WorldWideScience

Sample records for current-voltage iv characteristics

  1. Current-Voltage Characteristics of Quasi-One-Dimensional Superconductors

    DEFF Research Database (Denmark)

    Vodolazov, D.Y.; Peeters, F.M.; Piraux, L.

    2003-01-01

    The current-voltage (I-V) characteristics of quasi-one-dimensional superconductors were discussed. The I-V characteristics exhibited an unusual S behavior. The dynamics of superconducting condensate and the existence of two different critical currents resulted in such an unusual behavior....

  2. Room temperature current-voltage (I-V) characteristics of Ag/InGaN/n-Si Schottky barrier diode

    Energy Technology Data Exchange (ETDEWEB)

    Erdoğan, Erman, E-mail: e.erdogan@alparslan.edu.tr [Department of Physics, Faculty of Art and Science, Muş Alparslan University, Muş 49250 (Turkey); Kundakçı, Mutlu [Department of Physics, Faculty of Science, Atatürk University, Erzurum 25240 (Turkey)

    2017-02-01

    Metal-semiconductors (MSs) or Schottky barrier diodes (SBDs) have a significant potential in the integrated device technology. In the present paper, electrical characterization of Ag/InGaN/n-Si Schottky diode have been systematically carried out by simple Thermionic method (TE) and Norde function based on the I-V characteristics. Ag ohmic and schottky contacts are deposited on InGaN/n-Si film by thermal evaporation technique under a vacuum pressure of 1×10{sup −5} mbar. Ideality factor, barrier height and series resistance values of this diode are determined from I-V curve. These parameters are calculated by TE and Norde methods and findings are given in a comparetive manner. The results show the consistency for both method and also good agreement with other results obtained in the literature. The value of ideality factor and barrier height have been determined to be 2.84 and 0.78 eV at room temperature using simple TE method. The value of barrier height obtained with Norde method is calculated as 0.79 eV.

  3. Room temperature current-voltage (I-V) characteristics of Ag/InGaN/n-Si Schottky barrier diode

    Science.gov (United States)

    Erdoğan, Erman; Kundakçı, Mutlu

    2017-02-01

    Metal-semiconductors (MSs) or Schottky barrier diodes (SBDs) have a significant potential in the integrated device technology. In the present paper, electrical characterization of Ag/InGaN/n-Si Schottky diode have been systematically carried out by simple Thermionic method (TE) and Norde function based on the I-V characteristics. Ag ohmic and schottky contacts are deposited on InGaN/n-Si film by thermal evaporation technique under a vacuum pressure of 1×10-5 mbar. Ideality factor, barrier height and series resistance values of this diode are determined from I-V curve. These parameters are calculated by TE and Norde methods and findings are given in a comparetive manner. The results show the consistency for both method and also good agreement with other results obtained in the literature. The value of ideality factor and barrier height have been determined to be 2.84 and 0.78 eV at room temperature using simple TE method. The value of barrier height obtained with Norde method is calculated as 0.79 eV.

  4. Current-voltage characteristics of carbon nanotubes with substitutional nitrogen

    DEFF Research Database (Denmark)

    Kaun, C.C.; Larade, B.; Mehrez, H.

    2002-01-01

    unit cell generates a metallic transport behavior. Nonlinear I-V characteristics set in at high bias and a negative differential resistance region is observed for the doped tubes. These behaviors can be well understood from the alignment/mis-alignment of the current carrying bands in the nanotube leads......We report ab initio analysis of current-voltage (I-V) characteristics of carbon nanotubes with nitrogen substitution doping. For zigzag semiconducting tubes, doping with a single N impurity increases current flow and, for small radii tubes, narrows the current gap. Doping a N impurity per nanotube...

  5. Current-voltage characteristics of dendrimer light-emitting diodes

    International Nuclear Information System (INIS)

    Stevenson, S G; Samuel, I D W; Staton, S V; Knights, K A; Burn, P L; Williams, J H T; Walker, Alison B

    2010-01-01

    We have investigated current-voltage (I-V) characteristics of unipolar and bipolar organic diodes that use phosphorescent dendrimers as the emissive organic layer. Through simulation of the measured I-V characteristics we were able to determine the device parameters for each device structure studied, leading to a better understanding of injection and transport behaviour in these devices. It was found that the common practice of assuming injection barriers are equal to the difference between bare electrode work functions and molecular orbital levels is unsuitable for the devices considered here, particularly for gold contacts. The studies confirm that different aromatic units in the dendrons can give significant differences in the charge transporting properties of the dendrimers.

  6. Current-voltage characteristics of dendrimer light-emitting diodes

    Science.gov (United States)

    Stevenson, S. G.; Samuel, I. D. W.; Staton, S. V.; Knights, K. A.; Burn, P. L.; Williams, J. H. T.; Walker, Alison B.

    2010-09-01

    We have investigated current-voltage (I-V) characteristics of unipolar and bipolar organic diodes that use phosphorescent dendrimers as the emissive organic layer. Through simulation of the measured I-V characteristics we were able to determine the device parameters for each device structure studied, leading to a better understanding of injection and transport behaviour in these devices. It was found that the common practice of assuming injection barriers are equal to the difference between bare electrode work functions and molecular orbital levels is unsuitable for the devices considered here, particularly for gold contacts. The studies confirm that different aromatic units in the dendrons can give significant differences in the charge transporting properties of the dendrimers.

  7. Current-voltage characteristics of dendrimer light-emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Stevenson, S G; Samuel, I D W [Organic Semiconductor Centre, SUPA, School of Physics and Astronomy, University of St Andrews, North Haugh, St Andrews, Fife, KY16 9SS (United Kingdom); Staton, S V; Knights, K A; Burn, P L [Department of Chemistry, Chemistry Research Laboratory, 12 Mansfield Road, Oxford, OX1 3TA (United Kingdom); Williams, J H T; Walker, Alison B, E-mail: a.b.walker@bath.ac.u [Department of Physics, University of Bath, Bath, BA2 7AY (United Kingdom)

    2010-09-29

    We have investigated current-voltage (I-V) characteristics of unipolar and bipolar organic diodes that use phosphorescent dendrimers as the emissive organic layer. Through simulation of the measured I-V characteristics we were able to determine the device parameters for each device structure studied, leading to a better understanding of injection and transport behaviour in these devices. It was found that the common practice of assuming injection barriers are equal to the difference between bare electrode work functions and molecular orbital levels is unsuitable for the devices considered here, particularly for gold contacts. The studies confirm that different aromatic units in the dendrons can give significant differences in the charge transporting properties of the dendrimers.

  8. {sup 60}Co {gamma} irradiation effects on the current-voltage (I-V) characteristics of Al/SiO{sub 2}/p-Si (MIS) Schottky diodes

    Energy Technology Data Exchange (ETDEWEB)

    Tataroglu, A. [Department of Physics, Faculty of Arts and Sciences, Gazi University 06500, Ankara (Turkey)]. E-mail: ademt@gazi.edu.tr; Altindal, S. [Department of Physics, Faculty of Arts and Sciences, Gazi University 06500, Ankara (Turkey); Buelbuel, M.M. [Department of Physics, Faculty of Arts and Sciences, Gazi University 06500, Ankara (Turkey)

    2006-12-01

    It is well known that the exposure of any semiconductor surfaces to the {sup 60}Co {gamma}-ray irradiation causes electrically active defects. To investigate the effect of {gamma}-ray irradiation dose on the electrical characteristics of metal-insulator-semiconductor (MIS) Schottky diodes, the fabricated devices were exposed to {gamma} radiation at a dose of 2.12 kGy/h. The total dose range was from 0 to 450 kGy at room temperature. The density of interface states N {sub ss} as a function of E {sub ss}-E {sub v}, the values of series resistance R {sub s} and the bias dependence of the effective barrier height {phi} {sub e} for each dose were obtained from the forward bias I-V characteristics. Experimental results show that the {gamma}-irradiation gives rise to an increase in the zero bias barrier height {phi} {sub BO}, as the ideality factor n, R {sub s} and N {sub ss} decreases with increasing radiation dose.

  9. Current voltage characteristics of composite superconductors with high contact resistance

    International Nuclear Information System (INIS)

    Akhmetov, A.A.; Baev, V.P.

    1984-01-01

    An experimental study has been made of current-voltage characteristics of composite superconductors with contact resistance between superconducting filaments and normal metal with high electrical conductivity. It is shown that stable resistive states exist in such conductors over a wide range of currents. The presence of resistive states is interpreted in terms of the resistive domain concept. The minimum and maximum currents of resistive states are found to be dependent on the electrical resistance of normal metal and magnetic field. (author)

  10. Branching in current-voltage characteristics of intrinsic Josephson junctions

    International Nuclear Information System (INIS)

    Shukrinov, Yu M; Mahfouzi, F

    2007-01-01

    We study branching in the current-voltage characteristics of the intrinsic Josephson junctions of high-temperature superconductors in the framework of the capacitively coupled Josephson junction model with diffusion current. A system of dynamical equations for the gauge-invariant phase differences between superconducting layers for a stack of ten intrinsic junctions has been numerically solved. We have obtained a total branch structure in the current-voltage characteristics. We demonstrate the existence of a 'breakpoint region' on the current-voltage characteristics and explain it as a result of resonance between Josephson and plasma oscillations. The effect of the boundary conditions is investigated. The existence of two outermost branches and correspondingly two breakpoint regions for the periodic boundary conditions is shown. One branch, which is observed only at periodic boundary conditions, corresponds to the propagating of the plasma mode. The second one corresponds to the situation when the charge oscillations on the superconducting layers are absent, excluding the breakpoint. A time dependence of the charge oscillations at breakpoints is presented

  11. Current-Voltage Characteristic of Nanosecond - Duration Relativistic Electron Beam

    Science.gov (United States)

    Andreev, Andrey

    2005-10-01

    The pulsed electron-beam accelerator SINUS-6 was used to measure current-voltage characteristic of nanosecond-duration thin annular relativistic electron beam accelerated in vacuum along axis of a smooth uniform metal tube immersed into strong axial magnetic field. Results of these measurements as well as results of computer simulations performed using 3D MAGIC code show that the electron-beam current dependence on the accelerating voltage at the front of the nanosecond-duration pulse is different from the analogical dependence at the flat part of the pulse. In the steady-state (flat) part of the pulse), the measured electron-beam current is close to Fedosov current [1], which is governed by the conservation law of an electron moment flow for any constant voltage. In the non steady-state part (front) of the pulse, the electron-beam current is higher that the appropriate, for a giving voltage, steady-state (Fedosov) current. [1] A. I. Fedosov, E. A. Litvinov, S. Ya. Belomytsev, and S. P. Bugaev, ``Characteristics of electron beam formed in diodes with magnetic insulation,'' Soviet Physics Journal (A translation of Izvestiya VUZ. Fizika), vol. 20, no. 10, October 1977 (April 20, 1978), pp.1367-1368.

  12. Current-voltage-temperature characteristics of DNA origami

    Energy Technology Data Exchange (ETDEWEB)

    Bellido, Edson P; Bobadilla, Alfredo D; Rangel, Norma L; Seminario, Jorge M [Department of Chemical Engineering, Texas A and M University, College Station, TX 77843 (United States); Zhong Hong; Norton, Michael L [Department of Chemistry, Marshall University, Huntington, WV 25755 (United States); Sinitskii, Alexander [Department of Chemistry, Rice University, Houston, TX 77005 (United States)

    2009-04-29

    The temperature dependences of the current-voltage characteristics of a sample of triangular DNA origami deposited in a 100 nm gap between platinum electrodes are measured using a probe station. Below 240 K, the sample shows high impedance, similar to that of the substrate. Near room temperature the current shows exponential behavior with respect to the inverse of temperature. Sweep times of 1 s do not yield a steady state; however sweep times of 450 s for the bias voltage secure a steady state. The thermionic emission and hopping conduction models yield similar barriers of {approx}0.7 eV at low voltages. For high voltages, the hopping conduction mechanism yields a barrier of 0.9 eV and the thermionic emission yields 1.1 eV. The experimental data set suggests that the dominant conduction mechanism is hopping in the range 280-320 K. The results are consistent with theoretical and experimental estimates of the barrier for related molecules.

  13. Current-voltage-temperature characteristics of DNA origami

    International Nuclear Information System (INIS)

    Bellido, Edson P; Bobadilla, Alfredo D; Rangel, Norma L; Seminario, Jorge M; Zhong Hong; Norton, Michael L; Sinitskii, Alexander

    2009-01-01

    The temperature dependences of the current-voltage characteristics of a sample of triangular DNA origami deposited in a 100 nm gap between platinum electrodes are measured using a probe station. Below 240 K, the sample shows high impedance, similar to that of the substrate. Near room temperature the current shows exponential behavior with respect to the inverse of temperature. Sweep times of 1 s do not yield a steady state; however sweep times of 450 s for the bias voltage secure a steady state. The thermionic emission and hopping conduction models yield similar barriers of ∼0.7 eV at low voltages. For high voltages, the hopping conduction mechanism yields a barrier of 0.9 eV and the thermionic emission yields 1.1 eV. The experimental data set suggests that the dominant conduction mechanism is hopping in the range 280-320 K. The results are consistent with theoretical and experimental estimates of the barrier for related molecules.

  14. Current-voltage characteristics of porous-silicon structures

    International Nuclear Information System (INIS)

    Diligenti, A.; Nannini, A.; Pennelli, G.; Pieri, F.; Fuso, F.; Allegrini, M.

    1996-01-01

    I-V DC characteristics have been measured on metal/porous-silicon structures. In particular, the measurements on metal/free-standing porous-silicon film/metal devices confirmed the result, already obtained, that the metal/porous-silicon interface plays a crucial role in the transport of any device. Four-contacts measurements on free-standing layers showed that the current linearly depends on the voltage and that the conduction process is thermally activated, the activation energy depending on the porous silicon film production parameters. Finally, annealing experiments performed in order to improve the conduction of rectifying contacts, are described

  15. Investigation of the double exponential in the current-voltage characteristics of silicon solar cells

    Science.gov (United States)

    Wolf, M.; Noel, G. T.; Stirn, R. J.

    1976-01-01

    A theoretical analysis is presented of certain peculiarities of the current-voltage characteristics of silicon solar cells, involving high values of the empirical constant A in the diode equation for a p-n junction. An attempt was made in a lab experiment to demonstrate that the saturation current which is associated with the exponential term qV/A2kT of the I-V characteristic, with A2 roughly equal to 2, originates in the space charge region and that it can be increased, as observed on ATS-1 cells, by the introduction of additional defects through low energy proton irradiation. It was shown that the proton irradiation introduces defects into the space charge region which give rise to a recombination current from this region, although the I-V characteristic is, in this case, dominated by an exponential term which has A = 1.

  16. Exploring dark current voltage characteristics of micromorph silicon tandem cells with computer simulations

    NARCIS (Netherlands)

    Sturiale, A.; Li, H. B. T.; Rath, J.K.; Schropp, R.E.I.; Rubinelli, F.A.

    2009-01-01

    The transport mechanisms controlling the forward dark current-voltage characteristic of the silicon micromorph tandem solar cell were investigated with numerical modeling techniques. The dark current-voltage characteristics of the micromorph tandem structure at forward voltages show three regions:

  17. Fault identification in crystalline silicon PV modules by complementary analysis of the light and dark current-voltage characteristics

    DEFF Research Database (Denmark)

    Spataru, Sergiu; Sera, Dezso; Hacke, Peter

    2016-01-01

    This article proposes a fault identification method, based on the complementary analysis of the light and dark current-voltage (I-V) characteristics of the photovoltaic (PV) module, to distinguish between four important degradation modes that lead to power loss in PV modules: (a) degradation of t...

  18. Current-voltage characteristic of a resonant tunneling diode under electromagnetic radiation

    Directory of Open Access Journals (Sweden)

    N Hatefi Kargan

    2013-09-01

    Full Text Available  In this paper, current-voltage characteristic of a resonant tunneling diode under electromagnetic radiation has been calculated and compared with the results when there is no electromagnetic radiation. For calculating current -voltage characteristic, it is required to calculate the transmission coefficient of electrons from the well and barrier structures of this device. For calculating the transmission coefficient of electrons at the presence of electromagnetic radiation, Finite Difference Time Domain (FDTD method has been used and when there is no electromagnetic radiation Transfer Matrix Method (TMM and finite diffirence time domain method have been used. The results show that the presence of electromagnetic radiation causes resonant states other than principal resonant state (without presence of electromagnetic radiation to appear on the transmition coefficient curve where they are in distances from the principal peak and from each other. Also, the presence of electromagnetic radiation causes peaks other than principal peak to appear on the current-voltage characteristics of the device. Under electromagnetic radiation, the number of peaks on the current-voltage curve is smaller than the number of peaks on the current-voltage transmission coefficient. This is due to the fact that current-voltage curve is the result of integration on the energy of electrons, Thus, the sharper and low height peaks on the transmission coefficient do not appear on the current-voltage characteristic curve.

  19. Current-voltage temperature characteristics of Au/n-Ge (1 0 0) Schottky diodes

    Energy Technology Data Exchange (ETDEWEB)

    Chawanda, Albert, E-mail: albert.chawanda@up.ac.za [Midlands State University, Bag 9055 Gweru (Zimbabwe); University of Pretoria, 0002 Pretoria (South Africa); Mtangi, Wilbert; Auret, Francois D; Nel, Jacqueline [University of Pretoria, 0002 Pretoria (South Africa); Nyamhere, Cloud [Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Diale, Mmantsae [University of Pretoria, 0002 Pretoria (South Africa)

    2012-05-15

    The variation in electrical characteristics of Au/n-Ge (1 0 0) Schottky contacts have been systematically investigated as a function of temperature using current-voltage (I-V) measurements in the temperature range 140-300 K. The I-V characteristics of the diodes indicate very strong temperature dependence. While the ideality factor n decreases, the zero-bias Schottky barrier height (SBH) ({Phi}{sub B}) increases with the increasing temperature. The I-V characteristics are analyzed using the thermionic emission (TE) model and the assumption of a Gaussian distribution of the barrier heights due to barrier inhomogeneities at the metal-semiconductor interface. The zero-bias barrier height {Phi}{sub B} vs. 1/2 kT plot has been used to show the evidence of a Gaussian distribution of barrier heights and values of {Phi}{sub B}=0.615 eV and standard deviation {sigma}{sub s0}=0.0858 eV for the mean barrier height and zero-bias standard deviation have been obtained from this plot, respectively. The Richardson constant and the mean barrier height from the modified Richardson plot were obtained as 1.37 A cm{sup -2} K{sup -2} and 0.639 eV, respectively. This Richardson constant is much smaller than the reported of 50 A cm{sup -2} K{sup -2}. This may be due to greater inhomogeneities at the interface.

  20. Classification of methods for measuring current-voltage characteristics of semiconductor devices

    Directory of Open Access Journals (Sweden)

    Iermolenko Ia. O.

    2014-06-01

    Full Text Available It is shown that computer systems for measuring current-voltage characteristics are very important for semiconductor devices production. The main criteria of efficiency of such systems are defined. It is shown that efficiency of such systems significantly depends on the methods for measuring current-voltage characteristics of semiconductor devices. The aim of this work is to analyze existing methods for measuring current-voltage characteristics of semiconductor devices and to create the classification of these methods in order to specify the most effective solutions in terms of defined criteria. To achieve this aim, the most common classifications of methods for measuring current-voltage characteristics of semiconductor devices and their main disadvantages are considered. Automated and manual, continuous, pulse, mixed, isothermal and isodynamic methods for measuring current-voltage characteristics are analyzed. As a result of the analysis and generalization of existing methods the next classification criteria are defined: the level of automation, the form of measurement signals, the condition of semiconductor device during the measurements, and the use of mathematical processing of the measurement results. With the use of these criteria the classification scheme of methods for measuring current-voltage characteristics of semiconductor devices is composed and the most effective methods are specified.

  1. Morphology and current-voltage characteristics of nanostructured pentacene thin films probed by atomic force microscopy.

    Science.gov (United States)

    Zorba, S; Le, Q T; Watkins, N J; Yan, L; Gao, Y

    2001-09-01

    Atomic force microscopy was used to study the growth modes (on SiO2, MoS2, and Au substrates) and the current-voltage (I-V) characteristics of organic semiconductor pentacene. Pentacene films grow on SiO2 substrate in a layer-by-layer manner with full coverage at an average thickness of 20 A and have the highest degree of molecular ordering with large dendritic grains among the pentacene films deposited on the three different substrates. Films grown on MoS2 substrate reveal two different growth modes, snowflake-like growth and granular growth, both of which seem to compete with each other. On the other hand, films deposited on Au substrate show granular structure for thinner coverages (no crystal structure) and dendritic growth for higher coverages (crystal structure). I-V measurements were performed with a platinum tip on a pentacene film deposited on a Au substrate. The I-V curves on pentacene film reveal symmetric tunneling type character. The field dependence of the current indicates that the main transport mechanism at high field intensities is hopping (Poole-Frenkel effect). From these measurements, we have estimated a field lowering coefficient of 9.77 x 10(-6) V-1/2 m1/2 and an ideality factor of 18 for pentacene.

  2. Analysis of the current-voltage characteristics lineshapes of resonant tunneling diodes

    International Nuclear Information System (INIS)

    Rivera, P.H.; Schulz, P.A.

    1996-01-01

    It is discussed the influence of a two dimensional electron gas at the emitter-barrier interface on the current-voltage characteristics of a Ga As-Al Ga As double-barrier quantum well resonant tunneling diode. This effect is characterized by the modification of the space charge distribution along the structure. Within the framework of a self-consistent calculation we analyse the current-voltage characteristics of the tunneling diodes. This analysis permits us to infer different tunneling ways, related to the formation of confined states in the emitter region, and their signatures in the current-voltage characteristics. We show that varying the spacer layer, together with barrier heights, changes drastically the current density-voltage characteristics lineshapes. We compare our results with a variety of current-voltage characteristics lineshapes. We compare our results with a variety of current-voltage characteristics reported in the literature. The general trend of experimental lineshapes can be reproduced and interpreted with our model. The possibility of tunneling paths is predicted for a range that has not yet been explored experimentally. (author). 12 refs., 4 figs

  3. Ab initio and empirical studies on the asymmetry of molecular current-voltage characteristics

    International Nuclear Information System (INIS)

    Hoft, R C; Armstrong, N; Ford, M J; Cortie, M B

    2007-01-01

    We perform theoretical calculations of the tunnelling current through various small organic molecules sandwiched between gold electrodes by using both a tunnel barrier model and an ab initio transport code. The height of the tunnelling barrier is taken to be the work function of gold as modified by the adsorbed molecule and calculated from an ab initio electronic structure code. The current-voltage characteristics of these molecules are compared. Asymmetry is introduced into the system in two ways: an asymmetric molecule and a gap between the molecule and the right electrode. The latter is a realistic situation in scanning probe experiments. The asymmetry is also realized in the tunnel barrier model by two distinct work functions on the left and right electrodes. Significant asymmetry is observed in the ab initio i(V) curves. The tunnel barrier i(V) curves show much less pronounced asymmetry. The relative sizes of the currents through the molecules are compared. In addition, the performance of the WKB approximation is compared to the results obtained from the exact Schroedinger solution to the tunnelling barrier problem

  4. Hysteretic current-voltage characteristics in RF-sputtered nanocrystalline TiO2 thin films

    International Nuclear Information System (INIS)

    Villafuerte, Manuel; Juarez, Gabriel; Heluani, Silvia P. de; Comedi, David

    2007-01-01

    We have measured the current-voltage characteristics at room temperature of a nanocrystalline TiO 2 thin film fabricated by reactive RF-sputtering deposition and sandwiched between ITO (indium-tin-oxide)-buffered glass substrate and an indium top electrode. The I-V characteristics are ohmic for low voltages and become non-linear, hysteretic and asymmetric as the voltage is increased. The system is shown to be well represented by two distinct resistance states in the non-ohmic region. Current transient evolutions were also measured for constant voltage excitations. The resistance is stable in time for voltages in the ohmic regime. In contrast, for voltages in the non-ohmic regime, the resistance has a small variation for a short period of time (order of tens seconds) and then increases with time. For those transients, long characteristic times (on the order of tens of minutes up to hours) were found. The behavior of the system is discussed on the basis of experimental results reported in the literature for similar systems and existing models for electric-field induced resistive switching

  5. Current-voltage characteristics of bulk heterojunction organic solar cells: connection between light and dark curves

    Energy Technology Data Exchange (ETDEWEB)

    Boix, Pablo P.; Guerrero, Antonio; Garcia-Belmonte, Germa; Bisquert, Juan [Photovoltaic and Optoelectronic Devices Group, Departament de Fisica, Universitat Jaume I, ES-12071 Castello (Spain); Marchesi, Luis F. [Laboratorio Interdisciplinar de, Eletroquimica e Ceramica (LIEC), Universidade Federal de Sao Carlos (Brazil); Photovoltaic and Optoelectronic Devices Group, Departament de Fisica, Universitat Jaume I, ES-12071 Castello (Spain)

    2011-11-15

    A connection is established between recombination and series resistances extracted from impedance spectroscopy and current-voltage curves of polythiophene:fullerene organic solar cells. Recombination is shown to depend exclusively on the (Fermi level) voltage, which allows construction of the current-voltage characteristics in any required conditions based on a restricted set of measurements. The analysis highlights carrier recombination current as the determining mechanism of organic solar cell performance. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  6. Comment on: "Current-voltage characteristics and zero-resistance state in 2DEG"

    OpenAIRE

    Cheremisin, M. V.

    2003-01-01

    We demonstrate that N(S)-shape current-voltage characteristics proposed to explain zero-resistance state in Corbino(Hall bar) geometry 2DEG (cond-mat/0302063, cond-mat/0303530) cannot account essential features of radiation-induced magnetoresistance oscillations experiments.

  7. Current-voltage characteristic of parallel-plane ionization chamber with inhomogeneous ionization

    International Nuclear Information System (INIS)

    Stoyanov, D G

    2007-01-01

    The balances of particles and charges in the volume of parallel-plane ionization chamber are considered. Differential equations describing the distribution of current densities in the chamber volume are obtained. As a result of the differential equations solution an analytical form of the current-voltage characteristic of parallel-plane ionization chamber with inhomogeneous ionization in the volume is obtained

  8. Current-voltage characteristic of parallel-plane ionization chamber with inhomogeneous ionization

    Energy Technology Data Exchange (ETDEWEB)

    Stoyanov, D G [Faculty of Engineering and Pedagogy in Sliven, Technical University of Sofia, 59, Bourgasko Shaussee Blvd, 8800 Sliven (Bulgaria)

    2007-08-15

    The balances of particles and charges in the volume of parallel-plane ionization chamber are considered. Differential equations describing the distribution of current densities in the chamber volume are obtained. As a result of the differential equations solution an analytical form of the current-voltage characteristic of parallel-plane ionization chamber with inhomogeneous ionization in the volume is obtained.

  9. Current-Voltage Characteristics of the Metal / Organic Semiconductor / Metal Structures: Top and Bottom Contact Configuration Case

    Directory of Open Access Journals (Sweden)

    Šarūnas MEŠKINIS

    2013-03-01

    Full Text Available In present study five synthesized organic semiconductor compounds have been used for fabrication of the planar metal / organic semiconductor / metal structures. Both top electrode and bottom electrode configurations were used. Current-voltage (I-V characteristics of the samples were investigated. Effect of the hysteresis of the I-V characteristics was observed for all the investigated samples. However, strength of the hysteresis was dependent on the organic semiconductor used. Study of I-V characteristics of the top contact Al/AT-RB-1/Al structures revealed, that in (0 – 500 V voltages range average current of the samples measured in air is only slightly higher than current measured in nitrogen ambient. Deposition of the ultra-thin diamond like carbon interlayer resulted in both decrease of the hysteresis of I-V characteristics of top contact Al/AT-RB-1/Al samples. However, decreased current and decreased slope of the I-V characteristics of the samples with diamond like carbon interlayer was observed as well. I-V characteristic hysteresis effect was less pronounced in the case of the bottom contact metal/organic semiconductor/metal samples. I-V characteristics of the bottom contact samples were dependent on electrode metal used.DOI: http://dx.doi.org/10.5755/j01.ms.19.1.3816

  10. Special features of the current-voltage characteristics of short superconducting bridges

    International Nuclear Information System (INIS)

    Zhilinskii, S.; Latyshev, Y.; Nad', F.

    1981-01-01

    A study was made of variable-thickness superconducting bridges made of tin and indium. The current-voltage characteristics were determined for these bridges as a function of their length and width. The characteristics exhibited a linear region as well as an inflection. The temperature of the appearance of such an inflection depended on the length of the bridge but was independent of the bridge material

  11. Singularities of current-voltage characteristics of GaAs films fabricated by pulsed ions ablation

    International Nuclear Information System (INIS)

    Kabyshev, A.V.; Konusov, F.V.; Lozhnikov, S.N.; Remnev, G.E.; Saltymakov, M.S.

    2009-01-01

    A singularities and advantages of the optical, photoelectric and electrical properties of GaAs in comparison with other available materials for electronics, for example, silicon allow to manufacture on it base the devices having an advanced characteristics. The GaAs for electronics, obtained from the dense ablation plasma, possess some preferences as compared to material manufactured by traditional methods of vacuum deposition. The electrical characteristics of GaAs produced by chemical deposition were extensively studied. Purpose of this work is investigation the current-voltage characteristics of thin films of GaAs, deposited on polycrystalline corundum (polycor) from plasma forming the power ions bunch and determination of the thermal vacuum annealing effect on photoelectric and electrical properties of films. Peculiarities of optical, photoelectric and current-voltage characteristics of films obtained by ions ablation are determined by deposition conditions and resistance of initial target GaAs. The transitions between the states with low- and high conduction were revealed directly after deposition in films having the optical properties similar to amorphous materials and/or after annealing in films with properties similar to initial target GaAs. Behavior of current-voltage characteristics at vacuum annealing correlates with Schottky barrier height and photosensitivity and is accompanies of the transport mechanism change. The stable properties of films are formed at its dark conduction 10 -10 -10 -8 s and after annealing at T an =600-700 K. (authors)

  12. The dynamic current-voltage characteristic as a powerful tool to analyze fast phenomena in plasma

    International Nuclear Information System (INIS)

    Ivan, L. M.; Mihai-Plugaru, M.; Amarandei, G.; Aflori, M.; Dimitriu, D. G.

    2006-01-01

    The static current-voltage characteristic of an electrode immersed in plasma is obtained by slowly increasing and subsequently decreasing the potential on the electrode with respect to the plasma potential or the ground. This characteristic can give us important information about the phenomena that take place in front of the electrode. Current jumps can be evidenced which were often associated with an hysteresis effect, regions with S-type or N-type negative differential resistance, etc. The method is always used when we investigate the appearance of complex space charge configurations (CSCC) in front of an electrode immersed in plasma. However, to investigate the dynamics of such structures or other fast phenomena (like instabilities) which take place in plasma devices with frequencies of tenth, hundred kHz or more, complex investigation techniques must be used. One of the most efficient methods to investigate fast phenomena in plasma devices is the dynamic current-voltage characteristic. This is obtained by recording the time series of the current collected by the electrode when the voltage applied on it is very fast modified (most likely increased) by using a signal generator. In this way, very fast oscillations of the current can be recorded and new phenomena can be evidenced. We used this technique to study the phenomena which take place at the onset of electrostatic instabilities in Q-machine plasma, namely the potential relaxation instability (PRI) and the electrostatic ion-cyclotron instability (EICI). The obtained experimental results prove that the negative differential resistance region in the static current-voltage characteristic is the result of a nonlinear dynamics of a CSCC in form of a double layer (DL) which takes place just before the onset of the instabilities. In the case of the PRI we emphasized current jumps related with the DL appearance, which are not present in the static current-voltage characteristic at high plasma density. (authors)

  13. Study of current-voltage characteristics in PbTe(Ga) alloys at low temperatures

    International Nuclear Information System (INIS)

    Akimov, B.A.; Albul, A.V.; Bogdanov, E.V.

    1992-01-01

    Results of determining current-voltage characteristics in PbTe(Ga) monocrystals of n- and p-types of conductivity in strong electric fields E ≤ 2 x 10 3 V/Cm at 4.2-77 K are presented. It was established that at helium and nitrogen temperatures, the current-voltage characteristics of PbTe(Ga) alloys, high-ohmic state of which was realized in helium, differed qualitatively from ones, typical for unalloyed PbTe. The superlinear dependence, observed in the fields, beginning from E ≥ 1 V/cm, is explained in the framework of concepts of strong electric field effect on conductivity of impurity states

  14. Current-voltage characteristics of C70 solid near Meyer-Neldel temperature

    Science.gov (United States)

    Onishi, Koichi; Sezaimaru, Kouki; Nakashima, Fumihiro; Sun, Yong; Kirimoto, Kenta; Sakaino, Masamichi; Kanemitsu, Shigeru

    2017-06-01

    The current-voltage characteristics of the C70 solid with hexagonal closed-packed structures were measured in the temperature range of 250-450 K. The current-voltage characteristics can be described as a temporary expedient by a cubic polynomial of the voltage, i = a v 3 + b v 2 + c v + d . Moreover, the Meyer-Neldel temperature of the C70 solid was confirmed to be 310 K, at which a linear relationship between the current and voltage was observed. Also, at temperatures below the Meyer-Neldel temperature, the current increases with increasing voltage. On the other hand, at temperatures above the Meyer-Neldel temperature a negative differential conductivity effect was observed at high voltage side. The negative differential conductivity was related to the electric field and temperature effects on the mobility of charge carrier, which involve two variations in the carrier concentration and the activation energy for carrier hopping transport.

  15. A simple approximation for the current-voltage characteristics of high-power, relativistic diodes

    Energy Technology Data Exchange (ETDEWEB)

    Ekdahl, Carl, E-mail: cekdahl@lanl.gov [Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)

    2016-06-15

    A simple approximation for the current-voltage characteristics of a relativistic electron diode is presented. The approximation is accurate from non-relativistic through relativistic electron energies. Although it is empirically developed, it has many of the fundamental properties of the exact diode solutions. The approximation is simple enough to be remembered and worked on almost any pocket calculator, so it has proven to be quite useful on the laboratory floor.

  16. Hysteresis and negative differential resistance of the current-voltage characteristic of a water bridge

    Science.gov (United States)

    Oshurko, V. B.; Fedorov, A. N.; Ropyanoi, A. A.; Fedosov, M. V.

    2014-06-01

    It is found experimentally that the properties of nanoporous ion-exchange membranes (hysteresis of the current-voltage characteristic in the solution and negative differential resistance), which have been discussed in recent years, are not associated with the properties of the membrane. It is shown that these effects are also observed in a floating water bridge and in water-filled tubes and are apparently determined by the geometrical shape of the liquid conductor. The observed effects are explained qualitatively.

  17. Effect of electric and magnetic fields on current-voltage characteristics of a lyotropic liquid crystal

    International Nuclear Information System (INIS)

    Minasyants, M.Kh.; Badalyan, G. G.; Shahinian, A. A.

    1997-01-01

    The effect of electric and magnetic fields on current-voltage characteristics is studied for the lamellar phase in the lyotropic liquid-crystal sodium pentadecylsulfonate (SPDS)-water and lecithin-water systems. It has been found that the current-voltage characteristics of both systems have hysteresis. In the case of ionogenic SPDS, the hysteresis is formed due to ion current caused by the spatial reorientation of domains consisting of parallel lamellar fragments; in the case of lecithin, whose molecules contain dipoles, the hysteresis is formed due to the spatial reorientation of domains caused by the interaction of the resultant dipole moment of the domains with the electric field. It is shown that the introduction into lamellae of cetylpyridine bromide, which has an intrinsic magnetic moment, changes the resultant magnetic moment of domains and, thus, also the hysteresis loop of the current-voltage characteristic. The systems studied show the 'memory' effect with respect to both the electric and magnetic fields. Field-induced processes of domain reorientation were recorded by the method of small-angle x-ray scattering

  18. Current-voltage characteristics of carbon nanostructured field emitters in different power supply modes

    Science.gov (United States)

    Popov, E. O.; Kolosko, A. G.; Filippov, S. V.; Romanov, P. A.; Terukov, E. I.; Shchegolkov, A. V.; Tkachev, A. G.

    2017-12-01

    We received and compared the current-voltage characteristics of large-area field emitters based on nanocomposites with graphene and nanotubes. The characteristics were measured in two high voltage scanning modes: the "slow" and the "fast". Correlation between two types of hysteresis observed in these regimes was determined. Conditions for transition from "reverse" hysteresis to the "direct" one were experimentally defined. Analysis of the eight-shaped hysteresis was provided with calculation of the effective emission parameters. The phenomenological model of adsorption-desorption processes in the field emission system was proposed.

  19. Impurity Deionization Effects on Surface Recombination DC Current-Voltage Characteristics in MOS Transistors

    International Nuclear Information System (INIS)

    Chen Zuhui; Jie Binbin; Sah Chihtang

    2010-01-01

    Impurity deionization on the direct-current current-voltage characteristics from electron-hole recombination (R-DCIV) at SiO 2 /Si interface traps in MOS transistors is analyzed using the steady-state Shockley-Read-Hall recombination kinetics and the Fermi distributions for electrons and holes. Insignificant distortion is observed over 90% of the bell-shaped R-DCIV curves centered at their peaks when impurity deionization is excluded in the theory. This is due to negligible impurity deionization because of the much lower electron and hole concentrations at the interface than the impurity concentration in the 90% range. (invited papers)

  20. Current-voltage characteristic of a Josephson junction with randomly distributed Abrikosov vortices

    International Nuclear Information System (INIS)

    Fistul, M.V.; Giuliani, G.F.

    1997-01-01

    We have developed a theory of the current-voltage characteristic of a Josephson junction in the presence of randomly distributed, pinned misaligned Abrikosov vortices oriented perpendicularly to the junction plane. Under these conditions the Josephson phase difference var-phi acquires an interesting stochastic dependence on the position in the plane of the junction. In this situation it is possible to define an average critical current which is determined by the spatial correlations of this function. Due to the inhomogeneity, we find that for finite voltage bias the electromagnetic waves propagating in the junction display a broad spectrum of wavelengths. This is at variance with the situation encountered in homogeneous junctions. The amplitude of these modes is found to decrease as the bias is increased. We predict that the presence of these excitations is directly related to a remarkable feature in the current-voltage characteristic. The dependence of the position and the magnitude of this feature on the vortex concentration has been determined. copyright 1997 The American Physical Society

  1. Inhomogeneous barrier height effect on the current-voltage characteristics of an Au/n-InP Schottky diode

    Science.gov (United States)

    Zeghdar, Kamal; Dehimi, Lakhdar; Saadoune, Achour; Sengouga, Nouredine

    2015-12-01

    We report the current-voltage (I-V) characteristics of the Schottky diode (Au/n-InP) as a function of temperature. The SILVACO-TCAD numerical simulator is used to calculate the I-V characteristic in the temperature range of 280-400 K. This is to study the effect of temperature on the I-V curves and assess the main parameters that characterize the Schottky diode such as the ideality factor, the height of the barrier and the series resistance. The I-V characteristics are analyzed on the basis of standard thermionic emission (TE) theory and the inhomogeneous barrier heights (BHs) assuming a Gaussian distribution. It is shown that the ideality factor decreases while the barrier height increases with increasing temperature, on the basis of TE theory. Furthermore, the homogeneous BH value of approximately 0.524 eV for the device has been obtained from the linear relationship between the temperature-dependent experimentally effective BHs and ideality factors. The modified Richardson plot, according to the inhomogeneity of the BHs, has a good linearity over the temperature range. The evaluated Richardson constant A* was 10.32 A·cm-2·K-2, which is close to the theoretical value of 9.4 A·cm-2·K-2 for n-InP. The temperature dependence of the I-V characteristics of the Au/n-InP Schottky diode have been successfully explained on the basis of the thermionic emission (TE) mechanism with a Gaussian distribution of the Schottky barrier heights (SBHs). Simulated I-V characteristics are in good agreement with the measurements [Korucu D, Mammadov T S. J Optoelectronics Advanced Materials, 2012, 14: 41]. The barrier height obtained using Gaussian Schottky barrier distribution is 0.52 eV, which is about half the band gap of InP.

  2. Effect of localized states on the current-voltage characteristics of metal-semiconductor contacts with thin interfacial layer

    Science.gov (United States)

    Chattopadhyay, P.

    1994-10-01

    The role of discrete localized states on the current-voltage characteristics of metal-semiconductor contact is examined. It is seen that, because of these localized states, the logarithmic current vs voltage characteristics become nonlinear. Such nonlinearity is found sensitive to the temperature, and the energy and density of the localized states. The predicted temperature dependence of barrier height and the current-voltage characteristics are in agreement with the experimental results of Aboelfotoh [ Phys. Rev. B39, 5070 (1989)].

  3. Influence of coupling parameter on current-voltage characteristics of intrinsic Josephson junctions in high-T c superconductors

    International Nuclear Information System (INIS)

    Shukrinov, Yu.M.; Mahfouzi, F.

    2006-01-01

    We study the current-voltage characteristics of intrinsic Josephson junctions in high-T c superconductors by numerical calculations and in framework of capacitively coupled Josephson junctions model we obtain the total number of branches. The influence of the coupling parameter α on the current-voltage characteristics at fixed parameter β (β 2 1/β c , where β c is McCumber parameter) and the influence of α on β-dependence of the current-voltage characteristics are investigated. We obtain the α-dependence of the branch's slopes and branch's endpoints. The presented results show new features of the coupling effect on the scheme of hysteresis jumps in current-voltage characteristics of intrinsic Josephson junctions in high-T c superconductors

  4. The Effect of Image Potential on the Current-Voltage Characteristics of a Ferritin-layer

    Directory of Open Access Journals (Sweden)

    Eunjung Bang

    2010-11-01

    Full Text Available Considering for the concept of power storage systems, such as those used to supply power to microelectronic devices, ferritins have aroused a lot of interests for applications in bioelectrochemical devices. And electron transfer rates from the proteins to electrode surface are key determinants of overall performance and efficiency of the ferritin-based devices. Here we have investigated the electron transport mechanism of ferritin layer which was immobilized on an Au electrode. The current-voltage (I-V curves are obtained by a conductive atomic force microscope (c-AFM as a function of contact area between AFM tip and the ferritin layer. In the low voltage region, I-V curves are affected by both Fowler-Nordheim tunneling and image force. On the other hand, the experimental results are consistent with a Simmons model in a high voltage region, indicating that, as the voltage increases, the image potential has a dominant effect on the electron transport mechanism. These results are attributed to the film-like character of the ferritin layer, which generates an image potential to lower the barrier height in proportion to the voltage increment.

  5. Simulation of forward dark current voltage characteristics of tandem solar cells

    International Nuclear Information System (INIS)

    Rubinelli, F.A.

    2012-01-01

    The transport mechanisms tailoring the shape of dark current–voltage characteristics of amorphous and microcrystalline silicon based tandem solar cell structures are explored with numerical simulations. Our input parameters were calibrated by fitting experimental current voltage curves of single and double junction structures measured under dark and illuminated conditions. At low and intermediate forward voltages the dark current–voltage characteristics show one or two regions with a current–voltage exponential dependence. The diode factor is unique in tandem cells with the same material in both intrinsic layers and two dissimilar diode factors are observed in tandem cells with different materials on the top and bottom intrinsic layers. In the exponential regions the current is controlled by recombination through gap states and by free carrier diffusion. At high forward voltages the current grows more slowly with the applied voltage. The current is influenced by the onset of electron space charge limited current (SCLC) in tandem cells where both intrinsic layers are of amorphous silicon and by series resistance of the bottom cell in tandem cells where both intrinsic layers are of microcrystalline silicon. In the micromorph cell the onset of SCLC becomes visible on the amorphous top sub-cell. The dark current also depends on the thermal generation of electron–hole (e–h) pairs present at the tunneling recombination junction. The highest dependence is observed in the tandem structure where both intrinsic layers are of microcrystalline silicon. The prediction of meaningless dark currents at low forward and reverse voltages by our code is discussed and one solution is given. - Highlights: ► Transport mechanisms shaping the dark current-voltage curves of tandem devices. ► The devices are amorphous and microcrystalline based tandem solar cells. ► Two regions with a current-voltage exponential dependence are observed. ► The tandem J-V diode factor is the

  6. Current-Voltage Characteristics of DC Discharge in Micro Gas Jet Injected into Vacuum Environment

    International Nuclear Information System (INIS)

    Matra, K; Furuta, H; Hatta, A

    2013-01-01

    A current-voltage characteristic of direct current (DC) gas discharge operated in a micro gas jet injected into a secondary electron microscope (SEM) chamber is presented. Ar gas was injected through a 30 μm orifice gas nozzle (OGN) and was evacuated by an additional pump to keep the high vacuum environment. Gas discharges were ignited between the OGN as anode and a counter electrode of Si wafer. The discharge was self-pulsating in most of the cases while it was stable at lower pressure, larger gap length, and larger time averaged current. The self-pulsating discharge was oscillated by the RC circuit consisting of a stray capacitor and a large ballast resistor. The real time plots of voltage and current during the pulsating was investigated using a discharge model.

  7. Calculation of current-voltage characteristics of electron-capture detectors

    International Nuclear Information System (INIS)

    Hinneburg, D.; Grosse, H.J.; Leonhardt, J.; Popp, P.

    1983-01-01

    Starting from the law of conservation of charge a stationary one-dimensional non-linear differential equation system is derived, which is applied to the direct-current mode of an electron-capture detector with parallel electrode plates. The theory takes into account space-charge, recombination, and inhomogeneous ionization and it deals with three kinds of charge carriers with different mobilities (positive and negative ions, electrons). Terms due to diffusion and gas-flow losses are excluded. The equations so constructed were programmed to get a means of calculating the charge and field distributions and the current-voltage characteristics as functions of various parameters of the detectors, the attaching gas and the ionization. For two cases the results are given. (author)

  8. Nonlinear current-voltage characteristics of WO3-x nano-/micro-rods

    Science.gov (United States)

    Shen, Zhenguang; Peng, Zhijian; Zhao, Zengying; Fu, Xiuli

    2018-04-01

    A series of crystalline tungsten oxide nano-/micro-rods with different compositions of WO3, WO2.90, W19O55 (WO2.89) and W18O49 (WO2.72) but identical morphology feature were first prepared. Then, various nanoscaled electrical devices were fabricated from them by micro-fabrication through a focused ion beam technique. Interestingly, the devices from the oxygen-deficient WO3-x display significantly nonlinear current-voltage characteristics. The calculated nonlinear coefficients of the WO2.90, WO2.83, and WO2.72 varistors are 2.52, 3.32 and 4.91, respectively. The breakdown voltage of the WO2.90, WO2.83, and WO2.72 varistors are 1.93, 1.28 and 0.93 V, respectively. Such WO3-x nano-varistors might be promising for low-voltage electrical/electronic devices.

  9. Autowaves in an active two-wire line with exponential current-voltage characteristics

    International Nuclear Information System (INIS)

    Zhuravlev, V. M.

    2006-01-01

    Nonlinear wave processes in two-wire lines containing an active element with an exponential current-voltage characteristic (CVC) similar to that of a p-n junction are investigated. These lines are models of systems that are encountered in various physical and biological applications, such as biological membranes and semiconductor devices. It is shown that such systems may operate in different modes each of which has different dispersion and dissipation properties and, as a consequence, is described by autowave processes of different types. The behavior of a system in all basic modes is analyzed. For each mode, exact solutions to relevant equations are found and their differential conservation laws and intrinsic symmetries are investigated. One of common properties of such equations is the presence of a special superposition principle that describes the discrete structure of excitations in a line that consist of individual elementary excitations. It is shown that autopulses may be generated in such systems

  10. Current-Voltage Characteristics of the Composites Based on Epoxy Resin and Carbon Nanotubes

    Directory of Open Access Journals (Sweden)

    Iwona Pełech

    2015-01-01

    Full Text Available Polymer composites based on epoxy resin were prepared. Multiwalled carbon nanotubes synthesized on iron-cobalt catalyst were applied as a filler in a polymer matrix. Chlorine or hydroxyl groups were incorporated on the carbon nanotubes surface via chlorination or chlorination followed by hydroxylation. The effect of functionalized carbon nanotubes on the epoxy resin matrix is discussed in terms of the state of CNTs dispersion in composites as well as electrical properties. For the obtained materials current-voltage characteristics were determined. They had a nonlinear character and were well described by an exponential-type equation. For all the obtained materials the percolation threshold occurred at a concentration of about 1 wt%. At a higher filler concentration >2 wt%, better conductivity was demonstrated by polymer composites with raw carbon nanotubes. At a lower filler concentration <2 wt%, higher values of electrical conductivity were obtained for polymer composites with modified carbon nanotubes.

  11. Fault identification in crystalline silicon PV modules by complementary analysis of the light and dark current-voltage characteristics

    DEFF Research Database (Denmark)

    Spataru, Sergiu; Sera, Dezso; Hacke, Peter

    2014-01-01

    Photovoltaic system (PV) maintenance and diagnostic tools are often based on performance models of the system, complemented with light current-voltage (I-V) measurements, visual inspection and/or thermal imaging. Although these are invaluable tools in diagnosing PV system performance losses and f...

  12. Tunneling effects in the current-voltage characteristics of high-efficiency GaAs solar cells

    Science.gov (United States)

    Kachare, R.; Anspaugh, B. E.; Garlick, G. F. J.

    1988-01-01

    Evidence is that tunneling via states in the forbidden gap is the dominant source of excess current in the dark current-voltage (I-V) characteristics of high-efficiency DMCVD grown Al(x)Ga(1-x)As/GaAs(x is equal to or greater than 0.85) solar cells. The dark forward and reverse I-V measurements were made on several solar cells, for the first time, at temperatures between 193 and 301 K. Low-voltage reverse-bias I-V data of a number of cells give a thermal activation energy for excess current of 0.026 + or - 0.005 eV, which corresponds to the carbon impurity in GaAs. However, other energy levels between 0.02 eV and 0.04 eV were observed in some cells which may correspond to impurity levels introduced by Cu, Si, Ge, or Cd. The forward-bias excess current is mainly due to carrier tunneling between localized levels created in the space-charge layer by impurities such as carbon, which are incorporated during the solar cell growth process. A model is suggested to explain the results.

  13. Comment on 'Temperature dependence of the current-voltage characteristics of Sn/PANI/p-Si/Al heterojunctions'

    Energy Technology Data Exchange (ETDEWEB)

    Pipinys, P; Rimeika, A [Department of Physics, Vilnius Pedagogical University, Studentu 39, LT-08106 Vilnius (Lithuania)], E-mail: ftfdekanas@vpu.lt

    2008-02-27

    Current-voltage characteristics of Sn/PANI/p-Si/Al heterojunctions, measured in the temperature range 140-280 K by Kaya et al (2007 J. Phys.: Condens. Matter 19 406205), are reinterpreted in the framework of phonon-assisted tunnelling theory, as a free-charge-carrier generation mechanism in the strong electrical field. It is shown that phonon-assisted tunnelling more adequately describes the peculiarities of the variation of I-V data with temperature in PANI polymers. (comment)

  14. Current-voltage characteristics of individual conducting polymer nanotubes and nanowires

    Institute of Scientific and Technical Information of China (English)

    Long Yun-ze; Yin Zhi-Hua; Li Meng-Meng; Gu Chang-Zhi; Duvail Jean-Luc; Jin Ai-zi; Wan Mei-xiang

    2009-01-01

    We report the current-voltage (Ⅰ-Ⅴ) characteristics of individual polypyrrole nanotubes and poly(3,4-ethylenedioxythiophene) (PEDOT) nanowires in a temperature range from 300 K to 2 K. Considering the complex structures of such quasi-one-dimensional systems with an array of ordered conductive regions separated by disordered barriers, we use the extended fluctuation-induced tunneling (FIT) and thermal excitation model (Kaiser expression) to fit the temperature and electric-field dependent Ⅰ-Ⅴ curves. It is found that the Ⅰ-Ⅴ data measured at higher temperatures or higher voltages can be well fitted by the Kaiser expression. However, the low-temperature data around the zero bias clearly deviate from those obtained from this model. The deviation (or zero-bias conductance suppression)could be possibly ascribed to the occurrence of the Coulomb-gap in the density of states near the Femi level and/or the enhancement of electron-electron interaction resulting from nanosize effects, which have been revealed in the previous studies on low-temperature electronic transport in conducting polymer films, pellets and nanostructures. In addition,similar Ⅰ-Ⅴ characteristics and deviation are also observed in an isolated K0.27MnO2 nanowire.

  15. Features of current-voltage characteristic of nonequilibrium trench MOS barrier Schottky diode

    Science.gov (United States)

    Mamedov, R. K.; Aslanova, A. R.

    2018-06-01

    The trench MOS barrier Schottky diodes (TMBS diode) under the influence of the voltage drop of the additional electric field (AEF) appearing in the near-contact region of the semiconductor are in a nonequilibrium state and their closed external circuit flows currents in the absence of an external voltage. When an external voltage is applied to the TMBS diode, the current transmission is described by the thermionic emission theory with a specific feature. Both forward and reverse I-V characteristics of the TMBS diode consist of two parts. In the initial first part of the forward I-V characteristic there are no forward currents, but reverse saturation currents flow, in its subsequent second part the currents increase exponentially with the voltage. In the initial first part of the reverse I-V characteristic, the currents increase in an abrupt way and in the subsequent second part the saturation currents flow under the action of the image force. The mathematical expressions for forward and reverse I-V characteristic of the TMBS diode and also narrow or nanostructure Schottky diode are proposed, which are in good agreement with the results of experimental and calculated I-V characteristics.

  16. Observation of dark pulses in 10 nm thick YBCO nanostrips presenting hysteretic current voltage characteristics

    Science.gov (United States)

    Ejrnaes, M.; Parlato, L.; Arpaia, R.; Bauch, T.; Lombardi, F.; Cristiano, R.; Tafuri, F.; Pepe, G. P.

    2017-12-01

    We have fabricated several 10 nm thick and 65 nm wide YBa2Cu3O7-δ (YBCO) nanostrips. The nanostrips with the highest critical current densities are characterized by hysteretic current voltage characteristics (IVCs) with a direct bistable switch from the zero-voltage to the finite voltage state. The presence of hysteretic IVCs allowed the observation of dark pulses due to fluctuations phenomena. The key role of the bistable behavior is its ability to transform a small disturbance (e.g. an intrinsic fluctuation) into a measurable transient signal, i.e. a dark pulse. On the contrary, in devices characterized by lower critical current density values, the IVCs are non-hysteretic and dark pulses have not been observed. To investigate the physical origin of the dark pulses, we have measured the bias current dependence of the dark pulse rate: the observed exponential increase with the bias current is compatible with mechanisms based on thermal activation of magnetic vortices in the nanostrip. We believe that the successful amplification of small fluctuation events into measurable signals in nanostrips of ultrathin YBCO is a milestone for further investigation of YBCO nanostrips for superconducting nanostrip single photon detectors and other quantum detectors for operation at higher temperatures.

  17. Current-voltage characteristics of a superconducting slab under a superimposed small AC magnetic field

    International Nuclear Information System (INIS)

    Matsushita, Teruo; Yamafuji, Kaoru; Sakamoto, Nobuyoshi.

    1977-01-01

    In case of applying superconductors to electric machinery or high intensity field magnets for fusion reactors, the superconductors are generally expected to be sensible to small field fluctuation besides DC magnetic field. The behavior of superconductors in DC magnetic field superimposed with small AC magnetic field has been investigated often experimentally, and the result has been obtained that the critical current at which DC flow voltage begins to appear extremely decreased or disappeared. Some theoretical investigations have been carried out on this phenomenon so far, however, their application has been limited to the region where frequency is sufficiently low or which is close to the critical magnetic field. Purpose of this report is to deal with the phenomenon in more unified way by analyzing the behavior of magnetic flux lines in a superconductor under a superimposed small AC field using the criticalstate model including viscous force. In order to solve the fundamental equation in this report, first the solution has been obtained in the quasi-static state neglecting viscous force, then about the cases that current density J is not more than Jc and J is larger than Jc, concerning the deviation from the quasi-static limit by employing successive approximation. Current-voltage characteristics have been determined by utilizing the above results. This method seems to be most promising at present except the case of extremely high frequency. (Wakatsuki, Y.)

  18. Current-Voltage Characteristics of Nb2O5 nanoporous via light illumination

    Science.gov (United States)

    Samihah Khairir, Nur; Rani, Rozina Abdul; Fazlida Hanim Abdullah, Wan; Hafiz Mamat, Mohamad; Kadir, Rosmalini Abdul; Rusop, M.; Sabirin Zoolfakar, Ahmad

    2018-03-01

    This work discussed the effect of light on I-V characteristics of anodized niobium pentoxide (Nb2O5) which formed nanoporous structure film. The structure was synthesized by anodizing niobium foils in glycerol based solution with 10 wt% supplied by two different voltages, 5V and 10V. The anodized foils that contained Nb2O5 film were then annealed to obtain an orthorhombic phase for 30 minutes at 450°C. The metal contact used for I-V testing was platinum (Pt) and it was deposited using thermal evaporator at 30nm thickness. I-V tests were conducted under different condition; dark and illumination to study the effect of light on I-V characteristics of anodized nanoporous Nb2O5. Higher anodization voltage and longer anodization time resulted in higher pore dispersion and larger pore size causing the current to increase. The increase of conductivity in I-V behaviour of Nb2O5 device is also affected by the illumination test as higher light intensity caused space charge region width to increase, thus making it easier for electron transfer between energy band gap.

  19. Current-voltage characteristics of the semiconductor nanowires under the metal-semiconductor-metal structure

    Science.gov (United States)

    Wen, Jing; Zhang, Xitian; Gao, Hong; Wang, Mingjiao

    2013-12-01

    We present a method to calculate the I-V characteristics of semiconductor nanowires under the metal-semiconductor-metal (MSM) structure. The carrier concentration as an important parameter is introduced into the expression of the current. The subband structure of the nanowire has been considered for associating it with the position of the Fermi level and circumventing the uncertainties of the contact areas in the contacts. The tunneling and thermionic emission currents in the two Schottky barriers at the two metal-semiconductor contacts are discussed. We find that the two barriers have different influences on the I-V characteristics of the MSM structure, one of which under the forward bias plays the role of threshold voltage if its barrier height is large and the applied voltage is small, and the other under the reverse bias controls the shapes of I-V curves. Our calculations show that the shapes of the I-V curves for the MSM structure are mainly determined by the barrier heights of the contacts and the carrier concentration. The nearly identical I-V characteristics can be obtained by using different values of the barrier heights and carrier concentration, which means that the contact type conversion can be ascribed not only to the changes of the barrier heights but also that of the carrier concentration. We also discuss the mechanisms of the ohmic-Schottky conversions and clarify the ambiguity in the literature. The possibility about the variation of the carrier concentration under the applied fields has been confirmed by experimental results.

  20. Current-voltage characteristics of a tunnel junction with resonant centers

    International Nuclear Information System (INIS)

    Ivanov, T.; Valtchinov, V.

    1994-05-01

    We calculated the I-V characteristics of a tunnel junction containing impurities in the barrier. We consider the indirect resonant tunneling involving the impurities. The Coulomb repulsion energy E c between two electrons with opposite spins simultaneously residing on the impurity is introduced by an Anderson Hamiltonian. At low temperatures T is much less than E c the I-V characteristics is linear in V both for V c and for V>E c and changes slope at V=E c . This behaviour reflects the energy spectrum of the impurity electrons - the finite value of the charging energy E c . At T ∼ E c the junction reveals an ohmic-like behaviour as a result of the smearing out of the charging effects by the thermal fluctuations. (author). 10 refs, 2 figs

  1. Understanding S-shaped current-voltage characteristics of organic solar cells: Direct measurement of potential distributions by scanning Kelvin probe

    Science.gov (United States)

    Saive, Rebecca; Mueller, Christian; Schinke, Janusz; Lovrincic, Robert; Kowalsky, Wolfgang

    2013-12-01

    We present a comparison of the potential distribution along the cross section of bilayer poly(3-hexylthiophene)/1-(3-methoxycarbonyl)propyl-1-phenyl[6,6]C61 (P3HT/PCBM) solar cells, which show normal and anomalous, S-shaped current-voltage (IV) characteristics. We expose the cross sections of the devices with a focussed ion beam and measure them with scanning Kelvin probe microscopy. We find that in the case of S-shaped IV-characteristics, there is a huge potential drop at the PCBM/Al top contact, which does not occur in solar cells with normal IV-characteristics. This behavior confirms the assumption that S-shaped curves are caused by hindered charge transport at interfaces.

  2. Understanding S-shaped current-voltage characteristics of organic solar cells: Direct measurement of potential distributions by scanning Kelvin probe

    International Nuclear Information System (INIS)

    Saive, Rebecca; Kowalsky, Wolfgang; Mueller, Christian; Schinke, Janusz; Lovrincic, Robert

    2013-01-01

    We present a comparison of the potential distribution along the cross section of bilayer poly(3-hexylthiophene)/1-(3-methoxycarbonyl)propyl-1-phenyl[6,6]C61 (P3HT/PCBM) solar cells, which show normal and anomalous, S-shaped current-voltage (IV) characteristics. We expose the cross sections of the devices with a focussed ion beam and measure them with scanning Kelvin probe microscopy. We find that in the case of S-shaped IV-characteristics, there is a huge potential drop at the PCBM/Al top contact, which does not occur in solar cells with normal IV-characteristics. This behavior confirms the assumption that S-shaped curves are caused by hindered charge transport at interfaces

  3. Photonic characterization of capacitance-voltage characteristics in MOS capacitors and current-voltage characteristics in MOSFETs

    International Nuclear Information System (INIS)

    Kim, H. C.; Kim, H. T.; Cho, S. D.; Song, S. J.; Kim, Y. C.; Kim, S. K.; Chi, S. S.; Kim, D. J.; Kim, D. M.

    2002-01-01

    Based on the photonic high-frequency capacitance-voltage (HF-CV) response of MOS capacitors, a new characterization method is reported for the analysis of interface states in MOS systems. An optical source with a photonic energy less than the silicon band-gap energy (hv g ) is employed for the photonic HF-CV characterization of interface states distributed in the photoresponsive energy band (E C - hv t C ). If a uniform distribution of trap levels is assumed, the density of interface states (D it ) in the photoresponsive energy band of MOS capacitors, characterized by the new photonic HF-CV method, was observed to be D it = 1 ∼ 5 x 10 11 eV -1 cm -2 . Photonic current-voltage characteristics (I D - V GS , V DS ) of MOSFETs, which are under control of the photoconductive and the photovoltaic effects, are also investigated under optical illumination

  4. Radiation effects on the current-voltage and capacitance-voltage characteristics of advanced p-n junction diodes surrounded by shallow trench isolation

    International Nuclear Information System (INIS)

    Poyai, A.; Simoen, E.; Claeys, C.; Hayama, K.; Kobayashi, K.; Ohyama, H.

    2002-01-01

    This paper investigates the impact of 20 MeV proton irradiation on the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of different geometry n + -p-well junction diodes surrounded by shallow trench isolation and processed in a 0.18 μm CMOS technology. From I-V characteristics, a higher current damage coefficient was found for the bulk than for the peripheral component. The radiation-induced boron de-activation resulted in a lowering of the p-well doping, which has been derived from high-frequency C-V measurements. This was confirmed by deep level transient spectroscopy (DLTS) analysis, revealing the presence of interstitial boron related radiation defects. As will be demonstrated for the bulk leakage-current damage coefficient, the electric field enhanced generation rate of charge carriers and the radiation-induced boron de-activation should be accounted for properly

  5. Analytical form of current-voltage characteristic of parallel-plane, cylindrical and spherical ionization chambers with homogeneous ionization

    Energy Technology Data Exchange (ETDEWEB)

    Stoyanov, D G [Faculty of Engineering and Pedagogy in Sliven, Technical University of Sofia, 59, Bourgasko Shaussee Blvd, 8800 Sliven (Bulgaria)

    2007-11-15

    The elementary processes taking place in the formation of charged particles and their flow in parallel-plane, cylindrical and spherical geometry cases of ionization chamber are considered. On the basis of particles and charges balance a differential equation describing the distribution of current densities in the ionization chamber volume is obtained. As a result of the differential equation solution an analytical form of the current-voltage characteristic of an ionization chamber with homogeneous ionization is obtained. For the parallel-plane case comparision with experimental data is performed.

  6. Analytical form of current-voltage characteristic of parallel-plane, cylindrical and spherical ionization chambers with homogeneous ionization

    International Nuclear Information System (INIS)

    Stoyanov, D G

    2007-01-01

    The elementary processes taking place in the formation of charged particles and their flow in parallel-plane, cylindrical and spherical geometry cases of ionization chamber are considered. On the basis of particles and charges balance a differential equation describing the distribution of current densities in the ionization chamber volume is obtained. As a result of the differential equation solution an analytical form of the current-voltage characteristic of an ionization chamber with homogeneous ionization is obtained. For the parallel-plane case comparision with experimental data is performed

  7. Revisiting the role of trap-assisted-tunneling process on current-voltage characteristics in tunnel field-effect transistors

    Science.gov (United States)

    Omura, Yasuhisa; Mori, Yoshiaki; Sato, Shingo; Mallik, Abhijit

    2018-04-01

    This paper discusses the role of trap-assisted-tunneling process in controlling the ON- and OFF-state current levels and its impacts on the current-voltage characteristics of a tunnel field-effect transistor. Significant impacts of high-density traps in the source region are observed that are discussed in detail. With regard to recent studies on isoelectronic traps, it has been discovered that deep level density must be minimized to suppress the OFF-state leakage current, as is well known, whereas shallow levels can be utilized to control the ON-state current level. A possible mechanism is discussed based on simulation results.

  8. Measurement and statistical analysis of single-molecule current-voltage characteristics, transition voltage spectroscopy, and tunneling barrier height.

    Science.gov (United States)

    Guo, Shaoyin; Hihath, Joshua; Díez-Pérez, Ismael; Tao, Nongjian

    2011-11-30

    We report on the measurement and statistical study of thousands of current-voltage characteristics and transition voltage spectra (TVS) of single-molecule junctions with different contact geometries that are rapidly acquired using a new break junction method at room temperature. This capability allows one to obtain current-voltage, conductance voltage, and transition voltage histograms, thus adding a new dimension to the previous conductance histogram analysis at a fixed low-bias voltage for single molecules. This method confirms the low-bias conductance values of alkanedithiols and biphenyldithiol reported in literature. However, at high biases the current shows large nonlinearity and asymmetry, and TVS allows for the determination of a critically important parameter, the tunneling barrier height or energy level alignment between the molecule and the electrodes of single-molecule junctions. The energy level alignment is found to depend on the molecule and also on the contact geometry, revealing the role of contact geometry in both the contact resistance and energy level alignment of a molecular junction. Detailed statistical analysis further reveals that, despite the dependence of the energy level alignment on contact geometry, the variation in single-molecule conductance is primarily due to contact resistance rather than variations in the energy level alignment.

  9. Determination of the internal parameters of tc from the current-voltage characteristics

    International Nuclear Information System (INIS)

    Kaibyshev, V.Z.

    1986-01-01

    This paper proposes a method for determining the effective work function of a collector, the electron temperature, and the voltage drop in the interelectrode gap from the experimental vurrent-voltage characteristics (IVC). Analysis of the boundary conditions at the collector shows that as the emission from the collector increases the height of the potential jump retarding plasma electrons decrease

  10. Onset of chaos and dc current-voltage characteristics of rf-driven Josephson junctions in the low-frequency regime

    International Nuclear Information System (INIS)

    Chi, C.C.; Vanneste, C.

    1990-01-01

    A comprehensive picture of the dc current-voltage (I-V) characteristics of rf-driven Josephson junctions in the low-frequency regime is presented. The boundary of the low-frequency regime is roughly defined by the junction characteristic frequency for overdamped junctions, and by the inverse of the junction damping time for underdamped junctions. An adiabatic model valid for the low-frequency regime is used to describe the overall shapes of the I-V curves, which is in good agreement with both the numerical simulations and the experimental results. For underdamped junctions, the Shapiro steps are the prominent features on the I-V curves if the rf frequency is sufficiently below the boundary. As the rf frequency is increased towards the boundary, large negatively-going tails on top of the Shapiro steps are observed both experimentally and numerically. Numerical simulations using the resistively- and capacitively-shunted-junction model (RCSJ model) reveal that the negatively-going tail is a signature of the low-frequency boundary of the junction chaotic regime. With use of the adiabatic model and the existence of plasma oscillations for underdamped junctions, the onset of chaos and its effect on the Shapiro steps can be fully explained. The high-frequency limit of the adiabatic model and the chaotic behavior of the Josephson junctions beyond the low-frequency regime are also briefly discussed

  11. Cathode fall model and current-voltage characteristics of field emission driven direct current microplasmas

    Energy Technology Data Exchange (ETDEWEB)

    Venkattraman, Ayyaswamy [Department of Applied Mechanics, Indian Institute of Technology Madras, Chennai 600036 (India)

    2013-11-15

    The post-breakdown characteristics of field emission driven microplasma are studied theoretically and numerically. A cathode fall model assuming a linearly varying electric field is used to obtain equations governing the operation of steady state field emission driven microplasmas. The results obtained from the model by solving these equations are compared with particle-in-cell with Monte Carlo collisions simulation results for parameters including the plasma potential, cathode fall thickness, ion number density in the cathode fall, and current density vs voltage curves. The model shows good overall agreement with the simulations but results in slightly overpredicted values for the plasma potential and the cathode fall thickness attributed to the assumed electric field profile. The current density vs voltage curves obtained show an arc region characterized by negative slope as well as an abnormal glow discharge characterized by a positive slope in gaps as small as 10 μm operating at atmospheric pressure. The model also retrieves the traditional macroscale current vs voltage theory in the absence of field emission.

  12. Cathode fall model and current-voltage characteristics of field emission driven direct current microplasmas

    International Nuclear Information System (INIS)

    Venkattraman, Ayyaswamy

    2013-01-01

    The post-breakdown characteristics of field emission driven microplasma are studied theoretically and numerically. A cathode fall model assuming a linearly varying electric field is used to obtain equations governing the operation of steady state field emission driven microplasmas. The results obtained from the model by solving these equations are compared with particle-in-cell with Monte Carlo collisions simulation results for parameters including the plasma potential, cathode fall thickness, ion number density in the cathode fall, and current density vs voltage curves. The model shows good overall agreement with the simulations but results in slightly overpredicted values for the plasma potential and the cathode fall thickness attributed to the assumed electric field profile. The current density vs voltage curves obtained show an arc region characterized by negative slope as well as an abnormal glow discharge characterized by a positive slope in gaps as small as 10 μm operating at atmospheric pressure. The model also retrieves the traditional macroscale current vs voltage theory in the absence of field emission

  13. Current-Voltage and Floating-Potential characteristics of cylindrical emissive probes from a full-kinetic model based on the orbital motion theory

    Science.gov (United States)

    Chen, Xin; Sánchez-Arriaga, Gonzalo

    2018-02-01

    To model the sheath structure around an emissive probe with cylindrical geometry, the Orbital-Motion theory takes advantage of three conserved quantities (distribution function, transverse energy, and angular momentum) to transform the stationary Vlasov-Poisson system into a single integro-differential equation. For a stationary collisionless unmagnetized plasma, this equation describes self-consistently the probe characteristics. By solving such an equation numerically, parametric analyses for the current-voltage (IV) and floating-potential (FP) characteristics can be performed, which show that: (a) for strong emission, the space-charge effects increase with probe radius; (b) the probe can float at a positive potential relative to the plasma; (c) a smaller probe radius is preferred for the FP method to determine the plasma potential; (d) the work function of the emitting material and the plasma-ion properties do not influence the reliability of the floating-potential method. Analytical analysis demonstrates that the inflection point of an IV curve for non-emitting probes occurs at the plasma potential. The flat potential is not a self-consistent solution for emissive probes.

  14. Analysis of current-voltage characteristics of Au/pentacene/fluorine polymer/indium zinc oxide diodes by electric-field-induced optical second-harmonic generation

    Energy Technology Data Exchange (ETDEWEB)

    Nishi, Shohei; Taguchi, Dai; Manaka, Takaaki; Iwamoto, Mitsumasa, E-mail: iwamoto@pe.titech.ac.jp [Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 S3-33, O-okayama, Meguro-ku, Tokyo 152-8552 (Japan)

    2015-06-28

    By using electric-field-induced optical second-harmonic generation measurement coupled with the conventional current-voltage (I-V) measurement, we studied the carrier transport of organic double-layer diodes with a Au/pentacene/fluorine polymer (FP)/indium zinc oxide (IZO) structure. The rectifying I-V characteristics were converted into the I-E characteristics of the FP and pentacene layers. Results suggest a model in which Schottky-type electron injection from the IZO electrode to the FP layer governs the forward electrical conduction (V > 0), where the space charge electric field produced in the FP layer by accumulated holes at the pentacene/FP interface makes a significant contribution. On the other hand, Schottky-type injection by accumulated interface electrons from the pentacene layer to the FP layer governs the backward electrical conduction (V < 0). The electroluminescence generated from the pentacene layer in the region V > 0 verifies the electron transport across the FP layer, and supports the above suggested model.

  15. Analysis of current-voltage characteristics of Au/pentacene/fluorine polymer/indium zinc oxide diodes by electric-field-induced optical second-harmonic generation

    International Nuclear Information System (INIS)

    Nishi, Shohei; Taguchi, Dai; Manaka, Takaaki; Iwamoto, Mitsumasa

    2015-01-01

    By using electric-field-induced optical second-harmonic generation measurement coupled with the conventional current-voltage (I-V) measurement, we studied the carrier transport of organic double-layer diodes with a Au/pentacene/fluorine polymer (FP)/indium zinc oxide (IZO) structure. The rectifying I-V characteristics were converted into the I-E characteristics of the FP and pentacene layers. Results suggest a model in which Schottky-type electron injection from the IZO electrode to the FP layer governs the forward electrical conduction (V > 0), where the space charge electric field produced in the FP layer by accumulated holes at the pentacene/FP interface makes a significant contribution. On the other hand, Schottky-type injection by accumulated interface electrons from the pentacene layer to the FP layer governs the backward electrical conduction (V < 0). The electroluminescence generated from the pentacene layer in the region V > 0 verifies the electron transport across the FP layer, and supports the above suggested model

  16. Low-temperature current-voltage characteristics of MIS Cu/n-GaAs and inhomogeneous Cu/n-GaAs Schottky diodes

    Energy Technology Data Exchange (ETDEWEB)

    Biber, M

    2003-01-01

    The current-voltage (I-V) characteristics of metal-insulating layer-semiconductor Cu/n-GaAs and inhomogeneous Cu/n-GaAs Schottky barrier diodes were determined in the temperature range 80-300 K. The evaluation of the experimental I-V data reveals a nonlinear increase of the zero-bias barrier height (qPHI{sub 0}) for the inhomogeneous Cu/n-GaAs Schottky barrier diodes and a linear increase of the zero-bias barrier height (qPHI{sub 0}) for Cu/n-GaAs Schottky barrier diodes with an interfacial layer. The ideality factor n decreases with increasing temperature for all diodes. Furthermore, the changes in PHI{sub 0} and n become quite significant below 150 K and the plot of ln(I{sub 0}/T{sup 2}) versus 1/T exhibits a non-linearity below 180 K for the inhomogeneous barrier diodes. Such behavior is attributed to barrier inhomogeneities by assuming a Gaussian distribution of barrier heights at the interface. The value of the Richardson constant was found to be 5.033 A/cm{sup 2} K{sup 2}, which is close to the theoretical value of 8.16 A/cm{sup 2} K{sup 2} used for the determination of the zero-bias barrier height.

  17. Current-voltage characteristics of single-molecule diarylethene junctions measured with adjustable gold electrodes in solution.

    Science.gov (United States)

    Briechle, Bernd M; Kim, Youngsang; Ehrenreich, Philipp; Erbe, Artur; Sysoiev, Dmytro; Huhn, Thomas; Groth, Ulrich; Scheer, Elke

    2012-01-01

    We report on an experimental analysis of the charge transport through sulfur-free photochromic molecular junctions. The conductance of individual molecules contacted with gold electrodes and the current-voltage characteristics of these junctions are measured in a mechanically controlled break-junction system at room temperature and in liquid environment. We compare the transport properties of a series of molecules, labeled TSC, MN, and 4Py, with the same switching core but varying side-arms and end-groups designed for providing the mechanical and electrical contact to the gold electrodes. We perform a detailed analysis of the transport properties of TSC in its open and closed states. We find rather broad distributions of conductance values in both states. The analysis, based on the assumption that the current is carried by a single dominating molecular orbital, reveals distinct differences between both states. We discuss the appearance of diode-like behavior for the particular species 4Py that features end-groups, which preferentially couple to the metal electrode by physisorption. We show that the energetic position of the molecular orbital varies as a function of the transmission. Finally, we show for the species MN that the use of two cyano end-groups on each side considerably enhances the coupling strength compared to the typical behavior of a single cyano group.

  18. The current-voltage characteristic and potential oscillations of a double layer in a triple plasma device

    International Nuclear Information System (INIS)

    Carpenter, R.T.; Torven, S.

    1986-07-01

    The properties of a strong double layer in a current circuit with a capacitance and an inductance are investigated in a triple plasma device. The double layer gives rise to a region of negative differential resistance in the current-voltage characteristic of the device, and this gives non-linear oscillations in the current and the potential drop over the double layer (PhiDL). For a sufficiently large circuit inductance PhiDL reaches an amplitude given by the induced voltage (-LdI/dt) which is much larger than the circuit EMF due to the rapid current decrease when PhiDL increases. A variable potential minimum exists in the plasma on the low potential side of the double layer, and the depth of the minimum increases when PhiDL increases. An increasing fraction of the electrons incident at the double layer are then reflected, and this is found to be the main process giving rise to the negative differential resistance. A qualitative model for the variation of the minimum potential with PhiDL is also proposed. It is based on the condition that the minimum potential must adjust itself self-consistentely so that quasi-neutrality is maintained in the plasma region where the minimum is assumed. (authors)

  19. Modeling of planar carbon nanotube field effect transistor and three dimensional simulation of current-voltage characteristics

    International Nuclear Information System (INIS)

    Dinh Sy Hien; Nguyen Thi Luong; Thi Tran Anh Tuan; Dinh Viet Nga

    2009-01-01

    We provide a CNTFET model with planar geometry. Planar CNTFETs constitute the majority of devices fabricated to date, mostly due to their relative simplicity and moderate compatibility with existing manufacturing technologies. We explore the possibilities of using non-equilibrium Green function method to get I-V characteristics for CNTFETs. This simulator also includes a graphic user interface (GUI) of Matlab that enables parameter entry, calculation control, intuitive display of calculation results, and in-situ data analysis methods. In this paper, we review the capabilities of simulator, and give examples of typical CNTFET 3D simulations. The I-V characteristics of CNTFET are also presented.

  20. Temperature dependent current-voltage characteristics of Au/n-Si Schottky barrier diodes and the effect of transition metal oxides as an interface layer

    Science.gov (United States)

    Mahato, Somnath; Puigdollers, Joaquim

    2018-02-01

    Temperature dependent current-voltage (I‒V) characteristics of Au/n-type silicon (n-Si) Schottky barrier diodes have been investigated. Three transition metal oxides (TMO) are used as an interface layer between gold and silicon. The basic Schottky diode parameters such as ideality factor (n), barrier height (ϕb 0) and series resistance (Rs) are calculated and successfully explained by the thermionic emission (TE) theory. It has been found that ideality factor decreased and barrier height increased with increased of temperature. The conventional Richardson plot of ln(I0/T2) vs. 1000/T is determined the activation energy (Ea) and Richardson constant (A*). Whereas value of 'A*' is much smaller than the known theoretical value of n-type Si. The temperature dependent I-V characteristics obtained the mean value of barrier height (ϕb 0 bar) and standard deviation (σs) from the linear plot of ϕap vs. 1000/T. From the modified Richardson plot of ln(I0/T2) ˗ (qσ)2/2(kT)2 vs. 1000/T gives Richardson constant and homogeneous barrier height of Schottky diodes. Main observation in this present work is the barrier height and ideality factor shows a considerable change but the series resistance value exhibits negligible change due to TMO as an interface layer.

  1. Analysis of the current-voltage characteristics of polymer-based organic light-emitting diodes (OLEDs deposited by spin coating

    Directory of Open Access Journals (Sweden)

    Ricardo Vera

    2010-04-01

    Full Text Available Polymer-based organic light-emitting diodes (OLEDs with the structure ITO / PEDOT:PSS / MDMO-PPV / Metal were prepared by spincoating. It is known that electroluminescence of these devices is strongly dependent on the material used as cathode and on the depositionparameters of the polymer electroluminescent layer MDMO-PPV. Objective. In this work the effect of i the frequency of the spin coater(1000-8000 rpm, ii the concentration of the MDMO-PPV: Toluene solution, and iii the material used as cathode (Aluminium or Silveron the electrical response of the devices, was evaluated through current-voltage (I-V measurements. Materials and methods. PEDOT:PPSand MDMO-PPV organic layers were deposited by spin coating on ITO substrates, and the OLED structure was completed with cathodesof aluminium and silver. The electric response of the devices was evaluated based on the I-V characteristics. Results. Diodes prepared withthinner organic films allow higher currents at lower voltages; this can be achieved either by increasing the frequency of the spin coater orby using concentrations of MDMO-PPV: Toluene lower than 2% weight. A fit of the experimental data showed that the diodes have twocontributions to the current. The first one is attributed to parasitic currents between anode and cathode, and the other one is a parallel currentthrough the organic layer, in which the carrier injection mechanism is mediated by thermionic emission. Conclusions. The results of thefitting and the energy level alignment through the whole structure show that PPV-based OLEDs are unipolar devices, with current mainlyattributed to hole transport.

  2. Investigation of the double exponential in the current-voltage characteristics of silicon solar cells. [proton irradiation effects on ATS 1 cells

    Science.gov (United States)

    Wolf, M.; Noel, G. T.; Stirn, R. J.

    1977-01-01

    Difficulties in relating observed current-voltage characteristics of individual silicon solar cells to their physical and material parameters were underscored by the unexpected large changes in the current-voltage characteristics telemetered back from solar cells on the ATS-1 spacecraft during their first year in synchronous orbit. Depletion region recombination was studied in cells exhibiting a clear double-exponential dark characteristic by subjecting the cells to proton irradiation. A significant change in the saturation current, an effect included in the Sah, Noyce, Shockley formulation of diode current resulting from recombination in the depletion region, was caused by the introduction of shallow levels in the depletion region by the proton irradiation. This saturation current is not attributable only to diffusion current from outside the depletion region and only its temperature dependence can clarify its origin. The current associated with the introduction of deep-lying levels did not change significantly in these experiments.

  3. Influence of surface losses and the self-pumping effect on current-voltage characteristics of a long Josephson junction

    DEFF Research Database (Denmark)

    Pankratov, A.L.; Sobolev, A.S.; Koshelets, V.P.

    2007-01-01

    We have numerically investigated the dynamics of a long linear Josephson tunnel junction with overlap geometry. Biased by a direct current (dc) and an applied dc magnetic field, the junction has important applications as tunable high frequency oscillator [flux-flow oscillator (FFO......) placed at both ends of the FFO. In our model, the damping parameter depends both on the spatial coordinate and on the amplitude of the ac voltage. In order to find the dc current-voltage curves, the damping parameter has to be calculated self-consistently by successive approximations and time integration...

  4. Possible influence of the voltage dependence of the Josephson tunneling current I(V,psi) on the corresponding current-voltage characteristic

    International Nuclear Information System (INIS)

    Hahlbohm, H.D.; Luebbig, H.; Luther, H.

    1975-01-01

    Analog computer calculations of the current-voltage characteristic involving the voltage dependence of the amplitudes of the tunneling current equation explicitly, for the case of a current driven tunneling junction at different temperatures are reported on. These studies are based upon the adiabatic representation of the current-phase relation. The influence of retarding effects is not included. Therefore the computational results can lead to practical consequences at best in the range near the transition temperature. (Auth.)

  5. The Role of Interface States and Series Resistance on the Current Voltage (I-V) Characterises of Au/n-CdTe Solar Cells

    International Nuclear Information System (INIS)

    Fiat, S.

    2008-01-01

    In order to well interpret the experimentally observed nonideal Au/n-CdTe solar cells parameters such as the zero-bias barrier height ( Φ B o), ideality factor (n), interface states (Nss) and series resistance. The energy distribution profile of Nss was obtained from forward bias I-V characteristics by taking in to account the bias dependent of the effective barrier height (Φ e )at room temperature.The values of Rs obtained from Cheung's functions. The higher values of n and Rs were attributed to the existence of a native insulator layer on CdTe surface and to high density of Nss localized at semiconductor/ insulator layer interface. The experimental I-V characteristics confirmed that the the thickness of insulator layer (δ o x) ,magnitude or Rs and Nss and a particular distribution of Nss in the band gap are important parameters that influence the electrical parameters of Au/n-CdTe solar cells

  6. The nonideality coefficient of current-voltage characteristics for p-n junctions in a high ultrahigh-frequency (microwave) field

    International Nuclear Information System (INIS)

    Shamirzaev, S. H.; Gulyamov, G.; Dadamirzaev, M. G.; Gulyamov, A. G.

    2009-01-01

    The effect of heating of electrons and holes on the nonideality coefficient of the current-voltage characteristic for a p-n junction in a high microwave field is studied. It is established that the nonideality coefficient for a diode depends on the type of charge carriers that make the major contribution to the current in the p-n junction. It is shown that, in some cases in silicon samples, the nonideality coefficient for the diode is governed by the temperature for holes in spite of the fact that the temperature for electrons is higher than the temperature for holes.

  7. Manifestation of vortex depinning transition in nonlinear current-voltage characteristics of polycrystalline superconductor Y1-xPrxBa2Cu3O7-δ

    International Nuclear Information System (INIS)

    Rivera, V.A.G.; Stari, C.; Sergeenkov, S.; Marega, E.; Araujo-Moreira, F.M.

    2008-01-01

    We present our recent results on the temperature dependence of current-voltage characteristics for polycrystalline Y 1-x Pr x Ba 2 Cu 3 O 7-δ superconductors with x=0.0, 0.1 and 0.3. The experimental results are found to be reasonably well fitted for all samples by a power like law of the form V=R(I-I c ) a(T) . Here, we assume that a(T)=1+Φ 0 I C (T)/2πk B T and I C (T)=I C (0)(1-T/T C ) 3/2 for the temperature dependences of the power exponent and critical current, respectively. According to the theoretical interpretation of the obtained results, nonlinear deviation of our current-voltage characteristics curves from Ohmic behavior (with a(T C )=1) below T C is attributed to the manifestation of dissipation processes. They have a characteristic temperature T p defined via the power exponent as a(T p )=2 and are related to the current induced depinning of Abrikosov vortices. Both T C (x) and T p (x) are found to decrease with an increase of Pr concentration x reflecting deterioration of the superconducting properties of the doped samples

  8. Magnetic field cycling effect on the non-linear current-voltage characteristics and magnetic field induced negative differential resistance in α-Fe1.64Ga0.36O3 oxide

    Science.gov (United States)

    Bhowmik, R. N.; Vijayasri, G.

    2015-06-01

    We have studied current-voltage (I-V) characteristics of α-Fe1.64Ga0.36O3, a typical canted ferromagnetic semiconductor. The sample showed a transformation of the I-V curves from linear to non-linear character with the increase of bias voltage. The I-V curves showed irreversible features with hysteresis loop and bi-stable electronic states for up and down modes of voltage sweep. We report positive magnetoresistance and magnetic field induced negative differential resistance as the first time observed phenomena in metal doped hematite system. The magnitudes of critical voltage at which I-V curve showed peak and corresponding peak current are affected by magnetic field cycling. The shift of the peak voltage with magnetic field showed a step-wise jump between two discrete voltage levels with least gap (ΔVP) 0.345(± 0.001) V. The magnetic spin dependent electronic charge transport in this new class of magnetic semiconductor opens a wide scope for tuning large electroresistance (˜500-700%), magnetoresistance (70-135 %) and charge-spin dependent conductivity under suitable control of electric and magnetic fields. The electric and magnetic field controlled charge-spin transport is interesting for applications of the magnetic materials in spintronics, e.g., magnetic sensor, memory devices and digital switching.

  9. Magnetic field cycling effect on the non-linear current-voltage characteristics and magnetic field induced negative differential resistance in α-Fe{sub 1.64}Ga{sub 0.36}O{sub 3} oxide

    Energy Technology Data Exchange (ETDEWEB)

    Bhowmik, R. N., E-mail: rnbhowmik.phy@pondiuni.edu.in; Vijayasri, G. [Department of Physics, Pondicherry University, R.Venkataraman Nagar, Kalapet, Puducherry - 605 014 (India)

    2015-06-15

    We have studied current-voltage (I-V) characteristics of α-Fe{sub 1.64}Ga{sub 0.36}O{sub 3}, a typical canted ferromagnetic semiconductor. The sample showed a transformation of the I-V curves from linear to non-linear character with the increase of bias voltage. The I-V curves showed irreversible features with hysteresis loop and bi-stable electronic states for up and down modes of voltage sweep. We report positive magnetoresistance and magnetic field induced negative differential resistance as the first time observed phenomena in metal doped hematite system. The magnitudes of critical voltage at which I-V curve showed peak and corresponding peak current are affected by magnetic field cycling. The shift of the peak voltage with magnetic field showed a step-wise jump between two discrete voltage levels with least gap (ΔV{sub P}) 0.345(± 0.001) V. The magnetic spin dependent electronic charge transport in this new class of magnetic semiconductor opens a wide scope for tuning large electroresistance (∼500-700%), magnetoresistance (70-135 %) and charge-spin dependent conductivity under suitable control of electric and magnetic fields. The electric and magnetic field controlled charge-spin transport is interesting for applications of the magnetic materials in spintronics, e.g., magnetic sensor, memory devices and digital switching.

  10. Magnetic field cycling effect on the non-linear current-voltage characteristics and magnetic field induced negative differential resistance in α-Fe1.64Ga0.36O3 oxide

    Directory of Open Access Journals (Sweden)

    R. N. Bhowmik

    2015-06-01

    Full Text Available We have studied current-voltage (I-V characteristics of α-Fe1.64Ga0.36O3, a typical canted ferromagnetic semiconductor. The sample showed a transformation of the I-V curves from linear to non-linear character with the increase of bias voltage. The I-V curves showed irreversible features with hysteresis loop and bi-stable electronic states for up and down modes of voltage sweep. We report positive magnetoresistance and magnetic field induced negative differential resistance as the first time observed phenomena in metal doped hematite system. The magnitudes of critical voltage at which I-V curve showed peak and corresponding peak current are affected by magnetic field cycling. The shift of the peak voltage with magnetic field showed a step-wise jump between two discrete voltage levels with least gap (ΔVP 0.345(± 0.001 V. The magnetic spin dependent electronic charge transport in this new class of magnetic semiconductor opens a wide scope for tuning large electroresistance (∼500-700%, magnetoresistance (70-135 % and charge-spin dependent conductivity under suitable control of electric and magnetic fields. The electric and magnetic field controlled charge-spin transport is interesting for applications of the magnetic materials in spintronics, e.g., magnetic sensor, memory devices and digital switching.

  11. Simulation of current-voltage characteristics of a MOS structure considering the tunnel transport of carriers in semiconductor

    International Nuclear Information System (INIS)

    Vexler, M I

    2006-01-01

    The effect of a tunnel charge transport in the near-surface region of silicon on the electrical characteristics of MOS structures with a 2-3 nm insulator layer is studied theoretically. An equilibrium condition for the substrate is assumed. The cases of an Al and polySi gate are considered. The possibility of a 'double' (in Si and through SiO 2 ) tunnelling expands the energy range of transported particles, which increases one of the components of the total tunnel current. The proposed model allows for the improved simulation of gate current in MOSFETs, which is especially important for highly-doped substrates

  12. Effect of temperature on current voltage characteristics in ZnO/CdS/CuGaSe2 single crystal solar cells

    International Nuclear Information System (INIS)

    Saad, M.; Kassis, A.

    2005-03-01

    Current voltage characteristics of Zn O/CdS/CuGaSe 2 single crystal solar cells, which have gone through repetitive annealing treatment and have been measured at different values of temperature and illumination intensity, were analyzed using the two-diode equation. The analysis revealed that current transport in these cells is governed by two competing transport mechanisms relating strongly to interface states and that both mechanisms are thermally and light activated. These two mechanisms are interface recombination and tunneling enhanced interface recombination. The activation energy values of the saturation current density in both mechanisms were calculated from the temperature dependence of the parameters describing each of them. It was found that these values depend on temperature and illumination intensity. Furthermore, the behavior of the photovoltaic parameters could be explained relying on the results of the analysis. (Authors)

  13. Influence of semiconductor barrier tunneling on the current-voltage characteristics of tunnel metal-oxide-semiconductor diodes

    DEFF Research Database (Denmark)

    Nielsen, Otto M.

    1983-01-01

    of multistep tunneling recombination current and injected minority carrier diffusion current. This can explain the observed values of the diode quality factor n. The results also show that the voltage drop across the oxide Vox is increased with increased NA, with the result that the lowering of the minority...... carrier diode current Jmin is greater than in the usual theory. The conclusion drawn is that the increase in Vox and lowering of Jmin is due to multistep tunneling of majority carriers through the semiconductor barrier. Journal of Applied Physics is copyrighted by The American Institute of Physics.......Current–voltage characteristics have been examined for Al–SiO2–pSi diodes with an interfacial oxide thickness of delta[approximately-equal-to]20 Å. The diodes were fabricated on and oriented substrates with an impurity concentration in the range of NA=1014–1016 cm−3. The results show that for low...

  14. Thickness dependence of the poling and current-voltage characteristics of paint films made up of lead zirconate titanate ceramic powder and epoxy resin

    Science.gov (United States)

    Egusa, Shigenori; Iwasawa, Naozumi

    1995-11-01

    A specially prepared paint made up of lead zirconate titanate (PZT) ceramic powder and epoxy resin was coated on an aluminum plate and was cured at room temperature, thus forming the paint film of 25-300 μm thickness with a PZT volume fraction of 53%. The paint film was then poled at room temperature, and the poling behavior was determined by measuring the piezoelectric activity as a function of poling field. The poling behavior shows that the piezoelectric activity obtained at a given poling field increases with an increase in the film thickness from 25 to 300 μm. The current-voltage characteristic of the paint film, on the other hand, shows that the increase in the film thickness leads not only to an increase in the magnitude of the current density at a given electric field but also to an increase in the critical electric field at which the transition from the ohmic to space-charge-limited conduction takes place. This fact indicates that the amount of the space charge of electrons injected into the paint film decreases as the film thickness increases. Furthermore, comparison of the current-voltage characteristic of the paint film with that of a pure epoxy film reveals that the space charge is accumulated largely at the interface between the PZT and epoxy phases in the paint film. On the basis of this finding, a model is developed for the poling behavior of the paint film by taking into account a possible effect of the space-charge accumulation and a broad distribution of the electric field in the PZT phase. This model is shown to give an excellent fit to the experimental data of the piezoelectric activity obtained here as a function of poling field and film thickness.

  15. Power series fitting of current-voltage characteristics of Al doped ZnO thin film-Sb doped (Ba{sub 0.8}Sr{sub 0.2})TiO{sub 3} heterojunction diode

    Energy Technology Data Exchange (ETDEWEB)

    Sirikulrat, N., E-mail: scphi003@chiangmai.ac.th

    2012-02-29

    The current-voltage (I-V) relationship of aluminum doped zinc oxide thin film-antimony doped barium strontium titanate single heterojunction diodes was investigated. The linear I-V characteristics are similar to those of the PN junction diodes. The linear conduction at a low forward bias voltage as predicted by the space charge limited current theory and the trap free square law at a higher forward voltage are observed. The overall current density-voltage (J-V) characteristics of the diodes are found to be well described by the Power Series Equation J= N-Ary-Summation {sub m}C{sub m}V{sup m} where C{sub m} is the leakage constant at particular power m with the best fit for the power m found to be at the fourth and fifth orders for the forward and reverse bias respectively. - Highlights: Black-Right-Pointing-Pointer The n-n isotype heterojunction diodes of ceramic oxide semiconductors were prepared. Black-Right-Pointing-Pointer The current density-voltage (J-V) curves were analyzed using the Power Series (PS). Black-Right-Pointing-Pointer The J-V characteristics were found to be well described with PS at low order. Black-Right-Pointing-Pointer The thermionic emission and diode leakage currents were comparatively discussed.

  16. The effects of fabrication temperature on current-voltage characteristics and energy efficiencies of quantum dot sensitized ZnOH-GO hybrid solar cells

    International Nuclear Information System (INIS)

    Islam, S. M. Z.; Gayen, Taposh; Tint, Naing; Alfano, Robert; Shi, Lingyan; Seredych, Mykola; Bandosz, Teresa J.

    2014-01-01

    The effects of fabrication temperature are investigated on the performance of CdSe quantum dot (QD)-sensitized hybrid solar cells of the composite material of zinc (hydr)oxide (ZnOH-GO)with 2 wt. % graphite oxide. The current-voltage (I-V) and photo-current measurements show that higher fabrication temperatures yield greater photovoltaic power conversion efficiencies that essentially indicate more efficient solar cells. Two Photon Fluorescence images show the effects of temperature on the internal morphologies of the solar devices based on such materials. The CdSe-QD sensitized ZnOH-GO hybrid solar cells fabricated at 450 °C showing conversion of ∼10.60% under a tungsten lamp (12.1 mW/cm 2 ) are reported here, while using potassium iodide as an electrolyte. The output photocurrent, I (μA) with input power, P (mW/cm 2 ) is found to be superlinear, showing a relation of I = P n , where n = 1.4.

  17. High-temperature performance of MoS{sub 2} thin-film transistors: Direct current and pulse current-voltage characteristics

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, C.; Samnakay, R.; Balandin, A. A., E-mail: balandin@ee.ucr.edu [Nano-Device Laboratory (NDL), Department of Electrical Engineering, Bourns College of Engineering, University of California—Riverside, Riverside, California 92521 (United States); Phonon Optimized Engineered Materials (POEM) Center, Materials Science and Engineering Program, University of California—Riverside, Riverside, California 92521 (United States); Rumyantsev, S. L. [Department of Electrical, Computer, and Systems Engineering, Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Ioffe Physical-Technical Institute, St. Petersburg 194021 (Russian Federation); Shur, M. S. [Department of Electrical, Computer, and Systems Engineering, Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States)

    2015-02-14

    We report on fabrication of MoS{sub 2} thin-film transistors (TFTs) and experimental investigations of their high-temperature current-voltage characteristics. The measurements show that MoS{sub 2} devices remain functional to temperatures of at least as high as 500 K. The temperature increase results in decreased threshold voltage and mobility. The comparison of the direct current (DC) and pulse measurements shows that the direct current sub-linear and super-linear output characteristics of MoS{sub 2} thin-films devices result from the Joule heating and the interplay of the threshold voltage and mobility temperature dependences. At temperatures above 450 K, a kink in the drain current occurs at zero gate voltage irrespective of the threshold voltage value. This intriguing phenomenon, referred to as a “memory step,” was attributed to the slow relaxation processes in thin films similar to those in graphene and electron glasses. The fabricated MoS{sub 2} thin-film transistors demonstrated stable operation after two months of aging. The obtained results suggest new applications for MoS{sub 2} thin-film transistors in extreme-temperature electronics and sensors.

  18. Defect States in InP/InGaAs/InP Heterostructures by Current-Voltage Characteristics and Deep Level Transient Spectroscopy.

    Science.gov (United States)

    Vu, Thi Kim Oanh; Lee, Kyoung Su; Lee, Sang Jun; Kim, Eun Kyu

    2018-09-01

    We studied defect states in In0.53Ga0.47As/InP heterojunctions with interface control by group V atoms during metalorganic chemical vapor (MOCVD) deposition. From deep level transient spectroscopy (DLTS) measurements, two defects with activation energies of 0.28 eV (E1) and 0.15 eV (E2) below the conduction band edge, were observed. The defect density of E1 for In0.53Ga0.47As/InP heterojunctions with an addition of As and P atoms was about 1.5 times higher than that of the heterojunction added P atom only. From the temperature dependence of current- voltage characteristics, the thermal activation energies of In0.53Ga0.47As/InP of heterojunctions were estimated to be 0.27 and 0.25 eV, respectively. It appeared that the reverse light current for In0.53Ga0.47As/InP heterojunction added P atom increased only by illumination of a 940 nm-LED light source. These results imply that only the P addition at the interface can enhance the quality of InGaAs/InP heterojunction.

  19. Current-voltage characteristics of quantum-point contacts in the closed-channel regime: Transforming the bias voltage into an energy scale

    DEFF Research Database (Denmark)

    Gloos, K.; Utko, P.; Aagesen, M.

    2006-01-01

    We investigate the I(V) characteristics (current versus bias voltage) of side-gated quantum-point contacts, defined in GaAs/AlxGa1-xAs heterostructures. These point contacts are operated in the closed-channel regime, that is, at fixed gate voltages below zero-bias pinch-off for conductance. Our....... Such a built-in energy-voltage calibration allows us to distinguish between the different contributions to the electron transport across the pinched-off contact due to thermal activation or quantum tunneling. The first involves the height of the barrier, and the latter also its length. In the model that we...

  20. Parameter extraction from I-V characteristics of PV devices

    Energy Technology Data Exchange (ETDEWEB)

    Macabebe, Erees Queen B. [Department of Electronics, Computer and Communications Engineering, Ateneo de Manila University, Loyola Heights, Quezon City 1108 (Philippines); Department of Physics and Centre for Energy Research, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa); Sheppard, Charles J. [Department of Physics, University of Johannesburg, PO Box 524, Auckland Park 2006 (South Africa); Dyk, E. Ernest van [Department of Physics and Centre for Energy Research, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa)

    2011-01-15

    Device parameters such as series and shunt resistances, saturation current and diode ideality factor influence the behaviour of the current-voltage (I-V) characteristics of solar cells and photovoltaic modules. It is necessary to determine these parameters since performance parameters are derived from the I-V curve and information provided by the device parameters are useful in analyzing performance losses. This contribution presents device parameters of CuIn(Se,S){sub 2}- and Cu(In,Ga)(Se,S){sub 2}-based solar cells, as well as, CuInSe{sub 2}, mono- and multicrystalline silicon modules determined using a parameter extraction routine that employs Particle Swarm Optimization. The device parameters of the CuIn(Se,S){sub 2}- and Cu(In,Ga)(Se,S){sub 2}-based solar cells show that the contribution of recombination mechanisms exhibited by high saturation current when coupled with the effects of parasitic resistances result in lower maximum power and conversion efficiency. Device parameters of photovoltaic modules extracted from I-V characteristics obtained at higher temperature show increased saturation current. The extracted values also reflect the adverse effect of temperature on parasitic resistances. The parameters extracted from I-V curves offer an understanding of the different mechanisms involved in the operation of the devices. The parameter extraction routine utilized in this study is a useful tool in determining the device parameters which reveal the mechanisms affecting device performance. (author)

  1. The changes of capacitance-loss and current-voltage characteristics of LaMnO3+δ/SrTiO3:Nb heterojunctions exposed to ambient air

    International Nuclear Information System (INIS)

    Cui Yimin; Wang Rongming

    2010-01-01

    Effects of moisture absorption on capacitance-loss and current-voltage characteristics of LaMnO 3+δ /SrTiO 3 :Nb heterojunction had been investigated after the heterojunctions were exposed to ambient air. The moisture-absorption-induced increases in loss tangent and breakdown voltage were observed, whereas no changes were found on capacitance and diffusion voltage. These results were discussed by the decrease of oxygen ions in LaMnO 3+δ and the generation of hydroxide ions at grain boundaries. This work will favor both electronic transport analysis and future device applications.

  2. Current-voltage curves of gold quantum point contacts revisited

    DEFF Research Database (Denmark)

    Hansen, K.; Nielsen, S K.; Brandbyge, Mads

    2000-01-01

    We present measurements of current-voltage (I-V) curves on gold quantum point contacts (QPCs) with a conductance up to 4 G(0) (G(0) = 2e(2)/h is the conductance quantum) and voltages up to 2 V. The QPCs are formed between the gold tip of a scanning tunneling microscope and a Au(110) surface under...

  3. Modelling of current-voltage characteristics of infrared photo-detectors based on type – II InAs/GaSb super-lattice diodes with unipolar blocking layers

    Directory of Open Access Journals (Sweden)

    Vishnu Gopal

    2015-09-01

    Full Text Available It is shown that current-voltage characteristics of infrared photo-detectors based on type-II InAs/GaSb super-lattices with uni-polar blocking layers can be modelled similar to a junction diode with a finite series resistance on account of blocking barriers. As an example this paper presents the results of a study of current-voltage characteristics of a type II InAs/GaSb super-lattice diode with PbIbN architecture using a recently proposed [J. Appl. Phys. 116, 084502 (2014] method for modelling of illuminated photovoltaic detectors. The thermal diffusion, generation – recombination (g-r, and ohmic currents are found as principal components besides a component of photocurrent due to background illumination. The experimentally observed reverse bias diode current in excess of thermal current (diffusion + g-r, photo-current and ohmic shunt current is reported to be best described by an exponential function of the type, Iexcess = Ir0 + K1exp(K2 V, where Ir0, K1 and K2 are fitting parameters and V is the applied bias voltage. The present investigations suggest that the exponential growth of excess current with the applied bias voltage may be taking place along the localized regions in the diode. These localized regions are the shunt resistance paths on account of the surface leakage currents and/or defects and dislocations in the base of the diode.

  4. Understanding S-Shaped Current-Voltage Characteristics in Organic Solar Cells Containing a TiOx Inter layer with Impedance Spectroscopy and Equivalent Circuit Analysis

    NARCIS (Netherlands)

    Ecker, Bernhard; Egelhaaf, Hans-Joachim; Steim, Roland; Parisi, Juergen; von Hauff', Elizabeth

    2012-01-01

    In this study we propose an equivalent circuit model to describe S-shaped current–voltage (I–V) characteristics in inverted solar cells with a TiOx interlayer between the cathode and the poly(3-hexylthiophene):[6,6]-phenyl C61 butyric acid methyl ester active layer. Initially the solar cells

  5. Langmuir probe measurements in a time-fluctuating-highly ionized non-equilibrium cutting arc: Analysis of the electron retarding part of the time-averaged current-voltage characteristic of the probe

    International Nuclear Information System (INIS)

    Prevosto, L.; Mancinelli, B.; Kelly, H.

    2013-01-01

    This work describes the application of Langmuir probe diagnostics to the measurement of the electron temperature in a time-fluctuating-highly ionized, non-equilibrium cutting arc. The electron retarding part of the time-averaged current-voltage characteristic of the probe was analysed, assuming that the standard exponential expression describing the electron current to the probe in collision-free plasmas can be applied under the investigated conditions. A procedure is described which allows the determination of the errors introduced in time-averaged probe data due to small-amplitude plasma fluctuations. It was found that the experimental points can be gathered into two well defined groups allowing defining two quite different averaged electron temperature values. In the low-current region the averaged characteristic was not significantly disturbed by the fluctuations and can reliably be used to obtain the actual value of the averaged electron temperature. In particular, an averaged electron temperature of 0.98 ± 0.07 eV (= 11400 ± 800 K) was found for the central core of the arc (30 A) at 3.5 mm downstream from the nozzle exit. This average included not only a time-average over the time fluctuations but also a spatial-average along the probe collecting length. The fitting of the high-current region of the characteristic using such electron temperature value together with the corrections given by the fluctuation analysis showed a relevant departure of local thermal equilibrium in the arc core

  6. Langmuir probe measurements in a time-fluctuating-highly ionized non-equilibrium cutting arc: Analysis of the electron retarding part of the time-averaged current-voltage characteristic of the probe

    Energy Technology Data Exchange (ETDEWEB)

    Prevosto, L.; Mancinelli, B. [Grupo de Descargas Eléctricas, Departamento Ing. Electromecánica, Facultad Regional Venado Tuerto (UTN), Laprida 651, Venado Tuerto (2600) Santa Fe (Argentina); Kelly, H. [Grupo de Descargas Eléctricas, Departamento Ing. Electromecánica, Facultad Regional Venado Tuerto (UTN), Laprida 651, Venado Tuerto (2600) Santa Fe (Argentina); Instituto de Física del Plasma (CONICET), Departamento de Física, Facultad de Ciencias Exactas y Naturales (UBA) Ciudad Universitaria Pab. I, 1428 Buenos Aires (Argentina)

    2013-12-15

    This work describes the application of Langmuir probe diagnostics to the measurement of the electron temperature in a time-fluctuating-highly ionized, non-equilibrium cutting arc. The electron retarding part of the time-averaged current-voltage characteristic of the probe was analysed, assuming that the standard exponential expression describing the electron current to the probe in collision-free plasmas can be applied under the investigated conditions. A procedure is described which allows the determination of the errors introduced in time-averaged probe data due to small-amplitude plasma fluctuations. It was found that the experimental points can be gathered into two well defined groups allowing defining two quite different averaged electron temperature values. In the low-current region the averaged characteristic was not significantly disturbed by the fluctuations and can reliably be used to obtain the actual value of the averaged electron temperature. In particular, an averaged electron temperature of 0.98 ± 0.07 eV (= 11400 ± 800 K) was found for the central core of the arc (30 A) at 3.5 mm downstream from the nozzle exit. This average included not only a time-average over the time fluctuations but also a spatial-average along the probe collecting length. The fitting of the high-current region of the characteristic using such electron temperature value together with the corrections given by the fluctuation analysis showed a relevant departure of local thermal equilibrium in the arc core.

  7. Langmuir probe measurements in a time-fluctuating-highly ionized non-equilibrium cutting arc: analysis of the electron retarding part of the time-averaged current-voltage characteristic of the probe.

    Science.gov (United States)

    Prevosto, L; Kelly, H; Mancinelli, B

    2013-12-01

    This work describes the application of Langmuir probe diagnostics to the measurement of the electron temperature in a time-fluctuating-highly ionized, non-equilibrium cutting arc. The electron retarding part of the time-averaged current-voltage characteristic of the probe was analysed, assuming that the standard exponential expression describing the electron current to the probe in collision-free plasmas can be applied under the investigated conditions. A procedure is described which allows the determination of the errors introduced in time-averaged probe data due to small-amplitude plasma fluctuations. It was found that the experimental points can be gathered into two well defined groups allowing defining two quite different averaged electron temperature values. In the low-current region the averaged characteristic was not significantly disturbed by the fluctuations and can reliably be used to obtain the actual value of the averaged electron temperature. In particular, an averaged electron temperature of 0.98 ± 0.07 eV (= 11400 ± 800 K) was found for the central core of the arc (30 A) at 3.5 mm downstream from the nozzle exit. This average included not only a time-average over the time fluctuations but also a spatial-average along the probe collecting length. The fitting of the high-current region of the characteristic using such electron temperature value together with the corrections given by the fluctuation analysis showed a relevant departure of local thermal equilibrium in the arc core.

  8. Current-voltage hysteresis and dielectric properties of PVA coated MWCNT film

    Science.gov (United States)

    Das, Amit Kumar; Meikap, Ajit Kumar

    2017-12-01

    In this work, we have prepared polyvinyl alcohol (PVA) coated multiwall carbon nanotube (MWCNT) film by an in situ chemical oxidative preparation technique. The thermogravimetric analysis clearly explains the thermal degradation of pure polymer and polymer nanocomposite film. We have studied the AC electrical transport properties and current-voltage (I-V) characteristic of PVA-MWCNT composites within the temperature range 300 ≤ T ≤ 423 K and frequency range 150 Hz ≤ f ≤ 2 MHz. It is observed that the dielectric constant of the composite film increases significantly. The frequency variation of AC conductivity follows the power law ( ωS ) and a sharp transition from small polaron tunneling to correlated barrier hopping model is found. The imaginary part of electric modulus shows non-Debye type asymmetric behaviour. The impedance spectroscopy shows the negative temperature coefficient of resistance of the composite film. Nyquist plot of the composite film at different temperatures is established from impedance measurement. The current-voltage characteristic (under ± 20 V) shows hysteresis behaviour and field dependent resistance. We simulate the experimentally observed current density-electric field data with the established theory.

  9. Current-voltage hysteresis and dielectric properties of PVA coated MWCNT film

    Science.gov (United States)

    Das, Amit Kumar; Meikap, Ajit Kumar

    2018-06-01

    In this work, we have prepared polyvinyl alcohol (PVA) coated multiwall carbon nanotube (MWCNT) film by an in situ chemical oxidative preparation technique. The thermogravimetric analysis clearly explains the thermal degradation of pure polymer and polymer nanocomposite film. We have studied the AC electrical transport properties and current-voltage (I-V) characteristic of PVA-MWCNT composites within the temperature range 300 ≤ T ≤ 423 K and frequency range 150 Hz ≤ f ≤ 2 MHz. It is observed that the dielectric constant of the composite film increases significantly. The frequency variation of AC conductivity follows the power law ( ωS ) and a sharp transition from small polaron tunneling to correlated barrier hopping model is found. The imaginary part of electric modulus shows non-Debye type asymmetric behaviour. The impedance spectroscopy shows the negative temperature coefficient of resistance of the composite film. Nyquist plot of the composite film at different temperatures is established from impedance measurement. The current-voltage characteristic (under ± 20 V) shows hysteresis behaviour and field dependent resistance. We simulate the experimentally observed current density-electric field data with the established theory.

  10. Nonlinear current-voltage behavior in PZT thin films

    Energy Technology Data Exchange (ETDEWEB)

    Xiao, Mi; Zhang, Weikang; Zhang, Zebin; Li, Shida; Zhang, Ping; Lan, Kuibo [Tianjin University, School of Electrical and Information Engineering, Tianjin (China)

    2017-05-15

    In this paper, Pb(Zr{sub 0.52}Ti{sub 0.48})O{sub 3} (PZT) thin films were prepared by sol-gel synthesis and characterized by X-ray diffraction, field emission scanning electron microscopy and current-voltage measurements. Here, we demonstrate that in addition to the outstanding ferroelectric and dielectric properties, the PZT films also have remarkably nonlinear current-voltage characteristics. Considering the contact of semi-conductive grains in the PZT films, a double Schottky barrier (DSB) model may be responsible for such phenomena. The test results show that with the decrease of annealing temperature and the increase of the film thickness, the threshold voltages (V{sub th}) increase obviously. The maximum V{sub th} value of 60.95 V and the minimum value of 6.9 V in our experiments were obtained from the five-layered samples annealed at 600 C and the two-layered samples annealed at 700 C, respectively. As a result, PZT thin film may lead to efficient switching and sensing devices. (orig.)

  11. Current voltage perspective of an organic electronic device

    Science.gov (United States)

    Mukherjee, Ayash K.; Kumari, Nikita

    2018-05-01

    Nonlinearity in current (I) - voltage (V) measurement is a well-known attribute of two-terminal organic device, irrespective of the geometrical or structural arrangement of the device. Most of the existing theories that are developed for interpretation of I-V data, either focus current-voltage relationship of charge injection mechanism across the electrode-organic material interface or charge transport mechanism through the organic active material. On the contrary, both the mechanisms work in tandem charge conduction through the device. The transport mechanism is further complicated by incoherent scattering from scattering centres/charge traps that are located at the electrode-organic material interface and in the bulk of organic material. In the present communication, a collective expression has been formulated that comprises of all the transport mechanisms that are occurring at various locations of a planar organic device. The model has been fitted to experimental I-V data of Au/P3HT/Au device with excellent degree of agreement. Certain physical parameters such as the effective area of cross-section and resistance due to charge traps have been extracted from the fit.

  12. Water Electrolysis at Different Current - Voltage Regimes

    International Nuclear Information System (INIS)

    Kleperis, J.; Blums, J.; Vanags, M.

    2007-01-01

    Full text: Electrochemical impedance and volt-amperic methods were used to compare an efficiency of water electrolysis for different materials and different electrode configurations. Two and three electrode measurements were made, using standard calomel reference electrode. Non-standard capacitative electrolysis was analyzed in special cell made from cylindrical steel electrodes. Volt-amperic measurements from - 15V to +15V DC didn't indicated the presence of oxidation - reduction reactions when distilled water was used as electrolyte. Impedance measurements showed unusual frequency behavior when the AC voltage increased till 0.5V. Different nickel and carbon electrodes (plate, porous and textile - type) were used to learn classical Faraday electrolysis in strong alkali solutions. Flying increase of current was indicator of the presence of electrolysis, and characteristic potential was used differ between materials accordingly they effectiveness for usage in an electrolyser device. (Aithors)

  13. Features of the effect of the parameters of resonance systems with different configurations on the current-voltage characteristics of resonant-tunneling nanostructures in a subterahertz frequency range

    International Nuclear Information System (INIS)

    Aleksanyan, A.A.; Volchkov, N.A.; Dravin, V.A.; Kazakov, I.P.; Karuzskij, A.L.; Murzin, V.N.; Perestoronin, A.V.; Tskhovrebov, A.M.; Shmelev, S.S.

    2014-01-01

    Features of the effect of a subterahertz microwave field on the current characteristics of a resonant-tunneling diode in resonance systems with different configurations have been studied. Changes in the current characteristics of the resonant-tunneling diode under variation of the electrophysical parameters of dielectric and microstrip resonators, in particular high-Q-factor superconducting microstrip resonators, have been experimentally studied and analyzed [ru

  14. Current-voltage characterization of individual as-grown nanowires using a scanning tunneling microscope.

    Science.gov (United States)

    Timm, Rainer; Persson, Olof; Engberg, David L J; Fian, Alexander; Webb, James L; Wallentin, Jesper; Jönsson, Andreas; Borgström, Magnus T; Samuelson, Lars; Mikkelsen, Anders

    2013-11-13

    Utilizing semiconductor nanowires for (opto)electronics requires exact knowledge of their current-voltage properties. We report accurate on-top imaging and I-V characterization of individual as-grown nanowires, using a subnanometer resolution scanning tunneling microscope with no need for additional microscopy tools, thus allowing versatile application. We form Ohmic contacts to InP and InAs nanowires without any sample processing, followed by quantitative measurements of diameter dependent I-V properties with a very small spread in measured values compared to standard techniques.

  15. Angular-dependent I-V characteristics in borocarbide superconductor YNi2B2C

    International Nuclear Information System (INIS)

    Chu, R M; Chen, Q Y; Chu, W K

    2006-01-01

    We present angular-dependent current-voltage (I-V) measurements in borocarbide YNi 2 B 2 C single crystals near the vortex-glass irreversible line. External magnetic fields are applied along the angle θ with respect to the c-axis. The nonlinear I-V curves reveal scaling behaviour near the transition. Using the scaling analysis, the relevant critical exponents and vortex transition temperatures are determined for all orientations. The data agrees well with the vortex-glass (VG) model. No evidence was found that supports the existence of a Bose-glass (BG) type of transition

  16. I-V Characteristics of PtxCo1−x (x = 0.2, 0.5, and 0.7 Thin Films

    Directory of Open Access Journals (Sweden)

    M. Erkovan

    2013-01-01

    Full Text Available Three different chemical ratios of PtxCo1−x thin films were grown on p-type native oxide Si (100 by Magneto Sputtering System with cosputtering technique at 350°C temperature to investigate electrical prosperities. X-ray photoelectron spectroscopy analysis technique was used to specify chemical ratios of these films. The current-voltage (I-V measurements of metal-semiconductor (MS Schottky diodes were carried out at room temperature. From the I-V analysis of the samples, ideality factor (n, barrier height (ϕ, and contact resistance values were determined by using thermionic emission (TE theory. Some important parameters such as barrier height, ideality factor, and serial resistance were calculated from the I-V characteristics based on thermionic emission mechanism. The ideality factors of the samples were not much greater than unity, and the serial resistances of the samples were also very low.

  17. Random instabilities of current-voltage curves of BSCCO-2223/Ag multifilamentary tapes in LN2 at 77 K

    CERN Document Server

    Usak, P

    2003-01-01

    The measurement of the current-voltage (I-V) characteristics of BSCCO-2223/Ag multifilamentary tapes in a silver matrix has been performed on short samples (of several centimetres) as well as on long tape (1 m), wound in the form of a helical one-layer coil. Measurements at 77 K and in zero external magnetic field have revealed good reproducibility of the I-V hysteresis in most runs. Nevertheless, strange irregularities have sometimes been observed in the I-V curve behaviour during current ramping up and down. Quasi-reproducible drops from the ascending hysteretic branch in the direction of the descending one have been measured at higher voltage levels (approx 1 mV cm sup - sup 1) on the curve measured on the helical coil. These have recently been explained by a sudden change in the heat transfer coefficient [1]. Rarely and non-reproducibly we have also observed these drops on short samples at E approx 1 x 10 sup - sup 2 V m sup - sup 1 , (and even under 1 x 10 sup - sup 3 V m sup - sup 1). The accidental dro...

  18. Current-voltage model of LED light sources

    DEFF Research Database (Denmark)

    Beczkowski, Szymon; Munk-Nielsen, Stig

    2012-01-01

    Amplitude modulation is rarely used for dimming light-emitting diodes in polychromatic luminaires due to big color shifts caused by varying magnitude of LED driving current and nonlinear relationship between intensity of a diode and driving current. Current-voltage empirical model of light...

  19. Current-voltage curves of atomic-sized transition metal contacts: An explanation of why Au is ohmic and Pt is not

    DEFF Research Database (Denmark)

    Nielsen, S.K.; Brandbyge, Mads; Hansen, K.

    2002-01-01

    We present an experimental study of current-voltage (I-V) curves on atomic-sized Au and Pt contacts formed under cryogenic vacuum (4.2 K). Whereas I-V curves for Au are almost Ohmic, the conductance G=I/V for Pt decreases with increasing voltage, resulting in distinct nonlinear I-V behavior...

  20. Improvements in DC Current-Ioltage (I-V) Characteristics of n-GaN Schottky Diode using Metal Overlap Edge Termination

    International Nuclear Information System (INIS)

    Munir, T.; Aziz, A. A.; Abdullah, M. J.; Ain, M. F.

    2010-01-01

    Practical design of GaN Schottky diodes incorporating a field plate necessitates an understanding of how the addition of such plate affects the diode performance. In this paper, we investigated the effects on DC current-voltage (I-V) characteristics of n-GaN schottky diode by incorporating metal overlap edge termination. The thickness of the oxide film varies from 0.001 to 1 micron. Two-dimensional Atlas/Blaze simulations revealed that severe electric field crowding across the metal semiconductor contact will cause reliability concern and limit device breakdown voltage. DC current-voltage (I-V) measurements indicate that the forward currents are higher for thinner oxide film schottky diodes with metal overlap edge termination than those of unterminated schottky diodes. The forward current increased due to formation of an accumulation layer underneath the oxide layer. Extending the field plate to beyond periphery regions of schottky contact does not result in any significant increase in forward current. The new techniques of ramp oxide metal overlap edge termination have been implemented to increase the forward current of n-GaN schottky diode. In reverse bias, breakdown voltage increased with edge termination oxide up to a certain limit of oxide thickness.

  1. Thermal characteristics during hydrogen fueling process of type IV cylinder

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Sung Chan [Department of Fire and Disaster Prevention, Kyungil University, 33, Buhori, Hayang, Kyungsan 712-701 (Korea); Lee, Seung Hoon; Yoon, Kee Bong [Department of Mechanical Engineering, Chung Ang University, 221, Huksuk, Dongjak, Seoul 156-756 (Korea)

    2010-07-15

    Temperature increase during hydrogen fueling process is a significant safety concern of a high pressure hydrogen vessel. Hence, thermal characteristics of a Type IV cylinder during hydrogen filling process need to be understood. In this study, a series of experiments were conducted to quantify the temperature change of the cylinder during hydrogen filling to 35 MPa. Computational fluid dynamics (CFD) analysis was also conducted to simulate the conditions of the experiments. The results predicted by the CFD analysis show reasonable agreement with the experiments and the discrepancy between the CFD results and experimental results decrease with higher initial gas pressures. The upper and the lower parts of the vessel showed a temperature difference in the vertical direction. The upper gas temperature was higher than that of the lower part due to the buoyancy effect in the vessel. The maximum gas temperature was higher than the maximum temperature allowed in the ISO safety code (85 C) for the case in which the vessel was pressurized from 0 MPa to 35 MPa. This work contributes to the understanding of the thermal flow characteristics of the hydrogen filling process and notes that additional efforts should be made to guarantee the safety of a type IV cylinder during the hydrogen fueling process. (author)

  2. The effect of applied control strategy on the current-voltage correlation of a solid oxide fuel cell stack during dynamic operation

    Science.gov (United States)

    Szmyd, Janusz S.; Komatsu, Yosuke; Brus, Grzegorz; Ghigliazza, Francesco; Kimijima, Shinji; Ściążko, Anna

    2014-09-01

    This paper discusses the transient characteristics of the planar type SOFC cell stack, of which the standard output is 300 W. The transient response of the voltage to the manipulation of an electric current was investigated. The effects of the response and of the operating condition determined by the operating temperature of the stack were studied by mapping a current-voltage (I-V) correlation. The current-based fuel control (CBFC) was adopted for keeping the fuel utilization factor at constant while the value of the electric current was ramped at the constant rate. The present experimental study shows that the transient characteristics of the cell voltage are determined by primarily the operating temperature caused by the manipulation of the current. Particularly, the slope of the I-V curve and the overshoot found on the voltage was remarkably influenced by the operating temperature. The different values of the fuel utilization factor influence the height of the settled voltages. The CBFC has significance in determining the slope of the I-V characteristic, but the different values ofthe fuel utilization factor does not affect the slope as the operating temperature does. The CBFC essentially does not alter the amplitude of the overshoot on the voltage response, since this is dominated by the operating temperature and its change is caused by manipulating the current.

  3. The effect of applied control strategy on the current-voltage correlation of a solid oxide fuel cell stack during dynamic operation

    Directory of Open Access Journals (Sweden)

    Szmyd Janusz S.

    2014-09-01

    Full Text Available This paper discusses the transient characteristics of the planar type SOFC cell stack, of which the standard output is 300 W. The transient response of the voltage to the manipulation of an electric current was investigated. The effects of the response and of the operating condition determined by the operating temperature of the stack were studied by mapping a current-voltage (I-V correlation. The current-based fuel control (CBFC was adopted for keeping the fuel utilization factor at constant while the value of the electric current was ramped at the constant rate. The present experimental study shows that the transient characteristics of the cell voltage are determined by primarily the operating temperature caused by the manipulation of the current. Particularly, the slope of the I-V curve and the overshoot found on the voltage was remarkably influenced by the operating temperature. The different values of the fuel utilization factor influence the height of the settled voltages. The CBFC has significance in determining the slope of the I-V characteristic, but the different values ofthe fuel utilization factor does not affect the slope as the operating temperature does. The CBFC essentially does not alter the amplitude of the overshoot on the voltage response, since this is dominated by the operating temperature and its change is caused by manipulating the current.

  4. Current-voltage relationship in the auroral particle acceleration region

    Directory of Open Access Journals (Sweden)

    M. Morooka

    2004-11-01

    Full Text Available The current-voltage relationship in the auroral particle acceleration region has been studied statistically by the Akebono (EXOS-D satellite in terms of the charge carriers of the upward field-aligned current. The Akebono satellite often observed field-aligned currents which were significantly larger than the model value predicted by Knight (1973. We compared the upward field-aligned current estimated by three different methods, and found that low-energy electrons often play an important role as additional current carriers, together with the high-energy primary electrons which are expected from Knight's relation. Such additional currents have been observed especially at high and middle altitudes of the particle acceleration region. Some particular features of electron distribution functions, such as "cylindrical distribution functions" and "electron conics", have often been observed coinciding with the additional currents. They indicated time variability of the particle acceleration region. Therefore, we have concluded that the low-energy electrons within the "forbidden" region of electron phase space in the stationary model often contribute to charge carriers of the current because of the rapid time variability of the particle acceleration region. "Cylindrical distribution functions" are expected to be found below the time-varying potential difference. We statistically examined the locations of "cylindrical distribution function", and found that their altitudes are related to the location where the additional currents have been observed. This result is consistent with the idea that the low-energy electrons can also carry significant current when the acceleration region changes in time.

  5. On the current-voltage relationship in fluid theory

    Directory of Open Access Journals (Sweden)

    P. Janhunen

    1999-01-01

    Full Text Available The kinetic theory of precipitating electrons with Maxwellian source plasma yields the well-known current-voltage relationship (CV-relationship; Knight formula, which can in most cases be accurately approximated by a reduced linear formula. Our question is whether it is possible to obtain this CV-relationship from fluid theory, and if so, to what extent it is physically equivalent with the more accurate kinetic counterpart. An answer to this question is necessary before trying to understand how one could combine time-dependent and transient phenomena such as Alfvénic waves with a slowly evolving background described by the CV-relationship. We first compute the fluid quantity profiles (density, pressure etc. along a flux tube based on kinetic theory solution. A parallel potential drop accumulates plasma (and pressure below it, which explains why the current is linearly proportional to the potential drop in the kinetic theory even though the velocity of the accelerated particles is only proportional to the square root of the accelerating voltage. Electron fluid theory reveals that the kinetic theory results can be reproduced, except for different numerical constants, if and only if the polytropic index γ is equal to three, corresponding to one-dimensional motion. The convective derivative term v·∇v provides the equivalent of the "mirror force" and is therefore important to include in a fluid theory trying to describe a CV-relationship. In one-fluid equations the parallel electric field, at least in its functional form, emerges self-consistently. We find that the electron density enhancement below the potential drop disappears because the magnetospheric ions would be unable to neutralize it, and a square root CV-relationship results, in disagreement with kinetic theory and observations. Also, the potential drop concentrates just above the ionosphere, which is at odds with observations as well. To resolve this puzzle, we show that considering

  6. On the current-voltage relationship in fluid theory

    Directory of Open Access Journals (Sweden)

    P. Janhunen

    Full Text Available The kinetic theory of precipitating electrons with Maxwellian source plasma yields the well-known current-voltage relationship (CV-relationship; Knight formula, which can in most cases be accurately approximated by a reduced linear formula. Our question is whether it is possible to obtain this CV-relationship from fluid theory, and if so, to what extent it is physically equivalent with the more accurate kinetic counterpart. An answer to this question is necessary before trying to understand how one could combine time-dependent and transient phenomena such as Alfvénic waves with a slowly evolving background described by the CV-relationship. We first compute the fluid quantity profiles (density, pressure etc. along a flux tube based on kinetic theory solution. A parallel potential drop accumulates plasma (and pressure below it, which explains why the current is linearly proportional to the potential drop in the kinetic theory even though the velocity of the accelerated particles is only proportional to the square root of the accelerating voltage. Electron fluid theory reveals that the kinetic theory results can be reproduced, except for different numerical constants, if and only if the polytropic index γ is equal to three, corresponding to one-dimensional motion. The convective derivative term v·∇v provides the equivalent of the "mirror force" and is therefore important to include in a fluid theory trying to describe a CV-relationship. In one-fluid equations the parallel electric field, at least in its functional form, emerges self-consistently. We find that the electron density enhancement below the potential drop disappears because the magnetospheric ions would be unable to neutralize it, and a square root CV-relationship results, in disagreement with kinetic theory and observations. Also, the potential drop concentrates just above the ionosphere, which is at odds with observations as well. To resolve this puzzle, we show that considering

  7. Current-voltage curves for molecular junctions computed using all-electron basis sets

    International Nuclear Information System (INIS)

    Bauschlicher, Charles W.; Lawson, John W.

    2006-01-01

    We present current-voltage (I-V) curves computed using all-electron basis sets on the conducting molecule. The all-electron results are very similar to previous results obtained using effective core potentials (ECP). A hybrid integration scheme is used that keeps the all-electron calculations cost competitive with respect to the ECP calculations. By neglecting the coupling of states to the contacts below a fixed energy cutoff, the density matrix for the core electrons can be evaluated analytically. The full density matrix is formed by adding this core contribution to the valence part that is evaluated numerically. Expanding the definition of the core in the all-electron calculations significantly reduces the computational effort and, up to biases of about 2 V, the results are very similar to those obtained using more rigorous approaches. The convergence of the I-V curves and transmission coefficients with respect to basis set is discussed. The addition of diffuse functions is critical in approaching basis set completeness

  8. A dynamic Monte Carlo study of anomalous current voltage behaviour in organic solar cells

    International Nuclear Information System (INIS)

    Feron, K.; Fell, C. J.; Zhou, X.; Belcher, W. J.; Dastoor, P. C.

    2014-01-01

    We present a dynamic Monte Carlo (DMC) study of s-shaped current-voltage (I-V) behaviour in organic solar cells. This anomalous behaviour causes a substantial decrease in fill factor and thus power conversion efficiency. We show that this s-shaped behaviour is induced by charge traps that are located at the electrode interface rather than in the bulk of the active layer, and that the anomaly becomes more pronounced with increasing trap depth or density. Furthermore, the s-shape anomaly is correlated with interface recombination, but not bulk recombination, thus highlighting the importance of controlling the electrode interface. While thermal annealing is known to remove the s-shape anomaly, the reason has been not clear, since these treatments induce multiple simultaneous changes to the organic solar cell structure. The DMC modelling indicates that it is the removal of aluminium clusters at the electrode, which act as charge traps, that removes the anomalous I-V behaviour. Finally, this work shows that the s-shape becomes less pronounced with increasing electron-hole recombination rate; suggesting that efficient organic photovoltaic material systems are more susceptible to these electrode interface effects

  9. Evaluation of the Electronic Structure of Single-Molecule Junctions Based on Current-Voltage and Thermopower Measurements: Application to C60 Single-Molecule Junction.

    Science.gov (United States)

    Komoto, Yuki; Isshiki, Yuji; Fujii, Shintaro; Nishino, Tomoaki; Kiguchi, Manabu

    2017-02-16

    The electronic structure of molecular junctions has a significant impact on their transport properties. Despite the decisive role of the electronic structure, a complete characterization of the electronic structure remains a challenge. This is because there is no straightforward way of measuring electron spectroscopy for an individual molecule trapped in a nanoscale gap between two metal electrodes. Herein, a comprehensive approach to obtain a detailed description of the electronic structure in single-molecule junctions based on the analysis of current-voltage (I-V) and thermoelectric characteristics is described. It is shown that the electronic structure of the prototypical C 60 single-molecule junction can be resolved by analyzing complementary results of the I-V and thermoelectric measurement. This combined approach confirmed that the C 60 single-molecule junction was highly conductive with molecular electronic conductances of 0.033 and 0.003 G 0 and a molecular Seebeck coefficient of -12 μV K -1 . In addition, we revealed that charge transport was mediated by a LUMO whose energy level was located 0.5≈0.6 eV above the Fermi level of the Au electrode. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  10. Effect of band gap narrowing on GaAs tunnel diode I-V characteristics

    Energy Technology Data Exchange (ETDEWEB)

    Lebib, A.; Hannanchi, R. [Laboratoire d' énergie et de matériaux, LabEM-LR11ES34-Université de sousse (Tunisia); Beji, L., E-mail: lotbej_fr@yahoo.fr [Laboratoire d' énergie et de matériaux, LabEM-LR11ES34-Université de sousse (Tunisia); EL Jani, B. [Unité de Recherche sur les Hétéro-Epitaxies et Applications, Faculté des Sciences, Université de Monastir, 5019 Monastir (Tunisia)

    2016-12-01

    We report on experimental and theoretical study of current-voltage characteristics of C/Si-doped GaAs tunnel diode. For the investigation of the experimental data, we take into account the band-gap narrowing (BGN) effect due to heavily-doped sides of the tunnel diode. The BGN of the n- and p-sides of tunnel diode was measured by photoluminescence spectroscopy. The comparison between theoretical results and experimental data reveals that BGN effect enhances tunneling currents and hence should be considered to identify more accurately the different transport mechanisms in the junction. For C/Si-doped GaAs tunnel diode, we found that direct tunneling is the dominant transport mechanism at low voltages. At higher voltages, this mechanism is replaced by the rate-controlling tunneling via gap states in the forbidden gap.

  11. I-V Characteristics of a Static Random Access Memory Cell Utilizing Ferroelectric Transistors

    Science.gov (United States)

    Laws, Crystal; Mitchell, Cody; Hunt, Mitchell; Ho, Fat D.; MacLeod, Todd C.

    2012-01-01

    I-V characteristics for FeFET different than that of MOSFET Ferroelectric layer features hysteresis trend whereas MOSFET behaves same for both increasing and decreasing VGS FeFET I-V characteristics doesn't show dependence on VDS A Transistor with different channel length and width as well as various resistance and input voltages give different results As resistance values increased, the magnitude of the drain current decreased.

  12. A uniform laminar air plasma plume with large volume excited by an alternating current voltage

    Science.gov (United States)

    Li, Xuechen; Bao, Wenting; Chu, Jingdi; Zhang, Panpan; Jia, Pengying

    2015-12-01

    Using a plasma jet composed of two needle electrodes, a laminar plasma plume with large volume is generated in air through an alternating current voltage excitation. Based on high-speed photography, a train of filaments is observed to propagate periodically away from their birth place along the gas flow. The laminar plume is in fact a temporal superposition of the arched filament train. The filament consists of a negative glow near the real time cathode, a positive column near the real time anode, and a Faraday dark space between them. It has been found that the propagation velocity of the filament increases with increasing the gas flow rate. Furthermore, the filament lifetime tends to follow a normal distribution (Gaussian distribution). The most probable lifetime decreases with increasing the gas flow rate or decreasing the averaged peak voltage. Results also indicate that the real time peak current decreases and the real time peak voltage increases with the propagation of the filament along the gas flow. The voltage-current curve indicates that, in every discharge cycle, the filament evolves from a Townsend discharge to a glow one and then the discharge quenches. Characteristic regions including a negative glow, a Faraday dark space, and a positive column can be discerned from the discharge filament. Furthermore, the plasma parameters such as the electron density, the vibrational temperature and the gas temperature are investigated based on the optical spectrum emitted from the laminar plume.

  13. An analytic current-voltage model for quasi-ballistic III-nitride high electron mobility transistors

    Science.gov (United States)

    Li, Kexin; Rakheja, Shaloo

    2018-05-01

    We present an analytic model to describe the DC current-voltage (I-V) relationship in scaled III-nitride high electron mobility transistors (HEMTs) in which transport within the channel is quasi-ballistic in nature. Following Landauer's transport theory and charge calculation based on two-dimensional electrostatics that incorporates negative momenta states from the drain terminal, an analytic expression for current as a function of terminal voltages is developed. The model interprets the non-linearity of access regions in non-self-aligned HEMTs. Effects of Joule heating with temperature-dependent thermal conductivity are incorporated in the model in a self-consistent manner. With a total of 26 input parameters, the analytic model offers reduced empiricism compared to existing GaN HEMT models. To verify the model, experimental I-V data of InAlN/GaN with InGaN back-barrier HEMTs with channel lengths of 42 and 105 nm are considered. Additionally, the model is validated against numerical I-V data obtained from DC hydrodynamic simulations of an unintentionally doped AlGaN-on-GaN HEMT with 50-nm gate length. The model is also verified against pulsed I-V measurements of a 150-nm T-gate GaN HEMT. Excellent agreement between the model and experimental and numerical results for output current, transconductance, and output conductance is demonstrated over a broad range of bias and temperature conditions.

  14. Impact of exchange-correlation effects on the IV characteristics of a molecular junction

    DEFF Research Database (Denmark)

    Thygesen, Kristian Sommer

    2008-01-01

    The role of exchange-correlation effects in nonequilibrium quantum transport through molecular junctions is assessed by analyzing the IV curve of a generic two-level model using self-consistent many-body perturbation theory (second Born and GW approximations) on the Keldysh contour. It is demonst...... of dynamic correlations introduces quasiparticle (QP) scattering which in turn broadens the molecular resonances. The broadening increases strongly with bias and can have a large impact on the calculated IV characteristic....

  15. Effects of synchronous irradiance monitoring and correction of current-voltage curves on the outdoor performance measurements of photovoltaic modules

    Science.gov (United States)

    Hishikawa, Yoshihiro; Doi, Takuya; Higa, Michiya; Ohshima, Hironori; Takenouchi, Takakazu; Yamagoe, Kengo

    2017-08-01

    Precise outdoor measurement of the current-voltage (I-V) curves of photovoltaic (PV) modules is desired for many applications such as low-cost onsite performance measurement, monitoring, and diagnosis. Conventional outdoor measurement technologies have a problem in that their precision is low when the solar irradiance is unstable, hence, limiting the opportunity of precise measurement only on clear sunny days. The purpose of this study is to investigate an outdoor measurement procedure, that can improve both the measurement opportunity and precision. Fast I-V curve measurements within 0.2 s and synchronous measurement of irradiance using a PV module irradiance sensor very effectively improved the precision. A small standard deviation (σ) of the module’s maximum output power (P max) in the range of 0.7-0.9% is demonstrated, based on the basis of a 6 month experiment, that mainly includes partly sunny days and cloudy days, during which the solar irradiance is unstable. The σ was further improved to 0.3-0.5% by correcting the curves for the small variation of irradiance. This indicates that the procedure of this study enables much more reproducible I-V curve measurements than a conventional usual procedure under various climatic conditions. Factors that affect measurement results are discussed, to further improve the precision.

  16. Annealing effect on I-V characteristic of n-ZnO-p-InSe heterojunction

    Directory of Open Access Journals (Sweden)

    Kovalyuk Z. D.

    2015-12-01

    Full Text Available The article is devoted to studying of influence of vacuum low-temperature annealing on the electrical and photoelectric characteristics of n-ZnO-p-InSe heterostructure. Indium monoselenide (InSe is a semiconductor of the A3B6 group of layered compounds. The basic unit consists of two planes of metal atoms sandwiched between two planes of chalcogen atoms (Se-In-In-Se. The absence of dangling bonds on InSe cleaved surface makes it possible to use this semiconductor as a substrate for fabrication of heterostructures based on semiconductor materials with different symmetries and lattice spacings. Zinc oxide (ZnO is the most suitable material for window materials and solar cells buffer layers application due to its marvelous transparency in the range of visible region. InSe single crystals were grown by the Bridgman technique from a nonstoichiometric melt and characterized by a pronounced layered structure along the whole length of a sample. ZnO thin oxide film was formed on freshly cleaved van der Waals surface of InSe layered crystal. n-ZnO-p-InSe heterostructure was prepared by the method of high-frequency magnetron sputtering. Sensitivity spectral areas were identified by MDR-3 monochromator with a resolution of 2.6 nm/mm. The current-voltage characteristics of the n-ZnO-p-InSe heterostructures showed a clearly pronounced diode character. In the forward bias of the initial samples, the diode factor had the value 3.7 at room temperature. It is shown that vacuum low-temperature annealing reduces shunt currents of the heterojunction, which is reflected in the decrease in the values of n from 3.7 to 2.7.

  17. Ab initio I-V characteristics of short C-20 chains

    DEFF Research Database (Denmark)

    Roland, C.; Larade, B.; Taylor, Jeremy Philip

    2002-01-01

    We have calculated the I-V characteristics of short chains of C-20 molecular cages between Al and Au leads with an ab initio formalism. The results indicate that a linear chain of such molecules acts primarily as metallic nanowires. The transmission, however, depends sensitively both...

  18. Module Five: Relationships of Current, Voltage, and Resistance; Basic Electricity and Electronics Individualized Learning System.

    Science.gov (United States)

    Bureau of Naval Personnel, Washington, DC.

    This module covers the relationships between current and voltage; resistance in a series circuit; how to determine the values of current, voltage, resistance, and power in resistive series circuits; the effects of source internal resistance; and an introduction to the troubleshooting of series circuits. This module is divided into five lessons:…

  19. Current-voltage relation for thin tunnel barriers: Parabolic barrier model

    DEFF Research Database (Denmark)

    Hansen, Kim; Brandbyge, Mads

    2004-01-01

    We derive a simple analytic result for the current-voltage curve for tunneling of electrons through a thin uniform insulating layer modeled by a parabolic barrier. Our model, which goes beyond the Wentzel–Kramers–Brillouin approximation, is applicable also in the limit of highly transparant...

  20. Bidirectional current-voltage converters based on magnetostrictive/piezoelectric composites

    NARCIS (Netherlands)

    Jia, Y.; Or, S.W.; Chan, H.L.W.; Jiao, J.; Luo, H.; Van der Zwaag, S.

    2009-01-01

    We report a power supply-free, bidirectional electric current-voltage converter based on a coil-wound laminated composite of magnetostrictive alloy and piezoelectric crystal. An electric current applied to the coil induces a magnetic field, resulting in an electric voltage from the composite due to

  1. I-V characteristic of electronic transport through a quantum dot chain: The role of antiresonance

    International Nuclear Information System (INIS)

    Liu Yu; Zheng Yisong; Gong Weijiang; Lue Tianquan

    2006-01-01

    The I-V spectrum of electronic transport through a quantum dot chain is calculated by means of the nonequilibrium Green function technique. In such a system, two arbitrary quantum dots are connected with two electron reservoirs through leads. When the dot-lead coupling is very weak, a series of discrete resonant peaks in electron transmission function cause staircase-like I-V characteristic. On the contrary, in the relatively strong dot-lead coupling regime, stairs in the I-V spectrum due to resonance vanish. However, when there are some dangling quantum dots in the chain outside two leads, the antiresonance which corresponds to the zero points of electron transmission function brings about novel staircase characteristic in the I-V spectrum. Moreover, two features in the I-V spectrum arising from the antiresonance are pointed out, which are significant for possible device applications. One is the multiple negative differential conductance regions, and another is regarding to create a highly spin-polarized current through the quantum dot chain by the interplay of the resonance and antiresonance. Finally, we focus on the role that the many-body effect plays on the antiresonance. Our result is that the antiresonance remains when the electron interaction is considered to the second order approximation

  2. Characterization of three types of silicon solar cells for SEPS deep space missions. Volume 1: Current-voltage characteristics of OCLI BSF/BSR 10 ohm-cm, and BSR 2 ohm-cm cells as a function of temperature and intensity

    Science.gov (United States)

    Whitaker, A. F.; Little, S. A.; Smith, C. F., Jr.; Wooden, V. A.

    1979-01-01

    Three types of high performance silicon solar cells, BSF/BSR 10 ohm-cm, BSR 10 ohm-cm, and BSR 2 ohm-cm, were evaluated for their low temperature and low intensity performance. Sixteen cells of each type were subjected to ten temperatures and nine intensities. The BSF/BSR 10 ohm-cm cells provided the best performance at 1 solar constant and +25 C with an efficiency of 14.1% while the BSR 2 ohm-cm cells had the highest low temperature and low intensity performance with an efficiency of 22.2% at 0.04 solar constant and -170 C and the most consistent cell-to-cell characteristics.

  3. Temperature dependent I-V characteristics of an Au/n-GaAs Schottky diode analyzed using Tung’s model

    Science.gov (United States)

    Korucu, Demet; Turut, Abdulmecit; Efeoglu, Hasan

    2013-04-01

    The current-voltage (I-V) characteristics of Au/n-GaAs contacts prepared with photolithography technique have been measured in the temperature range of 80-320 K. The ideality factor and barrier height (BH) values have remained almost unchanged between 1.04 and 1.10 and at a value of about 0.79 eV at temperatures above 200 K, respectively. Therefore, the ideality factor values near unity say that the experimental I-V data are almost independent of the sample temperature, that is, contacts have shown excellent Schottky diode behavior above 200 K. An abnormal decrease in the experimental BH Φb and an increase in the ideality factor with a decrease in temperature have been observed below 200 K. This behavior has been attributed to the barrier inhomogeneity by assuming a Gaussian distribution of nanometer-sized patches with low BH at the metal-semiconductor interface. The barrier inhomogeneity assumption is also confirmed by the linear relationship between the BH and the ideality factor. According to Tung’s barrier inhomogeneity model, it has been seen that the value of σT=7.41×10-5 cm2/3 V1/3from ideality factor versus (kT)-1 curve is in close agreement with σT=7.95×10-5 cm2/3 V1/3 value from the Φeff versus (2kT)-1 curve in the range of 80-200 K. The modified Richardson ln(J0/T2)-(qσT)2(Vb/η)2/3/[2(kT)2] versus (kT)-1 plot, from Tung’s Model, has given a Richardson constant value of 8.47 A cm-2 K-2which is in very close agreement with the known value of 8.16 A cm-2 K-2 for n-type GaAs; considering the effective patch area which is significantly lower than the entire geometric area of the Schottky contact, in temperature range of 80-200 K. Thus, it has been concluded that the use of Tung’s lateral inhomogeneity model is more appropriate to interpret the temperature-dependent I-V characteristics in the Schottky contacts.

  4. Observation and investigation of a dynamic inflection point in current-voltage curves for roll-to-roll processed polymer photovoltaics

    DEFF Research Database (Denmark)

    Medford, Andrew James; Lilliedal, Mathilde Raad

    2010-01-01

    Inflection point behaviour is often observed in the current-voltage (IV) curve of polymer and organic solar cells. This phenomenon is examined in the context of flexible roll-to-roll (R2R) processed polymer solar cells in a large series of devices with a layer structure of: PET-ITO-ZnO-P3HT...... of this “photo-annealing” behaviour was further investigated by studying the effects of several key factors: temperature, illumination, and atmosphere. The results consistently showed that the inflection point is a dynamic interface phenomenon which can be removed under specific conditions. Subsequently...

  5. Thermal domains in inhomogeneous current-carrying superconductors. Current-voltage characteriscs and dynamics of domain formation after current jumps

    International Nuclear Information System (INIS)

    Bezuglyj, A.I.; Shklovskij, V.A.

    1984-01-01

    The static and dynamic behavior of thermal domains in inhomogeneous superconducting films, where the inhomogeneity behaves like a portion of the film with a reduced critical current, have been studied theoretically within the framework of the phenomenological approach, using the heat balance equation and the dependence of the superconductor critical current on temperature. Depending on the size of the inhomogeneity (local or extended) and on the relative values of parameters of the homogeneous and inhomogeneous regions, different types of current-voltage characteristics are obtained. The nonstationary problem of thermal domain formation near the inhomogeneity after a current jump has been solved, and the domain boundary (kink) dynamics at a distance from the inhomogeneity has been analyzed. A combination of the results allows one to describe the whole process of normal phase formation and its spread throughout the superconducting film

  6. Method of controlling illumination device based on current-voltage model

    DEFF Research Database (Denmark)

    2013-01-01

    The present invention relates to an illumination device comprising a number of LEDs, means for receiving an input signal, means for generating an activation signal for at least one of the LEDs based on the input signal. The illumination device comprises further means for obtaining the voltage...... and the colorimetric properties of said light emitted by LED. The present invention relates also to a method of controlling and a meted of calibrating such illumination device....... across and current through the LED and the means for generating the activation signal is adapted to generate the activating signal based on the voltage, the current and a current- voltage model related to LED. The current-voltage model defines a relationship between the current, the voltage...

  7. Investigation of disorder and its effect on electrical transport in electrochemically doped polymer devices by current-voltage and impedance spectroscopy

    Science.gov (United States)

    Rahman Khan, Motiur; Anjaneyulu, P.; Koteswara Rao, K. S. R.; Menon, R.

    2017-03-01

    We report on the analysis of temperature-dependent current-voltage characteristics and impedance measurements of electrochemically doped poly(3-methylthiophene) devices at different doping levels. The extent of doping is carefully tailored such that only the bulk-limited transport mechanism prevails. A transition from exponentially distributed trap-limited transport to trap-free space-charge-limited current is observed in current-voltage conduction upon increasing the doping. The obtained trap densities (3.2  ×  1016 cm-3 and 8.6  ×  1015 cm-3) and trap energies (31.7 meV and 16.6 meV) for different devices signify the variation in disorder with doping, which is later supported by impedance measurements. Impedance-frequency data for various devices can not be explained using the parallel resistance-capacitance (RC) model in the equivalent circuit. However, this was established by incorporating a constant phase element Q (CPE) instead of the capacitance parameter. It should be emphasized that low doping devices in particular are best simulated with two CPE elements, while the data related to other devices are fitted well with a single CPE element. It is also observed from evaluated circuit parameters that the spatial inhomogeneity and disorder are the cause of variability in different samples, which has an excellent correlation with the temperature-dependent current-voltage characteristics.

  8. Current-voltage characteristics of a gas field ion source with a supertip

    International Nuclear Information System (INIS)

    Boerret, R.; Boehringer, K.; Kalbitzer, S.

    1990-01-01

    The field ionisation properties of a supertip, a fine protrusion on top of a regular emitter, have been studied for hydrogen and the lighter rare gases. The parameter set included tip temperature, tip radius, gas temperature and gas pressure. Due to the local field enhancement at the supertip site, angular current intensities of 35 μA sr -1 and values of brightness up to 10 10 A cm -2 sr -1 have been obtained near the optimum temperature of the gas-tip system. At temperatures below this, the gas density reaches values typical for a condensed phase. In geometrical proportion, the regular tip area appears to serve as a gas supply for the supertip current. (author)

  9. Current-Voltage Characteristics of Bi-dithiolbenzene in Parallel Arrangement

    International Nuclear Information System (INIS)

    Boudjella, Aissa

    2011-01-01

    The low voltage conductance of interacting two 1,4-dithiolbenzene (DTB) molecules is investigated. The simulation results show that the electron transport can be controlled either by changing the Fermi level position E f or modifying its inter-molecular spacing d. Molecular assembly system with close interaction between DTB units, affects significantly the conductance. In addition, the position of the Fermi plays an important role in determining the current flow. Moreover, it is important to note that E f affects not only the threshold voltage V th , but also the saturation voltage V sat . When E f approaches the LUMO energy level, V th decreases, while V sat increases. To conclude, the threshold voltage and the saturation voltage depend on the Fermi level position and the inter-molecular spacing.

  10. Study on different influence of pyrimidine and phenyl on current-voltage characteristics of molecular devices

    International Nuclear Information System (INIS)

    Fu Xiaoxiao; Li Zongliang

    2011-01-01

    By using ab initio method and elastic scattering Green's function theory, electronic transport properties of symmetric tetraphenyl and non-symmetric diblock dipyrimidinyldiphenyl molecules are investigated. The numerical results show that, the tetraphenyl molecule has better electronic conductivity than the diblock molecule. The diblock molecule exhibits pronounced rectification behavior. Some molecular orbitals of the tetraphenyl molecule are delocalized into the two gold electrodes simultaneously which results in the better electronic conductivity. However, the non-symmetric structure of diblock molecule leads to the localization of the molecular orbitals, which is a disadvantage to the electronic transport. (authors)

  11. The anchoring effect on the spin transport properties and I-V characteristics of pentacene molecular devices suspended between nickel electrodes.

    Science.gov (United States)

    Caliskan, S; Laref, A

    2014-07-14

    Spin-polarized transport properties are determined for pentacene sandwiched between Ni surface electrodes with various anchoring ligands. These calculations are carried out using spin density functional theory in tandem with a non-equilibrium Green's function technique. The presence of a Se atom at the edge of the pentacene molecule significantly modifies the transport properties of the device because Se has a different electronegativity than S. Our theoretical results clearly show a larger current for spin-up electrons than for spin-down electrons in the molecular junction that is attached asymmetrically across the Se linker at one side of the Ni electrodes (in an APL magnetic orientation). Moreover, this molecular junction exhibits pronounced NDR as the bias voltage is increased from 0.8 to 1.0 V. However, this novel NDR behavior is only detected in this promising pentacene molecular device. The NDR in the current-voltage (I-V) curve results from the narrowness of the density of states for the molecular states. The feasibility of controlling the TMR is also predicted in these molecular device nanostructures. Spin-dependent transmission calculations show that the sign and strength of the current-bias voltage characteristics and the TMR could be tailored for the organic molecule devices. These molecular junctions are joined symmetrically and asymmetrically between Ni metallic probes across the S and Se atoms (at the ends of the edges of the pentacene molecule). Our theoretical findings show that spin-valve phenomena can occur in these prototypical molecular junctions. The TMR and NDR results show that nanoscale junctions with spin valves could play a vital role in the production of novel functional molecular devices.

  12. Primary Tumor Thickness is a Prognostic Factor in Stage IV Melanoma: A Retrospective Study of Primary Tumor Characteristics.

    Science.gov (United States)

    Luen, Stephen; Wong, Siew Wei; Mar, Victoria; Kelly, John W; McLean, Catriona; McArthur, Grant A; Haydon, Andrew

    2018-01-01

    Stage IV melanoma exhibits a diverse range of tumor biology from indolent to aggressive disease. Many important prognostic factors have already been identified. Despite this, the behavior of metastatic melanoma remains difficult to predict. We sought to determine if any primary tumor characteristics affect survival following the diagnosis of stage IV melanoma. All patients diagnosed with stage IV melanoma between January 2003 and December 2012 were identified from the Victorian Melanoma Service database. Retrospective chart review was performed to collect data on primary tumor characteristics (thickness, ulceration, mitotic rate, melanoma subtype, or occult primary). Known and suspected prognostic factors were additionally collected (time to diagnosis of stage IV disease, age, sex, stage, receipt of chemotherapy, and era of recurrence). The effect of primary tumor characteristics on overall survival from the date of diagnosis of stage IV disease was assessed. A total of 227 patients with a median follow-up of 5 years from diagnosis of stage IV disease were identified. Median overall survival of the cohort was 250 days.Of the primary tumor characteristics assessed, only tumor thickness affected survival from diagnosis of stage IV disease, hazard ratio=1.09 (1.02 to 1.16), P=0.008. This remained significant in multivariate analysis, P=0.007. Other primary tumor characteristics did not significantly influence survival. Primary tumor thickness is a significant prognostic factor in stage IV melanoma. Our data suggest that the biology of the primary melanoma may persist to influence the behavior of metastatic disease.

  13. Analysis of IV characteristics of solar cells made of hydrogenated amorphous, polymorphous and microcrystalline silicon

    International Nuclear Information System (INIS)

    Hamadeh, H.

    2009-03-01

    The IV characteristics of pin solar cells made of amorphous, polymorphous and microcrystalline silicon were investigated. The temperature dependence was measured in the temperature range between 150 K and 395 K. This range covers the most terrestrial applications condition. Using simplex procedure, the IV parameter of the cells were deduce using line fitting. It has been shown that polymorphous silicon shows electrical properties that are close to properties of microcrystalline silicon but as it is well known, polymorphous silicon shows higher absorption similar to amorphous silicon. The polymorphous silicon solar cells showed higher efficiencies, lower shunting and higher filling factors. In the above mentioned temperature range, polymorphous silicon is the better material for the manufacturing of thin film hydrogenated silicon pin solar cells. More investigations concerning the structural properties are necessary to make stronger conclusions in regards to the stability of the material, what we hope to do in the future. (author)

  14. Current diffusion in a superconduting composite with a smeared I-V characteristic

    International Nuclear Information System (INIS)

    Keilin, V.E.; Romanovskii, V.R.

    1992-01-01

    Results are presented from numerical and analytical calculations of current injection into a superconducting composite of circular cross section with homogeneous properties throughout the cross section. A wire with an I-V characteristic approximated by an exponential dependence is examined. In the numerical solution, the joint occurrence of thermal and electromagnetic processes is taken into account. The calculations carried out for different current injection rates, parameters of the I-V characteristics, and heat transfer coefficients revealed: the existence of a characteristic limit current, below which the wire remains in a superconducting state after termination of current injection and above which the wire undergoes a transition to the normal state; this is somewhat below the cut-off current; the existence of a finite current at any small yet finite surface heat transfer coefficient. An analytical solution of the problem, based of the derived stability criterion, has made if possible to write an approximate relation between the limit currents and the initial parameters. Unlike previously reported results, this study takes into account the tolerable overheating of the wire, which depends on the depth of current flow, the specific heat of the wire, and its thermal and electrical conductivities

  15. YBCO single crystals I-V characteristics nonlinearity and Nelson-Kosterlitz jump

    International Nuclear Information System (INIS)

    Kuzmichev, N.D.; Vasyutin, M.A.; Golovashkin, A.I.

    2007-01-01

    Temperature dependences of I-V characteristics and voltage harmonics V n (T) (n = 2, 3, ...) have been investigated in magnetic fields up to 200 Oe for single crystals YBa 2 Cu 3 O 7-x . It was shown that V n (T) had asymmetric peak form with maximum at T* = 92.0 K. Amplitudes of V n (T) were decreased in magnetic fields. The results were explained on the base of the Berezinskii-Kosterlitz-Thouless (BKT) transition model. It was shown that T* coincided with the BKT transition temperature T BKT . The asymmetric peaks of V n (T) are a consequence of the Nelson-Kosterlitz jump

  16. Ion exchange characteristics of cerium (IV) and Tin(IV) antimonates and their use in rad waste treatment

    Energy Technology Data Exchange (ETDEWEB)

    Elnaggar, I M; Abdel Hamid, M M; Elabsy, M A; Aly, H F [Hot lab. centre, atomic energy authority, Cairo, (Egypt)

    1995-10-01

    Cerium (IV) and Tin(IV) antimonates cation exchangers have been synthesized. The products were characterized by powdered X-ray diffraction, thermal analysis and infrared spectrometry. The data of the distribution coefficients showed that the selectivity decreased in the order Eu{sup 3+}>Co{sup 2+}>Sr{sup 2+}>Cs{sup +} for both materials. Besides, the drying temperature of the matrices have a profound effect on their ion exchange capacities. Moreover, the obtained results of the effect of gamma radiation on the ion exchange behaviour of the samples showed that a slight decrease of the capacity and the distribution coefficient values with increasing the absorbed dose. 2 figs., 4 tabs.

  17. Current-voltage curve of sodium channels and concentration dependence of sodium permeability in frog skin

    DEFF Research Database (Denmark)

    Fuchs, W; Larsen, Erik Hviid; Lindemann, B

    1977-01-01

    1. The inward facing membranes of in vitro frog skin epithelium were depolarized with solutions of high K concentration. The electrical properties of the epithelium are then expected to be governed by the outward facing, Na-selective membrane.2. In this state, the transepithelial voltage (V...... was recorded. This procedure was repeated after blocking the Na channels with amiloride to obtain the current-voltage curve of transmembrane and paracellular shunt pathways. The current-voltage curve of the Na channels was computed by subtracting the shunt current from the total current.4. The instantaneous I...... of the inward facing membranes but reflects the true behaviour of P(Na).6. The steady-state P(Na) at a given (Na)(o) is smaller than the transient P(Na) observed right after a stepwise increase of (Na)(o) to this value. The time constant of P(Na)-relaxation is in the order of seconds.7. In conclusion, Na...

  18. Overall system description and safety characteristics of Prototype Gen IV Sodium Cooled Fast Reactor in Korea

    International Nuclear Information System (INIS)

    Yoo, Jae Woon; Chang, Jin Wook; Lim, Jae Yong; Cheon, Jin Sik; Lee, Tae Ho; Kim, Sung Kyun; Lee, Kwi Lim; Joo, Hyung Kook

    2016-01-01

    The Prototype Gen IV sodium cooled fast reactor (PGSFR) has been developed for the last 4 years, fulfilling the technology demonstration of the burning capability of transuranic elements included in light water reactor spent nuclear fuel. The PGSFR design has been focused on the robustness of safety systems by enhancing inherent safety characteristics of metal fuel and strengthening passive safety features using natural circulation and thermal expansion. The preliminary safety information document as a major outcome of the first design phase of PGSFR development was issued at the end of 2015. The project entered the second design phase at the beginning of 2016. This paper summarizes the overall structures, systems, and components of nuclear steam supply system and safety characteristics of the PGSFR. The research and development activities to demonstrate the safety performance are also briefly introduced in the paper

  19. Overall System Description and Safety Characteristics of Prototype Gen IV Sodium Cooled Fast Reactor in Korea

    Directory of Open Access Journals (Sweden)

    Jaewoon Yoo

    2016-10-01

    Full Text Available The Prototype Gen IV sodium cooled fast reactor (PGSFR has been developed for the last 4 years, fulfilling the technology demonstration of the burning capability of transuranic elements included in light water reactor spent nuclear fuel. The PGSFR design has been focused on the robustness of safety systems by enhancing inherent safety characteristics of metal fuel and strengthening passive safety features using natural circulation and thermal expansion. The preliminary safety information document as a major outcome of the first design phase of PGSFR development was issued at the end of 2015. The project entered the second design phase at the beginning of 2016. This paper summarizes the overall structures, systems, and components of nuclear steam supply system and safety characteristics of the PGSFR. The research and development activities to demonstrate the safety performance are also briefly introduced in the paper.

  20. Hole-transport limited S-shaped I-V curves in planar heterojunction organic photovoltaic cells

    Science.gov (United States)

    Zhang, Minlu; Wang, Hui; Tang, C. W.

    2011-11-01

    Current-voltage (I-V) characteristics of planar heterojunction organic photovoltaic cells based on N',N'-Di-[(1-naphthyl)-N',N'-diphenyl]-1,1'-biphenyl)-4,4'-diamine (NPB) and C60 are investigated. Through variation of the layer thickness and composition, specifically chemical doping NPB with MoOx, we show that the hole-transport limitation in the NPB layer is the determining factor in shaping the I-V characteristics of NPB/C60 cells.

  1. The i-V curve characteristics of burner-stabilized premixed flames: detailed and reduced models

    KAUST Repository

    Han, Jie

    2016-07-17

    The i-V curve describes the current drawn from a flame as a function of the voltage difference applied across the reaction zone. Since combustion diagnostics and flame control strategies based on electric fields depend on the amount of current drawn from flames, there is significant interest in modeling and understanding i-V curves. We implement and apply a detailed model for the simulation of the production and transport of ions and electrons in one-dimensional premixed flames. An analytical reduced model is developed based on the detailed one, and analytical expressions are used to gain insight into the characteristics of the i-Vcurve for various flame configurations. In order for the reduced model to capture the spatial distribution of the electric field accurately, the concept of a dead zone region, where voltage is constant, is introduced, and a suitable closure for the spatial extent of the dead zone is proposed and validated. The results from the reduced modeling framework are found to be in good agreement with those from the detailed simulations. The saturation voltage is found to depend significantly on the flame location relative to the electrodes, and on the sign of the voltage difference applied. Furthermore, at sub-saturation conditions, the current is shown to increase linearly or quadratically with the applied voltage, depending on the flame location. These limiting behaviors exhibited by the reduced model elucidate the features of i-V curves observed experimentally. The reduced model relies on the existence of a thin layer where charges are produced, corresponding to the reaction zone of a flame. Consequently, the analytical model we propose is not limited to the study of premixed flames, and may be applied easily to others configurations, e.g.~nonpremixed counterflow flames.

  2. Theoretical Current-Voltage Curve in Low-Pressure Cesium Diode for Electron-Rich Emission

    Science.gov (United States)

    Coldstein, C. M.

    1964-01-01

    Although considerable interest has been shown in the space-charge analysis of low-pressure (collisionless case) thermionic diodes, there is a conspicuous lack in the presentation of results in a way that allows direct comparison with experiment. The current-voltage curve of this report was, therefore, computed for a typical case within the realm of experimental interest. The model employed in this computation is shown in Fig. 1 and is defined by the limiting potential distributions [curves (a) and (b)]. Curve (a) represents the potential V as a monotonic function of position with a slope of zero at the anode; curve (b) is similarly monotonic with a slope of zero at the cathode. It is assumed that by a continuous variation of the anode voltage, the potential distributions vary continuously from one limiting form to the other. Although solutions for infinitely spaced electrodes show that spatically oscillatory potential distributions may exist, they have been neglected in this computation.

  3. CURRENT-VOLTAGE CURVES FOR TREATING EFFLUENT CONTAINING HEDP: DETERMINATION OF THE LIMITING CURRENT

    Directory of Open Access Journals (Sweden)

    T. Scarazzato

    2015-12-01

    Full Text Available Abstract Membrane separation techniques have been explored for treating industrial effluents to allow water reuse and component recovery. In an electrodialysis system, concentration polarization causes undesirable alterations in the ionic transportation mechanism. The graphic construction of the current voltage curve is proposed for establishing the value of the limiting current density applied to the cell. The aim of this work was to determine the limiting current density in an electrodialysis bench stack, the function of which was the treatment of an electroplating effluent containing HEDP. For this, a system with five compartments was used with a working solution simulating the rinse waters of HEDP-based baths. The results demonstrated correlation between the regions defined by theory and the experimental data.

  4. Epidemiology, Clinical Characteristics, and Associations for Rome IV Functional Nausea and Vomiting Disorders in Adults.

    Science.gov (United States)

    Aziz, Imran; Palsson, Olafur S; Whitehead, William E; Sperber, Ami D; Simrén, Magnus; Törnblom, Hans

    2018-05-29

    Functional nausea and vomiting disorders (FNVDs) are classified as chronic nausea and vomiting syndrome (CNVS) or cyclic vomiting syndrome (CVS) - CVS includes cannabinoid hyperemesis syndrome. We investigated the population prevalence of FNVDs, their characteristics, and associated factors. In the year 2015, an Internet cross-sectional health survey was completed by 5931 adults in the general populations of 3 English-speaking countries; 2100 participants were in the United States, Canada, or the United Kingdom. Quota-based sampling was used to generate demographically balanced and population-representative samples. The survey collected data on demographics, healthcare visits, medications, somatic symptom severity, quality of life, and symptom-based diagnostic criteria for Rome IV FNVDs as well as for irritable bowel syndrome and functional dyspepsia. Subsequent comparisons were made between Rome IV FNVD subjects and individuals without FNVDs (controls). Overall, 2.2% of the population (n=131) fulfilled symptom-based diagnostic criteria for Rome IV FNVDs - the United States (3%) had a greater prevalence than Canada (1.9%) or the United Kingdom (1.8%) (P=.02). The prevalence of CNVS was similar among the countries, ranging from 0.8% to 1.2%. However, the prevalence of CVS was higher in the United States (2%) than in Canada (0.7%) or the United Kingdom (1%) (P=.03). The proportion of subjects with CVS taking cannabis did not differ significantly among countries (P=.31), although the 7 cases of cannabinoid hyperemesis syndrome were in the United States. A significantly higher proportion of subjects with CVS reported a compulsive need for hot water bathing to alleviate emetic symptoms than subjects with CNVS (44% vs. 19%, P=.03); this behaviour was independent of cannabis but augmented by its use. Subjects with FNVDs had significantly greater health impairment and health care utilization than controls. On multivariate analysis, independent factors associated with FNVDs

  5. Polarization Characteristics of Zebra Patterns in Type IV Solar Radio Bursts

    International Nuclear Information System (INIS)

    Kaneda, K.; Misawa, H.; Tsuchiya, F.; Obara, T.; Iwai, K.; Katoh, Y.; Masuda, S.

    2017-01-01

    The polarization characteristics of zebra patterns (ZPs) in type IV solar bursts were studied. We analyzed 21 ZP events observed by the Assembly of Metric-band Aperture Telescope and Real-time Analysis System between 2010 and 2015 and identified the following characteristics: a degree of circular polarization (DCP) in the range of 0%–70%, a temporal delay of 0–70 ms between the two circularly polarized components (i.e., the right- and left-handed components), and dominant ordinary-mode emission in about 81% of the events. For most events, the relation between the dominant and delayed components could be interpreted in the framework of fundamental plasma emission and depolarization during propagation, though the values of DCP and delay were distributed across wide ranges. Furthermore, it was found that the DCP and delay were positively correlated (rank correlation coefficient R = 0.62). As a possible interpretation of this relationship, we considered a model based on depolarization due to reflections at sharp density boundaries assuming fundamental plasma emission. The model calculations of depolarization including multiple reflections and group delay during propagation in the inhomogeneous corona showed that the DCP and delay decreased as the number of reflections increased, which is consistent with the observational results. The dispersive polarization characteristics could be explained by the different numbers of reflections causing depolarization.

  6. Polarization Characteristics of Zebra Patterns in Type IV Solar Radio Bursts

    Energy Technology Data Exchange (ETDEWEB)

    Kaneda, K.; Misawa, H.; Tsuchiya, F.; Obara, T. [Planetary Plasma and Atmospheric Research Center, Tohoku University, Sendai, Miyagi 980-8578 (Japan); Iwai, K. [National Institute of Information and Communications Technology, 4-2-1, Nukui-Kitamachi, Koganei, Tokyo 184-8795 (Japan); Katoh, Y. [Department of Geophysics, Graduate School of Science, Tohoku University, Sendai, Miyagi 980-8578 (Japan); Masuda, S., E-mail: k.kaneda@pparc.gp.tohoku.ac.jp [Institute for Space—Earth Environmental Research, Nagoya University, Nagoya, Aichi 464-8601 (Japan)

    2017-06-10

    The polarization characteristics of zebra patterns (ZPs) in type IV solar bursts were studied. We analyzed 21 ZP events observed by the Assembly of Metric-band Aperture Telescope and Real-time Analysis System between 2010 and 2015 and identified the following characteristics: a degree of circular polarization (DCP) in the range of 0%–70%, a temporal delay of 0–70 ms between the two circularly polarized components (i.e., the right- and left-handed components), and dominant ordinary-mode emission in about 81% of the events. For most events, the relation between the dominant and delayed components could be interpreted in the framework of fundamental plasma emission and depolarization during propagation, though the values of DCP and delay were distributed across wide ranges. Furthermore, it was found that the DCP and delay were positively correlated (rank correlation coefficient R = 0.62). As a possible interpretation of this relationship, we considered a model based on depolarization due to reflections at sharp density boundaries assuming fundamental plasma emission. The model calculations of depolarization including multiple reflections and group delay during propagation in the inhomogeneous corona showed that the DCP and delay decreased as the number of reflections increased, which is consistent with the observational results. The dispersive polarization characteristics could be explained by the different numbers of reflections causing depolarization.

  7. How the Change in IBS Criteria From Rome III to Rome IV Impacts on Clinical Characteristics and Key Pathophysiological Factors.

    Science.gov (United States)

    Aziz, Imran; Törnblom, Hans; Palsson, Olafur S; Whitehead, William E; Simrén, Magnus

    2018-06-08

    The diagnostic criteria for irritable bowel syndrome (IBS) have recently been updated from Rome III to Rome IV. Whereas in Rome III a diagnosis of IBS entailed chronic abdominal pain or discomfort at least 3 days per month, in Rome IV the term discomfort has been removed and the frequency of abdominal pain increased to at least 1 day per week. We examined how this change in IBS criteria impacts on clinical characteristics and pathophysiological factors. A total of 542 Swedish subjects with Rome III IBS completed a baseline questionnaire enquiring for the number of abdominal pain days in the last 10 days; this was subsequently used as a surrogate marker to identify Rome IV IBS, in that (a) those with 0 or 1 day of pain were classed as Rome IV-negative, and (b) those with ≥2 days of pain were classed as Rome IV-positive. Comparisons were made between Rome IV-positive and -negative IBS groups for demographics, IBS subtype, gastrointestinal and psychological symptoms, somatisation, fatigue, disease-specific quality of life, rectal sensitivity, and oro-anal transit time. Overall, 85% of Rome III IBS patients fulfilled the Rome IV criteria for IBS, but 15% did not. Rome IV-positive subjects were significantly more likely to be female, have poorer quality of life, greater pain severity, bloating, somatisation, fatigue, and rectal sensitivity than Rome IV-negative subjects. There were no differences in severity of anxiety or depression, IBS subtypes, bowel habit dissatisfaction, or oro-anal transit time. Finally, increasing number of pain days correlated positively with symptoms and visceral hypersensitivity. Most Rome III-positive IBS patients seeking healthcare fulfil the Rome IV IBS criteria. They constitute a more severe group than those who lose their IBS diagnosis.

  8. A general modeling method for I-V characteristics of geometrically and electrically configured photovoltaic arrays

    International Nuclear Information System (INIS)

    Liu Guangyu; Nguang, Sing Kiong; Partridge, Ashton

    2011-01-01

    Highlights: → A novel and general method is proposed for modeling PV arrays or modules. → A robust algorithm is used for the first time to improve the convergence to solution. → Auxiliary functions in other general methods are not compulsory in our method. → It is novel that geometric configuration is also incorporated. → A case study is performed to show the approach's advantages and unique features. - Abstract: A general method for modeling typical photovoltaic (PV) arrays and modules is proposed to find the exact current and voltage relationship of PV arrays or modules of geometrically and electrically different configurations. Nonlinear characteristic equations of electrical devices in solar array or module systems are numerically constructed without adding any virtual electrical components. Then, a robust damped Newton method is used to find exact I-V relationship of these general nonlinear equations, where the convergence is guaranteed. The model can deal with different mismatch effects such as different configurations of bypass diodes, and partial shading. Geometry coordinates of PV components are also considered to facilitate the modeling of the actual physical configuration. Simulation of a PV array with 48 modules, partially shaded by a concrete structure, is performed to verify the effectiveness and advantages of the proposed method.

  9. Statistically Modeling I-V Characteristics of CNT-FET with LASSO

    Science.gov (United States)

    Ma, Dongsheng; Ye, Zuochang; Wang, Yan

    2017-08-01

    With the advent of internet of things (IOT), the need for studying new material and devices for various applications is increasing. Traditionally we build compact models for transistors on the basis of physics. But physical models are expensive and need a very long time to adjust for non-ideal effects. As the vision for the application of many novel devices is not certain or the manufacture process is not mature, deriving generalized accurate physical models for such devices is very strenuous, whereas statistical modeling is becoming a potential method because of its data oriented property and fast implementation. In this paper, one classical statistical regression method, LASSO, is used to model the I-V characteristics of CNT-FET and a pseudo-PMOS inverter simulation based on the trained model is implemented in Cadence. The normalized relative mean square prediction error of the trained model versus experiment sample data and the simulation results show that the model is acceptable for digital circuit static simulation. And such modeling methodology can extend to general devices.

  10. Current-voltage analysis of the record-efficiency CuGaSe2 solar cell: Application of the current separation method and the interface recombination model

    International Nuclear Information System (INIS)

    Saad, M.; Kasis, A.

    2011-01-01

    Current-voltage (j-V) characteristics of the record-efficiency CuGaSe 2 solar cell measured under several illumination levels are analyzed using a two-diode equation for a more accurate description of cell behavior. The contribution of each diode to the total cell j-V characteristic under illumination was estimated using the current separation method presented recently. This is performed in an effort to identify the distinctive features of this record-efficiency cell which have led to the up-to-date highest open circuit voltage of V o c = 946 mV and fill factor of FF = 66.5% for CuGaSe 2 solar cells. Furthermore, the interface recombination component of the cell current under illumination is quantitatively discussed applying the interface recombination model presented earlier. (author)

  11. A Contribution To The Development And Analysis Of A Combined Current-Voltage Instrument Transformer By Using Modern CAD Methods

    International Nuclear Information System (INIS)

    Chundeva-Blajer, Marija M.

    2004-01-01

    The principle aim and task of the thesis is the analysis and development of 20 kV combined current-voltage instrument transformer (CCVIT) by using modern CAD techniques. CCVIT is a complex electromagnetic system comprising of four windings and two magnetic cores in one insulation housing for simultaneous transformation of high voltages and currents to measurable signal values by standard instruments. The analytical design methods can be applied on simple electromagnetic configurations, which is not the case with the CCVIT. There is mutual electromagnetic influence between the voltage measurement core (VMC) and the current measurement core (CMC). After the analytical CCVIT design had been done, exact determination of its metrological characteristics has been accomplished by using the numerical finite element method implemented in the FEM-3D program package. The FEM-3D calculation is made in 19 cross-sectional layers of the z-axis of the CCVIT three-dimensional domain. By FEM-3D application the three-dimensional CCVIT magnetic field distribution is derived. This is the basis for calculation of the initial metrological characteristics of the CCVIT (VMC is accuracy class 3 and CMC is accuracy class 1). By using the stochastic optimization technique based on genetic algorithm the CCVIT optimal design is achieved. The objective function is the minimum of the metrological parameters (VIM voltage error and CMC current error). There are I I independent input variables during the optimization process by which the optimal project is derived. The optimal project is adapted for realization of a prototype and the optimized project is derived. Full comparative analysis of the metrological and the electromagnetic characteristics of the three projects is accomplished. By application of the program package MATLAB/SIMULINK the CCVIT transient phenomena is analyzed for different regimes in the three design projects. In the Instrument Transformer Factory of EMO A. D.-Ohrid a CCVIT

  12. Preparation, spectrometric analysis and determination of the electrochemical transport characteristics of uranium (IV) in aqueous systems

    International Nuclear Information System (INIS)

    Schwarzer, W.G.

    1985-01-01

    A process for the quantitative development of uranium-(IV) solutions in nitric and perchloric acid media was developed. After appropriate concentration setting of the solutions, the conductivity of the uranium (IV) in the dependence on concentration were analysed. The conversion of the measuring results on the standard system water was done by means of a conductivity theory; this allows a comparison with the conductivity data of other ions. The conductivity calculated, at an ion strength I tending to zero, provided the suitable data for the ion mobility and the transference number. (orig./PW) [de

  13. On the I-V characteristic in the non-linear tenary mixture model for polycrystalline semiconductors

    International Nuclear Information System (INIS)

    Nguyen Van Lien; Nguyen Hoai Nam

    2000-08-01

    A simple expression for the voltage dependence of grain-boundary potential barrier heights is proposed and the Effective Medium Approximation is extended for calculating the I-V characteristic in tenary mixtures of highly non-linear circuit elements. Numerical calculations are performed for the case of polycrystalline semiconductors, such as ZnO-based varistors, where the thermoionic emission is believed to be the dominant mechanism for the electric conduction across double Schottky barriers at room temperature. (author)

  14. Manifestation of π-contacts in magnetic field dependence of I-V characteristics for proximity-type 2D Josephson junction array

    International Nuclear Information System (INIS)

    Rivera, V.A.G.; Sergeenkov, S.; Marega, E.; Araujo-Moreira, F.M.

    2009-01-01

    Results on the temperature and magnetic field dependence of current-voltage characteristics (CVC) are presented for SNS-type 2D ordered array of Nb-Cu 0.95 Al 0.05 -Nb junctions. The critical current I C (T,H) and the power exponent a(T,H)=1+Φ 0 I C (T,H)/2k B T of the nonlinear CVC law V=R[I-I C (T,H)] a(T,H) are found to have a maximum at non-zero value of applied magnetic field H p =225 Oe, which is attributed to manifestation of π-type Josephson contacts in our sample.

  15. Monitoring and Fault Detection in Photovoltaic Systems Based On Inverter Measured String I-V Curves

    DEFF Research Database (Denmark)

    Spataru, Sergiu; Sera, Dezso; Kerekes, Tamas

    2015-01-01

    Most photovoltaic (PV) string inverters have the hardware capability to measure at least part of the current-voltage (I-V) characteristic curve of the PV strings connected at the input. However, this intrinsic capability of the inverters is not used, since I-V curve measurement and monitoring...... functions are not implemented in the inverter control software. In this paper, we aim to show how such a functionality can be useful for PV system monitoring purposes, to detect the presence and cause of power-loss in the PV strings, be it due to shading, degradation of the PV modules or balance......-of-system components through increased series resistance losses, or shunting of the PV modules. To achieve this, we propose and experimentally demonstrate three complementary PV system monitoring methods that make use of the I-V curve measurement capability of a commercial string inverter. The first method is suitable...

  16. Visible photoenhanced current-voltage characteristics of Au : TiO2 nanocomposite thin films as photoanodes

    International Nuclear Information System (INIS)

    Naseri, N; Amiri, M; Moshfegh, A Z

    2010-01-01

    In this investigation, the effect of annealing temperature and concentration of gold nanoparticles on the photoelectrochemical properties of sol-gel deposited Au : TiO 2 nanocomposite thin films is studied. Various gold concentrations have been added to the TiO 2 thin films and their properties are compared. All the deposited samples are annealed at different temperatures. The optical density spectra of the films show the formation of gold nanoparticles in the films. The optical bandgap energy of the Au : TiO 2 films decreases with increasing Au concentration. The crystalline structure of the nanocomposite films is studied by x-ray diffractometry indicating the formation of gold nanocrystals in the anatase TiO 2 nanocrystalline thin films. X-ray photoelectron spectroscopy reveals that the presence of gold in the metallic state and the formation of TiO 2 are stoichiometric. The photoelectrochemical properties of the Au : TiO 2 samples are characterized using a compartment cell containing H 2 SO 4 and KOH as cathodic and anodic electrolytes, respectively. It is found that the addition of Au nanoparticles in TiO 2 films enhances the photoresponse of the layer and the addition of gold nanocrystals with an optimum value of 5 mol% resulted in the highest photoelectrochemical activity. Moreover, the photoresponse of the samples is also enhanced with an increase in the annealing temperature.

  17. Adsorption behavior and current-voltage characteristics of CdSe nanocrystals on hydrogen-passivated silicon

    DEFF Research Database (Denmark)

    Walzer, Karsten; Quaade, Ulrich; Ginger, D.S.

    2002-01-01

    Using scanning tunneling microscopy and spectroscopy we have studied both the geometric distribution and the conduction properties of organic shell capped CdSe nanocrystals adsorbed on hydrogen-passivated Si(100). At submonolayer concentrations, the nanocrystal distribution on the surface was found...... found that the current through the MIS junction is limited by the nanocrystals only in one bias direction, while in the other bias direction the current is limited by the semiconducting substrate. This property may be of relevance for the construction of hybrid electronic devices combining semiconductor...

  18. Effect of the periphery of metal-semiconductor contacts with Schottky barriers on their static current-voltage characteristic

    International Nuclear Information System (INIS)

    Torkhov, N. A.

    2010-01-01

    Kelvin probe atomic-force microscopy of the electrostatic surface potential of gold Schottky contacts on n-GaAs showed that there is an extended transition area (halo) (tens of micrometers) around contacts in which the surface potential varies from the n-GaAs free surface potential to the gold contact surface potential. The contact potential and its distribution in the surrounding halo are controlled by the contact structure. The study of spreading currents showed that there is a high-conductance area (periphery) around the contact perimeter due to strong electric fields of the halo, which causes leakage currents. The conductivity of the main contact area is caused by 100- to 200-nm local areas with higher and lower conducting abilities. Mesa formation around contacts causes a decrease in the work function, a decrease in the halo extent and electric field strength, which is accompanied by spreading and decreasing of the peripheral area conductance. This results in disappearance of leakage currents and a decrease in the ideality index. In contrast, protection of the peripheral area by a SiO 2 insulating film 0.5 μm thick increases the work function, which is accompanied by the formation of potential lobes around the contact in two mutually perpendicular crystallographic directions. A stronger penetration of halo electric fields into the contact area results in an increase in the ideality index and disappearance of high-conductance peripheral area and leakage currents. The difference between the electrical properties of the periphery, gold grains, and their boundaries controls the contact switching mechanism when applying forward or reverse biases.

  19. Theoretical investigation on current-voltage characteristics in all-carbon molecular device with different contact geometries

    International Nuclear Information System (INIS)

    Ye Fuqiu; Fan Zhiqiang; He Jun; Peng Jun; Tang Liming

    2012-01-01

    Applying nonequilibrium Green's functions in combination with the first-principles density-functional theory, we investigate electronic transport properties of an all-carbon molecular device consisting of one phenalenyl molecule and two zigzag graphene nanoribbons. The results show that the electronic transport properties are strongly dependent on the contact geometry and device's currents can drop obviously when the connect sites change from second-nearest sites from the central atom of the molecule (S site) to third-nearest sites from the central atom of the molecule (T site). More importantly, the negative differential resistance behavior is only observed on the negative bias region when the molecule connects the graphene nanoribbons through two T sites.

  20. The current-voltage relation of a pore and its asymptotic behavior in a Nernst-Planck model

    Directory of Open Access Journals (Sweden)

    Marius Birlea

    2012-08-01

    Full Text Available A model for current-voltage nonlinearity and asymmetry is a good starting point for explaining the electrical behavior of the nanopores in synthetic or biological membranes. Using a Nernst-Planck model, we found three behaviors for the current density in a membrane's pore as a function of voltage: a quasi-ohmic, slow rising linear current at low voltages, a nonlinear current at intermediate voltages, and a non-ohmic, fast rising linear current at large voltages. The slope of the quasi-ohmic current depends mainly on the height of energy barrier inside the pore, w, through an exponential term, ew. The magnitude of the non-ohmic linear current is controlled by the potential energy gradient at the pore entrance, w/r. The current-voltage relation is asymmetric if the ion's potential energy inside the pore has an asymmetric triangular profile. The model has only two assumed parameters, the energy barrier height, w, and the relative size of the entrance region of the pore, r, which is a useful feature for fitting and interpreting experimental data.

  1. Asymptotic and numerical prediction of current-voltage curves for an organic bilayer solar cell under varying illumination and comparison to the Shockley equivalent circuit

    KAUST Repository

    Foster, J. M.; Kirkpatrick, J.; Richardson, G.

    2013-01-01

    In this study, a drift-diffusion model is used to derive the current-voltage curves of an organic bilayer solar cell consisting of slabs of electron acceptor and electron donor materials sandwiched together between current collectors. A simplified

  2. Development of methods for measuring materials nuclear characteristics, Phases, I, II, II and IV

    International Nuclear Information System (INIS)

    Maglic, R.

    1963-04-01

    This report contains the following phases of the project 'measurement of nuclear characteristics of reactor materials': nuclear performances of the neutron chopper; method for measuring total effective cross sections by transmission method on the chopper; review of methods for measuring activation cross sections; measurement of neutron spectra of the RA reactor and measurement of total effective cross section of gold by using the chopper

  3. Improvement of the decay heat removal characteristics of the generation IV gas-cooled fast reactor

    International Nuclear Information System (INIS)

    Epiney, A. S.

    2010-09-01

    The majority of NPPs worldwide are currently light water reactors, using ordinary water as both coolant and moderator. (...) For the longer-term future, viz. beyond the year 2030, Research and Development is currently ongoing on Generation IV NPPs, aimed at achieving closure of the nuclear fuel cycle, and hence both drastically improved utilization of fuel resources and minimization of long-lived radioactive wastes. Since the very beginning of the international cooperation on Generation IV, viz. the year 2000, the main research interest in Europe as regards the advanced fast-spectrum systems needed for achieving complete fuel cycle closure, has been for the Sodium-cooled Fast Reactor (SFR). However, the Gas-cooled Fast Reactor (GFR) is currently considered as the main back-up solution. Like the SFR, the GFR is an efficient breeder, also able to work as iso-breeder using simply natural uranium as feed and producing waste which is predominantly in the form of fission products. The main drawback of the GFR is the difficulty to evacuate decay heat following a loss-of-coolant accident (LOCA) due to the low thermal inertia of the core, as well as to the low coolant density. The present doctoral research focuses on the improvement of decay heat removal (DHR) for the Generation-IV GFR. The reference GFR system design considered in the thesis is the 2006 CEA concept, with a power of 2400 MWth. The CEA 2006 DHR strategy foresees, in all accidental cases (independent of the system pressure), that the reactor is shut down. For high pressure events, dedicated DHR loops with blowers and heat exchangers are designed to operate when the power conversion system cannot be used to provide acceptable core temperatures under natural convection conditions. For depressurized events, the strategy relies on a dedicated small containment (called the guard containment) providing an intermediate back-up pressure. The DHR blowers, designed to work under these pressure conditions, need to be

  4. Improvement of the decay heat removal characteristics of the generation IV gas-cooled fast reactor

    International Nuclear Information System (INIS)

    Epiney, A.S.

    2010-01-01

    Gas cooling in nuclear power plants (NPPs) has a long history, the corresponding reactor types developed in France, the UK and the US having been thermal neutron spectrum systems using graphite as the moderator. The majority of NPPs worldwide, however, are currently light water reactors, using ordinary water as both coolant and moderator. These NPPs - of the so-called second generation - will soon need replacement, and a third generation is now being made available, offering increased safety while still based on light water technology. For the longer-term future, viz. beyond the year 2030, R and D is currently ongoing on Generation IV NPPs, aimed at achieving closure of the nuclear fuel cycle, and hence both drastically improved utilization of fuel resources and minimization of long-lived radioactive wastes. Like the SFR, the GFR is an efficient breeder, also able to work as iso-breeder using simply natural uranium as feed and producing waste which is predominantly in the form of fission products. The main drawback of the GFR is the difficulty to evacuate decay heat following a loss-of-coolant accident (LOCA) due to the low thermal inertia of the core, as well as to the low coolant density. The present doctoral research focuses on the improvement of decay heat removal (DHR) for the Generation-IV GFR. The reference GFR system design considered in the thesis is the 2006 CEA concept, with a power of 2400 MWth. The CEA 2006 DHR strategy foresees, in all accidental cases (independent of the system pressure), that the reactor is shut down. For high pressure events, dedicated DHR loops with blowers and heat exchangers are designed to operate when the power conversion system cannot be used to provide acceptable core temperatures under natural convection conditions. For de-pressurized events, the strategy relies on a dedicated small containment (called the guard containment) providing an intermediate back-up pressure. The DHR blowers, designed to work under these pressure

  5. I-V characteristics of graphene nanoribbon/h-BN heterojunctions and resonant tunneling.

    Science.gov (United States)

    Wakai, Taiga; Sakamoto, Shoichi; Tomiya, Mitsuyoshi

    2018-07-04

    We present the first principle calculations of the electrical properties of graphene sheet/h-BN heterojunction (GS/h-BN) and 11-armchair graphene nanoribbon/h-BN heterojunction (11-AGNR/h-BN), which are carried out using the density functional theory (DFT) method and the non-equilibrium Green's function (NEGF) technique. Since 11-AGNR belongs to the conductive (3n-1)-family of AGNR, both are metallic nanomaterials with two transverse arrays of h-BN, which is a wide-gap semi-conductor. The two h-BN arrays act as double barriers. The transmission functions (TF) and I-[Formula: see text] characteristics of GS/h-BN and 11-AGNR/h-BN are calculated by DFT and NEGF, and they show that quantum double barrier tunneling occurs. The TF becomes very spiky in both materials, and it leads to step-wise I-[Formula: see text] characteristics rather than negative resistance, which is the typical behavior of double barriers in semiconductors. The results of our first principle calculations are also compared with 1D Dirac equation model for the double barrier system. The model explains most of the peaks of the transmission functions nearby the Fermi energy quite well. They are due to quantum tunneling.

  6. Nonlinear I-V characteristics of doped SnO{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Dhage, S.R.; Choube, Vandana; Ravi, V

    2004-07-15

    When tin oxide is doped with Sb{sub 2}O{sub 3} and CoO, it shows highly nonlinear current (I)-voltage (V) characteristics. Addition of CoO leads to creation of oxygen vacancies and helps in sintering of SnO{sub 2}. Antimony oxide acts as a donor and increases the conductivity. The results are nearly same when antimony oxide is replaced by tantalum oxide. The grain size of these sintered ceramics varies from 5 to 7 {mu}m and the grain boundary barrier height (PHI{sub B}) is in the range of 0.5 eV. The observed nonlinear coefficient ({alpha}) is 25 and 27 for antimony and tantalum oxide, respectively and the breakdown field is in the range of 1250 V cm{sup -1}.

  7. Charge carrier transport in Cu(In,Ga)Se2 thin-film solar-cells studied by electron beam induced current and temperature and illumination dependent current voltage analysis

    International Nuclear Information System (INIS)

    Nichterwitz, Melanie

    2012-01-01

    This work contributes to the understanding of generation dependent charge-carrier transport properties in Cu(In,Ga)Se 2 (CIGSe)/ CdS/ ZnO solar cells and a consistent model for the electronic band diagram of the heterojunction region of the device is developed. Cross section electron-beam induced current (EBIC) and temperature and illumination dependent current voltage (IV) measurements are performed on CIGSe solar cells with varying absorber layer compositions and CdS thickness. For a better understanding of possibilities and limitations of EBIC measurements applied on CIGSe solar cells, detailed numerical simulations of cross section EBIC profiles for varying electron beam and solar cell parameters are performed and compared to profiles obtained from an analytical description. Especially the effects of high injection conditions are considered. Even though the collection function of the solar cell is not independent of the generation function of the electron beam, the local electron diffusion length in CIGSe can still be extracted. Grain specific values ranging from (480±70) nm to (2.3±0.2) μm are determined for a CuInSe 2 absorber layer and a value of (2.8±0.3) μm for CIGSe with a Ga-content of 0.3. There are several models discussed in literature to explain generation dependent charge carrier transport, all assuming a high acceptor density either located in the CIGSe layer close to the CIGSe/CdS interface (p + layer), within the CdS layer or at the CdS/ZnO interface. In all models, a change in charge carrier collection properties is caused by a generation dependent occupation probability of the acceptor type defect state and the resulting potential distribution throughout the device. Numerical simulations of EBIC and IV data are performed with parameters according to these models. The model that explains the experimental data best is that of a p + layer at the CIGSe/CdS interface and acceptor type defect states at the CdS/ZnO interface. The p + layer leads

  8. In-vivo characteristics of high and low specific activity radioiodinated (+)-2-[4-(4-iodophenyl) piperidino] cyclohexanol [(+)-pIV] for imaging sigma-1 receptor in brain

    International Nuclear Information System (INIS)

    Akhter, Nasima; Kinuya, Seigo; Nakajima, Kenichi; Shiba, Kazuhiro; Ogawa, Kazuma; Mori, Hirofumi

    2007-01-01

    Full text: In this study, (+)-enantiomer of radioiodinated 2-[4-(4- iodophenyl)piperidino]cyclohexanol ((+)-[ 125 I]-p- iodovesamicol) [(+)-[ 125 I]pIV], which is reported to bind with high affinity to the sigma-1 receptor both in vitro and in vivo, was tested to compare the in vivo characteristics between high and low specific activity (+)-[ 125 I]pIV to image sigma-1 receptor in the central nervous system. In the biodistribution study, no significant difference was observed between two methods. Accumulation of (+)- [ 125 I]pIV in rat brain was significant (approximately 3% of the injected dose) and its retention was prolonged. In the blocking study, the accumulation of (+)-[ 125 I] pIV in the rat brain was significantly reduced by the co-administration of sigma ligands such as pentazocine, haloperidol or SA4503 in both methods. But the blocking effect was relatively stronger in the study using high specific activity radioiodinated (+)pIV. Though, the distribution of high and low specific activity (+)-[ 125 I] pIV was more or less similar to bind to sigma-1 receptor in the central nervous system in vivo, high specific activity radioiodinated (+) pIV might have a better specificity to bind sigma-1 receptor in brain. (author)

  9. Intelligent fault diagnosis of photovoltaic arrays based on optimized kernel extreme learning machine and I-V characteristics

    International Nuclear Information System (INIS)

    Chen, Zhicong; Wu, Lijun; Cheng, Shuying; Lin, Peijie; Wu, Yue; Lin, Wencheng

    2017-01-01

    Highlights: •An improved Simulink based modeling method is proposed for PV modules and arrays. •Key points of I-V curves and PV model parameters are used as the feature variables. •Kernel extreme learning machine (KELM) is explored for PV arrays fault diagnosis. •The parameters of KELM algorithm are optimized by the Nelder-Mead simplex method. •The optimized KELM fault diagnosis model achieves high accuracy and reliability. -- Abstract: Fault diagnosis of photovoltaic (PV) arrays is important for improving the reliability, efficiency and safety of PV power stations, because the PV arrays usually operate in harsh outdoor environment and tend to suffer various faults. Due to the nonlinear output characteristics and varying operating environment of PV arrays, many machine learning based fault diagnosis methods have been proposed. However, there still exist some issues: fault diagnosis performance is still limited due to insufficient monitored information; fault diagnosis models are not efficient to be trained and updated; labeled fault data samples are hard to obtain by field experiments. To address these issues, this paper makes contribution in the following three aspects: (1) based on the key points and model parameters extracted from monitored I-V characteristic curves and environment condition, an effective and efficient feature vector of seven dimensions is proposed as the input of the fault diagnosis model; (2) the emerging kernel based extreme learning machine (KELM), which features extremely fast learning speed and good generalization performance, is utilized to automatically establish the fault diagnosis model. Moreover, the Nelder-Mead Simplex (NMS) optimization method is employed to optimize the KELM parameters which affect the classification performance; (3) an improved accurate Simulink based PV modeling approach is proposed for a laboratory PV array to facilitate the fault simulation and data sample acquisition. Intensive fault experiments are

  10. Current, voltage and temperature distribution modeling of light-emitting diodes based on electrical and thermal circuit analysis

    International Nuclear Information System (INIS)

    Yun, J; Shim, J-I; Shin, D-S

    2013-01-01

    We demonstrate a modeling method based on the three-dimensional electrical and thermal circuit analysis to extract current, voltage and temperature distributions of light-emitting diodes (LEDs). In our model, the electrical circuit analysis is performed first to extract the current and voltage distributions in the LED. Utilizing the result obtained from the electrical circuit analysis as distributed heat sources, the thermal circuit is set up by using the duality between Fourier's law and Ohm's law. From the analysis of the thermal circuit, the temperature distribution at each epitaxial film is successfully obtained. Comparisons of experimental and simulation results are made by employing an InGaN/GaN multiple-quantum-well blue LED. Validity of the electrical circuit analysis is confirmed by comparing the light distribution at the surface. Since the temperature distribution at each epitaxial film cannot be obtained experimentally, the apparent temperature distribution is compared at the surface of the LED chip. Also, experimentally obtained average junction temperature is compared with the value calculated from the modeling, yielding a very good agreement. The analysis method based on the circuit modeling has an advantage of taking distributed heat sources as inputs, which is essential for high-power devices with significant self-heating. (paper)

  11. Military Curricula for Vocational & Technical Education. Basic Electricity and Electronics Individualized Learning System. CANTRAC A-100-0010. Module Five: Relationships of Current, Voltage, and Resistance. Study Booklet.

    Science.gov (United States)

    Chief of Naval Education and Training Support, Pensacola, FL.

    This individualized learning module on the relationships of current, voltage, and resistance is one in a series of modules for a course in basic electricity and electronics. The course is one of a number of military-developed curriculum packages selected for adaptaticn to vocational instructional and curriculum development in a civilian setting.…

  12. Investigation of diode parameters using I-V and C-V characteristics of In/SiO{sub 2}/p-Si (MIS) Schottky diodes

    Energy Technology Data Exchange (ETDEWEB)

    Yueksel, O.F. [Department of Physics, Faculty of Arts and Science, Selcuk University, Kampus, Konya 42075 (Turkey)], E-mail: fyuksel@selcuk.edu.tr; Selcuk, A.B.; Ocak, S.B. [PK, 14 Etlik, Ankara (Turkey)

    2008-08-01

    A study on interface states density distribution and characteristic parameters of the In/SiO{sub 2}/p-Si (MIS) capacitor has been made. The thickness of the SiO{sub 2} film obtained from the measurement of the corrected capacitance in the strong accumulation region for MIS Schottky diodes was 220 A. The diode parameters from the forward bias I-V characteristics such as ideality factor, series resistance and barrier heights were found to be 1.75, 106-112 {omega} and 0.592 eV, respectively. The energy distribution of the interface state density D{sub it} was determined from the forward bias I-V characteristics by taking into account the bias dependence of the effective barrier height. The interface state density obtained using the I-V characteristics had an exponential growth, with bias towards the top of the valance band, from 9.44x10{sup 13} eV{sup -1} cm{sup -2} in 0.329-E{sub v} eV to 1.11x10{sup 13} eV{sup -1} cm{sup -2} in 0.527-E{sub v} eV at room temperature. Furthermore, the values of interface state density D{sub it} obtained by the Hill-Coleman method from the C-V characteristics range from 52.9x10{sup 13} to 1.11x10{sup 13} eV{sup -1} cm{sup -2} at a frequency range of 30kHz-1 MHz. These values of D{sub it} and R{sub s} were responsible for the non-ideal behaviour of I-V and C-V characteristics.

  13. Depth-resolved ultra-violet spectroscopic photo current-voltage measurements for the analysis of AlGaN/GaN high electron mobility transistor epilayer deposited on Si

    International Nuclear Information System (INIS)

    Ozden, Burcu; Yang, Chungman; Tong, Fei; Khanal, Min P.; Mirkhani, Vahid; Sk, Mobbassar Hassan; Ahyi, Ayayi Claude; Park, Minseo

    2014-01-01

    We have demonstrated that the depth-dependent defect distribution of the deep level traps in the AlGaN/GaN high electron mobility transistor (HEMT) epi-structures can be analyzed by using the depth-resolved ultra-violet (UV) spectroscopic photo current-voltage (IV) (DR-UV-SPIV). It is of great importance to analyze deep level defects in the AlGaN/GaN HEMT structure, since it is recognized that deep level defects are the main source for causing current collapse phenomena leading to reduced device reliability. The AlGaN/GaN HEMT epi-layers were grown on a 6 in. Si wafer by metal-organic chemical vapor deposition. The DR-UV-SPIV measurement was performed using a monochromatized UV light illumination from a Xe lamp. The key strength of the DR-UV-SPIV is its ability to provide information on the depth-dependent electrically active defect distribution along the epi-layer growth direction. The DR-UV-SPIV data showed variations in the depth-dependent defect distribution across the wafer. As a result, rapid feedback on the depth-dependent electrical homogeneity of the electrically active defect distribution in the AlGaN/GaN HEMT epi-structure grown on a Si wafer with minimal sample preparation can be elucidated from the DR-UV-SPIV in combination with our previously demonstrated spectroscopic photo-IV measurement with the sub-bandgap excitation.

  14. Depth-resolved ultra-violet spectroscopic photo current-voltage measurements for the analysis of AlGaN/GaN high electron mobility transistor epilayer deposited on Si

    Energy Technology Data Exchange (ETDEWEB)

    Ozden, Burcu; Yang, Chungman; Tong, Fei; Khanal, Min P.; Mirkhani, Vahid; Sk, Mobbassar Hassan; Ahyi, Ayayi Claude; Park, Minseo, E-mail: park@physics.auburn.edu [Department of Physics, Auburn University, Auburn, Alabama 36849 (United States)

    2014-10-27

    We have demonstrated that the depth-dependent defect distribution of the deep level traps in the AlGaN/GaN high electron mobility transistor (HEMT) epi-structures can be analyzed by using the depth-resolved ultra-violet (UV) spectroscopic photo current-voltage (IV) (DR-UV-SPIV). It is of great importance to analyze deep level defects in the AlGaN/GaN HEMT structure, since it is recognized that deep level defects are the main source for causing current collapse phenomena leading to reduced device reliability. The AlGaN/GaN HEMT epi-layers were grown on a 6 in. Si wafer by metal-organic chemical vapor deposition. The DR-UV-SPIV measurement was performed using a monochromatized UV light illumination from a Xe lamp. The key strength of the DR-UV-SPIV is its ability to provide information on the depth-dependent electrically active defect distribution along the epi-layer growth direction. The DR-UV-SPIV data showed variations in the depth-dependent defect distribution across the wafer. As a result, rapid feedback on the depth-dependent electrical homogeneity of the electrically active defect distribution in the AlGaN/GaN HEMT epi-structure grown on a Si wafer with minimal sample preparation can be elucidated from the DR-UV-SPIV in combination with our previously demonstrated spectroscopic photo-IV measurement with the sub-bandgap excitation.

  15. Gate Control Coefficient Effect on CNFET Characteristic

    International Nuclear Information System (INIS)

    Sanudin, Rahmat; Ma'Radzi, Ahmad Alabqari; Nayan, Nafarizal

    2009-01-01

    The development of carbon nanotube field-effect transistor (CNFET) as alternative to existing transistor technology has long been published and discussed. The emergence of this device offers new material and structure in building a transistor. This paper intends to do an analysis of gate control coefficient effect on CNFET performance. The analysis is based on simulation study of current-voltage (I-V) characteristic of ballistic CNFET. The simulation study used the MOSFET-like CNFET mathematical model to establish the device output characteristic. Based on the analysis of simulation result, it is found that the gate control coefficient contributes to a significant effect on the performance of CNFET. The result also shown the parameter could help to improve the device performance in terms of its output and response as well. Nevertheless, the characteristic of the carbon nanotube that acts as the channel is totally important in determining the performance of the transistor as a whole.

  16. Negative resistance in I-V characteristics and 2D vortex dynamics in a-W/Si multilayer superconductors with periodic antidot arrays

    Energy Technology Data Exchange (ETDEWEB)

    Kurosu, Y.; Yokoyama, M.; Kuwasawa, Y.; Matsuda, S.; Nojima, T

    2003-05-01

    We have examined the vortex dynamics in W/Si multilayers with the arrays of antidots in the form of square and triangular lattices. In the measurements of I-V characteristics as a function of temperature T and magnetic field H, we find a specific feature that the V(I) curves coincide irrespective of T. Especially the V(I) curves with a negative slope are observed in the multilayer with triangular arrays.

  17. Asymptotic and numerical prediction of current-voltage curves for an organic bilayer solar cell under varying illumination and comparison to the Shockley equivalent circuit

    KAUST Repository

    Foster, J. M.

    2013-01-01

    In this study, a drift-diffusion model is used to derive the current-voltage curves of an organic bilayer solar cell consisting of slabs of electron acceptor and electron donor materials sandwiched together between current collectors. A simplified version of the standard drift-diffusion equations is employed in which minority carrier densities are neglected. This is justified by the large disparities in electron affinity and ionisation potential between the two materials. The resulting equations are solved (via both asymptotic and numerical techniques) in conjunction with (i) Ohmic boundary conditions on the contacts and (ii) an internal boundary condition, imposed on the interface between the two materials, that accounts for charge pair generation (resulting from the dissociation of excitons) and charge pair recombination. Current-voltage curves are calculated from the solution to this model as a function of the strength of the solar charge generation. In the physically relevant power generating regime, it is shown that these current-voltage curves are well-approximated by a Shockley equivalent circuit model. Furthermore, since our drift-diffusion model is predictive, it can be used to directly calculate equivalent circuit parameters from the material parameters of the device. © 2013 AIP Publishing LLC.

  18. Pore Structure and Fluoride Ion Adsorption Characteristics of Zr (IV) Surface-Immobilized Resin Prepared Using Polystyrene as a Porogen

    Science.gov (United States)

    Mizuki, Hidenobu; Ito, Yudai; Harada, Hisashi; Uezu, Kazuya

    Zr(IV) surface-immobilized resins for removal of fluoride ion were prepared by surface template polymerization using polystyrene as a porogen. At polymerization, polystyrene was added in order to increase mesopores (2-50 nm) and macropore (>50 nm) with large macropores (around 300 nm) formed with internal aqueous phase of W⁄O emulsion. The pore structure of Zr(IV) surface-immobilized resins was evaluated by measuring specific surface area, pore volume, and pore size distribution with volumetric adsorption measurement instrument and mercury porosimeter. The adsorption isotherms were well fitted by Langmuir equation. The removal of fluoride was also carried out with column method. Zr(IV) surface-immobilized resins, using 10 g⁄L polystyrene in toluene at polymerization, possessed higher volume of not only mesopores and macropores but also large macropores. Furethermore, by adding the polystyrene with smaller molecular size, the pore volume of mesopores, macropores and large macropores was significantly increased, and the fluoride ion adsorption capacity and the column utilization also increased.

  19. Characteristics and Thermal Efficiency of a Non-transferred DC Plasma Spraying Torch Under Low Pressure

    International Nuclear Information System (INIS)

    Bao Shicong; Ye Minyou; Zhang Xiaodong; Guo Wenkang; Xu Ping

    2008-01-01

    Current-voltage (I-V) characteristics of a non-transferred DC arc plasma spray torch operated in argon at vacuum are reported. The arc voltage is of negative characteristics for a current below 200 A, flat for a current between 200 A to 250 A and positive for a current beyond 250 A. The voltage increases slowly with the increase in carrier gas of arc. The rate of change in voltage with currents is about 3∼4 V/100 A at a gas flow rate of about 1∼1.5 V/10 standard liter per minute (slpm). The I-V characteristics of the DC plasma torch are of a shape of hyperbola. Arc power increases with the argon flow rate, and the thermal efficiency of the torch acts in a similar way. The thermal efficiency of the non-transferred DC plasmatron is about 65∼78%. (low temperature plasma)

  20. Transport current ac losses and current-voltage curves of multifilamentary Bi-2223/Ag tape with artificial defects

    International Nuclear Information System (INIS)

    Polak, M.; Jansak, L.

    2000-01-01

    We experimentally studied the effects of a single artificial defect and a linear array of artificial defects on I-V curves, critical currents and transport current ac losses of 55 filament untwisted Bi-2223/Ag tapes. The artificial defect was a small hole drilled into the tape. The reduction in the critical current measured on a 1 cm long section due to one hole of diameter 0.9 mm was 33% and that due to a linear array of seven similar holes was 62%. The slopes of the I-V curves, n, measured in this section were 33, 16 and 5.8 in the original sample, in the sample with one defect and the sample with seven defects, respectively. Both I c and the slope reduction were smaller if the distance between the potential taps was increased. The transport current ac losses at 50 Hz and I rms = 10 A in the sample with one defect measured in a 1 cm long section were practically the same as those in the original sample (4.1x10 -4 W m -1 ), but they increased by 83% in the sample with a linear array of seven defects. The measured increase in losses per unit length was the smaller, the larger the distance between the potential taps. A comparison between the measured and calculated losses revealed that a formal application of the Norris equations for loss calculations in samples with local defects leads to an overestimation of the ac losses. A procedure for the calculation of transport current losses in samples with local defects based on the Norris model is proposed and verified. (author)

  1. Effect of 3.0 MeV helium implantation on electrical characteristics of 4H-SiC BJTs

    International Nuclear Information System (INIS)

    Usman, Muhammad; Hallen, Anders; Ghandi, Reza; Domeij, Martin

    2010-01-01

    Degradation of 4H-SiC power bipolar junction transistors (BJTs) under the influence of a high-energy helium ion beam was studied. Epitaxially grown npn BJTs were implanted with 3.0 MeV helium in the fluence range of 10 10 -10 11 cm -2 . The devices were characterized by their current-voltage (I-V) behaviour before and after the implantation, and the results showed a clear degradation of the output characteristics of the devices. Annealing these implanted devices increased the interface traps between passivation oxide and the semiconductor, resulting in an increase of base current in the low-voltage operation range.

  2. Distribution of barrier heights in Au/porous GaAs Schottky diodes from current-voltage-temperature measurements

    International Nuclear Information System (INIS)

    Harrabi, Z.; Jomni, S.; Beji, L.; Bouazizi, A.

    2010-01-01

    In this work, we have studied the electrical characteristics of the Au/porous GaAs/p-GaAs diodes as a function of temperature. The (I-V)-T characteristics are analysed on the basis of thermionic emission (TE). The temperature behaviour of the barrier height potential and the ideality factor demonstrate that the current transport is controlled by the thermionic emission mechanism (TE) with Gaussian distribution of the barrier height potential. The Gaussian distribution of barrier height potential is due to barrier inhomogeneity, which is suggested to be caused by the presence of the porous GaAs interfacial layer. The experimental (I-V)-T characteristics of the Au/porous GaAs/p-GaAs heterostructure demonstrate the presence of a two Gaussian distributions having a mean barrier height potential Φ b0 -bar of about 0.67 and 0.54 V and standard deviations σ s 2 of about 8.4x10 -3 and 4.2x10 -3 V, respectively. Using the obtained standard deviation, the obtained Richardson constant value is in accordance with the well documented value (79.2 A cm -2 K -2 ) of p-type GaAs and the mean barrier height Φ b0 -bar is closed to the band gap of GaAs. The obtained values prove that the I-V-T characteristics of Au/porous GaAs/p-GaAs heterostructure are governed by the TE mechanism theory with two Gaussian distributions of barrier heights.

  3. Preparation of ZnO film on p-Si and I-V characteristics of p-Si/n-ZnO

    Directory of Open Access Journals (Sweden)

    Shampa Mondal

    2012-01-01

    Full Text Available Zinc oxide (ZnO thin films were deposited on p-silicon (Si substrate from ammonium zincate bath following a chemical dipping technique called SILAR. Films in the thickness range 0.5-4.5 µm could be prepared by varying the number of dipping for a fixed concentration (0.125 M of zincate bath and fixed pH (11.00-11.10. Higher values of dipping produced nonadherent and poor quality films. Structural characterization by X-ray diffraction (XRD indicates the formation of polycrystalline single phase ZnO with strong c-axis orientation. The structural characteristics of the films were found to be a sensitive function of film thickness. The degree of orientation was found to be a function of film thickness and a maximum was found at around 2.2 µm. Scanning electron microscopy (SEM reveals the formation of sub-micrometer crystallites on silicon substrate. The coverage of crystallites (grains on substrate surface increases with number of dipping. Dense film containing grains distributed throughout the surface is obtained at large thicknesses. The ohmic nature of silver (Ag on ZnO and Aluminum (Al on p-Si was confirmed by I-V measurements. I-V characteristic of the p-Si/n-ZnO heterojunction was studied and rectification was observed. The maximum value of forward to reverse current ratio was ~15 at 3.0 V.

  4. Preparation of ZnO film on p-Si and I-V characteristics of p-Si/n-ZnO

    Directory of Open Access Journals (Sweden)

    Shampa Mondal

    2013-02-01

    Full Text Available Zinc oxide (ZnO thin films were deposited on p-silicon (Si substrate from ammonium zincate bath following a chemical dipping technique called SILAR. Films in the thickness range 0.5-4.5 µm could be prepared by varying the number of dipping for a fixed concentration (0.125 M of zincate bath and fixed pH (11.00-11.10. Higher values of dipping produced nonadherent and poor quality films. Structural characterization by X-ray diffraction (XRD indicates the formation of polycrystalline single phase ZnO with strong c-axis orientation. The structural characteristics of the films were found to be a sensitive function of film thickness. The degree of orientation was found to be a function of film thickness and a maximum was found at around 2.2 µm. Scanning electron microscopy (SEM reveals the formation of sub-micrometer crystallites on silicon substrate. The coverage of crystallites (grains on substrate surface increases with number of dipping. Dense film containing grains distributed throughout the surface is obtained at large thicknesses. The ohmic nature of silver (Ag on ZnO and Aluminum (Al on p-Si was confirmed by I-V measurements. I-V characteristic of the p-Si/n-ZnO heterojunction was studied and rectification was observed. The maximum value of forward to reverse current ratio was ~15 at 3.0 V.

  5. Observation of linear I-V curves on vertical GaAs nanowires with atomic force microscope

    Science.gov (United States)

    Geydt, P.; Alekseev, P. A.; Dunaevskiy, M.; Lähderanta, E.; Haggrén, T.; Kakko, J.-P.; Lipsanen, H.

    2015-12-01

    In this work we demonstrate the possibility of studying the current-voltage characteristics for single vertically standing semiconductor nanowires on standard AFM equipped by current measuring module in PeakForce Tapping mode. On the basis of research of eight different samples of p-doped GaAs nanowires grown on different GaAs substrates, peculiar electrical effects were revealed. It was found how covering of substrate surface by SiOx layer increases the current, as well as phosphorous passivation of the grown nanowires. Elimination of the Schottky barrier between golden cap and the top parts of nanowires was observed. It was additionally studied that charge accumulation on the shell of single nanowires affects its resistivity and causes the hysteresis loops on I-V curves.

  6. Effects of ageing on the electrical characteristics of Zn/ZnS/n-GaAs/In structure

    Science.gov (United States)

    Güzeldir, B.; Sağlam, M.

    2016-04-01

    Zn/ZnS/n-GaAs/In structure has been fabricated by the Successive Ionic Layer Adsorption and Reaction (SILAR) method and the influence of the time dependent or ageing on the characteristic parameters are examined. The current-voltage (I-V) of the structure have been measured immediately, 1, 3, 5, 15, 30, 45, 60, 75, 90, 105, 120, 135, 150 and 165 days after fabrication of this structure. The characteristics parameters of this structure such as barrier height, ideality factor, series resistance are calculated from the I-V measurements. It has been seen that the changes of characteristic parameters such as barrier height, ideality factor and series resistance of Zn/ZnS/n-GaAs/In structure have lightly changed with increasing ageing time.

  7. Inductively coupled plasma-induced defects in n-type GaN studied from Schottky diode characteristics

    International Nuclear Information System (INIS)

    Nakamura, W.; Tokuda, Y.; Ueda, H.; Kachi, T.

    2006-01-01

    Inductively coupled plasma-(ICP-)induced defects in n-type GaN have been studied from current-voltage (I-V) characteristics and deep-level transient spectroscopy (DLTS) for Schottky diodes fabricated on etched surfaces. The samples after ICP etching show the ohmic I-V characteristics. Schottky characteristics are obtained after annealing at 600 and 800 deg. C in N 2 , but are not restored to that of the control samples. DLTS shows that the effect of ICP etching is small on the region beyond 80 nm from the surface. These results suggest that there remain ICP-induced damage in the near-surface region after thermal annealing

  8. Global characteristics of atomic spectra and their use for the analysis of spectra. IV. Configuration interaction effects

    International Nuclear Information System (INIS)

    Kucas, S.; Jonauskas, V.; Karazija, R.

    1997-01-01

    For pt.III see ibid., vol.52, p.639, 1995. Changes of the moments of atomic spectrum due to configuration interaction (CI), the CI strength, the average shift of the energy of a level due to its interaction with all levels of distant configuration and other global characteristics of CI effects in atoms are systematised and their expressions presented. The results of the calculation of those characteristics for the energy level spectra of the 3s3p 3 + 3s 2 3p3d configurations in Si isoelectronic series, 3p 5 3d N + 3p 6 3d N-2 4p + 3p 6 3d N-2 4f (N = 5, 6, 7, 8) in Cr, Mn, Fe and Co isoelectronic series, ns 2 np N + np N+2 at n = 2 - 5 and N = 2 - 4 in neutral atoms as well as for the characteristic emission spectra corresponding to the 3p 5 3d 9 + 3d 7 4p → 3d 8 transitions as well as for the Auger M 4.3 N 1 N 2.3 spectra in Kr and N 4.5 O 1 O 2.3 in Xe are given and compared with the same characteristics of the more complete experimental spectra. (orig.)

  9. Current-voltage characterization of Au contact on sol-gel ZnO films with and without conducting polymer

    International Nuclear Information System (INIS)

    Lin, Yow-Jon; Jheng, Mei-Jyuan; Zeng, Jian-Jhou

    2010-01-01

    This study investigates the current density-voltage (J-V) characteristics of Au/n-type ZnO and Au/polyaniline (PANI)/n-type ZnO devices. ZnO films were prepared by the sol-gel method. For Au/n-type ZnO devices, native defects and impurities resident within the ZnO depletion region contribute to barrier thinning of, carrier hopping across, and tunneling through the Schottky barrier. This leads to the formation of nonalloyed ohmic contacts. However, rectifying junctions were formed on n-type ZnO by employing the simple technique of spin-coating PANI to act as the electron-blocking layer. Our present results suggest that the ZnO depletion region at the PANI/n-type ZnO interface is not the origin of the rectifying behavior of Au/PANI/n-type ZnO contact. In addition, the presence of the built-in potential of Au/PANI/n-type ZnO devices could result in the shift of the J-V curve toward negative voltage. Excellent agreement between simulated and measured data was obtained when the built-in potential was taken into account in the J-V relationship.

  10. Local current-voltage behaviors of preferentially and randomly textured Cu(In,Ga)Se2 thin films investigated by conductive atomic force microscopy

    International Nuclear Information System (INIS)

    Shin, R.H.; Jo, W.; Kim, D.W.; Yun, Jae Ho; Ahn, S.

    2011-01-01

    Electrical transport properties on polycrystalline Cu(In,Ga)Se 2 (CIGS) (Ga/(In+Ga) ∼35%) thin films were examined by conductive atomic force microscopy. The CIGS thin films with a (112) preferential or random texture were deposited on Mo-coated glass substrates. Triangular pyramidal grain growths were observed in the CIGS thin films preferentially textured to the (112) planes. Current maps of the CIGS surface were acquired with a zero or non-zero external voltage bias. The contrast of the images on the grain boundaries and intragrains displayed the conduction path in the materials. Local current-voltage measurements were performed to evaluate the charge conduction properties of the CIGS thin films. (orig.)

  11. Analysis of high field effects on the steady-state current-voltage response of semi-insulating 4H-SiC for photoconductive switch applications

    Energy Technology Data Exchange (ETDEWEB)

    Tiskumara, R. [Department of Electrical and Computer Engineering, Old Dominion University, Norfolk, Virginia 23529 (United States); Joshi, R. P., E-mail: ravi.joshi@ttu.edu; Mauch, D.; Dickens, J. C.; Neuber, A. A. [Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, Texas 79409 (United States)

    2015-09-07

    A model-based analysis of the steady-state, current-voltage response of semi-insulating 4H-SiC is carried out to probe the internal mechanisms, focusing on electric field driven effects. Relevant physical processes, such as multiple defects, repulsive potential barriers to electron trapping, band-to-trap impact ionization, and field-dependent detrapping, are comprehensively included. Results of our model match the available experimental data fairly well over orders of magnitude variation in the current density. A number of important parameters are also extracted in the process through comparisons with available data. Finally, based on our analysis, the possible presence of holes in the samples can be discounted up to applied fields as high as ∼275 kV/cm.

  12. Local current-voltage behaviors of preferentially and randomly textured Cu(In,Ga)Se{sub 2} thin films investigated by conductive atomic force microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Shin, R.H.; Jo, W. [Ewha Womans University, Department of Physics, Seoul (Korea, Republic of); Kim, D.W. [Ewha Womans University, Department of Physics, Seoul (Korea, Republic of); Ewha Womans University, Department of Chemistry and Nanosciences, Seoul (Korea, Republic of); Yun, Jae Ho; Ahn, S. [Korea Institute of Energy Research, Daejeon (Korea, Republic of)

    2011-09-15

    Electrical transport properties on polycrystalline Cu(In,Ga)Se{sub 2} (CIGS) (Ga/(In+Ga) {approx}35%) thin films were examined by conductive atomic force microscopy. The CIGS thin films with a (112) preferential or random texture were deposited on Mo-coated glass substrates. Triangular pyramidal grain growths were observed in the CIGS thin films preferentially textured to the (112) planes. Current maps of the CIGS surface were acquired with a zero or non-zero external voltage bias. The contrast of the images on the grain boundaries and intragrains displayed the conduction path in the materials. Local current-voltage measurements were performed to evaluate the charge conduction properties of the CIGS thin films. (orig.)

  13. Asteroids IV

    Science.gov (United States)

    Michel, Patrick; DeMeo, Francesca E.; Bottke, William F.

    . Asteroids, like planets, are driven by a great variety of both dynamical and physical mechanisms. In fact, images sent back by space missions show a collection of small worlds whose characteristics seem designed to overthrow our preconceived notions. Given their wide range of sizes and surface compositions, it is clear that many formed in very different places and at different times within the solar nebula. These characteristics make them an exciting challenge for researchers who crave complex problems. The return of samples from these bodies may ultimately be needed to provide us with solutions. In the book Asteroids IV, the editors and authors have taken major strides in the long journey toward a much deeper understanding of our fascinating planetary ancestors. This book reviews major advances in 43 chapters that have been written and reviewed by a team of more than 200 international authorities in asteroids. It is aimed to be as comprehensive as possible while also remaining accessible to students and researchers who are interested in learning about these small but nonetheless important worlds. We hope this volume will serve as a leading reference on the topic of asteroids for the decade to come. We are deeply indebted to the many authors and referees for their tremendous efforts in helping us create Asteroids IV. We also thank the members of the Asteroids IV scientific organizing committee for helping us shape the structure and content of the book. The conference associated with the book, "Asteroids Comets Meteors 2014" held June 30-July 4, 2014, in Helsinki, Finland, did an outstanding job of demonstrating how much progress we have made in the field over the last decade. We are extremely grateful to our host Karri Muinonnen and his team. The editors are also grateful to the Asteroids IV production staff, namely Renée Dotson and her colleagues at the Lunar and Planetary Institute, for their efforts, their invaluable assistance, and their enthusiasm; they made life as

  14. An accurate mobility model for the I-V characteristics of n-channel enhancement-mode MOSFETs with single-channel boron implantation

    International Nuclear Information System (INIS)

    Chingyuan Wu; Yeongwen Daih

    1985-01-01

    In this paper an analytical mobility model is developed for the I-V characteristics of n-channel enhancement-mode MOSFETs, in which the effects of the two-dimensional electric fields in the surface inversion channel and the parasitic resistances due to contact and interconnection are included. Most importantly, the developed mobility model easily takes the device structure and process into consideration. In order to demonstrate the capabilities of the developed model, the structure- and process-oriented parameters in the present mobility model are calculated explicitly for an n-channel enhancement-mode MOSFET with single-channel boron implantation. Moreover, n-channel MOSFETs with different channel lengths fabricated in a production line by using a set of test keys have been characterized and the measured mobilities have been compared to the model. Excellent agreement has been obtained for all ranges of the fabricated channel lengths, which strongly support the accuracy of the model. (author)

  15. Note: Measuring breakdown characteristics during the hot re-ignition of high intensity discharge lamps using high frequency alternating current voltage.

    Science.gov (United States)

    van den Bos, R A J M; Sobota, A; Manders, F; Kroesen, G M W

    2013-04-01

    To investigate the cold and hot re-ignition properties of High Intensity Discharge (HID) lamps in more detail an automated setup was designed in such a way that HID lamps of various sizes and under different background pressures can be tested. The HID lamps are ignited with a ramped sinusoidal voltage signal with frequencies between 60 and 220 kHz and with amplitude up to 7.5 kV. Some initial results of voltage and current measurements on a commercially available HID lamp during hot and cold re-ignition are presented.

  16. Current-voltage characteristics of SnO2-Co3O4-Cr2O3-Sb2O5 ceramics

    International Nuclear Information System (INIS)

    Aguilar-Martinez, J A; Glot, A B; Gaponov, A V; Hernandez, M B; Guerrero-Paz, J

    2009-01-01

    The effect of mechanical treatment in a planetary mill on the microstructure and electrical properties of tin dioxide based varistor ceramics in the system SnO 2 -Co 3 O 4 -Cr 2 O 3 -Sb 2 O 5 sintered in the range 1150-1450 0 C was studied. The mechanical treatment leads to an increase in shrinkage, decrease in porosity, decrease in sample diameter, change in colour of the sintered samples from grey to black and enhancement of nonlinearity. For the sample sintered at 1350 0 C the mechanical treatment enhances the nonlinearity coefficient from 11 to 31 and decreases the electric field E 1 (at 10 -3 A cm -2 ) from 3500 to 2800 V cm -1 . The observed changes in physical properties are explained in terms of an additional size reduction of oxide particles and a better mixing of oxide powder followed by the formation of potential barriers at the grain boundaries throughout the whole sample. In spite of the low porosity, the low-field electrical conductivity of mechanically treated ceramics is significantly increased with the growth of relative humidity. A higher humidity sensitivity is found for mechanically treated ceramics with higher barrier height and higher nonlinearity coefficient.

  17. Experimental analysis and modeling of the IV characteristics of photovoltaic solar cells under solar spectrum spot illumination

    Energy Technology Data Exchange (ETDEWEB)

    Munji, M.K., E-mail: mathew.munji@nmmu.ac.z [Department of Physics, Nelson Mandela Metropolitan University, PO Box 7700 Port Elizabeth 6031 (South Africa); Dyk, E.E. van; Vorster, F.J. [Department of Physics, Nelson Mandela Metropolitan University, PO Box 7700 Port Elizabeth 6031 (South Africa)

    2009-12-01

    In this paper, some models that have been put forward to explain the characteristics of a photovoltaic solar cell device under solar spot-illumination are investigated. In the experimental procedure, small areas of the cell were selected and illuminated at different solar intensities. The solar cell open circuit voltage (V{sub oc}) and short circuit current (I{sub sc}) obtained at different illumination intensities was used to determine the solar cell ideality factor. By varying the illuminated area on the solar cell, changes in the ideality factor were studied. The ideality factor obtained increases with decreasing illumination surface ratio. The photo-generated current at the illuminated part of the cell is assumed to act as a dc source that injects charge carriers into the p-n junction of the whole solar cell while the dark region of the solar cell operates in a low space charge recombination regime with small diffusion currents. From this analysis, a different model of a spot illuminated cell that uses the variation of ideality factor with the illuminated area is proposed.

  18. Experimental analysis and modeling of the IV characteristics of photovoltaic solar cells under solar spectrum spot illumination

    International Nuclear Information System (INIS)

    Munji, M.K.; Dyk, E.E. van; Vorster, F.J.

    2009-01-01

    In this paper, some models that have been put forward to explain the characteristics of a photovoltaic solar cell device under solar spot-illumination are investigated. In the experimental procedure, small areas of the cell were selected and illuminated at different solar intensities. The solar cell open circuit voltage (V oc ) and short circuit current (I sc ) obtained at different illumination intensities was used to determine the solar cell ideality factor. By varying the illuminated area on the solar cell, changes in the ideality factor were studied. The ideality factor obtained increases with decreasing illumination surface ratio. The photo-generated current at the illuminated part of the cell is assumed to act as a dc source that injects charge carriers into the p-n junction of the whole solar cell while the dark region of the solar cell operates in a low space charge recombination regime with small diffusion currents. From this analysis, a different model of a spot illuminated cell that uses the variation of ideality factor with the illuminated area is proposed.

  19. Film thickness degradation of Au/GaN Schottky contact characteristics

    International Nuclear Information System (INIS)

    Wang, K.; Wang, R.X.; Fung, S.; Beling, C.D.; Chen, X.D.; Huang, Y.; Li, S.; Xu, S.J.; Gong, M.

    2005-01-01

    Electrical characteristics of Au/n-GaN Schottky contacts with different Au film thicknesses up to 1300 A, have been investigated using current-voltage (I-V) and capacitance-voltage (C-V) techniques. Results show a steady decrease in the quality of the Schottky diodes for increasing Au film thickness. I-V measurements indicate that thin ( 500 A). Depth profiling Auger electron spectroscopy (AES) shows that the width of the Au/GaN junction interface increases with increasing Au thickness, suggesting considerable inter-mixing of Au, Ga and N. The results have been interpreted in terms of Ga out-diffusion from the GaN giving rise to gallium vacancies that in turn act as sites for electron-hole pair generation within the depletion region. The study supports the recent suggestion that gallium vacancies associated with threaded dislocations are playing an important role in junction breakdown

  20. A change of in vivo characteristics depending on specific activity of radioiodinated (+)-2-[4-(4-iodophenyl)piperidino]cyclohexanol [(+)-pIV] as a ligand for sigma receptor imaging

    International Nuclear Information System (INIS)

    Akhter, Nasima; Shiba, Kazuhiro; Ogawa, Kazuma; Tsuji, Shiro; Kinuya, Seigo; Nakajima, Kenichi; Mori, Hirofumi

    2008-01-01

    The radioiodinated (+)-p-iodovesamicol [(+)-pIV], which shows a high binding affinity for sigma-1 (σ-1) receptors, is prepared by an exchange reaction. The specific activity (SA) is fairly low and therefore is insufficient for clinical use. In this study, we prepared (+)-[ 125 I]pIV with a high SA from tributylstannyl precursor and compared the in vivo characteristics between high and low SA by imaging σ-1 receptors in the central nervous system. In the biodistribution study, a difference in brain accumulation was observed between the two methods. At 30 min postinjection, the brain accumulation (1.58%ID/g) of low SA [0.6-1.1 TBq/mmol (16-30 Ci/mmol)] (+)-[ 125 I]pIV was higher than that (1.34%ID/g) of high SA [>88.8 TBq/mmol (>2400 Ci/mmol)] (+)-[ 125 I]pIV. In the blocking study, the brain uptake of high SA (+)-[ 125 I]pIV was reduced more significantly by the coadministration of sigma ligands such as pentazocine, haloperidol or SA4503 than that of low SA (+)-[ 125 I]pIV. These results showed that nonspecific binding of high SA (+)-[ 125 I]pIV in the brain was lower than that of low SA (+)-[ 125 I]pIV, and high SA (+)-[ 125 I]pIV bound more specifically to σ-1 receptors in the brain than low SA (+)-[ 125 I]pIV. In contrast, in the blood-binding study, high SA (+)-[ 125 I]pIV (58.4%) bound to blood cells with higher affinity than low SA (+)-[ 125 I]pIV (46.0%). In metabolite studies, blood metabolites of high SA (+)-[ 125 I]pIV (57.3±3.5%) were higher than those of low SA (+)-[ 125 I]pIV (45.5±4.1%) at 30 min postinjection. Higher SA may be apt to bind to blood cells with higher affinity and to be metabolized faster

  1. Temperature and Magnetic Field Driven Modifications in the I-V Features of Gold-DNA-Gold Structure

    Directory of Open Access Journals (Sweden)

    Nadia Mahmoudi Khatir

    2014-10-01

    Full Text Available The fabrication of Metal-DNA-Metal (MDM structure-based high sensitivity sensors from DNA micro-and nanoarray strands is a key issue in their development. The tunable semiconducting response of DNA in the presence of external electromagnetic and thermal fields is a gift for molecular electronics. The impact of temperatures (25–55 °C and magnetic fields (0–1200 mT on the current-voltage (I-V features of Au-DNA-Au (GDG structures with an optimum gap of 10 μm is reported. The I-V characteristics acquired in the presence and absence of magnetic fields demonstrated the semiconducting diode nature of DNA in GDG structures with high temperature sensitivity. The saturation current in the absence of magnetic field was found to increase sharply with the increase of temperature up to 45 °C and decrease rapidly thereafter. This increase was attributed to the temperature-assisted conversion of double bonds into single bond in DNA structures. Furthermore, the potential barrier height and Richardson constant for all the structures increased steadily with the increase of external magnetic field irrespective of temperature variations. Our observation on magnetic field and temperature sensitivity of I-V response in GDG sandwiches may contribute towards the development of DNA-based magnetic sensors.

  2. Fabrication of n-ZnO/ p-Si (100) and n-ZnO:Al/ p-Si (100) Heterostructures and Study of Current-Voltage, Capacitance-Voltage and Room-Temperature Photoluminescence

    Science.gov (United States)

    Shah, M. A. H.; Khan, M. K. R.; Tanveer Karim, A. M. M.; Rahman, M. M.; Kamruzzaman, M.

    2018-01-01

    Heterojunction diodes of n-ZnO/ p-Si (100) and n-ZnO:Al/ p-Si (100) were fabricated by spray pyrolysis technique. X-ray diffraction (XRD), energy dispersive x-ray spectroscopy (EDX), and field emission scanning electron microscopy (FESEM) were used to characterize the as-prepared samples. The XRD pattern indicates the hexagonal wurzite structure of zinc oxide (ZnO) and Al-doped ZnO (AZO) thin films grown on Si (100) substrate. The compositional analysis by EDX indicates the presence of Al in the AZO structure. The FESEM image indicates the smooth and compact surface of the heterostructures. The current-voltage characteristics of the heterojunction confirm the rectifying diode behavior at different temperatures and illumination intensities. For low forward bias voltage, the ideality factors were determined to be 1.24 and 1.38 for un-doped and Al-doped heterostructures at room temperature (RT), respectively, which indicates the good diode characteristics. The capacitance-voltage response of the heterojunctions was studied for different oscillation frequencies. From the 1/ C 2- V plot, the junction built-in potentials were found 0.30 V and 0.40 V for un-doped and Al-doped junctions at RT, respectively. The differences in built-in potential for different heterojunctions indicate the different interface state densities of the junctions. From the RT photoluminescence (PL) spectrum of the n-ZnO/ p-Si (100) heterostructure, an intense main peak at near band edge (NBE) 378 nm (3.28 eV) and weak deep-level emissions (DLE) centered at 436 nm (2.84 eV) and 412 nm (3.00 eV) were observed. The NBE emission is attributed to the radiative recombination of the free and bound excitons and the DLE results from the radiative recombination through deep level defects.

  3. Ozone and dinitrogen monoxide production in atmospheric pressure air dielectric barrier discharge plasma effluent generated by nanosecond pulse superimposed alternating current voltage

    Science.gov (United States)

    Takashima, Keisuke; Kaneko, Toshiro

    2017-06-01

    The effects of nanosecond pulse superposition to alternating current voltage (NS + AC) on the generation of an air dielectric barrier discharge (DBD) plasma and reactive species are experimentally studied, along with measurements of ozone (O3) and dinitrogen monoxide (N2O) in the exhausted gas through the air DBD plasma (air plasma effluent). The charge-voltage cycle measurement indicates that the role of nanosecond pulse superposition is to induce electrical charge transport and excess charge accumulation on the dielectric surface following the nanosecond pulses. The densities of O3 and N2O in NS + AC DBD are found to be significantly increased in the plasma effluent, compared to the sum of those densities generated in NS DBD and AC DBD operated individually. The production of O3 and N2O is modulated significantly by the phase in which the nanosecond pulse is superimposed. The density increase and modulation effects by the nanosecond pulse are found to correspond with the electrical charge transport and the excess electrical charge accumulation induced by the nanosecond pulse. It is suggested that the electrical charge transport by the nanosecond pulse might result in the enhancement of the nanosecond pulse current, which may lead to more efficient molecular dissociation, and the excess electrical charge accumulation induced by the nanosecond pulse increases the discharge coupling power which would enhance molecular dissociation.

  4. The role of bulk and interface states on performance of a-Si: H p-i-n solar cells using reverse current-voltage technique

    International Nuclear Information System (INIS)

    Mahmood, S A; Kabir, M Z; Murthy, R V R; Dutta, V

    2009-01-01

    The defect state densities in the bulk of the i-layer and at the p/i interface have been studied in hydrogenated amorphous silicon (a-Si : H) solar cells using reverse current-voltage (J-V) measurements. In this work the cells have been soaked with blue and red lights prior to measurements. The voltage-dependent reverse current has been analysed on the basis of thermal generation of the carriers from midgap states in the i-layer and the carrier injection through the p/i interface. Based on the reverse current behaviour, it has been analysed that at lower reverse bias (reverse voltage, V r r ∼ 25 V) the defect states at the p/i interface are contributing to the reverse currents. The applied reverse bias annealing (RBA) treatment on these cells shows more significant annihilation of defect states at the p/i interface as compared with the bulk of the i-layer. An analytical model is developed to explain the observed behaviour. There is good agreement between the theory and the experimental observations. The fitted defect state densities are 9.1 x 10 15 cm -3 and 8 x 10 18 cm -3 in the bulk of the i-layer and near the p/i interface, respectively. These values decrease to 2.5 x 10 15 cm -3 and 6 x 10 17 cm -3 , respectively, in the samples annealed under reverse bias at 2 V.

  5. Field-effect transistors with high mobility and small hysteresis of transfer characteristics based on CH3NH3PbBr3 films

    Science.gov (United States)

    Aleshin, A. N.; Shcherbakov, I. P.; Trapeznikova, I. N.; Petrov, V. N.

    2017-12-01

    Field-effect transistor (FET) structures based on soluble organometallic perovskites, CH3NH3PbBr3, were obtained and their electrical properties were studied. FETs made of CH3NH3PbBr3 films possess current- voltage characteristics (IVs) typical for ambipolar FETs with saturation regime. The transfer characteristics of FETs based on CH3NH3PbBr3 have an insignificant hysteresis and slightly depend on voltage at the source-drain. Mobilities of charge carriers (holes) calculated from IVs of FETs based on CH3NH3PbBr3 at 300 K in saturation and weak field regimes were 5 and 2 cm2/V s, respectively, whereas electron mobility is 3 cm2/V s, which exceeds the mobility value 1 cm2/V s obtained earlier for FETs based on CH3NH3PbI3.

  6. IVS Organization

    Science.gov (United States)

    2004-01-01

    International VLBI Service (IVS) is an international collaboration of organizations which operate or support Very Long Baseline Interferometry (VLBI) components. The goals are: To provide a service to support geodetic, geophysical and astrometric research and operational activities. To promote research and development activities in all aspects of the geodetic and astrometric VLBI technique. To interact with the community of users of VLBI products and to integrate VLBI into a global Earth observing system.

  7. Automatic generation and analysis of solar cell IV curves

    Science.gov (United States)

    Kraft, Steven M.; Jones, Jason C.

    2014-06-03

    A photovoltaic system includes multiple strings of solar panels and a device presenting a DC load to the strings of solar panels. Output currents of the strings of solar panels may be sensed and provided to a computer that generates current-voltage (IV) curves of the strings of solar panels. Output voltages of the string of solar panels may be sensed at the string or at the device presenting the DC load. The DC load may be varied. Output currents of the strings of solar panels responsive to the variation of the DC load are sensed to generate IV curves of the strings of solar panels. IV curves may be compared and analyzed to evaluate performance of and detect problems with a string of solar panels.

  8. Two-phase characteristics of the feeding fluid of Cerro Prieto IV wells (Mexico) obtained by gas equilibrium; Caracteristicas bifasicas del fluido de alimentacion de pozos de Cerro Prieto IV (Mexico), obtenidas por equilibrio gaseoso

    Energy Technology Data Exchange (ETDEWEB)

    Barragan-Reyes, Rosa Maria; Arellano-Gomez, Victor Manuel; Portugal-Marin, Enrique [Instituto de Investigaciones Electricas (Mexico); De Leon-Vivar, Jesus [Comision Federal de Electricidad, Residencia General de Cerro Prieto, B.C (Mexico)

    2008-10-15

    The gas composition of fluids produced by CP IV geothermal wells from the Cerro Prieto field was studied in order to identify different types of fluids entering the wells by estimating their temperature and excess steam. A method based on the Fischer Tropsch reaction and H2S equilibrium with pyrite-pyrrhotite as mineral buffer (FTHSH3) was used. The results for the reservoir natural state indicated the presence of fluids with heterogeneous reservoir temperature (between 275 and 310 degrees Celsius) and excess steam values, which were found from negative (boiled liquid that has lost steam when flowing to the well) to one (steam phase with zero liquid saturation). The study for individual wells in which boiling processes were identified, showed that through time, the feeding fluids consist of a two-phase mixture with different liquid/steam proportions. Also, the results suggested that a steam phase could occur at CP IV which is added to the feeding fluid, depending on the operation conditions of the wells. The origin of this steam could be the boiling of the deeper liquid due to a pressure drop. [Spanish] Se estudio la composicion gaseosa de los fluidos producidos por pozos geotermicos del sector CP IV del campo de Cerro Prieto para tratar de distinguir aportes de fluidos diferentes mediante la estimacion de su temperatura de yacimiento y del exceso de vapor. Se utilizo un metodo de equilibrio gaseoso basado en la reaccion de Fischer Tropsch y el equilibrio combinado pirita-pirrotita (FT-HSH3). Los resultados obtenidos indican que en el estado inicial del yacimiento existen fluidos que muestran heterogeneidad en los valores de temperatura de yacimiento (entre 275 y 310 grados Celsius), asi como en el exceso de vapor con valores desde negativos (liquido que despues de ebullir ha perdido vapor en su trayecto hacia el pozo) hasta uno (vapor con cero saturacion de liquido). El estudio individual de los pozos con fenomenos de ebullicion muestra que a traves del tiempo

  9. Illumination dependence of I-V and C-V characterization of Au/InSb/InP(1 0 0) Schottky structure

    International Nuclear Information System (INIS)

    Akkal, B.; Benamara, Z.; Bouiadjra, N. Bachir; Tizi, S.; Gruzza, B.

    2006-01-01

    The effects of surface preparation and illumination on electric parameters of Au/InSb/InP(100) Schottky diode were investigated, in the later diode InSb forms a fine restructuration layer allowing to block In atoms migration to surface. In order to study the electric characteristics under illumination, we make use of an He-Ne laser of 1 mW power and 632.8 nm wavelength. The current-voltage I(V G ), the capacitance-voltage C(V G ) measurements were plotted and analysed. The saturation current I s , the serial resistance R s and the mean ideality factor n are, respectively, equal to 2.03 x 10 -5 A, 85 Ω, 1.7 under dark and to 3.97 x 10 -5 A, 67 Ω, 1.59 under illumination. The analysis of I(V G ) and C(V G ) characteristics allows us to determine the mean interfacial state density N ss and the transmission coefficient θ n equal, respectively, to 4.33 x 10 12 eV -1 cm -2 , 4.08 x 10 -3 under dark and 3.79 x 10 12 eV -1 cm -2 and 5.65 x 10 -3 under illumination. The deep discrete donor levels presence in the semiconductor bulk under dark and under illumination are responsible for the non-linearity of the C -2 (V G ) characteristic

  10. Nitrogen plasma-treated multilayer graphene-based field effect transistor fabrication and electronic characteristics

    Science.gov (United States)

    Su, Wei-Jhih; Chang, Hsuan-Chen; Honda, Shin-ichi; Lin, Pao-Hung; Huang, Ying-Sheng; Lee, Kuei-Yi

    2017-08-01

    Chemical doping with hetero-atoms is an effective method used to change the characteristics of materials. Nitrogen doping technology plays a critical role in regulating the electronic properties of graphene. Nitrogen plasma treatment was used in this work to dope nitrogen atoms to modulate multilayer graphene electrical properties. The measured I-V multilayer graphene-base field-effect transistor characteristics (GFETs) showed a V-shaped transfer curve with the hole and electron region separated from the measured current-voltage (I-V) minimum. GFETs fabricated with multilayer graphene from chemical vapor deposition (CVD) exhibited p-type behavior because of oxygen adsorption. After using different nitrogen plasma treatment times, the minimum in I-V characteristic shifted into the negative gate voltage region with increased nitrogen concentration and the GFET channel became an n-type semiconductor. GFETs could be easily fabricated using this method with potential for various applications. The GFET transfer characteristics could be tuned precisely by adjusting the nitrogen plasma treatment time.

  11. Electron transport characteristics of silicon nanowires by metal-assisted chemical etching

    Energy Technology Data Exchange (ETDEWEB)

    Qi, Yangyang; Wang, Zhen; Zhang, Mingliang; Wang, Xiaodong, E-mail: xdwang@semi.ac.cn; Ji, An; Yang, Fuhua [Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083 (China)

    2014-03-15

    The electron transport characteristics of silicon nanowires (SiNWs) fabricated by metal-assisted chemical etching with different doping concentrations were studied. By increasing the doping concentration of the starting Si wafer, the resulting SiNWs were prone to have a rough surface, which had important effects on the contact and the electron transport. A metal-semiconductor-metal model and a thermionic field emission theory were used to analyse the current-voltage (I-V) characteristics. Asymmetric, rectifying and symmetric I-V curves were obtained. The diversity of the I-V curves originated from the different barrier heights at the two sides of the SiNWs. For heavily doped SiNWs, the critical voltage was one order of magnitude larger than that of the lightly doped, and the resistance obtained by differentiating the I-V curves at large bias was also higher. These were attributed to the lower electron tunnelling possibility and higher contact barrier, due to the rough surface and the reduced doping concentration during the etching process.

  12. Electron transport characteristics of silicon nanowires by metal-assisted chemical etching

    Directory of Open Access Journals (Sweden)

    Yangyang Qi

    2014-02-01

    Full Text Available The electron transport characteristics of silicon nanowires (SiNWs fabricated by metal-assisted chemical etching with different doping concentrations were studied. By increasing the doping concentration of the starting Si wafer, the resulting SiNWs were prone to have a rough surface, which had important effects on the contact and the electron transport. A metal-semiconductor-metal model and a thermionic field emission theory were used to analyse the current-voltage (I-V characteristics. Asymmetric, rectifying and symmetric I-V curves were obtained. The diversity of the I-V curves originated from the different barrier heights at the two sides of the SiNWs. For heavily doped SiNWs, the critical voltage was one order of magnitude larger than that of the lightly doped, and the resistance obtained by differentiating the I-V curves at large bias was also higher. These were attributed to the lower electron tunnelling possibility and higher contact barrier, due to the rough surface and the reduced doping concentration during the etching process.

  13. Electron transport characteristics of silicon nanowires by metal-assisted chemical etching

    Science.gov (United States)

    Qi, Yangyang; Wang, Zhen; Zhang, Mingliang; Wang, Xiaodong; Ji, An; Yang, Fuhua

    2014-03-01

    The electron transport characteristics of silicon nanowires (SiNWs) fabricated by metal-assisted chemical etching with different doping concentrations were studied. By increasing the doping concentration of the starting Si wafer, the resulting SiNWs were prone to have a rough surface, which had important effects on the contact and the electron transport. A metal-semiconductor-metal model and a thermionic field emission theory were used to analyse the current-voltage (I-V) characteristics. Asymmetric, rectifying and symmetric I-V curves were obtained. The diversity of the I-V curves originated from the different barrier heights at the two sides of the SiNWs. For heavily doped SiNWs, the critical voltage was one order of magnitude larger than that of the lightly doped, and the resistance obtained by differentiating the I-V curves at large bias was also higher. These were attributed to the lower electron tunnelling possibility and higher contact barrier, due to the rough surface and the reduced doping concentration during the etching process.

  14. Temperature dependent electrical characteristics of an organic-inorganic heterojunction obtained from a novel organometal Mn complex

    International Nuclear Information System (INIS)

    Ocak, Y.S.; Ebeoglu, M.A.; Topal, G.; Kilicoglu, T.

    2010-01-01

    This study includes synthesizing a Mn hexaamide (MnHA) organometal compound (C 27 H 21 N 9 O 6 MnCl 2 ).(1/2H 2 O), fabrication of MnHA/n-Si organic-inorganic heterojunction and analysis of conduction mechanism of the device over the room temperature. After synthesizing the molecule, the structure of the compound was determined using spectroscopic methods. The Sn/MnHA/n-Si structure was constructed by forming a thin MnHA layer on n-Si inorganic semiconductor and evaporating Sn metal on organic complex. The structure has shown good rectifying behavior and obeys the thermionic emission theory. The current-voltage (I-V) characteristics of the diode have been measured at temperatures ranging from 300 to 380 K at 10 K intervals to determine the temperature dependent electrical characteristics of the device.

  15. Effect of surface states on electrical characteristic of metal - insulator - semiconductor (MIS) diodes

    International Nuclear Information System (INIS)

    Altindal, S.; Doekme, I.; Tataroglu, A.; Sahingoez, R.

    2002-01-01

    The current-voltage (I-V) characteristics of Metal-Insulator-Semiconductor (MIS) Schottky barrier diodes which is consider distribution of interface states in equilibrium with semiconductor were determined at two (low and high) temperature. The interface states were responsible for non-ideal behavior of the forward I-V characteristic of diodes. Both diodes (n and p type Si) showed non-ideal behavior with an ideality factor 1.6 and 1.85 respectively at room temperature. The higher values of n-type Si were attributed to an order of magnitude higher density of interface states in the both diodes. The effect of an interfacial insulator layer between the metal and semiconductor are also studied. The high density of interface states also caused a reduction in the barrier height of the MIS diode. It is shown that by using Norde function at low and high temperature, barrier height □ b , series resistance R s and ideality factor n can be determined even in the case 1 s obtained from Norde function strongly depend on temperature, and decrease with increasing temperature. In addition, the potential barrier height increases with increasing temperature. The mean density of interface states N ss decreases with increasing temperature. Particularly at low temperature the I-V characteristics are controlled by interface states density

  16. Characteristics of a corona discharge with a hot corona electrode

    International Nuclear Information System (INIS)

    Kulumbaev, E. B.; Lelevkin, V. M.; Niyazaliev, I. A.; Tokarev, A. V.

    2011-01-01

    The effect of the temperature of the corona electrode on the electrical characteristics of a corona discharge was studied experimentally. A modified Townsend formula for the current-voltage characteristic of a one-dimensional corona is proposed. Gasdynamic and thermal characteristics of a positive corona discharge in a coaxial electrode system are calculated. The calculated results are compared with the experimental data.

  17. Epidemiology, clinical characteristics, and associations for symptom-based Rome IV functional dyspepsia in adults in the USA, Canada, and the UK: a cross-sectional population-based study.

    Science.gov (United States)

    Aziz, Imran; Palsson, Olafur S; Törnblom, Hans; Sperber, Ami D; Whitehead, William E; Simrén, Magnus

    2018-04-01

    The population prevalence, clinical characteristics, and associations for Rome IV functional dyspepsia are not known. Following the publication of the Rome IV criteria for functional gastrointestinal disorders, we aimed to assess the prevalence, characteristics, and associations for symptom-based Rome IV functional dyspepsia in adults across the USA, Canada, and the UK. We sent an internet-based cross-sectional health survey to adults in the general population of three English-speaking countries: the USA, Canada, and the UK. We used quota-based sampling to generate demographically balanced and population-representative samples. Individuals were invited to complete an online questionnaire on general health, without mention that the purpose of this survey was to examine gastrointestinal symptoms. We excluded participants who failed two attention-test questions or were excessively inconsistent on the three gastrointestinal questions that were presented twice in the survey for this particular purpose. The survey enquired about demographics, health-care visits, medications, somatisation, quality of life, and symptom-based criteria for Rome IV functional dyspepsia as well as for irritable bowel syndrome (IBS) and functional heartburn. We made subsequent comparisons between participants with Rome IV functional dyspepsia and controls without dyspepsia. The primary objective was to identify participants who fulfilled symptom-based criteria for Rome IV functional dyspepsia and categorise them into postprandial distress syndrome, epigastric pain syndrome, or overlapping subtypes. 6300 general population adults completed the health survey; 2100 each from the USA, Canada, and the UK. 369 responses were deemed inconsistent, leaving data for 5931 adults. Rome IV functional dyspepsia was significantly more prevalent in the USA (232 [12%] of 1949) than in Canada (167 [8%] of 1988) and the UK (152 [8%] of 1994; p<0·0001). The subtype distribution was 61% postprandial distress

  18. Effect of 3.0 MeV helium implantation on electrical characteristics of 4H-SiC BJTs

    Energy Technology Data Exchange (ETDEWEB)

    Usman, Muhammad; Hallen, Anders; Ghandi, Reza; Domeij, Martin, E-mail: musman@kth.s [Microelectronics and Applied Physics, School of Communication and Information Technology, Royal Institute of Technology (KTH), Electrum 229, 16440 Kista (Sweden)

    2010-11-01

    Degradation of 4H-SiC power bipolar junction transistors (BJTs) under the influence of a high-energy helium ion beam was studied. Epitaxially grown npn BJTs were implanted with 3.0 MeV helium in the fluence range of 10{sup 10}-10{sup 11} cm{sup -2}. The devices were characterized by their current-voltage (I-V) behaviour before and after the implantation, and the results showed a clear degradation of the output characteristics of the devices. Annealing these implanted devices increased the interface traps between passivation oxide and the semiconductor, resulting in an increase of base current in the low-voltage operation range.

  19. Steered molecular dynamics simulations of a bacterial type IV pilus reveal characteristics of an experimentally-observed, force-induced conformational transition

    Science.gov (United States)

    Baker, Joseph; Biais, Nicolas; Tama, Florence

    2011-10-01

    Type IV pili (T4P) are long, filamentous structures that emanate from the cellular surface of many infectious bacteria. They are built from a 158 amino acid long subunit called pilin. T4P can grow to many micrometers in length, and can withstand large tension forces. During the infection process, pili attach themselves to host cells, and therefore naturally find themselves under tension. We investigated the response of a T4 pilus to a pulling force using the method of steered molecular dynamics (SMD) simulation. Our simulations expose to the external environment an amino acid sequence initially hidden in the native filament, in agreement with experimental data. Therefore, our simulations might be probing the initial stage of the transition to a force-induced conformation of the T4 pilus. Additional exposed amino acid sequences that might be useful targets for drugs designed to mitigate bacterial infection were also predicted.

  20. Change of I-V characteristics of SiC diodes upon reactor irradiation; Modification des caracteristiques I-V de jonctions p-n au SiC du fait d'une irradiation dans un reacteur; Izmeneniya kharakteristik I-V vyrashchennogo v SiC perekhoda tipa p-n posle oblucheniya ego v reaktore; Modificaciones que sufren por irradiacion en un reactor las caracteristicas I-V de uniones p-n en SiC

    Energy Technology Data Exchange (ETDEWEB)

    Heerschap, M; De Coninck, R [Solid State Physics Dept., SCK-CEN, Mol (Belgium)

    1962-04-15

    In search for semiconductors, which can be used in high-flux reactors in order to measure flux distributions, we irradiated SiC p-n junctions in the Belgium BR-1 reactor. Two types of SiC-diodes of different origin have been irradiated. These junctions are grown in the Lely-furnace. The change in forward and reverse characteristics have been measured during and after irradiation up to temperatures of 150{sup o}C, while measurements up to a temperature of 500{sup o}C are in progress. It has been found that one type resists BR-1 neutrons up to an integrated flux of 10{sup 15} n/cm{sup 2}, while the other resists irradiation up to a flux of 10{sup 17} n/cm{sup 2}. The changes in characteristics are given as well as the result of some annealing experiments. (author) [French] En recherchant des semi-conducteurs pouvant servir a mesurer les distributions de flux dans les reacteurs a haut flux de neutrons, les auteurs ont irradie des jonctions p-n au SiC dans le reacteur belge BR-1. Deux types de diodes a SiC d'origines differentes ont ete ainsi irradies. Les jonctions en question sont preparees par etirage dans le four Lely. Les auteurs ont mesure les modifications subies par les caracteristiques I-V apres et pendant l'irradiation a des temperatures allant jusqu'a 150{sup o}C; ils poursuivent leurs mesures dans la gamme des temperatures allant de 150{sup o}C a 500{sup o}C. Us ont constate que l'un des types de diode a SiC resiste aux neutrons du reacteur BR-1 jusqu'a 10{sup 15} n/cm{sup 2}, tandis que l'autre type resiste a l'irradiation jusqu'a 10{sup 17} n/cm{sup 2}. Les auteurs indiquent les modifications subies par les caracteristiques, ainsi que le resultat de certaines experiences de recuit. (author) [Spanish] Los autores estan tratando de encontrar semiconductores con los que sea posible medir distribuciones de flujo en reactores de flujo elevado, y con este fin irradiaron uniones p-n del SiC en el reactor BR-1 de Belgica. Irradiaron dos tipos de diodos de SiC de

  1. Poly(3-hexylthiophene)/multiwalled carbon hybrid coaxial nanotubes: nanoscale rectification and photovoltaic characteristics.

    Science.gov (United States)

    Kim, Kihyun; Shin, Ji Won; Lee, Yong Baek; Cho, Mi Yeon; Lee, Suk Ho; Park, Dong Hyuk; Jang, Dong Kyu; Lee, Cheol Jin; Joo, Jinsoo

    2010-07-27

    We fabricate hybrid coaxial nanotubes (NTs) of multiwalled carbon nanotubes (MWCNTs) coated with light-emitting poly(3-hexylthiophene) (P3HT). The p-type P3HT material with a thickness of approximately 20 nm is electrochemically deposited onto the surface of the MWCNT. The formation of hybrid coaxial NTs of the P3HT/MWCNT is confirmed by a transmission electron microscope, FT-IR, and Raman spectra. The optical and structural properties of the hybrid NTs are characterized using ultraviolet and visible absorption, Raman, and photoluminescence (PL) spectra where, it is shown that the PL intensity of the P3HT materials decreases after the hybridization with the MWCNTs. The current-voltage (I-V) characteristics of the outer P3HT single NT show the semiconducting behavior, while ohmic behavior is observed for the inner single MWCNT. The I-V characteristics of the hybrid junction between the outer P3HT NT and the inner MWCNT, for the hybrid single NT, exhibit the characteristics of a diode (i.e., rectification), whose efficiency is clearly enhanced with light irradiation. The rectification effect of the hybrid single NT has been analyzed in terms of charge tunneling models. The quasi-photovoltaic effect is also observed at low bias for the P3HT/MWCNT hybrid single NT.

  2. Maximum Power Point tracking algorithm based on I-V characteristic of PV array under uniform and non-uniform conditions

    DEFF Research Database (Denmark)

    Kouchaki, Alireza; Iman-Eini, H.; Asaei, B.

    2012-01-01

    This paper presents a new algorithm based on characteristic equation of solar cells to determine the Maximum Power Point (MPP) of PV modules under partially shaded conditions (PSC). To achieve this goal, an analytic condition is introduced to determine uniform or non-uniform atmospheric condition...

  3. Development of methods for measuring materials nuclear characteristics, Phases, I, II, II and IV; Razvijanje metoda merenja nuklearnih karakteristika materijala, I, II, II i VI faza

    Energy Technology Data Exchange (ETDEWEB)

    Maglic, R [Boris Kidric Institute of Nuclear Sciences Vinca, Belgrade (Yugoslavia)

    1963-04-15

    This report contains the following phases of the project 'measurement of nuclear characteristics of reactor materials': nuclear performances of the neutron chopper; method for measuring total effective cross sections by transmission method on the chopper; review of methods for measuring activation cross sections; measurement of neutron spectra of the RA reactor and measurement of total effective cross section of gold by using the chopper.

  4. Schottky barrier parameters and low frequency noise characteristics of graphene-germanium Schottky barrier diode

    Science.gov (United States)

    Khurelbaatar, Zagarzusem; Kil, Yeon-Ho; Shim, Kyu-Hwan; Cho, Hyunjin; Kim, Myung-Jong; Lee, Sung-Nam; Jeong, Jae-chan; Hong, Hyobong; Choi, Chel-Jong

    2016-03-01

    We investigated the electrical properties of chemical vapor deposition-grown monolayer graphene/n-type germanium (Ge) Schottky barrier diodes (SBD) using current-voltage (I-V) characteristics and low frequency noise measurements. The Schottky barrier parameters of graphene/n-type Ge SBDs, such as Schottky barrier height (VB), ideality factor (n), and series resistance (Rs), were extracted using the forward I-V and Cheung's methods. The VB and n extracted from the forward ln(I)-V plot were found to be 0.63 eV and 1.78, respectively. In contrast, from Cheung method, the VB and n were calculated to be 0.53 eV and 1.76, respectively. Such a discrepancy between the values of VB calculated from the forward I-V and Cheung's methods indicated a deviation from the ideal thermionic emission of graphene/n-type Ge SBD associated with the voltage drop across graphene. The low frequency noise measurements performed at the frequencies in the range of 10 Hz-1 kHz showed that the graphene/n-type Ge SBD had 1/f γ frequency dependence, with γ ranging from 1.09 to 1.12, regardless of applied forward biases. Similar to forward-biased SBDs operating in the thermionic emission mode, the current noise power spectral density of graphene/n-type Ge SBD was linearly proportional to the forward current.

  5. IV treatment at home

    Science.gov (United States)

    ... Other IV treatments you may receive after you leave the hospital include: Treatment for hormone deficiencies Medicines for severe nausea that cancer chemotherapy or pregnancy may cause Patient-controlled analgesia (PCA) for pain (this is IV ...

  6. Effect of defect creation and migration on hump characteristics of a-InGaZnO thin film transistors under long-term drain bias stress with light illumination

    Science.gov (United States)

    Cho, Yong-Jung; Kim, Woo-Sic; Lee, Yeol-Hyeong; Park, Jeong Ki; Kim, Geon Tae; Kim, Ohyun

    2018-06-01

    We investigated the mechanism of formation of the hump that occurs in the current-voltage I-V characteristics of amorphous InGaZnO (a-IGZO) thin film transistors (TFTs) that are exposed to long-term drain bias stress under illumination. Transfer characteristics showed two-stage degradation under the stress. At the beginning of the stress, the I-V characteristics shifted in the negative direction with a degradation of subthreshold slope, but the hump phenomenon developed over time in the I-V characteristics. The development of the hump was related to creation of defects, especially ionized oxygen vacancies which act as shallow donor-like states near the conduction-band minimum in a-IGZO. To further investigate the hump phenomenon we measured a capacitance-voltage C-V curve and performed two-dimensional device simulation. Stretched-out C-V for the gate-to-drain capacitance and simulated electric field distribution which exhibited large electric field near the drain side of TFT indicated that VO2+ were generated near the drain side of TFT, but the hump was not induced when VO2+ only existed near the drain side. Therefore, the degradation behavior under DBITS occurred because VO2+ were created near the drain side, then were migrated to the source side of the TFT.

  7. A firefly algorithm approach for determining the parameters characteristics of solar cell

    Directory of Open Access Journals (Sweden)

    Mohamed LOUZAZNI

    2017-12-01

    Full Text Available A metaheuristic algorithm is proposed to describe the characteristics of solar cell. The I-V characteristics of solar cell present double nonlinearity in the presence of exponential and in the five parameters. Since, these parameters are unknown, it is important to predict these parameters for accurate modelling of I-V and P-V curves of solar cell. Moreover, firefly algorithm has attracted the intention to optimize the non-linear and complex systems, based on the flashing patterns and behaviour of firefly’s swarm. Besides, the proposed constrained objective function is derived from the current-voltage curve. Using the experimental current and voltage of commercial RTC France Company mono-crystalline silicon solar cell single diode at 33°C and 1000W/m² to predict the unknown parameters. The statistical errors are calculated to verify the accuracy of the results. The obtained results are compared with experimental data and other reported meta-heuristic optimization algorithms. In the end, the theoretical results confirm the validity and reliability of firefly algorithm in estimation the optimal parameters of the solar cell.

  8. Electronic Structure and I- V Characteristics of InSe Nanoribbons

    Science.gov (United States)

    Yao, A.-Long; Wang, Xue-Feng; Liu, Yu-Shen; Sun, Ya-Na

    2018-04-01

    We have studied the electronic structure and the current-voltage ( I-V) characteristics of one-dimensional InSe nanoribbons using the density functional theory combined with the nonequilibrium Green's function method. Nanoribbons having bare or H-passivated edges of types zigzag (Z), Klein (K), and armchair (A) are taken into account. Edge states are found to play an important role in determining their electronic properties. Edges Z and K are usually metallic in wide nanoribbons as well as their hydrogenated counterparts. Transition from semiconductor to metal is observed in hydrogenated nanoribbons HZZH as their width increases, due to the strong width dependence of energy difference between left and right edge states. Nevertheless, electronic structures of other nanoribbons vary with the width in a very limited scale. The I-V characteristics of bare nanoribbons ZZ and KK show strong negative differential resistance, due to spatial mismatch of wave functions in energy bands around the Fermi energy. Spin polarization in these nanoribbons is also predicted. In contrast, bare nanoribbons AA and their hydrogenated counterparts HAAH are semiconductors. The band gaps of nanoribbons AA (HAAH) are narrower (wider) than that of two-dimensional InSe monolayer and increase (decrease) with the nanoribbon width.

  9. Charge Transport and Photocurrent Generation Characteristics in Dye Solar Cells Containing Thermally Degraded N719 Dye Molecules

    DEFF Research Database (Denmark)

    Andersen, A. R.; Halme, J.; Lund, T.

    2011-01-01

    product (N719-TBP) on the performance parameters of the cells. Two types of dyed solar cells, based on either N719 or N719-TBP, have been characterized employing standard current-voltage (I-V) performance test, UV-vis optical spectroscopy, incident photon to current efficiency (IPCE), and electrochemical...

  10. Performance characteristics of CdTe drift ring detector

    Science.gov (United States)

    Alruhaili, A.; Sellin, P. J.; Lohstroh, A.; Veeramani, P.; Kazemi, S.; Veale, M. C.; Sawhney, K. J. S.; Kachkanov, V.

    2014-03-01

    CdTe and CdZnTe material is an excellent candidate for the fabrication of high energy X-ray spectroscopic detectors due to their good quantum efficiency and room temperature operation. The main material limitation is associated with the poor charge transport properties of holes. The motivation of this work is to investigate the performance characteristics of a detector fabricated with a drift ring geometry that is insensitive to the transport of holes. The performance of a prototype Ohmic CdTe drift ring detector fabricated by Acrorad with 3 drift rings is reported; measurements include room temperature current voltage characteristics (IV) and spectroscopic performance. The data shows that the energy resolution of the detector is limited by leakage current which is a combination of bulk and surface leakage currents. The energy resolution was studied as a function of incident X-ray position with an X-ray microbeam at the Diamond Light Source. Different ring biasing schemes were investigated and the results show that by increasing the lateral field (i.e. the bias gradient across the rings) the active area, evaluated by the detected count rate, increased significantly.

  11. Influence of Ce(III/Ce(IV - supplements on the Characteristics of Humidity Sensors with TiO2 Films Prepared via a Sol-gel Method

    Directory of Open Access Journals (Sweden)

    Kozhukharov, S.

    2013-04-01

    Full Text Available Humidity sensors have been prepared via a sol-gel method to deposit TiO2 films with additions of Ce-compounds on alumina substrates, with interdigitated silver palladium electrodes. Observations by scanning electron microscopy (SEM were performed in order to determine the surface morphology of the respective layers. Structural and compositional characterization was done by X-ray diffraction analysis (XRD, and energy dispersive X-ray spectroscopy (EDX for investigation of the relation between the film structures and the parameters of the respective sensors. The influence of Ce-compounds on the electrical characteristics of the samples as humidity sensing elements has been evaluated by an impedance analyzer.Los sensores de humedad han sido desarrollados mediante el método sol-gel para depositar películas superficiales basadas en TiO2 con adiciones de compuestos de cerio sobre sustratos de corindón y electrodos de aleación de plata y paladio. Se han realizado observaciones mediante el Microscopio Electrónico de Barrido (MEB para determinar la morfología superficial de las capas respectivas. Las caracterizaciones de la estructura y composición han sido realizadas mediante Difracción de Rayos X (DRX y espectroscopía de dispersión energética de rayos X (EDERX, con el fin de investigar la relación entre la estructura de las capas y los parámetros de los sensores respectivos. La influencia de los compuestos de cerio sobre las características eléctricas de los sensores de humedad obtenidos se ha evaluado mediante el análisis de impedancia eléctrica.

  12. Electrical characteristics of schottky barriers on 4H-SiC: The effects of barrier height nonuniformity

    Science.gov (United States)

    Skromme, B. J.; Luckowski, E.; Moore, K.; Bhatnagar, M.; Weitzel, C. E.; Gehoski, T.; Ganser, D.

    2000-03-01

    Electrical properties, including current-voltage (I-V) and capacitance-voltage (C-V) characteristics, have been measured on a large number of Ti, Ni, and Pt-based Schottky barrier diodes on 4H-SiC epilayers. Various nonideal behaviors are frequently observed, including ideality factors greater than one, anomalously low I-V barrier heights, and excess leakage currents at low forward bias and in reverse bias. The nonidealities are highly nonuniform across individual wafers and from wafer to wafer. We find a pronounced linear correlation between I-V barrier height and ideality factor for each metal, while C-V barrier heights remain constant. Electron beam induced current (EBIC) imaging strongly suggests that the nonidealities result from localized low barrier height patches. These patches are related to discrete crystal defects, which become visible as recombination centers in the EBIC images. Alternative explanations involving generation-recombination current, uniform interfacial layers, and effects related to the periphery are ruled out.

  13. Transport systems of Ventricaria ventricosa: I/V analysis of both membranes in series as a function of [K(+)](o).

    Science.gov (United States)

    Beilby, M J; Bisson, M A

    1999-09-01

    The current-voltage (I/V) profiles of Ventricaria (formerly Valonia) membranes were measured at a range of external potassium concentrations, [K(+)](o), from 0.1 to 100 mm. The conductance-voltage (G/V) characteristics were computed to facilitate better resolution of the profile change with time after exposure to different [K(+)](o). The resistance-voltage (R/V) characteristics were computed to attempt resolution of plasmalemma and tonoplast. Four basic electrophysiological stages emerged: (1) Uniform low resistance between -60 and +60 mV after the cell impalement. (2) High resistance between +50 and +150 for [K(+)](o) from 0.1 to 1.0 mm and hypotonic media. (3) High resistance between -150 and -20 mV for [K(+)](o) of 10 mm (close to natural seawater) and hypertonic media. (4) High resistance between -150 and +170 mV at [K(+)](o) of 100 mm. The changes between these states were slow, requiring minutes to hours and sometimes exhibiting spontaneous oscillations of the membrane p.d. (potential difference). Our analysis of the I/V data supports a previous hypothesis, that Ventricaria tonoplast is the more resistive membrane containing a pump, which transports K(+) into the vacuole to regulate turgor. We associate state (1) with the plasmalemma conductance being dominant and the K(+) pump at the tonoplast short-circuited probably by a K(+) channel, state (2) with the K(+) pump "off" or short-circuited at p.d.s more negative than +50 mV, state (3) with the K(+) pump "on, " and state (4) with the pump dominant, but affected by high K(+). A model for the Ventricaria membrane system is proposed.

  14. DFT coupled with NEGF study of ultra-sensitive HCN and HNC gases detection and distinct I-V response based on phosphorene.

    Science.gov (United States)

    Pang, Jiu; Yang, Qun; Ma, Xiaosong; Wang, Liming; Tan, Chunjian; Xiong, Daxi; Ye, Huaiyu; Chen, Xianping

    2017-11-22

    The sensing performances of pristine and X-doped phosphorene substrates (X = Al, Si, and S atoms) toward the adsorption of the toxic gases HCN and HNC were systematically investigated by first-principles simulations. The numerical results show that the pristine phosphorene is sensitive to HCN and HNC molecules with moderate adsorption energy, excellent charge transfer, high sensitivity and selectivity, implying its potential applications as excellent HCN and HNC sensors. In addition, the Al-doped phosphorene exhibits extremely high reactive activity toward HCN and HNC gases; thus, it has potential for use as a metal-free catalyst for activating or catalyzing HCN or HNC adsorbates. Moreover, the transport properties, i.e., current-voltage (I-V) characteristics, were calculated by the non-equilibrium Green's function (NEGF) method within the framework of the density functional theory (DFT). The obtained results reveal that the adsorbed HCN or HNC gas molecules have a remarkable impact on the electronic conductivity of phosphorene, and the zigzag direction of phosphorene is more sensitive to gas molecules than the armchair direction. The combination of the high sensitivity, superior selectivity, and moderate adsorption energy of pristine phosphorene toward HCN or HNC gas molecules adsorption, makes phosphorene an excellent candidate for HCN and HNC sensors.

  15. Current-voltage characteristics of SnO{sub 2}-Co{sub 3}O{sub 4}-Cr{sub 2}O{sub 3}-Sb{sub 2}O{sub 5} ceramics

    Energy Technology Data Exchange (ETDEWEB)

    Aguilar-Martinez, J A [Centro de Investigacion en Materiales Avanzados, S.C. (CIMAV), Alianza Norte 202, Parque de Investigacion e Innovacion Tecnologica (PIIT), Nueva Carretera Aeropuerto km. 10, Apodaca, Nuevo Leon, CP 66600 (Mexico); Glot, A B [Posgrado, Universidad Tecnologica de la Mixteca, Carretera Acatlima Km. 2.5, Huajuapan de Leon, Oaxaca, CP 69000 (Mexico); Gaponov, A V [Department of Radioelectronics, Dniepropetrovsk National University, Dniepropetrovsk 49050 (Ukraine); Hernandez, M B [Instituto de Mineria, Universidad Tecnologica de la Mixteca, Carretera Acatlima Km. 2.5, Huajuapan de Leon, Oaxaca, CP 69000 (Mexico); Guerrero-Paz, J, E-mail: josue.aguilar@cimav.edu.m [Particulate Materials Lab, Universidad Autonoma del Estado de Hidalgo, Pachuca, CP 42184 (Mexico)

    2009-10-21

    The effect of mechanical treatment in a planetary mill on the microstructure and electrical properties of tin dioxide based varistor ceramics in the system SnO{sub 2}-Co{sub 3}O{sub 4}-Cr{sub 2}O{sub 3}-Sb{sub 2}O{sub 5} sintered in the range 1150-1450 {sup 0}C was studied. The mechanical treatment leads to an increase in shrinkage, decrease in porosity, decrease in sample diameter, change in colour of the sintered samples from grey to black and enhancement of nonlinearity. For the sample sintered at 1350 {sup 0}C the mechanical treatment enhances the nonlinearity coefficient from 11 to 31 and decreases the electric field E{sub 1} (at 10{sup -3} A cm{sup -2}) from 3500 to 2800 V cm{sup -1}. The observed changes in physical properties are explained in terms of an additional size reduction of oxide particles and a better mixing of oxide powder followed by the formation of potential barriers at the grain boundaries throughout the whole sample. In spite of the low porosity, the low-field electrical conductivity of mechanically treated ceramics is significantly increased with the growth of relative humidity. A higher humidity sensitivity is found for mechanically treated ceramics with higher barrier height and higher nonlinearity coefficient.

  16. Generation IV national program

    International Nuclear Information System (INIS)

    Preville, M.; Sadhankar, R.; Brady, D.

    2007-01-01

    This paper outlines the Generation IV National Program. This program involves evolutionary and innovative design with significantly higher efficiencies (∼50% compared to present ∼30%) - sustainable, economical, safe, reliable and proliferation resistant - for future energy security. The Generation IV Forum (GIF) effectively leverages the resources of the participants to meet these goals. Ten countries signed the GIF Charter in 2001

  17. A FAST study of quasi-static structure ("Inverted-V") potential drops and their latitudinal dependence in the premidnight sector and ramifications for the current-voltage relationship

    Science.gov (United States)

    Dombeck, J.; Cattell, C.; McFadden, J.

    2013-09-01

    Utilizing FAST satellite electron measurements, we present the first reported investigation of the dependency on latitude of quasi-static structure ("inverted-V") potential drop magnitude (Φ). A trend of lower Φ at lower latitudes in the premidnight sector on field lines with dark foot points was observed. This trend is supported both statistically and in individual satellite crossings. The existence of two distinct peaks in occurrence probability for Φ was also observed: one between ~2 kV and 10 kV and the other at somewhat less than 1 kV. The relative occurrence of structures with Φ in the higher (>2 kV) peak is significantly reduced with decreasing latitude. This partially accounts for the statistical trend of lower potential drop magnitudes at lower latitudes. The two Φ occurrence frequency peaks correspond to two different regimes (one with eΦ/kTe ~ or > 1 and one with eΦ/kTe current-voltage relation where source electron density rather than Φ is most directly controlled by the field-aligned current density. These observations and their ramifications represent a significant step forward in the understanding of field-aligned currents, auroral acceleration, and magnetospheric-ionospheric coupling.

  18. Neptunium (IV) oxalate solubility

    International Nuclear Information System (INIS)

    Luerkens, D.W.

    1983-07-01

    The equilibrium solubility of neptunium (IV) oxalate in nitric/oxalic acid solutions was determined at 22 0 C, 45 0 C, and 60 0 C. The concentrations of nitric/oxalic acid solutions represented a wide range of free oxalate ion concentration. A mathematical solubility model was developed which is based on the formation of the known complexes of neptunium (IV) oxalate. the solubility model uses a simplified concentration parameter which is proportional to the free oxalate ion concentration. The solubility model can be used to estimate the equilibrium solubility of neptunium (IV) oxalate over a wide range of oxalic and nitric acid concentrations at each temperature

  19. The effect of asymmetric barrier layers in the waveguide region on power characteristics of QW lasers

    DEFF Research Database (Denmark)

    Zubov, F. I.; Zhukov, A. E.; Shernyakov, Yu M.

    2015-01-01

    Current-voltage and light-current characteristics of quantum-well lasers have been studied at high drive currents. The introduction of asymmetric barrier layers adjacent to the active region caused a significant suppression of the nonlinearity in the light-current characteristic and an increase...

  20. NNDSS - Table IV. Tuberculosis

    Data.gov (United States)

    U.S. Department of Health & Human Services — NNDSS - Table IV. Tuberculosis - 2016.This Table includes total number of cases reported in the United States, by region and by states, in accordance with the...

  1. NNDSS - Table IV. Tuberculosis

    Data.gov (United States)

    U.S. Department of Health & Human Services — NNDSS - Table IV. Tuberculosis - 2014.This Table includes total number of cases reported in the United States, by region and by states, in accordance with the...

  2. NNDSS - Table IV. Tuberculosis

    Data.gov (United States)

    U.S. Department of Health & Human Services — NNDSS - Table IV. Tuberculosis - 2015.This Table includes total number of cases reported in the United States, by region and by states, in accordance with the...

  3. SAGE IV Pathfinder

    Data.gov (United States)

    National Aeronautics and Space Administration — Utilizing a unique, new occultation technique involving imaging, the SAGE IV concept will meet or exceed the quality of previous SAGE measurements at a small...

  4. Crystalline cerium(IV) phosphates

    International Nuclear Information System (INIS)

    Herman, R.G.; Clearfield, A.

    1976-01-01

    The ion exchange behaviour of seven crystalline cerium(IV) phosphates towards some of the alkali metal cations is described. Only two of the compounds (A and C) possess ion exchange properties in acidic solutions. Four others show some ion exchange characteristics in basic media with some of the alkali cations. Compound G does not behave as an ion exchanger in solutions of pH + , but show very little Na + uptake. Compound E undergoes ion exchange with Na + and Cs + , but not with Li+. Both Li + and Na + are sorbed by compounds A and C. The results are indicative of structures which show steric exclusion phenomena. (author)

  5. IV access in dental practice.

    LENUS (Irish Health Repository)

    Fitzpatrick, J J

    2009-04-01

    Intravenous (IV) access is a valuable skill for dental practitioners in emergency situations and in IV sedation. However, many people feel some apprehension about performing this procedure. This article explains the basic principles behind IV access, and the relevant anatomy and physiology, as well as giving a step-by-step guide to placing an IV cannula.

  6. Internet Economics IV

    Science.gov (United States)

    2004-08-01

    edts.): Internet Economics IV Technical Report No. 2004-04, August 2004 Information Systems Laboratory IIS, Departement of Computer Science University of...level agreements (SLA), Information technology (IT), Internet address, Internet service provider 16. PRICE CODE 17. SECURITY CLASSIFICATION 18... technology and its economic impacts in the Internet world today. The second talk addresses the area of AAA protocol, summarizing authentication

  7. Uranium (IV) carboxylates - I

    Energy Technology Data Exchange (ETDEWEB)

    Satpathy, K C; Patnaik, A K [Sambalpur Univ. (India). Dept. of Chemistry

    1975-11-01

    A few uranium(IV) carboxylates with monochloro and trichloro acetic acid, glycine, malic, citric, adipic, o-toluic, anthranilic and salicylic acids have been prepared by photolytic methods. The I.R. spectra of these compounds are recorded and basing on the spectral data, structure of the compounds have been suggested.

  8. PLATO IV Accountancy Index.

    Science.gov (United States)

    Pondy, Dorothy, Comp.

    The catalog was compiled to assist instructors in planning community college and university curricula using the 48 computer-assisted accountancy lessons available on PLATO IV (Programmed Logic for Automatic Teaching Operation) for first semester accounting courses. It contains information on lesson access, lists of acceptable abbreviations for…

  9. Enhanced Design Alternative IV

    International Nuclear Information System (INIS)

    Kramer, N.E.

    1999-01-01

    This report evaluates Enhanced Design Alternative (EDA) IV as part of the second phase of the License Application Design Selection (LADS) effort. The EDA IV concept was compared to the VA reference design using criteria from the Design Input Request for LADS Phase II EDA Evaluations (CRWMS M and O 1999b) and (CRWMS M and O 1999f). Briefly, the EDA IV concept arranges the waste packages close together in an emplacement configuration known as line load. Continuous pre-closure ventilation keeps the waste packages from exceeding their 350 C cladding and 200 C (4.3.6) drift wall temperature limits. This EDA concept keeps relatively high, uniform emplacement drift temperatures (post-closure) to drive water away from the repository and thus dry out the pillars between emplacement drifts. The waste package is shielded to permit human access to emplacement drifts and includes an integral filler inside the package to reduce the amount of water that can contact the waste form. Closure of the repository is desired 50 years after first waste is emplaced. Both backfill and drip shields will be emplaced at closure to improve post-closure performance. The EDA IV concept includes more defense-in-depth layers than the VA reference design because of its backfill, drip shield, waste package shielding, and integral filler features. These features contribute to the low dose-rate to the public achieved during the first 10,000 years of repository life as shown in Figure 3. Investigation of the EDA IV concept has led to the following general conclusions: (1) The total life cycle cost for EDA IV is about $21.7 billion which equates to a $11.3 billion net present value (both figures rounded up). (2) The incidence of design basis events for EDA IV is similar to the VA reference design. (3) The emplacement of the waste packages in drifts will be similar to the VA reference design. However, heavier equipment may be required because the shielded waste package will be heavier. (4) The heavier

  10. Schottky barrier diode based on β-Ga2O3 (100) single crystal substrate and its temperature-dependent electrical characteristics

    Science.gov (United States)

    He, Qiming; Mu, Wenxiang; Dong, Hang; Long, Shibing; Jia, Zhitai; Lv, Hangbing; Liu, Qi; Tang, Minghua; Tao, Xutang; Liu, Ming

    2017-02-01

    The Pt/β-Ga2O3 Schottky barrier diode and its temperature-dependent current-voltage characteristics were investigated for power device application. The edge-defined film-fed growth (EFG) technique was utilized to grow the (100)-oriented β-Ga2O3 single crystal substrate that shows good crystal quality characterized by X-ray diffraction and high resolution transmission electron microscope. Ohmic and Schottky electrodes were fabricated by depositing Ti and Pt metals on the two surfaces, respectively. Through the current-voltage (I-V) measurement under different temperature and the thermionic emission modeling, the fabricated Pt/β-Ga2O3 Schottky diode was found to show good performances at room temperature, including rectification ratio of 1010, ideality factor (n) of 1.1, Schottky barrier height (ΦB) of 1.39 eV, threshold voltage (Vbi) of 1.07 V, ON-resistance (RON) of 12.5 mΩ.cm2, forward current density at 2 V (J@2V) of 56 A/cm2, and saturation current density (J0) of 2 × 10-16 A/cm2. The effective donor concentration Nd - Na was calculated to be about 2.3 × 1014 cm3. Good temperature dependent performance was also found in the device. The Schottky barrier height was estimated to be about 1.3 eV-1.39 eV at temperatures ranging from room temperature to 150 °C. With increasing temperature, parameters such as RON and J@2V become better, proving that the diode can work well at high temperature. The EFG grown β-Ga2O3 single crystal is a promising material to be used in the power devices.

  11. Peculiarities of electrooptical characteristics of gallium phosphide light-emitting diodes in high injection level conditions

    Directory of Open Access Journals (Sweden)

    O. M. Hontaruk

    2015-04-01

    Full Text Available Electroluminescence of green N-doped gallium phosphide light-emitting diodes was studied. The negative differential resistance region in the current-voltage characteristics was found at low temperature (Т ≤ 90 К. Possible reason of this phenomenon is the redistribution of recombinational flows between annihilation channels on isolated nitrogen atoms and annihilation channel on the NN1 pairs.

  12. A sputnik IV saga

    Science.gov (United States)

    Lundquist, Charles A.

    2009-12-01

    The Sputnik IV launch occurred on May 15, 1960. On May 19, an attempt to deorbit a 'space cabin' failed and the cabin went into a higher orbit. The orbit of the cabin was monitored and Moonwatch volunteer satellite tracking teams were alerted to watch for the vehicle demise. On September 5, 1962, several team members from Milwaukee, Wisconsin made observations starting at 4:49 a.m. of a fireball following the predicted orbit of Sputnik IV. Requests went out to report any objects found under the fireball path. An early morning police patrol in Manitowoc had noticed a metal object on a street and had moved it to the curb. Later the officers recovered the object and had it dropped off at the Milwaukee Journal. The Moonwarch team got the object and reported the situation to Moonwatch Headquarters at the Smithsonian Astrophysical Observatory. A team member flew to Cambridge with the object. It was a solid, 9.49 kg piece of steel with a slag-like layer attached to it. Subsequent analyses showed that it contained radioactive nuclei produced by cosmic ray exposure in space. The scientists at the Observatory quickly recognized that measurements of its induced radioactivity could serve as a calibration for similar measurements of recently fallen nickel-iron meteorites. Concurrently, the Observatory directorate informed government agencies that a fragment from Sputnik IV had been recovered. Coincidently, a debate in the UN Committee on Peaceful Uses of Outer Space involved the issue of liability for damage caused by falling satellite fragments. On September 12, the Observatory delivered the bulk of the fragment to the US Delegation to the UN. Two days later, the fragment was used by US Ambassador Francis Plimpton as an exhibit that the time had come to agree on liability for damage from satellite debris. He offered the Sputnik IV fragment to USSR Ambassador P.D. Morozov, who refused the offer. On October 23, Drs. Alla Massevitch and E.K. Federov of the USSR visited the

  13. Effect of a PEDOT:PSS modified layer on the electrical characteristics of flexible memristive devices based on graphene oxide:polyvinylpyrrolidone nanocomposites

    Science.gov (United States)

    Kim, Woo Kyum; Wu, Chaoxing; Kim, Tae Whan

    2018-06-01

    The electrical characteristics of flexible memristive devices utilizing a graphene oxide (GO):polyvinylpyrrolidone (PVP) nanocomposite charge-trapping layer with a poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS)-modified layer fabricated on an indium-tin-oxide (ITO)-coated polyethylene glycol naphthalate (PEN) substrate were investigated. Current-voltage (I-V) curves for the Al/GO:PVP/PEDOT:PSS/ITO/PEN devices showed remarkable hysteresis behaviors before and after bending. The maximum memory margins of the devices before and after 100 bending cycles were approximately 7.69 × 103 and 5.16 × 102, respectively. The devices showed nonvolatile memory effect with a retention time of more than 1 × 104 s. The "Reset" voltages were distributed between 2.3 and 3.5 V, and the "Set" voltages were dispersed between -0.7 and -0.2 V, indicative of excellent, uniform electrical performance. The endurance number of ON/OFF-switching and bending cycles for the devices was 1 × 102, respectively. The bipolar resistive switching behavior was explained on the basis of I-V results. In particular, the bipolar resistive switching behaviors of the LRS and the HRS for the devices are dominated by the Ohmic and space charge current mechanisms, respectively.

  14. Oxide Structure Dependence of SiO2/SiOx/3C-SiC/n-Type Si Nonvolatile Resistive Memory on Memory Operation Characteristics

    Science.gov (United States)

    Yamaguchi, Yuichiro; Shouji, Masatsugu; Suda, Yoshiyuki

    2012-11-01

    We have investigated the dependence of the oxide layer structure of our previously proposed metal/SiO2/SiOx/3C-SiC/n-Si/metal metal-insulator-semiconductor (MIS) resistive memory device on the memory operation characteristics. The current-voltage (I-V) measurement and X-ray photoemission spectroscopy results suggest that SiOx defect states mainly caused by the oxidation of 3C-SiC at temperatures below 1000 °C are related to the hysteresis memory behavior in the I-V curve. By restricting the SiOx interface region, the number of switching cycles and the on/off current ratio are more enhanced. Compared with a memory device formed by one-step or two-step oxidation of 3C-SiC, a memory device formed by one-step oxidation of Si/3C-SiC exhibits a more restrictive SiOx interface with a more definitive SiO2 layer and higher memory performances for both the endurance switching cycle and on/off current ratio.

  15. High-temperature Schottky diode characteristics of bulk ZnO

    Energy Technology Data Exchange (ETDEWEB)

    Guer, Emre; Tuezemen, S; Kilic, Bayram; Coskun, C [Department of Physics, Faculty of Arts and Sciences, Atatuerk University, 25240 Erzurum (Turkey)

    2007-05-16

    Current-voltage (I-V) measurements of Ag/n-ZnO have been carried out at temperatures of 200-500 K in order to understand the temperature dependence of the diode characteristics. Forward-bias I-V analysis results in a Schottky barrier height of 0.82 eV and an ideality factor of 1.55 at room temperature. The barrier height of 0.74 eV and Richardson constant of 0.248 A K{sup -2} cm{sup -2} were also calculated from the Richardson plot, which shows nearly linear characteristics in the temperature range 240-440 K. From the nk{sub b}T/q versus k{sub b}T/q graph, where n is ideality factor, k{sub b} the Boltzmann constant, T the temperature and q the electronic charge we deduce that thermionic field emission (TFE) is dominant in the charge transport mechanism. At higher sample temperatures (>440 K), a trap-assisted tunnelling mechanism is proposed due to the existence of a deep donor situated at E{sub c}-0.62 eV with 3.3 x 10{sup -15} cm{sup 2} capture cross section observed by both deep-level transient spectroscopy (DLTS) and lnI{sub 0} versus 1/k{sub b}T plots. The ideality factor almost remains constant in the temperature range 240-400 K, which shows the stability of the Schottky contact in this temperature range.

  16. Vortex depinning as a nonequilibrium phase transition phenomenon: Scaling of current-voltage curves near the low and the high critical-current states in 2 H -Nb S2 single crystals

    Science.gov (United States)

    Bag, Biplab; Sivananda, Dibya J.; Mandal, Pabitra; Banerjee, S. S.; Sood, A. K.; Grover, A. K.

    2018-04-01

    The vortex depinning phenomenon in single crystals of 2 H -Nb S2 superconductors is used as a prototype for investigating properties of the nonequilibrium (NEQ) depinning phase transition. The 2 H -Nb S2 is a unique system as it exhibits two distinct depinning thresholds, viz., a lower critical current Icl and a higher one Ich. While Icl is related to depinning of a conventional, static (pinned) vortex state, the state with Ich is achieved via a negative differential resistance (NDR) transition where the velocity abruptly drops. Using a generalized finite-temperature scaling ansatz, we study the scaling of current (I)-voltage (V) curves measured across Icl and Ich. Our analysis shows that for I >Icl , the moving vortex state exhibits Arrhenius-like thermally activated flow behavior. This feature persists up to a current value where an inflexion in the IV curves is encountered. While past measurements have often reported similar inflexion, our analysis shows that the inflexion is a signature of a NEQ phase transformation from a thermally activated moving vortex phase to a free flowing phase. Beyond this inflection in IV, a large vortex velocity flow regime is encountered in the 2 H -Nb S2 system, wherein the Bardeen-Stephen flux flow limit is crossed. In this regime the NDR transition is encountered, leading to the high Ich state. The IV curves above Ich we show do not obey the generalized finite-temperature scaling ansatz (as obeyed near Icl). Instead, they scale according to the Fisher's scaling form [Fisher, Phys. Rev. B 31, 1396 (1985), 10.1103/PhysRevB.31.1396] where we show thermal fluctuations do not affect the vortex flow, unlike that found for depinning near Icl.

  17. Current Transport Mechanisms and Capacitance Characteristic in the InN/InP Schottky Structures

    Directory of Open Access Journals (Sweden)

    K. AMEUR

    2014-05-01

    Full Text Available In this work, electrical characterization of the current-voltage and capacitance- voltage curves for the Metal/InN/InP Schottky structures are investigated. We have studied electrically thin InN films realized by the nitridation of InP (100 substrates using a Glow Discharge Source (GDS in ultra high vacuum. The I (V curves have exhibited anomalous two-step (kink forward bias behaviour; a suitable fit was only obtained by using a model of two discrete diodes in parallel. Thus, we have calculated, using I(V and C(V curves of Hg/InN/InP Schottky structures, the ideality factor n, the saturation current Is, the barrier height jB, the series resistance Rs, the doping concentration Nd and the diffusion voltage Vd. We have also presented the band diagram of this heterojunction which indicates the presence of a channel formed by holes at the interface InN/InP which explain by the presence of two-dimensional electron gas (2-DEG and this was noticed in the presentation of characteristics C(V.

  18. Metastable Electrical Characteristics of Polycrystalline Thin-Film Photovoltaic Modules upon Exposure and Stabilization: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Deline, C. A.; del Cueto, J. A.; Albin, D. S.; Rummel, S. R.

    2011-09-01

    The significant features of a series of stabilization experiments conducted at the National Renewable Energy Laboratory (NREL) between May 2009 and the present are reported. These experiments evaluated a procedure to stabilize the measured performance of thin-film polycrystalline cadmium telluride (CdTe) and copper indium gallium diselenide (CIGS) thin-film photovoltaic (PV) modules. The current-voltage (I-V) characteristics of CdTe and CIGS thin-film PV devices and modules exhibit transitory changes in electrical performance after thermal exposure in the dark and/or bias and light exposures. We present the results of our case studies of module performance versus exposure: light-soaked at 65 degrees C; exposed in the dark under forward bias at 65 degrees C; and, finally, longer-term outdoor exposure. We find that stabilization can be achieved to varying degrees using either light-soaking or dark bias methods and that the existing IEC 61646 light-soaking interval may be appropriate for CdTe and CIGS modules with one caveat: it is likely that at least three exposure intervals are required for stabilization.

  19. Fabrication of hydrogel-coated single conical nanochannels exhibiting controllable ion rectification characteristics.

    Science.gov (United States)

    Wang, Linlin; Zhang, Huacheng; Yang, Zhe; Zhou, Jianjun; Wen, Liping; Li, Lin; Jiang, Lei

    2015-03-07

    Heterogeneous nanochannel materials that endow new functionalities different to the intrinsic properties of two original nanoporous materials have wide potential applications in nanofluidics, energy conversion, and biosensors. Herein, we report novel, interesting hydrogel-composited nanochannel devices with regulatable ion rectification characteristics. The heterogeneous nanochannel devices were constructed by selectively coating the tip side, base side, or both sides of a single conical nanochannel membrane with thin agar hydrogel layers. The tunable ion current rectification of the nanochannels in the three different coating states was systematically demonstrated by current-voltage (I-V) curves. The asymmetric ionic transport property of the conical nanochannel was further strengthened in the tip-coating state and weakened in the base-coating state, whereas the conical nanochannel showed nearly symmetric ionic transport in the dual-coating state. Repeated experiments presented insight into the good stability and reversibility of the three coating states of the hydrogel-nanochannel-integrated systems. This work, as an example, may provide a new strategy to further design and develop multifunctional gel-nanochannel heterogeneous smart porous nanomaterials.

  20. Determination of bulk and interface density of states in metal oxide semiconductor thin-film transistors by using capacitance-voltage characteristics

    Science.gov (United States)

    Wei, Xixiong; Deng, Wanling; Fang, Jielin; Ma, Xiaoyu; Huang, Junkai

    2017-10-01

    A physical-based straightforward extraction technique for interface and bulk density of states in metal oxide semiconductor thin film transistors (TFTs) is proposed by using the capacitance-voltage (C-V) characteristics. The interface trap density distribution with energy has been extracted from the analysis of capacitance-voltage characteristics. Using the obtained interface state distribution, the bulk trap density has been determined. With this method, for the interface trap density, it is found that deep state density nearing the mid-gap is approximately constant and tail states density increases exponentially with energy; for the bulk trap density, it is a superposition of exponential deep states and exponential tail states. The validity of the extraction is verified by comparisons with the measured current-voltage (I-V) characteristics and the simulation results by the technology computer-aided design (TCAD) model. This extraction method uses non-numerical iteration which is simple, fast and accurate. Therefore, it is very useful for TFT device characterization.

  1. Thermal annealing behaviour of Pd Schottky contacts on melt-grown single crystal ZnO studied by IV and CV measurements

    Energy Technology Data Exchange (ETDEWEB)

    Mtangi, W., E-mail: wilbert.mtangi@up.ac.za [Department of Physics, University of Pretoria, Private Bag X20, Hatfield 0028 (South Africa); Auret, F.D.; Chawanda, A.; Janse van Rensburg, P.J.; Coelho, S.M.M.; Nel, J.M.; Diale, M.; Schalkwyk, L. van [Department of Physics, University of Pretoria, Private Bag X20, Hatfield 0028 (South Africa); Nyamhere, C. [Department of Physics, P.O. Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa)

    2012-02-15

    Highlights: Black-Right-Pointing-Pointer Highly rectifying Pd/ZnO contacts have been fabricated. Black-Right-Pointing-Pointer The rectification behaviour decrease with annealing temperature. Black-Right-Pointing-Pointer The surface donor concentration increases with increase in annealing temperature. Black-Right-Pointing-Pointer The depletion layer width at a specific reverse voltage decreases with increase in annealing temperature. - Abstract: Current-voltage (IV) and capacitance-voltage (CV) measurement techniques have successfully been employed to study the effects of annealing highly rectifying Pd/ZnO Schottky contacts. IV results reveal a decrease in the contact quality with increasing annealing temperature as confirmed by a decrease in the zero bias barrier height and an increase in the reverse current measured at -1.5 V. An average barrier height of (0.77 {+-} 0.02) eV has been calculated by assuming pure thermionic emission for the as-deposited material and as (0.56 {+-} 0.03) eV after annealing at 550 Degree-Sign C. The reverse current has been measured as (2.10 {+-} 0.01) Multiplication-Sign 10{sup -10} A for the as-deposited and increases by 5 orders of magnitude after annealing at 550 Degree-Sign C to (1.56 {+-} 0.01) Multiplication-Sign 10{sup -5} A. The depletion layer width measured at -2.0 V has shown a strong dependence on thermal annealing as it decreases from 1.09 {mu}m after annealing at 200 Degree-Sign C to 0.24 {mu}m after annealing at 500 Degree-Sign C, resulting in the modification of the dopant concentration within the depletion region and hence the current flowing through the interface from pure thermionic emission to thermionic field emission with the donor concentrations increasing from 6.90 Multiplication-Sign 10{sup 15} cm{sup -3} at 200 Degree-Sign C to 6.06 Multiplication-Sign 10{sup 16} cm{sup -3} after annealing at 550 Degree-Sign C. This increase in the volume concentration has been explained as an effect of a conductive channel

  2. The Electrical Characteristics of The N-Organic Semiconductor/P-Inorganic Semiconductor Diode

    International Nuclear Information System (INIS)

    Aydin, M. E.

    2008-01-01

    n-organic semiconductor (PEDOT) / p-inorganic semiconductor Si diode was formed by deep coating method. The method has been achieved by coating n-inorganic semiconductor PEDOT on top of p-inorganic semiconductor. The n-organic semiconductor PEDOT/ p-inorganic semiconductor diode demonstrated rectifying behavior by the current-voltage (I-V) curves studied at room temperature. The barrier height , ideality factor values were obtained as of 0.88 eV and 1.95 respectively. The diode showed non-ideal I-V behavior with an ideality factor greater than unity that could be ascribed to the interfacial layer

  3. Analysis of the electrical characteristics of Zn/ZnSe/n-Si/Au-Sb structure fabricated using SILAR method as a function of temperature

    Energy Technology Data Exchange (ETDEWEB)

    Guezeldir, B. [Department of Physics, Faculty of Sciences, University of Atatuerk, 25240 Erzurum (Turkey); Saglam, M., E-mail: msaglam@atauni.edu.t [Department of Physics, Faculty of Sciences, University of Atatuerk, 25240 Erzurum (Turkey); Ates, A. [Department of Physics, Faculty of Sciences, University of Atatuerk, 25240 Erzurum (Turkey)

    2010-09-10

    The Successive Ionic Layer Adsorption and Reaction (SILAR) method has been used to deposit ZnSe thin film onto Si substrate to obtain the Zn/ZnSe/n-Si/Au-Sb sandwich structure. The X-Ray Diffraction (XRD) and Scanning Electron Microscope (SEM) methods are used to investigate the structural and morphological properties of films. The XRD and SEM studies reveal that the films are covered well on Si substrate and have good polycrystalline structure and crystalline levels. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics of this structure have been investigated as a function of the temperature (80-300 K) with 20 K steps. The ideality factor (n) and zero-bias barrier height ({Phi}{sub b0}) value which obtained from I-V curves were found to be strongly temperature dependent. While {Phi}{sub b0} increases with increasing temperature, n decreases. This behavior of the {Phi}{sub b0} and n can be attributed to barrier inhomogeneities at the metal-semiconductor (M-S) interface. The temperature dependence of the I-V characteristics of the Zn/ZnSe/n-Si/Au-Sb structure can reveal the existence of a double Gaussian distribution. The mean barrier height and the Richardson constant values are obtained as 0.925 eV and 1.140 eV, 130 A/cm{sup 2} K{sup 2} and 127 A/cm{sup 2} K{sup 2}, from the modified Richardson plot, respectively. Furthermore, the barrier height and carrier concentration are calculated from reverse bias C{sup -2}-V measurements at 200 kHz frequency as a function of the temperature.

  4. Thermodynamic characteristics of systems with solid solutions composed of crystal hydrates of lanthanide and yttrium chlorides, at 250C. III. Systems of Roozeboom's type IV, with restricted solid solutions

    International Nuclear Information System (INIS)

    Sokolova, N.P.

    1983-01-01

    The values of the activity, the activity coefficients, the free energy of mixing and the excess free energy of mixing have been calculated for CeCl 3 -LnCl 3 -H 2 O systems (where Ln identical with Sm, Gd, Dy, Ho, Er, Y) containing solid solutions of types IV and IVa. It is shown that the stability of the solid solutions decreases with increasing difference between the radii of the cations of cerium and the second lanthanide, which enter into the composition of the components of the solid solutions. The factors determining the composition of a liquid solution corresponding to the eutonic point are specified

  5. Hepatic imaging in stage IV-S neuroblastoma

    International Nuclear Information System (INIS)

    Franken, E.A. Jr.; Smith, W.L.; Iowa Univ., Iowa City; Cohen, M.D.; Kisker, C.T.; Platz, C.E.

    1986-01-01

    Stage IV-S neuroblastoma describes a group of infants with tumor spread limited to liver, skin, or bone marrow. Such patients, who constitute about 25% of affected infants with neuroblastoma, may expect spontaneous tumor remission. We report 18 infants with Stage IV-S neuroblastoma, 83% of whom had liver involvement. Imaging investigations included Technetium 99m sulfur colloid scan, ultrasound, and CT. Two patterns of liver metastasis were noted: ill-defined nodules or diffuse tumor throughout the liver. Distinction of normal and abnormal liver with diffuse type metastasis could be quite difficult, particularly with liver scans. We conclude that patients with Stage IV-S neuroblastoma have ultrasound or CT examination as an initial workup, with nuclear medicine scans reserved for followup studies. (orig.)

  6. Diaquatetrabromidotin(IV trihydrate

    Directory of Open Access Journals (Sweden)

    Fei Ye

    2012-09-01

    Full Text Available The title compound, [SnBr4(H2O2]·3H2O, forms large colourless crystals in originally sealed samples of tin tetrabromide. It constitutes the first structurally characterized hydrate of SnBr4 and is isostructural with the corresponding hydrate of SnCl4. It is composed of SnIV atoms octahedrally coordinated by four Br atoms and two cis-related water molecules. The octahedra exhibit site symmetry 2. They are arranged into columns along [001] via medium–strong O—H...O hydrogen bonds involving the two lattice water molecules (one situated on a twofold rotation axis while the chains are interconnected via longer O—H...Br hydrogen bonds, forming a three-dimensional network.

  7. Cyclopentadienyluranium(IV) acetylacetonates

    International Nuclear Information System (INIS)

    Bagnall, K.W.; Edwards, J.; Rickard, C.E.F.; Tempest, A.C.

    1979-01-01

    Cyclopentadienyluranium(IV) acetylacetonate complexes, (eta 5 C 5 H 5 )UClsub(3-x)(acac)sub(x), where x = 1 or 2, and the corresponding bis triphenylphosphine oxide (tppo) complexes have been prepared. The bis cyclopentadienyl complexes, (eta 5 C 5 H 5 ) 2 U(acac) 2 and (eta 5 C 5 H 5 ) 2 UCl(acac)(tppo) 2 have also been prepared and are stable with respect to disproportionation, whereas (eta 5 C 5 H 5 ) 2 UCl(acac) is not. The IR and UV/visible spectra of the complexes are reported, together with some additional information on the UCl 2 (acac) 2 thf and -tppo systems. (author)

  8. Effects of irradiation on device characteristics of transistor structures based on AlGaN/GaN

    International Nuclear Information System (INIS)

    Kargin, N.I.; Gromov, D.V.; Kuznetsov, A.L.; Grekhov, M.M.

    2014-01-01

    A technologic scheme was developed, and transistor structures, based on hetero-structures AlGaN/GaN, were made. Current-voltage characteristics of the transistor structures and current-amplification and power-amplification cutoff frequencies have been presented in the paper [ru

  9. Phosphorene as a Superior Gas Sensor: Selective Adsorption and Distinct I-V Response.

    Science.gov (United States)

    Kou, Liangzhi; Frauenheim, Thomas; Chen, Changfeng

    2014-08-07

    Recent reports on the fabrication of phosphorene, that is, mono- or few-layer black phosphorus, have raised exciting prospects of an outstanding two-dimensional (2D) material that exhibits excellent properties for nanodevice applications. Here, we study by first-principles calculations the adsorption of CO, CO2, NH3, NO, and NO2 gas molecules on a monolayer phosphorene. Our results predict superior sensing performance of phosphorene that rivals or even surpasses that of other 2D materials such as graphene and MoS2. We determine the optimal adsorption positions of these molecules on the phosphorene and identify molecular doping, that is, charge transfer between the molecules and phosphorene, as the driving mechanism for the high adsorption strength. We further calculated the current-voltage (I-V) relation using the nonequilibrium Green's function (NEGF) formalism. The transport features show large (1-2 orders of magnitude) anisotropy along different (armchair or zigzag) directions, which is consistent with the anisotropic electronic band structure of phosphorene. Remarkably, the I-V relation exhibits distinct responses with a marked change of the I-V relation along either the armchair or the zigzag directions depending on the type of molecules. Such selectivity and sensitivity to adsorption makes phosphorene a superior gas sensor that promises wide-ranging applications.

  10. Congenital bilateral neuroblastoma (stage IV-S): case report

    International Nuclear Information System (INIS)

    Lee, Jeong Hee; Lee, Hee Jung; Woo, Seong Ku; Lee, Sang Rak; Kim, Heung Sik

    2002-01-01

    Congenital neonatal neuroblastoma is not uncommon but bilateral adrenal neuroblastoma is rare, accounting for about ten percent of neuroblastomas in children. We report the US the MR findings of a stage IV-S congenital bilateral neuroblastoma occurring in a one-day-old neonate

  11. Analysis of output characteristics of PV modules under natural sunlight; Shizen taiyokoka ni okeru taiyo denchi module shutsuryoku tokusei no kaiseki

    Energy Technology Data Exchange (ETDEWEB)

    Murai, Y.; Igari, S. [Japan Quality Assurance of Organization, Tokyo (Japan)

    1997-11-25

    The paper measured current/voltage characteristics of various PV modules under natural light and analyzed various characteristics such as generated output and module power generation efficiency. In the experiment, installing various PV modules at the solar techno center located at north latitude 34.7deg and east longitude 137.6deg, measurement was made by I-V curve tracer, pyranometer, and thermocouple buried on the module back. As a result, the following were confirmed: As to the monthly mean power generation efficiency, the crystalline system is lowest in summer and highest in winter, and the amorphous system highest in summer and lowest in winter. Concerning the power generation efficiency and illuminance, the gap of power generation efficiency between at high illuminance and at low illuminance is large in the crystalline system and small in amorphous system. Relating to the azimuth angle of module installation and the generated output, the installation inclined 15deg angle west in summer and 15deg angle east in fall/winter generates more power in the crystalline system. On the contrary, the installation on the south face generates more power in the amorphous system. 4 refs., 8 figs., 3 tabs.

  12. Influence of He-ion irradiation on the characteristics of Pd/n-Si{sub 0.90}Ge{sub 0.10}/Si Schottky contacts

    Energy Technology Data Exchange (ETDEWEB)

    Mamor, M; Sellai, A; Bouziane, K; Harthi, S H Al; Busaidi, M Al; Gard, F S [Physics Department, Sultan Qaboos University, PO Box 36 Muscat 123, Sultanate of (Oman)

    2007-03-07

    Current-voltage (I-V) and capacitance-voltage (C-V) characteristics of He-ion irradiated Pd/n-Si{sub 09}Ge{sub 0.10} Schottky contacts have been measured in the temperature range from 100 to 300 K. Schottky barrier properties such as the Schottky barrier height ({phi}{sub bn}) and ideality factor (n) have been studied as a function of temperature. The degree to which their characteristics deviated from the ideal case increased as the temperature decreased. A decrease in {phi}{sub bn} and an increase in n with decreasing temperature are observed. Additionally, linear dependence between the so-called temperature factor T{sub 0} and temperature as well as between {phi}{sub bn} and n are shown. This type of strong temperature dependence indicates the presence of a large degree of lateral inhomogeneities of the barrier height, resulting from the He-ion irradiation induced defects and traps which produce a variation in the number of free carriers. The presence of electrically active defects introduced by He-ion irradiation at and below the Si{sub 0.90}Ge{sub 0.10} surface support this interpretation.

  13. Effects of thermal annealing on electrical characteristics of Cd/CdS/n-Si/Au-Sb sandwich structure

    International Nuclear Information System (INIS)

    Saglam, M.; Ates, A.; Guezeldir, B.; Astam, A.; Yildirim, M.A.

    2009-01-01

    In general, at the metal-semiconductor contacts, interfacial layers have been fabricated by different methods such as molecular beam epitaxy, metal organic chemical vapor deposition, sputtering and vacuum evaporation. However, all of these techniques have encountered various difficulties in the deposited films. Instead of these methods, since Successive Ionic Layer Adsorption and Reaction (SILAR) method is simple, fast, sensitive, and less costly to prepare interfacial layer, we have first employed this method in order to prepare Cd/CdS/n-Si/Au-Sb sandwich structure. For this reason, the CdS thin film has been directly formed on n-type Si substrate by means of SILAR method. The Cd/CdS/n-Si/Au-Sb sandwich structure has demonstrated clearly rectifying behaviour by the current-voltage (I-V) curves studied at room temperature. In order to observe the effect of the thermal annealing, this structure has been annealed at temperatures from 50 to 300 deg. C for 3 min in N 2 atmosphere. The characteristic parameters such as barrier height, ideality factor and series resistance of this structure have been calculated from the forward bias I-V characteristics as a function of annealing temperature with different methods. The values of n, Φ b and mean R s of the initial Cd/CdS/n-Si/Au-Sb sandwich structure were found to be 2.31, 0.790 eV and 1.86 kΩ respectively. After annealing at 300 deg. C, these values were changed to 1.89, 0.765 eV and 0.48 kΩ. It has been seen that the barrier height, ideality factor and series resistance have slightly changed with increasing annealing temperature up to 300 deg. C.

  14. Study of the Emission Characteristics of Single-Walled CNT and Carbon Nano-Fiber Pyrograf III

    Science.gov (United States)

    Mousa, Marwan S.; Al-Akhras, M.-Ali H.; Daradkeh, Samer

    2018-02-01

    Field emission microscopy measurements from Single-Walled Carbon Nanotubes (SWCNTs) and Carbon Nano-Fibers Pyrograf III PR-1 (CNF) were performed. Details of the materials employed in the experiments are as follows: (a) Carbon Nano-Fibers Pyrograf III PR-1 (CNF), having an average fiber diameter that is ranging between (100-200) nm with a length of (30-100) μm. (b) Single walled Carbon Nanotubes were produced by high-pressure CO over Fe particle (HiPCO: High-Pressure Carbon Monoxide process), having an average diameter ranging between (1-4) nm with a length of (1-3) μm. The experiments were performed under vacuum pressure value of (10-7 mbar). The research work reported here includes the field electron emission current-voltage (I-V) characteristics and presented as Fowler-Nordheim (FN) plots and the spatial emission current distributions (electron emission images) obtained and analyzed in terms of electron source features. For both the SWCNT and the CNF a single spot pattern for the electron spatial; distributions were observed.

  15. An Integrated Safety Assessment Methodology for Generation IV Nuclear Systems

    International Nuclear Information System (INIS)

    Leahy, Timothy J.

    2010-01-01

    The Generation IV International Forum (GIF) Risk and Safety Working Group (RSWG) was created to develop an effective approach for the safety of Generation IV advanced nuclear energy systems. Early work of the RSWG focused on defining a safety philosophy founded on lessons learned from current and prior generations of nuclear technologies, and on identifying technology characteristics that may help achieve Generation IV safety goals. More recent RSWG work has focused on the definition of an integrated safety assessment methodology for evaluating the safety of Generation IV systems. The methodology, tentatively called ISAM, is an integrated 'toolkit' consisting of analytical techniques that are available and matched to appropriate stages of Generation IV system concept development. The integrated methodology is intended to yield safety-related insights that help actively drive the evolving design throughout the technology development cycle, potentially resulting in enhanced safety, reduced costs, and shortened development time.

  16. Glycogen Storage Disease Type IV

    DEFF Research Database (Denmark)

    Bendroth-Asmussen, Lisa; Aksglaede, Lise; Gernow, Anne B

    2016-01-01

    molecular genetic analyses confirmed glycogen storage disease Type IV with the finding of compound heterozygosity for 2 mutations (c.691+2T>C and c.1570C>T, p.R524X) in the GBE1 gene. We conclude that glycogen storage disease Type IV can cause early miscarriage and that diagnosis can initially be made...

  17. Ehlers-Danlos syndrome type IV

    Directory of Open Access Journals (Sweden)

    Germain Dominique P

    2007-07-01

    Full Text Available Abstract Ehlers-Danlos syndrome type IV, the vascular type of Ehlers-Danlos syndromes (EDS, is an inherited connective tissue disorder defined by characteristic facial features (acrogeria in most patients, translucent skin with highly visible subcutaneous vessels on the trunk and lower back, easy bruising, and severe arterial, digestive and uterine complications, which are rarely, if at all, observed in the other forms of EDS. The estimated prevalence for all EDS varies between 1/10,000 and 1/25,000, EDS type IV representing approximately 5 to 10% of cases. The vascular complications may affect all anatomical areas, with a tendency toward arteries of large and medium diameter. Dissections of the vertebral arteries and the carotids in their extra- and intra-cranial segments (carotid-cavernous fistulae are typical. There is a high risk of recurrent colonic perforations. Pregnancy increases the likelihood of a uterine or vascular rupture. EDS type IV is inherited as an autosomal dominant trait that is caused by mutations in the COL3A1 gene coding for type III procollagen. Diagnosis is based on clinical signs, non-invasive imaging, and the identification of a mutation of the COL3A1 gene. In childhood, coagulation disorders and Silverman's syndrome are the main differential diagnoses; in adulthood, the differential diagnosis includes other Ehlers-Danlos syndromes, Marfan syndrome and Loeys-Dietz syndrome. Prenatal diagnosis can be considered in families where the mutation is known. Choriocentesis or amniocentesis, however, may entail risk for the pregnant woman. In the absence of specific treatment for EDS type IV, medical intervention should be focused on symptomatic treatment and prophylactic measures. Arterial, digestive or uterine complications require immediate hospitalisation, observation in an intensive care unit. Invasive imaging techniques are contraindicated. Conservative approach is usually recommended when caring for a vascular

  18. Ehlers-Danlos syndrome type IV

    Science.gov (United States)

    Germain, Dominique P

    2007-01-01

    Ehlers-Danlos syndrome type IV, the vascular type of Ehlers-Danlos syndromes (EDS), is an inherited connective tissue disorder defined by characteristic facial features (acrogeria) in most patients, translucent skin with highly visible subcutaneous vessels on the trunk and lower back, easy bruising, and severe arterial, digestive and uterine complications, which are rarely, if at all, observed in the other forms of EDS. The estimated prevalence for all EDS varies between 1/10,000 and 1/25,000, EDS type IV representing approximately 5 to 10% of cases. The vascular complications may affect all anatomical areas, with a tendency toward arteries of large and medium diameter. Dissections of the vertebral arteries and the carotids in their extra- and intra-cranial segments (carotid-cavernous fistulae) are typical. There is a high risk of recurrent colonic perforations. Pregnancy increases the likelihood of a uterine or vascular rupture. EDS type IV is inherited as an autosomal dominant trait that is caused by mutations in the COL3A1 gene coding for type III procollagen. Diagnosis is based on clinical signs, non-invasive imaging, and the identification of a mutation of the COL3A1 gene. In childhood, coagulation disorders and Silverman's syndrome are the main differential diagnoses; in adulthood, the differential diagnosis includes other Ehlers-Danlos syndromes, Marfan syndrome and Loeys-Dietz syndrome. Prenatal diagnosis can be considered in families where the mutation is known. Choriocentesis or amniocentesis, however, may entail risk for the pregnant woman. In the absence of specific treatment for EDS type IV, medical intervention should be focused on symptomatic treatment and prophylactic measures. Arterial, digestive or uterine complications require immediate hospitalisation, observation in an intensive care unit. Invasive imaging techniques are contraindicated. Conservative approach is usually recommended when caring for a vascular complication in a patient suffering

  19. About the structure and stability of complex carbonates of thorium (IV), cerium (IV), zirconium (IV), hafnium (IV)

    International Nuclear Information System (INIS)

    Dervin, Jacqueline

    1972-01-01

    This research thesis addressed the study of complex carbonates of cations of metals belonging to the IV A column, i.e. thorium (IV), zirconium (IV), hafnium (IV), and also cerium (IV) and uranium (VI), and more particularly focused on ionic compounds formed in solution, and also on the influence of concentration and nature of cations on stability and nature of the formed solid. The author first presents methods used in this study, discusses their precision and scope of validity. She reports the study of the formation of different complex ions which have been highlighted in solution, and the determination of their formation constants. She reports the preparation and study of the stability domain of solid complexes. The next part reports the use of thermogravimetric analysis, IR spectrometry, and crystallography for the structural study of these compounds

  20. The adsorption of 117Snm(IV)-EDTMP on collagen

    International Nuclear Information System (INIS)

    Yang Yuqing; Luo Shunzhong; Pu Manfei; Bing Wenzeng; He Jiaheng; Wang Guanquan

    2002-01-01

    The adsorption and desorption characteristics of 117 Sn m (IV)-EDTMP on collage are studied, and compared with that on HA. The results show that the effects of pH and temperature on adsorption of 117 Sn m (IV)-EDTMP on collagen are similar to those on HA, and that the adsorption equilibrium and adsorption model of 117 Sn m (IV)-EDTMP on collagen are completely different from those on HA; 117 Sm m -EDTMP absorbed on collagen are extremely stable and almost could not be desorbed with normal saline or EDTMP

  1. Two-stage precipitation of neptunium (IV) oxalate

    International Nuclear Information System (INIS)

    Luerkens, D.W.

    1983-07-01

    Neptunium (IV) oxalate was precipitated using a two-stage precipitation system. A series of precipitation experiments was used to identify the significant process variables affecting precipitate characteristics. Process variables tested were input concentrations, solubility conditions in the first stage precipitator, precipitation temperatures, and residence time in the first stage precipitator. A procedure has been demonstrated that produces neptunium (IV) oxalate particles that filter well and readily calcine to the oxide

  2. Effect of Surface Passivation on the Electrical Characteristics of Nanoscale AlGaN/GaN HEMT

    Science.gov (United States)

    Gupta, Akriti; Chatterjee, Neel; Kumar, Pradeep; Pandey, Sujata

    2017-08-01

    In this paper, we present the effect of passivation layer on the electrical characteristics of AlGaN/GaN HEMT. The energy band diagram, drain current voltage characteristics, transconductance and cut off frequency was calculated for both long channel and short channel devices. It was found that the electrical characteristics of the device improve with the introduction of high K dielectric in the passivation layer. The results obtained agree well with the data available in literature.

  3. Aircraft engines. IV

    Energy Technology Data Exchange (ETDEWEB)

    Ruffles, P C

    1989-01-01

    Configurational design and thermodynamic performance gain trends are projected into the next 50 years, in view of the growing interest of aircraft manufacturers in both larger and more efficient high-bypass turbofan engines for subsonic flight and variable cycle engines for supersonic flight. Ceramic- and metal-matrix composites are envisioned as the key to achievement of turbine inlet temperatures 300 C higher than the 1400 C which is characteristic of the state-of-the-art, with the requisite high stiffness, strength, and low density. Such fiber-reinforced materials can be readily tailored to furnish greatest strength in a specific direction of loading. Large, low-density engines are critical elements of future 1000-seat aircraft.

  4. Direct Bandgap Group IV Materials

    Science.gov (United States)

    2016-01-21

    AFRL-AFOSR-JP-TR-2017-0049 Direct Bandgap group IV Materials Hung Hsiang Cheng NATIONAL TAIWAN UNIVERSITY Final Report 01/21/2016 DISTRIBUTION A...NAME(S) AND ADDRESS(ES) NATIONAL TAIWAN UNIVERSITY 1 ROOSEVELT RD. SEC. 4 TAIPEI CITY, 10617 TW 8. PERFORMING ORGANIZATION REPORT NUMBER 9. SPONSORING...14. ABSTRACT Direct bandgap group IV materials have been long sought for in both academia and industry for the implementation of photonic devices

  5. Resistance Switching Memory Characteristics of Si/CaF2/CdF2 Quantum-Well Structures Grown on Metal (CoSi2) Layer

    Science.gov (United States)

    Denda, Junya; Uryu, Kazuya; Watanabe, Masahiro

    2013-04-01

    A novel scheme of resistance switching random access memory (ReRAM) devices fabricated using Si/CaF2/CdF2/CaF2/Si quantum-well structures grown on metal CoSi2 layer formed on a Si substrate has been proposed, and embryonic write/erase memory operation has been demonstrated at room temperature. It has been found that the oxide-mediated epitaxy (OME) technique for forming the CoSi2 layer on Si dramatically improves the stability and reproducibility of the current-voltage (I-V) curve. This technology involves 10-nm-thick Co layer deposition on a protective oxide prepared by boiling in a peroxide-based solution followed by annealing at 550 °C for 30 min for silicidation in ultrahigh vacuum. A switching voltage of lower than 1 V, a peak current density of 32 kA/cm2, and an ON/OFF ratio of 10 have been observed for the sample with the thickness sequence of 0.9/0.9/2.5/0.9/5.0 nm for the respective layers in the Si/CaF2/CdF2/CaF2/Si structure. Results of surface morphology analysis suggest that the grain size of crystal islands with flat surfaces strongly affects the quality of device characteristics.

  6. Study on the emission characteristics of cathodes in an ionized gas flow

    International Nuclear Information System (INIS)

    Maslennikov, N.M.

    1975-01-01

    Emission characteristics of molybdenum, tungsten and tantalum cathodes in a flow of argon and argon-potassium plasma with gas pressure of 0.04 atm, 1 atm and 0.25 atm were investigated. Gas was heated in a plasmatron. Measuring electrodes were arranged across the gas flow. Investigations in an argon plasma were carried out with the object of comparing of current-voltage dependences for potassium-activated and nonactivated cathodes. In all cases the current-voltage characteristics were growing. No saturation was observed of a current between accurent electrodes. The increase of a current between the cathodes due to the thermionic emission from the cathode began to effect at the cathode temperature of 2.470 K. The work function was found to be 5 to 5.2 ev. The comparison of the results obtained experimentally in the paper show a qualitative coincidence with calculations by some authors and a discrepancy with theoretical conceptions of other authors

  7. Photoelectric characteristics of diodes in prototype photosensitive pixels for a monolithic array infrared photodetector

    Energy Technology Data Exchange (ETDEWEB)

    Sorochkin, A. V., E-mail: alexandersm@mail.ru; Varavin, V. S.; Predein, A. V.; Sabinina, I. V.; Yakushev, M. V. [Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation)

    2012-04-15

    Test photodiodes in the form of mesa structures with different areas from 30 Multiplication-Sign 30 to 100 Multiplication-Sign 100 {mu}m in size are fabricated based on a Cd{sub x}Hg{sub 1-x}Te/Si structure at x = 0.235, grown by molecular-beam epitaxy (MBE). The current-voltage characteristics of the diodes are measured in the dark and under background light conditions. The experimental results are compared with theoretical calculations. It is found that the dependence of the photodiode photocurrent and dark current on the mesa structure size appears in the mesa size ranges from 30 Multiplication-Sign 30 to 80 Multiplication-Sign 80 {mu}m. The dark current decreases and the photocurrent increases with decreasing mesa size. The mechanisms affecting the behavior of current-voltage characteristics are discussed.

  8. Free-format RPG IV

    CERN Document Server

    Martin, Jim

    2013-01-01

    This how-to guide offers a concise and thorough introduction to the increased productivity, better readability, and easier program maintenance that comes with the free-format style of programming in RPG IV. Although free-format information is available in IBM manuals, it is not separated from everything else, thereby requiring hours of tedious research to track down the information needed. This book provides everything one needs to know to write RPG IV in the free-format style, and author Jim Martin not only teaches rules and syntax but also explains how this new style of coding has the pot

  9. Subharmonic gap structure in the characteristics of YBa2Cu3O7-x microbridges

    International Nuclear Information System (INIS)

    Pogrebnyakov, A.V.; Levinsen, M.T.; Sheng, Y.Q.; Freltoft, T.

    1996-01-01

    The subharmonic gap structures corresponding to large, 2Δ 1 =48 meV, and small, 2Δ 2 =10.3 meV, components of the energy gap were observed in the first derivatives of the current-voltage characteristics of YBa 2 Cu 3 O 7-x epitaxial thin film microbridges. The appearance of the subharmonic gap structures is attributed to Andreev reflection. (orig.)

  10. Investigation of thermometrical characteristics of p+–n-GaP diodes

    Directory of Open Access Journals (Sweden)

    Sypko N. I.

    2008-12-01

    Full Text Available The method of reception of p+–n-diode epitaxial structures of GaP from liquid phase is developed. In the temperature range of 80—520 K thermometric and current-voltage characteristics of test models of diode temperature sensors are measured and their basic technical parameters are determined. Perspectivity of developed GaP-diodes application as sensitive elements of high-temperature sensor is shown.

  11. 11. IV avati Draakoni galeriis...

    Index Scriptorium Estoniae

    2005-01-01

    Tanel Saare (sünd. 1979) näitus "Gott und huhn episode IV: seed shower". Eksponeeritakse väljavõtteid aktsioonidest aastatel 2000-2004 Turus, Nürnbergis, Berliinis, Lohusalus ja Soulis. Osa aktsioone toimus koos rühmitusega Non Grata

  12. Transient Analysis Needs for Generation IV Reactor Concepts

    International Nuclear Information System (INIS)

    Siefken, L.J.; Harvego, E.A.; Coryell, E.W.; Davis, C.B.

    2002-01-01

    The importance of nuclear energy as a vital and strategic resource in the U. S. and world's energy supply mix has led to an initiative, termed Generation IV by the U.S. Department of Energy (DOE), to develop and demonstrate new and improved reactor technologies. These new Generation IV reactor concepts are expected to be substantially improved over the current generation of reactors with respect to economics, safety, proliferation resistance and waste characteristics. Although a number of light water reactor concepts have been proposed as Generation IV candidates, the majority of proposed designs have fundamentally different characteristics than the current generation of commercial LWRs operating in the U.S. and other countries. This paper presents the results of a review of these new reactor technologies and defines the transient analyses required to support the evaluation and future development of the Generation IV concepts. The ultimate objective of this work is to identify and develop new capabilities needed by INEEL to support DOE's Generation IV initiative. In particular, the focus of this study is on needed extensions or enhancements to SCDAP/RELAP5/3D code. This code and the RELAP5-3D code from which it evolved are the primary analysis tools used by the INEEL and others for the analysis of design-basis and beyond-design-basis accidents in current generation light water reactors. (authors)

  13. ARIES-IV Nested Shell Blanket Design

    International Nuclear Information System (INIS)

    Wong, C.P.C.; Redler, K.; Reis, E.E.; Will, R.; Cheng, E.; Hasan, C.M.; Sharafat, S.

    1993-11-01

    The ARIES-IV Nested Shell Blanket (NSB) Design is an alternate blanket concept of the ARIES-IV low activation helium-cooled reactor design. The reference design has the coolant routed in the poloidal direction and the inlet and outlet plena are located at the top and bottom of the torus. The NSB design has the high velocity coolant routed in the toroidal direction and the plena are located behind the blanket. This is of significance since the selected structural material is SiC-composite. The NSB is designed to have key high performance components with characteristic dimensions of no larger than 2 m. These components can be brazed to form the blanket module. For the diverter design, we eliminated the use of W as the divertor coating material by relying on the successful development of the gaseous divertor concept. The neutronics and thermal-hydraulic performance of both blanket concepts are similar. The selected blanket and divertor configurations can also meet all the projected structural, neutronics and thermal-hydraulics design limits and requirements. With the selected blanket and divertor materials, the design has a level of safety assurance rate of I (LSA-1), which indicates an inherently safe design

  14. IV Characterisation for the VELO Upgrade

    CERN Multimedia

    Franco Lima, Vinicius

    2018-01-01

    LHCb is a dedicated heavy flavour physics experiment that operates at the LHC. The LHCb collaboration plans to change key features of the present detectors for Run III, moving to a full detector readout at 40MHz and operating at a luminosity of 1-2x1033cm-2s-1. The new Vertex Locator (VELO) detector will use hybrid pixel detectors composed of silicon sensors bump-bonded to new VeloPix CMOS readout chips designed for the new 40MHz readout rate. We will present a novel way of delivering bias through the ASIC backside in order to test IV characteristics of sensors in vacuum before module construction. The appropriate laboratory setups developed to test VELO hybrids for production will also be discussed.

  15. Uruguay; 2011 Article IV Consultation

    OpenAIRE

    International Monetary Fund

    2011-01-01

    This 2011 Article IV Consultation highlights that the growth momentum in Uruguay has continued into 2011 but a slowdown is under way, led by weaker exports and slower public investment. Uruguay’s economic and financial vulnerabilities are modest, and the government has reduced debt vulnerabilities significantly and built important financial buffers. Executive Directors have commended authorities’ skillful macroeconomic management that has underpinned Uruguay’s excellent economic performance, ...

  16. Austria; 2013 Article IV Consultation

    OpenAIRE

    International Monetary Fund

    2013-01-01

    This paper presents details of Austria’s 2013 Article IV Consultation. Austria has been growing economically but is facing challenges in the financial sector. Full implementation of medium-term fiscal adjustment plans require specifying several measures and plans that need gradual strengthening to take expected further bank restructuring cost into account. It suggests that strong early bank intervention and resolution tools, a better designed deposit insurance system, and a bank-financed reso...

  17. Photoelectric characteristics of CH3NH3PbI3/p-Si heterojunction

    Science.gov (United States)

    Yamei, Wu; Ruixia, Yang; Hanmin, Tian; Shuai, Chen

    2016-05-01

    Organic-inorganic hybrid perovskite CH3NH3PbI3 film is prepared on p-type silicon substrate using the one-step solution method to form a CH3NH3PbI3/p-Si heterojunction. The film morphology and structure are characterized by atomic force microscopy (AFM) and scanning electron microscopy (SEM). The photoelectric properties of the CH3NH3PbI3/p-Si heterojunction are studied by testing the current-voltage (I-V) with and without illumination and capacitance-voltage (C-V) characteristics. It turns out from the I-V curve without illumination that the CH3NH3PbI3/p-Si heterojunction has a rectifier feature with the rectification ratio over 70 at the bias of ±5 V. Also, there appears a photoelectric conversion phenomenon on this heterojunction with a short circuit current (Isc) of 0.16 μA and an open circuit voltage (Voc) of about 10 mV The high frequency C-V characteristic of the Ag/CH3NH3PbI3/p-Si heterojunction turns out to be similar to that of the metal-insulator-semiconductor (MIS) structure, and a parallel translation of the C-V curve along the forward voltage axis is found. This parallel translation means the existence of defects at the CH3NH3PbI3/p-Si interface and positive fixed charges in the CH3NH3PbI3 layer. The defects at the interface of the CH3NH3PbI3/p-Si heterojunction result in the dramatic decline of the Voc. Besides, the C-V test of CH3NH3PbI3 film shows a non-linear dielectric property and the dielectric value is about 4.64 as calculated. Project supported by the Hebei Province Natural Science Foundation of China (No. F2014202184) and the Tianjin Natural Science Foundation of China (No. 15JCZDJC37800).

  18. Corrosion Effects on the I-V Characteristics of Electrically ...

    African Journals Online (AJOL)

    Experimental analysis on the effects of atmospheric Pollution and environmental degradation on the electrical properties of un-protected high tension cables, using copper and Aluminum wires of various diameters as case study, has been advanced. The analysis of the various data obtained in the course of the experiment, ...

  19. Enhancement of the electrical characteristics of MOS capacitors by reducing the organic content of H2O-diluted Spin-On-Glass based oxides

    International Nuclear Information System (INIS)

    Molina, Joel; Munoz, Ana; Torres, Alfonso; Landa, Mauro; Alarcon, Pablo; Escobar, Manuel

    2011-01-01

    In this work, the physical, chemical and electrical properties of Metal-Oxide-Semiconductor (MOS) capacitors with Spin-On-Glass (SOG)-based thin films as gate dielectric have been investigated. Experiments of SOG diluted with two different solvents (2-propanol and deionized water) were done in order to reduce the viscosity of the SOG solution so that thinner films (down to ∼20 nm) could be obtained and their general characteristics compared. Thin films of SOG were deposited on silicon by the sol-gel technique and they were thermally annealed using conventional oxidation furnace and Rapid Thermal Processing (RTP) systems within N 2 ambient after deposition. SOG dilution using non-organic solvents like deionized water and further annealing (at relatively high temperatures ≥450 deg. C) are important processes intended to reduce the organic content of the films. Fourier-Transform Infrared (FTIR) Spectroscopy results have shown that water-diluted SOG films have a significant reduction in their organic content after increasing annealing temperature and/or dilution percentage when compared to those of undiluted SOG films. Both current-voltage (I-V) and capacitance-voltage (C-V) measurements show better electrical characteristics for SOG-films diluted in deionized water compared to those diluted in 2-propanol (which is an organic solvent). The electrical characteristics of H 2 O-diluted SOG thin films are very similar to those obtained from high quality thermal oxides so that their application as gate dielectrics in MOS devices is promising. Finally, it has been demonstrated that by reducing the organic content of SOG-based thin films, it is possible to obtain MOS devices with better electrical properties.

  20. Kinetics of a redox reaction in the system Ce(IV) β-diketonate - additional ligand

    International Nuclear Information System (INIS)

    Anufrieva, S.I.; Snezhko, N.I.; Pechurova, N.I.; Martynenko, L.N.; Spitsyn, V.I.

    1982-01-01

    Preparation of solutions containing stable compounds of Ce(IV) with organic ligands is difficult, because even strong Ce(IV) complexes undergo intramolecular reduction and have a tendency to hydrolysis. It is known that Ce(IV) β-diketonates have different resistances to reduction inorganic solvents, depending on the structure. Using spectrophotometric analysis we have investigated the oxidation-reduction characteristics of solutions of certain Ce(IV) β-diketonates in benzene in the absence and presence of neutral ligands containing donor O or N atoms

  1. PREPARATION OF OXOPORPHINATOMANGANESE (IV) COMPLEX

    Energy Technology Data Exchange (ETDEWEB)

    Willner, I.; Otvos, J.; Calvin, M.

    1980-07-01

    Oxo-manganese-tetraphenylporphyrin (O=Mn{sup IV}-TPP) has been prepared by an oxygen-transfer reaction from iodosylbenzene to MnIITPP and characterized by its i.r. and field desorption mass spectra, which are identical to those of the product obtained by direct oxidation of Mn{sup III}(TPP) in an aqueous medium; it transfers oxygen to triphenylphosphine to produce triphenylphosphine oxide, and it is suggested that similar intermediates are important in oxygen activation by cytochrome P-450 as well as in the photosynthetic evolution of oxygen.

  2. Temperature-Dependent Electrical Characteristics of Au/Si3N4/4H n-SiC MIS Diode

    Science.gov (United States)

    Yigiterol, F.; Güllü, H. H.; Bayraklı, Ö.; Yıldız, D. E.

    2018-03-01

    Electrical characteristics of the Au/Si3N4/4H n-SiC metal-insulator-semiconductor (MIS) diode were investigated under the temperature, T , interval of 160-400 K using current-voltage (I-V), capacitance-voltage ( C {-} V ) and conductance-voltage ( G/ω {-} V ) measurements. Firstly, the Schottky diode parameters as zero-bias barrier height ( Φ_{B0} ) and ideality factor ( n ) were calculated according to the thermionic emission (TE) from forward bias I-V analysis in the whole working T . Experimental results showed that the values of Φ_{B0} were in increasing behavior with increasing T while n values decreased with inverse proportionality in n versus Φ_{{{{B}}0}} plot. Therefore, the non-ideal I-V behavior with inhomogeneous barrier height (BH) formation has been discussed under the assumption of Gaussian distribution (GD). From the GD of BHs, the mean BH was found to be about 1.40 eV with 0.1697 standard deviation and the modified Richardson constant A^{*} of this diode was obtained as 141.65 A/cm2 K2 in good agreement with the literature (the theoretical value of A^{*} is 137.21 A/cm2 K2). The relationship between Φ_{B0} and n showed an abnormal I-V behavior depending on T , and it was modeled by TE theory with GD of BH due to the effect in inhomogeneous BH at the interface. Secondly, according to Cheung's model, series resistance, R_{{S}} values were calculated in the T range of 160-400 K and these values were found to decrease with increasing T . Finally, the density of interface states, D_{{it}} was calculated and the T dependence of energy distribution of D_{{it}} profiles determined the forward I {-} V measurements by taking into account the bias dependence of the effective BH, Φ_{{e}} and n . D_{{it}} were also calculated according to the Hill-Coleman method from C {-} V and G/ω {-} V analysis. Furthermore, the variation of D_{{it}} as a function of frequency, f and T were determined.

  3. Test Review: Advanced Clinical Solutions for WAIS-IV and WMS-IV

    Science.gov (United States)

    Chu, Yiting; Lai, Mark H. C.; Xu, Yining; Zhou, Yuanyuan

    2012-01-01

    The authors review the "Advanced Clinical Solutions for WAIS-IV and WMS-IV". The "Advanced Clinical Solutions (ACS) for the Wechsler Adult Intelligence Scale-Fourth Edition" (WAIS-IV; Wechsler, 2008) and the "Wechsler Memory Scale-Fourth Edition" (WMS-IV; Wechsler, 2009) was published by Pearson in 2009. It is a…

  4. A kinetic Monte Carlo model with improved charge injection model for the photocurrent characteristics of organic solar cells

    Science.gov (United States)

    Kipp, Dylan; Ganesan, Venkat

    2013-06-01

    We develop a kinetic Monte Carlo model for photocurrent generation in organic solar cells that demonstrates improved agreement with experimental illuminated and dark current-voltage curves. In our model, we introduce a charge injection rate prefactor to correct for the electrode grid-size and electrode charge density biases apparent in the coarse-grained approximation of the electrode as a grid of single occupancy, charge-injecting reservoirs. We use the charge injection rate prefactor to control the portion of dark current attributed to each of four kinds of charge injection. By shifting the dark current between electrode-polymer pairs, we align the injection timescales and expand the applicability of the method to accommodate ohmic energy barriers. We consider the device characteristics of the ITO/PEDOT/PSS:PPDI:PBTT:Al system and demonstrate the manner in which our model captures the device charge densities unique to systems with small injection energy barriers. To elucidate the defining characteristics of our model, we first demonstrate the manner in which charge accumulation and band bending affect the shape and placement of the various current-voltage regimes. We then discuss the influence of various model parameters upon the current-voltage characteristics.

  5. The Elegy in the Aeneid Book IV

    Directory of Open Access Journals (Sweden)

    Paulo Martins

    2017-12-01

    Full Text Available In Aeneid’s book IV, Virgil makes use of elegiac topics while narrating Dido and Aeneas’ ill-fated love, inserting these topics into the epic genre. Some key characteristics of elegiac lover, such as the furor by which he is taken when injured by Cupid’s dart; lover’s idleness; the mala fama that emerges from the love affair; and, lastly, the misera condition in which the lover is thrown to, always followed by a lament; all these has shown to be present in Aeneid’s book IV. So, in addition to evincing how epic genre, without losing its formal rigour, subsume other genres, in this case the elegiac one, this article observes how this procedure takes part in both Vergil’s intra-narrative and extra-narrative purpose when composing Aeneid. In the first case, if we bear in mind that books I to VI are concerned with the construction of Aeneas’ heroic ἦθος, the hero’s denial in staying together with the queen confirms, once again, his destiny, which is Rome’s foundation, that is conventionally of an epic hero – and not of an elegiac lover. As for the second one, it is first important to be aware of Vergil’s aim when composing Aeneid, which is to insert Rome’s history into a myth, which is the elegiac poem itself. Therefore, Dido’s abandonment and her following imprecation in verses 590-640 are used by the poet to justify, even if ironically, Carthaginians’ rivalry and violence against Romans throughout the Punic Wars, putting them as the result of a woman’s love frustration.

  6. The dependence of C IV broad absorption line properties on accompanying Si IV and Al III absorption: relating quasar-wind ionization levels, kinematics, and column densities

    Energy Technology Data Exchange (ETDEWEB)

    Filiz Ak, N.; Brandt, W. N.; Schneider, D. P.; Trump, J. R. [Department of Astronomy and Astrophysics, Pennsylvania State University, University Park, PA 16802 (United States); Hall, P. B. [Department of Physics and Astronomy, York University, 4700 Keele Street, Toronto, Ontario M3J 1P3 (Canada); Anderson, S. F. [Astronomy Department, University of Washington, Seattle, WA 98195 (United States); Hamann, F. [Department of Astronomy, University of Florida, Gainesville, FL 32611-2055 (United States); Myers, Adam D. [Department of Physics and Astronomy, University of Wyoming, Laramie, WY 82071 (United States); Pâris, I. [Departamento de Astronomía, Universidad de Chile, Casilla 36-D, Santiago (Chile); Petitjean, P. [Institut d' Astrophysique de Paris, Universite Paris 6, F-75014 Paris (France); Ross, Nicholas P. [Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, CA 94720 (United States); Shen, Yue [Carnegie Observatories, 813 Santa Barbara Street, Pasadena, CA 91101 (United States); York, Don, E-mail: nfilizak@astro.psu.edu [Department of Astronomy and Astrophysics, The University of Chicago, Chicago, IL 60637 (United States)

    2014-08-20

    We consider how the profile and multi-year variability properties of a large sample of C IV Broad Absorption Line (BAL) troughs change when BALs from Si IV and/or Al III are present at corresponding velocities, indicating that the line of sight intercepts at least some lower ionization gas. We derive a number of observational results for C IV BALs separated according to the presence or absence of accompanying lower ionization transitions, including measurements of composite profile shapes, equivalent width (EW), characteristic velocities, composite variation profiles, and EW variability. We also measure the correlations between EW and fractional-EW variability for C IV, Si IV, and Al III. Our measurements reveal the basic correlated changes between ionization level, kinematics, and column density expected in accretion-disk wind models; e.g., lines of sight including lower ionization material generally show deeper and broader C IV troughs that have smaller minimum velocities and that are less variable. Many C IV BALs with no accompanying Si IV or Al III BALs may have only mild or no saturation.

  7. Some oxozirconium(IV) compounds

    Energy Technology Data Exchange (ETDEWEB)

    Paul, R C; Gupta, S K; Parmar, S S; Vasisht, S K [Punjab Univ., Chandigarh (India). Dept. of Chemistry

    1976-01-01

    Some new oxozirconium(IV) complexes, ZrO(An)/sub 2/, ZrO(Gly)/sub 2/, ZrO(HSal)/sub 2/, ZrO(HPth)/sub 2/, ZrO(Pic)/sub 2/(HPic)/sub 2/, and ZrO(Quin)/sub 2/(HQuin)/sub 2/ have been isolated from the reactions of ZrO(CH/sub 3/COO)/sub 2/CH/sub 3/COOH with anthranilic acid (HAn), glycine (HGly), salicylic acid (H/sub 2/Sal), phthalic acid (H/sub 2/Pth), picolinic acid (HPic), and 8-quinolinol (HQuin) respectively. Their important infrared bands and wherever possible molar conductance and molecular weight have been reported.

  8. Shunt resistance and saturation current determination in CdTe and CIGS solar cells. Part 2: application to experimental IV measurements and comparison with other methods

    Science.gov (United States)

    Rangel-Kuoppa, Victor-Tapio; Albor-Aguilera, María-de-Lourdes; Hérnandez-Vásquez, César; Flores-Márquez, José-Manuel; Jiménez-Olarte, Daniel; Sastré-Hernández, Jorge; González-Trujillo, Miguel-Ángel; Contreras-Puente, Gerardo-Silverio

    2018-04-01

    In this Part 2 of this series of articles, the procedure proposed in Part 1, namely a new parameter extraction technique of the shunt resistance (R sh ) and saturation current (I sat ) of a current-voltage (I-V) measurement of a solar cell, within the one-diode model, is applied to CdS-CdTe and CIGS-CdS solar cells. First, the Cheung method is used to obtain the series resistance (R s ) and the ideality factor n. Afterwards, procedures A and B proposed in Part 1 are used to obtain R sh and I sat . The procedure is compared with two other commonly used procedures. Better accuracy on the simulated I-V curves used with the parameters extracted by our method is obtained. Also, the integral percentage errors from the simulated I-V curves using the method proposed in this study are one order of magnitude smaller compared with the integral percentage errors using the other two methods.

  9. Vortex instability and hysteresis effects in I-V curves of superconducting Y1Ba2Cu3O7-δ

    International Nuclear Information System (INIS)

    Kilic, A.; Kilic, K.; Cetin, O.

    2003-01-01

    We have investigated the effect of the current sweep rate (CSR) on the vortex dynamics in superconducting bulk sample of Y 1 Ba 2 Cu 3 O 7-δ . It has been found that the CSR has several dramatic effects on the vortex motion by giving rise enhancement in dissipation as decreasing the CSR, significant time effects, and instabilities in current-voltage (I-V) curves. The hysteresis loops concerning the I-V curves in both the current-increase and -decrease branches of the forward current region, and also the branches of the reversed current region have been observed together with a gradual diminutive of the hysteresis effects with decreasing the CSR. Due to the field and temperature domain considered, it is also observed that the moving state becomes unstable giving rise some instabilities such as small jumps and steps for both low and moderate current values as a function of CSR. Those anomalies have been discussed in terms of the depinning-pinning correlated to the plastic flow regime together with the disorder in the coupling strength between the superconducting grains, and compared qualitatively to the numerical computer simulations. In addition, for a given field and temperature domain, it has been shown that the CSR together with a relevant current scale is of importance in evolution of the I-V curves and is a useful tool in investigating the details of the vortex dynamics

  10. Genetics Home Reference: glycogen storage disease type IV

    Science.gov (United States)

    ... Home Health Conditions Glycogen storage disease type IV Glycogen storage disease type IV Printable PDF Open All ... Javascript to view the expand/collapse boxes. Description Glycogen storage disease type IV (GSD IV) is an ...

  11. A cerium(IV)-carbon multiple bond

    Energy Technology Data Exchange (ETDEWEB)

    Gregson, Matthew; Lu, Erli; McMaster, Jonathan; Lewis, William; Blake, Alexander J.; Liddle, Stephen T. [Nottingham Univ. (United Kingdom). School of Chemistry

    2013-12-02

    Straightforward access to a cerium(IV)-carbene complex was provided by one-electron oxidation of an anionic ''ate'' cerium(III)-carbene precursor, thereby avoiding decomposition reactions that plague oxidations of neutral cerium(III) compounds. The cerium(IV)-carbene complex is the first lanthanide(IV)-element multiple bond and involves a twofold bonding interaction of two electron pairs between cerium and carbon. [German] Auf direktem Wege zu einem Cer(IV)-Carbenkomplex gelangt man durch die Einelektronenoxidation einer anionischen Carben-Cerat(III)-Vorstufe. So werden Zersetzungsprozesse vermieden, die die Oxidation neutraler Cer(III)-Verbindungen erschweren. Der Cer(IV)-Carbenkomplex enthaelt die erste Lanthanoid(IV)-Element-Mehrfachbindung; dabei binden Cer und Kohlenstoff ueber zwei Elektronenpaare.

  12. iväkoti Riemula

    OpenAIRE

    Alanko, Reetta; Ihanamäki, Katja

    2012-01-01

    Opinnäytetyössä kuvataan yleisesti päivähoidon kehitystä Suomessa sekä päivähoitoa yrittäjän näkökulmasta, tuoden esille sen tämän päivän haasteet ja mahdollisuudet. Työssä on pohdittu yhteistyön merkitystä kunnan kanssa ja sitä, miten kunta voi osaltaan joko rajoittaa tai edesauttaa yksityisen päivähoitoyrityksen toimintaa. Opinnäytetyössä kerrotaan teoriassa Päiväkoti Riemula nimisen, erityispäivähoitopalveluita tarjoavan yrityksen perustamiseen liittyvistä suunnitelmista. Suunnitelluss...

  13. Effect of growth temperature on photoluminescence and piezoelectric characteristics of ZnO nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Water, Walter [Institute of Electro-Optical and Materials Science, National Formosa University, Yunlin 632, Taiwan (China); Fang, T.-H. [Institute of Electro-Optical and Materials Science, National Formosa University, Yunlin 632, Taiwan (China); Institute of Mechanical and Electromechanical Engineering, National Formosa University, Yunlin 632, Taiwan (China)], E-mail: fang.tehua@msa.hinet.net; Ji, L.-W.; Lee, C.-C. [Institute of Electro-Optical and Materials Science, National Formosa University, Yunlin 632, Taiwan (China)

    2009-02-25

    ZnO nanowire arrays were synthesized on Au-coated silicon (1 0 0) substrates by using vapour-liquid-solid process in this work. The effect of growth temperatures on the crystal structure and the surface morphology of ZnO nanowires were investigated by X-ray diffraction and scanning electron microscope. The absorption and optical characteristics of the nanowires were examined by Ultraviolet/Visible spectroscopy, and photoluminescence, respectively. The photoluminescence results exhibited ZnO nanowires had an ultraviolet and blue emission at 383 and 492 nm. Then a nanogenerator with ZnO nanowire arrays was fabricated and demonstrated Schottky-like current-voltage characteristics.

  14. Diffusion of Ni, Ga, and As in the surface layer of GaAs and characteristics of the Ni/GaAs contact

    International Nuclear Information System (INIS)

    Uskov, V.A.; Fedotov, A.B.; Erofeeva, E.A.; Rodionov, A.I.; Dzhumakulov, D.T.

    1987-01-01

    The authors investigate the low-temperature codiffusion of Ni, Ga, and As in the surface layer of gallium arsenide and study its effect on the current-voltage characteristics of a Ni/GaAs rectifier contact. The concentration distribution of atoms in the function layer of a Ni-GaAs system was investigated by the methods of layerwise radiometric and neutron-activation analyses. It was found that interdiffusion of components takes place in the Ni-GaAs system in an elastic stress field, generated by the differences in the lattice parameters and thermal-expansion coefficients of Ni, GaAs, and the intermetallic compound which form. The form and parameters of the current-voltage characteristics of a Ni/GaAs contact are determined by the phase composition and the structure of the junction layer

  15. Generation IV international forum 2002 - remarks

    International Nuclear Information System (INIS)

    Abraham, S.

    2002-01-01

    Analyses and forecasts underscore the important role of nuclear power in energy supply in the 21st century. Important aspects in this respect are the conservation of fossil resources, the protection of the world's climate, and the continuity of supply. Present 1st and 2nd generation nuclear power plants ensure an economical and technically mature electricity supply. Advanced systems offering, e.g., higher efficiency of fuel utilization, simplified systems technology, and advanced safety characteristics, can make available additional benefits in using nuclear power. Upon an initiative of the U.S. Department of Energy (DOE), ten countries combine their efforts in developing such reactor concepts in the Generation IV International Forum (GIF). Argentina, Brazil, Canada, France, Japan, South Africa, South Korea, Switzerland, the United Kingdom, and the United States pursue the common objective in GIF to identify suitable nuclear power systems and promote their development up to the envisaged readiness for construction in 2030. Besides technical and economic questions of nuclear power generation, also other aspects must be considered with a view to the future use of nuclear power. The particularly relevant issues, such as the management of radioactive waste, the intensification of research and development, and international cooperation, have been taken up by the Bush administration at an early point in time and have been, or will be, incorporated in practical solutions, as in the case of the Yucca Mountain repository project. (orig.)

  16. Extended analysis of Cu IV

    International Nuclear Information System (INIS)

    Meinders, E.; Uijlings, P.

    1980-01-01

    Wavelength data and classifications of 974 Cu IV lines in the region 750-1275 Angstroem are presented. Most of the lines have been classified as transitions from the previously unknown high even configurations 3d 7 5s and 3d 7 4d to 3d 7 4p. The configuration 3d 7 4d is seriously perturbed by 3d 6 4s 2 . The analysis resulted in the identification of 27 levels of 3d 7 5s and 113 levels of (3d 7 4d + 3d 6 4s 2 ) which are reported. The earlier published levels of 3d 7 4s and 3d 7 4p have to be shifted downward as a consequence of improved wavelength data. Radial paramter values, resulting from least-squares fits, are compared to Hartree-Fock values. The eigenvectors obtained in the parametric fitting are used to calculate transition probabilities in intermediate coupling. The relation between the observed intensities of the transitions 3d 7 4d-3d 7 4p and 3d 7 Ss-3d 7 4p is compared to the relation between theoretical values of the transition integrals obtained from Hartree-Fock calculations. A spectroscopic value for the ionization potentials is calculated from the 3d 7 ns configurations. (orig.)

  17. Studies of binary cerium(IV)-praseodymium(IV) and cerium(IV)-terbium(IV) oxides as pigments for ceramic applications

    International Nuclear Information System (INIS)

    Furtado, L.M.L.

    1991-01-01

    It was investigated a series of pigments of general composition Ce 1-x Pr x O 2 , and Ce x Tb y O 2 , exhibiting radish and brown colors, respectively, and high temperature stability. The pigments were obtained by dissolving appropriate amounts of the pure lanthanide oxides in acids and precipitating the rare earths as mixed oxalates, which were isolated and calcined under air, at 1000 0 C. X-Ray powder diffractograms were consistent with a cubic structure for the pigments. Magnetic susceptibility measurements, using Gouy method, indicated the presence of Pr(IV) ions in the Ce 1-x Pr x O 2 pigments and of Terbium predominantly as Tb(III) ions in the Ce-tb mixed oxides. A new method, based on suspension of solid samples in PVA-STB gels (STB = sodium tetradecaborate), was employed for the measurements of the electronic spectra of the pigments. The thermal behaviour the pigments was investigated by the calcination of the oxalates in the temperature range of 500 to 1200 O C, from 10 to 60 minutes. (author)

  18. Zirconium (IV) complexes with some polymethylenediimines | Na ...

    African Journals Online (AJOL)

    The syntheses of zirconium (IV) complexes have been carried out by the reaction of oxozirconium (IV) chloride with the appropriate diimines (Schiff bases). The complexes were isolated as yellow solids which are stable to heat. The complexes were found to be insoluble in most solvents. The infrared spectra, elemental ...

  19. Astragaloside IV liposomes ameliorates adriamycin-induced ...

    African Journals Online (AJOL)

    Methods: The rats were given a single tail intravenous injection of adriamycin (6 mg/kg) within 1 week, and then divided into four groups including normal, model, benazepril and astragaloside IV liposomes group. They were all orally administered dosage of benazepril and astragaloside IV liposomes once daily for 8 weeks.

  20. Generation IV reactors: international projects

    International Nuclear Information System (INIS)

    Carre, F.; Fiorini, G.L.; Kupitz, J.; Depisch, F.; Hittner, D.

    2003-01-01

    Generation IV international forum (GIF) was initiated in 2000 by DOE (American department of energy) in order to promote nuclear energy in a long term view (2030). GIF has selected 6 concepts of reactors: 1) VHTR (very high temperature reactor system, 2) GHR (gas-cooled fast reactor system), 3) SFR (sodium-cooled fast reactor system, 4) SCWR (super-critical water-cooled reactor system), 5) LFR (lead-cooled fast reactor system), and 6) MFR (molten-salt reactor system). All these 6 reactor systems have been selected on criteria based on: - a better contribution to sustainable development (through their aptitude to produce hydrogen or other clean fuels, or to have a high energy conversion ratio...) - economic profitability, - safety and reliability, and - proliferation resistance. The 6 concepts of reactors are examined in the first article, the second article presents an overview of the results of the international project on innovative nuclear reactors and fuel cycles (INPRO) within IAEA. The project finished its first phase, called phase-IA. It has produced an outlook into the future role of nuclear energy and defined the need for innovation. The third article is dedicated to 2 international cooperations: MICANET and HTR-TN. The purpose of MICANET is to propose to the European Commission a research and development strategy in order to develop the assets of nuclear energy for the future. Future reactors are expected to be more multiple-purposes, more adaptable, safer than today, all these developments require funded and coordinated research programs. The aim of HTR-TN cooperation is to promote high temperature reactor systems, to develop them in a long term perspective and to define their limits in terms of burn-up and operating temperature. (A.C.)

  1. Thermodynamic data for predicting concentrations of Th(IV), U(IV), Np(IV), and Pu(IV) in geologic environments

    Energy Technology Data Exchange (ETDEWEB)

    Rai, Dhanpat; Roa, Linfeng; Weger, H.T.; Felmy, A.R. [Battelle, Pacific Northwest National Laboratory (PNNL) (United States); Choppin, G.R. [Florida State University (United States); Yui, Mikazu [Waste Isolation Research Division, Tokai Works, Japan Nuclear Cycle Development Inst., Tokai, Ibaraki (Japan)

    1999-01-01

    This report provides thermodynamic data for predicting concentrations of Th(IV), U(IV), Np(IV), and Pu(IV) in geologic environments, and contributes to an integration of the JNC chemical thermodynamic database, JNC-TDB (previously PNC-TDB), for the performance analysis of geological isolation system for high-level radioactive wastes. Thermodynamic data for the formation of complexes or compounds with hydroxide, chloride, fluoride, carbonate, nitrate, sulfate and phosphate are discussed in this report. Where data for specific actinide(IV) species was lacking, the data were selected based on chemical analogy to other tetravalent actinides. In this study, the Pitzer ion-interaction model is used to extrapolate thermodynamic constants to zero ionic strength at 25degC. (author)

  2. Materials for generation-IV nuclear reactors

    International Nuclear Information System (INIS)

    Alvarez, M. G.

    2009-01-01

    Materials science and materials development are key issues for the implementation of innovative reactor systems such as those defined in the framework of the Generation IV. Six systems have been selected for Generation IV consideration: gas-cooled fast reactor, lead-cooled fast reactor, molten salt-cooled reactor, sodium-cooled fast reactor, supercritical water-cooled reactor, and very high temperature reactor. The structural materials need to resist much higher temperatures, higher neutron doses and extremely corrosive environment, which are beyond the experience of the current nuclear power plants. For this reason, the first consideration in the development of Generation-IV concepts is selection and deployment of materials that operate successfully in the aggressive operating environments expected in the Gen-IV concepts. This paper summarizes the Gen-IV operating environments and describes the various candidate materials under consideration for use in different structural applications. (author)

  3. Growth and Characteristic of Amorphous Nano-Granular TeO2-V2O5-NiO Thin Films

    Science.gov (United States)

    Hosseinzadeh, Sh.; Rahmati, A.; Bidadi, H.

    2016-12-01

    TeO2-V2O5-NiO thin films were deposited using thermal evaporation from 40TeO2-(60-y)V2O5-yNiO (y=0-30mol%) target. Structural analysis of the films was identified by X-ray diffractometry (XRD) and scanning electron microscopy (SEM). The amorphous TeO2-V2O5-NiO films have nanosized clear grain structure and sharp grain boundaries. DC conductivity and current-voltage (I-V) characteristic of TeO2-V2O5-NiO thin films were measured in the temperature range of 300-423K. As nickel oxide (NiO) content increases, the DC conductivity decreases up to two orders in value (10-9-10-11Sṡcm-1). Temperature dependence of conductivity is described using the small polaron hopping (SPH) model as well. Poole-Frenkel effect is observed at high external electric field. The optical absorption spectra of the TeO2-V2O5-NiO thin films were recorded in the wavelength range of 380-1100nm. The absorption coefficient revealed bandgap shrinkage (3.01-2.3eV) and band tail widening, due to an increase in NiO content. Energy dispersive X-ray spectroscopy (EDX) was used to determine elemental composition. In TeO2-V2O5-NiO thin films, the NiO content is around fifth of the initial target.

  4. Adduct formation in Ce(IV) thenolytrifluoroacetonate

    International Nuclear Information System (INIS)

    Anufrieva, S.I.; Polyakova, G.V.; Snezhko, N.I.; Pechurova, N.I.; Martynenko, L.I.; Spitsyn, V.I.

    1982-01-01

    The literature contains no information on adduct formation in Ce(IV) β-diketonates with additional ligands. Since tetrakis-β-diketonates of Ce(IV) have four six-membered chelate rings, we can suppose that the introduction of an additional monodentate or bidentate ligand into the coordination sphere of Ce(IV) β-diketonates would lead to an increase in the coordination number (CN) of the Ce(IV) to nine or ten. The possibility of realization of such a high CN for Ce(IV) has not been proved; a study of adduct formation by Ce(IV) tetrakis-β-diketonates is thus of theoretical interest. Such an investigation might also be of practical interest, because the introduction of an additional ligand into the coordination sphere of a rare-earth β-diketonate usually increases the solubility of the β-diketonate in nonpolar solvents and increases the volatility of the compound; such a modification of the properties is important for various practical purposes. The aim of our work was to study the possibility of separating solid adducts of Ce(IV) tetrakis-thenoyltrifluoroacetonate with certain oxygen-containing and nitrogen-containing donor monodentate and bidentate ligands, and also to investigate their properties. As the β-diketone we used thenoyltrifluoroacetone (HTTFA), since in a parallel investigation it was found that Ce(TTFA) 4 has a high oxidation-reduction stability

  5. Market opportunities: U.S. - PADD IV

    International Nuclear Information System (INIS)

    Garner, R.P.

    1997-01-01

    The current supply and demand balance, the short and long term expectations and marketing opportunities for Canadian crude oil in PADD IV, the Rocky Mountain region in the US, were reviewed. It was suggested that market opportunities in PADD IV are derived from the following four factors: (1) crude oil declines within that area, (2) federal regulations, (3) competitive presence with markets, and (4) population growth. The overall conclusion was that Canadian producers and PADD IV refiners will be looking at an ever-growing relationship based on freight equalized world crude prices. 8 tabs., 5 figs

  6. Diorganotin(IV) Complexes with Methionine Methyl Ester. Equilibria ...

    African Journals Online (AJOL)

    IV) (DBT) and diphenyltin(IV) (DPT) was investigated at 25 °C and 0.1 mol dm–3 ionic strength in water for dimethyltin(IV) and in 50 % dioxane–water mixture for dibutyltin(IV) and diphenyltin(IV). Methionine methyl ester forms1:1 and 1:2 ...

  7. Periodontal Disease Part IV: Periodontal Infections

    OpenAIRE

    Turnbull, Robert S.

    1988-01-01

    In Part IV of this article, the author describes two periodontal infections, acute necrotizing ulcerative gingivitis (trench mouth) and periodontal abscess, both acute painful conditions for which patients may seek advice from their family physician rather than their dentist.

  8. Safety assessment for Generation IV nuclear systems

    International Nuclear Information System (INIS)

    Leahy, T.J.

    2012-01-01

    The Generation IV International Forum (GIF) Risk and Safety Working Group (RSWG) was created to develop an effective approach for the safety of Generation IV advanced nuclear energy systems. Recent RSWG work has focused on the definition of an integrated safety assessment methodology (ISAM) for evaluating the safety of Generation IV systems. ISAM is an integrated 'tool-kit' consisting of 5 analytical techniques that are available and matched to appropriate stages of Generation IV system concept development: 1) qualitative safety features review - QSR, 2) phenomena identification and ranking table - PIRT, 3) objective provision tree - OPT, 4) deterministic and phenomenological analyses - DPA, and 5) probabilistic safety analysis - PSA. The integrated methodology is intended to yield safety-related insights that help actively drive the evolving design throughout the technology development cycle, potentially resulting in enhanced safety, reduced costs, and shortened development time

  9. Determination of uranium (IV) by flow voltammetry

    International Nuclear Information System (INIS)

    Ding Anqing

    1987-01-01

    According to the quantitative reaction of U(IV) and Fe(III) in H 2 SO 4 as well as the relation between current and concentration of substance detected, U(IV) has been determined indirectly by measurement of the electrolysis current of residual Fe(III). The columniform electrode used is made of glass carbon particles. At the range of U(IV) from a few micrograms to 40 μg, the linear relation is excellent. The relative standard deviation is within ±4%. The interference of Fe(II), Ti(IV) and U(VI) is negligible but of Ti(III) is serious. This method has been successfully applied in the determination of actual samples (both out line and on line). Main advantages of this procedure are rapid, simple, small amount of sample (only at microgram level) and easy to realize automation, able to use for on line or process analysis

  10. IV&V Project Assessment Process Validation

    Science.gov (United States)

    Driskell, Stephen

    2012-01-01

    The Space Launch System (SLS) will launch NASA's Multi-Purpose Crew Vehicle (MPCV). This launch vehicle will provide American launch capability for human exploration and travelling beyond Earth orbit. SLS is designed to be flexible for crew or cargo missions. The first test flight is scheduled for December 2017. The SLS SRR/SDR provided insight into the project development life cycle. NASA IV&V ran the standard Risk Based Assessment and Portfolio Based Risk Assessment to identify analysis tasking for the SLS program. This presentation examines the SLS System Requirements Review/System Definition Review (SRR/SDR), IV&V findings for IV&V process validation correlation to/from the selected IV&V tasking and capabilities. It also provides a reusable IEEE 1012 scorecard for programmatic completeness across the software development life cycle.

  11. Genetics Home Reference: mucopolysaccharidosis type IV

    Science.gov (United States)

    ... enzymes, GAGs accumulate within cells, specifically inside the lysosomes . Lysosomes are compartments in the cell that break down ... that cause molecules to build up inside the lysosomes are called lysosomal storage disorders. In MPS IV, ...

  12. Outerbridge Grade IV Cartilage Lesions in the Hip Identified at Arthroscopy.

    Science.gov (United States)

    Bhatia, Sanjeev; Nowak, Douglas D; Briggs, Karen K; Patterson, Diana C; Philippon, Marc J

    2016-05-01

    To determine factors associated with grade IV cartilage defects in the hip in patients undergoing hip arthroscopy with joint pain. Data from consecutive patients who underwent hip arthroscopy performed by a single surgeon over a period of 4 years were included in this study. The study group included 1,097 patients (491 women and 606 men; mean age, 37 years) who underwent hip arthroscopy for pain, had no prior hip surgery, and were aged 18 years or older. Preoperative radiographs, patient demographic characteristics, and operative details were used to identify risk factors for cartilage defects. Grade IV chondral defects were present in 308 of 1,097 hips (28%). Isolated chondral lesions were more frequently observed on the acetabulum (76%) than on the femoral head (24%). Defects of the acetabulum were more commonly anterosuperior (94.7%) and less commonly posterolateral (5.3%). Patients with less than 2 mm of joint space on preoperative radiographs were 8 times more likely to have a grade IV lesion than those with more than 2 mm. Men were more likely than women to have grade IV lesions (35% v 19%, P = .0001); patients with grade IV lesions were older than those without (42 years v 34 years, P = .0001). Hips with grade IV lesions had significantly higher alpha angles than those without (74° v 70°, P = .0001). Patients with grade IV defects reported a longer duration of symptoms than those without (37 months v 27 months, P = .007). Independent risk factors for the presence of grade IV chondral defects were less than 2 mm of joint space, male gender, increasing age, larger alpha angle, and longer duration of symptoms. Grade IV chondral defects in patients undergoing hip arthroscopy were associated with decreased joint space, increased time from symptom onset to arthroscopy, male gender, and larger alpha angles associated with femoroacetabular impingement. Level IV, prognostic case series. Copyright © 2016 Arthroscopy Association of North America. Published by

  13. Current status of NPP generation IV

    International Nuclear Information System (INIS)

    Yohanes Dwi Anggoro; Dharu Dewi; Nurlaila; Arief Tris Yuliyanto

    2013-01-01

    Today development of nuclear technology has reached the stage of research and development of Generation IV nuclear power plants (advanced reactor systems) which is an innovative development from the previous generation of nuclear power plants. There are six types of power generation IV reactors, namely: Very High Temperature Reactor (VHTR), Sodium-cooled Fast Reactor (SFR), Gas-cooled Fast Reactor (GFR), Lead-cooled Fast Reactor (LFR), Molten Salt Reactor (MSR), and Super Critical Water-cooled Reactor (SCWR). The purpose of this study is to know the development of Generation IV nuclear power plants that have been done by the thirteen countries that are members of the Gen IV International Forum (GIF). The method used is review study and refers to various studies related to the current status of research and development of generation IV nuclear power. The result of this study showed that the systems and technology on Generation IV nuclear power plants offer significant advances in sustainability, safety and reliability, economics, and proliferation resistance and physical protection. In addition, based on the research and development experience is estimated that: SFR can be used optimally in 2015, VHTR in 2020, while NPP types GFR, LFR, MSR, and SCWR in 2025. Utilization of NPP generation IV said to be optimal if fulfill the goal of NPP generation IV, such as: capable to generate energy sustainability and promote long-term availability of nuclear fuel, minimize nuclear waste and reduce the long term stewardship burden, has an advantage in the field of safety and reliability compared to the previous generation of NPP and VHTR technology have a good prospects in Indonesia. (author)

  14. Dsm-iv hypochondriasis in primary care

    OpenAIRE

    Escobar, JI; Gara, M; Waitzkin, H; Silver, RC; Holman, A; Compton, W

    1998-01-01

    The object of this study was to assess the prevalence and correlates of the DSM-IV diagnosis of hypochondriasis in a primary care setting. A large sample (N = 1456) of primary care users was given a structured interview to make diagnoses of mood, anxiety, and somatoform disorders and estimate levels of disability. The prevalence of hypochondriasis (DSM-IV) was about 3%. Patients with this disorder had higher levels of medically unexplained symptoms (abridged somatization) and were more impair...

  15. COBRA-IV wire wrap data comparisons

    International Nuclear Information System (INIS)

    Donovan, T.E.; George, T.L.; Wheeler, C.L.

    1979-02-01

    Thermal hydraulic analyses of hexagonally packed wire-wrapped fuel assemblies are complicated by the induced crossflow between adjacent subchannels. The COBRA-IV computer code simultaneously solves the hydrodynamics and thermodynamics of fuel assemblies. The modifications and the results are presented which are predicted by the COBRA-IV calculation. Comparisons are made with data measured in five experimental models of a wire-wrapped fuel assembly

  16. Comparison between steady-state and dynamic I-V measurements from a single-cell thermionic fuel element

    International Nuclear Information System (INIS)

    Wernsman, Bernard

    1997-01-01

    A comparison between steady-state and dynamic I-V measurements from a single-cell thermionic fuel element (TFE) is made. The single-cell TFE used in this study is the prototype for the 40 kW e space nuclear power system that is similar to the 6 kW e TOPAZ-II. The steady-state I-V measurements influence the emitter temperature due to electron cooling. Therefore, to eliminate the steady-state I-V measurement influence on the TFE and provide a better understanding of the behavior of the thermionic energy converter and TFE characteristics, dynamic I-V measurements are made. The dynamic I-V measurements are made at various input power levels, cesium pressures, collector temperatures, and steady-state current levels. From these measurements, it is shown that the dynamic I-V's do not change the TFE characteristics at a given operating point. Also, the evaluation of the collector work function from the dynamic I-V measurements shows that the collector optimization is not due to a minimum in the collector work function but due to an emission optimization. Since the dynamic I-V measurements do not influence the TFE characteristics, it is believed that these measurements can be done at a system level to understand the influence of TFE placement in the reactor as a function of the core thermal distribution

  17. Synthesis, characterization and thermal behaviour of cadmium (II) complexes of photosubstituted octacyano-molybdate(IV) and -tungstate(IV) with ethylenediamine

    International Nuclear Information System (INIS)

    Ali, S.I.; Majid, Kowsar

    1998-01-01

    Photosubstituted ethylenediamine complexes of M(CN) 8 4- [where M =Mo(IV) or W(IV)] with cadmium (II) chloride have been synthesized and characterized by infrared (IR), thermogravimetric (TG) and differential scanning calorimetry (DSC). Both Mo(IV) and W(IV) show similar stoichiometric as well as thermal decomposition behaviour. The assigned general formula is Cd[M(CN) 3 (OH)(C 2 H 8 N 2 ) 2 ](C 2 H 8 N 2 ) Cl 2 XH 2 O [where M = Mo(IV) for which X = 1(I) and M = W(IV) for which X = 2 (II)]. The presence of CN - , OH - and C 2 H 8 N 2 has been shown by observed characteristic IR peaks. The extra absorption bands appearing in complex (II) are due to librational modes of water which show the formation of hydrogen bonding, which is also supported by TG analysis. The loss of these absorption bands rules out this type of bonding in (I). Both the complexes decompose in three steps up to 650 degC after which there is no change. DSC of the complexes also shows three transitions, two exothermic and one endothermic. On the basis of TG and DSC thermograms, mechanism for the decomposition of each step has been shown. Kinetic parameters like activation energy (E a ), frequency factor (A) and entropy of activation (ΔS) have been calculated using different integral methods. (author)

  18. Electrical Characterization of Gold-DNA-Gold Structures in Presence of an External Magnetic Field by Means of I-V Curve Analysis

    Directory of Open Access Journals (Sweden)

    Wan Haliza Abd Majid

    2012-03-01

    Full Text Available This work presents an experimental study of gold-DNA-gold structures in the presence and absence of external magnetic fields with strengths less than 1,200.00 mT. The DNA strands, extracted by standard method were used to fabricate a Metal-DNA-Metal (MDM structure. Its electric behavior when subjected to a magnetic field was studied through its current-voltage (I-V curve. Acquisition of the I-V curve demonstrated that DNA as a semiconductor exhibits diode behavior in the MDM structure. The current versus magnetic field strength followed a decreasing trend because of a diminished mobility in the presence of a low magnetic field. This made clear that an externally imposed magnetic field would boost resistance of the MDM structure up to 1,000.00 mT and for higher magnetic field strengths we can observe an increase in potential barrier in MDM junction. The magnetic sensitivity indicates the promise of using MDM structures as potential magnetic sensors.

  19. ANFIS-Based Modeling for Photovoltaic Characteristics Estimation

    Directory of Open Access Journals (Sweden)

    Ziqiang Bi

    2016-09-01

    Full Text Available Due to the high cost of photovoltaic (PV modules, an accurate performance estimation method is significantly valuable for studying the electrical characteristics of PV generation systems. Conventional analytical PV models are usually composed by nonlinear exponential functions and a good number of unknown parameters must be identified before using. In this paper, an adaptive-network-based fuzzy inference system (ANFIS based modeling method is proposed to predict the current-voltage characteristics of PV modules. The effectiveness of the proposed modeling method is evaluated through comparison with Villalva’s model, radial basis function neural networks (RBFNN based model and support vector regression (SVR based model. Simulation and experimental results confirm both the feasibility and the effectiveness of the proposed method.

  20. Nonoperative management for patients with grade IV blunt hepatic trauma

    Directory of Open Access Journals (Sweden)

    Zago Thiago

    2012-08-01

    Full Text Available Abstract Introduction The treatment of complex liver injuries remains a challenge. Nonoperative treatment for such injuries is increasingly being adopted as the initial management strategy. We reviewed our experience, at a University teaching hospital, in the nonoperative management of grade IV liver injuries with the intent to evaluate failure rates; need for angioembolization and blood transfusions; and in-hospital mortality and complications. Methods This is a retrospective analysis conducted at a single large trauma centre in Brazil. All consecutive, hemodynamically stable, blunt trauma patients with grade IV hepatic injury, between 1996 and 2011, were analyzed. Demographics and baseline characteristics were recorded. Failure of nonoperative management was defined by the need for surgical intervention. Need for angioembolization and transfusions, in-hospital death, and complications were also assessed Results Eighteen patients with grade IV hepatic injury treated nonoperatively during the study period were included. The nonoperative treatment failed in only one patient (5.5% who had refractory abdominal pain. However, no missed injuries and/or worsening of bleeding were observed during the operation. None of the patients died nor need angioembolization. No complications directly related to the liver were observed. Unrelated complications to the liver occurred in three patients (16.7%; one patient developed a tracheal stenosis (secondary to tracheal intubation; one had pleural effusion; and one developed an abscess in the pleural cavity. The hospital length of stay was on average 11.56 days. Conclusions In our experience, nonoperative management of grade IV liver injury for stable blunt trauma patients is associated with high success rates without significant complications.

  1. Nonoperative management for patients with grade IV blunt hepatic trauma.

    Science.gov (United States)

    Zago, Thiago Messias; Tavares Pereira, Bruno Monteiro; Araujo Calderan, Thiago Rodrigues; Godinho, Mauricio; Nascimento, Bartolomeu; Fraga, Gustavo Pereira

    2012-08-22

    The treatment of complex liver injuries remains a challenge. Nonoperative treatment for such injuries is increasingly being adopted as the initial management strategy. We reviewed our experience, at a University teaching hospital, in the nonoperative management of grade IV liver injuries with the intent to evaluate failure rates; need for angioembolization and blood transfusions; and in-hospital mortality and complications. This is a retrospective analysis conducted at a single large trauma centre in Brazil. All consecutive, hemodynamically stable, blunt trauma patients with grade IV hepatic injury, between 1996 and 2011, were analyzed. Demographics and baseline characteristics were recorded. Failure of nonoperative management was defined by the need for surgical intervention. Need for angioembolization and transfusions, in-hospital death, and complications were also assessed Eighteen patients with grade IV hepatic injury treated nonoperatively during the study period were included. The nonoperative treatment failed in only one patient (5.5%) who had refractory abdominal pain. However, no missed injuries and/or worsening of bleeding were observed during the operation. None of the patients died nor need angioembolization. No complications directly related to the liver were observed. Unrelated complications to the liver occurred in three patients (16.7%); one patient developed a tracheal stenosis (secondary to tracheal intubation); one had pleural effusion; and one developed an abscess in the pleural cavity. The hospital length of stay was on average 11.56 days. In our experience, nonoperative management of grade IV liver injury for stable blunt trauma patients is associated with high success rates without significant complications.

  2. Treatment of Stage IV Non-small Cell Lung Cancer

    Science.gov (United States)

    Evans, Tracey; Gettinger, Scott; Hensing, Thomas A.; VanDam Sequist, Lecia; Ireland, Belinda; Stinchcombe, Thomas E.

    2013-01-01

    Background: Stage IV non-small cell lung cancer (NSCLC) is a treatable, but not curable, clinical entity in patients given the diagnosis at a time when their performance status (PS) remains good. Methods: A systematic literature review was performed to update the previous edition of the American College of Chest Physicians Lung Cancer Guidelines. Results: The use of pemetrexed should be restricted to patients with nonsquamous histology. Similarly, bevacizumab in combination with chemotherapy (and as continuation maintenance) should be restricted to patients with nonsquamous histology and an Eastern Cooperative Oncology Group (ECOG) PS of 0 to 1; however, the data now suggest it is safe to use in those patients with treated and controlled brain metastases. Data at this time are insufficient regarding the safety of bevacizumab in patients receiving therapeutic anticoagulation who have an ECOG PS of 2. The role of cetuximab added to chemotherapy remains uncertain and its routine use cannot be recommended. Epidermal growth factor receptor (EGFR) tyrosine kinase inhibitors as first-line therapy are the recommended treatment of those patients identified as having an EGFR mutation. The use of maintenance therapy with either pemetrexed or erlotinib should be considered after four cycles of first-line therapy in those patients without evidence of disease progression. The use of second- and third-line therapy in stage IV NSCLC is recommended in those patients retaining a good PS; however, the benefit of therapy beyond the third-line setting has not been demonstrated. In the elderly and in patients with a poor PS, the use of two-drug, platinum-based regimens is preferred. Palliative care should be initiated early in the course of therapy for stage IV NSCLC. Conclusions: Significant advances continue to be made, and the treatment of stage IV NSCLC has become nuanced and specific for particular histologic subtypes and clinical patient characteristics and according to the

  3. Synthesis and characterization of chiral thorium(IV) and uranium(IV) benzamidinate complexes

    Energy Technology Data Exchange (ETDEWEB)

    Schoene, Sebastian; Maerz, Juliane; Kaden, Peter; Patzschke, Michael; Ikeda-Ohno, Atsushi [Helmholtz-Zentrum Dresden-Rossendorf e.V., Dresden (Germany). Chemistry of the F-Elements

    2017-06-01

    Two chiral benzamidinate complexes of tetravalent actinides (Th(IV) and U(IV)) were synthesized using a salt metathesis reaction of the corresponding actinide(IV) tetrachlorides and the potassium salt of the chiral benzamidine (S,S)-N,N-Bis-(1-phenylethyl)-benzamidine ((S)-HPEBA). The structure of the complexes was determined with single crystal X-ray diffraction. These are the first examples of chiral amidinate complexes of actinides.

  4. Generation IV reactors: reactor concepts

    International Nuclear Information System (INIS)

    Cardonnier, J.L.; Dumaz, P.; Antoni, O.; Arnoux, P.; Bergeron, A.; Renault, C.; Rimpault, G.; Delpech, M.; Garnier, J.C.; Anzieu, P.; Francois, G.; Lecomte, M.

    2003-01-01

    Liquid metal reactor concept looks promising because of its hard neutron spectrum. Sodium reactors benefit a large feedback experience in Japan and in France. Lead reactors have serious assets concerning safety but they require a great effort in technological research to overcome the corrosion issue and they lack a leader country to develop this innovative technology. In molten salt reactor concept, salt is both the nuclear fuel and the coolant fluid. The high exit temperature of the primary salt (700 Celsius degrees) allows a high energy efficiency (44%). Furthermore molten salts have interesting specificities concerning the transmutation of actinides: they are almost insensitive to irradiation damage, some salts can dissolve large quantities of actinides and they are compatible with most reprocessing processes based on pyro-chemistry. Supercritical water reactor concept is based on operating temperature and pressure conditions that infers water to be beyond its critical point. In this range water gets some useful characteristics: - boiling crisis is no more possible because liquid and vapour phase can not coexist, - a high heat transfer coefficient due to the low thermal conductivity of supercritical water, and - a high global energy efficiency due to the high temperature of water. Gas-cooled fast reactors combining hard neutron spectrum and closed fuel cycle open the way to a high valorization of natural uranium while minimizing ultimate radioactive wastes and proliferation risks. Very high temperature gas-cooled reactor concept is developed in the prospect of producing hydrogen from no-fossil fuels in large scale. This use implies a reactor producing helium over 1000 Celsius degrees. (A.C.)

  5. Current transport and capacitance-voltage characteristics of an n-PbTe/p-GaP heterojunction prepared using the electron beam deposition technique

    Science.gov (United States)

    Nasr, Mahmoud; El Radaf, I. M.; Mansour, A. M.

    2018-04-01

    In this study, a crystalline n-PbTe/p-GaP heterojunction was fabricated using the electron beam deposition technique. The structural properties of the prepared heterojunction were examined by X-ray diffraction and scanning electron microscopy. The dark current-voltage characteristics of the heterojunction were investigated at different temperatures ranging from 298 to 398 K. The rectification factor, series resistance, shunt resistance, diode ideality factor, and effective barrier height (ϕb) were determined. The photovoltaic parameters were identified based on the current density-voltage characteristics under illumination. The capacitance-voltage characteristics showed that the junction was abrupt in nature.

  6. Field-aligned current density versus electric potential characteristics for magnetospheric flux tubes

    International Nuclear Information System (INIS)

    Lemaire, J.; Scherer, M.

    1983-01-01

    The field-aligned current density (Jsub(tot)) is a non-linear function of the applied potential difference (phi) between the ionosphere and the magnetosphere. This nonlinear function has been calculated for plasma boundary conditions typical in a dayside cusp magnetic flux tube. The J-characteristic of such a flux tube changes when the temperatures of the warm magnetospheric electrons and of the cold ionospheric electrons are modified; it changes also when the relative density of the warm plasma is modified; the presence of trapped secondary electrons changes also the J-characteristic. The partial currents contributed by the warm and cold electrons, and by warm and cold ions are illustrated. The dynamic characteristic of an electric circuit depends on the static characteristic of each component of the sytem: i.e. the resistive ionosphere, the return current region, and the region of particle precipitation whose field-aligned current/voltage characteristics have been studied in this article

  7. Solubility study of Tc(IV) oxides

    International Nuclear Information System (INIS)

    Liu, D.J.; Fan, X.H.

    2005-01-01

    The deep geological disposal of the high level radioactive wastes is expected to be a safer disposal method in most countries. The long-lived fission product 99 Tc is present in large quantities in nuclear wastes and its chemical behavior in aqueous solution is of considerable interest. Under oxidizing conditions technetium exists as the anionic species TcO 4 - whereas under the reducing conditions, expected to exist in a deep geological repository, it is generally predicted that technetium will be present as TcO 2 ·nH 2 O. Hence, the mobility of Tc(IV) in reducing groundwater may be limited by the solubility of TcO 2 ·nH 2 O under these conditions. Due to this fact it is important to investigate the solubility of TcO 2 ·nH 2 O. The solubility determines the release of radionuclides from waste form and is used as a source term in radionuclide migration analysis in performance assessment of radioactive waste repository. Technetium oxide was prepared by reduction of a technetate solution with Sn 2 + . The solubility of Tc(IV) oxide has been determined in simulated groundwater and redistilled water under aerobic and anaerobic conditions. The effects of pH and CO 3 2- concentration of solution on solubility of Tc(IV) oxide were studied. The concentration of total technetium and Tc(IV) species in the solutions were periodically determined by separating the oxidized and reduced technetium species using a solvent extraction procedure and counting the beta activity of the 99 Tc with a liquid scintillation counter. The experimental results show that the rate of oxidation of Tc(IV) in simulated groundwater and redistilled water is about (1.49-1.86) x 10 -9 mol/(L·d) under aerobic conditions, but Tc(IV) in simulated groundwater and redistilled water is not oxidized under anaerobic conditions. Under aerobic or anaerobic conditions the solubility of Tc(IV) oxide in simulated groundwater and redistilled water is equal on the whole after centrifugation or ultrafiltration. The

  8. Solubility of Tc(IV) oxides

    International Nuclear Information System (INIS)

    Liu, D.J.; Fan, X.H.

    2005-01-01

    Full text of publication follows: The deep geological disposal of the high level radioactive wastes is expected to be a safer disposal method in most countries. The long-lived fission product 99 Tc is present in large quantities in nuclear wastes and its chemical behavior in aqueous solution is of considerable interest. Under the reducing conditions, expected to exist in a deep geological repository, it is generally predicted that technetium will be present as TcO 2 .nH 2 O. The solubility of Tc(IV) is used as a source term in performance assessment of radioactive waste repository. Technetium oxide was prepared by reduction of a technetate solution with Sn 2+ . The solubility of Tc(IV) oxide has been determined in simulated groundwater and re-distilled water under aerobic and anaerobic conditions. The effects of pH and CO 3 2- concentration of solution on solubility of Tc(IV) oxide were studied. The concentration of total technetium and Tc(IV) species in the solutions were periodically determined by separating the oxidized and reduced technetium species using a solvent extraction procedure and counting the beta activity of the 99 Tc with a liquid scintillation counter. The experimental results show that the rate of oxidation of Tc(IV) in simulated groundwater and re-distilled water is about (1.49∼1.86) x 10 -9 mol/(L.d) under aerobic conditions, but Tc(IV) in simulated groundwater and re-distilled water is not oxidized under anaerobic conditions. Under aerobic or anaerobic conditions the solubility of Tc(IV) oxide in simulated groundwater and re-distilled water is equal on the whole after centrifugation or ultrafiltration. The solubility of Tc(IV) oxide decreases with the increase of pH at pH 10 and is pH independent in the range 2 -8 to 10 -9 mol/L at 2 3 2- concentration. These data could be used to estimate the Tc(IV) solubility for cases where solubility limits transport of technetium in reducing environments of high-level waste repositories. (authors)

  9. High cost of stage IV pressure ulcers.

    Science.gov (United States)

    Brem, Harold; Maggi, Jason; Nierman, David; Rolnitzky, Linda; Bell, David; Rennert, Robert; Golinko, Michael; Yan, Alan; Lyder, Courtney; Vladeck, Bruce

    2010-10-01

    The aim of this study was to calculate and analyze the cost of treatment for stage IV pressure ulcers. A retrospective chart analysis of patients with stage IV pressure ulcers was conducted. Hospital records and treatment outcomes of these patients were followed up for a maximum of 29 months and analyzed. Costs directly related to the treatment of pressure ulcers and their associated complications were calculated. Nineteen patients with stage IV pressure ulcers (11 hospital-acquired and 8 community-acquired) were identified and their charts were reviewed. The average hospital treatment cost associated with stage IV pressure ulcers and related complications was $129,248 for hospital-acquired ulcers during 1 admission, and $124,327 for community-acquired ulcers over an average of 4 admissions. The costs incurred from stage IV pressure ulcers are much greater than previously estimated. Halting the progression of early stage pressure ulcers has the potential to eradicate enormous pain and suffering, save thousands of lives, and reduce health care expenditures by millions of dollars. Copyright © 2010 Elsevier Inc. All rights reserved.

  10. Direct complexonometric determination of thorium (IV), uranium (IV), neptunium (IV), plutonium (IV) by titration of diethylenetriaminepentaacetic acid with xylenol orange as indicator

    International Nuclear Information System (INIS)

    Rykov, A.G.; Piskunov, E.M.; Timofeev, G.A.

    1975-01-01

    The purpose of the present work was to develop a method of determining Th(IV), U(IV), Np(N) and Pu(IV) in acid solutions by titration with diethylenetriamine pentacetic acid, the indicator being xylenol orange. It has been established that Th, U, Np and Pu can be determined to within 0.5-1.5%. Th and U in quantities of tens of milligrams can be determined with greater accuracy, attaining hundredths of one per cent. During titration the determination is not hindered by singly- and doubly-charged metal ions, trivalent lanthanides and actinides, except plutonium. The proposed method can be used to determine U(IV) in the presence of considerable quantities of U(VI) and Np(IV) in the presence of Np(V). Total concentrations of uranium or neptunium are determined by reducing uranium (VI) or neptunium (V) by a standard method (for example, using metallic lead, cadmium or zinc amalgam) to the tetravalent state and applying the method described in the paper. (E.P.)

  11. The Contribution of IVS to IGGOS

    Science.gov (United States)

    Nothnagel, A.

    2002-05-01

    Since its inauguration in 1999, the International VLBI Service for Geodesy and Astrometry has made significant progress in the coordination and utilisation of worldwide VLBI resources. Improving the visibility of the IVS components to a wider public in turn led to a higher motivation of the individuals to contribute to the global effort. Not only the number of IVS components but also their investments in terms of funds and manpower demonstrate the increased awareness of the importance of this joint international endeavour. The different demands of the users but also of the contributors often require the definition of priorities which are only being acceptable due to the existence of a strong umbrella organisation like the IVS. Significant progress has also been made in the area of routine data analysis and combination of results. By now, six IVS Analysis Centers provide the redundancy necessary for a robust combination of the results. The use of ITRF2000 station coordinates as the basis for the IVS combined EOP series is the most recent step towards the generation of a consistent chain from the quasi-inertial frame of radio sources to system Earth.

  12. Solubility studies of Np(IV)

    International Nuclear Information System (INIS)

    Zhang Yingjie; Yao Jun; Jiao Haiyang; Ren Lihong; Zhou Duo; Fan Xianhua

    2001-01-01

    The solubility of Np(IV) in simulated underground water and redistilled water has been measured with the variations of pH(6-12) and storage time (0-100 d) in the presence of reductant (Na 2 S 2 O 4 , metallic Fe). All experiments are performed in a low oxygen concentration glove box containing high purity Ar(99.99%), with an oxygen content of less than 5 x 10 -6 mol/mol. Experimental results show that the variation of pH in solution has little effect on the solubility of Np(IV) in the two kinds of water; the measured solubility of Np(IV) is affected by the composition of solution; with Na 2 S 2 O 4 as a reductant, the solubility of Np(IV) in simulated underground water is (9.23 +- 0.48) x 10 -10 mol/L, and that in redistilled water is (8.31 +- 0.35) x 10 -10 mol/L; with metallic Fe as a reductant, the solubility of Np(IV) in simulated underground water is (1.85 +- 0.56) x 10 -9 mol/L, and that in redistilled water is (1.48 +- 0.66) x 10 -9 mol/L

  13. A theoretical study of resonant tunneling characteristics in triangular double-barrier diodes

    International Nuclear Information System (INIS)

    Wang Hongmei; Xu Huaizhe; Zhang Yafei

    2006-01-01

    Resonant tunneling characteristics of triangular double-barrier diodes have been investigated systematically in this Letter, using Airy function approach to solve time-independent Schroedinger function in triangular double-barrier structures. Originally, the exact analytic expressions of quasi-bound levels and quasi-level lifetime in symmetrical triangular double-barrier structures have been derived within the effective-mass approximation as a function of structure parameters including well width, slope width and barrier height. Based on our derived analytic expressions, numerical results show that quasi-bound levels and quasi-level lifetime vary nearly linearly with the structure parameters except that the second quasi-level lifetime changes parabolically with slope width. Furthermore, according to our improved transmission coefficient of triangular double-barrier structures under external electric field, the current densities of triangular double-barrier diodes with different slope width at 0 K have been calculated numerically. The results show that the N-shaped negative differential resistance behaviors have been observed in current-voltage characteristics and current-voltage characteristics depend on the slope width

  14. On the stabilization of niobium(V) solutions by zirconium(IV) and hafnium(IV)

    DEFF Research Database (Denmark)

    Sørensen, E.; Bjerre, A.B.

    1992-01-01

    Niobium cannot be separated from zirconium or hafnium when these elements occur together in solution with common anions such as chloride and sulphate. This is ascribed to the co-polymerization of niobium(V) and the hydrolysed ionic species of zirconium(IV) and hafnium(IV) to form colloidal...

  15. Complexation of the An(IV) by NTA; Complexation des An(IV) par le NTA

    Energy Technology Data Exchange (ETDEWEB)

    Bonin, L. [Paris-11 Univ., 91 - Orsay (France)]|[CEA Valrho, Lab. de Chimie des Actinides (LCA), 30 - Marcoule (France)

    2006-07-01

    In the framework of the Nuclear and Environmental Toxicology program, developed in France, it has been decided to take again the studies concerning the actinides decorporation. A similar study of the neptunium complexation by the citrate ions has been carried out on the complexation of Np(IV) with the nitrilotriacetic acid (NTA). The NTA can be considered as a model molecule of the de-corporating molecules (amino-carboxy- ligand). The results of the spectrophotometric measurements being encouraging, the behaviour of several actinides at the same oxidation state (+IV) (Th(IV), U(IV), Np(IV), and Pu(IV)) has been determined. The experimental results are presented. In order to determine the structure of the complexes of stoichiometry 1:2 An(IV)-(NTA){sub 2} in solution, quantic chemistry calculations and EXAFS measurements have been carried out in parallel. These studies confirm the presence of An(IV)-nitrogen bonds whose length decreases from thorium to plutonium and indicate the presence of a water molecule bound to the thorium and the uranium (coordination number 8 for Np/Pu, 9 for Th/U). The evolution of the complexation constants determined in this study in terms of 1/r (r ionic radius of the cation taking into account its coordination number 8 or 9) confirms the change of the coordination number between Th/U and Np/Pu. (O.M.)

  16. Transuranium perrhenates: Np(IV), Pu(IV) and (III), Am (III)

    International Nuclear Information System (INIS)

    Silvestre, Jean-Paul; Freundlich, William; Pages, Monique

    1977-01-01

    Synthesis in aqueous solution and by solid state reactions, crystallographical characterization and study of the stability of some transuranium perrhenates: Asup(n+)(ReO 4 - )sub(n) (A=Np(IV), Pu(IV), Pu(III), Am(III) [fr

  17. Evolutionary origin of type IV classical cadherins in arthropods.

    Science.gov (United States)

    Sasaki, Mizuki; Akiyama-Oda, Yasuko; Oda, Hiroki

    2017-06-17

    Classical cadherins are a metazoan-specific family of homophilic cell-cell adhesion molecules that regulate morphogenesis. Type I and type IV cadherins in this family function at adherens junctions in the major epithelial tissues of vertebrates and insects, respectively, but they have distinct, relatively simple domain organizations that are thought to have evolved by independent reductive changes from an ancestral type III cadherin, which is larger than derived paralogs and has a complicated domain organization. Although both type III and type IV cadherins have been identified in hexapods and branchiopods, the process by which the type IV cadherin evolved is still largely unclear. Through an analysis of arthropod genome sequences, we found that the only classical cadherin encoded in chelicerate genomes was the type III cadherin and that the two type III cadherin genes found in the spider Parasteatoda tepidariorum genome exhibited a complex yet ancestral exon-intron organization in arthropods. Genomic and transcriptomic data from branchiopod, copepod, isopod, amphipod, and decapod crustaceans led us to redefine the type IV cadherin category, which we separated into type IVa and type IVb, which displayed a similar domain organization, except type IVb cadherins have a larger number of extracellular cadherin (EC) domains than do type IVa cadherins (nine versus seven). We also showed that type IVa cadherin genes occurred in the hexapod, branchiopod, and copepod genomes whereas only type IVb cadherin genes were present in malacostracans. Furthermore, comparative characterization of the type IVb cadherins suggested that the presence of two extra EC domains in their N-terminal regions represented primitive characteristics. In addition, we identified an evolutionary loss of two highly conserved cysteine residues among the type IVa cadherins of insects. We provide a genomic perspective of the evolution of classical cadherins among bilaterians, with a focus on the Arthropoda

  18. IRIS Responsiveness to Generation IV Road-map Goals

    International Nuclear Information System (INIS)

    Carelli, M.D.; Paramonov, D.V.; Petrovic, B.

    2002-01-01

    The DOE Generation IV road-map process is in its second and final year. Almost one hundred concepts submitted from all over the world have been reviewed against the Generation IV goals of resources sustainability; safety and reliability; and, economics. Advanced LWRs are taken as the reference point. IRIS (International Reactor Innovative and Secure), a 100-335 MWe integral light water reactor being developed by a vast international consortium led by Westinghouse, is one on the concepts being considered in the road-map and is perhaps the most visible representative of the concept set known as Integral Primary System Reactors (IPSR). This paper presents how IRIS satisfies the prescribed goals. The first goal of resource sustainability includes criteria like utilization of fuel resources, amount and toxicity of waste produced, environmental impact, proliferation and sabotage resistance. As a thermal reactor IRIS does not have the same fuel utilization as fast reactors. However, it has a significant flexibility in fuel cycles as it is designed to utilize either UO 2 or MOX with straight burn cycles of 4 to 10 years, depending on the fissile content. High discharge burnup and Pu recycling result in good fuel utilization and lower waste; IRIS has also attractive proliferation resistance characteristics, due to the reduced accessibility of the fuel. The safety and reliability goal include reliability, workers' exposure, robust safety features, models with well characterized uncertainty, source term and mechanisms of energy release, robust mitigation of accidents. IRIS is significantly better than advanced LWRs because of its safety by design which eliminates a variety of accidents such as LOCAs, its containment vessel coupled design which maintains the core safely covered during the accident sequences, its design simplification features such as no (or reduced) soluble boron, internal shielding and four-year refueling/maintenance interval which significantly reduce

  19. Oxochloroalkoxide of the Cerium (IV and Titanium (IV as oxides precursor

    Directory of Open Access Journals (Sweden)

    Machado Luiz Carlos

    2002-01-01

    Full Text Available The Cerium (IV and Titanium (IV oxides mixture (CeO2-3TiO2 was prepared by thermal treatment of the oxochloroisopropoxide of Cerium (IV and Titanium (IV. The chemical route utilizing the Cerium (III chloride alcoholic complex and Titanium (IV isopropoxide is presented. The compound Ce5Ti15Cl16O30 (iOPr4(OH-Et15 was characterized by elemental analysis, FTIR and TG/DTG. The X-ray diffraction patterns of the oxides resulting from the thermal decomposition of the precursor at 1000 degreesC for 36 h indicated the formation of cubic cerianite (a = 5.417Å and tetragonal rutile (a = 4.592Å and (c = 2.962 Å, with apparent crystallite sizes around 38 and 55nm, respectively.

  20. Spectroscopy and chemistry of uranium IV

    International Nuclear Information System (INIS)

    Folcher, G.; Rigny, P.

    1980-06-01

    Different fundamental research papers on uranium IV are presented, some were never edited. Molecular spectroscopy was used for identification and structural study of uranium IV in aqueous or organic solutions. The fields studied are: coordination, stereochemistry, electronic structure and chemical properties. For interpretation of results some studies were made with solid compounds or with thorium compounds or thorium complexes. Knowledge of actinides chemistry is improved, uranium and thorium being models for 5 f ions, extractive chemistry is better understood and new applications are possible [fr

  1. Vectorization at the KENO-IV code

    International Nuclear Information System (INIS)

    Asai, K.; Higuchi, K.; Katakura, J.

    1986-01-01

    The multigroup criticality safety code KENO-IV has been vectorized and tested on the FACOM VP-100 vector processor. At first, the vectorized KENO-IV on a scalar processor was slower than the original one by a factor of 1.4 because of the overhead introduced by vectorization. Making modifications of algorithms and techniques for vectorization, the vectorized version has become faster than the original one by a factor of 1.4 on the vector processor. For further speedup of the code, some improvements on compiler and hardware, especially on addition of Monte Carlo pipelines to the vector processor, are discussed

  2. Functions in Free-Format RPG IV

    CERN Document Server

    Martin, Jim

    2009-01-01

    Written especially for programmers adopting a free-format style, this manual explores the role of functions in writing RPG IV programs. Demonstrating the potential of functions, many topics are explored such as details about existing RPG IV built-in functions, writing new functions, using ILE concepts to use C functions, and utilizing IBM API's functions. Explaining how to write small programs, either as sub-procedures or modules, and how to gather those parts together to make programs that are easy to write and maintain, this is a natural next step for programmers familiar with a free-format

  3. Gen IV. Technical and economical aspects

    International Nuclear Information System (INIS)

    Kaluzny, Y.; Legee, F.

    2010-01-01

    In this presentation author deals with development of nuclear reactor type of Generation IV. He concluded that: - Nuclear energy is competitive with regards to the other generation sources; Its competitiveness also increases with CO 2 cost. Considering the nuclear cost breakdown of LWR reactors, it turns out that the uranium is currently not in the range of a threshold for FBR deployment; - The global balance of uranium supply and demand and also innovation required to fulfil GEN IV objectives would probably imply the emergence of fast reactor competitiveness after the turn of the mid-century; - We shall need fast reactors in the coming decade.

  4. Electrical characteristics of ZnO nanorods reinforced polymer nanocomposite thin films

    Energy Technology Data Exchange (ETDEWEB)

    Bhattacharjee, Snigdha; Roy, Asim, E-mail: 28.asim@gmail.com [Department of Physics National Institute Technology Silchar Silchar-788010, Assam (India)

    2015-05-15

    ZnO nanorods have been prepared by simple chemical method, which is used to fabricate organic bistable devices (OBDs). OBDs are fabricated by incorporating different weight percent (wt %) of chemically synthesized Zinc Oxide (ZnO) nanorods into polymethylmethacrylate (PMMA). Current-voltage (I-V) measurements of the spin coated ZnO+PMMA nanocomopsite thin film on indium tin oxide (ITO) coated glass substrate showed current hysteresis behaviour, which is an indication of memory effect. The samples exhibit two distinct resistance states, ON and OFF states, characterised by relatively low and high resistance of the OBDs, respectively. It is also observed that with change in ZnO dopant concentration the value of ON/OFF current changes. Higher ON/OFF current ratio is desired for practical applications. Current conduction mechanism of the devices has been explained invoking various existing models, and it has been found that the trapped-charge-limited conduction mechanism was dominant in our samples.

  5. Abdominal 64-MDCT for suspected appendicitis: the use of oral and IV contrast material versus IV contrast material only.

    Science.gov (United States)

    Anderson, Stephan W; Soto, Jorge A; Lucey, Brian C; Ozonoff, Al; Jordan, Jacqueline D; Ratevosian, Jirair; Ulrich, Andrew S; Rathlev, Niels K; Mitchell, Patricia M; Rebholz, Casey; Feldman, James A; Rhea, James T

    2009-11-01

    The objective of our study was to compare the diagnostic accuracy of IV contrast-enhanced 64-MDCT with and without the use of oral contrast material in diagnosing appendicitis in patients with abdominal pain. We conducted a randomized trial of a convenience sample of adult patients presenting to an urban academic emergency department with acute nontraumatic abdominal pain and clinical suspicion of appendicitis, diverticulitis, or small-bowel obstruction. Patients were enrolled between 8 am and 11 pm when research assistants were present. Consenting subjects were randomized into one of two groups: Group 1 subjects underwent 64-MDCT performed with oral and IV contrast media and group 2 subjects underwent 64-MDCT performed solely with IV contrast material. Three expert radiologists independently reviewed the CT examinations, evaluating for the presence of appendicitis. Each radiologist interpreted 202 examinations, ensuring that each examination was interpreted by two radiologists. Individual reader performance and a combined interpretation performance of the two readers assigned to each case were calculated. In cases of disagreement, the third reader was asked to deliver a tiebreaker interpretation to be used to calculate the combined reader performance. Final outcome was based on operative, clinical, and follow-up data. We compared radiologic diagnoses with clinical outcomes to calculate the diagnostic accuracy of CT in both groups. Of the 303 patients enrolled, 151 patients (50%) were randomized to group 1 and the remaining 152 (50%) were randomized to group 2. The combined reader performance for the diagnosis of appendicitis in group 1 was a sensitivity of 100% (95% CI, 76.8-100%) and specificity of 97.1% (95% CI, 92.7-99.2%). The performance in group 2 was a sensitivity of 100% (73.5-100%) and specificity of 97.1% (92.9-99.2%). Patients presenting with nontraumatic abdominal pain imaged using 64-MDCT with isotropic reformations had similar characteristics for the

  6. Bis(4-methylpiperidinium hexachloridostannate(IV

    Directory of Open Access Journals (Sweden)

    Madeleine Helliwell

    2008-04-01

    Full Text Available The crystal structure of the title compound, (C6H14N2[SnCl6], is built of 4-methylpiperidinium cations, occupying special positions on the mirror plane, and hexachloridostannate(IV anions on a special position of 2/m symmetry. The ions are linked via N—H...Cl hydrogen bonds into chains running along the b axis.

  7. The carbonate complexation of plutonium(IV)

    International Nuclear Information System (INIS)

    Hobart, D.E.; Palmer, P.D.; Newton, T.W.

    1985-01-01

    Plutonium(IV) carbonate complexes are expected to be of particular importance in typical groundwaters at the Yucca Mountain site of the candidate nuclear waste repository being studied by the Nevada Nuclear Waste Storage Investigations Project. The chemistry of these complexes is also important in the areas of nuclear fuel reprocessing and purification, actinide separations, and environmental studies. This report describes initial experiments performed to determine the identity and equilibrium quotients of plutonium(IV) carbonate complexes. These experiments were performed at pH values between 7.2 and 9.6 using a spectrophotometric method. In addition, a brief review of the published literature on Pu(IV) carbonate complexes is presented. Since Pu(IV) exhibits low solubility in the near-neutral pH range, a complex-competition reaction where citrate ligands compete with carbonate ions for the plutonium will be employed. This will permit us to study the pure carbonate system; study the mixed carbonate/citrate system, and confirm and extend the literature work on the pure citrate system. The current experiments have demonstrated the existence of at least three distinct species in the pH region studied. This work will continue in the extended study of the pure citrate system, followed by the investigation of the citrate/carbonate complex/competition reaction. 9 refs., 4 figs., 2 tabs

  8. Painlevé IV coherent states

    International Nuclear Information System (INIS)

    Bermudez, David; Contreras-Astorga, Alonso; Fernández C, David J.

    2014-01-01

    A simple way to find solutions of the Painlevé IV equation is by identifying Hamiltonian systems with third-order differential ladder operators. Some of these systems can be obtained by applying supersymmetric quantum mechanics (SUSY QM) to the harmonic oscillator. In this work, we will construct families of coherent states for such subset of SUSY partner Hamiltonians which are connected with the Painlevé IV equation. First, these coherent states are built up as eigenstates of the annihilation operator, then as displaced versions of the extremal states, both involving the related third-order ladder operators, and finally as extremal states which are also displaced but now using the so called linearized ladder operators. To each SUSY partner Hamiltonian corresponds two families of coherent states: one inside the infinite subspace associated with the isospectral part of the spectrum and another one in the finite subspace generated by the states created through the SUSY technique. - Highlights: • We use SUSY QM to obtain Hamiltonians with third-order differential ladder operators. • We show that these systems are related with the Painlevé IV equation. • We apply different definitions of coherent states to these Hamiltonians using the third-order ladder operators and some linearized ones. • We construct families of coherent states for such systems, which we called Painlevé IV coherent states

  9. Resonance transition array of Yb IV

    International Nuclear Information System (INIS)

    Kaufman, V.; Sugar, J.

    1976-01-01

    Nineteen pairs of lines in the wavelength range of 800--1300 A were identified as transitions to the two levels of the ground term of Yb IV, 4f 13 2 F. The 2 F 5 / 2 -- 2 F 7 / 2 interval is 10 214.0 cm -1 with an rms deviation of 0.4 cm -1

  10. Industrial Waste Landfill IV upgrade package

    International Nuclear Information System (INIS)

    1994-01-01

    The Y-12 Plant, K-25 Site, and ORNL are managed by DOE's Operating Contractor (OC), Martin Marietta Energy Systems, Inc. (Energy Systems) for DOE. Operation associated with the facilities by the Operating Contractor and subcontractors, DOE contractors and the DOE Federal Building result in the generation of industrial solid wastes as well as construction/demolition wastes. Due to the waste streams mentioned, the Y-12 Industrial Waste Landfill IV (IWLF-IV) was developed for the disposal of solid industrial waste in accordance to Rule 1200-1-7, Regulations Governing Solid Waste Processing and Disposal in Tennessee. This revised operating document is a part of a request for modification to the existing Y-12 IWLF-IV to comply with revised regulation (Rule Chapters 1200-1-7-.01 through 1200-1-7-.08) in order to provide future disposal space for the ORR, Subcontractors, and the DOE Federal Building. This revised operating manual also reflects approved modifications that have been made over the years since the original landfill permit approval. The drawings referred to in this manual are included in Drawings section of the package. IWLF-IV is a Tennessee Department of Environmental and Conservation/Division of Solid Waste Management (TDEC/DSWM) Class 11 disposal unit

  11. IV-DSA of vertigo patients

    International Nuclear Information System (INIS)

    Watanabe, Hiromi; Ito, Masatoshi; Takita, Kimio; Matsuzawa, Taiju.

    1988-01-01

    With IV-DSA(Intra-Venous Digital Subtraction Angiography), we examined the relations between vertigo or dizziness and asymmetries of cervical vertebral arteries. In this time, as the asymmetries we chose next three; hemi-stenosis, hemi-occulusion and hemi-strong tortuosity. In the appearance of the asymmetries, there was no differance between those who complain vertigo or dizziness and others. (author)

  12. 21 CFR 1308.14 - Schedule IV.

    Science.gov (United States)

    2010-04-01

    ... 21 Food and Drugs 9 2010-04-01 2010-04-01 false Schedule IV. 1308.14 Section 1308.14 Food and... isomers is possible: (1) Fenfluramine 1670 (e) Stimulants. Unless specifically excepted or unless listed... the following substances having a stimulant effect on the central nervous system, including its salts...

  13. Painlevé IV coherent states

    Energy Technology Data Exchange (ETDEWEB)

    Bermudez, David, E-mail: david.bermudez@weizmann.ac.il [Department of Physics of Complex Systems, Weizmann Institute of Science, Rehovot 76100 (Israel); Departamento de Física, Cinvestav, A.P. 14-740, 07000 México D.F. (Mexico); Contreras-Astorga, Alonso, E-mail: aloncont@iun.edu [Department of Mathematics and Actuarial Science, Indiana University Northwest, 3400 Broadway, Gary IN 46408 (United States); Departamento de Física, Cinvestav, A.P. 14-740, 07000 México D.F. (Mexico); Fernández C, David J., E-mail: david@fis.cinvestav.mx [Departamento de Física, Cinvestav, A.P. 14-740, 07000 México D.F. (Mexico)

    2014-11-15

    A simple way to find solutions of the Painlevé IV equation is by identifying Hamiltonian systems with third-order differential ladder operators. Some of these systems can be obtained by applying supersymmetric quantum mechanics (SUSY QM) to the harmonic oscillator. In this work, we will construct families of coherent states for such subset of SUSY partner Hamiltonians which are connected with the Painlevé IV equation. First, these coherent states are built up as eigenstates of the annihilation operator, then as displaced versions of the extremal states, both involving the related third-order ladder operators, and finally as extremal states which are also displaced but now using the so called linearized ladder operators. To each SUSY partner Hamiltonian corresponds two families of coherent states: one inside the infinite subspace associated with the isospectral part of the spectrum and another one in the finite subspace generated by the states created through the SUSY technique. - Highlights: • We use SUSY QM to obtain Hamiltonians with third-order differential ladder operators. • We show that these systems are related with the Painlevé IV equation. • We apply different definitions of coherent states to these Hamiltonians using the third-order ladder operators and some linearized ones. • We construct families of coherent states for such systems, which we called Painlevé IV coherent states.

  14. National Coastal Condition Report IV (2012)

    Science.gov (United States)

    The NCCR IV data shows an overall condition score of 3.0 for the nation’s coastal waters; although this score has improved substantially since 1990, the overall condition of the nation’s coastal resources continues to be rated fair.

  15. IVS: Current Status and Future Plans

    Science.gov (United States)

    Behrend, D.; Nothnagel, A.; Petrachenko, W. T.; Tuccari, G.

    2016-12-01

    The International VLBI Service for Geodesy and Astrometry (IVS) is a globally operating service that coordinates and performs Very Long Baseline Interferometry (VLBI) activities through its constituent components. The VLBI activities are associated with the creation, provision, dissemination, and archiving of relevant VLBI data and products. The products mostly pertain to the determination of the celestial and terrestrial reference frames, the Earth orientation parameters (EOP), atmospheric parameters as well as other ancillary parameters. The IVS observational network currently consists of about 40 radio telescopes worldwide. Subsets of these telescopes (8-12 stations) participate in 24-hour observing sessions that are run several times per week and in 1-hour intensive sessions for UT1 determination every day. The current VLBI network was developed mainly in the 1970s and 1980s. A number of factors, including aging infrastructure and demanding new scientific requirements, started to challenge its future sustainability and relevance. In response, the IVS and other groups developed and started implementing the next generation VLBI system, called VGOS (VLBI Global Observing System), at existing and new sites. The VGOS network is expected to reach maturity in the early 2020s. We describe the current status, progress, and anticipated prospects of geodetic/astrometric VLBI and the IVS.

  16. Scylla IV-P theta pinch

    International Nuclear Information System (INIS)

    Bailey, A.G.; Chandler, G.I.; Ekdahl, C.A. Jr.; Lillberg, J.W.; Machalek, M.D.; Seibel, F.T.

    1976-01-01

    Scylla IV-P is a flexible, linear theta pinch designed to investigate high-density linear concepts, end-stoppering, alternate heating methods, and plasma injection techniques relevant to a pure fusion reactor and/or a fusion-fission hybrid system. The construction and experimental arrangement of the device are briefly described

  17. Gen IV Materials Handbook Implementation Plan

    International Nuclear Information System (INIS)

    Rittenhouse, P.; Ren, W.

    2005-01-01

    A Gen IV Materials Handbook is being developed to provide an authoritative single source of highly qualified structural materials information and materials properties data for use in design and analyses of all Generation IV Reactor Systems. The Handbook will be responsive to the needs expressed by all of the principal government, national laboratory, and private company stakeholders of Gen IV Reactor Systems. The Gen IV Materials Handbook Implementation Plan provided here addresses the purpose, rationale, attributes, and benefits of the Handbook and will detail its content, format, quality assurance, applicability, and access. Structural materials, both metallic and ceramic, for all Gen IV reactor types currently supported by the Department of Energy (DOE) will be included in the Gen IV Materials Handbook. However, initial emphasis will be on materials for the Very High Temperature Reactor (VHTR). Descriptive information (e.g., chemical composition and applicable technical specifications and codes) will be provided for each material along with an extensive presentation of mechanical and physical property data including consideration of temperature, irradiation, environment, etc. effects on properties. Access to the Gen IV Materials Handbook will be internet-based with appropriate levels of control. Information and data in the Handbook will be configured to allow search by material classes, specific materials, specific information or property class, specific property, data parameters, and individual data points identified with materials parameters, test conditions, and data source. Details on all of these as well as proposed applicability and consideration of data quality classes are provided in the Implementation Plan. Website development for the Handbook is divided into six phases including (1) detailed product analysis and specification, (2) simulation and design, (3) implementation and testing, (4) product release, (5) project/product evaluation, and (6) product

  18. Coordination and solvent extraction behaviour of oxozirconium(IV), thorium(IV) and dioxouranium(VI)

    International Nuclear Information System (INIS)

    Dash, K.C.

    1989-01-01

    The systematic liquid-liquid extraction behaviour of oxozirconium (IV), thorium(IV) and dioxouranium(VI) have been investigated using a number of synthesised and commercial chelating extractants. The synergism or antagonism for these processes in presence of neutral donor ligands have also been identified and the conditions for separation and isolation of pure individual metal ions have been established. The coordination behaviour of oxozirconium(IV), thorium(IV) and dioxouranium(VI) with a large number of mono- and polydentate ligands have been studied. With oxozirconium(IV), invariably always a cyclic, tetranuclear species is obtained, derived from the tetrameric structure of the parent ZrOCl 2 .8H 2 O which is actually (Zr 4 (OH) 8 (H 2 O) 16 )Cl 8 .12H 2 O. No simple, monomeric oxozirconium(IV) complex was obtained. Uranium(VI) and thorium(IV) form a wide variety of complexes of higher coordination numbers and several bi- and trinuclear complexes were also characterised where the two adjacent metal centres are joined to each other by a double hydroxo-bridge. (author). 69 refs., 3 figs., 4 tabs

  19. An External Independent Validation of APACHE IV in a Malaysian Intensive Care Unit.

    Science.gov (United States)

    Wong, Rowena S Y; Ismail, Noor Azina; Tan, Cheng Cheng

    2015-04-01

    Intensive care unit (ICU) prognostic models are predominantly used in more developed nations such as the United States, Europe and Australia. These are not that popular in Southeast Asian countries due to costs and technology considerations. The purpose of this study is to evaluate the suitability of the acute physiology and chronic health evaluation (APACHE) IV model in a single centre Malaysian ICU. A prospective study was conducted at the single centre ICU in Hospital Sultanah Aminah (HSA) Malaysia. External validation of APACHE IV involved a cohort of 916 patients who were admitted in 2009. Model performance was assessed through its calibration and discrimination abilities. A first-level customisation using logistic regression approach was also applied to improve model calibration. APACHE IV exhibited good discrimination, with an area under receiver operating characteristic (ROC) curve of 0.78. However, the model's overall fit was observed to be poor, as indicated by the Hosmer-Lemeshow goodness-of-fit test (Ĉ = 113, P discrimination was not affected. APACHE IV is not suitable for application in HSA ICU, without further customisation. The model's lack of fit in the Malaysian study is attributed to differences in the baseline characteristics between HSA ICU and APACHE IV datasets. Other possible factors could be due to differences in clinical practice, quality and services of health care systems between Malaysia and the United States.

  20. Approximating a DSM-5 Diagnosis of PTSD Using DSM-IV Criteria

    Science.gov (United States)

    Rosellini, Anthony J.; Stein, Murray B.; Colpe, Lisa J.; Heeringa, Steven G.; Petukhova, Maria V.; Sampson, Nancy A.; Schoenbaum, Michael; Ursano, Robert J.; Kessler, Ronald C.

    2015-01-01

    Background Diagnostic criteria for DSM-5 posttraumatic stress disorder (PTSD) are in many ways similar to DSM-IV criteria, raising the possibility that it might be possible to closely approximate DSM-5 diagnoses using DSM-IV symptoms. If so, the resulting transformation rules could be used to pool research data based on the two criteria sets. Methods The Pre-Post Deployment Study (PPDS) of the Army Study to Assess Risk and Resilience in Servicemembers (Army STARRS) administered a blended 30-day DSM-IV and DSM-5 PTSD symptom assessment based on the civilian PTSD Checklist for DSM-IV (PCL-C) and the PTSD Checklist for DSM-5 (PCL-5). This assessment was completed by 9,193 soldiers from three US Army Brigade Combat Teams approximately three months after returning from Afghanistan. PCL-C items were used to operationalize conservative and broad approximations of DSM-5 PTSD diagnoses. The operating characteristics of these approximations were examined compared to diagnoses based on actual DSM-5 criteria. Results The estimated 30-day prevalence of DSM-5 PTSD based on conservative (4.3%) and broad (4.7%) approximations of DSM-5 criteria using DSM-IV symptom assessments were similar to estimates based on actual DSM-5 criteria (4.6%). Both approximations had excellent sensitivity (92.6-95.5%), specificity (99.6-99.9%), total classification accuracy (99.4-99.6%), and area under the receiver operating characteristic curve (0.96-0.98). Conclusions DSM-IV symptoms can be used to approximate DSM-5 diagnoses of PTSD among recently-deployed soldiers, making it possible to recode symptom-level data from earlier DSM-IV studies to draw inferences about DSM-5 PTSD. However, replication is needed in broader trauma-exposed samples to evaluate the external validity of this finding. PMID:25845710

  1. Nanofibrous p-n Junction and Its Rectifying Characteristics

    Directory of Open Access Journals (Sweden)

    Jian Fang

    2013-01-01

    Full Text Available Randomly oriented tin oxide (SnO2 nanofibers and poly(3,4-ethylenedioxythiophene-poly(styrenesulfonate/polyvinylpyrrolidone (PEDOT:PSS/PVP nanofibers were prepared by a two-step electrospinning technique to form a layered fibrous mat. The current-voltage measurement revealed that the fibrous mat had an obvious diode-rectifying characteristic. The thickness of the nanofiber layers was found to have a considerable influence on the device resistance and rectifying performance. Such an interesting rectifying property was attributed to the formation of a p-n junction between the fibrous SnO2 and PEDOT:PSS/PVP layers. This is the first report that a rectifying junction can be formed between two layers of electrospun nanofiber mats, and the resulting nanofibrous diode rectifier may find applications in sensors, energy harvest, and electronic textiles.

  2. The experimental research of the electric characteristics of discharge in the quasi-steady plasma accelerator with the longitudinal magnetic field

    International Nuclear Information System (INIS)

    Kozlov, A.N.; Klimov, N.S.; Moskacheva, A.A.; Podkovyrov, V.L.; Drukarenko, S.P.

    2009-01-01

    Installation of the coaxial quasi-steady high-current one-stage plasma accelerator with a longitudinal magnetic field is created. The lead experiments have shown an opportunity of realization of the discharges, formation of the ionization front and generation of the plasma streams at the presence of a longitudinal field in the accelerator channel. The current-voltage characteristics of the discharge at the presence and absence of a longitudinal field are measured. It is established that a weak longitudinal field does not render the appreciable influence on the integrated characteristics of discharge in the accelerator with the rod anode in an ion current transport regime

  3. Identification of novel dipeptidyl peptidase IV (DPP-IV) inhibitory peptides in camel milk protein hydrolysates.

    Science.gov (United States)

    Nongonierma, Alice B; Paolella, Sara; Mudgil, Priti; Maqsood, Sajid; FitzGerald, Richard J

    2018-04-01

    Nine novel dipeptidyl peptidase IV (DPP-IV) inhibitory peptides (FLQY, FQLGASPY, ILDKEGIDY, ILELA, LLQLEAIR, LPVP, LQALHQGQIV, MPVQA and SPVVPF) were identified in camel milk proteins hydrolysed with trypsin. This was achieved using a sequential approach combining liquid chromatography tandem mass spectrometry (LC-MS/MS), qualitative/quantitative structure activity relationship (QSAR) and confirmatory studies with synthetic peptides. The most potent camel milk protein-derived DPP-IV inhibitory peptides, LPVP and MPVQA, had DPP-IV half maximal inhibitory concentrations (IC 50 ) of 87.0 ± 3.2 and 93.3 ± 8.0 µM, respectively. DPP-IV inhibitory peptide sequences identified within camel and bovine milk protein hydrolysates generated under the same hydrolysis conditions differ. This was linked to differences in enzyme selectivity for peptide bond cleavage of camel and bovine milk proteins as well as dissimilarities in their amino acid sequences. Camel milk proteins contain novel DPP-IV inhibitory peptides which may play a role in the regulation of glycaemia in humans. Copyright © 2017 Elsevier Ltd. All rights reserved.

  4. DSM-IV hypochondriasis in primary care.

    Science.gov (United States)

    Escobar, J I; Gara, M; Waitzkin, H; Silver, R C; Holman, A; Compton, W

    1998-05-01

    The object of this study was to assess the prevalence and correlates of the DSM-IV diagnosis of hypochondriasis in a primary care setting. A large sample (N = 1456) of primary care users was given a structured interview to make diagnoses of mood, anxiety, and somatoform disorders and estimate levels of disability. The prevalence of hypochondriasis (DSM-IV) was about 3%. Patients with this disorder had higher levels of medically unexplained symptoms (abridged somatization) and were more impaired in their physical functioning than patients without the disorder. Of the various psychopathologies examined, major depressive syndromes were the most frequent among patients with hypochondriasis. Interestingly, unlike somatization disorder, hypochondriasis was not related to any demographic factor. Hypochondriasis is a relatively rare condition in primary care that is largely separable from somatization disorder but seems closely intertwined with the more severe depressive syndromes.

  5. Impulsive EUV bursts observed in C IV with OSO-8

    International Nuclear Information System (INIS)

    Grant Athay, R.; White, O.R.; Lites, B.W.

    1980-01-01

    Time sequences of profiles of the lambda 1548 line of C IV containing 51 EUV bursts observed in or near active regions are analyzed to determine the brightness. Doppler shift and line broadening characteristics of the bursts. The bursts have mean lifetimes of approximately 150s, and mean increases in brightness at burst maximum of four-fold as observed with a field of view of 2'' x 20''. Mean burst diameters are estimated to be 3'', or smaller. All but three of the bursts show Doppler shift with velocities sometimes exceeding 75 km s -1 ; 31 are dominated by red shifts and 17 are dominated by blue shifts. Approximately half of the latter group have red-shifted precursors. We interpret the bursts as prominence material, such as surges and coronal rain, moving through the field of view of the spectrometer. (orig.)

  6. Availability analysis of United States BWR IV electrical generation plants

    International Nuclear Information System (INIS)

    Renick, D.H.; Li, F.; Todreas, N.E.

    1998-01-01

    Availability, as quantified by power output levels, from all active U.S. BWR IV plants were analyzed over a seven and a half year period to determine the operational characteristics of these plants throughout an operating cycle. The operational data were examined for infant mortality, end of cycle decreased availability, and seasonal availability variations. Scheduled outages were also examined to determine the industry's current approach to planning maintenance outages. The results of this study show that nuclear power plants do suffer significant infant mortality following a refueling outage. And while they do not suffer an end of cycle decrease in availability, a mid-cycle period of decreased availability is evident. This period of decreased availability is due to a combination of increased forced unavailability and seasonally scheduled maintenance and refueling outages. These findings form the start of a rational approach to increasing plant availability. (author)

  7. Generation-IV nuclear reactors, SFR concept

    International Nuclear Information System (INIS)

    Dufour, P.

    2010-01-01

    In this presentation author deals with development of sodium-cooled fast reactors and lead-cooled fast reactors. He concluded that: - SFR is a proved concept that has never achieved industrial deployment; - The GEN IV objectives need to reconsider the design of both the core and the reactor design : innovations are being analysed; Future design will benefit from considerable feedback of design, licensing, construction and operation of PX, SPX, etc.

  8. Generation IV nuclear plant design strategies

    International Nuclear Information System (INIS)

    Altin, V.

    2007-01-01

    In this presentation Generation IV nuclear reactor design criteria are examined under the light of known nuclear properties of fissile and fertile nuclei. Their conflicting nature is elucidated along with the resulting inevitability of a multitude of designs. The designs selected as candidates for further development are evaluated with respect to their potential to serve the different design criteria, thereby revealing their more difficult aspects of realization and the strong research challenges lying ahead

  9. Genome Sequencing and Analysis Conference IV

    Energy Technology Data Exchange (ETDEWEB)

    1993-12-31

    J. Craig Venter and C. Thomas Caskey co-chaired Genome Sequencing and Analysis Conference IV held at Hilton Head, South Carolina from September 26--30, 1992. Venter opened the conference by noting that approximately 400 researchers from 16 nations were present four times as many participants as at Genome Sequencing Conference I in 1989. Venter also introduced the Data Fair, a new component of the conference allowing exchange and on-site computer analysis of unpublished sequence data.

  10. United Arab Emirates; 2013 Article IV Consultation

    OpenAIRE

    International Monetary Fund

    2013-01-01

    This staff report on United Arab Emirates 2013 Article IV Consultation highlights economic policies and development. Against a backdrop of political stability, confidence has further increased, tourism has been firm, demand from expatriates from the broader region has increased, and capital inflows have strengthened amid high global liquidity. The real estate sector, which had been impaired since the 2009 crisis, has stabilized in Abu Dhabi and has started to recover in Dubai. Dubai aims to b...

  11. Dipyridinium tribromidochloridobis(4-chlorophenylstannate(IV

    Directory of Open Access Journals (Sweden)

    Kong Mun Lo

    2009-06-01

    Full Text Available The tin atom in the substituted ammonium stannate(IV, (C5H6N2[SnBr3(C6H4Cl2Cl], lies on a center of symmetry in a distorted octahedral coordination geometry. Each independent halogen site is occupied by bromine and chlorine anions in an approximate 3:1 ratio. The pyridinium cation forms a hydrogen bond to only one of the halogen atoms.

  12. Structure of tetrakis(salicylaldehydato)thorium(IV)

    Energy Technology Data Exchange (ETDEWEB)

    Hill, R J; Rickard, C E.F. [Auckland Univ. (New Zealand). Dept. of Chemistry

    1977-01-01

    The structure of tetrakis(salicylaldehydato)thorium(IV) has been determined by single crystal X-ray crystallography. The crystals are tetragonal, a = 10.214, b = 23.744 A, space group P4/sub 1/. The molecules are eight coordinate, the coordination polyhedron being a dodecahedron with approximate Dsub(2d) symmetry. The dodecahedral A sites are occupied by the aldehydic oxygens and the phenolic oxygens occupy the B sites.

  13. IVS contribution to the next ITRF

    Science.gov (United States)

    Bachmann, Sabine; Messerschmitt, Linda; Thaller, Daniela

    2015-04-01

    Generating the contribution of the International VLBI Service (IVS) to the next ITRF (ITRF2013 or ITRF2014) was the main task of the IVS Combination Center at the Federal Agency for Cartography and Geodesy (BKG, Germany) in 2014. Starting with the ITRF2005, the IVS contribution to the ITRF is an intra-technique combined solution using multiple individual contributions from different institutions. For the upcoming ITRF ten international institutions submitted data files for a combined solution. The data files contain 24h VLBI sessions from the late 1970s until the end of 2014 in SINEX file format containing datum free normal equations with station coordinates and Earth Orientation Parameters (EOP). All contributions have to meet the IVS standards for ITRF contribution in order to guarantee a consistent combined solution. In the course of the generation of the intra-technique combined solution, station coordinate time series for each station as well as a Terrestrial Reference Frame based on the contributed VLBI data (VTRF) were generated and analyzed. Preliminary results using data until the end of 2013 show a scaling factor of -0.47 ppb resulting from a 7-parameter Helmert transformation of the VTRF w.r.t. ITRF2008, which is comparable to the scaling factor that was determined in the precedent ITRF generation. An internal comparison of the EOPs between the combined solution and the individual contributions as well as external comparisons of the EOP series were carried out in order to assure a consistent quality of the EOPs. The data analyses, the combination procedure and results of the combined solution for station coordinates and EOP will be presented.

  14. Sandia Pulse Reactor-IV Project

    International Nuclear Information System (INIS)

    Reuscher, J.A.

    1983-01-01

    Sandia National Laboratories has developed, designed and operated fast burst reactors for over 20 years. These reactors have been used for a variety of radiation effects programs. During this period, programs have required larger irradiation volumes primarily to expose complex electronic systems to postulated threat environments. As experiment volumes increased, a new reactor was built so that these components could be tested. The Sandia Pulse Reactor-IV is a logical evolution of the two decades of fast burst reactor development at Sandia

  15. Plutonium(IV) hydrous polymer chemistry

    International Nuclear Information System (INIS)

    Toth, L.M.; Dodson, K.E.

    1985-01-01

    The hydrous polymer chemistry of Pu(IV) in aqueous nitric acid solutions has been a subject of considerable interest for several years. This interest stems mainly from the fact that most nuclear fuel reprocessing schemes based on the Purex process can be hampered by the occurrence of polymer. As a result, an understanding and control of the parameters that affect polymer formation during reprocessing are studied. 2 refs

  16. Genome wide identification and expression analysis of Homeodomain leucine zipper subfamily IV (HDZ IV gene family from Musa accuminata

    Directory of Open Access Journals (Sweden)

    Ashutosh ePandey

    2016-02-01

    Full Text Available The homedodomain zipper family (HD-ZIP of transcription factors is present only in plants and plays important role in the regulation of plant-specific processes. The subfamily IV of HDZ transcription factors (HD-ZIP IV has primarily been implicated in the regulation of epidermal structure development. Though this gene family is present in all lineages of land plants, members of this gene family have not been identified in banana, which is one of the major staple fruit crops. In the present work, we identified 21 HDZIV genes in banana by the computational analysis of banana genome resource. Our analysis suggested that these genes putatively encode proteins having all the characteristic domains of HDZIV transcription factors. The phylogenetic analysis of the banana HDZIV family genes further confirmed that after separation from a common ancestor, the banana and poales lineages might have followed distinct evolutionary paths. Further, we conclude that segmental duplication played a major role in the evolution of banana HDZIV genes. All the identified banana HDZIV genes expresses in different banana tissue, however at varying levels. The transcript levels of some of the banana HDZIV genes were also detected in banana fruit pulp, suggesting their putative role in fruit attributes. A large number of genes of this family showed modulated expression under drought and salinity stress. Taken together, the present work lays a foundation for elucidation of functional aspects of the banana HDZIV genes and for their possible use in the banana improvement programs.

  17. Ionizing radiation risk assessment, BEIR IV

    International Nuclear Information System (INIS)

    1991-10-01

    This report of the Subpanel discusses the potential impact on Federal agencies and indicates individual risk factors that could be used by them in risk assessment. The approach used in this CIRRPC report was to consider the risk factors presented in BEIR IV for each radionuclide (or group radioelements) and to make some judgments regarding their validity and/or the uncertainties involved. The coverage of Radon-222 and its progeny dominated the BEIR IV report and this Subpanel felt is was proper to devote more attention to this radionuclide family. This risk factor presented in BEIR IV for radon is 350 cancer deaths per million person-working level months (WLM) of exposure for a lifetime. There is a range of opinions on the conversion from WLM to absorbed dose. As discussed in the text, the use of the WLM concept makes it difficult or infeasible to compare the risk factor for radon with that of other radionuclides which are based on organ dose. This report also includes a discussion of certain fundamental scientific and operational issues that may have decisive effect upon risk factor selection. These adjunct items are dealt with under separate headings and include discussions of threshold dose considerations, extrapolation to low doses, and age at exposure

  18. Electrical and photoelectrical characteristic investigation of a new generation photodiode based on bromothymol blue dye

    International Nuclear Information System (INIS)

    Imer, A Gencer; Korkut, A; Tombak, A

    2016-01-01

    Bromothymol blue (BTB) with the molecular formula of C 27 H 28 Br 2 O 5 S was grown onto p-Si substrate to fabricate heterojunction by spin coating technique. The current voltage ( I-V ) measurements of diode were carried out in dark and under different illumination intensity at room temperature. The photoelectrical properties of heterojunction based on BTB were investigated using the illumination intensity dependent I-V data. The results showed that photo current of diode increases with the increase in light intensity. Also, the electrical parameters of device were determined via I-V, and capacitance- voltage ( C-V ), conductance-voltage ( G-V ) measurements at different frequencies. It is observed that the excess capacitance is created at low frequencies due to the contribution of interface states charge which can follow the alternative current signal to capacitance. It is stated that, both the electrical and photoelectrical parameters of diode can be changed, and also the performance of the device could be affected by the organic thin film interlayer. (paper)

  19. Group IV nanotube transistors for next generation ubiquitous computing

    KAUST Repository

    Fahad, Hossain M.

    2014-06-04

    Evolution in transistor technology from increasingly large power consuming single gate planar devices to energy efficient multiple gate non-planar ultra-narrow (< 20 nm) fins has enhanced the scaling trend to facilitate doubling performance. However, this performance gain happens at the expense of arraying multiple devices (fins) per operation bit, due to their ultra-narrow dimensions (width) originated limited number of charges to induce appreciable amount of drive current. Additionally arraying degrades device off-state leakage and increases short channel characteristics, resulting in reduced chip level energy-efficiency. In this paper, a novel nanotube device (NTFET) topology based on conventional group IV (Si, SiGe) channel materials is discussed. This device utilizes a core/shell dual gate strategy to capitalize on the volume-inversion properties of an ultra-thin (< 10 nm) group IV nanotube channel to minimize leakage and short channel effects while maximizing performance in an area-efficient manner. It is also shown that the NTFET is capable of providing a higher output drive performance per unit chip area than an array of gate-all-around nanowires, while maintaining the leakage and short channel characteristics similar to that of a single gate-all-around nanowire, the latter being the most superior in terms of electrostatic gate control. In the age of big data and the multitude of devices contributing to the internet of things, the NTFET offers a new transistor topology alternative with maximum benefits from performance-energy efficiency-functionality perspective. © (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

  20. Shunt and series resistance of photovoltaic module evaluated from the I-V curve; I-V tokusei kara hyokashita taiyo denchi no shunt teiko to chokuretsu teiko

    Energy Technology Data Exchange (ETDEWEB)

    Asano, K; Kawamura, H; Yamanaka, S; Kawamura, H; Ono, H [Meijo University, Nagoya (Japan)

    1997-11-25

    With an objective of discussing I-V characteristics when a shadow has appeared on part of a photovoltaic module, evaluations were given as a first stage of the study on saturation current, shunt resistance and series resistance for the solar cell module. As a result of measuring change in amount of power generated in a sunny day with a shadow appearing over the solar cell module, reduction in power generation capability of about 23% was verified. In other words, the I-V characteristics of the solar cell module change largely because of existence of the shadow caused on the module. The I-V characteristics curve may be expressed and calculated as a function of the shunt resistance and series resistance. By curve-fitting measurement data for a case of changing insolation without existence of partial shadow, values of the shunt resistance and series resistance were derived. As a result, it was found that the calculations agree well with measurements. It was made also clear that each parameter shows temperature dependence. 6 refs., 10 figs., 1 tab.

  1. Comparison of DSM-IV and DSM-5 criteria for alcohol use disorders in VA primary care patients with frequent heavy drinking enrolled in a trial.

    Science.gov (United States)

    Takahashi, Traci; Lapham, Gwen; Chavez, Laura J; Lee, Amy K; Williams, Emily C; Richards, Julie E; Greenberg, Diane; Rubinsky, Anna; Berger, Douglas; Hawkins, Eric J; Merrill, Joseph O; Bradley, Katharine A

    2017-07-18

    Criteria for alcohol use disorders (AUD) in the Diagnostic and Statistical Manual of Mental Disorders, 5th edition (DSM-5) were intended to result in a similar prevalence of AUD as DSM-IV. We evaluated the prevalence of AUD using DSM-5 and DSM-IV criteria, and compared characteristics of patients who met criteria for: neither DSM-5 nor DSM-IV AUD, DSM-5 alone, DSM-IV alone, or both, among Veterans Administration (VA) outpatients in the Considering Healthier drinking Options In primary CarE (CHOICE) trial. VA primary care patients who reported frequent heavy drinking and enrolled in the CHOICE trial were interviewed at baseline using the DSM-IV Mini International Neuropsychiatric Interview for AUD, as well as questions about socio-demographics, mental health, alcohol craving, and substance use. We compared characteristics across 4 mutually exclusive groups based on DSM-5 and DSM-IV criteria. Of 304 participants, 13.8% met criteria for neither DSM-5 nor DSM-IV AUD; 12.8% met criteria for DSM-5 alone, and 73.0% met criteria for both DSM-IV and DSM-5. Only 1 patient (0.3%) met criteria for DSM-IV AUD alone. Patients meeting both DSM-5 and DSM-IV criteria had more negative drinking consequences, mental health symptoms and self-reported readiness to change compared with those meeting DSM-5 criteria alone or neither DSM-5 nor DSM-IV criteria. In this sample of primary care patients with frequent heavy drinking, DSM-5 identified 13% more patients with AUD than DSM-IV. This group had a lower mental health symptom burden and less self-reported readiness to change compared to those meeting criteria for both DSM-IV and DSM-5 AUD. Trial Registration ClinicalTrials.gov NCT01400581. 2011 February 17.

  2. Revised and extended analysis of Br IV

    International Nuclear Information System (INIS)

    Riyaz, A.; Rahimullah, K.; Tauheed, A.

    2014-01-01

    The spectrum of three-times ionized bromine Br IV has been studied in the 319–2350 Å wavelength region. The spectrum was recorded on a 3-m normal incidence vacuum spectrograph at the St. Francis Xavier University, Antigonish (Canada) and 6.65-m grazing incidence spectrograph at the Zeeman laboratory (Amsterdam). The light sources used were a triggered spark and sliding spark, respectively. The ground configuration of Br IV 3d 10 4s 2 4p 2 , the excited configurations 3d 10 4s4p 3 +3d 10 4s 2 4p (4d+5d+6d+5s+6s+7s) in the odd parity system and 3d 10 4s 2 4p (5p+4f+5f)+3d 10 4s4p 2 (4d+5s)+3d 10 4p 4 in the even parity system have been studied. Relativistic Hartree–Fock (HFR) and least squares fitted (LSF) parametric calculations were used to interpret the observed spectrum. 120 Levels of Br IV have now been established, 58 being new. Among 424 spectral lines, 277 are newly classified. The levels 4s4p 35 S 2 , 4s 2 4p4d 3 F 4 and 4p5p ( 3 P 0,1 , 3 D 1,2 , 3 S 1 ) are revised. We estimate the accuracy of our measured wavelength for sharp and unblended lines to be ±0.005 Å. The ionization limit is determined as 385,390±100 cm −1 (47.782±0.012 eV). -- Highlights: • The spectrum of Br was recorded on a 3-m spectrograph with triggered spark source. • Atomic transitions for Br IV were identified to established new energy levels. • CI calculations with relativistic corrections were made for theoretical predictions. • Weighted oscillator strength (gf) and transition probabilities (gA) were calculated. • Ionization potential of Br IV was determined experimentally

  3. Clinical application of antenatal genetic diagnosis of osteogenesis imperfecta type IV.

    Science.gov (United States)

    Yuan, Jing; Li, Song; Xu, YeYe; Cong, Lin

    2015-04-02

    Clinical analysis and genetic testing of a family with osteogenesis imperfecta type IV were conducted, aiming to discuss antenatal genetic diagnosis of osteogenesis imperfecta type IV. Preliminary genotyping was performed based on clinical characteristics of the family members and then high-throughput sequencing was applied to rapidly and accurately detect the changes in candidate genes. Genetic testing of the III5 fetus and other family members revealed missense mutation in c.2746G>A, pGly916Arg in COL1A2 gene coding region and missense and synonymous mutation in COL1A1 gene coding region. Application of antenatal genetic diagnosis provides fast and accurate genetic counseling and eugenics suggestions for patients with osteogenesis imperfecta type IV and their families.

  4. Synthesis and evaluation of artificial antigens for astragaloside IV

    Directory of Open Access Journals (Sweden)

    Sheng-lan Yu

    Full Text Available The objective of this study was to produce artificial antigens for astragaloside IV that could be used to prepare antibodies against astragaloside IV screened in Radix astragali (Astragalus membranaceus (Fisch Bunge, Fabaceae and its preparations, using an indirect ELISA. Astragaloside IV was coupled to carrier proteins, bovine serum albumin and ovalbumin using the sodium periodate method and was then evaluated using SDS-PAGE, MALDI-TOF MS and animal immunizations. The coupling ratio of astragaloside IV to bovine serum albumin ratio was determined to be thirteen, and the indirect ELISA demonstrated that three groups of mice immunized with astragaloside IV-bovine serum albumin produced anti-astragaloside IV- bovine serum albumin-specific antibody, with a minimum serum titer of 1:9600. A method for synthesizing highly immunogenic astragaloside IV artificial antigens was successfully developed thus indicating its feasibility in the establishment of a fast immunoassay for astragaloside IV content determination in Radix astragali and its products.

  5. Predictive power of the DASA-IV: Variations in rating method and timescales.

    Science.gov (United States)

    Nqwaku, Mphindisi; Draycott, Simon; Aldridge-Waddon, Luke; Bush, Emma-Louise; Tsirimokou, Alexandra; Jones, Dominic; Puzzo, Ignazio

    2018-05-10

    This project evaluated the predictive validity of the Dynamic Appraisal of Situational Aggression - Inpatient Version (DASA-IV) in a high-secure psychiatric hospital in the UK over 24 hours and over a single nursing shift. DASA-IV scores from three sequential nursing shifts over a 24-hour period were compared with the mean (average of three scores across the 24-hour period) and peak (highest of the three scores across the 24-hour period) scores across these shifts. In addition, scores from a single nursing shift were used to predict aggressive incidents over each of the following three shifts. The DASA-IV was completed by nursing staff during handover meetings, rating 43 male psychiatric inpatients over a period of 6 months. Data were compared to incident reports recorded over the same period. Receiver operating characteristic (ROC) curves and generalized estimating equations assessed the predictive ability of various DASA-IV scores over 24-hour and single-shift timescales. Scores from the DASA-IV based on a single shift had moderate predictive ability for aggressive incidents occurring the next calendar day, whereas scores based on all three shifts had excellent predictive ability. DASA-IV scores from a single shift showed moderate predictive ability for each of the following three shifts. The DASA-IV has excellent predictive ability for aggressive incidents within a secure setting when data are summarized over a 24-hour period, as opposed to when a single rating is taken. In addition, it has moderate value for predicting incidents over even shorter timescales. © 2018 Australian College of Mental Health Nurses Inc.

  6. A Si IV/O IV Electron Density Diagnostic for the Analysis of IRIS Solar Spectra

    Science.gov (United States)

    Young, P. R.; Keenan, F. P.; Milligan, R. O.; Peter, H.

    2018-04-01

    Solar spectra of ultraviolet bursts and flare ribbons from the Interface Region Imaging Spectrograph (IRIS) have suggested high electron densities of > {10}12 cm‑3 at transition region temperatures of 0.1 MK, based on large intensity ratios of Si IV λ1402.77 to O IV λ1401.16. In this work, a rare observation of the weak O IV λ1343.51 line is reported from an X-class flare that peaked at 21:41 UT on 2014 October 24. This line is used to develop a theoretical prediction of the Si IV λ1402.77 to O IV λ1401.16 ratio as a function of density that is recommended to be used in the high-density regime. The method makes use of new pressure-dependent ionization fractions that take account of the suppression of dielectronic recombination at high densities. It is applied to two sequences of flare kernel observations from the October 24 flare. The first shows densities that vary between 3× {10}12 and 3× {10}13 cm‑3 over a seven-minute period, while the second location shows stable density values of around 2× {10}12 cm‑3 over a three-minute period.

  7. Collagen type IV at the fetal-maternal interface

    OpenAIRE

    Oefner, C M; Sharkey, A; Gardner, L; Critchley, H; Oyen, M; Moffett, A

    2015-01-01

    Introduction Extracellular matrix proteins play a crucial role in influencing the invasion of trophoblast cells. However the role of collagens and collagen type IV (col-IV) in particular at the implantation site is not clear. Methods Immunohistochemistry was used to determine the distribution of collagen types I, III, IV and VI in endometrium and decidua during the menstrual cycle and the first trimester of pregnancy. Expression of col-IV alpha chains during the reproductive cycle ...

  8. Synthesis of novel carbazole derived substances using some organoboron compounds by palladium catalyzed and investigation of its semiconductor device characteristics

    Science.gov (United States)

    Gorgun, Kamuran; Caglar, Yasemin

    2018-04-01

    Carbazole compounds in particular represent one of the most intensely used and studied class of semiconducting materials. In this study, considering the information given in the literature the Ullman and Suzuki-Miyaura coupling reaction were carried out using carbazole, 1,4-dibromobenzene and pyrene-1-boronic acid. The synthesized carbazole derivatives are characterized by 1H NMR and elemental analysis. The spectroscopic and thermal properties of the synthesized novel carbazole derivative 9-(4-(pyren-4-yl)phenyl)-9H-carbazole (Cz-py) were investigated. And also, the n-Si/p-Cz:py heterojunction diode was fabricated. The electrical properties of this diode were characterized by current-voltage (I-V) and capacitance-voltage (C-V) measurements.

  9. Contribution to the study of mechanisms of oxidation of uranium (IV) in solution

    International Nuclear Information System (INIS)

    Michaille, Patrick

    1977-01-01

    In the first part, the author reports a bibliographical study which aims at briefly describing the main parameters which govern redox kinetics between metallic ions in solution: acidity, complexing reaction by anions, solvent effects. The author also highlights existing contradictions and shortcomings in the interpretation of experimental results as well as in current theories, and highlights characteristics proper to uranium (IV). The author then describes results obtained for kinetics of Ce(IV)-U(IV) systems: effects of acidity, of sulphate, search for other anionic and cationic catalysts, influence of fluoride, inhibition by DMSO). Some of these results (influence of fluoride and DMSO) are compared with those obtained with the Ce(IV)-Fe(II) system. A more detailed study of the solvent role has been performed for the U(IV)-Fe(III) system in a mixed water-ethylene glycol medium and in pure glycol. The next part addresses the modifications of flow stopped spectrophotometry to solve problems of corrosion and bad temperature regulation. The author presents analog (kinetics) and digital (complexing equilibrium) calculation methods, and the development of colour indicators of temperature [fr

  10. A spectrophotometric study of cerium IV and chromium VI species in nuclear fuel reprocessing process streams

    International Nuclear Information System (INIS)

    Nickson, I D; Boxall, C; Jackson, A; Whillock, G O H

    2010-01-01

    Nuclear fuel reprocessing schemes such as PUREX and UREX utilise HNO 3 media. An understanding of the corrosion of process engineering materials such as stainless steel in such media is a major concern for the nuclear industry. Two key species are cerium and chromium which, as Ce(IV), Cr(VI), may act as corrosion accelerants. An on-line analytical technique for these quantities would be useful for determining the relationship between corrosion rate and [Ce(IV)] and [Cr(VI)]. Consequently, a strategy for simultaneous quantification of Ce(IV), Cr(VI) and Cr(III) in the presence of other ions found in average burn-up Magnox / PWR fuel reprocessing stream (Fe, Mg, Nd, Al) is being developed. This involves simultaneous UV-vis absorbance measurement at 620, 540, 450 nm, wavelengths where Ce and Cr absorb but other ions do not. Mixed solutions of Cr(VI) and Ce(IV) are found to present higher absorbance values at 540 nm than those predicted from absorbances recorded from single component solutions of those ions. This is attributed to the formation of a 3:1 Cr(VI)-Ce(IV) complex and we report on the complexation and UV-visible spectrophotometric characteristics of this species. To the best of our knowledge this is the first experimental study of this complex in aqueous nitric acid solution systems.

  11. Indicators of suboptimal performance embedded in the Wechsler Memory Scale-Fourth Edition (WMS-IV).

    Science.gov (United States)

    Bouman, Zita; Hendriks, Marc P H; Schmand, Ben A; Kessels, Roy P C; Aldenkamp, Albert P

    2016-01-01

    Recognition and visual working memory tasks from the Wechsler Memory Scale-Fourth Edition (WMS-IV) have previously been documented as useful indicators for suboptimal performance. The present study examined the clinical utility of the Dutch version of the WMS-IV (WMS-IV-NL) for the identification of suboptimal performance using an analogue study design. The patient group consisted of 59 mixed-etiology patients; the experimental malingerers were 50 healthy individuals who were asked to simulate cognitive impairment as a result of a traumatic brain injury; the last group consisted of 50 healthy controls who were instructed to put forth full effort. Experimental malingerers performed significantly lower on all WMS-IV-NL tasks than did the patients and healthy controls. A binary logistic regression analysis was performed on the experimental malingerers and the patients. The first model contained the visual working memory subtests (Spatial Addition and Symbol Span) and the recognition tasks of the following subtests: Logical Memory, Verbal Paired Associates, Designs, Visual Reproduction. The results showed an overall classification rate of 78.4%, and only Spatial Addition explained a significant amount of variation (p < .001). Subsequent logistic regression analysis and receiver operating characteristic (ROC) analysis supported the discriminatory power of the subtest Spatial Addition. A scaled score cutoff of <4 produced 93% specificity and 52% sensitivity for detection of suboptimal performance. The WMS-IV-NL Spatial Addition subtest may provide clinically useful information for the detection of suboptimal performance.

  12. On the role of Mn(IV) vacancies in the photoreductive dissolution of hexagonal birnessite

    Energy Technology Data Exchange (ETDEWEB)

    Kwon, K.D.; Refson, K.; Sposito, G.

    2009-06-01

    Photoreductive dissolution of layer type Mn(IV) oxides (birnessite) under sunlight illumination to form soluble Mn(II) has been observed in both field and laboratory settings, leading to a consensus that this process is a key driver of the biogeochemical cycling of Mn in the euphotic zones of marine and freshwater ecosystems. However, the underlying mechanisms for the process remain unknown, although they have been linked to the semiconducting characteristics of hexagonal birnessite, the ubiquitous Mn(IV) oxide produced mainly by bacterial oxidation of soluble Mn(II). One of the universal properties of this biogenic mineral is the presence of Mn(IV) vacancies, long-identified as strong adsorption sites for metal cations. In this paper, the possible role of Mn vacancies in photoreductive dissolution is investigated theoretically using quantum mechanical calculations based on spin-polarized density functional theory (DFT). Our DFT study demonstrates unequivocally that Mn vacancies significantly reduce the band-gap energy for hexagonal birnessite relative to a hypothetical vacancy-free MnO{sub 2} and thus would increase the concentration of photo-induced electrons available for Mn(IV) reduction upon illumination of the mineral by sunlight. Calculations of the charge distribution in the presence of vacancies, although not fully conclusive, show a clear separation of photo-induced electrons and holes, implying a slow recombination of these charge-carriers that facilitates the two-electron reduction of Mn(IV) to Mn(II).

  13. Dipeptidyl peptidase IV inhibitory activity of protein hydrolyzates ...

    African Journals Online (AJOL)

    Background: Type 2 diabetes is a chronic metabolic disorder. Recently, dipeptidyl peptidase IV (DPP-IV) inhibitors that protect incretin hormones from being cleaved by DPP-IV have been used as drugs to control glycemia. This study examined the potential hypoglycemic effect of amaranth grain storage protein hydrolyzates ...

  14. 77 FR 64398 - Order of Succession for HUD Region IV

    Science.gov (United States)

    2012-10-19

    ... Region IV AGENCY: Office of Field Policy and Management, HUD. ACTION: Notice of Order of Succession... Field Offices (Region IV). This Order of Succession supersedes all previous Orders of Succession for HUD Region IV. DATES: Effective Date: October 9, 2012. FOR FURTHER INFORMATION CONTACT: Lawrence D. Reynolds...

  15. Revised and extended analysis of Br IV

    Science.gov (United States)

    Riyaz, A.; Rahimullah, K.; Tauheed, A.

    2014-01-01

    The spectrum of three-times ionized bromine Br IV has been studied in the 319-2350 Å wavelength region. The spectrum was recorded on a 3-m normal incidence vacuum spectrograph at the St. Francis Xavier University, Antigonish (Canada) and 6.65-m grazing incidence spectrograph at the Zeeman laboratory (Amsterdam). The light sources used were a triggered spark and sliding spark, respectively. The ground configuration of Br IV 3d104s24p2, the excited configurations 3d104s4p3+3d104s24p (4d+5d+6d+5s+6s+7s) in the odd parity system and 3d104s24p (5p+4f+5f)+3d104s4p2 (4d+5s)+3d104p4 in the even parity system have been studied. Relativistic Hartree-Fock (HFR) and least squares fitted (LSF) parametric calculations were used to interpret the observed spectrum. 120 Levels of Br IV have now been established, 58 being new. Among 424 spectral lines, 277 are newly classified. The levels 4s4p35S2, 4s24p4d 3F4 and 4p5p (3P0, 1, 3D1, 2, 3S1) are revised. We estimate the accuracy of our measured wavelength for sharp and unblended lines to be ±0.005 Å. The ionization limit is determined as 385,390±100 cm-1 (47.782±0.012 eV).

  16. Mesoscopic kinetic Monte Carlo modeling of organic photovoltaic device characteristics

    Science.gov (United States)

    Kimber, Robin G. E.; Wright, Edward N.; O'Kane, Simon E. J.; Walker, Alison B.; Blakesley, James C.

    2012-12-01

    Measured mobility and current-voltage characteristics of single layer and photovoltaic (PV) devices composed of poly{9,9-dioctylfluorene-co-bis[N,N'-(4-butylphenyl)]bis(N,N'-phenyl-1,4-phenylene)diamine} (PFB) and poly(9,9-dioctylfluorene-co-benzothiadiazole) (F8BT) have been reproduced by a mesoscopic model employing the kinetic Monte Carlo (KMC) approach. Our aim is to show how to avoid the uncertainties common in electrical transport models arising from the need to fit a large number of parameters when little information is available, for example, a single current-voltage curve. Here, simulation parameters are derived from a series of measurements using a self-consistent “building-blocks” approach, starting from data on the simplest systems. We found that site energies show disorder and that correlations in the site energies and a distribution of deep traps must be included in order to reproduce measured charge mobility-field curves at low charge densities in bulk PFB and F8BT. The parameter set from the mobility-field curves reproduces the unipolar current in single layers of PFB and F8BT and allows us to deduce charge injection barriers. Finally, by combining these disorder descriptions and injection barriers with an optical model, the external quantum efficiency and current densities of blend and bilayer organic PV devices can be successfully reproduced across a voltage range encompassing reverse and forward bias, with the recombination rate the only parameter to be fitted, found to be 1×107 s-1. These findings demonstrate an approach that removes some of the arbitrariness present in transport models of organic devices, which validates the KMC as an accurate description of organic optoelectronic systems, and provides information on the microscopic origins of the device behavior.

  17. Synthesis and characterization of thorium(IV) and uranium(IV) complexes with Schiff bases

    Energy Technology Data Exchange (ETDEWEB)

    Radoske, Thomas; Maerz, Juliane; Kaden, Peter; Patzschke, Michael; Ikeda-Ohno, Atsushi [Helmholtz-Zentrum Dresden-Rossendorf e.V., Dresden (Germany). Chemistry of the F-Elements

    2017-06-01

    We report herein the synthesis and characterization of several imine complexes of tetravalent thorium (Th(IV)) and uranium (U(IV)). The ligands investigated in this study are a Schiff base type, including the well-known salen ligand (H{sub 2}Le, Fig. 1). The complexation in solution was investigated by NMR measurements indicating paramagnetic effects of unpaired f-electrons of U(IV) on the ligand molecule. We also determined the solid-state molecular structures of the synthesized complexes by single crystal X-ray diffraction. The synthesized complexes show an eight-fold coordination geometry around the actinide center surrounded by two tetradentate ligands with 2N- and 2O-donor atoms.

  18. The kinetics of the cerium(IV)-uranium(IV) reaction at low sulfate concentrations

    International Nuclear Information System (INIS)

    Michaille, P.; Kikindai, T.

    1977-01-01

    The rate of oxidation of uranium(IV) by cerium(IV) was measured with a stopped-flow spectrophotometer at sulfuric acid concentrations of 2 x 10 -6 to 0.5 M. At a constant hydrogen ion concentration of 0.5 M, the maximum rate constant was observed for 2 x 10 -3 M sulfuric acid; at that concentration, two sulfate ions were involved in the activated complex. The dependence of the rate constant on the hydrogen ion concentration showed that the reaction paths involving one or two sulfate ions also involved one hydroxyl ion, whereas one hydrogen ion was involved in the five sulfate dependent path. Spectrophotometric measurements supported the existence of a hydrolyzed monosulfatocomplex of cerium(IV). (author)

  19. Thorium(IV) and zirconium(IV) complexes of oxygen donor ligands. Pt. 12

    International Nuclear Information System (INIS)

    Agarwal, R.K.; Jain, P.C.; Kapur, V.; Sharma, S.; Srivastava, A.K.

    1980-01-01

    Crystalline thorium (IV) chelates with mono N-oxides of 2,2'-bipyridine (bipyNO) and 1,10-phenanthroline (phenNO), ThX 4 x 2L(X = Cl,Br,NO 3 or NCS) and ThX 4 x 3L(X = I or ClO 4 and L = bipyNO or phenNO) have been synthesised and characterized on the basis of i.r. spectra, molar conductance, molecular weights, t.g.a. and d.t.a. data. All the complexes are weakly diamagnetic and contain bipyNO and phenNO bonded to thorium(IV) through nitrogen and oxygen. The coordination number of thorium(IV) varies from six to twelve depending on the nature of the anions. (orig.) [de

  20. Gen IV Materials Handbook Functionalities and Operation

    International Nuclear Information System (INIS)

    Ren, Weiju

    2009-01-01

    This document is prepared for navigation and operation of the Gen IV Materials Handbook, with architecture description and new user access initiation instructions. Development rationale and history of the Handbook is summarized. The major development aspects, architecture, and design principles of the Handbook are briefly introduced to provide an overview of its past evolution and future prospects. Detailed instructions are given with examples for navigating the constructed Handbook components and using the main functionalities. Procedures are provided in a step-by-step fashion for Data Upload Managers to upload reports and data files, as well as for new users to initiate Handbook access.

  1. General report of Technical Committee IV

    International Nuclear Information System (INIS)

    Feinendegen, L.E.

    1979-01-01

    During the report period, work in section IV of the Committee was continued on the molecular, cellular and organic levels with the aim to elucidate the origin, course and treatment possibility of the syndrome that may occur in the mammalian organism upon acute and chronic ionizing irradiation as a function of the radiation dose received. The investigations dealt a.o. with the effect of O 2 in protein radiolysis, recovery processes of the haematopoietic stem cells, delayed effects in the gastrointestical tract subsequent to local irradiation, and combination damage in the lungs and liver of rats upon combined cytostatic and radiation therapy. (orig./HP) [de

  2. Research in collegiate mathematics education IV

    CERN Document Server

    Dubinsky, Ed; Kaput, Jim

    2001-01-01

    This fourth volume of Research in Collegiate Mathematics Education (RCME IV) reflects the themes of student learning and calculus. Included are overviews of calculus reform in France and in the U.S. and large-scale and small-scale longitudinal comparisons of students enrolled in first-year reform courses and in traditional courses. The work continues with detailed studies relating students' understanding of calculus and associated topics. Direct focus is then placed on instruction and student comprehension of courses other than calculus, namely abstract algebra and number theory. The volume co

  3. A Gaussian IV estimator of cointegrating relations

    DEFF Research Database (Denmark)

    Bårdsen, Gunnar; Haldrup, Niels

    2006-01-01

    In static single equation cointegration regression modelsthe OLS estimator will have a non-standard distribution unless regressors arestrictly exogenous. In the literature a number of estimators have been suggestedto deal with this problem, especially by the use of semi-nonparametricestimators. T......In static single equation cointegration regression modelsthe OLS estimator will have a non-standard distribution unless regressors arestrictly exogenous. In the literature a number of estimators have been suggestedto deal with this problem, especially by the use of semi...... in cointegrating regressions. These instruments are almost idealand simulations show that the IV estimator using such instruments alleviatethe endogeneity problem extremely well in both finite and large samples....

  4. New Materials for NGNP/Gen IV

    International Nuclear Information System (INIS)

    Swindeman, Robert W.; Marriott, Douglas L.

    2009-01-01

    The bounding conditions were briefly summarized for the Next Generation Nuclear Plant (NGNP) that is the leading candidate in the Department of Energy Generation IV reactor program. Metallic materials essential to the successful development and proof of concept for the NGNP were identified. The literature bearing on the materials technology for high-temperature gas-cooled reactors was reviewed with emphasis on the needs identified for the NGNP. Several materials were identified for a more thorough study of their databases and behavioral features relative to the requirements ASME Boiler and Pressure Vessel Code, Section III, Division 1, Subsection NH.

  5. Gen IV Materials Handbook Functionalities and Operation

    Energy Technology Data Exchange (ETDEWEB)

    Ren, Weiju [ORNL

    2009-12-01

    This document is prepared for navigation and operation of the Gen IV Materials Handbook, with architecture description and new user access initiation instructions. Development rationale and history of the Handbook is summarized. The major development aspects, architecture, and design principles of the Handbook are briefly introduced to provide an overview of its past evolution and future prospects. Detailed instructions are given with examples for navigating the constructed Handbook components and using the main functionalities. Procedures are provided in a step-by-step fashion for Data Upload Managers to upload reports and data files, as well as for new users to initiate Handbook access.

  6. Topological characterisation and identification of critical domains within glucosyltransferase IV (GtrIV of Shigella flexneri

    Directory of Open Access Journals (Sweden)

    Nair Anesh

    2011-12-01

    Full Text Available Abstract Background The three bacteriophage genes gtrA, gtrB and gtr(type are responsible for O-antigen glucosylation in Shigella flexneri. Both gtrA and gtrB have been demonstrated to be highly conserved and interchangeable among serotypes while gtr(type was found to be specific to each serotype, leading to the hypothesis that the Gtr(type proteins are responsible for attaching glucosyl groups to the O-antigen in a site- and serotype- specific manner. Based on the confirmed topologies of GtrI, GtrII and GtrV, such interaction and attachment of the glucosyl groups to the O-antigen has been postulated to occur in the periplasm. Results In this study, the topology of GtrIV was experimentally determined by creating different fusions between GtrIV and a dual-reporter protein, PhoA/LacZ. This study shows that GtrIV consists of 8 transmembrane helices, 2 large periplasmic loops, 2 small cytoplasmic N- and C- terminal ends and a re-entrant loop that occurs between transmembrane helices III and IV. Though this topology differs from that of GtrI, GtrII, GtrV and GtrX, it is very similar to that of GtrIc. Furthermore, both the N-terminal periplasmic and the C-terminal periplasmic loops are important for GtrIV function as shown via a series of loop deletion experiments and the creation of chimeric proteins between GtrIV and its closest structural homologue, GtrIc. Conclusion The current study provides the basis for elucidating the structure and mechanism of action of this important O-antigen modifying glucosyltransferase.

  7. On the stabilization of NbV-solutions by ZrIV and HfIV

    International Nuclear Information System (INIS)

    Soerensen, E.; Bjerre, A.B.

    1987-11-01

    Niobium cannot be separated from zirconium or hafnium when these elements occur together in solution with common anions such as Cl- and SO 4 --. This is ascribed to the copolymerisation of Nb v and the hydrolyzed ionic species of Zr IV v and Hf IV by which the colloidal particles are masked as Zr- and Hf-compounds. In HCl the particles are positively charged as opposed to when they are in sulphate solution where the Zr- and Hf- sulphate complexes confer a negative charge. The two cases are considered separately. (author)

  8. Spectroscopy study of ceramic pigments based on Ce(IV)-Pr(IV) oxide

    International Nuclear Information System (INIS)

    Furtado, L.; Toma, H.E.

    1991-01-01

    The synthesis and spectroscopic properties of a series of cerium(IV)-praseodimium(IV) oxide pigments are reported. The pigments exhibit brick-red colours and are suitable for ceramic applications because of their high temperature stability. Electronic absorption spectra of the pigments suspended in a gel matrix of polyvinyl alcohol-sodium tetradecaborate mixture, consists of broad band with gaussian components at 372 and 472nm. These bands are described to charge -transfer transitions from the occupied oxygen p-orbitals to the empty f levels of the lanthanides. (author)

  9. Performance evaluation study of IHX-IV seal assembly

    Energy Technology Data Exchange (ETDEWEB)

    Padmakumar, G.; Venkatramanan, J.; Balasubramanian, V.; Prakash, V.; Vaidyanathan, G. [Indira Gandhi Centre for Atomic Research, Kalpakkam - 603102 (India); Konnur, M.S.; Ram Mohan, S.; Suresh, M.; Manikandan, S.; Rajesh, V. [Fluid Control Research Institute, Palakkad - 678 623 (India)

    2005-07-01

    Full text of publication follows: The construction of the 500 MWe Prototype Fast Breeder Reactor (PFBR) has commenced at IGCAR, Kalpakkam. PFBR has four intermediate Heat Exchangers (IHX) and two primary Sodium Pumps. The secondary circuits consist of two loops with each loop having one secondary pump, two intermediate heat exchangers, one surge tank and four steam generators. Primary circuit has both hot and cold sodium and is separated into hot and cold pools by Inner Vessel(IV). IHX forms the interface between the primary circuit and secondary circuit of PFBR. The IHX and pumps are supported from at the top in the roof slab and penetrate through the conical portion of inner vessel. Proper sealing arrangements are necessary to prevent leakage of hot sodium into the cold pool through the penetration. The Mechanical Seal is employed to minimize the leakage through the penetration. This seal arrangement can facilitate Differential radial and thermal expansion between IHX and IV stand pipe at the region of penetration Relative tilting between the axis of IHX and IV stand pipe Smooth installation during commissioning and easy removal during maintenance Minimizes the forces transmitted to IV The hydraulic simulation study, of the IHX - IV mechanical seal assembly was undertaken at the Fluid Control Research Institute, Palghat. The seal has two leakage paths viz. Axial and radial. The leakage depends on the contact pressure on the sealing surface and the head causing the leakage. High leakage flow may lead to damage of inner vessel and may affect the thermal efficiency of the IHX. CFD analysis of the geometry was done in detail. This was done for prototype and the model condition. The optimized design obtained using CFD was employed for experimental evaluation. In the experimental set up, the leakage characteristics was studied for varying axial and radial clearance that prevails during the various stages of operation of the seal assembly in the reactor. A 1/2 scaled

  10. After SDSS-IV: Pioneering Panoptic Spectroscopy

    Science.gov (United States)

    Kollmeier, Juna; AS4 Collaboration

    2018-01-01

    I will describe the current plans for a next generation sky survey that will begin After SDSS-IV --- AS4. AS4 will be an unprecedented all-sky spectroscopic survey of over six million objects. It is designed to decode the history of the Milky Way galaxy, trace the emergence of the chemical elements, reveal the inner workings of stars, the growth of black holes, and investigate the origin of planets. It will provide the most comprehensive all-sky spectroscopy to multiply the science from the Gaia, TESS and eROSITA missions. AS4 will also create a contiguous spectroscopic map of the interstellar gas in the Milky Way and nearby galaxies that is 1,000 times larger than the state of the art, uncovering the self-regulation mechanisms of Galactic ecosystems. It will pioneer systematic, spectroscopic monitoring across the whole sky, revealing changes on timescales from 20 minutes to 20 years. The project is now developing new hardware to build on the SDSS-IV infrastructure, designing the detailed survey strategy, and actively seeking to complete its consortium of institutional and individual members.

  11. Development of generation IV nuclear energy systems

    International Nuclear Information System (INIS)

    Matsui, Kazuaki; Oka, Yoshiaki; Ogawa, Masuro; Ichimiya, Masakazu; Noda, Hiroshi

    2003-01-01

    The fifth 'Generation IV International Forum (GIF), Policy Group Meetings' was held at the Zen-Nikku Hotel in Tokyo, on September 19-20, 2002, under participations of Abraham, Secretary of DOE in U.S.A., Columbani, Secretary of CEA in France, Fujiie, Chairman of CAE in Japan, Kano, Parliamental Minister of MIS in Japan, and so on. Ten nations entering GIF (Argentina, Brazil, Canada, France, Japan, Korea, South Africa, Switzerland, U.K., and U.S.A.) selected six next generation nuclear energy concepts for objects of international cooperative research and development aiming at its practice by 2030. These concepts applicable to not only power generation, but also hydrogen production, sea water purification, and so on, are sodium liquid metal cooled reactor (Japan), high temperature gas cooled reactor (France), Super-critical pressure water cooled reactor (SCWR: Canada), Lead metal cooled reactor (Switzerland), Gas cooled fast reactor (U.S.A.), and molten salts reactor. On the generation IV nuclear reactor systems aiming to further upgrade their sustainability, safety, economical efficiency, and nuclear non proliferation, the 'Plans on Technical Development' (Road-map) to decide priority of their R and Ds has been cooperatively discussed under frameworks of international research cooperation by the GIF members nations. Here were shared descriptions on nuclear fuel cycle as a remise of technical evaluation and adopted concepts by Japanese participants contributing to making up the Road-map. (G.K.)

  12. Fluidized bed nuclear reactor as a IV generation reactor

    International Nuclear Information System (INIS)

    Sefidvash, Farhang

    2002-01-01

    The object of this paper is to analyze the characteristics of the Fluidized Bed Nuclear Reactor (FBNR) concept under the light of the requirements set for the IV generation nuclear reactors. It is seen that FBNR generally meets the goals of providing sustainable energy generation that meets clean air objectives and promotes long-term availability of systems and effective fuel utilization for worldwide energy production; minimize and manage their nuclear waste and notably reduce the long term stewardship burden in the future, thereby improving protection for the public health and the environment; increase the assurance that it is a very unattractive and least desirable route for diversion or theft of weapons-usable materials; excel in safety and reliability; have a very low likelihood and degree of reactor core damage; eliminate the need for offsite emergency response; have a clear life-cycle cost advantage over other energy sources; have a level of financial risk comparable to other energy projects. The other advantages of the proposed design are being modular, low environmental impact, exclusion of severe accidents, short construction period, flexible adaptation to demand, excellent load following characteristics, and competitive economics. (author)

  13. Predicting DPP-IV inhibitors with machine learning approaches

    Science.gov (United States)

    Cai, Jie; Li, Chanjuan; Liu, Zhihong; Du, Jiewen; Ye, Jiming; Gu, Qiong; Xu, Jun

    2017-04-01

    Dipeptidyl peptidase IV (DPP-IV) is a promising Type 2 diabetes mellitus (T2DM) drug target. DPP-IV inhibitors prolong the action of glucagon-like peptide-1 (GLP-1) and gastric inhibitory peptide (GIP), improve glucose homeostasis without weight gain, edema, and hypoglycemia. However, the marketed DPP-IV inhibitors have adverse effects such as nasopharyngitis, headache, nausea, hypersensitivity, skin reactions and pancreatitis. Therefore, it is still expected for novel DPP-IV inhibitors with minimal adverse effects. The scaffolds of existing DPP-IV inhibitors are structurally diversified. This makes it difficult to build virtual screening models based upon the known DPP-IV inhibitor libraries using conventional QSAR approaches. In this paper, we report a new strategy to predict DPP-IV inhibitors with machine learning approaches involving naïve Bayesian (NB) and recursive partitioning (RP) methods. We built 247 machine learning models based on 1307 known DPP-IV inhibitors with optimized molecular properties and topological fingerprints as descriptors. The overall predictive accuracies of the optimized models were greater than 80%. An external test set, composed of 65 recently reported compounds, was employed to validate the optimized models. The results demonstrated that both NB and RP models have a good predictive ability based on different combinations of descriptors. Twenty "good" and twenty "bad" structural fragments for DPP-IV inhibitors can also be derived from these models for inspiring the new DPP-IV inhibitor scaffold design.

  14. Report for 2011 from the Bordeaux IVS Analysis Center

    Science.gov (United States)

    Charlot, Patrick; Bellanger, Antoine; Bourda, Geraldine; Collioud, Arnaud; Baudry, Alain

    2012-01-01

    This report summarizes the activities of the Bordeaux IVS Analysis Center during the year 2011. The work focused on (i) regular analysis of the IVS-R1 and IVS-R4 sessions with the GINS software package; (ii) systematic VLBI imaging of the RDV sessions and calculation of the corresponding source structure index and compactness values; (iii) imaging of the sources observed during the 2009 International Year of Astronomy IVS observing session; and (iv) continuation of our VLBI observational program to identify optically-bright radio sources suitable for the link with the future Gaia frame. Also of importance is the enhancement of the IVS LiveWeb site which now comprises all IVS sessions back to 2003, allowing one to search past observations for session-specific information (e.g. sources or stations).

  15. A proteomics panel for predicting optimal primary cytoreduction in stage III/IV ovarian cancer

    DEFF Research Database (Denmark)

    Risum, Signe; Høgdall, Estrid; Engelholm, Svend A

    2009-01-01

    for CA-125. In addition, serum was analyzed for 7 biomarkers using surface-enhanced laser desorption/ionization time-of-flight mass spectrometry. These biomarkers were combined into a single-valued ovarian-cancer-risk index (OvaRI). CA-125 and OvaRI were evaluated as predictors of cytoreduction in 75......The objective of this prospective study was to evaluate CA-125 and a 7-marker panel as predictors of incomplete primary cytoreduction in patients with stage III/IV ovarian cancer (OC). From September 2004 to January 2008, serum from 201 patients referred to surgery for a pelvic tumor was analyzed...... stage III/IV patients using receiver operating characteristic curves. Complete primary cytoreduction (no macroscopic residual disease) was achieved in 31% (23/75) of the patients. The area under the receiver operating characteristic curve was 0.66 for CA-125 and 0.75 for OvaRI. The sensitivity...

  16. Comparative Analysis of Inpatient Costs for Obstetrics and Gynecology Surgery Patients Treated With IV Acetaminophen and IV Opioids Versus IV Opioid-only Analgesia for Postoperative Pain.

    Science.gov (United States)

    Hansen, Ryan N; Pham, An T; Lovelace, Belinda; Balaban, Stela; Wan, George J

    2017-10-01

    Recovery from obstetrics and gynecology (OB/GYN) surgery, including hysterectomy and cesarean section delivery, aims to restore function while minimizing hospital length of stay (LOS) and medical expenditures. Our analyses compare OB/GYN surgery patients who received combination intravenous (IV) acetaminophen and IV opioid analgesia with those who received IV opioid-only analgesia and estimate differences in LOS, hospitalization costs, and opioid consumption. We performed a retrospective analysis of the Premier Database between January 2009 and June 2015, comparing OB/GYN surgery patients who received postoperative pain management with combination IV acetaminophen and IV opioids with those who received only IV opioids starting on the day of surgery and continuing up to the second postoperative day. We performed instrumental variable 2-stage least-squares regressions controlling for patient and hospital covariates to compare the LOS, hospitalization costs, and daily opioid doses (morphine equivalent dose) of IV acetaminophen recipients with that of opioid-only analgesia patients. We identified 225 142 OB/GYN surgery patients who were eligible for our study of whom 89 568 (40%) had been managed with IV acetaminophen and opioids. Participants averaged 36 years of age and were predominantly non-Hispanic Caucasians (60%). Multivariable regression models estimated statistically significant differences in hospitalization cost and opioid use with IV acetaminophen associated with $484.4 lower total hospitalization costs (95% CI = -$760.4 to -$208.4; P = 0.0006) and 8.2 mg lower daily opioid use (95% CI = -10.0 to -6.4), whereas the difference in LOS was not significant, at -0.09 days (95% CI = -0.19 to 0.01; P = 0.07). Compared with IV opioid-only analgesia, managing post-OB/GYN surgery pain with the addition of IV acetaminophen is associated with decreased hospitalization costs and reduced opioid use.

  17. Characteristics of Linear MHD Generators with One or a Few Loads

    International Nuclear Information System (INIS)

    Witalis, E.A.

    1966-02-01

    The theoretical performance of linear series segmented MHD generators with finite size electrodes and one or a few identical external loads is investigated. The analysis is an extension of our conformal mapping investigation previously reported. The electrical characteristics are evaluated as functions of the segmentation degree, the Hall parameter and the relative position of short-circuited electrodes. Special consideration is given to the influence of staggering the electrodes, i. e. shifting the relative positions of short-circuited electrodes. General electrical terminal characteristics, i. e. the full current-voltage relation, can not be obtained by the exact analytical method, which is applicable only to so-called design load conditions or infinitely long MHD channels. However, it is shown how the general properties can be explained qualitatively and calculated approximately by describing off-design modes of operation in terms of a fictitious 'effective' number of external loads

  18. Characteristics of Linear MHD Generators with One or a Few Loads

    Energy Technology Data Exchange (ETDEWEB)

    Witalis, E A

    1966-02-15

    The theoretical performance of linear series segmented MHD generators with finite size electrodes and one or a few identical external loads is investigated. The analysis is an extension of our conformal mapping investigation previously reported. The electrical characteristics are evaluated as functions of the segmentation degree, the Hall parameter and the relative position of short-circuited electrodes. Special consideration is given to the influence of staggering the electrodes, i. e. shifting the relative positions of short-circuited electrodes. General electrical terminal characteristics, i. e. the full current-voltage relation, can not be obtained by the exact analytical method, which is applicable only to so-called design load conditions or infinitely long MHD channels. However, it is shown how the general properties can be explained qualitatively and calculated approximately by describing off-design modes of operation in terms of a fictitious 'effective' number of external loads.

  19. Electrical characteristics of silicon percolating nanonet-based field effect transistors in the presence of dispersion

    Science.gov (United States)

    Cazimajou, T.; Legallais, M.; Mouis, M.; Ternon, C.; Salem, B.; Ghibaudo, G.

    2018-05-01

    We studied the current-voltage characteristics of percolating networks of silicon nanowires (nanonets), operated in back-gated transistor mode, for future use as gas or biosensors. These devices featured P-type field-effect characteristics. It was found that a Lambert W function-based compact model could be used for parameter extraction of electrical parameters such as apparent low field mobility, threshold voltage and subthreshold slope ideality factor. Their variation with channel length and nanowire density was related to the change of conduction regime from direct source/drain connection by parallel nanowires to percolating channels. Experimental results could be related in part to an influence of the threshold voltage dispersion of individual nanowires.

  20. Investigation of spectral characteristics of tunnel photodiodes based on DLC nanofilms

    Science.gov (United States)

    Akchurin, Garif G.; Aban'shin, Nickolay P.; Avetisyan, Yuri A.; Akchurin, Georgy G.; Kochubey, Vyacheslav I.; Yakunin, Alexander N.

    2018-04-01

    The tunneling photo effect has been studied in a microdiode with an electrostatic field localized at an emitter based on a nanosized DLC structure. It is established the photocurrent, when the carbon nanoemitter is exposed by laser and tunable low-coherent radiation in the spectral range from UV to near IR with photons of low energy (below work function). A linear dependence of the photocurrent on the level of optical power in the range of micro- and milliwatt power is established. The effect of saturation of the current-voltage characteristics of the tunnel photocurrent associated with a finite concentration of non-equilibrium photoelectrons is observed. The observed spectral Watt-Amper characteristics can be adequately interpreted using a modified Fowler-Nordheim equation for non-equilibrium photoelectrons.

  1. Gate-dependent asymmetric transport characteristics in pentacene barristors with graphene electrodes.

    Science.gov (United States)

    Hwang, Wang-Taek; Min, Misook; Jeong, Hyunhak; Kim, Dongku; Jang, Jingon; Yoo, Daekyung; Jang, Yeonsik; Kim, Jun-Woo; Yoon, Jiyoung; Chung, Seungjun; Yi, Gyu-Chul; Lee, Hyoyoung; Wang, Gunuk; Lee, Takhee

    2016-11-25

    We investigated the electrical characteristics and the charge transport mechanism of pentacene vertical hetero-structures with graphene electrodes. The devices are composed of vertical stacks of silicon, silicon dioxide, graphene, pentacene, and gold. These vertical heterojunctions exhibited distinct transport characteristics depending on the applied bias direction, which originates from different electrode contacts (graphene and gold contacts) to the pentacene layer. These asymmetric contacts cause a current rectification and current modulation induced by the gate field-dependent bias direction. We observed a change in the charge injection barrier during variable-temperature current-voltage characterization, and we also observed that two distinct charge transport channels (thermionic emission and Poole-Frenkel effect) worked in the junctions, which was dependent on the bias magnitude.

  2. Atlantic Flyway review: Region IV - Fall 2003

    Science.gov (United States)

    Robbins, Chandler S.

    2004-01-01

    We welcome the Eden Mill station in northeastern Maryland to Region IV this year. With three stations reporting their worst year ever, we really need to be refreshed. After a cool and wet July, August was hot and wet in the east. Temperatures in September remained close to normal, but thanks to tropical storms Henri (6-8 Sep) and Isabel (18 Sep), rainfall was excessive in the Chesapeake Bay states. The entire Northeast had cool weather in October, starting with an early freeze on 3 Oct that triggered some good banding days in our region. Precipitation was unusually spotty in October, but plentiful at most of the Region IV stations. November temperatures were consistently well above the norm, starting with a record-breaking 81 ø in Baltimore on the 1st.Four of the five Maryland stations had their best day on 19 or 20 Oct. One might expect some of the Virginia coastal stations, Chincoteague, Kiptopeke, and Back Bay, to share the same best day, but they did not. Three stations reported an increase in birds per net hour this year, while seven had a decline. Summarizing the changes in rank in Table 2, Gray Catbird was the species with the most (5) increases in rank (in excess of decreases), followed by junco (4) and Myrtle Warbler and Swamp Sparrow (3 each). Yellowthroat had the most decreases (5), followed by redstart (3).Myrtle Warbler (4572) was once again the most commonly banded species in Region IV, followed by White-throated Sparrow (1723), Gray Catbird (1349), and Western Palm Warbler (1090). Michelle Davis' station on Key Biscayne is the envy of the rest of us. Her top eight species were all warblers and there was not a Myrtle among them. Imagine having Parula, Prairie, and Worm-eating warblers fighting for sixth place!Not showing among the top ten, however, are other surprises. Several banders commented on Sawwhet Owls and Bicknell's Thrushes. Deanna Dawson banded a Cerulean Warbler at Patuxent. Danny Bystrak caught 138 Swamp Sparrows at Jug Bay. In addition

  3. Aluminum anode for aluminum-air battery - Part II: Influence of In addition on the electrochemical characteristics of Al-Zn alloy in alkaline solution

    Science.gov (United States)

    Park, In-Jun; Choi, Seok-Ryul; Kim, Jung-Gu

    2017-07-01

    Effects of Zn and In additions on the aluminum anode for Al-air battery in alkaline solution are examined by the self-corrosion rate, cell voltage, current-voltage characteristics, anodic polarization, discharge performance and AC impedance measurements. The passivation behavior of Zn-added anode during anodic polarization decreases the discharge performance of Al-air battery. The addition of In to Al-Zn anode reduces the formation of Zn passivation film by repeated adsorption and desorption behavior of In ion onto anode surface. The attenuated Zn passive layer by In ion attack leads to the improvement of discharge performance of Al-air battery.

  4. Transport characteristic in current-in-plane (CIP) geometry of La0.8Sr0.2MnO3/Co heterostructure

    International Nuclear Information System (INIS)

    Jin, K.X.; Zhao, S.G.; Chen, C.L.

    2009-01-01

    The thousand-fold change in the resistance with increase in temperature has been observed in the current-in-plane (CIP) geometry of the La 0.8 Sr 0.2 MnO 3 /Co heterostructure prepared using a sol-gel method. The CIP geometry below 300 K exhibits the variable-range hopping (VRH) mechanism. The current-voltage characteristic is nonlinear and the fitting shows that the exponent n decreases with increasing the temperature, which is attributed to the lattice mismatch between the LSMO film and the Co substrate.

  5. Spatial nonuniformity of current flow and its consideration in determination of characteristics of surface illuminated InAsSbP/InAs-based photodiodes

    Energy Technology Data Exchange (ETDEWEB)

    Zotova, N V; Karandashev, S A; Matveev, B. A., E-mail: Bmat@iropt3.ioffe.ru; Remennyy, M A; Rybal' chenko, A Yu; Stus' , N M [Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation)

    2011-04-15

    Current-voltage characteristics of surface-irradiated photodiodes based on the InAsSbP/InAs structures are analyzed using experimental data on the distribution of electroluminescence intensity over the diode surface and taking into account thickening the current streamlines near the contacts. The influence of the potential barrier associated with the N-InAsSbP/n-InAs junction in double heterostructures on the differential resistance of diodes under zero bias, the value of the reverse current, and spreading of the forward current is discussed.

  6. Spatial nonuniformity of current flow and its consideration in determination of characteristics of surface illuminated InAsSbP/InAs-based photodiodes

    International Nuclear Information System (INIS)

    Zotova, N. V.; Karandashev, S. A.; Matveev, B. A.; Remennyy, M. A.; Rybal’chenko, A. Yu.; Stus’, N. M.

    2011-01-01

    Current-voltage characteristics of surface-irradiated photodiodes based on the InAsSbP/InAs structures are analyzed using experimental data on the distribution of electroluminescence intensity over the diode surface and taking into account thickening the current streamlines near the contacts. The influence of the potential barrier associated with the N-InAsSbP/n-InAs junction in double heterostructures on the differential resistance of diodes under zero bias, the value of the reverse current, and spreading of the forward current is discussed.

  7. Near infrared group IV optoelectronics and novel pre-cursors for CVD epitaxy

    Science.gov (United States)

    Hazbun, Ramsey Michael

    measurements. The deposition of silicon using tetrasilane as a vapor pre-cursor is described for an ultra-high vacuum chemical vapor deposition tool. The growth rates and morphology of the Si epitaxial layers over a range of temperatures and pressures are presented. In order to understand the suitability of tetrasilane for the growth of SiGe and SiGeSn alloys, the layers were characterized using transmission electron microscopy, x-ray diffraction, spectroscopic ellipsometry, atomic force microscopy, and secondary ion mass spectrometry. To date no n-type doping has been demonstrated in GeSn alloys grown via MBE. A GaP decomposition source was used to grow n-type phosphorus doped GeSn layers on p- Ge substrates. Doping concentrations were calibrated using SIMS measurements. GeSn/Ge heterojunction diodes were grown and fabricated into mesa devices. Diode parameters were extracted from current-voltage measurements. The effects of P and Sn concentrations, metallization, and mesa geometry on device performance are all discussed.

  8. Method for estimation of the output electric power of PV module with considering environmental factors. Method for estimation of output using I-V curves; Kankyo inshi wo koryoshita taiyo denchi module no shutsuryoku keisanho. I-V tokusei curve ni yoru keisan

    Energy Technology Data Exchange (ETDEWEB)

    Yamagami, Y; Tani, T [Science University of Tokyo, Tokyo (Japan)

    1996-10-27

    Based on the basic quality equation of photovoltaic (PV) cell, a quality equation of PV module has been constructed by considering the spectral distribution of solar radiation and its intensity. A calculation method has been also proposed for determining the output from current-voltage (I-V) curves. Effectiveness of this method was examined by comparing calculated results and observed results. Amorphous Si (a-Si) and polycrystal Si PV modules were examined. By considering the environmental factors, differences of the annual output between the calculated and observed values were reduced from 2.50% to 0.95% for the a-Si PV module, and from 2.52% to 1.24% for the polycrystal Si PV module, which resulted in the reduction more than 50%. For the a-Si PV module, the environmental factor most greatly affecting the annual output was the spectral distribution of solar radiation, which was 3.86 times as large as the cell temperature, and 1.04 times as large as the intensity of solar radiation. For the polycrystal PV module, the environmental factor most greatly affecting the annual output was the cell temperature, which was 7.05 times as large as the spectral distribution of solar radiation, and 1.74 times as large as the intensity of solar radiation. 6 refs., 4 figs., 1 tab.

  9. Goodpasture's autoimmune disease - A collagen IV disorder.

    Science.gov (United States)

    Pedchenko, Vadim; Richard Kitching, A; Hudson, Billy G

    2018-05-12

    Goodpasture's (GP) disease is an autoimmune disorder characterized by the deposition of pathogenic autoantibodies in basement membranes of kidney and lung eliciting rapidly progressive glomerulonephritis and pulmonary hemorrhage. The principal autoantigen is the α345 network of collagen IV, which expression is restricted to target tissues. Recent discoveries include a key role of chloride and bromide for network assembly, a novel posttranslational modification of the antigen, a sulfilimine bond that crosslinks the antigen, and the mechanistic role of HLA in genetic susceptibility and resistance to GP disease. These advances provide further insights into molecular mechanisms of initiation and progression of GP disease and serve as a basis for developing of novel diagnostic tools and therapies for treatment of Goodpasture's disease. Copyright © 2017. Published by Elsevier B.V.

  10. US Nuclear Regulatory Commission region IV

    International Nuclear Information System (INIS)

    Vanderburch, C.

    1996-01-01

    The NRC has established a policy to provide for the timely through and systematic inspection of significant operational events at nuclear power plants. This includes the use of an Augmented Inspection Team to determine the causes, conditions, and circumstances relevant to an event and to communicate its findings and conclusions to NRC management. In accordance with NRC Inspection Manual Chapter 0325. The Region IV Regional Administrator dispatched an Augmented Inspection Team to the Wolf Creek Nuclear Generating Station to review the circumstances surrounding a manual reactor trip on January 30, 1996, with the failure of five control rods to fully insert into the core, a failure of the turbine-driven auxiliary feedwater pump, and the subsequent loss of one train of the essential service water system

  11. Review of the BCI Competition IV

    Science.gov (United States)

    Tangermann, Michael; Müller, Klaus-Robert; Aertsen, Ad; Birbaumer, Niels; Braun, Christoph; Brunner, Clemens; Leeb, Robert; Mehring, Carsten; Miller, Kai J.; Müller-Putz, Gernot R.; Nolte, Guido; Pfurtscheller, Gert; Preissl, Hubert; Schalk, Gerwin; Schlögl, Alois; Vidaurre, Carmen; Waldert, Stephan; Blankertz, Benjamin

    2012-01-01

    The BCI competition IV stands in the tradition of prior BCI competitions that aim to provide high quality neuroscientific data for open access to the scientific community. As experienced already in prior competitions not only scientists from the narrow field of BCI compete, but scholars with a broad variety of backgrounds and nationalities. They include high specialists as well as students. The goals of all BCI competitions have always been to challenge with respect to novel paradigms and complex data. We report on the following challenges: (1) asynchronous data, (2) synthetic, (3) multi-class continuous data, (4) session-to-session transfer, (5) directionally modulated MEG, (6) finger movements recorded by ECoG. As after past competitions, our hope is that winning entries may enhance the analysis methods of future BCIs. PMID:22811657

  12. Titanium(IV), zirconium, hafnium and thorium

    International Nuclear Information System (INIS)

    Brown, Paul L.; Ekberg, Christian

    2016-01-01

    Titanium can exist in solution in a number of oxidation states. The titanium(IV) exists in acidic solutions as the oxo-cation, TiO 2+ , rather than Ti 4+ . Zirconium is used in the ceramics industry and in nuclear industry as a cladding material in reactors where its reactivity towards hydrolysis reactions and precipitation of oxides may result in degradation of the cladding. In nature, hafnium is found together with zirconium and as a consequence of the contraction in ionic radii that occurs due to the 4f -electron shell, the ionic radius of hafnium is almost identical to that of zirconium. All isotopes of thorium are radioactive and, as a consequence of it being fertile, thorium is important in the nuclear fuel cycle. The polymeric hydrolysis species that have been reported for thorium are somewhat different to those identified for zirconium and hafnium, although thorium does form the Th 4 (OH) 8 8+ species.

  13. Ultrathin magnetic structures IV applications of nanomagnetism

    CERN Document Server

    Heinrich, Bretislav

    2004-01-01

    The ability to understand and control the unique properties of interfaces has created an entirely new field of magnetism which already has a profound impact in technology and is providing the basis for a revolution in electronics. The last decade has seen dramatic progress in the development of magnetic devices for information technology but also in the basic understanding of the physics of magnetic nanostructures. Volume III describes thin film magnetic properties and methods for characterising thin film structure topics that underpin the present 'spintronics' revolution in which devices are based on combined magnetic materials and semiconductors. The present volume (IV) deals with the fundamentals of spintronics: magnetoelectronic materials, spin injection and detection, micromagnetics and the development of magnetic random access memory based on GMR and tunnel junction devices. Together these books provide readers with a comprehensive account of an exciting and rapidly developing field. The treatment is de...

  14. KENO-IV code benchmark calculation, (6)

    International Nuclear Information System (INIS)

    Nomura, Yasushi; Naito, Yoshitaka; Yamakawa, Yasuhiro.

    1980-11-01

    A series of benchmark tests has been undertaken in JAERI in order to examine the capability of JAERI's criticality safety evaluation system consisting of the Monte Carlo calculation code KENO-IV and the newly developed multigroup constants library MGCL. The present report describes the results of a benchmark test using criticality experiments about Plutonium fuel in various shape. In all, 33 cases of experiments have been calculated for Pu(NO 3 ) 4 aqueous solution, Pu metal or PuO 2 -polystyrene compact in various shape (sphere, cylinder, rectangular parallelepiped). The effective multiplication factors calculated for the 33 cases distribute widely between 0.955 and 1.045 due to wide range of system variables. (author)

  15. Cranial nerves III, IV and VI

    International Nuclear Information System (INIS)

    Laine, I.J.; Smoker, W.R.; Kuta, A.J.; Felton, W.L.

    1991-01-01

    Because of advances in CT and MR imaging, accurate identification and evaluation of cranial nerve lesions is now possible. Cranial nerves III, IV, and VI, providing motor and sensory control of the eye, can be evaluated as a unit. In this paper, the authors present an overview of the anatomy and pathology of these cranial nerves. We first illustrate their normal anatomic pathways from the brain stem to the orbit. This is followed by clinical examples of patients with a variety of isolated and complex palsies of these three cranial nerves. This is accomplished by inclusion of ocular photographs, correlative imaging studies, and the use of diagrams. Knowledge of the gross and imaging anatomy and the ophthalmologic manifestations of pathology affecting these three cranial nerves permits a tailored approach to their evaluation

  16. (N-Benzyl-N-isopropyldithiocarbamatochloridodiphenyltin(IV

    Directory of Open Access Journals (Sweden)

    Amirah Faizah Abdul Muthalib

    2010-09-01

    Full Text Available The SnIV atom in the title organotin dithiocarbamate, [Sn(C6H52(C11H14NS2Cl], is penta-coordinated by an asymmetrically coordinating dithiocarbamate ligand, a Cl and two ispo-C atoms of the Sn-bound phenyl groups. The resulting C2ClS2 donor set defines a coordination geometry intermediate between square-pyramidal and trigonal-bipyramidal with a slight tendency towards the latter. The formation of close intramolecular C–H...Cl and C–H...S contacts precludes the Cl and S atoms from forming significant intermolecular contacts. The presence of C–H...π contacts leads to the formation of supramolecular arrays that stack along the b axis.

  17. AtlA functions as a peptidoglycan lytic transglycosylase in the Neisseria gonorrhoeae type IV secretion system.

    Science.gov (United States)

    Kohler, Petra L; Hamilton, Holly L; Cloud-Hansen, Karen; Dillard, Joseph P

    2007-08-01

    Type IV secretion systems require peptidoglycan lytic transglycosylases for efficient secretion, but the function of these enzymes is not clear. The type IV secretion system gene cluster of Neisseria gonorrhoeae encodes two peptidoglycan transglycosylase homologues. One, LtgX, is similar to peptidoglycan transglycosylases from other type IV secretion systems. The other, AtlA, is similar to endolysins from bacteriophages and is not similar to any described type IV secretion component. We characterized the enzymatic function of AtlA in order to examine its role in the type IV secretion system. Purified AtlA was found to degrade macromolecular peptidoglycan and to produce 1,6-anhydro peptidoglycan monomers, characteristic of lytic transglycosylase activity. We found that AtlA can functionally replace the lambda endolysin to lyse Escherichia coli. In contrast, a sensitive measure of lysis demonstrated that AtlA does not lyse gonococci expressing it or gonococci cocultured with an AtlA-expressing strain. The gonococcal type IV secretion system secretes DNA during growth. A deletion of ltgX or a substitution in the putative active site of AtlA severely decreased DNA secretion. These results indicate that AtlA and LtgX are actively involved in type IV secretion and that AtlA is not involved in lysis of gonococci to release DNA. This is the first demonstration that a type IV secretion peptidoglycanase has lytic transglycosylase activity. These data show that AtlA plays a role in type IV secretion of DNA that requires peptidoglycan breakdown without cell lysis.

  18. Modcomp MAX IV System Processors reference guide

    Energy Technology Data Exchange (ETDEWEB)

    Cummings, J.

    1990-10-01

    A user almost always faces a big problem when having to learn to use a new computer system. The information necessary to use the system is often scattered throughout many different manuals. The user also faces the problem of extracting the information really needed from each manual. Very few computer vendors supply a single Users Guide or even a manual to help the new user locate the necessary manuals. Modcomp is no exception to this, Modcomp MAX IV requires that the user be familiar with the system file usage which adds to the problem. At General Atomics there is an ever increasing need for new users to learn how to use the Modcomp computers. This paper was written to provide a condensed Users Reference Guide'' for Modcomp computer users. This manual should be of value not only to new users but any users that are not Modcomp computer systems experts. This Users Reference Guide'' is intended to provided the basic information for the use of the various Modcomp System Processors necessary to, create, compile, link-edit, and catalog a program. Only the information necessary to provide the user with a basic understanding of the Systems Processors is included. This document provides enough information for the majority of programmers to use the Modcomp computers without having to refer to any other manuals. A lot of emphasis has been placed on the file description and usage for each of the System Processors. This allows the user to understand how Modcomp MAX IV does things rather than just learning the system commands.

  19. New mono-organotin (IV) dithiocarbamate complexes

    International Nuclear Information System (INIS)

    Muthalib, Amirah Faizah Abdul; Baba, Ibrahim

    2014-01-01

    Eighteen new mono-organotin dithiocarbamate compounds derived each nine from methyltin(IV) and phenyltin(IV) reacted using in-situ method with various type of N-dialkylamine together with carbon disulphide with the ratio of 1:3:3. Elemental and gravimetric analysis showed that the general formula of these compounds were RSnCl[S 2 CNR′R″] 2 (R= Ph, CH 3 , R′ = CH 3 , C 2 H 5 , C 7 H 7 and R″ = C 2 H 5 , C 6 H 11 , iC 3 H 7 , C 7 H 7 ). These compounds had been characterized by infrared spectroscopy, ultraviolet spectroscopy, 1 H, 13 C NMR spectroscopy and single crystal X-ray crystallography. The infrared spectra of these compounds showed three important peaks indicating the formation of dithiocarbamate compounds, ν(C N), ν(C S) and ν(Sn-S) band which present in the region of 1444–1519, 954–1098 and 318–349 cm −1 respectively. The ultraviolet-visible spectra showed an absorption band for the π - π* transition of N C S group in the range of 253 – 259 nm due to the intramolecular charge transfer of the ligand. The 13 C NMR spectra showed an important shift for δ(N 13 CS 2 ) in the range of 196.8 – 201.9 ppm.. Single crystal X-ray diffraction studies showed three new structures with the general formula of PhSnCl[S 2 CN(Et)(i−Pr)] 2 , MeSnCl[S 2 CN(Me)(Cy)] 2 and MeSnCl[S 2 CN(i−Pr)(CH 2 Ph)] 2 . All structures having a distorted octahedral geometry set by CClS 4 donor atom from the two chelating dithiocarbamate ligands

  20. Gen IV International Forum - GIF, 2010 Annual Report

    International Nuclear Information System (INIS)

    Anon.

    2011-01-01

    being down for 15 years, and the China experimental fast reactor (CEFR) reached its first criticality in July. Despite the closure of PBMR, projects for new VHTR are ongoing, including the HTR-PM in China, now ready for construction, and the NGNP in United States, while the HTTR prototype in Japan achieved successfully 50 days of continuous operation at 950 deg. C. This fourth GIF Annual Report includes four chapters in addition to this introduction plus three appendices. Chapter 2 describes the membership and organization of GIF, the structure of its cooperative research and development arrangements as well as the status of members' participation in such arrangements. Chapter 3 summarizes GIF R and D plans, activities and achievements during 2010. It highlights the R and D challenges facing the teams developing Generation IV systems and the major milestones towards the development of these systems. It also describes the progress made on the development of methodologies for assessing Generation IV systems with respect to the established goals of GIF. Chapter 4 reviews the cooperation between GIF and other international programs dealing with the development of nuclear energy. Appendix 1 provides an overview on the goals of Generation IV nuclear energy systems and an outline of the main characteristics of the six systems selected for joint development by GIF. Appendix 2 presents the objectives that have been set for the various System Steering Committees and the associated Project Management Boards for the period extending from 2010 to 2015. Finally, Appendix 3 provides a list of abbreviations and acronyms (with the corresponding definitions) which are used in this report or are relevant to GIF activities

  1. Are stage IV vestibular schwannomas preoperatively different from other stages?

    Science.gov (United States)

    Tringali, Stéphane; Dubreuil, Christian; Zaouche, Sandra; Ferber-Viart, Chantal

    2008-01-01

    The aim of this study was to focus on the clinical and paraclinical symptoms of patients suffering from Stage IV vestibular schwannomas (VSs). In this prospective study, we included 734 patients who have VS and candidates for operation. Patients were classified as having Stage I, II, III, or IV tumors according to Tos criteria as evaluated by magnetic resonance imaging. PREOPERATIVE CLINICAL EVALUATION: We recorded the occurrence of complaints (%) and duration (yr) of hearing loss, tinnitus, and balance disorder. Preoperative paraclinical evaluation included pure-tone (PTA) and speech audiometry, auditory brainstem response (ABR) patterns, and vestibular deficit at videonystamography (VNG). Continuous variables were compared between Stage IV and other stages using analysis of variance. Qualitative variables expressed as a percentage of presence were compared between Stage IV and other stages using percentage comparison. Quantitative Parameters. Patients with Stage IV VS were significantly younger as compared with patients with other stages. Stage IV hearing loss was greater compared with other stages at 250 and 500 Hz but smaller at 2,000 and 8,000 Hz. We found no difference in the loss of PTA between Stage IV and the other stages. Speech discriminancy score was smaller in Stage IV. The durations of hearing loss, tinnitus, and balance disorders were similar whatever the tumor stage. Auditory brainstem response patterns showed no difference in Wave III latency between Stage IV VS and other stages, whereas Wave V latency and V-I interval were higher in Stage IV. Both ABR threshold and VNG caloric deficit were higher in Stage IV VS compared with other stages. Qualitative Parameters. The percentage of patients with Stage IV was lower than that with Stages II and III. The percentage of men and women was similar in all stages. The occurrence of hearing loss was similar in all stages, whereas that of tinnitus was lower in Stage IV compared with Stages I and II. In

  2. Modelling of electric characteristics of 150-watt peak solar panel using Boltzmann sigmoid function under various temperature and irradiance

    Science.gov (United States)

    Sapteka, A. A. N. G.; Narottama, A. A. N. M.; Winarta, A.; Amerta Yasa, K.; Priambodo, P. S.; Putra, N.

    2018-01-01

    Solar energy utilized with solar panel is a renewable energy that needs to be studied further. The site nearest to the equator, it is not surprising, receives the highest solar energy. In this paper, a modelling of electrical characteristics of 150-Watt peak solar panels using Boltzmann sigmoid function under various temperature and irradiance is reported. Current, voltage, temperature and irradiance data in Denpasar, a city located at just south of equator, was collected. Solar power meter is used to measure irradiance level, meanwhile digital thermometer is used to measure temperature of front and back panels. Short circuit current and open circuit voltage data was also collected at different temperature and irradiance level. Statistically, the electrical characteristics of 150-Watt peak solar panel can be modelled using Boltzmann sigmoid function with good fit. Therefore, it can be concluded that Boltzmann sigmoid function might be used to determine current and voltage characteristics of 150-Watt peak solar panel under various temperature and irradiance.

  3. Collagen type IV at the fetal-maternal interface.

    Science.gov (United States)

    Oefner, C M; Sharkey, A; Gardner, L; Critchley, H; Oyen, M; Moffett, A

    2015-01-01

    Extracellular matrix proteins play a crucial role in influencing the invasion of trophoblast cells. However the role of collagens and collagen type IV (col-IV) in particular at the implantation site is not clear. Immunohistochemistry was used to determine the distribution of collagen types I, III, IV and VI in endometrium and decidua during the menstrual cycle and the first trimester of pregnancy. Expression of col-IV alpha chains during the reproductive cycle was determined by qPCR and protein localisation by immunohistochemistry. The structure of col-IV in placenta was examined using transmission electron microscopy. Finally, the expression of col-IV alpha chain NC1 domains and collagen receptors was localised by immunohistochemistry. Col-IV alpha chains were selectively up-regulated during the menstrual cycle and decidualisation. Primary extravillous trophoblast cells express collagen receptors and secrete col-IV in vitro and in vivo, resulting in the increased levels found in decidua basalis compared to decidua parietalis. A novel expression pattern of col-IV in the mesenchyme of placental villi, as a three-dimensional network, was found. NC1 domains of col-IV alpha chains are known to regulate tumour cell migration and the selective expression of these domains in decidua basalis compared to decidua parietalis was determined. Col-IV is expressed as novel forms in the placenta. These findings suggest that col-IV not only represents a structural protein providing tissue integrity but also influences the invasive behaviour of trophoblast cells at the implantation site. Copyright © 2014 Elsevier Ltd. All rights reserved.

  4. Thermodynamic properties of actinide complexes. IV. Thorium(IV)- and uranyl(VI)-malonate systems

    Energy Technology Data Exchange (ETDEWEB)

    Di Bernardo, P; Di Napoli, V; Cassol, A; Magon, L [Consiglio Nazionale delle Ricerche, Padua (Italy). Lab. di Chimica e Tecnologia dei Radioelementi

    1977-01-01

    The stability constants and the enthalpies of formation of thorium(IV)- and uranyl(VI)-malonate complexes have been determined by potentiometric and calorimetric titrations in 1.00 M solutions of Na(ClO/sub 4/) at 25/sup 0/C. All complexes formed are found to be stabilized by a large entropy gain. The values for the stability constants agree with an ionic bonding model. The malonate behaves as a bidentate ligand forming only chelate complexes.

  5. Transient Analysis of Generation IV quick reactors; Analisis de Transitorios en Reactores Rapidos de Generacion IV

    Energy Technology Data Exchange (ETDEWEB)

    Vazquez, M.; Martin-Fuertes, F.

    2013-07-01

    As a complement to the attached code 3D neutron-CIEMAT thermohydraulic added a module to simulate transient. Temporary kinetics is resolved by factoring flow in a spatial part and another storm. MCNP provides the reactivity and updated spatial function and COBRA-IV calculates the temperature distribution. Temporary dependence of amplitude is calculated using time delayed neutron Kinetic equations. As an example of application, examines a transient loss of flow in MYRRHA, a lead-cooled experimental reactor.

  6. Complexes of uranium (IV) and thorium (IV) with α-picolinic acid, nicotinic acid, anthranilic acid and N-phenylanthranilic acid

    International Nuclear Information System (INIS)

    Singh, M.; Singh, R.

    1979-01-01

    Stable U(IV) and Th(IV) complexes with the title ligands have been synthesised from U(OAc) 4 , and Th(OAc) 4 . Magnetic susceptibilities, IR and reflectance spectra of U(IV) and IR spectra of Th(IV) complexes have been studied which indicate eight coordination for U(IV) in these chelates. (auth.)

  7. Computations of nuclear response functions with MACK-IV

    International Nuclear Information System (INIS)

    Abdou, M.A.; Gohar, Y.

    1978-01-01

    The MACK computer program calculates energy pointwise and multigroup nuclear response functions from basic nuclear data in ENDF/B format. The new version of the program, MACK-IV, incorporates major developments and improvements aimed at maximizing the utilization of available nuclear data and ensuring energy conservation in nuclear heating calculations. A new library, MACKLIB-IV, of nuclear response functions was generated in the CTR energy group structure of 171 neutron groups and 36 gamma groups. The library was prepared using MACK-IV and ENDF/B-IV and is suitable for fusion, fusion-fission hybrids, and fission applications

  8. 1L Mark-IV Target Design Review

    Energy Technology Data Exchange (ETDEWEB)

    Koehler, Paul E. [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

    2017-11-16

    This presentation includes General Design Considerations; Current (Mark-III) Lower Tier; Mark-III Upper Tier; Performance Metrics; General Improvements for Material Science; General Improvements for Nuclear Science; Improving FOM for Nuclear Science; General Design Considerations Summary; Design Optimization Studies; Expected Mark-IV Performance: Material Science; Expected Mark-IV Performance: Nuclear Science (Disk); Mark IV Enables Much Wider Range of Nuclear-Science FOM Gains than Mark III; Mark-IV Performance Summary; Rod or Disk? Center or Real FOV?; and Project Cost and Schedule.

  9. BALTICA IV. Plant maintenance for managing life and performance

    Energy Technology Data Exchange (ETDEWEB)

    Hietanen, S.; Auerkari, P. [eds.] [VTT Manufacturing Technology, Espoo (Finland). Operational Reliability

    1998-12-31

    BALTICA IV International Conference on Plant Maintenance Managing Life and performance held on September 7-9, 1998 on board M/S Silja Symphony on its cruise between Helsinki-Stockholm and at Aavaranta in Kirkkonummi. The BALTICA IV conference provides a forum for the transfer of technology from applied research to practice. This is one of the two volumes of the proceedings of the BALTICA IV International Conference on Plant Maintenance Managing Life and Performance. The BALTICA IV conference focuses on new technology, recent experience and applications of condition and life management, and on improvements in maintenance strategies for safe and economical operation of power plants. (orig.)

  10. Computations of nuclear response functions with MACK-IV

    Energy Technology Data Exchange (ETDEWEB)

    Abdou, M A; Gohar, Y

    1978-01-01

    The MACK computer program calculates energy pointwise and multigroup nuclear response functions from basic nuclear data in ENDF/B format. The new version of the program, MACK-IV, incorporates major developments and improvements aimed at maximizing the utilization of available nuclear data and ensuring energy conservation in nuclear heating calculations. A new library, MACKLIB-IV, of nuclear response functions was generated in the CTR energy group structure of 171 neutron groups and 36 gamma groups. The library was prepared using MACK-IV and ENDF/B-IV and is suitable for fusion, fusion-fission hybrids, and fission applications.

  11. BALTICA IV. Plant maintenance for managing life and performance

    Energy Technology Data Exchange (ETDEWEB)

    Hietanen, S; Auerkari, P [eds.; VTT Manufacturing Technology, Espoo (Finland). Operational Reliability

    1999-12-31

    BALTICA IV International Conference on Plant Maintenance Managing Life and performance held on September 7-9, 1998 on board M/S Silja Symphony on its cruise between Helsinki-Stockholm and at Aavaranta in Kirkkonummi. The BALTICA IV conference provides a forum for the transfer of technology from applied research to practice. This is one of the two volumes of the proceedings of the BALTICA IV International Conference on Plant Maintenance Managing Life and Performance. The BALTICA IV conference focuses on new technology, recent experience and applications of condition and life management, and on improvements in maintenance strategies for safe and economical operation of power plants. (orig.)

  12. New mono-organotin (IV) dithiocarbamate complexes

    Energy Technology Data Exchange (ETDEWEB)

    Muthalib, Amirah Faizah Abdul; Baba, Ibrahim [School of Chemical Sciences and Food Technology, Faculty of Science and Technology, Universiti Kebangsaan Malaysia, 43600 Bangi (Malaysia)

    2014-09-03

    Eighteen new mono-organotin dithiocarbamate compounds derived each nine from methyltin(IV) and phenyltin(IV) reacted using in-situ method with various type of N-dialkylamine together with carbon disulphide with the ratio of 1:3:3. Elemental and gravimetric analysis showed that the general formula of these compounds were RSnCl[S{sub 2}CNR′R″]{sub 2} (R= Ph, CH{sub 3}, R′ = CH{sub 3}, C{sub 2}H{sub 5}, C{sub 7}H{sub 7} and R″ = C{sub 2}H{sub 5}, C{sub 6}H{sub 11}, iC{sub 3}H{sub 7}, C{sub 7}H{sub 7}). These compounds had been characterized by infrared spectroscopy, ultraviolet spectroscopy, {sup 1}H, {sup 13}C NMR spectroscopy and single crystal X-ray crystallography. The infrared spectra of these compounds showed three important peaks indicating the formation of dithiocarbamate compounds, ν(CN), ν(CS) and ν(Sn-S) band which present in the region of 1444–1519, 954–1098 and 318–349 cm{sup −1} respectively. The ultraviolet-visible spectra showed an absorption band for the π - π* transition of NCS group in the range of 253 – 259 nm due to the intramolecular charge transfer of the ligand. The {sup 13}C NMR spectra showed an important shift for δ(N{sup 13}CS{sub 2}) in the range of 196.8 – 201.9 ppm.. Single crystal X-ray diffraction studies showed three new structures with the general formula of PhSnCl[S{sub 2}CN(Et)(i−Pr)]{sub 2}, MeSnCl[S{sub 2}CN(Me)(Cy)]{sub 2} and MeSnCl[S{sub 2}CN(i−Pr)(CH{sub 2}Ph)]{sub 2}. All structures having a distorted octahedral geometry set by CClS{sub 4} donor atom from the two

  13. Comparative study of cerium (IV) sorptive properties in zeolite Y and clinoptilolite; Estudio comparativo de la fijacion de cerio (IV) en zeolitas, faujasita-Y y clinoptilolita

    Energy Technology Data Exchange (ETDEWEB)

    Garcia D, O C

    1994-12-31

    Among the problems of protecting the environment from radioactive contamination, the reduction of radioactive releases by improving monitoring, decontamination, and burial methods is one of the most important. Natural sorbents are gaining increased significance for solving this problem. Among these, zeolites deserve special attention since they have sufficient sorptive capacity, are highly radiation resistant, are widely distributed exhibit selectivity and are inexpensive. In the present work we determine experimentally the sorptive characteristics of clinoptilolite as a function of various factors and demonstrate that clinoptilolite is capable of sorbing Ce(IV) over a wide pH range. (Author).

  14. The Role of Dipeptidyl Peptidase IV in Lung Metastasis of Breast Cancer Cells

    Science.gov (United States)

    1999-05-01

    Our studies focused on (1) cloning and sequencing of wild-type endothelial DPP IV (wtDPP IV) and preparation of truncated DPP IV ( tDPP IV); (2...that was identical to hepatic DPP IV. Acid extraction of rat lung yielded a tDPP IV, which was an effective inhibitor of breast cancer cell adhesion to

  15. Two-dimensional multiferroics in monolayer group IV monochalcogenides

    Science.gov (United States)

    Wang, Hua; Qian, Xiaofeng

    2017-03-01

    Low-dimensional multiferroic materials hold great promises in miniaturized device applications such as nanoscale transducers, actuators, sensors, photovoltaics, and nonvolatile memories. Here, using first-principles theory we predict that two-dimensional (2D) monolayer group IV monochalcogenides including GeS, GeSe, SnS, and SnSe are a class of 2D semiconducting multiferroics with giant strongly-coupled in-plane spontaneous ferroelectric polarization and spontaneous ferroelastic lattice strain that are thermodynamically stable at room temperature and beyond, and can be effectively modulated by elastic strain engineering. Their optical absorption spectra exhibit strong in-plane anisotropy with visible-spectrum excitonic gaps and sizable exciton binding energies, rendering the unique characteristics of low-dimensional semiconductors. More importantly, the predicted low domain wall energy and small migration barrier together with the coupled multiferroic order and anisotropic electronic structures suggest their great potentials for tunable multiferroic functional devices by manipulating external electrical, mechanical, and optical field to control the internal responses, and enable the development of four device concepts including 2D ferroelectric memory, 2D ferroelastic memory, and 2D ferroelastoelectric nonvolatile photonic memory as well as 2D ferroelectric excitonic photovoltaics.

  16. DISCOVERY OF C IV EMISSION FILAMENTS IN M87

    International Nuclear Information System (INIS)

    Sparks, W. B.; Pringle, J. E.; Cracraft, M.; Donahue, M.; Voit, M.; Carswell, R.; Martin, R. G.

    2009-01-01

    Gas at intermediate temperatures between the hot X-ray-emitting coronal gas in galaxies at the centers of galaxy clusters and the much cooler optical line emitting filaments yields information on transport processes and plausible scenarios for the relationship between X-ray cool cores and other galactic phenomena such as mergers or the onset of an active galactic nucleus. Hitherto, detection of intermediate temperature gas has proven elusive. Here, we present FUV imaging of the 'low excitation' emission filaments of M87 and show strong evidence for the presence of C IV 1549 A emission which arises in gas at temperature ∼10 5 K co-located with Hα+[N II] emission from cooler ∼10 4 K gas. We infer that the hot and cool phases are in thermal communication, and show that quantitatively the emission strength is consistent with thermal conduction, which in turn may account for many of the observed characteristics of cool-core galaxy clusters.

  17. LSPRAY-IV: A Lagrangian Spray Module

    Science.gov (United States)

    Raju, M. S.

    2012-01-01

    LSPRAY-IV is a Lagrangian spray solver developed for application with parallel computing and unstructured grids. It is designed to be massively parallel and could easily be coupled with any existing gas-phase flow and/or Monte Carlo Probability Density Function (PDF) solvers. The solver accommodates the use of an unstructured mesh with mixed elements of either triangular, quadrilateral, and/or tetrahedral type for the gas flow grid representation. It is mainly designed to predict the flow, thermal and transport properties of a rapidly vaporizing spray. Some important research areas covered as a part of the code development are: (1) the extension of combined CFD/scalar-Monte- Carlo-PDF method to spray modeling, (2) the multi-component liquid spray modeling, and (3) the assessment of various atomization models used in spray calculations. The current version contains the extension to the modeling of superheated sprays. The manual provides the user with an understanding of various models involved in the spray formulation, its code structure and solution algorithm, and various other issues related to parallelization and its coupling with other solvers.

  18. Ab initio calculation of contact effects on electron transport through single molecules by the RTM/NEGF method

    International Nuclear Information System (INIS)

    Hirose, Kenji; Kobayashi, Nobuhiko

    2006-01-01

    Using the recursion-transfer-matrix (RTM) method combined with the nonequilibrium Green's function (NEGF) method, we study the electronic states and current-voltage (I-V) characteristics of atomic-scale nanocontact systems. We find that non-linear behaviors appear in the I-V characteristics even without molecules between electrodes. Such non-linear behaviors emerge when the nanocontacts are not well constructed and the transport properties change from tunneling to ballistic regimes

  19. Influence of the structural and compositional properties of PECVD silicon nitride layers on the passivation of AIGaN/GaN HEMTs

    NARCIS (Netherlands)

    Karouta, F.; Krämer, M.C.J.C.M.; Kwaspen, J.J.M.; Grzegorczyk, A.; Hageman, P.R.; Hoex, B.; Kessels, W.M.M.; Klootwijk, J.H.; Timmering, E.C.; Smit, M.K.; Wang, J.; Shiojima, K.

    2008-01-01

    We have investigated the influence of the structural and compositional properties of silicon nitride layers on the passivation of AlGaN/GaN HEMTs grown on sapphire substrates by assessing their continuous wave (CW) and pulsed current-voltage (I-V) characteristics. We have looked at the effect of

  20. Electron heating by photon-assisted tunneling in niobium terahertz mixers with integrated niobium titanium nitride striplines

    NARCIS (Netherlands)

    Leone, B; Gao, [No Value; Klapwijk, TM; Jackson, BD; Laauwen, WM; de Lange, G

    2001-01-01

    We describe the gap voltage depression and current-voltage (I-V) characteristics in pumped niobium superconductor-insulator-superconductor junction with niobium titanium nitride tuning stripline by introducing an electron heating power contribution resulting from the photon-assisted tunneling