Impedance Matching Antenna-Integrated High-Efficiency Energy Harvesting Circuit

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Yuharu Shinki

2017-08-01

Full Text Available This paper describes the design of a high-efficiency energy harvesting circuit with an integrated antenna. The circuit is composed of series resonance and boost rectifier circuits for converting radio frequency power into boosted direct current (DC voltage. The measured output DC voltage is 5.67 V for an input of 100 mV at 900 MHz. Antenna input impedance matching is optimized for greater efficiency and miniaturization. The measured efficiency of this antenna-integrated energy harvester is 60% for −4.85 dBm input power and a load resistance equal to 20 kΩ at 905 MHz.

Impedance Matching Antenna-Integrated High-Efficiency Energy Harvesting Circuit.

Science.gov (United States)

Shinki, Yuharu; Shibata, Kyohei; Mansour, Mohamed; Kanaya, Haruichi

2017-08-01

This paper describes the design of a high-efficiency energy harvesting circuit with an integrated antenna. The circuit is composed of series resonance and boost rectifier circuits for converting radio frequency power into boosted direct current (DC) voltage. The measured output DC voltage is 5.67 V for an input of 100 mV at 900 MHz. Antenna input impedance matching is optimized for greater efficiency and miniaturization. The measured efficiency of this antenna-integrated energy harvester is 60% for -4.85 dBm input power and a load resistance equal to 20 kΩ at 905 MHz.

Performance of High-Efficiency Advanced Triple-Junction Solar Panels for the LILT Mission Dawn

Science.gov (United States)

Fatemi, Navid S.; Sharma, Surya; Buitrago, Oscar; Sharps, Paul R.; Blok, Ron; Kroon, Martin; Jalink, Cees; Harris, Robin; Stella, Paul; Distefano, Sal

2005-01-01

NASA's Discovery Mission Dawn is designed to (LILT) conditions. operate within the solar system's Asteroid belt, where the large distance from the sun creates a low-intensity, low-temperature (LILT) condition. To meet the mission power requirements under LlLT conditions, very high-efficiency multi-junction solar cells were selected to power the spacecraft to be built by Orbital Sciences Corporation (OSC) under contract with JPL. Emcore's InGaP/InGaAs/Ge advanced triple-junction (ATJ) solar cells, exhibiting an average air mass zero (AMO) efficiency of greater than 27.6% (one-sun, 28 C), were used to populate the solar panels [1]. The two solar array wings, to be built by Dutch Space, with 5 large- area panels each (total area of 36.4 sq. meters) are projected to produce between 10.3 kWe and 1.3 kWe of end-of life (EOL) power in the 1.0 to 3.0 AU range, respectively. The details of the solar panel design, testing and power analysis are presented.

Application of Nanostructured Materials and Multi-junction Structure in Polymer Solar Cells

KAUST Repository

Gao, Yangqin

2015-12-09

With power conversion efficiency surpassing the 10% milestone for commercialization, photovoltaic technology based on solution-processable polymer solar cells (PSCs) provides a promising route towards a cost-efficient strategy to address the ever-increasing worldwide energy demands. However, to make PSCs successful, challenges such as insufficient light absorption, high maintenance costs, and relatively high production costs must be addressed. As solutions to some of these problems, the unique properties of nanostructured materials and complimentary light absorption in multi-junction device structure could prove to be highly beneficial. As a starting point, integrating nanostructure-based transparent self-cleaning surfaces in PSCs was investigated first. By controlling the length of the hydrothermally grown ZnO nanorods and covering their surface with a thin layer of chemical vapor-deposited SiO2, a highly transparent and UV-resistant superhydrophobic surface was constructed. Integrating the transparent superhydrophobic surface in a PSC shows minimal impact on the figure of merit of the PSC. To address the low mechanical durability of the transparent superhydrophobic surface based on SiO2-coated ZnO nanorods, a novel method inspired by the water condensation process was developed. This method involved directly growing hollow silica half-nanospheres on the substrate through the condensation of water in the presence of a silica precursor. Benefit from the decreased back scattering efficiency and increased light transport mean free path arise from the hollow nature, a transparent superhydrophobic surface was realized using submicrometer sized silica half-nanospheres. The decent mechanical property of silica and the “direct-grown” protocol are expected to impart improved mechanical durability to the transparent superhydrophobic surface. Regarding the application of multi-junction device structure in PSCs, homo multi-junction PSCs were constructed from an identical

An optimized efficient dual junction InGaN/CIGS solar cell: A numerical simulation

Science.gov (United States)

Farhadi, Bita; Naseri, Mosayeb

2016-08-01

The photovoltaic performance of an efficient double junction InGaN/CIGS solar cell including a CdS antireflector top cover layer is studied using Silvaco ATLAS software. In this study, to gain a desired structure, the different design parameters, including the CIGS various band gaps, the doping concentration and the thickness of CdS layer are optimized. The simulation indicates that under current matching condition, an optimum efficiency of 40.42% is achieved.

Poster - Thur Eve - 57: Craniospinal irradiation with jagged-junction IMRT approach without beam edge matching for field junctions.

Science.gov (United States)

Cao, F; Ramaseshan, R; Corns, R; Harrop, S; Nuraney, N; Steiner, P; Aldridge, S; Liu, M; Carolan, H; Agranovich, A; Karva, A

2012-07-01

Craniospinal irradiation were traditionally treated the central nervous system using two or three adjacent field sets. A intensity-modulated radiotherapy (IMRT) plan (Jagged-Junction IMRT) which overcomes problems associated with field junctions and beam edge matching, improves planning and treatment setup efficiencies with homogenous target dose distribution was developed. Jagged-Junction IMRT was retrospectively planned on three patients with prescription of 36 Gy in 20 fractions and compared to conventional treatment plans. Planning target volume (PTV) included the whole brain and spinal canal to the S3 vertebral level. The plan employed three field sets, each with a unique isocentre. One field set with seven fields treated the cranium. Two field sets treated the spine, each set using three fields. Fields from adjacent sets were overlapped and the optimization process smoothly integrated the dose inside the overlapped junction. For the Jagged-Junction IMRT plans vs conventional technique, average homogeneity index equaled 0.08±0.01 vs 0.12±0.02, and conformity number equaled 0.79±0.01 vs 0.47±0.12. The 95% isodose surface covered (99.5±0.3)% of the PTV vs (98.1±2.0)%. Both Jagged-Junction IMRT plans and the conventional plans had good sparing of the organs at risk. Jagged-Junction IMRT planning provided good dose homogeneity and conformity to the target while maintaining a low dose to the organs at risk. Jagged-Junction IMRT optimization smoothly distributed dose in the junction between field sets. Since there was no beam matching, this treatment technique is less likely to produce hot or cold spots at the junction in contrast to conventional techniques. © 2012 American Association of Physicists in Medicine.

Robust and accurate multi-view reconstruction by prioritized matching

DEFF Research Database (Denmark)

Ylimaki, Markus; Kannala, Juho; Holappa, Jukka

2012-01-01

a prioritized matching method which expands the most promising seeds first. The output of the method is a three-dimensional point cloud. Unlike previous correspondence growing approaches our method allows to use the best-first matching principle in the generic multi-view stereo setting with arbitrary number...... of input images. Our experiments show that matching the most promising seeds first provides very robust point cloud reconstructions efficiently with just a single expansion step. A comparison to the current state-of-the-art shows that our method produces reconstructions of similar quality but significantly...

Technology Enabling Ultra High Concentration Multi-Junction Cells. Final report

Energy Technology Data Exchange (ETDEWEB)

Bedair, S. M.; Colter, Peter

2016-03-30

The project goal is to enable multijunction cells to operate at greater than 2000× suns intensity with efficiency above forty percent. To achieve this goal the recipients have developed a robust high-bandgap tunnel junction, reduce series resistance, and integrated a practical heat dissipation scheme.

High-efficiency thermal switch based on topological Josephson junctions

Science.gov (United States)

Sothmann, Björn; Giazotto, Francesco; Hankiewicz, Ewelina M.

2017-02-01

We propose theoretically a thermal switch operating by the magnetic-flux controlled diffraction of phase-coherent heat currents in a thermally biased Josephson junction based on a two-dimensional topological insulator. For short junctions, the system shows a sharp switching behavior while for long junctions the switching is smooth. Physically, the switching arises from the Doppler shift of the superconducting condensate due to screening currents induced by a magnetic flux. We suggest a possible experimental realization that exhibits a relative temperature change of 40% between the on and off state for realistic parameters. This is a factor of two larger than in recently realized thermal modulators based on conventional superconducting tunnel junctions.

Investigation of a novel concept for hydrogen production by PEM water electrolysis integrated with multi-junction solar cells

International Nuclear Information System (INIS)

Ferrero, Domenico; Santarelli, Massimo

2017-01-01

Highlights: • A 2D model of a PEM water electrolyzer is developed and validated. • A novel system integrating PEM and multi-junction solar cells is proposed. • The model is applied to the simulation of the novel system. • The integration of PEM and MJ cells enhances the hydrogen production efficiency. - Abstract: A 2D finite element model of a high-pressure PEM water electrolyzer is developed and validated over experimental data obtained from a demonstration prototype. The model includes the electrochemical, fluidic and thermal description of the repeating unit of a PEM electrolyzer stack. The model is applied to the simulation of a novel system composed by a high-temperature, high-pressure PEM electrochemical cell coupled with a photovoltaic multi-junction solar cell installed in a solar concentrator. The thermo-electrochemical characterization of the solar-driven PEM electrolysis system is presented and the advantages of the high-temperature operation and of the direct coupling of electrolyzer and solar cell are assessed. The results show that the integration of the multi-junction cell enhances the performance of the electrolyzer and allows to achieve higher system efficiency compared to separated photovoltaic generation and hydrogen production by electrolysis.

Dilute Nitrides For 4-And 6- Junction Space Solar Cells

Science.gov (United States)

Essig, S.; Stammler, E.; Ronsch, S.; Oliva, E.; Schachtner, M.; Siefer, G.; Bett, A. W.; Dimroth, F.

2011-10-01

According to simulations the efficiency of conventional, lattice-matched GaInP/GaInAs/Ge triple-junction space solar cells can be strongly increased by the incorporation of additional junctions. In this way the existing excess current of the Germanium bottom cell can be reduced and the voltage of the stack can be increased. In particular, the use of 1.0 eV materials like GaInNAs opens the door for solar cells with significantly improved conversion efficiency. We have investigated the material properties of GaInNAs grown by metal organic vapour phase epitaxy (MOVPE) and its impact on the quantum efficiency of solar cells. Furthermore we have developed a GaInNAs subcell with a bandgap energy of 1.0 eV and integrated it into a GaInP/GaInAs/GaInNAs/Ge 4-junction and a AlGaInP/GaInP/AlGaInAs/GaInAs/GaInNAs/Ge 6- junction space solar cell. The material quality of the dilute nitride junction limits the current density of these devices to 9.3 mA/cm2 (AM0). This is not sufficient for a 4-junction cell but may lead to current matched 6- junction devices in the future.

Quasiparticle current in superconductor-semiconductor-superconductor junctions

International Nuclear Information System (INIS)

Tartakovskij, A.V.; Fistul', M.V.

1988-01-01

It is shown that the quasiparticle current in a superconductor-semiconductor-superconductor junction may significantly increase as a result of resonant passage of the quasiparticle along particular trajectories from periodically situated localized centers. A prediction of the theory is that with increasing junction resistance there should be a change from an excessive current to a insufficient current on the current-voltage characteristics (at high voltages). The effect of transparency of the boundaries on resonance tunneling in such junctions is also investigated

Current amplifier and flux-buffer designs using an exponential flux shuttle with a Josephson junction synthetic inductor

International Nuclear Information System (INIS)

Gershenson, M.

1989-01-01

A current amplifier design based on the principle of fluxon propagation in a multi-junction Exponential Flux Shuttle has been investigated. In this design, the critical current of the junction is increased exponentially and the SQUID inductance is a JJ (Josephson Junction) equivalent inductance. Current gain can be achieved by generating fluxons at the low end and dissipating them at the high end where the load is located. Advantages over other types of linear devices are discussed. Two parallel Exponential Flux Shuttles can be used to duplicate flux from a high inductance input coil t a low inductance output. Device performance of the two circuits are evaluated by computer simulation, noise performance is discussed

Ultra-high efficiency photovoltaic cells for large scale solar power generation.

Science.gov (United States)

Nakano, Yoshiaki

2012-01-01

The primary targets of our project are to drastically improve the photovoltaic conversion efficiency and to develop new energy storage and delivery technologies. Our approach to obtain an efficiency over 40% starts from the improvement of III-V multi-junction solar cells by introducing a novel material for each cell realizing an ideal combination of bandgaps and lattice-matching. Further improvement incorporates quantum structures such as stacked quantum wells and quantum dots, which allow higher degree of freedom in the design of the bandgap and the lattice strain. Highly controlled arrangement of either quantum dots or quantum wells permits the coupling of the wavefunctions, and thus forms intermediate bands in the bandgap of a host material, which allows multiple photon absorption theoretically leading to a conversion efficiency exceeding 50%. In addition to such improvements, microfabrication technology for the integrated high-efficiency cells and the development of novel material systems that realizes high efficiency and low cost at the same time are investigated.

Current-driven thermo-magnetic switching in magnetic tunnel junctions

Science.gov (United States)

Kravets, A. F.; Polishchuk, D. M.; Pashchenko, V. A.; Tovstolytkin, A. I.; Korenivski, V.

2017-12-01

We investigate switching of magnetic tunnel junctions (MTJs) driven by the thermal effect of the transport current through the junctions. The switching occurs in a specially designed composite free layer, which acts as one of the MTJ electrodes, and is due to a current-driven ferro-to-paramagnetic Curie transition with the associated exchange decoupling within the free layer leading to magnetic reversal. We simulate the current and heat propagation through the device and show how heat focusing can be used to improve the power efficiency. The Curie-switch MTJ demonstrated in this work has the advantage of being highly tunable in terms of its operating temperature range, conveniently to or just above room temperature, which can be of technological significance and competitive with the known switching methods using spin-transfer torques.

High Efficiency Multijunction Solar Cells with Finely-Tuned Quantum Wells

Science.gov (United States)

Varonides, Argyrios C.

The field of high efficiency (inorganic) photovoltaics (PV) is rapidly maturing in both efficiency goals and cover all cost reduction of fabrication. On one hand, know-how from space industry in new solar cell design configurations and on the other, fabrication cost reduction challenges for terrestrial uses of solar energy, have paved the way to a new generation of PV devices, capable of capturing most of the solar spectrum. For quite a while now, the goal of inorganic solar cell design has been the total (if possible) capture-absorption of the solar spectrum from a single solar cell, designed in such a way that a multiple of incident wavelengths could be simultaneously absorbed. Multi-absorption in device physics indicates parallel existence of different materials that absorb solar photons of different energies. Bulk solid state devices absorb at specific energy thresholds, depending on their respective energy gap (EG). More than one energy gaps would on principle offer new ways of photon absorption: if such a structure could be fabricated, two or more groups of photons could be absorbed simultaneously. The point became then what lattice-matched semiconductor materials could offer such multiple levels of absorption without much recombination losses. It was soon realized that such layer multiplicity combined with quantum size effects could lead to higher efficiency collection of photo-excited carriers. At the moment, the main reason that slows down quantum effect solar cell production is high fabrication cost, since it involves primarily expensive methods of multilayer growth. Existing multi-layer cells are fabricated in the bulk, with three (mostly) layers of lattice-matched and non-lattice-matched (pseudo-morphic) semiconductor materials (GaInP/InGaN etc), where photo-carrier collection occurs in the bulk of the base (coming from the emitter which lies right under the window layer). These carriers are given excess to conduction via tunnel junction (grown between

Numerical investigation of a double-junction a:SiGe thin-film solar cell including the multi-trench region

International Nuclear Information System (INIS)

Kacha, K.; Djeffal, F.; Ferhati, H.; Arar, D.; Meguellati, M.

2015-01-01

We present a new approach based on the multi-trench technique to improve the electrical performances, which are the fill factor and the electrical efficiency. The key idea behind this approach is to introduce a new multi-trench region in the intrinsic layer, in order to modulate the total resistance of the solar cell. Based on 2-D numerical investigation and optimization of amorphous SiGe double-junction (a-Si:H/a-SiGe:H) thin film solar cells, in the present paper numerical models of electrical and optical parameters are developed to explain the impact of the multi-trench technique on the improvement of the double-junction solar cell electrical behavior for high performance photovoltaic applications. In this context, electrical characteristics of the proposed design are analyzed and compared with conventional amorphous silicon double-junction thin-film solar cells. (paper)

The critical current density of an SNS Josephson-junction in high magnetic fields

International Nuclear Information System (INIS)

Carty, George J; Hampshire, Damian P

2013-01-01

Although the functional form of the critical current density (J c ) of superconducting–normal–superconducting (SNS) Josephson-junctions (J-Js) has long been known in the very low field limit (e.g. the sinc function), includes the local properties of the junction and has been confirmed experimentally in many systems, there have been no such general solutions available for high fields. Here, we derive general analytic equations for J c in zero field and in high fields across SNS J-Js for arbitrary resistivity of the superconductor and the normal layer which are consistent with the literature results available in limiting cases. We confirm the validity of the approach using both computational solutions to time-dependent Ginzburg–Landau (TDGL) theory applied to SNS junctions and experimental J c data for an SNS PbBi–Cd–PbBi junction. We suggest that since SNS junctions can be considered the basic building blocks for the description of the grain boundaries of polycrystalline materials because they both provide flux-flow channels, this work may provide a mathematical framework for high J c technological polycrystalline superconductors in high magnetic fields. (paper)

Aberration-corrected transmission electron microscopy analyses of GaAs/Si interfaces in wafer-bonded multi-junction solar cells

Energy Technology Data Exchange (ETDEWEB)

Häussler, Dietrich [Institute for Materials Science, Christian-Albrechts-University Kiel, Kaiserstraße 2, 24143 Kiel (Germany); Houben, Lothar [Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons, Research Centre Juelich GmbH, 52425 Juelich (Germany); Essig, Stephanie [Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstraße 2, 79110 Freiburg (Germany); Kurttepeli, Mert [Institute for Materials Science, Christian-Albrechts-University Kiel, Kaiserstraße 2, 24143 Kiel (Germany); Dimroth, Frank [Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstraße 2, 79110 Freiburg (Germany); Dunin-Borkowski, Rafal E. [Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons, Research Centre Juelich GmbH, 52425 Juelich (Germany); Jäger, Wolfgang, E-mail: wolfgang.jaeger@tf.uni-kiel.de [Institute for Materials Science, Christian-Albrechts-University Kiel, Kaiserstraße 2, 24143 Kiel (Germany)

2013-11-15

Aberration-corrected scanning transmission electron microscopy (STEM) and electron energy loss spectroscopy (EELS) investigations have been applied to investigate the structure and composition fluctuations near interfaces in wafer-bonded multi-junction solar cells. Multi-junction solar cells are of particular interest since efficiencies well above 40% have been obtained for concentrator solar cells which are based on III-V compound semiconductors. In this methodologically oriented investigation, we explore the potential of combining aberration-corrected high-angle annular dark-field STEM imaging (HAADF-STEM) with spectroscopic techniques, such as EELS and energy-dispersive X-ray spectroscopy (EDXS), and with high-resolution transmission electron microscopy (HR-TEM), in order to analyze the effects of fast atom beam (FAB) and ion beam bombardment (IB) activation treatments on the structure and composition of bonding interfaces of wafer-bonded solar cells on Si substrates. Investigations using STEM/EELS are able to measure quantitatively and with high precision the widths and the fluctuations in element distributions within amorphous interface layers of nanometer extensions, including those of light elements. Such measurements allow the control of the activation treatments and thus support assessing electrical conductivity phenomena connected with impurity and dopant distributions near interfaces for optimized performance of the solar cells. - Highlights: • Aberration-corrected TEM and EELS reveal structural and elemental profiles across GaAs/Si bond interfaces in wafer-bonded GaInP/GaAs/Si - multi-junction solar cells. • Fluctuations in elemental concentration in nanometer-thick amorphous interface layers, including the disrubutions of light elements, are measured using EELS. • The projected widths of the interface layers are determined on the atomic scale from STEM-HAADF measurements. • The effects of atom and ion beam activation treatment on the bonding

NbN/AlN/NbN tunnel junctions with high current density up to 54 kA/cm2

International Nuclear Information System (INIS)

Wang, Z.; Kawakami, A.; Uzawa, Y.

1997-01-01

We report on progress in the development of high current density NbN/AlN/NbN tunnel junctions for applications as submillimeter wave superconductor-insulator-superconductor mixers. A very high current density up to 54 kA/cm 2 , roughly an order of magnitude larger than any reported results for all-NbN tunnel junctions, was achieved in the junctions with about 1 nm thick AlN barriers. The magnetic field and temperature dependence of critical supercurrents were measured to investigate the Josephson tunneling behavior of critical supercurrents in the high-J c junctions. The junctions showed high-quality junction characteristics with a large gap voltage of 5 mV and sharp quasiparticle current rise (ΔV g =0.1 mV). The R sg /R N ratio was about 5 with a V m value of 14 mV measured at 4.2 K. copyright 1997 American Institute of Physics

Influence of coupling parameter on current-voltage characteristics of intrinsic Josephson junctions in high-T c superconductors

International Nuclear Information System (INIS)

Shukrinov, Yu.M.; Mahfouzi, F.

2006-01-01

We study the current-voltage characteristics of intrinsic Josephson junctions in high-T c superconductors by numerical calculations and in framework of capacitively coupled Josephson junctions model we obtain the total number of branches. The influence of the coupling parameter α on the current-voltage characteristics at fixed parameter β (β 2 1/β c , where β c is McCumber parameter) and the influence of α on β-dependence of the current-voltage characteristics are investigated. We obtain the α-dependence of the branch's slopes and branch's endpoints. The presented results show new features of the coupling effect on the scheme of hysteresis jumps in current-voltage characteristics of intrinsic Josephson junctions in high-T c superconductors

Triple-junction thin-film silicon solar cell fabricated on periodically textured substrate with a stabilized efficiency of 13.6%

Science.gov (United States)

Sai, Hitoshi; Matsui, Takuya; Koida, Takashi; Matsubara, Koji; Kondo, Michio; Sugiyama, Shuichiro; Katayama, Hirotaka; Takeuchi, Yoshiaki; Yoshida, Isao

2015-05-01

We report a high-efficiency triple-junction thin-film silicon solar cell fabricated with the so-called substrate configuration. It was verified whether the design criteria for developing single-junction microcrystalline silicon (μc-Si:H) solar cells are applicable to multijunction solar cells. Furthermore, a notably high short-circuit current density of 32.9 mA/cm2 was achieved in a single-junction μc-Si:H cell fabricated on a periodically textured substrate with a high-mobility front transparent contacting layer. These technologies were also combined into a-Si:H/μc-Si:H/μc-Si:H triple-junction cells, and a world record stabilized efficiency of 13.6% was achieved.

Performance of ultra high efficiency thin germanium p-n junction solar cells intended for solar thermophotovoltaic application

Energy Technology Data Exchange (ETDEWEB)

Vera, E S; Loferski, J J; Spitzer, M; Schewchun, J

1981-01-01

The theoretical upper limit conversion efficiency as a function of cell thickness and junction position is calculated for a germanium p-n junction solar cell intended for solar thermophotovoltaic energy conversion which incorporates minority carrier mirrors and optical mirrors on both the front and back boundaries of the active part of the device. The optical mirrors provide light confinement reducing the thickness required for optimum performance while minority carrier mirrors diminish surface recombination of carriers which seriously reduce short circuit current and limit open circuit voltage. The role of non-ideal optical and minority carrier mirrors and the effect of resistivity variations are studied. The calculations are conducted under conditions of high incident power (2-25 W/cm/sup 2/) which are encountered in solar thermophotovoltaic energy conversion systems. 14 refs.

Current noise in tunnel junctions

Energy Technology Data Exchange (ETDEWEB)

Frey, Moritz; Grabert, Hermann [Physikalisches Institut, Universitaet Freiburg, Hermann-Herder-Strasse 3, 79104, Freiburg (Germany)

2017-06-15

We study current fluctuations in tunnel junctions driven by a voltage source. The voltage is applied to the tunneling element via an impedance providing an electromagnetic environment of the junction. We use circuit theory to relate the fluctuations of the current flowing in the leads of the junction with the voltage fluctuations generated by the environmental impedance and the fluctuations of the tunneling current. The spectrum of current fluctuations is found to consist of three parts: a term arising from the environmental Johnson-Nyquist noise, a term due to the shot noise of the tunneling current and a third term describing the cross-correlation between these two noise sources. Our phenomenological theory reproduces previous results based on the Hamiltonian model for the dynamical Coulomb blockade and provides a simple understanding of the current fluctuation spectrum in terms of circuit theory and properties of the average current. Specific results are given for a tunnel junction driven through a resonator. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Robust, Efficient Depth Reconstruction With Hierarchical Confidence-Based Matching.

Science.gov (United States)

Sun, Li; Chen, Ke; Song, Mingli; Tao, Dacheng; Chen, Gang; Chen, Chun

2017-07-01

In recent years, taking photos and capturing videos with mobile devices have become increasingly popular. Emerging applications based on the depth reconstruction technique have been developed, such as Google lens blur. However, depth reconstruction is difficult due to occlusions, non-diffuse surfaces, repetitive patterns, and textureless surfaces, and it has become more difficult due to the unstable image quality and uncontrolled scene condition in the mobile setting. In this paper, we present a novel hierarchical framework with multi-view confidence-based matching for robust, efficient depth reconstruction in uncontrolled scenes. Particularly, the proposed framework combines local cost aggregation with global cost optimization in a complementary manner that increases efficiency and accuracy. A depth map is efficiently obtained in a coarse-to-fine manner by using an image pyramid. Moreover, confidence maps are computed to robustly fuse multi-view matching cues, and to constrain the stereo matching on a finer scale. The proposed framework has been evaluated with challenging indoor and outdoor scenes, and has achieved robust and efficient depth reconstruction.

High-Efficiency Silicon/Organic Heterojunction Solar Cells with Improved Junction Quality and Interface Passivation.

Science.gov (United States)

He, Jian; Gao, Pingqi; Ling, Zhaoheng; Ding, Li; Yang, Zhenhai; Ye, Jichun; Cui, Yi

2016-12-27

Silicon/organic heterojunction solar cells (HSCs) based on conjugated polymers, poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS), and n-type silicon (n-Si) have attracted wide attention due to their potential advantages of high efficiency and low cost. However, the state-of-the-art efficiencies are still far from satisfactory due to the inferior junction quality. Here, facile treatments were applied by pretreating the n-Si wafer in tetramethylammonium hydroxide (TMAH) solution and using a capping copper iodide (CuI) layer on the PEDOT:PSS layer to achieve a high-quality Schottky junction. Detailed photoelectric characteristics indicated that the surface recombination was greatly suppressed after TMAH pretreatment, which increased the thickness of the interfacial oxide layer. Furthermore, the CuI capping layer induced a strong inversion layer near the n-Si surface, resulting in an excellent field effect passivation. With the collaborative improvements in the interface chemical and electrical passivation, a competitive open-circuit voltage of 0.656 V and a high fill factor of 78.1% were achieved, leading to a stable efficiency of over 14.3% for the planar n-Si/PEDOT:PSS HSCs. Our findings suggest promising strategies to further exploit the full voltage as well as efficiency potentials for Si/organic solar cells.

OBJECT-SPACE MULTI-IMAGE MATCHING OF MOBILE-MAPPING-SYSTEM IMAGE SEQUENCES

Directory of Open Access Journals (Sweden)

Y. C. Chen

2012-07-01

Full Text Available This paper proposes an object-space multi-image matching procedure of terrestrial MMS (Mobile Mapping System image sequences to determine the coordinates of an object point automatically and reliably. This image matching procedure can be applied to find conjugate points of MMS image sequences efficiently. Conventional area-based image matching methods are not reliable to deliver accurate matching results for this application due to image scale variations, viewing angle variations, and object occlusions. In order to deal with these three matching problems, an object space multi-image matching is proposed. A modified NCC (Normalized Cross Correlation coefficient is proposed to measure the similarity of image patches. A modified multi-window matching procedure will also be introduced to solve the problem of object occlusion. A coarse-to-fine procedure with a combination of object-space multi-image matching and multi-window matching is adopted. The proposed procedure has been implemented for the purpose of matching terrestrial MMS image sequences. The ratio of correct matches of this experiment was about 80 %. By providing an approximate conjugate point in an overlapping image manually, most of the incorrect matches could be fixed properly and the ratio of correct matches was improved up to 98 %.

Fabrication of double- and triple-junction solar cells with hydrogenated amorphous silicon oxide (a-SiOx:H) top cell

Czech Academy of Sciences Publication Activity Database

Kim, D.Y.; Guijt, E.; Si, F.T.; Santbergen, R.; Holovský, Jakub; Isabella, O.; van Swaaij, R.A.C.M.M.; Zeman, M.

2015-01-01

Roč. 141, Oct (2015), s. 148-153 ISSN 0927-0248 R&D Projects: GA MŠk 7E12029 EU Projects: European Commission(XE) 283501 - Fast Track Institutional support: RVO:68378271 Keywords : multi-junction solar cel * a-SiOx:H * high voc * current matching Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 4.732, year: 2015

Three-terminal heterojunction bipolar transistor solar cell for high-efficiency photovoltaic conversion.

Science.gov (United States)

Martí, A; Luque, A

2015-04-22

Here we propose, for the first time, a solar cell characterized by a semiconductor transistor structure (n/p/n or p/n/p) where the base-emitter junction is made of a high-bandgap semiconductor and the collector is made of a low-bandgap semiconductor. We calculate its detailed-balance efficiency limit and prove that it is the same one than that of a double-junction solar cell. The practical importance of this result relies on the simplicity of the structure that reduces the number of layers that are required to match the limiting efficiency of dual-junction solar cells without using tunnel junctions. The device naturally emerges as a three-terminal solar cell and can also be used as building block of multijunction solar cells with an increased number of junctions.

Efficient Aho-Corasick String Matching on Emerging Multicore Architectures

Energy Technology Data Exchange (ETDEWEB)

Tumeo, Antonino; Villa, Oreste; Secchi, Simone; Chavarría-Miranda, Daniel

2013-12-12

String matching algorithms are critical to several scientific fields. Beside text processing and databases, emerging applications such as DNA protein sequence analysis, data mining, information security software, antivirus, ma- chine learning, all exploit string matching algorithms [3]. All these applica- tions usually process large quantity of textual data, require high performance and/or predictable execution times. Among all the string matching algorithms, one of the most studied, especially for text processing and security applica- tions, is the Aho-Corasick algorithm. 1 2 Book title goes here Aho-Corasick is an exact, multi-pattern string matching algorithm which performs the search in a time linearly proportional to the length of the input text independently from pattern set size. However, depending on the imple- mentation, when the number of patterns increase, the memory occupation may raise drastically. In turn, this can lead to significant variability in the performance, due to the memory access times and the caching effects. This is a significant concern for many mission critical applications and modern high performance architectures. For example, security applications such as Network Intrusion Detection Systems (NIDS), must be able to scan network traffic against very large dictionaries in real time. Modern Ethernet links reach up to 10 Gbps, and malicious threats are already well over 1 million, and expo- nentially growing [28]. When performing the search, a NIDS should not slow down the network, or let network packets pass unchecked. Nevertheless, on the current state-of-the-art cache based processors, there may be a large per- formance variability when dealing with big dictionaries and inputs that have different frequencies of matching patterns. In particular, when few patterns are matched and they are all in the cache, the procedure is fast. Instead, when they are not in the cache, often because many patterns are matched and the caches are

Lower hybrid wave coupling in Tore Supra through multi junction launchers

International Nuclear Information System (INIS)

Litaudon, X.; Berger By, G.; Bibet, P.; Bizarro, J.P.; Capitain, J.J.; Carrasco, J.; Goniche, M.; Hoang, G.T.; Kupfer, K.; Magne, R.; Moreau, D.; Peysson, Y.; Rax, J.M.; Rey, G.; Rigaud, D.; Tonon, G.

1992-01-01

The TORE SUPRA Lower Hybrid Current Drive experiments (8 MW/3.7GHz) use large phased waveguide arrays, to couple the waves to the plasma. These launchers are based on the multi junction principle. Extensive coupling measurements have been performed in order to study the Radio-Frequency (RF) characteristics of the plasma loaded antennae and are reported. Measurements of the plasma scattering coefficients of the antennae show good agreement with those obtained from the linear coupling theory (SWAN code). Global reflection coefficients of a few percents have been measured in a large range of edge plasma densities or antenna positions, and up to a maximum injected RF power density of 45MW/m 2 . When the plasma is pushed against the inner wall of the chamber, the reflection coefficient was found to remain low up to distances of the order of 10 cm. The coupling measurements allow us to deduce the experimental power spectra radiated by the antennae when all their modules are fed simultaneously with variable phases. An assessment of the multi junction launcher as a viable antenna for high power transmission with good coupling characteristics and spectrum control is thus made

Single-graded CIGS with narrow bandgap for tandem solar cells.

Science.gov (United States)

Feurer, Thomas; Bissig, Benjamin; Weiss, Thomas P; Carron, Romain; Avancini, Enrico; Löckinger, Johannes; Buecheler, Stephan; Tiwari, Ayodhya N

2018-01-01

Multi-junction solar cells show the highest photovoltaic energy conversion efficiencies, but the current technologies based on wafers and epitaxial growth of multiple layers are very costly. Therefore, there is a high interest in realizing multi-junction tandem devices based on cost-effective thin film technologies. While the efficiency of such devices has been limited so far because of the rather low efficiency of semitransparent wide bandgap top cells, the recent rise of wide bandgap perovskite solar cells has inspired the development of new thin film tandem solar devices. In order to realize monolithic, and therefore current-matched thin film tandem solar cells, a bottom cell with narrow bandgap (~1 eV) and high efficiency is necessary. In this work, we present Cu(In,Ga)Se 2 with a bandgap of 1.00 eV and a maximum power conversion efficiency of 16.1%. This is achieved by implementing a gallium grading towards the back contact into a CuInSe 2 base material. We show that this modification significantly improves the open circuit voltage but does not reduce the spectral response range of these devices. Therefore, efficient cells with narrow bandgap absorbers are obtained, yielding the high current density necessary for thin film multi-junction solar cells.

Performance analysis of AlGaAs/GaAs tunnel junctions for ultra-high concentration photovoltaics

International Nuclear Information System (INIS)

García, I; Rey-Stolle, I; Algora, C

2012-01-01

An n ++ -GaAs/p ++ -AlGaAs tunnel junction with a peak current density of 10 100 A cm -2 is developed. This device is a tunnel junction for multijunction solar cells, grown lattice-matched on standard GaAs or Ge substrates, with the highest peak current density ever reported. The voltage drop for a current density equivalent to the operation of the multijunction solar cell up to 10 000 suns is below 5 mV. Trap-assisted tunnelling is proposed to be behind this performance, which cannot be justified by simple band-to-band tunnelling. The metal-organic vapour-phase epitaxy growth conditions, which are in the limits of the transport-limited regime, and the heavy tellurium doping levels are the proposed origins of the defects enabling trap-assisted tunnelling. The hypothesis of trap-assisted tunnelling is supported by the observed annealing behaviour of the tunnel junctions, which cannot be explained in terms of dopant diffusion or passivation. For the integration of these tunnel junctions into a triple-junction solar cell, AlGaAs barrier layers are introduced to suppress the formation of parasitic junctions, but this is found to significantly degrade the performance of the tunnel junctions. However, the annealed tunnel junctions with barrier layers still exhibit a peak current density higher than 2500 A cm -2 and a voltage drop at 10 000 suns of around 20 mV, which are excellent properties for tunnel junctions and mean they can serve as low-loss interconnections in multijunction solar cells working at ultra-high concentrations. (paper)

A new approach to spherically symmetric junction surfaces and the matching of FLRW regions

International Nuclear Information System (INIS)

Kirchner, U

2004-01-01

We investigate timelike junctions (with surface layer) between spherically symmetric solutions of the Einstein-field equation. In contrast to previous investigations, this is done in a coordinate system in which the junction surface motion is absorbed in the metric, while all coordinates are continuous at the junction surface. The evolution equations for all relevant quantities are derived. We discuss the no-surface layer case (boundary surface) and study the behaviour for small surface energies. It is shown that one should expect cases in which the speed of light is reached within a finite proper time. We carefully discuss necessary and sufficient conditions for a possible matching of spherically symmetric sections. For timelike junctions between spherically symmetric spacetime sections we show explicitly that the time component of the Lanczos equation always reduces to an identity (independent of the surface equation of state). The results are applied to the matching of Friedmann-LemaItre-Robertson-Walker (FLRW) models. We discuss 'vacuum bubbles' and closed-open junctions in detail. As illustrations several numerical integration results are presented, some of them indicate that (observers comoving with) the junction surface can reach the speed of light within a finite time

Efficient spin-current injection in single-molecule magnet junctions

Directory of Open Access Journals (Sweden)

Haiqing Xie

2018-01-01

Full Text Available We study theoretically spin transport through a single-molecule magnet (SMM in the sequential and cotunneling regimes, where the SMM is weakly coupled to one ferromagnetic and one normal-metallic leads. By a master-equation approach, it is found that the spin polarization injected from the ferromagnetic lead is amplified and highly polarized spin-current can be generated, due to the exchange coupling between the transport electron and the anisotropic spin of the SMM. Moreover, the spin-current polarization can be tuned by the gate or bias voltage, and thus an efficient spin injection device based on the SMM is proposed in molecular spintronics.

Efficient spin-current injection in single-molecule magnet junctions

Science.gov (United States)

Xie, Haiqing; Xu, Fuming; Jiao, Hujun; Wang, Qiang; Liang, J.-Q.

2018-01-01

We study theoretically spin transport through a single-molecule magnet (SMM) in the sequential and cotunneling regimes, where the SMM is weakly coupled to one ferromagnetic and one normal-metallic leads. By a master-equation approach, it is found that the spin polarization injected from the ferromagnetic lead is amplified and highly polarized spin-current can be generated, due to the exchange coupling between the transport electron and the anisotropic spin of the SMM. Moreover, the spin-current polarization can be tuned by the gate or bias voltage, and thus an efficient spin injection device based on the SMM is proposed in molecular spintronics.

Magnetic field oscillations of the critical current in long ballistic graphene Josephson junctions

Science.gov (United States)

Rakyta, Péter; Kormányos, Andor; Cserti, József

2016-06-01

We study the Josephson current in long ballistic superconductor-monolayer graphene-superconductor junctions. As a first step, we have developed an efficient computational approach to calculate the Josephson current in tight-binding systems. This approach can be particularly useful in the long-junction limit, which has hitherto attracted less theoretical interest but has recently become experimentally relevant. We use this computational approach to study the dependence of the critical current on the junction geometry, doping level, and an applied perpendicular magnetic field B . In zero magnetic field we find a good qualitative agreement with the recent experiment of M. Ben Shalom et al. [Nat. Phys. 12, 318 (2016), 10.1038/nphys3592] for the length dependence of the critical current. For highly doped samples our numerical calculations show a broad agreement with the results of the quasiclassical formalism. In this case the critical current exhibits Fraunhofer-like oscillations as a function of B . However, for lower doping levels, where the cyclotron orbit becomes comparable to the characteristic geometrical length scales of the system, deviations from the results of the quasiclassical formalism appear. We argue that due to the exceptional tunability and long mean free path of graphene systems a new regime can be explored where geometrical and dynamical effects are equally important to understand the magnetic field dependence of the critical current.

MULTI-TEMPORAL AND MULTI-SENSOR IMAGE MATCHING BASED ON LOCAL FREQUENCY INFORMATION

Directory of Open Access Journals (Sweden)

X. Liu

2012-08-01

Full Text Available Image Matching is often one of the first tasks in many Photogrammetry and Remote Sensing applications. This paper presents an efficient approach to automated multi-temporal and multi-sensor image matching based on local frequency information. Two new independent image representations, Local Average Phase (LAP and Local Weighted Amplitude (LWA, are presented to emphasize the common scene information, while suppressing the non-common illumination and sensor-dependent information. In order to get the two representations, local frequency information is firstly obtained from Log-Gabor wavelet transformation, which is similar to that of the human visual system; then the outputs of odd and even symmetric filters are used to construct the LAP and LWA. The LAP and LWA emphasize on the phase and amplitude information respectively. As these two representations are both derivative-free and threshold-free, they are robust to noise and can keep as much of the image details as possible. A new Compositional Similarity Measure (CSM is also presented to combine the LAP and LWA with the same weight for measuring the similarity of multi-temporal and multi-sensor images. The CSM can make the LAP and LWA compensate for each other and can make full use of the amplitude and phase of local frequency information. In many image matching applications, the template is usually selected without consideration of its matching robustness and accuracy. In order to overcome this problem, a local best matching point detection is presented to detect the best matching template. In the detection method, we employ self-similarity analysis to identify the template with the highest matching robustness and accuracy. Experimental results using some real images and simulation images demonstrate that the presented approach is effective for matching image pairs with significant scene and illumination changes and that it has advantages over other state-of-the-art approaches, which include: the

High Density Aerial Image Matching: State-Of and Future Prospects

Science.gov (United States)

Haala, N.; Cavegn, S.

2016-06-01

Ongoing innovations in matching algorithms are continuously improving the quality of geometric surface representations generated automatically from aerial images. This development motivated the launch of the joint ISPRS/EuroSDR project "Benchmark on High Density Aerial Image Matching", which aims on the evaluation of photogrammetric 3D data capture in view of the current developments in dense multi-view stereo-image matching. Originally, the test aimed on image based DSM computation from conventional aerial image flights for different landuse and image block configurations. The second phase then put an additional focus on high quality, high resolution 3D geometric data capture in complex urban areas. This includes both the extension of the test scenario to oblique aerial image flights as well as the generation of filtered point clouds as additional output of the respective multi-view reconstruction. The paper uses the preliminary outcomes of the benchmark to demonstrate the state-of-the-art in airborne image matching with a special focus of high quality geometric data capture in urban scenarios.

Development of performance model and optimization strategy for standalone operation of CPV-hydrogen system utilizing multi-junction solar cell

KAUST Repository

Burhan, Muhammad; Shahzad, Muhammad Wakil; Ng, Kim Choon

2017-01-01

Despite highest energy potential, solar energy is only available during diurnal period with varying intensity. Therefore, owing to solar intermittency, solar energy systems need to operate in standalone configuration for steady power supply which requires reliable and sustainable energy storage. Hydrogen production has proved to be the most reliable and sustainable energy storage option for medium and long term operation. However, at the first priority, solar energy must be captured with high efficiency, in order to reduce the overall size of the system and energy storage. Multi-junction solar cells (MJCs) provide highest energy efficiency among all of the photovoltaic technologies and the concentrated photovoltaic (CPV) system concept makes their use cost effective. However, literature is lacking the performance model and optimization strategy for standalone operation of the CPV-hydrogen system. In addition, there is no commercial tool available that can analyze CPV performance, utilizing multi-junction solar cell. This paper proposes the performance model for the CPV-hydrogen systems and the multi-objective optimization strategy for its standalone operation and techno-economic analysis, using micro genetic algorithm (micro-GA). The electrolytic hydrogen production with compression storage and fuel cell, is used as energy storage system. The CPV model is verified for the experimental data of InGaP/InGaAs/Ge triple junction solar cell. An optimal CPV system design is provided for uninterrupted power supply, even under seasonal weather variations. Such approach can be easily integrated with commercial tools and the presented performance data can be used for the design of individual components of the system.

Development of performance model and optimization strategy for standalone operation of CPV-hydrogen system utilizing multi-junction solar cell

KAUST Repository

Burhan, Muhammad

2017-09-16

Despite highest energy potential, solar energy is only available during diurnal period with varying intensity. Therefore, owing to solar intermittency, solar energy systems need to operate in standalone configuration for steady power supply which requires reliable and sustainable energy storage. Hydrogen production has proved to be the most reliable and sustainable energy storage option for medium and long term operation. However, at the first priority, solar energy must be captured with high efficiency, in order to reduce the overall size of the system and energy storage. Multi-junction solar cells (MJCs) provide highest energy efficiency among all of the photovoltaic technologies and the concentrated photovoltaic (CPV) system concept makes their use cost effective. However, literature is lacking the performance model and optimization strategy for standalone operation of the CPV-hydrogen system. In addition, there is no commercial tool available that can analyze CPV performance, utilizing multi-junction solar cell. This paper proposes the performance model for the CPV-hydrogen systems and the multi-objective optimization strategy for its standalone operation and techno-economic analysis, using micro genetic algorithm (micro-GA). The electrolytic hydrogen production with compression storage and fuel cell, is used as energy storage system. The CPV model is verified for the experimental data of InGaP/InGaAs/Ge triple junction solar cell. An optimal CPV system design is provided for uninterrupted power supply, even under seasonal weather variations. Such approach can be easily integrated with commercial tools and the presented performance data can be used for the design of individual components of the system.

BInGaN alloys nearly lattice-matched to GaN for high-power high-efficiency visible LEDs

Science.gov (United States)

Williams, Logan; Kioupakis, Emmanouil

2017-11-01

InGaN-based visible light-emitting diodes (LEDs) find commercial applications for solid-state lighting and displays, but lattice mismatch limits the thickness of InGaN quantum wells that can be grown on GaN with high crystalline quality. Since narrower wells operate at a higher carrier density for a given current density, they increase the fraction of carriers lost to Auger recombination and lower the efficiency. The incorporation of boron, a smaller group-III element, into InGaN alloys is a promising method to eliminate the lattice mismatch and realize high-power, high-efficiency visible LEDs with thick active regions. In this work, we apply predictive calculations based on hybrid density functional theory to investigate the thermodynamic, structural, and electronic properties of BInGaN alloys. Our results show that BInGaN alloys with a B:In ratio of 2:3 are better lattice matched to GaN compared to InGaN and, for indium fractions less than 0.2, nearly lattice matched. Deviations from Vegard's law appear as bowing of the in-plane lattice constant with respect to composition. Our thermodynamics calculations demonstrate that the solubility of boron is higher in InGaN than in pure GaN. Varying the Ga mole fraction while keeping the B:In ratio constant enables the adjustment of the (direct) gap in the 1.75-3.39 eV range, which covers the entire visible spectrum. Holes are strongly localized in non-bonded N 2p states caused by local bond planarization near boron atoms. Our results indicate that BInGaN alloys are promising for fabricating nitride heterostructures with thick active regions for high-power, high-efficiency LEDs.

Tunable Narrow Band Gap Absorbers For Ultra High Efficiency Solar Cells

Energy Technology Data Exchange (ETDEWEB)

Bedair, Salah M. [North Carolina State Univ., Raleigh, NC (United States); Hauser, John R. [North Carolina State Univ., Raleigh, NC (United States); Elmasry, Nadia [North Carolina State Univ., Raleigh, NC (United States); Colter, Peter C. [North Carolina State Univ., Raleigh, NC (United States); Bradshaw, G. [North Carolina State Univ., Raleigh, NC (United States); Carlin, C. Z. [North Carolina State Univ., Raleigh, NC (United States); Samberg, J. [North Carolina State Univ., Raleigh, NC (United States); Edmonson, Kenneth [Spectrolab, Inc., Sylmar, CA (United States)

2012-07-31

We report on a joint research program between NCSU and Spectrolab to develop an upright multijunction solar cell structure with a potential efficiency exceeding the current record of 41.6% reported by Spectrolab. The record efficiency Ge/GaAs/InGaP triple junction cell structure is handicapped by the fact that the current generated by the Ge cell is much higher than that of both the middle and top cells. We carried out a modification of the record cell structure that will keep the lattice matched condition and allow better matching of the current generated by each cell. We used the concept of strain balanced strained layer superlattices (SLS), inserted in the i-layer, to reduce the bandgap of the middle cell without violating the desirable lattice matched condition. For the middle GaAs cell, we have demonstrated an n-GaAs/i-(InGaAs/GaAsP)/p-GaAs structure, where the In_xGa_1-xAs/GaAs_1-yP_y SLS is grown lattice matched to GaAs and with reduced bandgap from 1.43 eV to 1.2 eV, depending upon the values of x and y.

Critical current anomaly at the topological quantum phase transition in a Majorana Josephson junction

Energy Technology Data Exchange (ETDEWEB)

Huang, Hong [School of Physics, Sun Yat-sen University, Guangzhou 510275 (China); Liang, Qi-Feng [Department of Physics, Shaoxing University, Shaoxing 312000 (China); Yao, Dao-Xin, E-mail: yaodaox@mail.sysu.edu.cn [School of Physics, Sun Yat-sen University, Guangzhou 510275 (China); Wang, Zhi, E-mail: physicswangzhi@gmail.com [School of Physics, Sun Yat-sen University, Guangzhou 510275 (China)

2017-06-28

Majorana bound states in topological Josephson junctions induce a 4π period current-phase relation. Direct detection of the 4π periodicity is complicated by the quasiparticle poisoning. We reveal that Majorana bound states are also signaled by the anomalous enhancement on the critical current of the junction. We show the landscape of the critical current for a nanowire Josephson junction under a varying Zeeman field, and reveal a sharp step feature at the topological quantum phase transition point, which comes from the anomalous enhancement of the critical current at the topological regime. In multi-band wires, the anomalous enhancement disappears for an even number of bands, where the Majorana bound states fuse into Andreev bound states. This anomalous critical current enhancement directly signals the existence of the Majorana bound states, and also provides a valid signature for the topological quantum phase transition. - Highlights: • We introduce the critical current step as a signal for the topological quantum phase transition. • We study the quantum phase transition in the topological nanowire under a rotating Zeeman field. • We show that the critical current anomaly gradually disappears for systems with more sub-bands.

Valley dependent transport in graphene L junction

Science.gov (United States)

Chan, K. S.

2018-05-01

We studied the valley dependent transport in graphene L junctions connecting an armchair lead and a zigzag lead. The junction can be used in valleytronic devices and circuits. Electrons injected from the armchair lead into the junction is not valley polarized, but they can become valley polarized in the zigzag lead. There are Fermi energies, where the current in the zigzag lead is highly valley polarized and the junction is an efficient generator of valley polarized current. The features of the valley polarized current depend sensitively on the widths of the two leads, as well as the number of dimers in the armchair lead, because this number has a sensitive effect on the band structure of the armchair lead. When an external potential is applied to the junction, the energy range with high valley polarization is enlarged enhancing its function as a generator of highly valley polarized current. The scaling behavior found in other graphene devices is also found in L junctions, which means that the results presented here can be extended to junctions with larger dimensions after appropriate scaling of the energy.

Overlap junctions for high coherence superconducting qubits

Science.gov (United States)

Wu, X.; Long, J. L.; Ku, H. S.; Lake, R. E.; Bal, M.; Pappas, D. P.

2017-07-01

Fabrication of sub-micron Josephson junctions is demonstrated using standard processing techniques for high-coherence, superconducting qubits. These junctions are made in two separate lithography steps with normal-angle evaporation. Most significantly, this work demonstrates that it is possible to achieve high coherence with junctions formed on aluminum surfaces cleaned in situ by Ar plasma before junction oxidation. This method eliminates the angle-dependent shadow masks typically used for small junctions. Therefore, this is conducive to the implementation of typical methods for improving margins and yield using conventional CMOS processing. The current method uses electron-beam lithography and an additive process to define the top and bottom electrodes. Extension of this work to optical lithography and subtractive processes is discussed.

High-efficiency, monolithic, multi-bandgap, tandem photovoltaic energy converters

Science.gov (United States)

Wanlass, Mark W [Golden, CO

2011-11-29

A monolithic, multi-bandgap, tandem solar photovoltaic converter has at least one, and preferably at least two, subcells grown lattice-matched on a substrate with a bandgap in medium to high energy portions of the solar spectrum and at least one subcell grown lattice-mismatched to the substrate with a bandgap in the low energy portion of the solar spectrum, for example, about 1 eV.

Field modulation of the critical current in magnetic Josephson junctions

International Nuclear Information System (INIS)

Blamire, M G; Smiet, C B; Banerjee, N; Robinson, J W A

2013-01-01

The dependence of the critical current of a simple Josephson junction on the applied magnetic field is well known and, for a rectangular junction, gives rise to the classic ‘Fraunhofer’ modulation with periodic zeros at the fields that introduce a flux quantum into the junction region. Much recent work has been performed on Josephson junctions that contain magnetic layers. The magnetization of such layers introduces additional flux into the junction and, for large junction areas or strong magnetic materials, can significantly distort the modulation of the critical current and strongly suppress the maximum critical current. The growing interest in junctions that induce odd-frequency triplet pairing in a ferromagnet, and the need to make quantitative comparisons with theory, mean that a full understanding of the role of magnetic barriers in controlling the critical current is necessary. This paper analyses the effect of magnetism and various magnetic configurations on Josephson critical currents; the overall treatment applies to junctions of general shape, but the specific cases of square and rectangular junctions are considered. (paper)

Versatile multi-layer Josephson junction process for vortex molecules

Energy Technology Data Exchange (ETDEWEB)

Meckbach, Johannes Maximilian; Buehler, Simon; Merker, Michael; Il' in, Konstantin; Siegel, Michael [Institut fuer Mikro- und Nanoelektronische Systeme, KIT (Germany); Buckenmaier, Kai; Gaber, Tobias; Kienzle, Uta; Neumaier, Benjamin; Goldobin, Edward; Kleiner, Reinhold; Koelle, Dieter [Physikalisches Institut - Experimentalphysik II, Universitaet Tuebingen (Germany)

2012-07-01

In long Josephson junctions magnetic flux may penetrate the barrier resulting in a so-called Josephson-Vortex carrying one flux quantum Φ{sub 0}. In recent years a new type of Josephson-Vortex became available, which carries any arbitrary fraction Φ = -Φ{sub 0}κ/2π of magnetic flux. These fractional vortices (p-vortices) spontaneously appear at discontinuities of the Josephson phase along the junction, which in turn are created using a pair of current injectors. We present a new Nb/Al-AlO{sub x}/Nb process for the fabrication of Josephson junctions of very high quality. Placing two injector pairs along the strongly underdamped long junctions allows the investigation of fractional vortex molecules. The topological charge of each vortex and their interaction can be altered even during experiment by changing the individual injector currents. Vortex molecule states have been measured using asymmetric DC-SQUIDs coupled to the vortices by overlying pick-up loops. To uphold the p-vortices we use persistent currents, which can be altered using heat switches. Fractional vortex molecules are promising candidates for a new type of qubits.

High-speed carrier-depletion silicon Mach-Zehnder optical modulators with lateral PN junctions

Directory of Open Access Journals (Sweden)

Graham Trevor Reed

2014-12-01

Full Text Available This paper presents new experimental data from a lateral PN junction silicon Mach-Zehnder optical modulator. Efficiencies in the 1.4V.cm to 1.9V.cm range are demonstrated for drive voltages between 0V and 6V. High speed operation up to 52Gbit/s is also presented. The performance of the device which has its PN junction positioned in the centre of the waveguide is then compared to previously reported data from a lateral PN junction device with the junction self-aligned to the edge of the waveguide rib. An improvement in modulation efficiency is demonstrated when the junction is positioned in the centre of the waveguide. Finally we propose schemes for achieving high modulation efficiency whilst retaining self-aligned formation of the PN junction.

Branching in current-voltage characteristics of intrinsic Josephson junctions

International Nuclear Information System (INIS)

Shukrinov, Yu M; Mahfouzi, F

2007-01-01

We study branching in the current-voltage characteristics of the intrinsic Josephson junctions of high-temperature superconductors in the framework of the capacitively coupled Josephson junction model with diffusion current. A system of dynamical equations for the gauge-invariant phase differences between superconducting layers for a stack of ten intrinsic junctions has been numerically solved. We have obtained a total branch structure in the current-voltage characteristics. We demonstrate the existence of a 'breakpoint region' on the current-voltage characteristics and explain it as a result of resonance between Josephson and plasma oscillations. The effect of the boundary conditions is investigated. The existence of two outermost branches and correspondingly two breakpoint regions for the periodic boundary conditions is shown. One branch, which is observed only at periodic boundary conditions, corresponds to the propagating of the plasma mode. The second one corresponds to the situation when the charge oscillations on the superconducting layers are absent, excluding the breakpoint. A time dependence of the charge oscillations at breakpoints is presented

Five-Junction Solar Cell Optimization Using Silvaco Atlas

Science.gov (United States)

2017-09-01

SOLAR CELL OPTIMIZATION USING SILVACO ATLAS by Raymond J. Kilway II September 2017 Thesis Advisor: Sherif Michael Second Reader: Matthew......12b. DISTRIBUTION CODE 13. ABSTRACT (maximum 200 words) Multi-junction solar cells have given rise to compact high-efficiency photovoltaic

High performance as-grown and annealed high band gap tunnel junctions: Te behavior at the interface

Energy Technology Data Exchange (ETDEWEB)

Bedair, S. M., E-mail: bedair@ncsu.edu; Harmon, Jeffrey L.; Carlin, C. Zachary; Hashem Sayed, Islam E.; Colter, P. C. [Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States)

2016-05-16

The performance of n{sup +}-InGaP(Te)/p{sup +}-AlGaAs(C) high band gap tunnel junctions (TJ) is critical for achieving high efficiency in multijunction photovoltaics. Several limitations for as grown and annealed TJ can be attributed to the Te doping of InGaP and its behavior at the junction interface. Te atoms in InGaP tend to get attached at step edges, resulting in a Te memory effect. In this work, we use the peak tunneling current (J{sub pk}) in this TJ as a diagnostic tool to study the behavior of the Te dopant at the TJ interface. Additionally, we used our understanding of Te behavior at the interface, guided by device modeling, to modify the Te source shut-off procedure and the growth rate. These modifications lead to a record performance for both the as-grown (2000 A/cm{sup 2}) and annealed (1000 A/cm{sup 2}) high band gap tunnel junction.

The nonideality coefficient of current-voltage characteristics for p-n junctions in a high ultrahigh-frequency (microwave) field

International Nuclear Information System (INIS)

Shamirzaev, S. H.; Gulyamov, G.; Dadamirzaev, M. G.; Gulyamov, A. G.

2009-01-01

The effect of heating of electrons and holes on the nonideality coefficient of the current-voltage characteristic for a p-n junction in a high microwave field is studied. It is established that the nonideality coefficient for a diode depends on the type of charge carriers that make the major contribution to the current in the p-n junction. It is shown that, in some cases in silicon samples, the nonideality coefficient for the diode is governed by the temperature for holes in spite of the fact that the temperature for electrons is higher than the temperature for holes.

Low-Cost Multi-Junction Photovoltaic Cells, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — The proposed SBIR project will provide a pathway to dramatically reduce the cost of multi-junction solar cells. The project leverages a TRL6 micropackaging process...

Exceptionally omnidirectional broadband light harvesting scheme for multi-junction concentrator solar cells achieved via ZnO nanoneedles

KAUST Repository

Yeh, Li-Ko; Tian, Wei-Cheng; Lai, Kun-Yu; He, Jr-Hau

2016-01-01

GaInP/GaAs/Ge triple-junction concentrator solar cells with significant efficiency enhancement were demonstrated with antireflective ZnO nanoneedles. The novel nanostructure was attained with a Zn(NO3)2-based solution containing vitamin C. Under one sun AM 1.5G solar spectrum, conversion efficiency of the triple-junction device was improved by 23.7% via broadband improvement in short-circuit currents of 3 sub-cells after the coverage by the nanoneedles with a graded refractive index profile. The efficiency enhancement further went up to 45.8% at 100 suns. The performance boost through the nanoneedles also became increasingly pronounced in the conditions of high incident angles and the cloudy weather, e.g. 220.0% of efficiency enhancement was observed at the incident angle of 60°. These results were attributed to the exceptional broadband omnidirectionality of the antireflective nanoneedles.

Exceptionally omnidirectional broadband light harvesting scheme for multi-junction concentrator solar cells achieved via ZnO nanoneedles

KAUST Repository

Yeh, Li-Ko

2016-12-14

GaInP/GaAs/Ge triple-junction concentrator solar cells with significant efficiency enhancement were demonstrated with antireflective ZnO nanoneedles. The novel nanostructure was attained with a Zn(NO3)2-based solution containing vitamin C. Under one sun AM 1.5G solar spectrum, conversion efficiency of the triple-junction device was improved by 23.7% via broadband improvement in short-circuit currents of 3 sub-cells after the coverage by the nanoneedles with a graded refractive index profile. The efficiency enhancement further went up to 45.8% at 100 suns. The performance boost through the nanoneedles also became increasingly pronounced in the conditions of high incident angles and the cloudy weather, e.g. 220.0% of efficiency enhancement was observed at the incident angle of 60°. These results were attributed to the exceptional broadband omnidirectionality of the antireflective nanoneedles.

High-efficiency resonant coupled wireless power transfer via tunable impedance matching

Science.gov (United States)

Anowar, Tanbir Ibne; Barman, Surajit Das; Wasif Reza, Ahmed; Kumar, Narendra

2017-10-01

For magnetic resonant coupled wireless power transfer (WPT), the axial movement of near-field coupled coils adversely degrades the power transfer efficiency (PTE) of the system and often creates sub-resonance. This paper presents a tunable impedance matching technique based on optimum coupling tuning to enhance the efficiency of resonant coupled WPT system. The optimum power transfer model is analysed from equivalent circuit model via reflected load principle, and the adequate matching are achieved through the optimum tuning of coupling coefficients at both the transmitting and receiving end of the system. Both simulations and experiments are performed to evaluate the theoretical model of the proposed matching technique, and results in a PTE over 80% at close coil proximity without shifting the original resonant frequency. Compared to the fixed coupled WPT, the extracted efficiency shows 15.1% and 19.9% improvements at the centre-to-centre misalignment of 10 and 70 cm, respectively. Applying this technique, the extracted S21 parameter shows more than 10 dB improvements at both strong and weak couplings. Through the developed model, the optimum coupling tuning also significantly improves the performance over matching techniques using frequency tracking and tunable matching circuits.

Organic tandem and multi-junction solar cells

NARCIS (Netherlands)

Hadipour, Afshin; de Boer, Bert; Blom, Paul W. M.

2008-01-01

The emerging field of stacked layers (double- and even multi-layers) in organic photovoltaic cells is reviewed. Owing to the limited absorption width of organic molecules and polymers, only a small fraction of the solar flux can be harvested by a single-layer bulk hetero-junction photovoltaic cell.

Josephson junction analog and quasiparticle-pair current

DEFF Research Database (Denmark)

Bak, Christen Kjeldahl; Pedersen, Niels Falsig

1973-01-01

A close analogy exists between a Josephson junction and a phase-locked loop. A new type of electrical analog based on this principle is presented. It is shown that the inclusion in this analog of a low-pass filter gives rise to a current of the same form as the Josephson quasiparticle-pair current....... A simple picture of the quasiparticle-pair current, which gives the right dependences, is obtained by assuming a junction cutoff frequency to be at the energy gap. ©1973 American Institute of Physics...

Mechanically Stacked Dual-Junction and Triple-Junction III-V/Si-IBC Cells with Efficiencies Exceeding 31.5% and 35.4%: Preprint

Energy Technology Data Exchange (ETDEWEB)

Schnabel, Manuel [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Tamboli, Adele C [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Warren, Emily L [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Schulte-Huxel, Henning [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Klein, Talysa [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Van Hest, Marinus F [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Geisz, John F [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Stradins, Paul [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Steiner, Myles A [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Rienaecker, Michael [Institute for Solar Energy Research Hamelin (ISFH); Merkle, Agnes [Institute for Solar Energy Research Hamelin (ISFH); Kajari-Schroeder, S. [Institute for Solar Energy Research Hamelin (ISFH); Niepelt, Raphael [Institute for Solar Energy Research Hamelin (ISFH); Schmidt, Jan [Institute for Solar Energy Research Hamelin (ISFH); Leibniz Universitat Hannover; Brendel, Rolf [Institute for Solar Energy Research Hamelin (ISFH); Leibniz Universitat Hannover; Peibst, Robby [Institute for Solar Energy Research Hamelin (ISFH); Leibniz Universitat Hannover

2017-10-02

Despite steady advancements in the efficiency of crystalline Silicon (c-Si) photovoltaics (PV) within the last decades, the theoretical efficiency limit of 29.4 percent depicts an insurmountable barrier for silicon-based single-junction solar cells. Combining the Si cell with a second absorber material on top in a dual junction tandem or triple junction solar cell is an attractive option to surpass this limit significantly. We demonstrate a mechanically stacked GaInP/Si dual-junction cell with an in-house measured efficiency of 31.5 percent and a GaInP/GaAs/Si triple-junction cell with a certified efficiency of 35.4 percent.

Molecular beam epitaxy of InP single junction and InP/In0.53Ga0.47As monolithically integrated tandem solar cells using solid phosphorous source material

International Nuclear Information System (INIS)

Delaney, A.; Chin, K.; Street, S.; Newman, F.; Aguilar, L.; Ignatiev, A.; Monier, C.; Velela, M.; Freundlich, A.

1998-01-01

This work reports the first InP solar cells, InP/In 0.53 Ga 0.47 As tandem solar cells and InP tunnel junctions to be grown using a solid phosphorous source cracker cell in a molecular beam epitaxy system. High p-type doping achieved with this system allowed for the development of InP tunnel junctions. These junctions which allow for improved current matching in subsequent monolithically integrated tandem devices also do not absorb photons which can be utilized in the InGaAs structure. Photocurrent spectral responses compared favorably to devices previously grown in a chemical beam epitaxy system. High resolution x-ray scans demonstrated good lattice matching between constituent parts of the tandem cell. AM0 efficiencies of both InP and InP/InGaAs tandem cells are reported

Pathway to 50% Efficient Inverted Metamorphic Concentrator Solar Cells

Energy Technology Data Exchange (ETDEWEB)

Geisz, John F [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Steiner, Myles A [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Jain, Nikhil [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Schulte, Kevin L [National Renewable Energy Laboratory (NREL), Golden, CO (United States); France, Ryan M [National Renewable Energy Laboratory (NREL), Golden, CO (United States); McMahon, William E [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Perl, Emmett [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Horowitz, Kelsey A [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Friedman, Daniel J [National Renewable Energy Laboratory (NREL), Golden, CO (United States)

2017-09-06

Series-connected five (5J) and six junction (6J) concentrator solar cell strategies have the realistic potential to exceed 50% efficiency to enable low-cost CPV systems. We propose three strategies for developing a practical 6J device. We have overcome many of the challenges required to build such concentrator solar cell devices: We have developed 2.1 eV AlGaInP, 1.7 eV AlGaAs, and 1.7 eV GaInAsP junctions with external radiative efficiency greater than 0.1%. We have developed a transparent tunnel junction that absorbs minimal light intended for the second junction yet resists degradation under thermal load. We have developed metamorphic grades from the GaAs to the InP lattice constant that are transparent to sub-GaAs bandgap light. We have grown and compared low bandgap junctions (0.7eV - 1.2 eV) using metamorphic GaInAs, metamorphic GaInAsP, and GaInAsP lattice-matched to InP. And finally, we have demonstrated excellent performance in a high voltage, low current 4 junction inverted metamorphic device using 2.1, 1.7, 1.4, and 1.1 eV junctions with over 8.7 mA/cm2 one-sun current density that operates up to 1000 suns without tunnel junction failure.

Electron-beam damaged high-temperature superconductor Josephson junctions

International Nuclear Information System (INIS)

Pauza, A.J.; Booij, W.E.; Herrmann, K.; Moore, D.F.; Blamire, M.G.; Rudman, D.A.; Vale, L.R.

1997-01-01

Results are presented on the fabrication and characterization of high critical temperature Josephson junctions in thin films of YBa 2 Cu 3 O 7-δ produced by the process of focused electron-beam irradiation using 350 keV electrons. The junctions so produced have uniform spatial current densities, can be described in terms of the resistive shunted junction model, and their current densities can be tailored for a given operating temperature. The physical properties of the damaged barrier can be described as a superconducting material of either reduced or zero critical temperature (T c ), which has a length of ∼15nm. The T c reduction is caused primarily by oxygen Frenkel defects in the Cu - O planes. The large beam currents used in the fabrication of the junctions mean that the extent of the barrier is limited by the incident electron-beam diameter, rather than by scattering within the film. The properties of the barrier can be calculated using a superconductor/normal/superconductor (SNS) junction model with no boundary resistance. From the SNS model, we can predict the scaling of the critical current resistance (I c R n ) product and gain insight into the factors controlling the junction properties, T c , and reproducibility. From the measured I c R n scaling data, we can predict the I c R n product of a junction at a given operating temperature with a given current density. I c R n products of ∼2mV can be achieved at 4.2 K. The reproducibility of several junctions in a number of samples can be characterized by the ratio of the maximum-to-minimum critical currents on the same substrate of less than 1.4. Stability over several months has been demonstrated at room and refrigerator temperatures (297 and 281 K) for junctions that have been initially over damaged and then annealed at temperatures ∼380K. (Abstract Truncated)

Field emission current from a junction field-effect transistor

International Nuclear Information System (INIS)

Monshipouri, Mahta; Abdi, Yaser

2015-01-01

Fabrication of a titanium dioxide/carbon nanotube (TiO 2 /CNT)-based transistor is reported. The transistor can be considered as a combination of a field emission transistor and a junction field-effect transistor. Using direct current plasma-enhanced chemical vapor deposition (DC-PECVD) technique, CNTs were grown on a p-typed (100)-oriented silicon substrate. The CNTs were then covered by TiO 2 nanoparticles 2–5 nm in size, using an atmospheric pressure CVD technique. In this device, TiO 2 /CNT junction is responsible for controlling the emission current. High on/off-current ratio and proper gate control are the most important advantages of device. A model based on Fowler–Nordheim equation is utilized for calculation of the emission current and the results are compared with experimental data. The effect of TiO 2 /CNT hetero-structure is also investigated, and well modeled

High Efficiency Nanostructured III-V Photovoltaics for Solar Concentrator Application

Energy Technology Data Exchange (ETDEWEB)

Hubbard, Seth

2012-09-12

The High Efficiency Nanostructured III-V Photovoltaics for Solar Concentrators project seeks to provide new photovoltaic cells for Concentrator Photovoltaics (CPV) Systems with higher cell efficiency, more favorable temperature coefficients and less sensitivity to changes in spectral distribution. The main objective of this project is to provide high efficiency III-V solar cells that will reduce the overall cost per Watt for power generation using CPV systems.This work is focused both on a potential near term application, namely the use of indium arsenide (InAs) QDs to spectrally "tune" the middle (GaAs) cell of a SOA triple junction device to a more favorable effective bandgap, as well as the long term goal of demonstrating intermediate band solar cell effects. The QDs are confined within a high electric field i-region of a standard GaAs solar cell. The extended absorption spectrum (and thus enhanced short circuit current) of the QD solar cell results from the increase in the sub GaAs bandgap spectral response that is achievable as quantum dot layers are introduced into the i-region. We have grown InAs quantum dots by OMVPE technique and optimized the QD growth conditions. Arrays of up to 40 layers of strain balanced quantum dots have been experimentally demonstrated with good material quality, low residual stain and high PL intensity. Quantum dot enhanced solar cells were grown and tested under simulated one sun AM1.5 conditions. Concentrator solar cells have been grown and fabricated with 5-40 layers of QDs. Testing of these devices show the QD cells have improved efficiency compared to baseline devices without QDs. Device modeling and measurement of thermal properties were performed using Crosslight APSYS. Improvements in a triple junction solar cell with the insertion of QDs into the middle current limiting junction was shown to be as high as 29% under one sun illumination for a 10 layer stack QD enhanced triple junction solar cell. QD devices have strong

Stability of fluxon motion in long Josephson junctions at high bias

DEFF Research Database (Denmark)

Pagano, S.; Sørensen, Mads Peter; Christiansen, Peter Leth

1988-01-01

In long Josephson junctions the motion of fluxons is revealed by the existence of current steps, zero-field steps, in the current-voltage characteristics. In this paper we investigate the stability of the fluxon motion when high values of the current bias are involved. The investigation is carried...... dissipations and of the junction length on the switching-current value is investigated. A simple boundary model is able to describe, for junctions of overlap geometry, the qualitative dependence of the switching current on the system parameters....

A High-Efficiency Isolated LCLC Multi-Resonant Three-Port Bidirectional DC-DC Converter

Directory of Open Access Journals (Sweden)

Cheng-Shan Wang

2017-07-01

Full Text Available In this paper, an isolated multi-resonant three-port bidirectional direct current-direct current (DC-DC converter is proposed, which is composed of three full bridges, two inductor-capacitor-inductor-capacitor (LCLC multi-resonant tanks and a three-winding transformer. The phase shift control method is employed to manage the power transmission among three ports. Relying on the appropriate parameter selection, both of the fundamental and the third order power can be delivered through the multi-element LCLC resonant tanks, and consequently, it contributes to restrained circulating energy and the desirable promoted efficiency. Besides, by adjusting the driving frequency under different load conditions, zero-voltage-switching (ZVS characteristics of all the switches of three ports are guaranteed. Therefore, lower switching loss and higher efficiency are achieved in full load range. In order to verify the feasibility of the proposed topology, a 1.5 kW prototype is established, of which the maximum efficiencies under forward and reverse operating conditions are 96.7% and 96.9% respectively. In addition, both of the bidirectional efficiencies maintain higher than 95.5% when the power level is above 0.5 kW.

Highly efficient red electrophosphorescent devices at high current densities

International Nuclear Information System (INIS)

Wu Youzhi; Zhu Wenqing; Zheng Xinyou; Sun, Runguang; Jiang Xueyin; Zhang Zhilin; Xu Shaohong

2007-01-01

Efficiency decrease at high current densities in red electrophosphorescent devices is drastically restrained compared with that from conventional electrophosphorescent devices by using bis(2-methyl-8-quinolinato)4-phenylphenolate aluminum (BAlq) as a hole and exciton blocker. Ir complex, bis(2-(2'-benzo[4,5-α]thienyl) pyridinato-N,C 3' ) iridium (acetyl-acetonate) is used as an emitter, maximum external quantum efficiency (QE) of 7.0% and luminance of 10000cd/m 2 are obtained. The QE is still as high as 4.1% at higher current density J=100mA/cm 2 . CIE-1931 co-ordinates are 0.672, 0.321. A carrier trapping mechanism is revealed to dominate in the process of electroluminescence

Field emission current from a junction field-effect transistor

Energy Technology Data Exchange (ETDEWEB)

Monshipouri, Mahta; Abdi, Yaser, E-mail: y.abdi@ut.ac.ir [University of Tehran, Nano-Physics Research Laboratory, Department of Physics (Iran, Islamic Republic of)

2015-04-15

Fabrication of a titanium dioxide/carbon nanotube (TiO{sub 2}/CNT)-based transistor is reported. The transistor can be considered as a combination of a field emission transistor and a junction field-effect transistor. Using direct current plasma-enhanced chemical vapor deposition (DC-PECVD) technique, CNTs were grown on a p-typed (100)-oriented silicon substrate. The CNTs were then covered by TiO{sub 2} nanoparticles 2–5 nm in size, using an atmospheric pressure CVD technique. In this device, TiO{sub 2}/CNT junction is responsible for controlling the emission current. High on/off-current ratio and proper gate control are the most important advantages of device. A model based on Fowler–Nordheim equation is utilized for calculation of the emission current and the results are compared with experimental data. The effect of TiO{sub 2}/CNT hetero-structure is also investigated, and well modeled.

The critical current of point symmetric Josephson tunnel junctions

International Nuclear Information System (INIS)

Monaco, Roberto

2016-01-01

Highlights: • We disclose some geometrical properties of the critical current field dependence that apply to a large class of Josephson junctions characterized by a point symmetric shape. • The developed theory is valid for any orientation of the applied magnetic field, therefore it allows the determine the consequences of field misalignment in the experimental setups. • We also address that the threshold curves of Josephson tunnel junctions with complex shapes can be expressed as a linear combination of the threshold curves of junctions with simpler point symmetric shapes. - Abstract: The physics of Josephson tunnel junctions drastically depends on their geometrical configurations. The shape of the junction determines the specific form of the magnetic-field dependence of its Josephson current. Here we address the magnetic diffraction patterns of specially shaped planar Josephson tunnel junctions in the presence of an in-plane magnetic field of arbitrary orientations. We focus on a wide ensemble of junctions whose shape is invariant under point reflection. We analyze the implications of this type of isometry and derive the threshold curves of junctions whose shape is the union or the relative complement of two point symmetric plane figures.

Detection of MM.-radiation with high current density submicron niobium-niobium Josephson junctions

International Nuclear Information System (INIS)

Daalmans, G.M.; Graauw, T. de; Lidholm, S.; Vliet, F. v.

1980-01-01

The rf-induced step heights in submicron niobium-niobium Josephson junctions are in good agreement with Russer theory at 230 and 240 GHz. At 115 and 460 GHz the agreement is less but still reasonably good. The junction noise without rf-bias is within a factor of two equal to the theoretical limit. With rf-bias applied it can be equal to the theoretical limit within a factor of two. The maximum conversion efficiency measured at 230 GHz was 0.18 and the lowest single side band mixer noise temperature at the same frequency was 380 K. Saturation effects are limiting the performance of the mixer. Improvements in eta and Tsub(M) of a factor of two can be expected by eliminating these saturation effects. The mixer which has been studied most extensively starting at 12-3-80 is still alive at 5-6-80 after many cooling cycles, storage at room temperature and soldering in and out of the dewar. The reliability of this type of junction cannot be questionable anymore. (orig.)

Radiation resistant low bandgap InGaAsP solar cell for multi-junction solar cells

International Nuclear Information System (INIS)

Khan, Aurangzeb; Yamaguchi, Masafumi; Dharmaras, Nathaji; Yamada, Takashi; Tanabe, Tatsuya; Takagishi, Shigenori; Itoh, Hisayoshi; Ohshima, Takeshi

2001-01-01

We have explored the superior radiation tolerance of metal organic chemical vapor deposition (MOCVD) grown, low bandgap, (0.95eV) InGaAsP solar cells as compared to GaAs-on-Ge cells, after 1 MeV electron irradiation. The minority carrier injection due to forward bias and light illumination under low concentration ratio, can lead to enhanced recovery of radiation damage in InGaAsP n + -p junction solar cells. An injection anneal activation energy (0.58eV) of the defects involved in damage/recovery of the InGaAsP solar cells has been estimated from the resultant recovery of the solar cell properties following minority carrier injection. The results suggest that low bandgap radiation resistant InGaAsP (0.95eV) lattice matched to InP substrates provide an alternative to use as bottom cells in multi-junction solar cells instead of less radiation ressitant conventional GaAs based solar cells for space applications. (author)

Rectified tunneling current response of bio-functionalized metal-bridge-metal junctions.

Science.gov (United States)

Liu, Yaqing; Offenhäusser, Andreas; Mayer, Dirk

2010-01-15

Biomolecular bridged nanostructures allow direct electrical addressing of electroactive biomolecules, which is of interest for the development of bioelectronic and biosensing hybrid junctions. In the present paper, the electroactive biomolecule microperoxidase-11 (MP-11) was integrated into metal-bridge-metal (MBM) junctions assembled from a scanning tunneling microscope (STM) setup. Before immobilization of MP-11, the Au working electrode was first modified by a self-assembled monolayer of 1-undecanethiol (UDT). A symmetric and potential independent response of current-bias voltage (I(t)/V(b)) was observed for the Au (substrate)/UDT/Au (tip) junction. However, the I(t)/V(b) characteristics became potential dependent and asymmetrical after binding of MP-11 between the electrodes of the junction. The rectification ratio of the asymmetric current response varies with gate electrode modulation. A resonant tunneling process between metal electrode and MP-11 enhances the tunneling current and is responsible for the observed rectification. Our investigations demonstrated that functional building blocks of proteins can be reassembled into new conceptual devices with operation modes deviating from their native function, which could prove highly useful in the design of future biosensors and bioelectronic devices. Copyright 2009 Elsevier B.V. All rights reserved.

Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance.

Science.gov (United States)

Wang, Mengxing; Cai, Wenlong; Cao, Kaihua; Zhou, Jiaqi; Wrona, Jerzy; Peng, Shouzhong; Yang, Huaiwen; Wei, Jiaqi; Kang, Wang; Zhang, Youguang; Langer, Jürgen; Ocker, Berthold; Fert, Albert; Zhao, Weisheng

2018-02-14

Perpendicular magnetic tunnel junctions based on MgO/CoFeB structures are of particular interest for magnetic random-access memories because of their excellent thermal stability, scaling potential, and power dissipation. However, the major challenge of current-induced switching in the nanopillars with both a large tunnel magnetoresistance ratio and a low junction resistance is still to be met. Here, we report spin transfer torque switching in nano-scale perpendicular magnetic tunnel junctions with a magnetoresistance ratio up to 249% and a resistance area product as low as 7.0 Ω µm 2 , which consists of atom-thick W layers and double MgO/CoFeB interfaces. The efficient resonant tunnelling transmission induced by the atom-thick W layers could contribute to the larger magnetoresistance ratio than conventional structures with Ta layers, in addition to the robustness of W layers against high-temperature diffusion during annealing. The critical switching current density could be lower than 3.0 MA cm -2 for devices with a 45-nm radius.

Fluctuation of heat current in Josephson junctions

Directory of Open Access Journals (Sweden)

P. Virtanen

2015-02-01

Full Text Available We discuss the statistics of heat current between two superconductors at different temperatures connected by a generic weak link. As the electronic heat in superconductors is carried by Bogoliubov quasiparticles, the heat transport fluctuations follow the Levitov–Lesovik relation. We identify the energy-dependent quasiparticle transmission probabilities and discuss the resulting probability density and fluctuation relations of the heat current. We consider multichannel junctions, and find that heat transport in diffusive junctions is unique in that its statistics is independent of the phase difference between the superconductors.

Performance of multi-junction cells due to illumination distribution across the cell surface

International Nuclear Information System (INIS)

Schultz, R.D.; Vorster, F.J; Dyk, E.E van

2012-01-01

This paper addresses the influence of illumination distribution on the performance of a high concentration photovoltaic (HCPV) module. CPV systems comprise of optical elements as well as mechanical tracking to concentrate the solar flux onto the solar receiver as well as to keep the system on track with the sun. The performance of the subcells of the multi-junction concentrator cell depends on the optical alignment of the system. Raster scanning of the incident intensity in the optical plane of the receiver and corresponding I–V measurements were used to investigate the influence of illumination distribution on performance. The results show that the illumination distribution that differs between cells does affect the performance of the module. The performance of the subcells of the multi-junction concentrator cell also depends on the optical alignment of the system.

Performance of multi-junction cells due to illumination distribution across the cell surface

Energy Technology Data Exchange (ETDEWEB)

Schultz, R.D., E-mail: s206029578@live.nmmu.ac.za [Nelson Mandela University, Physics Department, P.O. Box 77000, 6031, Port Elizabeth (South Africa); Vorster, F.J; Dyk, E.E van [Nelson Mandela University, Physics Department, P.O. Box 77000, 6031, Port Elizabeth (South Africa)

2012-05-15

This paper addresses the influence of illumination distribution on the performance of a high concentration photovoltaic (HCPV) module. CPV systems comprise of optical elements as well as mechanical tracking to concentrate the solar flux onto the solar receiver as well as to keep the system on track with the sun. The performance of the subcells of the multi-junction concentrator cell depends on the optical alignment of the system. Raster scanning of the incident intensity in the optical plane of the receiver and corresponding I-V measurements were used to investigate the influence of illumination distribution on performance. The results show that the illumination distribution that differs between cells does affect the performance of the module. The performance of the subcells of the multi-junction concentrator cell also depends on the optical alignment of the system.

Action detection by double hierarchical multi-structure space-time statistical matching model

Science.gov (United States)

Han, Jing; Zhu, Junwei; Cui, Yiyin; Bai, Lianfa; Yue, Jiang

2018-03-01

Aimed at the complex information in videos and low detection efficiency, an actions detection model based on neighboring Gaussian structure and 3D LARK features is put forward. We exploit a double hierarchical multi-structure space-time statistical matching model (DMSM) in temporal action localization. First, a neighboring Gaussian structure is presented to describe the multi-scale structural relationship. Then, a space-time statistical matching method is proposed to achieve two similarity matrices on both large and small scales, which combines double hierarchical structural constraints in model by both the neighboring Gaussian structure and the 3D LARK local structure. Finally, the double hierarchical similarity is fused and analyzed to detect actions. Besides, the multi-scale composite template extends the model application into multi-view. Experimental results of DMSM on the complex visual tracker benchmark data sets and THUMOS 2014 data sets show the promising performance. Compared with other state-of-the-art algorithm, DMSM achieves superior performances.

AlGaAs/InGaAlP tunnel junctions for multijunction solar cells

Energy Technology Data Exchange (ETDEWEB)

SHARPS,P.R.; LI,N.Y.; HILLS,J.S.; HOU,H.; CHANG,PING-CHIH; BACA,ALBERT G.

2000-05-16

Optimization of GaInP{sub 2}/GaAs dual and GaInP{sub 2}/GaAs/Ge triple junction cells, and development of future generation monolithic multi-junction cells will involve the development of suitable high bandgap tunnel junctions. There are three criteria that a tunnel junction must meet. First, the resistance of the junction must be kept low enough so that the series resistance of the overall device is not increased. For AMO, 1 sun operation, the tunnel junction resistance should be below 5 x 10{sup {minus}2} {Omega}-cm. Secondly, the peak current density for the tunnel junction must also be larger than the J{sub sc} of the cell so that the tunnel junction I-V curve does not have a deleterious effect on the I-V curve of the multi-junction device. Finally, the tunnel junction must be optically transparent, i.e., there must be a minimum of optical absorption of photons that will be collected by the underlying subcells. The paper reports the investigation of four high bandgap tunnel junctions grown by metal-organic chemical vapor deposition.

Multi-image Matching of Airborne SAR Imagery by SANCC

Directory of Open Access Journals (Sweden)

DING Hao

2015-03-01

Full Text Available In order to improve accuracy of SAR matching, a multi-image matching method based on sum of adaptive normalized cross-correlation (SANCC is proposed. It utilizes geometrical and radiometric information of multi-baselinesynthetic aperture radar (SARimages effectively. Firstly, imaging parameters, platform parameters and approximate digital surface model (DSM are used to predict matching line. Secondly, similarity and proximity in Gestalt theory are introduced to SANCC, and SANCC measures of potential matching points along the matching line are calculated. Thirdly, multi-image matching results and object coordinates of matching points are obtained by winner-take-all (WTA optimization strategy. The approach has been demonstrated with airborne SAR images acquired by a Chinese airborne SAR system (CASMSAR system. The experimental results indicate that the proposed algorithm is effective for providing dense and accuracy matching points, reducing the number of mismatches caused by repeated textures, and offering a better solution to match in poor textured areas.

Optimized electrode configuration for current-in-plane characterization of magnetic tunnel junction stacks

DEFF Research Database (Denmark)

Cagliani, Alberto; Kjær, Daniel; Østerberg, Frederik Westergaard

2017-01-01

The current-in-plane tunneling technique (CIPT) has been a crucial tool in the development of magnetic tunnel junction stacks suitable for magnetic random access memories (MRAM) for more than a decade. The MRAM development has now reached the maturity to make the transition from the R&D phase...... of electrodes on a multi-electrode probe to reach up to 36% improvement on the repeatability for the resistance area product and the tunneling magnetoresistance measurement, without any hardware modification....

Interaction between fractional Josephson vortices in multi-gap superconductor tunnel junctions

Science.gov (United States)

Kim, Ju H.

In a long Josephson junction (LJJ) with two-band superconductors, fractionalization of Josephson vortices (fluxons) can occur in the broken time reversal symmetry state when spatial phase textures (i-solitons) are excited. Excitation of i-solitons in each superconductor layer of the junction, arising due to the presence of two condensates and the interband Josephson effect, leads to spatial variation of the critical current density between the superconductor layers. Similar to the situation in a YBa2 Cu3O7 - x superconductor film grain boundary, this spatial dependence of the crtitical current density can self-generate magnetic flux in the insulator layer, resulting in fractional fluxons with large and small fraction of flux quantum. Similar to fluxons in one-band superconductor LJJ, these fractional fluxons are found to interact with each other. The interaction between large and small fractional fluxons determines the size of a fluxon which includes two (one large and one small) fractional fluxons. We discuss the nature of interaction between fractional fluxons and suggest that i-soliton excitations in multi-gap superconductor LJJs may be probed by using magnetic flux measurements.

Multi-petascale highly efficient parallel supercomputer

Science.gov (United States)

Asaad, Sameh; Bellofatto, Ralph E.; Blocksome, Michael A.; Blumrich, Matthias A.; Boyle, Peter; Brunheroto, Jose R.; Chen, Dong; Cher, Chen-Yong; Chiu, George L.; Christ, Norman; Coteus, Paul W.; Davis, Kristan D.; Dozsa, Gabor J.; Eichenberger, Alexandre E.; Eisley, Noel A.; Ellavsky, Matthew R.; Evans, Kahn C.; Fleischer, Bruce M.; Fox, Thomas W.; Gara, Alan; Giampapa, Mark E.; Gooding, Thomas M.; Gschwind, Michael K.; Gunnels, John A.; Hall, Shawn A.; Haring, Rudolf A.; Heidelberger, Philip; Inglett, Todd A.; Knudson, Brant L.; Kopcsay, Gerard V.; Kumar, Sameer; Mamidala, Amith R.; Marcella, James A.; Megerian, Mark G.; Miller, Douglas R.; Miller, Samuel J.; Muff, Adam J.; Mundy, Michael B.; O'Brien, John K.; O'Brien, Kathryn M.; Ohmacht, Martin; Parker, Jeffrey J.; Poole, Ruth J.; Ratterman, Joseph D.; Salapura, Valentina; Satterfield, David L.; Senger, Robert M.; Steinmacher-Burow, Burkhard; Stockdell, William M.; Stunkel, Craig B.; Sugavanam, Krishnan; Sugawara, Yutaka; Takken, Todd E.; Trager, Barry M.; Van Oosten, James L.; Wait, Charles D.; Walkup, Robert E.; Watson, Alfred T.; Wisniewski, Robert W.; Wu, Peng

2018-05-15

A Multi-Petascale Highly Efficient Parallel Supercomputer of 100 petaflop-scale includes node architectures based upon System-On-a-Chip technology, where each processing node comprises a single Application Specific Integrated Circuit (ASIC). The ASIC nodes are interconnected by a five dimensional torus network that optimally maximize the throughput of packet communications between nodes and minimize latency. The network implements collective network and a global asynchronous network that provides global barrier and notification functions. Integrated in the node design include a list-based prefetcher. The memory system implements transaction memory, thread level speculation, and multiversioning cache that improves soft error rate at the same time and supports DMA functionality allowing for parallel processing message-passing.

Ferroelectric tunnel junctions with multi-quantum well structures

Energy Technology Data Exchange (ETDEWEB)

Ma, Zhijun; Zhang, Tianjin, E-mail: zhangtj@hubu.edu.cn [Ministry of Education Key Laboratory for the Green Preparation and Application of Functional Materials, Hubei University, Wuhan 430062 (China); Hubei Collaborative Innovation Center for Advanced Organic Chemical Materials, Hubei University, Wuhan 430062 (China); Liang, Kun; Qi, Yajun; Wang, Duofa; Wang, Jinzhao; Jiang, Juan [Hubei Collaborative Innovation Center for Advanced Organic Chemical Materials, Hubei University, Wuhan 430062 (China)

2014-06-02

Ferroelectric tunnel junctions (FTJs) with multi-quantum well structures are proposed and the tunneling electroresistance (TER) effect is investigated theoretically. Compared with conventional FTJs with monolayer ferroelectric barriers, FTJs with single-well structures provide TER ratio improvements of one order of magnitude, while FTJs with optimized multi-well structures can enhance this improvement by another order of magnitude. It is believed that the increased resonant tunneling strength combined with appropriate asymmetry in these FTJs contributes to the improvement. These studies may help to fabricate FTJs with large TER ratio experimentally and put them into practice.

An ARC less InGaP/GaAs DJ solar cell with hetero tunnel junction

Science.gov (United States)

Sahoo, G. S.; Nayak, P. P.; Mishra, G. P.

2016-07-01

Multi junction solar cell has not achieved an optimum performance yet. To acquire more conversion efficiency research on multi junction solar cell are in progress. In this work we have proposed a dual junction solar cell with conversion efficiency of 43.603%. Mainly the focus is given on the tunnel diode, window layer and back surface field (BSF) layer of the cell, as all of them plays important role on the cell performance. Here we have designed a hetero InGaP/GaAs tunnel diode which makes tunnel diode more transparent to the bottom cell as well as reduces the recombination at the interfaces. The thickness of the window and BSF layer are optimized to achieve higher conversion efficiency. The simulation is carried out using Silvaco ATLAS TCAD under 1000 sun of AM1.5G spectrum. Different performance parameters of the cell like short circuit current density (Jsc), open circuit voltage (Voc), external quantum efficiency (EQE), fill factor (FF), conversion efficiency (η), spectral response and photogeneration rate of the cell are examined and compared with previously reported literatures. For the proposed model a Voc of 2.7043 V, Jsc of 1898.52 mA/cm2, FF of 88.88% and η of 43.6% are obtained.

Simulation of a high efficiency multi-bed adsorption heat pump

International Nuclear Information System (INIS)

TeGrotenhuis, W.E.; Humble, P.H.; Sweeney, J.B.

2012-01-01

Attaining high energy efficiency with adsorption heat pumps is challenging due to thermodynamic losses that occur when the sorbent beds are thermally cycled without effective heat recuperation. The multi-bed concept described here enables high efficiency by effectively transferring heat from beds being cooled to beds being heated. A simplified lumped-parameter model and detailed finite element analysis are used to simulate a sorption compressor, which is used to project the overall heat pump coefficient of performance. Results are presented for ammonia refrigerant and a nano-structured monolithic carbon sorbent specifically modified for the application. The effects of bed geometry and number of beds on system performance are explored, and the majority of the performance benefit is obtained with four beds. Results indicate that a COP of 1.24 based on heat input is feasible at AHRI standard test conditions for residential HVAC equipment. When compared on a basis of primary energy input, performance equivalent to SEER 13 or 14 are theoretically attainable with this system. - Highlights: ► A multi-bed concept for adsorption heat pumps is capable of high efficiency. ► Modeling is used to simulate sorption compressor and overall heat pump performance. ► Results are presented for ammonia refrigerant and a nano-structured monolithic carbon sorbent. ► The majority of the efficiency benefit is obtained with four beds. ► Predicted COP as high as 1.24 for cooling is comparable to SEER 13 or 14 for electric heat pumps.

High Efficiency Ka-Band Spatial Combiner

Directory of Open Access Journals (Sweden)

D. Passi

2014-12-01

Full Text Available A Ka-Band, High Efficiency, Small Size Spatial Combiner (SPC is proposed in this paper, which uses an innovatively matched quadruple Fin Lines to microstrip (FLuS transitions. At the date of this paper and at the Author's best knowledge no such FLuS innovative transitions have been reported in literature before. These transitions are inserted into a WR28 waveguide T-junction, in order to allow the integration of 16 Monolithic Microwave Integrated Circuit (MMIC Solid State Power Amplifiers (SSPA's. A computational electromagnetic model using the finite elements method has been implemented. A mean insertion loss of 2 dB is achieved with a return loss better the 10 dB in the 31-37 GHz bandwidth.

An ion-beam-assisted process for high-Tc Josephson junctions

International Nuclear Information System (INIS)

Huang, M.Q.; Chen, L.; Zhao, Z.X.; Yang, T.; Nie, J.C.; Wu, P.J.; Xiong, X.M.

1997-01-01

We have developed a non-ion-etching ion-beam-assisted-deposition (IBAD) process for fabricating high critical-temperature (T c ) grain boundary Josephson junctions through a photoresist liftoff mask. The YBa 2 Cu 3 O 7 (YBCO) junctions fabricated through this process exhibited the resistively-shunted-junction (RSJ)-like I - V characteristics. The well-defined Shapiro steps have been seen on the I - V curves under microwave radiation. The magnetic modulation of critical current of a 4 μm width YBCO junction tallied with the prior simulated Fraunhofer diffraction pattern of a Josephson junction with a spatially homogeneous critical current density. The maximum peak-to-peak modulation voltage across the dc superconducting quantum interference device (SQUID) fabricated by using these junctions reached up to 32 μV at 77 K. The magnetic modulation of the SQUID exhibited periodic behavior with the observed modulation period of 5.0x10 -4 G. copyright 1997 American Institute of Physics

Magnetic field behavior of current steps in long Josephson junctions

International Nuclear Information System (INIS)

Costabile, G.; Cucolo, A.M.; Pace, S.; Parmentier, R.D.; Savo, B.; Vaglio, R.

1980-01-01

The zero-field steps, or dc current singularities, in the current-voltage characteristics of long Josephson tunnel junctions, first reported by Chen et al., continue to attract research interest both because their study can provide fundamental information on the dynamics of fluxons in such junctions and because they are accompanied by the emission of microwave radiation from the junction, which may be exploitable in practical oscillator applications. The purpose of this paper is to report some experimental observations of the magnetic field behavior of the steps in junctions fabricated in our Laboratory and to offer a qualitative explanation for this behavior. Measurements have been made both for very long (L >> lambdasub(J)) and for slightly long (L approx. >= lambdasub(J)) junctions with a view toward comparing our results with those of other workers. (orig./WRI)

Composite Transparent Electrode of Graphene Nanowalls and Silver Nanowires on Micropyramidal Si for High-Efficiency Schottky Junction Solar Cells.

Science.gov (United States)

Jiao, Tianpeng; Liu, Jian; Wei, Dapeng; Feng, Yanhui; Song, Xuefen; Shi, Haofei; Jia, Shuming; Sun, Wentao; Du, Chunlei

2015-09-16

The conventional graphene-silicon Schottky junction solar cell inevitably involves the graphene growth and transfer process, which results in complicated technology, loss of quality of the graphene, extra cost, and environmental unfriendliness. Moreover, the conventional transfer method is not well suited to conformationally coat graphene on a three-dimensional (3D) silicon surface. Thus, worse interfacial conditions are inevitable. In this work, we directly grow graphene nanowalls (GNWs) onto the micropyramidal silicon (MP) by the plasma-enhanced chemical vapor deposition method. By controlling growth time, the cell exhibits optimal pristine photovoltaic performance of 3.8%. Furthermore, we improve the conductivity of the GNW electrode by introducing the silver nanowire (AgNW) network, which could achieve lower sheet resistance. An efficiency of 6.6% has been obtained for the AgNWs-GNWs-MP solar cell without any chemical doping. Meanwhile, the cell exhibits excellent stability exposed to air. Our studies show a promising way to develop simple-technology, low-cost, high-efficiency, and stable Schottky junction solar cells.

MEMORY EFFICIENT SEMI-GLOBAL MATCHING

Directory of Open Access Journals (Sweden)

H. Hirschmüller

2012-07-01

Full Text Available Semi-GlobalMatching (SGM is a robust stereo method that has proven its usefulness in various applications ranging from aerial image matching to driver assistance systems. It supports pixelwise matching for maintaining sharp object boundaries and fine structures and can be implemented efficiently on different computation hardware. Furthermore, the method is not sensitive to the choice of parameters. The structure of the matching algorithm is well suited to be processed by highly paralleling hardware e.g. FPGAs and GPUs. The drawback of SGM is the temporary memory requirement that depends on the number of pixels and the disparity range. On the one hand this results in long idle times due to the bandwidth limitations of the external memory and on the other hand the capacity bounds are quickly reached. A full HD image with a size of 1920 × 1080 pixels and a disparity range of 512 pixels requires already 1 billion elements, which is at least several GB of RAM, depending on the element size, wich are not available at standard FPGA- and GPUboards. The novel memory efficient (eSGM method is an advancement in which the amount of temporary memory only depends on the number of pixels and not on the disparity range. This permits matching of huge images in one piece and reduces the requirements of the memory bandwidth for real-time mobile robotics. The feature comes at the cost of 50% more compute operations as compared to SGM. This overhead is compensated by the previously idle compute logic within the FPGA and the GPU and therefore results in an overall performance increase. We show that eSGM produces the same high quality disparity images as SGM and demonstrate its performance both on an aerial image pair with 142 MPixel and within a real-time mobile robotic application. We have implemented the new method on the CPU, GPU and FPGA.We conclude that eSGM is advantageous for a GPU implementation and essential for an implementation on our FPGA.

Superconductive junctions for x-ray spectroscopy

International Nuclear Information System (INIS)

Grand, J.B. le; Bruijn, M.P.; Frericks, M.; Korte, P.A.J. de; Houwman, E.P.; Flokstra, J.

1992-01-01

Biasing of SIS-junctions for the purpose of high energy resolution x-ray detection is complicated by the presence of a DC Josephson current and AC Josephson current resonances, so that a large magnetic field is normally used for the suppression of these Josephson features. A transimpedance amplifier is proposed for biasing and signal amplification at low magnetic field. X-ray spectroscopy detectors for astronomy require a high detection efficiency in the 0.5-10 keV energy band and a reasonable (∼1 cm 2 ) detector area. Calculations on absorber-junctions combinations which might meet these requirements are presented. (author) 9 refs.; 10 figs

Numerical versus analytical Ic(H) patterns in Josephson junctions with periodically alternating critical current density

International Nuclear Information System (INIS)

Lazarides, N

2004-01-01

An analytical expression for the magnetic-field-dependent critical current I c (H) of Josephson junctions with periodically alternating critical current density J c (x) is derived within the uniform field approximation. Comparison with numerically calculated I c (H) patterns for junctions with identical, thick, periodically arranged defects with the corresponding analytical expression reveals fair agreement for a wide range of parameters, due to increased characteristic length. Based on qualitative arguments, we give the dependence of the new characteristic length on the geometrical parameters of the junction, which is in agreement with self-consistent calculations with the static sine-Gordon equation. The analytical expression captures the observed qualitative features of the I c (H) patterns, while it is practically exact for short junctions or high fields. It also produces the shift of the major peak from the zero-field position of the standard Fraunhofer pattern to another position related to the periodicity of the critical current density in φ-junctions

Nanometer-scale patterning of high-Tc superconductors for Josephson junction-based digital circuits

International Nuclear Information System (INIS)

Wendt, J.R.; Plut, T.A.; Corless, R.F.; Martens, J.S.; Berkowitz, S.; Char, K.; Johansson, M.; Hou, S.Y.; Phillips, J.M.

1994-01-01

A straightforward method for nanometer-scale patterning of high-T c superconductor thin films is discussed. The technique combines direct-write electron beam lithography with well-controlled aqueous etches and is applied to the fabrication of Josephson junction nanobridges in high-quality, epitaxial thin-film YBa 2 Cu 3 O 7 . We present the results of our studies of the dimensions, yield, uniformity, and mechanism of the junctions along with the performance of a representative digital circuit based on these junctions. Direct current junction parameter statistics measured at 77 K show critical currents of 27.5 μA±13% for a sample set of 220 junctions. The Josephson behavior of the nanobridge is believed to arise from the aggregation of oxygen vacancies in the nanometer-scale bridge

Thermoelectric-induced spin currents in single-molecule magnet tunnel junctions

Science.gov (United States)

Zhang, Zhengzhong; Jiang, Liang; Wang, Ruiqiang; Wang, Baigeng; Xing, D. Y.

2010-12-01

A molecular spin-current generator is proposed, which consists of a single-molecule magnet (SMM) coupled to two normal metal electrodes with temperature gradient. It is shown that this tunneling junction can generate a highly spin-polarized current by thermoelectric effects, whose flowing direction and spin polarization can be changed by adjusting the gate voltage applied to the SMM. This device can be realized with current technologies and may have practical use in spintronics and quantum information.

A highly efficient multi-core algorithm for clustering extremely large datasets

Directory of Open Access Journals (Sweden)

Kraus Johann M

2010-04-01

Full Text Available Abstract Background In recent years, the demand for computational power in computational biology has increased due to rapidly growing data sets from microarray and other high-throughput technologies. This demand is likely to increase. Standard algorithms for analyzing data, such as cluster algorithms, need to be parallelized for fast processing. Unfortunately, most approaches for parallelizing algorithms largely rely on network communication protocols connecting and requiring multiple computers. One answer to this problem is to utilize the intrinsic capabilities in current multi-core hardware to distribute the tasks among the different cores of one computer. Results We introduce a multi-core parallelization of the k-means and k-modes cluster algorithms based on the design principles of transactional memory for clustering gene expression microarray type data and categorial SNP data. Our new shared memory parallel algorithms show to be highly efficient. We demonstrate their computational power and show their utility in cluster stability and sensitivity analysis employing repeated runs with slightly changed parameters. Computation speed of our Java based algorithm was increased by a factor of 10 for large data sets while preserving computational accuracy compared to single-core implementations and a recently published network based parallelization. Conclusions Most desktop computers and even notebooks provide at least dual-core processors. Our multi-core algorithms show that using modern algorithmic concepts, parallelization makes it possible to perform even such laborious tasks as cluster sensitivity and cluster number estimation on the laboratory computer.

Two-dimensional macroscopic quantum tunneling in multi-gap superconductor Josephson junctions

International Nuclear Information System (INIS)

Asai, Hidehiro; Kawabata, Shiro; Ota, Yukihiro; Machida, Masahiko

2014-01-01

Low-temperature characters of superconducting devices yield definite probes for different superconducting phenomena. We study the macroscopic quantum tunneling (MQT) in a Josephson junction, composed of a single-gap superconductor and a two-gap superconductor. Since this junction has two kinds to the superconducting phase differences, calculating the MQT escape rate requires the analysis of quantum tunneling in a multi-dimensional configuration space. Our approach is the semi-classical approximation along a 1D curve in a 2D potential- energy landscape, connecting two adjacent potential (local) minimums through a saddle point. We find that this system has two plausible tunneling paths; an in-phase path and an out-of-phase path. The former is characterized by the Josephson-plasma frequency, whereas the latter is by the frequency of the characteristic collective mode in a two-band superconductor, Josephson- Leggett mode. Depending on external bias current and inter-band Josephson-coupling energy, one of them mainly contributes to the MQT. Our numerical calculations show that the difference between the in-phase path and the out-of-phase path is manifest, with respect to the bias- current-dependence of the MQT escape rate. This result suggests that our MQT setting be an indicator of the Josephson-Leggett mode

Junction Temperature Aware Energy Efficient Router Design on FPGA

DEFF Research Database (Denmark)

Thind, Vandana; Sharma, Shivani; Minwer, M H

2015-01-01

Energy, Power and efficiency are very much related to each other. To make any system efficient, Power consumed by it must be minimized or we can say that power dissipation should be less. In our research we tried to make a energy efficient router design on FPGA by varying junction temperature...

Critical current fluctuation in a microwave-driven Josephson junction

International Nuclear Information System (INIS)

Dong Ning; Sun Guozhu; Wang Yiwen; Cao Junyu; Yu Yang; Chen Jian; Kang Lin; Xu Weiwei; Han Siyuan; Wu Peiheng

2007-01-01

Josephson junction devices are good candidates for quantum computation. A large energy splitting was observed in the spectroscopy of a superconducting Josephson junction. The presence of the critical current fluctuation near the energy splitting indicated coupling between the junction and a two-level system. Furthermore, we find that this fluctuation is microwave dependent. It only appears at certain microwave frequency. This relation suggested that the decoherence of qubits is influenced by the necessary computing operations

Investigating the electronic properties of multi-junction ZnS/CdS/CdTe graded bandgap solar cells

Energy Technology Data Exchange (ETDEWEB)

Olusola, O.I., E-mail: olajideibk@yahoo.com [Electronic Materials and Sensors Group, Materials and Engineering Research Institute, Sheffield Hallam University, Sheffield S1 1WB (United Kingdom); Department of Physics, School of Science, The Federal University of Technology, Akure (FUTA), P.M.B. 704 (Nigeria); Madugu, M.L.; Dharmadasa, I.M. [Electronic Materials and Sensors Group, Materials and Engineering Research Institute, Sheffield Hallam University, Sheffield S1 1WB (United Kingdom)

2017-04-15

The fabrication of multi-junction graded bandgap solar cells have been successfully implemented by electroplating three binary compound semiconductors from II-VI family. The three semiconductor materials grown by electroplating techniques are ZnS, CdS and CdTe thin films. The electrical conductivity type and energy bandgap of each of the three semiconductors were determined using photoelectrochemical (PEC) cell measurement and UV–Vis spectrophotometry techniques respectively. The PEC cell results show that all the three semiconductor materials have n-type electrical conductivity. These two material characterisation techniques were considered in this paper in order to establish the relevant energy band diagram for device results, analysis and interpretation. Solar cells with the device structure glass/FTO/n-ZnS/n-CdS/n-CdTe/Au were then fabricated and characterised using current-voltage (I-V) and capacitance-voltage (C-V) techniques. From the I-V characteristics measurement, the fabricated device structures yielded an open circuit voltage (V{sub oc}) of 670 mV, short circuit current density (J{sub sc}) of 41.5 mA cm{sup −2} and fill-factor (FF) of 0.46 resulting in ∼12.8% efficiency when measured at room temperature under AM1.5 illumination conditions. The device structure showed an excellent rectification factor (RF) of 10{sup 4.3} and ideality factor (n) of 1.88. The results obtained from the C-V measurement also showed that the device structures have a moderate doping level of 5.2 × 10{sup 15} cm{sup −3}. - Highlights: • Electroplating of n-ZnS, n-CdS and n-CdTe binary compound semiconductors. • Fabrication of Schottky barrier solar cells from glass/FTO/n-ZnS/n-CdS/n-CdTe/Au. • Development of multi-junction graded bandgap solar cells using n-n-n structures.

ABMapper: a suffix array-based tool for multi-location searching and splice-junction mapping.

Science.gov (United States)

Lou, Shao-Ke; Ni, Bing; Lo, Leung-Yau; Tsui, Stephen Kwok-Wing; Chan, Ting-Fung; Leung, Kwong-Sak

2011-02-01

Sequencing reads generated by RNA-sequencing (RNA-seq) must first be mapped back to the genome through alignment before they can be further analyzed. Current fast and memory-saving short-read mappers could give us a quick view of the transcriptome. However, they are neither designed for reads that span across splice junctions nor for repetitive reads, which can be mapped to multiple locations in the genome (multi-reads). Here, we describe a new software package: ABMapper, which is specifically designed for exploring all putative locations of reads that are mapped to splice junctions or repetitive in nature. The software is freely available at: http://abmapper.sourceforge.net/. The software is written in C++ and PERL. It runs on all major platforms and operating systems including Windows, Mac OS X and LINUX.

Traveling wave parametric amplifier with Josephson junctions using minimal resonator phase matching

International Nuclear Information System (INIS)

White, T. C.; Mutus, J. Y.; Hoi, I.-C.; Barends, R.; Campbell, B.; Chen, Yu; Chen, Z.; Chiaro, B.; Dunsworth, A.; Jeffrey, E.; Kelly, J.; Neill, C.; O'Malley, P. J. J.; Roushan, P.; Sank, D.; Vainsencher, A.; Wenner, J.; Martinis, John M.; Megrant, A.; Chaudhuri, S.

2015-01-01

Josephson parametric amplifiers have become a critical tool in superconducting device physics due to their high gain and quantum-limited noise. Traveling wave parametric amplifiers (TWPAs) promise similar noise performance, while allowing for significant increases in both bandwidth and dynamic range. We present a TWPA device based on an LC-ladder transmission line of Josephson junctions and parallel plate capacitors using low-loss amorphous silicon dielectric. Crucially, we have inserted λ/4 resonators at regular intervals along the transmission line in order to maintain the phase matching condition between pump, signal, and idler and increase gain. We achieve an average gain of 12 dB across a 4 GHz span, along with an average saturation power of −92 dBm with noise approaching the quantum limit

Inter-band phase fluctuations in macroscopic quantum tunneling of multi-gap superconducting Josephson junctions

Energy Technology Data Exchange (ETDEWEB)

Asai, Hidehiro, E-mail: hd-asai@aist.go.jp [Electronics and Photonics Research Institute (ESPRIT), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568 (Japan); Ota, Yukihiro [CCSE, Japan Atomic Energy Agency, Kashiwa, Chiba 277-8587 (Japan); Kawabata, Shiro [Electronics and Photonics Research Institute (ESPRIT), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568 (Japan); Nori, Franco [CEMS, RIKEN, Wako-shi, Saitama 351-0198 (Japan); Physics Department, University of Michigan, Ann Arbor, MI 48109-1040 (United States)

2014-09-15

Highlights: • We study MQT in Josephson junctions composed of multi-gap superconductors. • We derive a formula of the MQT escape rate for multiple phase differences. • We investigate the effect of inter-band phase fluctuation on MQT. • The MQT escape rate is significantly enhanced by the inter-band phase fluctuation. - Abstract: We theoretically investigate macroscopic quantum tunneling (MQT) in a hetero Josephson junction formed by a conventional single-gap superconductor and a multi-gap superconductor. In such Josephson junctions, phase differences for each tunneling channel are defined, and the fluctuation of the relative phase differences appear which is referred to as Josephson–Leggett’s mode. We take into account the effect of the fluctuation in the tunneling process and calculate the MQT escape rate for various junction parameters. We show that the fluctuation of relative phase differences drastically enhances the escape rate.

Inter-band phase fluctuations in macroscopic quantum tunneling of multi-gap superconducting Josephson junctions

International Nuclear Information System (INIS)

Asai, Hidehiro; Ota, Yukihiro; Kawabata, Shiro; Nori, Franco

2014-01-01

Highlights: • We study MQT in Josephson junctions composed of multi-gap superconductors. • We derive a formula of the MQT escape rate for multiple phase differences. • We investigate the effect of inter-band phase fluctuation on MQT. • The MQT escape rate is significantly enhanced by the inter-band phase fluctuation. - Abstract: We theoretically investigate macroscopic quantum tunneling (MQT) in a hetero Josephson junction formed by a conventional single-gap superconductor and a multi-gap superconductor. In such Josephson junctions, phase differences for each tunneling channel are defined, and the fluctuation of the relative phase differences appear which is referred to as Josephson–Leggett’s mode. We take into account the effect of the fluctuation in the tunneling process and calculate the MQT escape rate for various junction parameters. We show that the fluctuation of relative phase differences drastically enhances the escape rate

Third harmonic current injection into highly saturated multi-phase machines

Directory of Open Access Journals (Sweden)

Klute Felix

2017-03-01

Full Text Available One advantage of multi-phase machines is the possibility to use the third harmonic of the rotor flux for additional torque generation. This effect can be maximised for Permanent Magnet Synchronous Machines (PMSM with a high third harmonic content in the magnet flux. This paper discusses the effects of third harmonic current injection (THCI on a five-phase PMSM with a conventional magnet shape depending on saturation. The effects of THCI in five-phase machines are shown in a 2D FEM model in Ansys Maxwell verified by measurement results. The results of the FEM model are analytically analysed using the Park model. It is shown in simulation and measurement that the torque improvement by THCI increases significantly with the saturation level, as the amplitude of the third harmonic flux linkage increases with the saturation level but the phase shift of the rotor flux linkage has to be considered. This paper gives a detailed analysis of saturation mechanisms of PMSM, which can be used for optimizing the efficiency in operating points of high saturations, without using special magnet shapes.

High quality factor HTS Josephson junctions on low loss substrates

Energy Technology Data Exchange (ETDEWEB)

Stornaiuolo, D; Longobardi, L; Massarotti, D; Barone, A; Tafuri, F [CNR-SPIN Napoli, Complesso Universitario di Monte Sant' Angelo, via Cinthia, 80126 Napoli (Italy); Papari, G; Carillo, F [NEST, CNR-NANO and Scuola Normale Superiore, Piazza San Silvestro 12, 56127 Pisa (Italy); Cennamo, N [Dipartimento Ingegneria dell' Informazione, Seconda Universita degli Studi di Napoli, via Roma 29, 81031 Aversa (Italy)

2011-04-15

We have extended the off-axis biepitaxial technique to produce YBCO grain boundary junctions on low loss substrates. Excellent transport properties have been reproducibly found, with remarkable values of the quality factor I{sub c}R{sub n} (with I{sub c} the critical current and R{sub n} the normal state resistance) above 10 mV, far higher than the values commonly reported in the literature for high temperature superconductor (HTS) based Josephson junctions. The outcomes are consistent with a picture of a more uniform grain boundary region along the current path. This work supports a possible implementation of grain boundary junctions for various applications including terahertz sensors and HTS quantum circuits in the presence of microwaves.

A graphene/single GaAs nanowire Schottky junction photovoltaic device.

Science.gov (United States)

Luo, Yanbin; Yan, Xin; Zhang, Jinnan; Li, Bang; Wu, Yao; Lu, Qichao; Jin, Chenxiaoshuai; Zhang, Xia; Ren, Xiaomin

2018-05-04

A graphene/nanowire Schottky junction is a promising structure for low-cost high-performance optoelectronic devices. Here we demonstrate a graphene/single GaAs nanowire Schottky junction photovoltaic device. The Schottky junction is fabricated by covering a single layer graphene onto an n-doped GaAs nanowire. Under 532 nm laser excitation, the device exhibits a high responsivity of 231 mA W-1 and a short response/recover time of 85/118 μs at zero bias. Under AM 1.5 G solar illumination, the device has an open-circuit voltage of 75.0 mV and a short-circuit current density of 425 mA cm-2, yielding a remarkable conversion efficiency of 8.8%. The excellent photovoltaic performance of the device is attributed to the strong built-in electric field in the Schottky junction as well as the transparent property of graphene. The device is promising for self-powered high-speed photodetectors and low-cost high-efficiency solar cells.

Capacitance measurement of Josephson tunnel junctions with microwave-induced dc quasiparticle tunneling currents

International Nuclear Information System (INIS)

Hamasaki, K.; Yoshida, K.; Irie, F.; Enpuku, K.

1982-01-01

The microwave response of the dc quasiparticle tunneling current in Josephson tunnel junctions, where the Josephson current is suppressed by an external magnetic field, has been studied quantitatively in order to clarify its characteristics as a probe for the measurement of the junction capacitance. Extensive experiments for both small and long junctions are carried out for distinguishing between microwave behaviors of lumped and distributed constant junctions. It is shown that the observed voltage dependence of the dc quasiparticle tunneling current modified by an applied rf field is in good agreement with a theoretical result which takes into account the influence of the microwave circuit connected to the junction. The comparison between theory and experiment gives the magnitude of the internal rf field in the junction. Together with the applied rf field, this internal rf field leads to the junction rf impedance which is dominated by the junction capacitance in our experimental condition. In the case of lumped junctions, this experimental rf impedance is in reasonable agreement with the theoretical one with the junction capacitance estimated from the Fiske step of the distributed junction fabricated on the same substrate; the obtained ratio of the experimental impedance to the theoretical one is approximately 0.6--1.7. In the case of distributed junctions, however, experimental values of their characteristic impedances are approximately 0.2--0.3 of theoretical values calculated by assuming the one-dimensional junction model and taking account of the standing-wave effect in the junction

Efficient p-n junction-based thermoelectric generator that can operate at extreme temperature conditions

Science.gov (United States)

Chavez, Ruben; Angst, Sebastian; Hall, Joseph; Maculewicz, Franziska; Stoetzel, Julia; Wiggers, Hartmut; Thanh Hung, Le; Van Nong, Ngo; Pryds, Nini; Span, Gerhard; Wolf, Dietrich E.; Schmechel, Roland; Schierning, Gabi

2018-01-01

In many industrial processes, a large proportion of energy is lost in the form of heat. Thermoelectric generators can convert this waste heat into electricity by means of the Seebeck effect. However, the use of thermoelectric generators in practical applications on an industrial scale is limited in part because electrical, thermal, and mechanical bonding contacts between the semiconductor materials and the metal electrodes in current designs are not capable of withstanding thermal-mechanical stress and alloying of the metal-semiconductor interface when exposed to the high temperatures occurring in many real-world applications. Here we demonstrate a concept for thermoelectric generators that can address this issue by replacing the metallization and electrode bonding on the hot side of the device by a p-n junction between the two semiconductor materials, making the device robust against temperature induced failure. In our proof-of-principle demonstration, a p-n junction device made from nanocrystalline silicon is at least comparable in its efficiency and power output to conventional devices of the same material and fabrication process, but with the advantage of sustaining high hot side temperatures and oxidative atmosphere.

Four-junction AlGaAs/GaAs laser power converter

Science.gov (United States)

Huang, Jie; Sun, Yurun; Zhao, Yongming; Yu, Shuzhen; Dong, Jianrong; Xue, Jiping; Xue, Chi; Wang, Jin; Lu, Yunqing; Ding, Yanwen

2018-04-01

Four-junction AlGaAs/GaAs laser power converters (LPCs) with n+-GaAs/p+-Al0.37Ga0.63As heterostructure tunnel junctions (TJs) have been designed and grown by metal-organic chemical vapor deposition (MOCVD) for converting the power of 808 nm lasers. A maximum conversion efficiency η c of 56.9% ± 4% is obtained for cells with an aperture of 3.14 mm2 at an input laser power of 0.2 W, while dropping to 43.3% at 1.5 W. Measured current–voltage (I–V) characteristics indicate that the performance of the LPC can be further improved by increasing the tunneling current density of TJs and optimizing the thicknesses of sub-cells to achieve current matching in LPC. Project financially supported by the National Natural Science Foundation of China (No. 61376065) and Zhongtian Technology Group Co. Ltd.

Majorana splitting from critical currents in Josephson junctions

Science.gov (United States)

Cayao, Jorge; San-Jose, Pablo; Black-Schaffer, Annica M.; Aguado, Ramón; Prada, Elsa

2017-11-01

A semiconducting nanowire with strong Rashba spin-orbit coupling and coupled to a superconductor can be tuned by an external Zeeman field into a topological phase with Majorana zero modes. Here we theoretically investigate how this exotic topological superconductor phase manifests in Josephson junctions based on such proximitized nanowires. In particular, we focus on critical currents in the short junction limit (LN≪ξ , where LN is the junction length and ξ is the superconducting coherence length) and show that they contain important information about nontrivial topology and Majoranas. This includes signatures of the gap inversion at the topological transition and a unique oscillatory pattern that originates from Majorana interference. Interestingly, this pattern can be modified by tuning the transmission across the junction, thus providing complementary evidence of Majoranas and their energy splittings beyond standard tunnel spectroscopy experiments, while offering further tunability by virtue of the Josephson effect.

Transition I efficiency and victory in volleyball matches

Directory of Open Access Journals (Sweden)

Herbert Ugrinowitsch

2014-03-01

Full Text Available The present study investigated the correlation between Transition Iwith victory in volleyball matches. The 2002 South-American Youth Men's Championship was recorded and the Transition I was analyzed and classified as negative, null or positive. Results of the efficiency in Transition I was calculated using t test for independent samples and compared to the efficiency between teams during each set and matches. Spearman correlation assessed the relationship between efficiency in each set and results of the matches with the final ranking in the championship. The results showed that the winning teams exhibited higher efficiency in Transition I, as well as a positive relationship of higher efficiency in Transition I with all of their results. The higher efficiency in Transition I is related to victory in volleyball matches.

Harmonic and reactive behavior of the quasiparticle tunnel current in SIS junctions

Energy Technology Data Exchange (ETDEWEB)

Rashid, H., E-mail: hawal@chalmers.se; Desmaris, V.; Pavolotsky, A.; Belitsky, V. [Group for Advanced Receiver Development, Earth and Space Sciences Department, Chalmers University of Technology, Gothenburg, 412 96 (Sweden)

2016-04-15

In this paper, we show theoretically and experimentally that the reactive quasiparticle tunnel current of the superconductor tunnel junction could be directly measured at specific bias voltages for the higher harmonics of the quasiparticle tunnel current. We used the theory of quasiparticle tunneling to study the higher harmonics of the quasiparticle tunnel current in superconducting tunnel junction in the presence of rf irradiation. The impact of the reactive current on the harmonic behavior of the quasiparticle tunnel current was carefully studied by implementing a practical model with four parameters to model the dc I-V characteristics of the superconducting tunnel junction. The measured reactive current at the specific bias voltage is in good agreement with our theoretically calculated reactive current through the Kramers-Kronig transform. This study also shows that there is an excellent correspondence between the behavior of the predicted higher harmonics using the previously established theory of quasiparticle tunnel current in superconducting tunnel junctions by J.R. Tucker and M.J. Feldman and the measurements presented in this paper.

Harmonic and reactive behavior of the quasiparticle tunnel current in SIS junctions

International Nuclear Information System (INIS)

Rashid, H.; Desmaris, V.; Pavolotsky, A.; Belitsky, V.

2016-01-01

In this paper, we show theoretically and experimentally that the reactive quasiparticle tunnel current of the superconductor tunnel junction could be directly measured at specific bias voltages for the higher harmonics of the quasiparticle tunnel current. We used the theory of quasiparticle tunneling to study the higher harmonics of the quasiparticle tunnel current in superconducting tunnel junction in the presence of rf irradiation. The impact of the reactive current on the harmonic behavior of the quasiparticle tunnel current was carefully studied by implementing a practical model with four parameters to model the dc I-V characteristics of the superconducting tunnel junction. The measured reactive current at the specific bias voltage is in good agreement with our theoretically calculated reactive current through the Kramers-Kronig transform. This study also shows that there is an excellent correspondence between the behavior of the predicted higher harmonics using the previously established theory of quasiparticle tunnel current in superconducting tunnel junctions by J.R. Tucker and M.J. Feldman and the measurements presented in this paper.

Investigation of room-temperature wafer bonded GaInP/GaAs/InGaAsP triple-junction solar cells

Energy Technology Data Exchange (ETDEWEB)

Yang, Wen-xian; Dai, Pan; Ji, Lian; Tan, Ming; Wu, Yuan-yuan [Key Lab of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou 215123 (China); Uchida, Shiro [Department of Mechanical Science and Engineering Faculty of Engineering, Chiba Institute of Technology, 2-17-1, Tsudanuma, Narashino, Chiba 275-0016 (Japan); Lu, Shu-long, E-mail: sllu2008@sinano.ac.cn [Key Lab of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou 215123 (China); Yang, Hui [Key Lab of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou 215123 (China)

2016-12-15

Highlights: • High quality InGaAsP material with a bandgap of 1.0 eV was grown by MBE. • Room-temperature wafer-bonded GaInP/GaAs/InGaAsP SCs were fabricated. • An efficiency of 30.3% of wafer-bonded triple-junction SCs was obtained. - Abstract: We report on the fabrication of III–V compound semiconductor multi-junction solar cells using the room-temperature wafer bonding technique. GaInP/GaAs dual-junction solar cells on GaAs substrate and InGaAsP single junction solar cell on InP substrate were separately grown by all-solid state molecular beam epitaxy (MBE). The two cells were then bonded to a triple-junction solar cell at room-temperature. A conversion efficiency of 30.3% of GaInP/GaAs/InGaAsP wafer-bonded solar cell was obtained at 1-sun condition under the AM1.5G solar simulator. The result suggests that the room-temperature wafer bonding technique and MBE technique have a great potential to improve the performance of multi-junction solar cell.

Critical current of pure SNS junctions

International Nuclear Information System (INIS)

Golub, A.A.; Bezzub, O.P.

1982-01-01

Boundary conditions at the superconductor-normal metal interface are determined, taking into account the differences in the effective masses and the density of states of the metals constituting the transition and assumed to be pure. The potential barrier of the interface is chosen to be zero. The critical current of the junction is calculated [ru

Influence of the current-phase relation on the critical-current-applied-magnetic-flux dependence in parallel-connected Josephson junctions

International Nuclear Information System (INIS)

Tsang, W.; Van Duzer, T.

1976-01-01

The form of the current-phase relations for the Josephson junctions is shown to have a significant influence on the relation I/sub c/(theta/sub a/) between critical current and applied flux for two junctions connected in parallel in a superconducting circuit. The observed one-flux-quantum periodicity and inversion symmetry of the I/sub c/(theta/sub a/) relation are shown to result from the fact that the current-phase, i-phi, relations of the junctions satisfy i (phi+2mπ) =i (phi) and i (-phi) =-i (phi), respectively. It is also shown that if the current-phase relations for the two junctions are different, an asymmetry appears in the I/sub c/(theta/sub a/)

Pure spin polarized current through a full magnetic silicene junction

Science.gov (United States)

Lorestaniweiss, Zeinab; Rashidian, Zeinab

2018-06-01

Using the Landauer-Buttiker formula, we investigate electronic transport in silicene junction composed of ferromagnetic silicene. The direction of magnetization in the middle region may change in a plane perpendicular to the junction, whereas the magnetization direction keep fixed upward in silicene electrodes. We investigate how the various magnetization directions in the middle region affect the electronic transport. We demonstrate that conductance depends on the orientation of magnetizations in the middle region. It is found that by changing the direction of the magnetization in the middle region, a pure spin up current can be achieved. This achievement makes this full magnetic junction a good design for a full spin-up current polarizer.

Exploiting Best-Match Equations for Efficient Reinforcement Learning

NARCIS (Netherlands)

van Seijen, Harm; Whiteson, Shimon; van Hasselt, Hado; Wiering, Marco

This article presents and evaluates best-match learning, a new approach to reinforcement learning that trades off the sample efficiency of model-based methods with the space efficiency of model-free methods. Best-match learning works by approximating the solution to a set of best-match equations,

High Current Planar Transformer for Very High Efficiency Isolated Boost DC-DC Converters

DEFF Research Database (Denmark)

Pittini, Riccardo; Zhang, Zhe; Andersen, Michael A. E.

2014-01-01

This paper presents a design and optimization of a high current planar transformer for very high efficiency dc-dc isolated boost converters. The analysis considers different winding arrangements, including very high copper thickness windings. The analysis is focused on the winding ac-resistance a......This paper presents a design and optimization of a high current planar transformer for very high efficiency dc-dc isolated boost converters. The analysis considers different winding arrangements, including very high copper thickness windings. The analysis is focused on the winding ac......-resistance and transformer leakage inductance. Design and optimization procedures are validated based on an experimental prototype of a 6 kW dcdc isolated full bridge boost converter developed on fully planar magnetics. The prototype is rated at 30-80 V 0-80 A on the low voltage side and 700-800 V on the high voltage side...... with a peak efficiency of 97.8% at 80 V 3.5 kW. Results highlights that thick copper windings can provide good performance at low switching frequencies due to the high transformer filling factor. PCB windings can also provide very high efficiency if stacked in parallel utilizing the transformer winding window...

Response of thick-film bridge junction of high-Tc YBCO to nuclear radiation

International Nuclear Information System (INIS)

Ding Honglin; Wang Jun; Zhang Wanchang

1992-01-01

The response of thick-film Josephson junction based on high-T c YBCO to nuclear radiation is described. The lengths of the junction are 2000 μm, 1000 μm, and 500 μm and the widths are 500 μm, 300 μm and 100 μm. When the junction is irradiated by low energy γ-ray of 59.5 KeV from 241 Am at temperature of 77 K and the transport current I b is more than I c , the authors obtained the reduction of 1.6 mA of critical current and volt-signal as high as 17 μV without amplifier. It has been noted that the signal amplitude is related to the distance between the junction and the radiation source. Finally the advantages and shortcomings of detector based on thick films of high T c YBCO are discussed in the paper

Holographic spectrum-splitting optical systems for solar photovoltaics

Science.gov (United States)

Zhang, Deming

Solar energy is the most abundant source of renewable energy available. The relatively high cost prevents solar photovoltaic (PV) from replacing fossil fuel on a larger scale. In solar PV power generation the cost is reduced with more efficient PV technologies. In this dissertation, methods to improve PV conversion efficiency with holographic optical components are discussed. The tandem multiple-junction approach has achieved very high conversion efficiency. However it is impossible to manufacture tandem PV cells at a low cost due to stringent fabrication standards and limited material types that satisfy lattice compatibility. Current produced by the tandem multi-junction PV cell is limited by the lowest junction due to series connection. Spectrum-splitting is a lateral multi-junction concept that is free of lattice and current matching constraints. Each PV cell can be optimized towards full absorption of a spectral band with tailored light-trapping schemes. Holographic optical components are designed to achieve spectrum-splitting PV energy conversion. The incident solar spectrum is separated onto multiple PV cells that are matched to the corresponding spectral band. Holographic spectrum-splitting can take advantage of existing and future low-cost technologies that produces high efficiency thin-film solar cells. Spectrum-splitting optical systems are designed and analyzed with both transmission and reflection holographic optical components. Prototype holograms are fabricated and high optical efficiency is achieved. Light-trapping in PV cells increases the effective optical path-length in the semiconductor material leading to improved absorption and conversion efficiency. It has been shown that the effective optical path length can be increased by a factor of 4n2 using diffusive surfaces. Ultra-light-trapping can be achieved with optical filters that limit the escape angle of the diffused light. Holographic reflection gratings have been shown to act as angle

Similarities between normal- and super-currents in topological insulator magnetic tunnel junctions

International Nuclear Information System (INIS)

Soodchomshom, Bumned; Chantngarm, Peerasak

2010-01-01

This work compares the normal-current in a NM/Fi/NM junction with the super-current in a SC/Fi/SC junction, where both are topological insulator systems. NM and Fi are normal region and ferromagnetic region of thickness d with exchange energy m playing a role of the mass of the Dirac electrons and with the gate voltage V G , respectively. SC is superconducting region induced by a s-wave superconductor. We show that, interestingly, the critical super-current passing through a SC/Fi/SC junction behaves quite similar to the normal-current passing through a NM/Fi/NM junction. The normal-current and super-current exhibit N-peak oscillation, found when currents are plotted as a function of the magnetic barrier strength χ ∼ md/hv F . With the barrier strength Z ∼ V G d/hv F , the number of peaks N is determined through the relation Z ∼ Nπ + σπ (with 0 < σ≤1 for χ < Z). The normal- and the super-currents also exhibit oscillating with the same height for all of peaks, corresponding to the Dirac fermion tunneling behavior. These anomalous oscillating currents due to the interplay between gate voltage and magnetic field in the barrier were not found in graphene-based NM/Fi/NM and SC/Fi/SC junctions. This is due to the different magnetic effect between the Dirac fermions in topological insulator and graphene.

All high T sub c edge junctions and SQUIDs

Energy Technology Data Exchange (ETDEWEB)

Laibowitz, R.B.; Koch, R.H.; Gupta, A.; Koren, G.; Gallagher, W.J.; Foglietti, V.; Oh, B.; Viggiano, J.M. (IBM Research Division, P.O. Box 218, Yorktown Heights, New York 10598 (US))

1990-02-12

We present the first observations of superconducting quantum interference in multilevel, all high {ital T}{sub {ital c}}, lithographically patterned edge junction structures. The current-voltage characteristics are nonhysteretic and have well-defined critical currents. The dynamic resistance is independent of current above the critical current. These devices show periodic sensitivity to magnetic fields and low levels of magnetic hysteresis up to temperatures around 60 K.

A Multi-Scale Settlement Matching Algorithm Based on ARG

Science.gov (United States)

Yue, Han; Zhu, Xinyan; Chen, Di; Liu, Lingjia

2016-06-01

Homonymous entity matching is an important part of multi-source spatial data integration, automatic updating and change detection. Considering the low accuracy of existing matching methods in dealing with matching multi-scale settlement data, an algorithm based on Attributed Relational Graph (ARG) is proposed. The algorithm firstly divides two settlement scenes at different scales into blocks by small-scale road network and constructs local ARGs in each block. Then, ascertains candidate sets by merging procedures and obtains the optimal matching pairs by comparing the similarity of ARGs iteratively. Finally, the corresponding relations between settlements at large and small scales are identified. At the end of this article, a demonstration is presented and the results indicate that the proposed algorithm is capable of handling sophisticated cases.

Recombination mechanisms in highly efficient thin film Zn(S,O)/Cu(In,Ga)S2 based solar cells

Science.gov (United States)

Merdes, S.; Sáez-Araoz, R.; Ennaoui, A.; Klaer, J.; Lux-Steiner, M. Ch.; Klenk, R.

2009-11-01

Progress in fabricating Cu(In,Ga)S2 based solar cells with Zn(S,O) buffer is presented. An efficiency of 12.9% was achieved. Using spectral response, current-voltage and temperature dependent current-voltage measurements, current transport in this junction was studied and compared to that of a highly efficient CdS/Cu(In,Ga)S2 solar cell with a special focus on recombination mechanisms. Independently of the buffer type and despite the difference in band alignment of the two junctions, interface recombination is found to be the main recombination channel in both cases. This was unexpected since it is generally assumed that a cliff facilitates interface recombination while a spike suppresses it.

Effect of quasi-particle injection on retrapping current of Josephson junction

OpenAIRE

Utsunomiya, K.; Yagi, Ryuta

2006-01-01

We report that the energy dissipation of Josephson junction can be controlled by quasi-particle injection. We fabricated two Josephson junctions on the narrow aluminum wire and controlled the energy dissipation of one junction by quasi-particle injection from the other. We observed the retrapping current increased as the quasi-particles were injected. We also studied the heating effect of our measurement.

Development of III-Sb Quantum Dot Systems for High Efficiency Intermediate Band Solar Cells

Energy Technology Data Exchange (ETDEWEB)

Huffaker, Diana [Univ. of California, Los Angeles, CA (United States); Hubbard, Seth [Rochester Inst. of Technology, NY (United States); Norman, Andrew [National Renewable Energy Lab. (NREL), Golden, CO (United States)

2015-07-31

This project aimed to develop solar cells that can help reduce cost per watt. This work focused on developing solar cells that utilize quantum dot (QD) nanomaterials to provide multijunction solar cell efficiency at the cost of single junction solar cell. We focused on a novel concept known as intermediate band solar cells (IBSC) where an additional energy band is inserted in a single solar cell to accommodate sub-bandgap photons absorption which otherwise are lost through transmission. The additional energy band can be achieved by growing QDs within a solar cell p-n junction. Though numerous studies have been conducted to develop such QD systems, very small improvements in solar energy conversion efficiency have been reported. This is mainly due to non-optimal material parameters such as band gap, band offset etc. In this work, we identified and developed a novel QD material system that meets the requirements of IBSC more closely than the current state-of-the-art technology. To achieve these goals, we focused on three important areas of solar cell design: band structure calculations of new materials, efficient device design for high efficiency, and development of new semiconductor materials. In this project, we focused on III-Sb materials as they possess a wide range of energy bandgaps from 0.2 eV to 2eV. Despite the difficulty involved in realizing these materials, we were successfully developed these materials through a systematic approach. Materials studied in this work are AlAsSb (Aluminum Arsenide Antimonide), InAlAs (Indium Aluminum Arsenide) and InAs (Indium Arsenide). InAs was used to develop QD layers within AlAsSb and InAlAs p-n junctions. As the QDs have very small volume, up to 30 QD layers been inserted into the p-n junction to enhance light absorption. These QD multi-stack devices helped in understanding the challenges associated with the development of quantum dot solar cells. The results from this work show that the quantum dot solar cells indeed

Device characterization for design optimization of 4 junction inverted metamorphic concentrator solar cells

Energy Technology Data Exchange (ETDEWEB)

Geisz, John F.; France, Ryan M.; Steiner, Myles A.; Friedman, Daniel J. [National Renewable Energy Laboratory, Golden, CO 80401 (United States); García, Iván [National Renewable Energy Laboratory, Golden, CO 80401 USA and Instituto de Energía Solar, Universidad Politécnica de Madrid, Avda Complutense s/n, 28040 Madrid (Spain)

2014-09-26

Quantitative electroluminescence (EL) and luminescent coupling (LC) analysis, along with more conventional characterization techniques, are combined to completely characterize the subcell JV curves within a fourjunction (4J) inverted metamorphic solar cell (IMM). The 4J performance under arbitrary spectral conditions can be predicted from these subcell JV curves. The internal radiative efficiency (IRE) of each junction has been determined as a function of current density from the external radiative efficiency using optical modeling, but this required the accurate determination of the individual junction current densities during the EL measurement as affected by LC. These measurement and analysis techniques can be applied to any multijunction solar cell. The 4J IMM solar cell used to illustrate these techniques showed excellent junction quality as exhibited by high IRE and a one-sun AM1.5D efficiency of 36.3%. This device operates up to 1000 suns without limitations due to any of the three tunnel junctions.

Room-temperature current blockade in atomically defined single-cluster junctions

Science.gov (United States)

Lovat, Giacomo; Choi, Bonnie; Paley, Daniel W.; Steigerwald, Michael L.; Venkataraman, Latha; Roy, Xavier

2017-11-01

Fabricating nanoscopic devices capable of manipulating and processing single units of charge is an essential step towards creating functional devices where quantum effects dominate transport characteristics. The archetypal single-electron transistor comprises a small conducting or semiconducting island separated from two metallic reservoirs by insulating barriers. By enabling the transfer of a well-defined number of charge carriers between the island and the reservoirs, such a device may enable discrete single-electron operations. Here, we describe a single-molecule junction comprising a redox-active, atomically precise cobalt chalcogenide cluster wired between two nanoscopic electrodes. We observe current blockade at room temperature in thousands of single-cluster junctions. Below a threshold voltage, charge transfer across the junction is suppressed. The device is turned on when the temporary occupation of the core states by a transiting carrier is energetically enabled, resulting in a sequential tunnelling process and an increase in current by a factor of ∼600. We perform in situ and ex situ cyclic voltammetry as well as density functional theory calculations to unveil a two-step process mediated by an orbital localized on the core of the cluster in which charge carriers reside before tunnelling to the collector reservoir. As the bias window of the junction is opened wide enough to include one of the cluster frontier orbitals, the current blockade is lifted and charge carriers can tunnel sequentially across the junction.

High-efficiency, deep-junction, epitaxial InP solar cells on (100) and (111)B InP substrates

Science.gov (United States)

Venkatasubramanian, R.; Timmons, M. L.; Hutchby, J. A.; Walters, Robert J.; Summers, Geoffrey P.

1994-01-01

We report on the development and performance of deep-junction (approximately 0.25 micron), graded-emitter-doped, n(sup +)-p InP solar cells grown by metallorganic chemical vapor deposition (MOCVD). A novel, diffusion-transport process for obtaining lightly-doped p-type base regions of the solar cell is described. The I-V data and external quantum-efficiency response of these cells are presented. The best active-area AMO efficiency for these deep-junction cells on (100)-oriented InP substrates is 16.8 percent, with a J(sub SC) of 31.8 mA/sq cm, a V(sub OC) of 0.843 V, and a fill-factor of 0.85. By comparison, the best cell efficiency on the (111)B-oriented InP substrates was 15.0 percent. These efficiency values for deep-junction cells are encouraging and compare favorably with performance of thin-emitter (0.03 micron) epitaxial cells as well as that of deep-emitter diffused cells. The cell performance and breakdown voltage characteristics of a batch of 20 cells on each of the orientations are presented, indicating the superior breakdown voltage properties and other characteristics of InP cells on the (111)B orientation. Spectral response, dark I-V data, and photoluminescence (PL) measurements on the InP cells are presented with an analysis on the variation in J(sub SC) and V(sub OC) of the cells. It is observed, under open-circuit conditions, that lower-V(sub OC) cells exhibit higher band-edge PL intensity for both the (100) and (111)B orientations. This anomalous behavior suggests that radiative recombination in the heavily-doped n(sup +)-InP emitter may be detrimental to achieving higher V(sub OC) in n(sup +)-p InP solar cells.

A Multi-Scale Settlement Matching Algorithm Based on ARG

Directory of Open Access Journals (Sweden)

H. Yue

2016-06-01

Full Text Available Homonymous entity matching is an important part of multi-source spatial data integration, automatic updating and change detection. Considering the low accuracy of existing matching methods in dealing with matching multi-scale settlement data, an algorithm based on Attributed Relational Graph (ARG is proposed. The algorithm firstly divides two settlement scenes at different scales into blocks by small-scale road network and constructs local ARGs in each block. Then, ascertains candidate sets by merging procedures and obtains the optimal matching pairs by comparing the similarity of ARGs iteratively. Finally, the corresponding relations between settlements at large and small scales are identified. At the end of this article, a demonstration is presented and the results indicate that the proposed algorithm is capable of handling sophisticated cases.

Current-voltage characteristic of a Josephson junction with randomly distributed Abrikosov vortices

International Nuclear Information System (INIS)

Fistul, M.V.; Giuliani, G.F.

1997-01-01

We have developed a theory of the current-voltage characteristic of a Josephson junction in the presence of randomly distributed, pinned misaligned Abrikosov vortices oriented perpendicularly to the junction plane. Under these conditions the Josephson phase difference var-phi acquires an interesting stochastic dependence on the position in the plane of the junction. In this situation it is possible to define an average critical current which is determined by the spatial correlations of this function. Due to the inhomogeneity, we find that for finite voltage bias the electromagnetic waves propagating in the junction display a broad spectrum of wavelengths. This is at variance with the situation encountered in homogeneous junctions. The amplitude of these modes is found to decrease as the bias is increased. We predict that the presence of these excitations is directly related to a remarkable feature in the current-voltage characteristic. The dependence of the position and the magnitude of this feature on the vortex concentration has been determined. copyright 1997 The American Physical Society

Modeling of 4H—SiC multi-floating-junction Schottky barrier diode

International Nuclear Information System (INIS)

Hong-Bin, Pu; Lin, Cao; Zhi-Ming, Chen; Jie, Ren; Ya-Gong, Nan

2010-01-01

This paper develops a new and easy to implement analytical model for the specific on-resistance and electric field distribution along the critical path for 4H—SiC multi-floating junction Schottky barrier diode. Considering the charge compensation effects by the multilayer of buried opposite doped regions, it improves the breakdown voltage a lot in comparison with conventional one with the same on-resistance. The forward resistance of the floating junction Schottky barrier diode consists of several components and the electric field can be understood with superposition concept, both are consistent with MEDICI simulation results. Moreover, device parameters are optimized and the analyses show that in comparison with one layer floating junction, multilayer of floating junction layer is an effective way to increase the device performance when specific resistance and the breakdown voltage are traded off. The results show that the specific resistance increases 3.2 mΩ·cm 2 and breakdown voltage increases 422 V with an additional floating junction for the given structure. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

MultiFarm: A Benchmark for Multilingual Ontology Matching

NARCIS (Netherlands)

Meilicke, C.; García-Castro, R.; Freitas, F.; van Hage, W.R.; Montiel-Ponsoda, E.; Ribeiro de Azevedo, R.; Stuckenschmidt, H.; Svab-Zamazal, O.; Svatek, V.; Tamalin, A.; Wang, S.

2012-01-01

In this paper we present the MultiFarm dataset, which has been designed as a benchmark for multilingual ontology matching. The MultiFarm dataset is composed of a set of ontologies translated in different languages and the corresponding alignments between these ontologies. It is based on the OntoFarm

Forward voltage short-pulse technique for measuring high power laser array junction temperature

Science.gov (United States)

Meadows, Byron L. (Inventor); Amzajerdian, Frazin (Inventor); Barnes, Bruce W. (Inventor); Baker, Nathaniel R. (Inventor)

2012-01-01

The present invention relates to a method of measuring the temperature of the P-N junction within the light-emitting region of a quasi-continuous-wave or pulsed semiconductor laser diode device. A series of relatively short and low current monitor pulses are applied to the laser diode in the period between the main drive current pulses necessary to cause the semiconductor to lase. At the sufficiently low current level of the monitor pulses, the laser diode device does not lase and behaves similar to an electronic diode. The voltage across the laser diode resulting from each of these low current monitor pulses is measured with a high degree of precision. The junction temperature is then determined from the measured junction voltage using their known linear relationship.

Thermally activated phase slippage in high-Tc grain-boundary Josephson junctions

International Nuclear Information System (INIS)

Gross, R.; Chaudhari, P.; Dimos, D.; Gupta, A.; Koren, G.

1990-01-01

The effect of thermally activated phase slippage (TAPS) in YBa 2 Cu 3 O 7 grain-boundary Josephson junctions has been studied. TAPS has been found to be responsible for the dc noise voltage superimposed on the dc Josephson current near the transition temperature. Because of the reduced Josephson coupling energy of the grain-boundary junctions, which is caused by a reduced superconducting order parameter at the grain-boundary interface, TAPS is present over a considerable temperature range. The implications of TAPS on the applicability of high-T c Josephson junctions are outlined

Theoretical optimization of GaInP/GaAs dual-junction solar cell: Toward a 36% efficiency at 1000 suns

Energy Technology Data Exchange (ETDEWEB)

Baudrit, Mathieu; Algora, Carlos [Instituto de Energia Solar, Universidad Politecnica de Madrid (Spain)

2010-02-15

A theoretical conversion efficiency of 36.4% at 1000 suns concentration has been determined by means of realistic models and an improved optimization routine. The starting point device was the recent world-record monolithic GaInP/GaAs dual-junction solar cell that was grown lattice matched on a GaAs substrate by MOVPE, which has an efficiency of 32.6% at 1000 suns. Using previously calibrated models developed at our institution, IES-UPM, together with Silvaco ATLAS TCAD software, we reproduced the characteristics of the world-record solar cell, and then determined a cell configuration that would yield greater efficiency by using an optimization routine to hone the doping concentration and the thickness of each layer. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

Gas-liquid flow splitting in T-junction with inclined lateral arm

Science.gov (United States)

Yang, Le-le; Liu, Shuo; Li, Hua; Zhang, Jian; Wu, Ying-xiang; Xu, Jing-yu

2018-02-01

This paper studies the gas-liquid flow splitting in T-junction with inclined lateral arm. The separation mechanism of the T-junction is related to the pressure distribution in the T-junction. It is shown that the separation efficiency strongly depends on the inclination angle, when the angle ranges from 0° to 30°, while not so strongly for angles in the range from 30° to 90° Increasing the number of connecting tubes is helpful for the gas-liquid separation, and under the present test conditions, with four connecting tubes, a good separation performance can be achieved. Accordingly, a multi-tube Y-junction separator with four connecting tubes is designed for the experimental investigation. A good agreement between the simulated and measured data shows that there is an optimal split ratio to achieve the best performance for the multi-tube Y-junction separator.

Macroscopic quantum effects in the zero voltage state of the current biased Josephson junction

International Nuclear Information System (INIS)

Clarke, J.; Devoret, M.H.; Martinis, J.; Esteve, D.

1985-05-01

When a weak microwave current is applied to a current-biased Josephson tunnel junction in the thermal limit the escape rate from the zero voltage state is enhanced when the microwave frequency is near the plasma frequency of the junction. The resonance curve is markedly asymmetric because of the anharmonic properties of the potential well: this behavior is well explained by a computer simulation using a resistively shunted junction model. This phenomenon of resonant activation enables one to make in situ measurements of the capacitance and resistance shunting the junction, including contributions from the complex impedance presented by the current leads. For the relatively large area junctions studied in these experiments, the external capacitive loading was relatively unimportant, but the damping was entirely dominated by the external resistance

Multi-petascale highly efficient parallel supercomputer

Science.gov (United States)

Asaad, Sameh; Bellofatto, Ralph E.; Blocksome, Michael A.; Blumrich, Matthias A.; Boyle, Peter; Brunheroto, Jose R.; Chen, Dong; Cher, Chen -Yong; Chiu, George L.; Christ, Norman; Coteus, Paul W.; Davis, Kristan D.; Dozsa, Gabor J.; Eichenberger, Alexandre E.; Eisley, Noel A.; Ellavsky, Matthew R.; Evans, Kahn C.; Fleischer, Bruce M.; Fox, Thomas W.; Gara, Alan; Giampapa, Mark E.; Gooding, Thomas M.; Gschwind, Michael K.; Gunnels, John A.; Hall, Shawn A.; Haring, Rudolf A.; Heidelberger, Philip; Inglett, Todd A.; Knudson, Brant L.; Kopcsay, Gerard V.; Kumar, Sameer; Mamidala, Amith R.; Marcella, James A.; Megerian, Mark G.; Miller, Douglas R.; Miller, Samuel J.; Muff, Adam J.; Mundy, Michael B.; O'Brien, John K.; O'Brien, Kathryn M.; Ohmacht, Martin; Parker, Jeffrey J.; Poole, Ruth J.; Ratterman, Joseph D.; Salapura, Valentina; Satterfield, David L.; Senger, Robert M.; Smith, Brian; Steinmacher-Burow, Burkhard; Stockdell, William M.; Stunkel, Craig B.; Sugavanam, Krishnan; Sugawara, Yutaka; Takken, Todd E.; Trager, Barry M.; Van Oosten, James L.; Wait, Charles D.; Walkup, Robert E.; Watson, Alfred T.; Wisniewski, Robert W.; Wu, Peng

2015-07-14

A Multi-Petascale Highly Efficient Parallel Supercomputer of 100 petaOPS-scale computing, at decreased cost, power and footprint, and that allows for a maximum packaging density of processing nodes from an interconnect point of view. The Supercomputer exploits technological advances in VLSI that enables a computing model where many processors can be integrated into a single Application Specific Integrated Circuit (ASIC). Each ASIC computing node comprises a system-on-chip ASIC utilizing four or more processors integrated into one die, with each having full access to all system resources and enabling adaptive partitioning of the processors to functions such as compute or messaging I/O on an application by application basis, and preferably, enable adaptive partitioning of functions in accordance with various algorithmic phases within an application, or if I/O or other processors are underutilized, then can participate in computation or communication nodes are interconnected by a five dimensional torus network with DMA that optimally maximize the throughput of packet communications between nodes and minimize latency.

Coincidence of features of emitted THz electromagnetic wave power form a single Josephson junction and different current components

Science.gov (United States)

Hamdipour, Mohammad

2017-12-01

By applying a voltage to a Josephson junction, the charge in superconducting layers (S-layers) will oscillate. Wavelength of the charge oscillations in S-layers is related to external current in junction, by increasing the external current, the wavelength will decrease which cause in some currents the wavelength be incommensurate with width of junction, so the CVC shows Fiske like steps. External current throwing along junction has some components, resistive, capacitive and superconducting current, beside these currents there is a current in lateral direction of junction, (x direction). On the other hand, the emitted electromagnetic wave power in THz region is related to AC component of electric field in junction, which itself is related to charge density in S-layers, which is related to currents in the system. So we expect that features of variation of current components reflect the features of emitted THz power form junction. Here we study in detail the superconductive current in a long Josephson junction (JJ), the current voltage characteristics (CVC) of junction and emitted THz power from the system. Then we compare the results. Comparing the results we see that there is a good qualitative coincidence in features of emitted THz power and supercurrent in junction.

NREL, CSEM Jointly Set New Efficiency Record with Dual-Junction Solar Cell

Energy Technology Data Exchange (ETDEWEB)

2016-01-01

Scientists set a new world record for converting non-concentrated sunlight into electricity using a dual-junction III-V/Si solar cell. National Renewable Energy Laboratory (NREL) and Swiss Center for Electronics and Microtechnology (CSEM) scientists have collaborated to create a novel tandem solar cell that operates at 29.8% conversion efficiency under non-concentrator (1-sun) conditions. In comparison, the 1-sun efficiency of a silicon (Si) single-junction solar cell is probably still a few years away from converging on its practical limit of about 26%.

Multi-patch matching for person re-identification

Science.gov (United States)

Labidi, Hocine; Luo, Sen-Lin; Boubekeur, Mohamed B.; Benlefki, Tarek

2015-08-01

Recognizing a target object across non-overlapping distributed cameras is known in the computer vision community as the problem of person re-identification. In this paper, a multi-patch matching method for person reidentification is presented. Starting from the assumption that: the appearance (clothes) of a person does not change during the time of passing in different cameras field of view , which means the regions with the same color in target image will be identical while crossing cameras. First, we extract distinctive features in the training procedure, where each image target is devised into small patches, the SIFT features and LAB color histograms are computed for each patch. Then we use the KNN approach to detect group of patches with high similarity in the target image and then we use a bi-directional weighted group matching mechanism for the re-identification. Experiments on a challenging VIPeR dataset show that the performances of the proposed method outperform several baselines and state of the art approaches.

Edge currents in frustrated Josephson junction ladders

Science.gov (United States)

Marques, A. M.; Santos, F. D. R.; Dias, R. G.

2016-09-01

We present a numerical study of quasi-1D frustrated Josephson junction ladders with diagonal couplings and open boundary conditions, in the large capacitance limit. We derive a correspondence between the energy of this Josephson junction ladder and the expectation value of the Hamiltonian of an analogous tight-binding model, and show how the overall superconducting state of the chain is equivalent to the minimum energy state of the tight-binding model in the subspace of one-particle states with uniform density. To satisfy the constraint of uniform density, the superconducting state of the ladder is written as a linear combination of the allowed k-states of the tight-binding model with open boundaries. Above a critical value of the parameter t (ratio between the intra-rung and inter-rung Josephson couplings) the ladder spontaneously develops currents at the edges, which spread to the bulk as t is increased until complete coverage is reached. Above a certain value of t, which varies with ladder size (t = 1 for an infinite-sized ladder), the edge currents are destroyed. The value t = 1 corresponds, in the tight-binding model, to the opening of a gap between two bands. We argue that the disappearance of the edge currents with this gap opening is not coincidental, and that this points to a topological origin for these edge current states.

Hybrid tunnel junction contacts to III–nitride light-emitting diodes

KAUST Repository

Young, Erin C.; Yonkee, Benjamin P.; Wu, Feng; Oh, Sang Ho; DenBaars, Steven P.; Nakamura, Shuji; Speck, James S.

2016-01-01

In this work, we demonstrate highly doped GaN p–n tunnel junction (TJ) contacts on III–nitride heterostructures where the active region of the device and the top p-GaN layers were grown by metal organic chemical vapor deposition and highly doped n-GaN was grown by NH3 molecular beam epitaxy to form the TJ. The regrowth interface in these hybrid devices was found to have a high concentration of oxygen, which likely enhanced tunneling through the diode. For optimized regrowth, the best tunnel junction device had a total differential resistivity of 1.5 × 10−4 Ω cm2, including contact resistance. As a demonstration, a blue-light-emitting diode on a ($20\\bar{2}\\bar{1}$) GaN substrate with a hybrid tunnel junction and an n-GaN current spreading layer was fabricated and compared with a reference sample with a transparent conducting oxide (TCO) layer. The tunnel junction LED showed a lower forward operating voltage and a higher efficiency at a low current density than the TCO LED.

Hybrid tunnel junction contacts to III–nitride light-emitting diodes

KAUST Repository

Young, Erin C.

2016-01-26

In this work, we demonstrate highly doped GaN p–n tunnel junction (TJ) contacts on III–nitride heterostructures where the active region of the device and the top p-GaN layers were grown by metal organic chemical vapor deposition and highly doped n-GaN was grown by NH3 molecular beam epitaxy to form the TJ. The regrowth interface in these hybrid devices was found to have a high concentration of oxygen, which likely enhanced tunneling through the diode. For optimized regrowth, the best tunnel junction device had a total differential resistivity of 1.5 × 10−4 Ω cm2, including contact resistance. As a demonstration, a blue-light-emitting diode on a ($20\\\\bar{2}\\\\bar{1}$) GaN substrate with a hybrid tunnel junction and an n-GaN current spreading layer was fabricated and compared with a reference sample with a transparent conducting oxide (TCO) layer. The tunnel junction LED showed a lower forward operating voltage and a higher efficiency at a low current density than the TCO LED.

Experimental evaluation of IGBT junction temperature measurement via peak gate current

DEFF Research Database (Denmark)

Baker, Nick; Munk-Nielsen, Stig; Iannuzzo, Francesco

2015-01-01

Temperature sensitive electrical parameters allow junction temperature measurements on power semiconductors without modification to module packaging. The peak gate current has recently been proposed for IGBT junction temperature measurement and relies on the temperature dependent resistance...... of the gate pad. Consequently, a consideration of chip geometry and location of the gate pad is required before interpreting temperature data from this method. Results are also compared with a traditional electrical temperature measurement method: the voltage drop under low current....

Evaluation of the Kinetic Property of Single-Molecule Junctions by Tunneling Current Measurements.

Science.gov (United States)

Harashima, Takanori; Hasegawa, Yusuke; Kiguchi, Manabu; Nishino, Tomoaki

2018-01-01

We investigated the formation and breaking of single-molecule junctions of two kinds of dithiol molecules by time-resolved tunneling current measurements in a metal nanogap. The resulting current trajectory was statistically analyzed to determine the single-molecule conductance and, more importantly, to reveal the kinetic property of the single-molecular junction. These results suggested that combining a measurement of the single-molecule conductance and statistical analysis is a promising method to uncover the kinetic properties of the single-molecule junction.

Design of thin InGaAsN(Sb) n-i-p junctions for use in four-junction concentrating photovoltaic devices

Science.gov (United States)

Wilkins, Matthew M.; Gupta, James; Jaouad, Abdelatif; Bouzazi, Boussairi; Fafard, Simon; Boucherif, Abderraouf; Valdivia, Christopher E.; Arès, Richard; Aimez, Vincent; Schriemer, Henry P.; Hinzer, Karin

2017-04-01

Four-junction solar cells for space and terrestrial applications require a junction with a band gap of ˜1 eV for optimal performance. InGaAsN or InGaAsN(Sb) dilute nitride junctions have been demonstrated for this purpose, but in achieving the 14 mA/cm2 short-circuit current needed to match typical GaInP and GaAs junctions, the open-circuit voltage (VOC) and fill factor of these junctions are compromised. In multijunction devices incorporating materials with short diffusion lengths, we study the use of thin junctions to minimize sensitivity to varying material quality and ensure adequate transmission into lower junctions. An n-i-p device with 0.65-μm absorber thickness has sufficient short-circuit current, however, it relies less heavily on field-aided collection than a device with a 1-μm absorber. Our standard cell fabrication process, which includes a rapid thermal anneal of the contacts, yields a significant improvement in diffusion length and device performance. By optimizing a four-junction cell around a smaller 1-sun short-circuit current of 12.5 mA/cm2, we produced an InGaAsN(Sb) junction with open-circuit voltage of 0.44 V at 1000 suns (1 sun=100 mW/cm2), diode ideality factor of 1.4, and sufficient light transmission to allow >12.5 mA/cm2 in all four subcells.

Multiple negative differential resistance devices with ultra-high peak-to-valley current ratio for practical multi-valued logic and memory applications

Science.gov (United States)

Shin, Sunhae; Rok Kim, Kyung

2015-06-01

In this paper, we propose a novel multiple negative differential resistance (NDR) device with ultra-high peak-to-valley current ratio (PVCR) over 106 by combining tunnel diode with a conventional MOSFET, which suppresses the valley current with transistor off-leakage level. Band-to-band tunneling (BTBT) in tunnel junction provides the first peak, and the second peak and valley are generated from the suppression of diffusion current in tunnel diode by the off-state MOSFET. The multiple NDR curves can be controlled by doping concentration of tunnel junction and the threshold voltage of MOSFET. By using complementary multiple NDR devices, five-state memory is demonstrated only with six transistors.

Performace of Dilute Nitride Triple Junction Space Solar Cell Grown by MBE

Directory of Open Access Journals (Sweden)

Aho Arto

2017-01-01

Full Text Available Dilute nitride arsenide antimonide compounds offer widely tailorable band-gaps, ranging from 0.8 eV to 1.4 eV, for the development of lattice-matched multijunction solar cells with three or more junctions. Here we report on the performance of GaInP/GaAs/GaInNAsSb solar cell grown by molecular beam epitaxy. An efficiency of 27% under AM0 conditions is demonstrated. In addition, the cell was measured at different temperatures. The short circuit current density exhibited a temperature coefficient of 0.006 mA/cm2/°C while the corresponding slope for the open circuit voltage was −6.8 mV/°C. Further efficiency improvement, up to 32%, is projected by better current balancing and structural optimization.

Generation and detection of high-energy phonons by superconducting junctions

International Nuclear Information System (INIS)

Singer, I.L.

1976-01-01

Superconducting tunnel junctions are used to investigate the dynamics of energy exchange that takes place in superconductors driven out of equilibrium. In a Sn junction biased at a voltage V much greater than 2Δ(Sn)/e, the tunneling current sustains a continual energy exchange amongst the quasiparticles, phonons, and Cooper pairs. Repeatedly, high-energy quasiparticles decay, emitting phonons; and phonons with energy greater than 2Δ(Sn) break pairs, producing quasiparticles. The phonon-induced component of the current is recovered by synchronously detecting the full tunneling current with respect to a small modulation current in the generator. Sharp onsets observed at intervals of the gap energies require that the escaping phonons are produced by the direct decay of the injected quasiparticles and are not merely the high-energy tail of the thermalized phonons. Both primary and secondary phonons can be abserved distinctly. Theoretical transconductance curves have been computed. The experimental and theoretical curves are in good qualitative agreement. A more detailed comparison suggests that the escape rate of high-energy phonons depends on the energy of the phonons. The dependence of the observed transconductance signal on the temperature and the total junction thickness suggests that the presence of quasiparticles plays a major role in the escape of high-energy phonons. The dependence on temperature can be fitted to exp(b/kT), 0.74 less than b less than 1.05 MeV. It is speculated that the excitation energy is first transported across the superconductor and then carried out of the film by the phonons. It is concluded that high-energy phonons are a sensitive probe of the very reabsorption effects that make their escape so unlikely, and analysis of the detected phonons rich details of the behavior of superconductors removed from equilibrium

Efficient spin injection and giant magnetoresistance in Fe / MoS 2 / Fe junctions

KAUST Repository

Dolui, Kapildeb

2014-07-02

We demonstrate giant magnetoresistance in Fe/MoS2/Fe junctions by means of ab initio transport calculations. We show that junctions incorporating either a monolayer or a bilayer of MoS2 are metallic and that Fe acts as an efficient spin injector into MoS2 with an efficiency of about 45%. This is the result of the strong coupling between the Fe and S atoms at the interface. For junctions of greater thickness, a maximum magnetoresistance of ∼300% is obtained, which remains robust with the applied bias as long as transport is in the tunneling limit. A general recipe for improving the magnetoresistance in spin valves incorporating layered transition metal dichalcogenides is proposed. © 2014 American Physical Society.

Large-Area, Multi-Junction, Epitaxial Lift-Off Solar Cells with Backside Contacts, Phase II

Data.gov (United States)

National Aeronautics and Space Administration — In this Phase II program we propose to develop a manufacturable production process to introduce backside contacts to MicroLink Devices? large-area, multi-junction...

Large-Area, Multi-Junction, Epitaxial Lift-Off Solar Cells with Backside Contacts, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — In this Phase I program we propose to develop an innovative fabrication process to introduce backside contacts to MicroLink Devices' large-area, multi-junction...

Theoretical modeling and optimization of III-V GaInP/GaAs/Ge monolithic triple-junction solar cells

International Nuclear Information System (INIS)

Leem, Jung Woo; Yu, Jae Su; Kim, Jong Nam; Noh, Sam Kyu

2014-01-01

We design and optimize monolithic III-V GaInP/GaAs/Ge triple-junction (TJ) solar cells by using a commercial software Silvaco ATLAS simulator to obtain the maximum short-circuit current density J sc . The maximum J sc , which is a current matching value between the GaInP top and GaAs middle subcells, can be determined by varying the base thicknesses of the GaInP top and GaAs middle subcells. From the numerical simulation results, a matched maximum J sc value of 13.92 mA/cm 2 is obtained at base thicknesses of 0.57 μm and 3 μm for the GaInP top and GaAs middle subcells, respectively, under 1-sun air mass 1.5 global spectrum illumination, leading to a high power conversion efficiency of 30.72%. The open-circuit voltage and the fill factor are 2.55 V and 86.55%, respectively. For the optimized cell structure, the external quantum efficiency and the photogeneration rate distributions are also investigated. To obtain efficient antireflection coatings (ARCs), we perform optical reflectance calculations by using a rigorous coupled-wave analysis method. For this, a silicon oxide/titanium oxide double-layer is used as an ARC on the TJ solar cell.

Theoretical modeling and optimization of III-V GaInP/GaAs/Ge monolithic triple-junction solar cells

Energy Technology Data Exchange (ETDEWEB)

Leem, Jung Woo; Yu, Jae Su [Kyung Hee University, Yongin (Korea, Republic of); Kim, Jong Nam [Pukyung National University, Pusan (Korea, Republic of); Noh, Sam Kyu [Korea Research Institute of Standards and Science, Daejon (Korea, Republic of)

2014-05-15

We design and optimize monolithic III-V GaInP/GaAs/Ge triple-junction (TJ) solar cells by using a commercial software Silvaco ATLAS simulator to obtain the maximum short-circuit current density J{sub sc}. The maximum J{sub sc}, which is a current matching value between the GaInP top and GaAs middle subcells, can be determined by varying the base thicknesses of the GaInP top and GaAs middle subcells. From the numerical simulation results, a matched maximum J{sub sc} value of 13.92 mA/cm{sup 2} is obtained at base thicknesses of 0.57 μm and 3 μm for the GaInP top and GaAs middle subcells, respectively, under 1-sun air mass 1.5 global spectrum illumination, leading to a high power conversion efficiency of 30.72%. The open-circuit voltage and the fill factor are 2.55 V and 86.55%, respectively. For the optimized cell structure, the external quantum efficiency and the photogeneration rate distributions are also investigated. To obtain efficient antireflection coatings (ARCs), we perform optical reflectance calculations by using a rigorous coupled-wave analysis method. For this, a silicon oxide/titanium oxide double-layer is used as an ARC on the TJ solar cell.

Feasibilty of a Multi-bit Cell Perpendicular Magnetic Tunnel Junction Device

Science.gov (United States)

Kim, Chang Soo

The ultimate objective of this research project was to explore the feasibility of making a multi-bit cell perpendicular magnetic tunnel junction (PMTJ) device to increase the storage density of spin-transfer-torque random access memory (STT-RAM). As a first step toward demonstrating a multi-bit cell device, this dissertation contributed a systematic and detailed study of developing a single cell PMTJ device using L10 FePt films. In the beginning of this research, 13 up-and-coming non-volatile memory (NVM) technologies were investigated and evaluated to see whether one of them might outperform NAND flash memories and even HDDs on a cost-per-TB basis in 2020. This evaluation showed that STT-RAM appears to potentially offer superior power efficiency, among other advantages. It is predicted that STTRAM's density could make it a promising candidate for replacing NAND flash memories and possibly HDDs if STTRAM could be improved to store multiple bits per cell. Ta/Mg0 under-layers were used first in order to develop (001) L1 0 ordering of FePt at a low temperature of below 400 °C. It was found that the tradeoff between surface roughness and (001) L10 ordering of FePt makes it difficult to achieve low surface roughness and good perpendicular magnetic properties simultaneously when Ta/Mg0 under-layers are used. It was, therefore, decided to investigate MgO/CrRu under-layers to simultaneously achieve smooth films with good ordering below 400°C. A well ordered 4 nm L10 FePt film with RMS surface roughness close to 0.4 nm, perpendicular coercivity of about 5 kOe, and perpendicular squareness near 1 was obtained at a deposition temperature of 390 °C on a thermally oxidized Si substrate when MgO/CrRu under-layers are used. A PMTJ device was developed by depositing a thin MgO tunnel barrier layer and a top L10 FePt film and then being postannealed at 450 °C for 30 minutes. It was found that the sputtering power needs to be minimized during the thin MgO tunnel barrier

Large thermoelectric efficiency of doped polythiophene junction: A density functional study

Science.gov (United States)

Golsanamlou, Zahra; Bagheri Tagani, Meysam; Rahimpour Soleimani, Hamid

2018-06-01

The thermoelectric properties of polythiophene (PT) coupled to the Au (111) electrodes are studied based on density functional theory with nonequilibrium Green function formalism. Specially, the effect of Li and Cl adsorbents on the thermoelectric efficiency of the PT junction is investigated in different concentrations of the dopants for two lengths of the PT. Results show that the presence of dopants can bring the structural changes in the oligomer and modify the arrangement of the molecular levels leading to the dramatic changes in the transmission spectra of the junction. Therefore, the large enhancement in thermopower and consequently figure of merit is obtained by dopants which makes the doped PT junction as a beneficial thermoelectric device.

Online junction temperature measurement using peak gate current

DEFF Research Database (Denmark)

Baker, Nick; Munk-Nielsen, Stig; Iannuzzo, Francesco

2015-01-01

A new method for junction temperature measurement of MOS-gated power semiconductor switches is presented. The measurement method involves detecting the peak voltage over the external gate resistor of an IGBT or MOSFET during turn-on. This voltage is directly proportional to the peak gate current...

Josephson junction arrays

International Nuclear Information System (INIS)

Bindslev Hansen, J.; Lindelof, P.E.

1985-01-01

In this review we intend to cover recent work involving arrays of Josephson junctions. The work on such arrays falls naturally into three main areas of interest: 1. Technical applications of Josephson junction arrays for high-frequency devices. 2. Experimental studies of 2-D model systems (Kosterlitz-Thouless phase transition, commensurate-incommensurate transition in frustrated (flux) lattices). 3. Investigations of phenomena associated with non-equilibrium superconductivity in and around Josephson junctions (with high current density). (orig./BUD)

Enhancing light absorption within the carrier transport length in quantum junction solar cells.

Science.gov (United States)

Fu, Yulan; Hara, Yukihiro; Miller, Christopher W; Lopez, Rene

2015-09-10

Colloidal quantum dot (CQD) solar cells have attracted tremendous attention because of their tunable absorption spectrum window and potentially low processing cost. Recently reported quantum junction solar cells represent a promising approach to building a rectifying photovoltaic device that employs CQD layers on each side of the p-n junction. However, the ultimate efficiency of CQD solar cells is still highly limited by their high trap state density in both p- and n-type CQDs. By modeling photonic structures to enhance the light absorption within the carrier transport length and by ensuring that the carrier generation and collection efficiencies were both augmented, our work shows that overall device current density could be improved. We utilized a two-dimensional numerical model to calculate the characteristics of patterned CQD solar cells based on a simple grating structure. Our calculation predicts a short circuit current density as high as 31  mA/cm2, a value nearly 1.5 times larger than that of the conventional flat design, showing the great potential value of patterned quantum junction solar cells.

"V-junction": a novel structure for high-speed generation of bespoke droplet flows.

Science.gov (United States)

Ding, Yun; Casadevall i Solvas, Xavier; deMello, Andrew

2015-01-21

We present the use of microfluidic "V-junctions" as a droplet generation strategy that incorporates enhanced performance characteristics when compared to more traditional "T-junction" formats. This includes the ability to generate target-sized droplets from the very first one, efficient switching between multiple input samples, the production of a wide range of droplet sizes (and size gradients) and the facile generation of droplets with residence time gradients. Additionally, the use of V-junction droplet generators enables the suspension and subsequent resumption of droplet flows at times defined by the user. The high degree of operational flexibility allows a wide range of droplet sizes, payloads, spacings and generation frequencies to be obtained, which in turn provides for an enhanced design space for droplet-based experimentation. We show that the V-junction retains the simplicity of operation associated with T-junction formats, whilst offering functionalities normally associated with droplet-on-demand technologies.

The persistent current and energy spectrum on a driven mesoscopic LC-circuit with Josephson junction

Science.gov (United States)

Pahlavanias, Hassan

2018-03-01

The quantum theory for a mesoscopic electric circuit including a Josephson junction with charge discreteness is studied. By considering coupling energy of the mesoscopic capacitor in Josephson junction device, a Hamiltonian describing the dynamics of a quantum mesoscopic electric LC-circuit with charge discreteness is introduced. We first calculate the persistent current on a quantum driven ring including Josephson junction. Then we obtain the persistent current and energy spectrum of a quantum mesoscopic electrical circuit which includes capacitor, inductor, time-dependent external source and Josephson junction.

Technological development for super-high efficiency solar cells. Survey on the commercialization on analysis; Chokokoritsu taiyo denchi no gijutsu kaihatsu. Jitsuyoka kaiseki ni kansuru chosa kenkyu

Energy Technology Data Exchange (ETDEWEB)

Tatsuta, M [New Energy and Industrial Technology Development Organization, Tokyo (Japan)

1994-12-01

This paper reports the survey results on analysis of super-high efficiency solar cells for practical use in fiscal 1994. (1) On the survey on crystalline compound solar cells, it was pointed out that the present study target is III-V compound semiconductor solar cell, and efficiencies of 36-39% are theoretically expected by use of two-junction cells. (2) On structure of super-high efficiency solar cells of 40%, selection of upper and lower cell materials for multi-junction cells, high-efficiency tandem Si solar cells, and the merit and possibility of light collection operation were surveyed, and their issues were discussed. (3) On physical properties of mixed crystalline semiconductors and characteristic evaluation of solar cells, impurities, trap center, minority carrier life, and applicability of supper lattice structure to high-efficiency solar cells were surveyed. (4) On fabrication technology of compound semiconductor solar cells, various problems of and approaches to electrode formation and antireflection film technologies, the meaning and issues of thin film substrate technology and continuous process, trial calculation of costs, safety, and resource problem were surveyed.

Gap Junctions

Science.gov (United States)

Nielsen, Morten Schak; Axelsen, Lene Nygaard; Sorgen, Paul L.; Verma, Vandana; Delmar, Mario; Holstein-Rathlou, Niels-Henrik

2013-01-01

Gap junctions are essential to the function of multicellular animals, which require a high degree of coordination between cells. In vertebrates, gap junctions comprise connexins and currently 21 connexins are known in humans. The functions of gap junctions are highly diverse and include exchange of metabolites and electrical signals between cells, as well as functions, which are apparently unrelated to intercellular communication. Given the diversity of gap junction physiology, regulation of gap junction activity is complex. The structure of the various connexins is known to some extent; and structural rearrangements and intramolecular interactions are important for regulation of channel function. Intercellular coupling is further regulated by the number and activity of channels present in gap junctional plaques. The number of connexins in cell-cell channels is regulated by controlling transcription, translation, trafficking, and degradation; and all of these processes are under strict control. Once in the membrane, channel activity is determined by the conductive properties of the connexin involved, which can be regulated by voltage and chemical gating, as well as a large number of posttranslational modifications. The aim of the present article is to review our current knowledge on the structure, regulation, function, and pharmacology of gap junctions. This will be supported by examples of how different connexins and their regulation act in concert to achieve appropriate physiological control, and how disturbances of connexin function can lead to disease. © 2012 American Physiological Society. Compr Physiol 2:1981-2035, 2012. PMID:23723031

A mixture model for robust point matching under multi-layer motion.

Directory of Open Access Journals (Sweden)

Jiayi Ma

Full Text Available This paper proposes an efficient mixture model for establishing robust point correspondences between two sets of points under multi-layer motion. Our algorithm starts by creating a set of putative correspondences which can contain a number of false correspondences, or outliers, in addition to the true correspondences (inliers. Next we solve for correspondence by interpolating a set of spatial transformations on the putative correspondence set based on a mixture model, which involves estimating a consensus of inlier points whose matching follows a non-parametric geometrical constraint. We formulate this as a maximum a posteriori (MAP estimation of a Bayesian model with hidden/latent variables indicating whether matches in the putative set are outliers or inliers. We impose non-parametric geometrical constraints on the correspondence, as a prior distribution, in a reproducing kernel Hilbert space (RKHS. MAP estimation is performed by the EM algorithm which by also estimating the variance of the prior model (initialized to a large value is able to obtain good estimates very quickly (e.g., avoiding many of the local minima inherent in this formulation. We further provide a fast implementation based on sparse approximation which can achieve a significant speed-up without much performance degradation. We illustrate the proposed method on 2D and 3D real images for sparse feature correspondence, as well as a public available dataset for shape matching. The quantitative results demonstrate that our method is robust to non-rigid deformation and multi-layer/large discontinuous motion.

Current responsivity of semiconductor superlattice THz-photon detectors

DEFF Research Database (Denmark)

Ignatov, Anatoly A.; Jauho, Antti-Pekka

1999-01-01

The current responsivity of a semiconductor superlattice THz-photon detector is calculated using an equivalent circuit model which takes into account the finite matching efficiency between a detector antenna and the superlattice in the presence of parasitic losses. Calculations performed for curr......The current responsivity of a semiconductor superlattice THz-photon detector is calculated using an equivalent circuit model which takes into account the finite matching efficiency between a detector antenna and the superlattice in the presence of parasitic losses. Calculations performed...... for currently available superlattice diodes show that both the magnitudes and the roll-off frequencies of the responsivity are strongly influenced by an excitation of hybrid plasma-Bloch oscillations which are found to be eigenmodes of the system in the THz-frequency band. The expected room temperature values...... of the responsivity (2–3 A/W in the 1–3 THz-frequency band) range up to several percents of the quantum efficiency e/[h-bar] omega of an ideal superconductor tunnel junction detector. Properly designed semiconductor superlattice detectors may thus demonstrate better room temperature THz-photon responsivity than...

Charge splitters and charge transport junctions based on guanine quadruplexes

Science.gov (United States)

Sha, Ruojie; Xiang, Limin; Liu, Chaoren; Balaeff, Alexander; Zhang, Yuqi; Zhang, Peng; Li, Yueqi; Beratan, David N.; Tao, Nongjian; Seeman, Nadrian C.

2018-04-01

Self-assembling circuit elements, such as current splitters or combiners at the molecular scale, require the design of building blocks with three or more terminals. A promising material for such building blocks is DNA, wherein multiple strands can self-assemble into multi-ended junctions, and nucleobase stacks can transport charge over long distances. However, nucleobase stacking is often disrupted at junction points, hindering electric charge transport between the two terminals of the junction. Here, we show that a guanine-quadruplex (G4) motif can be used as a connector element for a multi-ended DNA junction. By attaching specific terminal groups to the motif, we demonstrate that charges can enter the structure from one terminal at one end of a three-way G4 motif, and can exit from one of two terminals at the other end with minimal carrier transport attenuation. Moreover, we study four-way G4 junction structures by performing theoretical calculations to assist in the design and optimization of these connectors.

Multi-data reservoir history matching for enhanced reservoir forecasting and uncertainty quantification

KAUST Repository

Katterbauer, Klemens

2015-04-01

Reservoir simulations and history matching are critical for fine-tuning reservoir production strategies, improving understanding of the subsurface formation, and forecasting remaining reserves. Production data have long been incorporated for adjusting reservoir parameters. However, the sparse spatial sampling of this data set has posed a significant challenge for efficiently reducing uncertainty of reservoir parameters. Seismic, electromagnetic, gravity and InSAR techniques have found widespread applications in enhancing exploration for oil and gas and monitoring reservoirs. These data have however been interpreted and analyzed mostly separately, rarely exploiting the synergy effects that could result from combining them. We present a multi-data ensemble Kalman filter-based history matching framework for the simultaneous incorporation of various reservoir data such as seismic, electromagnetics, gravimetry and InSAR for best possible characterization of the reservoir formation. We apply an ensemble-based sensitivity method to evaluate the impact of each observation on the estimated reservoir parameters. Numerical experiments for different test cases demonstrate considerable matching enhancements when integrating all data sets in the history matching process. Results from the sensitivity analysis further suggest that electromagnetic data exhibit the strongest impact on the matching enhancements due to their strong differentiation between water fronts and hydrocarbons in the test cases.

Effect of parallel transport currents on the d-wave Josephson junction

International Nuclear Information System (INIS)

Rashedi, Gholamreza

2009-01-01

In this paper, the non-local mixing of coherent current states in d-wave superconducting banks is investigated. The superconducting banks are connected via a ballistic point contact. The banks have mis-orientation and phase difference. Furthermore, they are subjected to a tangential transport current along the ab plane of d-wave crystals and parallel to the interface between the superconductors. The effects of mis-orientation and external transport current on the current-phase relations and current distributions are the subjects of this paper. It is observed that, at values of phase difference close to 0, π and 2π, the current distribution may have a vortex-like form in the vicinity of the point contact. The current distribution of the above-mentioned junction between d-wave superconductors is totally different from the junction between s-wave superconductors. The interesting result which this study shows is that spontaneous and Josephson currents are observed for the case of φ = 0.

Junction and circuit fabrication

International Nuclear Information System (INIS)

Jackel, L.D.

1980-01-01

Great strides have been made in Josephson junction fabrication in the four years since the first IC SQUID meeting. Advances in lithography have allowed the production of devices with planar dimensions as small as a few hundred angstroms. Improved technology has provided ultra-high sensitivity SQUIDS, high-efficiency low-noise mixers, and complex integrated circuits. This review highlights some of the new fabrication procedures. The review consists of three parts. Part 1 is a short summary of the requirements on junctions for various applications. Part 2 reviews intergrated circuit fabrication, including tunnel junction logic circuits made at IBM and Bell Labs, and microbridge radiation sources made at SUNY at Stony Brook. Part 3 describes new junction fabrication techniques, the major emphasis of this review. This part includes a discussion of small oxide-barrier tunnel junctions, semiconductor barrier junctions, and microbridge junctions. Part 3 concludes by considering very fine lithography and limitations to miniaturization. (orig.)

Optimized electrode configuration for current-in-plane characterization of magnetic tunnel junction stacks

International Nuclear Information System (INIS)

Cagliani, A; Kjær, D; Østerberg, F W; Hansen, O; Petersen, D H; Nielsen, P F

2017-01-01

The current-in-plane tunneling technique (CIPT) has been a crucial tool in the development of magnetic tunnel junction stacks suitable for magnetic random access memories (MRAM) for more than a decade. The MRAM development has now reached the maturity to make the transition from the R and D phase to the pilot production phase. This will require an improvement in the repeatability of the CIPT metrology technique. Here, we present an analytical model that can be used to simulate numerically the repeatability of a CIPT measurement for an arbitrary MTJ stack prior to any CIPT measurement. The model describes mathematically the main sources of error arising when a micro multi-electrode probe is used to perform a CIPT measurement. The numerically simulated repeatability values obtained on four different MTJ stacks are verified by experimental data and the model is used to optimize the choice of electrodes on a multi-electrode probe to reach up to 36% improvement on the repeatability for the resistance area product and the tunneling magnetoresistance measurement, without any hardware modification. (paper)

New III-V cell design approaches for very high efficiency

Energy Technology Data Exchange (ETDEWEB)

Lundstrom, M.S.; Melloch, M.R.; Lush, G.B.; Patkar, M.P.; Young, M.P. (Purdue Univ., Lafayette, IN (United States))

1993-04-01

This report describes to examine new solar cell desip approaches for achieving very high conversion efficiencies. The program consists of two elements. The first centers on exploring new thin-film approaches specifically designed for M-III semiconductors. Substantial efficiency gains may be possible by employing light trapping techniques to confine the incident photons, as well as the photons emitted by radiative recombination. The thin-film approach is a promising route for achieving substantial performance improvements in the already high-efficiency, single-junction, III-V cell. The second element of the research involves exploring desip approaches for achieving high conversion efficiencies without requiring extremely high-quality material. This work has applications to multiple-junction cells, for which the selection of a component cell often involves a compromise between optimum band pp and optimum material quality. It could also be a benefit manufacturing environment by making the cell's efficiency less dependent on materialquality.

Efficient Multi-Party Computation over Rings

DEFF Research Database (Denmark)

Cramer, Ronald; Fehr, Serge; Ishai, Yuval

2003-01-01

Secure multi-party computation (MPC) is an active research area, and a wide range of literature can be found nowadays suggesting improvements and generalizations of existing protocols in various directions. However, all current techniques for secure MPC apply to functions that are represented by ...... the usefulness of the above results by presenting a novel application of MPC over (non-field) rings to the round-efficient secure computation of the maximum function. Basic Research in Computer Science (www.brics.dk), funded by the Danish National Research Foundation.......Secure multi-party computation (MPC) is an active research area, and a wide range of literature can be found nowadays suggesting improvements and generalizations of existing protocols in various directions. However, all current techniques for secure MPC apply to functions that are represented...... by (boolean or arithmetic) circuits over finite fields. We are motivated by two limitations of these techniques: – Generality. Existing protocols do not apply to computation over more general algebraic structures (except via a brute-force simulation of computation in these structures). – Efficiency. The best...

Scaling for quantum tunneling current in nano- and subnano-scale plasmonic junctions.

Science.gov (United States)

Zhang, Peng

2015-05-19

When two conductors are separated by a sufficiently thin insulator, electrical current can flow between them by quantum tunneling. This paper presents a self-consistent model of tunneling current in a nano- and subnano-meter metal-insulator-metal plasmonic junction, by including the effects of space charge and exchange correlation potential. It is found that the J-V curve of the junction may be divided into three regimes: direct tunneling, field emission, and space-charge-limited regime. In general, the space charge inside the insulator reduces current transfer across the junction, whereas the exchange-correlation potential promotes current transfer. It is shown that these effects may modify the current density by orders of magnitude from the widely used Simmons' formula, which is only accurate for a limited parameter space (insulator thickness > 1 nm and barrier height > 3 eV) in the direct tunneling regime. The proposed self-consistent model may provide a more accurate evaluation of the tunneling current in the other regimes. The effects of anode emission and material properties (i.e. work function of the electrodes, electron affinity and permittivity of the insulator) are examined in detail in various regimes. Our simple model and the general scaling for tunneling current may provide insights to new regimes of quantum plasmonics.

Probing electrical transport in individual carbon nanotubes and junctions

International Nuclear Information System (INIS)

Kim, Tae-Hwan; Wendelken, John F; Li Anping; Du Gaohui; Li Wenzhi

2008-01-01

The electrical transport properties of individual carbon nanotubes (CNTs) and multi-terminal junctions of CNTs are investigated with a quadraprobe scanning tunneling microscope. The CNTs used in this study are made of stacked herringbone-type conical graphite sheets with a cone angle of ∼20 deg. to the tube axis, and the CNT junctions have no catalytic particles in the junction areas. The CNTs have a significantly higher resistivity than conventional CNTs with concentric walls. The straight CNTs display linear current-voltage (I-V) characteristics, indicating diffusive transport rather than ballistic transport. The structural deformation in CNTs with bends substantially increases the resistivity in comparison with that for the straight segments on the same CNTs, and the I-V curve departs slightly from linearity in curved segments. The junction area of the CNT junctions behaves like an ohmic-type scattering center with linear I-V characteristics. In addition, a gating effect has not been observed, in contrast to the case for conventional multi-walled CNT junctions. These unusual transport properties can be attributed to the enhanced inter-layer interaction in the herringbone-type CNTs.

Optimization of Recombination Layer in the Tunnel Junction of Amorphous Silicon Thin-Film Tandem Solar Cells

Directory of Open Access Journals (Sweden)

Yang-Shin Lin

2011-01-01

Full Text Available The amorphous silicon/amorphous silicon (a-Si/a-Si tandem solar cells have attracted much attention in recent years, due to the high efficiency and low manufacturing cost compared to the single-junction a-Si solar cells. In this paper, the tandem cells are fabricated by high-frequency plasma-enhanced chemical vapor deposition (HF-PECVD at 27.1 MHz. The effects of the recombination layer and the i-layer thickness matching on the cell performance have been investigated. The results show that the tandem cell with a p+ recombination layer and i2/i1 thickness ratio of 6 exhibits a maximum efficiency of 9.0% with the open-circuit voltage (Voc of 1.59 V, short-circuit current density (Jsc of 7.96 mA/cm2, and a fill factor (FF of 0.70. After light-soaking test, our a-Si/a-Si tandem cell with p+ recombination layer shows the excellent stability and the stabilized efficiency of 8.7%.

Barrier Parameters and Current Transport Characteristics of Ti/ p-InP Schottky Junction Modified Using Orange G (OG) Organic Interlayer

Science.gov (United States)

Sreenu, K.; Venkata Prasad, C.; Rajagopal Reddy, V.

2017-10-01

A Ti/Orange G/ p-InP metal/interlayer/semiconductor (MIS) junction has been prepared with Orange G (OG) organic layer by electron beam evaporation and spin coating processes. The electrical properties of Ti/ p-InP metal/semiconductor (MS) and Ti/OG/ p-InP MIS junctions have been analyzed based on current-voltage ( I- V) and capacitance-voltage ( C- V) characteristics. The MIS junction exhibited higher rectifying behavior than the MS junction. The higher barrier height (BH) of the MIS junction compared with the MS junction indicates effective modification by the OG layer. Also, the BH, ideality factor, shunt resistance, and series resistance were extracted based on the I- V characteristic, Cheung's and Norde's methods, and the ΨS- V plot. The BH evaluated by Cheung's and Norde's methods and the ΨS- V plot was shown to be similar, confirming the reliability and validity of the methods applied. The extracted interface state density ( N SS) of the MIS junction was less than for the MS junction, revealing that the OG organic layer reduced the N SS value. Analysis demonstrated that, in the lower bias region, the reverse current conduction mechanism was dominated by Poole-Frenkel emission for both the MS and MIS junction. Meanwhile, in the higher bias region, Schottky emission governed the reverse current conduction mechanism. The results suggest that such OG layers have potential for use in high-quality electronic devices.

Junction structures based on the high-Tc superconductor YBa2Cu3O7-δ

International Nuclear Information System (INIS)

Gijs, M.A.M.

1993-01-01

An overview is given of the investigations of the Josephson effect in junction structures based on the high-T c superconductor YBa 2 Cu 3 O 7-δ , which were carried out at the Philips Research Laboratories in Eindhoven in the 1988-1990 period. The reported results are presented in their international scientific context, without attempting a complete review of the subject. However, the various junction types studied give a good idea of the scientific pursuits of high-T c junction researchers in this period. The following junctions are considered: in the category of 'weak link'-type junctions we have investigated YBa 2 Cu 3 O 7-δ -Ag-Nb point contact junctions, YBa 2 Cu 3 O 7-δ Dayem bridges and YBa 2 Cu 3 O 7-δ -Ag(-Al)-Pb proximity junctions. In these structures we combine a high-T c with a low-T c superconductor. We also fabricated planar 'all high-T c ' YBa 2 Cu 3 O 7-δ -Ag-YBa 2 Cu 3 O 7-δ junctions using a submicron structuring process. Next we have made tunnel junctions to study density of states effects of the high-T c superconductor : YBa 2 Cu 3 O 7-δ -Pb junctions using the degraded YBa 2 Cu 3 O 7-δ -Pb interface as a tunnel barrier, and YBa 2 Cu 3 O 7-δ -Ag-Al/Al 2 O 3 /Pb tunnel junctions based on the superconducting proximity effect. Our junction structures are electrically characterized and mostly studied in microwave and magnetic fields. Results are compared with current theoretical models. (orig.)

Perovskite Solar Cells for High-Efficiency Tandems

Energy Technology Data Exchange (ETDEWEB)

McGehee, Michael [Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States); Buonassisi, Tonio [Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)

2017-09-30

The first monolithic perovskite/silicon tandem was made with a diffused silicon p-n junction, a tunnel junction made of n⁺⁺ hydrogenated amorphous silicon, a titania electron transport layer, a methylammonium lead iodide absorber, and a Spiro-OMeTAD hole transport layer (HTL). The power conversion efficiency (PCE) was only 13.7% due to excessive parasitic absorption of light in the HTL, limiting the matched current density to 11.5 mA/cm². Werner et al.¹⁵ raised the PCE to a record 21.2% by switching to a silicon heterojunction bottom cell and carefully tuning layer thicknesses to achieve lower optical loss and a higher current density of 15.9 mA/cm². It is clear from these reports that minimizing parasitic absorption in the window layers is crucial to achieving higher current densities and efficiencies in monolithic tandems. To this end, the window layers through which light first passes before entering the perovskite and silicon absorber materials must be highly transparent. The front electrode must also be conductive to carry current laterally across the top of the device. Indium tin oxide (ITO) is widely utilized as a transparent electrode in optoelectronic devices such as flat-panel displays, smart windows, organic light-emitting diodes, and solar cells due to its high conductivity and broadband transparency. ITO is typically deposited through magnetron sputtering; however, the high kinetic energy of sputtered particles can damage underlying layers. In perovskite solar cells, a sputter buffer layer is required to protect the perovskite and organic carrier extraction layers from damage during sputter deposition. The ideal buffer layer should also be energetically well aligned so as to act as a carrier-selective contact, have a wide bandgap to enable high optical transmission, and have no reaction with the halides in the perovskite. Additionally, this buffer layer should act as a diffusion barrier layer to prevent both

A multi-pattern hash-binary hybrid algorithm for URL matching in the HTTP protocol.

Directory of Open Access Journals (Sweden)

Ping Zeng

Full Text Available In this paper, based on our previous multi-pattern uniform resource locator (URL binary-matching algorithm called HEM, we propose an improved multi-pattern matching algorithm called MH that is based on hash tables and binary tables. The MH algorithm can be applied to the fields of network security, data analysis, load balancing, cloud robotic communications, and so on-all of which require string matching from a fixed starting position. Our approach effectively solves the performance problems of the classical multi-pattern matching algorithms. This paper explores ways to improve string matching performance under the HTTP protocol by using a hash method combined with a binary method that transforms the symbol-space matching problem into a digital-space numerical-size comparison and hashing problem. The MH approach has a fast matching speed, requires little memory, performs better than both the classical algorithms and HEM for matching fields in an HTTP stream, and it has great promise for use in real-world applications.

Phase dynamics of low critical current density YBCO Josephson junctions

Energy Technology Data Exchange (ETDEWEB)

Massarotti, D., E-mail: dmassarotti@na.infn.it [Dipartimento di Fisica, Università degli Studi di Napoli Federico II, Via Cinthia, 80126 Napoli (Italy); CNR-SPIN UOS Napoli, Complesso Universitario di Monte Sant’Angelo, Via Cinthia, 80126 Napoli (Italy); Stornaiuolo, D. [Dipartimento di Fisica, Università degli Studi di Napoli Federico II, Via Cinthia, 80126 Napoli (Italy); Rotoli, G. [Dipartimento di Ingegneria Industriale e dell’Informazione, Seconda Università di Napoli, Via Roma 29, 81031 Aversa (CE) (Italy); Carillo, F. [Nest, Scuola Normale Superiore, Piazza San Silvestro 12, 56126 Pisa (Italy); Galletti, L. [Dipartimento di Fisica, Università degli Studi di Napoli Federico II, Via Cinthia, 80126 Napoli (Italy); CNR-SPIN UOS Napoli, Complesso Universitario di Monte Sant’Angelo, Via Cinthia, 80126 Napoli (Italy); Longobardi, L. [Dipartimento di Ingegneria Industriale e dell’Informazione, Seconda Università di Napoli, Via Roma 29, 81031 Aversa (CE) (Italy); American Physical Society, 1 Research Road, Ridge, NY 11961 (United States); Beltram, F. [Nest, Scuola Normale Superiore, Piazza San Silvestro 12, 56126 Pisa (Italy); Tafuri, F. [CNR-SPIN UOS Napoli, Complesso Universitario di Monte Sant’Angelo, Via Cinthia, 80126 Napoli (Italy); Dipartimento di Ingegneria Industriale e dell’Informazione, Seconda Università di Napoli, Via Roma 29, 81031 Aversa (CE) (Italy)

2014-08-15

Highlights: • We study the phase dynamics of YBaCuO Josephson junctions using various tools. • We derive information on the dissipation in a wide range of transport parameters. • Dissipation in such devices can be described by a frequency dependent damping model. • The use of different substrates allows us to tune the shell circuit. - Abstract: High critical temperature superconductors (HTS) based devices can have impact in the study of the phase dynamics of Josephson junctions (JJs) thanks to the wide range of junction parameters they offer and to their unconventional properties. Measurements of current–voltage characteristics and of switching current distributions constitute a direct way to classify different regimes of the phase dynamics and of the transport, also in nontrivial case of the moderately damped regime (MDR). MDR is going to be more and more common in JJs with advances in nanopatterning superconductors and synthesizing novel hybrid systems. Distinctive signatures of macroscopic quantum tunneling and of thermal activation in presence of different tunable levels of dissipation have been detected in YBCO grain boundary JJs. Experimental data are supported by Monte Carlo simulations of the phase dynamics, in a wide range of temperatures and dissipation levels. This allows us to quantify dissipation in the MDR and partially reconstruct a phase diagram as guideline for a wide range of moderately damped systems.

Coherent current states in mesoscopic four-terminal Josephson junction

International Nuclear Information System (INIS)

Zareyan, M.; Omelyanchouk, A.N.

1999-01-01

A theory is offered for the ballistic 4-terminal Josephson junction. The studied system consist of a mesoscopic two-dimensional normal rectangular layer which is attached on each side to the bulk superconducting banks (terminals). A relation is obtained between the currents through the different terminals, that is valid for arbitrary temperatures and junction sizes. The nonlocal coupling of the supercurrent leads to a new effect, specific for the mesoscopic weak link between two superconducting rings; an applied magnetic flux through one of the rings produces a magnetic flux in the other ring even in the absence of an external flux through the other one. The phase dependent distributions of the local density of Andreev states, of the supercurrents and of the induced order parameter are obtained. The 'interference pattern' for the anomalous average inside the two-dimensional region cam be regulated by the applied magnetic fluxes or the transport currents. For some values of the phase differences between the terminals, the current vortex state and two-dimensional phase slip center appear

Terahertz Responses of Intrinsic Josephson Junctions in High TC Superconductors

International Nuclear Information System (INIS)

Wang, H. B.; Wu, P. H.; Yamashita, T.

2001-01-01

High frequency responses of intrinsic Josephson junctions up to 2.5THz, including the observation of Shapiro steps under various conditions, are reported and discussed in this Letter. The sample was an array of intrinsic Josephson junctions singled out from inside a high T C superconducting Bi 2 Sr 2 CaCu 2 O 8+x single crystal, with a bow-tie antenna integrated to it. The number of junctions in the array was controllable, the junctions were homogeneous, the distribution of applied irradiation among the junctions was even, and the junctions could synchronously respond to high frequency irradiation

Influence of surface losses and the self-pumping effect on current-voltage characteristics of a long Josephson junction

DEFF Research Database (Denmark)

Pankratov, A.L.; Sobolev, A.S.; Koshelets, V.P.

2007-01-01

We have numerically investigated the dynamics of a long linear Josephson tunnel junction with overlap geometry. Biased by a direct current (dc) and an applied dc magnetic field, the junction has important applications as tunable high frequency oscillator [flux-flow oscillator (FFO......) placed at both ends of the FFO. In our model, the damping parameter depends both on the spatial coordinate and on the amplitude of the ac voltage. In order to find the dc current-voltage curves, the damping parameter has to be calculated self-consistently by successive approximations and time integration...

Quantum Junction Solar Cells

KAUST Repository

Tang, Jiang

2012-09-12

Colloidal quantum dot solids combine convenient solution-processing with quantum size effect tuning, offering avenues to high-efficiency multijunction cells based on a single materials synthesis and processing platform. The highest-performing colloidal quantum dot rectifying devices reported to date have relied on a junction between a quantum-tuned absorber and a bulk material (e.g., TiO 2); however, quantum tuning of the absorber then requires complete redesign of the bulk acceptor, compromising the benefits of facile quantum tuning. Here we report rectifying junctions constructed entirely using inherently band-aligned quantum-tuned materials. Realizing these quantum junction diodes relied upon the creation of an n-type quantum dot solid having a clean bandgap. We combine stable, chemically compatible, high-performance n-type and p-type materials to create the first quantum junction solar cells. We present a family of photovoltaic devices having widely tuned bandgaps of 0.6-1.6 eV that excel where conventional quantum-to-bulk devices fail to perform. Devices having optimal single-junction bandgaps exhibit certified AM1.5 solar power conversion efficiencies of 5.4%. Control over doping in quantum solids, and the successful integration of these materials to form stable quantum junctions, offers a powerful new degree of freedom to colloidal quantum dot optoelectronics. © 2012 American Chemical Society.

Thermally activated phase slippage in high- T sub c grain-boundary Josephson junctions

Energy Technology Data Exchange (ETDEWEB)

Gross, R.; Chaudhari, P.; Dimos, D.; Gupta, A.; Koren, G. (IBM Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598 (USA))

1990-01-08

The effect of thermally activated phase slippage (TAPS) in YBa{sub 2}Cu{sub 3}O{sub 7} grain-boundary Josephson junctions has been studied. TAPS has been found to be responsible for the dc noise voltage superimposed on the dc Josephson current near the transition temperature. Because of the reduced Josephson coupling energy of the grain-boundary junctions, which is caused by a reduced superconducting order parameter at the grain-boundary interface, TAPS is present over a considerable temperature range. The implications of TAPS on the applicability of high-{ital T}{sub {ital c}} Josephson junctions are outlined.

Fully Valley/spin polarized current and Fano factor through the Graphene/ferromagnetic silicene/Graphene junction

Energy Technology Data Exchange (ETDEWEB)

Rashidian, Zeinab; Rezaeipour, Saeid [Department of Physics, Faculty of Science, Lorestan University, Lorestan (Iran, Islamic Republic of); Hajati, Yaser [Department of Physics, Faculty of Science, Shahid Chamran University of Ahvaz, Ahvaz (Iran, Islamic Republic of); Lorestaniweiss, Zeinab, E-mail: rashidian1983z@gmail.com [Department of Physics, Faculty of Science, Lorestan University, Lorestan (Iran, Islamic Republic of); Ueda, Akiko [Faculty of Pure and Applied Sciences, University of Tsukuba, Tsukuba (Japan)

2017-02-15

In this work, we study the transport properties of Dirac fermions through the ferromagnetic silicene which is sandwiched between the Graphene leads (G/FS/G). Spin/valley conductance, spin/valley polarization, and also Fano factor are theoretically calculated using the Landauer-Buttiker formula. We find that the fully valley and spin polarized currents through the G/FS/G junction can be obtained by increasing the electric field strength and the length of ferromagnetic silicene region. Moreover, the valley polarization can be tuned from negative to positive values by changing the electric field. We find that the Fano factor also changes with the spin and valley polarization. Our findings of high controllability of the spin and valley transport in such a G/FS/G junction the potential of this junction for spin-valleytronics applications.

Efficient switching of 3-terminal magnetic tunnel junctions by the giant spin Hall effect of Pt85Hf15 alloy

Science.gov (United States)

Nguyen, Minh-Hai; Shi, Shengjie; Rowlands, Graham E.; Aradhya, Sriharsha V.; Jermain, Colin L.; Ralph, D. C.; Buhrman, R. A.

2018-02-01

Recent research has indicated that introducing impurities that increase the resistivity of Pt can enhance the efficiency of the spin Hall torque it generates. Here, we directly demonstrate the usefulness of this strategy by fabricating prototype 3-terminal in-plane-magnetized magnetic tunnel junctions that utilize the spin Hall torque from a Pt85Hf15 alloy and measuring the critical currents for switching. We find that Pt85Hf15 reduces the switching current densities compared to pure Pt by approximately a factor of 2 for both quasi-static ramped current biases and nanosecond-scale current pulses, thereby proving the feasibility of this approach in assisting the development of efficient embedded magnetic memory technologies.

Multi data reservior history matching and uncertainty quantification framework

KAUST Repository

Katterbauer, Klemens; Hoteit, Ibrahim; Sun, Shuyu

2015-01-01

A multi-data reservoir history matching and uncertainty quantification framework is provided. The framework can utilize multiple data sets such as production, seismic, electromagnetic, gravimetric and surface deformation data for improving

Theoretical calculation of performance enhancement in lattice-matched SiGeSn/GeSn p-channel tunneling field-effect transistor with type-II staggered tunneling junction

Science.gov (United States)

Wang, Hongjuan; Han, Genquan; Wang, Yibo; Peng, Yue; Liu, Yan; Zhang, Chunfu; Zhang, Jincheng; Hu, Shengdong; Hao, Yue

2016-04-01

In this work, a lattice-matched SiGeSn/GeSn heterostructure p-channel tunneling field-effect transistor (hetero-PTFET) with a type-II staggered tunneling junction (TJ) is investigated theoretically. Lattice matching and type-II band alignment at the Γ-point is obtained at the SiGeSn/GeSn interface by tuning Sn and Si compositions. A steeper subthreshold swing (SS) and a higher on state current (I ON) are demonstrated in SiGeSn/GeSn hetero-PTFET than in GeSn homo-PTFET. Si0.31Ge0.49Sn0.20/Ge0.88Sn0.12 hetero-PTFET achieves a 2.3-fold higher I ON than Ge0.88Sn0.12 homo-PTFET at V DD of 0.3 V. Hetero-PTFET achieves a more abrupt hole profile and a higher carrier density near TJ than the homo-PTFET, which contributes to the significantly enhanced band-to-band tunneling (BTBT) rate and tunneling current in hetero-PTFET.

Charge and spin current oscillations in a tunnel junction induced by magnetic field pulses

Energy Technology Data Exchange (ETDEWEB)

Dartora, C.A., E-mail: cadartora@eletrica.ufpr.br [Electrical Engineering Department, Federal University of Parana (UFPR), C.P. 19011 Curitiba, 81.531-970 PR (Brazil); Nobrega, K.Z., E-mail: bzuza1@yahoo.com.br [Federal Institute of Education, Science and Technolgy of Maranhão (IFMA), Av. Marechal Castelo Branco, 789, São Luís, 65.076-091 MA (Brazil); Cabrera, G.G., E-mail: cabrera@ifi.unicamp.br [Instituto de Física ‘Gleb Wataghin’, Universidade Estadual de Campinas (UNICAMP), C.P. 6165, Campinas 13.083-970 SP (Brazil)

2016-08-15

Usually, charge and spin transport properties in tunnel junctions are studied in the DC bias regime and/or in the adiabatic regime of time-varying magnetic fields. In this letter, the temporal dynamics of charge and spin currents in a tunnel junction induced by pulsed magnetic fields is considered. At low bias voltages, energy and momentum of the conduction electrons are nearly conserved in the tunneling process, leading to the description of the junction as a spin-1/2 fermionic system coupled to time-varying magnetic fields. Under the influence of pulsed magnetic fields, charge and spin current can flow across the tunnel junction, displaying oscillatory behavior, even in the absence of DC bias voltage. A type of spin capacitance function, in close analogy to electric capacitance, is predicted.

Investigation of the tunnel magnetoresistance in junctions with a strontium stannate barrier

Science.gov (United States)

Althammer, Matthias; Mishra, Rohan; Borisevich, Albina J.; Singh, Amit Vikam; Keshavarz, Sahar; Yurtisigi, Mehmet Kenan; Leclair, Patrick; Gupta, Arunava

We experimentally investigate the structural, magnetic and electrical transport properties of La0.67Sr0.33MnO3 based magnetic tunnel junctions with a SrSnO3 barrier. Our results show that despite the high density of defects in the strontium stannate barrier the observed tunnel magnetoresistance is comparable to tunnel junctions with a better lattice matched SrTiO3 barrier, reaching values of up to 350 % at T = 5 K . Further analysis of the current-voltage characteristics of the junction and the bias voltage dependence of the observed tunnel magnetoresistance show a decrease of the TMR with increasing bias voltage. Our results suggest that by reducing the structural defects in the strontium stannate barrier, even larger TMR ratios might be possible in the future. We gratefully acknowledge financial support via NSF-ECCS Grant No. 1509875.

Triple and Quadruple Junctions Thermophotovoltaic Devices Lattice Matched to InP

Science.gov (United States)

Bhusal, L.; Freundlich, A.

2007-01-01

Thermophotovoltaic (TPV) conversion of IR radiation emanating from a radioisotope heat source is under consideration for deep space exploration. Ideally, for radiator temperatures of interest, the TPV cell must convert efficiently photons in the 0.4-0.7 eV spectral range. Best experimental data for single junction cells are obtained for lattice-mismatched 0.55 eV InGaAs based devices. It was suggested, that a tandem InGaAs based TPV cell made by monolithically combining two or more lattice mismatched InGaAs subcells on InP would result in a sizeable efficiency improvement. However, from a practical standpoint the implementation of more than two subcells with lattice mismatch systems will require extremely thick graded layers (defect filtering systems) to accommodate the lattice mismatch between the sub-cells and could detrimentally affect the recycling of the unused IR energy to the emitter. A buffer structure, consisting of various InPAs layers, is incorporated to accommodate the lattice mismatch between the high and low bandgap subcells. There are evidences that the presence of the buffer structure may generate defects, which could extend down to the underlying InGaAs layer. The unusual large band gap lowering observed in GaAs(1-x)N(x) with low nitrogen fraction [1] has sparked a new interest in the development of dilute nitrogen containing III-V semiconductors for long-wavelength optoelectronic devices (e.g. IR lasers, detector, solar cells) [2-7]. Lattice matched Ga1-yInyNxAs1-x on InP has recently been investigated for the potential use in the mid-infrared device applications [8], and it could be a strong candidate for the applications in TPV devices. This novel quaternary alloy allows the tuning of the band gap from 1.42 eV to below 1 eV on GaAs and band gap as low as 0.6eV when strained to InP, but it has its own limitations. To achieve such a low band gap using the quaternary Ga1-yInyNxAs1-x, either it needs to be strained on InP, which creates further

Time-evolution of photon heat current through series coupled two mesoscopic Josephson junction devices

Science.gov (United States)

Lu, Wen-Ting; Zhao, Hong-Kang; Wang, Jian

2018-03-01

Photon heat current tunneling through a series coupled two mesoscopic Josephson junction (MJJ) system biased by dc voltages has been investigated by employing the nonequilibrium Green’s function approach. The time-oscillating photon heat current is contributed by the superposition of different current branches associated with the frequencies of MJJs ω j (j = 1, 2). Nonlinear behaviors are exhibited to be induced by the self-inductance, Coulomb interaction, and interference effect relating to the coherent transport of Cooper pairs in the MJJs. Time-oscillating pumping photon heat current is generated in the absence of temperature difference, while it becomes zero after time-average. The combination of ω j and Coulomb interactions in the MJJs determines the concrete heat current configuration. As the external and intrinsic frequencies ω j and ω 0 of MJJs match some specific combinations, resonant photon heat current exhibits sinusoidal behaviors with large amplitudes. Symmetric and asymmetric evolutions versus time t with respect to ω 1 t and ω 2 t are controlled by the applied dc voltages of V 1 and V 2. The dc photon heat current formula is a special case of the general time-dependent heat current formula when the bias voltages are settled to zero. The Aharonov-Bohm effect has been investigated, and versatile oscillation structures of photon heat current can be achieved by tuning the magnetic fluxes threading through separating MJJs.

Evaluation of the Electronic Structure of Single-Molecule Junctions Based on Current-Voltage and Thermopower Measurements: Application to C60 Single-Molecule Junction.

Science.gov (United States)

Komoto, Yuki; Isshiki, Yuji; Fujii, Shintaro; Nishino, Tomoaki; Kiguchi, Manabu

2017-02-16

The electronic structure of molecular junctions has a significant impact on their transport properties. Despite the decisive role of the electronic structure, a complete characterization of the electronic structure remains a challenge. This is because there is no straightforward way of measuring electron spectroscopy for an individual molecule trapped in a nanoscale gap between two metal electrodes. Herein, a comprehensive approach to obtain a detailed description of the electronic structure in single-molecule junctions based on the analysis of current-voltage (I-V) and thermoelectric characteristics is described. It is shown that the electronic structure of the prototypical C 60 single-molecule junction can be resolved by analyzing complementary results of the I-V and thermoelectric measurement. This combined approach confirmed that the C 60 single-molecule junction was highly conductive with molecular electronic conductances of 0.033 and 0.003 G 0 and a molecular Seebeck coefficient of -12 μV K -1 . In addition, we revealed that charge transport was mediated by a LUMO whose energy level was located 0.5≈0.6 eV above the Fermi level of the Au electrode. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Critical Josephson current in a model Pb/YBa2Cu3O7-δ junction

International Nuclear Information System (INIS)

Atkinson, W.A.; Carbotte, J.P.

1995-01-01

We consider a simple model for a c-axis Pb/YBa 2 Cu 3 O 7-δ Josephson junction. The observation of a nonzero current in such a junction by Sun et al. [Phys. Rev. Lett. 72, 2267 (1994)] has been taken as evidence against d-wave superconductivity in YBa 2 Cu 3 O 7-δ . We suggest, however, that the pairing interaction in the CuO 2 planes may well be d wave but that the CuO chains destroy the tetragonal symmetry of the system. We examine two ways in which this happens. In a simple model of an incoherent junction, the chains distort the superconducting condensate away from d x 2 -y 2 symmetry. In a specular junction the chains destroy the tetragonal symmetry of the tunneling matrix element. In either case, the loss of tetragonal symmetry results in a finite Josephson current. Our calculated values of the critical current for specular junctions are in good agreement with the results of Sun and co-workers

Stability and controllability of InGaAs/GaAsP wire-on-well (WoW) structure for multi-junction solar cells

Science.gov (United States)

Cho, Hirofumi; Toprasertpong, Kasidit; Sodabanlu, Hassanet; Watanabe, Kentaroh; Sugiyama, Masakazu; Nakano, Yoshiaki

2017-04-01

Wire on Well (WoW) structure embedded in a matrix is naturally formed by growing InxGa1-xAs/GaAs1-yPy strained multiple quantum wells (MQW) on vicinal substrates and employing triethylgallium (TEGa) as a precursor in low-temperature MOVPE. The structure is useful for the subcell in current-matched mult-junction solar cells with lattice-matched materials because of its ability of band-gap tuning. In this research, high density and uniform In0.30Ga0.70As/GaAs0.6P0.4 WoW was obtained up to 200 stacks and its structure was analyzed by X-ray diffraction reciprocal space mapping, atomic force microscopy and scanning transmission electron microscopy. The structure of the wire can be controlled by changing the equivalent layer thicknesses of In0.30Ga0.70As and GaAs0.6P0.4. The photoluminescence peak from the WoW shifted according to the size of InGaAs wires and the intensity was dependent on the accumulation of lattice-mismatch stress.

Josephson junction between two high Tc superconductors with arbitrary transparency of interface

Directory of Open Access Journals (Sweden)

GhR Rashedi

2010-03-01

Full Text Available In this paper, a dc Josephson junction between two singlet superconductors (d-wave and s-wave with arbitrary reflection coefficient has been investigated theoretically. For the case of high Tc superconductors, the c-axes are parallel to an interface with finite transparency and their ab-planes have a mis-orientation. The physics of potential barrier will be demonstrated by a transparency coefficient via which the tunneling will occur. We have solved the nonlocal Eilenberger equations and obtained the corresponding and suitable Green functions analytically. Then, using the obtained Green functions, the current-phase diagrams have been calculated. The effect of the potential barrier and mis-orientation on the currents is studied analytically and numerically. It is observed that, the current phase relations are totally different from the case of ideal transparent Josephson junctions between d-wave superconductors and two s-wave superconductors. This apparatus can be used to demonstrate d-wave order parameter in high Tc superconductors.

AN AERIAL-IMAGE DENSE MATCHING APPROACH BASED ON OPTICAL FLOW FIELD

Directory of Open Access Journals (Sweden)

W. Yuan

2016-06-01

Full Text Available Dense matching plays an important role in many fields, such as DEM (digital evaluation model producing, robot navigation and 3D environment reconstruction. Traditional approaches may meet the demand of accuracy. But the calculation time and out puts density is hardly be accepted. Focus on the matching efficiency and complex terrain surface matching feasibility an aerial image dense matching method based on optical flow field is proposed in this paper. First, some high accurate and uniformed control points are extracted by using the feature based matching method. Then the optical flow is calculated by using these control points, so as to determine the similar region between two images. Second, the optical flow field is interpolated by using the multi-level B-spline interpolation in the similar region and accomplished the pixel by pixel coarse matching. Final, the results related to the coarse matching refinement based on the combined constraint, which recognizes the same points between images. The experimental results have shown that our method can achieve per-pixel dense matching points, the matching accuracy achieves sub-pixel level, and fully meet the three-dimensional reconstruction and automatic generation of DSM-intensive matching’s requirements. The comparison experiments demonstrated that our approach’s matching efficiency is higher than semi-global matching (SGM and Patch-based multi-view stereo matching (PMVS which verifies the feasibility and effectiveness of the algorithm.

Asymmetry in the normal-metal to high-Tc superconductor tunnel junction

International Nuclear Information System (INIS)

Flensberg, K.; Hedegaard, P.; Brix, M.

1988-01-01

We show that the observed asymmetry in the I-V characteristics of high-T c material to normal metal junctions can be explained within the Resonating-Valence-Bond model. For a bias current with electrons moving from the superconductor to the normal metal the current is quadratic in the bias voltage, and in the opposite case with electrons moving from the normal metal to the superconductor the current is linear in V. (orig.)

Multi-service highly sensitive rectifier for enhanced RF energy scavenging.

Science.gov (United States)

Shariati, Negin; Rowe, Wayne S T; Scott, James R; Ghorbani, Kamran

2015-05-07

Due to the growing implications of energy costs and carbon footprints, the need to adopt inexpensive, green energy harvesting strategies are of paramount importance for the long-term conservation of the environment and the global economy. To address this, the feasibility of harvesting low power density ambient RF energy simultaneously from multiple sources is examined. A high efficiency multi-resonant rectifier is proposed, which operates at two frequency bands (478-496 and 852-869 MHz) and exhibits favorable impedance matching over a broad input power range (-40 to -10 dBm). Simulation and experimental results of input reflection coefficient and rectified output power are in excellent agreement, demonstrating the usefulness of this innovative low-power rectification technique. Measurement results indicate an effective efficiency of 54.3%, and an output DC voltage of 772.8 mV is achieved for a multi-tone input power of -10 dBm. Furthermore, the measured output DC power from harvesting RF energy from multiple services concurrently exhibits a 3.14 and 7.24 fold increase over single frequency rectification at 490 and 860 MHz respectively. Therefore, the proposed multi-service highly sensitive rectifier is a promising technique for providing a sustainable energy source for low power applications in urban environments.

Actors with Multi-Headed Message Receive Patterns

DEFF Research Database (Denmark)

Sulzmann, Martin; Lam, Edmund Soon Lee; Van Weert, Peter

2008-01-01

style actors with receive clauses containing multi-headed message patterns. Patterns may be non-linear and constrained by guards. We provide a number of examples to show the usefulness of the extension. We also explore the design space for multi-headed message matching semantics, for example first-match......The actor model provides high-level concurrency abstractions to coordinate simultaneous computations by message passing. Languages implementing the actor model such as Erlang commonly only support single-headed pattern matching over received messages. We propose and design an extension of Erlang...... and rule priority-match semantics. The various semantics are inspired by the multi-set constraint matching semantics found in Constraint Handling Rules. This provides us with a formal model to study actors with multi-headed message receive patterns. The system can be implemented efficiently and we have...

Optimization of the short-circuit current in an InP nanowire array solar cell through opto-electronic modeling.

Science.gov (United States)

Chen, Yang; Kivisaari, Pyry; Pistol, Mats-Erik; Anttu, Nicklas

2016-09-23

InP nanowire arrays with axial p-i-n junctions are promising devices for next-generation photovoltaics, with a demonstrated efficiency of 13.8%. However, the short-circuit current in such arrays does not match their absorption performance. Here, through combined optical and electrical modeling, we study how the absorption of photons and separation of the resulting photogenerated electron-hole pairs define and limit the short-circuit current in the nanowires. We identify how photogenerated minority carriers in the top n segment (i.e. holes) diffuse to the ohmic top contact where they recombine without contributing to the short-circuit current. In our modeling, such contact recombination can lead to a 60% drop in the short-circuit current. To hinder such hole diffusion, we include a gradient doping profile in the n segment to create a front surface barrier. This approach leads to a modest 5% increase in the short-circuit current, limited by Auger recombination with increased doping. A more efficient approach is to switch the n segment to a material with a higher band gap, like GaP. Then, a much smaller number of holes is photogenerated in the n segment, strongly limiting the amount that can diffuse and disappear into the top contact. For a 500 nm long top segment, the GaP approach leads to a 50% higher short-circuit current than with an InP top segment. Such a long top segment could facilitate the fabrication and contacting of nanowire array solar cells. Such design schemes for managing minority carriers could open the door to higher performance in single- and multi-junction nanowire-based solar cells.

Compressive Video Recovery Using Block Match Multi-Frame Motion Estimation Based on Single Pixel Cameras

Directory of Open Access Journals (Sweden)

Sheng Bi

2016-03-01

Full Text Available Compressive sensing (CS theory has opened up new paths for the development of signal processing applications. Based on this theory, a novel single pixel camera architecture has been introduced to overcome the current limitations and challenges of traditional focal plane arrays. However, video quality based on this method is limited by existing acquisition and recovery methods, and the method also suffers from being time-consuming. In this paper, a multi-frame motion estimation algorithm is proposed in CS video to enhance the video quality. The proposed algorithm uses multiple frames to implement motion estimation. Experimental results show that using multi-frame motion estimation can improve the quality of recovered videos. To further reduce the motion estimation time, a block match algorithm is used to process motion estimation. Experiments demonstrate that using the block match algorithm can reduce motion estimation time by 30%.

Doping enhanced barrier lowering in graphene-silicon junctions

Science.gov (United States)

Zhang, Xintong; Zhang, Lining; Chan, Mansun

2016-06-01

Rectifying properties of graphene-semiconductor junctions depend on the Schottky barrier height. We report an enhanced barrier lowering in graphene-Si junction and its essential doping dependence in this paper. The electric field due to ionized charge in n-type Si induces the same type doping in graphene and contributes another Schottky barrier lowering factor on top of the image-force-induced lowering (IFIL). We confirm this graphene-doping-induced lowering (GDIL) based on well reproductions of the measured reverse current of our fabricated graphene-Si junctions by the thermionic emission theory. Excellent matching between the theoretical predictions and the junction data of the doping-concentration dependent barrier lowering serves as another evidence of the GDIL. While both GDIL and IFIL are enhanced with the Si doping, GDIL exceeds IFIL with a threshold doping depending on the as-prepared graphene itself.

Josephson junctions with ferromagnetic interlayer

International Nuclear Information System (INIS)

Wild, Georg Hermann

2012-01-01

We report on the fabrication of superconductor/insulator/ferromagnetic metal/superconductor (Nb/AlO x /Pd 0.82 Ni 0.18 /Nb) Josephson junctions (SIFS JJs) with high critical current densities, large normal resistance times area products, and high quality factors. For these junctions, a transition from 0- to π-coupling is observed for a thickness d F =6 nm of the ferromagnetic Pd 0.82 Ni 0.18 interlayer. The magnetic field dependence of the critical current of the junctions demonstrates good spatial homogeneity of the tunneling barrier and ferromagnetic interlayer. Magnetic characterization shows that the Pd 0.82 Ni 0.18 has an out-of-plane anisotropy and large saturation magnetization indicating negligible dead layers at the interfaces. A careful analysis of Fiske modes up to about 400 GHz provides valuable information on the junction quality factor and the relevant damping mechanisms. Whereas losses due to quasiparticle tunneling dominate at low frequencies, at high frequencies the damping is explained by the finite surface resistance of the junction electrodes. High quality factors of up to 30 around 200 GHz have been achieved. They allow to study the junction dynamics, in particular the switching probability from the zero-voltage into the voltage state with and without microwave irradiation. The experiments with microwave irradiation are well explained within semi-classical models and numerical simulations. In contrast, at mK temperature the switching dynamics without applied microwaves clearly shows secondary quantum effects. Here, we could observe for the first time macroscopic quantum tunneling in Josephson junctions with a ferromagnetic interlayer. This observation excludes fluctuations of the critical current as a consequence of an unstable magnetic domain structure of the ferromagnetic interlayer and affirms the suitability of SIFS Josephson junctions for quantum information processing.

Josephson junctions with ferromagnetic interlayer

Energy Technology Data Exchange (ETDEWEB)

Wild, Georg Hermann

2012-03-04

We report on the fabrication of superconductor/insulator/ferromagnetic metal/superconductor (Nb/AlO{sub x}/Pd{sub 0.82}Ni{sub 0.18}/Nb) Josephson junctions (SIFS JJs) with high critical current densities, large normal resistance times area products, and high quality factors. For these junctions, a transition from 0- to {pi}-coupling is observed for a thickness d{sub F}=6 nm of the ferromagnetic Pd{sub 0.82}Ni{sub 0.18} interlayer. The magnetic field dependence of the critical current of the junctions demonstrates good spatial homogeneity of the tunneling barrier and ferromagnetic interlayer. Magnetic characterization shows that the Pd{sub 0.82}Ni{sub 0.18} has an out-of-plane anisotropy and large saturation magnetization indicating negligible dead layers at the interfaces. A careful analysis of Fiske modes up to about 400 GHz provides valuable information on the junction quality factor and the relevant damping mechanisms. Whereas losses due to quasiparticle tunneling dominate at low frequencies, at high frequencies the damping is explained by the finite surface resistance of the junction electrodes. High quality factors of up to 30 around 200 GHz have been achieved. They allow to study the junction dynamics, in particular the switching probability from the zero-voltage into the voltage state with and without microwave irradiation. The experiments with microwave irradiation are well explained within semi-classical models and numerical simulations. In contrast, at mK temperature the switching dynamics without applied microwaves clearly shows secondary quantum effects. Here, we could observe for the first time macroscopic quantum tunneling in Josephson junctions with a ferromagnetic interlayer. This observation excludes fluctuations of the critical current as a consequence of an unstable magnetic domain structure of the ferromagnetic interlayer and affirms the suitability of SIFS Josephson junctions for quantum information processing.

Enhancing phonon flow through one-dimensional interfaces by impedance matching

Science.gov (United States)

Polanco, Carlos A.; Ghosh, Avik W.

2014-08-01

We extend concepts from microwave engineering to thermal interfaces and explore the principles of impedance matching in 1D. The extension is based on the generalization of acoustic impedance to nonlinear dispersions using the contact broadening matrix Γ(ω), extracted from the phonon self energy. For a single junction, we find that for coherent and incoherent phonons, the optimal thermal conductance occurs when the matching Γ(ω) equals the Geometric Mean of the contact broadenings. This criterion favors the transmission of both low and high frequency phonons by requiring that (1) the low frequency acoustic impedance of the junction matches that of the two contacts by minimizing the sum of interfacial resistances and (2) the cut-off frequency is near the minimum of the two contacts, thereby reducing the spillage of the states into the tunneling regime. For an ultimately scaled single atom/spring junction, the matching criterion transforms to the arithmetic mean for mass and the harmonic mean for spring constant. The matching can be further improved using a composite graded junction with an exponential varying broadening that functions like a broadband antireflection coating. There is, however, a trade off as the increased length of the interface brings in additional intrinsic sources of scattering.

GaAs nanowire array solar cells with axial p-i-n junctions.

Science.gov (United States)

Yao, Maoqing; Huang, Ningfeng; Cong, Sen; Chi, Chun-Yung; Seyedi, M Ashkan; Lin, Yen-Ting; Cao, Yu; Povinelli, Michelle L; Dapkus, P Daniel; Zhou, Chongwu

2014-06-11

Because of unique structural, optical, and electrical properties, solar cells based on semiconductor nanowires are a rapidly evolving scientific enterprise. Various approaches employing III-V nanowires have emerged, among which GaAs, especially, is under intense research and development. Most reported GaAs nanowire solar cells form p-n junctions in the radial direction; however, nanowires using axial junction may enable the attainment of high open circuit voltage (Voc) and integration into multijunction solar cells. Here, we report GaAs nanowire solar cells with axial p-i-n junctions that achieve 7.58% efficiency. Simulations show that axial junctions are more tolerant to doping variation than radial junctions and lead to higher Voc under certain conditions. We further study the effect of wire diameter and junction depth using electrical characterization and cathodoluminescence. The results show that large diameter and shallow junctions are essential for a high extraction efficiency. Our approach opens up great opportunity for future low-cost, high-efficiency photovoltaics.

Maximizing ion current rectification in a bipolar conical nanopore fluidic diode using optimum junction location.

Science.gov (United States)

Singh, Kunwar Pal

2016-10-12

The ion current rectification has been obtained as a function of the location of a heterojunction in a bipolar conical nanopore fluidic diode for different parameters to determine the junction location for maximum ion current rectification using numerical simulations. Forward current peaks for a specific location of the junction and reverse current decreases with the junction location due to a change in ion enrichment/depletion in the pore. The optimum location of the heterojunction shifts towards the tip with base/tip diameter and surface charge density, and towards the base with the electrolyte concentration. The optimum location of the heterojunction has been approximated by an equation as a function of pore length, base/tip diameter, surface charge density and electrolyte concentration. The study is useful to design a rectifier with maximum ion current rectification for practical purposes.

A Single Rod Multi-modality Multi-interface Level Sensor Using an AC Current Source

Directory of Open Access Journals (Sweden)

Abdulgader Hwili

2008-05-01

Full Text Available Crude oil separation is an important process in the oil industry. To make efficient use of the separators, it is important to know their internal behaviour, and to measure the levels of multi-interfaces between different materials, such as gas-foam, foam-oil, oil-emulsion, emulsion-water and water-solids. A single-rod multi-modality multi-interface level sensor is presented, which has a current source, and electromagnetic modalities. Some key issues have been addressed, including the effect of salt content and temperature i.e. conductivity on the measurement.

Micromagnetic modeling of critical current oscillations in magnetic Josephson junctions

NARCIS (Netherlands)

golovchanskiy, I.A.; Bol'ginov, V.V.; Stolyarov, V.S.; Abramov, N.N.; Ben Hamida, A.; Emelyanova, O.V.; Stolyarov, B.S.; Kupriyanov, M..Y.; Golubov, Alexandre Avraamovitch; Ryazanov, V.V.

2016-01-01

In this work we propose and explore an effective numerical approach for investigation of critical current dependence on applied magnetic field for magnetic Josephson junctions with in-plane magnetization orientation. This approach is based on micromagnetic simulation of the magnetization reversal

Response of high Tc superconducting Josephson junction to nuclear radiation

International Nuclear Information System (INIS)

Ding Honglin; Zhang Wanchang; Zhang Xiufeng

1992-10-01

The development of nuclear radiation detectors and research on high T c superconducting nuclear radiation detectors are introduced. The emphases are the principle of using thin-film and thick-film Josephson junctions (bridge junction) based on high T c YBCO superconductors to detect nuclear radiation, the fabrication of thin film and thick-film Josephson junction, and response of junction to low energy gamma-rays of 59.5 keV emitted from 241 Am and beta-rays of 546 keV. The results show that a detector for measuring nuclear radiation spectrum made of high T c superconducting thin-film or thick-film, especially, thick-film Josephson junction, certainly can be developed

Current-induced forces: a new mechanism to induce negative differential resistance and current-switching effect in molecular junctions

Science.gov (United States)

Gu, Lei; Fu, Hua-Hua

2015-12-01

Current-induced forces can excite molecules, polymers and other low-dimensional materials, which in turn leads to an effective gate voltage through Holstein interaction. Here, by taking a short asymmetric DNA junction as an example, and using the Langevin approach, we find that when suppression of charge transport by the effective gate voltage surpasses the current increase from an elevated voltage bias, the current-voltage (I-V) curves display strong negative differential resistance (NDR) and perfect current-switching characteristics. The asymmetric DNA chain differs in mechanical stability under inverse voltages and the I-V curve is asymmetric about inverse biases, which can be used to understand recent transport experiments on DNA chains, and meanwhile provides a new strategy to realize NDR in molecular junctions and other low-dimensional quantum systems.

Current-induced forces: a new mechanism to induce negative differential resistance and current-switching effect in molecular junctions

International Nuclear Information System (INIS)

Gu, Lei; Fu, Hua-Hua

2015-01-01

Current-induced forces can excite molecules, polymers and other low-dimensional materials, which in turn leads to an effective gate voltage through Holstein interaction. Here, by taking a short asymmetric DNA junction as an example, and using the Langevin approach, we find that when suppression of charge transport by the effective gate voltage surpasses the current increase from an elevated voltage bias, the current-voltage (I–V) curves display strong negative differential resistance (NDR) and perfect current-switching characteristics. The asymmetric DNA chain differs in mechanical stability under inverse voltages and the I–V curve is asymmetric about inverse biases, which can be used to understand recent transport experiments on DNA chains, and meanwhile provides a new strategy to realize NDR in molecular junctions and other low-dimensional quantum systems. (paper)

Multi-polar resistance switching and memory effect in copper phthalocyanine junctions

International Nuclear Information System (INIS)

Qiao Shi-Zhu; Kang Shi-Shou; Li Qiang; Zhong Hai; Kang Yun; Yu Shu-Yun; Han Guang-Bing; Yan Shi-Shen; Mei Liang-Mo; Qin Yu-Feng

2014-01-01

Copper phthalocyanine junctions, fabricated by magnetron sputtering and evaporating methods, show multi-polar (unipolar and bipolar) resistance switching and the memory effect. The multi-polar resistance switching has not been observed simultaneously in one organic material before. With both electrodes being cobalt, the unipolar resistance switching is universal. The high resistance state is switched to the low resistance state when the bias reaches the set voltage. Generally, the set voltage increases with the thickness of copper phthalocyanine and decreases with increasing dwell time of bias. Moreover, the low resistance state could be switched to the high resistance state by absorbing the phonon energy. The stability of the low resistance state could be tuned by different electrodes. In Au/copper phthalocyanine/Co system, the low resistance state is far more stable, and the bipolar resistance switching is found. Temperature dependence of electrical transport measurements demonstrates that there are no obvious differences in the electrical transport mechanism before and after the resistance switching. They fit quite well with Mott variable range hopping theory. The effect of Al 2 O 3 on the resistance switching is excluded by control experiments. The holes trapping and detrapping in copper phthalocyanine layer are responsible for the resistance switching, and the interfacial effect between electrodes and copper phthalocyanine layer affects the memory effect. (interdisciplinary physics and related areas of science and technology)

Improved impedance transformation between microwave oscillator and Josephson junction series array

International Nuclear Information System (INIS)

Gutmann, P.; Vollmer, E.; Niemeyer, J.

1993-01-01

Superconducting microwave monolithic integrated circuits (S-MMIC), based on Josephson tunnel junctions, are a well-established tool to reproduce the volt at the highest level of accuracy. An external oscillator of a fixed frequency f supplies microwave energy through a waveguide to the S-MMIC. The wave changes its mode at a waveguide-antipodal finline-stripline taper before entering a series array stripline of up to 30 000 Josephson tunnel junctions and is dissipated as heat in a lossy stripline. Both striplines have a characteristic impedance Z of 2 to 5 Ω. An equivalent circuit is shown in figure 1. The oscillator is matched to the waveguide with a source resistance R G Z(waveguide) ∼ 550 Ω. The most critical part is the taper, which should work as a lossless impedance matching network at the frequency of the oscillator. Microwave energy is fed into the tunnel junctions by the surface current I HF of the travelling wave in the series array stripline producing an rf voltage amplitude U JHF across the capacitance C of each junction. The Josephson tunnel junctions work as self-oscillating parametric mixers producing steps of constant voltage V in the current-voltage characteristic whenever (nf - 2eV/h) = 0, with n denoting an integer and e and h denoting the elementary charge and Planck's constant, respectively. The equivalent circuit of a Josephson tunnel element used in a voltage standard for 1 V working at a frequency of f = 70 GHz is given by a lumped parallel resonant circuit with a nonlinear inductance on the order of L = φ 0 /2πI 0 ∼ 1 pH, flux quantum φ 0 = h/2e and a linear capacitance of C ∼ 40 pF. These tunnel junctions have a maximum zero voltage current of approximately I 0 ∼ 350 μA. (orig.)

Deep-blue efficient OLED based on NPB with little efficiency roll-off under high current density

Science.gov (United States)

Liu, Jian

2017-03-01

NPB usually is used as a hole-transport layer in OLED. In fact, it is a standard pure blue-emission material. However, its light-emitting efficiency in OLED is low due to emissive nature of organic material. Herein, a deep-blue OLDE based on NPB was fabricated. The light-emitting efficiency of the device demonstrates a moderate value, and efficiency roll-off is little under high current density. The device demonstrates that the electroplex's emission decreases with increasing electric field intensity.

High-performance DC SQUIDs with submicrometer niobium Josephson junctions

Energy Technology Data Exchange (ETDEWEB)

de Waal, V.J.; Klapwijk, T.M.; van den Hamer, P.

1983-11-01

We report on the fabrication and performance of low-noise, all-niobium, thin-film planar dc SQUIDs with submicrometer Josephson junctions. The junctions are evaporated obliquely through a metal shadow evaporation mask, which is made using optical lithography with 0.5 ..mu..m tolerance. The Josephson junction barrier is formed by evaporating a thin silicon film and with a subsequent oxidation in a glow discharge. The junction parameters can be reproduced within a factor of two. Typical critical currents of the SQUIDs are about 3 ..mu..A and the resistances are about 100 ..cap omega... With SQUIDs having an inductance of 1 nH the voltage modulation is a least 60 ..mu..V. An intrinsic energy resolution of 4 x 10/sup -32/ J/Hz has been reached. The SQUIDs are coupled to wire-wound input coils or with thin-film input coils. The thin-film input coil consists of a niobium spiral of 20 turns on a separate substrate. In both cases the coil is glued onto a 2-nH SQUID with a coupling efficiency of at least 0.5. Referred to the thin-film input coil, the best coupled energy resolution achieved is 1.2 x 10/sup -30/ J/Hz measured in a flux-locked loop at frequencies above 10 Hz. As far as we know, this is the best figure achieved with an all-refractory-metal thin-film SQUID. The fabrication technique used is suited for making circuits with SQUID and pickup coil on the same substrate. We describe a compact, planar, first-order gradiometer integrated with a SQUID on a single substrate. The gradient noise of this device is 3 x 10/sup -12/ Tm/sup -1/. The gradiometer has a size of 12 mm x 17 mm, is simple to fabricate, an is suitable for biomedical applications.

High-performance dc SQUIDs with submicrometer niobium Josephson junctions

Science.gov (United States)

de Waal, V. J.; Klapwijk, T. M.; van den Hamer, P.

1983-11-01

We report on the fabrication and performance of low-noise, all-niobium, thin-film planar dc SQUIDs with submicrometer Josephson junctions. The junctions are evaporated obliquely through a metal shadow evaporation mask, which is made using optical lithography with 0.5 µm tolerance. The Josephson junction barrier is formed by evaporating a thin silicon film and with a subsequent oxidation in a glow discharge. The junction parameters can be reproduced within a factor of two. Typical critical currents of the SQUIDs are about 3 µA and the resistances are about 100 Ω. With SQUIDs having an inductance of 1 nH the voltage modulation is at least 60 µV. An intrinsic energy resolution of 4×10-32 J/Hz has been reached. The SQUIDs are coupled to wire-wound input coils or with thin-film input coils. The thin-film input coil consists of a niobium spiral of 20 turns on a separate substrate. In both cases the coil is glued onto a 2-nH SQUID with a coupling efficiency of at least 0.5. Referred to the thin-film input coil, the best coupled energy resolution achieved is 1.2×10-30 J/Hz measured in a flux-locked loop at frequencies above 10 Hz. As far as we know, this is the best figure achieved with an all-refractory-metal thin-film SQUID. The fabrication technique used is suited for making circuits with SQUID and pickup coil on the same substrate. We describe a compact, planar, first-order gradiometer integrated with a SQUID on a single substrate. The gradient noise of this device is 3×10-12 T m-1. The gradiometer has a size of 12 mm×17 mm, is simple to fabricate, and is suitable for biomedical applications.

Dynamics of pi-junction interferometer circuits

DEFF Research Database (Denmark)

Kornkev, V.K.; Mozhaev, P.B.; Borisenko, I.V.

2002-01-01

The pi-junction superconducting circuit dynamics was studied by means of numerical simulation technique. Parallel arrays consisting of Josephson junctions of both 0- and pi-type were studied as a model of high-T-c grain-boundary Josephson junction. The array dynamics and the critical current depe...

Onset of chaos and dc current-voltage characteristics of rf-driven Josephson junctions in the low-frequency regime

International Nuclear Information System (INIS)

Chi, C.C.; Vanneste, C.

1990-01-01

A comprehensive picture of the dc current-voltage (I-V) characteristics of rf-driven Josephson junctions in the low-frequency regime is presented. The boundary of the low-frequency regime is roughly defined by the junction characteristic frequency for overdamped junctions, and by the inverse of the junction damping time for underdamped junctions. An adiabatic model valid for the low-frequency regime is used to describe the overall shapes of the I-V curves, which is in good agreement with both the numerical simulations and the experimental results. For underdamped junctions, the Shapiro steps are the prominent features on the I-V curves if the rf frequency is sufficiently below the boundary. As the rf frequency is increased towards the boundary, large negatively-going tails on top of the Shapiro steps are observed both experimentally and numerically. Numerical simulations using the resistively- and capacitively-shunted-junction model (RCSJ model) reveal that the negatively-going tail is a signature of the low-frequency boundary of the junction chaotic regime. With use of the adiabatic model and the existence of plasma oscillations for underdamped junctions, the onset of chaos and its effect on the Shapiro steps can be fully explained. The high-frequency limit of the adiabatic model and the chaotic behavior of the Josephson junctions beyond the low-frequency regime are also briefly discussed

Towards a Next-Generation Catalogue Cross-Match Service

Science.gov (United States)

Pineau, F.; Boch, T.; Derriere, S.; Arches Consortium

2015-09-01

We have been developing in the past several catalogue cross-match tools. On one hand the CDS XMatch service (Pineau et al. 2011), able to perform basic but very efficient cross-matches, scalable to the largest catalogues on a single regular server. On the other hand, as part of the European project ARCHES1, we have been developing a generic and flexible tool which performs potentially complex multi-catalogue cross-matches and which computes probabilities of association based on a novel statistical framework. Although the two approaches have been managed so far as different tracks, the need for next generation cross-match services dealing with both efficiency and complexity is becoming pressing with forthcoming projects which will produce huge high quality catalogues. We are addressing this challenge which is both theoretical and technical. In ARCHES we generalize to N catalogues the candidate selection criteria - based on the chi-square distribution - described in Pineau et al. (2011). We formulate and test a number of Bayesian hypothesis which necessarily increases dramatically with the number of catalogues. To assign a probability to each hypotheses, we rely on estimated priors which account for local densities of sources. We validated our developments by comparing the theoretical curves we derived with the results of Monte-Carlo simulations. The current prototype is able to take into account heterogeneous positional errors, object extension and proper motion. The technical complexity is managed by OO programming design patterns and SQL-like functionalities. Large tasks are split into smaller independent pieces for scalability. Performances are achieved resorting to multi-threading, sequential reads and several tree data-structures. In addition to kd-trees, we account for heterogeneous positional errors and object's extension using M-trees. Proper-motions are supported using a modified M-tree we developed, inspired from Time Parametrized R-trees (TPR

The Effectiveness Evaluation among Different Player-Matching Mechanisms in a Multi-Player Quiz Game

Science.gov (United States)

Tsai, Fu-Hsing

2016-01-01

This study aims to investigate whether different player-matching mechanisms in educational multi-player online games (MOGs) can affect students' learning performance, enjoyment perception and gaming behaviors. Based on the multi-player quiz game, TRIS-Q, developed by Tsai, Tsai and Lin (2015) using a free player-matching (FPM) mechanism, the same…

InP tunnel junctions for InP/InGaAs tandem solar cells

Science.gov (United States)

Vilela, Mauro F.; Freundlich, Alex; Renaud, P.; Medelci, N.; Bensaoula, A.

1996-01-01

We report, for the first time, an epitaxially grown InP p(+)/n(++) tunnel junction. A diode with peak current densities up to 1600 A/cm and maximum specific resistivities (Vp/Ip - peak voltage to peak current ratio) in the range of 10(exp -4)Omega cm(exp 2) is obtained. This peak current density is comparable to the highest results previously reported for lattice matched In(0.53)Ga(0.47)As tunnel junctions. Both results were obtained using chemical beam epitaxy (CBE). In this paper we discuss the electrical characteristics of these tunnel diodes and how the growth conditions influence them.

Note: Photoluminescence measurement system for multi-junction solar cells.

Science.gov (United States)

Trespidi, F; Malchiodi, A; Farina, F

2017-05-01

We describe a photoluminescence spectroscopy system developed for studying phenomena of optical coupling in multiple-junction solar cells and processed/unprocessed wafers, under the high solar concentration levels typical of HCPV (High Concentration PhotoVoltaic) systems. The instrument operates at room temperature over two spectral ranges: 475 nm-1100 nm and 950 nm-1650 nm. Power densities exceeding 10 000 suns can be obtained on the sample. The system can host up to four compact focusable solid state laser sources, presently only three are mounted and operated at 450 nm, 520 nm, and 785 nm; they provide overlapped beams on the sample surface and can shine simultaneously the sample to study possible mutual interaction between the different junctions.

Mixture distribution in a multi-valve twin-spark ignition engine equipped with high-pressure multi-hole injectors

International Nuclear Information System (INIS)

Mitroglou, N; Arcoumanis, C; Mori, K; Motoyama, Y

2006-01-01

Laser-induced fluorescence has been mainly used to characterise the two-dimensional fuel vapour concentration inside the cylinder of a multi-valve twin-spark ignition engine equipped with high-pressure multi-hole injectors. The effects of injection timing, in-cylinder charge motion and injector tip layout have been quantified. The flexibility in nozzle design of the multi-hole injectors has proven to be a powerful tool in terms of matching overall spray cone angle and number of holes to specific engine configurations. Injection timing was found to control spray impingement on the piston and cylinder wall, thus contributing to quick and efficient fuel evaporation. It was confirmed that in-cylinder charge motion plays a major role in engine's stable operation by assisting in the transportation of the air-fuel mixture towards the ignition locations (i.e. spark-plugs) in the way of a uniformly distributed charge or by preserving stratification of the charge depending on operating mode of the engine

Multi-Service Highly Sensitive Rectifier for Enhanced RF Energy Scavenging

Science.gov (United States)

Shariati, Negin; Rowe, Wayne S. T.; Scott, James R.; Ghorbani, Kamran

2015-01-01

Due to the growing implications of energy costs and carbon footprints, the need to adopt inexpensive, green energy harvesting strategies are of paramount importance for the long-term conservation of the environment and the global economy. To address this, the feasibility of harvesting low power density ambient RF energy simultaneously from multiple sources is examined. A high efficiency multi-resonant rectifier is proposed, which operates at two frequency bands (478–496 and 852–869 MHz) and exhibits favorable impedance matching over a broad input power range (−40 to −10 dBm). Simulation and experimental results of input reflection coefficient and rectified output power are in excellent agreement, demonstrating the usefulness of this innovative low-power rectification technique. Measurement results indicate an effective efficiency of 54.3%, and an output DC voltage of 772.8 mV is achieved for a multi-tone input power of −10 dBm. Furthermore, the measured output DC power from harvesting RF energy from multiple services concurrently exhibits a 3.14 and 7.24 fold increase over single frequency rectification at 490 and 860 MHz respectively. Therefore, the proposed multi-service highly sensitive rectifier is a promising technique for providing a sustainable energy source for low power applications in urban environments. PMID:25951137

High efficiency double sided solar cells

International Nuclear Information System (INIS)

Seddik, M.M.

1990-06-01

Silicon technology state of the art for single crystalline was given to be limited to less than 20% efficiency. A proposed new form of photovoltaic solar cell of high current high efficiency with double sided structures has been given. The new forms could be n ++ pn ++ or p ++ np ++ double side junctions. The idea of double sided devices could be understood as two solar cells connected back-to-back in parallel electrical connection, in which the current is doubled if the cell is illuminated from both sides by a V-shaped reflector. The cell is mounted to the reflector such that each face is inclined at an angle of 45 deg. C to each side of the reflector. The advantages of the new structure are: a) High power devices. b) Easy to fabricate. c) The cells are used vertically instead of horizontal use of regular solar cell which require large area to install. This is very important in power stations and especially for satellite installation. If the proposal is made real and proved to be experimentally feasible, it would be a new era for photovoltaic solar cells since the proposal has already been extended to even higher currents. The suggested structures could be stated as: n ++ pn ++ Vp ++ np ++ ;n ++ pn ++ Vn ++ pn ++ ORp ++ np ++ Vp ++ np ++ . These types of structures are formed in wedged shape to employ indirect illumination by either parabolic; conic or V-shaped reflectors. The advantages of these new forms are low cost; high power; less in size and space; self concentrating; ... etc. These proposals if it happens to find their ways to be achieved experimentally, I think they will offer a short path to commercial market and would have an incredible impact on solar cell technology and applications. (author). 12 refs, 5 figs

SUBSTANTIATION OF EFFICIENCY OF THE MULTI-PURPOSE CONSTRUCTION MACHINERY IN EARTHWORKS

Directory of Open Access Journals (Sweden)

SOKOLOV I. A.

2015-11-01

Full Text Available Formulation of the problem. Construction of buildings and structures is a complex process, one of the components of which are the processing of digging. The cost structure constructed earthworks, depending on the types of buildings and structures, ranging from three to sixty percent. Currently, excavation work on 98% mechanized. Machines for the production of excavation, are one of the main vehicles by which the comprehensive mechanization of construction. Equipment construction vehicle with high, fast replacement of obsolete equipment with new, highly productive - one of the main ways of increasing the efficiency of excavation in construction. Intensification excavation mainly ensured by improving the organizational and technological measures to ensure efficient use of earthmoving equipment fleet. The current structure of the fleet, each of which can perform only one operation of the production cycle, resulting in the fact that for the implementation of the entire set of works on creation of earthworks necessary to form a set of machines capable to realize them. An alternative is to use a set of machines earth-moving equipment, multi-purpose equipped with 5-10 kinds of changeable working equipment with 20-40 working bodies, which provides all kinds of earthworks single machine. The purpose of the article. Develop a mechanism for technical and economic assessment of the effectiveness of the set of specialized earth-moving machines as compared to earth-moving machines, multi-purpose allows, under specified production parameters, to establish the limits of their effective application. To determine the efficiency of each unit of the considered earth-moving equipment, and further, to form a rational set of machines that can run on time given the amount of work at minimum cost. Conclusions. Systematic approach to the design of complete production process of digging it possible to establish the relationship between technology and feasibility indexes

Efficient Topological Localization Using Global and Local Feature Matching

Directory of Open Access Journals (Sweden)

Junqiu Wang

2013-03-01

Full Text Available We present an efficient vision-based global topological localization approach in which different image features are used in a coarse-to-fine matching framework. Orientation Adjacency Coherence Histogram (OACH, a novel image feature, is proposed to improve the coarse localization. The coarse localization results are taken as inputs for the fine localization which is carried out by matching Harris-Laplace interest points characterized by the SIFT descriptor. The computation of OACHs and interest points is efficient due to the fact that these features are computed in an integrated process. The matching of local features is improved by using approximate nearest neighbor searching technique. We have implemented and tested the localization system in real environments. The experimental results demonstrate that our approach is efficient and reliable in both indoor and outdoor environments. This work has also been compared with previous works. The comparison results show that our approach has better performance with higher correct ratio and lower computational complexity.

High-quality planar high-Tc Josephson junctions

International Nuclear Information System (INIS)

Bergeal, N.; Grison, X.; Lesueur, J.; Faini, G.; Aprili, M.; Contour, J.P.

2005-01-01

Reproducible high-T c Josephson junctions have been made in a rather simple two-step process using ion irradiation. A microbridge (1 to 5 μm wide) is firstly designed by ion irradiating a c-axis-oriented YBa 2 Cu 3 O 7-δ film through a gold mask such as the nonprotected part becomes insulating. A lower T c part is then defined within the bridge by irradiating with a much lower fluence through a narrow slit (20 nm) opened in a standard electronic photoresist. These planar junctions, whose settings can be finely tuned, exhibit reproducible and nearly ideal Josephson characteristics. This process can be used to produce complex Josephson circuits

Background matching and camouflage efficiency predict population density in four-eyed turtle (Sacalia quadriocellata).

Science.gov (United States)

Xiao, Fanrong; Yang, Canchao; Shi, Haitao; Wang, Jichao; Sun, Liang; Lin, Liu

2016-10-01

Background matching is an important way to camouflage and is widespread among animals. In the field, however, few studies have addressed background matching, and there has been no reported camouflage efficiency in freshwater turtles. Background matching and camouflage efficiency of the four-eyed turtle, Sacalia quadriocellata, among three microhabitat sections of Hezonggou stream were investigated by measuring carapace components of CIE L*a*b* (International Commission on Illumination; lightness, red/green and yellow/blue) color space, and scoring camouflage efficiency through the use of humans as predators. The results showed that the color difference (ΔE), lightness difference (ΔL(*)), and chroma difference (Δa(*)b(*)) between carapace and the substrate background in midstream were significantly lower than that upstream and downstream, indicating that the four-eyed turtle carapace color most closely matched the substrate of midstream. In line with these findings, the camouflage efficiency was the best for the turtles that inhabit midstream. These results suggest that the four-eyed turtles may enhance camouflage efficiency by selecting microhabitat that best match their carapace color. This finding may explain the high population density of the four-eyed turtle in the midstream section of Hezonggou stream. To the best of our knowledge, this study is among the first to quantify camouflage of freshwater turtles in the wild, laying the groundwork to further study the function and mechanisms of turtle camouflage. Copyright © 2016. Published by Elsevier B.V.

Automatic Matching of Multi-Source Satellite Images: A Case Study on ZY-1-02C and ETM+

Directory of Open Access Journals (Sweden)

Bo Wang

2017-10-01

Full Text Available The ever-growing number of applications for satellites is being compromised by their poor direct positioning precision. Existing orthoimages, such as enhanced thematic mapper (ETM+ orthoimages, can provide georeferences or improve the geo-referencing accuracy of satellite images, such ZY-1-02C images that have unsatisfactory positioning precision, thus enhancing their processing efficiency and application. In this paper, a feasible image matching approach using multi-source satellite images is proposed on the basis of an experiment carried out with ZY-1-02C Level 1 images and ETM+ orthoimages. The proposed approach overcame differences in rotation angle, scale, and translation between images. The rotation and scale variances were evaluated on the basis of rational polynomial coefficients. The translation vectors were generated after blocking the overall phase correlation. Then, normalized cross-correlation and least-squares matching were applied for matching. Finally, the gross errors of the corresponding points were eliminated by local statistic vectors in a TIN structure. Experimental results showed a matching precision of less than two pixels (root-mean-square error, and comparison results indicated that the proposed method outperforms Scale-Invariant Feature Transform (SIFT, Speeded Up Robust Features (SURF, and Affine-Scale Invariant Feature Transform (A-SIFT in terms of reliability and efficiency.

Optimization of superconductor--normal-metal--superconductor Josephson junctions for high critical-current density

International Nuclear Information System (INIS)

Golub, A.; Horovitz, B.

1994-01-01

The application of superconducting Bi 2 Sr 2 CaCu 2 O 8 and YBa 2 Cu 3 O 7 wires or tapes to electronic devices requires the optimization of the transport properties in Ohmic contacts between the superconductor and the normal metal in the circuit. This paper presents results of tunneling theory in superconductor--normal-metal--superconductor (SNS) junctions, in both pure and dirty limits. We derive expressions for the critical-current density as a function of the normal-metal resistivity in the dirty limit or of the ratio of Fermi velocities and effective masses in the clean limit. In the latter case the critical current increases when the ratio γ of the Fermi velocity in the superconductor to that of the weak link becomes much less than 1 and it also has a local maximum if γ is close to 1. This local maximum is more pronounced if the ratio of effective masses is large. For temperatures well below the critical temperature of the superconductors the model with abrupt pair potential on the SN interfaces is considered and its applicability near the critical temperature is examined

Josephson junctions in high-T/sub c/ superconductors

Science.gov (United States)

Falco, C.M.; Lee, T.W.

1981-01-14

The invention includes a high T/sub c/ Josephson sperconducting junction as well as the method and apparatus which provides the junction by application of a closely controlled and monitored electrical discharge to a microbridge region connecting two portions of a superconducting film.

Empirically Examining the Performance of Approaches to Multi-Level Matching to Study the Effect of School-Level Interventions

Science.gov (United States)

Hallberg, Kelly; Cook, Thomas D.; Figlio, David

2013-01-01

The goal of this paper is to provide guidance for applied education researchers in using multi-level data to study the effects of interventions implemented at the school level. Two primary approaches are currently employed in observational studies of the effect of school-level interventions. One approach employs intact school matching: matching…

High-efficiency p-n junction oxide photoelectrodes for photoelectrochemical water splitting.

Science.gov (United States)

Liu, Zhifeng; Yan, Lu

2016-11-16

Development of all oxide p-n junctions makes a significant advancement in photoelectrode catalysis functional materials. In this article, we report the preparation of TiO 2 nanorod (NR)/Cu 2 O photoanodes via a simple hydrothermal method followed by an electrochemical deposition process. This facile synthesis route can simultaneously achieve uniform TiO 2 NR/Cu 2 O composite nanostructures and obtain varied amounts of Cu 2 O by controlling the deposition time. The photocurrent density of TiO 2 NR/Cu 2 O heterojunction photoanodes enhanced the photocatalytic activity with a photocurrent density of 5.25 mA cm -2 at 1.23 V versus RHE compared to pristine TiO 2 NR photoanodes under the same conditions. It is demonstrated that the presence of Cu 2 O has played an important role in expanding the spectral response region and reducing the photogenerated charge recombination rate. More importantly, the results provide new insights into the performance of all oxide p-n junctions as photoanodes for PEC water splitting.

Low-Cost High-Efficiency Solar Cells with Wafer Bonding and Plasmonic Technologies

Science.gov (United States)

Tanake, Katsuaki

We fabricated a direct-bond interconnected multijunction solar cell, a two-terminal monolithic GaAs/InGaAs dual-junction cell, to demonstrate a proof-of-principle for the viability of direct wafer bonding for solar cell applications. The bonded interface is a metal-free n+GaAs/n +InP tunnel junction with highly conductive Ohmic contact suitable for solar cell applications overcoming the 4% lattice mismatch. The quantum efficiency spectrum for the bonded cell was quite similar to that for each of unbonded GaAs and InGaAs subcells. The bonded dual-junction cell open-circuit voltage was equal to the sum of the unbonded subcell open-circuit voltages, which indicates that the bonding process does not degrade the cell material quality since any generated crystal defects that act as recombination centers would reduce the open-circuit voltage. Also, the bonded interface has no significant carrier recombination rate to reduce the open circuit voltage. Engineered substrates consisting of thin films of InP on Si handle substrates (InP/Si substrates or epitaxial templates) have the potential to significantly reduce the cost and weight of compound semiconductor solar cells relative to those fabricated on bulk InP substrates. InGaAs solar cells on InP have superior performance to Ge cells at photon energies greater than 0.7 eV and the current record efficiency cell for 1 sun illumination was achieved using an InGaP/GaAs/InGaAs triple junction cell design with an InGaAs bottom cell. Thermophotovoltaic (TPV) cells from the InGaAsP-family of III-V materials grown epitaxially on InP substrates would also benefit from such an InP/Si substrate. Additionally, a proposed four-junction solar cell fabricated by joining subcells of InGaAs and InGaAsP grown on InP with subcells of GaAs and AlInGaP grown on GaAs through a wafer-bonded interconnect would enable the independent selection of the subcell band gaps from well developed materials grown on lattice matched substrates. Substitution of

Optically induced bistable states in metal/tunnel-oxide/semiconductor /MTOS/ junctions

Science.gov (United States)

Lai, S. K.; Dressendorfer, P. V.; Ma, T. P.; Barker, R. C.

1981-01-01

A new switching phenomenon in metal-oxide semiconductor tunnel junction has been discovered. With a sufficiently large negative bias applied to the electrode, incident visible light of intensity greater than about 1 microW/sq cm causes the reverse-biased junction to switch from a low-current to a high-current state. It is believed that hot-electron-induced impact ionization provides the positive feedback necessary for switching, and causes the junction to remain in its high-current state after the optical excitation is removed. The junction may be switched back to the low-current state electrically. The basic junction characteristics have been measured, and a simple model for the switching phenomenon has been developed.

Surface Tension of Multi-phase Flow with Multiple Junctions Governed by the Variational Principle

International Nuclear Information System (INIS)

Matsutani, Shigeki; Nakano, Kota; Shinjo, Katsuhiko

2011-01-01

We explore a computational model of an incompressible fluid with a multi-phase field in three-dimensional Euclidean space. By investigating an incompressible fluid with a two-phase field geometrically, we reformulate the expression of the surface tension for the two-phase field found by Lafaurie et al. (J Comput Phys 113:134–147, 1994) as a variational problem related to an infinite dimensional Lie group, the volume-preserving diffeomorphism. The variational principle to the action integral with the surface energy reproduces their Euler equation of the two-phase field with the surface tension. Since the surface energy of multiple interfaces even with singularities is not difficult to be evaluated in general and the variational formulation works for every action integral, the new formulation enables us to extend their expression to that of a multi-phase (N-phase, N ≥ 2) flow and to obtain a novel Euler equation with the surface tension of the multi-phase field. The obtained Euler equation governs the equation for motion of the multi-phase field with different surface tension coefficients without any difficulties for the singularities at multiple junctions. In other words, we unify the theory of multi-phase fields which express low dimensional interface geometry and the theory of the incompressible fluid dynamics on the infinite dimensional geometry as a variational problem. We apply the equation to the contact angle problems at triple junctions. We computed the fluid dynamics for a two-phase field with a wall numerically and show the numerical computational results that for given surface tension coefficients, the contact angles are generated by the surface tension as results of balances of the kinematic energy and the surface energy.

Ohmic contact junction of carbon nanotubes fabricated by in situ electron beam deposition

International Nuclear Information System (INIS)

Wang, Y G; Wang, T H; Lin, X W; Dravid, V P

2006-01-01

We present experimental evidence of in situ fabrication of multi-walled carbon nanotube junctions via electron beam induced deposition. The tip-to-tip interconnection of the nanotubes involves the alignment of two nanotubes via a piezodriven nanomanipulator and nano-welding by electron beam deposition. Hydrocarbon contamination from the pump oil vapour of the vacuum system of the TEM chamber was used as the solder; this is superior to the already available metallic solders because its composition is identical to the carbon nanotube. The hydrocarbon deposition, with perfect wettability, on the nanotubes establishes strong mechanical binding between the two nanotubes to form an integrated structure. Consequently, the nanotubes cross-linked by the hydrocarbon solder produce good electrical and mechanical connections. The joint dimension was determined by the size of the electron beam, which results in a sound junction with well-defined geometry and the smallest junction size obtained so far. In situ electric measurement showed a linear current-voltage property for the multi-walled nanotube junction

High-efficiency toroidal current drive using low-phase-velocity kinetic Alfven waves

International Nuclear Information System (INIS)

Puri, S.

1991-09-01

A method for obtaining efficient current drive in Tokamaks using low-phase-velocity (v ρ = ω/K parallel ∝ 0.1v te ) kinetic Alfen wave is proposed. The wave momentum, imparted primarily to the trapped electrons by Landau damping, is stored as the canonical angular momentum via the Ware pinch. In steady state, collisions restore the pinched electrons to their original phase-space configuration, in the process releasing the stored canonical angular momentum to the background ions and electrons in proportion to the respective collision frequencies. Despite the loss of a part of the original impulse to the plasma ions, well over half the wave momentum is ultimately delivered to the bulk-plasma electrons, resulting in an efficient current drive. A normalized current-drive efficiency γ = R 0 20 > I/P ∝ 2 would be feasible using the subthermal kinetic-Alfen-wave current drive in a Tokamak of reactor parameters. Optimum antenna loading conditions are described. The problem of accessibility is discussed. In an elongated, high-β plasma with a density dependence n e ∝ (1-ρ 2 ) Χn , accessibility is restricted to ρ > or approx. 3/(4A Χn ), where A is the aspect ratio. For current drive at still lower values of ρ, operation in conjunction with fast-wave current drive is suggested. (orig.)

High-performance germanium n+/p junction by nickel-induced dopant activation of implanted phosphorus at low temperature

International Nuclear Information System (INIS)

Huang Wei; Lu Chao; Yu Jue; Wei Jiang-Bin; Chen Chao-Wen; Wang Jian-Yuan; Xu Jian-Fang; Li Cheng; Chen Song-Yan; Lai Hong-Kai; Wang Chen; Liu Chun-Li

2016-01-01

High-performance Ge n + /p junctions were fabricated at a low formation temperature from 325 °C to 400 °C with a metal(nickel)-induced dopant activation technique. The obtained NiGe electroded Ge n + /p junction has a rectification ratio of 5.6× 10 4 and a forward current of 387 A/cm 2 at −1 V bias. The Ni-based metal-induced dopant activation technique is expected to meet the requirement of the shallow junction of Ge MOSFET. (paper)

Visualization of the current density in Josephson junctions with 0- and π-facets

International Nuclear Information System (INIS)

Guerlich, Christian

2010-01-01

With Low-Temperature-Electron-Microscopy (LTSEM) it is possible to analyse the transport properties of solids at low temperatures. In particular it is possible to image the supercurrent density j s in Josephson junctions. This was demonstrated by comparing TTREM-images with calculated values for j s . In this thesis ramp-type Nd 2-x Ce x CuO 4-y /Nb-Josephson-junctions (NCCO/Nb) and Josephson junctions with a ferromagnetic interlayer Nb/Al-Al 2 O 3 /NiCu/Nb, so-called SIFS (superconductor-insulator-ferromagnet-superconductor) Josephson junctions were studied.It was demonstrated that LTSEM provides direct imaging of the sign change of the order parameter in superconductors with d x 2 -y 2 -symmetry. This was a controversial issue over the last decade. A step like variation in the thickness of the F-layer allows the fabrication of linear and annular Josephson junctions with different numbers of 0 and π facets. With the LTSEM 0-, π-, 0-π-, 0-π-0-, 0/2-π-0/2-, 20 x (0-π)- as well as square-shaped-, circular- and annular-Josephson-junctions were studied. It was demonstrated, that these junctions are of good quality and have critical current densities up to 42 A/cm 2 at T=4.2 K, which is a record value for SIFS junctions with a NiCu F-layer so far. By comparing the measurements with simulations a first indication of a semifluxon at the 0-π-boundary was found. (orig.)

Exploiting multi-function Metal-Organic Framework nanocomposite Ag@Zn-TSA as highly efficient immobilization matrixes for sensitive electrochemical biosensing

International Nuclear Information System (INIS)

Dong, Sheying; Zhang, Dandan; Suo, Gaochao; Wei, Wenbo; Huang, Tinglin

2016-01-01

A novel multi-function Metal-Organic Framework composite Ag@Zn-TSA (zinc thiosalicylate, Zn(C_7H_4O_2S), Zn-TSA) was synthesized as highly efficient immobilization matrixes of myoglobin (Mb)/glucose oxidase (GOx) for electrochemical biosensing. The electrochemical biosensors based on Ag@Zn-TSA composite and ionic liquid (IL) modified carbon paste electrode (CPE) were fabricated successfully. Furthermore, the properties of the sensors were discussed by cyclic voltammetry (CV), electrochemical impedance spectroscopy (EIS) and amperometric current-time curve, respectively. The results showed the proposed biosensors had wide linear response to hydrogen peroxide (H_2O_2) in the range of 0.3–20,000 μM, to nitrite (NO_2"−) for 1.3 μM–1660 μM and 2262 μM–1,33,000 μM, to glucose for 2.0–1022 μM, with a low detection limit of 0.08 μM for H_2O_2, 0.5 μM for NO_2"−, 0.8 μM for glucose. The values of the apparent heterogeneous electron transfer rate constant (k_s) for Mb and GOx were estimated as 2.05 s"−"1 and 2.45 s"−"1, respectively. Thus, Ag@Zn-TSA was a kind of ideal material as highly efficient immobilization matrixes for sensitive electrochemical biosensing. In addition, this work indicated that MOF nanocomposite had a great potential for constructing wide range of sensing interface. - Highlights: • Novel Ag@Zn-TSA was used as highly efficient immobilization matrixes of Mb/glucose. • We exploited multi-function MOFs for a wide range of electrocatalytic sensing interface. • The proposed biosensors had an excellent catalytic effect on the small molecule (NO_2"−, H_2O_2, glucose).

Van der Waals MoS2/VO2 heterostructure junction with tunable rectifier behavior and efficient photoresponse.

Science.gov (United States)

Oliva, Nicoló; Casu, Emanuele Andrea; Yan, Chen; Krammer, Anna; Rosca, Teodor; Magrez, Arnaud; Stolichnov, Igor; Schueler, Andreas; Martin, Olivier J F; Ionescu, Adrian Mihai

2017-10-27

Junctions between n-type semiconductors of different electron affinity show rectification if the junction is abrupt enough. With the advent of 2D materials, we are able to realize thin van der Waals (vdW) heterostructures based on a large diversity of materials. In parallel, strongly correlated functional oxides have emerged, having the ability to show reversible insulator-to-metal (IMT) phase transition by collapsing their electronic bandgap under a certain external stimulus. Here, we report for the first time the electronic and optoelectronic characterization of ultra-thin n-n heterojunctions fabricated using deterministic assembly of multilayer molybdenum disulphide (MoS 2 ) on a phase transition material, vanadium dioxide (VO 2 ). The vdW MoS 2 /VO 2 heterojunction combines the excellent blocking capability of an n-n junction with a high conductivity in on-state, and it can be turned into a Schottky rectifier at high applied voltage or at temperatures higher than 68 °C, exploiting the metal state of VO 2 . We report tunable diode-like current rectification with a good diode ideality factor of 1.75 and excellent conductance swing of 120 mV/dec. Finally, we demonstrate unique tunable photosensitivity and excellent junction photoresponse in the 500/650 nm wavelength range.

Planar Josephson tunnel junctions in a transverse magnetic field

DEFF Research Database (Denmark)

Monacoa, R.; Aarøe, Morten; Mygind, Jesper

2007-01-01

demagnetization effects imposed by the tunnel barrier and electrodes geometry are important. Measurements of the junction critical current versus magnetic field in planar Nb-based high-quality junctions with different geometry, size, and critical current density show that it is advantageous to use a transverse......Traditionally, since the discovery of the Josephson effect in 1962, the magnetic diffraction pattern of planar Josephson tunnel junctions has been recorded with the field applied in the plane of the junction. Here we discuss the static junction properties in a transverse magnetic field where...

A vacuum sealed high emission current and transmission efficiency carbon nanotube triode

Energy Technology Data Exchange (ETDEWEB)

Di, Yunsong [School of Electronic Science & Engineering, Southeast University, Nanjing 210096 (China); Jiangsu Key Laboratory of Optoelectronic Technology, Nanjing Normal University, Nanjing 210023 (China); Wang, Qilong; Zhang, Xiaobing, E-mail: bell@seu.edu.cn; Lei, Wei; Du, Xiaofei; Yu, Cairu [School of Electronic Science & Engineering, Southeast University, Nanjing 210096 (China)

2016-04-15

A vacuum sealed carbon nanotubes (CNTs) triode with a concave and spoke-shaped Mo grid is presented. Due to the high aperture ratio of the grid, the emission current could be modulated at a relatively high electric field. Totally 75 mA emission current has been obtained from the CNTs cathode with the average applied field by the grid shifting from 8 to 13 V/μm. Whilst with the electron transmission efficiency of the grid over 56%, a remarkable high modulated current electron beam over 42 mA has been collected by the anode. Also contributed by the high aperture ration of the grid, desorbed gas molecules could flow away from the emission area rapidly when the triode has been operated at a relative high emission current, and finally collected by a vacion pump. The working pressure has been maintained at ∼1 × 10{sup −7} Torr, seldom spark phenomena occurred. Nearly perfect I-V curve and corresponding Fowler-Nordheim (FN) plot confirmed the accuracy of the measured data, and the emission current was long term stable and reproducible. Thusly, this kind of triode would be used as a high-power electron source.

High Field Side Lower Hybrid Current Drive Launcher Design for DIII-D

Science.gov (United States)

Wallace, G. M.; Leccacori, R.; Doody, J.; Vieira, R.; Shiraiwa, S.; Wukitch, S. J.; Holcomb, C.; Pinsker, R. I.

2017-10-01

Efficient off-axis current drive scalable to reactors is a key enabling technology for a steady-state tokamak. Simulations of DIII-D discharges have identified high performance scenarios with excellent lower hybrid (LH) wave penetration, single pass absorption and high current drive efficiency. The strategy was to adapt known launching technology utilized in previous experiments on C-Mod (poloidal splitter) and Tore Supra (bi-junction) and remain within power density limits established in JET and Tore Supra. For a 2 MW source power antenna, the launcher consists of 32 toroidal apertures and 4 poloidal rows. The aperture is 60 mm x 5 mm with 1 mm septa and the peak n| | is 2.7+/-0.2 for 90□ phasing. Eight WR187 waveguides are routed from the R-1 port down under the lower cryopump, under the existing divertor, and up the central column with the long waveguide dimension along the vacuum vessel. Above the inner strike point region, each waveguide is twisted to orient the long dimension perpendicular to the vacuum vessel and splits into 4 toroidal apertures via bi-junctions. To protect the waveguide, the inner wall radius will need to increase by 2.5 cm. RF, disruption, and thermal analysis of the latest design will be presented. Work supported by the U.S. Department of Energy, Office of Science, Office of Fusion Energy Sciences, using User Facility DIII-D, under Award Number DE-FC02-04ER54698 and by MIT PSFC cooperative agreement DE-SC0014264.

Analytical description of ballistic spin currents and torques in magnetic tunnel junctions

KAUST Repository

Chshiev, M.; Manchon, Aurelien; Kalitsov, A.; Ryzhanova, N.; Vedyayev, A.; Strelkov, N.; Butler, W. H.; Dieny, B.

2015-01-01

In this work we demonstrate explicit analytical expressions for both charge and spin currents which constitute the 2×2 spinor in magnetic tunnel junctions with noncollinear magnetizations under applied voltage. The calculations have been performed

Low-frequency noise in high-(Tc) superconductor Josephson junctions, SQUIDs, and magnetometers

Science.gov (United States)

Miklich, A. H.

1994-05-01

Design and performance of high-T(sub c) dc superconducting quantum interference devices (SQUID's), junctions that comprise them, and magnetometers made from them are described, with attention to sources of 1/f noise. Biepitaxial junctions are found to have large levels of critical current fluctuations which make them unsuitable for low-noise SQUID's; this suggests a poorly connected interface at the grain boundary junction. SQUID's from bicrystal junctions have levels of critical current noise controllable using bias current reversal techniques which leave the noise white down to frequencies of a few Hz. A SQUID with an energy resolution of 1.5 x 10(exp -30) J Hz(exp -1) at 1 Hz is reported. Magnetometers in which a (9 mm)(exp 2) pickup loop is directly coupled to a SQUID body have achieved field resolutions of 93 fT Hz(exp -1/2) down to frequencies below 1 Hz, improving to 39 fT Hz(exp -1/2) at 1 Hz with the addition of a 50mm-diameter single-turn flux transformer. Poor coupling to pickup loop makes it difficult to satisfy competing goals of high field resolution and small detector size necessary for multichannel biomagnetic imaging. Improved coupling is demonstrated by the use of multiturn-input-coil flux transformers, and a resolution of 35 fT Hz(exp -1/2) in the white noise region is reported with a (10 mm)(exp 2) pickup loop. However, additional 1/f noise from processed multilayer structures in the transformer limits the resolution at 1 Hz to 114 fT Hz(exp -1/2). High-T(sub c) SQUID's exhibit additional 1/f noise when cooled in a nonzero static magnetic field because of additional flux vortices trapped in the film, with the noise power at 1 Hz typically increasing by a factor of 10-20 in a field of 0.05mT (0.5 G). Finally, a SQUID-based voltmeter with a resolution of 9.2 pV Hz(exp -1/2) at 10 Hz (24 pV Hz(exp -1/2) at 1 Hz) is described.

Low-Frequency Noise in High-T Superconductor Josephson Junctions, Squids, and Magnetometers.

Science.gov (United States)

Miklich, Andrew Hostetler

The design and performance of high-T_ {rm c} dc superconducting quantum interference devices (SQUIDs), the junctions that comprise them, and magnetometers made from them are described, with special attention paid to sources of 1/f noise. Biepitaxial junctions are found to have large levels of critical current fluctuations which make them unsuitable for low-noise SQUIDs. This noise suggests a poorly connected interface at the grain boundary junction. SQUIDs from bicrystal junctions, in contrast, have levels of critical current noise that are controllable using bias current reversal techniques which leave the noise white down to frequencies of a few Hz. A SQUID with an energy resolution of 1.5times 10^{-30} J Hz^ {-1} at 1 Hz is reported. Magnetometers in which a (9 mm)^2 pickup loop is directly coupled to a SQUID body have achieved field resolutions of 93 fT Hz^{-1/2} down to frequencies below 1 Hz, improving to 39 fT Hz^{-1/2} at 1 Hz with the addition of a 50 mm-diameter single-turn flux transformer. Although the performance of these devices is sufficient for single -channel biomagnetometry or geophysical studies, their relatively poor coupling to the pickup loop makes it difficult to satisfy the competing goals of high field resolution and small detector size necessary for multichannel biomagnetic imaging. Improved coupling is demonstrated by the use of multiturn-input-coil flux transformers, and a resolution of 35 fT Hz^{-1/2} in the white noise region is reported with a (10 mm) ^2 pickup loop. However, additional 1/f noise from the processed multilayer structures in the transformer limits the resolution at 1 Hz to 114 fT Hz^ {-1/2}. High-T_{ rm c} SQUIDs are shown to exhibit additional 1/f noise when they are cooled in a nonzero static magnetic field because of the additional flux vortices trapped in the film, with the noise power at 1 Hz typically increasing by a factor of 10-20 in a field of 0.05 mT (0.5 G). Finally, a SQUID-based voltmeter with a resolution

Rectification of Current Responds to Incorporation of Fullerenes into Mixed-Monolayers of Alkanethiolates in Tunneling Junctions

NARCIS (Netherlands)

Qiu, Li; Zhang, Yanxi; Krijger, Theodorus; Qiu, Xinkai; van 't Hof, Patrick; Hummelen, Jan; Chiechi, Ryan

2016-01-01

This paper describes the rectification of current through molecular junctions comprising self-assembled monolayers of decanethiolate through the incorporation of C60 fullerene moieties bearing undecanethiol groups in junctions using eutectic Ga–In (EGaIn) and Au conducting probe AFM (CP-AFM)

Effect of the critical current density and the junction size on the leakage current of Nb/Al-AlOx/Nb superconducting tunnel junctions for radiation detection

International Nuclear Information System (INIS)

Joosse, K.; Nakagawa, Hiroshi; Akoh, Hiroshi; Takada, Susumu; Maehata, Keisuke; Ishibashi, Kenji.

1996-01-01

Nb/Al-AlO x /Nb superconducting tunnel junctions (STJ's) designed for X-ray detection have been fabricated. The behavior of the low-temperature subgap leakage current, which severely limits the energy resolution obtained in such devices, is investigated. From trends in the dependence of the leakage currents on the critical current density and the size of the STJ, as well as from the low-temperature current-voltage characteristics, and an analysis of the base electrode surface morphology, it is concluded that physical defects in the barrier region are the most probable cause of the leakage currents. Suggestions are given for optimization of the device processing. (author)

Practical approach to determining charge collected in multi-junction structures due to the ion shunt effect

International Nuclear Information System (INIS)

Brown, A.O.; Bhuva, B.; Kerns, S.E.

1993-01-01

In order to design semiconductor devices so that they are resistant to single event upsets, a designer needs to know how much charge would be collected at various junctions in the semiconductor structure. For over a decade researchers have studied the physics of charge collection in semiconductor structures, focusing primarily on the charge collected between the p and n regions of a pn junction by drift and diffusion effects -- a process called funneling. However, when an energetic ion penetrates more than one pn junction, funneling is not the only charge collection mechanism. Simulations and experiments on multi-junction structures have shown dramatic change in the charge collected when an ion penetrates two pn junctions. This charge transport between two regions of like conductivity that are ''bridged'' together by the ion track is called the ion shunt effect -- an effect investigated and experimentally proven by Hauser, et al. and Knudson, et al. This paper will present the algorithms and results of a computer program used to determine the charge collected on silicon semiconductor transistors due to the ion shunt effect. The program is unique because it is quick and simple to use and because it uses a general algorithm to determine an accurate initial electron-hole pair distribution in the ion track

A diagram retrieval method with multi-label learning

Science.gov (United States)

Fu, Songping; Lu, Xiaoqing; Liu, Lu; Qu, Jingwei; Tang, Zhi

2015-01-01

In recent years, the retrieval of plane geometry figures (PGFs) has attracted increasing attention in the fields of mathematics education and computer science. However, the high cost of matching complex PGF features leads to the low efficiency of most retrieval systems. This paper proposes an indirect classification method based on multi-label learning, which improves retrieval efficiency by reducing the scope of compare operation from the whole database to small candidate groups. Label correlations among PGFs are taken into account for the multi-label classification task. The primitive feature selection for multi-label learning and the feature description of visual geometric elements are conducted individually to match similar PGFs. The experiment results show the competitive performance of the proposed method compared with existing PGF retrieval methods in terms of both time consumption and retrieval quality.

Multi data reservior history matching and uncertainty quantification framework

KAUST Repository

Katterbauer, Klemens

2015-11-26

A multi-data reservoir history matching and uncertainty quantification framework is provided. The framework can utilize multiple data sets such as production, seismic, electromagnetic, gravimetric and surface deformation data for improving the history matching process. The framework can consist of a geological model that is interfaced with a reservoir simulator. The reservoir simulator can interface with seismic, electromagnetic, gravimetric and surface deformation modules to predict the corresponding observations. The observations can then be incorporated into a recursive filter that subsequently updates the model state and parameters distributions, providing a general framework to quantify and eventually reduce with the data, uncertainty in the estimated reservoir state and parameters.

The Written-Pole{sup TM} motor: high efficiency - low start current

Energy Technology Data Exchange (ETDEWEB)

Beck, B. [C.Eng. Precise Power Corp., Bradenton, FL (United States); Friesen, D. [P.E. Manitoba Hydro, Winnipeg (Canada)

2000-07-01

Written-Pole{sup TM} technology is a patented machine technology, which changes the magnetic polarity of the rotor field in a rotating machine, while the machine is operating. The number of poles is thereby changed, resulting in a constant frequency - variable speed machine. When operating as a motor, a Written-Pole machine has inherently low starting current and high operating efficiency. (orig.)

Nonmonotonic temperature dependence of critical current in diffusive d-wave junctions

NARCIS (Netherlands)

Yokoyama, T.; Tanaka, Y.; Golubov, Alexandre Avraamovitch; Asano, Y.

2006-01-01

We study the Josephson effect in D/I/DN/I/D junctions, where I, DN, and D denote an insulator, a diffusive normal metal, and a d-wave superconductor, respectively. The Josephson current is calculated based on the quasiclassical Green's function theory with a general boundary condition for

CHSalign: A Web Server That Builds upon Junction-Explorer and RNAJAG for Pairwise Alignment of RNA Secondary Structures with Coaxial Helical Stacking.

Directory of Open Access Journals (Sweden)

Lei Hua

Full Text Available RNA junctions are important structural elements of RNA molecules. They are formed when three or more helices come together in three-dimensional space. Recent studies have focused on the annotation and prediction of coaxial helical stacking (CHS motifs within junctions. Here we exploit such predictions to develop an efficient alignment tool to handle RNA secondary structures with CHS motifs. Specifically, we build upon our Junction-Explorer software for predicting coaxial stacking and RNAJAG for modelling junction topologies as tree graphs to incorporate constrained tree matching and dynamic programming algorithms into a new method, called CHSalign, for aligning the secondary structures of RNA molecules containing CHS motifs. Thus, CHSalign is intended to be an efficient alignment tool for RNAs containing similar junctions. Experimental results based on thousands of alignments demonstrate that CHSalign can align two RNA secondary structures containing CHS motifs more accurately than other RNA secondary structure alignment tools. CHSalign yields a high score when aligning two RNA secondary structures with similar CHS motifs or helical arrangement patterns, and a low score otherwise. This new method has been implemented in a web server, and the program is also made freely available, at http://bioinformatics.njit.edu/CHSalign/.

High neutronic efficiency, low current targets for accelerator-based BNCT applications

International Nuclear Information System (INIS)

Powell, J.R.; Ludewig, H.; Todosow, M.

1998-01-01

The neutronic efficiency of target/filters for accelerator-based BNCT applications is measured by the proton current required to achieve a desirable neutron current at the treatment port (10 9 n/cm 2 /s). In this paper the authors describe two possible targeyt/filter concepts wihch minimize the required current. Both concepts are based on the Li-7 (p,n)Be-7 reaction. Targets that operate near the threshold energy generate neutrons that are close tothe desired energy for BNCT treatment. Thus, the filter can be extremely thin (∼ 5 cm iron). However, this approach has an extremely low neutron yield (n/p ∼ 1.0(-6)), thus requiring a high proton current. The proposed solutino is to design a target consisting of multiple extremely thin targets (proton energy loss per target ∼ 10 keV), and re-accelerate the protons between each target. Targets operating at ihgher proton energies (∼ 2.5 MeV) have a much higher yield (n/p ∼ 1.0(-4)). However, at these energies the maximum neutron energy is approximately 800 keV, and thus a neutron filter is required to degrade the average neutron energy to the range of interest for BNCT (10--20 keV). A neutron filter consisting of fluorine compounds and iron has been investigated for this case. Typically a proton current of approximately 5 mA is required to generate the desired neutron current at the treatment port. The efficiency of these filter designs can be further increased by incorporating neutron reflectors that are co-axial with the neutron source. These reflectors are made of materials which have high scattering cross sections in the range 0.1--1.0 MeV

Electronic thermometry in tunable tunnel junction

Science.gov (United States)

Maksymovych, Petro

2016-03-15

A tunable tunnel junction thermometry circuit includes a variable width tunnel junction between a test object and a probe. The junction width is varied and a change in thermovoltage across the junction with respect to the change in distance across the junction is determined. Also, a change in biased current with respect to a change in distance across the junction is determined. A temperature gradient across the junction is determined based on a mathematical relationship between the temperature gradient, the change in thermovoltage with respect to distance and the change in biased current with respect to distance. Thermovoltage may be measured by nullifying a thermoelectric tunneling current with an applied voltage supply level. A piezoelectric actuator may modulate the probe, and thus the junction width, to vary thermovoltage and biased current across the junction. Lock-in amplifiers measure the derivatives of the thermovoltage and biased current modulated by varying junction width.

III-V-on-silicon solar cells reaching 33% photoconversion efficiency in two-terminal configuration

Science.gov (United States)

Cariou, Romain; Benick, Jan; Feldmann, Frank; Höhn, Oliver; Hauser, Hubert; Beutel, Paul; Razek, Nasser; Wimplinger, Markus; Bläsi, Benedikt; Lackner, David; Hermle, Martin; Siefer, Gerald; Glunz, Stefan W.; Bett, Andreas W.; Dimroth, Frank

2018-04-01

Silicon dominates the photovoltaic industry but the conversion efficiency of silicon single-junction solar cells is intrinsically constrained to 29.4%, and practically limited to around 27%. It is possible to overcome this limit by combining silicon with high-bandgap materials, such as III-V semiconductors, in a multi-junction device. Significant challenges associated with this material combination have hindered the development of highly efficient III-V/Si solar cells. Here, we demonstrate a III-V/Si cell reaching similar performances to standard III-V/Ge triple-junction solar cells. This device is fabricated using wafer bonding to permanently join a GaInP/GaAs top cell with a silicon bottom cell. The key issues of III-V/Si interface recombination and silicon's weak absorption are addressed using poly-silicon/SiOx passivating contacts and a novel rear-side diffraction grating for the silicon bottom cell. With these combined features, we demonstrate a two-terminal GaInP/GaAs//Si solar cell reaching a 1-sun AM1.5G conversion efficiency of 33.3%.

Effect of quantum noise and tunneling on the fluctuational voltage-current characteristics and the lifetime of the zero-voltage state in Josephson junctions

International Nuclear Information System (INIS)

Mel'nikov, V.I.; Suetoe, A.

1986-01-01

The minima of the potential energy for the dynamical variable phi of a Josephson junction are separated by barriers of height hI/sub c//e, where I/sub c/ is the critical current. At low temperatures, T hΩ/2π (Ω is the Josephson plasma frequency). We consider this problem for high-quality junctions (RCΩ>>1, R and C are the resistance and the capacitance of the junction), accounting for the effect of a Johnson-Nyquist noise and quantum tunneling at the barrier top. With a simplifying assumption, we derive a pair of integral equations containing an energy variable for the steady-state distribution of phi and phi-dot, and solve it by a modification of the Wiener-Hopf method. The result is a formula for the current dependence of the fluctuational voltage, valid for currents I 2 <<1

Selective suppression of high-order harmonics within phase-matched spectral regions.

Science.gov (United States)

Lerner, Gavriel; Diskin, Tzvi; Neufeld, Ofer; Kfir, Ofer; Cohen, Oren

2017-04-01

Phase matching in high-harmonic generation leads to enhancement of multiple harmonics. It is sometimes desired to control the spectral structure within the phase-matched spectral region. We propose a scheme for selective suppression of high-order harmonics within the phase-matched spectral region while weakly influencing the other harmonics. The method is based on addition of phase-mismatched segments within a phase-matched medium. We demonstrate the method numerically in two examples. First, we show that one phase-mismatched segment can significantly suppress harmonic orders 9, 15, and 21. Second, we show that two phase-mismatched segments can efficiently suppress circularly polarized harmonics with one helicity over the other when driven by a bi-circular field. The new method may be useful for various applications, including the generation of highly helical bright attosecond pulses.

Matrix-Inversion-Free Compressed Sensing With Variable Orthogonal Multi-Matching Pursuit Based on Prior Information for ECG Signals.

Science.gov (United States)

Cheng, Yih-Chun; Tsai, Pei-Yun; Huang, Ming-Hao

2016-05-19

Low-complexity compressed sensing (CS) techniques for monitoring electrocardiogram (ECG) signals in wireless body sensor network (WBSN) are presented. The prior probability of ECG sparsity in the wavelet domain is first exploited. Then, variable orthogonal multi-matching pursuit (vOMMP) algorithm that consists of two phases is proposed. In the first phase, orthogonal matching pursuit (OMP) algorithm is adopted to effectively augment the support set with reliable indices and in the second phase, the orthogonal multi-matching pursuit (OMMP) is employed to rescue the missing indices. The reconstruction performance is thus enhanced with the prior information and the vOMMP algorithm. Furthermore, the computation-intensive pseudo-inverse operation is simplified by the matrix-inversion-free (MIF) technique based on QR decomposition. The vOMMP-MIF CS decoder is then implemented in 90 nm CMOS technology. The QR decomposition is accomplished by two systolic arrays working in parallel. The implementation supports three settings for obtaining 40, 44, and 48 coefficients in the sparse vector. From the measurement result, the power consumption is 11.7 mW at 0.9 V and 12 MHz. Compared to prior chip implementations, our design shows good hardware efficiency and is suitable for low-energy applications.

AntiReflection Coating D

International Nuclear Information System (INIS)

AIKEN, DANIEL J.

1999-01-01

Analytical expressions used to optimize AR coatings for single junction solar cells are extended for use in monolithic, series interconnected multi-junction solar cell AR coating design. The result is an analytical expression which relates the solar cell performance (through J(sub sc)) directly to the AR coating design through the device reflectance. It is also illustrated how AR coating design be used to provide an additional degree of freedom for current matching multi-junction devices

High spin-filter efficiency and Seebeck effect through spin-crossover iron–benzene complex

Energy Technology Data Exchange (ETDEWEB)

Yan, Qiang; Zhou, Liping, E-mail: zhoulp@suda.edu.cn; Cheng, Jue-Fei; Wen, Zhongqian; Han, Qin; Wang, Xue-Feng [College of Physics, Optoelectronics and Energy and Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215006 (China)

2016-04-21

Electronic structures and coherent quantum transport properties are explored for spin-crossover molecule iron-benzene Fe(Bz){sub 2} using density functional theory combined with non-equilibrium Green’s function. High- and low-spin states are investigated for two different lead-molecule junctions. It is found that the asymmetrical T-shaped contact junction in the high-spin state behaves as an efficient spin filter while it has a smaller conductivity than that in the low-spin state. Large spin Seebeck effect is also observed in asymmetrical T-shaped junction. Spin-polarized properties are absent in the symmetrical H-shaped junction. These findings strongly suggest that both the electronic and contact configurations play significant roles in molecular devices and metal-benzene complexes are promising materials for spintronics and thermo-spintronics.

Multi-directional program efficiency

DEFF Research Database (Denmark)

Asmild, Mette; Balezentis, Tomas; Hougaard, Jens Leth

2016-01-01

The present paper analyses both managerial and program efficiencies of Lithuanian family farms, in the tradition of Charnes et al. (Manag Sci 27(6):668–697, 1981) but with the important difference that multi-directional efficiency analysis rather than the traditional data envelopment analysis...... approach is used to estimate efficiency. This enables a consideration of input-specific efficiencies. The study shows clear differences between the efficiency scores on the different inputs as well as between the farm types of crop, livestock and mixed farms respectively. We furthermore find that crop...... farms have the highest program efficiency, but the lowest managerial efficiency and that the mixed farms have the lowest program efficiency (yet not the highest managerial efficiency)....

A multi-objective approach for developing national energy efficiency plans

International Nuclear Information System (INIS)

Haydt, Gustavo; Leal, Vítor; Dias, Luís

2014-01-01

This paper proposes a new approach to deal with the problem of building national energy efficiency (EE) plans, considering multiple objectives instead of only energy savings. The objectives considered are minimizing the influence of energy use on climate change, minimizing the financial risk from the investment, maximizing the security of energy supply, minimizing investment costs, minimizing the impacts of building new power plants and transmission infrastructures, and maximizing the local air quality. These were identified through literature review and interaction with real decision makers. A database of measures is established, from which millions of potential EE plans can be built by combining measures and their respective degree of implementation. Finally, a hybrid multi-objective and multi-criteria decision analysis (MCDA) model is proposed to search and select the EE plans that best match the decision makers’ preferences. An illustration of the working mode and the type of results obtained from this novel hybrid model is provided through an application to Portugal. For each of five decision perspectives a wide range of potential best plans were identified. These wide ranges show the relevance of introducing multi-objective analysis in a comprehensive search space as a tool to inform decisions about national EE plans. - Highlights: • A multiple objective approach to aid the choice of national energy efficiency plans. • A hybrid multi-objective MCDA model is proposed to search among the possible plans. • The model identified relevant plans according to five different idealized DMs. • The approach is tested with Portugal

Design and development of a chopping and deflecting system for the high current injector at IUAC

Science.gov (United States)

Kedia, Sanjay Kumar; Mehta, R.

2018-05-01

The Low Energy Beam Transport (LEBT) section of the High Current Injector (HCI) incorporates a Chopping cum Deflecting System (CDS). The CDS comprises of a deflecting system and a pair of slits that will remove dark current and produce time bunched beam of 60 ns at different repetition rates of 4, 2, 1, 0.5, 0.25 and 0.125 MHz. The distinguishing feature of the design is the use of a multi-plate deflecting structure with low capacitance to optimize the electric field, which in turn results in higher efficiency in terms of achievable ion current. To maximize the effective electric field and its uniformity, the gap between the deflecting plates has been varied and a semi-circular contour has been incorporated on the deflecting plates. Due to this the electric field variation is less than ±0.5% within the plate length. The length of deflecting plates was chosen to maximize the transmission efficiency. Since the velocity of the charged particles in the LEBT section is constant, therefore the separation between two successive sets of deflecting plates has been kept constant to match the ions transient time within the gap which is nearly 32 ns. A square pulse has been chosen, instead of a sinusoidal one, to increase the transmission efficiency and to decrease the tailing effect. The loaded capacitance of the structure was kept 90% transmission efficiency with in the bunch length. Various simulation codes like Solid Works, TRACE 3D, CST MWS and homebrew Python codes were used to validate the design.

Coaxial pulse matching transformer

International Nuclear Information System (INIS)

Ledenev, V.V.; Khimenko, L.T.

1986-01-01

This paper describes a coaxial pulse matching transformer with comparatively simple design, increased mechanical strength, and low stray inductance. The transformer design makes it easy to change the turns ratio. The circuit of the device and an expression for the current multiplication factor are presented; experiments confirm the efficiency of the transformer. Apparatus with a coaxial transformer for producing high-power pulsed magnetic fields is designed (current pulses of 1-10 MA into a load and a natural frequency of 100 kHz)

Critical current of high Tc superconducting Bi223/Ag tapes

NARCIS (Netherlands)

Huang, Y.; ten Haken, Bernard; ten Kate, Herman H.J.

1998-01-01

The magnetic field dependence of the critical current of various high Tc superconducting Bi2223/Ag tapes indicates that the transport current is carried through two paths: one is through weakly-linked grain boundaries (Josephson junctions); another is through well-connected grains. The critical

High-Efficiency Amorphous Silicon Alloy Based Solar Cells and Modules; Final Technical Progress Report, 30 May 2002--31 May 2005

Energy Technology Data Exchange (ETDEWEB)

Guha, S.; Yang, J.

2005-10-01

The principal objective of this R&D program is to expand, enhance, and accelerate knowledge and capabilities for development of high-efficiency hydrogenated amorphous silicon (a-Si:H) and amorphous silicon-germanium alloy (a-SiGe:H) related thin-film multijunction solar cells and modules with low manufacturing cost and high reliability. Our strategy has been to use the spectrum-splitting triple-junction structure, a-Si:H/a-SiGe:H/a-SiGe:H, to improve solar cell and module efficiency, stability, and throughput of production. The methodology used to achieve the objectives included: (1) explore the highest stable efficiency using the triple-junction structure deposited using RF glow discharge at a low rate, (2) fabricate the devices at a high deposition rate for high throughput and low cost, and (3) develop an optimized recipe using the R&D batch large-area reactor to help the design and optimization of the roll-to-roll production machines. For short-term goals, we have worked on the improvement of a-Si:H and a-SiGe:H alloy solar cells. a-Si:H and a-SiGe:H are the foundation of current a-Si:H based thin-film photovoltaic technology. Any improvement in cell efficiency, throughput, and cost reduction will immediately improve operation efficiency of our manufacturing plant, allowing us to further expand our production capacity.

Real-time vehicle matching for multi-camera tunnel surveillance

Science.gov (United States)

Jelača, Vedran; Niño Castañeda, Jorge Oswaldo; Frías-Velázquez, Andrés; Pižurica, Aleksandra; Philips, Wilfried

2011-03-01

Tracking multiple vehicles with multiple cameras is a challenging problem of great importance in tunnel surveillance. One of the main challenges is accurate vehicle matching across the cameras with non-overlapping fields of view. Since systems dedicated to this task can contain hundreds of cameras which observe dozens of vehicles each, for a real-time performance computational efficiency is essential. In this paper, we propose a low complexity, yet highly accurate method for vehicle matching using vehicle signatures composed of Radon transform like projection profiles of the vehicle image. The proposed signatures can be calculated by a simple scan-line algorithm, by the camera software itself and transmitted to the central server or to the other cameras in a smart camera environment. The amount of data is drastically reduced compared to the whole image, which relaxes the data link capacity requirements. Experiments on real vehicle images, extracted from video sequences recorded in a tunnel by two distant security cameras, validate our approach.

All-electric-controlled spin current switching in single-molecule magnet-tunnel junctions

Science.gov (United States)

Zhang, Zheng-Zhong; Shen, Rui; Sheng, Li; Wang, Rui-Qiang; Wang, Bai-Gen; Xing, Ding-Yu

2011-04-01

A single-molecule magnet (SMM) coupled to two normal metallic electrodes can both switch spin-up and spin-down electronic currents within two different windows of SMM gate voltage. Such spin current switching in the SMM tunnel junction arises from spin-selected single electron resonant tunneling via the lowest unoccupied molecular orbit of the SMM. Since it is not magnetically controlled but all-electrically controlled, the proposed spin current switching effect may have potential applications in future spintronics.

Highly Efficient Multi Channel Packet Forwarding with Round Robin Intermittent Periodic Transmit for Multihop Wireless Backhaul Networks

Science.gov (United States)

Furukawa, Hiroshi

2017-01-01

Round Robin based Intermittent Periodic Transmit (RR-IPT) has been proposed which achieves highly efficient multi-hop relays in multi-hop wireless backhaul networks (MWBN) where relay nodes are 2-dimensionally deployed. This paper newly investigates multi-channel packet scheduling and forwarding scheme for RR-IPT. Downlink traffic is forwarded by RR-IPT via one of the channels, while uplink traffic and part of downlink are accommodated in the other channel. By comparing IPT and carrier sense multiple access with collision avoidance (CSMA/CA) for uplink/downlink packet forwarding channel, IPT is more effective in reducing packet loss rate whereas CSMA/CA is better in terms of system throughput and packet delay improvement. PMID:29137164

Chaos and multi-scroll attractors in RCL-shunted junction coupled Jerk circuit connected by memristor

Science.gov (United States)

Zhou, Ping; Ahmad, Bashir; Ren, Guodong; Wang, Chunni

2018-01-01

In this paper, a new four-variable dynamical system is proposed to set chaotic circuit composed of memristor and Josephson junction, and the dependence of chaotic behaviors on nonlinearity is investigated. A magnetic flux-controlled memristor is used to couple with the RCL-shunted junction circuit, and the dynamical behaviors can be modulated by changing the coupling intensity between the memristor and the RCL-shunted junction. Bifurcation diagram and Lyapunov exponent are calculated to confirm the emergence of chaos in the improved dynamical system. The outputs and dynamical behaviors can be controlled by the initial setting and external stimulus as well. As a result, chaos can be suppressed and spiking occurs in the sampled outputs under negative feedback, while applying positive feedback type via memristor can be effective to trigger chaos. Furthermore, it is found that the number of multi-attractors in the Jerk circuit can be modulated when memristor coupling is applied on the circuit. These results indicate that memristor coupling can be effective to control chaotic circuits and it is also useful to reproduce dynamical behaviors for neuronal activities. PMID:29342178

Chaos and multi-scroll attractors in RCL-shunted junction coupled Jerk circuit connected by memristor.

Science.gov (United States)

Ma, Jun; Zhou, Ping; Ahmad, Bashir; Ren, Guodong; Wang, Chunni

2018-01-01

In this paper, a new four-variable dynamical system is proposed to set chaotic circuit composed of memristor and Josephson junction, and the dependence of chaotic behaviors on nonlinearity is investigated. A magnetic flux-controlled memristor is used to couple with the RCL-shunted junction circuit, and the dynamical behaviors can be modulated by changing the coupling intensity between the memristor and the RCL-shunted junction. Bifurcation diagram and Lyapunov exponent are calculated to confirm the emergence of chaos in the improved dynamical system. The outputs and dynamical behaviors can be controlled by the initial setting and external stimulus as well. As a result, chaos can be suppressed and spiking occurs in the sampled outputs under negative feedback, while applying positive feedback type via memristor can be effective to trigger chaos. Furthermore, it is found that the number of multi-attractors in the Jerk circuit can be modulated when memristor coupling is applied on the circuit. These results indicate that memristor coupling can be effective to control chaotic circuits and it is also useful to reproduce dynamical behaviors for neuronal activities.

Axial p-n junction and space charge limited current in single GaN nanowire

Science.gov (United States)

Fang, Zhihua; Donatini, Fabrice; Daudin, Bruno; Pernot, Julien

2018-01-01

The electrical characterizations of individual basic GaN nanostructures, such as axial nanowire (NW) p-n junctions, are becoming indispensable and crucial for the fully controlled realization of GaN NW based devices. In this study, electron beam induced current (EBIC) measurements were performed on two single axial GaN p-n junction NWs grown by plasma-assisted molecular beam epitaxy. I-V characteristics revealed that both ohmic and space charge limited current (SCLC) regimes occur in GaN p-n junction NW. Thanks to an improved contact process, both the electric field induced by the p-n junction and the SCLC in the p-part of GaN NW were disclosed and delineated by EBIC signals under different biases. Analyzing the EBIC profiles in the vicinity of the p-n junction under 0 V and reverse bias, we deduced a depletion width in the range of 116-125 nm. Following our previous work, the acceptor N a doping level was estimated to be 2-3 × 1017 at cm-3 assuming a donor level N d of 2-3 × 1018 at cm-3. The hole diffusion length in n-GaN was determined to be 75 nm for NW #1 and 43 nm for NW #2, demonstrating a low surface recombination velocity at the m-plane facet of n-GaN NW. Under forward bias, EBIC imaging visualized the electric field induced by the SCLC close to p-side contact, in agreement with unusual SCLC previously reported in GaN NWs.

Axial p-n junction and space charge limited current in single GaN nanowire.

Science.gov (United States)

Fang, Zhihua; Donatini, Fabrice; Daudin, Bruno; Pernot, Julien

2018-01-05

The electrical characterizations of individual basic GaN nanostructures, such as axial nanowire (NW) p-n junctions, are becoming indispensable and crucial for the fully controlled realization of GaN NW based devices. In this study, electron beam induced current (EBIC) measurements were performed on two single axial GaN p-n junction NWs grown by plasma-assisted molecular beam epitaxy. I-V characteristics revealed that both ohmic and space charge limited current (SCLC) regimes occur in GaN p-n junction NW. Thanks to an improved contact process, both the electric field induced by the p-n junction and the SCLC in the p-part of GaN NW were disclosed and delineated by EBIC signals under different biases. Analyzing the EBIC profiles in the vicinity of the p-n junction under 0 V and reverse bias, we deduced a depletion width in the range of 116-125 nm. Following our previous work, the acceptor N a doping level was estimated to be 2-3 × 10 17 at cm -3 assuming a donor level N d of 2-3 × 10 18 at cm -3 . The hole diffusion length in n-GaN was determined to be 75 nm for NW #1 and 43 nm for NW #2, demonstrating a low surface recombination velocity at the m-plane facet of n-GaN NW. Under forward bias, EBIC imaging visualized the electric field induced by the SCLC close to p-side contact, in agreement with unusual SCLC previously reported in GaN NWs.

Performance enhancement of III–V multi-junction solar cells using indium-tin-oxide electrodes

Energy Technology Data Exchange (ETDEWEB)

Kao, Yu-Cheng [Graduate Institute of Precision Engineering, National Chung Hsing University, Taichung 402, Taiwan (China); Ou, Sin-Liang [Department of Materials Science and Engineering, Da-Yeh University, Changhua 515, Taiwan (China); Wu, Fan-Lei [Graduate Institute of Precision Engineering, National Chung Hsing University, Taichung 402, Taiwan (China); Horng, Ray-Hua, E-mail: rhh@nctu.edu.tw [Graduate Institute of Precision Engineering, National Chung Hsing University, Taichung 402, Taiwan (China); Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300, Taiwan (China)

2016-08-01

InGaP/GaAs dual-junction solar cells were prepared on p-type GaAs substrates by metalorganic chemical vapor deposition. Three types of front-side electrodes, which included AuGe/Au metal-finger, ITO-finger, and ITO-overcoated, were individually fabricated on the devices and denoted as samples A, B, and C, respectively. The thickness of ITO film is 200 nm, and its transmittance can reach 99% in the visible region. Based on the current density-voltage (J-V) measurement, the short-circuit current density (J{sub sc}) of samples A, B, and C are 8.13, 9.35, and 10.90 mA/cm{sup 2}, while the conversion efficiencies of these three samples are evaluated to be 15.45%, 18.14%, and 20.24%, respectively. This reveals that sample C possesses 31.0% enhancement in the conversion efficiency compared to that of sample A. Additionally, the series resistances (Rs) of samples A, B, and C are 21.43, 22.94, and 6.71 Ω-cm{sup 2}, respectively. The lowest Rs occurred in sample C can be attributed to the elimination of the lateral resistance between electrodes because this device was fabricated with the ITO-overcoated front-side electrode. In sample C, since the ITO front-side electrode can cover overall surface of the device, all regions on the sample surface can extract the electrons, leading to the highest J{sub sc}. - Highlights: • The InGaP/GaAs dual-junction solar cells were prepared on p-type GaAs substrates. • The device was prepared with an ITO-overcoat electrode directly on the n{sup +}-GaAs layer. • This cell has 31.0% enhancement in the η compared to that with an AuGe/Au electrode. • This device possesses the lowest R{sub s} of 6.71 Ω-cm{sup 2} owing to the elimination of R{sub L}. • ITO-overcoat electrode acts a dual role both as the TCL and an anti-reflection layer.

Coherence in a transmon qubit with epitaxial tunnel junctions

Energy Technology Data Exchange (ETDEWEB)

Weides, Martin [National Institute of Standards and Technology, Boulder, Colorado 80305 (United States); Karlsruhe Institute of Technology (Germany); Kline, Jeffrey; Vissers, Michael; Sandberg, Martin; Pappas, David [National Institute of Standards and Technology, Boulder, Colorado 80305 (United States); Wisbey, David [National Institute of Standards and Technology, Boulder, Colorado 80305 (United States); Saint Louis University, St. Louis, Missouri 63103 (United States); Johnson, Blake; Ohki, Thomas [Raytheon BBN Technologies, Cambridge, Massachusetts 02138 (United States)

2012-07-01

Transmon qubits based on epitaxial tunnel junctions and interdigitated capacitors were developed. This multileveled qubit, patterned by use of all-optical lithography, is a step towards scalable qubits with a high integration density. The relaxation time T{sub 1} is.72-.86 {mu} sec and the ensemble dephasing time T{sub 2}{sup *} is slightly larger than T{sub 1}. The dephasing time T{sub 2} (1.36 {mu} sec) is nearly energy-relaxation-limited. Qubit spectroscopy yields weaker level splitting than observed in qubits with amorphous barriers in equivalent-size junctions. The qubit's inferred microwave loss closely matches the weighted losses of the individual elements (junction, wiring dielectric, and interdigitated capacitor), determined by independent resonator measurements.

LINE-BASED MULTI-IMAGE MATCHING FOR FAÇADE RECONSTRUCTION

Directory of Open Access Journals (Sweden)

T. A. Teo

2012-07-01

Full Text Available This research integrates existing LOD 2 building models and multiple close-range images for façade structural lines extraction. The major works are orientation determination and multiple image matching. In the orientation determination, Speeded Up Robust Features (SURF is applied to extract tie points automatically. Then, tie points and control points are combined for block adjustment. An object-based multi-images matching is proposed to extract the façade structural lines. The 2D lines in image space are extracted by Canny operator followed by Hough transform. The role of LOD 2 building models is to correct the tilt displacement of image from different views. The wall of LOD 2 model is also used to generate hypothesis planes for similarity measurement. Finally, average normalized cross correlation is calculated to obtain the best location in object space. The test images are acquired by a nonmetric camera Nikon D2X. The total number of image is 33. The experimental results indicate that the accuracy of orientation determination is about 1 pixel from 2515 tie points and 4 control points. It also indicates that line-based matching is more flexible than point-based matching.

Tunnel currents produced by defects in p-n junctions of GaAs grown on vapor phase

International Nuclear Information System (INIS)

Barrales Guadarrama, V R; Rodríguez Rodriguez, E M; Barrales Guadarrama, R; Reyes Ayala, N

2017-01-01

With the purpose of assessing if the epitaxy on vapor phase technique “Close Space Vapor Deposition (CSVT)” is capable of produce thin films with adequate properties in order to manufacture p-n junctions, a study of invert and direct current was developed, in a temperature range of 94K to 293K, to junctions p-n of GaAs grown through the technique CSVT. It is shown that the dominant current, within the range 10 -7 to 10 -2 A, is consistent with a currents model of the type of internal emission form field, which shows these currents are due to the presence of localized states in the band gap. (paper)

Effect of exciton pairing on the stationary Josephson current in superconductor-semimetal-superconductor junctions

International Nuclear Information System (INIS)

Itskovich, I.F.; Shekhter, R.I.

1983-01-01

The effect of exciton pairing of charge carriers in a semimetal on the stationary Josephson current in superconductor-semimetal-superconductor junctions is considered. It is shown that the phase transition of the semimetal interlayer into an exciton dielectric state for T/sub γ/< T/sub c/ (T/sub γ/, T/sub c/ are the superconducting and exciton transition temperatures, respectively) is accompanied by a kink on the critical current j/sub c/ versus temperature curve at the point T = T/sub γ/. A sharp nonmonotonic temperature dependence of the reduced current j/sub c//j/sub c/0 (j/sub c/0 is the critical current at T/sub γ/ = 0) is also possible in the range T< T/sub γ/. At low temperatures T<< v/sub 1,2//d<< T/sub γ/ (v/sub 1,2/ are the Fermi velocities of the carriers in the semimetal, d is the thickness of the interlayer) the critical current of the superconductor-semimetal-superconductor junction is exponentially smaller than the current in the absence of exciton pairing

Phase dynamics of a Josephson junction ladder driven by modulated currents

International Nuclear Information System (INIS)

Kawaguchi, T.

2011-01-01

Phase dynamics of disordered Josephson junction ladders (JJLs) driven by external currents which are spatially and temporally modulated is studied using a numerical simulation based on a random field XY model. This model is considered theoretically as an effective model of JJLs with structural disorder in a magnetic field. The spatiotemporal modulation of external currents causes peculiar dynamical effects of phases in the system under certain conditions, such as the directed motion of phases and the mode-locking in the absence of dc currents. We clarify the details of effects of the spatiotemporal modulation on the phase dynamics.

High efficiency 4H-SiC betavoltaic power sources using tritium radioisotopes

Energy Technology Data Exchange (ETDEWEB)

Thomas, Christopher; Portnoff, Samuel [Widetronix Corp., Ithaca, New York 14850 (United States); Spencer, M. G. [Department of Electrical and Computer Engineering, Cornell University, Ithaca, New York 14850 (United States)

2016-01-04

Realization of an 18.6% efficient 4H-silicon carbide (4H-SiC) large area betavoltaic power source using the radioisotope tritium is reported. A 200 nm 4H-SiC P{sup +}N junction is used to collect high-energy electrons. The electron source is a titanium tritide (TiH{sup 3}{sub x}) foil, or an integrated titanium tritide region formed by the diffusion of tritium into titanium. The specific activity of the source is directly measured. Dark current measured under short circuit conditions was less than 6.1 pA/cm{sup 2}. Samples measured with an external tritium foil produced an open circuit voltage of 2.09 V, short circuit current of 75.47 nA/cm{sup 2}, fill factor of 0.86, and power efficiency of 18.6%. Samples measured with an integrated source produced power efficiencies of 12%. Simulations were done to determine the beta spectrum (modified by self absorption) exiting the source and the electron hole pair generation function in the 4H-SiC. The electron-hole pair generation function in 4H-SiC was modeled as a Gaussian distribution, and a closed form solution of the continuity equation was used to analyze the cell performance. The effective surface recombination velocity in our samples was found to be 10{sup 5}–10{sup 6 }cm/s. Our analysis demonstrated that the surface recombination dominates the performance of a tritium betavoltaic device but that using a thin P{sup +}N junction structure can mitigate some of the negative effects.

Multi-Criterion Two-Sided Matching of Public–Private Partnership Infrastructure Projects: Criteria and Methods

Directory of Open Access Journals (Sweden)

Ru Liang

2018-04-01

Full Text Available Two kinds of evaluative criteria are associated with Public–Private Partnership (PPP infrastructure projects, i.e., private evaluative criteria and public evaluative criteria. These evaluative criteria are inversely related, that is, the higher the public benefits; the lower the private surplus. To balance evaluative criteria in the Two-Sided Matching (TSM decision, this paper develops a quantitative matching decision model to select an optimal matching scheme for PPP infrastructure projects based on the Hesitant Fuzzy Set (HFS under unknown evaluative criterion weights. In the model, HFS is introduced to describe values of the evaluative criteria and multi-criterion information is fully considered given by groups. The optimal model is built and solved by maximizing the whole deviation of each criterion so that the evaluative criterion weights are determined objectively. Then, the match-degree of the two sides is calculated and a multi-objective optimization model is introduced to select an optimal matching scheme via a min-max approach. The results provide new insights and implications of the influence on evaluative criteria in the TSM decision.

Efficient density matrix renormalization group algorithm to study Y junctions with integer and half-integer spin

KAUST Repository

Kumar, Manoranjan

2016-02-03

An efficient density matrix renormalization group (DMRG) algorithm is presented and applied to Y junctions, systems with three arms of n sites that meet at a central site. The accuracy is comparable to DMRG of chains. As in chains, new sites are always bonded to the most recently added sites and the superblock Hamiltonian contains only new or once renormalized operators. Junctions of up to N=3n+1≈500 sites are studied with antiferromagnetic (AF) Heisenberg exchange J between nearest-neighbor spins S or electron transfer t between nearest neighbors in half-filled Hubbard models. Exchange or electron transfer is exclusively between sites in two sublattices with NA≠NB. The ground state (GS) and spin densities ρr=⟨Szr⟩ at site r are quite different for junctions with S=1/2, 1, 3/2, and 2. The GS has finite total spin SG=2S(S) for even (odd) N and for MG=SG in the SG spin manifold, ρr>0(<0) at sites of the larger (smaller) sublattice. S=1/2 junctions have delocalized states and decreasing spin densities with increasing N. S=1 junctions have four localized Sz=1/2 states at the end of each arm and centered on the junction, consistent with localized states in S=1 chains with finite Haldane gap. The GS of S=3/2 or 2 junctions of up to 500 spins is a spin density wave with increased amplitude at the ends of arms or near the junction. Quantum fluctuations completely suppress AF order in S=1/2 or 1 junctions, as well as in half-filled Hubbard junctions, but reduce rather than suppress AF order in S=3/2 or 2 junctions.

Efficient density matrix renormalization group algorithm to study Y junctions with integer and half-integer spin

KAUST Repository

Kumar, Manoranjan; Parvej, Aslam; Thomas, Simil; Ramasesha, S.; Soos, Z. G.

2016-01-01

An efficient density matrix renormalization group (DMRG) algorithm is presented and applied to Y junctions, systems with three arms of n sites that meet at a central site. The accuracy is comparable to DMRG of chains. As in chains, new sites are always bonded to the most recently added sites and the superblock Hamiltonian contains only new or once renormalized operators. Junctions of up to N=3n+1≈500 sites are studied with antiferromagnetic (AF) Heisenberg exchange J between nearest-neighbor spins S or electron transfer t between nearest neighbors in half-filled Hubbard models. Exchange or electron transfer is exclusively between sites in two sublattices with NA≠NB. The ground state (GS) and spin densities ρr=⟨Szr⟩ at site r are quite different for junctions with S=1/2, 1, 3/2, and 2. The GS has finite total spin SG=2S(S) for even (odd) N and for MG=SG in the SG spin manifold, ρr>0(<0) at sites of the larger (smaller) sublattice. S=1/2 junctions have delocalized states and decreasing spin densities with increasing N. S=1 junctions have four localized Sz=1/2 states at the end of each arm and centered on the junction, consistent with localized states in S=1 chains with finite Haldane gap. The GS of S=3/2 or 2 junctions of up to 500 spins is a spin density wave with increased amplitude at the ends of arms or near the junction. Quantum fluctuations completely suppress AF order in S=1/2 or 1 junctions, as well as in half-filled Hubbard junctions, but reduce rather than suppress AF order in S=3/2 or 2 junctions.

An array of cold-electron bolometers with SIN tunnel junctions and JFET readout for cosmology instruments

International Nuclear Information System (INIS)

Kuzmin, L

2008-01-01

A novel concept of the parallel/series array of Cold-Electron Bolometers (CEB) with Superconductor-Insulator-Normal (SIN) Tunnel Junctions has been proposed. The concept was developed specially for matching the CEB with JFET amplifier at conditions of high optical power load. The CEB is a planar antenna-coupled superconducting detector with high sensitivity. For combination of effective HF operation and low noise properties the current-biased CEBs are connected in series for DC and in parallel for HF signal. A signal is concentrated from an antenna to the absorber through the capacitance of the tunnel junctions and through additional capacitance for coupling of superconducting islands. Using array of CEBs the applications can be considerably extended to higher power load by distributing the power between N CEBs and decreasing the electron temperature. Due to increased responsivity the noise matching is so effective that photon NEP could be easily achieved at 300 mK with a room temperature JFET for wide range of optical power loads. The concept of the CEB array has been developed for the BOOMERanG balloon telescope and other Cosmology instruments

Valley and spin resonant tunneling current in ferromagnetic/nonmagnetic/ferromagnetic silicene junction

Directory of Open Access Journals (Sweden)

Yaser Hajati

2016-02-01

Full Text Available We study the transport properties in a ferromagnetic/nonmagnetic/ferromagnetic (FNF silicene junction in which an electrostatic gate potential, U, is attached to the nonmagnetic region. We show that the electrostatic gate potential U is a useful probe to control the band structure, quasi-bound states in the nonmagnetic barrier as well as the transport properties of the FNF silicene junction. In particular, by introducing the electrostatic gate potential, both the spin and valley conductances of the junction show an oscillatory behavior. The amplitude and frequency of such oscillations can be controlled by U. As an important result, we found that by increasing U, the second characteristic of the Klein tunneling is satisfied as a result of the quasiparticles chirality which can penetrate through a potential barrier. Moreover, it is found that for special values of U, the junction shows a gap in the spin and valley-resolve conductance and the amplitude of this gap is only controlled by the on-site potential difference, Δz. Our findings of high controllability of the spin and valley transport in such a FNF silicene junction may improve the performance of nano-electronics and spintronics devices.

Effect of low and staggered gap quantum wells inserted in GaAs tunnel junctions

Science.gov (United States)

Louarn, K.; Claveau, Y.; Marigo-Lombart, L.; Fontaine, C.; Arnoult, A.; Piquemal, F.; Bounouh, A.; Cavassilas, N.; Almuneau, G.

2018-04-01

In this article, we investigate the impact of the insertion of either a type I InGaAs or a type II InGaAs/GaAsSb quantum well on the performances of MBE-grown GaAs tunnel junctions (TJs). The devices are designed and simulated using a quantum transport model based on the non-equilibrium Green’s function formalism and a 6-band k.p Hamiltonian. We experimentally observe significant improvements of the peak tunneling current density on both heterostructures with a 460-fold increase for a moderately doped GaAs TJ when the InGaAs QW is inserted at the junction interface, and a 3-fold improvement on a highly doped GaAs TJ integrating a type II InGaAs/GaAsSb QW. Thus, the simple insertion of staggered band lineup heterostructures enables us to reach a tunneling current well above the kA cm‑2 range, equivalent to the best achieved results for Si-doped GaAs TJs, implying very interesting potential for TJ-based components, such as multi-junction solar cells, vertical cavity surface emitting lasers and tunnel-field effect transistors.

High current, high bandwidth laser diode current driver

Science.gov (United States)

Copeland, David J.; Zimmerman, Robert K., Jr.

1991-01-01

A laser diode current driver has been developed for free space laser communications. The driver provides 300 mA peak modulation current and exhibits an optical risetime of less than 400 ps. The current and optical pulses are well behaved and show minimal ringing. The driver is well suited for QPPM modulation at data rates up to 440 Mbit/s. Much previous work has championed current steering circuits; in contrast, the present driver is a single-ended on/off switch. This results in twice the power efficiency as a current steering driver. The driver electrical efficiency for QPPM data is 34 percent. The high speed switch is realized with a Ku-band GaAsFET transistor, with a suitable pre-drive circuit, on a hybrid microcircuit adjacent to the laser diode.

Detailed investigation of the bifurcation diagram of capacitively coupled Josephson junctions in high-Tc superconductors and its self similarity

Science.gov (United States)

Hamdipour, Mohammad

2018-04-01

We study an array of coupled Josephson junction of superconductor/insulator/superconductor type (SIS junction) as a model for high temperature superconductors with layered structure. In the current-voltage characteristics of this system there is a breakpoint region in which a net electric charge appear on superconducting layers, S-layers, of junctions which motivate us to study the charge dynamics in this region. In this paper first of all we show a current voltage characteristics (CVC) of Intrinsic Josephson Junctions (IJJs) with N=3 Junctions, then we show the breakpoint region in that CVC, then we try to investigate the chaos in this region. We will see that at the end of the breakpoint region, behavior of the system is chaotic and Lyapunov exponent become positive. We also study the route by which the system become chaotic and will see this route is bifurcation. Next goal of this paper is to show the self similarity in the bifurcation diagram of the system and detailed analysis of bifurcation diagram.

Ballistic Graphene Josephson Junctions from the Short to the Long Junction Regimes.

Science.gov (United States)

Borzenets, I V; Amet, F; Ke, C T; Draelos, A W; Wei, M T; Seredinski, A; Watanabe, K; Taniguchi, T; Bomze, Y; Yamamoto, M; Tarucha, S; Finkelstein, G

2016-12-02

We investigate the critical current I_{C} of ballistic Josephson junctions made of encapsulated graphene-boron-nitride heterostructures. We observe a crossover from the short to the long junction regimes as the length of the device increases. In long ballistic junctions, I_{C} is found to scale as ∝exp(-k_{B}T/δE). The extracted energies δE are independent of the carrier density and proportional to the level spacing of the ballistic cavity. As T→0 the critical current of a long (or short) junction saturates at a level determined by the product of δE (or Δ) and the number of the junction's transversal modes.

Exploiting multi-function Metal-Organic Framework nanocomposite Ag@Zn-TSA as highly efficient immobilization matrixes for sensitive electrochemical biosensing

Energy Technology Data Exchange (ETDEWEB)

Dong, Sheying, E-mail: dongsyy@126.com [College of Sciences, Xi' an University of Architecture and Technology, Xi' an, 710055 (China); Zhang, Dandan; Suo, Gaochao; Wei, Wenbo [College of Sciences, Xi' an University of Architecture and Technology, Xi' an, 710055 (China); Huang, Tinglin [School of Environmental and Municipal Engineering, Xi' an University of Architecture and Technology, Xi' an, 710055 (China)

2016-08-31

A novel multi-function Metal-Organic Framework composite Ag@Zn-TSA (zinc thiosalicylate, Zn(C{sub 7}H{sub 4}O{sub 2}S), Zn-TSA) was synthesized as highly efficient immobilization matrixes of myoglobin (Mb)/glucose oxidase (GOx) for electrochemical biosensing. The electrochemical biosensors based on Ag@Zn-TSA composite and ionic liquid (IL) modified carbon paste electrode (CPE) were fabricated successfully. Furthermore, the properties of the sensors were discussed by cyclic voltammetry (CV), electrochemical impedance spectroscopy (EIS) and amperometric current-time curve, respectively. The results showed the proposed biosensors had wide linear response to hydrogen peroxide (H{sub 2}O{sub 2}) in the range of 0.3–20,000 μM, to nitrite (NO{sub 2}{sup −}) for 1.3 μM–1660 μM and 2262 μM–1,33,000 μM, to glucose for 2.0–1022 μM, with a low detection limit of 0.08 μM for H{sub 2}O{sub 2}, 0.5 μM for NO{sub 2}{sup −}, 0.8 μM for glucose. The values of the apparent heterogeneous electron transfer rate constant (k{sub s}) for Mb and GOx were estimated as 2.05 s{sup −1} and 2.45 s{sup −1}, respectively. Thus, Ag@Zn-TSA was a kind of ideal material as highly efficient immobilization matrixes for sensitive electrochemical biosensing. In addition, this work indicated that MOF nanocomposite had a great potential for constructing wide range of sensing interface. - Highlights: • Novel Ag@Zn-TSA was used as highly efficient immobilization matrixes of Mb/glucose. • We exploited multi-function MOFs for a wide range of electrocatalytic sensing interface. • The proposed biosensors had an excellent catalytic effect on the small molecule (NO{sub 2}{sup −}, H{sub 2}O{sub 2}, glucose).

High quality junctions by interpenetration of vapor liquid solid grown nanostructures for microchip integration

Energy Technology Data Exchange (ETDEWEB)

Jebril, Seid; Kuhlmann, Hanna; Adelung, Rainer [Funktionale Nanomaterialien, CAU Kiel (Germany); Mueller, Sven [Nanowires and Thin Films, II. Physikalisches Institut, Goettingen (Germany); Ronning, Carsten [Institute for Solid State Physics, Universitaet Jena (Germany); Kienle, Lorenz [Synthese und Realstruktur, CAU Kiel (Germany); Duppel, Viola [MPI fuer Festkoerperforschung, Stuttgart (Germany)

2009-07-01

The usability of nanostructures in electrical devices like gas sensors depends critically on the ability to form high quality contacts and junctions. For the fabrication of various nanostructures, vapor-liquid-solid (VLS) growth is a wide spread and very efficient technique. However, forming contacts with the VLS grown structures to utilize them in a device is still tedious, because either the substrate has to be epitaxial to the VLS material or a manual alignment is necessary. Here we demonstrate the contact formation by simply using the ability of individual crystals to interpenetrate each other during the straight forward VLS growth. This allows growing VLS structures directly on two neighboring gold circuit paths of a microchip; bridges over predefined gaps will be formed. Moreover, TEM investigations confirm the high quality of the crystalline junctions that allow demonstrations as UV and hydrogen-sensor. The VLS devices are compared with conventional produced.

Development of an IH-type linac for the acceleration of high current heavy ion beams

Energy Technology Data Exchange (ETDEWEB)

Haehnel, Jan Hendrik

2017-07-20

The Facility for Antiproton and Ion Research (FAIR) at GSI Darmstadt will provide unprecedented intensities of protons and heavy ions up to uranium at energies of up to 29 GeV for protons and 2.7 GeV/u for U{sup 28+}. To achieve high intensities in the synchrotron accelerators, high beam currents have to be provided by the injector linear accelerators. High current heavy ion beams are provided by the Universal Linear Accelerator (UNILAC), which in its current state will not be able to provide the required FAIR beam currents. This thesis deals with the development of upgrades for the UNILAC to ensure its high current capability. The first improvement is a matching section (MEBT) for the interface between the RFQ and the IH-DTL of the existing high current injector HSI at the UNILAC. With this new MEBT section, particle losses are eliminated and the overall beam quality is improved. As a second improvement, a complete replacement of the existing Alvarez-DTL is presented. A combination of efficient IH-type cavities and KONUS beam dynamics results in a reduction of the linac length from about 60 m (Alvarez) to just 23 m (new IH-DTL) while providing the same energy and fulfilling FAIR requirements of a high beam current and beam quality. This thesis contains a detailed beam dynamics design of the new linac including some fundamental investigations of the KONUS beam dynamics concept. A cross-check of the beam dynamics design was performed with two independent multi-particle simulation codes. Detailed error studies were conducted to investigate the influence of manufacturing, alignment and operating errors on the beam dynamics performance. Additionally, all five linac cavities were designed, optimized, and their RF parameters including power requirements calculated to provide a comprehensive linac design.

Development of an IH-type linac for the acceleration of high current heavy ion beams

International Nuclear Information System (INIS)

Haehnel, Jan Hendrik

2017-01-01

The Facility for Antiproton and Ion Research (FAIR) at GSI Darmstadt will provide unprecedented intensities of protons and heavy ions up to uranium at energies of up to 29 GeV for protons and 2.7 GeV/u for U 28+ . To achieve high intensities in the synchrotron accelerators, high beam currents have to be provided by the injector linear accelerators. High current heavy ion beams are provided by the Universal Linear Accelerator (UNILAC), which in its current state will not be able to provide the required FAIR beam currents. This thesis deals with the development of upgrades for the UNILAC to ensure its high current capability. The first improvement is a matching section (MEBT) for the interface between the RFQ and the IH-DTL of the existing high current injector HSI at the UNILAC. With this new MEBT section, particle losses are eliminated and the overall beam quality is improved. As a second improvement, a complete replacement of the existing Alvarez-DTL is presented. A combination of efficient IH-type cavities and KONUS beam dynamics results in a reduction of the linac length from about 60 m (Alvarez) to just 23 m (new IH-DTL) while providing the same energy and fulfilling FAIR requirements of a high beam current and beam quality. This thesis contains a detailed beam dynamics design of the new linac including some fundamental investigations of the KONUS beam dynamics concept. A cross-check of the beam dynamics design was performed with two independent multi-particle simulation codes. Detailed error studies were conducted to investigate the influence of manufacturing, alignment and operating errors on the beam dynamics performance. Additionally, all five linac cavities were designed, optimized, and their RF parameters including power requirements calculated to provide a comprehensive linac design.

Mesoscopic fluctuations in the critical current in InAs-coupled Josephson junctions

International Nuclear Information System (INIS)

Takayanagi, Hideaki; Hansen, J.B.; Nitta, Junsaku

1994-01-01

Mesoscopic fluctuations were confirmed for the critical current in a p-type InAs-coupled Josephson junction. The critical current was measured as a function of the gate voltage corresponding to the change in the Fermi energy. The critical current showed a mesoscopic fluctuation and its behavior was the same as that of the conductance measured at the same time in both the weak and strong localization regimes. The magnitude and the typical period of the fluctuation are discussed and compared to theoretical predictions. ((orig.))

Efficient single light-emitting layer pure blue phosphorescent organic light-emitting devices with wide gap host and matched interlayer

Energy Technology Data Exchange (ETDEWEB)

Jiang, Yunlong; Zhou, Liang, E-mail: zhoul@ciac.ac.cn; Cui, Rongzhen; Li, Yanan; Zhao, Xuesen; Zhang, Hongjie, E-mail: hongjie@ciac.ac.cn

2015-12-15

In this work, we report the highly efficient pure blue electroluminescent (EL) device based on bis[(3,5-difluoro-4-cyanophenyl)pyridine]picolinate iridium(III) (FCNIrpic) doped 9-(4-tert-Butylphenyl)-3,6-bis(triphenylsilyl)-9H-carbazole (CzSi) film. The matched energy levels of FCNIrpic and CzSi are helpful in facilitating the trapping of carriers, while the high triplet energy of CzSi can well avoid the undesired reverse energy transfer. More importantly, the injection of holes was further accelerated by inserting 5 nm 4,4′,4″-Tri(9-carbazoyl)triphenylamine (TcTa) film between hole transport layer and lighting-emitting layer (EML) as interlayer. Consequently, EL performances were significantly enhanced attributed to wider recombination zone and better balance of holes and electrons. Interestingly, single-EML device displayed higher performances than those of double-EMLs device. Finally, pure blue EL device with the structure of ITO/MoO{sub 3} (3 nm)/TAPC (40 nm)/TcTa (5 nm)/FCNIrpic (20%): CzSi (30 nm)/TmPyPB (40 nm)/LiF (1 nm)/Al (100 nm) realized the maximum brightness, current efficiency, power efficiency and external quantum efficiency up to 12,505 cd/m{sup 2}, 36.20 cd/A, 28.42 lm/W and 16.9%, respectively. Even at the high brightness of 1000 cd/m{sup 2}, current efficiency and external quantum efficiency up to 17.40 cd/A and 8.1%, respectively, can be retained by the same device.

Observation of supercurrent in graphene-based Josephson junction

Energy Technology Data Exchange (ETDEWEB)

Wang, Libin; Li, Sen; Kang, Ning [Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871 (China); Xu, Chuan; Ren, Wencai [Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016 (China)

2015-07-01

Josephson junctions with a normal metal region sandwiched between two superconductors (S) are known as superconductor- normal-superconductor (SNS) structures. It has attracted significant attention especially when changing the normal metal with graphene, which allow for high tunability with the gate voltage and to study the proximity effect of the massless Dirac fermions. Here we report our work on graphene-based Josephson junction with a new two dimensional superconductor crystal, which grown directly on graphene, as superconducting electrodes. At low temperature, we observer proximity effect induced supercurrent flowing through the junction. The temperature and the magnetic field dependences of the critical current characteristics of the junction are also studied. The critical current exhibits a Fraunhofer-type diffraction pattern against magnetic field. Our experiments provided a new route of fabrication of graphene-based Josephson junction.

n-GaAs/InGaP/p-GaAs core-multishell nanowire diodes for efficient light-to-current conversion

Energy Technology Data Exchange (ETDEWEB)

Gutsche, Christoph; Lysov, Andrey; Regolin, Ingo; Keller, Gregor; Prost, Werner; Tegude, Franz-Josef [Department of Solid-State Electronics and CeNIDE University of Duisburg-Essen, Duisburg (Germany); Braam, Daniel; Li, Zi-An; Geller, Martin; Spasova, Marina [Department of Experimental Physics and CeNIDE University of Duisburg-Essen, Duisburg (Germany)

2012-03-07

Heterostructure n-GaAs/InGaP/p-GaAs core-multishell nanowire diodes are synthesized by metal-organic vapor-phase epitaxy. This structure allows a reproducible, selective wet etching of the individual shells and therefore a simplified contacting of single nanowire p-i-n junctions. Nanowire diodes show leakage currents in a low pA range and at a high rectification ratio of 3500 (at {+-}1V). Pronounced electroluminescence at 1.4 eV is measured at room temperature and gives evidence of the device quality. Photocurrent generation is demonstrated at the complete area of the nanowire p-i-n junction by scanning photocurrent microscopy. A solar-conversion efficiency of 4.7%, an open-circuit voltage of 0.5 V and a fill factor of 52% are obtained under AM 1.5G conditions. These results will guide the development of nanowire-based photonic and photovoltaic devices. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

3D OBJECT COORDINATES EXTRACTION BY RADARGRAMMETRY AND MULTI STEP IMAGE MATCHING

Directory of Open Access Journals (Sweden)

A. Eftekhari

2013-09-01

Full Text Available Nowadays by high resolution SAR imaging systems as Radarsat-2, TerraSAR-X and COSMO-skyMed, three-dimensional terrain data extraction using SAR images is growing. InSAR and Radargrammetry are two most common approaches for removing 3D object coordinate from SAR images. Research has shown that extraction of terrain elevation data using satellite repeat pass interferometry SAR technique due to atmospheric factors and the lack of coherence between the images in areas with dense vegetation cover is a problematic. So the use of Radargrammetry technique can be effective. Generally height derived method by Radargrammetry consists of two stages: Images matching and space intersection. In this paper we propose a multi-stage algorithm founded on the combination of feature based and area based image matching. Then the RPCs that calculate for each images use for extracting 3D coordinate in matched points. At the end, the coordinates calculating that compare with coordinates extracted from 1 meters DEM. The results show root mean square errors for 360 points are 3.09 meters. We use a pair of spotlight TerraSAR-X images from JAM (IRAN in this article.

High Efficiency Quantum Well Waveguide Solar Cells and Methods for Constructing the Same

Science.gov (United States)

Welser, Roger E. (Inventor); Sood, Ashok K. (Inventor)

2014-01-01

Photon absorption, and thus current generation, is hindered in conventional thin-film solar cell designs, including quantum well structures, by the limited path length of incident light passing vertically through the device. Optical scattering into lateral waveguide structures provides a physical mechanism to increase photocurrent generation through in-plane light trapping. However, the insertion of wells of high refractive index material with lower energy gap into the device structure often results in lower voltage operation, and hence lower photovoltaic power conversion efficiency. The voltage output of an InGaAs quantum well waveguide photovoltaic device can be increased by employing a III-V material structure with an extended wide band gap emitter heterojunction. Analysis of the light IV characteristics reveals that non-radiative recombination components of the underlying dark diode current have been reduced, exposing the limiting radiative recombination component and providing a pathway for realizing solar-electric conversion efficiency of 30% or more in single junction cells.

Spin-filtering junctions with double ferroelectric barriers

International Nuclear Information System (INIS)

Yan, Ju; Ding-Yu, Xing

2009-01-01

An FS/FE/NS/FE/FS double tunnel junction is suggested to have the ability to inject, modulate and detect the spin-polarized current electrically in a single device, where FS is the ferromagnetic semiconductor electrode, NS is the nonmagnetic semiconductor, and FE the ferroelectric barrier. The spin polarization of the current injected into the NS region can be switched between a highly spin-polarized state and a spin unpolarized state. The high spin polarization may be detected by measuring the tunneling magnetoresistance ratio of the double tunnel junction

Many-junction photovoltaic device performance under non-uniform high-concentration illumination

Science.gov (United States)

Valdivia, Christopher E.; Wilkins, Matthew M.; Chahal, Sanmeet S.; Proulx, Francine; Provost, Philippe-Olivier; Masson, Denis P.; Fafard, Simon; Hinzer, Karin

2017-09-01

A parameterized 3D distributed circuit model was developed to calculate the performance of III-V solar cells and photonic power converters (PPC) with a variable number of epitaxial vertically-stacked pn junctions. PPC devices are designed with many pn junctions to realize higher voltages and to operate under non-uniform illumination profiles from a laser or LED. Performance impacts of non-uniform illumination were greatly reduced with increasing number of junctions, with simulations comparing PPC devices with 3 to 20 junctions. Experimental results using Azastra Opto's 12- and 20-junction PPC illuminated by an 845 nm diode laser show high performance even with a small gap between the PPC and optical fiber output, until the local tunnel junction limit is reached.

Schottky junction interfacial properties at high temperature: A case of AgNWs embedded metal oxide/p-Si

Science.gov (United States)

Mahala, Pramila; Patel, Malkeshkumar; Gupta, Navneet; Kim, Joondong; Lee, Byung Ha

2018-05-01

Studying the performance limiting parameters of the Schottky device is an urgent issue, which are addressed herein by thermally stable silver nanowire (AgNW) embedded metal oxide/p-Si Schottky device. Temperature and bias dependent junction interfacial properties of AgNW-ITO/Si Schottky photoelectric device are reported. The current-voltage-temperature (I-V-T), capacitance-voltage-temperature (C-V-T) and impedance analysis have been carried out in the high-temperature region. The ideality factor and barrier height of Schottky junction are assessed using I-V-T characteristics and thermionic emission, to reveal the decrease of ideality factor and increase of barrier height by the increasing of temperature. The extracted values of laterally homogeneous Schottky (ϕb) and ideality factor (n) are approximately 0.73 eV and 1.58, respectively. Series resistance (Rs) assessed using Cheung's method and found that it decreases with the increase of temperature. A linear response of Rs of AgNW-ITO/Si Schottky junction is observed with respect to change in forward bias, i.e. dRS/dV from 0 to 0.7 V is in the range of 36.12-36.43 Ω with a rate of 1.44 Ω/V. Impedance spectroscopy is used to study the effect of bias voltage and temperature on intrinsic Schottky properties which are responsible for photoconversion efficiency. These systematic analyses are useful for the AgNWs-embedding Si solar cells or photoelectrochemical cells.

Toward High-Efficiency Solution-Processed Planar Heterojunction Sb2S3 Solar Cells.

Science.gov (United States)

Zimmermann, Eugen; Pfadler, Thomas; Kalb, Julian; Dorman, James A; Sommer, Daniel; Hahn, Giso; Weickert, Jonas; Schmidt-Mende, Lukas

2015-05-01

Low-cost hybrid solar cells have made tremendous steps forward during the past decade owing to the implementation of extremely thin inorganic coatings as absorber layers, typically in combination with organic hole transporters. Using only extremely thin films of these absorbers reduces the requirement of single crystalline high-quality materials and paves the way for low-cost solution processing compatible with roll-to-roll fabrication processes. To date, the most efficient absorber material, except for the recently introduced organic-inorganic lead halide perovskites, has been Sb 2 S 3 , which can be implemented in hybrid photovoltaics using a simple chemical bath deposition. Current high-efficiency Sb 2 S 3 devices utilize absorber coatings on nanostructured TiO 2 electrodes in combination with polymeric hole transporters. This geometry has so far been the state of the art, even though flat junction devices would be conceptually simpler with the additional potential of higher open circuit voltages due to reduced charge carrier recombination. Besides, the role of the hole transporter is not completely clarified yet. In particular, additional photocurrent contribution from the polymers has not been directly shown, which points toward detrimental parasitic light absorption in the polymers. This study presents a fine-tuned chemical bath deposition method that allows fabricating solution-processed low-cost flat junction Sb 2 S 3 solar cells with the highest open circuit voltage reported so far for chemical bath devices and efficiencies exceeding 4%. Characterization of back-illuminated solar cells in combination with transfer matrix-based simulations further allows to address the issue of absorption losses in the hole transport material and outline a pathway toward more efficient future devices.

Using ion irradiation to make high-Tc Josephson junctions

International Nuclear Information System (INIS)

Bergeal, N.; Lesueur, J.; Sirena, M.; Faini, G.; Aprili, M.; Contour, J. P.; Leridon, B.

2007-01-01

In this article we describe the effect of ion irradiation on high-T c superconductor thin film and its interest for the fabrication of Josephson junctions. In particular, we show that these alternative techniques allow to go beyond most of the limitations encountered in standard junction fabrication methods, both in the case of fundamental and technological purposes. Two different geometries are presented: a planar one using a single high-T c film and a mesa one defined in a trilayer structure

Colossal X-Ray-Induced Persistent Photoconductivity in Current-Perpendicular-to-Plane Ferroelectric/Semiconductor Junctions

KAUST Repository

Hu, Weijin; Paudel, Tula R.; Lopatin, Sergei; Wang, Zhihong; Ma, He; Wu, Kewei; Bera, Ashok; Yuan, Guoliang; Gruverman, Alexei; Tsymbal, Evgeny Y.; Wu, Tao

2017-01-01

. So far, PPC has been observed in bulk materials and thin-film structures, where the current flows in the plane, limiting the magnitude of the effect. Here using epitaxial Nb:SrTiO3/Sm0.1Bi0.9FeO3/Pt junctions with a current-perpendicular-to-plane

Chaos and multi-scroll attractors in RCL-shunted junction coupled Jerk circuit connected by memristor.

Directory of Open Access Journals (Sweden)

Jun Ma

Full Text Available In this paper, a new four-variable dynamical system is proposed to set chaotic circuit composed of memristor and Josephson junction, and the dependence of chaotic behaviors on nonlinearity is investigated. A magnetic flux-controlled memristor is used to couple with the RCL-shunted junction circuit, and the dynamical behaviors can be modulated by changing the coupling intensity between the memristor and the RCL-shunted junction. Bifurcation diagram and Lyapunov exponent are calculated to confirm the emergence of chaos in the improved dynamical system. The outputs and dynamical behaviors can be controlled by the initial setting and external stimulus as well. As a result, chaos can be suppressed and spiking occurs in the sampled outputs under negative feedback, while applying positive feedback type via memristor can be effective to trigger chaos. Furthermore, it is found that the number of multi-attractors in the Jerk circuit can be modulated when memristor coupling is applied on the circuit. These results indicate that memristor coupling can be effective to control chaotic circuits and it is also useful to reproduce dynamical behaviors for neuronal activities.

Multi-modal image registration: matching MRI with histology

Science.gov (United States)

Alic, Lejla; Haeck, Joost C.; Klein, Stefan; Bol, Karin; van Tiel, Sandra T.; Wielopolski, Piotr A.; Bijster, Magda; Niessen, Wiro J.; Bernsen, Monique; Veenland, Jifke F.; de Jong, Marion

2010-03-01

Spatial correspondence between histology and multi sequence MRI can provide information about the capabilities of non-invasive imaging to characterize cancerous tissue. However, shrinkage and deformation occurring during the excision of the tumor and the histological processing complicate the co registration of MR images with histological sections. This work proposes a methodology to establish a detailed 3D relation between histology sections and in vivo MRI tumor data. The key features of the methodology are a very dense histological sampling (up to 100 histology slices per tumor), mutual information based non-rigid B-spline registration, the utilization of the whole 3D data sets, and the exploitation of an intermediate ex vivo MRI. In this proof of concept paper, the methodology was applied to one tumor. We found that, after registration, the visual alignment of tumor borders and internal structures was fairly accurate. Utilizing the intermediate ex vivo MRI, it was possible to account for changes caused by the excision of the tumor: we observed a tumor expansion of 20%. Also the effects of fixation, dehydration and histological sectioning could be determined: 26% shrinkage of the tumor was found. The annotation of viable tissue, performed in histology and transformed to the in vivo MRI, matched clearly with high intensity regions in MRI. With this methodology, histological annotation can be directly related to the corresponding in vivo MRI. This is a vital step for the evaluation of the feasibility of multi-spectral MRI to depict histological groundtruth.

Influence of quasiparticle multi-tunneling on the energy flow through the superconducting tunnel junction

International Nuclear Information System (INIS)

Samedov, V. V.; Tulinov, B. M.

2011-01-01

Superconducting tunnel junction (STJ) detector consists of two layers of superconducting material separated by thin insulating barrier. An incident particle produces in superconductor excess nonequilibrium quasiparticles. Each quasiparticle in superconductor should be considered as quantum superposition of electron-like and hole-like excitations. This duality nature of quasiparticle leads to the effect of multi-tunneling. Quasiparticle starts to tunnel back and forth through the insulating barrier. After tunneling from biased electrode quasiparticle loses its energy via phonon emission. Eventually, the energy that equals to the difference in quasiparticle energy between two electrodes is deposited in the signal electrode. Because of the process of multi-tunneling, one quasiparticle can deposit energy more than once. In this work, the theory of branching cascade processes was applied to the process of energy deposition caused by the quasiparticle multi-tunneling. The formulae for the mean value and variance of the energy transferred by one quasiparticle into heat were derived. (authors)

Optical and Electrical Properties of Al/(p)Bi2S3 Schottky Junction

International Nuclear Information System (INIS)

Kachari, T.; Wary, G.; Rahman, A.

2010-01-01

Thin film Al/(p)Bi 2 S 3 Schottky junctions were prepared by vacuum evaporation under pressure 10 -6 Torr. The p-type Bi 2 S 3 thin films with acceptor concentration (3.36-7.33)x10 16 /cm 3 were obtained by evaporating 'In' along with Bi 2 S 3 powder and then annealing the films at 453K for 5 hours. Different junction-parameters such as ideality factor, barrier height, effective Richardson's constant, short-circuit current, etc. were determined from I-V characteristics. The junctions exhibited rectifying I-V characteristics and also photovoltaic effect. Ideality factor was found to decrease with the increase of temperature. Proper doping, annealing, and hydrogenation are necessary to reduce the series resistance so as to achieve high carrier efficiency. More works are being carried out in this direction.

Variability study of Si nanowire FETs with different junction gradients

Directory of Open Access Journals (Sweden)

Jun-Sik Yoon

2016-01-01

Full Text Available Random dopant fluctuation effects of gate-all-around Si nanowire field-effect transistors (FETs are investigated in terms of different diameters and junction gradients. The nanowire FETs with smaller diameters or shorter junction gradients increase relative variations of the drain currents and the mismatch of the drain currents between source-drain and drain-source bias change in the saturation regime. Smaller diameters decreased current drivability critically compared to standard deviations of the drain currents, thus inducing greater relative variations of the drain currents. Shorter junction gradients form high potential barriers in the source-side lightly-doped extension regions at on-state, which determines the magnitude of the drain currents and fluctuates the drain currents greatly under thermionic-emission mechanism. On the other hand, longer junction gradients affect lateral field to fluctuate the drain currents greatly. These physical phenomena coincide with correlations of the variations between drain currents and electrical parameters such as threshold voltages and parasitic resistances. The nanowire FETs with relatively-larger diameters and longer junction gradients without degrading short channel characteristics are suggested to minimize the relative variations and the mismatch of the drain currents.

Accurate reconstruction of the jV-characteristic of organic solar cells from measurements of the external quantum efficiency

Science.gov (United States)

Meyer, Toni; Körner, Christian; Vandewal, Koen; Leo, Karl

2018-04-01

In two terminal tandem solar cells, the current density - voltage (jV) characteristic of the individual subcells is typically not directly measurable, but often required for a rigorous device characterization. In this work, we reconstruct the jV-characteristic of organic solar cells from measurements of the external quantum efficiency under applied bias voltages and illumination. We show that it is necessary to perform a bias irradiance variation at each voltage and subsequently conduct a mathematical correction of the differential to the absolute external quantum efficiency to obtain an accurate jV-characteristic. Furthermore, we show that measuring the external quantum efficiency as a function of voltage for a single bias irradiance of 0.36 AM1.5g equivalent sun provides a good approximation of the photocurrent density over voltage curve. The method is tested on a selection of efficient, common single-junctions. The obtained conclusions can easily be transferred to multi-junction devices with serially connected subcells.

Pronounced Environmental Effects on Injection Currents in EGaIn Tunneling Junctions Comprising Self-Assembled Monolayers.

Science.gov (United States)

Carlotti, Marco; Degen, Maarten; Zhang, Yanxi; Chiechi, Ryan C

2016-09-15

Large-area tunneling junctions using eutectic Ga-In (EGaIn) as a top contact have proven to be a robust, reproducible, and technologically relevant platform for molecular electronics. Thus far, the majority of studies have focused on saturated molecules with backbones consisting mainly of alkanes in which the frontier orbitals are either highly localized or energetically inaccessible. We show that self-assembled monolayers of wire-like oligophenyleneethynylenes (OPEs), which are fully conjugated, only exhibit length-dependent tunneling behavior in a low-O 2 environment. We attribute this unexpected behavior to the sensitivity of injection current on environment. We conclude that, contrary to previous reports, the self-limiting layer of Ga 2 O 3 strongly influences transport properties and that the effect is related to the wetting behavior of the electrode. This result sheds light on the nature of the electrode-molecule interface and suggests that adhesive forces play a significant role in tunneling charge-transport in large-area molecular junctions.

Single-Molecule Photocurrent at a Metal-Molecule-Semiconductor Junction.

Science.gov (United States)

Vezzoli, Andrea; Brooke, Richard J; Higgins, Simon J; Schwarzacher, Walther; Nichols, Richard J

2017-11-08

We demonstrate here a new concept for a metal-molecule-semiconductor nanodevice employing Au and GaAs contacts that acts as a photodiode. Current-voltage traces for such junctions are recorded using a STM, and the "blinking" or "I(t)" method is used to record electrical behavior at the single-molecule level in the dark and under illumination, with both low and highly doped GaAs samples and with two different types of molecular bridge: nonconjugated pentanedithiol and the more conjugated 1,4-phenylene(dimethanethiol). Junctions with highly doped GaAs show poor rectification in the dark and a low photocurrent, while junctions with low doped GaAs show particularly high rectification ratios in the dark (>10 3 for a 1.5 V bias potential) and a high photocurrent in reverse bias. In low doped GaAs, the greater thickness of the depletion layer not only reduces the reverse bias leakage current, but also increases the volume that contributes to the photocurrent, an effect amplified by the point contact geometry of the junction. Furthermore, since photogenerated holes tunnel to the metal electrode assisted by the HOMO of the molecular bridge, the choice of the latter has a strong influence on both the steady state and transient metal-molecule-semiconductor photodiode response. The control of junction current via photogenerated charge carriers adds new functionality to single-molecule nanodevices.

Fabrication of a Tantalum-Based Josephson Junction for an X-Ray Detector

Science.gov (United States)

Morohashi, Shin'ichi; Gotoh, Kohtaroh; Yokoyama, Naoki

2000-06-01

We have fabricated a tantalum-based Josephson junction for an X-ray detector. The tantalum layer was selected for the junction electrode because of its long quasiparticle lifetime, large X-ray absorption efficiency and stability against thermal cycling. We have developed a buffer layer to fabricate the tantalum layer with a body-centered cubic structure. Based on careful consideration of their superconductivity, we have selected a niobium thin layer as the buffer layer for fabricating the tantalum base electrode, and a tungsten thin layer for the tantalum counter electrode. Fabricated Nb/AlOx-Al/Ta/Nb and Nb/Ta/W/AlOx-Al/Ta/Nb Josephson junctions exhibited current-voltage characteristics with a low subgap leakage current.

Magnetization switching driven by spin-transfer-torque in high-TMR magnetic tunnel junctions

International Nuclear Information System (INIS)

Aurelio, D.; Torres, L.; Finocchio, G.

2009-01-01

This paper presents a numerical study of magnetization switching driven by spin-polarized current in high-TMR magnetic tunnel junctions (TMR>100%). The current density distribution throughout the free-layer is computed dynamically, by modeling the ferromagnet/insulator/ferromagnet trilayer as a series of parallel resistances. The validity of the main hypothesis, which states that the current flows perpendicular to the sample plane, has been verified by numerically solving the Poisson equation. Our results show that the nonuniform current density distribution is a source of asymmetry to the switching process. Furthermore, we observe that the reversal mechanisms are characterized by well-defined localized pre-switching oscillation modes.

Shapiro and parametric resonances in coupled Josephson junctions

International Nuclear Information System (INIS)

Gaafar, Ma A; Shukrinov, Yu M; Foda, A

2012-01-01

The effect of microwave irradiation on the phase dynamics of intrinsic Josephson junctions in high temperature superconductors is investigated. We compare the current-voltage characteristics for a stack of coupled Josephson junctions under external irradiation calculated in the framework of CCJJ and CCJJ+DC models.

Current Interview Trail Metrics in the Otolaryngology Match.

Science.gov (United States)

Cabrera-Muffly, Cristina; Chang, C W David; Puscas, Liana

2017-06-01

Objectives To identify how applicants to otolaryngology residency determine how to apply to, interview with, and rank programs on the interview trail and to determine the extent of the financial burden of the otolaryngology interview trail. Study Design Web-based survey distributed in March and April 2016. Setting Otolaryngology residency applicants throughout the United States. Subjects and Methods Applicants to otolaryngology residency during the 2016 match cycle and current otolaryngology residents were surveyed. Results Median number of applications, interview offers, interviews attended, and programs ranked was not different during the 2016 match and the previous 5 match years. The most important factor affecting the number of applications was the need to apply widely to ensure sufficient interview offers. The most common reason for declining an interview offer was scheduling conflict. Applicants during the 2016 match spent a median of $5400 applying and interviewing for otolaryngology residency. Conclusions Median number of applications, interview offers, interviews attended, and programs ranked has not changed. The most cited reason for applying to many programs was to increase the chances of matching, but this is not statistically likely to increase match success. We advocate for continued attempts to make the otolaryngology match process more transparent for both applicants and resident selection committees, but recognize that applicants are likely to continue to overapply for otolaryngology residency positions.

Fabrication of Schottky Junction Between Au and SrTiO3

Science.gov (United States)

Inoue, Akira; Izumisawa, Kei; Uwe, Hiromoto

2001-05-01

A Schottky junction with a high rectification ratio between Au and La-doped SrTiO3 has been fabricated using a simple surface treatment. Highly La-doped (5%) SrTiO3 single crystals are annealed in O2 atmosphere at about 1000°C for 1 h and etched in HNO3 for more than five min. The HNO3 etching is performed in a globe box containing N2 to prevent pollution from the air. After the treatment, Au is deposited on the SrTiO3 surface in a vacuum (˜ 10-7 Torr) with an e-gun evaporator. The current voltage characteristics of the junction have shown excellent rectification properties, although junctions using neither annealed nor etched SrTiO3 exhibit high leak current in reverse voltage. The rectification ratio of the junction at 1 V is more than six orders of magnitude and there is no hysteresis in the current voltage spectra. The logarithm of the current is linear with the forward bias voltage. The ideal factor of the junction is estimated to be about 1.68. These results suggest that, if prevented from being pollution by the air, a good Schottky junction can be obtained by easy processes such as annealing in oxygen atmosphere and surface etching with acid.

Reducing AC-Winding Losses in High-Current High-Power Inductors

DEFF Research Database (Denmark)

Nymand, Morten; Madawala, Udaya K.; Andersen, Michael Andreas E.

2009-01-01

Foil windings are preferable in high-current high-power inductors to realize compact designs and to reduce dc-current losses. At high frequency, however, proximity effect will cause very significant increase in ac resistance in multi-layer windings, and lead to high ac winding losses. This paper ...

Spatially resolved detection of mutually locked Josephson junctions in arrays

International Nuclear Information System (INIS)

Keck, M.; Doderer, T.; Huebener, R.P.; Traeuble, T.; Dolata, R.; Weimann, T.; Niemeyer, J.

1997-01-01

Mutual locking due to the internal coupling in two-dimensional arrays of Josephson junctions was investigated. The appearance of Shapiro steps in the current versus voltage curve of a coupled on-chip detector junction is used to indicate coherent oscillations in the array. A highly coherent state is observed for some range of the array bias current. By scanning the array with a low-power electron beam, mutually locked junctions remain locked while the unlocked junctions generate a beam-induced additional voltage drop at the array. This imaging technique allows the detection of the nonlocked or weakly locked Josephson junctions in a (partially) locked array state. copyright 1997 American Institute of Physics

Observation of weak coupling effects in Ba0.6 K0.4 Fe2 As2 junctions patterned across a naturally formed grain boundary

International Nuclear Information System (INIS)

Hong, Sung-Hak; Lee, Soon-Gul; Lee, Nam Hoon; Kang, Won Nam

2014-01-01

We have fabricated intergrain nanobridge junctions from a Ba 0.6 K 0.4 Fe 2 As 2 film and observed their weak coupling effects. We prepared the junction by patterning a nanobridge across a natural grain boundary by using a focused ion beam etching technique and studied their superconducting transition properties. The resistive transition showed three steps: the transitions of the bulk, the microbridge, and the junction grain boundary. Current–voltage curves showed typical Josephson junction characteristics, well-matched with the model of a resistively shunted junction incorporated with thermal fluctuations. Fitting data to theory revealed much larger current fluctuations than expected from the Johnson–Nyquist theorem. The junction showed a linear temperature dependence of the critical current and a constant normal-state resistance, indicating that the grain boundary played a role as a tunnel barrier with a very poor conductance. (paper)

High-Bandwidth, High-Efficiency Envelope Tracking Power Supply for 40W RF Power Amplifier Using Paralleled Bandpass Current Sources

DEFF Research Database (Denmark)

Høyerby, Mikkel Christian Wendelboe; Andersen, Michael Andreas E.

2005-01-01

This paper presents a high-performance power conversion scheme for power supply applications that require very high output voltage slew rates (dV/dt). The concept is to parallel 2 switching bandpass current sources, each optimized for its passband frequency space and the expected load current....... The principle is demonstrated with a power supply, designed for supplying a 40 W linear RF power amplifier for efficient amplification of a 16-QAM modulated data stream...

Design of a holographic micro-scale spectrum-splitting photovoltaic system

Science.gov (United States)

Wu, Yuechen; Vorndran, Shelby; Ayala Pelaez, Silvana; Russo, Juan M.; Kostuk, Raymond K.

2015-09-01

Micro-scale PV technology combines the high conversion efficiency of concentrated photovoltaics (CPV) with the low costs and the simple form of flat panel PV. Some of the benefits of micro-scale PV include: reduced semiconductor material usage; improved heat rejection capacity; and more versatile PV cell interconnect configurations. Spectrumsplitting is also a beneficial technique to increase the efficiency and reduce the cost of photovoltaic systems. It spatially separates the incident solar spectrum into spectral components and directs them to PV cells with matching bandgaps. This approach avoids the current and lattice matching problems that exist in tandem multi-junction systems. In this paper, we applied the ideas of spectrum-splitting in a micro-scale PV system, and demonstrated a holographic micro-scale spectrum-splitting photovoltaic system. This system consists of a volume transmission hologram in combination with a micro-lens array. An analysis methodology was developed to design the system and determine the performance of the resulting system. The spatial characteristics of the dispersed spectrum, the overall system conversion efficiency, and the improvement over best bandgap will be discussed.

Multi-stage Optimization of Matchings in Trees with Application to Kidney Exchange

KAUST Repository

Mankowski, Michal; Moshkov, Mikhail

2017-01-01

In this paper, we propose a method for multi-stage optimization of matchings in trees relative to different weight functions that assign positive weights to the edges of the trees. This method can be useful in transplantology where nodes of the tree

Ultrathin high band gap solar cells with improved efficiencies from the world's oldest photovoltaic material.

Science.gov (United States)

Todorov, Teodor K; Singh, Saurabh; Bishop, Douglas M; Gunawan, Oki; Lee, Yun Seog; Gershon, Talia S; Brew, Kevin W; Antunez, Priscilla D; Haight, Richard

2017-09-25

Selenium was used in the first solid state solar cell in 1883 and gave early insights into the photoelectric effect that inspired Einstein's Nobel Prize work; however, the latest efficiency milestone of 5.0% was more than 30 years ago. The recent surge of interest towards high-band gap absorbers for tandem applications led us to reconsider this attractive 1.95 eV material. Here, we show completely redesigned selenium devices with improved back and front interfaces optimized through combinatorial studies and demonstrate record open-circuit voltage (V OC ) of 970 mV and efficiency of 6.5% under 1 Sun. In addition, Se devices are air-stable, non-toxic, and extremely simple to fabricate. The absorber layer is only 100 nm thick, and can be processed at 200 ˚C, allowing temperature compatibility with most bottom substrates or sub-cells. We analyze device limitations and find significant potential for further improvement making selenium an attractive high-band-gap absorber for multi-junction device applications.Wide band gap semiconductors are important for the development of tandem photovoltaics. By introducing buffer layers at the front and rear side of solar cells based on selenium; Todorov et al., reduce interface recombination losses to achieve photoconversion efficiencies of 6.5%.

Van der Waals epitaxial growth and optoelectronics of large-scale WSe2/SnS2 vertical bilayer p-n junctions.

Science.gov (United States)

Yang, Tiefeng; Zheng, Biyuan; Wang, Zhen; Xu, Tao; Pan, Chen; Zou, Juan; Zhang, Xuehong; Qi, Zhaoyang; Liu, Hongjun; Feng, Yexin; Hu, Weida; Miao, Feng; Sun, Litao; Duan, Xiangfeng; Pan, Anlian

2017-12-04

High-quality two-dimensional atomic layered p-n heterostructures are essential for high-performance integrated optoelectronics. The studies to date have been largely limited to exfoliated and restacked flakes, and the controlled growth of such heterostructures remains a significant challenge. Here we report the direct van der Waals epitaxial growth of large-scale WSe 2 /SnS 2 vertical bilayer p-n junctions on SiO 2 /Si substrates, with the lateral sizes reaching up to millimeter scale. Multi-electrode field-effect transistors have been integrated on a single heterostructure bilayer. Electrical transport measurements indicate that the field-effect transistors of the junction show an ultra-low off-state leakage current of 10 -14 A and a highest on-off ratio of up to 10 7 . Optoelectronic characterizations show prominent photoresponse, with a fast response time of 500 μs, faster than all the directly grown vertical 2D heterostructures. The direct growth of high-quality van der Waals junctions marks an important step toward high-performance integrated optoelectronic devices and systems.

A current-mode multi-valued adder circuit for multi-operand addition

Science.gov (United States)

Cini, Ugur; Morgül, Avni

2011-06-01

Static CMOS logic circuits have a robust working performance. However, they generate excessive noise when the switching activity is high. Source-coupled logic (SCL) circuits can be an alternative for analogue-friendly design where constant current is driven from the power supply, independent of the switching activity of the circuit. In this work, a compact current-mode multi-operand adder cell, similar to SCL circuits, is designed. The circuit adds up seven input operands using a technique similar to the (7, 3) counter circuit, but with less active elements when compared to a conventional binary (7, 3) counter. The design has comparable power and delay characteristics compared to conventional SCL implementation. The proposed circuit requires only 69 transistors, where 96 transistors are required for the equivalent SCL implementation. Hence the circuit saves on both transistor count and interconnections. The design is optimised for low power operation of high performance arithmetic circuits. The proposed multi-operand adder circuit is designed in UMC 0.18 µm technology. As an example of application, an 8 × 8 bit multiplier circuit is designed and simulated using HSPICE.

Superconducting tunnel-junction refrigerator

International Nuclear Information System (INIS)

Melton, R.G.; Paterson, J.L.; Kaplan, S.B.

1980-01-01

The dc current through an S 1 -S 2 tunnel junction, with Δ 2 greater than Δ 1 , when biased with eV 1 +Δ 2 , will lower the energy in S 1 . This energy reduction will be shared by the phonons and electrons. This device is shown to be analogous to a thermoelectric refrigerator with an effective Peltier coefficient π* approx. Δ 1 /e. Tunneling calculations yield the cooling power P/sub c/, the electrical power P/sub e/ supplied by the bias supply, and the cooling efficiency eta=P/sub c//P/sub e/. The maximum cooling power is obtained for eV= +- (Δ 2 -Δ 1 ) and t 1 =T 1 /T/sub c/1 approx. 0.9. Estimates are made of the temperature difference T 2 -T 1 achievable in Al-Pb and Sn-Pb junctions with an Al 2 O 3 tunneling barrier. The performance of this device is shown to yield a maximum cooling efficiency eta approx. = Δ 1 /(Δ 2 -Δ 1 ) which can be compared with that available in an ideal Carnot refrigerator of eta=T 1 /(T 2 -T 1 ). The development of a useful tunnel-junction refrigerator requires a tunneling barrier with an effective thermal conductance per unit area several orders of magnitude less than that provided by the A1 2 O 3 barrier in the Al-Pb and Sn-Pb systems

Experimental study of liquid-immersion III–V multi-junction solar cells with dimethyl silicon oil under high concentrations

International Nuclear Information System (INIS)

Xin, Ganchao; Wang, Yiping; Sun, Yong; Huang, Qunwu; Zhu, Li

2015-01-01

Highlights: • Electrical performance of MJ solar cells immersed by silicon oil was studied under 500×. • Theoretical cell photocurrent losses caused by silicon oil absorption were estimated. • Cell performance changes operated in silicon oil (1.0–30.0 mm) were analyzed. • Critical silicon oil thickness on top of MJ solar cells was estimated to be 6.3 mm. - Abstract: In order to better apply direct liquid-immersion cooling (LIC) method in temperature control of solar cells in high concentrating photovoltaic (CPV) systems, electrical characteristics of GaInP/GaInAs/Ge triple-junction solar cells immersed in dimethyl silicon oil of 1.0–30.0 mm thickness were studied experimentally under 500 suns and 25 °C. Theoretical photocurrent losses caused by spectrum transmittance decrease from spectral absorption of silicon oil were estimated for three series sub-cells, and an in-depth analysis of the electrical performances changes of the operated cell in silicon oil was performed. Compared with cell performances without liquid-immersion, the conversion efficiency and the maximum output power of the immersed solar cell in silicon oil of 1.0 mm thickness has increased from 39.567% and 19.556 W to 40.572% and 20.083 W respectively. However, the cell electrical performances decrease with increasing silicon oil thickness in the range of 1.0–30.0 mm, and the efficiency and the maximum output power of the cell have become less than those without liquid-immersion when the silicon oil thickness exceeds 6.3 mm

Impedance matching for repetitive high voltage all-solid-state Marx generator and excimer DBD UV sources

Science.gov (United States)

Wang, Yonggang; Tong, Liqing; Liu, Kefu

2017-06-01

The purpose of impedance matching for a Marx generator and DBD lamp is to limit the output current of the Marx generator, provide a large discharge current at ignition, and obtain fast voltage rising/falling edges and large overshoot. In this paper, different impedance matching circuits (series inductor, parallel capacitor, and series inductor combined with parallel capacitor) are analyzed. It demonstrates that a series inductor could limit the Marx current. However, the discharge current is also limited. A parallel capacitor could provide a large discharge current, but the Marx current is also enlarged. A series inductor combined with a parallel capacitor takes full advantage of the inductor and capacitor, and avoids their shortcomings. Therefore, it is a good solution. Experimental results match the theoretical analysis well and show that both the series inductor and parallel capacitor improve the performance of the system. However, the series inductor combined with the parallel capacitor has the best performance. Compared with driving the DBD lamp with a Marx generator directly, an increase of 97.3% in radiant power and an increase of 59.3% in system efficiency are achieved using this matching circuit.

A metamaterial electromagnetic energy rectifying surface with high harvesting efficiency

Science.gov (United States)

Duan, Xin; Chen, Xing; Zhou, Lin

2016-12-01

A novel metamaterial rectifying surface (MRS) for electromagnetic energy capture and rectification with high harvesting efficiency is presented. It is fabricated on a three-layer printed circuit board, which comprises an array of periodic metamaterial particles in the shape of mirrored split rings, a metal ground, and integrated rectifiers employing Schottky diodes. Perfect impedance matching is engineered at two interfaces, i.e. one between free space and the surface, and the other between the metamaterial particles and the rectifiers, which are connected through optimally positioned vias. Therefore, the incident electromagnetic power is captured with almost no reflection by the metamaterial particles, then channeled maximally to the rectifiers, and finally converted to direct current efficiently. Moreover, the rectifiers are behind the metal ground, avoiding the disturbance of high power incident electromagnetic waves. Such a MRS working at 2.45 GHz is designed, manufactured and measured, achieving a harvesting efficiency up to 66.9% under an incident power density of 5 mW/cm2, compared with a simulated efficiency of 72.9%. This high harvesting efficiency makes the proposed MRS an effective receiving device in practical microwave power transmission applications.

A metamaterial electromagnetic energy rectifying surface with high harvesting efficiency

Directory of Open Access Journals (Sweden)

Xin Duan

2016-12-01

Full Text Available A novel metamaterial rectifying surface (MRS for electromagnetic energy capture and rectification with high harvesting efficiency is presented. It is fabricated on a three-layer printed circuit board, which comprises an array of periodic metamaterial particles in the shape of mirrored split rings, a metal ground, and integrated rectifiers employing Schottky diodes. Perfect impedance matching is engineered at two interfaces, i.e. one between free space and the surface, and the other between the metamaterial particles and the rectifiers, which are connected through optimally positioned vias. Therefore, the incident electromagnetic power is captured with almost no reflection by the metamaterial particles, then channeled maximally to the rectifiers, and finally converted to direct current efficiently. Moreover, the rectifiers are behind the metal ground, avoiding the disturbance of high power incident electromagnetic waves. Such a MRS working at 2.45 GHz is designed, manufactured and measured, achieving a harvesting efficiency up to 66.9% under an incident power density of 5 mW/cm2, compared with a simulated efficiency of 72.9%. This high harvesting efficiency makes the proposed MRS an effective receiving device in practical microwave power transmission applications.

Achieving 12.8% Efficiency by Simultaneously Improving Open-Circuit Voltage and Short-Circuit Current Density in Tandem Organic Solar Cells.

Science.gov (United States)

Qin, Yunpeng; Chen, Yu; Cui, Yong; Zhang, Shaoqing; Yao, Huifeng; Huang, Jiang; Li, Wanning; Zheng, Zhong; Hou, Jianhui

2017-06-01

Tandem organic solar cells (TOSCs), which integrate multiple organic photovoltaic layers with complementary absorption in series, have been proved to be a strong contender in organic photovoltaic depending on their advantages in harvesting a greater part of the solar spectrum and more efficient photon utilization than traditional single-junction organic solar cells. However, simultaneously improving open circuit voltage (V oc ) and short current density (J sc ) is a still particularly tricky issue for highly efficient TOSCs. In this work, by employing the low-bandgap nonfullerene acceptor, IEICO, into the rear cell to extend absorption, and meanwhile introducing PBDD4T-2F into the front cell for improving V oc , an impressive efficiency of 12.8% has been achieved in well-designed TOSC. This result is also one of the highest efficiencies reported in state-of-the-art organic solar cells. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Improving ion irradiated high Tc Josephson junctions by annealing: The role of vacancy-interstitial annihilation

International Nuclear Information System (INIS)

Sirena, M.; Matzen, S.; Bergeal, N.; Lesueur, J.; Faini, G.; Bernard, R.; Briatico, J.; Crete, D. G.

2007-01-01

The authors have studied the annealing effect in the transport properties of high T c Josephson junctions (JJs) made by ion irradiation. Low temperature annealing (80 deg. C) increases the JJ coupling temperature (T J ) and the I c R n product, where I c is the critical current and R n the normal resistance. They have found that the spread in JJ characteristics can be reduced by sufficient long annealing times, increasing the reproducibility of ion irradiated Josephson junctions. The characteristic annealing time and the evolution of the spread in the JJ characteristics can be explained by a vacancy-interstitial annihilation process rather than by an oxygen diffusion one

High peak-power kilohertz laser system employing single-stage multi-pass amplification

Science.gov (United States)

Shan, Bing; Wang, Chun; Chang, Zenghu

2006-05-23

The present invention describes a technique for achieving high peak power output in a laser employing single-stage, multi-pass amplification. High gain is achieved by employing a very small "seed" beam diameter in gain medium, and maintaining the small beam diameter for multiple high-gain pre-amplification passes through a pumped gain medium, then leading the beam out of the amplifier cavity, changing the beam diameter and sending it back to the amplifier cavity for additional, high-power amplification passes through the gain medium. In these power amplification passes, the beam diameter in gain medium is increased and carefully matched to the pump laser's beam diameter for high efficiency extraction of energy from the pumped gain medium. A method of "grooming" the beam by means of a far-field spatial filter in the process of changing the beam size within the single-stage amplifier is also described.

High Efficiency Quantum Dot III-V Multijunction Solar Cell for Space Power, Phase II

Data.gov (United States)

National Aeronautics and Space Administration — We are proposing to utilize quantum dots to develop a super high-efficiency multijunction III-V solar cell for space. In metamorphic triple junction space solar...

Oblique Multi-Camera Systems - Orientation and Dense Matching Issues

Science.gov (United States)

Rupnik, E.; Nex, F.; Remondino, F.

2014-03-01

The use of oblique imagery has become a standard for many civil and mapping applications, thanks to the development of airborne digital multi-camera systems, as proposed by many companies (Blomoblique, IGI, Leica, Midas, Pictometry, Vexcel/Microsoft, VisionMap, etc.). The indisputable virtue of oblique photography lies in its simplicity of interpretation and understanding for inexperienced users allowing their use of oblique images in very different applications, such as building detection and reconstruction, building structural damage classification, road land updating and administration services, etc. The paper reports an overview of the actual oblique commercial systems and presents a workflow for the automated orientation and dense matching of large image blocks. Perspectives, potentialities, pitfalls and suggestions for achieving satisfactory results are given. Tests performed on two datasets acquired with two multi-camera systems over urban areas are also reported.

Dissipative current in SIFS Josephson junctions

NARCIS (Netherlands)

Vasenko, A.; Kawabata, S.; Golubov, Alexandre Avraamovitch; Kupriyanov, M. Yu; Hekking, F.W.J.

2010-01-01

We investigate superconductor/insulator/ferromagnet/superconductor (SIFS) tunnel Josephson junctions in the dirty limit, using the quasiclassical theory. We consider the case of a strong tunnel barrier such that the left S layer and the right FS bilayer are decoupled. We calculate quantitatively the

Transverse Matching Progress Of The SNS Superconducting Linac

International Nuclear Information System (INIS)

Zhang, Yan; Cousineau, Sarah M.; Liu, Yun

2011-01-01

Experience using laser-wire beam profile measurement to perform transverse beam matching in the SNS superconducting linac is discussed. As the SNS beam power is ramped up to 1 MW, transverse beam matching becomes a concern to control beam loss and residual activation in the linac. In our experiments, however, beam loss is not very sensitive to the matching condition. In addition, we have encountered difficulties in performing a satisfactory transverse matching with the envelope model currently available in the XAL software framework. Offline data analysis from multi-particle tracking simulation shows that the accuracy of the current online model may not be sufficient for modeling the SC linac.

Competitive behavior of photons contributing to junction voltage jump in narrow band-gap semiconductor multi-quantum-well laser diodes at lasing threshold

Energy Technology Data Exchange (ETDEWEB)

Feng, Liefeng, E-mail: fengliefeng@tju.edu.cn, E-mail: lihongru@nankai.edu.cn; Yang, Xiufang; Wang, Cunda; Yao, Dongsheng [Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, Faculty of Science, Tianjin University, Tianjin 300072 (China); Li, Yang [Business and Vocational College of Hainan, Haikou 570203 (China); Li, Ding; Hu, Xiaodong [Research Center for Wide Band Gap Semiconductors, State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Li, Hongru, E-mail: fengliefeng@tju.edu.cn, E-mail: lihongru@nankai.edu.cn [State Key Laboratory for Medicinal Chemistry and Biology, College of Pharmacy, Nankai University, Tianjin 300071 (China)

2015-04-15

The junction behavior of different narrow band-gap multi-quantum-well (MQW) laser diodes (LDs) confirmed that the jump in the junction voltage in the threshold region is a general characteristic of narrow band-gap LDs. The relative change in the 1310 nm LD is the most obvious. To analyze this sudden voltage change, the threshold region is divided into three stages by I{sub th}{sup l} and I{sub th}{sup u}, as shown in Fig. 2; I{sub th}{sup l} is the conventional threshold, and as long as the current is higher than this threshold, lasing exists and the IdV/dI-I plot drops suddenly; I{sub th}{sup u} is the steady lasing point, at which the separation of the quasi-Fermi levels of electron and holes across the active region (V{sub j}) is suddenly pinned. Based on the evolutionary model of dissipative structure theory, the rate equations of the photons in a single-mode LD were deduced in detail at I{sub th}{sup l} and I{sub th}{sup u}. The results proved that the observed behavior of stimulated emission suddenly substituting for spontaneous emission, in a manner similar to biological evolution, must lead to a sudden increase in the injection carriers in the threshold region, which then causes the sudden increase in the junction voltage in this region.

Competitive behavior of photons contributing to junction voltage jump in narrow band-gap semiconductor multi-quantum-well laser diodes at lasing threshold

International Nuclear Information System (INIS)

Feng, Liefeng; Yang, Xiufang; Wang, Cunda; Yao, Dongsheng; Li, Yang; Li, Ding; Hu, Xiaodong; Li, Hongru

2015-01-01

The junction behavior of different narrow band-gap multi-quantum-well (MQW) laser diodes (LDs) confirmed that the jump in the junction voltage in the threshold region is a general characteristic of narrow band-gap LDs. The relative change in the 1310 nm LD is the most obvious. To analyze this sudden voltage change, the threshold region is divided into three stages by I th l and I th u , as shown in Fig. 2; I th l is the conventional threshold, and as long as the current is higher than this threshold, lasing exists and the IdV/dI-I plot drops suddenly; I th u is the steady lasing point, at which the separation of the quasi-Fermi levels of electron and holes across the active region (V j ) is suddenly pinned. Based on the evolutionary model of dissipative structure theory, the rate equations of the photons in a single-mode LD were deduced in detail at I th l and I th u . The results proved that the observed behavior of stimulated emission suddenly substituting for spontaneous emission, in a manner similar to biological evolution, must lead to a sudden increase in the injection carriers in the threshold region, which then causes the sudden increase in the junction voltage in this region

High current density 2D/3D MoS2/GaN Esaki tunnel diodes

Science.gov (United States)

Krishnamoorthy, Sriram; Lee, Edwin W.; Lee, Choong Hee; Zhang, Yuewei; McCulloch, William D.; Johnson, Jared M.; Hwang, Jinwoo; Wu, Yiying; Rajan, Siddharth

2016-10-01

The integration of two-dimensional materials such as transition metal dichalcogenides with bulk semiconductors offer interesting opportunities for 2D/3D heterojunction-based device structures without any constraints of lattice matching. By exploiting the favorable band alignment at the GaN/MoS2 heterojunction, an Esaki interband tunnel diode is demonstrated by transferring large area Nb-doped, p-type MoS2 onto heavily n-doped GaN. A peak current density of 446 A/cm2 with repeatable room temperature negative differential resistance, peak to valley current ratio of 1.2, and minimal hysteresis was measured in the MoS2/GaN non-epitaxial tunnel diode. A high current density of 1 kA/cm2 was measured in the Zener mode (reverse bias) at -1 V bias. The GaN/MoS2 tunnel junction was also modeled by treating MoS2 as a bulk semiconductor, and the electrostatics at the 2D/3D interface was found to be crucial in explaining the experimentally observed device characteristics.

Effect of proton-conduction in electrolyte on electric efficiency of multi-stage solid oxide fuel cells

Science.gov (United States)

Matsuzaki, Yoshio; Tachikawa, Yuya; Somekawa, Takaaki; Hatae, Toru; Matsumoto, Hiroshige; Taniguchi, Shunsuke; Sasaki, Kazunari

2015-07-01

Solid oxide fuel cells (SOFCs) are promising electrochemical devices that enable the highest fuel-to-electricity conversion efficiencies under high operating temperatures. The concept of multi-stage electrochemical oxidation using SOFCs has been proposed and studied over the past several decades for further improving the electrical efficiency. However, the improvement is limited by fuel dilution downstream of the fuel flow. Therefore, evolved technologies are required to achieve considerably higher electrical efficiencies. Here we present an innovative concept for a critically-high fuel-to-electricity conversion efficiency of up to 85% based on the lower heating value (LHV), in which a high-temperature multi-stage electrochemical oxidation is combined with a proton-conducting solid electrolyte. Switching a solid electrolyte material from a conventional oxide-ion conducting material to a proton-conducting material under the high-temperature multi-stage electrochemical oxidation mechanism has proven to be highly advantageous for the electrical efficiency. The DC efficiency of 85% (LHV) corresponds to a net AC efficiency of approximately 76% (LHV), where the net AC efficiency refers to the transmission-end AC efficiency. This evolved concept will yield a considerably higher efficiency with a much smaller generation capacity than the state-of-the-art several tens-of-MW-class most advanced combined cycle (MACC).

Distance parameterization for efficient seismic history matching with the ensemble Kalman Filter

NARCIS (Netherlands)

Leeuwenburgh, O.; Arts, R.

2012-01-01

The Ensemble Kalman Filter (EnKF), in combination with travel-time parameterization, provides a robust and flexible method for quantitative multi-model history matching to time-lapse seismic data. A disadvantage of the parameterization in terms of travel-times is that it requires simulation of

Printed freeform lens arrays on multi-core fibers for highly efficient coupling in astrophotonic systems.

Science.gov (United States)

Dietrich, Philipp-Immanuel; Harris, Robert J; Blaicher, Matthias; Corrigan, Mark K; Morris, Tim M; Freude, Wolfgang; Quirrenbach, Andreas; Koos, Christian

2017-07-24

Coupling of light into multi-core fibers (MCF) for spatially resolved spectroscopy is of great importance to astronomical instrumentation. To achieve high coupling efficiencies along with fill-fractions close to unity, micro-optical elements are required to concentrate the incoming light to the individual cores of the MCF. In this paper we demonstrate facet-attached lens arrays (LA) fabricated by two-photon polymerization. The LA provide close to 100% fill-fraction along with efficiencies of up to 73% (down to 1.4 dB loss) for coupling of light from free space into an MCF core. We show the viability of the concept for astrophotonic applications by integrating an MCF-LA assembly in an adaptive-optics test bed and by assessing its performance as a tip/tilt sensor.

Treat a new and efficient match algorithm for AI production system

CERN Document Server

Miranker, Daniel P

1988-01-01

TREAT: A New and Efficient Match Algorithm for AI Production Systems describes the architecture and software systems embodying the DADO machine, a parallel tree-structured computer designed to provide significant performance improvements over serial computers of comparable hardware complexity in the execution of large expert systems implemented in production system form.This book focuses on TREAT as a match algorithm for executing production systems that is presented and comparatively analyzed with the RETE match algorithm. TREAT, originally designed specifically for the DADO machine architect

Study of the photo-detection efficiency of FBK High-Density silicon photomultipliers

International Nuclear Information System (INIS)

Zappalà, G.; Regazzoni, V.; Acerbi, F.; Ferri, A.; Gola, A.; Paternoster, G.; Zorzi, N.; Piemonte, C.

2016-01-01

This work presents a study of the factors contributing to the Photo-Detection Efficiency of Silicon Photomultipliers (SiPMs): Quantum Efficiency, Triggering Probability and Fill Factor. Two different SiPM High-Density technologies are tested, NUV-HD, based on n-on-p junction, and RGB-HD, based on p-on-n junction, developed at FBK, Trento. The quantum efficiency was measured on photodiodes produced along with the SiPMs. The triggering probability, as a function of wavelength and bias voltage, was measured on circular Single Photon Avalanche Diodes (SPADs) with 100% fill factor. Square SPADs, having the same layout of single SiPM cells, were studied to measure the effective fill factor and compare it to the nominal value. The comparison of the circular and square SPADs allows to get the transition region size between the effective active area of the cell and the one defined by the layout.

High-performance single CdS nanowire (nanobelt) Schottky junction solar cells with Au/graphene Schottky electrodes.

Science.gov (United States)

Ye, Yu; Dai, Yu; Dai, Lun; Shi, Zujin; Liu, Nan; Wang, Fei; Fu, Lei; Peng, Ruomin; Wen, Xiaonan; Chen, Zhijian; Liu, Zhongfan; Qin, Guogang

2010-12-01

High-performance single CdS nanowire (NW) as well as nanobelt (NB) Schottky junction solar cells were fabricated. Au (5 nm)/graphene combined layers were used as the Schottky contact electrodes to the NWs (NBs). Typical as-fabricated NW solar cell shows excellent photovoltaic behavior with an open circuit voltage of ∼0.15 V, a short circuit current of ∼275.0 pA, and an energy conversion efficiency of up to ∼1.65%. The physical mechanism of the combined Schottky electrode was discussed. We attribute the prominent capability of the devices to the high-performance Schottky combined electrode, which has the merits of low series resistance, high transparency, and good Schottky contact to the CdS NW (NB). Besides, a promising site-controllable patterned graphene transfer method, which has the advantages of economizing graphene material and free from additional etching process, was demonstrated in this work. Our results suggest that semiconductor NWs (NBs) are promising materials for novel solar cells, which have potential application in integrated nano-optoelectronic systems.

Developmental activities of the 18 GHz high temperature superconducting ECR ion source, PKDELIS, for the high current injector at IUAC

International Nuclear Information System (INIS)

Rodrigues, G.; Lakshmy, P.S.; Mathur, Y.; Ahuja, R.; Dutt, R.N.; Rao, U.K.; Mandal, A.; Kanjilal, D.; Roy, A.

2011-01-01

Various developmental activities of the 18 GHz High Temperature Superconducting ECR Ion Source, PKDELIS have been carried out as a part of the High Current Injector programme. Emittance measurements using a simple technique has given important inputs for the design of downstream accelerators like RFQ, DTL and low beta cavities. The techniques allows for emittance matching by varying the emittance parameters to match with the acceptance of the accelerators. X-ray Beamstrahlung measurements from ECR plasma has shown that it is a diagnostic tool to optimize the production of highly charged ions. The ion optics through the low energy beam transport section has been benchmarked with various codes and given a handle to optimize the transmission. New techniques to improve the extraction efficiency of highly charged ions has been developed. (author)

Flux flow in high-Tc Josephson junctions

DEFF Research Database (Denmark)

Filatrella, G.; Pedersen, Niels Falsig

1993-01-01

The possibility of achieving fluxon nucleation in nonhysteretic high-T(c) Josephson junctions due to the presence of inhomogeneities is investigated numerically. For a large range of parameters the I- V characteristics in presence of such discontinuities show a strong similarity with those obtain...

Impurity scattering effect on charge transport in high-Tc cuprate junctions

International Nuclear Information System (INIS)

Tanaka, Y.; Asano, Y.; Kashiwaya, S.

2004-01-01

It is known that the zero-bias conductance peak (ZBCP) is expected in tunneling spectra of normal-metal/high-Tc cuprate junctions because of the formation of the midgap Andreev resonant states (MARS) at junction interfaces. In the present review, we report the recent theoretical study of impurity scattering effects on the tunneling spectroscopy. In the former part of the present paper, we discuss impurity effects in normal metal. We calculate tunneling conductance for diffusive normal metal (DN)/high Tc cuprate junctions based on the Keldysh Green's function technique. Besides the ZBCP due to the MARS, we can expect ZBCP caused by the different origin, i.e., the coherent Andreev reflection (CAR) assisted by the proximity effect in DN. Their relative importance depends on the angle a between the interface normal and the crystal axis of high-Tc superconductors. At α = 0, we find the ZBCP by the CAR for low transparent junctions with small Thouless energies in DN; this is similar to the case of diffusive normal metal/insulator/s-wave superconductor junctions. Under increase of α from zero to π/4, the contribution of MARS to ZBCP becomes more prominent and the effect of the CAR is gradually suppressed. Such complex spectral features would be observable in conductance spectra of high-Tc junctions at very low temperatures. In the latter part of our paper, we study impurity effects in superconductors. We consider impurities near the junction interface on the superconductor side. The conductance is calculated from the Andreev and the normal reflection coefficients which are estimated by using the single-site approximation in an analytic calculation and by the recursive Green function method in a numerical simulation. We find splitting of the ZBCP in the presence of the time reversal symmetry. Thus the zero-field splitting of ZBCP in the experiment does not perfectly prove an existence of broken time reversal symmetry state

A one-loop study of matching conditions for static-light flavor currents

Energy Technology Data Exchange (ETDEWEB)

Hesse, Dirk [Deutsches Elektronen-Synchrotron (DESY), Zeuthen (Germany). John von Neumann-Inst. fuer Computing NIC; Parma Univ. (Italy); Sommer, Rainer [Deutsches Elektronen-Synchrotron (DESY), Zeuthen (Germany). John von Neumann-Inst. fuer Computing NIC; Collaboration: ALPHA Collaboration

2012-11-15

Heavy Quark Effective Theory (HQET) computations of semi-leptonic decays, e.g. B{yields}{pi}l{nu}, require the knowledge of the parameters in the effective theory for all components of the heavy-light flavor currents. So far non-perturbative matching conditions have been employed only for the time component of the axial current. Here we perform a check of matching conditions for the time component of the vector current and the spatial component of the axial vector current up to one-loop order of perturbation theory and to lowest order of the 1/m-expansion. We find that the proposed observables have small higher order terms in the 1/m-series and are thus excellent candidates for a non-perturbative matching procedure.

Research on stable, high-efficiency, amorphous silicon multijunction modules. Annual subcontract report, 1 May 1991--30 April 1992

Energy Technology Data Exchange (ETDEWEB)

Catalano, A.; Bennett, M.; Chen, L.; D`Aiello, R.; Fieselmann, B.; Li, Y.; Newton, J.; Podlesny, R.; Yang, L. [Solarex Corp., Newtown, PA (United States). Thin Film Div.

1992-08-01

This report describes work to demonstrate a multijunction module with a ``stabilized`` efficiency (600 h, 50{degrees}C, AM1.5) of 10.5%. Triple-junction devices and modules using a-Si:H alloys with carbon and germanium were developed to meet program goals. ZnO was used to provide a high optical transmission front contact. Proof of concept was obtained for several important advances deemed to be important for obtaining high (12.5%) stabilized efficiency. They were (1) stable, high-quality a-SiC:H devices and (2) high-transmission, textured ZnO. Although these developments were not scaled up and included in modules, triple-junction module efficiencies as high as 10.85% were demonstrated. NREL measured 9.62% and 9.00% indoors and outdoors, respectively. The modules are expected to lose no more than 20% of their initial performance. 28 refs.

delta-biased Josephson tunnel junctions

DEFF Research Database (Denmark)

Monaco, R.; Mygind, Jesper; Koshelet, V.

2010-01-01

Abstract: The behavior of a long Josephson tunnel junction drastically depends on the distribution of the dc bias current. We investigate the case in which the bias current is fed in the central point of a one-dimensional junction. Such junction configuration has been recently used to detect...... the persistent currents circulating in a superconducting loop. Analytical and numerical results indicate that the presence of fractional vortices leads to remarkable differences from the conventional case of uniformly distributed dc bias current. The theoretical findings are supported by detailed measurements...

Measurement technology of RF interference current in high current system

Science.gov (United States)

Zhao, Zhihua; Li, Jianxuan; Zhang, Xiangming; Zhang, Lei

2018-06-01

Current probe is a detection method commonly used in electromagnetic compatibility. With the development of power electronics technology, the power level of power conversion devices is constantly increasing, and the power current of the electric energy conversion device in the electromagnetic launch system can reach 10kA. Current probe conventionally used in EMC (electromagnetic compatibility) detection cannot meet the test requirements on high current system due to the magnetic saturation problem. The conventional high current sensor is also not suitable for the RF (Radio Frequency) interference current measurement in high current power device due to the high noise level in the output of active amplifier. In this paper, a passive flexible current probe based on Rogowski coil and matching resistance is proposed that can withstand high current and has low noise level, to solve the measurement problems of interference current in high current power converter. And both differential mode and common mode current detection can be easily carried out with the proposed probe because of the probe's flexible structure.

Composite multi-lobe descriptor for cross spectral face recognition: matching active IR to visible light images

Science.gov (United States)

Cao, Zhicheng; Schmid, Natalia A.

2015-05-01

Matching facial images across electromagnetic spectrum presents a challenging problem in the field of biometrics and identity management. An example of this problem includes cross spectral matching of active infrared (IR) face images or thermal IR face images against a dataset of visible light images. This paper describes a new operator named Composite Multi-Lobe Descriptor (CMLD) for facial feature extraction in cross spectral matching of near-infrared (NIR) or short-wave infrared (SWIR) against visible light images. The new operator is inspired by the design of ordinal measures. The operator combines Gaussian-based multi-lobe kernel functions, Local Binary Pattern (LBP), generalized LBP (GLBP) and Weber Local Descriptor (WLD) and modifies them into multi-lobe functions with smoothed neighborhoods. The new operator encodes both the magnitude and phase responses of Gabor filters. The combining of LBP and WLD utilizes both the orientation and intensity information of edges. Introduction of multi-lobe functions with smoothed neighborhoods further makes the proposed operator robust against noise and poor image quality. Output templates are transformed into histograms and then compared by means of a symmetric Kullback-Leibler metric resulting in a matching score. The performance of the multi-lobe descriptor is compared with that of other operators such as LBP, Histogram of Oriented Gradients (HOG), ordinal measures, and their combinations. The experimental results show that in many cases the proposed method, CMLD, outperforms the other operators and their combinations. In addition to different infrared spectra, various standoff distances from close-up (1.5 m) to intermediate (50 m) and long (106 m) are also investigated in this paper. Performance of CMLD is evaluated for of each of the three cases of distances.

Optimal Materials and Deposition Technique Lead to Cost-Effective Solar Cell with Best-Ever Conversion Efficiency (Fact Sheet)

Energy Technology Data Exchange (ETDEWEB)

2012-07-01

This fact sheet describes how the SJ3 solar cell was invented, explains how the technology works, and why it won an R&D 100 Award. Based on NREL and Solar Junction technology, the commercial SJ3 concentrator solar cell - with 43.5% conversion efficiency at 418 suns - uses a lattice-matched multijunction architecture that has near-term potential for cells with {approx}50% efficiency. Multijunction solar cells have higher conversion efficiencies than any other type of solar cell. But developers of utility-scale and space applications crave even better efficiencies at lower costs to be both cost-effective and able to meet the demand for power. The SJ3 multijunction cell, developed by Solar Junction with assistance from foundational technological advances by the National Renewable Energy Laboratory, has the highest efficiency to date - almost 2% absolute more than the current industry standard multijunction cell-yet at a comparable cost. So what did it take to create this cell having 43.5% efficiency at 418-sun concentration? A combination of materials with carefully designed properties, a manufacturing technique allowing precise control, and an optimized device design.

Fine-tuning of the spectral collection efficiency in multilayer junctions

International Nuclear Information System (INIS)

Fernandes, M.; Fantoni, A.; Louro, P.; Lavareda, G.; Carvalho, N.; Schwarz, R.; Vieira, M.

2006-01-01

a-SiC:H/a-Si:H p-i-n/p-i-n tandem cells with different i-layer thickness have been produced by PECVD and tested for a proper fine-tuning of the spectral collection efficiency. The tandem structure takes advantage on the radiation wavelength selectivity due to the different light penetration depth inside the a-Si:H and a-SiC:H absorbers. The thickness and the absorption coefficient of the front p-i-n cell were optimized for blue collection and red transmittance and the thickness of the back one adjusted to achieve full absorption in the green and high collection in the red spectral ranges. Preliminary results show that device optimization for red detection can be obtained by reducing the thickness of the internal recombination junction while by increasing the intrinsic layer of the bottom a-Si:H cell, a better detection of the green color under appropriated applied voltages is foreseen. The physics behind the device functioning is explained through a numerical simulation of the internal electrical configuration of the device in dark and under different wavelength irradiations. Considerations about conduction band offsets, electrical field profiles and inversion layers will be taken into account to explain the optical and voltage bias dependence of the spectral response. Experimental results about the spectral collection efficiency are presented and discussed from the point of view of the color sensor applications

First-principles spin-transfer torque in CuMnAs |GaP |CuMnAs junctions

Science.gov (United States)

Stamenova, Maria; Mohebbi, Razie; Seyed-Yazdi, Jamileh; Rungger, Ivan; Sanvito, Stefano

2017-02-01

We demonstrate that an all-antiferromagnetic tunnel junction with current perpendicular to the plane geometry can be used as an efficient spintronic device with potential high-frequency operation. By using state-of-the-art density functional theory combined with quantum transport, we show that the Néel vector of the electrodes can be manipulated by spin-transfer torque. This is staggered over the two different magnetic sublattices and can generate dynamics and switching. At the same time the different magnetization states of the junction can be read by standard tunneling magnetoresistance. Calculations are performed for CuMnAs |GaP |CuMnAs junctions with different surface terminations between the antiferromagnetic CuMnAs electrodes and the insulating GaP spacer. We find that the torque remains staggered regardless of the termination, while the magnetoresistance depends on the microscopic details of the interface.

ALTERNATIVE MATERIALS FOR RAMP-EDGE SNS JUNCTIONS

International Nuclear Information System (INIS)