Current perpendicular to plane giant magnetoresistance in laminated nanostructures

International Nuclear Information System (INIS)

Vedyayev, A.; Zhukov, I.; Dieny, B.

2005-01-01

We theoretically studied spin-dependent electron transport perpendicular-to-plain (CPP) in magnetic laminated multilayered structures by using Kubo formalism. We took into account not only bulk scattering, but the interface resistance due to both specular and diffuse reflection and also spin conserving and spin-flip processes. It was shown that spin-flip scattering at interfaces substantially reduces the value of giant magnetoresistance (GMR). This can explain the experimental observations that the CPP GMR ratio for laminated structures only slightly increases as compared to non-laminated ones even though lamination induces a significant increase in CPP resistance

Inverse spin-valve effect in nanoscale Si-based spin-valve devices

Science.gov (United States)

Hiep, Duong Dinh; Tanaka, Masaaki; Hai, Pham Nam

2017-12-01

We investigated the spin-valve effect in nano-scale silicon (Si)-based spin-valve devices using a Fe/MgO/Ge spin injector/detector deposited on Si by molecular beam epitaxy. For a device with a 20 nm Si channel, we observed clear magnetoresistance up to 3% at low temperature when a magnetic field was applied in the film plane along the Si channel transport direction. A large spin-dependent output voltage of 20 mV was observed at a bias voltage of 0.9 V at 15 K, which is among the highest values in lateral spin-valve devices reported so far. Furthermore, we observed that the sign of the spin-valve effect is reversed at low temperatures, suggesting the possibility of a spin-blockade effect of defect states in the MgO/Ge tunneling barrier.

Current perpendicular to plane giant magnetoresistance and tunneling magnetoresistance treated with unified model

NARCIS (Netherlands)

Jonkers, PAE

2002-01-01

The conceptual similarity between current perpendicular to plane giant magnetoresistance (CPP-GMR) and tunneling magnetoresistance (TMR) is exploited by utilizing a unified single-particle model accounting for both types of magnetoresistance. By defining structures composed of ferromagnetic,

Microwave frequency tuning in heterogeneous spin torque oscillator with perpendicular polarizer: A macrospin study

Science.gov (United States)

Bhoomeeswaran, H.; Vivek, T.; Sabareesan, P.

2018-04-01

In this article, we have theoretically devised a Spin Torque Nano Oscillator (STNO) with perpendicular polarizer using macro spin model. The devised spin valve structure is heterogeneous (i.e.) it is made of two different ferromagnetic materials [Co and its alloy CoFeB]. The dynamics of magnetization provoked by spin transfer torque is studied numerically by solving the famous Landau-Lifshitz-Gilbert-Slonczewski [LLGS] equation. The results are obtained for the perpendicular polarizer and for that particular out of plane orientation we vary the free layer angle from 10° to 90°. The obtained results are highly appealing, because frequency range is available in all the tilt angles of free layer and it is exceptionally tunable in all free layer tilt angles with zero applied field. Moreover, the utmost operating frequency of about 83.3 GHz and its corresponding power of 4.488 µW/mA2/GHz is acquired for the free layer tilt angle θ = 90° with the solid applied current density of 10 × 1010 A/m2. Also, our device emits high quality factor of about 396, which is remarkably desirable for making devices. These pioneering results provides a significant development for future spintronic based devices.

Nanoconstriction spin-Hall oscillator with perpendicular magnetic anisotropy

Science.gov (United States)

Divinskiy, B.; Demidov, V. E.; Kozhanov, A.; Rinkevich, A. B.; Demokritov, S. O.; Urazhdin, S.

2017-07-01

We experimentally study spin-Hall nano-oscillators based on [Co/Ni] multilayers with perpendicular magnetic anisotropy. We show that these devices exhibit single-frequency auto-oscillations at current densities comparable to those for in-plane magnetized oscillators. The demonstrated oscillators exhibit large magnetization precession amplitudes, and their oscillation frequency is highly tunable by the electric current. These features make them promising for applications in high-speed integrated microwave circuits.

Enhancement of magnetoresistance by inserting thin NiAl layers at the interfaces in Co{sub 2}FeGa{sub 0.5}Ge{sub 0.5}/Ag/Co{sub 2}FeGa{sub 0.5}Ge{sub 0.5} current-perpendicular-to-plane pseudo spin valves

Energy Technology Data Exchange (ETDEWEB)

Jung, J. W.; Sakuraba, Y., E-mail: Sakuraba.Yuya@nims.go.jp; Sasaki, T. T.; Hono, K. [National Institute for Materials Science (NIMS), Sengen 1-2-1, Tsukuba, Ibaraki 305-0047 (Japan); Miura, Y. [National Institute for Materials Science (NIMS), Sengen 1-2-1, Tsukuba, Ibaraki 305-0047 (Japan); Kyoto Institute of Technology, Electrical Engineering and Electronics, Kyoto 606-8585 (Japan)

2016-03-07

We have investigated the effects of insertion of a thin NiAl layer (≤0.63 nm) into a Co{sub 2}FeGa{sub 0.5}Ge{sub 0.5} (CFGG)/Ag interface on the magnetoresistive properties in CFGG/Ag/CFGG current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) pseudo spin valves (PSVs). First-principles calculations of ballistic transmittance clarified that the interfacial band matching at the (001)-oriented NiAl/CFGG interface is better than that at the (001)-Ag/CFGG interface. The insertion of 0.21-nm-thick NiAl layers at the Co{sub 2}FeGa{sub 0.5}Ge{sub 0.5}/Ag interfaces effectively improved the magnetoresistance (MR) output; the observed average and the highest MR ratio (ΔRA) are 62% (25 mΩ μm{sup 2}) and 77% (31 mΩ μm{sup 2}) at room temperature, respectively, which are much higher than those without NiAl insertion. Microstructural analysis using scanning transmission electron microscopy confirmed the existence of thin NiAl layers at the Ag interfaces with only modest interdiffusion even after annealing at 550 °C. The improvement of the interfacial spin-dependent scattering by very thin NiAl insertion can be a predominant reason for the enhancement of the MR output.

In-plane current induced domain wall nucleation and its stochasticity in perpendicular magnetic anisotropy Hall cross structures

International Nuclear Information System (INIS)

Sethi, P.; Murapaka, C.; Lim, G. J.; Lew, W. S.

2015-01-01

Hall cross structures in magnetic nanowires are commonly used for electrical detection of magnetization reversal in which a domain wall (DW) is conventionally nucleated by a local Oersted field. In this letter, we demonstrate DW nucleation in Co/Ni perpendicular magnetic anisotropy nanowire at the magnetic Hall cross junction. The DWs are nucleated by applying an in-plane pulsed current through the nanowire without the need of a local Oersted field. The change in Hall resistance, detected using anomalous Hall effect, is governed by the magnetic volume switched at the Hall junction, which can be tuned by varying the magnitude of the applied current density and pulse width. The nucleated DWs are driven simultaneously under the spin transfer torque effect when the applied current density is above a threshold. The possibility of multiple DW generation and variation in magnetic volume switched makes nucleation process stochastic in nature. The in-plane current induced stochastic nature of DW generation may find applications in random number generation

Anisotropic spin relaxation in graphene

NARCIS (Netherlands)

Tombros, N.; Tanabe, S.; Veligura, A.; Jozsa, C.; Popinciuc, M.; Jonkman, H. T.; van Wees, B. J.

2008-01-01

Spin relaxation in graphene is investigated in electrical graphene spin valve devices in the nonlocal geometry. Ferromagnetic electrodes with in-plane magnetizations inject spins parallel to the graphene layer. They are subject to Hanle spin precession under a magnetic field B applied perpendicular

Spin-torque oscillation in large size nano-magnet with perpendicular magnetic fields

Energy Technology Data Exchange (ETDEWEB)

Luo, Linqiang, E-mail: LL6UK@virginia.edu [Department of Physics, University of Virginia, Charlottesville, VA 22904 (United States); Kabir, Mehdi [Department of Electrical & Computer Engineering, University of Virginia, Charlottesville, VA 22904 (United States); Dao, Nam; Kittiwatanakul, Salinporn [Department of Materials Science & Engineering, University of Virginia, Charlottesville, VA 22904 (United States); Cyberey, Michael [Department of Electrical Engineering, University of Virginia, Charlottesville, VA 22904 (United States); Wolf, Stuart A. [Department of Physics, University of Virginia, Charlottesville, VA 22904 (United States); Department of Materials Science & Engineering, University of Virginia, Charlottesville, VA 22904 (United States); Institute of Defense Analyses, Alexandria, VA 22311 (United States); Stan, Mircea [Department of Electrical & Computer Engineering, University of Virginia, Charlottesville, VA 22904 (United States); Lu, Jiwei [Department of Materials Science & Engineering, University of Virginia, Charlottesville, VA 22904 (United States)

2017-06-15

Highlights: • 500 nm size nano-pillar device was fabricated by photolithography techniques. • A magnetic hybrid structure was achieved with perpendicular magnetic fields. • Spin torque switching and oscillation was demonstrated in the large sized device. • Micromagnetic simulations accurately reproduced the experimental results. • Simulations demonstrated the synchronization of magnetic inhomogeneities. - Abstract: DC current induced magnetization reversal and magnetization oscillation was observed in 500 nm large size Co{sub 90}Fe{sub 10}/Cu/Ni{sub 80}Fe{sub 20} pillars. A perpendicular external field enhanced the coercive field separation between the reference layer (Co{sub 90}Fe{sub 10}) and free layer (Ni{sub 80}Fe{sub 20}) in the pseudo spin valve, allowing a large window of external magnetic field for exploring the free-layer reversal. A magnetic hybrid structure was achieved for the study of spin torque oscillation by applying a perpendicular field >3 kOe. The magnetization precession was manifested in terms of the multiple peaks on the differential resistance curves. Depending on the bias current and applied field, the regions of magnetic switching and magnetization precession on a dynamical stability diagram has been discussed in details. Micromagnetic simulations are shown to be in good agreement with experimental results and provide insight for synchronization of inhomogeneities in large sized device. The ability to manipulate spin-dynamics on large size devices could be proved useful for increasing the output power of the spin-transfer nano-oscillators (STNOs).

Interfacial spin-orbit splitting and current-driven spin torque in anisotropic tunnel junctions

KAUST Repository

Manchon, Aurelien

2011-01-01

be generated at the second order in SOI, even in the absence of an external spin polarizer. This torque possesses two components, one in plane and one perpendicular to the plane of rotation, that can induce either current-driven magnetization switching from

Competing effect of spin-orbit torque terms on perpendicular magnetization switching in structures with multiple inversion asymmetries

OpenAIRE

Yu, Guoqiang; Akyol, Mustafa; Upadhyaya, Pramey; Li, Xiang; He, Congli; Fan, Yabin; Montazeri, Mohammad; Alzate, Juan G.; Lang, Murong; Wong, Kin L.; Khalili Amiri, Pedram; Wang, Kang L.

2016-01-01

Current-induced spin-orbit torques (SOTs) in structurally asymmetric multilayers have been used to efficiently manipulate magnetization. In a structure with vertical symmetry breaking, a damping-like SOT can deterministically switch a perpendicular magnet, provided an in-plane magnetic field is applied. Recently, it has been further demonstrated that the in-plane magnetic field can be eliminated by introducing a new type of perpendicular field-like SOT via incorporating a lateral structural a...

Triple differential cross-sections of Ne (2s2) in coplanar to perpendicular plane geometry

Science.gov (United States)

Chen, L. Q.; Khajuria, Y.; Chen, X. J.; Xu, K. Z.

2003-10-01

The distorted wave Born approximation (DWBA) with the spin averaged static exchange potential has been used to calculate the triple differential cross-sections (TDCSs) for Ne (2s^2) ionization by electron impact in coplanar to perpendicular plane symmetric geometry at 110.5 eV incident electron energy. The present theoretical results at gun angles Psi = 0^circ (coplanar symmetric geometry) and Psi = 90^circ (perpendicular plane geometry) are in satisfactory agreement with the available experimental data. A deep interference minimum appears in the TDCS in the coplanar symmetric geometry and a strong peak at scattering angle xi = 90^circ caused by the single collision mechanism has been observed in the perpendicular plane geometry. The TDCSs at the gun angles Psi = 30^circ, and Psi = 60^circ are predicted.

Current-induced magnetization changes in a spin valve due to incoherent emission of non-equilibrium magnons

OpenAIRE

Kozub, V. I.; Caro, J.

2004-01-01

We describe spin transfer in a ferromagnet/normal metal/ferromagnet spin-valve point contact. Spin is transferred from the spin-polarized device current to the magnetization of the free layer by the mechanism of incoherent magnon emission by electrons. Our approach is based on the rate equation for the magnon occupation, using Fermi's golden rule for magnon emission and absorption and the non-equilibrium electron distribution for a biased spin valve. The magnon emission reduces the magnetizat...

Bias voltage dependence of tunneling magnetoresistance in granular C60–Co films with current-perpendicular-to-plane geometry

International Nuclear Information System (INIS)

Sakai, Seiji; Mitani, Seiji; Matsumoto, Yoshihiro; Entani, Shiro; Avramov, Pavel; Ohtomo, Manabu; Naramoto, Hiroshi; Takanashi, Koki

2012-01-01

Voltage-dependence of the tunneling magnetoresistance effect in the granular C 60 –Co films has been investigated for the samples with the current-perpendicular-to-plane geometry. The transport measurements under this geometry demonstrate that the granular C 60 –Co films show an unusual exponential bias voltage dependence of the magnetoresistance ratio down to zero voltage. Small characteristic energies of less than 10's meV are derived from the temperature dependences of the characteristic voltage in the exponential relationship. Considering the magnitudes of the voltage drop between Co nanoparticles and also the effect of cotunneling on the energy values, the characteristic energies for the voltage-induced degradation of the spin polarization are found to show a satisfactory agreement with that for the thermally-induced one. It can be reasonably expected that the onset of magnetic disorder to the localized d-electron spins at the interface region of the C 60 -based matrix (C 60 –Co compound) with Co nanoparticles leading to the unusual voltage and temperature dependence of the magnetoresistance ratio and the spin polarization at low temperatures. - Highlights: ► Unusual voltage dependence of the TMR effect in granular C 60 –Co films is studied. ► Linear temperature-characteristic voltage dependence in the MR–V relationship. ► Spin-flip scattering by the exchange-coupled d-electron spins at the interface.

Resistive switching and voltage induced modulation of tunneling magnetoresistance in nanosized perpendicular organic spin valves

Directory of Open Access Journals (Sweden)

Robert Göckeritz

2016-04-01

Full Text Available Nanoscale multifunctional perpendicular organic spin valves have been fabricated. The devices based on an La0.7Sr0.3MnO3/Alq3/Co trilayer show resistive switching of up to 4-5 orders of magnitude and magnetoresistance as high as -70% the latter even changing sign when voltage pulses are applied. This combination of phenomena is typically observed in multiferroic tunnel junctions where it is attributed to magnetoelectric coupling between a ferromagnet and a ferroelectric material. Modeling indicates that here the switching originates from a modification of the La0.7Sr0.3MnO3 surface. This modification influences the tunneling of charge carriers and thus both the electrical resistance and the tunneling magnetoresistance which occurs at pinholes in the organic layer.

Current-induced magnetic switching of a single molecule magnet on a spin valve

International Nuclear Information System (INIS)

Zhang, Xiao; Wang, Zheng-Chuan; Zheng, Qing-Rong; Zhu, Zheng-Gang; Su, Gang

2015-01-01

The current-induced magnetic switching of a single-molecule magnet (SMM) attached on the central region of a spin valve is explored, and the condition for the switching current is derived. Electrons flowing through the spin valve will interact with the SMM via the s–d exchange interaction, producing the spin accumulation that satisfies the spin diffusion equation. We further describe the spin motion of the SMM by a Heisenberg-like equation. Based on the linear stability analysis, we obtain the critical current from two coupled equations. The results of the critical current versus the external magnetic field indicate that one can manipulate the magnetic state of the SMM by an external magnetic field. - Highlights: • We theoretically study the current-induced magnetic switching of the SMM. • We describe the spin motion of the SMM by a Heisenberg-like equation. • We describe the spin accumulation by the spin diffusion equation. • We obtain the critical current by the linear stability analysis. • Our approach can be easily extended to other SMMs

Current-induced magnetic switching of a single molecule magnet on a spin valve

Energy Technology Data Exchange (ETDEWEB)

Zhang, Xiao [Theoretical Condensed Matter Physics and Computational Materials Physics Laboratory, School of Physics, University of Chinese Academy of Sciences, Beijing 100049 (China); Wang, Zheng-Chuan, E-mail: wangzc@ucas.ac.cn [Theoretical Condensed Matter Physics and Computational Materials Physics Laboratory, School of Physics, University of Chinese Academy of Sciences, Beijing 100049 (China); Zheng, Qing-Rong [Theoretical Condensed Matter Physics and Computational Materials Physics Laboratory, School of Physics, University of Chinese Academy of Sciences, Beijing 100049 (China); Zhu, Zheng-Gang [Theoretical Condensed Matter Physics and Computational Materials Physics Laboratory, School of Physics, University of Chinese Academy of Sciences, Beijing 100049 (China); School of Electronics, Electric and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049 (China); Su, Gang, E-mail: gsu@ucas.ac.cn [Theoretical Condensed Matter Physics and Computational Materials Physics Laboratory, School of Physics, University of Chinese Academy of Sciences, Beijing 100049 (China)

2015-04-17

The current-induced magnetic switching of a single-molecule magnet (SMM) attached on the central region of a spin valve is explored, and the condition for the switching current is derived. Electrons flowing through the spin valve will interact with the SMM via the s–d exchange interaction, producing the spin accumulation that satisfies the spin diffusion equation. We further describe the spin motion of the SMM by a Heisenberg-like equation. Based on the linear stability analysis, we obtain the critical current from two coupled equations. The results of the critical current versus the external magnetic field indicate that one can manipulate the magnetic state of the SMM by an external magnetic field. - Highlights: • We theoretically study the current-induced magnetic switching of the SMM. • We describe the spin motion of the SMM by a Heisenberg-like equation. • We describe the spin accumulation by the spin diffusion equation. • We obtain the critical current by the linear stability analysis. • Our approach can be easily extended to other SMMs.

Stability analysis of perpendicular magnetic trilayers with a field-like spin torque

International Nuclear Information System (INIS)

Wang, Ri-Xing; Zhao, Jing-Li; He, Peng-Bin; Gu, Guan-Nan; Li, Zai-Dong; Pan, An-Lian; Liu, Quan-Hui

2013-01-01

We have analytically studied the magnetization dynamics in magnetic trilayers with perpendicular anisotropy for both free and pinned layers. By linear stability analysis, we obtain the phase diagram parameterized by the current, magnetic field and relative strength of the field-like spin torque to Slonczewski torque. Under the control of the current and external magnetic field, several magnetic states, such as quasi-parallel and quasi-antiparallel stable states, out-of-plane precession, and bistable states can be realized. The precession frequency can be expressed as a function of the current and external magnetic field. In addition, the presence of field-like spin torque can change the switching current and precession frequency. - Highlights: ► The phase diagram is obtained by linear stability analysis. ► The precession frequency can be controlled by the current and magnetic field. ► Field-like spin torque can change instability current and precession frequency.

Colossal X-Ray-Induced Persistent Photoconductivity in Current-Perpendicular-to-Plane Ferroelectric/Semiconductor Junctions

KAUST Repository

Hu, Weijin

2017-12-07

Persistent photoconductivity (PPC) is an intriguing physical phenomenon, where electric conduction is retained after the termination of electromagnetic radiation, which makes it appealing for applications in a wide range of optoelectronic devices. So far, PPC has been observed in bulk materials and thin-film structures, where the current flows in the plane, limiting the magnitude of the effect. Here using epitaxial Nb:SrTiO3/Sm0.1Bi0.9FeO3/Pt junctions with a current-perpendicular-to-plane geometry, a colossal X-ray-induced PPC (XPPC) is achieved with a magnitude of six orders. This PPC persists for days with negligible decay. Furthermore, the pristine insulating state could be fully recovered by thermal annealing for a few minutes. Based on the electric transport and microstructure analysis, this colossal XPPC effect is attributed to the X-ray-induced formation and ionization of oxygen vacancies, which drives nonvolatile modification of atomic configurations and results in the reduction of interfacial Schottky barriers. This mechanism differs from the conventional mechanism of photon-enhanced carrier density/mobility in the current-in-plane structures. With their persistent nature, such ferroelectric/semiconductor heterojunctions open a new route toward X-ray sensing and imaging applications.

Spin currents in a normal two-dimensional electron gas in contact with a spin-orbit interaction region

International Nuclear Information System (INIS)

Sukhanov, Aleksei A; Sablikov, Vladimir A; Tkach, Yurii Ya

2009-01-01

Spin effects in a normal two-dimensional (2D) electron gas in lateral contact with a 2D region with spin-orbit interaction are studied. The peculiarity of this system is the presence of spin-dependent scattering of electrons from the interface. This results in an equilibrium edge spin current and nontrivial spin responses to a particle current. We investigate the spatial distribution of the spin currents and spin density under non-equilibrium conditions caused by a ballistic electron current flowing normal or parallel to the interface. The parallel electron current is found to generate a spin density near the interface and to change the edge spin current. The perpendicular electron current changes the edge spin current proportionally to the electron current and produces a bulk spin current penetrating deep into the normal region. This spin current has two components, one of which is directed normal to the interface and polarized parallel to it, and the second is parallel to the interface and is polarized in the plane perpendicular to the contact line. Both spin currents have a high degree of polarization (∼40-60%).

Correlations between atomic structure and giant magnetoresistance ratio in Co2(Fe,Mn)Si spin valves

International Nuclear Information System (INIS)

Lari, L; Sizeland, J; Gilks, D; Uddin, G M; Nedelkoski, Z; Hasnip, P J; Lazarov, V K; Yoshida, K; Galindo, P L; Sato, J; Oogane, M; Ando, Y; Hirohata, A

2014-01-01

We show that the magnetoresistance of Co 2 Fe x Mn 1−x Si-based spin valves, over 70% at low temperature, is directly related to the structural ordering in the electrodes and at the electrodes/spacer (Co 2 Fe x Mn 1−x Si/Ag) interfaces. Aberration-corrected atomic resolution Z-contrast scanning transmission electron microscopy of device structures reveals that annealing at 350 °C and 500 °C creates partial B2/L2 1 and fully L2 1 ordering of electrodes, respectively. Interface structural studies show that the Ag/Co 2 Fe x Mn 1−x Si interface is more ordered compared to the Co 2 Fe x Mn 1−x Si/Ag interface. The release of interface strain is mediated by misfit dislocations that localize the strain around the dislocation cores, and the effect of this strain is assessed by first principles electronic structure calculations. This study suggests that by improving the atomic ordering and strain at the interfaces, further enhancement of the magnetoresistance of CFMS-based current-perpendicular-to-plane spin valves is possible. (fast track communication)

Reduction of shunt current in buffer-free IrMn based spin-valve structures

Science.gov (United States)

Kocaman, B.; Akdoğan, N.

2018-06-01

The presence of thick buffer layers in magnetic sensor devices decreases sensor sensitivity due to shunt currents. With this motivation, we produced IrMn-based spin-valve multilayers without using buffer layer. We also studied the effects of post-annealing and IrMn thickness on exchange bias field (HEB) and blocking temperature (TB) of the system. Magnetization measurements indicate that both HEB and TB values are significantly enhanced with post-annealing of IrMn layer. In addition, we report that IrMn thickness of the system strongly influences the magnetization and transport characteristics of the spin-valve structures. We found that the minimum thickness of IrMn layer is 6 nm in order to achieve the lowest shunt current and high blocking temperature (>300 K). We also investigated the training of exchange bias to check the long-term durability of IrMn-based spin-valve structures for device applications.

Template-grown NiFe/Cu/NiFe nanowires for spin transfer devices

DEFF Research Database (Denmark)

Piraux, L.; Renard, K.; Guillemet, R.

2007-01-01

We have developed a new reliable method combining template synthesis and nanolithography-based contacting technique to elaborate current perpendicular-to-plane giant magnetoresistance spin valve nanowires, which are very promising for the exploration of electrical spin transfer phenomena....... The method allows the electrical connection of one single nanowire in a large assembly of wires embedded in anodic porous alumina supported on Si substrate with diameters and periodicities to be controllable to a large extent. Both magnetic excitations and switching phenomena driven by a spin...

Giant current-perpendicular-to-plane magnetoresistance in multilayer graphene as grown on nickel.

Science.gov (United States)

Bodepudi, S C; Singh, A P; Pramanik, S

2014-05-14

Strong magnetoresistance effects are often observed in ferromagnet-nonmagnet multilayers, which are exploited in state-of-the-art magnetic field sensing and data storage technologies. In this work we report a novel current-perpendicular-to-plane magnetoresistance effect in multilayer graphene as grown on a catalytic nickel surface by chemical vapor deposition. A negative magnetoresistance effect of ∼10(4)% has been observed, which persists even at room temperature. This effect is correlated with the shape of the 2D peak as well as with the occurrence of D peak in the Raman spectrum of the as-grown multilayer graphene. The observed magnetoresistance is extremely high as compared to other known materials systems for similar temperature and field range and can be qualitatively explained within the framework of "interlayer magnetoresistance" (ILMR).

Interface-Enhanced Spin-Orbit Torques and Current-Induced Magnetization Switching of Pd /Co /AlOx Layers

Science.gov (United States)

Ghosh, Abhijit; Garello, Kevin; Avci, Can Onur; Gabureac, Mihai; Gambardella, Pietro

2017-01-01

Magnetic heterostructures that combine large spin-orbit torque efficiency, perpendicular magnetic anisotropy, and low resistivity are key to developing electrically controlled memory and logic devices. Here, we report on vector measurements of the current-induced spin-orbit torques and magnetization switching in perpendicularly magnetized Pd /Co /AlOx layers as a function of Pd thickness. We find sizable dampinglike (DL) and fieldlike (FL) torques, on the order of 1 mT per 107 A /cm2 , which have different thicknesses and magnetization angle dependencies. The analysis of the DL torque efficiency per unit current density and the electric field using drift-diffusion theory leads to an effective spin Hall angle and spin-diffusion length of Pd larger than 0.03 and 7 nm, respectively. The FL spin-orbit torque includes a significant interface contribution, is larger than estimated using drift-diffusion parameters, and, furthermore, is strongly enhanced upon rotation of the magnetization from the out-of-plane to the in-plane direction. Finally, taking advantage of the large spin-orbit torques in this system, we demonstrate bipolar magnetization switching of Pd /Co /AlOx layers with a similar current density to that used for Pt /Co layers with a comparable perpendicular magnetic anisotropy.

Spin Currents and Spin Orbit Torques in Ferromagnets and Antiferromagnets

Science.gov (United States)

Hung, Yu-Ming

This thesis focuses on the interactions of spin currents and materials with magnetic order, e.g., ferromagnetic and antiferromagnetic thin films. The spin current is generated in two ways. First by spin-polarized conduction-electrons associated with the spin Hall effect in heavy metals (HMs) and, second, by exciting spin-waves in ferrimagnetic insulators using a microwave frequency magnetic field. A conduction-electron spin current can be generated by spin-orbit coupling in a heavy non-magnetic metal and transfer its spin angular momentum to a ferromagnet, providing a means of reversing the magnetization of perpendicularly magnetized ultrathin films with currents that flow in the plane of the layers. The torques on the magnetization are known as spin-orbit torques (SOT). In the first part of my thesis project I investigated and contrasted the quasistatic (slowly swept current) and pulsed current-induced switching characteristics of micrometer scale Hall crosses consisting of very thin (magnetized CoFeB layers on beta-Ta. While complete magnetization reversal occurs at a threshold current density in the quasistatic case, pulses with short duration (≤10 ns) and larger amplitude (≃10 times the quasistatic threshold current) lead to only partial magnetization reversal and domain formation. The partial reversal is associated with the limited time for reversed domain expansion during the pulse. The second part of my thesis project studies and considers applications of SOT-driven domain wall (DW) motion in a perpendicularly magnetized ultrathin ferromagnet sandwiched between a heavy metal and an oxide. My experiment results demonstrate that the DW motion can be explained by a combination of the spin Hall effect, which generates a SOT, and Dzyaloshinskii-Moriya interaction, which stabilizes chiral Neel-type DW. Based on SOT-driven DW motion and magnetic coupling between electrically isolated ferromagnetic elements, I proposed a new type of spin logic devices. I then

Magnon Valve Effect between Two Magnetic Insulators

Science.gov (United States)

Wu, H.; Huang, L.; Fang, C.; Yang, B. S.; Wan, C. H.; Yu, G. Q.; Feng, J. F.; Wei, H. X.; Han, X. F.

2018-03-01

The key physics of the spin valve involves spin-polarized conduction electrons propagating between two magnetic layers such that the device conductance is controlled by the relative magnetization orientation of two magnetic layers. Here, we report the effect of a magnon valve which is made of two ferromagnetic insulators (YIG) separated by a nonmagnetic spacer layer (Au). When a thermal gradient is applied perpendicular to the layers, the inverse spin Hall voltage output detected by a Pt bar placed on top of the magnon valve depends on the relative orientation of the magnetization of two YIG layers, indicating the magnon current induced by the spin Seebeck effect at one layer affects the magnon current in the other layer separated by Au. We interpret the magnon valve effect by the angular momentum conversion and propagation between magnons in two YIG layers and conduction electrons in the Au layer. The temperature dependence of the magnon valve ratio shows approximately a power law, supporting the above magnon-electron spin conversion mechanism. This work opens a new class of valve structures beyond the conventional spin valves.

Spin currents of charged Dirac particles in rotating coordinates

Science.gov (United States)

Dayi, Ö. F.; Yunt, E.

2018-03-01

The semiclassical Boltzmann transport equation of charged, massive fermions in a rotating frame of reference, in the presence of external electromagnetic fields is solved in the relaxation time approach to establish the distribution function up to linear order in the electric field in rotating coordinates, centrifugal force and the derivatives. The spin and spin current densities are calculated by means of this distribution function at zero temperature up to the first order. It is shown that the nonequilibrium part of the distribution function yields the spin Hall effect for fermions constrained to move in a plane perpendicular to the angular velocity and magnetic field. Moreover it yields an analogue of Ohm's law for spin currents whose resistivity depends on the external magnetic field and the angular velocity of the rotating frame. Spin current densities in three-dimensional systems are also established.

Tunneling-Magnetoresistance Ratio Comparison of MgO-Based Perpendicular-Magnetic-Tunneling-Junction Spin Valve Between Top and Bottom Co2Fe6B2 Free Layer Structure.

Science.gov (United States)

Lee, Du-Yeong; Lee, Seung-Eun; Shim, Tae-Hun; Park, Jea-Gun

2016-12-01

For the perpendicular-magnetic-tunneling-junction (p-MTJ) spin valve with a nanoscale-thick bottom Co2Fe6B2 free layer ex situ annealed at 400 °C, which has been used as a common p-MTJ structure, the Pt atoms of the Pt buffer layer diffused into the MgO tunneling barrier. This transformed the MgO tunneling barrier from a body-centered cubic (b.c.c) crystallized layer into a mixture of b.c.c, face-centered cubic, and amorphous layers and rapidly decreased the tunneling-magnetoresistance (TMR) ratio. The p-MTJ spin valve with a nanoscale-thick top Co2Fe6B2 free layer could prevent the Pt atoms diffusing into the MgO tunneling barrier during ex situ annealing at 400 °C because of non-necessity of a Pt buffer layer, demonstrating the TMR ratio of ~143 %.

Ultra-fast three terminal perpendicular spin-orbit torque MRAM (Presentation Recording)

Science.gov (United States)

Boulle, Olivier; Cubukcu, Murat; Hamelin, Claire; Lamard, Nathalie; Buda-Prejbeanu, Liliana; Mikuszeit, Nikolai; Garello, Kevin; Gambardella, Pietro; Langer, Juergen; Ocker, Berthold; Miron, Mihai; Gaudin, Gilles

2015-09-01

The discovery that a current flowing in a heavy metal can exert a torque on a neighboring ferromagnet has opened a new way to manipulate the magnetization at the nanoscale. This "spin orbit torque" (SOT) has been demonstrated in ultrathin magnetic multilayers with structural inversion asymmetry (SIA) and high spin orbit coupling, such as Pt/Co/AlOx multilayers. We have shown that this torque can lead to the magnetization switching of a perpendicularly magnetized nanomagnet by an in-plane current injection. The manipulation of magnetization by SOT has led to a novel concept of magnetic RAM memory, the SOT-MRAM, which combines non volatility, high speed, reliability and large endurance. These features make the SOT-MRAM a good candidate to replace SRAM for non-volatile cache memory application. We will present the proof of concept of a perpendicular SOT-MRAM cell composed of a Ta/FeCoB/MgO/FeCoB magnetic tunnel junction and demonstrate ultra-fast (down to 300 ps) deterministic bipolar magnetization switching. Macrospin and micromagnetic simulations including SOT cannot reproduce the experimental results, which suggests that additional physical mechanisms are at stacks. Our results show that SOT-MRAM is fast, reliable and low power, which is promising for non-volatile cache memory application. We will also discuss recent experiments of magnetization reversal in ultrathin multilayers Pt/Co/AlOx by very short (<200 ps) current pulses. We will show that in this material, the Dzyaloshinskii-Moryia interaction plays a key role in the reversal process.

Enhanced current-perpendicular-to-plane giant magnetoresistance effect in half-metallic NiMnSb based nanojunctions with multiple Ag spacers

Energy Technology Data Exchange (ETDEWEB)

Wen, Zhenchao; Yamamoto, Tatsuya [Institute for Materials Research, Tohoku University, Sendai 980-8577 (Japan); Kubota, Takahide; Takanashi, Koki [Institute for Materials Research, Tohoku University, Sendai 980-8577 (Japan); Center for Spintronics Research Network (CSRN), Tohoku University, Sendai 980-8577 (Japan)

2016-06-06

Current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) heterostructure devices using half-metallic NiMnSb Heusler alloy electrodes with single, dual, and triple Ag spacers were fabricated. The NiMnSb alloy films and Ag spacers show (001) epitaxial growth in all CPP-GMR multilayer structures. The dual-spacer CPP-GMR nanojunction exhibited an enhanced CPP-GMR ratio of 11% (a change in the resistance-area product, ΔRA, of 3.9 mΩ μm{sup 2}) at room temperature, which is approximately twice (thrice) of 6% (1.3 mΩ μm{sup 2}) in the single-spacer device. The enhancement of the CPP-GMR effects in the dual-spacer devices could be attributed to improved interfacial spin asymmetry. Moreover, it was observed that the CPP-GMR ratios increased monotonically as the temperatures decreased. At 4.2 K, a CPP-GMR ratio of 41% (ΔRA = 10.5 mΩ μm{sup 2}) was achieved in the dual-spacer CPP-GMR device. This work indicates that multispacer structures provide an efficient enhancement of CPP-GMR effects in half-metallic material-based CPP-GMR systems.

Spin-polarized light-emitting diodes based on organic bipolar spin valves

Science.gov (United States)

Vardeny, Zeev Valentine; Nguyen, Tho Duc; Ehrenfreund, Eitan Avraham

2017-10-25

Spin-polarized organic light-emitting diodes are provided. Such spin-polarized organic light-emitting diodes incorporate ferromagnetic electrodes and show considerable spin-valve magneto-electroluminescence and magneto-conductivity responses, with voltage and temperature dependencies that originate from the bipolar spin-polarized space charge limited current.

Magnetoresistance effect of heat generation in a single-molecular spin-valve

International Nuclear Information System (INIS)

Jiang, Feng; Yan, Yonghong; Wang, Shikuan; Yan, Yijing

2016-01-01

Based on non-equilibrium Green's functions' theory and small polaron transformation's technology, we study the heat generation by current through a single-molecular spin-valve. Numerical results indicate that the variation of spin polarization degree can change heat generation effectively, the spin-valve effect happens not only in electrical current but also in heat generation when Coulomb repulsion in quantum dot is smaller than phonon frequency and interestingly, when Coulomb repulsion is larger than phonon frequency, the inverse spin-valve effect appears by sweeping gate voltage and is enlarged with bias increasing. The inverse spin-valve effect will induce the unique heat magnetoresistance effect, which can be modulated from heat-resistance to heat-gain by gate voltage easily. - Highlights: • Spin-valve effect of heat generation happens when Coulomb repulsion in quantum dot is less than phonon frequency. • When Coulomb repulsion is larger than phonon frequency, inverse spin-valve effect appears and is enlarged with bias increasing. • The variation of spin polarization degree can change heat generation effectively. • The heat magnetoresistance can be modulated from heat-resistance to heat-gain by gate voltage easily.

Spin transfer torque generated magnetic droplet solitons (invited)

International Nuclear Information System (INIS)

Chung, S.; Mohseni, S. M.; Sani, S. R.; Iacocca, E.; Dumas, R. K.; Pogoryelov, Ye.; Anh Nguyen, T. N.; Muduli, P. K.; Eklund, A.; Hoefer, M.; Åkerman, J.

2014-01-01

We present recent experimental and numerical advancements in the understanding of spin transfer torque generated magnetic droplet solitons. The experimental work focuses on nano-contact spin torque oscillators (NC-STOs) based on orthogonal (pseudo) spin valves where the Co fixed layer has an easy-plane anisotropy, and the [Co/Ni] free layer has a strong perpendicular magnetic anisotropy. The NC-STO resistance and microwave signal generation are measured simultaneously as a function of drive current and applied perpendicular magnetic field. Both exhibit dramatic transitions at a certain current dependent critical field value, where the microwave frequency drops 10 GHz, modulation sidebands appear, and the resistance exhibits a jump, while the magnetoresistance changes sign. We interpret these observations as the nucleation of a magnetic droplet soliton with a large fraction of its magnetization processing with an angle greater than 90°, i.e., around a direction opposite that of the applied field. This interpretation is corroborated by numerical simulations. When the field is further increased, we find that the droplet eventually collapses under the pressure from the Zeeman energy

Improved corrosion resistance of spin-valve film

International Nuclear Information System (INIS)

Tetsukawa, H.; Hommura, H.; Okabe, A.; Soda, Y.

2007-01-01

We investigated the corrosion behavior and magnetoresistance of spin-valve film in order to improve the corrosion resistance of the spin-valve head for a tape recording system. The conventional spin-valve head (sub./Ta/NiFe/CoFe/Cu/CoFe/PtMn/Ta) with no diamond-like carbon (DLC) protective layer showed poor corrosion resistance. This is because the CoFe for ferromagnetic layer and Cu for spacer in the spin-valve film exhibited poor corrosion resistance. The corrosion resistance of the CoFe film and Cu film improved with the addition of Ni and Au, respectively. The spin-valve film (sub./Ta/NiFe/CoNiFe/CuAu/CoNiFe/PtMn/Ta) showed higher pitting potential than the conventional spin-valve film by +0.45 V. This presents a significant improvement over the conventional spin-valve film. We also investigated the effect of the composition of ferromagnetic layer and spacer on the magnetoresistance of the spin-valve film. The magnetoresistance of the spin-valve film by substitution of CoNiFe for CoFe in ferromagnetic layer decreased slightly. The magnetoresistance of the spin-valve film decreased as the addition of Au of the spacer increased. The diffusion at CoNiFe/CuAu interface has not been observed in annealing process. The quantitative relation between corrosion resistance and magnetoresistance of spin-valve film, and its ferromagnetic layer and spacer's compositions have been clarified. The output voltage at 50 Oe of the corrosion-resistant spin-valve head with CoNiFe ferromagnetic layer and CuAu spacer was about 50% of that of the conventional spin-valve head

Improved corrosion resistance of spin-valve film

Energy Technology Data Exchange (ETDEWEB)

Tetsukawa, H. [Sony Corporation, 6-7-35 Kitashinagawa, Shinagawa-ku, Tokyo 141-0001 (Japan)]. E-mail: tetsukaw@arc.sony.co.jp; Hommura, H. [Sony Corporation, 6-7-35 Kitashinagawa, Shinagawa-ku, Tokyo 141-0001 (Japan); Okabe, A. [Sony Corporation, 6-7-35 Kitashinagawa, Shinagawa-ku, Tokyo 141-0001 (Japan); Soda, Y. [Sony Corporation, 6-7-35 Kitashinagawa, Shinagawa-ku, Tokyo 141-0001 (Japan)

2007-06-15

We investigated the corrosion behavior and magnetoresistance of spin-valve film in order to improve the corrosion resistance of the spin-valve head for a tape recording system. The conventional spin-valve head (sub./Ta/NiFe/CoFe/Cu/CoFe/PtMn/Ta) with no diamond-like carbon (DLC) protective layer showed poor corrosion resistance. This is because the CoFe for ferromagnetic layer and Cu for spacer in the spin-valve film exhibited poor corrosion resistance. The corrosion resistance of the CoFe film and Cu film improved with the addition of Ni and Au, respectively. The spin-valve film (sub./Ta/NiFe/CoNiFe/CuAu/CoNiFe/PtMn/Ta) showed higher pitting potential than the conventional spin-valve film by +0.45 V. This presents a significant improvement over the conventional spin-valve film. We also investigated the effect of the composition of ferromagnetic layer and spacer on the magnetoresistance of the spin-valve film. The magnetoresistance of the spin-valve film by substitution of CoNiFe for CoFe in ferromagnetic layer decreased slightly. The magnetoresistance of the spin-valve film decreased as the addition of Au of the spacer increased. The diffusion at CoNiFe/CuAu interface has not been observed in annealing process. The quantitative relation between corrosion resistance and magnetoresistance of spin-valve film, and its ferromagnetic layer and spacer's compositions have been clarified. The output voltage at 50 Oe of the corrosion-resistant spin-valve head with CoNiFe ferromagnetic layer and CuAu spacer was about 50% of that of the conventional spin-valve head.

Enhanced magnetoresistance in graphene spin valve

Energy Technology Data Exchange (ETDEWEB)

Iqbal, Muhammad Zahir, E-mail: zahir.upc@gmail.com [Faculty of Engineering Sciences, GIK Institute of Engineering Sciences and Technology, Topi 23640, Khyber Pakhtunkhwa (Pakistan); Hussain, Ghulam [Faculty of Engineering Sciences, GIK Institute of Engineering Sciences and Technology, Topi 23640, Khyber Pakhtunkhwa (Pakistan); Siddique, Salma [Department of Bioscience & Biotechnology, Sejong University, Seoul 143-747 (Korea, Republic of); Iqbal, Muhammad Waqas [Department of Physics, Riphah Institute of Computing and Applied Sciences (RICAS), Riphah International University, Lahore (Pakistan)

2017-05-01

Graphene has been explored as a promising candidate for spintronics due to its atomically flat structure and novel properties. Here we fabricate two spin valve junctions, one from directly grown graphene on Ni electrode (DG) and other from transferred graphene (TG). The magnetoresistance (MR) ratio for DG device is found to be higher than TG device i.e. ~0.73% and 0.14%, respectively. Also the spin polarization of Ni electrode is determined to be 6.03% at room temperature in case of DG device, however it reduces to 2.1% for TG device. From this analysis, we infer how environmental exposure of the sample degrades the spin properties of the magnetic junctions. Moreover, the transport measurements reveal linear behavior for current-voltage (I-V) characteristics, indicating ohmic behavior of the junctions. Our findings unveil the efficiency of direct growth of graphene for spin filtering mechanism in spin valve devices.

Voltage-driven versus current-driven spin torque in anisotropic tunneling junctions

KAUST Repository

Manchon, Aurelien

2011-01-01

Nonequilibrium spin transport in a magnetic tunnel junction comprising a single magnetic layer in the presence of interfacial spin-orbit interaction (SOI) is studied theoretically. The interfacial SOI generates a spin torque of the form T=T∥ M×(z× M)+T⊥ z× M, even in the absence of an external spin polarizer. For thick and large tunnel barriers, the torque reduces to the perpendicular component T⊥, which can be electrically tuned by applying a voltage across the insulator. In the limit of thin and low tunnel barriers, the in-plane torque T∥ emerges, proportional to the tunneling current density. Experimental implications on magnetic devices are discussed. © 2011 IEEE.

Voltage-driven versus current-driven spin torque in anisotropic tunneling junctions

KAUST Repository

Manchon, Aurelien

2011-10-01

Nonequilibrium spin transport in a magnetic tunnel junction comprising a single magnetic layer in the presence of interfacial spin-orbit interaction (SOI) is studied theoretically. The interfacial SOI generates a spin torque of the form T=T∥ M×(z× M)+T⊥ z× M, even in the absence of an external spin polarizer. For thick and large tunnel barriers, the torque reduces to the perpendicular component T⊥, which can be electrically tuned by applying a voltage across the insulator. In the limit of thin and low tunnel barriers, the in-plane torque T∥ emerges, proportional to the tunneling current density. Experimental implications on magnetic devices are discussed. © 2011 IEEE.

Effective suppression of thermoelectric voltage in nonlocal spin-valve measurement

Science.gov (United States)

Ariki, Taisei; Nomura, Tatsuya; Ohnishi, Kohei; Kimura, Takashi

2017-06-01

We demonstrate that the background signal in the nonlocal spin-valve measurement can be sufficiently suppressed by optimizing the electrode design of the lateral spin valve. A relatively long length scale of heat propagation produces spin-independent thermoelectric signals under the combination of the Peltier and Seebeck effects. These unfavorable signals can be reduced by mixing the Peltier effects in two transparent ferromagnetic/nonmagnetic junctions. Proper understanding of the contribution from the heat current in no spin-current area is a key for effective reduction of the spin-independent background signal.

Large spin-valve effect in a lateral spin-valve device based on ferromagnetic semiconductor GaMnAs

Science.gov (United States)

Asahara, Hirokatsu; Kanaki, Toshiki; Ohya, Shinobu; Tanaka, Masaaki

2018-03-01

We investigate the spin-dependent transport properties of a lateral spin-valve device based on the ferromagnetic semiconductor GaMnAs. This device is composed of a GaMnAs channel layer grown on GaAs with a narrow trench across the channel. Its current-voltage characteristics show tunneling behavior. Large magnetoresistance (MR) ratios of more than ˜10% are obtained. These values are much larger than those (˜0.1%) reported for lateral-type spin metal-oxide-semiconductor field-effect transistors. The magnetic field direction dependence of the MR curve differs from that of the anisotropic magnetoresistance of GaMnAs, which confirms that the MR signal originates from the spin-valve effect between the GaMnAs electrodes.

Achieving perpendicular anisotropy in half-metallic Heusler alloys for spin device applications

Science.gov (United States)

Munira, Kamaram; Romero, Jonathon; Butler, William H.

2014-05-01

Various full Heusler alloys are interfaced with MgO and the magnetic properties of the Heusler-MgO junctions are studied. Next to MgO, the cubic Heusler system distorts to a tetragonal one, thereby inducing an anisotropy. The half-metallicity and nature of anisotropy (in-plane or perpendicular) in the Heusler-MgO system is governed mostly by the interface Heusler layers. There is a trend that Mn-O bonding near the MgO-Heusler junction results in perpendicular anisotropy. The ability to remain half-metallic and have perpendicular anisotropy makes some of these alloys potential candidates as free-layers in Spin Transfer Torque Random Access Memory (STT-RAM) devices, particularly, Cr2MnAs-MgO system with MnAs interface layers and Co2MnSi-MgO system with Mn2 interface layers.

Magnon detection using a ferroic collinear multilayer spin valve.

Science.gov (United States)

Cramer, Joel; Fuhrmann, Felix; Ritzmann, Ulrike; Gall, Vanessa; Niizeki, Tomohiko; Ramos, Rafael; Qiu, Zhiyong; Hou, Dazhi; Kikkawa, Takashi; Sinova, Jairo; Nowak, Ulrich; Saitoh, Eiji; Kläui, Mathias

2018-03-14

Information transport and processing by pure magnonic spin currents in insulators is a promising alternative to conventional charge-current-driven spintronic devices. The absence of Joule heating and reduced spin wave damping in insulating ferromagnets have been suggested for implementing efficient logic devices. After the successful demonstration of a majority gate based on the superposition of spin waves, further components are required to perform complex logic operations. Here, we report on magnetization orientation-dependent spin current detection signals in collinear magnetic multilayers inspired by the functionality of a conventional spin valve. In Y 3 Fe 5 O 12 |CoO|Co, we find that the detection amplitude of spin currents emitted by ferromagnetic resonance spin pumping depends on the relative alignment of the Y 3 Fe 5 O 12 and Co magnetization. This yields a spin valve-like behavior with an amplitude change of 120% in our systems. We demonstrate the reliability of the effect and identify its origin by both temperature-dependent and power-dependent measurements.

Vortex Flipping in Superconductor-Ferromagnet Spin Valve Structures

Science.gov (United States)

Patino, Edgar J.; Aprili, Marco; Blamire, Mark; Maeno, Yoshiteru

2014-03-01

We report in plane magnetization measurements on Ni/Nb/Ni/CoO and Co/Nb/Co/CoO spin valve structures with one of the ferromagnetic layers pinned by an antiferromagnetic layer. In samples with Ni, below the superconducting transition Tc, our results show strong evidence of vortex flipping driven by the ferromagnets magnetization. This is a direct consequence of proximity effect that leads to vortex supercurrents leakage into the ferromagnets. Here the polarized electron spins are subject to vortices magnetic field occasioning vortex flipping. Such novel mechanism has been made possible for the first time by fabrication of the F/S/F/AF multilayered spin valves with a thin-enough S layer to barely confine vortices inside as well as thin-enough F layers to align and control the magnetization within the plane. When Co is used there is no observation of vortex flipping effect. This is attributed to Co shorter coherence length. Interestingly instead a reduction in pinning field of about 400 Oe is observed when the Nb layer is in superconducting state. This effect cannot be explained in terms of vortex fields. In view of these facts any explanation must be directly related to proximity effect and thus a remarkable phenomenon that deserves further investigation. Programa Nacional de Ciencias Basicas COLCIENCIAS (No. 120452128168).

Theory of in-plane current induced spin torque in metal/ferromagnet bilayers

Science.gov (United States)

Sakanashi, Kohei; Sigrist, Manfred; Chen, Wei

2018-05-01

Using a semiclassical approach that simultaneously incorporates the spin Hall effect (SHE), spin diffusion, quantum well states, and interface spin–orbit coupling (SOC), we address the interplay of these mechanisms as the origin of the spin–orbit torque (SOT) induced by in-plane currents, as observed in the normal metal/ferromagnetic metal bilayer thin films. Focusing on the bilayers with a ferromagnet much thinner than its spin diffusion length, such as Pt/Co with  ∼10 nm thickness, our approach addresses simultaneously the two contributions to the SOT, namely the spin-transfer torque (SHE-STT) due to SHE-induced spin injection, and the inverse spin Galvanic effect spin–orbit torque (ISGE-SOT) due to SOC-induced spin accumulation. The SOC produces an effective magnetic field at the interface, hence it modifies the angular momentum conservation expected for the SHE-STT. The SHE-induced spin voltage and the interface spin current are mutually dependent and, hence, are solved in a self-consistent manner. The result suggests that the SHE-STT and ISGE-SOT are of the same order of magnitude, and the spin transport mediated by the quantum well states may be an important mechanism for the experimentally observed rapid variation of the SOT with respect to the thickness of the ferromagnet.

Spin motive forces, 'measurements', and spin-valves

International Nuclear Information System (INIS)

Barnes, S.E.

2007-01-01

Discussed is the spin motive force (smf) produced by a spin valve, this reflecting its dynamics. Relaxation implies an implicit measurement of the magnetization of the free layer of a valve. It is shown this has implications for the angular dependence of the torque transfer. Some discussion of recent experiments is included

Pure spin polarized current through a full magnetic silicene junction

Science.gov (United States)

Lorestaniweiss, Zeinab; Rashidian, Zeinab

2018-06-01

Using the Landauer-Buttiker formula, we investigate electronic transport in silicene junction composed of ferromagnetic silicene. The direction of magnetization in the middle region may change in a plane perpendicular to the junction, whereas the magnetization direction keep fixed upward in silicene electrodes. We investigate how the various magnetization directions in the middle region affect the electronic transport. We demonstrate that conductance depends on the orientation of magnetizations in the middle region. It is found that by changing the direction of the magnetization in the middle region, a pure spin up current can be achieved. This achievement makes this full magnetic junction a good design for a full spin-up current polarizer.

Spin relaxation through Kondo scattering in Cu/Py lateral spin valves

Science.gov (United States)

Batley, J. T.; Rosaond, M. C.; Ali, M.; Linfield, E. H.; Burnell, G.; Hickey, B. J.

Within non-magnetic metals it is reasonable to expect the Elliot-Yafet mechanism to govern spin-relaxation and thus the temperature dependence of the spin diffusion length might be inversely proportional to resistivity. However, in lateral spin valves, measurements have found that at low temperatures the spin diffusion length unexpectedly decreases. We have fabricated lateral spin valves from Cu with different concentrations of magnetic impurities. Through temperature dependent charge and spin transport measurements we present clear evidence linking the presence of the Kondo effect within Cu to the suppression of the spin diffusion length below 30 K. We have calculated the spin-relaxation rate and isolated the contribution from magnetic impurities. At very low temperatures electron-electron interactions play a more prominent role in the Kondo effect. Well below the Kondo temperature a strong-coupling regime exists, where the moments become screened and the magnetic dephasing rate is reduced. We also investigate the effect of this low temperature regime (>1 K) on a pure spin current. This work shows the dominant role of Kondo scattering, even in low concentrations of order 1 ppm, within pure spin transport.

Some remarks about large p/sub perpendicular/ spin effects

International Nuclear Information System (INIS)

Field, R.D.

1977-01-01

A discussion of the ingredients necessary to make predictions concerning single and double spin measurements in large p/sub perpendicular to/ inclusive processes is presented. Remarks are made as to what might be expected and what might be learned from such measurements. Various models for the production of large p/sub perpendicular to/ mesons have quite different spin structure and hence can be expected to give differing predictions. However, it is not possible at this time to make quantitative calculations, and it is possible (not probable) that the interesting spin observables will be negligibly small

Spin-resolved electron waiting times in a quantum-dot spin valve

Science.gov (United States)

Tang, Gaomin; Xu, Fuming; Mi, Shuo; Wang, Jian

2018-04-01

We study the electronic waiting-time distributions (WTDs) in a noninteracting quantum-dot spin valve by varying spin polarization and the noncollinear angle between the magnetizations of the leads using the scattering matrix approach. Since the quantum-dot spin valve involves two channels (spin up and down) in both the incoming and outgoing channels, we study three different kinds of WTDs, which are two-channel WTD, spin-resolved single-channel WTD, and cross-channel WTD. We analyze the behaviors of WTDs in short times, correlated with the current behaviors for different spin polarizations and noncollinear angles. Cross-channel WTD reflects the correlation between two spin channels and can be used to characterize the spin-transfer torque process. We study the influence of the earlier detection on the subsequent detection from the perspective of cross-channel WTD, and define the influence degree quantity as the cumulative absolute difference between cross-channel WTDs and first-passage time distributions to quantitatively characterize the spin-flip process. We observe that influence degree versus spin-transfer torque for different noncollinear angles as well as different polarizations collapse into a single curve showing universal behaviors. This demonstrates that cross-channel WTDs can be a pathway to characterize spin correlation in spintronics system.

Collective coordinate models of domain wall motion in perpendicularly magnetized systems under the spin hall effect and longitudinal fields

Energy Technology Data Exchange (ETDEWEB)

Nasseri, S. Ali, E-mail: ali.nasseri@isi.it [ISI Foundation - Via Alassio 11/c –10126 Torino (Italy); Politecnico di Torino - Corso Duca degli Abruzzi 24, 10129 Torino (Italy); Moretti, Simone; Martinez, Eduardo [University of Salamanca - Cardenal Plá y Deniel, 22, 37008 Salamanca (Spain); Serpico, Claudio [ISI Foundation - Via Alassio 11/c –10126 Torino (Italy); University of Naples Federico II - Via Claudio 21, 80125 Napoli (Italy); Durin, Gianfranco [ISI Foundation - Via Alassio 11/c –10126 Torino (Italy); Istituto Nazionale di Ricerca Metrologica (INRIM) - Strada delle Cacce 91, 10135 Torino (Italy)

2017-03-15

Recent studies on heterostructures of ultrathin ferromagnets sandwiched between a heavy metal layer and an oxide have highlighted the importance of spin-orbit coupling (SOC) and broken inversion symmetry in domain wall (DW) motion. Specifically, chiral DWs are stabilized in these systems due to the Dzyaloshinskii-Moriya interaction (DMI). SOC can also lead to enhanced current induced DW motion, with the Spin Hall effect (SHE) suggested as the dominant mechanism for this observation. The efficiency of SHE driven DW motion depends on the internal magnetic structure of the DW, which could be controlled using externally applied longitudinal in-plane fields. In this work, micromagnetic simulations and collective coordinate models are used to study current-driven DW motion under longitudinal in-plane fields in perpendicularly magnetized samples with strong DMI. Several extended collective coordinate models are developed to reproduce the micromagnetic results. While these extended models show improvements over traditional models of this kind, there are still discrepancies between them and micromagnetic simulations which require further work. - Highlights: • Moving DWs in PMA material maintain their structure under longitudinal in-plane fields. • As a result of longitudinal fields, magnetization in the domains becomes canted. • A critical longitudinal field was identified and correlated with the DMI strength. • A canted collective coordinate model was developed for DW motion under in-plane fields.

Spin Switching via Quantum Dot Spin Valves

Science.gov (United States)

Gergs, N. M.; Bender, S. A.; Duine, R. A.; Schuricht, D.

2018-01-01

We develop a theory for spin transport and magnetization dynamics in a quantum dot spin valve, i.e., two magnetic reservoirs coupled to a quantum dot. Our theory is able to take into account effects of strong correlations. We demonstrate that, as a result of these strong correlations, the dot gate voltage enables control over the current-induced torques on the magnets and, in particular, enables voltage-controlled magnetic switching. The electrical resistance of the structure can be used to read out the magnetic state. Our model may be realized by a number of experimental systems, including magnetic scanning-tunneling microscope tips and artificial quantum dot systems.

Anomalous superconducting spin-valve effect in NbN/FeN/Cu/FeN/FeMn multilayers

Energy Technology Data Exchange (ETDEWEB)

Hwang, Tae Jong; Kim, Dong Ho [Yeungnam University, Gyeongsan (Korea, Republic of)

2017-09-15

We have studied magnetic and transport properties of NbN/FeN/Cu/FeN/FeMn spin-valve structure. In-plane magnetic moment exhibited typical hysteresis loops of spin valves in the normal state of NbN film at 20 K. On the other hand, the magnetic hysteresis loop in the superconducting state exhibited more complex behavior in which exchange bias provided by antiferrmagnetic FeMn layer to adjacent FeN layer was disturbed by superconductivity. Because of this, the ideal superconducting spin-valve effect was not detected. Instead the stray field originated from unsaturated magnetic states dominated the transport properties of NbN/FeN/Cu/FeN/FeMn multilayer.

Coherent spin transport through a 350 micron thick silicon wafer.

Science.gov (United States)

Huang, Biqin; Monsma, Douwe J; Appelbaum, Ian

2007-10-26

We use all-electrical methods to inject, transport, and detect spin-polarized electrons vertically through a 350-micron-thick undoped single-crystal silicon wafer. Spin precession measurements in a perpendicular magnetic field at different accelerating electric fields reveal high spin coherence with at least 13pi precession angles. The magnetic-field spacing of precession extrema are used to determine the injector-to-detector electron transit time. These transit time values are associated with output magnetocurrent changes (from in-plane spin-valve measurements), which are proportional to final spin polarization. Fitting the results to a simple exponential spin-decay model yields a conduction electron spin lifetime (T1) lower bound in silicon of over 500 ns at 60 K.

Perpendicular magnetic anisotropy influence on voltage-driven spin-diode effect in magnetic tunnel junctions: A micromagnetic study

Energy Technology Data Exchange (ETDEWEB)

Frankowski, Marek, E-mail: mfrankow@agh.edu.pl [AGH University of Science and Technology, al. Mickiewicza 30, Department of Electronics, 30-059 Kraków (Poland); Chȩciński, Jakub [AGH University of Science and Technology, al. Mickiewicza 30, Department of Electronics, 30-059 Kraków (Poland); AGH University of Science and Technology, al. Mickiewicza 30, Faculty of Physics and Applied Computer Science, 30-059 Kraków (Poland); Skowroński, Witold; Stobiecki, Tomasz [AGH University of Science and Technology, al. Mickiewicza 30, Department of Electronics, 30-059 Kraków (Poland)

2017-05-01

We study the influence of the perpendicular magnetic anisotropy on the voltage-induced ferromagnetic resonance in magnetic tunnel junctions (MTJs). An MTJ response to the applied radio-frequency voltage excitation is investigated using micromagnetic calculations with the free layer oriented both in-plane and out-of-plane. Our model allows for a quantitative description of the magnetic system parameters such as resonance frequency, sensitivity or quality factor and for a distinction between material-dependent internal damping and disorder-dependent effective damping. We find that the sensitivity abruptly increases up to three orders of magnitude near the anisotropy transition regime, while the quality factor declines due to effective damping increase. We attribute the origin of this behaviour to the changes of the exchange energy in the system, which is calculated using micromagnetic approach. - Highlights: • Micromagnetic approach is used for modelling of voltage-induced spin-diode effect. • Voltage-induced switching simulations are performed. • Spin-diode line is analyzed as a function of perpendicular anisotropy energy. • Effective damping, quality factor and sensitivity are calculated.

Spin transport at high temperatures in epitaxial Heusler alloy/n-GaAs lateral spin valves

Science.gov (United States)

Peterson, Timothy A.; Christie, Kevin D.; Patel, Sahil J.; Crowell, Paul A.; Palmstrøm, Chris J.

2015-03-01

We report on electrical injection and detection of spin accumulation in ferromagnet/ n-GaAs lateral spin-valve devices, observed up to and above room temperature. The ferromagnet in these measurements is the Heusler alloy Co2FeSi, and the semiconductor channel is GaAs doped at 3 ×1016 cm-3. The spin signal is enhanced by operating the detection contact under forward bias. The enhancement originates from drift effects at low-temperatures and an increase of the detection efficiency at all temperatures. The detector bias dependence of the observed spin-valve signal is interpreted by taking into account the quantum well (QW) which forms in the degenerately doped region immediately behind the Schottky tunnel barrier. In particular, we believe the QW is responsible for the minority spin accumulation (majority spin current) under large forward bias. The spin diffusion length and lifetime are determined by measuring the separation dependence of the non-local spin valve signal in a family of devices patterned by electron beam lithography. A spin diffusion length of 700 nm and lifetime of 46 picoseconds are found at a temperature of 295 K. This work was supported by the NSF under DMR-1104951, the NSF MRSEC program and C-SPIN, a SRC STARNET center sponsored by MARCO and DARPA.

Spin filter effect of hBN/Co detector electrodes in a 3D topological insulator spin valve

Science.gov (United States)

Vaklinova, Kristina; Polyudov, Katharina; Burghard, Marko; Kern, Klaus

2018-03-01

Topological insulators emerge as promising components of spintronic devices, in particular for applications where all-electrical spin control is essential. While the capability of these materials to generate spin-polarized currents is well established, only very little is known about the spin injection/extraction into/out of them. Here, we explore the switching behavior of lateral spin valves comprising the 3D topological insulator Bi2Te2Se as channel, which is separated from ferromagnetic Cobalt detector contacts by an ultrathin hexagonal boron nitride (hBN) tunnel barrier. The corresponding contact resistance displays a notable variation, which is correlated with a change of the switching characteristics of the spin valve. For contact resistances below ~5 kΩ, the hysteresis in the switching curve reverses upon reversing the applied current, as expected for spin-polarized currents carried by the helical surface states. By contrast, for higher contact resistances an opposite polarity of the hysteresis loop is observed, which is independent of the current direction, a behavior signifying negative spin detection efficiency of the multilayer hBN/Co contacts combined with bias-induced spin signal inversion. Our findings suggest the possibility to tune the spin exchange across the interface between a ferromagnetic metal and a topological insulator through the number of intervening hBN layers.

Spin-Orbit Torques in Co/Pd Multilayer Nanowires

KAUST Repository

Jamali, Mahdi; Narayanapillai, Kulothungasagaran; Qiu, Xuepeng; Loong, Li Ming; Manchon, Aurelien; Yang, Hyunsoo

2013-01-01

Current induced spin-orbit torques have been studied in ferromagnetic nanowires made of 20 nm thick Co/Pd multilayers with perpendicular magnetic anisotropy. Using Hall voltage and lock-in measurements, it is found that upon injection of an electric current both in-plane (Slonczewski-like) and perpendicular (fieldlike) torques build up in the nanowire. The torque efficiencies are found to be as large as 1.17 and 5 kOe at 108  A/cm2 for the in-plane and perpendicular components, respectively, which is surprisingly comparable to previous studies in ultrathin (∼1  nm) magnetic bilayers. We show that this result cannot be explained solely by spin Hall effect induced torque at the outer interfaces, indicating a probable contribution of the bulk of the Co/Pd multilayer.

Spin-Orbit Torques in Co/Pd Multilayer Nanowires

KAUST Repository

Jamali, Mahdi

2013-12-09

Current induced spin-orbit torques have been studied in ferromagnetic nanowires made of 20 nm thick Co/Pd multilayers with perpendicular magnetic anisotropy. Using Hall voltage and lock-in measurements, it is found that upon injection of an electric current both in-plane (Slonczewski-like) and perpendicular (fieldlike) torques build up in the nanowire. The torque efficiencies are found to be as large as 1.17 and 5 kOe at 108  A/cm2 for the in-plane and perpendicular components, respectively, which is surprisingly comparable to previous studies in ultrathin (∼1  nm) magnetic bilayers. We show that this result cannot be explained solely by spin Hall effect induced torque at the outer interfaces, indicating a probable contribution of the bulk of the Co/Pd multilayer.

Analytical description of ballistic spin currents and torques in magnetic tunnel junctions

KAUST Repository

Chshiev, M.

2015-09-21

In this work we demonstrate explicit analytical expressions for both charge and spin currents which constitute the 2×2 spinor in magnetic tunnel junctions with noncollinear magnetizations under applied voltage. The calculations have been performed within the free electron model in the framework of the Keldysh formalism and WKB approximation. We demonstrate that spin/charge currents and spin transfer torques are all explicitly expressed through only three irreducible quantities, without further approximations. The conditions and mechanisms of deviation from the conventional sine angular dependence of both spin currents and torques are shown and discussed. It is shown in the thick barrier approximation that all tunneling transport quantities can be expressed in an extremely simplified form via Slonczewski spin polarizations and our effective spin averaged interfacial transmission probabilities and effective out-of-plane polarizations at both interfaces. It is proven that the latter plays a key role in the emergence of perpendicular spin torque as well as in the angular dependence character of all spin and charge transport considered. It is demonstrated directly also that for any applied voltage, the parallel component of spin current at the FM/I interface is expressed via collinear longitudinal spin current components. Finally, spin transfer torque behavior is analyzed in a view of transverse characteristic length scales for spin transport.

Experimental investigation on in-plane/out-of-plane vortex-induced vibrations of curved cylinder in parallel and perpendicular flows

Science.gov (United States)

Srinil, Narakorn; Ma, Bowen; Zhang, Licong

2018-05-01

This study is motivated by an industrial need to better understand the vortex-induced vibration (VIV) of a curved structure subject to current flows with varying directions whose data for model calibration and validation are lacking. In this paper, new experimental investigations on the two-degree-of-freedom in-plane/out-of-plane VIV of a rigid curved circular cylinder immersed in steady and uniform free-stream flows are presented. The principal objective is to examine how the approaching flow direction versus the cylinder curvature plane affects cross-flow and in-line VIV and the associated hydrodynamic properties. This is achieved by testing the curved cylinder in 3 different flow orientations comprising the parallel flows aligned with the curvature vertical plane in convex and concave configurations, and the flows perpendicular to the curvature plane. The case of varying flow velocities in a subcritical flow range with a maximum Reynolds number of about 50,000 is considered for the curved cylinder with a low mass ratio and damping ratio. Experimental results are presented and discussed in terms of the cylinder response amplitudes, inclination angles, mean displacements, motion trajectories, oscillation frequencies, hydrodynamic forces, relative phases, fluid excitation and added inertia coefficients. Comparisons with other experimental results of curved and straight cylinder VIV are also presented. The experiments highlight the important effects of cylinder curvature versus flow orientation on the combined cross-flow/in-line VIV. The maximum (minimum) responses occur in the perpendicular (convex) flow case whereas the extended lower-branch responses occur in the concave flow case. For perpendicular flows, some meaningful features are observed, including the appearances of cross-flow mean displacements and asymmetric eight-shaped motion trajectories due to multiple 2:1:1 resonances where two out-of-plane and one in-plane dominant frequencies are simultaneously

Spin injection and spin accumulation in all-metal mesoscopic spin valves

NARCIS (Netherlands)

Jedema, FJ; Nijboer, MS; Filip, AT; van Wees, BJ

2003-01-01

We study the electrical injection and detection of spin accumulation in lateral ferromagnetic-metal-nonmagnetic-metal-ferromagnetic-metal (F/N/F) spin valve devices with transparent interfaces. Different ferromagnetic metals, Permalloy (Py), cobalt (Co), and nickel (Ni), are used as electrical spin

Effect of spin structure transition in IrMn on the CoPd/IrMn perpendicular exchange biased system

Energy Technology Data Exchange (ETDEWEB)

Janjua, Muhammad Bilal; Guentherodt, Gernot [II. Physikalisches Institut A, RWTH Aachen University, Aachen (Germany)

2011-07-01

The exchange bias (EB) phenomenon is studied in MBE grown Pd(10 nm)/CoPd(x=8,16,30 nm)/IrMn(15 nm)/Pd(4 nm) samples, which exhibit a perpendicular anisotropy of Co22Pd78. These samples are field cooled along the out-of-plane direction and hysteresis loops are measured along both the out-of-plane and in-plane directions. It is observed that there is a transition temperature where the out-of-plane EB becomes greater than the in-plane EB. This behavior of EB is an evidence of the change in the spin structure of the given system, which is also revealed by the magnetization versus temperature measurements of the exchange biased and of the sole IrMn samples. It is found that with increasing temperature there is a spin structure transition in Ir25Mn75 (15nm) related to the 2Q to 3Q transition in the bulk, which is responsible for the increase in out-of-plane EB. A vertical shift in the hysteresis loop is also observed in these exchange biased samples at low temperatures (T<50 K).

Graphene spin valve: An angle sensor

Energy Technology Data Exchange (ETDEWEB)

Iqbal, Muhammad Zahir, E-mail: zahir.upc@gmail.com [Faculty of Engineering Sciences, GIK Institute of Engineering Sciences and Technology, Topi 23640, Khyber Pakhtunkhwa (Pakistan); Hussain, Ghulam [Faculty of Engineering Sciences, GIK Institute of Engineering Sciences and Technology, Topi 23640, Khyber Pakhtunkhwa (Pakistan); Siddique, Salma [Department of Bioscience & Biotechnology, Sejong University, Seoul 143-747 (Korea, Republic of); Iqbal, Muhammad Waqas [Department of Physics, Riphah Institute of Computing and Applied Sciences (RICAS), Riphah International University, Lahore (Pakistan)

2017-06-15

Graphene spin valves can be optimized for various spintronic applications by tuning the associated experimental parameters. In this work, we report the angle dependent magnetoresistance (MR) in graphene spin valve for different orientations of applied magnetic field (B). The switching points of spin valve signals show a clear shift towards higher B for each increasing angle of the applied field, thus sensing the response for respective orientation of the magnetic field. The angular variation of B shifts the switching points from ±95 G to ±925 G as the angle is varied from 0° to 90° at 300 K. The observed shifts in switching points become more pronounced (±165 G to ±1450 G) at 4.2 K for similar orientation. A monotonic increase in MR ratio is observed as the angle of magnetic field is varied in the vertical direction at 300 K and 4.2 K temperatures. This variation of B (from 0° to 90°) increases the magnitude of MR ratio from ∼0.08% to ∼0.14% at 300 K, while at 4.2 K it progresses to ∼0.39% from ∼0.14%. The sensitivity related to angular variation of such spin valve structure can be employed for angle sensing applications.

Interlayer quality dependent graphene spin valve

Energy Technology Data Exchange (ETDEWEB)

Iqbal, Muhammad Zahir, E-mail: zahir.upc@gmail.com [Faculty of Engineering Sciences, GIK Institute of Engineering Sciences and Technology, Topi, Khyber Pakhtunkhwa, 23640 Pakistan (Pakistan); Hussain, Ghulam [Faculty of Engineering Sciences, GIK Institute of Engineering Sciences and Technology, Topi, Khyber Pakhtunkhwa, 23640 Pakistan (Pakistan); Siddique, Salma [Department of Bioscience & Biotechnology, Sejong University, Seoul, 143-747 (Korea, Republic of); Iqbal, Muhammad Waqas [Department of Physics, Riphah Institute of Computing and Applied Sciences (RICAS), Riphah International University, Lahore (Pakistan); Murtaza, Ghulam [Centre for Advanced Studies in Physics, Government College University, Lahore 54000 (Pakistan); Ramay, Shahid Mahmood [Physics & Astronomy Department, College of Science, King Saud University, Riyadh 11451 (Saudi Arabia)

2017-01-15

It is possible to utilize the new class of materials for emerging two-dimensional (2D) spintronic applications. Here, the role of defects in the graphene interlayer and its influence on the spin valve signal is reported. The emergence of D peak in Raman spectrum reveals defects in the graphene layer. The linear I-V curve for defective and non-defective graphene samples indicate the ohmic nature of NiFe and graphene contact. A non-uniform magnetoresistive effect with a bump is persistently observed for defective graphene device at various temperatures, while a smooth and symmetric signal is detected for non-defective graphene spin valve. Parallel and antiparallel alignments of magnetization of magnetic materials shows low and high resistance states, respectively. The magnetoresistance (MR) ratio for defective graphene NiFe/graphene/NiFe spin valve is measured to be ~0.16% at 300 K which progresses to ~0.39% for non-defective graphene device at the same temperature. Similarly at 4.2 K the MR ratios are reported to be ~0.41% and ~0.78% for defective and non-defective graphene devices, respectively. Our investigation provides an evidence for relatively better response of the spin valve signal with high quality graphene interlayer.

Interlayer quality dependent graphene spin valve

International Nuclear Information System (INIS)

Iqbal, Muhammad Zahir; Hussain, Ghulam; Siddique, Salma; Iqbal, Muhammad Waqas; Murtaza, Ghulam; Ramay, Shahid Mahmood

2017-01-01

It is possible to utilize the new class of materials for emerging two-dimensional (2D) spintronic applications. Here, the role of defects in the graphene interlayer and its influence on the spin valve signal is reported. The emergence of D peak in Raman spectrum reveals defects in the graphene layer. The linear I-V curve for defective and non-defective graphene samples indicate the ohmic nature of NiFe and graphene contact. A non-uniform magnetoresistive effect with a bump is persistently observed for defective graphene device at various temperatures, while a smooth and symmetric signal is detected for non-defective graphene spin valve. Parallel and antiparallel alignments of magnetization of magnetic materials shows low and high resistance states, respectively. The magnetoresistance (MR) ratio for defective graphene NiFe/graphene/NiFe spin valve is measured to be ~0.16% at 300 K which progresses to ~0.39% for non-defective graphene device at the same temperature. Similarly at 4.2 K the MR ratios are reported to be ~0.41% and ~0.78% for defective and non-defective graphene devices, respectively. Our investigation provides an evidence for relatively better response of the spin valve signal with high quality graphene interlayer.

Effect of nano-oxide layers on giant magnetoresistance in pseudo-spin-valves using Co2FeAl electrodes

International Nuclear Information System (INIS)

Zhang, D.L.; Xu, X.G.; Wu, Y.; Miao, J.; Jiang, Y.

2011-01-01

We studied the pseudo-spin-valves (PSVs) with a structure of Ta/Co 2 FeAl/NOL 1 /Co 2 FeAl/Cu/Co 2 FeAl/NOL 2 /Ta, where NOL represents the nano-oxide layer. Compared with the normal Co 2 FeAl (CFA) PSV with a structure of Ta/Co 2 FeAl/Cu/Co 2 FeAl/Ta, which shows only a current-in-plane (CIP) giant magnetoresistance (GMR) of 0.03%, the CFA PSV with NOLs shows a large CIP-GMR of 5.84%. The enhanced GMR by the NOLs inserted in the CFA PSV is due to the large specular reflection caused by [(CoO)(Fe 2 O 3 )(Al 2 O 3 )] in NOL 1 and [(Fe 2 O 3 )(Al 2 O 3 )(Ta 2 O 5 )] in NOL 2 . Another reason is that the roughness of the interface between Ta and CFA is improved by the oxidation procedure. - Research highlights: → Nano-oxide layers are applied in the pseudo-spin-valves with the Heusler alloy. → The CIP-GMR of pseudo-spin-valves is improved from 0.03% to 5.84%. → The GMR ratio is decided by the position of nano-oxide layers.

Magnetic proximity control of spin currents and giant spin accumulation in graphene

Science.gov (United States)

Singh, Simranjeet

Two dimensional (2D) materials provide a unique platform to explore the full potential of magnetic proximity driven phenomena. We will present the experimental study showing the strong modulation of spin currents in graphene layers by controlling the direction of the exchange field due to the ferromagnetic-insulator (FMI) magnetization in graphene/FMI heterostructures. Owing to clean interfaces, a strong magnetic exchange coupling leads to the experimental observation of complete spin modulation at low externally applied magnetic fields in short graphene channels. We also discover that the graphene spin current can be fully dephased by randomly fluctuating exchange fields. This is manifested as an unusually strong temperature dependence of the non-local spin signals in graphene, which is due to spin relaxation by thermally-induced transverse fluctuations of the FMI magnetization. Additionally, it has been a challenge to grow a smooth, robust and pin-hole free tunnel barriers on graphene, which can withstand large current densities for efficient electrical spin injection. We have experimentally demonstrated giant spin accumulation in graphene lateral spin valves employing SrO tunnel barriers. Nonlocal spin signals, as large as 2 mV, are observed in graphene lateral spin valves at room temperature. This high spin accumulations observed using SrO tunnel barriers puts graphene on the roadmap for exploring the possibility of achieving a non-local magnetization switching due to the spin torque from electrically injected spins. Financial support from ONR (No. N00014-14-1-0350), NSF (No. DMR-1310661), and C-SPIN, one of the six SRC STARnet Centers, sponsored by MARCO and DARPA.

Magnetic scanning gate microscopy of CoFeB lateral spin valve

Directory of Open Access Journals (Sweden)

Héctor Corte-León

2017-05-01

Full Text Available Devices comprised of CoFeB nanostructures with perpendicular magnetic anisotropy and non-magnetic Ta channel were operated in thermal lateral spin valve (LSV mode and studied by magnetotransport measurements and magnetic scanning gate microscopy (SGM. Due to the short spin diffusion length of Ta, the spin diffusion signal was suppressed, allowing the study of the contribution from the anomalous Nernst (ANE and anomalous Hall effects (AHE. The magnetotransport measurements identified the switching fields of the CoFeB nanostructures and demonstrated a combination of AHE and ANE when the devices were operated in thermally-driven spin-injection mode. Modified scanning probe microscopy probes were fabricated by placing a NdFeB magnetic bead (MB on the apex of a commercial Si probe. The dipole magnetic field distribution around the MB was characterized by using differential phase contrast technique and direct measurement of the switching field induced by the bead in the CoFeB nanodevices. Using SGM we demonstrate the influence of localized magnetic field on the CoFeB nanostructures near the non-magnetic channel. This approach provides a promising route towards the study of thermal and spin diffusion effects using local magnetic fields.

Magnetic scanning gate microscopy of CoFeB lateral spin valve

Science.gov (United States)

Corte-León, Héctor; Scarioni, Alexander Fernandez; Mansell, Rhodri; Krzysteczko, Patryk; Cox, David; McGrouther, Damien; McVitie, Stephen; Cowburn, Russell; Schumacher, Hans W.; Antonov, Vladimir; Kazakova, Olga

2017-05-01

Devices comprised of CoFeB nanostructures with perpendicular magnetic anisotropy and non-magnetic Ta channel were operated in thermal lateral spin valve (LSV) mode and studied by magnetotransport measurements and magnetic scanning gate microscopy (SGM). Due to the short spin diffusion length of Ta, the spin diffusion signal was suppressed, allowing the study of the contribution from the anomalous Nernst (ANE) and anomalous Hall effects (AHE). The magnetotransport measurements identified the switching fields of the CoFeB nanostructures and demonstrated a combination of AHE and ANE when the devices were operated in thermally-driven spin-injection mode. Modified scanning probe microscopy probes were fabricated by placing a NdFeB magnetic bead (MB) on the apex of a commercial Si probe. The dipole magnetic field distribution around the MB was characterized by using differential phase contrast technique and direct measurement of the switching field induced by the bead in the CoFeB nanodevices. Using SGM we demonstrate the influence of localized magnetic field on the CoFeB nanostructures near the non-magnetic channel. This approach provides a promising route towards the study of thermal and spin diffusion effects using local magnetic fields.

Spin Transfer Torque in Graphene

Science.gov (United States)

Lin, Chia-Ching; Chen, Zhihong

2014-03-01

Graphene is an idea channel material for spin transport due to its long spin diffusion length. To develop graphene based spin logic, it is important to demonstrate spin transfer torque in graphene. Here, we report the experimental measurement of spin transfer torque in graphene nonlocal spin valve devices. Assisted by a small external in-plane magnetic field, the magnetization reversal of the receiving magnet is induced by pure spin diffusion currents from the injector magnet. The magnetization switching is reversible between parallel and antiparallel configurations by controlling the polarity of the applied charged currents. Current induced heating and Oersted field from the nonlocal charge flow have also been excluded in this study. Next, we further enhance the spin angular momentum absorption at the interface of the receiving magnet and graphene channel by removing the tunneling barrier in the receiving magnet. The device with a tunneling barrier only at the injector magnet shows a comparable nonlocal spin valve signal but lower electrical noise. Moreover, in the same preset condition, the critical charge current density for spin torque in the single tunneling barrier device shows a substantial reduction if compared to the double tunneling barrier device.

Enhanced emission of high-energy photons perpendicular to the reaction plane in α+Th reactions

International Nuclear Information System (INIS)

Tegner, P.; Marianski, B.; Morsch, H.P.; Rogge, M.; Bargholtz, C.; Decowski, P.; Zemlo, L.

1991-01-01

High-energy photon and neutron emission has been measured in coincidence with fission fragments in α+ 232 Th reactions at 170 MeV. From measurements parallel and perpendicular to the fission plane, anisotropies relative to the reaction plane were determined. The in-plane/out-of-plane intensity ratio is 0.72(7) for photons with energies above 20 MeV and 11(3) for neutrons at 35 MeV. The result for high-energy photons can be explained by nucleon-nucleon bremsstrahlung if the initial flow of nucleons has a correlation to the reaction plane similar to the one observed for fast neutrons

Highly Efficient Spin-Current Operation in a Cu Nano-Ring

Science.gov (United States)

Murphy, Benedict A.; Vick, Andrew J.; Samiepour, Marjan; Hirohata, Atsufumi

2016-11-01

An all-metal lateral spin-valve structure has been fabricated with a medial Copper nano-ring to split the diffusive spin-current path. We have demonstrated significant modulation of the non-local signal by the application of a magnetic field gradient across the nano-ring, which is up to 30% more efficient than the conventional Hanle configuration at room temperature. This was achieved by passing a dc current through a current-carrying bar to provide a locally induced Ampère field. We have shown that in this manner a lateral spin-valve gains an additional functionality in the form of three-terminal gate operation for future spintronic logic.

Spin-Orbit Torque-Assisted Switching in Magnetic Insulator Thin Films with Perpendicular Magnetic Anisotropy

Science.gov (United States)

Wu, Mingzhong

As an in-plane charge current flows in a heavy metal film with spin-orbit coupling, it produces a torque that can induce magnetization switching in a neighboring ferromagnetic metal film. Such spin-orbit torque (SOT)-induced switching has been studied extensively in recent years and has shown higher efficiency than switching using conventional spin-transfer torque. This presentation reports the SOT-assisted switching in heavy metal/magnetic insulator systems.1 The experiments made use of Pt/BaFe12O19 bi-layered structures. Thanks to its strong spin-orbit coupling, Pt has been widely used to produce pure spin currents in previous studies. BaFe12O19 is an M-type barium hexagonal ferrite and is often referred as BaM. It is one of the few magnetic insulators with strong magneto-crystalline anisotropy and shows an effective uniaxial anisotropy field of about 17 kOe. It's found that the switching response in the BaM film strongly depends on the charge current applied to the Pt film. When a constant magnetic field is applied in the film plane, the charge current in the Pt film can switch the normal component of the magnetization (M⊥) in the BaM film between the up and down states. The current also dictates the up and down states of the remnant magnetization when the in-plane field is reduced to zero. When M⊥ is measured by sweeping an in-plane field, the response manifests itself as a hysteresis loop, which evolves in a completely opposite manner if the sign of the charge current is flipped. When the coercivity is measured by sweeping an out-of-plane field, its value can be reduced or increased by as much as about 500 Oe if an appropriate charge current is applied. 1. P. Li, T. Liu, H. Chang, A. Kalitsov, W. Zhang, G. Csaba, W. Li, D. Richardson, A. Demann, G. Rimal, H. Dey, J. S. Jiang, W. Porod, S. Field, J. Tang, M. C. Marconi, A. Hoffmann, O. Mryasov, and M. Wu, Nature Commun. 7:12688 doi: 10.1038/ncomms12688 (2016).

Current-induced spin polarization in a spin-polarized two-dimensional electron gas with spin-orbit coupling

International Nuclear Information System (INIS)

Wang, C.M.; Pang, M.Q.; Liu, S.Y.; Lei, X.L.

2010-01-01

The current-induced spin polarization (CISP) is investigated in a combined Rashba-Dresselhaus spin-orbit-coupled two-dimensional electron gas, subjected to a homogeneous out-of-plane magnetization. It is found that, in addition to the usual collision-related in-plane parts of CISP, there are two impurity-density-free contributions, arising from intrinsic and disorder-mediated mechanisms. The intrinsic parts of spin polarization are related to the Berry curvature, analogous with the anomalous and spin Hall effects. For short-range collision, the disorder-mediated spin polarizations completely cancel the intrinsic ones and the total in-plane components of CISP equal those for systems without magnetization. However, for remote disorders, this cancellation does not occur and the total in-plane components of CISP strongly depend on the spin-orbit interaction coefficients and magnetization for both pure Rashba and combined Rashba-Dresselhaus models.

Interplay of Rashba effect and spin Hall effect in perpendicular Pt/Co/MgO magnetic multilayers

Institute of Scientific and Technical Information of China (English)

赵云驰; 杨光; 董博闻; 王守国; 王超; 孙阳; 张静言; 于广华

2016-01-01

The interplay of the Rashba effect and the spin Hall effect originating from current induced spin–orbit coupling was investigated in the as-deposited and annealed Pt/Co/MgO stacks with perpendicular magnetic anisotropy. The above two effects were analyzed based on Hall measurements under external magnetic fields longitudinal and vertical to dc current, respectively. The coercive field as a function of dc current in vertical mode with only the Rashba effect involved decreases due to thermal annealing. Meanwhile, spin orbit torques calculated from Hall resistance with only the spin Hall effect involved in the longitudinal mode decrease in the annealed sample. The experimental results prove that the bottom Pt/Co interface rather than the Co/MgO top one plays a more critical role in both Rashba effect and spin Hall effect.

Out-of-plane spin-orientation dependent magnetotransport properties in the anisotropic helimagnet CR1/3NbS2 [Spin-Orbit Coupling Induced Anisotropy in the Magnetotransport of the Chiral Helimagnet Cr1=3NbS2

International Nuclear Information System (INIS)

Bornstein, Alexander C.; Chapman, Benjamin J.; Ghimire, Nirmal J.; Oak Ridge National Lab.; Technology Div.); Mandrus, David G.; Oak Ridge National Lab.; Technology Div.); Parker, David S.; Technology Div.); Lee, Minhyea

2015-01-01

Understanding the role of spin-orbit coupling (SOC) has been crucial for controlling magnetic anisotropy in magnetic multilayer films. It has been shown that electronic structure can be altered via interface SOC by varying the superlattice structure, resulting in spontaneous magnetization perpendicular or parallel to the plane. In lieu of magnetic thin films, we study the similarly anisotropic helimagnet Cr1/3NbS2 where the spin-polarization direction, controlled by the applied magnetic field, can modify the electronic structure. As a result, the direction of spin polarization can modulate the density of states and in turn affect the in-plane electrical conductivity. In Cr1/3NbS2, we found an enhancement of in-plane conductivity when the spin polarization is out-of-plane as compared to in-plane spin polarization. This is consistent with the increase in density of states near the Fermi energy at the same spin configuration, found from first-principles calculations. We also observe unusual field dependence of the Hall signal in the same temperature range. This is unlikely to originate from the noncollinear spin texture but rather further indicates strong dependence of electronic structure on spin orientation relative to the plane

Isotropic transmission of magnon spin information without a magnetic field.

Science.gov (United States)

Haldar, Arabinda; Tian, Chang; Adeyeye, Adekunle Olusola

2017-07-01

Spin-wave devices (SWD), which use collective excitations of electronic spins as a carrier of information, are rapidly emerging as potential candidates for post-semiconductor non-charge-based technology. Isotropic in-plane propagating coherent spin waves (magnons), which require magnetization to be out of plane, is desirable in an SWD. However, because of lack of availability of low-damping perpendicular magnetic material, a usually well-known in-plane ferrimagnet yttrium iron garnet (YIG) is used with a large out-of-plane bias magnetic field, which tends to hinder the benefits of isotropic spin waves. We experimentally demonstrate an SWD that eliminates the requirement of external magnetic field to obtain perpendicular magnetization in an otherwise in-plane ferromagnet, Ni 80 Fe 20 or permalloy (Py), a typical choice for spin-wave microconduits. Perpendicular anisotropy in Py, as established by magnetic hysteresis measurements, was induced by the exchange-coupled Co/Pd multilayer. Isotropic propagation of magnon spin information has been experimentally shown in microconduits with three channels patterned at arbitrary angles.

State diagram of spin-torque oscillator with perpendicular reference layer and planar field generation layer

Directory of Open Access Journals (Sweden)

Mengwei Zhang

2015-06-01

Full Text Available The state diagram of spin-torque oscillator (STO with perpendicular reference layer (REF and planar field generation layer (FGL was studied by a macrospin model and a micro-magnetic model. The state diagrams are calculated versus the current density, external field and external field angle. It was found that the oscillation in FGL could be controlled by current density combined with external field so as to achieve a wide frequency range. An optimized current and applied field region was given for microwave assisted magnetic recording (MAMR, considering both frequency and output field oscillation amplitude. The results of the macro-spin model were compared with those of the micro-magnetic model. The macro-spin model was qualitatively different from micro-magnetics and experimental results when the current density was large and the FGL was non-uniform.

Local spin valve effect in lateral (Ga,MnAs/GaAs spin Esaki diode devices

Directory of Open Access Journals (Sweden)

M. Ciorga

2011-06-01

Full Text Available We report here on a local spin valve effect observed unambiguously in lateral all-semiconductor all-electrical spin injection devices, employing p+ −(Ga,MnAs/n+ −GaAs Esaki diode structures as spin aligning contacts. We discuss the observed local spin-valve signal as a result of the interplay between spin-transport-related contribution and the tunneling anisotropic magnetoresistance of the magnetic contacts. The magnitude of the spin-related magnetoresistance change is equal to 30 Ω which is twice the magnitude of the measured non-local signal.

Spin wave propagation in perpendicular magnetized 20 nm Yttrium Iron Garnet with different antenna design

Science.gov (United States)

Chen, Jilei; Stueckler, Tobias; Zhang, Youguang; Zhao, Weisheng; Yu, Haiming; Chang, Houchen; Liu, Tao; Wu, Mingzhong; Liu, Chuanpu; Liao, Zhimin; Yu, Dapeng; Fert Beijing research institute Team; Colorado State University Team; Peking University Collaboration

Magnonics offers a new way to transport information using spin waves free of charge current and could lead to a new paradigm in the area of computing. Forward volume (FV) mode spin wave with perpendicular magnetized configuration is suitable for spin wave logic device because it is free of non-reciprocity effect. Here, we study FV mode spin wave propagation in YIG thin film with an ultra-low damping. We integrated differently designed antenna i.e., coplanar waveguide and micro stripline with different dimensions. The k vectors of the spin waves defined by the design of the antenna are calculated using Fourier transform. We show FV mode spin wave propagation results by measuring S12 parameter from vector network analyzer and we extract the group velocity of the FV mode spin wave as well as its dispersion relations.

Spin Valve Systems for Angle Sensor Applications

OpenAIRE

Johnson, Andrew

2004-01-01

A contact-less sensor with the ability to measure over a 360° range has been long sought after in the automotive industry. Such a sensor could be realized by utilizing the angle dependence of the Giant Magneto Resistance (GMR) Effect in a special type of magnetic multilayer called a spin valve arranged in a wheatstone bridge circuit [Spo96]. A spin valve consists of two ferromagnetic layers separated by nonmagnetic spacer layer where the magnetization of one of the ferromagnetic layers is pin...

Spin valve sensor for biomolecular identification: Design, fabrication, and characterization

Science.gov (United States)

Li, Guanxiong

Biomolecular identification, e.g., DNA recognition, has broad applications in biology and medicine such as gene expression analysis, disease diagnosis, and DNA fingerprinting. Therefore, we have been developing a magnetic biodetection technology based on giant magnetoresistive spin valve sensors and magnetic nanoparticle (developed for the magnetic nanoparticle detection, assuming the equivalent average field of magnetic nanoparticles and the coherent rotation of spin valve free layer magnetization. Micromagnetic simulations have also been performed for the spin valve sensors. The analytical model and micromagnetic simulations are found consistent with each other and are in good agreement with experiments. The prototype spin valve sensors have been fabricated at both micron and submicron scales. We demonstrated the detection of a single 2.8-mum magnetic microbead by micron-sized spin valve sensors. Based on polymer-mediated self-assembly and fine lithography, a bilayer lift-off process was developed to deposit magnetic nanoparticles onto the sensor surface in a controlled manner. With the lift-off deposition method, we have successfully demonstrated the room temperature detection of monodisperse 16-nm Fe3O 4 nanoparticles in a quantity from a few tens to several hundreds by submicron spin valve sensors, proving the feasibility of the nanoparticle detection. As desired for quantitative biodetection, a fairly linear dependence of sensor signal on the number of nanoparticles has been confirmed. The initial detection of DNA hybridization events labeled by magnetic nanoparticles further proved the magnetic biodetection concept.

Weak-field precession of nano-pillar spin-torque oscillators using MgO-based perpendicular magnetic tunnel junction

Science.gov (United States)

Zhang, Changxin; Fang, Bin; Wang, Bochong; Zeng, Zhongming

2018-04-01

This paper presents a steady auto-oscillation in a spin-torque oscillator using MgO-based magnetic tunnel junction (MTJ) with a perpendicular polarizer and a perpendicular free layer. As the injected d.c. current varied from 1.5 to 3.0 mA under a weak magnetic field of 290 Oe, the oscillation frequency decreased from 1.85 to 1.3 GHz, and the integrated power increased from 0.1 to 74 pW. A narrow linewidth down to 7 MHz corresponding to a high Q factor of 220 was achieved at 2.7 mA, which was ascribed to the spatial coherent procession of the free layer magnetization. Moreover, the oscillation frequency was quite sensitive to the applied field, about 3.07 MHz/Oe, indicating the potential applications as a weak magnetic field detector. These results suggested that the MgO-based MTJ with perpendicular magnetic easy axis could be helpful for developing spin-torque oscillators with narrow-linewidth and high sensitive.

Shot noise of spin current and spin transfer torque

Science.gov (United States)

Yu, Yunjin; Zhan, Hongxin; Wan, Langhui; Wang, Bin; Wei, Yadong; Sun, Qingfeng; Wang, Jian

2013-04-01

We report the theoretical investigation of the shot noise of the spin current (Sσ) and the spin transfer torque (Sτ) for non-collinear spin polarized transport in a spin-valve device which consists of a normal scattering region connected by two ferromagnetic electrodes (MNM system). Our theory was developed using the non-equilibrium Green’s function method, and general nonlinear Sσ - V and Sτ - V relations were derived as a function of the angle θ between the magnetizations of two leads. We have applied our theory to a quantum dot system with a resonant level coupled with two ferromagnetic electrodes. It was found that, for the MNM system, the auto-correlation of the spin current is enough to characterize the fluctuation of the spin current. For a system with three ferromagnetic layers, however, both auto-correlation and cross-correlation of the spin current are needed to characterize the noise of the spin current. For a quantum dot with a resonant level, the derivative of spin torque with respect to bias voltage is proportional to sinθ when the system is far away from resonance. When the system is near resonance, the spin transfer torque becomes a non-sinusoidal function of θ. The derivative of the noise of the spin transfer torque with respect to the bias voltage Nτ behaves differently when the system is near or far away from resonance. Specifically, the differential shot noise of the spin transfer torque Nτ is a concave function of θ near resonance while it becomes a convex function of θ far away from resonance. For certain bias voltages, the period Nτ(θ) becomes π instead of 2π. For small θ, it was found that the differential shot noise of the spin transfer torque is very sensitive to the bias voltage and the other system parameters.

Spin Relaxation and Manipulation in Spin-orbit Qubits

Science.gov (United States)

Borhani, Massoud; Hu, Xuedong

2012-02-01

We derive a generalized form of the Electric Dipole Spin Resonance (EDSR) Hamiltonian in the presence of the spin-orbit interaction for single spins in an elliptic quantum dot (QD) subject to an arbitrary (in both direction and magnitude) applied magnetic field. We predict a nonlinear behavior of the Rabi frequency as a function of the magnetic field for sufficiently large Zeeman energies, and present a microscopic expression for the anisotropic electron g-tensor. Similarly, an EDSR Hamiltonian is devised for two spins confined in a double quantum dot (DQD). Finally, we calculate two-electron-spin relaxation rates due to phonon emission, for both in-plane and perpendicular magnetic fields. Our results have immediate applications to current EDSR experiments on nanowire QDs, g-factor optimization of confined carriers, and spin decay measurements in DQD spin-orbit qubits.

Exchange bias energy in Co/Pt/IrMn multilayers with perpendicular and in-plane anisotropy

Energy Technology Data Exchange (ETDEWEB)

Czapkiewicz, M. [Department of Electronics, AGH University of Science and Technology, 30-059 Cracow (Poland)]. E-mail: czapkiew@agh.edu.pl; Stobiecki, T. [Department of Electronics, AGH University of Science and Technology, 30-059 Cracow (Poland); Rak, R. [Department of Electronics, AGH University of Science and Technology, 30-059 Cracow (Poland); Zoladz, M. [Department of Electronics, AGH University of Science and Technology, 30-059 Cracow (Poland); Dijken, S. van [CRANN and School of Physics, Trinity College, Dublin 2 (Ireland)

2007-09-15

The magnetization reversal process in perpendicularly biased [Pt/Co]{sub 3}/d{sub Pt} Pt/IrMn and in-plane biased Co/d{sub Pt} Pt/IrMn multilayers with 0nm=plane magnetic anisotropy, the exchange bias field decreases monotonically with Pt insertion layer thickness, while its coercivity remains constant. The samples with perpendicular magnetic anisotropy, on the other hand, exhibit maximum exchange bias and minimum coercivity for d{sub Pt}=0.1nm. In both cases, the existence of large exchange bias fields correlates with a high domain density during magnetization reversal. The interface exchange coupling energy is larger for the in-plane biased films than for the perpendicularly biased multilayers.

Fully differential cross sections for low to intermediate energy perpendicular plane ionization of xenon atoms

Energy Technology Data Exchange (ETDEWEB)

Purohit, G., E-mail: ghanshyam.purohit@spsu.ac.in; Singh, P.; Patidar, V.

2014-12-15

Highlights: • We present triply differential cross section (TDCS) results for the perpendicular plane ionization of xenon atoms. • The TDCS has been calculated in the modified distorted wave Born approximation formalism. • The effects of target polarization and post collision interaction have also been included. • The polarization potential, higher order effects and PCI has been found to be useful in the description of TDCS. - Abstract: Triple differential cross section (TDCS) results are reported for the perpendicular plane ionization of Xe (5p) at incident electron energies 5 eV, 10 eV, 20 eV, and 40 eV above ionization potential. The modified distorted wave Born approximation formalism with first as well as the second order Born terms has been used to calculate the TDCS. Effects of target polarization and post collision interaction have also been included. We compare the (e, 2e) TDCS results of our calculation with the recent available experimental data and theoretical results and discuss the process contributing to structure seen in the differential cross section. It has been observed from the present study that the second order effect and target polarization make significant contribution in description of collision dynamics of xenon at the low and intermediate energy for the perpendicular emission of electrons.

Fully differential cross sections for low to intermediate energy perpendicular plane ionization of xenon atoms

International Nuclear Information System (INIS)

Purohit, G.; Singh, P.; Patidar, V.

2014-01-01

Highlights: • We present triply differential cross section (TDCS) results for the perpendicular plane ionization of xenon atoms. • The TDCS has been calculated in the modified distorted wave Born approximation formalism. • The effects of target polarization and post collision interaction have also been included. • The polarization potential, higher order effects and PCI has been found to be useful in the description of TDCS. - Abstract: Triple differential cross section (TDCS) results are reported for the perpendicular plane ionization of Xe (5p) at incident electron energies 5 eV, 10 eV, 20 eV, and 40 eV above ionization potential. The modified distorted wave Born approximation formalism with first as well as the second order Born terms has been used to calculate the TDCS. Effects of target polarization and post collision interaction have also been included. We compare the (e, 2e) TDCS results of our calculation with the recent available experimental data and theoretical results and discuss the process contributing to structure seen in the differential cross section. It has been observed from the present study that the second order effect and target polarization make significant contribution in description of collision dynamics of xenon at the low and intermediate energy for the perpendicular emission of electrons

Detecting Spin-Polarized Currents in Ballistic Nanostructures

DEFF Research Database (Denmark)

Potok, R.; Folk, J.; M. Marcus, C.

2002-01-01

We demonstrate a mesoscopic spin polarizer/analyzer system that allows the spin polarization of current from a quantum point contact in an in-plane magnetic field to be measured. A transverse focusing geometry is used to couple current from an emitter point contact into a collector point contact....

MnNi-based spin valve sensors combining high thermal stability, small footprint and pTesla detectivities

Science.gov (United States)

Silva, Marília; Leitao, Diana C.; Cardoso, Susana; Freitas, Paulo

2018-05-01

Magnetoresistive sensors with high thermal robustness, low noise and high spatial resolution are the answer to a number of challenging applications. Spin valve sensors including MnNi as antiferromagnet layer provide higher exchange bias field and improved thermal stability. In this work, the influence of the buffer layer type (Ta, NiFeCr) and thickness on key sensor parameters (e.g. offset field, Hf) is investigated. A Ta buffer layer promotes a strong (111) texture which leads to a higher value of MR. In contrast, Hf is lower for NiFeCr buffer. Micrometric sensors display thermal noise levels of 1 nT/Hz1/2 and 571 pT/Hz1/2 for a sensor height (h) of 2 and 4 μm, respectively. The temperature dependence of MR and sensitivity is also addressed and compared with MnIr based spin valves. In this case, MR abruptly decreases after heating at 160°C (without magnetic field), contrary to MnNi-based spin valves, where only a 10% MR decrease (relative to the initial value) is seen at 275°C. Finally, to further decrease the noise levels and improve detectivity, MnNi spin-valves are deposited vertically, and connected in parallel and series (in-plane) to create a device with low resistance and high sensitivity. A field detection at thermal level of 346 pT/Hz1/2 is achieved for a device with a total of 300 SVs (4 vertical, 15 in series, 5 in parallel).

Tilted spin torque-driven ferromagnetic resonance in a perpendicular-analyzer magnetic trilayer

International Nuclear Information System (INIS)

Wang Rixing; He Pengbin; Liu Quanhui; Li Zaidong; Pan Anlian; Zou Bingsuo; Wang Yanguo

2010-01-01

A theoretical study is presented on the current-driven ferromagnetic resonance in the magnetic trilayers. On the basis of the Landau-Lifshitz-Gilbert-Slonczewski equation, we derive the output dc voltage for arbitrary anisotropy in the free and pinned layers by the linearization method. As an example, the resonance spectra of the tilted-polarizer and perpendicular-analyzer trilayer show that the equilibrium position, the resonant linewidth and the resonant location can be tuned by changing the magnitude and the direction of spin torque. The effective damping can be minimized through adjusting the current and the pinned-layer magnetization direction.

Exchange bias energy in Co/Pt/IrMn multilayers with perpendicular and in-plane anisotropy

International Nuclear Information System (INIS)

Czapkiewicz, M.; Stobiecki, T.; Rak, R.; Zoladz, M.; Dijken, S. van

2007-01-01

The magnetization reversal process in perpendicularly biased [Pt/Co] 3 /d Pt Pt/IrMn and in-plane biased Co/d Pt Pt/IrMn multilayers with 0nm= Pt = Pt =0.1nm. In both cases, the existence of large exchange bias fields correlates with a high domain density during magnetization reversal. The interface exchange coupling energy is larger for the in-plane biased films than for the perpendicularly biased multilayers

Thermal stability of low dose Ga+ ion irradiated spin valves

International Nuclear Information System (INIS)

Qi Xianjin; Wang Yingang; Zhou Guanghong; Li Ziquan

2009-01-01

The thermal stability of low dose Ga + ion irradiated spin valves has been investigated and compared with that of the as-prepared ones. The dependences of exchange field, measured using vibrating sample magnetometer at room temperature, on magnetic field sweep rate and time spent at negative saturation of the pinned ferromagnetic layer, and training effect were explored. The training effect is observed on both the irradiated spin valves and the as-prepared ones. The magnetic field sweep rate dependence of the exchange bias field of the irradiated spin valves is nearly the same as that of the as-prepared ones. For the as-prepared structure thermal activation has been observed, which showed that holding the irradiated structure at negative saturation of the pinned ferromagnetic layer for up to 28 hours results in no change in the exchange field. The results indicate that the thermal stability of the ion irradiated spin valves is the same as or even better than the as-prepared ones.

Modulation of pure spin currents with a ferromagnetic insulator

Science.gov (United States)

Villamor, Estitxu; Isasa, Miren; Vélez, Saül; Bedoya-Pinto, Amilcar; Vavassori, Paolo; Hueso, Luis E.; Bergeret, F. Sebastián; Casanova, Fèlix

2015-01-01

We propose and demonstrate spin manipulation by magnetically controlled modulation of pure spin currents in cobalt/copper lateral spin valves, fabricated on top of the magnetic insulator Y3F e5O12 (YIG). The direction of the YIG magnetization can be controlled by a small magnetic field. We observe a clear modulation of the nonlocal resistance as a function of the orientation of the YIG magnetization with respect to the polarization of the spin current. Such a modulation can only be explained by assuming a finite spin-mixing conductance at the Cu/YIG interface, as it follows from the solution of the spin-diffusion equation. These results open a path towards the development of spin logics.

Giant magneto-spin-Seebeck effect and magnon transfer torques in insulating spin valves

Science.gov (United States)

Cheng, Yihong; Chen, Kai; Zhang, Shufeng

2018-01-01

We theoretically study magnon transport in an insulating spin valve (ISV) made of an antiferromagnetic insulator sandwiched between two ferromagnetic insulator (FI) layers. In the conventional metal-based spin valve, the electron spins propagate between two metallic ferromagnetic layers, giving rise to giant magnetoresistance and spin transfer torque. Here, the incoherent magnons in the ISV serve as angular momentum carriers and are responsible for the angular momentum transport between two FI layers across the antiferromagnetic spacer. We predict two transport phenomena in the presence of the temperature gradient: a giant magneto-spin-Seebeck effect in which the output voltage signal is controlled by the relative orientation of the two FI layers and magnon transfer torque that can be used for switching the magnetization of the FI layers with a temperature gradient of the order of 0.1 Kelvin per nanometer.

Spin-orbit torques from interfacial spin-orbit coupling for various interfaces

Science.gov (United States)

Kim, Kyoung-Whan; Lee, Kyung-Jin; Sinova, Jairo; Lee, Hyun-Woo; Stiles, M. D.

2017-09-01

We use a perturbative approach to study the effects of interfacial spin-orbit coupling in magnetic multilayers by treating the two-dimensional Rashba model in a fully three-dimensional description of electron transport near an interface. This formalism provides a compact analytic expression for current-induced spin-orbit torques in terms of unperturbed scattering coefficients, allowing computation of spin-orbit torques for various contexts, by simply substituting scattering coefficients into the formulas. It applies to calculations of spin-orbit torques for magnetic bilayers with bulk magnetism, those with interface magnetism, a normal-metal/ferromagnetic insulator junction, and a topological insulator/ferromagnet junction. It predicts a dampinglike component of spin-orbit torque that is distinct from any intrinsic contribution or those that arise from particular spin relaxation mechanisms. We discuss the effects of proximity-induced magnetism and insertion of an additional layer and provide formulas for in-plane current, which is induced by a perpendicular bias, anisotropic magnetoresistance, and spin memory loss in the same formalism.

Few-nanosecond pulse switching with low write error for in-plane nanomagnets using the spin-Hall effect

Science.gov (United States)

Aradhya, Sriharsha; Rowlands, Graham; Shi, Shengjie; Oh, Junseok; Ralph, D. C.; Buhrman, Robert

Magnetic random access memory (MRAM) using spin transfer torques (STT) holds great promise for replacing existing best-in-class memory technologies in several application domains. Research on conventional two-terminal STT-MRAM thus far has revealed the existence of limitations that constrain switching reliability and speed for both in-plane and perpendicularly magnetized devices. Recently, spin torque arising from the giant spin-Hall effect in Ta, W and Pt has been shown to be an efficient mechanism to switch magnetic bits in a three-terminal geometry. Here we report highly reliable, nanosecond timescale pulse switching of three-terminal devices with in-plane magnetized magnetic tunnel junctions. We obtain write error rates (WER) down to ~10-5 using pulses as short as 2 ns, in contrast to conventional in-plane STT-MRAM devices where write speeds were limited to a few tens of nanoseconds for comparable WER. Utilizing micro-magnetic simulations, we discuss the differences from conventional MRAM that allow for this unanticipated and significant performance improvement. Finally, we highlight the path towards practical application enabled by the ability to separately optimize the read and write pathways in three-terminal devices.

Shot noise of spin current and spin transfer torque

International Nuclear Information System (INIS)

Yu Yunjin; Zhan Hongxin; Wan Langhui; Wang Bin; Wei Yadong; Sun Qingfeng; Wang Jian

2013-01-01

We report the theoretical investigation of the shot noise of the spin current (S σ ) and the spin transfer torque (S τ ) for non-collinear spin polarized transport in a spin-valve device which consists of a normal scattering region connected by two ferromagnetic electrodes (MNM system). Our theory was developed using the non-equilibrium Green’s function method, and general nonlinear S σ − V and S τ − V relations were derived as a function of the angle θ between the magnetizations of two leads. We have applied our theory to a quantum dot system with a resonant level coupled with two ferromagnetic electrodes. It was found that, for the MNM system, the auto-correlation of the spin current is enough to characterize the fluctuation of the spin current. For a system with three ferromagnetic layers, however, both auto-correlation and cross-correlation of the spin current are needed to characterize the noise of the spin current. For a quantum dot with a resonant level, the derivative of spin torque with respect to bias voltage is proportional to sinθ when the system is far away from resonance. When the system is near resonance, the spin transfer torque becomes a non-sinusoidal function of θ. The derivative of the noise of the spin transfer torque with respect to the bias voltage N τ behaves differently when the system is near or far away from resonance. Specifically, the differential shot noise of the spin transfer torque N τ is a concave function of θ near resonance while it becomes a convex function of θ far away from resonance. For certain bias voltages, the period N τ (θ) becomes π instead of 2π. For small θ, it was found that the differential shot noise of the spin transfer torque is very sensitive to the bias voltage and the other system parameters. (paper)

FY1995 study of high density near-contact magnetic recording using spin valve head; 1995 nendo spin valve head ni yoru chokomitsudo near contact jiki kiroku no kenkyu

Energy Technology Data Exchange (ETDEWEB)

NONE

1997-03-01

Development of high performance spin valves formed by amorphous magnetic layer and head-medium interface with nano-thickness molecular film for realizing an ultra-high density of 20 Gbit/in{sup 2} using contact recording. The giant magnetoresistance effect was investigated for spin valves using very thin amorphous magnetic layer. In amorphous-CoFeB/Cu/ Co spin valves, the maximum MR ratio of 6% was achieved at the thickness of the amorphous layer of 2 nm. The spin valves with the amorphous layer exhibit very good thermal stability. Design guideline for molecularly thin lubricant was established using newly derived lubrication equation considering lubricant porosity. Novel method for accurately measuring surface force due to molecularly thin lubricant was developed by using Michelson interferometry to detect cantilever displacement, which enabled two-dimensional transient force measurement. (NEDO)

Robust spin transfer torque in antiferromagnetic tunnel junctions

KAUST Repository

Saidaoui, Hamed Ben Mohamed

2017-04-18

We theoretically study the current-induced spin torque in antiferromagnetic tunnel junctions, composed of two semi-infinite antiferromagnetic layers separated by a tunnel barrier, in both clean and disordered regimes. We find that the torque enabling electrical manipulation of the Néel antiferromagnetic order parameter is out of plane, ∼n×p, while the torque competing with the antiferromagnetic exchange is in plane, ∼n×(p×n). Here, p and n are the Néel order parameter direction of the reference and free layers, respectively. Their bias dependence shows behavior similar to that in ferromagnetic tunnel junctions, the in-plane torque being mostly linear in bias, while the out-of-plane torque is quadratic. Most importantly, we find that the spin transfer torque in antiferromagnetic tunnel junctions is much more robust against disorder than that in antiferromagnetic metallic spin valves due to the tunneling nature of spin transport.

Spin injection and detection in lateral spin valves with hybrid interfaces

Science.gov (United States)

Wang, Le; Liu, Wenyu; Ying, Hao; Chen, Luchen; Lu, Zhanjie; Han, Shuo; Chen, Shanshan; Zhao, Bing; Xu, Xiaoguang; Jiang, Yong

2018-06-01

Spin injection and detection in lateral spin valves with hybrid interfaces comprising a Co/Ag transparent contact and a Co/MgO/Ag junction (III) are investigated at room temperature in comparison with pure Co/Ag transparent contacts (I) and Co/MgO/Ag junctions (II). The measured spin-accumulation signals of a type III device are five times higher than those for type I. The extracted spin diffusion length in Ag is 180 nm for all three types of devices. The enhancement of the spin signal of the hybrid structure is mainly attributed to the increase of the interfacial spin polarization from the Co/MgO/Ag junction.

Tunneling Planar Hall Effect in Topological Insulators: Spin Valves and Amplifiers.

Science.gov (United States)

Scharf, Benedikt; Matos-Abiague, Alex; Han, Jong E; Hankiewicz, Ewelina M; Žutić, Igor

2016-10-14

We investigate tunneling across a single ferromagnetic barrier on the surface of a three-dimensional topological insulator. In the presence of a magnetization component along the bias direction, a tunneling planar Hall conductance (TPHC), transverse to the applied bias, develops. Electrostatic control of the barrier enables a giant Hall angle, with the TPHC exceeding the longitudinal tunneling conductance. By changing the in-plane magnetization direction, it is possible to change the sign of both the longitudinal and transverse differential conductance without opening a gap in the topological surface state. The transport in a topological-insulator-ferromagnet junction can, thus, be drastically altered from a simple spin valve to an amplifier.

Bulk magnon spin current theory for the longitudinal spin Seebeck effect

Energy Technology Data Exchange (ETDEWEB)

Rezende, S.M., E-mail: rezende@df.ufpe.br [Departamento de Física, Universidade Federal de Pernambuco, 50670-901 Recife, Pernambuco (Brazil); Rodríguez-Suárez, R.L. [Departamento de Física, Universidade Federal de Pernambuco, 50670-901 Recife, Pernambuco (Brazil); Facultad de Física, Pontificia Universidad Católica de Chile, Casilla, 306 Santiago (Chile); Cunha, R.O.; López Ortiz, J.C.; Azevedo, A. [Departamento de Física, Universidade Federal de Pernambuco, 50670-901 Recife, Pernambuco (Brazil)

2016-02-15

The longitudinal spin Seebeck effect (LSSE) consists in the generation of a spin current parallel to a temperature gradient applied across the thickness of a bilayer made of a ferromagnetic insulator (FMI), such as yttrium iron garnet (YIG), and a metallic layer (ML) with strong spin orbit coupling, such as platinum. The LSSE is usually detected by a DC voltage generated along the ML due to the conversion of the spin current into a charge current perpendicular to the static magnetic field by means of the inverse spin Hall effect. Here we present a model for the LSSE that relies on the bulk magnon spin current created by the temperature gradient across the thickness of the FMI. We show that the spin current pumped into the metallic layer by the magnon accumulation in the FMI provides continuity of the spin current at the FMI/ML interface and is essential for the existence of the LSSE. The results of the theory are in good agreement with experimental LSSE data in YIG/Pt bilayers on the variation of the DC voltage with the sample temperature, with the FMI layer thickness and with the intensity of high magnetic fields. - Highlights: • We present a theory for the longitudinal spin Seebeck effect based on bulk magnons. • The model explains quantitatively the measured voltage in YIG/Pt created by the LSSE. • The model explains quantitatively the temperature dependence of LSSE measured in YIG/Pt. • The model agrees qualitatively with the measured dependence of LSSE with YIG thickness. • The model agrees qualitatively with the measured dependence of LSSE on magnetic field.

Spin manipulation and relaxation in spin-orbit qubits

Science.gov (United States)

Borhani, Massoud; Hu, Xuedong

2012-03-01

We derive a generalized form of the electric dipole spin resonance (EDSR) Hamiltonian in the presence of the spin-orbit interaction for single spins in an elliptic quantum dot (QD) subject to an arbitrary (in both direction and magnitude) applied magnetic field. We predict a nonlinear behavior of the Rabi frequency as a function of the magnetic field for sufficiently large Zeeman energies, and present a microscopic expression for the anisotropic electron g tensor. Similarly, an EDSR Hamiltonian is devised for two spins confined in a double quantum dot (DQD), where coherent Rabi oscillations between the singlet and triplet states are induced by jittering the inter-dot distance at the resonance frequency. Finally, we calculate two-electron-spin relaxation rates due to phonon emission, for both in-plane and perpendicular magnetic fields. Our results have immediate applications to current EDSR experiments on nanowire QDs, g-factor optimization of confined carriers, and spin decay measurements in DQD spin-orbit qubits.

In-plane and perpendicular exchange bias in [Pt/Co]/NiO multilayers

Energy Technology Data Exchange (ETDEWEB)

Lin, K.W.; Guo, J.Y.; Chang, S.C.; Ouyang, H. [Department of Materials Science and Engineering, National Chung Hsing University, Taichung 402 (China); Kahwaji, S.; Van Lierop, J. [Department of Physics and Astronomy, University of Manitoba, Winnipeg, R3T 2N2 (Canada); Phuoc, N.N.; Suzuki, T. [Information Storage Materials Laboratory, Toyota Technological Institute, Nagoya 468-8511 (Japan)

2007-12-15

Exchange bias in [Pt/Co]/NiO multilayers were studied as a function of film thickness and [Pt/Co] layer repetition. A strong temperature dependence of the coercivity, H{sub c}, and exchange bias field, H{sub ex}, was observed for the thick and thinnest [Pt/Co]/NiO multilayers. While the thinnest [Pt(3 nm)/Co(1.25 nm)]{sub 4}/NiO multilayers exhibits no in-plane exchange bias field, a perpendicular H{sub ex} {sub perpendicular} {sub to} {proportional_to} -150 Oe at 80 K was measured. By contrast, the thickest [Pt(12 nm)/Co(10 nm)]{sub 1}/NiO multilayers exhibited an in-plane H{sub ex//}{proportional_to}-600 Oe (with H{sub ex//}{proportional_to}-1300 Oe at 5 K) with no measurable perpendicular exchange bias field. The estimated interfacial exchange coupling energy implies the effective Co layer thickness contributing to the exchange bias is effective only in Co layer in contact with NiO bottom layer. AC susceptibility and the temperature dependence of H{sub ex} show that the a 1.25 nm thick Co component enables perpendicular exchange bias with a reduced blocking temperature T{sub B}{proportional_to}200 K, compared to that (T{sub B}{proportional_to}250 K) for the thick [Pt/Co]/NiO multilayers. This is attributed to disordered CoPt phases that formed due to intermixing between Co and Pt during deposition. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Pseudo spin-valve behavior in oxide ferromagnet/superconductor/ferromagnet trilayers

International Nuclear Information System (INIS)

Pang, B.S.H.; Bell, C.; Tomov, R.I.; Durrell, J.H.; Blamire, M.G.

2005-01-01

La 0.7 Ca 0.3 MnO 3 /YBa 2 Cu 3 O 7-δ /La 0.67 Sr 0.33 MnO 3 heterostructural devices with double coercivity have been fabricated. The superconducting critical current (I c ) and critical temperature in both parallel (P) and antiparallel (AP) magnetic configurations remained unchanged within our measurement limits. This observation is contrary to results obtained elsewhere using similar metallic systems. A pseudo spin-valve magnetoresistive (MR) characteristic was observed at bias current (I bias )∼I c at temperatures below the onset of superconductivity. The effect increased with decreasing temperature and I bias and can be explained using the assumption of the electron spin-charge separation

The magnetoresistive effect induced by stress in spin-valve structures

International Nuclear Information System (INIS)

Li-Jie, Qian; Xiao-Yong, Xu; Jing-Guo, Hu

2009-01-01

Using a method of free energy minimization, this paper investigates the magnetization properties of a ferromagnetic (FM) monolayer and an FM/antiferromagnetic (AFM) bilayer under a stress field, respectively. It then investigates the magnetoresistance (MR) of the spin-valve structure, which is built by an FM monolayer and an FM/AFM bilayer, and its dependence upon the applied stress field. The results show that under the stress field, the magnetization properties of the FM monolayer is obviously different from that of the FM/AFM bilayer, since the coupled AFM layer can obviously block the magnetization of the FM layer. This phenomenon makes the MR of the spin-valve structure become obvious. In detail, there are two behaviors for the MR of the spin-valve structure dependence upon the stress field distinguished by the coupling (FM coupling or AFM coupling) between the FM layer and the FM/AFM bilayer. Either behavior of the MR of the spin-valve structure depends on the stress field including its value and orientation. Based on these investigations, a perfect mechanical sensor at the nano-scale is suggested to be devised experimentally

Superconducting spin valves controlled by spiral re-orientation in B20-family magnets

Science.gov (United States)

Pugach, N. G.; Safonchik, M.; Champel, T.; Zhitomirsky, M. E.; Lähderanta, E.; Eschrig, M.; Lacroix, C.

2017-10-01

We propose a superconducting spin-triplet valve, which consists of a superconductor and an itinerant magnetic material, with the magnet showing an intrinsic non-collinear order characterized by a wave vector that may be aligned in a few equivalent preferred directions under the control of a weak external magnetic field. Re-orienting the spiral direction allows one to controllably modify long-range spin-triplet superconducting correlations, leading to spin-valve switching behavior. Our results indicate that the spin-valve effect may be noticeable. This bilayer may be used as a magnetic memory element for cryogenic nanoelectronics. It has the following advantages in comparison to superconducting spin valves proposed previously: (i) it contains only one magnetic layer, which may be more easily fabricated and controlled; (ii) its ground states are separated by a potential barrier, which solves the "half-select" problem of the addressed switch of memory elements.

Magnetoresistance Effect in NiFe/BP/NiFe Vertical Spin Valve Devices

Directory of Open Access Journals (Sweden)

Leilei Xu

2017-01-01

Full Text Available Two-dimensional (2D layered materials such as graphene and transition metal dichalcogenides are emerging candidates for spintronic applications. Here, we report magnetoresistance (MR properties of a black phosphorus (BP spin valve devices consisting of thin BP flakes contacted by NiFe ferromagnetic (FM electrodes. The spin valve effect has been observed from room temperature to 4 K, with MR magnitudes of 0.57% at 4 K and 0.23% at 300 K. In addition, the spin valve resistance is found to decrease monotonically as temperature is decreased, indicating that the BP thin film works as a conductive interlayer between the NiFe electrodes.

Control of spin-orbit torques through crystal symmetry in WTe2/ferromagnet bilayers

Science.gov (United States)

MacNeill, D.; Stiehl, G. M.; Guimaraes, M. H. D.; Buhrman, R. A.; Park, J.; Ralph, D. C.

2017-03-01

Recent discoveries regarding current-induced spin-orbit torques produced by heavy-metal/ferromagnet and topological-insulator/ferromagnet bilayers provide the potential for dramatically improved efficiency in the manipulation of magnetic devices. However, in experiments performed to date, spin-orbit torques have an important limitation--the component of torque that can compensate magnetic damping is required by symmetry to lie within the device plane. This means that spin-orbit torques can drive the most current-efficient type of magnetic reversal (antidamping switching) only for magnetic devices with in-plane anisotropy, not the devices with perpendicular magnetic anisotropy that are needed for high-density applications. Here we show experimentally that this state of affairs is not fundamental, but rather one can change the allowed symmetries of spin-orbit torques in spin-source/ferromagnet bilayer devices by using a spin-source material with low crystalline symmetry. We use WTe2, a transition-metal dichalcogenide whose surface crystal structure has only one mirror plane and no two-fold rotational invariance. Consistent with these symmetries, we generate an out-of-plane antidamping torque when current is applied along a low-symmetry axis of WTe2/Permalloy bilayers, but not when current is applied along a high-symmetry axis. Controlling spin-orbit torques by crystal symmetries in multilayer samples provides a new strategy for optimizing future magnetic technologies.

Magnetostrictive GMR spin valves with composite FeGa/FeCo free layers

Energy Technology Data Exchange (ETDEWEB)

Liu, Luping [Key Laboratory of Magnetic Materials and Devices & Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); Institute of Materials Science, School of Materials Science and Engineering, Shanghai University, Shanghai 200072 (China); Zhan, Qingfeng, E-mail: zhanqf@nimte.ac.cn, E-mail: runweili@nimte.ac.cn; Yang, Huali; Li, Huihui; Zhang, Shuanglan; Liu, Yiwei; Wang, Baomin; Li, Run-Wei, E-mail: zhanqf@nimte.ac.cn, E-mail: runweili@nimte.ac.cn [Key Laboratory of Magnetic Materials and Devices & Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); Tan, Xiaohua [Institute of Materials Science, School of Materials Science and Engineering, Shanghai University, Shanghai 200072 (China)

2016-03-15

We have fabricated strain-sensitive spin valves on flexible substrates by utilizing the large magnetostrictive FeGa alloy to promote the strain sensitivity and the composite free layer of FeGa/FeCo to avoid the drastic reduction of giant magnetoresistance (GMR) ratio. This kind of spin valve (SV-FeGa/FeCo) displays a MR ratio about 5.9%, which is comparable to that of the conventional spin valve (SV-FeCo) with a single FeCo free layer. Different from the previously reported works on magnetostrictive spin valves, the SV-FeGa/FeCo displays an asymmetric strain dependent GMR behavior. Upon increasing the lateral strain, the MR ratio for the ascending branch decreases more quickly than that for the descending branch, which is ascribed to the formation of a spiraling spin structure around the FeGa/FeCo interface under the combined influences of both magnetic field and mechanical strain. A strain sensitivity of GF = 7.2 was achieved at a magnetic bias field of -30 Oe in flexible SV-FeGa/FeCo, which is significantly larger than that of SV-FeCo.

Magnetostrictive GMR spin valves with composite FeGa/FeCo free layers

International Nuclear Information System (INIS)

Liu, Luping; Zhan, Qingfeng; Yang, Huali; Li, Huihui; Zhang, Shuanglan; Liu, Yiwei; Wang, Baomin; Li, Run-Wei; Tan, Xiaohua

2016-01-01

We have fabricated strain-sensitive spin valves on flexible substrates by utilizing the large magnetostrictive FeGa alloy to promote the strain sensitivity and the composite free layer of FeGa/FeCo to avoid the drastic reduction of giant magnetoresistance (GMR) ratio. This kind of spin valve (SV-FeGa/FeCo) displays a MR ratio about 5.9%, which is comparable to that of the conventional spin valve (SV-FeCo) with a single FeCo free layer. Different from the previously reported works on magnetostrictive spin valves, the SV-FeGa/FeCo displays an asymmetric strain dependent GMR behavior. Upon increasing the lateral strain, the MR ratio for the ascending branch decreases more quickly than that for the descending branch, which is ascribed to the formation of a spiraling spin structure around the FeGa/FeCo interface under the combined influences of both magnetic field and mechanical strain. A strain sensitivity of GF = 7.2 was achieved at a magnetic bias field of -30 Oe in flexible SV-FeGa/FeCo, which is significantly larger than that of SV-FeCo.

Magnetostrictive GMR spin valves with composite FeGa/FeCo free layers

Science.gov (United States)

Liu, Luping; Zhan, Qingfeng; Yang, Huali; Li, Huihui; Zhang, Shuanglan; Liu, Yiwei; Wang, Baomin; Tan, Xiaohua; Li, Run-Wei

2016-03-01

We have fabricated strain-sensitive spin valves on flexible substrates by utilizing the large magnetostrictive FeGa alloy to promote the strain sensitivity and the composite free layer of FeGa/FeCo to avoid the drastic reduction of giant magnetoresistance (GMR) ratio. This kind of spin valve (SV-FeGa/FeCo) displays a MR ratio about 5.9%, which is comparable to that of the conventional spin valve (SV-FeCo) with a single FeCo free layer. Different from the previously reported works on magnetostrictive spin valves, the SV-FeGa/FeCo displays an asymmetric strain dependent GMR behavior. Upon increasing the lateral strain, the MR ratio for the ascending branch decreases more quickly than that for the descending branch, which is ascribed to the formation of a spiraling spin structure around the FeGa/FeCo interface under the combined influences of both magnetic field and mechanical strain. A strain sensitivity of GF = 7.2 was achieved at a magnetic bias field of -30 Oe in flexible SV-FeGa/FeCo, which is significantly larger than that of SV-FeCo.

Role of the magnetic anisotropy in organic spin valves

Directory of Open Access Journals (Sweden)

V. Kalappattil

2017-09-01

Full Text Available Magnetic anisotropy plays an important role in determining the magnetic functionality of thin film based electronic devices. We present here, the first systematic study of the correlation between magnetoresistance (MR response in organic spin valves (OSVs and magnetic anisotropy of the bottom ferromagnetic electrode over a wide temperature range (10 K–350 K. The magnetic anisotropy of a La0.67Sr0.33MnO3 (LSMO film epitaxially grown on a SrTiO3 (STO substrate was manipulated by reducing film thickness from 200 nm to 20 nm. Substrate-induced compressive strain was shown to drastically increase the bulk in-plane magnetic anisotropy when the LSMO became thinner. In contrast, the MR response of LSMO/OSC/Co OSVs for many organic semiconductors (OSCs does not depend on either the in-plane magnetic anisotropy of the LSMO electrodes or their bulk magnetization. All the studied OSV devices show a similar temperature dependence of MR, indicating a similar temperature-dependent spinterface effect irrespective of LSMO thickness, resulting from the orbital hybridization of carriers at the OSC/LSMO interface.

Period-doubling bifurcation cascade observed in a ferromagnetic nanoparticle under the action of a spin-polarized current

Energy Technology Data Exchange (ETDEWEB)

Horley, Paul P., E-mail: paul.horley@cimav.edu.mx [Centro de Investigación en Materiales Avanzados, S.C. (CIMAV), Chihuahua/Monterrey, 120 Avenida Miguel de Cervantes, 31109 Chihuahua (Mexico); Kushnir, Mykola Ya. [Yuri Fedkovych Chernivtsi National University, 2 Kotsyubynsky str., 58012 Chernivtsi (Ukraine); Morales-Meza, Mishel [Centro de Investigación en Materiales Avanzados, S.C. (CIMAV), Chihuahua/Monterrey, 120 Avenida Miguel de Cervantes, 31109 Chihuahua (Mexico); Sukhov, Alexander [Institut für Physik, Martin-Luther Universität Halle-Wittenberg, 06120 Halle (Saale) (Germany); Rusyn, Volodymyr [Yuri Fedkovych Chernivtsi National University, 2 Kotsyubynsky str., 58012 Chernivtsi (Ukraine)

2016-04-01

We report on complex magnetization dynamics in a forced spin valve oscillator subjected to a varying magnetic field and a constant spin-polarized current. The transition from periodic to chaotic magnetic motion was illustrated with bifurcation diagrams and Hausdorff dimension – the methods developed for dissipative self-organizing systems. It was shown that bifurcation cascades can be obtained either by tuning the injected spin-polarized current or by changing the magnitude of applied magnetic field. The order–chaos transition in magnetization dynamics can be also directly observed from the hysteresis curves. The resulting complex oscillations are useful for development of spin-valve devices operating in harmonic and chaotic modes.

Spin effects in elastic scattering of nucleons and new approach to problem of account for spin structure of hadrons

International Nuclear Information System (INIS)

Babaev, Z.R.; Shchelkachev, A.V.

1991-01-01

Prospects of decribing polarization effects within the framework of quark-parton models (QPM) using a density matrix in order to describe the parton spin states in hadrons are discussed. Such an approach allows one to get rid of contradictions occuring when describing the QPM of reactions of hadrons polarized in perpendicular to the scattering plane in case of applying spin distribution functions. Different model predictions for the observed one- and two-spin correlations in elastic nucleon-nucleon scattering are analyzed. 12 refs., 2 tabs

Giant Spin Hall Effect and Switching Induced by Spin-Transfer Torque in a W /Co40Fe40B20/MgO Structure with Perpendicular Magnetic Anisotropy

Science.gov (United States)

Hao, Qiang; Xiao, Gang

2015-03-01

We obtain robust perpendicular magnetic anisotropy in a β -W /Co40Fe40B20/MgO structure without the need of any insertion layer between W and Co40Fe40B20 . This is achieved within a broad range of W thicknesses (3.0-9.0 nm), using a simple fabrication technique. We determine the spin Hall angle (0.40) and spin-diffusion length for the bulk β form of tungsten with a large spin-orbit coupling. As a result of the giant spin Hall effect in β -W and careful magnetic annealing, we significantly reduce the critical current density for the spin-transfer-torque-induced magnetic switching in Co40Fe40B20 . The elemental β -W is a superior candidate for magnetic memory and spin-logic applications.

Spin-dependent Seebeck coefficients of Ni80Fe20 and Co in nanopillar spin valves

NARCIS (Netherlands)

Dejene, F. K.; Flipse, J.; van Wees, B. J.

2012-01-01

We have experimentally determined the spin-dependent Seebeck coefficient of permalloy (Ni80Fe20) and cobalt (Co) using nanopillar spin valve devices, a stack of two ferromagnetic layers separated by a nonmagnetic layer. The devices were specifically designed to separate heat-related effects from

Spin valve effect in single-atom contacts

International Nuclear Information System (INIS)

Ziegler, M; Neel, N; Berndt, R; Lazo, C; Ferriani, P; Heinze, S; Kroeger, J

2011-01-01

Magnetic single-atom contacts have been controllably fabricated with a scanning tunnelling microscope. A voltage-dependent spin valve effect with conductance variations of ∼40% is reproducibly observed from contacts comprising a Cr-covered tip and Co and Cr atoms on ferromagnetic nanoscale islands on W(110) with opposite magnetization. The spin-dependent conductances are interpreted from first-principles calculations in terms of the orbital character of the relevant electronic states of the junction.

Dependency of tunneling magnetoresistance ratio on Pt seed-layer thickness for double MgO perpendicular magnetic tunneling junction spin-valves with a top Co2Fe6B2 free layer ex-situ annealed at 400 °C.

Science.gov (United States)

Takemura, Yasutaka; Lee, Du-Yeong; Lee, Seung-Eun; Park, Jea-Gun

2016-12-02

For the double MgO based perpendicular magnetic tunneling junction (p-MTJ) spin-valves with a top Co 2 Fe 6 B 2 free layer ex situ annealed at 400 °C, the tunneling-magnetoresistance ratio (TMR) strongly depended on the platinum (Pt) seed layer thickness (t Pt ): it peaked (∼134%) at a specific t Pt (3.3 nm). The TMR ratio was initially and slightly increased from 113%-134% by the enhancement of the magnetic moment of the Co 2 Fe 6 B 2 pinned layer when t Pt increased from 2.0-3.3 nm, and then rapidly decreased from 134%-38.6% by the degrading face-centered-cubic crystallinity of the MgO tunneling barrier when t Pt increased from 3.3-14.3 nm.

Propagation of magnetostatic spin waves in an yttrium iron garnet film for out-of-plane magnetic fields

Science.gov (United States)

Bang, Wonbae; Lim, Jinho; Trossman, Jonathan; Tsai, C. C.; Ketterson, John B.

2018-06-01

We have observed the propagation of spin waves across a thin yttrium iron garnet film on (1 1 1) gadolinium gallium garnet for magnetic fields inclined with respect to the film plane. Two principle planes were studied: that for H in the plane defined by the wave vector k and the plane normal, n, with limiting forms corresponding to the Backward Volume and Forward Volume modes, and that for H in the plane perpendicular to k, with limiting forms corresponding to the Damon-Eshbach and Forward Volume modes. By exciting the wave at one edge of the film and observing the field dependence of the phase of the received signal at the opposing edge we determined the frequency vs. wavevector relation, ω = ω (k), of various propagating modes in the film. Avoided crossings are observed in the Damon-Eshbach and Forward Volume regimes when the propagating mode intersects the higher, exchange split, volume modes, leading to an extinction of the propagating mode; analysis of the resulting behavior allows a determination of the exchange parameter. The experimental results are compared with theoretical simulations.

Mutual synchronization of spin-torque oscillators consisting of perpendicularly magnetized free layers and in-plane magnetized pinned layers

Science.gov (United States)

Taniguchi, Tomohiro; Tsunegi, Sumito; Kubota, Hitoshi

2018-01-01

A mutual synchronization of spin-torque oscillators coupled through current injection is studied theoretically. Models of electrical coupling in parallel and series circuits are proposed. Solving the Landau-Lifshitz-Gilbert equation, excitation of in-phase or antiphase synchronization, depending on the ways the oscillators are connected, is found. It is also found from both analytical and numerical calculations that the current-frequency relations for both parallel and series circuits are the same as that for a single spin-torque oscillator.

Thickness dependence of the triplet spin-valve effect in superconductor-ferromagnet heterostructures

Energy Technology Data Exchange (ETDEWEB)

Lenk, Daniel; Zdravkov, Vladimir I.; Kehrle, Jan; Obermeier, Guenther; Krug von Nidda, Hans-Albrecht; Mueller, Claus; Horn, Siegfried; Tidecks, Reinhard [Institut fuer Physik, Universitaet Augsburg (Germany); Morari, Roman [Institut fuer Physik, Universitaet Augsburg (Germany); D. Ghitsu Institute of Electronic Engineering and Nanotechnologies ASM, Kishinev (Moldova, Republic of); Sidorenko, Anatolie S. [D. Ghitsu Institute of Electronic Engineering and Nanotechnologies ASM, Kishinev (Moldova, Republic of); Tagirov, Lenar [Solid State Physics Department, Kazan Federal University (Russian Federation)

2015-07-01

We investigated the triplet spin-valve effect in nanoscale layered S/F{sub 1}/N/F{sub 2}/AF heterostructures with varying F{sub 1}-layer thickness (where S=Nb is a singlet superconducting, F{sub 1}=Cu{sub 41}Ni{sub 59} and F{sub 2}=Co a ferromagnetic, and N a normal-conducting, non-magnetic layer). The theory predicts a long-range, odd-in-frequency triplet component of superconductivity at non-collinear alignment of the magnetizations of F{sub 1} and F{sub 2}. This triplet component exhausts the singlet state and, thus, lowers the superconducting transition temperature, T{sub c}, yielding a global minimum of T{sub c} close to the perpendicular mutual orientations of the magnetizations. We found an oscillating decay of T{sub c} suppression, due to the generation of the triplet component, with increasing F{sub 1} layer thickness, which we discuss in the framework of recent theories.

Proposal for a graphene-based all-spin logic gate

Science.gov (United States)

Su, Li; Zhao, Weisheng; Zhang, Yue; Querlioz, Damien; Zhang, Youguang; Klein, Jacques-Olivier; Dollfus, Philippe; Bournel, Arnaud

2015-02-01

In this work, we present a graphene-based all-spin logic gate (G-ASLG) that integrates the functionalities of perpendicular anisotropy magnetic tunnel junctions (p-MTJs) with spin transport in graphene-channel. It provides an ideal integration of logic and memory. The input and output states are defined as the relative magnetization between free layer and fixed layer of p-MTJs. They can be probed by the tunnel magnetoresistance and controlled by spin transfer torque effect. Using lateral non-local spin valve, the spin information is transmitted by the spin-current interaction through graphene channels. By using a physics-based spin current compact model, the operation of G-ASLG is demonstrated and its performance is analyzed. It allows us to evaluate the influence of parameters, such as spin injection efficiency, spin diffusion length, contact area, the device length, and their interdependence, and to optimize the energy and dynamic performance. Compared to other beyond-CMOS solutions, longer spin information transport length (˜μm), higher data throughput, faster computing speed (˜ns), and lower power consumption (˜μA) can be expected from the G-ASLG.

Proposal for a graphene-based all-spin logic gate

International Nuclear Information System (INIS)

Su, Li; Zhao, Weisheng; Zhang, Yue; Querlioz, Damien; Klein, Jacques-Olivier; Dollfus, Philippe; Bournel, Arnaud; Zhang, Youguang

2015-01-01

In this work, we present a graphene-based all-spin logic gate (G-ASLG) that integrates the functionalities of perpendicular anisotropy magnetic tunnel junctions (p-MTJs) with spin transport in graphene-channel. It provides an ideal integration of logic and memory. The input and output states are defined as the relative magnetization between free layer and fixed layer of p-MTJs. They can be probed by the tunnel magnetoresistance and controlled by spin transfer torque effect. Using lateral non-local spin valve, the spin information is transmitted by the spin-current interaction through graphene channels. By using a physics-based spin current compact model, the operation of G-ASLG is demonstrated and its performance is analyzed. It allows us to evaluate the influence of parameters, such as spin injection efficiency, spin diffusion length, contact area, the device length, and their interdependence, and to optimize the energy and dynamic performance. Compared to other beyond-CMOS solutions, longer spin information transport length (∼μm), higher data throughput, faster computing speed (∼ns), and lower power consumption (∼μA) can be expected from the G-ASLG

Superconducting spin valve effect in Fe/In based heterostructures

Energy Technology Data Exchange (ETDEWEB)

Leksin, Pavel; Schumann, Joachim; Kataev, Vladislav; Schmidt, Oliver; Buechner, Bernd [Leibniz Institute for Solid State and Materials Research IFW Dresden (Germany); Garifyanov, Nadir; Garifullin, Ilgiz [Zavoisky Physical-Technical Institute, Kazan Scientific Center, Russian Academy of Sciences (Russian Federation)

2015-07-01

We report on magnetic and superconducting properties of the spin-valve multilayer system CoOx/Fe1/Cu/Fe2/In. The Superconducting Spin Valve Effect (SSVE) assumes the T{sub c} difference between parallel (P) and antiparallel (AP) orientations of the Fe1 and Fe2 layers' magnetizations. The SSVE value oscillates and changes its sign when the Fe2 layer thickness d{sub Fe2} is varied from 0 to 5 nm. The SSVE value is positive, as expected, in the range 0.4 nm ≤ d{sub Fe2} ≤ 0.8 nm. For a rather broad range of thicknesses 1 nm ≤ d{sub Fe2} ≤ 2.6 nm the SSVE has negative sign assuming the inverse SSVE. Moreover, the magnitude of the inverse effect is larger than that of the positive direct effect. We attribute these oscillations to a quantum interference of the cooper pair wave functions in the magnetic part of the system. For most of the spin-valve samples from this set we experimentally realized the full switching between normal and superconducting states due to direct and inverse SSVE. The analysis of the experimental data has enabled the determination of all microscopic parameters of the studied system.

Spin and Charge Transport in 2D Materials and Magnetic Insulator/Metal Heterostructures

Science.gov (United States)

Amamou, Walid

Spintronic devices are very promising for future information storage, logic operations and computation and have the potential to replace current CMOS technology approaching the scaling limit. In particular, the generation and manipulation of spin current enables the integration of storage and logic within the same circuit for more powerful computing architectures. In this thesis, we examine the manipulation of spins in 2D materials such as graphene and metal/magnetic insulator heterostructures. In particular, we investigate the feasibility for achieving magnetization switching of a nanomagnet using graphene as a nonmagnetic channel material for All Spin Logic Device applications. Using in-situ MBE deposition of nanomagnet on graphene spin valve, we demonstrate the presence of an interfacial spin dephasing at the interface between the graphene and the nanomagnet. By introducing a Cu spacer between the nanomagnet and graphene, we demonstrate that this interfacial effect is related to an exchange interaction between the spin current and the disordered magnetic moment of the nanomagnet in the first monolayer. In addition to the newly discovered interfacial spin relaxation effect, the extracted contact resistance area product of the nanomagnet/graphene interface is relatively high on the order of 1Omicrom2. In practice, reducing the contact resistance will be as important as eliminating the interfacial relaxation in order to achieve magnetization switching. Furthermore, we examine spin manipulation in a nonmagnetic Pt using an internal magnetic exchange field produced by the adjacent magnetic insulator CoFe2O4 grown by MBE. Here, we report the observation of a strong magnetic proximity effect of Pt deposited on top of a perpendicular magnetic anisotropy (PMA) inverse spinel material Cobalt Ferrite (CFO, CoFe 2O4). The CFO was grown by MBE and its magnetization was characterized by Vibrating Sample Magnetometry (VSM) demonstrating the strong out of plane magnetic

Dynamic tracking of prosthetic valve motion and deformation from bi-plane x-ray views: feasibility study

Science.gov (United States)

Hatt, Charles R.; Wagner, Martin; Raval, Amish N.; Speidel, Michael A.

2016-03-01

Transcatheter aortic valve replacement (TAVR) requires navigation and deployment of a prosthetic valve within the aortic annulus under fluoroscopic guidance. To support improved device visualization in this procedure, this study investigates the feasibility of frame-by-frame 3D reconstruction of a moving and expanding prosthetic valve structure from simultaneous bi-plane x-ray views. In the proposed method, a dynamic 3D model of the valve is used in a 2D/3D registration framework to obtain a reconstruction of the valve. For each frame, valve model parameters describing position, orientation, expansion state, and deformation are iteratively adjusted until forward projections of the model match both bi-plane views. Simulated bi-plane imaging of a valve at different signal-difference-to-noise ratio (SDNR) levels was performed to test the approach. 20 image sequences with 50 frames of valve deployment were simulated at each SDNR. The simulation achieved a target registration error (TRE) of the estimated valve model of 0.93 +/- 2.6 mm (mean +/- S.D.) for the lowest SDNR of 2. For higher SDNRs (5 to 50) a TRE of 0.04 mm +/- 0.23 mm was achieved. A tabletop phantom study was then conducted using a TAVR valve. The dynamic 3D model was constructed from high resolution CT scans and a simple expansion model. TRE was 1.22 +/- 0.35 mm for expansion states varying from undeployed to fully deployed, and for moderate amounts of inter-frame motion. Results indicate that it is feasible to use bi-plane imaging to recover the 3D structure of deformable catheter devices.

Microwave spectroscopy and electronic transport properties of ferromagnetic Josephson junctions and superconducting spin-valves

Energy Technology Data Exchange (ETDEWEB)

Thalmann, Marcel; Rudolf, Marcel; Pietsch, Torsten [Zukunftskolleg and Department of Physics, University of Konstanz, Universitaetsstrasse 10, 78464 Konstanz (Germany)

2016-07-01

Hybrid superconducting nanostructures recently attracted tremendous interest, due to their great potential in dissipation-less spin-electronics with unprecedented switching rates. The practical realisation of such devices, however, requires a complete understanding of the transfer and dynamics of spin- and charge currents between superconducting (S) and ferromagnetic (F) circuit elements, as well as the coupling between spin- and charge degrees of freedom in these systems. We investigate novel transport phenomena in superconductor-ferromagnet hybrid nanostructures under non-equilibrium conditions. Microwave spectroscopy is used to elucidate fundamental questions related to the complex interplay of competing order parameters and the question of relaxation mechanisms of non-equilibrium distributions with respect to spin, charge and energy. Recent experiments on two complimentary device structures are discussed: (I) in diffusive S/F/S Josephson junctions with non-sinusoidal current-phase relationship and (II) local and non-local transport measurements and microwave spectroscopy in F/S/F lateral spin-valves.

On spin and matrix models in the complex plane

International Nuclear Information System (INIS)

Damgaard, P.H.; Heller, U.M.

1993-01-01

We describe various aspects of statistical mechanics defined in the complex temperature or coupling-constant plane. Using exactly solvable models, we analyse such aspects as renormalization group flows in the complex plane, the distribution of partition function zeros, and the question of new coupling-constant symmetries of complex-plane spin models. The double-scaling form of matrix models is shown to be exactly equivalent to finite-size scaling of two-dimensional spin systems. This is used to show that the string susceptibility exponents derived from matrix models can be obtained numerically with very high accuracy from the scaling of finite-N partition function zeros in the complex plane. (orig.)

Resistive Switching and Voltage Induced Modulation of Tunneling Magnetoresistance in Nanosized Perpendicular Organic Spin Valves

Science.gov (United States)

Schmidt, Georg; Goeckeritz, Robert; Homonnay, Nico; Mueller, Alexander; Fuhrmann, Bodo

Resistive switching has already been reported in organic spin valves (OSV), however, its origin is still unclear. We have fabricated nanosized OSV based on La0.7Sr0.3MnO3/Alq3/Co. These devices show fully reversible resistive switching of up to five orders of magnitude. The magnetoresistance (MR) is modulated during the switching process from negative (-70%) to positive values (+23%). The results are reminiscent of experiments claiming magnetoelectric coupling in LSMO based tunneling structures using ferroelectric barriers. By analyzing the I/V characteristics of the devices we can show that transport is dominated by tunneling through pinholes. The resistive switching is caused by voltage induced creation and motion of oxygen vacancies at the LSMO surface, however, the resulting tunnel barrier is complemented by a second adjacent barrier in the organic semiconductor. Our model shows that the barrier in the organic material is constant, causing the initial MR while the barrier in the LMSO can be modulated by the voltage resulting in the resistive switching and the modulation of the MR as the coupling to the states in the LSMO changes. A switching caused by LSMO only is also supported by the fact that replacing ALQ3 by H2PC yields almost identical results. Supported by the DFG in the SFB762.

The effect of electrodes on 11 acene molecular spin valve: Semi-empirical study

Science.gov (United States)

Aadhityan, A.; Preferencial Kala, C.; John Thiruvadigal, D.

2017-10-01

A new revolution in electronics is molecular spintronics, with the contemporary evolution of the two novel disciplines of spintronics and molecular electronics. The key point is the creation of molecular spin valve which consists of a diamagnetic molecule in between two magnetic leads. In this paper, non-equilibrium Green's function (NEGF) combined with Extended Huckel Theory (EHT); a semi-empirical approach is used to analyse the electron transport characteristics of 11 acene molecular spin valve. We examine the spin-dependence transport on 11 acene molecular junction with various semi-infinite electrodes as Iron, Cobalt and Nickel. To analyse the spin-dependence transport properties the left and right electrodes are joined to the central region in parallel and anti-parallel configurations. We computed spin polarised device density of states, projected device density of states of carbon and the electrode element, and transmission of these devices. The results demonstrate that the effect of electrodes modifying the spin-dependence behaviours of these systems in a controlled way. In Parallel and anti-parallel configuration the separation of spin up and spin down is lager in the case of iron electrode than nickel and cobalt electrodes. It shows that iron is the best electrode for 11 acene spin valve device. Our theoretical results are reasonably impressive and trigger our motivation for comprehending the transport properties of these molecular-sized contacts.

Spin torque switching of 20 nm magnetic tunnel junctions with perpendicular anisotropy

Science.gov (United States)

Gajek, M.; Nowak, J. J.; Sun, J. Z.; Trouilloud, P. L.; O'Sullivan, E. J.; Abraham, D. W.; Gaidis, M. C.; Hu, G.; Brown, S.; Zhu, Y.; Robertazzi, R. P.; Gallagher, W. J.; Worledge, D. C.

2012-03-01

Spin-transfer torque magnetic random access memory (STT-MRAM) is one of the most promising emerging non-volatile memory technologies. MRAM has so far been demonstrated with a unique combination of density, speed, and non-volatility in a single chip, however, without the capability to replace any single mainstream memory. In this paper, we demonstrate the basic physics of spin torque switching in 20 nm diameter magnetic tunnel junctions with perpendicular magnetic anisotropy materials. This deep scaling capability clearly indicates the STT MRAM device itself may be suitable for integration at much higher densities than previously proven.

Spin-orbit torque induced switching in a magnetic insulator thin film with perpendicular magnetic anisotropy

Science.gov (United States)

Li, J. X.; Yu, G. Q.; Tang, C.; Wang, K. L.; Shi, J.

Spin-orbit torque (SOT) has been demonstrated to be efficient to manipulate the magnetization in heavy-metal/ferromagnetic metal (HM/FMM) heterostructures. In HM/magnetic insulator (MI) heterostructures, charge currents do not flow in MI, but pure spin currents generated by the spin Hall effect in HM can enter the MI layer to cause magnetization dynamics. Here we report SOT-induced magnetization switching in Tm3Fe5O12/Pt heterostructures, where Tm3Fe5O12 (TmIG) is a MI grown by pulsed laser deposition with perpendicular magnetic anisotropy. The anomalous Hall signal in Pt is used as a probe to detect the magnetization switching. Effective magnetic fields due to the damping-like and field-like torques are extracted using a harmonic Hall detection method. The experiments are carried out in heterostructures with different TmIG film thicknesses. Both the switching and harmonic measurements indicate a more efficient SOT generation in HM/MI than in HM/FMM heterostructures. Our comprehensive experimental study and detailed analysis will be presented. This work was supported as part of the SHINES, an Energy Frontier Research Center funded by the US Department of Energy, Office of Science, Basic Energy Sciences under Award No. SC0012670.

Aging effect of spin accumulation in non-local spin valves

International Nuclear Information System (INIS)

Zhao, Bing; Zhang, Ziyu; Chen, Xiaobing; Zhang, Xiaohan; Pan, Jiahui; Ma, Jiajun; Li, Juan; Wang, Zhicheng; Wang, Le; Xu, Xiaoguang; Jiang, Yong

2017-01-01

Highlights: • First time to reveal the whole temporal evolution life of spintronics devices. • The gradual oxidation of the junctions’ areas and that of the channel are confirmed to be the predominant factors to determine the temporal evolution. • Physically, the temporal evolution can be evaluated by theories of S. Takahashi and A. Fert. • This study may offer some useful advice for the design and protection of future industrial spintronics devices. - Abstract: A temporal evolution of spin accumulation of Co/MgO/Ag spin valves have been studied by using the nonlocal spin detection technique over almost a 3-month period in the ambient environment after the fabrication of the devices. Three different stages of the spin accumulation are first observed due to aging effect. The aging effect comes from two contributions–the gradual oxidation of the Ag/MgO and MgO/Co interfaces at the junctions’ areas which arises from the annealing process and the oxidation of the side surfaces of the Ag channels. The theories of S. Takahashi and A. Fert are introduced to evaluate the different evolution stages of spin accumulation.

Aging effect of spin accumulation in non-local spin valves

Energy Technology Data Exchange (ETDEWEB)

Zhao, Bing; Zhang, Ziyu; Chen, Xiaobing; Zhang, Xiaohan; Pan, Jiahui; Ma, Jiajun; Li, Juan; Wang, Zhicheng [State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083 (China); Wang, Le, E-mail: wangle@ruc.edu.cn [Department of Physics, Renmin University of China, Beijing 100872 (China); Xu, Xiaoguang, E-mail: xgxu@ustb.edu.cn [State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083 (China); Jiang, Yong [State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083 (China)

2017-06-15

Highlights: • First time to reveal the whole temporal evolution life of spintronics devices. • The gradual oxidation of the junctions’ areas and that of the channel are confirmed to be the predominant factors to determine the temporal evolution. • Physically, the temporal evolution can be evaluated by theories of S. Takahashi and A. Fert. • This study may offer some useful advice for the design and protection of future industrial spintronics devices. - Abstract: A temporal evolution of spin accumulation of Co/MgO/Ag spin valves have been studied by using the nonlocal spin detection technique over almost a 3-month period in the ambient environment after the fabrication of the devices. Three different stages of the spin accumulation are first observed due to aging effect. The aging effect comes from two contributions–the gradual oxidation of the Ag/MgO and MgO/Co interfaces at the junctions’ areas which arises from the annealing process and the oxidation of the side surfaces of the Ag channels. The theories of S. Takahashi and A. Fert are introduced to evaluate the different evolution stages of spin accumulation.

Quantum rings in magnetic fields and spin current generation.

Science.gov (United States)

Cini, Michele; Bellucci, Stefano

2014-04-09

We propose three different mechanisms for pumping spin-polarized currents in a ballistic circuit using a time-dependent magnetic field acting on an asymmetrically connected quantum ring at half filling. The first mechanism works thanks to a rotating magnetic field and produces an alternating current with a partial spin polarization. The second mechanism works by rotating the ring in a constant field; like the former case, it produces an alternating charge current, but the spin current is dc. Both methods do not require a spin-orbit interaction to achieve the polarized current, but the rotating ring could be used to measure the spin-orbit interaction in the ring using characteristic oscillations. On the other hand, the last mechanism that we propose depends on the spin-orbit interaction in an essential way, and requires a time-dependent magnetic field in the plane of the ring. This arrangement can be designed to pump a purely spin current. The absence of a charge current is demonstrated analytically. Moreover, a simple formula for the current is derived and compared with the numerical results.

In-plane nuclear field formation investigated in single self-assembled quantum dots

Science.gov (United States)

Yamamoto, S.; Matsusaki, R.; Kaji, R.; Adachi, S.

2018-02-01

We studied the formation mechanism of the in-plane nuclear field in single self-assembled In0.75Al0.25As /Al0.3Ga0.7As quantum dots. The Hanle curves with an anomalously large width and hysteretic behavior at the critical transverse magnetic field were observed in many single quantum dots grown in the same sample. In order to explain the anomalies in the Hanle curve indicating the formation of a large nuclear field perpendicular to the photo-injected electron spin polarization, we propose a new model based on the current phenomenological model for dynamic nuclear spin polarization. The model includes the effects of the nuclear quadrupole interaction and the sign inversion between in-plane and out-of-plane components of nuclear g factors, and the model calculations reproduce successfully the characteristics of the observed anomalies in the Hanle curves.

Size dependence of spin-torque induced magnetic switching in CoFeB-based perpendicular magnetization tunnel junctions (invited)

Science.gov (United States)

Sun, J. Z.; Trouilloud, P. L.; Gajek, M. J.; Nowak, J.; Robertazzi, R. P.; Hu, G.; Abraham, D. W.; Gaidis, M. C.; Brown, S. L.; O'Sullivan, E. J.; Gallagher, W. J.; Worledge, D. C.

2012-04-01

CoFeB-based magnetic tunnel junctions with perpendicular magnetic anisotropy are used as a model system for studies of size dependence in spin-torque-induced magnetic switching. For integrated solid-state memory applications, it is important to understand the magnetic and electrical characteristics of these magnetic tunnel junctions as they scale with tunnel junction size. Size-dependent magnetic anisotropy energy, switching voltage, apparent damping, and anisotropy field are systematically compared for devices with different materials and fabrication treatments. Results reveal the presence of sub-volume thermal fluctuation and reversal, with a characteristic length-scale of the order of approximately 40 nm, depending on the strength of the perpendicular magnetic anisotropy and exchange stiffness. To have the best spin-torque switching efficiency and best stability against thermal activation, it is desirable to optimize the perpendicular anisotropy strength with the junction size for intended use. It also is important to ensure strong exchange-stiffness across the magnetic thin film. These combine to give an exchange length that is comparable or larger than the lateral device size for efficient spin-torque switching.

Excitonic magnet in external field: Complex order parameter and spin currents

Science.gov (United States)

Geffroy, D.; Hariki, A.; Kuneš, J.

2018-04-01

We investigate spin-triplet exciton condensation in the two-orbital Hubbard model close to half-filling by means of dynamical mean-field theory. Employing an impurity solver that handles complex off-diagonal hybridization functions, we study the behavior of excitonic condensate in stoichiometric and doped systems subject to external magnetic field. We find a general tendency of the triplet order parameter to lie perpendicular with the applied field and identify exceptions from this rule. For solutions exhibiting k -odd spin textures, we discuss the Bloch theorem, which, in the absence of spin-orbit coupling, forbids the appearance of spontaneous net spin current. We demonstrate that the Bloch theorem is not obeyed by the dynamical mean-field theory.

Flexible semi-transparent organic spin valve based on bathocuproine

International Nuclear Information System (INIS)

Sun, Xiangnan; Bedoya-Pinto, Amilcar; Llopis, Roger; Casanova, Fèlix; Hueso, Luis E.

2014-01-01

Organic semiconductors are attractive materials for advanced spintronic applications due to their long spin lifetimes and, simultaneously, their mechanical flexibility. With the aim of combining these advantages in a single device, we report on the fabrication and properties of a mechanically flexible bathocuproine-based spin valve. This organic spin device shows great stability on both electrical and magneto-transport properties upon mechanical bending at different radius (up to r = 5 mm), while featuring long-lasting endurance (on bending over 50 times). The room-temperature magnetoresistance ratio reaches up to 3.5%, and is notably preserved under air atmosphere. The observation of spin transport at room-temperature, combined with the outstanding mechanical properties and air stability, highlights the potential of bathocuproine-based spin devices towards applications.

Spin current

CERN Document Server

Valenzuela, Sergio O; Saitoh, Eiji; Kimura, Takashi

2012-01-01

In a new branch of physics and technology called spin-electronics or spintronics, the flow of electrical charge (usual current) as well as the flow of electron spin, the so-called 'spin current', are manipulated and controlled together. This book provides an introduction and guide to the new physics and application of spin current.

Theoretical study on the perpendicular anisotropic magnetoresistance using Rashba-type ferromagnetic model

Science.gov (United States)

Yahagi, Y.; Miura, D.; Sakuma, A.

2018-05-01

We investigated the anisotropic magnetoresistance (AMR) effects in ferromagnetic-metal multi-layers stacked on non-magnetic insulators in the context of microscopic theory. We represented this situation with tight-binding models that included the exchange and Rashba fields, where the Rashba field was assumed to originate from spin-orbit interactions as junction effects with the insulator. To describe the AMR ratios, the DC conductivity was calculated based on the Kubo formula. As a result, we showed that the Rashba field induced both perpendicular and in-plane AMR effects and that the perpendicular AMR effect rapidly decayed with increasing film thickness.

Electric-field induced spin accumulation in the Landau level states of topological insulator thin films

Science.gov (United States)

Siu, Zhuo Bin; Chowdhury, Debashree; Basu, Banasri; Jalil, Mansoor B. A.

2017-08-01

A topological insulator (TI) thin film differs from the more typically studied thick TI system in that the former has both a top and a bottom surface where the states localized at both surfaces can couple to one other across the finite thickness. An out-of-plane magnetic field leads to the formation of discrete Landau level states in the system, whereas an in-plane magnetization breaks the angular momentum symmetry of the system. In this work, we study the spin accumulation induced by the application of an in-plane electric field to the TI thin film system where the Landau level states and inter-surface coupling are simultaneously present. We show, via Kubo formula calculations, that the in-plane spin accumulation perpendicular to the magnetization due to the electric field vanishes for a TI thin film with symmetric top and bottom surfaces. A finite in-plane spin accumulation perpendicular to both the electric field and magnetization emerges upon applying either a differential magnetization coupling or a potential difference between the two film surfaces. This spin accumulation results from the breaking of the antisymmetry of the spin accumulation around the k-space equal-energy contours.

Spin dynamics of paramagnetic centers with anisotropic g tensor and spin of 1/2

Science.gov (United States)

Maryasov, Alexander G.; Bowman, Michael K.

2012-08-01

The influence of g tensor anisotropy on spin dynamics of paramagnetic centers having real or effective spin of 1/2 is studied. The g anisotropy affects both the excitation and the detection of EPR signals, producing noticeable differences between conventional continuous-wave (cw) EPR and pulsed EPR spectra. The magnitudes and directions of the spin and magnetic moment vectors are generally not proportional to each other, but are related to each other through the g tensor. The equilibrium magnetic moment direction is generally parallel to neither the magnetic field nor the spin quantization axis due to the g anisotropy. After excitation with short microwave pulses, the spin vector precesses around its quantization axis, in a plane that is generally not perpendicular to the applied magnetic field. Paradoxically, the magnetic moment vector precesses around its equilibrium direction in a plane exactly perpendicular to the external magnetic field. In the general case, the oscillating part of the magnetic moment is elliptically polarized and the direction of precession is determined by the sign of the g tensor determinant (g tensor signature). Conventional pulsed and cw EPR spectrometers do not allow determination of the g tensor signature or the ellipticity of the magnetic moment trajectory. It is generally impossible to set a uniform spin turning angle for simple pulses in an unoriented or 'powder' sample when g tensor anisotropy is significant.

Generation of pure spin currents via spin Seebeck effect in self-biased hexagonal ferrite thin films

Energy Technology Data Exchange (ETDEWEB)

Li, Peng; Ellsworth, David; Chang, Houchen; Janantha, Praveen; Richardson, Daniel; Phillips, Preston; Vijayasarathy, Tarah; Wu, Mingzhong, E-mail: mwu@lamar.colostate.edu [Department of Physics, Colorado State University, Fort Collins, Colorado 80523 (United States); Shah, Faisal [Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556 (United States)

2014-12-15

Light-induced generation of pure spin currents in a Pt(2.5 nm)/BaFe{sub 12}O{sub 19}(1.2 μm)/sapphire(0.5 mm) structure is reported. The BaFe{sub 12}O{sub 19} film had strong in-plane uniaxial anisotropy and was therefore self-biased. Upon exposure to light, a temperature difference (ΔT) was established across the BaFe{sub 12}O{sub 19} thickness that gave rise to a pure spin current in the Pt via the spin Seebeck effect. Via the inverse spin Hall effect, the spin current produced an electric voltage across one of the Pt lateral dimensions. The voltage varied with time in the same manner as ΔT and flipped its sign when the magnetization in BaFe{sub 12}O{sub 19} was reversed.

Current-induced torques and interfacial spin-orbit coupling

KAUST Repository

Haney, Paul M.; Lee, Hyun-Woo; Lee, Kyung-Jin; Manchon, Aurelien; Stiles, M. D.

2013-01-01

In bilayer systems consisting of an ultrathin ferromagnetic layer adjacent to a metal with strong spin-orbit coupling, an applied in-plane current induces torques on the magnetization. The torques that arise from spin-orbit coupling are of particular interest. Here we use first-principles methods to calculate the current-induced torque in a Pt-Co bilayer to help determine the underlying mechanism. We focus exclusively on the analog to the Rashba torque, and do not consider the spin Hall effect. The details of the torque depend strongly on the layer thicknesses and the interface structure, providing an explanation for the wide variation in results found by different groups. The torque depends on the magnetization direction in a way similar to that found for a simple Rashba model. Artificially turning off the exchange spin splitting and separately the spin-orbit coupling potential in the Pt shows that the primary source of the “fieldlike” torque is a proximate spin-orbit effect on the Co layer induced by the strong spin-orbit coupling in the Pt.

Current-induced torques and interfacial spin-orbit coupling

KAUST Repository

Haney, Paul M.

2013-12-19

In bilayer systems consisting of an ultrathin ferromagnetic layer adjacent to a metal with strong spin-orbit coupling, an applied in-plane current induces torques on the magnetization. The torques that arise from spin-orbit coupling are of particular interest. Here we use first-principles methods to calculate the current-induced torque in a Pt-Co bilayer to help determine the underlying mechanism. We focus exclusively on the analog to the Rashba torque, and do not consider the spin Hall effect. The details of the torque depend strongly on the layer thicknesses and the interface structure, providing an explanation for the wide variation in results found by different groups. The torque depends on the magnetization direction in a way similar to that found for a simple Rashba model. Artificially turning off the exchange spin splitting and separately the spin-orbit coupling potential in the Pt shows that the primary source of the “fieldlike” torque is a proximate spin-orbit effect on the Co layer induced by the strong spin-orbit coupling in the Pt.

Spin current

CERN Document Server

Valenzuela, Sergio O; Saitoh, Eiji; Kimura, Takashi

2017-01-01

Since the discovery of the giant magnetoresistance effect in magnetic multilayers in 1988, a new branch of physics and technology, called spin-electronics or spintronics, has emerged, where the flow of electrical charge as well as the flow of electron spin, the so-called “spin current,” are manipulated and controlled together. The physics of magnetism and the application of spin current have progressed in tandem with the nanofabrication technology of magnets and the engineering of interfaces and thin films. This book aims to provide an introduction and guide to the new physics and applications of spin current, with an emphasis on the interaction between spin and charge currents in magnetic nanostructures.

Role of polarizer-tilting-angle in zero-field spin-transfer nano-oscillators with perpendicular anisotropy

Energy Technology Data Exchange (ETDEWEB)

Gonzalez-Fuentes, C.; Gallardo, R. A., E-mail: rodolfo.gallardo@usm.cl; Landeros, P. [Departamento de Física, Universidad Técnica Federico Santa María, Avenida España 1680, 2390123 Valparaíso (Chile)

2015-10-05

An analytical model for studying the stability of a single domain ferromagnetic layer under the influence of a spin-polarized current is presented. The theory is applied to bias-field-free nano-oscillators with perpendicular anisotropy, which allows to obtain a polarizer-angle vs. current phase diagram that describes the stability of magnetic states. Explicit formulae for the critical current densities unveil the influence of the relative orientation between free and polarizer layers, allowing the emergence of precessional steady-states, and also the possibility to reduce the magnitude of the threshold current density to produce microwave oscillations. It is shown that oscillating steady-states arise in a broad angular region, and the dependence of their boundaries is fully specified by the model. The reliability of the analytical results has been corroborated by comparison to numerical calculations. Such structures are currently under intense research because of remarkable properties offering new prospects for microwave applications in communication technologies.

Bicuspid aortic valves: Diagnostic accuracy of standard axial 64-slice chest CT compared to aortic valve image plane ECG-gated cardiac CT

Energy Technology Data Exchange (ETDEWEB)

Murphy, David J., E-mail: david.murphy@st-vincents.ie [Department of Radiology, St Vincent' s University Hospital, Elm Park, Dublin 4 (Ireland); McEvoy, Sinead H., E-mail: s.mcevoy@st-vincents.ie [Department of Radiology, St Vincent' s University Hospital, Elm Park, Dublin 4 (Ireland); Iyengar, Sri, E-mail: sri.iyengar@nhs.net [Department of Radiology, Plymouth Hospitals NHS Trust, Plymouth Devon PL6 8DH (United Kingdom); Feuchtner, Gudrun, E-mail: Gudrun.Feuchtner@i-med.ac.at [Department of Radiology, Innsbruck Medical University, Anichstr. 35, A-6020 Innsbruck (Austria); Cury, Ricardo C., E-mail: r.cury@baptisthealth.net [Department of Radiology, Baptist Cardiac and Vascular Institute, 8900 North Kendall Drive, Miami, FL 33176 (United States); Roobottom, Carl, E-mail: carl.roobottom@nhs.net [Department of Radiology, Plymouth Hospitals NHS Trust, Plymouth Devon PL6 8DH (United Kingdom); Plymouth University Peninsula Schools of Medicine and Dentistry (United Kingdom); Baumueller, Stephan, E-mail: Hatem.Alkadhi@usz.ch [Institute for Diagnostic and Interventional Radiology, University Hospital Zurich, Raemistrasse 100, CH-8091 Zurich (Switzerland); Alkadhi, Hatem, E-mail: stephan.baumueller@usz.ch [Institute for Diagnostic and Interventional Radiology, University Hospital Zurich, Raemistrasse 100, CH-8091 Zurich (Switzerland); Dodd, Jonathan D., E-mail: jonniedodd@gmail.com [Department of Radiology, St Vincent' s University Hospital, Elm Park, Dublin 4 (Ireland)

2014-08-15

Objectives: To assess the diagnostic accuracy of standard axial 64-slice chest CT compared to aortic valve image plane ECG-gated cardiac CT for bicuspid aortic valves. Materials and methods: The standard axial chest CT scans of 20 patients with known bicuspid aortic valves were blindly, randomly analyzed for (i) the appearance of the valve cusps, (ii) the largest aortic sinus area, (iii) the longest aortic cusp length, (iv) the thickest aortic valve cusp and (v) valve calcification. A second blinded reader independently analyzed the appearance of the valve cusps. Forty-two age- and sex-matched patients with known tricuspid aortic valves were used as controls. Retrospectively ECG-gated cardiac CT multiphase reconstructions of the aortic valve were used as the gold-standard. Results: Fourteen (21%) scans were scored as unevaluable (7 bicuspid, 7 tricuspid). Of the remainder, there were 13 evaluable bicuspid valves, ten of which showed an aortic valve line sign, while the remaining three showed a normal Mercedes-Benz appearance owing to fused valve cusps. The 35 evaluable tricuspid aortic valves all showed a normal Mercedes-Benz appearance (P = 0.001). Kappa analysis = 0.62 indicating good interobserver agreement for the aortic valve cusp appearance. Aortic sinus areas, aortic cusp lengths and aortic cusp thicknesses of ≥3.8 cm{sup 2}, 3.2 cm and 1.6 mm respectively on standard axial chest CT best distinguished bicuspid from tricuspid aortic valves (P < 0.0001 for all). Of evaluable scans, the sensitivity, specificity, positive and negative predictive values of standard axial chest CT in diagnosing bicuspid aortic valves was 77% (CI 0.54–1.0), 100%, 100% and 70% respectively. Conclusion: The aortic valve is evaluable in approximately 80% of standard chest 64-slice CT scans. Bicuspid aortic valves may be diagnosed on evaluable scans with good diagnostic accuracy. An aortic valve line sign, enlarged aortic sinuses and elongated, thickened valve cusps are specific CT

Monolayer Boron Nitride Substrate Interactions with Graphene Under In-Plane and Perpendicular Strains: A First-Principles Study

Science.gov (United States)

Behzad, Somayeh

2018-04-01

Effects of strain on the electronic and optical properties of graphene on monolayer boron nitride (BN) substrate are investigated using first-principle calculations based on density functional theory. Strain-free graphene/BN has a small band gap of 97 meV at the K point. The magnitude of band gap increases with in-plane biaxial strain while it decreases with the perpendicular uniaxial strain. The ɛ2 (ω ) spectrum of graphene/BN bilayer for parallel polarization shows red and blue shifts by applying the in-plane tensile and compressive strains, respectively. Also the positions of peaks in the ɛ2 (ω ) spectrum are not significantly changed under perpendicular strain. The calculated results indicate that graphene on the BN substrate has great potential in microelectronic and optoelectronic applications.

Production, detection, storage and release of spin currents

Directory of Open Access Journals (Sweden)

Michele Cini

2015-03-01

Full Text Available Background: Quantum rings connected to ballistic circuits couple strongly to external magnetic fields if the connection is not symmetric. Moreover, properly connected rings can be used to pump currents in the wires giving raise to a number of interesting new phenomena. At half filling using a time-dependent magnetic field in the plane of the ring one can pump a pure spin current, excited by the the spin–orbit interaction in the ring.Results: Such a magnetic current is even under time reversal and produces an electric field instead of the usual magnetic field. Numerical simulations show that one can use magnetizable bodies as storage units to concentrate and save the magnetization in much the same way as capacitors operating with charge currents store electric charge. The polarization obtained in this way can then be used on command to produce spin currents in a wire. These currents show interesting oscillations while the storage units exchange their polarizations.Conclusion: The magnetic production of spin currents can be a useful alternative to optical excitation and electric field methods.

Spin wave propagation in perpendicularly magnetized nm-thick yttrium iron garnet films

Science.gov (United States)

Chen, Jilei; Heimbach, Florian; Liu, Tao; Yu, Haiming; Liu, Chuanpu; Chang, Houchen; Stückler, Tobias; Hu, Junfeng; Zeng, Lang; Zhang, Youguang; Liao, Zhimin; Yu, Dapeng; Zhao, Weisheng; Wu, Mingzhong

2018-03-01

Magnonics offers a new way for information transport that uses spin waves (SWs) and is free of charge currents. Unlike Damon-Eshbach SWs, the magneto-static forward volume SWs offer the reciprocity configuration suitable for SW logic devices with low power consumption. Here, we study forward volume SW propagation in yttrium iron garnet (YIG) thin films with an ultra-low damping constant α = 8 ×10-5 . We design different integrated microwave antenna with different k-vector excitation distributions on YIG thin films. Using a vector network analyzer, we measured SW transmission with the films magnetized in perpendicular orientation. Based on the experimental results, we extract the group velocity as well as the dispersion relation of SWs and directly compare the power efficiency of SW propagation in YIG using coplanar waveguide and micro stripline for SW excitation and detection.

The multi-step tunneling analogue of conductivity mismatch in organic spin valves

NARCIS (Netherlands)

Tran, T. Lan Ahn; Le, T.Q.; Sanderink, Johannes G.M.; van der Wiel, Wilfred Gerard; de Jong, Machiel Pieter

Carbon-based, molecular semiconductors offer several attractive attributes for spintronics, such as exceptionally weak spin-orbit coupling and compatibility with bottom-up nanofabrication. In spite of the promising properties of organic spin valves, however, the physical mechanisms governing

Valley- and spin-switch effects in molybdenum disulfide superconducting spin valve

Science.gov (United States)

Majidi, Leyla; Asgari, Reza

2014-10-01

We propose a hole-doped molybdenum disulfide (MoS2) superconducting spin valve (F/S/F) hybrid structure in which the Andreev reflection process is suppressed for all incoming waves with a determined range of the chemical potential in ferromagnetic (F) region and the cross-conductance in the right F region depends crucially on the configuration of magnetizations in the two F regions. Using the scattering formalism, we find that the transport is mediated purely by elastic electron cotunneling (CT) process in a parallel configuration and changes to the pure crossed Andreev reflection (CAR) process in the low-energy regime, without fixing of a unique parameter, by reversing the direction of magnetization in the right F region. This suggests both valley- and spin-switch effects between the perfect elastic CT and perfect CAR processes and makes the nonlocal charge current to be fully valley- and spin-polarized inside the right F region where the type of the polarizations can be changed by reversing the magnetization direction in the right F region. We further demonstrate that the presence of the strong spin-orbit interaction λ and an additional topological term (β ) in the Hamiltonian of MoS2 result in an enhancement of the charge conductance of the CT and CAR processes and make them to be present for long lengths of the superconducting region. Besides, we find that the thermal conductance of the structure with a small length of the highly doped superconducting region exhibits linear dependence on the temperature at low temperatures, whereas it enhances exponentially at higher temperatures. In particular, we demonstrate that the thermal conductance versus the strength of the exchange field (h ) in F region displays a maximum value at h <λ , which moves towards larger exchange fields by increasing the temperature.

Evolution from the coplanar to the perpendicular plane geometry of helium (e,2e) differential cross sections symmetric in scattering angle and energy

International Nuclear Information System (INIS)

Murray, A.J.; Read, F.H.

1993-01-01

Experimentally determined differential cross sections are presented for the (e,2e) process in helium, in which the two outgoing electrons have the same energy and the same scattering angle with respect to the incident beam. At four incident energies from 20 to 50 eV above the ionization threshold the detection plane defined by the outgoing electrons was varied from being coplanar with the incident beam to being perpendicular to the beam. The differential cross section evolves from a two-peak structure in coplanar geometry to a three-peak structure in the perpendicular plane. At the lowest energy the forward-scattering coplanar peak is smaller than the backscatter peak, in contrast to the results at higher energies. A deep minimum is seen at an intermediate plane angle of 67.5 degree, this minimum being deepest at 40 eV above the ionization threshold. The results are normalized to an absolute scale using previous coplanar measurements as discussed in the text. The spectrometer used to collect these results is fully computer controlled and real-time computer optimized

Liquid-metal flow through a thin-walled elbow in a plane perpendicular to a uniform magnetic field

International Nuclear Information System (INIS)

Walker, J.S.

1986-04-01

This paper presents analytical solutions for the liquid-metal flow through two straight pipes connected by a smooth elbow with the same inside radius. The pipes and the elbow lie in a plane which is perpendicular to a uniform, applied magnetic field. The strength of the magnetic field is assumed to be sufficiently strong that inertial and viscous effects are negligible. This assumption is appropriate for the liquid-lithium flow in the blanket of a magnetic confinement fusion reactor, such as a tokamak. The pipes and the elbow have thin metal walls

Novel room-temperature spin-valve-like magnetoresistance in magnetically coupled nano-column Fe3O4/Ni heterostructure.

Science.gov (United States)

Xiao, Wen; Song, Wendong; Herng, Tun Seng; Qin, Qing; Yang, Yong; Zheng, Ming; Hong, Xiaoliang; Feng, Yuan Ping; Ding, Jun

2016-08-25

Herein, we design a room-temperature spin-valve-like magnetoresistance in a nano-column Fe3O4/Ni heterostructure without using a non-magnetic spacer or pinning layer. An Fe3O4 nano-column film is self-assembled on a Ni underlayer by the thermal decomposition method. The wet-chemical self-assembly is facile, economical and scalable. The magnetoresistance (MR) response of the Ni underlayer in the heterostructure under positive and negative out-of-plane magnetic fields differ by ∼0.25 at room temperature and ∼0.43 at 100 K. We attribute the spin-valve-like magnetoresistance to the unidirectional magnetic anisotropy of the Ni underlayer when being magnetically coupled by the Fe3O4 nano-column film. The out-of-plane negative-field magnetization is higher than the positive-field magnetization, affirming the unidirectional magnetic anisotropy of the Fe3O4/Ni heterostructure. Temperature-dependent magnetic and resistivity studies illustrate a close correlation between the magnetization transition of Fe3O4 and resistivity transition of Ni and prove a magnetic coupling between the Fe3O4 and Ni. First-principles calculations reveal that the Fe3O4/Ni model under a negative magnetic field is energetically more stable than that under a positive magnetic field. Furthermore, partial density of states (PDOS) analysis demonstrates the unidirectional magnetic anisotropy of the Ni 3d orbital. This is induced by the strong ferromagnetic coupling between Fe3O4 and Ni via oxygen-mediated Fe 3d-O 2p-Ni 3d hybridizations.

Ultra-fast magnetization reversal in magnetic nano-pillars by spin-polarized current

Energy Technology Data Exchange (ETDEWEB)

Devolder, T. [Institut d' Electronique Fondamentale, UMR 8622 CNRS, Universite Paris Sud, Ba-circumflex timent 220, 91405 Orsay (France)]. E-mail: thibaut.devolder@ief.u-psud.fr; Tulapurkar, A. [NanoElectronics Research Institute, National Institute of Advanced Industrial Science and Technology, Tsukuba 305-8568 (Japan); CREST, Japan Science and Technology Corporation, 4-1-8 Honcho, Kawaguchi 332-0012 (Japan); Yagami, K. [SSNC, Semiconductor Technology Development Group, SONY Corporation, Atsugi, Kanagawa 243-0014 (Japan); Crozat, P. [Institut d' Electronique Fondamentale, UMR 8622 CNRS, Universite Paris Sud, Ba-circumflex timent 220, 91405 Orsay (France); Chappert, C. [Institut d' Electronique Fondamentale, UMR 8622 CNRS, Universite Paris Sud, Ba-circumflex timent 220, 91405 Orsay (France); Fukushima, A. [NanoElectronics Research Institute, National Institute of Advanced Industrial Science and Technology, Tsukuba 305-8568 (Japan); CREST, Japan Science and Technology Corporation, 4-1-8 Honcho, Kawaguchi 332-0012 (Japan); Suzuki, Y. [NanoElectronics Research Institute, National Institute of Advanced Industrial Science and Technology, Tsukuba 305-8568 (Japan); CREST, Japan Science and Technology Corporation, 4-1-8 Honcho, Kawaguchi 332-0012 (Japan)

2005-02-01

We study the speed limitations of the magnetization switching resulting from spin transfer in pillar-shaped CoFe/Cu/CoFe spin valves. The quasi-static critical currents are Ic-=-2mA for the antiparallel (AP) to parallel (P) configuration and Ic+=+4.6mA for the P to AP transition. Current pulses of duration down to 100ps and amplitude of 4I{sub c} trigger switching at 300K. The switching is probabilistic for lower current pulses. The P to AP transition speed is not much temperature dependant from 50 to 300K. In contrast, the AP to P transition is thermally inhibited and is much faster at 150K than at 300K. This thermal inhibition highlights the importance of the macrospin coherency and of the thermally excited spin waves with finite wave vector parallel to the magnetization. Our results validate spin-transfer switching for fast memory applications.

Ultra-fast magnetization reversal in magnetic nano-pillars by spin-polarized current

International Nuclear Information System (INIS)

Devolder, T.; Tulapurkar, A.; Yagami, K.; Crozat, P.; Chappert, C.; Fukushima, A.; Suzuki, Y.

2005-01-01

We study the speed limitations of the magnetization switching resulting from spin transfer in pillar-shaped CoFe/Cu/CoFe spin valves. The quasi-static critical currents are Ic-=-2mA for the antiparallel (AP) to parallel (P) configuration and Ic+=+4.6mA for the P to AP transition. Current pulses of duration down to 100ps and amplitude of 4I c trigger switching at 300K. The switching is probabilistic for lower current pulses. The P to AP transition speed is not much temperature dependant from 50 to 300K. In contrast, the AP to P transition is thermally inhibited and is much faster at 150K than at 300K. This thermal inhibition highlights the importance of the macrospin coherency and of the thermally excited spin waves with finite wave vector parallel to the magnetization. Our results validate spin-transfer switching for fast memory applications

Low energy (e,2e) studies of the noble gases in the perpendicular plane

OpenAIRE

Nixon , Kate L; Murray , Andrew James; Kaiser , Christian

2010-01-01

Abstract Detailed (e, 2e) studies of the electron impact ionization of the noble gases helium, neon, argon, krypton and xenon have been carried out from near threshold to intermediate energies, where the outgoing electrons carry equal energy from the interaction. The experiments were conducted in the perpendicular plane, where the outgoing electrons are both detected orthogonal to the incident electron beam. For electrons to emerge in this geometry they must undergo multiple scattering, in...

Magneto-resistive and spin valve heads fundamentals and applications

CERN Document Server

Mallinson, John C

2002-01-01

This book is aims to be a comprehensive source on the physics and engineering of magneto-resistive heads. Most of the material is presented in a nonmathematical manner to make it more digestible for researchers, students, developers, and engineers.In addition to revising and updating material available in the first edition, Mallinson has added nine new chapters dealing with various aspects concerning spin valves, the electron spin tunneling effect, the electrostatic discharge effects, read amplifiers, and signal-to-noise ratios, making this a completely up-to-date reference.Th

Zero-field spin transfer oscillators based on magnetic tunnel junction having perpendicular polarizer and planar free layer

Directory of Open Access Journals (Sweden)

Bin Fang

2016-12-01

Full Text Available We experimentally studied spin-transfer-torque induced magnetization oscillations in an asymmetric MgO-based magnetic tunnel junction device consisting of an in-plane magnetized free layer and an out-of-plane magnetized polarizer. A steady auto-oscillation was achieved at zero magnetic field and room temperature, with an oscillation frequency that was strongly dependent on bias currents, with a large frequency tunability of 1.39 GHz/mA. Our results suggest that this new structure has a high potential for new microwave device designs.

Manipulation of perpendicular magnetic anisotropy of single Fe atom adsorbed graphene via MgO(1 1 1) substrate

Science.gov (United States)

Fu, Mingming; Tang, Weiqing; Wu, Yaping; Ke, Congming; Guo, Fei; Zhang, Chunmiao; Yang, Weihuang; Wu, Zhiming; Kang, Junyong

2018-05-01

Perpendicular magnetic anisotropy is significantly important for realizing a long-term retention of information for spintronics devices. Inspired by 2D graphene with its high charge carrier mobility and long spin diffusion length, we report a first-principles design framework on perpendicular magnetic anisotropy engineering of a Fe atom adsorbed graphene by employing a O-terminated MgO (1 1 1) substrate. Determined by the adsorption sites of the Fe atom, a tunable magnetic anisotropy is realized in Fe/graphene/MgO (1 1 1) structure, with the magnetic anisotropy energy of  ‑0.48 meV and 0.23 meV, respectively, corresponding to the in-plane and out of plane easy magnetizations. Total density of states suggest a half-metallicity with a 100% spin polarization in the system. Decomposed densities of Fe-3d states reveal the orbital contributions to the magnetic anisotropy for different Fe adsorption sites. Bonding interaction and charge redistribution regulated by MgO substrate are found responsible for the novel perpendicular magnetic anisotropy engineering in the system. The effective manipulation of perpendicular magnetic anisotropy in present work offers some references for the design and construction of 2D spintronics devices.

Modulation of spin-orbit torque efficiency by thickness control of heavy metal layers in Co/Pt multilayers

Energy Technology Data Exchange (ETDEWEB)

Sethi, P.; Krishnia, S.; Li, S.H.; Lew, W.S., E-mail: wensiang@ntu.edu.sg

2017-03-15

We investigate and quantify spin-orbit torque (SOT) strength by current induced effective in-plane magnetic fields and spin Hall angle (SHA) using AC harmonic Hall voltage measurements techniques on Ta/Pt/Co/Pt/Co/Ta thin film structures. The proposed Co/Pt thin film double stack gives property enhancement on thermal stability and perpendicular magnetization anisotropy strength over the single stack Pt/Co/Ta. In the proposed Co/Pt double stack we observed that increasing the Ta capping thickness to three times enhances the SHA in similar order, consistent with larger spin injection efficiency. Doubling the Pt spacer layer thickness reduces the SHA by nearly 1.4 times, due to partial cancellation of SOT by bottom layer Pt, negating the increase from the top Co/Pt interface. The in-plane current threshold for magnetization switching is lower with the increase of the SHA.

Probing spin-polarized edge state superconductivity by Andreev reflection in in-plane magnetic fields

Energy Technology Data Exchange (ETDEWEB)

Reinthaler, Rolf W.; Tkachov, Grigory; Hankiewicz, Ewelina M. [Faculty of Physics and Astrophysics, University of Wuerzburg, Wuerzburg (Germany)

2015-07-01

Finding signatures of unconventional superconductivity in Quantum Spin Hall systems is one of the challenges of solid state physics. Here we induce superconductivity in a 3D topological insulator thin film to cause the formation of helical edge states, which are protected against backscattering even in finite magnetic fields. Above a critical in-plane magnetic field, which is much smaller than the critical field of typical superconductors, the quasi-particle gap closes, giving rise to energy-dependent spin polarization. In this regime the spin-polarized edge state superconductivity can be detected by Andreev reflection. We propose measurement setups to experimentally observe the spin-dependent excess current and dI/dV characteristics.

Exchange-Dominated Pure Spin Current Transport in Alq3 Molecules.

Science.gov (United States)

Jiang, S W; Liu, S; Wang, P; Luan, Z Z; Tao, X D; Ding, H F; Wu, D

2015-08-21

We address the controversy over the spin transport mechanism in Alq3 utilizing spin pumping in the Y3Fe5O12/Alq3/Pd system. An unusual angular dependence of the inverse spin Hall effect is found. It, however, disappears when the microwave magnetic field is fully in the sample plane, excluding the presence of the Hanle effect. Together with the quantitative temperature-dependent measurements, these results provide compelling evidence that the pure spin current transport in Alq3 is dominated by the exchange-mediated mechanism.

Contact induced spin relaxation in graphene spin valves with Al2O3 and MgO tunnel barriers

Directory of Open Access Journals (Sweden)

Walid Amamou

2016-03-01

Full Text Available We investigate spin relaxation in graphene by systematically comparing the roles of spin absorption, other contact-induced effects (e.g., fringe fields, and bulk spin relaxation for graphene spin valves with MgO barriers, Al2O3 barriers, and transparent contacts. We obtain effective spin lifetimes by fitting the Hanle spin precession data with two models that include or exclude the effect of spin absorption. Results indicate that additional contact-induced spin relaxation other than spin absorption dominates the contact effect. For tunneling contacts, we find reasonable agreement between the two models with median discrepancy of ∼20% for MgO and ∼10% for Al2O3.

Micromagnetic study of skyrmion stability in confined magnetic structures with perpendicular anisotropy

Science.gov (United States)

Novak, R. L.; Garcia, F.; Novais, E. R. P.; Sinnecker, J. P.; Guimarães, A. P.

2018-04-01

Skyrmions are emerging topological spin structures that are potentially revolutionary for future data storage and spintronics applications. The existence and stability of skyrmions in magnetic materials is usually associated to the presence of the Dzyaloshinskii-Moriya interaction (DMI) in bulk magnets or in magnetic thin films lacking inversion symmetry. While some methods have already been proposed to generate isolated skyrmions in thin films with DMI, a thorough study of the conditions under which the skyrmions will remain stable in order to be manipulated in an integrated spintronic device are still an open problem. The stability of such structures is believed to be a result of ideal combinations of perpendicular magnetic anisotropy (PMA), DMI and the interplay between geometry and magnetostatics. In the present work we show some micromagnetic results supporting previous experimental observations of magnetic skyrmions in spin-valve stacks with a wide range of DMI values. Using micromagnetic simulations of cobalt-based disks, we obtain the magnetic ground state configuration for several values of PMA, DMI and geometric parameters. Skyrmion numbers, corresponding to the topological charge, are calculated in all cases and confirm the occurrence of isolated, stable, axially symmetric skyrmions for several combinations of DMI and anisotropy constant. The stability of the skyrmions in disks is then investigated under magnetic field and spin-polarized current, in finite temperature, highlighting the limits of applicability of these spin textures in spintronic devices.

Electric field-induced magnetoresistance in spin-valve/piezoelectric multiferroic laminates for low-power spintronics

International Nuclear Information System (INIS)

Huong Giang, D.T.; Thuc, V.N.; Duc, N.H.

2012-01-01

Electric field-induced magnetic anisotropy has been realized in the spin-valve-based {Ni 80 Fe 20 /Cu/Fe 50 Co 50 /IrMn}/piezoelectric multiferroic laminates. In this system, electric-field control of magnetization is accomplished by strain mediated magnetoelectric coupling. Practically, the magnetization in the magnetostrictive FeCo layer of the spin-valve structure rotates under an effective compressive stress caused by the inverse piezoelectric effect in external electrical fields. This phenomenon is evidenced by the magnetization and magnetoresistance changes under the electrical field applied across the piezoelectric layer. The result shows great potential for advanced low-power spintronic devices. - Highlights: ► Investigate electric field-induced magnetic anisotropy in spin-valve/piezoelectric. ► Magnetization, magnetoresistance changes under electric field across piezoelectric. ► Magnetization in magnetostrictive FeCo-layer rotates under a compressive stress. ► This advance shows great implications for low-power electronics and spintronics.

Three-Dimensional Interaction of a Large Number of Dense DEP Particles on a Plane Perpendicular to an AC Electrical Field

Directory of Open Access Journals (Sweden)

Chuanchuan Xie

2017-01-01

Full Text Available The interaction of dielectrophoresis (DEP particles in an electric field has been observed in many experiments, known as the “particle chains phenomenon”. However, the study in 3D models (spherical particles is rarely reported due to its complexity and significant computational cost. In this paper, we employed the iterative dipole moment (IDM method to study the 3D interaction of a large number of dense DEP particles randomly distributed on a plane perpendicular to a uniform alternating current (AC electric field in a bounded or unbounded space. The numerical results indicated that the particles cannot move out of the initial plane. The similar particles (either all positive or all negative DEP particles always repelled each other, and did not form a chain. The dissimilar particles (a mixture of positive and negative DEP particles always attracted each other, and formed particle chains consisting of alternately arranged positive and negative DEP particles. The particle chain patterns can be randomly multitudinous depending on the initial particle distribution, the electric properties of particles/fluid, the particle sizes and the number of particles. It is also found that the particle chain patterns can be effectively manipulated via tuning the frequency of the AC field and an almost uniform distribution of particles in a bounded plane chip can be achieved when all of the particles are similar, which may have potential applications in the particle manipulation of microfluidics.

Spin drift and spin diffusion currents in semiconductors

Energy Technology Data Exchange (ETDEWEB)

Idrish Miah, M [Nanoscale Science and Technology Centre and School of Biomolecular and Physical Sciences, Griffith University, Nathan, Brisbane, QLD 4111 (Australia)], E-mail: m.miah@griffith.edu.au

2008-09-15

On the basis of a spin drift-diffusion model, we show how the spin current is composed and find that spin drift and spin diffusion contribute additively to the spin current, where the spin diffusion current decreases with electric field while the spin drift current increases, demonstrating that the extension of the spin diffusion length by a strong field does not result in a significant increase in spin current in semiconductors owing to the competing effect of the electric field on diffusion. We also find that there is a spin drift-diffusion crossover field for a process in which the drift and diffusion contribute equally to the spin current, which suggests a possible method of identifying whether the process for a given electric field is in the spin drift or spin diffusion regime. Spin drift-diffusion crossover fields for GaAs are calculated and are found to be quite small. We derive the relations between intrinsic spin diffusion length and the spin drift-diffusion crossover field of a semiconductor for different electron statistical regimes. The findings resulting from this investigation might be important for semiconductor spintronics.

Spin drift and spin diffusion currents in semiconductors

Directory of Open Access Journals (Sweden)

M Idrish Miah

2008-01-01

Full Text Available On the basis of a spin drift-diffusion model, we show how the spin current is composed and find that spin drift and spin diffusion contribute additively to the spin current, where the spin diffusion current decreases with electric field while the spin drift current increases, demonstrating that the extension of the spin diffusion length by a strong field does not result in a significant increase in spin current in semiconductors owing to the competing effect of the electric field on diffusion. We also find that there is a spin drift-diffusion crossover field for a process in which the drift and diffusion contribute equally to the spin current, which suggests a possible method of identifying whether the process for a given electric field is in the spin drift or spin diffusion regime. Spin drift-diffusion crossover fields for GaAs are calculated and are found to be quite small. We derive the relations between intrinsic spin diffusion length and the spin drift-diffusion crossover field of a semiconductor for different electron statistical regimes. The findings resulting from this investigation might be important for semiconductor spintronics.

Spin drift and spin diffusion currents in semiconductors

International Nuclear Information System (INIS)

Idrish Miah, M

2008-01-01

On the basis of a spin drift-diffusion model, we show how the spin current is composed and find that spin drift and spin diffusion contribute additively to the spin current, where the spin diffusion current decreases with electric field while the spin drift current increases, demonstrating that the extension of the spin diffusion length by a strong field does not result in a significant increase in spin current in semiconductors owing to the competing effect of the electric field on diffusion. We also find that there is a spin drift-diffusion crossover field for a process in which the drift and diffusion contribute equally to the spin current, which suggests a possible method of identifying whether the process for a given electric field is in the spin drift or spin diffusion regime. Spin drift-diffusion crossover fields for GaAs are calculated and are found to be quite small. We derive the relations between intrinsic spin diffusion length and the spin drift-diffusion crossover field of a semiconductor for different electron statistical regimes. The findings resulting from this investigation might be important for semiconductor spintronics.

Giant tunneling electroresistance effect driven by an electrically controlled spin valve at a complex oxide interface.

Science.gov (United States)

Burton, J D; Tsymbal, E Y

2011-04-15

A giant tunneling electroresistance effect may be achieved in a ferroelectric tunnel junction by exploiting the magnetoelectric effect at the interface between the ferroelectric barrier and a magnetic La(1-x)Sr(x)MnO3 electrode. Using first-principles density-functional theory we demonstrate that a few magnetic monolayers of La(1-x)Sr(x)MnO3 near the interface act, in response to ferroelectric polarization reversal, as an atomic-scale spin valve by filtering spin-dependent current. This produces more than an order of magnitude change in conductance, and thus constitutes a giant resistive switching effect.

Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance.

Science.gov (United States)

Wang, Mengxing; Cai, Wenlong; Cao, Kaihua; Zhou, Jiaqi; Wrona, Jerzy; Peng, Shouzhong; Yang, Huaiwen; Wei, Jiaqi; Kang, Wang; Zhang, Youguang; Langer, Jürgen; Ocker, Berthold; Fert, Albert; Zhao, Weisheng

2018-02-14

Perpendicular magnetic tunnel junctions based on MgO/CoFeB structures are of particular interest for magnetic random-access memories because of their excellent thermal stability, scaling potential, and power dissipation. However, the major challenge of current-induced switching in the nanopillars with both a large tunnel magnetoresistance ratio and a low junction resistance is still to be met. Here, we report spin transfer torque switching in nano-scale perpendicular magnetic tunnel junctions with a magnetoresistance ratio up to 249% and a resistance area product as low as 7.0 Ω µm 2 , which consists of atom-thick W layers and double MgO/CoFeB interfaces. The efficient resonant tunnelling transmission induced by the atom-thick W layers could contribute to the larger magnetoresistance ratio than conventional structures with Ta layers, in addition to the robustness of W layers against high-temperature diffusion during annealing. The critical switching current density could be lower than 3.0 MA cm -2 for devices with a 45-nm radius.

Spin-current emission governed by nonlinear spin dynamics.

Science.gov (United States)

Tashiro, Takaharu; Matsuura, Saki; Nomura, Akiyo; Watanabe, Shun; Kang, Keehoon; Sirringhaus, Henning; Ando, Kazuya

2015-10-16

Coupling between conduction electrons and localized magnetization is responsible for a variety of phenomena in spintronic devices. This coupling enables to generate spin currents from dynamical magnetization. Due to the nonlinearity of magnetization dynamics, the spin-current emission through the dynamical spin-exchange coupling offers a route for nonlinear generation of spin currents. Here, we demonstrate spin-current emission governed by nonlinear magnetization dynamics in a metal/magnetic insulator bilayer. The spin-current emission from the magnetic insulator is probed by the inverse spin Hall effect, which demonstrates nontrivial temperature and excitation power dependences of the voltage generation. The experimental results reveal that nonlinear magnetization dynamics and enhanced spin-current emission due to magnon scatterings are triggered by decreasing temperature. This result illustrates the crucial role of the nonlinear magnon interactions in the spin-current emission driven by dynamical magnetization, or nonequilibrium magnons, from magnetic insulators.

Perpendicular magnetic anisotropy in CoXPd100-X alloys for magnetic tunnel junctions

Science.gov (United States)

Clark, B. D.; Natarajarathinam, A.; Tadisina, Z. R.; Chen, P. J.; Shull, R. D.; Gupta, S.

2017-08-01

CoFeB/MgO-based perpendicular magnetic tunnel junctions (p-MTJ's) with high anisotropy and low damping are critical for spin-torque transfer random access memory (STT-RAM). Most schemes of making the pinned CoFeB fully perpendicular require ferrimagnets with high damping constants, a high temperature-grown L10 alloy, or an overly complex multilayered synthetic antiferromagnet (SyAF). We report a compositional study of perpendicular CoxPd alloy-pinned Co20Fe60B20/MgO based MTJ stacks, grown at moderate temperatures in a planetary deposition system. The perpendicular anisotropy of the CoxPd alloy films can be tuned based on the layer thickness and composition. The films were characterized by alternating gradient magnetometry (AGM), energy-dispersive X-rays (EDX), and X-ray diffraction (XRD). Current-in-plane tunneling (CIPT) measurements have also been performed on the compositionally varied CoxPd MTJ stacks. The CoxPd alloy becomes fully perpendicular at approximately x = 30% (atomic fraction) Co. Full-film MTJ stacks of Si/SiO2/MgO (13)/CoXPd100-x (50)/Ta (0.3)/CoFeB (1)/MgO (1.6)/CoFeB (1)/Ta (5)/Ru (10), with the numbers enclosed in parentheses being the layer thicknesses in nm, were sputtered onto thermally oxidized silicon substrates and in-situ lamp annealed at 400 °C for 5 min. CIPT measurements indicate that the highest TMR is observed for the CoPd composition with the highest perpendicular magnetic anisotropy.

Magnetic droplets in nano-contact spin-torque oscillators with perpendicular magnetic anisotropy

Science.gov (United States)

Åkerman, Johan

2013-03-01

The theoretical prediction, by Ivanov and Kosevich, of ``magnon drop'' solitons in thin films with perpendicular magnetic anisotropy (PMA) and zero damping, dates back to the 1970s. More recently, Hoefer, Silva and Keller, demonstrated analytically and numerically that related ``magnetic droplet'' solitons should be possible to excite in nano-contact spin-torque oscillators (NC-STOs) based on PMA materials, where spin transfer torque locally realizes the zero-damping condition required in. In my talk, I will present the first experimental demonstration of such magnetic droplets, realized using 50-100 nm diameter nano-contacts (NCs) fabricated on top of orthogonal GMR stacks of Co8/Cu/Co0.3[Ni0.8/Co0.4]x4 (thicknesses in nm). The nucleation of a magnetic droplet manifests itself as a dramatic 10 GHz drop in microwave signal frequency at a drive-current dependent critical perpendicular field of the order of 0.5 - 1 T. The drop in frequency is accompanied by a simultaneous sharp resistance increase of the device and a sign change of its magnetoresistance, directly indicating the existence of a reversed magnetization in a region of the [Co/Ni] free layer underneath the NC. As predicted by numerical simulations the droplet exhibits rich magnetodynamic properties, experimentally observed as auto-modulation at approximately 1 GHz and sometimes sidebands at 1/2 and 3/2 of the fundamental droplet frequency. The 1 GHz modulation can be shown numerically to be related to the drift instability of the droplet, albeit with enough restoring force to make the droplet perform a periodic motion instead of leaving the NC region. The sidebands at 1/2 and 3/2 the droplet frequency are related to eigenmodes of the droplet perimeter. Magnetic droplet nucleation is found to be robust and reproducible over a wide number of NC-STOs with different NC sizes, making this new nanomagnetic object as fundamental and potentially useful to nanomagnetism as e.g. domain walls and vortices. Support

Synchronization of spin torque nano-oscillators through dipolar interactions

International Nuclear Information System (INIS)

Chen, Hao-Hsuan; Wu, Jong-Ching; Horng, Lance; Lee, Ching-Ming; Chang, Ching-Ray; Chang, Jui-Hang

2014-01-01

In an array of spin-torque nano-oscillators (STNOs) that combine a perpendicular polarized fixed layer with strong in-plane anisotropy in the free layers, magnetic dipolar interactions can effectively phase-lock the array, thus further enhancing the power of the output microwave signals. We perform a qualitative analysis of the synchronization of an array based on the Landau-Lifshitz-Gilbert equation, with a spin-transfer torque that assumes strong in-plane anisotropy. Finally, we present the numerical results for four coupled STNOs to provide further evidence for the proposed theory

Synchronization of spin torque nano-oscillators through dipolar interactions

Energy Technology Data Exchange (ETDEWEB)

Chen, Hao-Hsuan, E-mail: d95222014@ntu.edu.tw; Wu, Jong-Ching, E-mail: phjcwu@cc.ncue.edu.tw; Horng, Lance [Department of Physics, National Changhua University of Education, Changhua 500, Taiwan (China); Lee, Ching-Ming [Graduate School of Materials Science, National Yunlin University of Science and Technology, Douliou, 64002, Taiwan (China); Chang, Ching-Ray, E-mail: crchang@phys.ntu.edu.tw; Chang, Jui-Hang [Department of Physics and Center for Quantum Sciences and Engineering, National Taiwan University, Taipei 10617, Taiwan (China)

2014-04-07

In an array of spin-torque nano-oscillators (STNOs) that combine a perpendicular polarized fixed layer with strong in-plane anisotropy in the free layers, magnetic dipolar interactions can effectively phase-lock the array, thus further enhancing the power of the output microwave signals. We perform a qualitative analysis of the synchronization of an array based on the Landau-Lifshitz-Gilbert equation, with a spin-transfer torque that assumes strong in-plane anisotropy. Finally, we present the numerical results for four coupled STNOs to provide further evidence for the proposed theory.

Gate-tunable large magnetoresistance in an all-semiconductor spin valve device.

Science.gov (United States)

Oltscher, M; Eberle, F; Kuczmik, T; Bayer, A; Schuh, D; Bougeard, D; Ciorga, M; Weiss, D

2017-11-27

A large spin-dependent and electric field-tunable magnetoresistance of a two-dimensional electron system is a key ingredient for the realization of many novel concepts for spin-based electronic devices. The low magnetoresistance observed during the last few decades in devices with lateral semiconducting transport channels between ferromagnetic source and drain contacts has been the main obstacle for realizing spin field effect transistor proposals. Here, we show both a large two-terminal magnetoresistance in a lateral spin valve device with a two-dimensional channel, with up to 80% resistance change, and tunability of the magnetoresistance by an electric gate. The enhanced magnetoresistance is due to finite electric field effects at the contact interface, which boost spin-to-charge conversion. The gating scheme that we use is based on switching between uni- and bidirectional spin diffusion, without resorting to spin-orbit coupling. Therefore, it can also be employed in materials with low spin-orbit coupling.

Spin waves in two-dimensional ferromagnet with large easy-plane anisotropy

International Nuclear Information System (INIS)

Fridman, Yu.A.; Spirin, D.V.

2002-01-01

Spin waves in easy-plane two-dimensional ferromagnet when anisotropy is much stronger than exchange are investigated. The spectra of magnons, the spin-spin and quadrupolar correlation functions have been derived. It is shown that in such a system there exist spin waves at low temperatures. Some properties of the quadrupolar ordering in ferromagnets are discussed

Spin torque oscillator for microwave assisted magnetization reversal

Science.gov (United States)

Taniguchi, Tomohiro; Kubota, Hitoshi

2018-05-01

A theoretical study is given for the self-oscillation excited in a spin torque oscillator (STO) consisting of an in-plane magnetized free layer and a perpendicularly magnetized pinned layer in the presence of a perpendicular magnetic field. This type of STO is a potential candidate for a microwave source of microwave assisted magnetization reversal (MAMR). It is, however, found that the self-oscillation applicable to MAMR disappears when the perpendicular field is larger than a critical value, which is much smaller than a demagnetization field. This result provides a condition that the reversal field of a magnetic recording bit by MAMR in nanopillar structure should be smaller than the critical value. The analytical formulas of currents determining the critical field are obtained, which indicate that a material with a small damping is not preferable to acheive a wide range of the self-oscillation applicable to MAMR, although such a material is preferable from the viewpoint of the reduction of the power consumption.

Magnetic structure of the spin valve interface

International Nuclear Information System (INIS)

Nicholson, D.M.C.; Butler, W.H.; Zhang, X.; MacLaren, J.M.; Gurney, B.A.; Speriosu, V.S.

1994-01-01

Nonferromagnetic atoms present at Ni/Cu and Permalloy/Cu interfaces in sputtered spin valve magnetoresistive layered structures have been shown to cause reduced magnetoresistance. Here we show that a model in which the moments on the Ni atoms in the interfacial region of Ni/Cu are reduced substantially by interdiffusion with Cu is consistent with the experimental results. In contrast, we believe that moments persist at the permalloy/Cu interface, which first principle total energy calculations suggest will be disordered at finite temperatures. These reduced or disordered moments are expected to significantly reduce the GMR

T=0 phase diagram and nature of domains in ultrathin ferromagnetic films with perpendicular anisotropy

International Nuclear Information System (INIS)

Pighin, Santiago A.; Billoni, Orlando V.; Stariolo, Daniel A.; Cannas, Sergio A.

2010-01-01

We present the complete zero temperature phase diagram of a model for ultrathin films with perpendicular anisotropy. The whole parameter space of relevant coupling constants is studied in first order anisotropy approximation. Because the ground state is known to be formed by perpendicular stripes separated by Bloch walls, a standard variational approach is used, complemented with specially designed Monte Carlo simulations. We can distinguish four regimes according to the different nature of striped domains: a high anisotropy Ising regime with sharp domain walls, a saturated stripe regime with thicker walls inside which an in-plane component of the magnetization develops, a narrow canted-like regime, characterized by a sinusoidal variation of both the in-plane and the out of plane magnetization components, which upon further decrease of the anisotropy leads to an in-plane ferromagnetic state via a spin reorientation transition (SRT). The nature of domains and walls are described in some detail together with the variation of domain width with anisotropy, for any value of exchange and dipolar interactions. Our results, although strictly valid at T=0, can be valuable for interpreting data on the evolution of domain width at finite temperature, a still largely open problem.

Spin Current Noise of the Spin Seebeck Effect and Spin Pumping

Science.gov (United States)

Matsuo, M.; Ohnuma, Y.; Kato, T.; Maekawa, S.

2018-01-01

We theoretically investigate the fluctuation of a pure spin current induced by the spin Seebeck effect and spin pumping in a normal-metal-(NM-)ferromagnet(FM) bilayer system. Starting with a simple ferromagnet-insulator-(FI-)NM interface model with both spin-conserving and non-spin-conserving processes, we derive general expressions of the spin current and the spin-current noise at the interface within second-order perturbation of the FI-NM coupling strength, and estimate them for a yttrium-iron-garnet-platinum interface. We show that the spin-current noise can be used to determine the effective spin carried by a magnon modified by the non-spin-conserving process at the interface. In addition, we show that it provides information on the effective spin of a magnon, heating at the interface under spin pumping, and spin Hall angle of the NM.

Spin-wave resonances and surface spin pinning in Ga1-xMnxAs thin films

Science.gov (United States)

Bihler, C.; Schoch, W.; Limmer, W.; Goennenwein, S. T. B.; Brandt, M. S.

2009-01-01

We investigate the dependence of the spin-wave resonance (SWR) spectra of Ga0.95Mn0.05As thin films on the sample treatment. We find that for the external magnetic field perpendicular to the film plane, the SWR spectrum of the as-grown thin films and the changes upon etching and short-term hydrogenation can be quantitatively explained via a linear gradient in the uniaxial magnetic anisotropy field in growth direction. The model also qualitatively explains the SWR spectra observed for the in-plane easy-axis orientation of the external magnetic field. Furthermore, we observe a change in the effective surface spin pinning of the partially hydrogenated sample, which results from the tail in the hydrogen-diffusion profile. The latter leads to a rapidly changing hole concentration/magnetic anisotropy profile acting as a barrier for the spin-wave excitations. Therefore, short-term hydrogenation constitutes a simple method to efficiently manipulate the surface spin pinning.

A New Circuit Model for Spin-Torque Oscillator Including Perpendicular Torque of Magnetic Tunnel Junction

Directory of Open Access Journals (Sweden)

Hyein Lim

2013-01-01

Full Text Available Spin-torque oscillator (STO is a promising new technology for the future RF oscillators, which is based on the spin-transfer torque (STT effect in magnetic multilayered nanostructure. It is expected to provide a larger tunability, smaller size, lower power consumption, and higher level of integration than the semiconductor-based oscillators. In our previous work, a circuit-level model of the giant magnetoresistance (GMR STO was proposed. In this paper, we present a physics-based circuit-level model of the magnetic tunnel junction (MTJ-based STO. MTJ-STO model includes the effect of perpendicular torque that has been ignored in the GMR-STO model. The variations of three major characteristics, generation frequency, mean oscillation power, and generation linewidth of an MTJ-STO with respect to the amount of perpendicular torque, are investigated, and the results are applied to our model. The operation of the model was verified by HSPICE simulation, and the results show an excellent agreement with the experimental data. The results also prove that a full circuit-level simulation with MJT-STO devices can be made with our proposed model.

Interplay of Peltier and Seebeck Effects in Nanoscale Nonlocal Spin Valves

NARCIS (Netherlands)

Bakker, F. L.; Slachter, A.; Adam, J-P; van Wees, B. J.

2010-01-01

We have experimentally studied the role of thermoelectric effects in nanoscale nonlocal spin valve devices. A finite element thermoelectric model is developed to calculate the generated Seebeck voltages due to Peltier and Joule heating in the devices. By measuring the first, second, and third

Terahertz-Frequency Spin Hall Auto-oscillator Based on a Canted Antiferromagnet

Science.gov (United States)

Sulymenko, O. R.; Prokopenko, O. V.; Tiberkevich, V. S.; Slavin, A. N.; Ivanov, B. A.; Khymyn, R. S.

2017-12-01

We propose a design of a terahertz-frequency signal generator based on a layered structure consisting of a current-driven platinum (Pt) layer and a layer of an antiferromagnet (AFM) with easy-plane anisotropy, where the magnetization vectors of the AFM sublattices are canted inside the easy plane by the Dzyaloshinskii-Moriya interaction (DMI). The dc electric current flowing in the Pt layer creates due to the spin Hall effect, a perpendicular spin current that, being injected in the AFM layer, tilts the DMI-canted AFM sublattices out of the easy plane, thus exposing them to the action of a strong internal exchange magnetic field of the AFM. The sublattice magnetizations, along with the small net magnetization vector mDMI of the canted AFM, start to rotate about the hard anisotropy axis of the AFM with the terahertz frequency proportional to the injected spin current and the AFM exchange field. The rotation of the small net magnetization mDMI results in the terahertz-frequency dipolar radiation that can be directly received by an adjacent (e.g., dielectric) resonator. We demonstrate theoretically that the radiation frequencies in the range f =0.05 - 2 THz are possible at the experimentally reachable magnitudes of the driving current density, and we evaluate the power of the signal radiated into different types of resonators. This power increases with the increase of frequency f , and it can exceed 1 μ W at f ˜0.5 THz for a typical dielectric resonator of the electric permittivity ɛ ˜10 and a quality factor Q ˜750 .

Symmetry mismatch-driven perpendicular magnetic anisotropy for perovskite/brownmillerite heterostructures.

Science.gov (United States)

Zhang, Jing; Zhong, Zhicheng; Guan, Xiangxiang; Shen, Xi; Zhang, Jine; Han, Furong; Zhang, Hui; Zhang, Hongrui; Yan, Xi; Zhang, Qinghua; Gu, Lin; Hu, Fengxia; Yu, Richeng; Shen, Baogen; Sun, Jirong

2018-05-15

Grouping different transition metal oxides together by interface engineering is an important route toward emergent phenomenon. While most of the previous works focused on the interface effects in perovskite/perovskite heterostructures, here we reported on a symmetry mismatch-driven spin reorientation toward perpendicular magnetic anisotropy in perovskite/brownmillerite heterostructures, which is scarcely seen in tensile perovskite/perovskite heterostructures. We show that alternately stacking perovskite La 2/3 Sr 1/3 MnO 3 and brownmillerite LaCoO 2.5 causes a strong interface reconstruction due to symmetry discontinuity at interface: neighboring MnO 6 octahedra and CoO 4 tetrahedra at the perovskite/brownmillerite interface cooperatively relax in a manner that is unavailable for perovskite/perovskite interface, leading to distinct orbital reconstructions and thus the perpendicular magnetic anisotropy. Moreover, the perpendicular magnetic anisotropy is robust, with an anisotropy constant two orders of magnitude greater than the in-plane anisotropy of the perovskite/perovskite interface. The present work demonstrates the great potential of symmetry engineering in designing artificial materials on demand.

Ferromagnetic resonance study of the half-Heusler alloy NiMnSb. The benefit of using NiMnSb as a ferromagnetic layer in pseudo-spin-valve based spin-torque oscillators

Energy Technology Data Exchange (ETDEWEB)

Riegler, Andreas

2011-11-25

Since the discovery of spin torque in 1996, independently by Berger and Slonczewski, and given its potential impact on information storage and communication technologies, (e.g. through the possibility of switching the magnetic configuration of a bit by current instead of a magnetic field, or the realization of high frequency spin torque oscillators (STO)), this effect has been an important field of spintronics research. One aspect of this research focuses on ferromagnets with low damping. The lower the damping in a ferromagnet, the lower the critical current that is needed to induce switching of a spin valve or induce precession of its magnetization. In this thesis ferromagnetic resonance (FMR) studies of NiMnSb layers are presented along with experimental studies on various spin-torque (ST) devices using NiMnSb. NiMnSb, when crystallized in the half-Heusler structure, is a half-metal which is predicted to have 100% spin polarization, a consideration which further increases its potential as a candidate for memory devices based on the giant magnetoresistance (GMR) effect. The FMR measurements show an outstandingly low damping factor for NiMnSb, in low 10{sup -3} range. This is about a factor of two lower than permalloy and well comparable to lowest damping for iron grown by molecular beam epitaxy (MBE). According to theory the 100% spin polarization properties of the bulk disappear at interfaces where the break in translational symmetry causes the gap in the minority spin band to collapse but can remain in other crystal symmetries such as (111). Consequently NiMnSb layers on (111)(In,Ga)As buffer are characterized in respect of anisotropies and damping. The FMR measurements on these samples indicates a higher damping that for the 001 samples, and a thickness dependent uniaxial in-plane anisotropy. Investigations of the material for device use is pursued by considering sub-micrometer sized elements of NiMnSb on 001 substrates, which were fabricated by electron

Magnetotransport in spin-valve systems with amorphous magnetic and superconducting partial layers

International Nuclear Information System (INIS)

Steiner, Roland Johannes

2006-01-01

The first part of this work deals with the fabrication and characterisation of spin valves with an amorphous FeB layer acting as a weak ferromagnet embedded into the structure. In the second part of this work ferromagnet/superconductor hybrid structures are fabricated and the relevant magnetic field dependent transport phenomena are analyzed. The interlayer of a conventional spin valve was replaced by a superconducting niobium layer. Small applied fields close to the coercivity field of the involved ferromagnets - and thus far below the critical magnetic field of the superconductor - affected the critical temperature of the niobium layer. Measurements of the field dependent resistance and the critical temperature of a FM/SC/FMsystem showed a local maximum in the T c (H)- and the R(H)-curve. (orig.)

Nanostructures based on superconducting Nb and ferromagnetic CuNi alloy for elaboration of spin-valve core

International Nuclear Information System (INIS)

Morari, Roman

2013-01-01

The main goal of our research group is the elaboration of superconducting spin-switch (valve) based on Ferromagnetic/Superconductor/Ferromagnetic core. We could realize all building blocks necessary for the fabrication of the core structure of the superconducting spin valve, consisting of two mirror symmetric bilayers. In other words, the spin valve consists of a F/S * /F trilayer, which can be regarded as a package of a F/S and S/F bilayer so that S * =2S in the trilayer. For such a trilayer, the theory predicts that the critical temperature depends on the relative orientation of the magnetization of the ferromagnetic layers. To enable a reversal of one of the magnetizations of the layers with respect to the other by an external magnetic field, the coercive forces of the F layers have to be different due to either intrinsic properties or to an antiferromagnetic pinning layer delivering an exchange bias. The main points of our study are presented here. (author)

Interfacial tuning of perpendicular magnetic anisotropy and spin magnetic moment in CoFe/Pd multilayers

Energy Technology Data Exchange (ETDEWEB)

Ngo, D.-T., E-mail: ndthe82@gmail.com [Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576 (Singapore); Meng, Z.L. [Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576 (Singapore); Tahmasebi, T. [Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576 (Singapore); Data Storage Institute, A-STAR (Agency for Science Technology and Research), 5 Engineering Drive 1, Singapore 117608 (Singapore); Yu, X. [Singapore Synchrotron Light Source, National University of Singapore, 5 Research Link, Singapore 117603 (Singapore); Thoeng, E. [Singapore Synchrotron Light Source, National University of Singapore, 5 Research Link, Singapore 117603 (Singapore); Department of Physics, National University of Singapore, Singapore 117542 (Singapore); Yeo, L.H. [Department of Physics, National University of Singapore, Singapore 117542 (Singapore); Rusydi, A., E-mail: phyandri@nus.edu.sg [Singapore Synchrotron Light Source, National University of Singapore, 5 Research Link, Singapore 117603 (Singapore); Department of Physics, National University of Singapore, Singapore 117542 (Singapore); Han, G.C [Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576 (Singapore); Teo, K.-L., E-mail: eleteokl@nus.edu.sg [Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576 (Singapore)

2014-01-15

We report on a strong perpendicular magnetic anisotropy in [CoFe 0.4 nm/Pd t]{sub 6} (t=1.0–2.0 nm) multilayers fabricated by DC sputtering in an ultrahigh vacuum chamber. Saturation magnetization, M{sub s}, and uniaxial anisotropy, K{sub u}, of the multilayers decrease with increasing the spacing thickness; with a M{sub s} of 155 emu/cc and a K{sub u} of 1.14×10{sup 5} J/m{sup 3} at a spacing thickness of t=2 nm. X-ray absorption spectroscopy and X-ray magnetic circular dichroism measurements reveal that spin and orbital magnetic moments of Co and Fe in CoFe film decrease as a function of Pd thickness, indicating the major contribution of surface/interfacial magnetism to the magnetic properties of the film. - Highlights: • Strong perpendicular magnetic anisotropy essentially contributed by interfacial anisotropy. • Controllably magnetic properties with low M{sub s}, high K{sub u}, high P. • Interfacial magnetic moments modified by CoFe/Pd interfaces with strong spin–orbit coupling. • Narrow Bloch walls with Néel caps. • Superior magnetic characteristics for spin-torque applications.

Magnetoresistance in hybrid organic spin valves at the onset of multiple-step tunneling

NARCIS (Netherlands)

Schoonus, J.J.H.M.; Lumens, P.G.E.; Wagemans, W.; Kohlhepp, J.T.; Bobbert, P.A.; Swagten, H.J.M.; Koopmans, B.

2009-01-01

By combining experiments with simple model calculations, we obtain new insight in spin transport through hybrid, CoFeB/Al2O3(1.5nm)/tris(8- hydroxyquinoline)aluminium (Alq3)/Co spin valves. We have measured the characteristic changes in the I-V behavior as well as the intrinsic loss of

State diagram of a perpendicular magnetic tunnel junction driven by spin transfer torque: A power dissipation approach

Energy Technology Data Exchange (ETDEWEB)

Lavanant, M. [Institut Jean Lamour, UMR CNRS 7198 – Université de Lorraine, Nancy (France); Department of Physics, New York University, New York, NY 10003 (United States); Petit-Watelot, S. [Institut Jean Lamour, UMR CNRS 7198 – Université de Lorraine, Nancy (France); Kent, A.D. [Department of Physics, New York University, New York, NY 10003 (United States); Mangin, S., E-mail: stephane.mangin@univ-lorraine.fr [Institut Jean Lamour, UMR CNRS 7198 – Université de Lorraine, Nancy (France)

2017-04-15

The state diagram of a magnetic tunnel junction with perpendicularly magnetized electrodes in the presence of spin-transfer torques is computed in a macrospin approximation using a power dissipation model. Starting from the macrospin's energy we determine the stability of energy extremum in terms of power received and dissipated, allowing the consideration of non-conservative torques associated with spin transfer and damping. The results are shown to be in agreement with those obtained by direct integration of the Landau-Lifshitz-Gilbert-Slonczewski equation. However, the power dissipation model approach is faster and shows the reason certain magnetic states are stable, such as states that are energy maxima but are stabilized by spin transfer torque. Breaking the axial system, such as by a tilted applied field or tilted anisotropy, is shown to dramatically affect the state diagrams. Finally, the influence of a higher order uniaxial anisotropy that can stabilize a canted magnetization state is considered and the results are compared to experimental data. - Highlights: • Methods to compute state Diagram (Voltage Versus Field) for perpendicular Magnetic Tunnel Junctions. • Comparison between the conventional LLG model and a model based on Power dissipation to study magnetization reversal in magnetic tunnel junction.

Stretchable Spin Valve with Stable Magnetic Field Sensitivity by Ribbon-Patterned Periodic Wrinkles.

Science.gov (United States)

Li, Huihui; Zhan, Qingfeng; Liu, Yiwei; Liu, Luping; Yang, Huali; Zuo, Zhenghu; Shang, Tian; Wang, Baomin; Li, Run-Wei

2016-04-26

A strain-relief structure by combining the strain-engineered periodic wrinkles and the parallel ribbons was employed to fabricate flexible dual spin valves onto PDMS substrates in a direct sputtering method. The strain-relief structure can accommodate the biaxial strain accompanying with stretching operation (the uniaxial applied tensile strain and the induced transverse compressive strain due to the Poisson effect), thus significantly reducing the influence of the residual strain on the giant magnetoresistance (GMR) performance. The fabricated GMR dual spin-valve sensor exhibits the nearly unchanged MR ratio of 9.9%, magnetic field sensitivity up to 0.69%/Oe, and zero-field resistance in a wide range of stretching strain, making it promising for applications on a conformal shape or a movement part.

Perpendicular Magnetic Anisotropy in Heusler Alloy Films and Their Magnetoresistive Junctions

Directory of Open Access Journals (Sweden)

Atsufumi Hirohata

2018-01-01

Full Text Available For the sustainable development of spintronic devices, a half-metallic ferromagnetic film needs to be developed as a spin source with exhibiting 100% spin polarisation at its Fermi level at room temperature. One of the most promising candidates for such a film is a Heusler-alloy film, which has already been proven to achieve the half-metallicity in the bulk region of the film. The Heusler alloys have predominantly cubic crystalline structures with small magnetocrystalline anisotropy. In order to use these alloys in perpendicularly magnetised devices, which are advantageous over in-plane devices due to their scalability, lattice distortion is required by introducing atomic substitution and interfacial lattice mismatch. In this review, recent development in perpendicularly-magnetised Heusler-alloy films is overviewed and their magnetoresistive junctions are discussed. Especially, focus is given to binary Heusler alloys by replacing the second element in the ternary Heusler alloys with the third one, e.g., MnGa and MnGe, and to interfacially-induced anisotropy by attaching oxides and metals with different lattice constants to the Heusler alloys. These alloys can improve the performance of spintronic devices with higher recording capacity.

Amplification of perpendicular and parallel magnetic fields by cosmic ray currents

Science.gov (United States)

Matthews, J. H.; Bell, A. R.; Blundell, K. M.; Araudo, A. T.

2017-08-01

Cosmic ray (CR) currents through magnetized plasma drive strong instabilities producing amplification of the magnetic field. This amplification helps explain the CR energy spectrum as well as observations of supernova remnants and radio galaxy hotspots. Using magnetohydrodynamic simulations, we study the behaviour of the non-resonant hybrid (NRH) instability (also known as the Bell instability) in the case of CR currents perpendicular and parallel to the initial magnetic field. We demonstrate that extending simulations of the perpendicular case to 3D reveals a different character to the turbulence from that observed in 2D. Despite these differences, in 3D the perpendicular NRH instability still grows exponentially far into the non-linear regime with a similar growth rate to both the 2D perpendicular and 3D parallel situations. We introduce some simple analytical models to elucidate the physical behaviour, using them to demonstrate that the transition to the non-linear regime is governed by the growth of thermal pressure inside dense filaments at the edges of the expanding loops. We discuss our results in the context of supernova remnants and jets in radio galaxies. Our work shows that the NRH instability can amplify magnetic fields to many times their initial value in parallel and perpendicular shocks.

Nonlinear spin current generation in noncentrosymmetric spin-orbit coupled systems

Science.gov (United States)

Hamamoto, Keita; Ezawa, Motohiko; Kim, Kun Woo; Morimoto, Takahiro; Nagaosa, Naoto

2017-06-01

Spin current plays a central role in spintronics. In particular, finding more efficient ways to generate spin current has been an important issue and has been studied actively. For example, representative methods of spin-current generation include spin-polarized current injections from ferromagnetic metals, the spin Hall effect, and the spin battery. Here, we theoretically propose a mechanism of spin-current generation based on nonlinear phenomena. By using Boltzmann transport theory, we show that a simple application of the electric field E induces spin current proportional to E2 in noncentrosymmetric spin-orbit coupled systems. We demonstrate that the nonlinear spin current of the proposed mechanism is supported in the surface state of three-dimensional topological insulators and two-dimensional semiconductors with the Rashba and/or Dresselhaus interaction. In the latter case, the angular dependence of the nonlinear spin current can be manipulated by the direction of the electric field and by the ratio of the Rashba and Dresselhaus interactions. We find that the magnitude of the spin current largely exceeds those in the previous methods for a reasonable magnitude of the electric field. Furthermore, we show that application of ac electric fields (e.g., terahertz light) leads to the rectifying effect of the spin current, where dc spin current is generated. These findings will pave a route to manipulate the spin current in noncentrosymmetric crystals.

Domain wall motion in ferromagnetic systems with perpendicular magnetization

International Nuclear Information System (INIS)

Szambolics, H.; Toussaint, J.-Ch.; Marty, A.; Miron, I.M.; Buda-Prejbeanu, L.D.

2009-01-01

Although we lack clear experimental evidence, apparently out-of-plane magnetized systems are better suited for spintronic applications than the in-plane magnetized ones, mainly due to the smaller current densities required for achieving domain wall motion. [Co/Pt] multilayers belong to the first category of materials, the out-of-plane magnetization orientation arising from the strong perpendicular magnetocrystalline anisotropy. If the magnetization arranges itself out-of-plane narrow Bloch walls occur. In the present paper, both field and current-driven domain wall motion have been investigated for this system, using micromagnetic simulations. Three types of geometries have been taken into account: bulk, thin film and wire, and for all of them a full comparison is done between the effect of the applied field and injected current. The reduction of the system's dimension induces the decrease of the critical field and the critical current, but it does not influence the domain wall displacement mechanism.

Magnetization switching driven by spin-transfer-torque in high-TMR magnetic tunnel junctions

International Nuclear Information System (INIS)

Aurelio, D.; Torres, L.; Finocchio, G.

2009-01-01

This paper presents a numerical study of magnetization switching driven by spin-polarized current in high-TMR magnetic tunnel junctions (TMR>100%). The current density distribution throughout the free-layer is computed dynamically, by modeling the ferromagnet/insulator/ferromagnet trilayer as a series of parallel resistances. The validity of the main hypothesis, which states that the current flows perpendicular to the sample plane, has been verified by numerically solving the Poisson equation. Our results show that the nonuniform current density distribution is a source of asymmetry to the switching process. Furthermore, we observe that the reversal mechanisms are characterized by well-defined localized pre-switching oscillation modes.

Recent results on the giant magnetoresistance in magnetic multilayers (anisotropy, thermal variation and CCP-GMR)

Science.gov (United States)

Dieny, B.; Granovsky, A.; Vedyaev, A.; Ryzhanova, N.; Cowache, C.; Pereira, L. G.

1995-12-01

We present some recent results obtained on the electrical transport properties in magnetic multilayers. Three points are addressed. The first one is an experimental demonstration of the existence of an intrinsic anisotropy of the giant magnetoresistance (GMR). The experiments have been carried out on spin-valve samples for which there is no contribution of the usual anisotropic magnetoresistance to the observed magnetoresistance. The GMR amplitude is found to be larger (lower) in the direction perpendicular (parallel) to the sensing current. The second point concerns a quantitative analysis of the thermal variation of the CIP (current-in-plane) GMR in magnetic multilayers. This analysis is based on a semi-classical theory including the spin-intermixing due to spin-flip scattering by magnons. This approach allows quantitatively evaluation of the respective weights of the various contributions to the thermal decrease in GMR: (i) scattering by magnons in the bulk of the ferromagnetic layers; (ii) phonon scattering in the non-magnetic spacer layer; and (iii) interfacial scattering by paramagnetic interfacial layers which may form as the temperature is increased. The third point is a theoretical investigation of the CPP (current perpendicular to the plane) electrical transport through an interface between two semi-infinite metallic materials. It is shown that when a potential step U exists at such an interface, this step gives rise to an interfacial resistance proportional to U2. It also leads to the existence of large oscillations in the electric fields on both sides of the interface.

Spin-wave thermal population as temperature probe in magnetic tunnel junctions

Energy Technology Data Exchange (ETDEWEB)

Le Goff, A., E-mail: adrien.le-goff@u-psud.fr; Devolder, T. [Institut d' Electronique Fondamentale, CNRS, Univ. Paris-Sud, Université Paris-Saclay, 91405 Orsay (France); Nikitin, V. [SAMSUNG Electronics Corporation, 601 McCarthy Blvd Milpitas, California 95035 (United States)

2016-07-14

We study whether a direct measurement of the absolute temperature of a Magnetic Tunnel Junction (MTJ) can be performed using the high frequency electrical noise that it delivers under a finite voltage bias. Our method includes quasi-static hysteresis loop measurements of the MTJ, together with the field-dependence of its spin wave noise spectra. We rely on an analytical modeling of the spectra by assuming independent fluctuations of the different sub-systems of the tunnel junction that are described as macrospin fluctuators. We illustrate our method on perpendicularly magnetized MgO-based MTJs patterned in 50 × 100 nm{sup 2} nanopillars. We apply hard axis (in-plane) fields to let the magnetic thermal fluctuations yield finite conductance fluctuations of the MTJ. Instead of the free layer fluctuations that are observed to be affected by both spin-torque and temperature, we use the magnetization fluctuations of the sole reference layers. Their much stronger anisotropy and their much heavier damping render them essentially immune to spin-torque. We illustrate our method by determining current-induced heating of the perpendicularly magnetized tunnel junction at voltages similar to those used in spin-torque memory applications. The absolute temperature can be deduced with a precision of ±60 K, and we can exclude any substantial heating at the spin-torque switching voltage.

Ultra-low-pressure sputtering to improve exchange bias and tune linear ranges in spin valves

Energy Technology Data Exchange (ETDEWEB)

Tang, XiaoLi, E-mail: tangtang1227@163.com; Yu, You; Liu, Ru; Su, Hua; Zhang, HuaiWu; Zhong, ZhiYong; Jing, YuLan

2017-05-01

A series of CoFe/IrMn exchange bilayers was grown by DC-sputtering at different ultra-low argon pressures ranging from 0.008 to 0.1 Pa. This pressure range was one to two orders lower than the normal sputtering pressure. Results revealed that the exchange bias increased from 140 to 250 Oe in CoFe(10 nm)/IrMn (15 nm) bilayers of fixed thickness because of the improved crystalline structure and morphological uniformity of films. Since ferromagnetic /antiferromagnetic (FM/AF) bilayers are always used in linear magnetic sensors as detection layers, the varying exchange bias can successfully achieve tunable linear range in a crossed pinning spin valve. The linear range could be adjustable from −80 Oe – +80 Oe to −150 Oe – +150 Oe on the basis of giant magnetoresistance responses. Therefore, this method provides a simple method to tune the operating range of magnetic field sensors. - Highlights: • Increasing exchange bias was achieved in bilayer at ultra-low-pressure sputtering. • The low void density and smooth surface were achieved in low pressure. • Varying exchange bias achieved tunable linear range in spin valve.

Large Magnetoresistance at High Bias Voltage in Double-layer Organic Spin Valves

Science.gov (United States)

Subedi, R. C.; Liang, S. H.; Geng, R.; Zhang, Q. T.; Lou, L.; Wang, J.; Han, X. F.; Nguyen, T. D.

We report studies of magnetoresistance (MR) in double-layer organic spin valves (DOSV) using tris (8-hydroxyquinolinato) aluminum (Alq3) spacers. The device exhibits three distinct resistance levels depending on the relative magnetizations of the ferromagnetic electrodes. We observed a much weaker bias voltage dependence of MR in the device compared to that in the conventional organic spin valve (OSV). The MR magnitude reduces by the factor of two at 0.7 V bias voltage in the DOSV compared to 0.02 V in the conventional OSV. Remarkably, the MR magnitude reaches 0.3% at 6 V bias in the DOSVs, the largest MR response ever reported in OSVs at this bias. Our finding may have a significant impact on achieving high efficient bipolar OSVs strictly performed at high voltages. University of Georgia start-up fund, Ministry of Education, Singapore, National Natural Science Foundation of China.

Inverse Magnetoresistance in Polymer Spin Valves.

Science.gov (United States)

Ding, Shuaishuai; Tian, Yuan; Li, Yang; Mi, Wenbo; Dong, Huanli; Zhang, Xiaotao; Hu, Wenping; Zhu, Daoben

2017-05-10

In this work, both negative and positive magnetoresistance (MR) in solution-processed regioregular poly(3-hexylthiophene) (RR-P3HT) is observed in organic spin valves (OSVs) with vertical La 2/3 Sr 1/3 MnO 3 (LSMO)/P3HT/AlO x /Co configuration. The ferromagnetic (FM) LSMO electrode with near-atomic flatness is fabricated by a DC facing-target magnetron sputtering method. This research is focused on the origin of the MR inversion. Two types of devices are investigated in details: One with Co penetration shows a negative MR of 0.2%, while the other well-defined device with a nonlinear behavior has a positive MR of 15.6%. The MR measurements in LSMO/AlO x /Co and LSMO/Co junctions are carried to exclude the interference of insulating layer and two FM electrodes themselves. By examining the Co thicknesses and their corresponding magnetic hysteresis loops, a spin-dependent hybrid-interface-state model by Co penetration is induced to explain the MR sign inversion. These results proven by density functional theory (DFT) calculations may shed light on the controllable interfacial properties in designing novel OSV devices.

Current-Nonlinear Hall Effect and Spin-Orbit Torque Magnetization Switching in a Magnetic Topological Insulator

Science.gov (United States)

Yasuda, K.; Tsukazaki, A.; Yoshimi, R.; Kondou, K.; Takahashi, K. S.; Otani, Y.; Kawasaki, M.; Tokura, Y.

2017-09-01

The current-nonlinear Hall effect or second harmonic Hall voltage is widely used as one of the methods for estimating charge-spin conversion efficiency, which is attributed to the magnetization oscillation by spin-orbit torque (SOT). Here, we argue the second harmonic Hall voltage under a large in-plane magnetic field with an in-plane magnetization configuration in magnetic-nonmagnetic topological insulator (TI) heterostructures, Crx (Bi1 -ySby )2 -xTe3 /(Bi1 -ySby )2Te3 , where it is clearly shown that the large second harmonic voltage is governed not by SOT but mainly by asymmetric magnon scattering without macroscopic magnetization oscillation. Thus, this method does not allow an accurate estimation of charge-spin conversion efficiency in TI. Instead, the SOT contribution is exemplified by current pulse induced nonvolatile magnetization switching, which is realized with a current density of 2.5 ×1010 A m-2 , showing its potential as a spintronic material.

Spin current evolution in the separated spin-up and spin-down quantum hydrodynamics

International Nuclear Information System (INIS)

Trukhanova, Mariya Iv.

2015-01-01

We have developed a method of quantum hydrodynamics (QHD) that describes particles with spin-up and with spin-down in separate. We have derived the equation of the spin current evolution as a part of the set of the quantum hydrodynamics equations that treat particles with different projection of spin on the preferable direction as two different species. We have studied orthogonal propagation of waves in the external magnetic field and determined the contribution of quantum corrections due to the Bohm potential and to magnetization energy of particles with different projections of spin in the spin-current wave dispersion. We have analyzed the limits of weak and strong magnetic fields. - Highlights: • We derive the spin current equation for particles with different projection of spin. • We predict the contribution of Bohm potential to the dynamics of spin current. • We derive the spin-current wave in the system of spin-polarized particles. • We study the propagation of spin-acoustic wave in magnetized dielectrics.

Tunnel Junction with Perpendicular Magnetic Anisotropy: Status and Challenges

Directory of Open Access Journals (Sweden)

Mengxing Wang

2015-08-01

Full Text Available Magnetic tunnel junction (MTJ, which arises from emerging spintronics, has the potential to become the basic component of novel memory, logic circuits, and other applications. Particularly since the first demonstration of current induced magnetization switching in MTJ, spin transfer torque magnetic random access memory (STT-MRAM has sparked a huge interest thanks to its non-volatility, fast access speed, and infinite endurance. However, along with the advanced nodes scaling, MTJ with in-plane magnetic anisotropy suffers from modest thermal stability, high power consumption, and manufactural challenges. To address these concerns, focus of research has converted to the preferable perpendicular magnetic anisotropy (PMA based MTJ, whereas a number of conditions still have to be met before its practical application. This paper overviews the principles of PMA and STT, where relevant issues are preliminarily discussed. Centering on the interfacial PMA in CoFeB/MgO system, we present the fundamentals and latest progress in the engineering, material, and structural points of view. The last part illustrates potential investigations and applications with regard to MTJ with interfacial PMA.

Spin polarization of tunneling current in barriers with spin-orbit coupling

International Nuclear Information System (INIS)

Fujita, T; Jalil, M B A; Tan, S G

2008-01-01

We present a general method for evaluating the maximum transmitted spin polarization and optimal spin axis for an arbitrary spin-orbit coupling (SOC) barrier system, in which the spins lie in the azimuthal plane and finite spin polarization is achieved by wavevector filtering of electrons. Besides momentum filtering, another prerequisite for finite spin polarization is asymmetric occupation or transmission probabilities of the eigenstates of the SOC Hamiltonian. This is achieved most efficiently by resonant tunneling through multiple SOC barriers. We apply our analysis to common SOC mechanisms in semiconductors: pure bulk Dresselhaus SOC, heterostructures with mixed Dresselhaus and Rashba SOC and strain-induced SOC. In particular, we find that the interplay between Dresselhaus and Rashba SOC effects can yield several advantageous features for spin filter and spin injector functions, such as increased robustness to wavevector spread of electrons

Spin polarization of tunneling current in barriers with spin-orbit coupling.

Science.gov (United States)

Fujita, T; Jalil, M B A; Tan, S G

2008-03-19

We present a general method for evaluating the maximum transmitted spin polarization and optimal spin axis for an arbitrary spin-orbit coupling (SOC) barrier system, in which the spins lie in the azimuthal plane and finite spin polarization is achieved by wavevector filtering of electrons. Besides momentum filtering, another prerequisite for finite spin polarization is asymmetric occupation or transmission probabilities of the eigenstates of the SOC Hamiltonian. This is achieved most efficiently by resonant tunneling through multiple SOC barriers. We apply our analysis to common SOC mechanisms in semiconductors: pure bulk Dresselhaus SOC, heterostructures with mixed Dresselhaus and Rashba SOC and strain-induced SOC. In particular, we find that the interplay between Dresselhaus and Rashba SOC effects can yield several advantageous features for spin filter and spin injector functions, such as increased robustness to wavevector spread of electrons.

Giant magnetoresistance in lateral metallic nanostructures for spintronic applications.

Science.gov (United States)

Zahnd, G; Vila, L; Pham, V T; Marty, A; Beigné, C; Vergnaud, C; Attané, J P

2017-08-25

In this letter, we discuss the shift observed in spintronics from the current-perpendicular-to-plane geometry towards lateral geometries, illustrating the new opportunities offered by this configuration. Using CoFe-based all-metallic LSVs, we show that giant magnetoresistance variations of more than 10% can be obtained, competitive with the current-perpendicular-to-plane giant magnetoresistance. We then focus on the interest of being able to tailor freely the geometries. On the one hand, by tailoring the non-magnetic parts, we show that it is possible to enhance the spin signal of giant magnetoresistance structures. On the other hand, we show that tailoring the geometry of lateral structures allows creating a multilevel memory with high spin signals, by controlling the coercivity and shape anisotropy of the magnetic parts. Furthermore, we study a new device in which the magnetization direction of a nanodisk can be detected. We thus show that the ability to control the magnetic properties can be used to take advantage of all the spin degrees of freedom, which are usually occulted in current-perpendicular-to-plane devices. This flexibility of lateral structures relatively to current-perpendicular-to-plane structures is thus found to offer a new playground for the development of spintronic applications.

Spin-dependent electronic transport characteristics in Fe4N/BiFeO3/Fe4N perpendicular magnetic tunnel junctions

Science.gov (United States)

Yin, Li; Wang, Xiaocha; Mi, Wenbo

2018-01-01

Perpendicular magnetic tunnel junctions (MTJs) have attracted increasing attention owing to the low energy consumption and wide application prospects. Herewith, against Julliere's formula, an inverse tunnel magnetoresistance (TMR) appears in tetragonal Fe4N/BiFeO3/Fe4N perpendicular MTJs, which is attributed to the binding between the interface resonant tunneling state and central (bordered) hot spots. Especially, antiferromagnetic BiFeO3 shows an extra spin-polarized resonant state in the barrier, which provides a magnetic-barrier factor to affect the tunneling transport in MTJs. Meanwhile, due to the spin-polarized transport in Fe4N/BiFeO3/Fe4N MTJs, the sign of TMR can be tuned by the applied bias. The tunable TMR and resonant magnetic barrier effect pave the way for clarifying the tunneling transport in other junctions and spintronic devices.

Scattering of spinning test particles by gravitational plane waves

International Nuclear Information System (INIS)

Bini, D.; Gemelli, G.

1997-01-01

The authors study the motion of spinning particles in the gravitational plane-wave background and discuss particular solutions under a suitable choice of supplementary conditions. An analysis of the discontinuity of the motion across the wavefront is presented too

Modeling the collective excitations in a full Heusler Co2 FeAl0.5 Si0.5 (CFAS) spin valve magnetic nanopillar in the electromagnetic field

International Nuclear Information System (INIS)

David, Cherine; Arumugam, Brinda; Rajamani, Amuda; Natarajan, Kanimozhi

2014-01-01

This paper describes the physics of collective excitations that are caused by spin-transfer torques in CFAS magnetic multilayer. When the magnetizations of the pinned and free layers are not collinear with each other, the spin-polarized currents transfer angular momentum to the magnetizations near the interfaces, giving rise to spin-transfer torques. The currents in magnetic multilayer are spin polarised and can carry enough angular momentum. When an electron spin carried by the current interacts with a magnetic layer, the exchange interaction leads to torque between the spin and the magnetization vector of the free layer. This is Spin Transfer Torque (STT) and it excites the magnetization when it is large enough. The Spin Transfer Torque induced collective excitations for the CFAS spin valve pillar have been extensively studied in this paper. - Highlights: • We have modeled LLGS equation for CFAS multilayer array. • The dynamics of collective excitation induced by STT is investigated. • The interactions exhibit solitonic behaviour at both limiting modes of polarization. • The spin components of the solitons are graphically represented

Noise in tunneling spin current across coupled quantum spin chains

Science.gov (United States)

Aftergood, Joshua; Takei, So

2018-01-01

We theoretically study the spin current and its dc noise generated between two spin-1 /2 spin chains weakly coupled at a single site in the presence of an over-population of spin excitations and a temperature elevation in one subsystem relative to the other, and we compare the corresponding transport quantities across two weakly coupled magnetic insulators hosting magnons. In the spin chain scenario, we find that applying a temperature bias exclusively leads to a vanishing spin current and a concomitant divergence in the spin Fano factor, defined as the spin current noise-to-signal ratio. This divergence is shown to have an exact analogy to the physics of electron scattering between fractional quantum Hall edge states and not to arise in the magnon scenario. We also reveal a suppression in the spin current noise that exclusively arises in the spin chain scenario due to the fermion nature of the spin-1/2 operators. We discuss how the spin Fano factor may be extracted experimentally via the inverse spin Hall effect used extensively in spintronics.

Spin currents in metallic nanostructures

Energy Technology Data Exchange (ETDEWEB)

Czeschka, Franz Dominik

2011-09-05

A pure spin current, i.e., a flow of angular momentum without accompanying net charge current, is a key ingredient in the field of spintronics. In this thesis, we experimentally investigated two different concepts for pure spin current sources suggested by theory. The first is based on a time-dependent magnetization precession which ''pumps'' a pure spin current into an adjacent non-magnetic conductor. Our experiments quantitatively corroborated important predictions expected theoretically for this approach, including the dependence of the spin current on the sample geometry and the microwave power. Even more important, we could show for the first time that the spin pumping concept is viable in a large variety of ferromagnetic materials and that it only depends on the magnetization damping. Therefore, our experiments established spin pumping as generic phenomenon and demonstrated that it is a powerful way to generate pure spin currents. The second theoretical concept is based on the conversion of charge currents into spin currents in non-magnetic nanostructures via the spin Hall effect. We experimentally investigated this approach in H-shaped, metallic nanodevices, and found that the predictions are linked to requirements not realizable with the present experimental techniques, neither in sample fabrication nor in measurement technique. Indeed, our experimental data could be consistently understood by a spin-independent transport model describing the transition from diffusive to ballistic transport. In addition, the implementation of advanced fabrication and measurement techniques allowed to discover a new non-local phenomenon, the non-local anisotropic magnetoresistance. Finally, we also studied spin-polarized supercurrents carried by spin-triplet Cooper pairs. We found that low resistance interfaces are a key requirement for further experiments in this direction. (orig.)

Origin of perpendicular magnetic anisotropy in Co/Ni multilayers

Science.gov (United States)

Arora, M.; Hübner, R.; Suess, D.; Heinrich, B.; Girt, E.

2017-07-01

We studied the variation in perpendicular magnetic anisotropy of (111) textured Au /N ×[Co /Ni ]/Au films as a function of the number of bilayer repeats N . The ferromagnetic resonance and superconducting quantum interference device magnetometer measurements show that the perpendicular magnetic anisotropy of Co/Ni multilayers first increases with N for N ≤10 and then moderately decreases for N >10 . The model we propose reveals that the decrease of the anisotropy for N reduction in the magnetoelastic and magnetocrystalline anisotropies. A moderate decrease in the perpendicular magnetic anisotropy for N >10 is due to the reduction in the magnetocrystalline and the surface anisotropies. To calculate the contribution of magnetoelastic anisotropy in the Co/Ni multilayers, in-plane and out-of-plane x-ray diffraction measurements are performed to determine the spacing between Co/Ni (111) and (220) planes. The magnetocrystalline bulk anisotropy is estimated from the difference in the perpendicular and parallel g factors of Co/Ni multilayers that are measured using the in-plane and out-of-plane ferromagnetic resonance measurements. Transmission electron microscopy has been used to estimate the multilayer film roughness. These values are used to calculate the roughness-induced surface and magnetocrystalline anisotropy coefficients as a function of N .

Spin-dependent transport and current-induced spin transfer torque in a disordered zigzag silicene nanoribbon

International Nuclear Information System (INIS)

Zhou, Benliang; Zhou, Benhu; Liu, Guang; Guo, Dan; Zhou, Guanghui

2016-01-01

We study theoretically the spin-dependent transport and the current-induced spin transfer torque (STT) for a zigzag silicene nanoribbon (ZSiNR) with Anderson-type disorders between two ferromagnetic electrodes. By using the nonequilibrium Green's function method, it is predicted that the transport property and STT through the junction depend sensitively on the disorder, especially around the Dirac point. As a result, the conductance decreases and increases for two electrode in parallel and antiparallel configurations, respectively. Due to the disorder, the magnetoresistance (MR) decreases accordingly even within the energy regime for the perfect plateau without disorders. In addition, the conductance versus the relative angle of the magnetization shows a cosine-like behavior. The STT per unit of the bias voltage versus the angle of the magnetization exhibits a sine-like behavior, and versus the Fermi energy is antisymmetrical to the Dirac point and exhibits sharp peaks. Furthermore, the peaks of the STT are suppressed much as the disorder strength increases, especially around the Dirac point. The results obtained here may provide a valuable suggestion to experimentally design spin valve devices based on ZSiNR.

Spin-dependent transport and current-induced spin transfer torque in a disordered zigzag silicene nanoribbon

Energy Technology Data Exchange (ETDEWEB)

Zhou, Benliang [Department of Physics and Key Laboratory for Low-Dimensional Quantum Structures and Manipulation (Ministry of Education), Synergetic Innovation Center for Quantum Effects and Applications of Hunan, Hunan Normal University, Changsha 410081 (China); Zhou, Benhu [Department of Physics, Shaoyang University, Shaoyang 422001 (China); Liu, Guang; Guo, Dan [Department of Physics and Key Laboratory for Low-Dimensional Quantum Structures and Manipulation (Ministry of Education), Synergetic Innovation Center for Quantum Effects and Applications of Hunan, Hunan Normal University, Changsha 410081 (China); Zhou, Guanghui, E-mail: ghzhou@hunnu.edu.cn [Department of Physics and Key Laboratory for Low-Dimensional Quantum Structures and Manipulation (Ministry of Education), Synergetic Innovation Center for Quantum Effects and Applications of Hunan, Hunan Normal University, Changsha 410081 (China)

2016-11-01

We study theoretically the spin-dependent transport and the current-induced spin transfer torque (STT) for a zigzag silicene nanoribbon (ZSiNR) with Anderson-type disorders between two ferromagnetic electrodes. By using the nonequilibrium Green's function method, it is predicted that the transport property and STT through the junction depend sensitively on the disorder, especially around the Dirac point. As a result, the conductance decreases and increases for two electrode in parallel and antiparallel configurations, respectively. Due to the disorder, the magnetoresistance (MR) decreases accordingly even within the energy regime for the perfect plateau without disorders. In addition, the conductance versus the relative angle of the magnetization shows a cosine-like behavior. The STT per unit of the bias voltage versus the angle of the magnetization exhibits a sine-like behavior, and versus the Fermi energy is antisymmetrical to the Dirac point and exhibits sharp peaks. Furthermore, the peaks of the STT are suppressed much as the disorder strength increases, especially around the Dirac point. The results obtained here may provide a valuable suggestion to experimentally design spin valve devices based on ZSiNR.

Magnetoresistance in hybrid organic spin valves at the onset of multiple-step tunneling.

Science.gov (United States)

Schoonus, J J H M; Lumens, P G E; Wagemans, W; Kohlhepp, J T; Bobbert, P A; Swagten, H J M; Koopmans, B

2009-10-02

By combining experiments with simple model calculations, we obtain new insight in spin transport through hybrid, CoFeB/Al2O3(1.5 nm)/tris(8-hydroxyquinoline)aluminium (Alq3)/Co spin valves. We have measured the characteristic changes in the I-V behavior as well as the intrinsic loss of magnetoresistance at the onset of multiple-step tunneling. In the regime of multiple-step tunneling, under the condition of low hopping rates, spin precession in the presence of hyperfine coupling is conjectured to be the relevant source of spin relaxation. A quantitative analysis leads to the prediction of a symmetric magnetoresistance around zero magnetic field in addition to the hysteretic magnetoresistance curves, which are indeed observed in our experiments.

Homoepitaxial graphene tunnel barriers for spin transport

Directory of Open Access Journals (Sweden)

Adam L. Friedman

2016-05-01

Full Text Available Tunnel barriers are key elements for both charge-and spin-based electronics, offering devices with reduced power consumption and new paradigms for information processing. Such devices require mating dissimilar materials, raising issues of heteroepitaxy, interface stability, and electronic states that severely complicate fabrication and compromise performance. Graphene is the perfect tunnel barrier. It is an insulator out-of-plane, possesses a defect-free, linear habit, and is impervious to interdiffusion. Nonetheless, true tunneling between two stacked graphene layers is not possible in environmental conditions usable for electronics applications. However, two stacked graphene layers can be decoupled using chemical functionalization. Here, we demonstrate that hydrogenation or fluorination of graphene can be used to create a tunnel barrier. We demonstrate successful tunneling by measuring non-linear IV curves and a weakly temperature dependent zero-bias resistance. We demonstrate lateral transport of spin currents in non-local spin-valve structures, and determine spin lifetimes with the non-local Hanle effect. We compare the results for hydrogenated and fluorinated tunnel and we discuss the possibility that ferromagnetic moments in the hydrogenated graphene tunnel barrier affect the spin transport of our devices.

Homoepitaxial graphene tunnel barriers for spin transport

Science.gov (United States)

Friedman, Adam L.; van't Erve, Olaf M. J.; Robinson, Jeremy T.; Whitener, Keith E.; Jonker, Berend T.

2016-05-01

Tunnel barriers are key elements for both charge-and spin-based electronics, offering devices with reduced power consumption and new paradigms for information processing. Such devices require mating dissimilar materials, raising issues of heteroepitaxy, interface stability, and electronic states that severely complicate fabrication and compromise performance. Graphene is the perfect tunnel barrier. It is an insulator out-of-plane, possesses a defect-free, linear habit, and is impervious to interdiffusion. Nonetheless, true tunneling between two stacked graphene layers is not possible in environmental conditions usable for electronics applications. However, two stacked graphene layers can be decoupled using chemical functionalization. Here, we demonstrate that hydrogenation or fluorination of graphene can be used to create a tunnel barrier. We demonstrate successful tunneling by measuring non-linear IV curves and a weakly temperature dependent zero-bias resistance. We demonstrate lateral transport of spin currents in non-local spin-valve structures, and determine spin lifetimes with the non-local Hanle effect. We compare the results for hydrogenated and fluorinated tunnel and we discuss the possibility that ferromagnetic moments in the hydrogenated graphene tunnel barrier affect the spin transport of our devices.

Observation of the in-plane spin-dephasing anisotropy in [111]-grown GaAs/AlGaAs quantum well

International Nuclear Information System (INIS)

Zhao, Chunbo; Li, Junbin; Yu, Ying; Ni, Haiqiao; Niu, Zhichuan; Zhang, Xinhui

2014-01-01

The electron density and temperature dependent in-plane spin-dephasing anisotropy in [111]-grown GaAs quantum well (QW) has been investigated by time-resolved magneto-Kerr rotation technique. Due to the specific symmetry of [111]-grown quantum well, the in-plane Rashba and linear Dresselhaus effective spin-orbit magnetic field is parallel to each other for electron wave vectors in all directions. However, an obvious in-plane spin-dephasing anisotropy comparing [2 ¯ 11] with [01 ¯ 1] crystalline orientations has been observed and discussed in this work. Our results demonstrate the innegligible spin dephasing channel through inhomogeneous broadening induced by the out-of-plane non-linear Dresselhaus field, which arises naturally from the C 3 symmetry of [111]-grown GaAs QW

Theory of current-induced spin polarization in an electron gas

Science.gov (United States)

Gorini, Cosimo; Maleki Sheikhabadi, Amin; Shen, Ka; Tokatly, Ilya V.; Vignale, Giovanni; Raimondi, Roberto

2017-05-01

We derive the Bloch equations for the spin dynamics of a two-dimensional electron gas in the presence of spin-orbit coupling. For the latter we consider both the intrinsic mechanisms of structure inversion asymmetry (Rashba) and bulk inversion asymmetry (Dresselhaus), and the extrinsic ones arising from the scattering from impurities. The derivation is based on the SU(2) gauge-field formulation of the Rashba-Dresselhaus spin-orbit coupling. Our main result is the identification of a spin-generation torque arising from Elliot-Yafet scattering, which opposes a similar term arising from Dyakonov-Perel relaxation. Such a torque, which to the best of our knowledge has gone unnoticed so far, is of basic nature, i.e., should be effective whenever Elliott-Yafet processes are present in a system with intrinsic spin-orbit coupling, irrespective of further specific details. The spin-generation torque contributes to the current-induced spin polarization (CISP), also known as inverse spin-galvanic or Edelstein effect. As a result, the behavior of the CISP turns out to be more complex than one would surmise from consideration of the internal Rashba-Dresselhaus fields alone. In particular, the symmetry of the current-induced spin polarization does not necessarily coincide with that of the internal Rashba-Dresselhaus field, and an out-of-plane component of the CISP is generally predicted, as observed in recent experiments. We also discuss the extension to the three-dimensional electron gas, which may be relevant for the interpretation of experiments in thin films.

Electron spin resonance study of x-irradiated single crystals of ammonium chloroacetate

International Nuclear Information System (INIS)

Yoshihara, M.

1978-01-01

The quadrupole interaction was considered to be a second order perturbation. Using perturbation theory, formulas were derived for the positions and relative intensities of both allowed (Δm = 0) and forbidden (Δm = +- 1, +- 2) transitions. Using this information, expected spectral patterns were constructed for comparison with observed spectra. It has also been possible to determine the signs of chlorine hyperfine coupling parameters. In this way the complete chlorine coupling tensors were obtained for both the magnetic and quadrupole interactions in the CClHCOONH 4 radical. The chlorine magnetic hyperfine couplings are A/sub x/ = 20.5 G perpendicular to the radical plane, A/sub y/ = -5.2 G perpendicular to the C-Cl bond (in the radical plane) and A/sub z/ = -6.3 G in the direction of the C-Cl bond. The quadrupole couplings are P/sub x/ = 2.3 G perpendicular to the radical plane, P/sub y/ = 2.1 G perpendicular to the C-Cl bond (in the plane) and P/sub z/ = -4.4 G in the direction of the C-Cl bond. The hydrogen hyperfine tensor components are A/sub x//sup H/ = -21.8 G perpendicular to the radical plane, A/sub y//sup H/ = -9.3 G in the direction of the C-H bond and A/sub z//sup H/ = -32.5 G perpendicular to the C-H bond (in the radical plane). The g-factor has the values g/sub x/ = 2.0021 perpendicular to the radical plane, g/sub y/ = 2.0080 perpendicular to the C-Cl bond (in the radical plane) and g/sub z/ = 2.0081 in the C-Cl bond. The direction of the C-Cl bond of the radical was inferred. Evaluation of the hydrogen hyperfine couplings has led to the determination of the direction of the C-H bond. From this information the radical was determined to be a planar π-radical. A determination was made of the spin densities of the unpaired electron in the various orbitals: C 2 p/sub x/ = +0.76, Cl 3s = +0.0017, Cl 3p/sub x/ = +0.175, and Cl 3p/sub z/ = -0.012

Spin-waves in Antiferromagnetic Single-crystal LiFePO4

International Nuclear Information System (INIS)

Li, Jiying; Garlea, Vasile O.; Zarestky, Jarel; Vaknin, D.

2006-01-01

Spin-wave dispersions in the antiferromagnetic state of single-crystal LiFePO 4 were determined by inelastic neutron scattering measurements. The dispersion curves measured from the (0,1,0) reflection along both a* and b* reciprocal-space directions reflect the anisotropic coupling of the layered Fe 2+ (S=2) spin system. The spin-wave dispersion curves were theoretically modeled using linear spin-wave theory by including in the spin Hamiltonian in-plane nearest- and next-nearest-neighbor interactions (J 1 and J 2 ), inter-plane nearest-neighbor interactions (J(perpendicular)) and a single-ion anisotropy (D). A weak (0,1,0) magnetic peak was observed in elastic neutron scattering studies of the same crystal indicating that the ground state of the staggered iron moments is not along the (0,1,0) direction, as previously reported from polycrystalline samples studies, but slightly rotated away from this axis.

Magneto-induced tunability of thermo-spin current in deformed zigzag graphene nanoribbons

Energy Technology Data Exchange (ETDEWEB)

Adinehloo, Davoud, E-mail: davood-adineloo@ut.ac.ir; Fathipour, Morteza [School of Electrical and Computer Engineering, University of Tehran, Tehran 14395-515 (Iran, Islamic Republic of)

2015-12-21

The aim of this report is to unfold how the thermo-electric spin-polarized current in a transverse-biased zigzag graphene nanoribbon changes in the presence of uniaxial deformations and uniform perpendicular magnetic field. Employing the two-parameter Hubbard model along with the non-equilibrium Green's function formalism, we found that both uniaxial strain and magnetic field can significantly modulate the bandgap, local distribution of edge states, and the critical transverse electric field needed to achieve the half-metallic phase in the ribbon. Our analysis shows a significant enhancement of the maximum attainable spin-polarized current as functions of both source temperature and contacts temperature difference, with increasing the magnetic field or applying any magnitude of compressive strain. Furthermore, it is shown that the magneto-resistance ratio of the device, can be drastically tuned via strain engineering, reaching values as high as 2 × 10{sup 4}% for compressive strains of 5% magnitude.

Experimental realization of a silicon spin field-effect transistor

OpenAIRE

Huang, Biqin; Monsma, Douwe J.; Appelbaum, Ian

2007-01-01

A longitudinal electric field is used to control the transit time (through an undoped silicon vertical channel) of spin-polarized electrons precessing in a perpendicular magnetic field. Since an applied voltage determines the final spin direction at the spin detector and hence the output collector current, this comprises a spin field-effect transistor. An improved hot-electron spin injector providing ~115% magnetocurrent, corresponding to at least ~38% electron current spin polarization after...

Organic Spin-Valves and Beyond: Spin Injection and Transport in Organic Semiconductors and the Effect of Interfacial Engineering.

Science.gov (United States)

Jang, Hyuk-Jae; Richter, Curt A

2017-01-01

Since the first observation of the spin-valve effect through organic semiconductors, efforts to realize novel spintronic technologies based on organic semiconductors have been rapidly growing. However, a complete understanding of spin-polarized carrier injection and transport in organic semiconductors is still lacking and under debate. For example, there is still no clear understanding of major spin-flip mechanisms in organic semiconductors and the role of hybrid metal-organic interfaces in spin injection. Recent findings suggest that organic single crystals can provide spin-transport media with much less structural disorder relative to organic thin films, thus reducing momentum scattering. Additionally, modification of the band energetics, morphology, and even spin magnetic moment at the metal-organic interface by interface engineering can greatly impact the efficiency of spin-polarized carrier injection. Here, progress on efficient spin-polarized carrier injection into organic semiconductors from ferromagnetic metals by using various interface engineering techniques is presented, such as inserting a metallic interlayer, a molecular self-assembled monolayer (SAM), and a ballistic carrier emitter. In addition, efforts to realize long spin transport in single-crystalline organic semiconductors are discussed. The focus here is on understanding and maximizing spin-polarized carrier injection and transport in organic semiconductors and insight is provided for the realization of emerging organic spintronics technologies. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Spin accumulation in disordered topological insulator ultrathin films

Science.gov (United States)

Siu, Zhuo Bin; Ho, Cong Son; Tan, Seng Ghee; Jalil, Mansoor B. A.

2017-08-01

Topological insulator (TI) ultrathin films differ from the more commonly studied semi-infinite bulk TIs in that the former possess both top and bottom surfaces where the surface states localized at different surfaces can couple to one another across the finite thickness of the film. In the presence of an in-plane magnetization, the TI thin films display two distinct phases depending on which of the inter-surface coupling or the magnetization is stronger. In this work, we consider a Bi2Se3 TI thin film system with an in-plane magnetization and numerically calculate the resulting spin accumulation on both surfaces of the film due to an in-plane electric field to linear order. We describe a numerical scheme for performing the Kubo formula calculation in which we include impurity scattering and vertex corrections. We find that the sums of the spin accumulation over the two surfaces in the in-plane direction perpendicular to the magnetization and in the out of plane direction are antisymmetric in Fermi energy around the charge neutrality point and are non-vanishing only when the symmetry between the top and bottom TI surfaces is broken. The impurity scattering, in general, diminishes the magnitude of the spin accumulation.

Photoemission microscopy study of picosecond magnetodynamics in spin-valve-type thin film elements

International Nuclear Information System (INIS)

Schneider, C.M.; Kaiser, A.; Wiemann, C.; Tieg, C.; Cramm, S.

2010-01-01

Exploring ultimate time scales of magnetic switching processes is an important issue in spin electronics. In spin valves or magnetic tunnelling junctions magnetic anisotropies and coupling phenomena alter the magnetodynamic response of the entire system. Understanding the role of these interactions is a key to the design of optimized devices. We have employed time-resolved X-ray photoemission microscopy to address the magnetodynamics in spin-valve-type model systems in the ns- and ps-regime. In Co/Cr/Fe(0 0 1) single crystal elements we find a strong influence of the magnetocrystalline anisotropy, which tends to suppress rotation processes. In addition, we observe a dynamic 'decoupling' of the layers. In low-anisotropy FeNi/Cr/FeCo trilayers, the interlayer coupling character determines the dynamic response. Particularly, rotational processes in the FeNi and FeCo layers are temporarily shifted to each other, which can be related to different coercivities of the individual layers. By contrast, the domain wall motion in both layers closely agrees, caused by an enhanced coupling due to the domain wall stray fields. Our examples demonstrate that the detailed magnetodynamics in coupled magnetic layers is quite complex and depends strongly on the timescale under consideration.

Current-induced domain wall motion: Separating spin torque and Oersted-field effects in Co/Pt nanowires

Energy Technology Data Exchange (ETDEWEB)

Heinen, Jan; Boulle, Olivier; Rousseau, Kevin; Malinowski, Gregory; Klaeui, Mathias [Universitaet Konstanz, Fachbereich Physik, D-78457 Konstanz (Germany); Swagton, Henk J.; Koopmans, Bert [Eindhoven University of Technology, Department of Applied Physics, MB 5600 (Netherlands); Ulysse, Christian; Faini, Giancarlo [CNRS, Phynano team, Laboratoire de Photonique et de Nanostructures, 91460 Marcoussis (France)

2010-07-01

We report on magnetotransport studies on perpendicularly magnetized nanowires with narrow domain wall (DW) structures. Using Co/Pt multilayer nanowires, we have previously shown that Joule heating is concealing most of the current induced domain wall effects, but using a constant sample temperature a large non-adiabacity factor {beta} has been deduced. Here, we carry out experiments for both applied field directions and current polarities, starting from different DW configurations within a Hall cross. We clearly show, using the different symmetries of spin torque and Oersted-field, that the much debated Oersted-field does not contribute to the DW depinning significantly. This allows us to extract the spin torque contribution and the non-adiabacity factor {beta}, which turns out to be in line with previous measurements.

Spin transfer torque with spin diffusion in magnetic tunnel junctions

KAUST Repository

Manchon, Aurelien; Matsumoto, R.; Jaffres, H.; Grollier, J.

2012-01-01

in the metallic layers. We show that spin diffusion mixes the transverse spin current components and dramatically modifies the bias dependence of the effective spin transfer torque. This leads to a significant linear bias dependence of the out-of-plane torque

Exact Landau levels in two-dimensional electron systems with Rashba and Dresselhaus spin-orbit interactions in a perpendicular magnetic field

International Nuclear Information System (INIS)

Zhang Degang

2006-01-01

We study a two-dimensional electron system in the presence of both Rashba and Dresselhaus spin-orbit interactions in a perpendicular magnetic field. Defining two suitable boson operators and using the unitary transformations we are able to obtain the exact Landau levels in the range of all the parameters. When the strengths of the Rashba and Dresselhaus spin-orbit interactions are equal, a new analytical solution for the vanishing Zeeman energy is found, where the orbital and spin wavefunctions of the electron are separated. It is also shown that in this case the Zeeman and spin-orbit splittings are independent of the Landau level index n. Due to the Zeeman energy, new crossing between the eigenstates vertical bar n, k, s = 1, σ) and vertical bar n + 1, k, s' = -1, σ') is produced at a certain magnetic field for larger Rashba spin-orbit coupling. This degeneracy leads to a resonant spin Hall conductance if it happens at the Fermi level. (letter to the editor)

Standing spin-wave mode structure and linewidth in partially disordered hexagonal arrays of perpendicularly magnetized sub-micron Permalloy discs

International Nuclear Information System (INIS)

Ross, N.; Kostylev, M.; Stamps, R. L.

2014-01-01

Standing spin wave mode frequencies and linewidths in partially disordered perpendicular magnetized arrays of sub-micron Permalloy discs are measured using broadband ferromagnetic resonance and compared to analytical results from a single, isolated disc. The measured mode structure qualitatively reproduces the structure expected from the theory. Fitted demagnetizing parameters decrease with increasing array disorder. The frequency difference between the first and second radial modes is found to be higher in the measured array systems than predicted by theory for an isolated disc. The relative frequencies between successive spin wave modes are unaffected by reduction of the long-range ordering of discs in the array. An increase in standing spin wave resonance linewidth at low applied magnetic fields is observed and grows more severe with increased array disorder.

Current induced domain wall motion and tilting in Pt/Co/Ta structures with perpendicular magnetic anisotropy in the presence of the Dyzaloshinskii–Moriya interaction

Science.gov (United States)

Yun, Jijun; Li, Dong; Cui, Baoshan; Guo, Xiaobin; Wu, Kai; Zhang, Xu; Wang, Yupei; Mao, Jian; Zuo, Yalu; Xi, Li

2018-04-01

Current induced domain wall motion (CIDWM) was studied in Pt/Co/Ta structures with perpendicular magnetic anisotropy and the Dyzaloshinskii–Moriya interaction (DMI) by the spin-orbit torque (SOT). We measured the strength of DMI and SOT efficiency in Pt/Co/Ta with the variation of the thickness of Ta using a current induced hysteresis loop shift method. The results indicate that the DMI stabilizes a chiral Néel-type domain wall (DW), and the DW motion can be driven by the enhanced large SOT generated from Pt and Ta with opposite signs of spin Hall angle in Pt/Co/Ta stacks. The CIDWM velocity, which is 104 times larger than the field driven DW velocity, obeys a creep law, and reaches around tens of meters per second with current density of ~106 A cm‑2. We also found that the Joule heating accompanied with current also accelerates the DW motion. Meanwhile, a domain wall tilting was observed, which increases with current density increasing. These results can be explained by the spin Hall effect generated from both heavy metals Pt and Ta, inherent DMI, and the current accompanying Joule heating effect. Our results could provide some new designing prospects to move multiple DWs by SOT for achieving racetrack memories.

Flexible spin-orbit torque devices

Energy Technology Data Exchange (ETDEWEB)

Lee, OukJae; You, Long; Jang, Jaewon; Subramanian, Vivek [Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, California 94720 (United States); Salahuddin, Sayeef [Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, California 94720 (United States); Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)

2015-12-21

We report on state-of-the-art spintronic devices synthesized and fabricated directly on a flexible organic substrate. Large perpendicular magnetic anisotropy was achieved in ultrathin ferromagnetic heterostructures of Pt/Co/MgO sputtered on a non-rigid plastic substrate at room temperature. Subsequently, a full magnetic reversal of the Co was observed by exploiting the spin orbit coupling in Pt that leads to a spin accumulation at the Pt/Co interface when an in-plane current is applied. Quasi-static measurements show the potential for operating these devices at nano-second speeds. Importantly, the behavior of the devices remained unchanged under varying bending conditions (up to a bending radius of ≈ ±20–30 mm). Furthermore, the devices showed robust operation even after application of 10{sup 6} successive pulses, which is likely sufficient for many flexible applications. Thus, this work demonstrates the potential for integrating high performance spintronic devices on flexible substrates, which could lead to many applications ranging from flexible non-volatile magnetic memory to local magnetic resonance imaging.

Flexible spin-orbit torque devices

International Nuclear Information System (INIS)

Lee, OukJae; You, Long; Jang, Jaewon; Subramanian, Vivek; Salahuddin, Sayeef

2015-01-01

We report on state-of-the-art spintronic devices synthesized and fabricated directly on a flexible organic substrate. Large perpendicular magnetic anisotropy was achieved in ultrathin ferromagnetic heterostructures of Pt/Co/MgO sputtered on a non-rigid plastic substrate at room temperature. Subsequently, a full magnetic reversal of the Co was observed by exploiting the spin orbit coupling in Pt that leads to a spin accumulation at the Pt/Co interface when an in-plane current is applied. Quasi-static measurements show the potential for operating these devices at nano-second speeds. Importantly, the behavior of the devices remained unchanged under varying bending conditions (up to a bending radius of ≈ ±20–30 mm). Furthermore, the devices showed robust operation even after application of 10 6 successive pulses, which is likely sufficient for many flexible applications. Thus, this work demonstrates the potential for integrating high performance spintronic devices on flexible substrates, which could lead to many applications ranging from flexible non-volatile magnetic memory to local magnetic resonance imaging

High quality TmIG films with perpendicular magnetic anisotropy grown by sputtering

Science.gov (United States)

Wu, C. N.; Tseng, C. C.; Yeh, S. L.; Lin, K. Y.; Cheng, C. K.; Fanchiang, Y. T.; Hong, M.; Kwo, J.

Ferrimagnetic thulium iron garnet (TmIG) films grown on gadolinium gallium garnet substrates recently showed stress-induced perpendicular magnetic anisotropy (PMA), attractive for realization of quantum anomalous Hall effect (QAHE) of topological insulator (TI) films via the proximity effect. Moreover, current induced magnetization switching of Pt/TmIG has been demonstrated for the development of room temperature (RT) spintronic devices. In this work, high quality TmIG films (about 25nm) were grown by sputtering at RT followed by post-annealing. We showed that the film composition is tunable by varying the growth parameters. The XRD results showed excellent crystallinity of stoichiometric TmIG films with an out-of-plane lattice constant of 1.2322nm, a narrow film rocking curve of 0.017 degree, and a film roughness of 0.2 nm. The stoichiometric films exhibited PMA and the saturation magnetization at RT was 109 emu/cm3 (RT bulk value 110 emu/cm3) with a coercive field of 2.7 Oe. In contrast, TmIG films of Fe deficiency showed in-plane magnetic anisotropy. The high quality sputtered TmIG films will be applied to heterostructures with TIs or metals with strong spin-orbit coupling for novel spintronics.

Study of Spin and Decay-Plane Correlations of W Bosons in the $e^{+} e^{-} \\to W^{+} W^{-}$ Process at LEP

CERN Document Server

Achard, P; Aguilar-Benítez, M; Alcaraz, J; Alemanni, G; Allaby, James V; Aloisio, A; Alviggi, M G; Anderhub, H; Andreev, V P; Anselmo, F; Arefev, A; Azemoon, T; Aziz, T; Bagnaia, P; Bajo, A; Baksay, G; Baksay, L; Baldew, S V; Banerjee, S; Banerjee, Sw; Barczyk, A; Barillère, R; Bartalini, P; Basile, M; Batalova, N; Battiston, R; Bay, A; Becattini, F; Becker, U; Behner, F; Bellucci, L; Berbeco, R; Berdugo, J; Berges, P; Bertucci, B; Betev, B L; Biasini, M; Biglietti, M; Biland, A; Blaising, J J; Blyth, S C; Bobbink, G J; Böhm, A; Boldizsar, L; Borgia, B; Bottai, S; Bourilkov, D; Bourquin, Maurice; Braccini, S; Branson, J G; Brochu, F; Burger, J D; Burger, W J; Cai, X D; Capell, M; Cara Romeo, G; Carlino, G; Cartacci, A; Casaus, J; Cavallari, F; Cavallo, N; Cecchi, C; Cerrada, M; Chamizo-Llatas, M; Chang, Y H; Chemarin, M; Chen, A; Chen, G; Chen, G M; Chen, H F; Chen, H S; Chiefari, G; Cifarelli, Luisa; Cindolo, F; Clare, I; Clare, R; Coignet, G; Colino, N; Costantini, S; de la Cruz, B; Cucciarelli, S; van Dalen, J A; De Asmundis, R; Déglon, P L; Debreczeni, J; Degré, A; Dehmelt, K; Deiters, K; Della Volpe, D; Delmeire, E; Denes, P; De Notaristefani, F; De Salvo, A; Diemoz, M; Dierckxsens, M; Dionisi, C; Dittmar, M; Doria, A; Dova, M T; Duchesneau, D; Duda, M; Echenard, B; Eline, A; El-Hage, A; El-Mamouni, H; Engler, A; Eppling, F J; Extermann, P; Falagán, M A; Falciano, S; Favara, A; Fay, J; Fedin, O; Felcini, M; Ferguson, T; Fesefeldt, H S; Fiandrini, E; Field, J H; Filthaut, F; Fisher, P H; Fisher, W; Fisk, I; Forconi, G; Freudenreich, Klaus; Furetta, C; Galaktionov, Yu; Ganguli, S N; García-Abia, P; Gataullin, M; Gentile, S; Giagu, S; Gong, Z F; Grenier, G; Grimm, O; Grünewald, M W; Guida, M; van Gulik, R; Gupta, V K; Gurtu, A; Gutay, L J; Haas, D; Hatzifotiadou, D; Hebbeker, T; Hervé, A; Hirschfelder, J; Hofer, H; Hohlmann, M; Holzner, G; Hou, S R; Hu, Y; Jin, B N; Jones, L W; de Jong, P; Josa-Mutuberria, I; Kaur, M; Kienzle-Focacci, M N; Kim, J K; Kirkby, Jasper; Kittel, E W; Klimentov, A; König, A C; Kopal, M; Koutsenko, V F; Kraber, M; Krämer, R W; Krüger, A; Kunin, A; Ladrón de Guevara, P; Laktineh, I; Landi, G; Lebeau, M; Lebedev, A; Lebrun, P; Lecomte, P; Lecoq, P; Le Coultre, P; Le Goff, J M; Leiste, R; Levtchenko, M; Levchenko, P M; Li, C; Likhoded, S; Lin, C H; Lin, W T; Linde, Frank L; Lista, L; Liu, Z A; Lohmann, W; Longo, E; Lü, Y S; Luci, C; Luminari, L; Lustermann, W; Ma Wen Gan; Malgeri, L; Malinin, A; Maña, C; Mans, J; Martin, J P; Marzano, F; Mazumdar, K; McNeil, R R; Mele, S; Merola, L; Meschini, M; Metzger, W J; Mihul, A; Milcent, H; Mirabelli, G; Mnich, J; Mohanty, G B; Muanza, G S; Muijs, A J M; Musicar, B; Musy, M; Nagy, S; Natale, S; Napolitano, M; Nessi-Tedaldi, F; Newman, H; Nisati, A; Novák, T; Nowak, H; Ofierzynski, R A; Organtini, G; Pal, I; Palomares, C; Paolucci, P; Paramatti, R; Passaleva, G; Patricelli, S; Paul, T; Pauluzzi, M; Paus, C; Pauss, Felicitas; Pedace, M; Pensotti, S; Perret-Gallix, D; Petersen, B; Piccolo, D; Pierella, F; Pioppi, M; Piroué, P A; Pistolesi, E; Plyaskin, V; Pohl, M; Pozhidaev, V; Pothier, J; Prokofev, D; Prokofiev, D O; Quartieri, J; Rahal-Callot, G; Rahaman, M A; Raics, P; Raja, N; Ramelli, R; Rancoita, P G; Ranieri, R; Raspereza, A V; Razis, P; Ren, D; Rescigno, M; Reucroft, S; Riemann, S; Riles, K; Roe, B P; Romero, L; Rosca, A; Rosemann, C; Rosenbleck, C; Rosier-Lees, S; Roth, S; Rubio, J A; Ruggiero, G; Rykaczewski, H; Sakharov, A; Saremi, S; Sarkar, S; Salicio, J; Sánchez, E; Schäfer, C; Shchegelskii, V; Schopper, Herwig Franz; Schotanus, D J; Sciacca, C; Servoli, L; Shevchenko, S; Shivarov, N; Shoutko, V; Shumilov, E; Shvorob, A; Son, D; Souga, C; Spillantini, P; Steuer, M; Stickland, D P; Stoyanov, B; Strässner, A; Sudhakar, K; Sultanov, G G; Sun, L Z; Sushkov, S; Suter, H; Swain, J D; Szillási, Z; Tang, X W; Tarjan, P; Tauscher, L; Taylor, L; Tellili, B; Teyssier, D; Timmermans, C; Ting, Samuel C C; Ting, S M; Tonwar, S C; Tóth, J; Tully, C; Tung, K L; Ulbricht, J; Valente, E; Van de Walle, R T; Vásquez, R; Veszpremi, V; Vesztergombi, G; Vetlitskii, I; Vicinanza, D; Viertel, Gert M; Villa, S; Vivargent, M; Vlachos, S; Vodopyanov, I; Vogel, H; Vogt, H; Vorobev, I; Vorobyov, A A; Wadhwa, M; Wang, Q; Wang, X L; Wang, Z M; Weber, M; Wilkens, H; Wynhoff, S; Xia, L; Xu, Z Z; Yamamoto, J; Yang, B Z; Yang, C G; Yang, H J; Yang, M; Yeh, S C; Zalite, A; Zalite, Yu; Zhang, Z P; Zhao, J; Zhu, G Y; Zhu, R Y; Zhuang, H L; Zichichi, A; Zimmermann, B; Zöller, M

2005-01-01

Data collected at LEP at centre-of-mass energies \\sqrt(s) = 189 - 209 GeV are used to study correlations of the spin of W bosons using e+e- -> W+W- -> lnqq~ events. Spin correlations are favoured by data, and found to agree with the Standard Model predictions. In addition, correlations between the W-boson decay planes are studied in e+e- -> W+W- -> lnqq~ and e+e- -> W+W- -> qq~qq~ events. Decay-plane correlations, consistent with zero and with the Standard Model predictions, are measured.

Perpendicular magnetic anisotropy in Co{sub X}Pd{sub 100−X} alloys for magnetic tunnel junctions

Energy Technology Data Exchange (ETDEWEB)

Clark, B.D.; Natarajarathinam, A.; Tadisina, Z.R. [Center for Materials for Information Technology, University of Alabama, Tuscaloosa, AL 35487 (United States); Chen, P.J.; Shull, R.D. [National Institute of Standards and Technology, Gaithersburg, MD 20899 (United States); Gupta, S., E-mail: Sgupta@eng.ua.edu [Center for Materials for Information Technology, University of Alabama, Tuscaloosa, AL 35487 (United States)

2017-08-15

Highlights: • CoPd alloy perpendicular anisotropy dependent on composition and thickness. • CIPT results show that TMR tracks with PMA of CoPd. • Potential replacement for Co/Pd multilayers. - Abstract: CoFeB/MgO-based perpendicular magnetic tunnel junctions (p-MTJ’s) with high anisotropy and low damping are critical for spin-torque transfer random access memory (STT-RAM). Most schemes of making the pinned CoFeB fully perpendicular require ferrimagnets with high damping constants, a high temperature-grown L1{sub 0} alloy, or an overly complex multilayered synthetic antiferromagnet (SyAF). We report a compositional study of perpendicular Co{sub x}Pd alloy-pinned Co{sub 20}Fe{sub 60}B{sub 20}/MgO based MTJ stacks, grown at moderate temperatures in a planetary deposition system. The perpendicular anisotropy of the Co{sub x}Pd alloy films can be tuned based on the layer thickness and composition. The films were characterized by alternating gradient magnetometry (AGM), energy-dispersive X-rays (EDX), and X-ray diffraction (XRD). Current-in-plane tunneling (CIPT) measurements have also been performed on the compositionally varied Co{sub x}Pd MTJ stacks. The Co{sub x}Pd alloy becomes fully perpendicular at approximately x = 30% (atomic fraction) Co. Full-film MTJ stacks of Si/SiO{sub 2}/MgO (13)/Co{sub X}Pd{sub 100−x} (50)/Ta (0.3)/CoFeB (1)/MgO (1.6)/CoFeB (1)/Ta (5)/Ru (10), with the numbers enclosed in parentheses being the layer thicknesses in nm, were sputtered onto thermally oxidized silicon substrates and in-situ lamp annealed at 400 °C for 5 min. CIPT measurements indicate that the highest TMR is observed for the CoPd composition with the highest perpendicular magnetic anisotropy.

Liquid metal flows in manifolds and expansions of insulating rectangular ducts in the plane perpendicular to a strong magnetic field

International Nuclear Information System (INIS)

Molokov, S.

1994-01-01

It is demonstrated the flow pattern in basic insulating 3-D geometries for the actual and for more advanced liquid-metal blanket concepts and discussed the ways to avoid pressure losses caused by flow redistribution. Flows in several geometries, such as symmetric and non-symmetric 180 turns with and without manifolds, sharp elbows, sharp and linear expansions with and without manifolds, T-junction, etc., have been calculated. They demonstrate high reliability of poloidal concepts of liquid-metal blankets, since they guarantee uniform conditions for heat transfer. If changes of the duct cross-section occur in the plane perpendicular to the magnetic field (ideally a coolant should flow always in the radial-poloidal plane) the disturbances are local and the slug velocity profile is reached roughly at the distance equivalent to one duct width from the manifolds, expansions, etc. The effects of inertia in these flows are unimportant for the determination of the pressure drop and mean velocity profiles in the core of the flow but may favour heat transfer characteristics via instabilities and strongly anisotropic turbulence. (orig./HP) [de

Gate-Driven Pure Spin Current in Graphene

Science.gov (United States)

Lin, Xiaoyang; Su, Li; Si, Zhizhong; Zhang, Youguang; Bournel, Arnaud; Zhang, Yue; Klein, Jacques-Olivier; Fert, Albert; Zhao, Weisheng

2017-09-01

The manipulation of spin current is a promising solution for low-power devices beyond CMOS. However, conventional methods, such as spin-transfer torque or spin-orbit torque for magnetic tunnel junctions, suffer from large power consumption due to frequent spin-charge conversions. An important challenge is, thus, to realize long-distance transport of pure spin current, together with efficient manipulation. Here, the mechanism of gate-driven pure spin current in graphene is presented. Such a mechanism relies on the electrical gating of carrier-density-dependent conductivity and spin-diffusion length in graphene. The gate-driven feature is adopted to realize the pure spin-current demultiplexing operation, which enables gate-controllable distribution of the pure spin current into graphene branches. Compared with the Elliott-Yafet spin-relaxation mechanism, the D'yakonov-Perel spin-relaxation mechanism results in more appreciable demultiplexing performance. The feature of the pure spin-current demultiplexing operation will allow a number of logic functions to be cascaded without spin-charge conversions and open a route for future ultra-low-power devices.

Anisotropic in-plane spin splitting in an asymmetric (001 GaAs/AlGaAs quantum well

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Zhang Xiuwen

2011-01-01

Full Text Available Abstract The in-plane spin splitting of conduction-band electron has been investigated in an asymmetric (001 GaAs/Al x Ga1-x As quantum well by time-resolved Kerr rotation technique under a transverse magnetic field. The distinctive anisotropy of the spin splitting was observed while the temperature is below approximately 200 K. This anisotropy emerges from the combined effect of Dresselhaus spin-orbit coupling plus asymmetric potential gradients. We also exploit the temperature dependence of spin-splitting energy. Both the anisotropy of spin splitting and the in-plane effective g-factor decrease with increasing temperature. PACS: 78.47.jm, 71.70.Ej, 75.75.+a, 72.25.Fe,

Dynamics of magnetization in ferromagnet with spin-transfer torque

Science.gov (United States)

Li, Zai-Dong; He, Peng-Bin; Liu, Wu-Ming

2014-11-01

We review our recent works on dynamics of magnetization in ferromagnet with spin-transfer torque. Driven by constant spin-polarized current, the spin-transfer torque counteracts both the precession driven by the effective field and the Gilbert damping term different from the common understanding. When the spin current exceeds the critical value, the conjunctive action of Gilbert damping and spin-transfer torque leads naturally the novel screw-pitch effect characterized by the temporal oscillation of domain wall velocity and width. Driven by space- and time-dependent spin-polarized current and magnetic field, we expatiate the formation of domain wall velocity in ferromagnetic nanowire. We discuss the properties of dynamic magnetic soliton in uniaxial anisotropic ferromagnetic nanowire driven by spin-transfer torque, and analyze the modulation instability and dark soliton on the spin wave background, which shows the characteristic breather behavior of the soliton as it propagates along the ferromagnetic nanowire. With stronger breather character, we get the novel magnetic rogue wave and clarify its formation mechanism. The generation of magnetic rogue wave mainly arises from the accumulation of energy and magnons toward to its central part. We also observe that the spin-polarized current can control the exchange rate of magnons between the envelope soliton and the background, and the critical current condition is obtained analytically. At last, we have theoretically investigated the current-excited and frequency-adjusted ferromagnetic resonance in magnetic trilayers. A particular case of the perpendicular analyzer reveals that the ferromagnetic resonance curves, including the resonant location and the resonant linewidth, can be adjusted by changing the pinned magnetization direction and the direct current. Under the control of the current and external magnetic field, several magnetic states, such as quasi-parallel and quasi-antiparallel stable states, out-of-plane

Enhanced Spin-Orbit Torque via Modulation of Spin Current Absorption

KAUST Repository

Qiu, Xuepeng

2016-11-18

The magnitude of spin-orbit torque (SOT), exerted to a ferromagnet (FM) from an adjacent heavy metal (HM), strongly depends on the amount of spin current absorbed in the FM. We exploit the large spin absorption at the Ru interface to manipulate the SOTs in HM/FM/Ru multilayers. While the FM thickness is smaller than its spin dephasing length of 1.2 nm, the top Ru layer largely boosts the absorption of spin currents into the FM layer and substantially enhances the strength of SOT acting on the FM. Spin-pumping experiments induced by ferromagnetic resonance support our conclusions that the observed increase in the SOT efficiency can be attributed to an enhancement of the spin-current absorption. A theoretical model that considers both reflected and transmitted mixing conductances at the two interfaces of FM is developed to explain the results.

Spin-independent transparency of pure spin current at normal/ferromagnetic metal interface

Science.gov (United States)

Hao, Runrun; Zhong, Hai; Kang, Yun; Tian, Yufei; Yan, Shishen; Liu, Guolei; Han, Guangbing; Yu, Shuyun; Mei, Liangmo; Kang, Shishou

2018-03-01

The spin transparency at the normal/ferromagnetic metal (NM/FM) interface was studied in Pt/YIG/Cu/FM multilayers. The spin current generated by the spin Hall effect (SHE) in Pt flows into Cu/FM due to magnetic insulator YIG blocking charge current and transmitting spin current via the magnon current. Therefore, the nonlocal voltage induced by an inverse spin Hall effect (ISHE) in FM can be detected. With the magnetization of FM parallel or antiparallel to the spin polarization of pure spin currents ({{\\boldsymbol{σ }}}sc}), the spin-independent nonlocal voltage is induced. This indicates that the spin transparency at the Cu/FM interface is spin-independent, which demonstrates that the influence of spin-dependent electrochemical potential due to spin accumulation on the interfacial spin transparency is negligible. Furthermore, a larger spin Hall angle of Fe20Ni80 (Py) than that of Ni is obtained from the nonlocal voltage measurements. Project supported by the National Basic Research Program of China (Grant No. 2015CB921502), the National Natural Science Foundation of China (Grant Nos. 11474184 and 11627805), the 111 Project, China (Grant No. B13029), and the Fundamental Research Funds of Shandong University, China.

Magnetism reflectometer study shows LiF layers improve efficiency in spin valve devices

Energy Technology Data Exchange (ETDEWEB)

Bardoel, Agatha A [ORNL; Lauter, Valeria [ORNL; Szulczewski, Greg J [ORNL

2012-01-01

magnetic layer through the organic semiconductor in the spin valve and enhancing the overall properties of the system. In related work the magnetic properties of the cobalt film and the permalloy Ni{sub 80}Fe{sub 20} were characterized. Cobalt in particular needed attention, as it cannot be grown epitaxially (i.e., deposited) on an organic semiconductor film. Cobalt becomes polycrystalline or amorphous, and this affects its magnetic properties. The data from the first experiment showed that the cobalt layer in the system 'did not have typical magnetic properties,' Lauter said. 'The results showed that the cobalt had low magnetization. To improve the efficiency, the cobalt magnetization should be much higher. So this experiment helped us to improve the growth conditions and to get a cobalt layer with better magnetic properties.' In a subsequent experiment the researchers increased the magnetization of the cobalt, and a follow-up paper is in progress.

Excitation of coherent propagating spin waves by pure spin currents.

Science.gov (United States)

Demidov, Vladislav E; Urazhdin, Sergei; Liu, Ronghua; Divinskiy, Boris; Telegin, Andrey; Demokritov, Sergej O

2016-01-28

Utilization of pure spin currents not accompanied by the flow of electrical charge provides unprecedented opportunities for the emerging technologies based on the electron's spin degree of freedom, such as spintronics and magnonics. It was recently shown that pure spin currents can be used to excite coherent magnetization dynamics in magnetic nanostructures. However, because of the intrinsic nonlinear self-localization effects, magnetic auto-oscillations in the demonstrated devices were spatially confined, preventing their applications as sources of propagating spin waves in magnonic circuits using these waves as signal carriers. Here, we experimentally demonstrate efficient excitation and directional propagation of coherent spin waves generated by pure spin current. We show that this can be achieved by using the nonlocal spin injection mechanism, which enables flexible design of magnetic nanosystems and allows one to efficiently control their dynamic characteristics.

SU-C-18C-02: Specifcation of X-Ray Projection Angles Which Are Aligned with the Aortic Valve Plane From a Planar Image of a Valvuloplasty Balloon Inflated Across the Aortic Valve

Energy Technology Data Exchange (ETDEWEB)

Fetterly, K; Mathew, V [Mayo Clinic, Rochester, MN (United States)

2014-06-01

Purpose: Transcatheter aortic valve replacement (TAVR) procedures provide a method to implant a prosthetic aortic valve via a minimallyinvasive, catheter-based procedure. TAVR procedures require use of interventional fluoroscopy c-arm projection angles which are aligned with the aortic valve plane to minimize prosthetic valve positioning error due to x-ray imaging parallax. The purpose of this work is to calculate the continuous range of interventional fluoroscopy c-arm projection angles which are aligned with the aortic valve plane from a single planar image of a valvuloplasty balloon inflated across the aortic valve. Methods: Computational methods to measure the 3D angular orientation of the aortic valve were developed. Required inputs include a planar x-ray image of a known valvuloplasty balloon inflated across the aortic valve and specifications of x-ray imaging geometry from the DICOM header of the image. A-priori knowledge of the species-specific typical range of aortic orientation is required to specify the sign of the angle of the long axis of the balloon with respect to the x-ray beam. The methods were validated ex-vivo and in a live pig. Results: Ex-vivo experiments demonstrated that the angular orientation of a stationary inflated valvuloplasty balloon can be measured with precision less than 1 degree. In-vivo pig experiments demonstrated that cardiac motion contributed to measurement variability, with precision less than 3 degrees. Error in specification of x-ray geometry directly influences measurement accuracy. Conclusion: This work demonstrates that the 3D angular orientation of the aortic valve can be calculated precisely from a planar image of a valvuloplasty balloon inflated across the aortic valve and known x-ray geometry. This method could be used to determine appropriate c-arm angular projections during TAVR procedures to minimize x-ray imaging parallax and thereby minimize prosthetic valve positioning errors.

SU-C-18C-02: Specifcation of X-Ray Projection Angles Which Are Aligned with the Aortic Valve Plane From a Planar Image of a Valvuloplasty Balloon Inflated Across the Aortic Valve

International Nuclear Information System (INIS)

Fetterly, K; Mathew, V

2014-01-01

Purpose: Transcatheter aortic valve replacement (TAVR) procedures provide a method to implant a prosthetic aortic valve via a minimallyinvasive, catheter-based procedure. TAVR procedures require use of interventional fluoroscopy c-arm projection angles which are aligned with the aortic valve plane to minimize prosthetic valve positioning error due to x-ray imaging parallax. The purpose of this work is to calculate the continuous range of interventional fluoroscopy c-arm projection angles which are aligned with the aortic valve plane from a single planar image of a valvuloplasty balloon inflated across the aortic valve. Methods: Computational methods to measure the 3D angular orientation of the aortic valve were developed. Required inputs include a planar x-ray image of a known valvuloplasty balloon inflated across the aortic valve and specifications of x-ray imaging geometry from the DICOM header of the image. A-priori knowledge of the species-specific typical range of aortic orientation is required to specify the sign of the angle of the long axis of the balloon with respect to the x-ray beam. The methods were validated ex-vivo and in a live pig. Results: Ex-vivo experiments demonstrated that the angular orientation of a stationary inflated valvuloplasty balloon can be measured with precision less than 1 degree. In-vivo pig experiments demonstrated that cardiac motion contributed to measurement variability, with precision less than 3 degrees. Error in specification of x-ray geometry directly influences measurement accuracy. Conclusion: This work demonstrates that the 3D angular orientation of the aortic valve can be calculated precisely from a planar image of a valvuloplasty balloon inflated across the aortic valve and known x-ray geometry. This method could be used to determine appropriate c-arm angular projections during TAVR procedures to minimize x-ray imaging parallax and thereby minimize prosthetic valve positioning errors

Electric-field assisted spin torque nano-oscillator and binary frequency shift keying modulation

Science.gov (United States)

Zhang, Xiangli; Chen, Hao-Hsuan; Zhang, Zongzhi; Liu, Yaowen

2018-04-01

Electric-controlled magnetization precession introduces technologically relevant possibility for developing spin torque nano-oscillators (STNO) with potential applications in microwave emission. Using the perpendicularly magnetized magnetic tunnel junction (MTJ), we show that the magnetization oscillation frequency can be tuned by the co-action of electric field and spin polarized current. The dynamical phase diagram of MTJ-based STNO is analytically predicted through coordinate transformation from the laboratory frame to the rotation frame, by which the nonstationary out-of-plane magnetization precession process is therefore transformed into the stationary process in the rotation frame. Furthermore, using this STNO as a microwave source, we numerically demonstrate that the bit signal can be transmitted by a binary frequency shift keying (BFSK) modulation technique. The BFSK scheme shows good modulation features with no transient state.

Spin currents and filtering behavior in zigzag graphene nanoribbons with adsorbed molybdenum chains

International Nuclear Information System (INIS)

García-Fuente, A; Gallego, L J; Vega, A

2015-01-01

By means of density-functional-theoretic calculations, we investigated the structural, electronic and transport properties of hydrogen-passivated zigzag graphene nanoribbons (ZGNRs) on which a one-atom-thick Mo chain was adsorbed (with or without one or two missing atoms), or in which the passivating hydrogen atoms were replaced by Mo atoms. Mo-passivated ZGNRs proved to be nonmagnetic. ZGNRs with an adsorbed defect-free Mo chain were most stable with the Mo atoms forming dimers above edge bay sites, which suppressed the magnetic moments of the C atoms in that half of the ribbon; around the Fermi level of these systems, each spin component had a transmission channel via the Mo sp z band and one had an additional channel created by polarization of the ZGNR π * band, leading to a net spin current. The absence of an Mo dimer from an Mo chain adsorbed at the ZGNR edge made the system a perfect spin filter at low voltage bias by suppressing the Mo sp z band channels. Thus this last kind of hybrid system is a potential spin valve. (paper)

Quantitative characterization of spin-orbit torques in Pt/Co/Pt/Co/Ta/BTO heterostructures due to the magnetization azimuthal angle dependence

Science.gov (United States)

Engel, Christian; Goolaup, Sarjoosing; Luo, Feilong; Lew, Wen Siang

2017-08-01

Substantial understanding of spin-orbit interactions in heavy-metal (HM)/ferromagnet (FM) heterostructures is crucial in developing spin-orbit torque (SOT) spintronics devices utilizing spin Hall and Rashba effects. Though the study of SOT effective field dependence on the out-of-plane magnetization angle has been relatively extensive, the understanding of in-plane magnetization angle dependence remains unknown. Here, we analytically propose a method to compute the SOT effective fields as a function of the in-plane magnetization angle using the harmonic Hall technique in perpendicular magnetic anisotropy (PMA) structures. Two different samples with PMA, a Pt /Co /Pt /Co /Ta /BaTi O3 (BTO) test sample and a Pt/Co/Pt/Co/Ta reference sample, are studied using the derived formula. Our measurements reveal that only the dampinglike field of the test sample with a BTO capping layer exhibits an in-plane magnetization angle dependence, while no angular dependence is found in the reference sample. The presence of the BTO layer in the test sample, which gives rise to a Rashba effect at the interface, is ascribed as the source of the angular dependence of the dampinglike field.

Spin effects in nonlinear Compton scattering in a plane-wave laser pulse

International Nuclear Information System (INIS)

Boca, Madalina; Dinu, Victor; Florescu, Viorica

2012-01-01

We study theoretically the electron angular and energy distribution in the non-linear Compton effect in a finite plane-wave laser pulse. We first present analytical and numerical results for unpolarized electrons (described by a Volkov solution of the Dirac equation), in comparison with those corresponding to a spinless particle (obeying the Klein–Gordon equation). Then, in the spin 1/2 case, we include results for the spin flip probability. The regime in which the spin effects are negligible, i.e. the results for the unpolarized spin 1/2 particle coincide practically with those for the spinless particle, is the same as the regime in which the emitted radiation is well described by classical electrodynamics.

Investigation of the spin Seebeck effect and anomalous Nernst effect in a bulk carbon material

Science.gov (United States)

Wongjom, Poramed; Pinitsoontorn, Supree

2018-03-01

Since the discovery of the spin Seebeck effect (SSE) in 2008, it has become one of the most active topics in the spin caloritronics research field. It opened up a new way to create the spin current by a combination of magnetic fields and heat. The SSE was observed in many kinds of materials including metallic, semiconductor, or insulating magnets, as well as non-magnetic materials. On the other hand, carbon-based materials have become one of the most exciting research areas recently due to its low cost, abundance and some exceptional functionalities. In this work, we have investigated the possibility of the SSE in bulk carbon materials for the first time. Thin platinum film (Pt), coated on the smoothened surface of the bulk carbon, was used as the spin detector via the inverse spin Hall effect (ISHE). The experiment for observing longitudinal SSE in the bulk carbon was set up by applying a magnetic field up to 30 kOe to the sample with the direction perpendicular to the applied temperature gradient. The induced voltage from the SSE was extracted. However, for conductive materials, e.g. carbon, the voltage signal under this set up could be a combination of the SSE and the anomalous Nernst effect (ANE). Therefore, two measurement configurations were carried out, i.e. the in-plane magnetization (IM), and the perpendicular-to-plane magnetization (PM). For the IM configuration, the SSE + ANE signals were detected where as the only ANE signal existed in the PM configuration. The results showed that there were the differences between the voltage signals from the IM and PM configurations implying the possibility of the SSE in the bulk carbon material. Moreover, it was found that the difference in the IM and PM signals was a function of the magnetic field strength, temperature difference, and measurement temperature. Although the magnitude of the possible SSE voltage in this experiment was rather low (less than 0.5 μV at 50 K), this research showed that potential of using

Spin injection and transport in semiconductor and metal nanostructures

Science.gov (United States)

Zhu, Lei

In this thesis we investigate spin injection and transport in semiconductor and metal nanostructures. To overcome the limitation imposed by the low efficiency of spin injection and extraction and strict requirements for retention of spin polarization within the semiconductor, novel device structures with additional logic functionality and optimized device performance have been developed. Weak localization/antilocalization measurements and analysis are used to assess the influence of surface treatments on elastic, inelastic and spin-orbit scatterings during the electron transport within the two-dimensional electron layer at the InAs surface. Furthermore, we have used spin-valve and scanned probe microscopy measurements to investigate the influence of sulfur-based surface treatments and electrically insulating barrier layers on spin injection into, and spin transport within, the two-dimensional electron layer at the surface of p-type InAs. We also demonstrate and analyze a three-terminal, all-electrical spintronic switching device, combining charge current cancellation by appropriate device biasing and ballistic electron transport. The device yields a robust, electrically amplified spin-dependent current signal despite modest efficiency in electrical injection of spin-polarized electrons. Detailed analyses provide insight into the advantages of ballistic, as opposed to diffusive, transport in device operation, as well as scalability to smaller dimensions, and allow us to eliminate the possibility of phenomena unrelated to spin transport contributing to the observed device functionality. The influence of the device geometry on magnetoresistance of nanoscale spin-valve structures is also demonstrated and discussed. Shortcomings of the simplified one-dimensional spin diffusion model for spin valve are elucidated, with comparison of the thickness and the spin diffusion length in the nonmagnetic channel as the criterion for validity of the 1D model. Our work contributes

Enhancement of spin Hall effect induced torques for current-driven magnetic domain wall motion: Inner interface effect

KAUST Repository

Bang, Do; Yu, Jiawei; Qiu, Xuepeng; Wang, Yi; Awano, Hiroyuki; Manchon, Aurelien; Yang, Hyunsoo

2016-01-01

We investigate the current-induced domain wall motion in perpendicular magnetized Tb/Co wires with structure inversion asymmetry and different layered structures. We find that the critical current density to drive domain wall motion strongly depends on the layered structure. The lowest critical current density ∼15MA/cm2 and the highest slope of domain wall velocity curve are obtained for the wire having thin Co sublayers and more inner Tb/Co interfaces, while the largest critical current density ∼26MA/cm2 required to drive domain walls is observed in the Tb-Co alloy magnetic wire. It is found that the Co/Tb interface contributes negligibly to Dzyaloshinskii-Moriya interaction, while the effective spin-orbit torque strongly depends on the number of Tb/Co inner interfaces (n). An enhancement of the antidamping torques by extrinsic spin Hall effect due to Tb rare-earth impurity-induced skew scattering is suggested to explain the high efficiency of current-induced domain wall motion.

Enhancement of spin Hall effect induced torques for current-driven magnetic domain wall motion: Inner interface effect

KAUST Repository

Bang, Do

2016-05-23

We investigate the current-induced domain wall motion in perpendicular magnetized Tb/Co wires with structure inversion asymmetry and different layered structures. We find that the critical current density to drive domain wall motion strongly depends on the layered structure. The lowest critical current density ∼15MA/cm2 and the highest slope of domain wall velocity curve are obtained for the wire having thin Co sublayers and more inner Tb/Co interfaces, while the largest critical current density ∼26MA/cm2 required to drive domain walls is observed in the Tb-Co alloy magnetic wire. It is found that the Co/Tb interface contributes negligibly to Dzyaloshinskii-Moriya interaction, while the effective spin-orbit torque strongly depends on the number of Tb/Co inner interfaces (n). An enhancement of the antidamping torques by extrinsic spin Hall effect due to Tb rare-earth impurity-induced skew scattering is suggested to explain the high efficiency of current-induced domain wall motion.

Measurements of spin parameters in p-p elastic scattering at 6 GeV/c

International Nuclear Information System (INIS)

Linn, S.L.; Perlmutter, A.; Crosbie, E.A.; Ratner, L.G.; Schultz, P.F.; O'Fallon, J.R.; Cameron, P.R.; Crabb, D.G.; Fernow, R.C.; Hansen, P.H.; Krisch, A.D.; Salthouse, A.J.; Sandler, B.; Shima, T.; Terwilliger, K.M.

1982-01-01

We measured the differential cross section for proton-proton elastic scattering in 6 GeV/c, with both initial spins oriented normal to the scattering plane. The analyzing power A shows significant structure with a large broad peak reaching about 24% near P/sub perpendicular/ 2 = 1.6 (GeV/c) 2 . The spin-spin correlation parameter A/sub n/n exhibits more dramatic structure, with a small but very sharp peak rising rapidly to about 13% at 90 0 /sub tsc.m./. This sharp peak may be caused by particle-identity effects

Spin valve-like magnetic tunnel diode exhibiting giant positive junction magnetoresistance at low temperature in Co2MnSi/SiO2/p-Si heterostructure

Science.gov (United States)

Maji, Nilay; Kar, Uddipta; Nath, T. K.

2018-02-01

The rectifying magnetic tunnel diode has been fabricated by growing Co2MnSi (CMS) Heusler alloy film carefully on a properly cleaned p-Si (100) substrate with the help of electron beam physical vapor deposition technique and its structural, electrical and magnetic properties have been experimentally investigated in details. The electronic- and magneto-transport properties at various isothermal conditions have been studied in the temperature regime of 78-300 K. The current-voltage ( I- V) characteristics of the junction show an excellent rectifying magnetic tunnel diode-like behavior throughout that temperature regime. The current ( I) across the junction has been found to decrease with the application of a magnetic field parallel to the plane of the CMS film clearly indicating positive junction magnetoresistance (JMR) of the heterostructure. When forward dc bias is applied to the heterostructure, the I- V characteristics are highly influenced on turning on the field B = 0.5 T at 78 K, and the forward current reduces abruptly (99.2% current reduction at 3 V) which is nearly equal to the order of the magnitude of the current observed in the reverse bias. Hence, our Co2MnSi/SiO2/p-Si heterostructure can perform in off ( I off)/on ( I on) states with the application of non-zero/zero magnetic field like a spin valve at low temperature (78 K).

Perpendicular magnetic recording-Its development and realization

Energy Technology Data Exchange (ETDEWEB)

Iwasaki, Shun-ichi, E-mail: iwasaki@tohtech.ac.jp [Tohoku Institute of Technology, 35-1 Yagiyamakasumi-cho, Taihaku-ku, Sendai 982-8577 (Japan)

2012-02-15

Development of perpendicular magnetic recording is summarized along with learning from the research study. The early stage of perpendicular recording was conducted with the research philosophy of complementarity between perpendicular and horizontal recordings. Although present production of the perpendicular recording HDDs exceeds 600 million per year, development of perpendicular recording experienced the valley of death in the 1990s. The difficult period was overcome by the collaboration system of industrial and academic communities. The research on perpendicular recording brought about development of new research model as well as the historical view of the development of technology and innovation. The huge influence of perpendicular recording on society also taught us the relationship between science and technology with culture and civilization. - Research Highlights: > Discovery of circular magnetization led to idea of perpendicular recording. > SPT head and Co-Cr media were realized for practical perpendicular recording. > The complementarity between perpendicular and in-plane recording helped progress. > Death valley of research has been overcome by cooperation with potent companies. > Present mass production of HDDs is making a new civilization of the society.

Current-driven parametric resonance in magnetic multilayers

International Nuclear Information System (INIS)

Wang, C; Seinige, H; Tsoi, M

2013-01-01

Current-induced parametric excitations were observed in point-contact spin-valve nanodevices. Point contacts were used to inject high densities of direct and microwave currents into spin valves, thus producing oscillating spin-transfer and Oersted-field torques on magnetic moments. The resulting magnetodynamics were observed electrically by measuring rectified voltage signals across the contact. In addition to the spin-torque-driven ferromagnetic resonance we observe doubled-frequency signals which correspond to the parametric excitation of magnetic moments. Numerical simulations suggest that while both spin-transfer torque and ac Oersted field contribute to the parametrically excited dynamics, the ac spin torque dominates, and dc spin torque can switch it on and off. The dc bias dependence of the parametric resonance signal enabled the mapping of instability regions characterizing the nonlinearity of the oscillation. (paper)

Spin splitting generated in a Y-shaped semiconductor nanostructure with a quantum point contact

International Nuclear Information System (INIS)

Wójcik, P.; Adamowski, J.; Wołoszyn, M.; Spisak, B. J.

2015-01-01

We have studied the spin splitting of the current in the Y-shaped semiconductor nanostructure with a quantum point contact (QPC) in a perpendicular magnetic field. Our calculations show that the appropriate tuning of the QPC potential and the external magnetic field leads to an almost perfect separation of the spin-polarized currents: electrons with opposite spins flow out through different output branches. The spin splitting results from the joint effect of the QPC, the spin Zeeman splitting, and the electron transport through the edge states formed in the nanowire at the sufficiently high magnetic field. The Y-shaped nanostructure can be used to split the unpolarized current into two spin currents with opposite spins as well as to detect the flow of the spin current. We have found that the separation of the spin currents is only slightly affected by the Rashba spin-orbit coupling. The spin-splitter device is an analogue of the optical device—the birefractive crystal that splits the unpolarized light into two beams with perpendicular polarizations. In the magnetic-field range, in which the current is carried through the edges states, the spin splitting is robust against the spin-independent scattering. This feature opens up a possibility of the application of the Y-shaped nanostructure as a non-ballistic spin-splitter device in spintronics

Spin splitting generated in a Y-shaped semiconductor nanostructure with a quantum point contact

Science.gov (United States)

Wójcik, P.; Adamowski, J.; Wołoszyn, M.; Spisak, B. J.

2015-07-01

We have studied the spin splitting of the current in the Y-shaped semiconductor nanostructure with a quantum point contact (QPC) in a perpendicular magnetic field. Our calculations show that the appropriate tuning of the QPC potential and the external magnetic field leads to an almost perfect separation of the spin-polarized currents: electrons with opposite spins flow out through different output branches. The spin splitting results from the joint effect of the QPC, the spin Zeeman splitting, and the electron transport through the edge states formed in the nanowire at the sufficiently high magnetic field. The Y-shaped nanostructure can be used to split the unpolarized current into two spin currents with opposite spins as well as to detect the flow of the spin current. We have found that the separation of the spin currents is only slightly affected by the Rashba spin-orbit coupling. The spin-splitter device is an analogue of the optical device—the birefractive crystal that splits the unpolarized light into two beams with perpendicular polarizations. In the magnetic-field range, in which the current is carried through the edges states, the spin splitting is robust against the spin-independent scattering. This feature opens up a possibility of the application of the Y-shaped nanostructure as a non-ballistic spin-splitter device in spintronics.

Domain wall oscillations induced by spin torque in magnetic nanowires

Energy Technology Data Exchange (ETDEWEB)

Sbiaa, R., E-mail: rachid@squ.edu.om [Department of Physics, Sultan Qaboos University, P.O. Box 36, PC 123, Muscat (Oman); Chantrell, R. W. [Department of Physics, University of York, York YO10 5DD (United Kingdom)

2015-02-07

Using micromagnetic simulations, the effects of the non-adiabatic spin torque (β) and the geometry of nanowires on domain wall (DW) dynamics are investigated. For the case of in-plane anisotropy nanowire, it is observed that the type of DW and its dynamics depends on its dimension. For a fixed length, the critical switching current decreases almost exponentially with the width W, while the DW speed becomes faster for larger W. For the case of perpendicular anisotropy nanowire, it was observed that DW dynamics depends strongly on β. For small values of β, oscillations of DW around the center of nanowire were revealed even after the current is switched off. In addition to nanowire geometry and intrinsic material properties, β could provide a way to control DW dynamics.

Perpendicular STT_RAM cell in 8 nm technology node using Co1/Ni3(1 1 1)||Gr2||Co1/Ni3(1 1 1) structure as magnetic tunnel junction

Science.gov (United States)

Varghani, Ali; Peiravi, Ali; Moradi, Farshad

2018-04-01

The perpendicular anisotropy Spin-Transfer Torque Random Access Memory (P-STT-RAM) is considered to be a promising candidate for high-density memories. Many distinct advantages of Perpendicular Magnetic Tunnel Junction (P-MTJ) compared to the conventional in-plane MTJ (I-MTJ) such as lower switching current, circular cell shape that facilitates manufacturability in smaller technology nodes, large thermal stability, smaller cell size, and lower dipole field interaction between adjacent cells make it a promising candidate as a universal memory. However, for small MTJ cell sizes, the perpendicular technology requires new materials with high polarization and low damping factor as well as low resistance area product of a P-MTJ in order to avoid a high write voltage as technology is scaled down. A new graphene-based STT-RAM cell for 8 nm technology node that uses high perpendicular magnetic anisotropy cobalt/nickel (Co/Ni) multilayer as magnetic layers is proposed in this paper. The proposed junction benefits from enough Tunneling Magnetoresistance Ratio (TMR), low resistance area product, low write voltage, and low power consumption that make it suitable for 8 nm technology node.

The magnetization dynamics of nano-contact spin-torque vortex oscillators

Science.gov (United States)

Keatley, Paul

The operation of nano-contact (NC) spin-torque vortex oscillators (STVOs) is underpinned by vortex gyration in response to spin-torque delivered by high density current passing through the magnetic layers of a spin valve. Gyration directly beneath the NC yields radio frequency (RF) emission through the giant magnetoresistance (GMR) effect, which can be readily detected electronically. The magnetization dynamics that extend beyond the NC perimeter contribute little to the GMR signal, but are crucial for synchronization of multiple NC-STVOs that share the same spin valve film. In this work time-resolved scanning Kerr microscopy (TRSKM) was used to directly image the extended dynamics of STVOs phase-locked to an injected RF current. In this talk the dynamics of single 250-nm diameter NCs, and a pair of 100-nm diameter NCs, will be presented. In general the Kerr images reveal well-defined localized and far-field dynamics, driven by spin-torque and RF current Oersted fields respectively. The RF frequency, RF Oersted field, direction of an in-plane magnetic field, and equilibrium magnetic state, all influenced the spatial character of the dynamics observed in single NCs. In the pair of NCs, two modes were observed in the RF emission. Kerr images revealed that a vortex was formed beneath each NC and that the mode with enhanced spectral amplitude and line quality appeared to be correlated with two localized regions oscillating with similar amplitude and phase, while a second weaker mode exhibited amplitude and phase differences. This suggests that the RF emission was generated by collective modes of vortex gyration dynamically coupled via magnetization dynamics and dipolar interactions of the shared magnetic layers. Within the constraints of injection locking, this work demonstrates that TRSKM can provide valuable insight into the spatial character and time-evolution of magnetization dynamics generated by NC-STVOs and the conditions that may favor their synchronization

Magneto-Seebeck effect in magnetic tunnel junctions with perpendicular anisotropy

Directory of Open Access Journals (Sweden)

Keyu Ning

2017-01-01

Full Text Available As one invigorated filed of spin caloritronics combining with spin, charge and heat current, the magneto-Seebeck effect has been experimentally and theoretically studied in spin tunneling thin films and nanostructures. Here we analyze the tunnel magneto-Seebeck effect in magnetic tunnel junctions with perpendicular anisotropy (p-MTJs under various measurement temperatures. The large tunnel magneto-Seebeck (TMS ratio up to −838.8% for p-MTJs at 200 K is achieved, with Seebeck coefficient S in parallel and antiparallel states of 6.7 mV/K and 62.9 mV/K, respectively. The temperature dependence of the tunnel magneto-Seebeck can be attributed to the contributing transmission function and electron states at the interface between CoFeB electrode and MgO barrier.

Investigation of Current Induced Spin Polarization in III-V Semiconductor Epilayers

Science.gov (United States)

Luengo-Kovac, Marta

In the development of a semiconductor spintronics device, a thorough understanding of spin dynamics in semiconductors is necessary. In particular, electrical control of electron spins is advantageous for its compatibility with present day electronics. In this thesis, we will discuss the electrical modification of the electron g-factor, which characterizes the strength of the interaction between a spin and a magnetic field, as well as investigate electrically generated spin polarizations as a function of various material parameters. We report on the modification of the electron g-factor by an in-plane electric field in an InGaAs epilayer. We performed external magnetic field scans of the Kerr rotation of the InGaAs film in order to measure the g-factor independently of the spin-orbit fields. The g-factor increases from -0.4473(0.0001) at 0 V/cm to -0.4419( 0.0001) at 50 V/cm applied along the [110] crystal axis. A comparison of temperature and voltage dependent photoluminescence measurements indicate that minimal channel heating occurs at these voltages. Possible explanations for this g-factor modification are discussed, including an increase in the electron temperature that is independent of the lattice temperature and the modification of the donor-bound electron wave function by the electric field. The current-induced spin polarization and momentum-dependent spin-orbit field were measured in InGaAs epilayers with varying indium concentrations and silicon doping densities. Samples with higher indium concentrations and carrier concentrations and lower mobilities were found to have larger electrical spin generation efficiencies. Furthermore, current-induced spin polarization was detected in GaAs epilayers despite the absence of measurable spin-orbit fields, indicating that the spin polarization mechanism is extrinsic. Temperature-dependent measurements of the spin dephasing rates and mobilities were used to characterize the relative strengths of the intrinsic D

PREFACE: Spin Electronics

Science.gov (United States)

Dieny, B.; Sousa, R.; Prejbeanu, L.

2007-04-01

Conventional electronics has in the past ignored the spin on the electron, however things began to change in 1988 with the discovery of giant magnetoresistance in metallic thin film stacks which led to the development of a new research area, so called spin-electronics. In the last 10 years, spin-electronics has achieved a number of breakthroughs from the point of view of both basic science and application. Materials research has led to several major discoveries: very large tunnel magnetoresistance effects in tunnel junctions with crystalline barriers due to a new spin-filtering mechanism associated with the spin-dependent symmetry of the electron wave functions new magnetic tunnelling barriers leading to spin-dependent tunnelling barrier heights and acting as spin-filters magnetic semiconductors with increasingly high ordering temperature. New phenomena have been predicted and observed: the possibility of acting on the magnetization of a magnetic nanostructure with a spin-polarized current. This effect, due to a transfer of angular momentum between the spin polarized conduction electrons and the local magnetization, can be viewed as the reciprocal of giant or tunnel magnetoresistance. It can be used to switch the magnetization of a magnetic nanostructure or to generate steady magnetic excitations in the system. the possibility of generating and manipulating spin current without charge current by creating non-equilibrium local accumulation of spin up or spin down electrons. The range of applications of spin electronics materials and phenomena is expanding: the first devices based on giant magnetoresistance were the magnetoresistive read-heads for computer disk drives. These heads, introduced in 1998 with current-in plane spin-valves, have evolved towards low resistance tunnel magnetoresistice heads in 2005. Besides magnetic recording technology, these very sensitive magnetoresistive sensors are finding applications in other areas, in particular in biology. magnetic

Strain effects on anisotropic magnetoresistance in a nanowire spin valve

Science.gov (United States)

Hossain, Md I.; Maksud, M.; Subramanian, A.; Atulasimha, J.; Bandyopadhyay, S.

2016-11-01

The longitudinal magnetoresistance of a copper nanowire contacted by two cobalt contacts shows broad spin-valve peaks at room temperature. However, when the contacts are slightly heated, the peaks change into troughs which are signature of anisotropic magnetoresistance (AMR). Under heating, the differential thermal expansion of the contacts and the substrate generates a small strain in the cobalt contacts which enhances the AMR effect sufficiently to change the peak into a trough. This shows the extreme sensitivity of AMR to strain. The change in the AMR resistivity coefficient due to strain is estimated to be a few m Ω -m/microstrain.

Fast switching and signature of efficient domain wall motion driven by spin-orbit torques in a perpendicular anisotropy magnetic insulator/Pt bilayer

Science.gov (United States)

Avci, Can Onur; Rosenberg, Ethan; Baumgartner, Manuel; Beran, Lukáš; Quindeau, Andy; Gambardella, Pietro; Ross, Caroline A.; Beach, Geoffrey S. D.

2017-08-01

We report fast and efficient current-induced switching of a perpendicular anisotropy magnetic insulator thulium iron garnet by using spin-orbit torques (SOT) from the Pt overlayer. We first show that, with quasi-DC (10 ms) current pulses, SOT-induced switching can be achieved with an external field as low as 2 Oe, making TmIG an outstanding candidate to realize efficient switching in heterostructures that produce moderate stray fields without requiring an external field. We then demonstrate deterministic switching with fast current pulses (≤20 ns) with an amplitude of ˜1012 A/m2, similar to all-metallic structures. We reveal that, in the presence of an initially nucleated domain, the critical switching current is reduced by up to a factor of five with respect to the fully saturated initial state, implying efficient current-driven domain wall motion in this system. Based on measurements with 2 ns-long pulses, we estimate the domain wall velocity of the order of ˜400 m/s per j = 1012 A/m2.

Photoemission of Bi_{2}Se_{3} with Circularly Polarized Light: Probe of Spin Polarization or Means for Spin Manipulation?

Directory of Open Access Journals (Sweden)

J. Sánchez-Barriga

2014-03-01

Full Text Available Topological insulators are characterized by Dirac-cone surface states with electron spins locked perpendicular to their linear momenta. Recent theoretical and experimental work implied that this specific spin texture should enable control of photoelectron spins by circularly polarized light. However, these reports questioned the so far accepted interpretation of spin-resolved photoelectron spectroscopy. We solve this puzzle and show that vacuum ultraviolet photons (50–70 eV with linear or circular polarization indeed probe the initial-state spin texture of Bi_{2}Se_{3} while circularly polarized 6-eV low-energy photons flip the electron spins out of plane and reverse their spin polarization, with its sign determined by the light helicity. Our photoemission calculations, taking into account the interplay between the varying probing depth, dipole-selection rules, and spin-dependent scattering effects involving initial and final states, explain these findings and reveal proper conditions for light-induced spin manipulation. Our results pave the way for future applications of topological insulators in optospintronic devices.

Perpendicular magnetic anisotropy of amorphous ferromagnetic CoSiB/[Pt,Au] multilayer

International Nuclear Information System (INIS)

Jeong, S.; Yim, H. I.

2012-01-01

Perpendicular magnetic anisotropy is being widely studied as a possible candidate for a high density spin-transfer torque magnetic random access memory. The key issues of a high-density spin-transfer torque magnetic random access memory are decreasing the switching current and the high thermal stability. In order to solve these problems, two approaches are suggested: One is the development a new amorphous ferromagnetic material as a pinned layer for a multilayer with a low saturated magnetization (M s ) value because of the interface roughness between the two layers. The other is a search for the most suitable materials with high perpendicular magnetic anisotropy in order to have high thermal stability. In this work, we present an amorphous ferromagnetic Co 75 Si 15 B 10 material and compare the magnetic properties of a [CoSiB (0.3, 0.4, 0.5 nm)/Pt (1.4 nm)] 5 multilayer and new combinations [CoSiB (0.3, 0.4, 0.5 nm)/Au (1.5 nm)] 5 .

Doppler Velocimetry of Current Driven Spin Helices in a Two-Dimensional Electron Gas

Energy Technology Data Exchange (ETDEWEB)

Yang, Luyi [Univ. of California, Berkeley, CA (United States)

2013-05-17

Spins in semiconductors provide a pathway towards the development of spin-based electronics. The appeal of spin logic devices lies in the fact that the spin current is even under time reversal symmetry, yielding non-dissipative coupling to the electric field. To exploit the energy-saving potential of spin current it is essential to be able to control it. While recent demonstrations of electrical-gate control in spin-transistor configurations show great promise, operation at room temperature remains elusive. Further progress requires a deeper understanding of the propagation of spin polarization, particularly in the high mobility semiconductors used for devices. This dissertation presents the demonstration and application of a powerful new optical technique, Doppler spin velocimetry, for probing the motion of spin polarization at the level of 1 nm on a picosecond time scale. We discuss experiments in which this technique is used to measure the motion of spin helices in high mobility n-GaAs quantum wells as a function of temperature, in-plane electric field, and photoinduced spin polarization amplitude. We find that the spin helix velocity changes sign as a function of wave vector and is zero at the wave vector that yields the largest spin lifetime. This observation is quite striking, but can be explained by the random walk model that we have developed. We discover that coherent spin precession within a propagating spin density wave is lost at temperatures near 150 K. This finding is critical to understanding why room temperature operation of devices based on electrical gate control of spin current has so far remained elusive. We report that, at all temperatures, electron spin polarization co-propagates with the high-mobility electron sea, even when this requires an unusual form of separation of spin density from photoinjected electron density. Furthermore, although the spin packet co-propagates with the two-dimensional electron gas, spin diffusion is strongly

Apparatus and methods for memory using in-plane polarization

Science.gov (United States)

Liu, Junwei; Chang, Kai; Ji, Shuai-Hua; Chen, Xi; Fu, Liang

2018-05-01

A memory device includes a semiconductor layer with an in-plane polarization component switchable between a first direction and a second direction. A writing electrode is employed to apply a writing voltage to the semiconductor layer to change the in-plane polarization component between the first direction and the second direction. A reading electrode is employed to apply a reading voltage to the semiconductor layer to measure a tunneling current substantially perpendicular to the polarization direction of the in-plane polarization component. The directions of the reading voltage and the writing voltage are substantially perpendicular to each other. Therefore, the reading process is non-destructive. Thin films (e.g., one unit cell thick) of ferroelectric material can be used in the memory device to increase the miniaturization of the device.

Tunneling Anomalous and Spin Hall Effects.

Science.gov (United States)

Matos-Abiague, A; Fabian, J

2015-07-31

We predict, theoretically, the existence of the anomalous Hall effect when a tunneling current flows through a tunnel junction in which only one of the electrodes is magnetic. The interfacial spin-orbit coupling present in the barrier region induces a spin-dependent momentum filtering in the directions perpendicular to the tunneling current, resulting in a skew tunneling even in the absence of impurities. This produces an anomalous Hall conductance and spin Hall currents in the nonmagnetic electrode when a bias voltage is applied across the tunneling heterojunction. If the barrier is composed of a noncentrosymmetric material, the anomalous Hall conductance and spin Hall currents become anisotropic with respect to both the magnetization and crystallographic directions, allowing us to separate this interfacial phenomenon from the bulk anomalous and spin Hall contributions. The proposed effect should be useful for proving and quantifying the interfacial spin-orbit fields in metallic and metal-semiconductor systems.

Energy efficient and fast reversal of a fixed skyrmion two-terminal memory with spin current assisted by voltage controlled magnetic anisotropy

Science.gov (United States)

Bhattacharya, Dhritiman; Mamun Al-Rashid, Md; Atulasimha, Jayasimha

2017-10-01

Recent work (P-H Jang et al 2015 Appl. Phys. Lett. 107 202401, J. Sampaio et al 2016 Appl. Phys. Lett. 108 112403) suggests that ferromagnetic reversal with spin transfer torque (STT) requires more current in a system in the presence of Dzyaloshinskii-Moriya interaction (DMI) than switching a typical ferromagnet of the same dimensions and perpendicular magnetic anisotropy (PMA). However, DMI promotes the stabilization of skyrmions and we report that when perpendicular anisotropy is modulated (reduced) for both the skyrmion and ferromagnet, it takes a much smaller current to reverse the fixed skyrmion than to reverse the ferromagnet in the same amount of time, or the skyrmion reverses much faster than the ferromagnet at similar levels of current. We show with rigorous micromagnetic simulations that skyrmion switching proceeds along a different path at very low PMA, which results in a significant reduction in the spin current or time required for reversal. This can offer potential for memory applications where a relatively simple modification of the standard STT-RAM (to include a heavy metal adjacent to the soft magnetic layer and with appropriate design of the tunnel barrier) can lead to an energy efficient and fast magnetic memory device based on the reversal of fixed skyrmions.

Bulk electron spin polarization generated by the spin Hall current

OpenAIRE

Korenev, V. L.

2005-01-01

It is shown that the spin Hall current generates a non-equilibrium spin polarization in the interior of crystals with reduced symmetry in a way that is drastically different from the previously well-known equilibrium polarization during the spin relaxation process. The steady state spin polarization value does not depend on the strength of spin-orbit interaction offering possibility to generate relatively high spin polarization even in the case of weak spin-orbit coupling.

Bulk electron spin polarization generated by the spin Hall current

Science.gov (United States)

Korenev, V. L.

2006-07-01

It is shown that the spin Hall current generates a nonequilibrium spin polarization in the interior of crystals with reduced symmetry in a way that is drastically different from the previously well-known “equilibrium” polarization during the spin relaxation process. The steady state spin polarization value does not depend on the strength of spin-orbit interaction offering possibility to generate relatively high spin polarization even in the case of weak spin-orbit coupling.

Field-controlled spin current in frustrated spin chains

Directory of Open Access Journals (Sweden)

A.K. Kolezhuk

2009-01-01

Full Text Available We study states with spontaneous spin current, emerging in frustrated antiferromagnetic spin-S chains subject to a strong external magnetic field. As a numerical tool, we use a non-Abelian symmetry realization of the density matrix renormalization group. The field dependence of the order parameter and the critical exponents are presented for zigzag chains with S=1/2, 1, 3/2, and 2.

A review on organic spintronic materials and devices: II. Magnetoresistance in organic spin valves and spin organic light emitting diodes

Directory of Open Access Journals (Sweden)

Rugang Geng

2016-09-01

Full Text Available In the preceding review paper, Paper I [Journal of Science: Advanced Materials and Devices 1 (2016 128–140], we showed the major experimental and theoretical studies on the first organic spintronic subject, namely organic magnetoresistance (OMAR in organic light emitting diodes (OLEDs. The topic has recently been of renewed interest as a result of a demonstration of the magneto-conductance (MC that exceeds 1000% at room temperature using a certain type of organic compounds and device operating condition. In this report, we will review two additional organic spintronic devices, namely organic spin valves (OSVs where only spin polarized holes exist to cause magnetoresistance (MR, and spin organic light emitting diodes (spin-OLEDs where both spin polarized holes and electrons are injected into the organic emissive layer to form a magneto-electroluminescence (MEL hysteretic loop. First, we outline the major advances in OSV studies for understanding the underlying physics of the spin transport mechanism in organic semiconductors (OSCs and the spin injection/detection at the organic/ferromagnet interface (spinterface. We also highlight some of outstanding challenges in this promising research field. Second, the first successful demonstration of spin-OLEDs is reviewed. We also discuss challenges to achieve the high performance devices. Finally, we suggest an outlook on the future of organic spintronics by using organic single crystals and aligned polymers for the spin transport layer, and a self-assembled monolayer to achieve more controllability for the spinterface.

Spin transfer torque with spin diffusion in magnetic tunnel junctions

KAUST Repository

Manchon, Aurelien

2012-08-09

Spin transport in magnetic tunnel junctions in the presence of spin diffusion is considered theoretically. Combining ballistic tunneling across the barrier and diffusive transport in the electrodes, we solve the spin dynamics equation in the metallic layers. We show that spin diffusion mixes the transverse spin current components and dramatically modifies the bias dependence of the effective spin transfer torque. This leads to a significant linear bias dependence of the out-of-plane torque, as well as a nonconventional thickness dependence of both spin torque components.

Effect of resistance feedback on spin torque-induced switching of nanomagnets

International Nuclear Information System (INIS)

Garzon, Samir; Webb, Richard A.; Covington, Mark; Kaka, Shehzaad; Crawford, Thomas M.

2009-01-01

In large magnetoresistance devices spin torque-induced changes in resistance can produce GHz current and voltage oscillations which can affect magnetization reversal. In addition, capacitive shunting in large resistance devices can further reduce the current, adversely affecting spin torque switching. Here, we simultaneously solve the Landau-Lifshitz-Gilbert equation with spin torque and the transmission line telegrapher's equations to study the effects of resistance feedback and capacitance on magnetization reversal of both spin valves and magnetic tunnel junctions. While for spin valves parallel (P) to anti-parallel (AP) switching is adversely affected by the resistance feedback due to saturation of the spin torque, in low resistance magnetic tunnel junctions P-AP switching is enhanced. We study the effect of resistance feedback on the switching time of magnetic tunnel junctions, and show that magnetization switching is only affected by capacitive shunting in the pF range.

Magnetoelectric control of spin currents

Energy Technology Data Exchange (ETDEWEB)

Gómez, J. E.; Vargas, J. M.; Avilés-Félix, L.; Butera, A. [Centro Atómico Bariloche, Instituto de Nanociencia y Nanotecnología (CNEA) and Conicet, 8400 Bariloche, Río Negro (Argentina)

2016-06-13

The ability to control the spin current injection has been explored on a hybrid magnetoelectric system consisting of a (011)-cut ferroelectric lead magnesium niobate-lead titanate (PMNT) single crystal, a ferromagnetic FePt alloy, and a metallic Pt. With this PMNT/FePt/Pt structure we have been able to control the magnetic field position or the microwave excitation frequency at which the spin pumping phenomenon between FePt and Pt occurs. We demonstrate that the magnetoelectric heterostructure operating in the L-T (longitudinal magnetized-transverse polarized) mode couples the PMNT crystal to the magnetostrictive FePt/Pt bilayer, displaying a strong magnetoelectric coefficient of ∼140 Oe cm kV{sup −1}. Our results show that this mechanism can be effectively exploited as a tunable spin current intensity emitter and open the possibility to create an oscillating or a bistable switch to effectively manipulate spin currents.

Spin reorientation transition in Co/Au multilayers

Energy Technology Data Exchange (ETDEWEB)

Quispe-Marcatoma, J., E-mail: jquispem@unmsm.edu.pe [Centro Brasileiro de Pesquisas Físicas, Rio de Janeiro 22290-180 (Brazil); Facultad de Ciencias Físicas, Universidad Nacional Mayor de San Marcos, P.O. Box 14-0149, Lima 14, Perú (Peru); Tarazona, H. [Facultad de Ciencias Físicas, Universidad Nacional Mayor de San Marcos, P.O. Box 14-0149, Lima 14, Perú (Peru); Pandey, B. [Centro Brasileiro de Pesquisas Físicas, Rio de Janeiro 22290-180 (Brazil); Department of Applied Science, Symbiosis Institute of Technology, SIU, Lavale, Pune 412 115, India. (India); Sousa, M.A. de [Instituto de Física, Universidade Federal de Goiás, Goiânia 74001-970 (Brazil); Carvalho, M. [Centro Brasileiro de Pesquisas Físicas, Rio de Janeiro 22290-180 (Brazil); Landauro, C.V. [Facultad de Ciencias Físicas, Universidad Nacional Mayor de San Marcos, P.O. Box 14-0149, Lima 14, Perú (Peru); Pelegrini, F. [Instituto de Física, Universidade Federal de Goiás, Goiânia 74001-970 (Brazil); Baggio Saitovitch, E. [Centro Brasileiro de Pesquisas Físicas, Rio de Janeiro 22290-180 (Brazil)

2014-10-01

We report a study about the spin reorientation transition (SRT) from perpendicular easy axis to in-plane easy axis of magnetization in Co/Au multilayers. A series of multilayers of Si/Au(100 Å)/{[Co(t_C_o)/Au(20 Å)]_2_0}/Au(50 Å) family were studied, with Co layer thickness varying between 6 Å to 30 Å. The thickness of the Au layer was chosen large enough in order to minimize the interlayer exchange coupling between Co layers. In such thick Au-layer samples the magnetic properties are mainly the result of competition between interlayer magnetostatic coupling due to stray field, perpendicular magnetic anisotropy and shape anisotropy. The effective anisotropy constant K{sub eff} and the second order anisotropy K{sub 2} were deduced from the fit of the resonant magnetic field obtained from out of plane dependence Ferromagnetic Resonance (FMR) experiments. To study the SRT, we have plotted the phase diagram between K{sub eff} and K{sub 2}. The results show that SRT occurs through the metastable region with K{sub 2} ≤ −½ K{sub eff}, (K{sub eff} > 0). It is interesting to note that FMR shows the coexistence of two modes with different anisotropy for small Co thickness, while for thick Co layers the modes have the same anisotropy. Moreover, in thick Co layer samples, volume and surface spin wave resonance (SWR) modes were also excited by the microwave field, around the perpendicular FMR geometry, giving a clear evidence of a magnetic coupling between the Co layers. - Highlights: • Co/Au multilayers with varying Co layer thickness are prepared by DC-magnetron sputtering. • The spin reorientation transition (SRT) and flipping of magnetic moment are studied. • Effective anisotropy constant (K) and 2nd order anisotropy constant (K{sub 2}) are calculated. • K Vs K{sub 2} plot showed that SRT occurs through the metastable region with K{sub 2} ≤ −½ K, (K > 0). • Ferromagnetic Resonance spectra showed the coexistence of two resonance modes.

Possibility of Cooper-pair formation controlled by multi-terminal spin injection

Science.gov (United States)

Ohnishi, K.; Sakamoto, M.; Ishitaki, M.; Kimura, T.

2018-03-01

A multi-terminal lateral spin valve consisting of three ferromagnetic nanopillars on a Cu/Nb bilayer has been fabricated. We investigated the influence of the spin injection on the superconducting properties at the Cu/Nb interface. The non-local spin valve signal exhibits a clear spin insulation signature due to the superconducting gap of the Nb. The magnitude of the spin signal is found to show the probe configuration dependence. From the careful analysis of the bias current dependence, we found the suppression of the superconductivity due to the exchange interaction between the Cooper pair and accumulated spin plays an important role in the multi-terminal spin injections. We also discuss about the possibility of the Cooper-pair formation due to the spin injection from the two injectors with the anti-parallel alignment.

Spinning test particles in the field of a black hole

Energy Technology Data Exchange (ETDEWEB)

Tod, K P; de Felice, F [Padua Univ. (Italy); Calvani, M [Padua Univ. (Italy). Istituto di Astronomia

1976-08-11

It is studied the motion of spinning test bodies in the gravitational field of a rotating black hole, confining the examination of the pole-dipole approximation and of the special case of motion in the equatorial plane with the spin vector perpendicular to it. The study also provides the locus of the turning points for the equatorial orbits and also the exact limits of validity of the pole-dipole approximation for any given set of particle parameters. The innermost stable circular orbits are studied in details, and it is found that opposite spinning accreting particles are separated by the gravitational field of the black hole and that the fraction of energy ''at infinity'' which can be extracted when the particle spin is opposite to that of the black hole can be as high as 100%.

Transcatheter Pulmonary Valve Replacement: Current State of Art.

Science.gov (United States)

Alkashkari, Wail; Alsubei, Amani; Hijazi, Ziyad M

2018-03-15

The past couple of decades have brought tremendous advances to the field of pediatric and adult congenital heart disease (CHD). Percutaneous valve interventions are now a cornerstone of not just the congenital cardiologist treating patients with congenital heart disease, but also-and numerically more importantly-for adult interventional cardiologists treating patients with acquired heart valve disease. Transcatheter pulmonary valve replacement (tPVR) is one of the most exciting recent developments in the treatment of CHD and has evolved to become an attractive alternative to surgery in patients with right ventricular outflow tract (RVOT) dysfunction. This review aims to summarize (1) the current state of the art for tPVR, (2) the expanding indications, and (3) the technological obstacles to optimizing tPVR. Since its introduction in 2000, more than ten thousands tPVR procedures have been performed worldwide. Although the indications for tPVR have been adapted earlier from those accepted for surgical intervention, they remain incompletely defined. The new imaging modalities give better assessment of cardiac anatomy and function and determine candidacy for the procedure. The procedure has been shown to be feasible and safe when performed in patients who received pulmonary conduit and or bioprosthetic valves between the right ventricle and the pulmonary artery. Fewer selected patients post trans-annular patch repair for tetralogy of Fallot may also be candidates for this technology. Size restrictions of the currently available valves limit deployment in the majority of patients post trans-annular patch repair. Newer valves and techniques are being developed that may help such patients. Refinements and further developments of this procedure hold promise for the extension of this technology to other patient populations.

Solvent Annealing Induced Perpendicular Orientation of Cylindrical Microdomains in Polystyrene-b-poly(4-hydroxyl styrene)/PEG Oligomer Blend Thin Film Made by Spin-coating from Selective Solvent

Energy Technology Data Exchange (ETDEWEB)

Matsutani, Taito; Yamamoto, Katsuhiro, E-mail: yamamoto.katsuhiro@nitech.ac.jp [Department of Materials Science and Technology, Graduate School of Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan)

2011-01-01

The microphase separated structure of PS-b-PHS/PEG blend thin film with thickness of 500 {approx} 600 nm was investigated by grazing incidence small angle X-ray scattering. The thin film was obtained by two different solutions; one was THF which was common good solvent for all components of polymers used here. The other is toluene which was selective solvent for PS and poor-solvent for PHS and PEG. The equilibrium morphology of the block copolymer and blend sample was hexagonally packed cylinder in the bulk and thin film. The structure in the thin film obtained by spin cast from toluene solution was non-equilibrium. After THF vopar annealing of the thin film (cast from toluene), the highly ordered and perpendicular oriented cylindrical structure was obtained. Perpendicular orientation was failure when the thin film sample made by spin cast from THF solution and subsequent THF vapor annealing. The perpendicular nano-holes were fabricated after removing PEG oligomer by washing with water.

Electrical detection of spin current and spin relaxation in nonmagnetic semiconductors

International Nuclear Information System (INIS)

Miah, M Idrish

2008-01-01

We report an electrical method for the detection of spin current and spin relaxation in nonmagnetic semiconductors. Optically polarized spins are dragged by an electric field in GaAs. We use the anomalous Hall effect for the detection of spin current and spin relaxation. It is found that the effect depends on the electric field and doping density as well as on temperature, but not on the excitation power. A calculation for the effect is performed using the measured spin polarization by a pump-probe experiment. The results are also discussed in comparison with a quantitative evaluation of the spin lifetimes of the photogenerated electrons under drift in GaAs

Electrical detection of spin current and spin relaxation in nonmagnetic semiconductors

Energy Technology Data Exchange (ETDEWEB)

Miah, M Idrish [Nanoscale Science and Technology Centre and School of Biomolecular and Physical Sciences, Griffith University, Nathan, Brisbane, QLD 4111 (Australia); Department of Physics, University of Chittagong, Chittagong 4331 (Bangladesh)], E-mail: m.miah@griffith.edu.au

2008-09-21

We report an electrical method for the detection of spin current and spin relaxation in nonmagnetic semiconductors. Optically polarized spins are dragged by an electric field in GaAs. We use the anomalous Hall effect for the detection of spin current and spin relaxation. It is found that the effect depends on the electric field and doping density as well as on temperature, but not on the excitation power. A calculation for the effect is performed using the measured spin polarization by a pump-probe experiment. The results are also discussed in comparison with a quantitative evaluation of the spin lifetimes of the photogenerated electrons under drift in GaAs.

Asymmetric driven dynamics of Dzyaloshinskii domain walls in ultrathin ferromagnetic strips with perpendicular magnetic anisotropy

Energy Technology Data Exchange (ETDEWEB)

Sánchez-Tejerina, L. [Dpto. Electricidad y Electrónica, Facultad de Ciencias, Universidad de Valladolid, 47011 Valladolid (Spain); Alejos, Ó., E-mail: oscaral@ee.uva.es [Dpto. Electricidad y Electrónica, Facultad de Ciencias, Universidad de Valladolid, 47011 Valladolid (Spain); Martínez, E. [Dpto. Física Aplicada, Facultad de Ciencias, Universidad de Salamanca, 37011 Salamanca (Spain); Muñoz, J.M. [Dpto. Electricidad y Electrónica, Facultad de Ciencias, Universidad de Valladolid, 47011 Valladolid (Spain)

2016-07-01

The dynamics of domain walls in ultrathin ferromagnetic strips with perpendicular magnetic anisotropy is studied from both numerical and analytical micromagnetics. The influence of a moderate interfacial Dzyaloshinskii–Moriya interaction associated to a bi-layer strip arrangement has been considered, giving rise to the formation of Dzyaloshinskii domain walls. Such walls possess under equilibrium conditions an inner magnetization structure defined by a certain orientation angle that make them to be considered as intermediate configurations between Bloch and Néel walls. Two different dynamics are considered, a field-driven and a current-driven dynamics, in particular, the one promoted by the spin torque due to the spin-Hall effect. Results show an inherent asymmetry associated with the rotation of the domain wall magnetization orientation before reaching the stationary regime, characterized by a constant terminal speed. For a certain initial DW magnetization orientation at rest, the rotation determines whether the reorientation of the DW magnetization prior to reach stationary motion is smooth or abrupt. This asymmetry affects the DW motion, which can even reverse for a short period of time. Additionally, it is found that the terminal speed in the case of the current-driven dynamics may depend on either the initial DW magnetization orientation at rest or the sign of the longitudinally injected current. - Highlights: • The asymmetric response of domain walls in bilayer strips with PMA is studied. • Out-of-plane fields and SHE longitudinal currents are applied. • The response is associated to the rotation of the domain wall inner magnetization. • Clockwise and counter-clockwise magnetization rotations are not equivalent. • The asymmetry results in different travelled distances and/or terminal speeds.

Asymmetric driven dynamics of Dzyaloshinskii domain walls in ultrathin ferromagnetic strips with perpendicular magnetic anisotropy

International Nuclear Information System (INIS)

Sánchez-Tejerina, L.; Alejos, Ó.; Martínez, E.; Muñoz, J.M.

2016-01-01

The dynamics of domain walls in ultrathin ferromagnetic strips with perpendicular magnetic anisotropy is studied from both numerical and analytical micromagnetics. The influence of a moderate interfacial Dzyaloshinskii–Moriya interaction associated to a bi-layer strip arrangement has been considered, giving rise to the formation of Dzyaloshinskii domain walls. Such walls possess under equilibrium conditions an inner magnetization structure defined by a certain orientation angle that make them to be considered as intermediate configurations between Bloch and Néel walls. Two different dynamics are considered, a field-driven and a current-driven dynamics, in particular, the one promoted by the spin torque due to the spin-Hall effect. Results show an inherent asymmetry associated with the rotation of the domain wall magnetization orientation before reaching the stationary regime, characterized by a constant terminal speed. For a certain initial DW magnetization orientation at rest, the rotation determines whether the reorientation of the DW magnetization prior to reach stationary motion is smooth or abrupt. This asymmetry affects the DW motion, which can even reverse for a short period of time. Additionally, it is found that the terminal speed in the case of the current-driven dynamics may depend on either the initial DW magnetization orientation at rest or the sign of the longitudinally injected current. - Highlights: • The asymmetric response of domain walls in bilayer strips with PMA is studied. • Out-of-plane fields and SHE longitudinal currents are applied. • The response is associated to the rotation of the domain wall inner magnetization. • Clockwise and counter-clockwise magnetization rotations are not equivalent. • The asymmetry results in different travelled distances and/or terminal speeds.

Longitudinal Spin Excitations and Magnetic Anisotropy in Antiferromagnetically Ordered BaFe_{2}As_{2}

Directory of Open Access Journals (Sweden)

Chong Wang

2013-12-01

Full Text Available We report on a spin-polarized inelastic neutron-scattering study of spin waves in the antiferromagnetically ordered state of BaFe_{2}As_{2}. Three distinct excitation components are identified, with spins fluctuating along the c axis, perpendicular to the ordering direction in the ab plane and parallel to the ordering direction. While the first two “transverse” components can be described by a linear spin-wave theory with magnetic anisotropy and interlayer coupling, the third “longitudinal” component is generically incompatible with the local-moment picture. It points toward a contribution of itinerant electrons to the magnetism that is already in the parent compound of this family of Fe-based superconductors.

Direct Observation on Spin-Coating Process of PS- b -P2VP Thin Films

Energy Technology Data Exchange (ETDEWEB)

Ogawa, Hiroki; Takenaka, Mikihito; Miyazaki, Tsukasa; Fujiwara, Akihiko; Lee, Byeongdu; Shimokita, Keisuke; Nishibori, Eiji; Takata, Masaki

2016-05-10

We studied the structural development of symmetric poly(styrene-b-2-vinylpyridine) (PS-b-P2VP) block copolymers during spin-coating using in situ grazing incidence small angle X-ray scattering (GISAXS) measurements. During the spin-coating process, after the formation of the micelles in dilute solution, the selective solvent induced two kinds of the morphological transition. Firstly, the disordered spherical micelles were transformed into a BCC lattice of spheres of which the (110) plane was oriented perpendicularly to the substrate surface. Secondly, further evaporation induced a transition from spheres on the BCC lattice into cylindrical structures. The orientation of the cylinders perpendicular to the substrate surface was induced by solvent convection perpendicular to the substrate, which occurs during rapid solvent evaporation. After this transition, vitrification of PS and P2VP prevented any further transition from cylinders to the more thermodynamically stable lamellar structures, as are generally observed as the bulk equilibrium state.

Electrodynamics of spin currents in superconductors

International Nuclear Information System (INIS)

Hirsch, J.E.

2008-01-01

In recent work we formulated a new set of electrodynamic equations for superconductors as an alternative to the conventional London equations, compatible with the prediction of the theory of hole superconductivity that superconductors expel negative charge from the interior towards the surface. Charge expulsion results in a macroscopically inhomogeneous charge distribution and an electric field in the interior, and because of this a spin current is expected to exist. Furthermore, we have recently shown that a dynamical explanation of the Meissner effect in superconductors leads to the prediction that a spontaneous spin current exists near the surface of superconductors (spin Meissner effect). In this paper we extend the electrodynamic equations proposed earlier for the charge density and charge current to describe also the space and time dependence of the spin density and spin current. This allows us to determine the magnitude of the expelled negative charge and interior electric field as well as of the spin current in terms of other measurable properties of superconductors. We also provide a 'geometric' interpretation of the difference between type I and type II superconductors, discuss how superconductors manage to conserve angular momentum, discuss the relationship between our model and Slater's seminal work on superconductivity, and discuss the magnitude of the expected novel effects for elemental and other superconductors. (Abstract Copyright [2008], Wiley Periodicals, Inc.)

Antiresonance induced spin-polarized current generation

Science.gov (United States)

Yin, Sun; Min, Wen-Jing; Gao, Kun; Xie, Shi-Jie; Liu, De-Sheng

2011-12-01

According to the one-dimensional antiresonance effect (Wang X R, Wang Y and Sun Z Z 2003 Phys. Rev. B 65 193402), we propose a possible spin-polarized current generation device. Our proposed model consists of one chain and an impurity coupling to the chain. The energy level of the impurity can be occupied by an electron with a specific spin, and the electron with such a spin is blocked because of the antiresonance effect. Based on this phenomenon our model can generate the spin-polarized current flowing through the chain due to different polarization rates. On the other hand, the device can also be used to measure the generated spin accumulation. Our model is feasible with today's technology.

Spin-current diode with a ferromagnetic semiconductor

International Nuclear Information System (INIS)

Sun, Qing-Feng; Xie, X. C.

2015-01-01

Diode is a key device in electronics: the charge current can flow through the device under a forward bias, while almost no current flows under a reverse bias. Here, we propose a corresponding device in spintronics: the spin-current diode, in which the forward spin current is large but the reversed one is negligible. We show that the lead/ferromagnetic quantum dot/lead system and the lead/ferromagnetic semiconductor/lead junction can work as spin-current diodes. The spin-current diode, a low dissipation device, may have important applications in spintronics, as the conventional charge-current diode does in electronics

Quantifying the effects of disorder on switching of perpendicular spin ice arrays

Science.gov (United States)

Kempinger, Susan; Fraleigh, Robert; Lammert, Paul; Crespi, Vincent; Samarth, Nitin; Zhang, Sheng; Schiffer, Peter

There is much contemporary interest in probing custom designed, frustrated systems such as artificial spin ice. To that end, we study arrays of lithographically patterned, single-domain Pt/Co multilayer islands. Due to the perpendicular anisotropy of these materials, we are able to use diffraction-limited magneto-optical Kerr effect microscopy to access the magnetic state in situ with an applied field. As we tune the interaction strength by adjusting the lattice spacing, we observe the switching field distribution broadening with increasing dipolar interactions. Using a simple mathematical analysis we extract the intrinsic disorder (the disorder that would be present without interactions) from these switching field distributions. We also characterize the intrinsic disorder by systematically removing neighbor effects from the switching field distribution. Understanding this disorder contribution as well as the interaction strength allows us to more accurately characterize the moment correlation. This project was funded by the US Department of Energy, Office of Basic Energy Sciences, Materials Sciences and Engineering Division under Grant No. DE- SC0010778

Higher spin currents in the orthogonal coset theory

Energy Technology Data Exchange (ETDEWEB)

Ahn, Changhyun [Kyungpook National University, Department of Physics, Taegu (Korea, Republic of)