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Sample records for current-voltage i-v measurements

  1. Two distinct voltage-sensing domains control voltage sensitivity and kinetics of current activation in CaV1.1 calcium channels.

    Science.gov (United States)

    Tuluc, Petronel; Benedetti, Bruno; Coste de Bagneaux, Pierre; Grabner, Manfred; Flucher, Bernhard E

    2016-06-01

    Alternative splicing of the skeletal muscle CaV1.1 voltage-gated calcium channel gives rise to two channel variants with very different gating properties. The currents of both channels activate slowly; however, insertion of exon 29 in the adult splice variant CaV1.1a causes an ∼30-mV right shift in the voltage dependence of activation. Existing evidence suggests that the S3-S4 linker in repeat IV (containing exon 29) regulates voltage sensitivity in this voltage-sensing domain (VSD) by modulating interactions between the adjacent transmembrane segments IVS3 and IVS4. However, activation kinetics are thought to be determined by corresponding structures in repeat I. Here, we use patch-clamp analysis of dysgenic (CaV1.1 null) myotubes reconstituted with CaV1.1 mutants and chimeras to identify the specific roles of these regions in regulating channel gating properties. Using site-directed mutagenesis, we demonstrate that the structure and/or hydrophobicity of the IVS3-S4 linker is critical for regulating voltage sensitivity in the IV VSD, but by itself cannot modulate voltage sensitivity in the I VSD. Swapping sequence domains between the I and the IV VSDs reveals that IVS4 plus the IVS3-S4 linker is sufficient to confer CaV1.1a-like voltage dependence to the I VSD and that the IS3-S4 linker plus IS4 is sufficient to transfer CaV1.1e-like voltage dependence to the IV VSD. Any mismatch of transmembrane helices S3 and S4 from the I and IV VSDs causes a right shift of voltage sensitivity, indicating that regulation of voltage sensitivity by the IVS3-S4 linker requires specific interaction of IVS4 with its corresponding IVS3 segment. In contrast, slow current kinetics are perturbed by any heterologous sequences inserted into the I VSD and cannot be transferred by moving VSD I sequences to VSD IV. Thus, CaV1.1 calcium channels are organized in a modular manner, and control of voltage sensitivity and activation kinetics is accomplished by specific molecular mechanisms

  2. Design and test of voltage and current probes for EAST ICRF antenna impedance measurement

    Science.gov (United States)

    Jianhua, WANG; Gen, CHEN; Yanping, ZHAO; Yuzhou, MAO; Shuai, YUAN; Xinjun, ZHANG; Hua, YANG; Chengming, QIN; Yan, CHENG; Yuqing, YANG; Guillaume, URBANCZYK; Lunan, LIU; Jian, CHENG

    2018-04-01

    On the experimental advanced superconducting tokamak (EAST), a pair of voltage and current probes (V/I probes) is installed on the ion cyclotron radio frequency transmission lines to measure the antenna input impedance, and supplement the conventional measurement technique based on voltage probe arrays. The coupling coefficients of V/I probes are sensitive to their sizes and installing locations, thus they should be determined properly to match the measurement range of data acquisition card. The V/I probes are tested in a testing platform at low power with various artificial loads. The testing results show that the deviation of coupling resistance is small for loads R L > 2.5 Ω, while the resistance deviations appear large for loads R L phase measurement error is the more significant factor leads to deleterious results rather than the amplitude measurement error. To exclude the possible ingredients that may lead to phase measurement error, the phase detector can be calibrated in steady L-mode scenario and then use the calibrated data for calculation under H-mode cases in EAST experiments.

  3. A 1.8 V LDO voltage regulator with foldback current limit and thermal protection

    International Nuclear Information System (INIS)

    Liu Zhiming; Fu Zhongqian; Huang Lu; Xi Tianzuo

    2009-01-01

    This paper introduces the design of a l.8 V low dropout voltage regulator (LDO) and a foldback current limit circuit which limits the output current to 3 mA when load over-current occurs. The LDO was implemented in a 0.18 μm CMOS technology. The measured result reveals that the LDO's power supply rejection (PSR) is about -58 dB and -54 dB at 20 Hz and 1 kHz respectively, the response time is 4 μs and the quiescent current is 20 μA. The designed LDO regulator can work with a supply voltage down to 2.0 V with a drop-out voltage of 200 mV at a maximum load current of 240 mA. (semiconductor integrated circuits)

  4. Current-voltage curves of gold quantum point contacts revisited

    DEFF Research Database (Denmark)

    Hansen, K.; Nielsen, S K.; Brandbyge, Mads

    2000-01-01

    We present measurements of current-voltage (I-V) curves on gold quantum point contacts (QPCs) with a conductance up to 4 G(0) (G(0) = 2e(2)/h is the conductance quantum) and voltages up to 2 V. The QPCs are formed between the gold tip of a scanning tunneling microscope and a Au(110) surface under...

  5. A 1.8 V LDO voltage regulator with foldback current limit and thermal protection

    Energy Technology Data Exchange (ETDEWEB)

    Liu Zhiming; Fu Zhongqian; Huang Lu; Xi Tianzuo, E-mail: zml1985@mail.ustc.edu.c [Department of Electronic Science and Technology, University of Science and Technology of China, Hefei 230027 (China)

    2009-08-15

    This paper introduces the design of a l.8 V low dropout voltage regulator (LDO) and a foldback current limit circuit which limits the output current to 3 mA when load over-current occurs. The LDO was implemented in a 0.18 {mu}m CMOS technology. The measured result reveals that the LDO's power supply rejection (PSR) is about -58 dB and -54 dB at 20 Hz and 1 kHz respectively, the response time is 4 {mu}s and the quiescent current is 20 {mu}A. The designed LDO regulator can work with a supply voltage down to 2.0 V with a drop-out voltage of 200 mV at a maximum load current of 240 mA. (semiconductor integrated circuits)

  6. The role of bulk and interface states on performance of a-Si: H p-i-n solar cells using reverse current-voltage technique

    International Nuclear Information System (INIS)

    Mahmood, S A; Kabir, M Z; Murthy, R V R; Dutta, V

    2009-01-01

    The defect state densities in the bulk of the i-layer and at the p/i interface have been studied in hydrogenated amorphous silicon (a-Si : H) solar cells using reverse current-voltage (J-V) measurements. In this work the cells have been soaked with blue and red lights prior to measurements. The voltage-dependent reverse current has been analysed on the basis of thermal generation of the carriers from midgap states in the i-layer and the carrier injection through the p/i interface. Based on the reverse current behaviour, it has been analysed that at lower reverse bias (reverse voltage, V r r ∼ 25 V) the defect states at the p/i interface are contributing to the reverse currents. The applied reverse bias annealing (RBA) treatment on these cells shows more significant annihilation of defect states at the p/i interface as compared with the bulk of the i-layer. An analytical model is developed to explain the observed behaviour. There is good agreement between the theory and the experimental observations. The fitted defect state densities are 9.1 x 10 15 cm -3 and 8 x 10 18 cm -3 in the bulk of the i-layer and near the p/i interface, respectively. These values decrease to 2.5 x 10 15 cm -3 and 6 x 10 17 cm -3 , respectively, in the samples annealed under reverse bias at 2 V.

  7. Current-voltage characteristics of C70 solid near Meyer-Neldel temperature

    Science.gov (United States)

    Onishi, Koichi; Sezaimaru, Kouki; Nakashima, Fumihiro; Sun, Yong; Kirimoto, Kenta; Sakaino, Masamichi; Kanemitsu, Shigeru

    2017-06-01

    The current-voltage characteristics of the C70 solid with hexagonal closed-packed structures were measured in the temperature range of 250-450 K. The current-voltage characteristics can be described as a temporary expedient by a cubic polynomial of the voltage, i = a v 3 + b v 2 + c v + d . Moreover, the Meyer-Neldel temperature of the C70 solid was confirmed to be 310 K, at which a linear relationship between the current and voltage was observed. Also, at temperatures below the Meyer-Neldel temperature, the current increases with increasing voltage. On the other hand, at temperatures above the Meyer-Neldel temperature a negative differential conductivity effect was observed at high voltage side. The negative differential conductivity was related to the electric field and temperature effects on the mobility of charge carrier, which involve two variations in the carrier concentration and the activation energy for carrier hopping transport.

  8. Contamination of current-clamp measurement of neuron capacitance by voltage-dependent phenomena

    Science.gov (United States)

    White, William E.

    2013-01-01

    Measuring neuron capacitance is important for morphological description, conductance characterization, and neuron modeling. One method to estimate capacitance is to inject current pulses into a neuron and fit the resulting changes in membrane potential with multiple exponentials; if the neuron is purely passive, the amplitude and time constant of the slowest exponential give neuron capacitance (Major G, Evans JD, Jack JJ. Biophys J 65: 423–449, 1993). Golowasch et al. (Golowasch J, Thomas G, Taylor AL, Patel A, Pineda A, Khalil C, Nadim F. J Neurophysiol 102: 2161–2175, 2009) have shown that this is the best method for measuring the capacitance of nonisopotential (i.e., most) neurons. However, prior work has not tested for, or examined how much error would be introduced by, slow voltage-dependent phenomena possibly present at the membrane potentials typically used in such work. We investigated this issue in lobster (Panulirus interruptus) stomatogastric neurons by performing current clamp-based capacitance measurements at multiple membrane potentials. A slow, voltage-dependent phenomenon consistent with residual voltage-dependent conductances was present at all tested membrane potentials (−95 to −35 mV). This phenomenon was the slowest component of the neuron's voltage response, and failure to recognize and exclude it would lead to capacitance overestimates of several hundredfold. Most methods of estimating capacitance depend on the absence of voltage-dependent phenomena. Our demonstration that such phenomena make nonnegligible contributions to neuron responses even at well-hyperpolarized membrane potentials highlights the critical importance of checking for such phenomena in all work measuring neuron capacitance. We show here how to identify such phenomena and minimize their contaminating influence. PMID:23576698

  9. Measurements of Voltage Harmonics in 400 kV Transmission Network

    Directory of Open Access Journals (Sweden)

    Ryszard Pawełek

    2014-06-01

    Full Text Available The paper deals with the analysis of voltage harmonics measurements performed in the 400 kV transmission network. The voltage was measured by means of three transducers: resistive voltage divider, inductive measuring transformer and capacitive voltage measuring transformer. Instrument errors were estimated for measuring transformers with reference to the harmonic values obtained from the voltage divider.

  10. Current-Voltage Characteristics of Quasi-One-Dimensional Superconductors

    DEFF Research Database (Denmark)

    Vodolazov, D.Y.; Peeters, F.M.; Piraux, L.

    2003-01-01

    The current-voltage (I-V) characteristics of quasi-one-dimensional superconductors were discussed. The I-V characteristics exhibited an unusual S behavior. The dynamics of superconducting condensate and the existence of two different critical currents resulted in such an unusual behavior....

  11. Possible influence of the voltage dependence of the Josephson tunneling current I(V,psi) on the corresponding current-voltage characteristic

    International Nuclear Information System (INIS)

    Hahlbohm, H.D.; Luebbig, H.; Luther, H.

    1975-01-01

    Analog computer calculations of the current-voltage characteristic involving the voltage dependence of the amplitudes of the tunneling current equation explicitly, for the case of a current driven tunneling junction at different temperatures are reported on. These studies are based upon the adiabatic representation of the current-phase relation. The influence of retarding effects is not included. Therefore the computational results can lead to practical consequences at best in the range near the transition temperature. (Auth.)

  12. Modulation of voltage-gated channel currents by harmaline and harmane.

    Science.gov (United States)

    Splettstoesser, Frank; Bonnet, Udo; Wiemann, Martin; Bingmann, Dieter; Büsselberg, Dietrich

    2005-01-01

    Harmala alkaloids are endogenous substances, which are involved in neurodegenerative disorders such as M. Parkinson, but some of them also have neuroprotective effects in the nervous system. While several sites of action at the cellular level (e.g. benzodiazepine receptors, 5-HT and GABA(A) receptors) have been identified, there is no report on how harmala alkaloids interact with voltage-gated membrane channels. The aim of this study was to investigate the effects of harmaline and harmane on voltage-activated calcium- (I(Ca(V))), sodium- (I(Na(V))) and potassium (I(K(V)))-channel currents, using the whole-cell patch-clamp method with cultured dorsal root ganglion neurones of 3-week-old rats. Currents were elicited by voltage steps from the holding potential to different command potentials. Harmaline and harmane reduced I(Ca(V)), I(Na(V)) and I(K(V)) concentration-dependent (10-500 microM) over the voltage range tested. I(Ca(V)) was reduced with an IC(50) of 100.6 microM for harmaline and by a significantly lower concentration of 75.8 microM (P<0.001, t-test) for harmane. The Hill coefficient was close to 1. Threshold concentration was around 10 microM for both substances. The steady state of inhibition of I(Ca(V)) by harmaline or harmane was reached within several minutes. The action was not use-dependent and at least partly reversible. It was mainly due to a reduction in the sustained calcium channel current (I(Ca(L+N))), while the transient voltage-gated calcium channel current (I(Ca(T))) was only partially affected. We conclude that harmaline and harmane are modulators of I(Ca(V)) in vitro. This might be related to their neuroprotective effects.

  13. Dynamic voltage-current characteristics for a water jet plasma arc

    International Nuclear Information System (INIS)

    Yang Jiaxiang; Lan Sheng; Xu Zuoming

    2008-01-01

    A virtual instrument technology is used to measure arc current, arc voltage, dynamic V-I characteristics, and nonlinear conductance for a cone-shaped water jet plasma arc under ac voltage. Experimental results show that ac arc discharge mainly happens in water vapor evaporated from water when heated. However, due to water's cooling effect and its conductance, arc conductance, reignition voltage, extinguish voltage, and current zero time are very different from those for ac arc discharge in gas work fluid. These can be valuable to further studies on mechanism and characteristics of plasma ac discharge in water, and even in gas work fluid

  14. Current voltage perspective of an organic electronic device

    Science.gov (United States)

    Mukherjee, Ayash K.; Kumari, Nikita

    2018-05-01

    Nonlinearity in current (I) - voltage (V) measurement is a well-known attribute of two-terminal organic device, irrespective of the geometrical or structural arrangement of the device. Most of the existing theories that are developed for interpretation of I-V data, either focus current-voltage relationship of charge injection mechanism across the electrode-organic material interface or charge transport mechanism through the organic active material. On the contrary, both the mechanisms work in tandem charge conduction through the device. The transport mechanism is further complicated by incoherent scattering from scattering centres/charge traps that are located at the electrode-organic material interface and in the bulk of organic material. In the present communication, a collective expression has been formulated that comprises of all the transport mechanisms that are occurring at various locations of a planar organic device. The model has been fitted to experimental I-V data of Au/P3HT/Au device with excellent degree of agreement. Certain physical parameters such as the effective area of cross-section and resistance due to charge traps have been extracted from the fit.

  15. Features of current-voltage characteristic of nonequilibrium trench MOS barrier Schottky diode

    Science.gov (United States)

    Mamedov, R. K.; Aslanova, A. R.

    2018-06-01

    The trench MOS barrier Schottky diodes (TMBS diode) under the influence of the voltage drop of the additional electric field (AEF) appearing in the near-contact region of the semiconductor are in a nonequilibrium state and their closed external circuit flows currents in the absence of an external voltage. When an external voltage is applied to the TMBS diode, the current transmission is described by the thermionic emission theory with a specific feature. Both forward and reverse I-V characteristics of the TMBS diode consist of two parts. In the initial first part of the forward I-V characteristic there are no forward currents, but reverse saturation currents flow, in its subsequent second part the currents increase exponentially with the voltage. In the initial first part of the reverse I-V characteristic, the currents increase in an abrupt way and in the subsequent second part the saturation currents flow under the action of the image force. The mathematical expressions for forward and reverse I-V characteristic of the TMBS diode and also narrow or nanostructure Schottky diode are proposed, which are in good agreement with the results of experimental and calculated I-V characteristics.

  16. LED Current Balance Using a Variable Voltage Regulator with Low Dropout vDS Control

    Directory of Open Access Journals (Sweden)

    Hung-I Hsieh

    2017-02-01

    Full Text Available A cost-effective light-emitting diode (LED current balance strategy using a variable voltage regulator (VVR with low dropout vDS control is proposed. This can regulate the multiple metal-oxide-semiconductor field-effect transistors (MOSFETs of the linear current regulators (LCR, maintaining low dropout vDS on the flat vGS-characteristic curves and making all drain currents almost the same. Simple group LCRs respectively loaded with a string LED are employed to implement the theme. The voltage VVdc from a VVR is synthesized by a string LED voltage NvD, source voltage vR, and a specified low dropout vDS = VQ. The VVdc updates instantly, through the control loop of the master LCR, which means that all slave MOSFETs have almost the same biases on their flat vGS-characteristic curves. This leads to all of the string LED currents being equal to each other, producing an almost even luminance. An experimental setup with microchip control is built to verify the estimations. Experimental results show that the luminance of all of the string LEDs are almost equal to one another, with a maximum deviation below 1% during a wide dimming range, while keeping all vDS of the MOSFETs at a low dropout voltage, as expected.

  17. Radiation effects on the current-voltage and capacitance-voltage characteristics of advanced p-n junction diodes surrounded by shallow trench isolation

    International Nuclear Information System (INIS)

    Poyai, A.; Simoen, E.; Claeys, C.; Hayama, K.; Kobayashi, K.; Ohyama, H.

    2002-01-01

    This paper investigates the impact of 20 MeV proton irradiation on the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of different geometry n + -p-well junction diodes surrounded by shallow trench isolation and processed in a 0.18 μm CMOS technology. From I-V characteristics, a higher current damage coefficient was found for the bulk than for the peripheral component. The radiation-induced boron de-activation resulted in a lowering of the p-well doping, which has been derived from high-frequency C-V measurements. This was confirmed by deep level transient spectroscopy (DLTS) analysis, revealing the presence of interstitial boron related radiation defects. As will be demonstrated for the bulk leakage-current damage coefficient, the electric field enhanced generation rate of charge carriers and the radiation-induced boron de-activation should be accounted for properly

  18. Improvements in DC Current-Ioltage (I-V) Characteristics of n-GaN Schottky Diode using Metal Overlap Edge Termination

    International Nuclear Information System (INIS)

    Munir, T.; Aziz, A. A.; Abdullah, M. J.; Ain, M. F.

    2010-01-01

    Practical design of GaN Schottky diodes incorporating a field plate necessitates an understanding of how the addition of such plate affects the diode performance. In this paper, we investigated the effects on DC current-voltage (I-V) characteristics of n-GaN schottky diode by incorporating metal overlap edge termination. The thickness of the oxide film varies from 0.001 to 1 micron. Two-dimensional Atlas/Blaze simulations revealed that severe electric field crowding across the metal semiconductor contact will cause reliability concern and limit device breakdown voltage. DC current-voltage (I-V) measurements indicate that the forward currents are higher for thinner oxide film schottky diodes with metal overlap edge termination than those of unterminated schottky diodes. The forward current increased due to formation of an accumulation layer underneath the oxide layer. Extending the field plate to beyond periphery regions of schottky contact does not result in any significant increase in forward current. The new techniques of ramp oxide metal overlap edge termination have been implemented to increase the forward current of n-GaN schottky diode. In reverse bias, breakdown voltage increased with edge termination oxide up to a certain limit of oxide thickness.

  19. Optical sensors for the measurement of electric current and voltage

    Energy Technology Data Exchange (ETDEWEB)

    Rutgers, W R; Hulshof, H J.M.; Laurensse, I J; van der Wey, A H

    1987-01-01

    Optical sensors for the measurement of electrical current and voltage were developed for application in electric power systems. The current sensor, based on the Faraday effect in a monomode glass fiber, and the voltage sensor, based on the transverse Pockels effect in a crystal, are demonstrated in wide-band (10 MHz) interference-free measurements of pulsed currents and impulse voltages.

  20. Current-Voltage Characteristics of the Metal / Organic Semiconductor / Metal Structures: Top and Bottom Contact Configuration Case

    Directory of Open Access Journals (Sweden)

    Šarūnas MEŠKINIS

    2013-03-01

    Full Text Available In present study five synthesized organic semiconductor compounds have been used for fabrication of the planar metal / organic semiconductor / metal structures. Both top electrode and bottom electrode configurations were used. Current-voltage (I-V characteristics of the samples were investigated. Effect of the hysteresis of the I-V characteristics was observed for all the investigated samples. However, strength of the hysteresis was dependent on the organic semiconductor used. Study of I-V characteristics of the top contact Al/AT-RB-1/Al structures revealed, that in (0 – 500 V voltages range average current of the samples measured in air is only slightly higher than current measured in nitrogen ambient. Deposition of the ultra-thin diamond like carbon interlayer resulted in both decrease of the hysteresis of I-V characteristics of top contact Al/AT-RB-1/Al samples. However, decreased current and decreased slope of the I-V characteristics of the samples with diamond like carbon interlayer was observed as well. I-V characteristic hysteresis effect was less pronounced in the case of the bottom contact metal/organic semiconductor/metal samples. I-V characteristics of the bottom contact samples were dependent on electrode metal used.DOI: http://dx.doi.org/10.5755/j01.ms.19.1.3816

  1. Current regulators for I/SUP 2/L circuits to be operated from low-voltage power supplies

    DEFF Research Database (Denmark)

    Bruun, Erik; Hansen, Ole

    1980-01-01

    A new bandgap current reference is described which can be used to control the injector current of I/SUP 2/L circuits for supply voltages down to about 1 V. For small currents the total injector current is obtained as a mirror of the reference current. For large injector currents the current control......, but well controlled temperature coefficient is desired. It is shown how a temperature stable ring oscillator with I/SUP 2/L gates can be constructed by tailoring the temperature dependence of the supply current appropriately....

  2. Classification of methods for measuring current-voltage characteristics of semiconductor devices

    Directory of Open Access Journals (Sweden)

    Iermolenko Ia. O.

    2014-06-01

    Full Text Available It is shown that computer systems for measuring current-voltage characteristics are very important for semiconductor devices production. The main criteria of efficiency of such systems are defined. It is shown that efficiency of such systems significantly depends on the methods for measuring current-voltage characteristics of semiconductor devices. The aim of this work is to analyze existing methods for measuring current-voltage characteristics of semiconductor devices and to create the classification of these methods in order to specify the most effective solutions in terms of defined criteria. To achieve this aim, the most common classifications of methods for measuring current-voltage characteristics of semiconductor devices and their main disadvantages are considered. Automated and manual, continuous, pulse, mixed, isothermal and isodynamic methods for measuring current-voltage characteristics are analyzed. As a result of the analysis and generalization of existing methods the next classification criteria are defined: the level of automation, the form of measurement signals, the condition of semiconductor device during the measurements, and the use of mathematical processing of the measurement results. With the use of these criteria the classification scheme of methods for measuring current-voltage characteristics of semiconductor devices is composed and the most effective methods are specified.

  3. An investigation of characteristics parameters of Ag/p-Si Schottky diodes based on I-V-T and C-V-T measurements

    International Nuclear Information System (INIS)

    Selcuk, A.B.

    2004-01-01

    The current-voltage (I-V) measurements on Ag/p-Si Schottky barrier diodes in the temperature range 125-300 K were carried out. The experimental values of n and Φ b 0 were determined from intercepts and slopes of the forward bias In I-V plot at each temperature. The Φ b 0 and n determined from semilog-forwaid I- V plots were found to be a strong function of temperature. The ideality factor n was found to increase, while the Φ b 0 decrease with decreasing temperature. The flat-band barrier height Φ b f and series resistance R s are also determined from the I-V measurements. Furthermore, the diffusion potential V D , experimental carrier doping density N A , Fermi level E F and barrier height Φ C V are determined from the C- V measurements. It is shown that the values of R s estimated from Cheung's method were strongly temperature dependent decreased with increasing temperature

  4. Dark Current And Voltage Measurements Of Metal-Organic-Semiconductor (M-Or-S) Diode

    International Nuclear Information System (INIS)

    Adianto

    1996-01-01

    . Some Metal-Organic-Semiconductor (M-Or-S) thin film diodes, constructed with an organic polymer (polymerized toluene) as an active component has been successfully fabricated. The thin film M-Or-S diodes were fabricated on an n-type silicon with resistivity of 250-500 Ocm and p type silicon with resistivity of 10-20 Ocm as a substrate with polymerized toluene used as insulator. When deposited on silicon wafers with electrode of evaporated Ni on the n-type silicon and evaporated Au as the electrode on the polymerized toluene film, the electronic devices of Metal-Organic- Semiconductor (M-Or-S) type can be produced with one of its characteristics is that their light sensitivity. A plasma ion deposition system was constructed and used to deposit organic monomeric substance (toluene) that functioned as an isolator between semiconductor and the evaporated metal electrodes. The current-voltage measurements for different configurations of M-Or-S devices were carried out to determine the current-voltage (1-V) characteristics for M-Or-S devices with different materials and thicknesses. In addition to the 1-V measurement mentioned before, 1-V measurements of the devices were also carried out by using a curve tracer oscilloscope, and the picture of the effective parameters of each of the device could be taken by using a polaroid camera. Since the devices are very sensitive to light, the devices were all tested in a black-box which was covered by a black cloth to make sure that there was no light coming through. The experimental results for p- and n-type silicon substrates showed that an M-Or-S diode with n-type gave a higher breakdown voltage than that p- type silicon. In addition, the reverse bias breakdown voltage increased as the thickness of the thin film increased in the range of 50 -2500 V/μm

  5. Current-voltage characteristics of porous-silicon structures

    International Nuclear Information System (INIS)

    Diligenti, A.; Nannini, A.; Pennelli, G.; Pieri, F.; Fuso, F.; Allegrini, M.

    1996-01-01

    I-V DC characteristics have been measured on metal/porous-silicon structures. In particular, the measurements on metal/free-standing porous-silicon film/metal devices confirmed the result, already obtained, that the metal/porous-silicon interface plays a crucial role in the transport of any device. Four-contacts measurements on free-standing layers showed that the current linearly depends on the voltage and that the conduction process is thermally activated, the activation energy depending on the porous silicon film production parameters. Finally, annealing experiments performed in order to improve the conduction of rectifying contacts, are described

  6. Tunneling effects in the current-voltage characteristics of high-efficiency GaAs solar cells

    Science.gov (United States)

    Kachare, R.; Anspaugh, B. E.; Garlick, G. F. J.

    1988-01-01

    Evidence is that tunneling via states in the forbidden gap is the dominant source of excess current in the dark current-voltage (I-V) characteristics of high-efficiency DMCVD grown Al(x)Ga(1-x)As/GaAs(x is equal to or greater than 0.85) solar cells. The dark forward and reverse I-V measurements were made on several solar cells, for the first time, at temperatures between 193 and 301 K. Low-voltage reverse-bias I-V data of a number of cells give a thermal activation energy for excess current of 0.026 + or - 0.005 eV, which corresponds to the carbon impurity in GaAs. However, other energy levels between 0.02 eV and 0.04 eV were observed in some cells which may correspond to impurity levels introduced by Cu, Si, Ge, or Cd. The forward-bias excess current is mainly due to carrier tunneling between localized levels created in the space-charge layer by impurities such as carbon, which are incorporated during the solar cell growth process. A model is suggested to explain the results.

  7. Measurement system of high voltage and high current measurements at INMETRO - Brazilian Institute for Metrology, Standardization and Industrial Quality; Sistema de medicao de alta tensao e alta corrente do INMETRO - Brasil

    Energy Technology Data Exchange (ETDEWEB)

    Vitorio, Patricia Cals de O.; Franca, Ademir Martins de; Soares, Marco Aurelio; Pereira, Luiz Napoleao; Costa, Danielli Guimaraes; Moreira, Giselle Cobica; Nascimento, Paulo Roberto Mesquita [Instituto Nacional de Metrologia, Normalizacao e Qualidade Industrial (DIMCI/INMETRO), Duque de Caxias, RJ (Brazil). Diretoria de Metrologia Cientifica e Industrial], E-mail: latra@inmetro.gov.br

    2009-07-01

    This work presents the basic characteristics and uncertainties of the calibration equipment in high voltage and high current available at the INMETRO: system of measurement in alternating high voltage up to 200 kV, system of measurement in alternating current up to 2 k A, and system of measurement in continuous high voltage up to 150 kV.

  8. Computer code determination of tolerable accel current and voltage limits during startup of an 80 kV MFTF sustaining neutral beam source

    International Nuclear Information System (INIS)

    Mayhall, D.J.; Eckard, R.D.

    1979-01-01

    We have used a Lawrence Livermore Laboratory (LLL) version of the WOLF ion source extractor design computer code to determine tolerable accel current and voltage limits during startup of a prototype 80 kV Mirror Fusion Test Facility (MFTF) sustaining neutral beam source. Arc current limits are also estimated. The source extractor has gaps of 0.236, 0.721, and 0.155 cm. The effective ion mass is 2.77 AMU. The measured optimum accel current density is 0.266 A/cm 2 . The gradient grid electrode runs at 5/6 V/sub a/ (accel voltage). The suppressor electrode voltage is zero for V/sub a/ < 3 kV and -3 kV for V/sub a/ greater than or equal to 3 kV. The accel current density for optimum beam divergence is obtained for 1 less than or equal to V/sub a/ less than or equal to 80 kV, as are the beam divergence and emittance

  9. Current-voltage characteristics of dendrimer light-emitting diodes

    International Nuclear Information System (INIS)

    Stevenson, S G; Samuel, I D W; Staton, S V; Knights, K A; Burn, P L; Williams, J H T; Walker, Alison B

    2010-01-01

    We have investigated current-voltage (I-V) characteristics of unipolar and bipolar organic diodes that use phosphorescent dendrimers as the emissive organic layer. Through simulation of the measured I-V characteristics we were able to determine the device parameters for each device structure studied, leading to a better understanding of injection and transport behaviour in these devices. It was found that the common practice of assuming injection barriers are equal to the difference between bare electrode work functions and molecular orbital levels is unsuitable for the devices considered here, particularly for gold contacts. The studies confirm that different aromatic units in the dendrons can give significant differences in the charge transporting properties of the dendrimers.

  10. Current-voltage characteristics of dendrimer light-emitting diodes

    Science.gov (United States)

    Stevenson, S. G.; Samuel, I. D. W.; Staton, S. V.; Knights, K. A.; Burn, P. L.; Williams, J. H. T.; Walker, Alison B.

    2010-09-01

    We have investigated current-voltage (I-V) characteristics of unipolar and bipolar organic diodes that use phosphorescent dendrimers as the emissive organic layer. Through simulation of the measured I-V characteristics we were able to determine the device parameters for each device structure studied, leading to a better understanding of injection and transport behaviour in these devices. It was found that the common practice of assuming injection barriers are equal to the difference between bare electrode work functions and molecular orbital levels is unsuitable for the devices considered here, particularly for gold contacts. The studies confirm that different aromatic units in the dendrons can give significant differences in the charge transporting properties of the dendrimers.

  11. Current-voltage characteristics of dendrimer light-emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Stevenson, S G; Samuel, I D W [Organic Semiconductor Centre, SUPA, School of Physics and Astronomy, University of St Andrews, North Haugh, St Andrews, Fife, KY16 9SS (United Kingdom); Staton, S V; Knights, K A; Burn, P L [Department of Chemistry, Chemistry Research Laboratory, 12 Mansfield Road, Oxford, OX1 3TA (United Kingdom); Williams, J H T; Walker, Alison B, E-mail: a.b.walker@bath.ac.u [Department of Physics, University of Bath, Bath, BA2 7AY (United Kingdom)

    2010-09-29

    We have investigated current-voltage (I-V) characteristics of unipolar and bipolar organic diodes that use phosphorescent dendrimers as the emissive organic layer. Through simulation of the measured I-V characteristics we were able to determine the device parameters for each device structure studied, leading to a better understanding of injection and transport behaviour in these devices. It was found that the common practice of assuming injection barriers are equal to the difference between bare electrode work functions and molecular orbital levels is unsuitable for the devices considered here, particularly for gold contacts. The studies confirm that different aromatic units in the dendrons can give significant differences in the charge transporting properties of the dendrimers.

  12. Current-voltage-temperature characteristics of DNA origami

    Energy Technology Data Exchange (ETDEWEB)

    Bellido, Edson P; Bobadilla, Alfredo D; Rangel, Norma L; Seminario, Jorge M [Department of Chemical Engineering, Texas A and M University, College Station, TX 77843 (United States); Zhong Hong; Norton, Michael L [Department of Chemistry, Marshall University, Huntington, WV 25755 (United States); Sinitskii, Alexander [Department of Chemistry, Rice University, Houston, TX 77005 (United States)

    2009-04-29

    The temperature dependences of the current-voltage characteristics of a sample of triangular DNA origami deposited in a 100 nm gap between platinum electrodes are measured using a probe station. Below 240 K, the sample shows high impedance, similar to that of the substrate. Near room temperature the current shows exponential behavior with respect to the inverse of temperature. Sweep times of 1 s do not yield a steady state; however sweep times of 450 s for the bias voltage secure a steady state. The thermionic emission and hopping conduction models yield similar barriers of {approx}0.7 eV at low voltages. For high voltages, the hopping conduction mechanism yields a barrier of 0.9 eV and the thermionic emission yields 1.1 eV. The experimental data set suggests that the dominant conduction mechanism is hopping in the range 280-320 K. The results are consistent with theoretical and experimental estimates of the barrier for related molecules.

  13. Current-voltage-temperature characteristics of DNA origami

    International Nuclear Information System (INIS)

    Bellido, Edson P; Bobadilla, Alfredo D; Rangel, Norma L; Seminario, Jorge M; Zhong Hong; Norton, Michael L; Sinitskii, Alexander

    2009-01-01

    The temperature dependences of the current-voltage characteristics of a sample of triangular DNA origami deposited in a 100 nm gap between platinum electrodes are measured using a probe station. Below 240 K, the sample shows high impedance, similar to that of the substrate. Near room temperature the current shows exponential behavior with respect to the inverse of temperature. Sweep times of 1 s do not yield a steady state; however sweep times of 450 s for the bias voltage secure a steady state. The thermionic emission and hopping conduction models yield similar barriers of ∼0.7 eV at low voltages. For high voltages, the hopping conduction mechanism yields a barrier of 0.9 eV and the thermionic emission yields 1.1 eV. The experimental data set suggests that the dominant conduction mechanism is hopping in the range 280-320 K. The results are consistent with theoretical and experimental estimates of the barrier for related molecules.

  14. Voltage-probe-position dependence and magnetic-flux contribution to the measured voltage in ac transport measurements: which measuring circuit determines the real losses?

    International Nuclear Information System (INIS)

    Pe, T.; McDonald, J.; Clem, J.R.

    1995-01-01

    The voltage V ab measured between two voltage taps a and b during magnetic flux transport in a type-II superconductor carrying current I is the sum of two contributions, the line integral from a to b of the electric field along an arbitrary path C s through the superconductor and a term proportional to the time rate of change of magnetic flux through the area bounded by the path C s and the measuring circuit leads. When the current I(t) is oscillating with time t, the apparent ac loss (the time average of the product IV ab ) depends upon the measuring circuit used. Only when the measuring-circuit leads are brought out far from the surface does the apparent power dissipation approach the real (or true) ac loss associated with the length of sample probed. Calculations showing comparisons between the apparent and real ac losses in a flat strip of rectangular cross section will be presented, showing the behavior as a function of the measuring-circuit dimensions. Corresponding calculations also are presented for a sample of elliptical cross section

  15. Advanced In Situ I-V Measurements Used in the Study of Porous Structures Growth on Silicon

    Directory of Open Access Journals (Sweden)

    Amare Benor

    2017-01-01

    Full Text Available The rate of oxide formation during growth of pores structures on silicon was investigated by in situ I-V measurements. The measurements were designed to get two I-V curves in a short time (total time for the two measurements was 300 seconds taking into account the gap (in mA/cm2 for each corresponding voltage. The in situ I-V measurements were made at different pore depth/time, at the electrolyte-pore tip interface, while etching takes place based on p-type Si. The results showed increasing, decreasing, and constant I-V gap in time, for macropores, nanopores, and electropolishing regimes, respectively. This was related to the expected diffusion limitation of oxide forming (H2O molecules reaching the electrolyte-pore tip and the anodizing current, while etching takes place. The method can be developed further and has the potential to be applied in other electrochemically etched porous semiconductor materials.

  16. A current to voltage converter for cryogenics using a CMOS operational amplifier

    International Nuclear Information System (INIS)

    Hayashi, K; Saitoh, K; Shibayama, Y; Shirahama, K

    2009-01-01

    We have constructed a versatile current to voltage (I-V) converter operating at liquid helium temperature, using a commercially available all-CMOS OPamp. It is valuable for cryogenic measurements of electrical current of nano-pico amperes, for example, in scanning probe microscopy. The I-V converter is thermally linked to liquid helium bath and self-heated up to 10.7 K. We have confirmed its capability of a transimpedance gain of 10 6 V/A and a bandwidth from DC to 200 kHz. In order to test the practical use for a frequency-modulation atomic force microscope, we have measured the resonance frequency shift of a quartz tuning fork at 32 kHz. In the operation of the I-V converter close to the sensor at liquid helium temperature, the signal-to-noise ratio has been improved to a factor of 13.6 compared to the operation at room temperature.

  17. Experimental and theoretical studies of a high temperature cesium-barium tacitron, with application to low voltage-high current inversion

    International Nuclear Information System (INIS)

    Murray, C.S.; El-Genk, M.S.

    1994-02-01

    A low voltage/high current switch refer-red as ''Cs-Ba tacitron'' is studied for use as a dc to ac inverter in high temperature and/or ionizing radiation environments. The operational characteristics of the Cs-Ba tacitron as a switch were investigated experimentally in three modes: (a) breakdown mode, (b) I-V mode, and (c) current modulation mode. Operation parameters measured include switching frequencies up to 20 kHz, hold-off voltages up to 200 V, current densities in excess of 15 A/CM 2 , switch power density of 1 kW/cm 2 , and a switching efficiency in excess of 90 % at collector voltages greater than 30 V. Also, if the discharge current is circuit limited to a value below the maximum thermal emission current density, the voltage drop is constant and below 3 V

  18. Current-voltage characterization of individual as-grown nanowires using a scanning tunneling microscope.

    Science.gov (United States)

    Timm, Rainer; Persson, Olof; Engberg, David L J; Fian, Alexander; Webb, James L; Wallentin, Jesper; Jönsson, Andreas; Borgström, Magnus T; Samuelson, Lars; Mikkelsen, Anders

    2013-11-13

    Utilizing semiconductor nanowires for (opto)electronics requires exact knowledge of their current-voltage properties. We report accurate on-top imaging and I-V characterization of individual as-grown nanowires, using a subnanometer resolution scanning tunneling microscope with no need for additional microscopy tools, thus allowing versatile application. We form Ohmic contacts to InP and InAs nanowires without any sample processing, followed by quantitative measurements of diameter dependent I-V properties with a very small spread in measured values compared to standard techniques.

  19. Ca(2+) currents and voltage responses in Type I and Type II hair cells of the chick embryo semicircular canal.

    Science.gov (United States)

    Masetto, Sergio; Zampini, Valeria; Zucca, Giampiero; Valli, Paolo

    2005-11-01

    Type I and Type II hair cells, and Type II hair cells located in different zones of the semicircular canal crista, express different patterns of voltage-dependent K channels, each one specifically shaping the hair cell receptor potential. We report here that, close to hatching, chicken embryo semicircular canal Type I and Type II hair cells express a similar voltage-dependent L-type calcium current (I(Ca)), whose main features are: activation above -60 mV, fast activation kinetics, and scarce inactivation. I(Ca) should be already active at rest in Zone 1 Type II hair cells, whose resting membrane potential was on average slightly less negative than -60 mV. Conversely, I(Ca) would not be active at rest in Type II hair cells from Zone 2 and 3, nor in Type I hair cells, since their resting membrane potential was significantly more negative than -60 mV. However, even small depolarising currents would activate I(Ca) steadily in Zone 2 and 3 Type II hair cells, but not in Type I hair cells because of the robust repolarising action of their specific array of K(+) currents. The implications of the present findings in the afferent discharge are discussed.

  20. Monitoring and Fault Detection in Photovoltaic Systems Based On Inverter Measured String I-V Curves

    DEFF Research Database (Denmark)

    Spataru, Sergiu; Sera, Dezso; Kerekes, Tamas

    2015-01-01

    Most photovoltaic (PV) string inverters have the hardware capability to measure at least part of the current-voltage (I-V) characteristic curve of the PV strings connected at the input. However, this intrinsic capability of the inverters is not used, since I-V curve measurement and monitoring...... functions are not implemented in the inverter control software. In this paper, we aim to show how such a functionality can be useful for PV system monitoring purposes, to detect the presence and cause of power-loss in the PV strings, be it due to shading, degradation of the PV modules or balance......-of-system components through increased series resistance losses, or shunting of the PV modules. To achieve this, we propose and experimentally demonstrate three complementary PV system monitoring methods that make use of the I-V curve measurement capability of a commercial string inverter. The first method is suitable...

  1. Current-voltage characteristics of carbon nanotubes with substitutional nitrogen

    DEFF Research Database (Denmark)

    Kaun, C.C.; Larade, B.; Mehrez, H.

    2002-01-01

    unit cell generates a metallic transport behavior. Nonlinear I-V characteristics set in at high bias and a negative differential resistance region is observed for the doped tubes. These behaviors can be well understood from the alignment/mis-alignment of the current carrying bands in the nanotube leads......We report ab initio analysis of current-voltage (I-V) characteristics of carbon nanotubes with nitrogen substitution doping. For zigzag semiconducting tubes, doping with a single N impurity increases current flow and, for small radii tubes, narrows the current gap. Doping a N impurity per nanotube...

  2. A current to voltage converter for cryogenics using a CMOS operational amplifier

    Energy Technology Data Exchange (ETDEWEB)

    Hayashi, K; Saitoh, K; Shibayama, Y; Shirahama, K [Department of Physics, Keio University, Yokohama 223-8522 (Japan)], E-mail: khayashi@a2.keio.jp

    2009-02-01

    We have constructed a versatile current to voltage (I-V) converter operating at liquid helium temperature, using a commercially available all-CMOS OPamp. It is valuable for cryogenic measurements of electrical current of nano-pico amperes, for example, in scanning probe microscopy. The I-V converter is thermally linked to liquid helium bath and self-heated up to 10.7 K. We have confirmed its capability of a transimpedance gain of 10{sup 6} V/A and a bandwidth from DC to 200 kHz. In order to test the practical use for a frequency-modulation atomic force microscope, we have measured the resonance frequency shift of a quartz tuning fork at 32 kHz. In the operation of the I-V converter close to the sensor at liquid helium temperature, the signal-to-noise ratio has been improved to a factor of 13.6 compared to the operation at room temperature.

  3. Influence of phantom and tube voltage in fluoroscopy on image intensifier (I.I.) incident dose rate

    International Nuclear Information System (INIS)

    Seguchi, Shigenobu; Ishikawa, Yoshinobu; Kuwahara, Kazuyoshi; Morita, Miki; Mizuno, Shouta; Nakamura, Akio

    1999-01-01

    We examined the influence of phantoms and tube voltage in fluoroscopy on the image intensifier (I.I.) conversion factor. We used 20-cm-thick acrylic resin, 20 mm aluminum, and 1.5 mm copper, which are generally used as phantoms in the measurement of I.I. incident dose rate. We measured I.I. incident dose rate and conversion factor under conditions in which the range of tube voltage was from 60 kV to 120 kV. The result showed that the conversion factor is influenced by the type of phantom, with copper showing the highest value, aluminum second, and acrylic the smallest under the same condition of aluminum at half value layer. It was determined that conversion factor depends on tube voltage and has peaks from 80-100 kV. The location and height of the peak are influenced by the type of phantom. Therefore, I.I. incident dose rate is influenced by both the type of phantom and tube voltage under automatic brightness control fluoroscopy. Unification of phantoms and tube voltage is necessary for long-term evaluation of I.I. incident dose rate. (author)

  4. Random instabilities of current-voltage curves of BSCCO-2223/Ag multifilamentary tapes in LN2 at 77 K

    CERN Document Server

    Usak, P

    2003-01-01

    The measurement of the current-voltage (I-V) characteristics of BSCCO-2223/Ag multifilamentary tapes in a silver matrix has been performed on short samples (of several centimetres) as well as on long tape (1 m), wound in the form of a helical one-layer coil. Measurements at 77 K and in zero external magnetic field have revealed good reproducibility of the I-V hysteresis in most runs. Nevertheless, strange irregularities have sometimes been observed in the I-V curve behaviour during current ramping up and down. Quasi-reproducible drops from the ascending hysteretic branch in the direction of the descending one have been measured at higher voltage levels (approx 1 mV cm sup - sup 1) on the curve measured on the helical coil. These have recently been explained by a sudden change in the heat transfer coefficient [1]. Rarely and non-reproducibly we have also observed these drops on short samples at E approx 1 x 10 sup - sup 2 V m sup - sup 1 , (and even under 1 x 10 sup - sup 3 V m sup - sup 1). The accidental dro...

  5. Effects of synchronous irradiance monitoring and correction of current-voltage curves on the outdoor performance measurements of photovoltaic modules

    Science.gov (United States)

    Hishikawa, Yoshihiro; Doi, Takuya; Higa, Michiya; Ohshima, Hironori; Takenouchi, Takakazu; Yamagoe, Kengo

    2017-08-01

    Precise outdoor measurement of the current-voltage (I-V) curves of photovoltaic (PV) modules is desired for many applications such as low-cost onsite performance measurement, monitoring, and diagnosis. Conventional outdoor measurement technologies have a problem in that their precision is low when the solar irradiance is unstable, hence, limiting the opportunity of precise measurement only on clear sunny days. The purpose of this study is to investigate an outdoor measurement procedure, that can improve both the measurement opportunity and precision. Fast I-V curve measurements within 0.2 s and synchronous measurement of irradiance using a PV module irradiance sensor very effectively improved the precision. A small standard deviation (σ) of the module’s maximum output power (P max) in the range of 0.7-0.9% is demonstrated, based on the basis of a 6 month experiment, that mainly includes partly sunny days and cloudy days, during which the solar irradiance is unstable. The σ was further improved to 0.3-0.5% by correcting the curves for the small variation of irradiance. This indicates that the procedure of this study enables much more reproducible I-V curve measurements than a conventional usual procedure under various climatic conditions. Factors that affect measurement results are discussed, to further improve the precision.

  6. V-I curves and plasma parameters in a high density DC glow discharge generated by a current-source

    International Nuclear Information System (INIS)

    Granda-Gutierrez, E E; Lopez-Callejas, R; Piedad-Beneitez, A de la; BenItez-Read, J S; Pacheco-Sotelo, J O; Pena-Eguiluz, R; A, R Valencia; Mercado-Cabrera, A; Barocio, S R

    2008-01-01

    Nitrogen DC glow discharges, conducted in a cylindrical geometry, have been characterized using a new current-source able to provide 10 -3 - 3 A for the sustainment of the discharge, instead of a conventional voltage-source. The V-I characteristic curves obtained from these discharges were found to fit the general form i(v) = A(p)v k(p) , whereby the plasma itself can be modeled as a voltage-controlled current-source. We conclude that the fitting parameters A and k, which mainly depend on the gas pressure p, are strongly related to the plasma characteristics, so much so that they can indicate the pressure interval in which the maximum plasma density is located, with values in the order of 10 16 m -3 at reduced discharge potential (300-600 V) and low working pressure (10 -1 - 10 1 Pa)

  7. Hysteretic current-voltage characteristics in RF-sputtered nanocrystalline TiO2 thin films

    International Nuclear Information System (INIS)

    Villafuerte, Manuel; Juarez, Gabriel; Heluani, Silvia P. de; Comedi, David

    2007-01-01

    We have measured the current-voltage characteristics at room temperature of a nanocrystalline TiO 2 thin film fabricated by reactive RF-sputtering deposition and sandwiched between ITO (indium-tin-oxide)-buffered glass substrate and an indium top electrode. The I-V characteristics are ohmic for low voltages and become non-linear, hysteretic and asymmetric as the voltage is increased. The system is shown to be well represented by two distinct resistance states in the non-ohmic region. Current transient evolutions were also measured for constant voltage excitations. The resistance is stable in time for voltages in the ohmic regime. In contrast, for voltages in the non-ohmic regime, the resistance has a small variation for a short period of time (order of tens seconds) and then increases with time. For those transients, long characteristic times (on the order of tens of minutes up to hours) were found. The behavior of the system is discussed on the basis of experimental results reported in the literature for similar systems and existing models for electric-field induced resistive switching

  8. Insulation Resistance and Leakage Currents in Low-Voltage Ceramic Capacitors with Cracks

    Science.gov (United States)

    Teverovsky, Alexander A.

    2016-01-01

    Measurement of insulation resistance (IR) in multilayer ceramic capacitors (MLCCs) is considered a screening technique that ensures the dielectric is defect-free. This work analyzes the effectiveness of this technique for revealing cracks in ceramic capacitors. It is shown that absorption currents prevail over the intrinsic leakage currents during standard IR measurements at room temperature. Absorption currents, and consequently IR, have a weak temperature dependence, increase linearly with voltage (before saturation), and are not sensitive to the presence of mechanical defects. In contrary, intrinsic leakage currents increase super-linearly with voltage and exponentially with temperature (activation energy is in the range from 0.6 eV to 1.1 eV). Leakage currents associated with the presence of cracks have a weaker dependence on temperature and voltage compared to the intrinsic leakage currents. For this reason, intrinsic leakage currents prevail at high temperatures and voltages, thus masking the presence of defects.

  9. Design of the corona current measurement sensor with wide bandwidth under dc ultra-high-voltage environment

    International Nuclear Information System (INIS)

    Liu, Yingyi; Yuan, Haiwen; Yang, Qinghua; Cui, Yong

    2011-01-01

    The research in the field of corona discharge, which is one of the key technologies, can help us to realize ultra-high-voltage (UHV) power transmission. This paper proposes a new sampling resistance sensor to measure the dc UHV corona current in a wide band. By designing the structural and distributed parameters of the sensor, the UHV dielectric breakdown performance and the wide-band measuring characteristics of the sensor are satisfied. A high-voltage discharge test shows that the designed sensor can work under a 1200 kV dc environment without the occurrence of corona discharge. A frequency characteristic test shows that the measuring bandwidth of the sensor can be improved from the current 4.5 to 20 MHz. The test results in an actual dc UHV transmission line demonstrate that the sensor can accurately measure the corona current under the dc UHV environment

  10. Effect of current compliance and voltage sweep rate on the resistive switching of HfO2/ITO/Invar structure as measured by conductive atomic force microscopy

    International Nuclear Information System (INIS)

    Wu, You-Lin; Liao, Chun-Wei; Ling, Jing-Jenn

    2014-01-01

    The electrical characterization of HfO 2 /ITO/Invar resistive switching memory structure was studied using conductive atomic force microscopy (AFM) with a semiconductor parameter analyzer, Agilent 4156C. The metal alloy Invar was used as the metal substrate to ensure good ohmic contact with the substrate holder of the AFM. A conductive Pt/Ir AFM tip was placed in direct contact with the HfO 2 surface, such that it acted as the top electrode. Nanoscale current-voltage (I-V) characteristics of the HfO 2 /ITO/Invar structure were measured by applying a ramp voltage through the conductive AFM tip at various current compliances and ramp voltage sweep rates. It was found that the resistance of the low resistance state (RLRS) decreased with increasing current compliance value, but resistance of high resistance state (RHRS) barely changed. However, both the RHRS and RLRS decreased as the voltage sweep rate increased. The reasons for this dependency on current compliance and voltage sweep rate are discussed.

  11. Four-point probe measurements using current probes with voltage feedback to measure electric potentials

    Science.gov (United States)

    Lüpke, Felix; Cuma, David; Korte, Stefan; Cherepanov, Vasily; Voigtländer, Bert

    2018-02-01

    We present a four-point probe resistance measurement technique which uses four equivalent current measuring units, resulting in minimal hardware requirements and corresponding sources of noise. Local sample potentials are measured by a software feedback loop which adjusts the corresponding tip voltage such that no current flows to the sample. The resulting tip voltage is then equivalent to the sample potential at the tip position. We implement this measurement method into a multi-tip scanning tunneling microscope setup such that potentials can also be measured in tunneling contact, allowing in principle truly non-invasive four-probe measurements. The resulting measurement capabilities are demonstrated for \

  12. An analytic current-voltage model for quasi-ballistic III-nitride high electron mobility transistors

    Science.gov (United States)

    Li, Kexin; Rakheja, Shaloo

    2018-05-01

    We present an analytic model to describe the DC current-voltage (I-V) relationship in scaled III-nitride high electron mobility transistors (HEMTs) in which transport within the channel is quasi-ballistic in nature. Following Landauer's transport theory and charge calculation based on two-dimensional electrostatics that incorporates negative momenta states from the drain terminal, an analytic expression for current as a function of terminal voltages is developed. The model interprets the non-linearity of access regions in non-self-aligned HEMTs. Effects of Joule heating with temperature-dependent thermal conductivity are incorporated in the model in a self-consistent manner. With a total of 26 input parameters, the analytic model offers reduced empiricism compared to existing GaN HEMT models. To verify the model, experimental I-V data of InAlN/GaN with InGaN back-barrier HEMTs with channel lengths of 42 and 105 nm are considered. Additionally, the model is validated against numerical I-V data obtained from DC hydrodynamic simulations of an unintentionally doped AlGaN-on-GaN HEMT with 50-nm gate length. The model is also verified against pulsed I-V measurements of a 150-nm T-gate GaN HEMT. Excellent agreement between the model and experimental and numerical results for output current, transconductance, and output conductance is demonstrated over a broad range of bias and temperature conditions.

  13. Nonlinear current-voltage behavior in PZT thin films

    Energy Technology Data Exchange (ETDEWEB)

    Xiao, Mi; Zhang, Weikang; Zhang, Zebin; Li, Shida; Zhang, Ping; Lan, Kuibo [Tianjin University, School of Electrical and Information Engineering, Tianjin (China)

    2017-05-15

    In this paper, Pb(Zr{sub 0.52}Ti{sub 0.48})O{sub 3} (PZT) thin films were prepared by sol-gel synthesis and characterized by X-ray diffraction, field emission scanning electron microscopy and current-voltage measurements. Here, we demonstrate that in addition to the outstanding ferroelectric and dielectric properties, the PZT films also have remarkably nonlinear current-voltage characteristics. Considering the contact of semi-conductive grains in the PZT films, a double Schottky barrier (DSB) model may be responsible for such phenomena. The test results show that with the decrease of annealing temperature and the increase of the film thickness, the threshold voltages (V{sub th}) increase obviously. The maximum V{sub th} value of 60.95 V and the minimum value of 6.9 V in our experiments were obtained from the five-layered samples annealed at 600 C and the two-layered samples annealed at 700 C, respectively. As a result, PZT thin film may lead to efficient switching and sensing devices. (orig.)

  14. Current-voltage curves of atomic-sized transition metal contacts: An explanation of why Au is ohmic and Pt is not

    DEFF Research Database (Denmark)

    Nielsen, S.K.; Brandbyge, Mads; Hansen, K.

    2002-01-01

    We present an experimental study of current-voltage (I-V) curves on atomic-sized Au and Pt contacts formed under cryogenic vacuum (4.2 K). Whereas I-V curves for Au are almost Ohmic, the conductance G=I/V for Pt decreases with increasing voltage, resulting in distinct nonlinear I-V behavior...

  15. High Current, Low Voltage Power Converter [20kA, 6V] LHC Converter Prototype

    CERN Document Server

    Jørgensen, H E; Dupaquier, A; Fernqvist, G

    1998-01-01

    The superconducting LHC accelerator requires high currents (~12.5kA) and relatively low voltages (~10 V) for its magnets. The need to install the power converters underground is the driving force for reduced volume and high efficiency. Moreover, the LHC machine will require a very high level of performance from the power converters, particularly in terms of DC stability, dynamic response and also in matters of EMC. To meet these requirements soft-switching techniques will be used. This paper describes the development of a [20kA,6V] power converter intended as a stable high-current source for D CCT calibration and an evaluation prototype for the future LHC converters. The converter is made with a modular concept with five current sources [4kA,6V] in parallel. The 4kA sources are built as plu g-in modules: a diode rectifier on the AC mains with a damped L-C passive filter, a Zero Voltage Switching inverter working at 20 kHz and an output stage (high frequency transformers, Schottky rectifi ers and output filter...

  16. Current integrator using the voltage to frequency converter

    International Nuclear Information System (INIS)

    Ukai, K.; Gomi, K.

    1975-01-01

    A current integrator using the Voltage to Frequency Converter has been constructed to measure the beam intensity of the 1.3 GeV Electron Synchrotron at the INS. This integrator ranges the current 10 -7 to 10 -11 amperes and has been calibrated by the extracted electron beam and constant current sources. The accuracy of this integrator agrees with the previous integrator within 1%. (auth.)

  17. Current-Voltage Characteristic of Nanosecond - Duration Relativistic Electron Beam

    Science.gov (United States)

    Andreev, Andrey

    2005-10-01

    The pulsed electron-beam accelerator SINUS-6 was used to measure current-voltage characteristic of nanosecond-duration thin annular relativistic electron beam accelerated in vacuum along axis of a smooth uniform metal tube immersed into strong axial magnetic field. Results of these measurements as well as results of computer simulations performed using 3D MAGIC code show that the electron-beam current dependence on the accelerating voltage at the front of the nanosecond-duration pulse is different from the analogical dependence at the flat part of the pulse. In the steady-state (flat) part of the pulse), the measured electron-beam current is close to Fedosov current [1], which is governed by the conservation law of an electron moment flow for any constant voltage. In the non steady-state part (front) of the pulse, the electron-beam current is higher that the appropriate, for a giving voltage, steady-state (Fedosov) current. [1] A. I. Fedosov, E. A. Litvinov, S. Ya. Belomytsev, and S. P. Bugaev, ``Characteristics of electron beam formed in diodes with magnetic insulation,'' Soviet Physics Journal (A translation of Izvestiya VUZ. Fizika), vol. 20, no. 10, October 1977 (April 20, 1978), pp.1367-1368.

  18. Fault identification in crystalline silicon PV modules by complementary analysis of the light and dark current-voltage characteristics

    DEFF Research Database (Denmark)

    Spataru, Sergiu; Sera, Dezso; Hacke, Peter

    2014-01-01

    Photovoltaic system (PV) maintenance and diagnostic tools are often based on performance models of the system, complemented with light current-voltage (I-V) measurements, visual inspection and/or thermal imaging. Although these are invaluable tools in diagnosing PV system performance losses and f...

  19. Current-voltage hysteresis and dielectric properties of PVA coated MWCNT film

    Science.gov (United States)

    Das, Amit Kumar; Meikap, Ajit Kumar

    2017-12-01

    In this work, we have prepared polyvinyl alcohol (PVA) coated multiwall carbon nanotube (MWCNT) film by an in situ chemical oxidative preparation technique. The thermogravimetric analysis clearly explains the thermal degradation of pure polymer and polymer nanocomposite film. We have studied the AC electrical transport properties and current-voltage (I-V) characteristic of PVA-MWCNT composites within the temperature range 300 ≤ T ≤ 423 K and frequency range 150 Hz ≤ f ≤ 2 MHz. It is observed that the dielectric constant of the composite film increases significantly. The frequency variation of AC conductivity follows the power law ( ωS ) and a sharp transition from small polaron tunneling to correlated barrier hopping model is found. The imaginary part of electric modulus shows non-Debye type asymmetric behaviour. The impedance spectroscopy shows the negative temperature coefficient of resistance of the composite film. Nyquist plot of the composite film at different temperatures is established from impedance measurement. The current-voltage characteristic (under ± 20 V) shows hysteresis behaviour and field dependent resistance. We simulate the experimentally observed current density-electric field data with the established theory.

  20. Current-voltage hysteresis and dielectric properties of PVA coated MWCNT film

    Science.gov (United States)

    Das, Amit Kumar; Meikap, Ajit Kumar

    2018-06-01

    In this work, we have prepared polyvinyl alcohol (PVA) coated multiwall carbon nanotube (MWCNT) film by an in situ chemical oxidative preparation technique. The thermogravimetric analysis clearly explains the thermal degradation of pure polymer and polymer nanocomposite film. We have studied the AC electrical transport properties and current-voltage (I-V) characteristic of PVA-MWCNT composites within the temperature range 300 ≤ T ≤ 423 K and frequency range 150 Hz ≤ f ≤ 2 MHz. It is observed that the dielectric constant of the composite film increases significantly. The frequency variation of AC conductivity follows the power law ( ωS ) and a sharp transition from small polaron tunneling to correlated barrier hopping model is found. The imaginary part of electric modulus shows non-Debye type asymmetric behaviour. The impedance spectroscopy shows the negative temperature coefficient of resistance of the composite film. Nyquist plot of the composite film at different temperatures is established from impedance measurement. The current-voltage characteristic (under ± 20 V) shows hysteresis behaviour and field dependent resistance. We simulate the experimentally observed current density-electric field data with the established theory.

  1. Non-contact current and voltage sensor

    Science.gov (United States)

    Carpenter, Gary D; El-Essawy, Wael; Ferreira, Alexandre Peixoto; Keller, Thomas Walter; Rubio, Juan C; Schappert, Michael A

    2014-03-25

    A detachable current and voltage sensor provides an isolated and convenient device to measure current passing through a conductor such as an AC branch circuit wire, as well as providing an indication of an electrostatic potential on the wire, which can be used to indicate the phase of the voltage on the wire, and optionally a magnitude of the voltage. The device includes a housing that contains the current and voltage sensors, which may be a ferrite cylinder with a hall effect sensor disposed in a gap along the circumference to measure current, or alternative a winding provided through the cylinder along its axis and a capacitive plate or wire disposed adjacent to, or within, the ferrite cylinder to provide the indication of the voltage.

  2. Accurate surface potential determination in Schottky diodes by the use of a correlated current and capacitance voltage measurements. Application to n-InP

    International Nuclear Information System (INIS)

    Ahaitouf, Ali; Ahaitouf, Abdelaziz; Salvestrini, Jean Paul; Srour, Hussein

    2011-01-01

    Based on current voltage (I—V g ) and capacitance voltage (C—V g ) measurements, a reliable procedure is proposed to determine the effective surface potential V d (V g ) in Schottky diodes. In the framework of thermionic emission, our analysis includes both the effect of the series resistance and the ideality factor, even voltage dependent. This technique is applied to n-type indium phosphide (n-InP) Schottky diodes with and without an interfacial layer and allows us to provide an interpretation of the observed peak on the C—V g measurements. The study clearly shows that the depletion width and the flat band barrier height deduced from C—V g , which are important parameters directly related to the surface potential in the semiconductor, should be estimated within our approach to obtain more reliable information. (semiconductor devices)

  3. Electronic Current Transducer (ECT) for high voltage dc lines

    Science.gov (United States)

    Houston, J. M.; Peters, P. H., Jr.; Summerayes, H. R., Jr.; Carlson, G. J.; Itani, A. M.

    1980-02-01

    The development of a bipolar electronic current transducer (ECT) for measuring the current in a high voltage dc (HVDC) power line at line potential is discussed. The design and construction of a free standing ECT for use on a 400 kV line having a nominal line current of 2000 A is described. Line current is measured by a 0.0001 ohm shunt whose voltage output is sampled by a 14 bit digital data link. The high voltage interface between line and ground is traversed by optical fibers which carry digital light signals as far as 300 m to a control room where the digital signal is converted back to an analog representation of the shunt voltage. Two redundant electronic and optical data links are used in the prototype. Power to operate digital and optical electronics and temperature controlling heaters at the line is supplied by a resistively and capacitively graded 10 stage cascade of ferrite core transformers located inside the hollow, SF6 filled, porcelain support insulator. The cascade is driven by a silicon controlled rectifier inverter which supplies about 100 W of power at 30 kHz.

  4. KCNE5 induces time- and voltage-dependent modulation of the KCNQ1 current

    DEFF Research Database (Denmark)

    Angelo, Kamilla; Jespersen, Thomas; Grunnet, Morten

    2002-01-01

    The function of the KCNE5 (KCNE1-like) protein has not previously been described. Here we show that KCNE5 induces both a time- and voltage-dependent modulation of the KCNQ1 current. Interaction of the KCNQ1 channel with KCNE5 shifted the voltage activation curve of KCNQ1 by more than 140 mV in th...... the I(Ks) current in certain parts of the mammalian heart....

  5. Current-Voltage Characteristics of Nb2O5 nanoporous via light illumination

    Science.gov (United States)

    Samihah Khairir, Nur; Rani, Rozina Abdul; Fazlida Hanim Abdullah, Wan; Hafiz Mamat, Mohamad; Kadir, Rosmalini Abdul; Rusop, M.; Sabirin Zoolfakar, Ahmad

    2018-03-01

    This work discussed the effect of light on I-V characteristics of anodized niobium pentoxide (Nb2O5) which formed nanoporous structure film. The structure was synthesized by anodizing niobium foils in glycerol based solution with 10 wt% supplied by two different voltages, 5V and 10V. The anodized foils that contained Nb2O5 film were then annealed to obtain an orthorhombic phase for 30 minutes at 450°C. The metal contact used for I-V testing was platinum (Pt) and it was deposited using thermal evaporator at 30nm thickness. I-V tests were conducted under different condition; dark and illumination to study the effect of light on I-V characteristics of anodized nanoporous Nb2O5. Higher anodization voltage and longer anodization time resulted in higher pore dispersion and larger pore size causing the current to increase. The increase of conductivity in I-V behaviour of Nb2O5 device is also affected by the illumination test as higher light intensity caused space charge region width to increase, thus making it easier for electron transfer between energy band gap.

  6. Measurement and statistical analysis of single-molecule current-voltage characteristics, transition voltage spectroscopy, and tunneling barrier height.

    Science.gov (United States)

    Guo, Shaoyin; Hihath, Joshua; Díez-Pérez, Ismael; Tao, Nongjian

    2011-11-30

    We report on the measurement and statistical study of thousands of current-voltage characteristics and transition voltage spectra (TVS) of single-molecule junctions with different contact geometries that are rapidly acquired using a new break junction method at room temperature. This capability allows one to obtain current-voltage, conductance voltage, and transition voltage histograms, thus adding a new dimension to the previous conductance histogram analysis at a fixed low-bias voltage for single molecules. This method confirms the low-bias conductance values of alkanedithiols and biphenyldithiol reported in literature. However, at high biases the current shows large nonlinearity and asymmetry, and TVS allows for the determination of a critically important parameter, the tunneling barrier height or energy level alignment between the molecule and the electrodes of single-molecule junctions. The energy level alignment is found to depend on the molecule and also on the contact geometry, revealing the role of contact geometry in both the contact resistance and energy level alignment of a molecular junction. Detailed statistical analysis further reveals that, despite the dependence of the energy level alignment on contact geometry, the variation in single-molecule conductance is primarily due to contact resistance rather than variations in the energy level alignment.

  7. CaV 3.1 and CaV 3.3 account for T-type Ca2+ current in GH3 cells

    Directory of Open Access Journals (Sweden)

    M.A. Mudado

    2004-06-01

    Full Text Available T-type Ca2+ channels are important for cell signaling by a variety of cells. We report here the electrophysiological and molecular characteristics of the whole-cell Ca2+ current in GH3 clonal pituitary cells. The current inactivation at 0 mV was described by a single exponential function with a time constant of 18.32 ± 1.87 ms (N = 16. The I-V relationship measured with Ca2+ as a charge carrier was shifted to the left when we applied a conditioning pre-pulse of up to -120 mV, indicating that a low voltage-activated current may be present in GH3 cells. Transient currents were first activated at -50 mV and peaked around -20 mV. The half-maximal voltage activation and the slope factors for the two conditions are -35.02 ± 2.4 and 6.7 ± 0.3 mV (pre-pulse of -120 mV, N = 15, and -27.0 ± 0.97 and 7.5 ± 0.7 mV (pre-pulse of -40 mV, N = 9. The 8-mV shift in the activation mid-point was statistically significant (P < 0.05. The tail currents decayed bi-exponentially suggesting two different T-type Ca2+ channel populations. RT-PCR revealed the presence of a1G (CaV3.1 and a1I (CaV3.3 T-type Ca2+ channel mRNA transcripts.

  8. Simulation of forward dark current voltage characteristics of tandem solar cells

    International Nuclear Information System (INIS)

    Rubinelli, F.A.

    2012-01-01

    The transport mechanisms tailoring the shape of dark current–voltage characteristics of amorphous and microcrystalline silicon based tandem solar cell structures are explored with numerical simulations. Our input parameters were calibrated by fitting experimental current voltage curves of single and double junction structures measured under dark and illuminated conditions. At low and intermediate forward voltages the dark current–voltage characteristics show one or two regions with a current–voltage exponential dependence. The diode factor is unique in tandem cells with the same material in both intrinsic layers and two dissimilar diode factors are observed in tandem cells with different materials on the top and bottom intrinsic layers. In the exponential regions the current is controlled by recombination through gap states and by free carrier diffusion. At high forward voltages the current grows more slowly with the applied voltage. The current is influenced by the onset of electron space charge limited current (SCLC) in tandem cells where both intrinsic layers are of amorphous silicon and by series resistance of the bottom cell in tandem cells where both intrinsic layers are of microcrystalline silicon. In the micromorph cell the onset of SCLC becomes visible on the amorphous top sub-cell. The dark current also depends on the thermal generation of electron–hole (e–h) pairs present at the tunneling recombination junction. The highest dependence is observed in the tandem structure where both intrinsic layers are of microcrystalline silicon. The prediction of meaningless dark currents at low forward and reverse voltages by our code is discussed and one solution is given. - Highlights: ► Transport mechanisms shaping the dark current-voltage curves of tandem devices. ► The devices are amorphous and microcrystalline based tandem solar cells. ► Two regions with a current-voltage exponential dependence are observed. ► The tandem J-V diode factor is the

  9. Improvement the Capacity of Cockcroft-Walton High Voltage Source from 300 kV/20 mA to 500 kV/20 mA for Accelerating Voltage of Electron Beam Machine

    International Nuclear Information System (INIS)

    Suprapto; Djasiman

    2002-01-01

    The improvement capacity of Cockcroft-Walton high voltage source from 300 kV/20 mA to 500 kV/mA has been carrying out. To improve the capacity of high voltage source was done by means of increasing the stage number of voltage multiplier from 11 to 18 and its output voltage measuring resistance. Each stage of voltage multiplier consists of 2 capacitors and 2 circuits of high voltage diode. This voltage multiplier is constructed using main components of high voltage capacitor and high voltage diode each of 0.22 μF/50 kV and UF 5408 respectively. To avoid stray discharge and corona it was provided with high voltage electrode and corona ring. The test result indicated that the output voltage obtained from 16 stages was 350 kV according to operating condition of 25 MΩ resistive load and first stage voltage of 28.5 kV with oscillator frequency of 24 Hz. That condition requires anode voltage and current of 5.5 kV and 2.5 A respectively. The no load test for 16 stages indicates 400 kV of output voltage and 28.5 kV first stage voltage. Efficiency of high voltage source was 48 % at 6.75 kW of output power. The expected test of 500 kV with 18 stages of voltage multiplier can not be carried out because of some restrictive of loading system. From the test result can be predicted that the output voltage of 500 kV with 18 stages of voltage multiplier requires 31.2 kV of first stage voltage. Then the expected high voltage source of Cockcroft-Walton is capable as accelerating voltage source for Electron Beam Machine with energy of 500 kV. (author)

  10. The influence of internal current loop on transient response performance of I-V droop controlled paralleled DC-DC converters

    DEFF Research Database (Denmark)

    Wang, Haojie; Han, Minxiao; Guerrero, Josep M.

    2017-01-01

    The external droop control loop of I-V droop control is designed as a voltage loop with embedded virtual impedance, so the internal current loop plays a major role in the system bandwidth. Thus, in this paper, the influence of internal current loop on transient response performance of I-V droop...... controlled paralleled dc-dc converters is analyzed, which is guided and significant for its industry application. The model which is used for dynamic analysis is built, and the root locus method is used based on the model to analyze the dynamic response of the system by shifting different control parameters...

  11. Photonic characterization of capacitance-voltage characteristics in MOS capacitors and current-voltage characteristics in MOSFETs

    International Nuclear Information System (INIS)

    Kim, H. C.; Kim, H. T.; Cho, S. D.; Song, S. J.; Kim, Y. C.; Kim, S. K.; Chi, S. S.; Kim, D. J.; Kim, D. M.

    2002-01-01

    Based on the photonic high-frequency capacitance-voltage (HF-CV) response of MOS capacitors, a new characterization method is reported for the analysis of interface states in MOS systems. An optical source with a photonic energy less than the silicon band-gap energy (hv g ) is employed for the photonic HF-CV characterization of interface states distributed in the photoresponsive energy band (E C - hv t C ). If a uniform distribution of trap levels is assumed, the density of interface states (D it ) in the photoresponsive energy band of MOS capacitors, characterized by the new photonic HF-CV method, was observed to be D it = 1 ∼ 5 x 10 11 eV -1 cm -2 . Photonic current-voltage characteristics (I D - V GS , V DS ) of MOSFETs, which are under control of the photoconductive and the photovoltaic effects, are also investigated under optical illumination

  12. Mechanism of formation of subnanosecond current front in high-voltage pulse open discharge

    Science.gov (United States)

    Schweigert, I. V.; Alexandrov, A. L.; Zakrevsky, Dm. E.; Bokhan, P. A.

    2014-11-01

    The mechanism of subnanosecond current front rise observed previously in the experiment in high-voltage pulse open discharge in helium is studied in kinetic particle-in-cell simulations. The Boltzmann equations for electrons, ions, and fast atoms are solved self-consistently with the Poisson equations for the electrical potential. The partial contributions to the secondary electron emission from the ions, fast atoms, photons, and electrons, bombarding the electrode, are calculated. In simulations, as in the experiment, the discharge glows between two symmetrical cathodes and the anode grid in the midplane at P =6 Torr and the applied voltage of 20 kV. The electron avalanche development is considered for two experimental situations during the last stage of breakdown: (i) with constant voltage and (ii) with decreasing voltage. For case (i), the subnanosecond current front rise is set by photons from the collisional excitation transfer reactions. For the case (ii), the energetic electrons swamp the cathode during voltage drop and provide the secondary electron emission for the subnanosecond current rise, observed in the experiment.

  13. Influence of 2 MeV electrons irradiation on gallium phosphide light-emitting diodes reverse currents

    Directory of Open Access Journals (Sweden)

    V. G. Vorobiov

    2015-10-01

    Full Text Available Results of reverse electrophysical characteristics study of red and green LEDs, initial and irradiated with 2 MeV electrons were given. It was found that reverse current was predominantly caused by carriers tunneling at Urev ≤ 9 V, and by the avalanche multiplication at Urev ≥ 13 V, in the range U = 9 ÷ 13 V both mechanisms are available. Current increase at high voltage areas (Urev > 19 V is limited by the base resistance of diode. In the case of significant reverse currents (I > 1 mA irradiation of diodes leads to the shift of reverse current-voltage characteristics into the high voltages direction.

  14. Low Voltage Current Mode Switched-Current-Mirror Mixer

    Directory of Open Access Journals (Sweden)

    Chunhua Wang

    2009-09-01

    Full Text Available A new CMOS active mixer topology can operate at 1 V supply voltage by use of SCM (switched currentmirror. Such current-mode mixer requires less voltage headroom with good linearization. Mixing is achieved with four improved current mirrors, which are alternatively activated. For ideal switching, the operation is equivalent to a conventional active mixer. This paper analyzes the performance of the SCM mixer, in comparison with the conventional mixer, demonstrating competitive performance at a lower supply voltage. Moreover, the new mixer’s die, without any passive components, is very small, and the conversion gain is easy to adjust. An experimental prototype was designed and simulated in standard chartered 0.18μm RF CMOS Process with Spectre in Cadence Design Systems. Experimental results show satisfactory mixer performance at 2.4 GHz.

  15. A micro-power LDO with piecewise voltage foldback current limit protection

    International Nuclear Information System (INIS)

    Wei Hailong; Liu Youbao; Guo Zhongjie; Liao Xue

    2012-01-01

    To achieve a constant current limit, low power consumption and high driving capability, a micro-power LDO with a piecewise voltage-foldback current-limit circuit is presented. The current-limit threshold is dynamically adjusted to achieve a maximum driving capability and lower quiescent current of only 300 nA. To increase the loop stability of the proposed LDO, a high impedance transconductance buffer under a micro quiescent current is designed for splitting the pole that exists at the gate of the pass transistor to the dominant pole, and a zero is designed for the purpose of the second pole phase compensation. The proposed LDO is fabricated in a BiCMOS process. The measurement results show that the short-circuit current of the LDO is 190 mA, the constant limit current under a high drop-out voltage is 440 mA, and the maximum load current under a low drop-out voltage is up to 800 mA. In addition, the quiescent current of the LDO is only 7 μA, the load regulation is about 0.56% on full scale, the line regulation is about 0.012%/V, the PSRR at 120 Hz is 58 dB and the drop-out voltage is only 70 mV when the load current is 250 mA. (semiconductor integrated circuits)

  16. A Smart Voltage and Current Monitoring System for Three Phase Inverters Using an Android Smartphone Application.

    Science.gov (United States)

    Mnati, Mohannad Jabbar; Van den Bossche, Alex; Chisab, Raad Farhood

    2017-04-15

    In this paper, a new smart voltage and current monitoring system (SVCMS) technique is proposed. It monitors a three phase electrical system using an Arduino platform as a microcontroller to read the voltage and current from sensors and then wirelessly send the measured data to monitor the results using a new Android application. The integrated SVCMS design uses an Arduino Nano V3.0 as the microcontroller to measure the results from three voltage and three current sensors and then send this data, after calculation, to the Android smartphone device of an end user using Bluetooth HC-05. The Arduino Nano V3.0 controller and Bluetooth HC-05 are a cheap microcontroller and wireless device, respectively. The new Android smartphone application that monitors the voltage and current measurements uses the open source MIT App Inventor 2 software. It allows for monitoring some elementary fundamental voltage power quality properties. An effort has been made to investigate what is possible using available off-the-shelf components and open source software.

  17. Voltage-current characteristics of a pin-plate system with different plate configurations

    International Nuclear Information System (INIS)

    Feng, Zhuangbo; Long, Zhengwei

    2013-01-01

    In this paper, the voltage-current (V-I) characteristics of a pin-plate system with four types of collection plate configurations are studied experimentally. The collection plates consider a single metal plate, a metal plate with a fly ash cake layer, a metal plate with a clean filter media and a metal plate with a dirty filter media. The results show that the clean filter media has no obvious effect on the V-I characteristics. But the dirty filter media reduces the current density because of its high resistance. The thick fly ash cake layer increase current density because of the anti-corona effect but the increment is not very obvious.

  18. COAXIAL DISK SHUNT FOR MEASURING IN THE HEAVY-CURRENT CHAIN OF HIGH-VOLTAGE GENERATOR OF STORM DISCHARGES OF IMPULSES OF CURRENT OF ARTIFICIAL LIGHTNING WITH THE INTEGRAL OF ACTION TO 15•106 J/OHM

    Directory of Open Access Journals (Sweden)

    M. I. Baranov

    2017-10-01

    Full Text Available Purpose. Description of construction and basic technical descriptions developed and created in Research & Design Institute «Molniya» National Technical University «Kharkiv Polytechnic Institute» high-voltage heavy-current coaxial disk shunt of type of SC-300M2, allowing reliably to measure the peak-temporal parameters (PTP of impulses of current of artificial lightning in wide peak and temporal ranges with the integral of their action to 15·106 J/Ohm. Methodology. Electrophysics bases of high-voltage impulsive technique, scientific and technical bases of development and creation of high-voltage heavy-current impulsive electrical equipment, including the powerful generators of current of lightning (GCL, and also measuring methods in bit chains powerful high-voltage GCL AVP large impulsive currents of micro- and millisecond temporal ranges. Results. Offered and described new construction of measuring high-voltage heavy-current shunt, containing a measuring round disk from stainless steel easily soiled a 12Х18Н10Т thickness 2 mm and external diameter 80 mm. Experimental a way impulsive active resistance of RS≈0,08 mOhm of the indicated measuring disk and on his basis a calculation coefficient transformation is found of SS of coaxial disk shunt of type of SC-300M2, numeral equal in the concerted mode of operations of his coaxial cable line (CCL SS≈2/RS≈25·103 A/V. It is rotined that it is expedient to use this value SS for measuring in the heavy-current bit chain of GCL ATP impulsive A- and repeated impulsive D- component of current of artificial lightning, and also ATP of aperiodic impulse of current of artificial lightning of temporal form 10 μc/350 μc. It is set that taking into account application in the end CCL of shunt of a co-ordinate divizor of voltage with two output coaxial sockets 1:1 (for SSA≈25·103 A/V and 1:2 (SSC≈12,5·103 A/V at measuring of ATP intermediate B-, protracted C- and shortened protracted C

  19. Water Electrolysis at Different Current - Voltage Regimes

    International Nuclear Information System (INIS)

    Kleperis, J.; Blums, J.; Vanags, M.

    2007-01-01

    Full text: Electrochemical impedance and volt-amperic methods were used to compare an efficiency of water electrolysis for different materials and different electrode configurations. Two and three electrode measurements were made, using standard calomel reference electrode. Non-standard capacitative electrolysis was analyzed in special cell made from cylindrical steel electrodes. Volt-amperic measurements from - 15V to +15V DC didn't indicated the presence of oxidation - reduction reactions when distilled water was used as electrolyte. Impedance measurements showed unusual frequency behavior when the AC voltage increased till 0.5V. Different nickel and carbon electrodes (plate, porous and textile - type) were used to learn classical Faraday electrolysis in strong alkali solutions. Flying increase of current was indicator of the presence of electrolysis, and characteristic potential was used differ between materials accordingly they effectiveness for usage in an electrolyser device. (Aithors)

  20. Ultra-Low Voltage Class AB Switched Current Memory Cell

    DEFF Research Database (Denmark)

    Igor, Mucha

    1996-01-01

    This paper presents the theoretical basis for the design of class AB switched current memory cells employing floating-gate MOS transistors, suitable for ultra-low-voltage applications. To support the theoretical assumptions circuits based on these cells were designed using a CMOS process with thr......This paper presents the theoretical basis for the design of class AB switched current memory cells employing floating-gate MOS transistors, suitable for ultra-low-voltage applications. To support the theoretical assumptions circuits based on these cells were designed using a CMOS process...... with threshold voltages of 0.9V. Both hand calculations and PSPICE simulations showed that the cells designed allowed a maximum signal range better than +/-13 micoamp, with a supply voltage down to 1V and a quiescent bias current of 1 microamp, resulting in a very high current efficiency and effective power...

  1. The effect of applied control strategy on the current-voltage correlation of a solid oxide fuel cell stack during dynamic operation

    Science.gov (United States)

    Szmyd, Janusz S.; Komatsu, Yosuke; Brus, Grzegorz; Ghigliazza, Francesco; Kimijima, Shinji; Ściążko, Anna

    2014-09-01

    This paper discusses the transient characteristics of the planar type SOFC cell stack, of which the standard output is 300 W. The transient response of the voltage to the manipulation of an electric current was investigated. The effects of the response and of the operating condition determined by the operating temperature of the stack were studied by mapping a current-voltage (I-V) correlation. The current-based fuel control (CBFC) was adopted for keeping the fuel utilization factor at constant while the value of the electric current was ramped at the constant rate. The present experimental study shows that the transient characteristics of the cell voltage are determined by primarily the operating temperature caused by the manipulation of the current. Particularly, the slope of the I-V curve and the overshoot found on the voltage was remarkably influenced by the operating temperature. The different values of the fuel utilization factor influence the height of the settled voltages. The CBFC has significance in determining the slope of the I-V characteristic, but the different values ofthe fuel utilization factor does not affect the slope as the operating temperature does. The CBFC essentially does not alter the amplitude of the overshoot on the voltage response, since this is dominated by the operating temperature and its change is caused by manipulating the current.

  2. The effect of applied control strategy on the current-voltage correlation of a solid oxide fuel cell stack during dynamic operation

    Directory of Open Access Journals (Sweden)

    Szmyd Janusz S.

    2014-09-01

    Full Text Available This paper discusses the transient characteristics of the planar type SOFC cell stack, of which the standard output is 300 W. The transient response of the voltage to the manipulation of an electric current was investigated. The effects of the response and of the operating condition determined by the operating temperature of the stack were studied by mapping a current-voltage (I-V correlation. The current-based fuel control (CBFC was adopted for keeping the fuel utilization factor at constant while the value of the electric current was ramped at the constant rate. The present experimental study shows that the transient characteristics of the cell voltage are determined by primarily the operating temperature caused by the manipulation of the current. Particularly, the slope of the I-V curve and the overshoot found on the voltage was remarkably influenced by the operating temperature. The different values of the fuel utilization factor influence the height of the settled voltages. The CBFC has significance in determining the slope of the I-V characteristic, but the different values ofthe fuel utilization factor does not affect the slope as the operating temperature does. The CBFC essentially does not alter the amplitude of the overshoot on the voltage response, since this is dominated by the operating temperature and its change is caused by manipulating the current.

  3. Low-cost wireless voltage & current grid monitoring

    Energy Technology Data Exchange (ETDEWEB)

    Hines, Jacqueline [SenSanna Inc., Arnold, MD (United States)

    2016-12-31

    This report describes the development and demonstration of a novel low-cost wireless power distribution line monitoring system. This system measures voltage, current, and relative phase on power lines of up to 35 kV-class. The line units operate without any batteries, and without harvesting energy from the power line. Thus, data on grid condition is provided even in outage conditions, when line current is zero. This enhances worker safety by detecting the presence of voltage and current that may appear from stray sources on nominally isolated lines. Availability of low-cost power line monitoring systems will enable widespread monitoring of the distribution grid. Real-time data on local grid operating conditions will enable grid operators to optimize grid operation, implement grid automation, and understand the impact of solar and other distributed sources on grid stability. The latter will enable utilities to implement eneygy storage and control systems to enable greater penetration of solar into the grid.

  4. Current and capacitance measurements as a fast diagnostic tool for evaluation of semiconductor parameters

    CERN Document Server

    Kemmer, J; Krause, N; Krieglmeyer, C; Yang Yi

    2000-01-01

    A fast qualitative method is described for evaluation of semiconductor parameters by analyzing both the capacitance/voltage (C/V) and current/voltage (I/V) characteristics of pn- or Schottky-diodes, which are fabricated on the material under investigation. The method is applied for measurement of recombination and generation lifetimes of minority charge carriers and for determination of doping profiles and distribution of active generation/recombination (G/R) centers after irradiation with Am-alpha particles and deep phosphorus implantation. Measurements on epitaxial silicon result in doping profiles and distributions of active impurities within the epi-layer.

  5. Analysis of series resistance effects on forward I - V and C - V characteristics of mis type diodes

    International Nuclear Information System (INIS)

    Altindal, S.; Tekeli, Z.; Karadeniz, S.; Tugluoglu, N.; Ercan, I.

    2002-01-01

    In order to determine the series resistance R s , we have followed Lie et al., Cheung et al. and Kang et al., from the plot of I vs dV/dLn(I) which was linear curve over a wide range of current values at each temperature. The values of Rs were obtained from the slope of the linear parts of the curves and then the series resistance at each temperature has been evaluated at Ln(I) vs (V-IR s ) curves. The curves are linear over a wide range of voltage. The most reliable values of ideality factor n and reverse saturation current Is were then determined. In addition to role of series resistance on the C-V and G-V characteristics of diode have been investigated. Both C-V and G-V measurements show that the measured capacitance and conductance seriously varies with applied bias and frequency due to presence of R s . The density of interface states, barrier height and series resistance from the forward bias I-V characteristics using this method agrees very well with that obtained from the capacitance technique. It is clear that ignoring the series resistance (device with high series resistance) can lead to significant errors in the analysis of the I-V-T, C-V-f and G-V-f characteristics

  6. Current-Voltage Characteristics of Bi-dithiolbenzene in Parallel Arrangement

    International Nuclear Information System (INIS)

    Boudjella, Aissa

    2011-01-01

    The low voltage conductance of interacting two 1,4-dithiolbenzene (DTB) molecules is investigated. The simulation results show that the electron transport can be controlled either by changing the Fermi level position E f or modifying its inter-molecular spacing d. Molecular assembly system with close interaction between DTB units, affects significantly the conductance. In addition, the position of the Fermi plays an important role in determining the current flow. Moreover, it is important to note that E f affects not only the threshold voltage V th , but also the saturation voltage V sat . When E f approaches the LUMO energy level, V th decreases, while V sat increases. To conclude, the threshold voltage and the saturation voltage depend on the Fermi level position and the inter-molecular spacing.

  7. Current-voltage characteristics of quantum-point contacts in the closed-channel regime: Transforming the bias voltage into an energy scale

    DEFF Research Database (Denmark)

    Gloos, K.; Utko, P.; Aagesen, M.

    2006-01-01

    We investigate the I(V) characteristics (current versus bias voltage) of side-gated quantum-point contacts, defined in GaAs/AlxGa1-xAs heterostructures. These point contacts are operated in the closed-channel regime, that is, at fixed gate voltages below zero-bias pinch-off for conductance. Our....... Such a built-in energy-voltage calibration allows us to distinguish between the different contributions to the electron transport across the pinched-off contact due to thermal activation or quantum tunneling. The first involves the height of the barrier, and the latter also its length. In the model that we...

  8. Digital measurement system for the LHC klystron high voltage modulator.

    CERN Document Server

    Mikkelsen, Anders

    Accelerating voltage in the Large Hadron Collider (LHC) is created by a means of 16 superconducting standing wave RF cavities, each fed by a 400MHz/300kW continuous wave klystron amplifier. Part of the upgrade program for the LHC long shutdown one is to replace the obsolete analogue current and voltage measurement circuitry located in the high voltage bunkers by a new, digital system, using ADCs and optical fibres. A digital measurement card is implemented and integrated into the current HV modulator oil tank (floating at -58kV) and interfaced to the existing digital VME boards collecting the data for several klystrons at the ground potential. Measured signals are stored for the logging, diagnostics and post-mortem analysis purposes.

  9. Morphology and current-voltage characteristics of nanostructured pentacene thin films probed by atomic force microscopy.

    Science.gov (United States)

    Zorba, S; Le, Q T; Watkins, N J; Yan, L; Gao, Y

    2001-09-01

    Atomic force microscopy was used to study the growth modes (on SiO2, MoS2, and Au substrates) and the current-voltage (I-V) characteristics of organic semiconductor pentacene. Pentacene films grow on SiO2 substrate in a layer-by-layer manner with full coverage at an average thickness of 20 A and have the highest degree of molecular ordering with large dendritic grains among the pentacene films deposited on the three different substrates. Films grown on MoS2 substrate reveal two different growth modes, snowflake-like growth and granular growth, both of which seem to compete with each other. On the other hand, films deposited on Au substrate show granular structure for thinner coverages (no crystal structure) and dendritic growth for higher coverages (crystal structure). I-V measurements were performed with a platinum tip on a pentacene film deposited on a Au substrate. The I-V curves on pentacene film reveal symmetric tunneling type character. The field dependence of the current indicates that the main transport mechanism at high field intensities is hopping (Poole-Frenkel effect). From these measurements, we have estimated a field lowering coefficient of 9.77 x 10(-6) V-1/2 m1/2 and an ideality factor of 18 for pentacene.

  10. Note: Measuring breakdown characteristics during the hot re-ignition of high intensity discharge lamps using high frequency alternating current voltage.

    Science.gov (United States)

    van den Bos, R A J M; Sobota, A; Manders, F; Kroesen, G M W

    2013-04-01

    To investigate the cold and hot re-ignition properties of High Intensity Discharge (HID) lamps in more detail an automated setup was designed in such a way that HID lamps of various sizes and under different background pressures can be tested. The HID lamps are ignited with a ramped sinusoidal voltage signal with frequencies between 60 and 220 kHz and with amplitude up to 7.5 kV. Some initial results of voltage and current measurements on a commercially available HID lamp during hot and cold re-ignition are presented.

  11. Evaluation of the Electronic Structure of Single-Molecule Junctions Based on Current-Voltage and Thermopower Measurements: Application to C60 Single-Molecule Junction.

    Science.gov (United States)

    Komoto, Yuki; Isshiki, Yuji; Fujii, Shintaro; Nishino, Tomoaki; Kiguchi, Manabu

    2017-02-16

    The electronic structure of molecular junctions has a significant impact on their transport properties. Despite the decisive role of the electronic structure, a complete characterization of the electronic structure remains a challenge. This is because there is no straightforward way of measuring electron spectroscopy for an individual molecule trapped in a nanoscale gap between two metal electrodes. Herein, a comprehensive approach to obtain a detailed description of the electronic structure in single-molecule junctions based on the analysis of current-voltage (I-V) and thermoelectric characteristics is described. It is shown that the electronic structure of the prototypical C 60 single-molecule junction can be resolved by analyzing complementary results of the I-V and thermoelectric measurement. This combined approach confirmed that the C 60 single-molecule junction was highly conductive with molecular electronic conductances of 0.033 and 0.003 G 0 and a molecular Seebeck coefficient of -12 μV K -1 . In addition, we revealed that charge transport was mediated by a LUMO whose energy level was located 0.5≈0.6 eV above the Fermi level of the Au electrode. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  12. Illumination dependence of I-V and C-V characterization of Au/InSb/InP(1 0 0) Schottky structure

    International Nuclear Information System (INIS)

    Akkal, B.; Benamara, Z.; Bouiadjra, N. Bachir; Tizi, S.; Gruzza, B.

    2006-01-01

    The effects of surface preparation and illumination on electric parameters of Au/InSb/InP(100) Schottky diode were investigated, in the later diode InSb forms a fine restructuration layer allowing to block In atoms migration to surface. In order to study the electric characteristics under illumination, we make use of an He-Ne laser of 1 mW power and 632.8 nm wavelength. The current-voltage I(V G ), the capacitance-voltage C(V G ) measurements were plotted and analysed. The saturation current I s , the serial resistance R s and the mean ideality factor n are, respectively, equal to 2.03 x 10 -5 A, 85 Ω, 1.7 under dark and to 3.97 x 10 -5 A, 67 Ω, 1.59 under illumination. The analysis of I(V G ) and C(V G ) characteristics allows us to determine the mean interfacial state density N ss and the transmission coefficient θ n equal, respectively, to 4.33 x 10 12 eV -1 cm -2 , 4.08 x 10 -3 under dark and 3.79 x 10 12 eV -1 cm -2 and 5.65 x 10 -3 under illumination. The deep discrete donor levels presence in the semiconductor bulk under dark and under illumination are responsible for the non-linearity of the C -2 (V G ) characteristic

  13. A 600kV 15mA Cockcroft-Walton high-voltage power supply with high stability and low-ripple voltage

    International Nuclear Information System (INIS)

    Su Tongling; Zhang Yimin; Chen Shangwen; Liu Yantong; Lv Huiyi; Liu Jiangtao

    2006-01-01

    A Cockcroft-Walton high-voltage power supply with high stability and low-ripple voltage has been developed. This power supply has been operated in a ns pulse neutron generator. The maximum non-load voltage is 600kV while the working voltage and load current are 550kV and 15mA, respectively. The tested results indicate that when the power supply is operated at 300kV, 6.7mA and the input voltage varies +/-10%, the long-term stability of the output voltage is S=(0.300-1.006)x10 -3 . The ripple voltage is δU P-P =6.2V at 300kV, 6.8-8.3mA and the ratio of δU P-P to the output voltage V H is δU P-P /V H =2.1x10 -5

  14. Current-voltage characteristics of the semiconductor nanowires under the metal-semiconductor-metal structure

    Science.gov (United States)

    Wen, Jing; Zhang, Xitian; Gao, Hong; Wang, Mingjiao

    2013-12-01

    We present a method to calculate the I-V characteristics of semiconductor nanowires under the metal-semiconductor-metal (MSM) structure. The carrier concentration as an important parameter is introduced into the expression of the current. The subband structure of the nanowire has been considered for associating it with the position of the Fermi level and circumventing the uncertainties of the contact areas in the contacts. The tunneling and thermionic emission currents in the two Schottky barriers at the two metal-semiconductor contacts are discussed. We find that the two barriers have different influences on the I-V characteristics of the MSM structure, one of which under the forward bias plays the role of threshold voltage if its barrier height is large and the applied voltage is small, and the other under the reverse bias controls the shapes of I-V curves. Our calculations show that the shapes of the I-V curves for the MSM structure are mainly determined by the barrier heights of the contacts and the carrier concentration. The nearly identical I-V characteristics can be obtained by using different values of the barrier heights and carrier concentration, which means that the contact type conversion can be ascribed not only to the changes of the barrier heights but also that of the carrier concentration. We also discuss the mechanisms of the ohmic-Schottky conversions and clarify the ambiguity in the literature. The possibility about the variation of the carrier concentration under the applied fields has been confirmed by experimental results.

  15. Electrical Characterization of Graphite/InP Schottky Diodes by I-V-T and C-V Methods

    Science.gov (United States)

    Tiagulskyi, Stanislav; Yatskiv, Roman; Grym, Jan

    2018-02-01

    A rectifying junction was prepared by casting a drop of colloidal graphite on the surface of an InP substrate. The electrophysical properties of graphite/InP junctions were investigated in a wide temperature range. Temperature-dependent I-V characteristics of the graphite/InP junctions are explained by the thermionic emission mechanism. The Schottky barrier height (SBH) and the ideality factor were found to be 0.9 eV and 1.47, respectively. The large value of the SBH and its weak temperature dependence are explained by lateral homogeneity of the junction, which is related to the structure of the graphite layer. The moderate disagreement between the current-voltage and capacitance-voltage measurements is attributed to the formation of interfacial native oxide film on the InP surface.

  16. 5.0 kV breakdown-voltage vertical GaN p-n junction diodes

    Science.gov (United States)

    Ohta, Hiroshi; Hayashi, Kentaro; Horikiri, Fumimasa; Yoshino, Michitaka; Nakamura, Tohru; Mishima, Tomoyoshi

    2018-04-01

    A high breakdown voltage of 5.0 kV has been achieved for the first time in vertical GaN p-n junction diodes by using our newly developed guard-ring structures. A resistance device was inserted between the main diode portion and the guard-ring portion in a ring-shaped p-n diode to generate a voltage drop over the resistance device by leakage current flowing through the guard-ring portion under negatively biased conditions before breakdown. The voltage at the outer mesa edge of the guard-ring portion, where the electric field intensity is highest and the destructive breakdown usually occurs, is decreased by the voltage drop, so the electric field concentration in the portion is reduced. By adopting this structure, the breakdown voltage (V B) is raised by about 200 V. Combined with a low measured on-resistance (R on) of 1.25 mΩ cm2, Baliga’s figure of merit (V\\text{B}2/R\\text{on}) was as high as 20 GW/cm2.

  17. Establishment of an easy Ic measurement method of HTS superconducting tapes using clipped voltage taps

    International Nuclear Information System (INIS)

    Shin, Hyung Seop; Nisay, Arman; Dedicatoria, Marlon; Sim, Ki Deok

    2014-01-01

    The critical current, I c of HTS superconducting tapes can be measured by transport or contactless method. Practically, the transport method using the four-probe method is the most common. In this study, a simple test procedure by clipping the voltage lead taps have been introduced instead of soldering which reduces time and effort and thereby achieving a much faster measurement of I c . When using a pair of iron clips, I c value decreased as compared with the measured one by standard method using soldered voltage taps and varies with the width of the clipped specimen part. However, when using a pure Cu clip, both by clipping and by soldering voltage taps give a comparable result and I c measured are equal and close to the samples specification. As a result, material to be used as voltage clip should be considered and should not influence the potential voltage between the leads during I c measurement. Furthermore, the simulation result of magnetic flux during I c measurement test showed that the decrease of I c observed in the experiment is due to the magnetic flux density, By produced at the clipped part of the sample by the operating current with iron clips attached to the sample.

  18. Angular-dependent I-V characteristics in borocarbide superconductor YNi2B2C

    International Nuclear Information System (INIS)

    Chu, R M; Chen, Q Y; Chu, W K

    2006-01-01

    We present angular-dependent current-voltage (I-V) measurements in borocarbide YNi 2 B 2 C single crystals near the vortex-glass irreversible line. External magnetic fields are applied along the angle θ with respect to the c-axis. The nonlinear I-V curves reveal scaling behaviour near the transition. Using the scaling analysis, the relevant critical exponents and vortex transition temperatures are determined for all orientations. The data agrees well with the vortex-glass (VG) model. No evidence was found that supports the existence of a Bose-glass (BG) type of transition

  19. The Effect of Image Potential on the Current-Voltage Characteristics of a Ferritin-layer

    Directory of Open Access Journals (Sweden)

    Eunjung Bang

    2010-11-01

    Full Text Available Considering for the concept of power storage systems, such as those used to supply power to microelectronic devices, ferritins have aroused a lot of interests for applications in bioelectrochemical devices. And electron transfer rates from the proteins to electrode surface are key determinants of overall performance and efficiency of the ferritin-based devices. Here we have investigated the electron transport mechanism of ferritin layer which was immobilized on an Au electrode. The current-voltage (I-V curves are obtained by a conductive atomic force microscope (c-AFM as a function of contact area between AFM tip and the ferritin layer. In the low voltage region, I-V curves are affected by both Fowler-Nordheim tunneling and image force. On the other hand, the experimental results are consistent with a Simmons model in a high voltage region, indicating that, as the voltage increases, the image potential has a dominant effect on the electron transport mechanism. These results are attributed to the film-like character of the ferritin layer, which generates an image potential to lower the barrier height in proportion to the voltage increment.

  20. Thyristor current-pulse generator for betatron electromagnet with independent low-voltage supply

    International Nuclear Information System (INIS)

    Baginskii, B.A.; Makarevich, V.N.; Shtein, M.M.

    1989-01-01

    A thyristor generator is described that produces unipolar current pulses in the winding of a betatron electromagnet. The voltage on the electro-magnet is increased and the shape of the current pulses is improved by use of an intermediate inductive storage device. The current pulses have a duration of 11 msec, an amplitude of 190 A, and a repetition frequency of 50 Hz. The maximum magnetic-field energy is 450 J, the voltage on the electromagnet winding is 1.5 kV, and the supply voltage is 27 V

  1. Radio frequency glow discharge source with integrated voltage and current probes used for evaluation of discharge parameters

    International Nuclear Information System (INIS)

    Wilken, L.; Hoffmann, V.; Wetzig, K.

    2006-01-01

    A radio frequency (rf) Grimm-type glow discharge source for the chemical analysis of solid samples, with integrated voltage and current probes, was developed. All elements of a plasma equivalent circuit are determined from the measured current-voltage characteristics. The procedure is based on the independent evaluation of the ion current and electron current region. The physical meaning of the parameters is investigated by comparisons with measurements from dc glow discharges. We found that the reduced rf current of the powered electrode is comparable to the reduced current in dc discharges. A formula is developed that corrects the reduced current due to gas heating. The sheath thickness at the powered rf electrode is evaluated and is between 75 and 1100 μm. The voltage of the bulk plasma is in the range 2-15 V, and the resistance is between 30 and 400 Ω. The bulk plasma consumes about 3% of the total power, and the reduced voltage is comparable to the reduced electrical field in the positive column of direct current discharges. The sheath voltage at the grounded electrode is in the range 25-100 V, the capacities are between 10 and 400 pF, and the resistances are in the range 100 Ω-5000 Ω. We also found invariants for the evaluated sheath parameters

  2. Electrooptic Methods for Measurement of Small DC Currents at High Voltage Level

    DEFF Research Database (Denmark)

    Tønnesen, Ole; Beatty, Neville; Skilbreid, Asbjørn Ottar

    1989-01-01

    collectors are connected via resistors RA and RB to the protective side of the voltage to be measured and the emitters to the negative side. The currents flowing in to the bases of the transistors are independently controlled by the light levels following on the two photodiodes PDA, PDB....

  3. Subcell Light Current-Voltage Characterization of Irradiated Multijunction Solar Cell

    Directory of Open Access Journals (Sweden)

    Walker Don

    2017-01-01

    Full Text Available The degradation of individual subcell J-V parameters, such as short circuit current, open circuit voltage, fill factor, and power of a GaInP/GaInAs/Ge triple junction solar cell by 1 MeV electrons were derived utilizing the spectral reciprocity relation between electroluminescence and external quantum efficiency. After exposure to a fluence of 1 × 1015 1 MeV electrons, it was observed that up to 67% of the voltage loss is from the middle, GaInAs subcell. Also, the dark saturation current of the Ge and GaInAs subcells increased but a simultaneous decrease in ideality factor caused a reduction of the open circuit voltage. The reduced ideality factor further indicates a change in the primary recombination mechanism.

  4. Leakage Currents in Low-Voltage PME and BME Ceramic Capacitors

    Science.gov (United States)

    Teverovsky, Alexander

    2015-01-01

    Introduction of BME capacitors to high-reliability electronics as a replacement for PME capacitors requires better understanding of changes in performance and reliability of MLCCs to set justified screening and qualification requirements. In this work, absorption and leakage currents in various lots of commercial and military grade X7R MLCCs rated to 100V and less have been measured to reveal difference in behavior of PME and BME capacitors in a wide range of voltages and temperatures. Degradation of leakage currents and failures in virgin capacitors and capacitors with introduced cracks has been studied at different voltages and temperatures during step stress highly accelerated life testing. Mechanisms of charge absorption, conduction and degradation have been discussed and a failure model in capacitors with defects suggested.

  5. Method and apparatus for remote tube crevice detection by current and voltage probe resistance measurement

    Science.gov (United States)

    Kikta, Thomas J.; Mitchell, Ronald D.

    1992-01-01

    A method and apparatus for determining the extent of contact between an electrically conducting tube and an electrically conductive tubesheet surrounding the tube, based upon the electrical resistance of the tube and tubesheet. A constant current source is applied to the interior of the electrically conducting tube by probes and a voltmeter is connected between other probes to measure the voltage at the point of current injection, which is inversely proportional to the amount of contact between the tube and tubesheet. Namely, the higher the voltage measured by the voltmeter, the less contact between the tube and tubesheet.

  6. Determination of the diagnostic x-ray tube practical peak voltage (PPV) from average or average peak voltage measurements

    Energy Technology Data Exchange (ETDEWEB)

    Hourdakis, C J, E-mail: khour@gaec.gr [Ionizing Radiation Calibration Laboratory-Greek Atomic Energy Commission, PO Box 60092, 15310 Agia Paraskevi, Athens, Attiki (Greece)

    2011-04-07

    The practical peak voltage (PPV) has been adopted as the reference measuring quantity for the x-ray tube voltage. However, the majority of commercial kV-meter models measure the average peak, U-bar{sub P}, the average, U-bar, the effective, U{sub eff} or the maximum peak, U{sub P} tube voltage. This work proposed a method for determination of the PPV from measurements with a kV-meter that measures the average U-bar or the average peak, U-bar{sub p} voltage. The kV-meter reading can be converted to the PPV by applying appropriate calibration coefficients and conversion factors. The average peak k{sub PPV,kVp} and the average k{sub PPV,Uav} conversion factors were calculated from virtual voltage waveforms for conventional diagnostic radiology (50-150 kV) and mammography (22-35 kV) tube voltages and for voltage ripples from 0% to 100%. Regression equation and coefficients provide the appropriate conversion factors at any given tube voltage and ripple. The influence of voltage waveform irregularities, like 'spikes' and pulse amplitude variations, on the conversion factors was investigated and discussed. The proposed method and the conversion factors were tested using six commercial kV-meters at several x-ray units. The deviations between the reference and the calculated - according to the proposed method - PPV values were less than 2%. Practical aspects on the voltage ripple measurement were addressed and discussed. The proposed method provides a rigorous base to determine the PPV with kV-meters from U-bar{sub p} and U-bar measurement. Users can benefit, since all kV-meters, irrespective of their measuring quantity, can be used to determine the PPV, complying with the IEC standard requirements.

  7. Design and construction of constant voltage and current regulated source with proper characteristics to be used in electronics laboratory designs

    International Nuclear Information System (INIS)

    Peon A, R.

    1978-01-01

    A regulated direct current feeding source was designed for the Nuclear Energy National Institute Electronics Labortory, with the following characteristics: a) voltage input 105-130V a.c. 50-60 Hz; b) voltage output 0.40 V d.c.; c) output current 0-2 Amp d.c.; d) load regulation 0.001%; e) line regulation 0.001%; f) ripple and noise 200 μ Vpp; g) temperature interval 3-60 0 C; h) stability 0.5%; i) output impedance as voltage source 0.01 ohms; j) transient response 50 μ seg. Besides of operating normally, that is as voltage source or current-source through the front controls, the source can be used and interconnected with one or other compatible sources (autoseries, autoparallel and programmed reference). The source will cost 70,000 pesos approximately. (author)

  8. Research of Measurement Circuits for High Voltage Current Transformer Based on Rogowski Coils

    Directory of Open Access Journals (Sweden)

    Yan Bing

    2014-02-01

    Full Text Available The electronic current transformer plays an irreplaceable position in the field of relay protection and current measurement of the power system. Rogowski coils are used as sensor parts, and in order to improve the measurement accuracy and reliability, the circuits at the high voltage system are introduced and improved in this paper, including the analog integral element, the filtering circuit and the phase shift circuit. Simulations results proved the reliability and accuracy of the improved circuits.

  9. Determination of the cathode fall voltage in fluorescent lamps by measurement of the operating voltage

    International Nuclear Information System (INIS)

    Hilscher, A.

    2002-01-01

    A new method for the determination of the cathode fall voltage of fluorescent lamps is shown. The cathode fall voltage can be determined by measurement of the lamp operating voltage at constant lamp wall temperature, constant discharge current and variation of the electrode heating current. Commercial lamps, which do not need to be specially prepared, can be used for the measurement. The results show good correlation to other measurements of the cathode fall voltage at various discharge currents by means of capacitive coupling. The measured values of the cathode fall voltage are used for determining the minimum, target and maximum setting of the sum of the squares of the pin currents of one electrode (the so-called SOS value) as a function of the discharge current in fluorescent lamp dimming. (author)

  10. Mitigation of Voltage and Current Harmonics in Grid-Connected Microgrids

    DEFF Research Database (Denmark)

    Savaghebi, Mehdi; Guerrero, Josep M.; Jalilian, Alireza

    2012-01-01

    In this paper, a control approach is proposed for selective compensation of main voltage and current harmonics in grid-connected microgrids. Two modes of compensation are considered, i.e. voltage and current compensation modes. In the case that sensitive loads are connected to the point of common...... coupling (PCC), voltage compensation mode is activated in order to provide a high voltage quality at PCC. Otherwise, grid current harmonics are mitigated (current compensation mode) in order to avoid excessive harmonic supply by the grid. In both modes, harmonic compensation is achieved through proper...... control of distributed generators (DGs) interface converters. The compensation effort of each harmonic is shared considering the corresponding current harmonic supplied by the DGs. The control system of each DG comprises harmonic compensator, power controllers, voltage and current controllers and virtual...

  11. Comment on 'Temperature dependence of the current-voltage characteristics of Sn/PANI/p-Si/Al heterojunctions'

    Energy Technology Data Exchange (ETDEWEB)

    Pipinys, P; Rimeika, A [Department of Physics, Vilnius Pedagogical University, Studentu 39, LT-08106 Vilnius (Lithuania)], E-mail: ftfdekanas@vpu.lt

    2008-02-27

    Current-voltage characteristics of Sn/PANI/p-Si/Al heterojunctions, measured in the temperature range 140-280 K by Kaya et al (2007 J. Phys.: Condens. Matter 19 406205), are reinterpreted in the framework of phonon-assisted tunnelling theory, as a free-charge-carrier generation mechanism in the strong electrical field. It is shown that phonon-assisted tunnelling more adequately describes the peculiarities of the variation of I-V data with temperature in PANI polymers. (comment)

  12. Current-voltage analysis of the record-efficiency CuGaSe2 solar cell: Application of the current separation method and the interface recombination model

    International Nuclear Information System (INIS)

    Saad, M.; Kasis, A.

    2011-01-01

    Current-voltage (j-V) characteristics of the record-efficiency CuGaSe 2 solar cell measured under several illumination levels are analyzed using a two-diode equation for a more accurate description of cell behavior. The contribution of each diode to the total cell j-V characteristic under illumination was estimated using the current separation method presented recently. This is performed in an effort to identify the distinctive features of this record-efficiency cell which have led to the up-to-date highest open circuit voltage of V o c = 946 mV and fill factor of FF = 66.5% for CuGaSe 2 solar cells. Furthermore, the interface recombination component of the cell current under illumination is quantitatively discussed applying the interface recombination model presented earlier. (author)

  13. Mathematical model of voltage-current characteristics of Bi(2223)/Ag magnets under an external magnetic field

    CERN Document Server

    Pitel, J; Lehtonen, J; Kovács, P

    2002-01-01

    We have developed a mathematical model, which enables us to predict the voltage-current V(I) characteristics of a solenoidal high-temperature superconductor (HTS) magnet subjected to an external magnetic field parallel to the magnet axis. The model takes into account the anisotropy in the critical current-magnetic field (I sub c (B)) characteristic and the n-value of Bi(2223)Ag multifilamentary tape at 20 K. From the power law between the electric field and the ratio of the operating and critical currents, the voltage on the magnet terminals is calculated by integrating the contributions of individual turns. The critical current of each turn, at given values of operating current and external magnetic field, is obtained by simple linear interpolation between the two suitable points of the I sub c (B) characteristic, which corresponds to the angle alpha between the vector of the resulting magnetic flux density and the broad tape face. In fact, the model is valid for any value and orientation of external magneti...

  14. Current-voltage temperature characteristics of Au/n-Ge (1 0 0) Schottky diodes

    Energy Technology Data Exchange (ETDEWEB)

    Chawanda, Albert, E-mail: albert.chawanda@up.ac.za [Midlands State University, Bag 9055 Gweru (Zimbabwe); University of Pretoria, 0002 Pretoria (South Africa); Mtangi, Wilbert; Auret, Francois D; Nel, Jacqueline [University of Pretoria, 0002 Pretoria (South Africa); Nyamhere, Cloud [Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Diale, Mmantsae [University of Pretoria, 0002 Pretoria (South Africa)

    2012-05-15

    The variation in electrical characteristics of Au/n-Ge (1 0 0) Schottky contacts have been systematically investigated as a function of temperature using current-voltage (I-V) measurements in the temperature range 140-300 K. The I-V characteristics of the diodes indicate very strong temperature dependence. While the ideality factor n decreases, the zero-bias Schottky barrier height (SBH) ({Phi}{sub B}) increases with the increasing temperature. The I-V characteristics are analyzed using the thermionic emission (TE) model and the assumption of a Gaussian distribution of the barrier heights due to barrier inhomogeneities at the metal-semiconductor interface. The zero-bias barrier height {Phi}{sub B} vs. 1/2 kT plot has been used to show the evidence of a Gaussian distribution of barrier heights and values of {Phi}{sub B}=0.615 eV and standard deviation {sigma}{sub s0}=0.0858 eV for the mean barrier height and zero-bias standard deviation have been obtained from this plot, respectively. The Richardson constant and the mean barrier height from the modified Richardson plot were obtained as 1.37 A cm{sup -2} K{sup -2} and 0.639 eV, respectively. This Richardson constant is much smaller than the reported of 50 A cm{sup -2} K{sup -2}. This may be due to greater inhomogeneities at the interface.

  15. Temperature dependence and effects of series resistance on current and admittance measurements of Al/SnO2/p-Si MIS diode

    International Nuclear Information System (INIS)

    Altindal, S.; Tekeli, Z.; Karadeniz, S.; Sahingoez, R.

    2002-01-01

    Temperature dependency and the series resistance effect on I-V, C-V and G-V characteristics of Al/SnO 2 /p-Si MIS diode were investigated in the temperature range 150-350 K. The current-voltage (I-V) analysis in this temperature range gives the saturation current (10''-''9 - 10''-''5 A), the ideality factor (6-1.8), the barrier height Φ B (I-V) (0.3-0.65 eV) the density of interface states D it (8x10''1''3 - 1x10''1''3 eV''-''1cm''-''2) and the series resistance R s (500-100 Ω). The decreases with increasing temperature of density of interface states is the result of molecular restructuring and reordering at the metal-semiconductor interface. The value of series resistance 520 Ω was calculated from the admittance measurement at room temperature and enough high frequency (500 khz) when the diode is biased in strong accumulation region. The admittance frequency (C-V and G-V) measurement confirmed that the measured capacitance (C m ) and conductance (G m ) varies with applied voltage and frequency due to the presence of density of interface states in the MIS diode, interfacial insulator layer and enough high series resistance. Similar results have been observed on MIS type Schottky diodes

  16. Current distribution measurements inside an electromagnetic plasma gun operated in a gas-puff mode.

    Science.gov (United States)

    Poehlmann, Flavio R; Cappelli, Mark A; Rieker, Gregory B

    2010-12-01

    Measurements are presented of the time-dependent current distribution inside a coaxial electromagnetic plasma gun. The measurements are carried out using an array of six axially distributed dual-Rogowski coils in a balanced circuit configuration. The radial current distributions indicate that operation in the gas-puff mode, i.e., the mode in which the electrode voltage is applied before injection of the gas, results in a stationary ionization front consistent with the presence of a plasma deflagration. The effects of varying the bank capacitance, transmission line inductance, and applied electrode voltage were studied over the range from 14 to 112 μF, 50 to 200 nH, and 1 to 3 kV, respectively.

  17. High power thyristors with 5 kV blocking voltage. Volume 1: Development of high-voltage-thyristors (4.5 kV) with good dynamic properties

    Science.gov (United States)

    Lock, K.; Patalong, H.; Platzoeder, K.

    1979-01-01

    Using neutron irradiated silicon with considerably lower spread in resistivity as compared to conventionally doped silicon it was possible to produce power thyristors with breakdown voltages between 3.5 kV and 5.5 kV. The thyristor pellets have a diameter of 50 mm. Maximum average on-state currents of 600 to 800 A can be reached with these elements. The dynamic properties of the thryistors could be improved to allow standard applications up to maximum repetitive voltages of 4.5 kV.

  18. Analysis of the current-voltage characteristics of polymer-based organic light-emitting diodes (OLEDs deposited by spin coating

    Directory of Open Access Journals (Sweden)

    Ricardo Vera

    2010-04-01

    Full Text Available Polymer-based organic light-emitting diodes (OLEDs with the structure ITO / PEDOT:PSS / MDMO-PPV / Metal were prepared by spincoating. It is known that electroluminescence of these devices is strongly dependent on the material used as cathode and on the depositionparameters of the polymer electroluminescent layer MDMO-PPV. Objective. In this work the effect of i the frequency of the spin coater(1000-8000 rpm, ii the concentration of the MDMO-PPV: Toluene solution, and iii the material used as cathode (Aluminium or Silveron the electrical response of the devices, was evaluated through current-voltage (I-V measurements. Materials and methods. PEDOT:PPSand MDMO-PPV organic layers were deposited by spin coating on ITO substrates, and the OLED structure was completed with cathodesof aluminium and silver. The electric response of the devices was evaluated based on the I-V characteristics. Results. Diodes prepared withthinner organic films allow higher currents at lower voltages; this can be achieved either by increasing the frequency of the spin coater orby using concentrations of MDMO-PPV: Toluene lower than 2% weight. A fit of the experimental data showed that the diodes have twocontributions to the current. The first one is attributed to parasitic currents between anode and cathode, and the other one is a parallel currentthrough the organic layer, in which the carrier injection mechanism is mediated by thermionic emission. Conclusions. The results of thefitting and the energy level alignment through the whole structure show that PPV-based OLEDs are unipolar devices, with current mainlyattributed to hole transport.

  19. Modelling of illuminated current–voltage characteristics to evaluate leakage currents in long wavelength infrared mercury cadmium telluride photovoltaic detectors

    International Nuclear Information System (INIS)

    Gopal, Vishnu; Qiu, WeiCheng; Hu, Weida

    2014-01-01

    The current–voltage characteristics of long wavelength mercury cadmium telluride infrared detectors have been studied using a recently suggested method for modelling of illuminated photovoltaic detectors. Diodes fabricated on in-house grown arsenic and vacancy doped epitaxial layers were evaluated for their leakage currents. The thermal diffusion, generation–recombination (g-r), and ohmic currents were found as principal components of diode current besides a component of photocurrent due to illumination. In addition, both types of diodes exhibited an excess current component whose growth with the applied bias voltage did not match the expected growth of trap-assisted-tunnelling current. Instead, it was found to be the best described by an exponential function of the type, I excess  = I r0  + K 1 exp (K 2 V), where I r0 , K 1 , and K 2 are fitting parameters and V is the applied bias voltage. A study of the temperature dependence of the diode current components and the excess current provided the useful clues about the source of origin of excess current. It was found that the excess current in diodes fabricated on arsenic doped epitaxial layers has its origin in the source of ohmic shunt currents. Whereas, the source of excess current in diodes fabricated on vacancy doped epitaxial layers appeared to be the avalanche multiplication of photocurrent. The difference in the behaviour of two types of diodes has been attributed to the difference in the quality of epitaxial layers

  20. Absolute Determination of High DC Voltages by Means of Frequency Measurement

    Science.gov (United States)

    Peier, Dirk; Schulz, Bernd

    1983-01-01

    A novel absolute measuring procedure is presented for the definition of fixed points of the voltage in the 100 kV range. The method is based on transit time measurements with accelerated electrons. By utilizing the selective interaction of a monoenergetic electron beam with the electromagnetic field of a special cavity resonator, the voltage is referred to fundamental constants and the base unit second. Possible balance voltages are indicated by a current detector. Experimental investigations are carried out with resonators in the normal conducting range. With a copper resonator operating at the temperature of boiling nitrogen (77 K), the relative uncertainty of the voltage points is estimated to be +/- 4 × 10-4. The technically realizable uncertainty can be reduced to +/- 1 × 10-5 by the proposed application of a superconducting niobium resonator. Thus this measuring device becomes suitable as a primary standard for the high-voltage range.

  1. PV source based high voltage gain current fed converter

    Science.gov (United States)

    Saha, Soumya; Poddar, Sahityika; Chimonyo, Kudzai B.; Arunkumar, G.; Elangovan, D.

    2017-11-01

    This work involves designing and simulation of a PV source based high voltage gain, current fed converter. It deals with an isolated DC-DC converter which utilizes boost converter topology. The proposed converter is capable of high voltage gain and above all have very high efficiency levels as proved by the simulation results. The project intends to produce an output of 800 V dc from a 48 V dc input. The simulation results obtained from PSIM application interface were used to analyze the performance of the proposed converter. Transformer used in the circuit steps up the voltage as well as to provide electrical isolation between the low voltage and high voltage side. Since the converter involves high switching frequency of 100 kHz, ultrafast recovery diodes are employed in the circuitry. The major application of the project is for future modeling of solar powered electric hybrid cars.

  2. Investigation of the double exponential in the current-voltage characteristics of silicon solar cells

    Science.gov (United States)

    Wolf, M.; Noel, G. T.; Stirn, R. J.

    1976-01-01

    A theoretical analysis is presented of certain peculiarities of the current-voltage characteristics of silicon solar cells, involving high values of the empirical constant A in the diode equation for a p-n junction. An attempt was made in a lab experiment to demonstrate that the saturation current which is associated with the exponential term qV/A2kT of the I-V characteristic, with A2 roughly equal to 2, originates in the space charge region and that it can be increased, as observed on ATS-1 cells, by the introduction of additional defects through low energy proton irradiation. It was shown that the proton irradiation introduces defects into the space charge region which give rise to a recombination current from this region, although the I-V characteristic is, in this case, dominated by an exponential term which has A = 1.

  3. Voltage-regulating constant-current sources in a linear induction accelerator

    International Nuclear Information System (INIS)

    Zhao Juan; Cao Kefeng; Deng Jianjun; Zhu Lijun; Yang Jia; Ye Chao; Huang Bin; Cao Ningxiang; Dong Jinxuan; Zhang Jichang; Yu Zhiguo; Chen Min

    2002-01-01

    Constant-current Sources are one of key units in a linear induction accelerator. The requirements for the sources are to supply stable direct current of high power for the induction coil, be easy to computer-control and highly stable and reliable. Applying the technique of linear current source regulating in series, the primary voltage of the power transformer is regulated through an MJYS-JL-350A type three-phase alterative voltage-regulating module. The output current variation is 300-500 A when the load variation is 0.06-0.1 Ω and the voltage drop of the regulator tube is controlled within 8 V±2V when the variation of mains voltage is in ±10%. Both the current ripple and stability meet the technical requirements. The constant-current sources are controlled through an industrial controller. For each of the constant-current sources has a smallest system comprised of 8051 which is communication-controlled through a RS-485 interface, the sources can be controlled remotely

  4. Ultra Low Voltage Class AB Switched Current Memory Cells Based on Floating Gate Transistors

    DEFF Research Database (Denmark)

    Mucha, Igor

    1999-01-01

    current memory cells were designed using a CMOS process with threshold voltages V-T0n = \\V-T0p\\ = 0.9 V for the n- and p-channel devices. Both hand calculations and PSPICE simulations showed that the designed example switched current memory cell allowed a maximum signal range better than +/-18 mu......A proposal for a class AB switched current memory cell, suitable for ultra-low-voltage applications is presented. The proposal employs transistors with floating gates, allowing to build analog building blocks for ultralow supply voltage operation also in CMOS processes with high threshold voltages....... This paper presents the theoretical basis for the design of "floating-gate'' switched current memory cells by giving a detailed description and analysis of the most important impacts degrading the performance of the cells. To support the theoretical assumptions circuits based on "floating-gate'' switched...

  5. Maximum permissible voltage of YBCO coated conductors

    Energy Technology Data Exchange (ETDEWEB)

    Wen, J.; Lin, B.; Sheng, J.; Xu, J.; Jin, Z. [Department of Electrical Engineering, Shanghai Jiao Tong University, Shanghai (China); Hong, Z., E-mail: zhiyong.hong@sjtu.edu.cn [Department of Electrical Engineering, Shanghai Jiao Tong University, Shanghai (China); Wang, D.; Zhou, H.; Shen, X.; Shen, C. [Qingpu Power Supply Company, State Grid Shanghai Municipal Electric Power Company, Shanghai (China)

    2014-06-15

    Highlights: • We examine three kinds of tapes’ maximum permissible voltage. • We examine the relationship between quenching duration and maximum permissible voltage. • Continuous I{sub c} degradations under repetitive quenching where tapes reaching maximum permissible voltage. • The relationship between maximum permissible voltage and resistance, temperature. - Abstract: Superconducting fault current limiter (SFCL) could reduce short circuit currents in electrical power system. One of the most important thing in developing SFCL is to find out the maximum permissible voltage of each limiting element. The maximum permissible voltage is defined as the maximum voltage per unit length at which the YBCO coated conductors (CC) do not suffer from critical current (I{sub c}) degradation or burnout. In this research, the time of quenching process is changed and voltage is raised until the I{sub c} degradation or burnout happens. YBCO coated conductors test in the experiment are from American superconductor (AMSC) and Shanghai Jiao Tong University (SJTU). Along with the quenching duration increasing, the maximum permissible voltage of CC decreases. When quenching duration is 100 ms, the maximum permissible of SJTU CC, 12 mm AMSC CC and 4 mm AMSC CC are 0.72 V/cm, 0.52 V/cm and 1.2 V/cm respectively. Based on the results of samples, the whole length of CCs used in the design of a SFCL can be determined.

  6. Magnetic field cycling effect on the non-linear current-voltage characteristics and magnetic field induced negative differential resistance in α-Fe1.64Ga0.36O3 oxide

    Directory of Open Access Journals (Sweden)

    R. N. Bhowmik

    2015-06-01

    Full Text Available We have studied current-voltage (I-V characteristics of α-Fe1.64Ga0.36O3, a typical canted ferromagnetic semiconductor. The sample showed a transformation of the I-V curves from linear to non-linear character with the increase of bias voltage. The I-V curves showed irreversible features with hysteresis loop and bi-stable electronic states for up and down modes of voltage sweep. We report positive magnetoresistance and magnetic field induced negative differential resistance as the first time observed phenomena in metal doped hematite system. The magnitudes of critical voltage at which I-V curve showed peak and corresponding peak current are affected by magnetic field cycling. The shift of the peak voltage with magnetic field showed a step-wise jump between two discrete voltage levels with least gap (ΔVP 0.345(± 0.001 V. The magnetic spin dependent electronic charge transport in this new class of magnetic semiconductor opens a wide scope for tuning large electroresistance (∼500-700%, magnetoresistance (70-135 % and charge-spin dependent conductivity under suitable control of electric and magnetic fields. The electric and magnetic field controlled charge-spin transport is interesting for applications of the magnetic materials in spintronics, e.g., magnetic sensor, memory devices and digital switching.

  7. Magnetic field cycling effect on the non-linear current-voltage characteristics and magnetic field induced negative differential resistance in α-Fe1.64Ga0.36O3 oxide

    Science.gov (United States)

    Bhowmik, R. N.; Vijayasri, G.

    2015-06-01

    We have studied current-voltage (I-V) characteristics of α-Fe1.64Ga0.36O3, a typical canted ferromagnetic semiconductor. The sample showed a transformation of the I-V curves from linear to non-linear character with the increase of bias voltage. The I-V curves showed irreversible features with hysteresis loop and bi-stable electronic states for up and down modes of voltage sweep. We report positive magnetoresistance and magnetic field induced negative differential resistance as the first time observed phenomena in metal doped hematite system. The magnitudes of critical voltage at which I-V curve showed peak and corresponding peak current are affected by magnetic field cycling. The shift of the peak voltage with magnetic field showed a step-wise jump between two discrete voltage levels with least gap (ΔVP) 0.345(± 0.001) V. The magnetic spin dependent electronic charge transport in this new class of magnetic semiconductor opens a wide scope for tuning large electroresistance (˜500-700%), magnetoresistance (70-135 %) and charge-spin dependent conductivity under suitable control of electric and magnetic fields. The electric and magnetic field controlled charge-spin transport is interesting for applications of the magnetic materials in spintronics, e.g., magnetic sensor, memory devices and digital switching.

  8. Parameter design and performance simulation of a 10 kV voltage compensation type active superconducting fault current limiter

    International Nuclear Information System (INIS)

    Chen, L.; Tang, Y.J.; Song, M.; Shi, J.; Ren, L.

    2013-01-01

    Highlights: •For a practical 10 kV system, the 10 kV active SFCL’s basic parameters are designed. •Under different fault conditions, the 10 kV active SFCL’s performances are simulated. •The designed 10 kV active SFCL’s engineering feasibility is discussed preliminarily. -- Abstract: Since the introduction of superconducting fault current limiter (SFCL) into electrical distribution system may be a good choice with economy and practicability, the parameter design and current-limiting characteristics of a 10 kV voltage compensation type active SFCL are studied in this paper. Firstly, the SFCL’s circuit structure and operation principle are presented. Then, taking a practical 10 kV distribution system as its application object, the SFCL’s basic parameters are designed to meet the system requirements. Further, using MATLAB, the detailed current-limiting performances of the 10 kV active SFCL are simulated under different fault conditions. The simulation results show that the active SFCL can deal well with the faults, and the parameter design’s suitability can be testified. At the end, in view of the engineering feasibility of the 10 kV active SFCL, some preliminary discussions are carried out

  9. Current-voltage curve of sodium channels and concentration dependence of sodium permeability in frog skin

    DEFF Research Database (Denmark)

    Fuchs, W; Larsen, Erik Hviid; Lindemann, B

    1977-01-01

    1. The inward facing membranes of in vitro frog skin epithelium were depolarized with solutions of high K concentration. The electrical properties of the epithelium are then expected to be governed by the outward facing, Na-selective membrane.2. In this state, the transepithelial voltage (V...... was recorded. This procedure was repeated after blocking the Na channels with amiloride to obtain the current-voltage curve of transmembrane and paracellular shunt pathways. The current-voltage curve of the Na channels was computed by subtracting the shunt current from the total current.4. The instantaneous I...... of the inward facing membranes but reflects the true behaviour of P(Na).6. The steady-state P(Na) at a given (Na)(o) is smaller than the transient P(Na) observed right after a stepwise increase of (Na)(o) to this value. The time constant of P(Na)-relaxation is in the order of seconds.7. In conclusion, Na...

  10. Power series fitting of current-voltage characteristics of Al doped ZnO thin film-Sb doped (Ba{sub 0.8}Sr{sub 0.2})TiO{sub 3} heterojunction diode

    Energy Technology Data Exchange (ETDEWEB)

    Sirikulrat, N., E-mail: scphi003@chiangmai.ac.th

    2012-02-29

    The current-voltage (I-V) relationship of aluminum doped zinc oxide thin film-antimony doped barium strontium titanate single heterojunction diodes was investigated. The linear I-V characteristics are similar to those of the PN junction diodes. The linear conduction at a low forward bias voltage as predicted by the space charge limited current theory and the trap free square law at a higher forward voltage are observed. The overall current density-voltage (J-V) characteristics of the diodes are found to be well described by the Power Series Equation J= N-Ary-Summation {sub m}C{sub m}V{sup m} where C{sub m} is the leakage constant at particular power m with the best fit for the power m found to be at the fourth and fifth orders for the forward and reverse bias respectively. - Highlights: Black-Right-Pointing-Pointer The n-n isotype heterojunction diodes of ceramic oxide semiconductors were prepared. Black-Right-Pointing-Pointer The current density-voltage (J-V) curves were analyzed using the Power Series (PS). Black-Right-Pointing-Pointer The J-V characteristics were found to be well described with PS at low order. Black-Right-Pointing-Pointer The thermionic emission and diode leakage currents were comparatively discussed.

  11. Single-InN-Nanowire Nanogenerator with Upto 1 V Output Voltage

    KAUST Repository

    Huang, Chi-Te

    2010-07-30

    Piezoelectric potential of a InN nanowire (NW) growing along [011̄0] can be positive, negative, and zero depending on the direction of the applied transverse force. By measuring the output voltage of a InN-NW-based nanogenerator, about 40% to 55% of output voltages are within the range of ?1 and ?20 mV, and 25% to 30% of output voltages would exceed ?100 mV. Some output voltages could reach the magnitude of ?1000 mV, showing its great potential for fabricating high-output nanogenerators. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  12. Voltages and electric currents mensuration - class 15 kV - for systems electro-optical and magneto-optical; Medicao de tensoes e correntes - classe 15 kv - por sistemas eletro-opticos e magneto-opticos

    Energy Technology Data Exchange (ETDEWEB)

    Costa, Marcos Rodrigues

    1996-07-01

    The technical feasibility of the development of a novel system measuring of high voltage and current in 15 kV distribution lines was presented. The system is basically the combination of two other systems, one conventional and other electro-optical. The conventional subsystem is based on voltage dividers and magnetic rings while the electro-optical subsystem uses LEDs, resistors, optical-fibers and photodetectors. The system was completely tested in laboratory and its main characteristics are low price, easy of installation and flexibility. Two software for data acquisition by GPIB and A/D boards were also developed. The can provide reports on voltages, currents, power and phase-power. (author)

  13. Hyperpolarization-activated current (I(h)) in vestibular calyx terminals: characterization and role in shaping postsynaptic events.

    Science.gov (United States)

    Meredith, Frances L; Benke, Tim A; Rennie, Katherine J

    2012-12-01

    Calyx afferent terminals engulf the basolateral region of type I vestibular hair cells, and synaptic transmission across the vestibular type I hair cell/calyx is not well understood. Calyces express several ionic conductances, which may shape postsynaptic potentials. These include previously described tetrodotoxin-sensitive inward Na(+) currents, voltage-dependent outward K(+) currents and a K(Ca) current. Here, we characterize an inwardly rectifying conductance in gerbil semicircular canal calyx terminals (postnatal days 3-45), sensitive to voltage and to cyclic nucleotides. Using whole-cell patch clamp, we recorded from isolated calyx terminals still attached to their type I hair cells. A slowly activating, noninactivating current (I(h)) was seen with hyperpolarizing voltage steps negative to the resting potential. External Cs(+) (1-5 mM) and ZD7288 (100 μM) blocked the inward current by 97 and 83 %, respectively, confirming that I(h) was carried by hyperpolarization-activated, cyclic nucleotide gated channels. Mean half-activation voltage of I(h) was -123 mV, which shifted to -114 mV in the presence of cAMP. Activation of I(h) was well described with a third order exponential fit to the current (mean time constant of activation, τ, was 190 ms at -139 mV). Activation speeded up significantly (τ=136 and 127 ms, respectively) when intracellular cAMP and cGMP were present, suggesting that in vivo I(h) could be subject to efferent modulation via cyclic nucleotide-dependent mechanisms. In current clamp, hyperpolarizing current steps produced a time-dependent depolarizing sag followed by either a rebound afterdepolarization or an action potential. Spontaneous excitatory postsynaptic potentials (EPSPs) became larger and wider when I(h) was blocked with ZD7288. In a three-dimensional mathematical model of the calyx terminal based on Hodgkin-Huxley type ionic conductances, removal of I(h) similarly increased the EPSP, whereas cAMP slightly decreased simulated EPSP size

  14. Oscillation of Critical Current by Gate Voltage in Cooper Pair Transistor

    International Nuclear Information System (INIS)

    Kim, N.; Cheong, Y.; Song, W.

    2010-01-01

    We measured the critical current of a Cooper pair transistor consisting of two Josephson junctions and a gate electrode. The Cooper pair transistors were fabricated by using electron-beam lithography and double-angle evaporation technique. The Gate voltage dependence of critical current was measured by observing voltage jumps at various gate voltages while sweeping bias current. The observed oscillation was 2e-periodic, which shows the Cooper pair transistor had low level of quasiparticle poisoning.

  15. Comparison between steady-state and dynamic I-V measurements from a single-cell thermionic fuel element

    International Nuclear Information System (INIS)

    Wernsman, Bernard

    1997-01-01

    A comparison between steady-state and dynamic I-V measurements from a single-cell thermionic fuel element (TFE) is made. The single-cell TFE used in this study is the prototype for the 40 kW e space nuclear power system that is similar to the 6 kW e TOPAZ-II. The steady-state I-V measurements influence the emitter temperature due to electron cooling. Therefore, to eliminate the steady-state I-V measurement influence on the TFE and provide a better understanding of the behavior of the thermionic energy converter and TFE characteristics, dynamic I-V measurements are made. The dynamic I-V measurements are made at various input power levels, cesium pressures, collector temperatures, and steady-state current levels. From these measurements, it is shown that the dynamic I-V's do not change the TFE characteristics at a given operating point. Also, the evaluation of the collector work function from the dynamic I-V measurements shows that the collector optimization is not due to a minimum in the collector work function but due to an emission optimization. Since the dynamic I-V measurements do not influence the TFE characteristics, it is believed that these measurements can be done at a system level to understand the influence of TFE placement in the reactor as a function of the core thermal distribution

  16. Dragon-I injector based on the induction voltage adder technique

    Directory of Open Access Journals (Sweden)

    Zhang Kaizhi

    2006-08-01

    Full Text Available The Dragon-I injector based on the induction voltage adder technique is introduced. Twelve ferrite loaded induction cells are connected in a series through central conducting stalks to achieve a pulsed voltage higher than 3.5 MV across the diode. Electrons are extracted from the velvet emitter and guided through the anode pipe by the magnets placed inside the cathode and anode shrouds. Measurements at the exit of injector show that, with an electric field of 200  kV/cm near the velvet surface and suitable magnetic field distribution, an electron beam up to 2.8 kA can be obtained with a normalized emittance of 1040π   mm mrad, and energy spread of 2.1% (3σ around the central energy of 3.5 MeV.

  17. Dynamic neutral beam current and voltage control to improve beam efficacy in tokamaks

    Science.gov (United States)

    Pace, D. C.; Austin, M. E.; Bardoczi, L.; Collins, C. S.; Crowley, B.; Davis, E.; Du, X.; Ferron, J.; Grierson, B. A.; Heidbrink, W. W.; Holcomb, C. T.; McKee, G. R.; Pawley, C.; Petty, C. C.; Podestà, M.; Rauch, J.; Scoville, J. T.; Spong, D. A.; Thome, K. E.; Van Zeeland, M. A.; Varela, J.; Victor, B.

    2018-05-01

    An engineering upgrade to the neutral beam system at the DIII-D tokamak [J. L. Luxon, Nucl. Fusion 42, 614 (2002)] enables time-dependent programming of the beam voltage and current. Initial application of this capability involves pre-programmed beam voltage and current injected into plasmas that are known to be susceptible to instabilities that are driven by energetic ( E ≥ 40 keV) beam ions. These instabilities, here all Alfvén eigenmodes (AEs), increase the transport of the beam ions beyond a classical expectation based on particle drifts and collisions. Injecting neutral beam power, P beam ≥ 2 MW, at reduced voltage with increased current reduces the drive for Alfvénic instabilities and results in improved ion confinement. In lower-confinement plasmas, this technique is applied to eliminate the presence of AEs across the mid-radius of the plasmas. Simulations of those plasmas indicate that the mode drive is decreased and the radial extent of the remaining modes is reduced compared to a higher beam voltage case. In higher-confinement plasmas, this technique reduces AE activity in the far edge and results in an interesting scenario of beam current drive improving as the beam voltage reduces from 80 kV to 65 kV.

  18. Passive measurement of flux nucleation in the current-induced resistive state of type I superconductors

    International Nuclear Information System (INIS)

    Selig, K.P.; Chimenti, D.E.; Huebener, R.P.

    1978-01-01

    Flux-tube nucleation rates have been measured in the current-induced resistive state of type I superconducting In films between 1.5 and 2.0 K by a completely passive technique. Indication of periodic nucleation is observed only in narrow regions of sample voltage drop, whose position is a sensitive function of temperature. Frequency bandwidth measurements of the nucleation rate yield a spectral purity of one part in 10 4 within the narrow regions where an experimental signal can be detected. (orig.) [de

  19. Voltage current characteristics of type III superconductors

    International Nuclear Information System (INIS)

    Dorofejev, G.L.; Imenitov, A.B.; Klimenko, E.Y.

    1980-01-01

    An adequate description of voltage-current characteristics is important in order to understand the nature of high critical current for the electrodynamic construction of type-III superconductors and for commercial superconductor specification. Homogeneous monofilament and multifilament Nb-Ti, Nb-Zr,Nb 3 Sn wires were investigated in different ranges of magnetic field, temperature and current. The shape of the voltage-current characteristics of multifilament wires, and the parameter's dependence on temperature and magnetic field may be explained qualitatively by the longitudinal heterogeneous nature of the filaments. A method of attaining the complete specification of the wire's electro-physical properties is proposed. It includes the traditional description of a critical surface (i.e. the surface corresponding to a certain conventional effective resistivity in T,B,J-space) and a description of any increasing parameter that depends on B and T. (author)

  20. Voltage current characteristics of type III superconductors

    Energy Technology Data Exchange (ETDEWEB)

    Dorofeiev, G L; Imenitov, A B; Klimenko, E Y [Gosudarstvennyi Komitet po Ispol' zovaniyu Atomnoi Ehnergii SSSR, Moscow. Inst. Atomnoi Ehnergii

    1980-06-01

    An adequate description of voltage-current characteristics is important in order to understand the nature of high critical current for the electrodynamic construction of type-III superconductors and for commercial superconductor specification. Homogeneous monofilament and multifilament Nb-Ti, Nb-Zr,Nb/sub 3/Sn wires were investigated in different ranges of magnetic field, temperature and current. The shape of the voltage-current characteristics of multifilament wires, and the parameter's dependence on temperature and magnetic field may be explained qualitatively by the longitudinal heterogeneous nature of the filaments. A method of attaining the complete specification of the wire's electro-physical properties is proposed. It includes the traditional description of a critical surface (i.e. the surface corresponding to a certain conventional effective resistivity in T,B,J-space) and a description of any increasing parameter that depends on B and T.

  1. High Voltage Coil Current Sensor for DC-DC Converters Employing DDCC

    Directory of Open Access Journals (Sweden)

    M. Drinovsky

    2015-12-01

    Full Text Available Current sensor is an integral part of every switching converter. It is used for over-current protection, regulation and in case of multiphase converters for balancing. A new high voltage current sensor for coil-based current sensing in DC-DC converters is presented. The sensor employs DDCC with high voltage input stage and gain trimming. The circuit has been simulated and implemented in 0.35 um BCD technology as part of a multiphase DC-DC converter where its function has been verified. The circuit is able to sustain common mode voltage on the input up to 40 V, it occupies 0.387*0.345 mm2 and consumes 3.2 mW typically.

  2. The I-V Measurement System for Solar Cells Based on MCU

    International Nuclear Information System (INIS)

    Chen Fengxiang; Ai Yu; Wang Jiafu; Wang Lisheng

    2011-01-01

    In this paper, an I-V measurement system for solar cells based on Single-chip Microcomputer (MCU) is presented. According to the test principles of solar cells, this measurement system mainly comprises of two parts-data collecting, data processing and displaying. The MCU mainly used as to acquire data, then the collecting results is sent to the computer by serial port. The I-V measurement results of our test system are shown in the human-computer interaction interface based on our hardware circuit. By comparing the test results of our I-V tester and the results of other commercial I-V tester, we found errors for most parameters are less than 5%, which shows our I-V test result is reliable. Because the MCU can be applied in many fields, this I-V measurement system offers a simple prototype for portable I-V tester for solar cells.

  3. The I-V Measurement System for Solar Cells Based on MCU

    Energy Technology Data Exchange (ETDEWEB)

    Chen Fengxiang; Ai Yu; Wang Jiafu; Wang Lisheng, E-mail: phonixchen79@yahoo.com.cn [Department of physics science and technology, Wuhan University of Technology, Wuhan city, Hubei Province, 430070 (China)

    2011-02-01

    In this paper, an I-V measurement system for solar cells based on Single-chip Microcomputer (MCU) is presented. According to the test principles of solar cells, this measurement system mainly comprises of two parts-data collecting, data processing and displaying. The MCU mainly used as to acquire data, then the collecting results is sent to the computer by serial port. The I-V measurement results of our test system are shown in the human-computer interaction interface based on our hardware circuit. By comparing the test results of our I-V tester and the results of other commercial I-V tester, we found errors for most parameters are less than 5%, which shows our I-V test result is reliable. Because the MCU can be applied in many fields, this I-V measurement system offers a simple prototype for portable I-V tester for solar cells.

  4. 250 kV 6 mA compact Cockcroft-Walton high-voltage power supply

    Energy Technology Data Exchange (ETDEWEB)

    Ma, Zhan-Wen; Su, Xiao-Dong; Wei, Zhen; Huang, Zhi-Wu; Miao, Tian-You; Su, Tong-Ling [School of Nuclear Science and Technology, Lanzhou University, Lanzhou 730000 (China); Lu, Xiao-Long; Wang, Jun-Run; Yao, Ze-En, E-mail: zeyao@lzu.edu.cn [School of Nuclear Science and Technology, Lanzhou University, Lanzhou 730000 (China); Engineering Research Center for Neutron Application, Ministry of Education, Lanzhou University, Lanzhou 730000 (China)

    2016-08-15

    A compact power supply system for a compact neutron generator has been developed. A 4-stage symmetrical Cockcroft-Walton circuit is adopted to produce 250 kV direct current high-voltage. A 2-stage 280 kV isolation transformer system is used to drive the ion source power supply. For a compact structure, safety, and reliability during the operation, the Cockcroft-Walton circuit and the isolation transformer system are enclosed in an epoxy vessel containing the transformer oil whose size is about ∅350 mm × 766 mm. Test results indicate that the maximum output voltage of the power supply is 282 kV, and the stability of the output voltage is better than 0.63% when the high voltage power supply is operated at 250 kV, 6.9 mA with the input voltage varying ±10%.

  5. The i-V curve characteristics of burner-stabilized premixed flames: detailed and reduced models

    KAUST Repository

    Han, Jie

    2016-07-17

    The i-V curve describes the current drawn from a flame as a function of the voltage difference applied across the reaction zone. Since combustion diagnostics and flame control strategies based on electric fields depend on the amount of current drawn from flames, there is significant interest in modeling and understanding i-V curves. We implement and apply a detailed model for the simulation of the production and transport of ions and electrons in one-dimensional premixed flames. An analytical reduced model is developed based on the detailed one, and analytical expressions are used to gain insight into the characteristics of the i-Vcurve for various flame configurations. In order for the reduced model to capture the spatial distribution of the electric field accurately, the concept of a dead zone region, where voltage is constant, is introduced, and a suitable closure for the spatial extent of the dead zone is proposed and validated. The results from the reduced modeling framework are found to be in good agreement with those from the detailed simulations. The saturation voltage is found to depend significantly on the flame location relative to the electrodes, and on the sign of the voltage difference applied. Furthermore, at sub-saturation conditions, the current is shown to increase linearly or quadratically with the applied voltage, depending on the flame location. These limiting behaviors exhibited by the reduced model elucidate the features of i-V curves observed experimentally. The reduced model relies on the existence of a thin layer where charges are produced, corresponding to the reaction zone of a flame. Consequently, the analytical model we propose is not limited to the study of premixed flames, and may be applied easily to others configurations, e.g.~nonpremixed counterflow flames.

  6. I-V Characteristics of a Static Random Access Memory Cell Utilizing Ferroelectric Transistors

    Science.gov (United States)

    Laws, Crystal; Mitchell, Cody; Hunt, Mitchell; Ho, Fat D.; MacLeod, Todd C.

    2012-01-01

    I-V characteristics for FeFET different than that of MOSFET Ferroelectric layer features hysteresis trend whereas MOSFET behaves same for both increasing and decreasing VGS FeFET I-V characteristics doesn't show dependence on VDS A Transistor with different channel length and width as well as various resistance and input voltages give different results As resistance values increased, the magnitude of the drain current decreased.

  7. Fault identification in crystalline silicon PV modules by complementary analysis of the light and dark current-voltage characteristics

    DEFF Research Database (Denmark)

    Spataru, Sergiu; Sera, Dezso; Hacke, Peter

    2016-01-01

    This article proposes a fault identification method, based on the complementary analysis of the light and dark current-voltage (I-V) characteristics of the photovoltaic (PV) module, to distinguish between four important degradation modes that lead to power loss in PV modules: (a) degradation of t...

  8. Slow voltage oscillations in Ag-doped superconducting Y-Ba-Cu-O

    International Nuclear Information System (INIS)

    Altinkok, A.; Yetis, H.; Kilic, K.; Kilic, A.; Olutas, M.

    2008-01-01

    The time effects in Ag-doped YBa 2 Cu 3 O 7-x sample (YBCO/Ag) were examined by means of transport relaxation measurements (V-t curves). At well-defined values of transport current (I), temperature (T) and external magnetic field (H), an abrupt rise in sample voltage was observed at the early stage of the relaxation process. After reducing the initial current to a finite value, the sample voltage levels off within a very short time. The rapid voltage drops seen in V-t curves were attributed to the rapid dynamic reorganization of flux lines traversing the sample edges. These observations were also interpreted as an indication of doping of YBCO with Ag and easy suppression of superconducting order parameter due to the presence of Ag. In addition, we investigated the influence of bidirectional square wave (BSW) current on the evolution of V-t curves at different temperatures and external magnetic fields. It was observed that a nonlinear response seen in V-t curves to BSW current with sufficiently short periods or sufficiently low amplitude reflects itself as regular sinusoidal- type voltage oscillations, which were discussed mainly in terms of the dynamic competition between pinning and depinning

  9. Magnetic field cycling effect on the non-linear current-voltage characteristics and magnetic field induced negative differential resistance in α-Fe{sub 1.64}Ga{sub 0.36}O{sub 3} oxide

    Energy Technology Data Exchange (ETDEWEB)

    Bhowmik, R. N., E-mail: rnbhowmik.phy@pondiuni.edu.in; Vijayasri, G. [Department of Physics, Pondicherry University, R.Venkataraman Nagar, Kalapet, Puducherry - 605 014 (India)

    2015-06-15

    We have studied current-voltage (I-V) characteristics of α-Fe{sub 1.64}Ga{sub 0.36}O{sub 3}, a typical canted ferromagnetic semiconductor. The sample showed a transformation of the I-V curves from linear to non-linear character with the increase of bias voltage. The I-V curves showed irreversible features with hysteresis loop and bi-stable electronic states for up and down modes of voltage sweep. We report positive magnetoresistance and magnetic field induced negative differential resistance as the first time observed phenomena in metal doped hematite system. The magnitudes of critical voltage at which I-V curve showed peak and corresponding peak current are affected by magnetic field cycling. The shift of the peak voltage with magnetic field showed a step-wise jump between two discrete voltage levels with least gap (ΔV{sub P}) 0.345(± 0.001) V. The magnetic spin dependent electronic charge transport in this new class of magnetic semiconductor opens a wide scope for tuning large electroresistance (∼500-700%), magnetoresistance (70-135 %) and charge-spin dependent conductivity under suitable control of electric and magnetic fields. The electric and magnetic field controlled charge-spin transport is interesting for applications of the magnetic materials in spintronics, e.g., magnetic sensor, memory devices and digital switching.

  10. Development and function of the voltage-gated sodium current in immature mammalian cochlear inner hair cells.

    Directory of Open Access Journals (Sweden)

    Tobias Eckrich

    Full Text Available Inner hair cells (IHCs, the primary sensory receptors of the mammalian cochlea, fire spontaneous Ca(2+ action potentials before the onset of hearing. Although this firing activity is mainly sustained by a depolarizing L-type (Ca(V1.3 Ca(2+ current (I(Ca, IHCs also transiently express a large Na(+ current (I(Na. We aimed to investigate the specific contribution of I(Na to the action potentials, the nature of the channels carrying the current and whether the biophysical properties of I(Na differ between low- and high-frequency IHCs. We show that I(Na is highly temperature-dependent and activates at around -60 mV, close to the action potential threshold. Its size was larger in apical than in basal IHCs and between 5% and 20% should be available at around the resting membrane potential (-55 mV/-60 mV. However, in vivo the availability of I(Na could potentially increase to >60% during inhibitory postsynaptic potential activity, which transiently hyperpolarize IHCs down to as far as -70 mV. When IHCs were held at -60 mV and I(Na elicited using a simulated action potential as a voltage command, we found that I(Na contributed to the subthreshold depolarization and upstroke of an action potential. We also found that I(Na is likely to be carried by the TTX-sensitive channel subunits Na(V1.1 and Na(V1.6 in both apical and basal IHCs. The results provide insight into how the biophysical properties of I(Na in mammalian cochlear IHCs could contribute to the spontaneous physiological activity during cochlear maturation in vivo.

  11. I-V Curves from Photovoltaic Modules Deployed in Tucson

    Science.gov (United States)

    Kopp, Emily; Brooks, Adria; Lonij, Vincent; Cronin, Alex

    2011-10-01

    More than 30 Mega Watts of photo-voltaic (PV) modules are connected to the electric power grid in Tucson, AZ. However, predictions of PV system electrical yields are uncertain, in part because PV modules degrade at various rates (observed typically in the range 0% to 3 %/yr). We present I-V curves (PV output current as a function of PV output voltage) as a means to study PV module efficiency, de-ratings, and degradation. A student-made I-V curve tracer for 100-Watt modules will be described. We present I-V curves for several different PV technologies operated at an outdoor test yard, and we compare new modules to modules that have been operated in the field for 10 years.

  12. A novel NaV1.5 voltage sensor mutation associated with severe atrial and ventricular arrhythmias.

    Science.gov (United States)

    Wang, Hong-Gang; Zhu, Wandi; Kanter, Ronald J; Silva, Jonathan R; Honeywell, Christina; Gow, Robert M; Pitt, Geoffrey S

    2016-03-01

    Inherited autosomal dominant mutations in cardiac sodium channels (NaV1.5) cause various arrhythmias, such as long QT syndrome and Brugada syndrome. Although dozens of mutations throughout the protein have been reported, there are few reported mutations within a voltage sensor S4 transmembrane segment and few that are homozygous. Here we report analysis of a novel lidocaine-sensitive recessive mutation, p.R1309H, in the NaV1.5 DIII/S4 voltage sensor in a patient with a complex arrhythmia syndrome. We expressed the wild type or mutant NaV1.5 heterologously for analysis with the patch-clamp and voltage clamp fluorometry (VCF) techniques. p.R1309H depolarized the voltage-dependence of activation, hyperpolarized the voltage-dependence of inactivation, and slowed recovery from inactivation, thereby reducing the channel availability at physiologic membrane potentials. Additionally, p.R1309H increased the "late" Na(+) current. The location of the mutation in DIIIS4 prompted testing for a gating pore current. We observed an inward current at hyperpolarizing voltages that likely exacerbates the loss-of-function defects at resting membrane potentials. Lidocaine reduced the gating pore current. The p.R1309H homozygous NaV1.5 mutation conferred both gain-of-function and loss-of-function effects on NaV1.5 channel activity. Reduction of a mutation-induced gating pore current by lidocaine suggested a therapeutic mechanism. Copyright © 2016 Elsevier Ltd. All rights reserved.

  13. Compact generator with semiconductor current interrupter, voltage to 300 kV and pulse repetition rate to 2 kHz

    International Nuclear Information System (INIS)

    Lyubutin, S.K.; Rukin, S.N.; Slovikovskij, B.G.

    2000-01-01

    Compact generator with a semiconductor current interrupter (SOS-diode), forming on the resistive load pulses with the amplitude up to 300 kV, duration from 30 up to 50 ns and the pulse sequence frequency 300 Hz by long operation and up to 2 kHz in the 30-second packet, is described. The generator contains a thyristor charge unit, magnetic compressor and inductive storage with a semiconductor current interrupter on the SOS-diode basis. The generator mean output capacity by the pulse maximum sequence frequency and 250 kV voltage equals 16 kw. The generator dimensions are 0.85 x 0.65 x 0.42 m, its mass equals approximately 115 kg [ru

  14. Influence of current limitation on voltage stability with voltage sourced converter HVDC

    DEFF Research Database (Denmark)

    Zeni, Lorenzo; Jóhannsson, Hjörtur; Hansen, Anca Daniela

    2013-01-01

    A first study of voltage stability with relevant amount of Voltage Sourced Converter based High Voltage Direct Current (VSC-HVDC) transmission is presented, with particular focus on the converters’ behaviour when reaching their rated current. The detrimental effect of entering the current...

  15. Current-voltage curves for molecular junctions computed using all-electron basis sets

    International Nuclear Information System (INIS)

    Bauschlicher, Charles W.; Lawson, John W.

    2006-01-01

    We present current-voltage (I-V) curves computed using all-electron basis sets on the conducting molecule. The all-electron results are very similar to previous results obtained using effective core potentials (ECP). A hybrid integration scheme is used that keeps the all-electron calculations cost competitive with respect to the ECP calculations. By neglecting the coupling of states to the contacts below a fixed energy cutoff, the density matrix for the core electrons can be evaluated analytically. The full density matrix is formed by adding this core contribution to the valence part that is evaluated numerically. Expanding the definition of the core in the all-electron calculations significantly reduces the computational effort and, up to biases of about 2 V, the results are very similar to those obtained using more rigorous approaches. The convergence of the I-V curves and transmission coefficients with respect to basis set is discussed. The addition of diffuse functions is critical in approaching basis set completeness

  16. Ab initio and empirical studies on the asymmetry of molecular current-voltage characteristics

    International Nuclear Information System (INIS)

    Hoft, R C; Armstrong, N; Ford, M J; Cortie, M B

    2007-01-01

    We perform theoretical calculations of the tunnelling current through various small organic molecules sandwiched between gold electrodes by using both a tunnel barrier model and an ab initio transport code. The height of the tunnelling barrier is taken to be the work function of gold as modified by the adsorbed molecule and calculated from an ab initio electronic structure code. The current-voltage characteristics of these molecules are compared. Asymmetry is introduced into the system in two ways: an asymmetric molecule and a gap between the molecule and the right electrode. The latter is a realistic situation in scanning probe experiments. The asymmetry is also realized in the tunnel barrier model by two distinct work functions on the left and right electrodes. Significant asymmetry is observed in the ab initio i(V) curves. The tunnel barrier i(V) curves show much less pronounced asymmetry. The relative sizes of the currents through the molecules are compared. In addition, the performance of the WKB approximation is compared to the results obtained from the exact Schroedinger solution to the tunnelling barrier problem

  17. System for improving measurement accuracy of transducer by measuring transducer temperature and resistance change using thermoelectric voltages

    Science.gov (United States)

    Anderson, Karl F. (Inventor); Parker, Allen R., Jr. (Inventor)

    1993-01-01

    A constant current loop measuring system measures a property including the temperature of a sensor responsive to an external condition being measured. The measuring system includes thermocouple conductors connected to the sensor, sensing first and second induced voltages responsive to the external condition. In addition, the measuring system includes a current generator and reverser generating a constant current, and supplying the constant current to the thermocouple conductors in forward and reverse directions generating first and second measured voltages, and a determining unit receiving the first and second measured voltages from the current generator and reverser, and determining the temperature of the sensor responsive to the first and second measured voltages.

  18. Identification of voltage stability condition of a power system using measurements of bus variables

    Directory of Open Access Journals (Sweden)

    Durlav Hazarika

    2014-12-01

    Full Text Available Several online methods were proposed for investigating the voltage stability condition of an interconnected power system using the measurements of voltage and current phasors at a bus. For this purpose, phasor measurement units (PMUs are used. A PMU is a device which measures the electrical waves on an electrical network, using a common time source (reference bus for synchronisation. This study proposes a method for online monitoring of voltage stability condition of a power system using measurements of bus variables namely – (i real power, (ii reactive power and (iii bus voltage magnitude at a bus. The measurements of real power, reactive power and bus voltage magnitude could be extracted/captured from a smart energy meter. The financial involvement for implementation of the proposed method would significantly lower compared with the PMU-based method.

  19. Low noise constant current source for bias dependent noise measurements

    International Nuclear Information System (INIS)

    Talukdar, D.; Bose, Suvendu; Bardhan, K. K.; Chakraborty, R. K.

    2011-01-01

    A low noise constant current source used for measuring the 1/f noise in disordered systems in ohmic as well as nonohmic regime is described. The source can supply low noise constant current starting from as low as 1 μA to a few tens of milliampere with a high voltage compliance limit of around 20 V. The constant current source has several stages, which can work in a standalone manner or together to supply the desired value of load current. The noise contributed by the current source is very low in the entire current range. The fabrication of a low noise voltage preamplifier modified for bias dependent noise measurements and based on the existing design available in the MAT04 data sheet is also described.

  20. Excessive current in wide superconducting films

    International Nuclear Information System (INIS)

    Volotskaya, V.G.; Sivakov, A.G.; Turutanov, O.G.

    1986-01-01

    The resistive state of a wide long film due to superconductivity destruction by current is studied. The voltage-independent excess current I 0 is observed on I-V curves at high transport currents. The two-dimensional image of the current-carrying sample obtained by laser scanning technique in this current range indicates that the whole film is in the resistive state. The current I 0 is measured as a function of magnetic field and SHF power

  1. Ground potential rise on the high voltage substation during lightning strike measurement and simulation results

    Energy Technology Data Exchange (ETDEWEB)

    Wiater, Jaroslaw [Bialystok Technical University (Poland). Electrical Dept.], E-mail: jaroslawwiater@we.pb.edu.pl

    2007-07-01

    This paper will present a ground potential rise (GPR) measurement results. All measurements were made during normal work of the real high voltage substation and according a special procedure developed for this occasion. This procedure does not influence on the protection relays and ensures a proper work of the substation even for 6 kV surges. During measurements current and voltage surges were produced by the impulse generator - UCS 500M6B. Measurement results are compared to simulation results performed in CDEGS software for the same initial conditions. (author)

  2. The Design of Operational Amplifier for Low Voltage and Low Current Sound Energy Harvesting System

    Science.gov (United States)

    Fang, Liew Hui; Rahim, Rosemizi Bin Abd; Isa, Muzamir; Idris Syed Hassan, Syed; Ismail, Baharuddin Bin

    2018-03-01

    The objective of this paper is to design a combination of an operational amplifier (op-amp) with a rectifier used in an alternate current (ac) to direct current (dc) power conversion. The op-amp was designed to specifically work at low voltage and low current for a sound energy harvesting system. The goal of the op-amp design with adjustable gain was to control output voltage based on the objectives of the experiment conducted. The op-amp was designed for minimum power dissipation performance, with the means of increasing the output current when receiving a large amount of load. The harvesting circuits which designed further improved the power output efficiency by shortening the fully charged time needed by a supercapacitor bank. It can fulfil the long-time power demands for low power device. Typically, a small amount of energy sources were converted to electricity and stored in the supercapacitor bank, which was built by 10 pieces of capacitors with 0.22 F each, arranged in parallel connection. The highest capacitance was chosen based on the characteristic that have the longest discharging time to support the applications of a supercapacitor bank. Testing results show that the op-amp can boost the low input ac voltage (∼3.89 V) to high output dc voltage (5.0 V) with output current of 30 mA and stored the electrical energy in a big supercapacitor bank having a total of 2.2 F, effectively. The measured results agree well with the calculated results.

  3. Observation of dark pulses in 10 nm thick YBCO nanostrips presenting hysteretic current voltage characteristics

    Science.gov (United States)

    Ejrnaes, M.; Parlato, L.; Arpaia, R.; Bauch, T.; Lombardi, F.; Cristiano, R.; Tafuri, F.; Pepe, G. P.

    2017-12-01

    We have fabricated several 10 nm thick and 65 nm wide YBa2Cu3O7-δ (YBCO) nanostrips. The nanostrips with the highest critical current densities are characterized by hysteretic current voltage characteristics (IVCs) with a direct bistable switch from the zero-voltage to the finite voltage state. The presence of hysteretic IVCs allowed the observation of dark pulses due to fluctuations phenomena. The key role of the bistable behavior is its ability to transform a small disturbance (e.g. an intrinsic fluctuation) into a measurable transient signal, i.e. a dark pulse. On the contrary, in devices characterized by lower critical current density values, the IVCs are non-hysteretic and dark pulses have not been observed. To investigate the physical origin of the dark pulses, we have measured the bias current dependence of the dark pulse rate: the observed exponential increase with the bias current is compatible with mechanisms based on thermal activation of magnetic vortices in the nanostrip. We believe that the successful amplification of small fluctuation events into measurable signals in nanostrips of ultrathin YBCO is a milestone for further investigation of YBCO nanostrips for superconducting nanostrip single photon detectors and other quantum detectors for operation at higher temperatures.

  4. Room temperature current-voltage (I-V) characteristics of Ag/InGaN/n-Si Schottky barrier diode

    Energy Technology Data Exchange (ETDEWEB)

    Erdoğan, Erman, E-mail: e.erdogan@alparslan.edu.tr [Department of Physics, Faculty of Art and Science, Muş Alparslan University, Muş 49250 (Turkey); Kundakçı, Mutlu [Department of Physics, Faculty of Science, Atatürk University, Erzurum 25240 (Turkey)

    2017-02-01

    Metal-semiconductors (MSs) or Schottky barrier diodes (SBDs) have a significant potential in the integrated device technology. In the present paper, electrical characterization of Ag/InGaN/n-Si Schottky diode have been systematically carried out by simple Thermionic method (TE) and Norde function based on the I-V characteristics. Ag ohmic and schottky contacts are deposited on InGaN/n-Si film by thermal evaporation technique under a vacuum pressure of 1×10{sup −5} mbar. Ideality factor, barrier height and series resistance values of this diode are determined from I-V curve. These parameters are calculated by TE and Norde methods and findings are given in a comparetive manner. The results show the consistency for both method and also good agreement with other results obtained in the literature. The value of ideality factor and barrier height have been determined to be 2.84 and 0.78 eV at room temperature using simple TE method. The value of barrier height obtained with Norde method is calculated as 0.79 eV.

  5. Room temperature current-voltage (I-V) characteristics of Ag/InGaN/n-Si Schottky barrier diode

    Science.gov (United States)

    Erdoğan, Erman; Kundakçı, Mutlu

    2017-02-01

    Metal-semiconductors (MSs) or Schottky barrier diodes (SBDs) have a significant potential in the integrated device technology. In the present paper, electrical characterization of Ag/InGaN/n-Si Schottky diode have been systematically carried out by simple Thermionic method (TE) and Norde function based on the I-V characteristics. Ag ohmic and schottky contacts are deposited on InGaN/n-Si film by thermal evaporation technique under a vacuum pressure of 1×10-5 mbar. Ideality factor, barrier height and series resistance values of this diode are determined from I-V curve. These parameters are calculated by TE and Norde methods and findings are given in a comparetive manner. The results show the consistency for both method and also good agreement with other results obtained in the literature. The value of ideality factor and barrier height have been determined to be 2.84 and 0.78 eV at room temperature using simple TE method. The value of barrier height obtained with Norde method is calculated as 0.79 eV.

  6. Slow voltage oscillations in Ag-doped superconducting Y-Ba-Cu-O

    Energy Technology Data Exchange (ETDEWEB)

    Altinkok, A. [Abant Izzet Baysal University, Department of Physics, Turgut Gulez Research Laboratory, 14280 Bolu (Turkey)], E-mail: altinkok_a@ibu.edu.tr; Yetis, H.; Kilic, K.; Kilic, A.; Olutas, M. [Abant Izzet Baysal University, Department of Physics, Turgut Gulez Research Laboratory, 14280 Bolu (Turkey)

    2008-09-15

    The time effects in Ag-doped YBa{sub 2}Cu{sub 3}O{sub 7-x} sample (YBCO/Ag) were examined by means of transport relaxation measurements (V-t curves). At well-defined values of transport current (I), temperature (T) and external magnetic field (H), an abrupt rise in sample voltage was observed at the early stage of the relaxation process. After reducing the initial current to a finite value, the sample voltage levels off within a very short time. The rapid voltage drops seen in V-t curves were attributed to the rapid dynamic reorganization of flux lines traversing the sample edges. These observations were also interpreted as an indication of doping of YBCO with Ag and easy suppression of superconducting order parameter due to the presence of Ag. In addition, we investigated the influence of bidirectional square wave (BSW) current on the evolution of V-t curves at different temperatures and external magnetic fields. It was observed that a nonlinear response seen in V-t curves to BSW current with sufficiently short periods or sufficiently low amplitude reflects itself as regular sinusoidal- type voltage oscillations, which were discussed mainly in terms of the dynamic competition between pinning and depinning.

  7. Analysis of current-voltage characteristics of Au/pentacene/fluorine polymer/indium zinc oxide diodes by electric-field-induced optical second-harmonic generation

    Energy Technology Data Exchange (ETDEWEB)

    Nishi, Shohei; Taguchi, Dai; Manaka, Takaaki; Iwamoto, Mitsumasa, E-mail: iwamoto@pe.titech.ac.jp [Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 S3-33, O-okayama, Meguro-ku, Tokyo 152-8552 (Japan)

    2015-06-28

    By using electric-field-induced optical second-harmonic generation measurement coupled with the conventional current-voltage (I-V) measurement, we studied the carrier transport of organic double-layer diodes with a Au/pentacene/fluorine polymer (FP)/indium zinc oxide (IZO) structure. The rectifying I-V characteristics were converted into the I-E characteristics of the FP and pentacene layers. Results suggest a model in which Schottky-type electron injection from the IZO electrode to the FP layer governs the forward electrical conduction (V > 0), where the space charge electric field produced in the FP layer by accumulated holes at the pentacene/FP interface makes a significant contribution. On the other hand, Schottky-type injection by accumulated interface electrons from the pentacene layer to the FP layer governs the backward electrical conduction (V < 0). The electroluminescence generated from the pentacene layer in the region V > 0 verifies the electron transport across the FP layer, and supports the above suggested model.

  8. Analysis of current-voltage characteristics of Au/pentacene/fluorine polymer/indium zinc oxide diodes by electric-field-induced optical second-harmonic generation

    International Nuclear Information System (INIS)

    Nishi, Shohei; Taguchi, Dai; Manaka, Takaaki; Iwamoto, Mitsumasa

    2015-01-01

    By using electric-field-induced optical second-harmonic generation measurement coupled with the conventional current-voltage (I-V) measurement, we studied the carrier transport of organic double-layer diodes with a Au/pentacene/fluorine polymer (FP)/indium zinc oxide (IZO) structure. The rectifying I-V characteristics were converted into the I-E characteristics of the FP and pentacene layers. Results suggest a model in which Schottky-type electron injection from the IZO electrode to the FP layer governs the forward electrical conduction (V > 0), where the space charge electric field produced in the FP layer by accumulated holes at the pentacene/FP interface makes a significant contribution. On the other hand, Schottky-type injection by accumulated interface electrons from the pentacene layer to the FP layer governs the backward electrical conduction (V < 0). The electroluminescence generated from the pentacene layer in the region V > 0 verifies the electron transport across the FP layer, and supports the above suggested model

  9. Influence of tube voltage on CT attenuation, radiation dose, and image quality: phantom study

    International Nuclear Information System (INIS)

    Li Fengtan; Li Dong; Zhang Yunting

    2013-01-01

    Objective: To assess the influence of tube current and tube voltage on the CT attenuation, radiation dose, and image quality. Methods: A total of 113 saline solutions with decreasing dilution of contrast medium (370 mg I/ml) was produced. MDCT scan was performed with 15 series of different settings of tube current and tube voltage. CT attenuations with 15 series of different settings were all measured, and influence of tube current and tube voltage on CT attenuations was analyzed. CT dose index (CTDIvol) was recorded. The CT attenuations with different tube voltage and current were compared with one-way ANOVA and Kruskal-Wallis rank sum test. The correlation of CT attenuation with different tube voltage and the influence of tube voltage and current on radiation dose and image quality were tested by correlation analysis. Results: Tube current (250, 200, 150, 100, and 50 mA) had no significant effect on CT attenuation (F = 0.001, 0.008, 0.075, P > 0.05), while tube voltage (120, 100, and 80 kV) had significant effect (H = 17.906, 17.906, 13.527, 20.124, 23.563, P < 0.05). The correlation between CT attenuation and tube voltage was determined with equation: CT attenuatio N_1_0_0 _k_V = 1.561 × CT attenuatio N_1_2_0 _k_v + 4.0818, CT attenuatio N_8_0 _k_v = 1.2131 × CT attenuatio N_1_2_0 _k_v + 0.9283. The influence of tube voltage on radiation dose and image quality was also analyzed, and equations were also obtained: N_1_2_0 -k_v = -5.9771 Ln (D_1_2_0 kv) + 25.412, N_1_0_0 _k_v = -10.544 Ln (D_1_0_0 _k_v) + 36.262, N_8_0 _k_v = -25.326 Ln (D_8_0 _k_v) + 62.816. According to the results of relationship among CT attenuation, radiation dose, and image quality, lower tube voltage with higher tube current can reduce the radiation dose. Conclusions: Lower tube voltage can reduce the radiation dose. However, CT attenuation was influenced, and correction should be done with the equations. (authors)

  10. A 5 V-to-3.3 V CMOS Linear Regulator with Three-Output Temperature-Independent Reference Voltages

    Directory of Open Access Journals (Sweden)

    San-Fu Wang

    2016-01-01

    Full Text Available This paper presents a 5 V-to-3.3 V linear regulator circuit, which uses 3.3 V CMOS transistors to replace the 5 V CMOS transistors. Thus, the complexity of the manufacturing semiconductor process can be improved. The proposed linear regulator is implemented by cascode architecture, which requires three different reference voltages as the bias voltages of its circuit. Thus, the three-output temperature-independent reference voltage circuit is proposed, which provides three accurate reference voltages simultaneously. The three-output temperature-independent reference voltages also can be used in other circuits of the chip. By using the proposed temperature-independent reference voltages, the proposed linear regulator can provide an accurate output voltage, and it is suitable for low cost, small size, and highly integrated system-on-chip (SoC applications. Moreover, the proposed linear regulator uses the cascode technique, which improves both the gain performance and the isolation performance. Therefore, the proposed linear regulator has a good performance in reference voltage to output voltage isolation. The voltage variation of the linear regulator is less than 2.153% in the temperature range of −40°C–120°C, and the power supply rejection ratio (PSRR is less than −42.8 dB at 60 Hz. The regulator can support 0~200 mA output current. The core area is less than 0.16 mm2.

  11. Current and future possibilities of V2V and I2V technologies: an analysis directed toward Augmented Reality systems

    Science.gov (United States)

    Betancur, J. A.; Osorio-Gómez, Gilberto; Arnedo, Aida; Yarce Botero, Andrés.

    2014-06-01

    Nowadays, it is very important to explore the qualitative characteristics of autonomous mobility systems in automobiles, especially disruptive technology like Vehicle to Vehicle (V2V) and Infrastructure to Vehicle (I2V), in order to comprehend how the next generation of automobiles will be developed. In this sense, this research covers a general review about active safety in automobiles where V2V and I2V systems have been implemented; identifying the more realistic possibilities related to V2V and I2V technology and analyzing the current applications, some systems in development process and some future conceptual proposals. Mainly, it is notorious the potential development of mixing V2V and I2V systems pointing to increase the driver's attention; therefore, a configuration between these two technologies and some augmented reality system for automobiles (Head-Up Display and Head-Down Display) is proposed. There is a huge potential of implementation for this kind of configuration once the normative and the roadmap for its development can be widely established.

  12. Na+ currents in vestibular type I and type II hair cells of the embryo and adult chicken.

    Science.gov (United States)

    Masetto, S; Bosica, M; Correia, M J; Ottersen, O P; Zucca, G; Perin, P; Valli, P

    2003-08-01

    In birds, type I and type II hair cells differentiate before birth. Here we describe that chick hair cells, from the semicircular canals, begin expressing a voltage-dependent Na current (INa) from embryonic day 14 (E14) and continue to express the current up to hatching (E21). During this period, INa was present in most (31/43) type I hair cells irrespective of their position in the crista, in most type II hair cells located far from the planum semilunatum (48/63), but only occasionally in type II hair cells close to the planum semilunatum (2/35). INa activated close to -60 mV, showed fast time- and voltage-dependent activation and inactivation, and was completely, and reversibly, blocked by submicromolar concentrations of tetrodotoxin (Kd = 17 nM). One peculiar property of INa concerns its steady-state inactivation, which is complete at -60 mV (half-inactivating voltage = -96 mV). INa was found in type I and type II hair cells from the adult chicken as well, where it had similar, although possibly not identical, properties and regional distribution. Current-clamp experiments showed that INa could contribute to the voltage response provided that the cell membrane was depolarized from holding potentials more negative than -80 mV. When recruited, INa produced a significant acceleration of the cell membrane depolarization, which occasionally elicited a large rapid depolarization followed by a rapid repolarization (action-potential-like response). Possible physiological roles for INa in the embryo and adult chicken are discussed.

  13. High-voltage direct-current circuit breakers

    International Nuclear Information System (INIS)

    Yoshioka, Y.; Hirasawa, K.

    1991-01-01

    This paper reports that in 1954 the first high-voltage direct-current (HVDC) transmission system was put into operation between Gotland and the mainland of Sweden. Its system voltage and capacity were 100 kV and 20 MW, respectively. Since then many HVDC transmission systems have been planned, constructed, or commissioned in more than 30 places worldwide, and their total capacity is close to 40 GW. Most systems commissioned to date are two-terminal schemes, and HVDC breakers are not yet used in the high-potential main circuit of those systems, because the system is expected to perform well using only converter/inverter control even at a fault stage of the transmission line. However, even in a two-terminal scheme there are not a few merits in using an HVDC breaker when the system has two parallel transmission lines, that is, when it is a double-circuit system

  14. A Contribution To The Development And Analysis Of A Combined Current-Voltage Instrument Transformer By Using Modern CAD Methods

    International Nuclear Information System (INIS)

    Chundeva-Blajer, Marija M.

    2004-01-01

    The principle aim and task of the thesis is the analysis and development of 20 kV combined current-voltage instrument transformer (CCVIT) by using modern CAD techniques. CCVIT is a complex electromagnetic system comprising of four windings and two magnetic cores in one insulation housing for simultaneous transformation of high voltages and currents to measurable signal values by standard instruments. The analytical design methods can be applied on simple electromagnetic configurations, which is not the case with the CCVIT. There is mutual electromagnetic influence between the voltage measurement core (VMC) and the current measurement core (CMC). After the analytical CCVIT design had been done, exact determination of its metrological characteristics has been accomplished by using the numerical finite element method implemented in the FEM-3D program package. The FEM-3D calculation is made in 19 cross-sectional layers of the z-axis of the CCVIT three-dimensional domain. By FEM-3D application the three-dimensional CCVIT magnetic field distribution is derived. This is the basis for calculation of the initial metrological characteristics of the CCVIT (VMC is accuracy class 3 and CMC is accuracy class 1). By using the stochastic optimization technique based on genetic algorithm the CCVIT optimal design is achieved. The objective function is the minimum of the metrological parameters (VIM voltage error and CMC current error). There are I I independent input variables during the optimization process by which the optimal project is derived. The optimal project is adapted for realization of a prototype and the optimized project is derived. Full comparative analysis of the metrological and the electromagnetic characteristics of the three projects is accomplished. By application of the program package MATLAB/SIMULINK the CCVIT transient phenomena is analyzed for different regimes in the three design projects. In the Instrument Transformer Factory of EMO A. D.-Ohrid a CCVIT

  15. Effects of the intrinsic layer width on the band-to-band tunneling current in p-i-n GaN-based avalanche photodiodes

    International Nuclear Information System (INIS)

    Wang, Ling; Bao, Xichang; Zhang, Wenjing; Li, Chao; Yuan, Yonggang; Xu, Jintong; Zhang, Yan; Li, Xiangyang

    2009-01-01

    Dark current is critical for GaN-based avalanche photodiodes because it significantly increases the noise current and limits the multiplication factor. It has been found that the band-to-band tunneling current is the dominant origin of the dark current for avalanche photodiodes at the onset of breakdown voltage. Experimentally, for GaN-based avalanche photodiodes with a thinner intrinsic layer, the dark current increases nearly exponentially with the applied voltage even at a lower bias voltage. In this paper, the intrinsic layer (i-layer) width of GaN-based avalanche photodiodes has been varied to study its effect on the band-to-band tunneling current. A widely used equation was used to calculate the band-to-band tunneling current of avalanche photodiodes with different i-layer widths (i-layer 0.1 µm, 0.2 µm and 0.4 µm). At −40 V, the band-to-band tunneling current significantly reduces by a magnitude of 10 −15 A with an increase in the i-layer width from 0.1 µm to 0.2 µm, and a magnitude of 10 −29 A with an increase in the i-layer width from 0.2 µm to 0.4 µm. Then, GaN-based avalanche photodiodes (i-layer 0.1 µm, 0.2 µm and 0.4 µm) with different-sized mesa were fabricated. Also, the measurement of dark current of all three different structures was performed, and their multiplication factors were given

  16. Parameter extraction from I-V characteristics of PV devices

    Energy Technology Data Exchange (ETDEWEB)

    Macabebe, Erees Queen B. [Department of Electronics, Computer and Communications Engineering, Ateneo de Manila University, Loyola Heights, Quezon City 1108 (Philippines); Department of Physics and Centre for Energy Research, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa); Sheppard, Charles J. [Department of Physics, University of Johannesburg, PO Box 524, Auckland Park 2006 (South Africa); Dyk, E. Ernest van [Department of Physics and Centre for Energy Research, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa)

    2011-01-15

    Device parameters such as series and shunt resistances, saturation current and diode ideality factor influence the behaviour of the current-voltage (I-V) characteristics of solar cells and photovoltaic modules. It is necessary to determine these parameters since performance parameters are derived from the I-V curve and information provided by the device parameters are useful in analyzing performance losses. This contribution presents device parameters of CuIn(Se,S){sub 2}- and Cu(In,Ga)(Se,S){sub 2}-based solar cells, as well as, CuInSe{sub 2}, mono- and multicrystalline silicon modules determined using a parameter extraction routine that employs Particle Swarm Optimization. The device parameters of the CuIn(Se,S){sub 2}- and Cu(In,Ga)(Se,S){sub 2}-based solar cells show that the contribution of recombination mechanisms exhibited by high saturation current when coupled with the effects of parasitic resistances result in lower maximum power and conversion efficiency. Device parameters of photovoltaic modules extracted from I-V characteristics obtained at higher temperature show increased saturation current. The extracted values also reflect the adverse effect of temperature on parasitic resistances. The parameters extracted from I-V curves offer an understanding of the different mechanisms involved in the operation of the devices. The parameter extraction routine utilized in this study is a useful tool in determining the device parameters which reveal the mechanisms affecting device performance. (author)

  17. A FAST study of quasi-static structure ("Inverted-V") potential drops and their latitudinal dependence in the premidnight sector and ramifications for the current-voltage relationship

    Science.gov (United States)

    Dombeck, J.; Cattell, C.; McFadden, J.

    2013-09-01

    Utilizing FAST satellite electron measurements, we present the first reported investigation of the dependency on latitude of quasi-static structure ("inverted-V") potential drop magnitude (Φ). A trend of lower Φ at lower latitudes in the premidnight sector on field lines with dark foot points was observed. This trend is supported both statistically and in individual satellite crossings. The existence of two distinct peaks in occurrence probability for Φ was also observed: one between ~2 kV and 10 kV and the other at somewhat less than 1 kV. The relative occurrence of structures with Φ in the higher (>2 kV) peak is significantly reduced with decreasing latitude. This partially accounts for the statistical trend of lower potential drop magnitudes at lower latitudes. The two Φ occurrence frequency peaks correspond to two different regimes (one with eΦ/kTe ~ or > 1 and one with eΦ/kTe current-voltage relation where source electron density rather than Φ is most directly controlled by the field-aligned current density. These observations and their ramifications represent a significant step forward in the understanding of field-aligned currents, auroral acceleration, and magnetospheric-ionospheric coupling.

  18. A matter of quantum voltages

    Energy Technology Data Exchange (ETDEWEB)

    Sellner, Bernhard; Kathmann, Shawn M., E-mail: Shawn.Kathmann@pnnl.gov [Physical Sciences Division, Pacific Northwest National Laboratory, Richland, Washington 99352 (United States)

    2014-11-14

    Voltages inside matter are relevant to crystallization, materials science, biology, catalysis, and aqueous chemistry. The variation of voltages in matter can be measured by experiment, however, modern supercomputers allow the calculation of accurate quantum voltages with spatial resolutions of bulk systems well beyond what can currently be measured provided a sufficient level of theory is employed. Of particular interest is the Mean Inner Potential (V{sub o}) – the spatial average of these quantum voltages referenced to the vacuum. Here we establish a protocol to reliably evaluate V{sub o} from quantum calculations. Voltages are very sensitive to the distribution of electrons and provide metrics to understand interactions in condensed phases. In the present study, we find excellent agreement with measurements of V{sub o} for vitrified water and salt crystals and demonstrate the impact of covalent and ionic bonding as well as intermolecular/atomic interactions. Certain aspects in this regard are highlighted making use of simple model systems/approximations. Furthermore, we predict V{sub o} as well as the fluctuations of these voltages in aqueous NaCl electrolytes and characterize the changes in their behavior as the resolution increases below the size of atoms.

  19. Differences between signal currents for both polarities of applied voltages on cavity ionization chambers

    International Nuclear Information System (INIS)

    Takata, N.

    2000-01-01

    It is necessary to obtain precise values of signal currents for the measurement of exposure rates for gamma rays with cavity ionization chambers. Signal currents are usually expected to have the same absolute values for both polarities of applied voltages. In the case of cylindrical cavity ionization chambers, volume recombination loss of ion pairs depends on the polarity of the applied voltage. This is because the values of mobility are different for positive and negative ions. It was found, however, that values of signal currents from a cylindrical ionization chamber change slightly more with a negative than with a positive applied voltage, even after being corrected for volume recombination loss. Moreover, absolute values of saturation currents, which are obtained by extrapolation of correction of initial recombination and diffusion loss, were larger for the negative than for the positive applied voltage. It is known from an experiment with parallel plate ionization chambers that when negative voltage is applied to the repeller electrode, the saturated signal current decreases with an increase in the applied voltage. This is because secondary electrons are accelerated and the stopping power of air for these electrons decreases. When positive voltage is applied, the reverse is true. The effects of acceleration and deceleration of secondary electrons by the electric field thus seem to cause a tendency opposite to the experimental results on the signal currents from cylindrical ionization chambers. The experimental results for the cylindrical ionization chamber can be explained as follows. When negative voltage is applied, secondary electrons are attracted to the central (collecting) electrode. Consequently, the path length of the trajectories of these secondary electrons in the ionization volume increases and signal current increases. The energy gain from the electric field by secondary electrons which stop in the ionization chamber also contributes to the

  20. Improvements on high voltage capacity and high temperature performances of Si-based Schottky potential barrier diode

    International Nuclear Information System (INIS)

    Wang Yongshun; Rui Li; Adnan Ghaffar; Wang Zaixing; Liu Chunjuan

    2015-01-01

    In order to improve the reverse voltage capacity and low junction temperature characteristics of the traditional silicon-based Schottky diode, a Schottky diode with high reverse voltage capacity and high junction temperature was fabricated using ion implantation, NiPt60 sputtering, silicide-forming and other major technologies on an N-type silicon epitaxial layer of 10.6–11.4 μm and (2.2–2.4) × 10 15 cm −3 doping concentration. The measurement results show that the junction temperature of the Schottky diode fabricated can reach 175 °C, that is 50 °C higher than that of the traditional one; the reverse voltage capacity V R can reach 112 V, that is 80 V higher than that of the traditional one; the leakage current is only 2 μA and the forward conduction voltage drop is V F = 0.71 V at forward current I F = 3 A. (semiconductor devices)

  1. Hole-transport limited S-shaped I-V curves in planar heterojunction organic photovoltaic cells

    Science.gov (United States)

    Zhang, Minlu; Wang, Hui; Tang, C. W.

    2011-11-01

    Current-voltage (I-V) characteristics of planar heterojunction organic photovoltaic cells based on N',N'-Di-[(1-naphthyl)-N',N'-diphenyl]-1,1'-biphenyl)-4,4'-diamine (NPB) and C60 are investigated. Through variation of the layer thickness and composition, specifically chemical doping NPB with MoOx, we show that the hole-transport limitation in the NPB layer is the determining factor in shaping the I-V characteristics of NPB/C60 cells.

  2. Comparison between voltage by turn measured on different tokamaks operating in hybrid wave current drive regime

    International Nuclear Information System (INIS)

    Briffod, G.; Hoang, G.T.

    1987-06-01

    On a tokamak in a current drive operation with a hybrid wave, the R.F. current is estimated from the voltage drop by plasma turn generated by R.F. power application. This estimated current is not proportional to the injected power. There still exists in the plasma an electric field corresponding to the current part produced by induction. The role evaluation of this parameter on the current drive efficiency is important. In this report the relation voltage-R.F. current is studied on Petula and results on the voltage evolution by turn on different machines are compared [fr

  3. Voltage spikes in Nb3Sn and NbTi strands

    International Nuclear Information System (INIS)

    Bordini, B.; Ambrosio, G.; Barzi, E.; Carcagno, R.; Feher, S.; Kashikhin, V.V.; Lamm, M.J.; Orris, D.; Tartaglia, M.; Tompkins, J.C.; Turrioni, D.; Yamada, R.; Zlobin, A.V.; Fermilab

    2005-01-01

    As part of the High Field Magnet program at Fermilab several NbTi and Nb 3 Sn strands were tested with particular emphasis on the study of voltage spikes and their relationship to superconductor instabilities. The voltage spikes were detected under various experimental conditions using voltage-current (V-I) and voltage-field (V-H) methods. Two types of spikes, designated ''magnetization'' and ''transport current'' spikes, have been identified. Their origin is most likely related to magnetization flux jump and transport current redistribution, respectively. Many of the signals observed appear to be a combination of these two types of spikes; the combination of these two instability mechanisms should play a dominant role in determining the minimum quench current

  4. Calibration of kV measurers with the practical peak voltage (IEC 1676)

    International Nuclear Information System (INIS)

    Becker, Paulo H.B.; Peres, Marcos A.L.; Ludwig, Jaime L.; Chernicharo, Carlos C.

    2002-01-01

    The IEC 1676 standard introduces a new quantity for the measurements of the high voltages applied to the X ray tubes used for diagnosis, the 'Practical Peak Voltage' (PPV). In order to start the introduction of this new quantity in Brazil the National Laboratory for Metrology of Ionizing Radiation has developed a procedure for calibrating measuring instruments in this quantity. This procedure is based in the same set up used for the calibration of the conventional kVp, which consists in a high voltage divider (Dynalyser III from Radcal Corporation), a fast analogue to digital conversion board and a data acquisition software. In order to evaluate this procedure a commercial kVp measure instrument that is able to measure PPV (Universal Diavolt from PTW) was calibrated and the results compared. This work presents a summary of the procedure developed and the results obtained with the comparison. (author)

  5. Measurements of current penetration during PDX discharge start-up

    International Nuclear Information System (INIS)

    Meyerhofer, D.D.; Goldston, R.J.; Kaita, R.; Cavallo, A.; Grek, B.; Johnson, D.; McCune, D.C.; McGuire, K.; White, R.B.

    1984-11-01

    The current penetration phase of PDX discharges is examined. The Fast Ion Diagnostic Experiment has been used to measure the temporal evolution of the central q (r/a < 0.4), and to show the effect of magnetic perturbations on fast ions. During plasma current penetration, a series of magnetic perturbations was observed in the plasma. If the current was rising rapidly, the perturbations were accompanied by increases in β/sub theta/ + l/sub i//2 and decreases in the loop voltage, suggesting a rapid penetration of the plasma current. When the plasma current was rising slowly, a series of minor disruptions occurred. These were accompanied by decreases in β/sub theta/ + l/sub i//2 and the loop voltage, and increases in the plasma current. During this phase, current penetration may be enhanced by the change in the resistivity profile which accompanies the disruption

  6. Study of current-voltage characteristics in PbTe(Ga) alloys at low temperatures

    International Nuclear Information System (INIS)

    Akimov, B.A.; Albul, A.V.; Bogdanov, E.V.

    1992-01-01

    Results of determining current-voltage characteristics in PbTe(Ga) monocrystals of n- and p-types of conductivity in strong electric fields E ≤ 2 x 10 3 V/Cm at 4.2-77 K are presented. It was established that at helium and nitrogen temperatures, the current-voltage characteristics of PbTe(Ga) alloys, high-ohmic state of which was realized in helium, differed qualitatively from ones, typical for unalloyed PbTe. The superlinear dependence, observed in the fields, beginning from E ≥ 1 V/cm, is explained in the framework of concepts of strong electric field effect on conductivity of impurity states

  7. Current transport mechanisms in mercury cadmium telluride diode

    Energy Technology Data Exchange (ETDEWEB)

    Gopal, Vishnu, E-mail: vishnu-46@yahoo.com, E-mail: wdhu@mail.sitp.ac.cn [Institute of Defence Scientists and Technologists, CFEES Complex, Brig. S. K. Majumdar Marg, Delhi 110054 (India); Li, Qing; He, Jiale; Hu, Weida, E-mail: vishnu-46@yahoo.com, E-mail: wdhu@mail.sitp.ac.cn [National Lab for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083 (China); He, Kai; Lin, Chun [Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083 (China)

    2016-08-28

    This paper reports the results of modelling of the current-voltage characteristics (I-V) of a planar mid-wave Mercury Cadmium Telluride photodiode in a gate controlled diode experiment. It is reported that the diode exhibits nearly ideal I-V characteristics under the optimum surface potential leading to the minimal surface leakage current. Deviations from the optimum surface potential lead to non ideal I–V characteristics, indicating a strong relationship between the ideality factor of the diode with its surface leakage current. Diode's I–V characteristics have been modelled over a range of gate voltages from −9 V to −2 V. This range of gate voltages includes accumulation, flat band, and depletion and inversion conditions below the gate structure of the diode. It is shown that the I–V characteristics of the diode can be very well described by (i) thermal diffusion current, (ii) ohmic shunt current, (iii) photo-current due to background illumination, and (iv) excess current that grows by the process of avalanche multiplication in the gate voltage range from −3 V to −5 V that corresponds to the optimum surface potential. Outside the optimum gate voltage range, the origin of the excess current of the diode is associated with its high surface leakage currents. It is reported that the ohmic shunt current model applies to small surface leakage currents. The higher surface leakage currents exhibit a nonlinear shunt behaviour. It is also shown that the observed zero-bias dynamic resistance of the diode over the entire gate voltage range is the sum of ohmic shunt resistance and estimated zero-bias dynamic resistance of the diode from its thermal saturation current.

  8. A high-voltage equipment (high voltage supply, high voltage pulse generators, resonant charging inductance, synchro-instruments for gyrotron frequency measurements) for plasma applications

    International Nuclear Information System (INIS)

    Spassov, Velin

    1996-01-01

    This document reports my activities as visitor-professor at the Gyrotron Project - INPE Plasma Laboratory. The main objective of my activities was designing, construction and testing a suitable high-voltage pulse generator for plasma applications, and efforts were concentrated on the following points: Design of high-voltage resonant power supply with tunable output (0 - 50 kV) for line-type high voltage pulse generator; design of line-type pulse generator (4 microseconds pulse duration, 0 - 25 kV tunable voltage) for non linear loads such as a gyrotron and P III reactor; design of resonant charging inductance for resonant line-type pulse generator, and design of high resolution synchro instrument for gyrotron frequency measurement. (author)

  9. Contribution of S4 segments and S4-S5 linkers to the low-voltage activation properties of T-type CaV3.3 channels.

    Directory of Open Access Journals (Sweden)

    Ana Laura Sanchez-Sandoval

    Full Text Available Voltage-gated calcium channels contain four highly conserved transmembrane helices known as S4 segments that exhibit a positively charged residue every third position, and play the role of voltage sensing. Nonetheless, the activation range between high-voltage (HVA and low-voltage (LVA activated calcium channels is around 30-40 mV apart, despite the high level of amino acid similarity within their S4 segments. To investigate the contribution of S4 voltage sensors for the low-voltage activation characteristics of CaV3.3 channels we constructed chimeras by swapping S4 segments between this LVA channel and the HVA CaV1.2 channel. The substitution of S4 segment of Domain II in CaV3.3 by that of CaV1.2 (chimera IIS4C induced a ~35 mV shift in the voltage-dependence of activation towards positive potentials, showing an I-V curve that almost overlaps with that of CaV1.2 channel. This HVA behavior induced by IIS4C chimera was accompanied by a 2-fold decrease in the voltage-dependence of channel gating. The IVS4 segment had also a strong effect in the voltage sensing of activation, while substitution of segments IS4 and IIIS4 moved the activation curve of CaV3.3 to more negative potentials. Swapping of IIS4 voltage sensor influenced additional properties of this channel such as steady-state inactivation, current decay, and deactivation. Notably, Domain I voltage sensor played a major role in preventing CaV3.3 channels to inactivate from closed states at extreme hyperpolarized potentials. Finally, site-directed mutagenesis in the CaV3.3 channel revealed a partial contribution of the S4-S5 linker of Domain II to LVA behavior, with synergic effects observed in double and triple mutations. These findings indicate that IIS4 and, to a lesser degree IVS4, voltage sensors are crucial in determining the LVA properties of CaV3.3 channels, although the accomplishment of this function involves the participation of other structural elements like S4-S5 linkers.

  10. Contribution of S4 segments and S4-S5 linkers to the low-voltage activation properties of T-type CaV3.3 channels

    Science.gov (United States)

    Sanchez-Sandoval, Ana Laura; Herrera Carrillo, Zazil; Díaz Velásquez, Clara Estela; Delgadillo, Dulce María; Rivera, Heriberto Manuel

    2018-01-01

    Voltage-gated calcium channels contain four highly conserved transmembrane helices known as S4 segments that exhibit a positively charged residue every third position, and play the role of voltage sensing. Nonetheless, the activation range between high-voltage (HVA) and low-voltage (LVA) activated calcium channels is around 30–40 mV apart, despite the high level of amino acid similarity within their S4 segments. To investigate the contribution of S4 voltage sensors for the low-voltage activation characteristics of CaV3.3 channels we constructed chimeras by swapping S4 segments between this LVA channel and the HVA CaV1.2 channel. The substitution of S4 segment of Domain II in CaV3.3 by that of CaV1.2 (chimera IIS4C) induced a ~35 mV shift in the voltage-dependence of activation towards positive potentials, showing an I-V curve that almost overlaps with that of CaV1.2 channel. This HVA behavior induced by IIS4C chimera was accompanied by a 2-fold decrease in the voltage-dependence of channel gating. The IVS4 segment had also a strong effect in the voltage sensing of activation, while substitution of segments IS4 and IIIS4 moved the activation curve of CaV3.3 to more negative potentials. Swapping of IIS4 voltage sensor influenced additional properties of this channel such as steady-state inactivation, current decay, and deactivation. Notably, Domain I voltage sensor played a major role in preventing CaV3.3 channels to inactivate from closed states at extreme hyperpolarized potentials. Finally, site-directed mutagenesis in the CaV3.3 channel revealed a partial contribution of the S4-S5 linker of Domain II to LVA behavior, with synergic effects observed in double and triple mutations. These findings indicate that IIS4 and, to a lesser degree IVS4, voltage sensors are crucial in determining the LVA properties of CaV3.3 channels, although the accomplishment of this function involves the participation of other structural elements like S4-S5 linkers. PMID:29474447

  11. Contribution of S4 segments and S4-S5 linkers to the low-voltage activation properties of T-type CaV3.3 channels.

    Science.gov (United States)

    Sanchez-Sandoval, Ana Laura; Herrera Carrillo, Zazil; Díaz Velásquez, Clara Estela; Delgadillo, Dulce María; Rivera, Heriberto Manuel; Gomora, Juan Carlos

    2018-01-01

    Voltage-gated calcium channels contain four highly conserved transmembrane helices known as S4 segments that exhibit a positively charged residue every third position, and play the role of voltage sensing. Nonetheless, the activation range between high-voltage (HVA) and low-voltage (LVA) activated calcium channels is around 30-40 mV apart, despite the high level of amino acid similarity within their S4 segments. To investigate the contribution of S4 voltage sensors for the low-voltage activation characteristics of CaV3.3 channels we constructed chimeras by swapping S4 segments between this LVA channel and the HVA CaV1.2 channel. The substitution of S4 segment of Domain II in CaV3.3 by that of CaV1.2 (chimera IIS4C) induced a ~35 mV shift in the voltage-dependence of activation towards positive potentials, showing an I-V curve that almost overlaps with that of CaV1.2 channel. This HVA behavior induced by IIS4C chimera was accompanied by a 2-fold decrease in the voltage-dependence of channel gating. The IVS4 segment had also a strong effect in the voltage sensing of activation, while substitution of segments IS4 and IIIS4 moved the activation curve of CaV3.3 to more negative potentials. Swapping of IIS4 voltage sensor influenced additional properties of this channel such as steady-state inactivation, current decay, and deactivation. Notably, Domain I voltage sensor played a major role in preventing CaV3.3 channels to inactivate from closed states at extreme hyperpolarized potentials. Finally, site-directed mutagenesis in the CaV3.3 channel revealed a partial contribution of the S4-S5 linker of Domain II to LVA behavior, with synergic effects observed in double and triple mutations. These findings indicate that IIS4 and, to a lesser degree IVS4, voltage sensors are crucial in determining the LVA properties of CaV3.3 channels, although the accomplishment of this function involves the participation of other structural elements like S4-S5 linkers.

  12. Inhomogeneous barrier height effect on the current-voltage characteristics of an Au/n-InP Schottky diode

    Science.gov (United States)

    Zeghdar, Kamal; Dehimi, Lakhdar; Saadoune, Achour; Sengouga, Nouredine

    2015-12-01

    We report the current-voltage (I-V) characteristics of the Schottky diode (Au/n-InP) as a function of temperature. The SILVACO-TCAD numerical simulator is used to calculate the I-V characteristic in the temperature range of 280-400 K. This is to study the effect of temperature on the I-V curves and assess the main parameters that characterize the Schottky diode such as the ideality factor, the height of the barrier and the series resistance. The I-V characteristics are analyzed on the basis of standard thermionic emission (TE) theory and the inhomogeneous barrier heights (BHs) assuming a Gaussian distribution. It is shown that the ideality factor decreases while the barrier height increases with increasing temperature, on the basis of TE theory. Furthermore, the homogeneous BH value of approximately 0.524 eV for the device has been obtained from the linear relationship between the temperature-dependent experimentally effective BHs and ideality factors. The modified Richardson plot, according to the inhomogeneity of the BHs, has a good linearity over the temperature range. The evaluated Richardson constant A* was 10.32 A·cm-2·K-2, which is close to the theoretical value of 9.4 A·cm-2·K-2 for n-InP. The temperature dependence of the I-V characteristics of the Au/n-InP Schottky diode have been successfully explained on the basis of the thermionic emission (TE) mechanism with a Gaussian distribution of the Schottky barrier heights (SBHs). Simulated I-V characteristics are in good agreement with the measurements [Korucu D, Mammadov T S. J Optoelectronics Advanced Materials, 2012, 14: 41]. The barrier height obtained using Gaussian Schottky barrier distribution is 0.52 eV, which is about half the band gap of InP.

  13. Non-contact current and voltage sensing method using a clamshell housing and a ferrite cylinder

    Science.gov (United States)

    Carpenter, Gary D.; El-Essawy, Wael; Ferreira, Alexandre Peixoto; Keller, Thomas Walter; Rubio, Juan C.; Schappert, Michael

    2016-04-26

    A method of measurement using a detachable current and voltage sensor provides an isolated and convenient technique for to measuring current passing through a conductor such as an AC branch circuit wire, as well as providing an indication of an electrostatic potential on the wire, which can be used to indicate the phase of the voltage on the wire, and optionally a magnitude of the voltage. The device includes a housing that contains the current and voltage sensors, which may be a ferrite cylinder with a hall effect sensor disposed in a gap along the circumference to measure current, or alternative a winding provided through the cylinder along its axis and a capacitive plate or wire disposed adjacent to, or within, the ferrite cylinder to provide the indication of the voltage.

  14. Measurements of Photocathode Operational Lifetime at Beam Currents up to 10 mA using an Improved DC High Voltage GaAs Photogun

    International Nuclear Information System (INIS)

    Grames, J.; Poelker, M.; Adderley, P.; Brittian, J.; Clark, J.; Hansknecht, J.; Machie, D.; Stutzman, M. L.; Surles-Law, K.

    2007-01-01

    This work extends past research at Jefferson Lab aimed at better appreciating the mechanisms that limit photocathode operational lifetime at high current (> 1 mA). Specifically, the performance of an improved 100 kV DC high voltage load locked photogun will be described. Although difficult to measure directly, we believe the new gun has better vacuum conditions compared to the original gun, as indicated by enhanced photocathode lifetimes exceeding 2000 C using a 1.55 mm diameter drive laser spot at the photocathode. In addition, the dependence of the lifetime on the laser spot size at the photocathode was measured and a charge density lifetime exceeding 106 C/cm2 was measured with a 0.32 mm laser spot diameter

  15. Measurements of photocathode operational lifetime at beam currents up to 10-mA using an improved DC high voltage GaAs photogun

    International Nuclear Information System (INIS)

    J. Grames; M. Poelker; P. Adderley; J. Brittian; J. Clark; J. Hansknecht; D. Machie; M.L. Stutzman; K. Surles-Law

    2007-01-01

    This work extends past research at Jefferson Lab aimed at better appreciating the mechanisms that limit photocathode operational lifetime at high current (> 1 mA). Specifically, the performance of an improved 100 kV DC high voltage load locked photogun will be described. Although difficult to measure directly, we believe the new gun has better vacuum conditions compared to the original gun, as indicated by enhanced photocathode lifetimes exceeding 2000 C using a 1.55 mm diameter drive laser spot at the photocathode. In addition, the dependence of the lifetime on the laser spot size at the photocathode was measured and a charge density lifetime exceeding 10 6 C/cm 2 was measured with a 0.32 mm laser spot diameter

  16. Effect of Reverse Bias Stress on Leakage Currents and Breakdown Voltages of Solid Tantalum Capacitors

    Science.gov (United States)

    Teverovsky, Alexander A.

    2011-01-01

    The majority of solid tantalum capacitors are produced by high-temperature sintering of a fine tantalum powder around a tantalum wire followed by electrolytic anodization that forms a thin amorphous Ta2O5 dielectric layer and pyrolysis of manganese nitrite on the oxide to create a conductive manganese dioxide electrode. A contact to tantalum wire is used as anode terminal and to the manganese layer as a cathode terminal of the device. This process results in formation of an asymmetric Ta -- Ta2O5 -- MnO2 capacitor that has different characteristics at forward (positive bias applied to tantalum) and reverse (positive bias applied to manganese cathode) voltages. Reverse bias currents might be several orders of magnitude larger than forward leakage currents so I-V characteristics of tantalum capacitors resemble characteristics of semiconductor rectifiers. Asymmetric I-V characteristics of Ta -- anodic Ta2O5 systems have been observed at different top electrode materials including metals, electrolytes, conductive polymers, and manganese oxide thus indicating that this phenomenon is likely related to the specifics of the Ta -- Ta2O5 interface. There have been multiple attempts to explain rectifying characteristics of capacitors employing anodic tantalum pentoxide dielectrics. A brief review of works related to reverse bias (RB) behavior of tantalum capacitors shows that the mechanism of conduction in Ta -- Ta2O5 systems is still not clear and more testing and analysis is necessary to understand the processes involved. If tantalum capacitors behave just as rectifiers, then the assessment of the safe reverse bias operating conditions would be a relatively simple task. Unfortunately, these parts can degrade with time under reverse bias significantly, and this further complicates analysis of the I-V characteristics and establishing safe operating areas of the parts. On other hand, time dependence of reverse currents might provide additional information for investigation of

  17. Voltage spikes in Nb3Sn and NbTi strands

    Energy Technology Data Exchange (ETDEWEB)

    Bordini, B.; Ambrosio, G.; Barzi, E.; Carcagno, R.; Feher, S.; Kashikhin, V.V.; Lamm, M.J.; Orris, D.; Tartaglia, M.; Tompkins, J.C.; Turrioni, D.; Yamada, R.; Zlobin,; /Fermilab

    2005-09-01

    As part of the High Field Magnet program at Fermilab several NbTi and Nb{sub 3}Sn strands were tested with particular emphasis on the study of voltage spikes and their relationship to superconductor instabilities. The voltage spikes were detected under various experimental conditions using voltage-current (V-I) and voltage-field (V-H) methods. Two types of spikes, designated ''magnetization'' and ''transport current'' spikes, have been identified. Their origin is most likely related to magnetization flux jump and transport current redistribution, respectively. Many of the signals observed appear to be a combination of these two types of spikes; the combination of these two instability mechanisms should play a dominant role in determining the minimum quench current.

  18. Commissioning experiences on high voltage generator of 750 KeV DC accelerator at RRCAT, Indore

    International Nuclear Information System (INIS)

    Banwari, R.; Kasliwal, A.; Pandit, T.G.

    2009-01-01

    Design approach of high voltage generator for 750 keV DC accelerator, developed at RRCAT Indore, inculcates a unique feature of high frequency operation of symmetrical Cockcroft-Walton voltage generator. Apart from design simplicity and feasibility of modular construction, the high frequency use of symmetrical Cockcroft-Walton circuit gives added advantages of less ripple, better regulation, faster response and low stored energy in the system. Additionally the scheme allows us the use of low voltage, light weight components thus improving the overall economy of the system. The accelerator has been commissioned and made operational at its rated energy of 750 keV in the recent past. With brief introduction on design aspects of high voltage generator and filament power supply of this accelerator, the paper presented here describes the developmental steps of various components with focus on challenges encountered and solutions implemented. Development of high frequency inverter, high voltage ferrite core transformer, compensating inductors, interface bushings, voltage multiplier stack, and filament transformer along with floating power supply for electron emitter of the accelerator has been dealt in detail. The failures encountered during commissioning stages of the accelerator have been reported with measures taken for improvement of the specific components. Intricacies of the reflected capacitance of the multiplier stack and arc-current ground return are also described with their effects on system operation and reliability. (author)

  19. Measurement of the Magnetic Fields from High-Voltage (230 kV Substations in Tehran and Assessment of Their Effects

    Directory of Open Access Journals (Sweden)

    Mahdieh Sharifi Fard

    2010-06-01

    Full Text Available Introduction: Recent industrial developments in human societies have caused rapid advancements in technologies of production and distribution of electricity, which in turn result in enhancement of power networks and utilization of high voltages. These networks and the high voltages in transfer lines cause the exposure to electric and magnetic fields. In this study, the situation regarding the magnetic fields from high-voltage (230 kV substations in Tehran was investigated. Material and Methods: In this study, 8 high-voltage (230 kV substations were selected (Shous, Shahid Firouzi, Ozgol, Kan, Tehranpars, Azadegan, Ghorkhane and Besat substations. The premises of each substation was divided into some stations and measurements were done in each one. Measurements were done according to the IEEE std 644-1994 Standard in a way that the device, specifically its probe, was kept at a height of 1 meter above the ground surface. Then, we tried to examine the probable effects of exposure to magnetic fields through the Essex questionnaire, with Cronbach coefficient of 94%, completed by the employees of the substations. These questionnaires were completed by substation operators as an exposed group (36 persons and the employees of the office section of the Tehran regional electric company as a witness group (32 persons. Results: The measured density in none of the stations exceeded the standard limits of the International Commission on Non-Ionizing Radiation Protection. With regard to the questionnaire results about mental and neurological, cardiac and respiratory, and gastrointestinal and auditory disorders, we observed significant differences between witness and exposed groups, however, regarding skin allergies, there was no significant difference. Conclusion: Among all control rooms, the highest measured magnetic field was 6.9 mG in the Ozgol Substation Control Room and the lowest was 2 mG in the post of Shahid Firouzi. The control room of Ozgol

  20. Non-contact current and voltage sensor having detachable housing incorporating multiple ferrite cylinder portions

    Science.gov (United States)

    Carpenter, Gary D.; El-Essawy, Wael; Ferreira, Alexandre Peixoto; Keller, Thomas Walter; Rubio, Juan C.; Schappert, Michael A.

    2016-04-26

    A detachable current and voltage sensor provides an isolated and convenient device to measure current passing through a conductor such as an AC branch circuit wire, as well as providing an indication of an electrostatic potential on the wire, which can be used to indicate the phase of the voltage on the wire, and optionally a magnitude of the voltage. The device includes a housing formed from two portions that mechanically close around the wire and that contain the current and voltage sensors. The current sensor is a ferrite cylinder formed from at least three portions that form the cylinder when the sensor is closed around the wire with a hall effect sensor disposed in a gap between two of the ferrite portions along the circumference to measure current. A capacitive plate or wire is disposed adjacent to, or within, the ferrite cylinder to provide the indication of the voltage.

  1. A CACNA1C variant associated with reduced voltage-dependent inactivation, increased CaV1.2 channel window current, and arrhythmogenesis.

    Directory of Open Access Journals (Sweden)

    Jessica A Hennessey

    Full Text Available Mutations in CACNA1C that increase current through the CaV1.2 L-type Ca2+ channel underlie rare forms of long QT syndrome (LQTS, and Timothy syndrome (TS. We identified a variant in CACNA1C in a male child of Filipino descent with arrhythmias and extracardiac features by candidate gene sequencing and performed functional expression studies to electrophysiologically characterize the effects of the variant on CaV1.2 channels. As a baby, the subject developed seizures and displayed developmental delays at 30 months of age. At age 5 years, he displayed a QTc of 520 ms and experienced recurrent VT. Physical exam at 17 years of age was notable for microcephaly, short stature, lower extremity weakness and atrophy with hyperreflexia, spastic diplegia, multiple dental caries and episodes of rhabdomyolysis. Candidate gene sequencing identified a G>C transversion at position 5731 of CACNA1C (rs374528680 predicting a glycine>arginine substitution at residue 1911 (p.G1911R of CaV1.2. The allele frequency of this variant is 0.01 in Malays, but absent in 984 Caucasian alleles and in the 1000 genomes project. In electrophysiological analyses, the variant decreased voltage-dependent inactivation, thus causing a gain of function of CaV1.2. We also observed a negative shift of V1/2 of activation and positive shift of V1/2 of channel inactivation, resulting in an increase of the window current. Together, these suggest a gain-of-function effect on CaV1.2 and suggest increased susceptibility for arrhythmias in certain clinical settings. The p.G1911R variant was also identified in a case of sudden unexplained infant death (SUID, for which an increasing number of clinical observations have demonstrated can be associated with arrhythmogenic mutations in cardiac ion channels. In summary, the combined effects of the CACNA1C variant to diminish voltage-dependent inactivation of CaV1.2 and increase window current expand our appreciation of mechanisms by which a gain of

  2. The importance of band tail recombination on current collection and open-circuit voltage in CZTSSe solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Moore, James E. [Naval Research Laboratory, Washington, DC 20375 (United States); Purdue University, West Lafayette, Indiana 47907 (United States); Hages, Charles J. [Purdue University, West Lafayette, Indiana 47907 (United States); Helmholtz-Zentrum Berlin für Materialien und Energie, Hahn-Meitner-Platz 1, 14109 Berlin (Germany); Agrawal, Rakesh; Lundstrom, Mark S.; Gray, Jeffery L. [Purdue University, West Lafayette, Indiana 47907 (United States)

    2016-07-11

    Cu{sub 2}ZnSn(S,Se){sub 4} (CZTSSe) solar cells typically exhibit high short-circuit current density (J{sub sc}), but have reduced cell efficiencies relative to other thin film technologies due to a deficit in the open-circuit voltage (V{sub oc}), which prevent these devices from becoming commercially competitive. Recent research has attributed the low V{sub oc} in CZTSSe devices to small scale disorder that creates band tail states within the absorber band gap, but the physical processes responsible for this V{sub oc} reduction have not been elucidated. In this paper, we show that carrier recombination through non-mobile band tail states has a strong voltage dependence and is a significant performance-limiting factor, and including these effects in simulation allows us to simultaneously explain the V{sub oc} deficit, reduced fill factor, and voltage-dependent quantum efficiency with a self-consistent set of material parameters. Comparisons of numerical simulations to measured data show that reasonable values for the band tail parameters (characteristic energy, capture rate) can account for the observed low V{sub oc}, high J{sub sc}, and voltage dependent collection efficiency. These results provide additional evidence that the presence of band tail states accounts for the low efficiencies of CZTSSe solar cells and further demonstrates that recombination through non-mobile band tail states is the dominant efficiency limiting mechanism.

  3. Current diffusion in a superconduting composite with a smeared I-V characteristic

    International Nuclear Information System (INIS)

    Keilin, V.E.; Romanovskii, V.R.

    1992-01-01

    Results are presented from numerical and analytical calculations of current injection into a superconducting composite of circular cross section with homogeneous properties throughout the cross section. A wire with an I-V characteristic approximated by an exponential dependence is examined. In the numerical solution, the joint occurrence of thermal and electromagnetic processes is taken into account. The calculations carried out for different current injection rates, parameters of the I-V characteristics, and heat transfer coefficients revealed: the existence of a characteristic limit current, below which the wire remains in a superconducting state after termination of current injection and above which the wire undergoes a transition to the normal state; this is somewhat below the cut-off current; the existence of a finite current at any small yet finite surface heat transfer coefficient. An analytical solution of the problem, based of the derived stability criterion, has made if possible to write an approximate relation between the limit currents and the initial parameters. Unlike previously reported results, this study takes into account the tolerable overheating of the wire, which depends on the depth of current flow, the specific heat of the wire, and its thermal and electrical conductivities

  4. Dynamic range of low-voltage cascode current mirrors

    DEFF Research Database (Denmark)

    Bruun, Erik; Shah, Peter Jivan

    1995-01-01

    Low-voltage cascode current mirrors are reviewed with respect to the design limitations imposed if all transistors in the mirror are required to operate in the saturation region. It is found that both a lower limit and an upper limit exist for the cascode transistor bias voltage. Further, the use....... The proposed configuration has the advantage of simplicity combined with a complete elimination of the need for fixed bias voltages or bias currents in the current mirror. A disadvantage is that it requires a higher input voltage to the current mirror...

  5. An easy way to measure accurately the direct magnetoelectric voltage coefficient of thin film devices

    Energy Technology Data Exchange (ETDEWEB)

    Poullain, Gilles, E-mail: gilles.poullain@ensicaen.fr; More-Chevalier, Joris; Cibert, Christophe; Bouregba, Rachid

    2017-01-15

    Tb{sub x}Dy{sub 1−x}Fe{sub 2}/Pt/Pb(Zr{sub x}, Ti{sub 1−x})O{sub 3} thin films were grown on Pt/TiO{sub 2}/SiO{sub 2}/Si substrate by multi-target sputtering. The magnetoelectric voltage coefficient α{sup Η}{sub ΜΕ} was determined at room temperature using a lock-in amplifier. By adding, in series in the circuit, a capacitor of the same value as that of the device under test, we were able to demonstrate that the magnetoelectric device behaves as a voltage source. Furthermore, a simple way to subtract the stray voltage arising from the flow of eddy currents in the measurement set-up, is proposed. This allows the easy and accurate determination of the true magnetoelectric voltage coefficient. A large α{sup Η}{sub ΜΕ} of 8.3 V/cm. Oe was thus obtained for a Terfenol-D/Pt/PZT thin film device, without DC magnetic field nor mechanical resonance. - Highlights: • Magnetoelectric device behaves as a voltage source. • A simple way to subtract eddy currents during the measurement, is proposed.

  6. Current-induced forces: a new mechanism to induce negative differential resistance and current-switching effect in molecular junctions

    Science.gov (United States)

    Gu, Lei; Fu, Hua-Hua

    2015-12-01

    Current-induced forces can excite molecules, polymers and other low-dimensional materials, which in turn leads to an effective gate voltage through Holstein interaction. Here, by taking a short asymmetric DNA junction as an example, and using the Langevin approach, we find that when suppression of charge transport by the effective gate voltage surpasses the current increase from an elevated voltage bias, the current-voltage (I-V) curves display strong negative differential resistance (NDR) and perfect current-switching characteristics. The asymmetric DNA chain differs in mechanical stability under inverse voltages and the I-V curve is asymmetric about inverse biases, which can be used to understand recent transport experiments on DNA chains, and meanwhile provides a new strategy to realize NDR in molecular junctions and other low-dimensional quantum systems.

  7. High-temperature performance of MoS{sub 2} thin-film transistors: Direct current and pulse current-voltage characteristics

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, C.; Samnakay, R.; Balandin, A. A., E-mail: balandin@ee.ucr.edu [Nano-Device Laboratory (NDL), Department of Electrical Engineering, Bourns College of Engineering, University of California—Riverside, Riverside, California 92521 (United States); Phonon Optimized Engineered Materials (POEM) Center, Materials Science and Engineering Program, University of California—Riverside, Riverside, California 92521 (United States); Rumyantsev, S. L. [Department of Electrical, Computer, and Systems Engineering, Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Ioffe Physical-Technical Institute, St. Petersburg 194021 (Russian Federation); Shur, M. S. [Department of Electrical, Computer, and Systems Engineering, Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States)

    2015-02-14

    We report on fabrication of MoS{sub 2} thin-film transistors (TFTs) and experimental investigations of their high-temperature current-voltage characteristics. The measurements show that MoS{sub 2} devices remain functional to temperatures of at least as high as 500 K. The temperature increase results in decreased threshold voltage and mobility. The comparison of the direct current (DC) and pulse measurements shows that the direct current sub-linear and super-linear output characteristics of MoS{sub 2} thin-films devices result from the Joule heating and the interplay of the threshold voltage and mobility temperature dependences. At temperatures above 450 K, a kink in the drain current occurs at zero gate voltage irrespective of the threshold voltage value. This intriguing phenomenon, referred to as a “memory step,” was attributed to the slow relaxation processes in thin films similar to those in graphene and electron glasses. The fabricated MoS{sub 2} thin-film transistors demonstrated stable operation after two months of aging. The obtained results suggest new applications for MoS{sub 2} thin-film transistors in extreme-temperature electronics and sensors.

  8. Optimize of Deuteron Current of 150 keV, 1 mA Neutron Generator

    International Nuclear Information System (INIS)

    Sri Sulamdari; Djasiman

    2003-01-01

    It has been characterized a 150 keV/1 mA Neutron Generator. It has been used some local components, except accelerator tube and vacuum system. To produce neutron, it has been used a deuterium gas bombarded into tritium target through reaction 3 H(d,n) 4 He. For preliminary experiment, we used the air as an ion source. The beam current of deuteron as a function of process parameters are presented in this paper. It's found that the optimum beam current of deuteron was 1000 μA, and this conditions was achieved at accelerations voltage 30 kV, extraction voltage 5 kV, guide voltage -11 kV and vacuum 10 -6 mbar. (author)

  9. Electronic voltage and current transformers testing device.

    Science.gov (United States)

    Pan, Feng; Chen, Ruimin; Xiao, Yong; Sun, Weiming

    2012-01-01

    A method for testing electronic instrument transformers is described, including electronic voltage and current transformers (EVTs, ECTs) with both analog and digital outputs. A testing device prototype is developed. It is based on digital signal processing of the signals that are measured at the secondary outputs of the tested transformer and the reference transformer when the same excitation signal is fed to their primaries. The test that estimates the performance of the prototype has been carried out at the National Centre for High Voltage Measurement and the prototype is approved for testing transformers with precision class up to 0.2 at the industrial frequency (50 Hz or 60 Hz). The device is suitable for on-site testing due to its high accuracy, simple structure and low-cost hardware.

  10. Associating ground magnetometer observations with current or voltage generators

    DEFF Research Database (Denmark)

    Hartinger, M. D.; Xu, Z.; Clauer, C. R.

    2017-01-01

    A circuit analogy for magnetosphere-ionosphere current systems has two extremes for driversof ionospheric currents: ionospheric elec tric fields/voltages constant while current/conductivity vary—the“voltage generator”—and current constant while electric field/conductivity vary—the “current generator.......”Statistical studies of ground magnetometer observations associated with dayside Transient High LatitudeCurrent Systems (THLCS) driven by similar mechanisms find contradictory results using this paradigm:some studies associate THLCS with voltage generators, others with current generators. We argue that mostof...... these two assumptions substantially alter expectations for magnetic perturbations associatedwith either a current or a voltage generator. Our results demonstrate that before interpreting groundmagnetometer observations of THLCS in the context of current/voltage generators, the location...

  11. High-voltage, high-current, solid-state closing switch

    Science.gov (United States)

    Focia, Ronald Jeffrey

    2017-08-22

    A high-voltage, high-current, solid-state closing switch uses a field-effect transistor (e.g., a MOSFET) to trigger a high-voltage stack of thyristors. The switch can have a high hold-off voltage, high current carrying capacity, and high time-rate-of-change of current, di/dt. The fast closing switch can be used in pulsed power applications.

  12. Current and voltage distribution in the diffuse vacuum arc

    NARCIS (Netherlands)

    Schellekens, H.; Schram, D.C.

    1985-01-01

    On the basis of extensive measurements, a model is developed for the diffuse plasma of the high-current vacuum arc. The model shows that the current constriction and the voltage distribution in the diffuse vacuum arc prior to anode-spot formation are caused by the pressure source to which the

  13. Transport current ac losses and current-voltage curves of multifilamentary Bi-2223/Ag tape with artificial defects

    International Nuclear Information System (INIS)

    Polak, M.; Jansak, L.

    2000-01-01

    We experimentally studied the effects of a single artificial defect and a linear array of artificial defects on I-V curves, critical currents and transport current ac losses of 55 filament untwisted Bi-2223/Ag tapes. The artificial defect was a small hole drilled into the tape. The reduction in the critical current measured on a 1 cm long section due to one hole of diameter 0.9 mm was 33% and that due to a linear array of seven similar holes was 62%. The slopes of the I-V curves, n, measured in this section were 33, 16 and 5.8 in the original sample, in the sample with one defect and the sample with seven defects, respectively. Both I c and the slope reduction were smaller if the distance between the potential taps was increased. The transport current ac losses at 50 Hz and I rms = 10 A in the sample with one defect measured in a 1 cm long section were practically the same as those in the original sample (4.1x10 -4 W m -1 ), but they increased by 83% in the sample with a linear array of seven defects. The measured increase in losses per unit length was the smaller, the larger the distance between the potential taps. A comparison between the measured and calculated losses revealed that a formal application of the Norris equations for loss calculations in samples with local defects leads to an overestimation of the ac losses. A procedure for the calculation of transport current losses in samples with local defects based on the Norris model is proposed and verified. (author)

  14. Investigation of disorder and its effect on electrical transport in electrochemically doped polymer devices by current-voltage and impedance spectroscopy

    Science.gov (United States)

    Rahman Khan, Motiur; Anjaneyulu, P.; Koteswara Rao, K. S. R.; Menon, R.

    2017-03-01

    We report on the analysis of temperature-dependent current-voltage characteristics and impedance measurements of electrochemically doped poly(3-methylthiophene) devices at different doping levels. The extent of doping is carefully tailored such that only the bulk-limited transport mechanism prevails. A transition from exponentially distributed trap-limited transport to trap-free space-charge-limited current is observed in current-voltage conduction upon increasing the doping. The obtained trap densities (3.2  ×  1016 cm-3 and 8.6  ×  1015 cm-3) and trap energies (31.7 meV and 16.6 meV) for different devices signify the variation in disorder with doping, which is later supported by impedance measurements. Impedance-frequency data for various devices can not be explained using the parallel resistance-capacitance (RC) model in the equivalent circuit. However, this was established by incorporating a constant phase element Q (CPE) instead of the capacitance parameter. It should be emphasized that low doping devices in particular are best simulated with two CPE elements, while the data related to other devices are fitted well with a single CPE element. It is also observed from evaluated circuit parameters that the spatial inhomogeneity and disorder are the cause of variability in different samples, which has an excellent correlation with the temperature-dependent current-voltage characteristics.

  15. Low frequency magnetic emissions and resulting induced voltages in a pacemaker by iPod portable music players

    Directory of Open Access Journals (Sweden)

    Bassen Howard

    2008-02-01

    Full Text Available Abstract Background Recently, malfunctioning of a cardiac pacemaker electromagnetic, caused by electromagnetic interference (EMI by fields emitted by personal portable music players was highly publicized around the world. A clinical study of one patient was performed and two types of interference were observed when the clinicians placed a pacemaker programming head and an iPod were placed adjacent to the patient's implanted pacemaker. The authors concluded that "Warning labels may be needed to avoid close contact between pacemakers and iPods". We performed an in-vitro study to evaluate these claims of EMI and present our findings of no-effects" in this paper. Methods We performed in-vitro evaluations of the low frequency magnetic field emissions from various models of the Apple Inc. iPod music player. We measured magnetic field emissions with a 3-coil sensor (diameter of 3.5 cm placed within 1 cm of the surface of the player. Highly localized fields were observed (only existing in a one square cm area. We also measured the voltages induced inside an 'instrumented-can' pacemaker with two standard unipolar leads. Each iPod was placed in the air, 2.7 cm above the pacemaker case. The pacemaker case and leads were placed in a saline filled torso simulator per pacemaker electromagnetic compatibility standard ANSI/AAMI PC69:2000. Voltages inside the can were measured. Results Emissions were strongest (≈ 0.2 μT pp near a few localized points on the cases of the two iPods with hard drives. Emissions consisted of 100 kHz sinusoidal signal with lower frequency (20 msec wide pulsed amplitude modulation. Voltages induced in the iPods were below the noise level of our instruments (0.5 mV pp in the 0 – 1 kHz band or 2 mV pp in the 0 – 5 MHz bandwidth. Conclusion Our measurements of the magnitude and the spatial distribution of low frequency magnetic flux density emissions by 4 different models of iPod portable music players. Levels of less than 0.2

  16. An Integrated Chip High-Voltage Power Receiver for Wireless Biomedical Implants

    Directory of Open Access Journals (Sweden)

    Vijith Vijayakumaran Nair

    2015-06-01

    Full Text Available In near-field wireless-powered biomedical implants, the receiver voltage largely overrides the compliance of low-voltage power receiver systems. To limit the induced voltage, generally, low-voltage topologies utilize limiter circuits, voltage clippers or shunt regulators, which are power-inefficient methods. In order to overcome the voltage limitation and improve power efficiency, we propose an integrated chip high-voltage power receiver based on the step down approach. The topology accommodates voltages as high as 30 V and comprises a high-voltage semi-active rectifier, a voltage reference generator and a series regulator. Further, a battery management circuit that enables safe and reliable implant battery charging based on analog control is proposed and realized. The power receiver is fabricated in 0.35-μm high-voltage Bipolar-CMOS-DMOStechnology based on the LOCOS0.35-μm CMOS process. Measurement results indicate 83.5% power conversion efficiency for a rectifier at 2.1 mA load current. The low drop-out regulator based on the current buffer compensation and buffer impedance attenuation scheme operates with low quiescent current, reduces the power consumption and provides good stability. The topology also provides good power supply rejection, which is adequate for the design application. Measurement results indicate regulator output of 4 ± 0.03 V for input from 5 to 30 V and 10 ± 0.05 V output for input from 11 to 30 V with load current 0.01–100 mA. The charger circuit manages the charging of the Li-ion battery through all if the typical stages of the Li-ion battery charging profile.

  17. Evaluation of indices for voltage stability monitoring using PMU measurements

    Directory of Open Access Journals (Sweden)

    Sindy Lorena Ramirez Perdomo

    2014-09-01

    Full Text Available Large disturbances such as voltage collapse and its consequences represent a large challenge to the operational safety of power systems. Therefore, it is important to have indicators of the presence of voltage stability problems in real time. Using phasor measure-ments of voltage and current that are presented in Phasor Measurement Units (PMU, indices for voltage stability monitoring can be calculated in real time. This paper presents some indices for voltage stability monitoring using PMU measurements. Evaluation of such indices on a simplified system was carried out, and the indices were classified according to their method of calculation. Finally, one of these indices was used with the New England 39-bus system under different operating scenarios, including load increments, line output and generator output, to check the indices’ behavior for voltage stability monitoring based on synchronized local measurements.

  18. Measured current drainage through holes in various dielectrics up to 2 kilovolts in a dilute plasma

    Science.gov (United States)

    Grier, N. T.; Mckinzie, D. J., Jr.

    1972-01-01

    The electron current drained from a plasma through approximately 0.05 cm diameter holes in eight possible space applicable dielectrics placed on a probe biased at voltages up to 2000 V dc have been determined both theoretically and experimentally. The dielectrics tested were Parylene C and N, Teflon FEP type C, Teflon TFE, Nomex, quartz 7940 Corning Glass, Mylar A, and Kapton H polymide film. A Laplace field was used to predict an upper limit for the drainage current. The measured current was less than the computed current for quartz, Teflon FEP, and the 0.0123 cm thick sample of Parylene N for all voltages tested. The drainage current through the other dielectrics became equal to or greater than the computed current at a voltage below 2000 V. The magnitudes of the currents were between 0.1 and 10 microamperes for most of the dielectrics.

  19. Differential B-dot and D-dot monitors for current and voltage measurements on a 20-MA 3-MV pulsed-power accelerator

    International Nuclear Information System (INIS)

    Shoup, Roy Willlam; Gilliland, Terrance Leo; Lee, James R.; Speas, Christopher Shane; Kim, Alexandre A.; Struve, Kenneth William; York, Mathew William; Leifeste, Gordon T.; Rochau, Gregory Alan; Sharpe, Arthur William; Stygar, William A.; Porter, John Larry Jr.; Wagoner, Tim C.; Reynolds, Paul Gerard; Slopek, Jeffrey Scott; Moore, William B.S.; Dinwoodie, Thomas Albert; Woodring, R.M.; Broyles, Robin Scott; Mills, Jerry Alan; Melville, J.A.; Dudley, M.E.; Androlewicz, K.E.; Mourning, R.W.; Moore, J.K.; Serrano, Jason Dimitri; Ives, H.C.; Johnson, M.F.; Peyton, B.P.; Leeper, Ramon Joe; Savage, Mark Edward; Donovan, Guy Louis; Spielman, R.B.; Seamen, Johann F.

    2007-01-01

    not combined in a balun; they are instead numerically processed for common-mode-noise rejection after digitization. All the current monitors are calibrated on a 76-cm-diameter axisymmetric radial transmission line that is driven by a 10-kA current pulse. The reference current is measured by a current-viewing resistor (CVR). The stack voltage monitors are also differential-output gauges, consisting of one 1.8-cm-diameter D-dot sensor and one null sensor. Hence, each voltage monitor is also a differential detector with two output signals, processed as described above. The voltage monitors are calibrated in situ at 1.5 MV on dedicated accelerator shots with a short-circuit load. Faraday's law of induction is used to generate the reference voltage: currents are obtained from calibrated outer-MITL B-dot monitors, and inductances from the system geometry. In this way, both current and voltage measurements are traceable to a single CVR. Dependable and consistent measurements are thus obtained with this system of calibrated diagnostics. On accelerator shots that deliver 22 MA to a low-impedance z-pinch load, the peak lineal current densities at the stack, outer-MITL, and inner-MITL monitor locations are 0.5, 1, and 58 MA/m, respectively. On such shots the peak currents measured at these three locations agree to within 1%

  20. Observation of linear I-V curves on vertical GaAs nanowires with atomic force microscope

    Science.gov (United States)

    Geydt, P.; Alekseev, P. A.; Dunaevskiy, M.; Lähderanta, E.; Haggrén, T.; Kakko, J.-P.; Lipsanen, H.

    2015-12-01

    In this work we demonstrate the possibility of studying the current-voltage characteristics for single vertically standing semiconductor nanowires on standard AFM equipped by current measuring module in PeakForce Tapping mode. On the basis of research of eight different samples of p-doped GaAs nanowires grown on different GaAs substrates, peculiar electrical effects were revealed. It was found how covering of substrate surface by SiOx layer increases the current, as well as phosphorous passivation of the grown nanowires. Elimination of the Schottky barrier between golden cap and the top parts of nanowires was observed. It was additionally studied that charge accumulation on the shell of single nanowires affects its resistivity and causes the hysteresis loops on I-V curves.

  1. Characteristics of output voltage and current of integrated nanogenerators

    KAUST Repository

    Yang, Rusen; Qin, Yong; Li, Cheng; Dai, Liming; Wang, Zhong Lin

    2009-01-01

    three criteria: Schottky behavior test, switching-polarity tests, and linear superposition of current and voltage tests. The 11 tests can effectively rule out the system artifacts, whose sign does not change with the switching measurement polarity

  2. Mutation I136V alters electrophysiological properties of the NaV1.7 channel in a family with onset of erythromelalgia in the second decade

    Directory of Open Access Journals (Sweden)

    Dib-Hajj Sulayman D

    2008-01-01

    Full Text Available Abstract Background Primary erythromelalgia is an autosomal dominant pain disorder characterized by burning pain and skin redness in the extremities, with onset of symptoms during the first decade in the families whose mutations have been physiologically studied to date. Several mutations of voltage-gated Na+ channel NaV1.7 have been linked with primary erythromelalgia. Recently, a new substitution NaV1.7/I136V has been reported in a Taiwanese family, in which pain appeared at later ages (9–22 years, with onset at 17 years of age or later in 5 of 7 family members, with relatively slow progression (8–10 years to involvement of the hands. The proband reported onset of symptoms first in his feet at the age of 11, which then progressed to his hands at the age of 19. The new mutation is located in transmembrane segment 1 (S1 of domain I (DI in contrast to all NaV1.7 mutations reported to date, which have been localized in the voltage sensor S4, the linker joining segments S4 and S5 or pore-lining segments S5 and S6 in DI, II and III. Results In this study, we characterized the gating and kinetic properties of I136V mutant channels in HEK293 cells using whole-cell patch clamp. I136V shifts the voltage-dependence of activation by -5.7 mV, a smaller shift in activation than the other erythromelalgia mutations that have been characterized. I136V also decreases the deactivation rate, and generates larger ramp currents. Conclusion The I136V substitution in NaV1.7 alters channel gating and kinetic properties. Each of these changes may contribute to increased excitability of nociceptive dorsal root ganglion neurons, which underlies pain in erythromelalgia. The smaller shift in voltage-dependence of activation of NaV1.7, compared to the other reported cases of inherited erythromelalgia, may contribute to the later age of onset and slower progression of the symptoms reported in association with this mutation.

  3. A 190 mV start-up and 59.2% efficiency CMOS gate boosting voltage doubler charge pump in 0.18 µm standard CMOS process for energy harvesting

    Science.gov (United States)

    Yoshida, Minori; Miyaji, Kousuke

    2018-04-01

    A start-up charge pump circuit for an extremely low input voltage (V IN) is proposed and demonstrated. The proposed circuit uses an inverter level shifter to generate a 2V IN voltage swing to the gate of both main NMOS and PMOS power transistors in a charge pump to reduce the channel resistance. The proposed circuit is fully implemented in a standard 0.18 µm CMOS process, and the measurement result shows that a minimum input voltage of 190 mV is achieved and output power increases by 181% compared with the conventional forward-body-bias scheme at a 300 mV input voltage. The proposed scheme achieves a maximum efficiency of 59.2% when the input voltage is 390 mV and the output current is 320 nA. The proposed circuit is suitable as a start-up circuit in ultralow power energy harvesting power management applications to boost-up from below threshold voltage.

  4. First high-voltage measurements using Ca{sup +} ions at the ALIVE experiment

    Energy Technology Data Exchange (ETDEWEB)

    König, K., E-mail: kkoenig@ikp.tu-darmstadt.de [Technische Universität Darmstadt, Institut für Kernphysik (Germany); Geppert, Ch. [Universität Mainz, Institut für Kernchemie (Germany); Krämer, J.; Maaß, B. [Technische Universität Darmstadt, Institut für Kernphysik (Germany); Otten, E. W. [Universität Mainz, Institut für Physik (Germany); Ratajczyk, T.; Nörtershäuser, W. [Technische Universität Darmstadt, Institut für Kernphysik (Germany)

    2017-11-15

    Many physics experiments depend on accurate high-voltage measurements to determine for example the exact retardation potential of an electron spectrometer as in the KATRIN experiment or the acceleration voltage of the ions at ISOL facilities. Until now only precision high-voltage dividers can be used to measure voltages up to 65 kV with an accuracy of 1 ppm. However, these dividers need frequent calibration and cross-checking and the direct traceability is not given. In this article we will describe the status of an experiment which aims to measure high voltages using collinear laser spectroscopy and which has the potential to provide a high-voltage standard and hence, a calibration source for precision high-voltage dividers on the 1 ppm level.

  5. Current and Voltage Conveyors in Current- and Voltage-Mode Precision Full-Wave Rectifiers

    Directory of Open Access Journals (Sweden)

    J. Koton

    2011-04-01

    Full Text Available In this paper new versatile precision full-wave rectifiers using current and/or voltage conveyors as active elements and two diodes are presented. The performance of these circuit solutions is analysed and compared to the opamp based precision rectifier. To analyze the behavior of the functional blocks, the frequency dependent RMS error and DC transient value are evaluated for different values of input voltage amplitudes. Furthermore, experimental results are given that show the feasibilities of the conveyor based rectifiers superior to the corresponding operational amplifier based topology.

  6. Solution-processed p-type copper(I) thiocyanate (CuSCN) for low-voltage flexible thin-film transistors and integrated inverter circuits

    KAUST Repository

    Petti, Luisa

    2017-03-17

    We report on low operating voltage thin-film transistors (TFTs) and integrated inverters based on copper(I) thiocyanate (CuSCN) layers processed from solution at low temperature on free-standing plastic foils. As-fabricated coplanar bottom-gate and staggered top-gate TFTs exhibit hole-transporting characteristics with average mobility values of 0.0016 cm2 V−1 s−1 and 0.013 cm2 V−1 s−1, respectively, current on/off ratio in the range 102–104, and maximum operating voltages between −3.5 and −10 V, depending on the gate dielectric employed. The promising TFT characteristics enable fabrication of unipolar NOT gates on flexible free-standing plastic substrates with voltage gain of 3.4 at voltages as low as −3.5 V. Importantly, discrete CuSCN transistors and integrated logic inverters remain fully functional even when mechanically bent to a tensile radius of 4 mm, demonstrating the potential of the technology for flexible electronics.

  7. Measurement of magnetically insulated line voltage using a Thomson Parabola Charged Particle Analyser

    International Nuclear Information System (INIS)

    Stanley, T.D.; Stinnett, R.W.

    1981-01-01

    The absence of direct measurements of magnetically insulated line voltage necessitated reliance on inferred voltages based on theoretical calculation and current measurements. This paper presents some of the first direct measurements of magnetically insulated transmission line peak voltages. These measurements were made on the Sandia National Laboratories HydraMITE facility. The peak voltage is measured by observing the energy of negative ions produced at the line cathode and accelerated through the line voltage. The ion energy and the charge-to-mass ratio are measured using the Thomson Parabola mass spectrometry technique. This technique uses parallel E and B fields to deflect the ions. The deflected ions are detected using a microchannel plate coupled to a phosphor screen and photographic film. The Thomson Parabola results are compared to Faraday Cup measurements and to calculated voltages based on current measurements. In addition, the significance of observed positive ions is discussed

  8. On Leakage Current Measured at High Cell Voltages in Lithium-Ion Batteries

    Energy Technology Data Exchange (ETDEWEB)

    Vadivel, Nicole R.; Ha, Seungbum; He, Meinan; Dees, Dennis; Trask, Steve; Polzin, Bryant; Gallagher, Kevin G.

    2017-01-01

    In this study, parasitic side reactions in lithium-ion batteries were examined experimentally using a potentiostatic hold at high cell voltage. The experimental leakage current measured during the potentiostatic hold was compared to the Tafel expression and showed poor agreement with the expected transfer coefficient values, indicating that a more complicated expression could be needed to accurately capture the physics of this side reaction. Here we show that cross-talk between the electrodes is the primary contribution to the observed leakage current after the relaxation of concentration gradients has ceased. This cross-talk was confirmed with experiments using a lithium-ion conducting glass ceramic (LICGC) separator, which has high conductance only for lithium cations. The cells with LICGC separators showed significantly less leakage current during the potentiostatic hold test compared to cells with standard microporous separators where cross-talk is present. In addition, direct-current pulse power tests show an impedance rise for cells held at high potentials and for cells held at high temperatures, which could be attributed to film formation from the parasitic side reaction. Based on the experimental findings, a phenomenological mechanism is proposed for the parasitic side reaction which accounts for cross-talk and mass transport of the decomposition products across the separator.

  9. High Voltage Resistive Divider Based on Cast Microwire in Glass Insulation on 6–24 kV Alternating Current of Commercial Frequency.

    Directory of Open Access Journals (Sweden)

    Juravleov A.

    2008-12-01

    Full Text Available It is presented the analysis and description of the construction of the high voltage resistive divider on the base of cast microwire in glass insulation on 6–24 kV alternating current of commercial frequency. It is presented the procedure of compensation of frequency error during the process of fabrication of divides and results of tests of the sample model of the divider as well.

  10. Illumination and Voltage Dependence of Electrical Characteristics of Au/0.03 Graphene-Doped PVA/n-Si Structures via Capacitance/Conductance-Voltage Measurements

    International Nuclear Information System (INIS)

    Sahar, Alialy; Şlemsettin, Altındal; Ahmet, Kaya; İ, Uslu

    2015-01-01

    Au/n-Si (MS) structures with a high dielectric interlayer (0.03 graphene-doped PVA) are fabricated to investigate the illumination and voltage effects on electrical and dielectric properties by using capacitance-voltage (C-V) and conductance-voltage (G/ω-V) measurements at room temperature and at 1 MHz. Some of the main electrical parameters such as concentration of doping atoms (N D ), barrier height (ϕ B (C - V)), depletion layer width (W D ) and series resistance (R s ) show fairly large illumination dispersion. The voltage-dependent profile of surface states (N ss ) and resistance of the structure (R i ) are also obtained by using the dark-illumination capacitance (C dark -C ill ) and Nicollian-Brews methods, respectively. For a clear observation of changes in electrical parameters with illumination, the values of N D , W D , ϕ B (C - V) and R s are drawn as a function of illumination intensity. The values of N D and W D change almost linearly with illumination intensity. On the other hand, R s decreases almost exponentially with increasing illumination intensity whereas ϕ B (C - V) increases. The experimental results suggest that the use of a high dielectric interlayer (0.03 graphene-doped PVA) considerably passivates or reduces the magnitude of the surface states. The large change or dispersion in main electrical parameters can be attributed to generation of electron-hole pairs in the junction under illumination and to a good light absorption. All of these experimental results confirm that the fabricated Au/0.03 graphene-doped PVA/n-Si structure can be used as a photodiode or a capacitor in optoelectronic applications. (paper)

  11. Performance evaluation of wideband bio-impedance spectroscopy using constant voltage source and constant current source

    International Nuclear Information System (INIS)

    Mohamadou, Youssoufa; Oh, Tong In; Wi, Hun; Sohal, Harsh; Farooq, Adnan; Woo, Eung Je; McEwan, Alistair Lee

    2012-01-01

    Current sources are widely used in bio-impedance spectroscopy (BIS) measurement systems to maximize current injection for increased signal to noise while keeping within medical safety specifications. High-performance current sources based on the Howland current pump with optimized impedance converters are able to minimize stray capacitance of the cables and setup. This approach is limited at high frequencies primarily due to the deteriorated output impedance of the constant current source when situated in a real measurement system. For this reason, voltage sources have been suggested, but they require a current sensing resistor, and the SNR reduces at low impedance loads due to the lower current required to maintain constant voltage. In this paper, we compare the performance of a current source-based BIS and a voltage source-based BIS, which use common components. The current source BIS is based on a Howland current pump and generalized impedance converters to maintain a high output impedance of more than 1 MΩ at 2 MHz. The voltage source BIS is based on voltage division between an internal current sensing resistor (R s ) and an external sample. To maintain high SNR, R s is varied so that the source voltage is divided more or less equally. In order to calibrate the systems, we measured the transfer function of the BIS systems with several known resistor and capacitor loads. From this we may estimate the resistance and capacitance of biological tissues using the least-squares method to minimize error between the measured transimpedance excluding the system transfer function and that from an impedance model. When tested on realistic loads including discrete resistors and capacitors, and saline and agar phantoms, the voltage source-based BIS system had a wider bandwidth of 10 Hz to 2.2 MHz with less than 1% deviation from the expected spectra compared to more than 10% with the current source. The voltage source also showed an SNR of at least 60 dB up to 2.2 MHz

  12. Three phase voltage measurements with simple open air sensors

    NARCIS (Netherlands)

    Heesch, van E.J.M.; Caspers, R.; Gulickx, P.F.M.; Jacobs, G.A.P.; Kersten, W.F.J.; Laan, van der P.C.T.

    1991-01-01

    A low cost, easy to install high-voltage measuring system is described for open air substations and overhead lines. Based on the Differentiating/Integrating (D/I) principle, three free-standing capacitive pickup electrodes are used to sense the three phase to ground voltages. Apart from the

  13. IBM-PC based high voltage controller [Paper No.: L7

    International Nuclear Information System (INIS)

    Mondal, N.K.; Kalmani, S.D.

    1993-01-01

    A simple IBM-PC/XT based high voltage controller is designed for C.A.E.N. high voltage supply unit, which is being used for testing the prototype detector for future accelerator experiment. The high voltage output of the supply unit can be remotely programmed. The V-set Lemo connectors at the rear panel provides the remote control facility. Similarly V-mon and I-mon can be used for remotely monitoring the voltage set and the current drawn from the supply unit. The controller described here sets the high voltage through V-set and monitors the voltage set, through V-mon at a pre-determined time interval. The monitoring is a background job and is done as an interrupt service routine of IRQ3. A simple menu driven software package used is written in Q-Basic and MASM. (author). 1 fig

  14. Accurate reconstruction of the jV-characteristic of organic solar cells from measurements of the external quantum efficiency

    Science.gov (United States)

    Meyer, Toni; Körner, Christian; Vandewal, Koen; Leo, Karl

    2018-04-01

    In two terminal tandem solar cells, the current density - voltage (jV) characteristic of the individual subcells is typically not directly measurable, but often required for a rigorous device characterization. In this work, we reconstruct the jV-characteristic of organic solar cells from measurements of the external quantum efficiency under applied bias voltages and illumination. We show that it is necessary to perform a bias irradiance variation at each voltage and subsequently conduct a mathematical correction of the differential to the absolute external quantum efficiency to obtain an accurate jV-characteristic. Furthermore, we show that measuring the external quantum efficiency as a function of voltage for a single bias irradiance of 0.36 AM1.5g equivalent sun provides a good approximation of the photocurrent density over voltage curve. The method is tested on a selection of efficient, common single-junctions. The obtained conclusions can easily be transferred to multi-junction devices with serially connected subcells.

  15. Diagnostic method for measuring plasma-induced voltages on the PBX-M [Princeton Beta Experiment-Modified] stabilizing shell

    International Nuclear Information System (INIS)

    Kugel, H.W.; Okabayashi, M.; Schweitzer, S.

    1990-07-01

    The Princeton Beta Experiment-Modified (PBX-M) has a close-fitting conducting, passive plate, stabilizing shell which nearly surrounds highly indented, bean-shaped plasmas. The proximity of this electrically isolated shell to a large fraction of the plasma surface allows measurements similar to previous work on other tokamaks using floating probes and limiters. Measurements were performed to characterize the plasma-induced voltages on the PBX-M passive plate stabilizing shell during high-β plasmas. Voltage differences were measured between the respective passive plate toroidal and poloidal gaps, the respective passive plates and the vessel, and an outer poloidal graphite limiter and its passive plate. The calibration and qualification testing procedures are discussed. The initial measurements found that the largest voltages were observed at plasma start-up and at the plasma current disruption and exhibited characteristics depending on operating conditions. The highest voltages observed have been at disruption and were less than 2 kV. 9 refs., 5 figs

  16. High-voltage picoamperemeter

    Energy Technology Data Exchange (ETDEWEB)

    Bugl, Andrea; Ball, Markus; Boehmer, Michael; Doerheim, Sverre; Hoenle, Andreas; Konorov, Igor [Technische Universitaet Muenchen, Garching (Germany); Ketzer, Bernhard [Technische Universitaet Muenchen, Garching (Germany); Helmholtz-Institut fuer Strahlen- und Kernphysik, Bonn (Germany)

    2014-07-01

    Current measurements in the nano- and picoampere region on high voltage are an important tool to understand charge transfer processes in micropattern gas detectors like the Gas Electron Multiplier (GEM). They are currently used to e.g. optimize the field configuration in a multi-GEM stack to be used in the ALICE TPC after the upgrade of the experiment during the 2nd long shutdown of the LHC. Devices which allow measurements down to 1pA at high voltage up to 6 kV have been developed at TU Muenchen. They are based on analog current measurements via the voltage drop over a switchable shunt. A microcontroller collects 128 digital ADC values and calculates their mean and standard deviation. This information is sent with a wireless transmitting unit to a computer and stored in a root file. A nearly unlimited number of devices can be operated simultaneously and read out by a single receiver. The results can also be displayed on a LCD directly at the device. Battery operation and the wireless readout are important to protect the user from any contact to high voltage. The principle of the device is explained, and systematic studies of their properties are shown.

  17. Bias voltage dependence of tunneling magnetoresistance in granular C60–Co films with current-perpendicular-to-plane geometry

    International Nuclear Information System (INIS)

    Sakai, Seiji; Mitani, Seiji; Matsumoto, Yoshihiro; Entani, Shiro; Avramov, Pavel; Ohtomo, Manabu; Naramoto, Hiroshi; Takanashi, Koki

    2012-01-01

    Voltage-dependence of the tunneling magnetoresistance effect in the granular C 60 –Co films has been investigated for the samples with the current-perpendicular-to-plane geometry. The transport measurements under this geometry demonstrate that the granular C 60 –Co films show an unusual exponential bias voltage dependence of the magnetoresistance ratio down to zero voltage. Small characteristic energies of less than 10's meV are derived from the temperature dependences of the characteristic voltage in the exponential relationship. Considering the magnitudes of the voltage drop between Co nanoparticles and also the effect of cotunneling on the energy values, the characteristic energies for the voltage-induced degradation of the spin polarization are found to show a satisfactory agreement with that for the thermally-induced one. It can be reasonably expected that the onset of magnetic disorder to the localized d-electron spins at the interface region of the C 60 -based matrix (C 60 –Co compound) with Co nanoparticles leading to the unusual voltage and temperature dependence of the magnetoresistance ratio and the spin polarization at low temperatures. - Highlights: ► Unusual voltage dependence of the TMR effect in granular C 60 –Co films is studied. ► Linear temperature-characteristic voltage dependence in the MR–V relationship. ► Spin-flip scattering by the exchange-coupled d-electron spins at the interface.

  18. Characteristic of TPF-I Current Signals

    International Nuclear Information System (INIS)

    Kunamaspakorn, T.; Poolyarat, N.; Picha, R.; Promping, J.; Onjun, T.

    2014-01-01

    Thailand Plasma Focus I (TPF-I) is a dense plasma focus device which has been built and developed as a collaborative project among TINT, SIIT, and TU as a radiation source for academic research. This prototype device is powered by a 30 μF capacitor bank, charged at 15 kV. In this work, we assembled a Rogowski coils, which was used for measuring high speed current pulse, to capture current signals from TPF-I. The signals were then compared with the simulation results from Lee model code and found to be in good agreement. The current development status of the TPF-I will also be presented.

  19. Transport systems of Ventricaria ventricosa: I/V analysis of both membranes in series as a function of [K(+)](o).

    Science.gov (United States)

    Beilby, M J; Bisson, M A

    1999-09-01

    The current-voltage (I/V) profiles of Ventricaria (formerly Valonia) membranes were measured at a range of external potassium concentrations, [K(+)](o), from 0.1 to 100 mm. The conductance-voltage (G/V) characteristics were computed to facilitate better resolution of the profile change with time after exposure to different [K(+)](o). The resistance-voltage (R/V) characteristics were computed to attempt resolution of plasmalemma and tonoplast. Four basic electrophysiological stages emerged: (1) Uniform low resistance between -60 and +60 mV after the cell impalement. (2) High resistance between +50 and +150 for [K(+)](o) from 0.1 to 1.0 mm and hypotonic media. (3) High resistance between -150 and -20 mV for [K(+)](o) of 10 mm (close to natural seawater) and hypertonic media. (4) High resistance between -150 and +170 mV at [K(+)](o) of 100 mm. The changes between these states were slow, requiring minutes to hours and sometimes exhibiting spontaneous oscillations of the membrane p.d. (potential difference). Our analysis of the I/V data supports a previous hypothesis, that Ventricaria tonoplast is the more resistive membrane containing a pump, which transports K(+) into the vacuole to regulate turgor. We associate state (1) with the plasmalemma conductance being dominant and the K(+) pump at the tonoplast short-circuited probably by a K(+) channel, state (2) with the K(+) pump "off" or short-circuited at p.d.s more negative than +50 mV, state (3) with the K(+) pump "on, " and state (4) with the pump dominant, but affected by high K(+). A model for the Ventricaria membrane system is proposed.

  20. I-V Characteristics of PtxCo1−x (x = 0.2, 0.5, and 0.7 Thin Films

    Directory of Open Access Journals (Sweden)

    M. Erkovan

    2013-01-01

    Full Text Available Three different chemical ratios of PtxCo1−x thin films were grown on p-type native oxide Si (100 by Magneto Sputtering System with cosputtering technique at 350°C temperature to investigate electrical prosperities. X-ray photoelectron spectroscopy analysis technique was used to specify chemical ratios of these films. The current-voltage (I-V measurements of metal-semiconductor (MS Schottky diodes were carried out at room temperature. From the I-V analysis of the samples, ideality factor (n, barrier height (ϕ, and contact resistance values were determined by using thermionic emission (TE theory. Some important parameters such as barrier height, ideality factor, and serial resistance were calculated from the I-V characteristics based on thermionic emission mechanism. The ideality factors of the samples were not much greater than unity, and the serial resistances of the samples were also very low.

  1. High-voltage measurements on the 5 ppm relative uncertainty level with collinear laser spectroscopy

    Science.gov (United States)

    Krämer, J.; König, K.; Geppert, Ch; Imgram, P.; Maaß, B.; Meisner, J.; Otten, E. W.; Passon, S.; Ratajczyk, T.; Ullmann, J.; Nörtershäuser, W.

    2018-04-01

    We present the results of high-voltage collinear laser spectroscopy measurements on the 5 ppm relative uncertainty level using a pump and probe scheme at the 4s ^2S1/2 → 4p ^2P3/2 transition of {\\hspace{0pt}}40Ca+ involving the 3d ^2D5/2 metastable state. With two-stage laser interaction and a reference measurement we can eliminate systematic effects such as differences in the contact potentials due to different electrode materials and thermoelectric voltages, and the unknown starting potential of the ions in the ion source. Voltage measurements were performed between  -5 kV and  -19 kV and parallel measurements with stable high-voltage dividers calibrated to 5 ppm relative uncertainty were used as a reference. Our measurements are compatible with the uncertainty limits of the high-voltage dividers and demonstrate an unprecedented (factor of 20) increase in the precision of direct laser-based high-voltage measurements.

  2. DAQ system for low density plasma parameters measurement

    International Nuclear Information System (INIS)

    Joshi, Rashmi S.; Gupta, Suryakant B.

    2015-01-01

    In various cases where low density plasmas (number density ranges from 1E4 to 1E6 cm -3 ) exist for example, basic plasma studies or LEO space environment measurement of plasma parameters becomes very critical. Conventional tip (cylindrical) Langmuir probes often result into unstable measurements in such lower density plasma. Due to larger surface area, a spherical Langmuir probe is used to measure such lower plasma densities. Applying a sweep voltage signal to the probe and measuring current values corresponding to these voltages gives V-I characteristics of plasma which can be plotted on a digital storage oscilloscope. This plot is analyzed for calculating various plasma parameters. The aim of this paper is to measure plasma parameters using a spherical Langmuir probe and indigenously developed DAQ system. DAQ system consists of Keithley source-meter and a host system connected by a GPIB interface. An online plasma parameter diagnostic system is developed for measuring plasma properties for non-thermal plasma in vacuum. An algorithm is developed using LabVIEW platform. V-I characteristics of plasma are plotted with respect to different filament current values and different locations of Langmuir probe with reference to plasma source. V-I characteristics is also plotted for forward and reverse voltage sweep generated programmatically from the source meter. (author)

  3. Power cables with extruded insulation and their accessories for rated voltages from 1 kV (Um = 1,2 kV) up to 30 kV (Um = 36 kV) : Part 2: cables for rated voltages from 6 kV (Um = 7,2 kV) up to 30 kV (Um = 36 kV)

    CERN Document Server

    International Electrotechnical Commission. Geneva

    2005-01-01

    Power cables with extruded insulation and their accessories for rated voltages from 1 kV (Um = 1,2 kV) up to 30 kV (Um = 36 kV) : Part 2: cables for rated voltages from 6 kV (Um = 7,2 kV) up to 30 kV (Um = 36 kV)

  4. Development and use of 60 kV, and 150 kV floating deck modulators for high voltage protection of multi-megawatt ion beam accelerators

    International Nuclear Information System (INIS)

    Barber, G.C.; Ponte, N.S.; Schilling, G.

    1977-01-01

    Extraction currents of 60 A at 40 kV have been produced by utilizing a 60 kV floating deck modulator interfaced to a high voltage power supply. The modulator is operated in a series mode to repetitively pulse power to the ion beam accelerator. Current monitoring and other protective circuits provide interrupt commands to the series switch tube when faults occur. The constant current characteristics of the water cooled tetrode and the rapid response of the protective circuits effectively limit the fault energy to the ion source. Three of the 60 kV decks have been modified and stacked in a series configuration to supply 150 kV, 50 A pulses. This system supplies power for development of higher-energy multi-grid sources. In this system attention has been focused on forced voltage sharing of the three decks and on protective circuits for fault conditions. All control signal processing and conditioning is performed at ground level. Fiber optic links are used to interface with the high potential associated with the floating decks. A shunt modulator incorporated with this system provides regulation of the voltage to the ion source gradient grid. Future modulator development includes a system to deliver 100 A at 80 kV

  5. Differential-output B-dot and D-dot monitors for current and voltage measurements on a 20-MA, 3-MV pulsed-power accelerator

    Directory of Open Access Journals (Sweden)

    T. C. Wagoner

    2008-10-01

    signals from a pair are not combined in a balun; they are instead numerically processed for common-mode-noise rejection after digitization. All the current monitors are calibrated on a 76-cm-diameter axisymmetric radial transmission line that is driven by a 10-kA current pulse. The reference current is measured by a current-viewing resistor (CVR. The stack voltage monitors are also differential-output gauges, consisting of one 1.8-cm-diameter D-dot sensor and one null sensor. Hence, each voltage monitor is also a differential detector with two output signals, processed as described above. The voltage monitors are calibrated in situ at 1.5 MV on dedicated accelerator shots with a short-circuit load. Faraday’s law of induction is used to generate the reference voltage: currents are obtained from calibrated outer-MITL B-dot monitors, and inductances from the system geometry. In this way, both current and voltage measurements are traceable to a single CVR. Dependable and consistent measurements are thus obtained with this system of calibrated diagnostics. On accelerator shots that deliver 22 MA to a low-impedance z-pinch load, the peak lineal current densities at the stack, outer-MITL, and inner-MITL monitor locations are 0.5, 1, and 58  MA/m, respectively. On such shots the peak currents measured at these three locations agree to within 1%.

  6. Charge Gain, Voltage Gain, and Node Capacitance of the SAPHIRA Detector Pixel by Pixel

    Science.gov (United States)

    Pastrana, Izabella M.; Hall, Donald N. B.; Baker, Ian M.; Jacobson, Shane M.; Goebel, Sean B.

    2018-01-01

    The University of Hawai`i Institute for Astronomy has partnered with Leonardo (formerly Selex) in the development of HgCdTe linear mode avalanche photodiode (L-APD) SAPHIRA detectors. The SAPHIRA (Selex Avalanche Photodiode High-speed Infra-Red Array) is ideally suited for photon-starved astronomical observations, particularly near infrared (NIR) adaptive optics (AO) wave-front sensing. I have measured the stability, and linearity with current, of a 1.7-um (10% spectral bandpass) infrared light emitting diode (IR LED) used to illuminate the SAPHIRA and have then utilized this source to determine the charge gain (in e-/ADU), voltage gain (in uV/ADU), and node capacitance (in fF) for each pixel of the 320x256@24um SAPHIRA. These have previously only been averages over some sub-array. Determined from the ratio of the temporal averaged signal level to variance under constant 1.7-um LED illumination, I present the charge gain pixel-by-pixel in a 64x64 sub-array at the center of the active area of the SAPHIRA (analyzed separately as four 32x32 sub-arrays) to be about 1.6 e-/ADU (σ=0.5 e-/ADU). Additionally, the standard technique of varying the pixel reset voltage (PRV) in 10 mV increments and recording output frames for the same 64x64 subarray found the voltage gain per pixel to be about 11.7 uV/ADU (σ=0.2 uV/ADU). Finally, node capacitance was found to be approximately 23 fF (σ=6 fF) utilizing the aforementioned charge and voltage gain measurements. I further discuss the linearity measurements of the 1.7-um LED used in the charge gain characterization procedure.

  7. A measurement method for determination of dc internal resistance of batteries and supercapacitors

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Shuhong; Wu, Feng [Department of Materials Science, Beijing Science and Technology University, Beijing 100081 (China); Yang, Liuxiang; Gao, Lijun [Department of Chemistry, NanChang University, JiangXi 330031 (China); Burke, Andrew F. [Institute of Transportation, University of California, Davis, CA 95616 (United States)

    2010-02-15

    Internal resistance is an importance parameter determining the power performance of a battery or supercapacitor. An 8.5 Ah Li-ion battery and a 350 F supercapacitor were tested as examples to validate the measurement method of dc internal resistance. Voltage data were taken at 10 ms, 2 s and 30 s after the current interruption or pulse. The ac resistances at 1 kHz of the battery and supercapacitor were also measured for comparison with the dc values. Based on these tests, it is proposed that the dc internal resistance of the battery and supercapacitor be obtained from {delta}V/{delta}I where the {delta}V is the voltage change after the current interruption, and {delta}I means current change from I to 0. When the voltage change at 10 ms or less is selected, the resistance corresponds to the Ohmic resistance of the device. (author)

  8. A rugged 650 V SOI-based high-voltage half-bridge IGBT gate driver IC for motor drive applications

    Science.gov (United States)

    Hua, Qing; Li, Zehong; Zhang, Bo; Chen, Weizhong; Huang, Xiangjun; Feng, Yuxiang

    2015-05-01

    This paper proposes a rugged high-voltage N-channel insulated gate bipolar transistor (IGBT) gate driver integrated circuit. The device integrates a high-side and a low-side output stages on a single chip, which is designed specifically for motor drive applications. High-voltage level shift technology enables the high-side stage of this device to operate up to 650 V. The logic inputs are complementary metal oxide semiconductor (CMOS)/transistor transistor logic compatible down to 3.3 V. Undervoltage protection functionality with hysteresis characteristic has also been integrated to enhance the device reliability. The device is fabricated in a 1.0 μm, 650 V high-voltage bipolar CMOS double-diffused metal oxide semiconductor (BCD) on silicon-on-insulator (SOI) process. Deep trench dielectric isolation technology is employed to provide complete electrical isolation with advantages such as reduced parasitic effects, excellent noise immunity and low leakage current. Experimental results show that the isolation voltage of this device can be up to approximately 779 V at 25°C, and the leakage current is only 5 nA at 650 V, which is 15% higher and 67% lower than the conventional ones. In addition, it delivers an excellent thermal stability and needs very low quiescent current and offers a high gate driver capability which is needed to adequately drive IGBTs that have large input capacitances.

  9. Direct DC 10 V comparison between two programmable Josephson voltage standards made of niobium nitride (NbN)-based and niobium (Nb)-based Josephson junctions

    Science.gov (United States)

    Solve, S.; Chayramy, R.; Maruyama, M.; Urano, C.; Kaneko, N.-H.; Rüfenacht, A.

    2018-04-01

    BIPM’s new transportable programmable Josephson voltage standard (PJVS) has been used for an on-site comparison at the National Metrology Institute of Japan (NMIJ) and the National Institute of Advanced Industrial Science and Technology (AIST) (NMIJ/AIST, hereafter called just NMIJ unless otherwise noted). This is the first time that an array of niobium-based Josephson junctions with amorphous niobium silicon Nb x Si1-x barriers, developed by the National Institute of Standards and Technology4 (NIST), has been directly compared to an array of niobium nitride (NbN)-based junctions (developed by the NMIJ in collaboration with the Nanoelectronics Research Institute (NeRI), AIST). Nominally identical voltages produced by both systems agreed within 5 parts in 1012 (0.05 nV at 10 V) with a combined relative uncertainty of 7.9  ×  10-11 (0.79 nV). The low side of the NMIJ apparatus is, by design, referred to the ground potential. An analysis of the systematic errors due to the leakage current to ground was conducted for this ground configuration. The influence of a multi-stage low-pass filter installed at the output measurement leads of the NMIJ primary standard was also investigated. The number of capacitances in parallel in the filter and their insulation resistance have a direct impact on the amplitude of the systematic voltage error introduced by the leakage current, even if the current does not necessarily return to ground. The filtering of the output of the PJVS voltage leads has the positive consequence of protecting the array from external sources of noise. Current noise, when coupled to the array, reduces the width or current range of the quantized voltage steps. The voltage error induced by the leakage current in the filter is an order of magnitude larger than the voltage error in the absence of all filtering, even though the current range of steps is significantly decreased without filtering.

  10. Nonlinear I-V characteristics of doped SnO{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Dhage, S.R.; Choube, Vandana; Ravi, V

    2004-07-15

    When tin oxide is doped with Sb{sub 2}O{sub 3} and CoO, it shows highly nonlinear current (I)-voltage (V) characteristics. Addition of CoO leads to creation of oxygen vacancies and helps in sintering of SnO{sub 2}. Antimony oxide acts as a donor and increases the conductivity. The results are nearly same when antimony oxide is replaced by tantalum oxide. The grain size of these sintered ceramics varies from 5 to 7 {mu}m and the grain boundary barrier height (PHI{sub B}) is in the range of 0.5 eV. The observed nonlinear coefficient ({alpha}) is 25 and 27 for antimony and tantalum oxide, respectively and the breakdown field is in the range of 1250 V cm{sup -1}.

  11. Sheath and arc-column voltages in high-pressure arc discharges

    International Nuclear Information System (INIS)

    Benilov, M S; Benilova, L G; Li Heping; Wu Guiqing

    2012-01-01

    Electrical characteristics of a 1 cm-long free-burning atmospheric-pressure argon arc are calculated by means of a model taking into account the existence of a near-cathode space-charge sheath and the discrepancy between the electron and heavy-particle temperatures in the arc column. The computed arc voltage exhibits a variation with the arc current I similar to the one revealed by the experiment and exceeds experimental values by no more than approximately 2 V in the current range 20-175 A. The sheath contributes about two-thirds or more of the arc voltage. The LTE model predicts a different variation of the arc voltage with I and underestimates the experimental values appreciably for low currents but by no more than approximately 2 V for I ≳ 120 A. However, the latter can hardly be considered as a proof of unimportance of the space-charge sheath at high currents: the LTE model overestimates both the resistance of the bulk of the arc column and the resistance of the part of the column that is adjacent to the cathode, and this overestimation to a certain extent compensates for the neglect of the voltage drop in the sheath. Furthermore, if the latter resistance were evaluated in the framework of the LTE model in an accurate way, then the overestimation would be still much stronger and the obtained voltage would significantly exceed those observed in the experiment.

  12. Modification of Modulating Anode Voltage Supply of Klystron for PEFP 20 MeV Linac

    International Nuclear Information System (INIS)

    Kim, Dae Il; Kwon, Hyeok Jung; Kim, Han Sung; Cho, Yong Sub

    2011-01-01

    The klystron (TH2089F, THALES) for PEFP 20MeV proton linear accelerator has a triode type electron gun and the modulating anode voltage should be supplied. The klystron has gone through some modification in the modulating anode voltage supply circuit. Formerly, the mod-anode voltage was supplied by using the tetrode-controlled voltage divider. This system requires addition power supply for the tetrode and the grid control circuit. Recently we modified the mod-anode supply from the tetrode-controlled voltage divider to a resistive voltage divider. The resistors for the previous voltage divider were installed at a supporter with high voltage bushing structure next to the klystron. In the previous system, the resistors were exposed to the air and their size was very bulky, length of which was about 1m long. To reduce the space occupied by the voltage divider and to improve the electrical insulation performance, the voltage dividing resistors were moved into the oil tank of the klystron. During the operation of the 20 MeV linac, the klystron parameters were measured. In this paper, the modification of the voltage divider and the operational characteristics of the klystron with modified voltage divider circuit are presented

  13. Galvanically Decoupled Current Source Modules for Multi-Channel Bioimpedance Measurement Systems

    Directory of Open Access Journals (Sweden)

    Roman Kusche

    2017-10-01

    Full Text Available Bioimpedance measurements have become a useful technique in the past several years in biomedical engineering. Especially, multi-channel measurements facilitate new imaging and patient monitoring techniques. While most instrumentation research has focused on signal acquisition and signal processing, this work proposes the design of an excitation current source module that can be easily implemented in existing or upcoming bioimpedance measurement systems. It is galvanically isolated to enable simultaneous multi-channel bioimpedance measurements with a very low channel-coupling. The system is based on a microcontroller in combination with a voltage-controlled current source circuit. It generates selectable sinusoidal excitation signals between 0.12 and 1.5 mA in a frequency range from 12 to 250 kHz, whereas the voltage compliance range is ±3.2 V. The coupling factor between two current sources, experimentally galvanically connected with each other, is measured to be less than −48 dB over the entire intended frequency range. Finally, suggestions for developments in the future are made.

  14. A compact 100 kV high voltage glycol capacitor.

    Science.gov (United States)

    Wang, Langning; Liu, Jinliang; Feng, Jiahuai

    2015-01-01

    A high voltage capacitor is described in this paper. The capacitor uses glycerol as energy storage medium, has a large capacitance close to 1 nF, can hold off voltages of up to 100 kV for μs charging time. Allowing for low inductance, the capacitor electrode is designed as coaxial structure, which is different from the common structure of the ceramic capacitor. With a steady capacitance at different frequencies and a high hold-off voltage of up to 100 kV, the glycol capacitor design provides a potential substitute for the ceramic capacitors in pulse-forming network modulator to generate high voltage pulses with a width longer than 100 ns.

  15. On the Transmission Line Pulse Measurement Technique

    OpenAIRE

    X. Rodriguez; M. Eduardo; M. Harington

    2015-01-01

    Transmission Line Pulse is a short pulse (25ns to 150ns) measurement of the current-voltage (I/V) characteristics of the ESD protection built into an integrated circuit. The short TLP pulses are used to simulate the short ESD pulse threats and integrated circuit must tolerate without being damaged. In this work the fundamental principles of how the TLP pulse is generated and used to create I-V characteristic plots will be explored. The measurement will be then used to characterize the I-V cha...

  16. 50V All-PMOS Charge Pumps Using Low-Voltage Capacitors

    KAUST Repository

    Emira, Ahmed

    2012-10-06

    In this work, two high-voltage charge pumps are introduced. In order to minimize the area of the pumping capacitors, which dominates the overall area of the charge pump, high density capacitors have been utilized. Nonetheless, these high density capacitors suffer from low breakdown voltage which is not compatible with the targeted high voltage application. To circumvent the breakdown limitation, a special clocking scheme is used to limit the maximum voltage across any pumping capacitor. The two charge pump circuits were fabricated in a 0:6m CMOS technology with poly0-poly1 capacitors. The output voltage of the two charge pumps reached 42:8V and 51V while the voltage across any capacitor did not exceed the value of the input voltage. Compared to other designs reported in the literature, the proposed charge pump provides the highest output voltage which makes it more suitable for tuning MEMS devices.

  17. 50V All-PMOS Charge Pumps Using Low-Voltage Capacitors

    KAUST Repository

    Emira, Ahmed; AbdelGhany, M.; Elsayed, M.; Elshurafa, Amro M.; Sedky, S.; Salama, Khaled N.

    2012-01-01

    In this work, two high-voltage charge pumps are introduced. In order to minimize the area of the pumping capacitors, which dominates the overall area of the charge pump, high density capacitors have been utilized. Nonetheless, these high density capacitors suffer from low breakdown voltage which is not compatible with the targeted high voltage application. To circumvent the breakdown limitation, a special clocking scheme is used to limit the maximum voltage across any pumping capacitor. The two charge pump circuits were fabricated in a 0:6m CMOS technology with poly0-poly1 capacitors. The output voltage of the two charge pumps reached 42:8V and 51V while the voltage across any capacitor did not exceed the value of the input voltage. Compared to other designs reported in the literature, the proposed charge pump provides the highest output voltage which makes it more suitable for tuning MEMS devices.

  18. Local anesthetics disrupt energetic coupling between the voltage-sensing segments of a sodium channel.

    Science.gov (United States)

    Muroi, Yukiko; Chanda, Baron

    2009-01-01

    Local anesthetics block sodium channels in a state-dependent fashion, binding with higher affinity to open and/or inactivated states. Gating current measurements show that local anesthetics immobilize a fraction of the gating charge, suggesting that the movement of voltage sensors is modified when a local anesthetic binds to the pore of the sodium channel. Here, using voltage clamp fluorescence measurements, we provide a quantitative description of the effect of local anesthetics on the steady-state behavior of the voltage-sensing segments of a sodium channel. Lidocaine and QX-314 shifted the midpoints of the fluorescence-voltage (F-V) curves of S4 domain III in the hyperpolarizing direction by 57 and 65 mV, respectively. A single mutation in the S6 of domain IV (F1579A), a site critical for local anesthetic block, abolished the effect of QX-314 on the voltage sensor of domain III. Both local anesthetics modestly shifted the F-V relationships of S4 domain IV toward hyperpolarized potentials. In contrast, the F-V curve of the S4 domain I was shifted by 11 mV in the depolarizing direction upon QX-314 binding. These antagonistic effects of the local anesthetic indicate that the drug modifies the coupling between the voltage-sensing domains of the sodium channel. Our findings suggest a novel role of local anesthetics in modulating the gating apparatus of the sodium channel.

  19. The effects of fabrication temperature on current-voltage characteristics and energy efficiencies of quantum dot sensitized ZnOH-GO hybrid solar cells

    International Nuclear Information System (INIS)

    Islam, S. M. Z.; Gayen, Taposh; Tint, Naing; Alfano, Robert; Shi, Lingyan; Seredych, Mykola; Bandosz, Teresa J.

    2014-01-01

    The effects of fabrication temperature are investigated on the performance of CdSe quantum dot (QD)-sensitized hybrid solar cells of the composite material of zinc (hydr)oxide (ZnOH-GO)with 2 wt. % graphite oxide. The current-voltage (I-V) and photo-current measurements show that higher fabrication temperatures yield greater photovoltaic power conversion efficiencies that essentially indicate more efficient solar cells. Two Photon Fluorescence images show the effects of temperature on the internal morphologies of the solar devices based on such materials. The CdSe-QD sensitized ZnOH-GO hybrid solar cells fabricated at 450 °C showing conversion of ∼10.60% under a tungsten lamp (12.1 mW/cm 2 ) are reported here, while using potassium iodide as an electrolyte. The output photocurrent, I (μA) with input power, P (mW/cm 2 ) is found to be superlinear, showing a relation of I = P n , where n = 1.4.

  20. Low voltage stress-induced leakage current and traps in ultrathin oxide (1.2 2.5 nm) after constant voltage stresses

    Science.gov (United States)

    Petit, C.; Zander, D.

    2007-10-01

    It has been shown that the low voltage gate current in ultrathin oxide metal-oxide-semiconductor devices is very sensitive to electrical stresses. Therefore, it can be used as a reliability monitor when the oxide thickness becomes too small for traditional electrical measurements to be used. In this work, we present a study on n-MOSCAP devices at negative gate bias in the direct tunneling (DT) regime. If the low voltage stress-induced leakage current (LVSILC) depends strongly on the low sense voltages, it also depends strongly on the stress voltage magnitude. We show that two LVSILC peaks appear as a function of the sense voltage in the LVSILC region and that their magnitude, one compared to the other, depends strongly on the stress voltage magnitude. One is larger than the other at low stress voltage and smaller at high stress voltage. From our experimental results, different conduction mechanisms are analyzed. To explain LVSILC variations, we propose a model of the conduction through the ultrathin gate oxide based on two distinctly different trap-assisted tunneling mechanisms: inelastic of gate electron (INE) and trap-assisted electron (ETAT).

  1. A high-voltage test for the ATLAS RPC qualification

    CERN Document Server

    Aielli, G; Cardarelli, R; Di Ciaccio, A; Di Simone, A; Liberti, B; Santonico, R

    2004-01-01

    The RPC production sequence for the ATLAS experiment includes a specific test of current absorption at the operating point, which concerns the RPC "gas volumes", namely the bare detectors not yet assembled with the read-out panels and the mechanical support structures. The test, which is carried out at the production site, consists of two phases. The gas volumes are initially conditioned with pure argon, keeping the voltage constant just above the breakdown value of about 2 kV. The final test, performed after the volumes have undergone inner surface varnishing with linseed oil, is based on the measurement of the current-voltage characteristics with the binary operating gas, C//2H//2F//4/i-C//4H//1//0 = 95/5. The results presented here concern 45% of the total foreseen production.

  2. A high-voltage test for the ATLAS RPC qualification

    International Nuclear Information System (INIS)

    Aielli, G.; Camarri, P.; Cardarelli, R.; Di Ciaccio, A.; Di Simone, A.; Liberti, B.; Santonico, R.

    2004-01-01

    The RPC production sequence for the ATLAS experiment includes a specific test of current absorption at the operating point, which concerns the RPC 'gas volumes', namely the bare detectors not yet assembled with the read-out panels and the mechanical support structures. The test, which is carried out at the production site, consists of two phases. The gas volumes are initially conditioned with pure argon, keeping the voltage constant just above the breakdown value of about 2 kV. The final test, performed after the volumes have undergone inner surface varnishing with linseed oil, is based on the measurement of the current-voltage characteristics with the binary operating gas, C2H2F4/i-C4H10=95/5. The results presented here concern 45% of the total foreseen production

  3. An Optimal PR Control Strategy with Load Current Observer for a Three-Phase Voltage Source Inverter

    Directory of Open Access Journals (Sweden)

    Xiaobo Dou

    2015-07-01

    Full Text Available Inverter voltage control is an important task in the operation of a DC/AC microgrid system. To improve the inverter voltage control dynamics, traditional approaches attempt to measure and feedforward the load current, which, however, needs remote measurement with communications in a microgrid system with distributed loads. In this paper, a load current observer (LCO based control strategy, which does not need remote measurement, is proposed for sinusoidal signals tracking control of a three-phase inverter of the microgrid. With LCO, the load current is estimated precisely, acting as the feedforward of the dual-loop control, which can effectively enlarge the stability margin of the control system and improve the dynamic response to load disturbance. Furthermore, multiple PR regulators are applied in this strategy conducted in a stationary  frame to suppress the transient fluctuations and the total harmonic distortion (THD of the output voltage and achieve faster transient performance compared with traditional dual-loop control in a rotating dq0 frame under instantaneous change of various types of load (i.e., balanced load, unbalanced load, and nonlinear load. The parameters of multiple PR regulators are analyzed and selected through the root locus method and the stability of the whole control system is evaluated and analyzed. Finally, the validity of the proposed approach is verified through simulations and a three-phase prototype test system with a TMS320F28335 DSP.

  4. Thermal instability and current-voltage scaling in superconducting fault current limiters

    Energy Technology Data Exchange (ETDEWEB)

    Zeimetz, B [Department of Materials Science and Metallurgy, Cambridge University, Pembroke Street, Cambridge CB1 3QZ (United Kingdom); Tadinada, K [Department of Engineering, Cambridge University, Trumpington Road, Cambridge CB2 1PZ (United Kingdom); Eves, D E [Department of Engineering, Cambridge University, Trumpington Road, Cambridge CB2 1PZ (United Kingdom); Coombs, T A [Department of Engineering, Cambridge University, Trumpington Road, Cambridge CB2 1PZ (United Kingdom); Evetts, J E [Department of Materials Science and Metallurgy, Cambridge University, Pembroke Street, Cambridge CB1 3QZ (United Kingdom); Campbell, A M [Department of Engineering, Cambridge University, Trumpington Road, Cambridge CB2 1PZ (United Kingdom)

    2004-04-01

    We have developed a computer model for the simulation of resistive superconducting fault current limiters in three dimensions. The program calculates the electromagnetic and thermal response of a superconductor to a time-dependent overload voltage, with different possible cooling conditions for the surfaces, and locally variable superconducting and thermal properties. We find that the cryogen boil-off parameters critically influence the stability of a limiter. The recovery time after a fault increases strongly with thickness. Above a critical thickness, the temperature is unstable even for a small applied AC voltage. The maximum voltage and maximum current during a short fault are correlated by a simple exponential law.

  5. 0.45 v and 18 μA/MHz MCU SOC with Advanced Adaptive Dynamic Voltage Control (ADVC

    Directory of Open Access Journals (Sweden)

    Uzi Zangi

    2018-05-01

    Full Text Available An ultra-low-power MicroController Unit System-on-Chip (MCU SOC is described with integrated DC to DC power management and Adaptive Dynamic Voltage Control (ADVC mechanism. The SOC, designed and fabricated in a 40 nm ULP standard CMOS technology, includes the complete Synopsys ARC EM5D core MCU, featuring a full set of DSP instructions and minimizing energy consumption at a wide range of frequencies: 312 K–80 MHz. A number of unique low voltage digital libraries, comprising of approximately 300 logic cells and sequential elements, were used for the MCU SOC design. On-die silicon sensors were utilized to continuously change the operating voltage to optimize power/performance for a given frequency and environmental conditions, and also to resolve yield and life time problems, while operating at low voltages. A First Fail (FFail mechanism, which can be digitally and linearly controlled with up to 8 bits, detects the failing SOC voltage at a given frequency. The core operates between 0.45–1.1 V volts with a direct battery connection for an input voltage of 1.6–3.6 V. Measurement results show that the peak energy efficiency is 18μW/MHz. A comparison to state-of-the-art commercial SOCs is presented, showing a 3–5× improved current/DMIPS (Dhrystone Million Instructions per second compared to the next best chip.

  6. Transport characteristics of Pd Schottky barrier diodes on epitaxial n-GaSb as determined from temperature dependent current–voltage measurements

    Energy Technology Data Exchange (ETDEWEB)

    Venter, A., E-mail: andre.venter@nmmu.ac.za [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa); Murape, D.M.; Botha, J.R. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa); Auret, F.D. [Department of Physics, University of the Pretoria, Lynnwood Road, Pretoria 0002 (South Africa)

    2015-01-01

    The temperature dependent transport characteristics of Pd/n-GaSb:Te Schottky contacts with low and saturating reverse current are investigated by means of current–voltage measurements between 80 K and 320 K. The apparent barrier height and ideality factor increase with a decrease in temperature. Neither thermionic nor thermionic field emission can explain the low temperature characteristics of these diodes. Instead, evidence is presented for barrier inhomogeneity across the metal/semiconductor contact. A plot of the barrier height, ϕ{sub b} vs. 1/2kT revealed a double Gaussian distribution for the barrier height with ϕ{sub b,mean} assuming values of 0.59 eV ± 0.07 (80–140 K) and 0.25 eV ± 0.12 (140–320 K) respectively. - Highlights: • Transport characteristics of Pd/epitaxial n-GaSb:Te SBDs are studied by means of I-V-T measurements. • SBDs have remarkably low and saturating reverse current – of the lowest ever reported for GaSb. • Transport behaviour is explained by considering electronic states present on the GaSb surface. • Evidence is presented for barrier inhomogeneity across the metal-semiconductor contact.

  7. Transport characteristics of Pd Schottky barrier diodes on epitaxial n-GaSb as determined from temperature dependent current–voltage measurements

    International Nuclear Information System (INIS)

    Venter, A.; Murape, D.M.; Botha, J.R.; Auret, F.D.

    2015-01-01

    The temperature dependent transport characteristics of Pd/n-GaSb:Te Schottky contacts with low and saturating reverse current are investigated by means of current–voltage measurements between 80 K and 320 K. The apparent barrier height and ideality factor increase with a decrease in temperature. Neither thermionic nor thermionic field emission can explain the low temperature characteristics of these diodes. Instead, evidence is presented for barrier inhomogeneity across the metal/semiconductor contact. A plot of the barrier height, ϕ b vs. 1/2kT revealed a double Gaussian distribution for the barrier height with ϕ b,mean assuming values of 0.59 eV ± 0.07 (80–140 K) and 0.25 eV ± 0.12 (140–320 K) respectively. - Highlights: • Transport characteristics of Pd/epitaxial n-GaSb:Te SBDs are studied by means of I-V-T measurements. • SBDs have remarkably low and saturating reverse current – of the lowest ever reported for GaSb. • Transport behaviour is explained by considering electronic states present on the GaSb surface. • Evidence is presented for barrier inhomogeneity across the metal-semiconductor contact

  8. Outlook for use of 10 kV voltage in coal mines

    Energy Technology Data Exchange (ETDEWEB)

    Voloshchenko, N.I.; Nabokov, E.P.; Razumnyy, Yu.T.

    1983-01-01

    Based on technical-economic studies of the models of the plans for electricity supply, the economic expediency is shown of comprehensive implementation of measures for transition of high-voltage equipment of the mines to voltage of 10 kV with simultaneous improvement in the permissible power of short circuiting to 150 MV X A. Technical problems were examined which are associated with creation of explosion-safe electrical equipment, corresponding to the new technical requirements for the system of electricity supply of the coal mine.

  9. A 200 mV low leakage current subthreshold SRAM bitcell in a 130 nm CMOS process

    International Nuclear Information System (INIS)

    Bai Na; Lü Baitao

    2012-01-01

    A low leakage current subthreshold SRAM in 130 nm CMOS technology is proposed for ultra low voltage (200 mV) applications. Almost all of the previous subthreshold works ignore the leakage current in both active and standby modes. To minimize leakage, a self-adaptive leakage cut off scheme is adopted in the proposed design without any extra dynamic energy dissipation or performance penalty. Combined with buffering circuit and reconfigurable operation, the proposed design ensures both read and standby stability without deteriorating writability in the subthreshold region. Compared to the referenced subthreshold SRAM bitcell, the proposed bitcell shows: (1) a better critical state noise margin, and (2) smaller leakage current in both active and standby modes. Measurement results show that the proposed SRAM functions well at a 200 mV supply voltage with 0.13 μW power consumption at 138 kHz frequency. (semiconductor integrated circuits)

  10. Two ways to model voltage-current curves of adiabatic MgB2 wires

    International Nuclear Information System (INIS)

    Stenvall, A; Korpela, A; Lehtonen, J; Mikkonen, R

    2007-01-01

    Usually overheating of the sample destroys attempts to measure voltage-current curves of conduction cooled high critical current MgB 2 wires at low temperatures. Typically, when a quench occurs a wire burns out due to massive heat generation and negligible cooling. It has also been suggested that high n values measured with MgB 2 wires and coils are not an intrinsic property of the material but arise due to heating during the voltage-current measurement. In addition, quite recently low n values for MgB 2 wires have been reported. In order to find out the real properties of MgB 2 an efficient computational model is required to simulate the voltage-current measurement. In this paper we go back to basics and consider two models to couple electromagnetic and thermal phenomena. In the first model the magnetization losses are computed according to the critical state model and the flux creep losses are considered separately. In the second model the superconductor resistivity is described by the widely used power law. Then the coupled current diffusion and heat conduction equations are solved with the finite element method. In order to compare the models, example runs are carried out with an adiabatic slab. Both models produce a similar significant temperature rise near the critical current which leads to fictitiously high n values

  11. AC Voltage Control of DC/DC Converters Based on Modular Multilevel Converters in Multi-Terminal High-Voltage Direct Current Transmission Systems

    Directory of Open Access Journals (Sweden)

    Rui Li

    2016-12-01

    Full Text Available The AC voltage control of a DC/DC converter based on the modular multilevel converter (MMC is considered under normal operation and during a local DC fault. By actively setting the AC voltage according to the two DC voltages of the DC/DC converter, the modulation index can be near unity, and the DC voltage is effectively utilized to output higher AC voltage. This significantly decreases submodule (SM capacitance and conduction losses of the DC/DC converter, yielding reduced capital cost, volume, and higher efficiency. Additionally, the AC voltage is limited in the controllable range of both the MMCs in the DC/DC converter; thus, over-modulation and uncontrolled currents are actively avoided. The AC voltage control of the DC/DC converter during local DC faults, i.e., standby operation, is also proposed, where only the MMC connected on the faulty cable is blocked, while the other MMC remains operational with zero AC voltage output. Thus, the capacitor voltages can be regulated at the rated value and the decrease of the SM capacitor voltages after the blocking of the DC/DC converter is avoided. Moreover, the fault can still be isolated as quickly as the conventional approach, where both MMCs are blocked and the DC/DC converter is not exposed to the risk of overcurrent. The proposed AC voltage control strategy is assessed in a three-terminal high-voltage direct current (HVDC system incorporating a DC/DC converter, and the simulation results confirm its feasibility.

  12. Current flow mechanism in Cu{sub 2}O/p-Si heterojunction prepared by chemical method

    Energy Technology Data Exchange (ETDEWEB)

    Serin, T; Guerakar, S; Serin, N; Yildirim, N; Oezyurt Kus, F, E-mail: serin@eng.ankara.edu.t [Department of Engineering Physics, Faculty of Engineering, Ankara University, 06100 Ankara (Turkey)

    2009-11-21

    Cu{sub 2}O thin films were chemically deposited on single-crystal p-Si substrates to form Cu{sub 2}O/p-Si heterojunctions. The structure of the Cu{sub 2}O films was analysed by x-ray diffraction spectroscopy and UV-Vis-NIR transmittance spectra. In order to investigate the dark current transport mechanism in Cu{sub 2}O/p-Si heterojunctions the current-voltage characteristics were measured in the temperature range 120-320 K and capacitance-voltage characteristics at a high frequency of {approx}1 MHz at room temperature. The I-V-T characteristics revealed that the forward current was determined by trap-assisted multi-step tunnelling. The activation energy determined from the saturation current and the junction built-in potential determined from the capacitance-voltage characteristics were about 0.18 eV and 1.10 V at room temperature, respectively.

  13. Method of controlling illumination device based on current-voltage model

    DEFF Research Database (Denmark)

    2013-01-01

    The present invention relates to an illumination device comprising a number of LEDs, means for receiving an input signal, means for generating an activation signal for at least one of the LEDs based on the input signal. The illumination device comprises further means for obtaining the voltage...... and the colorimetric properties of said light emitted by LED. The present invention relates also to a method of controlling and a meted of calibrating such illumination device....... across and current through the LED and the means for generating the activation signal is adapted to generate the activating signal based on the voltage, the current and a current- voltage model related to LED. The current-voltage model defines a relationship between the current, the voltage...

  14. Nonlinear current-voltage characteristics of WO3-x nano-/micro-rods

    Science.gov (United States)

    Shen, Zhenguang; Peng, Zhijian; Zhao, Zengying; Fu, Xiuli

    2018-04-01

    A series of crystalline tungsten oxide nano-/micro-rods with different compositions of WO3, WO2.90, W19O55 (WO2.89) and W18O49 (WO2.72) but identical morphology feature were first prepared. Then, various nanoscaled electrical devices were fabricated from them by micro-fabrication through a focused ion beam technique. Interestingly, the devices from the oxygen-deficient WO3-x display significantly nonlinear current-voltage characteristics. The calculated nonlinear coefficients of the WO2.90, WO2.83, and WO2.72 varistors are 2.52, 3.32 and 4.91, respectively. The breakdown voltage of the WO2.90, WO2.83, and WO2.72 varistors are 1.93, 1.28 and 0.93 V, respectively. Such WO3-x nano-varistors might be promising for low-voltage electrical/electronic devices.

  15. Current-voltage characteristics of bulk heterojunction organic solar cells: connection between light and dark curves

    Energy Technology Data Exchange (ETDEWEB)

    Boix, Pablo P.; Guerrero, Antonio; Garcia-Belmonte, Germa; Bisquert, Juan [Photovoltaic and Optoelectronic Devices Group, Departament de Fisica, Universitat Jaume I, ES-12071 Castello (Spain); Marchesi, Luis F. [Laboratorio Interdisciplinar de, Eletroquimica e Ceramica (LIEC), Universidade Federal de Sao Carlos (Brazil); Photovoltaic and Optoelectronic Devices Group, Departament de Fisica, Universitat Jaume I, ES-12071 Castello (Spain)

    2011-11-15

    A connection is established between recombination and series resistances extracted from impedance spectroscopy and current-voltage curves of polythiophene:fullerene organic solar cells. Recombination is shown to depend exclusively on the (Fermi level) voltage, which allows construction of the current-voltage characteristics in any required conditions based on a restricted set of measurements. The analysis highlights carrier recombination current as the determining mechanism of organic solar cell performance. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  16. Shunt resistance and saturation current determination in CdTe and CIGS solar cells. Part 2: application to experimental IV measurements and comparison with other methods

    Science.gov (United States)

    Rangel-Kuoppa, Victor-Tapio; Albor-Aguilera, María-de-Lourdes; Hérnandez-Vásquez, César; Flores-Márquez, José-Manuel; Jiménez-Olarte, Daniel; Sastré-Hernández, Jorge; González-Trujillo, Miguel-Ángel; Contreras-Puente, Gerardo-Silverio

    2018-04-01

    In this Part 2 of this series of articles, the procedure proposed in Part 1, namely a new parameter extraction technique of the shunt resistance (R sh ) and saturation current (I sat ) of a current-voltage (I-V) measurement of a solar cell, within the one-diode model, is applied to CdS-CdTe and CIGS-CdS solar cells. First, the Cheung method is used to obtain the series resistance (R s ) and the ideality factor n. Afterwards, procedures A and B proposed in Part 1 are used to obtain R sh and I sat . The procedure is compared with two other commonly used procedures. Better accuracy on the simulated I-V curves used with the parameters extracted by our method is obtained. Also, the integral percentage errors from the simulated I-V curves using the method proposed in this study are one order of magnitude smaller compared with the integral percentage errors using the other two methods.

  17. A novel frequency analysis method for assessing K(ir)2.1 and Na (v)1.5 currents.

    Science.gov (United States)

    Rigby, J R; Poelzing, S

    2012-04-01

    Voltage clamping is an important tool for measuring individual currents from an electrically active cell. However, it is difficult to isolate individual currents without pharmacological or voltage inhibition. Herein, we present a technique that involves inserting a noise function into a standard voltage step protocol, which allows one to characterize the unique frequency response of an ion channel at different step potentials. Specifically, we compute the fast Fourier transform for a family of current traces at different step potentials for the inward rectifying potassium channel, K(ir)2.1, and the channel encoding the cardiac fast sodium current, Na(v)1.5. Each individual frequency magnitude, as a function of voltage step, is correlated to the peak current produced by each channel. The correlation coefficient vs. frequency relationship reveals that these two channels are associated with some unique frequencies with high absolute correlation. The individual IV relationship can then be recreated using only the unique frequencies with magnitudes of high absolute correlation. Thus, this study demonstrates that ion channels may exhibit unique frequency responses.

  18. Generalized Bohm’s criterion and negative anode voltage fall in electric discharges

    Energy Technology Data Exchange (ETDEWEB)

    Londer, Ya. I.; Ul’yanov, K. N., E-mail: kulyanov@vei.ru [Lenin All-Russian Electrotechnical Institute (Russian Federation)

    2013-10-15

    The value of the voltage fall across the anode sheath is found as a function of the current density. Analytic solutions are obtained in a wide range of the ratio of the directed velocity of plasma electrons v{sub 0} to their thermal velocity v{sub T}. It is shown that the voltage fall in a one-dimensional collisionless anode sheath is always negative. At the small values of v{sub 0}/v{sub T}, the obtained expression asymptotically transforms into the Langmuir formula. Generalized Bohm’s criterion for an electric discharge with allowance for the space charge density ρ(0), electric field E(0), ion velocity v{sub i}(0), and ratio v{sub 0}/v{sub T} at the plasma-sheath interface is formulated. It is shown that the minimum value of the ion velocity v{sub i}{sup *}(0) corresponds to the vanishing of the electric field at one point inside the sheath. The dependence of v{sub i}{sup *} (0) on ρ(0), E(0), and v{sub 0}/v{sub T} determines the boundary of the existence domain of stationary solutions in the sheath. Using this criterion, the maximum possible degree of contraction of the electron current at the anode is determined for a short high-current vacuum arc discharge.

  19. Generalized Bohm’s criterion and negative anode voltage fall in electric discharges

    International Nuclear Information System (INIS)

    Londer, Ya. I.; Ul’yanov, K. N.

    2013-01-01

    The value of the voltage fall across the anode sheath is found as a function of the current density. Analytic solutions are obtained in a wide range of the ratio of the directed velocity of plasma electrons v 0 to their thermal velocity v T . It is shown that the voltage fall in a one-dimensional collisionless anode sheath is always negative. At the small values of v 0 /v T , the obtained expression asymptotically transforms into the Langmuir formula. Generalized Bohm’s criterion for an electric discharge with allowance for the space charge density ρ(0), electric field E(0), ion velocity v i (0), and ratio v 0 /v T at the plasma-sheath interface is formulated. It is shown that the minimum value of the ion velocity v i * (0) corresponds to the vanishing of the electric field at one point inside the sheath. The dependence of v i * (0) on ρ(0), E(0), and v 0 /v T determines the boundary of the existence domain of stationary solutions in the sheath. Using this criterion, the maximum possible degree of contraction of the electron current at the anode is determined for a short high-current vacuum arc discharge

  20. Design of electronic measurement and quench detection equipment for the Current Lead Test facility Karlsruhe (CuLTKa)

    International Nuclear Information System (INIS)

    Hollik, Markus; Fietz, Walter H.; Fink, Stefan; Gehrlein, Mirko; Heller, Reinhard; Lange, Christian; Möhring, Tobias

    2013-01-01

    The Current Lead Test facility Karlsruhe (CuLTKa) is under construction at the Karlsruhe Institute of Technology (KIT) to perform acceptance tests of high temperature superconductor (HTS) current leads (CL). CuLTKa is in progress and present planning expects the completion in 2013. The data acquisition system is based on a modular design with electronic measurement and monitoring equipment covering a test voltage of 50 kV DC against ground. It provides plug-in units which enable temperature and voltage measurement at high voltage potential and in addition quench detection units which detect a loss of superconductivity reliably and quickly to avoid damage of the superconducting device under test. Prototype units for quench detection, temperature and voltage measurement have been successfully tested. Six temperature measurement units are already in use in the KIT test facility TOSKA and operated reliably during the acceptance tests of the HTS current leads for Wendelstein 7-X (W7-X) in 2011/2012. CuLTKa will be used first for 26 current leads which will be built in KIT for the fusion experiment JT-60SA. The present paper gives an overview of the design of the electronic measurement and quench detection equipment

  1. On-line monitoring of base current and forward emitter current gain of the voltage regulator's serial pnp transistor in a radiation environment

    Directory of Open Access Journals (Sweden)

    Vukić Vladimir Đ.

    2012-01-01

    Full Text Available A method of on-line monitoring of the low-dropout voltage regulator's operation in a radiation environment is developed in this paper. The method had to enable detection of the circuit's degradation during exploitation, without terminating its operation in an ionizing radiation field. Moreover, it had to enable automatic measurement and data collection, as well as the detection of any considerable degradation, well before the monitored voltage regulator's malfunction. The principal parameters of the voltage regulator's operation that were monitored were the serial pnp transistor's base current and the forward emitter current gain. These parameters were procured indirectly, from the data on the voltage regulator's load and quiescent currents. Since the internal consumption current in moderately and heavily loaded devices was used, the quiescent current of a negligibly loaded voltage regulator of the same type served as a reference. Results acquired by on-line monitoring demonstrated marked agreement with the results acquired from examinations of the voltage regulator's maximum output current and minimum dropout voltage in a radiation environment. The results were particularly consistent in tests with heavily loaded devices. Results obtained for moderately loaded voltage regulators and the risks accompanying the application of the presented method, were also analyzed.

  2. Glow-to-arc transition events in H2-Ar direct current pulsed plasma: Automated measurement of current and voltage

    International Nuclear Information System (INIS)

    Mendes, Luciano A.; Rodrigues, Jhonatam C.; Mafra, Marcio

    2012-01-01

    The glow-to-arc transition phenomena (arcing) observed in plasma reactors used in materials processing was studied through the arcs characteristic current and voltage waveforms. In order to capture these arcs signals, a LABVIEW based automated instrumentation system (ARCVIEW) was developed, including the integration of an oscilloscope equipped with proper current and voltage probes. The system also allows capturing the process parameters at the arc occurrence moments, which were used to map the arcs events conditions. Experiments in H 2 -Ar DC pulsed plasma returned signals data from 215 arcs events, which were analyzed through software routines. According to the results, an anti-arcing system should react in the time order of few microseconds to prevent most of the damage caused by the undesired arcing phenomena.

  3. Ultra-low Voltage CMOS Cascode Amplifier

    OpenAIRE

    Lehmann, Torsten; Cassia, Marco

    2000-01-01

    In this paper, we design a folded cascode operational transconductance amplifier in a standard CMOS process, which has a measured 69 dB DC gain, a 2 MHz bandwidth and compatible input- and output voltage levels at a 1 V power supply. This is done by a novel Current Driven Bulk (CDB) technique, which reduces the MOST threshold voltage by forcing a constant current though the transistor bulk terminal. We also look at limitations and improvements of this CDB technique.

  4. Ultra-low Voltage CMOS Cascode Amplifier

    DEFF Research Database (Denmark)

    Lehmann, Torsten; Cassia, Marco

    2000-01-01

    In this paper, we design a folded cascode operational transconductance amplifier in a standard CMOS process, which has a measured 69 dB DC gain, a 2 MHz bandwidth and compatible input- and output voltage levels at a 1 V power supply. This is done by a novel Current Driven Bulk (CDB) technique......, which reduces the MOST threshold voltage by forcing a constant current though the transistor bulk terminal. We also look at limitations and improvements of this CDB technique....

  5. Manifestation of vortex depinning transition in nonlinear current-voltage characteristics of polycrystalline superconductor Y1-xPrxBa2Cu3O7-δ

    International Nuclear Information System (INIS)

    Rivera, V.A.G.; Stari, C.; Sergeenkov, S.; Marega, E.; Araujo-Moreira, F.M.

    2008-01-01

    We present our recent results on the temperature dependence of current-voltage characteristics for polycrystalline Y 1-x Pr x Ba 2 Cu 3 O 7-δ superconductors with x=0.0, 0.1 and 0.3. The experimental results are found to be reasonably well fitted for all samples by a power like law of the form V=R(I-I c ) a(T) . Here, we assume that a(T)=1+Φ 0 I C (T)/2πk B T and I C (T)=I C (0)(1-T/T C ) 3/2 for the temperature dependences of the power exponent and critical current, respectively. According to the theoretical interpretation of the obtained results, nonlinear deviation of our current-voltage characteristics curves from Ohmic behavior (with a(T C )=1) below T C is attributed to the manifestation of dissipation processes. They have a characteristic temperature T p defined via the power exponent as a(T p )=2 and are related to the current induced depinning of Abrikosov vortices. Both T C (x) and T p (x) are found to decrease with an increase of Pr concentration x reflecting deterioration of the superconducting properties of the doped samples

  6. Recombination in polymer:Fullerene solar cells with open-circuit voltages approaching and exceeding 1.0 V

    KAUST Repository

    Hoke, Eric T.

    2012-09-14

    Polymer:fullerene solar cells are demonstrated with power conversion efficiencies over 7% with blends of PBDTTPD and PC 61 BM. These devices achieve open-circuit voltages ( V oc ) of 0.945 V and internal quantum efficiencies of 88%, making them an ideal candidate for the large bandgap junction in tandem solar cells. V oc \\'s above 1.0 V are obtained when the polymer is blended with multiadduct fullerenes; however, the photocurrent and fill factor are greatly reduced. In PBDTTPD blends with multiadduct fullerene ICBA, fullerene emission is observed in the photoluminescence and electroluminescence spectra, indicating that excitons are recombining on ICBA. Voltage-dependent, steady state and time-resolved photoluminescence measurements indicate that energy transfer occurs from PBDTTPD to ICBA and that back hole transfer from ICBA to PBDTTPD is inefficient. By analyzing the absorption and emission spectra from fullerene and charge transfer excitons, we estimate a driving free energy of -0.14 ± 0.06 eV is required for efficient hole transfer. These results suggest that the driving force for hole transfer may be too small for efficient current generation in polymer:fullerene solar cells with V oc values above 1.0 V and that non-fullerene acceptor materials with large optical gaps ( > 1.7 eV) may be required to achieve both near unity internal quantum efficiencies and values of V oc exceeding 1.0 V. © 2013 WILEY-VCH Verlag GmbH and Co.

  7. Recombination in polymer:Fullerene solar cells with open-circuit voltages approaching and exceeding 1.0 V

    KAUST Repository

    Hoke, Eric T.; Vandewal, Koen; Bartelt, Jonathan A.; Mateker, William R.; Douglas, Jessica D.; Noriega, Rodrigo; Graham, Kenneth; Frechet, Jean; Salleo, Alberto; McGehee, Michael D.

    2012-01-01

    Polymer:fullerene solar cells are demonstrated with power conversion efficiencies over 7% with blends of PBDTTPD and PC 61 BM. These devices achieve open-circuit voltages ( V oc ) of 0.945 V and internal quantum efficiencies of 88%, making them an ideal candidate for the large bandgap junction in tandem solar cells. V oc 's above 1.0 V are obtained when the polymer is blended with multiadduct fullerenes; however, the photocurrent and fill factor are greatly reduced. In PBDTTPD blends with multiadduct fullerene ICBA, fullerene emission is observed in the photoluminescence and electroluminescence spectra, indicating that excitons are recombining on ICBA. Voltage-dependent, steady state and time-resolved photoluminescence measurements indicate that energy transfer occurs from PBDTTPD to ICBA and that back hole transfer from ICBA to PBDTTPD is inefficient. By analyzing the absorption and emission spectra from fullerene and charge transfer excitons, we estimate a driving free energy of -0.14 ± 0.06 eV is required for efficient hole transfer. These results suggest that the driving force for hole transfer may be too small for efficient current generation in polymer:fullerene solar cells with V oc values above 1.0 V and that non-fullerene acceptor materials with large optical gaps ( > 1.7 eV) may be required to achieve both near unity internal quantum efficiencies and values of V oc exceeding 1.0 V. © 2013 WILEY-VCH Verlag GmbH and Co.

  8. A differential low-voltage high gain current-mode integrated RF receiver front-end

    Energy Technology Data Exchange (ETDEWEB)

    Wang Chunhua; Ma Minglin; Sun Jingru; Du Sichun; Guo Xiaorong; He Haizhen, E-mail: wch1227164@sina.com [School of Information Science and Technology, Hunan University, Changsha 410082 (China)

    2011-02-15

    A differential low-voltage high gain current-mode integrated RF front end for an 802.11b WLAN is proposed. It contains a differential transconductance low noise amplifier (G{sub m}-LNA) and a differential current-mode down converted mixer. The single terminal of the G{sub m}-LNA contains just one MOS transistor, two capacitors and two inductors. The gate-source shunt capacitors, C{sub x1} and C{sub x2}, can not only reduce the effects of gate-source C{sub gs} on resonance frequency and input-matching impedance, but they also enable the gate inductance L{sub g1,2} to be selected at a very small value. The current-mode mixer is composed of four switched current mirrors. Adjusting the ratio of the drain channel sizes of the switched current mirrors can increase the gain of the mixer and accordingly increase the gain of RF receiver front-end. The RF front-end operates under 1 V supply voltage. The receiver RFIC was fabricated using a chartered 0.18 {mu}m CMOS process. The integrated RF receiver front-end has a measured power conversion gain of 17.48 dB and an input referred third-order intercept point (IIP3) of -7.02 dBm. The total noise figure is 4.5 dB and the power is only 14 mW by post-simulations. (semiconductor integrated circuits)

  9. In situ scanning tunnelling microscopy of redox molecules. Coherent electron transfer at large bias voltages

    DEFF Research Database (Denmark)

    Zhang, Jingdong; Kuznetsov, A.M.; Ulstrup, Jens

    2003-01-01

    Theories of in situ scanning tunnelling microscopy (STM) of molecules with redox levels near the substrate and tip Fermi levels point to 'spectroscopic' current-overpotential features. Prominent features require a narrow 'probing tip', i.e. a small bias voltage, eV(bias), compared...... a broad tunnelling current-overpotential range at a constant (large) bias voltage of +0.2 V. The current is found to be constant over a 0.25 V overpotential range, which covers roughly the range where the oxidised and reduced redox levels are located within the energy tip. STM contrast and apparent...... of previous theoretical work on in situ STM of redox molecules, to large bias voltages, \\eV(bias)\\ > E-r. Large bias voltages give tunnelling contrasts independent of the overpotential over a broad range, as both the oxidised and reduced redox levels are located within the 'energy tip' between the substrate...

  10. I-V curves of Y-Ba-Cu-O microbridges in the flux flow regime

    International Nuclear Information System (INIS)

    Kalisky, B.; Wolfus, Y.; Yeshurun, Y.; Koren, G.; Huebener, R.P.

    2004-01-01

    We report on measurements of I-V curves in microbridges of thin Y-Ba-Cu-O films of different thickness, in the presence of external magnetic fields up to 6 T. A discontinuity is observed at a critical voltage, V*, in the flux flow regime, reflecting an electronic instability, as predicted by Larkin and Ovchinnikov (LO), and in agreement with results reported by Doettinger et al. [Phys. Rev. Let. 73 (1994) 1691]. The critical voltage, V*, and the flux flow resistance, R 0 , in the limit V→0, are calculated by fitting the data to the LO model. We find that the vortex critical velocity, v*, at the instability, derived from V*, decreases with magnetic field and film thickness. These results, not predicted by the LO theory, reflect the dependence of the (spatially averaged) quasiparticle energy relaxation rate on magnetic field and film thickness

  11. Development of a Compensation Scheme for a Measurement Voltage Transformer Using the Hysteresis Characteristics of a Core

    Directory of Open Access Journals (Sweden)

    Hyewon Lee

    2015-04-01

    Full Text Available This paper describes the design, evaluation, and implementation of a compensation scheme for a measurement voltage transformer (VT using the hysteresis characteristics of the core. The error of a VT is caused by the primary winding voltage and secondary winding voltage. The latter depends on the secondary current, whereas the former depends on the primary current, which is an aggregate of the exciting and secondary currents. The secondary current is obtained directly from the secondary voltage and is used to obtain the voltage across the secondary winding. For the primary current, the exciting current is decomposed into two components: core-loss and magnetizing currents. The magnetizing current is obtained by the flux-magnetizing current curve instead of the hysteresis loop to minimize the required loops for compensation. The core-loss current is obtained by dividing the primary induced voltage by the core-loss resistance. Finally, the estimated voltages across the primary and secondary windings are added to the measured secondary voltage for compensation. The scheme can significantly improve the accuracy of a VT. The results of the performance of compensator are shown in the experimental test. The accuracy of the measurement VT improves from 1.0C class to 0.1C class. The scheme can help to significantly reduce the required core cross section of a measurement VT in an electrical energy system.

  12. Universal Voltage Conveyor and Current Conveyor in Fast Full-Wave Rectifier

    Directory of Open Access Journals (Sweden)

    Josef Burian

    2012-12-01

    Full Text Available This paper deals about the design of a fast voltage-mode full-wave rectifier, where universal voltage conveyor and second-generation current conveyor are used as active elements. Thanks to the active elements, the input and output impedance of the non-linear circuit is infinitely high respectively zero in theory. For the rectification only two diodes and three resistors are required as passive elements. The performance of the circuit is shown on experimental measurement results showing the dynamic range, time response, frequency dependent DC transient value and RMS error for different values of input voltage amplitudes.

  13. DC-Voltage Fluctuation Elimination Through a DC-Capacitor Current Control for DFIG Converters Under Unbalanced Grid Voltage Conditions

    DEFF Research Database (Denmark)

    Liu, Changjin; Xu, Dehong; Zhu, Nan

    2013-01-01

    Unbalanced grid voltage causes a large second-order harmonic current in the dc-link capacitors as well as dc-voltage fluctuation, which potentially will degrade the lifespan and reliability of the capacitors in voltage source converters. This paper proposes a novel dc-capacitor current control...... method for a grid-side converter (GSC) to eliminate the negative impact of unbalanced grid voltage on the dc-capacitors. In this method, a dc-capacitor current control loop, where a negative-sequence resonant controller is used to increase the loop gain, is added to the conventional GSC current control...... loop. The rejection capability to the unbalanced grid voltage and the stability of the proposed control system are discussed. The second-order harmonic current in the dc capacitor as well as dc-voltage fluctuation is very well eliminated. Hence, the dc capacitors will be more reliable under unbalanced...

  14. A current mode feed-forward gain control system for a 0.8 V CMOS hearing aid

    Energy Technology Data Exchange (ETDEWEB)

    Li Fanyang; Yang Haigang; Liu Fei; Yin Tao, E-mail: yanghg@mail.ie.ac.cn [Institute of Electronics, Chinese Academy of Sciences, Beijing 100080 (China)

    2011-06-15

    A current mode feed-forward gain control (CMFGC) technique is presented, which is applied in the front-end system of a hearing aid chip. Compared with conventional automatic gain control (AGC), CMFGC significantly improves the total harmonic distortion (THD) by digital gain control. To attain the digital gain control codes according to the extremely weak output signal from the microphone, a rectifier and a state controller implemented in current mode are proposed. A prototype chip has been designed based on a 0.13 {mu}m standard CMOS process. The measurement results show that the supply voltage can be as low as 0.6 V. And with the 0.8 V supply voltage, the THD is improved and below 0.06% (-64 dB) at the output level of 500 mV{sub p-p}, yet the power consumption is limited to 40 {mu}W. In addition, the input referred noise is only 4 {mu}V{sub rms} and the maximum gain is maintained at 33 dB. (semiconductor integrated circuits)

  15. A current mode feed-forward gain control system for a 0.8 V CMOS hearing aid

    International Nuclear Information System (INIS)

    Li Fanyang; Yang Haigang; Liu Fei; Yin Tao

    2011-01-01

    A current mode feed-forward gain control (CMFGC) technique is presented, which is applied in the front-end system of a hearing aid chip. Compared with conventional automatic gain control (AGC), CMFGC significantly improves the total harmonic distortion (THD) by digital gain control. To attain the digital gain control codes according to the extremely weak output signal from the microphone, a rectifier and a state controller implemented in current mode are proposed. A prototype chip has been designed based on a 0.13 μm standard CMOS process. The measurement results show that the supply voltage can be as low as 0.6 V. And with the 0.8 V supply voltage, the THD is improved and below 0.06% (-64 dB) at the output level of 500 mV p-p , yet the power consumption is limited to 40 μW. In addition, the input referred noise is only 4 μV rms and the maximum gain is maintained at 33 dB. (semiconductor integrated circuits)

  16. Low voltage RF MEMS variable capacitor with linear C-V response

    KAUST Repository

    Elshurafa, Amro M.

    2012-07-23

    An RF MEMS variable capacitor, fabricated in the PolyMUMPS process and tuned electrostatically, possessing a linear capacitance-voltage response is reported. The measured quality factor of the device was 17 at 1GHz, while the tuning range was 1.2:1 and was achieved at an actuation DC voltage of 8V only. Further, the linear regression coefficient was 0.98. The variable capacitor was created such that it has both vertical and horizontal capacitances present. As the top suspended plate moves towards the bottom fixed plate, the vertical capacitance increases whereas the horizontal capacitance decreases simultaneously such that the sum of the two capacitances yields a linear capacitance-voltage relation. © 2012 The Institution of Engineering and Technology.

  17. Multiple current peaks in room-temperature atmospheric pressure homogenous dielectric barrier discharge plasma excited by high-voltage tunable nanosecond pulse in air

    Energy Technology Data Exchange (ETDEWEB)

    Yang, De-Zheng; Wang, Wen-Chun; Zhang, Shuai; Tang, Kai; Liu, Zhi-jie; Wang, Sen [Key Lab of Materials Modification, Dalian University of Technology, Ministry of Education, Dalian 116024 (China)

    2013-05-13

    Room temperature homogenous dielectric barrier discharge plasma with high instantaneous energy efficiency is acquired by using nanosecond pulse voltage with 20-200 ns tunable pulse width. Increasing the voltage pulse width can lead to the generation of regular and stable multiple current peaks in each discharge sequence. When the voltage pulse width is 200 ns, more than 5 organized current peaks can be observed under 26 kV peak voltage. Investigation also shows that the organized multiple current peaks only appear in homogenous discharge mode. When the discharge is filament mode, organized multiple current peaks are replaced by chaotic filament current peaks.

  18. The Effect of Current-Limiting Reactors on the Tripping of Short Circuits in High-Voltage Electrical Equipment

    International Nuclear Information System (INIS)

    Volkov, M. S.; Gusev, Yu. P.; Monakov, Yu. V.; Cho, Gvan Chun

    2016-01-01

    The insertion of current-limiting reactors into electrical equipment operating at a voltage of 110 and 220 kV produces a change in the parameters of the transient recovery voltages at the contacts of the circuit breakers for disconnecting short circuits, which could be the reason for the increase in the duration of the short circuit, damage to the electrical equipment and losses in the power system. The results of mathematical modeling of the transients, caused by tripping of the short circuit in a reactive electric power transmission line are presented, and data are given on the negative effect of a current-limiting resistor on the rate of increase and peak value of the transient recovery voltages. Methods of ensuring the standard requirements imposed on the parameters of the transient recovery voltages when using current-limiting reactors in the high-voltage electrical equipment of power plants and substations are proposed and analyzed

  19. Critical current changes and fatique damage

    International Nuclear Information System (INIS)

    Fisher, E.S.; Kim, S.H.

    1976-01-01

    A facility for investigating the effects of cyclic strains on the current-voltage relation (I-V plots) in a superconducting composite has been constructed as part of the conductor test program directed by Oak Ridge National Laboratory for the Tokamak Experimental Power Reactor. The initial results for a ribbon composite containing 18 Nb--Ti twisted filaments in copper showed three effects: (1) a 3 percent decrease in I/sub c/ at 40 kOe during the initial 200 cycles at 0.35 percent maximum strain amplitude, (2) current sharing between filaments and copper at I less than I/sub c/ after cycling with maximum strain increased to 0.57 percent and (3) voltage steps at I greater than I/sub c/ after 400 cycles with 0.57 percent strain amplitude. The first effect is consistent with I/sub c/ measurements in unidirectional testing and appears to be associated with elastic strain fields. The third effect, the voltage steps at I greater than I/sub c/ introduced by the higher strain amplitudes, decreased very significantly with increasing magnetic field and disappeared at H greater than 40 kOe. A Nb 3 Sn composite fractured during tension-compression cycling, but no damage occurred in 3800 load-unload cycles at strains up to 0.2 percent

  20. On-site voltage measurement with capacitive sensors on high voltage systems

    NARCIS (Netherlands)

    Wu, L.; Wouters, P.A.A.F.; Heesch, van E.J.M.; Steennis, E.F.

    2011-01-01

    In Extra/High-Voltage (EHV/HV) power systems, over-voltages occur e.g. due to transients or resonances. At places where no conventional voltage measurement devices can be installed, on-site measurement of these occurrences requires preferably non intrusive sensors, which can be installed with little

  1. Growth and decay of surface voltage on silver diffused polyimide exposed to 3-15 keV electrons

    Energy Technology Data Exchange (ETDEWEB)

    Mahapatra, S K; Dhole, S D; Bhoraskar, V N [Department of Physics, University of Pune, Pune-411007 (India)

    2007-02-21

    During electron irradiation, the growth in the surface voltage on virgin and silver diffused polyimide sample was studied by varying electron energy from 3 to 15 keV and beam diameter from 3 to 15 mm. At a constant beam current, the surface voltage increased nonlinearly with electron energy but decreased slowly with beam diameter at fixed electron energy. At a surface voltage around saturation or beyond 3 kV, the electron beam was switched off and the decay in the surface voltage was studied for a period of 9 x 10{sup 4} s. The surface analysis revealed that the relative concentrations of carbon increased and that of the oxygen and the nitrogen decreased in the electron irradiated virgin and silver diffused polyimide sample, however in different proportions. Under the identical conditions of electron irradiation, the growth rate of the surface voltage, the post irradiated surface resistivity and the voltage decay constant of the silver diffused polyimide were lower than that of the virgin polyimide. The results of the present study reveal that the resistance of the silver diffused polyimide to keV electrons is higher than that of the virgin polyimide.

  2. A Low Input Current and Wide Conversion Ratio Buck Regulator with 75% Efficiency for High-Voltage Triboelectric Nanogenerators

    Science.gov (United States)

    Luo, Li-Chuan; Bao, De-Chun; Yu, Wu-Qi; Zhang, Zhao-Hua; Ren, Tian-Ling

    2016-01-01

    It is meaningful to research the Triboelectric Nanogenerators (TENG), which can create electricity anywhere and anytime. There are many researches on the structures and materials of TENG to explain the phenomenon that the maximum voltage is stable and the current is increasing. The output voltage of the TENG is high about 180-400 V, and the output current is small about 39 μA, which the electronic devices directly integration of TENG with Li-ion batteries will result in huge energy loss due to the ultrahigh TENG impedance. A novel interface circuit with the high-voltage buck regulator for TENG is introduced firstly in this paper. The interface circuit can transfer the output signal of the TENG into the signal fit to a lithium ion battery. Through the circuit of the buck regulator, the average output voltage is about 4.0 V and the average output current is about 1.12 mA. Further, the reliability and availability for the lithium ion battery and the circuit are discussed. The interface circuit is simulated using the Cadence software and verified through PCB experiment. The buck regulator can achieve 75% efficiency for the High-Voltage TENG. This will lead to a research hot and industrialization applications.

  3. Harmonic current interaction at a low voltage customer's installations

    NARCIS (Netherlands)

    Bhattacharyya, S.; Myrzik, J.M.A.; Kling, W.L.; Cobben, J.F.G.; Casteren, van J.

    2009-01-01

    The increased uses of power electronics and switching devices in the electricity network have changed the operational environment of the power system. These devices have nonlinear voltage-current characteristics and produce harmonic currents, and consequently distort the voltage waveform. A low

  4. Analysis of Schottky Barrier Parameters and Current Transport Properties of V/p-Type GaN Schottky Junction at Low Temperatures

    Science.gov (United States)

    Asha, B.; Harsha, Cirandur Sri; Padma, R.; Rajagopal Reddy, V.

    2018-05-01

    The electrical characteristics of a V/p-GaN Schottky junction have been investigated by current-voltage (I-V) and capacitance-voltage (C-V) characteristics under the assumption of the thermionic emission (TE) theory in the temperature range of 120-280 K with steps of 40 K. The zero-bias barrier height (ΦB0), ideality factor (n), flat-band barrier height (ΦBF) and series resistance (R S) values were evaluated and were found to be strongly temperature dependent. The results revealed that the ΦB0 values increase, whereas n, ΦFB and R S values decrease, with increasing temperature. Using the conventional Richardson plot, the mean barrier height (0.39 eV) and Richardson constant (8.10 × 10-10 Acm-2 K-2) were attained. The barrier height inhomogeneities were demonstrated by assuming a Gaussian distribution function. The interface state density (N SS) values were found to decrease with increasing temperature. The reverse leakage current mechanism of the V/p-GaN Schottky junction was found to be governed by Poole-Frenkel emission at all temperatures.

  5. Optimization of recommendations for abdomen computerized tomography based on reconstruction filters, voltage and tube current

    International Nuclear Information System (INIS)

    Silveira, Vinicius da Costa

    2015-01-01

    The use of computed tomography has increased significantly over the past decades. In Brazil the use increased more than twofold from 2008 to 2014, in the meantime the abdomen procedures have tripled. The high frequency of this procedure combined by the increasing collective radiation dose in medical exposures, has resulted development tools to maximize the benefit in CT images. This work aimed to establish protocols optimized in abdominal CT through acquisitions parameters and reconstructions techniques based on filters kernels. A sample of patients undergoing abdominal CT in a diagnostic center of Rio de Janeiro was assessed. Had been collected patients information and acquisitions parameters. The phantoms CT image acquisitions were performed by using different voltage values by adjusting the tube current (mAs) to obtain the same value from CTDI vol patients with normal BMI. Afterwards, the CTDIvol values were reduced by 30%, 50% and 60%. All images were reconstructed with low-contrast filters (A) and standard filters (B). The CTDIvol values for patients with normal BMI were 7% higher than in patients with underweight BMI and 30%, 50% and 60% lower than the overweight, obese I and III patients, respectively. The evaluations of image quality showed that variation of the current (mA) and the reconstruction filters did not affect the Hounsfield values. When the contrast-to-noise ratio (CNR) was normalized to CTDIvol, the protocols acquired with 60% reduction of CTDIvol with 140 kV and 80 kV showed CNR 6% lower than the routine. Modifications of the acquisition parameters did not affect spatial resolution, but the post-processing with B filters reduced the spatial frequency by 16%. With reduced the dose of 30%, lesions in the spleen had the CNR higher than 10% routine protocols with 140 kV acquired and post-processed to filter A. The image post-processing with a filter A with a 80kV voltage provided CNR values equal to the routine for the liver lesions with a 30

  6. Evaluation of variation of voltage (kV) absorbed dose in chest CT scans

    International Nuclear Information System (INIS)

    Mendonca, Bruna G.A.; Mourao, Arnaldo P.

    2013-01-01

    Computed tomography (CT) is one of the most important diagnostic techniques images today. The increasing utilization of CT implies a significant increase of population exposure to ionizing radiation. Optimization of practice aims to reduce doses to patients because the image quality is directly related to the diagnosis. You can decrease the amount of dose to the patient, and maintain the quality of the image. There are several parameters that can be manipulated in a CT scan and these parameters can be used to reduce the energy deposited in the patient. Based on this, we analyzed the variation of dose deposited in the lungs, breasts and thyroid, by varying the supply voltage of the tube. Scans of the thorax were performed following the protocol of routine chest with constant and variable current for the same applied voltage. Moreover, a female phantom was used and thermoluminescent dosimeters (TLD-100), model bat, were used to record the specific organ doses. Scans were performed on a GE CT scanner, model 64 Discovery channels. Higher doses were recorded for the voltage of 120 kV with 200 mAs in the lungs (22.46 mGy) and thyroid (32.22 mGy). For scans with automatic mAs, variable between 100 and 440, this same tension contributed to the higher doses. The best examination in terms of the dose that was used with automatic 80 kV mAs, whose lungs and thyroid received lower dose. For the best breast exam was 100 kV. Since the increase in the 80 kV to 100 kV no impact so much the dose deposited in the lungs, it can be concluded that lowering the applied voltage to 100 kV resulted in a reduction in the dose absorbed by the patient. These results can contribute to optimizing scans of the chest computed tomography

  7. On the profile of frequency and voltage dependent interface states and series resistance in MIS structures

    Energy Technology Data Exchange (ETDEWEB)

    Doekme, Ilbilge [Science Education Department, Faculty of Kirsehir Education, Gazi University, Kirsehir (Turkey)]. E-mail: ilbilgedokme@gazi.edu.tr; Altindal, Semsettin [Physics Department, Faculty of Arts and Sciences, Gazi University, 06500, Teknikokullar, Ankara (Turkey)

    2007-04-30

    The variation in the capacitance-voltage (C-V) and conductance-voltage (G/{omega}-V) characteristics of Au/SiO{sub 2}/n-Si metal-insulator-semiconductor (MIS) structure have been systematically investigated as a function of frequencies in the frequency range 0.5 kHz-10 MHz at room temperature. In addition, the forward and reverse bias current-voltage (I-V) characteristics of this structure were measured at room temperature. The high value of ideality factor was attributed to the high density of interface states localized at Si/SiO{sub 2} interface and interfacial oxide layer. The density of interface states (N{sub ss}) and the series resistance (R{sub ss}) were calculated from I-V and C-V measurements using different methods and the effect of them on C-V and G/{omega}-V characteristics were deeply researched. At the same energy position near the top of valance band, the calculated N{sub ss} values, obtained without taking into account the series resistance of the devices almost one order of magnitude larger than N{sub ss} values obtained by taking into account R{sub ss} values. It is found that the C-V and G/{omega}-V curves exhibit a peak at low frequencies and the peak values of C and G/{omega} decrease with increasing frequency. Also, the plots of R {sub s} as a function of bias give two peaks in the certain voltage range at low frequencies. These observations indicate that at low frequencies, the charges at interface states can easily follow an AC signal and the number of them increases with decreasing frequency. The I-V, C-V and G/{omega}-V characteristics of the MIS structure are affected not only with R {sub s} but also N {sub ss}. Experimental results show that both the R{sub s} and C{sub o} values should be taken into account in determining frequency-dependent electrical characteristics.

  8. Development and fabrication process for ZnO based varistors for medium voltage arresters 13000 V to 34000 V; Desarrollo y produccion de varistores de ZnO dopados para media tension 13000 V a 34000 V

    Energy Technology Data Exchange (ETDEWEB)

    Gonzalez Rolon, B.; Ireta Moreno, F. [Facultad de Ingenieria Mecanica, Electrica y Electronica, Universidad de Guanajuato, Salamanca, Guanajuato (Mexico)]. E-mail: barbara@salamanca.ugto.mx; fireta@salamanca.ugto.mx

    2011-04-15

    The fabrication process for ZnO doped varistor blocks with Sb2O3/ Bi2O3 to medium tension of 13000 V to 34000 V, and was optimised in terms of a starting composition and firing temperatures with amounts for Sb2O3/ Bi2O3 ratios of 1.7 by dry pressing, and fired in the temperature 1150 degrees Celsius {+-}2 degrees Celsius. The microstructure characteristics were analysed across the surface of the varistor blocks in order to evaluate their microstructure homogeneity. Their current-voltage I-V and energy handling capabilities were also determined. Characteristics and electrical properties of the varistor blocks are discussed. [Spanish] El proceso de fabricacion para varistores de media tension de 13000 V a 34000 V de ZnO consistio en dopar con Sb2O3, Bi2O3 y optimizarlos en terminos de la composicion de inicio, con una relacion de Sb2O3/Bi2O3 de 1.7, y el uso de aditivos para ceramicas, la temperatura de sinterizado fue de 1150 grados centigrados {+-}2 grados centigrados. Se investigo la homogeneidad de la microestructura. Se determinaron las propiedades electricas mediante la determinacion de la grafica I-V. Las caracteristicas electricas son discutidas.

  9. Improved performance of the microbial electrolysis desalination and chemical-production cell with enlarged anode and high applied voltages.

    Science.gov (United States)

    Ye, Bo; Luo, Haiping; Lu, Yaobin; Liu, Guangli; Zhang, Renduo; Li, Xiao

    2017-11-01

    The aim of this study was to improve performance of the microbial electrolysis desalination and chemical-production cell (MEDCC) using enlarged anode and high applied voltages. MEDCCs with anode lengths of 9 and 48cm (i.e., the 9cm-anode MEDCC and 48cm-anode MEDCC, respectively) were tested under different voltages (1.2-3.0V). Our results demonstrated for the first time that the MEDCC could maintain high performance even under the applied voltage higher than that for water dissociation (i.e., 1.8V). Under the applied voltage of 2.5V, the maximum current density in the 48cm-anode MEDCC reached 32.8±2.6A/m 2 , which is one of the highest current densities reported so far in the bioelectrochemical system (BES). The relative abundance of Geobacter was changed along the anode length. Our results show the great potential of the BES with enlarged anode and high applied voltages. Copyright © 2017 Elsevier Ltd. All rights reserved.

  10. AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors with reduced leakage current and enhanced breakdown voltage using aluminum ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Sun, Shichuang [Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074 (China); Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Fu, Kai, E-mail: kfu2009@sinano.ac.cn, E-mail: cqchen@mail.hust.edu.cn; Yu, Guohao; Zhang, Zhili; Song, Liang; Deng, Xuguang; Li, Shuiming; Sun, Qian; Cai, Yong; Zhang, Baoshun [Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Qi, Zhiqiang; Dai, Jiangnan; Chen, Changqing, E-mail: kfu2009@sinano.ac.cn, E-mail: cqchen@mail.hust.edu.cn [Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074 (China)

    2016-01-04

    This letter has studied the performance of AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors on silicon substrate with GaN buffer treated by aluminum ion implantation for insulating followed by a channel regrown by metal–organic chemical vapor deposition. For samples with Al ion implantation of multiple energies of 140 keV (dose: 1.4 × 10{sup 14} cm{sup −2}) and 90 keV (dose: 1 × 10{sup 14} cm{sup −2}), the OFF-state leakage current is decreased by more than 3 orders and the breakdown voltage is enhanced by nearly 6 times compared to the samples without Al ion implantation. Besides, little degradation of electrical properties of the 2D electron gas channel is observed where the maximum drain current I{sub DSmax} at a gate voltage of 3 V was 701 mA/mm and the maximum transconductance g{sub mmax} was 83 mS/mm.

  11. Bias dependent charge trapping in MOSFETs during 1 and 6 MeV electron irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Shinde, N.S. [Department of Chemical Engineering, Mie University, 5148507 (Japan); Kulkarni, V.R.; Mathakari, N.L.; Bhoraskar, V.N. [Department of Physics, Univeristy of Pune, Pune 411007 (India); Dhole, S.D. [Department of Physics, Univeristy of Pune, Pune 411007 (India)], E-mail: sanjay@physics.unipune.ernet.in

    2008-06-15

    To study irradiation-induced charge trapping in SiO{sub 2} and around the SiO{sub 2}-Si interface, depletion n-MOSFETs (metal-oxide-semiconductor field effect transistor) were used. The devices were gate biased during 1 and 6 MeV pulsed electron irradiation. The I{sub D}-V{sub DS} (drain current versus drain voltage) and I{sub D}-V{sub GS} (drain current versus gate voltage) characteristics were measured before and after irradiation. The shift in threshold voltage {delta}V{sub T} (difference in threshold voltage V{sub T} before and after irradiation) exhibited trends depending on the applied gate bias during 1 MeV electron irradiation. This behavior can be associated to the contribution of irradiation-induced negative charge {delta}N{sub IT} buildup around the SiO{sub 2}-Si interface to {delta}V{sub T}, which is sensitive to the electron tunneling from the substrates. However, only weak gate bias dependence was observed in 6 MeV electron irradiated devices. Independent of the energy loss and applied bias, the positive oxide trapped charge {delta}N{sub OT} is marginal and can be associated to thin and good quality of SiO{sub 2}. These results are explained using screening of free and acceptor states by the applied bias during irradiation, thereby reducing the total irradiation-induced charges.

  12. A current-mode voltage regulator with an embedded sub-threshold reference for a passive UHF RFID transponder

    Energy Technology Data Exchange (ETDEWEB)

    Liu Zhongqi [Department of Electronic Engineering, Tsinghua University, Beijing 100084 (China); Zhang Chun; Li Yongming; Wang Zhihua, E-mail: liu-zq04@mails.tsinghua.edu.c [Institute of Microelectronics, Tsinghua University, Beijing 100084 (China)

    2010-06-15

    This paper presents a current-mode voltage regulator for a passive UHF RFID transponder. The passive tag power is extracted from RF energy through the RF-to-DC rectifier. Due to huge variations of the incoming RF power, the rectifier output voltage should be regulated to achieve a stable power supply. By accurately controlling the current flowing into the load with an embedded sub-threshold reference, the regulated voltage varies in a range of 1-1.3 V from -20 to 80 {sup 0}C, and a bandwidth of about 100 kHz is achieved for a fast power recovery. The circuit is fabricated in UMC 0.18 {mu}m mixed-mode CMOS technology, and the current consumption is only 1 {mu}A. (semiconductor integrated circuits)

  13. A current-mode voltage regulator with an embedded sub-threshold reference for a passive UHF RFID transponder

    International Nuclear Information System (INIS)

    Liu Zhongqi; Zhang Chun; Li Yongming; Wang Zhihua

    2010-01-01

    This paper presents a current-mode voltage regulator for a passive UHF RFID transponder. The passive tag power is extracted from RF energy through the RF-to-DC rectifier. Due to huge variations of the incoming RF power, the rectifier output voltage should be regulated to achieve a stable power supply. By accurately controlling the current flowing into the load with an embedded sub-threshold reference, the regulated voltage varies in a range of 1-1.3 V from -20 to 80 0 C, and a bandwidth of about 100 kHz is achieved for a fast power recovery. The circuit is fabricated in UMC 0.18 μm mixed-mode CMOS technology, and the current consumption is only 1 μA. (semiconductor integrated circuits)

  14. Bidirectional current-voltage converters based on magnetostrictive/piezoelectric composites

    NARCIS (Netherlands)

    Jia, Y.; Or, S.W.; Chan, H.L.W.; Jiao, J.; Luo, H.; Van der Zwaag, S.

    2009-01-01

    We report a power supply-free, bidirectional electric current-voltage converter based on a coil-wound laminated composite of magnetostrictive alloy and piezoelectric crystal. An electric current applied to the coil induces a magnetic field, resulting in an electric voltage from the composite due to

  15. Optical triggering of 4H-SiC thyristors (18 kV class) to high currents in purely inductive load circuit

    International Nuclear Information System (INIS)

    Rumyantsev, S L; Levinshtein, M E; Saxena, T; Shur, M S; Cheng, L; Palmour, J W; Agarwal, A

    2014-01-01

    Optical switch-on of a very high voltage (18 kV class) 4H-SiC thyristor with an amplification step (pilot thyristor) to the current I max  = 1225 A is demonstrated using a purely inductive load and a calibrated air transformer. Increasing the inductance of the transformer primary winding slows down the turn on process. However, the inductance has little effect during the initial stage of the switch-on process when the voltage drop on the thyristor and its internal resistance is high. The results show that a further switch-on current increase can be only achieved by introducing additional amplification steps in the pilot thyristor. (paper)

  16. Current-voltage model of LED light sources

    DEFF Research Database (Denmark)

    Beczkowski, Szymon; Munk-Nielsen, Stig

    2012-01-01

    Amplitude modulation is rarely used for dimming light-emitting diodes in polychromatic luminaires due to big color shifts caused by varying magnitude of LED driving current and nonlinear relationship between intensity of a diode and driving current. Current-voltage empirical model of light...

  17. A dynamic Monte Carlo study of anomalous current voltage behaviour in organic solar cells

    International Nuclear Information System (INIS)

    Feron, K.; Fell, C. J.; Zhou, X.; Belcher, W. J.; Dastoor, P. C.

    2014-01-01

    We present a dynamic Monte Carlo (DMC) study of s-shaped current-voltage (I-V) behaviour in organic solar cells. This anomalous behaviour causes a substantial decrease in fill factor and thus power conversion efficiency. We show that this s-shaped behaviour is induced by charge traps that are located at the electrode interface rather than in the bulk of the active layer, and that the anomaly becomes more pronounced with increasing trap depth or density. Furthermore, the s-shape anomaly is correlated with interface recombination, but not bulk recombination, thus highlighting the importance of controlling the electrode interface. While thermal annealing is known to remove the s-shape anomaly, the reason has been not clear, since these treatments induce multiple simultaneous changes to the organic solar cell structure. The DMC modelling indicates that it is the removal of aluminium clusters at the electrode, which act as charge traps, that removes the anomalous I-V behaviour. Finally, this work shows that the s-shape becomes less pronounced with increasing electron-hole recombination rate; suggesting that efficient organic photovoltaic material systems are more susceptible to these electrode interface effects

  18. Noise measurements of YBa2Cu3O7 thin film high-temperature superconductors

    International Nuclear Information System (INIS)

    Hall, J.J.

    1992-01-01

    The characteristics of thin-film YBa2Cu3O7 superconductors were studied from the superconducting region through the transition region and into the normal region. The properties studied included the resistance-temperature, current-voltage, and electrical noise with concentration of measurements in the transition region. The resistance vs. temperature measurements show a zero resistance followed by a small rise in magnitude at the onset of resistance followed by a sharp increase until the resistance tapers off in the fully normal region. The a-axis films had a larger normal resistivity, a lower critical temperature, and a broader transition than the similar c-axis films. The current(I) - voltage(V) measurements were concentrated in the transition region. A power relation between I and V was found to be V varies as I a(T) where a(T) is temperature dependent starting high the onset of vortex formation, approaches 3 at the vortex unbinding temperature, and goes to 1 when fully normal. This behavior was predicted by the Kosterlitz-Thouless theory and was found experimentally in all four films measured. The current-induced electrical noise characteristics were measured for four samples varying in thickness and axis orientation. Each film exhibited a widely varying magnitude of the noise voltage spectral density (S V ) in the transition region with a leveling off when fully normal. The normalized noise (S V /V squared) showed a sharp decrease in magnitude from the onset of measurable noise continually decreasing until flattening out when fully normal. The a-axis films exhibited S V /V squared over 3 order of magnitude larger than the c-axis films in the transition and normal regions. The normalized temperature coefficient of resistance (beta) was plotted against S V /V squared on a log-log scale to see if the noise generated was due to temperature fluctuations (slope = 2)

  19. The Investigation of Field Plate Design in 500 V High Voltage NLDMOS

    Directory of Open Access Journals (Sweden)

    Donghua Liu

    2015-01-01

    Full Text Available This paper presents a 500 V high voltage NLDMOS with breakdown voltage (VBD improved by field plate technology. Effect of metal field plate (MFP and polysilicon field plate (PFP on breakdown voltage improvement of high voltage NLDMOS is studied. The coeffect of MFP and PFP on drain side has also been investigated. A 500 V NLDMOS is demonstrated with a 37 μm drift length and optimized MFP and PFP design. Finally the breakdown voltage 590 V and excellent on-resistance performance (Rsp = 7.88 ohm * mm2 are achieved.

  20. Model Development for Current–Voltage and Transconductance Characteristics of Normally-off AlN/GaN MOSHEMT

    International Nuclear Information System (INIS)

    Swain, R.; Jena, K.; Lenka, T. R.

    2016-01-01

    In this paper, an AlN/GaN-based MOSHEMT is proposed, in accordance to this, a charge control model has been developed analytically and simulated with MATLAB to predict the characteristics of threshold voltage, drain currents and transconductance. The physics based models for 2DEG density, threshold voltage and quantum capacitance in the channel has been put forward. By using these developed models, the drain current for both linear and saturation models is derived. The predicted threshold voltage with the variation of barrier thickness has been plotted. A positive threshold voltage can be obtained by decreasing the barrier thickness which builds up the foundation for enhancement mode MOSHEMT devices. The predicted I_d–V_g_s, I_d–V_d_s and transconductance characteristics show an excellent agreement with the experimental results and hence validate the model.

  1. A novel voltage clamp circuit for the measurement of transistor dynamic on-resistance

    NARCIS (Netherlands)

    Gelagaev, R.; Jacqmaer, P.; Everts, J.; Driesen, Johan

    2012-01-01

    For determining the dynamic on-resistance Rdyn,on of a power transistor, the voltage and current waveforms have to be measured during the switching operation. In measurements of voltage waveforms, using an oscilloscope, the characteristics of an amplifier inside the oscilloscope are distorted when

  2. Demonstration of a High Open-Circuit Voltage GaN Betavoltaic Microbattery

    International Nuclear Information System (INIS)

    Cheng Zai-Jun; San Hai-Sheng; Chen Xu-Yuan; Liu Bo; Feng Zhi-Hong

    2011-01-01

    A high open-circuit voltage betavoltaic microbattery based on a GaN p-i-n diode is demonstrated. Under the irradiation of a 4×4 mm 2 planar solid 63 Ni source with an activity of 2 mCi, the open-circuit voltage V oc of the fabricated single 2×2mm 2 cell reaches as high as 1.62 V, the short-circuit current density J sc is measured to be 16nA/cm 2 . The microbattery has a fill factor of 55%, and the energy conversion efficiency of beta radiation into electricity reaches to 1.13%. The results suggest that GaN is a highly promising potential candidate for long-life betavoltaic microbatteries used as power supplies for microelectromechanical system devices. (cross-disciplinary physics and related areas of science and technology)

  3. Current-zero measurements of vacuum circuit breakers interrupting short-line faults

    NARCIS (Netherlands)

    Smeets, R.P.P.; Linden, van der W.A.

    2003-01-01

    Current zero measurements are performed during short-line fault interruption tests of vacuum circuit breakers. This switching cycle is characterized by a very steep transient recovery voltage. High-resolution measurements of near current-zero arc current and voltage were carried out. Various

  4. A Protection System of High Voltage Generator Electron Acceleration foran Electron Beam Machine 500 kV/10 mA

    International Nuclear Information System (INIS)

    Prajitno; Sudiyanto; Djaziman

    2000-01-01

    Hardwired electronic circuit of protection system to prevent high voltagegenerator EBM have been made. The protection system consists of processparameters such as safety parameter, dynamic logic circuits and interlockrelay drive circuits. Safety parameters using transducer which is factorymade so that the accuracy and reliability could be controlled. A good resultof electronic circuit has been tested which cover: water flow and temperaturemonitoring, grid current, anode current, anode voltage and logic control. Therange of monitoring temperature from 30 o C to 100 o C with output voltagefrom 1.47 V to 5.38 V. The voltage output of water flow monitoring is 0.083 Vto 3.391 V which is equivalent to 1.5 - 30 l/min. Response time of the logiccontrol about 10 ms. By using design and construction of protection system,have been through about the security aspect of high voltage generatoroperation and also system will give early warning if the disturbance andabnormal operation occurred. (author)

  5. Analysis of the current-voltage characteristics lineshapes of resonant tunneling diodes

    International Nuclear Information System (INIS)

    Rivera, P.H.; Schulz, P.A.

    1996-01-01

    It is discussed the influence of a two dimensional electron gas at the emitter-barrier interface on the current-voltage characteristics of a Ga As-Al Ga As double-barrier quantum well resonant tunneling diode. This effect is characterized by the modification of the space charge distribution along the structure. Within the framework of a self-consistent calculation we analyse the current-voltage characteristics of the tunneling diodes. This analysis permits us to infer different tunneling ways, related to the formation of confined states in the emitter region, and their signatures in the current-voltage characteristics. We show that varying the spacer layer, together with barrier heights, changes drastically the current density-voltage characteristics lineshapes. We compare our results with a variety of current-voltage characteristics lineshapes. We compare our results with a variety of current-voltage characteristics reported in the literature. The general trend of experimental lineshapes can be reproduced and interpreted with our model. The possibility of tunneling paths is predicted for a range that has not yet been explored experimentally. (author). 12 refs., 4 figs

  6. Integrated Voltage—Current Monitoring and Control of Gas Metal Arc Weld Magnetic Ball-Jointed Open Source 3-D Printer

    Directory of Open Access Journals (Sweden)

    Yuenyong Nilsiam

    2015-11-01

    Full Text Available To provide process optimization of metal fabricating self-replicating rapid prototyper (RepRap 3-D printers requires a low-cost sensor and data logger system to measure current (I and voltage (V of the gas metal arc welders (GMAW. This paper builds on previous open-source hardware development to provide a real-time measurement of welder I-V where the measuring circuit is connected to two analog inputs of the Arduino that is used to control the 3-D printer itself. Franklin firmware accessed through a web interface that is used to control the printer allows storing the measured values and downloading those stored readings to the user’s computer. To test this custom current and voltage monitoring device this study reports on its use on an upgraded all metal RepRap during the printing of aluminum alloy (ER1100, ER4043, ER4943, ER4047, and ER5356. The voltage and current data were analyzed on a per alloy basis and also layer-by-layer in order to evaluate the device’s efficacy as a monitoring device for 3-D printing and the results of the integrated design are discussed.

  7. Current-voltage characterization of Au contact on sol-gel ZnO films with and without conducting polymer

    International Nuclear Information System (INIS)

    Lin, Yow-Jon; Jheng, Mei-Jyuan; Zeng, Jian-Jhou

    2010-01-01

    This study investigates the current density-voltage (J-V) characteristics of Au/n-type ZnO and Au/polyaniline (PANI)/n-type ZnO devices. ZnO films were prepared by the sol-gel method. For Au/n-type ZnO devices, native defects and impurities resident within the ZnO depletion region contribute to barrier thinning of, carrier hopping across, and tunneling through the Schottky barrier. This leads to the formation of nonalloyed ohmic contacts. However, rectifying junctions were formed on n-type ZnO by employing the simple technique of spin-coating PANI to act as the electron-blocking layer. Our present results suggest that the ZnO depletion region at the PANI/n-type ZnO interface is not the origin of the rectifying behavior of Au/PANI/n-type ZnO contact. In addition, the presence of the built-in potential of Au/PANI/n-type ZnO devices could result in the shift of the J-V curve toward negative voltage. Excellent agreement between simulated and measured data was obtained when the built-in potential was taken into account in the J-V relationship.

  8. Accuracy of Voltage Signal Measurement During Radiofrequency Delivery Through the SMARTTOUCH Catheter.

    Science.gov (United States)

    Safavi-Naeini, Payam; Zafar-Awan, Dreema; Zhu, Hongjian; Zablah, Gerardo; Ganapathy, Anand V; Rasekh, Abdi; Saeed, Mohammad; Razavi, Joanna Esther Molina; Razavi, Mehdi

    2017-01-01

    Current methods for measuring voltage during radiofrequency (RF) ablation (RFA) necessitate turning off the ablation catheter. If voltage could be accurately read without signal attenuation during RFA, turning off the catheter would be unnecessary, allowing continuous ablation. We evaluated the accuracy of the Thermocool SMARTTOUCH catheter for measuring voltage while RF traverses the catheter. We studied 26 patients undergoing RFA for arrhythmias. A 7.5F SMARTTOUCH catheter was used for sensing voltage and performing RFA. Data were collected from the Carto-3 3-dimensional mapping system. Voltages were measured during ablation (RF-ON) and immediately before or after ablation (RF-OFF). In evaluating the accuracy of RF-ON measurements, we utilized the RF-OFF measure as the gold standard. We measured 465 voltage signals. The median values were 0.2900 and 0.3100 for RF-ON and RF-OFF, respectively. Wilcoxon signed rank testing showed no significant difference in these values (P = 0.608). The intraclass correlation coefficient (ICC) was 0.96, indicating that voltage measurements were similarly accurate during RF-OFF versus RF-ON. Five patients had baseline atrial fibrillation (AF), for whom 82 ablation points were measured; 383 additional ablation points were measured for the remaining patients. The voltages measured during RF-ON versus RF-OFF were similar in the presence of AF (P = 0.800) versus non-AF rhythm (P = 0.456) (ICC, 0.96 for both). Voltage signal measurement was similarly accurate during RF-ON versus RF-OFF independent of baseline rhythm. Physicians should consider not turning off the SMARTTOUCH ablation catheter when measuring voltage during RFA. © 2016 Wiley Periodicals, Inc.

  9. Reversible voltage dependent transition of abnormal and normal bipolar resistive switching.

    Science.gov (United States)

    Wang, Guangyu; Li, Chen; Chen, Yan; Xia, Yidong; Wu, Di; Xu, Qingyu

    2016-11-14

    Clear understanding the mechanism of resistive switching is the important prerequisite for the realization of high performance nonvolatile resistive random access memory. In this paper, binary metal oxide MoO x layer sandwiched by ITO and Pt electrodes was taken as a model system, reversible transition of abnormal and normal bipolar resistive switching (BRS) in dependence on the maximum voltage was observed. At room temperature, below a critical maximum voltage of 2.6 V, butterfly shaped I-V curves of abnormal BRS has been observed with low resistance state (LRS) to high resistance state (HRS) transition in both polarities and always LRS at zero field. Above 2.6 V, normal BRS was observed, and HRS to LRS transition happened with increasing negative voltage applied. Temperature dependent I-V measurements showed that the critical maximum voltage increased with decreasing temperature, suggesting the thermal activated motion of oxygen vacancies. Abnormal BRS has been explained by the partial compensation of electric field from the induced dipoles opposite to the applied voltage, which has been demonstrated by the clear amplitude-voltage and phase-voltage hysteresis loops observed by piezoelectric force microscopy. The normal BRS was due to the barrier modification at Pt/MoO x interface by the accumulation and depletion of oxygen vacancies.

  10. Source-Drain Punch-Through Analysis of High Voltage Off-State AlGaN/GaN HEMT Breakdown

    Science.gov (United States)

    Jiang, H.; Li, X.; Wang, J.; Zhu, L.; Wang, H.; Liu, J.; Wang, M.; Yu, M.; Wu, W.; Zhou, Y.; Dai, G.

    2017-06-01

    AlGaN/GaN high-electron mobility transistor’s (HEMT’s) off-state breakdown is investigated using conventional three-terminal off-state breakdown I-V measurement. Competition between gate leakage and source-injection buffer leakage (SIBL) is discussed in detail. It is found that the breakdown is dominated by source-injection which is sensitive to gate voltage and gate length at large gate-to-drain spacing (Lgd > 7μm), where a threshold drain voltage of the occurrence of the SIBL current in GaN buffer exists, and after this threshold voltage the SIBL current continually increased till the buffer breakdown. Our analysis showed that due to the punch-through effect in the buffer, a potential barrier between 2DEG and GaN buffer at the source side mainly controlled by the drain voltage determines the buffer leakage current and the occurrence of the following buffer breakdown, which could explain the experimentally observed breakdown phenomenon.

  11. Research on uncertainty evaluation measure and method of voltage sag severity

    Science.gov (United States)

    Liu, X. N.; Wei, J.; Ye, S. Y.; Chen, B.; Long, C.

    2018-01-01

    Voltage sag is an inevitable serious problem of power quality in power system. This paper focuses on a general summarization and reviews on the concepts, indices and evaluation methods about voltage sag severity. Considering the complexity and uncertainty of influencing factors, damage degree, the characteristics and requirements of voltage sag severity in the power source-network-load sides, the measure concepts and their existing conditions, evaluation indices and methods of voltage sag severity have been analyzed. Current evaluation techniques, such as stochastic theory, fuzzy logic, as well as their fusion, are reviewed in detail. An index system about voltage sag severity is provided for comprehensive study. The main aim of this paper is to propose thought and method of severity research based on advanced uncertainty theory and uncertainty measure. This study may be considered as a valuable guide for researchers who are interested in the domain of voltage sag severity.

  12. Voltage-current characteristics of multiterminal HVDC-VSC for offshore wind farms

    Energy Technology Data Exchange (ETDEWEB)

    Gomis-Bellmunt, Oriol [Centre d' Innovacio Tecnologica en Convertidors Estatics i Accionaments (CITCEA-UPC), Universitat Politecnica de Catalunya UPC, Av. Diagonal, 647, Pl. 2., 08028 Barcelona (Spain); IREC Catalonia Institute for Energy Research, Barcelona (Spain); Liang, Jun; Ekanayake, Janaka; Jenkins, Nicholas [School of Engineering, Cardiff University, Queen' s Buildings, The Parade, Cardiff CF24 3AA, Wales (United Kingdom)

    2011-02-15

    Voltage-current characteristics and equilibrium points for the DC voltages of multiterminal HVDC systems using voltage source converters are discussed. The wind farm rectifiers and grid connected inverters are analyzed through their operating modes, governing equations and graphical characteristics. Using the converter equations and the HVDC grid conductance matrix the equilibrium voltages and currents are found. Case studies are presented considering wind power generation, loss of a converter and voltage sags in the AC grid. (author)

  13. Flexible Compensation of Voltage and Current Unbalance and Harmonics in Microgrids

    Directory of Open Access Journals (Sweden)

    Seyyed Yousef Mousazadeh Mousavi

    2017-10-01

    Full Text Available In recent years, the harmonics and unbalance problems endanger the voltage and current quality of power systems, due to increasing usage of nonlinear and unbalanced loads. Use of Distributed Generation (DG-interfacing inverters is proposed for voltage or current compensation. In this paper, a flexible control method is proposed to compensate voltage and current unbalance and harmonics using the distributed generation (DG-interfacing inverters. This method is applicable to both grid-connected and islanded Microgrids (MGs. In the proposed method, not only the proper control of active and reactive powers can be achieved, but also there is flexibility in compensating the voltage or current quality problems at DG terminals or Points of Common Coupling (PCCs. This control strategy consists of active and reactive power controllers and a voltage/current quality-improvement block. The controller is designed in a stationary (αβ frame. An extensive simulation study has been performed and the results demonstrate the effectiveness of the proposed control scheme. Depending on the compensation modes, the harmonics and unbalance compensation of DG output current, MG-injected current to the grid, as well as PCC and DG voltages, can be achieved in grid-connected operation of MG while in the islanded operation, and the PCC and DG voltages compensation can be obtained through the proposed control scheme.

  14. Current-voltage characteristic of a resonant tunneling diode under electromagnetic radiation

    Directory of Open Access Journals (Sweden)

    N Hatefi Kargan

    2013-09-01

    Full Text Available  In this paper, current-voltage characteristic of a resonant tunneling diode under electromagnetic radiation has been calculated and compared with the results when there is no electromagnetic radiation. For calculating current -voltage characteristic, it is required to calculate the transmission coefficient of electrons from the well and barrier structures of this device. For calculating the transmission coefficient of electrons at the presence of electromagnetic radiation, Finite Difference Time Domain (FDTD method has been used and when there is no electromagnetic radiation Transfer Matrix Method (TMM and finite diffirence time domain method have been used. The results show that the presence of electromagnetic radiation causes resonant states other than principal resonant state (without presence of electromagnetic radiation to appear on the transmition coefficient curve where they are in distances from the principal peak and from each other. Also, the presence of electromagnetic radiation causes peaks other than principal peak to appear on the current-voltage characteristics of the device. Under electromagnetic radiation, the number of peaks on the current-voltage curve is smaller than the number of peaks on the current-voltage transmission coefficient. This is due to the fact that current-voltage curve is the result of integration on the energy of electrons, Thus, the sharper and low height peaks on the transmission coefficient do not appear on the current-voltage characteristic curve.

  15. Total dose behavior of partially depleted SOI dynamic threshold voltage MOS (DTMOS) for very low supply voltage applications (0.6 - 1 V)

    International Nuclear Information System (INIS)

    Ferlet-Cavrois, V.; Musseau, O.; Leray, J.L.; Faynot, O.; Raynaud, C.; Pelloie, J.L.

    1999-01-01

    In this paper, we presented two DTMOS architectures processed with a partially depleted SOI technology. The first architecture, DTMOS without limiting transistor, is dedicated to ultra-low voltage applications, at 0.6 V. For 1V applications, the second architecture, DTMOS with limiting transistor, needs an additional transistor to limit the body-source diode current. The total dose irradiation of both DTMOS architectures induces no change of the drain current, but an increase of the body-source diode current. Total dose induced trapped charge in the buried oxide increases the body potential of the DTMOS transistor. It induces an increase of the current flow at the back interface of the silicon film. Irradiation of complex circuits using DTMOS transistors would lead to a degradation of the stand-by consumption. (authors)

  16. Online junction temperature measurement using peak gate current

    DEFF Research Database (Denmark)

    Baker, Nick; Munk-Nielsen, Stig; Iannuzzo, Francesco

    2015-01-01

    A new method for junction temperature measurement of MOS-gated power semiconductor switches is presented. The measurement method involves detecting the peak voltage over the external gate resistor of an IGBT or MOSFET during turn-on. This voltage is directly proportional to the peak gate current...

  17. Enhanced current and voltage regulators for stand-alone applications

    DEFF Research Database (Denmark)

    Federico, de Bosio; Pastorelli, Michele; Antonio DeSouza Ribeiro, Luiz

    2016-01-01

    State feedback decoupling permits to achieve a better dynamic response for Voltage Source in stand-alone applications. The design of current and voltage regulators is performed in the discrete-time domain since it provides better accuracy and allows direct pole placement. As the attainable...... bandwidth of the current loop is mainly limited by computational and PWM delays, a lead compensator structure is proposed to overcome this limitation. The design of the voltage regulator is based on the Nyquist criterion, verifying to guarantee a high sensitivity peak. Discrete-time domain implementation...

  18. Image quality at low tube voltage (70 kV) and sinogram-affirmed iterative reconstruction for computed tomography in infants with congenital heart disease

    International Nuclear Information System (INIS)

    Nakagawa, Motoo; Ozawa, Yoshiyuki; Sakurai, Keita; Shimohira, Masashi; Shibamoto, Yuta; Ohashi, Kazuya; Asano, Miki; Yamaguchi, Sachiko

    2015-01-01

    Lower tube voltage has advantages for CT angiography, such as improved contrast To evaluate the image quality of low-voltage (70 kV) CT for congenital heart disease and the ability of sinogram-affirmed iterative reconstruction to improve image quality. Forty-six children with congenital heart disease (median age: 109 days) were examined using dual-source CT. Scans were performed at 80 kV and 70 kV in 21 and 25 children, respectively. A nonionic iodinated contrast medium (300 mg I/ml) was used for the 80-kV protocol. The contrast medium was diluted to 75% (225 mgI/mL) with saline for the 70-kV protocol. Image noise was measured in the two protocols for each group by extracting the standard deviations of a region of interest placed on the descending aorta. We then determined whether sinogram-affirmed iterative reconstruction reduced the image noise at 70 kV. There was more noise at 70 kV than at 80 kV (29 ± 12 vs 20 ± 4.8; P < 0.01). Sinogram-affirmed iterative reconstruction with grade 4 strength settings improved the noise (20 ± 5.9; P < 0.01) for the 70-kV group. Sinogram-affirmed iterative reconstruction improved the image quality of CT in congenital heart disease. (orig.)

  19. Image quality at low tube voltage (70 kV) and sinogram-affirmed iterative reconstruction for computed tomography in infants with congenital heart disease

    Energy Technology Data Exchange (ETDEWEB)

    Nakagawa, Motoo; Ozawa, Yoshiyuki; Sakurai, Keita; Shimohira, Masashi; Shibamoto, Yuta [Nagoya City University Graduate School of Medical Sciences, Department of Radiology, Nagoya (Japan); Ohashi, Kazuya [Nagoya City University Hospital, Division of Central Radiology, Nagoya (Japan); Asano, Miki [Nagoya City University Graduate School of Medical Sciences, Department of Cardiovascular Surgery, Nagoya (Japan); Yamaguchi, Sachiko [Nagoya City University Graduate School of Medical Sciences, Department of Pediatrics and Neonatology, Nagoya (Japan)

    2015-09-15

    Lower tube voltage has advantages for CT angiography, such as improved contrast To evaluate the image quality of low-voltage (70 kV) CT for congenital heart disease and the ability of sinogram-affirmed iterative reconstruction to improve image quality. Forty-six children with congenital heart disease (median age: 109 days) were examined using dual-source CT. Scans were performed at 80 kV and 70 kV in 21 and 25 children, respectively. A nonionic iodinated contrast medium (300 mg I/ml) was used for the 80-kV protocol. The contrast medium was diluted to 75% (225 mgI/mL) with saline for the 70-kV protocol. Image noise was measured in the two protocols for each group by extracting the standard deviations of a region of interest placed on the descending aorta. We then determined whether sinogram-affirmed iterative reconstruction reduced the image noise at 70 kV. There was more noise at 70 kV than at 80 kV (29 ± 12 vs 20 ± 4.8; P < 0.01). Sinogram-affirmed iterative reconstruction with grade 4 strength settings improved the noise (20 ± 5.9; P < 0.01) for the 70-kV group. Sinogram-affirmed iterative reconstruction improved the image quality of CT in congenital heart disease. (orig.)

  20. Low start-up voltage dc–dc converter with negative voltage control for thermoelectric energy harvesting

    Directory of Open Access Journals (Sweden)

    Pui-Sun Lei

    2015-01-01

    Full Text Available This Letter presents a low start-up voltage dc–dc converter for low-power thermoelectric systems which uses a native n-type MOS transistor as the start-up switch. The start-up voltage of the proposed converter is 300 mV and the converter does not need batteries to start up. The negative voltage control is proposed to reduce the leakage current caused by native n-type transistor and increase the efficiency. The proposed converter was designed using standard 0.18 µm CMOS process with chip size of 0.388 mm^2. The peak efficiency is 63% at load current of 1.5 mA. The proposed converter provides output voltage >1 V at maximum load current of 3.2 mA.

  1. NO involvement in the inhibition of ghrelin on voltage-dependent potassium currents in rat hippocampal cells.

    Science.gov (United States)

    Lu, Yong; Dang, Shaokang; Wang, Xu; Zhang, Junli; Zhang, Lin; Su, Qian; Zhang, Huiping; Lin, Tianwei; Zhang, Xiaoxiao; Zhang, Yurong; Sun, Hongli; Zhu, Zhongliang; Li, Hui

    2018-01-01

    Ghrelin is a peptide hormone that plays an important role in promoting appetite, regulating distribution and rate of use of energy, cognition, and mood disorders, but the relevant neural mechanisms of these function are still not clear. In this study, we examined the effect of ghrelin on voltage-dependent potassium (K + ) currents in hippocampal cells of 1-3 days SD rats by whole-cell patch-clamp technique, and discussed whether NO was involved in this process. The results showed that ghrelin significantly inhibited the voltage-dependent K + currents in hippocampal cells, and the inhibitory effect was more significant when l-arginine was co-administered. In contrast, N-nitro- l-arginine methyl ester increased the ghrelin inhibited K + currents and attenuated the inhibitory effect of ghrelin. While d-arginine (D-AA) showed no significant impact on the ghrelin-induced decrease in K + current. These results show that ghrelin may play a physiological role by inhibiting hippocampal voltage dependent K + currents, and the NO pathway may be involved in this process. Copyright © 2017 Elsevier B.V. All rights reserved.

  2. Scanning transient current study of the I-V stabilization phenomena in silicon detectors irradiated by fast neutrons

    International Nuclear Information System (INIS)

    Eremin, V.; Verbitskaya, E.; Sidorov, A.; Fretwurst, E.; Lindstrom, G.

    1996-03-01

    Investigation of the I-V stabilization phenomena in neutron irradiated silicon detectors has been carried out using scanning transient current technique (STCT) on non-irradiated PP + -p-n + detectors. The PP + -p-n + detectors were used to simulate the PP + -n-n + detectors irradiated beyond the space charge sign inversion (SCSI). Two mechanisms partially responsible for the I- V stabilization have been identified

  3. Manifestation of π-contacts in magnetic field dependence of I-V characteristics for proximity-type 2D Josephson junction array

    International Nuclear Information System (INIS)

    Rivera, V.A.G.; Sergeenkov, S.; Marega, E.; Araujo-Moreira, F.M.

    2009-01-01

    Results on the temperature and magnetic field dependence of current-voltage characteristics (CVC) are presented for SNS-type 2D ordered array of Nb-Cu 0.95 Al 0.05 -Nb junctions. The critical current I C (T,H) and the power exponent a(T,H)=1+Φ 0 I C (T,H)/2k B T of the nonlinear CVC law V=R[I-I C (T,H)] a(T,H) are found to have a maximum at non-zero value of applied magnetic field H p =225 Oe, which is attributed to manifestation of π-type Josephson contacts in our sample.

  4. A New Asymmetrical Current-fed Converter with Voltage Lifting

    Directory of Open Access Journals (Sweden)

    DELSHAD, M.

    2011-05-01

    Full Text Available This paper presents a new zero voltage switching current-fed DC-DC converter with high voltage gain. In this converter all switches (main and auxiliary turn on under zero voltage switching and turn off under almost zero voltage switching due to snubber capacitor. Furthermore, the voltage spike across the main switch due to leakage inductance of forward transformer is absorbed. The flyback transformer which is connected to the output in series causes to high voltage gain and less voltage stress on the power devices. Considering high efficiency and voltage gain of this converter, it is suitable for green generated systems such as fuel cells or photovoltaic systems. The presented experimental results verify the integrity of the proposed converter.

  5. Voltage-carrying states in superconducting microstrips

    International Nuclear Information System (INIS)

    Stuivinga, M.E.C.

    1983-01-01

    When the critical current is exceeded in a superconducting microstrip, voltage-carrying states with a resistance significantly below the normal state resistance can occur. Phase-slip centers (PSC) appear at about the critical temperature. These are successive local voltage units which manifest themselves as strip-like increments in voltage in the I-V characteristic. For temperatures off the critical temperature the PSC regime degenerates into a region of normal material, a so-called hot spot. These two phenomena, PSC and hot spots, form the subject of this thesis. To gain a better understanding of the phase-slip center process, an experiment was designed to measure local values of the quasi-particle and pair potential. The results of local potential and gap measurements at a PSC in aluminium are presented and discussed. Special attention is paid to pair-breaking interactions which can shorten the relaxation time. A non-linear differential equation is derived which describes the development of a PSC into a normal hot spot under the influence of Joule heating. It incorporates the temperature rise due to the dissipative processes occurring in the charge imbalance tails. Numerical solutions are presented for a set of parameters, including those for aluminium and tin. Subsequently, they are compared with experiments. (Auth.)

  6. Voltage Dependence of a Neuromodulator-Activated Ionic Current123

    Science.gov (United States)

    2016-01-01

    Abstract The neuromodulatory inward current (IMI) generated by crab Cancer borealis stomatogastric ganglion neurons is an inward current whose voltage dependence has been shown to be crucial in the activation of oscillatory activity of the pyloric network of this system. It has been previously shown that IMI loses its voltage dependence in conditions of low extracellular calcium, but that this effect appears to be regulated by intracellular calmodulin. Voltage dependence is only rarely regulated by intracellular signaling mechanisms. Here we address the hypothesis that the voltage dependence of IMI is mediated by intracellular signaling pathways activated by extracellular calcium. We demonstrate that calmodulin inhibitors and a ryanodine antagonist can reduce IMI voltage dependence in normal Ca2+, but that, in conditions of low Ca2+, calmodulin activators do not restore IMI voltage dependence. Further, we show evidence that CaMKII alters IMI voltage dependence. These results suggest that calmodulin is necessary but not sufficient for IMI voltage dependence. We therefore hypothesize that the Ca2+/calmodulin requirement for IMI voltage dependence is due to an active sensing of extracellular calcium by a GPCR family calcium-sensing receptor (CaSR) and that the reduction in IMI voltage dependence by a calmodulin inhibitor is due to CaSR endocytosis. Supporting this, preincubation with an endocytosis inhibitor prevented W7 (N-(6-aminohexyl)-5-chloro-1-naphthalenesulfonamide hydrochloride)-induced loss of IMI voltage dependence, and a CaSR antagonist reduced IMI voltage dependence. Additionally, myosin light chain kinase, which is known to act downstream of the CaSR, seems to play a role in regulating IMI voltage dependence. Finally, a Gβγ-subunit inhibitor also affects IMI voltage dependence, in support of the hypothesis that this process is regulated by a G-protein-coupled CaSR. PMID:27257619

  7. Capacitance–voltage and current–voltage characteristics for the study of high background doping and conduction mechanisms in GaAsN grown by chemical beam epitaxy

    International Nuclear Information System (INIS)

    Bouzazi, Boussairi; Kojima, Nobuaki; Ohshita, Yoshio; Yamaguchi, Masafumi

    2013-01-01

    Highlights: ► The cause of high background doping was confirmed and characterized. ► The current–voltage characteristics deviate from the thermionic emission. ► The recombination current is attributed to a hole trap (E V + 0.52 eV). ► The hole trap (E V + 0.52 eV) was confirmed by DLTS measurements. -- Abstract: The temperature dependence of capacitance–voltage (C–V) and current voltage (I–V) characteristics were used to study the cause of high background doping and the underlying current transport mechanisms in GaAsN Schottky diode grown by chemical beam epitaxy (CBE). In one hand, a nitrogen-related sigmoid increase of junction capacitance and ionized acceptor concentration was observed in the temperature range 70–100 K and was attributed to the thermal ionization of a nitrogen–hydrogen-related deep acceptor-state, with thermal activation energy of approximately 0.11 eV above the valence band maximum (VBM) of GaAsN. This acceptor state is mainly responsible for the high background doping in unintentionally doped GaAsN grown by CBE. On the other hand, the I–V characteristics at different temperatures were found to deviate from the well known pure thermionic-emission mechanism. Based on their fitting at each temperature, the recombination current in the space charge region of GaAsN Schottky diode was mainly attributed to a hole trap, localized at 0.51 eV above the VBM. Given the accuracy of measurements, this result was confirmed by deep level transient spectroscopy measurements. Nevertheless, considering the Shockley–Read–Hall model of generation-recombination, the recombination activity of this defect was quantified and qualified to be weak compared with the markedly degradation of minority carrier lifetime in GaAsN material

  8. Quantum transport in III-V-semiconductor nanocolumns; Quantentransport in III-V-Halbleiternanosaeulen

    Energy Technology Data Exchange (ETDEWEB)

    Wensorra, Jakob

    2009-03-20

    good control of the device current by the gate voltage, without gate leakage. The peak current swing factor (the ratio between peak currents corresponding to the limits of a certain interval of the gate voltage) is about 3 for 150 nm diameter nano-RTTs but reach 6 for 60 nm diameter nano-RTTs (functionality based on the quantum collimation effect). Apart from GaAs/AlAs nanocolumns, InAs nanocolumns have been investigated as well. Nano-diodes were characterized by DC room temperature measurements and low temperature magneto-transport measurements. At room temperature, a linear behavior is observed in the I-V characteristics. Periodic oscillations of the resistance were measured by varying magnetic field at low temperatures. (orig.)

  9. An Improvement on the Junction Temperature Measurement of Light-Emitting Diodes by using the Peak Shift Method Compared with the Forward Voltage Method

    International Nuclear Information System (INIS)

    He Su-Ming; Wang Jin-Bin; Luo Xiang-Dong; Zhang Bo; Fu Lei; Cheng Li-Wen; Lu Wei

    2012-01-01

    The junction temperature of red, green and blue high power light emitting diodes (LEDs) is measured by using the emission peak shift method and the forward voltage method. Both the emission peak shift and the forward voltage decrease show a linear relationship relative to junction temperature. The linear coefficients of the red, green and blue LEDs for the peak shift method and the forward voltage method range from 0.03 to 0.15 nm/°C and from 1.33 to 3.59 mV/°C, respectively. Compared with the forward voltage method, the peak shift method is almost independent of bias current and sample difference. The variation of the slopes is less than 2% for the peak shift method and larger than 30% for the forward voltage method, when the LEDs are driven by different bias currents. It is indicated that the peak shift method gives better stability than the forward voltage method under different LED working conditions

  10. Capacitor Voltages Measurement and Balancing in Flying Capacitor Multilevel Converters Utilizing a Single Voltage Sensor

    DEFF Research Database (Denmark)

    Farivar, Glen; Ghias, Amer M. Y. M.; Hredzak, Branislav

    2017-01-01

    This paper proposes a new method for measuring capacitor voltages in multilevel flying capacitor (FC) converters that requires only one voltage sensor per phase leg. Multiple dc voltage sensors traditionally used to measure the capacitor voltages are replaced with a single voltage sensor at the ac...... side of the phase leg. The proposed method is subsequently used to balance the capacitor voltages using only the measured ac voltage. The operation of the proposed measurement and balancing method is independent of the number of the converter levels. Experimental results presented for a five-level FC...

  11. Unusual Voltage-Gated Sodium Currents as Targets for Pain.

    Science.gov (United States)

    Barbosa, C; Cummins, T R

    2016-01-01

    Pain is a serious health problem that impacts the lives of many individuals. Hyperexcitability of peripheral sensory neurons contributes to both acute and chronic pain syndromes. Because voltage-gated sodium currents are crucial to the transmission of electrical signals in peripheral sensory neurons, the channels that underlie these currents are attractive targets for pain therapeutics. Sodium currents and channels in peripheral sensory neurons are complex. Multiple-channel isoforms contribute to the macroscopic currents in nociceptive sensory neurons. These different isoforms exhibit substantial variations in their kinetics and pharmacology. Furthermore, sodium current complexity is enhanced by an array of interacting proteins that can substantially modify the properties of voltage-gated sodium channels. Resurgent sodium currents, atypical currents that can enhance recovery from inactivation and neuronal firing, are increasingly being recognized as playing potentially important roles in sensory neuron hyperexcitability and pain sensations. Here we discuss unusual sodium channels and currents that have been identified in nociceptive sensory neurons, describe what is known about the molecular determinants of the complex sodium currents in these neurons. Finally, we provide an overview of therapeutic strategies to target voltage-gated sodium currents in nociceptive neurons. Copyright © 2016 Elsevier Inc. All rights reserved.

  12. A Hybrid, Current-Source/Voltage-Source Power Inverter Circuit

    DEFF Research Database (Denmark)

    Trzynadlowski, Andrzej M.; Patriciu, Niculina; Blaabjerg, Frede

    2001-01-01

    A combination of a large current-source inverter and a small voltage-source inverter circuits is analyzed. The resultant hybrid inverter inherits certain operating advantages from both the constituent converters. In comparison with the popular voltage-source inverter, these advantages include...... reduced switching losses, improved quality of output current waveforms, and faster dynamic response to current control commands. Description of operating principles and characteristics of the hybrid inverter is illustrated with results of experimental investigation of a laboratory model....

  13. Variable speed wind turbine generator system with current controlled voltage source inverter

    International Nuclear Information System (INIS)

    Muyeen, S.M.; Al-Durra, Ahmed; Tamura, J.

    2011-01-01

    highlights: → Current controlled voltage source inverter scheme for wind power application. → Low voltage ride through of wind farm. → Variable speed wind turbine driven permanent magnet synchronous generator-operation and control. -- Abstract: The present popular trend of wind power generation is to use variable speed wind turbine (VSWT) driving a doubly fed induction generator (DFIG), wound field synchronous generator (WFSG) or permanent magnet synchronous generator (PMSG). Among them, stability analyses of DFIG type of VSWT have already been reported in many literatures. However, transient stability and low voltage ride through (LVRT) characteristics analyses for synchronous generator type of VSWT is not sufficient enough. This paper focuses on detailed LVRT characteristic analysis of variable speed wind turbine driving a PMSG (VSWT-PMSG) with current controlled voltage source inverter (CC-VSI). Modeling and suitable control strategies for overall system are developed to augment the low voltage ride through capability of variable speed wind generator, considering recent wind farm grid code. Both symmetrical and unsymmetrical faults are analyzed as network disturbances in this paper. The permanent fault due to unsuccessful reclosing of circuit breakers is taken into consideration, which is a salient feature of this study. Moreover, the dynamic characteristic is analyzed using real wind speed data measured in Hokkaido Island, Japan. The proposed control scheme is simulated by using the standard power system simulation package PSCAD/EMTDC and results are verified by comparing that of voltage controlled voltage source inverter scheme available in power system literature.

  14. Variable speed wind turbine generator system with current controlled voltage source inverter

    Energy Technology Data Exchange (ETDEWEB)

    Muyeen, S.M., E-mail: muyeen0809@yahoo.co [Dept. of Electrical Engineering, Petroleum Institute, P.O. Box 2533, Abu Dhabi (United Arab Emirates); Al-Durra, Ahmed [Dept. of Electrical Engineering, The Petroleum Institute, P.O. Box 2533, Abu Dhabi (United Arab Emirates); Tamura, J. [Dept. of EEE, Kitami Institute of Technology, 165 Koen-cho, Kitami 090-8507 (Japan)

    2011-07-15

    highlights: {yields} Current controlled voltage source inverter scheme for wind power application. {yields} Low voltage ride through of wind farm. {yields} Variable speed wind turbine driven permanent magnet synchronous generator-operation and control. -- Abstract: The present popular trend of wind power generation is to use variable speed wind turbine (VSWT) driving a doubly fed induction generator (DFIG), wound field synchronous generator (WFSG) or permanent magnet synchronous generator (PMSG). Among them, stability analyses of DFIG type of VSWT have already been reported in many literatures. However, transient stability and low voltage ride through (LVRT) characteristics analyses for synchronous generator type of VSWT is not sufficient enough. This paper focuses on detailed LVRT characteristic analysis of variable speed wind turbine driving a PMSG (VSWT-PMSG) with current controlled voltage source inverter (CC-VSI). Modeling and suitable control strategies for overall system are developed to augment the low voltage ride through capability of variable speed wind generator, considering recent wind farm grid code. Both symmetrical and unsymmetrical faults are analyzed as network disturbances in this paper. The permanent fault due to unsuccessful reclosing of circuit breakers is taken into consideration, which is a salient feature of this study. Moreover, the dynamic characteristic is analyzed using real wind speed data measured in Hokkaido Island, Japan. The proposed control scheme is simulated by using the standard power system simulation package PSCAD/EMTDC and results are verified by comparing that of voltage controlled voltage source inverter scheme available in power system literature.

  15. Mitigation of Grid Current Distortion for LCL-Filtered Voltage Source Inverter with Inverter Current Feedback Control

    DEFF Research Database (Denmark)

    Xin, Zhen; Mattavelli, Paolo; Yao, WenLi

    2018-01-01

    LCL filters feature low inductance; thus, the injected grid current from an LCL-filtered Voltage Source Inverter (VSI) can be easily distorted by grid voltage harmonics. This problem is especially tough for the control system with Inverter-side Current Feedback (ICF), since the grid current...... harmonics can freely flow into the filter capacitor. In this case, because of the loss of harmonic information, traditional harmonic controllers fail to mitigate the grid current distortion. Although this problem may be avoided using the grid voltage feedforward scheme, the required differentiators may...

  16. Containment-based Distributed Coordination Control to Achieve Both Bounded Voltage and Precise Current Sharing in Reverse-Droop-based DC Microgrid

    DEFF Research Database (Denmark)

    Han, Renke; Wang, Haojie; Jin, Zheming

    2017-01-01

    A highly flexible and reliable control strategy is proposed to achieve bounded voltage and precise current sharing, which is implemented in a reverse-droop-based dc Micro-Grid. To acquire the fast-dynamic response, the reverse droop control is used to replace the V-I droop control in the primary...... sharing among converters. Combined the proposed controllers with the electrical part of the dc Micro-Grid, a model is fully developed to analyze the sensitivity of different control coefficients. Experimental results are presented to demonstrate the effectiveness of the proposed method....

  17. Analytical drift-current threshold voltage model of long-channel double-gate MOSFETs

    International Nuclear Information System (INIS)

    Shih, Chun-Hsing; Wang, Jhong-Sheng

    2009-01-01

    This paper presents a new, physical threshold voltage model to solve the ambiguity in determining the threshold voltage of double-gate (DG) MOSFETs. To avoid the difficulties of the conventional 2ψ B model in nearly undoped DG MOSFETs, this study proposes to define the on–off switching based on the actual roles of the drift and diffusion components in the total drain current. The drift current strongly enhances beyond the threshold voltage, while the diffusion current plays a major role in the subthreshold. The threshold voltage is defined as the drift component that exceeds the diffusion counterpart. From the solutions of Poisson's equation, the drift and diffusion currents of DG MOSFETs are separately formulated to derive the analytical expressions of the threshold voltage and associated threshold current. This model provides a comprehensive description of the switching behavior of DG MOSFET devices, and offers a physical onset threshold current to determine the threshold voltage in practical extraction

  18. Effects of a highly Si-doped GaN current spreading layer at the n+-GaN/multi-quantum-well interface on InGaN/GaN blue-light-emitting diodes

    International Nuclear Information System (INIS)

    Kim, C. S.; Cho, H. K.; Choi, R. J.; Hahn, Y. B.; Lee, H. J.; Hong, C. H.

    2004-01-01

    Highly Si-doped GaN thin current spreading layer (CSL) with various carrier concentrations were inserted before the n + -GaN/multi-quantum-well (MQW) interface controlled by the growth rate and the modulated Si-doping in InGaN/GaN blue light-emitting diodes (LEDs), and their effects were investigated by using capacitance-voltage (C-V), current-voltage (I-V), and output power measurements. The LEDs with a highly Si-doped CSL show enhanced I-V characteristics and increased output power with increasing carrier concentration up to some critical point in the CSL. This means that proper high Si-doping in some limited area before the interface may enhance the device performance through the current spreading effect.

  19. Energy harvesting in high voltage measuring techniques

    International Nuclear Information System (INIS)

    Żyłka, Pawel; Doliński, Marcin

    2016-01-01

    The paper discusses selected problems related to application of energy harvesting (that is, generating electricity from surplus energy present in the environment) to supply autonomous ultra-low-power measurement systems applicable in high voltage engineering. As a practical example of such implementation a laboratory model of a remote temperature sensor is presented, which is self-powered by heat generated in a current-carrying busbar in HV- switchgear. Presented system exploits a thermoelectric harvester based on a passively cooled Peltier module supplying micro-power low-voltage dc-dc converter driving energy-efficient temperature sensor, microcontroller and a fibre-optic transmitter. Performance of the model in laboratory simulated conditions are presented and discussed. (paper)

  20. Low-Cost Open-Source Voltage and Current Monitor for Gas Metal Arc Weld 3D Printing

    Directory of Open Access Journals (Sweden)

    A. Pinar

    2015-01-01

    Full Text Available Arduino open-source microcontrollers are well known in sensor applications for scientific equipment and for controlling RepRap 3D printers. Recently low-cost open-source gas metal arc weld (GMAW RepRap 3D printers have been developed. The entry-level welders used have minimal controls and therefore lack any real-time measurement of welder voltage or current. The preliminary work on process optimization of GMAW 3D printers requires a low-cost sensor and data logger system to measure welder current and voltage. This paper reports on the development of a low-cost open-source power measurement sensor system based on Arduino architecture. The sensor system was designed, built, and tested with two entry-level MIG welders. The full bill of materials and open source designs are provided. Voltage and current were measured while making stepwise adjustments to the manual voltage setting on the welder. Three conditions were tested while welding with steel and aluminum wire on steel substrates to assess the role of electrode material, shield gas, and welding velocity. The results showed that the open source sensor circuit performed as designed and could be constructed for <$100 in components representing a significant potential value through lateral scaling and replication in the 3D printing community.

  1. Investigation on Single-Molecule Junctions Based on Current–Voltage Characteristics

    Directory of Open Access Journals (Sweden)

    Yuji Isshiki

    2018-02-01

    Full Text Available The relationship between the current through an electronic device and the voltage across its terminals is a current–voltage characteristic (I–V that determine basic device performance. Currently, I–V measurement on a single-molecule scale can be performed using break junction technique, where a single molecule junction can be prepared by trapping a single molecule into a nanogap between metal electrodes. The single-molecule I–Vs provide not only the device performance, but also reflect information on energy dispersion of the electronic state and the electron-molecular vibration coupling in the junction. This mini review focuses on recent representative studies on I–Vs of the single molecule junctions that cover investigation on the single-molecule diode property, the molecular vibration, and the electronic structure as a form of transmission probability, and electronic density of states, including the spin state of the single-molecule junctions. In addition, thermoelectronic measurements based on I–Vs and identification of the charged carriers (i.e., electrons or holes are presented. The analysis in the single-molecule I–Vs provides fundamental and essential information for a better understanding of the single-molecule science, and puts the single molecule junction to more practical use in molecular devices.

  2. Rating PV Power and Energy: Cell, Module, and System Measurements

    Energy Technology Data Exchange (ETDEWEB)

    Emery, Keith

    2016-06-02

    A summary of key points related to research-level measurements of current vs. voltage measurement theory including basic PV operation, equivalent circuit, and concept of spectral error; PV power performance including PV irradiance sensors, simulators and commercial and generic I-V systems; PV measurement artifacts, intercomparisons, and alternative rating methods.

  3. Power-MOSFET Voltage Regulator

    Science.gov (United States)

    Miller, W. N.; Gray, O. E.

    1982-01-01

    Ninety-six parallel MOSFET devices with two-stage feedback circuit form a high-current dc voltage regulator that also acts as fully-on solid-state switch when fuel-cell out-put falls below regulated voltage. Ripple voltage is less than 20 mV, transient recovery time is less than 50 ms. Parallel MOSFET's act as high-current dc regulator and switch. Regulator can be used wherever large direct currents must be controlled. Can be applied to inverters, industrial furnaces photovoltaic solar generators, dc motors, and electric autos.

  4. Fault Ride-through Capability Enhancement of Voltage Source Converter-High Voltage Direct Current Systems with Bridge Type Fault Current Limiters

    Directory of Open Access Journals (Sweden)

    Md Shafiul Alam

    2017-11-01

    Full Text Available This paper proposes the use of bridge type fault current limiters (BFCLs as a potential solution to reduce the impact of fault disturbance on voltage source converter-based high voltage DC (VSC-HVDC systems. Since VSC-HVDC systems are vulnerable to faults, it is essential to enhance the fault ride-through (FRT capability with auxiliary control devices like BFCLs. BFCL controllers have been developed to limit the fault current during the inception of system disturbances. Real and reactive power controllers for the VSC-HVDC have been developed based on current control mode. DC link voltage control has been achieved by a feedback mechanism such that net power exchange with DC link capacitor is zero. A grid-connected VSC-HVDC system and a wind farm integrated VSC-HVDC system along with the proposed BFCL and associated controllers have been implemented in a real time digital simulator (RTDS. Symmetrical three phase as well as different types of unsymmetrical faults have been applied in the systems in order to show the effectiveness of the proposed BFCL solution. DC link voltage fluctuation, machine speed and active power oscillation have been greatly suppressed with the proposed BFCL. Another significant feature of this work is that the performance of the proposed BFCL in VSC-HVDC systems is compared to that of series dynamic braking resistor (SDBR. Comparative results show that the proposed BFCL is superior over SDBR in limiting fault current as well as improving system fault ride through (FRT capability.

  5. Distribution of barrier heights in Au/porous GaAs Schottky diodes from current-voltage-temperature measurements

    International Nuclear Information System (INIS)

    Harrabi, Z.; Jomni, S.; Beji, L.; Bouazizi, A.

    2010-01-01

    In this work, we have studied the electrical characteristics of the Au/porous GaAs/p-GaAs diodes as a function of temperature. The (I-V)-T characteristics are analysed on the basis of thermionic emission (TE). The temperature behaviour of the barrier height potential and the ideality factor demonstrate that the current transport is controlled by the thermionic emission mechanism (TE) with Gaussian distribution of the barrier height potential. The Gaussian distribution of barrier height potential is due to barrier inhomogeneity, which is suggested to be caused by the presence of the porous GaAs interfacial layer. The experimental (I-V)-T characteristics of the Au/porous GaAs/p-GaAs heterostructure demonstrate the presence of a two Gaussian distributions having a mean barrier height potential Φ b0 -bar of about 0.67 and 0.54 V and standard deviations σ s 2 of about 8.4x10 -3 and 4.2x10 -3 V, respectively. Using the obtained standard deviation, the obtained Richardson constant value is in accordance with the well documented value (79.2 A cm -2 K -2 ) of p-type GaAs and the mean barrier height Φ b0 -bar is closed to the band gap of GaAs. The obtained values prove that the I-V-T characteristics of Au/porous GaAs/p-GaAs heterostructure are governed by the TE mechanism theory with two Gaussian distributions of barrier heights.

  6. Influence of the parameters of supplying pulses and polarization voltage on the signal and shape of current characteristics of the electron capture detector

    International Nuclear Information System (INIS)

    Lasa, J.; Sliwka, I.; Drozdowicz, B.

    1989-01-01

    The paper contains results of measurements of current characteristics and of the signal for the constant concentration of freon F-11 of the ECD supplied with pulse voltage of changeable time of pulse duration t p , amplitude U 1 and the time of pulse repetition t r . In the course of measurements the detector worked at temperature 573 K with the additional constant polarization voltage. The polarization voltage has been observed to cause the effect of hypercoulometry. The presented mathematical analysis helps to determine the values of the coefficient of efficiency of electron capture p, the coefficient of electron loss k D , the coefficient of collecting of electric charges by the anode k' 3 and the coefficient of collecting of electric charges by the detector cathode k u . The coefficients are determined on the basis of experimental measurements. An attempt of physical interpretation of calculated values of these coefficients and their dependence on the parameters of the pulses supplying the detector has been presented. This interpretation requires the assumption that in some pulse periods t r the concentration of positive ions in the detector considerably exceeds concentration n 0 + = √a xα e /V, where a is an efficiency of the carrier gas ionization, α e is the coefficient of the electron-ion recombination and V is the detector volume. This statement helping to describe the effects observed in the electron capture polarized by voltage U a contradicts the recognized concept that the concentration of positive ions in the detector does not exceed the concentration n 0 + . The paper shows that the detector of the cylindrical construction, supplied with a pulse voltage can be used for coulometric measurements and the voltage polarizing the cathode can cause an effect of hypercoulometry. 33 figs., 9 refs. (author)

  7. Current percolation and the V-I transition in YBa{sub 2}Cu{sub 3}O{sub 7} bicrystals and granular coated conductors

    Energy Technology Data Exchange (ETDEWEB)

    Evetts, J E; Hogg, M J; Glowacki, B A; Rutter, N A; Tsaneva, V N [Department of Materials Science and IRC in Superconductivity, University of Cambridge, Cambridge CB2 3QZ (United Kingdom)

    1999-07-01

    There is considerable interest in the dynamics of vortices in granular 'coated conductors' consisting of a 2D network of low angle grain boundaries (LAGBs). The V-I characteristic of the conductor is determined by a combination of flux vortex channelling along the grain boundaries and current percolation within the grain network.In this work it is shown that measurements of viscous flow for a YBa{sub 2}Cu{sub 3}O{sub 7} bicrystal LAGB can be applied in a statistical model that predicts the characteristic V-I response for a particular grain-to-grain dispersion of grain boundary angles. (author)

  8. High Voltage, Fast-Switching Module for Active Control of Magnetic Fields and Edge Plasma Currents

    Science.gov (United States)

    Ziemba, Timothy; Miller, Kenneth; Prager, James; Slobodov, Ilia

    2016-10-01

    Fast, reliable, real-time control of plasma is critical to the success of magnetic fusion science. High voltage and current supplies are needed to mitigate instabilities in all experiments as well as disruption events in large scale tokamaks for steady-state operation. Silicon carbide (SiC) MOSFETs offer many advantages over IGBTs including lower drive energy requirements, lower conduction and switching losses, and higher switching frequency capabilities; however, these devices are limited to 1.2-1.7 kV devices. As fusion enters the long-pulse and burning plasma eras, efficiency of power switching will be important. Eagle Harbor Technologies (EHT), Inc. developing a high voltage SiC MOSFET module that operates at 10 kV. This switch module utilizes EHT gate drive technology, which has demonstrated the ability to increase SiC MOSFET switching efficiency. The module will allow more rapid development of high voltage switching power supplies at lower cost necessary for the next generation of fast plasma feedback and control. EHT is partnering with the High Beta Tokamak group at Columbia to develop detailed high voltage module specifications, to ensure that the final product meets the needs of the fusion science community.

  9. Forward voltage short-pulse technique for measuring high power laser array junction temperature

    Science.gov (United States)

    Meadows, Byron L. (Inventor); Amzajerdian, Frazin (Inventor); Barnes, Bruce W. (Inventor); Baker, Nathaniel R. (Inventor)

    2012-01-01

    The present invention relates to a method of measuring the temperature of the P-N junction within the light-emitting region of a quasi-continuous-wave or pulsed semiconductor laser diode device. A series of relatively short and low current monitor pulses are applied to the laser diode in the period between the main drive current pulses necessary to cause the semiconductor to lase. At the sufficiently low current level of the monitor pulses, the laser diode device does not lase and behaves similar to an electronic diode. The voltage across the laser diode resulting from each of these low current monitor pulses is measured with a high degree of precision. The junction temperature is then determined from the measured junction voltage using their known linear relationship.

  10. Single-channel L-type Ca2+ currents in chicken embryo semicircular canal type I and type II hair cells.

    Science.gov (United States)

    Zampini, Valeria; Valli, Paolo; Zucca, Giampiero; Masetto, Sergio

    2006-08-01

    Few data are available concerning single Ca channel properties in inner ear hair cells and particularly none in vestibular type I hair cells. By using the cell-attached configuration of the patch-clamp technique in combination with the semicircular canal crista slice preparation, we determined the elementary properties of voltage-dependent Ca channels in chicken embryo type I and type II hair cells. The pipette solutions included Bay K 8644. With 70 mM Ba(2+) in the patch pipette, Ca channel activity appeared as very brief openings at -60 mV. Ca channel properties were found to be similar in type I and type II hair cells; therefore data were pooled. The mean inward current amplitude was -1.3 +/- 0.1 (SD) pA at - 30 mV (n = 16). The average slope conductance was 21 pS (n = 20). With 5 mM Ba(2+) in the patch pipette, very brief openings were already detectable at -80 mV. The mean inward current amplitude was -0.7 +/- 0.2 pA at -40 mV (n = 9). The average slope conductance was 11 pS (n = 9). The mean open time and the open probability increased significantly with depolarization. Ca channel activity was still present and unaffected when omega-agatoxin IVA (2 microM) and omega-conotoxin GVIA (3.2 microM) were added to the pipette solution. Our results show that types I and II hair cells express L-type Ca channels with similar properties. Moreover, they suggest that in vivo Ca(2+) influx might occur at membrane voltages more negative than -60 mV.

  11. Coherent Voltage Oscillations in Superconducting Polycrystalline Y1Ba2Cu3O7-x

    International Nuclear Information System (INIS)

    Altinkok, A; Yetis, H; Olutas, M; Kilic, K; Kilic, A; Cetin, O

    2006-01-01

    We have investigated the voltage response of superconducting polycrystalline bulk Y 1 Ba 2 Cu 3 O 7-x (YBCO) material to a bidirectional square wave current with long periods and dc current by means of the evolution of the voltage-time (V-t) curves near the critical temperature. In a well-defined range of amplitudes and periods of driving current, and temperatures, it was observed that a non-linear response to bidirectional square wave current rides on a time independent background voltage value and manifests itself as regular sinusoidal-like voltage oscillations. It was found that the non-linear response disappears when the bidirectional current was switched to dc current. The spectral content of the voltage oscillations analyzed by the Fast Fourier Transform of the corresponding V-t curves revealed that the fundamental harmonics is comparable to the frequency of bidirectional square wave current. The coherent voltage oscillations were discussed mainly in terms of the dynamic competition between pinning and depinning together with the disorder in the coupling strength between the superconducting grains (i.e Josephson coupling effects). The density fluctuations and semi-elastic coupling of the flux lines with the pinning centers were also considered as possible physical mechanisms in the interpretation of the experimental results

  12. Charge-pump voltage converter

    Science.gov (United States)

    Brainard, John P [Albuquerque, NM; Christenson, Todd R [Albuquerque, NM

    2009-11-03

    A charge-pump voltage converter for converting a low voltage provided by a low-voltage source to a higher voltage. Charge is inductively generated on a transfer rotor electrode during its transit past an inductor stator electrode and subsequently transferred by the rotating rotor to a collector stator electrode for storage or use. Repetition of the charge transfer process leads to a build-up of voltage on a charge-receiving device. Connection of multiple charge-pump voltage converters in series can generate higher voltages, and connection of multiple charge-pump voltage converters in parallel can generate higher currents. Microelectromechanical (MEMS) embodiments of this invention provide a small and compact high-voltage (several hundred V) voltage source starting with a few-V initial voltage source. The microscale size of many embodiments of this invention make it ideally suited for MEMS- and other micro-applications where integration of the voltage or charge source in a small package is highly desirable.

  13. Shunt resistance and saturation current determination in CdTe and CIGS solar cells. Part 1: a new theoretical procedure and comparison with other methodologies

    Science.gov (United States)

    Rangel-Kuoppa, Victor-Tapio; Albor-Aguilera, María-de-Lourdes; Hérnandez-Vásquez, César; Flores-Márquez, José-Manuel; González-Trujillo, Miguel-Ángel; Contreras-Puente, Gerardo-Silverio

    2018-04-01

    A new proposal for the extraction of the shunt resistance (R sh ) and saturation current (I sat ) of a current-voltage (I-V) measurement of a solar cell, within the one-diode model, is given. First, the Cheung method is extended to obtain the series resistance (R s ), the ideality factor (n) and an upper limit for I sat . In this article which is Part 1 of two parts, two procedures are proposed to obtain fitting values for R sh and I sat within some voltage range. These two procedures are used in two simulated I-V curves (one in darkness and the other one under illumination) to recover the known solar cell parameters R sh , R s , n, I sat and the light current I lig and test its accuracy. The method is compared with two different common parameter extraction methods. These three procedures are used and compared in Part 2 in the I-V curves of CdS-CdTe and CIGS-CdS solar cells.

  14. Rated-voltage enhancement by fast-breaking of the fault current for a resistive superconducting fault current limiter component

    International Nuclear Information System (INIS)

    Park, C.-R.; Kim, M.-J.; Yu, S.-D.; Yim, S.-W.; Kim, H.-R.; Hyun, O.-B.

    2010-01-01

    Performance of a resistive superconducting fault current limiter (SFCL) component is usually limited by temperature rise associated with energy input by fault current application during a fault. Therefore, it is expected that short application of the fault current may enhance the power ratings of the component. This can be accomplished by a combination of a HTS component and a mechanical switch. The fast switch (FS) developed recently enables the fault duration to be as short as 1/2 cycle after a fault. Various second-generation (2G) high temperature superconductors (HTS) and YBCO thin films have been tested. The relation between the rated voltage V and the fault duration time t was found to be V 2 ∼ t -1 . Based upon the relation, we predict that when the FS break the fault current within 1/2 cycle after a fault, the amount of HTS components required to build an SFCL can be reduced by as much as about 60%, of that when breaking the fault current at three cycles.

  15. Output voltage calculations in double barrier magnetic tunnel junctions with asymmetric voltage behavior

    KAUST Repository

    Useinov, Arthur

    2011-10-22

    In this paper we study the asymmetric voltage behavior (AVB) of the tunnel magnetoresistance (TMR) for single and double barrier magnetic tunnel junctions (MTJs) in range of a quasi-classical free electron model. Numerical calculations of the TMR-V curves, output voltages and I-V characteristics for negative and positive values of applied voltages were carried out using MTJs with CoFeB/MgO interfaces as an example. Asymmetry of the experimental TMR-V curves is explained by different values of the minority and majority Fermi wave vectors for the left and right sides of the tunnel barrier, which arises due to different annealing regimes. Electron tunneling in DMTJs was simulated in two ways: (i) Coherent tunneling, where the DMTJ is modeled as one tunnel system and (ii) consecutive tunneling, where the DMTJ is modeled by two single barrier junctions connected in series. © 2012 Elsevier B.V. All rights reserved.

  16. Low Noise Bias Current/Voltage References Based on Floating-Gate MOS Transistors

    DEFF Research Database (Denmark)

    Igor, Mucha

    1997-01-01

    The exploitation of floating-gate MOS transistors as reference current and voltage sources is investigated. Test structures of common source and common drain floating-gate devices have been implemented in a commercially available 0.8 micron double-poly CMOS process. The measurements performed...

  17. Frequency of V1016I and F1534C mutations in the voltage-gated sodium channel gene in Aedes aegypti in Venezuela.

    Science.gov (United States)

    Alvarez, Leslie C; Ponce, Gustavo; Saavedra-Rodriguez, Karla; Lopez, Beatriz; Flores, Adriana E

    2015-06-01

    The V1016I and F1534C mutations in the voltage-gated sodium channel gene have been associated with resistance to pyrethroids and DDT in Aedes aegypti mosquitoes. A study was carried out to determine the frequency of I1016 and C1534 by real-time PCR in five natural populations of Ae. aegypti in Venezuela during 2008, 2010 and 2012, as well as in a strain selected with 0.14 µg of deltamethrin for 15 generations. In natural populations, frequencies of I1016 varied between 0.01 and 0.37, and frequencies of C1534 between 0.35 and 1.0. In the Pampanito strain, the frequency of I1016 increased from 0.02 in F1 up to 0.5 in F15 and from 0.35 up to fixation for C1534 after selection with deltamethrin. The results showed that C1534 frequencies are higher than I1016 frequencies in natural populations of Ae. aegypti in Venezuela, and that deltamethrin selected the C1534 more rapidly than I1016. © 2014 Society of Chemical Industry.

  18. A 1.4-V 48-μW current-mode front-end circuit for analog hearing aids with frequency compensation

    International Nuclear Information System (INIS)

    Wang Xiaoyu; Yang Haigang; Li Fanyang; Yin Tao; Liu Fei

    2012-01-01

    A current-mode front-end circuit with low voltage and low power for analog hearing aids is presented. The circuit consists of a current-mode AGC (automatic gain control) and a current-mode adaptive filter. Compared with its conventional voltage-mode counterparts, the proposed front-end circuit has the identified features of frequency compensation based on the state space theory and continuous gain with an exponential characteristic. The frequency compensation which appears only in the DSP unit of the digital hearing aid can upgrade the performance of the analog hearing aid in the field of low-frequency hearing loss. The continuous gain should meet the requirement of any input amplitude level, while its exponential characteristic leads to a large input dynamic range in accordance with the dB SPL (sound pressure level). Furthermore, the front-end circuit also provides a discrete knee point and discrete compression ratio to allow for high calibration flexibility. These features can accommodate users whose ears have different pain thresholds. Taking advantage of the current-mode technique, the MOS transistors work in the subthreshold region so that the quiescent current is small. Moreover, the input current can be compressed to a low voltage signal for processing according to the compression principle from the current-domain to the voltage-domain. Therefore, the objective of low voltage and low power (48 μW at 1.4 V) can be easily achieved in a high threshold-voltage CMOS process of 0.35 μm (V TON + |V TOP |≈ 1.35 V). The THD is below −45 dB. The fabricated chip only occupies the area of 1 × 0.5 mm 2 and 1 × 1 mm 2 .

  19. Low-voltage organic thin film transistors (OTFTs) using crosslinked polyvinyl alcohol (PVA)/neodymium oxide (Nd2O3) bilayer gate dielectrics

    Science.gov (United States)

    Khound, Sagarika; Sarma, Ranjit

    2018-01-01

    We have reported here on the design, processing and dielectric properties of pentacene-based organic thin film transitors (OTFTs) with a bilayer gate dilectrics of crosslinked PVA/Nd2O3 which enables low-voltage organic thin film operations. The dielectric characteristics of PVA/Nd2O3 bilayer films are studied by capacitance-voltage ( C- V) and current-voltage ( I- V) curves in the metal-insulator-metal (MIM) structure. We have analysed the output electrical responses and transfer characteristics of the OTFT devices to determine their performance of OTFT parameters. The mobility of 0.94 cm2/Vs, the threshold voltage of - 2.8 V, the current on-off ratio of 6.2 × 105, the subthreshold slope of 0.61 V/decade are evaluated. Low leakage current of the device is observed from current density-electric field ( J- E) curve. The structure and the morphology of the device are studied using X-ray diffraction (XRD) and atomic force microscope (AFM), respectively. The study demonstrates an effective way to realize low-voltage, high-performance OTFTs at low cost.

  20. International comparison. High-precision comparison of voltages generated by SINIS and SIS Josephson junction arrays at the 10 mV level

    Energy Technology Data Exchange (ETDEWEB)

    Karpov, O.V.; Koutovoi, V.D.; Sherstobitov, S.V. [Institute for Physical-Technical and Radiotechnical Measurements, VNIIFTRI, Gostandart of Russia, Mendeleevo, Moscow Region (Russian Federation); Niemeyer, J. [Physikalisch-Technische Bundesanstalt, PTB, Braunschweig (Germany)

    2001-07-01

    A high-precision comparison of dc voltages generated by a 10 GHz SINIS (superconductor/insulator/normal/insulator/superconductor) Josephson non-hysteretic junction array and a 70 GHz SIS (superconductor/insulator/superconductor) Josephson junction array is described. The paper also describes a method of minimizing the Type A measurement uncertainty. The measurements were carried out at the 10 mV level. The agreement between both output voltages was determined to 0.2 nV with a Type A uncertainty of 0.5 nV. (authors)

  1. Investigation of nonlinear I–V behavior of CNTs filled polymer composites

    International Nuclear Information System (INIS)

    Wang, Jian; Yu, Shuhui; Luo, Suibin; Chu, Baojin; Sun, Rong; Wong, Ching-Ping

    2016-01-01

    Graphical abstract: - Highlights: • Mechanism of nonlinear behavior of the CNT composites was systematically investigated. • There are one linear region (I) and two nonlinear regions (II and III) in the I–V curves. • This phenomenon was analyzed based on hopping, tunneling and Joule heating effects. - Abstract: Nonlinear current–voltage (I–V) behavior is a typical feature of polymeric composites containing conductor or semiconductor fillers, which are desired to handle the transient voltage and electrostatic discharge (ESD) of microelectronic devices. In this paper, the mechanism of nonlinear behavior of carbon nanotubes (CNTs) filled polymer composites in the applied electric field was explored. The I–V curves of the composites exhibited three regions. The variation of current at low voltages (region I) is linear. Under relatively higher voltages (region II), the variation is nonlinear and grows rapidly with voltage. As the voltage is further increased, the I–V curve is still non-linear (region III), but the growth rate is significantly slowed down. The I–V characteristics in the above three regions were analyzed systematically based on the calculation of the electrons hopping from the conduction band of CNTs to epoxy, the induced current under electric field, as well as Joule-heating and tunneling effect.

  2. Current distribution measurements inside an electromagnetic plasma gun operated in a gas-puff mode

    OpenAIRE

    Poehlmann, Flavio R.; Cappelli, Mark A.; Rieker, Gregory B.

    2010-01-01

    Measurements are presented of the time-dependent current distribution inside a coaxial electromagnetic plasma gun. The measurements are carried out using an array of six axially distributed dual-Rogowski coils in a balanced circuit configuration. The radial current distributions indicate that operation in the gas-puff mode, i.e., the mode in which the electrode voltage is applied before injection of the gas, results in a stationary ionization front consistent with the presence of a plasma def...

  3. Two coupled Josephson junctions: dc voltage controlled by biharmonic current

    International Nuclear Information System (INIS)

    Machura, L; Spiechowicz, J; Kostur, M; Łuczka, J

    2012-01-01

    We study transport properties of two Josephson junctions coupled by an external shunt resistance. One of the junctions (say, the first) is driven by an unbiased ac current consisting of two harmonics. The device can rectify the ac current yielding a dc voltage across the first junction. For some values of coupling strength, controlled by an external shunt resistance, a dc voltage across the second junction can be generated. By variation of system parameters such as the relative phase or frequency of two harmonics, one can conveniently manipulate both voltages with high efficiency, e.g. changing the dc voltages across the first and second junctions from positive to negative values and vice versa. (paper)

  4. Observation of Sinusoidal Voltage Behaviour in Silver Doped YBCO

    Science.gov (United States)

    Altinkok, Atilgan; Olutas, Murat; Kilic, Kivilcim; Kilic, Atilla

    The influence of bi-directional square wave (BSW) current was investigated on the evolution of the V - t curves at different periods (P) , temperatures and external magnetic fields. It was observed that slow transport relaxation measurements result in regular sinusoidal voltage oscillations which were discussed mainly in terms of the dynamic competition between pinning and depinning.The symmetry in the voltage oscillations was attributed to the elastic coupling between the flux lines and the pinning centers along grain boundaries and partly inside the grains. This case was also correlated to the equality between flux entry and exit along the YBCO/Ag sample during regular oscillations. It was shown that the voltage oscillations can be described well by an empirical expression V (t) sin(wt + φ) . We found that the phase angle φgenerally takes different values for the repetitive oscillations. Fast Fourier Transform analysis of the V - t oscillations showed that the oscillation period is comparable to that (PI) of the BSW current. This finding suggests a physical mechanism associated with charge density waves (CDWs), and, indeed, the weakly pinned flux line system in YBCO/Ag resembles the general behavior of CDWs. At certain values of PI, amplitude of BSW current, H and T, the YBCO/Ag sample behaves like a double-integrator, since it converts the BSW current to sinusoidal voltage oscillations in time.

  5. High-voltage pulse generator for electron gun power supply

    International Nuclear Information System (INIS)

    Korenev, S.A.; Enchevich, I.B.; Mikhov, M.K.

    1987-01-01

    High-voltage pulse generator with combined capacitive and inductive energy storages for electron gun power supply is described. Hydrogen thyratron set in a short magnetic lense is a current breaker. Times of current interruption in thyratrons are in the range from 100 to 300 ns. With 1 kV charging voltage of capacitive energy storage 25 kV voltage pulse is obtained in the load. The given high-voltage pulse generator was used for supply of an electron gun generating 10-30 keV low-energy electron beam

  6. Resonant tunneling with high peak to valley current ratio in SiO2/nc-Si/SiO2 multi-layers at room temperature

    International Nuclear Information System (INIS)

    Chen, D. Y.; Sun, Y.; He, Y. J.; Xu, L.; Xu, J.

    2014-01-01

    We have investigated carrier transport in SiO 2 /nc-Si/SiO 2 multi-layers by room temperature current-voltage measurements. Resonant tunneling signatures accompanied by current peaks are observed. Carrier transport in the multi-layers were analyzed by plots of ln(I/V 2 ) as a function of 1/V and ln(I) as a function of V 1/2 . Results suggest that besides films quality, nc-Si and barrier sub-layer thicknesses are important parameters that restrict carrier transport. When thicknesses are both small, direct tunneling dominates carrier transport, resonant tunneling occurs only at certain voltages and multi-resonant tunneling related current peaks can be observed but with peak to valley current ratio (PVCR) values smaller than 1.5. When barrier thickness is increased, trap-related and even high field related tunneling is excited, causing that multi-current peaks cannot be observed clearly, only one current peak with higher PVCR value of 7.7 can be observed. While if the thickness of nc-Si is large enough, quantum confinement is not so strong, a broad current peak with PVCR value as high as 60 can be measured, which may be due to small energy difference between the splitting energy levels in the quantum dots of nc-Si. Size distribution in a wide range may cause un-controllability of the peak voltages

  7. Transport characteristics of n-ZnO/p-Si heterojunction as determined from temperature dependent current–voltage measurements

    Energy Technology Data Exchange (ETDEWEB)

    Djiokap, S.R. Tankio, E-mail: stive.tankiodjiokap@nmmu.ac.za; Urgessa, Z.N.; Mbulanga, C.M.; Venter, A.; Botha, J.R.

    2016-01-01

    Zinc oxide (ZnO) nanorods have been synthesized by a two-step chemical bath deposition process on silicon substrates having different dopant densities and orientations. Scanning electron microscopy and X-ray diffraction analysis reveal that the orientation of the Si substrate does not affect the orientation, distribution or crystallinity of the nanostructures. The electrical properties of the ZnO/Si heterojunction are also investigated by current–voltage (I–V) measurements. The ideality factor is found to be 2.6 at 295 K, indicating that complex current transport mechanisms are at play. Temperature dependent I–V characteristics have been used to determine the dominant transport mechanism. The experimental results suggest that in the low bias region the current is dominated by a trap assisted multi-step tunneling process.

  8. Voltage Analysis Improvement of 150 kV Transmission Subsystem Using Static Synchronous Compensator (STATCOM)

    Science.gov (United States)

    Akbar, P. A.; Hakim, D. L.; Sucita, T.

    2018-02-01

    In this research, testing improvements to the distribution voltage electricity at 150 kV transmission subsystem Bandung Selatan and New Ujungberung using Flexible AC Transmission System (FACTS) technology. One of them is by doing the control of active and reactive power through the power electronics equipment Static Synchronous Compensator (STATCOM). The subsystem is tested because it has a voltage profile are relatively less well when based on the IEEE / ANSI C.84.1 (142.5 - 157.5 kV). This study was conducted by analyzing the Newton-Raphson power flow on the simulator DigSilent Power Factory 15 to determine the profile of the voltage (V) on the system. Bus which has the lowest voltage to be a reference in the installation of STATCOM. From this research is known that the voltage on the conditions of the existing bus 28, as many as 21-23 still below standard buses (142.5 kV), after the installation is done using STATCOM, voltage on the buses improved by increasing the number of tracks that follow the standard / is in the range 142.5 kV -157.5 kV as many as 23-27 buses or 78.6% - 96%, with the optimum mounting on a bus Rancaekek STATCOM II with a capacity of 300 MVA.

  9. Development of 66 kV/6.9 kV 2 MV A prototype HTS power transformer

    International Nuclear Information System (INIS)

    Bohno, T.; Tomioka, A.; Imaizumi, M.; Sanuki, Y.; Yamamoto, T.; Yasukawa, Y.; Ono, H.; Yagi, Y.; Iwadate, K.

    2005-01-01

    We have developed the technology of the producing a HTS magnet for the power transformer. Three subjects have been mainly studied, high voltage technologies, large current and low AC loss technologies and sub-cooling system technologies to establish the technology of 66 kV/6.9 kV 10 MV A class HTS power transformer. In order to verify the validity of elemental technologies, such as high voltage technologies, large current and low AC loss technologies and sub-cooling system technologies, single-phase 2 MV A class 66 kV/6.9 kV prototype HTS transformer was manufactured and tested. In the load loss (AC loss) measurement, it was obtained that the measured value of 633 W was almost corresponding to the calculated value of 576 W at the rated operation of 2 MV A. Moreover, the breakdown was not found all voltage withstand test. These test results indicate that elemental technologies were established for the development of 66 kV/6.9 kV 10 MV A class HTS power transformer

  10. Investigation of Current Induced Spin Polarization in III-V Semiconductor Epilayers

    Science.gov (United States)

    Luengo-Kovac, Marta

    In the development of a semiconductor spintronics device, a thorough understanding of spin dynamics in semiconductors is necessary. In particular, electrical control of electron spins is advantageous for its compatibility with present day electronics. In this thesis, we will discuss the electrical modification of the electron g-factor, which characterizes the strength of the interaction between a spin and a magnetic field, as well as investigate electrically generated spin polarizations as a function of various material parameters. We report on the modification of the electron g-factor by an in-plane electric field in an InGaAs epilayer. We performed external magnetic field scans of the Kerr rotation of the InGaAs film in order to measure the g-factor independently of the spin-orbit fields. The g-factor increases from -0.4473(0.0001) at 0 V/cm to -0.4419( 0.0001) at 50 V/cm applied along the [110] crystal axis. A comparison of temperature and voltage dependent photoluminescence measurements indicate that minimal channel heating occurs at these voltages. Possible explanations for this g-factor modification are discussed, including an increase in the electron temperature that is independent of the lattice temperature and the modification of the donor-bound electron wave function by the electric field. The current-induced spin polarization and momentum-dependent spin-orbit field were measured in InGaAs epilayers with varying indium concentrations and silicon doping densities. Samples with higher indium concentrations and carrier concentrations and lower mobilities were found to have larger electrical spin generation efficiencies. Furthermore, current-induced spin polarization was detected in GaAs epilayers despite the absence of measurable spin-orbit fields, indicating that the spin polarization mechanism is extrinsic. Temperature-dependent measurements of the spin dephasing rates and mobilities were used to characterize the relative strengths of the intrinsic D

  11. An AMOLED AC-Biased Pixel Design Compensating the Threshold Voltage and I-R Drop

    Directory of Open Access Journals (Sweden)

    Ching-Lin Fan

    2011-01-01

    Full Text Available We propose a novel pixel design and an AC bias driving method for active-matrix organic light-emitting diode (AM-OLED displays using low-temperature polycrystalline silicon thin-film transistors (LTPS-TFTs. The proposed threshold voltage and I-R drop compensation circuit, which comprised three transistors and one capacitor, have been verified to supply uniform output current by simulation work using the Automatic Integrated Circuit Modeling Simulation Program with Integrated Circuit Emphasis (AIM-SPICE simulator. The simulated results demonstrate excellent properties such as low error rate of OLED anode voltage variation (<0.7% and low voltage drop of VDD power line. The proposed pixel circuit effectively enables threshold-voltage-deviation correction of driving TFT and compensates for the voltage drop of VDD power line using AC bias on OLED cathode.

  12. Submicrosecond linear pulse transformer for 800 kV voltage with modular low-inductance primary power supply

    Energy Technology Data Exchange (ETDEWEB)

    Bykov, Yu. A.; Krastelev, E. G., E-mail: ekrastelev@yandex.ru; Popov, G. V.; Sedin, A. A.; Feduschak, V. F. [Russian Academy of Sciences, Joint Institute for High Temperatures (Russian Federation)

    2016-12-15

    A pulsed power source with voltage amplitude up to 800 kV for fast charging (350–400 ns) of the forming line of a high-current nanosecond accelerator is developed. The source includes capacitive energy storage and a linear pulse transformer. The linear transformer consists of a set of 20 inductors with circular ferromagnetic cores surrounded by primary windings inside of which a common stock adder of voltage with film-glycerol insulation is placed. The primary energy storage consists of ten modules, each of which is a low-inductance assembly of two capacitors with a capacitance of 0.35 μF and one gas switch mounted in the same frame. The total energy stored in capacitors is 5.5 kJ at the operating voltage of 40 kV. According to test results, the parameters of the equivalent circuit of the source are the following: shock capacitance = 17.5 nF, inductance = 2 μH, resistance = 3.2 Ω.

  13. Influence of bias voltage on the stability of CsI photocathodes exposed to air

    CERN Document Server

    Nitti, M A; Nappi, E; Singh, B K; Valentini, A

    2002-01-01

    We describe a possible correlation between the bias voltage applied to the substrate during the growth of CsI photocathodes and the variation of quantum efficiency (QE) after one day exposure to humid air. It was found that fresh samples are much less sensitive to humid air when a high negative bias voltage was applied during film growth. A model based on surface film interaction with water molecules is presented for the observed effect. X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) measurements have been performed to examine, respectively, the bulk structure and the surface of fresh and exposed CsI samples. Also reported are transmittance measurements for fresh and aged CsI samples in the wavelength range 190-850 nm.

  14. Balanced Current Control Strategy for Current Source Rectifier Stage of Indirect Matrix Converter under Unbalanced Grid Voltage Conditions

    Directory of Open Access Journals (Sweden)

    Yeongsu Bak

    2016-12-01

    Full Text Available This paper proposes a balanced current control strategy for the current source rectifier (CSR stage of an indirect matrix converter (IMC under unbalanced grid voltage conditions. If the three-phase grid connected to the voltage source inverter (VSI of the IMC has unbalanced voltage conditions, it affects the currents of the CSR stage and VSI stage, and the currents are distorted. Above all, the distorted currents of the CSR stage cause instability in the overall system, which can affect the life span of the system. Therefore, in this paper, a control strategy for balanced currents in the CSR stage is proposed. To achieve balanced currents in the CSR stage, the VSI stage should receive DC power without ripple components from the CSR stage. This is implemented by controlling the currents in the VSI stage. Therefore, the proposed control strategy decouples the positive and negative phase-sequence components existing in the unbalanced voltages and currents of the VSI stage. Using the proposed control strategy under unbalanced grid voltage conditions, the stability and life span of the overall system can be improved. The effectiveness of the proposed control strategy is verified by simulation and experimental results.

  15. Analysis of bias voltage dependent spectral response in Ga0.51In0.49P/Ga0.99In0.01As/Ge triple junction solar cell

    International Nuclear Information System (INIS)

    Sogabe, Tomah; Ogura, Akio; Okada, Yoshitaka

    2014-01-01

    Spectral response measurement plays great role in characterizing solar cell device because it directly reflects the efficiency by which the device converts the sunlight into an electrical current. Based on the spectral response results, the short circuit current of each subcell can be quantitatively determined. Although spectral response dependence on wavelength, i.e., the well-known external quantum efficiency (EQE), has been widely used in characterizing multijunction solar cell and has been well interpreted, detailed analysis of spectral response dependence on bias voltage (SR −V bias ) has not been reported so far. In this work, we have performed experimental and numerical studies on the SR −V bias for Ga 0.51 In 0.49 P/Ga 0.99 In 0.01 As/Ge triple junction solar cell. Phenomenological description was given to clarify the mechanism of operation matching point variation in SR −V bias measurements. The profile of SR−V bias curve was explained in detail by solving the coupled two-diode current-voltage characteristic transcend formula for each subcell

  16. Depolarization of the conductance-voltage relationship in the NaV1.5 mutant, E1784K, is due to altered fast inactivation

    Science.gov (United States)

    Yu, Alec; Zhu, Wandi; Silva, Jonathan R.; Ruben, Peter C.

    2017-01-01

    E1784K is the most common mixed long QT syndrome/Brugada syndrome mutant in the cardiac voltage-gated sodium channel NaV1.5. E1784K shifts the midpoint of the channel conductance-voltage relationship to more depolarized membrane potentials and accelerates the rate of channel fast inactivation. The depolarizing shift in the midpoint of the conductance curve in E1784K is exacerbated by low extracellular pH. We tested whether the E1784K mutant shifts the channel conductance curve to more depolarized membrane potentials by affecting the channel voltage-sensors. We measured ionic currents and gating currents at pH 7.4 and pH 6.0 in Xenopus laevis oocytes. Contrary to our expectation, the movement of gating charges is shifted to more hyperpolarized membrane potentials by E1784K. Voltage-clamp fluorimetry experiments show that this gating charge shift is due to the movement of the DIVS4 voltage-sensor being shifted to more hyperpolarized membrane potentials. Using a model and experiments on fast inactivation-deficient channels, we show that changes to the rate and voltage-dependence of fast inactivation are sufficient to shift the conductance curve in E1784K. Our results localize the effects of E1784K to DIVS4, and provide novel insight into the role of the DIV-VSD in regulating the voltage-dependencies of activation and fast inactivation. PMID:28898267

  17. Depolarization of the conductance-voltage relationship in the NaV1.5 mutant, E1784K, is due to altered fast inactivation.

    Directory of Open Access Journals (Sweden)

    Colin H Peters

    Full Text Available E1784K is the most common mixed long QT syndrome/Brugada syndrome mutant in the cardiac voltage-gated sodium channel NaV1.5. E1784K shifts the midpoint of the channel conductance-voltage relationship to more depolarized membrane potentials and accelerates the rate of channel fast inactivation. The depolarizing shift in the midpoint of the conductance curve in E1784K is exacerbated by low extracellular pH. We tested whether the E1784K mutant shifts the channel conductance curve to more depolarized membrane potentials by affecting the channel voltage-sensors. We measured ionic currents and gating currents at pH 7.4 and pH 6.0 in Xenopus laevis oocytes. Contrary to our expectation, the movement of gating charges is shifted to more hyperpolarized membrane potentials by E1784K. Voltage-clamp fluorimetry experiments show that this gating charge shift is due to the movement of the DIVS4 voltage-sensor being shifted to more hyperpolarized membrane potentials. Using a model and experiments on fast inactivation-deficient channels, we show that changes to the rate and voltage-dependence of fast inactivation are sufficient to shift the conductance curve in E1784K. Our results localize the effects of E1784K to DIVS4, and provide novel insight into the role of the DIV-VSD in regulating the voltage-dependencies of activation and fast inactivation.

  18. The Voltage-Sensing Domain of K(v)7.2 Channels as a Molecular Target for Epilepsy-Causing Mutations and Anticonvulsants.

    Science.gov (United States)

    Miceli, Francesco; Soldovieri, Maria Virginia; Iannotti, Fabio Arturo; Barrese, Vincenzo; Ambrosino, Paolo; Martire, Maria; Cilio, Maria Roberta; Taglialatela, Maurizio

    2011-01-01

    Understanding the molecular mechanisms underlying voltage-dependent gating in voltage-gated ion channels (VGICs) has been a major effort over the last decades. In recent years, changes in the gating process have emerged as common denominators for several genetically determined channelopathies affecting heart rhythm (arrhythmias), neuronal excitability (epilepsy, pain), or skeletal muscle contraction (periodic paralysis). Moreover, gating changes appear as the main molecular mechanism by which several natural toxins from a variety of species affect ion channel function. In this work, we describe the pathophysiological and pharmacological relevance of the gating process in voltage-gated K(+) channels encoded by the K(v)7 gene family. After reviewing the current knowledge on the molecular mechanisms and on the structural models of voltage-dependent gating in VGICs, we describe the physiological relevance of these channels, with particular emphasis on those formed by K(v)7.2-K(v)7.5 subunits having a well-established role in controlling neuronal excitability in humans. In fact, genetically determined alterations in K(v)7.2 and K(v)7.3 genes are responsible for benign familial neonatal convulsions, a rare seizure disorder affecting newborns, and the pharmacological activation of K(v)7.2/3 channels can exert antiepileptic activity in humans. Both mutation-triggered channel dysfunction and drug-induced channel activation can occur by impeding or facilitating, respectively, channel sensitivity to membrane voltage and can affect overlapping molecular sites within the voltage-sensing domain of these channels. Thus, understanding the molecular steps involved in voltage-sensing in K(v)7 channels will allow to better define the pathogenesis of rare human epilepsy, and to design innovative pharmacological strategies for the treatment of epilepsies and, possibly, other human diseases characterized by neuronal hyperexcitability.

  19. Branching in current-voltage characteristics of intrinsic Josephson junctions

    International Nuclear Information System (INIS)

    Shukrinov, Yu M; Mahfouzi, F

    2007-01-01

    We study branching in the current-voltage characteristics of the intrinsic Josephson junctions of high-temperature superconductors in the framework of the capacitively coupled Josephson junction model with diffusion current. A system of dynamical equations for the gauge-invariant phase differences between superconducting layers for a stack of ten intrinsic junctions has been numerically solved. We have obtained a total branch structure in the current-voltage characteristics. We demonstrate the existence of a 'breakpoint region' on the current-voltage characteristics and explain it as a result of resonance between Josephson and plasma oscillations. The effect of the boundary conditions is investigated. The existence of two outermost branches and correspondingly two breakpoint regions for the periodic boundary conditions is shown. One branch, which is observed only at periodic boundary conditions, corresponds to the propagating of the plasma mode. The second one corresponds to the situation when the charge oscillations on the superconducting layers are absent, excluding the breakpoint. A time dependence of the charge oscillations at breakpoints is presented

  20. Electrical characterization of polymer matrix — TiO2 filler composites through isothermal polarization / depolarization currents and I-V tests

    Science.gov (United States)

    Stavrakas, Ilias; Triantis, Dimos; Hloupis, George; Moutzouris, Konstantinos

    2014-04-01

    Specimens of polymer matrix — ceramic TiO2 filler composites were prepared. The contribution of the filler content on the electrical conductivity and energy storage properties of the samples was examined. I-V and Isothermal Polarization/Depolarization Current (IPC/IDC) measurements were conducted. Dc conductivity values directly calculated from the I-V curves exhibited excellent agreement with corresponding values derived from the IPC/IDC recordings. Standard models were employed for fitting the IPC/IDC data. In specific, the short and the very long depolarization times were fitted by use of power laws of different slopes, while the intermediate depolarization times were fitted as a sum of three exponential decays. The present study reveals a strong dependence of the depolarization and polarization processes, as well as of the dc conductivity, on the filler concentration.

  1. A transient-enhanced NMOS low dropout voltage regulator with parallel feedback compensation

    International Nuclear Information System (INIS)

    Wang Han; Tan Lin

    2016-01-01

    This paper presents a transient-enhanced NMOS low-dropout regulator (LDO) for portable applications with parallel feedback compensation. The parallel feedback structure adds a dynamic zero to get an adequate phase margin with a load current variation from 0 to 1 A. A class-AB error amplifier and a fast charging/discharging unit are adopted to enhance the transient performance. The proposed LDO has been implemented in a 0.35 μm BCD process. From experimental results, the regulator can operate with a minimum dropout voltage of 150 mV at a maximum 1 A load and I Q of 165 μA. Under the full range load current step, the voltage undershoot and overshoot of the proposed LDO are reduced to 38 mV and 27 mV respectively. (paper)

  2. Molecular Surface of JZTX-V (β-Theraphotoxin-Cj2a Interacting with Voltage-Gated Sodium Channel Subtype NaV1.4

    Directory of Open Access Journals (Sweden)

    Ji Luo

    2014-07-01

    Full Text Available Voltage-gated sodium channels (VGSCs; NaV1.1–NaV1.9 have been proven to be critical in controlling the function of excitable cells, and human genetic evidence shows that aberrant function of these channels causes channelopathies, including epilepsy, arrhythmia, paralytic myotonia, and pain. The effects of peptide toxins, especially those isolated from spider venom, have shed light on the structure–function relationship of these channels. However, most of these toxins have not been analyzed in detail. In particular, the bioactive faces of these toxins have not been determined. Jingzhaotoxin (JZTX-V (also known as β-theraphotoxin-Cj2a is a 29-amino acid peptide toxin isolated from the venom of the spider Chilobrachys jingzhao. JZTX-V adopts an inhibitory cysteine knot (ICK motif and has an inhibitory effect on voltage-gated sodium and potassium channels. Previous experiments have shown that JZTX-V has an inhibitory effect on TTX-S and TTX-R sodium currents on rat DRG cells with IC50 values of 27.6 and 30.2 nM, respectively, and is able to shift the activation and inactivation curves to the depolarizing and the hyperpolarizing direction, respectively. Here, we show that JZTX-V has a much stronger inhibitory effect on NaV1.4, the isoform of voltage-gated sodium channels predominantly expressed in skeletal muscle cells, with an IC50 value of 5.12 nM, compared with IC50 values of 61.7–2700 nM for other heterologously expressed NaV1 subtypes. Furthermore, we investigated the bioactive surface of JZTX-V by alanine-scanning the effect of toxin on NaV1.4 and demonstrate that the bioactive face of JZTX-V is composed of three hydrophobic (W5, M6, and W7 and two cationic (R20 and K22 residues. Our results establish that, consistent with previous assumptions, JZTX-V is a Janus-faced toxin which may be a useful tool for the further investigation of the structure and function of sodium channels.

  3. Effect of 50 and 80 MeV phosphorous ions on the contribution of interface and oxide state density in n-channel MOSFETs

    Energy Technology Data Exchange (ETDEWEB)

    Shinde, N.S.; Dhole, S.D.; Kanjilal, D.; Bhoraskar, V.N. E-mail: vnb@physics.unipune.ernet.in

    1999-07-02

    n-channel depletion MOS devices were irradiated with 50 and 80 MeV phosphorous ions, with different fluences varying in the range from 10{sup 11} to 10{sup 13} ions/cm{sup 2}. The pre and post irradiation I-V characteristics were measured and the corresponding threshold shift {delta}V{sub TH} was estimated. In both the cases, the drain current I{sub D} and the threshold voltage V{sub TH} were found to decrease with the ion fluence. The increase in the threshold voltage shift {delta}V{sub TH} with the ion fluence, was greater for the devices irradiated with 80 MeV ions than those irradiated with 50 MeV ions. The interface and oxide state densities were determined through the subthreshold voltage measurements. To separate the contributions of oxide and interface states towards the threshold voltage shift, the ion irradiated MOS devices were annealed at 150 deg. C. The threshold shift during annealing initially decreased and later increased with increasing annealing period. The rate of change of the interface states during annealing was higher than that of the oxide states. It was also found that depletion mode (normally ON) MOSFETs switched operation to enhancement mode (normally OFF)

  4. A Generalised Fault Protection Structure Proposed for Uni-grounded Low-Voltage AC Microgrids

    Science.gov (United States)

    Bui, Duong Minh; Chen, Shi-Lin; Lien, Keng-Yu; Jiang, Jheng-Lun

    2016-04-01

    This paper presents three main configurations of uni-grounded low-voltage AC microgrids. Transient situations of a uni-grounded low-voltage (LV) AC microgrid (MG) are simulated through various fault tests and operation transition tests between grid-connected and islanded modes. Based on transient simulation results, available fault protection methods are proposed for main and back-up protection of a uni-grounded AC microgrid. In addition, concept of a generalised fault protection structure of uni-grounded LVAC MGs is mentioned in the paper. As a result, main contributions of the paper are: (i) definition of different uni-grounded LVAC MG configurations; (ii) analysing transient responses of a uni-grounded LVAC microgrid through line-to-line faults, line-to-ground faults, three-phase faults and a microgrid operation transition test, (iii) proposing available fault protection methods for uni-grounded microgrids, such as: non-directional or directional overcurrent protection, under/over voltage protection, differential current protection, voltage-restrained overcurrent protection, and other fault protection principles not based on phase currents and voltages (e.g. total harmonic distortion detection of currents and voltages, using sequence components of current and voltage, 3I0 or 3V0 components), and (iv) developing a generalised fault protection structure with six individual protection zones to be suitable for different uni-grounded AC MG configurations.

  5. Analysis of NSTX TF Joint Voltage Measurements

    International Nuclear Information System (INIS)

    Woolley R

    2005-01-01

    This report presents findings of analyses of recorded current and voltage data associated with 72 electrical joints operating at high current and high mechanical stress. The analysis goal was to characterize the mechanical behavior of each joint and thus evaluate its mechanical supports. The joints are part of the toroidal field (TF) magnet system of the National Spherical Torus Experiment (NSTX) pulsed plasma device operating at the Princeton Plasma Physics Laboratory (PPPL). Since there is not sufficient space near the joints for much traditional mechanical instrumentation, small voltage probes were installed on each joint and their voltage monitoring waveforms have been recorded on sampling digitizers during each NSTX ''shot''

  6. Current source converter based D-STATCOM for voltage sag mitigation

    Directory of Open Access Journals (Sweden)

    Singh Moirangthem Deben

    2015-01-01

    Full Text Available This paper presents a novel method of realizing one of the custom power controllers, the distribution static synchronous compensator (D-STATCOM using current source converter (CSC topology. Almost all the custom power controllers such as dynamic voltage restorer (DVR, unified power quality conditioner (UPQC including D-STATCOM are generally designed and implemented by using voltage source converters (VSC and not much research publications with CSC based approach has been reported over the last one decade. Since the D-STATCOM is a current injection device, its performance can be improved when realized by a current-source converter which can generate a controllable current directly at its output terminals and offers many advantageous features. In this paper, an attempt has been made to study the performance of a CSC based D-STATCOM suitable for use in the power distribution system in order to mitigate voltage sag and improve power quality. The proposed model uses a three leg CSC whose switching strategy is based on sinusoidal pulse width modulation (SPWM. The model has been simulated in the Matlab/Simulink environment. The results of the simulation runs under steady state and dynamic load perturbation provide excellent voltage and current waveforms that support the justification of the proposed model.

  7. Effect of Electric Voltage and Current of X-ray Chamber on the Element inthe Zirconium Alloy Analysis X-ray by X-ray Fluorescence

    International Nuclear Information System (INIS)

    Yusuf-Nampira; Narko-Wibowo, L; Rosika-Krisnawati; Nudia-Barenzani

    2000-01-01

    The using of x-ray fluorescence in the chemical analysis depend heavilyon the parameters of x-ray chamber, for examples : electric voltage andelectric current. That parameter give effect in the result of determine ofSn, Cr, Fe and Ni in the zirconium alloy. 20 kV electric voltages are used onthe Mo x-ray chamber shall product x-ray of zirconium in the sample materialcan give effect in the stability of the analysis result (deviation more than5%). The result of analysis of elements in the zirconium alloy shall givedeviation less than 5% when using of electric voltage of the x-ray chamberless than 19 kV. The sensitivity of analysis can be reached by step upelectric current of x-ray chamber. (author)

  8. Study of leakage current behaviour on artificially polluted surface of ceramic insulator

    International Nuclear Information System (INIS)

    Subba Reddy, B.; Nagabhushana, G.R.

    2003-01-01

    This paper presents the results of the study concerning to the leakage current behaviour on artificially polluted ceramic insulator surface. From the present study it was observed that there is a reasonably well-defined inception of current i.e. scintillations at a finite voltage. The corresponding voltages for extinction of the current are in the range of 0.8 kV to 2.1 kV. Obviously, the dry band formed in the immediate vicinity of the pin prevents smooth current flow as the voltage rises from zero. Only when the voltage is adequate it causes a flashover of the dray band and current starts flowing. As is common in similar current extinction phenomena, here also, the extinction voltages are significantly lower than the inception voltages. Further, the voltage-current curves invariably show hysteresis-the leakage currents are lower in the reducing portion of the voltage. This is obviously due to drying of the wet pollutant layer thereby increasing its resistance. It is believed that this is the first time that such a direct quantitative evidence of drying in individual half cycles is experimentally visualized

  9. Characteristics of output voltage and current of integrated nanogenerators

    KAUST Repository

    Yang, Rusen

    2009-01-01

    Owing to the anisotropic property and small output signals of the piezoelectric nanogenerators (NGs) and the influence of the measurement system and environment, identification of the true signal generated by the NG is critical. We have developed three criteria: Schottky behavior test, switching-polarity tests, and linear superposition of current and voltage tests. The 11 tests can effectively rule out the system artifacts, whose sign does not change with the switching measurement polarity, and random signals, which might change signs but cannot consistently add up or cancel out under designed connection configurations. This study establishes the standards for designing and scale up of integrated nanogenerators. © 2009 American Institute of Physics.

  10. Calorimetric method for current sharing temperature measurements in ITER conductor samples in SULTAN

    International Nuclear Information System (INIS)

    Bagnasco, M.

    2009-01-01

    Several Toroidal Field Conductor short samples with slight layout variations have been assembled and tested in the SULTAN facility at CRPP. The measurement campaigns started in 2007 and are still ongoing. The performance of every conductor is expressed in terms of current sharing temperature (T cs ), i.e. the temperature at which a defined electric field, 10 μV/m, is detected in the cable due to the incipient superconducting-to-normal state transition. The T cs at specific operating conditions is the key design parameter for the ITER conductors and is the main object of the qualification tests. Typically, the average electric field is measured with voltage tap pairs attached on the jacket along the conductor. The inability however to explain observed premature voltage developments opened the discussion about possible alternative measuring methods. The He flow calorimetric method is based on the measurement of the resistive power generation in the conductor. It relies on the detection of very small temperature increases along the conductor in steady state operation. The accuracy and the reliability of the calorimetric method in SULTAN are critically discussed, with particular emphasis on the instrumentation requirements and test procedures. The application of the calorimetric method to the recent SULTAN test campaigns is described with its merits and limits. For future tests of ITER conductors in SULTAN, the calorimetric method for T cs test is proposed as a routine procedure.

  11. Measurements of impedances for determinating the minimum short-circuit current in main systems 500 V of underground mining establishments

    Energy Technology Data Exchange (ETDEWEB)

    Rittinghaus, D

    1981-09-01

    The complex short-circuit impedances of energized low-voltage main systems were measured with a double-bridge in underground mining operation. The magnitude of the short-circuit currents depends on these impedances. Customary calculations of such currents depend on empirical approximations. To verify the accuracy of these approximations, the measured impedances of 61 nodes in three different main systems were compared with the results of the calculations. The comparison made between the short-circuit currents determined by measurable quantities and the values calculated according to VDE 0118 shows that the stipulated coefficients for calculating the minimum short-circuit currents lie very far on the safe side. An amendment for calculating the short-circuit in accordance with VDE 0118 is therefore suggested.

  12. Experiments of a 100 kV-level pulse generator based on metal-oxide varistor

    Science.gov (United States)

    Cui, Yan-cheng; Wu, Qi-lin; Yang, Han-wu; Gao, Jing-ming; Li, Song; Shi, Cheng-yu

    2018-03-01

    This paper introduces the development and experiments of a 100 kV-level pulse generator based on a metal-oxide varistor (MOV). MOV has a high energy handling capacity and nonlinear voltage-current (V-I) characteristics, which makes it useful for high voltage pulse shaping. Circuit simulations based on the measured voltage-current characteristics of MOV verified the shaping concept and showed that a circuit containing a two-section pulse forming network (PFN) will result in better defined square pulse than a simple L-C discharging circuit. A reduced-scale experiment was carried out and the result agreed well with simulation prediction. Then a 100 kV-level pulse generator with multiple MOVs in a stack and a two-section pulse forming network (PFN) was experimented. A pulse with a voltage amplitude of 90 kV, rise time of about 50 ns, pulse width of 500 ns, and flat top of about 400 ns was obtained with a water dummy load of 50 Ω. The results reveal that the combination of PFN and MOV is a practical way to generate high voltage pulses with better flat top waveforms, and the load voltage is stable even if the load's impedance varies. Such pulse generator can be applied in many fields such as surface treatment, corona plasma generation, industrial dedusting, and medical disinfection.

  13. PC-based control of a high-voltage injector

    International Nuclear Information System (INIS)

    Constantin, F.

    1998-01-01

    The stability of high voltage injectors is one of the major problems in any accelerator system. Most of the troubles encountered in the normal operation of an accelerator are connected with the ion source and associated high voltage platforms, regardless of the source or high voltage generator type. The quality of the ion beam injected in the accelerator strongly depends on the power supplies used in the injector and on the ability to control the non-electrical parameters (gas-flow, temperature, etc.). A wide used method in controlling is based on optical links between high-voltage platform and computer, the adjustments being more or less automated. Although the method mentioned above can be still useful in injector control, a different approach is presented in this work, i.e., the computer itself is placed inside the high-voltage terminal. Only one optical link is still necessary to connect this computer with an user-friendly host at ground potential. Requirements: - varying and monitoring the filament current; - gas flow control in the ion source; - reading the vacuum values; - current and voltage control for the anodic, magnet, extraction, suppression and lens' sources. Even in the high voltage terminal there are compartments with different voltages regardless the floating ground. In our injector the extraction voltage is applied on the top of the ion source including the filament and the anodic voltage. The extraction voltage is of maximum 30 kV. In this situation a second optical link is required to transfer the control for the anodic and magnet source power supply assuming the dedicated computer on the floating ground. One PC is placed inside the high voltage terminal and one PC outside the injector. The optical link (more precisely two optical wires) connects the serial ports. The inside computer is equipped with two multipurpose ADC/DAC and digital I/O card. They permit to read or output DC levels ranging between 0 to 10 volts or TTL signals. The filament

  14. BPW34 Commercial p-i-n Diodes for High-Level 1-MeV Neutron Equivalent Fluence Monitoring

    CERN Document Server

    Ravotti, F; Moll, M; Saigne, F

    2008-01-01

    The BPW34 p-i-n diode was characterized at CERN in view of its utilization as radiation monitor at the LHC to cover the broad 1-MeV neutron equivalent fluence (Phieq) range expected for the LHC machine and experiments during operation. Electrical measurements for both forward and reverse bias were used to characterize the device and to understand its behavior under irradiation. When the device is powered forward, a sensitivity to fast hadrons for Phieq > 2 times1012 cm-2 has been observed. With increasing particle fluences the forward I- V characteristics of the diode shifts towards higher voltages. At Phieq > 3times1013 cm-2, the forward characteristic starts to bend back assuming a thyristor-like behavior. An explanation for this phenomenon is given in this article. Finally, detailed radiation-response curves for the forward bias-operation and annealing studies of the diode's forward voltage are presented for proton, neutron and gamma irradiation.

  15. The CaV2.3 R-type voltage-gated Ca2+ channel in mouse sleep architecture.

    Science.gov (United States)

    Siwek, Magdalena Elisabeth; Müller, Ralf; Henseler, Christina; Broich, Karl; Papazoglou, Anna; Weiergräber, Marco

    2014-05-01

    Voltage-gated Ca(2+) channels (VGCCs) are key elements in mediating thalamocortical rhythmicity. Low-voltage activated (LVA) CaV 3 T-type Ca(2+) channels have been related to thalamic rebound burst firing and to generation of non-rapid eye movement (NREM) sleep. High-voltage activated (HVA) CaV 1 L-type Ca(2+) channels, on the opposite, favor the tonic mode of action associated with higher levels of vigilance. However, the role of the HVA Non-L-type CaV2.3 Ca(2+) channels, which are predominantly expressed in the reticular thalamic nucleus (RTN), still remains unclear. Recently, CaV2.3(-/-) mice were reported to exhibit altered spike-wave discharge (SWD)/absence seizure susceptibility supported by the observation that CaV2.3 mediated Ca(2+) influx into RTN neurons can trigger small-conductance Ca(2+)-activated K(+)-channel type 2 (SK2) currents capable of maintaining thalamic burst activity. Based on these studies we investigated the role of CaV2.3 R-type Ca(2+) channels in rodent sleep. The role of CaV2.3 Ca(2+) channels was analyzed in CaV2.3(-/-) mice and controls in both spontaneous and artificial urethane-induced sleep, using implantable video-EEG radiotelemetry. Data were analyzed for alterations in sleep architecture using sleep staging software and time-frequency analysis. CaV2.3 deficient mice exhibited reduced wake duration and increased slow-wave sleep (SWS). Whereas mean sleep stage durations remained unchanged, the total number of SWS epochs was increased in CaV2.3(-/-) mice. Additional changes were observed for sleep stage transitions and EEG amplitudes. Furthermore, urethane-induced SWS mimicked spontaneous sleep results obtained from CaV2.3 deficient mice. Quantitative Real-time PCR did not reveal changes in thalamic CaV3 T-type Ca(2+) channel expression. The detailed mechanisms of SWS increase in CaV2.3(-/-) mice remain to be determined. Low-voltage activated CaV2.3 R-type Ca(2+) channels in the thalamocortical loop and extra

  16. Imaging of current density distributions with a Nb weak-link scanning nano-SQUID microscope

    Science.gov (United States)

    Shibata, Yusuke; Nomura, Shintaro; Kashiwaya, Hiromi; Kashiwaya, Satoshi; Ishiguro, Ryosuke; Takayanagi, Hideaki

    2015-10-01

    Superconducting quantum interference devices (SQUIDs) are accepted as one of the highest magnetic field sensitive probes. There are increasing demands to image local magnetic fields to explore spin properties and current density distributions in a two-dimensional layer of semiconductors or superconductors. Nano-SQUIDs have recently attracting much interest for high spatial resolution measurements in nanometer-scale samples. Whereas weak-link Dayem Josephson junction nano-SQUIDs are suitable to miniaturization, hysteresis in current-voltage (I-V) characteristics that is often observed in Dayem Josephson junction is not desirable for a scanning microscope. Here we report on our development of a weak-link nano-SQUIDs scanning microscope with small hysteresis in I-V curve and on reconstructions of two-dimensional current density vector in two-dimensional electron gas from measured magnetic field.

  17. Exploring dark current voltage characteristics of micromorph silicon tandem cells with computer simulations

    NARCIS (Netherlands)

    Sturiale, A.; Li, H. B. T.; Rath, J.K.; Schropp, R.E.I.; Rubinelli, F.A.

    2009-01-01

    The transport mechanisms controlling the forward dark current-voltage characteristic of the silicon micromorph tandem solar cell were investigated with numerical modeling techniques. The dark current-voltage characteristics of the micromorph tandem structure at forward voltages show three regions:

  18. Optically transparent ZnO-based n-i-p ultraviolet photodetectors

    International Nuclear Information System (INIS)

    Wang, Kai; Vygranenko, Yuriy; Nathan, Arokia

    2007-01-01

    An optically transparent tin-doped indium oxide/ZnO/NiO n-i-p heterostructure photodiode was fabricated by ion beam assisted e-beam evaporation. The diode clearly demonstrates rectifying current-voltage (J-V) characteristics with a current rectification ratio up to 10 4 at bias ± 2 V and a low reverse current of ∼ 100 nA/cm 2 at - 5 V. Analysis of J-V characteristics including time dependence of the dark current shows that the leakage current at low biases is attributed to thermal generation via defect states, and at high biases, field-enhanced carrier generation from the ZnO layer dominates. Spectral response and linearity measurements indicate that such a diode is particularly suitable for low level of ultraviolet detection

  19. Voltage current characteristics of type III superconductors

    Science.gov (United States)

    Dorofejev, G. L.; Imenitov, A. B.; Klimenko, E. Yu.

    1980-06-01

    An adequate description of voltage-current characteristics is important in order to understand the nature of high critical current for the electrodynamic construction of type-III superconductors and for commercial superconductor specification. Homogenious monofilament and multifilament Nb-Ti, Nb-Zr, Nb 3Sn wires were investigated in different ranges of magnetic field, temperature and current. The longitudinal electric field for homogenious wires may be described by E=J ρnexp- T c/T 0+ T/T 0+ B/B 0+ J/J 0, where To, Bo, Jo are the increasing parameters, which depend weakly on B and T, of the electric field. The shape of the voltage-current characteristics of multifilament wires, and the parameter's dependence on temperature and magnetic field may be explained qualitatively by the longitudinal heterogeneous nature of the filaments. A method of attaining the complete specification of the wire's electro-physical properties is proposed. It includes the traditional description of a critical surface (ie the surface corresponding to a certain conventional effective resistivity in T, B, J - space) and a description of any increasing parameter that depends on B and T.

  20. Reproducible low-voltage resistive switching in a low-initial-resistance Pr0.7Ca0.3MnO3 junction

    International Nuclear Information System (INIS)

    Li Songlin; Gang Jianlei; Li Jie; Chu Haifeng; Zheng Dongning

    2008-01-01

    Current-voltage (I-V) characteristics are investigated in a low-initial-resistance Ag/Pr 0.7 Ca 0.3 MnO 3 /Pt sandwich structure. It is found that the junction can show stable low and high resistance states in ±0.3 V voltage sweeping cycles. The set and reset voltage values are, respectively, +0.1 V and -0.2 V, which are very low as compared with those reported previously. Furthermore, the I-V curves in both resistance states exhibit rather linear behaviour, without any signature of metal/insulator interface effects. This implies that the Schottky interface mechanism might not be an indispensable factor for the colossal electroresistance effect. The origin of low switching voltages is attributed to the reduced effective distance for electric field action due to the sufficient oxygen content of the PCMO layer. The underlying physics is discussed in terms of the filament network model together with the field-induced oxygen vacancy motion model

  1. Low Voltage CMOS Fully Differential Current Feedback Amplifier with Controllable 3-dB Bandwidth

    International Nuclear Information System (INIS)

    Madian, A.H.; Mahmoud, S.A.; Ashour, M.A.; Soliman, A.M.

    2008-01-01

    This paper presents a new CMOS fully differential current feedback operational amplifier with controllable 3-dB bandwidth suitable for analog data processing and acquisition applications. The FDCFOA has the advantage of a wide range controllable 3-dB bandwidth (∼57 MHz to 500 MHz) without changing the feedback resistance this guarantee the stability of the circuit. The FDCFOA has a standby current of 320μA. PSpice simulations of the FDCFOA block were given using 0.25μm CMOS technology from AMI MOSIS and dual supply voltages ±0.75 V

  2. Surge currents and voltages at the low voltage power mains during lightning strike to a GSM tower

    Energy Technology Data Exchange (ETDEWEB)

    Markowska, Renata [Bialystok Technical University (Poland)], E-mail: remark@pb.edu.pl

    2007-07-01

    The paper presents the results of numerical calculations of lightning surge currents and voltages in the low voltage power mains system connected to a free standing GSM base station. Direct lightning strike to GSM tower was studied. The analysis concerned the current that flows to the transformer station through AC power mains, the potential difference between the grounding systems of the GSM and the transformer stations and the voltage differences between phase and PE conductors of the power mains underground cable at both the GSM and the transformer sides. The calculations were performed using a numerical program based on the electromagnetic field theory and the method of moments. (author)

  3. Josephson tunneling current in the presence of a time-dependent voltage

    International Nuclear Information System (INIS)

    Harris, R.E.

    1975-01-01

    The expression for the current through a small Josephson tunnel junction in the presence of a time-dependent voltage is presented. Four terms appear: the usual sine, cosine, and quasiparticle terms, and a reactive part of the quasiparticle current. The latter is displayed graphically as a function of both energy and temperature. It is shown that in the limit of zero dc voltage and small ac voltage, the Josephson device behaves linearly. Interpretation of the in- and out-of-phase components of the current in this linear limit is given to provide physical insight into some of the details of the general expression. Finally, the tunneling current in the linear limit is shown for thin tunneling barriers to be proportional to the current in a single superconductor in the presence of an electromagnetic field

  4. Flexible Compensation of Voltage and Current Unbalance and Harmonics in Microgrids

    DEFF Research Database (Denmark)

    Mousazadeh, Seyyed Yousef; Jalilian, Alireza; Savaghebi, Mehdi

    2017-01-01

    In recent years, the harmonics and unbalance problem endanger the voltage and current quality of power systems due to increasing usage of nonlinear and unbalance loads. Using DG interfacing inverters is proposed for voltage or current compensation. In this paper, a flexible control method...... is proposed to compensate voltage and current unbalance and harmonics using the Distributed Generation (DG) interfacing inverters. This method is applicable to both grid-connected and islanded microgrids. In the proposed method, not only the proper control of active and reactive powers can be achieved......) frame. An extensive simulation study has been performed and the results demonstrate the effectiveness of the proposed control scheme. The results show that depending on the compensation mode, the harmonics and unbalance compensation of DGs’ output current, MG’s injected current to the grid as well...

  5. Analysis of the current–voltage curves and saturation currents in burner-stabilised premixed flames with detailed ion chemistry and transport models

    KAUST Repository

    Belhi, Memdouh; Han, Jie; Casey, Tiernan A.; Chen, Jyh-Yuan; Im, Hong G.; Sarathy, S.  Mani; Bisetti, Fabrizio

    2018-01-01

    Current-voltage, or i–V, curves are used in combustion to characterise the ionic structure of flames. The objective of this paper is to develop a detailed modelling framework for the quantitative prediction of the i–V curves in methane/air flames

  6. Onset of chaos and dc current-voltage characteristics of rf-driven Josephson junctions in the low-frequency regime

    International Nuclear Information System (INIS)

    Chi, C.C.; Vanneste, C.

    1990-01-01

    A comprehensive picture of the dc current-voltage (I-V) characteristics of rf-driven Josephson junctions in the low-frequency regime is presented. The boundary of the low-frequency regime is roughly defined by the junction characteristic frequency for overdamped junctions, and by the inverse of the junction damping time for underdamped junctions. An adiabatic model valid for the low-frequency regime is used to describe the overall shapes of the I-V curves, which is in good agreement with both the numerical simulations and the experimental results. For underdamped junctions, the Shapiro steps are the prominent features on the I-V curves if the rf frequency is sufficiently below the boundary. As the rf frequency is increased towards the boundary, large negatively-going tails on top of the Shapiro steps are observed both experimentally and numerically. Numerical simulations using the resistively- and capacitively-shunted-junction model (RCSJ model) reveal that the negatively-going tail is a signature of the low-frequency boundary of the junction chaotic regime. With use of the adiabatic model and the existence of plasma oscillations for underdamped junctions, the onset of chaos and its effect on the Shapiro steps can be fully explained. The high-frequency limit of the adiabatic model and the chaotic behavior of the Josephson junctions beyond the low-frequency regime are also briefly discussed

  7. Fiber-optic voltage measuring system

    Science.gov (United States)

    Ye, Miaoyuan; Nie, De-Xin; Li, Yan; Peng, Yu; Lin, Qi-Qing; Wang, Jing-Gang

    1993-09-01

    A new fibre optic voltage measuring system has been developed based on the electrooptic effect of bismuth germanium oxide (Bi4Ge3O12)crystal. It uses the LED as the light source. The light beam emitted from the light source is transmitted to the sensor through the optic fibre and the intensity of the output beam is changed by the applied voltage. This optic signal is transmitted to the PIN detector and converted to an electric signal which is processed by the electronic circuit and 8098 single chip microcomputer the output voltage signal obtained is directly proportional to the applied voltage. This paper describes the principle the configuration and the performance parameters of the system. Test results are evaluated and discussed.

  8. Effect of quantum noise and tunneling on the fluctuational voltage-current characteristics and the lifetime of the zero-voltage state in Josephson junctions

    International Nuclear Information System (INIS)

    Mel'nikov, V.I.; Suetoe, A.

    1986-01-01

    The minima of the potential energy for the dynamical variable phi of a Josephson junction are separated by barriers of height hI/sub c//e, where I/sub c/ is the critical current. At low temperatures, T hΩ/2π (Ω is the Josephson plasma frequency). We consider this problem for high-quality junctions (RCΩ>>1, R and C are the resistance and the capacitance of the junction), accounting for the effect of a Johnson-Nyquist noise and quantum tunneling at the barrier top. With a simplifying assumption, we derive a pair of integral equations containing an energy variable for the steady-state distribution of phi and phi-dot, and solve it by a modification of the Wiener-Hopf method. The result is a formula for the current dependence of the fluctuational voltage, valid for currents I 2 <<1

  9. Microscopic origin of gating current fluctuations in a potassium channel voltage sensor.

    Science.gov (United States)

    Freites, J Alfredo; Schow, Eric V; White, Stephen H; Tobias, Douglas J

    2012-06-06

    Voltage-dependent ion channels open and close in response to changes in membrane electrical potential due to the motion of their voltage-sensing domains (VSDs). VSD charge displacements within the membrane electric field are observed in electrophysiology experiments as gating currents preceding ionic conduction. The elementary charge motions that give rise to the gating current cannot be observed directly, but appear as discrete current pulses that generate fluctuations in gating current measurements. Here we report direct observation of gating-charge displacements in an atomistic molecular dynamics simulation of the isolated VSD from the KvAP channel in a hydrated lipid bilayer on the timescale (10-μs) expected for elementary gating charge transitions. The results reveal that gating-charge displacements are associated with the water-catalyzed rearrangement of salt bridges between the S4 arginines and a set of conserved acidic side chains on the S1-S3 transmembrane segments in the hydrated interior of the VSD. Copyright © 2012 Biophysical Society. Published by Elsevier Inc. All rights reserved.

  10. C-V and G-V characteristics of ion-implanted MOS structures depending upon the geometrical structure of the implanted region

    International Nuclear Information System (INIS)

    Zohta, Y.

    1977-01-01

    It is found that the capacitance-voltage (C-V) and conductance-voltage (G-V) characteristics of MOS capacitors, into which ions of the opposite conductivity type are implanted, depend strongly upon the geometrical structure of the ion-implanted region. This phenomenon can be analyzed in terms of lateral current flow which connects an inversion layer formed in the ion-implanted region to a surrounding nonimplanted substrate. On the basis of this model, the C-V and G-V characteristics are calculated using a simple equivalent circuit, and general relationships inherent in this model are obtained. MOS capacitors with an ion-implanted layer of different geometries have been prepared to measure their C-V and G-V characteristics. Comparison of experimental measurements with theory substantiates the lateral current flow model

  11. Current-voltage characteristics of carbon nanostructured field emitters in different power supply modes

    Science.gov (United States)

    Popov, E. O.; Kolosko, A. G.; Filippov, S. V.; Romanov, P. A.; Terukov, E. I.; Shchegolkov, A. V.; Tkachev, A. G.

    2017-12-01

    We received and compared the current-voltage characteristics of large-area field emitters based on nanocomposites with graphene and nanotubes. The characteristics were measured in two high voltage scanning modes: the "slow" and the "fast". Correlation between two types of hysteresis observed in these regimes was determined. Conditions for transition from "reverse" hysteresis to the "direct" one were experimentally defined. Analysis of the eight-shaped hysteresis was provided with calculation of the effective emission parameters. The phenomenological model of adsorption-desorption processes in the field emission system was proposed.

  12. Computer controlled high voltage system

    Energy Technology Data Exchange (ETDEWEB)

    Kunov, B; Georgiev, G; Dimitrov, L [and others

    1996-12-31

    A multichannel computer controlled high-voltage power supply system is developed. The basic technical parameters of the system are: output voltage -100-3000 V, output current - 0-3 mA, maximum number of channels in one crate - 78. 3 refs.

  13. The monitoring results of electromagnetic radiation of 110-kV high-voltage lines in one urban location in Chongqing P.R. China.

    Science.gov (United States)

    Qin, Qi-Zhong; Chen, Yu; Fu, Ting-Ting; Ding, Li; Han, Ling-Li; Li, Jian-Chao

    2012-03-01

    To understand electromagnetic radiation field strength and its influencing factors of certain 110-kV high-voltage lines in one urban area of Chongqing by measuring 110-kV high-voltage line's electromagnetic radiation level. According to the methodology as determined by the National Hygienic Standards, we selected certain adjacent residential buildings, high-voltage lines along a specific street and selected different distances around its vertical projection point as monitoring points. The levels of electromagnetic radiations were measured respectively. In this investigation within the frequency of 5-1,000 Hz both the electric field strength and magnetic field strength of each monitoring sites were lower than the public exposure standards as determined by the International Commission on Non-Ionizing Radiation Protection. However, the electrical field strength on the roof adjacent to the high-voltage lines was significantly higher than that as measured on the other floors in the same buildings (p electromagnetic radiation measurements of different monitoring points, under the same high-voltage lines, showed the location which is nearer the high-voltage line maintain a consistently higher level of radiation than the more distant locations (p Electromagnetic radiation generated by high-voltage lines decreases proportionally to the distance from the lines. The buildings can to some extent shield (or absorb) the electric fields generated by high-voltage lines nearby. The electromagnetic radiation intensity near high-voltage lines may be mitigated or intensified by the manner in which the high-voltage lines are set up, and it merits attention for the potential impact on human health.

  14. Design of shielded voltage divider for impulse voltage measurement

    International Nuclear Information System (INIS)

    Kato, Shohei; Kouno, Teruya; Maruyama, Yoshio; Kikuchi, Koji.

    1976-01-01

    The dividers used for the study of the insulation and electric discharge phenomena in high voltage equipments have the problems of the change of response characteristics owing to adjacent bodies and of induced noise. To improve the characteristics, the enclosed type divider shielded with metal has been investigated, and the divider of excellent response has been obtained by adopting the frequency-separating divider system, which is divided into two parts, resistance divider (lower frequency region) and capacitance divider (higher frequency region), for avoiding to degrade the response. Theoretical analysis was carried out in the cases that residual inductance can be neglected or can not be neglected in the small capacitance divider, and that the connecting wires are added. Next, the structure of the divider and the design of the electric field for the divider manufactured on the basis of the theory are described. The response characteristics were measured. The results show that 1 MV impulse voltage can be measured within the response time of 10 ns. Though this divider aims at the impulse voltage, the duration time of which is about that of standard lightning impulse, in view of the heat capacity because of the input resistance of 10.5 kΩ, it is expected that the divider can be applied to the voltage of longer duration time by increasing the input resistance in future. (Wakatsuki, Y.)

  15. The Role of Interface States and Series Resistance on the Current Voltage (I-V) Characterises of Au/n-CdTe Solar Cells

    International Nuclear Information System (INIS)

    Fiat, S.

    2008-01-01

    In order to well interpret the experimentally observed nonideal Au/n-CdTe solar cells parameters such as the zero-bias barrier height ( Φ B o), ideality factor (n), interface states (Nss) and series resistance. The energy distribution profile of Nss was obtained from forward bias I-V characteristics by taking in to account the bias dependent of the effective barrier height (Φ e )at room temperature.The values of Rs obtained from Cheung's functions. The higher values of n and Rs were attributed to the existence of a native insulator layer on CdTe surface and to high density of Nss localized at semiconductor/ insulator layer interface. The experimental I-V characteristics confirmed that the the thickness of insulator layer (δ o x) ,magnitude or Rs and Nss and a particular distribution of Nss in the band gap are important parameters that influence the electrical parameters of Au/n-CdTe solar cells

  16. Harmonic and reactive behavior of the quasiparticle tunnel current in SIS junctions

    Energy Technology Data Exchange (ETDEWEB)

    Rashid, H., E-mail: hawal@chalmers.se; Desmaris, V.; Pavolotsky, A.; Belitsky, V. [Group for Advanced Receiver Development, Earth and Space Sciences Department, Chalmers University of Technology, Gothenburg, 412 96 (Sweden)

    2016-04-15

    In this paper, we show theoretically and experimentally that the reactive quasiparticle tunnel current of the superconductor tunnel junction could be directly measured at specific bias voltages for the higher harmonics of the quasiparticle tunnel current. We used the theory of quasiparticle tunneling to study the higher harmonics of the quasiparticle tunnel current in superconducting tunnel junction in the presence of rf irradiation. The impact of the reactive current on the harmonic behavior of the quasiparticle tunnel current was carefully studied by implementing a practical model with four parameters to model the dc I-V characteristics of the superconducting tunnel junction. The measured reactive current at the specific bias voltage is in good agreement with our theoretically calculated reactive current through the Kramers-Kronig transform. This study also shows that there is an excellent correspondence between the behavior of the predicted higher harmonics using the previously established theory of quasiparticle tunnel current in superconducting tunnel junctions by J.R. Tucker and M.J. Feldman and the measurements presented in this paper.

  17. Harmonic and reactive behavior of the quasiparticle tunnel current in SIS junctions

    International Nuclear Information System (INIS)

    Rashid, H.; Desmaris, V.; Pavolotsky, A.; Belitsky, V.

    2016-01-01

    In this paper, we show theoretically and experimentally that the reactive quasiparticle tunnel current of the superconductor tunnel junction could be directly measured at specific bias voltages for the higher harmonics of the quasiparticle tunnel current. We used the theory of quasiparticle tunneling to study the higher harmonics of the quasiparticle tunnel current in superconducting tunnel junction in the presence of rf irradiation. The impact of the reactive current on the harmonic behavior of the quasiparticle tunnel current was carefully studied by implementing a practical model with four parameters to model the dc I-V characteristics of the superconducting tunnel junction. The measured reactive current at the specific bias voltage is in good agreement with our theoretically calculated reactive current through the Kramers-Kronig transform. This study also shows that there is an excellent correspondence between the behavior of the predicted higher harmonics using the previously established theory of quasiparticle tunnel current in superconducting tunnel junctions by J.R. Tucker and M.J. Feldman and the measurements presented in this paper.

  18. Current and Voltage Mode Multiphase Sinusoidal Oscillators Using CBTAs

    Directory of Open Access Journals (Sweden)

    M. Sagbas

    2013-04-01

    Full Text Available Current-mode (CM and voltage-mode (VM multiphase sinusoidal oscillator (MSO structures using current backward transconductance amplifier (CBTA are proposed. The proposed oscillators can generate n current or voltage signals (n being even or odd equally spaced in phase. n+1 CBTAs, n grounded capacitors and a grounded resistor are used for nth-state oscillator. The oscillation frequency can be independently controlled through transconductance (gm of the CBTAs which are adjustable via their bias currents. The effects caused by the non-ideality of the CBTA on the oscillation frequency and condition have been analyzed. The performance of the proposed circuits is demonstrated on third-stage and fifth-stage MSOs by using PSPICE simulations based on the 0.25 µm TSMC level-7 CMOS technology parameters.

  19. Magnetic field induced suppression of the forward bias current in Bi2Se3/Si Schottky barrier diodes

    Science.gov (United States)

    Jin, Haoming; Hebard, Arthur

    Schottky diodes formed by van der Waals bonding between freshly cleaved flakes of the topological insulator Bi2Se3 and doped silicon substrates show electrical characteristics in good agreement with thermionic emission theory. The motivation is to use magnetic fields to modulate the conductance of the topologically protected conducting surface state. This surface state in close proximity to the semiconductor surface may play an important role in determining the nature of the Schottky barrier. Current-voltage (I-V) and capacitance-voltage (C-V) characteristics were obtained for temperatures in the range 50-300 K and magnetic fields, both perpendicular and parallel to the interface, as high as 7 T. The I-V curve shows more than 6 decades linearity on semi-logarithmic plots, allowing extraction of parameters such as ideality (η), zero-voltage Schottky barrier height (SBH), and series resistance (Rs). In forward bias we observe a field-induced decrease in current which becomes increasingly more pronounced at higher voltages and lower temperature, and is found to be correlated with changes in Rs rather than other barrier parameters. A comparison of changes in Rs in both field direction will be made with magnetoresistance in Bi2Se3 transport measurement. The work is supported by NSF through DMR 1305783.

  20. A 320 mV, 6 kb subthreshold 10T SRAM employing voltage lowering techniques

    International Nuclear Information System (INIS)

    Cai Jiangzheng; Zhang Sumin; Yuan Jia; Shang Xinchao; Chen Liming; Hei Yong

    2015-01-01

    This paper presents a 6 kb SRAM that uses a novel 10T cell to achieve a minimum operating voltage of 320 mV in a 130 nm CMOS process. A number of low power circuit techniques are included to enable the proposed SRAM to operate in the subthreshold region. The reverse short channel effect and the reverse narrow channel effect are utilized to improve the performance of the SRAM. A novel subthreshold pulse generation circuit produces an ideal pulse to make read operation stable. A floating write bit-line effectively reduces the standby leakage consumption. Finally, a short read bit-line makes the read operation fast and energy-saving. Measurements indicate that these techniques are effective, the SRAM can operate at 800 kHz and consume 1.94 μW at its lowest voltage (320 mV). (paper)

  1. Development of an intelligent high-voltage direct-current power supply for nuclear detectors

    International Nuclear Information System (INIS)

    Zhao Xiuliang

    1997-01-01

    The operation and performances of a new type direct-current high-voltage power supply are described. The power supply with intelligent feature is controlled by a single-chip microcomputer (8031), and various kinds of output voltage can be preset. The output-voltage is monitored and regulated by the single-chip microcomputer and displayed by LED. The output voltage is stable when the load current is within the allowable limits

  2. Improving transition voltage spectroscopy of molecular junctions

    DEFF Research Database (Denmark)

    Markussen, Troels; Chen, Jingzhe; Thygesen, Kristian Sommer

    2011-01-01

    Transition voltage spectroscopy (TVS) is a promising spectroscopic tool for molecular junctions. The principles in TVS is to find the minimum on a Fowler-Nordheim plot where ln(I/V2) is plotted against 1/V and relate the voltage at the minimum Vmin to the closest molecular level. Importantly, Vmin...

  3. Conventional P-ω/Q-V Droop Control in Highly Resistive Line of Low-Voltage Converter-Based AC Microgrid

    DEFF Research Database (Denmark)

    Hou, Xiaochao; Sun, Yao; Yuan, Wenbin

    2016-01-01

    -ω/Q-V droop control is adopted in the low-voltage AC microgrid. As a result, the active power sharing among the distributed generators (DGs) is easily obtained without communication. More importantly, this study clears up the previous misunderstanding that conventional P-ω/Q-V droop control is only applicable...... to microgrids with highly inductive lines, and lays a foundation for the application of conventional droop control under different line impedances. Moreover, in order to guarantee the accurate reactive power sharing, a guide for designing Q-V droop gains is given, and virtual resistance is adopted to shape......In low-voltage converter-based alternating current (AC) microgrids with resistive distribution lines, the P-V droop with Q-f boost (VPD/FQB) is the most common method for load sharing. However, it cannot achieve the active power sharing proportionally. To overcome this drawback, the conventional P...

  4. High current, 0.5-MA, fast, 100-ns, linear transformer driver experiments

    Directory of Open Access Journals (Sweden)

    Michael G. Mazarakis

    2009-05-01

    Full Text Available The linear transformer driver (LTD is a new method for constructing high current, high-voltage pulsed accelerators. The salient feature of the approach is switching and inductively adding the pulses at low voltage straight out of the capacitors through low inductance transfer and soft iron core isolation. Sandia National Laboratories are actively pursuing the development of a new class of accelerator based on the LTD technology. Presently, the high current LTD experimental research is concentrated on two aspects: first, to study the repetition rate capabilities, reliability, reproducibility of the output pulses, switch prefires, jitter, electrical power and energy efficiency, and lifetime measurements of the cavity active components; second, to study how a multicavity linear array performs in a voltage adder configuration relative to current transmission, energy and power addition, and wall plug to output pulse electrical efficiency. Here we report the repetition rate and lifetime studies performed in the Sandia High Current LTD Laboratory. We first utilized the prototype ∼0.4-MA, LTD I cavity which could be reliably operated up to ±90-kV capacitor charging. Later we obtained an improved 0.5-MA, LTD II version that can be operated at ±100  kV maximum charging voltage. The experimental results presented here were obtained with both cavities and pertain to evaluating the maximum achievable repetition rate and LTD cavity performance. The voltage adder experiments with a series of double sized cavities (1 MA, ±100  kV will be reported in future publications.

  5. A dulal-functional medium voltage level DVR to limit downstream fault currents

    DEFF Research Database (Denmark)

    Blaabjerg, Frede; Li, Yun Wei; Vilathgamuwa, D. Mahinda

    2007-01-01

    on the other parallel feeders connected to PCC. Furthermore, if not controlled properly, the DVR might also contribute to this PCC voltage sag in the process of compensating the missing voltage, thus further worsening the fault situation. To limit the flow of large line currents, and therefore restore the PCC...... situations. Controlling the DVR as a virtual inductor would also ensure zero real power absorption during the DVR compensation and thus minimize the stress in the dc link. Finally, the proposed fault current limiting algorithm has been tested in Matlab/Simulink simulation and experimentally on a medium......The dynamic voltage restorer (DVR) is a modern custom power device used in power distribution networks to protect consumers from sudden sags (and swells) in grid voltage. Implemented at medium voltage level, the DVR can be used to protect a group of medium voltage or low voltage consumers. However...

  6. A HIGH CURRENT, HIGH VOLTAGE SOLID-STATE PULSE GENERATOR FOR THE NIF PLASMA ELECTRODE POCKELS CELL

    International Nuclear Information System (INIS)

    Arnold, P A; Barbosa, F; Cook, E G; Hickman, B C; Akana, G L; Brooksby, C A

    2007-01-01

    A high current, high voltage, all solid-state pulse modulator has been developed for use in the Plasma Electrode Pockels Cell (PEPC) subsystem in the National Ignition Facility. The MOSFET-switched pulse generator, designed to be a more capable plug-in replacement for the thyratron-switched units currently deployed in NIF, offers unprecedented capabilities including burst-mode operation, pulse width agility and a steady-state pulse repetition frequency exceeding 1 Hz. Capable of delivering requisite fast risetime, 17 kV flattop pulses into a 6 (Omega) load, the pulser employs a modular architecture characteristic of the inductive adder technology, pioneered at LLNL for use in acceleration applications, which keeps primary voltages low (and well within the capabilities of existing FET technology), reduces fabrication costs and is amenable to rapid assembly and quick field repairs

  7. Elevated voltage level I.sub.DDQ failure testing of integrated circuits

    Science.gov (United States)

    Righter, Alan W.

    1996-01-01

    Burn in testing of static CMOS IC's is eliminated by I.sub.DDQ testing at elevated voltage levels. These voltage levels are at least 25% higher than the normal operating voltage for the IC but are below voltage levels that would cause damage to the chip.

  8. Analysis of bias voltage dependent spectral response in Ga{sub 0.51}In{sub 0.49}P/Ga{sub 0.99}In{sub 0.01}As/Ge triple junction solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Sogabe, Tomah, E-mail: Sogabe@mbe.rcast.u-tokyo.ac.jp; Ogura, Akio; Okada, Yoshitaka [Research Center for Advanced Science and Technology (RCAST), The University of Tokyo 4-6-1 Komaba, Meguro-ku, Tokyo 153-8504 (Japan)

    2014-02-21

    Spectral response measurement plays great role in characterizing solar cell device because it directly reflects the efficiency by which the device converts the sunlight into an electrical current. Based on the spectral response results, the short circuit current of each subcell can be quantitatively determined. Although spectral response dependence on wavelength, i.e., the well-known external quantum efficiency (EQE), has been widely used in characterizing multijunction solar cell and has been well interpreted, detailed analysis of spectral response dependence on bias voltage (SR −V{sub bias}) has not been reported so far. In this work, we have performed experimental and numerical studies on the SR −V{sub bias} for Ga{sub 0.51}In{sub 0.49}P/Ga{sub 0.99}In{sub 0.01}As/Ge triple junction solar cell. Phenomenological description was given to clarify the mechanism of operation matching point variation in SR −V{sub bias} measurements. The profile of SR−V{sub bias} curve was explained in detail by solving the coupled two-diode current-voltage characteristic transcend formula for each subcell.

  9. Measurements of crowbar performance of the 20 kV 130 A dc power supply of the TRIUMF RF system

    International Nuclear Information System (INIS)

    Mitra, A.K.

    1991-05-01

    The TRIUMF RF system operates at a fixed frequency of 23.06 MHz with a power capability of 1800 kW. The dc plate power for the four push-pull power amplifiers is provided by a single dc power supply at 20 kV, 130 A and the amplifiers are protected by a single ignitron crowbar circuit. In the case of voltage breakdown outside the tube, the triggering of the crowbar circuit relies on the voltage developed across a low resistance shunt in the return path of the common dc power supply. Frequent failure of the crowbar ignitrons following an external dc voltage breakdown led to the investigation of the crowbar performance. Current transformers have been installed in the common B + line to the power amplifiers and the anode circuit of the ignitron crowbar in order to measure amplitude, duration and time delay of various dc currents under fault conditions. Similar current transformers were installed in the individual anode circuits of the power amplifiers to provide protection to the complete system in case of an external dc voltage breakdown. The results of these measurements and recommended solutions for operations are reported. (Author) 3 refs., 4 figs

  10. A Decentralized Current-Sharing Controller Endows Fast Transient Response to Parallel DC-DC Converters

    DEFF Research Database (Denmark)

    Wang, Haojie; Han, Minxiao; Han, Renke

    2018-01-01

    This paper proposes a decentralized current-sharing control strategy to endow fast transient response to paralleled DC-DC converters systems, such as DC microgrids or distributed power systems. The proposed controller consist of two main control loops: an external voltage droop control for current......-sharing proposes and an internal current loop. The external droop control loop is designed as a voltage loop with embedded virtual impedance, which avoids the use of a slow voltage loop and a separate extra virtual impedance loop that may limit the system bandwidth. The internal current loop, thanks...... and the proposed embedded-virtual-impedance based I-V droop. In order to compare the dynamic response performances between two droop controllers, their state-space models have been developed and analyzed in this paper. The results show that the dynamic response of the I-V droop control is faster than...

  11. Quantitative analysis of charge trapping and classification of sub-gap states in MoS2 TFT by pulse I-V method

    Science.gov (United States)

    Park, Junghak; Hur, Ji-Hyun; Jeon, Sanghun

    2018-04-01

    The threshold voltage instabilities and huge hysteresis of MoS2 thin film transistors (TFTs) have raised concerns about their practical applicability in next-generation switching devices. These behaviors are associated with charge trapping, which stems from tunneling to the adjacent trap site, interfacial redox reaction and interface and/or bulk trap states. In this report, we present quantitative analysis on the electron charge trapping mechanism of MoS2 TFT by fast pulse I-V method and the space charge limited current (SCLC) measurement. By adopting the fast pulse I-V method, we were able to obtain effective mobility. In addition, the origin of the trap states was identified by disassembling the sub-gap states into interface trap and bulk trap states by simple extraction analysis. These measurement methods and analyses enable not only quantitative extraction of various traps but also an understanding of the charge transport mechanism in MoS2 TFTs. The fast I-V data and SCLC data obtained under various measurement temperatures and ambient show that electron transport to neighboring trap sites by tunneling is the main charge trapping mechanism in thin-MoS2 TFTs. This implies that interfacial traps account for most of the total sub-gap states while the bulk trap contribution is negligible, at approximately 0.40% and 0.26% in air and vacuum ambient, respectively. Thus, control of the interface trap states is crucial to further improve the performance of devices with thin channels.

  12. Voltage-pulse generator for electron gun

    International Nuclear Information System (INIS)

    Korenev, S.A.; Enchevich, I.B.; Mikhov, M.K.

    1987-01-01

    A voltage-pulse generator with combined capacitive and inductive storage devices of an electron gun is described. The current interrupter is a hydrogen thyratron (TGI1-100/8, TGI1-500/16, or TGI1-1000/25) installed in a short magnetic lens. The current interruption time of the thyratrons is 100-300 nsec. When the capacitive storage device is charged to 1 kV, a voltage pulse with an amplitude of 25 kV is obtained at the load

  13. Cathode fall model and current-voltage characteristics of field emission driven direct current microplasmas

    Energy Technology Data Exchange (ETDEWEB)

    Venkattraman, Ayyaswamy [Department of Applied Mechanics, Indian Institute of Technology Madras, Chennai 600036 (India)

    2013-11-15

    The post-breakdown characteristics of field emission driven microplasma are studied theoretically and numerically. A cathode fall model assuming a linearly varying electric field is used to obtain equations governing the operation of steady state field emission driven microplasmas. The results obtained from the model by solving these equations are compared with particle-in-cell with Monte Carlo collisions simulation results for parameters including the plasma potential, cathode fall thickness, ion number density in the cathode fall, and current density vs voltage curves. The model shows good overall agreement with the simulations but results in slightly overpredicted values for the plasma potential and the cathode fall thickness attributed to the assumed electric field profile. The current density vs voltage curves obtained show an arc region characterized by negative slope as well as an abnormal glow discharge characterized by a positive slope in gaps as small as 10 μm operating at atmospheric pressure. The model also retrieves the traditional macroscale current vs voltage theory in the absence of field emission.

  14. Cathode fall model and current-voltage characteristics of field emission driven direct current microplasmas

    International Nuclear Information System (INIS)

    Venkattraman, Ayyaswamy

    2013-01-01

    The post-breakdown characteristics of field emission driven microplasma are studied theoretically and numerically. A cathode fall model assuming a linearly varying electric field is used to obtain equations governing the operation of steady state field emission driven microplasmas. The results obtained from the model by solving these equations are compared with particle-in-cell with Monte Carlo collisions simulation results for parameters including the plasma potential, cathode fall thickness, ion number density in the cathode fall, and current density vs voltage curves. The model shows good overall agreement with the simulations but results in slightly overpredicted values for the plasma potential and the cathode fall thickness attributed to the assumed electric field profile. The current density vs voltage curves obtained show an arc region characterized by negative slope as well as an abnormal glow discharge characterized by a positive slope in gaps as small as 10 μm operating at atmospheric pressure. The model also retrieves the traditional macroscale current vs voltage theory in the absence of field emission

  15. Elevated voltage level I{sub DDQ} failure testing of integrated circuits

    Science.gov (United States)

    Righter, A.W.

    1996-05-21

    Burn in testing of static CMOS IC`s is eliminated by I{sub DDQ} testing at elevated voltage levels. These voltage levels are at least 25% higher than the normal operating voltage for the IC but are below voltage levels that would cause damage to the chip. 4 figs.

  16. Poisson simulation for high voltage terminal of test stand for 1MV electrostatic accelerator

    Energy Technology Data Exchange (ETDEWEB)

    Park, Sae-Hoon; Kim, Jeong-Tae; Kwon, Hyeok-Jung; Cho, Yong-Sub [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of); Kim, Yu-Seok [Dongguk Univ.., Gyeongju (Korea, Republic of)

    2014-10-15

    KOMAC provide ion beam to user which energy range need to expand to MeV range and develop 1 MV electrostatic accelerator. The specifications of the electrostatic accelerator are 1MV acceleration voltage, 10 mA peak current and variable gas ion. We are developing test stand before set up 1 MV electrostatic accelerator. The test stand voltage is 300 kV and operating time is 8 hours. The test stand is consist of 300 kV high voltage terminal, DC-AC-DC inverter, power supply device inside terminal, 200MHz RF power, 5 kV extraction power supply, 300 kV accelerating tube and vacuum system.. The beam measurement system and beam dump will be installed next to accelerating tube. Poisson code simulation results of the high voltage terminal are presented in this paper. Poisson code has been used to calculate the electric field for high voltage terminal. The results of simulation were verified with reasonable results. The poisson code structure could be apply to the high voltage terminal of the test stand.

  17. Poisson simulation for high voltage terminal of test stand for 1MV electrostatic accelerator

    International Nuclear Information System (INIS)

    Park, Sae-Hoon; Kim, Jeong-Tae; Kwon, Hyeok-Jung; Cho, Yong-Sub; Kim, Yu-Seok

    2014-01-01

    KOMAC provide ion beam to user which energy range need to expand to MeV range and develop 1 MV electrostatic accelerator. The specifications of the electrostatic accelerator are 1MV acceleration voltage, 10 mA peak current and variable gas ion. We are developing test stand before set up 1 MV electrostatic accelerator. The test stand voltage is 300 kV and operating time is 8 hours. The test stand is consist of 300 kV high voltage terminal, DC-AC-DC inverter, power supply device inside terminal, 200MHz RF power, 5 kV extraction power supply, 300 kV accelerating tube and vacuum system.. The beam measurement system and beam dump will be installed next to accelerating tube. Poisson code simulation results of the high voltage terminal are presented in this paper. Poisson code has been used to calculate the electric field for high voltage terminal. The results of simulation were verified with reasonable results. The poisson code structure could be apply to the high voltage terminal of the test stand

  18. Evaluation of the drain—source voltage effect on AlGaAs/InGaAs PHEMTs thermal resistance by the structure function method

    International Nuclear Information System (INIS)

    Ma Lin; Feng Shiwei; Zhang Yamin; Deng Bing; Yue Yuan

    2014-01-01

    The effect of drain—source voltage on AlGaAs/InGaAs PHEMTs thermal resistance is studied by experimental measuring and simulation. The result shows that AlGaAs/InGaAs PHEMTs thermal resistance presents a downward trend under the same power dissipation when the drain—source voltage (V DS ) is decreased. Moreover, the relatively low V DS and large drain—source current (I DS ) result in a lower thermal resistance. The chip-level and package-level thermal resistance have been extracted by the structure function method. The simulation result indicated that the high electric field occurs at the gate contact where the temperature rise occurs. A relatively low V DS leads to a relatively low electric field, which leads to the decline of the thermal resistance. (semiconductor devices)

  19. Zero current measurements using the Rogowski coil

    International Nuclear Information System (INIS)

    Gregor, J.; Jakubova, I.; Kadlec, P.; Senk, J.; Vavra, Z.

    1997-01-01

    The zero current measurements using the Rogowski coil carried out on the model of the extinguishing chamber of hv SF 6 circuit breaker with self-flow generation are presented in the paper. The time course of the post-arc current obtained by numerical integration of the measured induced voltage of the Rogowski coil gives information not only about the value of the residual current after the successful interruption but also about the current changes connected with the dynamic behaviour of the arc during its quenching. (author)

  20. Voltage Dependence of Supercapacitor Capacitance

    Directory of Open Access Journals (Sweden)

    Szewczyk Arkadiusz

    2016-09-01

    Full Text Available Electronic Double-Layer Capacitors (EDLC, called Supercapacitors (SC, are electronic devices that are capable to store a relatively high amount of energy in a small volume comparing to other types of capacitors. They are composed of an activated carbon layer and electrolyte solution. The charge is stored on electrodes, forming the Helmholtz layer, and in electrolyte. The capacitance of supercapacitor is voltage- dependent. We propose an experimental method, based on monitoring of charging and discharging a supercapacitor, which enables to evaluate the charge in an SC structure as well as the Capacitance-Voltage (C-V dependence. The measurement setup, method and experimental results of charging/discharging commercially available supercapacitors in various voltage and current conditions are presented. The total charge stored in an SC structure is proportional to the square of voltage at SC electrodes while the charge on electrodes increases linearly with the voltage on SC electrodes. The Helmholtz capacitance increases linearly with the voltage bias while a sublinear increase of total capacitance was found. The voltage on SC increases after the discharge of electrodes due to diffusion of charges from the electrolyte to the electrodes. We have found that the recovery voltage value is linearly proportional to the initial bias voltage value.

  1. The current–voltage and capacitance–voltage characteristics at high temperatures of Au Schottky contact to n-type GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Özerli, Halil; Karteri, İbrahim [Department of Materials Science And Engineering, Kahramanmaraş Sütçü İmam University, 46100 Kahramanmaraş (Turkey); Karataş, Şükrü, E-mail: skaratas@ksu.edu.tr [Department of Materials Science And Engineering, Kahramanmaraş Sütçü İmam University, 46100 Kahramanmaraş (Turkey); Department of Physics, Kahramanmaraş Sütçü İmam University, 46100 Kahramanmaraş (Turkey); Altindal, Şemsettin [Department of Physics, Gazi University, 06100 Ankara (Turkey)

    2014-05-01

    Highlights: • The electronic parameters of the diode under temperature were investigated. • The barrier heights have a Gaussian distribution. • Au/n-GaAs diode exhibits a rectification behavior. - Abstract: We have investigated the temperature-dependent current–voltage (I–V) and capacitance–voltage (C–V) characteristics of Au/n-GaAs Schottky barrier diodes (SBDs) in the temperature range of 280–415 K. The barrier height for the Au/n-type GaAs SBDs from the I–V and C–V characteristics have varied from 0.901 eV to 0.963 eV (I–V) and 1.234 eV to 0.967 eV (C–V), and the ideality factor (n) from 1.45 to 1.69 in the temperature range 280–415 K. The conventional Richardson plots are found to be linear in the temperature range measured. Both the ln(I{sub 0}/T{sup 2}) versus (kT){sup −1} and ln(I{sub 0}/T{sup 2}) versus (nkT){sup −1} plots gives a straight line corresponding to activation energies 0.773 eV and 0.870 eV, respectively. A Φ{sub b0} versus 1/T plot was drawn to obtain evidence of a Gaussian distribution of the BHs, and values of Φ{sup ¯}{sub b0} = 1.071 eV and σ{sub 0} = 0.094 V for the mean BH and zero-bias standard deviation have been obtained from this plot.

  2. The current–voltage and capacitance–voltage characteristics at high temperatures of Au Schottky contact to n-type GaAs

    International Nuclear Information System (INIS)

    Özerli, Halil; Karteri, İbrahim; Karataş, Şükrü; Altindal, Şemsettin

    2014-01-01

    Highlights: • The electronic parameters of the diode under temperature were investigated. • The barrier heights have a Gaussian distribution. • Au/n-GaAs diode exhibits a rectification behavior. - Abstract: We have investigated the temperature-dependent current–voltage (I–V) and capacitance–voltage (C–V) characteristics of Au/n-GaAs Schottky barrier diodes (SBDs) in the temperature range of 280–415 K. The barrier height for the Au/n-type GaAs SBDs from the I–V and C–V characteristics have varied from 0.901 eV to 0.963 eV (I–V) and 1.234 eV to 0.967 eV (C–V), and the ideality factor (n) from 1.45 to 1.69 in the temperature range 280–415 K. The conventional Richardson plots are found to be linear in the temperature range measured. Both the ln(I 0 /T 2 ) versus (kT) −1 and ln(I 0 /T 2 ) versus (nkT) −1 plots gives a straight line corresponding to activation energies 0.773 eV and 0.870 eV, respectively. A Φ b0 versus 1/T plot was drawn to obtain evidence of a Gaussian distribution of the BHs, and values of Φ ¯ b0 = 1.071 eV and σ 0 = 0.094 V for the mean BH and zero-bias standard deviation have been obtained from this plot

  3. Temperature and Magnetic Field Driven Modifications in the I-V Features of Gold-DNA-Gold Structure

    Directory of Open Access Journals (Sweden)

    Nadia Mahmoudi Khatir

    2014-10-01

    Full Text Available The fabrication of Metal-DNA-Metal (MDM structure-based high sensitivity sensors from DNA micro-and nanoarray strands is a key issue in their development. The tunable semiconducting response of DNA in the presence of external electromagnetic and thermal fields is a gift for molecular electronics. The impact of temperatures (25–55 °C and magnetic fields (0–1200 mT on the current-voltage (I-V features of Au-DNA-Au (GDG structures with an optimum gap of 10 μm is reported. The I-V characteristics acquired in the presence and absence of magnetic fields demonstrated the semiconducting diode nature of DNA in GDG structures with high temperature sensitivity. The saturation current in the absence of magnetic field was found to increase sharply with the increase of temperature up to 45 °C and decrease rapidly thereafter. This increase was attributed to the temperature-assisted conversion of double bonds into single bond in DNA structures. Furthermore, the potential barrier height and Richardson constant for all the structures increased steadily with the increase of external magnetic field irrespective of temperature variations. Our observation on magnetic field and temperature sensitivity of I-V response in GDG sandwiches may contribute towards the development of DNA-based magnetic sensors.

  4. Beam Based RF Voltage Measurements and Longitudinal Beam Tomography at the Fermilab Booster

    Energy Technology Data Exchange (ETDEWEB)

    Bhat, C. M. [Fermilab; Bhat, S. [Fermilab

    2017-10-19

    Increasing proton beam power on neutrino production targets is one of the major goals of the Fermilab long term accelerator programs. In this effort, the Fermilab 8 GeV Booster synchrotron plays a critical role for at least the next two decades. Therefore, understanding the Booster in great detail is important as we continue to improve its performance. For example, it is important to know accurately the available RF power in the Booster by carrying out beam-based measurements in order to specify the needed upgrades to the Booster RF system. Since the Booster magnetic field is changing continuously measuring/calibrating the RF voltage is not a trivial task. Here, we present a beam based method for the RF voltage measurements. Data analysis is carried out using computer programs developed in Python and MATLAB. The method presented here is applicable to any RCS which do not have flat-bottom and flat-top in the acceleration magnetic ramps. We have also carried out longitudinal beam tomography at injection and extraction energies with the data used for RF voltage measurements. Beam based RF voltage measurements and beam tomography were never done before for the Fermilab Booster. The results from these investigations will be very useful in future intensity upgrades.

  5. A Four-Phase High Voltage Conversion Ratio Bidirectional DC-DC Converter for Battery Applications

    Directory of Open Access Journals (Sweden)

    Li-Kun Xue

    2015-06-01

    Full Text Available This study presents a four-phase interleaved high voltage conversion ratio bidirectional DC-DC converter circuit based on coupled inductors and switched capacitors, which can eliminate the defects of conventional high voltage conversion ratio bidirectional DC-DC converters in terms of high-voltage/current stress, less efficiency and low-power limitation. Parallel channels are used to reduce current stress at the low-voltage side and series connected switched capacitors are used to enlarge voltage conversion ratio, reduce voltage stress and achieve auto current sharing. This paper proposes the operation principle, feature analysis and optimization design considerations. On this basis the objectives of high voltage conversion ratio, low voltage/current stress, high power density, high efficiency and high-power applications can be achieved. Some experimental results based on a 500 W prototype converter (24 V to 48 V at low-voltage side, 400 V at high-voltage side are given to verify the theoretical analysis and the effectiveness of the proposed converter.

  6. Assessment of the operating conditions of coordinated Q-V controller within secondary voltage control system

    Directory of Open Access Journals (Sweden)

    Arnautović Dušan

    2014-01-01

    Full Text Available The paper, discusses the possibility to use coordinated Q-V controller (CQVC to perform secondary voltage control at the power plant level. The CQVC performs the coordination of the synchronous generators' (SG reactive power outputs in order to maintain the same total reactive power delivered by the steam power plant (SPP, while at the same time maintaining a constant voltage with programmed reactive droop characteristic at the SPP HV busbar. This busbar is the natural pilot node for secondary voltage control at HV level as the node with maximum power production and maximum power consumption. In addition to voltage control, the CQVC maintains the uniform allocation of reactive power reserves at all SGs in the power plant. This is accomplished by setting the reactive power of each SG at given operating point in accordance to the available reactive power of the same SG at that point. Different limitations imposed by unit's and plant equipment are superimposed on original SG operating chart (provided by the manufacturer in order to establish realistic limits of SG operation at given operating point. The CQVC facilitates: i practical implementation of secondary voltage control in power system, as it is capable of ensuring delivery of reactive power as requested by regional/voltage control while maintaining voltage at system pilot node, ii the full deployment of available reactive power of SGs which in turn contributes to system stability, iii assessment of the reactive power impact/contribution of each generator in providing voltage control as ancillary service. Furthermore, it is also possible to use CQVC to pricing reactive power production cost at each SG involved and to design reactive power bidding structure for transmission network devices by using recorded data. Practical exploitation experience acquired during CQVC continuous operation for over two years enabled implementation of the optimal setting of reference voltage and droop on daily

  7. Unified Drain Current Model of Armchair Graphene Nanoribbons with Uniaxial Strain and Quantum Effect

    Directory of Open Access Journals (Sweden)

    EngSiew Kang

    2014-01-01

    Full Text Available A unified current-voltage I-V model of uniaxial strained armchair graphene nanoribbons (AGNRs incorporating quantum confinement effects is presented in this paper. The I-V model is enhanced by integrating both linear and saturation regions into a unified and precise model of AGNRs. The derivation originates from energy dispersion throughout the entire Brillouin zone of uniaxial strained AGNRs based on the tight-binding approximation. Our results reveal the modification of the energy band gap, carrier density, and drain current upon strain. The effects of quantum confinement were investigated in terms of the quantum capacitance calculated from the broadening density of states. The results show that quantum effect is greatly dependent on the magnitude of applied strain, gate voltage, channel length, and oxide thickness. The discrepancies between the classical calculation and quantum calculation were also measured and it has been found to be as high as 19% drive current loss due to the quantum confinement. Our finding which is in good agreement with the published data provides significant insight into the device performance of uniaxial strained AGNRs in nanoelectronic applications.

  8. Automated tube voltage adaptation in head and neck computed tomography between 120 and 100 kV: effects on image quality and radiation dose

    Energy Technology Data Exchange (ETDEWEB)

    May, Matthias S.; Uder, Michael; Lell, Michael M. [University Hospital Erlangen, Department of Radiology, Erlangen (Germany); University Erlangen, Imaging Science Institute, Erlangen (Germany); Kramer, Manuel R.; Eller, Achim; Wuest, Wolfgang; Scharf, Michael; Brand, Michael; Saake, Marc [University Hospital Erlangen, Department of Radiology, Erlangen (Germany); Schmidt, Bernhard [Siemens Healthcare, Erlangen (Germany)

    2014-09-15

    Low tube voltage allows for computed tomography (CT) imaging with increased iodine contrast at reduced radiation dose. We sought to evaluate the image quality and potential dose reduction using a combination of attenuation based tube current modulation (TCM) and automated tube voltage adaptation (TVA) between 100 and 120 kV in CT of the head and neck. One hundred thirty consecutive patients with indication for head and neck CT were examined with a 128-slice system capable of TCM and TVA. Reference protocol was set at 120 kV. Tube voltage was reduced to 100 kV whenever proposed by automated analysis of the localizer. An additional small scan aligned to the jaw was performed at a fixed 120 kV setting. Image quality was assessed by two radiologists on a standardized Likert-scale and measurements of signal- (SNR) and contrast-to-noise ratio (CNR). Radiation dose was assessed as CTDI{sub vol}. Diagnostic image quality was excellent in both groups and did not differ significantly (p = 0.34). Image noise in the 100 kV data was increased and SNR decreased (17.8/9.6) in the jugular veins and the sternocleidomastoid muscle when compared to 120 kV (SNR 24.4/10.3), but not in fatty tissue and air. However, CNR did not differ statistically significant between 100 (23.5/14.4/9.4) and 120 kV data (24.2/15.3/8.6) while radiation dose was decreased by 7-8 %. TVA between 100 and 120 kV in combination with TCM led to a radiation dose reduction compared to TCM alone, while keeping CNR constant though maintaining diagnostic image quality. (orig.)

  9. Evidence for intrinsic critical current density in high Tc superconductors

    International Nuclear Information System (INIS)

    Freltoft, T.; Minnhagen, P.; Jeldtoft Jensen, H.

    1991-01-01

    We present measurements of the voltage-current characteristics of high quality epitaxial YBaCuO films in zero magnetic field. According to the predictions of a current induced vortex pair breaking picture the voltage should follow the functional form V∝I(I-I c ) a-1 . An analysis designed to test this functional behavior is carried out. Consistency is found. (orig.)

  10. Development and Application of a Wireless Sensor for Space Charge Density Measurement in an Ultra-High-Voltage, Direct-Current Environment.

    Science.gov (United States)

    Xin, Encheng; Ju, Yong; Yuan, Haiwen

    2016-10-20

    A space charge density wireless measurement system based on the idea of distributed measurement is proposed for collecting and monitoring the space charge density in an ultra-high-voltage direct-current (UHVDC) environment. The proposed system architecture is composed of a number of wireless nodes connected with space charge density sensors and a base station. The space charge density sensor based on atmospheric ion counter method is elaborated and developed, and the ARM microprocessor and Zigbee radio frequency module are applied. The wireless network communication quality and the relationship between energy consumption and transmission distance in the complicated electromagnetic environment is tested. Based on the experimental results, the proposed measurement system demonstrates that it can adapt to the complex electromagnetic environment under the UHVDC transmission lines and can accurately measure the space charge density.

  11. Alternating current losses of a 10 metre long low loss superconducting cable conductor determined from phase sensitive measurements

    DEFF Research Database (Denmark)

    Olsen, Søren Krüger; Kühle (fratrådt), Anders Van Der Aa; Træholt, Chresten

    1999-01-01

    The ac loss of a superconducting cable conductor carrying an ac current is small. Therefore the ratio between the inductive (out-of-phase) and the resistive (in-phase) voltages over the conductor is correspondingly high. In vectorial representations this results in phase angles between the current......-in amplifiers can be exploited. In this paper we present the results from ac-loss measurements on a low loss 10 metre long high temperature superconducting cable conductor using such a correction scheme. Measurements were carried out with and without a compensation circuit that could reduce-the inductive...... voltage. The 1 mu V cm(-1) critical current of the conductor was 3240 A at 77 K. At an rms current of 2 kA (50 Hz) the ac loss was derived to be 0.6 +/- 0.15 W m(-1). This is, to the best of our knowledge, the lowest value of ac loss of a high temperature superconducting cable conductor reported so far...

  12. Full Scale Earth Fault Experiments on 10 kV laboratory network with comparative Measurements on Conventional CT's and VT's

    DEFF Research Database (Denmark)

    Sørensen, Stefan; Nielsen, Hans Ove; Bak-Jensen, Birgitte

    2002-01-01

    In this paper we present a result of a full scale earth fault carried out on the 10 kV research/laboratory distribution network at Kyndbyvaerket Denmark in May 2001. The network is compensated through a Petersen-Coil and current and voltage measurements were measured on conventional current....... The necessity of high bandwidth measurement equipment for earth fault measurements on compensated distribution networks can be undermined, since it will be shown that the transient signal transfer through conventional CT?s and VT?s for further signal analysis is sufficient. Caused the inadequacy three phase...

  13. Phosphorene as a Superior Gas Sensor: Selective Adsorption and Distinct I-V Response.

    Science.gov (United States)

    Kou, Liangzhi; Frauenheim, Thomas; Chen, Changfeng

    2014-08-07

    Recent reports on the fabrication of phosphorene, that is, mono- or few-layer black phosphorus, have raised exciting prospects of an outstanding two-dimensional (2D) material that exhibits excellent properties for nanodevice applications. Here, we study by first-principles calculations the adsorption of CO, CO2, NH3, NO, and NO2 gas molecules on a monolayer phosphorene. Our results predict superior sensing performance of phosphorene that rivals or even surpasses that of other 2D materials such as graphene and MoS2. We determine the optimal adsorption positions of these molecules on the phosphorene and identify molecular doping, that is, charge transfer between the molecules and phosphorene, as the driving mechanism for the high adsorption strength. We further calculated the current-voltage (I-V) relation using the nonequilibrium Green's function (NEGF) formalism. The transport features show large (1-2 orders of magnitude) anisotropy along different (armchair or zigzag) directions, which is consistent with the anisotropic electronic band structure of phosphorene. Remarkably, the I-V relation exhibits distinct responses with a marked change of the I-V relation along either the armchair or the zigzag directions depending on the type of molecules. Such selectivity and sensitivity to adsorption makes phosphorene a superior gas sensor that promises wide-ranging applications.

  14. Current–voltage characteristics of high-voltage 4H-SiC p{sup +}–n{sub 0}–n{sup +} diodes in the avalanche breakdown mode

    Energy Technology Data Exchange (ETDEWEB)

    Ivanov, P. A., E-mail: Pavel.Ivanov@mail.ioffe.ru; Potapov, A. S.; Samsonova, T. P.; Grekhov, I. V. [Ioffe Physical–Technical Institute (Russian Federation)

    2017-03-15

    p{sup +}–n{sub 0}–n{sup +} 4H-SiC diodes with homogeneous avalanche breakdown at 1860 V are fabricated. The pulse current–voltage characteristics are measured in the avalanche-breakdown mode up to a current density of 4000 A/cm{sup 2}. It is shown that the avalanche-breakdown voltage increases with increasing temperature. The following diode parameters are determined: the avalanche resistance (8.6 × 10{sup –2} Ω cm{sup 2}), the electron drift velocity in the n{sub 0} base at electric fields higher than 10{sup 6} V/cm (7.8 × 10{sup 6} cm/s), and the relative temperature coefficient of the breakdown voltage (2.1 × 10{sup –4} K{sup –1}).

  15. Analytical expressions for correction factors for noise measurements with a four-point probe

    NARCIS (Netherlands)

    Vandamme, L.K.J.; Leroy, G.

    2006-01-01

    The linear four-point probe method is useful to measure the resistivity, by passing a current I14 through the outer probes and by measuring the voltage V23 between the inner probes. The contacts are on a line and denoted by 1, 2, 3, 4, respectively. The sheet resistance for thin layers with

  16. A high-DC-voltage GaAs photoemission gun: Transverse emittance and momentum spread measurements

    International Nuclear Information System (INIS)

    Engwall, D.; Bohn, C.; Cardman, L.

    1997-01-01

    We have built a high-DC-voltage photoemission gun and a diagnostic beamline permitting us to measure rms transverse emittance (ε x ) and rms momentum spread (δ) of short-duration electron pulses produced by illuminating the cathode with light from a mode-locked, frequency-doubled Nd:YLF laser. The electron gun is a GaAs photocathode source designed to operate at 500kV. We have measured ε x and δ for conditions ranging from emittance-dominated to space-charge-dominated. We report these measurements as functions of microbunch charge for different beam radii, pulse lengths, and voltages/field gradients at the cathode, and compare them with PARMELA calculations

  17. Realization of Nth-Order Voltage Transfer Function using Current Conveyors CCII

    Directory of Open Access Journals (Sweden)

    K. Vrba

    1997-06-01

    Full Text Available A universal method for the realization of arbitrary voltage transfer function in canonic form is presented. A voltage-controlled current-source using a plus-type second-generation current conveyor is here applied as the basic building element. Filters designed according to this method have a high input impedance and low sensitivity to variations of circuit parameters. All passive elements are grounded.

  18. Luminescence evolution from alumina ceramic surface before flashover under direct and alternating current voltage in vacuum

    Energy Technology Data Exchange (ETDEWEB)

    Su, Guo-Qiang; Wang, Yi-Bo; Song, Bai-Peng; Mu, Hai-Bao, E-mail: haibaomu@xjtu.edu.cn, E-mail: gjzhang@xjtu.edu.cn; Zhang, Guan-Jun, E-mail: haibaomu@xjtu.edu.cn, E-mail: gjzhang@xjtu.edu.cn [State Key Laboratory of Electrical Insulation and Power Equipment, School of Electrical Engineering, Xi’an Jiaotong University, Xi’an, Shaanxi 710049 (China); Li, Feng; Wang, Meng [Institute of Fluid Physics, China Academy of Engineering Physics, Mianyang, Sichuan 621900 (China)

    2016-06-15

    The luminescence evolution phenomena from alumina ceramic surface in vacuum under high voltage of direct and alternating current are reported, with the voltage covering a large range from far below to close to the flashover voltage. Its time resolved and spatial distributed behaviors are examined by a photon counting system and an electron-multiplying charge-coupled device (EMCCD) together with a digital camera, respectively. The luminescence before flashover exhibits two stages as voltage increasing, i.e., under a relative low voltage (Stage A), the luminescence is ascribed to radiative recombination of hetero-charges injected into the sample surface layer by Schottky effect; under a higher voltage (Stage B), a stable secondary electron emission process, resulting from the Fowler-Nordheim emission at the cathode triple junction (CTJ), is responsible for the luminescence. Spectrum analysis implies that inner secondary electrons within the surface layer of alumina generated during the SSEE process also participate in the luminescence of Stage B. A comprehensive interpretation of the flashover process is formulated, which might promote a better understanding of flashover issue in vacuum.

  19. Thermal drift reduction with multiple bias current for MOSFET dosimeters

    Energy Technology Data Exchange (ETDEWEB)

    Carvajal, M A; Martinez-Olmos, A; Morales, D P; Lopez-Villanueva, J A; Palma, A J [Departamento de Electronica y TecnologIa de Computadores, ETSIIT, Universidad de Granada, E-18071 Granada (Spain); Lallena, A M, E-mail: carvajal@ugr.es [Departamento de Fisica Atomica, Molecular y Nuclear, Universidad de Granada, E-18071 Granada (Spain)

    2011-06-21

    New thermal compensation methods suitable for p-channel MOSFET (pMOS) dosimeters with the usual dose readout procedure based on a constant drain current are presented. Measuring the source-drain voltage shifts for two or three different drain currents and knowing the value of the zero-temperature coefficient drain current, I{sub ZTC}, the thermal drift of source-drain or threshold voltages can be significantly reduced. Analytical expressions for the thermal compensation have been theoretically deduced on the basis of a linear dependence on temperature of the parameters involved. The proposed thermal modelling has been experimentally proven. These methods have been applied to a group of ten commercial pMOS transistors (3N163). The thermal coefficients of the source-drain voltage and the threshold voltage were reduced from -3.0 mV deg. C{sup -1}, in the worst case, down to -70 {mu}V deg. C{sup -1}. This means a thermal drift of -2.4 mGy deg. C{sup -1} for the dosimeter. When analysing the thermal drifts of all the studied transistors, in the temperature range from 19 to 36 deg. C, uncertainty was obtained in the threshold voltage due to a thermal drift of {+-}9mGy (2 SD), a commonly acceptable value in most radiotherapy treatments. The procedures described herein provide thermal drift reduction comparable to that of other technological or numerical strategies, but can be used in a very simple and low-cost dosimetry sensor.

  20. Design of control system parameters of voltage, current and timer on x-ray device mobile type IX 7-02 using personal computer

    International Nuclear Information System (INIS)

    Sujatno; Tatah Nurbarkah; Toto Trikasjono; Nugroho

    2013-01-01

    The control system has made a parameter X-ray machine mobile IX 7-02 using personal computers. The X-Ray or Roentgen apparatus is an equipment used for medical diagnosis. Before the X-Ray apparatus is operated, its parameter to be set are high voltage (kV), tube current (mA) and exposure time (s). The control system in a conventional X-Ray apparatus still use analog system. On the X-Ray manual operations resulted the value of velocity data that are less accurate, therefore it needs to be carried out a control system modifying using micro controller AT89S51 and the parameter value was setting through personal computer. In the limited voltage regulation to the movement of the stepper motor that drives the chain dimer, the result of testing obtained the value of angle stepper motors with an estimated value of voltage 50 kV, 60 kV, 70 kV, 80 kV, 90 kV and 100 kV respectively 164°, 182°, 200°, 218°, 236° and 258°. Current selection by 4 choices such as 50 mA, 60 mA, 70 mA and 80 mA can successfully activate the relay. The timing of exposure in the range of 0.01 to 1 second which is set through the microcontroller program can be realized as well. The X-ray can be operated with these results. (author)

  1. Voltage Balancing Method on Expert System for 51-Level MMC in High Voltage Direct Current Transmission

    Directory of Open Access Journals (Sweden)

    Yong Chen

    2016-01-01

    Full Text Available The Modular Multilevel Converters (MMC have been a spotlight for the high voltage and high power transmission systems. In the VSC-HVDC (High Voltage Direct Current based on Voltage Source Converter transmission system, the energy of DC link is stored in the distributed capacitors, and the difference of capacitors in parameters and charge rates causes capacitor voltage balance which affects the safety and stability of HVDC system. A method of MMC based on the expert system for reducing the frequency of the submodules (SMs of the IGBT switching frequency is proposed. Firstly, MMC with 51 levels for HVDC is designed. Secondly, the nearest level control (NLC for 51-level MMC is introduced. Thirdly, a modified capacitor voltage balancing method based on expert system for MMC-based HVDC transmission system is proposed. Finally, a simulation platform for 51-level Modular Multilevel Converter is constructed by using MATLAB/SIMULINK. The results indicate that the strategy proposed reduces the switching frequency on the premise of keeping submodule voltage basically identical, which greatly reduces the power losses for MMC-HVDC system.

  2. Tentative type test of a non-invasive high-voltage meter with respect to the quantity of practical peak voltage

    International Nuclear Information System (INIS)

    Peixoto, J.G.P.; Selbach, H.J.; Kramer, H.M.; Lange, B.

    2001-04-01

    In Working Group 3 of Sub-committee 62C of the international electrotechnical commission (IEC) a new project is underway [1] with the objective of specifying requirements for the performance characteristics of instruments for the non-invasive measurement of the X-ray tube voltage in diagnostic radiology. In this draft the X-ray tube voltage is specified in terms of the practical peak voltage [2]. The objective of the present work is to perform a tentative type test, based on the ''Requirements for Instruments for Non-invasive Measurements of the X-ray Tube Voltage'' defined in the IEC draft, with a commercially available non-invasive high-voltage meter. The instrument was modified so that the practical peak voltage can be measured. It is shown that the instrument, with the modifications made, is suitable for the non-invasive measurement of the practical peak voltage between 50 kV and 150 kV within the required limits of variation of the response. (orig.)

  3. AC transmission, with very high voltages and the 750 kV line

    Energy Technology Data Exchange (ETDEWEB)

    Bocker, H

    1964-01-01

    The economic case for adoption of extra-high voltages for transmitting electric power over distances of the order of 1000 km is discussed. Some special technical developments for solving the problems attached to such high voltages are briefly discussed, particularly in the fields of switching and transients suppression. The first 750-kV projects in Canada and Russia are mentioned. Equipment, e.g., bushings, transformers, etc., operating at such voltages are illustrated.

  4. Analysis of the current–voltage curves and saturation currents in burner-stabilised premixed flames with detailed ion chemistry and transport models

    KAUST Repository

    Belhi, Memdouh

    2018-05-22

    Current-voltage, or i–V, curves are used in combustion to characterise the ionic structure of flames. The objective of this paper is to develop a detailed modelling framework for the quantitative prediction of the i–V curves in methane/air flames. Ion and electron transport coefficients were described using methods appropriate for charged species interactions. An ionic reaction mechanism involving cations, anions and free electrons was used, together with up-to-date rate coefficients and thermodynamic data. Because of the important role of neutral species in the ion production process, its prediction by the detailed AramcoMech 1.4 mechanism was optimised by using available experimental measurements. Model predictions were evaluated by comparing to i–V curves measured in atmospheric-pressure, premixed, burner-stabilised flames. A detailed evaluation of the reliability of ion kinetic and transport parameters adopted was performed. The model provides good quantitative agreement with experimental data for various conditions.

  5. Effect of voltage waveform on dielectric barrier discharge ozone production efficiency

    Science.gov (United States)

    Mericam-Bourdet, N.; Kirkpatrick, M. J.; Tuvache, F.; Frochot, D.; Odic, E.

    2012-03-01

    Dielectric barrier discharges (DBDs) are commonly used for gas effluent cleanup and ozone generation. For these applications, the energy efficiency of the discharge is a major concern. This paper reports on investigations carried out on the voltage shape applied to DBD reactor electrodes, aiming to evaluate a possible energy efficiency improvement for ozone production. Two DBD reactor geometries were used: pin-to-pin and cylinder-to-cylinder, both driven either by a bi-directional power supply (voltage rise rate 1 kV/μs) or by a pulsed power supply (voltage rise rate 1 kV/ns). Ozone formed in dry air was measured at the reactor outlet. Special attention was paid to discharge input power evaluation using different methods including instantaneous current-voltage product and transferred charge-applied voltage figures. The charge transferred by the discharges was also correlated to the ozone production. It is shown that, in the case of the DBD reactors under investigation, the applied voltage shape has no influence on the ozone production efficiency. For the considered voltage rise rate, the charge deposit on the dielectric inserted inside the discharge gap is the important factor (as opposed to the voltage shape) governing the efficiency of the discharge - it does this by tailoring the duration of the current peak into the tens of nanosecond range.

  6. H∞ Robust Current Control for DFIG Based Wind Turbine subject to Grid Voltage Distortions

    DEFF Research Database (Denmark)

    Wang, Yun; Wu, Qiuwei; Gong, Wenming

    2016-01-01

    This paper proposes an H∞ robust current controller for doubly fed induction generator (DFIG) based wind turbines (WTs) subject to grid voltage distortions. The controller is to mitigate the impact of the grid voltage distortions on rotor currents with DFIG parameter perturbation. The grid voltage...... distortions considered include asymmetric voltage dips and grid background harmonics. An uncertain DFIG model is developed with uncertain factors originating from distorted stator voltage, and changed generator parameters due to the flux saturation effect, the skin effect, etc. Weighting functions...... are designed to efficiently track the unbalanced current components and the 5th and 7th background harmonics. The robust stability (RS) and robust performance (RP) of the proposed controller are verified by the structured singular value µ. The performance of the H∞ robust current controller was demonstrated...

  7. Biphasic voltage-dependent inactivation of human NaV 1.3, 1.6 and 1.7 Na+ channels expressed in rodent insulin-secreting cells.

    Science.gov (United States)

    Godazgar, Mahdieh; Zhang, Quan; Chibalina, Margarita V; Rorsman, Patrik

    2018-05-01

    Na + current inactivation is biphasic in insulin-secreting cells, proceeding with two voltage dependences that are half-maximal at ∼-100 mV and -60 mV. Inactivation of voltage-gated Na + (Na V ) channels occurs at ∼30 mV more negative voltages in insulin-secreting Ins1 and primary β-cells than in HEK, CHO or glucagon-secreting αTC1-6 cells. The difference in inactivation between Ins1 and non-β-cells persists in the inside-out patch configuration, discounting an involvement of a diffusible factor. In Ins1 cells and primary β-cells, but not in HEK cells, inactivation of a single Na V subtype is biphasic and follows two voltage dependences separated by 30-40 mV. We propose that Na V channels adopt different inactivation behaviours depending on the local membrane environment. Pancreatic β-cells are equipped with voltage-gated Na + channels that undergo biphasic voltage-dependent steady-state inactivation. A small Na + current component (10-15%) inactivates over physiological membrane potentials and contributes to action potential firing. However, the major Na + channel component is completely inactivated at -90 to -80 mV and is therefore inactive in the β-cell. It has been proposed that the biphasic inactivation reflects the contribution of different Na V α-subunits. We tested this possibility by expression of TTX-resistant variants of the Na V subunits found in β-cells (Na V 1.3, Na V 1.6 and Na V 1.7) in insulin-secreting Ins1 cells and in non-β-cells (including HEK and CHO cells). We found that all Na V subunits inactivated at 20-30 mV more negative membrane potentials in Ins1 cells than in HEK or CHO cells. The more negative inactivation in Ins1 cells does not involve a diffusible intracellular factor because the difference between Ins1 and CHO persisted after excision of the membrane. Na V 1.7 inactivated at 15--20 mV more negative membrane potentials than Na V 1.3 and Na V 1.6 in Ins1 cells but this small difference is insufficient to solely

  8. On the current-voltage relationship in fluid theory

    Directory of Open Access Journals (Sweden)

    P. Janhunen

    1999-01-01

    Full Text Available The kinetic theory of precipitating electrons with Maxwellian source plasma yields the well-known current-voltage relationship (CV-relationship; Knight formula, which can in most cases be accurately approximated by a reduced linear formula. Our question is whether it is possible to obtain this CV-relationship from fluid theory, and if so, to what extent it is physically equivalent with the more accurate kinetic counterpart. An answer to this question is necessary before trying to understand how one could combine time-dependent and transient phenomena such as Alfvénic waves with a slowly evolving background described by the CV-relationship. We first compute the fluid quantity profiles (density, pressure etc. along a flux tube based on kinetic theory solution. A parallel potential drop accumulates plasma (and pressure below it, which explains why the current is linearly proportional to the potential drop in the kinetic theory even though the velocity of the accelerated particles is only proportional to the square root of the accelerating voltage. Electron fluid theory reveals that the kinetic theory results can be reproduced, except for different numerical constants, if and only if the polytropic index γ is equal to three, corresponding to one-dimensional motion. The convective derivative term v·∇v provides the equivalent of the "mirror force" and is therefore important to include in a fluid theory trying to describe a CV-relationship. In one-fluid equations the parallel electric field, at least in its functional form, emerges self-consistently. We find that the electron density enhancement below the potential drop disappears because the magnetospheric ions would be unable to neutralize it, and a square root CV-relationship results, in disagreement with kinetic theory and observations. Also, the potential drop concentrates just above the ionosphere, which is at odds with observations as well. To resolve this puzzle, we show that considering

  9. On the current-voltage relationship in fluid theory

    Directory of Open Access Journals (Sweden)

    P. Janhunen

    Full Text Available The kinetic theory of precipitating electrons with Maxwellian source plasma yields the well-known current-voltage relationship (CV-relationship; Knight formula, which can in most cases be accurately approximated by a reduced linear formula. Our question is whether it is possible to obtain this CV-relationship from fluid theory, and if so, to what extent it is physically equivalent with the more accurate kinetic counterpart. An answer to this question is necessary before trying to understand how one could combine time-dependent and transient phenomena such as Alfvénic waves with a slowly evolving background described by the CV-relationship. We first compute the fluid quantity profiles (density, pressure etc. along a flux tube based on kinetic theory solution. A parallel potential drop accumulates plasma (and pressure below it, which explains why the current is linearly proportional to the potential drop in the kinetic theory even though the velocity of the accelerated particles is only proportional to the square root of the accelerating voltage. Electron fluid theory reveals that the kinetic theory results can be reproduced, except for different numerical constants, if and only if the polytropic index γ is equal to three, corresponding to one-dimensional motion. The convective derivative term v·∇v provides the equivalent of the "mirror force" and is therefore important to include in a fluid theory trying to describe a CV-relationship. In one-fluid equations the parallel electric field, at least in its functional form, emerges self-consistently. We find that the electron density enhancement below the potential drop disappears because the magnetospheric ions would be unable to neutralize it, and a square root CV-relationship results, in disagreement with kinetic theory and observations. Also, the potential drop concentrates just above the ionosphere, which is at odds with observations as well. To resolve this puzzle, we show that considering

  10. Forward Current Transport Mechanisms of Ni/Au—InAlN/AlN/GaN Schottky Diodes

    Science.gov (United States)

    Wang, Xiao-Feng; Shao, Zhen-Guang; Chen, Dun-Jun; Lu, Hai; Zhang, Rong; Zheng, You-Dou

    2014-05-01

    We fabricate two Ni/Au-In0.17Al0.83N/AlN/GaN Schottky diodes on substrates of sapphire and Si, respectively, and investigate their forward-bias current transport mechanisms by temperature-dependent current-voltage measurements. In the temperature range of 300-485 K, the Schottky barrier heights (SBHs) calculated by using the conventional thermionic-emission (TE) model are strongly positively dependent on temperature, which is in contrast to the negative-temperature-dependent characteristic of traditional semiconductor Schottky diodes. By fitting the forward-bias I-V characteristics using different current transport models, we find that the tunneling current model can describe generally the I-V behaviors in the entire measured range of temperature. Under the high forward bias, the traditional TE mechanism also gives a good fit to the measured I-V data, and the actual barrier heights calculated according to the fitting TE curve are 1.434 and 1.413 eV at 300K for InAlN/AlN/GaN Schottky diodes on Si and the sapphire substrate, respectively, and the barrier height shows a slightly negative temperature coefficient. In addition, a formula is given to estimate SBHs of Ni/Au—InAlN/AlN/GaN Schottky diodes taking the Fermi-level pinning effect into account.

  11. Voltage Sensing in Membranes: From Macroscopic Currents to Molecular Motions.

    Science.gov (United States)

    Freites, J Alfredo; Tobias, Douglas J

    2015-06-01

    Voltage-sensing domains (VSDs) are integral membrane protein units that sense changes in membrane electric potential, and through the resulting conformational changes, regulate a specific function. VSDs confer voltage-sensitivity to a large superfamily of membrane proteins that includes voltage-gated Na[Formula: see text], K[Formula: see text], Ca[Formula: see text] ,and H[Formula: see text] selective channels, hyperpolarization-activated cyclic nucleotide-gated channels, and voltage-sensing phosphatases. VSDs consist of four transmembrane segments (termed S1 through S4). Their most salient structural feature is the highly conserved positions for charged residues in their sequences. S4 exhibits at least three conserved triplet repeats composed of one basic residue (mostly arginine) followed by two hydrophobic residues. These S4 basic side chains participate in a state-dependent internal salt-bridge network with at least four acidic residues in S1-S3. The signature of voltage-dependent activation in electrophysiology experiments is a transient current (termed gating or sensing current) upon a change in applied membrane potential as the basic side chains in S4 move across the membrane electric field. Thus, the unique structural features of the VSD architecture allow for competing requirements: maintaining a series of stable transmembrane conformations, while allowing charge motion, as briefly reviewed here.

  12. Capacitance-voltage investigation of silicon photodiodes damaged by MeV energy light ions

    International Nuclear Information System (INIS)

    Kalinka, G.; Simon, A.; Novak, M.; Kiss, A.Z.

    2006-01-01

    Complete text of publication follows. Nuclear radiation creates not only deep centers, but in addition influences shallow dopant concentration in semiconductors, as well. At a given temperature the maximum frequency a center can respond to depends on its energy level, therefore the capacitance-voltage (C-V) characteristics of radiation damaged semiconductor diodes should ideally be measured as function of frequency in order to obtain the physical and energy depth distribution of ionized centers [1,2]. In our experiments C-V plots of MeV energy ion irradiated photodiodes were taken at fixed 1 kHz frequency, which is low enough to be sensitive at room temperature to some of the deep levels expected. During, for example, an irradiation with 5.5 MeV α particles the capacitance of a p + nn + diode increased significantly at low voltages, but showed rather small changes at higher ones. The former turned out to be merely related to a decrease of the built in voltage, corresponding to a lifetime to relaxation type transition of the semiconductor [3]. Rescaling C-V data for this change, the remaining, actual capacitance changes could be interpreted as related to nuclear recoil caused damage located around the end of particle tracks. C-V technique has also been used for follow up investigation of spontaneous self annealing at room temperature of irradiated samples. This is shown here by plotting capacitance data normalized to their virgin values as function of depletion depth for irradiation with 430 keV protons, whose range is about 5 μm. The sensitivity of the method is illustrated for low fluence of 6.5 MeV oxygen, whose range is 5 μm, too, and where the normalization is now made to data taken one week after the irradiation. Acknowledgement This work was supported by the Hungarian Research and Technology Innovation Fund and the Croatian Ministry of Science, Education and Sports within the framework of the Hungarian-Croatian Intergovernmental Science and Technology Co

  13. Electronic Structure and I- V Characteristics of InSe Nanoribbons

    Science.gov (United States)

    Yao, A.-Long; Wang, Xue-Feng; Liu, Yu-Shen; Sun, Ya-Na

    2018-04-01

    We have studied the electronic structure and the current-voltage ( I-V) characteristics of one-dimensional InSe nanoribbons using the density functional theory combined with the nonequilibrium Green's function method. Nanoribbons having bare or H-passivated edges of types zigzag (Z), Klein (K), and armchair (A) are taken into account. Edge states are found to play an important role in determining their electronic properties. Edges Z and K are usually metallic in wide nanoribbons as well as their hydrogenated counterparts. Transition from semiconductor to metal is observed in hydrogenated nanoribbons HZZH as their width increases, due to the strong width dependence of energy difference between left and right edge states. Nevertheless, electronic structures of other nanoribbons vary with the width in a very limited scale. The I-V characteristics of bare nanoribbons ZZ and KK show strong negative differential resistance, due to spatial mismatch of wave functions in energy bands around the Fermi energy. Spin polarization in these nanoribbons is also predicted. In contrast, bare nanoribbons AA and their hydrogenated counterparts HAAH are semiconductors. The band gaps of nanoribbons AA (HAAH) are narrower (wider) than that of two-dimensional InSe monolayer and increase (decrease) with the nanoribbon width.

  14. Low-temperature current-voltage characteristics of MIS Cu/n-GaAs and inhomogeneous Cu/n-GaAs Schottky diodes

    Energy Technology Data Exchange (ETDEWEB)

    Biber, M

    2003-01-01

    The current-voltage (I-V) characteristics of metal-insulating layer-semiconductor Cu/n-GaAs and inhomogeneous Cu/n-GaAs Schottky barrier diodes were determined in the temperature range 80-300 K. The evaluation of the experimental I-V data reveals a nonlinear increase of the zero-bias barrier height (qPHI{sub 0}) for the inhomogeneous Cu/n-GaAs Schottky barrier diodes and a linear increase of the zero-bias barrier height (qPHI{sub 0}) for Cu/n-GaAs Schottky barrier diodes with an interfacial layer. The ideality factor n decreases with increasing temperature for all diodes. Furthermore, the changes in PHI{sub 0} and n become quite significant below 150 K and the plot of ln(I{sub 0}/T{sup 2}) versus 1/T exhibits a non-linearity below 180 K for the inhomogeneous barrier diodes. Such behavior is attributed to barrier inhomogeneities by assuming a Gaussian distribution of barrier heights at the interface. The value of the Richardson constant was found to be 5.033 A/cm{sup 2} K{sup 2}, which is close to the theoretical value of 8.16 A/cm{sup 2} K{sup 2} used for the determination of the zero-bias barrier height.

  15. Instability of Wind Turbine Converters during Current Injection to Low Voltage Grid Faults and PLL Frequency Based Stability Solution

    DEFF Research Database (Denmark)

    Göksu, Ömer; Teodorescu, Remus; Bak, Claus Leth

    2014-01-01

    In recent grid codes for wind power integration, wind turbines are required to stay connected during grid faults even when the grid voltage drops down to zero; and also to inject reactive current in proportion to the voltage drop. However, a physical fact, instability of grid-connected converters...... during current injection to very low (close to zero) voltage faults, has been omitted, i.e., failed to be noticed in the previous wind power studies and grid code revisions. In this paper, the instability of grid side converters of wind turbines defined as loss of synchronism (LOS), where the wind...... turbines lose synchronism with the grid fundamental frequency (e.g., 50 Hz) during very deep voltage sags, is explored with its theory, analyzed and a novel stability solution based on PLL frequency is proposed; and both are verified with power system simulations and by experiments on a grid...

  16. Modelling of current-voltage characteristics of infrared photo-detectors based on type – II InAs/GaSb super-lattice diodes with unipolar blocking layers

    Directory of Open Access Journals (Sweden)

    Vishnu Gopal

    2015-09-01

    Full Text Available It is shown that current-voltage characteristics of infrared photo-detectors based on type-II InAs/GaSb super-lattices with uni-polar blocking layers can be modelled similar to a junction diode with a finite series resistance on account of blocking barriers. As an example this paper presents the results of a study of current-voltage characteristics of a type II InAs/GaSb super-lattice diode with PbIbN architecture using a recently proposed [J. Appl. Phys. 116, 084502 (2014] method for modelling of illuminated photovoltaic detectors. The thermal diffusion, generation – recombination (g-r, and ohmic currents are found as principal components besides a component of photocurrent due to background illumination. The experimentally observed reverse bias diode current in excess of thermal current (diffusion + g-r, photo-current and ohmic shunt current is reported to be best described by an exponential function of the type, Iexcess = Ir0 + K1exp(K2 V, where Ir0, K1 and K2 are fitting parameters and V is the applied bias voltage. The present investigations suggest that the exponential growth of excess current with the applied bias voltage may be taking place along the localized regions in the diode. These localized regions are the shunt resistance paths on account of the surface leakage currents and/or defects and dislocations in the base of the diode.

  17. Determination of bulk and interface density of states in metal oxide semiconductor thin-film transistors by using capacitance-voltage characteristics

    Science.gov (United States)

    Wei, Xixiong; Deng, Wanling; Fang, Jielin; Ma, Xiaoyu; Huang, Junkai

    2017-10-01

    A physical-based straightforward extraction technique for interface and bulk density of states in metal oxide semiconductor thin film transistors (TFTs) is proposed by using the capacitance-voltage (C-V) characteristics. The interface trap density distribution with energy has been extracted from the analysis of capacitance-voltage characteristics. Using the obtained interface state distribution, the bulk trap density has been determined. With this method, for the interface trap density, it is found that deep state density nearing the mid-gap is approximately constant and tail states density increases exponentially with energy; for the bulk trap density, it is a superposition of exponential deep states and exponential tail states. The validity of the extraction is verified by comparisons with the measured current-voltage (I-V) characteristics and the simulation results by the technology computer-aided design (TCAD) model. This extraction method uses non-numerical iteration which is simple, fast and accurate. Therefore, it is very useful for TFT device characterization.

  18. Defect States in InP/InGaAs/InP Heterostructures by Current-Voltage Characteristics and Deep Level Transient Spectroscopy.

    Science.gov (United States)

    Vu, Thi Kim Oanh; Lee, Kyoung Su; Lee, Sang Jun; Kim, Eun Kyu

    2018-09-01

    We studied defect states in In0.53Ga0.47As/InP heterojunctions with interface control by group V atoms during metalorganic chemical vapor (MOCVD) deposition. From deep level transient spectroscopy (DLTS) measurements, two defects with activation energies of 0.28 eV (E1) and 0.15 eV (E2) below the conduction band edge, were observed. The defect density of E1 for In0.53Ga0.47As/InP heterojunctions with an addition of As and P atoms was about 1.5 times higher than that of the heterojunction added P atom only. From the temperature dependence of current- voltage characteristics, the thermal activation energies of In0.53Ga0.47As/InP of heterojunctions were estimated to be 0.27 and 0.25 eV, respectively. It appeared that the reverse light current for In0.53Ga0.47As/InP heterojunction added P atom increased only by illumination of a 940 nm-LED light source. These results imply that only the P addition at the interface can enhance the quality of InGaAs/InP heterojunction.

  19. Nanosecond pulsed power generator for a voltage amplitude up to 300 kV and a repetition rate up to 16 Hz for fine disintegration of quartz

    Energy Technology Data Exchange (ETDEWEB)

    Krastelev, E. G., E-mail: ekrastelev@yandex.ru; Sedin, A. A.; Tugushev, V. I. [Russian Academy of Sciences, Joint Institute for High Temperatures (Russian Federation)

    2015-12-15

    A generator of high-power high-voltage nanosecond pulses is intended for electrical discharge disintegration of mineral quartz and other nonconducting minerals. It includes a 320 kV Marx pulsed voltage generator, a high-voltage glycerin-insulated coaxial peaking capacitor, and an output gas spark switch followed by a load, an electric discharge disintegration chamber. The main parameters of the generator are as follows: a voltage pulse amplitude of up to 300 kV, an output impedance of ≈10 Ω, a discharge current amplitude of up to 25 kA for a half-period of 80–90 ns, and a pulse repetition rate of up to 16 Hz.

  20. Nanosecond pulsed power generator for a voltage amplitude up to 300 kV and a repetition rate up to 16 Hz for fine disintegration of quartz

    International Nuclear Information System (INIS)

    Krastelev, E. G.; Sedin, A. A.; Tugushev, V. I.

    2015-01-01

    A generator of high-power high-voltage nanosecond pulses is intended for electrical discharge disintegration of mineral quartz and other nonconducting minerals. It includes a 320 kV Marx pulsed voltage generator, a high-voltage glycerin-insulated coaxial peaking capacitor, and an output gas spark switch followed by a load, an electric discharge disintegration chamber. The main parameters of the generator are as follows: a voltage pulse amplitude of up to 300 kV, an output impedance of ≈10 Ω, a discharge current amplitude of up to 25 kA for a half-period of 80–90 ns, and a pulse repetition rate of up to 16 Hz