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Sample records for current-perpendicular-to-the-plane cpp magnetoresistive

  1. Spintronics with metals: Current perpendicular-to-the-plane magneto-transport studies

    Science.gov (United States)

    Sharma, Amit

    In this thesis, we present studies to produce new information about three topics: current perpendicular to the plane magnetoresistance (CPP-MR), spin transfer torque (STT), and antiferromagnetic spintronics. Large values of CPP-MR interface parameters---specific interface resistance (Area times resistance), 2AR*, and scattering asymmetry, gamma---are desirable for the use of CPP-MR in devices. Stimulated by a nanopillar study by the Cornell Group, we first discovered that Py/Al had an unusually large 2AR*, but a small gamma. In the hope of finding metal pairs with large values of both the interface parameters, the Py/Al studies led us to study the following interfaces: (a) F/Al with F: Py (= Ni84Fe16). Co, Fe, Co91Fe9, and (b) F/N: Py/Pd, Fe/V, Fe/Nb and Co/Pt. None of the metal pairs looks better for CPP-MR devices. The Cornell group also found that bracketing Al with thin Cu in Py/Al/Py nanopillars, gave an MR similar to Py/Al/Py rather than to Py/Cu/Py. To try to understand this result, we studied the effect of Cu/Al/Cu spacers on ADeltaR = AR(AP) - AR(P) of Py exchange biased spin valves (EBSVs). Here AR(AP) and AR(P) are the specific resistances in the anti-parallel (AP) and parallel (P) configurations of the F layers. Intriguingly, fixing the Al thickness tAl = 10 nm and varying tCu has no effect on ADeltaR, but fixing tCu = 10 nm and varying t Al significantly affected ADeltaR. These unusual behaviors are probably due to strong Al and Cu intermixing, with probable formation of some fraction of ordered alloys. Recent calculations predicted that 2AR of Al/Ag interfaces would vary substantially with orientation and with alloying. The latter is a special potential problem, because Al and Ag interdiffuse at room temperature. To compare with the calculations, we determined 2AR of sputtered Al/Ag interfaces with (111) orientation. Our estimate agrees with calculations that assume 4 monolayers of interfacial disorder, consistent with modest intermixing. To aid in

  2. CPP magnetoresistance of magnetic multilayers: A critical review

    Science.gov (United States)

    Bass, Jack

    2016-06-01

    We present a comprehensive, critical review of data and analysis of Giant (G) Magnetoresistance (MR) with Current-flow Perpendicular-to-the-layer-Planes (CPP-MR) of magnetic multilayers [F/N]n (n=number of repeats) composed of alternating nanoscale layers of ferromagnetic (F) and non-magnetic (N) metals, or of spin-valves that allow control of anti-parallel (AP) and parallel (P) orientations of the magnetic moments of adjacent F-layers. GMR, a large change in resistance when an applied magnetic field changes the moment ordering of adjacent F-layers from AP to P, was discovered in 1988 in the geometry with Current flow in the layer-Planes (CIP). The CPP-MR has two advantages over the CIP-MR: (1) relatively simple two-current series-resistor (2CSR) and more general Valet-Fert (VF) models allow more direct access to the underlying physics; and (2) it is usually larger, which should be advantageous for devices. When the first CPP-MR data were published in 1991, it was not clear whether electronic transport in GMR multilayers is completely diffusive or at least partly ballistic. It was not known whether the properties of layers and interfaces would vary with layer thickness or number. It was not known whether the CPP-MR would be dominated by scattering within the F-metals or at the F/N interfaces. Nothing was known about: (1) spin-flipping within F-metals, characterized by a spin-diffusion length, lsfF; (2) interface specific resistances (AR=area A times resistance R) for N1/N2 interfaces; (3) interface specific resistances and interface spin-dependent scattering asymmetry at F/N and F1/F2 interfaces; and (4) spin-flipping at F/N, F1/F2 and N1/N2 interfaces. Knowledge of spin-dependent scattering asymmetries in F-metals and F-alloys, and of spin-flipping in N-metals and N-alloys, was limited. Since 1991, CPP-MR measurements have quantified the scattering and spin-flipping parameters that determine GMR for a wide range of F- and N-metals and alloys and of F/N pairs. This

  3. Electromagnetic interference-induced instability in CPP-GMR read heads

    Science.gov (United States)

    Khunkitti, P.; Siritaratiwat, A.; Kaewrawang, A.; Mewes, T.; Mewes, C. K. A.; Kruesubthaworn, A.

    2016-08-01

    Electromagnetic interference (EMI) has been a significant issue for the current perpendicular-to-the-plane giant magnetoresistance (CPP-GMR) read heads because it can cause magnetic failure. Furthermore, the magnetic noise induced by the spin transfer torque (STT) effect has played an important role in the CPP read heads because it can affect the stability of the heads. Accordingly, this work proposed an investigation of the magnetic instabilities induced by EMI through the STT effect in a CPP-GMR read head via micromagnetic simulations. The magnetization fluctuation caused by EMI was examined, and then, magnetic noise was evaluated by using power spectral density analysis. It was found that the magnetization orientation can be fluctuated by EMI in close proximity to the head. The results also showed a multimode spectral density. The main contributions of the spectral density were found to originate at the edges of the stripe height sides due to the characteristics of the demagnetization field inside the free layer. Hence, the magnetic instabilities produced by EMI become a significant factor that essentially impacts the reliability of the CPP-GMR read heads.

  4. Electromagnetic interference-induced instability in CPP-GMR read heads

    Energy Technology Data Exchange (ETDEWEB)

    Khunkitti, P.; Siritaratiwat, A.; Kaewrawang, A. [KKU-Seagate Cooperation Research Laboratory, Department of Electrical Engineering, Faculty of Engineering, Khon Kaen University, Khon Kaen 40002 (Thailand); Mewes, T.; Mewes, C.K.A. [Department of Physics and Astronomy, MINT Center, University of Alabama, Tuscaloosa, AL 35487 (United States); Kruesubthaworn, A., E-mail: anankr@kku.ac.th [KKU-Seagate Cooperation Research Laboratory, Department of Electrical Engineering, Faculty of Engineering, Khon Kaen University, Khon Kaen 40002 (Thailand)

    2016-08-15

    Electromagnetic interference (EMI) has been a significant issue for the current perpendicular-to-the-plane giant magnetoresistance (CPP-GMR) read heads because it can cause magnetic failure. Furthermore, the magnetic noise induced by the spin transfer torque (STT) effect has played an important role in the CPP read heads because it can affect the stability of the heads. Accordingly, this work proposed an investigation of the magnetic instabilities induced by EMI through the STT effect in a CPP-GMR read head via micromagnetic simulations. The magnetization fluctuation caused by EMI was examined, and then, magnetic noise was evaluated by using power spectral density analysis. It was found that the magnetization orientation can be fluctuated by EMI in close proximity to the head. The results also showed a multimode spectral density. The main contributions of the spectral density were found to originate at the edges of the stripe height sides due to the characteristics of the demagnetization field inside the free layer. Hence, the magnetic instabilities produced by EMI become a significant factor that essentially impacts the reliability of the CPP-GMR read heads. - Highlights: • The instability induced by electromagnetic interference in read head is examined. • The magnetization orientation can be fluctuated by electromagnetic interference. • The electromagnetic interference can induce additional noise spectra to the system. • The noise is mainly located at stripe height of the read head. • The noise induced by electromagnetic interference is a crucial factor for the head.

  5. Enhanced stability against spin torque noise in current perpendicular to the plane self-biased differential dual spin valves

    Energy Technology Data Exchange (ETDEWEB)

    Chandra Sekhar, M. [Data Storage Institute, A*STAR (Agency for Science Technology and Research), 5 Engineering Drive 1, DSI Building, Singapore 117608 (Singapore); School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371 (Singapore); Tran, M., E-mail: Michael_TRAN@dsi.a-star.edu.sg [Data Storage Institute, A*STAR (Agency for Science Technology and Research), 5 Engineering Drive 1, DSI Building, Singapore 117608 (Singapore); Wang, L.; Han, G.C. [Data Storage Institute, A*STAR (Agency for Science Technology and Research), 5 Engineering Drive 1, DSI Building, Singapore 117608 (Singapore); Lew, W.S. [School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371 (Singapore)

    2015-01-15

    We present a detailed study of spin-transfer torque induced noise in self-biased differential dual spin valves (DDSV) which could be potentially used as magnetic read-heads for hard-disk drives. Micromagnetics studies of DDSV were performed in all the major magnetic configurations experienced by read-heads and we show that in every case, self-biased DDSV provide a much stronger stability against spin-transfer torque noise than conventional spin valves. Provided are also insights on the influence of the dipolar interlayer coupling, shape anisotropy, exchange bias and relative orientation between the 2 free layers. Our results demonstrate the viability of DDSV read-heads for future hard disk drives generations. - Highlights: • DDSVs show better stability against STT noise as compared to single spin valves. • Flux-closure configuration plays a key role in stabilizing the DDSV against STT noise. • Anti-ferromagnetic interlayer coupling shifts the critical current density for onset of noise. • Gap layer thickness has to be controlled carefully to avoid ferromagnetic coupling.

  6. Magnetoresistive logic and biochip

    Energy Technology Data Exchange (ETDEWEB)

    Brueckl, Hubert E-mail: brueckl@physik.uni-bielefeld.de; Brzeska, Monika; Brinkmann, Dirk; Schotter, J.Joerg; Reiss, Guenter; Schepper, Willi; Kamp, P.-B.; Becker, Anke

    2004-11-01

    While some magnetoresistive devices based on giant magnetoresistance or spin-dependent tunneling are already commercialized, a new branch of development is evolving towards magnetoresistive logic with magnetic tunnel junctions. Furthermore, the new magnetoelectronic effects show promising properties in magnetoresistive biochips, which are capable of detecting even single molecules (e.g. DNA) by functionalized magnetic markers. The unclear limits of this approach are discussed with two model systems.

  7. mCPP: an undesired addition to the ecstasy market.

    Science.gov (United States)

    Bossong, M G; Brunt, T M; Van Dijk, J P; Rigter, S M; Hoek, J; Goldschmidt, H M J; Niesink, R J M

    2010-09-01

    A new ecstasy-like substance, meta-chlorophenylpiperazine (mCPP), has been detected in street drugs in the Netherlands. Theoretically, mCPP possesses the potential to become a non-neurotoxic alternative for methylenedioxymethamphetamine (MDMA), the regular psychoactive substance of ecstasy. Since its introduction on the Dutch market of synthetic drugs, the percentage of mCPP-containing tablets has increased, including both tablets that contain only mCPP and tablets containing a combination of mCPP and MDMA. These tablets occur in many different colours, shapes and sizes and with various logos, making it impossible to distinguish mCPP-containing tablets from regular MDMA tablets. In addition, the reports of users concerning the effects of mCPP are predominantly negative. All these aspects together lead to the conclusion that mCPP is an undesired addition to the ecstasy market from the user's perspective.

  8. Magnetoresistive waves in plasmas

    Science.gov (United States)

    Felber, F. S.; Hunter, R. O., Jr.; Pereira, N. R.; Tajima, T.

    1982-10-01

    The self-generated magnetic field of a current diffusing into a plasma between conductors can magnetically insulate the plasma. Propagation of magnetoresistive waves in plasmas is analyzed. Applications to plasma opening switches are discussed.

  9. Negative magnetoresistivity in holography

    CERN Document Server

    Sun, Ya-Wen

    2016-01-01

    Negative magnetoresistivity is a special magnetotransport property associated with chiral anomaly in four dimensional chiral anomalous systems, which refers to the transport behavior that the DC longitudinal magnetoresistivity decreases with increasing magnetic field. We calculate the longitudinal magnetoconductivity in the presence of backreactions of the magnetic field to gravity in holographic zero charge and axial charge density systems with and without axial charge dissipation. In the absence of axial charge dissipation, we find that the quantum critical conductivity grows with increasing magnetic field when the backreaction strength is larger than a critical value, in contrast to the monotonically decreasing behavior of quantum critical conductivity in the probe limit. With axial charge dissipation, we find the negative magnetoresistivity behavior. The DC longitudinal magnetoconductivity scales as $B$ in the large magnetic field limit, which deviates from the exact $B^2$ scaling of the probe limit resul...

  10. Molecular anisotropic magnetoresistance

    Science.gov (United States)

    Otte, Fabian; Heinze, Stefan; Mokrousov, Yuriy

    2015-12-01

    Using density functional theory calculations, we demonstrate that the effect of anisotropic magnetoresistance (AMR) can be enhanced by orders of magnitude with respect to conventional bulk ferromagnets in junctions containing molecules sandwiched between ferromagnetic leads. We study ballistic transport in metal-benzene complexes contacted by 3 d transition-metal wires. We show that a gigantic AMR can arise from spin-orbit coupling effects in the leads, drastically enhanced by orbital-symmetry filtering properties of the molecules. We further discuss how this molecular anisotropic magnetoresistance (MAMR) can be tuned by the proper choice of materials and their electronic properties.

  11. Hormonal responses to meta-chlorophenylpiperazine (m-CPP) are undiminished by acute m-CPP pretreatment.

    Science.gov (United States)

    Coccaro, E F; Kavoussi, R J; Trestman, R L; Gabriel, S M; Cooper, T B; Siever, L J

    1996-05-17

    Two challenges with meta-chlorophenylpiperazine (m-CPP, 0.5 mg/kg, p.o.) were performed in healthy volunteers to test the short-term stability of hormonal responses. Challenges were performed in an identical fashion and were conducted on sequential days. Circulating m-CPP plasma levels, as well as prolactin and cortisol responses to m-CPP, were correspondingly similar in magnitude on the 2 days. These data suggest that both prolactin and cortisol responses to single oral administrations of m-CPP are stable over at least a 24-h period.

  12. Anisotropic magnetoresistance and current-perpendicular-to-plane giant magnetoresistance in epitaxial NiMnSb-based multilayers

    Energy Technology Data Exchange (ETDEWEB)

    Kwon, B.; Sakuraba, Y., E-mail: Yuya.Sakuraba@nims.go.jp; Sukegawa, H.; Li, S.; Furubayashi, T. [National Institute for Materials Science (NIMS), 1-2-1, Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Qu, G.; Hono, K. [National Institute for Materials Science (NIMS), 1-2-1, Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Graduate School Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8571 (Japan)

    2016-01-14

    We fabricated (001)-oriented C1{sub b}-NiMnSb epitaxial films on MgO substrate by a magnetron sputtering system and systematically investigated the structure, magnetic property, and anisotropic magnetoresistance (AMR) effect. NiMnSb film was deposited using a stoichiometric NiMnSb target which has Mn-deficient (Mn ∼ 28.7 at. %) off-stoichiometric composition ratio. We have investigated bulk spin-polarization in NiMnSb films by measuring AMR on the basis of recent study for half-metallic L2{sub 1}-Heusler compounds. Although the negative sign of AMR ratio, which is indicative of half-metallic nature, was observed in the single layer NiMnSb films, the magnitude of AMR ratio (−0.10% at RT) was about half of the largest value reported for half-metallic L2{sub 1}-Heusler compounds. The current-perpendicular-to-plane (CPP) giant magnetoresistance (GMR) devices of NiMnSb/Ag/NiMnSb show MR ratio of 13.2% at 10 K and 4.2% at 300 K, which is higher than the previous result for NiMnSb/Cu/NiMnSb CPP-GMR devices [Caballero et al., J. Magn. Magn. Mater. 198–199, 55 (1999)], but much less than the CPP-GMR using L2{sub 1}-Heusler electrodes. The reduction of intrinsic bulk spin-polarization originating from the Mn-deficiency in NiMnSb layer is expected to be the main reason for small MR values.

  13. Methylone and mCPP, two new drugs of abuse?

    Science.gov (United States)

    Bossong, M G; Van Dijk, J P; Niesink, R J M

    2005-12-01

    Recently, two new ecstasy-like substances, methylone and mCPP, were found in street drugs in the Netherlands by the Drugs Information and Monitoring System (DIMS). Methylone (3,4-methylenedioxymethcathinone) is the main ingredient of a new liquid designer drug that appeared on the Dutch drug market, called 'Explosion'. mCPP (meta-chlorophenylpiperazine) is a substance often used as a probe for the serotonin function in psychiatric research, and has now been found in street drugs, both in tablets and powders. Methylone as well as mCPP act on monoaminergic systems, resembling MDMA (3,4-methylenedioxymethamphetamine), with mCPP mainly affecting the serotonin system. The subjective effects of both new substances exhibit subtle differences with those of MDMA. Only little is known about the harmfulness of both methylone and mCPP. However, because of similarities between these substances and MDMA, risks common to MDMA cannot be excluded.

  14. Microscopic origin of magnetoresistance

    Directory of Open Access Journals (Sweden)

    Christian Heiliger

    2006-11-01

    Full Text Available Tunneling magnetoresistance is one of the basic effects of spintronics with the potential for applications in sensors and IT, where the spin degree of freedom of electrons is exploited. Successful application requires control of the materials and processes involved on the atomic scale. To support experimental developments, predict new materials, and optimize the effect, first-principle electronic structure calculations based on density functional theory are the most powerful tool. The method gives an insight into the microscopic origin of spin-dependent tunneling. The main components of a planar tunnel junction – barrier, leads, and their interface – and their specific role for tunneling magnetoresistance are discussed for one of the standard systems, Fe/MgO/Fe.

  15. Magnetoresistive emulsion analyzer.

    Science.gov (United States)

    Lin, Gungun; Baraban, Larysa; Han, Luyang; Karnaushenko, Daniil; Makarov, Denys; Cuniberti, Gianaurelio; Schmidt, Oliver G

    2013-01-01

    We realize a magnetoresistive emulsion analyzer capable of detection, multiparametric analysis and sorting of ferrofluid-containing nanoliter-droplets. The operation of the device in a cytometric mode provides high throughput and quantitative information about the dimensions and magnetic content of the emulsion. Our method offers important complementarity to conventional optical approaches involving ferrofluids, and paves the way to the development of novel compact tools for diagnostics and nanomedicine including drug design and screening.

  16. Does meta-chlorophenylpiperazine (mCPP) activate human platelets?

    Science.gov (United States)

    Frampton, A E; Andrews, J C H; Parfitt, A; Jagroop, I A; Mikhailidis, D P; Henry, J A

    2006-02-01

    mCPP (meta-chlorophenylpiperazine), an agonist at serotonin (5-hydroxytryptamine, 5-HT) 5-HT2 receptors, has been used as a probe of serotonergic function. We assessed its effect on platelet activation by measuring median platelet volume (MPV), the Sonoclot (SCT) pattern and plasma and intraplatelet serotonin. (a) In vitro study: MPV was measured (n = 7) using a high-resolution channelyzer: Saline (median and range (5.23 fl; 5.10-6.18) vs. mCPP (5.36; 5.10-6.44) P = 0.03; ADP (5.42; 5.29-6.44) vs. ADP + mCPP (5.67; 5.42-6.63) P = 0.02; mCPP (5.36; 5.10-6.44) vs. ADP + mCPP (5.67; 5.42-6.63) P = 0.02. Therefore, mCPP increases the MPV and enhances the effect of ADP. (b) In vivo study: The SCT time to inflection (TI) and time to peak (TP) were measured following the oral administration of mCPP (0.5 mg/kg) or aspirin (300 mg) (n = 10). Ingestion of mCPP significantly shortened TI and TP indicating platelet activation. TI: 0 h (mean +/- SD: 10.2 +/- 2.0 min) vs. 6 h (9.3 +/- 1.5) P = 0.03; TP: 0 h (31.9 +/- 7.6) vs. 6 h (23.1 +/- 2.9) P = 0.01. Aspirin had no effect on TI or TP. There were no significant changes in plasma and intraplatelet 5-HT. It is concluded that mCPP activates human platelets via 5-HT receptors.

  17. Current-Perpendicular-to-Plane Magnetoresistance in Chemical Vapor Deposition-Grown Multilayer Graphene

    Directory of Open Access Journals (Sweden)

    Sandipan Pramanik

    2013-09-01

    Full Text Available Current-perpendicular-to-plane (CPP magnetoresistance (MR effects are often exploited in various state-of-the-art magnetic field sensing and data storage technologies. Most of the CPP-MR devices are artificial layered structures of ferromagnets and non-magnets, and in these devices, MR manifests, due to spin-dependent carrier transmission through the constituent layers. In this work, we explore another class of artificial layered structure in which multilayer graphene (MLG is grown on a metallic substrate by chemical vapor deposition (CVD. We show that depending on the nature of the graphene-metal interaction, these devices can also exhibit large CPP-MR. Magnetoresistance ratios (>100% are at least two orders of magnitude higher than “transferred” graphene and graphitic samples reported in the literature, for a comparable temperature and magnetic field range. This effect is unrelated to spin injection and transport and is not adequately described by any of the MR mechanisms known to date. The simple fabrication process, large magnitude of the MR and its persistence at room temperature make this system an attractive candidate for magnetic field sensing and data storage applications and, also, underscore the need for further fundamental investigations on graphene-metal interactions.

  18. CPP-ACP and CPP-ACFP versus fluoride varnish in remineralisation of early caries lesions. A prospective study.

    Science.gov (United States)

    Llena, C; Leyda, A M; Forner, L

    2015-09-01

    To evaluate the effects of novel casein phosphopeptide (CPP) formulations CPP-amorphous calcium phosphate (CCP- ACP) and CPP-amorphous calcium fluoride phosphate (CPP-ACFP) versus fluoride varnish on the remineralisation of enamel white spot lesions (WSLs) over a 12-week follow-up period. Double-blind prospective study. Eligibility criteria were patients between 6 and 14 years old and have WSLs on their permanent teeth. We evaluated 786 WSLs. Participants were divided randomly into three groups. Groups A and B were instructed to daily topical application of GC Tooth Mouse (CPP-ACP) or Mi Paste Plus (CPP-ACFP), Group C received a monthly professional application of Duraphat fluoride varnish. WSLs were categorised according to the International Caries Detection and Assessment System (ICDAS II; grades 0-3) and assessed by laser fluorescence (DIAGNOdent) at baseline and at 4, 8 and 12 weeks. Changes in mineralisation before and after treatment were analysed using two-way analysis of variance, with post hoc Bonferroni's non-parametric tests for multiple comparisons. DIAGNOdent values were significantly reduced in Group B at 4 weeks, and in Groups A and C at 8 weeks. Mean values in Group B were lower than in Groups A and C at 4 weeks, and lower than Group C at 8 weeks. CPP-ACFP appeared to have a specific effect on smooth-surface caries, but no significant effect on caries in pits and fissures. At 4 weeks, CPP-ACFP is superior to fluoride varnish at remineralising smooth-surface WSLs. CPP-ACP is not superior to fluoride varnish by any of the measures studied.

  19. Market Status Quo and Production Technology of CPP Film in China

    Institute of Scientific and Technical Information of China (English)

    CHEN Ying

    2004-01-01

    @@ 1 Production capacity and annual demand of CPP 1.1 Situation of production and market of CPP The production of CPP originated from the eighties of the twenty-century in China. With 20 years' development, now there are more than 30 CPP processors withover 50 lines and capacity of about 200 kt/year.

  20. Anomalous magnetoresistance in Fibonacci multilayers.

    Energy Technology Data Exchange (ETDEWEB)

    Machado, L. D.; Bezerra, C. G.; Correa, M. A.; Chesman, C.; Pearson, J. E.; Hoffmann, A. (Materials Science Division); (Universidade Federal do Rio Grande do Norte)

    2012-01-01

    We theoretically investigated magnetoresistance curves in quasiperiodic magnetic multilayers for two different growth directions, namely, [110] and [100]. We considered identical ferromagnetic layers separated by nonmagnetic layers with two different thicknesses chosen based on the Fibonacci sequence. Using parameters for Fe/Cr multilayers, four terms were included in our description of the magnetic energy: Zeeman, cubic anisotropy, bilinear coupling, and biquadratic coupling. The minimum energy was determined by the gradient method and the equilibrium magnetization directions found were used to calculate magnetoresistance curves. By choosing spacers with a thickness such that biquadratic coupling is stronger than bilinear coupling, unusual behaviors for the magnetoresistance were observed: (i) for the [110] case, there is a different behavior for structures based on even and odd Fibonacci generations, and, more interesting, (ii) for the [100] case, we found magnetic field ranges for which the magnetoresistance increases with magnetic field.

  1. Realization of high quality epitaxial current- perpendicular-to-plane giant magnetoresistive pseudo spin-valves on Si(001 wafer using NiAl buffer layer

    Directory of Open Access Journals (Sweden)

    Jiamin Chen

    2016-05-01

    Full Text Available In this letter, we report a NiAl buffer layer as a template for the integration of epitaxial current-perpendicular-plane-giant magnetoresistive (CPP-GMR devices on a Si(001 single crystalline substrate. By depositing NiAl on a Si wafer at an elevated temperature of 500 °C, a smooth and epitaxial B2-type NiAl(001 layer was obtained. The surface roughness was further improved by depositing Ag on the NiAl layer and applying subsequent annealing process. The epitaxial CPP-GMR devices grown on the buffered Si(001 substrate present a large magnetoresistive output comparable with that of the devices grown on an MgO(001 substrate, demonstrating the possibility of epitaxial spintronic devices with a NiAl templated Si wafer for practical applications.

  2. Methylone and mCPP, two new drugs of abuse?

    NARCIS (Netherlands)

    Bossong, MG; Van Dijk, JP; Niesink, RJM

    2005-01-01

    Recently, two new ecstasy-like substances, methylone and mCPP, were found in street drugs in the Netherlands by the Drugs Information and Monitoring System (DIMS). Methylone (3,4-methylenedioxymethcathinone) is the main ingredient of a new liquid designer drug that appeared on the Dutch drug market,

  3. Tunneling magnetoresistance in Si nanowires

    Science.gov (United States)

    Montes, E.; Rungger, I.; Sanvito, S.; Schwingenschlögl, U.

    2016-11-01

    We investigate the tunneling magnetoresistance of small diameter semiconducting Si nanowires attached to ferromagnetic Fe electrodes, using first principles density functional theory combined with the non-equilibrium Green’s functions method for quantum transport. Silicon nanowires represent an interesting platform for spin devices. They are compatible with mature silicon technology and their intrinsic electronic properties can be controlled by modifying the diameter and length. Here we systematically study the spin transport properties for neutral nanowires and both n and p doping conditions. We find a substantial low bias magnetoresistance for the neutral case, which halves for an applied voltage of about 0.35 V and persists up to 1 V. Doping in general decreases the magnetoresistance, as soon as the conductance is no longer dominated by tunneling.

  4. Tunneling magnetoresistance in Si nanowires

    KAUST Repository

    Montes Muñoz, Enrique

    2016-11-09

    We investigate the tunneling magnetoresistance of small diameter semiconducting Si nanowires attached to ferromagnetic Fe electrodes, using first principles density functional theory combined with the non-equilibrium Green\\'s functions method for quantum transport. Silicon nanowires represent an interesting platform for spin devices. They are compatible with mature silicon technology and their intrinsic electronic properties can be controlled by modifying the diameter and length. Here we systematically study the spin transport properties for neutral nanowires and both n and p doping conditions. We find a substantial low bias magnetoresistance for the neutral case, which halves for an applied voltage of about 0.35 V and persists up to 1 V. Doping in general decreases the magnetoresistance, as soon as the conductance is no longer dominated by tunneling.

  5. Magnetoresistance stories of double perovskites

    Indian Academy of Sciences (India)

    Abhishek Nag; Sugata Ray

    2015-06-01

    Tunnelling magnetoresistance (TMR) in polycrystalline double perovskites has been an important research topic for more than a decade now, where the nature of the insulating tunnel barrier is the core issue of debate. Other than the nonmagnetic grain boundaries as conventional tunnel barriers, intragrain magnetic antiphase boundaries (APB) as well as magnetically frustrated grain surfaces have also been proposed to act as tunnel barriers in Sr2FeMoO6. In this review, the present state of the debate has been discussed briefly and how the physical state of the material can affect the magnetoresistance signal of double perovskites in many different ways has been pointed out.

  6. Bipolaron Mechanism for Organic Magnetoresistance

    Science.gov (United States)

    Bobbert, P. A.; Nguyen, T. D.; van Oost, F. W. A.; Koopmans, B.; Wohlgenannt, M.

    2007-11-01

    We present a mechanism for the recently discovered magnetoresistance in disordered π-conjugated materials, based on hopping of polarons and bipolaron formation, in the presence of the random hyperfine fields of the hydrogen nuclei and an external magnetic field. Within a simple model we describe the magnetic field dependence of the bipolaron density. Monte Carlo simulations including on-site and longer-range Coulomb repulsion show how this leads to positive and negative magnetoresistance. Depending on the branching ratio between bipolaron formation or dissociation and hopping rates, two different line shapes in excellent agreement with experiment are obtained.

  7. INTEC CPP-603 Basin Water Treatment System Closure: Process Design

    Energy Technology Data Exchange (ETDEWEB)

    Kimmitt, Raymond Rodney; Faultersack, Wendell Gale; Foster, Jonathan Kay; Berry, Stephen Michael

    2002-09-01

    This document describes the engineering activities that have been completed in support of the closure plan for the Idaho Nuclear Technology and Engineering Center (INTEC) CPP-603 Basin Water Treatment System. This effort includes detailed assessments of methods and equipment for performing work in four areas: 1. A cold (nonradioactive) mockup system for testing equipment and procedures for vessel cleanout and vessel demolition. 2. Cleanout of process vessels to meet standards identified in the closure plan. 3. Dismantlement and removal of vessels, should it not be possible to clean them to required standards in the closure plan. 4. Cleanout or removal of pipelines and pumps associated with the CPP-603 basin water treatment system. Cleanout standards for the pipes will be the same as those used for the process vessels.

  8. Enhanced Magnetoresistance in Nanocrystalline Magnetite

    OpenAIRE

    Venkatesan, M; Nawka, S.; Pillai, Suresh; Coey, JM D

    2003-01-01

    The magnetic and magnetotransport properties of nanoparticulate magnetite with different grainsizes are investigated using x-ray diffraction, microscopy, magnetometry, and magnetoresistancemeasurements. The magnetization varies significantly with grain size and is sensitive to preparation conditions. The reduction in saturation magnetization in coprecipitated particles is probably due to the surface spin disorder. Magnetoresistance of pressed powder compacts is significantly enhancedin materi...

  9. Anisotropic magnetoresistance effect field sensors

    CERN Document Server

    Hauser, H; Stangl, G; Chabicovsky, R; Janiba, M; Riedling, K

    2000-01-01

    The parameters of the sensor layout and sensitivity considerations are discussed. The anisotropic magnetoresistive effect of DC-sputtered Ni 81%-Fe 19% films has been increased up to DELTA rho/rho=3.93% at 50 nm thickness and a sensitivity of 500 mu V/mu T can be achieved by an elliptically shaped sensor layout.

  10. Laboratory Evaluation of Underwater Grouting of CPP-603 Basins

    Energy Technology Data Exchange (ETDEWEB)

    Johnson, V.J.; Pao, J.H.; Demmer, R.L.; Tripp, J.L.

    2002-01-17

    A project is underway to deactivate a Fuel Storage Basin. The project specifies the requirements and identifies the tasks that will be performed for deactivation of the CPP- 603 building at the Idaho Nuclear Technology and Engineering Center of the Idaho National Engineering and Environmental Laboratory. The Fuel Receiving and Storage Building (CPP- 603) was originally used to receive and store spent nuclear fuel from various facilities. The area to undergo deactivation includes the three spent nuclear fuel storage basins and a transfer canal (1.5 million gallons of water storage). Deactivation operations at the task site include management of the hot storage boxes and generic fuel objects, removal of the fuel storage racks, basin sludge, water evaporation and basin grouting, and interior equipment, tanks, and associated components. This includes a study to develop a grout formulation and placement process for this deactivation project. Water will be allowed to passively evaporate to r educe the spread of contamination from the walls of the basin. The basins will be filled with grout, underwater, as the water evaporates to maintain the basin water at a safe level. The objective of the deactivation project is to eliminate potential exposure to hazardous and radioactive materials and eliminate potential safety hazards associated with the CPP-603 building.

  11. Laboratory Evaluation of Underwater Grouting of CPP-603 Basins

    Energy Technology Data Exchange (ETDEWEB)

    Johnson, Virgil James; Pao, Jenn Hai; Demmer, Ricky Lynn; Tripp, Julia Lynn

    2002-02-01

    A project is underway to deactivate a Fuel Storage Basin. The project specifies the requirements and identifies the tasks that will be performed for deactivation of the CPP- 603 building at the Idaho Nuclear Technology and Engineering Center of the Idaho National Engineering and Environmental Laboratory. The Fuel Receiving and Storage Building (CPP- 603) was originally used to receive and store spent nuclear fuel from various facilities. The area to undergo deactivation includes the three spent nuclear fuel storage basins and a transfer canal (1.5 million gallons of water storage). Deactivation operations at the task site include management of the hot storage boxes and generic fuel objects, removal of the fuel storage racks, basin sludge, water evaporation and basin grouting, and interior equipment, tanks, and associated components. This includes a study to develop a grout formulation and placement process for this deactivation project. Water will be allowed to passively evaporate to reduce the spread of contamination from the walls of the basin. The basins will be filled with grout, underwater, as the water evaporates to maintain the basin water at a safe level. The objective of the deactivation project is to eliminate potential exposure to hazardous and radioactive materials and eliminate potential safety hazards associated with the CPP-603 building.

  12. Efficacy of CPP-ACP and CPP-ACPF on enamel remineralization - An in vitro study using scanning electron microscope and DIAGNOdent®

    Directory of Open Access Journals (Sweden)

    Jayanth Jayarajan

    2011-01-01

    Full Text Available Introduction: Remineralization as a treatment procedure has received a lot of attention both from clinicians as well researchers. The objective of this in vitro study was to find out the efficacy of casein phosphopeptide-amorphous calcium phosphate (CPP-ACP and casein phosphopeptide-amorphous calcium phosphate fluoride (CPP-ACPF in remineralizing enamel surface on which artificial caries lesion had been created. The changes were analyzed using DIAGNOdent® (KaVo and scanning electron microscope (SEM. Materials and Methods: Ninety maxillary premolars were selected and divided into three groups of 30 teeth each: A (artificial saliva, B (CPP-ACP, and C (CPP-ACPF. All the samples were assessed using DIAGNOdent® at the baseline and after demineralization and remineralization. Three samples were randomly selected from each group after remineralization for surface evaluation using SEM. Results: Statistical analysis showed that group B {CPP-ACP (4.1±1.8} and group C {CPP-ACPF (4.8±1.2} had a significantly higher amount of remineralization than group A (1.7±0.7. Conclusion: All the three groups showed a statistically significant amount of remineralization. However, because of the added benefit of fluoride (NaF 0.2%, CPP-ACPF (Tooth Mousse-Plus® showed marginally more amount of remineralization than CPP-ACP (Tooth Mousse®.

  13. Cannabinoid CB1 receptors of the dorsal hippocampus are important for induction of conditioned place preference (CPP) but do not change morphine CPP.

    Science.gov (United States)

    Zarrindast, Mohammad-Reza; Nouri, Maryam; Ahmadi, Shamseddin

    2007-08-13

    Interactions between cannabinoid and opioid systems have been reported in many studies. In the present study, we have investigated influence of cannabinoid CB1 receptor mechanism on the acquisition of conditioned place preference (CPP) induced by morphine in male Wistar rats. The cannabinoid CB1 receptor agonist (WIN55,212-2) and antagonist (AM251) were injected bilaterally into the dorsal hippocampus. Morphine and naloxone were injected subcutaneously (s.c.). The conditioning treatments with injections of morphine (6 and 9 mg/kg) induced a CPP for the drug-associated place. When administered into the dorsal hippocampus, WIN55,212-2 (1 microg/rat) induced CPP, but significantly did not alter CPP induced by a sub-effective dose of morphine (3 mg/kg). Moreover, administration of different doses of AM251 (50 and 100 ng/rat) into the dorsal hippocampus induced CPP, while did not change CPP by the sub-effective dose of morphine. Naloxone alone (1 mg/kg) induced conditioned place aversion (CPA). The drug (0.5 and 1 mg/kg) also caused CPA when co-administered with WIN55,212-2 (1 microg/rat). These results suggest that endocannabinoid system in the dorsal hippocampus is important for the CPP paradigm. However, agents did not alter morphine-induced CPP.

  14. Magnetoresistive sensors for string instruments

    Science.gov (United States)

    Lenssen, K.-M. H.; Somers, G. H. J.; van Zon, J. B. A. D.

    2002-05-01

    Pickup elements for string instruments, in particular for electric guitars, represent a new application area for magnetoresistive sensors. Recently we developed a sensor configuration with permanent magnets for this purpose. For the first experiments we used commercial anisotropic magnetoresistance sensors (Philips KMZ10) mounted on small ferrite bias magnets. Recently we equipped an electric guitar with prototypes comprising giant magnetoresistance (GMR) sensors. These prototype MR pickup elements showed several clear advantages compared to the presently commonly used inductive pickup units. They are much less sensitive to disturbing electromagnetic fields (>1000×at 5 kHz), mainly because their active sensor area is several orders of magnitude smaller (a few mm2 instead of cm2). Also the larger freedom in the choice of the permanent magnets (due to the larger sensitivity of the GMR elements) is advantageous: employing smaller magnets reduces the damping and thus significantly improves the sustain, the magnets can be less expensive and more stable magnet materials can be chosen so that aging effects are eliminated.

  15. The interaction of clozapine with the meta-chlorophenylpiperazine (mCPP) discriminative stimulus.

    Science.gov (United States)

    Fiorella, D; Rabin, R A; Winter, J C

    1996-01-01

    The psychotropic effects of the 5-HT2C agonist mCPP in human subjects are blocked by the atypical antipsychotic clozapine, but not by typical antipsychotics. An understanding of the mechanistic basis for the interaction of clozapine and mCPP would provide further insight into the basis for its unique therapeutic effects in humans. Drug-induced stimulus control provides an animal model for the subjective effects of psychotropic agents in humans. In the present study, the interaction of the atypical antipsychotic clozapine and the typical antipsychotic fluphenazine with the mCPP-stimulus were defined. Neither drug antagonized the stimulus effects of mCPP in vivo. In contrast, clozapine fully antagonized the mCPP-stimulated phosphoinositide turnover at the 5-HT2C receptor in vitro. The present data indicate that the paradigm of mCPP-induced stimulus control does not facilitate the differentiation of atypical and typical antipsychotic activities.

  16. CPP-Assisted Intracellular Drug Delivery, What Is Next?

    Directory of Open Access Journals (Sweden)

    Junxiao Ye

    2016-11-01

    Full Text Available For the past 20 years, we have witnessed an unprecedented and, indeed, rather miraculous event of how cell-penetrating peptides (CPPs, the naturally originated penetrating enhancers, help overcome the membrane barrier that has hindered the access of bio-macromolecular compounds such as genes and proteins into cells, thereby denying their clinical potential to become potent anti-cancer drugs. By taking the advantage of the unique cell-translocation property of these short peptides, various payloads of proteins, nucleic acids, or even nanoparticle-based carriers were delivered into all cell types with unparalleled efficiency. However, non-specific CPP-mediated cell penetration into normal tissues can lead to widespread organ distribution of the payloads, thereby reducing the therapeutic efficacy of the drug and at the same time increasing the drug-induced toxic effects. In view of these challenges, we present herein a review of the new designs of CPP-linked vehicles and strategies to achieve highly effective yet less toxic chemotherapy in combating tumor oncology.

  17. Quantum criticality and DBI magneto-resistance

    Science.gov (United States)

    Kiritsis, Elias; Li, Li

    2017-03-01

    We use the DBI action from string theory and holography to study the magneto-resistance at quantum criticality with hyperscaling violation. We find and analyze a rich class of scaling behaviors for the magneto-resistance. A special case describes the scaling results found in pnictides by Hayers et al in 2014 (arXiv:1412.6484).

  18. Rashba-Edelstein Magnetoresistance in Metallic Heterostructures

    Science.gov (United States)

    Nakayama, Hiroyasu; Kanno, Yusuke; An, Hongyu; Tashiro, Takaharu; Haku, Satoshi; Nomura, Akiyo; Ando, Kazuya

    2016-09-01

    We report the observation of magnetoresistance originating from Rashba spin-orbit coupling (SOC) in a metallic heterostructure: the Rashba-Edelstein (RE) magnetoresistance. We show that the simultaneous action of the direct and inverse RE effects in a Bi /Ag /CoFeB trilayer couples current-induced spin accumulation to the electric resistance. The electric resistance changes with the magnetic-field angle, reminiscent of the spin Hall magnetoresistance, despite the fact that bulk SOC is not responsible for the magnetoresistance. We further found that, even when the magnetization is saturated, the resistance increases with increasing the magnetic-field strength, which is attributed to the Hanle magnetoresistance in this system.

  19. Giant magneto-resistance devices

    CERN Document Server

    Hirota, Eiichi; Inomata, Koichiro

    2002-01-01

    This book deals with the application of giant magneto-resistance (GMR) effects to electronic devices. It will appeal to engineers and graduate students in the fields of electronic devices and materials. The main subjects are magnetic sensors with high resolution and magnetic read heads with high sensitivity, required for hard-disk drives with recording densities of several gigabytes. Another important subject is novel magnetic random-access memories (MRAM) with non-volatile non-destructive and radiation-resistant characteristics. Other topics include future GMR devices based on bipolar spin transistors, spin field-effect transistors (FETs) and double-tunnel junctions.

  20. Route towards huge magnetoresistance in doped polymers

    Science.gov (United States)

    Kersten, S. P.; Meskers, S. C. J.; Bobbert, P. A.

    2012-07-01

    Room-temperature magnetoresistance of the order of 10% has been observed in organic semiconductors. We predict that even larger magnetoresistance can be realized in suitably synthesized doped conjugated polymers. In such polymers, ionization of dopants creates free charges that recombine with a rate governed by a competition between an applied magnetic field and random hyperfine fields. This leads to a spin-blocking effect that depends on the magnetic field. We show that the combined effects of spin blocking and charge blocking, the fact that two free charges cannot occupy the same site, lead to a magnetoresistance of almost two orders of magnitude. This magnetoresistance occurs even at vanishing electric field and is therefore a quasiequilibrium effect. The influences of the dopant strength, energetic disorder, and interchain hopping are investigated. We find that the dopant strength and energetic disorder have only little influence on the magnetoresistance. Interchain hopping strongly decreases the magnetoresistance because it can lift spin-blocking and charge-blocking configurations that occur in strictly one-dimensional transport. We provide suggestions for realization of polymers that should show this magnetoresistance.

  1. Tunneling magnetoresistance of silicon chains

    Science.gov (United States)

    Matsuura, Yukihito

    2016-05-01

    The tunneling magnetoresistance (TMR) of a silicon chain sandwiched between nickel electrodes was examined by using first-principles density functional theory. The relative orientation of the magnetization in a parallel-alignment (PA) configuration of two nickel electrodes enhanced the current with a bias less than 0.4 V compared with that in an antiparallel-alignment configuration. Consequently, the silicon chain-nickel electrodes yielded good TMR characteristics. In addition, there was polarized spin current in the PA configuration. The spin polarization of sulfur atoms functioning as a linking bridge between the chain and nickel electrode played an important role in the magnetic effects of the electric current. Moreover, the hybridization of the sulfur 3p orbital and σ-conjugated silicon 3p orbital contributed to increasing the total current.

  2. Interface of magnetoresistive converter of active power

    Directory of Open Access Journals (Sweden)

    A. I. Vytiaganets

    2009-10-01

    Full Text Available The vehicle and programmatic interfaces of magnetoresistive converter of active power are considered, the results of statistical treatment of the multiple measuring of active-power are analysed.

  3. Large rectification magnetoresistance in nonmagnetic Al/Ge/Al heterojunctions.

    Science.gov (United States)

    Zhang, Kun; Li, Huan-Huan; Grünberg, Peter; Li, Qiang; Ye, Sheng-Tao; Tian, Yu-Feng; Yan, Shi-Shen; Lin, Zhao-Jun; Kang, Shi-Shou; Chen, Yan-Xue; Liu, Guo-Lei; Mei, Liang-Mo

    2015-09-21

    Magnetoresistance and rectification are two fundamental physical properties of heterojunctions and respectively have wide applications in spintronics devices. Being different from the well known various magnetoresistance effects, here we report a brand new large magnetoresistance that can be regarded as rectification magnetoresistance: the application of a pure small sinusoidal alternating-current to the nonmagnetic Al/Ge Schottky heterojunctions can generate a significant direct-current voltage, and this rectification voltage strongly varies with the external magnetic field. We find that the rectification magnetoresistance in Al/Ge Schottky heterojunctions is as large as 250% at room temperature, which is greatly enhanced as compared with the conventional magnetoresistance of 70%. The findings of rectification magnetoresistance open the way to the new nonmagnetic Ge-based spintronics devices of large rectification magnetoresistance at ambient temperature under the alternating-current due to the simultaneous implementation of the rectification and magnetoresistance in the same devices.

  4. ETA chemistry experience and assessment on CPP in Korea

    Energy Technology Data Exchange (ETDEWEB)

    Park, K.K.; Lee, J.B.; Yoon, S.W. [Korea Electric Power Research Inst., Taejon (Korea, Republic of)

    2002-07-01

    To reduce FAC of carbon steel in secondary system, water treatment chemistry was converted to ETA at Kori unit 1. Full scale tests to choose the optimum concentration of ETA were conducted and the evaluation after one cycle operation with ETA was also performed. Optimum concentration of ETA in final feed water was determined as 1.8 ppm. At this condition, iron concentration was reduced by 69.8% in final feed water and 69.7% in heater drain compared to ammonia-AVT. The amount of sludge removed from each steam generator was 11.3 kg, which was 88.2% lower than that of ammonia-AVT. With successful results of Kori unit 1, Applications of ETA were extended to other PWRs. Iron transport was found to be reduced significantly. Also, the output of electric power increased by 9 MWe at Young-Kwang unit 1. However, fouling of ion exchange resin in CPP was appeared. ETA appears to have a solvent function in the initial stage of ETA chemistry. Resin was restored when the fouling was removed with hot water and sodium bicarbonates. In particular, the MR type anion resin may be effective in resistance to fouling when ETA-chemistry is used. (authors)

  5. Chronic treatment with meta-chlorophenylpiperazine (m-CPP) alters behavioral and cerebral metabolic responses to the serotonin agonists m-CPP and quipazine but not 8-hydroxy-2(di-N-propylamino)tetralin.

    Science.gov (United States)

    Freo, U; Holloway, H W; Greig, N H; Soncrant, T T

    1992-01-01

    The effects of the serotonin (5-HT) agonists meta-chlorophenylpiperazine (m-CPP), quipazine and 8-hydroxy-2(di-n-propylamino)tetralin (DPAT) on behavior and on regional cerebral metabolic rates for glucose (rCMRglc) were measured in control rats or in rats pretreated for 2 weeks with continuous infusion of saline or m-CPP (2.5 mg/kg/day, subcutaneously). rCMRglc was measured in 71 brain regions, using the quantitative autoradiographic [14C]2-deoxy-D-glucose technique, at 15 min after acute administration of m-CPP 2.5 mg/kg, 60 min after quipazine 20 mg/kg, or 10 min after DPAT 1 mg/kg. Behavioral effects were assessed for m-CPP with an activity monitor, for quipazine by counting head shakes and for DPAT by scoring the serotonin syndrome. Chronic m-CPP pretreatment produced tolerance to hypolocomotion induced by acute m-CPP and to head shakes caused by acute quipazine, but did not alter the serotonin syndrome produced by DPAT. m-CPP 2.5 mg/kg IP produced widespread rCMRglc reductions in control rats but failed to modify rCMRglc in any region after chronic m-CPP pretreatment. Quipazine increased rCMRglc in 4 regions in control rats, but reduced rCMRglc in 14 brain areas of chronically m-CPP-pretreated animals. DPAT altered rCMRglc to the same degree in control (25 regions affected) and in chronically m-CPP-pretreated rats (28 regions affected). Reduced behavioral and metabolic effects of acute m-CPP in chronically m-CPP-pretreated rats were not due to pharmacokinetic alterations. These results demonstrate that chronic administration of m-CPP produces behavioral and metabolic tolerance to acute administration of m-CPP, but not of DPAT.(ABSTRACT TRUNCATED AT 250 WORDS)

  6. Hypersensitivity to meta-chlorophenylpiperazine (mCPP) in migraine and drug withdrawal.

    Science.gov (United States)

    Kalkman, H O

    1997-01-01

    Administration of a bolus dose of mCPP, a 5-HT2C receptor agonist, to rats provokes endocrine and behavioural effects that are reminiscent of some of the symptoms of human depression. Rats exposed to chronic mild stress (which is also a key factor in the precipitation of human depression) were hypersensitive to mCPP, whilst chronic treatment with antidepressant serotonin re-uptake inhibitors suppressed the responsiveness to mCPP. Similarities also exist with respect to withdrawal reactions following chronic alcohol or benzodiazepine abuse. In humans, a bolus dose of mCPP can cause alcohol craving (in abstinent alcoholics) and migraine (in susceptible persons), suggesting that there is a 5-HT2C receptor hyperresponsiveness in these conditions also. It is hypothesized that chronic treatment with SSRI's can prevent migraine attacks and drug craving.

  7. Enhancement of current-perpendicular-to-plane giant magnetoresistance in Heusler-alloy based pseudo spin valves by using a CuZn spacer layer

    Energy Technology Data Exchange (ETDEWEB)

    Furubayashi, T., E-mail: furubayashi.takao@nims.go.jp; Takahashi, Y. K.; Sasaki, T. T.; Hono, K. [National Institute for Materials Science, Tsukuba 305-0047 (Japan)

    2015-10-28

    Enhancement of magnetoresistance output was attained in current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) devices by using a bcc CuZn alloy for the spacer. Pseudo spin valves that consisted of the Co{sub 2}Fe(Ga{sub 0.5}Ge{sub 0.5}) Heusler alloy for ferromagnetic layers and CuZn alloy with the composition of Cu{sub 52.4}Zn{sub 47.6} for a spacer showed the large change of the resistance-area products, ΔRA, up to 8 mΩ·μm{sup 2} for a low annealing temperature of 350 °C. The ΔRA value is one of the highest reported so far for the CPP-GMR devices for the low annealing temperature, which is essential for processing read heads for hard disk drives. We consider that the enhancement of ΔRA is produced from the spin-dependent resistance at the Co{sub 2}Fe(Ga{sub 0.5}Ge{sub 0.5})/CuZn interfaces.

  8. Monte Carlo calculations of the magnetoresistance in magnetic multilayer structures with giant magnetoresistance effects

    Science.gov (United States)

    Prudnikov, V. V.; Prudnikov, P. V.; Romanovskiy, D. E.

    2016-06-01

    A Monte Carlo study of trilayer and spin-valve magnetic structures with giant magnetoresistance effects is carried out. The anisotropic Heisenberg model is used for description of magnetic properties of ultrathin ferromagnetic films forming these structures. The temperature and magnetic field dependences of magnetic characteristics are considered for ferromagnetic and antiferromagnetic configurations of these multilayer structures. The methodology for determination of the magnetoresistance by the Monte Carlo method is introduced; this permits us to calculate the magnetoresistance of multilayer structures for different thicknesses of the ferromagnetic films. The calculated temperature dependence of the magnetoresistance agrees very well with the experimental results measured for the Fe(0 0 1)-Cr(0 0 1) multilayer structure and CFAS-Ag-CFAS-IrMn spin-valve structure based on the half-metallic Heusler alloy Co2FeAl0.5Si0.5.

  9. Large magnetoresistance in non-magnetic silver chalcogenides and new class of magnetoresistive compounds

    Science.gov (United States)

    Saboungi, Marie-Louis; Price, David C. L.; Rosenbaum, Thomas F.; Xu, Rong; Husmann, Anke

    2001-01-01

    The heavily-doped silver chalcogenides, Ag.sub.2+.delta. Se and Ag.sub.2+.delta. Te, show magnetoresistance effects on a scale comparable to the "colossal" magnetoresistance (CMR) compounds. Hall coefficient, magnetoconductivity, and hydrostatic pressure experiments establish that elements of narrow-gap semiconductor physics apply, but both the size of the effects at room temperature and the linear field dependence down to fields of a few Oersteds are surprising new features.

  10. Effect of CPP/ACP on Initial Bioadhesion to Enamel and Dentin In Situ

    Directory of Open Access Journals (Sweden)

    Susann Grychtol

    2014-01-01

    Full Text Available The present in situ study investigated the influence of a preparation containing CPP/ACP (caseinphosphopeptide-amorphous calcium phosphate (GC Tooth mousse on initial bacterial colonization of enamel and dentin. Therefore, pellicle formation was performed in situ on bovine enamel and dentin specimens fixed to individual upper jaw splints worn by 8 subjects. After 1 min of pellicle formation GC Tooth mousse was used according to manufacturer’s recommendations. Rinses with chlorhexidine served as positive controls. Specimens carried without any rinse served as negative controls. After 8 h overnight exposure of the splints, bacterial colonization was quantified by fluorescence microscopy (DAPI and BacLight live/dead staining. Additionally, the colony forming units (CFU were determined after desorption. Furthermore, the effects on Streptococcus mutans bacteria were tested in vitro (BacLight. There was no significant impact of CPP/ACP on initial bacterial colonization proved with DAPI and BacLight. Determination of CFU showed statistical significance for CPP/ACP to reduce bacterial adherence on enamel. The in vitro investigation indicated no antimicrobial effects for CPP/ACP on Streptococcus mutans suspension. Under the chosen conditions, CPP/ACP (GC Tooth mousse had no significant impact on initial biofilm formation on dental hard tissues. The tested preparation cannot be recommended for biofilm management.

  11. Cannabidiol reverses the mCPP-induced increase in marble-burying behavior.

    Science.gov (United States)

    Nardo, Mirella; Casarotto, Plinio C; Gomes, Felipe V; Guimarães, Francisco S

    2014-10-01

    Cannabidiol (CBD), one of the main components of Cannabis sp., presents clinical and preclinical anxiolytic properties. Recent results using the marble-burying test (MBT) suggest that CBD can also induce anticompulsive-like effects. Meta-chloro-phenyl-piperazine (mCPP) is a nonspecific serotonergic agonist (acting mainly at 5HT1A, 5HT2C and 5HT1D receptors) reported to increase symptoms in OCD patients and block the anticompulsive-like effect of serotonin reuptake inhibitors (SRIs) in animal models. The aim of this study was to investigate the interference of CBD on mCPP effects in repetitive burying. Administration of mCPP showed dual effects in the MBT, increasing the number of buried marbles at lower (0.1 mg/kg) while decreasing it at higher doses (1 mg/kg), an effect not related to a general increase in anxiety-like behavior. As found previously, CBD (30 mg/kg) and the positive control fluoxetine (FLX; 10 mg/kg) decreased burying behavior without changing general exploratory activity. A similar effect was found when subeffective doses of CBD (15 mg/kg) and FLX (3 mg/kg) were administered together. These subeffective doses alone were also able to block mCPP-induced repetitive burying. The results, in addition to reinforcing a possible anticompulsive effect of CBD, also suggest that mCPP-induced repetitive burying could be a useful test for the screening of compounds with presumed anticompulsive properties.

  12. A thin-film magnetoresistive angle detector

    NARCIS (Netherlands)

    Eijkel, Kees J.M.; Wieberdink, Johan W.; Fluitman, Jan H.J; Popma, Theo J.A.; Groot, Peter; Leeuwis, Henk

    1990-01-01

    An overview is given of the results of our research on a contactless angle detector based on the anisotropic magnetoresistance effect (AMR effect) in a permalloy thin film. The results of high-temperature annealing treatment of the pemalloy film are discussed. Such a treatment suppresses the effects

  13. Negative magnetoresistance slope in superconducting granular films

    Energy Technology Data Exchange (ETDEWEB)

    Shapiro, Boris Ya., E-mail: shapib@mail.biu.ac.il; Shapiro, Irina; Levi, Daniel; Shaulov, Avner; Yeshurun, Yosef

    2014-06-15

    Highlights: • The theory explaining recently observed negative magneto-resistance slope in ultra-thin YBa{sub 2}Cu{sub 2}O{sub 7−δ} films is developed. • Considering film as an array of the Josephson junctions, we solve the sine-Gordon equations including a viscosity term. • The solution yields a negative magneto-resistance slope setting in agreement with the experimental results. - Abstract: A phenomenological theory is developed to explain the recently observed negative magnetoresistance slope in ultra-thin granular YBa{sub 2}Cu{sub 2}O{sub 7−δ} films. Viewing this system as a two-dimensional array of extended Josephson junctions, we numerically solve the sine-Gordon equations including a viscosity term that increases linearly with the external field. The solution yields a negative magnetoresistance slope setting in at a field that is determined by the geometry and thus independent of temperature, in agreement with the experimental results.

  14. Thin-film magnetoresistive absolute position detector

    NARCIS (Netherlands)

    Groenland, Johannes Petrus Jacobus

    1990-01-01

    The subject of this thesis is the investigation of a digital absolute posi- tion-detection system, which is based on a position-information carrier (i.e. a magnetic tape) with one single code track on the one hand, and an array of magnetoresistive sensors for the detection of the informatio

  15. The effect of CPP-ACP paste on the surface hardness of glass ionomer cement when immersed in orange juice

    Science.gov (United States)

    Nadia, A. A.; Eriwati, Y. K.; Damiyanti, M.

    2017-08-01

    This study aims to identify the effect of CPP-ACP paste on the surface hardness of glass ionomer cement (GIC) when immersed in orange juice. Eighteen specimens of Fuji IX GIC were divided into three groups: no CPP-ACP added (group A); CPP-ACP applied for three minutes (group B); and CPP-ACP applied for 30 minutes (group C). Specimens were immersed in orange juice and tested for surface hardness using a Vickers hardness tester. Data were analyzed using the one-way ANOVA (p = juice consumption.

  16. CPP/PLLA COMPOSITES OF SCAFFOLDS FOR TISSUE ENGINEERING%CPP/PLLA软骨组织工程支架复合材料初步研究

    Institute of Scientific and Technical Information of China (English)

    石宗利; 王彦平; 戴刚; 李重庵

    2002-01-01

    采用溶媒投放、颗粒滤取技术制备出CPP/PLLA软骨组织工程支架复合材料,测试了该复合材料的物理力学性能和降解性能.研究结果表明,CPP/PLLA软骨组织工程支架复合材料具有高的孔隙率(90%)、良好的生物降解性能和物理力学性能,以及三维连通、微L、网状微观结构,故该复合材料有希望成为软骨组织工程支架材料之一.

  17. The effect of CPP-ACP containing fluoride on Streptococcus mutans adhesion and enamel roughness

    Directory of Open Access Journals (Sweden)

    Yulita Kristanti

    2013-12-01

    Full Text Available Background: Direct contact between the bleaching agent and the enamel surface results in demineralization, alteration in surface roughness and bacterial adhesion. Many studies try to minimize this side effect through different way. Purpose: The aim of this study was to determined the effect of Calcium Phospho Peptide-Amorphous Calcium Phosphate (CPP-ACP containing fluoride application before and after bleaching procedure on the adhesion of S. Mutans and enamel roughness. Methods: The samples were 6 teeth which were divided into 4 groups, and each tooth was cut into four pieces. Group A and C were treated with CPP-ACP after bleaching, while group B and D were treated with CPP-ACP before and after bleaching. CPP-ACP used in group C and D was the one that contain fluoride. After treatment, all samples were sterilized, immersed in steril human saliva for one hour, then immersed into S. mutans suspension of 108 CFU. Samples were incubated overnight. On the next day the samples were put into steril BHI and vortexed for one minute to detach the bacteria. Fifteen ml BHI containing bacteria was poured into TYS agar then incubated 37°Cfor 48 hours. Bacterial colony was counted with colony counter. The SEM examination was done on all samples. Results: Application of desensitizing agent reduced the S.mutans adhesion significantly among groups (p<0.05 except between group A and C. SEM evaluation revealed significant differences among groups. Conclusion: The application of CPP-ACP containing fluoride before and after bleaching was effective to reduce the accumulation of S.mutans colony and enamel roughness.Latar belakang: Kontak langsung antara bahan bleaching dan permukaan enamel menyebabkan demineralisasi, perubahan kekasaran permukaan dan berpengaruh terhadap banyaknya bakteri Streptococcus mutans (S. mutans yang melekat. Banyak peneliti mencoba meminimalkan efek samping ini dengan cara yang beragam. Tujuan: Penelitian ini bertujuan untuk meneliti efek

  18. Magnetoresistive system with concentric ferromagnetic asymmetric nanorings

    Energy Technology Data Exchange (ETDEWEB)

    Avila, J. I., E-mail: javila@ulg.ac.be; Tumelero, M. A.; Pasa, A. A.; Viegas, A. D. C. [Laboratório de Filmes Finos e Superfícies (LFFS), Departamento de Física, Universidade Federal de Santa Catarina, CP 476 Florianópolis (Brazil)

    2015-03-14

    A structure consisting of two concentric asymmetric nanorings, each displaying vortex remanent states, is studied with micromagnetic calculations. By orienting in suitable directions, both the asymmetry of the rings and a uniform magnetic field, the vortices chiralities can be switched from parallel to antiparallel, obtaining in this way the analogue of the ferromagnetic and antiferromagnetic configurations found in bar magnets pairs. Conditions on the thickness of single rings to obtain vortex states, as well as formulas for their remanent magnetization are given. The concentric ring structure enables the creation of magnetoresistive systems comprising the qualities of magnetic nanorings, such as low stray fields and high stability. A possible application is as contacts in spin injection in semiconductors, and estimations obtained here of magnetoresistance change for a cylindrical spin injection based device show significant variations comparable to linear geometries.

  19. Anomalous anisotropic magnetoresistance effects in graphene

    Directory of Open Access Journals (Sweden)

    Yiwei Liu

    2014-09-01

    Full Text Available We investigate the effect of external stimulus (temperature, magnetic field, and gases adsorptions on anisotropic magnetoresistance (AMR in multilayer graphene. The graphene sample shows superlinear magnetoresistance when magnetic field is perpendicular to the plane of graphene. A non-saturated AMR with a value of −33% is found at 10 K under a magnetic field of 7 T. It is surprisingly to observe that a two-fold symmetric AMR at high temperature is changed into a one-fold one at low temperature for a sample with an irregular shape. The anomalous AMR behaviors may be understood by considering the anisotropic scattering of carriers from two asymmetric edges and the boundaries of V+(V- electrodes which serve as active adsorption sites for gas molecules at low temperature. Our results indicate that AMR in graphene can be optimized by tuning the adsorptions, sample shape and electrode distribution in the future application.

  20. Feasibility study for early removal of HEU from CPP-651-Phase II

    Energy Technology Data Exchange (ETDEWEB)

    Smith, C.V.; Henry, R.; Milligan, C.; Harmon, B.; Peterson, J.; Thom, M.A.; Campbell, R.; Hendrix, B.

    1997-09-01

    A two-phase feasibility study was initiated in late 1996 to identify a way to expedite the removal of SNM from the CPP-651 vault. The first phase of this study provided preliminary information that appeared promising, but needed additional detailed planning and evaluate to validate the concepts and conclusions. The focus of Phase 2 was to provide the validation via resource-loaded schedules and more detailed cost estimates. Section 1 describes the purpose and objectives of the Phase 2 tasks and the programmatic drivers that influence related CPP-651 high-enriched uranium (HEU) management issues. Section 2 identifies the evaluation criteria and methodology and the transfer issues and barriers preventing shipment. Section 3 provides site-specific background information for the CPP-651 facility and the Idaho National Engineering and Environmental Laboratory (INEEL) and describes the development of the basic material removal schedule, the proposed base case plan for removal of SNM, and the proposed HEU material management/shipping issues and strategies. Section 4 identifies the proposed options for accelerated removal of SNM and how they were evaluated via detailed scheduling, resource histograms, and cost analysis. Section 5 summarizes principal tasks for implementing this plan and other related HEU CPP-651 management issues that require continued planning efforts to assure successful implementation of this proposed early removal strategy.

  1. CPP-TRS(C): On using visual cognitive symbols to enhance communication effectiveness

    Science.gov (United States)

    Tonfoni, Graziella

    1994-01-01

    Communicative Positioning Program/Text Representation Systems (CPP-TRS) is a visual language based on a system of 12 canvasses, 10 signals and 14 symbols. CPP-TRS is based on the fact that every communication action is the result of a set of cognitive processes and the whole system is based on the concept that you can enhance communication by visually perceiving text. With a simple syntax, CPP-TRS is capable of representing meaning and intention as well as communication functions visually. Those are precisely invisible aspects of natural language that are most relevant to getting the global meaning of a text. CPP-TRS reinforces natural language in human machine interaction systems. It complements natural language by adding certain important elements that are not represented by natural language by itself. These include communication intention and function of the text expressed by the sender, as well as the role the reader is supposed to play. The communication intention and function of a text and the reader's role are invisible in natural language because neither specific words nor punctuation conveys them sufficiently and unambiguously; they are therefore non-transparent.

  2. Giant magnetoresistance in organic spin-valves.

    Science.gov (United States)

    Xiong, Z H; Wu, Di; Vardeny, Z Valy; Shi, Jing

    2004-02-26

    A spin valve is a layered structure of magnetic and non-magnetic (spacer) materials whose electrical resistance depends on the spin state of electrons passing through the device and so can be controlled by an external magnetic field. The discoveries of giant magnetoresistance and tunnelling magnetoresistance in metallic spin valves have revolutionized applications such as magnetic recording and memory, and launched the new field of spin electronics--'spintronics'. Intense research efforts are now devoted to extending these spin-dependent effects to semiconductor materials. But while there have been noteworthy advances in spin injection and detection using inorganic semiconductors, spin-valve devices with semiconducting spacers have not yet been demonstrated. pi-conjugated organic semiconductors may offer a promising alternative approach to semiconductor spintronics, by virtue of their relatively strong electron-phonon coupling and large spin coherence. Here we report the injection, transport and detection of spin-polarized carriers using an organic semiconductor as the spacer layer in a spin-valve structure, yielding low-temperature giant magnetoresistance effects as large as 40 per cent.

  3. Peptide nucleic acid (PNA) cell penetrating peptide (CPP) conjugates as carriers for cellular delivery of antisense oligomers

    DEFF Research Database (Denmark)

    Shiraishi, Takehiko; Nielsen, Peter E

    2012-01-01

    We have explored the merits of a novel delivery strategy for the antisense oligomers based on cell penetrating peptide (CPP) conjugated to a carrier PNA with sequence complementary to part of the antisense oligomer. The effect of these carrier CPP-PNAs was evaluated by using antisense PNA targeting...... splicing correction of the mutated luciferase gene in the HeLa pLuc705 cell line, reporting cellular (nuclear) uptake of the antisense PNA via luciferase activity measurement. Carrier CPP-PNA constructs were studied in terms of construct modification (with octaarginine and/or decanoic acid) and carrier PNA...

  4. Origin of the extremely large magnetoresistance in the semimetal YSb

    Science.gov (United States)

    Xu, J.; Ghimire, N. J.; Jiang, J. S.; Xiao, Z. L.; Botana, A. S.; Wang, Y. L.; Hao, Y.; Pearson, J. E.; Kwok, W. K.

    2017-08-01

    Electron-hole (e -h ) compensation is a hallmark of multiband semimetals with extremely large magnetoresistance (XMR) and has been considered to be the basis for XMR. Recent spectroscopic experiments, however, reveal that YSb with nonsaturating magnetoresistance is uncompensated, questioning the e -h compensation scenario for XMR. Here we demonstrate with magnetoresistivity and angle-dependent Shubnikov-de Haas (SdH) quantum oscillation measurements that YSb does have nearly perfect e -h compensation, with a density ratio of ˜0.95 for electrons and holes. The density and mobility anisotropy of the charge carriers revealed in the SdH experiments allow us to quantitatively describe the magnetoresistance with an anisotropic multiband model that includes contributions from all Fermi pockets. We elucidate the role of compensated multibands in the occurrence of XMR by demonstrating the evolution of calculated magnetoresistances for a single band and for various combinations of electron and hole Fermi pockets.

  5. Electrically tuned magnetic order and magnetoresistance in a topological insulator.

    Science.gov (United States)

    Zhang, Zuocheng; Feng, Xiao; Guo, Minghua; Li, Kang; Zhang, Jinsong; Ou, Yunbo; Feng, Yang; Wang, Lili; Chen, Xi; He, Ke; Ma, Xucun; Xue, Qikun; Wang, Yayu

    2014-09-15

    The interplay between topological protection and broken time reversal symmetry in topological insulators may lead to highly unconventional magnetoresistance behaviour that can find unique applications in magnetic sensing and data storage. However, the magnetoresistance of topological insulators with spontaneously broken time reversal symmetry is still poorly understood. In this work, we investigate the transport properties of a ferromagnetic topological insulator thin film fabricated into a field effect transistor device. We observe a complex evolution of gate-tuned magnetoresistance, which is positive when the Fermi level lies close to the Dirac point but becomes negative at higher energies. This trend is opposite to that expected from the Berry phase picture, but is intimately correlated with the gate-tuned magnetic order. The underlying physics is the competition between the topology-induced weak antilocalization and magnetism-induced negative magnetoresistance. The simultaneous electrical control of magnetic order and magnetoresistance facilitates future topological insulator based spintronic devices.

  6. CppTransport: a platform to automate calculation of inflationary correlation functions

    CERN Document Server

    Seery, David

    2016-01-01

    CppTransport is a numerical platform that can automatically generate and solve the evolution equations for the 2- and 3-point correlation functions (in field space and for the curvature perturbation) for any inflationary model with canonical kinetic terms. It makes no approximations beyond the applicability of tree-level perturbation theory. Given an input Lagrangian, CppTransport performs symbolic calculations to determine the 'Feynman rules' of the model and generates efficient C++ to integrate the correlation functions of interest. It includes a visualization suite that automates extraction of observable quantities from the raw n-point functions and generates high quality plots with minimal manual intervention. It is intended to be used as a collaborative platform, promoting the rapid investigation of models and systematizing their comparison with observation. This guide describes how to install and use the system, and illustrates its use through some simple examples.

  7. Commercial Application of CPP for Producing Ethylene and Propylene from Heavy Oil Feed

    Institute of Scientific and Technical Information of China (English)

    Hou Dianguo; Xie Chaogang; Wang Xieqing

    2003-01-01

    A new process named CPP (Catalytic Pyrolysis Process) for producing ethylene andpropylene from heavy oil feedstock has been developed. The catalyst CEP was specially designedfor this process, which has bi-functional catalytic activities for both carbonium ion reaction andfree radical reaction, so as to maximize the yields of ethylene and propylene. The commercial trialshowed that the yield of ethylene and propylene was 20.37% and 18.23% respectively inmaximum ethylene operation with Daqing AR as feedstock, and the yield of ethylene and propylenewas 9.77% and 24.60% respectively in maximum propylene operation by using the same feedstock.Compared with steam cracker, the feed cost of CPP is much lower for producing ethylene andpropylene.

  8. Nonlinear Giant Magnetoresistance in Dual Spin Valves

    Science.gov (United States)

    Aziz, A.; Wessely, O. P.; Ali, M.; Edwards, D. M.; Marrows, C. H.; Hickey, B. J.; Blamire, M. G.

    2009-12-01

    Giant magnetoresistance (GMR) arises from differential scattering of the majority and minority spin electrons by a ferromagnet (FM) so that the resistance of a heterostructure depends on the relative magnetic orientation of the FM layers within it separated by nonmagnetic spacers. Here, we show that highly nonequilibrium spin accumulation in metallic heterostructures results in a current-dependent nonlinear GMR which is not predicted within the present understanding of GMR. The behavior can be explained by allowing the scattering asymmetries in an ultrathin FM layer to be current dependent.

  9. Giant magnetoresistance in bilayer graphene nanoflakes

    Science.gov (United States)

    Farghadan, Rouhollah; Farekiyan, Marzieh

    2016-09-01

    Coherent spin transport through bilayer graphene (BLG) nanoflakes sandwiched between two electrodes made of single-layer zigzag graphene nanoribbon was investigated by means of Landauer-Buttiker formalism. Application of a magnetic field only on BLG structure as a channel produces a perfect spin polarization in a large energy region. Moreover, the conductance could be strongly modulated by magnetization of the zigzag edge of AB-stacked BLG, and the junction, entirely made of carbon, produces a giant magnetoresistance (GMR) up to 100%. Intestinally, GMR and spin polarization could be tuned by varying BLG width and length. Generally, MR in a AB-stacked BLG strongly increases (decreases) with length (width).

  10. Quince 'CPP': new dwarf rootstock for pear trees on organic and high density planting

    OpenAIRE

    Renato Vasconcelos Botelho; Everton Schneider; Danielle Machado; Rafael Piva; Andricia Verlindo

    2012-01-01

    In Brazil, pear production presents the same incipient situation over the last 15 years, due mostly to low production technology. In this context, this study aimed to evaluate the development, growth and production of the pear tree cultivars Cascatense, Tenra and Hosui grafted on 'CPP' quince rootstock, using 'FT' pear as interstem. This trial was carried out in Guarapuava, State of Paraná, Southern region of Brazil, by five productive cycles. The pear trees were planted in September of 2004,...

  11. The effects of piracetam on heroin-induced CPP and neuronal apoptosis in rats.

    Science.gov (United States)

    Xu, Peng; Li, Min; Bai, Yanping; Lu, Wei; Ling, Xiaomei; Li, Weidong

    2015-05-01

    Piracetam is a positive allosteric modulator of the AMPA receptor that has been used in the treatment of cognitive disorders for decades. Recent surveys and drug analyses have demonstrated that a heroin mixture adulterated with piracetam has spread rapidly in heroin addicts in China, but its addictive properties and the damage it causes to the central neural system are currently unknown. The effect of piracetam on the reward properties of heroin was assessed by conditioned place preference (CPP). Electron microscopy and radioimmunoassay were used to compare the effects of heroin mixed with equivalent piracetam (HP) and heroin alone on neuronal apoptosis and the levels of beta-endorphin (β-EP) in different brain subregions within the corticolimbic system, respectively. Piracetam significantly enhanced heroin-induced CPP expression while piracetam itself didn't induce CPP. Morphological observations showed that HP-treated rats had less neuronal apoptosis than heroin-treated group. Interestingly, HP normalized the levels of β-EP in the medial prefrontal cortex (mPFC) and core of the nucleus accumbens (AcbC) subregions, in where heroin-treated rats showed decreased levels of β-EP. These results indicate that piracetam potentiate the heroin-induced CPP and protect neurons from heroin-induced apoptosis. The protective role of HP might be related to the restoration of β-EP levels by piracetam. Our findings may provide a potential interpretation for the growing trend of HP abuse in addicts in China. Copyright © 2015 Elsevier Ireland Ltd. All rights reserved.

  12. CPP-603 Underwater Fuel Storage Facility Site Integrated Stabilization Management Plan (SISMP), Volume I

    Energy Technology Data Exchange (ETDEWEB)

    Denney, R.D.

    1995-10-01

    The CPP-603 Underwater Fuel Storage Facility (UFSF) Site Integrated Stabilization Management Plan (SISMP) has been constructed to describe the activities required for the relocation of spent nuclear fuel (SNF) from the CPP-603 facility. These activities are the only Idaho National Engineering Laboratory (INEL) actions identified in the Implementation Plan developed to meet the requirements of the Defense Nuclear Facilities Safety Board (DNFSB) Recommendation 94-1 to the Secretary of Energy regarding an improved schedule for remediation in the Defense Nuclear Facilities Complex. As described in the DNFSB Recommendation 94-1 Implementation Plan, issued February 28, 1995, an INEL Spent Nuclear Fuel Management Plan is currently under development to direct the placement of SNF currently in existing INEL facilities into interim storage, and to address the coordination of intrasite SNF movements with new receipts and intersite transfers that were identified in the DOE SNF Programmatic and INEL Environmental Restoration and Waste Management Environmental Impact Statement Record, of Decision. This SISMP will be a subset of the INEL Spent Nuclear Fuel Management Plan and the activities described are being coordinated with other INEL SNF management activities. The CPP-603 relocation activities have been assigned a high priority so that established milestones will be meet, but there will be some cases where other activities will take precedence in utilization of available resources. The Draft INEL Site Integrated Stabilization Management Plan (SISMP), INEL-94/0279, Draft Rev. 2, dated March 10, 1995, is being superseded by the INEL Spent Nuclear Fuel Management Plan and this CPP-603 specific SISMP.

  13. CPP5Gs 全自动倾点浊点测试仪故障分析与维护%Faults analysis and maintenance of CPP5Gs

    Institute of Scientific and Technical Information of China (English)

    李建辉; 赵亮; 范晓兰; 张江峰

    2015-01-01

    介绍了 CPP5Gs 工作原理、操作条件,并对在使用过程出现的光学检测等问题进行了分析和应对,对温度探头校正进行了阐述。%This paper introduced CPP5Gs work principle,operation condition,analyzed the common faults and discussed the maintence.

  14. jMetalCpp: optimizing molecular docking problems with a C++ metaheuristic framework.

    Science.gov (United States)

    López-Camacho, Esteban; García Godoy, María Jesús; Nebro, Antonio J; Aldana-Montes, José F

    2014-02-01

    Molecular docking is a method for structure-based drug design and structural molecular biology, which attempts to predict the position and orientation of a small molecule (ligand) in relation to a protein (receptor) to produce a stable complex with a minimum binding energy. One of the most widely used software packages for this purpose is AutoDock, which incorporates three metaheuristic techniques. We propose the integration of AutoDock with jMetalCpp, an optimization framework, thereby providing both single- and multi-objective algorithms that can be used to effectively solve docking problems. The resulting combination of AutoDock + jMetalCpp allows users of the former to easily use the metaheuristics provided by the latter. In this way, biologists have at their disposal a richer set of optimization techniques than those already provided in AutoDock. Moreover, designers of metaheuristic techniques can use molecular docking for case studies, which can lead to more efficient algorithms oriented to solving the target problems.  jMetalCpp software adapted to AutoDock is freely available as a C++ source code at http://khaos.uma.es/AutodockjMetal/.

  15. Separation of positional CPP isomers by chiral HPLC-DAD of seized tablets.

    Science.gov (United States)

    Schürenkamp, Jennifer; Beike, Justus; Pfeiffer, Heidi; Köhler, Helga

    2011-01-01

    Meta-chlorophenylpiperazine, one of the synthetic piperazine-derived designer drugs, is to date controlled as an illicit substance in five European member states. Depending on the position of the chlorine atom, different positional isomers of CPP (ortho-, meta- and para-) are possible. Therefore, there is a need to develop an analytical method for the separation and identification of the three 1-chlorophenylpiperazines in tablets containing CPP. In this work, the position isomers o-, m- and p-CPP were separated by liquid chromatography (HPLC) on a reversed-phase chiral column. Different mobile phase compositions and pH ranges were systematically studied to find optimum chromatographic conditions. Best results were achieved with isocratic mobile phase of triethyl amine buffer and methanol (V/V = 70/30) at pH 9 with a flow rate of 0.8 ml/min. The method was validated in terms of selectivity, linearity, limit of detection and quantification and precision. At last, the developed method was successfully applied on seized ecstasy tablets.

  16. Effect of CPP-ACP paste on dental caries in primary teeth: a randomized trial.

    Science.gov (United States)

    Sitthisettapong, T; Phantumvanit, P; Huebner, C; Derouen, T

    2012-09-01

    This clinical trial tested the effect of daily application of 10% w/v calcium phosphopeptide-amorphous calcium phosphate (CPP-ACP) paste for 1 yr when added to regular toothbrushing with fluoridated toothpaste to prevent dental caries in pre-school children. High-caries-risk children aged 2½ to 3½ yrs in a suburban area of central Thailand were assigned to receive either CPP-ACP (n = 150) or a placebo control (n = 146) in addition to fluoridated toothpaste. The International Caries Detection and Assessment System (ICDAS) was recorded at baseline, 6 mos, and 1 yr. At 1 yr, a significant increase in mean numbers of enamel and dentin caries lesions, as well as dmfs, was found in both groups (p stability, compared with progression from baseline, was also not different between groups [OR = 1.00, 95% CI (0.86, 1.17)]. This trial found that daily application of 10% w/v CPP-ACP paste on school days for 1 yr, when added to regular toothbrushing with a fluoride toothpaste, had no significant added effect in preventing caries in the primary dentition of these pre-school children (ClinicalTrials.gov number CT01 604109).

  17. Effects of spatial memory on morphine CPP and locomotor sensitization in mice.

    Science.gov (United States)

    Zhu, Xiaolin; Sun, Wei; Li, Xinwang; Tan, Shuping; Zhang, Xiangyang

    2015-10-01

    Drug addiction is associated with memory processes. We simultaneously measured conditioned place preference (CPP) and locomotor sensitization to investigate the influence of spatial memory retrieval on morphine reward and psychomotor excitement. According to their performance in space probe trial involving the Morris water maze mice were assigned to high (including morphine and saline subgroups, H-Mor and H-Sal) and low spatial memory retrieval ability groups (L-Mor and L-Sal). Morphine (10mg/kg) produced significant CPP in L-Mor and H-Mor mice, although, L-Mor mice showed a significantly greater response to morphine. During the development period of behavior sensitization, no significant group-by-day interaction was found. However, locomotor activities of L-Mor mice were also significantly higher than H-Mor mice during the expression period of behavior sensitization. Our findings suggested that the spatial memory retrieval ability of mice influences morphine CPP, as well as behavioral sensitization. Thus, spatial memory might be implicated in drug addiction.

  18. Effects of the addition of casein phosphopeptide-amorphous calcium phosphate (CPP-ACP) on mechanical properties of luting and lining glass ionomer cement

    Science.gov (United States)

    Heravi, Farzin; Bagheri, Hossein; Rangrazi, Abdolrasoul; Mojtaba Zebarjad, Seyed

    2016-07-01

    Recently, the addition of casein phosphopeptide-amorphous calcium phosphate (CPP-ACP) into glass ionomer cements (GICs) has attracted interest due to its remineralization of teeth and its antibacterial effects. However, it should be investigated to ensure that the incorporation of CPP-ACP does not have significant adverse effects on its mechanical properties. The purpose of this study was to evaluate the effects of the addition of CPP-ACP on the mechanical properties of luting and lining GIC. The first step was to synthesize the CPP-ACP. Then the CPP-ACP at concentrations of 1%, 1.56% and 2% of CPP-ACP was added into a luting and lining GIC. GIC without CPP-ACP was used as a control group. The results revealed that the incorporation of CPP-ACP up to 1.56%(w/w) increased the flexural strength (29%), diametral tensile strength (36%) and microhardness (18%), followed by a reduction in these mechanical properties at 2%(w/w) CPP-ACP. The wear rate was significantly decreased (23%) in 1.56%(w/w) concentration of CPP-ACP and it was increased in 2%(w/w). Accordingly, the addition of 1.56%(w/w) CPP-ACP into luting and lining GIC had no adverse effect on the mechanical properties of luting and lining GIC and could be used in clinical practice.

  19. A 12-Week Assessment of the Treatment of White Spot Lesions with CPP-ACP Paste and/or Fluoride Varnish

    Directory of Open Access Journals (Sweden)

    Zeynep Aslı Güçlü

    2016-01-01

    Full Text Available This 12-week clinical study evaluated the impact of 10% CPP-ACP and 5% sodium fluoride varnish regimes on the regression of nonorthodontic white spot lesions (WSLs. The study included 21 children with 101 WSLs who were randomised into four treatment regimes: weekly clinical applications of fluoride varnish for the first month (FV; twice daily self-applications of CPP-ACP paste (CPP-ACP; weekly applications of fluoride varnish for the first month and twice daily self-applications of CPP-ACP paste (CPP-ACP-FV; and no intervention (control. All groups undertook a standard oral hygiene protocol and weekly consultation. Visual appraisals and laser fluorescence (LF measurements were made in weeks one and twelve. The majority of WSLs in the control and FV groups exhibited no shift in appearance, whereas, in the CPP-ACP and CPP-ACP-FV groups, the lesions predominantly regressed. The visual and LF assessments indicated that the extent of remineralisation afforded by the treatments was of the following order: control ~ FV < CPP-ACP ~ CPP-ACP-FV. Self-applications of CPP-ACP paste as an adjunct to standard oral hygiene significantly improved the appearance and remineralisation of WSLs. No advantage was observed for the use of fluoride varnish as a supplement to either the standard or CPP-ACP-enhanced oral hygiene regimes.

  20. The effect of CPP-ACP-propolis chewing gum on calcium and phosphate ion release on caries-active subjects’ saliva and the formation of Streptococcus mutans biofilm

    Science.gov (United States)

    Hasnamudhia, F.; Bachtiar, E. W.; Sahlan, M.; Soekanto, S. A.

    2017-08-01

    The aim of this study was to analyze the effect of CPP-APP and propolis wax if they are combined in a chewing gum formulation, observed from the calcium and phosphate ion level released by CPP-ACP and the emphasis of Streptococcus mutans mass in the biofilm by propolis wax on caries-active subjects’ saliva. Chewing gum simulation was done in vitro on 25 caries-active subjects’ saliva using five concentrations of chewing gum (0% propolis + 0% CPP-ACP, 0% propolis + CPP-ACP, 2% propolis + CPP-ACP, 4% propolis + CPP-ACP, and 6% propolis + CPP-ACP) and was then tested using an atomic absorption spectrophotometer to analyze calcium ion levels, an ultraviolet-visible spectrophotometer to analyze phosphate ion levels, and a biofilm assay using crystal violet to analyze the decline in biofilm mass. After the chewing simulation, calcium ion levels on saliva+gum eluent increased significantly compared to the saliva control, with the highest calcium level released by CPP-ACP + 2% propolis chewing gum. There was an insignificant phosphate level change between the saliva control and saliva+gum eluent. There was also a significant decline of S. mutans biofilm mass in the saliva+gum eluent, mostly by the CPP-ACP chewing gum and CPP-ACP + 6% propolis. The CPP-ACP-propolis chewing gum simulation generated the largest increase in calcium and phosphate ion level and the largest decline in S. mutans biofilm mass.

  1. Systematic study of doping dependence on linear magnetoresistance in p-PbTe

    Energy Technology Data Exchange (ETDEWEB)

    Schneider, J. M.; Chitta, V. A.; Oliveira, N. F. [Instituto de Física, Universidade de São Paulo, São Paulo, PB 66318, São Paulo CEP 05315-970 (Brazil); Peres, M. L., E-mail: marcelos@unifei.edu.br; Castro, S. de; Soares, D. A. W. [Departamento de Física e Química, Universidade Federal de Itajubá, Itajubá, PB 50, Minas Gerais CEP 37500-903 (Brazil); Wiedmann, S.; Zeitler, U. [Radboud University Nijmegen, Institute for Molecules and Materials, High Field Magnet Laboratory, Toernooiveld 7, 6525 ED Nijmegen (Netherlands); Abramof, E.; Rappl, P. H. O.; Mengui, U. A. [Laboratório Associado de Sensores e Materiais, Instituto Nacional de Pesquisas Espaciais, São José dos Campos, PB 515, São Paulo CEP 12201-970 (Brazil)

    2014-10-20

    We report on a large linear magnetoresistance effect observed in doped p-PbTe films. While undoped p-PbTe reveals a sublinear magnetoresistance, p-PbTe films doped with BaF{sub 2} exhibit a transition to a nearly perfect linear magnetoresistance behaviour that is persistent up to 30 T. The linear magnetoresistance slope ΔR/ΔB is to a good approximation, independent of temperature. This is in agreement with the theory of Quantum Linear Magnetoresistance. We also performed magnetoresistance simulations using a classical model of linear magnetoresistance. We found that this model fails to explain the experimental data. A systematic study of the doping dependence reveals that the linear magnetoresistance response has a maximum for small BaF{sub 2} doping levels and diminishes rapidly for increasing doping levels. Exploiting the huge impact of doping on the linear magnetoresistance signal could lead to new classes of devices with giant magnetoresistance behavior.

  2. An investigation of manganites exhibiting colossal magnetoresistance

    CERN Document Server

    Coldea, A I

    2001-01-01

    charge-ordered regions with possible phase separation. Magnetic field-induced transitions are reported and the effect of granularity on the magnetoresistance is studied. Effects of magnetic dilution with non-magnetic Ga and Rh ions on perovskite manganites, (La/Nd) sub 2 sub - sub x Sr sub x Mn(Ga/Rh)O sub 6 , are presented in Chapter 4. The random distribution of magnetic ions on the manganese network affects both the magnetic and electrical properties. As a function of hole doping x, La sub 2 sub - sub x Sr sub x MnGaO sub 6 compounds are ferromagnetic at low doping (x 0.3) become magnetically disordered due to the frustration induced by competing ferromagnetic and antiferromagnetic interactions. The Rh dilution helps stabilize the ferromagnetic phase in La sub 1 sub . sub 5 Sr sub 0 sub . sub 5 MnRhO sub 6. All compounds are insulating due to the charge localization induced by the random potential created by the local structural and magnetic disorder. The observed magnetoresistance is discussed either in ...

  3. Magnetoresistive flux focusing eddy current flaw detection

    Science.gov (United States)

    Wincheski, Russell A. (Inventor); Namkung, Min (Inventor); Simpson, John W. (Inventor)

    2005-01-01

    A giant magnetoresistive flux focusing eddy current device effectively detects deep flaws in thick multilayer conductive materials. The probe uses an excitation coil to induce eddy currents in conducting material perpendicularly oriented to the coil's longitudinal axis. A giant magnetoresistive (GMR) sensor, surrounded by the excitation coil, is used to detect generated fields. Between the excitation coil and GMR sensor is a highly permeable flux focusing lens which magnetically separates the GMR sensor and excitation coil and produces high flux density at the outer edge of the GMR sensor. The use of feedback inside the flux focusing lens enables complete cancellation of the leakage fields at the GMR sensor location and biasing of the GMR sensor to a location of high magnetic field sensitivity. In an alternate embodiment, a permanent magnet is positioned adjacent to the GMR sensor to accomplish the biasing. Experimental results have demonstrated identification of flaws up to 1 cm deep in aluminum alloy structures. To detect deep flaws about circular fasteners or inhomogeneities in thick multilayer conductive materials, the device is mounted in a hand-held rotating probe assembly that is connected to a computer for system control, data acquisition, processing and storage.

  4. Crystal orientation dependence of band matching in all-B2-trilayer current-perpendicular-to-plane giant magnetoresistance pseudo spin-valves using Co{sub 2}Fe(Ge{sub 0.5}Ga{sub 0.5}) Heusler alloy and NiAl spacer

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Jiamin; Hono, K., E-mail: kazuhiro.hono@nims.go.jp [National Institute for Materials Science, 1-2-1, Sengen, Tsukuba 305-0047 (Japan); Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-2-1, Sengen, Tsukuba 305-0047 (Japan); Furubayashi, T.; Takahashi, Y. K.; Sasaki, T. T. [National Institute for Materials Science, 1-2-1, Sengen, Tsukuba 305-0047 (Japan)

    2015-05-07

    We have experimentally investigated the crystal orientation dependence of band matching in current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) pseudo-spin-valves using Co{sub 2}Fe(Ge{sub 0.5}Ga{sub 0.5}) (CFGG) Heusler alloy ferromagnetic layer and NiAl spacer. The high quality epitaxial CFGG/NiAl/CFGG all-B2-trilayers structure devices were fabricated on both MgO(001) and sapphire (112{sup ¯}0) single crystal substrates to create (001) and (110) crystal orientations. Same magneto-transport properties were observed from these two differently orientated devices indicating that there is no or little orientation dependence of band matching on MR output. We also found that all-B2-trilayer structure was free of lattice matching influence depending on the crystal orientation, which made it a good candidate for CPP-GMR device.

  5. Non-local magnetoresistance in YIG/Pt nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Goennenwein, Sebastian T. B., E-mail: goennenwein@wmi.badw.de; Pernpeintner, Matthias; Gross, Rudolf; Huebl, Hans [Walther-Meißner-Institut, Bayerische Akademie der Wissenschaften, Walther-Meißner-Str. 8, 85748 Garching (Germany); Nanosystems Initiative Munich (NIM), Schellingstraße 4, 80799 München (Germany); Physik-Department, Technische Universität München, James-Franck-Str. 1, 85748 Garching (Germany); Schlitz, Richard; Ganzhorn, Kathrin [Walther-Meißner-Institut, Bayerische Akademie der Wissenschaften, Walther-Meißner-Str. 8, 85748 Garching (Germany); Physik-Department, Technische Universität München, James-Franck-Str. 1, 85748 Garching (Germany); Althammer, Matthias [Walther-Meißner-Institut, Bayerische Akademie der Wissenschaften, Walther-Meißner-Str. 8, 85748 Garching (Germany)

    2015-10-26

    We study the local and non-local magnetoresistance of thin Pt strips deposited onto yttrium iron garnet. The local magnetoresistive response, inferred from the voltage drop measured along one given Pt strip upon current-biasing it, shows the characteristic magnetization orientation dependence of the spin Hall magnetoresistance. We simultaneously also record the non-local voltage appearing along a second, electrically isolated, Pt strip, separated from the current carrying one by a gap of a few 100 nm. The corresponding non-local magnetoresistance exhibits the symmetry expected for a magnon spin accumulation-driven process, confirming the results recently put forward by Cornelissen et al. [“Long-distance transport of magnon spin information in a magnetic insulator at room temperature,” Nat. Phys. (published online 14 September 2015)]. Our magnetotransport data, taken at a series of different temperatures as a function of magnetic field orientation, rotating the externally applied field in three mutually orthogonal planes, show that the mechanisms behind the spin Hall and the non-local magnetoresistance are qualitatively different. In particular, the non-local magnetoresistance vanishes at liquid Helium temperatures, while the spin Hall magnetoresistance prevails.

  6. Colossal magnetoresistance in manganites and related prototype devices

    Institute of Scientific and Technical Information of China (English)

    Liu Yu-Kuai; Yin Yue-Wei; Li Xiao-Guang

    2013-01-01

    We review colossal magnetoresistance in single phase manganites,as related to the field sensitive spin-charge interactions and phase separation; the rectifying property and negative/positive magnetoresistance in manganite/Nb∶SrTiO3 p-n junctions in relation to the special interface electronic structure; magnetoelectric coupling in manganite/ferroelectric structures that takes advantage of strain,carrier density,and magnetic field sensitivity; tunneling magnetoresistance in tunnel junctions with dielectric,ferroelectric,and organic semiconductor spacers using the fully spin polarized nature of manganites; and the effect of particle size on magnetic properties in manganite nanoparticles.

  7. Anisotropic magnetoresistance dominant in a three terminal Hanle measurement

    Science.gov (United States)

    Malec, Christopher; Miller, Michael M.; Johnson, Mark

    2016-02-01

    Experiments are performed on mesoscopic nonlocal lateral spin valves with aluminum channels and Permalloy electrodes. Four-terminal magnetoresistance and Hanle measurements characterize the spin accumulation with results that compare well with published work. Three-terminal Hanle measurements of the Permalloy/aluminum (Py/Al) interfaces show bell-shaped curves that can be fit to Lorentzians. These curves are three orders of magnitude larger than the spin accumulation. Using anisotropic magnetoresistance measurements of individual Permalloy electrodes, we demonstrate that the three-terminal measurements are dominated by anisotropic magnetoresistance effects unrelated to spin accumulation.

  8. Magnetoresistance of Electrons Channelled by Microscopic Magnetic Field Modulation

    Institute of Scientific and Technical Information of China (English)

    DAI Bo; LIU Xiao-Xia; LEI Yong; Alain Nogaret

    2009-01-01

    We report the magnetoresistance of two-dimensional electron gas,which is made of GaAs based epitaxial multilayers and laterally subjected to a periodic magnetic field.The modulation field is produced by an array of submicrometre ferromagnets fabricated at the surface of the heterostructure.The magnetoresistance of about 20% is found at low temperature 80K.The measurement is in quantitative agreement with semiclassical simulations,which reveal that the magnetoresistance is due to electrons trapped in snake orbits along lines of zero magnetic field.

  9. Evaluation of Magnetoresistive RAM for Space Applications

    Science.gov (United States)

    Heidecker, Jason

    2014-01-01

    Magnetoresistive random-access memory (MRAM) is a non-volatile memory that exploits electronic spin, rather than charge, to store data. Instead of moving charge on and off a floating gate to alter the threshold voltage of a CMOS transistor (creating different bit states), MRAM uses magnetic fields to flip the polarization of a ferromagnetic material thus switching its resistance and bit state. These polarized states are immune to radiation-induced upset, thus making MRAM very attractive for space application. These magnetic memory elements also have infinite data retention and erase/program endurance. Presented here are results of reliability testing of two space-qualified MRAM products from Aeroflex and Honeywell.

  10. Negative Magnetoresistance in Amorphous Indium Oxide Wires

    Science.gov (United States)

    Mitra, Sreemanta; Tewari, Girish C.; Mahalu, Diana; Shahar, Dan

    2016-11-01

    We study magneto-transport properties of several amorphous Indium oxide nanowires of different widths. The wires show superconducting transition at zero magnetic field, but, there exist a finite resistance at the lowest temperature. The R(T) broadening was explained by available phase slip models. At low field, and far below the superconducting critical temperature, the wires with diameter equal to or less than 100 nm, show negative magnetoresistance (nMR). The magnitude of nMR and the crossover field are found to be dependent on both temperature and the cross-sectional area. We find that this intriguing behavior originates from the interplay between two field dependent contributions.

  11. Giant magnetoresistance An ab-initio description

    CERN Document Server

    Binder, J

    2000-01-01

    A new theoretical concept to study the microscopic origin of Giant Magnetoresistance (GMR) from first principles is presented. The method is based on ab-initio electronic structure calculations within the spin density functional theory using a Screened KORRINGA-KOHNROSTOKER method. Scattering at impurity atoms in the multilayers is described by means of a GREEN's-function method. The scattering potentials are calculated self-consistently. The transport properties are treated quasi-classically solving the BOLTZMANN equation including the electronic structure of the layered system and the anisotropic scattering. The solution of the BOLTZMANN equation is performed iteratively taking into account both scattering out and scattering in terms (vertex corrections). The method is applied to Co/Cu and Fe/Cr multilayers. Trends of scattering cross sections, residual resistivities and GMR ratios are discussed for various transition metal impurities at different positions in the Co/Cu or Fe/Cr multilayers. Furthermore the...

  12. Anomalous magnetoresistance in magnetized topological insulator cylinders

    Energy Technology Data Exchange (ETDEWEB)

    Siu, Zhuo Bin, E-mail: a0018876@nus.edu.sg [NUS Graduate School for Integrative Sciences and Engineering, National University of Singapore, Singapore 117456 (Singapore); Data Storage Institute, Agency for Science, Technology and Research, Singapore 117608 (Singapore); Jalil, Mansoor B. A. [NUS Graduate School for Integrative Sciences and Engineering, National University of Singapore, Singapore 117456 (Singapore)

    2015-05-07

    The close coupling between the spin and momentum degrees of freedom in topological insulators (TIs) presents the opportunity for the control of one to manipulate the other. The momentum can, for example, be confined on a curved surface and the spin influenced by applying a magnetic field. In this work, we study the surface states of a cylindrical TI magnetized in the x direction perpendicular to the cylindrical axis lying along the z direction. We show that a large magnetization leads to an upwards bending of the energy bands at small |k{sub z}|. The bending leads to an anomalous magnetoresistance where the transmission between two cylinders magnetized in opposite directions is higher than when the cylinders are magnetized at intermediate angles with respect to each other.

  13. Current perpendicular-to-plane giant magnetoresistance devices using half-metallic Co2Fe0.4Mn0.6Si electrodes and a Ag-Mg spacer

    Science.gov (United States)

    Kubota, T.; Ina, Y.; Tsujikawa, M.; Morikawa, S.; Narisawa, H.; Wen, Z.; Shirai, M.; Takanashi, K.

    2017-01-01

    Current perpendicular-to-plane (CPP) giant magnetoresistance (GMR) effects in devices including Co2Fe0.4Mn0.6Si (CFMS)/Ag100-x Mg x /CFMS structures were investigated theoretically and experimentally. First-principles transport calculation revealed that the Fermi surface matching between CFMS and L12 Ag3Mg is better than that between CFMS and fcc-Ag. In the experiments the Mg composition, x was changed from 0 to 26 at.%, in which both face centered cubic phase and L12 phase of Ag-Mg alloys are included depending on the Mg composition. It was confirmed by a cross-sectional high-angle annular dark field scanning transmission electron microscope (HAADF-STEM) image that the Ag-Mg spacer layer with L12 ordered phase was successfully fabricated for x  =  22 at.%. The maximum CPP-GMR ratio and the change of the areal resistance ( Δ RA ) were 56% and 20 m Ω \\cdot μ m2, respectively, for x  =  22 at.% at room temperature, which is much higher than that of the conventionally used pure Ag spacer devices. It was suggested from the HAADF-STEM images and the results of the temperature dependence of CPP-GMR effects that the diffusion of Mn atoms occurred less at the CFMS/Ag-Mg interfaces for the L12 ordered Ag-Mg spacer devices than the Ag spacer devices, which might be a key factor for the enhancement of the Δ RA value. The newly developed L12 Ag-Mg spacer is a promising material for realizing large Δ RA of the CPP-GMR devices.

  14. Magnetoresistive smart fluid (marsonpol) and devices

    Science.gov (United States)

    Reji, John; Suresh, G.; Narayanadas, D. J.

    2003-10-01

    Magnetorheological fluid, Electrorheological fluid and ferro fluids are the smart fluids known today. These fluids are either electrically conductive or non conductive. They do not exhibit variable electrical resistance or switching behavior. Of recent interest to researchers has been the development of new types of magnetoresistive materials. Such materials can be of large practical importance, as they will change their electrical resistance in the presence of a magnetic field. However, most materials only exhibit appreciable magnetoresistance under extreme conditions, such as high magnetic fields or low temperatures. A smart fluid whose electrical resistance can be varied by several orders of magnitude under nominal level of magnetic field is reported in this paper (designated MARSONPOL). In the absence of a magnetic field the fluid is an insulator having electrical resistance in the order of 108 ohm-meter and in the presence of a magnetic field the resistance of the material reduces to less than 1 ohm-meter, at room temperature of 30°C. The sharp and reversible change in resistivity makes the material transform from an insulator to conductor, rendering properties characteristic of either state, within a fraction of a second. Fluids with such characteristics are not reported in the literature making this development a breakthrough and opening up potentials for the development of several smart devices. One such device is the magnetic field sensor probe currently under development at NPOL. A capsule of MARSONPOL forms the basic sensor element. Depending on the strength of the Magnetic field, the electrical resistivity of the capsule undergoes changes. The present paper will discuss details of the smart fluid as well as features of the magnetic field sensor.

  15. Low temperature magnetoresistance measurements on bismuth nanowire arrays.

    Science.gov (United States)

    Kaiser, Ch; Weiss, G; Cornelius, T W; Toimil-Molares, M E; Neumann, R

    2009-05-20

    We present low temperature resistance R(T) and magnetoresistance measurements for Bi nanowires with diameters between 100 and 500 nm, which are close to being single-crystalline. The nanowires were fabricated by electrochemical deposition in pores of polycarbonate membranes. R(T) varies as T(2) in the low temperature range 1.5 Kwire diameter. An unexpected effect is observed in R(T) when a magnetic field is present. It can be related to the temperature dependence of the magnetoresistance. The transverse magnetoresistance of all samples shows a clear B(1.5) variation. Its size depends strongly on the diameter of the wires but only weakly on temperature. Finally, a steplike increase in the magnetoresistance of our sample with a wire diameter of 100 nm was found and this might be attributed to a transition from one-dimensional to three-dimensional localization.

  16. Magnetoresistive properties of nanostructured magnetic metals, manganites, and magnetic semiconductors

    Science.gov (United States)

    Solin, N. I.; Romashev, L. N.; Naumov, S. V.; Saranin, A. A.; Zotov, A. V.; Olyanich, D. A.; Kotlyar, V. G.; Utas, O. A.

    2016-02-01

    We consider methods for controlling magnetoresistive parameters of magnetic metal superlattices, manganites, and magnetic semiconductors. By reducing the thickness of ferromagnetic layers in superlattices (e.g., Fe layers in Fe/Cr superlattices), it is possible to form superparamagnetic clustered-layered nanostructures with a magnetoresistance weakly depending on the direction of the external magnetic field, which is very important for applications of such type of materials. Producing Mn vacancies and additionally annealing lanthanum manganites in the oxygen atmosphere, it is possible to increase their magnetoresistance by more than four orders of magnitude. By changing the thickness of p- n junction in the structure of ferromagnetic semiconductors, their magnetoresistance can be increased by 2-3 orders of magnitude.

  17. Recent Developments of Magnetoresistive Sensors for Industrial Applications

    Directory of Open Access Journals (Sweden)

    Lisa Jogschies

    2015-11-01

    Full Text Available The research and development in the field of magnetoresistive sensors has played an important role in the last few decades. Here, the authors give an introduction to the fundamentals of the anisotropic magnetoresistive (AMR and the giant magnetoresistive (GMR effect as well as an overview of various types of sensors in industrial applications. In addition, the authors present their recent work in this field, ranging from sensor systems fabricated on traditional substrate materials like silicon (Si, over new fabrication techniques for magnetoresistive sensors on flexible substrates for special applications, e.g., a flexible write head for component integrated data storage, micro-stamping of sensors on arbitrary surfaces or three dimensional sensing under extreme conditions (restricted mounting space in motor air gap, high temperatures during geothermal drilling.

  18. Recent Developments of Magnetoresistive Sensors for Industrial Applications.

    Science.gov (United States)

    Jogschies, Lisa; Klaas, Daniel; Kruppe, Rahel; Rittinger, Johannes; Taptimthong, Piriya; Wienecke, Anja; Rissing, Lutz; Wurz, Marc Christopher

    2015-11-12

    The research and development in the field of magnetoresistive sensors has played an important role in the last few decades. Here, the authors give an introduction to the fundamentals of the anisotropic magnetoresistive (AMR) and the giant magnetoresistive (GMR) effect as well as an overview of various types of sensors in industrial applications. In addition, the authors present their recent work in this field, ranging from sensor systems fabricated on traditional substrate materials like silicon (Si), over new fabrication techniques for magnetoresistive sensors on flexible substrates for special applications, e.g., a flexible write head for component integrated data storage, micro-stamping of sensors on arbitrary surfaces or three dimensional sensing under extreme conditions (restricted mounting space in motor air gap, high temperatures during geothermal drilling).

  19. The suppression of the large magnetoresistance in thin WTe2

    Science.gov (United States)

    Shen, Jie; Woods, John; Cha, Judy

    The layered nature of WTe2 suggests the possibility of making a single layer WTe2 memory device that exploits the recently observed large magnetoresistance. Presently, the origin of the magnetoresistance is attributed to the charge balance between the electron and hole carriers, yet the exact underlying physical mechanism is unclear. Here we show a systematic suppression of the large magnetoresistance, as well as turn-on temperature, with decreasing thickness of WTe2. We attribute the thickness-dependent transport properties to undesirable parasitic effects that become dominant in thin films of WTe2. Our results highlight the increasing importance of characterizing the parasitic effects for 2D layered materials in a single- to a few-layer thick limit. Finally, our observations support the hypothesis that the origin of the large magnetoresistance may be due to the charge balance between the electron and the hole carriers.

  20. Electrical Resistance and Magnetoresistance of Modified Carbon Nanotubes

    Directory of Open Access Journals (Sweden)

    T.A. Len

    2014-11-01

    Full Text Available The paper presents the results of the experimental studies of the magnetoresistance and electrical resistance of carbon nanotubes modified with iron and iron oxide. A comprehensive study of the processes, which act with change in the temperature of modified CNTs, is performed. Joint analysis of the structural studies and electrical transport characteristics is enabled to explain new and interesting results. It is established that modification with iron has little effect on the electrical resistance. On the other hand, modification is strongly reflected on the ferromagnetic resistance anisotropy. It is shown that the localization mechanism and anisotropic magnetoresistance are manifested in magnetoresistance. Anisotropic magnetoresistance arises due to the features of magnetization of ferromagnetic phase in an external magnetic field.

  1. Effect of quantum tunneling on spin Hall magnetoresistance

    Science.gov (United States)

    Ok, Seulgi; Chen, Wei; Sigrist, Manfred; Manske, Dirk

    2017-02-01

    We present a formalism that simultaneously incorporates the effect of quantum tunneling and spin diffusion on the spin Hall magnetoresistance observed in normal metal/ferromagnetic insulator bilayers (such as Pt/Y3Fe5O12) and normal metal/ferromagnetic metal bilayers (such as Pt/Co), in which the angle of magnetization influences the magnetoresistance of the normal metal. In the normal metal side the spin diffusion is known to affect the landscape of the spin accumulation caused by spin Hall effect and subsequently the magnetoresistance, while on the ferromagnet side the quantum tunneling effect is detrimental to the interface spin current which also affects the spin accumulation. The influence of generic material properties such as spin diffusion length, layer thickness, interface coupling, and insulating gap can be quantified in a unified manner, and experiments that reveal the quantum feature of the magnetoresistance are suggested.

  2. Facilities of management magnetoresistive transformer of active power

    Directory of Open Access Journals (Sweden)

    Val. S. Vuntesmeri

    2009-03-01

    Full Text Available Management facilities are considered, spectral composition is certain and the form of коммутируемого signal of magnetoresistive transformer of active power is rotined.

  3. Combining CPP-ACP with fluoride: a synergistic remineralization potential of artificially demineralized enamel or not?

    Science.gov (United States)

    El-Sayad, I. I.; Sakr, A. K.; Badr, Y. A.

    2008-08-01

    Background and objective: Minimal intervention dentistry (MID) calls for early detection and remineralization of initial demineralization. Laser fluorescence is efficient in detecting changes in mineral tooth content. Recaldent is a product of casein phosphopeptide-amorphous calcium phosphate (CPP- ACP) which delivers calcium and phosphate ions to enamel. A new product which also contains fluoride is launched in United States. The remineralizing potential of CPP- ACP per se, or when combined with 0.22% Fl supplied in an oral care gel on artificially demineralised enamel using laser fluorescence was investigated. Methods: Fifteen sound human molars were selected. Mesial surfaces were tested using He-Cd laser beam at 441.5nm with 18mW power as excitation source on a suitable set-up based on Spex 750 M monochromator provided with PMT for detection of collected auto-fluorescence from sound enamel. Mesial surfaces were subjected to demineralization for ten days. The spectra from demineralized enamel were measured. Teeth were then divided according to the remineralizing regimen into three groups: group I recaldent per se, group II recaldent combined with fluoride gel and group III artificial saliva as a positive control. After following these protocols for three weeks, the spectra from remineralized enamel from the three groups were measured. The spectra of enamel auto-fluorescence were recorded and normalized to peak intensity at about 540 nm to compare between spectra from sound, demineralized and remineralized enamel surfaces. Results: A slight red shift was noticed in spectra from demineralized enamel, while a blue shift may occur in remineralized enamel. Group II showed the highest remineralizing potential. Conclusions: Combining fluoride with CPP-ACP had a synergistic effect on enamel remineralization. In addition, laser auto-fluorescence is an accurate technique for assessment of changes in tooth enamel minerals.

  4. Protective effect of calcium nanophosphate and CPP-ACP agents on enamel erosion

    Directory of Open Access Journals (Sweden)

    Fabiola Galbiatti de Carvalho

    2013-12-01

    Full Text Available The aim of this study was to assess the effect of different remineralizing agents on enamel microhardness (KHN and surface topography after an erosive challenge. Forty-eight human enamel specimens (4 × 4 mm were randomly assigned to 4 groups: control (no treatment, fluoride varnish, calcium nanophosphate paste and casein phosphopeptide-amorphous calcium phosphate paste (CPP-ACP. Both pastes were applied for 5 minutes, and fluoride varnish, for 24 h. Four daily erosive cycles of 5 minutes of immersion in a cola drink and 2 h in artificial saliva were conducted for 5 days. KHN readings were performed at baseline and after 5 days. The percentage of enamel hardness change (%KHN was obtained after erosion. The surface topography was evaluated by atomic force microscopy (AFM. The data were tested using ANOVA, Tukey's and paired-T tests (p < 0.05. After an erosive challenge, there was no statistically significant difference between the control (96.8 ± 11.4 KHN / 72.4 ± 3.0 %KHN and the varnish (91.7 ± 14.1 KHN / 73.4 ± 5.5 %KHN groups. The nanophosphate group showed lower enamel hardness loss (187.2 ± 27.9 / 49.0 ± 7.9 %KHN, compared with the CPP-ACP group (141.8 ± 16.5 / 60.6 ± 4.0 %KHN, and both were statistically different from the varnish and the control groups. AFM images showed a rough surface for the control and the varnish groups, a non-homogeneous layer with globular irregularities for CPP-ACP, and a thick homogeneous layer for the nanophosphate group. None of the agents provided protection against the development of erosion; however, nanophosphate paste was able to reduce enamel surface softening after the erosive challenge

  5. Protective effect of calcium nanophosphate and CPP-ACP agents on enamel erosion

    Energy Technology Data Exchange (ETDEWEB)

    Carvalho, Fabiola Galbiatti de; Santos, Rogerio Lacerda dos, E-mail: fabigalbi@yahoo.com.br [Universidade Federal de Campina Grande (UFCG), Patos, PB (Brazil). Dept. de Ciencias Biologicas. Div. de Odontologia; Silva Filho, Tiago Joao da; Carlo, Hugo Lemes [Universidade Federal da Paraiba (UFPB), Joao Pessoa, PB (Brazil). Centro de Ciencias da Saude. Dept. de Odontologia Restauradora; Lima, Bruno Alessandro Silva Guedes de [Universidade Federal da Paraiba (UFPB), Joao Pessoa, PB (Brazil). Dept. de Tecnologia Mecanica. Lab. de Solidificacao Rapida

    2013-11-15

    The aim of this study was to assess the effect of different remineralizing agents on enamel microhardness (KHN) and surface topography after an erosive challenge. Forty-eight human enamel specimens (4 X 4 mm) were randomly assigned to 4 groups: control (no treatment), fluoride varnish, calcium nanophosphate paste and casein phosphopeptide-amorphous calcium phosphate paste (CPP-ACP). Both pastes were applied for 5 minutes, and fluoride varnish, for 24 h. Four daily erosive cycles of 5 minutes of immersion in a cola drink and 2 h in artificial saliva were conducted for 5 days. KHN readings were performed at baseline and after 5 days. The percentage of enamel hardness change (%KHN) was obtained after erosion. The surface topography was evaluated by atomic force microscopy (AFM). The data were tested using ANOVA, Tukey's and paired-T tests (p < 0.05). After an erosive challenge, there was no statistically significant difference between the control (96.8 ± 11.4 KHN / 72.4 ± 3.0 %KHN) and the varnish (91.7 ± 14.1 KHN / 73.4 ± 5.5 %KHN) groups. The nanophosphate group showed lower enamel hardness loss (187.2 ± 27.9 /49.0 ± 7.9 %KHN), compared with the CPP-ACP group (141.8 ± 16.5 /60.6 ± 4.0 %KHN), and both were statistically different from the varnish and the control groups. AFM images showed a rough surface for the control and the varnish groups, a non-homogeneous layer with globular irregularities for CPP-ACP, and a thick homogeneous layer for the nanophosphate group. None of the agents provided protection against the development of erosion; however, nanophosphate paste was able to reduce enamel surface softening after the erosive challenge. (author)

  6. Sign control of magnetoresistance through chemically engineered interfaces.

    Science.gov (United States)

    Ciudad, David; Gobbi, Marco; Kinane, Christy J; Eich, Marius; Moodera, Jagadeesh S; Hueso, Luis E

    2014-12-03

    Chemically engineered interfaces are shown to produce inversions of the magnetoresistance in spintronic devices including lithium fluoride interlayers. This behavior is explained by the formation of anti-ferromagnetic difluoride layers. By changing the order of deposition of the different materials, the sign of the magnetoresistance can be deterministically controlled both in organic spin valves and in inorganic magnetic tunnel junctions. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  7. Large tunneling magnetoresistance in octahedral Fe3O4 nanoparticles

    OpenAIRE

    Arijit Mitra; Barun Barick; Jeotikanta Mohapatra; Sharma, H.; Meena, S. S.; ASLAM, M.

    2016-01-01

    We have observed large tunneling Magnetoresistance (TMR) in amine functionalized octahedral nanoparticle assemblies. Amine monolayer on the surface of nanoparticles acts as an insulating barrier between the semimetal Fe3O4 nanoparticles and provides multiple tunnel junctions where inter-granular tunneling is plausible. The tunneling magnetoresistance recorded at room temperature is 38% which increases to 69% at 180 K. When the temperature drops below 150 K, coulomb staircase is observed in th...

  8. A two-site bipolaron model for organic magnetoresistance

    Science.gov (United States)

    Wagemans, W.; Bloom, F. L.; Bobbert, P. A.; Wohlgenannt, M.; Koopmans, B.

    2008-04-01

    The recently proposed bipolaron model for large "organic magnetoresistance" (OMAR) at room temperature is extended to an analytically solvable two-site scheme. It is shown that even this extremely simplified approach reproduces some of the key features of OMAR, viz., the possibility to have both positive and negative magnetoresistance, as well as its universal line shapes. Specific behavior and limiting cases are discussed. Extensions of the model, to guide future experiments and numerical Monte Carlo studies, are suggested.

  9. Quantum conductance in electrodeposited nanocontacts and magnetoresistance measurements

    DEFF Research Database (Denmark)

    Elhoussine, F.; Encinas, A.; Mátéfi-Tempfli, Stefan

    2003-01-01

    The conductance and magnetoresistance measurements in magnetic Ni-Ni and Co-Ni nanocontacts prepared by electrodeposition within the pores of a track of track-etched polymer membrane were discussed. At room temperature, Ni-Ni constrictions were found to show broad quantization plateaus of conduct...... of conductance during their dissolution in units of e/h, as expected for ferromagnetic ballistic nanocontacts. The measurement of the positive and negative magnetoresistance in Co-Ni nanocontacts was also elaborated....

  10. Changes in the Concentration of Ions in Saliva and Dental Plaque after Application of CPP-ACP with and without Fluoride among 6-9 Year Old Children

    Directory of Open Access Journals (Sweden)

    Poureslami H

    2017-03-01

    Full Text Available Statement of Problem: The casein phospho peptide-amorphous calcium phosphate with or without fluoride (CPP-ACPF and CPP-ACP respectively are of considerably new materials which are highly recommended for prevention of dental caries. However, there is a shortage in literature on how they affect the ion concentration of saliva or dental plaque. Objectives: The aim of this study was to evaluate the concentration of calcium, phosphate and fluoride in the plaque and saliva of children with Early Childhood Caries (ECC after applying the CPP-ACP paste in comparison with the use of CPP- ACPF paste. Materials and Methods: One ml of un-stimulated saliva of 25 preschool children was collected and then 1 mg of the plaque sample was collected from the buccal surfaces of the two first primary molars on the upper jaw. CPP-ACP as well as CPP- ACPF pastes were applied on the tooth surfaces in two separate steps. In steps, plaque and saliva sampling was performed after 60 minutes. The amount of calcium ions was measured by Atomic Absorption Device and the amount of phosphate and fluoride ions was measured by Ion Chromatography instrument. Data were analyzed using Repeated Measurements ANOVA at a p < 0.05 level of significance. Results: Application of both CPP-ACPF and CPP-ACP significantly increased the concentration of calcium, phosphate, and fluoride in both saliva and dental plaque. Moreover, significantly higher salivary fluoride concentration was seen after application of CPP-ACPF compared to CPP-ACP. No other significant difference was observed between these two materials. Conclusions: CPP-ACPF can be more useful than CPP-ACP in protecting the primary teeth against caries process, especially when there is poor hygiene.

  11. CPP1, a DNA-binding protein involved in the expression of a soybean leghemoglobin c3 gene

    Science.gov (United States)

    Cvitanich, Cristina; Pallisgaard, Niels; Nielsen, Kirsten A.; Hansen, Anette Chemnitz; Larsen, Knud; Pihakaski-Maunsbach, Kaarina; Marcker, Kjeld A.; Jensen, Erik Østergaard

    2000-01-01

    Nodulin genes are specifically expressed in the nitrogen-fixing root nodules. We have identified a novel type of DNA-binding protein (CPP1) interacting with the promoter of the soybean leghemoglobin gene Gmlbc3. The DNA-binding domain of CPP1 contains two similar Cys-rich domains with 9 and 10 Cys, respectively. Genes encoding similar domains have been identified in Arabidopsis thaliana, Caenorhabditis elegans, the mouse, and human. The domains also have some homology to a Cys-rich region present in some polycomb proteins. The cpp1 gene is induced late in nodule development and the expression is confined to the distal part of the central infected tissue of the nodule. A constitutively expressed cpp1 gene reduces the expression of a Gmlbc3 promoter–gusA reporter construct in Vicia hirsuta roots. These data therefore suggest that CPP1 might be involved in the regulation of the leghemoglobin genes in the symbiotic root nodule. PMID:10859345

  12. Evaluation of the remineralization capacity of CPP-ACP containing fluoride varnish by different quantitative methods

    Directory of Open Access Journals (Sweden)

    Selcuk SAVAS

    Full Text Available ABSTRACT Objective The aim of this study was to evaluate the efficacy of CPP-ACP containing fluoride varnish for remineralizing white spot lesions (WSLs with four different quantitative methods. Material and Methods Four windows (3x3 mm were created on the enamel surfaces of bovine incisor teeth. A control window was covered with nail varnish, and WSLs were created on the other windows (after demineralization, first week and fourth week in acidified gel system. The test material (MI Varnish was applied on the demineralized areas, and the treated enamel samples were stored in artificial saliva. At the fourth week, the enamel surfaces were tested by surface microhardness (SMH, quantitative light-induced fluorescence-digital (QLF-D, energy-dispersive spectroscopy (EDS and laser fluorescence (LF pen. The data were statistically analyzed (α=0.05. Results While the LF pen measurements showed significant differences at baseline, after demineralization, and after the one-week remineralization period (p0.05. With regards to the SMH and QLF-D analyses, statistically significant differences were found among all the phases (p<0.05. After the 1- and 4-week treatment periods, the calcium (Ca and phosphate (P concentrations and Ca/P ratio were higher compared to those of the demineralization surfaces (p<0.05. Conclusion CPP-ACP containing fluoride varnish provides remineralization of WSLs after a single application and seems suitable for clinical use.

  13. Distribution of CPP-Protein Complexes in Freshly Resected Human Tissue Material

    Directory of Open Access Journals (Sweden)

    Ülo Langel

    2010-03-01

    Full Text Available Interest in cell-penetrating peptides (CPPs as delivery agents has fuelled a large number of studies conducted on cultured cells and in mice. However, only a few studies have been devoted to the behaviour of CPPs in human tissues. Therefore, we performed ex vivo tissue-dipping experiments where we studied the distribution of CPP-protein complexes in samples of freshly harvested human tissue material. We used the carcinoma or hyperplasia-containing specimens of the uterus and the cervix, obtained as surgical waste from nine hysterectomies. Our aim was to evaluate the tissue of preference (epithelial versus muscular/connective tissue, carcinoma versus adjacent histologically normal tissue for two well-studied CPPs, the transportan and the TAT-peptide. We complexed biotinylated CPPs with avidin--galactosidase (ABG, which enabled us to apply whole-mount X-gal staining as a robust detection method. Our results demonstrate that both peptides enhanced the tissue distribution of ABG. The enhancing effect of the tested CPPs was more obvious in the normal tissue and in some specimens we detected a striking selectivity of CPP-ABG complexes for the normal tissue. This unexpected finding encourages the evaluation of CPPs as local delivery agents in non-malignant situations, for example in the intrauterine gene therapy of benign gynaecological diseases.

  14. Anisotropic Magnetoresistance and Anisotropic Tunneling Magnetoresistance due to Quantum Interference in Ferromagnetic Metal Break Junctions

    DEFF Research Database (Denmark)

    Bolotin, Kirill; Kuemmeth, Ferdinand; Ralph, D

    2006-01-01

    We measure the low-temperature resistance of permalloy break junctions as a function of contact size and the magnetic field angle in applied fields large enough to saturate the magnetization. For both nanometer-scale metallic contacts and tunneling devices we observe large changes in resistance...... with the angle, as large as 25% in the tunneling regime. The pattern of magnetoresistance is sensitive to changes in bias on a scale of a few mV. We interpret the effect as a consequence of conductance fluctuations due to quantum interference....

  15. Sign reversal of junction magnetoresistance in p-La0.7Ca0.3MnO3/SiO2/n-Si heterostructure: a possibility in spintronics application.

    Science.gov (United States)

    Giri, S K; Nath, T K

    2012-10-01

    We have fabricated a p-La0.7Ca0.3MnO3/SiO2/n-Si heterostructure, consisting of a p-type manganite (La0.7Ca0.3MnO3) and n-type Si with a interfacial layer of SiO2 with typical thickness of about 9 nm using pulsed laser deposition technique. The junction exhibits rectifying behavior over the temperature range of 10-300 K with rectification factor 52 at room temperature. Investigation on the electrical properties of p-La0.7Ca0.3MnO3/SiO2/n-Si heterostructure exhibits nonlinear J-V characteristics in a wide temperature range. A crossover from negative to positive junction magnetoresistance (JMR) is observed in p-La0.7Ca0.3MnO3/SiO2/n-Si heterostructure in current perpendicular to film plane (CPP) geometry. The temperature dependent sign of junction magnetoresistance of the heterojunction has been investigated carefully in details. It is found that the junction exhibits the positive junction magnetoresistance when the temperature is greater than the ferromagnetic to paramagnetic transition temperature (Tc) of the top highly spin-polarized half-metallic ferromagnetic La0.7Ca0.3MnO3 manganite film layer. The relation between junction magnetoresistance and external magnetic field is found to be of (delta rho/rho approximately equal alphaHbeta) type having both alpha and beta temperature dependent. We attribute the emergence of negative JMR at lower temperature ( Tc) to the quantum mechanical tunneling transport mechanism across the heterojunction. Our results might be very useful to fabricate artificial devices using the manganite-based heterojunction grown on single crystalline n-Si (100) in spintronics device applications.

  16. Učinak fluoridnih gelova i lakova na demineralizaciju/remineralizaciju cakline u usporedbi s kompleksom CPP-ACP

    OpenAIRE

    Ambarkova, Vesna; Goršeta, Kristina; Jankolovska, Mira; Glavina, Domagoj; Škrinjarić, Ilija

    2013-01-01

    Svrha: Cilj ovog in vitro istraživanja bio je utvrditi učinak fluoridnih gelova i lakova u odnosu na CPP-ACP kompleks na sprječavanje demineralizacije cakline. Materijali i Metode: Caklinski blokovi su ispolirani, podijeljeni u osam grupa i izloženi dnevnom cikličkom režimu. Tri skupine su tretirane 10 minuta s fluoridnim gelovima: Fluorogal, Fluor Protector Gel and Cervitec Gel, jedna je tretirana samo s GC Tooth Mousse i jedna je tretirana s GC Tooth Mousse (Recaldent CPP-ACP 10.0%).. Preos...

  17. Positive magnetoresistance in Ca-doped cobaltites

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, S. M., E-mail: zhousm@ustc.edu.cn; Li, Y.; Guo, Y. Q.; Zhao, J. Y.; Shi, L., E-mail: shil@ustc.edu.cn [Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei, Anhui 230026 (China)

    2014-12-08

    Transport properties of polycrystalline La{sub 1−x}Ca{sub x}CoO{sub 3} (0.10 ≤ x ≤ 0.25) are systemically studied in this work. Three types of magnetoresistance (MR) effects are found in the Ca-doped cobaltites. Two negative MRs appear around high-temperature ferromagnetic transition and at low temperatures, which correspond to the conventional MR due to the field-induced suppression of spin-disorder scattering and the intergranular giant-MR due to spin-dependent transport between the ferromagnetic clusters, respectively. More interestingly, another exotic positive MR emerges at intermediate temperature region, which had not been previously reported in Sr- and Ba-doped cobaltites. It is found that this positive MR is associated with an abnormally magnetic transition and increases with the increase of x. For x = 0.25, the MR at low temperatures is dominated by the positive one, which is isotropic and nearly linear with the magnetic field. The possible origin of the positive MR in the Ca-doped cobaltites is discussed.

  18. Noncontact vibration measurements using magnetoresistive sensing elements

    Science.gov (United States)

    Tomassini, R.; Rossi, G.

    2016-06-01

    Contactless instrumentations is more and more used in turbomachinery testing thanks to the non-intrusive character and the possibility to monitor all the components of the machine at the same time. Performances of blade tip timing (BTT) measurement systems, used for noncontact turbine blade vibration measurements, in terms of uncertainty and resolution are strongly affected by sensor characteristics and processing methods. The sensors used for BTT generate pulses, used for precise measurements of turbine blades time of arrival. Nowadays proximity sensors used in this application are based on optical, capacitive, eddy current and microwave measuring principle. Pressure sensors has been also tried. This paper summarizes the results achieved using a novel instrumentation based on the magnetoresistive sensing elements. The characterization of the novel probe has been already published. The measurement system was validated in test benches and in a real jet-engine comparing different sensor technologies. The whole instrumentation was improved. The work presented in this paper focuses on the current developments. In particular, attention is given to the data processing software and new sensor configurations.

  19. Transport properties of colossal magnetoresistive materials

    CERN Document Server

    Yates, K A

    2002-01-01

    A microwave technique was developed in order to test the validity of the hypothesis that the microwave transport of polycrystalline, optimally doped, colossal magnetoresistive materials was dominated by intragranular material. The microwave surface resistance at 9GHz was compared with dc resistivity and magnetisation to study the influence of yttrium doping on the grain boundary regions of bulk polycrystalline samples of La sub 0 sub . sub 7 sub - sub x Y sub x Ca sub 0 sub . sub 3 MnO sub 3. It was found that, within the grains, the addition of yttrium causes the activation energy above T sub p to increase. A phenomenological model was introduced to explain the data in terms of the difference in structure between the grain and grain boundary regions. The technique was also used to study the influence of deoxygenation on the grain boundary regions of bulk, polycrystalline, La sub 0 sub . sub 6 sub 7 Ca sub 0 sub . sub 3 sub 3 MnO sub 3. For samples interconnected porosity, low temperature (600 deg C), short a...

  20. Tunneling magnetoresistance phenomenon utilizing graphene magnet electrode

    Energy Technology Data Exchange (ETDEWEB)

    Hashimoto, T.; Kamikawa, S.; Haruyama, J., E-mail: J-haru@ee.aoyama.ac.jp [Faculty of Science and Engineering, Aoyama Gakuin University, 5-10-1 Fuchinobe, Sagamihara, Kanagawa 252-5258 (Japan); Soriano, D. [Institut Català de Nanociència i Nanotecnologia (ICN2), Campus de la UAB, Edifici ICN2, 08193 Bellaterra, Barcelona (Spain); Pedersen, J. G. [Institut Català de Nanociència i Nanotecnologia (ICN2), Campus de la UAB, Edifici ICN2, 08193 Bellaterra, Barcelona (Spain); Department of Micro-and Nanotechnology, DTU Nanotech, Technical University of Denmark, DK-2800 Kongens Lyngby (Denmark); Roche, S. [Institut Català de Nanociència i Nanotecnologia (ICN2), Campus de la UAB, Edifici ICN2, 08193 Bellaterra, Barcelona (Spain); ICREA - Institucio Catalana de Recerca i Estudis Avancats, 08010 Barcelona (Spain)

    2014-11-03

    Using magnetic rare-metals for spintronic devices is facing serious problems for the environmental contamination and the limited material-resource. In contrast, by fabricating ferromagnetic graphene nanopore arrays (FGNPAs) consisting of honeycomb-like array of hexagonal nanopores with hydrogen-terminated zigzag-type atomic structure edges, we reported observation of polarized electron spins spontaneously driven from the pore edge states, resulting in rare-metal-free flat-energy-band ferromagnetism. Here, we demonstrate observation of tunneling magnetoresistance (TMR) behaviors on the junction of cobalt/SiO{sub 2}/FGNPA electrode, serving as a prototype structure for future rare-metal free TMR devices using magnetic graphene electrodes. Gradual change in TMR ratios is observed across zero-magnetic field, arising from specified alignment between pore-edge- and cobalt-spins. The TMR ratios can be controlled by applying back-gate voltage and by modulating interpore distance. Annealing the SiO{sub 2}/FGNPA junction also drastically enhances TMR ratios up to ∼100%.

  1. Planar Hall magnetoresistive aptasensor for thrombin detection.

    Science.gov (United States)

    Sinha, B; Ramulu, T S; Kim, K W; Venu, R; Lee, J J; Kim, C G

    2014-09-15

    The use of aptamer-based assays is an emerging and attractive approach in disease research and clinical diagnostics. A sensitive aptamer-based sandwich-type sensor is presented to detect human thrombin using a planar Hall magnetoresistive (PHR) sensor in cooperation with superparamagnetic labels. A PHR sensor has the great advantages of a high signal-to-noise ratio, a small offset voltage and linear response in the low-field region, allowing it to act as a high-resolution biosensor. In the system presented here, the sensor has an active area of 50 µm × 50 µm with a 10-nm gold layer deposited onto the sensor surface prior to the binding of thiolated DNA primary aptamer. A polydimethylsiloxane well of 600-µm radius and 1-mm height was prepared around the sensor surface to maintain the same specific area and volume for each sensor. The sensor response was traced in real time upon the addition of streptavidin-functionalized magnetic labels on the sensor. A linear response to the thrombin concentration in the range of 86 pM-8.6 µM and a lower detection limit down to 86 pM was achieved by the proposed present method with a sample volume consumption of 2 µl. The proposed aptasensor has a strong potential for application in clinical diagnosis.

  2. Nodal Quasiparticle in Pseudogapped Colossal Magnetoresistive Manganites

    Energy Technology Data Exchange (ETDEWEB)

    Mannella, N.

    2010-06-02

    A characteristic feature of the copper oxide high-temperature superconductors is the dichotomy between the electronic excitations along the nodal (diagonal) and antinodal (parallel to the Cu-O bonds) directions in momentum space, generally assumed to be linked to the d-wave symmetry of the superconducting state. Angle-resolved photoemission measurements in the superconducting state have revealed a quasiparticle spectrum with a d-wave gap structure that exhibits a maximum along the antinodal direction and vanishes along the nodal direction. Subsequent measurements have shown that, at low doping levels, this gap structure persists even in the high-temperature metallic state, although the nodal points of the superconducting state spread out in finite Fermi arcs. This is the so-called pseudogap phase, and it has been assumed that it is closely linked to the superconducting state, either by assigning it to fluctuating superconductivity or by invoking orders which are natural competitors of d-wave superconductors. Here we report experimental evidence that a very similar pseudogap state with a nodal-antinodal dichotomous character exists in a system that is markedly different from a superconductor: the ferromagnetic metallic groundstate of the colossal magnetoresistive bilayer manganite La{sub 1.2}Sr{sub 1.8}Mn{sub 2}O{sub 7}. Our findings therefore cast doubt on the assumption that the pseudogap state in the copper oxides and the nodal-antinodal dichotomy are hallmarks of the superconductivity state.

  3. Superconducting magnetoresistance in ferromagnet/superconductor/ferromagnet trilayers.

    Science.gov (United States)

    Stamopoulos, D; Aristomenopoulou, E

    2015-01-01

    Magnetoresistance is a multifaceted effect reflecting the diverse transport mechanisms exhibited by different kinds of plain materials and hybrid nanostructures; among other, giant, colossal, and extraordinary magnetoresistance versions exist, with the notation indicative of the intensity. Here we report on the superconducting magnetoresistance observed in ferromagnet/superconductor/ferromagnet trilayers, namely Co/Nb/Co trilayers, subjected to a parallel external magnetic field equal to the coercive field. By manipulating the transverse stray dipolar fields that originate from the out-of-plane magnetic domains of the outer layers that develop at coercivity, we can suppress the supercurrent of the interlayer. We experimentally demonstrate a scaling of the magnetoresistance magnitude that we reproduce with a closed-form phenomenological formula that incorporates relevant macroscopic parameters and microscopic length scales of the superconducting and ferromagnetic structural units. The generic approach introduced here can be used to design novel cryogenic devices that completely switch the supercurrent 'on' and 'off', thus exhibiting the ultimate magnetoresistance magnitude 100% on a regular basis.

  4. Expression of CPP32 and P53 protein in brain after focal cerebral ischemia in rats%大鼠局灶性脑缺血后CPP32和P53蛋白的表达

    Institute of Scientific and Technical Information of China (English)

    张拥波; 董为伟

    2002-01-01

    目的探讨大鼠脑缺血后神经元损害过程中CPP32和P53蛋白表达的变化.方法建立大鼠大脑中动脉闭塞(MCAO 2 h)模型, 采用免疫组化方法观察CPP32和P53蛋白在大鼠脑缺血后不同时间的动态变化.结果 CPP32蛋白在脑缺血再灌注22 h和46 h, 阳性表达最明显.而P53在脑缺血再灌注22 h阳性表达最明显, 并持续至再灌注70 h.阳性表达主要位于神经元严重受损的缺血区内.结论 CPP32和P53蛋白表达与脑缺血后神经细胞死亡关系密切.

  5. A 12-Week Assessment of the Treatment of White Spot Lesions with CPP-ACP Paste and/or Fluoride Varnish.

    Science.gov (United States)

    Güçlü, Zeynep Aslı; Alaçam, Alev; Coleman, Nichola Jayne

    2016-01-01

    This 12-week clinical study evaluated the impact of 10% CPP-ACP and 5% sodium fluoride varnish regimes on the regression of nonorthodontic white spot lesions (WSLs). The study included 21 children with 101 WSLs who were randomised into four treatment regimes: weekly clinical applications of fluoride varnish for the first month (FV); twice daily self-applications of CPP-ACP paste (CPP-ACP); weekly applications of fluoride varnish for the first month and twice daily self-applications of CPP-ACP paste (CPP-ACP-FV); and no intervention (control). All groups undertook a standard oral hygiene protocol and weekly consultation. Visual appraisals and laser fluorescence (LF) measurements were made in weeks one and twelve. The majority of WSLs in the control and FV groups exhibited no shift in appearance, whereas, in the CPP-ACP and CPP-ACP-FV groups, the lesions predominantly regressed. The visual and LF assessments indicated that the extent of remineralisation afforded by the treatments was of the following order: control ~ FV fluoride varnish as a supplement to either the standard or CPP-ACP-enhanced oral hygiene regimes.

  6. Studies of colossal magnetoresistive oxides with radioactive isotopes

    CERN Document Server

    CERN. Geneva. ISOLDE and Neutron Time-of-Flight Experiments Committee; Amaral, V S; Araújo, J P; Butz, T; Correia, J G; Dubourdieu, C; Habermeier, H U; Lourenço, A A; Marques, J G; Da Silva, M F A; Senateur, J P; Soares, J C; Sousa, J B; Suryan, R; Tokura, Y; Tavares, P B; Tomioka, Y; Tröger, W; Vantomme, A; Vieira, J M; Wahl, U; Weiss, F P; INTC

    2000-01-01

    We propose to study Colossal Magnetoresistive (CMR) oxides with several nuclear techniques, which use radioactive elements at ISOLDE. Our aim is to provide local and element selective information on some of the doping mechanisms that rule electronic interactions and magnetoresistance, in a complementary way to the use of conventional characterisation techniques. Three main topics are proposed: \\\\ \\\\ a) Studies of local [charge and] structural modifications in antiferromagnetic LaMnO$_{3+ \\delta}$ and La$_{1-x}$R$_{x}$MnO$_{3}$ with R=Ca and Cd, doped ferromagnetic systems with competing interactions: - research on the lattice site and electronic characterisation of the doping element. \\\\ \\\\ b) Studies of self doped La$_{x}$R$_{1-x}$MnO$_{3+\\delta}$ systems, with oxygen and cation non-stoichiometry: -learning the role of defects in the optimisation of magnetoresistive properties. \\\\ \\\\ c) Probing the disorder and quenched random field effects in the vicinity of the charge or orbital Ordered/Ferromagnetic phase...

  7. Serotonin dysregulation in adolescents with major depression: hormone response to meta-chlorophenylpiperazine (mCPP) infusion.

    Science.gov (United States)

    Ghaziuddin, N; King, C A; Welch, K B; Zaccagnini, J; Weidmer-Mikhail, E; Mellow, A M; Ghaziuddin, M; Greden, J F

    2000-09-11

    This study examined central serotonin disturbance, as reflected by neuroendocrine hormones, among adolescents with major depression. Prolactin, cortisol, and growth hormone were measured following the infusion of a serotonin agonist, meta-chlorophenylpiperazine (mCPP). Twelve (M=6, F=6) medication-free adolescents with major depression (MDD) were compared with 12 (M=6, F=6) matched normal control subjects, ranging in age from 13 to 17 years. Baseline evaluations and a battery of laboratory tests were completed. mCPP, 0.1 mg/kg i. v., was administered in a placebo-controlled design. Analyses of the neuroendocrine hormones revealed that the depressed group had a higher baseline prolactin level and an augmented prolactin response to mCPP challenge than did the control group. The depressed group experienced a sharper baseline-cortisol decline between 08.00 and 11.00 h, and compared to control subjects they displayed an augmented response to the challenge. The depressed group reported more side effects than the control group during saline infusion, but not during mCPP infusion. Findings suggest that depressed adolescents have an elevated baseline prolactin level, and also experience enhanced prolactin and cortisol responses to the serotonergic challenge. These preliminary findings will be confirmed during our ongoing study.

  8. Decreased neuroendocrine responses to meta-chlorophenylpiperazine (m-CPP) but normal responses to ipsapirone in marathon runners.

    Science.gov (United States)

    Broocks, A; Meyer, T; George, A; Hillmer-Vogel, U; Meyer, D; Bandelow, B; Hajak, G; Bartmann, U; Gleiter, C H; Rüther, E

    1999-02-01

    Several clinical studies suggest antidepressive and anxiolytic effects of regular aerobic exercise. To study the effects of exercise on central serotonergic receptor sensitivity, we performed neuroendocrine challenges using oral doses of meta-chlorophenylpiperazine (m-CPP, 0.4 mg/kg), ipsapirone (0.3 mg/kg) and placebo in 12 marathon runners and 12 healthy controls not practicing regular exercise. After administration of the nonselective serotonergic agonist m-CPP, which exerts a number of well-reproducible effects mainly by means of its action on 5-HT2C receptors, marathon runners showed a significantly reduced cortisol response in comparison to the control group. There was also a statistical trend toward a blunted prolactin response after m-CPP in the athlete group. In contrast, the increase of cortisol and the hypothermia observed after administration of the 5-HT1A agonist ipsapirone were of the same magnitude in both groups. The behavioral response to m-CPP or ipsapirone and the mean maximal increases of plasma adrenaline and noradrenaline did not differ between the marathon and the control group. In conclusion, exercise-induced downregulation of 5-HT2C receptors could play an important role in mediating the anxiolytic and antidepressive effects of exercise.

  9. Negative and nonlinear magnetoresistance effect in silicon strip

    CERN Document Server

    Wang, Fangcong; Guo, Hui; Fan, Xiaolong; Li, Zhankui

    2016-01-01

    Both negative magnetoresistance and nonlinear magnetoresisitance were observed in silicon strip nuclear radiation detector in room temperature if we applied high magnetic field intensity in different direction. This result is different with former report. We believe this is the result of coaction of high electric field (Gunn effect) and high magnetic field, or because of the variation of number of carriers and the carriers mobility. The weak localization and Landau energy levels also affect the magnetoresistance. Different crystal orientations have different energy band structures. Complex band structures lead complex carriers mobility plus Landau energy levels. So the magnetoresisitance effect is anisotropy.

  10. Single nucleotide polymorphism (SNP) detection on a magnetoresistive sensor

    DEFF Research Database (Denmark)

    Rizzi, Giovanni; Østerberg, Frederik Westergaard; Dufva, Martin

    2013-01-01

    We present a magnetoresistive sensor platform for hybridization assays and demonstrate its applicability on single nucleotide polymorphism (SNP) genotyping. The sensor relies on anisotropic magnetoresistance in a new geometry with a local negative reference and uses the magnetic field from...... the sensor bias current to magnetize magnetic beads in the vicinity of the sensor. The method allows for real-time measurements of the specific bead binding to the sensor surface during DNA hybridization and washing. Compared to other magnetic biosensing platforms, our approach eliminates the need...... for external electromagnets and thus allows for miniaturization of the sensor platform....

  11. Magnetoresistance of Mn-decorated topological line defects in graphene

    KAUST Repository

    Obodo, Tobechukwu Joshua

    2015-01-13

    We study the spin polarized transport through Mn-decorated 8-5-5-8 topological line defects in graphene using the nonequilibrium Green\\'s function formalism. Strong preferential bonding overcomes the high mobility of transition metal atoms on graphene and results in stable structures. Despite a large distance between the magnetic centers, we find a high magnetoresistance and attribute this unexpected property to very strong induced π magnetism, in particular for full coverage of all octagonal hollow sites by Mn atoms. In contrast to the magnetoresistance of graphene nanoribbon edges, the proposed system is well controlled and therefore suitable for applications.

  12. Spin Hall magnetoresistance in antiferromagnet/normal metal bilayers

    KAUST Repository

    Manchon, Aurelien

    2017-01-01

    We investigate the emergence of spin Hall magnetoresistance in a magnetic bilayer composed of a normal metal adjacent to an antiferromagnet. Based on a recently derived drift diffusion equation, we show that the resistance of the bilayer depends on the relative angle between the direction transverse to the current flow and the Néel order parameter. While this effect presents striking similarities with the spin Hall magnetoresistance recently reported in ferromagnetic bilayers, its physical origin is attributed to the anisotropic spin relaxation of itinerant spins in the antiferromagnet.

  13. Intracranial pressure monitoring, cerebral perfusion pressure estimation, and ICP/CPP-guided therapy: a standard of care or optional extra after brain injury?

    Science.gov (United States)

    Kirkman, M A; Smith, M

    2014-01-01

    Measurement of intracranial pressure (ICP) and mean arterial pressure (MAP) is used to derive cerebral perfusion pressure (CPP) and to guide targeted therapy of acute brain injury (ABI) during neurointensive care. Here we provide a narrative review of the evidence for ICP monitoring, CPP estimation, and ICP/CPP-guided therapy after ABI. Despite its widespread use, there is currently no class I evidence that ICP/CPP-guided therapy for any cerebral pathology improves outcomes; indeed some evidence suggests that it makes no difference, and some that it may worsen outcomes. Similarly, no class I evidence can currently advise the ideal CPP for any form of ABI. 'Optimal' CPP is likely patient-, time-, and pathology-specific. Further, CPP estimation requires correct referencing (at the level of the foramen of Monro as opposed to the level of the heart) for MAP measurement to avoid CPP over-estimation and adverse patient outcomes. Evidence is emerging for the role of other monitors of cerebral well-being that enable the clinician to employ an individualized multimodality monitoring approach in patients with ABI, and these are briefly reviewed. While acknowledging difficulties in conducting robust prospective randomized studies in this area, such high-quality evidence for the utility of ICP/CPP-directed therapy in ABI is urgently required. So, too, is the wider adoption of multimodality neuromonitoring to guide optimal management of ICP and CPP, and a greater understanding of the underlying pathophysiology of the different forms of ABI and what exactly the different monitoring tools used actually represent.

  14. An in vitro study on the retentive strength of orthodontic bands cemented with CPP-ACP-containing GIC

    Science.gov (United States)

    Heravi, Farzin; Bagheri, Hossein; Rangrazi, Abdolrasoul; Mojtaba Zebarjad, Seyed

    2016-12-01

    Caries and white spot lesions around orthodontic bands are well known occurrences in fixed orthodontic treatment. There are several methods to overcome these problems. One of these includes modification of the band cement with remineralizing agents such as casein phosphopeptide-amorphous calcium phosphate (CPP-ACP). However, it should be evaluated that the cement modification has no significant negative effects on the retentive strength of the cemented orthodontic bands. In a continuation of our previous studies on the effects of the addition of CPP-ACP on the mechanical properties of luting and lining glass ionomer cement (GIC), this study aimed to investigate the retentive strength of orthodontic bands cemented with CPP-ACP containing GIC. Sixty extracted human pre molars teeth were embedded in acrylic resin and randomly divided into two groups of 30 specimens. In group 1, bands were cemented to the tooth with a GIC. In group 2, CPP-ACP (1.56% w/w) was added to the GIC before cementation. The retentive strength of each groups was determined with a universal testing machine. Further, the amount of cement remaining on the tooth surface was evaluated under a stereomicroscope, and the adhesive remnant index (ARI) score was determined. Results of this study showed that there were no significant differences between the groups in retentive strength and ARI score. In conclusion, modification of GIC with 1.56% w/w CPP-ACP had no negative effects on the retentive strength of the bands so can be used during fixed orthodontic treatment.

  15. Magnetoresistive performance and comparison of supermagnetic nanoparticles on giant magnetoresistive sensor-based detection system

    Science.gov (United States)

    Wang, Wei; Wang, Yi; Tu, Liang; Feng, Yinglong; Klein, Todd; Wang, Jian-Ping

    2014-07-01

    Giant magnetoresistive (GMR) biosensors have emerged as powerful tools for ultrasensitive, multiplexed, real-time electrical readout, and rapid biological/chemical detection while combining with magnetic particles. Finding appropriate magnetic nanoparticles (MNPs) and its influences on the detection signal is a vital aspect to the GMR bio-sensing technology. Here, we report a GMR sensor based detection system capable of stable and convenient connection, and real-time measurement. Five different types of MNPs with sizes ranging from 10 to 100 nm were investigated for GMR biosensing. The experiments were accomplished with the aid of DNA hybridization and detection architecture on GMR sensor surface. We found that different MNPs markedly affected the final detection signal, depending on their characteristics of magnetic moment, size, and surface-based binding ability, etc. This work may provide a useful guidance in selecting or preparing MNPs to enhance the sensitivity of GMR biosensors, and eventually lead to a versatile and portable device for molecular diagnostics.

  16. Large magnetoresistance in current-perpendicular-to-plane pseudo spin-valves using Co{sub 2}Fe(Ga{sub 0.5}Ge{sub 0.5}) Heusler alloy and AgZn spacer

    Energy Technology Data Exchange (ETDEWEB)

    Du, Ye; Hono, K. [Magnetic Materials Unit, National Institute for Materials Science, Tsukuba 305-0047 (Japan); Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8571 (Japan); Furubayashi, T.; Sasaki, T. T.; Sakuraba, Y.; Takahashi, Y. K. [Magnetic Materials Unit, National Institute for Materials Science, Tsukuba 305-0047 (Japan)

    2015-09-14

    Fully epitaxial pseudo spin-valves (PSVs) using 10-nm-thick Co{sub 2}Fe(Ga{sub 0.5}Ge{sub 0.5}) (CFGG) ferromagnetic layers and a 5-nm-thick AgZn space layer annealed at 630 °C show a large current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) output with resistance-change area product, ΔRA, of 21.5 mΩ μm{sup 2} and MR ratio of 59.6% at room temperature. These values are substantially enhanced to ΔRA of 59.8 mΩ μm{sup 2} and MR ratio of 200.0% at 10 K. The large MR is attributed to the high spin polarization of the CFGG electrodes with the enhanced L2{sub 1} ordering induced by the atomic diffusion of Zn through the CFGG layers. The CPP-PSV shows relatively large ΔRA of 10.9 mΩ μm{sup 2} with the MR ratio of 25.6% for the low annealing temperature of 350 °C, which is a practically useful feature for read sensor applications.

  17. Magnetic giant magnetoresistance commercial off the shelf for space applications

    DEFF Research Database (Denmark)

    Michelena, M.D.; Oelschlägel, Wulf; Arruego, I.

    2008-01-01

    The increase of complexity and miniaturizing level of Aerospace platforms make use of commercial off the shelf (COTS) components constitute a plausible alternative to the use of military or rad-tolerant components. In this work, giant magnetoresistance commercial sensors are studied to be used...

  18. Magnetoresistive sensor for real-time single nucleotide polymorphism genotyping

    DEFF Research Database (Denmark)

    Rizzi, Giovanni; Østerberg, Frederik Westergaard; Dufva, Martin

    2014-01-01

    We demonstrate a magnetoresistive sensor platform that allows for the real-time detection of point mutations in DNA targets. Specifically, we detect point mutations at two sites in the human beta globin gene. For DNA detection, the present sensor technology has a detection limit of about 160pM an...

  19. Magnetoresistance, electrical conductivity, and Hall effect of glassy carbon

    Energy Technology Data Exchange (ETDEWEB)

    Baker, D.F.

    1983-02-01

    These properties of glassy carbon heat treated for three hours between 1200 and 2700/sup 0/C were measured from 3 to 300/sup 0/K in magnetic fields up to 5 tesla. The magnetoresistance was generally negative and saturated with reciprocal temperature, but still increased as a function of magnetic field. The maximum negative magnetoresistance measured was 2.2% for 2700/sup 0/C material. Several models based on the negative magnetoresistance being proportional to the square of the magnetic moment were attempted; the best fit was obtained for the simplest model combining Curie and Pauli paramagnetism for heat treatments above 1600/sup 0/C. Positive magnetoresistance was found only in less than 1600/sup 0/C treated glassy carbon. The electrical conductivity, of the order of 200 (ohm-cm)/sup -1/ at room temperature, can be empirically written as sigma = A + Bexp(-CT/sup -1/4) - DT/sup -1/2. The Hall coefficient was independent of magnetic field, insensitive to temperature, but was a strong function of heat treatment temperature, crossing over from negative to positive at about 1700/sup 0/C and ranging from -0.048 to 0.126 cm/sup 3//coul. The idea of one-dimensional filaments in glassy carbon suggested by the electrical conductivity is compatible with the present consensus view of the microstructure.

  20. Anisotropic magnetoresistance and thermodynamic fluctuations in high-temperature superconductors

    CERN Document Server

    Heine, G

    1999-01-01

    Measurements of the in-plane and out-of-plane resistivity and the transverse and longitudinal in-plane and out-of-plane magnetoresistance above T, are reported in the high-temperature superconductors Bi2Sr2CaCu208+' and YBa2CU307 sub b. The carrier concentration of the Bi2Sr2CaCu208+' single crystals covers a broad range of the phase diagram from the slightly under doped to the moderately over doped region. The doping concentration of the thin films ranges from strongly under doped to optimally doped. The in-plane resistivities obey a metallic-like temperature dependence with a positive magnetoresistance in the transverse and the longitudinal orientation of the magnetic field. The out-of-plane resistivities show an activated behavior above T, with a metallic region at higher temperatures and negative magnetoresistance. The data were analyzed in the framework of a model for superconducting order parameter fluctuations. The positive in-plane magnetoresistance of the highly anisotropic Bi2Sr2CaCu208+x single cry...

  1. Shear strength of orthodontic bracket bonding with GIC bonding agent after the application of CPP-ACPF paste

    Directory of Open Access Journals (Sweden)

    Melisa Budipramana

    2013-03-01

    Full Text Available Background: White spot lesion is a major problem during fixed orthodontic treatment. This problem can be solved by minimizing white spot lesion before the treatment and using a fluoride-releasing bonding agent. The application of casein phosphopeptidesamorphous calcium phospate fluoride (CPP-ACPF paste as remineralization agent before treatment and GIC as orthodontic bonding agent is expected to overcome this problem as well as to strengthen GIC bonding. Purpose: To measure the shear strength of fix orthodontic appliance using GIC bonding with CPP-ACPF application prior treatment. Methods: In this study, 50 extracted premolars were randomly divided into 2 groups: group 1 as treatment group and group II as control group that was not given CPPACPF pretreatment. After having been cut and put into acrylic device, the samples in group I were given pretreatment with CPP-ACPF paste on enamel surface for 2 minutes twice a day as instructed in product label for 14 days. Orthodontic brackets were bonded with GIC bonding agent on all samples in both groups as instructed in product label. Then, the shear strength was measured by Autograph Shimatzu with crosshead speed 0.5 mm/minute. The data was analyzed with Independent t-test. Results: The mean shear bond strength in treatment group was 19.22 ± 4.04 MPa and in control group was 12.97 ± 3.97 MPa. Independent t-test analysis showed that there was a significant difference between treatment and control group (p<0.05. Conclusion: CPP-ACPF pretreatment could increase GIC orthodontic bonding shear strength.Latar belakang: Lesi putih karies merupakan masalah utama selama perawatan dengan peranti cekat ortodonti. Hal ini dapat diatasi dengan cara mengurangi lesi putih sebelum perawatan dengan menggunakan bahan bonding yang mengandung fluorida. Aplikasi pasta casein phosphopeptides-amorphous calcium phospate fluoride (CPP-ACPF sebagai bahan remineralisasi sebelum perawatan dan bahan bonding GIC diharapkan dapat

  2. Do Not Hallow until You Are out of the Wood! Ultrasonographic Detection of CPP Crystal Deposits in Menisci: Facts and Pitfalls

    Science.gov (United States)

    Filippou, Georgios; Adinolfi, Antonella; Bozios, Panagiotis; Lorenzini, Sauro; Picerno, Valentina; Di Sabatino, Valentina; Bertoldi, Ilaria; Gambera, Dario; Galeazzi, Mauro; Frediani, Bruno

    2013-01-01

    Purpose. Ultrasonography (US) has been demonstrated to be an important tool in the diagnosis of calcium pyrophosphate (CPP) crystal deposition disease. The aim of our study was to individuate and describe possible pitfalls in US detection of such deposits in menisci. Patients and Methods. We enrolled all patients waiting to undergo knee replacement surgery due to osteoarthritis, for one-month period. Each patient underwent US examination of the knee, focusing on the menisci. After surgery, the menisci were examined by US, macroscopically and microscopically, using the microscopic analysis as the gold standard for CPP deposition. Results. 11 menisci of 6 patients have been studied. Ex vivo examination of menisci performed better in CPP identification than in vivo examination. The possible reasons of misinterpretation or misdiagnosis of the in vivo exam were identified and are extensively described in the paper. Also a new sign of CPP crystal deposits was found. Conclusions. This study permitted to highlight some difficulties in CPP crystal detection by US in menisci. Further studies are needed to define completely US CPP crystal aspect and to improve the sensibility and specificity of US in CPP deposition diagnosis. PMID:23970829

  3. Do Not Hallow until You Are out of the Wood! Ultrasonographic Detection of CPP Crystal Deposits in Menisci: Facts and Pitfalls

    Directory of Open Access Journals (Sweden)

    Georgios Filippou

    2013-01-01

    Full Text Available Purpose. Ultrasonography (US has been demonstrated to be an important tool in the diagnosis of calcium pyrophosphate (CPP crystal deposition disease. The aim of our study was to individuate and describe possible pitfalls in US detection of such deposits in menisci. Patients and Methods. We enrolled all patients waiting to undergo knee replacement surgery due to osteoarthritis, for one-month period. Each patient underwent US examination of the knee, focusing on the menisci. After surgery, the menisci were examined by US, macroscopically and microscopically, using the microscopic analysis as the gold standard for CPP deposition. Results. 11 menisci of 6 patients have been studied. Ex vivo examination of menisci performed better in CPP identification than in vivo examination. The possible reasons of misinterpretation or misdiagnosis of the in vivo exam were identified and are extensively described in the paper. Also a new sign of CPP crystal deposits was found. Conclusions. This study permitted to highlight some difficulties in CPP crystal detection by US in menisci. Further studies are needed to define completely US CPP crystal aspect and to improve the sensibility and specificity of US in CPP deposition diagnosis.

  4. Comparative evaluation of the effect of Er:YAG laser and low level laser irradiation combined with CPP-ACPF cream on treatment of enamel caries.

    Science.gov (United States)

    Heravi, Farzin; Ahrari, Farzaneh; Mahdavi, Mahdieh; Basafa, Soroush

    2014-04-01

    This study investigated the effectiveness of low power red and infrared lasers and that of Er:YAG laser, in association with CPP-ACPF cream, on remineralization of white spot lesions. Fifty intact premolars were immersed in a demineralization solution for 10 weeks to induce caries like lesions and then were divided into five groups. In group 1, the teeth were covered with a CPP-ACPF cream for 3 minutes and then irradiated with a low power red laser (660 nm, 200 mW) for 1 minute through the cream. In group 2, the treatment was the same as that in group 1, but an infrared laser (810 nm, 200 mW) was employed. The specimens in group 3 were irradiated with an Er:YAG laser (100 mJ, 10 Hz) combined with CPP-ACPF. In group 4, the CPP-ACPF cream was applied for 4 minutes and group 5 was submitted to neither laser nor CPP-ACPF. The micro Vickers hardness was compared at 20, 60 and 100 µ from the enamel surface among the groups. The highest microhardness was observed in the low power red and Er:YAG laser groups and the lowest one belonged to the CPP-ACPF alone and control groups. However, no significant difference was found in microhardness of the experimental groups at any of the evaluation depths (p>0.05). With the laser parameters used in this study, neither the combined application of Er:YAG laser with CPP-ACPF nor the combination of low power lasers with CPP-ACPF provided a significant increase in remineralization of enamel caries. Key words:Low level laser, Er:YAG, laser, enamel caries, CPP-ACP, microhardness, white spot lesion.

  5. Decontamination of FAST (CPP-666) fuel storage area stainless steel fuel storage racks

    Energy Technology Data Exchange (ETDEWEB)

    Kessinger, G.F.

    1993-10-01

    The purpose of this report was to identify and evaluate alternatives for the decontamination of the RSM stainless steel that will be removed from the Idaho Chemical Processing plant (ICPP) fuel storage area (FSA) located in the FAST (CPP-666) building, and to recommend decontamination alternatives for treating this material. Upon the completion of a literature search, the review of the pertinent literature, and based on the review of a variety of chemical, mechanical, and compound (both chemical and mechanical) decontamination techniques, the preliminary results of analyses of FSA critically barrier contaminants, and the data collected during the FSA Reracking project, it was concluded that decontamination and beneficial recycle of the FSA stainless steel produced is technically feasible and likely to be cost effective as compared to burying the material at the RWMC. It is recommended that an organic acid, or commercial product containing an organic acid, be used to decontaminate the FSA stainless steel; however, it is also recommended that other surface decontamination methods be tested in the event that this method proves unsuitable. Among the techniques that should be investigated are mechanical techniques (CO{sub 2} pellet blasting and ultra-high pressure water blasting) and chemical techniques that are compatible with present ICPP waste streams.

  6. Evaluation of the remineralization capacity of CPP-ACP containing fluoride varnish by different quantitative methods.

    Science.gov (United States)

    Savas, Selcuk; Kavrìk, Fevzi; Kucukyìlmaz, Ebru

    2016-01-01

    The aim of this study was to evaluate the efficacy of CPP-ACP containing fluoride varnish for remineralizing white spot lesions (WSLs) with four different quantitative methods. Four windows (3x3 mm) were created on the enamel surfaces of bovine incisor teeth. A control window was covered with nail varnish, and WSLs were created on the other windows (after demineralization, first week and fourth week) in acidified gel system. The test material (MI Varnish) was applied on the demineralized areas, and the treated enamel samples were stored in artificial saliva. At the fourth week, the enamel surfaces were tested by surface microhardness (SMH), quantitative light-induced fluorescence-digital (QLF-D), energy-dispersive spectroscopy (EDS) and laser fluorescence (LF pen). The data were statistically analyzed (α=0.05). While the LF pen measurements showed significant differences at baseline, after demineralization, and after the one-week remineralization period (p0.05). With regards to the SMH and QLF-D analyses, statistically significant differences were found among all the phases (pfluoride varnish provides remineralization of WSLs after a single application and seems suitable for clinical use.

  7. Conformational analysis of Infectious bursal disease virus (IBDV derived cell penetrating peptide (CPP analogs

    Directory of Open Access Journals (Sweden)

    Vinay G. Joshi

    2013-12-01

    Full Text Available Aim: This study was designed to develop peptide analogs of Infectious Bursal Disease (IBD virus VP5 protein segment having cell penetrating ability to improve their interaction with cargo molecule (Nucleic acid without affecting the backbone conformation. Materials and Methods: IBDV VP5 protein segment designated as RATH peptide were synthesized using solid phase peptide synthesis and their solution conformation was elucidated using CD spectroscopy in polar (water and apolar (TFE solvents. Cell penetrating ability of RATH-CONH2 was observed using FITC labeled peptide internalization in to HeLa cells under fluorescent microscopy. The efficacy of RATH analog interactions with nucleic acids was evaluated using FITC labeled oligonucleotides by fluorescence spectroscopy and plasmid constructs in gel retardation assay. Results: CD spectra of RATH analogs in water and apolar trifluroethanol (TFE helped to compare their secondary structures which were almost similar with dominant beta conformations suggesting successful induction of positive charge in the analogs without affecting back bone conformation of CPP designed. Cell penetrating ability of RATH CONH2 in HeLa cell was more than 90%. The fluorescence spectroscopy and plasmid constructs in gel retardation assay demonstrated successful interaction of amide analogs with nucleic acid. Conclusion: Intentional changes made in IBDV derived peptide RATH COOH to RATH CONH2 did not showed major changes in backbone conformation and such modifications may help to improve the cationic charge in most CPPs to interact with nucleic acid. [Vet World 2013; 6(6.000: 307-312

  8. Enhancement of magnetoresistance by inserting thin NiAl layers at the interfaces in Co2FeGa0.5Ge0.5/Ag/Co2FeGa0.5Ge0.5 current-perpendicular-to-plane pseudo spin valves

    Science.gov (United States)

    Jung, J. W.; Sakuraba, Y.; Sasaki, T. T.; Miura, Y.; Hono, K.

    2016-03-01

    We have investigated the effects of insertion of a thin NiAl layer (≤0.63 nm) into a Co2FeGa0.5Ge0.5 (CFGG)/Ag interface on the magnetoresistive properties in CFGG/Ag/CFGG current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) pseudo spin valves (PSVs). First-principles calculations of ballistic transmittance clarified that the interfacial band matching at the (001)-oriented NiAl/CFGG interface is better than that at the (001)-Ag/CFGG interface. The insertion of 0.21-nm-thick NiAl layers at the Co2FeGa0.5Ge0.5/Ag interfaces effectively improved the magnetoresistance (MR) output; the observed average and the highest MR ratio (ΔRA) are 62% (25 mΩ μm2) and 77% (31 mΩ μm2) at room temperature, respectively, which are much higher than those without NiAl insertion. Microstructural analysis using scanning transmission electron microscopy confirmed the existence of thin NiAl layers at the Ag interfaces with only modest interdiffusion even after annealing at 550 °C. The improvement of the interfacial spin-dependent scattering by very thin NiAl insertion can be a predominant reason for the enhancement of the MR output.

  9. Diagnosis of Neisseria gonorrhoeae among pregnant women by culture method and PCR on cppB gene

    OpenAIRE

    Jalal Mardaneh; Parvin Hasanzadeh; Mohammad Motamedifar; Khadijeh Ahmadi; Farhad Nikkhahi

    2013-01-01

    Background: Neisseria gonorrhoeae is a human obligate pathogen and the etiological agent of gonorrhea. Health irreparable complications resulting from gonorrhea disease occur mainly in pregnant women and neonates. Aim of this study was diagnosis of Neisseria gonorrhoeae among pregnant women with using culture and molecular method by amplification of cppB gene with PCR. Material and Methods: In this cross-sectional study, two endocervical swab specimens were obtained from 1100 pregnant women w...

  10. Effectiveness of sodium bicarbonate combined with hydrogen peroxide and CPP-ACPF in whitening and microhardness of enamel

    Science.gov (United States)

    Hasanzadeh, Nadia; Rajabi, Omid; Forouzannejad, Zakiyeh

    2017-01-01

    Background This study investigated the effects of sodium bicarbonate (NaHCO3) combined with 1.5% hydrogen peroxide (H2O2) and casein phosphopeptide amorphous calcium phosphate fluoride (CPP-ACPF) on color and microhardness of enamel. Material and Methods Seventy-five bovine incisors were immersed in a tea solution for 7.5 days. The specimens were randomly divided into five groups according to the whitening agent applied: 1) 94% NaHCO3, 2) a blend of 94% NaHCO3 and CPP-ACPF, 3) a blend of 94% NaHCO3 and 1.5% H2O2, 4) a blend of 94% NaHCO3, 1.5% H2O2 and CPP-ACPF, 5) control. The whitening procedure was performed for 10 times over 10 days. At each day, the buccal surfaces were covered with whitening agents for 5 minutes and then brushed for 30 seconds. After the 10 days, the teeth were again immersed in a tea solution for 10 minutes. Color assessment was performed at baseline (T1), after the first staining process (T2), after the whitening procedure (T3), and after the second staining process (T4). Finally, the specimens were subjected to microhardness test. Results There was a statistically significant difference in the color change between T2 and T3 stages among the study groups (p<0.05), with the greatest improvement observed in group 4. Microhardness was significantly greater in groups 2 and 4, as compared to the other groups (p<0.05). Conclusions The combination of 94% NaHCO3, 1.5% H2O2 and CPP-ACPF was effective in improving color and microhardness of teeth with extrinsic stains and could be recommended in the clinical situation.

  11. The Effect of Laser Irradiation on Shear Bond Strength of GI to Dentin After CPP-ACP Treatment

    Directory of Open Access Journals (Sweden)

    Moezizadeh

    2016-02-01

    Full Text Available Background Dentin sensitivity is one of the most important problems in dentistry. Enamel loss due to root exposure is serious issue and common exposure is one of the reasons for dentin hypersensitivity. There are different methods for solving this problem. One of the most conservative and least expensive methods is use of casein phosphopeptide-amorphous calcium phosphate (CPP-ACP paste. Objectives The aim of this study was to evaluate shear bond strength of GIC to dentin, with or without laser, CPP-ACP paste and polyacrylic acid treatments. Materials and Methods Fifty sound human third molars were bisected in a mesiodistal direction using a diamond disk. Using 400, 600 and 800 grit silicon carbide paper, dentin surfaces were exposed. The teeth were divided into five groups. In groups A, B, D and H, CPP-ACP (GC tooth mousse Itabashi-Ku, Tokyo, Japan was applied for one hour the first day and repeated at the same time of day for a total of five days. In groups B, C, D and E, the specimens were subjected to laser for 10 seconds using Er, Cr: YSGG laser. In groups B, C, H and G, specimens were treated with 10% polyacrylic acid for 20 seconds. A plastic tube containing GI was positioned over the tooth. Samples were loaded in shear bond using a Universal Testing Machine (Zwick/Roell, Germany, at a 0.5 mm/minute crosshead speed. Results Despite the failing of groups A and D, group analysis showed that there were no significant differences between the groups. The predominant type of fracture in all groups was adhesive. Conclusions Application of CPP-ACP, without preconditioning with polyacrylic acid, can decrease shear bond strength. Laser irradiation has no effect on shear bond strength of GIC to dentin in this condition.

  12. CPP-ACP Versus Fluoride Products in Inhibiting Enamel Demineralization: A Meta-Analysis%CPP-ACP与含氟制剂抑制牙釉质脱矿效果比较的Meta分析

    Institute of Scientific and Technical Information of China (English)

    金甦晗; 周海静; 李莹; 聂红兵

    2014-01-01

    目的:系统评价局部应用CPP-ACP与含氟制剂比较抑制牙釉质脱矿的临床效果.方法:计算机检索Pubmed、CNKI、CBM、VIP和WanFang Data数据库,查找CPP-ACP与含氟制剂比较抑制牙釉质脱矿的随机对照试验(RCT),并追溯纳入文献的参考文献,检索时间均为建库至2013年10月18日.由2名评价员按纳入和排除标准独立进行文献筛选、资料提取和评价纳入研究的方法学质量后,采用RevManS.2软件进行Meta分析.结果:最终纳入7篇文献,11个RCT,共563例受试者.Meta分析结果显示:局部应用CPP-ACP后,其Diagnodent值[MD=2.30,95%CI(0.69,3.91),P=0.005]及脱矿率[OR=1.40,95%CI(1.09,1.81),P=0.009]明显低于局部应用含氟制剂,其差异有统计学意义.结论:在早期釉质龋、正畸治疗后出现的釉质白斑病损等牙釉质脱矿的预防和治疗方面,CPP-ACP具有优于含氟制剂的临床疗效,且不存在像含氟制剂的安全问题,因此,CPP-ACP作为一种新型再矿化剂有望替代含氟制剂发挥较优效果.

  13. Diagnosis of Neisseria gonorrhoeae among pregnant women by culture method and PCR on cppB gene

    Directory of Open Access Journals (Sweden)

    Jalal Mardaneh

    2013-11-01

    Full Text Available Background: Neisseria gonorrhoeae is a human obligate pathogen and the etiological agent of gonorrhea. Health irreparable complications resulting from gonorrhea disease occur mainly in pregnant women and neonates. Aim of this study was diagnosis of Neisseria gonorrhoeae among pregnant women with using culture and molecular method by amplification of cppB gene with PCR. Material and Methods: In this cross-sectional study, two endocervical swab specimens were obtained from 1100 pregnant women who referred to Shiraz Hospitals. Culture on nonselective and selective media and nucleic acid amplification test (NAAT were performed for detection of Neisseria gonorrhoeae cppB gene. Results: All endocervical swabs cultures on selective and nonselective media were negative for Neisseria gonorrhoeae. Among examined endocervical swabs, 13samples (1.18% were positive by nucleic acid amplification of Neisseria gonorrgoeae cppB gene. Conclusion: Negative results of culture and positive results of PCR in this study indicate that however culture is gold standard method for detection of Neisseria gonorrhoeae but due to bacterial autolysis, poor sampling techniques and improper specimen storage and transport, its value decline as compared with Nucleic acid amplification test (NAAT.

  14. Quince 'CPP': new dwarf rootstock for pear trees on organic and high density planting

    Directory of Open Access Journals (Sweden)

    Renato Vasconcelos Botelho

    2012-06-01

    Full Text Available In Brazil, pear production presents the same incipient situation over the last 15 years, due mostly to low production technology. In this context, this study aimed to evaluate the development, growth and production of the pear tree cultivars Cascatense, Tenra and Hosui grafted on 'CPP' quince rootstock, using 'FT' pear as interstem. This trial was carried out in Guarapuava, State of Paraná, Southern region of Brazil, by five productive cycles. The pear trees were planted in September of 2004, spaced at 1.0 x 4.0 m (2,500 trees ha-1, trained to the modified central leader, on a Four-wire trellis, with drip irrigation and cultivated under organic production system. The following variables were evaluated: sprouting, anthesis, yield, fruit weight, soluble solids content, titratable acidity, pulp firmness, canopy area per plant and per hectare and trunk diameter. The pear tree cv. Tenra was outstanding most of the years for fruit yield, and, consequently, showed the highest accumulated yield over the period (51.6 t ha-1, followed by the cultivars Cascatense (39.7 t ha-1 and Hosui (18.7 t ha-1. All pear cultivars presented suitable physical-chemical characteristics for commercial purposes, with minimal average soluble solids content of 11% at harvest. The maximum canopy area per hectare was attained for cv. Cascatense (3063.2 m², that was considered insufficient for a high yield. These results suggest the needs for studies with higher density planting and other training systems, searching optimize canopy volume. One of the most limiting factors in the organic pear orchard was the incidence of pear dieback caused by Botriosphaeria dothidea, severe more often in pear trees cv. Hosui.

  15. Spin rectification induced by spin Hall magnetoresistance at room temperature

    Science.gov (United States)

    Wang, P.; Jiang, S. W.; Luan, Z. Z.; Zhou, L. F.; Ding, H. F.; Zhou, Y.; Tao, X. D.; Wu, D.

    2016-09-01

    We have experimentally and theoretically investigated the dc voltage generation in the heterostructure of Pt and yttrium iron garnet under the ferromagnetic resonance. Besides a symmetric Lorenz line shape dc voltage, an antisymmetric Lorenz line shape dc voltage is observed in field scan, which can solely originate from the spin rectification effect due to the spin Hall magnetoresistance. The angular dependence of the dc voltage is theoretically analyzed by taking into account both the spin pumping and the spin rectification effects. We find that the experimental results are in excellent agreement with the theoretical model, further identifying the spin Hall magnetoresistance origin of the spin rectification effect. Moreover, the spin pumping and the spin rectification effects are quantitatively separated by their different angular dependence at particular experimental geometry.

  16. Theoretical study of disorder induced magnetoresistance in graphene

    Science.gov (United States)

    Adam, Shaffique; Ping, Jinglei; Yudhistira, Indra; Ramakrishnan, Navneeth; Cho, Sungjae; Fuhrer, Michael S.

    2014-03-01

    In this work we predict theoretically that carrier density inhomogeneity provides a new mechanism for classical magnetoresistance. For concreteness, we study the case of graphene where density inhomogeneity and carrier scattering is dominated by charged impurities, although the mechanism itself is quite general and applies to other systems in which there are large spatial fluctuations of the carrier density. Calculations using an effective medium approximation show that low-field magnetoresistance becomes a universal function of the ratio between the average carrier density and the fluctuations of the carrier density, and scales as a power-law when this ratio is large. Our finding is in excellent agreement with recent experimental results. This work is supported by the Singapore National Research Foundation NRF-NRFF2012-01.

  17. A Magnetoresistive Tactile Sensor for Harsh Environment Applications

    Directory of Open Access Journals (Sweden)

    Ahmed Alfadhel

    2016-05-01

    Full Text Available A magnetoresistive tactile sensor is reported, which is capable of working in high temperatures up to 140 °C. Hair-like bioinspired structures, known as cilia, made out of permanent magnetic nanocomposite material on top of spin-valve giant magnetoresistive (GMR sensors are used for tactile sensing at high temperatures. The magnetic nanocomposite, consisting of iron nanowires incorporated into the polymer polydimethylsiloxane (PDMS, is very flexible, biocompatible, has high remanence, and is also resilient to antagonistic sensing ambient. When the cilia come in contact with a surface, they deflect in compliance with the surface topology. This yields a change of the GMR sensor signal, enabling the detection of extremely fine features. The spin-valve is covered with a passivation layer, which enables adequate performance in spite of harsh environmental conditions, as demonstrated in this paper for high temperature.

  18. Anisotropic Magnetoresistance of Cobalt Films Prepared by Thermal Evaporation

    Directory of Open Access Journals (Sweden)

    Yuttanun PANSONG

    2005-01-01

    Full Text Available Cobalt films on silicon substrates were prepared by thermal evaporation. By evaporating 0.05 g of cobalt for 80-240 s, a thickness from 21.1 to 67.7 nm was obtained with a deposition rate about 0.26-0.32 nm per second. The 29 nm-thick cobalt film exhibited magnetoresistance (MR ranging from -0.0793% (field perpendicular to the current to +0.0134% (field parallel to the current with saturation in a 220 mT magnetic field. This MR was attributed to anisotropic magnetoresistance (AMR since changing the angle between the field and the current (θ gave rise to a change in the electrical resistance (Rθ. The results agreed with the theory since the plot between Rθ and cos2θ could be linearly fitted. AMR was not observed in non-ferromagnetic gold films whose resistance was insensitive to the angle between the current and magnetic field.

  19. Micro-macro modelling of stress-dependent anisotropic magnetoresistance

    Energy Technology Data Exchange (ETDEWEB)

    Bartok, A; Daniel, L; Razek, A, E-mail: andras.bartok@lgep.supelec.fr, E-mail: laurent.daniel@u-psud.fr [Laboratoire de Genie Electrique de Paris (LGEP), CNRS (UMR 8507)-SUPELEC-UPMC Paris 6-Univ Paris-Sud 11, 11 rue Joliot-Curie, Plateau de Moulon, 91192 Gif-sur-Yvette (France)

    2011-04-06

    Anisotropic magnetoresistance (AMR) is the basic phenomenon of a spread class of sensors. AMR effect has a strong mechanical stress dependence. Micromagnetic simulations are often used for modelling the magnetoresistance of ferromagnetic materials, but these approaches do not allow us to investigate macroscopic effects (for example behaviour of a polycrystal under stress) due to the high number of interactions and degrees of freedom. On the other hand macroscopic phenomenological approaches fail in describing the main role of microstructure on the effective behaviour. In this work a micro-macro model is proposed to describe the effect of stress on the AMR in ferromagnetic polycrystals. Results are discussed and compared with experimental data from the literature.

  20. Coexistence of tunneling magnetoresistance and Josephson effects in SFIFS junctions

    Science.gov (United States)

    Vávra, O.; Soni, R.; Petraru, A.; Himmel, N.; Vávra, I.; Fabian, J.; Kohlstedt, H.; Strunk, Ch.

    2017-02-01

    We demonstrate an integration of tunneling magnetoresistance and the Josephson effects within one tunneling junction. Several sets of Nb-Fe-Al-Al2O3-Fe-Nb wafers with varying Al and Fe layers thickness were prepared to systematically explore the competition of TMR and Josephson effects. A coexistence of the critical current IC(dFe) and the tunneling magnetoresistance ratio T M R(dFe) is observed for iron layer dFe thickness range 1.9 and 2.9 nm. Further optimization such as thinner Al2O3 layer leads to an enhancement of the critical current and thus to an extension of the coexistence regime up to dFe≃3.9 nm Fe.

  1. Low coercivity giant magnetoresistance with perpendicular magnetic anisotropy

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Jeong-Seop; Yoon, Jungbum; Kang, Mool-Bit; You, Chun-Yeol, E-mail: cyyou@inha.ac.kr

    2014-05-01

    We find the perpendicular magnetic anisotropy giant magnetoresistance structure, whose coercivity is less than 10 Oe. We reveal that the coercivity of free layer can be smaller than 5 Oe in Co/Pd/Cu/[Co/Pd]{sub 4} multilayer structure with a TiO{sub 2} seed layer. The TiO{sub 2} seed layer plays a critical role in the small coercivity of free layer. The GMR ratio is around 1–1.8% for the out-of-plane magnetic fields, and the maximum MR sensitivity of 0.12%/Oe is achieved. - Highlights: • We find an extremely small coercivity giant magnetoresistance (GMR) structure for the out-of-plane magnetic field. • The key ingredient of small coercivity is a TiO{sub 2} seed layer. • Such a small coercivity GMR structure will be useful for automotive applications such as wheel speed, rotation, and position sensors.

  2. Giant magnetoresistance in the variable-range hopping regime

    Energy Technology Data Exchange (ETDEWEB)

    Ioffe, L. B., E-mail: ioffe@physics.rutgers.edu [Universite Pierre et Marie Curie, LPTHE (France); Spivak, B. Z. [University of Washington, Department of Physics (United States)

    2013-09-15

    We predict the universal power-law dependence of the localization length on the magnetic field in the strongly localized regime. This effect is due to the orbital quantum interference. Physically, this dependence shows up in an anomalously large negative magnetoresistance in the hopping regime. The reason for the universality is that the problem of the electron tunneling in a random media belongs to the same universality class as the directed polymer problem even in the case of wave functions of random sign. We present numerical simulations that prove this conjecture. We discuss the existing experiments that show anomalously large magnetoresistance. We also discuss the role of localized spins in real materials and the spin polarizing effect of the magnetic field.

  3. A Magnetoresistive Tactile Sensor for Harsh Environment Applications

    KAUST Repository

    Alfadhel, Ahmed

    2016-05-07

    A magnetoresistive tactile sensor is reported, which is capable of working in high temperatures up to 140 °C. Hair-like bioinspired structures, known as cilia, made out of permanent magnetic nanocomposite material on top of spin-valve giant magnetoresistive (GMR) sensors are used for tactile sensing at high temperatures. The magnetic nanocomposite, consisting of iron nanowires incorporated into the polymer polydimethylsiloxane (PDMS), is very flexible, biocompatible, has high remanence, and is also resilient to antagonistic sensing ambient. When the cilia come in contact with a surface, they deflect in compliance with the surface topology. This yields a change of the GMR sensor signal, enabling the detection of extremely fine features. The spin-valve is covered with a passivation layer, which enables adequate performance in spite of harsh environmental conditions, as demonstrated in this paper for high temperature.

  4. Interaction-induced huge magnetoresistance in a high mobility two-dimensional electron gas

    Energy Technology Data Exchange (ETDEWEB)

    Bockhorn, L.; Haug, R. J. [Institut für Festkörperphysik, Leibniz Universität Hannover, D-30167 Hannover (Germany); Gornyi, I. V. [Institut für Nanotechnologie, Karlsruher Institut of Technology, D-76021 Karlsruhe (Germany); Schuh, D. [Institut für Experimentelle und Angewandte Physik, Universität Regensburg, D-93053 Regensburg (Germany); Wegscheider, W. [ETH Zürich (Switzerland)

    2013-12-04

    A strong negative magnetoresistance is observed in a high-mobility two-dimensional electron gas in a GaAs/Al{sub 0.3}Ga{sub 0.7}As quantum well. We discuss that the negative magnetoresistance consists of a small peak induced by a combination of two types of disorder and a huge magnetoresistance explained by the interaction correction to the conductivity for mixed disorder.

  5. Electrophysical and Magnetoresistive Properties of Thin Film Alloy Ni80Fe20

    Directory of Open Access Journals (Sweden)

    О.V. Pylypenko

    2016-10-01

    Full Text Available In this work, the complex investigations of crystal structure and phase state, thermoresistive (resistivity, temperature coefficient of resistance, strain (integral and differential coefficients of longitudinal tensosensitivity at the strain interval Δεl = 0-1 % and magnetoresistive (magnetoresistance and anisotropic magnetoresistance properties of the thin film alloy Ni80Fe20 in the thicknesses range 10-45 nm. The effects of condensation conditions and heat treatments on referred above properties have been analyzed.

  6. Effect of meta-chlorophenylpiperazine (mCPP), a central serotonin agonist and vascular serotonin receptor antagonist, on blood pressure in SHR.

    Science.gov (United States)

    Cohen, M L; Kurz, K D; Fuller, R W

    1987-01-01

    mCPP (meta-chlorophenylpiperazine) has agonist activity at some central serotonin receptors and antagonist activity at peripheral vascular 5HT2 receptors, both effects that have been postulated to lower blood pressure. mCPP (10 and 30 mg/kg, i.p. 1 hr after administration) increased serotonin and decreased 5-hydroxy-indolacetic acid (5-HIAA) brain concentrations and elevated serum corticosterone and prolactin, indications of central serotonergic agonist activities. The same doses of mCPP also antagonized vascular 5HT2 receptors as measured by blockade of pressor responses to serotonin in pithed rats. Although mCPP could be demonstrated to activate central serotonergic receptors and block peripheral vascular 5HT2 receptors, mCPP (10 and 30 mg/kg, i.p.) produced little effect on blood pressure in either the anesthetized or conscious spontaneously hypertensive rat (SHR) up to 1 hr after intraperitoneal administration. The findings are consistent with initial studies in normotensive humans that have not demonstrated a reduction in blood pressure clinically after mCPP in doses that produce elevations in serum cortisol and prolactin levels.

  7. Tuning spin transport properties and molecular magnetoresistance through contact geometry

    Energy Technology Data Exchange (ETDEWEB)

    Ulman, Kanchan [Theoretical Sciences Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore 560064 (India); Narasimhan, Shobhana [Theoretical Sciences Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore 560064 (India); Sheikh Saqr Laboratory, ICMS, Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore 560064 (India); Delin, Anna [Department of Materials and Nanophysics, School of Information and Communication Technology, Electrum 229, Royal Institute of Technology (KTH), SE-16440 Kista (Sweden); Department of Physics and Astronomy, Uppsala University, Box 516, SE-75120 Uppsala (Sweden); SeRC (Swedish e-Science Research Center), KTH, SE-10044 Stockholm (Sweden)

    2014-01-28

    Molecular spintronics seeks to unite the advantages of using organic molecules as nanoelectronic components, with the benefits of using spin as an additional degree of freedom. For technological applications, an important quantity is the molecular magnetoresistance. In this work, we show that this parameter is very sensitive to the contact geometry. To demonstrate this, we perform ab initio calculations, combining the non-equilibrium Green's function method with density functional theory, on a dithienylethene molecule placed between spin-polarized nickel leads of varying geometries. We find that, in general, the magnetoresistance is significantly higher when the contact is made to sharp tips than to flat surfaces. Interestingly, this holds true for both resonant and tunneling conduction regimes, i.e., when the molecule is in its “closed” and “open” conformations, respectively. We find that changing the lead geometry can increase the magnetoresistance by up to a factor of ∼5. We also introduce a simple model that, despite requiring minimal computational time, can recapture our ab initio results for the behavior of magnetoresistance as a function of bias voltage. This model requires as its input only the density of states on the anchoring atoms, at zero bias voltage. We also find that the non-resonant conductance in the open conformation of the molecule is significantly impacted by the lead geometry. As a result, the ratio of the current in the closed and open conformations can also be tuned by varying the geometry of the leads, and increased by ∼400%.

  8. FeGa based tunneling magnetoresistance junctions and strain sensors

    OpenAIRE

    Thajudin, Ahmed Fazir

    2012-01-01

    Tunnel magnetoresistance (TMR) and inverse magnetostriction based strain gauges have gained immense importance due to their high spatial resolution and extremely high gauge factors. A TMR junction comprises of two ferromagnetic electrodes separated by an insulating barrier layer. One of the ferromagnetic layer is soft magnetic which is free to rotate its magnetization under external magnetic field, the other ferromagnet is hard magnetic and is stable under the same external field. An intentio...

  9. Magnetoresistance and magnetic properties in amorphous Fe-based wires

    Science.gov (United States)

    Bordin, G.; Buttino, G.; Cecchetti, A.; Poppi, M.

    2001-06-01

    The longitudinal and transverse magnetoresistances in amorphous Fe 77.5Si 7.5B 15 wires are studied at different values of the DC-bias currents in order to clarify the mechanism of the magnetization according to a 'core-shell' domain model. The role of closure domain structures in the magnetization process of the wires is analysed. Moreover, the effects of the Joule heating on the internal stresses, introduced during the rapid quenching in the sample preparation, are examined.

  10. Anomalies of magnetoresistance in Ce-based heavy fermion compounds

    Science.gov (United States)

    Sluchanko, N. E.; Bogach, A. V.; Anisimov, M. A.; Glushkov, V. V.; Demishev, S. V.; Samarin, N. A.; Chistyakov, O. D.; Burkhanov, G. S.; Gabani, S.; Flachbart, K.

    2015-12-01

    Magnetoresistance Δρ(H,T) of several heavy-fermion compounds, CeAl2, CeAl3 and CeCu6, substitutional solid solutions with quantum critical behavior CeCu6-xAux (x = 0.1, 0.2) and alloys with magnetic ground state Ce(Al1-xMx)2 (M = Co, Ni, x ≤ 0.8) was studied in a wide range of temperatures (1.8-40 K) in magnetic fields up to 80 kOe. It was shown that a consistent interpretation of the field dependences of the resistance for both non-magnetic and magnetically ordered cerium-based intermetallic compounds with strong electron correlations can be achieved within the framework of an approach that accounts for scattering of charge carriers by localized magnetic moments in a metal matrix. Within this approach, three different components of the magnetoresistance of cerium intermetallic compounds were identified: the negative Brillouin contribution proportional to the local magnetization ( -Δρ/ρ˜Mloc2 ), the alternating linear contribution ( Δρ/ρ˜H ) and the magnetic component, saturating in magnetic fields below 15 kOe. In the framework of the Yosida model for the cerium alloys under study, estimates of the local magnetic susceptibility χloc(H, T0) were obtained from the magnetoresistance data. Numerical differentiation of the magnetoresistance with respect to the magnetic field and analysis of the obtained d (Δρ/ρ)/d H =f (H ,T ) dependences allowed us to reconstruct the H-T magnetic phase diagrams of the strongly correlated electron systems under study as well as to examine the effects of spin polarization and renormalization of the electronic states on charge transport both in the regime of quantum critical behavior and in the magnetically ordered state.

  11. Highly Sensitive Flexible Magnetic Sensor Based on Anisotropic Magnetoresistance Effect.

    Science.gov (United States)

    Wang, Zhiguang; Wang, Xinjun; Li, Menghui; Gao, Yuan; Hu, Zhongqiang; Nan, Tianxiang; Liang, Xianfeng; Chen, Huaihao; Yang, Jia; Cash, Syd; Sun, Nian-Xiang

    2016-11-01

    A highly sensitive flexible magnetic sensor based on the anisotropic magnetoresistance effect is fabricated. A limit of detection of 150 nT is observed and excellent deformation stability is achieved after wrapping of the flexible sensor, with bending radii down to 5 mm. The flexible AMR sensor is used to read a magnetic pattern with a thickness of 10 μm that is formed by ferrite magnetic inks.

  12. Magnetoresistance Associated with Antiferromagnetic Interlayer Coupling Spaced by a Semiconductor in Fe /Si Multilayers

    Science.gov (United States)

    Inomata, K.; Yusu, K.; Saito, Y.

    1995-03-01

    Multilayer Fe/Si films with constant Fe thickness (2.6 nm) and variable Si thickness are investigated. Negative magnetoresistance is observed and two different temperature dependences are found as a function of Si thickness. For tSi = 1.2 nm, the magnetoresistance decreases with temperature decrease. For tSi>1.5 nm, the magnetoresistance increases (weakly) with temperature decrease. The magnetoresistance is attributed to spin-dependent scattering caused by antiferromagnetic layer coupling across a semiconducting spacer: narrow gap iron silicide for thin Si spacer layers and amorphous Si for thicker spacer layers.

  13. Domain wall magnetoresistance in BiFeO3 thin films measured by scanning probe microscopy

    Science.gov (United States)

    Domingo, N.; Farokhipoor, S.; Santiso, J.; Noheda, B.; Catalan, G.

    2017-08-01

    We measure the magnetotransport properties of individual 71° domain walls in multiferroic BiFeO3 by means of conductive—atomic force microscopy (C-AFM) in the presence of magnetic fields up to one Tesla. The results suggest anisotropic magnetoresistance at room temperature, with the sign of the magnetoresistance depending on the relative orientation between the magnetic field and the domain wall plane. A consequence of this finding is that macroscopically averaged magnetoresistance measurements for domain wall bunches are likely to underestimate the magnetoresistance of each individual domain wall.

  14. Anisotropic Magnetoresistance in Antiferromagnetic Sr_{2}IrO_{4}

    Directory of Open Access Journals (Sweden)

    C. Wang

    2014-11-01

    Full Text Available We report point-contact measurements of anisotropic magnetoresistance (AMR in a single crystal of antiferromagnetic Mott insulator Sr_{2}IrO_{4}. The point-contact technique is used here as a local probe of magnetotransport properties on the nanoscale. The measurements at liquid nitrogen temperature reveal negative magnetoresistances (up to 28% for modest magnetic fields (250 mT applied within the IrO_{2} a-b plane and electric currents flowing perpendicular to the plane. The angular dependence of magnetoresistance shows a crossover from fourfold to twofold symmetry in response to an increasing magnetic field with angular variations in resistance from 1% to 14%. We tentatively attribute the fourfold symmetry to the crystalline component of AMR and the field-induced transition to the effects of applied field on the canting of antiferromagnetic-coupled moments in Sr_{2}IrO_{4}. The observed AMR is very large compared to the crystalline AMRs in 3d transition metal alloys or oxides (0.1%–0.5% and can be associated with the large spin-orbit interactions in this 5d oxide while the transition provides evidence of correlations between electronic transport, magnetic order, and orbital states. The finding of this work opens an entirely new avenue to not only gain a new insight into physics associated with spin-orbit coupling but also to better harness the power of spintronics in a more technically favorable fashion.

  15. Electron and hole magnetoresistances in LaSb.

    Energy Technology Data Exchange (ETDEWEB)

    Han, F.; Xu, J.; Botana, A. S.; Xiao, Z. L.; Wang, Y. L.; Yang, W. G.; Chung, D. Y.; Kanatzidis, M. G.; Norman, M. R.; Crabtree, G. W.; Kwok, W. K.

    2017-09-07

    We report investigations on the magnetotransport in LaSb, which exhibits extremely large magnetoresistance (XMR). Foremost, we demonstrate that the resistivity plateau can be explained without invoking topological protection. We then determine the Fermi surface from Shubnikov–de Haas (SdH) quantum oscillation measurements and find good agreement with the bulk Fermi pockets derived from first-principles calculations. Using a semiclassical theory and the experimentally determined Fermi pocket anisotropies, we quantitatively describe the orbital magnetoresistance, including its angle dependence.We show that the origin of XMR in LaSb lies in its high mobility with diminishing Hall effect, where the high mobility leads to a strong magnetic-field dependence of the longitudinal magnetoconductance. Unlike a one-band material, when a system has two or more bands (Fermi pockets) with electron and hole carriers, the added conductance arising from the Hall effect is reduced, hence revealing the latent XMR enabled by the longitudinal magnetoconductance. With diminishing Hall effect, the magnetoresistivity is simply the inverse of the longitudinal magnetoconductivity, enabling the differentiation of the electron and hole contributions to the XMR, which varies with the strength and orientation of the magnetic field. This work demonstrates a convenient way to separate the dynamics of the charge carriers and to uncover the origin of XMR in multiband materials with anisotropic Fermi surfaces. Our approach can be readily applied to other XMR materials.

  16. Anisotropic giant magnetoresistance in NbSb2

    Science.gov (United States)

    Wang, Kefeng; Graf, D.; Li, Lijun; Wang, Limin; Petrovic, C.

    2014-01-01

    The magnetic field response of the transport properties of novel materials and then the large magnetoresistance effects are of broad importance in both science and application. We report large transverse magnetoreistance (the magnetoresistant ratio ~ 1.3 × 105% in 2 K and 9 T field, and 4.3 × 106% in 0.4 K and 32 T field, without saturation) and field-induced metal-semiconductor-like transition, in NbSb2 single crystal. Magnetoresistance is significantly suppressed but the metal-semiconductor-like transition persists when the current is along the ac-plane. The sign reversal of the Hall resistivity and Seebeck coefficient in the field, plus the electronic structure reveal the coexistence of a small number of holes with very high mobility and a large number of electrons with low mobility. The large MR is attributed to the change of the Fermi surface induced by the magnetic field which is related to the Dirac-like point, in addition to orbital MR expected for high mobility metals. PMID:25476239

  17. Thickness Dependent Interlayer Magnetoresistance in Multilayer Graphene Stacks

    Directory of Open Access Journals (Sweden)

    S. C. Bodepudi

    2016-01-01

    Full Text Available Chemical Vapor Deposition grown multilayer graphene (MLG exhibits large out-of-plane magnetoresistance due to interlayer magnetoresistance (ILMR effect. It is essential to identify the factors that influence this effect in order to explore its potential in magnetic sensing and data storage applications. It has been demonstrated before that the ILMR effect is sensitive to the interlayer coupling and the orientation of the magnetic field with respect to the out-of-plane (c-axis direction. In this work, we investigate the role of MLG thickness on ILMR effect. Our results show that the magnitude of ILMR effect increases with the number of graphene layers in the MLG stack. Surprisingly, thicker devices exhibit field induced resistance switching by a factor of at least ~107. This effect persists even at room temperature and to our knowledge such large magnetoresistance values have not been reported before in the literature at comparable fields and temperatures. In addition, an oscillatory MR effect is observed at higher field values. A physical explanation of this effect is presented, which is consistent with our experimental scenario.

  18. Chemical profile of meta-chlorophenylpiperazine (m-CPP) in ecstasy tablets by easy ambient sonic-spray ionization, X-ray fluorescence, ion mobility mass spectrometry and NMR.

    Science.gov (United States)

    Romão, Wanderson; Lalli, Priscila M; Franco, Marcos F; Sanvido, Gustavo; Schwab, Nicolas V; Lanaro, Rafael; Costa, José Luiz; Sabino, Bruno D; Bueno, Maria Izabel M S; de Sa, Gilberto F; Daroda, Romeu J; de Souza, Vanderlea; Eberlin, Marcos N

    2011-07-01

    Meta-chlorophenylpiperazine (m-CPP) is a new illicit drug that has been sold as ecstasy tablets. Easy ambient sonic-spray ionization mass spectrometry (EASI-MS) and X-ray fluorescence spectrometry (XRF) are shown to provide relatively simple and selective screening tools to distinguish m-CPP tablets from tablets containing amphetamines (mainly 3,4-methylenedioxymethamphetamine (MDMA)). EASI-MS detects the active ingredients in their protonated forms: [m-CPP + H](+) of m/z 197, [MDMA + H](+) of m/z 194, and [2MDMA + HCl + H](+) of m/z 423 and other ions from excipients directly on the tablet surface, providing distinct chemical fingerprints. XRF identifies Cl, K, Ca, Fe, and Cu as inorganic ingredients present in the m-CPP tablets. In contrast, higher Cl concentrations and a more diverse set of elements (P, Cl, Ca, Fe, Cu, Zn, Pt, V, Hf, Ti, Pt, and Zr) were found in MDMA tablets. Principal component analysis applied to XRF data arranged samples in three groups: m-CPP tablets (four samples), MDMA tablets (twenty three samples), and tablets with no active ingredients (three samples). The EASI-MS and XRF techniques were also evaluated to quantify m-CPP in ecstasy tablets, with concentrations ranging from 4 to 40 mg of m-CPP per tablets. The m-CPP could only be differentiated from its isomers (o-CPP and for the three isomers p-CPP) by traveling wave ion mobility mass spectrometry and NMR measurements.

  19. Measurement of NMDA Receptor Antagonist, CPP, in Mouse Plasma and Brain Tissue Following Systematic Administration Using Ion-Pair LCMS/MS.

    Science.gov (United States)

    Gemperline, Erin; Laha, Kurt; Scarlett, Cameron O; Pearce, Robert A; Li, Lingjun

    2014-08-21

    (RS)-3-(2-carboxypiperazin-4-yl)-propyl-1-phosphonic acid (CPP) is a competitive antagonist of the N-methyl-D-aspartate (NMDA) receptor and is routinely used with rodent models to investigate the role of NMDA receptors in brain function. This highly polar compound is difficult to separate from biological matrices. A reliable and sensitive assay was developed for the determination of CPP in plasma and tissue. In order to overcome the challenges relating to the physicochemical properties of CPP we employed an initial separation using solid phase extraction harnessing mixed-mode anion exchange. Then an ion-pair UPLC C18 separation was performed followed by MS/MS with a Waters Acquity UPLC interfaced to an AB Sciex QTrap 5500 mass spectrometer, which was operated in positive ion ESI mode. Multiple reaction monitoring (MRM) mode was utilized to detect the analyte and internal standard. The precursor to product ions used for quantitation for CPP and internal standard were m/z 252.958 → 207.100 and 334.955 → 136.033, respectively. This method was applied to a pharmacokinetic study and examined brain tissue and plasma concentrations following intravenous and intraperitoneal injections of CPP. The elimination half-life (t1/2) of CPP was 8.8 minutes in plasma and 14.3 minutes in brain tissue, and the plasma to brain concentration ratio was about 18:1. This pharmacokinetic data will aid the interpretation of the vast number of studies using CPP to investigate NMDA receptor function in rodents and the method itself can be used to study many other highly polar analytes of interest.

  20. Evaluation of AMPLICOR Neisseria gonorrhoeae PCR using cppB nested PCR and 16S rRNA PCR.

    Science.gov (United States)

    Farrell, D J

    1999-02-01

    Certain strains of Neisseria subflava and Neisseria cinerea are known to produce false-positive results with the AMPLICOR Neisseria gonorrhoeae PCR (Roche Diagnostic Systems, Branchburg, N.J.). The analytical sensitivity and analytical specificity of three PCR tests were assessed with 3 geographically diverse N. gonorrhoeae strains and 30 non-N. gonorrhoeae Neisseria spp. The sensitivities of the in-house nested cppB gene and the 16S rRNA PCR methods were greater than that of the AMPLICOR N. gonorrhoeae PCR with purified DNA from all 3 N. gonorrhoeae strains. Six of 14 clinical strains of N. subflava (1 from a vaginal swab, 5 from respiratory sites) produced false-positive AMPLICOR N. gonorrhoeae PCR results and were negative by the two other PCR methods. When applied to 207 clinical specimens selected from a population with a high prevalence ( approximately 9%) of infection, the results for 15 of 96 (15.6%) AMPLICOR-positive specimens and 14 of 17 (82.3%) AMPLICOR-equivocal specimens were not confirmed by the more sensitive nested cppB PCR method. Only 2 of 94 (2.1%) of AMPLICOR N. gonorrhoeae PCR-negative specimens from the same population tested positive by the nested cppB method. These results suggest that for this population the AMPLICOR N. gonorrhoeae PCR test is suitable as a screening test only and all positive results should be confirmed by a PCR method that is more specific and at least as sensitive. This study also illustrates that caution should be used when introducing commercially available nucleic acid amplification-based diagnostic tests into the regimens of tests used for populations not previously tested with these products.

  1. Methamphetamine, amphetamine, MDMA ('ecstasy'), MDA and mCPP modulate electrical and cholinergic input in PC12 cells.

    Science.gov (United States)

    Hondebrink, Laura; Meulenbelt, Jan; Rietjens, Saskia J; Meijer, Marieke; Westerink, Remco H S

    2012-03-01

    Reversal of the dopamine (DA) membrane transporter is the main mechanism through which many drugs of abuse increase DA levels. However, drug-induced modulation of exocytotic DA release by electrical (depolarization) and neurochemical inputs (e.g., acetylcholine (ACh)) may also contribute. We therefore investigated effects of methamphetamine, amphetamine, 3,4-methylenedioxymethamphetamine (MDMA), 3,4-methylenedioxyamphetamine (MDA) and meta-chlorophenylpiperazine (mCPP) (1-1000 μM) on these inputs by measuring drug-induced changes in basal, depolarization- and ACh-evoked intracellular calcium concentrations ([Ca(2+)](i)) using a dopaminergic model (PC12 cells) and Fura 2 calcium imaging. The strongest drug-induced effects were observed on cholinergic input. At 0.1mM all drugs inhibited the ACh-evoked [Ca(2+)](i) increases by 40-75%, whereas ACh-evoked [Ca(2+)](i) increases were nearly abolished following higher drug exposure (1mM, 80-97% inhibition). Additionally, high MDMA and mCPP concentrations increased basal [Ca(2+)](i), but only following prior stimulation with ACh. Interestingly, low concentrations of methamphetamine or amphetamine (10 μM) potentiated ACh-evoked [Ca(2+)](i) increases. Depolarization-evoked [Ca(2+)](i) increases were also inhibited following exposure to high drug concentrations, although drugs were less potent on this endpoint. Our data demonstrate that at high drug concentrations all tested drugs reduce stimulation-evoked increases in [Ca(2+)](i), thereby probably reducing dopaminergic output through inhibition of electrical and cholinergic input. Furthermore, the increases in basal [Ca(2+)](i) at high concentrations of MDMA and mCPP likely increases dopaminergic output. Similarly, the increases in ACh-evoked [Ca(2+)](i) upon cholinergic stimulation following exposure to low concentrations of amphetamines can contribute to drug-induced increases in DA levels observed in vivo. Finally, this study shows that mCPP, which is regularly found in

  2. Large anisotropic normal-state magnetoresistance in clean MgB2 thin films.

    Science.gov (United States)

    Li, Qi; Liu, B T; Hu, Y F; Chen, J; Gao, H; Shan, L; Wen, H H; Pogrebnyakov, A V; Redwing, J M; Xi, X X

    2006-04-28

    We report a large normal-state magnetoresistance with temperature-dependent anisotropy in very clean epitaxial MgB2 thin films (residual resistivity much smaller than 1 microOmega cm) grown by hybrid physical-chemical vapor deposition. The magnetoresistance shows a complex dependence on the orientation of the applied magnetic field, with a large magnetoresistance (Delta(rho)/(rho)0=136%) observed for the field H perpendicular ab plane. The angular dependence changes dramatically as the temperature is increased, and at high temperatures the magnetoresistance maximum changes to H||ab. We attribute the large magnetoresistance and the evolution of its angular dependence with temperature to the multiple bands with different Fermi surface topology in MgB2 and the relative scattering rates of the sigma and pi bands, which vary with temperature due to stronger electron-phonon coupling for the sigma bands.

  3. Systematic Angular Study of Magnetoresistance in Permalloy Connected Kagome Artificial Spin Ice

    Science.gov (United States)

    Park, Jungsik; Le, Brian; Watts, Justin; Leighton, Chris; Samarth, Nitin; Schiffer, Peter

    Artificial spin ices are nanostructured two-dimensional arrays of ferromagnetic elements, where frustrated interactions lead to unusual collective magnetic behavior. Here we report a room-temperature magnetoresistance study of connected permalloy (Ni81Fe19) kagome artificial spin ice networks, wherein the direction of the applied in-plane magnetic field is systematically varied. We measure both the longitudinal and transverse magnetoresistance in these structures, and we find certain transport geometries of the network show strong angular sensitivity - even small variations in the applied field angle lead to dramatic changes of the magnetoresistance response. We also investigate the magnetization reversal of the networks using magnetic force microscopy (MFM), demonstrating avalanche behavior in the magnetization reversal. The magnetoresistance features are analyzed using an anisotropic magnetoresistance (AMR) model. Supported by the US Department of Energy. Work at the University of Minnesota was supported by Seagate Technology, NSF MRSEC, and a Marie Curie International Outgoing Fellowship within the 7th European Community Framework Programme.

  4. Magnetoresistive ceramics. Recent progress: from basic understanding to applications

    Directory of Open Access Journals (Sweden)

    Fontcuberta, J.

    2004-06-01

    Full Text Available Magnetoresistive ceramics, based on half-metallic ferromagnetic oxides have received renewed attention in the last few years because of their possible applications. Here, we review some recent progress on the development of magnetoresistive ceramic materials such as La2/3Sr1/ 3MnO3 and Sr2FeMoO6 ceramic materials. We shall revisit their basic properties, the strategies that have been employed to understand and to improve their intrinsic properties, pushing the limits of their operation at temperatures well above room-temperature, and the development of some applications. This effort has required the contribution of a number of actors. Starting from research laboratories, it has progressively involved industries that nowadays are able to supply high quality raw-materials or to manufacture magnetoresistive components at large scale.

    Las cerámicas magnetorresistivas, basadas en óxidos semi-metálicos ferromagnéticos han recibido una renovada atención en los últimos años debido a sus posibles aplicaciones. Se revisan aquí algunos de los recientes progresos en el desarrollo de materiales cerámicos magnetorresistivos como La2/3Sr1/3MnO3 y Sr2FeMoO6. Se revisitan sus propiedades básicas, las estrategias empleadas para entender y mejorar sus propiedades intrínsecas, llevando sus límites de operación a temperaturas muy por encima de temperatura ambiente, y el desarrollo de algunas aplicaciones. Este esfuerzo ha requerido al contribución de un gran número de actores. Comenzando por laboratorios de investigación, se ha implicado progresivamente a industrias que hoy en día están capacitadas para suministrar materias primas de alta calidad o para fabricar componentes magnetorresistivos a gran escala.

  5. Lower baseline plasma cortisol and prolactin together with increased body temperature and higher mCPP-induced cortisol responses in men with pedophilia.

    Science.gov (United States)

    Maes, M; van West, D; De Vos, N; Westenberg, H; Van Hunsel, F; Hendriks, D; Cosyns, P; Scharpé, S

    2001-01-01

    There is some evidence that hormonal and serotonergic alterations may play a role in the pathophysiology of paraphilias. The aims of the present study were to examine: 1) baseline plasma cortisol, plasma prolactin, and body temperature; and 2) cortisol, prolactin, body temperature, as well as behavioral responses to meta-chlorophenylpiperazine (mCPP) and placebo in pedophiles and normal men. Pedophiles showed significantly lower baseline plasma cortisol and prolactin concentrations and a higher body temperature than normal volunteers. The mCPP-induced cortisol responses were significantly greater in pedophiles than in normal volunteers. In normal volunteers, mCPP-induced a hyperthermic response, whereas in pedophiles no such response was observed. mCPP induced different behavioral responses in pedophiles than in normal men. In pedophiles, but not in normal men, mCPP increased the sensations "feeling dizzy, " "restless," and "strange" and decreased the sensation "feeling hungry". The results suggest that there are several serotonergic disturbances in pedophiles. It is hypothesized that the results are compatible with a decreased activity of the serotonergic presynaptic neuron and a 5-HT2 postsynaptic receptor hyperresponsivity.

  6. Superconducting spin-triplet-MRAM with infinite magnetoresistance ratio

    Energy Technology Data Exchange (ETDEWEB)

    Lenk, Daniel; Ullrich, Aladin; Obermeier, Guenter; Mueller, Claus; Krug von Nidda, Hans-Albrecht; Horn, Siegfried; Tidecks, Reinhard [Institut fuer Physik, Universitaet Augsburg, D-86159 Augsburg (Germany); Morari, Roman [Institut fuer Physik, Universitaet Augsburg, D-86159 Augsburg (Germany); D. Ghitsu Institute of Electronic Engineering and Nanotechnologies ASM, Academiei Str. 3/3, MD2028 Kishinev (Moldova, Republic of); Solid State Physics Department, Kazan Federal University, 420008 Kazan (Russian Federation); Zdravkov, Vladimir I. [Institut fuer Physik, Universitaet Augsburg, D-86159 Augsburg (Germany); D. Ghitsu Institute of Electronic Engineering and Nanotechnologies ASM, Academiei Str. 3/3, MD2028 Kishinev (Moldova, Republic of); Institute of Applied Physics and Interdisciplinary Nanoscience Center, Universitaet Hamburg, Jungiusstrasse 9A, D-20355 Hamburg (Germany); Sidorenko, Anatoli S. [D. Ghitsu Institute of Electronic Engineering and Nanotechnologies ASM, Academiei Str. 3/3, MD2028 Kishinev (Moldova, Republic of); Tagirov, Lenar R. [Institut fuer Physik, Universitaet Augsburg, D-86159 Augsburg (Germany); Solid State Physics Department, Kazan Federal University, 420008 Kazan (Russian Federation)

    2016-07-01

    We fabricated a nanolayered hybrid superconductor-ferromagnet spin-valve structure, i.e. the superconducting transition temperature of this structure depends on its magnetic history. The observed spin-valve effect is based on the generation of the long range odd in frequency triplet component, arising from a non-collinear relative orientation of the constituent ferromagnetic layers. We investigated the effect both as a function of the sweep amplitude of the magnetic field, determining the magnetic history, and the applied transport current. Moreover, we demonstrate the possibility of switching the system from the normal o the superconducting state by applying field pulses, yielding an infinite magnetoresistance ratio.

  7. Micromagnetic Simulation of Transfer Curve in Giant-Magnetoresistive Head

    Institute of Scientific and Technical Information of China (English)

    SHE Sheng-Xian; WEI Dan; ZHENG Yang; Qu Bing-Jun; REN Tian-Ling; LIU Xi; WEI Fu-Lin

    2009-01-01

    The transfer curve of the giant-magnetoresistive(GMR)magnetic head represents its most important property in applications,and it is calculated by the micromagnetic modeling of the free layer and the pinned layer in the heart of the GMR head.Affections of the bias hard magnetic layer and the anti-ferromagnetic pinning layer are modeled by effective magnetic Selds.The simulated transfer curve agrees with experiment quite well,therefore the values of these effective magnetic fields can be determined by the model.A synthetic antiferromagnetic spin valve structure GMR head is also analyzed for comparison.

  8. Angular magnetoresistance in semiconducting undoped amorphous carbon thin films

    Energy Technology Data Exchange (ETDEWEB)

    Sagar, Rizwan Ur Rehman; Saleemi, Awais Siddique; Zhang, Xiaozhong, E-mail: xzzhang@tsinghua.edu.cn [Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, People' s Republic of China and Beijing National Center for Electron Microscopy, Beijing 100084 (China)

    2015-05-07

    Thin films of undoped amorphous carbon thin film were fabricated by using Chemical Vapor Deposition and their structure was investigated by using High Resolution Transmission Electron Microscopy and Raman Spectroscopy. Angular magnetoresistance (MR) has been observed for the first time in these undoped amorphous carbon thin films in temperature range of 2 ∼ 40 K. The maximum magnitude of angular MR was in the range of 9.5% ∼ 1.5% in 2 ∼ 40 K. The origin of this angular MR was also discussed.

  9. The electrical conductivity and longitudinal magnetoresistance of metallic nanotubes

    Science.gov (United States)

    Moraga, Luis; Henriquez, Ricardo; Bravo, Sergio; Solis, Basilio

    2017-03-01

    Proceeding from exact solutions of the Boltzmann transport equation in the relaxation time approximation, we present formulas for the electrical conductivity and longitudinal magnetoresistance of single-crystalline cylindrical nanotubes. The effects of surface scattering are taken into account by introducing different specularity parameters at the inner and outer surfaces. For small values of the inner diameter, these formulas reduce to the respective expressions for cylindrical nanowires. It is found that the existing measurements of the resistivity of nanotubes (Venkata Kamalakar and Raychaudhuri, New J. Phys. 14, 043032 (2012)) can be accurately described by this formalism.

  10. Magnetoresistance of galfenol-based magnetic tunnel junction

    Science.gov (United States)

    Gobaut, B.; Vinai, G.; Castán-Guerrero, C.; Krizmancic, D.; Rafaqat, H.; Roddaro, S.; Rossi, G.; Panaccione, G.; Eddrief, M.; Marangolo, M.; Torelli, P.

    2015-12-01

    The manipulation of ferromagnetic layer magnetization via electrical pulse is driving an intense research due to the important applications that this result will have on memory devices and sensors. In this study we realized a magnetotunnel junction in which one layer is made of Galfenol (Fe1-xGax) which possesses one of the highest magnetostrictive coefficient known. The multilayer stack has been grown by molecular beam epitaxy and e-beam evaporation. Optical lithography and physical etching have been combined to obtain 20x20 micron sized pillars. The obtained structures show tunneling conductivity across the junction and a tunnel magnetoresistance (TMR) effect of up to 11.5% in amplitude.

  11. The electrical conductivity and longitudinal magnetoresistance of metallic nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Moraga, Luis, E-mail: luismoragajaramillo@gmail.com [Universidad Central de Chile, Toesca 1783, Santiago 8370178 (Chile); Henriquez, Ricardo, E-mail: rahc.78@gmail.com [Departamento de Física, Universidad Técnica Federico Santa María, Av. España 1680, Valparaíso (Chile); Bravo, Sergio, E-mail: bravo.castillo.sergio@gmail.com [Departamento de Física, Universidad Técnica Federico Santa María, Av. España 1680, Valparaíso (Chile); Solis, Basilio, E-mail: bsolis1984@gmail.com [Argelander-Institut für Astronomie, Auf dem Hügel 71, 53121 Bonn (Germany)

    2017-03-01

    Proceeding from exact solutions of the Boltzmann transport equation in the relaxation time approximation, we present formulas for the electrical conductivity and longitudinal magnetoresistance of single-crystalline cylindrical nanotubes. The effects of surface scattering are taken into account by introducing different specularity parameters at the inner and outer surfaces. For small values of the inner diameter, these formulas reduce to the respective expressions for cylindrical nanowires. It is found that the existing measurements of the resistivity of nanotubes (Venkata Kamalakar and Raychaudhuri, New J. Phys. 14, 043032 (2012)) can be accurately described by this formalism.

  12. Magneto-resistive and spin valve heads fundamentals and applications

    CERN Document Server

    Mallinson, John C

    2002-01-01

    This book is aims to be a comprehensive source on the physics and engineering of magneto-resistive heads. Most of the material is presented in a nonmathematical manner to make it more digestible for researchers, students, developers, and engineers.In addition to revising and updating material available in the first edition, Mallinson has added nine new chapters dealing with various aspects concerning spin valves, the electron spin tunneling effect, the electrostatic discharge effects, read amplifiers, and signal-to-noise ratios, making this a completely up-to-date reference.Th

  13. Interfacial contribution to thickness dependent in-plane anisotropic magnetoresistance

    Directory of Open Access Journals (Sweden)

    M. Tokaç

    2015-12-01

    Full Text Available We have studied in-plane anisotropic magnetoresistance (AMR in cobalt films with overlayers having designed electrically interface transparency. With an electrically opaque cobalt/overlayer interface, the AMR ratio is shown to vary in inverse proportion to the cobalt film thickness; an indication that in-plane AMR is a consequence of anisotropic scattering with both volume and interfacial contributions. The interface scattering anisotropy opposes the volume scattering contribution, causing the AMR ratio to diminish as the cobalt film thickness is reduced. An intrinsic interface effect explains the significantly reduced AMR ratio in ultra-thin films.

  14. Ultrahigh magnetoresistance at room temperature in molecular wires.

    Science.gov (United States)

    Mahato, R N; Lülf, H; Siekman, M H; Kersten, S P; Bobbert, P A; de Jong, M P; De Cola, L; van der Wiel, W G

    2013-07-19

    Systems featuring large magnetoresistance (MR) at room temperature and in small magnetic fields are attractive owing to their potential for applications in magnetic field sensing and data storage. Usually, the magnetic properties of materials are exploited to achieve large MR effects. Here, we report on an exceptionally large (>2000%), room-temperature, small-field (a few millitesla) MR effect in one-dimensional, nonmagnetic systems formed by molecular wires embedded in a zeolite host crystal. This ultrahigh MR effect is ascribed to spin blockade in one-dimensional electron transport. Its generic nature offers very good perspectives to exploit the effect in a wide range of low-dimensional systems.

  15. Tailoring magnetoresistance at the atomic level: An ab initio study

    KAUST Repository

    Tao, Kun

    2012-01-05

    The possibility of manipulating the tunneling magnetoresistance (TMR) of antiferromagnetic nanostructures is predicted in the framework of ab initio calculations. By the example of a junction composed of an antiferromagnetic dimer and a spin-polarized scanning tunneling microscopy tip we show that the TMR can be tuned and even reversed in sign by lateral and vertical movements of the tip. Moreover, our finite-bias calculations demonstrate that the magnitude and the sign of the TMR can also be tuned by an external voltage. © 2012 American Physical Society.

  16. Enhanced Transverse Magnetoresistive Effect in Semiconducting Diamond Films

    Institute of Scientific and Technical Information of China (English)

    WANG Wan-Lu; LIAO Ke-Jun; WANG Bi-Ben

    2000-01-01

    A very large magnetoresistive effect in both homoepitaxial and heteroepitaxial semiconducting diamond films by chemical vapor deposition has been observed. The changes in the resistance of the films strongly depend on both magnetic field intensity and geometric form of the samples. The effect of disk structure is greater than that of stripe type samples, also variation in the resistance of homoepitaxial diamond films is greater than that of eteroepitaxial diamond films. The resistance of homoepitaxial diamond films with the disk structure is increased y a factor of 2.1 at room temperature under magnetic field intensity of 5 T, but only 0.80 for heteroepitaxial diamond films.

  17. (1S, 3S)-3-amino-4-difluoromethylenyl-1-cyclopentanoic acid (CPP-115), a potent gamma-aminobutyric acid aminotransferase inactivator for the treatment of cocaine addiction

    DEFF Research Database (Denmark)

    Pan, Yue; Gerasimov, Madina R; Kvist, Trine

    2012-01-01

    Vigabatrin, a GABA aminotransferase (GABA-AT) inactivator, is used to treat infantile spasms and refractory complex partial seizures and is in clinical trials to treat addiction. We evaluated a novel GABA-AT inactivator (CPP-115) and observed that it does not exhibit other GABAergic or off...... at 1/300-1/600th the dose of vigabatrin. It also blocks expression of cocaine-induced conditioned place preference at a dose 1/300th that of vigabatrin. Electroretinographic (ERG) responses in rats treated with CPP-115, at doses 20-40 times higher than those needed to treat addiction in rats, exhibited...... reductions in ERG responses, which were less than the reductions observed in rats treated with vigabatrin at the same dose needed to treat addiction in rats. In conclusion, CPP-115 can be administered at significantly lower doses than vigabatrin, which suggests a potential new treatment for addiction...

  18. Unidirectional spin Hall magnetoresistance in ferromagnet/normal metal bilayers

    Science.gov (United States)

    Avci, Can Onur; Garello, Kevin; Ghosh, Abhijit; Gabureac, Mihai; Alvarado, Santos F.; Gambardella, Pietro

    2015-07-01

    Magnetoresistive effects are usually invariant on inversion of the magnetization direction. In non-centrosymmetric conductors, however, nonlinear resistive terms can give rise to a current dependence that is quadratic in the applied voltage and linear in the magnetization. Here we demonstrate that such conditions are realized in simple bilayer metal films where the spin-orbit interaction and spin-dependent scattering couple the current-induced spin accumulation to the electrical conductivity. We show that the longitudinal resistance of Ta|Co and Pt|Co bilayers changes when reversing the polarity of the current or the sign of the magnetization. This unidirectional magnetoresistance scales linearly with current density and has opposite sign in Ta and Pt, which we associate with the modification of the interface scattering potential induced by the spin Hall effect in these materials. Our results suggest a route to control the resistance and detect magnetization switching in spintronic devices using a two-terminal geometry, which applies also to heterostructures including topological insulators.

  19. Large tunneling magnetoresistance in octahedral Fe3O4 nanoparticles

    Directory of Open Access Journals (Sweden)

    Arijit Mitra

    2016-05-01

    Full Text Available We have observed large tunneling Magnetoresistance (TMR in amine functionalized octahedral nanoparticle assemblies. Amine monolayer on the surface of nanoparticles acts as an insulating barrier between the semimetal Fe3O4 nanoparticles and provides multiple tunnel junctions where inter-granular tunneling is plausible. The tunneling magnetoresistance recorded at room temperature is 38% which increases to 69% at 180 K. When the temperature drops below 150 K, coulomb staircase is observed in the current versus voltage characteristics as the charging energy exceeds the thermal energy. A similar study is also carried out with spherical nanoparticles. A 24% TMR is recorded at room temperature which increases to 41% at 180 K for spherical particles. Mössbauer spectra reveal better stoichiometry for octahedral particles which is attainable due to lesser surface disorder and strong amine coupling at the facets of octahedral Fe3O4 nanoparticles. Less stoichiometric defect in octahedral nanoparticles leads to a higher value of spin polarization and therefore larger TMR in octahedral nanoparticles.

  20. Exchange biased anisotropic magnetoresistance in Co/CoO bilayer

    Science.gov (United States)

    Sahoo, S.; Polisetty, S.; Wang, Yi; Mukherjee, T.; He, Xi; Binek, Ch.

    2008-03-01

    We measured the anisotropic magnetoresistance of a Co(11nm)/CoO bilayer in exchange biased and unbiased states. The bilayer was fabricated on a-Al2O3 substrate maintained at 300^oC by molecular beam epitaxy at a base pressure of 10-11mbar. θ-2θ X-ray diffraction scans reveal hcp (001) texture of the Co film. No peak associated with the naturally formed CoO top layer was identified. Small angle X-ray reflectivity scans yield the Co and CoO thicknesses as 11 and 2.4nm, respectively. Exchange bias was obtained from field cooled magnetoresistance measurements at various temperatures carried out in a closed cycle cryostat. Exchange bias varies quasi linearly with temperature and vanishes at the blocking temperature, TB=97K. The latter is less than 2/3 of the bulk N'eel temperature allowing to estimate the T=0 antiferromagnetic correlation length of CoO to be 1.84 nm in accordance with the geometrical confinement.

  1. Angle Dependence of the Orbital Magnetoresistance in Bismuth

    Directory of Open Access Journals (Sweden)

    Aurélie Collaudin

    2015-06-01

    Full Text Available We present an extensive study of angle-dependent transverse magnetoresistance in bismuth, with a magnetic field perpendicular to the applied electric current and rotating in three distinct crystallographic planes. The observed angular oscillations are confronted with the expectations of semiclassic transport theory for a multivalley system with anisotropic mobility and the agreement allows us to quantify the components of the mobility tensor for both electrons and holes. A quadratic temperature dependence is resolved. As Hartman argued long ago, this indicates that inelastic resistivity in bismuth is dominated by carrier-carrier scattering. At low temperature and high magnetic field, the threefold symmetry of the lattice is suddenly lost. Specifically, a 2π/3 rotation of magnetic field around the trigonal axis modifies the amplitude of the magnetoresistance below a field-dependent temperature. By following the evolution of this anomaly as a function of temperature and magnetic field, we map the boundary in the (field, temperature plane separating two electronic states. In the less symmetric state, confined to low temperature and high magnetic field, the three Dirac valleys cease to be rotationally invariant. We discuss the possible origins of this spontaneous valley polarization, including a valley-nematic scenario.

  2. Tunable magnetoresistance in an asymmetrically coupled single-molecule junction

    Science.gov (United States)

    Warner, Ben; El Hallak, Fadi; Prüser, Henning; Sharp, John; Persson, Mats; Fisher, Andrew J.; Hirjibehedin, Cyrus F.

    2015-03-01

    Phenomena that are highly sensitive to magnetic fields can be exploited in sensors and non-volatile memories. The scaling of such phenomena down to the single-molecule level may enable novel spintronic devices. Here, we report magnetoresistance in a single-molecule junction arising from negative differential resistance that shifts in a magnetic field at a rate two orders of magnitude larger than Zeeman shifts. This sensitivity to the magnetic field produces two voltage-tunable forms of magnetoresistance, which can be selected via the applied bias. The negative differential resistance is caused by transient charging of an iron phthalocyanine (FePc) molecule on a single layer of copper nitride (Cu2N) on a Cu(001) surface, and occurs at voltages corresponding to the alignment of sharp resonances in the filled and empty molecular states with the Cu(001) Fermi energy. An asymmetric voltage-divider effect enhances the apparent voltage shift of the negative differential resistance with magnetic field, which inherently is on the scale of the Zeeman energy. These results illustrate the impact that asymmetric coupling to metallic electrodes can have on transport through molecules, and highlight how this coupling can be used to develop molecular spintronic applications.

  3. Δ B mechanism for fringe-field organic magnetoresistance

    Science.gov (United States)

    Cox, M.; Kersten, S. P.; Veerhoek, J. M.; Bobbert, P.; Koopmans, B.

    2015-04-01

    Fringe fields emanating from magnetic domain structures can give rise to magnetoresistance in organic semiconductors. In this article, we explain these magnetic-field effects in terms of a Δ B mechanism. This mechanism describes how variations in magnetic-field strength between two polaron hopping sites can induce a difference in precessional motion of the polaron spins, leading to mixing of their spin states. In order to experimentally explore the fringe-field effects, polymer thin-film devices on top of a rough in-plane magnetized cobalt layer are investigated. The cobalt layer can be described by a distribution of out-of-plane magnetic anisotropies, most likely induced by thickness variations in the cobalt. With a magnetic field perpendicular to the cobalt layer, fringe fields are created because some domains are magnetized out of plane whereas the magnetization of other domains remains approximately in plane. By varying the distance between the polymer layer and the cobalt layer, we find that the magnetoresistance arising from these fringe fields reduces with the gradient in the fringe fields, in agreement with the Δ B mechanism.

  4. Observation of large low-field magnetoresistance in spinel cobaltite: A new half-metal

    KAUST Repository

    Li, Peng

    2015-12-10

    Low-field magnetoresistance is an effective and energy-saving way to use half-metallic materials in magnetic reading heads and magnetic random access memory. Common spin-polarized materials with low field magnetoresistance effect are perovskite-type manganese, cobalt, and molybdenum oxides. In this study, we report a new type of spinel cobaltite materials, self-assembled nanocrystalline NiCo2O4, which shows large low field magnetoresistance as large as –19.1% at 0.5 T and –50% at 9 T (2 K). The large low field magnetoresistance is attributed to the fast magnetization rotation of the core nanocrystals. The surface spin-glass is responsible for the observed weak saturation of magnetoresistance under high fields. Our calculation demonstrates that the half-metallicity of NiCo2O4 comes from the hopping eg electrons within the tetrahedral Co-atoms and the octahedral Ni-atoms. The discovery of large low-field magnetoresistance in simple spinel oxide NiCo2O4, a non-perovskite oxide, leads to an extended family of low-field magnetoresistance materials. (© 2016 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim)

  5. Spin-current-induced magnetoresistance in trilayer structure with nonmagnetic metallic interlayer

    Science.gov (United States)

    Iguchi, Ryo; Sato, Koji; Uchida, Ken-ichi; Saitoh, Eiji

    2017-04-01

    We have theoretically investigated the spin Hall magnetoresistance (SMR) and Rashba–Edelstein magnetoresistance (REMR), mediated by spin currents, in a ferrimagnetic insulator/nonmagnetic metal/heavy metal system in the diffusive regime. The magnitude of both SMR and REMR decreases with increasing thickness of the interlayer because of the current shunting effect and the reduction in spin accumulation across the interlayer. The latter contribution is due to driving a spin current and persists even in the absence of spin relaxation, which is essential for understanding the magnetoresistance ratio in trilayer structures.

  6. Effect of thermal-annealing on the magnetoresistance of manganite-based junctions

    Institute of Scientific and Technical Information of China (English)

    Xie Yan-Wu; Shen Bao-Gen; Sun Ji-Rong

    2008-01-01

    Thermal-annealing has been widely used in modulating the oxygen content of manganites. In this work, we have studied the effect of annealing on the transport properties and magnetoresistance of junctions composed of a La0.9Ca0.1MnO3+δ film and a Nb-doped SrTiO3 substrate. We have demonstrated that the magnetoresistance of junctions is strongly dependent on the annealing conditions: From the junction annealed-in-air to the junction annealed-in-vacuum, the magnetoresistance near 0-V bias can vary from ~-60% to~0. A possible mechanism accounting for this phenomenon is discussed.

  7. Extraordinary Magnetoresistance Effect in Semiconductor/Metal Hybrid Structure

    KAUST Repository

    Sun, Jian

    2013-06-27

    In this dissertation, the extraordinary magnetoresistance (EMR) effect in semiconductor/metal hybrid structures is studied to improve the performance in sensing applications. Using two-dimensional finite element simulations, the geometric dependence of the output sensitivity, which is a more relevant parameter for EMR sensors than the magnetoresistance (MR), is studied. The results show that the optimal geometry in this case is different from the geometry reported before, where the MR ratio was optimized. A device consisting of a semiconductor bar with length/width ratio of 5~10 and having only 2 contacts is found to exhibit the highest sensitivity. A newly developed three-dimensional finite element model is employed to investigate parameters that have been neglected with the two dimensional simulations utilized so far, i.e., thickness of metal shunt and arbitrary semiconductor/metal interface. The simulations show the influence of those parameters on the sensitivity is up to 10 %. The model also enables exploring the EMR effect in planar magnetic fields. In case of a bar device, the sensitivity to planar fields is about 15 % to 20 % of the one to perpendicular fields. 5 A “top-contacted” structure is proposed to reduce the complexity of fabrication, where neither patterning of the semiconductor nor precise alignment is required. A comparison of the new structure with a conventionally fabricated device shows that a similar magnetic field resolution of 24 nT/√Hz is obtained. A new 3-contact device is developed improving the poor low-field sensitivity observed in conventional EMR devices, resulting from its parabolic magnetoresistance response. The 3-contact device provides a considerable boost of the low field response by combining the Hall effect with the EMR effect, resulting in an increase of the output sensitivity by 5 times at 0.01 T compared to a 2-contact device. The results of this dissertation provide new insights into the optimization of EMR devices

  8. Magnetoresistance of galfenol-based magnetic tunnel junction

    Energy Technology Data Exchange (ETDEWEB)

    Gobaut, B., E-mail: benoit.gobaut@elettra.eu [Sincrotrone Trieste S.C.p.A., S.S. 14 Km 163.5, Area Science Park, 34149 Trieste (Italy); Vinai, G.; Castán-Guerrero, C.; Krizmancic, D.; Panaccione, G.; Torelli, P. [Laboratorio TASC, IOM-CNR, S.S. 14km 163.5, Basovizza, 34149 Trieste (Italy); Rafaqat, H. [Laboratorio TASC, IOM-CNR, S.S. 14km 163.5, Basovizza, 34149 Trieste (Italy); ICTP, Trieste (Italy); Roddaro, S. [Laboratorio TASC, IOM-CNR, S.S. 14km 163.5, Basovizza, 34149 Trieste (Italy); NEST, Scuola Normale Superiore and Istituto Nanoscienze-CNR, Piazza S. Silvestro 12, 56127 Pisa (Italy); Rossi, G. [Laboratorio TASC, IOM-CNR, S.S. 14km 163.5, Basovizza, 34149 Trieste (Italy); Dipartimento di Fisica, Università di Milano, via Celoria 16, 20133 Milano (Italy); Eddrief, M.; Marangolo, M. [Sorbonne Universités, UPMC Paris 06, CNRS-UMR 7588, Institut des Nanosciences de Paris, 75005, Paris (France)

    2015-12-15

    The manipulation of ferromagnetic layer magnetization via electrical pulse is driving an intense research due to the important applications that this result will have on memory devices and sensors. In this study we realized a magnetotunnel junction in which one layer is made of Galfenol (Fe{sub 1-x}Ga{sub x}) which possesses one of the highest magnetostrictive coefficient known. The multilayer stack has been grown by molecular beam epitaxy and e-beam evaporation. Optical lithography and physical etching have been combined to obtain 20x20 micron sized pillars. The obtained structures show tunneling conductivity across the junction and a tunnel magnetoresistance (TMR) effect of up to 11.5% in amplitude.

  9. Magnetoresistance in permalloy/GaMnAs circular microstructures

    Science.gov (United States)

    Guenther, Justin Michael

    When two ferromagnetic materials are deposited directly on top of one another, their magnetic moments lock together and will no longer switch independently. This effect is known as exchange spring coupling. Reports in literature indicate that a bilayer composed of GaMnAs and permalloy may be a rare exception. Such a bilayer would allow for independent switching and, as a result, giant magnetoresistance. For this thesis, we verified the independent switching of continuous films of GaMnAs and expanded on existing literature. We also investigated GMR in bilayers. Samples were fabricated and measured using novel techniques and software developed specifically for this project. Transport measurements of GaMnAs/Py bilayers revealed a minimal to non-existent GMR effect; instead, the main discernible effect was due to AMR of the bulk substrate of the samples. This thesis also details the construction process of an inexpensive, temporary cleanroom environment.

  10. Chiral magnetoresistance in the Weyl semimetal NbP

    Science.gov (United States)

    Niemann, Anna Corinna; Gooth, Johannes; Wu, Shu-Chun; Bäßler, Svenja; Sergelius, Philip; Hühne, Ruben; Rellinghaus, Bernd; Shekhar, Chandra; Süß, Vicky; Schmidt, Marcus; Felser, Claudia; Yan, Binghai; Nielsch, Kornelius

    2017-03-01

    NbP is a recently realized Weyl semimetal (WSM), hosting Weyl points through which conduction and valence bands cross linearly in the bulk and exotic Fermi arcs appear. The most intriguing transport phenomenon of a WSM is the chiral anomaly-induced negative magnetoresistance (NMR) in parallel electric and magnetic fields. In intrinsic NbP the Weyl points lie far from the Fermi energy, making chiral magneto-transport elusive. Here, we use Ga-doping to relocate the Fermi energy in NbP sufficiently close to the W2 Weyl points, for which the different Fermi surfaces are verified by resultant quantum oscillations. Consequently, we observe a NMR for parallel electric and magnetic fields, which is considered as a signature of the chiral anomaly in condensed-matter physics. The NMR survives up to room temperature, making NbP a versatile material platform for the development of Weyltronic applications.

  11. Resonant tunnel magnetoresistance in a double magnetic tunnel junction

    KAUST Repository

    Useinov, Arthur

    2011-08-09

    We present quasi-classical approach to calculate a spin-dependent current and tunnel magnetoresistance (TMR) in double magnetic tunnel junctions (DMTJ) FML/I/FMW/I/FMR, where the magnetization of the middle ferromagnetic metal layer FMW can be aligned parallel or antiparallel with respect to the fixed magnetizations of the left FML and right FMR ferromagnetic electrodes. The transmission coefficients for components of the spin-dependent current, and TMR are calculated as a function of the applied voltage. As a result, we found a high resonant TMR. Thus, DMTJ can serve as highly effective magnetic nanosensor for biological applications, or as magnetic memory cells by switching the magnetization of the inner ferromagnetic layer FMW.© Springer Science+Business Media, LLC 2011.

  12. Space magnetometer based on an anisotropic magnetoresistive hybrid sensor

    Science.gov (United States)

    Brown, P.; Whiteside, B. J.; Beek, T. J.; Fox, P.; Horbury, T. S.; Oddy, T. M.; Archer, M. O.; Eastwood, J. P.; Sanz-Hernández, D.; Sample, J. G.; Cupido, E.; O'Brien, H.; Carr, C. M.

    2014-12-01

    We report on the design and development of a low resource, dual sensor vector magnetometer for space science applications on very small spacecraft. It is based on a hybrid device combining an orthogonal triad of commercial anisotropic magnetoresistive (AMR) sensors with a totem pole H-Bridge drive on a ceramic substrate. The drive enables AMR operation in the more sensitive flipped mode and this is achieved without the need for current spike transmission down a sensor harness. The magnetometer has sensitivity of better than 3 nT in a 0-10 Hz band and a total mass of 104 g. Three instruments have been launched as part of the TRIO-CINEMA space weather mission, inter-calibration against the International Geomagnetic Reference Field model makes it possible to extract physical signals such as field-aligned current deflections of 20-60 nT within an approximately 45 000 nT ambient field.

  13. Giant magnetoresistance of electrodeposited Cu–Co–Ni alloy films

    Indian Academy of Sciences (India)

    İ H Karahan; Ö F Bakkaloğlu; M Bedir

    2007-01-01

    Electrodeposition of CuCoNi alloys was performed in an acid–citrate medium. Nickel density parameter was varied in order to analyse its influence on the magnetoresistance. The structure and giant magneto- resistance (GMR) effect of CuCoNi alloys have been investigated. The maximum value for GMR ratio, at room temperature is 1% at a field of 12 kOe, and at 20 K is 2.1% at a field of 8.5 kOe for 3.1 Ni. The MR ratio of Cu100−−CoNi alloys first increases and then decreases monotonically with increasing Ni content. The GMR and its dependence on magnetic field and temperature were discussed.

  14. Compensated Semimetal LaSb with Unsaturated Magnetoresistance

    Science.gov (United States)

    Zeng, L.-K.; Lou, R.; Wu, D.-S.; Xu, Q. N.; Guo, P.-J.; Kong, L.-Y.; Zhong, Y.-G.; Ma, J.-Z.; Fu, B.-B.; Richard, P.; Wang, P.; Liu, G. T.; Lu, L.; Huang, Y.-B.; Fang, C.; Sun, S.-S.; Wang, Q.; Wang, L.; Shi, Y.-G.; Weng, H. M.; Lei, H.-C.; Liu, K.; Wang, S.-C.; Qian, T.; Luo, J.-L.; Ding, H.

    2016-09-01

    By combining angle-resolved photoemission spectroscopy and quantum oscillation measurements, we performed a comprehensive investigation on the electronic structure of LaSb, which exhibits near-quadratic extremely large magnetoresistance (XMR) without any sign of saturation at magnetic fields as high as 40 T. We clearly resolve one spherical and one intersecting-ellipsoidal hole Fermi surfaces (FSs) at the Brillouin zone (BZ) center Γ and one ellipsoidal electron FS at the BZ boundary X . The hole and electron carriers calculated from the enclosed FS volumes are perfectly compensated, and the carrier compensation is unaffected by temperature. We further reveal that LaSb is topologically trivial but shares many similarities with the Weyl semimetal TaAs family in the bulk electronic structure. Based on these results, we have examined the mechanisms that have been proposed so far to explain the near-quadratic XMR in semimetals.

  15. Chiral magnetoresistance in the Weyl semimetal NbP

    Science.gov (United States)

    Niemann, Anna Corinna; Gooth, Johannes; Wu, Shu-Chun; Bäßler, Svenja; Sergelius, Philip; Hühne, Ruben; Rellinghaus, Bernd; Shekhar, Chandra; Süß, Vicky; Schmidt, Marcus; Felser, Claudia; Yan, Binghai; Nielsch, Kornelius

    2017-01-01

    NbP is a recently realized Weyl semimetal (WSM), hosting Weyl points through which conduction and valence bands cross linearly in the bulk and exotic Fermi arcs appear. The most intriguing transport phenomenon of a WSM is the chiral anomaly-induced negative magnetoresistance (NMR) in parallel electric and magnetic fields. In intrinsic NbP the Weyl points lie far from the Fermi energy, making chiral magneto-transport elusive. Here, we use Ga-doping to relocate the Fermi energy in NbP sufficiently close to the W2 Weyl points, for which the different Fermi surfaces are verified by resultant quantum oscillations. Consequently, we observe a NMR for parallel electric and magnetic fields, which is considered as a signature of the chiral anomaly in condensed-matter physics. The NMR survives up to room temperature, making NbP a versatile material platform for the development of Weyltronic applications. PMID:28262790

  16. Studies of Colossal Magnetoresistive Oxides with Radioactive Isotopes

    CERN Multimedia

    2002-01-01

    We propose to study Colossal Magnetoresistive (CMR) oxides with several nuclear techniques, which use radioactive elements at ISOLDE. Our aim is to provide local and element selective information on some of the doping mechanisms that rule electronic interactions and magneto- resistance, in a complementary way to the use of conventional characterisation techniques. Three main topics are proposed: \\\\ \\\\ a) Studies of local [charge and] structural modifications in antiferromagnetic LaMnO$_{3+\\delta}$ and La$_{1-x}$R$_{x}$MnO$_{3}$ with R=Ca and Cd, doped ferromagnetic systems with competing interactions: - research on the lattice site and electronic characterisation of the doping element. \\\\ \\\\ b) Studies of self doped La$_{x}$R$_{1-x}$MnO$_{3+\\delta}$ systems, with oxygen and cation non- stoichiometry: - learning the role of defects in the optimisation of magnetoresestive properties. \\\\ \\\\ c) Probing the disorder and quenched random field effects in the vicinity of the charge or orbital Ordered/Ferromagnetic p...

  17. Space magnetometer based on an anisotropic magnetoresistive hybrid sensor.

    Science.gov (United States)

    Brown, P; Whiteside, B J; Beek, T J; Fox, P; Horbury, T S; Oddy, T M; Archer, M O; Eastwood, J P; Sanz-Hernández, D; Sample, J G; Cupido, E; O'Brien, H; Carr, C M

    2014-12-01

    We report on the design and development of a low resource, dual sensor vector magnetometer for space science applications on very small spacecraft. It is based on a hybrid device combining an orthogonal triad of commercial anisotropic magnetoresistive (AMR) sensors with a totem pole H-Bridge drive on a ceramic substrate. The drive enables AMR operation in the more sensitive flipped mode and this is achieved without the need for current spike transmission down a sensor harness. The magnetometer has sensitivity of better than 3 nT in a 0-10 Hz band and a total mass of 104 g. Three instruments have been launched as part of the TRIO-CINEMA space weather mission, inter-calibration against the International Geomagnetic Reference Field model makes it possible to extract physical signals such as field-aligned current deflections of 20-60 nT within an approximately 45,000 nT ambient field.

  18. Longitudinal Magnetoresistance and "Chiral" Coupling in Silver Chalcogenides

    Institute of Scientific and Technical Information of China (English)

    XU Jie; ZHANG Duan-Ming

    2011-01-01

    A complex longitudinal magnetoresistance (MR∥) effect in the non-stoichiometric silver chalcogenides (include the silver selenide and telluride) has been found, however the mechanism for the MR∥ effect is not clear now.In this work, a new random resistor network for MR∥ effect is proposed based on the experimental observation. The network is constructed from six-terminal resistor units and the mobility of carries within the network has a Gaussian distribution. Considering the non-zero transverse-longitudinal coupling in materials, the resistance matrix of the sixterminal resistor unit is modified. It is found that the material has the "chiral" transverse-longitudinal couplings, which is suggested a main reason for the complex MR∥ effect. The model predictions are compared with the experimental results.A three dimension (3D) visualization of current flow within the network demonstrates the "current jets" phenomenon in the thickness of materials clearly.

  19. Single atom anisotropic magnetoresistance on a topological insulator surface

    KAUST Repository

    Narayan, Awadhesh

    2015-03-12

    © 2015 IOP Publishing Ltd and Deutsche Physikalische Gesellschaft. We demonstrate single atom anisotropic magnetoresistance on the surface of a topological insulator, arising from the interplay between the helical spin-momentum-locked surface electronic structure and the hybridization of the magnetic adatom states. Our first-principles quantum transport calculations based on density functional theory for Mn on Bi2Se3 elucidate the underlying mechanism. We complement our findings with a two dimensional model valid for both single adatoms and magnetic clusters, which leads to a proposed device setup for experimental realization. Our results provide an explanation for the conflicting scattering experiments on magnetic adatoms on topological insulator surfaces, and reveal the real space spin texture around the magnetic impurity.

  20. Colossal magnetoresistivity in manganese-based perovskites (invited) (abstract)

    Science.gov (United States)

    Ramesh, R.; Venkatesan, T.; Ogale, S. B.; Greene, R. L.; Bhagat, S. M.

    1996-04-01

    Magnetoresistivity values of the order of 106% (and in some cases even higher) have been obtained in epitaxial AxB1-xMnO3-y (A=La,Nd; B=Ca,Sr,Ba) thin films grown by pulsed laser deposition. Ferromagnetic resonance experiments suggest a granular-type behavior with conducting ferromagnetic regions (Rcondmagnetic perovskites such as La-Sr-Co-O (metallic ferromagnet), rare earth-Fe-O (ferromagnetic insulator). We are also exploring the possibility of using the semiconducting properties of these materials in an all-perovskite field effect transistor device. In this presentation, we will describe our progress to date on these studies to enhance the field and temperature dependence of the MR properties and explore new device architectures that utilize the inherently novel properties of these materials.

  1. Angular Magnetoresistance of Nanowires with Alternating Cobalt and Nickel Segments

    KAUST Repository

    Mohammed, Hanan

    2017-06-22

    Magnetization reversal in segmented Co/Ni nanowires with varying number of segments was studied using angular Magnetoresistance (MR) measurements on isolated nanowires. The MR measurements offer an insight into the pinning of domain walls within the nanowires. Angular MR measurements were performed on nanowires with two and multiple segments by varying the angle between the applied magnetic field and nanowire (−90° ≤θ≤90°). The angular MR measurements reveal that at lower values of θ the switching fields are nearly identical for the multisegmented and two-segmented nanowires, whereas at higher values of θ, a decrease in the switching field is observed in the case of two segmented nanowires. The two segmented nanowires generally exhibit a single domain wall pinning event, whereas an increased number of pinning events are characteristic of the multisegmented nanowires at higher values of θ. In-situ magnetic force microscopy substantiates reversal by domain wall nucleation and propagation in multisegmented nanowires.

  2. Magnetic-proximity-induced magnetoresistance on topological insulators

    Science.gov (United States)

    Chiba, Takahiro; Takahashi, Saburo; Bauer, Gerrit E. W.

    2017-03-01

    We theoretically study the magnetoresistance (MR) of two-dimensional massless Dirac electrons as found on the surface of three-dimensional topological insulators (TIs) that are capped by a ferromagnetic insulator (FI). We calculate charge and spin transport by Kubo and Boltzmann theories, taking into account the ladder-vertex correction and the in-scattering due to normal and magnetic disorder. The induced exchange splitting is found to generate an electric conductivity that depends on the magnetization orientation, but its form is very different from both the anisotropic and the spin Hall MR. The in-plane MR vanishes identically for nonmagnetic disorder, while out-of-plane magnetizations cause a large MR ratio. On the other hand, we do find an in-plane MR and planar Hall effect in the presence of magnetic disorder aligned with the FI magnetization. Our results may help us understand recent transport measurements on TI |FI systems.

  3. Tunneling magnetoresistance in ferromagnetic planar hetero-nanojunctions

    KAUST Repository

    Useinov, Arthur

    2010-05-03

    We present a theoretical study of the tunneling magnetoresistance (TMR) in nanojunctions between non-identical ferromagnetic metals in the framework of the quasiclassical approach. The lateral size of a dielectric oxide layer, which is considered as a tunneling barrier between the metallic electrodes, is comparable with the mean-free path of electrons. The dependence of the TMR on the bias voltage, physical parameters of the dielectric barrier, and spin polarization of the electrodes is studied. It is demonstrated that a simple enough theory can give high TMR magnitudes of several hundred percent at bias voltages below 0.5 V. A qualitative comparison with the available experimental data is given. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  4. Neurogenic dural protein extravasation induced by meta-chlorophenylpiperazine (mCPP) involves nitric oxide and 5-HT2B receptor activation.

    Science.gov (United States)

    Johnson, K W; Nelson, D L; Dieckman, D K; Wainscott, D B; Lucaites, V L; Audia, J E; Owton, W M; Phebus, L A

    2003-03-01

    The compound m-chlorophenylpiperazine (mCPP), which is known to trigger migraine-like head pain in some subjects, was evaluated for its ability to induce dural plasma protein extravasation (PPE) in guinea pigs. Intravenous mCPP dose-dependently increased PPE. This effect was inhibited by non-selective 5-HT2 receptor antagonists (methysergide, LY53857, LY215840), by a peripherally restricted 5-HT2 receptor antagonist (xylamidine) and by a 5-HT2B selective receptor antagonist (LY202146). These data suggests that peripheral 5-HT2B receptors mediate mCPP-induced PPE. The nitric oxide synthase inhibitor L-NAME and 5-HT1 agonist sumatriptan also blocked mCPP-induced PPE, suggesting a role for nitric oxide (NO) and the trigeminal system, respectively. NO release has been linked to activation of the 5-HT2B receptor on the vascular endothelium. However, LY202146 did not block PPE induced by electrical stimulation of the trigeminal ganglion. These data are consistent with activation of peripheral 5-HT2B receptors initiating PPE and the theory that selective 5-HT2B antagonists might be effective prophylactic therapies for migraine.

  5. Monte Carlo simulation of multilayer magnetic structures and calculation of the magnetoresistance coefficient

    Science.gov (United States)

    Prudnikov, V. V.; Prudnikov, P. V.; Romanovskii, D. E.

    2015-11-01

    The Monte Carlo study of three-layer and spin-valve magnetic structures with giant magnetoresistance effects has been performed with the application of the Heisenberg anisotropic model to the description of the magnetic properties of thin ferromagnetic films. The dependences of the magnetic characteristics on the temperature and external magnetic field have been obtained for the ferromagnetic and antiferromagnetic configurations of these structures. A Monte Carlo method for determining the magnetoresistance coefficient has been developed. The magnetoresistance coefficient has been calculated for three-layer and spin-valve magnetic structures at various thicknesses of ferromagnetic films. It has been shown that the calculated temperature dependence of the magnetoresistance coefficient is in good agreement with experimental data obtained for the Fe(001)/Cr(001) multilayer structure and the CFAS/Ag/CFAS/IrMn spin valve based on the Co2FeAl0.5Si0.5 (CFAS) Heusler alloy.

  6. Quantitative study of the spin Hall magnetoresistance in ferromagnetic insulator/normal metal hybrids

    NARCIS (Netherlands)

    Althammer, M.; Meyer, S.; Nakayama, H.; Schreier, M.; Altmannshofer, S.; Weiler, M.; Huebl, H.; Gesprägs, S.; Opel, M.; Gross, R.; Meier, D.; Klewe, C.; Kuschel, T.; Schmalhorst, J.M.; Reiss, G.; Shen, L.; Gupta, A.; Chen, Y.T.; Bauer, G.E.W.; Saitoh, E.; Goennenwein, S.T.B.

    2013-01-01

    We experimentally investigate and quantitatively analyze the spin Hall magnetoresistance effect in ferromagnetic insulator/platinum and ferromagnetic insulator/nonferromagnetic metal/platinum hybrid structures. For the ferromagnetic insulator, we use either yttrium iron garnet, nickel ferrite, or ma

  7. Magnetoresistance effect in (La, Sr)MnO{sub 3} bicrystalline films

    Energy Technology Data Exchange (ETDEWEB)

    Alejandro, G; Pastoriza, H; Granada, M; Rojas Sanchez, J C; Sirena, M; Alascio, B [Centro Atomico Bariloche (CNEA), Av. Bustillo 9500, 8400 San Carlos de Bariloche, Pcia. de Rio Negro (Argentina); Steren, L B; Vega, D, E-mail: galejand@cab.cnea.gov.a [Centro Atomico Constituyentes (CNEA), 1650 San MartIn, Pcia. de Buenos Aires (Argentina)

    2010-09-01

    The angular dependence of the magnetoresistance effect has been measured on bicrystalline La{sub 0.75}Sr{sub 0.25}MnO{sub 3} films. The measurements have been performed on an electronically lithographed Wheatstone bridge. The study of the angular dependence of both the magnetoresistance and the resistance of single-crystalline and grain-boundary regions of the samples allowed us to isolate two contributions of low-field magnetoresistance in manganites. One of them is associated with the spin-orbit effect, i.e. the anisotropic magnetoresistance of ferromagnetic compounds, and the other one is related to spin-disorder regions at the grain boundary. Complementary x-ray diffraction, ferromagnetic resonance and low temperature magnetization experiments contribute to the characterization of the magnetic anisotropy of the samples and the general comprehension of the problem.

  8. Magnetoresistance effect in (La, Sr)MnO3 bicrystalline films.

    Science.gov (United States)

    Alejandro, G; Steren, L B; Pastoriza, H; Vega, D; Granada, M; Sánchez, J C Rojas; Sirena, M; Alascio, B

    2010-09-01

    The angular dependence of the magnetoresistance effect has been measured on bicrystalline La(0.75)Sr(0.25)MnO(3) films. The measurements have been performed on an electronically lithographed Wheatstone bridge. The study of the angular dependence of both the magnetoresistance and the resistance of single-crystalline and grain-boundary regions of the samples allowed us to isolate two contributions of low-field magnetoresistance in manganites. One of them is associated with the spin-orbit effect, i.e. the anisotropic magnetoresistance of ferromagnetic compounds, and the other one is related to spin-disorder regions at the grain boundary. Complementary x-ray diffraction, ferromagnetic resonance and low temperature magnetization experiments contribute to the characterization of the magnetic anisotropy of the samples and the general comprehension of the problem.

  9. Spin-valley filter and tunnel magnetoresistance in asymmetrical silicene magnetic tunnel junctions

    Science.gov (United States)

    Wang, Dali; Huang, Zeyuan; Zhang, Yongyou; Jin, Guojun

    2016-05-01

    The spin and valley transports and tunnel magnetoresistance are studied in a silicene-based asymmetrical magnetic tunnel junction consisting of a ferromagnetic tunnel barrier, sandwiched between a ferromagnetic electrode and a normal electrode. For such an asymmetrical silicene junction, a general formulism is established. The numerical results show that the spin-valley resolved conductances strongly depend on the magnetization orientation of the ferromagnetic tunnel barrier, and the fully spin-valley polarized current can be realized by tuning a perpendicularly applied electric field. We also find that the tunnel magnetoresistance in this case can be effectively modified by the external electric field when the conductance is fully spin-valley polarized. In particular, the exchange field in the ferromagnetic electrode can further substantially enhance the tunnel magnetoresistance of the system. Our work provides a practical method for electric and magnetic manipulation of valley/spin polarization and tunnel magnetoresistance.

  10. Theory of unidirectional spin Hall magnetoresistance in heavy-metal/ferromagnetic-metal bilayers

    Science.gov (United States)

    Zhang, Steven S.-L.; Vignale, Giovanni

    2016-10-01

    Recent experiments have revealed nonlinear features of the magnetoresistance in metallic bilayers consisting of a heavy metal (HM) and a ferromagnetic metal (FM). A small change in the longitudinal resistance of the bilayer has been observed when reversing the direction of either the applied in-plane current or the magnetization. We attribute such nonlinear transport behavior to the spin-polarization dependence of the electron mobility in the FM layer acting in concert with the spin accumulation induced in that layer by the spin Hall current originating in the bulk of the HM layer. An explicit expression for the nonlinear magnetoresistance is derived based on a simple drift-diffusion model, which shows that the nonlinear magnetoresistance appears at the first order of the spin Hall angle, and changes sign when the current is reversed, in agreement with the experimental observations. We also discuss possible ways to control sign of the nonlinear magnetoresistance and to enhance the magnitude of the effect.

  11. Hybrid Molecular and Spin Dynamics Simulations for Ensembles of Magnetic Nanoparticles for Magnetoresistive Systems.

    Science.gov (United States)

    Teich, Lisa; Schröder, Christian

    2015-11-13

    The development of magnetoresistive sensors based on magnetic nanoparticles which are immersed in conductive gel matrices requires detailed information about the corresponding magnetoresistive properties in order to obtain optimal sensor sensitivities. Here, crucial parameters are the particle concentration, the viscosity of the gel matrix and the particle structure. Experimentally, it is not possible to obtain detailed information about the magnetic microstructure, i.e., orientations of the magnetic moments of the particles that define the magnetoresistive properties, however, by using numerical simulations one can study the magnetic microstructure theoretically, although this requires performing classical spin dynamics and molecular dynamics simulations simultaneously. Here, we present such an approach which allows us to calculate the orientation and the trajectory of every single magnetic nanoparticle. This enables us to study not only the static magnetic microstructure, but also the dynamics of the structuring process in the gel matrix itself. With our hybrid approach, arbitrary sensor configurations can be investigated and their magnetoresistive properties can be optimized.

  12. Modeling of Nanoparticular Magnetoresistive Systems and the Impact on Molecular Recognition

    Directory of Open Access Journals (Sweden)

    Lisa Teich

    2015-04-01

    Full Text Available The formation of magnetic bead or nanoparticle superstructures due to magnetic dipole dipole interactions can be used as configurable matter in order to realize low-cost magnetoresistive sensors with very high GMR-effect amplitudes. Experimentally, this can be realized by immersing magnetic beads or nanoparticles in conductive liquid gels and rearranging them by applying suitable external magnetic fields. After gelatinization of the gel matrix the bead or nanoparticle positions are fixed and the resulting system can be used as a magnetoresistive sensor. In order to optimize such sensor structures we have developed a simulation tool chain that allows us not only to study the structuring process in the liquid state but also to rigorously calculate the magnetoresistive characteristic curves for arbitrary nanoparticle arrangements. As an application, we discuss the role of magnetoresistive sensors in finding answers to molecular recognition.

  13. Magnetoresistance in Parent Pnictide AFe_2As_2(A=Sr, Ba)

    Institute of Scientific and Technical Information of China (English)

    ZHENG Ping; CHEN Gen-Fu; LI Zheng; HU Wan-Zheng; DONG Jing; LI Gang; WANG Nan-Lin; LUO Jian-Lin

    2009-01-01

    Magnetoresistances of SrFe_2 As_2 and BaFe_2 As_2 in the magnetic ordered state are studied.Positive magnetoresis-tance is observed in the magnetic fields H applied in the azimuthes foθ = 0°and 30°with respect to the c-axis.The magnetoresistance can reach 20% for SrFe_2 As_2 and 12% for BaFe_2As_2 at H = 9 T with θ= 0°(H||c).Above the magnetic transition temperature, the magnetoresistance becomes negligible.The data in the magnetic ordered state could be described by a modified two-band galvanomagnetic model including the enhancement effect of the applied magnetic field on the spin-density-wave gap.The field enhanced spin-density-wave gaps for different types of carriers are different.Temperature dependencies of the fitting parameters are discussed.

  14. The tunneling magnetoresistance current dependence on cross sectional area, angle and temperature

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Z. H., E-mail: zhaohui@physics.umanitoba.ca; Bai, Lihui; Hu, C.-M. [Department of Physics and Astronomy, University of Manitoba, Winnipeg, R3T 2N2 Canada (Canada); Hemour, S.; Wu, K. [École Polytechnique de Montréal, Montréal, H3T 1J4 Canada (Canada); Fan, X. L.; Xue, D. S. [The Key Lab for Magnetism and Magnetic Materials of Ministry of Education, Lanzhou University, Lanzhou 730000 (China); Houssameddine, D. [Everspin Technologies, 1347 N. Alma School Road, Chandler, Arizona 85224 (United States)

    2015-03-15

    The magnetoresistance of a MgO-based magnetic tunnel junction (MTJ) was studied experimentally. The magnetoresistance as a function of current was measured systematically on MTJs for various MgO cross sectional areas and at various temperatures from 7.5 to 290.1 K. The resistance current dependence of the MTJ was also measured for different angles between the two ferromagnetic layers. By considering particle and angular momentum conservation of transport electrons, the current dependence of magnetoresistance can be explained by the changing of spin polarization in the free magnetic layer of the MTJ. The changing of spin polarization is related to the magnetoresistance, its angular dependence and the threshold current where TMR ratio equals zero. A phenomenological model is used which avoid the complicated barrier details and also describes the data.

  15. The tunneling magnetoresistance current dependence on cross sectional area, angle and temperature

    Directory of Open Access Journals (Sweden)

    Z. H. Zhang

    2015-03-01

    Full Text Available The magnetoresistance of a MgO-based magnetic tunnel junction (MTJ was studied experimentally. The magnetoresistance as a function of current was measured systematically on MTJs for various MgO cross sectional areas and at various temperatures from 7.5 to 290.1 K. The resistance current dependence of the MTJ was also measured for different angles between the two ferromagnetic layers. By considering particle and angular momentum conservation of transport electrons, the current dependence of magnetoresistance can be explained by the changing of spin polarization in the free magnetic layer of the MTJ. The changing of spin polarization is related to the magnetoresistance, its angular dependence and the threshold current where TMR ratio equals zero. A phenomenological model is used which avoid the complicated barrier details and also describes the data.

  16. Moessbauer investigation of Au/Fe alloys with giant magnetoresistence properties

    Energy Technology Data Exchange (ETDEWEB)

    Albanese, G.; Deriu, A. E-mail: antonio.deriu@fis.unipr.it; Moya, J.; Angeli, E.; Bisero, D.; Da Re, A.; Ronconi, F.; Spizzo, F.; Vavassori, P.; Baricco, M.; Bosco, E

    2004-05-01

    Rapidly quenched ribbon samples and sputtered granular films of AuFe alloys with giant magnetoresistance behaviour were investigated by Moessbauer spectroscopy. The structural and magnetic characteristics of the two kinds of samples are discussed and compared.

  17. Electric field modulation of tunneling anisotropic magnetoresistance in tunnel junctions with antiferromagnetic electrodes

    Science.gov (United States)

    Goto, Minori; Nawaoka, Kohei; Miwa, Shinji; Hatanaka, Shohei; Mizuochi, Norikazu; Suzuki, Yoshishige

    2016-08-01

    We present electric field modulation of tunneling anisotropic magnetoresistance (TAMR) in MnIr|MgO|Ta tunnel junctions. TAMR enables direct observation of the antiferromagnetic spin direction at the MnIr|MgO interface. We found that the shape of magnetoresistance (MR) curve can be modulated by an electric field, which can be explained by electric field modulation of the interfacial magnetic anisotropy at MnIr|MgO.

  18. Quasi-two-dimensional Dirac fermions and quantum magnetoresistance in LaAgBi$_2$

    OpenAIRE

    Wang, Kefeng; Graf, D.; Petrovic, C.

    2016-01-01

    We report quasi-two-dimensional Dirac fermions and quantum magnetoresistance in LaAgBi$_2$. The band structure shows several narrow bands with nearly linear energy dispersion and Dirac-cone-like points at the Fermi level. The quantum oscillation experiments revealed one quasi-two-dimensional Fermi pocket and another complex pocket with small cyclotron resonant mass. The in-plane transverse magnetoresistance exhibits a crossover at a critical field $B^*$ from semiclassical weak-field $B^2$ dep...

  19. Giant Positive Magnetoresistance in Magnetic Multilayer Film Prepared by Ion-Beam Sputtering

    Institute of Scientific and Technical Information of China (English)

    张栋杰; 都有为

    2003-01-01

    The magnetic multilayers Ni78Co22∥Cu∥Ni78Co22/Ni78Co22O∥Ta were fabricated by ion-beam sputtering through applied magnetic field and treatment under high vacuum. Resistance against applied magnetic field was measured by the standard four-point probe method at room temperature. The giant positive magnetoresistance has been observed. A maximum positive magnetoresistance at room temperature was obtained to be 280%.

  20. Preliminary experiment on the negative magneto-resistance effect in a weakly ionized discharge plasma

    Energy Technology Data Exchange (ETDEWEB)

    Nagata, M.

    2002-04-01

    Compared with the interest in the magneto-resistance effect in solid conductors, the effect in a gas plasma has hardly been addressed. In this work, a theoretical result that a magneto-resistance in an infinite plasma decreases is examined experimentally in an actual discharge plasma. Furthermore, a modified expression for the ambipolar diffusion coefficient in the case where electrons are scattered by heavy neutral atoms is presented. (author)

  1. Insulator/metal phase transition and colossal magnetoresistance in holographic model

    CERN Document Server

    Cai, Rong-Gen

    2015-01-01

    We construct a gravity dual for insulator/metal phase transition and colossal magnetoresistance (CMR) effect found in some manganese oxides materials. The computations shows a remarkable magnetic-field-sensitive DC resistivity peak appearing at the Curie temperature, where an insulator/metal phase transition happens and the magnetoresistance is scaled with the square of field-induced magnetization. We find that metallic and insulating phases coexist below the Curie point and the relation with the electronic phase separation is discussed.

  2. Mechanism of Inactivation of y-aminobutyric Acid Aminotransferase by (1S,3S)-3-amino4-difluoromethylenyl-1-cyclopentanoic Acid (CPP-115).

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Hyunbeom; Doud, Emma; Wu, Rui; Sanishvili, Ruslan; Juncosa, Jose I.; Liu, Dali; Kelleher, Neil L.; Silverman, Richard B

    2015-02-25

    gamma-Aminobutyric acid aminotransferase (GABA-AT) is a pyridoxal 5'-phosphate (PLP)-dependent enzyme that degrades GABA, the principal inhibitory neurotransmitter in mammalian cells. When the concentration of GABA falls below a threshold level, convulsions can occur. Inhibition of GABA-AT raises GABA levels in the brain, which can terminate seizures as well as have potential therapeutic applications in treating other neurological disorders, including drug addiction. Among the analogues that we previously developed, (1S,3S)-3-amino-4-difluoromethylene-1-cyclopentanoic acid (CPP-115) showed 187 times greater potency than that of vigabatrin, a known inactivator of GABA-AT and approved drug (Sabril) for the treatment of infantile spasms and refractory adult epilepsy. Recently, CPP-115 was shown to have no adverse effects in a Phase I clinical trial. Here we report a novel inactivation mechanism for CPP-115, a mechanism-based inactivator that undergoes GABA-AT-catalyzed hydrolysis of the difluoromethylene group to a carboxylic acid with concomitant loss of two fluoride ions and coenzyme conversion to pyridoxamine 5'-phosphate (PMP). The partition ratio for CPP-115 with GABA-AT is about 2000, releasing cyclopentanone-2,4-dicarboxylate (22) and two other precursors of this compound (20 and 21). Time-dependent inactivation occurs by a conformational change induced by the formation of the aldimine of 4-aminocyclopentane-1,3-dicarboxylic acid and PMP (20), which disrupts an electrostatic interaction between Glu270 and Arg445 to form an electrostatic interaction between Arg445 and the newly formed carboxylate produced by hydrolysis of the difluoromethylene group in CPP-115, resulting in a noncovalent, tightly bound complex. This represents a novel mechanism for inactivation of GABA-AT and a new approach for the design of mechanism-based inactivators in general.

  3. Laparoscope Diagnosis and Treatment to Chronic Pelvic Cavity Pain (CPP)%慢性盆腔痛腹腔镜诊治探讨

    Institute of Scientific and Technical Information of China (English)

    王芳

    2012-01-01

    [Objective] To explore the cure effect of laparoscope on CPP. [Method] Trace back and analyse the pathological change, treatment and clinical effect of 80 cases of CPP treated with laparoscope. [Result] 85.00% had definite pathological changes; endometriosis (37.5%) .chronic pelvic inflammation(27.5%) .pelvic adhesion(12.5%) were the main pathological changes of CPP, occupying 77.5%(62/80)of total cases. [Conclusion] Laparoscope is a quick, effective and optimized method for defining the causa morbi of chronic pelvic cavity pain. and can improve diagnosis rate and effective rate of CPP.%[目的]探讨腹腔镜在慢性盆腔痛(CPP)中的诊断治疗作用.[方法]回顾性分析使用腹腔镜进行诊治的80例慢性盆腔痛患者的病理改变、治疗方法及临床疗效.[结果]85.00%( 68/80)的CPP患者在腹腔镜使用下明确了其病理改变,子宫内膜异位症(37.5%)、慢性盆腔炎(27.5%)、盆腔粘连(125%)是 CPP的主要病理改变,占总病例的77.50%( 62/80).[结论]腹腔镜是明确慢性盆腔痛病理病因的一种快速、有效、优选的方法,能提高慢性盆腔痛诊治的确诊率和有效率.

  4. Study on Performance of CPP Film Modified by POE Resin.%POE树脂改性CPP薄膜的性能研究

    Institute of Scientific and Technical Information of China (English)

    张和平

    2012-01-01

    POE resin was added into three layer coextrusion CPP film to modify its performace. The performance of the CPP film after addition of POE resin into the corona layer, core layer, and heat sealing layer were studied. The results showed that 15% POE resin addition into the corona layer can double the aluminum adhesive strength of CPP film after vacuum metallization; 25% POE resin addition into the core layer can reduce CPP film modulus by 36.3% ; 40% POE resin addition into the heat sealing layer can reduce CPP film's heat sealing temperature by 10 ℃.%在3层共挤流延聚丙烯薄膜(CPP薄膜)的原料树脂中,加入POE树脂,进行了CPP薄膜的改性,研究了在CPP薄膜的电晕层、芯层、热封层分别加入POE树脂后,薄膜的相应性能。结果表明:在电晕层中加入质量分数为15%的POE树脂,可以将CPP薄膜真空镀铝后的铝层附着牢度提高1倍;在芯层中加入质量分数为25%的POE树脂,可以使CPP薄膜的模量降低36.3%;在热封层中加入质量分数为40%的POE树脂,可以将CPP薄膜的热封温度降低10℃。

  5. First-principles spin-transfer torque in CuMnAs |GaP |CuMnAs junctions

    Science.gov (United States)

    Stamenova, Maria; Mohebbi, Razie; Seyed-Yazdi, Jamileh; Rungger, Ivan; Sanvito, Stefano

    2017-02-01

    We demonstrate that an all-antiferromagnetic tunnel junction with current perpendicular to the plane geometry can be used as an efficient spintronic device with potential high-frequency operation. By using state-of-the-art density functional theory combined with quantum transport, we show that the Néel vector of the electrodes can be manipulated by spin-transfer torque. This is staggered over the two different magnetic sublattices and can generate dynamics and switching. At the same time the different magnetization states of the junction can be read by standard tunneling magnetoresistance. Calculations are performed for CuMnAs |GaP |CuMnAs junctions with different surface terminations between the antiferromagnetic CuMnAs electrodes and the insulating GaP spacer. We find that the torque remains staggered regardless of the termination, while the magnetoresistance depends on the microscopic details of the interface.

  6. Effectiveness of varnish with CPP-ACP in prevention of caries lesions around orthodontic brackets: an OCT evaluation.

    Science.gov (United States)

    Pithon, Matheus M; Dos Santos, Mariana J; Andrade, Camilla S S; Leão Filho, Jorge César B; Braz, Ana Karla S; de Araujo, Renato E; Tanaka, Orlando M; Fidalgo, Tatiana K S; Dos Santos, Adrielle M; Maia, Lucianne C

    2015-04-01

    To evaluate the in vitro efficiency of applying varnish containing casein phosphopeptide (CPP) and amorphous calcium phosphate (ACP) in prevention of caries lesions around orthodontic brackets. For this purpose, brackets were bonded to the vestibular surface of bovine incisors, and eight groups were formed (n = 15) according to exposure of oral hygiene substances and enamel varnish: 1 (control) brushing only performed, 2 (control) brushing + use of mouth wash with fluoride, 3 Duraphat varnish application only (Colgate-Palmolive Ind. E Com. Ltda, São Paulo, SP, Brazil), 4 Duraphat + brushing, 5 Duraphat + brushing + mouth wash, 6 MI Varnish application (GC America, USA), 7 MI + brushing, and 8 MI + brushing + mouth wash. The experimental groups alternated between pH cycling and the procedures described and were kept in an oven at temperature of 37°C. Both brushing and immersion in solutions was performed in a time interval of 1 minute, followed by washing in deionized water three times a day for 28 days of experimentation. Afterwards, evaluation by optical coherence tomography (OCT) of the special type (Ganymede OCT/Thorlabs, Newton, USA) was performed. In each group, a scanning exam of the white spot lesion area (around the region where brackets were bonded) and depth measurement of caries lesions were performed. Groups 1 and 3 were shown to differ statistically from groups 5, 6, 7, and 8 (p = 0.000). MI Varnish was shown to be more effective in diminishing caries lesion depth, compared with Duraphat, irrespective of being associated with brushing and mouth wash, or not. The major limitation of this study is that it is a study in which demineralization was obtained with the use of chemical products, and did not occur due to the presence of Streptococcus mutans and its acid byproducts. Application CPP-ACP-containing varnish irrespective of being associated with brushing and mouthwash, or not, reduced depth of caries lesions around orthodontic brackets. © The

  7. Effect of different application frequencies of CPP-ACP and fluoride dentifrice on demineralized enamel: a laboratory study.

    Science.gov (United States)

    De Souza, Cynthia Carvalho; Cury, Juliana Leoni Mussa; Coutinho, Theresa Christina Lopes; Da Silva, Eduardo Moreira; Tostes, Monica Almeida

    2014-08-01

    To evaluate the effect of different application frequencies of dentifrices containing CPP-ACP and fluoride on enamel demineralization inhibition using a pH cycling model. A total of 120 enamel blocks obtained from permanent human third molars were divided into eight groups according to the treatment and number of times that the dentifrice slurry was applied (three or five times): Control--Dentifrice without Fluoride (CO3 and CO5); Fluoride Dentifrice (FD3 and FD5--commercial dentifrice 1100 ppm as NaF); MI Paste (MP3 and MP5--Recaldent) and MI Paste Plus (MPP3 and MPP5--Recaldent 900 ppm as NaF). The specimens were alternately soaked in a demineralizing solution for 6 hours and in a remineralizing solution for 18 hours for 5 days. The treatments were applied three or five times for 60 seconds after the de-remineralization period. The dentifrice slurries were prepared with deionized water, in a 1:3 proportion (wt%). Demineralized enamel changes were analyzed by surface microhardness (SMH) and 3D-profilometry. Data were analyzed by two-way and one-way ANOVA and Tukey's HSD post hoc test (α = 0.05). The percentage change of SMH (%SMH) was similar for all treatment groups except between MP5 dentifrice.

  8. Viable chemical approach for patterning nanoscale magnetoresistive random access memory

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Taeseung; Kim, Younghee; Chen, Jack Kun-Chieh; Chang, Jane P., E-mail: jpchang@seas.ucla.edu [Department of Chemical and Biomolecular Engineering, University of California Los Angeles, Los Angeles, California 90095 (United States)

    2015-03-15

    A reactive ion etching process with alternating Cl{sub 2} and H{sub 2} exposures has been shown to chemically etch CoFe film that is an integral component in magnetoresistive random access memory (MRAM). Starting with systematic thermodynamic calculations assessing various chemistries and reaction pathways leading to the highest possible vapor pressure of the etch products reactions, the potential chemical combinations were verified by etch rate investigation and surface chemistry analysis in plasma treated CoFe films. An ∼20% enhancement in etch rate was observed with the alternating use of Cl{sub 2} and H{sub 2} plasmas, in comparison with the use of only Cl{sub 2} plasma. This chemical combination was effective in removing metal chloride layers, thus maintaining the desired magnetic properties of the CoFe films. Scanning electron microscopy equipped with energy-dispersive x-ray spectroscopy showed visually and spectroscopically that the metal chloride layers generated by Cl{sub 2} plasma were eliminated with H{sub 2} plasma to yield a clean etch profile. This work suggests that the selected chemistries can be used to etch magnetic metal alloys with a smooth etch profile and this general strategy can be applied to design chemically based etch processes to enable the fabrication of highly integrated nanoscale MRAM devices.

  9. Magnetoresistance of rolled-up Fe3Si nanomembranes

    Science.gov (United States)

    Schumann, J.; Lisunov, K. G.; Escoffier, W.; Raquet, B.; Broto, J. M.; Arushanov, E.; Mönch, I.; Makarov, D.; Deneke, C.; Schmidt, O. G.

    2012-06-01

    Magnetotransport of individual rolled-up Fe3Si nanomembranes is investigated in a broad temperature range from 4.2 K up to 300 K in pulsed magnetic fields up to 55 T. The observed magnetoresistance (MR) has the following pronounced features: (i) MR is negative in the investigated intervals of temperature and magnetic field; (ii) its magnitude increases linearly with the magnetic field in a low-field region and reveals a gradual trend to saturation when the magnetic field increases; (iii) the MR effect becomes more pronounced with increasing temperature. These dependences of MR on the magnetic field and temperature are in line with predictions of the spin-disorder model of the spin-flip s-d interaction assisted with creation or annihilation of magnons, which is expected above a certain critical temperature. Comparison of the MR features in rolled-up and planar samples reveals a substantial increase of the critical temperature in the rolled-up tube, which is attributed to a new geometry and internal strain arising in the rolled-up nanomembranes, influencing the electronic and magnetic properties of the material.

  10. Nanometer-scale phase separation in colossal magnetoresistive manganite

    Energy Technology Data Exchange (ETDEWEB)

    Roessler, Sahana; Ernst, Stefan; Wirth, Steffen; Steglich, Frank [Max Planck Institute for Chemical Physics of Solids, Noethnizer Strasse 40, 01187, Dresden (Germany); Padmanabhan, B.; Elizabeth, Suja; Bhat, H.L. [Department of Physics, Indian Institute of Science, Bangalore 560012 (India)

    2008-07-01

    In strongly correlated electron systems an intrinsic instability of the electronic state and competing long-range interactions may result in the formation of nanometer-sized regions of different phases. We have carried out scanning tunneling microscopy/spectroscopy on single crystals of a colossal magnetoresistive manganite Pr{sub 0.68}Pb{sub 0.32}MnO{sub 3} at different temperatures in order to probe their spatial homogeneity across the metal-insulator transition temperature T{sub M-I}. In this compound, the Curie temperature T{sub C} is lower than T{sub M-I}. Spectroscopic studies revealed inhomogeneous maps of the zero-bias conductance with small patches of metallic clusters on a length scale of 2-3 nm only within a narrow temperature range close to the metal-insulator transition. A detailed analysis of conductance histograms based on these maps gave direct evidence for phase separation into insulating and metallic regions in the paramagnetic metallic state, i.e. for T{sub C} T{sub M-I}.

  11. Colossal magnetoresistance and phase separation in manganite thin films

    Science.gov (United States)

    Srivastava, M. K.; Agarwal, V.; Kaur, A.; Singh, H. K.

    2017-05-01

    In the present work, polycrystalline Sm0.55Sr0.45MnO3 thin films were prepared on LSAT (001) single crystal substrates by ultrasonic nebulized spray pyrolysis technique. The X-ray diffraction θ-2θ scan reveals that these films (i) have very good crystallinity, (ii) are oriented along out-of-plane c-direction, and (iii) are under small tensile strain. The impact of oxygen vacancy results into (i) higher value of paramagnetic insulator (PMI) to ferromagnetic metal (FMM) transition temperature, i.e., TC/TIM, (ii) sharper PMI-FMM transition, (iii) higher value of magnetization and magnetic saturation moment, and (iv) higher value of magnetoresistance (˜99%). We suggest here that oxygen vacancy favors FMM phase while oxygen vacancy annihilation leads to antiferromagnetic-charge ordered insulator (AFM-COI) phase. The observed results have been explained in context of phase separation (PS) caused by different fractions of the competing FMM and AFM-COI phases.

  12. Extraordinary magnetoresistance in semiconductor/metal hybrids: A review

    KAUST Repository

    Sun, J.

    2013-02-13

    The Extraordinary Magnetoresistance (EMR) effect is a change in the resistance of a device upon the application of a magnetic field in hybrid structures, consisting of a semiconductor and a metal. The underlying principle of this phenomenon is a change of the current path in the hybrid structure upon application of a magnetic field, due to the Lorentz force. Specifically, the ratio of current, flowing through the highly conducting metal and the poorly conducting semiconductor, changes. The main factors for the device\\'s performance are: the device geometry, the conductivity of the metal and semiconductor, and the mobility of carriers in the semiconductor. Since the discovery of the EMR effect, much effort has been devoted to utilize its promising potential. In this review, a comprehensive overview of the research on the EMR effect and EMR devices is provided. Different geometries of EMR devices are compared with respect to MR ratio and output sensitivity, and the criteria of material selection for high-performance devices are discussed. 2013 by the authors.

  13. Shield-related signal instability in magnetoresistive heads

    Science.gov (United States)

    Nakamoto, K.; Narumi, S.; Kawabe, T.; Kobayashi, T.; Fukui, H.

    1999-04-01

    Magnetoresistive (MR) heads with various upper shield materials were fabricated and their read-write performance was tested to clarify the shield-related effect on the signal instability in MR heads. Comparison of a head with an upper shield layer of higher magnetostriction and one with lower magnetostriction showed that the latter had better stability in the output signal of a repeated read-write test. The output amplitude of a head with an upper shield layer of Co52Ni27Fe21 film, which had a high magnetostriction of about +3×10-6, was varied by applying a low external longitudinal field, which affected just the shield layers. This change in the output corresponded well to the output variation in the repeated read-write test. The spin scanning electron micrograph image of this head revealed a distinct domain wall in the air bearing surface near the MR sensor. These results indicated that instability of the domain structure in a shield layer was one of the causes of the signal instability in MR heads; an unusual bias field from a domain wall of the shield layer, which could be moved easily by a repeated writing operation, caused a variation in the biased state of the MR layer which resulted in the signal variation, and that low magnetostriction was required for a shield material to achieve a stable head.

  14. Magnetoresistance in CePtSn under high hydrostatic pressures

    Energy Technology Data Exchange (ETDEWEB)

    Misek, M. [Charles University, Faculty of Mathematics and Physics, Department of Condensed Matter Physics, Ke Karlovu 5, 121 16 Prague (Czech Republic)], E-mail: martinmisek@hotmail.com; Prokleska, J.; Javorsky, P.; Sechovsky, V. [Charles University, Faculty of Mathematics and Physics, Department of Condensed Matter Physics, Ke Karlovu 5, 121 16 Prague (Czech Republic)

    2009-07-01

    We report the evolution of magnetic-history dependent antiferromagnetic phases in CePtSn. We concentrate on the magnetoresistance in magnetic fields up to 14 T applied along the crystallographic b-axis, measured on a CePtSn single crystal subjected to hydrostatic pressure (p {<=} 2.2 GPa) generated in a double-layered CuBe/NiCrAl piston cylinder cell. We observe a gradual increase of the critical field B{sub c}{sup LF} of the low field (LF) transition up to {approx}1.2 GPa where only one transition is observed at {approx}11.5 T. For pressures above 1.2 GPa we observe two transitions again and B{sub c}{sup LF} decreases with further increasing pressure to reach B{sub c}{sup LF}{approx}7.5T at 2.5 GPa. The position of the high field (HF) transition remains almost unaffected by applied pressure. A scenario considering the spin-slip AF structure in CePtSn is briefly discussed.

  15. Giant anisotropic magnetoresistance in a quantum anomalous Hall insulator

    Science.gov (United States)

    Kandala, Abhinav; Richardella, Anthony; Kempinger, Susan; Liu, Chao-Xing; Samarth, Nitin

    2015-07-01

    When a three-dimensional ferromagnetic topological insulator thin film is magnetized out-of-plane, conduction ideally occurs through dissipationless, one-dimensional (1D) chiral states that are characterized by a quantized, zero-field Hall conductance. The recent realization of this phenomenon, the quantum anomalous Hall effect, provides a conceptually new platform for studies of 1D transport, distinct from the traditionally studied quantum Hall effects that arise from Landau level formation. An important question arises in this context: how do these 1D edge states evolve as the magnetization is changed from out-of-plane to in-plane? We examine this question by studying the field-tilt-driven crossover from predominantly edge-state transport to diffusive transport in Crx(Bi,Sb)2-xTe3 thin films. This crossover manifests itself in a giant, electrically tunable anisotropic magnetoresistance that we explain by employing a Landauer-Büttiker formalism. Our methodology provides a powerful means of quantifying dissipative effects in temperature and chemical potential regimes far from perfect quantization.

  16. TOPICAL REVIEW: Tunneling magnetoresistance from a symmetry filtering effect

    Directory of Open Access Journals (Sweden)

    William H Butler

    2008-01-01

    Full Text Available This paper provides a brief overview of the young, but rapidly growing field of spintronics. Its primary objective is to explain how as electrons tunnel through simple insulators such as MgO, wavefunctions of certain symmetries are preferentially transmitted. This symmetry filtering property can be converted into a spin-filtering property if the insulator is joined epitaxially to a ferromagnetic electrode with the same two-dimensional symmetry parallel to the interface. A second requirement of the ferromagnetic electrodes is that a wavefunction with the preferred symmetry exists in one of the two spin channels but not in the other. These requirements are satisfied for electrons traveling perpendicular to the interface for Fe–MgO–Fe tunnel barriers. This leads to a large change in the resistance when the magnetic moment of one of the electrodes is rotated relative to those of the other electrode. This large tunneling magnetoresistance effect is being used as the read sensor in hard drives and may form the basis for a new type of magnetic memory.

  17. Magnetoresistive-superconducting mixed sensors for biomagnetic applications

    Energy Technology Data Exchange (ETDEWEB)

    Pannetier-Lecoeur, M. [DSM/IRAMIS/SPEC, CEA Saclay, 91191 Gif sur Yvette Cedex (France); Fermon, C., E-mail: claude.fermon@cea.f [DSM/IRAMIS/SPEC, CEA Saclay, 91191 Gif sur Yvette Cedex (France); Dyvorne, H.; Jacquinot, J.F.; Polovy, H.; Walliang, A.L. [DSM/IRAMIS/SPEC, CEA Saclay, 91191 Gif sur Yvette Cedex (France)

    2010-05-15

    When coupled to a giant magnetoresistive (GMR) sensor, a superconducting loop containing a constriction can be a very sensitive magnetometer. It has thermal noise levels of few fT/sqrt(Hz), comparable to low-T{sub c} SQUID noise, with a flat frequency response. These mixed sensors are good candidates for detection of weak biomagnetic signals, like a cardiac or neuronal signature. Furthermore, being sensitive to the flux, mixed sensors can be used for nuclear magnetic resonance (NMR) detection and Magnetic Resonance Imaging (MRI) especially at low fields. They are very robust and accept strong RF pulses with a very short recovery time compared to tuned RF coils, which allow measurements of broad signals (short relaxation time or multiple resonances). We will first present the last generation sensors having a noise level of 3 fT/sqrt(Hz) and we will show signals measured at low frequency (magnetocardiography-magnetoencephalography range) and at higher frequency (NMR signals). The use of additional flux transformers for improving the signal-to-noise will be discussed. Finally, we will present perspectives for low-field MRI, which can be combined with neural signal detection (MEG), especially for brain anatomy and temporal response on the same experimental setup.

  18. A new theory of doped manganites exhibiting colossal magnetoresistance

    Indian Academy of Sciences (India)

    H R Krishnamurthy

    2005-06-01

    Rare earth manganites doped with alkaline earths, namely Re1-AMnO3, exhibit colossal magnetoresistance, metal insulator transitions, competing magnetic, orbital and charge ordering, and many other interesting but poorly understood phenomena. In this article I outline our recent theory based on the idea that in the presence of strong Jahn–Teller, Coulomb and Hund’s couplings present in these materials, the low-energy electronic states dynamically reorganize themselves into two sets: one set (ℓ) which are polaronic, i.e., localized and accompanied by large local lattice distortion, and another (b) which are non-polaronic and band-like. The coexistence of the radically different ℓ and states, and the sensitive dependence of their relative energies and occupation upon doping , temperature , magnetic field , etc., underlies the unique effects seen in manganites. I present results from strong correlation calculations using dynamical mean-field theory and simulations on a new 2-fluid model which accord with a variety of observations.

  19. Novel Majorana mode and magnetoresistance in ferromagnetic superconducting topological insulator

    Science.gov (United States)

    Goudarzi, H.; Khezerlou, M.; Asgarifar, S.

    2017-03-01

    Among the potential applications of topological insulators, we investigate theoretically the effect of coexistence of proximity-induced ferromagnetism and superconductivity on the surface states of 3-dimensional topological insulator, where the superconducting electron-hole excitations can be significantly affected by the magnetization of ferromagnetic order. We find that, Majorana mode energy, as a verified feature of TI F/S structure, along the interface sensitively depends on the magnitude of magnetization mzfs in FS region, while its slope in perpendicular incidence presents steep and no change. Since the superconducting gap is renormalized by a factor η (mzfs) , hence Andreev reflection is more or less suppressed, and, in particular, resulting subgap tunneling conductance is more sensitive to the magnitude of magnetizations in FS and F regions. Furthermore, an interesting scenario happens at the antiparallel configuration of magnetizations mzf and mzfs resulting in magnetoresistance in N/F/FS junction, which can be controlled and decreased by tuning the magnetization magnitude in FS region.

  20. The fluorescence of 5-cyano-2-(1-pyrrolyl)-pyridine (CPP) in different solvents and in solid argon: An experimental and theoretical study

    Energy Technology Data Exchange (ETDEWEB)

    Abramov, S.; Schweke, D.; Zilberg, S. [Department of Physical Chemistry and the Farkas Center for Light Induced Processes, Hebrew University of Jerusalem, Jerusalem (Israel); Haas, Y. [Department of Physical Chemistry and the Farkas Center for Light Induced Processes, Hebrew University of Jerusalem, Jerusalem (Israel)], E-mail: yehuda@chem.ch.huji.ac.il

    2007-05-21

    The fluorescence spectrum of 5-cyano-2-(1-pyrrolyl)-pyridine (CPP) was measured in several solvents as well as in an argon matrix. Based on comparison with other compounds and on ab initio calculations it is proposed that the fluorescence in the argon matrix and in non-polar solvents is due to two electronic excited states: one is of locally excited nature, the other a charge transfer (CT) state. In polar solvents the spectrum is dominated by the CT emission. The photo-physical behavior of CPP is discussed by comparison with that of other molecules exhibiting dual fluorescence and in view of a recent model developed for the benzene analog.

  1. Giant magnetoresistance, three-dimensional Fermi surface and origin of resistivity plateau in YSb semimetal

    Science.gov (United States)

    Pavlosiuk, Orest; Swatek, Przemysław; Wiśniewski, Piotr

    2016-12-01

    Very strong magnetoresistance and a resistivity plateau impeding low temperature divergence due to insulating bulk are hallmarks of topological insulators and are also present in topological semimetals where the plateau is induced by magnetic field, when time-reversal symmetry (protecting surface states in topological insulators) is broken. Similar features were observed in a simple rock-salt-structure LaSb, leading to a suggestion of the possible non-trivial topology of 2D states in this compound. We show that its sister compound YSb is also characterized by giant magnetoresistance exceeding one thousand percent and low-temperature plateau of resistivity. We thus performed in-depth analysis of YSb Fermi surface by band calculations, magnetoresistance, and Shubnikov-de Haas effect measurements, which reveals only three-dimensional Fermi sheets. Kohler scaling applied to magnetoresistance data accounts very well for its low-temperature upturn behavior. The field-angle-dependent magnetoresistance demonstrates a 3D-scaling yielding effective mass anisotropy perfectly agreeing with electronic structure and quantum oscillations analysis, thus providing further support for 3D-Fermi surface scenario of magnetotransport, without necessity of invoking topologically non-trivial 2D states. We discuss data implying that analogous field-induced properties of LaSb can also be well understood in the framework of 3D multiband model.

  2. Efficacy of a novel at-home bleaching technique with carbamide peroxides modified by CPP-ACP and its effect on the microhardness of bleached enamel.

    Science.gov (United States)

    Borges, B C D; Borges, J S; de Melo, C D; Pinheiro, I V A; Santos, A J S Dos; Braz, R; Montes, M A J R

    2011-01-01

    This study was designed to evaluate in vitro the efficacy of a novel at-home bleaching technique using 10% or 16% carbamide peroxide modified by casein phosphopeptide-amorphous calcium phosphate (CPP-ACP) and its influence on the microhardness of bleached enamel. A total of 40 bovine incisors were divided into four groups (n=10) according to the bleaching agent used: 10% carbamide peroxide only; a blend of 10% carbamide peroxide and a CPP-ACP paste; 16% carbamide peroxide only; and a blend of 16% carbamide peroxide and a CPP-ACP paste. During the 14-day bleaching regimen, the samples were stored in artificial saliva. The Vickers microhardness and color of the teeth were assessed at baseline (T0) and immediately after the bleaching regimen (T14) using a microhardness tester and a spectrophotometer, respectively. The degree of color change was determined by the Commission Internationale de l'Eclariage (CIE) L*a*b* system (ΔE, ΔL*, Δa*, and Δb*) and Vita shade guide parameters. The data were analyzed by analysis of variance and the Tukey test (pmicrohardness values at T14 compared with T0, whereas the samples that were bleached with peroxide only did not show any differences in their microhardness values. All of the bleaching agents were effective at whitening the teeth and did not show a statistically significant difference using the CIEL*a*b* system (ΔE, ΔL*, Δa*, and Δb*) or the Vita shade guide parameters. The use of a CPP-ACP paste with carbamide peroxide bleaching agents increased the bleached enamel's microhardness and did not have an influence on whitening efficacy.

  3. Optimal Parmeters Study on Processing Casein Phosphopeptide%生物活性肽-酪蛋白磷酸肽(CPP)的研制

    Institute of Scientific and Technical Information of China (English)

    蔡为荣; 薛正莲

    2001-01-01

    摸索了2709碱性蛋白酶水解酪蛋白制备CPP的最佳工艺条件:底物浓度10%、用酶量1500μ/g反应温度45℃、pH10.5、反应时间150min。采用选择沉淀法分离CPP,在pH4.5添加1.1%CaCl2(w/v)和50%(v/v)乙醇,室温沉淀4h,得到CPP产品的N/P、得率分别为6.39%和13.94%。%In this study, alcalase was used for producing CPP by hydrolyzing casein. The optimum conditions: casein concentration 10%, enzyme usage 1500u/g substrate, temperature 45℃, pH10. 5 and time 150mins were determined. A selective precipitation procedure was also used to isolate CPP from the hydrolyzate of casein. The N/P ratio and the yield of CPP obtained by adding 1.1% CaCl2 (w / v ) and 50% (v / v ) alcohol to the hyrolyzate at pH4. 5 were 6. 39% and 13.94% respectively.

  4. m-CPP, a 5-HT2C receptor agonist that modifies the perfusion pressure of the hindquarter vascular bed of anesthetized rat.

    Science.gov (United States)

    Calama, E; Morán, A; Ortiz de Urbina, A V; Martín, M L; San Román, L

    2005-02-01

    In the present work we studied the actions of the intra-arterial administration of meta-chlorophenylpiperazine (m-CPP - a 5-HT(2C) receptor agonist) in the hindquarters of the anesthetized rat. The lowest doses used (0.001, 0.01, 0.1, 0.25 and 0.5 microg/kg) induced vasodilatation whereas the highest doses produced vasoconstriction (1, 6.25, 12.5 and 25 microg/kg). Both vasodilatation and vasoconstriction were inhibited by the 5-HT(1,2 )receptor antagonist methiothepin, whereas the 5-HT(2 )receptor antagonist ritanserin blocked only the vasoconstrictor responses. 1-[4-(1-Adamantanecarboxamido)butyl]-4-(2-methoxyphenyl)piperazine (a 5-HT(1A) receptor antagonist) and ICI 118,551 (a beta(2)-receptor antagonist) failed to modify the vasodilator responses of m-CPP. Both BRL 15572 (a 5-HT(1D) receptor antagonist) and GR 55562 (a 5-HT(1B) receptor antagonist) only partially inhibited this action. Our data reveal that m-CPP induces the 5-HT(1 )and/or non-specific vasodilator effect and 5-HT(2) vasoconstrictor effects in the hindquarter vascular bed of the rat.

  5. Comparison of CPP-ACP, Tri-Calcium Phosphate and Hydroxyapatite on Remineralization of Artificial Caries Like Lesions on Primary Enamel -An in vitro Study.

    Science.gov (United States)

    Bajaj, Meghna; Poornima, P; Praveen, S; Nagaveni, N B; Roopa, K B; Neena, I E; Bharath, K P

    To compare CPP-ACP, Tri-calcium phosphate and Hydroxyapatite on remineralization of artificial caries like lesions on primary enamel. Ten extracted Primary molars coated with nail varnish, leaving a window of 2×4 mm on buccal and lingual surface were immersed in demineralizing solution for 96 hours and sectioned longitudinally to obtain 40 sections (4 sections per tooth) and were randomly divided into 4 groups (A to D) n=10; Group A: negative control, Group B: CPP-ACP, Group C: Tri-calcium phosphate, Group D: Hydroxyapatite. Sections were subjected to pH cycling for 10 days and were evaluated by polarized light microscope before and after treatment. Intra group comparison of demineralization and remineralization was done by paired t-test. One way ANOVA was used for multiple group comparisons followed by post HOC TUKEY'S Test for group wise comparisons. Remineralization was found more with Group D followed by Group B, C and A. Hydroxyapatite showed better remineralization when compared to CPP-ACP and Tri-calcium phosphate.

  6. Electronic Structures and Giant Magnetoresistance of Co/Cu Superlattices with Different Orientations

    Institute of Scientific and Technical Information of China (English)

    SHANG Jia-Xiang; ZHAO Xiao-Dan

    2006-01-01

    @@ The electronic structures of Co3 Cu3 superlattices with the orientations of (100), (110) and (111) are calculated by the first-principle method within the framework of the density functional theory. It has been found that the spin-dependent scattering and charge transfers are prominent at interfaces compared to the interior layers for the three orientation superlattices. We also evaluate the magnetoresistance ratio by using the two-current model The results show that the giant magnetoresistance ratio decreases in the order of (110), (100), (111) orientations for Co3Cu3 models (49. 4%, 37. 7%, 29.3%, respectively). Further analysis shows that an expansion of average atomic volume would enhance the magnetic moment of Co, which is consistent with other calculation and experimental results. In addition, the giant magnetoresistance effect is analysed from the point of charge transfer.

  7. Electrical control of memristance and magnetoresistance in oxide magnetic tunnel junctions

    KAUST Repository

    Zhang, Kun

    2015-01-01

    Electric-field control of magnetic and transport properties of magnetic tunnel junctions has promising applications in spintronics. Here, we experimentally demonstrate a reversible electrical manipulation of memristance, magnetoresistance, and exchange bias in Co/CoO–ZnO/Co magnetic tunnel junctions, which enables the realization of four nonvolatile resistance states. Moreover, greatly enhanced tunneling magnetoresistance of 68% was observed due to the enhanced spin polarization of the bottom Co/CoO interface. The ab initio calculations further indicate that the spin polarization of the Co/CoO interface is as high as 73% near the Fermi level and plenty of oxygen vacancies can induce metal–insulator transition of the CoO1−v layer. Thus, the electrical manipulation mechanism on the memristance, magnetoresistance and exchange bias can be attributed to the electric-field-driven migration of oxygen ions/vacancies between very thin CoO and ZnO layers.

  8. Magnetism and magnetoresistance from different origins in Co/ZnO:Al granular films

    Science.gov (United States)

    Quan, Zhiyong; Liu, Xia; Song, Zhilin; Xu, Xiaohong

    2016-12-01

    Co/ZnO:Al granular films were made on glass substrates by sequential magnetron sputter deposition of ultrathin Co layer and ZnO:Al layer at room temperature. The as-deposited films consist of superparamagnetic Co particles dispersed in ZnO:Al ( 2% Al) semiconductor matrix. Distinguished magnetoresistance effect at room temperature was obtained in the as-deposited films, which obviously reduced after annealing due to the growth of Co particles. The size of important magnetic particles was analyzed by Langevin function for hysteresis loops and magnetoresistance curves at room temperature. It was found that small magnetic particle contribute to magnetoresistance behavior and large particles dominate the room temperature magnetism in Co/ZnO:Al granular films.

  9. Tunnel anisotropic magnetoresistance in CoFeB|MgO|Ta junctions

    Energy Technology Data Exchange (ETDEWEB)

    Hatanaka, S.; Miwa, S., E-mail: miwa@mp.es.osaka-u.ac.jp; Matsuda, K.; Nawaoka, K.; Tanaka, K.; Morishita, H.; Goto, M.; Mizuochi, N.; Shinjo, T.; Suzuki, Y. [Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama, Toyonaka, Osaka 560-8531 (Japan)

    2015-08-24

    We found that CoFeB|MgO|Ta tunnel junctions exhibit tunnel anisotropic magnetoresistance (TAMR) at room temperature. The tunnel junctions exhibit positive magnetoresistance with the application of a magnetic field normal to the film plane. The dependencies on the applied magnetic field angle and MgO thickness reveal that the magnetoresistance originates from the TAMR, caused by the spin polarization and the spin-orbit interaction at the CoFeB|MgO interface. We also found that the TAMR can be used to detect ferromagnetic resonance in the CoFeB. This detection method could be useful for the characterization of nanomagnets that are free from the spin-transfer effect and the stray field of a reference layer, unlike conventional magnetic tunnel junctions.

  10. Monte Carlo simulation of magnetic multilayered structures with giant magnetoresistance effects

    Science.gov (United States)

    Prudnikov, V. V.; Prudnikov, P. V.; Romanovskiy, D. E.

    2016-02-01

    Description of giant magnetoresistance effects in magnetic multilayered structures with the use of the anisotropic Heisenberg model for determination of magnetic properties of thin ferromagnetic films forming these structures is given. Monte Carlo simulations of magnetic properties for structures, which are constructed from two ferromagnetic films divided by nonmagnetic film, are carried out. The temperature and magnetic field dependencies are considered for ferromagnetic and antiferromagnetic configurations of these structures. The calculation of the magnetoresistance is carried out for different thicknesses of the ferromagnetic films. It was shown, that the obtained temperature dependence for the magnetoresistance is agreed very well with experimental results, measured for the magnetic multilayered structures similar to structures, which are considered in our investigations.

  11. Giant amplification of tunnel magnetoresistance in a molecular junction: Molecular spin-valve transistor

    Energy Technology Data Exchange (ETDEWEB)

    Dhungana, Kamal B.; Pati, Ranjit, E-mail: patir@mtu.edu [Department of Physics, Michigan Technological University, Houghton, Michigan 49931 (United States)

    2014-04-21

    Amplification of tunnel magnetoresistance by gate field in a molecular junction is the most important requirement for the development of a molecular spin valve transistor. Herein, we predict a giant amplification of tunnel magnetoresistance in a single molecular spin valve junction, which consists of Ru-bis-terpyridine molecule as a spacer between two ferromagnetic nickel contacts. Based on the first-principles quantum transport approach, we show that a modest change in the gate field that is experimentally accessible can lead to a substantial amplification (320%) of tunnel magnetoresistance. The origin of such large amplification is attributed to the spin dependent modification of orbitals at the molecule-lead interface and the resultant Stark effect induced shift in channel position with respect to the Fermi energy.

  12. Size effects under a strong magnetic field: transverse magnetoresistance of thin gold films deposited on mica

    Energy Technology Data Exchange (ETDEWEB)

    Munoz, Raul C [Departamento de Fisica, Facultad de Ciencias Fisicas y Matematicas, Universidad de Chile, Blanco Encalada 2008, Casilla 487-3, Santiago (Chile); HenrIquez, Ricardo [Departamento de Fisica, Facultad de Ciencias, Universidad de Chile, Las Palmeras 3425, Santiago (Chile); GarcIa, Juan Pablo [Departamento de Fisica, Facultad de Ciencias Fisicas y Matematicas, Universidad de Chile, Blanco Encalada 2008, Casilla 487-3, Santiago (Chile); Moncada, Ana MarIa [Departamento de Fisica, Facultad de Ciencias, Universidad de Chile, Las Palmeras 3425, Santiago (Chile); Espinosa, Andres [Departamento de Fisica, Facultad de Ciencias Fisicas y Matematicas, Universidad de Chile, Blanco Encalada 2008, Casilla 487-3, Santiago (Chile); Robles, Marcelo [Departamento de Ciencias de la Construccion, Universidad Tecnologica Metropolitana, Dieciocho 390, Santiago (Chile); Kremer, German [Departamento de Fisica, Facultad de Ciencias, Universidad de Chile, Las Palmeras 3425, Santiago (Chile); Moraga, Luis [Departamento de Fisica, Facultad de Ciencias, Universidad de Chile, Las Palmeras 3425, Santiago (Chile); Cancino, Simon [Departamento de Fisica, Facultad de Ciencias, Universidad de Chile, Las Palmeras 3425, Santiago (Chile); Morales, Jose Roberto [Departamento de Fisica, Facultad de Ciencias, Universidad de Chile, Las Palmeras 3425, Santiago (Chile); RamIrez, Adan [Departamento de Fisica, Facultad de Ciencias Fisicas y Matematicas, Universidad de Chile, Blanco Encalada 2008, Casilla 487-3, Santiago (Chile); Oyarzun, Simon; Suarez, Marco Antonio; Chen, David [Departamento de Fisica, Facultad de Ciencias Fisicas y Matematicas, Universidad de Chile, Blanco Encalada 2008, Casilla 487-3, Santiago (Chile); Zumelzu, Ernesto; Lizama, Claudio [Facultad de Ciencias de la IngenierIa, Universidad Austral, General Lagos 2086, Valdivia (Chile)

    2006-04-05

    We report measurements of transverse magnetoresistance where the signal can be attributed to electron-surface scattering, together with measurements of the surface roughness of the films on an atomic scale. The measurements were performed with a scanning tunnelling microscope (STM) on four thin gold films evaporated onto mica. The magnetoresistance exhibits a marked thickness dependence: at 4 K and 9 T is about 5% for the thinner (69 nm) film, and about 14% for the thicker (185 nm) film. Sondheimer's theory provides an accurate description of the temperature dependence of the resistivity, but predicts a magnetoresistance one order of magnitude smaller than that observed at 4 K. Calecki's theory in the limit of small roughness correlation length, predicts a resistivity two orders of magnitude larger than observed at 4 K.

  13. Crystalline Structure, Electrophysical and Magnetoresistive Properties of High Entropy Film Alloys

    Directory of Open Access Journals (Sweden)

    S.I. Vorobiov

    2016-10-01

    Full Text Available The results of research the phase composition and electrophysical (resistivity, thermal coefficient of resistance, strain coefficient and magnetoresistive properties (anisotropic magnetoresistance of thin films (to 40 nm high entropy alloys (HEA based on Al, Cu, Ni, Cr, Fe, Co and Ti. It is established that after forming the layered samples by electron condensation on diffraction pattern fixed lines from the two phases of the fcc lattice and actually tracks the bcc phase. After homogenization by annealing the samples is one of the fcc phase s.s. HEA and traces bcc phase (likely s.s. (-Fe, Cr, that samples are single phase. The study electrical properties allowed watching the first double-stage plastic deformation of a large value of the coefficient gauge (300 units, watch probably, is typical for НЕА. The character dependences MR from induction indicates to realization of anisotropic magnetoresistance.

  14. Electric field dependence of junction magnetoresistance in magnetite/semiconductor heterostructure at room temperature

    Energy Technology Data Exchange (ETDEWEB)

    Aireddy, H.; Bhaumik, S.; Das, A. K., E-mail: amal@phy.iitkgp.ernet.in [Department of Physics, Indian Institute of Technology, Kharagpur 721 302 (India)

    2015-12-07

    We have fabricated Fe{sub 3}O{sub 4}/p-Si heterojunction using pulsed laser deposition technique and explored its electro-magnetic transport properties. The heterojunction exhibits backward rectifying property at all temperatures, and appraisal of giant junction magnetoresistance (JMR) is observed at room temperature (RT). Conspicuously, the variation and sign change of JMR as a function of electric field is observed at RT. The backward rectifying behavior of the device is ascribed to the highly doped p-type (p{sup ++}) semiconducting nature of Fe{sub 3}O{sub 4}, and the origin of electric field (voltage) dependence of magnetoresistance is explained proposing electronic band diagram of Fe{sub 3}O{sub 4}/SiO{sub 2}/p-Si heterojunction. This interesting result may have importance to integrate Si-based magnetoresistance sources in multifunctional spintronic devices.

  15. Synthesis and characterization of Copper/Cobalt/Copper/Iron nanostructurated films with magnetoresistive properties

    Science.gov (United States)

    Ciupinǎ, Victor; Prioteasa, Iulian; Ilie, Daniela; Manu, Radu; Petrǎşescu, Lucian; Tutun, Ştefan Gabriel; Dincǎ, Paul; MustaÅ£ǎ, Ion; Lungu, Cristian Petricǎ; Jepu, IonuÅ£; Vasile, Eugeniu; Nicolescu, Virginia; Vladoiu, Rodica

    2017-02-01

    Copper/Cobalt/Copper/Iron thin films were synthesized in order to obtain nanostructured materials with special magnetoresistive properties. The multilayer films were deposited on silicon substrates. In this respect we used Thermionic Vacuum Arc Discharge Method (TVA). The benefit of this deposition technique is the ability to have a controlled range of thicknesses starting from few nanometers to hundreds of nanometers. The purity of the thin films was insured by a high vacuum pressure and a lack of any kind of buffer gas inside the coating chamber. The morphology and structure of the thin films were analyzed using Scanning Electron Microscopy (SEM) and Transmission Electron Microscopy (TEM) Techniques and Energy Dispersive X-ray Spectroscopy (EDXS). Magnetoresistive measurement results depict that thin films possess Giant Magneto-Resistance Effect (GMR). Magneto-Optic-Kerr Effect (MOKE) studies were performed to characterize the magnetic properties of these thin films.

  16. Room temperature giant and linear magnetoresistance in topological insulator Bi2Te3 nanosheets.

    Science.gov (United States)

    Wang, Xiaolin; Du, Yi; Dou, Shixue; Zhang, Chao

    2012-06-29

    Topological insulators, a new class of condensed matter having bulk insulating states and gapless metallic surface states, have demonstrated fascinating quantum effects. However, the potential practical applications of the topological insulators are still under exploration worldwide. We demonstrate that nanosheets of a Bi(2)Te(3) topological insulator several quintuple layers thick display giant and linear magnetoresistance. The giant and linear magnetoresistance achieved is as high as over 600% at room temperature, with a trend towards further increase at higher temperatures, as well as being weakly temperature-dependent and linear with the field, without any sign of saturation at measured fields up to 13 T. Furthermore, we observed a magnetic field induced gap below 10 K. The observation of giant and linear magnetoresistance paves the way for 3D topological insulators to be useful for practical applications in magnetoelectronic sensors such as disk reading heads, mechatronics, and other multifunctional electromagnetic applications.

  17. Piecewise parabolic negative magnetoresistance of two-dimensional electron gas with triangular antidot lattice

    Energy Technology Data Exchange (ETDEWEB)

    Budantsev, M. V., E-mail: budants@isp.nsc.ru; Lavrov, R. A.; Pogosov, A. G.; Zhdanov, E. Yu.; Pokhabov, D. A. [Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation)

    2011-02-15

    Extraordinary piecewise parabolic behavior of the magnetoresistance has been experimentally detected in the two-dimensional electron gas with a dense triangular lattice of antidots, where commensurability magnetoresistance oscillations are suppressed. The magnetic field range of 0-0.6 T can be divided into three wide regions, in each of which the magnetoresistance is described by parabolic dependences with high accuracy (comparable to the experimental accuracy) and the transition regions between adjacent regions are much narrower than the regions themselves. In the region corresponding to the weakest magnetic fields, the parabolic behavior becomes almost linear. The observed behavior is reproducible as the electron gas density changes, which results in a change in the resistance by more than an order of magnitude. Possible physical mechanisms responsible for the observed behavior, including so-called 'memory effects,' are discussed.

  18. Termination layer compensated tunnelling magnetoresistance in ferrimagnetic Heusler compounds with high perpendicular magnetic anisotropy.

    Science.gov (United States)

    Jeong, Jaewoo; Ferrante, Yari; Faleev, Sergey V; Samant, Mahesh G; Felser, Claudia; Parkin, Stuart S P

    2016-01-18

    Although high-tunnelling spin polarization has been observed in soft, ferromagnetic, and predicted for hard, ferrimagnetic Heusler materials, there has been no experimental observation to date of high-tunnelling magnetoresistance in the latter. Here we report the preparation of highly textured, polycrystalline Mn3Ge films on amorphous substrates, with very high magnetic anisotropy fields exceeding 7 T, making them technologically relevant. However, the small and negative tunnelling magnetoresistance that we find is attributed to predominant tunnelling from the lower moment Mn-Ge termination layers that are oppositely magnetized to the higher moment Mn-Mn layers. The net spin polarization of the current reflects the different proportions of the two distinct termination layers and their associated tunnelling matrix elements that result from inevitable atomic scale roughness. We show that by engineering the spin polarization of the two termination layers to be of the same sign, even though these layers are oppositely magnetized, high-tunnelling magnetoresistance is possible.

  19. MAGNETORESISTANCE EFFECT OBSERVED IN Fe/Mo MULTILAYERS PREPARED BY ELECTRON BEAM EVAPORATION

    Institute of Scientific and Technical Information of China (English)

    T. He; B. Zhao; Y. Gao; F. Zeng; F. Pan

    2003-01-01

    The Fe/Mo multilayers were prepared by electron beam evaporation, the microstructure and magnetic properties of the multilayers were studied by X-ray diffraction, vibratingsample magnetometer (VSM) et al. The experimental results revealed that the Fe/Mo multilayers in our experimental conditions behaved magnetoresistance effect with a sharp peak on magnetoresistance (MR) ratio curve, and magnetoresistance is easily saturated at low applied magnetic fields. For [Fe(1.5nm)/Mo(1.0nm)]42 multilayers,MR ratio could arrive to 0.1%. The antiferromagnetic interlayer coupling could be observed in some films at room temperature. The strength of the antiferromagnetic interlayer coupling J in the films is low because of the low saturation field Hs. The relationship between magnetic properties and microstructure was also discussed in this paper.

  20. Magnetism and magnetoresistance from different origins in Co/ZnO:Al granular films

    Energy Technology Data Exchange (ETDEWEB)

    Quan, Zhiyong, E-mail: quanzy@sxnu.edu.cn; Liu, Xia; Song, Zhilin; Xu, Xiaohong, E-mail: xuxh@dns.sxnu.edu.cn

    2016-12-01

    Co/ZnO:Al granular films were made on glass substrates by sequential magnetron sputter deposition of ultrathin Co layer and ZnO:Al layer at room temperature. The as-deposited films consist of superparamagnetic Co particles dispersed in ZnO:Al (~2% Al) semiconductor matrix. Distinguished magnetoresistance effect at room temperature was obtained in the as-deposited films, which obviously reduced after annealing due to the growth of Co particles. The size of important magnetic particles was analyzed by Langevin function for hysteresis loops and magnetoresistance curves at room temperature. It was found that small magnetic particle contribute to magnetoresistance behavior and large particles dominate the room temperature magnetism in Co/ZnO:Al granular films.

  1. Anomalous Hall effect and magnetoresistance behavior in Co/Pd1−xAgx multilayers

    KAUST Repository

    Guo, Z. B.

    2013-02-13

    In this paper, we report anomalous Hall effect (AHE) correlated with the magnetoresistance behavior in [Co/Pd1-xAg x]n multilayers. For the multilayers with n = 6, the increase in Ag content from x = 0 to 0.52 induces the change in AHE sign from negative surface scattering-dominated AHE to positive interface scattering-dominated AHE, which is accompanied with the transition from anisotropy magnetoresistance (AMR) dominated transport to giant magnetoresistance (GMR) dominated transport. For n = 80, scaling analysis with Rs ∝ρ xx γ yields γ ∼ 3.44 for x = 0.52 which presents GMR-type transport, in contrast to γ ∼ 5.7 for x = 0 which presents AMR-type transport. © 2013 American Institute of Physics.

  2. Magnetoresistance in Hybrid Organic Spin Valves at the Onset of Multiple-Step Tunneling

    Science.gov (United States)

    Schoonus, J. J. H. M.; Lumens, P. G. E.; Wagemans, W.; Kohlhepp, J. T.; Bobbert, P. A.; Swagten, H. J. M.; Koopmans, B.

    2009-10-01

    By combining experiments with simple model calculations, we obtain new insight in spin transport through hybrid, CoFeB/Al2O3(1.5nm)/tris(8-hydroxyquinoline)aluminium (Alq3)/Co spin valves. We have measured the characteristic changes in the I-V behavior as well as the intrinsic loss of magnetoresistance at the onset of multiple-step tunneling. In the regime of multiple-step tunneling, under the condition of low hopping rates, spin precession in the presence of hyperfine coupling is conjectured to be the relevant source of spin relaxation. A quantitative analysis leads to the prediction of a symmetric magnetoresistance around zero magnetic field in addition to the hysteretic magnetoresistance curves, which are indeed observed in our experiments.

  3. Termination layer compensated tunnelling magnetoresistance in ferrimagnetic Heusler compounds with high perpendicular magnetic anisotropy

    Science.gov (United States)

    Jeong, Jaewoo; Ferrante, Yari; Faleev, Sergey V.; Samant, Mahesh G.; Felser, Claudia; Parkin, Stuart S. P.

    2016-01-01

    Although high-tunnelling spin polarization has been observed in soft, ferromagnetic, and predicted for hard, ferrimagnetic Heusler materials, there has been no experimental observation to date of high-tunnelling magnetoresistance in the latter. Here we report the preparation of highly textured, polycrystalline Mn3Ge films on amorphous substrates, with very high magnetic anisotropy fields exceeding 7 T, making them technologically relevant. However, the small and negative tunnelling magnetoresistance that we find is attributed to predominant tunnelling from the lower moment Mn-Ge termination layers that are oppositely magnetized to the higher moment Mn-Mn layers. The net spin polarization of the current reflects the different proportions of the two distinct termination layers and their associated tunnelling matrix elements that result from inevitable atomic scale roughness. We show that by engineering the spin polarization of the two termination layers to be of the same sign, even though these layers are oppositely magnetized, high-tunnelling magnetoresistance is possible.

  4. Efficient spin injection and giant magnetoresistance in Fe / MoS 2 / Fe junctions

    KAUST Repository

    Dolui, Kapildeb

    2014-07-02

    We demonstrate giant magnetoresistance in Fe/MoS2/Fe junctions by means of ab initio transport calculations. We show that junctions incorporating either a monolayer or a bilayer of MoS2 are metallic and that Fe acts as an efficient spin injector into MoS2 with an efficiency of about 45%. This is the result of the strong coupling between the Fe and S atoms at the interface. For junctions of greater thickness, a maximum magnetoresistance of ∼300% is obtained, which remains robust with the applied bias as long as transport is in the tunneling limit. A general recipe for improving the magnetoresistance in spin valves incorporating layered transition metal dichalcogenides is proposed. © 2014 American Physical Society.

  5. Study of the different magnetoresistance sources in Ag/Co multilayers

    CERN Document Server

    Paje, S E; Andres, J P; Riveiro, J M

    2003-01-01

    We report results on magnetoresistance and magnetic properties of sputtered Ag/Co multilayers and their relation to structural properties. We found two components of the magnetoresistance: isotropic and anisotropic. The first one is found to be related to cobalt particles at the interfaces between magnetic and nonmagnetic layers and also to cobalt particles diluted into the silver layers. The other contribution is related to ferromagnetic multidomain Co layers. The results on magnetoresistance and magnetization at low fields, and conductivity measurements, give clear proof of a transition from granular to continuous structure of the magnetic layer. For example, in a Ag/Co multilayer series with silver thickness of 20 A, such a transition occurs for a cobalt thickness around 5 A.

  6. Hydrodynamic theory of thermoelectric transport and negative magnetoresistance in Weyl semimetals

    CERN Document Server

    Lucas, Andrew; Sachdev, Subir

    2016-01-01

    We present a minimal hydrodynamic formalism for thermoelectric transport in Weyl semimetals where the electron-electron scattering time is faster than the electron-impurity scattering time. Our model consists of relativistic fluids at each Weyl node, coupled together by perturbatively small inter-valley scattering, and long-range Coulomb interactions. We analytically compute all thermoelectric transport coefficients in the limit of perturbatively weak disorder and magnetic field, and confirm Onsager reciprocity and positive-definiteness of the conductivity matrix. Three distinct anomalous relaxation times govern negative magnetoresistance in the thermoelectric transport coefficients: while negative electrical magnetoresistance is governed by the standard chiral anomaly, negative thermal magnetoresistance is governed by a distinct gauge-gravitational anomaly. All of the hydrodynamic coefficients in our formalism may be computed for a given microscopic model of a Weyl semimetal via memory matrix techniques.

  7. Magnetoresistance of nanogranular Ni/NiO controlled by exchange anisotropy

    Energy Technology Data Exchange (ETDEWEB)

    Del Bianco, L., E-mail: lucia.delbianco@unibo.it [Dipartimento di Fisica e Astronomia, Università di Bologna, I-40127 Bologna (Italy); Spizzo, F.; Tamisari, M. [Dipartimento di Fisica e Scienze della Terra, Università di Ferrara, I-44122 Ferrara (Italy); Allia, P. [Dipartimento di Scienza Applicata e Tecnologia, Politecnico di Torino, I-10129 Torino (Italy)

    2013-08-15

    A link between exchange anisotropy and magnetoresistance has been found to occur in a Ni/NiO sample consisting of Ni nanocrystallites (mean size ∼13 nm, Ni content ∼33 vol%) dispersed in a NiO matrix. This material shows metallic-type electric conduction and isotropic spin-dependent magnetoresistance as well as exchange bias effect. The latter is the outcome of an exchange anisotropy arising from the contact interaction between the Ni phase and the NiO matrix. Combined analysis of magnetization M(H) and magnetoresistance MR(H) loops measured in the 5–250 K temperature range after zero-field-cooling (ZFC) and after field-cooling (FC) from 300 K reveals that the magnetoresistance is influenced by exchange anisotropy, which is triggered by the FC process and can be modified in strength by varying the temperature. Compared to the ZFC case, the exchange anisotropy produces a horizontal shift of the FC MR(H) loop along with a reduction of the MR response associated to the reorientation of the Ni moments. A strict connection between magnetoresistance and remanent magnetization of FC loops on one side and the exchange field on the other, ruled by exchange anisotropy, is indicated. - Highlights: • Nanogranular Ni/NiO with giant magnetoresistance (MR) and exchange bias effect. • Exchange anisotropy produces a shift of the field-cooled MR(H) loop and reduces MR. • MR, remanence of field-cooled loops and exchange field are three correlated quantities. • It is possible to control MR of nanogranular systems through the exchange anisotropy.

  8. Magnetoresistance in antiferromagnet-based spin tunnel junctions

    Science.gov (United States)

    Jungwirth, Tomas

    2012-02-01

    To date spintronics research and applications of magnetically ordered systems have focused on ferromagnets (FMs). There are, however, fundamental physical limitations for FM materials which may make them impractical to realize the full potential of spintronics. Metal FMs offer high temperature operation but the large magnetic stray fields make them unfavorable for high-density integration and metals are unsuitable for transistor and information processing applications. FM semiconductors on the other hand do not allow for high-temperature operation. We present a concept in which these limitations are circumvented in spintronics based on antiferromagnets. The concept is based on relativistic magnetic and magneto-transport anisotropy effects in nanodevices whose common characteristics is that they are an even function of the microscopic magnetic moment vector, i.e., can be equally strong in AFMs as in FMs. As a demonstration we present our experimental observation of >100% tunneling anisotropic magnetoresistance in a device with an IrMn AFM tunnel electrode [1]. We will also discuss candidate materials for high-temperature AFM semiconductor spintronics [2].[4pt] [1] B. G. Park, J.Wunderlich, X.Marti, V.Holy, Y.Kurosaki, M.Yamada, H.Yamamoto, A.Nishide, J.Hayakawa, H.Takahashi, A.B.Shick, T.Jungwirth, Nature Mat. 10, 347 (2011). [0pt] [2] T.Jungwirth, V.Nov'ak, X.Marti, M.Cukr, F.M'aca, A.B. Shick, J.Masek, P.Horodysk'a, P.Nemec, V.Hol'y, et al., Phys. Rev. B 83, 035321 (2011).

  9. Tunnel Magnetoresistance Sensors with Magnetostrictive Electrodes: Strain Sensors

    Directory of Open Access Journals (Sweden)

    Ali Tavassolizadeh

    2016-11-01

    Full Text Available Magnetostrictive tunnel magnetoresistance (TMR sensors pose a bright perspective in micro- and nano-scale strain sensing technology. The behavior of TMR sensors under mechanical stress as well as their sensitivity to the applied stress depends on the magnetization configuration of magnetic tunnel junctions (MTJs with respect to the stress axis. Here, we propose a configuration resulting in an inverse effect on the tunnel resistance by tensile and compressive stresses. Numerical simulations, based on a modified Stoner–Wohlfarth (SW model, are performed in order to understand the magnetization reversal of the sense layer and to find out the optimum bias magnetic field required for high strain sensitivity. At a bias field of −3.2 kA/m under a 0.2 × 10 - 3 strain, gauge factors of 2294 and −311 are calculated under tensile and compressive stresses, respectively. Modeling results are investigated experimentally on a round junction with a diameter of 30 ± 0.2 μ m using a four-point bending apparatus. The measured field and strain loops exhibit nearly the same trends as the calculated ones. Also, the gauge factors are in the same range. The junction exhibits gauge factors of 2150 ± 30 and −260 for tensile and compressive stresses, respectively, under a −3.2 kA/m bias magnetic field. The agreement of the experimental and modeling results approves the proposed configuration for high sensitivity and ability to detect both tensile and compressive stresses by a single TMR sensor.

  10. Electrical and magnetoresistivity studies in chemical solution deposited La

    Energy Technology Data Exchange (ETDEWEB)

    Angappane, S.; Murugaraj, P.; Sethupathi, K.; Rangarajan, G.; Sastry, V. S.; Chakkaravarthi, A. Arul; Ramasamy, P.

    2001-06-01

    High quality magnetoresistive La{sub (1{minus}x)}Ca{sub x}MnO{sub 3} thin films have been prepared by the chemical solution deposition technique. A solution of propionate precursors of lanthanum, calcium, and manganese in propionic acid was used for this purpose. Films of varying compositions (x varying from 0.1 to 0.4) were spin coated on to LaAlO{sub 3}(100) and SrTiO{sub 3}(100) substrates at room temperature and pyrolyzed in the temperature range 600{endash}850{degree}C. For fixed compositions, annealing at higher temperatures shifts the insulator{endash}metal transition temperature (T{sub I{endash}M}) to higher values accompanied by a reduction in the resistivity values. The T{sub I{endash}M} variation for different x values was found to be less pronounced in the compositions x=0.2, 0.3, and 0.4. Typical T{sub I{endash}M} values of 283 K and 290 K were obtained for La{sub 0.7}Ca{sub 0.3}MnO{sub 3} coated on LaAlO{sub 3} and SrTiO{sub 3} substrates, respectively, when annealed at 850{degree}C. The substrate effect was found to be more pronounced for the x value 0.1 which showed two peaks (one at 271 K and another at 122 K) in the {rho}-T curve. The roles of substrate mismatch, composition variation, and annealing temperatures are discussed. {copyright} 2001 American Institute of Physics.

  11. Resistivity plateau and extreme magnetoresistance in LaSb

    Science.gov (United States)

    Tafti, F. F.; Gibson, Q. D.; Kushwaha, S. K.; Haldolaarachchige, N.; Cava, R. J.

    2016-03-01

    Time reversal symmetry (TRS) protects the metallic surface modes of topological insulators (TIs). The transport signature of such surface states is a plateau that arrests the exponential divergence of the insulating bulk with decreasing temperature. This universal behaviour is observed in all TI candidates ranging from Bi2Te2Se to SmB6. Recently, extreme magnetoresistance (XMR) has been reported in several topological semimetals which exhibit TI universal resistivity behaviour only when breaking time reversal symmetry, a regime where TIs theoretically cease to exist. Among these materials, TaAs and NbP are nominated as Weyl semimetals owing to their lack of inversion symmetry, Cd3As2 is known as a Dirac semimetal owing to its linear band crossing at the Fermi level, and WTe2 is termed a resonant compensated semimetal owing to its perfect electron-hole symmetry. Here we introduce LaSb, a simple rock-salt structure material that lacks broken inversion symmetry, perfect linear band crossing, and perfect electron-hole symmetry yet exhibits all the exotic field-induced behaviours of these more complex semimetals. It shows a field-induced universal TI resistivity with a plateau at roughly 15 K, ultrahigh mobility of carriers in the plateau region, quantum oscillations with the angle dependence of a two-dimensional Fermi surface, and XMR of about one million percent at 9 T. Owing to its structural simplicity, LaSb represents an ideal model system to formulate a theoretical understanding of the exotic consequences of breaking time reversal symmetry in topological semimetals.

  12. A novel CMOS transducer for giant magnetoresistance sensors

    Science.gov (United States)

    Luong, Van Su; Lu, Chih-Cheng; Yang, Jing-Wen; Jeng, Jen-Tzong

    2017-02-01

    In this work, an ASIC (application specific integrated circuits) transducer circuit for field modulated giant magnetoresistance (GMR) sensors was designed and fabricated using a 0.18-μ m CMOS process. The transducer circuits consist of a frequency divider, a digital phase shifter, an instrument amplifier, and an analog mixer. These comprise a mix of analog and digital circuit techniques. The compact chip size of 1.5 mm × 1.5 mm for both analog and digital parts was achieved using the TSMC18 1P6M (1-polysilicon 6-metal) process design kit, and the characteristics of the system were simulated using an HSpice simulator. The output of the transducer circuit is the result of the first harmonic detection, which resolves the modulated field using a phase sensitive detection (PSD) technique and is proportional to the measured magnetic field. When the dual-bridge GMR sensor is driven by the transducer circuit with a current of 10 mA at 10 kHz, the observed sensitivity of the field sensor is 10.2 mV/V/Oe and the nonlinearity error was 3% in the linear range of ±1 Oe. The performance of the system was also verified by rotating the sensor system horizontally in earth's magnetic field and recording the sinusoidal output with respect to the azimuth angle, which exhibits an error of less than ±0.04 Oe. These results prove that the ASIC transducer is suitable for driving the AC field modulated GMR sensors applied to geomagnetic measurement.

  13. Magnetic-based biomolecule detection using giant magnetoresistance sensors

    Science.gov (United States)

    Kokkinis, G.; Jamalieh, M.; Cardoso, F.; Cardoso, S.; Keplinger, F.; Giouroudi, I.

    2015-05-01

    This paper presents a novel microfluidic chip for in-vitro detection of biomolecules tagged by magnetic microparticles (MAPs) suspended in a static fluid. The system consists of two microfluidic channels: a reference channel in which bare MAPs are suspended and a detection channel in which magnetically tagged biomolecules are suspended (LMAPs). The LMAPs are functionalized MAPs (of the same magnetic volume as the ones in the reference channel) with attached biomolecules. The overall, non-magnetic volume of the LMAPs is greater than that of the bare MAPs. Current carrying microconductors are positioned underneath the channels in order to impose a magnetic field gradient to the MAPs and LMAPs and move them from the inlet to the outlet of the channels without flow. The innovative aspect of the proposed method is that the induced velocity on the MAPs and LMAPs, while imposed to the same magnetic field gradient, is inversely proportional to their overall, non-magnetic volume. This is due to the enhanced Stokes drag force exerted on the LMAPs, resulting from the greater volume and altered hydrodynamic shape. This induced velocity is measured by utilizing Giant Magnetoresistance (GMR) sensor pairs fabricated underneath the first and the last microconductors. Detected differences in velocity between the LMAPs and the reference MAPs indicate the presence of biomolecules in the static liquid sample. We also present a novel method for signal acquisition and demodulation: expensive function generators, data acquisition devices, and lock-in amplifiers were substituted by a generic PC sound card and an algorithm combining the Fast Fourier Transform of the signal with a peak detection routine. Experiments with functionalized MAPs and magnetically tagged Escherichia coli (representing the LMAPs) were carried out as a proof of concept. In order to identify the detection limit of the GMR sensor, single MAP (2.8 μm diameter) detection was performed.

  14. Tunneling magnetoresistance dependence on the temperature in a ferromagnetic Zener diode

    Energy Technology Data Exchange (ETDEWEB)

    Comesana, E; Aldegunde, M; GarcIa-Loureiro, A, E-mail: enrique.comesana@usc.e [Departamento de Electronica e Computacion, Universidade de Santiago de Compostela, 15782 Santiago de Compostela (Spain)

    2009-11-15

    In the present work we focus on the study of the temperature dependence of the tunnelling current in a ferromagnetic Zener diode. We predict the tunneling magnetoresistance dependence on the temperature. Large doping concentrations lead to magnetic semiconductors with Curie temperature T{sub C} near or over room temperature and this will facilitate the introduction of new devices that make use of the ferromagnetism effects. According to our calculations the tunneling magnetoresistance has the form TMR {proportional_to} (T{sup n}{sub C}-T{sup n}).

  15. Structure and Magnetoresistive Properties of Thee-layer Film Systems Based on Permalloy and Copper

    Directory of Open Access Journals (Sweden)

    Yu.O. Shkurdoda

    2016-06-01

    Full Text Available Structural and phase composition and magnetoresistive properties of three-layer film systems based on permalloy and copper were investigated. The samples were obtained by layer by layer condensation method with followed heat treatment to the 300-700 K temperature range. Shown that the spin-dependent scattering of electrons realizing in the range of layer thicknesses (dCu = 6-15 nm and dPy = 25-40 nm of the condensed and annealed at 400 K samples. The Maximum GMR observed after annealing the samples at 400 K and annealing to 550 K leads to anisotropic magnetoresistance occurrence.

  16. Performance of Focused Ion Beam Trimmed Yoke-Type Magnetoresistive Heads for Magnetic Microscopy

    OpenAIRE

    Phillips, Gavin N.; Eisenberg, Martin; Draaisma, Eddie A.; Abelmann, Leon; Lodder, J. Cock

    2002-01-01

    Thin-film yoke-type magnetoresistive (MR) tape heads with eight channels have been used for scanning magnetoresistance microscopy. The NiFe read flux guides of the channels have been trimmed down from 12 ¿m to widths varying between 5 ¿m and 100 nm by focused ion-beam milling with Ga+ ions. The tape-bearing surface of the milled regions has been reconstructed in situ by the local deposition of Pt. Tracks with a minimum bit length of 1 ¿m have been written on Co-Ni-O metal evaporated tape and ...

  17. Investigation of doping and particle size effect on structural, magnetic and magnetoresistance properties of manganites

    Directory of Open Access Journals (Sweden)

    M. Hakimi

    2008-06-01

    Full Text Available  In this paper after introduction of manganites, we have studied the effect of particle size and doping on structural, magnetic and magnetoresistance of LSMO manganite samples. The magnetoresistance measurements show that, by decreasing the particle size LFMR increases. Also the results show that the LFMR increases at low doping levels and decreases at high doping levels. The spin dependent tunneling and scattering at the grain boundaries is the origin of increasing the LFMR at low doping levels. Also the substitution of impurity ions at Mn sites and subsequently weaking of double exchange is responsible for decreasing of LFMR at high doping level.

  18. Anisotropic Magnetoresistance Effect in Amorphous and Nanocrystalline Fe(Cu,Nb)-Si-B Alloys

    Institute of Scientific and Technical Information of China (English)

    2000-01-01

    The magnetoresistance effect and magnetic properties in amorphous and nanocrystalline Fe(Cu, Nb)-Si-B ribbons have been investigated. It was observed that the anisotropic magnetoresistance (AMR) of nanocrystalline alloy is much smaller than that of amorphous alloy, indicating that the anisotropy of nanocrystalline alloy becomes smaller after crystallizing, and the smallest AMR is coincident with the excellent soft magnetic characteristics. It is believed that the smaller magnetic crystalline anisotropy is the origin of the excellent soft magnetic characteristics of nanocrystalline alloy.

  19. Abnormal magnetoresistance behavior in Nb thin films with rectangular arrays of antidots

    Institute of Scientific and Technical Information of China (English)

    Zhang Wei-Jun; Zhao Shi-Ping; Qiu Xiang-Gang; He Shi-Kun; Li Bo-Hong; Cheng Fei; Xu Bing; Wen Zhen-Chao; Cao Wen-Hui; Xiao Hong; Han Xiu-Feng

    2012-01-01

    Magnetoresistance in superconducting Nb films perforated with rectangular arrays of antidots (holes) is investigated at various temperatures and currents.Normally,the magnetoresistance increases with the increasing magnetic field.In this paper,we report a reverse behavior in a certain range of high fields after vortex reconfiguration transition,where the resistances at non-matching fields are smaller than those in the low field regime.This phenomenon is due to a strong caging effect,in which the interstitial vortices are trapped among the pinned multiquanta vortices.This effect is temperature and current dependent.

  20. Correlation Between Magnetovolume and Colossal Magnetoresistance Effects in Terbium Doped La-Sr-Mn-O Perovskite

    Institute of Scientific and Technical Information of China (English)

    WU Jian; ZHANG Shi-Yuan; YIN Shi-Long; CAO Qing-Qi; GU Kun-Ming; DU You-Wei

    2000-01-01

    (La0.67 Tb0.33 )2/3Sr1/3MnO3 has been studied in order to probe mechanisms responsible for the giant magnetoresistance ratios and the lattice effect in this kind of compound. The experiment has shown a strong connection between the magnetotransport and magnetovolume properties. An applied magnetic field not only gives rise to a large negative magnetoresistance (-900%) but also produces two different magnetovolume effects which reflect two different magnetostriction mechanisms in the compound.

  1. Lab-on-Chip Cytometry Based on Magnetoresistive Sensors for Bacteria Detection in Milk

    Directory of Open Access Journals (Sweden)

    Ana C. Fernandes

    2014-08-01

    Full Text Available Flow cytometers have been optimized for use in portable platforms, where cell separation, identification and counting can be achieved in a compact and modular format. This feature can be combined with magnetic detection, where magnetoresistive sensors can be integrated within microfluidic channels to detect magnetically labelled cells. This work describes a platform for in-flow detection of magnetically labelled cells with a magneto-resistive based cell cytometer. In particular, we present an example for the validation of the platform as a magnetic counter that identifies and quantifies Streptococcus agalactiae in milk.

  2. Three-dimensional integration technology of magnetic tunnel junctions for magnetoresistive random access memory application

    Science.gov (United States)

    Yakushiji, Kay; Takagi, Hideki; Watanabe, Naoya; Fukushima, Akio; Kikuchi, Katsuya; Kurashima, Yuuichi; Sugihara, Atsushi; Kubota, Hitoshi; Yuasa, Shinji

    2017-06-01

    Three-dimensional integration processes (based on direct wafer bonding and back-surface silicon removal) for magnetic tunnel junctions with perpendicular magnetization (p-MTJs) were developed. Perfect wafer bonding, namely, bonding without interfacial voids, and damageless silicon removal were successfully demonstrated by using very flat tantalum cap layers. Moreover, p-MTJ nanopillars subjected to these processes exhibited no degradation in magnetoresistance or spin-transfer-torque (STT) switching. Magnetoresistive random access memory (MRAM) technology incorporating these processes (direct wafer bonding and back-surface silicon removal) will make it possible to integrate epitaxial MTJs (with a single-crystal tunnel barrier) and ferromagnetic electrode layers (based on new materials).

  3. Comparison of magnetoresistances of triangular and rectangular ballistic graphene npn junctions

    Science.gov (United States)

    Morikawa, Sei; Masubuchi, Satroru; Watanabe, Kenji; Taniguchi, Takashi; Machida, Tomoki

    2016-10-01

    We compared the magnetotransport properties of ballistic graphene npn junctions with two different geometries. We found that a rectangular npn junction shows a positive magnetoresistance around zero magnetic field; this finding can be explained by the suppression of Klein tunneling in a finite magnetic field. In contrast, a triangular npn junction shows a negative magnetoresistance because the transmission is enhanced in a commensurability magnetic field where the ballistic carriers in a cyclotron motion are injected perpendicularly to both the np and pn interfaces. These results suggest possibilities for manipulating ballistic carrier trajectories through the designs of local-gate geometries.

  4. A top-contacted extraordinary magnetoresistance sensor fabricated with an unpatterned semiconductor epilayer

    KAUST Repository

    Sun, Jian

    2013-04-01

    An extraordinary magnetoresistance device is developed from an unpatterned semiconductor epilayer onto which the metal contacts are fabricated. Compared with conventionally fabricated devices, for which semiconductor patterning and precise alignment are required, this design is not only easier from a technological point of view, but it also has the potential to reduce damage introduced to the semiconductor during fabrication. The device shows a similar magnetoresistance ratio as a conventional one but it has a lower sensitivity. Because of the reduced resistance, and hence less noise, high magnetic field resolution is maintained. © 1980-2012 IEEE.

  5. Effect of MR Element Slant Angle on Output Voltage of Magnetoresistive Device

    Institute of Scientific and Technical Information of China (English)

    Y L Jing; Yu Shi; H W Zhang; X D Jiang; H J Zheng

    2006-01-01

    Correlation between optimum of MR element slant angle and the ratio of magnetic pole length to magnetoresistance element length on linear magnetic encoder is explored in this paper. Optimum slant angle of MR element is different and increases in proportion to the ratio of magnetic pole length to MR element length by slant multi-phase filtering model.

  6. Temperature dependence of spin Hall magnetoresistance in thin YIG/Pt films

    Science.gov (United States)

    Marmion, S. R.; Ali, M.; McLaren, M.; Williams, D. A.; Hickey, B. J.

    2014-06-01

    We report on the temperature dependence of the recently discovered spin Hall magnetoresistance in a yttrium iron garnet (YIG)/platinum (Pt) thin film. The YIG/Pt layers are an ideal choice as the combination of an insulating magnetic material and the high spin-orbit interaction in Pt gives a relatively large magnetoresistance and no electrical conduction occurs in the YIG. The temperature dependence of the magnetoresistance was measured between 1.4 K and 280 K from which the temperature dependence of the spin diffusion length in Pt has been extracted. We found that the best agreement between our data and the recently published [Chen et al., Phys. Rev. B 87, 144411 (2013), 10.1103/PhysRevB.87.144411] theory of the spin Hall magnetoresistance is given by an assumed Elliot-Yafet mechanism of spin relaxation with temperature-independent spin Hall angle and spin mixing conductance. The best estimate for the spin diffusion length returns values between 0.57 and 3.85 nm.

  7. Fractional Modeling of the AC Large-Signal Frequency Response in Magnetoresistive Current Sensors

    Directory of Open Access Journals (Sweden)

    Sergio Iván Ravelo Arias

    2013-12-01

    Full Text Available Fractional calculus is considered when derivatives and integrals of non-integer order are applied over a specific function. In the electrical and electronic domain, the transfer function dependence of a fractional filter not only by the filter order n, but additionally, of the fractional order α is an example of a great number of systems where its input-output behavior could be more exactly modeled by a fractional behavior. Following this aim, the present work shows the experimental ac large-signal frequency response of a family of electrical current sensors based in different spintronic conduction mechanisms. Using an ac characterization set-up the sensor transimpedance function  is obtained considering it as the relationship between sensor output voltage and input sensing current,[PLEASE CHECK FORMULA IN THE PDF]. The study has been extended to various magnetoresistance sensors based in different technologies like anisotropic magnetoresistance (AMR, giant magnetoresistance (GMR, spin-valve (GMR-SV and tunnel magnetoresistance (TMR. The resulting modeling shows two predominant behaviors, the low-pass and the inverse low-pass with fractional index different from the classical integer response. The TMR technology with internal magnetization offers the best dynamic and sensitivity properties opening the way to develop actual industrial applications.

  8. Transverse magnetoresistance induced by electron-surface scattering on thin gold films: Experiment and theory

    Energy Technology Data Exchange (ETDEWEB)

    Oyarzún, Simón [Institut Lumière Matière, UMR5306 Université Lyon 1-CNRS, Université de Lyon, 69622 Villeurbanne CEDEX (France); Henríquez, Ricardo [Departamento de Física, Universidad Técnica Federico Santa María, Av. España 1680, Casilla 110-V, Valparaíso (Chile); Suárez, Marco Antonio; Moraga, Luis [Departamento de Física, Facultad de Ciencias Físicas y Matemáticas, Universidad de Chile, Blanco Encalada 2008, Casilla 487-3, Santiago 8370449 (Chile); Kremer, Germán [Bachillerato, Facultad de Ciencias, Universidad de Chile, Las Palmeras 3425, Santiago 7800024 (Chile); Munoz, Raúl C., E-mail: ramunoz@ing.uchile.cl [Departamento de Física, Facultad de Ciencias Físicas y Matemáticas, Universidad de Chile, Blanco Encalada 2008, Casilla 487-3, Santiago 8370449 (Chile)

    2014-01-15

    We report new experimental data regarding the transverse magnetoresistance measured in a family of thin gold films of different thickness with the electric field E oriented perpendicular to the magnetic field B (both fields contained within the plane of the film), as well as a theoretical description of size effects based upon a solution of Boltzmann Transport Equation. The measurements were performed at low temperatures T (4 K ≤ T ≤ 50 K) under magnetic field strengths B (1.5 T ≤ B ≤ 9 T). The magnetoresistance signal can be univocally identified as arising from electron-surface scattering, for the Hall mobility at 4 K depends linearly on film thickness. The magnetoresistance signal exhibits a marked thickness dependence, and its curvature as a function of magnetic field B varies with film thickness. The theoretical description of the magnetic field dependence of the magnetoresistance requires a Hall field that varies with the thickness of the film; this Hall field is tuned to reproduce the experimental data.

  9. Mobility controlled linear magnetoresistance with 3D anisotropy in a layered graphene pallet

    Science.gov (United States)

    Zhang, Qiang; Li, Peng; He, Xin; Li, Jun; Wen, Yan; Ren, Wencai; Cheng, Hui-ming; Yang, Yang; Al-Hadeethi, Yas F.; Zhang, Xixiang

    2016-10-01

    A bulk sample of pressed graphene sheets was prepared under hydraulic pressure (~150 MPa). The cross-section of the sample demonstrates a layered structure, which leads to 3D electrical transport properties with anisotropic mobility. The electrical transport properties of the sample were measured over a wide temperature (2-400 K) and magnetic field (-140 ~\\text{kOe}≤slant H≤slant 140 ~\\text{kOe} ) range. The magnetoresistance measured at a fixed temperature can be described by R≤ft(H,θ \\right)=R≤ft({{\\varepsilon}θ}H,0\\right) with {{\\varepsilon}θ}={≤ft({{\\cos}2}θ +{{γ-2}{{\\sin}2}θ \\right)}1/2} , where γ is the mobility anisotropy constant and θ is the angle between the normal of the sample plane and the magnetic field. The large linear magnetoresistance (up to 36.9% at 400 K and 140 kOe) observed at high fields is ascribed to a classical magnetoresistance caused by mobility fluctuation ( Δ μ ). The magnetoresistance value at 140 kOe was related to the average mobility ≤ft( \\right) because of the condition Δ μ . The carrier concentration remained constant and the temperature-dependent resistivity was proportional to the average mobility, as verified by Kohler’s rule. Anisotropic dephasing length was deduced from weak localization observed at low temperatures.

  10. Magnetic and magnetoresistive properties of half-metallic ferromagnetic and charge ordered modified ferromagnetic manganite nanoparticles

    Science.gov (United States)

    Das, Kalipada; Das, I.

    2017-03-01

    In our present study, we address in detail magnetic and magneto-transport properties of well known half metallic La0.67Sr0.33MnO3 (LSMO) and charge order suppressed ferromagnetic La0.48Ca0.52MnO3 (LCMO) nanoparticles. The average particle size for LSMO and LCMO is ˜20 nm and ˜25 nm, respectively. With respect to their magnetic properties, both compounds exhibit ferromagnetic behavior, whereas they markedly differ in their magneto-transport characteristics. The magnetoresistive properties of LSMO nanoparticles indicate low field magnetoresistance and tendency for saturation at higher field values. In addition to the sharp low field magnetoresistance, we have achieved significantly large magnetoresistance at higher values of external magnetic field for the ferromagnetic LCMO nanoparticles. To address such anomalous behavior in these two different classes of ferromagnetic materials, we introduce the re-entrant core-shell type structure formation in charge ordered nanoparticles (LCMO) when charge ordering is completely suppressed.

  11. Sources of negative tunneling magnetoresistance in multilevel quantum dots with ferromagnetic contacts

    DEFF Research Database (Denmark)

    Koller, Sonja; Grifoni, Milena; Paaske, Jens

    2012-01-01

    We analyze distinct sources of spin-dependent energy level shifts and their impact on the tunneling magnetoresistance (TMR) of interacting quantum dots coupled to collinearly polarized ferromagnetic leads. Level shifts due to virtual charge fluctuations can be quantitatively evaluated within...

  12. Tunnelling magnetoresistance and 1/f noise in phase-separated manganites

    CERN Document Server

    Sboychakov, A O; Kugel, K I; Kagan, M Y; Brodsky, I V

    2003-01-01

    The magnetoresistance and the noise power of non-metallic phase-separated manganites are studied. The material is modelled by a system of small ferromagnetic metallic droplets (magnetic polarons or ferrons) in an insulating matrix. The concentration of metallic phase is assumed to be far from the percolation threshold. The electron tunnelling between ferrons causes the charge transfer in such a system. The magnetoresistance is determined both by the increase in the volume of the metallic phase and by the change in the electron hopping probability. In the framework of such a model, the low-field magnetoresistance is proportional to H sup 2 and decreases with temperature as T sup - sup n , where n can vary from 1 to 5, depending on the parameters of the system. In the high-field limit, the tunnelling magnetoresistance grows exponentially. Different mechanisms of the voltage fluctuations in the system are analysed. The noise spectrum generated by the fluctuations of the number of droplets with extra electrons ha...

  13. Hybrid Molecular and Spin Dynamics Simulations for Ensembles of Magnetic Nanoparticles for Magnetoresistive Systems

    Directory of Open Access Journals (Sweden)

    Lisa Teich

    2015-11-01

    Full Text Available The development of magnetoresistive sensors based on magnetic nanoparticles which are immersed in conductive gel matrices requires detailed information about the corresponding magnetoresistive properties in order to obtain optimal sensor sensitivities. Here, crucial parameters are the particle concentration, the viscosity of the gel matrix and the particle structure. Experimentally, it is not possible to obtain detailed information about the magnetic microstructure, i.e., orientations of the magnetic moments of the particles that define the magnetoresistive properties, however, by using numerical simulations one can study the magnetic microstructure theoretically, although this requires performing classical spin dynamics and molecular dynamics simulations simultaneously. Here, we present such an approach which allows us to calculate the orientation and the trajectory of every single magnetic nanoparticle. This enables us to study not only the static magnetic microstructure, but also the dynamics of the structuring process in the gel matrix itself. With our hybrid approach, arbitrary sensor configurations can be investigated and their magnetoresistive properties can be optimized.

  14. The many facets of tunneling magnetoresistance in Sr_2FeMoO_6

    Science.gov (United States)

    Nag, Abhishek; Jana, Somnath; Middey, Srimanta; Ray, Sugata

    2017-08-01

    The nature and shape of the magnetoresistance versus magnetic field responses of polycrystalline Sr_2FeMoO_6 has been a matter of intense debate. Other than the conventional intergranular tunneling magnetoresistance with nonmagnetic grain boundaries as tunnel barriers, intragranular contributions due to the presence of magnetic anti-phase boundaries as barriers and magnetically frustrated grain surface barriers giving rise to spin-valve-type magnetoresistance also turn out to be important. We find that each of these descriptions are partially true, while it is the physical state of the sample resulting from different sample synthesis and treatment conditions that defines the relative contributions of different mechanisms. It is also shown that a purely conventional intergranular TMR response can be realized only when small grain, well ordered pellets are annealed at or above 1500°C. Low temperature annealing of already highly ordered samples lead to formation of SrMoO_4 patches which further modify the magnetoresistance of this material. The dissolution of this phase takes place only after annealing above 1100°C which leads to the enhancement in the moment and ordering of the sample.

  15. Defect analysis in fast electron irradiated silicon by Hall and magnetoresistivity means

    Energy Technology Data Exchange (ETDEWEB)

    Mekys, Algirdas; Rumbauskas, Vytautas; Storasta, Jurgis [Institute of Materials Science and Applied Research, Vilnius University, Saulėtekio 9, LT-10222 Vilnius (Lithuania); Makarenko, Leonid [Byelorussian State University, BY-240040 Minsk (Belarus); Vaitkus, Juozas Vidmantis [Institute of Materials Science and Applied Research, Vilnius University, Saulėtekio 9, LT-10222 Vilnius (Lithuania)

    2014-11-01

    Two sets of p- and n-conductivity type silicon samples have been irradiated by 6.6 MeV electrons with fluence from 1 to 5 (×10{sup 16}) e/cm{sup 2}. Hall and magnetoresistivity measurement techniques were used to determine irradiation induced changes. The point defect coalescence was assumed to describe the behavior of the electrical parameters.

  16. Thermal resistance investigation of the giant magnetoresistance thin layers by the PTD technique

    Directory of Open Access Journals (Sweden)

    Yacoubi N.

    2012-06-01

    Full Text Available In this paper, we present a thermal properties investigation of giant magnetoresistance Mn/Fe layers as a function of Mn thickness using the Photothermal Deflexion Technique (PTD. We observe that the thermal resistance reaches its maximum for a Mn critical thickness corresponding to the antiparallel ferromagnetic coupling.

  17. Giant magnetoresistance in melt spun Cu85Co10Ni5

    DEFF Research Database (Denmark)

    Curiotto, Stefano; Johnson, Erik; Celegato, Federica;

    2009-01-01

    structure with annealing has been studied by X-ray diffraction. The. ne microstructure has been observed by TEM and related to the magnetic properties, investigated in a vibrating sample magnetometer. In the studied composition the magnetoresistance was found to be lower than in binary CuCo alloys without...

  18. Structural, Magnetic and Magnetoresistive Properties of Ternary Film Ni-Fe-Co Alloy

    Directory of Open Access Journals (Sweden)

    Ia.M. Lytvynenko

    2014-06-01

    Full Text Available The results of the experimental studies of the structural and phase state, magnetic and magnetoresistive properties of thin films of Ni-Fe-Co alloy with the initial concentration of components сNi  40, сFe  10, and сCo  50 at.% in the annealing temperature range of Тa  300-1000 K are presented. It is shown that as-deposited alloy films have a two-phase structure fcc-Ni3Fe + hcp-Co. The fcc-phase with the lattice parameter of 0,354 nm, which corresponds to Ni-Fe-Co solid solution, is observed after heat treatment at 900 K. Thin films based on Ni-Fe and Co exhibit anisotropic magnetoresistance with the highest value (0,35% observed in the perpendicular measurement geometry. The value of magnetoresistance tends to rise with increasing annealing temperature. The results of the magnetic and magnetoresistive measurements indicate the presence of the easy axis of magnetization in plane of the sample.

  19. Anomalous Nernst and anisotropic magnetoresistive heating in a lateral spin valve

    NARCIS (Netherlands)

    Slachter, Abraham; Bakker, Frank Lennart; van Wees, Bart Jan

    2011-01-01

    We measured the anomalous Nernst effect and anisotropic magnetoresistive heating in a lateral multiterminal permalloy/copper spin valve using all-electrical lock-in measurements. To interpret the results, a threedimensional thermoelectric finite-element model is developed. Using this model, we extra

  20. NbSe{sub 3}: Fermi surface and magnetoresistance under uniaxial stress

    Energy Technology Data Exchange (ETDEWEB)

    Tessema, G.X.; Gamble, B.K.; Kuh, J.; Skove, M.J. [Clemson Univ., SC (United States); Lacerda, A.H.; Bennett, M. [Clemson Univ., SC (United States); NHMFL, Los Alamos National Lab. (United States)

    1999-12-01

    The Fermi surface of NbSe{sub 3} below the two CDW transitions is still not very clear. Large magnetoresistance and giant quantum oscillations have been seen at low temperature below the second CDW transition. The SdH oscillations are attributed to one or several small pieces of electron or hole pockets spared by the two CDW transitions at 145 and 59 K. In a previous low field study ({mu}{sub 0}H<8 T) of the transverse magnetoresistance (H in the (b,c) plane) we have shown that the extremal area of one of these pockets decreases linearly with strain, {epsilon}, vanishing at {epsilon} = 2.5%. Here we extend our study into the high magnetic field regime (pulsed 60 T) and investigate the effect of uniaxial stress on the magnetoresistance (I//H). Our high field study is consistent with the fermiology study and shows that uniaxial stress leads to the obliteration of a small closed pocket. Above 1% strain the magnetoresistance is linear with H with no sign of saturation. (orig.)

  1. Tunneling magnetoresistance sensor with pT level 1/f magnetic noise

    Directory of Open Access Journals (Sweden)

    James G. Deak

    2017-05-01

    Full Text Available Magnetoresistive devices are important components in a large number of commercial electronic products in a wide range of applications including industrial position sensors, automotive sensors, hard disk read heads, cell phone compasses, and solid state memories. These devices are commonly based on anisotropic magnetoresistance (AMR and giant magnetoresistance (GMR, but over the past few years tunneling magnetoresistance (TMR has been emerging in more applications. Here we focus on recent work that has enabled the development of TMR magnetic field sensors with 1/f noise of less than 100 pT/rtHz at 1 Hz. Of the commercially available sensors, the lowest noise devices have typically been AMR, but they generally have the largest die size. Based on this observation and modeling of experimental data size and geometry dependence, we find that there is an optimal design rule that produces minimum 1/f noise. This design rule requires maximizing the areal coverage of an on-chip flux concentrator, providing it with a minimum possible total gap width, and tightly packing the gaps with MTJ elements, which increases the effective volume and decreases the saturation field of the MTJ freelayers. When properly optimized using this rule, these sensors have noise below 60 pT/rtHz, and could possibly replace fluxgate magnetometers in some applications.

  2. Tunneling magnetoresistance sensor with pT level 1/f magnetic noise

    Science.gov (United States)

    Deak, James G.; Zhou, Zhimin; Shen, Weifeng

    2017-05-01

    Magnetoresistive devices are important components in a large number of commercial electronic products in a wide range of applications including industrial position sensors, automotive sensors, hard disk read heads, cell phone compasses, and solid state memories. These devices are commonly based on anisotropic magnetoresistance (AMR) and giant magnetoresistance (GMR), but over the past few years tunneling magnetoresistance (TMR) has been emerging in more applications. Here we focus on recent work that has enabled the development of TMR magnetic field sensors with 1/f noise of less than 100 pT/rtHz at 1 Hz. Of the commercially available sensors, the lowest noise devices have typically been AMR, but they generally have the largest die size. Based on this observation and modeling of experimental data size and geometry dependence, we find that there is an optimal design rule that produces minimum 1/f noise. This design rule requires maximizing the areal coverage of an on-chip flux concentrator, providing it with a minimum possible total gap width, and tightly packing the gaps with MTJ elements, which increases the effective volume and decreases the saturation field of the MTJ freelayers. When properly optimized using this rule, these sensors have noise below 60 pT/rtHz, and could possibly replace fluxgate magnetometers in some applications.

  3. Mobility controlled linear magnetoresistance with 3D anisotropy in a layered graphene pallet

    KAUST Repository

    Zhang, Qiang

    2016-09-27

    A bulk sample of pressed graphene sheets was prepared under hydraulic pressure (similar to 150 MPa). The cross-section of the sample demonstrates a layered structure, which leads to 3D electrical transport properties with anisotropic mobility. The electrical transport properties of the sample were measured over a wide temperature (2-400 K) and magnetic field (-140 kOe <= H <= 140 kOe) range. The magnetoresistance measured at a fixed temperature can be described by R(H, theta) = R(epsilon H-theta, 0) with epsilon(theta) =(cos(2)theta + gamma(-2) sin(2)theta)(1/2), where gamma is the mobility anisotropy constant and theta is the angle between the normal of the sample plane and the magnetic field. The large linear magnetoresistance (up to 36.9% at 400 K and 140 kOe) observed at high fields is ascribed to a classical magnetoresistance caused by mobility fluctuation (Delta mu). The magnetoresistance value at 140 kOe was related to the average mobility () because of the condition Delta mu < . The carrier concentration remained constant and the temperature-dependent resistivity was proportional to the average mobility, as verified by Kohler\\'s rule. Anisotropic dephasing length was deduced from weak localization observed at low temperatures.

  4. Food deprivation facilitates reinstatement of morphine-induced conditioned place preference: Role of intra-accumbal dopamine D2-like receptors in associating reinstatement of morphine CPP with stress.

    Science.gov (United States)

    Sadeghzadeh, Fatemeh; Babapour, Vahab; Haghparast, Abbas

    2017-04-01

    The high rate of relapse to drug use is one of the main problems in the treatment of addiction. Stress plays the essential role in drug abuse and relapse; nevertheless, little is known about the mechanisms underlying stress and relapse. Accordingly, the effects of intra-accumbal administration of Sulpiride, as a dopamine D2-like receptor antagonist, on an ineffective morphine dose + food deprivation(FD)- and morphine priming-induced reinstatement of conditioned place preference (CPP). About 104 adult male albino Wistar rats weighing 200-280 g were bilaterally implanted by cannula into the nucleus accumbens (NAc). Subcutaneous (sc) injection of morphine (5 mg kg(-1) ) was used daily during a 3-day conditioning phase. After a 24-hr "off" period following achievement of extinction criterion, rats were tested for FD- and priming-induced reinstatement of morphine CPP by an ineffective (0.5 mg kg(-1) , sc) and priming (1 mg kg(-1) , sc) dose of morphine, respectively. In the next experiments, animals received different doses of intra-accumbal Sulpiride (0.25, 1, and 4 µg/0.5 µL saline) bilaterally and were subsequently tested for morphine reinstatement. Our findings indicated that the 24-hr FD facilitated reinstatement of morphine CPP. Furthermore, the D2-like receptor antagonist attenuated the ineffective morphine dose+ FD- and priming-induced reinstatement of morphine CPP dose-dependently. Also, contribution of D2-like receptors in mediation of the ineffective morphine dose+ FD-induced reinstatement of CPP was greater than morphine priming-induced reinstatement of CPP. The role of dopaminergic system in morphine reinstatement through a neural pathway in the NAc provides the evidence that D2-like receptor antagonist can be useful therapeutic targets for reinstatement of morphine CPP. © 2016 Wiley Periodicals, Inc.

  5. Effects of casein phosphopeptide-amorphous calcium phosphate (CPP-ACP and fluoride on the microhardness of enamel treated with a bleaching agent: ex vivo

    Directory of Open Access Journals (Sweden)

    Mügem Aslı Gürel Ekici

    2017-05-01

    Full Text Available Objective: The aim of this study was to compare the effects of casein phosphopeptide-amorphous calcium phosphate (CPP-ACP and 1.23% acidulated phosphate fluoride (APF; pH 3.5 on the microhardness of enamel treated with a bleaching agent. Materials and Method: Enamel slices (n=32; 2×4 mm were obtained from 8 mandibular permanent molar teeth. Specimens were embedded into acrylic resin blocks with the enamel surfaces facing upwards. Vickers microhardness (VHN values of the specimens were recorded at baseline. The specimens were randomly divided into 4 experimental groups, and the experimental designation was as follows: Group 1: no treatment (control, Group 2: 35% hydrogen peroxide (HP, Group 3: HP + CPP-ACP, Group 4: HP + APF application. After treatments, VHN values were measured and recorded again. Specimens were stored in artificial saliva at 37 °C for 1 week. After 1 week second application was done and VHN of the specimens was registered once more. Data were statistically analyzed with ANOVA and Tukey post hoc tests. Values obtained at baseline, and first and second applications were compared using paired samples t-test (α=0.05. Results: In inter-group comparisons, no statistically significant difference in the enamel microhardness values was found between the baseline, and first and second applications (p>0.05. In intra-group comparisons, again, no statistically significant difference in the enamel microhardness values was found between the baseline, and first and second applications (p>0.05. Conclusion: According to the limitations of this study it can be concluded that neither the HP application nor the CPP-ACP or APF application after HP had any significant effect on the enamel microhardness.

  6. Tunable electron heating induced giant magnetoresistance in the high mobility GaAs/AlGaAs 2D electron system

    Science.gov (United States)

    Wang, Zhuo; Samaraweera, R. L.; Reichl, C.; Wegscheider, W.; Mani, R. G.

    2016-12-01

    Electron-heating induced by a tunable, supplementary dc-current (Idc) helps to vary the observed magnetoresistance in the high mobility GaAs/AlGaAs 2D electron system. The magnetoresistance at B = 0.3 T is shown to progressively change from positive to negative with increasing Idc, yielding negative giant-magnetoresistance at the lowest temperature and highest Idc. A two-term Drude model successfully fits the data at all Idc and T. The results indicate that carrier heating modifies a conductivity correction σ1, which undergoes sign reversal from positive to negative with increasing Idc, and this is responsible for the observed crossover from positive- to negative- magnetoresistance, respectively, at the highest B.

  7. Specific features of magnetoresistance during the antiferromagnet—paramagnet transition in Tm1 - x Yb x B12

    Science.gov (United States)

    Sluchanko, N. E.; Azarevich, A. N.; Bogach, A. V.; Glushkov, V. V.; Demishev, S. V.; Levchenko, A. V.; Filippov, V. B.; Shitsevalova, N. Yu.

    2013-05-01

    The transverse magnetoresistance Δρ/ρ( H, T) of Tm1 - x Yb x B12 single crystals is studied in the ytterbium concentration range corresponding to the antiferromagnet-paramagnet transition in a magnetic field up to 80 kOe at low temperatures. A magnetic H- T phase diagram is constructed for the antiferromagnetic state of substitutional Tm1 - x Yb x B12 solid solutions with x ≤ 0.1. The contributions to the magnetoresistance in the antiferromagnetic and paramagnetic phases of the dodecaborides under study are separated. Along with negative quadratic magnetoresistance -Δρ/ρ ∝ H 2, the magnetically ordered phase of these compounds is found to have component Δρ/ρ ∝ H that linearly changes in a magnetic field. The negative contribution to the magnetoresistance of Tm1 - x Yb x B12 is analyzed in terms of the Yosida model for a local magnetic susceptibility.

  8. A study of inelastic electron-phonon interactions on tunneling magnetoresistance of a nano-scale device

    Energy Technology Data Exchange (ETDEWEB)

    Modarresi, M., E-mail: mo_mo226@stu-mail.um.ac.i [Department of Physics, Ferdowsi University of Mashhad, Mashhad (Iran, Islamic Republic of); Roknabadi, M.R.; Shahtahmasbi, N.; Vahedi Fakhrabad, D.; Arabshahi, H. [Department of Physics, Ferdowsi University of Mashhad, Mashhad (Iran, Islamic Republic of)

    2011-02-01

    In this research, we have studied the effect of inelastic electron-phonon interactions on current-voltage characteristic and tunneling magnetoresistance of a polythiophene molecule that is sandwiched between two cobalt electrodes using modified Green's function method as proposed by Walczak. The molecule is described with a modified Su-Schrieffer-Heeger Hamiltonian. The ground state of the molecule is obtained by Hellman-Feynman theorem. Electrodes are described in the wide-band approximation and spin-flip is neglected during conduction. Our calculation results show that with increase in voltage the currents increase and tunneling magnetoresistance decreases. Change in tunneling magnetoresistance due to inelastic interactions is limited in a small bias voltage interval and can be neglected in the other bias voltages. -- Research Highlights: {yields}We investigate the effect of inelastic interaction on transport properties. {yields}Due to inelastic interactions tunneling magnetoresistance decreases. {yields}Decrease in TMR is restricted in a small voltage interval.

  9. Behavioural effects of rapid intravenous administration of meta-chlorophenylpiperazine (m-CPP) in patients with generalized social anxiety disorder, panic disorder and healthy controls.

    Science.gov (United States)

    Van Veen, J F; Van der Wee, N J A; Fiselier, J; Van Vliet, I M; Westenberg, H G M

    2007-10-01

    Findings from epidemiological, pharmacotherapeutical, genetic and neurobiological studies suggest a possible overlap in the neurobiology of generalized social anxiety disorder (gSAD) and panic disorder (PD). Previously we have found a rapid intravenous m-CPP challenge of 0.1 mg/kg to be highly sensitive and selective in the provocation of panic attacks in patients with PD. We therefore directly compared the behavioural, neuroendocrine and physiological effects of this rapid m-CPP challenge in a small sample of patients with gSAD, patients with PD and matched healthy controls. Panic attacks were significantly more provoked in patients with PD (85%), but not in patients with gSAD (14%) as compared to healthy controls (0%). Effects on the other behavioural parameters, but not on the neuroendocrine and physiological parameters, were significantly greater in patients with PD compared to patients with gSAD and controls. Our preliminary data do not support a shared neurobiology of gSAD and PD.

  10. Comparing the Effects of Whey Extract and Case in Phosphopeptide Amor-phous Calcium Phosphate (CPP-ACP on Enamel Microhardness

    Directory of Open Access Journals (Sweden)

    Mohammad Bagher Rezvani

    2015-03-01

    Full Text Available Statement of the Problem: With the recent focus of researches on the development of non-invasive treatment modalities, the non-invasive treatment of early carious lesions by remineralization would bring a major advance in the clinical management of these dental defects. Casein phosphopeptide-amorphous calcium phosphate (CPP-ACP is considered to be effective in tooth remineralization. Purpose: The aim of this in-vitro study was to compare the effects of whey and CPP-ACP in increasing the enamel microhardness. Materials and Method: Microhardness of 30 sound human permanent premolars was measured before and after 8-minute immersion of samples in Coca-Cola. The teeth were then randomly divided into 3 groups and were immersed in artificial saliva, whey, and tooth mousse for 10 minutes. The changes of microhardness within each group and among the groups were recorded and analyzed using paired t-test. Results: The microhardness increased in each group and between the groups; this increase was statistically significant (p= 0.009. Conclusion: The effect of whey on increasing the enamel microhardness was more than that of tooth mousse.

  11. Estudo in vitro da eficácia anticárie do creme à base do complexo de fosfopeptídeo de caseína (CPP) : fosfato de cálcio amorfo (ACP) em dentes humanos

    OpenAIRE

    2012-01-01

    Introdução: O CPP-ACP já tem demonstrado seu potencial anticárie em estudos in vitro, in situ e in vivo, entretanto notam-se alguns resultados divergentes. Além disso, nem sempre o complexo é comparado e/ou associado ao F, terapia padrão utilizada no controle da cárie. Dentre os estudos que avaliam a eficácia do CPP-ACP, a maioria estuda o seu potencial remineralizador e não a sua capacidade em inibir o processo de desmineralização em lesões iniciais. Objetivo: Avaliar o papel do CPP-...

  12. Transition of Magnetoresistance in Co/Alq3 Granular Film on Silicon Substrate

    Institute of Scientific and Technical Information of China (English)

    SHU Qi; ZHAO Xiao-Meng; ZHANG Yan; SHENG Peng; TANG Zhen-Yao; NI Gang

    2009-01-01

    A Co0.38 (Alq3)0.62 granular film is prepared using a co-evaporating technique on a silicon substrate with a native oxide layer. A crossover of magnetoresistance (MR) from positive to negative is observed. The positive MR ratio reaches 17.5% at room temperature (H = 50 kOe), and the negative MR ratio reaches -1.35% at 15K (H = 10 kOe). Furthermore, a metal-insulator transition is also observed. The transition of resistance and MR results from the channel switching of electron transport between the upper Co-Alq3 granular film and the inversion layer underneath. The negative MR originates from the tunneling magnetoresistance effect due to the tunneling conducting between adjacent Co granules, and the positive MR may be attributed to the transport of high mobility carriers in the SiO2/Si inversion layer.

  13. Positive magnetoresistance in Co40Fe40B20/SiO2/Si heterostructure

    KAUST Repository

    Zhang, Y.

    2016-07-20

    Current-perpendicular-to-plane electronic transport properties and magnetoresistance of amorphous Co40Fe40B20/SiO2/Si heterostructures are investigated systematically. A backward diode-like rectifying behavior was observed due to the formation of a Schottky barrier between Co40Fe40B20 and Si. The junction resistance shows a metal-insulator transition with decreasing temperature in both the forward and reverse ranges. A large positive magnetoresistance (MR) of ∼2300% appears at 200 K. The positive MR can be attributed to the magnetic-field-controlled impact ionization process of carriers. MR shows a temperature-peak-type character under a constant bias current, which is related to the spin-dependent barrier in the Si near the interface. © CopyrightEPLA, 2016.

  14. Disclosing the origin of the reduced magnetoresistance in electron-doped double perovskites

    Energy Technology Data Exchange (ETDEWEB)

    Rubi, D; Fontcuberta, J [Institut de Ciencia de Materials de Barcelona, Consejo Superior de Investigaciones CientIficas, Campus UAB, E08198, Bellaterra (Spain)

    2006-08-30

    Electron doping in A{sub 2-x}L{sub x}FeMoO{sub 6} (where L is a trivalent lanthanide and A is a divalent cation) double perovskites has been established as a suitable technique for increasing their Curie temperature. However, it was found that the magnetoresistance gradually decreases with increasing lanthanide substitution. Here we analyse in detail the magnetoresistance as a function of the magnetic field for several series of ceramic A{sub 2-x}L{sub x}FeMoO{sub 6} oxides, showing that the data can be well described by assuming a gradual loss of spin polarization of the conduction band upon electron doping. This observation introduces some constraints to models of ferromagnetic coupling in double perovskites.

  15. Investigation of the tunnel magnetoresistance in junctions with a strontium stannate barrier

    Science.gov (United States)

    Althammer, Matthias; Vikam Singh, Amit; Keshavarz, Sahar; Kenan Yurtisigi, Mehmet; Mishra, Rohan; Borisevich, Albina Y.; LeClair, Patrick; Gupta, Arunava

    2016-12-01

    We experimentally investigate the structural, magnetic, and electrical transport properties of La0.67 Sr0.33 MnO3 based magnetic tunnel junctions with a SrSnO3 barrier. Our results show that despite the high density of defects in the strontium stannate barrier, due to the large lattice mismatch, the observed tunnel magnetoresistance (TMR) is comparable to tunnel junctions with a better lattice matched SrTiO3 barrier, reaching values of up to 350 % at T =5 K . Further analysis of the current-voltage characteristics of the junction and the bias voltage dependence of the observed tunnel magnetoresistance show a decrease of the TMR with increasing bias voltage. In addition, the observed TMR vanishes for T >200 K . Our results suggest that by employing a better lattice matched ferromagnetic electrode, and thus reducing the structural defects in the strontium stannate barrier, even larger TMR ratios might be possible in the future.

  16. Correlation between the Magnetoresistance, IR Magnetoreflectance, and Spin-Dependent Characteristics of Multilayer Magnetic Films

    Directory of Open Access Journals (Sweden)

    V. G. Kravets

    2012-01-01

    Full Text Available We present the experimental results on magnetorefractive effect (MRE in ferromagnetic metal-metal and metal-insulator multilayer films of different composition and different type of magnetoresistive effects. The shape and magnitude of the MRE dependences are found to be very sensitive to the spin-dependent scattering parameters and the effective polarization of the electron density of state around the Fermi level. A study of an MRE in multilayered films is shown to be sufficient for direct extracting of the spin-dependent relaxation times of electron (for GMR-like samples and energy dependence of the tunnel spin-polarization density of states near the Fermi level for layered TMR films. It is proposed to use the magnetorefractive effect as a noncontact probe of magnetoresistive effects in thin magnetic films through investigations of the field-dependent reflection behaviors of multilayered films in the IR region.

  17. The magnetic ordering in high magnetoresistance Mn-doped ZnO thin films

    KAUST Repository

    Venkatesh, S.

    2016-03-24

    We studied the nature of magnetic ordering in Mn-doped ZnO thin films that exhibited ferromagnetism at 300 K and superparamagnetism at 5 K. We directly inter-related the magnetisation and magnetoresistance by invoking the polaronpercolation theory and variable range of hopping conduction below the metal-to-insulator transition. By obtaining a qualitative agreement between these two models, we attribute the ferromagnetism to the s-d exchange-induced spin splitting that was indicated by large positive magnetoresistance (∼40 %). Low temperature superparamagnetism was attributed to the localization of carriers and non-interacting polaron clusters. This analysis can assist in understanding the presence or absence of ferromagnetism in doped/un-doped ZnO.

  18. Large positive in-plane magnetoresistance induced by localized states at nanodomain boundaries in graphene

    Science.gov (United States)

    Wu, Han-Chun; Chaika, Alexander N.; Hsu, Ming-Chien; Huang, Tsung-Wei; Abid, Mourad; Abid, Mohamed; Aristov, Victor Yu; Molodtsova, Olga V.; Babenkov, Sergey V.; Niu, Yuran; Murphy, Barry E.; Krasnikov, Sergey A.; Lübben, Olaf; Liu, Huajun; Chun, Byong Sun; Janabi, Yahya T.; Molotkov, Sergei N.; Shvets, Igor V.; Lichtenstein, Alexander I.; Katsnelson, Mikhail I.; Chang, Ching-Ray

    2017-02-01

    Graphene supports long spin lifetimes and long diffusion lengths at room temperature, making it highly promising for spintronics. However, making graphene magnetic remains a principal challenge despite the many proposed solutions. Among these, graphene with zig-zag edges and ripples are the most promising candidates, as zig-zag edges are predicted to host spin-polarized electronic states, and spin-orbit coupling can be induced by ripples. Here we investigate the magnetoresistance of graphene grown on technologically relevant SiC/Si(001) wafers, where inherent nanodomain boundaries sandwich zig-zag structures between adjacent ripples of large curvature. Localized states at the nanodomain boundaries result in an unprecedented positive in-plane magnetoresistance with a strong temperature dependence. Our work may offer a tantalizing way to add the spin degree of freedom to graphene.

  19. A giant magnetoresistance ring-sensor based microsystem for magnetic bead manipulation and detection

    KAUST Repository

    Gooneratne, Chinthaka P.

    2011-03-28

    In this paper a novel spin valvegiant magnetoresistance(GMR) ring-sensor integrated with a microstructure is proposed for concentrating, trapping, and detecting superparamagnetic beads (SPBs). Taking advantage of the fact that SPBs can be manipulated by an external magnetic field, a unique arrangement of conducting microrings is utilized to manipulate the SPBs toward the GMR sensing area in order to increase the reliability of detection. The microrings are arranged and activated in such a manner so as to enable the detection of minute concentrations of SPBs in a sample. Precise manipulation is achieved by applying current sequentially to the microrings. The fabricated ring-shaped GMR element is located underneath the innermost ring and has a magnetoresistance of approximately 5.9%. By the performed experiments it was shown that SPBs could be successfully manipulated toward the GMR sensing zone.

  20. Giant negative magnetoresistance induced by the chiral anomaly in individual Cd3As2 nanowires

    Science.gov (United States)

    Li, Cai-Zhen; Wang, Li-Xian; Liu, Haiwen; Wang, Jian; Liao, Zhi-Min; Yu, Da-Peng

    2015-12-01

    Dirac electronic materials beyond graphene and topological insulators have recently attracted considerable attention. Cd3As2 is a Dirac semimetal with linear dispersion along all three momentum directions and can be viewed as a three-dimensional analogue of graphene. By breaking of either time-reversal symmetry or spatial inversion symmetry, the Dirac semimetal is believed to transform into a Weyl semimetal with an exotic chiral anomaly effect, however the experimental evidence of the chiral anomaly is still missing in Cd3As2. Here we show a large negative magnetoresistance with magnitude of -63% at 60 K and -11% at 300 K in individual Cd3As2 nanowires. The negative magnetoresistance can be modulated by gate voltage and temperature through tuning the density of chiral states at the Fermi level and the inter-valley scatterings between Weyl nodes. The results give evidence of the chiral anomaly effect and are valuable for understanding the Weyl fermions in Dirac semimetals.

  1. Effects of temperature and electron effective mass on bias-dependent tunnelling magnetoresistance

    Institute of Scientific and Technical Information of China (English)

    Li Fei-Fei; Li Zheng-Zhong; Xiao Ming-Wen

    2005-01-01

    In this paper, we study the effects of temperature and electron effective mass within the barrier on the bias dependence and sign-change behaviour of the tunnelling magnetoresistance (TMR) in ferromagnetic junctions. A significant decrease of the tunnelling magnetoresistance with increasing temperature is obtained, in accordance with the experiments. In addition to the height of barrier potential (φ) discussed in our previous papers, the electron effective mass (mB) within the barrier region is found to be another important factor that physically controls the sign-change behaviour of the TMR. The critical voltage (Vc) at which TMR changes sign will increase with φ and decrease with mB. Furthermore, both the zero-bias TMR and Vc will decrease if the temperature rises. These results would be of practical use for experimental investigations.

  2. Magnetic and Magnetoresistive Properties of 3D Interconnected NiCo Nanowire Networks

    Science.gov (United States)

    da Câmara Santa Clara Gomes, Tristan; De La Torre Medina, Joaquín; Lemaitre, Matthieu; Piraux, Luc

    2016-10-01

    Track-etched polymer membranes with crossed nanochannels have been revealed to be most suitable as templates to produce large surface area and mechanically stable 3D interconnected nanowire (NW) networks by electrodeposition. Geometrically controlled NW superstructures made of NiCo ferromagnetic alloys exhibit appealing magnetoresistive properties. The combination of exact alloy compositions with the spatial arrangement of NWs in the 3D network is decisive to obtain specific magnetic and magneto-transport behavior. A proposed simple model based on topological aspects of the 3D NW networks is used to accurately determine the anisotropic magnetoresistance ratios. Despite of their complex topology, the microstructure of Co-rich NiCo NW networks display mixed fcc-hcp phases with the c-axis of the hcp phase oriented perpendicular to their axis. These interconnected NW networks have high potential as reliable and stable magnetic field sensors.

  3. Magneto-resistive property study of direct and indirect band gap thermoelectric Bi-Sb alloys

    Science.gov (United States)

    Das, Diptasikha; Malik, K.; Bandyopadhyay, S.; Das, D.; Chatterjee, S.; Banerjee, Aritra

    2014-08-01

    We report magneto-resistive properties of direct and indirect band gap Bismuth-Antimony (Bi-Sb) alloys. Band gap increases with magnetic field. Large positive magnetoresistance (MR) approaching to 400% is observed. Low field MR experiences quadratic growth and at high field it follows a nearly linear behavior without sign of saturation. Carrier mobility extracted from low field MR data depicts remarkable high value of around 5 m2V-1s-1. Correlation between MR and mobility is revealed. We demonstrate that the strong nearly linear MR at high field can be well understood by classical method, co-build by Parish and Littlewood, Nature 426, 162 (2003) and Phys. Rev. B 72, 094417 (2005).

  4. Thickness dependence of spin Hall magnetoresistance in FeMn/Pt bilayers

    Directory of Open Access Journals (Sweden)

    Yumeng Yang

    2016-06-01

    Full Text Available We investigated spin Hall magnetoresistance in FeMn/Pt bilayers, which was found to be one order of magnitude larger than that of heavy metal and insulating ferromagnet or antiferromagnet bilayer systems, and comparable to that of NiFe/Pt bilayers. The spin Hall magnetoresistance shows a non-monotonic dependence on the thicknesses of both FeMn and Pt. The former can be accounted for by the thickness dependence of net magnetization in FeMn thin films, whereas the latter is mainly due to spin accumulation and diffusion in Pt. Through analysis of the Pt thickness dependence, the spin Hall angle, spin diffusion length of Pt and the real part of spin mixing conductance were determined to be 0.2, 1.1 nm, and 5.5 × 1014 Ω−1m−2, respectively. The results corroborate the spin orbit torque effect observed in this system recently.

  5. Giant Positive Magnetoresistance in Grain-Oriented CxCo1-x Alloys

    Institute of Scientific and Technical Information of China (English)

    张栋杰

    2003-01-01

    The grain-oriented Cx Co1-x (x = 0.9, 0.5) samples were fabricated by the hot-pressing method. The microstructure was observed by an x-ray diffractometer and a scanning electron microscope. The resistance against the applied magnetic field was measured by a standard four-point probe method at different temperatures. The magnetoresistance and the magnetization ratio were studied as a function of magnetic field in the range of -1800 kA/m-1800kA/m at different temperatures from 50 K to 300 K. The magnetoresistance of grain-oriented Cx Co1-x is positive. The maximum positive MR of 98% at 50 K and 34% at 300 K was obtained under 1800 kA/m magnetic field in the C0.9Co0.1 sample.

  6. Exchange bias and bistable magneto-resistance states in amorphous TbFeCo thin films

    Energy Technology Data Exchange (ETDEWEB)

    Li, Xiaopu, E-mail: xl6ba@virginia.edu; Ma, Chung T.; Poon, S. Joseph, E-mail: sjp9x@virginia.edu [Department of Physics, University of Virginia, Charlottesville, Virginia 22904 (United States); Lu, Jiwei [Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904 (United States); Devaraj, Arun [Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory, Richland, Washington 99352 (United States); Spurgeon, Steven R.; Comes, Ryan B. [Physical and Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, Washington 99352 (United States)

    2016-01-04

    Amorphous TbFeCo thin films sputter deposited at room temperature on thermally oxidized Si substrate are found to exhibit strong perpendicular magnetic anisotropy. Atom probe tomography, scanning transmission electron microscopy, and energy dispersive X-ray spectroscopy mapping have revealed two nanoscale amorphous phases with different Tb atomic percentages distributed within the amorphous film. Exchange bias accompanied by bistable magneto-resistance states has been uncovered near room temperature by magnetization and magneto-transport measurements. The exchange anisotropy originates from the exchange interaction between the ferrimagnetic and ferromagnetic components corresponding to the two amorphous phases. This study provides a platform for exchange bias and magneto-resistance switching using single-layer amorphous ferrimagnetic thin films that require no epitaxial growth.

  7. Exchange bias and bistable magneto-resistance states in amorphous TbFeCo thin films

    Science.gov (United States)

    Li, Xiaopu; Ma, Chung T.; Lu, Jiwei; Devaraj, Arun; Spurgeon, Steven R.; Comes, Ryan B.; Poon, S. Joseph

    2016-01-01

    Amorphous TbFeCo thin films sputter deposited at room temperature on thermally oxidized Si substrate are found to exhibit strong perpendicular magnetic anisotropy. Atom probe tomography, scanning transmission electron microscopy, and energy dispersive X-ray spectroscopy mapping have revealed two nanoscale amorphous phases with different Tb atomic percentages distributed within the amorphous film. Exchange bias accompanied by bistable magneto-resistance states has been uncovered near room temperature by magnetization and magneto-transport measurements. The exchange anisotropy originates from the exchange interaction between the ferrimagnetic and ferromagnetic components corresponding to the two amorphous phases. This study provides a platform for exchange bias and magneto-resistance switching using single-layer amorphous ferrimagnetic thin films that require no epitaxial growth.

  8. Rapid detection of Escherichia coli O157:H7 using tunneling magnetoresistance biosensor

    Science.gov (United States)

    Wu, Yuanzhao; Liu, Yiwei; Zhan, Qingfeng; Liu, J. Ping; Li, Run-Wei

    2017-05-01

    A rapid method for the sensitive detection of bacteria using magnetic immunoassay, which are measured with a tunneling magnetoresistance (TMR) sensor, is described. For the measurement of Escherichia coli O157:H7 (E. coli O157:H7) bacteria, the target was labeled by magnetic beads through magnetic immunoassay. The magnetic beads produce a weak magnetic fringe field when external field is applied, thus induce the magnetoresistance change of TMR sensor. A detection limit of 100 CFU/mL E. coli O157:H7 bacteria in 5 hours was obtained. With its high sensitive and rapid detection scheme based on the TMR biosensor, the detection system is an excellent candidate suitable and promising for food safety and biomedical detection.

  9. Hall effect in the extremely large magnetoresistance semimetal WTe{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Luo, Yongkang, E-mail: ykluo@lanl.gov; Dai, Y. M.; Taylor, A. J.; Yarotski, D. A.; Prasankumar, R. P.; Thompson, J. D. [Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States); Li, H.; Miao, H.; Shi, Y. G. [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Science, Beijing 100190 (China); Ding, H. [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Science, Beijing 100190 (China); Collaborative Innovation Center of Quantum Matter, Beijing 100084 (China)

    2015-11-02

    We systematically measured the Hall effect in the extremely large magnetoresistance semimetal WTe{sub 2}. By carefully fitting the Hall resistivity to a two-band model, the temperature dependencies of the carrier density and mobility for both electron- and hole-type carriers were determined. We observed a sudden increase in the hole density below ∼160 K, which is likely associated with the temperature-induced Lifshitz transition reported by a previous photoemission study. In addition, a more pronounced reduction in electron density occurs below 50 K, giving rise to comparable electron and hole densities at low temperature. Our observations indicate a possible electronic structure change below 50 K, which might be the direct driving force of the electron-hole “compensation” and the extremely large magnetoresistance as well. Numerical simulations imply that this material is unlikely to be a perfectly compensated system.

  10. Magnetically induced nonvolatile magnetoresistance and resistance memory effect in phase-separated manganite thin films

    Science.gov (United States)

    Li, Qian; Cao, Qingqi; Wang, Dunhui; Du, Youwei

    2017-03-01

    We report the observation of magnetically induced resistance memory effect in a typical electronic phase-separated manganite La5/8‑x Pr x Ca3/8MnO3 (x  =  0.3) thin film. In the hysteresis region of metal-to-insulator transition, the resistance exhibits a sharp drop with the application of magnetic field and maintains the low resistance state after the removal of field, showing a nonvolatile magnetoresistance effect. The high resistance state can be recovered until the temperature is warmed. More explicit measurements at the hysteresis region exhibit the non-volatility and irreversibility of magnetoresistance, which can be ascribed to the percolative feature in the electronic phase-separated manganite. The origin and potential applications of these interesting effects are discussed.

  11. Low-frequency noise characterization of a magnetic field monitoring system using an anisotropic magnetoresistance

    CERN Document Server

    Mateos, I; Lobo, A

    2016-01-01

    A detailed study about magnetic sensing techniques based on anisotropic magnetoresistive sensors shows that the technology is suitable for low-frequency space applications like the eLISA mission. Low noise magnetic measurements at the sub-millihertz frequencies were taken by using different electronic noise reduction techniques in the signal conditioning circuit. We found that conventional modulation techniques reversing the sensor bridge excitation do not reduce the potential $1/f$ noise of the magnetoresistors, so alternative methods such as flipping and electro-magnetic feedback are necessary. In addition, a low-frequency noise analysis of the signal conditioning circuits has been performed in order to identify and minimize the different main contributions from the overall noise. The results for chip-scale magnetoresistances exhibit similar noise along the eLISA bandwidth ($0.1\\,{\\rm mHz}-1\\,{\\rm Hz}$) to the noise measured by means of the voluminous fluxgate magnetometers used in its precursor mission, kn...

  12. Magnetoresistivity plateau of graphene in proximity to superconducting NbSe2

    Science.gov (United States)

    Zhang, Xiaoqiang; Tao, Ran; Wei, Laiming; Xu, Jiangang; Liang, Haixing; Zhu, Lijun; Zhang, Yi; Wang, Naizhou; Chen, Xianhui; Zeng, Changgan

    2016-09-01

    The distribution and dynamic behavior of Abrikosov vortices in type-II superconductors could modulate the nearby magnetic field, thus enriching new physics in the proximal two-dimensional electron gas. Here we investigate the effects of vortex dynamics on the quantum transport properties of graphene in proximity to the superconducting single-crystalline NbSe2 thin flakes. Pronounced asymmetric magnetoresistivity plateaus emerge near zero field below the critical temperature of NbSe2, accompanied by hysteresis loops. In sharp contrast, only weak localization behavior is observed for graphene placed on SiO2/Si substrate. Such magnetoresistivity plateaus and hysteresis can be attributed to the vortex pinning effect at the edge defects of the single-crystalline NbSe2 flakes. Our findings may shed light on the realization of emergent states in the two-dimensional electron gases by manipulation of vortex dynamics and distribution in the proximal superconductors.

  13. Large magnetoresistance from long-range interface coupling in armchair graphene nanoribbon junctions

    Energy Technology Data Exchange (ETDEWEB)

    Li, Suchun [Department of Physics, Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, 2 Science Drive 3, Singapore 117551 (Singapore); Institute of High Performance Computing, Agency for Science, Technology and Research, 1 Fusionopolis Way, #16-16 Connexis, Singapore 138632 (Singapore); NUS Graduate School for Integrative Sciences and Engineering, National University of Singapore, 28 Medical Drive, Singapore 117456 (Singapore); Son, Young-Woo [Korea Institute for Advanced Study, Seoul 130-722 (Korea, Republic of); Quek, Su Ying, E-mail: phyqsy@nus.edu.sg [Department of Physics, Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, 2 Science Drive 3, Singapore 117551 (Singapore); Institute of High Performance Computing, Agency for Science, Technology and Research, 1 Fusionopolis Way, #16-16 Connexis, Singapore 138632 (Singapore)

    2014-12-15

    In recent years, bottom-up synthesis procedures have achieved significant advancements in atomically controlled growth of several-nanometer-long graphene nanoribbons with armchair-shaped edges (AGNRs). This greatly encourages us to explore the potential of such well-defined AGNRs in electronics and spintronics. Here, we propose an AGNR based spin valve architecture that induces a large magnetoresistance up to 900%. We find that, when an AGNR is connected perpendicularly to zigzag-shaped edges, the AGNR allows for long-range extension of the otherwise localized edge state. The huge magnetoresistance is a direct consequence of the coupling of two such extended states from both ends of the AGNR, which forms a perfect transmission channel. By tuning the coupling between these two spin-polarized states with a magnetic field, the channel can be destroyed, leading to an abrupt drop in electron transmission.

  14. On-line irradiation testing of a Giant Magneto-Resistive (GMR) sensor

    Energy Technology Data Exchange (ETDEWEB)

    Olfert, J.; Luloff, B.; MacDonald, D.; Lumsden, R., E-mail: jeff.olfert@cnl.ca [Canadian Nuclear Laboratories, Chalk River, Ontario (Canada)

    2016-06-15

    Magneto-resistive sensors are rapidly gaining favour for magnetic field sensing applications owing to their high sensitivity, small size, and low cost. Their metallic, nonsemiconductor construction makes them excellent candidates for use in the harsh environments present in nuclear and space applications. In this work, a commercially available magneto-resistive sensor was irradiated up to a total gamma dose of 2 MGy (200 Mrad), and online testing was performed to monitor the sensor throughout the irradiation to detect any degradation. No significant evidence of degradation of the sensor characteristics was observed. A very small (< 1%) change in the bridge balance of the sensor as a function of accumulated dose was detected. (author)

  15. The crystal structure and vibrational spectra of two molecules emitting dual fluorescence: 4-(1H-Pyrrol-1-yl)benzonitrile (PBN) and 5-cyano-2-(1pyrrolyl)-pyridine (CPP)

    Energy Technology Data Exchange (ETDEWEB)

    Schweke, D.; Abramov, S. [Department of Physical Chemistry and the Farkas Center for Light Induced Processes, Hebrew University of Jerusalem, Jerusalem (Israel); Haas, Y. [Department of Physical Chemistry and the Farkas Center for Light Induced Processes, Hebrew University of Jerusalem, Jerusalem (Israel)], E-mail: yehuda@chem.ch.huji.ac.il

    2007-05-21

    Crystal structures and vibrational spectra are reported for the two title molecules which exhibit dual fluorescence due to the existence of a low lying charge transfer excited state. The data show that in the ground state PBN is twisted whereas CPP is planar, and the crystal structures are quite different. The experimental spectra are in very good agreement with quantum mechanical calculations, which also predict considerable differences between the vibrational spectra of CPP in the ground state and in the charge transfer excited state.

  16. Magnetic field-dependent shape anisotropy in small patterned films studied using rotating magnetoresistance

    OpenAIRE

    Xiaolong Fan; Hengan Zhou; Jinwei Rao; Xiaobing Zhao; Jing Zhao; Fengzhen Zhang; Desheng Xue

    2015-01-01

    Based on the electric rotating magnetoresistance method, the shape anisotropy of a Co microstrip has been systematically investigated. We find that the shape anisotropy is dependent not only on the shape itself, but also on the magnetization distribution controlled by an applied magnetic field. Together with micro-magnetic simulations, we present a visualized picture of how non-uniform magnetization affects the values and polarities of the anisotropy constants and . From the perspective of po...

  17. Magnetoresistance of a two-dimensional electron gas in a random magnetic field

    DEFF Research Database (Denmark)

    Smith, Anders; Taboryski, Rafael Jozef; Hansen, Luise Theil

    1994-01-01

    We report magnetoresistance measurements on a two-dimensional electron gas made from a high-mobility GaAs/AlxGa1-xAs heterostructure, where the externally applied magnetic field was expelled from regions of the semiconductor by means of superconducting lead grains randomly distributed on the surf...... on the surface of the sample. A theoretical explanation in excellent agreement with the experiment is given within the framework of the semiclassical Boltzmann equation. © 1994 The American Physical Society...

  18. Giant Magnetoresistive Sensors and Magnetic Labels for Chip-Scale Detection of Immunosorbent Assays

    Energy Technology Data Exchange (ETDEWEB)

    Millen, Rachel Lora [Iowa State Univ., Ames, IA (United States)

    2005-01-01

    The combination of giant magnetoresistive sensors, magnetic labeling strategies, and biomolecule detection is just beginning to be explored. New readout methods and assay formats are necessary for biomolecules detection to flourish. The work presented in this dissertation describes steps toward the creation of a novel detection method for bioassays utilizing giant magnetoresistive sensors as the readout method. The introduction section contains a brief review of some of the current methods of bioassay readout. The theoretical underpinnings of the giant magnetoresistive effect are also discussed. Finally, the more prominent types of giant magnetoresistive sensors are described, as well as their complicated fabrication. Four data chapters follow the introduction; each chapter is presented as a separate manuscript, either already published or soon to be submitted. Chapter 1 presents research efforts toward the production of a bioassay on the surface of a gold-modified GMR sensor. The testing of this methodology involved the capture of goat a-mouse-coated magnetic nanoparticles on the mouse IgG-modified gold surface. The second, third and fourth chapters describe the utilization of a self-referenced sample stick for scanning across the GMR sensor. The sample stick consisted of alternating magnetic reference and bioactive gold addresses. Chapter 2 is concerned with the characterization of both the scanning readout method and the binding and detection of streptavidin-coated magnetic particles to a biotinylated surface. Chapter 3 advances the sample stick readout with the use of the system for detection of a sandwich immunoassay with rabbit IgG proteins. Finally, simultaneous detection of three IgG proteins is demonstrated in Chapter 4. The dissertation is concluded with a brief summary of the research presented and a discussion of the possible future applications and direction of this work.

  19. Longitudinal magnetoresistance of layered crystals in a quantizing magnetic field taking into account the spin splitting

    Science.gov (United States)

    Askerov, B. M.; Figarova, S. R.; Mahmudov, M. M.

    2006-07-01

    The magnetoresistance of layered crystals in a longitudinal quantizing magnetic field by taking into account the spin splitting is theoretically investigated. The general expression for the electrical conductivity of a quasi two-dimensional electron gas at the deformation-potential scattering has been obtained. In the behavior of the specific resistance, peaks have been revealed, and a number and positions of the peaks are dictated by the spin splitting magnitude.

  20. Negative tunnelling magnetoresistance in spin filtering magnetic junctions with spin-orbit coupling

    Institute of Scientific and Technical Information of China (English)

    Li Yun

    2011-01-01

    We present theoretical calculations of spin transport in spin filtering magnetic tunnelling junctions based on the Landauer-Büttiker formalism and taking into account the spin-orbit coupling (SOC). It is shown that spin-flip scattering induced by SOC is stronger in parallel alignment of magnetization of the ferromegnet barrier (FB) and the ferromagnetic electrode than that in antiparallel case. The increase of negative tunnelling magnetoresistance with bias is in agreement with recent experimental observation.

  1. Giant Magnetoresistive Sensors and Magnetic Labels for Chip-Scale Detection of Immunosorbent Assays

    Energy Technology Data Exchange (ETDEWEB)

    Rachel Lora Millen

    2005-12-17

    The combination of giant magnetoresistive sensors, magnetic labeling strategies, and biomolecule detection is just beginning to be explored. New readout methods and assay formats are necessary for biomolecules detection to flourish. The work presented in this dissertation describes steps toward the creation of a novel detection method for bioassays utilizing giant magnetoresistive sensors as the readout method. The introduction section contains a brief review of some of the current methods of bioassay readout. The theoretical underpinnings of the giant magnetoresistive effect are also discussed. Finally, the more prominent types of giant magnetoresistive sensors are described, as well as their complicated fabrication. Four data chapters follow the introduction; each chapter is presented as a separate manuscript, either already published or soon to be submitted. Chapter 1 presents research efforts toward the production of a bioassay on the surface of a gold-modified GMR sensor. The testing of this methodology involved the capture of goat a-mouse-coated magnetic nanoparticles on the mouse IgG-modified gold surface. The second, third and fourth chapters describe the utilization of a self-referenced sample stick for scanning across the GMR sensor. The sample stick consisted of alternating magnetic reference and bioactive gold addresses. Chapter 2 is concerned with the characterization of both the scanning readout method and the binding and detection of streptavidin-coated magnetic particles to a biotinylated surface. Chapter 3 advances the sample stick readout with the use of the system for detection of a sandwich immunoassay with rabbit IgG proteins. Finally, simultaneous detection of three IgG proteins is demonstrated in Chapter 4. The dissertation is concluded with a brief summary of the research presented and a discussion of the possible future applications and direction of this work.

  2. Magnetoresistance in Co/AlO sub x /Co tunnel junction arrays

    CERN Document Server

    Urech, M; Haviland, D B

    2002-01-01

    Lateral arrays of Co/AlO sub x /Co junctions with dimensions down to 60 nm and inter-junction separations approx 60-100 nm have been fabricated and analyzed for possible coherent tunneling effects. Extra attention is paid to avoid uncertainties due to inconsistencies in switching and/or resistance of successive barriers. We observe approx 10% magnetoresistance enhancement at moderate bias in double junctions that cannot be accounted for by a simple model of two resistsors in series.

  3. On the importance of sensor height variation for detection of magnetic labels by magnetoresistive sensors

    OpenAIRE

    Anders Dahl Henriksen; Shan Xiang Wang; Mikkel Fougt Hansen

    2015-01-01

    Magnetoresistive sensors are widely used for biosensing by detecting the signal from magnetic labels bound to a functionalized area that usually covers the entire sensor structure. Magnetic labels magnetized by a homogeneous applied magnetic field weaken and strengthen the applied field when they are over and outside the sensor area, respectively, and the detailed origin of the sensor signal in experimental studies has not been clarified. We systematically analyze the signal from both a singl...

  4. The magnetoresistive transformer of active power with semiconductors of the knot operation.

    Directory of Open Access Journals (Sweden)

    V. G. Smolyaninov

    2011-03-01

    Full Text Available This management it is possible to realize a magnetoresistive transformer by an electric way due to the change of tension of the field, that is within the limits of ferromagnetic resonance of tape which forms a pickoff. Regulation of phase correlations is necessary to be produced in the chain of current, which embraces a pickoff. The management facilities are considered with galvanic outcome and power semiconductors, the calculation of the switch elementes with the help of simple analytical equations.

  5. Negative magnetoresistance temperature dependence induced by current-pumped nuclear spin polarization at the ν =2/3 quantum Hall state

    Science.gov (United States)

    Tsuda, Shibun; Nguyen, Minh-Hai; Terasawa, Daiju; Fukuda, Akira; Sawada, Anju

    2016-03-01

    We investigate the huge longitudinal resistance (HLR) at which the magnetoresistance of the ν =2/3 fractional quantum Hall state (QHS) is increased with dynamic nuclear spin polarization. We measure the magnetoresistance temperature dependence in the resistively saturated HLR by increasing the temperature of the sample rapidly in order to prevent relaxation of the nuclear spin polarization. The obtained results indicate that the magnetoresistance decreases as the temperature increases. The Hall resistance in the HLR is also measured and found to exhibit a plateau close to a quantized value. We discuss the negative magnetoresistance temperature dependence with a stripe-shaped domain state deformed by the nuclear spin polarization.

  6. Magnetic susceptibility and magnetoresistance of neutron-irradiated doped SI whiskers

    Energy Technology Data Exchange (ETDEWEB)

    Druzhinin, A.A., E-mail: druzh@polynet.lviv.ua [Lviv Polytechnic National University, S. Bandera Str., 12, Lviv 79013 (Ukraine); International Laboratory of High Magnetic Fields and Low Temperatures, Wroclaw (Poland); Ostrovskii, I.P.; Khoverko, Yu.M. [Lviv Polytechnic National University, S. Bandera Str., 12, Lviv 79013 (Ukraine); International Laboratory of High Magnetic Fields and Low Temperatures, Wroclaw (Poland); Rogacki, K. [International Laboratory of High Magnetic Fields and Low Temperatures, Wroclaw (Poland); Litovchenko, P.G.; Pavlovska, N.T. [Institute of Nuclear Researches, NAS of Ukraine, 47, Prospect Nauky, 03028 Kyiv (Ukraine); Pavlovskyy, Yu.V.; Ugrin, Yu.O. [Ivan Franko Drohobych State Pedagogical University, 24, Franko str., 82100 Drohobych (Ukraine)

    2015-11-01

    The effect of 8.6·10{sup 17} n/cm{sup 2} fast neutron irradiation on the magnetic susceptibility and magnetoresistance of Si whiskers with impurity concentration near metal–insulator transition (MIT) has been studied. Neutron irradiated specimens with boron concentration away of MIT are mainly diamagnetic with a small amount of paramagnetic centers originated from dangling bonds on the whisker surface. It has been established that at temperatures near 4.2 K, a significant contribution to the conductivity is made by light charge carriers of low concentration but with high mobility. The as grown whiskers with impurity concentration correspondent to MIT showed hysteresis loops in magnetization at temperature of liquid helium. Besides hysteresis loops in magnetoresistance was observed for whiskers under compression stress at low temperature up to 7 K. The possible reason of the effect can be magnetic interaction between impurities centers in subsurface region of the whisker with the orbital moment of dangle bounds in the whisker core–shell interstices. - Highlights: • Neutron irradiation influence on magnetic susceptibility of Si whiskers is studied. • Neutron irradiated Si whiskers with boron concentration away of MIT are diamagnetic. • Whiskers in the vicinity to MIT showed hysteresis loops in magnetoresistance. • Whiskers in the vicinity to MIT showed hysteresis loops in magnetic susceptibility.

  7. Magnetoresistance and Anti-Ferromagnetic Coupling in FM-Graphene-FM Trilayers

    Science.gov (United States)

    Cobas, Enrique D.; van't Erve, Olaf M. J.; Cheng, Shu-Fan; Jonker, Berend T.

    Both high-magnetoresistance(MR) minority spin filtering and anti-ferromagnetic (AFM) coupling have been predicted for FM|Graphene|FM vertical heterostructures. Our previous experiments demonstrated ordinary magnetoresistance in NiFe-Graphene-Co heterostructures and no evident AFM coupling. Here we present experimental results that confirm both MR minority spin filtering and AFM coupling in high-quality FM|Graphene|FM heterostructures. The heterostructures were fabricated by a combination of sputtering, chemical vapor deposition and electron beam evaporation. The stack was patterned into symmetric cross-bar structures using Ar ion milling. Measurements show negative magnetoresistance in excess of 10 percent, confirming spin-filtering, and weak anti-ferromagnetic coupling throughout the temperature range 15K to 300K. The temperature dependence of the MR was studied and found consistent with thermal excitation of spin waves in the ferromagnetic electrodes. Junction resistance-area products are in the range of 10 Ωcm2. These heterostructures provide a fast and low-power magnetic field sensor in the sub-100 Oe range and are a step towards high-MR low RA-product MRAM junctions.

  8. Large linear magnetoresistance in a new Dirac material BaMnBi2

    Science.gov (United States)

    Wang, Yi-Yan; Yu, Qiao-He; Xia, Tian-Long

    2016-10-01

    Dirac semimetal is a class of materials that host Dirac fermions as emergent quasi-particles. Dirac cone-type band structure can bring interesting properties such as quantum linear magnetoresistance and large mobility in the materials. In this paper, we report the synthesis of high quality single crystals of BaMnBi2 and investigate the transport properties of the samples. BaMnBi2 is a metal with an antiferromagnetic transition at T N = 288 K. The temperature dependence of magnetization displays different behavior from CaMnBi2 and SrMnBi2, which suggests the possible different magnetic structure of BaMnBi2. The Hall data reveals electron-type carriers and a mobility μ(5 K) = 1500 cm2/V·s. Angle-dependent magnetoresistance reveals the quasi-two-dimensional (2D) Fermi surface in BaMnBi2. A crossover from semiclassical MR ˜ H 2 dependence in low field to MR ˜ H dependence in high field, which is attributed to the quantum limit of Dirac fermions, has been observed in magnetoresistance. Our results indicate the existence of Dirac fermions in BaMnBi2. Project supported by the National Natural Science Foundation of China (Grant No. 11574391), the Fundamental Research Funds for the Central Universities, and the Research Funds of Renmin University of China (Grant No. 14XNLQ07).

  9. Theory of magnetoresistance of organic molecular tunnel junctions with nonmagnetic electrodes

    Science.gov (United States)

    Shi, Sha; Xie, Zuoti; Liu, Feilong; Smith, Darryl L.; Frisbie, C. Daniel; Ruden, P. Paul

    2017-04-01

    Large room-temperature magnetoresistance observed for devices composed of self-assembled monolayers of different oligophenylene thiols sandwiched between gold contacts has recently been reported [Z. Xie, S. Shi, F. Liu, D. L. Smith, P. P. Ruden, and C. D. Frisbie, ACS Nano 10, 8571 (2016), 10.1021/acsnano.6b03853]. The transport mechanism through the organic molecules was determined to be nonresonant tunneling. To explain this kind of magnetoresistance, we develop an analytical model based on the interaction of the tunneling charge carrier with an unpaired charge carrier populating a contact-molecule interface state. The Coulomb interaction between carriers causes the transmission coefficients to depend on their relative spin orientation. Singlet and triplet pairing of the tunneling and the interface carriers thus correspond to separate conduction channels with different transmission probabilities. Spin relaxation enabling transitions between the different channels, and therefore tending to maximize the tunneling current for a given applied bias, can be suppressed by relatively small magnetic fields, leading to large magnetoresistance. Our model elucidates how the Coulomb interaction gives rise to transmission probabilities that depend on spin and how an applied magnetic field can inhibit transitions between different spin configurations.

  10. Extraordinary Hall resistance and unconventional magnetoresistance in Pt/LaCoO 3 hybrids

    Science.gov (United States)

    Shang, T.; Zhan, Q. F.; Yang, H. L.; Zuo, Z. H.; Xie, Y. L.; Zhang, Y.; Liu, L. P.; Wang, B. M.; Wu, Y. H.; Zhang, S.; Li, Run-Wei

    2015-10-01

    We report an investigation of transverse Hall resistance and longitudinal resistance on Pt thin films sputtered on epitaxial LaCoO3 (LCO) ferromagnetic insulator films. The LaCoO3 films were deposited on several single crystalline substrates [LaAlO3,(La,Sr)(Al,Ta)O3, and SrTiO3] with (001) orientation. The physical properties of LaCoO3 films were characterized by the measurements of magnetic and transport properties. The LaCoO3 films undergo a paramagnetic to ferromagnetic (FM) transition at Curie temperatures ranging from 40 to 85 K, below which the Pt/LCO hybrids exhibit significant extraordinary Hall resistance up to 50 m Ω and unconventional magnetoresistance ratio Δ ρ /ρ0 about 1.2 ×10-4 , accompanied by the conventional magnetoresistance. The observed spin transport properties share some common features as well as some unique characteristics when compared with well-studied Y3Fe5O12 -based Pt thin films. Our findings call for new theories since the extraordinary Hall resistance and magnetoresistance cannot be consistently explained by the existing theories.

  11. Magnetoresistance and electrical properties of multi-component copper chalcogenides at pressures up to 50 GPa

    Science.gov (United States)

    Melnikova, Nina; Tebenkov, Alexander; Babushkin, Alexey; Kurochka, Kirill; Phase Transitions Team; Transport Properties Team; Novel Materials Team

    2013-06-01

    Multi-component chalcogenides based on layered semiconductors A3B6 (such as InS, InSe, GaS, GaSe, etc) are new objects of study, they have interesting physical properties and undergo temperature and baric phase transitions. This paper presents the results of a study of the electrical properties and magnetoresistance of CuInS2, CuInSe2, CuInAsS3, CuInAsSe3, CuInSbS3 at pressures up to 50 GPa. High pressures have been generated in the cell with synthetic carbonado-type diamond anvils that can be used as electric contacts. Electric properties at high pressure have been investigated on dc current and by means of impedance spectroscopy. Magnetoresistance has been measured in transverse magnetic field. The pressure ranges of noticeable changes in a behavior of magnetoresistance, of impedance and admittance, tangent of loss angle, relaxation time upon a pressure increase and a pressure decrease are established. This behavior of physical parameters can be due to structural transitions and due to a change of electron structure. This work was supported in part by the Russian Foundation for Basic Research, project no. 13-02-00633.

  12. Universal behavior of magnetoresistance in quantum dot arrays with different degrees of disorder.

    Science.gov (United States)

    Stepina, N P; Koptev, E S; Pogosov, A G; Dvurechenskii, A V; Nikiforov, A I; Zhdanov, E Yu; Galperin, Y M

    2013-12-18

    The magnetoresistance in a two-dimensional array of Ge/Si quantum dots was studied in a wide range of zero magnetic field conductances, where the transport regime changes from a hopping to a diffusive one. The behavior of the magnetoresistance is found to be similar for all samples--it is negative in weak fields and becomes positive with increasing magnetic field. The result apparently contradicts existing theories. To explain experimental data we suggest that clusters of overlapping quantum dots are formed. These clusters are assumed to have metal-like conductance, the charge transfer taking place via hopping between the clusters. Relatively strong magnetic field shrinks electron wavefunctions, decreasing inter-cluster hopping and, therefore, leading to a positive magnetoresistance. Weak magnetic field acts on 'metallic' clusters, destroying the interference of the electron wavefunctions corresponding to different paths (weak localization) inside clusters. The interference may be restricted either by inelastic processes, or by the cluster size. Taking into account weak localization inside clusters and hopping between them within the effective medium approximation, we extract effective parameters characterizing charge (magneto-) transport.

  13. A fatality following ingestion of the designer drug meta-chlorophenylpiperazine (mCPP) in an asthmatic--HPLC-MS/MS detection in biofluids and hair.

    Science.gov (United States)

    Gaillard, Yvan P; Cuquel, Anne-Claire; Boucher, Alexandra; Romeuf, Ludovic; Bevalot, Fabien; Prevosto, Jen-Michel; Menard, Jean-Marie

    2013-01-01

    A 20-year-old man, a cocaine addict and regular ecstasy user, with a medical history of allergic asthma died after ingesting half a tablet earlier the same day. The white tablet, stamped with a "smiling sun" logo looked very much like an ecstasy tablet and was sold as such. He experienced a severe asthma attack just after ingesting the half tablet and it evolved over the next few hours into fatal cardiorespiratory arrest. Biological samples, taken after embalming, were analyzed by high-performance liquid chromatography tandem mass spectrometry (HPLC-MS/MS). Analysis revealed meta-chlorophenylpiperazine (mCPP) in concentrations of 45.8 mg in a similar tablet obtained later from the drug dealer, 5.1 ng/mL in the bile, 0.3 ng/g in the liver, 15.0 ng/mL in the urine, and its absence in a hair sample (<0.02 ng/mg), which indicated he was not a regular user (whereas strong concentrations of MDMA and cocaine were found in the hair). Interrogated by the police after his arrest, the dealer said that he had sold the victim and for the very first time two tablets with the same "smiling sun" logo. The tablet used for analysis was from the same brand as the one ingested by the victim. The autopsy excluded other causes of death, while the histological analyses showed a large number of polynuclear eosinophils in the bronchial walls, confirming the asthmatic pathology. None of the other organs examined (larynx, liver, heart, adrenal glands, and kidneys) showed any distinctive signs, and in particular no inflammatory infiltrate. The death was the result of an asthma attack in an asthmatic person, violently decompensated following ingestion of approximately 20 mg of mCPP.

  14. Linkage between PTK Signaling Pathway “Crosstalking” and Caspase-3/ CPP32-1ike Proteases Activation in Signaling Transduction of CD4+ T Lymphocytes Apoptosis Induced by Superantigen SEB

    Institute of Scientific and Technical Information of China (English)

    熊世勤; 朱锡华

    2003-01-01

    Exposure of naive murine CD4+ T lymphocytes to superantigen such as staphylococcal enterotoxin B (SEB) induces a strong proliferative response. Prolonged exposure or subsequent restimulation of the responding T cell population with SEB leads to the apoptotic events of activation-induced cell death (AICD). The signaling mechanism responsible for the AICD is a target of intensive investigation. However, the precise downstream signahng pathways of SEB-induced AICD remains unclear. Our results here show that the sequential activation of caspase-1/ICE-hke and caspase-3/CPP32-hke cysteine proteases probably plays a role in the signaling transduction of SEB-induced AICD, but caspase-3/CPP32-hke proteases activation does not depend on caspase-1-like proteases activation. Herbimycin A, a specific inhibitor of protein tyresine kinases,inhibit caspase-3/CPP32-1ike cysteine proteases activation. However, it does not prevent DNA fragmentation of CD4+ Tcells apoptosis induced by SEB. These results indicate that protein tyrosine kinases pathway is probably involved in the signaling transduction of CD4+ T cells apoptosis induced by SEB and “crosstalks” with the pathway of caspase-3/CPP32-1ike proteases activation.

  15. 酪蛋白磷酸肽-磷酸钙溶液抑制牛牙早期釉质龋的体外研究%Study on Effect of CPP-ACP in Inhibiting Bovine Enamel Demineralization in vitro

    Institute of Scientific and Technical Information of China (English)

    王伟萍; 卢友光; 冯岩

    2011-01-01

    Objective To investigate the effect of casein phosphopeptide-stabilized amorphous cal cium phosphate solution (CPP-ACP) in inhibiting bovine enamel demineralization in vitro. Methods Twenty-eight enamel pieces -were randomly divided into four groups(n=7) , and immersed in saliva for 24 hours to obtain acquired pellicle. Each group -was given different treatments (Group A: deionized water; Group B: 1% CPP-ACP; Group C: 0. 05% NaF; Group D: 1% CPP-ACP+0. 05% NaF) for 7 days, and immersed in fresh streptococcus mutans solution for 7 days to produce artificial caries. Finally, all sam ples were detected by the scanning electron microscope(SEM) and the surface microhardness(SMH) ma chine. Results The SEM showed lots of sizes concane on the enamel surface of group A. While the en amel surface of the other three groups were completed, and a large number of deposits were found on the surfaces. The SMH of groups B,C and D were higher than group A(P<0. 05). In groups B,C and D, there were significant differences bet ween each other(P<0. 05). Conclusion CPP-ACP can reduce en amel demineralization and promoting remineralization in vitro. CPP-ACP and NaF have synergistic effect in caries prevention.%目的 研究酪蛋白磷酸肽-磷酸钙溶液(CPP-ACP)在体外对牛牙釉质早期人工龋的抑制作用.方法 将28颗牛牙釉质样本随机分成4组,每组7颗,浸入唾液24 h以形成人工获得性膜,然后用4种不同溶液(A组:去离子水;B组:1% CPP-ACP溶液;C组:0.05%的NaF溶液;D组:1% CPP-ACP和0.05% NaF的混合液)浸泡7 d后,将其悬吊在新鲜配制的变异链球菌悬液中7 d,建立体外生物膜脱矿模型.采用扫描电镜观察处理前后牙釉质表面形态的改变,采用显微硬度法测量处理前后牙釉质表面硬度.结果 扫描电镜下,A组釉质表面可见大小不等的圆形孔隙,呈蜂窝状改变;其他3组釉质表面完整,没有明显的龋损孔隙,可见不规则的矿物质沉积.显微硬度测量显示,B、C

  16. Giant magnetoresistance effect and temperature dependence of magnetoresistance in La2/3Ca1/3MnO2 thin film

    Institute of Scientific and Technical Information of China (English)

    李可斌; 刘玲; 孙建三; 许小军; 方军; 王胜; 王福堂; 曹效文; 朱警生; 张裕恒

    1996-01-01

    Magnetoresistanoe in the temperature region from 300 K to liquid helium temperature has been measured on good (100) oriented La2/3Ca1/3MnO2 thin films prepared by d.c. magnetron sputtering on ZrO2 (100) substrates. It is found that there appears a resistance peak at about TP = 72K at zero magnetic field, and this peak moves to higher temperature with increasing field H, and R decreases simultaneously. However, the magnetoresistance ratio MR = 5R /R (H) = (Ro~ RH) /RH has a different temperature dependence. There are also MR peaks, but the temperature of maximum MR is at about 25 K which does not change with changing external magnetic field. The heat treatment (annealed at 700C in 105’Pa O2 for 30min) will make R reduce dramatically and has an effect on the temperature dependence of R and its MR.

  17. Low field magnetoresistance in a 2D topological insulator based on wide HgTe quantum well

    Science.gov (United States)

    Olshanetsky, E. B.; Kvon, Z. D.; Gusev, G. M.; Mikhailov, N. N.; Dvoretsky, S. A.

    2016-09-01

    Low field magnetoresistance is experimentally studied in a two-dimensional topological insulator (TI) in both diffusive and quasiballistic samples fabricated on top of a wide (14 nm) HgTe quantum well. In all cases a pronounced quasi-linear positive magnetoresistance is observed similar to that found previously in diffusive samples based on a narrow (8 nm) HgTe well. The experimental results are compared with the main existing theoretical models based on different types of disorder: sample edge roughness, nonmagnetic disorder in an otherwise coherent TI and metallic puddles due to locally trapped charges that act like local gate on the sample. The quasiballistic samples with resistance close to the expected quantized values also show a positive low-field magnetoresistance but with a pronounced admixture of mesoscopic effects.

  18. Magnetic properties,magnetoresistivity and magnetocaloric effect in GdxLa1-x-MnSi alloys

    Institute of Scientific and Technical Information of China (English)

    T.I.Ivanova; S.A.Nikitin; W.Suski; GA.Tskhadadze; I.A.Ovtchenkova; D.Badurski

    2009-01-01

    The results of magnetization,magnetoresistivity and magnetocaloric effect (MCE) studies performed on polycrystalline samples of the GdxLa1-xMnSi (x=0.5,0.6,0.7,0.8,0.9,1.0) compounds were presented.Complex measurements were carried out on the GdxLa1-xMnSi compounds to determine the influence of substitution in the rare earth (R) sublattice on the magnetic and related properties of these compounds.The compounds with x≤0.6 demonstrated two magnetic phase transitions (ferromagnetic to paramagnetic and antiferromagnetic to ferromagnetic) both of which were first order.Anomalies in the magnetocaloric effect,electroresistivity and magnetoresistivity were observed in the temperature ranges of the magnetic phase transitions.The temperature dependences of MCE and magnetoresistivity for these compounds correlated with the temperature dependence of magnetization.

  19. Magnetoresistance generated from charge-spin conversion by anomalous Hall effect in metallic ferromagnetic/nonmagnetic bilayers

    Science.gov (United States)

    Taniguchi, Tomohiro

    2016-11-01

    A theoretical formulation of magnetoresistance effect in a metallic ferromagnetic/nonmagnetic bilayer originated from the charge-spin conversion by the anomalous Hall effect is presented. Analytical expressions of the longitudinal and transverse resistivities in both nonmagnet and ferromagnet are obtained by solving the spin diffusion equation. The magnetoresistance generated from charge-spin conversion purely caused by the anomalous Hall effect in the ferromagnet is found to be proportional to the square of the spin polarizations in the ferromagnet and has fixed sign. We also find additional magnetoresistances in both nonmagnet and ferromagnet arising from the mixing of the spin Hall and anomalous Hall effects. The sign of this mixing resistance depends on those of the spin Hall angle in the nonmagnet and the spin polarizations of the ferromagnet.

  20. Spin Hall magnetoresistance in Co2FeSi/Pt thin films: dependence on Pt thickness and temperature

    Science.gov (United States)

    Huang, Xiufeng; Dai, Zhiwen; Huang, Lin; Lu, Guangduo; Liu, Min; Piao, Hongguang; Kim, Dong-Hyun; Yu, Seong-cho; Pan, Liqing

    2016-11-01

    We have investigated the temperature and the Pt layer thickness dependence of the magnetoresistances (MRs) in Co2FeSi/Pt thin films. Based on the field dependent measurements, it can be seen that the spin-current-induced spin Hall magnetoresistance (SMR) plays the dominant role in the MRs in the Co2FeSi/Pt bilayers in the whole temperature range. Meanwhile, a quite small part of anisotropic magnetoresistance (AMR) existed in the MRs. It proved to be originated from magnetic proximity effect (MPE) by measuring the Pt thickness and temperature dependence of the AMR. Moreover, the Co2FeSi layer thickness has much weaker effect on the SMR and AMR compared to the Pt layer thickness. These results indicate that the Co2FeSi/Pt interface is beneficial to be used in the spin-current-induced physical phenomena.

  1. Experimental Discovery of Magnetoresistance and Its Memory Effect in Methylimidazolium-Type Iron-Containing Ionic Liquids

    KAUST Repository

    Zhang, Haitao

    2016-11-29

    The ordering and interactions of charge carriers play a critical role in many physicochemical properties. It is, therefore, interesting to study how a magnetic field affects these physicochemical processes and the consequent behavior of the charge carriers. Here, we report the observation of positive magnetoresistance and its memory effect in methylimidazolium-type iron-containing ionic liquids (ILs). Both the electrical transport and magnetic properties of ILs were measured to understand the mechanism of magnetoresistance behavior and its memory effect. The magnetoresistance effect of [BMIM][FeCl] was found to increase with increasing applied currents. This observed memory effect can be ascribed to the slow order and disorder processes in these ILs due to the large viscosity caused by the interactions among ions.

  2. Magnetic field asymmetry and high temperature magnetoresistance in single-walled carbon nanotubes

    Science.gov (United States)

    Cobden, David

    2006-03-01

    The length scales and scattering processes in the one-dimensional electron system in single-walled carbon nanotubes remain only partially understood. Measuring the magnetoresistance, in both linear and nonlinear response, is a way to investigate these processes. In disordered nanotubes with ballistic paths much shorter than the length, we observe magnetoresistance in the metallic regime which at low temperatures resembles the universal fluctuations and weak localization seen in higher dimensional metals. A parabolic magnetoresistance persists at room temperature, indicating a significant role for phase coherence and/or interactions at high temperatures. While the linear resistance of a two-terminal sample must be an even function of magnetic field B by Onsager's principle, the nonlinear resistance need not be. Importantly, the B-asymmetric nonlinear terms can in principle be used to infer the strength of electron-electron interactions in the sample [1]. We have therefore also measured in detail the lowest order B-asymmetric current contributions, with a focus on the B-linear term. This has apparently not been done before in any system. Consistent with general theory, at high temperatures the term is small and has a constant sign independent of Fermi energy. At low temperatures it grows and develops mesoscopic fluctuations. Although these result imply that interactions are involved in the transport, calculations specific to nanotubes are needed in order to extract interaction parameters. This work was done by the authors of Ref [2]. References: [1] E.L. Ivchenko and B. Spivak, Phys. Rev. B 66, 155404 (2002); [2] Jiang Wei, Michael Shimogawa, Zenghui Wang, Iuliana Radu, Robert Dormaier, and David H. Cobden, Phys. Rev. Lett. (Dec. 2005) (cond-mat/0506275).

  3. Spatial mobility fluctuation induced giant linear magnetoresistance in multilayered graphene foam

    KAUST Repository

    Li, Peng

    2016-07-05

    Giant, positive, and near-temperature-independent linear magnetoresistance (LMR), as large as 340%, was observed in graphene foam with a three-dimensional flexible network. Careful analysis of the magnetoresistance revealed that Shubnikov–de Haas (SdH) oscillations occurred at low temperatures and decayed with increasing temperature. The average classical mobility ranged from 300 (2 K) to 150 (300 K) cm2V−1s−1, which is much smaller than that required by the observed SdH oscillations. To understand the mechanism behind the observation, we performed the same measurements on the microsized graphene sheets that constitute the graphene foam. Much more pronounced SdH oscillations superimposed on the LMR background were observed in these microscaled samples, which correspond to a quantum mobility as high as 26,500cm2V−1s−1. Moreover, the spatial mobility fluctuated significantly from 64,200cm2V−1s−1 to 1370cm2V−1s−1, accompanied by a variation of magnetoresistance from near 20,000% to less than 20%. The presence of SdH oscillations actually excludes the possibility that the observed LMR originated from the extreme quantum limit, because this would demand all electrons to be in the first Landau level. Instead, we ascribe the large LMR to the second case of the classical Parish and Littlewood model, in which spatial mobility fluctuation dominates electrical transport. This is an experimental confirmation of the Parish and Littlewood model by measuring the local mobility randomly (by measuring the microsized graphene sheets) and finding the spatial mobility fluctuation.

  4. Magnetic field-dependent shape anisotropy in small patterned films studied using rotating magnetoresistance.

    Science.gov (United States)

    Fan, Xiaolong; Zhou, Hengan; Rao, Jinwei; Zhao, Xiaobing; Zhao, Jing; Zhang, Fengzhen; Xue, Desheng

    2015-11-13

    Based on the electric rotating magnetoresistance method, the shape anisotropy of a Co microstrip has been systematically investigated. We find that the shape anisotropy is dependent not only on the shape itself, but also on the magnetization distribution controlled by an applied magnetic field. Together with micro-magnetic simulations, we present a visualized picture of how non-uniform magnetization affects the values and polarities of the anisotropy constants K1 and K2. From the perspective of potential appliantions, our results are useful in designing and understanding the performance of micro- and nano-scale patterned ferromagnetic units and the related device properties.

  5. Hydrodynamic theory of thermoelectric transport and negative magnetoresistance in Weyl semimetals

    Science.gov (United States)

    Lucas, Andrew; Davison, Richard A.; Sachdev, Subir

    2016-08-01

    We present a theory of thermoelectric transport in weakly disordered Weyl semimetals where the electron-electron scattering time is faster than the electron-impurity scattering time. Our hydrodynamic theory consists of relativistic fluids at each Weyl node, coupled together by perturbatively small intervalley scattering, and long-range Coulomb interactions. The conductivity matrix of our theory is Onsager reciprocal and positive semidefinite. In addition to the usual axial anomaly, we account for the effects of a distinct, axial-gravitational anomaly expected to be present in Weyl semimetals. Negative thermal magnetoresistance is a sharp, experimentally accessible signature of this axial-gravitational anomaly, even beyond the hydrodynamic limit.

  6. Thermal effect mechanism of magnetoresistance in p-type diamond films

    Institute of Scientific and Technical Information of China (English)

    Qin Guo-Ping; Kong Chun-Yang; Ruan Hai-Bo; Huang Gui-Juan; Cui Yu-Ting; Fang Liang

    2010-01-01

    Based on the analysis and the discussion of the influence of thermal ionization energy and various scatterings on magnetoresistance(MR) of p-type diamond films, a revised model of valence band split-off over temperature is put forward, and a corresponding calculation formula is given for the MR of p-type diamond films (Corbino discs). It is shown that the theoretical calculation that the MR of diamond films changes with temperature is consistent with the experiment. The influence of Fermi energy level on MR of diamond films is discussed. Additionally, the thermal effect mechanism of MR in p-type diamond films is also explored.

  7. Realisation of all 16 Boolean logic functions in a single magnetoresistance memory cell

    Science.gov (United States)

    Gao, Shuang; Yang, Guang; Cui, Bin; Wang, Shouguo; Zeng, Fei; Song, Cheng; Pan, Feng

    2016-06-01

    Stateful logic circuits based on next-generation nonvolatile memories, such as magnetoresistance random access memory (MRAM), promise to break the long-standing von Neumann bottleneck in state-of-the-art data processing devices. For the successful commercialisation of stateful logic circuits, a critical step is realizing the best use of a single memory cell to perform logic functions. In this work, we propose a method for implementing all 16 Boolean logic functions in a single MRAM cell, namely a magnetoresistance (MR) unit. Based on our experimental results, we conclude that this method is applicable to any MR unit with a double-hump-like hysteresis loop, especially pseudo-spin-valve magnetic tunnel junctions with a high MR ratio. Moreover, after simply reversing the correspondence between voltage signals and output logic values, this method could also be applicable to any MR unit with a double-pit-like hysteresis loop. These results may provide a helpful solution for the final commercialisation of MRAM-based stateful logic circuits in the near future.Stateful logic circuits based on next-generation nonvolatile memories, such as magnetoresistance random access memory (MRAM), promise to break the long-standing von Neumann bottleneck in state-of-the-art data processing devices. For the successful commercialisation of stateful logic circuits, a critical step is realizing the best use of a single memory cell to perform logic functions. In this work, we propose a method for implementing all 16 Boolean logic functions in a single MRAM cell, namely a magnetoresistance (MR) unit. Based on our experimental results, we conclude that this method is applicable to any MR unit with a double-hump-like hysteresis loop, especially pseudo-spin-valve magnetic tunnel junctions with a high MR ratio. Moreover, after simply reversing the correspondence between voltage signals and output logic values, this method could also be applicable to any MR unit with a double-pit-like hysteresis

  8. Frequency-dependent polarization-angle-phase-shift in the microwave-induced magnetoresistance oscillations

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Han-Chun; Ye, Tianyu; Mani, R. G. [Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia 30303 (United States); Wegscheider, W. [Laboratorium für Festkörperphysik, ETH Zürich, CH-8093 Zürich (Switzerland)

    2015-02-14

    Linear polarization angle, θ, dependent measurements of the microwave radiation-induced oscillatory magnetoresistance, R{sub xx}, in high mobility GaAs/AlGaAs 2D electron devices have shown a θ dependence in the oscillatory amplitude along with magnetic field, frequency, and extrema-dependent phase shifts, θ{sub 0}. Here, we suggest a microwave frequency dependence of θ{sub 0}(f) using an analysis that averages over other smaller contributions, when those contributions are smaller than estimates of the experimental uncertainty.

  9. Magnetoresistance of ZnO:Co Thin Films at Low Temperatures

    Science.gov (United States)

    Kytin, V. G.; Maximova, O. V.; Kulbachinskii, V. A.; Muftieva, D. A.; Burova, L. I.; Kaul, A. R.

    2016-03-01

    Large positive magnetoresistance was observed in Co-doped thin ZnO films at low temperatures and analyzed in the frame of the model based on the exchange interaction between the conduction electrons and the electrons of a magnetic impurity for the films with temperature dependence of resistivity described by Mott's law. Estimates of the localization length of electronic states participating in hopping conduction were obtained. The obtained values of the localization length are close to the effective Bohr radii of shallow donors in ZnO.

  10. Magnetoresistance of ZnO:Co Thin Films at Low Temperatures

    Science.gov (United States)

    Kytin, V. G.; Maximova, O. V.; Kulbachinskii, V. A.; Muftieva, D. A.; Burova, L. I.; Kaul, A. R.

    2016-12-01

    Large positive magnetoresistance was observed in Co-doped thin ZnO films at low temperatures and analyzed in the frame of the model based on the exchange interaction between the conduction electrons and the electrons of a magnetic impurity for the films with temperature dependence of resistivity described by Mott's law. Estimates of the localization length of electronic states participating in hopping conduction were obtained. The obtained values of the localization length are close to the effective Bohr radii of shallow donors in ZnO.

  11. Voltage-controlled inversion of tunnel magnetoresistance in epitaxial nickel/graphene/MgO/cobalt junctions

    Energy Technology Data Exchange (ETDEWEB)

    Godel, F.; Doudin, B.; Henry, Y.; Halley, D., E-mail: halley@ipcms.unistra.fr, E-mail: dayen@ipcms.unistra.fr; Dayen, J.-F., E-mail: halley@ipcms.unistra.fr, E-mail: dayen@ipcms.unistra.fr [Institut de Physique et Chimie des Matériaux de Strasbourg (IPCMS), UMR 7504 CNRS-UdS, 23 rue du Loess, 67034 Strasbourg (France); Venkata Kamalakar, M. [Institut de Physique et Chimie des Matériaux de Strasbourg (IPCMS), UMR 7504 CNRS-UdS, 23 rue du Loess, 67034 Strasbourg (France); Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-41296 Göteborg (Sweden)

    2014-10-13

    We report on the fabrication and characterization of vertical spin-valve structures using a thick epitaxial MgO barrier as spacer layer and a graphene-passivated Ni film as bottom ferromagnetic electrode. The devices show robust and scalable tunnel magnetoresistance, with several changes of sign upon varying the applied bias voltage. These findings are explained by a model of phonon-assisted transport mechanisms that relies on the peculiarity of the band structure and spin density of states at the hybrid graphene|Ni interface.

  12. Negative tunneling magneto-resistance in quantum wires with strong spin-orbit coupling

    Science.gov (United States)

    Han, Seungju; Serra, Llorenç; Choi, Mahn-Soo

    2015-06-01

    We consider a two-dimensional magnetic tunnel junction of the FM/I/QW(FM+SO)/I/N structure, where FM, I and QW(FM+SO) stand for a ferromagnet, an insulator and a quantum wire with both magnetic ordering and Rashba spin-orbit (SOC), respectively. The tunneling magneto-resistance (TMR) exhibits strong anisotropy and switches sign as the polarization direction varies relative to the quantum-wire axis, due to interplay among the one-dimensionality, the magnetic ordering, and the strong SOC of the quantum wire.

  13. Interfacial exchange coupling induced anomalous anisotropic magnetoresistance in epitaxial γ'-Fe₄N/CoN bilayers.

    Science.gov (United States)

    Li, Zirun; Mi, Wenbo; Wang, Xiaocha; Zhang, Xixiang

    2015-02-18

    Anisotropic magnetoresistance (AMR) of the facing-target reactively sputtered epitaxial γ'-Fe4N/CoN bilayers is investigated. The phase shift and rectangular-like AMR appears at low temperatures, which can be ascribed to the interfacial exchange coupling. The phase shift comes from the exchange bias (EB) that makes the magnetization lag behind a small field. When the γ'-Fe4N thickness increases, the rectangular-like AMR appears. The rectangular-like AMR should be from the combined contributions including the EB-induced unidirectional anisotropy, intrinsic AMR of γ'-Fe4N layer and interfacial spin scattering.

  14. Grain Size Effect on Electrical Conductivity and Giant Magnetoresistance of Bulk Magnetic Polycrystals

    Institute of Scientific and Technical Information of China (English)

    LUO Wei; ZHU Lin-Li; ZHENG Xiao-Jing

    2009-01-01

    By solving the Boltzmann transport equation and considering the spin-dependent grain boundary scattering, the distribution of electrons in grains and the electrical transport properties in the applied magnetic field are studied. With regard to the dominant influence of grain boundary scattering which is taken as a boundary condi-tion for the electrical transport, the grain size-dependent electrical conductivity is investigated. In addition, the reorientation of the relative magnetization between grains brings the change of the electron spin when the magne-tonanocrystalline material is subjected to the magnetic field, resulting in the remarkable giant magnetoresistance effect.

  15. The angular-dependent magnetoresistance in α-(BEDT-TTF)2 KHg(SCN)4

    Science.gov (United States)

    Dóra, B.; Maki, K.; Korin-Hamzic, B.; Basletic, M.; Virosztek, A.; Kartsovnik, M. V.; Müller, H.

    2002-12-01

    In spite of extensive experimental studies of the angular-dependent magnetoresistance (ADMR) of the low-temperature phase (LTP) of α-(BEDT-TTF)2 KHg(SCN)4 about a decade ago, the nature of LTP remains elusive. Here we present a new study of ADMR of LTP in α-(ET)2 salts assuming that LTP is unconventional charge density wave (UCDW). In the presence of magnetic field the quasi-particle spectrum in UCDW is quantized, which gives rise to striking ADMR in UCDW. The present model appears to account for many existing ADMR data of α-(BEDT-TTF)2 KHg(SCN)4 remarkably well.

  16. Angle-Dependent Magnetoresistance in the Weakly Incoherent Interlayer Transport Regime in a Layered Organic Conductor

    Science.gov (United States)

    Kartsovnik, M. V.; Andres, D.; Simonov, S. V.; Biberacher, W.; Sheikin, I.; Kushch, N. D.; Müller, H.

    2006-04-01

    We present comparative studies of the orientation effect of a strong magnetic field on the interlayer resistance of α-(BEDT-TTF)2KHg(SCN)4 samples characterized by different crystal quality. We find striking differences in their behavior, which is attributed to the breakdown of the coherent charge transport across the layers in the lower quality sample. In the latter case, the nonoscillating magnetoresistance background is essentially a function of only the out-of-plane field component, in contradiction to the existing Fermi-liquid theories.

  17. Voltage-controlled inversion of tunnel magnetoresistance in epitaxial nickel/graphene/MgO/cobalt junctions

    Science.gov (United States)

    Godel, F.; Venkata Kamalakar, M.; Doudin, B.; Henry, Y.; Halley, D.; Dayen, J.-F.

    2014-10-01

    We report on the fabrication and characterization of vertical spin-valve structures using a thick epitaxial MgO barrier as spacer layer and a graphene-passivated Ni film as bottom ferromagnetic electrode. The devices show robust and scalable tunnel magnetoresistance, with several changes of sign upon varying the applied bias voltage. These findings are explained by a model of phonon-assisted transport mechanisms that relies on the peculiarity of the band structure and spin density of states at the hybrid graphene|Ni interface.

  18. All-optical switching of magnetoresistive devices using telecom-band femtosecond laser

    Science.gov (United States)

    He, Li; Chen, Jun-Yang; Wang, Jian-Ping; Li, Mo

    2015-09-01

    Ultrafast all-optical switching of the magnetization of various magnetic systems is an intriguing phenomenon that can have tremendous impact on information storage and processing. Here, we demonstrate all-optical switching of GdFeCo alloy films using a telecom-band femtosecond fiber laser. We further fabricate Hall cross devices and electrically readout all-optical switching by measuring anomalous Hall voltage changes. The use of a telecom laser and the demonstrated all-optical switching of magnetoresistive devices represent the first step toward integration of opto-magnetic devices with mainstream photonic devices to enable novel optical and spintronic functionalities.

  19. Two-dimensional salt and temperature DNA denaturation analysis using a magnetoresistive sensor

    DEFF Research Database (Denmark)

    Rizzi, Giovanni; Dufva, Martin; Hansen, Mikkel Fougt

    2017-01-01

    . The results demonstrate that concentration melting provides an attractive alternative to temperature melting in on-chip DNA denaturation experiments and further show that the magnetoresistive platform is attractive due to its low cross-sensitivity to temperature and liquid composition....... temperature as well as salt concentration. The salt concentration melting curves were found to be more reliable than temperature melting curves. We performed a two-dimensional mapping of the melting profiles of a target to probes targeting its wild type (WT) and mutant type (MT) variants in the temperature...

  20. Effects of interface electric field on the magnetoresistance in spin devices

    Energy Technology Data Exchange (ETDEWEB)

    Tanamoto, T., E-mail: tetsufumi.tanamoto@toshiba.co.jp; Ishikawa, M.; Inokuchi, T.; Sugiyama, H.; Saito, Y. [Advanced LSI Technology Laboratory Corporate Research and Development Center, Toshiba Corporation 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582 (Japan)

    2014-04-28

    An extension of the standard spin diffusion theory is presented by using a quantum diffusion theory via a density-gradient (DG) term that is suitable for describing interface quantum tunneling phenomena. The magnetoresistance (MR) ratio is greatly modified by the DG term through an interface electric field. We have also carried out spin injection and detection measurements using four-terminal Si devices. The local measurement shows that the MR ratio changes depending on the current direction. We show that the change of the MR ratio depending on the current direction comes from the DG term regarding the asymmetry of the two interface electronic structures.

  1. Effects of interface electric field on the magnetoresistance in spin devices

    Science.gov (United States)

    Tanamoto, T.; Ishikawa, M.; Inokuchi, T.; Sugiyama, H.; Saito, Y.

    2014-04-01

    An extension of the standard spin diffusion theory is presented by using a quantum diffusion theory via a density-gradient (DG) term that is suitable for describing interface quantum tunneling phenomena. The magnetoresistance (MR) ratio is greatly modified by the DG term through an interface electric field. We have also carried out spin injection and detection measurements using four-terminal Si devices. The local measurement shows that the MR ratio changes depending on the current direction. We show that the change of the MR ratio depending on the current direction comes from the DG term regarding the asymmetry of the two interface electronic structures.

  2. Hydrodynamic theory of thermoelectric transport and negative magnetoresistance in Weyl semimetals.

    Science.gov (United States)

    Lucas, Andrew; Davison, Richard A; Sachdev, Subir

    2016-08-23

    We present a theory of thermoelectric transport in weakly disordered Weyl semimetals where the electron-electron scattering time is faster than the electron-impurity scattering time. Our hydrodynamic theory consists of relativistic fluids at each Weyl node, coupled together by perturbatively small intervalley scattering, and long-range Coulomb interactions. The conductivity matrix of our theory is Onsager reciprocal and positive semidefinite. In addition to the usual axial anomaly, we account for the effects of a distinct, axial-gravitational anomaly expected to be present in Weyl semimetals. Negative thermal magnetoresistance is a sharp, experimentally accessible signature of this axial-gravitational anomaly, even beyond the hydrodynamic limit.

  3. Giant magnetoresistance effect in Ni buffered Co/Cu/Co sandwich

    Institute of Scientific and Technical Information of China (English)

    LI; Tie(李铁)

    2002-01-01

    The effects of Ni buffer layer on the giant magnetoresistance structure of Co/Cu/Co sandwich are investigated systematically in this paper.It is found that Ni buffer layer can induce the crystallization of the lower Ni/Co layer and produce small coercivity,thus enlarging the difference in the magnetic behavior between the two magnetic layers in the sandwich.Moreover,the use of the Ni buffer layer can also improve the interface flatness in the sandwich.All these factors enhance the sensitivity of the Ni buffered sandwich.``

  4. Magnetoresistance peculiarities and magnetization of materials with two kinds of superconducting inclusions

    Directory of Open Access Journals (Sweden)

    Shevtsova O. N.

    2015-03-01

    Full Text Available Low-temperature properties of a crystal containing type I superconducting inclusions of two different materials have been studied. In the approximation assuming that the inclusions size is much smaller than the coherence length/penetration depth of the magnetic field, the theory of magnetoresistance of a crystal containing spherical superconducting inclusions of two different materials has been developed, and magnetization of crystals has been calculated. The obtained results can be used for correct explanation of the low temperature conductivity in binary and more complex semiconductors, in which precipitation of the superconducting phase is possible during the technological processing or under external impact.

  5. Non-monotonic magnetoresistance of two-dimensional electron systems in the ballistic regime

    OpenAIRE

    Kuntsevich, A. Yu.; Minkov, G. M.; Sherstobitov, A. A.; Pudalov, V. M.

    2009-01-01

    We report experimental observations of a novel magnetoresistance (MR) behavior of two-dimensional electron systems in perpendicular magnetic field in the ballistic regime, for k_BT\\tau/\\hbar>1. The MR grows with field and exhibits a maximum at fields B>1/\\mu, where \\mu is the electron mobility. As temperature increases the magnitude of the maximum grows and its position moves to higher fields. This effect is universal: it is observed in various Si- and GaAs- based two-dimensional electron sys...

  6. Effect of Hafnium Impurities on the Magnetoresistance of {YBa}2{Cu}3{O}_{7-δ }

    Science.gov (United States)

    Savich, S. V.; Samoylov, A. V.; Kamchatnaya, S. N.; Goulatis, I. L.; Vovk, R. V.; Chroneos, A.; Solovjov, A. L.; Omelchenko, L. V.

    2017-02-01

    In the present study, we investigate the influence of the hafnium (Hf) impurities on the magnetoresistance of {YBa}2{Cu}3{O}_{7-δ } ceramic samples in the temperature interval of the transition to the superconducting state in constant magnetic field up to 12 T. The cause of the appearance of low- temperature "tails" (paracoherent transitions) on the resistive transitions, corresponding to different phase regimes of the vortex matter state is discussed. At temperatures higher than the critical temperature ( T > T_c), the temperature dependence of the excess paraconductivity can be described within the Aslamazov-Larkin theoretical model of the fluctuation conductivity for layered superconductors.

  7. Bias dependent inversion of tunneling magnetoresistance in Fe/GaAs/Fe tunnel junctions

    OpenAIRE

    Moser, J.; Zenger, M.; Gerl, C.; Schuh, D.; Meier, R.; Chen, P.; Bayreuther, G.; Wegscheider, W.; Weiss, D; Lai, C. -H.; Huang, R. -T.; Kosuth, M.; Ebert, H.

    2006-01-01

    We investigated spin dependent transport through Fe/GaAs/Fe tunnel junctions. The tunneling magnetoresistance effect (TMR) was probed for different types of Fe/GaAs interfaces. For interfaces cleaned by hydrogen plasma the TMR effect is increased and observable at room temperature. If an epitaxial Fe/GaAs(001) interface is involved, the tunnel junction exhibits a bias dependent inversion of the TMR effect. This is a first experimental signature for band structure effects at a Fe/GaAs interfac...

  8. Uniaxial magnetic anisotropy induced low field anomalous anisotropic magnetoresistance in manganite thin films

    Directory of Open Access Journals (Sweden)

    Zhaoliang Liao

    2014-09-01

    Full Text Available La2/3Sr1/3MnO3 films with uniaxial magnetic anisotropy were coherently grown on NdGaO3 (110 substrates. The uniaxial anisotropy has strong effect on magnetoresistance (MR. A positive MR was observed when the current is along magnetic easy axis under the current-field perpendicular geometry. In contrast, no positive MR is observed when current is along the magnetic hard axis regardless of the field direction. Our analysis indicates that the anomalous anisotropic MR effect arises from the uniaxial magnetic anisotropy caused stripe domains which contribute to strong anisotropic domain wall resistivity.

  9. Disentangling interface and bulk contributions to the anisotropic magnetoresistance in Pt/Co/Pt sandwiches

    Science.gov (United States)

    Kobs, André; Oepen, Hans Peter

    2016-01-01

    We report on interfacial contributions to the anisotropic magnetoresistance (AMR) in Co layers sandwiched between Pt. Utilizing the Fuchs-Sondheimer formalism interface contributions can be separated from bulklike AMR. We demonstrate that for all-metal systems interfacial AMR is also present when varying the magnetization within the film plane. This interfacial in-plane AMR is two times smaller than the contribution that arises when the magnetization is varied within the plane perpendicular to the current direction. This finding is in contrast to the spin Hall MR found for ferromagnetic insulator/Pt bilayers revealing the existence of different MR effects at the interfaces of Pt with conducting and insulating ferromagnets.

  10. Spin-Spin Interactions in Organic Magnetoresistance Probed by Angle-Dependent Measurements

    Science.gov (United States)

    Wagemans, W.; Schellekens, A. J.; Kemper, M.; Bloom, F. L.; Bobbert, P. A.; Koopmans, B.

    2011-05-01

    The dependence of organic magnetoresistance (OMAR) on the orientation of the magnetic field has been investigated. In contrast with previous claims, a finite and systematic change in magnitude is observed when the orientation of the field is changed with respect to the sample. It is demonstrated that, to explain these effects, spin-spin interactions have to be included in the models previously suggested for OMAR. Dipole coupling and exchange coupling are introduced in combination with either an anisotropy of the orientation of the spin pairs or an anisotropy in the hyperfine fields.

  11. Strong temperature dependence of extraordinary magnetoresistance correlated to mobility in a two-contact device

    KAUST Repository

    Sun, Jian

    2012-02-21

    A two-contact extraordinary magnetoresistance (EMR) device has been fabricated and characterized at various temperatures under magnetic fields applied in different directions. Large performance variations across the temperature range have been found, which are due to the strong dependence of the EMR effect on the mobility. The device shows the highest sensitivity of 562ω/T at 75 K with the field applied perpendicularly. Due to the overlap between the semiconductor and the metal shunt, the device is also sensitive to planar fields but with a lower sensitivity of about 20 to 25% of the one to perpendicular fields. © 2012 The Japan Society of Applied Physics.

  12. Tunneling Anisotropic Magnetoresistance in Co/AlOx/Au Tunnel Junctions

    CERN Document Server

    Liu, R S; Canali, C M; Samuelson, L; Pettersson, H

    2008-01-01

    We observe spin-valve-like effects in nano-scaled thermally evaporated Co/AlOx/Au tunnel junctions. The tunneling magnetoresistance is anisotropic and depends on the relative orientation of the magnetization direction of the Co electrode with respect to the current direction. We attribute this effect to a two-step magnetization reversal and an anisotropic density of states resulting from spin-orbit interaction. The results of this study points to future applications of novel spintronics devices involving only one ferromagnetic layer.

  13. SEMICONDUCTOR PHYSICS: Phonon-induced magnetoresistance oscillations in a high-mobility quantum well

    Science.gov (United States)

    Qisheng, Zhou; Juncheng, Cao; Ming, Qi; Xiaolin, Lei

    2010-09-01

    We examine the temperature dependence of acoustic-phonon-induced magnetoresistance oscillations in a high-mobility GaAs-based quantum well with conventional transverse and longitudinal phonon modes, using a model in which the temperature increase of the Landau level broadening or the single-particle scattering rate 1/τs is attributed to the enhancement of electron-phonon scattering with rising temperature. The non-monotonic temperature behavior, showing an optimal temperature at which a given order of oscillation amplitude exhibits a maximum and the shift of the main resistance peak to higher magnetic field with rising temperature, is produced, in agreement with recent experimental findings.

  14. Calculation of Resistivity of the Insulating Layer in Tunnelling-Magnetoresistive Head by Fast Green Function Method

    Institute of Scientific and Technical Information of China (English)

    WEI Dan; PIAO Kun; QIN Jian; DONG Zhong

    2005-01-01

    @@ We calculate the resistivity of the insulating layer in a tunnelling-magnetoresistive (TMR) magnetic head byusing the Landauer-Büttiker formula with a fast Green function method, where a recursive process with a faster simulation speed and higher accuracy is carried out to substitute the inversion of Green's matrix. A tight-binding model with an energy barrier △ E is utilized to simulate the magnetoresistive tunnelling junction in the TMR head. The resistivity of the insulating layer is 2.6 × 105μΩcm with two oxygen-ion layers and △E = 2.5 eV, which agrees with the experimental data.

  15. Reduced Magneto-Resistivity of a Rare-Earth Crystalline and the Degeneracy Removals of Its Crystal-Field Levels

    Institute of Scientific and Technical Information of China (English)

    LIU Zhao-Sen

    2007-01-01

    A theoretical approach is generalized and employed to calculate the magneto-resistivity of a rare-earth crystalline (CeAl2) with degenerate ground crystal-field (CF) level in the presence of external fields. The calculated results show that when a magnetic field is applied in the c-direction, the magneto-resistivity may be reduced by more than 90% in certain cases in comparison with the pure CF contribution at the same temperature, demonstrating the strong effects of the degeneracy removals of the CF levels on the magnetic resistivity.

  16. Tunnel magnetoresistance in thermally robust Mo/CoFeB/MgO tunnel junction with perpendicular magnetic anisotropy

    Directory of Open Access Journals (Sweden)

    B. Fang

    2015-06-01

    Full Text Available We report on tunnel magnetoresistance and electric-field effect in the Mo buffered and capped CoFeB/MgO magnetic tunnel junctions (MTJs with perpendicular magnetic anisotropy. A large tunnel magnetoresistance of 120% is achieved. Furthermore, this structure shows greatly improved thermal stability and stronger electric-field-induced modulation effect in comparison with the Ta/CoFeB/MgO-based MTJs. These results suggest that the Mo-based MTJs are more desirable for next generation spintronic devices.

  17. The Phase Transformations and Magnetoresistive Properties of Diluted Film Solid Solutions Based on Fe and Ge Atoms

    Directory of Open Access Journals (Sweden)

    O.V. Vlasenko

    2014-06-01

    Full Text Available In the article, the structure, phase composition and magnetoresistive properties of single- and three-layer films based on Fe and Ge were studied. It is established that in such films eutectic is formed based on diluted solid solutions of Ge atoms in -Fe layers and of Fe atoms in -Ge layers at the total concentration of Ge atoms from 3 to 20 at.% in the temperature range of 300-870 K. It is shown that magnetoresistive properties of the films with eutectic composition are not significantly different from the properties of -Fe films.

  18. Balistic magnetoresistance in nanocontacts electrochemically grown between macro- and microscopic ferromagnetic electrodes

    Science.gov (United States)

    García, N.; Qiang, G. G.; Saveliev, I. G.

    2002-03-01

    Our results prove the local origin of magnetoresistance in electrochemically deposited Ni nanocontacts. Experiments have been done using a complex setup for both in situ growth and ballistic magnetoresistance (BMR) measurements. Nanocontacts have been grown between two macroscopic Ni wires. In situ experiments with variation of the nanocontact diameter from 3 to 20 nm have been done using the same pair of wires. BMR values from 0.5% to 100% have been observed but no correlation of BMR value with the sample resistance, i.e., with the nanocontact cross section, has been found. These results show that the BMR in the nanometric size contact is determined by local geometrical and magnetic structures near the nanocontact rather than by the contact cross section itself. The hypothesis of existence of the intrinsic nonmagnetic dead layer in the ferromagnetic nanocontact is proposed to account for the BMR properties of the nanometric size contacts. Additionally, we report a BMR value of 200% in a Ni nanocontact (5 nm diameter) electrochemically grown between two nonmagnetic macroscopic gold wires. An external magnetic field has been used during the electrochemical deposition to fix the easy magnetic axis of the deposited Ni layer.

  19. Large linear magnetoresistance in heavily-doped Nb:SrTiO3 epitaxial thin films

    Science.gov (United States)

    Jin, Hyunwoo; Lee, Keundong; Baek, Seung-Hyub; Kim, Jin-Sang; Cheong, Byung-Ki; Park, Bae Ho; Yoon, Sungwon; Suh, B. J.; Kim, Changyoung; Seo, S. S. A.; Lee, Suyoun

    2016-10-01

    Interaction between electrons has long been a focused topic in condensed-matter physics since it has led to the discoveries of astonishing phenomena, for example, high-Tc superconductivity and colossal magnetoresistance (CMR) in strongly-correlated materials. In the study of strongly-correlated perovskite oxides, Nb-doped SrTiO3 (Nb:SrTiO3) has been a workhorse not only as a conducting substrate, but also as a host possessing high carrier mobility. In this work, we report the observations of large linear magnetoresistance (LMR) and the metal-to-insulator transition (MIT) induced by magnetic field in heavily-doped Nb:STO (SrNb0.2Ti0.8O3) epitaxial thin films. These phenomena are associated with the interplay between the large classical MR due to high carrier mobility and the electronic localization effect due to strong spin-orbit coupling, implying that heavily Nb-doped Sr(Nb0.2Ti0.8)O3 is promising for the application in spintronic devices.

  20. Origin of the Magnetoresistance in Oxide Tunnel Junctions Determined through Electric Polarization Control of the Interface

    Directory of Open Access Journals (Sweden)

    Hisashi Inoue

    2015-11-01

    Full Text Available The observed magnetoresistance (MR in three-terminal (3T ferromagnet-nonmagnet (FM-NM tunnel junctions has historically been assigned to ensemble dephasing (Hanle effect of a spin accumulation, thus offering a powerful approach for characterizing the spin lifetime of candidate materials for spintronics applications. However, due to crucial discrepancies of the extracted spin parameters with known materials properties, this interpretation has come under intense scrutiny. By employing epitaxial artificial dipoles as the tunnel barrier in oxide heterostructures, the band alignments between the FM and NM channels can be controllably engineered, providing an experimental platform for testing the predictions of the various spin accumulation models. Using this approach, we have been able to definitively rule out spin accumulation as the origin of the 3T MR. Instead, we assign the origin of the magnetoresistance to spin-dependent hopping through defect states in the barrier, a fundamental phenomenon seen across diverse systems. A theoretical framework is developed that can account for the signal amplitude, linewidth, and anisotropy.

  1. Angle-dependent magnetoresistance and quantum oscillations in high-mobility semimetal LuPtBi

    KAUST Repository

    Xu, Guizhou

    2017-03-14

    The recent discovery of ultrahigh mobility and large positive magnetoresistance in topologically non-trivial Half-Heusler semimetal LuPtBi provides a unique playground for studying exotic physics and significant perspective for device applications. As an fcc-structured electron-hole-compensated semimetal, LuPtBi theoretically exhibits six symmetrically arranged anisotropic electron Fermi pockets and two nearly-spherical hole pockets, offering the opportunity to explore the physics of Fermi surface with a simple angle-related magnetotransport properties. In this work, through the angle-dependent transverse magnetoresistance measurements, in combination with high-field SdH quantum oscillations, we achieved to map out a Fermi surface with six anisotropic pockets in the high-temperature and low-field regime, and furthermore, identify a possible magnetic field driven Fermi surface change at lower temperatures. Reasons account for the Fermi surface change in LuPtBi are discussed in terms of the field-induced electron evacuation due to Landau quantization.

  2. Correlation between vacancies and magnetoresistance changes in FM manganites using the Monte Carlo method

    Science.gov (United States)

    Agudelo-Giraldo, J. D.; Restrepo-Parra, E.; Restrepo, J.

    2015-10-01

    The Metropolis algorithm and the classical Heisenberg approximation were implemented by the Monte Carlo method to design a computational approach to the magnetization and resistivity of La2/3Ca1/3MnO3, which depends on the Mn ion vacancies as the external magnetic field increases. This compound is ferromagnetic, and it exhibits the colossal magnetoresistance (CMR) effect. The monolayer was built with L×L×d dimensions, and it had L=30 umc (units of magnetic cells) for its dimension in the x-y plane and was d=12 umc in thickness. The Hamiltonian that was used contains interactions between first neighbors, the magnetocrystalline anisotropy effect and the external applied magnetic field response. The system that was considered contains mixed-valence bonds: Mn3+eg'-O-Mn3+eg, Mn3+eg-O-Mn4+d3 and Mn3+eg'-O-Mn4+d3. The vacancies were placed randomly in the sample, replacing any type of Mn ion. The main result shows that without vacancies, the transitions TC (Curie temperature) and TMI (metal-insulator temperature) are similar, whereas with the increase in the vacancy percentage, TMI presented lower values than TC. This situation is caused by the competition between the external magnetic field, the vacancy percentage and the magnetocrystalline anisotropy, which favors the magnetoresistive effect at temperatures below TMI. Resistivity loops were also observed, which shows a direct correlation with the hysteresis loops of magnetization at temperatures below TC.

  3. Multilevel Thermally Assisted Magnetoresistive Random-Access Memory Based on Exchange-Biased Vortex Configurations

    Science.gov (United States)

    de Araujo, C. I. L.; Alves, S. G.; Buda-Prejbeanu, L. D.; Dieny, B.

    2016-08-01

    A concept of multilevel thermally assisted magnetoresistive random-access memory is proposed and investigated by micromagnetic simulations. The storage cells are magnetic tunnel junctions in which the storage layer is exchange biased and in a vortex configuration. The reference layer is an unpinned soft magnetic layer. The stored information is encoded via the position of the vortex core in the storage layer. This position can be varied along two degrees of freedom: the radius and the in-plane angle. The information is read out from the amplitude and phase of the tunnel magnetoresistance signal obtained by applying a rotating field on the cell without heating the cell. Various configurations are compared in which the soft reference layer consists of either a simple ferromagnetic layer or a synthetic antiferromagnetic sandwich (SAF). Among those, the most practical one comprises a SAF reference layer in which the magnetostatic interaction between the SAF and storage layer is minimized. This type of cell should allow one to store at least 40 different states per cell representing more than five bits per cell.

  4. Realization of resistive switching and magnetoresistance in ZnO/ZnO-Co composite materials

    Science.gov (United States)

    Li, Xiaoli; Jia, Juan; Li, Yanchun; Bai, Yuhao; Li, Jie; Shi, Yana; Wang, Lanfang; Xu, Xiaohong

    2016-09-01

    Combining resistive switching and magnetoresistance in a system exhibits great potential for application in multibit nonvolatile data storage. It is in significance and difficulty to seek a material with resistances that can be stably switched at different resistance states modulated by an electrical field and a magnetic field. In this paper, we propose a novel electrode/ZnO/ZnO-Co/electrode device in which the storage layer combines a nanostructured ZnO-Co layer and a ZnO layer. The device exhibits bipolar resistive switching characteristics, which can be explained by the accumulation of oxygen vacancies due to the migration of oxygen ions by external electrical stimuli and the contribution of Co particles in the ZnO-Co layer. Moreover, the magnetoresistance effect at room temperature can be observed in the device at high and low resistance states. Therefore, through electrical and magnetic control, four resistance states are achieved in this system, presenting a new possibility towards enhancing data densities by many folds.

  5. Negative to positive crossover of the magnetoresistance in layered WS2

    Science.gov (United States)

    Zhang, Yangwei; Ning, Honglie; Li, Yanan; Liu, Yanzhao; Wang, Jian

    2016-04-01

    The discovery of graphene ignited intensive investigation of two-dimensional materials. A typical two-dimensional material, transition metal dichalcogenide (TMDC), attracts much attention because of its excellent performance in field effect transistor measurements and applications. Particularly, when TMDC reaches the dimension of a few layers, a wide range of electronic and optical properties can be detected that are in striking contrast to bulk samples. In this letter, we synthesized WS2 single-crystal nanoflakes using physical vapor deposition and carried out a series of measurements of the contact resistance and magnetoresistance. Focused ion beam (FIB) technology was applied to deposit Pt electrodes on the WS2 flakes, and the FIB-deposited contacts exhibited linear electrical characteristics. Resistance versus temperature measurements showed similar Mott variable range hopping behavior in different magnetic fields. Additionally, a temperature-modulated negative-to-positive magnetoresistance transition was observed. Our work reveals the magnetotransport characteristics of WS2 flakes, which may stimulate further studies of the properties of TMDC and its corresponding electronic and optoelectronic applications.

  6. ac and dc conductivity, magnetoresistance, and scaling in cellular percolation systems

    Science.gov (United States)

    Chiteme, C.; McLachlan, D. S.

    2003-01-01

    Percolation phenomena, which include the ac and dc conductivity, dielectric constant, and magnetoresistance, are studied in a series of seven cellular composites, consisting of small conductor particles embedded on the surface of larger insulator particles. Carbon black (ground and unground), graphite, graphite boron-nitride, niobium carbide, nickel, and magnetite (Fe3O4) powders were the conducting components with talc-wax powder as the common insulating component. The dc conductivity results were fitted to the standard percolation equations and to a two-exponent phenomenological equation, which yields the percolation parameters σi, σc, s, t, and φc in the ideal limits. Both universal and nonuniversal values of s and t are measured in the systems. Close to the percolation threshold (φc), the ac conductivity (σmr) and the dielectric constant (ɛmr) are found to scale as σmr∝ωu and ɛmr∝ω-v. All these exponents are examined using the most recent theories and compared with previous studies. The dielectric constant exponent (s'), from ɛmr∝(φc-φ)- s', is shown to be frequency dependent. The exponents gc (magnetoresistance) and tm (from magnetoconductivity) in composites are not yet clearly understood but these and previous results show that tm>t. dc scaling is shown in a real composite comprising Fe3O4 and talc wax.

  7. Dielectric barrier formation and tunneling magnetoresistance effect in strontium iron molybdate

    Science.gov (United States)

    Dem'yanov, S. E.; Kalanda, N. A.; Kovalev, L. V.; Avdeev, M. V.; Zheludkevich, M. L.; Garamus, V. M.; Willumeit, R.

    2013-06-01

    A comparative X-ray diffraction study of the initial single-phase metal-oxide compound-strontium iron molybdate Sr2FeMoO6 - δ (SFMO)-and that subjected to additional isothermal annealing shows that this heat treatment leads to the appearance of a SrMoO4 (SMO) phase. Small-angle neutron scattering measurements indicate that the SMO phase forms a dielectric shell surrounding SFMO grains, which has a characteristic thickness of 2-4 nm and extends above 120 nm. The character of the temperature dependence of the electric resistance corresponds to the metal-type conduction in single-phase SFMO and changes to a semiconductor type in the material with SMO dielectric shells, which is evidence of a tunneling mechanism of charge transfer. This conclusion is confirmed by an increase in the absolute value of the negative magnetoresistance of SFMO due to the appearance of a tunneling magnetoresistance component of the same sign.

  8. Electrical Transport and Magnetoresistance in Single-Wall Carbon Nanotubes Films

    Directory of Open Access Journals (Sweden)

    Vitaly KSENEVICH

    2014-06-01

    Full Text Available Electrical transport properties and magnetoresistance of single-wall carbon nanotubes (SWCNT films were investigated within temperature range (2 – 300 K and in magnetic fields up to 8 T. A crossover between metallic (dR/dT > 0 and non-metallic (dR/dT < 0 temperature dependence of the resistance as well as low-temperature saturation of the resistance in high bias regime indicated on the diminishing of role of the contact barriers between individual nanotubes essential for the charge transport in SWCNT arrays. The magnetoresistance (MR data demonstrated influence of weak localization and electron-electron interactions on charge transport properties in SWCNT films. The low-field negative MR with positive upturn was observed at low temperatures. At T > 10 K only negative MR was observed in the whole range of available magnetic fields. The negative MR can be approximated using 1D weak localization (WL model. The low temperature positive MR is induced by contribution from electron-electron interactions. DOI: http://dx.doi.org/10.5755/j01.ms.20.2.6311

  9. Interplanar coupling-dependent magnetoresistivity in high-purity layered metals

    Science.gov (United States)

    Kikugawa, N.; Goswami, P.; Kiswandhi, A.; Choi, E. S.; Graf, D.; Baumbach, R. E.; Brooks, J. S.; Sugii, K.; Iida, Y.; Nishio, M.; Uji, S.; Terashima, T.; Rourke, P.M.C.; Hussey, N. E.; Takatsu, H.; Yonezawa, S.; Maeno, Y.; Balicas, L.

    2016-01-01

    The magnetic field-induced changes in the conductivity of metals are the subject of intense interest, both for revealing new phenomena and as a valuable tool for determining their Fermi surface. Here we report a hitherto unobserved magnetoresistive effect in ultra-clean layered metals, namely a negative longitudinal magnetoresistance that is capable of overcoming their very pronounced orbital one. This effect is correlated with the interlayer coupling disappearing for fields applied along the so-called Yamaji angles where the interlayer coupling vanishes. Therefore, it is intrinsically associated with the Fermi points in the field-induced quasi-one-dimensional electronic dispersion, implying that it results from the axial anomaly among these Fermi points. In its original formulation, the anomaly is predicted to violate separate number conservation laws for left- and right-handed chiral (for example, Weyl) fermions. Its observation in PdCoO2, PtCoO2 and Sr2RuO4 suggests that the anomaly affects the transport of clean conductors, in particular near the quantum limit. PMID:27020134

  10. Superconductivity and normal state magnetoresistance in superconducting FeSe:Sb

    Institute of Scientific and Technical Information of China (English)

    2010-01-01

    We prepared a series of β-FeSe samples with a nominal composition of Fe1.11Se1-xSbx(0≤x≤0.5).The X-ray diffraction,transport and magnetic measurements were performed on these samples to investigate the structure,the superconducting properties and the normal state transport and magnetic properties.Although the X-ray diffraction data suggested that Sb atoms were not incorporated into the β-FeSe phase,the transport data showed observable changes of superconductivity,normal state resistivity and magnetoresistance.This was represented by the increase in the superconducting transition temperature and the upper critical field.Also,for the samples with a low level of Sb content,a clear decrease of the normal state resistivity and a substantial increase of the residual resistance ratio were observed.Furthermore,the samples showed a significant increase of the normal state magnetoresistance that appeared not to follow the Kohler’s rule.The results were discussed in the frame of reduction of excess Fe at interstitial sites of β-FeSe.

  11. Magnetoresistivity and microstructure of YBa2Cu3Oy prepared using planetary ball milling

    Science.gov (United States)

    Hamrita, A.; Ben Azzouz, F.; Madani, A.; Ben Salem, M.

    2012-01-01

    We have studied the microstructure and the magnetoresistivity of polycrystalline YBa2Cu3Oy (YBCO or Y-123 for brevity) embedded with nanoparticles of Y-deficient YBCO, generated by the planetary ball milling technique. Bulk samples were synthesized from a precursor YBCO powder, which was prepared from commercial high purity Y2O3, Ba2CO3 and CuO via a one-step annealing process in air at 950 °C. After planetary ball milling of the precursor, the powder was uniaxially pressed and subsequently annealed at 950 °C in air. Phase analysis by X-ray diffraction (XRD), granular structure examination by scanning electron microscopy (SEM), microstructure investigation by transmission electron microscopy (TEM) coupled with energy dispersive X-ray spectroscopy (EDXS) were carried out. TEM analyses show that nanoparticles of Y-deficient YBCO, generated by ball milling, are embedded in the superconducting matrix. Electrical resistance as a function of temperature, ρ(T), revealed that the zero resistance temperature, Tco, is 84.5 and 90 K for the milled and unmilled samples respectively. The milled ceramics exhibit a large magnetoresistance in weak magnetic fields at liquid nitrogen temperature. This attractive effect is of high significance as it makes these materials promising candidates for practical application in magnetic field sensor devices.

  12. Multidimensional Nature of Molecular Organic Conductors Revealed by Angular Magnetoresistance Oscillations

    Energy Technology Data Exchange (ETDEWEB)

    Pashupati Dhakal, Harukazu Yoshino, Jeong-Il Oh, Koichi Kikuchi, Michael J. Naughton

    2012-09-01

    Angle-dependent magnetoresistance experiments on organic conductors exhibit a wide range of angular oscillations associated with the dimensionality and symmetry of the crystal structure and electron energy dispersion. In particular, characteristics associated with 1, 2, and 3-dimensional electronic motion are separately revealed when a sample is rotated through different crystal planes in a magnetic field. Originally discovered in the TMTSF-based conductors, these effects are particularly pronounced in the related system (DMET){sub 2}I{sub 3}. Here, experimental and computational results for magnetoresistance oscillations in this material, over a wide range of magnetic field orientations, are presented in such a manner as to uniquely highlight this multidimensional behavior. The calculations employ the Boltzmann transport equation that incorporates the system's triclinic crystal structure, which allows for accurate estimates of the transfer integrals along the crystallographic axes, verifying the 1D, 2D and 3D nature of (DMET){sub 2}I{sub 3}, as well as crossovers between dimensions in the electronic behavior.

  13. Strongly angle-dependent magnetoresistance in Weyl semimetals with long-range disorder

    Science.gov (United States)

    Behrends, Jan; Bardarson, Jens H.

    2017-08-01

    The chiral anomaly in Weyl semimetals states that the left- and right-handed Weyl fermions, constituting the low energy description, are not individually conserved, resulting, for example, in a negative magnetoresistance in such materials. Recent experiments see strong indications of such an anomalous resistance response; however, with a response that at strong fields is more sharply peaked for parallel magnetic and electric fields than expected from simple theoretical considerations. Here, we uncover a mechanism, arising from the interplay between the angle-dependent Landau-level structure and long-range scalar disorder, that has the same phenomenology. In particular, we analytically show, and numerically confirm, that the internode scattering time decreases exponentially with the angle between the magnetic field and the Weyl node separation in the large field limit, while it is insensitive to this angle at weak magnetic fields. Since, in the simplest approximation, the internode scattering time is proportional to the anomaly-related conductivity, this feature may be related to the experimental observations of a sharply peaked magnetoresistance.

  14. Long phase coherence length and anisotropic magnetoresistance in MgZnO thin film

    Energy Technology Data Exchange (ETDEWEB)

    Lv, Meng; Xu, Yonggang; Yu, Guolin, E-mail: yug@mail.sitp.ac.cn; Lin, Tie; Hu, Gujin; Chu, Junhao [National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Science, Shanghai 200083 (China); Wang, Hao; Zhang, Huahan, E-mail: huahan@xmu.edu.cn [Department of Physics, Xiamen University, Xiamen 361005 (China); Dai, Ning [National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Science, Shanghai 200083 (China); Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026 (China); Jiangsu Collaborative Innovation Center of Photovoltaic Science and Engineering, Changzhou 213164 (China)

    2015-04-21

    We comprehensively investigate magnetotransport properties of MgZnO thin film grown on ZnO substrate by molecular-beam epitaxy. We measure the weak localization effect and extract the electron phase coherence length by fitting to a three-dimensional weak localization theory and by analyzing the different changing rate of the magnetoresistance, results of which are in good agreement with each other. The phase coherence length ranges from 38.4±1    nm at 50 K to 99.8±3.6 nm at 1.4  K, almost the same as that of ZnO nanoplates and In-doped ZnO nanowires, and its temperature dependence is found to scale as T{sup −3/4}. Meanwhile, we study the anisotropic magnetoresistance resulting from the geometric effect as well as the Lorentz force induced path-length effect, which will be enhanced in higher magnetic fields.

  15. Influence of sample width on the magnetoresistance and planar Hall effect of Co/Cu multilayers

    Science.gov (United States)

    C. Lima, S.; Baibich, M. N.

    2016-01-01

    We have studied Co/Cu multilayers to understand the effect of the sample's width on their magnetoresistance (MR). By keeping constant both the length and the thickness and exploring the widths within the range of usual magnetic domain sizes in those nanostructures, we were able to observe effects on the MR curve, as well as infer linked changes in the magnetization process. Associating MR and Planar Hall Effect (PHE) measurements, coupled to an analysis of the MR plots' symmetry, we were able to establish that, apart from the expected antiferromagnetic coupling, reducing the width forces the magnetization to stay aligned to the current channel, thus inducing more symmetric, closer to model Giant Magnetoresistance (GMR). Also, the sample edges might contribute by adding extra coupling through magnetostatic interaction. The added effects result in a counter-intuitive trend that goes from the near ideal wide samples through intermediate sizes with fairly abrupt changes in MR, and finally to the closer to bell-shaped ideal GMR at narrow widths.

  16. Resistivity plateau and extremely large magnetoresistance in NbAs2 and TaAs2

    Science.gov (United States)

    Wang, Yi-Yan; Yu, Qiao-He; Guo, Peng-Jie; Liu, Kai; Xia, Tian-Long

    2016-07-01

    In topological insulators (TIs), metallic surface conductance saturates the insulating bulk resistance with decreasing temperature, resulting in resistivity plateau at low temperatures as a transport signature originating from metallic surface modes protected by time reversal symmetry (TRS). Such a characteristic has been found in several materials including Bi2Te2Se , SmB6 etc. Recently, similar behavior has been observed in metallic compound LaSb, accompanying an extremely large magnetoresistance (XMR). Shubnikov-de Hass (SdH) oscillation at low temperatures further confirms the metallic behavior of the plateau region under magnetic fields. LaSb [Tafti et al., Nat. Phys. 12, 272 (2015), 10.1038/nphys3581] has been proposed by the authors as a possible topological semimetal (TSM), while negative magnetoresistance is absent at this moment. Here, high quality single crystals of NbAs2/TaAs2 with inversion symmetry have been grown, and the resistivity under magnetic field is systematically investigated. Both of them exhibit metallic behavior under zero magnetic field, and a metal-to-insulator transition occurs when a nonzero magnetic field is applied, resulting in XMR (1.0 ×105% for NbAs2 and 7.3 ×105% for TaAs2 at 2.5 K and 14 T). With temperature decreased, a resistivity plateau emerges after the insulatorlike regime, and SdH oscillation has also been observed in NbAs2 and TaAs2.

  17. On-chip magnetic bead-based DNA melting curve analysis using a magnetoresistive sensor

    Energy Technology Data Exchange (ETDEWEB)

    Rizzi, Giovanni, E-mail: giori@nanotech.dtu.dk; Østerberg, Frederik W.; Henriksen, Anders D.; Dufva, Martin; Hansen, Mikkel F., E-mail: mikkel.hansen@nanotech.dtu.dk

    2015-04-15

    We present real-time measurements of DNA melting curves in a chip-based system that detects the amount of surface-bound magnetic beads using magnetoresistive magnetic field sensors. The sensors detect the difference between the amount of beads bound to the top and bottom sensor branches of the differential sensor geometry. The sensor surfaces are functionalized with wild type (WT) and mutant type (MT) capture probes, differing by a single base insertion (a single nucleotide polymorphism, SNP). Complementary biotinylated targets in suspension couple streptavidin magnetic beads to the sensor surface. The beads are magnetized by the field arising from the bias current passed through the sensors. We demonstrate the first on-chip measurements of the melting of DNA hybrids upon a ramping of the temperature. This overcomes the limitation of using a single washing condition at constant temperature. Moreover, we demonstrate that a single sensor bridge can be used to genotype a SNP. - Highlights: • We apply magnetoresistive sensors to study solid-surface hybridization kinetics of DNA. • We measure DNA melting profiles for perfectly matching DNA duplexes and for a single base mismatch. • We present a procedure to correct for temperature dependencies of the sensor output. • We reliably extract melting temperatures for the DNA hybrids. • We demonstrate direct measurement of differential binding signal for two probes on a single sensor.

  18. Surfactant influence on interface roughness and magnetoresistance value in Fe/Cr multilayers

    Energy Technology Data Exchange (ETDEWEB)

    Kąc, M., E-mail: malgorzata.kac@ifj.edu.pl; Polit, A.; Dobrowolska, A.; Zabila, Y.; Krupiński, M.; Marszałek, M.

    2013-09-02

    Effect of interfacial roughness on magnetoresistance (MR) value in Fe/Cr multilayers was studied. The Fe/Cr multilayers were prepared on a MgO(100) substrate by molecular beam deposition technique and doped with Bi and In surfactants. The morphology of the layers, especially the interface structure, was studied using conversion electron Mössbauer spectroscopy (CEMS). CEMS spectra indicate an increase in the width of interfaces of modified samples; this effect is stronger for the sample doped with In. Auger electron spectroscopy shows the segregation of the surfactant to the surface. Magnetic and magnetotransport properties of the samples were studied by the magneto-optic Kerr effect and MR measurements. The observed hysteresis loops confirm in all samples antiferromagnetic arrangement of Fe layers sandwiched between Cr while the value of MR is larger for the doped samples. It was observed that roughening of the interfaces resulted in an increase of the MR effect. - Highlights: • Interface structure of Fe/Cr multilayers was studied by Mössbauer spectroscopy. • Segregating surfactants increased the interface roughness of the doped samples. • All samples, regardless of interface structure, were antiferromagnetically coupled. • The roughening of interfaces resulted in an increase of the magnetoresistance value.

  19. Giant semiclassical magnetoresistance in high mobility TaAs{sub 2} semimetal

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Desheng [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Department of Physics, Center for Optoelectronics Materials and Devices, Zhejiang Sci-Tech University, Hangzhou 310018 (China); Liao, Jian; Yi, Wei; Wang, Xia; Weng, Hongming, E-mail: ygshi@iphy.ac.cn, E-mail: hmweng@iphy.ac.cn; Shi, Youguo, E-mail: ygshi@iphy.ac.cn, E-mail: hmweng@iphy.ac.cn; Li, Yongqing; Dai, Xi; Fang, Zhong [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Li, Peigang [Department of Physics, Center for Optoelectronics Materials and Devices, Zhejiang Sci-Tech University, Hangzhou 310018 (China); Luo, Jianlin [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Collaborative Innovation Center of Quantum Matter, Beijing (China)

    2016-01-25

    We report the observation of colossal positive magnetoresistance (MR) in single crystalline, high mobility TaAs{sub 2} semimetal. The excellent fit of MR by a single quadratic function of the magnetic field B over a wide temperature range (T = 2–300 K) suggests the semiclassical nature of the MR. The measurements of Hall effect and Shubnikov-de Haas oscillations, as well as band structure calculations, suggest that the giant MR originates from the nearly perfectly compensated electrons and holes in TaAs{sub 2}. The quadratic MR can even exceed 1 200 000% at B = 9 T and T = 2 K, which is one of the largest values among those of all known semi-metallic compounds, including the very recently discovered WTe{sub 2} and NbSb{sub 2}. The giant positive magnetoresistance in TaAs{sub 2} not only has a fundamentally different origin from the negative colossal MR observed in magnetic systems but also provides a nice complemental system that will be beneficial for applications in magnetoelectronic devices.

  20. High Dynamic Magnetic Beam Current Measurements by Means of Optimised Magneto-Resistance (MR) Sensor Engineering

    CERN Document Server

    Hape, M; Ricken, W

    2005-01-01

    The GSI-FAIR project (facility for antiprotons and ion research) will comprehend DC currents up to around 5 A in the SIS 100 synchrotron and after bunch compression down to 50 ns pulse length the peak currents will reach up to 100 A. To meet these higher demands of beam current measurements new sensor techniques are foreseen. The measurement device itself will be designed in form of a clip-on ampere-meter. The air gap of the flux concentrator is assumed to be around 5 mm and thus, the estimated maximum field therein is around 30 mT for a beam current of 100 A peak. The resolution of this device is aimed to be 1 mA in beam current, corresponding to a system dynamic of around 105. This high demands of beam current measurement require more sophisticated sensor types than just using a Hall probe. The characteristics of AMR (anisotropic magneto-resistance), GMR (giant magneto-resistance) and GMI (giant magneto-impedance) sensors like hysteresis, linearity and sensitivity have been measured within the magnetic fiel...

  1. Effect of cobalt on the magnetoresistance characteristics of rare-earth doped manganites

    Institute of Scientific and Technical Information of China (English)

    Jiang Kuo; Gong Sheng-Kai

    2009-01-01

    The effect of cobalt-doping on the magnetic, transport and magnetoresistance characteristics of La1-xSrxMnO3 was investigated. The results show that the magnetoelectric property of rare-earth doped manganites is greatly affected by substitution of Co for Mn sites. The Curie temperature as well as the magnetic moment decreases with the increase of doping concentration, and the samples exhibit obvious characteristics of the spin glass state. Moreover,the magnetoresistance is evidently modulated by doping concentration, and the relevant temperature dependence is also suppressed. In addition, low-temperature magnetorcsistance is significantly promoted as doping concentration increases, which renders a value of approximately 50% in the temperature range of 5-200 K and varies within 12.5%. It can be attributed to the effect of spin scattering, induced by cobalt doping, on the itinerant electrons of Mn ions, thus introducing a spin-disorder region into the ferromagnetic region of double-exchange interaction between neighbouring Mn3+ and Mn 4+ ions.

  2. Giant positive magnetoresistance and field-induced metal insulator transition in Cr2NiGa

    Science.gov (United States)

    Pramanick, S.; Dutta, P.; Chatterjee, S.; Giri, S.; Majumdar, S.

    2017-01-01

    We report the magneto-transport properties of the newly synthesized Heusler compound Cr2NiGa which crystallizes in a disordered cubic B2 structure belonging to the Pm\\bar{3} m space group. The sample is found to be paramagnetic down to 2 K with metallic characteristics. On application of a magnetic field, a significantly large increase in resistivity is observed which corresponds to magnetoresistance as high as 112% at 150 kOe of field at the lowest temperature. Most remarkably, the sample shows a negative temperature coefficient of resistivity below about 50 K under the application of field  ⩾80 kOe, signifying a field-induced metal to ‘insulating’ transition. The observed magnetoresistance follows Kohler’s rule below 20 K indicating the validity of the semiclassical model of electronic transport in metals with a single relaxation time. A multi-band model for electronic transport, originally proposed for semimetals, is found to be appropriate to describe the magneto-transport behavior of the sample.

  3. Colossal positive magnetoresistance in surface-passivated oxygen-deficient strontium titanite

    KAUST Repository

    David, Adrian

    2015-05-15

    Modulation of resistance by an external magnetic field, i.e. magnetoresistance effect, has been a long-lived theme of research due to both fundamental science and device applications. Here we report colossal positive magnetoresistance (CPMR) (>30,000% at a temperature of 2 K and a magnetic field of 9 T) discovered in degenerate semiconducting strontium titanite (SrTiO3) single crystals capped with ultrathin SrTiO3/LaAlO3 bilayers. The low-pressure high-temperature homoepitaxial growth of several unit cells of SrTiO3 introduces oxygen vacancies and high-mobility carriers in the bulk SrTiO3, and the three-unit-cell LaAlO3 capping layer passivates the surface and improves carrier mobility by suppressing surface-defect-related scattering. The coexistence of multiple types of carriers and inhomogeneous transport lead to the emergence of CPMR. This unit-cell-level surface engineering approach is promising to be generalized to others oxides, and to realize devices with high-mobility carriers and interesting magnetoelectronic properties.

  4. Multiple photoexcitation of two-dimensional electron systems: Bichromatic magnetoresistance oscillations

    Science.gov (United States)

    Iñarrea, Jesús

    2011-04-01

    We analyze theoretically magnetoresistance of high-mobility two-dimensional electron systems being illuminated by multiple radiation sources. In particular, we study the influence on the striking effect of microwave-induced resistance oscillations. We consider moderate radiation intensities without reaching the zero-resistance states regime. We use the model of radiation-driven Larmor orbits extended to several light sources. First, we study the case of two different radiations polarized in the same direction with different or equal frequencies. For both cases, we find a regime of superposition or interference of harmonic motions. When the frequencies are different, we obtain a modulated magnetoresistance response with pulses and beats. On the other hand, when the frequencies are the same, we find that the final result will depend on the phase difference between both radiation fields going from an enhanced response to a total collapse of oscillations, reaching an outcome similar to darkness. Finally, we consider a multiple photoexcitation case (three different frequencies) in which we propose the two-dimensional electron system as a potential nanoantenna device for microwaves.

  5. Effect of the application of a casein phosphopeptide-amorphous calcium phosphate (CPP-ACP) paste and adhesive systems on bond durability of a fissure sealant.

    Science.gov (United States)

    Borges, Boniek Castillo Dutra; Catelan, Anderson; Sasaki, Robson Tetsuo; Ambrosano, Gláucia Maria Bovi; Reis, André Figueiredo; Aguiar, Flávio Henrique Baggio

    2013-01-01

    This study aimed to evaluate the effect of the previous application of a casein phosphopeptide-amorphous calcium phosphate paste (MI Paste, MI) and adhesive systems on the bond durability of a fissure sealant. Ninety-eight enamel blocks were obtained from proximal surfaces of erupted third molars. Specimens were divided into 14 groups (n = 7) according to the previous application of MI (with and without) and the adhesive systems used (no adhesive system; hydrophobic resin of a three-step etch-and-rinse adhesive system; etch-and-rinse single-bottle adhesive system; all-in-one adhesive system; two-step self-etching adhesive system; additional phosphoric acid conditioning and all-in-one adhesive system; additional phosphoric acid conditioning and two-step self-etching adhesive system). A fissure sealant (Fluroshield) was applied and photoactivated for 20 s. Beams (~0.7 mm(2)) were prepared for the microtensile bond strength test, which was executed after 24 h or 6 months of water storage. Fractured specimens were analyzed by scanning electronic microscopy. Data were analyzed by two-way ANOVA with repeated measures/Tukey's test (P adhesive systems presented higher means than those groups where MI was not applied. Higher frequency of cohesive failures was observed for groups with MI. Applying a CPP-ACP containing paste on enamel before adhesive systems was an effective method to increase bond durability of the sealant tested.

  6. A Polarized Light Microscopic Study to Comparatively evaluate Four Remineralizing Agents on Enamel viz CPP-ACPF, ReminPro, SHY-NM and Colgate Strong Teeth.

    Science.gov (United States)

    Rajan, Reshma; Krishnan, Ramesh; Bhaskaran, Bibin; Kumar, Suresh V

    2015-01-01

    To compare and evaluate the remineralizing potential of four commercially available products namely SHY-NM, GC Tooth Mousse Plus, ReminPro and Colgate strong teeth on demineralized human teeth. The study included 50 extracted premolars having 3 × 3 mm window prepared on the middle third of the tooth, which was then subjected to demineralization for 48 hours at 37°C. Teeth were randomly selected and grouped into five study groups of 10 teeth in each. Each group was treated with respective remineralizing agent and sectioned using hard-tissue microtome. Each section obtained was visualized under polarized light microscope and analyzed using Image J software. The statistically evaluated results revealed that SHY-NM has the most remineralizing potential followed by ReminPro, GC Tooth Mousse Plus and fluoridated toothpaste. Based on the study, the SHY-NM was superior to the GC Tooth Mousse Plus, ReminPro and Colgate strong teeth on demineralized human teeth. How to cite this article: Rajan R, Krishnan R, Bhaskaran B, Kumar SV. A Polarized Light Microscopic Study to Comparatively evaluate Four Remineralizing Agents on Enamel viz CPP-ACPF, ReminPro, SHY-NM and Colgate Strong Teeth. Int J Clin Pediatr Dent 2015;8(1):42-47.

  7. Magnetic and magnetoresistance studies of nanometric electrodeposited Co films and Co/Cu layered structures: Influence of magnetic layer thickness

    Science.gov (United States)

    Zsurzsa, S.; Péter, L.; Kiss, L. F.; Bakonyi, I.

    2017-01-01

    The magnetic properties and the magnetoresistance behavior were investigated for electrodeposited nanoscale Co films, Co/Cu/Co sandwiches and Co/Cu multilayers with individual Co layer thicknesses ranging from 1 nm to 20 nm. The measured saturation magnetization values confirmed that the nominal and actual layer thicknesses are in fairly good agreement. All three types of layered structure exhibited anisotropic magnetoresistance for thick magnetic layers whereas the Co/Cu/Co sandwiches and Co/Cu multilayers with thinner magnetic layers exhibited giant magnetoresistance (GMR), the GMR magnitude being the largest for the thinnest Co layers. The decreasing values of the relative remanence and the coercive field when reducing the Co layer thickness down to below about 3 nm indicated the presence of superparamagnetic (SPM) regions in the magnetic layers which could be more firmly evidenced for these samples by a decomposition of the magnetoresistance vs. field curves into a ferromagnetic and an SPM contribution. For thicker magnetic layers, the dependence of the coercivity (Hc) on magnetic layer thickness (d) could be described for each of the layered structure types by the usual equation Hc=Hco+a/dn with an exponent around n=1. The common value of n suggests a similar mechanism for the magnetization reversal by domain wall motion in all three structure types and hints also at the absence of coupling between magnetic layers in the Co/Cu/Co sandwiches and Co/Cu multilayers.

  8. Characteristic tunnel-type conductivity and magnetoresistance in a CoO-coated monodispersive Co cluster assembly

    OpenAIRE

    Peng, D. L.; Sumiyama, Kenji; Yamamuro, S.; Hihara, Takehiko; Konno, T. J.; ヒハラ, タケヒコ; スミヤマ, ケンジ; 隅山, 兼治; 日原, 岳彦; Sumiyama, K.; Hihara, T.

    1999-01-01

    We have studied electrical conductivity, σ, and magnetoresistance in a CoO-coated monodispersive Co cluster assembly fabricated by a plasma-gas-aggregation-type cluster beam deposition technique. The temperature dependence of σ is described in the form of log σ vs 1/T for 7

  9. Four-terminal magnetoresistance of a two-dimensional electron-gas constriction in the ballistic regime

    NARCIS (Netherlands)

    Houten, H. van; Beenakker, C.W.J.; Loosdrecht, P.H.M. van; Thornton, T.J.; Ahmed, H.; Pepper, M.; Foxon, C.T.; Harris, J.J.

    1988-01-01

    A novel negative magnetoresistance effect is found in four-terminal measurements of the voltage drop across a short constriction of variable width in a high-mobility two-dimensional electron gas. The effect is interpreted as the suppression by a magnetic field of the geometrical constriction resista

  10. Magnetoresistance in Co/2D MoS2/Co and Ni/2D MoS2/Ni junctions.

    Science.gov (United States)

    Zhang, Han; Ye, Meng; Wang, Yangyang; Quhe, Ruge; Pan, Yuanyuan; Guo, Ying; Song, Zhigang; Yang, Jinbo; Guo, Wanlin; Lu, Jing

    2016-06-28

    Semiconducting single-layer (SL) and few-layer MoS2 have a flat surface, free of dangling bonds. Using density functional theory coupled with non-equilibrium Green's function method, we investigate the spin-polarized transport properties of Co/2D MoS2/Co and Ni/2D MoS2/Ni junctions with MoS2 layer numbers of N = 1, 3, and 5. Well-defined interfaces are formed between MoS2 and metal electrodes. The junctions with a SL MoS2 spacer are almost metallic owing to the strong coupling between MoS2 and the ferromagnets, while those are tunneling with a few layer MoS2 spacer. Both large magnetoresistance and tunneling magnetoresistance are found when fcc or hcp Co is used as an electrode. Therefore, flat single- and few-layer MoS2 can serve as an effective nonmagnetic spacer in a magnetoresistance or tunneling magnetoresistance device with a well-defined interface.

  11. Giant magnetoresistance due to magnetoelectric currents in Sr{sub 3}Co{sub 2}Fe{sub 24}O{sub 41} hexaferrites

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Xian [Department of Electrical and Computer Engineering, Center for Microwave Magnetic Materials and Integrated Circuits, Northeastern University, Boston, Massachusetts 02115 (United States); School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074 (China); Su, Zhijuan; Sokolov, Alexander; Hu, Bolin; Andalib, Parisa; Chen, Yajie, E-mail: y.chen@neu.edu; Harris, Vincent G. [Department of Electrical and Computer Engineering, Center for Microwave Magnetic Materials and Integrated Circuits, Northeastern University, Boston, Massachusetts 02115 (United States)

    2014-09-15

    The giant magnetoresistance and magnetoelectric (ME) effects of Z-type hexaferrite Sr{sub 3}Co{sub 2}Fe{sub 24}O{sub 41} were investigated. The present experiments indicated that an induced magnetoelectric current in a transverse conical spin structure not only presented a nonlinear behavior with magnetic field and electric field but also depended upon a sweep rate of the applied magnetic field. More interestingly, the ME current induced magnetoresistance was measured, yielding a giant room temperature magnetoresistance of 32.2% measured at low magnetic fields (∼125 Oe). These results reveal great potential for emerging applications of multifunctional magnetoelectric ferrite materials.

  12. Magnetoresistance of a 2D electron gas caused by electron interactions in the transition from the diffusive to the ballistic regime.

    Science.gov (United States)

    Li, L; Proskuryakov, Y Y; Savchenko, A K; Linfield, E H; Ritchie, D A

    2003-02-21

    On a high-mobility 2D electron gas we have observed, in strong magnetic fields (omega(c)tau>1), a parabolic negative magnetoresistance caused by electron-electron interactions in the regime of k(B)Ttau/ variant Planck's over 2pi approximately 1, which is the transition from the diffusive to the ballistic regime. From the temperature dependence of this magnetoresistance the interaction correction to the conductivity deltasigma(ee)(xx)(T) is obtained in the situation of a long-range fluctuation potential and strong magnetic field. The results are compared with predictions of the new theory of interaction-induced magnetoresistance.

  13. Exchange coupling and magnetoresistance in CoFe/NiCu/CoFe spin valves near the Curie point of the spacer

    Science.gov (United States)

    Andersson, S.; Korenivski, V.

    2010-05-01

    Thermal control of exchange coupling between two strongly ferromagnetic layers through a weakly ferromagnetic Ni-Cu spacer and the associated magnetoresistance is investigated. The spacer, having a Curie point slightly above room temperature, can be cycled between its paramagnetic and ferromagnetic states by varying the temperature externally or using joule heating. It is shown that the giant magnetoresistance vanishes due to a strong reduction in the mean free path in the spacer at above ˜30% Ni concentration—before the onset of ferromagnetism. Finally, a device is proposed which combines thermally controlled exchange coupling and large magnetoresistance by separating the switching and the readout elements.

  14. Correlation between vacancies and magnetoresistance changes in FM manganites using the Monte Carlo method

    Energy Technology Data Exchange (ETDEWEB)

    Agudelo-Giraldo, J.D. [PCM Computational Applications, Universidad Nacional de Colombia-Sede Manizales, Km. 9 vía al aeropuerto, Manizales (Colombia); Restrepo-Parra, E., E-mail: erestrepopa@unal.edu.co [PCM Computational Applications, Universidad Nacional de Colombia-Sede Manizales, Km. 9 vía al aeropuerto, Manizales (Colombia); Restrepo, J. [Grupo de Magnetismo y Simulación, Instituto de Física, Universidad de Antioquia, A.A. 1226, Medellín (Colombia)

    2015-10-01

    The Metropolis algorithm and the classical Heisenberg approximation were implemented by the Monte Carlo method to design a computational approach to the magnetization and resistivity of La{sub 2/3}Ca{sub 1/3}MnO{sub 3}, which depends on the Mn ion vacancies as the external magnetic field increases. This compound is ferromagnetic, and it exhibits the colossal magnetoresistance (CMR) effect. The monolayer was built with L×L×d dimensions, and it had L=30 umc (units of magnetic cells) for its dimension in the x–y plane and was d=12 umc in thickness. The Hamiltonian that was used contains interactions between first neighbors, the magnetocrystalline anisotropy effect and the external applied magnetic field response. The system that was considered contains mixed-valence bonds: Mn{sup 3+eg’}–O–Mn{sup 3+eg}, Mn{sup 3+eg}–O–Mn{sup 4+d3} and Mn{sup 3+eg’}–O–Mn{sup 4+d3}. The vacancies were placed randomly in the sample, replacing any type of Mn ion. The main result shows that without vacancies, the transitions T{sub C} (Curie temperature) and T{sub MI} (metal–insulator temperature) are similar, whereas with the increase in the vacancy percentage, T{sub MI} presented lower values than T{sub C}. This situation is caused by the competition between the external magnetic field, the vacancy percentage and the magnetocrystalline anisotropy, which favors the magnetoresistive effect at temperatures below T{sub MI}. Resistivity loops were also observed, which shows a direct correlation with the hysteresis loops of magnetization at temperatures below T{sub C}. - Highlights: • Changes in the resistivity of FM materials as a function of the temperature and external magnetic field can be obtained by the Monte Carlo method, Metropolis algorithm, classical Heisenberg and Kronig–Penney approximation for magnetic clusters. • Increases in the magnetoresistive effect were observed at temperatures below T{sub MI} by the vacancies effect. • The resistive hysteresis

  15. Magnetoresistive sensors for measurements of DNA hybridization kinetics - effect of TINA modifications

    DEFF Research Database (Denmark)

    Rizzi, Giovanni; Dufva, Martin; Hansen, Mikkel Fougt

    2017-01-01

    Acid (TINA) was studied. Such modifications have been demonstrated to increase the melting temperature of DNA hybrids in solution and are also relevant for surface-based DNA sensing. Kinetic data for DNA probes with no TINA modification or with TINA modifications at the 5' end (1 × TINA) or at both......We present the use of magnetoresistive sensors integrated in a microfluidic system for real-time studies of the hybridization kinetics of DNA labeled with magnetic nanoparticles to an array of surface-tethered probes. The nanoparticles were magnetized by the magnetic field from the sensor current....... A local negative reference ensured that only the specific binding signal was measured. Analysis of the real-time hybridization using a two-compartment model yielded both the association and dissociation constants kon, and koff. The effect of probe modifications with ortho-Twisted Intercalating Nucleic...

  16. Extrinsic and intrinsic magnetoresistance contributions of CrO{sub 2} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Rudiger, U.; Rabe, M.; Samm, K.; Ozyilmaz, B.; Pommer, J.; Fraune, M.; Guntherodt, G.; Senz, St.; Hesse, D.

    2001-06-01

    The growth of (010)-oriented CrO{sub 2} thin films on Al{sub 2}O{sub 3}(0001) substrates leads to a higher grain boundary density than the growth of (100)-oriented CrO{sub 2} thin films on isostructural TiO{sub 2}(100) substrates. For both types of films an intrinsic linear contribution to the high field magnetoresistance (MR) due to spin disorder has been determined at T=300K. This contribution does not depend on the crystalline quality of the films and supports the suggested intrinsic double exchange mechanism for CrO{sub 2}. At low temperature (T=10K) intergrain tunneling MR and Lorentz MR appear, which strongly depend on the crystalline properties of the CrO{sub 2} films. {copyright} 2001 American Institute of Physics.

  17. Angular phase shift in polarization-angle dependence of microwave-induced magnetoresistance oscillations

    Science.gov (United States)

    Liu, Han-Chun; Samaraweera, Rasanga L.; Mani, R. G.; Reichl, C.; Wegscheider, W.

    2016-12-01

    We examine the microwave frequency (f ) variation of the angular phase shift, θ0, observed in the polarization-angle dependence of microwave-induced magnetoresistance oscillations in a high-mobility GaAs/AlGaAs two-dimensional electron system. By fitting the diagonal resistance Rx x versus θ plots to an empirical cosine square law, we extract θ0 and trace its quasicontinuous variation with f . The results suggest that the overall average of θ0 extracted from Hall bar device sections with length-to-width ratios of L /W =1 and 2 is the same. We compare the observations with expectations arising from the "ponderomotive force" theory for microwave radiation-induced transport phenomena.

  18. Hall effect enhanced low-field sensitivity in a three-contact extraordinary magnetoresistance sensor

    KAUST Repository

    Sun, Jian

    2012-06-06

    An extraordinary magnetoresistance (EMR) device with a 3-contact geometry has been fabricated and characterized. A large enhancement of the output sensitivity at low magnetic fields compared to the conventional EMR device has been found, which can be attributed to an additional influence coming from the Hall effect. Output sensitivities of 0.19 mV/T at zero-field and 0.2 mV/T at 0.01 T have been measured in the device, which is equivalent to the ones of the conventional EMR sensors with a bias of ∼0.04 T. The exceptional performance of EMR sensors in the high field region is maintained in the 3-contact device.

  19. Spin-transfer torque magnetoresistive random-access memory technologies for normally off computing (invited)

    Energy Technology Data Exchange (ETDEWEB)

    Ando, K., E-mail: ando-koji@aist.go.jp; Yuasa, S. [National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba 305-8568 (Japan); Fujita, S.; Ito, J.; Yoda, H. [Toshiba Corporation, Kawasaki 212-8582 (Japan); Suzuki, Y. [Graduate School of Engineering Science, Osaka University, Toyonaka 560-8531 (Japan); Nakatani, Y. [Department of Communication Engineering and Informatics, University of Electro-Communication, Chofu 182-8585 (Japan); Miyazaki, T. [WPI-AIMR, Tohoku University, Sendai 980-8577 (Japan)

    2014-05-07

    Most parts of present computer systems are made of volatile devices, and the power to supply them to avoid information loss causes huge energy losses. We can eliminate this meaningless energy loss by utilizing the non-volatile function of advanced spin-transfer torque magnetoresistive random-access memory (STT-MRAM) technology and create a new type of computer, i.e., normally off computers. Critical tasks to achieve normally off computers are implementations of STT-MRAM technologies in the main memory and low-level cache memories. STT-MRAM technology for applications to the main memory has been successfully developed by using perpendicular STT-MRAMs, and faster STT-MRAM technologies for applications to the cache memory are now being developed. The present status of STT-MRAMs and challenges that remain for normally off computers are discussed.

  20. High-density magnetoresistive random access memory operating at ultralow voltage at room temperature.

    Science.gov (United States)

    Hu, Jia-Mian; Li, Zheng; Chen, Long-Qing; Nan, Ce-Wen

    2011-11-22

    The main bottlenecks limiting the practical applications of current magnetoresistive random access memory (MRAM) technology are its low storage density and high writing energy consumption. Although a number of proposals have been reported for voltage-controlled memory device in recent years, none of them simultaneously satisfy the important device attributes: high storage capacity, low power consumption and room temperature operation. Here we present, using phase-field simulations, a simple and new pathway towards high-performance MRAMs that display significant improvements over existing MRAM technologies or proposed concepts. The proposed nanoscale MRAM device simultaneously exhibits ultrahigh storage capacity of up to 88 Gb inch(-2), ultralow power dissipation as low as 0.16 fJ per bit and room temperature high-speed operation below 10 ns.

  1. All-magnetic magnetoresistive random access memory based on four terminal mCell device

    Science.gov (United States)

    Bromberg, D. M.; Sumbul, H. E.; Zhu, J.-G.; Pileggi, L.

    2015-05-01

    Magnetoresistive random access memory (MRAM) is a promising candidate to enable fast, non-volatile storage on chip. In this paper, we present an MRAM design where each bitcell is comprised entirely of four-terminal magnetic devices ("mCells") with no CMOS access transistors. We show that this design can achieve significant energy and area savings compared to the standard one transistor-one magnetic tunnel junction (1T1MTJ) bitcell based design. We estimate a write energy of ≈5 fJ/bit based on bitline and wordline voltages that operate at less than 100 mV with projected area smaller than that possible with aggressively scaled 10 nm node FinFETs in the 1T1MTJ design.

  2. Spin seebeck effect and thermal colossal magnetoresistance in graphene nanoribbon heterojunction.

    Science.gov (United States)

    Ni, Yun; Yao, Kailun; Fu, Huahua; Gao, Guoying; Zhu, Sicong; Wang, Shuling

    2013-01-01

    Spin caloritronics devices are very important for future development of low-power-consumption technology. We propose a new spin caloritronics device based on zigzag graphene nanoribbon (ZGNR), which is a heterojunction consisting of single-hydrogen-terminated ZGNR (ZGNR-H) and double-hydrogen-terminated ZGNR (ZGNR-H2). We predict that spin-up and spin-down currents flowing in opposite directions can be induced by temperature difference instead of external electrical bias. The thermal spin-up current is considerably large and greatly improved compared with previous work in graphene. Moreover, the thermal colossal magnetoresistance is obtained in our research, which could be used to fabricate highly-efficient spin caloritronics MR devices.

  3. Magnetoresistance behavior of Ni80Fe20/Ru/Ni80Fe20 nanostripes

    Science.gov (United States)

    Lupo, P.; Liu, X. M.; Adeyeye, A. O.

    2015-07-01

    We present a systematic investigation on the effects of interlayer coupling on the magnetoresistance (MR) behavior of Ni80Fe20/Ru(/Ni80Fe20 trilayer nanostripes (NSs) as a function of temperature T . By changing from 0.8 nm to 1.7 nm, either a ferromagnetic or an antiferromagnetic (AFM) type of interlayer coupling was achieved, leading to a markedly different MR behavior. We observed that the MR response is a superimposition of AMR and GMR effects, and it is significantly dependent on temperature. For AFM coupled NSs, there is a transition from a pure AFM state to a reversed spin-flop phase due to enhanced ferromagnetic pin-hole coupling at low T. Our experimental results are in good agreement with micromagnetic simulations.

  4. Spin-valve magnetoresistance in Co/Si/(Co/Cu/Co) multilayers

    Institute of Scientific and Technical Information of China (English)

    SHEN Hong-lie; LI Guan-xiong

    2005-01-01

    A series of Co/Si/(Co/Cu/Co) multilayers and Co/Si/Co sandwiches were prepared by high vacuum electron-beam evaporation. It was found that a Si spacer (≥0.9nm) could greatly decrease the interlayer coupling in Co/Si/Co sandwiches and there was no magnetoresistance(MR) or spin-valve MR in them due to the high resistivity of Si spacer. While in Co/Si/(Co/Cu/Co) multilayers, we observed a spin-valve MR of about 0.5% through a nominal 2.7nm Si spacer at room temperature. The spin-valve MR in Co/Si/(Co/Cu/Co) multilayers was attributed to the enhanced spin polarization of conduction electrons caused by the top Co/Cu/Co sandwich with GMR mechanism and high spin-dependent scattering at Co/Cu interface.

  5. Magnetic, magnetocaloric and magnetoresistive properties of cubic Laves phase HoAl2 single crystal.

    Science.gov (United States)

    Patra, M; Majumdar, S; Giri, S; Xiao, Y; Chatterji, T

    2014-01-29

    We report the magnetization (M) and magnetoresistance (MR) results of HoAl2 single crystals oriented along the ⟨100⟩ and ⟨110⟩ directions. Although HoAl2 has cubic Laves phase structure, a large anisotropy is observed in M and MR below the Curie temperature (TC). A satisfactory correlation between magnetic entropy change (ΔSM) and MR could be established along ⟨110⟩ and also ⟨100⟩, except for the temperature (T) region around which spin reorientation takes place. Large inverse magnetocaloric effect is observed at low T, which is associated with the spin reorientation process in the ⟨100⟩ direction. A theoretical model based on the Landau theory of phase transition can describe the T-variation of -ΔSM for T > TC.

  6. Interface-assisted magnetoresistance behavior for ultrathin NiFe films

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, Shao-Long; Chen, Xi; Yang, Kang [Department of Materials Physics and Chemistry, University of Science and Technology Beijing, Beijing 100083 (China); Han, Gang [Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083 (China); Teng, Jiao; Li, Xu-Jing; Yang, Guang; Liu, Qian-Qian; Liu, Yi-Wei [Department of Materials Physics and Chemistry, University of Science and Technology Beijing, Beijing 100083 (China); Ding, Lei [School of Materials and Chemical Engineering, Hainan University, Haikou 570228 (China); Yu, Guang-Hua, E-mail: ghyu@mater.ustb.edu.cn [Department of Materials Physics and Chemistry, University of Science and Technology Beijing, Beijing 100083 (China)

    2015-11-01

    Interface-assisted magnetoresistance (MR) behavior has been studied in Ta/MgO/NiFe/MgO/Ta multilayers by inserting a Mg metal layer between the NiFe layer and the top MgO layer. It is shown that MR ratio is about 31% larger than that in the films without Mg insertion. X-ray photoelectron spectroscopy and high resolution transmission electron microscope analyses show that the enhanced MR is primarily ascribed to effective control of chemical states at the NiFe/MgO interface and crystallization of the top MgO layer. - Highlights: • We studied magnetic and electric transport properties of ultrathin NiFe films. • Interface chemical states have strong influence on MR in NiFe films. • Crystallization of the top MgO layer has influence on MR in NiFe films.

  7. Four-fold symmetric anisotropic magnetoresistance of single-crystalline Ni(001) film

    Energy Technology Data Exchange (ETDEWEB)

    Xiao, X.; Li, J. X.; Ding, Z.; Wu, Y. Z., E-mail: wuyizheng@fudan.edu.cn [Department of Physics, State Key Laboratory of Surface Physics and Collaborative Innovation Center of Advanced Microstructures, Fudan University, Shanghai 200433 (China)

    2015-11-28

    Temperature, current-direction, and film-thickness dependent anisotropic magnetoresistance measurements were performed on single-crystalline face-centered-cubic nickel films. An additional four-fold symmetry was confirmed besides the typical two-fold term even at room temperature. The angular-dependent longitudinal resistivity resolves into a two-fold term, which varies as a function of current direction, and a four-fold term, which is isotropically independent of current direction. The experimental results are interpreted well using an expression based on the phenomenological model. Both the two- and four-fold terms vary inversely proportional to film thickness, indicating that interfacial scattering can significantly influence the spin-dependent transport properties.

  8. On the importance of sensor height variation for detection of magnetic labels by magnetoresistive sensors

    DEFF Research Database (Denmark)

    Henriksen, Anders Dahl; Wang, Shan Xiang; Hansen, Mikkel Fougt

    2015-01-01

    Magnetoresistive sensors are widely used for biosensing by detecting the signal from magnetic labels bound to a functionalized area that usually covers the entire sensor structure. Magnetic labels magnetized by a homogeneous applied magnetic field weaken and strengthen the applied field when...... they are over and outside the sensor area, respectively, and the detailed origin of the sensor signal in experimental studies has not been clarified. We systematically analyze the signal from both a single sensor stripe and an array of sensor stripes as function of the geometrical parameters of the sensor...... stripes as well as the distribution of magnetic labels over the stripes. We show that the signal from sensor stripes with a uniform protective coating, contrary to conventional wisdom in the field, is usually dominated by the contribution from magnetic labels between the sensor stripes rather than...

  9. Influence of Si buffer layer on the giant magnetoresistance effect in Co/Cu/Co sandwiches

    Institute of Scientific and Technical Information of China (English)

    李冠雄; 沈鸿烈; 沈勤我; 李铁; 邹世昌

    2000-01-01

    The Co/Cu/Co sandwiches with a semiconductor Si buffer layer were prepared by high vacuum electron-beam evaporation. The influence of the Si buffer layer with different thickness on the giant magnetoresistance (GMR) effect in the Co/Cu/Co sandwiches was investigated. It was found that the GMR showed an obvious anisotropy when the thickness of Si buffer layer was larger than or equal to 0.9 nm, and that the GMR was basically isotropic with an Si buffer layer thinner than 0.9 nm. The anisotropic behavior of GMR can be ascribed to the in-plane magnetic anisotropy in the sandwiches. Due to the interdiffusion at the Si buffer/Co interface, a Co2Si interface layer with a good (301) texture formed and induced the in-plane magnetic anisotropy in the sandwiches. The dependence of the crystalline texture of the sandwiches on the thickness of Si buffer layer was also studied.

  10. SPIN-DEPENDENT TUNNELING MAGNETORESISTANCE IN Fe-O/AlOx/Fe-O FILMS

    Institute of Scientific and Technical Information of China (English)

    L.Q. Pan; H. Qiu; F.P. Wang; P. Wu; Y. Tian; S. Luo

    2002-01-01

    Fe-O/AlOx/Fe-O tunnel junctions were prepared by reactive magnetron sputteringunder mixed working gas Ar+2%O2. The insulating AlOx layer of 1-2nm thicknesswas sputtered directly from Al2O3 target. Electrode layers were made of 80at.% ironand 20at.% oxygen. Bottom Fe-O electrode deposited on glass substrate annealedat 473K at the pressure of 3× 10-4Pa for an hour shows disparate crystalline grainstructure, lower electrical resistance and coercivity compared to the as-deposited topelectrode. Only crystalline structrure of α-Fe is observed in both electrodes. Largetunnel magnetoresistance in large Fe-O/AlOx/Fe-O junctions of 1cm2 is observed atroom temperature and the Ⅰ-Ⅴ characteristic curve of the junction shows that thebarrier of the junction is of high quality.

  11. Magnetic properties and giant magnetoresistance in electrodeposited Co-Ag granular films

    Energy Technology Data Exchange (ETDEWEB)

    Kenane, S. [Laboratoire Louis Neel, CNRS, 25 Avenue des Martyrs, BP 166, 38042 Grenoble Cedex 9 (France); Laboratoire d' Electrochimie et de Physico-Chimie des Materiaux et des Interfaces, UMR 5631-INPG-CNRS, Domaine Universitaire, BP 75, 38402 Saint Martin d' Heres (France); Laboratoire de Materiaux, Electrochimie et Corrosion, Universite Mouloud Mammeri, Tizi-Ouzou, 15000 (Algeria); Voiron, J. [Laboratoire Louis Neel, CNRS, 25 Avenue des Martyrs, BP 166, 38042 Grenoble Cedex 9 (France)]. E-mail: voiron@grenoble.cnrs.fr; Benbrahim, N. [Laboratoire de Materiaux, Electrochimie et Corrosion, Universite Mouloud Mammeri, Tizi-Ouzou, 15000 (Algeria); Chainet, E. [Laboratoire d' Electrochimie et de Physico-Chimie des Materiaux et des Interfaces, UMR 5631-INPG-CNRS, Domaine Universitaire, BP 75, 38402 Saint Martin d' Heres (France); Robaut, F. [CMTC, Consortium des Moyens Techniques communs de Grenoble (France)

    2006-02-15

    Small cobalt particles embedded in a silver matrix have been prepared using the electrodeposition technique. The size of the clusters is controlled by the deposition potential and the Co growth time. Structural, magnetic and magneto-transport properties of Co-Ag samples have been investigated as a function of the Co concentration between 2 and 40 at% cobalt. Superparamagnetic behavior is evidenced for the low contents of cobalt while long-range magnetic order appears at higher Co concentrations. The particles size has been determined from magnetic properties and from the X-ray diffraction technique, and varies between 3.5 and 9 nm. Magnetoresistance passes through a maximum as a function of the cobalt concentration. A maximum of {approx}4% GMR is obtained at room temperature while GMR reaches a value of 14% at 10 K.

  12. Asymmetric voltage behavior of the tunnel magnetoresistance in double barrier magnetic tunnel junctions

    KAUST Repository

    Useinov, Arthur

    2012-06-01

    In this paper, we study the value of the tunnel magnetoresistance (TMR) as a function of the applied voltage in double barrier magnetic tunnel junctions (DMTJs) with the left and right ferromagnetic (FM) layers being pinned and numerically estimate the possible difference of the TMR curves for negative and positive voltages in the homojunctions (equal barriers and electrodes). DMTJs are modeled as two single barrier junctions connected in series with consecutive tunneling (CST). We investigated the asymmetric voltage behavior of the TMR for the CST in the range of a general theoretical model. Significant asymmetries of the experimental curves, which arise due to different annealing regimes, are mostly explained by different heights of the tunnel barriers and asymmetries of spin polarizations in magnetic layers. © (2012) Trans Tech Publications.

  13. Optimization of an extraordinary magnetoresistance sensor in the semiconductor-metal hybrid structure

    KAUST Repository

    Sun, Jian

    2010-11-01

    The purpose of this paper is to show by numerical computation how geometric parameters influence the Extraordinary Magnetoresistance (EMR) effect in an InAs-Au hybrid device. Symmetric IVVI and VIIV configurations were considered. The results show that the width and the length-width ratio of InAs are important geometrical parameters for the EMR effect along with the placement of the leads. Approximately the same EMR effect was obtained for both IVVI and VIIV configurations when the applied magnetic field ranged from -1T to 1T. In an optimized geometry the EMR effect can reach 43000% at 1Tesla for IVVI and 42700% at 1 Tesla for the VIIV configuration. ©2010 IEEE.

  14. Giant magnetoresistance (GMR) sensors from basis to state-of-the-art applications

    CERN Document Server

    Reig, Candid; Mukhopadhyay, Subhas Chandra

    2013-01-01

    Since the discovery of the giant magnetoresistance (GMR) effect in 1988, spintronics has been presented as a new technology paradigm, awarded by the Nobel Prize in Physics in 2007. Initially used in read heads of hard disk drives, and while disputing a piece of the market to the flash memories, GMR devices have broadened their range of usage by growing towards magnetic field sensing applications in a huge range of scenarios. Potential applications at the time of the discovery have become real in the last two decades. Definitively, GMR was born to stand. In this sense, selected successful approaches of GMR based sensors in different applications: space, automotive, microelectronics, biotechnology … are collected in the present book. While keeping a practical orientation, the fundamentals as well as the current trends and challenges of this technology are also analyzed. In this sense, state of the art contributions from academy and industry can be found through the contents. This book can be used by starting ...

  15. Multiplex giant magnetoresistive biosensor microarrays identify interferon-associated autoantibodies in systemic lupus erythematosus

    Science.gov (United States)

    Lee, Jung-Rok; Haddon, D. James; Wand, Hannah E.; Price, Jordan V.; Diep, Vivian K.; Hall, Drew A.; Petri, Michelle; Baechler, Emily C.; Balboni, Imelda M.; Utz, Paul J.; Wang, Shan X.

    2016-06-01

    High titer, class-switched autoantibodies are a hallmark of systemic lupus erythematosus (SLE). Dysregulation of the interferon (IFN) pathway is observed in individuals with active SLE, although the association of specific autoantibodies with chemokine score, a combined measurement of three IFN-regulated chemokines, is not known. To identify autoantibodies associated with chemokine score, we developed giant magnetoresistive (GMR) biosensor microarrays, which allow the parallel measurement of multiple serum antibodies to autoantigens and peptides. We used the microarrays to analyze serum samples from SLE patients and found individuals with high chemokine scores had significantly greater reactivity to 13 autoantigens than individuals with low chemokine scores. Our findings demonstrate that multiple autoantibodies, including antibodies to U1-70K and modified histone H2B tails, are associated with IFN dysregulation in SLE. Further, they show the microarrays are capable of identifying autoantibodies associated with relevant clinical manifestations of SLE, with potential for use as biomarkers in clinical practice.

  16. Exchange Bias Tuning for Magnetoresistive Sensors by Inclusion of Non-Magnetic Impurities.

    Science.gov (United States)

    Sharma, Parikshit Pratim; Albisetti, Edoardo; Monticelli, Marco; Bertacco, Riccardo; Petti, Daniela

    2016-07-04

    The fine control of the exchange coupling strength and blocking temperature ofexchange bias systems is an important requirement for the development of magnetoresistive sensors with two pinned electrodes. In this paper, we successfully tune these parameters in top- and bottom-pinned systems, comprising 5 nm thick Co40Fe40B20 and 6.5 nm thick Ir22Mn78 films. By inserting Ru impurities at different concentrations in the Ir22Mn78 layer, blocking temperatures ranging from 220 °C to 100 °C and exchange bias fields from 200 Oe to 60 Oe are obtained. This method is then applied to the fabrication of sensors based on magnetic tunneling junctions consisting of a pinned synthetic antiferromagnet reference layer and a top-pinned sensing layer. This work paves the way towards the development of new sensors with finely tuned magnetic anisotropies.

  17. Large negative magnetoresistance in reactive sputtered polycrystalline GdNx films

    KAUST Repository

    Mi, W. B.

    2013-06-07

    Polycrystalline ferromagnetic GdN x films were fabricated at different N2 flow rates ( fN2 ) to modify N-vacancy concentration so as to study its influence on electrotransport. Metal-semiconductor transition appears at Curie temperature (TC ) of ∼40 K. Temperature-dependent magnetoresistance (MR) shows a peak at T C. The films at fN2  = 5, 10, 15, and 20 sccm show MR of −38%, −42%, −46%, and −86% at 5 K and 50 kOe, respectively. Above 15 K, MR is from colossal MR and from both colossal and tunneling MR below 15 K. The enhanced MR at fN2  = 20 sccm is attributed to large spin polarization of half-metallicity in GdN x with low N vacancies.

  18. Magnetic Field Sensors Based on Giant Magnetoresistance (GMR Technology: Applications in Electrical Current Sensing

    Directory of Open Access Journals (Sweden)

    Càndid Reig

    2009-10-01

    Full Text Available The 2007 Nobel Prize in Physics can be understood as a global recognition to the rapid development of the Giant Magnetoresistance (GMR, from both the physics and engineering points of view. Behind the utilization of GMR structures as read heads for massive storage magnetic hard disks, important applications as solid state magnetic sensors have emerged. Low cost, compatibility with standard CMOS technologies and high sensitivity are common advantages of these sensors. This way, they have been successfully applied in a lot different environments. In this work, we are trying to collect the Spanish contributions to the progress of the research related to the GMR based sensors covering, among other subjects, the applications, the sensor design, the modelling and the electronic interfaces, focusing on electrical current sensing applications.

  19. An Investigation of the Interaction between Science and Technology from Literatures of Giant Magnetoresistance

    Directory of Open Access Journals (Sweden)

    Yuan-Ho Huang

    2009-12-01

    Full Text Available This study focused on the interaction between science and technology of Giant Magnetoresistance (GMR from both scientific literatures and patent documents. The sample data included 1603 nonpatent references (NPRs from 1030 patents and 160 patent documents cited by 3287 scientific literatures. The result shows that the scientific literature amounts to 10 percent of all references cited by technical documents. On the other hand, only 4 percent of the scientific literature had cited the patent documents. The time lags between patent application and paper publication from the NPRs are mostly within 4 years. However, some patents which have been issued 10 years ago were still cited by scientific literatures. Subjects including physics, engineering, chemistry and computer are mostly cited by GMR patent documents, while technologies related to semiconductor devices, magnets inductances and transformers are mostly cited by GMR scientific literatures. [Article content in Chinese

  20. Exchange Bias Tuning for Magnetoresistive Sensors by Inclusion of Non-Magnetic Impurities

    Directory of Open Access Journals (Sweden)

    Parikshit Pratim Sharma

    2016-07-01

    Full Text Available The fine control of the exchange coupling strength and blocking temperature ofexchange bias systems is an important requirement for the development of magnetoresistive sensors with two pinned electrodes. In this paper, we successfully tune these parameters in top- and bottom-pinned systems, comprising 5 nm thick Co40Fe40B20 and 6.5 nm thick Ir22Mn78 films. By inserting Ru impurities at different concentrations in the Ir22Mn78 layer, blocking temperatures ranging from 220 °C to 100 °C and exchange bias fields from 200 Oe to 60 Oe are obtained. This method is then applied to the fabrication of sensors based on magnetic tunneling junctions consisting of a pinned synthetic antiferromagnet reference layer and a top-pinned sensing layer. This work paves the way towards the development of new sensors with finely tuned magnetic anisotropies.

  1. Magnetoresistance Effect in NiFe/BP/NiFe Vertical Spin Valve Devices

    Directory of Open Access Journals (Sweden)

    Leilei Xu

    2017-01-01

    Full Text Available Two-dimensional (2D layered materials such as graphene and transition metal dichalcogenides are emerging candidates for spintronic applications. Here, we report magnetoresistance (MR properties of a black phosphorus (BP spin valve devices consisting of thin BP flakes contacted by NiFe ferromagnetic (FM electrodes. The spin valve effect has been observed from room temperature to 4 K, with MR magnitudes of 0.57% at 4 K and 0.23% at 300 K. In addition, the spin valve resistance is found to decrease monotonically as temperature is decreased, indicating that the BP thin film works as a conductive interlayer between the NiFe electrodes.

  2. Both electron and hole Dirac cone states in Ba(FeAs)2 confirmed by magnetoresistance.

    Science.gov (United States)

    Huynh, Khuong K; Tanabe, Yoichi; Tanigaki, Katsumi

    2011-05-27

    Quantum transport of Dirac cone states in the iron pnictide Ba(FeAs)(2) with a d-multiband system is studied by using single crystal samples. Transverse magnetoresistance develops linearly against the magnetic field at low temperatures. The transport phenomena are interpreted in terms of the zeroth Landau level by applying the theory predicted by Abrikosov. The results of the semiclassical analyses of a two carrier system in a low magnetic field limit show that both the electron and hole reside as the high mobility states. Our results show that pairs of electron and hole Dirac cone states must be taken into account for an accurate interpretation in iron pnictides, which is in contrast with previous studies.

  3. Magnetoresistive polyaniline-silicon carbide metacomposites: plasma frequency determination and high magnetic field sensitivity.

    Science.gov (United States)

    Gu, Hongbo; Guo, Jiang; Khan, Mojammel Alam; Young, David P; Shen, T D; Wei, Suying; Guo, Zhanhu

    2016-07-20

    The Drude model modified by Debye relaxation time was introduced to determine the plasma frequency (ωp) in the surface initiated polymerization (SIP) synthesized β-silicon carbide (β-SiC)/polyaniline (PANI) metacomposites. The calculated plasma frequency for these metacomposites with different loadings of β-SiC nanoparticles was ranging from 6.11 × 10(4) to 1.53 × 10(5) rad s(-1). The relationship between the negative permittivity and plasma frequency indicates the existence of switching frequency, at which the permittivity was changed from negative to positive. More interestingly, the synthesized non-magnetic metacomposites, observed to follow the 3-dimensional (3-D) Mott variable range hopping (VRH) electrical conduction mechanism, demonstrated high positive magnetoresistance (MR) values of up to 57.48% and high MR sensitivity at low magnetic field regimes.

  4. Large magnetoresistance in compensated semimetals TaAs2 and NbAs2

    Science.gov (United States)

    Yuan, Zhujun; Lu, Hong; Liu, Yongjie; Wang, Junfeng; Jia, Shuang

    2016-05-01

    We report large magnetoresistance (MR) at low temperatures in single-crystalline nonmagnetic compounds TaAs2 and NbAs2. Both compounds exhibit parabolic-field-dependent MR larger than 5 ×103 in a magnetic field of 9 Tesla at 2 K. The MR starts to deviate from parabolic dependence above 10 T and intends to be saturated in 45 T for TaAs2 at 4.2 K. The Hall resistance measurements and band structure calculations reveal their compensated semimetal characteristics. Their large MR at low temperatures is ascribed to an effect for compensation of electrons and holes with large mobilities. After discussing the MR for different samples of TaAs2 and other semimetals, we found that the magnitudes of MR are strongly dependent on the samples' quality for different compounds.

  5. On-chip magnetic bead-based DNA melting curve analysis using a magnetoresistive sensor

    Science.gov (United States)

    Rizzi, Giovanni; Østerberg, Frederik W.; Henriksen, Anders D.; Dufva, Martin; Hansen, Mikkel F.

    2015-04-01

    We present real-time measurements of DNA melting curves in a chip-based system that detects the amount of surface-bound magnetic beads using magnetoresistive magnetic field sensors. The sensors detect the difference between the amount of beads bound to the top and bottom sensor branches of the differential sensor geometry. The sensor surfaces are functionalized with wild type (WT) and mutant type (MT) capture probes, differing by a single base insertion (a single nucleotide polymorphism, SNP). Complementary biotinylated targets in suspension couple streptavidin magnetic beads to the sensor surface. The beads are magnetized by the field arising from the bias current passed through the sensors. We demonstrate the first on-chip measurements of the melting of DNA hybrids upon a ramping of the temperature. This overcomes the limitation of using a single washing condition at constant temperature. Moreover, we demonstrate that a single sensor bridge can be used to genotype a SNP.

  6. Anomalous Tunnel Magnetoresistance and Spin Transfer Torque in Magnetic Tunnel Junctions with Embedded Nanoparticles

    Science.gov (United States)

    Useinov, Arthur; Ye, Lin-Xiu; Useinov, Niazbeck; Wu, Te-Ho; Lai, Chih-Huang

    2015-12-01

    The tunnel magnetoresistance (TMR) in the magnetic tunnel junction (MTJ) with embedded nanoparticles (NPs) was calculated in range of the quantum-ballistic model. The simulation was performed for electron tunneling through the insulating layer with embedded magnetic and non-magnetic NPs within the approach of the double barrier subsystem connected in parallel to the single barrier one. This model can be applied for both MTJs with in-plane magnetization and perpendicular one. We also calculated the in-plane component of the spin transfer torque (STT) versus the applied voltage in MTJs with magnetic NPs and determined that its value can be much larger than in single barrier system (SBS) for the same tunneling thickness. The reported simulation reproduces experimental data of the TMR suppression and peak-like TMR anomalies at low voltages available in leterature.

  7. Spin transport, magnetoresistance, and electrically detected magnetic resonance in amorphous hydrogenated silicon nitride

    Science.gov (United States)

    Mutch, Michael J.; Lenahan, Patrick M.; King, Sean W.

    2016-08-01

    We report on a study of spin transport via electrically detected magnetic resonance (EDMR) and near-zero field magnetoresistance (MR) in silicon nitride films. Silicon nitrides have long been important materials in solid state electronics. Although electronic transport in these materials is not well understood, electron paramagnetic resonance studies have identified a single dominating paramagnetic defect and have also provided physical and chemical descriptions of the defects, called K centers. Our EDMR and MR measurements clearly link the near-zero field MR response to the K centers and also indicate that K center energy levels are approximately 3.1 eV above the a-SiN:H valence band edge. In addition, our results suggest an approach for the study of defect mediated spin-transport in inorganic amorphous insulators via variable electric field and variable frequency EDMR and MR which may be widely applicable.

  8. On-chip magnetic bead-based DNA melting curve analysis using a magnetoresistive sensor

    DEFF Research Database (Denmark)

    Rizzi, Giovanni; Østerberg, Frederik Westergaard; Henriksen, Anders Dahl

    2014-01-01

    of the differential sensor geometry. The sensor surfaces are functionalized with wild type (WT) and mutant type (MT) capture probes, differing by a single base insertion (a single nucleotide polymorphism, SNP). Complementary biotinylated targets in suspension couple streptavidin magnetic beads to the sensor surface......We present real-time measurements of DNA melting curves in a chip-based system that detects the amount of surface-bound magnetic beads using magnetoresistive magnetic field sensors. The sensors detect the difference between the amount of beads bound to the top and bottom sensor branches....... The beads are magnetized by the field arising from the bias current passed through the sensors. We demonstrate the first on-chip measurements of the melting of DNA hybrids upon a ramping of the temperature. This overcomes the limitation of using a single washing condition at constant temperature. Moreover...

  9. Enhancement of Magnetoresistance in Granular CrO2/Polystyrene Composites

    Institute of Scientific and Technical Information of China (English)

    陈亚杰; 张晓渝; 李振亚

    2003-01-01

    We present a study of magnetotransport in CrO2/polystyrene (PS) composites over a range of polystyrene concentration (0-30wt.%). In the experiment, an obvious enhancement in magnetoresistance (MR) is observed at 77K and at room temperature as the half-metallic CrO2 particles are encapsulated with a thin layer of insulating polystyrene. The enhanced MR can be interpreted in terms of spin-dependent intergranular tunnelling with 4-nm-thick PS barrier. Moreover, it is found that the novel PS barrier contributes to room-temperature MR more significantly than that at 77K. Temperature dependence of resistance is good agreement with ~ T-1/4 in the temperature range from 77 to 298 K.

  10. Giant magnetoresistance effect detection of magnetization reversal in single crystalline nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Yamamoto, H; Kasatani, Y; Yamaguchi, A; Miyajima, H, E-mail: ykasatan@phys.keio.ac.j, E-mail: yamaguch@phys.keio.ac.j, E-mail: miyajima@phys.keio.ac.j [Department of Physics, Keio University, Hiyoshi, Yokohama 223-8522 (Japan)

    2010-01-01

    The controllable and rapid magnetization reversal in nano-scale wires is fundamental to the operation of new magnetic logic and data storage devices. A lot of previous investigations for the single domain wall (DW) dynamics in nano-scale wires have been performed by soft ferromagnetic material such as polycrystalline permalloy with negligible magnetic crystalline anisotropy. In fact, it is vital to understand the DW dynamics within the crystalline anisotropy for not only the fundamental magnetism but also potential applications. The aim of this study is to present the experimental result of magnetization reversal in epitaxial single crystalline nanowires by using giant magnetoresistance effect. The DW at the edge of the wire, and the switching field strongly depends on the crystalline anisotropy.

  11. Effect of nano-oxide layers on the magnetoresistance of ultrathin permalloy films

    Institute of Scientific and Technical Information of China (English)

    WANG Le; ZHANG Jinzhong; WANG Lijin

    2009-01-01

    Ta/NiFe/Ta ultrathin films with and without nano-oxide layers (NOLs) were prepared by magnetron sputtering followed by a vacuum an-nealing process. The influence of NOLs on the magnetoresistance (MR) ratio of ultrathin permalloy films was studied. The results show that the influence of grain size and textures on the MR ratio becomes weak when the thickness of the NiFe layer is below 15 nm. A higher MR ratio was observed for the thinner (<15 nm) NiFe film with NOLs. The MR ratio of a 10 nm NiFe film can be remarkably enhanced by NOLs. The enhanced MR ratio for these ultrathin films can be attributed to the enhanced specular reflection of conduction electrons.

  12. Stability of standing spin wave in permalloy thin film studied by anisotropic magnetoresistance effect

    Energy Technology Data Exchange (ETDEWEB)

    Yamanoi, K.; Yokotani, Y. [Department of Physics, Kyushu University, 6-10-1 Hakozaki, Fukuoka 812-8581 (Japan); Cui, X. [Graduate School of Information Science and Electrical Engineering, Kyushu University, 744 Motooka, Fukuoka 819-0395 (Japan); Yakata, S. [Department of Information Electronics, Fukuoka Institute of Technology, 3-30-1 Wajiro-higashi, Higashi-ku, Fukuoka 811-0295 (Japan); Kimura, T., E-mail: t-kimu@phys.kyushu-u.ac.jp [Department of Physics, Kyushu University, 6-10-1 Hakozaki, Fukuoka 812-8581 (Japan); Research Center for Quantum Nano-Spin Sciences, Kyushu University, 6-10-1 Hakozaki, Fukuoka 812-8581 (Japan)

    2015-12-21

    We have investigated the stability for the resonant spin precession under the strong microwave magnetic field by a specially developed detection method using the anisotropic magnetoresistance effect. The electrically separated excitation and detection circuits enable us to investigate the influence of the heating effect and the nonuniform spin dynamics independently. The large detecting current is found to induce the field shift of the resonant spectra because of the Joule heating. From the microwave power dependence, we found that the linear response regime for the standing spin wave is larger than that for the ferromagnetic resonance. This robust characteristic of the standing spin wave is an important advantage for the high power operation of the spin-wave device.

  13. High tunneling magnetoresistance ratio in perpendicular magnetic tunnel junctions using Fe-based Heusler alloys

    Science.gov (United States)

    Wang, Yu-Pu; Lim, Sze-Ter; Han, Gu-Chang; Teo, Kie-Leong

    2015-12-01

    Heulser alloys Fe2Cr1-xCoxSi (FCCS) with different Co compositions x have been predicted to have high spin polarization. High perpendicular magnetic anisotropy (PMA) has been observed in ultra-thin FCCS films with magnetic anisotropy energy density up to 2.3 × 106 erg/cm3. The perpendicular magnetic tunnel junctions (p-MTJs) using FCCS films with different Co compositions x as the bottom electrode have been fabricated and the post-annealing effects have been investigated in details. An attractive tunneling magnetoresistance ratio as high as 51.3% is achieved for p-MTJs using Fe2CrSi (FCS) as the bottom electrode. The thermal stability Δ can be as high as 70 for 40 nm dimension devices using FCS, which is high enough to endure a retention time of over 10 years. Therefore, Heusler alloy FCS is a promising PMA candidate for p-MTJ application.

  14. Investigation of the magnetoresistivity in compositional superlattices under the influence of an intense electromagnetic wave

    Science.gov (United States)

    Hoi, Bui Dinh; Bau, Nguyen Quang; Nam, Nguyen Dinh

    2016-01-01

    The magnetoresistivity (MR) is theoretically calculated in a compositional semiconductor superlattice (CSSL), subjected to a crossed DC electric field and magnetic field, in the presence of an intense electromagnetic wave (EMW). The magnetic field is oriented along the growth direction of the CSSL and the electron-acoustic phonon interaction is taken into account at low temperature. Numerical results for the GaN/AlGaN CSSL show the Shubnikov-de Haas (SdH) oscillations in the MR whose period does not depend on the temperature and amplitude decreases with increasing temperature. The temperature dependence of the relative amplitude of these oscillations is in good agreement with other theories and experiments in some two-dimensional (2D) electron systems. The influence of the EMW as well as superlattice structure on the MR is discussed and compared with available theoretical and experimental results.

  15. A 256 pixel magnetoresistive biosensor microarray in 0.18μm CMOS.

    Science.gov (United States)

    Hall, Drew A; Gaster, Richard S; Makinwa, Kofi; Wang, Shan X; Murmann, Boris

    2013-05-01

    Magnetic nanotechnologies have shown significant potential in several areas of nanomedicine such as imaging, therapeutics, and early disease detection. Giant magnetoresistive spin-valve (GMR SV) sensors coupled with magnetic nanotags (MNTs) possess great promise as ultra-sensitive biosensors for diagnostics. We report an integrated sensor interface for an array of 256 GMR SV biosensors designed in 0.18 μm CMOS. Arranged like an imager, each of the 16 column level readout channels contains an analog front- end and a compact ΣΔ modulator (0.054 mm(2)) with 84 dB of dynamic range and an input referred noise of 49 nT/√Hz. Performance is demonstrated through detection of an ovarian cancer biomarker, secretory leukocyte peptidase inhibitor (SLPI), spiked at concentrations as low as 10 fM. This system is designed as a replacement for optical protein microarrays while also providing real-time kinetics monitoring.

  16. Giant magnetoresistive biosensors for molecular diagnosis: surface chemistry and assay development

    Science.gov (United States)

    Yu, Heng; Osterfeld, Sebastian J.; Xu, Liang; White, Robert L.; Pourmand, Nader; Wang, Shan X.

    2008-08-01

    Giant magnetoresistive (GMR) biochips using magnetic nanoparticle as labels were developed for molecular diagnosis. The sensor arrays consist of GMR sensing strips of 1.5 μm or 0.75 μm in width. GMR sensors are exquisitely sensitive yet very delicate, requiring ultrathin corrosion-resistive passivation and efficient surface chemistry for oligonucleotide probe immobilization. A mild and stable surface chemistry was first developed that is especially suitable for modifying delicate electronic device surfaces, and a practical application of our GMR biosensors was then demonstrated for detecting four most common human papillomavirus (HPV) subtypes in plasmids. We also showed that the DNA hybridization time could potentially be reduced from overnight to about ten minutes using microfluidics.

  17. Remote detection of nuclear magnetic resonance with an anisotropic magnetoresistive sensor.

    Science.gov (United States)

    Verpillat, F; Ledbetter, M P; Xu, S; Michalak, D J; Hilty, C; Bouchard, L-S; Antonijevic, S; Budker, D; Pines, A

    2008-02-19

    We report the detection of nuclear magnetic resonance (NMR) using an anisotropic magnetoresistive (AMR) sensor. A "remote-detection" arrangement was used in which protons in flowing water were prepolarized in the field of a superconducting NMR magnet, adiabatically inverted, and subsequently detected with an AMR sensor situated downstream from the magnet and the adiabatic inverter. AMR sensing is well suited for NMR detection in microfluidic "lab-on-a-chip" applications because the sensors are small, typically on the order of 10 mum. An estimate of the sensitivity for an optimized system indicates that approximately 6 x 10(13) protons in a volume of 1,000 mum(3), prepolarized in a 10-kG magnetic field, can be detected with a signal-to-noise ratio of 3 in a 1-Hz bandwidth. This level of sensitivity is competitive with that demonstrated by microcoils in superconducting magnets and with the projected sensitivity of microfabricated atomic magnetometers.

  18. Low temperature magnetoresistance and magnetization studies of iron encapsulated multiwall carbon nanotube/polyvinyl chloride composites

    Science.gov (United States)

    Vasanthkumar, M. S.; Sameera, I.; Bhatia, Ravi; Prasad, V.; Jayanna, H. S.

    2015-01-01

    We present the experimental results of temperature dependent magnetoresistance (MR) and the magnetization studies of iron encapsulated multiwall carbon nanotube (MWCNT)/polyvinyl chloride (PVC) composites with different wt% of MWCNTs. Transmission electron microscopy characterization shows that MWCNTs are encapsulated with rod-shaped iron nanoparticles of aspect ratio of ~3. The MR behavior of 1.9 wt% MWCNT/PVC sample shows dominance of forward scattering and wave function shrinkage whereas, weak localization and electron-electron interactions explain the MR data of higher wt% samples (9.1, 16.6 and 44.4 wt%). The composites of 4.7 and 9.1 wt% exhibit ferromagnetic behavior at all temperatures with room temperature coercivities of ~1036 and 628 Oe, respectively.

  19. Two Different Types of Antiferromagnetic Couplings and Magnetoresistances in Fe/Si Multilayers

    Science.gov (United States)

    Inomata, Koichiro; Yusu, Keiichiro; Saito, Yoshiaki

    1994-12-01

    Two different types of antiferromagnetic (AF) interlayer couplings as a function of Si layer thickness, t Si, have been observed in a series of (2.6 nm Fe/ tSi nm Si)22 multilayers. One of the AF-couplings was observed at around t Si=1.2 nm at room temperature (RT) and changed to ferromagnetic (F) coupling at a low temperature. The other AF coupling was observed for t Si thicker than 1.5 nm with a minimum around t Si=2.5 nm, and was almost temperature independent. Negative magnetoresistance has been observed in the multilayers with the AF coupling, and has similar temperature dependence as that of the AF coupling.

  20. Resonant tunnel magnetoresistance in double-barrier planar magnetic tunnel junctions

    KAUST Repository

    Useinov, A. N.

    2011-08-24

    We present a theoretical approach to calculate the spin-dependent current and tunnel magnetoresistance (TMR) in a double-barrier magnetic tunnel junction (DMTJ), in which the magnetization of the middle ferromagnetic metal layer can be aligned parallel or antiparallel in relation to the fixed magnetizations of the left and right ferromagnetic electrodes. The electron transport through the DMTJ is considered as a three-dimensional problem, taking into account all transmitting electron trajectories as well as the spin-dependent momentum conservation law. The dependence of the transmission coefficient and spin-polarized currents on the applied voltage is derived as an exact solution to the quantum-mechanical problem for the spin-polarized transport. In the range of the developed physical model, the resonant tunneling, nonresonant tunneling, and enhanced spin filtering can be explained; the simulation results are in good agreement with experimental data.