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Sample records for current-voltage iv characteristics

  1. Current-Voltage Characteristics of Quasi-One-Dimensional Superconductors

    DEFF Research Database (Denmark)

    Vodolazov, D.Y.; Peeters, F.M.; Piraux, L.

    2003-01-01

    The current-voltage (I-V) characteristics of quasi-one-dimensional superconductors were discussed. The I-V characteristics exhibited an unusual S behavior. The dynamics of superconducting condensate and the existence of two different critical currents resulted in such an unusual behavior....

  2. Room temperature current-voltage (I-V) characteristics of Ag/InGaN/n-Si Schottky barrier diode

    Science.gov (United States)

    Erdoğan, Erman; Kundakçı, Mutlu

    2017-02-01

    Metal-semiconductors (MSs) or Schottky barrier diodes (SBDs) have a significant potential in the integrated device technology. In the present paper, electrical characterization of Ag/InGaN/n-Si Schottky diode have been systematically carried out by simple Thermionic method (TE) and Norde function based on the I-V characteristics. Ag ohmic and schottky contacts are deposited on InGaN/n-Si film by thermal evaporation technique under a vacuum pressure of 1×10-5 mbar. Ideality factor, barrier height and series resistance values of this diode are determined from I-V curve. These parameters are calculated by TE and Norde methods and findings are given in a comparetive manner. The results show the consistency for both method and also good agreement with other results obtained in the literature. The value of ideality factor and barrier height have been determined to be 2.84 and 0.78 eV at room temperature using simple TE method. The value of barrier height obtained with Norde method is calculated as 0.79 eV.

  3. Current-voltage characteristics of carbon nanotubes with substitutional nitrogen

    DEFF Research Database (Denmark)

    Kaun, C.C.; Larade, B.; Mehrez, H.;

    2002-01-01

    We report ab initio analysis of current-voltage (I-V) characteristics of carbon nanotubes with nitrogen substitution doping. For zigzag semiconducting tubes, doping with a single N impurity increases current flow and, for small radii tubes, narrows the current gap. Doping a N impurity per nanotube...... unit cell generates a metallic transport behavior. Nonlinear I-V characteristics set in at high bias and a negative differential resistance region is observed for the doped tubes. These behaviors can be well understood from the alignment/mis-alignment of the current carrying bands in the nanotube leads...... due to the applied bias voltage. For a armchair metallic nanotube, a reduction of current is observed with substitutional doping due to elastic backscattering by the impurity....

  4. Current-voltage characteristics of double-strand DNA sequences

    Science.gov (United States)

    Bezerril, L. M.; Moreira, D. A.; Albuquerque, E. L.; Fulco, U. L.; de Oliveira, E. L.; de Sousa, J. S.

    2009-09-01

    We use a tight-binding formulation to investigate the transmissivity and the current-voltage (I-V) characteristics of sequences of double-strand DNA molecules. In order to reveal the relevance of the underlying correlations in the nucleotides distribution, we compare the results for the genomic DNA sequence with those of artificial sequences (the long-range correlated Fibonacci and Rudin-Shapiro one) and a random sequence, which is a kind of prototype of a short-range correlated system. The random sequence is presented here with the same first neighbors pair correlations of the human DNA sequence. We found that the long-range character of the correlations is important to the transmissivity spectra, although the I-V curves seem to be mostly influenced by the short-range correlations.

  5. Current-voltage characteristics of double-strand DNA sequences

    Energy Technology Data Exchange (ETDEWEB)

    Bezerril, L.M.; Moreira, D.A. [Departamento de Fisica, Universidade Federal do Rio Grande do Norte, 59072-970, Natal-RN (Brazil); Albuquerque, E.L., E-mail: eudenilson@dfte.ufrn.b [Departamento de Fisica, Universidade Federal do Rio Grande do Norte, 59072-970, Natal-RN (Brazil); Fulco, U.L. [Departamento de Biofisica e Farmacologia, Universidade Federal do Rio Grande do Norte, 59072-970, Natal-RN (Brazil); Oliveira, E.L. de; Sousa, J.S. de [Departamento de Fisica, Universidade Federal do Ceara, 60455-760, Fortaleza-CE (Brazil)

    2009-09-07

    We use a tight-binding formulation to investigate the transmissivity and the current-voltage (I-V) characteristics of sequences of double-strand DNA molecules. In order to reveal the relevance of the underlying correlations in the nucleotides distribution, we compare the results for the genomic DNA sequence with those of artificial sequences (the long-range correlated Fibonacci and Rudin-Shapiro one) and a random sequence, which is a kind of prototype of a short-range correlated system. The random sequence is presented here with the same first neighbors pair correlations of the human DNA sequence. We found that the long-range character of the correlations is important to the transmissivity spectra, although the I-V curves seem to be mostly influenced by the short-range correlations.

  6. Branching in current-voltage characteristics of intrinsic Josephson junctions

    Energy Technology Data Exchange (ETDEWEB)

    Shukrinov, Yu M [BLTP, JINR, Dubna, Moscow Region, 141980 (Russian Federation); Mahfouzi, F [Institute for Advanced Studies in Basic Sciences, PO Box 45195-1159, Zanjan (Iran, Islamic Republic of)

    2007-02-15

    We study branching in the current-voltage characteristics of the intrinsic Josephson junctions of high-temperature superconductors in the framework of the capacitively coupled Josephson junction model with diffusion current. A system of dynamical equations for the gauge-invariant phase differences between superconducting layers for a stack of ten intrinsic junctions has been numerically solved. We have obtained a total branch structure in the current-voltage characteristics. We demonstrate the existence of a 'breakpoint region' on the current-voltage characteristics and explain it as a result of resonance between Josephson and plasma oscillations. The effect of the boundary conditions is investigated. The existence of two outermost branches and correspondingly two breakpoint regions for the periodic boundary conditions is shown. One branch, which is observed only at periodic boundary conditions, corresponds to the propagating of the plasma mode. The second one corresponds to the situation when the charge oscillations on the superconducting layers are absent, excluding the breakpoint. A time dependence of the charge oscillations at breakpoints is presented.

  7. Branching in current voltage characteristics of intrinsic Josephson junctions

    Science.gov (United States)

    Shukrinov, Yu M.; Mahfouzi, F.

    2007-02-01

    We study branching in the current-voltage characteristics of the intrinsic Josephson junctions of high-temperature superconductors in the framework of the capacitively coupled Josephson junction model with diffusion current. A system of dynamical equations for the gauge-invariant phase differences between superconducting layers for a stack of ten intrinsic junctions has been numerically solved. We have obtained a total branch structure in the current-voltage characteristics. We demonstrate the existence of a 'breakpoint region' on the current-voltage characteristics and explain it as a result of resonance between Josephson and plasma oscillations. The effect of the boundary conditions is investigated. The existence of two outermost branches and correspondingly two breakpoint regions for the periodic boundary conditions is shown. One branch, which is observed only at periodic boundary conditions, corresponds to the propagating of the plasma mode. The second one corresponds to the situation when the charge oscillations on the superconducting layers are absent, excluding the breakpoint. A time dependence of the charge oscillations at breakpoints is presented.

  8. Current-voltage characteristics of borophene and borophane sheets.

    Science.gov (United States)

    Izadi Vishkayi, Sahar; Bagheri Tagani, Meysam

    2017-08-16

    Motivated by recent experimental and theoretical research on a monolayer of boron atoms, borophene, the current-voltage characteristics of three different borophene sheets, 2Pmmn, 8Pmmn, and 8Pmmm, are calculated using density functional theory combined with the nonequilibrium Green's function formalism. Borophene sheets with two and eight atoms in a unit cell are considered. Their band structure, electron density, and structural anisotropy are analyzed in detail. The results show that the 8Pmmn and 8Pmmm structures that have eight atoms in the unit cell have less anisotropy than 2Pmmn. In addition, although 8Pmmn shows a Dirac cone in the band structure, its current is lower than that of the other two. We also consider a fully hydrogenated borophene, borophane, and find that the hydrogenation process reduces the structural anisotropy and the current significantly. Our findings reveal that the current-voltage characteristics of the borophene sheets can be used to detect the type and the growth direction of the sample because it is strongly dependent on the direction of the electron transport, anisotropy, and details of the unit cell of the borophene.

  9. Current-voltage-temperature characteristics of DNA origami

    Energy Technology Data Exchange (ETDEWEB)

    Bellido, Edson P; Bobadilla, Alfredo D; Rangel, Norma L; Seminario, Jorge M [Department of Chemical Engineering, Texas A and M University, College Station, TX 77843 (United States); Zhong Hong; Norton, Michael L [Department of Chemistry, Marshall University, Huntington, WV 25755 (United States); Sinitskii, Alexander [Department of Chemistry, Rice University, Houston, TX 77005 (United States)

    2009-04-29

    The temperature dependences of the current-voltage characteristics of a sample of triangular DNA origami deposited in a 100 nm gap between platinum electrodes are measured using a probe station. Below 240 K, the sample shows high impedance, similar to that of the substrate. Near room temperature the current shows exponential behavior with respect to the inverse of temperature. Sweep times of 1 s do not yield a steady state; however sweep times of 450 s for the bias voltage secure a steady state. The thermionic emission and hopping conduction models yield similar barriers of {approx}0.7 eV at low voltages. For high voltages, the hopping conduction mechanism yields a barrier of 0.9 eV and the thermionic emission yields 1.1 eV. The experimental data set suggests that the dominant conduction mechanism is hopping in the range 280-320 K. The results are consistent with theoretical and experimental estimates of the barrier for related molecules.

  10. Improved analytical current voltage characteristics of a solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Yli-Koski, M.; Tuominen, E.; Acerbis, M.; Sinkkonen, J.

    1997-12-31

    Application of the Green`s function method to the calculation of the current voltage characteristics of a pn-junction solar cell makes possible to extract more reliable and exact information about the behavior of the cell. With this method not only the minority carrier diffusion currents but also the drift currents in quasi- neutral regions of the solar cell can be taken into consideration. Furthermore, this approach is not limited to an exponentially decaying minority carrier generation function but is valid for any type of optical generation. In addition, the injection boundary condition is exploited with the result that not only the pn-diode current but also the current resulting from the optical generation depends on the voltage of the solar cell. Applying the method also gives the so called position dependent collection efficiency function which is defined as the probability that an electron-hole pair created at a certain point inside the solar cell will contribute to the current leaving the cell. (orig.) 15 refs.

  11. Structure of the breakpoint region on current-voltage characteristics of intrinsic Josephson junctions

    Science.gov (United States)

    Shukrinov, Yu. M.; Mahfouzi, F.; Suzuki, M.

    2008-10-01

    A fine structure of the breakpoint region in the current-voltage characteristics of the coupled intrinsic Josephson junctions in the layered superconductors is found. We establish a correspondence between the features in the current-voltage characteristics and the character of the charge oscillations in superconducting layers in the stack and explain the origin of the breakpoint region structure.

  12. Solar Cell Parameters Extraction from a Current-Voltage Characteristic Using Genetic Algorithm

    Directory of Open Access Journals (Sweden)

    Sanjaykumar J. Patel

    2013-05-01

    Full Text Available The determination of solar cell parameters is very important for the evaluation of the cell performance as well as to extract maximum possible output power from the cell. In this paper, we propose a computational based binary-coded genetic algorithm (GA to extract the parameters (I0, Iph and n for a single diode model of solar cell from its current-voltage (I-V characteristic. The algorithm was implemented using LabVIEW as a programming tool and validated by applying it to the I-V curve synthesized from the literature using reported values. The values of parameters obtained by GA are in good agreement with those of the reported values for silicon and plastic solar cells. change to “After the validation of the program, it was used to extract parameters for an experimental I-V characteristic of 4 × 4 cm2 polycrystalline silicon solar cell measured under 900 W/m. The I-V characteristic obtained using GA shows excellent match with the experimental one.

  13. Electrical Conductivity and Current-Voltage Characteristics of Individual Conducting Polymer PEDOT Nanowires

    Institute of Scientific and Technical Information of China (English)

    LONG Yun-Ze; DUVAIL Jean-Luc; CHEN Zhao-Jia; JIN Ai-Zi; GU Chang-Zhi

    2008-01-01

    We report the current-voltage (I-V) characteristics and electrical conductivity of individual template-synthesized poly(3,4-ethylenedioxythiophene) (PEDOT) nanowires (190 ± 6 nm in diameter and σRT : 11.2±2Ω-1cm-1)over a wide temperature range from 300 to 10K. With lowering temperature, the Ⅰ- Ⅴ characteristics become nonlinear around 50 K, and a clear Coulomb gap-like structure appears in the differential conductance (dI/dV)spectra. The temperature dependence of the resistance below 70 K follows ln R ∝ T-1/2, which can be interpreted as Efros-Shklovskii hopping conduction in the presence of a Coulomb gap. In addition, the influences of measurement methods such as the applied bias voltage magnitude, the two-probe and four-probe techniques used in the resistance measurements are also reported and discussed.

  14. Current-voltage characteristic of a resonant tunneling diode under electromagnetic radiation

    Directory of Open Access Journals (Sweden)

    N Hatefi Kargan

    2013-09-01

    Full Text Available  In this paper, current-voltage characteristic of a resonant tunneling diode under electromagnetic radiation has been calculated and compared with the results when there is no electromagnetic radiation. For calculating current -voltage characteristic, it is required to calculate the transmission coefficient of electrons from the well and barrier structures of this device. For calculating the transmission coefficient of electrons at the presence of electromagnetic radiation, Finite Difference Time Domain (FDTD method has been used and when there is no electromagnetic radiation Transfer Matrix Method (TMM and finite diffirence time domain method have been used. The results show that the presence of electromagnetic radiation causes resonant states other than principal resonant state (without presence of electromagnetic radiation to appear on the transmition coefficient curve where they are in distances from the principal peak and from each other. Also, the presence of electromagnetic radiation causes peaks other than principal peak to appear on the current-voltage characteristics of the device. Under electromagnetic radiation, the number of peaks on the current-voltage curve is smaller than the number of peaks on the current-voltage transmission coefficient. This is due to the fact that current-voltage curve is the result of integration on the energy of electrons, Thus, the sharper and low height peaks on the transmission coefficient do not appear on the current-voltage characteristic curve.

  15. Current-voltage characteristic of a resonant tunneling diode under electromagnetic radiation

    National Research Council Canada - National Science Library

    N Hatefi Kargan

    2013-01-01

    In this paper, current-voltage characteristic of a resonant tunneling diode under electromagnetic radiation has been calculated and compared with the results when there is no electromagnetic radiation...

  16. Classification of methods for measuring current-voltage characteristics of semiconductor devices

    Directory of Open Access Journals (Sweden)

    Iermolenko Ia. O.

    2014-06-01

    Full Text Available It is shown that computer systems for measuring current-voltage characteristics are very important for semiconductor devices production. The main criteria of efficiency of such systems are defined. It is shown that efficiency of such systems significantly depends on the methods for measuring current-voltage characteristics of semiconductor devices. The aim of this work is to analyze existing methods for measuring current-voltage characteristics of semiconductor devices and to create the classification of these methods in order to specify the most effective solutions in terms of defined criteria. To achieve this aim, the most common classifications of methods for measuring current-voltage characteristics of semiconductor devices and their main disadvantages are considered. Automated and manual, continuous, pulse, mixed, isothermal and isodynamic methods for measuring current-voltage characteristics are analyzed. As a result of the analysis and generalization of existing methods the next classification criteria are defined: the level of automation, the form of measurement signals, the condition of semiconductor device during the measurements, and the use of mathematical processing of the measurement results. With the use of these criteria the classification scheme of methods for measuring current-voltage characteristics of semiconductor devices is composed and the most effective methods are specified.

  17. Current-Voltage Characteristics of Molecular Devices at Low Bias

    Institute of Scientific and Technical Information of China (English)

    LIAO Yun-Xing; CHEN Hao; R.Note; H.Mizuseki; Y.Kawazoe

    2004-01-01

    We use density functional theory and the Green function formalism with charge energy effect included in the self-consistent calculation of the Ⅰ- Ⅴ characteristics of a single benzene ring with an appendage of cf3, and identify some interesting properties of the Ⅰ-Ⅴ characteristics at low bias. The molecule picks up a fractional charge at zero bias, then the additional fractional charge produces a barrier on the junction of the molecule and contacts to perturb current flow on the molecule. This phenomenon may be useful for the design of future molecular devices.

  18. Effect of current-voltage characteristics on plasma reforming

    Energy Technology Data Exchange (ETDEWEB)

    Hwang, N. [Univ. of Science and Technology, Daejeon (Korea, Republic of). Environmental System Engineering; Korea Inst. of Machinery and Materials, Daejeon (Korea, Republic of). Environmental System Research Division; Hur, M.; Kim, K.T.; Kim, S.J.; Song, Y.H. [Korea Inst. of Machinery and Materials, Daejeon (Korea, Republic of). Environmental System Research Division

    2010-07-01

    Studies have shown that the energy costs associated with plasma fuel reforming can vary depending on the type of plasma generation technique. The reasons for the different energy costs, however, are not yet clear, since different types of plasma reactor lead to not only different plasma conditions but also lead to different reaction conditions that is not relevant to plasma, such as gas residence time, heat and mass flow conditions. This paper presented the results of a parametric study on methane partial oxidation which was conducted to determine the optimal operating conditions and geometrical design of an arc jet plasma fuel reformer. The arc reactor used in this study was designed to control various operating parameters such as arc length, gas residence time, and gas mixing. Two different types of power supply were tested, notably one that produced high voltage with low current, and one that produced relatively low voltage and high current. The effects of these different voltage-current characteristics on gas reforming process were analyzed based on methane conversion rates, selectivity of products, and thermal efficiencies. The study showed that the input power but not the voltage plays an important role in the present partial oxidation process. The gas residence time was also found to be an important factor in controlling the reformer process. 10 refs., 8 figs.

  19. Morphology and current-voltage characteristics of nanostructured pentacene thin films probed by atomic force microscopy.

    Science.gov (United States)

    Zorba, S; Le, Q T; Watkins, N J; Yan, L; Gao, Y

    2001-09-01

    Atomic force microscopy was used to study the growth modes (on SiO2, MoS2, and Au substrates) and the current-voltage (I-V) characteristics of organic semiconductor pentacene. Pentacene films grow on SiO2 substrate in a layer-by-layer manner with full coverage at an average thickness of 20 A and have the highest degree of molecular ordering with large dendritic grains among the pentacene films deposited on the three different substrates. Films grown on MoS2 substrate reveal two different growth modes, snowflake-like growth and granular growth, both of which seem to compete with each other. On the other hand, films deposited on Au substrate show granular structure for thinner coverages (no crystal structure) and dendritic growth for higher coverages (crystal structure). I-V measurements were performed with a platinum tip on a pentacene film deposited on a Au substrate. The I-V curves on pentacene film reveal symmetric tunneling type character. The field dependence of the current indicates that the main transport mechanism at high field intensities is hopping (Poole-Frenkel effect). From these measurements, we have estimated a field lowering coefficient of 9.77 x 10(-6) V-1/2 m1/2 and an ideality factor of 18 for pentacene.

  20. Fault identification in crystalline silicon PV modules by complementary analysis of the light and dark current-voltage characteristics

    DEFF Research Database (Denmark)

    Spataru, Sergiu; Sera, Dezso; Hacke, Peter

    2016-01-01

    (soiling, shading, discoloration). The premise of the method that is proposed is that different degradation modes affect the light and dark I-V characteristics of the PV module in different ways, leaving distinct signatures. This work focuses on identifying and correlating these specific signatures present......This article proposes a fault identification method, based on the complementary analysis of the light and dark current-voltage (I-V) characteristics of the photovoltaic (PV) module, to distinguish between four important degradation modes that lead to power loss in PV modules: (a) degradation...... in the light and dark I-V measurements, to specific degradation modes; a number of new dark I-V diagnostic parameters are proposed to quantify these signatures. The experimental results show that these dark I-V diagnostic parameters, complemented by light I-V performance and series resistance measurements can...

  1. On Calculating the Current-Voltage Characteristic of Multi-Diode Models for Organic Solar Cells

    CERN Document Server

    Roberts, Ken

    2016-01-01

    We provide an alternative formulation of the exact calculation of the current-voltage characteristic of solar cells which have been modeled with a lumped parameters equivalent circuit with one or two diodes. Such models, for instance, are suitable for describing organic solar cells whose current-voltage characteristic curve has an inflection point, also known as an S-shaped anomaly. Our formulation avoids the risk of numerical overflow in the calculation. It is suitable for implementation in Fortran, C or on micro-controllers.

  2. Dispersion effect on the current voltage characteristic of AlGaN/GaN high electron mobility transistors

    Institute of Scientific and Technical Information of China (English)

    Pu Yan; Pang Lei; Chen Xiao-Juan; Yuan Ting-Ting; Luo Wei-Jun; Liu Xin-Yu

    2011-01-01

    The current voltage (IV) characteristics are greatly influenced by the dispersion effects in AlGaN/GaN highelectron mobility transistors. The direct current (DC) IV and pulsed IV measurements are performed to give a deep investigation into the dispersion effects,which are mainly related to the trap and self-heating mechanisms. The results show that traps play an important role in the kink effects,and high stress can introduce more traps and defects in the device. With the help of the pulsed IV measurements,the trapping effects and self-heating effects can be separated.The impact of time constants on the dispersion effects is also discussed. In order to achieve an accurate static DC IV measurement,the steady state of the bias points must be considered carefully to avoid the dispersion effects.

  3. Fault identification in crystalline silicon PV modules by complementary analysis of the light and dark current-voltage characteristics

    DEFF Research Database (Denmark)

    Spataru, Sergiu; Sera, Dezso; Hacke, Peter

    2014-01-01

    Photovoltaic system (PV) maintenance and diagnostic tools are often based on performance models of the system, complemented with light current-voltage (I-V) measurements, visual inspection and/or thermal imaging. Although these are invaluable tools in diagnosing PV system performance losses...... or contacts are damaged/degraded). With the recent growth and development of new module level dc-dc optimizers and micro inverters, capable of bidirectional current flow, it is now possible to implement both dark I-V and light I-V measurements as complementary diagnostic tools. By complementing light I-V...... measurements, which reflect both the optical and electrical performance parameters of the PV device, with dark I-V measurements, which focus only on the electrical characteristic of the PV device, the optical factors determining power loss (such as partial shadows, soiling, discoloration of the plastic...

  4. Current-voltage characteristics of bulk heterojunction organic solar cells: connection between light and dark curves

    Energy Technology Data Exchange (ETDEWEB)

    Boix, Pablo P.; Guerrero, Antonio; Garcia-Belmonte, Germa; Bisquert, Juan [Photovoltaic and Optoelectronic Devices Group, Departament de Fisica, Universitat Jaume I, ES-12071 Castello (Spain); Marchesi, Luis F. [Laboratorio Interdisciplinar de, Eletroquimica e Ceramica (LIEC), Universidade Federal de Sao Carlos (Brazil); Photovoltaic and Optoelectronic Devices Group, Departament de Fisica, Universitat Jaume I, ES-12071 Castello (Spain)

    2011-11-15

    A connection is established between recombination and series resistances extracted from impedance spectroscopy and current-voltage curves of polythiophene:fullerene organic solar cells. Recombination is shown to depend exclusively on the (Fermi level) voltage, which allows construction of the current-voltage characteristics in any required conditions based on a restricted set of measurements. The analysis highlights carrier recombination current as the determining mechanism of organic solar cell performance. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  5. Current-voltage characteristics of Pb and Sn granular superconducting nanowires

    DEFF Research Database (Denmark)

    Michotte, S.; Mátéfi-Tempfli, Stefan; Piraux, L.

    2003-01-01

    Current-voltage characteristics of Pb and Sn granular superconducting nanowires were investigated. The nanowires were prepared by electrodeposition in nanoporous membranes. It was observed that phase-slip-centers were formed far below the critical temperature when dc current was introduced inside...

  6. ELASTIC-SCATTERING AND THE CURRENT-VOLTAGE CHARACTERISTICS OF SUPERCONDUCTING NB-INAS-NB JUNCTIONS

    NARCIS (Netherlands)

    VANDERPOST, N; NITTA, J; TAKAYANAGI, H

    1993-01-01

    Superconducting niobium contacts are attached to a 0.8-mum-long epitaxially grown InAs channel sandwiched between insulating InGaAs layers. The current-voltage characteristics show nonlinearities at submultiples of the superconducting energy gap indicative of multiple-Andreev reflections. We demonst

  7. Current-voltage characteristic of parallel-plane ionization chamber with inhomogeneous ionization

    Energy Technology Data Exchange (ETDEWEB)

    Stoyanov, D G [Faculty of Engineering and Pedagogy in Sliven, Technical University of Sofia, 59, Bourgasko Shaussee Blvd, 8800 Sliven (Bulgaria)

    2007-08-15

    The balances of particles and charges in the volume of parallel-plane ionization chamber are considered. Differential equations describing the distribution of current densities in the chamber volume are obtained. As a result of the differential equations solution an analytical form of the current-voltage characteristic of parallel-plane ionization chamber with inhomogeneous ionization in the volume is obtained.

  8. Current-voltage characteristic of parallel-plane ionization chamber with inhomogeneous ionization

    CERN Document Server

    Stoyanov, Dimitar G

    2007-01-01

    The balances of particles and charges in the volume of parallel-plane ionization chamber are considered. Differential equations describing the distribution of current densities in the chamber volume are obtained. As a result of the differential equations solution an analytical form of the current-voltage characteristic of parallel-plane ionization chamber with inhomogeneous ionization in the volume is got.

  9. Effects of hydrogen bonding on current-voltage characteristics of molecular junctions

    Science.gov (United States)

    Kula, Mathias; Jiang, Jun; Lu, Wei; Luo, Yi

    2006-11-01

    We present a first-principles study of hydrogen bonding effect on current-voltage characteristics of molecular junctions. Three model charge-transfer molecules, 2'-amino-4,4'-di(ethynylphenyl)-1-benzenethiolate (DEPBT-D), 4,4'-di(ethynylphenyl)-2'-nitro-1-benzenethiolate (DEPBT-A), and 2'-amino-4,4'-di(ethynylphenyl)-5'-nitro-1-benzenethiolate (DEPBT-DA), have been examined and compared with the corresponding hydrogen bonded complexes formed with different water molecules. Large differences in current-voltage characteristics are observed for DEPBT-D and DEPBT-A molecules with or without hydrogen bonded waters, while relatively small differences are found for DEPBT-DA. It is predicted that the presence of water clusters can drastically reduce the conductivities of the charge-transfer molecules. The underlying microscopic mechanism has been discussed.

  10. The Current-voltage Characteristics Simulation of the Betavoltaic Power Supply

    Directory of Open Access Journals (Sweden)

    S.U. Urchuk

    2015-12-01

    Full Text Available In order to optimize betavoltaic power supply it was calculated the current-voltage characteristics when changing the depth of the upper p-layer and at changing doping levels structure areas. It is shown that an increase in the depth reduces the short-circuit current and thus reduces the open circuit voltage. It has been observed that the concentration of the lightly doped region more significantly influence on the current-voltage characteristics than the depth of the p-n-junction. The concentration of the n-region, equal to 1014 cm – 3, can be considered as during betavoltaic power supply design. It is shown that, by increasing the power supply activity the conversion efficiency of the structure increases, too.

  11. Closed-form expression for the current/ voltage characteristics of pin solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Taretto, K.; Rau, U.; Werner, J.H. [Institut fuer Physikalische Elektronik, Pfaffenwaldring 47, 70569, Stuttgart (Germany)

    2003-12-01

    A closed-form expression for the current-voltage relationship of pin diodes and pin solar cells is obtained. The model considers drift and diffusion currents, and assumes a uniform electric field in the intrinsic layer, equal diffusion lengths for electrons and holes and a homogeneous generation rate. We show that both drift and diffusion currents must be taken into account to describe the current over a wide range of applied voltage. The inclusion of both transport mechanisms results in diode ideality factors between 1.8 at low, and 1.2 at high applied voltages. Comparisons of current/voltage characteristics and solar cell output parameters obtained from our model with experimental data of thin-film silicon solar cells show that our model accurately explains the output characteristics of pin solar cells. (orig.)

  12. Master Equation Approach to Current-Voltage Characteristics of Solar Cells

    Science.gov (United States)

    Oh, Sangchul; Zhang, Yiteng; Alharbi, Fahhad; Kais, Sabre

    2015-03-01

    The current-voltage characteristics of solar cells is obtained using quantum master equations for electrons, holes, and excitons, in which generation, recombination, and transport processes are taken into account. As a first example, we simulate a photocell with a molecular aggregate donor to investigate whether a delocalized quantum state could enhance the efficiency. As a second example, we calculate the current-voltage characteristics of conventional p-n junction solar cells and perovskite solar cells using the master equation. The connection between the drift-diffusion model and the master equation method is established. The short-circuit current and the open-circuit voltage are calculated numerically as a function of the intensity of the sunlight and material properties such as energy gaps, diffusion constants, etc.

  13. Analytical form of current-voltage characteristic of cylindrical and spherical ionization chambers

    CERN Document Server

    Stoyanov, Dimitar G

    2007-01-01

    The basic processes of ionization and recombination of gas-filled ionization chamber are presented in this article. A differential equation describing the distribution of current densities in the volume of the ionization chamber is obtained from the balance of the particles and charges densities. As a result of the differential equation solving an analytical form of the current-voltage characteristic of cylindrical and spherical ionization chambers is got.

  14. A simple approximation for the current-voltage characteristics of high-power, relativistic diodes

    Science.gov (United States)

    Ekdahl, Carl

    2016-06-01

    A simple approximation for the current-voltage characteristics of a relativistic electron diode is presented. The approximation is accurate from non-relativistic through relativistic electron energies. Although it is empirically developed, it has many of the fundamental properties of the exact diode solutions. The approximation is simple enough to be remembered and worked on almost any pocket calculator, so it has proven to be quite useful on the laboratory floor.

  15. Simulation of a perfect CVD diamond Schottky diode steep forward current-voltage characteristic

    Science.gov (United States)

    Kukushkin, V. A.

    2016-10-01

    The kinetic equation approach to the simulation of the perfect CVD diamond Schottky diode current-voltage characteristic is considered. In result it is shown that the latter has a significantly steeper forward branch than that of perfect devices of such a type on usual semiconductors. It means that CVD diamond-based Schottky diodes have an important potential advantage over analogous devices on conventional materials.

  16. NONLINEAR CURRENT-VOLTAGE CHARACTERISTICS OF CONDUCTIVE POLYETHYLENE COMPOSITES WITH CARBON BLACK FILLED PET MICROFIBRILS

    Institute of Scientific and Technical Information of China (English)

    Qian-ying Chen; Jing Gao; Kun Dai; Huan Pang; Jia-zhuang Xu; Jian-hua Tang; Zhong-ming Li

    2013-01-01

    Current-voltage electrical behavior of in situ microfibrillar carbon black (CB)/poly(ethylene terephthalate)(PET)/polyethylene (PE) (m-CB/PET/PE) composites with various CB concentrations at ambient temperatures was studied under a direct-current electric field.The current-voltage (Ⅰ-Ⅴ) curves exhibited nonlinearity beyond a critical value of voltage.The dynamic random resistor network (DRRN) model was adopted to semi-qualitatively explain the nonlinear conduction behavior of m-CB/PET/PE composites.Macroscopic nonlinearity originated from the interracial interactions between CB/PET micro fibrils and additional conduction channels.Combined with the special conductive networks,an illustration was proposed to interpret the nonlinear Ⅰ-Ⅴ characteristics by a field emission or tunneling mechanism between CB particles in the CB/PET microfibers intersections.

  17. Comment on "Electrical Conductivity and Current-Voltage Characteristics of Individual Conducting Polymer PEDOT Nanowires"

    Institute of Scientific and Technical Information of China (English)

    P. Ohlckers; P. Pipinys

    2009-01-01

    @@ In "Electrical Conductivity and Current-Voltage Characteristics of Individual Conducting Polymer PEDOT Nanowires", Long et al.[1] reported the currentvoltage ( Ⅰ - Ⅴ) characteristics of individual poly(3,4-ethylenedioxythiophene) (PEDOT) nanowires in the temperature range from 20 to 50K (Fig. 2(a)). The authors stated that at temperatures equal to 50 K and higher, the Ⅰ - Ⅴ curves were linear. With decreasing temperature the Ⅰ - Ⅴ curves gradually became nonlinear. The temperature behavior of Ⅰ - Ⅴ characteristics is not suitably explained.

  18. Modelling of Chirality-Dependent Current-Voltage Characteristics of Carbon-Nanotube Field-Effect Transistors

    Institute of Scientific and Technical Information of China (English)

    ZHAO Xu; WANG Yan; YU Zhi-Ping

    2006-01-01

    @@ Current-voltage characteristics of ballistic carbon-nanotube field-effect transistors are characterized with an it-erative simulation program. The influence of carbon-nanotube chirality and diameter on the output current is considered. An analytical current-voltage expression under the quantum capacitance limit and low-voltage application is derived. Our simulation results are compared with actual measurement data.

  19. Current voltage characteristics of intrinsic Josephson junctions with charge-imbalance effect

    Science.gov (United States)

    Shukrinov, Yu. M.; Mahfouzi, F.

    2007-09-01

    The current-voltage characteristics (IVC) of intrinsic Josephson junctions are numerically calculated taking into account the quasiparticle charge-imbalance effect. We solve numerically the full set of the equations including second order differential equations for phase differences, kinetic equations and generalized Josephson relations for a stack of Josephson junctions. The boundary conditions due to the proximity effect are used. We obtain the branch structure of IVC and investigate it as a function of disequilibrium parameter at different values of coupling constant and McCumber parameter. An increase in the disequilibrium parameter essentially changes the character of IVC at large values of McCumber parameter.

  20. The influence of microwave irradiation power on current voltage characteristics of intrinsic Josephson junctions

    Science.gov (United States)

    Shukrinov, Yu M.; Mans, M.; Scherbel, J.; Seidel, P.

    2007-02-01

    The current-voltage characteristics of a micrometre bridge of intrinsic Josephson junctions under microwave irradiation are studied. The collective switching of the group of four junctions splits up as the AC signal amplitude is gradually increased. The switching current of the remaining group of junctions is increased with increasing radiation power. We consider that microwave irradiation injects an additional quasiparticle current into the Josephson junction array. We use ideas of breakdown of quasineutrality and quasiparticle charge imbalance in the superconducting layers and explain the experimental results by the competition between the 'current effect' and the effect of suppression of the switching current by irradiation.

  1. Current-voltage characteristics of intrinsic Josephson junctions with charge-imbalance effect

    Energy Technology Data Exchange (ETDEWEB)

    Shukrinov, Yu.M. [Joint Institute for Nuclear Research, 141980 Dubna (Russian Federation); Physical Technical Institute, Dushanbe 734063 (Tajikistan)], E-mail: shukrinv@theor.jinr.ru; Mahfouzi, F. [Institute for Advanced Studies in Basic Sciences, P.O. Box 45195-1159, Zanjan (Iran, Islamic Republic of)

    2007-09-01

    The current-voltage characteristics (IVC) of intrinsic Josephson junctions are numerically calculated taking into account the quasiparticle charge-imbalance effect. We solve numerically the full set of the equations including second order differential equations for phase differences, kinetic equations and generalized Josephson relations for a stack of Josephson junctions. The boundary conditions due to the proximity effect are used. We obtain the branch structure of IVC and investigate it as a function of disequilibrium parameter at different values of coupling constant and McCumber parameter. An increase in the disequilibrium parameter essentially changes the character of IVC at large values of McCumber parameter.

  2. The influence of microwave irradiation power on current-voltage characteristics of intrinsic Josephson junctions

    Energy Technology Data Exchange (ETDEWEB)

    Shukrinov, Yu M [BLTP, JINR, Dubna, Moscow Region, 141980 (Russian Federation); Mans, M [Institut fur Festkoerperphysik, Friedrich-Schiller-Universitaet Jena, D-07743 Jena (Germany); Scherbel, J [Institut fur Festkoerperphysik, Friedrich-Schiller-Universitaet Jena, D-07743 Jena (Germany); Seidel, P [Institut fur Festkoerperphysik, Friedrich-Schiller-Universitaet Jena, D-07743 Jena (Germany)

    2007-02-15

    The current-voltage characteristics of a micrometre bridge of intrinsic Josephson junctions under microwave irradiation are studied. The collective switching of the group of four junctions splits up as the AC signal amplitude is gradually increased. The switching current of the remaining group of junctions is increased with increasing radiation power. We consider that microwave irradiation injects an additional quasiparticle current into the Josephson junction array. We use ideas of breakdown of quasineutrality and quasiparticle charge imbalance in the superconducting layers and explain the experimental results by the competition between the 'current effect' and the effect of suppression of the switching current by irradiation.

  3. Experimental manifestation of the breakpoint region in the current-voltage characteristics of intrinsic Josephson junctions

    OpenAIRE

    Irie, A.; Shukrinov, Yu M.; Oya, G.

    2008-01-01

    The experimental evidence of the breakpoint on the current-voltage characteristics (IVCs) of the stacks of intrinsic Josephson junctions (IJJs) is presented. The influence of the capacitive coupling on the IVCs of Bi$_2$Sr$_2$CaCu$_2$O$_y$ IJJs has been investigated. At 4.2 K, clear breakpoint region is observed on the branches in the IVCs. It is found that the hysteresis observed on the IVC is suppressed due to the coupling compared with that expected from the McCumber parameter. Measurement...

  4. Experimental manifestation of the breakpoint region in the current-voltage characteristics of intrinsic Josephson junctions

    Science.gov (United States)

    Irie, A.; Shukrinov, Yu. M.; Oya, G.

    2008-10-01

    The experimental evidence of the breakpoint on the current-voltage characteristics (IVCs) of the stacks of intrinsic Josephson junctions (IJJs) is presented. The influence of the capacitive coupling on the IVCs of Bi2Sr2CaCu2Oy IJJs has been investigated. At 4.2K, clear breakpoint region is observed on the branches in the IVCs. It is found that due to the coupling between junctions, the hysteresis observed on the IVC is small compared to that expected from the McCumber parameter. Measurements agree well with the results predicted by the capacitively coupled Josephson junction model including the diffusion current.

  5. Impurity Deionization Effects on Surface Recombination DC Current-Voltage Characteristics in MOS Transistors

    Energy Technology Data Exchange (ETDEWEB)

    Chen Zuhui [Lee-Kuan-Yew Postdoctoral Fellow, 2007-2010, Nanyang Technological University, Singapore 639798 (Singapore); Jie Binbin; Sah Chihtang, E-mail: bb_jie@msn.com [Department of Physics, Xiamen University, Xiamen 361005 (China)

    2010-12-15

    Impurity deionization on the direct-current current-voltage characteristics from electron-hole recombination (R-DCIV) at SiO{sub 2}/Si interface traps in MOS transistors is analyzed using the steady-state Shockley-Read-Hall recombination kinetics and the Fermi distributions for electrons and holes. Insignificant distortion is observed over 90% of the bell-shaped R-DCIV curves centered at their peaks when impurity deionization is excluded in the theory. This is due to negligible impurity deionization because of the much lower electron and hole concentrations at the interface than the impurity concentration in the 90% range. (invited papers)

  6. Effect of spontaneous polarization change on current-voltage characteristics of thin ferroelectric films

    Science.gov (United States)

    Podgorny, Yu. V.; Lavrov, P. P.; Vorotilov, K. A.; Sigov, A. S.

    2015-03-01

    The role of a change in the spontaneous polarization charge in the formation of negative differential conductance regions of the current-voltage characteristics of thin ferroelectric films has been determined. It has been shown that the polarization recovery current, which appears due to partial depolarization of a preliminarily polarized film, prevails over the intrinsic leakage current of the ferroelectric film in the coercive field region and corresponds to the Weibull distribution. The influence of polarization recovery current decreases with decreasing voltage sweep rate.

  7. Current-voltage characteristics of an individual helical CdS nanowire rope

    Institute of Scientific and Technical Information of China (English)

    Long Yun-Ze; Wang Wen-Long; Bai Feng-Lian; Chen Zhao-Jia; Jin Ai-Zi; Gu Chang-Zhi

    2008-01-01

    This paper studies the electronic transport in an individual helically twisted CdS nanowire rope, on which platinum microleacls are attached by focused-ion beam deposition. The current-voltage (Ⅰ - Ⅴ ) characteristics are nonlinear from 300 down to 60 K. Some step-like structures in the Ⅰ - Ⅴ curves and oscillation peaks in the differential conductance (dⅠ/dⅤ - Ⅴ) curves have been observed even at room temperature. It proposes that the observed behaviour can be attributed to Coulomb-blockade transport in the one-dimensional CdS nanowires with diameters of 6-10 nm.

  8. Inhomogeneous barrier height effect on the current-voltage characteristics of an Au/n-InP Schottky diode

    Science.gov (United States)

    Zeghdar, Kamal; Dehimi, Lakhdar; Saadoune, Achour; Sengouga, Nouredine

    2015-12-01

    We report the current-voltage (I-V) characteristics of the Schottky diode (Au/n-InP) as a function of temperature. The SILVACO-TCAD numerical simulator is used to calculate the I-V characteristic in the temperature range of 280-400 K. This is to study the effect of temperature on the I-V curves and assess the main parameters that characterize the Schottky diode such as the ideality factor, the height of the barrier and the series resistance. The I-V characteristics are analyzed on the basis of standard thermionic emission (TE) theory and the inhomogeneous barrier heights (BHs) assuming a Gaussian distribution. It is shown that the ideality factor decreases while the barrier height increases with increasing temperature, on the basis of TE theory. Furthermore, the homogeneous BH value of approximately 0.524 eV for the device has been obtained from the linear relationship between the temperature-dependent experimentally effective BHs and ideality factors. The modified Richardson plot, according to the inhomogeneity of the BHs, has a good linearity over the temperature range. The evaluated Richardson constant A* was 10.32 A·cm-2·K-2, which is close to the theoretical value of 9.4 A·cm-2·K-2 for n-InP. The temperature dependence of the I-V characteristics of the Au/n-InP Schottky diode have been successfully explained on the basis of the thermionic emission (TE) mechanism with a Gaussian distribution of the Schottky barrier heights (SBHs). Simulated I-V characteristics are in good agreement with the measurements [Korucu D, Mammadov T S. J Optoelectronics Advanced Materials, 2012, 14: 41]. The barrier height obtained using Gaussian Schottky barrier distribution is 0.52 eV, which is about half the band gap of InP.

  9. Current-voltage characteristics of light-emitting diodes under optical and electrical excitation

    Institute of Scientific and Technical Information of China (English)

    Wen Jing; Wen Yumei; Li Ping; Li Lian

    2011-01-01

    The factors influencing the current-voltage (Ⅰ-Ⅴ) characteristics of light-emitting diodes (LEDs) are investigated to reveal the connection of Ⅰ-Ⅴ characteristics under optical excitation and those under electrical excitation.By inspecting the Ⅰ-Ⅴ curves under optical and electrical excitation at identical injection current,it has been found that the Ⅰ-Ⅴ curves exhibit apparent differences in voltage values.Furthermore,the differences are found to originate from the junction temperatures in diverse excitation ways.Experimental results indicate that if the thermal effect of illuminating spot is depressed to an ignorable extent by using pulsed light,the junction temperature will hardly deflect from that under optical excitation,and then the Ⅰ-Ⅴ characteristics under two diverse excitation ways will be the same.

  10. Influence of coupling parameter on current-voltage characteristics of intrinsic Josephson junctions in high-T {sub c} superconductors

    Energy Technology Data Exchange (ETDEWEB)

    Shukrinov, Yu.M. [BLTP, JINR, Moscow Region, Dubna 141980 (Russian Federation) and Physical Technical Institute, Dushanbe 734063 (Tajikistan)]. E-mail: shukrinv@theor.jinr.ru; Mahfouzi, F. [Institute for Advanced Studies in Basic Sciences, P.O. Box 45195-1159, Zanjan (Iran, Islamic Republic of)

    2006-02-01

    We study the current-voltage characteristics of intrinsic Josephson junctions in high-T {sub c} superconductors by numerical calculations and in framework of capacitively coupled Josephson junctions model we obtain the total number of branches. The influence of the coupling parameter {alpha} on the current-voltage characteristics at fixed parameter {beta} ({beta} {sup 2} 1/{beta} {sub c}, where {beta} {sub c} is McCumber parameter) and the influence of {alpha} on {beta}-dependence of the current-voltage characteristics are investigated. We obtain the {alpha}-dependence of the branch's slopes and branch's endpoints. The presented results show new features of the coupling effect on the scheme of hysteresis jumps in current-voltage characteristics of intrinsic Josephson junctions in high-T {sub c} superconductors.

  11. Influence of coupling parameter on current-voltage characteristics of intrinsic Josephson junctions in high- Tc superconductors

    Science.gov (United States)

    Shukrinov, Yu. M.; Mahfouzi, F.

    2006-02-01

    We study the current-voltage characteristics of intrinsic Josephson junctions in high-Tc superconductors by numerical calculations and in framework of capacitively coupled Josephson junctions model we obtain the total number of branches. The influence of the coupling parameter α on the current-voltage characteristics at fixed parameter β (β2 = 1/βc, where βc is McCumber parameter) and the influence of α on β-dependence of the current-voltage characteristics are investigated. We obtain the α-dependence of the branch's slopes and branch's endpoints. The presented results show new features of the coupling effect on the scheme of hysteresis jumps in current-voltage characteristics of intrinsic Josephson junctions in high-Tc superconductors.

  12. Investigation of Current-Voltage Characteristics of Ni/GaN Schottky Barrier Diodes for Potential HEMT Applications

    Directory of Open Access Journals (Sweden)

    Ashish Kumar

    2011-01-01

    Full Text Available In the present work, the I-V characteristics of Ni/GaN Schottky diodes have been studied. The Schottky diodes, having different sizes using Ni/Au and ohmic contacts using Ti/Al/Ni/Au were made on n-GaN. The GaN was epitaxially grown on c-plane sapphire by metal organic chemical vapor deposition (MOCVD technique and had a thickness of about 3.7 µm. The calculated ideality factor and barrier height from current-voltage (I-V characteristics (at 300 K for two GaN Schottky diodes were close to ~1.3 and ~ 0.8 eV respectively. A high reverse leakage current in the order of 10 – 4A/cm2 (at – 1 V was observed in both diodes. A careful analysis of forward bias I-V characteristics showed very high series resistance and calculation for ideality factor indicated presence of other current transport mechanism apart from thermionic model at room temperature.

  13. Current-voltage characteristics in macroporous silicon/SiOx/SnO2:F heterojunctions.

    Science.gov (United States)

    Garcés, Felipe A; Urteaga, Raul; Acquaroli, Leandro N; Koropecki, Roberto R; Arce, Roberto D

    2012-07-25

    We study the electrical characteristics of macroporous silicon/transparent conductor oxide junctions obtained by the deposition of fluorine doped-SnO2 onto macroporous silicon thin films using the spray pyrolysis technique. Macroporous silicon was prepared by the electrochemical anodization of a silicon wafer to produce pore sizes ranging between 0.9 to 1.2 μm in diameter. Scanning electronic microscopy was performed to confirm the pore filling and surface coverage. The transport of charge carriers through the interface was studied by measuring the current-voltage curves in the dark and under illumination. In the best configuration, we obtain a modest open-circuit voltage of about 70 mV and a short-circuit current of 3.5 mA/cm2 at an illumination of 110 mW/cm2. In order to analyze the effects of the illumination on the electrical properties of the junction, we proposed a model of two opposing diodes, each one associated with an independent current source. We obtain a good accordance between the experimental data and the model. The current-voltage curves in illuminated conditions are well fitted with the same parameters obtained in the dark where only the photocurrent intensities in the diodes are free parameters.

  14. Measurement system for determination of current-voltage characteristics of PV modules

    Science.gov (United States)

    Idzkowski, Adam; Walendziuk, Wojciech; Borawski, Mateusz; Sawicki, Aleksander

    2015-09-01

    The realization of a laboratory stand for testing photovoltaic panels is presented here. The project of the laboratory stand was designed in SolidWorks software. The aim of the project was to control the electrical parameters of a PV panel. For this purpose a meter that measures electrical parameters i.e. voltage, current and power, was realized. The meter was created with the use of LabJack DAQ device and LabVIEW software. The presented results of measurements were obtained in different conditions (variable distance from the source of light, variable tilt angle of the panel). Current voltage characteristics of photovoltaic panel were created and all parameters could be detected in different conditions. The standard uncertainties of sample voltage, current, power measurements were calculated. The paper also gives basic information about power characteristics and efficiency of a solar cell.

  15. Phase-field modeling of switchable diode-like current-voltage characteristics in ferroelectric BaTiO3

    Science.gov (United States)

    Cao, Y.; Shen, J.; Randall, C. A.; Chen, L. Q.

    2014-05-01

    A self-consistent model has been proposed to study the switchable current-voltage (I-V) characteristics in Cu/BaTiO3/Cu sandwiched structure combining the phase-field model of ferroelectric domains and diffusion equations for ionic/electronic transport. The electrochemical transport equations and Ginzburg-Landau equations are solved using the Chebyshev collocation algorithm. We considered a single parallel plate capacitor configuration which consists of a single layer BaTiO3 containing a single tetragonal domain orientated normal to the plate electrodes (Cu) and is subject to a sweep of ac bias from -1.0 to 1.0 V at 25 °C. Our simulation clearly shows rectifying I-V response with rectification ratios amount to 102. The diode characteristics are switchable with an even larger rectification ratio after the polarization direction is flipped. The effects of interfacial polarization charge, dopant concentration, and dielectric constant on current responses were investigated. The switchable I-V behavior is attributed to the polarization bound charges that modulate the bulk conduction.

  16. Temperature-dependent current-voltage characteristics of niobium SNIS Josephson junctions

    Energy Technology Data Exchange (ETDEWEB)

    Lacquaniti, V; Andreone, D; Cassiago, C; De Leo, N; Fretto, M; Sosso, A [National Institute of Metrological Research, Electromagnetism Division, Strada delle Cacce 91, 10135 Torino (Italy); Belogolovskii, M, E-mail: v.lacquaniti@inrim.i [Donetsk Physical and Technical Institute, National Academy of Sciences of Ukraine, Str. Rosa Luxemburg. 72, 83114 Donetsk (Ukraine)

    2010-06-01

    Motivated by a search for a suitable technology to fabricate Josephson junctions with a tunable damping regime, we performed a systematic study of the temperature effect on the critical current in Nb/Al-AlO{sub x}-Nb heterostructures with a nanometer-thick Al interlayer. For Al layer thicknesses ranging from 40 to 110 nm, we have observed a transition from hysteretic (below 4.2 K) to non-hysteretic (above 4.2 K) current-voltage curves. Measured supercurrent-vs-temperature characteristics which significantly differ from those of traditional SIS and SNS devices are interpreted in terms of the superconducting proximity effect between Al and Nb films. Thermal stability and good reproducibility of our junctions are demonstrated.

  17. Luminescence, radiative recombination, and current voltage characteristics in sensitized TiO2 solar cells

    Science.gov (United States)

    Smestad, Greg P.

    1992-12-01

    A connection is made between the luminescence or radiative recombination in an absorber material and the current voltage characteristics of a quantum converter of light. A relationship between luminescence and voltage is derived, using detailed balance and the chemical potential of the excitation, which is similar to that obtained using the techniques of Shockley and Queisser or R. T. Ross. This model relates the absorptivity and photoluminescence efficiency of the light absorber to the I V curve. In this way both thermodynamic properties, or voltage, and the kinetics, or charge transfer and current, can be combined in order to optimize materials and configurations. The model is applied to dye sensitized Ti02 solar cells, and compared with preliminary experimental data for Ru based charge transfer dyes and inorganic compounds. The luminescence model is found to be applicable to dye sensitized converters, as well as to standard silicon solar cells, light detectors, and LEDs.

  18. Current-voltage characteristics and transition voltage spectroscopy of individual redox proteins.

    Science.gov (United States)

    Artés, Juan M; López-Martínez, Montserrat; Giraudet, Arnaud; Díez-Pérez, Ismael; Sanz, Fausto; Gorostiza, Pau

    2012-12-19

    Understanding how molecular conductance depends on voltage is essential for characterizing molecular electronics devices. We reproducibly measured current-voltage characteristics of individual redox-active proteins by scanning tunneling microscopy under potentiostatic control in both tunneling and wired configurations. From these results, transition voltage spectroscopy (TVS) data for individual redox molecules can be calculated and analyzed statistically, adding a new dimension to conductance measurements. The transition voltage (TV) is discussed in terms of the two-step electron transfer (ET) mechanism. Azurin displays the lowest TV measured to date (0.4 V), consistent with the previously reported distance decay factor. This low TV may be advantageous for fabricating and operating molecular electronic devices for different applications. Our measurements show that TVS is a helpful tool for single-molecule ET measurements and suggest a mechanism for gating of ET between partner redox proteins.

  19. Fault identification in crystalline silicon PV modules by complementary analysis of the light and dark current-voltage characteristics

    DEFF Research Database (Denmark)

    Spataru, Sergiu; Sera, Dezso; Hacke, Peter

    2014-01-01

    Photovoltaic system (PV) maintenance and diagnostic tools are often based on performance models of the system, complemented with light current-voltage (I-V) measurements, visual inspection and/or thermal imaging. Although these are invaluable tools in diagnosing PV system performance losses and f...

  20. Current-voltage characteristics simulation and analysis of 4H-SiC metal-semiconductor-metal ultraviolet photodetectors

    Institute of Scientific and Technical Information of China (English)

    Junqin Zhang; Yintang Yang; Lifei Lou; Yan Zhao

    2008-01-01

    The current-voltage (I-V) characteristics of 4H-SiC metal-semiconductor-metal (MSM) ultraviolet pho-todetector with different finger widths and spacings, different carrier concentrations and thicknesses of n-type epitaxial layer are simulated. The simulation results indicate that the dark current and the pho-tocurrent both increase when the finger width increases. But the effect of finger width on the dark current is more significant. On the other hand, the effect of finger spacing on the photocurrent is more significant. When the finger spacing increases, the photocurrent decreases and the dark current is almost changeless. In addition, it is found that the smaller the carrier concentration of n-type epitaxial layer is, the smaller the dark current and the larger the photocurrent wiU be. It is also found that I-V characteristics of MSM detector also depend on the epitaxial layer thickness. The dark current of detector is smaller and the photocurrent is larger when the epitaxial layer thickness is about 3 μm.

  1. Coupling of intrinsic Josephson junctions and subgap structure in the current-voltage characteristics of high-T{sub c} superconductors

    Energy Technology Data Exchange (ETDEWEB)

    Shukrinov, Yu.M. [Institute for Advanced Studies in Basic Sciences, Zanjan (Iran, Islamic Republic of); Physical Technical Institute of Tajik Academy of Sciences, Dushanbe (Tajikistan); Nasrulaev, Kh. [Physical Technical Institute of Tajik Academy of Sciences, Dushanbe (Tajikistan); Sargolzaei, M. [Institute for Advanced Studies in Basic Sciences, Zanjan (Iran, Islamic Republic of); Oya, G.; Irie, A. [Utsunomiya University, Yoto, Utsunomiya (Japan); CREST, Japan Science and Technology Corporation (JST), Kawaguchi, Saitama (Japan)

    2002-01-01

    The subgap structure in current-voltage (I-V) characteristics of a stack of intrinsic Josephson junctions in high-T{sub c} superconductors is studied. An analytical formula for the I-V characteristics is obtained which had taken into account the influence of the dynamically breaking of charge neutrality (DBCN) in CuO{sub 2} layers on the subgap structure. It is shown that DBCN does not affect the positions and the amplitudes of the subgap peaks, but changes the curvature of the branches in the I-V characteristics. As a possible manifestation of the non-equivalence of the junction, the experimental I-V characteristics of intrinsic Josephson junctions are presented. (author)

  2. Current-voltage characteristics of individual conducting polymer nanotubes and nanowires

    Institute of Scientific and Technical Information of China (English)

    Long Yun-ze; Yin Zhi-Hua; Li Meng-Meng; Gu Chang-Zhi; Duvail Jean-Luc; Jin Ai-zi; Wan Mei-xiang

    2009-01-01

    We report the current-voltage (Ⅰ-Ⅴ) characteristics of individual polypyrrole nanotubes and poly(3,4-ethylenedioxythiophene) (PEDOT) nanowires in a temperature range from 300 K to 2 K. Considering the complex structures of such quasi-one-dimensional systems with an array of ordered conductive regions separated by disordered barriers, we use the extended fluctuation-induced tunneling (FIT) and thermal excitation model (Kaiser expression) to fit the temperature and electric-field dependent Ⅰ-Ⅴ curves. It is found that the Ⅰ-Ⅴ data measured at higher temperatures or higher voltages can be well fitted by the Kaiser expression. However, the low-temperature data around the zero bias clearly deviate from those obtained from this model. The deviation (or zero-bias conductance suppression)could be possibly ascribed to the occurrence of the Coulomb-gap in the density of states near the Femi level and/or the enhancement of electron-electron interaction resulting from nanosize effects, which have been revealed in the previous studies on low-temperature electronic transport in conducting polymer films, pellets and nanostructures. In addition,similar Ⅰ-Ⅴ characteristics and deviation are also observed in an isolated K0.27MnO2 nanowire.

  3. Self-assembly of the 3-aminopropyltrimethoxysilane multilayers on Si and hysteretic current-voltage characteristics

    Science.gov (United States)

    Chauhan, A. K.; Aswal, D. K.; Koiry, S. P.; Gupta, S. K.; Yakhmi, J. V.; Sürgers, C.; Guerin, D.; Lenfant, S.; Vuillaume, D.

    2008-03-01

    We report the deposition of 3-aminopropyltrimethoxysilane (APTMS) multilayers on SiOx/Si(p++) substrates by a layer-by-layer self-assembly process. The multilayers were grafted in a glove box having nitrogen ambient with both humidity and oxygen contents water contact angle, ellipsometry, X-rayphotoelectron spectroscopy and atomic force microscope measurements revealed that self-assembling of the multilayers takes place in two distinct stages: (i) the first APTMS monolayer chemisorbs on a hydroxylated oxide surface by a silanization process and, (ii) the surface amino group of the first monolayer chemisorbs the hydrolyzed silane group of other APTMS molecules present in the solution, leading to the formation of a bilayer. The second stage is a self-replicating process that results in the layer-by-layer self-assembly of the multilayers with trapped NH3 + ions. The current-voltage characteristics of the multilayers exhibit a hysteresis effect along with a negative differential resistance, suggesting their potential application in the molecular memory devices. A possible mechanism for the observed hysteresis effect based on filling and de-filling of the NH3 + acting as traps is presented.

  4. First-Principles Electronic Structure Studies of the Current-Voltage Characteristics of Molecular Nanostructures

    Science.gov (United States)

    Pati, Ranjit; Karna, Shashi P.

    2001-03-01

    Recent advancements in the experimental measurement of conductance across a single molecule(M. A. Reed et al, Science, 278) , 252 (1997). have generated great deal of interest in the feasibility of molecular electronic devices. A successful realization of molecule based electronic devices rests on a detailed understanding of the physical principles underlying controlled transport of electron/hole across molecular units. In order to develop such a fundamental understanding, we have investigated current-voltage characteristics of metal atom (Ag, Au) substituted 1,4-dithiobenzene within Green's function approach according to Datta and coworkers( W. Tian et al, J. Chem. Phys., 109), 2874 (1998).. Ab initio Hamiltonian matrix elements are used to construct the Green's function. The calculated conductance spectrum for the molecule with S bonded to Au atoms qualitatively agrees with the experiment^1. However, large quantitative difference between the calculated and measured conductance is noted. The Au and Ag bonded 1,4-dithiobenzene molecules exhibit marked difference in their resistance and conductance spectra. The conductance of the Ag-bonded molecule is calculated to be about 1.5 times larger than that bonded with Au.

  5. Analytical two-dimensional model of solar cell current-voltage characteristics

    Energy Technology Data Exchange (ETDEWEB)

    Caldararu, F.; Caldararu, M.; Nan, S.; Nicolaescu, D.; Vasile, S. (ICCE, Bucharest (RO). R and D Center for Electron Devices)

    1991-06-01

    This paper describes an analytical two-dimensional model for pn junction solar cell I-V characteristic. In order to solve the two-dimensional equations for the minority carrier concentration the Laplace transformation method is used. The model eliminates Hovel's assumptions concerning a one-dimensional model and provides an I-V characteristic that is simpler than those derived from the one-dimensional model. The method can be extended to any other device with two-dimensional symmetry. (author).

  6. Instabilities in the current-voltage characteristics of submicron BSCCO bridges

    Energy Technology Data Exchange (ETDEWEB)

    Zybtsev, S G [Institute of Radioengineering and Electronics RAS Moscow 125009 (Russian Federation); Pokrovskii, V Ya [Institute of Radioengineering and Electronics RAS Moscow 125009 (Russian Federation); Gorlova, I G [Institute of Radioengineering and Electronics RAS Moscow 125009 (Russian Federation); Latyshev, Yu I [Institute of Radioengineering and Electronics RAS Moscow 125009 (Russian Federation); Timofeev, V N [A.A. Baikov Institute of Metallurgy RAS Moscow (Russian Federation)

    2006-06-01

    The influence of magnetic field and microwave irradiation on dynamical phase separation in submicron Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub 8+x} bridges has been studied. Strong effect on the shape and metastable character of the step-like I-V characteristics are found. Under a weak field H < 2 Oe and low level microwave irradiation the step-like structure of the I-V characteristics smears out and disappears completely. The average frequency of switching between metastable states grows by 5 orders under increase of magnetic field by only 1 Oe. This behavior is explained in terms of the model of dynamical vortex lines.

  7. Effect of coupling on scheme of hysteresis jumps in current-voltage characteristics of intrinsic Josephson junctions in high- superconductors

    OpenAIRE

    Shukrinov, Yu M.; Mahfouzi, F.

    2005-01-01

    We report the numerical calculations of the current-voltage characteristics of intrinsic Josephson junctions in high- superconductors. The charging effect at superconducting layers is taken into account. A set of equations is used to study the non-linear dynamics of the system. In framework of capacitively coupled Josephson junctions model we obtain the total number of branches using fixed initial conditions for phases and their derivatives. The influence of the coupling constant \\alpha on th...

  8. Resistance switching memory operation using the bistability in current-voltage characteristics of GaN/AlN resonant tunneling diodes

    Science.gov (United States)

    Nagase, Masanori; Takahashi, Tokio; Shimizu, Mitsuaki

    2016-10-01

    Resistance switching memory operations using the bistability in the current-voltage (I-V) characteristics of GaN/AlN resonant tunneling diodes (RTDs) were investigated to realize an ultrafast nonvolatile memory operating at a picosecond time scale. Resistance switching memory operations based on electron accumulation due to intersubband transitions and electron release due to tunneling current were demonstrated with high reproducibility at room temperature when the leakage of electrons accumulating in the quantum well from the deep level in the AlN barrier was suppressed. A nonvolatile memory for the processor core in a normally off computing system is expected to be realized using the bistability in the I-V characteristics of GaN/AlN RTDs.

  9. Modeling the current-voltage characteristics of bilayer polymer photovoltaic devices

    Science.gov (United States)

    Barker, J. A.; Ramsdale, C. M.; Greenham, N. C.

    2003-02-01

    We have developed a numerical model to predict the current-voltage curves of bilayer conjugated polymer photovoltaic devices. The model accounts for charge photogeneration, injection, drift, diffusion, and recombination, and includes the effect of space charge on the electric field within the device. Charge separation at the polymer-polymer interface leads to the formation of bound polaron pairs which may either recombine monomolecularly or be dissociated into free charges, and we develop expressions for the field dependence of the dissociation rate. We find that the short-circuit quantum efficiency is determined by the competition between polaron pair dissociation and recombination. The model shows a logarithmic dependence of the open-circuit voltage on the incident intensity, as seen experimentally. This additional intensity-dependent voltage arises from the field required to produce a drift current that balances the current due to diffusion of carriers away from the interface.

  10. Fabrication and current-voltage characteristics of NiOx/ZnO based MIIM tunnel diode

    Science.gov (United States)

    Singh, Aparajita; Ratnadurai, Rudraskandan; Kumar, Rajesh; Krishnan, Subramanian; Emirov, Yusuf; Bhansali, Shekhar

    2015-04-01

    Enhanced asymmetric and non-linear characteristics of Ni-NiOx based MIM diode has been reported by the addition of a second insulator layer ZnO to form MIIM configuration. These properties are required for applications like energy-harvesting devices, terahertz electronics, macro electronics, etc. In this work, single insulator layer Ni-NiOx-Cr and double insulator Ni-NiOx-ZnO-Cr tunnel diodes were fabricated and their I-V characteristics were studied. A significant increase by one order of magnitude in asymmetry has been observed in case of bilayer NiOx/ZnO dielectric configuration at low voltages. The sensitivity of the NiOx and NiOx/ZnO dielectric configuration in MIM stack was 11 V-1 and 16 V-1. The improved performance of the bilayer insulator diode is due to the second insulator which enables resonant tunneling or step-tunneling. Resonant tunneling was found to be dominant through trap assisted tunneling in the NiOx/ZnO diode.

  11. Nonlinear current-voltage characteristics of sintered tungsten-vanadium oxide

    Institute of Scientific and Technical Information of China (English)

    Liu Zu-Li; Yang Lin-Feng; Wang Yu; Yao Kai-Lun; Wang Chuan-Cong

    2004-01-01

    We have studied the densification behaviour, microstructure and electrical properties of WO3 ceramics with V2O5as the additive ranging from 0.5 to 15mo1%. Scanning electron microscopic photos indicated that the grain size of WO3-V2O5 specimens is smaller than that of pure WO3. The addition of V2O5 to WO3 showed a tendency to enhance the densification rate and to restrict the grain growth. Electrical properties of all specimens were measured for different electrodes at different temperatures. The formation of the grain boundary barrier layer was confirmed by the non-ohmic I-V behaviour. The nonlinear coefficient was obtained at the current density J=0.01, 0.1 and 1mA-cm2 for a series of WO3-V2O5 samples. The V0.Smol% specimen showed an abnormal phenomenon that the nonlinear characteristics appeared at 350℃ and disappeared at lower and higher temperatures. This implies that it could be applied as a hightemperature varistor. The double Schottky barrier model was adopted to explain the phenomena for the WO3-V2O5varistors.

  12. Analytical form of current-voltage characteristic of parallel-plane, cylindrical and spherical ionization chambers with homogeneous ionization

    Energy Technology Data Exchange (ETDEWEB)

    Stoyanov, D G [Faculty of Engineering and Pedagogy in Sliven, Technical University of Sofia, 59, Bourgasko Shaussee Blvd, 8800 Sliven (Bulgaria)

    2007-11-15

    The elementary processes taking place in the formation of charged particles and their flow in parallel-plane, cylindrical and spherical geometry cases of ionization chamber are considered. On the basis of particles and charges balance a differential equation describing the distribution of current densities in the ionization chamber volume is obtained. As a result of the differential equation solution an analytical form of the current-voltage characteristic of an ionization chamber with homogeneous ionization is obtained. For the parallel-plane case comparision with experimental data is performed.

  13. Theoretical aspects and methods of parameters identification of the electric traction system devices. method of cyclic current-voltage characteristics

    Directory of Open Access Journals (Sweden)

    T.M.Mishchenko

    2013-02-01

    Full Text Available Purpose. To define the characteristics of numerical calculations of mathematical model with one or more cyclic current voltage characteristics (CVC. This is an urgent problem, since any electric traction system device and electrified track in general, like non-linear passive or active two-terminal network in the present operating mode is described by current-voltage characteristic (CVC, which is based on the given input voltage and input current. Me-thodology. The electromagnetic process calculation in the power circuits of traction electric energy supply is the probabilistic task with solving nonlinear stochastic differential equations requiring for the development of special methods. Given the calculation difficulty, it is reasonable to perform them either by real CVC graph bypass or initially by applying its equivalent replacement with, for example, an ellipse. Findings. Numerical calculations of the mathematical model with one or more cyclic CVC can be performed by “real” CVC bypass or by "idealization" i. e. approximate replacement of real cyclic CVC. Originality. This paper presents the dynamic CVC of the DS3 and 2ES5K electric locomotives at different currents of electric locomotives. Practical value. Cyclic CVC normally and definitely can be applied in the system of electromagnetic state equations while transient state calculating in the traction system. Therefore while calculating the experimentally obtained CVC for the most “difficult and complex” (or/and the “easiest” mode is applied.

  14. Kinetics deformation of current-voltage characteristics of the varistor oxide structures due to overcharging of the localized states

    Directory of Open Access Journals (Sweden)

    Tonkoshkur A. S.

    2014-12-01

    Full Text Available Prolonged exposure of zinc oxide varistors to the electrical load leads to current-voltage characteristics (CVC deformation, which is associated with a change in the height and width of the intergranular barriers, which are main structural element of the varistors. Polarization phenomena in zinc oxide ceramics are studied in a number of works, but those are mainly limited to the study of the physics of the CVC deformation process and to determining the parameters of localized electronic states involved in this process. This paper presents the results on the simulation of the deformation of pulse CVC of a separate intergranular potential barrier at transient polarization/depolarization, associated with recharging of surface electronic states (SES, which cause this barrier. It is found that at high density of SES their degree of electron filling is small and the effect of DC voltage leads to a shift of pulse current-voltage characteristics into the region of small currents. Conversely, the low density SES are almost completely filled with electrons, and after crystallite polarization CVC is shifted to high currents. Experimental studies have confirmed the possibility of applying the discovered laws to ceramic varistor structures. The proposed model allows interpreting the «anomalous» effects (such as increase in the classification voltage and reduction of active losses power observed during the varistors accelerated aging test.

  15. Studies on temperature dependence of current-voltage characteristics of glancing angle deposited indium oxide nanowire on silicon substrate

    Energy Technology Data Exchange (ETDEWEB)

    Mondal, Aniruddha, E-mail: aniruddhamo@gmail.com; Das, Amit Kumar [Department of Physics, National Institute of technology Durgapur, Mahatma Gandhi Rd, A-Zone, Durgapur, West Bengal, India-713209 (India); Dey, Anubhab [Indian Institute of Science Education and Research, Thiruvananthapuram, Computer Science Building, College of Engineering Trivandrum Campus, Thiruvananthapuram, Kerala 695016 (India); Choudhuri, Bijit [Department of Electronics & Communication Engineering, National Institute of Technology Agartala, Jirania, Tripura, India - 799046 (India)

    2016-05-06

    The 1D perpendicular In{sub 2-x}O{sub 3-y} nanostructure arrays have been synthesized by using glancing angle deposition (GLAD) technique. A low deposition rate of 0.5 A°/S produced highly porous structure. The current - voltage characteristics for the In{sub 2-x}O{sub 3-y}nanocolumnar array based were measured through a gold Schottky contact at different temperatures. The temperature dependent ideality factor was calculated from the observed current – voltage characteristics. The ideality factor was found to vary from 4.19 to 2.75 with a variation in temperature from 313 K to 473 K.

  16. Double injection, resonant-tunneling recombination, and current-voltage characteristics in double-graphene-layer structures

    Energy Technology Data Exchange (ETDEWEB)

    Ryzhii, M. [Department of Computer Science and Engineering, University of Aizu, Aizu-Wakamatsu 965-8580 (Japan); Ryzhii, V. [Research Institute for Electrical Communication, Tohoku University, Sendai 980-8577 (Japan); Institute of Ultra High Frequency Semiconductor Electronics, Russian Academy of Sciences, Moscow 111005 (Russian Federation); Otsuji, T. [Research Institute for Electrical Communication, Tohoku University, Sendai 980-8577 (Japan); Maltsev, P. P. [Institute of Ultra High Frequency Semiconductor Electronics, Russian Academy of Sciences, Moscow 111005 (Russian Federation); Leiman, V. G. [Moscow Institute of Physics and Technology, Dolgoprudny, Moscow Region 141700 (Russian Federation); Ryabova, N. [Department of Computer Science and Engineering, University of Aizu, Aizu-Wakamatsu 965-8580 (Japan); Center for Photonics and Infrared Engineering, Bauman Moscow State Technical University, Moscow 105005 (Russian Federation); Mitin, V. [Department of Electrical Engineering, University at Buffalo, Buffalo, New York 1460-1920 (United States)

    2014-01-14

    We evaluate the effect of the recombination associated with interlayer transitions in ungated and gated double-graphene-layer (GL) structures on the injection of electrons and holes. Using the proposed model, we derive analytical expressions for the spatial distributions of the electron and hole Fermi energies and the energy gap between the Dirac points in GLs as well as their dependences on the bias and gate voltages. The current-voltage characteristics are calculated as well. The model is based on hydrodynamic equations for the electron and hole transports in GLs under the self-consistent electric field. It is shown that in undoped double-GL structures with weak scattering of electrons and holes on disorder, the Fermi energies and the energy gap are virtually constant across the main portions of GLs, although their values strongly depend on the voltages and recombination parameters. In contrast, the electron and hole scattering on disorder lead to substantial nonuniformities. The resonant inter-GL tunneling enables N-shaped current-voltage characteristics provided that GLs are sufficiently short. The width of the current maxima is much larger than the broadening of the tunneling resonance. In the double-GL structures with relatively long GLs, the N-shaped characteristics transform into the Z-shaped characteristics. The obtained results are in line with the experimental observations [Britnell et al., Nat. Commun. 4, 1794–1799 (2013)] and might be useful for design and optimization of different devices based on double-GL structures, including field-effect transistors and terahertz lasers.

  17. Phase-field modeling of switchable diode-like current-voltage characteristics in ferroelectric BaTiO{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Cao, Y., E-mail: yxc238@psu.edu; Randall, C. A.; Chen, L. Q. [Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Shen, J. [Department of Mathematics, Purdue University, West Lafayette, Indiana 47907 (United States)

    2014-05-05

    A self-consistent model has been proposed to study the switchable current-voltage (I-V) characteristics in Cu/BaTiO{sub 3}/Cu sandwiched structure combining the phase-field model of ferroelectric domains and diffusion equations for ionic/electronic transport. The electrochemical transport equations and Ginzburg-Landau equations are solved using the Chebyshev collocation algorithm. We considered a single parallel plate capacitor configuration which consists of a single layer BaTiO{sub 3} containing a single tetragonal domain orientated normal to the plate electrodes (Cu) and is subject to a sweep of ac bias from −1.0 to 1.0 V at 25 °C. Our simulation clearly shows rectifying I-V response with rectification ratios amount to 10{sup 2}. The diode characteristics are switchable with an even larger rectification ratio after the polarization direction is flipped. The effects of interfacial polarization charge, dopant concentration, and dielectric constant on current responses were investigated. The switchable I-V behavior is attributed to the polarization bound charges that modulate the bulk conduction.

  18. Analysis of current-voltage characteristics of Au/pentacene/fluorine polymer/indium zinc oxide diodes by electric-field-induced optical second-harmonic generation

    Energy Technology Data Exchange (ETDEWEB)

    Nishi, Shohei; Taguchi, Dai; Manaka, Takaaki; Iwamoto, Mitsumasa, E-mail: iwamoto@pe.titech.ac.jp [Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 S3-33, O-okayama, Meguro-ku, Tokyo 152-8552 (Japan)

    2015-06-28

    By using electric-field-induced optical second-harmonic generation measurement coupled with the conventional current-voltage (I-V) measurement, we studied the carrier transport of organic double-layer diodes with a Au/pentacene/fluorine polymer (FP)/indium zinc oxide (IZO) structure. The rectifying I-V characteristics were converted into the I-E characteristics of the FP and pentacene layers. Results suggest a model in which Schottky-type electron injection from the IZO electrode to the FP layer governs the forward electrical conduction (V > 0), where the space charge electric field produced in the FP layer by accumulated holes at the pentacene/FP interface makes a significant contribution. On the other hand, Schottky-type injection by accumulated interface electrons from the pentacene layer to the FP layer governs the backward electrical conduction (V < 0). The electroluminescence generated from the pentacene layer in the region V > 0 verifies the electron transport across the FP layer, and supports the above suggested model.

  19. Surge current capabilities and isothermal current-voltage characteristics of high-voltage 4H-SiC junction barrier Schottky rectifiers

    Science.gov (United States)

    Palmour, J. W.; Levinshtein, M. E.; Ivanov, P. A.; Zhang, Q. J.

    2015-06-01

    Isothermal forward current-voltage characteristics of high-voltage 4H-SiC junction barrier Schottky rectifiers (JBS) have been studied for the first time. Isothermal characteristics were measured with JBS having a blocking voltage of 1700 V up to a current density j  ≈  4200 A cm-2 in the temperature range 297-460 K. Quasi-isothermal current-voltage characteristics of these devices were studied with injection of minority carriers (holes) up to j  ≈  7200 A cm-2 and ambient temperatures of 297 and 460 K. The isothermal forward current-voltage characteristics make it possible to numerically calculate (for example, by an iteration procedure) the overheating in an arbitrary operation mode.

  20. Effect of Light Intensity and Temperature on the Current Voltage Characteristics of Al/ SY/ p- Si Organic-Inorganic Heterojunction

    Science.gov (United States)

    Imer, Arife Gencer; Ocak, Yusuf Selim

    2016-10-01

    An organic-inorganic contact was fabricated by forming a thin film of sunset yellow dye ( SY) on a p- Si wafer. The device showed a good rectification property, and the sunset yellow thin film modified the barrier height (Φb) of Al/ p- Si contact by influencing the space charge region. The heterojunction had a strong response to the different illumination intensities and showed that it can be suitable for photodiode applications. The I- V measurements of the device were also applied in the temperature range of 100-500 K. It was seen that characteristic parameters of the device were strongly dependent upon temperature. While the value of Φb increased, the ideality factor ( n) decreased with the increase in temperature. This variation was attributed to spatial inhomogeneity at the interface. The Norde function was used to determine the temperature-dependent series resistance and Φb values, and there was a good agreement with that of ln I- V data. The values of the Richardson constant ( A*) and mean Φb were determined as 29.47 Acm-2 K-2 by means of a modified activation energy plot, matching with a theoretical one, and 1.032 eV, respectively. Therefore, it was stated that the current voltage characteristic with the temperature can be explained by thermionic emission theory with Gaussian distribution of the Φb at the interface.

  1. Effect of inductive and capacitive coupling on the current-voltage characteristic and electromagnetic radiation from a system of Josephson junctions

    Science.gov (United States)

    Rahmonov, I. R.; Shukrinov, Yu. M.; Atanasova, P. Kh.; Zemlyanaya, E. V.; Bashashin, M. V.

    2017-01-01

    We have studied the current-voltage characteristic of a system of long Josephson junctions taking into account the inductive and capacitive coupling. The dependence of the average time derivative of the phase difference on the bias current and spatiotemporal dependences of the phase difference and magnetic field in each junction are considered. The possibility of branching of the current-voltage characteristic in the region of zero field step, which is associated with different numbers of fluxons in individual Josephson junctions, is demonstrated. The current-voltage characteristic of the system of Josephson junctions is compared with the case of a single junction, and it is shown that the observed branching is due to coupling between the junctions. The intensity of electromagnetic radiation associated with motion of fluxons is calculated, and the effect of coupling between junctions on the radiation power is analyzed.

  2. Current-voltage characteristics of single-molecule diarylethene junctions measured with adjustable gold electrodes in solution.

    Science.gov (United States)

    Briechle, Bernd M; Kim, Youngsang; Ehrenreich, Philipp; Erbe, Artur; Sysoiev, Dmytro; Huhn, Thomas; Groth, Ulrich; Scheer, Elke

    2012-01-01

    We report on an experimental analysis of the charge transport through sulfur-free photochromic molecular junctions. The conductance of individual molecules contacted with gold electrodes and the current-voltage characteristics of these junctions are measured in a mechanically controlled break-junction system at room temperature and in liquid environment. We compare the transport properties of a series of molecules, labeled TSC, MN, and 4Py, with the same switching core but varying side-arms and end-groups designed for providing the mechanical and electrical contact to the gold electrodes. We perform a detailed analysis of the transport properties of TSC in its open and closed states. We find rather broad distributions of conductance values in both states. The analysis, based on the assumption that the current is carried by a single dominating molecular orbital, reveals distinct differences between both states. We discuss the appearance of diode-like behavior for the particular species 4Py that features end-groups, which preferentially couple to the metal electrode by physisorption. We show that the energetic position of the molecular orbital varies as a function of the transmission. Finally, we show for the species MN that the use of two cyano end-groups on each side considerably enhances the coupling strength compared to the typical behavior of a single cyano group.

  3. Device characterization and optimization of small molecule organic solar cells assisted by modelling simulation of the current-voltage characteristics.

    Science.gov (United States)

    Zuo, Yi; Wan, Xiangjian; Long, Guankui; Kan, Bin; Ni, Wang; Zhang, Hongtao; Chen, Yongsheng

    2015-07-15

    In order to understand the photovoltaic performance differences between the recently reported DR3TBTT-HD and DR3TBDT2T based solar cells, a modified two-diode model with Hecht equation was built to simulate the corresponding current-voltage characteristics. The simulation results reveal that the poor device performance of the DR3TBDTT-HD based device mainly originated from its insufficient charge transport ability, where an average current of 5.79 mA cm(-2) was lost through this pathway at the maximum power point for the DR3TBDTT-HD device, nearly three times as large as that of the DR3TBDT2T based device under the same device fabrication conditions. The morphology studies support these simulation results, in which both Raman and 2D-GIXD data reveal that DR3TBTT-HD based blend films exhibit lower crystallinity. Spin coating at low temperature was used to increase the crystallinity of DR3TBDTT-HD based blend films, and the average current loss through insufficient charge transport at maximum power point was suppressed to 2.08 mA cm(-2). As a result, the average experimental power conversion efficiency of DR3TBDTT-HD based solar cells increased by over 40%.

  4. Analytical form of current-voltage characteristic of parallel-plane, cylindrical and spherical ionization chambers with homogeneous ionization

    CERN Document Server

    Stoyanov, Dimitar G

    2007-01-01

    The elementary processes taking place in the formation of charged particles and their flow in the ionization chamber are considered. On the basic of particles and charges balance a differential equation describing the distribution of current densities in the ionization chamber volume is obtained. As a result of the differential equation solution an analytical form of the current-voltage.

  5. Current-voltage characteristics and charge DLTS spectra of proton-bombarded Schottky diodes on semi-insulating GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Thurzo, I. (Inst. of Physics, Slovak Academy of Sciences, Bratislava (Slovakia)); Hrubcin, L. (Inst. of Electrical Engineering, Slovak Academy of Sciences, Bratislava (Slovakia)); Bartos, J. (Inst. of Physics, Slovak Academy of Sciences, Bratislava (Slovakia)); Pincik, E. (Inst. of Physics, Slovak Academy of Sciences, Bratislava (Slovakia))

    1993-10-01

    Changes in the current-voltage characteristics and charge DLTS spectra of Schottky diodes on semi-insulating GaAs after irradiation by protons at different energies and doses are presented and discussed. Apart from a progressive degradation of the Schottky barriers with enhanced proton energy and dose, there is a threshold, positioned between 10[sup 14] and 10[sup 15] protons/cm[sup 2], for observing trap-limited transients. (orig.)

  6. Impact of charge transport on current-voltage characteristics and power-conversion efficiency of organic solar cells.

    Science.gov (United States)

    Würfel, Uli; Neher, Dieter; Spies, Annika; Albrecht, Steve

    2015-04-24

    This work elucidates the impact of charge transport on the photovoltaic properties of organic solar cells. Here we show that the analysis of current-voltage curves of organic solar cells under illumination with the Shockley equation results in values for ideality factor, photocurrent and parallel resistance, which lack physical meaning. Drift-diffusion simulations for a wide range of charge-carrier mobilities and illumination intensities reveal significant carrier accumulation caused by poor transport properties, which is not included in the Shockley equation. As a consequence, the separation of the quasi Fermi levels in the organic photoactive layer (internal voltage) differs substantially from the external voltage for almost all conditions. We present a new analytical model, which considers carrier transport explicitly. The model shows excellent agreement with full drift-diffusion simulations over a wide range of mobilities and illumination intensities, making it suitable for realistic efficiency predictions for organic solar cells.

  7. S-shaped current-voltage characteristics of polymer composite films containing graphene and graphene oxide particles

    Science.gov (United States)

    Krylov, P. S.; Berestennikov, A. S.; Fefelov, S. A.; Komolov, A. S.; Aleshin, A. N.

    2016-12-01

    The resistive switching effects in composite films containing polyfunctional polymers, such as derivatives of carbazole (PVK), fluorene (PFD), and polyvinyl chloride (PVC), and also graphene particles (Gr) and graphene oxide (GO), the concentration of which in the polymer matrices varied in the range from 1 to 3 wt % corresponding to the percolation threshold in such systems, have been studied. The analysis of the elemental composition of the investigated composites by means of X-ray photoelectron spectroscopy have shown that the oxidation degree of Gr in GO is about 9 to 10%. It has been established that a sharp conductivity jump characterized by S-shaped current-voltage curves and the presence of their hysteresis occurs upon applying a voltage pulse to the Au/PVK (PFD; PVC): Gr (GO)/ITO/PET structures, where ITO is indium tin oxide, and PET is poly(ethylene terephthalate), with the switching time, t, in the range from 1 to 30 μs. The observed effects are attributed to the influence of redox reactions taking place on the Gr and GO particles enclosed in the polymer matrix, and the additional influence of thermomechanical properties of the polymer constituent of the matrix.

  8. Self-field effects on critical current density and current-voltage characteristics in superconducting YBaCuO thick films

    Energy Technology Data Exchange (ETDEWEB)

    Hernandez, A.D.; Hart, C.; Martinez, C.M.; Ares, O. [Superconductivity Lab, IMRE-University of Havana, Vedado 10400, Havana (Cuba)

    1999-07-01

    The self-field and percolative influences on transport measurements of polycrystalline bridges engraved on YBaCuO thick film have been investigated. A maximum in the dependence of the critical current density on cross-sectional area of the bridge (A = 0.003 mm{sup 2}-0.3 mm{sup 2}) has been found experimentally, in samples with low critical current densities (J{sub c}<50 A cm{sup -2}). The result of the measurements are in agreement with Mulet and coworkers, who have predicted that, under certain conditions, the self-field effects on transport measurements are negligible and the J{sub c} dependence on the sample dimensions is determined by the percolative character of the transport current. Self-field influences have also been observed in current-voltage characteristics, which have been analysed using the Ambegaokar-Halperin phase-slip theory. By allowing the noise parameter ({gamma}) to change with temperature, magnetic field and transport current, adequate agreement between theoretical and experimental current-voltage characteristics has been obtained. The dependence of the noise parameter with the transport current is demonstrated to be related with the self-field. (author)

  9. Adsorption behavior and current-voltage characteristics of CdSe nanocrystals on hydrogen-passivated silicon

    OpenAIRE

    2002-01-01

    Using scanning tunneling microscopy and spectroscopy we have studied both the geometric distribution and the conduction properties of organic shell capped CdSe nanocrystals adsorbed on hydrogen-passivated Si(100). At submonolayer concentrations, the nanocrystal distribution on the surface was found to be highly nonhomogeneous, with an aggregation of most of the nanocrystals into islands of monolayer thickness. I-V spectra collected on nanocrystals adsorbed on n- and p-type substrates showed a...

  10. Measurements and analysis of current-voltage characteristic of a pn diode for an undergraduate physics laboratory

    CERN Document Server

    Cataldo, Enrico; Maccarrone, Francesco; Paffuti, Giampiero

    2016-01-01

    We show that in a simple experiment at undergraduate level, suitable to be performed in classes of science and engineering students, it is possible to test accurately, on a popular 1N4148 p-n diode, the range of the junction currents where the Shockley equation model can be considered satisfactory. The experiment benefits from a system of temperature control and data collection driven in a LabVIEW environment. With these tools a large quantity of data can be recorded in the temporal frame of a lab session. Significant deviations of the experimental I-V with respect to the ideal behaviour curve predicted by the Shockley equation are observed, both at low and high current. A better agreement over the entire range is obtained introducing, as is customary, a four parameters model, including a parallel and a series resistance. A new iterative fitting procedure is presented which treats the I-V data of different regimes on the same level, and allows a simultaneous determination of the four parameters for each tempe...

  11. Magnetic field cycling effect on the non-linear current-voltage characteristics and magnetic field induced negative differential resistance in α-Fe1.64Ga0.36O3 oxide

    Directory of Open Access Journals (Sweden)

    R. N. Bhowmik

    2015-06-01

    Full Text Available We have studied current-voltage (I-V characteristics of α-Fe1.64Ga0.36O3, a typical canted ferromagnetic semiconductor. The sample showed a transformation of the I-V curves from linear to non-linear character with the increase of bias voltage. The I-V curves showed irreversible features with hysteresis loop and bi-stable electronic states for up and down modes of voltage sweep. We report positive magnetoresistance and magnetic field induced negative differential resistance as the first time observed phenomena in metal doped hematite system. The magnitudes of critical voltage at which I-V curve showed peak and corresponding peak current are affected by magnetic field cycling. The shift of the peak voltage with magnetic field showed a step-wise jump between two discrete voltage levels with least gap (ΔVP 0.345(± 0.001 V. The magnetic spin dependent electronic charge transport in this new class of magnetic semiconductor opens a wide scope for tuning large electroresistance (∼500-700%, magnetoresistance (70-135 % and charge-spin dependent conductivity under suitable control of electric and magnetic fields. The electric and magnetic field controlled charge-spin transport is interesting for applications of the magnetic materials in spintronics, e.g., magnetic sensor, memory devices and digital switching.

  12. Nonlinear current-voltage characteristics due to quantum tunneling of phase slips in superconducting Nb nanowire networks

    Energy Technology Data Exchange (ETDEWEB)

    Trezza, M.; Cirillo, C.; Sabatino, P.; Carapella, G.; Attanasio, C. [CNR-SPIN Salerno and Dipartimento di Fisica “E. R. Caianiello”, Università degli Studi di Salerno, Fisciano I-84084 (Italy); Prischepa, S. L. [Belarusian State University of Informatics and Radioelectronics, P. Browka 6, Minsk 220013 (Belarus)

    2013-12-16

    We report on the transport properties of an array of N∼30 interconnected Nb nanowires, grown by sputtering on robust porous Si substrates. The analyzed system exhibits a broad resistive transition in zero magnetic field, H, and highly nonlinear V(I) characteristics as a function of H, which can be both consistently described by quantum tunneling of phase slips.

  13. Asymmetry of Polarization Reversal and Current-Voltage Characteristics of Pt/PZT-Film/Pt:Ti/SiO2/Si-Substrate Structures

    Directory of Open Access Journals (Sweden)

    S. L. Bravina

    2011-01-01

    Full Text Available The characterization of the asymmetries of bipolar charge-voltage and current-voltage loops of polarization reversal and unipolar current-voltage curves for Pt/PZT-film/Pt:Ti/SiO2/Si-substrate systems was performed in the dynamic mode. The asymmetry of local deformation-voltage loops was observed by piezoresponse force microscopy. The comparison of the dependences of introduced asymmetry factors for the bipolar charge-voltage and current-voltage loops and unipolar current-voltage curves on drive voltage indicates the interconnection of ferroelectric and electrical space charge transfer asymmetries.

  14. Electrodynamic stabilization conditions for high-temperature superconducting composites with different types of current-voltage characteristic nonlinearity

    Science.gov (United States)

    Arkharov, A. M.; Lavrov, N. A.; Romanovskii, V. R.

    2014-06-01

    The current instability is studied in high-temperature superconducting current-carrying elements with I- V characteristics described by power or exponential equations. Stability analysis of the macroscopic states is carried out in terms of a stationary zero-dimensional model. In linear temperature approximation criteria are derived that allow one to find the maximum allowable values of the induced current, induced electric field intensity, and overheating of the superconductor. A condition is formulated for the complete thermal stabilization of the superconducting composite with regard to the nonlinearity of its I- V characteristic. It is shown that both subcritical and supercritical stable states may arise. In the latter case, the current and electric field intensity are higher than the preset critical parameters of the superconductor. Conditions for these states depending on the properties of the matrix, superconductor's critical current, fill factor, and nonlinearity of the I- V characteristic are discussed. The obtained results considerably augment the class of allowable states for high-temperature superconductors: it is demonstrated that there exist stable resistive conditions from which superconductors cannot pass to the normal state even if the parameters of these conditions are supercritical.

  15. A simple method of extracting the polarization charge density in the AlGaN/GaN heterostructure from current-voltage and capacitance-voltage characteristics

    Institute of Scientific and Technical Information of China (English)

    Lü Yuan-Jie; Lin Zhao-Jun; Yu Ying-Xia; Meng Ling-Guo; Cao Zhi-Fang; Luan Chong-Biao; Wang Zhan-Guo

    2012-01-01

    An Ni Schottky contact on the AlGaN/GaN heterostructure is fabricated.The flat-band voltage for the Schottky contact on the AlGaN/GaN heterostructure is obtained from the forward current-voltage characteristics.With the measured capacitance-voltage curve and the flat-band voltage,the polarization charge density in the AlGaN/GaN heterostructure is investigated,and a simple formula for calculating the polarization charge density is obtained and analyzed.With the approach described in this paper,the obtained polarization charge density agrees well with the one calculated by self-consistently solving Schrodinger's and Poisson's equations.

  16. Influence of semiconductor barrier tunneling on the current-voltage characteristics of tunnel metal-oxide-semiconductor diodes

    DEFF Research Database (Denmark)

    Nielsen, Otto M.

    1983-01-01

    Current–voltage characteristics have been examined for Al–SiO2–pSi diodes with an interfacial oxide thickness of delta[approximately-equal-to]20 Å. The diodes were fabricated on and oriented substrates with an impurity concentration in the range of NA=1014–1016 cm−3. The results show that for low...... forward voltages, the diode current is increased with increased NA, but for higher forward voltages, the diode current is decreased as NA is increased. For the diodes examined in this work, the results presented lead to the conclusion that the diode current should be treated as a superposition...... of multistep tunneling recombination current and injected minority carrier diffusion current. This can explain the observed values of the diode quality factor n. The results also show that the voltage drop across the oxide Vox is increased with increased NA, with the result that the lowering of the minority...

  17. Power series fitting of current-voltage characteristics of Al doped ZnO thin film-Sb doped (Ba{sub 0.8}Sr{sub 0.2})TiO{sub 3} heterojunction diode

    Energy Technology Data Exchange (ETDEWEB)

    Sirikulrat, N., E-mail: scphi003@chiangmai.ac.th

    2012-02-29

    The current-voltage (I-V) relationship of aluminum doped zinc oxide thin film-antimony doped barium strontium titanate single heterojunction diodes was investigated. The linear I-V characteristics are similar to those of the PN junction diodes. The linear conduction at a low forward bias voltage as predicted by the space charge limited current theory and the trap free square law at a higher forward voltage are observed. The overall current density-voltage (J-V) characteristics of the diodes are found to be well described by the Power Series Equation J= N-Ary-Summation {sub m}C{sub m}V{sup m} where C{sub m} is the leakage constant at particular power m with the best fit for the power m found to be at the fourth and fifth orders for the forward and reverse bias respectively. - Highlights: Black-Right-Pointing-Pointer The n-n isotype heterojunction diodes of ceramic oxide semiconductors were prepared. Black-Right-Pointing-Pointer The current density-voltage (J-V) curves were analyzed using the Power Series (PS). Black-Right-Pointing-Pointer The J-V characteristics were found to be well described with PS at low order. Black-Right-Pointing-Pointer The thermionic emission and diode leakage currents were comparatively discussed.

  18. The effects of fabrication temperature on current-voltage characteristics and energy efficiencies of quantum dot sensitized ZnOH-GO hybrid solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Islam, S. M. Z. [IUSL, Department of Physics, The City College of New York, 160 Convent Ave., New York, New York 10031 (United States); Department of Physics and Engineering Physics, Fordham University, 441 E. Fordham Road, Bronx, New York 10458 (United States); Department of Electrical Engineering, The City College of New York, 160 Convent Ave., New York, New York 10031 (United States); Gayen, Taposh [IUSL, Department of Physics, The City College of New York, 160 Convent Ave., New York, New York 10031 (United States); Department of Physics and Engineering Physics, Fordham University, 441 E. Fordham Road, Bronx, New York 10458 (United States); Tint, Naing; Alfano, Robert, E-mail: ralfano@sci.ccny.cuny.edu [IUSL, Department of Physics, The City College of New York, 160 Convent Ave., New York, New York 10031 (United States); Department of Electrical Engineering, The City College of New York, 160 Convent Ave., New York, New York 10031 (United States); Shi, Lingyan [IUSL, Department of Physics, The City College of New York, 160 Convent Ave., New York, New York 10031 (United States); Department of Biomedical Engineering, The City College of New York, 160 Convent Ave., New York, New York 10031 (United States); Seredych, Mykola; Bandosz, Teresa J. [Department of Chemistry, The City College of New York, 160 Convent Ave., New York, New York 10031 (United States)

    2014-11-07

    The effects of fabrication temperature are investigated on the performance of CdSe quantum dot (QD)-sensitized hybrid solar cells of the composite material of zinc (hydr)oxide (ZnOH-GO)with 2 wt. % graphite oxide. The current-voltage (I-V) and photo-current measurements show that higher fabrication temperatures yield greater photovoltaic power conversion efficiencies that essentially indicate more efficient solar cells. Two Photon Fluorescence images show the effects of temperature on the internal morphologies of the solar devices based on such materials. The CdSe-QD sensitized ZnOH-GO hybrid solar cells fabricated at 450 °C showing conversion of ∼10.60% under a tungsten lamp (12.1 mW/cm{sup 2}) are reported here, while using potassium iodide as an electrolyte. The output photocurrent, I (μA) with input power, P (mW/cm{sup 2}) is found to be superlinear, showing a relation of I = P{sup n}, where n = 1.4.

  19. The effects of fabrication temperature on current-voltage characteristics and energy efficiencies of quantum dot sensitized ZnOH-GO hybrid solar cells

    Science.gov (United States)

    Islam, S. M. Z.; Gayen, Taposh; Tint, Naing; Shi, Lingyan; Seredych, Mykola; Bandosz, Teresa J.; Alfano, Robert

    2014-11-01

    The effects of fabrication temperature are investigated on the performance of CdSe quantum dot (QD)-sensitized hybrid solar cells of the composite material of zinc (hydr)oxide (ZnOH-GO)with 2 wt. % graphite oxide. The current-voltage (I-V) and photo-current measurements show that higher fabrication temperatures yield greater photovoltaic power conversion efficiencies that essentially indicate more efficient solar cells. Two Photon Fluorescence images show the effects of temperature on the internal morphologies of the solar devices based on such materials. The CdSe-QD sensitized ZnOH-GO hybrid solar cells fabricated at 450 °C showing conversion of ˜10.60% under a tungsten lamp (12.1 mW/cm2) are reported here, while using potassium iodide as an electrolyte. The output photocurrent, I (μA) with input power, P (mW/cm2) is found to be superlinear, showing a relation of I = Pn, where n = 1.4.

  20. High-temperature performance of MoS{sub 2} thin-film transistors: Direct current and pulse current-voltage characteristics

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, C.; Samnakay, R.; Balandin, A. A., E-mail: balandin@ee.ucr.edu [Nano-Device Laboratory (NDL), Department of Electrical Engineering, Bourns College of Engineering, University of California—Riverside, Riverside, California 92521 (United States); Phonon Optimized Engineered Materials (POEM) Center, Materials Science and Engineering Program, University of California—Riverside, Riverside, California 92521 (United States); Rumyantsev, S. L. [Department of Electrical, Computer, and Systems Engineering, Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Ioffe Physical-Technical Institute, St. Petersburg 194021 (Russian Federation); Shur, M. S. [Department of Electrical, Computer, and Systems Engineering, Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States)

    2015-02-14

    We report on fabrication of MoS{sub 2} thin-film transistors (TFTs) and experimental investigations of their high-temperature current-voltage characteristics. The measurements show that MoS{sub 2} devices remain functional to temperatures of at least as high as 500 K. The temperature increase results in decreased threshold voltage and mobility. The comparison of the direct current (DC) and pulse measurements shows that the direct current sub-linear and super-linear output characteristics of MoS{sub 2} thin-films devices result from the Joule heating and the interplay of the threshold voltage and mobility temperature dependences. At temperatures above 450 K, a kink in the drain current occurs at zero gate voltage irrespective of the threshold voltage value. This intriguing phenomenon, referred to as a “memory step,” was attributed to the slow relaxation processes in thin films similar to those in graphene and electron glasses. The fabricated MoS{sub 2} thin-film transistors demonstrated stable operation after two months of aging. The obtained results suggest new applications for MoS{sub 2} thin-film transistors in extreme-temperature electronics and sensors.

  1. Current-voltage characteristics of Bi{sub 2}Sr{sub 2}Ca{sub 2}Cu{sub 3}O{sub 10+x}/Ag multifilamentary tapes in zero applied magnetic field

    Energy Technology Data Exchange (ETDEWEB)

    Crisan, A. [Institute of Cryogenics, University of Southampton, Southampton (United Kingdom); Institute of Physics and Technology of Materials, Bucharest (Romania); Miu, L.; Popa, S. [Institute of Physics and Technology of Materials, Bucharest (Romania); Yang, Y.; Beduz, C. [Institute of Cryogenics, University of Southampton, Southampton (United Kingdom)

    1997-05-01

    Current-voltage characteristics of multifilamentary Bi{sub 2}Sr{sub 2}Ca{sub 2}Cu{sub 3}O{sub 10+x}/Ag tapes (short samples) produced by the 'powder in tube' technique were measured at different temperatures close to the mean-field critical temperature, and inzero applied magnetic field. After performing the required corrections due to the current flowing in the silver matrix, the I-V curves were interpreted in terms of current-induced unbinding of the thermally created vortex-antivortex pairs. Two possible mechanisms for appearance of a finite critical current in zero applied magnetic field are discussed: the Jensen-Minnhagen quasi-two-dimensional (2D) approach, that takes into account the interlayer Josephson coupling, and a model of size limitation of vortex fluctuations. From our analysis, it seems that the latter model is more suitable for this kind of superconducting material, due probably to an accentuated intrinsic anisotropy. (author)

  2. Current-voltage characteristics of quantum-point contacts in the closed-channel regime: Transforming the bias voltage into an energy scale

    DEFF Research Database (Denmark)

    Gloos, K.; Utko, P.; Aagesen, M.;

    2006-01-01

    We investigate the I(V) characteristics (current versus bias voltage) of side-gated quantum-point contacts, defined in GaAs/AlxGa1-xAs heterostructures. These point contacts are operated in the closed-channel regime, that is, at fixed gate voltages below zero-bias pinch-off for conductance. Our...... analysis is based on a single scaling factor, extracted from the experimental I(V) characteristics. For both polarities, this scaling factor transforms the change of bias voltage into a change of electron energy. The latter is determined with respect to the top of the potential barrier of the contact....... Such a built-in energy-voltage calibration allows us to distinguish between the different contributions to the electron transport across the pinched-off contact due to thermal activation or quantum tunneling. The first involves the height of the barrier, and the latter also its length. In the model that we...

  3. Field emission current-voltage curves as a diagnostic for scanning tunneling microscope tips

    Science.gov (United States)

    Meyer, J. A.; Stranick, S. J.; Wang, J. B.; Weiss, P. S.

    1991-12-01

    The current-voltage (I-V) characteristics of a low temperature ultrahigh vacuum scanning tunneling microscope (STM) tip positioned greater than 100 A from a planar surface have been recorded. We find curvature in the Fowler-Nordheim plots (log 10 I/V(sup 2) vs. I/V) due to the tip-plane geometry as has been predicted theoretically. Additionally, oscillations and sharp breaks in these I-V curves are observed over a wide voltage range, 50-1000 V. These I-V curves are used to characterize the STM tips prior to tunneling.

  4. Current-voltage characteristics with several threshold currents in insulating low-doped La1-xSrxMnO3 (x=0.10) thin films

    Institute of Scientific and Technical Information of China (English)

    ZHAO Kun; FENG Jiafeng; HE Meng; L(U) Huibin; JIN Kuijuan; ZHOU Yueliang; YANG Guozhen3

    2008-01-01

    The current-induced resistive switching behavior in the micron-scale pillars of low-doped La0.9Sr0.1MnO3 thin films using laser molecular-beam epitaxy was reported. It was demonstrated that the current-voltage curves at 120 K showed hysteresis with several threshold currents corresponding to the switching in resistance to metastable low resistance states, and finally, four closed loops were formed. A mode was proposed, which was based on the low-temperature canted antiferromagnetism ordering for a lightly doped insulating regime.

  5. Irreversibility in room temperature current-voltage characteristics of NiFe2O4 nanoparticles: A signature of electrical memory effect

    Science.gov (United States)

    Dey, P.; Debnath, Rajesh; Singh, Swati; Mandal, S. K.; Roy, J. N.

    2017-01-01

    Room temperature I-V characteristics study, both in presence and absence of magnetic field (1800 Oe), has been performed on NiFe2O4 nanoparticles, having different particle size (V~14, 21 and 31 nm). Our experiments on these nanoparticles provide evidences for: (1) electrical irreversibility or hysteretic behaviour; (2) positive magnetoresistance and (3) magnetic field dependent electrical irreversibility or hysteresis in the sample. "Hysteretic" nature of I-V curve reveals the existence of electrical memory effect in the sample. Significantly, such hysteresis has been found to be tuned by magnetic field. In order to explain the observed electrical irreversibility, we have proposed a phenomenological model on the light of induced polarization in the sample. Both the positive magnetoresistance and the observed magnetic field dependence of electrical irreversibility have been explained through magnetostriction phenomenon. Interestingly, such effects are found to get reduced with increasing particle size. For NiFe2O4 nanoparticles having V=31 nm, we did not observe any irreversibility effect. This feature has been attributed to the enhanced grain surface effect that in turn gives rise to the residual polarization and hence electrical memory effect in NiFe2O4 nanoparticles, having small nanoscopic particle size.

  6. Parameter extraction from I-V characteristics of PV devices

    Energy Technology Data Exchange (ETDEWEB)

    Macabebe, Erees Queen B. [Department of Electronics, Computer and Communications Engineering, Ateneo de Manila University, Loyola Heights, Quezon City 1108 (Philippines); Department of Physics and Centre for Energy Research, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa); Sheppard, Charles J. [Department of Physics, University of Johannesburg, PO Box 524, Auckland Park 2006 (South Africa); Dyk, E. Ernest van [Department of Physics and Centre for Energy Research, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa)

    2011-01-15

    Device parameters such as series and shunt resistances, saturation current and diode ideality factor influence the behaviour of the current-voltage (I-V) characteristics of solar cells and photovoltaic modules. It is necessary to determine these parameters since performance parameters are derived from the I-V curve and information provided by the device parameters are useful in analyzing performance losses. This contribution presents device parameters of CuIn(Se,S){sub 2}- and Cu(In,Ga)(Se,S){sub 2}-based solar cells, as well as, CuInSe{sub 2}, mono- and multicrystalline silicon modules determined using a parameter extraction routine that employs Particle Swarm Optimization. The device parameters of the CuIn(Se,S){sub 2}- and Cu(In,Ga)(Se,S){sub 2}-based solar cells show that the contribution of recombination mechanisms exhibited by high saturation current when coupled with the effects of parasitic resistances result in lower maximum power and conversion efficiency. Device parameters of photovoltaic modules extracted from I-V characteristics obtained at higher temperature show increased saturation current. The extracted values also reflect the adverse effect of temperature on parasitic resistances. The parameters extracted from I-V curves offer an understanding of the different mechanisms involved in the operation of the devices. The parameter extraction routine utilized in this study is a useful tool in determining the device parameters which reveal the mechanisms affecting device performance. (author)

  7. Multiple steady state current-voltage characteristics in drift-diffusion modelisation of N type and semi-insulating GaAs Gunn structures

    Science.gov (United States)

    Manifacier, J. C.

    2010-12-01

    Theoretical and numerical investigations of carriers transport in N-Semi-Insulating (SI)-N and P-SI-P diodes is extended to the case of extrinsic (N type) or SI samples with Gunn like electric field dependent mobilities. The results obtained in a preceding publication [1] are valid as long as the bulk electric field does not increase above a threshold field E th associated with the beginning of negative electron differential mobility values: μ n,diff = ( dv n/ dE) diodes. SI(N -) characterizes a SI layer which keeps, under applied bias, a free electron concentration close to its thermal equilibrium value up to the beginning of electron space charge injection. A systematic study has been made by varying the contact boundary properties: flat band, metallic, N + or P +; the length of the sample and the electric parameters of the deep compensating trap of the SI layers. We show that these steady state numerical instabilities are related to the existence of multiple current-voltage solutions when numerical modelisation is made using the drift-diffusion model.

  8. 钙钛矿太阳能电池中S形伏安特性研究∗%S-shap ed current-voltage characteristics in p erovskite solar cell

    Institute of Scientific and Technical Information of China (English)

    石将建; 孟庆波; 卫会云; 朱立峰; 许信; 徐余颛; 吕松涛; 吴会觉; 罗艳红; 李冬梅

    2015-01-01

    Analysis of the DC current-voltage (I-V ) characteristics is an effective approach to investigate the charge transport properties in a solar cell. The perovskite solar cell attracted wide research interest in the past two years due to their outstanding photovoltaic capacity. However, the charge transport characteristics and working principles of this kind of cells have not been clearly clarified. In this work, the I-V characteristics of the perovskite solar cell have been investigated from the experimental and theoretical perspective views. Moreover, the S-shaped I-V feature coming from the limitation of interfacial charge transport was focused on. With a series connected diode model, the I-V characteristics of the solar cell are investigated and simulated. It is found that the charge accumulation appears gradually when the interfacial charge transport velocity is decreased, lowering the output of the cell. When the interfacial charge transport decreases gradually, the short-circuit current density and the fill factor of the cell also decrease obviously. In experiments, limitations of charge transport at the front and back contacts of the cell have been designed, successfully producing varied S-shaped I-V features. It is found that both in the hole transport material-free and in the p-i-n perovskite solar cells, the S-shaped I-V characteristics can appear. Moreover, the origins of these features in various experimental conditions have also been discussed, which can be the energy barriers or large charge transport resistances in the cell. These energy barriers and resistances will lower the charge transport velocity and may cause charge accumulation, thus leading to the appearence of the S-shaped features. Meanhiwle, the emerging S-shaped I-V curves all have their own features, which may be due to the specific interfacial energy band structures. Thus, to promote the cell performance, the charge transport and interface energy barrier should be attached importance to

  9. Modelling of current-voltage characteristics of infrared photo-detectors based on type – II InAs/GaSb super-lattice diodes with unipolar blocking layers

    Directory of Open Access Journals (Sweden)

    Vishnu Gopal

    2015-09-01

    Full Text Available It is shown that current-voltage characteristics of infrared photo-detectors based on type-II InAs/GaSb super-lattices with uni-polar blocking layers can be modelled similar to a junction diode with a finite series resistance on account of blocking barriers. As an example this paper presents the results of a study of current-voltage characteristics of a type II InAs/GaSb super-lattice diode with PbIbN architecture using a recently proposed [J. Appl. Phys. 116, 084502 (2014] method for modelling of illuminated photovoltaic detectors. The thermal diffusion, generation – recombination (g-r, and ohmic currents are found as principal components besides a component of photocurrent due to background illumination. The experimentally observed reverse bias diode current in excess of thermal current (diffusion + g-r, photo-current and ohmic shunt current is reported to be best described by an exponential function of the type, Iexcess = Ir0 + K1exp(K2 V, where Ir0, K1 and K2 are fitting parameters and V is the applied bias voltage. The present investigations suggest that the exponential growth of excess current with the applied bias voltage may be taking place along the localized regions in the diode. These localized regions are the shunt resistance paths on account of the surface leakage currents and/or defects and dislocations in the base of the diode.

  10. The current-voltage characteristics of polymer/C60 diodes in the dark: A direct way to assess photovoltaic devices efficiency parameters

    Science.gov (United States)

    Koehler, M.; Yamamoto, N. A. D.; Macedo, A. G.; Grodniski, D. Z.; Roman, L. S.; da Luz, M. G. E.

    2013-07-01

    A general description of dark transport properties in bi-layer organic photovoltaic devices formed by a heterojunction of a semiconducting co-polymer and fullerene (C60) is presented. The copolymers are composed of thiophene, phenylene, and fluorene units, where the thiophene content is kept constant while the fluorene/phenylene ratio is varied. Measurements show that the j × V characteristics display typical diode behavior (exponential increasing) at low and are space-charge limited at high voltages. Extending a theoretical analysis by Koehler et al. [J. Appl. Phys. 92, 5575 (2002)], a model which assumes a space-charge dependent inner series resistance—attributed to molecular and morphological aspects of the materials—is proposed. It turns out to be general and able to nicely fit the experimental curves for all the studied samples. Furthermore, the model quantifies relevant parameters (the effective mobility and the diode reverse saturation current j0) which will determine the systems efficiency. The framework hence allows to foremost the devices functioning under illumination from direct experiments of the active material in the dark.

  11. Breakpoint region in the IV-characteristics of intrinsic Josephson junctions

    Science.gov (United States)

    Shukrinov, Yu M.; Mahfouzi, F.

    2008-02-01

    We study theoretically the IV-characteristics of intrinsic Josephson junctions in HTSC. We solve numerically a set of differential equations for N intrinsic Josephson junctions and investigate the nonlinear dynamics of the system. The charging effect is taken into account. We demonstrate that the breakpoint region in the current-voltage characteristics naturally follows from the solution of the system of the dynamical equations for the phase difference. In the breakpoint region the plasma mode is a stationary solution of the system and this fact might be used in some applications, particularly, in high frequency devices such as THz oscillators and mixers.

  12. Study of current-voltage characteristics of ferromagnetic α-Fe{sub 1.64}Ga{sub 0.36}O{sub 3} oxide under magnetic fields

    Energy Technology Data Exchange (ETDEWEB)

    Vijayasri, G., E-mail: vsvijiguna.physics@gmail.com; Bhowmik, R. N. [Department of Physics, Pondicherry University, R..Venkataraman Nagar, Kalapet, Puducherry – 605 014 (India)

    2015-06-24

    We report the influence of magnetic field on I-V characteristics of α-Fe{sub 1.64}Ga{sub 0.36}O{sub 3} sample. Synchrotron X-ray diffraction pattern and Raman Spectroscopy have confirmed rhombohedral structure with space group R3C in the sample. The sample exhibits ferromagnetic feature at room temperature and non saturation of magnetization up to 7Tesla suggests the effect of non-collinear structure (canting) of the spins on the ferromagnetic properties. We have recorded I-V characteristics of the sample under magnetic field to study the effect of non-collinear spin structure on the electrical properties. Space charge limited current mechanism controlled the nature of non-linear I-V curves and the curves are significantly affected by magnetic field.

  13. Observation of step structures in the I-V characteristics of YBCO thin films

    Science.gov (United States)

    Azoulay, J.; Verdyan, A.; Lapsker, I.

    1997-08-01

    Many electrical properties of the high Tc superconductors are widely probed utilizing current-voltage characteristics because of its sensitivity to the phase transition. In this work we report on detailed study of YBCO I-V characteristics shape above the critical current in the phase transition vicinity. For a given temperature controlled to a better than 10mK stability over the whole I-V cycle, the applied current has been gradually increased to exceed the critical current. The system has thus been driven to cross over to the mixed state. Using dI/dV versus V plots, it is shown that all the curves are characterized by a fine step structures at current densities higher than the critical ones.

  14. Verification of a thermal interpretation of BSCCO-2223/Ag current voltage hysteresis

    Science.gov (United States)

    Sastry, P. V. P. S. S.; Nguyen, D. N.; Usak, P.; Schwartz, J.

    2004-03-01

    The current-voltage characteristic hysteresis of Bi-2223 tape in a silver matrix cooled by liquid nitrogen (LN2) at 77 K can be interpreted thermally, i.e. while the ramping-up temperature of the tape is higher than the ramping-down temperature for the same current levels. The reason for this could be hysteresis of the heat transfer coefficient. The coefficient is smaller during ramping up and larger (better cooling) during ramping down. To verify or deny this concept we have measured the surface temperature of the tape at LN2 temperature with and without a thermal insulation sheet upon the tape during ramping up over Ic and ramping down back under Ic. Different ramping rates were applied. The amplitudes of E on the tape was under 0.5 mV cm-1. In spite of measurement error and thermal fluctuations, we observed a difference between the surface temperature curve branch during ramping up and the higher branch during ramping down for a non-insulated tape. Furthermore, the measurements showed that a positive current-voltage (I-V) hysteresis pattern (with the down branch shifted to higher currents and smaller voltages) was observed even with thermal insulation. Under these conditions, however, the down branch of the temperature curve clearly revealed a higher temperature with respect to the up branch of the temperature, contrary to expectations of the thermal interpretation of I-V hysteresis. According to this result, the thermal concept of positive I-V hysteresis under stable cooling conditions can be denied. On the other hand, an accidental voltage drop in the I-V curve was observed on one degraded sample accompanied by a corresponding drop in temperature. This proves the thermal interpretation of voltage drops in I-V curves of locally degraded tapes.

  15. Verification of a thermal interpretation of BSCCO-2223/Ag current-voltage hysteresis

    Energy Technology Data Exchange (ETDEWEB)

    Sastry, P V P S S [Center for Advanced Power Systems, Florida State University, Tallahassee, FL 32310 (United States); Nguyen, D N [Center for Advanced Power Systems, Florida State University, Tallahassee, FL 32310 (United States); Usak, P [Institute of Electrical Engineering, Slovak Academy of Sciences, Dubravska cesta 9, Bratislava, Sk84239 (Slovakia); Schwartz, J [Center for Advanced Power Systems, Florida State University, Tallahassee, FL 32310 (United States)

    2004-03-01

    The current-voltage characteristic hysteresis of Bi-2223 tape in a silver matrix cooled by liquid nitrogen (LN{sub 2}) at 77 K can be interpreted thermally, i.e. while the ramping-up temperature of the tape is higher than the ramping-down temperature for the same current levels. The reason for this could be hysteresis of the heat transfer coefficient. The coefficient is smaller during ramping up and larger (better cooling) during ramping down. To verify or deny this concept we have measured the surface temperature of the tape at LN{sub 2} temperature with and without a thermal insulation sheet upon the tape during ramping up over I{sub c} and ramping down back under I{sub c}. Different ramping rates were applied. The amplitudes of E on the tape was under 0.5 mV cm{sup -1}. In spite of measurement error and thermal fluctuations, we observed a difference between the surface temperature curve branch during ramping up and the higher branch during ramping down for a non-insulated tape. Furthermore, the measurements showed that a positive current-voltage (I-V) hysteresis pattern (with the down branch shifted to higher currents and smaller voltages) was observed even with thermal insulation. Under these conditions, however, the down branch of the temperature curve clearly revealed a higher temperature with respect to the up branch of the temperature, contrary to expectations of the thermal interpretation of I-V hysteresis. According to this result, the thermal concept of positive I-V hysteresis under stable cooling conditions can be denied. On the other hand, an accidental voltage drop in the I-V curve was observed on one degraded sample accompanied by a corresponding drop in temperature. This proves the thermal interpretation of voltage drops in I-V curves of locally degraded tapes.

  16. Diagnostics of defects in AlGaN/GaN high electron mobility transitor (HEMT) epi-layers via spectroscopic photo current-voltage (IV) measurements with variable-wavelength ultraviolet (UV) and visible light excitation

    Science.gov (United States)

    Khanal, Min P.; Ozden, Burcu; Mirkhani, Vahid; Yapabandara, Kosala; Shehzad Sultan, Muhammad; Park, Minseo; Shen, Li

    The reliability and performance of the nitride high electron mobility transistors (HEMTs) have been plagued by deleterious phenomena such as current collapse which is believed to be produced by electrically-active deep-level defects (or traps) that reside at the surface/interfaces and in the bulk of the AlGaN/GaN HEMT layers. Therefore, identification of their physical/spectral locations and understanding the nature of defects is very important to improve the reliability of AlGaN/GaN HEMTs. In this work, deep-level defects and traps located in the AlGaN/GaN HEMT epi-layers were investigated by using spectroscopic photo IV measurements. An array of Schottky contacts was constructed on the HEMT layer produced by metal-organic chemical vapor deposition (MOCVD). The photo IV measurement was performed by collecting the photo current generated by the variable-wavelength UV/visible light illumination. It was successfully demonstrated that this technique can provide the information on the distribution of electrically-active defects along the in-depth direction and across the HEMT wafers. Therefore, it can be concluded that the spectroscopic measurements can be useful to assess the uniformity of defect distribution both along the in-depth direction and across the AlGaN/GaN wafers. Corresponding author.

  17. Current-voltage curves of gold quantum point contacts revisited

    DEFF Research Database (Denmark)

    Hansen, K.; Nielsen, S K.; Brandbyge, Mads;

    2000-01-01

    We present measurements of current-voltage (I-V) curves on gold quantum point contacts (QPCs) with a conductance up to 4 G(0) (G(0) = 2e(2)/h is the conductance quantum) and voltages up to 2 V. The QPCs are formed between the gold tip of a scanning tunneling microscope and a Au(110) surface under...... clean ultra-high-vacuum conditions at room temperature. The I - V curves are found to he almost linear in contrast to previous reports. Tight-binding calculations of I - V curves for one- and two-atom contacts are in excellent agreement with our measurements. On the other hand, clearly nonlinear I - V...

  18. I-V characteristics simulation of silicon carbide Ti/4H-SiC Schottky diode

    Science.gov (United States)

    Panchenko, P.; Rybalka, S.; Malakhanov, A.; Krayushkina, E.; Radkov, A.

    2016-12-01

    The simulation of current-voltage characteristics for 4H-SiC Schottky diode with Ti Schottky contact has been carried out with used of TCAD program. Obtained current-voltage characteristics has been analyzed and compared with theoretical and experimental results. It is established that the Schottky diode parameters (forward current, ideality coefficient, Schottky barrier height, breakdown voltage) obtained in proposed model are good agreement with data for such type diodes.

  19. Double threshold behaviour of I-V characteristics of CoSi2/Si Schottky contacts

    Institute of Scientific and Technical Information of China (English)

    Zhu Shi-Yang(竺士炀); Ru Guo-Ping(茹国平); Qu Xin-Ping(屈新萍); Li Bing-Zong(李炳宗); R.L.Van Meirhaeghe; C.Detavernier; F.Cardon

    2002-01-01

    The forward current-voltage (I-V) characteristics of polycrystalline CoSi2/n-Si(100) Schottky contacts have beenmeasured in a wide temperature range. At low temperatures (≤200K), a plateau-like section is observed in the I-Vmodel based on thermionic emission (TE) and a Gaussian distribution of Schottky barrier height (SBH). Such a doublethreshold behaviour can be explained by the barrier height inhomogeneity, i.e. at low temperatures the current throughpatches with low SBH dominates at small bias region With increasing bias voltage, the Ohmic effect becomes someimportant and the current through the whole junction area exc eeds the patch current, thus resulting in a plateau-likesection in the I-V curves at moderate bias. For the polycrystalline CoSi2/Si contacts studied in this paper, the apparentideality factor of the patch current is much larger than that calculated from the TE model taking the pinch-off effectinto account. This suggests that the current flowing through these patches is of the tunnelling type, rather than thethermionic emission type. The experimental I-V characteristics can be fitted reasonably well in the whole temperatureregion using the model based on tunnelling and pinch-off.

  20. Branch structure of IV-characteristics in the capacitively coupled Josephson junctions model with the diffusion current

    Energy Technology Data Exchange (ETDEWEB)

    Shukrinov, Yu.M. [Joint Institute for Nuclear Research, 141980 Dubna (Russian Federation); Physical Technical Institute, Dushanbe 734063 (Tajikistan)], E-mail: shukrinv@theor.jinr.ru; Mahfouzi, F. [Institute for Advanced Studies in Basic Sciences, P.O. Box 45195-1159, Zanjan (Iran, Islamic Republic of); Seidel, P. [Institut fuer Festkorperphysik, Friedrich-Schiller-Universitaet Jena, D-07743 Jena (Germany)

    2007-09-01

    We have solved numerically a system of dynamical equations for the gauge-invariant phase differences between superconducting layers for a stack of N intrinsic junctions and obtained a total branch structure in the current-voltage characteristics (IVC) of the stack. The coupling dependence of the branch's slopes is investigated and demonstrated that the equidistance of the branch structure in capacitively coupled Josephson junctions (CCJJ) model is broken at small values of coupling parameter. Changes in the parameters of the boundary conditions and the use of periodic boundary conditions do not affect this result. In the framework of the CCJJ model with the diffusion current we simulate an experiment and obtain the IV-characteristic with equidistant branch structure at different values of model parameters.

  1. Branch structure of IV-characteristics in the capacitively coupled Josephson junctions model with the diffusion current

    Science.gov (United States)

    Shukrinov, Yu. M.; Mahfouzi, F.; Seidel, P.

    2007-09-01

    We have solved numerically a system of dynamical equations for the gauge-invariant phase differences between superconducting layers for a stack of N intrinsic junctions and obtained a total branch structure in the current-voltage characteristics (IVC) of the stack. The coupling dependence of the branch’s slopes is investigated and demonstrated that the equidistance of the branch structure in capacitively coupled Josephson junctions (CCJJ) model is broken at small values of coupling parameter. Changes in the parameters of the boundary conditions and the use of periodic boundary conditions do not affect this result. In the framework of the CCJJ model with the diffusion current we simulate an experiment and obtain the IV-characteristic with equidistant branch structure at different values of model parameters.

  2. The PPTN-02 new-generation current-voltage transducers for measuring of photosignals

    Directory of Open Access Journals (Sweden)

    Butenko V. K.

    2008-02-01

    Full Text Available The measurement results of technical characteristics of new-generation current-voltage transducers which have low input resistance (<10 Оhm and providing ptotodiodes photocurrent measurement from 1·10-12 to 1·10-3 A are presented.

  3. Variable Temperature Current-Voltage Measurements of CdTe Solar Cells

    Science.gov (United States)

    Smith, A. D.

    2000-03-01

    We have used a 2" x 2" Peltier heat pump chip powered with 24 V from a computer power supply to build a variable temperature stage for current voltage measurements of solar cells. A voltage divider was used to achieve several different set point temperatures from 25 oC to -24 oC. This system was used with a halogen lamp to study the electrical performance of polycrystalline thin-film solar cells fabricated in our group. These cells have the superstrate structure glass/SnO2:F/CdS/CdTe/metal.(1) The I-V characteristic shows evidence of a blocking back-diode which sets in below room temperature. This behavior will be related to the diffusion into the CdTe of the metals used for our back contact.(2) 1. M. Shao, A. Fischer, D. Grecu, U. Jayamaha, E. Bykov, G. Contreras-Puente, R.G. Bohn, and A.D. Compaan, Appl. Phys. Lett. 69, 3045-3047 (1996). 2. D. Grecu and A.D. Compaan, Appl. Phys. Lett. 75, 361-363 (1999).

  4. I-V characteristics of foilless diodes

    Institute of Scientific and Technical Information of China (English)

    Liu Guo-Zhi; Huang Wen-Hua; Yang Zhan-Feng

    2005-01-01

    Some physical characteristics of foilless diodes are obtained and analysed by numerical simulations. Relations between diode current andconfiguration parameters, i.e. diode voltage and external magnetic field, are investigated.Employing these relations and assuming that the external magnetic field is strong enough, the diode current can be approximately written as Ib=(7.5/x)(x+(0.81-x)/(1+0.7Ld2/δr))(γ0 2/3-1)3/2, in which Ld is the Anode-Cathode(AK) gap, Rc the outer radius of cathode, and Rp the radius of drifting tube; x=ln(Rp/Rc), δr=Rp- Rc. This expression is comparatively accurate for different configuration parameters and voltages; results obtained from this expression are consistent with that of numerical simulations within an error of 10%.

  5. Random instabilities of current-voltage curves of BSCCO-2223/Ag multifilamentary tapes in LN2 at 77 K

    CERN Document Server

    Usak, P

    2003-01-01

    The measurement of the current-voltage (I-V) characteristics of BSCCO-2223/Ag multifilamentary tapes in a silver matrix has been performed on short samples (of several centimetres) as well as on long tape (1 m), wound in the form of a helical one-layer coil. Measurements at 77 K and in zero external magnetic field have revealed good reproducibility of the I-V hysteresis in most runs. Nevertheless, strange irregularities have sometimes been observed in the I-V curve behaviour during current ramping up and down. Quasi-reproducible drops from the ascending hysteretic branch in the direction of the descending one have been measured at higher voltage levels (approx 1 mV cm sup - sup 1) on the curve measured on the helical coil. These have recently been explained by a sudden change in the heat transfer coefficient [1]. Rarely and non-reproducibly we have also observed these drops on short samples at E approx 1 x 10 sup - sup 2 V m sup - sup 1 , (and even under 1 x 10 sup - sup 3 V m sup - sup 1). The accidental dro...

  6. Current-voltage curves of atomic-sized transition metal contacts: An explanation of why Au is ohmic and Pt is not

    DEFF Research Database (Denmark)

    Nielsen, S.K.; Brandbyge, Mads; Hansen, K.

    2002-01-01

    We present an experimental study of current-voltage (I-V) curves on atomic-sized Au and Pt contacts formed under cryogenic vacuum (4.2 K). Whereas I-V curves for Au are almost Ohmic, the conductance G=I/V for Pt decreases with increasing voltage, resulting in distinct nonlinear I-V behavior...

  7. Current-voltage model of LED light sources

    DEFF Research Database (Denmark)

    Beczkowski, Szymon; Munk-Nielsen, Stig

    2012-01-01

    Amplitude modulation is rarely used for dimming light-emitting diodes in polychromatic luminaires due to big color shifts caused by varying magnitude of LED driving current and nonlinear relationship between intensity of a diode and driving current. Current-voltage empirical model of light...

  8. Investigations on the electrical current-voltage response in protein light receptors

    CERN Document Server

    Alfinito, E; Reggiani, L

    2014-01-01

    We report a theoretical/computational approach for modeling the current-voltage characteristics of sensing proteins. The modeling is applied to a couple of transmembrane proteins, bacteriorhodopsin and proteorhodopsin, sensitive to visible light and promising biomaterials for the development of a new generation of photo-transducers. The agreement between theory and experiments sheds new light on the microscopic interpretation of charge transfer in proteins and biological materials in general.

  9. Driver for solar cell i-v characteristic plots

    Energy Technology Data Exchange (ETDEWEB)

    Turner, G.B.

    1980-01-15

    A bipolar voltage ramp generator applies a linear voltage through a resistor to a solar cell for plotting its current versus voltage (I-v) characteristic between short circuit and open circuit conditions, with automatic stops at the end points. The resistor serves the multiple purpose of providing a current sensing resistor, setting the full-scale current value, and providing a load line with a slope approximately equal to one, such that it will pass through the origin and the approximate center of the i-v curve with about equal distance from that center to each of the end points.

  10. Experimental observation of direct current voltage-induced phase synchronization

    Indian Academy of Sciences (India)

    Haihong Li; Weiqing Liu; Qiongling Dai; Jinghua Xiao

    2006-09-01

    The dynamics of two uncoupled distinct Chua circuits driven by a common direct current voltage is explored experimentally. It was found that, with increasing current intensity, the dominant frequencies of these two Chua circuits will first vary at different speeds, approach an identical value for a certain current intensity and then separate. Techniques such as synchronization index and phase difference distribution were employed to analyze the phase coherence between these two Chua circuits.

  11. Electrical Characteristics of Co/n-Si Schottky Barrier Diodes Using I-V and C-V Measurements

    Institute of Scientific and Technical Information of China (English)

    G.Gfüler; (O).Güllü; (S).Karata(s); (O).F.Bakkalo(g)lu

    2009-01-01

    Electrical characteristics of Co/n-Si Schottky barrier diodes are analysed by current-voltage (I- V) and capacitancevoltage (C-V) techniques at room temperature.The electronic parameters such as ideality factor,barrier height and average series resistance are determined.The barrier height 0.76 eV obtained from the C-V measurements is higher than that of the value 0.70 eV obtained from the I-V measurements.The series resistance Rs and the ideality factor n are determined from the d ln( I ) / dV plot and are found to be 193.62Ω and 1.34,respectively.The barrier height and the Rs value are calculated from the H(I) - I plot and are found to be 0.71 eV and 205.95Ω.Furthermore,the energy distribution of the interface state density is determined from the forward bias I-V characteristics by taking into account the bias dependence of the effective barrier height.The interface state density Nss ranges from 6.484×1011 cm-2eV-1 in (Ec-0.446) eV to 2.801×1010 cm-2eV-1 in (Ec-0.631) eV,of the Co/n-Si Schottky barrier diode.The results show the presence of a thin interracial layer between the metal and the semiconductor.

  12. A linear auroral current-voltage relation in fluid theory

    Directory of Open Access Journals (Sweden)

    J. Vedin

    2004-04-01

    Full Text Available Progress in our understanding of auroral currents and auroral electron acceleration has for decades been hampered by an apparent incompatibility between kinetic and fluid models of the physics involved. A well established kinetic model predicts that steady upward field-aligned currents should be linearly related to the potential drop along the field line, but collisionless fluid models that reproduce this linear current-voltage relation have not been found. Using temperatures calculated from the kinetic model in the presence of an upward auroral current, we construct here approximants for the parallel and perpendicular temperatures. Although our model is rather simplified, we find that the fluid equations predict a realistic large-scale parallel electric field and a linear current-voltage relation when these approximants are employed as nonlocal equations of state. This suggests that the concepts we introduce can be applied to the development of accurate equations of state for fluid simulations of auroral flux tubes.

    Key words. Magnetospheric physics (auroral phenomena; magnetosphere-ionosphere interactions – Space plasma physics (kinetic and MHD theory

  13. Transient Response of Organo-Metal-Halide Solar Cells Analyzed by Time-Resolved Current-Voltage Measurements

    Directory of Open Access Journals (Sweden)

    M. Greyson Christoforo

    2015-11-01

    Full Text Available The determination of the power conversion efficiency of solar cells based on organo-metal-halides is subject to an ongoing debate. As solar cell devices may exhibit very slow transient response, current-voltage scans in different directions may not be congruent, which is an effect often referred to as hysteresis. We here discuss time-resolved current-voltage measurements as a means to evaluate appropriate delay times (voltage settling times to be used in current-voltage measurements of solar cells. Furthermore, this method allows the analysis of transient current response to extract time constants that can be used to compare characteristic differences between devices of varying architecture types, selective contacts and changes in devices due to storage or degradation conditions.

  14. The effect of applied control strategy on the current-voltage correlation of a solid oxide fuel cell stack during dynamic operation

    Directory of Open Access Journals (Sweden)

    Szmyd Janusz S.

    2014-09-01

    Full Text Available This paper discusses the transient characteristics of the planar type SOFC cell stack, of which the standard output is 300 W. The transient response of the voltage to the manipulation of an electric current was investigated. The effects of the response and of the operating condition determined by the operating temperature of the stack were studied by mapping a current-voltage (I-V correlation. The current-based fuel control (CBFC was adopted for keeping the fuel utilization factor at constant while the value of the electric current was ramped at the constant rate. The present experimental study shows that the transient characteristics of the cell voltage are determined by primarily the operating temperature caused by the manipulation of the current. Particularly, the slope of the I-V curve and the overshoot found on the voltage was remarkably influenced by the operating temperature. The different values of the fuel utilization factor influence the height of the settled voltages. The CBFC has significance in determining the slope of the I-V characteristic, but the different values ofthe fuel utilization factor does not affect the slope as the operating temperature does. The CBFC essentially does not alter the amplitude of the overshoot on the voltage response, since this is dominated by the operating temperature and its change is caused by manipulating the current.

  15. Modeling And Simulation of Speed and flux Estimator Based on Current & voltage Model

    Directory of Open Access Journals (Sweden)

    Dinesh Chandra Jain

    2011-10-01

    Full Text Available This paper introduce a estimator based on and current & voltage model used in induction motor (IM drive. The rotor speed estimation is based on the model reference adaptive system (MRAS approach. The closed loop control mechanism is based on the voltage and current model. The control and estimation algorithms utilize the synchronous coordinates as a frame of reference. A speed sensor less induction motor (IM drive with Robust control characteristics is introduced. First, a speed observation system, which is insensitive to the variations of motor parameters.

  16. 二极管特性简化模型在染料敏化太阳能电池电流-电压曲线拟合及在光电特性参数评估中的应用%Application of a Simplified Diode Characteristic Model in Current-Voltage Curve Fitting and Evaluation of Photoelectric Parameters within Dye-Sensitized Solar Cell

    Institute of Scientific and Technical Information of China (English)

    张平; 王弋; 付立民; 艾希成; 张建平

    2015-01-01

    In the present work, we investigated the dynamics of charge col ection and recombination in dye-sensitized solar cel s (DSSCs) spanning a large region of bias voltages using transient photoconductivity. The rate of charge col ection was much faster than that of charge recombination at varied voltages, which was responsible for the nearly uniform charge col ection efficiency. Based on this result, we simplified the diode characteristic model, which al owed us to directly fit the current-voltage (I-V) curve. A series of parameters related to the photo-to-electric processes in working DSSCs could be extracted from the proposed model, which could be used to evaluate the processes of charge generation, transport, and recombination in DSSCs, as wel as the rectification of DSSC devices. We applied the fitting method to DSSCs with different 4-tert-butyl pyridine (TBP) concentrations of electrolyte. It was found that the rate of charge recombination significantly differed while that of charge col ection was rather constant under different TBP concentrations, which was in good agreement with the results of I-V curve fitting. In addition, this research shows that the change of TBP concentration significantly affects the ideality factor (m) of DSSC devices.%利用瞬态光电导技术研究了在一个大的偏压范围内染料敏化太阳能电池(DSSC)中的电荷收集和电荷复合过程的动力学。结果表明,在不同的电压下电荷收集速率远快于电荷复合速率,用以解释电荷的收集效率几乎不变。基于这个结果,简化了DSSC二极管特性模型,从而实现了对电流-电压(I-V)曲线的直接拟合。利用这一模型拟合的结果提取出一系列与工作条件下DSSC光电转化过程相关的参数,可以用以描述包括电荷生成、电荷收集和复合以及DSSC器件的整流特性等关键性质。将这一拟合方法应用于不同叔丁基吡啶(TBP)浓度电解液的电池,获得的结果表明

  17. Nonlinear I-V characteristics of nanoparticle compacts and nanocomposites

    Energy Technology Data Exchange (ETDEWEB)

    Herth, Simone [Rensselaer Polytechnic Institute, Troy, NY (United States); Bielefeld University, Bielefeld (Germany); Wang, Xiaoping; Hugener, Teresa; Schadler, Linda; Siegel, Richard [Rensselaer Polytechnic Institute, Troy, NY (United States); Hillborg, Henrik; Auletta, Tommaso [ABB AB, Corporate Research, Schweden (Sweden)

    2007-07-01

    Materials with nonlinear I-V characteristics are commonly used as field grading materials. In many cases, the non-linearity is achieved through the addition of equiaxed fillers to a polymer matrix. These composite field grading materials are optimized in terms of nonlinearity, conductivity, and breakdown strength. One limitation in designing new field grading materials is a robust understanding of the relationship between powder morphology, composition and electrical characteristics of the powder, as well as a robust understanding of the relationship between powder conductivity and non-linearity and composite non-linearity. In this work, treatment of ZnO powder with a SnF{sub 2} solution resulted in a powder that yielded highly non-linear behavior. The highest non-linearity was achieved for powders with at least two different phases and a rough surface, as indicated by transmission electron micrographs. In contrast, the non-linearity of the nanocomposite conductivity is mainly determined by the conductivity of the nanofiller. The electrical behavior of the non-linear powder can be understood by a polarization of the nanoparticles at the interfaces, whereas the nonlinearity of the nanocomposites can be explained by a tunnelling mechanism between two particles.

  18. Current-voltage relationship in the auroral particle acceleration region

    Directory of Open Access Journals (Sweden)

    M. Morooka

    2004-11-01

    Full Text Available The current-voltage relationship in the auroral particle acceleration region has been studied statistically by the Akebono (EXOS-D satellite in terms of the charge carriers of the upward field-aligned current. The Akebono satellite often observed field-aligned currents which were significantly larger than the model value predicted by Knight (1973. We compared the upward field-aligned current estimated by three different methods, and found that low-energy electrons often play an important role as additional current carriers, together with the high-energy primary electrons which are expected from Knight's relation. Such additional currents have been observed especially at high and middle altitudes of the particle acceleration region. Some particular features of electron distribution functions, such as "cylindrical distribution functions" and "electron conics", have often been observed coinciding with the additional currents. They indicated time variability of the particle acceleration region. Therefore, we have concluded that the low-energy electrons within the "forbidden" region of electron phase space in the stationary model often contribute to charge carriers of the current because of the rapid time variability of the particle acceleration region. "Cylindrical distribution functions" are expected to be found below the time-varying potential difference. We statistically examined the locations of "cylindrical distribution function", and found that their altitudes are related to the location where the additional currents have been observed. This result is consistent with the idea that the low-energy electrons can also carry significant current when the acceleration region changes in time.

  19. A dynamic Monte Carlo study of anomalous current voltage behaviour in organic solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Feron, K., E-mail: Krishna.Feron@csiro.au; Fell, C. J. [Centre for Organic Electronics, University of Newcastle, Callaghan, NSW 2308 (Australia); CSIRO Energy Flagship, Newcastle, NSW 2300 (Australia); Zhou, X.; Belcher, W. J.; Dastoor, P. C. [Centre for Organic Electronics, University of Newcastle, Callaghan, NSW 2308 (Australia)

    2014-12-07

    We present a dynamic Monte Carlo (DMC) study of s-shaped current-voltage (I-V) behaviour in organic solar cells. This anomalous behaviour causes a substantial decrease in fill factor and thus power conversion efficiency. We show that this s-shaped behaviour is induced by charge traps that are located at the electrode interface rather than in the bulk of the active layer, and that the anomaly becomes more pronounced with increasing trap depth or density. Furthermore, the s-shape anomaly is correlated with interface recombination, but not bulk recombination, thus highlighting the importance of controlling the electrode interface. While thermal annealing is known to remove the s-shape anomaly, the reason has been not clear, since these treatments induce multiple simultaneous changes to the organic solar cell structure. The DMC modelling indicates that it is the removal of aluminium clusters at the electrode, which act as charge traps, that removes the anomalous I-V behaviour. Finally, this work shows that the s-shape becomes less pronounced with increasing electron-hole recombination rate; suggesting that efficient organic photovoltaic material systems are more susceptible to these electrode interface effects.

  20. Simulation of current-voltage curves for inverted planar structure perovskite solar cells using equivalent circuit model with inductance

    Science.gov (United States)

    Cojocaru, Ludmila; Uchida, Satoshi; Jayaweera, Piyankarage V. V.; Kaneko, Shoji; Toyoshima, Yasutake; Nakazaki, Jotaro; Kubo, Takaya; Segawa, Hiroshi

    2017-02-01

    Physical modeling of hysteretic behavior in current-voltage (I-V) curves of perovskite solar cells (PSCs) is necessary for further improving their power conversion efficiencies (PCEs). The reduction of hysteresis in inverted planar structure PSCs (p-PSCs) has been achieved by using a [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) layer. In the cases, the opposite trend of the I-V hysteresis has been observed where the forward scan shows slightly higher efficiency than the reverse scan. In this paper, an equivalent circuit model with inductance is proposed. This model consists of a Schottky diode involving a parasitic inductance focusing PCBM/Al(Ca) interface and accurately represents the opposite trend of the I-V hysteresis of the p-PSC with an inverted structure.

  1. Effects of Unintended Dopants on I-V Characteristics of the Double-Gate MOSFETs,a Simulation Study

    Institute of Scientific and Technical Information of China (English)

    李佩成; 梅光辉; 胡光喜; 王伶俐; 刘冉; 汤庭鳌

    2012-01-01

    In this paper, we study the effects of an unintended dopant in the channel on the current-voltage char-acteristics of a Double-Gate (DG) Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). Non-Equilibrium Green's Function (NEGF) approach is used. A quantum transport model to calculate the drain current is presented and subthreshold swing and drain induced barrier lowering (DIBL) effect are studied.

  2. Current-Voltage Relations for Electrochemical Thin Films

    CERN Document Server

    Bazant, M Z; Bayly, B J; Bazant, Martin Z.; Chu, Kevin T.

    2004-01-01

    The dc response of an electrochemical thin film, such as the separator in a micro-battery, is analyzed by solving the Poisson-Nernst-Planck equations, subject to boundary conditions appropriate for an electrolytic/galvanic cell. The model system consists of a binary electrolyte between parallel-plate electrodes, each possessing a compact Stern layer, which mediates Faradaic reactions with nonlinear Butler-Volmer kinetics. Analytical results are obtained by matched asymptotic expansions in the limit of thin double layers and compared with full numerical solutions. The analysis shows that (i) decreasing the system size relative to the Debye screening length decreases the voltage of the cell and allows currents higher than the classical diffusion-limited current; (ii) finite reaction rates lead to the important possibility of a reaction-limited current; (iii) the Stern-layer capacitance is critical for allowing the cell to achieve currents above the reaction-limited current; and (iv) all polarographic (current-v...

  3. Effect of band gap narrowing on GaAs tunnel diode I-V characteristics

    Science.gov (United States)

    Lebib, A.; Hannanchi, R.; Beji, L.; EL Jani, B.

    2016-12-01

    We report on experimental and theoretical study of current-voltage characteristics of C/Si-doped GaAs tunnel diode. For the investigation of the experimental data, we take into account the band-gap narrowing (BGN) effect due to heavily-doped sides of the tunnel diode. The BGN of the n- and p-sides of tunnel diode was measured by photoluminescence spectroscopy. The comparison between theoretical results and experimental data reveals that BGN effect enhances tunneling currents and hence should be considered to identify more accurately the different transport mechanisms in the junction. For C/Si-doped GaAs tunnel diode, we found that direct tunneling is the dominant transport mechanism at low voltages. At higher voltages, this mechanism is replaced by the rate-controlling tunneling via gap states in the forbidden gap.

  4. Effect of band gap narrowing on GaAs tunnel diode I-V characteristics

    Energy Technology Data Exchange (ETDEWEB)

    Lebib, A.; Hannanchi, R. [Laboratoire d' énergie et de matériaux, LabEM-LR11ES34-Université de sousse (Tunisia); Beji, L., E-mail: lotbej_fr@yahoo.fr [Laboratoire d' énergie et de matériaux, LabEM-LR11ES34-Université de sousse (Tunisia); EL Jani, B. [Unité de Recherche sur les Hétéro-Epitaxies et Applications, Faculté des Sciences, Université de Monastir, 5019 Monastir (Tunisia)

    2016-12-01

    We report on experimental and theoretical study of current-voltage characteristics of C/Si-doped GaAs tunnel diode. For the investigation of the experimental data, we take into account the band-gap narrowing (BGN) effect due to heavily-doped sides of the tunnel diode. The BGN of the n- and p-sides of tunnel diode was measured by photoluminescence spectroscopy. The comparison between theoretical results and experimental data reveals that BGN effect enhances tunneling currents and hence should be considered to identify more accurately the different transport mechanisms in the junction. For C/Si-doped GaAs tunnel diode, we found that direct tunneling is the dominant transport mechanism at low voltages. At higher voltages, this mechanism is replaced by the rate-controlling tunneling via gap states in the forbidden gap.

  5. Observation and investigation of a dynamic inflection point in current-voltage curves for roll-to-roll processed polymer photovoltaics

    DEFF Research Database (Denmark)

    Medford, Andrew James; Lilliedal, Mathilde Raad

    2010-01-01

    Inflection point behaviour is often observed in the current-voltage (IV) curve of polymer and organic solar cells. This phenomenon is examined in the context of flexible roll-to-roll (R2R) processed polymer solar cells in a large series of devices with a layer structure of: PET-ITO-ZnO-P3HT......:PCBM-PEDOT:PSS-Ag. The devices were manufactured using a combination of slot-die coating and screen printing; they were then encapsulated by lamination using a polymer based barrier material. All manufacturing steps were carried out in ambient air. The freshly prepared devices showed a consistent inflection point in the IV...

  6. Effect of the mobility on (I-V) characteristics of the MOSFET

    Energy Technology Data Exchange (ETDEWEB)

    Benzaoui, Ouassila, E-mail: o-benzaoui@yahoo.fr [Technology Department, Faculty of Technology, 20 August 1955 University, BP 26, El-Hadaiek Street 21000 Skikda, Algeria and Department of Physics, Faculty of Science, Thin Films and Interfaces Laboratory, P. B 325, Ain El Bey Street, Mentouri Univers (Algeria); Azizi, Cherifa, E-mail: aziziche@yahoo.fr [Department of Material Sciences, Larbi Ben M' hidi University, BP 358, Constantine Street, 04000 Oum El-Bouaghi, Algeria and Department of Physics, Faculty of Science, Thin Films and Interfaces Laboratory, P. B 325, Ain El Bey Street, Mentouri Univers (Algeria)

    2013-12-16

    MOSFET Transistor was the subject of many studies and research works (electronics, data-processing, telecommunications...) in order to exploit its interesting and promising characteristics. The aim of this contribution is devoted to the effect of the mobility on the static characteristics I-V of the MOSFET. The study enables us to calculate the drain current as function of bias in both linear and saturated modes; this effect is evaluated using a numerical simulation program. The influence of mobility was studied. Obtained results allow us to determine the mobility law in the MOSFET which gives optimal (I-V) characteristics of the component.

  7. Clinical characteristics of patients with Rutherford category IV, compared with V and VI

    Directory of Open Access Journals (Sweden)

    Taketsugu Tsuchiya

    2015-07-01

    Full Text Available Objective: Patients categorized Rutherford category IV might have different characteristics compared with Rutherford category V and VI. Our study aims were to estimate the clinical differences between Rutherford category IV and Rutherford category V and VI, for those underwent endovascular therapy for isolated infrapopliteal disease, and also to find risk factors for endovascular therapy in Rutherford category IV. Methods: Based on the Japanese multi-center registry data, 1091 patients with 1332 limbs (Rutherford category IV: 226 patients with 315 limbs, Rutherford category V and VI: 865 patients with 1017 limbs were analyzed retrospectively. Results: Patients’ backgrounds and lesions’ characteristics had significant differences. Both freedom rate from major adverse limb event with perioperative death and amputation-free survival rate at 1 year were better in Rutherford category IV than Rutherford category V and VI (93.6% vs 78.3%, 87.7% vs 66.7% and those maintained to 3 years (p  3.0 mg/dL, chronic obstructive pulmonary disease, and coronary artery disease in Rutherford category IV. Conclusion: From the present results, Rutherford category IV should be recognized to have quite different backgrounds and better outcome from Rutherford category V and VI.

  8. Elucidation of barrier homogeneity in ZnO/P3HT:PCBM junctions through temperature dependent I-V characteristics

    Science.gov (United States)

    Khare, Neeraj; Zubair Ansari, Mohd; Hoye, Robert L. Z.; Iza, Diana C.; MacManus-Driscoll, Judith L.

    2016-07-01

    The current-voltage (I-V) characteristics of ZnO/P3HT:PCBM junctions using as-deposited ZnO and 300 °C-annealed ZnO (prior to device fabrication) were probed as a function of temperature. The ZnO films were synthesized using two scalable, low temperature methods: Atmospheric pressure spatial atomic layer deposition (AP-SALD) and electrodeposition (ED). In both cases the zero bias Schottky barrier height ({Φ\\text{B}} ) decreases and ideality factor (n) increases with a reduction in the operating temperature of the junctions. This was attributed to the presence of barrier inhomogeneities at the interface from surface states/defects in the ZnO causing a localized variation of work function. For the as-deposited ZnO junctions, two mean barrier heights, arising from a large density of surface states was observed. For the annealed ZnO junction one mean barrier height was observed, indicating reduction in the inhomogeneities of barrier height at the interface for the annealed ZnO. The photoresponce of ZnO/P3HT:PCBM junction was higher for the annealed ZnO which is due to the higher mean barrier height and lower value of ideality factor. This demonstrates that moderate annealing of chemically grown ZnO is crucial for reducing surface defects and barrier inhomogeneities.

  9. Ab initio I-V characteristics of short C-20 chains

    DEFF Research Database (Denmark)

    Roland, C.; Larade, B.; Taylor, Jeremy Philip

    2002-01-01

    We have calculated the I-V characteristics of short chains of C-20 molecular cages between Al and Au leads with an ab initio formalism. The results indicate that a linear chain of such molecules acts primarily as metallic nanowires. The transmission, however, depends sensitively both on the orien......We have calculated the I-V characteristics of short chains of C-20 molecular cages between Al and Au leads with an ab initio formalism. The results indicate that a linear chain of such molecules acts primarily as metallic nanowires. The transmission, however, depends sensitively both...

  10. Light regulated I-V hysteresis loop of Ag/BiFeO3/FTO thin film

    Science.gov (United States)

    Wei, Lujun; Sun, Bai; Zhao, Wenxi; Li, Hongwei; Chen, Peng

    2017-01-01

    A hysteresis loop of current-voltage characteristics based multiferroic BiFeO3 nanoribbons memory device is observed. Moreover, the white-light can greatly regulate both the current-voltage hysteresis loop and the ferroelectric hysteresis loop. The stored space charges within the electrodes/BiFeO3 interface can lead to hysteresis-type I-V characteristics of Ag/BiFeO3/FTO devices. The white-light controlled I-V loop and ferroelectric loop result from photon-generated carries. Since the I-V hysteresis loop and ferroelectric hysteresis loop have a potential application prospect to the memory devices, these two white-light controlled the hysteresis loops curves are likely to provide promising opportunity for developing the multi-functional memory devices.

  11. Bidirectional current-voltage converters based on magnetostrictive/piezoelectric composites

    NARCIS (Netherlands)

    Jia, Y.; Or, S.W.; Chan, H.L.W.; Jiao, J.; Luo, H.; Van der Zwaag, S.

    2009-01-01

    We report a power supply-free, bidirectional electric current-voltage converter based on a coil-wound laminated composite of magnetostrictive alloy and piezoelectric crystal. An electric current applied to the coil induces a magnetic field, resulting in an electric voltage from the composite due to

  12. Current-voltage curve of a bipolar membrane at high current density

    NARCIS (Netherlands)

    Aritomi, T.; Boomgaard, van den Th.; Strathmann, H.

    1996-01-01

    The potential drop across a bipolar membrane was measured as a function of the applied current density. As a result, an inflection point was observed in the obtained current-voltage curve at high current density. This inflection point indicates that at high current densities water supply from outsid

  13. Current-voltage relation for thin tunnel barriers: Parabolic barrier model

    DEFF Research Database (Denmark)

    Hansen, Kim; Brandbyge, Mads

    2004-01-01

    We derive a simple analytic result for the current-voltage curve for tunneling of electrons through a thin uniform insulating layer modeled by a parabolic barrier. Our model, which goes beyond the Wentzel–Kramers–Brillouin approximation, is applicable also in the limit of highly transparant barri...

  14. Current-voltage curve of a bipolar membrane at high current density

    NARCIS (Netherlands)

    Aritomi, T.; van den Boomgaard, Anthonie; Strathmann, H.

    1996-01-01

    The potential drop across a bipolar membrane was measured as a function of the applied current density. As a result, an inflection point was observed in the obtained current-voltage curve at high current density. This inflection point indicates that at high current densities water supply from

  15. Negative-Resistance Characteristics Analysis of Poly-Silicon Resistors Formed on the Flow Sensor

    Institute of Scientific and Technical Information of China (English)

    Dianzhong Wen

    2006-01-01

    In this paper we put forward a new concept about effective trapping center concentration NeT which is decreasing with the trapped charge Q corresponding to index movement, based on that, we discuss the I-V and temperature characteristics of polysilicon resistors. The new concept presents ideal theoretical interpretion for the originally observed current-voltage negative-resistance characteristics of polysilicon resistors formed on the flow sensor, and also for poly-silicon film resistors.The final results agree well with the theoretical current-voltage characteristics.

  16. Annealing effect on I-V characteristic of n-ZnO-p-InSe heterojunction

    Directory of Open Access Journals (Sweden)

    Kovalyuk Z. D.

    2015-12-01

    Full Text Available The article is devoted to studying of influence of vacuum low-temperature annealing on the electrical and photoelectric characteristics of n-ZnO-p-InSe heterostructure. Indium monoselenide (InSe is a semiconductor of the A3B6 group of layered compounds. The basic unit consists of two planes of metal atoms sandwiched between two planes of chalcogen atoms (Se-In-In-Se. The absence of dangling bonds on InSe cleaved surface makes it possible to use this semiconductor as a substrate for fabrication of heterostructures based on semiconductor materials with different symmetries and lattice spacings. Zinc oxide (ZnO is the most suitable material for window materials and solar cells buffer layers application due to its marvelous transparency in the range of visible region. InSe single crystals were grown by the Bridgman technique from a nonstoichiometric melt and characterized by a pronounced layered structure along the whole length of a sample. ZnO thin oxide film was formed on freshly cleaved van der Waals surface of InSe layered crystal. n-ZnO-p-InSe heterostructure was prepared by the method of high-frequency magnetron sputtering. Sensitivity spectral areas were identified by MDR-3 monochromator with a resolution of 2.6 nm/mm. The current-voltage characteristics of the n-ZnO-p-InSe heterostructures showed a clearly pronounced diode character. In the forward bias of the initial samples, the diode factor had the value 3.7 at room temperature. It is shown that vacuum low-temperature annealing reduces shunt currents of the heterojunction, which is reflected in the decrease in the values of n from 3.7 to 2.7.

  17. Characterization of three types of silicon solar cells for SEPS deep space missions. Volume 1: Current-voltage characteristics of OCLI BSF/BSR 10 ohm-cm, and BSR 2 ohm-cm cells as a function of temperature and intensity

    Science.gov (United States)

    Whitaker, A. F.; Little, S. A.; Smith, C. F., Jr.; Wooden, V. A.

    1979-01-01

    Three types of high performance silicon solar cells, BSF/BSR 10 ohm-cm, BSR 10 ohm-cm, and BSR 2 ohm-cm, were evaluated for their low temperature and low intensity performance. Sixteen cells of each type were subjected to ten temperatures and nine intensities. The BSF/BSR 10 ohm-cm cells provided the best performance at 1 solar constant and +25 C with an efficiency of 14.1% while the BSR 2 ohm-cm cells had the highest low temperature and low intensity performance with an efficiency of 22.2% at 0.04 solar constant and -170 C and the most consistent cell-to-cell characteristics.

  18. Radio frequency current-voltage probe for impedance and power measurements in multi-frequency unmatched loads

    Science.gov (United States)

    Lafleur, T.; Delattre, P. A.; Booth, J. P.; Johnson, E. V.; Dine, S.

    2013-01-01

    A broad-band, inline current-voltage probe, with a characteristic impedance of 50 Ω, is presented for the measurement of voltage and current waveforms, impedance, and power in rf systems. The probe, which uses capacitive and inductive sensors to determine the voltage and current, respectively, can be used for the measurement of single or multi-frequency signals into both matched and unmatched loads, over a frequency range of about 1-100 MHz. The probe calibration and impedance/power measurement technique are described in detail, and the calibrated probe results are compared with those obtained from a vector network analyzer and other commercial power meters. Use of the probe is demonstrated with the measurement of power into an unmatched capacitively coupled plasma excited by multi-frequency tailored voltage waveforms.

  19. Radio frequency current-voltage probe for impedance and power measurements in multi-frequency unmatched loads.

    Science.gov (United States)

    Lafleur, T; Delattre, P A; Booth, J P; Johnson, E V; Dine, S

    2013-01-01

    A broad-band, inline current-voltage probe, with a characteristic impedance of 50 Ω, is presented for the measurement of voltage and current waveforms, impedance, and power in rf systems. The probe, which uses capacitive and inductive sensors to determine the voltage and current, respectively, can be used for the measurement of single or multi-frequency signals into both matched and unmatched loads, over a frequency range of about 1-100 MHz. The probe calibration and impedance/power measurement technique are described in detail, and the calibrated probe results are compared with those obtained from a vector network analyzer and other commercial power meters. Use of the probe is demonstrated with the measurement of power into an unmatched capacitively coupled plasma excited by multi-frequency tailored voltage waveforms.

  20. The interface states and series resistance effects on the forward and reverse bias I-V, C-V and G/{omega}-V characteristics of Al-TiW-Pd{sub 2}Si/n-Si Schottky barrier diodes

    Energy Technology Data Exchange (ETDEWEB)

    Uslu, H.; Altindal, S.; Aydemir, U. [Department of Physics, Gazi University, 06500 Ankara (Turkey); Doekme, I., E-mail: ilbilgedokme@gazi.edu.t [Science Education Department, Gazi Education Faculty, Gazi University, 06500 Ankara (Turkey); Afandiyeva, I.M. [Baku State University, Baku (Azerbaijan)

    2010-07-30

    Illumination intensity effects on the electrical characteristics of Al-TiW-Pd{sub 2}Si/n-Si Schottky structures have been investigated in this study for the first time. The electrical parameters such as ideality factor (n), zero-bias-barrier height ({Phi}{sub B0}), series resistance (R{sub s}), depletion layer width (W{sub D}) and dopping concentration (N{sub D}) of Al-TiW-Pd{sub 2}Si/n-Si Schottky barrier diodes (SBDs) have been investigated by using the forward and reverse bias current-voltage (I-V), capacitance-voltage (C-V) and conductance-voltage (G/{omega}-V) measurements in dark and under illumination conditions at room temperature. The values of C and G/{omega} increase with increasing illumination intensity due to the illumination induced electron-hole pairs in the depletion region. The density of interface states (N{sub ss}) distribution profiles as a function of (E{sub c} - E{sub ss}) was extracted from the forward I-V measurements by taking into account the bias dependence of the effective barrier heights ({Phi}{sub e}) for device in dark and under various illumination intensities. The high values of N{sub ss} were responsible for the nonideal behavior of I-V, C-V and G/{omega} characteristics. The values of R{sub s} obtained from Cheung and Nicollian methods decrease with increasing illumination intensity. The high values of n and R{sub s} have been attributed to the particular distribution of N{sub ss}, surface preparation, inhomogeneity of interfacial layer and barrier height at metal/semiconductor (M/S) interface. As a result, the characteristics of SBD are affected not only in N{sub ss} but also in R{sub s}, and these two parameters strongly influence the electrical parameters.

  1. Observation and investigation of a dynamic inflection point in current-voltage curves for roll-to-roll processed polymer photovoltaics

    DEFF Research Database (Denmark)

    Medford, Andrew James; Lilliedal, Mathilde Raad

    2010-01-01

    Inflection point behaviour is often observed in the current-voltage (IV) curve of polymer and organic solar cells. This phenomenon is examined in the context of flexible roll-to-roll (R2R) processed polymer solar cells in a large series of devices with a layer structure of: PET-ITO-ZnO-P3HT...... that the findings are applicable to various other device structures based on semiconducting oxides. The findings may have influences on the possibilities and scale-up of polymer solar technologies.......:PCBM-PEDOT:PSS-Ag. The devices were manufactured using a combination of slot-die coating and screen printing; they were then encapsulated by lamination using a polymer based barrier material. All manufacturing steps were carried out in ambient air. The freshly prepared devices showed a consistent inflection point in the IV...

  2. Current-voltage curve of sodium channels and concentration dependence of sodium permeability in frog skin

    DEFF Research Database (Denmark)

    Fuchs, W; Larsen, Erik Hviid; Lindemann, B

    1977-01-01

    ) was clamped to zero and step-changes of Na activity in the outer solution ((Na)(o)) were performed with a fast-flow chamber at constant ionic strength, while the short-circuit current was recorded.3. At pre-selected times after a step-change of (Na)(o) the current response (I) to a fast voltage staircase...... was recorded. This procedure was repeated after blocking the Na channels with amiloride to obtain the current-voltage curve of transmembrane and paracellular shunt pathways. The current-voltage curve of the Na channels was computed by subtracting the shunt current from the total current.4. The instantaneous I...... transport through open Na-selective channels of the outward facing membrane of the stratum granulosum cells can be described as an electrodiffusion process which as such does not saturate with increasing (Na)(o). However, when added to the outer border of the membrane Na causes a decrease of P(Na) within...

  3. The current-voltage and noise properties of high temperature superconductor SNS and grain boundary junctions

    CERN Document Server

    McGordon, A

    1999-01-01

    transport that was dominated by the interlayer material, but supercurrent transport that could be due to pinhole shorts. In addition, both geometries, especially the sandwich junction, showed large amounts of normal state noise making these junctions unsuitable for device applications. The effect of shining laser light onto a junction was investigated. The effects on the I-V characteristic were unobservable with the experimental resolution available. The effect of the light on the critical current noise of the junction was to reduce the noise peak slightly when compared to the unilluminated case- the reduction was of the order of 10%, comparable with experimental resolution. The study of the noise from Josephson Junctions is an intense field of research. Despite this, no clear picture of the current transport in these devices has emerged. Without the detailed understanding of the mechanisms of current transport in High Temperature Superconductor junctions, the design of superconducting electronics will not mo...

  4. Overall system description and safety characteristics of Prototype Gen IV Sodium Cooled Fast Reactor in Korea

    Energy Technology Data Exchange (ETDEWEB)

    Yoo, Jae Woon; Chang, Jin Wook; Lim, Jae Yong; Cheon, Jin Sik; Lee, Tae Ho; Kim, Sung Kyun; Lee, Kwi Lim; Joo, Hyung Kook [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

    2016-10-15

    The Prototype Gen IV sodium cooled fast reactor (PGSFR) has been developed for the last 4 years, fulfilling the technology demonstration of the burning capability of transuranic elements included in light water reactor spent nuclear fuel. The PGSFR design has been focused on the robustness of safety systems by enhancing inherent safety characteristics of metal fuel and strengthening passive safety features using natural circulation and thermal expansion. The preliminary safety information document as a major outcome of the first design phase of PGSFR development was issued at the end of 2015. The project entered the second design phase at the beginning of 2016. This paper summarizes the overall structures, systems, and components of nuclear steam supply system and safety characteristics of the PGSFR. The research and development activities to demonstrate the safety performance are also briefly introduced in the paper.

  5. Inverse I-V Injection Characteristics of ZnO Nanoparticle-Based Diodes.

    Science.gov (United States)

    Mundt, Paul; Vogel, Stefan; Bonrad, Klaus; von Seggern, Heinz

    2016-08-10

    Simple Al/ZnO(NP)/Au diodes produced by spin coating of ZnO nanoparticle dispersions (ZnO(NP)) on Al/Al2O3 and Au substrates and subsequent Au deposition have been investigated to understand electron injection properties of more complex devices, incorporating ZnO(NP) as injection layer. Inverse I-V characteristics have been observed compared to conventional Al/ZnO(SP)/Au diodes produced by reactive ion sputtering of ZnO. SEM micrographs reveal that the void-containing contact of ZnO(NP) with the bottom Al electrode and the rough morphology of the top Au electrode are likely to be responsible for the observed injection and ejection probabilities of electrons. A simple tunneling model, incorporating the voids, explains the strongly reduced injection currents from Al whereas the top electrode fabricated by vapor deposition of Au onto the nanoparticle topology adopts the inverse ZnO(NP) morphology leading to enlarged injection areas combined with Au-tip landscapes. These tips in contrast to the smooth sputtered ZnO(SP) lead to electric field enhancement and strongly increased injection of electrons in reverse direction. The injected charge piles up at the barrier generated by voids between ZnO(NP) and the bottom electrode forcing a change in the barrier shape and therefore allowing for higher ejection rates. Both effects in combination explain the inverse I-V characteristic of nanoparticle based diodes.

  6. Monitoring and Fault Detection in Photovoltaic Systems Based On Inverter Measured String I-V Curves

    DEFF Research Database (Denmark)

    Spataru, Sergiu; Sera, Dezso; Kerekes, Tamas;

    2015-01-01

    Most photovoltaic (PV) string inverters have the hardware capability to measure at least part of the current-voltage (I-V) characteristic curve of the PV strings connected at the input. However, this intrinsic capability of the inverters is not used, since I-V curve measurement and monitoring......-of-system components through increased series resistance losses, or shunting of the PV modules. To achieve this, we propose and experimentally demonstrate three complementary PV system monitoring methods that make use of the I-V curve measurement capability of a commercial string inverter. The first method is suitable...... for monitoring single or independent PV strings, and is based on evaluating the ratio of certain operation points on the string I-V curve. The second method is applicable to PV systems with identical strings, and is based on monitoring and inter-comparison of string I-V curve parameters. For PV systems with non...

  7. CURRENT-VOLTAGE CURVES FOR TREATING EFFLUENT CONTAINING HEDP: DETERMINATION OF THE LIMITING CURRENT

    Directory of Open Access Journals (Sweden)

    T. Scarazzato

    2015-12-01

    Full Text Available Abstract Membrane separation techniques have been explored for treating industrial effluents to allow water reuse and component recovery. In an electrodialysis system, concentration polarization causes undesirable alterations in the ionic transportation mechanism. The graphic construction of the current voltage curve is proposed for establishing the value of the limiting current density applied to the cell. The aim of this work was to determine the limiting current density in an electrodialysis bench stack, the function of which was the treatment of an electroplating effluent containing HEDP. For this, a system with five compartments was used with a working solution simulating the rinse waters of HEDP-based baths. The results demonstrated correlation between the regions defined by theory and the experimental data.

  8. Current voltage analysis and band diagram of Ti/TiO{sub 2} nanotubes Schottky junction

    Energy Technology Data Exchange (ETDEWEB)

    Mini, P.A.; Sherine, Alex; Shalumon, K.T.; Balakrishnan, Avinash; Nair, S.V.; Subramanian, K.R.V. [Amrita Vishwa Vidyapeetham (University), Amrita Centre for Nanosciences and Molecular Medicine, Kochi (India)

    2012-08-15

    Here, we report on how the energy band diagram of a nanostructured semiconductor- metal interface aligns in accordance with semiconductor morphology. Electrochemically, titanium metal is anodized to form titanium dioxide nanotubes, which forms a junction with the free Ti substrate and this junction forms a natural Schottky barrier. With reduced dimensionality of the nanotube structures (lower wall thickness), we have observed band edge movements and band gap quantum confinement effects and lowering of the Schottky barrier. These results were corroborated with the help of cyclic voltammetry, ultraviolet-visible spectrometry, and impedance analysis. Current voltage analysis of the Schottky barrier showed a lowering of the barrier (by 25 %) with reducing dimensionality of the nanotube structures. At externally applied voltages higher than the Schottky barrier, charges can travel along the nanotubes and reside at an interface between the nanotubes and a high-{kappa} dielectric. This property was utilized to develop high surface area solid-state capacitors. (orig.)

  9. Current voltage analysis and band diagram of Ti/TiO2 nanotubes Schottky junction

    Science.gov (United States)

    Mini, P. A.; Sherine, Alex; Shalumon, K. T.; Balakrishnan, Avinash; Nair, S. V.; Subramanian, K. R. V.

    2012-08-01

    Here, we report on how the energy band diagram of a nanostructured semiconductor- metal interface aligns in accordance with semiconductor morphology. Electrochemically, titanium metal is anodized to form titanium dioxide nanotubes, which forms a junction with the free Ti substrate and this junction forms a natural Schottky barrier. With reduced dimensionality of the nanotube structures (lower wall thickness), we have observed band edge movements and band gap quantum confinement effects and lowering of the Schottky barrier. These results were corroborated with the help of cyclic voltammetry, ultraviolet-visible spectrometry, and impedance analysis. Current voltage analysis of the Schottky barrier showed a lowering of the barrier (by 25 %) with reducing dimensionality of the nanotube structures. At externally applied voltages higher than the Schottky barrier, charges can travel along the nanotubes and reside at an interface between the nanotubes and a high- κ dielectric. This property was utilized to develop high surface area solid-state capacitors.

  10. Temperature current-voltage characterisation of MOCVD grown InGaN/GaN MQW LEDs

    Energy Technology Data Exchange (ETDEWEB)

    Moldovan, Grigore; Humphreys, Colin J. [Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ (United Kingdom); Phillips, Andrew [phconsult Ltd., 54 Covent Garden, Cambridge, CB1 2HR (United Kingdom); Thrush, E.J. [Thomas Swan Scientific Equipment Limited, Buckingway Business Park, Cambridge, CB4 5UK (United Kingdom)

    2006-06-15

    A methodology of temperature current-voltage characterisation for blue GaN-based LED is described, with emphasis on artefacts arising from self-heating at high forward currents and voltage transients at low forward currents. Examples of LEDs with Al{sub 2}O{sub 3} and SiC substrates are discussed, with methods of accounting and avoiding these errors. For the devices studied here it is found that tunnelling dominates the charge transport and that two parallel conduction pathways are present. A method of interpretation of extracted data is also presented, in the context of desired device performance. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  11. Improved performance of a barrier-discharge plasma jet biased by a direct-current voltage

    Science.gov (United States)

    Li, Xuechen; Li, Yaru; Zhang, Panpan; Jia, Pengying; Dong, Lifang

    2016-01-01

    One of the challenges that plasma research encounters is how to generate a large-scale plasma plume at atmospheric pressure. Through utilizing a third electrode biased by a direct-current voltage, a longer plasma plume is generated by a plasma jet in dielectric barrier discharge configurations. Results indicate that the plume length increases until it reaches the third electrode with increasing the bias voltage. By fast photography, it is found that the plume consists of two types of streamers under the influence of the bias voltage, which develops from a guided streamer to a branching one with leaving the tube opening. The transition from the guided streamer to the branching one can be attributed to the electric field and the air/argon fraction. PMID:27759080

  12. Improved performance of a barrier-discharge plasma jet biased by a direct-current voltage

    Science.gov (United States)

    Li, Xuechen; Li, Yaru; Zhang, Panpan; Jia, Pengying; Dong, Lifang

    2016-10-01

    One of the challenges that plasma research encounters is how to generate a large-scale plasma plume at atmospheric pressure. Through utilizing a third electrode biased by a direct-current voltage, a longer plasma plume is generated by a plasma jet in dielectric barrier discharge configurations. Results indicate that the plume length increases until it reaches the third electrode with increasing the bias voltage. By fast photography, it is found that the plume consists of two types of streamers under the influence of the bias voltage, which develops from a guided streamer to a branching one with leaving the tube opening. The transition from the guided streamer to the branching one can be attributed to the electric field and the air/argon fraction.

  13. Ionic polarization-induced current-voltage hysteresis in CH3NH3PbX3 perovskite solar cells.

    Science.gov (United States)

    Meloni, Simone; Moehl, Thomas; Tress, Wolfgang; Franckevičius, Marius; Saliba, Michael; Lee, Yong Hui; Gao, Peng; Nazeeruddin, Mohammad Khaja; Zakeeruddin, Shaik Mohammed; Rothlisberger, Ursula; Graetzel, Michael

    2016-02-01

    CH3NH3PbX3 (MAPbX3) perovskites have attracted considerable attention as absorber materials for solar light harvesting, reaching solar to power conversion efficiencies above 20%. In spite of the rapid evolution of the efficiencies, the understanding of basic properties of these semiconductors is still ongoing. One phenomenon with so far unclear origin is the so-called hysteresis in the current-voltage characteristics of these solar cells. Here we investigate the origin of this phenomenon with a combined experimental and computational approach. Experimentally the activation energy for the hysteretic process is determined and compared with the computational results. First-principles simulations show that the timescale for MA(+) rotation excludes a MA-related ferroelectric effect as possible origin for the observed hysteresis. On the other hand, the computationally determined activation energies for halide ion (vacancy) migration are in excellent agreement with the experimentally determined values, suggesting that the migration of this species causes the observed hysteretic behaviour of these solar cells.

  14. The i-V curve characteristics of burner-stabilized premixed flames: detailed and reduced models

    KAUST Repository

    Han, Jie

    2016-07-17

    The i-V curve describes the current drawn from a flame as a function of the voltage difference applied across the reaction zone. Since combustion diagnostics and flame control strategies based on electric fields depend on the amount of current drawn from flames, there is significant interest in modeling and understanding i-V curves. We implement and apply a detailed model for the simulation of the production and transport of ions and electrons in one-dimensional premixed flames. An analytical reduced model is developed based on the detailed one, and analytical expressions are used to gain insight into the characteristics of the i-Vcurve for various flame configurations. In order for the reduced model to capture the spatial distribution of the electric field accurately, the concept of a dead zone region, where voltage is constant, is introduced, and a suitable closure for the spatial extent of the dead zone is proposed and validated. The results from the reduced modeling framework are found to be in good agreement with those from the detailed simulations. The saturation voltage is found to depend significantly on the flame location relative to the electrodes, and on the sign of the voltage difference applied. Furthermore, at sub-saturation conditions, the current is shown to increase linearly or quadratically with the applied voltage, depending on the flame location. These limiting behaviors exhibited by the reduced model elucidate the features of i-V curves observed experimentally. The reduced model relies on the existence of a thin layer where charges are produced, corresponding to the reaction zone of a flame. Consequently, the analytical model we propose is not limited to the study of premixed flames, and may be applied easily to others configurations, e.g.~nonpremixed counterflow flames.

  15. Behavioral characteristics of DSM-IV ADHD subtypes in a school-based population.

    Science.gov (United States)

    Gaub, M; Carlson, C L

    1997-04-01

    From an ethnically diverse sample of 2,744 school children, 221 attention deficit hyperactivity disorder (ADHD) [123 (4.5%) predominantly inattentive (IA), 47 (1.7%) predominantly hyperactive/impulsive (HI), and 51 (19%) combined type (C)] were identified using teacher ratings on a Diagnostic and Statistical Manual of Mental Disorders (4th ed.)(DSM-IV) symptom checklist. Subjects were compared to 221 controls on teacher ratings of behavioral, academic, and social functioning. The results revealed relatively independent areas of impairment for each diagnostic group. The IA children were impaired in all areas, but were rated as displaying more appropriate behavior and fewer externalizing problems than HI or C children. The HI group displayed externalizing and social problems, but was rated as no different than controls in learning or internalizing problems. The C group demonstrated severe and pervasive difficulties across domains. These findings support the validity of the DSM-IV ADHD subtypes; all ADHD groups demonstrated impairment relative to controls, but show different patterns of behavioral characteristics.

  16. The effect of gradually constricted channel on the I-V characteristics of graphene sheets

    Science.gov (United States)

    Zanella, Fernando; Nobrega, K. Z.; Dartora, C. A.

    2016-10-01

    Ideal graphene is a gapless semiconductor consisting of a single layer of carbon atoms regularly arranged in a honeycomb lattice having infinite spatial extent in the (x,y)-plane, in which electrons behave as Dirac massless fermions. Even neglecting interactions with the anchoring substrate, a graphene sheet in real world has finite extent, leading to distinctive features in the conductivity of a given sample. In this letter we study the effect of a gradual channel constriction in graphene nanoribbons on their I-V characteristics, using non-equilibrium Green's function formalism. The constriction width and the border cutting angle are the main parameters to be varied. We found that transmission through the channel is considerably affected by these parameters, presenting sharp peaks at specific energies, which can be attributed to a resonance due to the tuning of energy eigenvalues.

  17. A method for the determination of the standard deviations of the solar cell I-V characteristic parameters

    Energy Technology Data Exchange (ETDEWEB)

    Veissid, N. (Instituto de Pesquisas Espaciais, Sao Jose dos Campos (Brazil)); Cruz, M.T.F. da (Universidade de Sao Paulo, SP (Brazil). Inst. de Fisica); Andrade, A.M. de (Universidade de Sao Paulo, SP (Brazil). Lab. de Microeletronica)

    1990-05-01

    A method for the determination of the standard deviations of the solar cell characteristic curve fitting parameters is presented for the first time. In this method, a Taylor series expansion of the parameters, around their best values, is made resulting in linear functions which permit the determination of the standard deviations with the least-squares method. The parameters, with the respective standard deviations, were determined from the experimental I-V characteristic curves obtained under illuminated and dark conditions. For the studied experimental I-V curves, the diode saturation currents, the diode factor and the shunt resistance showed smaller standard deviations in the dark condition, and the series resistance appeared to be more precise in the illuminated I-V characteristic. (orig.).

  18. Statistically Modeling I-V Characteristics of CNT-FET with LASSO

    Science.gov (United States)

    Ma, Dongsheng; Ye, Zuochang; Wang, Yan

    2017-08-01

    With the advent of internet of things (IOT), the need for studying new material and devices for various applications is increasing. Traditionally we build compact models for transistors on the basis of physics. But physical models are expensive and need a very long time to adjust for non-ideal effects. As the vision for the application of many novel devices is not certain or the manufacture process is not mature, deriving generalized accurate physical models for such devices is very strenuous, whereas statistical modeling is becoming a potential method because of its data oriented property and fast implementation. In this paper, one classical statistical regression method, LASSO, is used to model the I-V characteristics of CNT-FET and a pseudo-PMOS inverter simulation based on the trained model is implemented in Cadence. The normalized relative mean square prediction error of the trained model versus experiment sample data and the simulation results show that the model is acceptable for digital circuit static simulation. And such modeling methodology can extend to general devices.

  19. Interpretation of current-voltage relationships for "active" ion transport systems: I. Steady-state reaction-kinetic analysis of class-I mechanisms.

    Science.gov (United States)

    Hansen, U P; Gradmann, D; Sanders, D; Slayman, C L

    1981-01-01

    This paper develops a simple reaction-kinetic model to describe electrogenic pumping and co- (or counter-) transport of ions. It uses the standard steady-state approach for cyclic enzyme- or carrier-mediated transport, but does not assume rate-limitation by any particular reaction step. Voltage-dependence is introduced, after the suggestion of Läuger and Stark (Biochim. Biophys. Acta 211:458-466, 1970), via a symmetric Eyring barrier, in which the charge-transit reaction constants are written as k12 = ko12 exp(zF delta psi/2RT) and k21 = ko21 exp(-zF delta psi/2RT). For interpretation of current-voltage relationships, all voltage-independent reaction steps are lumped together, so the model in its simplest form can be described as a pseudo-2-state model. It is characterized by the two voltage-dependent reaction constants, two lumped voltage-independent reaction constants (k12, k21), and two reserve factors (ri, ro) which formally take account of carrier states that are indistinguishable in the current-voltage (I-V) analysis. The model generates a wide range of I-V relationships, depending on the relative magnitudes of the four reaction constants, sufficient to describe essentially all I-V datas now available on "active" ion-transport systems. Algebraic and numerical analysis of the reserve factors, by means of expanded pseudo-3-, 4-, and 5-state models, shows them to be bounded and not large for most combinations of reaction constants in the lumped pathway. The most important exception to this rule occurs when carrier decharging immediately follows charge transit of the membrane and is very fast relative to other constituent voltage-independent reactions. Such a circumstance generates kinetic equivalence of chemical and electrical gradients, thus providing a consistent definition of ion-motive forces (e.g., proton-motive force, PMF). With appropriate restrictions, it also yields both linear and log-linear relationships between net transport velocity and either

  20. Transient analysis of a PV power generator charging a capacitor for measurement of the I-V characteristics

    Energy Technology Data Exchange (ETDEWEB)

    Mahmoud, Marwan M. [Energy Research Centre, An Najah National University, P.O. Box 721 Nablus (PS)

    2006-10-15

    Measuring the I-V characteristics is of high importance since it can be considered as a quality and performance certificate for each PV generator. The most precise and inexpensive measuring method is represented in capacitor charging by the PV generator. Using the equivalent circuit of the PV generator with a capacitor as load and applying transient analysis on the circuit, we obtain the capacitor charging voltage and current as a function of time, as well as their differentials as a function of short circuit current and capacitor size. The derived equations facilitate the calculation of proper capacitance size for measuring the I-V characteristics, and considers the acquisition speed of the measuring system as demonstrated through two measurement samples in this paper. The capacitor size is directly and indirectly proportional to the short circuit current and open circuit voltage of the PV generator, respectively. Accordingly, the paper presents a capacitance calculation chart, which enables selecting the correct capacitance for measuring the I-V characteristics by a computerized data acquisition system. (author)

  1. Impact of exchange-correlation effects on the IV characteristics of a molecular junction

    DEFF Research Database (Denmark)

    Thygesen, Kristian Sommer

    2008-01-01

    The role of exchange-correlation effects in nonequilibrium quantum transport through molecular junctions is assessed by analyzing the IV curve of a generic two-level model using self-consistent many-body perturbation theory (second Born and GW approximations) on the Keldysh contour...

  2. Effects of SILAR cycle on the electrical characteristics of Cd/CdSe/n-Si/Au-Sb structure

    OpenAIRE

    2011-01-01

    Cd/CdSe/n-Si/Au-Sb structures have been fabricated by Successive Ionic Layer Adsorption and Reaction (SILAR) method under various SILAR cycles. The characteristics parameters of these structures such as barrier height, ideality factor, series resistance are calculated from the current-voltage (I-V) measurements and the barrier height, carrier concentration are calculated from reverse bias capacitance-voltage (C-V) measurements at 300 kHz frequency and room temperature. Furthermore, t...

  3. Effects of type IV collagen on myogenic characteristics of IGF-I gene-engineered myoblasts.

    Science.gov (United States)

    Ito, Akira; Yamamoto, Masahiro; Ikeda, Kazushi; Sato, Masanori; Kawabe, Yoshinori; Kamihira, Masamichi

    2015-05-01

    Skeletal muscle regeneration requires migration, proliferation and fusion of myoblasts to form multinucleated myotubes. In our previous study, we showed that insulin-like growth factor (IGF)-I gene delivery stimulates the proliferation and differentiation of mouse myoblast C2C12 cells and promotes the contractile force generated by tissue-engineered skeletal muscles. The aim of this study was to investigate the effects of the extracellular matrix on IGF-I gene-engineered C2C12 cells in vitro. Retroviral vectors for doxycycline (Dox)-inducible expression of the IGF-I gene were transduced into C2C12 cells. When cultured on a type IV collagen-coated surface, we observed significant increases in the migration speed and number of IGF-I gene-engineered C2C12 cells with Dox addition, designated as C2C12/IGF (+) cells. Co-culture of C2C12/IGF (+) cells and parental C2C12 cells, which had been cultured in differentiation medium for 3 days, greatly enhanced myotube formation. Moreover, type IV collagen supplementation promoted the fusion of C2C12/IGF (+) cells with differentiated C2C12 cells and increased the number of myotubes with striations. Myotubes formed by C2C12/IGF (+) cells cultured on type IV collagen showed a dynamic contractile activity in response to electrical pulse stimulation. These findings indicate that type IV collagen promotes skeletal muscle regeneration mediated by IGF-I-expressing myoblasts, which may have important clinical implications in the design of myoblast-based therapies.

  4. Effect of illumination intensity and temperature on the I-V characteristics of n-C/p-Si heterojunction

    Energy Technology Data Exchange (ETDEWEB)

    Gupta, Babita; Shishodia, P.K.; Kapoor, A.; Mehra, R.M. [Department of Electronic Science, University of Delhi South Campus, Benito Juarez Road, 110021 New Delhi (India); Soga, Tetsuo; Jimbo, Takashi [Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology, 466-8555 Nagoya (Japan); Umeno, Masayoshi [Research Center for Microstructure Devices, Nagoya Institute of Technology, 466-8555 Nagoya (Japan)

    2002-07-01

    Krishna et al. (Sol. Energy Mater. Sol. Cells 65 (2001) 163) have recently developed an heterojunction n-C/p-Si in order to achieve low cost and high-efficiency carbon solar cell. It has been shown that for this structure, the maximum quantum efficiency (25%) appears at wavelength {lambda} (600nm). In this paper, the dependence of I-V characteristics of this heterojunction solar cell on illumination intensity and temperature has been systematically investigated. An estimation of the stability of the solar cell with temperature has been made in terms of the temperature coefficient of I{sub sc} and V{sub oc}. The intensity variation study has been used to estimate the series resistance R{sub s} of the solar cell. The effect of illumination intensity on I-V of n-C/p-Si heterojunction is more complex because the carrier lifetime and the carrier mobility of amorphous carbon are small and also because drift of carriers by built-in electric field plays an important role in these cells. Therefore, the conventional analytical expression for I-V characteristic is not applicable to such solar cells. These structures will not obey the principle of superposition of illuminated and dark current. The experimental results have been analysed by developing empirical relation for I-V.The temperature sensitivity parameters {alpha}, the change in I{sub sc} and {beta}, the change in V{sub oc} per degree centigrade have been computed and are found to be 0.087mA/C and 1mV/C, respectively. This suggests that the heterojunction n-C/p-Si has good temperature tolerance. The value of series resistance has been estimated from the family of I-V curves at various intensities. The R{sub s} is found to be {approx}12{omega}, which is on the higher side from the point of view of photovoltaic application.

  5. Theoretical method for estimation of power loss due to mismatch in solar cell I-V characteristics

    Energy Technology Data Exchange (ETDEWEB)

    Srinivasamurthy, N.; Malathi, B.; Mathur, R.S.

    1978-01-01

    In order to generate power from the solar panels at a required voltage, suitable number of cells should be connected in series and parallel. There exists a mismatch in the solar cell I-V characteristics, when they are produced in a lot. When such cells are connected in a series parallel array, power loss would occur due to the mismatch. A theoretical approach is made to compute the power loss. This would suggest the designer to select proper combination of cells for minimum power loss of any configuration of the solar panel.

  6. The i-V curve curve characteristics of burner-stabilized premixed flames: detailed and reduced models

    CERN Document Server

    Han, Jie; Casey, Tiernan A; Bisetti, Fabrizio; Im, Hong G; Chen, Jyh-Yuan

    2016-01-01

    The i-V curve describes the current drawn from a flame as a function of the voltage difference applied across the reaction zone. Since combustion diagnostics and flame control strategies based on electric fields depend on the amount of current drawn from flames, there is significant interest in modeling and understanding i-V curves. We implement and apply a detailed model for the simulation of the production and transport of ions and electrons in one dimensional premixed flames. An analytical reduced model is developed based on the detailed one, and analytical expressions are used to gain insight into the characteristics of the i-V curve for various flame configurations. In order for the reduced model to capture the spatial distribution of the electric field accurately, the concept of a dead zone region, where voltage is constant, is introduced, and a suitable closure for the spatial extent of the dead zone is proposed and validated. The results from the reduced modeling framework are found to be in good agre...

  7. Charging of superconducting layers and resonance-related hysteresis in the current-voltage characteristics of coupled Josephson junctions

    Science.gov (United States)

    Shukrinov, Yu. M.; Gaafar, M. A.

    2011-09-01

    A manifestation of a resonance-type hysteresis related to the parametric resonance in the system of coupled Josephson junctions is demonstrated. In contrast with the McCumber and Steward hysteresis, we find that the width of this hysteresis is inversely proportional to the McCumber parameter and it also depends on the coupling between junctions and the boundary conditions. Investigation of the time dependence of the electric charge in superconducting layers allows us to explain the origin of this hysteresis by different charge dynamics for increasing and decreasing bias current processes. The effect of the wavelength of the longitudinal plasma wave created at the resonance on the charging of superconducting layers is demonstrated. We find a strong effect of the dissipation in the system on the amplitude of the charge oscillations at the resonance.

  8. Adsorption behavior and current-voltage characteristics of CdSe nanocrystals on hydrogen-passivated silicon

    DEFF Research Database (Denmark)

    Walzer, Karsten; Quaade, Ulrich; Ginger, D.S.

    2002-01-01

    Using scanning tunneling microscopy and spectroscopy we have studied both the geometric distribution and the conduction properties of organic shell capped CdSe nanocrystals adsorbed on hydrogen-passivated Si(100). At submonolayer concentrations, the nanocrystal distribution on the surface was found...... found that the current through the MIS junction is limited by the nanocrystals only in one bias direction, while in the other bias direction the current is limited by the semiconducting substrate. This property may be of relevance for the construction of hybrid electronic devices combining semiconductor...... a widening of the surface band gap by 1 eV with respect to the gap of the substrate, while a significant narrowing of the gap was observed for nanocrystals on p-Si:H. This experimental result could be explained by modeling the system as a metal-insulator-semiconductor (MIS) diode. Using this model we have...

  9. Influence of surface losses and the self-pumping effect on current-voltage characteristics of a long Josephson junction

    DEFF Research Database (Denmark)

    Pankratov, A.L.; Sobolev, A.S.; Koshelets, V.P.

    2007-01-01

    )] in the millimeter and submillimeter range. The study is performed in the frame of a modified sine-Gordon model, which includes surface losses, self-pumping effect, and in an empirical way the superconducting gap. The electromagnetic coupling to the environment is modeled by a simple resistor-capacitor load (RC load...

  10. Reply to "Comment on 'Electrical Conductivity and Current-Voltage Characteristics of Individual Conducting Polymer PEDOT Nanowires'"

    Institute of Scientific and Technical Information of China (English)

    LONG Yun-Ze

    2009-01-01

    @@ Recently we reported electrical properties of an individual PEDOT nanowire.[1] Ohlckers and Pipinys[2]suggested that the temperature-behavior of Ⅰ- Ⅴcurves and resistance can be described in the framework of a phonon-assisted tunneling (PhAT) model.

  11. Experimental Study of the Course of Threshold Current, Voltage and Electrode Impedance During Stepwise Stimulation From the Skin Surface to the Human Cortex

    NARCIS (Netherlands)

    Szelenyi, Andrea; Journee, Henricus Louis; Herrlich, Simon; Galistu, Gianni M.; van den Berg, Joris; van Dijk, J. Marc C.

    Background: Transcranial electric stimulation as used during intraoperative neurostimulation is dependent on electrode and skull impedances. Objective: Threshold currents, voltages and electrode impedances were evaluated with electrical stimulation at 8 successive layers between the skin and the

  12. Experimental Study of the Course of Threshold Current, Voltage and Electrode Impedance During Stepwise Stimulation From the Skin Surface to the Human Cortex

    NARCIS (Netherlands)

    Szelenyi, Andrea; Journee, Henricus Louis; Herrlich, Simon; Galistu, Gianni M.; van den Berg, Joris; van Dijk, J. Marc C.

    2013-01-01

    Background: Transcranial electric stimulation as used during intraoperative neurostimulation is dependent on electrode and skull impedances. Objective: Threshold currents, voltages and electrode impedances were evaluated with electrical stimulation at 8 successive layers between the skin and the cer

  13. The influences of the properties of impurities and defects on the dark I-V characteristic curve and output parameters of c-Si solar cells

    Science.gov (United States)

    Lu, Xiaodong; Song, Yang; Gao, Jie; Wang, Xinxin; Zhang, Yufeng

    2017-09-01

    The influences of the coating ratio of electrode, doping concentration of substrate and type of impurities and defects on the dark I-V characteristic curves and output parameters of c-Si solar cells are studied by finite difference method and the dark I-V characteristic curves under different conditions are analyzed by their ideal factors, the results show that: the dark current values under the same bias voltage will increase with the increasing of the coating ratio of electrode or doping concentration of substrate; the influences of donor-like, acceptor-like and recombination-center-like impurities and defects on the dark I-V characteristic curves have threshold effects; the parameters of the impurities and defects smaller than their corresponding threshold will have no obvious influences on dark I-V characteristic curves; the acceptor-like impurities and defects on the surface of c-Si solar cells have no influences on their dark I-V characteristic curve, but the donor-like and recombination-center-like impurities and defects have strong influences on their dark I-V characteristic curve; the variations of the output parameters of c-Si solar cells are analyzed in detail under the different properties of the impurities and defects inside and on the surfaces of c-Si solar cells.

  14. Review of curve-fitting error criteria for solar-cell I-V characteristics

    Energy Technology Data Exchange (ETDEWEB)

    Phang, J.C.H.; Chan, D.S.H.

    1986-07-01

    Various methods for recovering solar cell lumped-circuit model parameters from experimental characteristics are briefly reviewed. The advantages of extracting parameters from illuminated characteristics are highlighted. These include the availability of accurate analytical expressions developed recently. A commonly used method of parameter recovery by curve fitting minimises sigma which is defined as the r.m.s. of the relative current errors between the experimental and theoretical characteristics. This method is demonstrated to be unreliable when used with characteristics collected by linear analogue to digital systems, or which have certain data-point distributions. A more-reliable minimisation criterion epsilon is proposed. epsilon is based on the area difference between the experimental and theoretical characteristics. Computation experiments show that the use of epsilon results in much more accurate parameter recovery for both dark and illuminated characteristics, and that its accuracy is almost independent of data-point distribution. epsilon also provides a good basis for comparing the quality of fit of theoretical models to experimental characteristics.

  15. [Characteristics and Outcomes of Treatment in Patients with Stage IV Colorectal Cancer with Mismatch Repair Deficiency].

    Science.gov (United States)

    Ishibashi, Keiichiro; Chika, Noriyasu; Suzuki, Okihide; Ito, Tetsuya; Amano, Kunihiko; Kumamoto, Kensuke; Fukuchi, Minoru; Kumagai, Youichi; Mochiki, Erito; Ishida, Hideyuki

    2016-11-01

    Mismatch repair(MMR)protein deficiency in colorectal cancer is well correlated with high-level microsatellite instability (MSI-H). There are little data on mismatch repair deficiency(dMMR)colorectal cancers in Japan. In addition, we have no available data on the therapeutic efficacy of oxaliplatin(oxa)-based chemotherapy, one of the standard treatment regimens for metastatic colorectal cancer, for patients with dMMR colorectal cancer. The subjects were 254 patients with Stage IV colorectal cancer whose tumors were immunohistochemically stained for MMR proteins, MLH1, MSH2, MSH6, and PMS2. Patients who underwent R0 resection were excluded. Clinicopathologic factors and the efficacy of oxa-based chemotherapy were compared between patients with dMMR colorectal cancer and those with mismatch repair proficient(pMMR)colorectal cancer. There were 7(2.8%)patients with dMMR. Four patients demonstrated both MLH1 and PMS2 loss, while 3 patients demonstrated both MSH2 and MSH6 loss. Though the dMMR had a higher frequency in female patients(p=0.02) and a lower frequency in those with liver metastasis(pcolorectal cancers was lower than those(4-11%)reported in Western countries. Therefore, the clinical significance of universal screeningfor dMMR in all colorectal cancer samples may not be valid. Concerningsurvival benefit, oxa-based chemotherapy seems to be an effective alternative in clinical practice for metastatic colorectal cancer patients with dMMR.

  16. A new switching characteristics of highly doped multi-quantum well

    CERN Document Server

    Song, C K

    1999-01-01

    A new type of hysteretic current-voltage characteristics, which switched from a low conductance off-state into a high conductance on-state at a threshold voltage and the high conductance state was sustained even when the bias voltage reduced below the threshold voltage, was experimentally observed for the highly doped multi-quantum well structure. The characteristics were attributed to confinement of electrons and impact ionization of the confined electrons out of the quantum wells. The test devices employing 10 periods of quantum wells were fabricated by using AlGaAs/GaAs semiconductor heterostructure and I-V characteristics were examined.

  17. Characteristics of ADHD among Omani Schoolchildren Using "DSM-IV": Descriptive Study

    Science.gov (United States)

    Al-Sharbati, Marwan M.; Zaidan, Ziad A. J.; Dorvlo, Atsu S. S.; Al-Adawi, Samir

    2011-01-01

    Background: There is a dearth of studies describing the characteristics of ADHD among schoolchildren attending child psychiatry clinics in the Arab world. Most of the previous quests have focused on community surveys or themes that hampered international comparison. Aim: This study screened for the presence of ADHD as well as investigates the…

  18. Charge carrier transport in Cu(In,Ga)Se{sub 2} thin-film solar-cells studied by electron beam induced current and temperature and illumination dependent current voltage analysis

    Energy Technology Data Exchange (ETDEWEB)

    Nichterwitz, Melanie

    2012-01-10

    This work contributes to the understanding of generation dependent charge-carrier transport properties in Cu(In,Ga)Se{sub 2} (CIGSe)/ CdS/ ZnO solar cells and a consistent model for the electronic band diagram of the heterojunction region of the device is developed. Cross section electron-beam induced current (EBIC) and temperature and illumination dependent current voltage (IV) measurements are performed on CIGSe solar cells with varying absorber layer compositions and CdS thickness. For a better understanding of possibilities and limitations of EBIC measurements applied on CIGSe solar cells, detailed numerical simulations of cross section EBIC profiles for varying electron beam and solar cell parameters are performed and compared to profiles obtained from an analytical description. Especially the effects of high injection conditions are considered. Even though the collection function of the solar cell is not independent of the generation function of the electron beam, the local electron diffusion length in CIGSe can still be extracted. Grain specific values ranging from (480±70) nm to (2.3±0.2) μm are determined for a CuInSe{sub 2} absorber layer and a value of (2.8±0.3) μm for CIGSe with a Ga-content of 0.3. There are several models discussed in literature to explain generation dependent charge carrier transport, all assuming a high acceptor density either located in the CIGSe layer close to the CIGSe/CdS interface (p{sup +} layer), within the CdS layer or at the CdS/ZnO interface. In all models, a change in charge carrier collection properties is caused by a generation dependent occupation probability of the acceptor type defect state and the resulting potential distribution throughout the device. Numerical simulations of EBIC and IV data are performed with parameters according to these models. The model that explains the experimental data best is that of a p{sup +} layer at the CIGSe/CdS interface and acceptor type defect states at the CdS/ZnO interface

  19. Effect of π Orbital on I/V Characteristics and Transmission in Molecular Diode Structures with Au Contacts

    Directory of Open Access Journals (Sweden)

    A. Mallaiah

    2017-02-01

    Full Text Available The electronic transport properties of electrons in a molecules are observed by using Non equilibrium Green’s function(NEGF. We present a extremely through and careful computational approach well ordered method to do a framework analysis of donor (CH3 and acceptor (CN molecules connected between the Au(111 contacts, and also observed current progress through molecular devices depends on number of bonds or not. Such observations implementation through not possible by standard quantum chemistry soft wares. The results shows I-V characteristics, Transport spectrum and Transport analysis can effectively tune the molecules works like a conventional semi-conductor based diodes, these results invoke to design the logic gates and logic circuits.

  20. Anomalous forward I-V characteristics of Ti/Au SiC Schottky barrier diodes

    Energy Technology Data Exchange (ETDEWEB)

    Morrison, D.J.; Wright, N.G.; Johnson, C.M.; O' Neill, A.G. [Newcastle upon Tyne Univ. (UK). Dept. of Electr. and Electron. Eng.; Hilton, K.P.; Uren, M.J. [Defence Evaluation Research Agency, Malvern, Worcestershire (United Kingdom)

    1999-07-30

    The aim of this study was to improve the adhesion of Au Schottky contacts to SiC. In order to do this, before the deposition of the Au layer, a thin layer of Ti was deposited. However, this resulted in an anomalous step in the forward bias electrical characteristic for some diodes. An equivalent circuit model is introduced to explain this irregularity in terms of two barrier heights. PSPICE is used to simulate this model. Simulated and experimental data are in good agreement over the temperature range 25 to 250 C. (orig.)

  1. Measurement of Solar Cell Parameters with Dark Forward I-V Characteristics

    Directory of Open Access Journals (Sweden)

    J. Salinger

    2006-01-01

    Full Text Available The grade of a solar cell depends mainly on the quality of the starting material. During the production of this material, many impurities are left in the bulk material and form defect levels in the band-gap, which act as generation-recombination centers or charge carrier traps. These levels influence the efficiency of solar cells. Therefore knowledge of the parameters of these levels, e.g., energy position, capture cross section and concentration, is very useful for solar cell engineering. In this paper emphasis is placed on a simple and fast method for obtaining these parameters, namely measurements of dark characteristics. Preliminary results are introduced, together with the difficulties and limits of this method. 

  2. A New Strategy for Accurately Predicting I-V Electrical Characteristics of PV Modules Using a Nonlinear Five-Point Model

    Directory of Open Access Journals (Sweden)

    Sakaros Bogning Dongue

    2013-01-01

    Full Text Available This paper presents the modelling of electrical I-V response of illuminated photovoltaic crystalline modules. As an alternative method to the linear five-parameter model, our strategy uses advantages of a nonlinear analytical five-point model to take into account the effects of nonlinear variations of current with respect to solar irradiance and of voltage with respect to cells temperature. We succeeded in this work to predict with great accuracy the I-V characteristics of monocrystalline shell SP75 and polycrystalline GESOLAR GE-P70 photovoltaic modules. The good comparison of our calculated results to experimental data provided by the modules manufacturers makes it possible to appreciate the contribution of taking into account the nonlinear effect of operating conditions data on I-V characteristics of photovoltaic modules.

  3. A novel method for measuring carrier lifetime and capture cross-section by using the negative resistance I-V characteristics of a barrier-type thyristor

    Energy Technology Data Exchange (ETDEWEB)

    Li Hairong; Li Siyuan, E-mail: hrli@lzu.edu.c [Institute of Microelectronics, Lanzhou University, Lanzhou 730000 (China)

    2010-08-15

    A brand new and feasible method for measuring the carrier lifetime and capture cross-section of a barrier by using the negative resistance segment of the I-V characteristics of a barrier-type thyristor (BTH) is put forward. The measuring principle and calculation method are given. The BTH samples are experimentally measured and the results are analyzed in detail. (semiconductor devices)

  4. The effect of used deformation, metal sheath and heat treatment on the I-V curve of ex situ MgB 2 composite

    Science.gov (United States)

    Kováč, P.; Hušek, I.; Melišek, T.

    2004-01-01

    Current-voltage characteristics of MgB 2 composite wires made of ex situ process using Cu, Fe and stainless steel (SS) sheaths have been measured at 4.2 K in the self-field and external magnetic field between 2 and 4 T. It was found that the used mode of deformation (drawing, rotary swaging and two-axial rolling) influences the slope of I-V curve due to affected grain connectivity. Final heat treatment at 950 °C/0.5 h improves grain connectivity apparently, which results in I-V characteristic with very high n-exponents. The n-exponents of multi-core wires measured in external field are apparently lower due to a current sharing among the non-uniform filaments surrounded by high resistance matrix.

  5. Rome III vs Rome IV criteria for irritable bowel syndrome: A comparison of clinical characteristics in a large cohort study.

    Science.gov (United States)

    Vork, L; Weerts, Z Z R M; Mujagic, Z; Kruimel, J W; Hesselink, M A M; Muris, J W M; Keszthelyi, D; Jonkers, D M A E; Masclee, A A M

    2017-08-14

    The Rome criteria for irritable bowel syndrome (IBS) have been revised and are expected to apply only to the subset of Rome III IBS subjects with abdominal pain as predominant symptom, occurring at least once a week. The aim of this study was to determine the percentage of Rome III IBS subjects that fulfills Rome IV criteria and to evaluate differences between Rome IV-positive and Rome IV-negative subjects. Four hundred and four Rome III IBS subjects completed a 14-day end-of-day symptom diary, the Gastrointestinal Symptom Rating Scale (GSRS), Hospital Anxiety and Depression Scale, and RAND 36-item Short-Form Health Survey (SF-36). Diary-based surrogate Rome IV criteria were defined as occurrence of abdominal pain at least 1 day each week with a severity of ≥2 (mild; definition 1) or ≥3 (considerable; definition 2). Using surrogate Rome IV criteria, 353 (87.4%, definition 1) and 249 (61.6%, definition 2) subjects were defined as Rome IV positive. These patients were more often female, younger, and recruited from secondary/tertiary care compared with Rome IV-negative subjects. They also presented with higher abdominal pain scores and gastrointestinal (GI) symptom severity on both end-of-day diary and GSRS, higher psychological symptom scores, and lower quality of life compared with Rome IV-negative subjects. The Rome IV IBS population likely reflects a subgroup of Rome III IBS patients with more severe GI symptomatology, psychological comorbidities, and lower quality of life. This implies that results from Rome III IBS studies may not be directly comparable to those from Rome IV IBS populations. © 2017 John Wiley & Sons Ltd.

  6. Depth-resolved ultra-violet spectroscopic photo current-voltage measurements for the analysis of AlGaN/GaN high electron mobility transistor epilayer deposited on Si

    Energy Technology Data Exchange (ETDEWEB)

    Ozden, Burcu; Yang, Chungman; Tong, Fei; Khanal, Min P.; Mirkhani, Vahid; Sk, Mobbassar Hassan; Ahyi, Ayayi Claude; Park, Minseo, E-mail: park@physics.auburn.edu [Department of Physics, Auburn University, Auburn, Alabama 36849 (United States)

    2014-10-27

    We have demonstrated that the depth-dependent defect distribution of the deep level traps in the AlGaN/GaN high electron mobility transistor (HEMT) epi-structures can be analyzed by using the depth-resolved ultra-violet (UV) spectroscopic photo current-voltage (IV) (DR-UV-SPIV). It is of great importance to analyze deep level defects in the AlGaN/GaN HEMT structure, since it is recognized that deep level defects are the main source for causing current collapse phenomena leading to reduced device reliability. The AlGaN/GaN HEMT epi-layers were grown on a 6 in. Si wafer by metal-organic chemical vapor deposition. The DR-UV-SPIV measurement was performed using a monochromatized UV light illumination from a Xe lamp. The key strength of the DR-UV-SPIV is its ability to provide information on the depth-dependent electrically active defect distribution along the epi-layer growth direction. The DR-UV-SPIV data showed variations in the depth-dependent defect distribution across the wafer. As a result, rapid feedback on the depth-dependent electrical homogeneity of the electrically active defect distribution in the AlGaN/GaN HEMT epi-structure grown on a Si wafer with minimal sample preparation can be elucidated from the DR-UV-SPIV in combination with our previously demonstrated spectroscopic photo-IV measurement with the sub-bandgap excitation.

  7. High temperature behavior of multi-region direct current current-voltage spectroscopy and relationship with shallow-trench-isolation-based high-voltage laterally diffused metal-oxide-semiconductor field-effect-transistors reliability

    Science.gov (United States)

    He, Yandong; Zhang, Ganggang; Zhang, Xing

    2014-01-01

    With the process compatibility with the mainstream standard complementary metal-oxide-semiconductor (CMOS), shallow trench isolation (STI) based laterally diffused metal-oxide-semiconductor (LDMOS) devices have become popular for its better tradeoff between breakdown voltage and performance, especially for smart power applications. A multi-region direct current current-voltage (MR-DCIV) technique with spectroscopic features was demonstrated to map the interface state generation in the channel, accumulation and STI drift regions. High temperature behavior of MR-DCIV spectroscopy was analyzed and a physical model was verified. Degradation of STI-based LDMOS transistors under high temperature reverse bias (HTRB) stress is experimentally studied by MR-DCIV spectroscopy. The impact of interface state location on device electrical characteristics was investigated. Our results show that the major contribution to HTRB degradation, in term of the on-resistance degradation, was attributed to interface state generation under STI drift region.

  8. pH-Sensing Characteristics of Hydrothermal Al-Doped ZnO Nanostructures

    OpenAIRE

    Jyh-Liang Wang; Po-Yu Yang; Tsang-Yen Hsieh; Chuan-Chou Hwang; Miin-Horng Juang

    2013-01-01

    Highly sensitive and stable pH-sensing properties of an extended-gate field-effect transistor (EGFET) based on the aluminum-doped ZnO (AZO) nanostructures have been demonstrated. The AZO nanostructures with different Al concentrations were synthesized on AZO/glass substrate via a simple hydrothermal growth method at 85°C. The AZO sensing nanostructures were connected with the metal-oxide-semiconductor field-effect transistor (MOSFET). Afterwards, the current-voltage (I-V) characteristics and ...

  9. Characteristics of type IV collagen unfolding under various pH conditions as a model of pathological disorder in tissue.

    Science.gov (United States)

    Shimizu, Akio; Kawai, Kenichi; Yanagino, Miki; Wakiyama, Toshiko; Machida, Minoru; Kameyama, Kohji; Naito, Zenya

    2007-07-01

    The overall structure of type IV collagen is the same at neutral and acidic pH, as determined by circular dichroism spectra. The heating rate dependence of denaturation midpoint temperature (T(m)) shows that type IV collagen is unstable at body temperature, similarly to type I collagen. The heating rate dependence of T(m) at neutral pH has two phases, but that at acidic pH apparently has a single phase. The T(m) of the first phase (lower T(m)) at neutral pH is consistent with that at acidic pH, and the activation energy of these phases is consistent, within experimental error. The triple helix region of type IV collagen corresponding to the second phase (higher T(m)) at neutral pH is thermally stable when compared to the triple helical structure at acidic pH. At acidic pH, as the loosely packed and unstable region has spread throughout the whole molecule, the thermal transition is thought to be cooperative and is observed as a single phase. Structural flexibility is related to protein function and assembly; therefore, the unstable structure and increased flexibility of type IV collagen induced at acidic pH may affect diseases accompanied by type IV collagen disorder.

  10. The current-voltage relationship revisited: exact and approximate formulas with almost general validity for hot magnetospheric electrons for bi-Maxwellian and kappa distributions

    Directory of Open Access Journals (Sweden)

    P. Janhunen

    Full Text Available We derive the current-voltage relationship in the auroral region taking into account magnetospheric electrons for the bi-Maxwellian and kappa source plasma distribution functions. The current-voltage formulas have in principle been well known for a long time, but the kappa energy flux formulas have not appeared in the literature before. We give a unified treatment of the bi-Maxwellian and kappa distributions, correcting some errors in previous work. We give both exact results and two kinds of approximate formulas for the current density and the energy flux. The first approximation is almost generally valid and is practical to compute. The first approximation formulas are therefore suitable for use in simulations. In the second approximation we assume in addition that the thermal energy is small compared to the potential drop. This yields even simpler linear formulas which are suitable for many types of event studies and which have a more transparent physical interpretation than the first approximation formulas. We also show how it is possible to derive the first approximation formulas even for those distributions for which the exact results can not be computed analytically. The kappa field-aligned conductance value turns out always to be smaller than the corresponding Maxwellian conductance. We also verify that the obtained kappa current density and energy flux formulas go to Maxwellian results when κ→∞.

    Key words. Current-voltage relationship · Bi-Maxwellian distributions · Kappa distribution

  11. Asymptotic and numerical prediction of current-voltage curves for an organic bilayer solar cell under varying illumination and comparison to the Shockley equivalent circuit

    KAUST Repository

    Foster, J. M.

    2013-01-01

    In this study, a drift-diffusion model is used to derive the current-voltage curves of an organic bilayer solar cell consisting of slabs of electron acceptor and electron donor materials sandwiched together between current collectors. A simplified version of the standard drift-diffusion equations is employed in which minority carrier densities are neglected. This is justified by the large disparities in electron affinity and ionisation potential between the two materials. The resulting equations are solved (via both asymptotic and numerical techniques) in conjunction with (i) Ohmic boundary conditions on the contacts and (ii) an internal boundary condition, imposed on the interface between the two materials, that accounts for charge pair generation (resulting from the dissociation of excitons) and charge pair recombination. Current-voltage curves are calculated from the solution to this model as a function of the strength of the solar charge generation. In the physically relevant power generating regime, it is shown that these current-voltage curves are well-approximated by a Shockley equivalent circuit model. Furthermore, since our drift-diffusion model is predictive, it can be used to directly calculate equivalent circuit parameters from the material parameters of the device. © 2013 AIP Publishing LLC.

  12. Gallium Nitride Electrical Characteristics Extraction and Uniformity Sorting

    Directory of Open Access Journals (Sweden)

    Shyr-Long Jeng

    2015-01-01

    Full Text Available This study examined the output electrical characteristics—current-voltage (I-V output, threshold voltage, and parasitic capacitance—of novel gallium nitride (GaN power transistors. Experimental measurements revealed that both enhanced- and depletion-mode GaN field-effect transistors (FETs containing different components of identical specifications yielded varied turn-off impedance; hence, the FET quality was inconsistent. Establishing standardized electrical measurements can provide necessary information for designers, and measuring transistor electrical characteristics establishes its equivalent-circuit model for circuit simulations. Moreover, high power output requires multiple parallel power transistors, and sorting the difference between similar electrical characteristics is critical in a power system. An isolated gate driver detection method is proposed for sorting the uniformity from the option of the turn-off characteristic. In addition, an equivalent-circuit model for GaN FETs is established on the basis of the measured electrical characteristics and verified experimentally.

  13. Preparation of n-ZnO/p-CuO Coaxial Nanocable Heterojunction and Its I-V Characteristic%n-ZnO/p-CuO同轴纳米线异质结的制备及其I-V特性

    Institute of Scientific and Technical Information of China (English)

    彭伟; 李金钗

    2013-01-01

    n-ZnO/p-CuO coaxial nanocable heterojunctions were fabricated b' a t (o)-step method.The ZnO nanowires were first synthesized on silicon(100) substrates via a thermal vapor deposition route.Then the CuO shells with uniform,intensive and ultrafine CuO nanoparticles were prepared on the surfaces of ZnO nanowires using the ion beam sputtering technology combining thermal oxidation process.Scanning electron microscopy (SEM),X-ray diffraction (XRD),transmission electron microscopy(TEM)and high-resolution transmission electron microscopy (HR-TEM) were used to study the morphology,composition and crystal structure of ZnO/CuO samples.The results indicate that the grown ZnO nanowires have Wurtzite single-crystalline structure and the CuO nanoshells display polycrystalline structure.The current-voltage (I-V) measurement based on the n-ZnO/p-CuO hetrojunctions showed an excellent typical semiconductor rectification characteristic.The n-ZnO/p-CuO coaxial nanocable heterojunctions,with large heterojunction area,large light illumination surface area and strong surface chemical activity,have promising applications in the fields of nano-rectifiers with high current density,solar cells,photosensitive devices and gas sensors.%采用热蒸发气相沉积法在Si(100)衬底上生长直径约为60~70 nm的氧化锌(ZnO)纳米线,迸一步运用离子束溅射技术和热氧化工艺在ZnO纳米线表面形成含有均匀密集分布的超细氧化铜(CuO)纳米颗粒的CuO壳层,构成n-ZnO(核芯)/p-CuO(壳层)同轴纳米线异质结.扫描电子显微镜(SEM)、X射线衍射(XRD)、透射电子显微镜(TEM)和高分辨透射电子显微镜(HRTEM)用于研究样品的形貌、成分和晶体结构.实验结果表明,生长的ZnO纳米线呈纤锌矿单晶结构,CuO壳层为多晶结构.I-V曲线表明该同轴纳米线异质结构具有优良的二极管整流特性.这种具有大的异质结面积和高的比表面受光面积及强的表面化学活性的n-ZnO/p-CuO同轴纳

  14. I-V measurements of Ge-Se-Sn chalcogenide glassy alloys

    Directory of Open Access Journals (Sweden)

    Vandana Kumari

    2015-03-01

    Full Text Available Current-voltage characteristics and DC electrical conductivity were studied for Ge30-xSe70Snx (x = 8, 11, 14, 17 and 20 glassy thin pellets of diameter 12 mm and thickness 1 mm prepared under a constant load of 5 tons using a well-known melt quenching technique in bulk as a function of composition. The I-V characteristics were recorded at room temperature as well as elevated temperatures up to 300 °C. The experimental data suggests that glass containing 20 at.% of Sn has the minimum resistance allowing maximum current through the sample as compared to other counterparts of the series. Therefore, DC conductivity is found to increase with increasing Sn concentration. Composition dependence of DC conductivity is discussed in terms of the bonding between Se and Sn. Plots between ln I and V1/2 provide linear relationship for both low and high voltage range. These results have been explained through the Pool-Frenkel mechanism. The I-V characteristics show ohmic behaviour in the low voltage range and this behaviour turns to non-ohmic from ohmic in the higher voltage range due to voltage induced temperature effects.

  15. Effects of ageing on the electrical characteristics of Zn/ZnS/n-GaAs/In structure

    Science.gov (United States)

    Güzeldir, B.; Sağlam, M.

    2016-04-01

    Zn/ZnS/n-GaAs/In structure has been fabricated by the Successive Ionic Layer Adsorption and Reaction (SILAR) method and the influence of the time dependent or ageing on the characteristic parameters are examined. The current-voltage (I-V) of the structure have been measured immediately, 1, 3, 5, 15, 30, 45, 60, 75, 90, 105, 120, 135, 150 and 165 days after fabrication of this structure. The characteristics parameters of this structure such as barrier height, ideality factor, series resistance are calculated from the I-V measurements. It has been seen that the changes of characteristic parameters such as barrier height, ideality factor and series resistance of Zn/ZnS/n-GaAs/In structure have lightly changed with increasing ageing time.

  16. Triorganotin(IV) complexes with biologically potent schiff bases: infrared, ¹¹⁹Sn spectral characteristics and antimicrobial applications.

    Science.gov (United States)

    Rehman, W; Khan, J; Muhammad, B; Shah, S W H; Rashid, R

    2012-05-01

    This review paper has attempted information specific to the title compound. This survey of the literature data provides useful information about the design and stabilities of the triorganotin with biologically active ligands. Up to now, considerable efforts have been made to synthesize and characterize triorganotin(IV) schiff base complexes with the general formulae R3ML [R = organic group, M: Sn and L: schiff base] and many studies have been focused in order to understand bioassay results. Users with an interest in this substance are strongly encouraged for future research that this is still a very open field.

  17. Influence of series resistance and cooling conditions on I-V characteristics of SiC merged PiN Schottky diodes

    Energy Technology Data Exchange (ETDEWEB)

    Hapka, Aneta, E-mail: hapka@ie.tu.koszalin.pl [Department of Electronics and Computer Science, Koszalin University of Technology, J. J. Sniadeckich 2, Koszalin, Postal Code: 75-453 (Poland); Janke, Wlodzimierz; Krasniewski, Jaroslaw [Department of Electronics and Computer Science, Koszalin University of Technology, J. J. Sniadeckich 2, Koszalin, Postal Code: 75-453 (Poland)

    2012-09-01

    The paper presents the exemplary electro-thermal models of merged PiN Schottky diode - a diode with the parallel PiN junction, protecting the device against the uncontrolled voltage rise, causing so-called thermal runaway. In the presented models, the conductivity modulation effect in the PiN junction is taken into account. The influence of the PiN junction on the non-isothermal I-V characteristics of MPS diodes, for various cooling conditions, is discussed. It is shown, that the thermal runaway is possible, in spite of presence of protecting PiN junction.

  18. Room-temperature I-V characteristics of a single hollow La₂/₃Ca₁/₃MnO₃ microparticle.

    Science.gov (United States)

    Saleta, M E; Granada, M; Curiale, J; Benavides, R; Troiani, H E; Sánchez, R D

    2011-07-13

    In this work we present an electrical characterization of La₂/₃Ca₁/₃MnO₃ particles obtained by spray pyrolysis. We optimized the synthesis conditions to obtain the desired compound with the expected structure and the ferromagnetic transition at the same temperature as the bulk material. We found that a post-deposition thermal treatment enhances the magnetic properties of the samples. The study of structural, morphological and magnetic properties shows that the walls of the hollow spheres are constituted by grains on the nanometer scale. The I-V characterization shows typical signatures of tunneling transport. This behavior can be associated with the grain boundaries within the microparticle's wall acting as tunnel barriers.

  19. Preparation of ZnO film on p-Si and I-V characteristics of p-Si/n-ZnO

    Directory of Open Access Journals (Sweden)

    Shampa Mondal

    2013-02-01

    Full Text Available Zinc oxide (ZnO thin films were deposited on p-silicon (Si substrate from ammonium zincate bath following a chemical dipping technique called SILAR. Films in the thickness range 0.5-4.5 µm could be prepared by varying the number of dipping for a fixed concentration (0.125 M of zincate bath and fixed pH (11.00-11.10. Higher values of dipping produced nonadherent and poor quality films. Structural characterization by X-ray diffraction (XRD indicates the formation of polycrystalline single phase ZnO with strong c-axis orientation. The structural characteristics of the films were found to be a sensitive function of film thickness. The degree of orientation was found to be a function of film thickness and a maximum was found at around 2.2 µm. Scanning electron microscopy (SEM reveals the formation of sub-micrometer crystallites on silicon substrate. The coverage of crystallites (grains on substrate surface increases with number of dipping. Dense film containing grains distributed throughout the surface is obtained at large thicknesses. The ohmic nature of silver (Ag on ZnO and Aluminum (Al on p-Si was confirmed by I-V measurements. I-V characteristic of the p-Si/n-ZnO heterojunction was studied and rectification was observed. The maximum value of forward to reverse current ratio was ~15 at 3.0 V.

  20. Preparation of ZnO film on p-Si and I-V characteristics of p-Si/n-ZnO

    Directory of Open Access Journals (Sweden)

    Shampa Mondal

    2012-01-01

    Full Text Available Zinc oxide (ZnO thin films were deposited on p-silicon (Si substrate from ammonium zincate bath following a chemical dipping technique called SILAR. Films in the thickness range 0.5-4.5 µm could be prepared by varying the number of dipping for a fixed concentration (0.125 M of zincate bath and fixed pH (11.00-11.10. Higher values of dipping produced nonadherent and poor quality films. Structural characterization by X-ray diffraction (XRD indicates the formation of polycrystalline single phase ZnO with strong c-axis orientation. The structural characteristics of the films were found to be a sensitive function of film thickness. The degree of orientation was found to be a function of film thickness and a maximum was found at around 2.2 µm. Scanning electron microscopy (SEM reveals the formation of sub-micrometer crystallites on silicon substrate. The coverage of crystallites (grains on substrate surface increases with number of dipping. Dense film containing grains distributed throughout the surface is obtained at large thicknesses. The ohmic nature of silver (Ag on ZnO and Aluminum (Al on p-Si was confirmed by I-V measurements. I-V characteristic of the p-Si/n-ZnO heterojunction was studied and rectification was observed. The maximum value of forward to reverse current ratio was ~15 at 3.0 V.

  1. Effects of the Au/CdTe back contact on IV and CV characteristics of Au/CdTe/CdS/TCO solar cells

    Science.gov (United States)

    Niemegeers, Alex; Burgelman, Marc

    1997-03-01

    A simple analytical theory is presented to explain the measured roll over and cross over behaviour of the IV characteristics of thin film CdTe solar cells. It involves a classical description of the CdS/CdTe junction and the CdTe/back contact structure and is extended with a new description of minority carrier current in the CdTe contact region. This extension is crucial in describing the light dependence of the forward IV curves, and hence cross over. The same model also explains the measured CV curves. It is shown that analysis of the capacitance measurement can yield additional information about the doping density of CdTe in the vicinity of the contact. A relationship between the fill factor of the solar cell and the barrier height of the back contact is derived; this relation is useful as a new, practical criterion for the quality of the back contact. The results of this simple analytical model are confirmed by full numerical calculations of the dc and ac characteristics.

  2. Schottky Diode Applications of the Fast Green FCF Organic Material and the Analyze of Solar Cell Characteristics

    Science.gov (United States)

    Çaldiran, Z.; Aydoğan, Ş.; İncekara, Ü.

    2016-05-01

    In this study, a device applications of organic material Fast Green FCF (C37H34N2Na2O10S3Na2) has been investigated. After chemical cleaning process of boron doped H-Si crystals, Al metal was coated on the one surface of crystals by thermal evaporation and fast green organic materials were coated on other surface of crystals with spin coating method (coating parameters; 800 rpm for 60 s). Finally, Ni metal was coated on Fast Green by sputtering and we obtained the Ni/Fast Green FCF/n-Si/Al Schottky type diode. And then we calculated the basic diode parameters of device with current-voltage (I-V) and capacitance- voltage (C-V) measurements at the room temperature. We calculated the ideality factory (n), barrier height (Φb) of rectifing contact from I-V measurements using thermionic emission methods. Furthermore, we calculated ideality factory (n), barrier height (Φb) and series resistance (Rs) of device using Cheung and Norde functions too. The diffusion potential, barrier height, Fermi energy level and donor concentration have been determined from the linear 1/C2-V curves at reverse bias, at room temperature and various frequencies. Besides we measured the current-voltage (I-V) at under light and analyzed the characteristics of the solar cell device.

  3. On the interpretation of current-voltage curves in ionization chambers using the exact solution of the Thomson problem

    Science.gov (United States)

    Ridenti, M. A.; Pascholati, P. R.; Gonçalves, J. A. C.; Bueno, C. C.

    2015-09-01

    The I - ΔV characteristic curve of a well type ionization chamber irradiated with 192Ir sources (0.75 Ci-120 Ci) was fitted using the exact solution of the Thomson problem. The recombination coefficient and saturation current were estimated using this new approach. The saturation current was compared with the results of the conventional method based on Boag-Wilson formula. It was verified that differences larger than 1% between both methods only occurred at activities higher than 55 Ci. We concluded that this new approach is recommended for a more accurate estimate of the saturation current when it is not possible to measure currents satisfying the condition I /Isat > 0.95. From the calibration curve the average value of pairs of carriers created per unit volume was estimated to be equal to η = 8.1 ×10-3cm-3s-1 Bq-1 and from that value it was estimated that ~ 17 pairs were created on average per second for each decay of the source.

  4. An Efficient approach for Shielding Effect of the Grounding Electrodes under Impulse-Current Voltage based on MATLAB

    Directory of Open Access Journals (Sweden)

    Kalyani Pole

    2012-06-01

    Full Text Available The lightning current waveform has a major influence on the dynamic performance of ground electrodes. While high lightning current intensity improves the dynamic grounding performance due to ionization of the soil, very fast fronted pulses might worsen the performance in case of inductive behaviour. The previous analysis has often been based on quasistatic approximation that is not applicable to very fast fronted pulses. Previous Research focused on analyzing the impulse current dispersal regularity of different branches when injecting at one point. Comparing with the leakage current distribution of a single ground electrode, it is found that the leakage currents along the branches increase with the distance to the current feed point, and the more conductors near the injection point, the more uneven the leakage current distribution is. In this paper by simulation result we indicate that shielding effect should be taken into account when analyzing the impulse characteristics of grounding electrodes. Based on the simulation results, new empirical formulas applicable for slow and very fast fronted lightning current pulses are proposed. The effects of the ionization of the soil are disregarded; therefore, the new formulas are applicable for a conservative estimate of the upper bound of the impulse impedance of ground electrodes. In this paper we also analyze and compare by the MATLAB. We also provide dynamic behavior of ground electrodes.

  5. Effects of hydrogen, oxygen, and argon annealing on the electrical properties of ZnO and ZnO devices studied by current-voltage, deep level transient spectroscopy, and Laplace DLTS

    Science.gov (United States)

    Mtangi, W.; Auret, F. D.; Meyer, W. E.; Legodi, M. J.; Janse van Rensburg, P. J.; Coelho, S. M. M.; Diale, M.; Nel, J. M.

    2012-05-01

    Effects of annealing ZnO in hydrogen, oxygen, and argon have been investigated using deep level transient spectroscopy (DLTS) and Laplace-DLTS (LDLTS) measurements. Current-voltage (IV) measurements indicate a decrease in zero-bias barrier height for all the annealed samples. Conventional DLTS measurements reveal the presence of three prominent peaks in the un-annealed and annealed samples. A new peak with an activation enthalpy of 0.60 eV has been observed in the H2 annealed samples, while an estimated energy level of 0.67 eV has been observed in Ar annealed samples. O2 annealing does not introduce new peaks but causes a decrease in the concentration of the E3 peak and an increase in concentration of the E1 peak. The concentrations of all the intrinsic defects have decreased after H2 and Ar annealing; with Ar annealing giving peaks with the lowest concentrations. The E2 peak anneals out after annealing ZnO in Ar and H2 at 300 °C. From the annealing behaviour of E3, we have attributed to transition metal ion related defects, while E4 has been explained as a defect, whose formation favours oxygen deficient conditions. Laplace DLTS has successfully been employed to resolve the closely spaced energy levels in the E4 peak, splitting it into three peaks with energy levels, 0.68 eV, 0.58 eV, and 0.50 eV below the minimum of the conduction band for the Ar annealed sample.

  6. High concentration effects of neutral-potential-well interface traps on recombination dc current-voltage lineshape in metal-oxide-silicon transistors

    Science.gov (United States)

    Chen, Zuhui; Jie, Bin B.; Sah, Chih-Tang

    2008-11-01

    Steady-state Shockley-Read-Hall kinetics is employed to explore the high concentration effect of neutral-potential-well interface traps on the electron-hole recombination direct-current current-voltage (R-DCIV) properties in metal-oxide-silicon field-effect transistors. Extensive calculations include device parameter variations in neutral-trapping-potential-well electron interface-trap density NET (charge states 0 and -1), dopant impurity concentration PIM, oxide thickness Xox, forward source/drain junction bias VPN, and transistor temperature T. It shows significant distortion of the R-DCIV lineshape by the high concentrations of the interface traps. The result suggests that the lineshape distortion observed in past experiments, previously attributed to spatial variation in surface impurity concentration and energy distribution of interface traps in the silicon energy gap, can also arise from interface-trap concentration along surface channel region.

  7. The role of cathodic current in PEO of aluminum: Influence of cationic electrolyte composition on the transient current-voltage curves and the discharges optical emission spectra

    Science.gov (United States)

    Rogov, A. B.; Shayapov, V. R.

    2017-02-01

    In this paper, the influence of cationic electrolytes composition on electrical and optical responses of plasma electrolytic oxidation process of A1050 aluminum alloy under alternating polarization is considered. The electrolytes consist of 0.1 M boric acid with addition of one of the following hydroxides: LiOH, NaOH, KOH, tetraethylammonium hydroxide, Ca(OH)2 up to pH value 9.2. Coatings microstructure, elemental and phase compositions were studied by SEM, EDS and XRD. It was shown that the hysteresis of anodic current-voltage curve (specific feature of "Soft sparking" PEO) was clear observed in the presence of sodium and potassium cations. It was found that composition of microdischarges plasma is also affected by the nature of the cations. It was shown that there are a number of reciprocal processes, which take place under anodic and cathodic polarization.

  8. Characteristics of gambling and problematic gambling in the Norwegian context: a DSM-IV-based telephone interview study.

    Science.gov (United States)

    Götestam, K Gunnar; Johansson, Agneta

    2003-01-01

    The gaming business has increased considerably during the past years, and there are also some indications that the prevalence of pathological gambling has also increased. As it is important to know the problem size and character, an epidemiological study was performed in a representative sample of the Norwegian population (N = 2014; response rate 47.8%). The proportion that never gambled was 31.2%, and a majority (47.2%) gambled sometimes, while 21.0% gambled often. Men (25.5%) gambled more often than women (17.7%). Lotto was the most popular game with 76.0%, followed by football tip (10.8%), slot machines (5.1%), and lotteries (4.9%). For some types of plays, there was a discrepancy between rank for playing, and for problematic playing. Slot machines gave higher problematic playing rank. The mean prevalence of problematic gambling (pathological gambling plus at-risk gambling) was 0.60%, with higher prevalence for those younger and for men. Men 18-30 had a very high prevalence (2.83), compared to men over 30 (0.28%) and females 18-30 (0.84) and over 30 (0.12%). The total problematic gambling frequency was 1.97% for 18-30 years, and 0.1% over 30. There are no problematic gamblers over 50 in the material. The DSM-IV with its only 10 questions gives a conservative estimate of pathological gambling. There were significant correlations between degree of gambling and some established risk factors.

  9. Asteroids IV

    Science.gov (United States)

    Michel, Patrick; DeMeo, Francesca E.; Bottke, William F.

    . Asteroids, like planets, are driven by a great variety of both dynamical and physical mechanisms. In fact, images sent back by space missions show a collection of small worlds whose characteristics seem designed to overthrow our preconceived notions. Given their wide range of sizes and surface compositions, it is clear that many formed in very different places and at different times within the solar nebula. These characteristics make them an exciting challenge for researchers who crave complex problems. The return of samples from these bodies may ultimately be needed to provide us with solutions. In the book Asteroids IV, the editors and authors have taken major strides in the long journey toward a much deeper understanding of our fascinating planetary ancestors. This book reviews major advances in 43 chapters that have been written and reviewed by a team of more than 200 international authorities in asteroids. It is aimed to be as comprehensive as possible while also remaining accessible to students and researchers who are interested in learning about these small but nonetheless important worlds. We hope this volume will serve as a leading reference on the topic of asteroids for the decade to come. We are deeply indebted to the many authors and referees for their tremendous efforts in helping us create Asteroids IV. We also thank the members of the Asteroids IV scientific organizing committee for helping us shape the structure and content of the book. The conference associated with the book, "Asteroids Comets Meteors 2014" held June 30-July 4, 2014, in Helsinki, Finland, did an outstanding job of demonstrating how much progress we have made in the field over the last decade. We are extremely grateful to our host Karri Muinonnen and his team. The editors are also grateful to the Asteroids IV production staff, namely Renée Dotson and her colleagues at the Lunar and Planetary Institute, for their efforts, their invaluable assistance, and their enthusiasm; they made life as

  10. Analysis of the current-voltage characteristics of polymer-based organic light-emitting diodes (OLEDs) deposited by spin coating

    OpenAIRE

    Ricardo Vera; Juan Carlos Salcedo-Reyes; Juan Pablo Cuéllar-Alvarado; Diana Rocío Pardo-Pardo; Henry Alberto Méndez-Pinzón; Beynor Antonio Páez-Sierra

    2010-01-01

    Polymer-based organic light-emitting diodes (OLEDs) with the structure ITO / PEDOT:PSS / MDMO-PPV / Metal were prepared by spincoating. It is known that electroluminescence of these devices is strongly dependent on the material used as cathode and on the depositionparameters of the polymer electroluminescent layer MDMO-PPV. Objective. In this work the effect of i) the frequency of the spin coater(1000-8000 rpm), ii) the concentration of the MDMO-PPV: Toluene solution, and iii) the material us...

  11. Temperature and Magnetic Field Driven Modifications in the I-V Features of Gold-DNA-Gold Structure

    Directory of Open Access Journals (Sweden)

    Nadia Mahmoudi Khatir

    2014-10-01

    Full Text Available The fabrication of Metal-DNA-Metal (MDM structure-based high sensitivity sensors from DNA micro-and nanoarray strands is a key issue in their development. The tunable semiconducting response of DNA in the presence of external electromagnetic and thermal fields is a gift for molecular electronics. The impact of temperatures (25–55 °C and magnetic fields (0–1200 mT on the current-voltage (I-V features of Au-DNA-Au (GDG structures with an optimum gap of 10 μm is reported. The I-V characteristics acquired in the presence and absence of magnetic fields demonstrated the semiconducting diode nature of DNA in GDG structures with high temperature sensitivity. The saturation current in the absence of magnetic field was found to increase sharply with the increase of temperature up to 45 °C and decrease rapidly thereafter. This increase was attributed to the temperature-assisted conversion of double bonds into single bond in DNA structures. Furthermore, the potential barrier height and Richardson constant for all the structures increased steadily with the increase of external magnetic field irrespective of temperature variations. Our observation on magnetic field and temperature sensitivity of I-V response in GDG sandwiches may contribute towards the development of DNA-based magnetic sensors.

  12. Experimental analysis and modeling of the IV characteristics of photovoltaic solar cells under solar spectrum spot illumination

    Energy Technology Data Exchange (ETDEWEB)

    Munji, M.K., E-mail: mathew.munji@nmmu.ac.z [Department of Physics, Nelson Mandela Metropolitan University, PO Box 7700 Port Elizabeth 6031 (South Africa); Dyk, E.E. van; Vorster, F.J. [Department of Physics, Nelson Mandela Metropolitan University, PO Box 7700 Port Elizabeth 6031 (South Africa)

    2009-12-01

    In this paper, some models that have been put forward to explain the characteristics of a photovoltaic solar cell device under solar spot-illumination are investigated. In the experimental procedure, small areas of the cell were selected and illuminated at different solar intensities. The solar cell open circuit voltage (V{sub oc}) and short circuit current (I{sub sc}) obtained at different illumination intensities was used to determine the solar cell ideality factor. By varying the illuminated area on the solar cell, changes in the ideality factor were studied. The ideality factor obtained increases with decreasing illumination surface ratio. The photo-generated current at the illuminated part of the cell is assumed to act as a dc source that injects charge carriers into the p-n junction of the whole solar cell while the dark region of the solar cell operates in a low space charge recombination regime with small diffusion currents. From this analysis, a different model of a spot illuminated cell that uses the variation of ideality factor with the illuminated area is proposed.

  13. A change of in vivo characteristics depending on specific activity of radioiodinated (+)-2-[4-(4-iodophenyl)piperidino]cyclohexanol [(+)-pIV] as a ligand for sigma receptor imaging.

    Science.gov (United States)

    Akhter, Nasima; Shiba, Kazuhiro; Ogawa, Kazuma; Tsuji, Shiro; Kinuya, Seigo; Nakajima, Kenichi; Mori, Hirofumi

    2008-01-01

    The radioiodinated (+)-p-iodovesamicol [(+)-pIV], which shows a high binding affinity for sigma-1 (sigma-1) receptors, is prepared by an exchange reaction. The specific activity (SA) is fairly low and therefore is insufficient for clinical use. In this study, we prepared (+)-[(125)I]pIV with a high SA from tributylstannyl precursor and compared the in vivo characteristics between high and low SA by imaging sigma-1 receptors in the central nervous system. In the biodistribution study, a difference in brain accumulation was observed between the two methods. At 30 min postinjection, the brain accumulation (1.58%ID/g) of low SA [0.6-1.1 TBq/mmol (16-30 Ci/mmol)] (+)-[(125)I]pIV was higher than that (1.34%ID/g) of high SA [>88.8 TBq/mmol (>2400 Ci/mmol)] (+)-[(125)I]pIV. In the blocking study, the brain uptake of high SA (+)-[(125)I]pIV was reduced more significantly by the coadministration of sigma ligands such as pentazocine, haloperidol or SA4503 than that of low SA (+)-[(125)I]pIV. These results showed that nonspecific binding of high SA (+)-[(125)I]pIV in the brain was lower than that of low SA (+)-[(125)I]pIV, and high SA (+)-[(125)I]pIV bound more specifically to sigma-1 receptors in the brain than low SA (+)-[(125)I]pIV. In contrast, in the blood-binding study, high SA (+)-[(125)I]pIV (58.4%) bound to blood cells with higher affinity than low SA (+)-[(125)I]pIV (46.0%). In metabolite studies, blood metabolites of high SA (+)-[(125)I]pIV (57.3+/-3.5%) were higher than those of low SA (+)-[(125)I]pIV (45.5+/-4.1%) at 30 min postinjection. Higher SA may be apt to bind to blood cells with higher affinity and to be metabolized faster.

  14. A change of in vivo characteristics depending on specific activity of radioiodinated (+)-2-[4-(4-iodophenyl)piperidino]cyclohexanol [(+)-pIV] as a ligand for sigma receptor imaging

    Energy Technology Data Exchange (ETDEWEB)

    Akhter, Nasima [Department of Biotracer Medicine, Kanazawa University, Kanazawa 920-8640, Ishikawa (Japan); Shiba, Kazuhiro [Division of Tracer Kinetics, Advanced Science Research Center, Kanazawa University, Kanazawa 920-8640, Ishikawa (Japan)], E-mail: shiba@med.kanazawa-u.ac.jp; Ogawa, Kazuma [Division of Tracer Kinetics, Advanced Science Research Center, Kanazawa University, Kanazawa 920-8640, Ishikawa (Japan); Tsuji, Shiro [School of Health Sciences, Kanazawa University, Kanazawa 920-8640, Ishikawa (Japan); Kinuya, Seigo; Nakajima, Kenichi [Department of Biotracer Medicine, Kanazawa University, Kanazawa 920-8640, Ishikawa (Japan); Mori, Hirofumi [Division of Tracer Kinetics, Advanced Science Research Center, Kanazawa University, Kanazawa 920-8640, Ishikawa (Japan)

    2008-01-15

    The radioiodinated (+)-p-iodovesamicol [(+)-pIV], which shows a high binding affinity for sigma-1 ({sigma}-1) receptors, is prepared by an exchange reaction. The specific activity (SA) is fairly low and therefore is insufficient for clinical use. In this study, we prepared (+)-[{sup 125}I]pIV with a high SA from tributylstannyl precursor and compared the in vivo characteristics between high and low SA by imaging {sigma}-1 receptors in the central nervous system. In the biodistribution study, a difference in brain accumulation was observed between the two methods. At 30 min postinjection, the brain accumulation (1.58%ID/g) of low SA [0.6-1.1 TBq/mmol (16-30 Ci/mmol)] (+)-[{sup 125}I]pIV was higher than that (1.34%ID/g) of high SA [>88.8 TBq/mmol (>2400 Ci/mmol)] (+)-[{sup 125}I]pIV. In the blocking study, the brain uptake of high SA (+)-[{sup 125}I]pIV was reduced more significantly by the coadministration of sigma ligands such as pentazocine, haloperidol or SA4503 than that of low SA (+)-[{sup 125}I]pIV. These results showed that nonspecific binding of high SA (+)-[{sup 125}I]pIV in the brain was lower than that of low SA (+)-[{sup 125}I]pIV, and high SA (+)-[{sup 125}I]pIV bound more specifically to {sigma}-1 receptors in the brain than low SA (+)-[{sup 125}I]pIV. In contrast, in the blood-binding study, high SA (+)-[{sup 125}I]pIV (58.4%) bound to blood cells with higher affinity than low SA (+)-[{sup 125}I]pIV (46.0%). In metabolite studies, blood metabolites of high SA (+)-[{sup 125}I]pIV (57.3{+-}3.5%) were higher than those of low SA (+)-[{sup 125}I]pIV (45.5{+-}4.1%) at 30 min postinjection. Higher SA may be apt to bind to blood cells with higher affinity and to be metabolized faster.

  15. Emission characteristics of AuSiBe field ion sources

    Energy Technology Data Exchange (ETDEWEB)

    Drandarov, N.; Georgieva, St.; Nikolov, B.; Donchev, T. (Bylgarska Akademiya na Naukite, Sofia (Bulgaria). Inst. po Elektronika)

    A ribbon type AuSiBe alloy field ion source, which combines the advantages of both hairpin type sources and reservoir type sources, has been constructed. The current-voltage characteristics of this source have been investigated. Hysteresis and four differentiated emission regions have been observed for them. By means of scanning electronic microscopy, it has been established that this complicated behaviour of the I-V curves and the angular distribution of the extracted ions are associated with the shape of the emitting surface. The mass spectrum of the emitted ions has been determined by means of an E x B mass filter. Considerable emission of Au[sup +], AuBe[sub 3][sup 2+], Si[sup 2+], Be[sup 2+], AuBe[sub 3][sup +], Be[sup +], Si[sup +], and Au[sup 2+] has been observed. (author).

  16. Zero-dipole molecular organic cations in mixed organic-inorganic halide perovskites: possible chemical solution for the reported anomalous hysteresis in the current-voltage curve measurements.

    Science.gov (United States)

    Giorgi, Giacomo; Yamashita, Koichi

    2015-11-06

    Starting from a brief description of the main architectures characterizing the novel solar technology of perovskite-based solar cells, we focus our attention on the anomalous hysteresis experimentally found to affect the measurement of the current-voltage curve of such devices. This detrimental effect, associated with slow dynamic reorganization processes, depends on several parameters; among them, the scan rate of the measurements, the architecture of the cell, and the perovskite deposition rate are crucial. Even if a conclusive explanation of the origin of the hysteresis has not been provided so far, several experimental findings ascribe its origin to ionic migration at an applied bias and dielectric polarization that occurs in the perovskite layer. Consistently, a dipole-moment-reduced cation such as formamidinium ion is experimentally reported to quantitatively reduce the hysteresis from perovskite-based devices. By means of a density-functional theory-based set of calculations, we have predicted and characterized guanidinium ion (GA = (+)[C(NH2)3], a zero-dipole moment cation by symmetry)-based organic-inorganic halide perovskite's structural and electronic properties, speculating that such a cation and the alloys it may form with other organic cations can represent a possible chemical solution for the puzzling issue of the hysteresis.

  17. Interplanetary Type IV Bursts

    CERN Document Server

    Hillaris, Alexander; Nindos, Alexander

    2016-01-01

    In this work we study the characteristics of moving type IV radio bursts which extend to the hectometric wavelengths (interplanetary type IV or type IV IP bursts) and their relationship with energetic phenomena on the Sun. Our dataset comprised 48 Interplanetary type IV bursts observed by the Wind/WAVES in the 13.825 MHz?20 KHz frequency range. The dynamic spec tra of the RSTN, DAM, ARTEMIS-IV, CULGOORA, Hiraiso and IZMIRAN Radio-spectrographs were used to track the evolution of the events in the low corona; these were supplemented with SXR ?ux recordings from GOES and CME data from LASCO. Positional information for the coronal bursts were obtained by the Nan\\c{c}ay radioheliograph (NRH). We examined the relationship of the type IV events with coronal radio bursts, CMEs and SXR ?ares. The majority of the events (45) were characterized as compact; their duration was on average 106 min. This type of events were, mostly, associated with M and X class ?ares (40 out of 45) and fast CMEs; 32 of these events had CME...

  18. Parameters Affecting I-V Hysteresis of CH3NH3PbI3 Perovskite Solar Cells: Effects of Perovskite Crystal Size and Mesoporous TiO2 Layer.

    Science.gov (United States)

    Kim, Hui-Seon; Park, Nam-Gyu

    2014-09-04

    Current-voltage (I-V) characteristics of CH3NH3PbI3 perovskite solar cells are studied using a time-dependent current response with stepwise sweeping of the bias voltage. Compared with the crystalline Si solar cell showing time-independent current at a given bias voltage, the perovskite solar cells exhibit time-dependent current response. The current increases with time and becomes steady at forward scan from short-circuit to open-circuit, whereas it is decayed and saturated with time at reverse scan from open-circuit to short-circuit. Time-dependent current response eventually leads to I-V hysteresis depending on the scan direction and the scan rate. Crystal size of CH3NH3PbI3 and the mesoporous TiO2 (mp-TiO2) film are found to influence I-V hysteresis, where the I-V hysteresis is alleviated as crystal size increases and in the presence of mp-TiO2. The capacitance observed at low frequency (0.1 to 1 Hz), associated with dipole polarization, tends to diminish as size of perovskite and mp-TiO2 layer thickness increases, which suggests that the origin of hysteresis correlates to the capacitive characteristic of CH3NH3PbI3 and the degree of hysteresis depends strongly on perovskite crystal size and mesoporous TiO2 layer.

  19. Damage Induced by Neutron Radiation on Output Characteristics of Solar Cells, Photodiodes, and Phototransistors

    Directory of Open Access Journals (Sweden)

    Biljana Simić

    2013-01-01

    Full Text Available This study investigates the effects of neutron radiation on I-V characteristics (current dependance on voltage of commercial optoelectronic devices (silicon photodiodes, phototransistors, and solar panels. Current-voltage characteristics of the samples were measured at room temperature before and after irradiation. The diodes were irradiated using Am-Be neutron source with neutron emission of 2.7×106 n/s. The results showed a decrease in photocurrent for all samples which could be due to the existence of neutron-induced displacement defects introduced into the semiconductor lattice. The process of annealing has also been observed. A comparative analysis of measurement results has been performed in order to determine the reliability of optoelectronic devices in radiation environments.

  20. Nitrogen plasma-treated multilayer graphene-based field effect transistor fabrication and electronic characteristics

    Science.gov (United States)

    Su, Wei-Jhih; Chang, Hsuan-Chen; Honda, Shin-ichi; Lin, Pao-Hung; Huang, Ying-Sheng; Lee, Kuei-Yi

    2017-08-01

    Chemical doping with hetero-atoms is an effective method used to change the characteristics of materials. Nitrogen doping technology plays a critical role in regulating the electronic properties of graphene. Nitrogen plasma treatment was used in this work to dope nitrogen atoms to modulate multilayer graphene electrical properties. The measured I-V multilayer graphene-base field-effect transistor characteristics (GFETs) showed a V-shaped transfer curve with the hole and electron region separated from the measured current-voltage (I-V) minimum. GFETs fabricated with multilayer graphene from chemical vapor deposition (CVD) exhibited p-type behavior because of oxygen adsorption. After using different nitrogen plasma treatment times, the minimum in I-V characteristic shifted into the negative gate voltage region with increased nitrogen concentration and the GFET channel became an n-type semiconductor. GFETs could be easily fabricated using this method with potential for various applications. The GFET transfer characteristics could be tuned precisely by adjusting the nitrogen plasma treatment time.

  1. Scaling and disorder analysis of local I-V curves from ferroelectric thin films of lead zirconate titanate.

    Science.gov (United States)

    Maksymovych, Peter; Pan, Minghu; Yu, Pu; Ramesh, Ramamoorthy; Baddorf, Arthur P; Kalinin, Sergei V

    2011-06-24

    Differential analysis of current-voltage characteristics, obtained on the surface of epitaxial films of ferroelectric lead zirconate titanate (Pb(Zr(0.2)Ti(0.8))O(3)) using scanning probe microscopy, was combined with spatially resolved mapping of variations in local conductance to differentiate between candidate mechanisms of local electronic transport and the origin of disorder. Within the assumed approximations, electron transport was inferred to be determined by two mechanisms depending on the magnitude of applied bias, with the low-bias range dominated by the trap-assisted Fowler-Nordheim tunneling through the interface and the high-bias range limited by the hopping conduction through the bulk. Phenomenological analysis of the I-V curves has further revealed that the transition between the low- and high-bias regimes is manifested both in the strength of variations within the I-V curves sampled across the surface, as well as the spatial distribution of conductance. Spatial variations were concluded to originate primarily from the heterogeneity of the interfacial electronic barrier height with an additional small contribution from random changes in the tip-contact geometry.

  2. Interplanetary Type IV Bursts

    Science.gov (United States)

    Hillaris, A.; Bouratzis, C.; Nindos, A.

    2016-08-01

    We study the characteristics of moving type IV radio bursts that extend to hectometric wavelengths (interplanetary type IV or type {IV}_{{IP}} bursts) and their relationship with energetic phenomena on the Sun. Our dataset comprises 48 interplanetary type IV bursts observed with the Radio and Plasma Wave Investigation (WAVES) instrument onboard Wind in the 13.825 MHz - 20 kHz frequency range. The dynamic spectra of the Radio Solar Telescope Network (RSTN), the Nançay Decametric Array (DAM), the Appareil de Routine pour le Traitement et l' Enregistrement Magnetique de l' Information Spectral (ARTEMIS-IV), the Culgoora, Hiraso, and the Institute of Terrestrial Magnetism, Ionosphere and Radio Wave Propagation (IZMIRAN) Radio Spectrographs were used to track the evolution of the events in the low corona. These were supplemented with soft X-ray (SXR) flux-measurements from the Geostationary Operational Environmental Satellite (GOES) and coronal mass ejections (CME) data from the Large Angle and Spectroscopic Coronagraph (LASCO) onboard the Solar and Heliospheric Observatory (SOHO). Positional information of the coronal bursts was obtained by the Nançay Radioheliograph (NRH). We examined the relationship of the type IV events with coronal radio bursts, CMEs, and SXR flares. The majority of the events (45) were characterized as compact, their duration was on average 106 minutes. This type of events was, mostly, associated with M- and X-class flares (40 out of 45) and fast CMEs, 32 of these events had CMEs faster than 1000 km s^{-1}. Furthermore, in 43 compact events the CME was possibly subjected to reduced aerodynamic drag as it was propagating in the wake of a previous CME. A minority (three) of long-lived type {IV}_{{IP}} bursts was detected, with durations from 960 minutes to 115 hours. These events are referred to as extended or long duration and appear to replenish their energetic electron content, possibly from electrons escaping from the corresponding coronal

  3. Two-phase characteristics of the feeding fluid of Cerro Prieto IV wells (Mexico) obtained by gas equilibrium; Caracteristicas bifasicas del fluido de alimentacion de pozos de Cerro Prieto IV (Mexico), obtenidas por equilibrio gaseoso

    Energy Technology Data Exchange (ETDEWEB)

    Barragan-Reyes, Rosa Maria; Arellano-Gomez, Victor Manuel; Portugal-Marin, Enrique [Instituto de Investigaciones Electricas (Mexico); De Leon-Vivar, Jesus [Comision Federal de Electricidad, Residencia General de Cerro Prieto, B.C (Mexico)

    2008-10-15

    The gas composition of fluids produced by CP IV geothermal wells from the Cerro Prieto field was studied in order to identify different types of fluids entering the wells by estimating their temperature and excess steam. A method based on the Fischer Tropsch reaction and H2S equilibrium with pyrite-pyrrhotite as mineral buffer (FTHSH3) was used. The results for the reservoir natural state indicated the presence of fluids with heterogeneous reservoir temperature (between 275 and 310 degrees Celsius) and excess steam values, which were found from negative (boiled liquid that has lost steam when flowing to the well) to one (steam phase with zero liquid saturation). The study for individual wells in which boiling processes were identified, showed that through time, the feeding fluids consist of a two-phase mixture with different liquid/steam proportions. Also, the results suggested that a steam phase could occur at CP IV which is added to the feeding fluid, depending on the operation conditions of the wells. The origin of this steam could be the boiling of the deeper liquid due to a pressure drop. [Spanish] Se estudio la composicion gaseosa de los fluidos producidos por pozos geotermicos del sector CP IV del campo de Cerro Prieto para tratar de distinguir aportes de fluidos diferentes mediante la estimacion de su temperatura de yacimiento y del exceso de vapor. Se utilizo un metodo de equilibrio gaseoso basado en la reaccion de Fischer Tropsch y el equilibrio combinado pirita-pirrotita (FT-HSH3). Los resultados obtenidos indican que en el estado inicial del yacimiento existen fluidos que muestran heterogeneidad en los valores de temperatura de yacimiento (entre 275 y 310 grados Celsius), asi como en el exceso de vapor con valores desde negativos (liquido que despues de ebullir ha perdido vapor en su trayecto hacia el pozo) hasta uno (vapor con cero saturacion de liquido). El estudio individual de los pozos con fenomenos de ebullicion muestra que a traves del tiempo

  4. Temperature dependent electrical characteristics of an organic-inorganic heterojunction obtained from a novel organometal Mn complex

    Energy Technology Data Exchange (ETDEWEB)

    Ocak, Y.S., E-mail: yusufselim@gmail.co [Department of Science, Faculty of Education, University of Dicle, Diyarbakir (Turkey); Ebeoglu, M.A. [Department of Electrical and Electronics Engineering, Faculty of Engineering, University of Dumlupinar, Kutahya (Turkey); Topal, G. [Department of Chemistry, Faculty of Education, University of Dicle, Diyarbakir (Turkey); Kilicoglu, T., E-mail: tahsin@dicle.edu.t [Department of Physics, Faculty of Art and Science, University of Dicle, Diyarbakir (Turkey); Department of Physics, Faculty of Art and Science, University of Batman, Batman (Turkey)

    2010-05-01

    This study includes synthesizing a Mn hexaamide (MnHA) organometal compound (C{sub 27}H{sub 21}N{sub 9}O{sub 6}MnCl{sub 2}).(1/2H{sub 2}O), fabrication of MnHA/n-Si organic-inorganic heterojunction and analysis of conduction mechanism of the device over the room temperature. After synthesizing the molecule, the structure of the compound was determined using spectroscopic methods. The Sn/MnHA/n-Si structure was constructed by forming a thin MnHA layer on n-Si inorganic semiconductor and evaporating Sn metal on organic complex. The structure has shown good rectifying behavior and obeys the thermionic emission theory. The current-voltage (I-V) characteristics of the diode have been measured at temperatures ranging from 300 to 380 K at 10 K intervals to determine the temperature dependent electrical characteristics of the device.

  5. Comparative study of Cu(In,Ga)Se{sub 2}/(PVD)In{sub 2}S{sub 3} and Cu(In,Ga)Se{sub 2}/(CBD)CdS heterojunction based solar cells by admittance spectroscopy, current-voltage and spectral response measurements

    Energy Technology Data Exchange (ETDEWEB)

    Darga, A. [Laboratoire de Genie Electrique de Paris, CNRS UMR8507, SUPELEC, UPMC Univ Paris 06, Univ Paris-Sud, 11 rue Joliot-Curie, Plateau de Moulon, F-91192 Gif-sur-Yvette Cedex (France)], E-mail: arouna.darga@lgep.supelec.fr; Mencaraglia, D.; Djebbour, Z.; Dubois, A. Migan; Chouffot, R.; Serhan, J. [Laboratoire de Genie Electrique de Paris, CNRS UMR8507, SUPELEC, UPMC Univ Paris 06, Univ Paris-Sud, 11 rue Joliot-Curie, Plateau de Moulon, F-91192 Gif-sur-Yvette Cedex (France); Couzinie-Devy, F.; Barreau, N.; Kessler, J. [Institut des Materiaux Jean Rouxel (IMN)-UMR 6502, Universite de Nantes, CNRS, 2 rue de la Houssiniere, BP 32229, 44322 Nantes cedex 3 (France)

    2009-02-02

    Co-evaporated Cu(In,Ga)Se{sub 2} (CIGSe) based solar cells with Physical Vapour Deposited (PVD) Indium Sulphide (In{sub 2}S{sub 3}) as buffer layer have been studied by admittance spectroscopy and current-voltage characteristics measurements. The results have been compared to those obtained with a reference CBD-CdS/CIGSe device. In darkness, the PVD-In{sub 2}S{sub 3} buffer layer devices exhibit higher densities of trapping defects and low values of shunt resistance. However, under illumination we have observed an important improvement of the In{sub 2}S{sub 3}/CIGSe electronic transport properties. This behavior seems to be linked to the presence of a metastable defect with activation energy of 0.3 eV.

  6. Double exponential I-V characteristics and double Gaussian distribution of barrier heights in (Au/Ti)/Al2O3/ n-GaAs (MIS)-type Schottky barrier diodes in wide temperature range

    Science.gov (United States)

    Güçlü, Çiğdem Ş.; Özdemir, Ahmet Faruk; Altindal, Şemsettin

    2016-12-01

    In this study, current conduction mechanisms of the sample (Au/Ti)/Al2O3/ n-GaAs were investigated in detail using current-voltage (I-V) measurements in the temperature range of 80-380 K. The semilogarithmic I-V plots reveal two distinct linear regions with different slopes between 0.07-0.30 and 0.30-0.69 V which are called as Region I (RI) and Region II (RII), respectively. The ideality factor ( n) and zero-bias barrier height (Φ_{{bo}}) were found to be strong functions of temperature and voltage. In both regions, as the temperature increases, Φ_{{bo}} increases, whereas the value of n decreases. The high value of n at low temperatures is an evidence of deviation from thermionic emission, and it cannot be explained solely by tunneling mechanism, the existence of surface states and interfacial layer. Therefore, the Φ_{{bo}} versus q/kT plots were drawn for two linear regions of lnI-V plots, and these plots also revealed two distinct linear regions with different slopes between two temperature regions of 80-170 and 200-380 K which are called as low- and high-temperature range (LTR and HTR), respectively. Such behavior of these plots confirmed the existence of double Gaussian distribution (DGD) in the samples which in turn has mean barrier heights bar{Φ}_{{bo}} and standard deviations ( σ s). These values were obtained from the intercept and slope of these plots as 0.38 eV and 0.061 V for LTR and as 0.88 eV and 0.142 V for HTR (in RI), whereas they were obtained as 0.37 eV and 0.061 V for LTR and as 0.92 eV and 0.148 V for HTR (in RII), respectively. Thus, the modified ln( I s/ T 2)- q 2 σ s 2 /2 k 2 T 2 versus q/ kT plots were drawn, and the values of (bar{Φ}_{{bo}}) and effective Richardson constant ( A *) were extracted from the intercept and slope of these plots as 0.39 eV and 7.07 A/cm2 K2 for LTR and as 0.92 eV and 8.158 A/cm2 K2 for HTR (in RI), whereas they were extracted as 0.38 eV and 7.92 A/cm2 K2 for LTR and as 0.94 eV and 4.66 A/cm2 K2 for HTR

  7. Prediction of Supersonic Store Separation Characteristics Including Fuselage and Stores of Noncircular Cross Section, Volume IV. Appendices C and D, Details of Program II.

    Science.gov (United States)

    1980-11-01

    VOLUME IV - APPENDICES C AND D, DETAILS OF PROGRAM II Joseph Mullen, Jr. Frederick K. Goodwin Marnix F. E. Dillenius Nielsen Engineering & Research...location in store source panel coordinates of leading edge of wing, feet RAZ semi-axis in vertical direction of elliptic body, feet RBY semi-axis in

  8. Detecting loss mechanisms of c-Si PV modules in-situ I-V measurement

    Science.gov (United States)

    Guo, Siyu; Schneller, Eric; Walters, Joe; Davis, Kristopher O.; Schoenfeld, Winston V.

    2016-09-01

    PV module reliability is alsways an important issue for PV industry. In an outdoor PV system, PV modules suffer from degradation due to different factors. It is then very important to determine the loss mechanisms of a PV module and making improvement based on this. It is found in this work that due to mismatch effect, using fitting method to extract I-V characteristics might not be well applied on a PV module, especially when it has non-uniform degradation problem. This work proposes a method to accurately quantify the power loss of PV modules due to different degradation mechanisms, including series resistance (Rs) loss, non-uniform shunting loss and number of shunted cells, uniform shunting loss, uniform current loss, non-uniform current (mismatch) loss, recombination current (J01 and J02) losses of a PV module. All required input information are the measured current-voltage (I-V) curves and short circuit current- open circuit voltage (Isc-Voc) of PV module initial state and final state. The method is first applied to a simulated PV module with various degradation problems. Power loss due to each loss mechanism for the simulated PV module is then extracted using the proposed method and a pie chart can be generated. Comparing with the actual power loss on each loss mechanism, the method proposed in this work is proved to be very accurate. The method is then further applied to a degradated PV module istalled in an outdoor PV system. The power loss on series resistance, shunting and current mismatch are effectively identified and the number of shunted cells is accurately calculated. In the real application, this method can be used in both indoor and outdoor characterization, which can be very beneficial for PV degradation analysis of PV modules and systems.

  9. The Annealing Effects of ZnO Thin Films on Characteristic Parameters of Au/ZnO Schottky Contacts on n-Si

    Directory of Open Access Journals (Sweden)

    A. Toprak

    2012-03-01

    Full Text Available 200 nm ZnO thin films have been grown on n type Silicon substrates by DC sputtering technique. One of the thin films has been annealed at 300 ºC for 45 minutes. The Au front contacts on ZnO thin films have been formed by evaporation of Au metal by means of shadow mask. It has been seen that the rectification ratio of Au/ZnO device obtained using annealed ZnO thin film is higher than the one obtained using unannealed ZnO thin film. The characteristic parameters of Au/ZnO junctions such as ideality factor, barrier height and series resistance obtained by current-voltage (I-V measurements of the structures at room temperature and in dark have been compared with each others. 200 nm ZnO thin films have been grown on n type Silicon substrates by DC sputtering technique. One of the thin films has been annealed at 300 ºC for 45 minutes. The Au front contacts on ZnO thin films have been formed by evaporation of Au metal by means of shadow mask. It has been seen that the rectification ratio of Au/ZnO device obtained using annealed ZnO thin film is higher than the one obtained using unannealed ZnO thin film. The characteristic parameters of Au/ZnO junctions such as ideality factor, barrier height and series resistance obtained by current-voltage (I-V measurements of the structures at room temperature and in dark have been compared with each others. 200 nm ZnO thin films have been grown on n type Silicon substrates by DC sputtering technique. One of the thin films has been annealed at 300 ºC for 45 minutes. The Au front contacts on ZnO thin films have been formed by evaporation of Au metal by means of shadow mask. It has been seen that the rectification ratio of Au/ZnO device obtained using annealed ZnO thin film is higher than the one obtained using unannealed ZnO thin film. The characteristic parameters of Au/ZnO junctions such as ideality factor, barrier height and series resistance obtained by current-voltage (I-V measurements of the structures at

  10. A Deep Search for Faint Galaxies Associated with Very Low-Redshift C IV Absorbers: A Case with Cold-Accretion Characteristics

    CERN Document Server

    Burchett, Joseph N; Werk, Jessica K; Howk, J Christopher; Prochaska, J Xavier; Ford, Amanda Brady; Davé, Romeel

    2013-01-01

    Studies of QSO absorber-galaxy connections are often hindered by inadequate information on whether faint/dwarf galaxies are located near the QSO sight lines. To investigate the contribution of faint galaxies to QSO absorber populations, we are conducting a deep galaxy redshift survey near low-z C IV absorbers. Here we report a blindly-detected C IV absorption system (z(abs) = 0.00348) in the spectrum of PG1148+549 that appears to be associated either with an edge-on dwarf galaxy with an obvious disk (UGC 6894, z(gal) = 0.00283) at an impact parameter of rho = 190 kpc or with a very faint dwarf irregular galaxy at rho = 23 kpc, which is closer to the sightline but has a larger redshift difference (z(gal) = 0.00107, i.e., dv = 724 km/s). We consider various gas/galaxy associations, including infall and outflows. Based on current theoretical models, we conclude that the absorber is most likely tracing (1) the remnants of an outflow from a previous epoch, a so-called 'ancient outflow', or (2) intergalactic gas ac...

  11. Poly(3-hexylthiophene)/multiwalled carbon hybrid coaxial nanotubes: nanoscale rectification and photovoltaic characteristics.

    Science.gov (United States)

    Kim, Kihyun; Shin, Ji Won; Lee, Yong Baek; Cho, Mi Yeon; Lee, Suk Ho; Park, Dong Hyuk; Jang, Dong Kyu; Lee, Cheol Jin; Joo, Jinsoo

    2010-07-27

    We fabricate hybrid coaxial nanotubes (NTs) of multiwalled carbon nanotubes (MWCNTs) coated with light-emitting poly(3-hexylthiophene) (P3HT). The p-type P3HT material with a thickness of approximately 20 nm is electrochemically deposited onto the surface of the MWCNT. The formation of hybrid coaxial NTs of the P3HT/MWCNT is confirmed by a transmission electron microscope, FT-IR, and Raman spectra. The optical and structural properties of the hybrid NTs are characterized using ultraviolet and visible absorption, Raman, and photoluminescence (PL) spectra where, it is shown that the PL intensity of the P3HT materials decreases after the hybridization with the MWCNTs. The current-voltage (I-V) characteristics of the outer P3HT single NT show the semiconducting behavior, while ohmic behavior is observed for the inner single MWCNT. The I-V characteristics of the hybrid junction between the outer P3HT NT and the inner MWCNT, for the hybrid single NT, exhibit the characteristics of a diode (i.e., rectification), whose efficiency is clearly enhanced with light irradiation. The rectification effect of the hybrid single NT has been analyzed in terms of charge tunneling models. The quasi-photovoltaic effect is also observed at low bias for the P3HT/MWCNT hybrid single NT.

  12. Schottky barrier parameters and low frequency noise characteristics of graphene-germanium Schottky barrier diode

    Science.gov (United States)

    Khurelbaatar, Zagarzusem; Kil, Yeon-Ho; Shim, Kyu-Hwan; Cho, Hyunjin; Kim, Myung-Jong; Lee, Sung-Nam; Jeong, Jae-chan; Hong, Hyobong; Choi, Chel-Jong

    2016-03-01

    We investigated the electrical properties of chemical vapor deposition-grown monolayer graphene/n-type germanium (Ge) Schottky barrier diodes (SBD) using current-voltage (I-V) characteristics and low frequency noise measurements. The Schottky barrier parameters of graphene/n-type Ge SBDs, such as Schottky barrier height (VB), ideality factor (n), and series resistance (Rs), were extracted using the forward I-V and Cheung's methods. The VB and n extracted from the forward ln(I)-V plot were found to be 0.63 eV and 1.78, respectively. In contrast, from Cheung method, the VB and n were calculated to be 0.53 eV and 1.76, respectively. Such a discrepancy between the values of VB calculated from the forward I-V and Cheung's methods indicated a deviation from the ideal thermionic emission of graphene/n-type Ge SBD associated with the voltage drop across graphene. The low frequency noise measurements performed at the frequencies in the range of 10 Hz-1 kHz showed that the graphene/n-type Ge SBD had 1/f γ frequency dependence, with γ ranging from 1.09 to 1.12, regardless of applied forward biases. Similar to forward-biased SBDs operating in the thermionic emission mode, the current noise power spectral density of graphene/n-type Ge SBD was linearly proportional to the forward current.

  13. A DEEP SEARCH FOR FAINT GALAXIES ASSOCIATED WITH VERY LOW-REDSHIFT C IV ABSORBERS: A CASE WITH COLD-ACCRETION CHARACTERISTICS

    Energy Technology Data Exchange (ETDEWEB)

    Burchett, Joseph N.; Tripp, Todd M. [Department of Astronomy, University of Massachusetts, 710 North Pleasant Street, Amherst, MA 01003-9305 (United States); Werk, Jessica K.; Prochaska, J. Xavier [UCO/Lick Observatory, University of California, Santa Cruz, CA 95140 (United States); Howk, J. Christopher [Department of Physics, University of Notre Dame, Notre Dame, IN 46556 (United States); Ford, Amanda Brady [Astronomy Department, University of Arizona, Tucson, AZ 85721 (United States); Davé, Romeel, E-mail: jburchet@astro.umass.edu [University of the Western Cape, Bellville, Cape Town 7535 (South Africa)

    2013-12-20

    Studies of QSO absorber-galaxy connections are often hindered by inadequate information on whether faint/dwarf galaxies are located near the QSO sight lines. To investigate the contribution of faint galaxies to QSO absorber populations, we are conducting a deep galaxy redshift survey near low-z C IV absorbers. Here we report a blindly detected C IV absorption system (z {sub abs} = 0.00348) in the spectrum of PG1148+549 that appears to be associated either with an edge-on dwarf galaxy with an obvious disk (UGC 6894, z {sub gal} = 0.00283) at an impact parameter of ρ = 190 kpc or with a very faint dwarf irregular galaxy at ρ = 23 kpc, which is closer to the sightline but has a larger redshift difference (z {sub gal} = 0.00107, i.e., δv = 724 km s{sup –1}). We consider various gas/galaxy associations, including infall and outflows. Based on current theoretical models, we conclude that the absorber is most likely tracing (1) the remnants of an outflow from a previous epoch, a so-called {sup a}ncient outflow{sup ,} or (2) intergalactic gas accreting onto UGC 6894, ''cold mode'' accretion. The latter scenario is supported by H I synthesis imaging data that shows the rotation curve of the disk being codirectional with the velocity offset between UGC 6894 and the absorber, which is located almost directly along the major axis of the edge-on disk.

  14. Preliminary evaluation of the air and fuel specific-impulse characteristics of several potential ram-jet fuels IV : hydrogen, a-methylnaphthalene, and carbon / Benson E. Gammon

    Science.gov (United States)

    Gammon, Benson E

    1951-01-01

    A preliminary analytical evaluation of the air and fuel specific-impulse characteristics of hydrogen, a-methylnapthalene, and graphite carbon has been made. Adiabatic constant-pressure combustion flame temperatures for each fuel at several equivalence ratios were calculated for an initial air temperature of 560 degrees R and a pressure of 2 atmospheres.

  15. Electrical and photovoltaic characteristics of sodium copper chlorophyllin/n-type silicon heterojunctions

    Energy Technology Data Exchange (ETDEWEB)

    Farag, A.A.M., E-mail: alaafaragg@yahoo.com [Thin Film Laboratory, Physics Department, Faculty of Education, Ain Shams University, Cairo (Egypt)

    2009-02-15

    Heterojunctions of p-type sodium copper chlorophyllin (p-SCC)/n-type silicon (n-Si) were prepared by deposition of p-SCC film on n-Si wafers using spray-pyrolysis technique. Current-voltage and capacitance-voltage measurements of Au/p-SCC/n-Si/In heterojunctions were performed to discuss the electrical properties of these heterostructures. Rectifying characteristics were observed, which are definitely of the diode type. The current-voltage measurements suggest that the forward current in these junctions involves tunnelling and the results showed that the forward current can be explained by a multi-tunnelling capture-emission model in which the electron emission process dominates the carrier transport mechanism. On the other hand, the reverse current is probably limited by the same conduction process. The capacitance-voltage behavior indicates an abrupt heterojunction model is valid for Au/p-SCC/n-Si/In heterojunctions and the junction parameters such as, built-in potential, V{sub D}, carrier concentration, N, the width of depletion layer, W, were obtained. The temperature and frequency dependence of the measured capacitance were also studied. The loaded I-V characteristics under white illumination provided by tungsten lamp (80 mW/cm{sup 2}) give values of 400 mV, 0.9 mA, 0.38 and 1.7% for the open-circuit voltage, V{sub oc}, the short-circuit current, I{sub sc}, the fill factor, FF, and conversion efficiency, {eta}, respectively.

  16. Enhanced Magnetic and Ferroelectric Properties and Current-Voltage Hysteresis by Addition of La and Ti to BiFeO3 on 0.7%Nb-SrTiO3

    Institute of Scientific and Technical Information of China (English)

    CHANG Hong; ZHAO Yong-Gang

    2011-01-01

    By adding La and Ti, we improve the magnetic and ferroelectric properties of BiQ.sLa0.2Feo.g2Ti0.08O3 and Bio.sLa0.2FeO3 Rims on 0.7%Nb-SrTiO3. In Bio.8La0.2Feo.92Ti0.08O3 and Bio.sLa0.2FeOa, the saturation magnetization and the coercivity are several times higher than those in BiFeO3. The La and Ti additions reduce the leakage current, and increase the remnant electric polarization. A resistance switching is observed in Bio.8Lao.2Feo.92Tio.o803/0.7%Nb-SrTi03 and Bi0.8La0.2FeO3/0.7%Nb-SrTiO3 interfaces. Also, it is observed that Bio.sLao.2Feo.92 Ti0.08O3/0.7%Nb-SrTiO3 has a wider current-voltage hysteresis and a larger resistance difference than Bi0.sLao.2Fe03/0.7%Nb-SrTi03. In the interface of Bi0.8Lao.2Fe0.92Ti0.08 O3/0.7%JVb-SrTiO3, the ratio of high to low resistance is 103 and 105 times, at 300K and 10 K, respectively. The voltage pulses can switch the resistance to vary in the 2 states. The transport mechanisms show that a trap-controlled space-charge-limited current induces current-voltage hysteresis and resistance switching. The current of Bio.8Lao.2Feo.g2 Tio.os O3/0.7%Nb-SrTiO3 decays with the Curie-Von Schweidler law.%@@ By adding La and Ti, we improve the magnetic and ferroelectric properties of BiLaFeTiO and BiLaFeO films on 0.7%Nb-SrTiO.In BiLaFeTiO and BiLaFeO, the saturation mag- netization and the coercivity are several times higher than those in BiFeO.The La and Ti additions re- duce the leakage current, and increase the remnant electric polarization.A resistance switching is observed in BiLaFe TiO/0.7%Nb-SrTiO and BiLaFeO/0.7%Nb-SrTiO interfaces.Also, it is observed that BiLaFe TiO/0.7%Nb-SrTiO has a wider current-voltage hysteresis and a larger resistance differ- ence than BiLaFeO/0.7%Nb-SrTiO.In the interface of BiLaFeTiO/0.7%Nb-SrTiO, the ratio of high to low resistance is 10 and 10 times, at 300 K and 10K, respectively.The voltage pulses can switch the resistance to vary in the 2 states.The transport mechanisms show that a trap

  17. Hydraulic demand characteristics of self-supported C-IV-N and K-I-N I&E fuel elements in a zirconium C-Reactor tube

    Energy Technology Data Exchange (ETDEWEB)

    Waters, E.D.

    1960-01-13

    This report discusses the isothermal hydraulic demand characteristics were determined by laboratory experiment for full charges of self-supported I&E fuel elements in a zirconium process tube. Pressure drop, flow rate data, and the calculations of annulus-to-hole flow ratio are presented. For self-supported fuel elements, pressure drop does not vary with temperature as much as it dies for non-self-supported furl elements.

  18. Maximum Power Point tracking algorithm based on I-V characteristic of PV array under uniform and non-uniform conditions

    DEFF Research Database (Denmark)

    Kouchaki, Alireza; Iman-Eini, H.; Asaei, B.

    2012-01-01

    This paper presents a new algorithm based on characteristic equation of solar cells to determine the Maximum Power Point (MPP) of PV modules under partially shaded conditions (PSC). To achieve this goal, an analytic condition is introduced to determine uniform or non-uniform atmospheric condition...... to verify the accuracy and validity of the proposed method, different simulations are carried out in MATLAB-Simulink environment for various atmospheric conditions. © 2012 IEEE....

  19. Performance characteristics of CdTe drift ring detector

    Science.gov (United States)

    Alruhaili, A.; Sellin, P. J.; Lohstroh, A.; Veeramani, P.; Kazemi, S.; Veale, M. C.; Sawhney, K. J. S.; Kachkanov, V.

    2014-03-01

    CdTe and CdZnTe material is an excellent candidate for the fabrication of high energy X-ray spectroscopic detectors due to their good quantum efficiency and room temperature operation. The main material limitation is associated with the poor charge transport properties of holes. The motivation of this work is to investigate the performance characteristics of a detector fabricated with a drift ring geometry that is insensitive to the transport of holes. The performance of a prototype Ohmic CdTe drift ring detector fabricated by Acrorad with 3 drift rings is reported; measurements include room temperature current voltage characteristics (IV) and spectroscopic performance. The data shows that the energy resolution of the detector is limited by leakage current which is a combination of bulk and surface leakage currents. The energy resolution was studied as a function of incident X-ray position with an X-ray microbeam at the Diamond Light Source. Different ring biasing schemes were investigated and the results show that by increasing the lateral field (i.e. the bias gradient across the rings) the active area, evaluated by the detected count rate, increased significantly.

  20. Dependence of Characteristic Diode Parameters in Ni/n-GaAs Contacts on Thermal Annealing and Sample Temperature

    Science.gov (United States)

    Yildirim, N.; Dogan, H.; Korkut, H.; Turut, A.

    We have prepared the sputtered Ni/n-GaAs Schottky diodes which consist of as-deposited, and diodes annealed at 200 and 400°C for 2 min. The effect of thermal annealing on the temperature-dependent current-voltage (I-V) characteristics of the diodes has been experimentally investigated. Their I-V characteristics have been measured in the temperature range of 60-320 K with steps of 20 K. It has been seen that the barrier height (BH) slightly increased from 0.84 (as-deposited sample) to 0.88 eV at 300 K when the contact has been annealed at 400°C. The SBH increased whereas the ideality factor decreased with increasing annealing temperature for each sample temperature. The I-V measurements showed a dependence of ideality factor n and BH on the measuring temperature that cannot be explained by the classical thermionic emission theory. The experimental data are consistent with the presence of an inhomogeneity of the SBHs. Therefore, the temperature dependent I-V characteristics of the diodes have been discussed in terms of the multi-Gaussian distribution model. The experimental data good have agree with the fitting curves over whole measurement temperature range indicating that the SBH inhomogeneity of our as-deposited and annealed Ni/n-GaAs SBDs can be well-described by a double-Gaussian distribution. The slope of the nT versus T plot for the samples has approached to unity with increasing annealing temperature and becomes parallel to that of the ideal Schottky contact behavior for the 400°C annealed diode. Thus, it has been concluded that the thermal annealing process translates the metal-semiconductor contacts into thermally stable Schottky contacts.

  1. Influence of Ce(III/Ce(IV - supplements on the Characteristics of Humidity Sensors with TiO2 Films Prepared via a Sol-gel Method

    Directory of Open Access Journals (Sweden)

    Kozhukharov, S.

    2013-04-01

    Full Text Available Humidity sensors have been prepared via a sol-gel method to deposit TiO2 films with additions of Ce-compounds on alumina substrates, with interdigitated silver palladium electrodes. Observations by scanning electron microscopy (SEM were performed in order to determine the surface morphology of the respective layers. Structural and compositional characterization was done by X-ray diffraction analysis (XRD, and energy dispersive X-ray spectroscopy (EDX for investigation of the relation between the film structures and the parameters of the respective sensors. The influence of Ce-compounds on the electrical characteristics of the samples as humidity sensing elements has been evaluated by an impedance analyzer.Los sensores de humedad han sido desarrollados mediante el método sol-gel para depositar películas superficiales basadas en TiO2 con adiciones de compuestos de cerio sobre sustratos de corindón y electrodos de aleación de plata y paladio. Se han realizado observaciones mediante el Microscopio Electrónico de Barrido (MEB para determinar la morfología superficial de las capas respectivas. Las caracterizaciones de la estructura y composición han sido realizadas mediante Difracción de Rayos X (DRX y espectroscopía de dispersión energética de rayos X (EDERX, con el fin de investigar la relación entre la estructura de las capas y los parámetros de los sensores respectivos. La influencia de los compuestos de cerio sobre las características eléctricas de los sensores de humedad obtenidos se ha evaluado mediante el análisis de impedancia eléctrica.

  2. Characterization of AlN/AlGaN/GaN:C heterostructures grown on Si(111) using atom probe tomography, secondary ion mass spectrometry, and vertical current-voltage measurements

    Energy Technology Data Exchange (ETDEWEB)

    Huber, Martin, E-mail: martin.huberVIH@infineon.com [Infineon Technologies Austria AG, Siemensstrasse 2, A-9500 Villach, Austria and Institute of Semiconductor and Solid State Physics, Johannes Kepler University, Altenbergerstrasse 69, A-4040 Linz (Austria); Daumiller, Ingo; Andreev, Andrei; Silvestri, Marco; Knuuttila, Lauri; Lundskog, Anders [Infineon Technologies Austria AG, Siemensstrasse 2, A-9500 Villach (Austria); Wahl, Michael; Kopnarski, Michael [IFOS Institut fuer Oberflaechen- und Schichtanalytik GmbH, Trippstadter Strasse 120, D-67663 Kaiserslautern (Germany); Bonanni, Alberta [Institute of Semiconductor and Solid State Physics, Johannes Kepler University, Altenbergerstrasse 69, A-4040 Linz (Austria)

    2016-03-28

    Complementary studies of atom probe tomography, secondary ion mass spectrometry, and vertical current-voltage measurements are carried out in order to unravel the influence of C-doping of GaN on the vertical leakage current of AlN/AlGaN/GaN:C heterostructures. A systematic increment of the vertical blocking voltage at a given current density is observed in the structures, when moving from the nominally undoped conditions—corresponding to a residual C-background of ∼10{sup 17 }cm{sup −3}—to a C-content of ∼10{sup 19 }cm{sup −3} in the GaN layer. The value of the vertical blocking voltage saturates for C concentrations higher than ∼10{sup 19 }cm{sup −3}. Atom probe tomography confirms the homogeneity of the GaN:C layers, demonstrating that there is no clustering at C-concentrations as high as 10{sup 20 }cm{sup −3}. It is inferred that the vertical blocking voltage saturation is not likely to be related to C-clustering.

  3. A parameter-free method to extract the superconductor’s J c(B,θ) field-dependence from in-field current-voltage characteristics of high temperature superconductor tapes

    Science.gov (United States)

    Zermeño, Víctor M. R.; Habelok, Krzysztof; Stępień, Mariusz; Grilli, Francesco

    2017-03-01

    The estimation of the critical current (I c) and AC losses of high-temperature superconductor devices through modeling and simulation requires the knowledge of the critical current density (J c) of the superconducting material. This J c is in general not constant and depends both on the magnitude (B loc) and the direction (θ, relative to the tape) of the local magnetic flux density. In principle, J c(B loc,θ) can be obtained from the experimentally measured critical current I c(B a,θ), where B a is the magnitude of the applied magnetic field. However, for applications where the superconducting materials experience a local field that is close to the self-field of an isolated conductor, obtaining J c(B loc,θ) from I c(B a,θ) is not a trivial task. It is necessary to solve an inverse problem to correct for the contribution derived from the self-field. The methods presented in the literature comprise a series of approaches dealing with different degrees of mathematical regularization to fit the parameters of preconceived nonlinear formulas by means of brute force or optimization methods. In this contribution, we present a parameter-free method that provides excellent reproduction of experimental data and requires no human interaction or preconception of the J c dependence with respect to the magnetic field. In particular, it allows going from the experimental data to a ready-to-run J c(B loc,θ) model in a few minutes.

  4. Current-voltage characteristics of SnO{sub 2}-Co{sub 3}O{sub 4}-Cr{sub 2}O{sub 3}-Sb{sub 2}O{sub 5} ceramics

    Energy Technology Data Exchange (ETDEWEB)

    Aguilar-Martinez, J A [Centro de Investigacion en Materiales Avanzados, S.C. (CIMAV), Alianza Norte 202, Parque de Investigacion e Innovacion Tecnologica (PIIT), Nueva Carretera Aeropuerto km. 10, Apodaca, Nuevo Leon, CP 66600 (Mexico); Glot, A B [Posgrado, Universidad Tecnologica de la Mixteca, Carretera Acatlima Km. 2.5, Huajuapan de Leon, Oaxaca, CP 69000 (Mexico); Gaponov, A V [Department of Radioelectronics, Dniepropetrovsk National University, Dniepropetrovsk 49050 (Ukraine); Hernandez, M B [Instituto de Mineria, Universidad Tecnologica de la Mixteca, Carretera Acatlima Km. 2.5, Huajuapan de Leon, Oaxaca, CP 69000 (Mexico); Guerrero-Paz, J, E-mail: josue.aguilar@cimav.edu.m [Particulate Materials Lab, Universidad Autonoma del Estado de Hidalgo, Pachuca, CP 42184 (Mexico)

    2009-10-21

    The effect of mechanical treatment in a planetary mill on the microstructure and electrical properties of tin dioxide based varistor ceramics in the system SnO{sub 2}-Co{sub 3}O{sub 4}-Cr{sub 2}O{sub 3}-Sb{sub 2}O{sub 5} sintered in the range 1150-1450 {sup 0}C was studied. The mechanical treatment leads to an increase in shrinkage, decrease in porosity, decrease in sample diameter, change in colour of the sintered samples from grey to black and enhancement of nonlinearity. For the sample sintered at 1350 {sup 0}C the mechanical treatment enhances the nonlinearity coefficient from 11 to 31 and decreases the electric field E{sub 1} (at 10{sup -3} A cm{sup -2}) from 3500 to 2800 V cm{sup -1}. The observed changes in physical properties are explained in terms of an additional size reduction of oxide particles and a better mixing of oxide powder followed by the formation of potential barriers at the grain boundaries throughout the whole sample. In spite of the low porosity, the low-field electrical conductivity of mechanically treated ceramics is significantly increased with the growth of relative humidity. A higher humidity sensitivity is found for mechanically treated ceramics with higher barrier height and higher nonlinearity coefficient.

  5. Using of the Form Characteristics in Determining the Genre of Archival Records Arşiv Belgelerinin Türünün Belirlenmesinde Form Özelliklerinin Kullanılması

    Directory of Open Access Journals (Sweden)

    Niyazi Çiçek

    2005-12-01

    Full Text Available Record genre is one of the descriptive felds that is used in the process of describing archival records. Today, in archival applications the genre of a record is generally limited to the medium, such as the records being on paper, electronic records or microform. Describing the genre correctly helps users and archivists to understand the functions and characteristics of records. However, this research shows that there are more terms related to the records production that can be used to describe the genre of a record. The main purpose of this essay is to suggest that the content of the records be the decisive element in describing type. Arşiv belgeleri tanımlanırken kullanılan niteleme alanlarından biri de belge türüdür. Günümüzde arşiv uygulamalarında belgelerin kağıt, elektronik evrak ya da mikrofilm gibi çoğu kez bulunduğu ortama göre türlere ayrıldığı görülmektedir. Oysa, tür doğru tanımlandığında hem kullanıcıya hem de arşivciye belgenin fonksiyonuyla birlikte yapısal özellikleri hakkında bilgi verir. Bu yüzden türe karar verilirken belgelerin biçimsel taraflarına mı yoksa içerikle birlikte form özelliklerini de yansıtan karakteristik yapılarına mı bakılması gerektiği öncelikli olarak çözülmesi gereken bir sorundur. Bu makalede karakteristik özelliklerin esas alınması gerektiği savunulmuştur.

  6. NNDSS - Table IV. Tuberculosis

    Data.gov (United States)

    U.S. Department of Health & Human Services — NNDSS - Table IV. Tuberculosis - 2014.This Table includes total number of cases reported in the United States, by region and by states, in accordance with the...

  7. NNDSS - Table IV. Tuberculosis

    Data.gov (United States)

    U.S. Department of Health & Human Services — NNDSS - Table IV. Tuberculosis - 2016.This Table includes total number of cases reported in the United States, by region and by states, in accordance with the...

  8. NNDSS - Table IV. Tuberculosis

    Data.gov (United States)

    U.S. Department of Health & Human Services — NNDSS - Table IV. Tuberculosis - 2015.This Table includes total number of cases reported in the United States, by region and by states, in accordance with the...

  9. pH-Sensing Characteristics of Hydrothermal Al-Doped ZnO Nanostructures

    Directory of Open Access Journals (Sweden)

    Jyh-Liang Wang

    2013-01-01

    Full Text Available Highly sensitive and stable pH-sensing properties of an extended-gate field-effect transistor (EGFET based on the aluminum-doped ZnO (AZO nanostructures have been demonstrated. The AZO nanostructures with different Al concentrations were synthesized on AZO/glass substrate via a simple hydrothermal growth method at 85°C. The AZO sensing nanostructures were connected with the metal-oxide-semiconductor field-effect transistor (MOSFET. Afterwards, the current-voltage (I-V characteristics and the sensing properties of the pH-EGFET sensors were obtained in different buffer solutions, respectively. As a result, the pH-sensing characteristics of AZO nanostructured pH-EGFET sensors with Al dosage of 3 at.% can exhibit the higher sensitivity of 57.95 mV/pH, the larger linearity of 0.9998, the smaller deviation of 0.023 in linearity, the lower drift rate of 1.27 mV/hour, and the lower threshold voltage of 1.32 V with a wider sensing range (pH 1 ~ pH 13. Hence, the outstanding stability and durability of AZO nanostructured ionic EGFET sensors are attractive for the electrochemical application of flexible and disposable biosensor.

  10. Nanoscale electrical and mechanical characteristics of conductive polyaniline network in polymer composite films.

    Science.gov (United States)

    Jafarzadeh, Shadi; Claesson, Per M; Sundell, Per-Erik; Pan, Jinshan; Thormann, Esben

    2014-11-12

    The presence and characteristics of a connected network of polyaniline (PANI) within a composite coating based on polyester acrylate (PEA) has been investigated. The bulk electrical conductivity of the composite was measured by impedance spectroscopy. It was found that the composite films containing PANI have an electrical conductivity level in the range of semiconductors (order of 10(-3) S cm(-1)), which suggests the presence of a connected network of the conductive phase. The nanoscopic distribution of such a network within the cured film was characterized by PeakForce tunneling atomic force microscopy (AFM). This method simultaneously provides local information about surface topography and nanomechanical properties, together with electrical conductivity arising from conductive paths connecting the metallic substrate to the surface of the coating. The data demonstrates that a PEA-rich layer exists at the composite-air interface, which hinders the conductive phase to be fully detected at the surface layer. However, by exposing the internal structure of the composites using a microtome, a much higher population of a conductive network of PANI, with higher elastic modulus than the PEA matrix, was observed and characterized. Local current-voltage (I-V) spectroscopy was utilized to investigate the conduction mechanism within the nanocomposite films, and revealed non-Ohmic characteristics of the conductive network.

  11. Tunnelling characteristics of Stone-Wales defects in monolayers of Sn and group-V elements

    Science.gov (United States)

    Jamdagni, Pooja; Kumar, Ashok; Thakur, Anil; Pandey, Ravindra; Ahluwalia, P. K.

    2017-10-01

    Topological defects in ultrathin layers are often formed during synthesis and processing, thereby strongly influencing the electronic properties of layered systems. For the monolayers of Sn and group-V elements, we report the results based on density functional theory determining the role of Stone-Wales (SW) defects in modifying their electronic properties. The calculated results find the electronic properties of the Sn monolayer to be strongly dependent on the concentration of SW defects, e.g. defective stanene has nearly zero band gap (≈0.03 eV) for the defect concentration of 2.2  ×  1013 cm-2 which opens up to 0.2 eV for the defect concentration of 3.7  ×  1013 cm-2. In contrast, SW defects appear to induce conduction states in the semiconducting monolayers of group-V elements. These conduction states act as channels for electron tunnelling, and the calculated tunnelling characteristics show the highest differential conductance for the negative bias with the asymmetric current-voltage characteristics. On the other hand, the highest differential conductance was found for the positive bias in stanene. Simulated STM topographical images of stanene and group-V monolayers show distinctly different features in terms of their cross-sectional views and distance-height profiles. These distinctive features can serve as fingerprints to identify the topological defects in experiments for the monolayers of group-IV and group-V elements.

  12. Junction formation and characteristics of CdS/CuInSe[sub 2]/metal interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Ashour, S. (Girls Coll., Science Branch, Riyadh (Saudi Arabia)); Alkuhaimi, S. (Girls Coll., Science Branch, Riyadh (Saudi Arabia)); Moutinho, H. (National Renewable Energy Lab., Golden, CO (United States)); Matson, R. (National Renewable Energy Lab., Golden, CO (United States)); Abou-Elfotouh, F. (National Renewable Energy Lab., Golden, CO (United States))

    1993-04-15

    Polycrystalline thin films of CuInSe[sub 2] (CIS) were prepared by galvanic electrochemical (EC) and physical vapor deposition (PVD) methods and were characterized using high resolution photoluminescence at low temperatures to study defect states, scanning electron microscopy to study surface morphology, and transmission electron microscopy to determine the grain size and individual crystallographic orientation of the grains for possible correlation between the properties of the two films. Metal contacts, Schottky devices in the form of Al/p-CIS, and CdS/p-CIS heterostructures were also prepared. The electrical properties of the resulting interfaces were investigated using current-voltage (I-V) and capacitance-voltage (C-V) characteristics, and by electron-beam-induced current measurements. Devices prepared from PVD films exhibited a higher generation factor G, sharp interfaces and the lowest density of interface states. On the contrary, devices of low G values (made from EC films) showed a much higher density of interface states with a high density of both shallow and deep traps, as detected by deep level transient spectroscopy. The results were used to correlate the resulting variation in the heterojunction characteristics and back contact behavior with the corresponding defect states dominating the CIS. (orig.)

  13. Analytic current-voltage relationship based on the unified mobility model for organic diodes%有机二极管基于通用迁移率模型的解析电流电压关系

    Institute of Scientific and Technical Information of China (English)

    王平; 孙久勋; 杨凯

    2011-01-01

    An analytical current-voltage relationship is proposed for single-carrier organic light emitting diodes. The model is based on the mobility model of Pasveer et al. [Phys. Rev. Lett. 94 (2005), 206601] that accounts for the most important physical quantities that influence the current transport in organic disordered semiconductors: temperature, carrier concentration, and electric field. The full-analytical formulation is obtained through replacing the constant mobility in Mott-Gurney relationship by the mobility model of Pasveer et al. With carrier concentration and electric field being replaced by their average values evaluated using the strict solutions at constant mobility, and leads to a simple analytical expression. It was validated with experimental data collected from different materials in a wide range of operating conditions.%提出一种有机半导体二极管电流电压关系的解析表达式.该表达式是基于Pasveer等人[Phys.Rev.Lett.94,206601 (2005)]的迁移率模型建立的,其中考虑了影响有机半导体载流子输运最重要的因素,包括温度、载流子浓度和电场强度.将Pasveer等人迁移率公式中的载流子浓度和电场强度用常数迁移率下严格解计算的平均值代入,然后将得到的迁移率取代Mott-Gurney电流电压关系中的常数迁移率从而得到解析电流电压表达式.将新解析表达式应用于三种材料制作的有机二极管,计算结果与实验数据符合很好,表明解析表达式是合理的.

  14. IV access in dental practice.

    LENUS (Irish Health Repository)

    Fitzpatrick, J J

    2009-04-01

    Intravenous (IV) access is a valuable skill for dental practitioners in emergency situations and in IV sedation. However, many people feel some apprehension about performing this procedure. This article explains the basic principles behind IV access, and the relevant anatomy and physiology, as well as giving a step-by-step guide to placing an IV cannula.

  15. Schottky barrier diode based on β-Ga2O3 (100) single crystal substrate and its temperature-dependent electrical characteristics

    Science.gov (United States)

    He, Qiming; Mu, Wenxiang; Dong, Hang; Long, Shibing; Jia, Zhitai; Lv, Hangbing; Liu, Qi; Tang, Minghua; Tao, Xutang; Liu, Ming

    2017-02-01

    The Pt/β-Ga2O3 Schottky barrier diode and its temperature-dependent current-voltage characteristics were investigated for power device application. The edge-defined film-fed growth (EFG) technique was utilized to grow the (100)-oriented β-Ga2O3 single crystal substrate that shows good crystal quality characterized by X-ray diffraction and high resolution transmission electron microscope. Ohmic and Schottky electrodes were fabricated by depositing Ti and Pt metals on the two surfaces, respectively. Through the current-voltage (I-V) measurement under different temperature and the thermionic emission modeling, the fabricated Pt/β-Ga2O3 Schottky diode was found to show good performances at room temperature, including rectification ratio of 1010, ideality factor (n) of 1.1, Schottky barrier height (ΦB) of 1.39 eV, threshold voltage (Vbi) of 1.07 V, ON-resistance (RON) of 12.5 mΩ.cm2, forward current density at 2 V (J@2V) of 56 A/cm2, and saturation current density (J0) of 2 × 10-16 A/cm2. The effective donor concentration Nd - Na was calculated to be about 2.3 × 1014 cm3. Good temperature dependent performance was also found in the device. The Schottky barrier height was estimated to be about 1.3 eV-1.39 eV at temperatures ranging from room temperature to 150 °C. With increasing temperature, parameters such as RON and J@2V become better, proving that the diode can work well at high temperature. The EFG grown β-Ga2O3 single crystal is a promising material to be used in the power devices.

  16. Dibromidodimethyldipyridineplatinum(IV

    Directory of Open Access Journals (Sweden)

    Mairéad E. Kelly

    2008-11-01

    Full Text Available In the title complex, [PtBr2(CH32(C5H5N2], the PtIV metal centre lies on a twofold rotation axis and adopts a slightly distorted octahedral coordination geometry. The structure displays weak intramolecular C—H...Br hydrogen-bonding interactions.

  17. Marketing produktu Karel IV.

    OpenAIRE

    Mikšů, Šárka

    2009-01-01

    Goal of the thesis Marketing of the product Karel IV. is to propose chanels of marketing communication and indicate possibilities of next product's development. Theoretical part is based on marketing plan and it's partition. In the practical part you can find market analysis and competing products analysis, product's evolution description and marketing research.

  18. PLATO IV Accountancy Index.

    Science.gov (United States)

    Pondy, Dorothy, Comp.

    The catalog was compiled to assist instructors in planning community college and university curricula using the 48 computer-assisted accountancy lessons available on PLATO IV (Programmed Logic for Automatic Teaching Operation) for first semester accounting courses. It contains information on lesson access, lists of acceptable abbreviations for…

  19. Study of barrier inhomogeneities using I-V-T characteristics of Mo/4H-SiC Schottky diode

    Science.gov (United States)

    Ouennoughi, Z.; Toumi, S.; Weiss, R.

    2015-01-01

    In the present work we investigate the forward current-voltage (I-V) characteristics, over a wide temperature range 298-498 K, of Mo/4H-SiC Schottky diode for which aluminum ion implantation was used to create the high resistivity layer forming the guard ring. The (I-V) analysis based on Thermionic Emission (TE) theory shows a decrease of the barrier height ϕB and an increase of the ideality factor n when the temperature decreases. These anomalies are mainly due to the barrier height inhomogeneities at the metal/semiconductor interface as we get a Gaussian distribution of the barrier heights when we plot the apparent barrier height ϕap versus q/2kT. The mean barrier height and the standard deviation obtained values are ϕbarB0=1.160 eV and σ0=88.049 mV, respectively. However, by means of the modified Richardson plot Ln (Is /T2) - (q2 σ 0 2 / 2k2T2) versus q/kT, the mean barrier height and the Richardson constant values obtained are ϕbarB0=1.139 eV and A*=129.425 A/cm2 K2, respectively. The latter value of ϕbarB0 matches very well with the mean barrier height obtained from the plot of ϕap versus q/2kT. The Richardson constant is much closer to the theoretical value of 146 A/cm2 K2. The series resistance Rs is also estimated from the forward current-voltage characteristics of Mo/4H-SiC Schottky contact. This parameter shows strong temperature dependence. The T0 effect is validated for the 298-498 K temperature range for the used Schottky diode and provides a clear evidence for the barrier inhomogeneity at the Mo/4H-SiC interface. Finally, we note the impact of the implantation process as well as the choice of the used ion on the characterized parameters of the Schottky contact.

  20. Electrical Transport Characteristics of Pd/V/N-InP Schottky Diode From I-V-T and C-V-T Measurements

    Directory of Open Access Journals (Sweden)

    S. Sankar Naik

    2011-01-01

    Full Text Available The temperature dependence of current-voltage (I-V and capacitance-voltage (C-V characteristics of the Pd/V contacts on undoped n-type InP Schottky barrier diodes (SBDs have been systematically investigated in the temperature range of 200-400 K. The transition metal palladium (Pd is used as a second contact layer because it has high work function, it reacts with InP at low temperatures and improved contact morphology. The ideality factor (n and zero-bias barrier height are found to be strongly temperature dependent and while the zero-bias barrier height Φbo (I-V increases, the ideality factor n decreases with increasing temperature. The experimental values of BH and n for the devices are calculated as 0.48 eV (I-V, 0.85 eV (C-V and 4.87 at 200 K, 0.65 eV (I-V, 0.69 (C-V eV and 1.58 at 400 K respectively. The I-V characteristics are analyzed on the basis of thermionic emission (TE theory and the assumption of Gaussian distribution of barrier heights due to barrier inhomogeneities that prevail at the metal-semiconductor interface. The zero-bias barrier height Φbo versus 1/2kT plot has been drawn to obtain the evidence of a Gaussian distribution of the heights and the values of φ=0.89 eV and σ0= 145 meV for the mean barrier height and standard deviation. The conventional Richardson plot exhibits non-linearity with activation energy of 0.53 eV and the Richardson constant value of 4.25 × 10– 6 Acm– 2 K– 2. From the C-V characteristics, measured at 1 MHz the capacitance was determined to increase with increasing temperature. C-V measurements have resulted in higher barrier heights than those obtained from I-V measurements. As a result, it can be concluded that the temperature dependent characteristic parameters for Pd/V/n-InP SBDs can be successfully explained on the basis of TE mechanism with Gaussian distribution of the barrier heights.

  1. Fabrication and characteristics of ZnO MOS capacitors with high-K HfO2 gate dielectrics

    Institute of Scientific and Technical Information of China (English)

    2010-01-01

    ZnO thin films are first deposited on n-type silicon by radio frequency (rf) magnetron sputtering at room temperature.And high-K HfO2 gate dielectrics thin films are deposited on ZnO films to form metal-oxide semiconductor (MOS) capacitors.The temperature to fabricate ZnO MOS capacitors is 400°C,and the low temperature process is applicable for thin film transistors,flat-panel display (FPD),flexible display,etc.The electronic availability of ZnO thin films,which serve as a semiconductor material for MOS capacitors with HfO2 gate dielectric is investigated.High frequency (1 MHz) capacitance-voltage (C-V) and current-voltage (I-V) characteristics of ZnO-based MOS capacitors are measured.The thermal stability and electronic stability of the ZnO capacitors are investigated,respectively.Experimental results indicate that good electrical characteristics can be obtained on ZnO substrates with high-K HfO2 gate dielectrics.Besides,the ZnO capacitors can exhibit high thermal and electronic stabilities.

  2. Ionizing radiation effects on electrical and reliability characteristics of sputtered Ta2O5/Si interface

    Science.gov (United States)

    Rao, Ashwath; Verma, Ankita; Singh, B. R.

    2015-06-01

    This paper describes the effect of ionizing radiation on the interface properties of Al/Ta2O5/Si metal oxide semiconductor (MOS) capacitors using capacitance-voltage (C-V) and current-voltage (I-V) characteristics. The devices were irradiated with X-rays at different doses ranging from 100 rad to 1 Mrad. The leakage behavior, which is an important parameter for memory applications of Al/Ta2O5/Si MOS capacitors, along with interface properties such as effective oxide charges and interface trap density with and without irradiation has been investigated. Lower accumulation capacitance and shift in flat band voltage toward negative value were observed in annealed devices after exposure to radiation. The increase in interfacial oxide layer thickness after irradiation was confirmed by Rutherford Back Scattering measurement. The effect of post-deposition annealing on the electrical behavior of Ta2O5 MOS capacitors was also investigated. Improved electrical and interface properties were obtained for samples deposited in N2 ambient. The density of interface trap states (Dit) at Ta2O5/Si interface sputtered in pure argon ambient was higher compared to samples reactively sputtered in nitrogen-containing plasma. Our results show that reactive sputtering in nitrogen-containing plasma is a promising approach to improve the radiation hardness of Ta2O5/Si MOS devices.

  3. High-temperature characteristics of AixGa1-xN/GaN Schottky diodes

    Institute of Scientific and Technical Information of China (English)

    Zhang Xiaoling; Li Fei; Lv Changzhi; Xie Xuesong; Li Ying; Mohammad S N

    2009-01-01

    High-temperature characteristics of the metal/AlxGa1_xN/GaN M/S/S (M/S/S) diodes have been studied with current-voltage (I-V) and capacitance-voltage (C-V) measurements at high temperatures. Due to the presence of the piezoelectric polarization field and a quantum well at the AIxGa1_xN/GaN interface, the AIxGa1_xN/GaNdiodes show properties distinctly different from those of the AIxGa1_xN diodes. For the AIxGa1_xN/GaN diodes, an increase in temperature accompanies an increase in barrier height and a decrease in ideality factor, while the AIxGa1_xN diodes are opposite. Furthermore, at room temperature, both reverse leakage current and reverse break-down voltage are superior for the AIxGa1_xN/GaN diodes to those for the AIxGa1_xN diodes.

  4. Metastable Electrical Characteristics of Polycrystalline Thin-Film Photovoltaic Modules upon Exposure and Stabilization: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Deline, C. A.; del Cueto, J. A.; Albin, D. S.; Rummel, S. R.

    2011-09-01

    The significant features of a series of stabilization experiments conducted at the National Renewable Energy Laboratory (NREL) between May 2009 and the present are reported. These experiments evaluated a procedure to stabilize the measured performance of thin-film polycrystalline cadmium telluride (CdTe) and copper indium gallium diselenide (CIGS) thin-film photovoltaic (PV) modules. The current-voltage (I-V) characteristics of CdTe and CIGS thin-film PV devices and modules exhibit transitory changes in electrical performance after thermal exposure in the dark and/or bias and light exposures. We present the results of our case studies of module performance versus exposure: light-soaked at 65 degrees C; exposed in the dark under forward bias at 65 degrees C; and, finally, longer-term outdoor exposure. We find that stabilization can be achieved to varying degrees using either light-soaking or dark bias methods and that the existing IEC 61646 light-soaking interval may be appropriate for CdTe and CIGS modules with one caveat: it is likely that at least three exposure intervals are required for stabilization.

  5. Investigation Into the Effects of Nucleotide Content on the Electrical Characteristics of DNA Plasmid Molecular Wires.

    Science.gov (United States)

    Goshi, Noah; Narenji, Alaleh; Bui, Chris; Mokili, John L; Kassegne, Sam

    2016-09-01

    In this study, we investigate the effect of nucleotide content on the conductivity of plasmid length DNA molecular wires covalently bound to high aspect-ratio gold electrodes. The DNA wires were all between [Formula: see text] in length (>6000bp), and contained either 39%, 53%, or 64% GC base-pairs. We compared the current-voltage (I-V) and frequency-impedance characteristics of the DNA wires with varying GC content, and observed statistically significantly higher conductivity in DNA wires containing higher GC content in both AC and DC measurement methods. Additionally, we noted that the conductivity decreased as a function of time for all DNA wires, with the impedance at 100 Hz nearly doubling over a period of seven days. All readings were taken in humidity and temperature controlled environments on DNA wires suspended above an insulative substrate, thus minimizing the effect of experimental and environmental factors as well as potential for nonlinear alternate DNA confirmations. While other groups have studied the effect of GC content on the conductivity of nanoscale DNA molecules (DNA wires at scales that may be required during the fabrication of DNA-based electronics. Furthermore, our results provide further evidence that many of the charge transfer theories developed from experiments using nanoscale DNA molecules may still be applicable for DNA wires at the micro scale.

  6. Investigation of Effects of Nucleotide Content on Electrical Characteristics of DNA Plasmid Molecular Wires.

    Science.gov (United States)

    Goshi, Noah; Narenji, Alaleh; Bui, Chris; Mokili, John L; Kassegne, Sam

    2016-07-28

    In this study, we investigate the effect of nucleotide content on the conductivity of plasmid length DNA molecular wires covalently bound to high aspect-ratio gold electrodes. The DNA wires were all between 2.20-2.35μm in length (>6000bp), and contained either 39%, 53%, or 64% GC base-pairs. We compared the current-voltage (I-V) and frequency-impedance characteristics of the DNA wires with varying GC content, and observed statistically significantly higher conductivity in DNA wires containing higher GC content in both AC and DC measurement methods. Additionally, we noted that the conductivity decreased as a function of time for all DNA wires, with the impedance at 100Hz nearly doubling over a period of seven days. All readings were taken in humidity and temperature controlled environments on DNA wires suspended above an insulative substrate, thus minimizing the effect of experimental and environmental factors as well as potential for nonlinear alternate DNA confirmations. While other groups have studied the effect of GC content on the conductivity of nano-scale DNA molecules (DNA wires at scales that may be required during the fabrication of DNA-based electronics. Furthermore, our results provide further evidence that many of the charge transfer theories developed from experiments using nano-scale DNA molecules may still be applicable for DNA wires at the micro-scale.

  7. Enhanced Design Alternative IV

    Energy Technology Data Exchange (ETDEWEB)

    N. E. Kramer

    1999-05-18

    This report evaluates Enhanced Design Alternative (EDA) IV as part of the second phase of the License Application Design Selection (LADS) effort. The EDA IV concept was compared to the VA reference design using criteria from the ''Design Input Request for LADS Phase II EDA Evaluations'' (CRWMS M&O 1999b) and (CRWMS M&O 1999f). Briefly, the EDA IV concept arranges the waste packages close together in an emplacement configuration known as ''line load''. Continuous pre-closure ventilation keeps the waste packages from exceeding the 350 C cladding and 200 C (4.3.13) drift wall temperature limits. This EDA concept keeps relatively high, uniform emplacement drift temperatures (post-closure) to drive water away from the repository and thus dry out the pillars between emplacement drifts. The waste package is shielded to permit human access to emplacement drifts and includes an integral filler inside the package to reduce the amount of water that can contact the waste form. Closure of the repository is desired 50 years after first waste is emplaced. Both backfill and a drip shields will be emplaced at closure to improve post-closure performance.

  8. Hospitalization Costs for Patients Undergoing Orthopedic Surgery Treated With Intravenous Acetaminophen (IV-APAP) Plus Other IV Analgesics or IV Opioid Monotherapy for Postoperative Pain.

    Science.gov (United States)

    Maiese, Brett A; Pham, An T; Shah, Manasee V; Eaddy, Michael T; Lunacsek, Orsolya E; Wan, George J

    2017-02-01

    To assess the impact on hospitalization costs of multimodal analgesia (MMA), including intravenous acetaminophen (IV-APAP), versus IV opioid monotherapy for postoperative pain management in patients undergoing orthopedic surgery. Utilizing the Truven Health MarketScan(®) Hospital Drug Database (HDD), patients undergoing total knee arthroplasty (TKA), total hip arthroplasty (THA), or surgical repair of hip fracture between 1/1/2011 and 8/31/2014 were separated into postoperative pain management groups: MMA with IV-APAP plus other IV analgesics (IV-APAP group) or an IV opioid monotherapy group. All patients could have received oral analgesics. Baseline characteristics and total hospitalization costs were compared. Additionally, an inverse probability treatment weighting [IPTW] with propensity scores analysis further assessed hospitalization cost differences. The IV-APAP group (n = 33,954) and IV opioid monotherapy group (n = 110,300) differed significantly (P opioid monotherapy group (US$12,540 ± $9564 vs. $13,242 ± $35,825; P opioid monotherapy. This difference was driven by medical costs; importantly, there was no difference in pharmacy costs. Generalizability of the results may be limited to patients admitted to hospitals similar to those included in HDD. Dosing could not be determined, so it was not possible to quantify utilization of IV-APAP or ascertain differences in opioid consumption between the 2 groups. This study did not account for healthcare utilization post-discharge.

  9. Thermal annealing behaviour of Pd Schottky contacts on melt-grown single crystal ZnO studied by IV and CV measurements

    Energy Technology Data Exchange (ETDEWEB)

    Mtangi, W., E-mail: wilbert.mtangi@up.ac.za [Department of Physics, University of Pretoria, Private Bag X20, Hatfield 0028 (South Africa); Auret, F.D.; Chawanda, A.; Janse van Rensburg, P.J.; Coelho, S.M.M.; Nel, J.M.; Diale, M.; Schalkwyk, L. van [Department of Physics, University of Pretoria, Private Bag X20, Hatfield 0028 (South Africa); Nyamhere, C. [Department of Physics, P.O. Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa)

    2012-02-15

    Highlights: Black-Right-Pointing-Pointer Highly rectifying Pd/ZnO contacts have been fabricated. Black-Right-Pointing-Pointer The rectification behaviour decrease with annealing temperature. Black-Right-Pointing-Pointer The surface donor concentration increases with increase in annealing temperature. Black-Right-Pointing-Pointer The depletion layer width at a specific reverse voltage decreases with increase in annealing temperature. - Abstract: Current-voltage (IV) and capacitance-voltage (CV) measurement techniques have successfully been employed to study the effects of annealing highly rectifying Pd/ZnO Schottky contacts. IV results reveal a decrease in the contact quality with increasing annealing temperature as confirmed by a decrease in the zero bias barrier height and an increase in the reverse current measured at -1.5 V. An average barrier height of (0.77 {+-} 0.02) eV has been calculated by assuming pure thermionic emission for the as-deposited material and as (0.56 {+-} 0.03) eV after annealing at 550 Degree-Sign C. The reverse current has been measured as (2.10 {+-} 0.01) Multiplication-Sign 10{sup -10} A for the as-deposited and increases by 5 orders of magnitude after annealing at 550 Degree-Sign C to (1.56 {+-} 0.01) Multiplication-Sign 10{sup -5} A. The depletion layer width measured at -2.0 V has shown a strong dependence on thermal annealing as it decreases from 1.09 {mu}m after annealing at 200 Degree-Sign C to 0.24 {mu}m after annealing at 500 Degree-Sign C, resulting in the modification of the dopant concentration within the depletion region and hence the current flowing through the interface from pure thermionic emission to thermionic field emission with the donor concentrations increasing from 6.90 Multiplication-Sign 10{sup 15} cm{sup -3} at 200 Degree-Sign C to 6.06 Multiplication-Sign 10{sup 16} cm{sup -3} after annealing at 550 Degree-Sign C. This increase in the volume concentration has been explained as an effect of a conductive channel

  10. Analysis of the electrical characteristics of Zn/ZnSe/n-Si/Au-Sb structure fabricated using SILAR method as a function of temperature

    Energy Technology Data Exchange (ETDEWEB)

    Guezeldir, B. [Department of Physics, Faculty of Sciences, University of Atatuerk, 25240 Erzurum (Turkey); Saglam, M., E-mail: msaglam@atauni.edu.t [Department of Physics, Faculty of Sciences, University of Atatuerk, 25240 Erzurum (Turkey); Ates, A. [Department of Physics, Faculty of Sciences, University of Atatuerk, 25240 Erzurum (Turkey)

    2010-09-10

    The Successive Ionic Layer Adsorption and Reaction (SILAR) method has been used to deposit ZnSe thin film onto Si substrate to obtain the Zn/ZnSe/n-Si/Au-Sb sandwich structure. The X-Ray Diffraction (XRD) and Scanning Electron Microscope (SEM) methods are used to investigate the structural and morphological properties of films. The XRD and SEM studies reveal that the films are covered well on Si substrate and have good polycrystalline structure and crystalline levels. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics of this structure have been investigated as a function of the temperature (80-300 K) with 20 K steps. The ideality factor (n) and zero-bias barrier height ({Phi}{sub b0}) value which obtained from I-V curves were found to be strongly temperature dependent. While {Phi}{sub b0} increases with increasing temperature, n decreases. This behavior of the {Phi}{sub b0} and n can be attributed to barrier inhomogeneities at the metal-semiconductor (M-S) interface. The temperature dependence of the I-V characteristics of the Zn/ZnSe/n-Si/Au-Sb structure can reveal the existence of a double Gaussian distribution. The mean barrier height and the Richardson constant values are obtained as 0.925 eV and 1.140 eV, 130 A/cm{sup 2} K{sup 2} and 127 A/cm{sup 2} K{sup 2}, from the modified Richardson plot, respectively. Furthermore, the barrier height and carrier concentration are calculated from reverse bias C{sup -2}-V measurements at 200 kHz frequency as a function of the temperature.

  11. Psychopathological characteristics of patients seeking for bariatric surgery, either affected or not by binge eating disorder following the criteria of the DSM IV TR and of the DSM 5.

    Science.gov (United States)

    Vinai, Piergiuseppe; Da Ros, Annalisa; Speciale, Maurizio; Gentile, Nicola; Tagliabue, Anna; Vinai, Paolo; Bruno, Cecilia; Vinai, Luisa; Studt, Stacia; Cardetti, Silvia

    2015-01-01

    We evaluate whether there are any significant differences in psychopathology between severe obese patients affected by Binge Eating Disorder diagnosed following both the DSM IV TR and the DSM5 criteria, and severe obese patients not having an eating disorder. 118 severe obese patients seeking treatment at a center for bariatric surgery in northern Italy were asked to take part in the current study for a period of six months. Average participant age was 44.27 years, SD 12.42. Age ranged from 18 to 67 years. Average patient BMI was 45.03, SD 7.11, ranging from 32.14 to 66.16 kg/m(2). Seventy seven of the patients (65.3%) were females and 41 (34.7%) were males. BED diagnosis was determined following the diagnostic criteria of both the DSM IV TR and the DSM 5. The presence of other eating disorders was excluded through a clinical screening using the Eating Disorder Inventory (EDI). Patient eating habits and the presence of emotional eating were appraised using the Three-Factor Eating Questionnaire. Levels of depression and anxiety were evaluated using the Beck Depression Inventory and the State Trait Anxiety Inventory. 57 out of 118 patients were found to be affected by BED following the DSM 5 criteria; among them 24 followed those of the DSM IV TR. BED patients scored higher on four subscales of the Eating Disorders Inventory: Drive for thinness (DT), Bulimia (B), Body dissatisfaction (BD) and Interoceptive awareness (IA) on the STAI and on the Disinhibition and Hunger subscales of the TFEQ. The results confirm the presence of high levels of psychopathology among patients diagnosed with BED, even if they have been diagnosed following the criteria of the DSM 5. There is a great overlap in psychopathology between BED patients diagnosed following the DSM IV TR and the DSM 5 criteria. Copyright © 2014 Elsevier Ltd. All rights reserved.

  12. Effect of temperature and illumination on the electrical characteristics of polymer-fullerene bulk-heterojunction solar cells

    NARCIS (Netherlands)

    Riedel, [No Value; Parisi, J; Dyakonov, [No Value; Lutsen, L; Vanderzande, D; Hummelen, JC; Riedel, Ingo; Dyakonov, Vladimir

    2004-01-01

    The current-voltage characteristics of ITO/PEDOT:PSS/OC1C10-PPV:PCBM/Al solar cells were measured in the temperature range 125-320 K under variable illumination, between 0.03 and 100 mW cm(-2) (white light), with the aim of determining the efficiency-limiting mechanism(s) in these devices, and the t

  13. Study on the I–V characteristics of quantum well/dot embedded GaAs/AlGaAs structures - A transfer matrix method

    Energy Technology Data Exchange (ETDEWEB)

    Ganesan, P.; Vanitha, K.; Senthilkumar, L., E-mail: lsenthilkumar@buc.edu.in [Department of Physics, Bharathiar University, Coimbatore- 641 046, Tamil Nadu (India)

    2015-08-28

    The tunneling current has been calculated by a derived analytical expression for the transmission coefficient (TC) based on the theory of coherent resonant tunneling within the effective mass approximation by applying a constant field in quantum well/dot dopped RTD. For the bare Al{sub 0.35}Ga{sub 0.65}As double barrier structure, the peak to valley ratio is 0.165 from the I-V characteristics. Notably, the presence of In{sub 0.21}Ga{sub 0.79}As well in the emitter region significantly enhances the peak to valley ratio to 0.970. Interestingly, the presence of both the In{sub 0.21}Ga{sub 0.79}As well and InAs QD, increases the peak to valley ratio further to 0.978, because of the greater probability for the energy levels in these regions to be in resonance. On comparing experimental results, which show the similar trend for the current-voltage characteristics, imply that the quantum structure considered here is suitable for device applications.

  14. Diaquatetrabromidotin(IV trihydrate

    Directory of Open Access Journals (Sweden)

    Fei Ye

    2012-09-01

    Full Text Available The title compound, [SnBr4(H2O2]·3H2O, forms large colourless crystals in originally sealed samples of tin tetrabromide. It constitutes the first structurally characterized hydrate of SnBr4 and is isostructural with the corresponding hydrate of SnCl4. It is composed of SnIV atoms octahedrally coordinated by four Br atoms and two cis-related water molecules. The octahedra exhibit site symmetry 2. They are arranged into columns along [001] via medium–strong O—H...O hydrogen bonds involving the two lattice water molecules (one situated on a twofold rotation axis while the chains are interconnected via longer O—H...Br hydrogen bonds, forming a three-dimensional network.

  15. Effects of thermal annealing on electrical characteristics of Cd/CdS/n-Si/Au-Sb sandwich structure

    Energy Technology Data Exchange (ETDEWEB)

    Saglam, M., E-mail: msaglam@atauni.edu.t [Department of Physics, Faculty of Sciences and Arts, University of Atatuerk, 25240 Erzurum (Turkey); Ates, A.; Guezeldir, B.; Astam, A. [Department of Physics, Faculty of Sciences and Arts, University of Atatuerk, 25240 Erzurum (Turkey); Yildirim, M.A. [Department of Physics, Faculty of Education, University of Erzincan, Erzincan (Turkey)

    2009-09-18

    In general, at the metal-semiconductor contacts, interfacial layers have been fabricated by different methods such as molecular beam epitaxy, metal organic chemical vapor deposition, sputtering and vacuum evaporation. However, all of these techniques have encountered various difficulties in the deposited films. Instead of these methods, since Successive Ionic Layer Adsorption and Reaction (SILAR) method is simple, fast, sensitive, and less costly to prepare interfacial layer, we have first employed this method in order to prepare Cd/CdS/n-Si/Au-Sb sandwich structure. For this reason, the CdS thin film has been directly formed on n-type Si substrate by means of SILAR method. The Cd/CdS/n-Si/Au-Sb sandwich structure has demonstrated clearly rectifying behaviour by the current-voltage (I-V) curves studied at room temperature. In order to observe the effect of the thermal annealing, this structure has been annealed at temperatures from 50 to 300 deg. C for 3 min in N{sub 2} atmosphere. The characteristic parameters such as barrier height, ideality factor and series resistance of this structure have been calculated from the forward bias I-V characteristics as a function of annealing temperature with different methods. The values of n, PHI{sub b} and mean R{sub s} of the initial Cd/CdS/n-Si/Au-Sb sandwich structure were found to be 2.31, 0.790 eV and 1.86 kOMEGA respectively. After annealing at 300 deg. C, these values were changed to 1.89, 0.765 eV and 0.48 kOMEGA. It has been seen that the barrier height, ideality factor and series resistance have slightly changed with increasing annealing temperature up to 300 deg. C.

  16. Modified electrical characteristics of Pt/n-type Ge Schottky diode with a pyronine-B interlayer

    Science.gov (United States)

    Jyothi, I.; Janardhanam, V.; Rajagopal Reddy, V.; Choi, Chel-Jong

    2014-11-01

    The electrical characteristics of a Pt/n-type Ge Schottky diode with a pyronine-B (PYR-B) interlayer prepared by spin coating was investigated by current-voltage (I-V) and capacitance-voltage (C-V) measurements. It was observed that the barrier height of Pt/PYR-B/n-type Ge (0.65 eV) was higher than that of the conventional Pt/n-type Ge Schottky diode (0.58 eV). This is attributed to the fact that the organic interlayer increases the effective barrier height by influencing the space-charge region of Ge. The introduction of the PYR-B interlayer led to a reduction of the interface state density in the Pt Schottky contact to n-type Ge. The electric field dependence of the reverse leakage current revealed that Schottky emission and Poole-Frenkel emission mechanisms dominated the reverse current in the Pt/n-type Ge and Pt/PYR-B/n-type Ge Schottky diodes, respectively.

  17. dBASE IV basics

    Energy Technology Data Exchange (ETDEWEB)

    O`Connor, P.

    1994-09-01

    This is a user`s manual for dBASE IV. dBASE IV is a popular software application that can be used on your personal computer to help organize and maintain your database files. It is actually a set of tools with which you can create, organize, select and manipulate data in a simple yet effective manner. dBASE IV offers three methods of working with the product: (1) control center: (2) command line; and (3) programming.

  18. Phase IV of Drug Development

    OpenAIRE

    Viraj Suvarna

    2010-01-01

    Not all Phase IV studies are post-marketing surveillance (PMS) studies but every PMS study is a phase IV study. Phase IV is also an important phase of drug development. In particular, the real world effectiveness of a drug as evaluated in an observational, non-interventional trial in a naturalistic setting which complements the efficacy data that emanates from a pre-marketing randomized controlled trial (RCT). No matter how many patients are studied pre-marketing in a controlled environment, ...

  19. Local I-V characteristics of high-k ultra-thin ZrO{sub 2}- and ZrO{sub 2}/Al{sub 2}O{sub 3}/ZrO{sub 2}-films.

    Energy Technology Data Exchange (ETDEWEB)

    Martin, Dominik; Grube, Matthias; Erben, Elke; Schroeder, Uwe; Weber, Walter [namlab Gmbh, D-01187 Dresden (Germany); Mueller, Johannes; Weinreich, Wenke [Fraunhofer-CNT, D-01099 Dresden (Germany); Geelhaar, Lutz; Riechert, Henning [Paul-Drude-Institut fuer Festkoerperelektronik, D-10117 Berlin (Germany); Mikolajick, Thomas [namlab Gmbh, D-01187 Dresden (Germany); Chair of Nanoelectronic Materials, 01062 Dresden (Germany)

    2011-07-01

    In order to produce ultra thin ZrO{sub 2}-films, with a dielectric constant high enough to satisfy industry demands, it is necessary to reach the tetragonal crystalline phase. This can be achieved either by high temperature deposition or by a post deposition annealing step. Both however induce high leakage currents. Small amounts of Al{sub 2}O{sub 3} can be incorporated in ZrO{sub 2} to reduce leakage current. To get more insight into the charge carrier transport mechanisms involved, a thickness series of ultra thin ZrO{sub 2}- and ZrO{sub 2}/Al{sub 2}O{sub 3}/ZrO{sub 2}-films were deposited by ALD and subjected to different rapid thermal annealing processes. These layers were examined by GI-XRD, TEM, I-V-, C-V-Spectroscopy and conductive atomic force microscopy. Thus, leakage currents are reduced to 3.2.10{sup -8}(A)/(cm{sup 2}) at 1 V while maintaining the high k value (CET=1 nm at 1 V for a 10 nm film). CAFM studies demonstrate how the crystallization effects the charge transport mechanisms on the mesoscopic scale. Local I-V curves acquired on amorphous films and at grain boundaries in nanocrystalline films in yield lower breakdown voltages and higher leakage currents at crystallite grain boundaries.

  20. Confirmatory Factor Analysis of the WAIS-IV/WMS-IV

    Science.gov (United States)

    Holdnack, James A.; Zhou, Xiaobin; Larrabee, Glenn J.; Millis, Scott R.; Salthouse, Timothy A.

    2011-01-01

    The Wechsler Adult Intelligence Scale-fourth edition (WAIS-IV) and the Wechsler Memory Scale-fourth edition (WMS-IV) were co-developed to be used individually or as a combined battery of tests. The independent factor structure of each of the tests has been identified; however, the combined factor structure has yet to be determined. Confirmatory…

  1. Confirmatory Factor Analysis of the WAIS-IV/WMS-IV

    Science.gov (United States)

    Holdnack, James A.; Zhou, Xiaobin; Larrabee, Glenn J.; Millis, Scott R.; Salthouse, Timothy A.

    2011-01-01

    The Wechsler Adult Intelligence Scale-fourth edition (WAIS-IV) and the Wechsler Memory Scale-fourth edition (WMS-IV) were co-developed to be used individually or as a combined battery of tests. The independent factor structure of each of the tests has been identified; however, the combined factor structure has yet to be determined. Confirmatory…

  2. The effect of asymmetric barrier layers in the waveguide region on power characteristics of QW lasers

    DEFF Research Database (Denmark)

    Zubov, F. I.; Zhukov, A. E.; Shernyakov, Yu M.

    2015-01-01

    Current-voltage and light-current characteristics of quantum-well lasers have been studied at high drive currents. The introduction of asymmetric barrier layers adjacent to the active region caused a significant suppression of the nonlinearity in the light-current characteristic and an increase...... in the external differential efficiency. As a result, the maximum wallplug efficiency increased by 9%, while the output optical power increased by 29%....

  3. Ehlers-Danlos syndrome type IV

    Directory of Open Access Journals (Sweden)

    Germain Dominique P

    2007-07-01

    Full Text Available Abstract Ehlers-Danlos syndrome type IV, the vascular type of Ehlers-Danlos syndromes (EDS, is an inherited connective tissue disorder defined by characteristic facial features (acrogeria in most patients, translucent skin with highly visible subcutaneous vessels on the trunk and lower back, easy bruising, and severe arterial, digestive and uterine complications, which are rarely, if at all, observed in the other forms of EDS. The estimated prevalence for all EDS varies between 1/10,000 and 1/25,000, EDS type IV representing approximately 5 to 10% of cases. The vascular complications may affect all anatomical areas, with a tendency toward arteries of large and medium diameter. Dissections of the vertebral arteries and the carotids in their extra- and intra-cranial segments (carotid-cavernous fistulae are typical. There is a high risk of recurrent colonic perforations. Pregnancy increases the likelihood of a uterine or vascular rupture. EDS type IV is inherited as an autosomal dominant trait that is caused by mutations in the COL3A1 gene coding for type III procollagen. Diagnosis is based on clinical signs, non-invasive imaging, and the identification of a mutation of the COL3A1 gene. In childhood, coagulation disorders and Silverman's syndrome are the main differential diagnoses; in adulthood, the differential diagnosis includes other Ehlers-Danlos syndromes, Marfan syndrome and Loeys-Dietz syndrome. Prenatal diagnosis can be considered in families where the mutation is known. Choriocentesis or amniocentesis, however, may entail risk for the pregnant woman. In the absence of specific treatment for EDS type IV, medical intervention should be focused on symptomatic treatment and prophylactic measures. Arterial, digestive or uterine complications require immediate hospitalisation, observation in an intensive care unit. Invasive imaging techniques are contraindicated. Conservative approach is usually recommended when caring for a vascular

  4. DSM-IV Progress Report.

    Science.gov (United States)

    Hohenshil, Thomas H.

    1992-01-01

    Notes that Diagnostic and Statistical Manual of Mental Disorders fourth edition (DSM-IV) will become one of most frequently used reference documents in counseling profession. Describes progress being made in development of DSM-IV, scheduled for publication in 1994. Describes revision process and proposed organizational changes and new diagnostic…

  5. SONOS Nonvolatile Memory Cell Programming Characteristics

    Science.gov (United States)

    MacLeod, Todd C.; Phillips, Thomas A.; Ho, Fat D.

    2010-01-01

    Silicon-oxide-nitride-oxide-silicon (SONOS) nonvolatile memory is gaining favor over conventional EEPROM FLASH memory technology. This paper characterizes the SONOS write operation using a nonquasi-static MOSFET model. This includes floating gate charge and voltage characteristics as well as tunneling current, voltage threshold and drain current characterization. The characterization of the SONOS memory cell predicted by the model closely agrees with experimental data obtained from actual SONOS memory cells. The tunnel current, drain current, threshold voltage and read drain current all closely agreed with empirical data.

  6. Aqueous complexation of thorium(IV), uranium(IV), neptunium(IV), plutonium(III/IV), and cerium(III/IV) with DTPA.

    Science.gov (United States)

    Brown, M Alex; Paulenova, Alena; Gelis, Artem V

    2012-07-16

    Aqueous complexation of Th(IV), U(IV), Np(IV), Pu(III/IV), and Ce(III/IV) with DTPA was studied by potentiometry, absorption spectrophotometry, and cyclic voltammetry at 1 M ionic strength and 25 °C. The stability constants for the 1:1 complex of each trivalent and tetravalent metal were calculated. From the potentiometric data, we report stability constant values for Ce(III)DTPA, Ce(III)HDTPA, and Th(IV)DTPA of log β(101) = 20.01 ± 0.02, log β(111) = 22.0 ± 0.2, and log β(101) = 29.6 ± 1, respectively. From the absorption spectrophotometry data, we report stability constant values for U(IV)DTPA, Np(IV)DTPA, and Pu(IV)DTPA of log β(101) = 31.8 ± 0.1, 32.3 ± 0.1, and 33.67 ± 0.02, respectively. From the cyclic voltammetry data, we report stability constant values for Ce(IV) and Pu(III) of log β(101) = 34.04 ± 0.04 and 20.58 ± 0.04, respectively. The values obtained in this work are compared and discussed with respect to the ionic radius of each cationic metal.

  7. The Modern RPG IV Language

    CERN Document Server

    Cozzi, Robert

    2006-01-01

    This updated, classic work on the RPG language covers all the new functions and features that have been added since 2003, including new op codes and built-in functions, new chapters on free-format RPG IV and Web programming interfaces, information on implementing XML within RPG IV, and expanded information on procedures. This reference guide takes both novice and experienced RPG IV programmers through the language, from its foundation to its most advanced techniques. More than 100 charts and tables, as well as 350 real-life code samples of functions and operations are included, showing readers

  8. Genetics Home Reference: mucopolysaccharidosis type IV

    Science.gov (United States)

    ... Mucopolysaccharidosis type IV (MPS IV), also known as Morquio syndrome, is a progressive condition that mainly affects ... Management Genetic Testing (3 links) Genetic Testing Registry: Morquio syndrome Genetic Testing Registry: Mucopolysaccharidosis, MPS-IV-A ...

  9. Anticancer platinum (IV) prodrugs with novel modes of activity.

    Science.gov (United States)

    Chin, Chee Fei; Wong, Daniel Yuan Qiang; Jothibasu, Ramasamy; Ang, Wee Han

    2011-01-01

    Over the past four decades, the search for improved platinum drugs based on the classical platinum (II)-diam(m)ine pharmacophore has yielded only a handful of successful candidates. New methodologies centred on platinum (IV) complexes, with better stability and expanded coordination spheres, offer the possibility of overcoming limitations inherent to platinum (II) drugs. In this review, novel strategies of targeting and killing cancer cells using platinum (IV) constructs are discussed. These approaches exploit the unique electrochemical characteristics and structural attributes of platinum (IV) complexes as a means of developing anticancer prodrugs that can target and selectively destroy cancer cells. Anticancer platinum (IV) prodrugs represent promising new strategies as targeted chemotherapeutic agents in the ongoing battle against cancer.

  10. Characteristics of InAs/AlGaAs self-organized quantum dot modulation doped field effect transistors

    Science.gov (United States)

    Phillips, J.; Kamath, K.; Brock, T.; Bhattacharya, P.

    1998-06-01

    We have investigated the dc characteristics of InGaAs/AlGaAs modulation doped field effect transistors in which a layer of self-organized InAs quantum dots is inserted adjacent to the pseudomorphic quantum well channel. Distinct steps and a negative differential resistance are observed in the current-voltage characteristics at room temperature and lower temperatures. These are attributed to conduction through the bound states in the quantum dots.

  11. Investigation on Concentrated V(IV)/V(V) Redox Reaction by Rotating Disc Voltammetry

    Institute of Scientific and Technical Information of China (English)

    WEN Yue-Hua; ZHANG Hua-Min; QIAN Peng; MA Hai-Peng; YI Bao-Lian; YANG Yu-Sheng

    2007-01-01

    The kinetic characteristics of the concentrated V(IV)/V(V) couple have been studied at a glassy carbon electrode in sulfuric acid using rotating-disc electrode and cyclic voltammetry. The kinetics of the V(IV)/V(V) redox couple reaction was found to be electrochemically quasi-reversible with the slower kinetics for the V(V) reduction than that for the V(IV) oxidation. And, dependence of diffusion coefficients and kinetic parameters of V(IV) species on the V(IV) and H25O4 concentration was investigated. It is shown that the concentration of active species V(IV)centration, the diffusion coefficients of V(IV) were gradually reduced whereas its kinetics was improved considerably,espicially in the case of Ⅴ(Ⅳ)and H2SO4 up to 2 and 4 mol·L-1.

  12. Confirmatory factor analysis of the WAIS-IV/WMS-IV.

    Science.gov (United States)

    Holdnack, James A; Xiaobin Zhou; Larrabee, Glenn J; Millis, Scott R; Salthouse, Timothy A

    2011-06-01

    The Wechsler Adult Intelligence Scale-fourth edition (WAIS-IV) and the Wechsler Memory Scale-fourth edition (WMS-IV) were co-developed to be used individually or as a combined battery of tests. The independent factor structure of each of the tests has been identified; however, the combined factor structure has yet to be determined. Confirmatory factor analysis was applied to the WAIS-IV/WMS-IV Adult battery (i.e., age 16-69 years) co-norming sample (n = 900) to test 13 measurement models. The results indicated that two models fit the data equally well. One model is a seven-factor solution without a hierarchical general ability factor: Verbal Comprehension, Perceptual Reasoning, Processing Speed, Auditory Working Memory, Visual Working Memory, Auditory Memory, and Visual Memory. The second model is a five-factor model composed of Verbal Comprehension, Perceptual Reasoning, Processing Speed, Working Memory, and Memory with a hierarchical general ability factor. Interpretative implications for each model are discussed.

  13. Free-format RPG IV

    CERN Document Server

    Martin, Jim

    2013-01-01

    This how-to guide offers a concise and thorough introduction to the increased productivity, better readability, and easier program maintenance that comes with the free-format style of programming in RPG IV. Although free-format information is available in IBM manuals, it is not separated from everything else, thereby requiring hours of tedious research to track down the information needed. This book provides everything one needs to know to write RPG IV in the free-format style, and author Jim Martin not only teaches rules and syntax but also explains how this new style of coding has the pot

  14. Effect of rate of weight gain of steers during the stocker phase. IV. Rumen fermentation characteristics and expression of genes involved in substrate utilization for fatty acid synthesis in adipose tissues of growing-finishing beef cattle.

    Science.gov (United States)

    Lancaster, P A; Sharman, E D; Horn, G W; Krehbiel, C R; Dillwith, J W; Starkey, J D

    2015-06-01

    The objective of this study was to determine the impact of stocker production systems differing in growth rate on rumen fermentation characteristics and utilization of substrates for fatty acid synthesis in intramuscular (IM), subcutaneous (SC), and perirenal (PR) adipose tissues. Angus steers were assigned to 4 stocker cattle production systems in 2 consecutive years: 1) 1.0 kg/d of 40% CP cottonseed meal–based supplement while grazing dormant native range (CON), 2) ground corn/soybean meal–based supplement while grazing dormant native range fed at 1% of BW (CORN), 3) grazing wheat pasture at a high stocking rate to achieve a low rate of BW gain (LGWP), and 4) grazing wheat pasture at a low stocking rate for a high rate of BW gain (HGWP). Eight ruminally cannulated steers were used to determine rumen fermentation characteristics. Steers were harvested during the stocker phase at similar age (different carcass weight) in Exp. 1 (3 steers/treatment) or at similar carcass weight in Exp. 2 (4 steers/treatment). Adipose tissues were analyzed for mRNA expression of genes involved in glucose (solute carrier family 2, member 4 [GLUT4], glucose-6-phosphate dehydrogenase [G6PDH], phosphofructokinase, muscle [PFKM], and pyruvate kinase 2, muscle [PK2]), lactate (lactate dehydrogenase B [LDHB]), and acetate (acetyl-CoA synthetase, cytosol [ACSS2]) utilization for fatty acid synthesis. The acetate:propionate ratio was least (P adipose tissue. Expression of PFKM and PK2 mRNA tended (F-test; P adipose tissue. At similar HCW, expression of GLUT4 and G6PDH mRNA were greater (P adipose tissue of LGWP and HGWP steers compared with CON and CORN steers but not in IM and PR adipose tissue. Expression of LDHB mRNA was lesser (P adipose tissue but greater (P adipose tissue of LGWP and HGWP steers compared with CON and CORN steers. These results indicate a shift toward glucose utilization in SC adipose tissue but a shift towards lactate utilization in PR adipose tissue. These results

  15. Improvement of the decay heat removal characteristics of the generation IV gas-cooled fast reactor; Amelioration des caracteristiques de la dissipation de la chaleur de decroissance pour les reacteurs a neutrons rapides de quatrieme generation refroidi au gaz

    Energy Technology Data Exchange (ETDEWEB)

    Epiney, A.S.

    2010-09-07

    The main drawback of the GFR is the difficulty to evacuate decay heat following a loss-of-coolant accident (LOCA) due to the low thermal inertia of the core, as well as to the low coolant density. The present doctoral research focuses on the improvement of decay heat removal (DHR) for the Generation-IV GFR. The reference GFR system design considered in the thesis is the 2006 CEA concept, with a power of 2400 MWth. The CEA 2006 DHR strategy foresees, in all accidental cases (independent of the system pressure), that the reactor is shut down. For high pressure events, dedicated DHR loops with blowers and heat exchangers are designed to operate when the power conversion system cannot be used to provide acceptable core temperatures under natural convection conditions. For de-pressurized events, the strategy relies on a dedicated small containment (called the guard containment) providing an intermediate back-up pressure. The DHR blowers, designed to work under these pressure conditions, need to be powered either by the power grid or by batteries for at least 24 hours. The specific contributions of the present research - aimed at achieving enhanced passivity of the DHR system for the GFR - are design and analysis related to (1) the injection of heavy gas into the primary circuit after a LOCA, to enable natural convection cooling at an intermediate-pressure level, and (2) an autonomous Brayton loop to evacuate decay heat at low primary pressure in case of a loss of the guard containment pressure. Both these developments reduce the dependence on blower power availability considerably. First, the thermal-hydraulic codes used in the study - TRACE and CATHARE - are validated for gas cooling. The validation includes benchmark comparisons between the codes, serving to identify the sensitivity of the results to the different modeling assumptions. The parameters found to be the most sensitive in this analysis, such as heat transfer and friction models, are then validated via a

  16. Contribution of alpha3(IV)alpha4(IV)alpha5(IV) Collagen IV to the Mechanical Properties of the Glomerular Basement Membrane

    Science.gov (United States)

    Gyoneva, Lazarina

    The glomerular basement membrane (GBM) is a vital part of the blood-urine filtration barrier in the kidneys. In healthy GBMs, the main tension-resisting component is alpha3(IV)alpha4(IV)alpha5(IV) type IV collagen, but in some diseases it is replaced by other collagen IV isoforms. As a result, the GBM becomes leaky and disorganized, ultimately resulting in kidney failure. Our goal is to understanding the biomechanical aspects of the alpha3(IV)alpha4(IV)alpha5(IV) chains and how their absence could be responsible for (1) the initial injury to the GBM and (2) progression to kidney failure. A combination of experiments and computational models were designed for that purpose. A model basement membrane was used to compare experimentally the distensibility of tissues with the alpha3(IV)alpha4(IV)alpha5(IV) chains present and missing. The experiments showed basement membranes containing alpha3(IV)alpha4(IV)alpha5(IV) chains were less distensible. It has been postulated that the higher level of lateral cross-linking (supercoiling) in the alpha3(IV)alpha4(IV)alpha5(IV) networks contributes additional strength/stability to basement membranes. In a computational model of supercoiled networks, we found that supercoiling greatly increased the stiffness of collagen IV networks but only minimally decreased the permeability, which is well suited for the needs of the GBM. It is also known that the alpha3(IV)alpha4(IV)alpha5(IV) networks are more protected from enzymatic degradation, and we explored their significance in GBM remodeling. Our simulations showed that the more protected network was needed to prevent the system from entering a dangerous feedback cycle due to autoregulation mechanisms in the kidneys. Overall, the work adds to the evidence of biomechanical differences between the alpha3(IV)alpha4(IV)alpha5(IV) networks and other collagen IV networks, points to supercoiling as the main source of biomechanical differences, discusses the suitability of alpha3(IV)alpha4(IV

  17. Synthesis and Characterization of Novel Nanocrystalline Zirconium (IV Tungstate Semiconductor

    Directory of Open Access Journals (Sweden)

    S. Manoj

    2011-01-01

    Full Text Available Nanocrystalline zirconium (IV tungstate is prepared by chemical coprecipitation method using ethylene diamine tetra acetic acid as the templating agent. Elemental composition is determined by EDS. The characteristic bonding position is identified using FTIR. XRD is used to find the theoritical value of size and phase identification using JCPDS. Morphology is examined using SEM and HRTEM. UV absorption at 260 nm corresponds to an energy gap of 4.48 eV, characteristic of semiconducting nanoparticles.

  18. Synthesis and Characterization of Novel Nanocrystalline Zirconium (IV) Tungstate Semiconductor

    OpenAIRE

    Manoj, S.; Beena, B.

    2011-01-01

    Nanocrystalline zirconium (IV) tungstate is prepared by chemical coprecipitation method using ethylene diamine tetra acetic acid as the templating agent. Elemental composition is determined by EDS. The characteristic bonding position is identified using FTIR. XRD is used to find the theoritical value of size and phase identification using JCPDS. Morphology is examined using SEM and HRTEM. UV absorption at 260 nm corresponds to an energy gap of 4.48 eV, characteristic of semiconducting nanopar...

  19. The dynamic response of a hot-wire anemometer: IV. Sine-wave voltage perturbation testing for near-wall hot-wire/film probes and the presence of low-high frequency response characteristics

    Science.gov (United States)

    Teo, C. J.; Khoo, B. C.; Teo, C. J.; Chew, Y. T.

    2001-01-01

    Experiments were performed using the electronic sine-wave voltage-perturbation test to systematically study the frequency responses of near-wall hot-wire probes subjected in turn to varying magnitudes of convective velocity and different effects of wall influence. In addition, quartz-substrate hot-film gauges with various thicknesses of quartz coating were also investigated. Results of the high cut-off frequency obtained using the sine-wave test (fsine) were found to be in fair agreement with those obtained using the square-wave test (fS) both for hot-wire and for hot-film sensors. The sine-wave test response curve exhibited a distinct bulging effect for the hot-film gauges. For the hot-wire sensors, a much weaker bulging effect was also observed. In contrast to fS and fsine, the low frequency response characteristic corresponding to the location of the bulging effect (fbulge) compared much more favourably with the dynamic frequency response (fD) obtained by Khoo et al and Chew et al using a known near-wall fluctuating flow field. Freymuth's theory for non-cylindrical hot-film sensors incorporating the Bellhouse-Schultz model was applied to predict the responses of the hot-film wall gauges when they were subjected to electronic sine-wave testing and dynamic perturbation testing under different parametric conditions. Although it is one-dimensional in nature, the model is capable of predicting most of the trends observed in the present study and previous works by Khoo et al (1998a) and Chew et al (1998a).

  20. 11. IV avati Draakoni galeriis...

    Index Scriptorium Estoniae

    2005-01-01

    Tanel Saare (sünd. 1979) näitus "Gott und huhn episode IV: seed shower". Eksponeeritakse väljavõtteid aktsioonidest aastatel 2000-2004 Turus, Nürnbergis, Berliinis, Lohusalus ja Soulis. Osa aktsioone toimus koos rühmitusega Non Grata

  1. VeVeRa-IV

    NARCIS (Netherlands)

    Evelien Eggink; Debbie Oudijk; Klarita Sadiraj

    2012-01-01

    Original title: VeVeRa-IV The Dutch population is set to age rapidly in the coming years. More and more people will also attain a very great age. This means that the need for home care and care provided in nursing or residential care homes will also increase. As part of the Long-term Care Programme

  2. Phase IV of Drug Development.

    Science.gov (United States)

    Suvarna, Viraj

    2010-04-01

    Not all Phase IV studies are post-marketing surveillance (PMS) studies but every PMS study is a phase IV study. Phase IV is also an important phase of drug development. In particular, the real world effectiveness of a drug as evaluated in an observational, non-interventional trial in a naturalistic setting which complements the efficacy data that emanates from a pre-marketing randomized controlled trial (RCT). No matter how many patients are studied pre-marketing in a controlled environment, the true safety profile of a drug is characterized only by continuing safety surveillance through a spontaneous adverse event monitoring system and a post-marketing surveillance/non-interventional study. Prevalent practice patterns can generate leads that could result in further evaluation of a new indication via the RCT route or even a signal that may necessitate regulatory action (change in labeling, risk management/minimization action plan). Disease registries are another option as are the large simple hybrid trials. Surveillance of spontaneously reported adverse events continues as long as a product is marketed. And so Phase IV in that sense never ends.

  3. Phase IV of Drug Development

    Directory of Open Access Journals (Sweden)

    Viraj Suvarna

    2010-01-01

    Full Text Available Not all Phase IV studies are post-marketing surveillance (PMS studies but every PMS study is a phase IV study. Phase IV is also an important phase of drug development. In particular, the real world effectiveness of a drug as evaluated in an observational, non-interventional trial in a naturalistic setting which complements the efficacy data that emanates from a pre-marketing randomized controlled trial (RCT. No matter how many patients are studied pre-marketing in a controlled environment, the true safety profile of a drug is characterized only by continuing safety surveillance through a spontaneous adverse event monitoring system and a post-marketing surveillance/non-interventional study. Prevalent practice patterns can generate leads that could result in further evaluation of a new indication via the RCT route or even a signal that may necessitate regulatory action (change in labeling, risk management/minimization action plan. Disease registries are another option as are the large simple hybrid trials. Surveillance of spontaneously reported adverse events continues as long as a product is marketed. And so Phase IV in that sense never ends.

  4. Modeling and extraction technique for parasitic resistances in MOSFETs Combining DC I-V and low frequency C-V measurement

    Science.gov (United States)

    Shin, Ja Sun; Bae, Hagyoul; Hong, Euiyoun; Jang, Jaeman; Yun, Daeyoun; Lee, Jieun; Kim, Dae Hwan; Kim, Dong Myong

    2012-06-01

    Accurate extraction of parasitic gate (RG), source (RS), drain (RD), and substrate (Rsub) resistances in MOSFETs is important in the modeling and characterization for DC and RF applications. Combining DC current-voltage and low-frequency capacitance-voltage characteristics with an equivalent circuit, we report a simple technique for a complete and separate extraction of parasitic resistances (RG, RS, RD, and Rsub) in individual MOSFETs without employing multiple devices or complicated S-parameter characterization with various device combinations. Intrinsic spreading component is also separated from the contact-related extrinsic component in RS and RD.

  5. Fourth ventricle computed tomography indexes: standardisation and characteristics in neurocysticercosis Índices do IV ventrículo em tomografia computadorizada de crânio: padronização e características na neurocisticercose

    Directory of Open Access Journals (Sweden)

    Svetlana Agapejev

    2002-06-01

    Full Text Available OBJECTIVES: to propose standardisation of fourth ventricle dimensions and to study its characteristics in neurocysticercosis. METHOD: a control group (CG constituted by 114 individuals with normal CT, and 80 patients with neurocysticercosis composed the group with neurocysticercosis (GN. Measures of the inner cranial diameter (Cr, fronto-polar distance between both lateral ventricles (FP, antero-posterior (AP and latero-lateral (LL fourth ventricle width based the standardisation of six indexes. RESULTS: AP/Cr, AP/LL and AP/FP were the more discriminative indexes, presenting in CG the mean values of 0.063, 0.267 and 0.582, respectively. The indexes in GN had values statistically higher than in CG. From GN, 51patients had increased indexes values above 2 standard deviation of the CG mean. AP/Ll was > or = 1 in 95% of patients with ventricular shunting and in 88% with depression. It also occurred in 73% patients with satisfactory follow-up and in everybody who died. CONCLUSION: AP/Cr, AP/LL and AP/FP may represent fourth ventricle dimensions.OBJETIVOS: propor padrão de normalidade das dimensões do IVventrículo e estudar suas características em neurocisticercose. MÉTODO: em um grupo controle (GC constituído de 114 indivíduos com tomografias normais e em outro grupo composto de 80 doentes com neurocisticercose (GN, mediram-se a distância fronto-polar de ventrículos laterais (FP e os diâmetros craniano interno (Cr, ântero-posterior (AP e látero-lateral (LL do IVº ventrículo para a padronização de seis índices. RESULTADOS: AP/Cr, AP/LL e AP/FP foram os índices mais discriminatórios e apresentaram, em GC, valores médios de 0,063, 0,267 e 0,582, respectivamente. Em GN os valores foram estatisticamente superiores a GC. Selecionaram-se 51 doentes do GN com índices > ou = 2 desvios-padrão da média em GC. Neles, AP/Ll foi > ou = 1 em 95% doentes com derivação liquórica e em 88% com depressão, ocorrendo em 73% com evolu

  6. Type II and IV radio bursts in the active period October-November 2003

    CERN Document Server

    Petoussis, V; Kontogeorgos, A; Moussas, X; Preka-Papadema, P; Hillaris, A; Caroubalos, C; Alissandrakis, C E; Bougeret, J -L; Dumas, G; 10.1063/1.2347978

    2010-01-01

    In this report we present the Type II and IV radio bursts observed and analyzed by the radio spectrograph ARTEMIS IV1, in the 650-20MHz frequency range, during the active period October-November 2003. These bursts exhibit very rich fine structures such fibers, pulsations and zebra patterns which is associated with certain characteristics of the associated solar flares and CMEs.

  7. Enhancement of the electrical characteristics of MOS capacitors by reducing the organic content of H{sub 2}O-diluted Spin-On-Glass based oxides

    Energy Technology Data Exchange (ETDEWEB)

    Molina, Joel, E-mail: jmolina@inaoep.mx [National Institute of Astrophysics, Optics and Electronics, Electronics Department, Luis Enrique Erro 1, PO BOX 51 and 216, Tonantzintla, Puebla 72000 (Mexico); Munoz, Ana; Torres, Alfonso; Landa, Mauro; Alarcon, Pablo; Escobar, Manuel [National Institute of Astrophysics, Optics and Electronics, Electronics Department, Luis Enrique Erro 1, PO BOX 51 and 216, Tonantzintla, Puebla 72000 (Mexico)

    2011-10-25

    In this work, the physical, chemical and electrical properties of Metal-Oxide-Semiconductor (MOS) capacitors with Spin-On-Glass (SOG)-based thin films as gate dielectric have been investigated. Experiments of SOG diluted with two different solvents (2-propanol and deionized water) were done in order to reduce the viscosity of the SOG solution so that thinner films (down to {approx}20 nm) could be obtained and their general characteristics compared. Thin films of SOG were deposited on silicon by the sol-gel technique and they were thermally annealed using conventional oxidation furnace and Rapid Thermal Processing (RTP) systems within N{sub 2} ambient after deposition. SOG dilution using non-organic solvents like deionized water and further annealing (at relatively high temperatures {>=}450 deg. C) are important processes intended to reduce the organic content of the films. Fourier-Transform Infrared (FTIR) Spectroscopy results have shown that water-diluted SOG films have a significant reduction in their organic content after increasing annealing temperature and/or dilution percentage when compared to those of undiluted SOG films. Both current-voltage (I-V) and capacitance-voltage (C-V) measurements show better electrical characteristics for SOG-films diluted in deionized water compared to those diluted in 2-propanol (which is an organic solvent). The electrical characteristics of H{sub 2}O-diluted SOG thin films are very similar to those obtained from high quality thermal oxides so that their application as gate dielectrics in MOS devices is promising. Finally, it has been demonstrated that by reducing the organic content of SOG-based thin films, it is possible to obtain MOS devices with better electrical properties.

  8. Photoelectric characteristics of CH3NH3PbI3/p-Si heterojunction

    Science.gov (United States)

    Yamei, Wu; Ruixia, Yang; Hanmin, Tian; Shuai, Chen

    2016-05-01

    Organic-inorganic hybrid perovskite CH3NH3PbI3 film is prepared on p-type silicon substrate using the one-step solution method to form a CH3NH3PbI3/p-Si heterojunction. The film morphology and structure are characterized by atomic force microscopy (AFM) and scanning electron microscopy (SEM). The photoelectric properties of the CH3NH3PbI3/p-Si heterojunction are studied by testing the current-voltage (I-V) with and without illumination and capacitance-voltage (C-V) characteristics. It turns out from the I-V curve without illumination that the CH3NH3PbI3/p-Si heterojunction has a rectifier feature with the rectification ratio over 70 at the bias of ±5 V. Also, there appears a photoelectric conversion phenomenon on this heterojunction with a short circuit current (Isc) of 0.16 μA and an open circuit voltage (Voc) of about 10 mV The high frequency C-V characteristic of the Ag/CH3NH3PbI3/p-Si heterojunction turns out to be similar to that of the metal-insulator-semiconductor (MIS) structure, and a parallel translation of the C-V curve along the forward voltage axis is found. This parallel translation means the existence of defects at the CH3NH3PbI3/p-Si interface and positive fixed charges in the CH3NH3PbI3 layer. The defects at the interface of the CH3NH3PbI3/p-Si heterojunction result in the dramatic decline of the Voc. Besides, the C-V test of CH3NH3PbI3 film shows a non-linear dielectric property and the dielectric value is about 4.64 as calculated. Project supported by the Hebei Province Natural Science Foundation of China (No. F2014202184) and the Tianjin Natural Science Foundation of China (No. 15JCZDJC37800).

  9. Electrical Characteristics and Microstructures of Sm2O3-Doped Bi4Ti3O12 Ceramics

    Institute of Scientific and Technical Information of China (English)

    陈敏; 王豫; 刘祖黎; 董亮; 羊新胜; 姚凯伦

    2004-01-01

    We investigate the electrical properties of Sm-doped Bi4-xSmx Ti3O12 (BST) ceramics prepared by a conventional electroceramic technique. The x-ray diffraction analysis reveals the Bi-layered perovskite structure in all samples.The SEM micrographs show randomly oriented and plate-like morphology. For the samples with x = 0.4 and 1.0,the current-voltage characteristics exhibit negative differential resistance behaviour and the P-V hysteresis loops are characterized by large leakage current, whereas for the samples with x = 0.6 and 0.8, the current-voltage characteristics show simple ohmic behaviour and the P-V hysteresis loops are of the saturated and undistorted hysteresis. The remanent polarization and coercive field of the BST ceramic with x = 0.8 are above 32μC/cm2and 70kV/cm, respectively.

  10. Characteristics of a high brightness gaseous field ion source employing tungsten-carbon doped NiAl needles

    Energy Technology Data Exchange (ETDEWEB)

    Mousa, Marwan S., E-mail: mmousa@mutah.edu.jo [Department of Physics, Mu' tah University, P.O. Box 7, Al-Karak (Jordan)

    2011-05-15

    We report on the characterization of a high brightness gaseous field ion source using an emitter made of a NiAl needle containing tiny spherical tungsten-carbon precipitates. By field evaporation of such a multiphase alloy, a surface protrusion is formed out of a precipitate, which can act as a small source size field ion emitter. The emission current-voltage characteristics of this emitter were recorded for a variety of parameters. The results obtained suggest that its application as a stable ion source is possible even on long term operation. -- Research highlights: {yields} High brightness gaseous field ion source of precipitation hardened NiAl+W+C emitter. {yields} Emission current-voltage characteristics are recorded for a variety of parameters. {yields} Very small virtual source sizes and energy spreads can be attained. {yields} Results suggest that application as long term stable ion source is possible.

  11. Dielectric influence on IV curve of graphene field effect transistor

    Science.gov (United States)

    Shostachenko, Stanislav A.; Zakharchenko, Roman V.; Zebrev, Gennady I.; Stanishevskiy, Yaroslav M.; Kargin, Nikolay I.

    2016-12-01

    In this article, we have studied the influence of Si3N4 and SiO2 thin film gate dielectrics on the current-voltage characteristics of the graphene-based transistor. The test structure of graphene transistor was fabricated with the top and back gate. Graphene has been produced by chemical vapor deposition, and then transferred to the silicon dioxide on a silicon wafer. The channel of the transistor has been formed by etching in oxygen plasma through a photolithographic mask. Metals electrodes of the drain, source, and gate were deposited by resistive evaporation in a vacuum. It was used titanium / aluminum with a thickness of 50/200 nm. In the case of the back gate, silicon dioxide was used, obtained by thermal oxidation of the silicon substrate. For top gate was used silicon nitride deposited by plasma chemical deposition. It was demonstrated that field effect is more pronounced for the case of SiO2 back gate compare to the Si3N4 top gate. For the SiO2 back gate we have observed that the source- drain current decreases, from 2 mA to 3 mA, with increasing the gate voltage, from 0 to 40 V, at constant source-drain voltage, 2 V. In case of Si3N4 top gate the modulation of source-drain current was not significant for the comparable electric field strength. Based on the value of gate voltage for current minima in transfer function the poor quality of Si3N4 -graphene interface is concluded.

  12. Alle har en historie, IV

    DEFF Research Database (Denmark)

    Ydegaard, Torbjørn

    Alle har en historie IV: Pædagogik med Freedom Writers lader et væld af pædagogiske facetter udspringe af den kendte skole-film Freedom Writers’ scener og handlinger. Der er både fokus på en almen tilgang til pædagogik og på Freedom Writer-metodikken, dels gennem de filmscener, der sættes til...

  13. Switching Characteristics and Analysis of Resonant Tunneling Diodes

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    Resonant tunneling diode (RTD) of AlAs/InGaAs/AlAs double barrier-single well structure was designed and fabricated. The devices showed current-voltage characteristics with peak-valley current ratio of 4: 1 at room temperature. The scattering parameter of RTD was measured by using an HP8510(C) network analyzer. Equivalent circuit parameters were obtained by curve fitting and optimized. The RTD switching time was estimated using the measured capacitance and average negative differential resistance. The minimum rise time of the sample was estimated to be 21 ps.

  14. Charge Transport and Photocurrent Generation Characteristics in Dye Solar Cells Containing Thermally Degraded N719 Dye Molecules

    DEFF Research Database (Denmark)

    Andersen, A. R.; Halme, J.; Lund, T.

    2011-01-01

    product (N719-TBP) on the performance parameters of the cells. Two types of dyed solar cells, based on either N719 or N719-TBP, have been characterized employing standard current-voltage (I-V) performance test, UV-vis optical spectroscopy, incident photon to current efficiency (IPCE), and electrochemical...... impedance spectroscopy (EIS) methods. The performance tests show a drastic efficiency reduction of similar to 50% in the N719-TBP containing cells as compared to N719-dyed cells. The lower performance of N719-TBP was caused by lower overall light harvesting efficiency due to ca. 30 nm blue shift...

  15. Temperature dependence of current-and capacitance-voltage characteristics of an Au/4H-SiC Schottky diode

    Science.gov (United States)

    Gülnahar, Murat

    2014-12-01

    In this study, the current-voltage (I-V) and capacitance-voltage (C-V) measurements of an Au/4H-SiC Schottky diode are characterized as a function of the temperature in 50-300 K temperature range. The experimental parameters such as ideality factor and apparent barrier height presents to be strongly temperature dependent, that is, the ideality factor increases and the apparent barrier height decreases with decreasing temperature, whereas the barrier height values increase with the temperature for C-V data. Likewise, the Richardson plot deviates at low temperatures. These anomaly behaviors observed for Au/4H-SiC are attributed to Schottky barrier inhomogeneities. The barrier anomaly which relates to interface of Au/4H-SiC is also confirmed by the C-V measurements versus the frequency measured in 300 K and it is interpreted by both Tung's lateral inhomogeneity model and multi-Gaussian distribution approach. The values of the weighting coefficients, standard deviations and mean barrier height are calculated for each distribution region of Au/4H-SiC using the multi-Gaussian distribution approach. In addition, the total effective area of the patches NAe is obtained at separate temperatures and as a result, it is expressed that the low barrier regions influence meaningfully to the current transport at the junction. The homogeneous barrier height value is calculated from the correlation between the ideality factor and barrier height and it is noted that the values of standard deviation from ideality factor versus q/3kT curve are in close agreement with the values obtained from the barrier height versus q/2kT variation. As a result, it can be concluded that the temperature dependent electrical characteristics of Au/4H-SiC can be successfully commented on the basis of the thermionic emission theory with both models.

  16. Report on the O IV and S IV lines observed by IRIS

    CERN Document Server

    Young, Peter R

    2015-01-01

    The O IV intercombination lines observed by the Interface Region Imaging Spectrograph (IRIS) between 1397 and 1407 A provide useful density diagnostics. This document presents data that address two issues related to these lines: (1) the contribution of S IV to the O IV 1404.8 line; and (2) the range of sensitivity of the O IV 1399.8/1401.2 ratio.

  17. Test Review: Advanced Clinical Solutions for WAIS-IV and WMS-IV

    Science.gov (United States)

    Chu, Yiting; Lai, Mark H. C.; Xu, Yining; Zhou, Yuanyuan

    2012-01-01

    The authors review the "Advanced Clinical Solutions for WAIS-IV and WMS-IV". The "Advanced Clinical Solutions (ACS) for the Wechsler Adult Intelligence Scale-Fourth Edition" (WAIS-IV; Wechsler, 2008) and the "Wechsler Memory Scale-Fourth Edition" (WMS-IV; Wechsler, 2009) was published by Pearson in 2009. It is a clinical tool for extending the…

  18. Test Review: Advanced Clinical Solutions for WAIS-IV and WMS-IV

    Science.gov (United States)

    Chu, Yiting; Lai, Mark H. C.; Xu, Yining; Zhou, Yuanyuan

    2012-01-01

    The authors review the "Advanced Clinical Solutions for WAIS-IV and WMS-IV". The "Advanced Clinical Solutions (ACS) for the Wechsler Adult Intelligence Scale-Fourth Edition" (WAIS-IV; Wechsler, 2008) and the "Wechsler Memory Scale-Fourth Edition" (WMS-IV; Wechsler, 2009) was published by Pearson in 2009. It is a…

  19. Test Review: Advanced Clinical Solutions for WAIS-IV and WMS-IV

    Science.gov (United States)

    Chu, Yiting; Lai, Mark H. C.; Xu, Yining; Zhou, Yuanyuan

    2012-01-01

    The authors review the "Advanced Clinical Solutions for WAIS-IV and WMS-IV". The "Advanced Clinical Solutions (ACS) for the Wechsler Adult Intelligence Scale-Fourth Edition" (WAIS-IV; Wechsler, 2008) and the "Wechsler Memory Scale-Fourth Edition" (WMS-IV; Wechsler, 2009) was published by Pearson in 2009. It is a…

  20. The dependence of C IV broad absorption line properties on accompanying Si IV and Al III absorption: relating quasar-wind ionization levels, kinematics, and column densities

    Energy Technology Data Exchange (ETDEWEB)

    Filiz Ak, N.; Brandt, W. N.; Schneider, D. P.; Trump, J. R. [Department of Astronomy and Astrophysics, Pennsylvania State University, University Park, PA 16802 (United States); Hall, P. B. [Department of Physics and Astronomy, York University, 4700 Keele Street, Toronto, Ontario M3J 1P3 (Canada); Anderson, S. F. [Astronomy Department, University of Washington, Seattle, WA 98195 (United States); Hamann, F. [Department of Astronomy, University of Florida, Gainesville, FL 32611-2055 (United States); Myers, Adam D. [Department of Physics and Astronomy, University of Wyoming, Laramie, WY 82071 (United States); Pâris, I. [Departamento de Astronomía, Universidad de Chile, Casilla 36-D, Santiago (Chile); Petitjean, P. [Institut d' Astrophysique de Paris, Universite Paris 6, F-75014 Paris (France); Ross, Nicholas P. [Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, CA 94720 (United States); Shen, Yue [Carnegie Observatories, 813 Santa Barbara Street, Pasadena, CA 91101 (United States); York, Don, E-mail: nfilizak@astro.psu.edu [Department of Astronomy and Astrophysics, The University of Chicago, Chicago, IL 60637 (United States)

    2014-08-20

    We consider how the profile and multi-year variability properties of a large sample of C IV Broad Absorption Line (BAL) troughs change when BALs from Si IV and/or Al III are present at corresponding velocities, indicating that the line of sight intercepts at least some lower ionization gas. We derive a number of observational results for C IV BALs separated according to the presence or absence of accompanying lower ionization transitions, including measurements of composite profile shapes, equivalent width (EW), characteristic velocities, composite variation profiles, and EW variability. We also measure the correlations between EW and fractional-EW variability for C IV, Si IV, and Al III. Our measurements reveal the basic correlated changes between ionization level, kinematics, and column density expected in accretion-disk wind models; e.g., lines of sight including lower ionization material generally show deeper and broader C IV troughs that have smaller minimum velocities and that are less variable. Many C IV BALs with no accompanying Si IV or Al III BALs may have only mild or no saturation.

  1. IVS contribution to ITRF2014

    Science.gov (United States)

    Bachmann, Sabine; Thaller, Daniela; Roggenbuck, Ole; Lösler, Michael; Messerschmitt, Linda

    2016-07-01

    Every few years the International Terrestrial Reference System (ITRS) Center of the International Earth Rotation and Reference Systems Service (IERS) decides to generate a new version of the International Terrestrial Reference Frame (ITRF). For the upcoming ITRF2014 the official contribution of the International VLBI Service for Geodesy and Astrometry (IVS) comprises 5796 combined sessions in SINEX file format from 1979.6 to 2015.0 containing 158 stations, overall. Nine AC contributions were included in the combination process, using five different software packages. Station coordinate time series of the combined solution show an overall repeatability of 3.3 mm for the north, 4.3 mm for the east and 7.5 mm for the height component over all stations. The minimum repeatabilities are 1.5 mm for north, 2.1 mm for east and 2.9 mm for height. One of the important differences between the IVS contribution to the ITRF2014 and the routine IVS combination is the omission of the correction for non-tidal atmospheric pressure loading (NTAL). Comparisons between the amplitudes of the annual signals derived by the VLBI observations and the annual signals from an NTAL model show that for some stations, NTAL has a high impact on station height variation. For other stations, the effect of NTAL is low. Occasionally other loading effects have a higher influence (e.g. continental water storage loading). External comparisons of the scale parameter between the VTRF2014 (a TRF based on combined VLBI solutions), DTRF2008 (DGFI-TUM realization of ITRS) and ITRF2008 revealed a significant difference in the scale. A scale difference of 0.11 ppb (i.e. 0.7 mm on the Earth's surface) has been detected between the VTRF2014 and the DTRF2008, and a scale difference of 0.44 ppb (i.e. 2.8 mm on the Earth's surface) between the VTRF2014 and ITRF2008. Internal comparisons between the EOP of the combined solution and the individual solutions from the AC contributions show a WRMS in X- and Y-Pole between

  2. Effect of growth temperature on photoluminescence and piezoelectric characteristics of ZnO nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Water, Walter [Institute of Electro-Optical and Materials Science, National Formosa University, Yunlin 632, Taiwan (China); Fang, T.-H. [Institute of Electro-Optical and Materials Science, National Formosa University, Yunlin 632, Taiwan (China); Institute of Mechanical and Electromechanical Engineering, National Formosa University, Yunlin 632, Taiwan (China)], E-mail: fang.tehua@msa.hinet.net; Ji, L.-W.; Lee, C.-C. [Institute of Electro-Optical and Materials Science, National Formosa University, Yunlin 632, Taiwan (China)

    2009-02-25

    ZnO nanowire arrays were synthesized on Au-coated silicon (1 0 0) substrates by using vapour-liquid-solid process in this work. The effect of growth temperatures on the crystal structure and the surface morphology of ZnO nanowires were investigated by X-ray diffraction and scanning electron microscope. The absorption and optical characteristics of the nanowires were examined by Ultraviolet/Visible spectroscopy, and photoluminescence, respectively. The photoluminescence results exhibited ZnO nanowires had an ultraviolet and blue emission at 383 and 492 nm. Then a nanogenerator with ZnO nanowire arrays was fabricated and demonstrated Schottky-like current-voltage characteristics.

  3. BCS class IV drugs: Highly notorious candidates for formulation development.

    Science.gov (United States)

    Ghadi, Rohan; Dand, Neha

    2017-02-28

    BCS class IV drugs (e.g., amphotericin B, furosemide, acetazolamide, ritonavir, paclitaxel) exhibit many characteristics that are problematic for effective oral and per oral delivery. Some of the problems associated include low aqueous solubility, poor permeability, erratic and poor absorption, inter and intra subject variability and significant positive food effect which leads to low and variable bioavailability. Also, most of the class IV drugs are substrate for P-glycoprotein (low permeability) and substrate for CYP3A4 (extensive pre systemic metabolism) which further potentiates the problem of poor therapeutic potential of these drugs. A decade back, extreme examples of class IV compounds were an exception rather than the rule, yet today many drug candidates under development pipeline fall into this category. Formulation and development of an efficacious delivery system for BCS class IV drugs are herculean tasks for any formulator. The inherent hurdles posed by these drugs hamper their translation to actual market. The importance of the formulation composition and design to successful drug development is especially illustrated by the BCS class IV case. To be clinically effective these drugs require the development of a proper delivery system for both oral and per oral delivery. Ideal oral dosage forms should produce both a reasonably high bioavailability and low inter and intra subject variability in absorption. Also, ideal systems for BCS class IV should produce a therapeutic concentration of the drug at reasonable dose volumes for intravenous administration. This article highlights the various techniques and upcoming strategies which can be employed for the development of highly notorious BCS class IV drugs. Some of the techniques employed are lipid based delivery systems, polymer based nanocarriers, crystal engineering (nanocrystals and co-crystals), liquisolid technology, self-emulsifying solid dispersions and miscellaneous techniques addressing the P

  4. Rorschach correlates of the DSM-IV histrionic personality disorder.

    Science.gov (United States)

    Blais, M A; Hilsenroth, M J; Fowler, J C

    1998-04-01

    Rorschach assessment data have long been rationally linked to the psychiatric condition of hysteria. This study represents the first empirical attempt to explore the associations among select Rorschach variables, the Diagnostic and Statistical Manual of Mental Disorders (4th ed. [DSM-IV]; American Psychiatric Association, 1994) Histrionic Personality Disorder (HPD) criteria, and two self-report measures of hysteria. We correlated four Rorschach variables with total symptom scores for DSM-IV Cluster B Personality Disorders (Borderline, Antisocial, Narcissistic, and Histrionic). We found two Rorschach variables, FC + CF + C and T (Exner, 1993), to be significantly and meaningfully correlated with both the DSM-IV HPD total score (number of criteria) and the individual HPD criteria. Although not significantly associated with the HPD total score, Denial (DEN; Lerner & Lerner, 1980) was associated with one individual HPD criterion. Furthermore, DEN was significantly correlated with the MMPI-2 Hysteria (Hy) scale. The results are reviewed in terms of their clinical utility and the insights they offer into the psychological characteristics of the DSM-IV HPD.

  5. Deconstructing the DSM-IV-TR: a critical perspective.

    Science.gov (United States)

    Warelow, Philip; Holmes, Colin A

    2011-12-01

    This paper examines and offers a critique of the Diagnostic and Statistical Manual of Mental Disorders, 4th Edition, Text Revision (DSM-IV-TR), underlying principles and assumptions, and the nature and consequences of its nosological framework. The reason for this critique is to look at the rationale for some of the diagnostic categories and also why some categories are retained, including some of the long-standing diagnostic groups, such as schizophrenia. It is not the intention here to rehearse the problems of biological psychiatric thinking, nor argue the strengths and weaknesses of the DSM-IV-TR in its definitions and descriptions of particular syndromes and illnesses. The ideas presented here derive from a range of previous research that argued that the DSM-IV-TR colludes in a system of psychiatric care in which all people, by virtue of characteristically human foibles and idiosyncrasies, are potentially classifiable into a variety of diagnostic mental health categories. In the present study, it was argued that because of resource constraints, professional dispute, and public concern, the major criterion for attracting a formal diagnosis is not classifiability according to the DSM-IV-TR, but rather, that of 'social risk', defined in terms of risk to oneself and/or others and embodying obvious social control functions. Here, we expand and develop some of these ideas, and relate them more specifically to insights offered by critical or deconstructive psychology and the development of the forthcoming the DSM-V.

  6. A cerium(IV)-carbon multiple bond

    Energy Technology Data Exchange (ETDEWEB)

    Gregson, Matthew; Lu, Erli; McMaster, Jonathan; Lewis, William; Blake, Alexander J.; Liddle, Stephen T. [Nottingham Univ. (United Kingdom). School of Chemistry

    2013-12-02

    Straightforward access to a cerium(IV)-carbene complex was provided by one-electron oxidation of an anionic ''ate'' cerium(III)-carbene precursor, thereby avoiding decomposition reactions that plague oxidations of neutral cerium(III) compounds. The cerium(IV)-carbene complex is the first lanthanide(IV)-element multiple bond and involves a twofold bonding interaction of two electron pairs between cerium and carbon. [German] Auf direktem Wege zu einem Cer(IV)-Carbenkomplex gelangt man durch die Einelektronenoxidation einer anionischen Carben-Cerat(III)-Vorstufe. So werden Zersetzungsprozesse vermieden, die die Oxidation neutraler Cer(III)-Verbindungen erschweren. Der Cer(IV)-Carbenkomplex enthaelt die erste Lanthanoid(IV)-Element-Mehrfachbindung; dabei binden Cer und Kohlenstoff ueber zwei Elektronenpaare.

  7. 碱基对组分、电极位能及界面耦合对DNA分子I-V特性的影响%Base pairs composition,on-site energies of electrode and DNA-metal coupling effects on current-voltage characteristic of DNA molecule

    Institute of Scientific and Technical Information of China (English)

    马松山; 朱佳; 徐慧; 郭锐

    2010-01-01

    在紧束缚近似下,利用传输矩阵方法,计算研究了碱基对组分、金属电极位能及DNA分子与电极耦合强度对DNA分子I-V特征的影响.计算结果表明:由单一碱基对构成的DNA分子的饱和电流强度远大于由两种碱基对按一定组分随机分布的DNA分子的饱和电流强度,且当DNA分子中两种碱基对的含量相等时,其饱和电流强度最小.同时,富含C-G碱基对的DNA分子比富含A-T碱基对的DNA分子的电子输运能力大.金属电极位能对DNA分子电子输运的影响体现在两方面,当偏压较小时,电极位能具有阻碍电荷注入的效果,当偏压较大时,电极位能有增强电荷注入的效果.当耦合强度与DNA分子碱基对间交互作用相等时,发生共振电子注入,体系饱和电流强度最大.当耦合强度大于DNA分子碱基对间交互作用时,随着耦合强度的增大,电荷注入能力减小,其饱和电流强度亦相应减小.

  8. Growth and Characteristic of Amorphous Nano-Granular TeO2-V2O5-NiO Thin Films

    Science.gov (United States)

    Hosseinzadeh, Sh.; Rahmati, A.; Bidadi, H.

    2016-12-01

    TeO2-V2O5-NiO thin films were deposited using thermal evaporation from 40TeO2-(60-y)V2O5-yNiO (y=0-30mol%) target. Structural analysis of the films was identified by X-ray diffractometry (XRD) and scanning electron microscopy (SEM). The amorphous TeO2-V2O5-NiO films have nanosized clear grain structure and sharp grain boundaries. DC conductivity and current-voltage (I-V) characteristic of TeO2-V2O5-NiO thin films were measured in the temperature range of 300-423K. As nickel oxide (NiO) content increases, the DC conductivity decreases up to two orders in value (10-9-10-11Sṡcm-1). Temperature dependence of conductivity is described using the small polaron hopping (SPH) model as well. Poole-Frenkel effect is observed at high external electric field. The optical absorption spectra of the TeO2-V2O5-NiO thin films were recorded in the wavelength range of 380-1100nm. The absorption coefficient revealed bandgap shrinkage (3.01-2.3eV) and band tail widening, due to an increase in NiO content. Energy dispersive X-ray spectroscopy (EDX) was used to determine elemental composition. In TeO2-V2O5-NiO thin films, the NiO content is around fifth of the initial target.

  9. Synthesis and Characterization of Tin(IV) Oxide Obtained by Chemical Vapor Deposition Method

    Science.gov (United States)

    Nagirnyak, Svitlana V.; Lutz, Victoriya A.; Dontsova, Tatiana A.; Astrelin, Igor M.

    2016-07-01

    The effect of precursors on the characteristics of tin oxide obtained by chemical vapor deposition (CVD) method was investigated. The synthesis of nanosized tin(IV) oxide was carried out with the use of two different precursors: tin(II) oxalate obtained using tin chloride(II) and oxalic acid; tin(II) oxalate obtained using tin chloride(II); and ammonium oxalate. The synthesized tin(IV) oxide samples were studied by electron microscopy, X-ray diffraction and optical spectra. The lattice parameters of tin(IV) oxide samples were defined, the bandgap of samples were calculated.

  10. Stark broadening of B IV spectral lines

    CERN Document Server

    Dimitrijevic, Milan S; Simic, Zoran; Kovacevic, Andjelka; Sahal-Brechot, Sylvie

    2016-01-01

    Stark broadening parameters for 157 multiplets of helium like boron (B IV) have been calculated using the impact semiclassical perturbation formalism. Obtained results have been used to investigate the regularities within spectral series. An example of the influence of Stark broadening on B IV lines in DO white dwarfs is given.

  11. IVS Working Group 4: VLBI Data Structures

    Science.gov (United States)

    Gipson, John

    2010-01-01

    In 2007 the IVS Directing Board established IVS Working Group 4 on VLBI Data Structures. This note discusses the current VLBI data format, goals for a new format, the history and formation of the Working Group, and a timeline for the development of a new VLBI data format.

  12. Metsahovi Radio Observatory - IVS Network Station

    Science.gov (United States)

    Uunila, Minttu; Zubko, Nataliya; Poutanen, Markku; Kallunki, Juha; Kallio, Ulla

    2013-01-01

    In 2012, Metsahovi Radio Observatory together with Finnish Geodetic Institute officially became an IVS Network Station. Eight IVS sessions were observed during the year. Two spacecraft tracking and one EVN X-band experiment were also performed. In 2012, the Metsahovi VLBI equipment was upgraded with a Digital Base Band Converter, a Mark 5B+, a FILA10G, and a FlexBuff.

  13. Thermodynamic data for predicting concentrations of Th(IV), U(IV), Np(IV), and Pu(IV) in geologic environments

    Energy Technology Data Exchange (ETDEWEB)

    Rai, Dhanpat; Roa, Linfeng; Weger, H.T.; Felmy, A.R. [Battelle, Pacific Northwest National Laboratory (PNNL) (United States); Choppin, G.R. [Florida State University (United States); Yui, Mikazu [Waste Isolation Research Division, Tokai Works, Japan Nuclear Cycle Development Inst., Tokai, Ibaraki (Japan)

    1999-01-01

    This report provides thermodynamic data for predicting concentrations of Th(IV), U(IV), Np(IV), and Pu(IV) in geologic environments, and contributes to an integration of the JNC chemical thermodynamic database, JNC-TDB (previously PNC-TDB), for the performance analysis of geological isolation system for high-level radioactive wastes. Thermodynamic data for the formation of complexes or compounds with hydroxide, chloride, fluoride, carbonate, nitrate, sulfate and phosphate are discussed in this report. Where data for specific actinide(IV) species was lacking, the data were selected based on chemical analogy to other tetravalent actinides. In this study, the Pitzer ion-interaction model is used to extrapolate thermodynamic constants to zero ionic strength at 25degC. (author)

  14. Interchange of L polymerase protein between two strains of viral hemorrhagic septicemia virus (VHSV) genotype IV alters temperature sensitivities in vitro.

    Science.gov (United States)

    Kim, Sung-Hyun; Yusuff, Shamila; Vakharia, Vikram N; Evensen, Øystein

    2015-01-02

    Viral hemorrhagic septicemia virus (VHSV) has four genotypes (I-IV) and sub-lineages within genotype I and IV. Using a reverse genetics approach, we explored the importance of the L gene for growth characteristics at different temperatures following interchange of the L gene within genotype IV (IVa and IVb) strains. VHSV strains harboring heterologous L gene were recovered and we show that the L gene determines growth characteristics at different temperatures in permissive cell lines.

  15. Dissimilatory Fe(III) and Mn(IV) reduction.

    Science.gov (United States)

    Lovley, Derek R; Holmes, Dawn E; Nevin, Kelly P

    2004-01-01

    Dissimilatory Fe(III) and Mn(IV) reduction has an important influence on the geochemistry of modern environments, and Fe(III)-reducing microorganisms, most notably those in the Geobacteraceae family, can play an important role in the bioremediation of subsurface environments contaminated with organic or metal contaminants. Microorganisms with the capacity to conserve energy from Fe(III) and Mn(IV) reduction are phylogenetically dispersed throughout the Bacteria and Archaea. The ability to oxidize hydrogen with the reduction of Fe(III) is a highly conserved characteristic of hyperthermophilic microorganisms and one Fe(III)-reducing Archaea grows at the highest temperature yet recorded for any organism. Fe(III)- and Mn(IV)-reducing microorganisms have the ability to oxidize a wide variety of organic compounds, often completely to carbon dioxide. Typical alternative electron acceptors for Fe(III) reducers include oxygen, nitrate, U(VI) and electrodes. Unlike other commonly considered electron acceptors, Fe(III) and Mn(IV) oxides, the most prevalent form of Fe(III) and Mn(IV) in most environments, are insoluble. Thus, Fe(III)- and Mn(IV)-reducing microorganisms face the dilemma of how to transfer electrons derived from central metabolism onto an insoluble, extracellular electron acceptor. Although microbiological and geochemical evidence suggests that Fe(III) reduction may have been the first form of microbial respiration, the capacity for Fe(III) reduction appears to have evolved several times as phylogenetically distinct Fe(III) reducers have different mechanisms for Fe(III) reduction. Geobacter species, which are representative of the family of Fe(III) reducers that predominate in a wide diversity of sedimentary environments, require direct contact with Fe(III) oxides in order to reduce them. In contrast, Shewanella and Geothrix species produce chelators that solubilize Fe(III) and release electron-shuttling compounds that transfer electrons from the cell surface to

  16. Surprising Coordination Geometry Differences in Ce(IV)- and Pu(IV)-Maltol Complexes

    Energy Technology Data Exchange (ETDEWEB)

    Lawrence Berkeley National Laboratory; Raymond, Kenneth; Szigethy, Geza; Xu, Jide; Gorden, Anne E.V.; Teat, Simon J.; Shuh, David K.; Raymond, Kenneth N.

    2008-02-12

    As part of a study to characterize the detailed coordination behavior of Pu(IV), single crystal X-ray diffraction structures have been determined for Pu(IV) and Ce(IV) complexes with the naturally-occurring ligand maltol (3-hydroxy-2-methyl-pyran-4-one) and its derivative bromomaltol (5-bromo-3-hydroxy-2-methyl-pyran-4-one). Although Ce(IV) is generally accepted as a structural analog for Pu(IV), and the maltol complexes of these two metals are isostructural, the corresponding bromomaltol complexes are strikingly different with respect to ligand orientation about the metal ion: All complexes exhibit trigonal dodecahedral coordination geometry but the Ce(IV)-bromomaltol complex displays an uncommon ligand arrangement not mirrored in the Pu(IV) complex, although the two metal species are generally accepted to be structural analogs.

  17. Structural and Electrical Properties of TiO2 Thin Film Derived from Sol-gel Method using Titanium (IV Butoxide

    Directory of Open Access Journals (Sweden)

    Isrihetty Senain

    2010-12-01

    Full Text Available Fabrication of titanium dioxide (TiO2 thin film on microscope glass using sol-gel method has been studied intensively. The starting materials were titanium (IV butoxide, ethanol, acetic acid, triton x-100, hydrochloric acid and deionized water. The materials were mixed together to form the sols. Then, the heat and ageing treatment was applied to form stable sols. The sols were then spin coated on the glass substrate to form the homogenous and transparent TiO2 thin film. The TiO2 thin film was coated at several layers using specific conditions. To evaluate the performance of thin film, the crystallinity of the thin film was determined by using the x-ray diffractometer  (XRD. The change on the surface morphology was observed using atomic force microscope (AFM. The electrical property of the thin film was determined by doing the current-voltage (I-V analysis on the thin film. It has been successfully shown that the anatase crystalline phase was observed when the TiO2 thin film was heated at 500°C. The roughness and the crystalline phase of TiO2 thin film changed drastically with the growth conditions. Finally, the effect of film preparation to the film resistivity also showed a critical aspect where we should take into account during the preparation of TiO2 thin film.

  18. Electrical characterization of gold-DNA-gold structures in presence of an external magnetic field by means of I-V curve analysis.

    Science.gov (United States)

    Khatir, Nadia Mahmoudi; Banihashemian, Seyedeh Maryam; Periasamy, Vengadesh; Ritikos, Richard; Abd Majid, Wan Haliza; Abdul Rahman, Saadah

    2012-01-01

    This work presents an experimental study of gold-DNA-gold structures in the presence and absence of external magnetic fields with strengths less than 1,200.00 mT. The DNA strands, extracted by standard method were used to fabricate a Metal-DNA-Metal (MDM) structure. Its electric behavior when subjected to a magnetic field was studied through its current-voltage (I-V) curve. Acquisition of the I-V curve demonstrated that DNA as a semiconductor exhibits diode behavior in the MDM structure. The current versus magnetic field strength followed a decreasing trend because of a diminished mobility in the presence of a low magnetic field. This made clear that an externally imposed magnetic field would boost resistance of the MDM structure up to 1,000.00 mT and for higher magnetic field strengths we can observe an increase in potential barrier in MDM junction. The magnetic sensitivity indicates the promise of using MDM structures as potential magnetic sensors.

  19. The Dependence of C IV Broad Absorption Line Properties on Accompanying Si IV and Al III Absorption: Relating Quasar-Wind Ionization Levels, Kinematics, and Column Densities

    CERN Document Server

    Ak, N Filiz; Hall, P B; Schneider, D P; Trump, J R; Anderson, S F; Hamann, F; Myers, Adam D; Paris, I; Petitjean, P; Ross, Nicholas P; Shen, Yue; York, Don

    2014-01-01

    We consider how the profile and multi-year variability properties of a large sample of C IV Broad Absorption Line (BAL) troughs change when BALs from Si IV and/or Al III are present at corresponding velocities, indicating that the line-of-sight intercepts at least some lower ionization gas. We derive a number of observational results for C IV BALs separated according to the presence or absence of accompanying lower ionization transitions, including measurements of composite profile shapes, equivalent width (EW), characteristic velocities, composite variation profiles, and EW variability. We also measure the correlations between EW and fractional-EW variability for C IV, Si IV, and Al III. Our measurements reveal the basic correlated changes between ionization level, kinematics, and column density expected in accretion-disk wind models; e.g., lines-of-sight including lower ionization material generally show deeper and broader C IV troughs that have smaller minimum velocities and that are less variable. Many C ...

  20. APACHE IV is superior to MELD scoring system in predicting prognosis in patients after orthotopic liver transplantation.

    Science.gov (United States)

    Hu, Yueyun; Zhang, Xianling; Liu, Yuan; Yan, Jun; Li, Tiehua; Hu, Ailing

    2013-01-01

    This study aims to compare the efficiency of APACHE IV with that of MELD scoring system for prediction of the risk of mortality risk after orthotopic liver transplantation (OLT). A retrospective cohort study was performed based on a total of 195 patients admitted to the ICU after orthotopic liver transplantation (OLT) between February 2006 and July 2009 in Guangzhou, China. APACHE IV and MELD scoring systems were used to predict the postoperative mortality after OLT. The area under the receiver operating characteristic curve (AUC) and the Hosmer-Lemeshow C statistic were used to assess the discrimination and calibration of APACHE IV and MELD, respectively. Twenty-seven patients died during hospitalization with a mortality rate of 13.8%. The mean scores of APACHE IV and MELD were 42.32 ± 21.95 and 18.09 ± 10.55, respectively, and APACHE IV showed better discrimination than MELD; the areas under the receiver operating characteristic curve for APACHE IV and MELD were 0.937 and 0.694 (P APACHE IV was relatively high. Both models were well-calibrated (The Hosmer-Lemeshow C statistics were 1.568 and 6.818 for APACHE IV and MELD, resp.; P > 0.05 for both). The respective Youden indexes of APACHE IV, MELD, and combination of APACHE IV with MELD were 0.763, 0.430, and 0.545. The prognostic value of APACHE IV is high but still underestimates the overall hospital mortality, while the prognostic value of MELD is poor. The function of the APACHE IV is, thus, better than that of the MELD.

  1. Atmosphere of Mars - Mariner IV models compared.

    Science.gov (United States)

    Eshleman, V. R.; Fjeldbo, G.; Fjeldbo, W. C.

    1966-01-01

    Mariner IV models of three Mars atmospheric layers analogous to terrestrial E, F-1 and F-2 layers, considering relative mass densities, temperatures, carbon dioxide photodissociation and ionization profile

  2. IV&V Project Assessment Process Validation

    Science.gov (United States)

    Driskell, Stephen

    2012-01-01

    The Space Launch System (SLS) will launch NASA's Multi-Purpose Crew Vehicle (MPCV). This launch vehicle will provide American launch capability for human exploration and travelling beyond Earth orbit. SLS is designed to be flexible for crew or cargo missions. The first test flight is scheduled for December 2017. The SLS SRR/SDR provided insight into the project development life cycle. NASA IV&V ran the standard Risk Based Assessment and Portfolio Based Risk Assessment to identify analysis tasking for the SLS program. This presentation examines the SLS System Requirements Review/System Definition Review (SRR/SDR), IV&V findings for IV&V process validation correlation to/from the selected IV&V tasking and capabilities. It also provides a reusable IEEE 1012 scorecard for programmatic completeness across the software development life cycle.

  3. Periodontal Disease Part IV: Periodontal Infections

    OpenAIRE

    Turnbull, Robert S.

    1988-01-01

    In Part IV of this article, the author describes two periodontal infections, acute necrotizing ulcerative gingivitis (trench mouth) and periodontal abscess, both acute painful conditions for which patients may seek advice from their family physician rather than their dentist.

  4. Quantum Chemical Investigations on Electron Transport Characteristics of Porphyrin and Metal-porphyrin

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    Recently, molecular electronics has become increasingly important. By applying the hybrid density functional theory coupled with the Green's function method, the current-voltage characteristics of the molecular junctions composed of gold-porphyrin-gold and gold-copper porphyrin-gold were investigated. The role of the metal coordination effect in organic molecular electron transport was highlighted. Although the thresholds of the bias voltage for both molecules were almost the same, approximately 0.9 V, the metal compound showed a larger increase in current because of the metal-coordination-enhanced molecule-electrode coupling in the frontier molecular orbitals.

  5. Characteristics of radio-frequency atmospheric pressure dielectric-barrier discharge with dielectric electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Hussain, S., E-mail: shussain@uos.edu.pk, E-mail: shussainuos@yahoo.com; Qazi, H. I. A.; Badar, M. A. [Department of Physics, University of Sargodha, 40100 Sargodha (Pakistan)

    2014-03-15

    An experimental investigation to characterize the properties and highlight the benefits of atmospheric pressure radio-frequency dielectric-barrier discharge (rf DBD) with dielectric electrodes fabricated by anodizing aluminium substrate is presented. The current-voltage characteristics and millisecond images are used to distinguish the α and γ modes. This atmospheric rf DBD is observed to retain the discharge volume without constriction in γ mode. Optical emission spectroscopy demonstrates that the large discharge current leads to more abundant reactive species in this plasma source.

  6. Switching Characteristics of Phase Change Memory Cell Integrated with Metal-Oxide Semiconductor Field Effect Transistor

    Institute of Scientific and Technical Information of China (English)

    XU Cheng; CHEN Bomy; LIU Bo; CHEN Yi-Feng; LIANG Shuang; SONG Zhi-Tang; FENG Song-Lin; WAN Xu-Dong; YANG Zuo-Ya; XIE Joseph

    2008-01-01

    A Ge2Sb2Te5 based phase change memory device cell integrated with metal-oxide semiconductor field effect transistor (MOSFET) is fabricated using standard 0.18 μm complementary metal-oxide semiconductor process technology.It shows steady switching characteristics in the dc current-voltage measurement.The phase changing phenomenon from crystalline state to amorphous state with a voltage pulse altitude of 2.0 V and pulse width of 50 ns is also obtained.These results show the feasibility of integrating phase change memory cell with MOSFET.

  7. Charge storage characteristics and tunneling mechanism of amorphous Ge-doped HfOx films

    Science.gov (United States)

    Qiu, X. Y.; Zhang, S. Y.; Zhang, T.; Wang, R. X.; Li, L. T.; Zhang, Y.; Dai, J. Y.

    2016-09-01

    Amorphous Ge-doped HfOx films have been deposited on p-Si(100) substrates by means of RF magnetron sputtering. Microstructural investigations reveal the partial oxidation of doped Ge atoms in the amorphous HfOx matrix and the existence of HfSiOx interfacial layer. Capacitance-voltage hysteresis of the Ag-/Ge-doped HfOx/Si/Ag memory capacitor exhibits a memory window of 3.15 V which can maintain for >5 × 104 cycles. Current-voltage characteristics reveal that Poole-Frenkel tunneling is responsible for electron transport in the Ge-doped HfOx film.

  8. Comparison of Russian and IVS intensive series

    Science.gov (United States)

    Kurdubov, S. L.

    2013-08-01

    The article presents results of first comparison the Russian National UT1-UTC estimation program Ru-U and IVS-intensive international campaign. It is shown that the Ru-U sessions are performing with good accuracy and results can be included into international VLBI data processing scheme. Comparison of different distributions shows that the problem of correlation lack between single delay formal errors and UT1 estimations are presented both in Ru-U and IVS-intensive series.

  9. Observational properties of decameter type IV bursts

    Science.gov (United States)

    Melnik, Valentin; Brazhenko, Anatoly; Rucker, Helmut; Konovalenko, Alexander; Briand, Carine; Dorovskyy, Vladimir; Zarka, Philippe; Frantzusenko, Anatoly; Panchenko, Michael; Poedts, Stefan; Zaqarashvili, Teimuraz; Shergelashvili, Bidzina

    2013-04-01

    Oscillations of decameter type IV bursts were registered during observations of solar radio emission by UTR-2, URAN-2 and NDA in 2011-2012. Large majority of these bursts were accompanied by coronal mass ejections (CMEs), which were observed by SOHO and STEREO in the visible light. Only in some cases decameter type IV bursts were not associated with CMEs. The largest periods of oscillations P were some tens of minutes. There were some modes of long periods of oscillations simultaneously. Periods of oscillations in flux and in polarization profiles were close. Detailed properties of oscillations at different frequencies were analyzed on the example of two type IV bursts. One of them was observed on April 7, 2011 when a CME happened. Another one (August 1, 2011) was registered without any CME. The 7 April type IV burst had two periods in the frames 75-85 and 35-85 minutes. Interesting feature of these oscillations is decreasing periods with time. The observed decreasing rates dP/dt equaled 0.03-0.07. Concerning type IV burst observed on August 1, 2011 the period of its oscillations increases from 17 min. at 30 MHz to 44 min. at 10 MHz. Connection of type IV burst oscillations with oscillations of magnetic arches and CMEs at corresponding altitudes are discussed. The work is fulfilled in the frame of FP7 project "SOLSPANET".

  10. Nonoperative management for patients with grade IV blunt hepatic trauma

    Directory of Open Access Journals (Sweden)

    Zago Thiago

    2012-08-01

    Full Text Available Abstract Introduction The treatment of complex liver injuries remains a challenge. Nonoperative treatment for such injuries is increasingly being adopted as the initial management strategy. We reviewed our experience, at a University teaching hospital, in the nonoperative management of grade IV liver injuries with the intent to evaluate failure rates; need for angioembolization and blood transfusions; and in-hospital mortality and complications. Methods This is a retrospective analysis conducted at a single large trauma centre in Brazil. All consecutive, hemodynamically stable, blunt trauma patients with grade IV hepatic injury, between 1996 and 2011, were analyzed. Demographics and baseline characteristics were recorded. Failure of nonoperative management was defined by the need for surgical intervention. Need for angioembolization and transfusions, in-hospital death, and complications were also assessed Results Eighteen patients with grade IV hepatic injury treated nonoperatively during the study period were included. The nonoperative treatment failed in only one patient (5.5% who had refractory abdominal pain. However, no missed injuries and/or worsening of bleeding were observed during the operation. None of the patients died nor need angioembolization. No complications directly related to the liver were observed. Unrelated complications to the liver occurred in three patients (16.7%; one patient developed a tracheal stenosis (secondary to tracheal intubation; one had pleural effusion; and one developed an abscess in the pleural cavity. The hospital length of stay was on average 11.56 days. Conclusions In our experience, nonoperative management of grade IV liver injury for stable blunt trauma patients is associated with high success rates without significant complications.

  11. A Study on Agreement Rate Between Psychiatric Residents in Diagnosing Axis IV. In DSM-IV Classficatic System

    Directory of Open Access Journals (Sweden)

    H. Shahrokhi

    2004-07-01

    Full Text Available Diagnosis of environmental and psychosocial problems in psychiatric patients is essential because of their significant role in causing or exacerbating psychiatric disorders. This study was carried out to assess the consensus rate in diagnosing axis IV (environmental and psychosocial problems in DSM-IV system of classification among psychiatric residents.In this study one hundred and seventeen psychiatric patients were examined in daily morning in Razi Mental Hospital in Tabriz. The patients were evaluated individually by residents in regard to mental status and axis IV problems. The obtained datas were analysed by descriptive and inferential statistical methods.Results of the study revealed that consensus rate among residents in assessment of environmental and psychosocial problem(s was low (ICC : 0.22. Demographic characteristics of the patients did not explain difference between residents. Sex and familiarity of residents with Azari Language were significantly important regarding diagnostic difference, so that consensus rate in female residents was more than male ones and in Azari speaking residents was more than non-Azari speaking ones. No part of mental status examination was remarkable in explaining diagnostic differences. Diagnoses in axis I and III were recognized as important elements in explaining the differences.Based on result of this study diagnosis of environmental and psychosocial problems in psychiatric patients by residents generally is not reliable and the issue warrant further attention.

  12. High resolution observations with Artemis-IV and the NRH. I. Type IV associated narrow-band bursts

    CERN Document Server

    Bouratzis, C; Alissandrakis, C E; Preka-Papadema, P; Moussas, X; Caroubalos, C; Tsitsipis, P; Kontogeorgos, A

    2016-01-01

    Narrow band bursts appear on dynamic spectra from microwave to decametric frequencies as fine structures with very small duration and bandwidth. They are thought to mark small scale magnetic reconnection. We analyzed 27 metric type-IV events with narrow band bursts observed by the ARTEMIS-IV radiospectrograph in 30/6/1999-1/8/2010. We examined the morphological characteristics of isolated narrow-band bursts and groups or chains of spikes. The events were recorded with the SAO (10 ms cadence) receiver of ARTEMIS-IV in the 270-450 MHz range. We measured the duration, spectral width, and frequency drift of ~12000 individual narrow-band bursts, groups, and chains. Spike sources were imaged with the NRH for the event of 21 April 2003. The mean duration of individual bursts at fixed frequency was ~100 ms, while the instantaneous relative bandwidth was ~2%. Some bursts had measurable frequency drift, positive or negative. Often spikes appeared in chains, which were closely spaced in time (column chains) or in freque...

  13. Oxyhydroxy Silicate Colloids: A New Type of Waterborne Actinide(IV) Colloids

    Science.gov (United States)

    Weiss, Stephan; Hennig, Christoph; Brendler, Vinzenz; Ikeda‐Ohno, Atsushi

    2016-01-01

    Abstract At the near‐neutral and reducing aquatic conditions expected in undisturbed ore deposits or in closed nuclear waste repositories, the actinides Th, U, Np, and Pu are primarily tetravalent. These tetravalent actinides (AnIV) are sparingly soluble in aquatic systems and, hence, are often assumed to be immobile. However, AnIV could become mobile if they occur as colloids. This review focuses on a new type of AnIV colloids, oxyhydroxy silicate colloids. We herein discuss the chemical characteristics of these colloids and the potential implication for their environmental behavior. The binary oxyhydroxy silicate colloids of AnIV could be potentially more mobile as a waterborne species than the well‐known mono‐component oxyhydroxide colloids. PMID:27957406

  14. Synthesis and characterization of chiral thorium(IV) and uranium(IV) benzamidinate complexes

    Energy Technology Data Exchange (ETDEWEB)

    Schoene, Sebastian; Maerz, Juliane; Kaden, Peter; Patzschke, Michael; Ikeda-Ohno, Atsushi [Helmholtz-Zentrum Dresden-Rossendorf e.V., Dresden (Germany). Chemistry of the F-Elements

    2017-06-01

    Two chiral benzamidinate complexes of tetravalent actinides (Th(IV) and U(IV)) were synthesized using a salt metathesis reaction of the corresponding actinide(IV) tetrachlorides and the potassium salt of the chiral benzamidine (S,S)-N,N-Bis-(1-phenylethyl)-benzamidine ((S)-HPEBA). The structure of the complexes was determined with single crystal X-ray diffraction. These are the first examples of chiral amidinate complexes of actinides.

  15. Axis IV--psychosocial and environmental problems--in the DSM-IV.

    Science.gov (United States)

    Ramirez, A; Ekselius, L; Ramklint, M

    2013-11-01

    The aim of this study was to further explore the properties of axis IV in the Diagnostic and statistical manual of mental disorders, 4th edition (DSM-IV). In a naturalistic cross-sectional design, a group (n = 163) of young (18-25 years old) Swedish psychiatric outpatients was assessed according to DSM-IV. Psychosocial and environmental problems/axis IV were evaluated through structured interviewing by a social worker and by self-assessment on a questionnaire. Reliability between professional assessment and self-assessment of axis IV was examined. Concurrent validity of axis IV was also examined. Reliability between professional and self-assessed axis IV was fair to almost perfect, 0.31-0.83, according to prevalence and bias-adjusted kappa. Categories of psychosocial stress and environmental problems were related to the presence of axis I disorders, co-morbidity, personality disorders and decreasing Global Assessment of Functioning (GAF) values. The revised axis IV according to DSM-IV seems to have concurrent validity, but is still hampered by limited reliability.

  16. 非晶Pr0.7Sr0.3MnO3薄膜的电阻开关性质%Resistive switching characteristics of amorphou Pr0.7Sr0.3MnO3 thin films

    Institute of Scientific and Technical Information of China (English)

    刘晓娜; 张婷; 孙新格; 丁玲红; 张伟风

    2011-01-01

    Amorphous Pro.7Sro.3MnO3 (a-PSMO) thin films were deposited on SnO2:F (FTO) substrate by pulsed laser deposition (PLD). The resistive switching characteristics of the device with Au / a-PSMO / FTO sandwich structure were studied. The results show that: when low voltage is applied, the current-voltage (I-V) loop of a-PSMO films can only be found in the negative voltage region; while with the increase of applied voltage, I-V loops appear in both the negative and positive voltage regions and intersect with each other at around 0 V and -1 V. Analysis show that the electron movement in a-PSMO films is controlled by the Poole-Frenkel (P-F) and Ohmic conduction mechanisms, and the I-V characteristics of a-PSMO films is a result of electron trapping and freeing in the interface state with a large amount of defects.%采用脉冲激光沉积法在SnO2:F( FTO)衬底上制备了非晶Pr0.7Sr0.3MnO3(PSMO)薄膜,并对具有Au/非晶PSMO/FTO三明治结构的器件进行了阻变特性测试.结果显示:在低电压范围扫描时,非晶PSMO薄膜的电流-电压(I-V)回线只在负电压区域呈现;随着电压的增加,薄膜的I-V回线出现在整个电压范围内,并在“0V”和“-1 V”左右交叉了两次.分析表明:Poole-Frenkel (P-F)和Ohmic输运机制对非晶PSMO薄膜中的电荷输运起决定作用,包含高密度缺陷的界面态对栽流子的俘获与去俘获导致了非晶PSMO薄膜的I-V特性.

  17. Overview of phase IV clinical trials for postmarket drug safety surveillance: a status report from the ClinicalTrials.gov registry.

    Science.gov (United States)

    Zhang, Xinji; Zhang, Yuan; Ye, Xiaofei; Guo, Xiaojing; Zhang, Tianyi; He, Jia

    2016-11-23

    Phase IV trials are often used to investigate drug safety after approval. However, little is known about the characteristics of contemporary phase IV clinical trials and whether these studies are of sufficient quality to advance medical knowledge in pharmacovigilance. We aimed to determine the fundamental characteristics of phase IV clinical trials that evaluated drug safety using the ClinicalTrials.gov registry data. A data set of 19 359 phase IV clinical studies registered in ClinicalTrials.gov was downloaded. The characteristics of the phase IV trials focusing on safety only were compared with those evaluating both safety and efficacy. We also compared the characteristics of the phase IV trials in three major therapeutic areas (cardiovascular diseases, mental health and oncology). Multivariable logistic regression was used to evaluate factors associated with the use of blinding and randomisation. A total of 4772 phase IV trials were identified, including 330 focusing on drug safety alone and 4392 evaluating both safety and efficacy. Most of the phase IV trials evaluating drug safety (75.9%) had enrolment gov registry were dominated by small trials that might not have sufficient power to detect less common adverse events. An adequate sample size should be emphasised for phase IV trials with safety surveillance as main task. Published by the BMJ Publishing Group Limited. For permission to use (where not already granted under a licence) please go to http://www.bmj.com/company/products-services/rights-and-licensing/.

  18. On the stabilization of niobium(V) solutions by zirconium(IV) and hafnium(IV)

    DEFF Research Database (Denmark)

    Sørensen, E.; Bjerre, A.B.

    1992-01-01

    Niobium cannot be separated from zirconium or hafnium when these elements occur together in solution with common anions such as chloride and sulphate. This is ascribed to the co-polymerization of niobium(V) and the hydrolysed ionic species of zirconium(IV) and hafnium(IV) to form colloidal...

  19. Confirmatory Factor Analysis of the WAIS-IV and WMS-IV in Older Adults

    Science.gov (United States)

    Miller, Delyana I.; Davidson, Patrick S. R.; Schindler, Dwayne; Messier, Claude

    2013-01-01

    New editions of the Wechsler Adult Intelligence and Memory scales are now available. Yet, given the significant changes in these new releases and the skepticism that has met them, independent evidence on their psychometric properties is much needed but currently lacking. We administered the WAIS-IV and the Older Adult version of the WMS-IV to 145…

  20. Confirmatory Factor Analysis of the WAIS-IV and WMS-IV in Older Adults

    Science.gov (United States)

    Miller, Delyana I.; Davidson, Patrick S. R.; Schindler, Dwayne; Messier, Claude

    2013-01-01

    New editions of the Wechsler Adult Intelligence and Memory scales are now available. Yet, given the significant changes in these new releases and the skepticism that has met them, independent evidence on their psychometric properties is much needed but currently lacking. We administered the WAIS-IV and the Older Adult version of the WMS-IV to 145…

  1. The Berkeley SETI program - SERENDIP IV instrumentation

    Science.gov (United States)

    Werthimer, Dan; Bowyer, Stuart; Ng, David; Donnelly, Charles; Cobb, Jeff; Lampton, Michael; Airieau, Sabine

    1997-01-01

    We discuss the hardware design of SERENDIP IV, which will be deployed in early 1997 for a 21-cm sky survey at the National Astronomy and Ionospheric Center's 305-m radio telescope in Arecibo, Puerto Rico. SERENDIP IV is a 167 million channel spectrum analyzer, covering a 100-Mhz bandwidth, with 0.6-Hz resolution and a 1.7-s integration time. SERENDIP IV's modular design incorporates a bank of digital mixers and filters to separate the 100 MHz band into 40 2.5 MHz subbands. Each 2.5 MHz subband is further broken down into 0.6 Hz bins by means of a four million point fast Fourier transform. The resulting power spectra are analyzed by 40 high-speed processors. Narrowband signals having power significantly above background noise levels are recorded along with telescope coordinates, time, and frequency. The data are sent in real time to Berkeley for analysis.

  2. Seafloor earthquake measurement system, SEMS IV

    Energy Technology Data Exchange (ETDEWEB)

    Platzbecker, M.R.; Ehasz, J.P.; Franco, R.J.

    1997-07-01

    Staff of the Telemetry Technology Development Department (2664) have, in support of the U.S. Interior Department Mineral Management Services (MMS), developed and deployed the Seafloor Earthquake Measurement System IV (SEMS IV). The result of this development project is a series of three fully operational seafloor seismic monitor systems located at offshore platforms: Eureka, Grace, and Irene. The instrument probes are embedded from three to seven feet into the seafloor and hardwired to seismic data recorders installed top side at the offshore platforms. The probes and underwater cables were designed to survive the seafloor environment with an operation life of five years. The units have been operational for two years and have produced recordings of several minor earthquakes in that time. Sandia Labs will transfer operation of SEMS IV to MMS contractors in the coming months. 29 figs., 25 tabs.

  3. Oxochloroalkoxide of the Cerium (IV and Titanium (IV as oxides precursor

    Directory of Open Access Journals (Sweden)

    Machado Luiz Carlos

    2002-01-01

    Full Text Available The Cerium (IV and Titanium (IV oxides mixture (CeO2-3TiO2 was prepared by thermal treatment of the oxochloroisopropoxide of Cerium (IV and Titanium (IV. The chemical route utilizing the Cerium (III chloride alcoholic complex and Titanium (IV isopropoxide is presented. The compound Ce5Ti15Cl16O30 (iOPr4(OH-Et15 was characterized by elemental analysis, FTIR and TG/DTG. The X-ray diffraction patterns of the oxides resulting from the thermal decomposition of the precursor at 1000 degreesC for 36 h indicated the formation of cubic cerianite (a = 5.417Å and tetragonal rutile (a = 4.592Å and (c = 2.962 Å, with apparent crystallite sizes around 38 and 55nm, respectively.

  4. Host Cell Contact-Induced Transcription of the Type IV Fimbria Gene Cluster of Actinobacillus pleuropneumoniae

    NARCIS (Netherlands)

    Boekema, B.K.H.L.; Putten, J.P.M.; Stockhofe-Zurwieden, N.; Smith, H.E.

    2004-01-01

    Type IV pili (Tfp) of gram-negative species share many characteristics, including a common architecture and conserved biogenesis pathway. Much less is known about the regulation of Tfp expression in response to changing environmental conditions. We investigated the diversity of Tfp regulatory system

  5. Functions in Free-Format RPG IV

    CERN Document Server

    Martin, Jim

    2009-01-01

    Written especially for programmers adopting a free-format style, this manual explores the role of functions in writing RPG IV programs. Demonstrating the potential of functions, many topics are explored such as details about existing RPG IV built-in functions, writing new functions, using ILE concepts to use C functions, and utilizing IBM API's functions. Explaining how to write small programs, either as sub-procedures or modules, and how to gather those parts together to make programs that are easy to write and maintain, this is a natural next step for programmers familiar with a free-format

  6. Polityka religijna Ptolemeusza IV Filopatora : wybrane aspekty

    OpenAIRE

    Grabowski, Tomasz

    2014-01-01

    Religion was very highly placed in the politics and propaganda of the Ptolemaic dynasty. Ptolemy IV Philopator belonged to the kings of Egypt who were particularly active in this field. The person of Ptolemy I Soter, who was the founder of the dynasty, was of considerable importance in his policy. Among many other things, Ptolemy IV established his eponymous cult in Ptolemais. He also invested the dynastic cult with its final form by incorporating into it the cult of Theoi Soters (Ptolemy I a...

  7. THE EFFECT OF STANUM (IV AND GERMANІUM (IV COORDINATION COMPOUNDS ON Bacillus thuringiensis var. israelensis ІМV В-7465 PEPTIDASES ACTIVITY

    Directory of Open Access Journals (Sweden)

    Nidialkova N. А.

    2015-08-01

    Full Text Available The purpose of the research was to investigate the influence of stanum (IV and germanium (IV coordination compounds on peptidases 1 and 2 of Bacillus thuringiensis var. israelensis ІМV В-7465 activity. The study of coordination compounds effect on peptidase activity was carried out by complexes with the enzymes incubation and residual activity to the collagen, elastin and fibrin determination. It was revealed the regularity in the influence of different structure complex compounds on peptidases of B. thuringiensis var. israelensis ІМV В-7465 activity. The stanum (IV complexes with salicyloylhydrazones of aromatic aldehydes increase collagenase and elastase activities. Substituents replacement in aldehyde fragment of stanum (IV with isonicotinoylhydrazones of aromatic aldehydes complexes by the less polar ones contributed to increase of elastase activity of both enzymes while an absence of substituents enables to increase peptidase 2 fibrinolytic activity. The complexes of germanіum (IV with isonicotinoylhydrazone of salicylic aldehyde which contain Zn and Co, increased collagenase activity of the peptidase 1 as well as elastase and fibrinolytic activities of the peptidase 2. In general, all tested complexes may be considered as peptidase effectors of B. thuringiensis var. israelensis ІМV В-7465. A difference of complexes effect on activities of the both enzymes is due to the characteristics of the structure of coordination compounds.

  8. The behavior of quasar C IV emission-line properties with orientation

    CERN Document Server

    Runnoe, Jessie C; DiPompeo, M A; Shang, Zhaohu

    2013-01-01

    With a quasar sample designed for studying orientation effects, we investigate the orientation dependence of characteristics of the C IV 1549 broad emission line in approximately 50 Type 1 quasars with z=0.1-1.4. Orientation is measured for the sample via radio core dominance. In our analysis we include measurements of the continuum luminosity and the optical-to-X-ray spectral slope, spectral properties commonly included in the suite known as "Eigenvector 1", and the full-width at half maximum, full-width at one-quarter-maximum, shape, blueshift, and equivalent width of the C IV broad emission line. We also investigate a new prescription that we recently developed for predicting the velocity line width of the H-beta broad emission line based on the velocity line width of the C IV line and the ratio of continuum subtracted peak fluxes of Si IV + O IV] at 1400 A to C IV. In addition to a correlation analysis of the ultraviolet spectral properties and radio core dominance, we provide composite spectra of edge-on...

  9. What doesn’t work with Phase IV studies? A real experience from an Ethics Committee

    Directory of Open Access Journals (Sweden)

    F. Grigoletto

    2013-05-01

    Full Text Available Phase IV studies are conducted in real-life conditions to expand the knowledge on the efficacy and safety of an approved drug. Carried out either in hospital or general practice setting, they can be distinguished in Phase IV trials and post-marketing surveillance studies. Limited information is available in Italy about their characteristics as the proportion of observational studies, the average size and the importance of the non-sponsored research. In order to investigate these and other features, we analysed 1,881 protocols presented to the Ethics Committee of a large size University Hospital in the decade 1999-2008. Out of the 188 (10% Phase IV studies, about three fourths were controlled clinical trials, 48.4% had an active drug and 16.0% a placebo as comparator; only 8.5% was presented as observational. Most of the Phase IV studies could be classifiable as Phase IIIb. The median sample size value was 200 patients, while the Phase III studies reported a median of 360 patients, this contradicting the “large-scale” characteristic of the Phase IV studies reported in the literature.

  10. Approximating a DSM-5 Diagnosis of PTSD Using DSM-IV Criteria

    Science.gov (United States)

    Rosellini, Anthony J.; Stein, Murray B.; Colpe, Lisa J.; Heeringa, Steven G.; Petukhova, Maria V.; Sampson, Nancy A.; Schoenbaum, Michael; Ursano, Robert J.; Kessler, Ronald C.

    2015-01-01

    Background Diagnostic criteria for DSM-5 posttraumatic stress disorder (PTSD) are in many ways similar to DSM-IV criteria, raising the possibility that it might be possible to closely approximate DSM-5 diagnoses using DSM-IV symptoms. If so, the resulting transformation rules could be used to pool research data based on the two criteria sets. Methods The Pre-Post Deployment Study (PPDS) of the Army Study to Assess Risk and Resilience in Servicemembers (Army STARRS) administered a blended 30-day DSM-IV and DSM-5 PTSD symptom assessment based on the civilian PTSD Checklist for DSM-IV (PCL-C) and the PTSD Checklist for DSM-5 (PCL-5). This assessment was completed by 9,193 soldiers from three US Army Brigade Combat Teams approximately three months after returning from Afghanistan. PCL-C items were used to operationalize conservative and broad approximations of DSM-5 PTSD diagnoses. The operating characteristics of these approximations were examined compared to diagnoses based on actual DSM-5 criteria. Results The estimated 30-day prevalence of DSM-5 PTSD based on conservative (4.3%) and broad (4.7%) approximations of DSM-5 criteria using DSM-IV symptom assessments were similar to estimates based on actual DSM-5 criteria (4.6%). Both approximations had excellent sensitivity (92.6-95.5%), specificity (99.6-99.9%), total classification accuracy (99.4-99.6%), and area under the receiver operating characteristic curve (0.96-0.98). Conclusions DSM-IV symptoms can be used to approximate DSM-5 diagnoses of PTSD among recently-deployed soldiers, making it possible to recode symptom-level data from earlier DSM-IV studies to draw inferences about DSM-5 PTSD. However, replication is needed in broader trauma-exposed samples to evaluate the external validity of this finding. PMID:25845710

  11. Dipeptidyl peptidase-IV (DPP-IV inhibitory activity of parotid exudate of Bufo melanostictus

    Directory of Open Access Journals (Sweden)

    Allenki Venkatesham

    2009-01-01

    Full Text Available Type 2 diabetes arises as a result of β-cell failure combined with concomitant insulin resistance. Glucagon-like peptide-1 is a gastrointestinal hormone that is released postprandially from the L cells of the gut and exerts a glucose- dependent and direct insulinotropic effect on the pancreatic β cell. Which activate adenylate cyclase and enhances insulin secretion. GLP-1 is rapidly degraded by DPP-IV to GLP-1(9-37 amide following release from gut L cells. GLP-1 directly enhances glucose-dependent insulin secretion via an increase in β-cell cAMP. Dipeptidyl peptidase IV (DPP-IV is a plasma membrane glycoprotein ectopeptidase. In mammals, DPP-IV was widely expressed on the surface of endothelial and epithelial cells and highest levels in humans have been reported to occur in the intestine, bone marrow and kidney. Inhibiting DPP-IV reduces its rapid degradation of GLP-1, increasing circulating levels of the active hormone in vivo and prolonging its beneficial effects. The IC 50 value of parotid exudate was found to be 9.4 μg/ml. The maximum % inhibition (61.8 was showed at a concentration of 12μg/ml. Parotid exudate through inhibition of DPP-IV, improves glucose tolerance and enhances insulin secretion. DPP-IV inhibitors are a novel class of oral hypoglycemic agents with a potential to improve pancreatic beta cell function and the clinical course of type 2 diabetes.

  12. Industrial Waste Landfill IV upgrade package

    Energy Technology Data Exchange (ETDEWEB)

    1994-03-29

    The Y-12 Plant, K-25 Site, and ORNL are managed by DOE`s Operating Contractor (OC), Martin Marietta Energy Systems, Inc. (Energy Systems) for DOE. Operation associated with the facilities by the Operating Contractor and subcontractors, DOE contractors and the DOE Federal Building result in the generation of industrial solid wastes as well as construction/demolition wastes. Due to the waste streams mentioned, the Y-12 Industrial Waste Landfill IV (IWLF-IV) was developed for the disposal of solid industrial waste in accordance to Rule 1200-1-7, Regulations Governing Solid Waste Processing and Disposal in Tennessee. This revised operating document is a part of a request for modification to the existing Y-12 IWLF-IV to comply with revised regulation (Rule Chapters 1200-1-7-.01 through 1200-1-7-.08) in order to provide future disposal space for the ORR, Subcontractors, and the DOE Federal Building. This revised operating manual also reflects approved modifications that have been made over the years since the original landfill permit approval. The drawings referred to in this manual are included in Drawings section of the package. IWLF-IV is a Tennessee Department of Environmental and Conservation/Division of Solid Waste Management (TDEC/DSWM) Class 11 disposal unit.

  13. Painlevé IV coherent states

    Energy Technology Data Exchange (ETDEWEB)

    Bermudez, David, E-mail: david.bermudez@weizmann.ac.il [Department of Physics of Complex Systems, Weizmann Institute of Science, Rehovot 76100 (Israel); Departamento de Física, Cinvestav, A.P. 14-740, 07000 México D.F. (Mexico); Contreras-Astorga, Alonso, E-mail: aloncont@iun.edu [Department of Mathematics and Actuarial Science, Indiana University Northwest, 3400 Broadway, Gary IN 46408 (United States); Departamento de Física, Cinvestav, A.P. 14-740, 07000 México D.F. (Mexico); Fernández C, David J., E-mail: david@fis.cinvestav.mx [Departamento de Física, Cinvestav, A.P. 14-740, 07000 México D.F. (Mexico)

    2014-11-15

    A simple way to find solutions of the Painlevé IV equation is by identifying Hamiltonian systems with third-order differential ladder operators. Some of these systems can be obtained by applying supersymmetric quantum mechanics (SUSY QM) to the harmonic oscillator. In this work, we will construct families of coherent states for such subset of SUSY partner Hamiltonians which are connected with the Painlevé IV equation. First, these coherent states are built up as eigenstates of the annihilation operator, then as displaced versions of the extremal states, both involving the related third-order ladder operators, and finally as extremal states which are also displaced but now using the so called linearized ladder operators. To each SUSY partner Hamiltonian corresponds two families of coherent states: one inside the infinite subspace associated with the isospectral part of the spectrum and another one in the finite subspace generated by the states created through the SUSY technique. - Highlights: • We use SUSY QM to obtain Hamiltonians with third-order differential ladder operators. • We show that these systems are related with the Painlevé IV equation. • We apply different definitions of coherent states to these Hamiltonians using the third-order ladder operators and some linearized ones. • We construct families of coherent states for such systems, which we called Painlevé IV coherent states.

  14. Bis(4-methylpiperidinium hexachloridostannate(IV

    Directory of Open Access Journals (Sweden)

    Madeleine Helliwell

    2008-04-01

    Full Text Available The crystal structure of the title compound, (C6H14N2[SnCl6], is built of 4-methylpiperidinium cations, occupying special positions on the mirror plane, and hexachloridostannate(IV anions on a special position of 2/m symmetry. The ions are linked via N—H...Cl hydrogen bonds into chains running along the b axis.

  15. TFRC—IVS Flow Control Algorithm

    Institute of Scientific and Technical Information of China (English)

    HEKaijian; LINYaping; YANGAng

    2003-01-01

    This paper investigates the TCP (Trans-mission Control Protocol) friendliness of multicast video-conferencing systems. Through the analysis and simulation experiments it is shown that the slow response to network state changes and the fixed rate adjustment process lead to TCP unfriendliness in the bandwidth sharing. Therefore,this paper proposes a new TCP friendly flow control al-gorithm called TFRC-IVS flow control algorithm for the current best-effort Internet. TFRC-IVS (TCP-Friendly Rate Control--INRIA Videoconferencing System) algo-rithm utilizes TCP friendly control function derived from complex TCP model to calculate TCP friendly sending rate.Simulation results show that TFRC-IVS flow control algorithm improves the smoothness of transmission rates and converges quickly to the stable sending rate. In addi-tion, the TCP friendly control function in TFRC-IVS flow control algorithm ensures the TCP friendliness of video flows and fair bandwidth allocation with TCP flows, which the traditional static rate adjustment algorithm lacks.

  16. Electrical Characteristics of Superconducting Ti Transition Edge Sensors

    Science.gov (United States)

    Zhang, W.; Zhong, J. Q.; Miao, W.; Wang, Z.; Liu, D.; Yao, Q. J.; Shi, S. C.; Chen, T. J.; Wang, M. J.

    2016-07-01

    We have designed and fabricated superconducting Ti transition edge sensors (TES) with different microbridge lengths varying from 1 to 6 \\upmu m. The current-voltage characteristics of the fabricated Ti TESs are measured at different bath temperatures using a commercial SQUID amplifier. The thermal conductance ( G) is found to be about 300 pW/K for a 2.6-\\upmu m-long device. In addition, the effective response time measured with a current pulse signal is about 3 \\upmu s, and decreases with increasing the bias voltage because of negative electro-thermal feedback. The obtained electrical noise equivalent power from the measured current noise is about 4 × 10^{-17} W/Hz^{0.5}, which is sufficiently low for TeSIA instrument.

  17. Gen IV Materials Handbook Implementation Plan

    Energy Technology Data Exchange (ETDEWEB)

    Rittenhouse, P.; Ren, W.

    2005-03-29

    A Gen IV Materials Handbook is being developed to provide an authoritative single source of highly qualified structural materials information and materials properties data for use in design and analyses of all Generation IV Reactor Systems. The Handbook will be responsive to the needs expressed by all of the principal government, national laboratory, and private company stakeholders of Gen IV Reactor Systems. The Gen IV Materials Handbook Implementation Plan provided here addresses the purpose, rationale, attributes, and benefits of the Handbook and will detail its content, format, quality assurance, applicability, and access. Structural materials, both metallic and ceramic, for all Gen IV reactor types currently supported by the Department of Energy (DOE) will be included in the Gen IV Materials Handbook. However, initial emphasis will be on materials for the Very High Temperature Reactor (VHTR). Descriptive information (e.g., chemical composition and applicable technical specifications and codes) will be provided for each material along with an extensive presentation of mechanical and physical property data including consideration of temperature, irradiation, environment, etc. effects on properties. Access to the Gen IV Materials Handbook will be internet-based with appropriate levels of control. Information and data in the Handbook will be configured to allow search by material classes, specific materials, specific information or property class, specific property, data parameters, and individual data points identified with materials parameters, test conditions, and data source. Details on all of these as well as proposed applicability and consideration of data quality classes are provided in the Implementation Plan. Website development for the Handbook is divided into six phases including (1) detailed product analysis and specification, (2) simulation and design, (3) implementation and testing, (4) product release, (5) project/product evaluation, and (6) product

  18. Study on temperature characteristics of organic light-emitting diodes based on tris-(8-hydroxylquinoline)-aluminum

    Institute of Scientific and Technical Information of China (English)

    SUO Fan; YU JunSheng; LI WeiZhi; LOU ShuangLing; DENG Jing; JIANG YaDong

    2008-01-01

    Both single-layer and double-layer organic light-emitting devices based on tris-(8-hydroxylquinoline)-aluminum (Alq3) as emitter are fabricated by thermal vacuum deposition. The electroluminescent characteristics of these devices at various temperatures are measured, and the temperature characteristics of device performance are studied. The effect of temperature on device current conduction regime is analyzed in detail. The results show that the current-voltage (Ⅰ-Ⅴ) characteristics of devices are in good agreement with the theoretical prediction of trapped charge limited current (TCLC). In addition, both the charge carrier mobility and charge carrier concentration in the organic layer increase with the rise of temperature, which results in the monotonous increase of Alq3 device current. The current conduction mechanisms of two devices at different temperatures are identical, but the exponent m in current-voltage equation changes randomly with temperature. The device luminance increases slightly and the efficiency decreases monotonously due to the aging of Alq3 luminescent properties caused by high temperature. A tiny blue shift can be observed in the electroluminescent (EL) spectra as the temperature increases, and the reduction of device monochromaticity is caused by the intrinsic characteristics of organic semiconductor energy levels.

  19. An exploratory study of the use of the Wechsler Digit-Symbol Incidental Learning procedure with the WAIS-IV.

    Science.gov (United States)

    Ashendorf, Lee

    2012-01-01

    The Wechsler Adult Intelligence Scale-Fourth Edition (WAIS-IV) does not include the optional Incidental Learning procedure for the Digit-Symbol subtest (now simply called Coding) that had been available in the WAIS-Third Edition (WAIS-III). However, the procedure itself has been shown to have some utility in assessment of incidental memory processes. The current study of a mixed clinical outpatient sample (n = 75) sought to identify salient characteristics of the Incidental Learning tasks as applied to WAIS-IV Coding. Findings showed that the Pairing procedure, when applied to the WAIS-IV, has different characteristics than it did with the WAIS-III; it is more difficult overall, and different items tend to be more prominently recalled than others. The Free Recall procedure for the WAIS-IV is comparable to the WAIS-III version in overall difficulty. Implications and implementation of the current findings are discussed.

  20. Adding source positions to the IVS Combination

    Science.gov (United States)

    Bachmann, S.; Thaller, D.

    2016-12-01

    Simultaneous estimation of source positions, Earth orientation parameters (EOPs) and station positions in one common adjustment is crucial for a consistent generation of celestial and terrestrial reference frame (CRF and TRF, respectively). VLBI is the only technique to guarantee this consistency. Previous publications showed that the VLBI intra-technique combination could improve the quality of the EOPs and station coordinates compared to the individual contributions. By now, the combination of EOP and station coordinates is well established within the IVS and in combination with other space geodetic techniques (e.g. inter-technique combined TRF like the ITRF). Most of the contributing IVS Analysis Centers (AC) now provide source positions as a third parameter type (besides EOP and station coordinates), which have not been used for an operational combined solution yet. A strategy for the combination of source positions has been developed and integrated into the routine IVS combination. Investigations are carried out to compare the source positions derived from different IVS ACs with the combined estimates to verify whether the source positions are improved by the combination, as it has been proven for EOP and station coordinates. Furthermore, global solutions of source positions, i.e., so-called catalogues describing a CRF, are generated consistently with the TRF similar to the IVS operational combined quarterly solution. The combined solutions of the source positions time series and the consistently generated TRF and CRF are compared internally to the individual solutions of the ACs as well as to external CRF catalogues and TRFs. Additionally, comparisons of EOPs based on different CRF solutions are presented as an outlook for consistent EOP, CRF and TRF realizations.

  1. WISC-IV Profile in High-Functioning Autism Spectrum Disorders: Impaired Processing Speed Is Associated with Increased Autism Communication Symptoms and Decreased Adaptive Communication Abilities

    Science.gov (United States)

    Oliveras-Rentas, Rafael E.; Kenworthy, Lauren; Roberson, Richard B.; Martin, Alex; Wallace, Gregory L.

    2012-01-01

    Changes in the Wechsler Intelligence Scales for Children-IV (WISC-IV) may affect the IQ profile characteristic of autism spectrum disorders (ASD). Moreover, the association of particular component cognitive abilities (unlike overall IQ) with symptomatology and adaptive functioning in ASD remains unclear. This archival study characterizes the…

  2. The Fouling of Zirconium(IV) Hydrous Oxide–Polyacrylate Dynamically Formed Membranes during the Nanofiltration of Lactic Acid Solutions

    OpenAIRE

    Ewa Polom

    2013-01-01

    The results of investigations of flux decline during nanofiltration (NF) of lactic acid solutions using dynamically formed zirconium(IV) hydrous oxide/polyacrylate membranes (Zr(IV)/PAA) under conditions resulting in low and high lactic acid rejection are reported. The experimental permeate flux versus time curves were analyzed in the frame of resistance in a series model with the aim of developing the characteristic of resistances. Analysis of experimental data and results of calculations sh...

  3. Synthesis and Characterization of Tin(IV) Oxide Obtained by Chemical Vapor Deposition Method

    OpenAIRE

    Nagirnyak, Svitlana V.; Lutz, Victoriya A.; Dontsova, Tatiana A.; Astrelin, Igor M.

    2016-01-01

    The effect of precursors on the characteristics of tin oxide obtained by chemical vapor deposition (CVD) method was investigated. The synthesis of nanosized tin(IV) oxide was carried out with the use of two different precursors: tin(II) oxalate obtained using tin chloride(II) and oxalic acid; tin(II) oxalate obtained using tin chloride(II); and ammonium oxalate. The synthesized tin(IV) oxide samples were studied by electron microscopy, X-ray diffraction and optical spectra. The lattice parame...

  4. Electrical and photoelectrical characteristic investigation of a new generation photodiode based on bromothymol blue dye

    Science.gov (United States)

    Gencer Imer, A.; Tombak, A.; Korkut, A.

    2016-04-01

    Bromothymol blue (BTB) with the molecular formula of C27H28Br2O5S was grown onto p-Si substrate to fabricate heterojunction by spin coating technique. The current voltage (I-V) measurements of diode were carried out in dark and under different illumination intensity at room temperature. The photoelectrical properties of heterojunction based on BTB were investigated using the illumination intensity dependent I-V data. The results showed that photo current of diode increases with the increase in light intensity. Also, the electrical parameters of device were determined via I-V, and capacitance- voltage (C-V), conductance-voltage (G-V) measurements at different frequencies. It is observed that the excess capacitance is created at low frequencies due to the contribution of interface states charge which can follow the alternative current signal to capacitance. It is stated that, both the electrical & photoelectrical parameters of diode can be changed, and also the performance of the device could be affected by the organic thin film interlayer.

  5. Comparison of DSM-IV and DSM-5 criteria for alcohol use disorders in VA primary care patients with frequent heavy drinking enrolled in a trial.

    Science.gov (United States)

    Takahashi, Traci; Lapham, Gwen; Chavez, Laura J; Lee, Amy K; Williams, Emily C; Richards, Julie E; Greenberg, Diane; Rubinsky, Anna; Berger, Douglas; Hawkins, Eric J; Merrill, Joseph O; Bradley, Katharine A

    2017-07-18

    Criteria for alcohol use disorders (AUD) in the Diagnostic and Statistical Manual of Mental Disorders, 5th edition (DSM-5) were intended to result in a similar prevalence of AUD as DSM-IV. We evaluated the prevalence of AUD using DSM-5 and DSM-IV criteria, and compared characteristics of patients who met criteria for: neither DSM-5 nor DSM-IV AUD, DSM-5 alone, DSM-IV alone, or both, among Veterans Administration (VA) outpatients in the Considering Healthier drinking Options In primary CarE (CHOICE) trial. VA primary care patients who reported frequent heavy drinking and enrolled in the CHOICE trial were interviewed at baseline using the DSM-IV Mini International Neuropsychiatric Interview for AUD, as well as questions about socio-demographics, mental health, alcohol craving, and substance use. We compared characteristics across 4 mutually exclusive groups based on DSM-5 and DSM-IV criteria. Of 304 participants, 13.8% met criteria for neither DSM-5 nor DSM-IV AUD; 12.8% met criteria for DSM-5 alone, and 73.0% met criteria for both DSM-IV and DSM-5. Only 1 patient (0.3%) met criteria for DSM-IV AUD alone. Patients meeting both DSM-5 and DSM-IV criteria had more negative drinking consequences, mental health symptoms and self-reported readiness to change compared with those meeting DSM-5 criteria alone or neither DSM-5 nor DSM-IV criteria. In this sample of primary care patients with frequent heavy drinking, DSM-5 identified 13% more patients with AUD than DSM-IV. This group had a lower mental health symptom burden and less self-reported readiness to change compared to those meeting criteria for both DSM-IV and DSM-5 AUD. Trial Registration ClinicalTrials.gov NCT01400581. 2011 February 17.

  6. Shunt and series resistance of photovoltaic module evaluated from the I-V curve; I-V tokusei kara hyokashita taiyo denchi no shunt teiko to chokuretsu teiko

    Energy Technology Data Exchange (ETDEWEB)

    Asano, K.; Kawamura, H.; Yamanaka, S.; Kawamura, H.; Ono, H. [Meijo University, Nagoya (Japan)

    1997-11-25

    With an objective of discussing I-V characteristics when a shadow has appeared on part of a photovoltaic module, evaluations were given as a first stage of the study on saturation current, shunt resistance and series resistance for the solar cell module. As a result of measuring change in amount of power generated in a sunny day with a shadow appearing over the solar cell module, reduction in power generation capability of about 23% was verified. In other words, the I-V characteristics of the solar cell module change largely because of existence of the shadow caused on the module. The I-V characteristics curve may be expressed and calculated as a function of the shunt resistance and series resistance. By curve-fitting measurement data for a case of changing insolation without existence of partial shadow, values of the shunt resistance and series resistance were derived. As a result, it was found that the calculations agree well with measurements. It was made also clear that each parameter shows temperature dependence. 6 refs., 10 figs., 1 tab.

  7. Annotations on Mexico's WISC-IV: a validity study.

    Science.gov (United States)

    Fina, Anthony D; Sánchez-Escobedo, Pedro; Hollingworth, Liz

    2012-01-01

    This project seeks to provide evidence on the internal structure of the Escala Wechsler de Inteligencia para Niños-IV (EWIN-IV; Wechsler, 2007a ) through a confirmatory factor analysis and intercorrelational study. Also provided is information on the adaptation process and other sources of validity evidence in support of the EWIN-IV norms. The standardization data for the EWIN-IV were used for all analyses. The factor loadings and correlational patterns found on the EWIN-IV are comparable to those seen in the American versions of the test. The proposed factor and scoring structure of the EWIN-IV was supported.

  8. Comparison of DSM-IV and DSM-5 criteria for alcohol use disorders in VA primary care patients with frequent heavy drinking enrolled in a trial

    OpenAIRE

    Takahashi, Traci; Lapham, Gwen; Chavez, Laura J.; Lee, Amy K; Williams, Emily C.; Richards, Julie E.; Greenberg, Diane; Rubinsky, Anna; Berger, Douglas; Hawkins, Eric J.; Merrill, Joseph O; Bradley, Katharine A.

    2017-01-01

    Background Criteria for alcohol use disorders (AUD) in the Diagnostic and Statistical Manual of Mental Disorders, 5th edition (DSM-5) were intended to result in a similar prevalence of AUD as DSM-IV. We evaluated the prevalence of AUD using DSM-5 and DSM-IV criteria, and compared characteristics of patients who met criteria for: neither DSM-5 nor DSM-IV AUD, DSM-5 alone, DSM-IV alone, or both, among Veterans Administration (VA) outpatients in the Considering Healthier drinking Options In prim...

  9. Fluctuations in type IV pilus retraction

    CERN Document Server

    Linden, M; Jonsson, A B; Wallin, M; Linden, Martin; Johansson, Emil; Jonsson, Ann-Beth; Wallin, Mats

    2005-01-01

    The type IV pilus retraction motor is found in many important bacterial pathogens. It is the strongest known linear motor protein and is required for bacterial infectivity. We characterize the dynamics of type IV pilus retraction in terms of a stochastic chemical reaction model. We find that a two state model can describe the experimental force velocity relation and qualitative dependence of ATP concentration. The results indicate that the dynamics is limited by an ATP-dependent step at low load and a force-dependent step at high load, and that at least one step is effectively irreversible in the measured range of forces. The irreversible nature of the sub-step(s) lead to interesting predictions for future experiments: We find different parameterizations with mathematically identical force velocity relations but different fluctuations (diffusion constant). We also find a longer elementary step compared to an earlier analysis, which agrees better with known facts about the structure of the pilus filament and e...

  10. [Fe IV] Emission in Ionized Nebulae

    Directory of Open Access Journals (Sweden)

    M. Rodríguez

    2003-01-01

    Full Text Available Se presentan los resultados de un análisis de la emisión en [Fe IV] en varias nebulosas ionizadas, basado en nuevas identificaciones y medidas anteriores de líneas de [Fe IV]. Las abundancias de Fe obtenidas al sumar las abundancias de los iones relevantes (principalmente Fe++ y Fe3+ resultan ser menores, por factores en el rango 2.6-5.9, que las abundancias implicadas por las líneas de [Fe III] y un factor de corrección por la ionizacion obtenido con modelos de ionizacion. Se discuten las posibles razones de esta discrepancia así como las implicaciones que tiene para nuestro entendimiento tanto de la evolución del polvo en nebulosas ionizadas como de la historia química de galaxias de baja metalicidad.

  11. Group IV nanotube transistors for next generation ubiquitous computing

    KAUST Repository

    Fahad, Hossain M.

    2014-06-04

    Evolution in transistor technology from increasingly large power consuming single gate planar devices to energy efficient multiple gate non-planar ultra-narrow (< 20 nm) fins has enhanced the scaling trend to facilitate doubling performance. However, this performance gain happens at the expense of arraying multiple devices (fins) per operation bit, due to their ultra-narrow dimensions (width) originated limited number of charges to induce appreciable amount of drive current. Additionally arraying degrades device off-state leakage and increases short channel characteristics, resulting in reduced chip level energy-efficiency. In this paper, a novel nanotube device (NTFET) topology based on conventional group IV (Si, SiGe) channel materials is discussed. This device utilizes a core/shell dual gate strategy to capitalize on the volume-inversion properties of an ultra-thin (< 10 nm) group IV nanotube channel to minimize leakage and short channel effects while maximizing performance in an area-efficient manner. It is also shown that the NTFET is capable of providing a higher output drive performance per unit chip area than an array of gate-all-around nanowires, while maintaining the leakage and short channel characteristics similar to that of a single gate-all-around nanowire, the latter being the most superior in terms of electrostatic gate control. In the age of big data and the multitude of devices contributing to the internet of things, the NTFET offers a new transistor topology alternative with maximum benefits from performance-energy efficiency-functionality perspective. © (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

  12. Dipyridinium tribromidochloridobis(4-chlorophenylstannate(IV

    Directory of Open Access Journals (Sweden)

    Kong Mun Lo

    2009-06-01

    Full Text Available The tin atom in the substituted ammonium stannate(IV, (C5H6N2[SnBr3(C6H4Cl2Cl], lies on a center of symmetry in a distorted octahedral coordination geometry. Each independent halogen site is occupied by bromine and chlorine anions in an approximate 3:1 ratio. The pyridinium cation forms a hydrogen bond to only one of the halogen atoms.

  13. What Is New in Rome IV

    Science.gov (United States)

    Schmulson, Max J; Drossman, Douglas A

    2017-01-01

    Functional gastrointestinal disorders (FGIDs) are diagnosed and classified using the Rome criteria; the criteria may change over time as new scientific data emerge. The Rome IV was released in May 2016. The aim is to review the main changes in Rome IV. FGIDs are now called disorders of gut-brain interaction (DGBI). Rome IV has a multicultural rather than a Western-culture focus. There are new chapters including multicultural, age-gender-women’s health, intestinal microenvironment, biopsychosocial, and centrally mediated disorders. New disorders have been included although not truly FGIDs, but fit the new definition of DGBI including opioid-induced gastrointestinal hyperalgesia, opioid-induced constipation, and cannabinoid hyperemesis. Also, new FGIDs based on available evidence including reflux hypersensitivity and centrally mediated abdominal pain syndrome. Using a normative survey to determine the frequency of normal bowel symptoms in the general population changes in the time frame for diagnosis were introduced. For irritable bowel syndrome (IBS) only pain is required and discomfort was eliminated because it is non-specific, having different meanings in different languages. Pain is now related to bowel movements rather than just improving with bowel movements (ie, can get worse with bowel movement). Functional bowel disorders (functional diarrhea, functional constipation, IBS with predominant diarrhea [IBS-D], IBS with predominant constipation [IBS-C], and IBS with mixed bowel habits) are considered to be on a continuum rather than as independent entities. Clinical applications such as diagnostic algorithms and the Multidimensional Clinical Profile have been updated. The new Rome IV iteration is evidence-based, multicultural oriented and with clinical applications. As new evidence become available, future updates are expected. PMID:28274109

  14. Soome-ugri IV maailmakongressi kunstiprogramm

    Index Scriptorium Estoniae

    2004-01-01

    Soome-ugri IV maailmakongressi kultuuriprogrammi raames toimub Sagadis Tiiu Kirsipuu kureeritud puuskulptuuri sümpoosion "Ilmapuu". 8. augustist on soome-ugri kunstnikud Anatoli Stepanov, Nikolai Bõkov, Marja-Liisa Mäki-Penttilä, Jakov Jakovlev, Reino Saijets, Jozsef Lukacs, Anatoli Punegov, Pjotr Rjabov, Elo Liiv ja Urmas Rauba teinud puuskulptuure, mida eksponeeritakse kongressi toimumise ajal Tallinnas. Urmas Sisaski kontsert mõisapargis

  15. Examining Computational Assumptions For Godiva IV

    Energy Technology Data Exchange (ETDEWEB)

    Kirkland, Alexander Matthew [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Jaegers, Peter James [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

    2016-08-11

    Over the course of summer 2016, the effects of several computational modeling assumptions with respect to the Godiva IV reactor were examined. The majority of these assumptions pertained to modeling errors existing in the control rods and burst rod. The Monte Carlo neutron transport code, MCNP, was used to investigate these modeling changes, primarily by comparing them to that of the original input deck specifications.

  16. Clinical application of antenatal genetic diagnosis of osteogenesis imperfecta type IV.

    Science.gov (United States)

    Yuan, Jing; Li, Song; Xu, YeYe; Cong, Lin

    2015-04-02

    Clinical analysis and genetic testing of a family with osteogenesis imperfecta type IV were conducted, aiming to discuss antenatal genetic diagnosis of osteogenesis imperfecta type IV. Preliminary genotyping was performed based on clinical characteristics of the family members and then high-throughput sequencing was applied to rapidly and accurately detect the changes in candidate genes. Genetic testing of the III5 fetus and other family members revealed missense mutation in c.2746G>A, pGly916Arg in COL1A2 gene coding region and missense and synonymous mutation in COL1A1 gene coding region. Application of antenatal genetic diagnosis provides fast and accurate genetic counseling and eugenics suggestions for patients with osteogenesis imperfecta type IV and their families.

  17. DNA ligase IV syndrome; a review.

    Science.gov (United States)

    Altmann, Thomas; Gennery, Andrew R

    2016-10-07

    DNA ligase IV deficiency is a rare primary immunodeficiency, LIG4 syndrome, often associated with other systemic features. DNA ligase IV is part of the non-homologous end joining mechanism, required to repair DNA double stranded breaks. Ubiquitously expressed, it is required to prevent mutagenesis and apoptosis, which can result from DNA double strand breakage caused by intracellular events such as DNA replication and meiosis or extracellular events including damage by reactive oxygen species and ionising radiation.Within developing lymphocytes, DNA ligase IV is required to repair programmed DNA double stranded breaks induced during lymphocyte receptor development.Patients with hypomorphic mutations in LIG4 present with a range of phenotypes, from normal to severe combined immunodeficiency. All, however, manifest sensitivity to ionising radiation. Commonly associated features include primordial growth failure with severe microcephaly and a spectrum of learning difficulties, marrow hypoplasia and a predisposition to lymphoid malignancy. Diagnostic investigations include immunophenotyping, and testing for radiosensitivity. Some patients present with microcephaly as a predominant feature, but seemingly normal immunity. Treatment is mainly supportive, although haematopoietic stem cell transplantation has been used in a few cases.

  18. Generation-IV Nuclear Energy Systems

    Science.gov (United States)

    McFarlane, Harold

    2008-05-01

    Nuclear power technology has evolved through roughly three generations of system designs: a first generation of prototypes and first-of-a-kind units implemented during the period 1950 to 1970; a second generation of industrial power plants built from 1970 to the turn of the century, most of which are still in operation today; and a third generation of evolutionary advanced reactors which began being built by the turn of the 20^th century, usually called Generation III or III+, which incorporate technical lessons learned through more than 12,000 reactor-years of operation. The Generation IV International Forum (GIF) is a cooperative international endeavor to develop advanced nuclear energy systems in response to the social, environmental and economic requirements of the 21^st century. Six Generation IV systems under development by GIF promise to enhance the future contribution and benefits of nuclear energy. All Generation IV systems aim at performance improvement, new applications of nuclear energy, and/or more sustainable approaches to the management of nuclear materials. High-temperature systems offer the possibility of efficient process heat applications and eventually hydrogen production. Enhanced sustainability is achieved primarily through adoption of a closed fuel cycle with reprocessing and recycling of plutonium, uranium and minor actinides using fast reactors. This approach provides significant reduction in waste generation and uranium resource requirements.

  19. Characteristics of Nitrogen Doped Diamond-Like Carbon Films Prepared by Unbalanced Magnetron Sputtering for Electronic Devices.

    Science.gov (United States)

    Lee, Jaehyeong; Choi, Byung Hui; Yun, Jung-Hyun; Park, Yong Seob

    2016-05-01

    Synthetic diamond-like carbon (DLC) is a carbon-based material used mainly in cutting tool coatings and as an abrasive material. The market for DLC has expanded into electronics, optics, and acoustics because of its distinct electrical and optical properties. In this work, n-doped DLC (N:DLC) films were deposited on p-type silicon substrates using an unbalanced magnetron sputtering (UBMS) method. We investigated the effect of the working pressure on the microstructure and electrical properties of n-doped DLC films. The structural properties of N:DLC films were investigated by Raman spectroscopy and SEM-EDX, and the electrical properties of films were investigated by observing the changes in the resistivity and current-voltage (I-V) properties. The N:DLC films prepared by UBMS in this study demonstrated good conducting and physical properties with n-doping.

  20. Density diagnostics derived from the O iv and S iv intercombination lines observed by IRIS

    Science.gov (United States)

    Polito, V.; Del Zanna, G.; Dudík, J.; Mason, H. E.; Giunta, A.; Reeves, K. K.

    2016-10-01

    The intensity of the O iv 2s2 2p 2P-2s2p24P and S iv 3 s2 3p 2P-3s 3p24 P intercombination lines around 1400 Å observed with the Interface Region Imaging Spectrograph (IRIS) provide a useful tool to diagnose the electron number density (Ne) in the solar transition region plasma. We measure the electron number density in a variety of solar features observed by IRIS, including an active region (AR) loop, plage and brightening, and the ribbon of the 22-June-2015 M 6.5 class flare. By using the emissivity ratios of O iv and S iv lines, we find that our observations are consistent with the emitting plasma being near isothermal (logT[K] ≈ 5) and iso-density (Ne ≈ 1010.6 cm-3) in the AR loop. Moreover, high electron number densities (Ne ≈ 1013 cm-3) are obtained during the impulsive phase of the flare by using the S iv line ratio. We note that the S iv lines provide a higher range of density sensitivity than the O iv lines. Finally, we investigate the effects of high densities (Ne ≳ 1011 cm-3) on the ionization balance. In particular, the fractional ion abundances are found to be shifted towards lower temperatures for high densities compared to the low density case. We also explored the effects of a non-Maxwellian electron distribution on our diagnostic method. The movie associated to Fig. 3 is available at http://www.aanda.org

  1. ATR-FTIR and UV-Vis Spectroscopic Studies of Aqueous U(IV)-oxalate Complexes under Mild Acidic Conditions

    Energy Technology Data Exchange (ETDEWEB)

    Cha, Wansik; Jung, Euo Chang; Cho, Hyeryun; Park, Yangsoon; Ha, Yeongkeong [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

    2014-05-15

    The redox transformation process between U(VI) and U(IV) likely involves the participation of soluble or dissolved U(IV) species, such as U(IV)-hydroxo compounds and organic/inorganic ligand complexes. However, their role in the redox process has not been well documented, partly due to the ready oxidation of soluble U(IV) species, and partly due to the assumption that soluble or dissolved forms of U(IV) account for only a minor fraction of uranium in groundwater systems. In this study, a bidentate chelate ligand, oxalate (Ox) was selected to examine the complexation behaviors of U(IV) and ultimately its impact on the U(IV) solubility in mildly acidic solutions. Although some early studies reported that oxalate and pyrophosphate, i. e., multivalent anions, can form soluble U(IV) complexes, the related thermodynamic data and evidences for chemical speciation are very scarce. In our previous work, the U(IV)-Ox 1:1 complex was identified by monitoring the gradual transition of the characteristic absorption spectrum of U(OH){sup 3+} to that of UOx{sup 2+} upon the addition of oxalate at pH 1.6.2.0. This work aims to further provide spectroscopic evidence for the formation of multi-ligand complexes, i. e., U(Ox)n{sup 4-2n} (n ≥ 2) at pH 2-5 using attenuated total reflectance (ATR)- FTIR spectroscopy and UV-Vis absorption spectroscopy. The solid phase of U(IV)-Ox complex system was also characterized through an XRD analysis. Analysis of the FTIR spectra is found to be useful to determine the complexation stoichiometry and to obtain the structural information of the complexes. The outcome of the spectroscopic analysis for the multi-ligand complexation equilibria will be discussed in detail.

  2. Studies of Aqueous U(IV) Complexation under Thiol-rich Conditions

    Energy Technology Data Exchange (ETDEWEB)

    Cha, Wansik; Cho, Hyeryun; Jung, Euo Chang [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

    2013-05-15

    Organic thiol compounds and hydrogen sulfide (H{sub 2}S) are electron donors and metabolic products of sulfate reducing bacteria. In addition, they are among redox potential (Eh) determinants of groundwater systems due to their redox characteristics. The low values of acid dissociation constants for .SH (pK{sub a}, 7-9) compared to those of aliphatic or phenolic .OH, impart greater anionic and metal-binding properties to the molecules. Recently, we demonstrated that a thiol compound (i. e., thiosalicylate) enhances the solubility of U(VI) at higher pH levels (< ∼9). In this study, to have a better knowledge of the behaviors of U(IV) species under anaerobic conditions, the U(IV)-OH complex formation in the presence of thiol was examined using UV-Vis spectrophotometry and TRLFS (time-resolved laser-induced fluorescence spectroscopy). A TRLFS-based U(IV) quantification methodology developed earlier was applied to examine the effects of thiol species on the dissolution behaviors. Based on UV-Vis absorption monitoring, the presence of thiol does not result in a significant changes in the low-pH hydrolysis behaviors of U(IV). However, the concentration of U(IV) dissolved in bulk phase of aqueous solutions increased with the increase of thiol concentration. The formation of soluble thiol complexes or the stabilization of UO{sub 2} nanoparticles may explain the observed solubility increase.

  3. On the role of Mn(IV) vacancies in the photoreductive dissolution of hexagonal birnessite

    Energy Technology Data Exchange (ETDEWEB)

    Kwon, K.D.; Refson, K.; Sposito, G.

    2009-06-01

    Photoreductive dissolution of layer type Mn(IV) oxides (birnessite) under sunlight illumination to form soluble Mn(II) has been observed in both field and laboratory settings, leading to a consensus that this process is a key driver of the biogeochemical cycling of Mn in the euphotic zones of marine and freshwater ecosystems. However, the underlying mechanisms for the process remain unknown, although they have been linked to the semiconducting characteristics of hexagonal birnessite, the ubiquitous Mn(IV) oxide produced mainly by bacterial oxidation of soluble Mn(II). One of the universal properties of this biogenic mineral is the presence of Mn(IV) vacancies, long-identified as strong adsorption sites for metal cations. In this paper, the possible role of Mn vacancies in photoreductive dissolution is investigated theoretically using quantum mechanical calculations based on spin-polarized density functional theory (DFT). Our DFT study demonstrates unequivocally that Mn vacancies significantly reduce the band-gap energy for hexagonal birnessite relative to a hypothetical vacancy-free MnO{sub 2} and thus would increase the concentration of photo-induced electrons available for Mn(IV) reduction upon illumination of the mineral by sunlight. Calculations of the charge distribution in the presence of vacancies, although not fully conclusive, show a clear separation of photo-induced electrons and holes, implying a slow recombination of these charge-carriers that facilitates the two-electron reduction of Mn(IV) to Mn(II).

  4. The uptake and distribution of selenium in three aquatic plants grown in Se(IV) solution.

    Science.gov (United States)

    Mechora, Spela; Stibilj, Vekoslava; Germ, Mateja

    2013-03-15

    The uptake of Se(IV) by Myriophyllum spicatum, Ceratophyllum demersum and Potamogeton perfoliatus, and the effects of Se(IV) on their physiological and biochemical characteristics were studied. Plants were cultivated outdoors under semi-controlled conditions in water solution containing Na selenite (20 μg Se L(-1) and 10 mg Se L(-1)). The higher concentration of Se lowered the photochemical efficiency of PSII in all species studied, while the lower concentration had no effect on any species. The higher concentration of Se lowered respiratory potential in M. spicatum. The response of M. spicatum and C. demersum to Se(IV) regarding chlorophylls was variable, however in the majority of cases, there was a trend of increasing the amount of chlorophylls, while in P. perfoliatus the amount of chlorophyll a decreased. The concentration of Se in plants cultured in 10 mg Se(IV) L(-1) ranged from 436 to 839 μg Se g(-1) DM in M. spicatum, 319 to 988 μg Se g(-1) DM in C. demersum and 310 to 661 μg Se g(-1) DM in P. perfoliatus. The amount of soluble Se compounds in enzyme extracts of high Se treatment was 27% in M. spicatum, 41% in C. demersum and 35% in P. perfoliatus. Se compounds were determined using HPLC-ICP-MS. It was observed that the applied Se(IV) was mainly transformed to insoluble Se.

  5. Synthesis and evaluation of artificial antigens for astragaloside IV

    Directory of Open Access Journals (Sweden)

    Sheng-lan Yu

    2014-06-01

    Full Text Available The objective of this study was to produce artificial antigens for astragaloside IV that could be used to prepare antibodies against astragaloside IV screened in Radix astragali (Astragalus membranaceus (Fisch Bunge, Fabaceae and its preparations, using an indirect ELISA. Astragaloside IV was coupled to carrier proteins, bovine serum albumin and ovalbumin using the sodium periodate method and was then evaluated using SDS-PAGE, MALDI-TOF MS and animal immunizations. The coupling ratio of astragaloside IV to bovine serum albumin ratio was determined to be thirteen, and the indirect ELISA demonstrated that three groups of mice immunized with astragaloside IV-bovine serum albumin produced anti-astragaloside IV- bovine serum albumin-specific antibody, with a minimum serum titer of 1:9600. A method for synthesizing highly immunogenic astragaloside IV artificial antigens was successfully developed thus indicating its feasibility in the establishment of a fast immunoassay for astragaloside IV content determination in Radix astragali and its products.

  6. Planning a Kinetic and Mechanistic Study with Cerium (IV)

    Science.gov (United States)

    Hanna, Samir B.; And Others

    1976-01-01

    Presents a kinetic study that utilizes a method for varying the concentrations of the possible Ce(IV) species and computing the concentration distribution of the sulfato and hydroxo species of Ce(IV). (MLH)

  7. Surgical decision making for stage IV adult acquired flatfoot disorder.

    Science.gov (United States)

    Peterson, Kyle S; Hyer, Christopher F

    2014-07-01

    Adult acquired flatfoot deformity is a debilitating musculoskeletal condition affecting the lower extremity. Posterior tibial tendon dysfunction (PTTD) is the primary etiology for the development of a flatfoot deformity in an adult. PTTD is classified into 4 stages (with stage IV subdivided into stage IV-A and IV-B). This classification is described in detail in this article.

  8. 29 CFR 4022.63 - Estimated title IV benefit.

    Science.gov (United States)

    2010-07-01

    ... 29 Labor 9 2010-07-01 2010-07-01 false Estimated title IV benefit. 4022.63 Section 4022.63 Labor... PAYABLE IN TERMINATED SINGLE-EMPLOYER PLANS Benefit Reductions in Terminating Plans § 4022.63 Estimated... administrator shall determine each participant's estimated title IV benefit. The estimated title IV...

  9. 78 FR 45592 - DeltaPoint Capital IV, LP;

    Science.gov (United States)

    2013-07-29

    ... ADMINISTRATION DeltaPoint Capital IV, LP; Notice Seeking Exemption Under Section 312 of the Small Business Investment Act, Conflicts of Interest Notice is hereby given that DeltaPoint Capital IV, L.P., 45 East Avenue... Business Administration (``SBA'') Rules and Regulations (13 CFR 107.730). DeltaPoint Capital IV,...

  10. 40 CFR 144.23 - Class IV wells.

    Science.gov (United States)

    2010-07-01

    ... 40 Protection of Environment 22 2010-07-01 2010-07-01 false Class IV wells. 144.23 Section 144.23... INJECTION CONTROL PROGRAM Authorization of Underground Injection by Rule § 144.23 Class IV wells. (a) Injection into existing Class IV wells is authorized for up to six months after approval or promulgation...

  11. Expanding the Ecological Validity of WAIS-IV and WMS-IV With the Texas Functional Living Scale

    OpenAIRE

    Drozdick, Lisa Whipple; Cullum, C. Munro

    2010-01-01

    Assessment of functional status is an important aspect of clinical evaluation. As part of the standardization of the Wechsler Adult Intelligence Scale–Fourth Edition (WAIS-IV) and Wechsler Memory Scale–Fourth Edition (WMS-IV), participants completed the Texas Functional Living Scale (TFLS), a measure of Instrumental Activities of Daily Living. The relationships between TFLS and WAIS-IV and WMS-IV were examined in both normally developing and clinical samples. In general, the highest correlati...

  12. Synthesis and characterization of thorium(IV) and uranium(IV) complexes with Schiff bases

    Energy Technology Data Exchange (ETDEWEB)

    Radoske, Thomas; Maerz, Juliane; Kaden, Peter; Patzschke, Michael; Ikeda-Ohno, Atsushi [Helmholtz-Zentrum Dresden-Rossendorf e.V., Dresden (Germany). Chemistry of the F-Elements

    2017-06-01

    We report herein the synthesis and characterization of several imine complexes of tetravalent thorium (Th(IV)) and uranium (U(IV)). The ligands investigated in this study are a Schiff base type, including the well-known salen ligand (H{sub 2}Le, Fig. 1). The complexation in solution was investigated by NMR measurements indicating paramagnetic effects of unpaired f-electrons of U(IV) on the ligand molecule. We also determined the solid-state molecular structures of the synthesized complexes by single crystal X-ray diffraction. The synthesized complexes show an eight-fold coordination geometry around the actinide center surrounded by two tetradentate ligands with 2N- and 2O-donor atoms.

  13. Revisiting Case IV: a reassessment of bias and standard errors of Case IV under range restriction.

    Science.gov (United States)

    Fife, Dustin A; Mendoza, Jorge L; Terry, Robert

    2013-11-01

    In 2004, Hunter and Schmidt proposed a correction (called Case IV) that seeks to estimate disattenuated correlations when selection is made on an unmeasured variable. Although Case IV is an important theoretical development in the range restriction literature, it makes an untestable assumption, namely that the partial correlation between the unobserved selection variable and the performance measure is zero. We show in this paper why this assumption may be difficult to meet and why previous simulations have failed to detect the full extent of bias. We use meta-analytic literature to investigate the plausible range of bias. We also show how Case IV performs in terms of standard errors. Finally, we give practical recommendations about how the contributions of Hunter and Schmidt (2004) can be extended without making such stringent assumptions.

  14. Performance evaluation study of IHX-IV seal assembly

    Energy Technology Data Exchange (ETDEWEB)

    Padmakumar, G.; Venkatramanan, J.; Balasubramanian, V.; Prakash, V.; Vaidyanathan, G. [Indira Gandhi Centre for Atomic Research, Kalpakkam - 603102 (India); Konnur, M.S.; Ram Mohan, S.; Suresh, M.; Manikandan, S.; Rajesh, V. [Fluid Control Research Institute, Palakkad - 678 623 (India)

    2005-07-01

    Full text of publication follows: The construction of the 500 MWe Prototype Fast Breeder Reactor (PFBR) has commenced at IGCAR, Kalpakkam. PFBR has four intermediate Heat Exchangers (IHX) and two primary Sodium Pumps. The secondary circuits consist of two loops with each loop having one secondary pump, two intermediate heat exchangers, one surge tank and four steam generators. Primary circuit has both hot and cold sodium and is separated into hot and cold pools by Inner Vessel(IV). IHX forms the interface between the primary circuit and secondary circuit of PFBR. The IHX and pumps are supported from at the top in the roof slab and penetrate through the conical portion of inner vessel. Proper sealing arrangements are necessary to prevent leakage of hot sodium into the cold pool through the penetration. The Mechanical Seal is employed to minimize the leakage through the penetration. This seal arrangement can facilitate Differential radial and thermal expansion between IHX and IV stand pipe at the region of penetration Relative tilting between the axis of IHX and IV stand pipe Smooth installation during commissioning and easy removal during maintenance Minimizes the forces transmitted to IV The hydraulic simulation study, of the IHX - IV mechanical seal assembly was undertaken at the Fluid Control Research Institute, Palghat. The seal has two leakage paths viz. Axial and radial. The leakage depends on the contact pressure on the sealing surface and the head causing the leakage. High leakage flow may lead to damage of inner vessel and may affect the thermal efficiency of the IHX. CFD analysis of the geometry was done in detail. This was done for prototype and the model condition. The optimized design obtained using CFD was employed for experimental evaluation. In the experimental set up, the leakage characteristics was studied for varying axial and radial clearance that prevails during the various stages of operation of the seal assembly in the reactor. A 1/2 scaled

  15. Gen IV Materials Handbook Functionalities and Operation

    Energy Technology Data Exchange (ETDEWEB)

    Ren, Weiju [ORNL

    2009-12-01

    This document is prepared for navigation and operation of the Gen IV Materials Handbook, with architecture description and new user access initiation instructions. Development rationale and history of the Handbook is summarized. The major development aspects, architecture, and design principles of the Handbook are briefly introduced to provide an overview of its past evolution and future prospects. Detailed instructions are given with examples for navigating the constructed Handbook components and using the main functionalities. Procedures are provided in a step-by-step fashion for Data Upload Managers to upload reports and data files, as well as for new users to initiate Handbook access.

  16. Dual (type IV left anterior descending artery

    Directory of Open Access Journals (Sweden)

    Ozdil Baskan

    2013-11-01

    Full Text Available Congenital coronary artery anomalies are uncommon. Dual left anterior descending coronary artery (LAD is defined as the presence of two LADs within the anterior interventricular sulcus (AIVS, and is classified into four types. Type IV is a rarely reported subtype and differs from the others, with a long LAD originating from the right coronary artery (RCA. Dual LAD is a benign coronary artery anomaly, but should be recognised especially before interventional procedures. With the increasing use of multidedector computed tomography (MDCT, it is essential for radiologists to be aware of this entity and the cross-sectional findings.

  17. Research in collegiate mathematics education IV

    CERN Document Server

    Dubinsky, Ed; Kaput, Jim

    2001-01-01

    This fourth volume of Research in Collegiate Mathematics Education (RCME IV) reflects the themes of student learning and calculus. Included are overviews of calculus reform in France and in the U.S. and large-scale and small-scale longitudinal comparisons of students enrolled in first-year reform courses and in traditional courses. The work continues with detailed studies relating students' understanding of calculus and associated topics. Direct focus is then placed on instruction and student comprehension of courses other than calculus, namely abstract algebra and number theory. The volume co

  18. Stable kagome lattices from group IV elements

    Science.gov (United States)

    Leenaerts, O.; Schoeters, B.; Partoens, B.

    2015-03-01

    A thorough investigation of three-dimensional kagome lattices of group IV elements is performed with first-principles calculations. The investigated kagome lattices of silicon and germanium are found to be of similar stability as the recently proposed carbon kagome lattice. Carbon and silicon kagome lattices are both direct-gap semiconductors but they have qualitatively different electronic band structures. While direct optical transitions between the valence and conduction bands are allowed in the carbon case, no such transitions can be observed for silicon. The kagome lattice of germanium exhibits semimetallic behavior but can be transformed into a semiconductor after compression.

  19. Benzylchloridobis(quinolin-8-olatotin(IV

    Directory of Open Access Journals (Sweden)

    Qibao Wang

    2009-08-01

    Full Text Available In the title compound, [Sn(C7H7(C9H6NO2Cl], the SnIV ion is in a distorted octahedral coordination environment formed by the O and N atoms of two bis-chelating quinolin-8-olate ligands, a Cl atom and a C atom from a benzyl ligand. The axial sites are occupied by an N atom of a quinolinate ligand and the C atom of the benzyl ligand. The axial Sn—N bond is slightly shorter than the equatorial Sn—N bond.

  20. New Materials for NGNP/Gen IV

    Energy Technology Data Exchange (ETDEWEB)

    Robert W. Swindeman; Douglas L. Marriott

    2009-12-18

    The bounding conditions were briefly summarized for the Next Generation Nuclear Plant (NGNP) that is the leading candidate in the Department of Energy Generation IV reactor program. Metallic materials essential to the successful development and proof of concept for the NGNP were identified. The literature bearing on the materials technology for high-temperature gas-cooled reactors was reviewed with emphasis on the needs identified for the NGNP. Several materials were identified for a more thorough study of their databases and behavioral features relative to the requirements ASME Boiler and Pressure Vessel Code, Section III, Division 1, Subsection NH.

  1. Topological characterisation and identification of critical domains within glucosyltransferase IV (GtrIV of Shigella flexneri

    Directory of Open Access Journals (Sweden)

    Nair Anesh

    2011-12-01

    Full Text Available Abstract Background The three bacteriophage genes gtrA, gtrB and gtr(type are responsible for O-antigen glucosylation in Shigella flexneri. Both gtrA and gtrB have been demonstrated to be highly conserved and interchangeable among serotypes while gtr(type was found to be specific to each serotype, leading to the hypothesis that the Gtr(type proteins are responsible for attaching glucosyl groups to the O-antigen in a site- and serotype- specific manner. Based on the confirmed topologies of GtrI, GtrII and GtrV, such interaction and attachment of the glucosyl groups to the O-antigen has been postulated to occur in the periplasm. Results In this study, the topology of GtrIV was experimentally determined by creating different fusions between GtrIV and a dual-reporter protein, PhoA/LacZ. This study shows that GtrIV consists of 8 transmembrane helices, 2 large periplasmic loops, 2 small cytoplasmic N- and C- terminal ends and a re-entrant loop that occurs between transmembrane helices III and IV. Though this topology differs from that of GtrI, GtrII, GtrV and GtrX, it is very similar to that of GtrIc. Furthermore, both the N-terminal periplasmic and the C-terminal periplasmic loops are important for GtrIV function as shown via a series of loop deletion experiments and the creation of chimeric proteins between GtrIV and its closest structural homologue, GtrIc. Conclusion The current study provides the basis for elucidating the structure and mechanism of action of this important O-antigen modifying glucosyltransferase.

  2. Zirconium(IV)- and hafnium(IV)-catalyzed highly enantioselective epoxidation of homoallylic and bishomoallylic alcohols.

    Science.gov (United States)

    Li, Zhi; Yamamoto, Hisashi

    2010-06-16

    In this report, zirconium(IV)- and hafnium(IV)-bishydroxamic acid complexes were utilized in the highly enantioselective epoxidation of homoallylic alcohols and bishomoallylic alcohols, which used to be quite difficult substrates for other types of asymmetric epoxidation reactions. The performance of the catalyst was improved by adding polar additive and molecular sieves. For homoallylic alcohols, the reaction could provide epoxy alcohols in up to 83% yield and up to 98% ee, while, for bishomoallylic alcohols, up to 79% yield and 99% ee of epoxy alcohols rather than cyclized tetrahydrofuran compounds could be obtained in most cases.

  3. Zirconium(IV) and Hafnium(IV)-Catalyzed Highly Enantioselective Epoxidation of Homoallylic and Bishomoallylic Alcohols

    Science.gov (United States)

    Li, Zhi; Yamamoto, Hisashi

    2010-01-01

    In this report, zirconium(IV) and hafnium(IV)-bishydroxamic acid complexes were utilized in the highly enantioselective epoxidation of homoallylic alcohols and bishomoallylic alcohols, which used to be quite difficult substrates for other types of asymmetric epoxidation reactions. The performance of the catalyst was improved by adding polar additive and molecular sieves. For homoallylic alcohols, the reaction could provide epoxy alcohols in up to 81% yield and up to 98% ee, while for bishomoallylic alcohols, up to 75% yield and 99% ee of epoxy alcohols rather than cyclize compounds could be obtained in most cases. PMID:20481541

  4. Prediction of IV curves for a superconducting thin film using artificial neural networks

    Science.gov (United States)

    Kamran, M.; Haider, S. A.; Akram, T.; Naqvi, S. R.; He, S. K.

    2016-07-01

    We propose a framework using artificial neural networks that predicts the IV characteristics of a superconducting thin film with square array of nano-engineered periodic antidots, called holes. We adopt the conventionally used commercial physical properties measurement system to obtain a dataset comprising transport measurements, and use this dataset to train our artificial neural network. Once trained, the model is capable of predicting the curve for varying temperature and magnetic flux values, which are cross validated by the physical properties measurement system. Consistent with the works in literature, our framework suggests Josephson Junctions like behavior near transition temperature and at stronger magnetic fields. Our study is important since repeated measurements using the conventional method are time consuming and costly; we demonstrate that the proposed method may be effectively used to classify the IV characteristics over a wide range of temperature and magnetic field values.

  5. Predicting DPP-IV inhibitors with machine learning approaches

    Science.gov (United States)

    Cai, Jie; Li, Chanjuan; Liu, Zhihong; Du, Jiewen; Ye, Jiming; Gu, Qiong; Xu, Jun

    2017-04-01

    Dipeptidyl peptidase IV (DPP-IV) is a promising Type 2 diabetes mellitus (T2DM) drug target. DPP-IV inhibitors prolong the action of glucagon-like peptide-1 (GLP-1) and gastric inhibitory peptide (GIP), improve glucose homeostasis without weight gain, edema, and hypoglycemia. However, the marketed DPP-IV inhibitors have adverse effects such as nasopharyngitis, headache, nausea, hypersensitivity, skin reactions and pancreatitis. Therefore, it is still expected for novel DPP-IV inhibitors with minimal adverse effects. The scaffolds of existing DPP-IV inhibitors are structurally diversified. This makes it difficult to build virtual screening models based upon the known DPP-IV inhibitor libraries using conventional QSAR approaches. In this paper, we report a new strategy to predict DPP-IV inhibitors with machine learning approaches involving naïve Bayesian (NB) and recursive partitioning (RP) methods. We built 247 machine learning models based on 1307 known DPP-IV inhibitors with optimized molecular properties and topological fingerprints as descriptors. The overall predictive accuracies of the optimized models were greater than 80%. An external test set, composed of 65 recently reported compounds, was employed to validate the optimized models. The results demonstrated that both NB and RP models have a good predictive ability based on different combinations of descriptors. Twenty "good" and twenty "bad" structural fragments for DPP-IV inhibitors can also be derived from these models for inspiring the new DPP-IV inhibitor scaffold design.

  6. Predicting DPP-IV inhibitors with machine learning approaches

    Science.gov (United States)

    Cai, Jie; Li, Chanjuan; Liu, Zhihong; Du, Jiewen; Ye, Jiming; Gu, Qiong; Xu, Jun

    2017-02-01

    Dipeptidyl peptidase IV (DPP-IV) is a promising Type 2 diabetes mellitus (T2DM) drug target. DPP-IV inhibitors prolong the action of glucagon-like peptide-1 (GLP-1) and gastric inhibitory peptide (GIP), improve glucose homeostasis without weight gain, edema, and hypoglycemia. However, the marketed DPP-IV inhibitors have adverse effects such as nasopharyngitis, headache, nausea, hypersensitivity, skin reactions and pancreatitis. Therefore, it is still expected for novel DPP-IV inhibitors with minimal adverse effects. The scaffolds of existing DPP-IV inhibitors are structurally diversified. This makes it difficult to build virtual screening models based upon the known DPP-IV inhibitor libraries using conventional QSAR approaches. In this paper, we report a new strategy to predict DPP-IV inhibitors with machine learning approaches involving naïve Bayesian (NB) and recursive partitioning (RP) methods. We built 247 machine learning models based on 1307 known DPP-IV inhibitors with optimized molecular properties and topological fingerprints as descriptors. The overall predictive accuracies of the optimized models were greater than 80%. An external test set, composed of 65 recently reported compounds, was employed to validate the optimized models. The results demonstrated that both NB and RP models have a good predictive ability based on different combinations of descriptors. Twenty "good" and twenty "bad" structural fragments for DPP-IV inhibitors can also be derived from these models for inspiring the new DPP-IV inhibitor scaffold design.

  7. Classification of Liss IV Imagery Using Decision Tree Methods

    Science.gov (United States)

    Verma, Amit Kumar; Garg, P. K.; Prasad, K. S. Hari; Dadhwal, V. K.

    2016-06-01

    Image classification is a compulsory step in any remote sensing research. Classification uses the spectral information represented by the digital numbers in one or more spectral bands and attempts to classify each individual pixel based on this spectral information. Crop classification is the main concern of remote sensing applications for developing sustainable agriculture system. Vegetation indices computed from satellite images gives a good indication of the presence of vegetation. It is an indicator that describes the greenness, density and health of vegetation. Texture is also an important characteristics which is used to identifying objects or region of interest is an image. This paper illustrate the use of decision tree method to classify the land in to crop land and non-crop land and to classify different crops. In this paper we evaluate the possibility of crop classification using an integrated approach methods based on texture property with different vegetation indices for single date LISS IV sensor 5.8 meter high spatial resolution data. Eleven vegetation indices (NDVI, DVI, GEMI, GNDVI, MSAVI2, NDWI, NG, NR, NNIR, OSAVI and VI green) has been generated using green, red and NIR band and then image is classified using decision tree method. The other approach is used integration of texture feature (mean, variance, kurtosis and skewness) with these vegetation indices. A comparison has been done between these two methods. The results indicate that inclusion of textural feature with vegetation indices can be effectively implemented to produce classifiedmaps with 8.33% higher accuracy for Indian satellite IRS-P6, LISS IV sensor images.

  8. CLASSIFICATION OF LISS IV IMAGERY USING DECISION TREE METHODS

    Directory of Open Access Journals (Sweden)

    A. K. Verma

    2016-06-01

    Full Text Available Image classification is a compulsory step in any remote sensing research. Classification uses the spectral information represented by the digital numbers in one or more spectral bands and attempts to classify each individual pixel based on this spectral information. Crop classification is the main concern of remote sensing applications for developing sustainable agriculture system. Vegetation indices computed from satellite images gives a good indication of the presence of vegetation. It is an indicator that describes the greenness, density and health of vegetation. Texture is also an important characteristics which is used to identifying objects or region of interest is an image. This paper illustrate the use of decision tree method to classify the land in to crop land and non-crop land and to classify different crops. In this paper we evaluate the possibility of crop classification using an integrated approach methods based on texture property with different vegetation indices for single date LISS IV sensor 5.8 meter high spatial resolution data. Eleven vegetation indices (NDVI, DVI, GEMI, GNDVI, MSAVI2, NDWI, NG, NR, NNIR, OSAVI and VI green has been generated using green, red and NIR band and then image is classified using decision tree method. The other approach is used integration of texture feature (mean, variance, kurtosis and skewness with these vegetation indices. A comparison has been done between these two methods. The results indicate that inclusion of textural feature with vegetation indices can be effectively implemented to produce classifiedmaps with 8.33% higher accuracy for Indian satellite IRS-P6, LISS IV sensor images.

  9. Semiempirical model based on thermodynamic principles for determining 6 kW proton exchange membrane electrolyzer stack characteristics

    Science.gov (United States)

    Dale, N. V.; Mann, M. D.; Salehfar, H.

    The performance of a 6 kW proton exchange membrane (PEM) electrolyzer was modeled using a semiempirical equation. Total cell voltage was represented as a sum of the Nernst voltage, activation overpotential and ohmic overpotential. A temperature and pressure dependent Nernst potential, derived from thermodynamic principles, was used to model the 20 cell PEM electrolyzer stack. The importance of including the temperature dependence of various model components is clearly demonstrated. The reversible potential without the pressure effect decreases with increasing temperature in a linear fashion. The exchange current densities at both the electrodes and the membrane conductivity were the coefficients of the semiempirical equation. An experimental system designed around a 6 kW PEM electrolyzer was used to obtain the current-voltage characteristics at different stack temperatures. A nonlinear curve fitting method was employed to determine the equation coefficients from the experimental current-voltage characteristics. The modeling results showed an increase in the anode and cathode exchange current densities with increasing electrolyzer stack temperature. The membrane conductivity was also increased with increasing temperature and was modeled as a function of temperature. The electrolyzer energy efficiencies at different temperatures were evaluated using temperature dependent higher heating value voltages instead of a fixed value of 1.48 V.

  10. Method for estimation of the output electric power of PV module with considering environmental factors. Method for estimation of output using I-V curves; Kankyo inshi wo koryoshita taiyo denchi module no shutsuryoku keisanho. I-V tokusei curve ni yoru keisan

    Energy Technology Data Exchange (ETDEWEB)

    Yamagami, Y.; Tani, T. [Science University of Tokyo, Tokyo (Japan)

    1996-10-27

    Based on the basic quality equation of photovoltaic (PV) cell, a quality equation of PV module has been constructed by considering the spectral distribution of solar radiation and its intensity. A calculation method has been also proposed for determining the output from current-voltage (I-V) curves. Effectiveness of this method was examined by comparing calculated results and observed results. Amorphous Si (a-Si) and polycrystal Si PV modules were examined. By considering the environmental factors, differences of the annual output between the calculated and observed values were reduced from 2.50% to 0.95% for the a-Si PV module, and from 2.52% to 1.24% for the polycrystal Si PV module, which resulted in the reduction more than 50%. For the a-Si PV module, the environmental factor most greatly affecting the annual output was the spectral distribution of solar radiation, which was 3.86 times as large as the cell temperature, and 1.04 times as large as the intensity of solar radiation. For the polycrystal PV module, the environmental factor most greatly affecting the annual output was the cell temperature, which was 7.05 times as large as the spectral distribution of solar radiation, and 1.74 times as large as the intensity of solar radiation. 6 refs., 4 figs., 1 tab.

  11. Energy use in the marine transportation industry: Task III. Efficiency improvements; Task IV. Industry future. Final report, Volume IV. [Projections for year 2000

    Energy Technology Data Exchange (ETDEWEB)

    None

    1977-12-01

    Tasks III and IV measure the characteristics of potential research and development programs that could be applied to the maritime industry. It was necessary to identify potential operating scenarios for the maritime industry in the year 2000 and determine the energy consumption that would result given those scenarios. After the introductory chapter the operational, regulatory, and vessel-size scenarios for the year 2000 are developed in Chapter II. In Chapter III, future cargo flows and expected levels of energy use for the baseline 2000 projection are determined. In Chapter IV, the research and development programs are introduced into the future US flag fleet and the energy-savings potential associated with each is determined. The first four appendices (A through D) describe each of the generic technologies. The fifth appendix (E) contains the baseline operating and cost parameters against which 15 program areas were evaluated. (MCW)

  12. Characteristics of Linear MHD Generators with One or a Few Loads

    Energy Technology Data Exchange (ETDEWEB)

    Witalis, E.A.

    1966-02-15

    The theoretical performance of linear series segmented MHD generators with finite size electrodes and one or a few identical external loads is investigated. The analysis is an extension of our conformal mapping investigation previously reported. The electrical characteristics are evaluated as functions of the segmentation degree, the Hall parameter and the relative position of short-circuited electrodes. Special consideration is given to the influence of staggering the electrodes, i. e. shifting the relative positions of short-circuited electrodes. General electrical terminal characteristics, i. e. the full current-voltage relation, can not be obtained by the exact analytical method, which is applicable only to so-called design load conditions or infinitely long MHD channels. However, it is shown how the general properties can be explained qualitatively and calculated approximately by describing off-design modes of operation in terms of a fictitious 'effective' number of external loads.

  13. Electrical characteristics of Ni Ohmic contact on n-type GeSn

    Energy Technology Data Exchange (ETDEWEB)

    Li, H.; Cheng, H. H., E-mail: hhcheng@ntu.edu.tw [Center for Condensed Matter Sciences and Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 106, Taiwan (China); Lee, L. C.; Lee, C. P. [Center for Nano Science and Technology, National Chiao Tung University, Hsinchu 300, Taiwan (China); Su, L. H.; Suen, Y. W. [Department of Physics and Institute of Nano Science, National Chung Hsing University, Taichung 402, Taiwan (China)

    2014-06-16

    We report an investigation of the electrical and material characteristics of Ni on an n-type GeSn film under thermal annealing. The current-voltage traces measured with the transmission line method are linear for a wide range of annealing temperatures. The specific contact resistivity was found to decrease with increasing annealing temperature, followed by an increase as the annealing temperature further increased, with a minimum value at an annealing temperature of 350 °C. The material characteristics at the interface layer were measured by energy-dispersive spectrometer, showing that an atomic ratio of (Ni)/(GeSn) = 1:1 yields the lowest specific contact resistivity.

  14. Influence of plasma resistance and fluctuation on probe characteristics in detached recombining plasmas

    Energy Technology Data Exchange (ETDEWEB)

    Ohno, N.; Tanaka, N.; Nishijima, D.; Takamura, S. [Nagoya Univ. (Japan). Dept. of Energy Engineering and Science; Ezumi, N. [Dept. of Electronics and Control Engineering, Nagano National Coll. of Technology, Tokuma (Japan)

    2001-07-01

    In order to find the causes of the strong anomaly of current-voltage characteristics of Langmuir probe observed in detached recombining plasmas in a linear divertor plasma simulator, NAGDIS-II, we have investigated plasma resistance along a magnetic field and potential fluctuations in the detached recombining plasmas. Simple calculation on the ratio between the plasma length, at which plasma resistance and resistance of ion sheath formed around a probe tip become equal, and an electron collection length indicates that the evaluation of electron temperature T{sub e} becomes inaccurate at T{sub e} of less than 0.6 eV when plasma density and neutral pressure are 1.0 x 10{sup 18} m{sup -3} and 10 mtorr, respectively. The potential fluctuation in detached recombining plasmas was found to be so large compared to T{sub e}/e, which can also modify the probe characteristics. (orig.)

  15. Gate-dependent asymmetric transport characteristics in pentacene barristors with graphene electrodes

    Science.gov (United States)

    Hwang, Wang-Taek; Min, Misook; Jeong, Hyunhak; Kim, Dongku; Jang, Jingon; Yoo, Daekyung; Jang, Yeonsik; Kim, Jun-Woo; Yoon, Jiyoung; Chung, Seungjun; Yi, Gyu-Chul; Lee, Hyoyoung; Wang, Gunuk; Lee, Takhee

    2016-11-01

    We investigated the electrical characteristics and the charge transport mechanism of pentacene vertical hetero-structures with graphene electrodes. The devices are composed of vertical stacks of silicon, silicon dioxide, graphene, pentacene, and gold. These vertical heterojunctions exhibited distinct transport characteristics depending on the applied bias direction, which originates from different electrode contacts (graphene and gold contacts) to the pentacene layer. These asymmetric contacts cause a current rectification and current modulation induced by the gate field-dependent bias direction. We observed a change in the charge injection barrier during variable-temperature current-voltage characterization, and we also observed that two distinct charge transport channels (thermionic emission and Poole-Frenkel effect) worked in the junctions, which was dependent on the bias magnitude.

  16. Stage IV work-hardening related to disorientations in dislocation structures

    DEFF Research Database (Denmark)

    Pantleon, W.

    2004-01-01

    . Disorientations evolving from purely statistical reasons — leading to a square root dependence of the average disorientation angle on strain — affect the initial work-hardening rate (and the saturation stress) of stage III only slightly. On the other hand, deterministic contributions to the development...... of disorientations, as differences in the activated slip systems across boundaries, cause a linear increase of the flow stress at large strains. Such a constant work-hardening rate is characteristic for stage IV....

  17. Aqueous chemistry of Ce(iv): estimations using actinide analogues.

    Science.gov (United States)

    Marsac, Rémi; Réal, Florent; Banik, Nidhu Lal; Pédrot, Mathieu; Pourret, Olivier; Vallet, Valérie

    2017-10-10

    The prediction of cerium (Ce) aqueous speciation is relevant in many research fields. Indeed, Ce compounds are used for many industrial applications, which may require the control of Ce aqueous chemistry for their synthesis. The aquatic geochemistry of Ce is also of interest. Due to its growing industrial use and its release into the environment, Ce is now considered as an emerging contaminant. Cerium is also used as a proxy of (paleo)redox conditions due to the Ce(iv)/Ce(iii) redox transition. Finally, Ce(iv) is often presented as a relevant analogue of tetravalent actinides (An(iv)). In the present study, quantum chemical calculations were conducted to highlight the similarities between the structures of Ce(iv) and tetravalent actinide (An(iv); An = Th, Pa, U, Np, Pu) aqua-ions, especially Pu(iv). The current knowledge of An(iv) hydrolysis, solubility and colloid formation in water was briefly reviewed but important discrepancies were observed in the available data for Ce(iv). Therefore, new estimations of the hydrolysis constants of Ce(iv) and the solubility of Ce(iv)-(hydr)oxides are proposed, by analogy with Pu(iv). By plotting pH-Eh (Pourbaix) diagrams, we showed that the pH values corresponding to the onset of Ce(iv) species formation (i.e. Ce(iv)-(hydr)oxide or dissolved Ce(iv)) agreed with various experimental results. Although further experimental studies are required to obtain a more accurate thermodynamic database, the present work might yet help to predict more accurately the Ce chemical behavior in aqueous solution.

  18. Correcting C IV-based virial black hole masses

    Science.gov (United States)

    Coatman, Liam; Hewett, Paul C.; Banerji, Manda; Richards, Gordon T.; Hennawi, Joseph F.; Prochaska, J. Xavier

    2017-02-01

    The C IVλλ1498,1501 broad emission line is visible in optical spectra to redshifts exceeding z ˜ 5. C IV has long been known to exhibit significant displacements to the blue and these `blueshifts' almost certainly signal the presence of strong outflows. As a consequence, single-epoch virial black hole (BH) mass estimates derived from C IV velocity widths are known to be systematically biased compared to masses from the hydrogen Balmer lines. Using a large sample of 230 high-luminosity (LBol = 1045.5-1048 erg s-1), redshift 1.5 < z < 4.0 quasars with both C IV and Balmer line spectra, we have quantified the bias in C IV BH masses as a function of the C IV blueshift. C IV BH masses are shown to be a factor of 5 larger than the corresponding Balmer-line masses at C IV blueshifts of 3000 km s-1and are overestimated by almost an order of magnitude at the most extreme blueshifts, ≳5000 km s-1. Using the monotonically increasing relationship between the C IV blueshift and the mass ratio BH(C IV)/BH(Hα), we derive an empirical correction to all C IV BH masses. The scatter between the corrected C IV masses and the Balmer masses is 0.24 dex at low C IV blueshifts (˜0 km s-1) and just 0.10 dex at high blueshifts (˜3000 km s-1), compared to 0.40 dex before the correction. The correction depends only on the C IV line properties - i.e. full width at half-maximum and blueshift - and can therefore be applied to all quasars where C IV emission line properties have been measured, enabling the derivation of unbiased virial BH-mass estimates for the majority of high-luminosity, high-redshift, spectroscopically confirmed quasars in the literature.

  19. Comparative Analysis of Inpatient Costs for Obstetrics and Gynecology Surgery Patients Treated With IV Acetaminophen and IV Opioids Versus IV Opioid-only Analgesia for Postoperative Pain.

    Science.gov (United States)

    Hansen, Ryan N; Pham, An T; Lovelace, Belinda; Balaban, Stela; Wan, George J

    2017-06-01

    Recovery from obstetrics and gynecology (OB/GYN) surgery, including hysterectomy and cesarean section delivery, aims to restore function while minimizing hospital length of stay (LOS) and medical expenditures. Our analyses compare OB/GYN surgery patients who received combination intravenous (IV) acetaminophen and IV opioid analgesia with those who received IV opioid-only analgesia and estimate differences in LOS, hospitalization costs, and opioid consumption. We performed a retrospective analysis of the Premier Database between January 2009 and June 2015, comparing OB/GYN surgery patients who received postoperative pain management with combination IV acetaminophen and IV opioids with those who received only IV opioids starting on the day of surgery and continuing up to the second postoperative day. We performed instrumental variable 2-stage least-squares regressions controlling for patient and hospital covariates to compare the LOS, hospitalization costs, and daily opioid doses (morphine equivalent dose) of IV acetaminophen recipients with that of opioid-only analgesia patients. We identified 225 142 OB/GYN surgery patients who were eligible for our study of whom 89 568 (40%) had been managed with IV acetaminophen and opioids. Participants averaged 36 years of age and were predominantly non-Hispanic Caucasians (60%). Multivariable regression models estimated statistically significant differences in hospitalization cost and opioid use with IV acetaminophen associated with $484.4 lower total hospitalization costs (95% CI = -$760.4 to -$208.4; P = 0.0006) and 8.2 mg lower daily opioid use (95% CI = -10.0 to -6.4), whereas the difference in LOS was not significant, at -0.09 days (95% CI = -0.19 to 0.01; P = 0.07). Compared with IV opioid-only analgesia, managing post-OB/GYN surgery pain with the addition of IV acetaminophen is associated with decreased hospitalization costs and reduced opioid use.

  20. Coulomb blockade effect simulation to the electrical characteristic of silicon based single electron transistor

    Science.gov (United States)

    Nugraha, Mohamad Insan; Darma, Yudi

    2012-06-01

    In this paper, we simulate the effect of interaction between electrons on the electrical characteristic of silicon based single electron transistor (SET). The interaction between electrons is defined in the term of Coulomb blockade effect. These electrical characteristics involve conductance and I-V characteristic in SET structure. The simulation results show that when Coulomb blockade effect is included, the characteristic of I-V and conductance in SET shift to right. In addition, by reducing the quantum dot size, Coulomb blockade effect contributes greater effect. These results are shown in the characteristic of I-V and conductance which shift greater to the right in smaller quantum dot.

  1. Synthesis and characterization of thorium(IV) and uranium(IV) corrole complexes.

    Science.gov (United States)

    Ward, Ashleigh L; Buckley, Heather L; Lukens, Wayne W; Arnold, John

    2013-09-18

    The first examples of actinide complexes incorporating corrole ligands are presented. Thorium(IV) and uranium(IV) macrocycles of Mes2(p-OMePh)corrole were synthesized via salt metathesis with the corresponding lithium corrole in remarkably high yields (93% and 83%, respectively). Characterization by single-crystal X-ray diffraction revealed both complexes to be dimeric, having two metal centers bridged via bis(μ-chlorido) linkages. In each case, the corrole ring showed a large distortion from planarity, with the Th(IV) and U(IV) ions residing unusually far (1.403 and 1.330 Å, respectively) from the N4 plane of the ligand. (1)H NMR spectroscopy of both the Th and U dimers revealed dynamic solution behavior. In the case of the diamagnetic thorium corrole, variable-temperature, DOSY (diffusion-ordered) and EXSY (exhange) (1)H NMR spectroscopy was employed and supported that this behavior was due to an intrinsic pseudorotational mode of the corrole ring about the M-M axis. Additionally, the electronic structure of the actinide corroles was assessed using UV-vis spectroscopy, cyclic voltammetry, and variable-temperature magnetic susceptibility. This novel class of macrocyclic complexes provides a rich platform in an underdeveloped area for the study of nonaqueous actinide bonding and reactivity.

  2. Effects of titanium(iv) ions on human monocyte-derived dendritic cells.

    Science.gov (United States)

    Chan, Erwin Ph; Mhawi, Amir; Clode, Peta; Saunders, Martin; Filgueira, Luis

    2009-03-01

    Orthopaedic metal implants composed of titanium are routinely used in bone fracture repair and for joint replacement therapies. A considerable fraction of implant recipients are unable to benefit due to implant failure resulting from aseptic loosening, while others may experience cutaneous sensitivity to titanium after implantation. An adaptive immune reactivity towards titanium ions, originating from the biocorrosion of the implants, could play a role. As an initiator of the adaptive immune response, dendritic cells (DC) were studied for uptake and characteristics after titanium exposure. Energy filtered transmission electron microscopy showed uptake of titanium(iv) (Ti(iv)) ions by DCs in vitro and co-localisation with phosphorus-rich cell structures of the DC membranes (phospholipids), cytoplasm (ribosomes and phosphorylated proteins) and the nucleus (DNA). DC maturation and function were investigated by measuring cell surface marker expression by flow cytometry. After exposure, DCs showed a decrease in MHC class II (HLA-DR), co-stimulatory molecules (CD40, CD80 & CD86) and chemokine receptors (CCR) 6 and CCR7 but an increase in CCR4 after Ti(iv) treatment. However, Ti(iv) treated DCs had an increased stimulatory capacity towards allogenic lymphocytes. A Ti(iv) concentration dependant increase of IL-12p70 was observed amidst decrease of the other measured cytokines (TGF-β1 and TGF-β2). Hence, Ti(iv) alters DC properties, resulting in an enhanced T lymphocyte reactivity and deviation towards a Th1 type immune response. This effect may be responsible for the inflammatory side effects of titanium implants seen in patients.

  3. [The relationships of intelligence and memory assessed using the WAIS-IV and the WMS-IV].

    Science.gov (United States)

    Lepach, A C; Daseking, M; Petermann, F; Waldmann, H C

    2013-11-01

    This study examines the relationships of intelligence and memory scores derived from WAIS-IV and WMS-IV. We were especially interested in the reciprocal predictive values of the test scales. A sample of 137 healthy adults with an age range between 16 and 69 years was assessed with the WAIS-IV and the WMS-IV. The test order was balanced. Pearson correlations were conducted on the subtest and scale level. A series of 14 linear regression models was tested with memory performance as predictor for intelligence and vice versa. A model including the 3 main memory scales of the WMS-IV was able to predict the global IQ best. It nevertheless explained only 46% of the variance. The memory and intelligence measures show significant relationships, but also represent distinct functions. WAIS-IV and WMS-IV complement one another. © Georg Thieme Verlag KG Stuttgart · New York.

  4. Targeted pancreatic cancer therapy with the small molecule drug conjugate SW IV-134.

    Science.gov (United States)

    Hashim, Yassar M; Spitzer, Dirk; Vangveravong, Suwanna; Hornick, Mary C; Garg, Gunjal; Hornick, John R; Goedegebuure, Peter; Mach, Robert H; Hawkins, William G

    2014-07-01

    Pancreatic adenocarcinoma is highly resistant to conventional therapeutics and has been shown to evade apoptosis by deregulation of the X-linked and cellular inhibitors of apoptosis proteins (XIAP and cIAP). Second mitochondria-derived activator of caspases (Smac) induces and amplifies cell death by reversing the anti-apoptotic activity of IAPs. Thus, Smac-derived peptide analogues (peptidomimetics) have been developed and shown to represent promising cancer therapeutics. Sigma-2 receptors are overexpressed in many proliferating tumor cells including pancreatic cancer. Selected ligands to this receptor are rapidly internalized by cancer cells. These characteristics have made the sigma-2 receptor an attractive target for drug delivery because selective delivery to cancer cells has the potential to increase therapeutic efficacy while minimizing toxicity to normal tissues. Here, we describe the initial characterization of SW IV-134, a chemically linked drug conjugate between the sigma-2 ligand SW43 and the Smac mimetic SW IV-52 as a novel treatment option for pancreatic adenocarcinoma. The tumor killing characteristics of our dual-domain therapeutic SW IV-134 was far greater than either component in isolation or in an equimolar mix and suggests enhanced cellular delivery when chemically linked to the sigma-2 ligand. One of the key findings was that SW IV-134 retained target selectivity of the Smac cargo with the involvement of the NF-κB/TNFα signaling pathway. Importantly, SW IV-134 slowed tumor growth and improved survival in murine models of pancreatic cancer. Our data support further study of this novel therapeutic and this drug delivery strategy because it may eventually benefit patients with pancreatic cancer.

  5. The Design of the IGE Evaluation Project Phase IV Comparative Studies. Comparative Study of Phase IV IGE Evaluation Project. Phase IV, Project Paper 80-2.

    Science.gov (United States)

    Romberg, Thomas A.; And Others

    This paper outlines the design of two Comparative Studies of Phase IV of the Individually Guided Education (IGE) Evaluation Project. More than 2,000 elementary schools in 25 states use the IGE system. The Evaluation Project was designed to gain a comprehensive view of the system's operation and effectiveness. Phase IV investigated pupil outcomes,…

  6. The MAX IV storage ring project.

    Science.gov (United States)

    Tavares, Pedro F; Leemann, Simon C; Sjöström, Magnus; Andersson, Ake

    2014-09-01

    The MAX IV facility, currently under construction in Lund, Sweden, features two electron storage rings operated at 3 GeV and 1.5 GeV and optimized for the hard X-ray and soft X-ray/VUV spectral ranges, respectively. A 3 GeV linear accelerator serves as a full-energy injector into both rings as well as a driver for a short-pulse facility, in which undulators produce X-ray pulses as short as 100 fs. The 3 GeV ring employs a multibend achromat (MBA) lattice to achieve, in a relatively short circumference of 528 m, a bare lattice emittance of 0.33 nm rad, which reduces to 0.2 nm rad as insertion devices are added. The engineering implementation of the MBA lattice raises several technological problems. The large number of strong magnets per achromat calls for a compact design featuring small-gap combined-function magnets grouped into cells and sharing a common iron yoke. The small apertures lead to a low-conductance vacuum chamber design that relies on the chamber itself as a distributed copper absorber for the heat deposited by synchrotron radiation, while non-evaporable getter (NEG) coating provides for reduced photodesorption yields and distributed pumping. Finally, a low main frequency (100 MHz) is chosen for the RF system yielding long bunches, which are further elongated by passively operated third-harmonic Landau cavities, thus alleviating collective effects, both coherent (e.g. resistive wall instabilities) and incoherent (intrabeam scattering). In this paper, we focus on the MAX IV 3 GeV ring and present the lattice design as well as the engineering solutions to the challenges inherent to such a design. As the first realisation of a light source based on the MBA concept, the MAX IV 3 GeV ring offers an opportunity for validation of concepts that are likely to be essential ingredients of future diffraction-limited light sources.

  7. [Vaughan Williams class IV antiarrhythmic drugs].

    Science.gov (United States)

    Horie, M; Washizuka, T; Ikeguchi, S; Sasayama, S

    1996-08-01

    Vaughan Williams class IV antiarrhythmic drugs have Ca-channel blocking actions. Since L-type Ca-channels play key roles in regulating pulse conduction in atrioventricular node as well as in pathologically-depolarized myocardium, Ca-channel blockers known to modulate this type of Ca-channel (ICa,L) are used as antiarrhythmic agents. ICa,L channels have relatively high threshold potential (-40 mV) to activate and long-opening properties, and are enhanced by beta-adrenergic stimulation. Among three major ICa,L blockers, dihydropyridines such as nifedipine were found to bind to the channel from extracellular side. In contrast, verapamil and diltiazem interact with the channel from the cytoplasmic side, thereby causing rate-dependent block of ICa,L channels. This sideness of pharmacological action of the Ca-channel blockers determines an important therapeutic modality and their indication for tachyarrhythmias.

  8. Ultrathin magnetic structures IV applications of nanomagnetism

    CERN Document Server

    Heinrich, Bretislav

    2004-01-01

    The ability to understand and control the unique properties of interfaces has created an entirely new field of magnetism which already has a profound impact in technology and is providing the basis for a revolution in electronics. The last decade has seen dramatic progress in the development of magnetic devices for information technology but also in the basic understanding of the physics of magnetic nanostructures. Volume III describes thin film magnetic properties and methods for characterising thin film structure topics that underpin the present 'spintronics' revolution in which devices are based on combined magnetic materials and semiconductors. The present volume (IV) deals with the fundamentals of spintronics: magnetoelectronic materials, spin injection and detection, micromagnetics and the development of magnetic random access memory based on GMR and tunnel junction devices. Together these books provide readers with a comprehensive account of an exciting and rapidly developing field. The treatment is de...

  9. Carpentier, la otra novela (cap. IV

    Directory of Open Access Journals (Sweden)

    Urbano Martínez Carmenate

    2014-06-01

    Full Text Available El presente ensayo está extraído de la obra inédita de Urbano Martínez Carmenate, Carpentier, la otra novela (cap. IV. Ofrece una mirada sobre los primeros años de la trayectoria profesional de Alejo Carpentier. Se muestra cómo, durante la década de 1920, se inicia como periodista y cronista teatral. A la vez, comienzan sus conexiones con el Grupo Minorista, que desempeña un papel destacado en la etapa republicana en Cuba. También se contempla su viaje a México en 1926, que constituye su primer contacto directo con la naturaleza y la cultura americanas.

  10. Carpentier, la otra novela (cap. IV

    Directory of Open Access Journals (Sweden)

    Urbano Martínez Carmenate

    2014-07-01

    Full Text Available El presente ensayo está extraído de la obra inédita de Urbano Martínez Carmenate, Carpentier, la otra novela (cap. IV. Ofrece una mirada sobre los primeros años de la trayectoria profesional de Alejo Carpentier. Se muestra cómo, durante la década de 1920, se inicia como periodista y cronista teatral. A la vez, comienzan sus conexiones con el Grupo Minorista, que desempeña un papel destacado en la etapa republicana en Cuba. También se contempla su viaje a México en 1926, que constituye su primer contacto directo con la naturaleza y la cultura americanas.

  11. New mono-organotin (IV) dithiocarbamate complexes

    Science.gov (United States)

    Muthalib, Amirah Faizah Abdul; Baba, Ibrahim

    2014-09-01

    Eighteen new mono-organotin dithiocarbamate compounds derived each nine from methyltin(IV) and phenyltin(IV) reacted using in-situ method with various type of N-dialkylamine together with carbon disulphide with the ratio of 1:3:3. Elemental and gravimetric analysis showed that the general formula of these compounds were RSnCl[S2CNR'R″]2 (R= Ph, CH3, R' = CH3, C2H5, C7H7 and R″ = C2H5, C6H11, iC3H7, C7H7). These compounds had been characterized by infrared spectroscopy, ultraviolet spectroscopy, 1H, 13C NMR spectroscopy and single crystal X-ray crystallography. The infrared spectra of these compounds showed three important peaks indicating the formation of dithiocarbamate compounds, ν(CN), ν(CS) and ν(Sn-S) band which present in the region of 1444-1519, 954-1098 and 318-349 cm-1 respectively. The ultraviolet-visible spectra showed an absorption band for the π - π* transition of NCS group in the range of 253 - 259 nm due to the intramolecular charge transfer of the ligand. The 13C NMR spectra showed an important shift for δ(N13CS2) in the range of 196.8 - 201.9 ppm.. Single crystal X-ray diffraction studies showed three new structures with the general formula of PhSnCl[S2CN(Et)(i-Pr)]2, MeSnCl[S2CN(Me)(Cy)]2 and MeSnCl[S2CN(i-Pr)(CH2Ph)]2. All structures having a distorted octahedral geometry set by CClS4 donor atom from the two chelating dithiocarbamate ligands.

  12. Photovoltaic Effects and Charge Transport Studies in Phycobiliproteins

    Science.gov (United States)

    1993-06-30

    phycobilins are shown in Figure 1. Phycoerythrin (PE). phycocyanin (PC) and allophycocyanin (APC) are the individual biliproteins that self-assemble to form... phycocyanin and (b) phycocrythrin. thin films. The dark current-voltage (I-V) characteristics of ihc Au-proicin-Au samples were determined prior to optical

  13. Biomolecular Materials. Materials Research Society Symposium Proceedings Held in Boston, Massachusetts on December 1-3, 1992. Volume 292

    Science.gov (United States)

    1992-12-03

    phycobilins are shown in Figure 1. Phycoerythrin (PE), phycocyanin (PC) and allophycocyanin (APC) are the individual biliproteins that self-assemble to...3 Absorption spectra of (a) phycocyanin and (b) phycoerythrin, thin films. The dark current-voltage (I-V) characteristics of the Au-protcin-Au samples

  14. Prognostic significance of the combined expression of neutral endopeptidase and dipeptidyl peptidase IV in intrahepatic cholangiocarcinoma patients after surgery resection

    Directory of Open Access Journals (Sweden)

    Zhu JY

    2014-02-01

    Full Text Available Jianyong Zhu,1,* XiaoDong Guo,2,* Baoan Qiu,1 Zhiyan Li,2 Nianxin Xia,1 Yingxiang Yang,1 Peng Liu1 1Department of Hepatobiliary Surgery, Navy General Hospital, PLA, Beijing, People's Republic of China; 2302 Hospital of PLA, Beijing, People's Republic of China *These authors contributed equally to this work Aim: The aim of this study was to investigate the relationship between the expression of neutral endopeptidase (NEP and dipeptidyl peptidase IV (DPP IV proteins, and the clinical significance of the two proteins in patients with intrahepatic cholangiocarcinomas (IHCC. Methods: Expression patterns and subcellular localizations of NEP and DPP IV proteins in 186 primary IHCC and 60 noncancerous liver tissue specimens were detected by immunohistochemistry. Results: Both the expression of NEP and DPP IV proteins in IHCC tissues were significantly higher than those in noncancerous liver tissues (both P<0.001. Of 186 patients with IHCC, 128 (68.82% highly expressed both NEP and DPP IV proteins. In addition, the coexpression of NEP and DPP IV proteins was significantly associated with advanced tumor stage (P=0.009, positive lymph node metastasis (P=0.016 and distant metastasis (P=0.013, and the presence of recurrence (P=0.027. Moreover, Kaplan–Meier analysis showed that IHCC patients with high NEP expression, high DPP IV expression, and combined overexpression of NEP and DPP IV proteins all had poorer overall survival and early recurrence after surgery. Furthermore, Cox analysis suggested that NEP expression, DPP IV expression, and combined expression of NEP and DPP IV proteins were all independent prognostic markers for overall survival and recurrence-free survival in patients with IHCC. Conclusion: Our data suggest, for the first time, that both the expression of NEP and DPP IV proteins may be upregulated in human IHCC tissues and the combined expression of NEP and DPP IV proteins may play important roles in progression and prognosis of patients

  15. Kiddie-SADS Reveals High Rates of DSM-IV Disorders in Children and Adolescents with Autism Spectrum Disorders

    Science.gov (United States)

    Gjevik, Elen; Eldevik, Sigmund; Fjaeran-Granum, Torill; Sponheim, Eili

    2011-01-01

    Prevalence of current comorbid DSM-IV disorders was assessed in a special school population of children and adolescents with ASD (N = 71, age 6.0-17.9 years), representing all cognitive levels and main ASD subgroups. Symptoms were assessed through parent interview and association to child characteristics was explored. Seventy-two percent was…

  16. The structural basis for promoter -35 element recognition by the group IV sigma factors.

    Directory of Open Access Journals (Sweden)

    William J Lane

    2006-09-01

    Full Text Available The control of bacterial transcription initiation depends on a primary sigma factor for housekeeping functions, as well as alternative sigma factors that control regulons in response to environmental stresses. The largest and most diverse subgroup of alternative sigma factors, the group IV extracytoplasmic function sigma factors, directs the transcription of genes that regulate a wide variety of responses, including envelope stress and pathogenesis. We determined the 2.3-A resolution crystal structure of the -35 element recognition domain of a group IV sigma factor, Escherichia coli sigma(E4, bound to its consensus -35 element, GGAACTT. Despite similar function and secondary structure, the primary and group IV sigma factors recognize their -35 elements using distinct mechanisms. Conserved sequence elements of the sigma(E -35 element induce a DNA geometry characteristic of AA/TT-tract DNA, including a rigid, straight double-helical axis and a narrow minor groove. For this reason, the highly conserved AA in the middle of the GGAACTT motif is essential for -35 element recognition by sigma(E4, despite the absence of direct protein-DNA interactions with these DNA bases. These principles of sigma(E4/-35 element recognition can be applied to a wide range of other group IV sigma factors.

  17. Serum type IV collagen level is predictive for esophageal varices in patients with severe alcoholic disease

    Institute of Scientific and Technical Information of China (English)

    Satoshi Mamori; Yasuyuki Searashi; Masato Matsushima; Kenichi Hashimoto; Shinichiro Uetake; Hiroshi Matsudaira; Shuji Ito; Hisato Nakajima; Hisao Tajiri

    2008-01-01

    AIM: To determine factors predictive for esophageal varices in severe alcoholic disease (SAD).METHODS: Abdominal ultrasonography (US) was performed on 444 patients suffering from alcoholism. Forty-four patients found to have splenomegaly and/ or withering of the right liver lobe were defined as those with SAD. SAD patients were examined by upper gastrointestinal (UGI) endoscopy for the presence of esophageal varices. The existence of esophageal varices was then related to clinical variables.RESULTS: Twenty-five patients (56.8%) had esophageal varices. A univariate analysis revealed a significant difference in age and type IV collagen levels between patients with and without esophageal varices. A logistic regression analysis identified type IV collagen as the only independent variable predictive for esophageal varices (P = 0.017). The area under the curve (AUC) for type IV collagen as determined by the receiver operating characteristic (ROC) for predicting esophageal varices was 0.78.CONCLUSION: This study suggests that the level of type IV collagen has a high diagnostic accuracy for the detection of esophageal varices in SAD.

  18. Collagen IV in Normal Skin and in Pathological Processes.

    Science.gov (United States)

    Abreu-Velez, Ana Maria; Howard, Michael S

    2012-01-01

    Type IV collagen is a type of collagen found primarily in the skin within the basement membrane zone. The type IV collagen C4 domain at the C-terminus is not removed in post-translational processing, and the fibers are thus link head-to-head, rather than in a parallel fashion. Also, type IV collagen lacks a glycine in every third amino-acid residue necessary for the tight collagen helix. Thus, the overall collagen-IV conformation is structurally more pliable and kinked, relative to other collagen subtypes. These structural features allow collagen IV to form sheets, which is the primary structural form found in the cutaneous basal lamina. There are six human genes associated with collagen IV, specifically COL4A1, COL4A2, COL4A3, COL4A4, COL4A5 and COL4A6. The aim of this review is to highlight the significance of this protein in normal skin, and in selected diseases. The alpha 3 protein constituent of type IV collagen is thought to be the antigen implicated in Goodpasture's syndrome, wherein the immune system attacks the basement membranes of the renal glomeruli and pulmonary alveoli. In addition, mutations to the genes coding for type IV collagen lead to the Alport syndrome. Furthermore, autoantibodies directed against denatured human type IV collagen have been described in rheumatoid arthritis, scleroderma, and SLE. Structural studies of collagen IV have been utilized to differentiate between subepidermal blistering diseases, including bullous pemphigoid, acquired epidermolysis bullosa, anti-epiligrin cicatricial pemphigoid, and bullous lupus erythematosus. Collagen IV is also of importance in wound healing and in embryogenesis. Pathological studies have demonstrated that minor structural differences in collagen IV can lead to distinct, clinically different diseases.

  19. Attachment of cells to basement membrane collagen type IV

    OpenAIRE

    1986-01-01

    Of ten different cell lines examined, three showed distinct attachment and spreading on collagen IV substrates, and neither attachment nor spreading was enhanced by adding soluble laminin or fibronectin. This reaction was not inhibited by cycloheximide or antibodies to laminin, indicating a direct attachment to collagen IV without the need of mediator proteins. Cell-binding sites were localized to the major triple-helical domain of collagen IV and required an intact triple helical conformatio...

  20. Collagen IV in normal skin and in pathological processes

    Directory of Open Access Journals (Sweden)

    Ana Maria Abreu-Velez

    2012-01-01

    Full Text Available Context: Type IV collagen is a type of collagen found primarily in the skin within the basement membrane zone. The type IV collagen C4 domain at the C-terminus is not removed in post-translational processing, and the fibers are thus link head-to-head, rather than in a parallel fashion. Also, type IV collagen lacks a glycine in every third amino-acid residue necessary for the tight collagen helix. Thus, the overall collagen-IV conformation is structurally more pliable and kinked, relative to other collagen subtypes. These structural features allow collagen IV to form sheets, which is the primary structural form found in the cutaneous basal lamina. There are six human genes associated with collagen IV, specifically COL4A1, COL4A2, COL4A3, COL4A4, COL4A5 and COL4A6. The aim of this review is to highlight the significance of this protein in normal skin, and in selected diseases. Results: The alpha 3 protein constituent of type IV collagen is thought to be the antigen implicated in Goodpasture′s syndrome, wherein the immune system attacks the basement membranes of the renal glomeruli and pulmonary alveoli. In addition, mutations to the genes coding for type IV collagen lead to the Alport syndrome. Furthermore, autoantibodies directed against denatured human type IV collagen have been described in rheumatoid arthritis, scleroderma, and SLE. Structural studies of collagen IV have been utilized to differentiate between subepidermal blistering diseases, including bullous pemphigoid, acquired epidermolysis bullosa, anti-epiligrin cicatricial pemphigoid, and bullous lupus erythematosus. Collagen IV is also of importance in wound healing and in embryogenesis. Conclusions: Pathological studies have demonstrated that minor structural differences in collagen IV can lead to distinct, clinically different diseases.

  1. WISC-IV profile in high-functioning autism spectrum disorders: impaired processing speed is associated with increased autism communication symptoms and decreased adaptive communication abilities.

    Science.gov (United States)

    Oliveras-Rentas, Rafael E; Kenworthy, Lauren; Roberson, Richard B; Martin, Alex; Wallace, Gregory L

    2012-05-01

    Changes in the Wechsler Intelligence Scales for Children-IV (WISC-IV) may affect the IQ profile characteristic of autism spectrum disorders (ASD). Moreover, the association of particular component cognitive abilities (unlike overall IQ) with symptomatology and adaptive functioning in ASD remains unclear. This archival study characterizes the WISC-IV IQ profile among 56 high-functioning (IQ > 70) children with ASD and correlates WISC-IV performance with ASD and ADHD symptomatology and adaptive functioning. The ASD WISC-IV profile included strengths on Matrix Reasoning and Similarities, weaknesses on Comprehension (which correlated negatively with social symptoms) and the subtests comprising the Processing Speed Index (Coding, Symbol Search). Processing speed task performance correlated negatively with communication symptoms and positively with communication abilities, indicating its importance to functional outcomes in ASD.

  2. Evaluation conjointe de la WAIS-IV et de la MEM-IV

    OpenAIRE

    Paumier, Delphine

    2016-01-01

    L’intelligence et la mémoire, composantes essentielles du fonctionnement cognitif, sont régulièrement évaluées lors d’un bilan psychologique. Chez l’adulte, l’intelligence s’évalue avec la WAIS-IV et la mémoire avec la MEM-IV. Dans notre étude, nous avons évalué conjointement ces batteries en administrant leurs sous-tests principaux à 66 personnes âgées de 18 à 50 ans. Comme ces échelles s’interprètent selon des indices distincts, nous proposons d’utiliser le modèle CHC comme grille de lectur...

  3. New titanium(IV and vanadium(IV haloalkoxides: synthetic route and structural characterisation

    Directory of Open Access Journals (Sweden)

    Nunes Giovana G.

    2003-01-01

    Full Text Available The novel binuclear titanium(IV complex [{TiCl(OPr i2(HOPr i }2(mu-OPr i2], 1, and the first mononuclear vanadyl(IV chloroalcoholate [VCl(O(HOPr i4]Cl, 2, have been prepared from 2:1:1 mixtures of [Ti(OPr i4], KOPr i and VCl3. Products were characterised by elemental analysis, FTIR, EPR, NMR and electronic spectroscopies, magnetic susceptibility measurements and single crystal X-ray diffractometry. A third product was found to be polynuclear and to contain both titanium and vanadium. Semi-empirical quantum-mechanical calculations were carried out for the evaluation of the electronic structure of 1.

  4. New titanium(IV) and vanadium(IV) halo alkoxides: synthetic route and structural characterisation

    Energy Technology Data Exchange (ETDEWEB)

    Nunes, Giovana G.; Reis, Dayane M.; Camargo, Pedro H. C.; Mangrich, Antonio S.; Sa, Eduardo L. de; Soares, Jaisa F. [Parana Univ., Curitiba, PR (Brazil). Centro Politecnico. Dept. de Quimica]. E-mail: jaisa@quimica.ufpr.br; Hitchcock, Peter B.; Leigh, G. Jeffery [Sussex Univ., Brighton (United Kingdom). Dept. of Chemistry; Hoerner, Manfredo [Santa Maria Univ., RS (Brazil). Dept. de Quimica; Matos, Robson M. [Minas Gerais Univ., Belo Horizonte, MG (Brazil). Dept. de Quimica

    2003-12-01

    The novel binuclear titanium(IV) complex [{l_brace}Ti Cl(OPr{sup i}){sub 2}(HOPr{sup i} ){r_brace}{sub 2}({mu}-OPr{sup i}){sub 2}], 1, and the first mononuclear vanadyl(IV) chloroalcoholate [VCl(O)(HOPr{sup i}){sub 4}]Cl, 2, have been prepared from 2:1:1 mixtures of [Ti(OPr{sup i}){sub 4}], KOPr{sup i} and VCl{sub 3}. Products were characterised by elemental analysis, FTIR, EPR, NMR and electronic spectroscopies, magnetic susceptibility measurements and single crystal X-ray diffractometry. A third product was found to be polynuclear and to contain both titanium and vanadium. Semi-empirical quantum-mechanical calculations were carried out for the evaluation of the electronic structure of 1. (author)

  5. DNA Ligase IV regulates XRCC4 nuclear localization.

    Science.gov (United States)

    Francis, Dailia B; Kozlov, Mikhail; Chavez, Jose; Chu, Jennifer; Malu, Shruti; Hanna, Mary; Cortes, Patricia

    2014-09-01

    DNA Ligase IV, along with its interacting partner XRCC4, are essential for repairing DNA double strand breaks by non-homologous end joining (NHEJ). Together, they complete the final ligation step resolving the DNA break. Ligase IV is regulated by XRCC4 and XLF. However, the mechanism(s) by which Ligase IV control the NHEJ reaction and other NHEJ factor(s) remains poorly characterized. Here, we show that a C-terminal region of Ligase IV (aa 620-800), which encompasses a NLS, the BRCT I, and the XRCC4 interacting region (XIR), is essential for nuclear localization of its co-factor XRCC4. In Ligase IV deficient cells, XRCC4 showed deregulated localization remaining in the cytosol even after induction of DNA double strand breaks. DNA Ligase IV was also required for efficient localization of XLF into the nucleus. Additionally, human fibroblasts that harbor hypomorphic mutations within the Ligase IV gene displayed decreased levels of XRCC4 protein, implicating that DNA Ligase IV is also regulating XRCC4 stability. Our results provide evidence for a role of DNA Ligase IV in controlling the cellular localization and protein levels of XRCC4.

  6. BALTICA IV. Plant maintenance for managing life and performance

    Energy Technology Data Exchange (ETDEWEB)

    Hietanen, S.; Auerkari, P. [eds.] [VTT Manufacturing Technology, Espoo (Finland). Operational Reliability

    1998-12-31

    BALTICA IV International Conference on Plant Maintenance Managing Life and performance held on September 7-9, 1998 on board M/S Silja Symphony on its cruise between Helsinki-Stockholm and at Aavaranta in Kirkkonummi. The BALTICA IV conference provides a forum for the transfer of technology from applied research to practice. This is one of the two volumes of the proceedings of the BALTICA IV International Conference on Plant Maintenance Managing Life and Performance. The BALTICA IV conference focuses on new technology, recent experience and applications of condition and life management, and on improvements in maintenance strategies for safe and economical operation of power plants. (orig.)

  7. IV therapy and infection control in patients in the community.

    Science.gov (United States)

    Higginson, Ray

    Universal precautions and general infection control measures need to be considered when undertaking any clinical procedure, but when administering intravenous (IV) therapy (medicines and/or maintenance fluids), specific measures need to be considered. This is especially important for vulnerable patients or if administering IV therapy in the home environment. There are many reasons why patients may need to receive IV therapy in the community, and these will all present nurses with specific problems. This article discusses some of the infection control procedures one must undertake when administering IV therapy to patients in the community.

  8. BALTICA IV. Plant maintenance for managing life and performance

    Energy Technology Data Exchange (ETDEWEB)

    Hietanen, S.; Auerkari, P. [eds.] [VTT Manufacturing Technology, Espoo (Finland). Operational Reliability

    1998-12-31

    BALTICA IV International Conference on Plant Maintenance Managing Life and performance held on September 7-9, 1998 on board M/S Silja Symphony on its cruise between Helsinki-Stockholm and at Aavaranta in Kirkkonummi. The BALTICA IV conference provides a forum for the transfer of technology from applied research to practice. This is one of the two volumes of the proceedings of the BALTICA IV International Conference on Plant Maintenance Managing Life and Performance. The BALTICA IV conference focuses on new technology, recent experience and applications of condition and life management, and on improvements in maintenance strategies for safe and economical operation of power plants. (orig.)

  9. The state of Th(IV) in solutions of EDTA

    Energy Technology Data Exchange (ETDEWEB)

    Toropov, I.G.; Davydov, Yu.P.; Toropova, V.V. [Institute of Radioecological, Minsk (Belarus)] [and others

    1996-12-31

    The work was dedicated to determination of the Th(IV) forms in aqueous solutions in the wide ranges of pH and metal ion concentrations, investigation of the Th{sup 4+}-cation hydrolytic polymerization and EDTA anion influence on the Th(IV) state in the solutions. The dialysis, centrifugation, spectrophotometry methods were used to achieve the objectives. It was shown, that concentration of Th(IV) polynuclear form depends on EDTA anion concentration in the solutions. The polynuclear form concentration decreases with the increase of EDTA concentration. The increase of pH shifts the established equilibrium to formation of Th(IV) polynuclear complexes formation.

  10. Type IV collagen-degrading enzyme activity in human serum.

    Directory of Open Access Journals (Sweden)

    Hashimoto,Noriaki

    1988-02-01

    Full Text Available Type IV collagen-degrading enzyme activity was detected in human serum. Serum was preincubated with 4-aminophenylmercuric acetate and trypsin to activate the enzyme prior to assay. Type IV collagen, purified from human placentas and radiolabeled with [1-14C] acetic anhydride, was used as the substrate. The enzyme activity was measured at pH 7.5 and inhibited by treatment with ethylenediaminetetraacetic acid or heat. The assay of type IV collagen-degrading enzyme in human serum might be useful for estimating the degradation of type IV collagen.

  11. Two-dimensional multiferroics in monolayer group IV monochalcogenides

    Science.gov (United States)

    Wang, Hua; Qian, Xiaofeng

    2017-03-01

    Low-dimensional multiferroic materials hold great promises in miniaturized device applications such as nanoscale transducers, actuators, sensors, photovoltaics, and nonvolatile memories. Here, using first-principles theory we predict that two-dimensional (2D) monolayer group IV monochalcogenides including GeS, GeSe, SnS, and SnSe are a class of 2D semiconducting multiferroics with giant strongly-coupled in-plane spontaneous ferroelectric polarization and spontaneous ferroelastic lattice strain that are thermodynamically stable at room temperature and beyond, and can be effectively modulated by elastic strain engineering. Their optical absorption spectra exhibit strong in-plane anisotropy with visible-spectrum excitonic gaps and sizable exciton binding energies, rendering the unique characteristics of low-dimensional semiconductors. More importantly, the predicted low domain wall energy and small migration barrier together with the coupled multiferroic order and anisotropic electronic structures suggest their great potentials for tunable multiferroic functional devices by manipulating external electrical, mechanical, and optical field to control the internal responses, and enable the development of four device concepts including 2D ferroelectric memory, 2D ferroelastic memory, and 2D ferroelastoelectric nonvolatile photonic memory as well as 2D ferroelectric excitonic photovoltaics.

  12. Toward Phase IV, Populating the WOVOdat Database

    Science.gov (United States)

    Ratdomopurbo, A.; Newhall, C. G.; Schwandner, F. M.; Selva, J.; Ueda, H.

    2009-12-01

    One of challenges for volcanologists is the fact that more and more people are likely to live on volcanic slopes. Information about volcanic activity during unrest should be accurate and rapidly distributed. As unrest may lead to eruption, evacuation may be necessary to minimize damage and casualties. The decision to evacuate people is usually based on the interpretation of monitoring data. Over the past several decades, monitoring volcanoes has used more and more sophisticated instruments. A huge volume of data is collected in order to understand the state of activity and behaviour of a volcano. WOVOdat, The World Organization of Volcano Observatories (WOVO) Database of Volcanic Unrest, will provide context within which scientists can interpret the state of their own volcano, during and between crises. After a decision during the 2000 IAVCEI General Assembly to create WOVOdat, development has passed through several phases, from Concept Development (Phase-I in 2000-2002), Database Design (Phase-II, 2003-2006) and Pilot Testing (Phase-III in 2007-2008). For WOVOdat to be operational, there are still two (2) steps to complete, which are: Database Population (Phase-IV) and Enhancement and Maintenance (Phase-V). Since January 2009, the WOVOdat project is hosted by Earth Observatory of Singapore for at least a 5-year period. According to the original planning in 2002, this 5-year period will be used for completing the Phase-IV. As the WOVOdat design is not yet tested for all types of data, 2009 is still reserved for building the back-end relational database management system (RDBMS) of WOVOdat and testing it with more complex data. Fine-tuning of the WOVOdat’s RDBMS design is being done with each new upload of observatory data. The next and main phase of WOVOdat development will be data population, managing data transfer from multiple observatory formats to WOVOdat format. Data population will depend on two important things, the availability of SQL database in volcano

  13. New mono-organotin (IV) dithiocarbamate complexes

    Energy Technology Data Exchange (ETDEWEB)

    Muthalib, Amirah Faizah Abdul; Baba, Ibrahim [School of Chemical Sciences and Food Technology, Faculty of Science and Technology, Universiti Kebangsaan Malaysia, 43600 Bangi (Malaysia)

    2014-09-03

    Eighteen new mono-organotin dithiocarbamate compounds derived each nine from methyltin(IV) and phenyltin(IV) reacted using in-situ method with various type of N-dialkylamine together with carbon disulphide with the ratio of 1:3:3. Elemental and gravimetric analysis showed that the general formula of these compounds were RSnCl[S{sub 2}CNR′R″]{sub 2} (R= Ph, CH{sub 3}, R′ = CH{sub 3}, C{sub 2}H{sub 5}, C{sub 7}H{sub 7} and R″ = C{sub 2}H{sub 5}, C{sub 6}H{sub 11}, iC{sub 3}H{sub 7}, C{sub 7}H{sub 7}). These compounds had been characterized by infrared spectroscopy, ultraviolet spectroscopy, {sup 1}H, {sup 13}C NMR spectroscopy and single crystal X-ray crystallography. The infrared spectra of these compounds showed three important peaks indicating the formation of dithiocarbamate compounds, ν(CN), ν(CS) and ν(Sn-S) band which present in the region of 1444–1519, 954–1098 and 318–349 cm{sup −1} respectively. The ultraviolet-visible spectra showed an absorption band for the π - π* transition of NCS group in the range of 253 – 259 nm due to the intramolecular charge transfer of the ligand. The {sup 13}C NMR spectra showed an important shift for δ(N{sup 13}CS{sub 2}) in the range of 196.8 – 201.9 ppm.. Single crystal X-ray diffraction studies showed three new structures with the general formula of PhSnCl[S{sub 2}CN(Et)(i−Pr)]{sub 2}, MeSnCl[S{sub 2}CN(Me)(Cy)]{sub 2} and MeSnCl[S{sub 2}CN(i−Pr)(CH{sub 2}Ph)]{sub 2}. All structures having a distorted octahedral geometry set by CClS{sub 4} donor atom from the two

  14. Numerical Analysis on Current Transport Characteristics in Single Layer Organic Electroluminescent Devices

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    A new model to describe I-V characteristics of organic light-emitting devices (OLEDs) is developed based on experimental results. The dependence of I-V characteristics on energy barrier, trap density and carrier mobility is analyzed. The result shows that this model combines the Fowler-Nordheim tunnel theory and the trap charge limited current theory with exponential trap distribution (TCL), and it describes the current transport characteristics of OLEDs more comprehensively. The I-V characteristics follow Fowler-Nordheim theory when the energy barrier is high, the trap density is small and the carrier mobility is large.In other cases they follow the TCL theory.

  15. Determination of torque speed current characteristics of a brushless DC motor by utilizing back-EMF of non-energized phase

    Science.gov (United States)

    Jang, G. H.; Yeom, J. H.; Kim, M. G.

    2007-03-01

    This paper presents a method to determine the torque constant and the torque-speed-current characteristics of a brushless DC (BLDC) motor by utilizing back-EMF variation of nonenergized phase. It also develops a BLDC motor controller with a digital signal processor (DSP) to monitor its current, voltage and speed in real time. Torque-speed-current characteristics of a BLDC motor are determined by using the proposed method and the developed controller. They are compared with the torque-speed-current characteristics measured by dynamometer experimentally. This research shows that the proposed method is an effective method to determine the torque constant and the torque-speed-current characteristics of the BLDC motor without using dynamometer.

  16. Determination of torque-speed-current characteristics of a brushless DC motor by utilizing back-EMF of non-energized phase

    Energy Technology Data Exchange (ETDEWEB)

    Jang, G.H. [Department of Mechanical Engineering, Hanyang University, 17 Haengdangdong, Seongdonggu, Seoul 133-791 (Korea, Republic of)]. E-mail: ghjang@hanyang.ac.kr; Yeom, J.H. [Department of Mechanical Engineering, Hanyang University, 17 Haengdangdong, Seongdonggu, Seoul 133-791 (Korea, Republic of); Kim, M.G. [Department of Mechanical Engineering, Hanyang University, 17 Haengdangdong, Seongdonggu, Seoul 133-791 (Korea, Republic of)

    2007-03-15

    This paper presents a method to determine the torque constant and the torque-speed-current characteristics of a brushless DC (BLDC) motor by utilizing back-EMF variation of nonenergized phase. It also develops a BLDC motor controller with a digital signal processor (DSP) to monitor its current, voltage and speed in real time. Torque-speed-current characteristics of a BLDC motor are determined by using the proposed method and the developed controller. They are compared with the torque-speed-current characteristics measured by dynamometer experimentally. This research shows that the proposed method is an effective method to determine the torque constant and the torque-speed-current characteristics of the BLDC motor without using dynamometer.

  17. A classification system for O-B2 stars based on the Si IV and C IV resonance lines

    Science.gov (United States)

    Henize, K. G.; Wray, J. D.; Parsons, S. B.

    1981-01-01

    Low-dispersion ultraviolet spectra from Skylab Experiment S-019 are used to explore the variations of Si IV and C IV line strengths with temperature and luminosity. These considerations lead to a classification system in which the Si/C ratio is used to discriminate luminosity among the O stars and temperature among the O9-B2 stars of lower luminosity. Stars falling in these two regimes may be distinguished either by the presence of C IV emission or on the basis of C IV absorption strength. The log(Si IV/C IV) vs C IV diagram is proposed as a primary tool in such a classification system. The rapid variation in the Si IV/C IV ratio from less than 1/10 at O9 to greater than 10 at B1.5 for luminosity class III-V stars appears to be an especially useful criterion for the temperature classification of stars in this spectral range.

  18. A comparison between IV paracetamol and IV metamizol for postoperative analgesia after retinal surgery.

    Science.gov (United States)

    Landwehr, Susanne; Kiencke, Peter; Giesecke, Thorsten; Eggert, Dirk; Thumann, Gabriele; Kampe, Sandra

    2005-10-01

    To assess clinical efficacy of IV paracetamol 1 g and IV metamizol 1 IV metamizol 1 g on a 24-h dosing schedule in this randomized, double-blinded, placebo-controlled study of 38 ASA physical status I-III patients undergoing retinal surgery. General anaesthesia using remifentanil, propofol, and desflurane was performed for surgery. The patients were randomly allocated to three groups, receiving infusions of paracetamol 1 g/100 mL (Para Group), of metamizol 1 g/100 mL (Meta Group), or of 100 mL of saline solution as placebo control (Plac Group) 30 min before arrival in the recovery area and every 6 h up to 24 h postoperatively. All patients had unrestricted access to intravenous opioid rescue medication. The primary efficacy variables were pain scores at rest over 30 h postoperatively analysed by using repeated ANOVA measurement. Secondary efficacy variables were pain scores on coughing, also analysed by repeated ANOVA measurement. Five patients in the Plac Group and one patient in the Meta Group interrupted the study protocol. Regarding pain scores at rest, Mauchly-test of sphericity was significant (p = 0.03). For the p time effects a significant result was detected (p metamizol (p = 0.025; mean difference 14.4; 95% CI p 1.5-27.4), and no significant difference between the Para Group and the Meta Group (p = 1.0; mean difference 0.4; 95% CI-12.8 to 13.6). Pain scores on coughing showed a significant different main effect between the three treatment groups (p = 0.022). The Bonferroni adjusted pair wise comparisons between the Plac Group and the Para Group showed a significant difference in favour of IV paracetamol (p = 0.032; mean difference 17.9; 95% CI 1.3-34.6), a p difference, though not reaching statistical significance, in favour of IV metamizol between the Plac Group and the Meta Group (p = 0.081; p mean difference 15.0; 95% CI -1.4 to 31.4), and no significant difference between the Para Group and the Meta Group (p = 1.0; p mean difference 2.9; 95% CI -13

  19. Quantitative neuroimaging in mucolipidosis type IV.

    Science.gov (United States)

    Schiffmann, Raphael; Mayfield, Joan; Swift, Caren; Nestrasil, Igor

    2014-02-01

    Mucolipidosis type IV (MLIV) is an autosomal recessive disorder resulting from mutations in the MCOLN1 gene. This gene encodes the endosomal/lysosomal transient receptor potential channel protein mucolipin-1 (TRPML1). Affected patients suffer from neurodevelopmental abnormalities and progressive retinal dystrophy. In a prospective natural history study we hypothesized the presence of an additional slow cerebral neurodegenerative process. We have recruited 5 patients, tested their neurodevelopmental status, and measured cerebral regional volumes and white matter integrity using MRI yearly. Over a period of up to 3 years, MLIV patients remained neurologically stable. There was a trend for increased cortical and subcortical gray matter volumes and increased ventricular size, while white matter and cerebellar volumes decreased. Mean diffusivity (MD) was increased and fractional anisotropy (FA) values were below normal in all analyzed brain regions. There was a positive correlation between motor scores of the Vineland Scale and the FA values in the corticospinal tract (corr coef 0.39), and a negative correlation with the MD values (corr coef -0.50) in the same brain region. We conclude from these initial findings that deficiency in mucolipin-1 affects the entire brain but that there might be a selective regional cerebral neurodegenerative process in MLIV. In addition, these data suggest that diffusion-weighted imaging might be a good biomarker for following patients with MLIV. Therefore, our findings may be helpful for designing future clinical trials.

  20. [Summary of the Profiles of 22 Children with Traumatic Brain Injury Tacted with the Japanese Version of the WISC-IV].

    Science.gov (United States)

    Kamikubo, Takeshi; Hashimoto, Keiji; Kamide, Anri; Takekoh, Makoto; Ikeda, Natsuha

    2015-08-01

    The Japanese version of the Wechsler intelligence scale for children-fourth edition (WISC-IV) is often used to assess cognitive dysfunction in children with traumatic brain injury (TBI). To reveal the characteristics of cognitive impairment in pediatric TBI, we retrospectively analyzed the results of 22 children with TBI on the WISC-IV that was conducted at the Developmental Evaluation Center of the National Center for Child Health and Development over three years from July 2011 to July 2014. It has been hypothesized that the WISC-IV is limited for revealing neuropsychological dysfunction after traumatic brain injury.