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Sample records for current reactive magnetron

  1. Reactive sputtering of δ-ZrH{sub 2} thin films by high power impulse magnetron sputtering and direct current magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Högberg, Hans, E-mail: hans.hogberg@liu.se; Tengdelius, Lina; Eriksson, Fredrik; Broitman, Esteban; Lu, Jun; Jensen, Jens; Hultman, Lars [Department of Physics, Chemistry, and Biology (IFM), Linköping University, SE-581 83 Linköping (Sweden); Samuelsson, Mattias [Impact Coatings AB, Westmansgatan 29, SE-582 16 Linköping (Sweden)

    2014-07-01

    Reactive sputtering by high power impulse magnetron sputtering (HiPIMS) and direct current magnetron sputtering (DCMS) of a Zr target in Ar/H{sub 2} plasmas was employed to deposit Zr-H films on Si(100) substrates, and with H content up to 61 at. % and O contents typically below 0.2 at. % as determined by elastic recoil detection analysis. X-ray photoelectron spectroscopy reveals a chemical shift of ∼0.7 eV to higher binding energies for the Zr-H films compared to pure Zr films, consistent with a charge transfer from Zr to H in a zirconium hydride. X-ray diffraction shows that the films are single-phase δ-ZrH{sub 2} (CaF{sub 2} type structure) at H content >∼55 at. % and pole figure measurements give a 111 preferred orientation for these films. Scanning electron microscopy cross-section images show a glasslike microstructure for the HiPIMS films, while the DCMS films are columnar. Nanoindentation yield hardness values of 5.5–7 GPa for the δ-ZrH{sub 2} films that is slightly harder than the ∼5 GPa determined for Zr films and with coefficients of friction in the range of 0.12–0.18 to compare with the range of 0.4–0.6 obtained for Zr films. Wear resistance testing show that phase-pure δ-ZrH{sub 2} films deposited by HiPIMS exhibit up to 50 times lower wear rate compared to those containing a secondary Zr phase. Four-point probe measurements give resistivity values in the range of ∼100–120 μΩ cm for the δ-ZrH{sub 2} films, which is slightly higher compared to Zr films with values in the range 70–80 μΩ cm.

  2. Process stabilization by peak current regulation in reactive high-power impulse magnetron sputtering of hafnium nitride

    Science.gov (United States)

    Shimizu, T.; Villamayor, M.; Lundin, D.; Helmersson, U.

    2016-02-01

    A simple and cost effective approach to stabilize the sputtering process in the transition zone during reactive high-power impulse magnetron sputtering (HiPIMS) is proposed. The method is based on real-time monitoring and control of the discharge current waveforms. To stabilize the process conditions at a given set point, a feedback control system was implemented that automatically regulates the pulse frequency, and thereby the average sputtering power, to maintain a constant maximum discharge current. In the present study, the variation of the pulse current waveforms over a wide range of reactive gas flows and pulse frequencies during a reactive HiPIMS process of Hf-N in an Ar-N2 atmosphere illustrates that the discharge current waveform is a an excellent indicator of the process conditions. Activating the reactive HiPIMS peak current regulation, stable process conditions were maintained when varying the N2 flow from 2.1 to 3.5 sccm by an automatic adjustment of the pulse frequency from 600 Hz to 1150 Hz and consequently an increase of the average power from 110 to 270 W. Hf-N films deposited using peak current regulation exhibited a stable stoichiometry, a nearly constant power-normalized deposition rate, and a polycrystalline cubic phase Hf-N with (1 1 1)-preferred orientation over the entire reactive gas flow range investigated. The physical reasons for the change in the current pulse waveform for different process conditions are discussed in some detail.

  3. Evolution of the structural and optical properties of silver oxide films with different stoichiometries deposited by direct-current magnetron reactive sputtering

    Institute of Scientific and Technical Information of China (English)

    Zhao Meng-Ke; Liang Yan; Gao Xiao-Yong; Chen Chao; Chen Xian-Mei; Zhao Xian-Wei

    2012-01-01

    Nitrogen doping of silver oxide (AgχO) film is necessary for its application in transparent conductive film and diodes because intrinsic AgχO film is a p-type semiconductor with poor conductivity.In this work,a series of AgχO films is deposited on glass substrates by direct-current magnetron reactive sputtering at different flow ratios (FRs) of nitrogen to O2.Evolutions of the structure,the reflectivity,and the transmissivity of the film are studied by X-ray diffractometry and sphectrophotometry,respectively.The specular transmissivity and the specular reflectivity of the film decreasing with FR increasing can be attributed to the evolution of the phase structure of the film.The nitrogen does not play the role of an acceptor dopant in the film deposition.

  4. Growth of nanocrystalline TiO{sub 2} thin films and crystal anisotropy of anatase phase deposited by direct current reactive magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Sarma, Bimal K., E-mail: sarmabimal@gmail.com [Physical Sciences Division, Institute of Advanced Study in Science and Technology, Paschim Boragaon, Guwahati 781035 (India); Department of Physics, Gauhati University, Gopinath Bordoloi Nagar, Guwahati 781014 (India); Pal, Arup R.; Bailung, Heremba; Chutia, Joyanti [Physical Sciences Division, Institute of Advanced Study in Science and Technology, Paschim Boragaon, Guwahati 781035 (India)

    2013-05-15

    This work describes the growth and elastic anisotropy of nanocrystalline TiO{sub 2} films deposited by direct current reactive magnetron sputtering. The films are nanocrystalline in the gas pressure range 0.4–1.0 Pa even in the absence of substrate bias and substrate heating. It has been observed that gas pressure has a considerable effect on the phase evolution of TiO{sub 2} and at a higher pressure, nanocrystalline anatase can be produced with a greater crystallinity and dense surface. X-ray diffraction line profile analysis of anatase TiO{sub 2} has been performed and the integral breadth expressions of line broadening due to the domain size and lattice microstrain are combined on the basis of the Williamson–Hall (WH) method. The Miller indices dependence of Young's modulus is estimated on the basis of the Reuss approximation for polycrystalline aggregates. Young's modulus shows strong anisotropy. The anisotropic nature of the elastic medium has been introduced in the classical WH plot under the uniform stress deformation model (USDM) and uniform deformation energy density model (UDEDM). USDM represents the better fit of the experimental data. - Highlights: ► Growth of nanocrystalline TiO{sub 2} films prepared by reactive magnetron sputtering. ► Anatase grains grow much faster than rutile grains. ► Near band edge luminescence of TiO{sub 2} due to oxygen vacancies. ► Facile X-ray line profile analysis for nanocrystalline thin films. ► Elastic anisotropy causes X-ray diffraction line broadening of anatase TiO{sub 2}.

  5. Performance evaluation of reactive direct current unbalanced magnetron sputter deposited nanostructured TiN coated high-speed steel drill bits

    Indian Academy of Sciences (India)

    Harish C Barshilia; K S Rajam

    2007-12-01

    The stainless steels, in general, are considered to be difficult-to-machine materials. In order to machine these materials the surface of the tool is generally coated with physical vapour deposition (PVD) hard coatings such as titanium nitride (TiN), titanium aluminum nitride (TiAlN), etc. The adhesion is of vital importance for the performance of tools coated with PVD coatings. Proper surface treatments (in situ and ex situ) are required to achieve highly adherent PVD coatings on tools. We have deposited nanostructured TiN coatings on high-speed steel (HSS) drill bits and mild steel substrates using an indigenously built semi-industrial fourcathode reactive direct current (d.c.) unbalanced magnetron sputtering system. Various treatments have been given to the substrates for improved adhesion of the TiN coatings. The process parameters have been optimized to achieve highly adherent thick good quality TiN coatings. These coatings have been characterized using X-ray diffraction, nanoindentation and atomic force microscopy techniques. The performance of the coated HSS drill bits is evaluated by drilling a 13 mm thick 304 stainless steel plate under wet conditions. The results show significant improvement in the performance of the TiN coated HSS drill bits.

  6. Plasma diagnostics of an Ar/NH{sub 3} direct-current reactive magnetron sputtering discharge for SiN{sub x} deposition

    Energy Technology Data Exchange (ETDEWEB)

    Henry, F., E-mail: Fhenry@ulb.ac.be; Duluard, C.Y.; Batan, A.; Reniers, F., E-mail: Freniers@ulb.ac.be

    2012-08-01

    We have performed the deposition of silicon nitride thin films with the DC reactive magnetron sputtering technique from a silicon target in an Ar/NH{sub 3} gas mixture. Usually, the control of the process is carried out with discharge voltage measurements, which give information on the nature of the sputtering mode: metallic or reactive. To have a more complete view of the sputtering process, we have performed X-ray photoelectron spectroscopy (XPS) to investigate the chemistry of the silicon target racetrack and optical emission spectroscopy (OES) to investigate the Ar/NH{sub 3} gas phase near the target surface. When the NH{sub 3} molar fraction is increased, XPS measurements reveal the progressive formation of a silicon nitride layer on the target surface, thereby demonstrating a continuous transition to the reactive mode. OES measurements have highlighted the presence of several species which, according to the literature, are believed to be directly sputtered from the surface of the target: Si, SiH and SiN. Their intensities could be related to the chemical state of the target surface and provide a better insight into the sputtering process on the target surface. - Highlights: Black-Right-Pointing-Pointer Plasma diagnostics of Ar/NH{sub 3} DC reactive magnetron sputtering. Black-Right-Pointing-Pointer Multiple diagnostic techniques. Black-Right-Pointing-Pointer Poisoning of the target by formation of silicon nitride layer. Black-Right-Pointing-Pointer Relation between the light emitted by the plasma and the surface state of the target.

  7. GAS FLOW CONTROL SYSTEM IN REACTIVE MAGNETRON SPUTTERING TECHNOLOGY

    Directory of Open Access Journals (Sweden)

    I. M. Klimovich

    2015-01-01

    Full Text Available  It is known that the discharge parameters and the chemical composition of the particles flux impinging onto the substrate during a reactive magnetron sputtering are unstable. As a result spontaneous transitions between the «metal» mode of the target surface and the «poisoned» mode of the target surface have been observed. This leads to nonrepeatability of the coating compositions from process to process. The aim of this work is to design a gas flow control system for reactive sputtering processes. The control system allows to maintain a steady nonequilibrium state of the magnetron discharge in transition mode where the chemical state of the target surface is unstable. The intensities of spectral lines of the discharge spectrum are proposed as control parameters. Photodiode detectors were used for registration of intensities of spectral lines. A gas flow control system regulates argon and reactive gas flow automatically, using feedback signals from photodiode detectors on the intensities of the spectral lines, vacuum gauge, ion current sensor, sensors of discharge current and voltage. As an example, the process of reactive magnetron Ti-Al-N deposition is considered. The following discharge parameters are controlled during sputtering a composite target based on Ti with Al cylindrical inserts: current, voltage, total pressure of a gas mixture, substrate temperature, bias voltage and current of the substrate. Nitrogen flow was controlled by the spectral line intensity of titanium TiI 506,5 nm. The value of the line intensity is connected with the value of reactivity. Elemental composition and structure of the Ti-Al-N coatings were studied using Rutherford backscattering spectroscopy, scanning electron microscopy and X-ray diffraction. It was found, that stoichiometric Ti-Al-N coatings have a globular structure, enhanced hardness and low friction coefficient in contrast to Ti-Al-N coatings with nonstoichiometric composition, which have a

  8. Deposition of the TiN and TiO2 films in the inverted cylindrical direct-current magnetron by a reactive sputtering

    Directory of Open Access Journals (Sweden)

    Kostin E. G.

    2008-08-01

    Full Text Available Results of research of optical radiation of discharge plasma in a wave range 350 – 820 nm and discharge voltage of an inverted cylindrical magnetron at various flows of reactive gases (N2, О2 are presented. Changes of discharge voltage have features which can be compared to a films composition and with character of changes of intensity of spectral lines of titanium atoms and molecules of reacting gases. It is shown, that the control of a deposition of TiN and TiO2 films it is possible to carry out, both with the help of measuring of discharge voltage, and with the help of the optical control of intensity of Ti, N2, O2 lines emitted by plasma. The optical control simultaneously several components of the gas medium is more informative. Optimum conditions of synthesis of stoichiometric TiN and TiO2 films are determined. The X-ray analysis was carried out, the microhardness of TiN films and refractive index of TiO2 films, received in optimum requirements, was measured.

  9. RF Reactive Magnetron Sputter Deposition of Silicon Sub-Oxides

    NARCIS (Netherlands)

    Hattum, E.D. van

    2007-01-01

    RF reactive magnetron plasma sputter deposition of silicon sub oxide E.D. van Hattum Department of Physics and Astronomy, Faculty of Sciences, Utrecht University The work described in the thesis has been inspired and stimulated by the use of SiOx layers in the direct inductive printing technology, w

  10. The existence of a double S-shaped process curve during reactive magnetron sputtering

    Science.gov (United States)

    Schelfhout, R.; Strijckmans, K.; Depla, D.

    2016-09-01

    The four dimensional parameter space (discharge voltage and current and reactive gas flow and pressure) related to a reactive Ar/O2 DC magnetron discharge with an aluminum target and constant pumping speed was acquired by measuring current-voltage characteristics at different oxygen flows. The projection onto the pressure-flow plane allows us to study the well-known S-shaped process curve. This experimental procedure guarantees no time dependent effects on the result. The obtained process curve appears not to be unique but rather two significantly different S-shaped curves are noticed which depend on the history of the steady state target condition. As such, this result has not only an important impact on the fundamental description of the reactive sputtering process but it can also have its consequences on typical feedback control systems for the operation in the transition regime of the hysteresis during reactive magnetron sputtering.

  11. Reactive high power impulse magnetron sputtering: combining simulation and experiment

    Science.gov (United States)

    Kozak, Tomas; Vlcek, Jaroslav

    2016-09-01

    Reactive high-power impulse magnetron sputtering (HiPIMS) has recently been used for preparation of various oxide films with high application potential, such as TiO2, ZrO2, Ta2O5, HfO2, VO2. Using our patented method of pulsed reactive gas flow control with an optimized reactive gas inlet, we achieved significantly higher deposition rates compared to typical continuous dc magnetron depositions. We have developed a time-dependent model of the reactive HiPIMS. The model includes a depth-resolved description of the sputtered target (featuring sputtering, implantation and knock-on implantation processes) and a parametric description of the discharge plasma (dissociation of reactive gas, ionization and return of sputtered atoms and gas rarefaction). The model uses a combination of experimental and simulation data as input. We have calculated the composition of the target and substrate for several deposition conditions. The simulations predict a reduced compound coverage of the target in HiPIMS compared to the continuous dc sputtering regime which explains the increased deposition rate. The simulations show that an increased dissociation of oxygen in a HiPIMS discharge is beneficial to achieve stoichiometric films on the substrate at high deposition rates.

  12. Elementary surface processes during reactive magnetron sputtering of chromium

    Energy Technology Data Exchange (ETDEWEB)

    Monje, Sascha; Corbella, Carles, E-mail: carles.corbella@rub.de; Keudell, Achim von [Research Group Reactive Plasmas, Ruhr-University Bochum, Universitystr. 150, 44801 Bochum (Germany)

    2015-10-07

    The elementary surface processes occurring on chromium targets exposed to reactive plasmas have been mimicked in beam experiments by using quantified fluxes of Ar ions (400–800 eV) and oxygen atoms and molecules. For this, quartz crystal microbalances were previously coated with Cr thin films by means of high-power pulsed magnetron sputtering. The measured growth and etching rates were fitted by flux balance equations, which provided sputter yields of around 0.05 for the compound phase and a sticking coefficient of O{sub 2} of 0.38 on the bare Cr surface. Further fitted parameters were the oxygen implantation efficiency and the density of oxidation sites at the surface. The increase in site density with a factor 4 at early phases of reactive sputtering is identified as a relevant mechanism of Cr oxidation. This ion-enhanced oxygen uptake can be attributed to Cr surface roughening and knock-on implantation of oxygen atoms deeper into the target. This work, besides providing fundamental data to control oxidation state of Cr targets, shows that the extended Berg's model constitutes a robust set of rate equations suitable to describe reactive magnetron sputtering of metals.

  13. Investigation of Texture and Residual Stresses in Reactive Magnetron Sputtered TiN coatings on M2 Steel Substrates

    Science.gov (United States)

    Mirchev, R.; Iordanova, I.; Antonov, V.; Kelly, P. J.

    2007-04-01

    The development of crystallographic texture and residual macro-stresses during the growth from 500 nm to 4000 nm of TiN films applied by reactive Closed Field Unbalanced Magnetron Sputtering (CFUBMS) on M2 tool steel at three direct target currents (Id) (namely 4, 6 and 8A) have been analyzed via X-ray diffraction.

  14. Synthesis of Alumina Thin Films Using Reactive Magnetron Sputtering Method

    Science.gov (United States)

    Angarita, G.; Palacio, C.; Trujillo, M.; Arroyave, M.

    2017-06-01

    Alumina (Al2O3) thin films were deposited on Si (100) by Magnetron Sputtering in reactive conditions between an aluminium target and oxygen 99.99% pure. The plasma was formed employing Argon with an R.F power of 100 W, the dwelling time was 3 hours. 4 samples were produced with temperatures between 350 and 400 ºC in the substrate by using an oxygen flow of 2 and 8 sccm, the remaining parameters of the process were fixed. The coatings and substrates were characterized using Atomic Force Microscopy (AFM), Scanning Electron Microscopy (SEM), X-ray diffraction (XRD) and Energy Dispersive Spectroscopy (EDS) in order to compare their properties before and after deposition. The films thicknesses were between 47 and 70 nm. The results show that at high oxygen flow the alumina structure prevails in the coatings while at lower oxygen flow only aluminum is deposited in the coatings. It was shown that the temperature increases grain size and roughness while decreasing the thicknesses of the coatings.

  15. Characterization of ZrO2 Films Deposited by Reactive Unbalanced Magnetron Sputtering

    Institute of Scientific and Technical Information of China (English)

    ZHAO Sha; XU Ke-wei; WANG Yuan

    2004-01-01

    ZrO2 thin films were deposited by r.f. reactive unbalanced magnetron sputtering. The influence of electromagnetic coil current on microstructure and optical properties of the films was investigated. At low coil current of 0.2A, small grains are produced. With the increase of coil current, the deposition rate and surface roughness are decreased and the packing density in proportion to the refractive index is increased remarkably. The refractive index is as high as 2.236 (at λ=600nm) at 0.4A. At the high coil current of 0.6A, grains appear to grow up due to thermal effects and therefore optical properties of the films are deteriorated a little.

  16. Discharge current modes of high power impulse magnetron sputtering

    Directory of Open Access Journals (Sweden)

    Zhongzhen Wu

    2015-09-01

    Full Text Available Based on the production and disappearance of ions and electrons in the high power impulse magnetron sputtering plasma near the target, the expression of the discharge current is derived. Depending on the slope, six possible modes are deduced for the discharge current and the feasibility of each mode is discussed. The discharge parameters and target properties are simplified into the discharge voltage, sputtering yield, and ionization energy which mainly affect the discharge plasma. The relationship between these factors and the discharge current modes is also investigated.

  17. Target voltage behaviour of a vanadium-oxide thin film during reactive magnetron sputtering

    Institute of Scientific and Technical Information of China (English)

    Wang Tao; Jiang Ya-Dong; Yu He; Wu Zhi-Ming; Zhao He-Nan

    2011-01-01

    This paper simulates reactive magnetron-sputtering in constant current mode in a Vanadium-O2/Ar system equipped with a DC power supply by adopting both kinetics model and Berg's model. The target voltage during the reactive sputtering has been investigated as a function of reactive gas flow. Both experiments and simulations demonstrate a hysteresis curve with respect to the oxygen supply. The time-dependent variation of the target mode is studied by measuring the target voltage for various reactive oxygen gas flows and pre-sputtering times. The presputtering time increases with the increased initial target voltage. Furthermore, a corresponding time-dependent model simulating target voltage changes is also proposed. Based on these simulations, we find some relationships between the discharge voltage behaviour and the properties of the formed oxide. In this way, a better understanding of the target voltage changes during reactive sputtering can be achieved. We conclude that the presented theoretical models for parameter-dependent case and time-dependent case are in qualitative agreement with the experimental results and can be used to comprehend the target voltage behaviour in the deposition of vanadium oxide thin films.

  18. Perspective: Is there a hysteresis during reactive High Power Impulse Magnetron Sputtering (R-HiPIMS)?

    Science.gov (United States)

    Strijckmans, K.; Moens, F.; Depla, D.

    2017-02-01

    This paper discusses a few mechanisms that can assist to answer the title question. The initial approach is to use an established model for DC magnetron sputter deposition, i.e., RSD2013. Based on this model, the impact on the hysteresis behaviour of some typical HiPIMS conditions is investigated. From this first study, it becomes clear that the probability to observe hysteresis is much lower as compared to DC magnetron sputtering. The high current pulses cannot explain the hysteresis reduction. Total pressure and material choice make the abrupt changes less pronounced, but the implantation of ionized metal atoms that return to the target seems to be the major cause. To further substantiate these results, the analytical reactive sputtering model is coupled with a published global plasma model. The effect of metal ion implantation is confirmed. Another suggested mechanism, i.e., gas rarefaction, can be ruled out to explain the hysteresis reduction. But perhaps the major conclusion is that at present, there are too little experimental data available to make fully sound conclusions.

  19. Deposition of highly textured AlN thin films by reactive high power impulse magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Moreira, Milena A. [Department of Solid State Electronics, Ångström Laboratory, Uppsala University, Box 534, SE-752 21 Uppsala, Sweden and School of Electrical and Computer Engineering, University of Campinas, CEP 13.083-852 Campinas-SP (Brazil); Törndahl, Tobias; Katardjiev, Ilia; Kubart, Tomas, E-mail: tomas.kubart@angstrom.uu.se [Department of Solid State Electronics, Ångström Laboratory, Uppsala University, Box 534, SE-752 21 Uppsala (Sweden)

    2015-03-15

    Aluminum nitride thin films were deposited by reactive high power impulse magnetron sputtering (HiPIMS) and pulsed direct-current on Si (100) and textured Mo substrates, where the same deposition conditions were used for both techniques. The films were characterized by x-ray diffraction and atomic force microscopy. The results show a pronounced improvement in the AlN crystalline texture for all films deposited by HiPIMS on Si. Already at room temperature, the HiPIMS films exhibited a strong preferred (002) orientation and at 400 °C, no contributions from other orientations were detected. Despite the low film thickness of only 200 nm, an ω-scan full width at half maximum value of 5.1° was achieved on Si. The results are attributed to the high ionization of sputtered material achieved in HiPIMS. On textured Mo, there was no significant difference between the deposition techniques.

  20. Reactive DC magnetron sputtered zirconium nitride (ZrN) thin film and its characterization

    Science.gov (United States)

    Subramanian, B.; Ashok, K.; Sanjeeviraja, C.; Kuppusami, P.; Jayachandran, M.

    2008-05-01

    Zirconium nitride (ZrN) thin films were prepared by using reactive direct current (DC) magnetron sputtering onto different substrates. A good polycrystalline nature with face centered cubic structure was observed from X-ray Diffraction for ZrN thin films. The observed 'd' values from the X-ray Diffraction pattern were found to be in good agreement with the standard 'd' values (JCPDS-89-5269). An emission peak is observed at 587nm from Photoluminescence studies for the excitation at 430nm. The resistivity value (ρ) of 2.1798 (μΩ cm) was observed. ZrN has high wear resistance and low coefficient of friction. A less negative value of Ecorr and lower value of Icorr observed for ZrN / Mild Steel (MS) clearly confirm the better corrosion resistance than the bare substrate. Also the higher Rct value and lower Cdl value was observed for ZrN / MS from Nyquist - plot.

  1. Duty cycle control in reactive high-power impulse magnetron sputtering of hafnium and niobium

    Science.gov (United States)

    Ganesan, R.; Treverrow, B.; Murdoch, B.; Xie, D.; Ross, A. E.; Partridge, J. G.; Falconer, I. S.; McCulloch, D. G.; McKenzie, D. R.; Bilek, M. M. M.

    2016-06-01

    Instabilities in reactive sputtering have technological consequences and have been attributed to the formation of a compound layer on the target surface (‘poisoning’). Here we demonstrate how the duty cycle of high power impulse magnetron sputtering (HiPIMS) can be used to control the surface conditions of Hf and Nb targets. Variations in the time resolved target current characteristics as a function of duty cycle were attributed to gas rarefaction and to the degree of poisoning of the target surface. As the operation transitions from Ar driven sputtering to metal driven sputtering, the secondary electron emission changes and reduces the target current. The target surface transitions smoothly from a poisoned state at low duty cycles to a quasi-metallic state at high duty cycles. Appropriate selection of duty cycle increases the deposition rate, eliminates the need for active regulation of oxygen flow and enables stable reactive deposition of stoichiometric metal oxide films. A model is presented for the reactive HIPIMS process in which the target operates in a partially poisoned mode with different degrees of oxide layer distribution on its surface that depends on the duty cycle. Finally, we show that by tuning the pulse characteristics, the refractive indices of the metal oxides can be controlled without increasing the absorption coefficients, a result important for the fabrication of optical multilayer stacks.

  2. Controlled formation of anatase and rutile TiO2 thin films by reactive magnetron sputtering

    NARCIS (Netherlands)

    Rafieian, Damon; Ogieglo, Wojciech; Savenije, Tom; Lammertink, Rob G.H.

    2015-01-01

    We discuss the formation of TiO2 thin films via DC reactive magnetron sputtering. The oxygen concentration during sputtering proved to be a crucial parameter with respect to the final film structure and properties. The initial deposition provided amorphous films that crystallise upon annealing to an

  3. Evolution of sputtering target surface composition in reactive high power impulse magnetron sputtering

    Science.gov (United States)

    Kubart, T.; Aijaz, A.

    2017-05-01

    The interaction between pulsed plasmas and surfaces undergoing chemical changes complicates physics of reactive High Power Impulse Magnetron Sputtering (HiPIMS). In this study, we determine the dynamics of formation and removal of a compound on a titanium surface from the evolution of discharge characteristics in an argon atmosphere with nitrogen and oxygen. We show that the time response of a reactive process is dominated by surface processes. The thickness of the compound layer is several nm and its removal by sputtering requires ion fluence in the order of 1016 cm-2, much larger than the ion fluence in a single HiPIMS pulse. Formation of the nitride or oxide layer is significantly slower in HiPIMS than in dc sputtering under identical conditions. Further, we explain very high discharge currents in HiPIMS by the formation of a truly stoichiometric compound during the discharge off-time. The compound has a very high secondary electron emission coefficient and leads to a large increase in the discharge current upon target poisoning.

  4. Synthesizing mixed phase titania nanocomposites with enhanced photoactivity and redshifted photoresponse by reactive DC magnetron sputtering

    Science.gov (United States)

    Chen, Le

    Recent work points out the importance of the solid-solid interface in explaining the high photoactivity of mixed phase TiO2 catalysts. The goal of this research was to probe the synthesis-structure-function relationships of the solid-solid interfaces created by the reactive direct current (DC) magnetron sputtering of titanium dioxide. I hypothesize that the reactive DC magnetron sputtering is a useful method for synthesizing photo-catalysts with unique structure including solid-solid interfaces and surface defects that are associated with enhanced photoreactivity as well as a photoresponse shifted to longer wavelengths of light. I showed that sputter deposition provides excellent control of the phase and interface formation as well as the stoichiometry of the films. I explored the effects exerted by the process parameters of pressure, oxygen partial pressure, target power, substrate bias (RF), deposition incidence angle, and post annealing treatment on the structural and functional characteristics of the catalysts. I have successfully made pure and mixed phase TiO2 films. These films were characterized with UV-Vis, XPS, AFM, SEM, TEM, XRD and EPR, to determine optical properties, elemental stoichiometry, surface morphology, phase distribution and chemical coordination. Bundles of anatase-rutile nano-columns having high densities of dual-scale of interfaces among and within the columns are fabricated. Photocatalytic performance of the sputtered films as measured by the oxidation of the pollutant, acetaldehyde, and the reduction of CO2 for fuel (CH4) production was compared (normalized for surface area) to that of mixed phase TiO2 fabricated by other methods, including flame hydrolysis powders, and solgel deposited TiO 2 films. The sputtered mixed phase materials were far superior to the commercial standard (Degussa P25) and solgel TiO2 based on gas phase reaction of acetaldehyde oxidation under UV light and CO2 reduction under both UV and visible illuminations. The

  5. Dynamic phase-control of a rising sun magnetron using modulated and continuous current

    Energy Technology Data Exchange (ETDEWEB)

    Fernandez-Gutierrez, Sulmer, E-mail: sulmer.a.fernandez.gutierrez@intel.com [Intel Corporation, 2111 NE 25th Ave, Hillsboro, Oregon 97214 (United States); Browning, Jim [Department of Electrical and Computer Engineering, Boise State University, Boise, Idaho 83725 (United States); Lin, Ming-Chieh [Department of Electrical and Biomedical Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Smithe, David N. [Tech-X Corporation, 5621 Arapahoe Ave, Boulder, Colorado 80303 (United States); Watrous, Jack [Confluent Sciences, LLC, Albuquerque, New Mexico 87111 (United States)

    2016-01-28

    Phase-control of a magnetron is studied via simulation using a combination of a continuous current source and a modulated current source. The addressable, modulated current source is turned ON and OFF at the magnetron operating frequency in order to control the electron injection and the spoke phase. Prior simulation work using a 2D model of a Rising Sun magnetron showed that the use of 100% modulated current controlled the magnetron phase and allowed for dynamic phase control. In this work, the minimum fraction of modulated current source needed to achieve a phase control is studied. The current fractions (modulated versus continuous) were varied from 10% modulated current to 100% modulated current to study the effects on phase control. Dynamic phase-control, stability, and start up time of the device were studied for all these cases showing that with 10% modulated current and 90% continuous current, a phase shift of 180° can be achieved demonstrating dynamic phase control.

  6. Influence of nitrogen flow rates on materials properties of CrN films grown by reactive magnetron sputtering

    Indian Academy of Sciences (India)

    B Subramanian; K Prabakaran; M Jayachandran

    2012-08-01

    Chromium nitride (CrN) hard thin films were deposited on different substrates by reactive direct current (d.c.) magnetron sputtering with different nitrogen flow rates. The X-ray diffraction patterns showed mixed Cr2N and CrN phases. The variations in structural parameters are discussed. The grain size increased with increasing nitrogen flow rates. Scanning electron microscopy image showed columnar and dense microstructure with varying nitrogen flow rates. An elemental analysis of the samples was realized by means of energy dispersive spectroscopy. The electrical studies indicated the semiconducting behaviour of the films at the nitrogen flow rate of 15 sccm.

  7. Optical properties of diamond like carbon films containing copper, grown by high power pulsed magnetron sputtering and direct current magnetron sputtering: Structure and composition effects

    Energy Technology Data Exchange (ETDEWEB)

    Meškinis, Š., E-mail: sarunas.meskinis@ktu.lt; Čiegis, A.; Vasiliauskas, A.; Šlapikas, K.; Tamulevičius, T.; Tamulevičienė, A.; Tamulevičius, S.

    2015-04-30

    In the present study chemical composition, structure and optical properties of hydrogenated diamond like carbon films containing copper (DLC:Cu films) deposited by reactive magnetron sputtering were studied. Different modes of deposition — direct current (DC) sputtering and high power pulsed magnetron sputtering (HIPIMS) as well as two configurations of the magnetron magnetic field (balanced and unbalanced) were applied. X-ray diffractometry, Raman scattering spectroscopy, energy-dispersive X-ray spectroscopy and atomic force microscopy were used to study the structure and composition of the films. It was shown that by using HIPIMS mode contamination of the cathode during the deposition of DLC:Cu films can be suppressed. In all cases oxygen atomic concentration in the films was in 5–10 at.% range and it increased with the copper atomic concentration. The highest oxygen content was observed in the films deposited employing low ion/neutral ratio balanced DC magnetron sputtering process. According to the analysis of the parameters of Raman scattering spectra, sp{sup 3}/sp{sup 2} bond ratio decreased with the increase of Cu atomic concentration in the DLC films. Clear dependence of the extinction, absorbance and reflectance spectra on copper atomic concentration in the films was observed independently of the method of deposition. Surface plasmon resonance effect was observed only when Cu atomic concentration in DLC:Cu film was at least 15 at.%. The maximum of the surface plasmon resonance peak of the absorbance spectra of DLC:Cu films was in 600–700 nm range and redshifted with the increase of Cu amount. The ratio between the intensities of the plasmonic peak and hydrogenated amorphous carbon related peak at ~ 220 nm both in the extinction and absorbance spectra as well as peak to background ratio of DLC:Cu films increased linearly with Cu amount in the investigated 0–40 at.% range. Reflectance of the plasmonic DLC:Cu films was in 30–50% range that could be

  8. TiO2 Thin Film UV Detectors Deposited by DC Reactive Magnetron Sputtering

    Institute of Scientific and Technical Information of China (English)

    ZHANG Li-wei; YAO Ning; ZHANG Bing-lin; FAN Zhi-qin; YANG Shi-e; LU Zhan-ling

    2004-01-01

    Crystalline TiO2 thin films were prepared by DC reactive magnetron sputtering on indium-tin oxide(ITO) thin film deposited on quartz substrate, the photoconductive UV detector on TiO2 thin films was based on a sandwich structure of C/ TiO2/ITO. The measurement of the I-V characteristics for these devices shows good ohmic contact. The photoresponse of TiO2 thin films was analyzed at different bias voltage. Voltage.

  9. Photocatalytic Activity of Reactively Sputtered Titania Coatings Deposited Using a Full Face Erosion Magnetron

    OpenAIRE

    Farahani, Nick; Kelly, Peter,; West, Glen; Hill, Claire; Vishnyakov, Vladimir

    2013-01-01

    Titanium dioxide (titania) is widely used as a photocatalyst for its moderate band gap, high photoactivity, recyclability, nontoxicity, low cost and its significant chemical stability. The anatase phase of titania is known to show the highest photocatalytic activity, however, the presence of this phase alone is not sufficient for sustained activity. In this study TiO2 coatings were deposited onto glass substrates by mid-frequency pulsed magnetron sputtering from metallic targets in reactive m...

  10. Optical and Chemical Properties of Mixed-valent Rhenium Oxide Films Synthesized by Reactive DC Magnetron Sputtering

    Science.gov (United States)

    2015-04-03

    AFRL-RX-WP-JA-2015-0178 OPTICAL AND CHEMICAL PROPERTIES OF MIXED- VALENT RHENIUM OXIDE FILMS SYNTHESIZED BY REACTIVE DC MAGNETRON...To) 06 May 2010 – 16 March 2015 4. TITLE AND SUBTITLE OPTICAL AND CHEMICAL PROPERTIES OF MIXED-VALENT RHENIUM OXIDE FILMS SYNTHESIZED BY REACTIVE ...DC MAGNETRON SPUTTERING (POSTPRINT) 5a. CONTRACT NUMBER In-house 5b. GRANT NUMBER 5c. PROGRAM ELEMENT NUMBER 62102F 6. AUTHOR(S) (see

  11. High-current electron gun with a planar magnetron integrated with an explosive-emission cathode

    Science.gov (United States)

    Kiziridi, P. P.; Ozur, G. E.

    2017-05-01

    A new high-current electron gun with plasma anode and explosive-emission cathode integrated with planar pulsed powered magnetron is described. Five hundred twelve copper wires 1 mm in diameter and 15 mm in height serve as emitters. These emitters are installed on stainless steel disc (substrate) with 3-mm distance between them. Magnetron discharge plasma provides increased ion density on the periphery of plasma anode formed by high-current Penning discharge ignited within several milliseconds after starting of the magnetron discharge. The increased on the periphery ion density improves the uniformity of high-current electron beam produced in such an electron gun.

  12. Adhesion analysis for chromium nitride thin films deposited by reactive magnetron sputtering

    Science.gov (United States)

    Rusu, F. M.; Merie, V. V.; Pintea, I. M.; Molea, A.

    2016-08-01

    The thin film industry is continuously growing due to the wide range of applications that require the fabrication of advanced components such as sensors, biological implants, micro-electromechanical devices, optical coatings and so on. The selection regarding the deposition materials, as well as the deposition technology influences the properties of the material and determines the suitability of devices for certain real-world applications. This paper is focused on the adhesion force for several chromium nitride thin films obtained by reactive magnetron sputtering. All chromium nitride thin films were deposited on a silicon substrate, the discharge current and the argon flow being kept constant. The main purpose of the paper is to determine the influence of deposition parameters on the adhesion force. Therefore some of the deposition parameters were varied in order to study their effect on the adhesion force. Experimentally, the values of the adhesion force were determined in multiple points for each sample using the spectroscopy in point mode of the atomic force microscope. The obtained values were used to estimate the surface energy of the CrN thin films based on two existing mathematical models for the adhesion force when considering the contact between two bodies.

  13. Decorative black TiCxOy film fabricated by DC magnetron sputtering without importing oxygen reactive gas

    Science.gov (United States)

    Ono, Katsushi; Wakabayashi, Masao; Tsukakoshi, Yukio; Abe, Yoshiyuki

    2016-02-01

    Decorative black TiCxOy films were fabricated by dc (direct current) magnetron sputtering without importing the oxygen reactive gas into the sputtering chamber. Using a ceramic target of titanium oxycarbide (TiC1.59O0.31), the oxygen content in the films could be easily controlled by adjustment of total sputtering gas pressure without remarkable change of the carbon content. The films deposited at 2.0 and 4.0 Pa, those are higher pressure when compared with that in conventional magnetron sputtering, showed an attractive black color. In particular, the film at 4.0 Pa had the composition of TiC1.03O1.10, exhibited the L* of 41.5, a* of 0.2 and b* of 0.6 in CIELAB color space. These values were smaller than those in the TiC0.29O1.38 films (L* of 45.8, a* of 1.2 and b* of 1.2) fabricated by conventional reactive sputtering method from the same target under the conditions of gas pressure of 0.3 Pa and optimized oxygen reactive gas concentration of 2.5 vol.% in sputtering gas. Analysis of XRD and XPS revealed that the black film deposited at 4.0 Pa was the amorphous film composed of TiC, TiO and C. The adhesion property and the heat resisting property were enough for decorative uses. This sputtering process has an industrial advantage that the decorative black coating with color uniformity in large area can be easily obtained by plain operation because of unnecessary of the oxygen reactive gas importing which is difficult to be controlled uniformly in the sputtering chamber.

  14. SnOx Thin Films Deposited by Reactive Magnetron Sputtering for Microbatteries Anodes

    Institute of Scientific and Technical Information of China (English)

    XING Guang-jian; YANG Zhi-min; SHEN Wan; MAO Chang-hui; DU Jun

    2004-01-01

    SnOx thin films, with various oxygen deficiencies, are deposited from a Sn target on to silicon substratesby reactive magnetron sputtering. The SnOx films are characterized by X-ray diffraction ( XRD ) and X-ray photoelectron spectroscopy(XPS). Influences of deposition conditions such as oxygen partial pressure and annealing temperature on the characteristicsof the films are discussed in detail. The high reversible capacity and cycle performance characteristics of SnOxare also described. The results show that stoichiometric parameter x increases with the increase in oxygen partial pressure. The chargedischarge performance of the SnOxfilms is found to be dependent on x value.

  15. Control of the optical properties of silicon and chromium mixed oxides deposited by reactive magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Vergara, L., E-mail: vergara@icmm.csic.e [Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Cientificas, Cantoblanco, 28049 Madrid (Spain); Galindo, R. Escobar [Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Cientificas, Cantoblanco, 28049 Madrid (Spain); Centro de Microanalisis de Materiales, Universidad Autonoma de Madrid, Cantoblanco, 28049 Madrid (Spain); Martinez, R. [AIN, Centro de Ingenieria Avanzada de Superficies, 31191 Cordovilla, Pamplona (Spain); Sanchez, O. [Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Cientificas, Cantoblanco, 28049 Madrid (Spain); Palacio, C. [Departamento de Fisica Aplicada, Universidad Autonoma de Madrid, Cantoblanco, 28049 Madrid (Spain); Albella, J.M. [Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Cientificas, Cantoblanco, 28049 Madrid (Spain)

    2011-03-31

    The development of mixed-oxide thin films allows obtaining materials with better properties than those of the different binary oxides, which makes them suitable for a great number of applications in different fields, such as tribology, optics or microelectronics. In this paper we investigate the deposition of mixed chromium and silicon oxides deposited by reactive magnetron sputtering with a view to use them as optical coatings with an adjustable refractive index. These films have been characterized by means of Rutherford backscattering spectrometry, Auger electron spectroscopy, X-ray diffraction, scanning electron microscopy, Fourier-transform infrared spectroscopy and spectroscopic ellipsometry so as to determine how the deposition conditions influence the characteristics of the material. We have found that the deposition parameter whose influence determines the properties of the films to a greater extent is the amount of oxygen in the reactive sputtering gas.

  16. Photocatalytic Properties of Doped TiO2 Coatings Deposited Using Reactive Magnetron Sputtering

    Directory of Open Access Journals (Sweden)

    Parnia Navabpour

    2017-01-01

    Full Text Available Mechanically robust photocatalytic titanium oxide coatings can be deposited using reactive magnetron sputtering. In this article, we investigate the effect of doping on the activity of reactively sputtered TiO2. Silver, copper and stainless steel targets were used to co-deposit the dopants. The films were characterised using XRD, SEM and EDX. Adhesion and mechanical properties were evaluated using scratch testing and nano-indentation, respectively, and confirmed that the coatings had excellent adhesion to the stainless steel substrate. All coatings showed superhydrophilicity under UV irradiation. A methylene blue degradation test was used to assess their photocatalytic activity and showed all coatings to be photoactive to varying degrees, dependent upon the dopant, its concentration and the resulting coating structure. The results demonstrated that copper doping at low concentrations resulted in the coatings with the highest photocatalytic activity under both UV and fluorescent light irradiation.

  17. Influence of nitrogen admixture to argon on the ion energy distribution in reactive high power pulsed magnetron sputtering of chromium

    Science.gov (United States)

    Breilmann, W.; Maszl, C.; Hecimovic, A.; von Keudell, A.

    2017-04-01

    Reactive high power impulse magnetron sputtering (HiPIMS) of metals is of paramount importance for the deposition of various oxides, nitrides and carbides. The addition of a reactive gas such as nitrogen to an argon HiPIMS plasma with a metal target allows the formation of the corresponding metal nitride on the substrate. The addition of a reactive gas introduces new dynamics into the plasma process, such as hysteresis, target poisoning and the rarefaction of two different plasma gases. We investigate the dynamics for the deposition of chromium nitride by a reactive HiPIMS plasma using energy- and time-resolved ion mass spectrometry, fast camera measurements and temporal and spatially resolved optical emission spectroscopy. It is shown that the addition of nitrogen to the argon plasma gas significantly changes the appearance of the localized ionization zones, the so-called spokes, in HiPIMS plasmas. In addition, a very strong modulation of the metal ion flux within each HiPIMS pulse is observed, with the metal ion flux being strongly suppressed and the nitrogen molecular ion flux being strongly enhanced in the high current phase of the pulse. This behavior is explained by a stronger return effect of the sputtered metal ions in the dense plasma above the racetrack. This is best observed in a pure nitrogen plasma, because the ionization zones are mostly confined, implying a very high local plasma density and consequently also an efficient scattering process.

  18. Time resolved measurement of film growth during reactive high power pulsed magnetron sputtering (HIPIMS) of titanium nitride

    CERN Document Server

    Mitschker, Felix; Benedikt, Jan; Maszl, Christian; von Keudell, Achim

    2013-01-01

    The growth rate during reactive high power pulsed magnetron sputtering (HIPIMS) of titanium nitride is measured with a temporal resolution of up to 25 us using a rotating shutter concept. According to that concept a 200 um slit is rotated in front of the substrate synchronous with the HIPIMS pulses. Thereby, the growth flux is laterally distributed over the substrate. By measuring the resulting deposition profile with profilometry and with x-ray photoelectron spectroscopy, the temporal variation of the titanium and nitrogen growth flux per pulse is deduced. The analysis reveals that film growth occurs mainly during a HIPIMS pulse, with the growth rate following the HIPIMS phases ignition, current rise, gas rarefaction, plateau and afterglow. The growth fluxes of titanium and nitrogen follow slightly different behaviors with titanium dominating at the beginning of the HIPIMS pulse and nitrogen at the end of the pulse. This is explained by the gas rarefaction effect resulting in a dense initial metal plasma and...

  19. An ionization region model of the reactive Ar/O2 high power impulse magnetron sputtering discharge

    Science.gov (United States)

    Gudmundsson, J. T.; Lundin, D.; Brenning, N.; Raadu, M. A.; Huo, Chunqing; Minea, T. M.

    2016-12-01

    A new reactive ionization region model (R-IRM) is developed to describe the reactive Ar/O2 high power impulse magnetron sputtering (HiPIMS) discharge with a titanium target. It is then applied to study the temporal behavior of the discharge plasma parameters such as electron density, the neutral and ion composition, the ionization fraction of the sputtered vapor, the oxygen dissociation fraction, and the composition of the discharge current. We study and compare the discharge properties when the discharge is operated in the two well established operating modes, the metal mode and the poisoned mode. Experimentally, it is found that in the metal mode the discharge current waveform displays a typical non-reactive evolution, while in the poisoned mode the discharge current waveform becomes distinctly triangular and the current increases significantly. Using the R-IRM we explore the current increase and find that when the discharge is operated in the metal mode Ar+ and Ti+ -ions contribute most significantly (roughly equal amounts) to the discharge current while in the poisoned mode the Ar+ -ions contribute most significantly to the discharge current and the contribution of O+ -ions, Ti+ -ions, and secondary electron emission is much smaller. Furthermore, we find that recycling of atoms coming from the target, that are subsequently ionized, is required for the current generation in both modes of operation. From the R-IRM results it is found that in the metal mode self-sputter recycling dominates and in the poisoned mode working gas recycling dominates. We also show that working gas recycling can lead to very high discharge currents but never to a runaway. It is concluded that the dominating type of recycling determines the discharge current waveform.

  20. Optical and electrical properties of thin NiO films deposited by reactive magnetron sputtering and spray pyrolysis

    Science.gov (United States)

    Parkhomenko, H. P.; Solovan, M. N.; Mostovoi, A. I.; Orletskii, I. G.; Parfenyuk, O. A.; Maryanchuk, P. D.

    2017-06-01

    Thin NiO films are deposited by reactive magnetron sputtering and spray pyrolysis. The main optical constants, i.e., refractive index n(λ), absorption coefficient α(λ), extinction coefficient k(λ), and thickness d, are determined. The temperature dependence of the resistance of thin films is found, and the activation energy of films deposited by different methods is determined.

  1. Exploring the benefits of depositing hard TiN thin films by non-reactive magnetron sputtering

    NARCIS (Netherlands)

    Martinez-Martinez, D.; Lopez-Cartes, C.; Fernandez, A.; Sanchez-Lopez, J. C.

    2013-01-01

    The aim of this paper is to compare the mechanical and tribological properties of TiN coatings prepared in a conventional magnetron sputtering chamber according to two different routes: the usual reactive sputtering of a Ti target in an Ar/N-2 atmosphere vs. the comparatively more simple sputtering

  2. Manufacturing of HfOxNy films using reactive magnetron sputtering for ISFET application

    Science.gov (United States)

    Firek, Piotr; Wysokiński, Piotr

    2016-12-01

    Hafnium Oxide-Nitride films were deposited using reactive magnetron sputtering in O2/N2/Ar gas mixture. Deposition was planned according to Taguchi optimization method. Morphology of fabricated layers was tested using AFM technique (Ra=0.2÷1,0 nm). Thickness of HfOXNY films was measured using spectroscopic ellipsometry (t=45÷54 nm). Afterwards MIS structures were created by Al metallization process then layers were electrically characterised using I-V and C-V measurements. This allowed to calculate the electrical parameters of layers such as: flat-band voltage UFB, dielectric constant Ki, interface state trap density Dit and effective charge Qeff. Subsequently, deposited HfOxNy layers were annealed in PDA process (40 min 400 °C 100% N2) after which the electrical characterization was performed again.

  3. Bimodal substrate biasing to control \\gamma-Al2O3 deposition during reactive magnetron sputtering

    CERN Document Server

    Prenzel, Marina; Stein, Adrian; von Keudell, Achim; Nahif, Farwah; Schneider, Jochen M

    2013-01-01

    Al2O3 thin films have been deposited at substrate temperatures between 500{\\deg}C to 600{\\deg}C by reactive magnetron sputtering using an additional arbitrary substrate bias to tailor the energy distribution of the incident ions. The films were characterized by X-ray diffraction (XRD) and Fourier transform infrared spectroscopy (FTIR). The film structure being amorphous, nanocrystalline, or crystalline was correlated with characteristic ion energy distributions. The evolving crystalline structure is connected with different levels of displacements per atom (dpa) in the growing film as being derived from TRIM simulations. The boundary between the formation of crystalline films and amorphous or nanocrystalline films was at 0.9 dpa for a substrate temperature of 500{\\deg}C. This threshold shifts to 0.6 dpa for films grown at 550{\\deg}C.

  4. Controlled formation of anatase and rutile TiO2 thin films by reactive magnetron sputtering

    Directory of Open Access Journals (Sweden)

    Damon Rafieian

    2015-09-01

    Full Text Available We discuss the formation of TiO2 thin films via DC reactive magnetron sputtering. The oxygen concentration during sputtering proved to be a crucial parameter with respect to the final film structure and properties. The initial deposition provided amorphous films that crystallise upon annealing to anatase or rutile, depending on the initial sputtering conditions. Substoichiometric films (TiOx<2, obtained by sputtering at relatively low oxygen concentration, formed rutile upon annealing in air, whereas stoichiometric films formed anatase. This route therefore presents a formation route for rutile films via lower (<500 °C temperature pathways. The dynamics of the annealing process were followed by in situ ellipsometry, showing the optical properties transformation. The final crystal structures were identified by XRD. The anatase film obtained by this deposition method displayed high carriers mobility as measured by time-resolved microwave conductance. This also confirms the high photocatalytic activity of the anatase films.

  5. Smoothing of Discharge Inhomogeneities at High Currents in Gasless High Power Impulse Magnetron Sputtering

    CERN Document Server

    Andersson, Joakim; Anders, André

    2014-01-01

    The discharges in high power impulse magnetron sputtering (HiPIMS) have been reported to consist of azimuthally inhomogeneous plasma with locally increased light emission. The luminous zones seemingly travel around the racetrack and are implicated in generation of the high ion kinetic energies observed in HiPIMS. We show that the inhomogeneities smooth out at high discharge current to yield azimuthally homogeneous plasma. This may have implications for the spatial and kinetic energy distribution of sputtered particles, and therefore also on the thin films deposited by high power impulse magnetron sputtering.

  6. Influence of direct current plasma magnetron sputtering parameters on the material characteristics of polycrystalline copper films

    Energy Technology Data Exchange (ETDEWEB)

    Chan, K.-Y. [Thin Film Laboratory, Faculty of Engineering, Multimedia University, Jalan Multimedia, 63100 Cyberjaya, Selangor (Malaysia)], E-mail: k.y.chan@fz-juelich.de; Luo, P.-Q.; Zhou, Z.-B. [Department of Physics, Shanghai Jiao Tong University, 800 Dongchuan Road, 200240 Shanghai (China); Tou, T.-Y.; Teo, B.-S. [Thin Film Laboratory, Faculty of Engineering, Multimedia University, Jalan Multimedia, 63100 Cyberjaya, Selangor (Malaysia)

    2009-03-01

    Physical vapor processes using glow plasma discharge are widely employed in microelectronic industry. In particular magnetron sputtering is a major technique employed for the coating of thin films. This paper addresses the influence of direct current (DC) plasma magnetron sputtering parameters on the material characteristics of polycrystalline copper (Cu) thin films coated on silicon substrates. The influence of the sputtering parameters including DC plasma power and argon working gas pressure on the electrical and structural properties of the thin Cu films was investigated by means of surface profilometer, four-point probe and atomic force microscopy.

  7. Post Magnetron Sputter And Reactive Sputter Coating Of Contoured Glass, Acrylic And Polycarbonate Substrates

    Science.gov (United States)

    Wright, Michael P.

    1985-12-01

    A Post Magnetron Sputter concept employing a cylindrical internally cooled target (cathode) is described. The use of an internal, rotating, permanent magnetic field resulting in 360° utilisation of the target material is outlined. Computer controlled horizontal and vertical movement of the cathode assembly facilitates the coating of contoured substrates which may be glass, acrylic or polycarbonate. Deposition of different metals is easily achieved by changing the cathode or covering it with a suitable sheath material. The design of the cathode results in economic utilisation of the target material, which is particularly important when sputtering expensive metals such as gold. In addition to the deposition of metallic films, such as stainless steel or chrome, reactive sputtering may be undertaken by the introduction of a reactive gas into the vacuum chamber. In this way metal oxide, sulphide or nitride layers may be deposited according to the requirements of the layer structure. Specific optically-active oxides such as indium tin oxide are easily deposited in a uniform film and the formation of multilayer coatings for sun protective and heat rejecting applications is practicable. Indeed, a complete process may be undertaken without removing the substrate from the chamber; merely by adding or changing the reactive gas present.

  8. Electrical properties of AlN{sub x}O{sub y} thin films prepared by reactive magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Borges, J., E-mail: joelborges@fisica.uminho.pt [Centro de Fisica, Universidade do Minho, 4710-057 Braga (Portugal); Martin, N. [Institut FEMTO-ST, Departement MN2S, UMR 6174 (CNRS, UFC, ENSMM, UTBM) 32, Avenue de l' Observatoire 25044 BESANCON Cedex (France); Barradas, N.P.; Alves, E. [Instituto Superior Tecnico, Instituto Tecnologico Nuclear, E.N. 10, 2686-953 Sacavem (Portugal); Eyidi, D.; Beaufort, M.F.; Riviere, J.P. [Institut PPRIME, UPR 3346 CNRS-Universite de Poitiers-ENSMA, Departement de Physique et Mecanique des Materiaux, BP 30179 86962 Chasseneuil-Futuroscope Cedex (France); Vaz, F.; Marques, L. [Centro de Fisica, Universidade do Minho, 4710-057 Braga (Portugal)

    2012-08-31

    Direct current magnetron sputtering was used to produce AlN{sub x}O{sub y} thin films, using an aluminum target, argon and a mixture of N{sub 2} + O{sub 2} (17:3) as reactive gases. The partial pressure of the reactive gas mixture was increased, maintaining the discharge current constant. Within the two identified regimes of the target (metallic and compound), four different tendencies for the deposition rate were found and a morphological evolution from columnar towards cauliflower-type, ending up as dense and featureless-type films. The structure was found to be Al-type (face centered cubic) and the structural characterization carried out by X-ray diffraction and transmission electron microscopy suggested the formation of an aluminum-based polycrystalline phase dispersed in an amorphous aluminum oxide/nitride (or oxynitride) matrix. This type of structure, composition, morphology and grain size, were found to be strongly correlated with the electrical response of the films, which showed a gradual transition between metallic-like responses towards semiconducting and even insulating-type behaviors. A group of films with high aluminum content revealed a sharp decrease of the temperature coefficient of resistance (TCR) as the concentration ratio of non-metallic/aluminum atomic ratio increased. Another group of samples, where the non-metallic content became more important, revealed a smooth transition between positive and negative values of TCR. In order to test whether the oxynitride films have a unique behavior or simply a transition between the typical responses of aluminum and of those of the correspondent nitride and oxide, the electrical properties of the ternary oxynitride system were compared with AlN{sub x} and AlO{sub y} systems, prepared in similar conditions. - Highlights: Black-Right-Pointing-Pointer AlN{sub x}O{sub y} thin films were produced using magnetron sputtering. Black-Right-Pointing-Pointer AlN{sub x}O{sub y} film morphology, composition and

  9. Return of target material ions leads to a reduced hysteresis in reactive high power impulse magnetron sputtering: Model

    Science.gov (United States)

    Kadlec, Stanislav; Čapek, Jiří

    2017-05-01

    A tendency to disappearing hysteresis in reactive High Power Impulse Magnetron Sputtering (HiPIMS) has been reported previously without full physical explanation. An analytical model of reactive pulsed sputtering including HiPIMS is presented. The model combines a Berg-type model of reactive sputtering with the global HiPIMS model of Christie-Vlček. Both time and area averaging is used to describe the macroscopic steady state, especially the reactive gas balance in the reactor. The most important effect in the presented model is covering of reacted parts of target by the returning ionized metal, effectively lowering the target coverage by reaction product at a given partial pressure. The return probability of ionized sputtered metal has been selected as a parameter to quantify the degree of HiPIMS effects. The model explains the reasons for reduced hysteresis in HiPIMS. The critical pumping speed was up to a factor of 7 lower in reactive HiPIMS compared to the mid-frequency magnetron sputtering. The model predicts reduced hysteresis in HiPIMS due to less negative slope of metal flux to substrates and of reactive gas sorption as functions of reactive gas partial pressure. Higher deposition rate of reactive HiPIMS compared to standard reactive sputtering is predicted for some parameter combinations. Comparison of the model with experiment exhibits good qualitative and quantitative agreement for three material combinations, namely, Ti-O2, Al-O2, and Ti-N2.

  10. Reactive magnetron sputtering deposition of bismuth tungstate onto titania nanoparticles for enhancing visible light photocatalytic activity

    Science.gov (United States)

    Ratova, Marina; Kelly, Peter J.; West, Glen T.; Tosheva, Lubomira; Edge, Michele

    2017-01-01

    Titanium dioxide - bismuth tungstate composite materials were prepared by pulsed DC reactive magnetron sputtering of bismuth and tungsten metallic targets in argon/oxygen atmosphere onto anatase and rutile titania nanoparticles. The use of an oscillating bowl placed beneath the two magnetrons arranged in a co-planar closed field configuration enabled the deposition of bismuth tungstate onto loose powders, rather than a solid substrate. The atomic ratio of the bismuth/tungsten coatings was controlled by varying the power applied to each target. The effect of the bismuth tungstate coatings on the phase, optical and photocatalytic properties of titania was investigated by X-ray diffraction, energy-dispersive X-ray spectroscopy (EDX), Brunauer-Emmett-Teller (BET) surface area measurements, transmission electron microscopy (TEM), UV-vis diffuse reflectance spectroscopy and an acetone degradation test. The latter involved measurements of the rate of CO2 evolution under visible light irradiation of the photocatalysts, which indicated that the deposition of bismuth tungstate resulted in a significant enhancement of visible light activity, for both anatase and rutile titania particles. The best results were achieved for coatings with a bismuth to tungsten atomic ratio of 2:1. In addition, the mechanism by which the photocatalytic activity of the TiO2 nanoparticles was enhanced by compounding it with bismuth tungstate was studied by microwave cavity perturbation. The results of these tests confirmed that such enhancement of the photocatalytic properties is due to more efficient photogenerated charge carrier separation, as well as to the contribution of the intrinsic photocatalytic properties of Bi2WO6.

  11. Mechanical, tribological and corrosion performance of WBN composite films deposited by reactive magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Lihua; Zhao, Hongjian; Xu, Junhua, E-mail: jhxu@just.edu.cn

    2014-10-01

    Highlights: • WBN composite films were deposited by reactive magnetron sputtering. • The WBN film which exhibited the highest hardness had best wear resistance at room and elevated temperature. • The corrosion resistance of the substrate which coated with W{sub 2}N films or WBN films was superior to the uncoated substrate. • The corrosion resistance of the substrate which coated with W{sub 2}N films was improved slightly by doping some boron content and the corrosion mechanism was discussed in the view of structure. - Abstract: WBN composite films with various boron contents ranging from 25.1 at.% to 46.5 at.% were deposited by a multi-target magnetron sputtering system. The microstructure, mechanical, tribological and corrosion behavior of films were studied using XRD, SEM, FTIR, HRTEM, nano-indentation, Ball-on-disc dry sliding wear tester, Bruker 3D Profiler and compared to W{sub 2}N. All the films exhibited face-centred cubic (fcc) structure W{sub 2}N; bcc α-W phases appeared as the B content was 25.1 at.% and amorphous BN appeared as the B content was 31.9 at.%. The hardness and compressive stress of WBN films first increased and then decreased with increasing the B content. As the B content was 38.1 at.%, they reached the maximum values of 36.1 GPa and 2.6 GPa, respectively. The best wear resistance at room and elevated temperature was found for the film which was shown to exhibit the highest hardness and compressive stress. The corrosion resistance of the substrate which coated with W{sub 2}N films or WBN films was superior to the uncoated substrate. The corrosion resistance of the substrate which coated with W{sub 2}N films was improved slightly by doping some boron content.

  12. TiN films grown by reactive magnetron sputtering with enhanced ionization at low discharge pressures

    Energy Technology Data Exchange (ETDEWEB)

    Kadlec, S.; Musil, J. (Ceskoslovenska Akademie Ved, Prague (Czechoslovakia). Fyzikalni Ustav); Valvoda, V. (Karlova Univ., Prague (Czechoslovakia). Fakulta Matematicko-Fyzikalni); Muenz, W.-D.; Petersein, H.; Schroeder, J. (Leybold A.G., Hanau (Germany, F.R.))

    1990-01-01

    TiN films were produced by reactive magnetron sputtering at a discharge pressure of 0.09 Pa on substrates placed 200 mm away from the magnetron target, using a sputtering system with enhanced ionization by means of multipolar magnetic confinement. The effects on film properties are reported for two ranges of values: an external substrate bias U{sub s} of from -35 to -150 V, and a floating potential U{sub fl} of from -24 to -45 V. All films show a dense microstructure, a smooth surface and shiny golden color. The microhardness HV is between 2000 and 2600 kg mm{sup -1}, a high critical load of up to L{sub c} = 58 N in scratch tests and the coefficient of friction against a cemented carbide counter ball is between 0.12 and 0.22. The color co-ordinated L{sup *}, A{sup *} and B{sup *} depend on the bias voltage. The brightness L{sup *} reaches 78 CIELAB units. The properties of films prepared at U{sub s} between -60 and -150 V compare well to those of ion-plated films. The films prepared at U{sub s} < 60 V, or at any of the values for U{sub fl}, exhibit comparatively low compressive microstresses down to 2.2 GPa and low microstrain down to 3.5 x 10{sup -3}. These films show single (111), (200) or (220) textures, or a mixed (200) + (111) texture, depending on the U value at which they were prepared. (author).

  13. High rate deposition of thin film cadmium sulphide by pulsed direct current magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Lisco, F., E-mail: F.Lisco@lboro.ac.uk [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire LE11 3TU (United Kingdom); Kaminski, P.M.; Abbas, A.; Bowers, J.W.; Claudio, G. [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire LE11 3TU (United Kingdom); Losurdo, M. [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR, via Orabona 4, 70126 Bari (Italy); Walls, J.M. [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire LE11 3TU (United Kingdom)

    2015-01-01

    Cadmium Sulphide (CdS) is an important n-type semiconductor widely used as a window layer in thin film photovoltaics Copper Indium Selenide, Copper Indium Gallium (di)Selenide, Copper Zinc Tin Sulphide and Cadmium Telluride (CdTe). Cadmium Sulphide has been deposited using a number of techniques but these techniques can be slow (chemical bath deposition and Radio Frequency sputtering) or the uniformity and the control of thickness can be relatively difficult (close space sublimation). In this paper we report on the development of a process using pulsed Direct Current magnetron sputtering which allows nanometre control of thin film thickness using time only. The CdS thin films deposited in this process are highly uniform and smooth. They exhibit the preferred hexagonal structure at room temperature deposition and they have excellent optical properties. Importantly, the process is highly stable despite the use of a semi-insulating magnetron target. Moreover, the process is very fast. The deposition rate using 1.5 kW of power to a 6-inch circular magnetron was measured to be greater than 8 nm/s. This makes the process suitable for industrial deployment. - Highlights: • Pulsed DC magnetron sputtering of CdS • High deposition rate deposition • Uniform, pinhole free films.

  14. Mechanical, tribological and corrosion properties of CrBN films deposited by combined direct current and radio frequency magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Jahodova, Vera [Singapore Institute of Manufacturing Technology, 71 Nanyang Drive, 638075 (Singapore); Koszalin University of Technology, Sniadeckich 2, 75-0453 Koszalin (Poland); Technical University of Liberec, Studentska 1402/2, 461 17 Liberec1 (Czech Republic); Ding, Xing-zhao, E-mail: xzding@SIMTech.a-star.edu.sg [Singapore Institute of Manufacturing Technology, 71 Nanyang Drive, 638075 (Singapore); Seng, Debbie H.L. [Institute of Materials Research and Engineering, 3 Research Link, 117602 (Singapore); Gulbinski, W. [Koszalin University of Technology, Sniadeckich 2, 75-0453 Koszalin (Poland); Louda, P. [Technical University of Liberec, Studentska 1402/2, 461 17 Liberec1 (Czech Republic)

    2013-10-01

    Cr–B–N films were deposited on stainless steel substrates by a combined direct current and radio frequency (RF) reactive unbalanced magnetron sputtering process using two elemental Cr and one compound BN targets. Boron content in the as-deposited films was qualitatively analyzed by time-of-flight secondary ion mass spectroscopy. Films' microstructure, mechanical and tribological properties were characterized by X-ray diffraction, nanoindentation and pin-on-disk tribometer experiments. Corrosion behavior of the Cr–B–N films was evaluated by electrochemical potentiodynamic polarization method in a 3 wt.% NaCl solution. All the films were crystallized into a NaCl-type cubic structure. At lower RF power applied on the BN target (≤ 600 W), films are relatively randomly oriented, and films' crystallinity increased with increasing RF power. With increasing RF power further (≥ 800 W), films became (200) preferentially oriented, and films' crystallinity decreased gradually. With incorporation of a small amount of boron atoms into the CrN films, hardness, wear- and corrosion-resistance were all improved evidently. The best wear and corrosion resistance was obtained for the film deposited with 600 W RF power applied on the BN target. - Highlights: • CrBN films deposited by direct current and radio frequency magnetron sputtering. • CrBN exhibited higher hardness, wear- and corrosion-resistance than pure CrN. • The best wear- and corrosion-resistant film was deposited with 600 W RF power.

  15. Residual stress and texture in Aluminum doped Zinc Oxide layers deposited by reactive radio frequency magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Azanza Ricardo, C.L., E-mail: Cristy.Azanza@ing.unitn.it [Department of Civil, Environmental and Mechanical Engineering, University of Trento, 38123 via Mesiano 77, Trento (Italy); Pastorelli, M.; D' Incau, M. [Department of Civil, Environmental and Mechanical Engineering, University of Trento, 38123 via Mesiano 77, Trento (Italy); Aswath, P. [College of Engineering, University of Texas at Arlington, TX (United States); Scardi, P. [Department of Civil, Environmental and Mechanical Engineering, University of Trento, 38123 via Mesiano 77, Trento (Italy)

    2016-04-30

    Aluminum doped Zinc Oxide thin films were deposited on standard soda-lime substrates by reactive radio frequency magnetron sputtering. Residual stress and texture were studied by X-ray diffraction, while X-ray Absorption Near Edge Spectroscopy provided information on the Al environment in the best performing thin films. The influence of deposition parameters on structural and microstructural properties is discussed. A correlation between microstructure and residual stress state with electrical and optical properties is proposed. - Highlights: • Al doped ZnO thin films were obtained by reactive radio frequency magnetron sputtering. • Correlation of stresses and texture with electrical and optical properties is shown. • Homogeneous and stress-free thin-films are the best performing ones. • XANES confirmed the doping mechanism and excluded some spurious phases.

  16. Experimental investigation of quasiperiodic-chaotic-quasiperiodic-chaotic transition in a direct current magnetron sputtering plasma

    Energy Technology Data Exchange (ETDEWEB)

    Sabavath, Gopi Kishan; Banerjee, I.; Mahapatra, S. K., E-mail: skmahapatra@bitmesra.ac.in [Plasma Laboratory, Department of Physics, Birla Institute of Technology-Mesra, Ranchi 835215 (India); Shaw, Pankaj Kumar; Sekar Iyengar, A. N. [Plasma Physics Division, Saha Institute of Nuclear Physics, 1/AF, Bidhannagar, Kolkata 700064 (India)

    2015-08-15

    Floating potential fluctuations from a direct current magnetron sputtering plasma have been analysed using time series analysis techniques like phase space plots, power spectra, frequency bifurcation plot, etc. The system exhibits quasiperiodic-chaotic-quasiperiodic-chaotic transitions as the discharge voltage was increased. The transitions of the fluctuations, quantified using the largest Lyapunov exponent, have been corroborated by Hurst exponent and the Shannon entropy. The Shannon entropy is high for quasiperiodic and low for chaotic oscillations.

  17. Aluminum oxide films deposited in low pressure conditions by reactive pulsed dc magnetron sputtering

    CERN Document Server

    Seino, T

    2002-01-01

    The reactive pulsed dc sputtering technique is widely used for the deposition of oxide films. The operating pressure for sputtering is commonly above 0.13 Pa. In this study, however, aluminum oxide (alumina) films were deposited at operating pressures from 0.06 to 0.4 Pa using a sputtering system equipped with a scanning magnetron cathode and a pulsed dc power supply. The pulsed dc power was found to be useful not only to reduce arcing, but also to sustain the discharge at low pressure. The electrical breakdown field, intrinsic stress, O/Al ratio, refractive index, and surface roughness were investigated. Both a low intrinsic stress and an O/Al ratio around the stoichiometry were required to get the film having a high breakdown field. A low operating pressure of 0.1 Pa was found to provide the necessary stress and O/Al ratio targets. A 50-nm-thick alumina film having a maximum breakdown field of 7.4 MV/cm was obtained.

  18. Electrical and optical properties of reactive DC magnetron sputtered silver oxide thin films: role of oxygen

    Energy Technology Data Exchange (ETDEWEB)

    Kumar Barik, Ullash; Srinivasan, S.; Nagendra, C.L.; Subrahmanyam, A

    2003-04-01

    Silver oxide thin films have been prepared on soda lime glass substrates at room temperature (300 K) by reactive DC Magnetron sputtering technique using pure silver metal target; the oxygen flow rates have been varied in the range 0.00-2.01 sccm. The X-ray diffraction data on these films show a systematic change from metallic silver to silver (sub) oxides. The electrical resistivity increases with increasing oxygen flow. The films show a p-type behavior (by both Hall and Seebeck measurements) for the oxygen flow rates of 0.54, 1.09 and 1.43 sccm. The refractive index of the films (at 632.8 nm) decreases with increasing oxygen content and is in the range 1.167-1.145, whereas the p-type films show a higher refractive index (1.186-1.204). The work function of these silver oxide films has been measured by Kelvin Probe technique. The results, in specific, the p-type conductivity in the silver oxide films, have been explained on the basis of the theory of partial ionic charge proposed by Sanderson.

  19. Enhanced deposition of ZnO films by Li doping using radio frequency reactive magnetron sputtering

    Institute of Scientific and Technical Information of China (English)

    Liang-xian Chen; Sheng Liu; Cheng-ming Li; Yi-chao Wang; Jin-long Liu; Jun-jun Wei

    2015-01-01

    Radio frequency (RF) reactive magnetron sputtering was utilized to deposit Li-doped and undoped zinc oxide (ZnO) films on sili-con wafers. Various Ar/O2 gas ratios by volume and sputtering powers were selected for each deposition process. The results demonstrate that the enhanced ZnO films are obtained via Li doping. The average deposition rate for doped ZnO films is twice more than that of the un-doped films. Both atomic force microscopy and scanning electron microscopy studies indicate that Li doping significantly contributes to the higher degree of crystallinity of wurtzite–ZnO. X-ray diffraction analysis demonstrates that Li doping promotes the (002) preferential orien-tation in Li-doped ZnO films. However, an increase in the ZnO lattice constant, broadening of the (002) peak and a decrease in the peak inte-gral area are observed in some Li-doped samples, especially as the form of Li2O. This implies that doping with Li expands the crystal struc-ture and thus induces the additional strain in the crystal lattice. The oriented-growth Li-doped ZnO will make significant applications in fu-ture surface acoustic wave devices.

  20. Uniformity in large area ZnO:Al films prepared by reactive midfrequency magnetron sputtering

    CERN Document Server

    Hong, R J; Sittinger, V; Szyszka, B; Hoeing, T; Bräuer, G; Heide, G; Frischat, G H

    2002-01-01

    Al-doped zinc oxide (ZnO:Al) films were deposited on glass substrates using a reactive midfrequency magnetron sputtering process. The optical transmission and reflection as well as the electrical resistivity of the films prepared on an area of 1000x600 mm sup 2 were determined at different locations. Films with a uniform distribution of resistivity between 2.9x10 sup - sup 4 and 3.6x10 sup - sup 4 OMEGA cm and transmittance up to 88% in the visible spectral range were obtained. The ellipsometric spectra of the films were also analyzed using the Drude-Lorentz model. The calculated thicknesses of the films agreed well with those measured by a step profilometer. Secondary neutral mass spectrometry depth profiling showed uniform contents of Zn and O elements, while a slight periodic variation of the Al content was observed at different depths inside the film. A transition zone of 35-55 nm in width between the films and glass substrates due to the interdiffusion was also observed.

  1. Preparation and Characterization of NiO Thin Films by DC Reactive Magnetron Sputtering

    Directory of Open Access Journals (Sweden)

    Y. Ashok Kumar Reddy

    2012-12-01

    Full Text Available Nickel oxide (NiO thin films were successfully deposited on Corning 7059 glass substrates at different oxygen partial pressures in the range of 1 × 10 – 4 to 9 × 10 – 4 mbar using dc reactive magnetron sputtering technique. Structural properties of NiO films showed polycrystalline nature with cubic structure along (220 orientation. The optical transmittance and band gap values of the films increased with increasing the oxygen partial pressure from 1 × 10 – 4 to 5 × 10 – 4 mbar and decreased on further increasing the oxygen partial pressure. Using Scanning Electron Microscopy (SEM, fine grains were observed at oxygen partial pressure of 5 × 10 – 4 mbar. The film resistivity decreases from 90.48 to 13.24 Ω cm with increase in oxygen partial pressure to 5 × 10 – 4 mbar and then increased on further increasing the oxygen partial pressure.

  2. Deposition of TiN/CrN hard superlattices by reactive d.c. magnetron sputtering

    Indian Academy of Sciences (India)

    Harish C Barshilia; K S Rajam

    2003-02-01

    Multilayer superlattice coatings of TiN/CrN were deposited on silicon substrates using a reactive d.c. magnetron sputtering process. Superlattice period, also known as modulation wavelength (), was controlled by controlling the dwell time of the substrate underneath Ti and Cr targets. X-ray diffraction (XRD), nanoindentation and atomic force microscopy (AFM) were used to characterize the films. The XRD data showed 1st and 2nd order satellite reflections along the principal reflection for films having 132 Å $\\geq \\Lambda \\geq$ 84 Å, thus confirming the formation of superlattice. The multilayer coatings exhibited hardness () as high as 3200 kg/mm2, which is 2 times the rule-of-mixtures value (i.e. $H_{TiN}$ = 2200 kg/mm2 and $H_{CrN}$ = 1000 kg/mm2). Detailed investigations on the effects of various process parameters indicated that hardness of the superlattice coatings was affected not only by modulation wavelength but also by nitrogen partial pressure and ion bombardment during deposition.

  3. Deposition of Visible Light Active Photocatalytic Bismuth Molybdate Thin Films by Reactive Magnetron Sputtering

    Directory of Open Access Journals (Sweden)

    Marina Ratova

    2016-01-01

    Full Text Available Bismuth molybdate thin films were deposited by reactive magnetron co-sputtering from two metallic targets in an argon/oxygen atmosphere, reportedly for the first time. Energy dispersive X-ray spectroscopy (EDX analysis showed that the ratio of bismuth to molybdenum in the coatings can be effectively controlled by varying the power applied to each target. Deposited coatings were annealed in air at 673 K for 30 min. The crystalline structure was assessed by means of Raman spectroscopy and X-ray diffraction (XRD. Oxidation state information was obtained by X-ray photoelectron spectroscopy (XPS. Photodegradation of organic dyes methylene blue and rhodamine B was used for evaluation of the photocatalytic properties of the coatings under a visible light source. The photocatalytic properties of the deposited coatings were then compared to a sample of commercial titanium dioxide-based photocatalytic product. The repeatability of the dye degradation reactions and photocatalytic coating reusability are discussed. It was found that coatings with a Bi:Mo ratio of approximately 2:1 exhibited the highest photocatalytic activity of the coatings studied; its efficacy in dye photodegradation significantly outperformed a sample of commercial photocatalytic coating.

  4. CrN thin films prepared by reactive DC magnetron sputtering for symmetric supercapacitors

    KAUST Repository

    Wei, Binbin

    2016-12-29

    Supercapacitors have been becoming indispensable energy storage devices in micro-electromechanical systems and have been widely studied over the past few decades. Transition metal nitrides with excellent electrical conductivity and superior cycling stability are promising candidates as supercapacitor electrode materials. In this work, we report the fabrication of CrN thin films using reactive DC magnetron sputtering and further their applications for symmetric supercapacitors for the first time. The CrN thin film electrodes fabricated under the deposition pressure of 3.5 Pa show an areal specific capacitance of 12.8 mF cm at 1.0 mA cm and high cycling stability with 92.1% capacitance retention after 20 000 cycles in a 0.5 M HSO electrolyte. Furthermore, our developed CrN//CrN symmetric supercapacitor can deliver a high energy density of 8.2 mW h cm at the power density of 0.7 W cm along with outstanding cycling stability. Thus, the CrN thin films have great potential for application in supercapacitors and other energy storage systems.

  5. Properties of Al-doped Copper Nitride Films Prepared by Reactive Magnetron Sputtering

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    Cu3N and AlxCu3N films were prepared with reactive magnetron sputtering method. The two films were deposited on glass substrates at 0.8 Pa N2 partial pressure and 100 ℃ substrate temperature by using a pure Cu and Al target, respectively. X-ray diffraction (XRD) measurements show that the un-doped film was composed of Cu3N crystallites with anti-ReO3 structure and adopted [111] preferred orientation. XRD shows that the growth of Al-doped copper nitride films (AlxCu3N) was affected strongly by doping Al, the intensity of [111] peak decreases with increasing the concentration of Al and the high concentration of Al could prevent the Cu3N from crystallization. AFM shows that the surface of AlxCu3N film is smoother than that of Cu3N film. Compared with the Cu3N films, the resistivities of the Al-doped copper nitride films (AlxCu3N) have been reduced, and the microhardness has been enhanced.

  6. Initial growth and texture formation during reactive magnetron sputtering of TiN on Si(111)

    CERN Document Server

    Li, T Q; Tsuji, Y; Ohsawa, T; Komiyama, H

    2002-01-01

    The initial growth and texture formation mechanism of titanium nitride (TiN) films were investigated by depositing TiN films on (111) silicon substrates by using reactive magnetron sputtering of a Ti metallic target under a N sub 2 /Ar atmosphere, and then analyzing the films in detail by using transmission electron microscopy (TEM) and x-ray diffraction (XRD). Two power sources for the sputtering, dc and rf, were compared. At the initial growth stage, a continuous amorphous film containing randomly oriented nuclei was observed when the film thickness was about 3 nm. The nuclei grew and formed a polycrystalline layer when the film thickness was about 6 nm. As the film grew further, its orientation changed depending on the deposition conditions. For dc sputtering, the appearance of (111) or (200)-preferred orientations depended on the N sub 2 partial pressure, and the intensity of the preferred orientation increased with increasing film thickness. For rf sputtering, however, when the film thickness was small (...

  7. Surface morphology of titanium nitride thin films synthesized by DC reactive magnetron sputtering

    Directory of Open Access Journals (Sweden)

    Ţǎlu Ştefan

    2015-03-01

    Full Text Available In this paper the influence of temperature on the 3-D surface morphology of titanium nitride (TiN thin films synthesized by DC reactive magnetron sputtering has been analyzed. The 3-D morphology variation of TiN thin films grown on p-type Si (100 wafers was investigated at four different deposition temperatures (473 K, 573 K, 673 K, 773 K in order to evaluate the relation among the 3-D micro-textured surfaces. The 3-D surface morphology of TiN thin films was characterized by means of atomic force microscopy (AFM and fractal analysis applied to the AFM data. The 3-D surface morphology revealed the fractal geometry of TiN thin films at nanometer scale. The global scale properties of 3-D surface geometry were quantitatively estimated using the fractal dimensions D, determined by the morphological envelopes method. The fractal dimension D increased with the substrate temperature variation from 2.36 (at 473 K to 2.66 (at 673 K and then decreased to 2.33 (at 773 K. The fractal analysis in correlation with the averaged power spectral density (surface yielded better quantitative results of morphological changes in the TiN thin films caused by substrate temperature variations, which were more precise, detailed, coherent and reproducible. It can be inferred that fractal analysis can be easily applied for the investigation of morphology evolution of different film/substrate interface phases obtained using different thin-film technologies.

  8. Nanocharacterization of Titanium Nitride Thin Films Obtained by Reactive Magnetron Sputtering

    Science.gov (United States)

    Merie, Violeta Valentina; Pustan, Marius Sorin; Bîrleanu, Corina; Negrea, Gavril

    2015-05-01

    Titanium nitride thin films are used in applications such as tribological layers for cutting tools, coating of some medical devices (scalpel blades, prosthesis, implants, etc.), sensors, electrodes for bioelectronics, microelectronics, diffusion barrier, bio-micro-electromechanical systems, and so on. This work is a comparative study concerning the influence of substrate temperature on some mechanical and tribological characteristics of titanium nitride thin films. The researched thin films were obtained by the reactive magnetron sputtering method. The experiments employed two kinds of substrates: a steel substrate and a silicon one. The elaboration of titanium nitride thin films was done at two temperatures. First, when the substrates were at room temperature, and second, when the substrates were previously heated at 250°C. The temperature of 250°C was kept constant during the deposition of the films. The samples were then investigated by atomic force microscopy in order to establish their mechanical and tribological properties. The nanohardness, Young's modulus, roughness, and friction force were some of the determined characteristics. The results demonstrated that the substrate which was previously heated at 250°C led to the obtaining of more adherent titanium nitride thin films than the substrate used at room temperature. The preheating of both substrates determined the decrease of thin films roughness. The friction force, nanohardness and Young's modulus of the tested samples increased when the substrates were preheated at 250°C.

  9. Thermal stability of tungsten sub-nitride thin film prepared by reactive magnetron sputtering

    Science.gov (United States)

    Zhang, X. X.; Wu, Y. Z.; Mu, B.; Qiao, L.; Li, W. X.; Li, J. J.; Wang, P.

    2017-03-01

    Tungsten sub-nitride thin films deposited on silicon samples by reactive magnetron sputtering were used as a model system to study the phase stability and microstructural evolution during thermal treatments. XRD, SEM&FIB, XPS, RBS and TDS were applied to investigate the stability of tungsten nitride films after heating up to 1473 K in vacuum. At the given experimental parameters a 920 nm thick crystalline film with a tungsten and nitrogen stoichiometry of 2:1 were achieved. The results showed that no phase and microstructure change occurred due to W2N film annealing in vacuum up to 973 K. Heating up to 1073 K led to a partial decomposition of the W2N phase and the formation of a W enrichment layer at the surface. Increasing the annealing time at the same temperature, the further decomposition of the W2N phase was negligible. The complete decomposition of W2N film happened as the temperature reached up to 1473 K.

  10. Evidence for breathing modes in direct current, pulsed, and high power impulse magnetron sputtering plasmas

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Yuchen [State Key Lab for Materials Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074 (China); Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720 (United States); Zhou, Xue [Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720 (United States); Department of Electrical Engineering, Harbin Institute of Technology, Harbin 150000 (China); Liu, Jason X. [Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720 (United States); Department of Physics, University of California, Berkeley, Berkeley, California 94720 (United States); Anders, André, E-mail: aanders@lbl.gov [Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720 (United States)

    2016-01-18

    We present evidence for breathing modes in magnetron sputtering plasmas: periodic axial variations of plasma parameters with characteristic frequencies between 10 and 100 kHz. A set of azimuthally distributed probes shows synchronous oscillations of the floating potential. They appear most clearly when considering the intermediate current regime in which the direction of azimuthal spoke motion changes. Breathing oscillations were found to be superimposed on azimuthal spoke motion. Depending on pressure and current, one can also find a regime of chaotic fluctuations and one of stable discharges, the latter at high current. A pressure-current phase diagram for the different situations is proposed.

  11. Propagation direction reversal of ionization zones in the transition between high and low current magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    School of Materials Science and Engineering, State Key Lab for Materials Processing and Die & Mold Technology, Huazhong University of Science and Technology, Wuhan 430074, China; Department of Physics, University of California Berkeley, Berkeley, California 94720, USA; Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720, USA; Yang, Yuchen; Liu, Jason; Liu, Lin; Anders, André

    2014-12-11

    Past research has revealed the propagation of dense, asymmetric ionization zones in both high and low current magnetron discharges. Here we report about the direction reversal of ionization zone propagation as observed with fast cameras. At high currents, zones move in the E B direction with velocities of 103 to 104 m/s. However at lower currents, ionization zones are observed to move in the opposite, the -E B direction, with velocities ~;; 103 m/s. It is proposed that the direction reversal is associated with the local balance of ionization and supply of neutrals in the ionization zone.

  12. Bioactivity response of Ta1-xOx coatings deposited by reactive DC magnetron sputtering.

    Science.gov (United States)

    Almeida Alves, C F; Cavaleiro, A; Carvalho, S

    2016-01-01

    The use of dental implants is sometimes accompanied by failure due to periimplantitis disease and subsequently poor esthetics when soft-hard tissue margin recedes. As a consequence, further research is needed for developing new bioactive surfaces able to enhance the osseous growth. Tantalum (Ta) is a promising material for dental implants since, comparing with titanium (Ti), it is bioactive and has an interesting chemistry which promotes the osseointegration. Another promising approach for implantology is the development of implants with oxidized surfaces since bone progenitor cells interact with the oxide layer forming a diffusion zone due to its ability to bind with calcium which promotes a stronger bond. In the present report Ta-based coatings were deposited by reactive DC magnetron sputtering onto Ti CP substrates in an Ar+O2 atmosphere. In order to assess the osteoconductive response of the studied materials, contact angle and in vitro tests of the samples immersed in Simulated Body Fluid (SBF) were performed. Structural results showed that oxide phases where achieved with larger amounts of oxygen (70 at.% O). More compact and smooth coatings were deposited by increasing the oxygen content. The as-deposited Ta coating presented the most hydrophobic character (100°); with increasing oxygen amount contact angles progressively diminished, down to the lowest measured value, 63°. The higher wettability is also accompanied by an increase on the surface energy. Bioactivity tests demonstrated that highest O-content coating, in good agreement with wettability and surface energy values, showed an increased affinity for apatite adhesion, with higher Ca/P ratio formation, when compared to the bare Ti substrates.

  13. Optical properties of thin films of mixed Ni–W oxide made by reactive DC magnetron sputtering

    OpenAIRE

    Valyukh, I.; Green, S.V.; Granqvist, C. G.; Niklasson, G. A.; Valyukh, S; Arwin, H.

    2011-01-01

    Thin films of NixW1-x oxides with x = 0.05, 0.19, 0.43 and 0.90 were studied. Films with thicknesses in the range 125-250 nm were deposited on silicon wafers at room temperature by reactive DC magnetron co-sputtering from targets of Ni and W. The films were characterized with X-ray diffraction (XRD), scanning electron microscopy (SEM), and spectroscopic ellipsometry (SE). XRD spectra and SEM micrographs showed that all films were amorphous and possessed a columnar structure. The ellipsometric...

  14. BiVO4 photoanodes for water splitting with high injection efficiency, deposited by reactive magnetron co-sputtering

    OpenAIRE

    Haibo Gong; Norman Freudenberg; Man Nie; Roel van de Krol; Klaus Ellmer

    2016-01-01

    Photoactive bismuth vanadate (BiVO4) thin films were deposited by reactive co-magnetron sputtering from metallic Bi and V targets. The effects of the V-to-Bi ratio, molybdenum doping and post-annealing on the crystallographic and photoelectrochemical (PEC) properties of the BiVO4 films were investigated. Phase-pure monoclinic BiVO4 films, which are more photoactive than the tetragonal BiVO4 phase, were obtained under slightly vanadium-rich conditions. After annealing of the Mo-doped BiVO4 fil...

  15. Ion beam analysis, corrosion resistance and nanomechanical properties of TiAlCN/CNx multilayer grown by reactive magnetron sputtering

    OpenAIRE

    Alemon, B.; Flores, M.; Canto, C.; E. Andrade; O.G. de Lucio; M.F. Rocha; Broitman, Esteban

    2014-01-01

    A novel TiAlCN/CNx, multilayer coating, consisting of nine TiAlCN/CNx periods with a top layer 0.5 mu m of CNx, was designed to enhance the corrosion resistance of CoCrMo biomedical alloy. The multilayers were deposited by dc and RF reactive magnetron sputtering from Ti0.5Al0.5 and C targets respectively in a N-2/Ar plasma. The corrosion resistance and mechanical properties of the multilayer coatings were analyzed and compared to CoCrMo bulk alloy. Ion beam analysis (IBA) and X-ray diffractio...

  16. Cu-In-O composite thin films deposited by reactive DC magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Ye Fan [School of Physical Science and Technology and Shenzhen Key Laboratory of Sensor Technologies, Shenzhen University, Shenzhen 518060 (China); Cai Xingmin, E-mail: caixm@szu.edu.c [School of Physical Science and Technology and Shenzhen Key Laboratory of Sensor Technologies, Shenzhen University, Shenzhen 518060 (China); Dai Fuping [Department of Applied Physics, Northwestern Polytechnic University, Xian 710072 (China); Jing Shouyong [Institute of Optoelectronics, Shenzhen University, Shenzhen 518060 (China); Zhang Dongping; Fan Ping; Liu Lijun [School of Physical Science and Technology and Shenzhen Key Laboratory of Sensor Technologies, Shenzhen University, Shenzhen 518060 (China)

    2011-02-01

    Cu-In-O composite thin films were deposited by reactive DC magnetron sputtering at room temperature. The samples were characterized by scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX), X-ray diffraction (XRD), UV/vis spectrophotometer, four-probe measurement and Seebeck effect measurement, etc. The samples contain Cu, In and O. The ratios of Cu to In and O to In increase with increase in O{sub 2} flow rates. The ratio of Cu to In is over 1 and this suggests that Cu is in excess. The obtained Cu-In-O thin films are very possibly made of rhombohedral In{sub 2}O{sub 3} and monoclinic CuO. Transmittance of the films decreases with increase in O{sub 2} flow rate. The decrease in transmittance results from increase in Cu content in the films. The optical band gap of all the samples is estimated to be 4.1-4.4 eV, which is larger than those of In{sub 2}O{sub 3} and CuO. The sheet resistance of the films decreases with increase in O{sub 2} flow rate. Conductivity of the films is a little low, due to the addition of Cu and the poor crystalline quality of the film. The conduction behavior of the films is similar to that of In{sub 2}O{sub 3} and the conduction mechanism of Cu-In-O thin films is through O vacancy. -- Research Highlights: {yields}Cu-In-O composite thin films were fabricated by DC sputtering at room temperature. {yields}The films are made of rhombohedral In{sub 2}O{sub 3} and monoclinic CuO. {yields}The transmittance depends on the Cu content in the film. {yields}The direct optical band gap is around 4.1-4.4eV. {yields}The conducting mechanism is due to oxygen vacancy.

  17. Thermal decomposition routes of CrN hard coatings synthesized by reactive arc evaporation and magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Ernst, W.; Neidhardt, J. [Christian Doppler Laboratory for Advanced Hard Coatings, Department of Physical Metallurgy and Materials Testing, Franz-Josef Strasse 18, University of Leoben, 8700 Leoben (Austria); Willmann, H. [Materials Center Leoben, Franz-Josef Strasse 13, 8700 Leoben (Austria); Sartory, B. [Institute of Mineralogy and Petrography, University of Innsbruck, Innrain 52, 6020 Innsbruck (Austria); Mayrhofer, P.H. [Department of Physical Metallurgy and Materials Testing, Franz-Josef Strasse 18, University of Leoben, 8700 Leoben (Austria)], E-mail: paul.mayrhofer@unileoben.ac.at; Mitterer, C. [Christian Doppler Laboratory for Advanced Hard Coatings, Department of Physical Metallurgy and Materials Testing, Franz-Josef Strasse 18, University of Leoben, 8700 Leoben (Austria); Department of Physical Metallurgy and Materials Testing, Franz-Josef Strasse 18, University of Leoben, 8700 Leoben (Austria)

    2008-11-28

    This study presents a comparison of the thermal decomposition of CrN hard coatings synthesized by reactive arc evaporation and magnetron sputtering. Structural changes in the coating material were determined by in-situ high-temperature X-ray diffraction and correlated to the results of simultaneous thermal analysis. Annealing temperatures up to 1440 deg. C in Ar and a variation in heating rates gave insights to the different decomposition kinetics for the material deposited by reactive arc evaporation and magnetron sputtering. Both single-phase CrN coatings start to decompose above 925 deg. C under release of nitrogen in two major reaction steps to pure Cr via the intermediate step of Cr{sub 2}N. While the kinetics for the first decomposition reaction from CrN to Cr{sub 2}N is different for both samples, the second step from Cr{sub 2}N into Cr is similar. This behavior can be understood considering the differences in structure, composition, and morphology of both as-deposited coatings and their evolution during thermal analysis.

  18. Al-doped ZnO films deposited on a slightly reduced buffer layer by reactive dc unbalanced magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Kusayanagi, Minehide; Uchida, Azusa; Oka, Nobuto; Jia, Junjun [Graduate School of Science and Engineering, Aoyama Gakuin University, 5-10-1 Fuchinobe, Sagamihara, Kanagawa 252-5258 (Japan); Nakamura, Shin-ichi [Center for Instrumental Analysis, Aoyama Gakuin University, 5-10-1 Fuchinobe, Sagamihara, Kanagawa 252-5258 (Japan); Shigesato, Yuzo, E-mail: yuzo@chem.aoyama.ac.jp [Graduate School of Science and Engineering, Aoyama Gakuin University, 5-10-1 Fuchinobe, Sagamihara, Kanagawa 252-5258 (Japan)

    2014-03-31

    Al-doped ZnO (AZO) films were deposited on a fused silica glass substrate by reactive dc unbalanced magnetron sputtering using a Zn–Al (Al: 3.6 at.%) alloy target with an impedance control system. A very thin slightly reduced AZO buffer layer was inserted between the glass substrate and AZO films. For the AZO films deposited at 200 °C, the lowest resistivity in the absence of the buffer layer was 8.0 × 10{sup −4} Ω cm, whereas this was reduced to 5.9 × 10{sup −4} Ω cm after introducing a 5-nm-thick buffer layer. The transmittance for all the films was above 80% in the visible region. The effects of the buffer layer were analysed and discussed in detail. It is found that the insertion of the buffer layer can improve the crystallinity of the AZO film. - Highlights: • Al-doped ZnO (AZO) films with AZO buffer layers were deposited. • Reactive dc unbalance magnetron sputtering with impedance control was used. • Insertion of a buffer layer can lead to a lower resistivity. • Insertion of a buffer layer improved the crystallinity of AZO films.

  19. Effects of oxygen addition in reactive cluster beam deposition of tungsten by magnetron sputtering with gas aggregation

    Energy Technology Data Exchange (ETDEWEB)

    Polášek, J., E-mail: xpolasekj@seznam.cz [Department of Surface and Plasma Science, Faculty of Mathematics and Physic, Charles University, V Holešovičkách 2, Prague 8, CZ-18000 (Czech Republic); Mašek, K. [Department of Surface and Plasma Science, Faculty of Mathematics and Physic, Charles University, V Holešovičkách 2, Prague 8, CZ-18000 (Czech Republic); Marek, A.; Vyskočil, J. [HVM Plasma Ltd., Na Hutmance 2, Prague 5, CZ-158 00 (Czech Republic)

    2015-09-30

    In this work, we investigated the possibilities of tungsten and tungsten oxide nanoclusters generation by means of non-reactive and reactive magnetron sputtering with gas aggregation. It was found that in pure argon atmosphere, cluster aggregation proceeded in two regimes depending on argon pressure in the aggregation chamber. At the lower pressure, cluster generation was dominated by two-body collisions yielding larger clusters (about 5.5 nm in diameter) at lower rate. At higher pressures, cluster generation was dominated by three-body collisions yielding smaller clusters (3–4 nm in diameter) at higher rate. The small amount of oxygen admixture in the aggregation chamber had considerable influence on cluster aggregation process. At certain critical pressure, the presence of oxygen led to the raise of deposition rate and cluster size. Resulting clusters were composed mostly of tungsten trioxide. The oxygen pressure higher than critical led to the target poisoning and the decrease in the sputtering rate. Critical oxygen pressure decreased with increasing argon pressure, suggesting that cluster aggregation process was influenced by atomic oxygen species (namely, O{sup −} ion) generated by oxygen–argon collisions in the magnetron plasma. - Highlights: • Formation of tungsten and tungsten oxide clusters was observed. • Two modes of cluster aggregation in pure argon atmosphere were found. • Dependence of cluster deposition speed and size on oxygen admixture was observed. • Changes of dependence on oxygen with changing argon pressure were described.

  20. Observation of a periodic runaway in the reactive Ar/O{sub 2} high power impulse magnetron sputtering discharge

    Energy Technology Data Exchange (ETDEWEB)

    Shayestehaminzadeh, Seyedmohammad, E-mail: ses30@hi.is, E-mail: shayesteh@mch.rwth-aachen.de; Arnalds, Unnar B.; Magnusson, Rögnvaldur L.; Olafsson, Sveinn [Science Institute, University of Iceland, Dunhaga 3, IS-107 Reykjavik (Iceland)

    2015-11-15

    This paper reports the observation of a periodic runaway of plasma to a higher density for the reactive discharge of the target material (Ti) with moderate sputter yield. Variable emission of secondary electrons, for the alternating transition of the target from metal mode to oxide mode, is understood to be the main reason for the runaway occurring periodically. Increasing the pulsing frequency can bring the target back to a metal (or suboxide) mode, and eliminate the periodic transition of the target. Therefore, a pulsing frequency interval is defined for the reactive Ar/O{sub 2} discharge in order to sustain the plasma in a runaway-free mode without exceeding the maximum power that the magnetron can tolerate.

  1. Current-pressure dependencies of dc magnetron discharge in inert gases

    Science.gov (United States)

    Serov, A. O.; Mankelevich, Yu A.; Pal, A. F.; Ryabinkin, A. N.

    2016-11-01

    The current-pressure (I-P) characteristics of dc magnetron discharge in inert gases (Ar, Kr and Xe) for various constant discharge voltages were measured. Under certain conditions on I-P characteristic, the nonmonotonic region of local maximum followed by a minimum is observed. It is found that increasing mass of the working gas ions results in a shift of the local maximum to lower pressures. The spatial distribution of ions in the plasma was studied by optical emission spectroscopy. Transformation of the discharge spatial structure with pressure was observed. A qualitative model of the observed trends is presented. It takes into account the pressure dependence of the discharge spatial structure, the capturing of secondary electrons by the cathode and charge exchange effects.

  2. Direct current magnetron sputter-deposited ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Hoon, Jian-Wei [Faculty of Engineering, Multimedia University, Persiaran Multimedia, 63100 Cyberjaya, Selangor (Malaysia); Chan, Kah-Yoong, E-mail: kychan@mmu.edu.my [Faculty of Engineering, Multimedia University, Persiaran Multimedia, 63100 Cyberjaya, Selangor (Malaysia); Krishnasamy, Jegenathan; Tou, Teck-Yong [Faculty of Engineering, Multimedia University, Persiaran Multimedia, 63100 Cyberjaya, Selangor (Malaysia); Knipp, Dietmar [School of Engineering and Science, Jacobs University Bremen, 28759 Bremen (Germany)

    2011-01-15

    Zinc oxide (ZnO) is a very promising electronic material for emerging transparent large-area electronic applications including thin-film sensors, transistors and solar cells. We fabricated ZnO thin films by employing direct current (DC) magnetron sputtering deposition technique. ZnO films with different thicknesses ranging from 150 nm to 750 nm were deposited on glass substrates. The deposition pressure and the substrate temperature were varied from 12 mTorr to 25 mTorr, and from room temperature to 450 deg. C, respectively. The influence of the film thickness, deposition pressure and the substrate temperature on structural and optical properties of the ZnO films was investigated using atomic force microscopy (AFM) and ultraviolet-visible (UV-Vis) spectrometer. The experimental results reveal that the film thickness, deposition pressure and the substrate temperature play significant role in the structural formation and the optical properties of the deposited ZnO thin films.

  3. Electrical and optical properties of reactive dc magnetron sputtered silver-doped indium oxide thin films: role of oxygen

    Energy Technology Data Exchange (ETDEWEB)

    Subrahmanyam, A.; Barik, U.K. [Indian Institute of Technology Madras, Semiconductor Physics Laboratory, Department of Physics, Chennai (India)

    2006-07-15

    Silver-doped indium oxide thin films have been prepared on glass and quartz substrates at room temperature (300 K) by a reactive dc magnetron sputtering technique using an alloy target of pure indium and silver (80:20 at. %). During sputtering, the oxygen flow rates are varied in the range 0.00-2.86 sccm keeping the magnetron power constant at 40 W. The resistivity of these films is in the range 10{sup 0}-10{sup -3} {omega}cm and they show a negative temperature coefficient of resistivity. The films exhibit p-type conductivity at an oxygen flow rate of 1.71 sccm. The work function of these silver-indium oxide films has been measured by a Kelvin probe technique. The refractive index of the films (at 632.8 nm) varies in the range 1.13-1.20. Silver doping in indium oxide narrows the band gap of indium oxide (3.75 eV). (orig.)

  4. Incorporation of N in TiO{sub 2} films grown by DC-reactive magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Serio, S. [CEFITEC, Departamento de Fisica, Faculdade de Ciencias e Tecnologia da Universidade Nova de Lisboa, 2829-516 Caparica (Portugal); Melo Jorge, M.E. [CCMM, Departamento de Quimica e Bioquimica, Faculdade de Ciencias da Universidade de Lisboa, Campo Grande C8, 1749-016 Lisboa (Portugal); Nunes, Y. [CEFITEC, Departamento de Fisica, Faculdade de Ciencias e Tecnologia da Universidade Nova de Lisboa, 2829-516 Caparica (Portugal); Barradas, N.P. [Instituto Tecnologico e Nuclear and CFNUL, E.N. 10, Sacavem 2686-953 (Portugal); Alves, E., E-mail: ealves@itn.pt [Instituto Tecnologico e Nuclear and CFNUL, E.N. 10, Sacavem 2686-953 (Portugal); Munnik, F. [Helmholtz-Zentrum Dresden-Rossendorf (Germany)

    2012-02-15

    Photocatalytic properties of TiO{sub 2} are expected to play an important role on emerging technologies based on OH radicals to destroy harmful nonbiodegradable organic and inorganic contaminants in water. The drawback is the wide band gap of TiO{sub 2} (3.2 eV) limiting its use to the UV part of electromagnetic spectrum under sunlight. Therefore, modifications of TiO{sub 2} are needed to tune the gap in order to allow an efficient use of the entire solar spectrum. One possibility is N-doping of TiO{sub 2} to make the photocatalytic activity possible under visible light and more suitable for water treatment. In our study nitrogen-doped TiO{sub 2} (TiO{sub 2-x}N{sub x}) films were deposited by DC-reactive magnetron sputtering using a dual-magnetron co-deposition apparatus on unheated glass and silicon substrates using a pure titanium target. The depth profile of nitrogen was measured with heavy ion elastic recoil detection analysis combined with Rutherford backscattering spectrometry (RBS) and correlated with the optical and structural properties obtained by UV-VIS spectroscopy and X-ray diffraction (XRD).

  5. BiVO4 photoanodes for water splitting with high injection efficiency, deposited by reactive magnetron co-sputtering

    Science.gov (United States)

    Gong, Haibo; Freudenberg, Norman; Nie, Man; van de Krol, Roel; Ellmer, Klaus

    2016-04-01

    Photoactive bismuth vanadate (BiVO4) thin films were deposited by reactive co-magnetron sputtering from metallic Bi and V targets. The effects of the V-to-Bi ratio, molybdenum doping and post-annealing on the crystallographic and photoelectrochemical (PEC) properties of the BiVO4 films were investigated. Phase-pure monoclinic BiVO4 films, which are more photoactive than the tetragonal BiVO4 phase, were obtained under slightly vanadium-rich conditions. After annealing of the Mo-doped BiVO4 films, the photocurrent increased 2.6 times compared to undoped films. After optimization of the BiVO4 film thickness, the photocurrent densities (without a catalyst or a blocking layer or a hole scavenger) exceeded 1.2 mA/cm2 at a potential of 1.23 VRHE under solar AM1.5 irradiation. The surprisingly high injection efficiency of holes into the electrolyte is attributed to the highly porous film morphology. This co-magnetron sputtering preparation route for photoactive BiVO4 films opens new possibilities for the fabrication of large-scale devices for water splitting.

  6. BiVO4 photoanodes for water splitting with high injection efficiency, deposited by reactive magnetron co-sputtering

    Directory of Open Access Journals (Sweden)

    Haibo Gong

    2016-04-01

    Full Text Available Photoactive bismuth vanadate (BiVO4 thin films were deposited by reactive co-magnetron sputtering from metallic Bi and V targets. The effects of the V-to-Bi ratio, molybdenum doping and post-annealing on the crystallographic and photoelectrochemical (PEC properties of the BiVO4 films were investigated. Phase-pure monoclinic BiVO4 films, which are more photoactive than the tetragonal BiVO4 phase, were obtained under slightly vanadium-rich conditions. After annealing of the Mo-doped BiVO4 films, the photocurrent increased 2.6 times compared to undoped films. After optimization of the BiVO4 film thickness, the photocurrent densities (without a catalyst or a blocking layer or a hole scavenger exceeded 1.2 mA/cm2 at a potential of 1.23 VRHE under solar AM1.5 irradiation. The surprisingly high injection efficiency of holes into the electrolyte is attributed to the highly porous film morphology. This co-magnetron sputtering preparation route for photoactive BiVO4 films opens new possibilities for the fabrication of large-scale devices for water splitting.

  7. Structural and optical properties of ZnO fabricated by reactive e-beam and rf magnetron sputtering techniques

    Energy Technology Data Exchange (ETDEWEB)

    Al Asmar, R.; Ferblantier, G.; Mailly, F.; Foucaran, A. [Centre d' Electronique et de Micro-optoelectronique de Montpellier, Unite mixte de Recherche du CNRS n 5507, Universite Montpellier II, Place E. Bataillon, 34095 Montpellier (France)

    2005-03-01

    Zinc oxide thin films have been grown on (100)-oriented silicon substrate by reactive e-beam evaporation and rf magnetron sputtering techniques and a comparative study is discussed in this paper. Structural, electrical and optical characteristics have been studied before and after annealing in air by measurements of X-ray diffraction, real parts of the dielectric coefficient, and electrical resistivity. X-ray diffraction measurements have shown that ZnO films are highly c-axis-oriented with a full width at half maximum (FWMH) lower than 0.5 . The electrical resistivity is about 10{sup 11} {omega}.cm for magnetron sputtered films and it increases from 10{sup -2} {omega}.cm to about 10{sup 9} {omega}.cm after annealing at 750 C for electron beam evaporated films. Ellipsometry measurements have shown some improvement of the real dielectric coefficient after annealing treatment at 750 C of the ZnO evaporated by electron beam. The AFM images show that the surfaces of the e-beam evaporated ZnO and of the sputtered ZnO are relatively smooth. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  8. The Effect of Ion Current Density on Target Etching in Radio Frequency-Magnetron Sputtering Process

    Institute of Scientific and Technical Information of China (English)

    王庆; 王永富; 巴德纯; 岳向吉

    2012-01-01

    The effect of ion current density of argon plasma on target sputtering in magnetron sputtering process was investigated. Using home-made ion probe with computer-based data acquisition system, the ion current density as functions of discharge power, gas pressure and positions was measured. A double-hump shape was found in ion current density curve after the analysis of the effects of power and pressure. The data demonstrate that ion current density increases with the increase in gas pressure in spite of slightly at the double-hump site, sharply at wave-trough and side positions. Simultaneously, the ion current density increases upon increase in power. Es- pecially, the ion current density steeply increases at the double-hump site. The highest energy of the secondary electrons arising from Larmor precession was found at the double-hump position, which results in high ion density. The target was etched seriously at the double-hump position due to the high ion density there. The data indicates that the increase in power can lead to a high sputtering speed rate.

  9. Microstructure, mechanical properties and cutting performance of superhard (Ti,Si,Al)N nanocomposite films grown by d.c. reactive magnetron sputtering

    NARCIS (Netherlands)

    Carvalho, S; Ribeiro, E; Rebouta, L; Tavares, CJ; Mendonca, JP; Monteiro, AC; Carvalho, NJM; De Hosson, JTM; Cavaleiro, A

    2004-01-01

    This paper reports on the optimization of coating properties to improve the performance of tools in severe cutting conditions. Tungsten carbide tools coated with (Ti,Si,AI)N films deposited by d.c. reactive magnetron sputtering have been investigated. The structure and the hardness of the coated sam

  10. STUDY ON Ni-Cr SYSTEM SOLAR SELECTIVE THIN FILMS PREPARED BY MAGNETRON REACTIVE SPUTTERING PROCESS

    Institute of Scientific and Technical Information of China (English)

    B.W. Wang; H. Shen

    2002-01-01

    Ni-Cr System solar selective thin solid films were prepared by d.c. magnetron reactivesputtering under the atmosphere of O2 and N2. Ni-Cr alloy was chosen as targetmaterial and copper sheets as substrate. Using SEM, Spectrophotometer and Talystepto analyze the relations between the selective characteristic and the structure, theformation and the thickness of the thin films. The aim is to obtain good solar selectivethin films with high absorptance and low emittance, which is applied to flat plate solarheat collectors.

  11. Substrate Temperature Dependent Properties of Cu Doped NiO Films Deposited by DC Reactive Magnetron Sputtering

    Institute of Scientific and Technical Information of China (English)

    Yarraguntla Ashok Kumar Reddy; Akepati Sivasankar Reddy; Pamanji Sreedhara Reddy

    2013-01-01

    The NiO-Cu composite films were deposited on a glass substrate at various substrate temperatures by DC reactive magnetron sputtering technique.The effect of substrate temperature on the structural,optical,morphological and electrical properties of the films was mainly investigated.X-ray diffraction studies revealed that when the substrate temperature increased to above 200 C,the preferred orientation tended to move to another preferred site from (220) to (111) and had a stable cubic structure.The optical transmittance and band gap values increased with increasing substrate temperature.From the morphological studies,it was observed that the grain size and root mean square roughness were increased with increasing substrate temperature.The electrical resistivity of the film decreased to 0.017 Ω cm at high substrate temperature of 400 C.

  12. OPTICAL CHARACTERIZATION OF TiO2 THIN FILM ON SILICON SUBSTRATE DEPOSITED BY DC REACTIVE MAGNETRON SPUTTERING

    Institute of Scientific and Technical Information of China (English)

    H.Q. Wang; H. Shen; D.C. Ba; B.W. Wang; L.S. Wen; D. Chen

    2005-01-01

    TiO2 thin film has attracted considerable attention in recent years, due to its different refractive index and transparency with amorphous and different crystals in the visible and near-infrared wavelength region, high dielectric constant, wide band gap, high wear resistance and stability, etc, for which make it being used in many fields. This paper aims to investigate the optical characterization of thin film TiO2 on silicon wafer. The TiO2 thin films were prepared by DC reactive magnetron sputtering process from Ti target. The reflectivity of the films was measured by UV-3101PC, and the index of refraction (n) and extinction coefficient (k) were measured by n & k Analyzer 1200.

  13. Effects of oxygen partial pressure on optical properties of NiOX films deposited by reactive DC-magnetron sputtering

    Institute of Scientific and Technical Information of China (English)

    Ying Zhou; Yongyou Geng; Donghong Gu

    2006-01-01

    The influence of oxygen partial pressure on the optical properties of NiOX thin films deposited by reactive DC-magnetron sputtering from a nickel metal target in a mixture gas of oxygen and argon was presented.With the oxygen ratio increasing, the reflectivity of the as-deposited films decreased, and optical band gap increased. Thermogravimetric analysis (TGA) showed that the decompose temperature of the films was above 250 ℃. After annealed at 400 ℃, only films deposited at 5% O2/Ar ratio showed high opticalcontrast which was about 52%. Scanning electron microscope (SEM) results revealed that the changes ofsurface morphology were responsible for the optical property variations of the films after annealing. Itsthermal stability and high optical contrast before and after annealing made it a good potential write-onceoptical recording medium.

  14. Native target chemistry during reactive dc magnetron sputtering studied by ex-situ x-ray photoelectron spectroscopy

    Science.gov (United States)

    Greczynski, G.; Mráz, S.; Schneider, J. M.; Hultman, L.

    2017-07-01

    We report x-ray photoelectron spectroscopy (XPS) analysis of native Ti target surface chemistry during magnetron sputtering in an Ar/N2 atmosphere. To avoid air exposure, the target is capped immediately after sputtering with a few-nm-thick Al overlayers; hence, information about the chemical state of target elements as a function of N2 partial pressure pN2 is preserved. Contrary to previous reports, which assume stoichiometric TiN formation, we present direct evidence, based on core-level XPS spectra and TRIDYN simulations, that the target surface is covered by TiNx with x varying in a wide range, from 0.27 to 1.18, depending on pN2. This has far-reaching consequences both for modelling of the reactive sputtering process and for everyday thin film growth where detailed knowledge of the target state is crucial.

  15. Optoelectronic and electrochemical properties of nickel oxide (NiO) films deposited by DC reactive magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Subramanian, B. [Electrochemical Materials Science Division, Central Electrochemical Research Institute, Karaikudi 630 006 (India); Mohamed Ibrahim, M. [Birla Institute of Technology and Science, Pilani, Dubai (United Arab Emirates); Senthilkumar, V. [School of Physics, Alagappa University, Karaikudi 630 003 (India); Murali, K.R.; Vidhya, VS. [Electrochemical Materials Science Division, Central Electrochemical Research Institute, Karaikudi 630 006 (India); Sanjeeviraja, C. [School of Physics, Alagappa University, Karaikudi 630 003 (India); Jayachandran, M. [Electrochemical Materials Science Division, Central Electrochemical Research Institute, Karaikudi 630 006 (India)], E-mail: jayam54@yahoo.com

    2008-11-30

    Nickel oxide (NiO) thin films were deposited onto glass substrates by the DC reactive magnetron sputtering technique. The as-deposited films were post-annealed in air at 450-500 deg. C for 5 h. The effect of annealing on the structural, microstructural, electrical and optical properties were studied by X-ray diffraction (XRD), atomic force microscope (AFM), four-probe resistivity measurement and UV-vis spectrophotometer. XRD studies indicated cubic structure with a lattice parameter of 0.4193 nm. The band gap of the films was found to be 3.58 eV. Fourier transform infrared (FTIR) studies indicated a broad spectrum centered at 451.6 cm{sup -1}. Photoluminescence studies exhibited room temperature emission at 440 nm. Cyclic voltammetry studies in 1 M KOH solution revealed the electrochromic nature of the NiO films prepared in the present study.

  16. Physical vapour deposition reactive magnetron sputtering for the production and application of dichroics in photovoltaic system with solar spectral splitting

    Energy Technology Data Exchange (ETDEWEB)

    Raniero, W., E-mail: walter.raniero@unitn.it [Department of Industrial Engineering, University of Trento, Via Sommarive 9, 38123 Trento (Italy); INFN – Legnaro National Laboratories, Viale dell’Università 2, 35020 Legnaro, PD (Italy); Campostrini, M., E-mail: m.campostrini.1@studenti.unitn.it [Department of Industrial Engineering, University of Trento, Via Sommarive 9, 38123 Trento (Italy); Maggioni, G., E-mail: Gianluigi.Maggioni@lnl.infn.it [Department of Physics and Astronomy, University of Padua, Padua (Italy); INFN – Legnaro National Laboratories, Viale dell’Università 2, 35020 Legnaro, PD (Italy); Mea, G. Della, E-mail: dellamea@ing.unitn.it [Department of Industrial Engineering, University of Trento, Via Sommarive 9, 38123 Trento (Italy); INFN – Legnaro National Laboratories, Viale dell’Università 2, 35020 Legnaro, PD (Italy); Quaranta, A., E-mail: quaranta@ing.unitn.it [Department of Industrial Engineering, University of Trento, Via Sommarive 9, 38123 Trento (Italy); INFN – Legnaro National Laboratories, Viale dell’Università 2, 35020 Legnaro, PD (Italy)

    2014-07-01

    This paper aims at designing, producing and characterizing a series of dichroic filters that are made up of a stack of layers with variable nanometer thickness. Such filters are created by PVD reactive magnetron sputtering, obtaining SiO{sub 2} and TiO{sub 2} through an active oxidation during the deposition. The single layers have then been analyzed using different techniques including RBS (Rutherford Backscattering Spectrometry) to determine the stoichiometry, AFM (Atomic Force Microscope) to assess the deposition rate, and UV–vis–NIR spectrophotometric analysis to evaluate the optical response. The application of the dichroic in concentration photovoltaic systems, separates the solar radiation in two optical spectral bands [7], that allows to couple them with a different solar cells which have dedicated external quantum efficiency. The optical separation using dichroic filters allows to combine different photovoltaic cells with an appropriate energy gap, thus optimizing the photovoltaic conversion.

  17. Effect of oxygen flow rate on the properties of SiOx films deposited by reactive magnetron sputtering

    Institute of Scientific and Technical Information of China (English)

    Fachun Lai; Ming Li; Haiqian Wang; Yousong Jiang; Yizhou Song

    2005-01-01

    @@ SiOx (x = 0- 2) films were deposited on BK-7 substrates by a low frequency reactive magnetron sputtering system with the oxygen flow rate (OFR) changing from 0 to 30 sccm. The samples were characterized by atomic force microscopy, spectrophotometer, and X-ray photoelectron spectroscopy. The extinction coefficient and refractive index decrease, while the optical transmittance increases with the increase of OFR from 0 to 17 sccm. The root mean square surface roughness has a maximum at 10 sccm OFR. The highest deposition rate is at 15 sccm OFR. Our results show that the films deposited at 20 sccm OFR are stoichiometric silica with relatively high deposition rate, low extinction coefficient, and low surface roughness. Therefore, a precise control of OFR is very important to obtain high quality films for optical applications.

  18. Bonding structure and morphology of chromium oxide films grown by pulsed-DC reactive magnetron sputter deposition

    Energy Technology Data Exchange (ETDEWEB)

    Gago, R., E-mail: rgago@icmm.csic.es [Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Científicas, E-28049 Madrid (Spain); Vinnichenko, M. [Fraunhofer-Institut für Keramische Technologien und Systeme IKTS, D-01277 Dresden (Germany); Hübner, R. [Helmholtz-Zentrum Dresden – Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstraße 400, 01328 Dresden (Germany); Redondo-Cubero, A. [Departamento de Física Aplicada and Centro de Microanálisis de Materiales, Universidad Autónoma de Madrid, E-28049 Madrid (Spain)

    2016-07-05

    Chromium oxide (CrO{sub x}) thin films were grown by pulsed-DC reactive magnetron sputter deposition in an Ar/O{sub 2} discharge as a function of the O{sub 2} fraction in the gas mixture (ƒ) and for substrate temperatures, T{sub s}, up to 450 °C. The samples were analysed by Rutherford backscattering spectrometry (RBS), spectroscopic ellipsometry (SE), atomic force microscopy (AFM), scanning (SEM) and transmission (TEM) electron microscopy, X-ray diffraction (XRD), and X-ray absorption near-edge structure (XANES). On unheated substrates, by increasing ƒ the growth rate is higher and the O/Cr ratio (x) rises from ∼2 up to ∼2.5. Inversely, by increasing T{sub s} the atomic incorporation rate drops and x falls to ∼1.8. XRD shows that samples grown on unheated substrates are amorphous and that nanocrystalline Cr{sub 2}O{sub 3} (x = 1.5) is formed by increasing T{sub s}. In amorphous CrO{sub x}, XANES reveals the presence of multiple Cr environments that indicate the growth of mixed-valence oxides, with progressive promotion of hexavalent states with ƒ. XANES data also confirms the formation of single-phase nanocrystalline Cr{sub 2}O{sub 3} at elevated T{sub s}. These structural changes also reflect on the optical and morphological properties of the films. - Highlights: • XANES of CrO{sub x} thin films grown by pulsed-DC reactive magnetron sputtering. • Identification of mixed-valence amorphous CrO{sub x} oxides on unheated substrates. • Promotion of amorphous chromic acid (Cr{sup VI}) by increasing O{sub 2} partial pressure. • Production of single-phase Cr{sub 2}O{sub 3} films by increasing substrate temperature. • Correlation of bonding structure with morphological and optical properties.

  19. Bioactivity response of Ta{sub 1-x}O{sub x} coatings deposited by reactive DC magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Almeida Alves, C.F., E-mail: cristiana.alves@fisica.uminho.pt [GRF-CFUM, Physics Departament, University of Minho, Campus of Azurem, Guimaraes 4800-058 (Portugal); Cavaleiro, A. [SEG-CEMUC, Mechanical Engineering Department, University of Coimbra, Coimbra 3030-788 (Portugal); Carvalho, S. [GRF-CFUM, Physics Departament, University of Minho, Campus of Azurem, Guimaraes 4800-058 (Portugal); SEG-CEMUC, Mechanical Engineering Department, University of Coimbra, Coimbra 3030-788 (Portugal)

    2016-01-01

    The use of dental implants is sometimes accompanied by failure due to periimplantitis disease and subsequently poor esthetics when soft–hard tissue margin recedes. As a consequence, further research is needed for developing new bioactive surfaces able to enhance the osseous growth. Tantalum (Ta) is a promising material for dental implants since, comparing with titanium (Ti), it is bioactive and has an interesting chemistry which promotes the osseointegration. Another promising approach for implantology is the development of implants with oxidized surfaces since bone progenitor cells interact with the oxide layer forming a diffusion zone due to its ability to bind with calcium which promotes a stronger bond. In the present report Ta-based coatings were deposited by reactive DC magnetron sputtering onto Ti CP substrates in an Ar + O{sub 2} atmosphere. In order to assess the osteoconductive response of the studied materials, contact angle and in vitro tests of the samples immersed in Simulated Body Fluid (SBF) were performed. Structural results showed that oxide phases where achieved with larger amounts of oxygen (70 at.% O). More compact and smooth coatings were deposited by increasing the oxygen content. The as-deposited Ta coating presented the most hydrophobic character (100°); with increasing oxygen amount contact angles progressively diminished, down to the lowest measured value, 63°. The higher wettability is also accompanied by an increase on the surface energy. Bioactivity tests demonstrated that highest O-content coating, in good agreement with wettability and surface energy values, showed an increased affinity for apatite adhesion, with higher Ca/P ratio formation, when compared to the bare Ti substrates. - Highlights: • Ta{sub 1-x}O{sub x} coatings were deposited by reactive DC magnetron sputtering. • Amorphous oxide phases were achieved with higher oxygen amounts. • Contact angles progressively diminished, with increasing oxygen content. • Ta

  20. A global plasma model for reactive deposition of compound films by modulated pulsed power magnetron sputtering discharges

    Science.gov (United States)

    Zheng, B. C.; Wu, Z. L.; Wu, B.; Li, Y. G.; Lei, M. K.

    2017-05-01

    A spatially averaged, time-dependent global plasma model has been developed to describe the reactive deposition of a TiAlSiN thin film by modulated pulsed power magnetron sputtering (MPPMS) discharges in Ar/N2 mixture gas, based on the particle balance and the energy balance in the ionization region, and considering the formation and erosion of the compound at the target surface. The modeling results show that, with increasing the N2 partial pressure from 0% to 40% at a constant working pressure of 0.3 Pa, the electron temperature during the strongly ionized period increases from 4 to 7 eV and the effective power transfer coefficient, which represents the power fraction that effectively heats the electrons and maintains the discharge, increases from about 4% to 7%; with increasing the working pressure from 0.1 to 0.7 Pa at a constant N2 partial pressure of 25%, the electron temperature decreases from 10 to 4 eV and the effective power transfer coefficient decreases from 8% to 5%. Using the modeled plasma parameters to evaluate the kinetic energy of arriving ions, the ion-to-neutral flux ratio of deposited species, and the substrate heating, the variations of process parameters that increase these values lead to an enhanced adatom mobility at the target surface and an increased input energy to the substrate, corresponding to the experimental observation of surface roughness reduction, the microstructure transition from the columnar structure to the dense featureless structure, and the enhancement of phase separation. At higher N2 partial pressure or lower working pressure, the modeling results demonstrate an increase in electron temperature, which shifts the discharge balance of Ti species from Ti+ to Ti2+ and results in a higher return fraction of Ti species, corresponding to the higher Al/Ti ratio of deposited films at these conditions. The modeling results are well correlated with the experimental observation of the composition variation and the microstructure

  1. Nano-structured morphological features of pulsed direct current magnetron sputtered Mo films for photovoltaic applications

    Energy Technology Data Exchange (ETDEWEB)

    Karthikeyan, Sreejith, E-mail: s.karthikeyan@edu.salford.ac.uk; Hill, Arthur E.; Pilkington, Richard D.

    2011-10-31

    Historically, molybdenum thin films have been used as the back contact for Cu(In,Ga)Se{sub 2} based solar cells and as such the properties of these layers play an important role in the overall cell structure. This paper describes the production of molybdenum films using pulsed d.c. magnetron sputtering from compressed molybdenum powder targets. The films were deposited at different substrate temperatures under constant power and constant current modes, and analysed using X-ray diffraction, scanning electron microscopy, atomic force microscopy and four point resistance probe. Mechanical strain and resistivity were found to decrease with substrate temperature together with a shift in the (110) crystallographic plane towards higher diffraction angles. All films were well adhered to the glass substrates irrespective of their high tensile strain. Surface morphology analysis revealed the presence of nano-structured stress relief patterns which can enhance the nucleation sites for subsequent CuInSe{sub 2} deposition. A high-resolution cross sectional image showed the columnar growth of the films. Surface roughness analysis revealed that roughness increased with increase in substrate temperature.

  2. Structural and mechanical properties of diamond-like carbon films deposited by direct current magnetron sputtering

    Science.gov (United States)

    Broitman, E.; Hellgren, N.; Czigány, Zs.; Twesten, R. D.; Luning, J.; Petrov, I.; Hultman, L.; Holloway, B. C.

    2003-07-01

    The microstructure, morphology, and mechanical properties of diamond-like carbon (DLC) films deposited by direct current magnetron sputtering were investigated for microelectromechanical systems applications. Film properties were found to vary markedly with the ion energy (Eion) and ion-to-carbon flux ratio (Jion/JC). Cross-sectional high-resolution transmission electron microscopy revealed an amorphous microstructure. However, the presence of nanometer-sized domains at Eion~85 eV was detected. Film stresses, σ, which were compressive in all cases, ranged from 0.5 to 3.5 GPa and depended on the flux ratio as well as ion energy. The hardness (H), Young's moduli (ɛ), and elastic recovery (R) increased with Eion to maximum values of H=27 GPa, ɛ=250 GPa, and R=68% at Eion=85 eV and Jion/JC=4.4. However, near edge x-ray absorption fine structure and electron energy-loss spectrum analysis showed that the sp2/sp3 content of the films does not change with Eion or Jion/JC. The measured change in mechanical properties without a corresponding change in sp2/sp3 ratio is not consistent with any previously published models. We suggest that, in the ranges 5 eV <=Eion<=85 eV and 1.1 <=Jion/JC<=6.8, the presence of defective graphite formed by subplanted C and Ar atoms has the dominant influence on the mechanical properties of DLC films.

  3. Comparison of hydrophilic properties of TiO{sub 2} thin films prepared by sol-gel method and reactive magnetron sputtering system

    Energy Technology Data Exchange (ETDEWEB)

    Nam, S.-H., E-mail: askaever@skku.edu [Department of Chemistry, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Cho, S.-J.; Jung, C.-K. [Department of Chemistry, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Boo, J.-H., E-mail: jhboo@skku.edu [Department of Chemistry, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Sicha, J.; Herman, D.; Musil, J.; Vlcek, J. [Department of Physics, University of West Bohemia, Univerzitni 22, 306 14 Plzen (Czech Republic)

    2011-08-01

    This article reports on preparation, characterization and comparison of TiO{sub 2} films prepared by sol-gel method using the titanium isopropoxide sol (TiO{sub 2} coating sol 3%) as solvent precursor and reactive magnetron sputtering from substoichiometric TiO{sub 2-x} targets of 50 mm in diameter. Dual magnetron supplied by dc bipolar pulsed power source was used for reactive magnetron sputtering. Depositions were performed on unheated glass substrates. Comparison of photocatalytic properties was based on measurements of hydrophilicity, i.e. evaluation of water contact angle on the film surface after UV irradiation. It is shown, that TiO{sub 2} films prepared by the sol-gel method exhibited higher hydrophilicity in the as-deposited state but has significant deterioration of hydrophilicity during aging, compared to TiO{sub 2} films prepared by magnetron sputtering. To explain this effect AFM, SEM and high resolution XPS measurements were performed. It is shown that the deterioration of hydrophilicity of sol-gel TiO{sub 2} films can be suppressed if as-deposited films are exposed to the plasma of microwave oxygen discharge.

  4. Synergistic effect of bias and target currents for magnetron sputtered MoS{sub 2}-Ti composite films

    Energy Technology Data Exchange (ETDEWEB)

    Buelbuel, Ferhat; Efeoglu, Ihsan [Ataturk Univ., Erzurum (Turkey). Dept. of Mechanical Engineering

    2016-07-01

    In terms of modification of the properties of MoS{sub 2}-Ti composite films, especially tribological properties, significant advances have recently been recorded. However, the commercially production of MoS{sub 2}-Ti composite films is still limited, because the production of desirable MoS{sub 2}-Ti composite coating is only possible by using closed field unbalanced magnetron systems and by the selection of convenient deposition parameters. This requirement has focused the researchers' attention on optimization of deposition parameters. This study is concentrating on the effect of the bias voltage and the target currents for MoS{sub 2}-Ti composite films deposited by pulsed magnetron sputtering (PMS). It is found that the bias and the target currents clearly affect the mechanical, structural and tribological properties of MoS{sub 2}-Ti films.

  5. Reactive magnetron sputtering of CN{sub x} thin films at different substrate bias

    Energy Technology Data Exchange (ETDEWEB)

    Zheng, W.T.; Broitman, E.; Hellgren, N.; Xing, K.Z.; Ivanov, I.; Sjoestroem, H.; Hultman, L.; Sundgren, J.-E. [Linkoeping Univ. (Sweden). Dept. of Physics

    1997-10-31

    The chemical binding states of C and N atoms, and optical properties of carbon nitride (CN{sub x}) thin films deposited by unbalanced magnetron sputtering, have been investigated as a function of the negative substrate bias (V{sub s}). The film deposition rate increased slightly with increasing V{sub s}, having a weak maximum at floating potential (--50 V), and decreased sharply to zero for V{sub s}>150 V, while N/C ratios did not exhibit any significant variation. Raman spectroscopy was used to reveal that the structure of the film is predominantly amorphous. Fourier transform infra-red spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS) and electron energy loss spectroscopy (EELS) analyses showed that N atoms in the films were bound to C atoms through sp{sup 2} and sp{sup 3} configurations. Triple C-N bonds were also detected by FTIR. The ratio of sp{sup 3} to sp{sup 2} bonds increased with increasing V{sub s}. The maximum sp{sup 3} concentration in CN{sub x} films was estimated to be --20%. The optical band gap of CN{sub x} films was also found to increase with an increase in V{sub s}. (orig.) 19 refs.

  6. Preparation of zinc tin oxide films by reactive magnetron sputtering of Zn on liquid Sn

    Energy Technology Data Exchange (ETDEWEB)

    Pau, J.L., E-mail: joseluis.pau@uam.e [Laboratorio de Microelectronica, Dept. de Fisica Aplicada, Universidad Autonoma de Madrid, c/ Francisco Tomas y Valiente 7, 28049 Madrid (Spain); Scheffler, L.; Hernandez, M.J.; Cervera, M.; Piqueras, J. [Laboratorio de Microelectronica, Dept. de Fisica Aplicada, Universidad Autonoma de Madrid, c/ Francisco Tomas y Valiente 7, 28049 Madrid (Spain)

    2010-09-30

    Zn is sputter-deposited on melted Sn films by radio-frequency magnetron sputtering in oxidizing plasma. The samples present an absorption cut-off wavelength close to the one of ZnO, and an optical transparency higher than 50% in the visible range. Ex-situ thermal annealing improves visible transparency and produces a slight blue-shift in the optical bandgap. X-ray diffraction patterns show typical spectra due to polycrystalline ZnO with evidence of the presence of crystalline SnO, before annealing, and Zn{sub 2}SnO{sub 4}, after annealing. Rutherford Backscattering studies reveal the existence of a ZnO layer on top of an O-rich (Zn, Sn)O thin film. After optimal thermal treatment, electrical characterization exhibits carrier concentrations of 10{sup 16}-10{sup 17} cm{sup -3} and mobilities of 20-80 cm{sup 2} V{sup -1} s{sup -1} for the resulting (Zn, Sn)O n-type films.

  7. Hopping conduction in zirconium oxynitrides thin film deposited by reactive magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Guo, Jie; Zhan, Guanghui; Liu, Jingquan, E-mail: jqliu@sjtu.edu.cn; Yang, Bin; Xu, Bin; Feng, Jie; Chen, Xiang; Yang, Chunsheng

    2015-10-15

    Zirconium oxynitrides thin film thermometers were demonstrated to be useful temperature sensors. However, the basic conduction mechanism of zirconium oxynitrides films has been a long-standing issue, which hinders the prediction and optimization of their ultimate performance. In this letter, zirconium oxynitrides films were grown on sapphire substrates by magnetron sputtering and their electric transport mechanism has been systemically investigated. It was found that in high temperatures region (>150 K) the electrical conductivity was dominated by thermal activation for all samples. In the low temperatures range, while Mott variable hopping conduction (VRH) was dominated the transport for films with relatively low resistance, a crossover from Mott VRH conduction to Efros–Shklovskii (ES) VRH was observed for films with relatively high resistance. This low temperature crossover from Mott to ES VRH indicates the presence of a Coulomb gap (~7 meV). These results demonstrate the competing and tunable conduction mechanism in zirconium oxynitrides thin films, which would be helpful for optimizing the performance of zirconium oxynitrides thermometer.

  8. BN coatings deposition by magnetron sputtering of B and BN targets in electron beam generated plasma

    Science.gov (United States)

    Kamenetskikh, A. S.; Gavrilov, N. V.; Koryakova, O. V.; Cholakh, S. O.

    2017-05-01

    Boron nitride coatings were deposited by reactive pulsed magnetron sputtering of B and BN targets (50 kHz, 10 µs for B; 13.56 MHz for BN) at 2-20 mA/cm2 ion current density on the substrate. The effect of electron beam generated plasma on characteristics of magnetron discharge and phase composition of coatings was studied.

  9. Modelling of Magnetron Sputtering of Tungsten Oxide with Reactive Gas Pulsing

    OpenAIRE

    2007-01-01

    Reactive sputtering is one of the most commonly employed processes for the deposition of thin films. However, the range of applications is limited by inherent instabilities, which necessitates the use of a complex feedback control of reactive gas (RG) partial pressure. Recently pulsing of the RG has been suggested as a possible alternative. In this report, the concept of periodically switching the RG flow between two different values is applied to the deposition of tungsten oxide. The trends ...

  10. Effect of reactive magnetron sputtering parameters on structural and electrical properties of hafnium oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Szymańska, Magdalena, E-mail: magdalena_szymanska@its.waw.pl [Warsaw University of Technology, Institute of Microelectronics and Optoelectronics, Koszykowa 75, 00-662 Warsaw (Poland); Motor Transport Institute, Jagiellońska 80, 03-301 Warsaw (Poland); Gierałtowska, Sylwia; Wachnicki, Łukasz [Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw (Poland); Grobelny, Marcin; Makowska, Katarzyna [Motor Transport Institute, Jagiellońska 80, 03-301 Warsaw (Poland); Mroczyński, Robert [Warsaw University of Technology, Institute of Microelectronics and Optoelectronics, Koszykowa 75, 00-662 Warsaw (Poland)

    2014-05-01

    Highlights: • Structural and electrical characterization of HfO{sub x} and HfO{sub x}N{sub y} thin films. • Analysis of the influence of deposition process parameters on properties of films. • Investigation of the post-deposition annealing on HfO{sub x} and HfO{sub x}N{sub y} properties. • Experiment has been designed with use of Taguchi's orthogonal arrays. • The most favorable annealing temperature of HfO{sub x} and HfO{sub x}N{sub y} is 300 °C. - Abstract: The purpose of this work was to compare the structural and electrical properties of magnetron sputtered hafnium oxide (HfO{sub x}) and hafnium oxynitride (HfO{sub x}N{sub y}) thin films. A careful analysis of the influence of deposition process parameters, among them: pressure in the reactor chamber, Ar and O{sub 2} flow rate, power applied to the reactor chamber and deposition time, on electro-physical properties of HfO{sub x} and HfO{sub x}N{sub y} layers has been performed. In the course of this work we performed number of experiments by means of Taguchi's orthogonal arrays approach. Such a method allowed for the determination of dielectric layers properties depending on process parameters with relatively low amount of experiments. Moreover, the effects of post-deposition annealing on electrical characteristics of metal–insulator–semiconductor (MIS) structures with HfO{sub x} or HfO{sub x}N{sub y} gate dielectric and its structural properties have also been reported. Investigated hafnia thin films were characterized by means of spectroscopic ellipsometry (SE), electrical characteristics measurements, atomic force microscopy (AFM), X-ray diffraction spectroscopy (XRD) and Rutherford backscattering spectrometry (RBS)

  11. Magnetron reactively sputtered Ti-DLC coatings on HNBR rubber : The influence of substrate bias

    NARCIS (Netherlands)

    Bui, X.L.; Pei, Y.T.; Hosson, J.Th.M. De

    2008-01-01

    In this study, Ti-containing diamond-like carbon (Ti-DLC) coatings have been deposited on HNBR (hydrogenated nitrile butadiene) rubber and also on Si wafer as reference via unbalanced magnetroli reactive sputtering from a Ti target in C2H2/Ar plasma. The deposition rates of coatings on rubber and Si

  12. Composition and morphology of metal-containing diamond-like carbon films obtained by reactive magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Corbella, C. [FEMAN Group, Departament de Fisica Aplicada i Optica, Universitat de Barcelona, Av. Diagonal 647, E08028 Barcelona (Spain)]. E-mail: corbella@ub.edu; Pascual, E. [FEMAN Group, Departament de Fisica Aplicada i Optica, Universitat de Barcelona, Av. Diagonal 647, E08028 Barcelona (Spain); Oncins, G. [Serveis Cientificotecnics, Universitat de Barcelona, PCB, c/ Josep Samitier 1-5, E08028 Barcelona (Spain); Canal, C. [Departamento de Tecnologia de Tensioactivos IQAB-CSIC, c/ Jordi Girona 18-26, E08034 Barcelona (Spain); Andujar, J.L. [FEMAN Group, Departament de Fisica Aplicada i Optica, Universitat de Barcelona, Av. Diagonal 647, E08028 Barcelona (Spain); Bertran, E. [FEMAN Group, Departament de Fisica Aplicada i Optica, Universitat de Barcelona, Av. Diagonal 647, E08028 Barcelona (Spain)

    2005-06-22

    The addition of metal atoms within the matrix of diamond-like carbon films leads to the improvement of their mechanical properties. The present paper discusses the relationship between the composition and morphology of metal-containing (W, Nb, Mo, Ti) diamond-like carbon thin films deposited at room temperature by reactive magnetron sputtering from a metal target in an argon and methane atmosphere. Composition was measured either by electron microprobe technique or by X-ray photoelectron spectroscopy and shows a smooth variation with relative methane flow. High relative methane flows lead to a bulk saturation of carbon atoms, which leads to a lack of homogeneity in the films as confirmed by secondary ion mass spectrometry. Cross-section micrographs were observed by transmission electron microscopy and revealed a structure strongly influenced by the metal inserted and its abundance. The surface pattern obtained by scanning electrochemical potential microscopy provided the metallicity distribution. These measurements were completed with atomic force microscopy of the surface. Selected area electron diffraction and X-ray diffraction measurements provided data of the crystalline structure along with nano-crystallite size. High-resolution transmission electron microscopy provided images of these crystallites.

  13. Hydrogen related crystallization in intrinsic hydrogenated amorphous silicon films prepared by reactive radiofrequency magnetron sputtering at low temperature

    Energy Technology Data Exchange (ETDEWEB)

    Senouci, D. [Laboratoire de Genie Physique, Universite Ibn-Khaldoun, 14000 Tiaret (Algeria); LPCMME, Departement de Physique, Universite d' Oran Es-senia, 3100, Oran (Algeria); Baghdad, R., E-mail: r_baghdad@mail.univ-tiaret.dz [Laboratoire de Genie Physique, Universite Ibn-Khaldoun, 14000 Tiaret (Algeria); Belfedal, A.; Chahed, L. [LPCMME, Departement de Physique, Universite d' Oran Es-senia, 3100, Oran (Algeria); Portier, X. [CIMAP, CEA, CNRS UMR 6252-ENSICAEN, UCBN, 6 Bvd Marechal Juin, 14050 Caen Cedex (France); Charvet, S. [LPMC, UFR des Sciences, Universite de Picardie Jules Verne, 33 rue Saint-Leu, 80039 Amiens (France); Kim, K.H. [LPICM, Laboratoire de Physique des Interfaces et Couches Minces, CNRS UMR 7647, Ecole Polytechnique, 91128 Palaiseau (France); TOTAL S.A., Gas and Power, R and D Division, Courbevoie (France); Roca i Cabarrocas, P. [LPICM, Laboratoire de Physique des Interfaces et Couches Minces, CNRS UMR 7647, Ecole Polytechnique, 91128 Palaiseau (France); Zellama, K. [LPMC, UFR des Sciences, Universite de Picardie Jules Verne, 33 rue Saint-Leu, 80039 Amiens (France)

    2012-11-01

    We present an investigation on the transition from amorphous to nanocrystalline silicon and associated hydrogen changes during the first steps of hydrogenated nanocrystalline silicon growth for films elaborated by reactive radiofrequency magnetron sputtering at a substrate temperature as low as room temperature and for deposition times varying from 3 to 60 min. Complementary experimental techniques have been used to characterize the films in their as-deposited state. They are completed by thermal hydrogen effusion experiments conducted in the temperature range, from room temperature to 800 Degree-Sign C. The results show that, during the initial stages of growth, the presence of a hydrogen-rich layer is necessary to initiate the crystallization process. - Highlights: Black-Right-Pointing-Pointer Nanocrystalline silicon growth at room temperature. Black-Right-Pointing-Pointer Transition from amorphous to nanocrystalline silicon. Black-Right-Pointing-Pointer Chemical reactions of H atoms with strained Si-Si bonds. Black-Right-Pointing-Pointer H selective etching and chemical transport caused the silicon nucleation.

  14. Optical and chemical properties of mixed-valent rhenium oxide films synthesized by reactive DC magnetron sputtering

    Science.gov (United States)

    Murphy, Neil R.; Gallagher, Regina C.; Sun, Lirong; Jones, John G.; Grant, John T.

    2015-07-01

    Mixed-valent rhenium oxide thin films were deposited using reactive magnetron sputtering employing a metallic rhenium target within an oxygen-argon environment. The oxygen and argon flow rates were systematically varied, while the extinction coefficient, k, of the deposited layers was monitored using in situ spectroscopic ellipsometry. In situ monitoring was used to identify absorption features specific to ReO3, namely, the minimization of k brought on by the gap between interband absorption features in the UV at 310 nm and the onset of free electron absorption at wavelengths above 540 nm. Based on these results, oxygen flow ratios of 50% and 60% were shown to produce films having optical properties characteristic of ReO3, and thus, were selected for detailed ex situ characterization. Chemical analysis via X-ray photoelectron spectroscopy confirmed that all films consisted largely of ReO3, but had some contributions from Re2O3, ReO2 and Re2O7. Additional monitoring of the chemistry, as a function of environmental exposure time, indicated a correlation between structural instability and the presence of Re2O3 and Re2O7 in the films.

  15. A Spectroscopic Ellipsometry Study of TiO2 Thin Films Prepared by dc Reactive Magnetron Sputtering: Annealing Temperature Effect

    Institute of Scientific and Technical Information of China (English)

    Mati Horprathum; Pongpan Chindaudom; Pichet Limsuwan

    2007-01-01

    TiO2 thin Rims are obtained by dc reactive magnetron sputtering. A target of titanium (99.995%) and a mixture of argon and oxygen gases are used to deposit TiO2 films on to silicon wafers (100). The crystalline structure of deposited and annealed film are deduced by variable-angle spectroscopic ellipsometry (VASE) and supported by x-ray diffractometry. The optical properties of the Sims are examined by VASE. Measurements of ellipsometry are performed in the spectral range 0.72-3.55 eV at incident angle 75°. Several SE models, categorized by physical and optical models, are proposed based on the 'simpler better' rule and curve-fits, which are generated and compared to the experimental data using the regression analysis. It has been found that the triple-layer physical model together with the Cody-Lorentz dispersion model offer the most convincing result. The as-deposited films are found to be inhomogeneous and amorphous, whereas the annealed films present the phase transition to anatase and rutile structures. The refractive index of TiO2 thin films increases with annealing temperature. A more detailed analysis further reveals that thickness of the top sub-layer increases, whereas the region of the bottom amorphous sub-layer shrinks when the films are annealed at 300°C.

  16. Effect of duty cycle on the electrical and optical properties of VOx film deposited by pulsed reactive magnetron sputtering

    Science.gov (United States)

    Dong, Xiang; Wu, Zhiming; Xu, Xiangdong; Wei, Xiongbang; Jiang, Yadong

    2013-12-01

    Vanadium oxide (VOx) films were deposited onto well cleaned glass substrates by bipolar pulsed reactive magnetron sputtering at room temperature. Dependence of the structure, composition, optical and electrical properties of the films on the pulsed power's duty cycle has been investigated. The results from the X-ray diffraction (XRD) analysis show that there was no remarkable change in the amorphous structure in the films with duty cycle can be observed. But chemical analysis of the surface evaluated with x-ray photoelectron spectroscopy (XPS) indicates that decrease the duty cycle favors to enhance the oxidation of the vanadium. The optical and electrical properties of the films were characterized by spectroscopic ellipsometry and temperature dependent resistivity measurements, respectively. The evolution of the transmittance, optical band gap, optical constants, resistivity and temperature coefficient of resistance (TCR) of the deposited films with duty cycle was analyzed and discussed. In comparison with conventional DC sputtering, under the same discharge atmosphere and power level, these parameters of the VOx films can be modified over a broad range by duty cycle. Therefore adjusting the duty cycle during deposition, which is an effective way to control and optimize the performances of the VOx film for various optoelectronic devices applications.

  17. Determination of the electrically active Al fraction in Al doped ZnO grown by pulsed reactive magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Cornelius, Steffen; Vinnichenko, Mykola; Munnik, Frans; Heller, Rene; Kolitsch, Andreas; Moeller, Wolfhard [Helmholtz Zentrum Dresden-Rossendorf, Dresden (Germany)

    2011-07-01

    Al-doped ZnO (AZO) films which combine maximum carrier mobility, moderate free electron densities and high surface roughness are of special interest for application as transparent front electrode in thin film solar cells. They posses high transmission in the near infrared spectral range, close to the bandgap energy of absorber materials like Si (Eg=1.11 eV), and enable a superior light trapping behaviour. A key to tailor AZO film properties is understanding the mechanisms and effects of the Al-dopant incorporation into the ZnO matrix. It is well accepted that the mobilities in degenerately doped AZO are limited by ionized impurity scattering. A way to overcome this limitation would be to reduce the density of ionized impurities which either do not donate electrons themselves or compensate the Al donor. This is equivalent to increasing the fraction of electrically active Al in the ZnO host material. Systematic and quantitative information on this topic is still missing in literature. Therefore this work focuses on quantification of the Al concentration by ion beam analysis methods in conjuction with Hall-effect measurements for AZO films grown by reactive pulsed magnetron sputtering. The influence of parameters like target composition and substrate temperature on the Al activation is discussed.

  18. Microstructures and optical properties of Cu-doped ZnO films prepared by radio frequency reactive magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Ma Ligang [College of physics and Electronics Engineering, Key Laboratory of Atomic and Molecular Physics and Functional Materials of Gansu Province, Northwest Normal University, Lanzhou, Gansu, 730070 (China); Ma Shuyi, E-mail: maligang186@163.com [College of physics and Electronics Engineering, Key Laboratory of Atomic and Molecular Physics and Functional Materials of Gansu Province, Northwest Normal University, Lanzhou, Gansu, 730070 (China); Chen Haixia; Ai Xiaoqian; Huang Xinli [College of physics and Electronics Engineering, Key Laboratory of Atomic and Molecular Physics and Functional Materials of Gansu Province, Northwest Normal University, Lanzhou, Gansu, 730070 (China)

    2011-09-15

    Pure and Cu-doped ZnO (ZnO:Cu) thin films were deposited on glass substrates using radio frequency (RF) reactive magnetron sputtering. The effect of substrate temperature on the crystallization behavior and optical properties of the ZnO:Cu films have been studied. The crystal structures, surface morphology and optical properties of the films were systematically investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM) and a fluorescence spectrophotometer, respectively. The results indicated that ZnO films showed a stronger preferred orientation toward the c-axis and a more uniform grain size after Cu-doping. As for ZnO:Cu films, the full width at half maxima (FWHM) of (0 0 2) diffraction peaks decreased first and then increased, reaching a minimum of about 0.42 deg. at 350 deg. C and the compressive stress of ZnO:Cu decreased gradually with the increase of substrate temperature. The photoluminescence (PL) spectra measured at room temperature revealed two blue and two green emissions. Intense blue-green luminescence was obtained from the sample deposited at higher substrate temperature. Finally, we discussed the influence of annealing temperature on the structural and optical properties of ZnO:Cu films. The quality of ZnO:Cu film was markedly improved and the intensity of blue peak ({approx}485 nm) and green peak ({approx}527 nm) increased noticeably after annealing. The origin of these emissions was discussed.

  19. AlN thin films deposited by DC reactive magnetron sputtering: effect of oxygen on film growth

    Science.gov (United States)

    García Molleja, Javier; José Gómez, Bernardo; Ferrón, Julio; Gautron, Eric; Bürgi, Juan; Abdallah, Bassam; Abdou Djouadi, Mohamed; Feugeas, Jorge; Jouan, Pierre-Yves

    2013-11-01

    Aluminum nitride is a ceramic compound with many technological applications in many fields, for example optics, electronics and resonators. Contaminants play a crucial role in the AlN performance. This paper focuses mainly in the effect of oxygen when AlN, with O impurities in its structure, is grown on oxidized layers. In this study, AlN thin films have been deposited at room temperature and low residual vacuum on SiO2/Si (1 0 0) substrates. AlN films were grown by DC reactive magnetron sputtering (aluminum target) and atmosphere composed by an argon/nitrogen mixture. Working pressure was 3 mTorr. Film characterization was performed by AES, XRD, SEM, EDS, FTIR, HRTEM, SAED and band-bending method. Our results show that oxidized interlayer imposes compressive stresses to AlN layer, developing a polycrystalline deposition. Indeed, when film thickness is over 900 nm, influence of oxidized interlayer diminishes and crystallographic orientation changes to the (0 0 0 2) one, i.e., columnar structure, and stress relief is induced (there is a transition from compressive to tensile stress). Also, we propose a growth scenario to explain this behaviour.

  20. Properties of Reactive Magnetron Sputtered ITO Films without in-situ Substrate Heating and Post-deposition Annealing

    Institute of Scientific and Technical Information of China (English)

    2000-01-01

    Indium tin oxide (ITO) films were prepared on polyester, Si and glass substrate with relatively high deposition rate of above 0.9 nm/s by DC reactive magnetron sputtering technique at the sputtering pressure of 0.06 Pa system, respectively. The dependence of resistivity on deposition parameters, such as deposition rate, target-to-substrate distance (TSD), oxygen flow rate and sputtering time (thickness), has been investigated, together with the structural and the optical properties. It was revealed that all lTO films exhibited lattice expansion. The resistivity of ITO thin films shows significant substrate effect: much lower resistivity and broader process window have been reproducibly achieved for the deposition of lTO films onto polyester rather than those prepared on both Si and glass substrates. The films with resistivity of as low as 4.23x 10-4 Ω.cm and average transmittance of ~78% at wavelength of 400~700 nm have been achieved for thefilms on polyester at room temperature.

  1. Role of nitrogen in the formation of hard and elastic CNx thin films by reactive magnetron sputtering

    Science.gov (United States)

    Hellgren, Niklas; Johansson, Mats P.; Broitman, Esteban; Hultman, Lars; Sundgren, Jan-Eric

    1999-02-01

    Carbon nitride films, deposited by reactive dc magnetron sputtering in Ar/N2 discharges, were studied with respect to composition, structure, and mechanical properties. CNx films, with 0<=x<=0.35, were grown onto Si (001) substrates at temperatures between 100 and 550 °C. The total pressure was kept constant at 3.0 mTorr with the N2 fraction varied from 0 to 1. As-deposited films were studied by Rutherford-backscattering spectroscopy, x-ray photoelectron spectroscopy, electron-energy loss spectroscopy, Raman and Fourier transform infrared spectroscopy, and nanoindentation. Three characteristic film structures could be identified: For temperatures below ~150 °C, an amorphous phase forms, the properties of which are essentially unaffected by the nitrogen concentration. For temperatures above ~200 °C, a transition from a graphitelike phase to a ``fullerenelike'' phase is observed when the nitrogen concentration increases from ~5 to ~15 at. %. This fullerenelike phase exhibits high hardness values and extreme elasticity, as measured by nanoindentation. A ``defected-graphite'' model, where nitrogen atoms goes into substitutional graphite sites, is suggested for explaining this structural transformation. When a sufficient number of nitrogen atoms is incorporated, formation of pentagons is promoted, leading to curving of the basal planes. This facilitates cross-linking between the planes and a distortion of the graphitic structure, and a strong three-dimensional covalently bonded network is formed.

  2. Electrical and optical properties of CNx(0<=x<=0.25) films deposited by reactive magnetron sputtering

    Science.gov (United States)

    Broitman, E.; Hellgren, N.; Järrendahl, K.; Johansson, M. P.; Olafsson, S.; Radnóczi, G.; Sundgren, J.-E.; Hultman, L.

    2001-01-01

    The electrical and optical properties of carbon-nitride CNx films (0⩽x⩽0.25) deposited by unbalanced reactive magnetron sputtering from a graphite target in mixed Ar/N2 discharges at a substrate temperature of 350 °C have been investigated. Pure C films exhibit a dark conductivity at room temperature of 25 Ω-1 cm-1, which grows up to 250 Ω-1 cm-1 for CNx films with N content of 20%. For CNx films, temperature-dependent conductivity measurements suggest that two electron conduction processes exist in the investigated temperature range 130

  3. Ion beam analysis, corrosion resistance and nanomechanical properties of TiAlCN/CNx multilayer grown by reactive magnetron sputtering

    Science.gov (United States)

    Alemón, B.; Flores, M.; Canto, C.; Andrade, E.; de Lucio, O. G.; Rocha, M. F.; Broitman, E.

    2014-07-01

    A novel TiAlCN/CNx multilayer coating, consisting of nine TiAlCN/CNx periods with a top layer 0.5 μm of CNx, was designed to enhance the corrosion resistance of CoCrMo biomedical alloy. The multilayers were deposited by dc and RF reactive magnetron sputtering from Ti0.5Al0.5 and C targets respectively in a N2/Ar plasma. The corrosion resistance and mechanical properties of the multilayer coatings were analyzed and compared to CoCrMo bulk alloy. Ion beam analysis (IBA) and X-ray diffraction tests were used to measure the element composition profiles and crystalline structure of the films. Corrosion resistance was evaluated by means of potentiodynamic polarization measurements using simulated body fluid (SBF) at typical body temperature and the nanomechanical properties of the multilayer evaluated by nanoindentation tests were analyzed and compared to CoCrMo bulk alloy. It was found that the multilayer hardness and the elastic recovery are higher than the substrate of CoCrMo. Furthermore the coated substrate shows a better general corrosion resistance than that of the CoCrMo alloy alone with no observation of pitting corrosion.

  4. Magnetron theory

    Science.gov (United States)

    Riyopoulos, Spilios

    1996-03-01

    A guiding center fluid theory is applied to model steady-state, single mode, high-power magnetron operation. A hub of uniform, prescribed density, feeds the current spokes. The spoke charge follows from the continuity equation and the incompressibility of the guiding center flow. Included are the spoke self-fields (DC and AC), obtained by an expansion around the unperturbed (zero-spoke charge) flow in powers of ν/V1, ν, and V1 being the effective charge density and AC amplitude. The spoke current is obtained as a nonlinear function of the detuning from the synchronous (Buneman-Hartree, BH) voltage Vs; the spoke charge is included in the self-consistent definition of Vs. It is shown that there is a DC voltage region of width ‖V-Vs‖˜V1, where the spoke width is constant and the spoke current is simply proportional to the AC voltage. The magnetron characteristic curves are ``flat'' in that range, and are approximated by a linear expansion around Vs. The derived formulas differ from earlier results [J. F. Hull, in Cross Field Microwave Devices, edited by E. Okress (Academic, New York, 1961), pp. 496-527] in (a) there is no current cutoff at synchronism; the tube operates well below as well above the BH voltage; (b) the characteristics are single valued within the synchronous voltage range; (c) the hub top is not treated as virtual cathode; and (d) the hub density is not equal to the Brillouin density; comparisons with tube measurements show the best agreement for hub density near half the Brillouin density. It is also shown that at low space charge and low power the gain curve is symmetric relative to the voltage (frequency) detuning. While symmetry is broken at high-power/high space charge magnetron operation, the BH voltage remains between the current cutoff voltages.

  5. SiNx Coatings Deposited by Reactive High Power Impulse Magnetron Sputtering: Process Parameters Influencing the Nitrogen Content.

    Science.gov (United States)

    Schmidt, Susann; Hänninen, Tuomas; Goyenola, Cecilia; Wissting, Jonas; Jensen, Jens; Hultman, Lars; Goebbels, Nico; Tobler, Markus; Högberg, Hans

    2016-08-10

    Reactive high power impulse magnetron sputtering (rHiPIMS) was used to deposit silicon nitride (SiNx) coatings for biomedical applications. The SiNx growth and plasma characterization were conducted in an industrial coater, using Si targets and N2 as reactive gas. The effects of different N2-to-Ar flow ratios between 0 and 0.3, pulse frequencies, target power settings, and substrate temperatures on the discharge and the N content of SiNx coatings were investigated. Plasma ion mass spectrometry shows high amounts of ionized isotopes during the initial part of the pulse for discharges with low N2-to-Ar flow ratios of <0.16, while signals from ionized molecules rise with the N2-to-Ar flow ratio at the pulse end and during pulse-off times. Langmuir probe measurements show electron temperatures of 2-3 eV for nonreactive discharges and 5.0-6.6 eV for discharges in transition mode. The SiNx coatings were characterized with respect to their composition, chemical bond structure, density, and mechanical properties by X-ray photoelectron spectroscopy, X-ray reflectivity, X-ray diffraction, and nanoindentation, respectively. The SiNx deposition processes and coating properties are mainly influenced by the N2-to-Ar flow ratio and thus by the N content in the SiNx films and to a lower extent by the HiPIMS frequencies and power settings as well as substrate temperatures. Increasing N2-to-Ar flow ratios lead to decreasing growth rates, while the N content, coating densities, residual stresses, and the hardness increase. These experimental findings were corroborated by density functional theory calculations of precursor species present during rHiPIMS.

  6. Energy transferred to the substrate surface during reactive magnetron sputtering of aluminum in Ar/O{sub 2} atmosphere

    Energy Technology Data Exchange (ETDEWEB)

    Thomann, A.L., E-mail: anne-lise.thomann@univ-orleans.fr [GREMI, UMR 7344 du CNRS et de l' Université d' Orléans, 14 rue d' Issoudun, B.P. 6744, 45067 Orléans Cedex 2 (France); Cormier, P.A. [GREMI, UMR 7344 du CNRS et de l' Université d' Orléans, 14 rue d' Issoudun, B.P. 6744, 45067 Orléans Cedex 2 (France); Dolique, V. [LMA, Université Claude Bernard Lyon I, Campus de la DOUA, Bâtiment Virgo 7 Avenue Pierre de Coubertin, 69622 Villeurbanne Cedex (France); Semmar, N.; Dussart, R.; Lecas, T. [GREMI, UMR 7344 du CNRS et de l' Université d' Orléans, 14 rue d' Issoudun, B.P. 6744, 45067 Orléans Cedex 2 (France); Courtois, B. [CEMHTI, UPR3079 du CNRS, 1D Avenue de la Recherche Scientifique, 45071 Orléans Cedex 2 (France); Brault, P. [GREMI, UMR 7344 du CNRS et de l' Université d' Orléans, 14 rue d' Issoudun, B.P. 6744, 45067 Orléans Cedex 2 (France)

    2013-07-31

    A study of the reactive sputtering of aluminum was carried out by coupling energy flux measurements at the substrate location with conventional diagnostics of the gas phase and analyses of the deposited films. The main purpose was to get some insight into the elementary mechanisms involved at the substrate surface during the film growth in the well known metal and oxide regimes and at the transitions from one to another. Measurements were carried out in front of a 10 cm Al target at a power of 400 W (i.e. 5 W/cm{sup 2}) and a total pressure of 0.6 Pa. The flow rate ratio (O{sub 2}/O{sub 2} + Ar) was varied in the range 0 to 50%. Different kinetics and values of energy transfer, denoting different involved mechanisms, were evidenced at metal-oxide (increasing flow rate) and oxide-metal (decreasing flow rate) transitions. The metal-oxide transition was found to be a progressive process, in agreement with optical emission spectroscopy and deposit analysis, characterized by an increase of the energy flux that could be due to the oxidation of the growing metal film. On the contrary, oxide-metal transition is abrupt, and a high energy is released at the beginning that could not be attributed to a chemical reaction. The possible effect of O{sup −} ions at this step was discussed. - Highlights: • We use real-time energy flux measurements to study reactive magnetron sputtering. • At transitions rise of the energy flux transferred to the substrate is observed. • At the metal-oxide transition energy is released by oxidation of the Al growing film. • At the oxide-metal transition the energy transfer may be due to O{sup −} born at the target. • Energy flux study gives some insight into mechanisms involved in the film growth.

  7. In vitro biocompatibility of Ti–Mg alloys fabricated by direct current magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Hieda, Junko, E-mail: hieda@imr.tohoku.ac.jp; Niinomi, Mitsuo; Nakai, Masaaki; Cho, Ken

    2015-09-01

    Ti–xMg (x = 17, 33, and 55 mass%) alloy films, which cannot be prepared by conventional melting processes owing to the absence of a solid-solution phase in the phase diagram, were prepared by direct current magnetron sputtering in order to investigate their biocompatibility. Ti and Mg films were also prepared by the same process for comparison. The crystal structures were examined by X-ray diffraction (XRD) analysis and the surfaces were analyzed by X-ray photoelectron spectroscopy. The Ti, Ti–xMg alloy, and Mg films were immersed in a 0.9% NaCl solution at 310 K for 7 d to evaluate the dissolution amounts of Ti and Mg. In addition, to evaluate the formation ability of calcium phosphate in vitro, the Ti, Ti–xMg alloy, and Mg films were immersed in Hanks' solution at 310 K for 30 d. Ti and Mg form solid-solution alloys because the peaks attributed to pure Ti and Mg do not appear in the XRD patterns of any of the Ti–xMg alloy films. The surfaces of the Ti–17Mg alloy and Ti–33Mg alloy films contain Ti oxides and MgO, whereas MgO is the main component of the surface oxide of the Ti–55Mg alloy and Mg films. The dissolution amounts of Ti from all films are below or near the detection limit of inductively coupled plasma-optical emission spectroscopy. On the other hand, the Ti–17Mg alloy, Ti–33Mg alloy, Ti–55Mg alloy, and Mg films exhibit Mg dissolution amounts of approximately 2.5, 1.4, 21, and 41 μg/cm{sup 2}, respectively. The diffraction peaks attributed to calcium phosphate are present in the XRD patterns of the Ti–33Mg alloy, Ti–55Mg alloy, and Mg films after the immersion in Hanks' solution. Spherical calcium phosphate particles precipitate on the surface of the Ti–33Mg film. However, many cracks are observed in the Ti–55Mg film, and delamination of the film occurs after the immersion in Hanks' solution. The Mg film is dissolved in Hanks' solution and calcium phosphate particles precipitate on the glass substrate

  8. Synthesis and properties of CSsub>xsub>Fsub>ysub> thin films deposited by reactive magnetron sputtering in an Ar/SFsub>6sub> discharge.

    Science.gov (United States)

    Lai, Chung-Chuan; Goyenola, Cecilia; Broitman, Esteban; Näslund, Lars-Åke; Hogberg, Hans; Hultman, Lars; Gueorguiev, Gueorgui; Rosen, Johanna

    2017-03-20

    A theoretical and experimental study on the growth and properties of a ternary carbon-based material, CSsub>xsub>Fsub>ysub>, synthesized from SFsub>6sub> and C as primary precursors is reported. The synthetic growth concept was applied to model the possible species resulting from the fragmentation of SFsub>6sub> molecules and the recombination of S-F fragments with atomic C. The possible species were further evaluated for their contribution to the film growth. Corresponding solid CSsub>xsub>Fsub>ysub> thin films were deposited by reactive direct current magnetron sputtering from a C target in mixed Ar/SFsub>6sub> discharge with different SFsub>6sub> partial pressures (Psub>SF6sub>). Properties of the films were determined by X-ray photoelectron spectroscopy, X-ray reflectivity, and nanoindentation. A reduced mass density in the CSsub>xsub>Fsub>ysub> films is predicted due to incorporation of precursor species with a more pronounced steric effect, which also agrees with the low density values observed for the films. Increased Psub>SF6sub> leads to decreasing deposition rate and increasing density, as explained by enhanced fluorination and etching on the deposited surface by a larger concentration of F/Fsub>2sub> species during the growth, as supported by an increment of the F relative content in the films. Mechanical properties indicating superelasticity were obtained from the film with lowest F content, implying a fullerene-like structure in CSsub>xsub>Fsub>ysub> compounds.

  9. Magnetron reactively sputtered Ti-DLC coatings on HNBR rubber: The influence of substrate bias

    OpenAIRE

    Bui, X. L.; Pei, Y.T.; De Hosson, J. Th. M.

    2008-01-01

    In this study, Ti-containing diamond-like carbon (Ti-DLC) coatings have been deposited on HNBR (hydrogenated nitrile butadiene) rubber and also on Si wafer as reference via unbalanced magnetroli reactive sputtering from a Ti target in C2H2/Ar plasma. The deposition rates of coatings on rubber and Si wafer were about the same. Columnar structures resulting from a rough interface were often observed in the coatings deposited on rubbers. Only at a high bias voltage of -300 V the coating on HNBR ...

  10. SiNx coatings deposited by reactive high power impulse magnetron sputtering: Process parameters influencing the residual coating stress

    Science.gov (United States)

    Schmidt, S.; Hänninen, T.; Wissting, J.; Hultman, L.; Goebbels, N.; Santana, A.; Tobler, M.; Högberg, H.

    2017-05-01

    The residual coating stress and its control is of key importance for the performance and reliability of silicon nitride (SiNx) coatings for biomedical applications. This study explores the most important deposition process parameters to tailor the residual coating stress and hence improve the adhesion of SiNx coatings deposited by reactive high power impulse magnetron sputtering (rHiPIMS). Reactive sputter deposition and plasma characterization were conducted in an industrial deposition chamber equipped with pure Si targets in N2/Ar ambient. Reactive HiPIMS processes using N2-to-Ar flow ratios of 0 and 0.28-0.3 were studied with time averaged positive ion mass spectrometry. The coatings were deposited to thicknesses of 2 μm on Si(001) and to 5 μm on polished CoCrMo disks. The residual stress of the X-ray amorphous coatings was determined from the curvature of the Si substrates as obtained by X-ray diffraction. The coatings were further characterized by X-ray photoelectron spectroscopy, scanning electron microscopy, and nanoindentation in order to study their elemental composition, morphology, and hardness, respectively. The adhesion of the 5 μm thick coatings deposited on CoCrMo disks was assessed using the Rockwell C test. The deposition of SiNx coatings by rHiPIMS using N2-to-Ar flow ratios of 0.28 yield dense and hard SiNx coatings with Si/N ratios <1. The compressive residual stress of up to 2.1 GPa can be reduced to 0.2 GPa using a comparatively high deposition pressure of 600 mPa, substrate temperatures below 200 °C, low pulse energies of <2.5 Ws, and moderate negative bias voltages of up to 100 V. These process parameters resulted in excellent coating adhesion (ISO 0, HF1) and a low surface roughness of 14 nm for coatings deposited on CoCrMo.

  11. Deposition and characterization of TaAIN thin films by reactive magnetron sputtering; Deposicao e caracterizacao de filmes finos de TaAIN depositados por magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Oliveira, G.B.; Fernandez, D.R.; Fontes Junior, A.S.; Felix, L.C.; Tentardini, E.K. [Universidade Federal de Sergipe (UFS), Sao Cristovao, SE (Brazil). Departamento de Ciencia e Engenharia de Materiais; Hubler, R. [Pontificia Universidade Catolica do Rio Grande do Sul (PUC-RS), RS (Brazil); Silva Junior, A.H. da, E-mail: brito-g@hotmail.com [Universidade Federal do Rio Grande do Sul (UFRGS), RS (Brazil)

    2016-07-01

    Phase stability, oxidation resistance and great mechanical properties are the main objectives when synthesizing protective coatings. The tantalum nitride (TaN) has aroused interest because of its high temperature stability, chemical inertness and thermal conductivity. However, it has a low hardness value when compared to other coatings. Researches has shown that one way to improvements in the properties of a thin film is by adding other elements in the deposition process. Therefore, the objective of this study was to deposit thin films of TaAlN by magnetron sputtering, changing the aluminum concentration of 2, 5, 7, to 14%. Then the coatings were characterized by EDS, RBS, GIXRD and nanohardness. In this study was found that the aluminum deposited did not change the oxidation resistance of the coating, and the highest value of hardness was 28 GPa for the sample with 14 at.%. (author)

  12. In vitro biocompatibility of Ti-Mg alloys fabricated by direct current magnetron sputtering.

    Science.gov (United States)

    Hieda, Junko; Niinomi, Mitsuo; Nakai, Masaaki; Cho, Ken

    2015-09-01

    Ti-xMg (x=17, 33, and 55 mass%) alloy films, which cannot be prepared by conventional melting processes owing to the absence of a solid-solution phase in the phase diagram, were prepared by direct current magnetron sputtering in order to investigate their biocompatibility. Ti and Mg films were also prepared by the same process for comparison. The crystal structures were examined by X-ray diffraction (XRD) analysis and the surfaces were analyzed by X-ray photoelectron spectroscopy. The Ti, Ti-xMg alloy, and Mg films were immersed in a 0.9% NaCl solution at 310 K for 7d to evaluate the dissolution amounts of Ti and Mg. In addition, to evaluate the formation ability of calcium phosphate in vitro, the Ti, Ti-xMg alloy, and Mg films were immersed in Hanks' solution at 310 K for 30 d. Ti and Mg form solid-solution alloys because the peaks attributed to pure Ti and Mg do not appear in the XRD patterns of any of the Ti-xMg alloy films. The surfaces of the Ti-17 Mg alloy and Ti-33 Mg alloy films contain Ti oxides and MgO, whereas MgO is the main component of the surface oxide of the Ti-55 Mg alloy and Mg films. The dissolution amounts of Ti from all films are below or near the detection limit of inductively coupled plasma-optical emission spectroscopy. On the other hand, the Ti-17 Mg alloy, Ti-33 Mg alloy, Ti-55 Mg alloy, and Mg films exhibit Mg dissolution amounts of approximately 2.5, 1.4, 21, and 41 μg/cm(2), respectively. The diffraction peaks attributed to calcium phosphate are present in the XRD patterns of the Ti-33 Mg alloy, Ti-55 Mg alloy, and Mg films after the immersion in Hanks' solution. Spherical calcium phosphate particles precipitate on the surface of the Ti-33 Mg film. However, many cracks are observed in the Ti-55 Mg film, and delamination of the film occurs after the immersion in Hanks' solution. The Mg film is dissolved in Hanks' solution and calcium phosphate particles precipitate on the glass substrate. Consequently, it is revealed that the Ti-33 Mg

  13. Temperature-dependent microstructural evolution of Ti{sub 2}AlN thin films deposited by reactive magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Zheng [Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), #08-03, 2 Fusionopolis Way, Innovis, 138634 (Singapore); Jin, Hongmei, E-mail: jinhm@ihpc.a-star.edu.sg [Institute of High Performance Computing, A*STAR (Agency for Science, Technology and Research), 1 Fusionopolis Way, Connexis 138632 (Singapore); Chai, Jianwei; Pan, Jisheng; Seng, Hwee Leng; Goh, Glen Tai Wei; Wong, Lai Mun [Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), #08-03, 2 Fusionopolis Way, Innovis, 138634 (Singapore); Sullivan, Michael B. [Institute of High Performance Computing, A*STAR (Agency for Science, Technology and Research), 1 Fusionopolis Way, Connexis 138632 (Singapore); Wang, Shi Jie, E-mail: sj-wang@imre.a-star.edu.sg [Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), #08-03, 2 Fusionopolis Way, Innovis, 138634 (Singapore)

    2016-04-15

    Graphical abstract: - Highlights: • We investigate microstructural evolution of Ti{sub 2}AlN MAX thin films with temperature. • The film forms a mixture of Ti, Al and (Ti,Al)N cubic solid solution at 500 °C. • The film nucleates into polycrystalline Ti{sub 2}AlN M{sub n+1}AX{sub n} phases at 600 °C. • The film transforms into a single-crystalline Ti{sub 2}AlN (0 0 0 2) thin film at 750 °C. • The mechanisms behind Ti{sub 2}AlN phase transformation with temperature are discussed. - Abstract: Ti{sub 2}AlN MAX-phase thin films have been deposited on MgO (1 1 1) substrates between 500 and 750 °C using DC reactive magnetron sputtering of a Ti{sub 2}Al compound target in a mixed N{sub 2}/Ar plasma. The composition, crystallinity, morphology and hardness of the thin films have been characterized by X-ray photoelectron spectroscopy, X-ray diffraction, atomic force microscopy and nano-indentation, respectively. The film initially forms a mixture of Ti, Al and (Ti,Al)N cubic solid solution at 500 °C and nucleates into polycrystalline Ti{sub 2}AlN MAX phases at 600 °C. Its crystallinity is further improved with an increase in the substrate temperature. At 750 °C, a single-crystalline Ti{sub 2}AlN (0 0 0 2) thin film is formed having characteristic layered hexagonal surface morphology, high hardness, high Young's modulus and low electrical resistivity. The mechanism behind the evolution of the microstructure with growth temperature is discussed in terms of surface energies, lattice mismatch and enhanced adatom diffusion at high growth temperatures.

  14. Reactive magnetron sputter deposition of superconducting niobium titanium nitride thin films with different target sizes

    CERN Document Server

    Bos, B G C; Haalebos, E A F; Gimbel, P M L; Klapwijk, T M; Baselmans, J J A; Endo, A

    2016-01-01

    The superconducting critical temperature (Tc>15 K) of niobium titanium nitride (NbTiN) thin films allows for low-loss circuits up to 1.1 THz, enabling on-chip spectroscopy and multi-pixel imaging with advanced detectors. The drive for large scale detector microchips is demanding NbTiN films with uniform properties over an increasingly larger area. This article provides an experimental comparison between two reactive d.c. sputter systems with different target sizes: a small target (100 mm diameter) system and a large target (127 mm x 444.5 mm) one, with the aim of improving the film uniformity using the large target system. We focus on the Tc of the films and I-V characteristics of the sputter plasma, and we find that both systems are capable of depositing films with Tc>15 K. We find that these films are deposited within the transition from metallic to compound sputtering, at the point where target nitridation most strongly depends on nitrogen flow. Key in the deposition optimization is to increase the system'...

  15. Modelling of the reactive sputtering process with non-uniform discharge current density and different temperature conditions

    Science.gov (United States)

    Vašina, P; Hytková, T; Eliáš, M

    2009-05-01

    The majority of current models of the reactive magnetron sputtering assume a uniform shape of the discharge current density and the same temperature near the target and the substrate. However, in the real experimental set-up, the presence of the magnetic field causes high density plasma to form in front of the cathode in the shape of a toroid. Consequently, the discharge current density is laterally non-uniform. In addition to this, the heating of the background gas by sputtered particles, which is usually referred to as the gas rarefaction, plays an important role. This paper presents an extended model of the reactive magnetron sputtering that assumes the non-uniform discharge current density and which accommodates the gas rarefaction effect. It is devoted mainly to the study of the behaviour of the reactive sputtering rather that to the prediction of the coating properties. Outputs of this model are compared with those that assume uniform discharge current density and uniform temperature profile in the deposition chamber. Particular attention is paid to the modelling of the radial variation of the target composition near transitions from the metallic to the compound mode and vice versa. A study of the target utilization in the metallic and compound mode is performed for two different discharge current density profiles corresponding to typical two pole and multipole magnetics available on the market now. Different shapes of the discharge current density were tested. Finally, hysteresis curves are plotted for various temperature conditions in the reactor.

  16. Blocking layer effect on dye-sensitized solar cells assembled with TiO2 nanorods prepared by dc reactive magnetron sputtering

    OpenAIRE

    Meng Lijian; Li Can

    2011-01-01

    Three different thickness dense TiO2 (150 nm, 300 nm and 450 nm respectively) films were deposited on ITO substrates by dc reactive magnetron sputtering technique. These dense TiO2 films were used as the blocking layers. After that, TiO2 nanorod films were deposited on these dense TiO2 films by same technique. Both the dense and nanorod TiO2 films have an anatase phase. The dense TiO2 films have an orientation along the [101] direction and the TiO2 nanorod films show a very strong orientation...

  17. Deposition and characterization of zirconium nitride (ZrN) thin films by reactive magnetron sputtering with linear gas ion source and bias voltage

    Energy Technology Data Exchange (ETDEWEB)

    Kavitha, A.; Kannan, R. [Department of Physics, University College of Engineering, Anna University, Dindugal-624622 (India); Subramanian, N. Sankara [Department of Physics, Thiagarajar College of Engineering, Madurai -625015, Tamilnadu (India); Loganathan, S. [Ion Plating, Titan Industries Ltd., Hosur - 635126, Tamilnadu (India)

    2014-04-24

    Zirconium nitride thin films have been prepared on stainless steel substrate (304L grade) by reactive cylindrical magnetron sputtering method with Gas Ion Source (GIS) and bias voltage using optimized coating parameters. The structure and surface morphologies of the ZrN films were characterized using X-ray diffraction, atomic microscopy and scanning electron microscopy. The adhesion property of ZrN thin film has been increased due to the GIS. The coating exhibits better adhesion strength up to 10 N whereas the ZrN thin film with bias voltage exhibits adhesion up to 500 mN.

  18. Highly oriented δ-Bi2O3 thin films stable at room temperature synthesized by reactive magnetron sputtering

    DEFF Research Database (Denmark)

    Lunca Popa, P.; Sønderby, S.; Kerdsongpanya, S.;

    2013-01-01

    We report the synthesis by reactive magnetron sputtering and structural characterization of highly (111)-oriented thin films of δ–Bi2O3. This phase is obtained at a substrate temperature of 150–200 °C in a narrow window of O2/Ar ratio in the sputtering gas (18%–20%). Transmission electron microsc...... microscopy and x-ray diffraction reveal a polycrystalline columnar structure with (111) texture. The films are stable from room temperature up to 250 °C in vacuum and 350 °C in ambient air. © 2013 American Institute of Physics...

  19. The effect of increasing V content on the structure, mechanical properties and oxidation resistance of Ti–Si–V–N films deposited by DC reactive magnetron sputtering

    OpenAIRE

    Fernandes, Filipe; Loureiro, A.; Polcar, Tomas; Cavaleiro, Albano

    2014-01-01

    FERNANDES, F. [et al.] - The effect of increasing V content on the structure, mechanical properties and oxidation resistance of Ti–Si–V–N films deposited by DC reactive magnetron sputtering. "Applied Surface Science". ISSN 0169-4332. Vol. 289 (2014) p. 114-123 In the last years, vanadium rich films have been introduced as possible candidates for self-lubrication at high temperatures, based on the formation of V2O5 oxide. The aim of this investigation was to study the effect of V additions ...

  20. Effect of deposition temperature on microstructure and corrosion resistance of ZrN thin films deposited by DC reactive magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Roman, Daiane; Bernardi, Juliane; Amorim, Cintia L.G. de [Centro de Ciencias Exatas e Tecnologia, Universidade de Caxias do Sul, Caxias do Sul, RS 95070-560 (Brazil); Souza, Fernando S. de; Spinelli, Almir [Departamento de Quimica, Universidade Federal de Santa Catarina, Florianopolis, SC 88040-900 (Brazil); Giacomelli, Cristiano [Departamento de Quimica, Universidade Federal de Santa Maria, Santa Maria, RS 97105-900 (Brazil); Figueroa, Carlos A. [Centro de Ciencias Exatas e Tecnologia, Universidade de Caxias do Sul, Caxias do Sul, RS 95070-560 (Brazil); Baumvol, Israel J.R. [Centro de Ciencias Exatas e Tecnologia, Universidade de Caxias do Sul, Caxias do Sul, RS 95070-560 (Brazil); Instituto de Fisica, Universidade Federal do Rio Grande do Sul, Porto Alegre, RS 91509-970 (Brazil); Basso, Rodrigo L.O., E-mail: rlobasso@ucs.br [Centro de Ciencias Exatas e Tecnologia, Universidade de Caxias do Sul, Caxias do Sul, RS 95070-560 (Brazil)

    2011-10-17

    Highlights: {center_dot} Deposition conditions determine the thickness and microstructure of the ZrN films. {center_dot} For ZrN films relatively thin, the microstructure shows no preferred orientation. {center_dot} For ZrN film relatively thick, preferred orientation is in the (1 1 1) direction. {center_dot} Composition and microstructure controls the corrosion resistance of the ZrN films. {center_dot} The air exposure forms oxide and oxynitride layer promoting the corrosion resistance. - Abstract: Thin films of zirconium nitride were deposited on different substrates by direct current reactive magnetron sputtering, varying the deposition time, Ar/N{sub 2} partial pressure ratio and substrate temperature. The physicochemical, crystalline structure and corrosion resistance of the thin films were studied by glancing angle X-ray diffraction, Rutherford backscattering spectrometry, scanning electron microscopy, X-ray photoelectron spectroscopy and potentiodynamic polarization tests in artificial saliva solution. The results show that the thin films presents high texture in [1 1 1] direction verified by X-ray diffraction measurements which indicated the lack of a Bragg peak for (2 0 0) crystallographic planes for a lower deposition temperatures. The XPS analysis showed the presence of ZrN and also the oxide species (ZrN{sub x}O{sub y} and ZrO{sub 2}) at the surface, with chemical states changing with deposition temperatures. In addition, the thin ZrN films were found to be stable in an electrochemical cell over a large potential range and the pitting potential increases with increasing the deposition temperature. For deposition at 500 deg. C, the pitting potential was found to be E{sub p} = 1.5 V/SCE. The corrosion behavior is attributed to the formation of thin ZrN{sub x}O{sub y} and ZrO{sub 2} layer on the top surface of the films, with increasing of the deposition temperature.

  1. The effect of the oxygen ratio control of DC reactive magnetron sputtering on as-deposited non stoichiometric NiO thin films

    Science.gov (United States)

    Wang, Mengying; Thimont, Yohann; Presmanes, Lionel; Diao, Xungang; Barnabé, Antoine

    2017-10-01

    Non-stoichiometric Ni1-xO thin films were prepared on glass substrate by direct current reactive magnetron sputtering in a large range of oxygen partial pressure (0 ≤ pO2 ≤ 1 Pa). The dependence of the deposited film structure and properties on oxygen stoichiometry were systematically analyzed by X-ray diffraction, X-ray reflectivity, X-ray photoemission spectroscopy, Raman spectroscopy, atomic force microscopy, UV-vis measurements and electrical transport properties measurements. The deposition rates, surface morphology and opto-electrical properties are very sensitive to the oxygen partial pressure lower than 0.05 Pa due to the presence of metallic nickel cluster phase determined by X-ray diffraction, X-ray reflectivity and XPS spectroscopy. Presence of nanocrystallized NiO phase was highlighted even for pO2 = 0 Pa. For pO2 > 0.05 Pa, only the NiO phase was detected. Progressive appearance of Ni3+ species is characterized by a fine increase of the lattice parameter and (111) preferred orientation determined by grazing angle X-ray diffraction, fine increase of the X-ray reflectivity critical angle, displacement of the Ni 2p3/2 signal towards lower energy, significant increase of the electrical conductivity and decrease of the total transmittance. Quantification of Ni3+ by XPS method is discussed. We also showed that the use of Raman spectroscopy was relevant for demonstrating the presence of Ni3+ in the Ni1-xO thin films.

  2. Reactive magnetron sputtering of Ni doped ZnO thin film: Investigation of optical, structural, mechanical and magnetic properties

    Energy Technology Data Exchange (ETDEWEB)

    Siddheswaran, R., E-mail: rajendra@ntc.zcu.cz [New Technologies Research Centre, University of West Bohemia, Plzeň 30614 (Czech Republic); Netrvalová, Marie; Savková, Jarmila; Novák, Petr; Očenášek, Jan; Šutta, Pavol [New Technologies Research Centre, University of West Bohemia, Plzeň 30614 (Czech Republic); Kováč, Jaroslav [Slovak University of Technology, Faculty of Electrical Engineering and Information Technology, Il’kovičova 3, 81219 Bratislava (Slovakia); Jayavel, R. [Centre for Nanoscience and Technology, Anna University, Chennai 600025 (India)

    2015-07-05

    Highlights: • Highly preferred oriented [0 0 1] thin film columnar structure in ZnO:Ni from RF sputtering. • XRD confirmed the preferred orientation of ZnO structure from the only observed (0 0 2) plane. • Variation of refractive indices and optical band gap by doping of Ni in ZnO were studied. • Surface morphology and mechanical properties of the thin films were studied by SEM and AFM. • Critical concentration of Ni for the rise and enhancement of ferromagnetism was studied by VSM. - Abstract: Nickel doped ZnO (ZnO:Ni) thin films are considered to be promising materials for optoelectronic applications. The doping of transition metal ion modifies the optical and physical properties of the materials. Therefore, studies on optical and physical properties are important for such applications. In the present work, the ZnO:Ni thin films with different Ni concentrations were deposited on Si (1 0 0) and corning glass substrates at 400 °C by reactive magnetron sputtering using Ar and O{sub 2} gas mixture. The (0 0 2) growth plane of the ZnO was identified from the X-ray diffraction experiment. It was also confirmed that the films exhibit strong preferred orientation (texture) of crystalline columns in the direction [0 0 1] perpendicular to the substrate surface. The optical transmittance, band gap, and refractive indices of the thin films were studied by UV–Vis spectroscopy, photoluminescence and spectroscopic ellipsometry. The optical band gap and refractive index of the thin films decreased with increase of Ni content. The Raman and FT-IR spectroscopic studies were used to explain the modes of vibrations of the functional groups in the material. The surface topography, grain size, distribution, and fine structure of the thin films were analyzed by using scanning electron microscopy (SEM) and atomic force microscopy (AFM). The hardness of the films was measured using a nanoindenter coupled with AFM. The growth of ferromagnetism by the effect of Ni content was

  3. Microstructure and He desorption behaviors of He charged FeCrNi-based films fabricated by direct current magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Song, L. [Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, P.O. Box 1129, Hefei 230031 (China); Wang, X.P., E-mail: xpwang@issp.ac.cn [Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, P.O. Box 1129, Hefei 230031 (China); Liu, F. [Institute of Plasma Physics, Chinese Academy of Sciences, P.O. Box 1126, Hefei 230031 (China); Gao, Y.X. [Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, P.O. Box 1129, Hefei 230031 (China); Zhang, T., E-mail: zhangtao@issp.ac.cn [Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, P.O. Box 1129, Hefei 230031 (China); Luo, G.N. [Institute of Plasma Physics, Chinese Academy of Sciences, P.O. Box 1126, Hefei 230031 (China); Fang, Q.F.; Liu, C.S. [Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, P.O. Box 1129, Hefei 230031 (China)

    2015-08-31

    He-charged FeCrNi-based films were prepared at different temperatures in a mixed atmosphere of He and Ar by direct-current magnetron sputtering method. X-ray diffraction and energy dispersive spectrometry analysis confirmed the typical austenitic structure of the deposited FeCrNi films and the compositions were in good accordance with 304 stainless steel target. Cross-sectional scanning electron microscopy images revealed the dense columnar nanocrystalline structure of the fabricated FeCrNi films. Nanoindentation measurements showed that the film fabricated at 300 °C exhibited the highest hardness value of 11.5 GPa. He desorption from FeCrNi-based films was traced by thermal desorption spectroscopy; the relatively low He desorption temperature range (150 °C–450 °C) implied that the charged He atoms were mainly located in interstitial sites of FeCrNi-based films. - Highlights: • He-charged columnar nanocrystalline FeCrNi films were prepared by DC magnetron sputtering. • Substrate temperature of 300 °C and He/Ar ratio 1:1 were the best sputtering parameters. • Compact and uniform microstructure obtained at 300 °C resulted in stable, high hardness. • Two He atoms' absorption/desorption mechanisms were revealed by TDS.

  4. Characterization of nanostructured Ti-B-(N) coatings produced by direct current magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Lopez-Cartes, C. [Instituto de Ciencia de Materiales de Sevilla (CSIC-Univ. Sevilla), Avda. Americo Vespucio 49, 41092 Sevilla (Spain)]. E-mail: clopez@icmse.csic.es; Martinez-Martinez, D. [Instituto de Ciencia de Materiales de Sevilla (CSIC-Univ. Sevilla), Avda. Americo Vespucio 49, 41092 Sevilla (Spain); Sanchez-Lopez, J.C. [Instituto de Ciencia de Materiales de Sevilla (CSIC-Univ. Sevilla), Avda. Americo Vespucio 49, 41092 Sevilla (Spain); Fernandez, A. [Instituto de Ciencia de Materiales de Sevilla (CSIC-Univ. Sevilla), Avda. Americo Vespucio 49, 41092 Sevilla (Spain); Garcia-Luis, A. [Fundacion INASMET, Mikeletegi Pasealekua 2, 20009 Donostia-San Sebastian (Spain); Brizuela, M. [Fundacion INASMET, Mikeletegi Pasealekua 2, 20009 Donostia-San Sebastian (Spain); Onate, J.I. [Fundacion INASMET, Mikeletegi Pasealekua 2, 20009 Donostia-San Sebastian (Spain)

    2007-02-26

    A series of Ti-B-(N) coatings prepared by dc magnetron sputtering using TiB{sub 2} targets in Ar/N{sub 2} gas mixtures has been chemically and structurally characterized by transmission electron microscopy, X-ray diffraction, electron energy-loss spectroscopy, and X-ray photoelectron spectroscopy. The influence of synthesis parameters such as applied heating power and nitrogen flow on the structure and chemical composition of the coatings has been studied. Independently of the experimental conditions employed during the synthesis, hexagonal TiB{sub 2} is the main crystalline phase present in the coatings. The use of N{sub 2} leads to the formation of an amorphous mixture of BN/TiN phases, as well as a diminution of the TiB{sub 2} crystalline phase. The influence of the composition and structure of the coatings on their hardness is also discussed.

  5. Combined optical emission and resonant absorption diagnostics of an Ar-O{sub 2}-Ce-reactive magnetron sputtering discharge

    Energy Technology Data Exchange (ETDEWEB)

    El Mel, A.A. [Chimie des Interactions Plasma-Surface (ChIPS), Research Institute for Materials Science and Engineering, Université de Mons, Place du Parc 23, Mons B-7000 (Belgium); Institut des Matériaux Jean Rouxel, Université de Nantes, CNRS, 2 rue de la Houssinière B.P. 32229, Nantes Cedex 3 44322 (France); Ershov, S. [Chimie des Interactions Plasma-Surface (ChIPS), Research Institute for Materials Science and Engineering, Université de Mons, Place du Parc 23, Mons B-7000 (Belgium); Britun, N., E-mail: nikolay.britun@umons.ac.be [Chimie des Interactions Plasma-Surface (ChIPS), Research Institute for Materials Science and Engineering, Université de Mons, Place du Parc 23, Mons B-7000 (Belgium); Ricard, A. [Université de Toulouse, UPS, INPT, LAPLACE (Laboratoire Plasma et Conversion d' Energie), 118 route de Narbonne, Toulouse Cedex 9 F-31062 (France); Konstantinidis, S. [Chimie des Interactions Plasma-Surface (ChIPS), Research Institute for Materials Science and Engineering, Université de Mons, Place du Parc 23, Mons B-7000 (Belgium); Snyders, R. [Chimie des Interactions Plasma-Surface (ChIPS), Research Institute for Materials Science and Engineering, Université de Mons, Place du Parc 23, Mons B-7000 (Belgium); Materia Nova Research Center, Parc Initialis, Avenue Copernic 1, Mons B-7000 (Belgium)

    2015-01-01

    We report the results on combined optical characterization of Ar-O{sub 2}-Ce magnetron sputtering discharges by optical emission and resonant absorption spectroscopy. In this study, a DC magnetron sputtering system equipped with a movable planar magnetron source with a Ce target is used. The intensities of Ar, O, and Ce emission lines, as well as the absolute densities of Ar metastable and Ce ground state atoms are analyzed as a function of the distance from the magnetron target, applied DC power, O{sub 2} content, etc. The absolute number density of the Ar{sup m} is found to decrease exponentially as a function of the target-to-substrate distance. The rate of this decrease is dependent on the sputtering regime, which should be due to the different collisional quenching rates of Ar{sup m} by O{sub 2} molecules at different oxygen contents. Quantitatively, the absolute number density of Ar{sup m} is found to be equal to ≈ 3 × 10{sup 8} cm{sup −3} in the metallic, and ≈ 5 × 10{sup 7} cm{sup −3} in the oxidized regime of sputtering, whereas Ce ground state densities at the similar conditions are found to be few times lower. The absolute densities of species are consistent with the corresponding deposition rates, which decrease sharply during the transition from metallic to poisoned sputtering regime. - Highlights: • Optical emission and resonant absorption spectroscopy are employed to study Ar-O{sub 2}-Ce magnetron sputtering discharges. • The density of argon metastables is found to decrease exponentially when increasing the target-to-substrate distance. • The collision-quenching rates of Ar{sup m} by O{sub 2} molecules at different oxygen contents is demonstrated. • The deposition rates of cerium and cerium oxide thin films decrease sharply during the transition from the metallic to the poisoned sputtering regime.

  6. Synthesis and characterization of photochromic Ag-embedded TiO{sub 2} nanocomposite thin films by non-reactive RF-magnetron sputter deposition

    Energy Technology Data Exchange (ETDEWEB)

    Zuo, J., E-mail: zuojuan@xmut.edu.cn [Department of Materials Science and Engineering, Xiamen University of Technology, Xiamen (China); Department of Interface Chemistry and Surface Engineering, Max-Planck-Institut fuer Eisenforschung GmbH, Duesseldorf (Germany); Keil, P. [Department of Interface Chemistry and Surface Engineering, Max-Planck-Institut fuer Eisenforschung GmbH, Duesseldorf (Germany); Grundmeier, G. [Department of Interface Chemistry and Surface Engineering, Max-Planck-Institut fuer Eisenforschung GmbH, Duesseldorf (Germany); Department of Chemical Engineering and Macromolecular Chemistry, University of Paderborn, Paderborn (Germany)

    2012-07-01

    Ag-embedded TiO{sub 2} nanocomposite thin film with reversible photochromic properties were prepared by layer-by-layer non-reactive RF-magnetron sputtering. Films were produced in Ar/O{sub 2} and pure Ar atmospheres. In the oxidizing regime, a diffusion of Ag from the film volume to the outer film surface was observed. Therefore, pure Ar plasma was applied in the deposition of TiO{sub 2}. The electronic and optical properties of the TiO{sub 2} film were almost not affected by the presence of oxygen. Transmission electron microscopy (TEM) and reflection mode X-ray absorption spectroscopy (XAS) were performed to study the morphology, crystal structure and chemical state of the embedded Ag nanoparticles before and after the annealing step. Annealing of the film led to the crystallization of the TiO{sub 2} matrix. Moreover, the Ag nanoparticles in the film underwent Ostwald ripening leading to particle agglomerate. No oxidation of the embedded Ag during the sputter deposition and subsequent annealing process was found as confirmed by XAS measurements. The non-reactive RF-magnetron method is believed to avoid the energetic oxygen ions attack to Ag during the deposition of Ag-embedded TiO{sub 2} nanocomposite and thus the films are expected to have better optical properties and long-term stability.

  7. Reactive magnetron sputtering of highly (001)-textured WS2-x films: Influence of Ne+, Ar+ and Xe+ ion bombardment on the film growth

    Science.gov (United States)

    Ellmer, K.; Seeger, S.; Sieber, I.; Bohne, W.; Röhrich, J.; Strub, E.; Mientus, R.

    2006-02-01

    Tungsten disulfide WS2 is a layer-type semi-conductor with an energy band gap and an absorption coefficient making it suitable as an absorber for thin film solar cells. In the article [1] WS2-x films were pre-pared by reactive magnetron sputtering from a metallic tungsten target in Ar-H2S atmospheres.The cover figure shows in situ energy-dispersive X-ray diffraction patterns for films deposited at different substrate potentials, i.e. for deposition conditions with ion assistance at different ion energies. These spectra and the corresponding SEM photographs of the film morphology show the strong influence of the ion energy on the film growth. The crystallographic struc-ture of WS2-x is shown between the two SEM pictures.The first author, Klaus Ellmer, is working at the Hahn-Meitner-Institut Berlin, Dept. of Solar Energy Research. His research fields are thin film deposition by reactive magnetron sputtering for solar cells, plasma characterization, in situ energy-dispersive X-ray diffraction and electronic transport in transpar-ent conductive oxides.

  8. Bi{sub 4}V{sub 2}O{sub 11} and BITAVOX.20 coatings deposited by reactive magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Dereeper, E., E-mail: eloi.dereeper@utbm.fr [IRTES-LERMPS, UTBM, Site de Montbéliard, F90010 Belfort Cedex (France); Briois, P. [IRTES-LERMPS, UTBM, Site de Montbéliard, F90010 Belfort Cedex (France); Vannier, R.-N. [Unité de Catalyse et de Chimie du Solide, UMR CNRS 8181, Université Lille 1, ENSCL, BP 90108, 59652 Villeneuve d' Ascq Cedex (France); Billard, A. [IRTES-LERMPS, UTBM, Site de Montbéliard, F90010 Belfort Cedex (France)

    2015-03-01

    Bi{sub 4}V{sub 2}O{sub 11} and BITAVOX.20 films were deposited by magnetron sputtering in reactive conditions from Bi, V and Ta metallic targets. The influence of sputtering conditions on the films composition was studied and then a structural study at variable temperature was carried out. Before annealing, the films were amorphous and the γ-Bi{sub 4}V{sub 2}O{sub 11} structure was obtained for a treatment at temperatures over 550 °C whereas BITAVOX.20 started to crystallise at 425 °C. In both cases, crystallisation occurred via an intermediate fluorite phase presenting a tetragonal deformation as already observed for other compounds with the Aurivillius structure. - Highlights: • Bi{sub 4}V{sub 2}O{sub 11} and BITAVOX.20 were synthesized by reactive magnetron co-sputtering. • Crystallization of the coatings was studied by X-ray diffraction in temperature. • High temperature γ form grows from a new type of intermediate phase. • The conductivity of Bi{sub 4}V{sub 2}O{sub 11} coatings was investigated by impedance spectroscopy measurements along the sample surface.

  9. Deposition and Characterization of Molybdenum Thin Film Using Direct Current Magnetron and Atomic Force Microscopy

    Directory of Open Access Journals (Sweden)

    Muhtade Mustafa Aqil

    2017-01-01

    Full Text Available In this paper, pure molybdenum (Mo thin film has been deposited on blank Si substrate by DC magnetron sputtering technique. The deposition condition for all samples has not been changed except for the deposition time in order to study the influence of time on the thickness and surface morphology of molybdenum thin film. The surface profiler has been used to measure the surface thickness. Atomic force microscopy technique was employed to investigate the roughness and grain structure of Mo thin film. The thickness and grain of molybdenum thin film layer has been found to increase with respect to time, while the surface roughness decreases. The average roughness, root mean square roughness, surface skewness, and surface kurtosis parameters are used to analyze the surface morphology of Mo thin film. Smooth surface has been observed. From grain analysis, a uniform grain distribution along the surface has been found. The obtained results allowed us to decide the optimal time to deposit molybdenum thin film layer of 20–100 nm thickness and subsequently patterned as electrodes (source/drain in carbon nanotube-channel transistor.

  10. Role of oxygen flow rate on the structural and optical properties of copper oxide thin films grown by reactive magnetron sputtering

    Science.gov (United States)

    Ali, M.; Gobinner, C. R.; Kekuda, D.

    2016-02-01

    Copper oxide thin films were grown by DC reactive magnetron sputtering. The structural investigation of the sputtered films was carried out using X-ray diffraction. The surface morphology of the films was observed through atomic force microscopy. A crossover in the crystalline phase from cuprous to cupric oxide (tenorite) was observed as a result of variation in the oxygen flow rate during sputtering. Deposition rate was also found to be a function of the oxygen flow rate, and it was found that the deposition rate decreased with an increase in the oxygen flow rate which could be attributed to the possible target oxidation at higher oxygen flow rates. Variation of grain size of the films with oxygen flow rate was analyzed through AFM analysis. Dependence of oxygen flow rate on the formation of two phases of copper oxide was also confirmed through the optical band gap measurements.

  11. Structural, optical and electrical properties of Cd-doped SnO{sub 2} thin films grown by RF reactive magnetron co-sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Moure-Flores, F. de, E-mail: jdemoure@fis.cinvestav.mx [Physics Department, CINVESTAV-IPN, Apdo. Postal 14-740, Mexico D.F. 07000 (Mexico); Quinones-Galvan, J.G.; Hernandez-Hernandez, A.; Guillen-Cervantes, A. [Physics Department, CINVESTAV-IPN, Apdo. Postal 14-740, Mexico D.F. 07000 (Mexico); Santana-Aranda, M.A. [Univ Guadalajara, CUCEI, Dept Fis, Guadalajara 44430, Jalisco (Mexico); Olvera, M. de la L. [Electrical Engineering Department, Solid State Section, CINVESTAV-IPN, Apdo. Postal 14-740, Mexico D.F. 07000 (Mexico); Melendez-Lira, M. [Physics Department, CINVESTAV-IPN, Apdo. Postal 14-740, Mexico D.F. 07000 (Mexico)

    2012-01-15

    Transparent conducting SnO{sub 2}:Cd thin films were prepared by RF reactive magnetron co-sputtering on glass slides at a substrate temperature of 500 Degree-Sign C using CdO as cadmium source. The films were deposited under a mixed argon/oxygen atmosphere. The structural, optical and electrical properties were analyzed as a function of the Cd amount in the target. The X-ray diffraction shows that polycrystalline films were grown with both the tetragonal and orthorhombic phases of SnO{sub 2}. The obtained films have high transmittance and conductivity. The figure of merit of SnO{sub 2}:Cd films are in the order of 10{sup -3} {Omega}{sup -1}, which suggests that these films can be considered as candidates for transparent electrodes.

  12. Structure and properties of Al-doped ZnO transparent conductive thin-films prepared by asymmetric bipolar pulsed DC reactive magnetron sputtering.

    Science.gov (United States)

    Hsu, Fu-Yung; Chen, Tse-Hao; Peng, Kun-Cheng

    2009-07-01

    Transparent conductive thin-films of aluminum-doped zinc oxide (AZO) were deposited on STN-glass substrates by an asymmetric bipolar pulsed DC (ABPDC) reactive magnetron sputtering system. Two different alloys, Zn-1.6 wt% Al and Zn-3.0 wt% Al, were used as the sputtering targets. The films consist of columnar grains with a preferred orientation of c-axis. Strong crystal distortion and high density stacking faults were observed in high resolution TEM micrographs. The full-width at half-maximum (FWHM) of the (002) rocking curve has a close relationship with the resistivity of the films; the smaller the FWHM, the lower the resistivity. The lowest resistivity of 7.0 x 10(-4) omega-cm was obtained from the film deposited with Zn-1.6 wt% Al target at 200 degrees C.

  13. Studies of the composition, tribology and wetting behavior of silicon nitride films formed by pulsed reactive closed-field unbalanced magnetron sputtering

    Science.gov (United States)

    Yao, Zh. Q.; Yang, P.; Huang, N.; Wang, J.; Wen, F.; Leng, Y. X.

    2006-01-01

    Silicon nitride films were formed by pulsed reactive closed-field unbalanced magnetron sputtering of high purity Si targets in an Ar-N2 mixture. The effects of N2 fraction on the chemical composition, and tribological and wetting behaviors were investigated. The films deposited at a high N2 fraction were consistently N-rich. The surface microstructure changed from continuous granular surrounded by tiny void regions to a homogeneous and dense microstructure, and densitied as the N2 fraction is increased. The as-deposited films have a relatively low friction coefficient and better wear resistance than 316L stainless steel under dry sliding friction and experienced only abrasive wear. The decreased surface roughness and increased nitrogen incorporation in the film give rise to increased contact angle with double-stilled water from 24° to 49.6°. To some extent, the silicon nitride films deposited are hydrophilic in nature.

  14. Structural, electrical and magnetic characterization of in-situ crystallized ZnO:Co thin films synthesized by reactive magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Lardjane, Soumia, E-mail: lardjanesoumia@yahoo.fr [IRTES-LERMPS, UTBM, Site de Montbéliard, 90010 Belfort Cedex (France); Division Etude et Prédiction des Matériaux, Unité de Recherche Matériaux et Energies Renouvelables, Université Abou Bekr Belkaid, Tlemcen (Algeria); Pour Yazdi, Mohammad Arab [IRTES-LERMPS, UTBM, Site de Montbéliard, 90010 Belfort Cedex (France); Martin, Nicolas [FEMTO-ST, Département MN2S, UMR 6174 CNRS, Université de Franche-Comté, ENSMM, UTBM, 32, Avenue de l’Observatoire, 25044 Besancon Cedex (France); Bellouard, Christine [Laboratoire de Physique des Matériaux, Nancy University, CNRS, 54506 Vandoeuvre-lès-Nancy Cedex (France); Fenineche, Nour-eddine [IRTES-LERMPS, UTBM, Site de Montbéliard, 90010 Belfort Cedex (France); Schuler, Andreas [Solar Energy and Buildings Physics Laboratory, EPFL ENAC IIC LESO-PB, Station 18, Bâtiment LE, 1015 Lausanne (Switzerland); Merad, Ghouti [Division Etude et Prédiction des Matériaux, Unité de Recherche Matériaux et Energies Renouvelables, Université Abou Bekr Belkaid, Tlemcen (Algeria); Billard, Alain [IRTES-LERMPS, UTBM, Site de Montbéliard, 90010 Belfort Cedex (France)

    2015-07-01

    Zn{sub 1−x}Co{sub x}O (0 < x < 0.146) conductive thin films have been deposited by reactive magnetron sputtering of metallic Zn and Co targets at high pressure and temperature. The structural properties have been investigated by using X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). It has been observed that all as-deposited films are crystallized in pure hcp ZnO structure and neither traces of metallic nor oxide Co-rich clusters were detected. The average grain size estimated from full width at half maximum of XRD results varied between 65 and 83 nm. XPS analyses exhibit that Co ions are successfully entered into ZnO lattice as Co{sup +2}. The electrical properties including conductivity, carrier density and carrier mobility were determined by Hall effect measurements in a temperature range from 300 K to 475 K. The conductivity of the films decreases from σ{sub 300K} = 2.2 × 10{sup 4} to 2.3 × 10{sup −1} Sm{sup −1} as the Co content changes from 0 to 0.146. Magnetic measurements reveal the absence of ferromagnetism even at 3 K and a paramagnetic Curie–Weiss behavior associated to magnetic clusters. - Highlights: • Zn{sub 1−x}Co{sub x}O conductive thin films were synthesized by reactive magnetron sputtering. • Structural characterization exhibited the absence of Co clusters or secondary phases. • The film conductivity decreased with increasing of Co concentration. • No ferromagnetism was observed in all Co doped ZnO samples. • Magnetic properties are described by a Curie–Weiss behavior associated to clusters.

  15. Effect of N Concentration on Microstructure Evolution of the Nanostructured (Al, Ti, SiN Coatings Prepared by d.c. Reactive Magnetron Sputtering

    Directory of Open Access Journals (Sweden)

    L. Jakab-Farkas

    2009-12-01

    Full Text Available Nanostructured (Al, Ti, SiN thin film coatings were synthesized by d.c. reactive magnetron sputtering, performed in an Ar/N2 gas mixture from a planar rectangular Al:Ti:Si=50:25:25 alloyed target. The mass flow of N2 reactive gas was strictly controlled in sputtering process. Conventional transmission electron microscopy (TEM technique was used for microstructure investigation of the as deposited films. Cross-sectional cuts performed through the deposited films revealed distinct microstructure evolution for different samples. It was found that the variation of the reactive gas amount induced changes in film microstructure. The metallic AlTiSi film exhibited strong columnar growth with a crystalline structure. The addition of a small amount of nitrogen to the process gas leads to a crystallite refinement. Further increase of N concentration resulted in evolution of fine lamellae growth morphology consisting of hainlike pearls in a dendrite, clusters of very fine grains in close crystallographic orientation.

  16. Fabrication of Nb{sub 2}O{sub 5}/SiO{sub 2} mixed oxides by reactive magnetron co-sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Juškevičius, Kęstutis, E-mail: kestutis.juskevicius@ftmc.lt [Center for Physical Sciences and Technology, Savanorių ave. 231, LT-02300 Vilnius (Lithuania); Audronis, Martynas, E-mail: m.audronis@yahoo.co.uk [Department of Materials Science and Engineering, The University of Sheffield, Sir Robert Hadfield Building, Mappin street, S1 3JD (United Kingdom); Subačius, Andrius; Kičas, Simonas; Tolenis, Tomas; Buzelis, Rytis; Drazdys, Ramutis; Gaspariūnas, Mindaugas; Kovalevskij, Vitalij [Center for Physical Sciences and Technology, Savanorių ave. 231, LT-02300 Vilnius (Lithuania); Matthews, Allan; Leyland, Adrian [Department of Materials Science and Engineering, The University of Sheffield, Sir Robert Hadfield Building, Mappin street, S1 3JD (United Kingdom)

    2015-08-31

    This paper investigates niobia/silica mixed oxide thin films deposited by reactive pulse-DC/RF magnetron co-sputtering of Nb and Si metal targets at room temperature. The reactive gas flow during the sputtering processes was either controlled by direct mass flow rate (i.e. constant reactive gas flow) or by an active feedback process control system. 61% and 137% higher deposition rates of Nb{sub 2}O{sub 5} and SiO{sub 2} layers, respectively, were obtained using the latter technique as compared to constant reactive gas flow. Films exhibited bulk or near-bulk density. All mixture films produced in this study had an amorphous structure. A volume law of mixtures was used to determine the coating composition. It is shown that the fraction of SiO{sub 2} or/and Nb{sub 2}O{sub 5} has a linear dependency on sputter target power density. On this basis, rugate filter coating designs can be easily deposited, where refractive index gradually varies between that of pure Nb{sub 2}O{sub 5} and pure SiO{sub 2}. Substantially less inhomogeneity of coating mixtures was found in films produced using a reactive sputtering process with feedback-control. - Highlights: • 61% and 137% increase in deposition rates of Nb{sub 2}O{sub 5} and SiO{sub 2} • Rugate coating designs can be readily deposited. • Nb{sub 2}O{sub 5}/SiO{sub 2} mixture films exhibited bulk or near-bulk density. • Optimized process leads to stoichiometric and homogenous mixtures. • Films are amorphous and suitable for low loss optical coatings.

  17. Optical properties of aluminum nitride thin films grown by direct-current magnetron sputtering close to epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Stolz, A. [Institut d' Electronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, PRES Lille, Université Nord de France, Avenue Poincaré, 59652 Villeneuve d' Ascq Cedex (France); Soltani, A., E-mail: ali.soltani@iemn.univ-lille1.fr [Institut d' Electronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, PRES Lille, Université Nord de France, Avenue Poincaré, 59652 Villeneuve d' Ascq Cedex (France); Abdallah, B. [Department of Materials Physics, Atomic Energy Commission of Syria, Damascus, P.O. Box 6091 (Syrian Arab Republic); Charrier, J. [Fonctions Optiques pour les Technologies de l' informatiON (FOTON), UMR CNRS 6082, 6, rue de Kerampont CS 80518, 22305 Lannion Cedex (France); Deresmes, D. [Institut d' Electronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, PRES Lille, Université Nord de France, Avenue Poincaré, 59652 Villeneuve d' Ascq Cedex (France); Jouan, P.-Y.; Djouadi, M.A. [Institut des Matériaux Jean Rouxel – IMN, UMR CNRS 6502, 2, rue de la Houssinère BP 32229, 44322 Nantes (France); Dogheche, E.; De Jaeger, J.-C. [Institut d' Electronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, PRES Lille, Université Nord de France, Avenue Poincaré, 59652 Villeneuve d' Ascq Cedex (France)

    2013-05-01

    Low-temperature Aluminum Nitride (AlN) thin films with a thickness of 3 μm were deposited by Direct-Current magnetron sputtering on sapphire substrate. They present optical properties similar to those of epitaxially grown films. Different characterization methods such as X-Ray Diffraction, Transmission Electron Microscopy and Atomic Force Microscopy were used to determine the structural properties of the films such as its roughness and crystallinity. Newton interferometer was used for stress measurement of the films. Non-destructive prism-coupling technique was used to determine refractive index and thickness homogeneity by a mapping on the whole sample area. Results show that AlN films grown on AlGaN layer have a high crystallinity close to epitaxial films, associated to a low intrinsic stress for low thickness. These results highlight that it is possible to grow thick sample with microstructure and optical properties close to epitaxy, even on a large surface. - Highlights: ► Aluminum Nitride sputtering technique with a low temperature growth process ► Epitaxial quality of two microns sputtered Aluminum Nitride film ► Optics as a non-destructive accurate tool for acoustic wave investigation.

  18. Surface textured molybdenum doped zinc oxide thin films prepared for thin film solar cells using pulsed direct current magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Y.C., E-mail: ielinyc@cc.ncue.edu.tw; Wang, B.L.; Yen, W.T.; Shen, C.H.

    2011-06-01

    In this study, we examined the effect of etching on the electrical properties, transmittance, and scattering of visible light in molybdenum doped zinc oxide, ZnO:Mo (MZO) thin films prepared by pulsed direct current magnetron sputtering. We used two different etching solutions - KOH and HCl - to alter the surface texture of the MZO thin film so that it could trap light. The experimental results showed that an MZO film with a minimum resistivity of about 8.9 x 10{sup -4} {Omega} cm and visible light transitivity of greater than 80% can be obtained without heating at a Mo content of 1.77 wt.%, sputtering power of 100 W, working pressure of 0.4 Pa, pulsed frequency of 10 kHz, and film thickness of 500 nm. To consider the effect of resistivity and optical diffuse transmittance, we performed etching of an 800 nm thick MZO thin film with 0.5 wt.% HCl for 3-6 s at 300 K. Consequently, we obtained a resistivity of 1.74-2.75 x 10{sup -3} {Omega} cm, total transmittance at visible light of 67%-73%, diffuse transmittance at visible light of 25.1%-28.4%, haze value of 0.34-0.42, and thin film surface crater diameters of 220-350 nm.

  19. Tuning the Photocatalytic Activity of Anatase TiO2 Thin Films by Modifying the Preferred <001> Grain Orientation with Reactive DC Magnetron Sputtering

    Directory of Open Access Journals (Sweden)

    B. Stefanov

    2014-08-01

    Full Text Available Anatase TiO2 thin films were deposited by DC reactive magnetron sputtering on glass substrates at 20 mTorr pressure in a flow of an Ar and O2 gas mixture. The O2 partial pressure (PO2 was varied from 0.65 mTorr to 1.3 mTorr to obtain two sets of films with different stoichiometry. The structure and morphology of the films were characterized by secondary electron microscopy, atomic force microscopy, and grazing-angle X-ray diffraction complemented by Rietveld refinement. The as-deposited films were amorphous. Post-annealing in air for 1 h at 500 °C resulted in polycrystalline anatase film structures with mean grain size of 24.2 nm (PO2 = 0.65 mTorr and 22.1 nm (PO2 = 1.3 mTorr, respectively. The films sputtered at higher O2 pressure showed a preferential orientation in the <001> direction, which was associated with particle surfaces exposing highly reactive {001} facets. Films sputtered at lower O2 pressure exhibited no, or very little, preferential grain orientation, and were associated with random distribution of particles exposing mainly the thermodynamically favorable {101} surfaces. Photocatalytic degradation measurements using methylene blue dye showed that <001> oriented films exhibited approximately 30% higher reactivity. The measured intensity dependence of the degradation rate revealed that the UV-independent rate constant was 64% higher for the <001> oriented film compared to randomly oriented films. The reaction order was also found to be higher for <001> films compared to randomly oriented films, suggesting that the <001> oriented film exposes more reactive surface sites.

  20. A study of the oxygen dynamics in a reactive Ar/O2 high power impulse magnetron sputtering discharge using an ionization region model

    Science.gov (United States)

    Lundin, D.; Gudmundsson, J. T.; Brenning, N.; Raadu, M. A.; Minea, T. M.

    2017-05-01

    The oxygen dynamics in a reactive Ar/O2 high power impulse magnetron sputtering discharge has been studied using a new reactive ionization region model. The aim has been to identify the dominating physical and chemical reactions in the plasma and on the surfaces of the reactor affecting the oxygen plasma chemistry. We explore the temporal evolution of the density of the ground state oxygen molecule O 2 ( X 1 Σg - ) , the singlet metastable oxygen molecules O 2 ( a 1 Δ g ) and O 2 ( b 1 Σ g ) , the oxygen atom in the ground state O(3P), the metastable oxygen atom O(1D), the positive ions O2 + and O+, and the negative ion O-. We furthermore investigate the reaction rates for the gain and loss of these species. The density of atomic oxygen increases significantly as we move from the metal mode to the transition mode, and finally into the compound (poisoned) mode. The main gain rate responsible for the increase is sputtering of atomic oxygen from the oxidized target. Both in the poisoned mode and in the transition mode, sputtering makes up more than 80% of the total gain rate for atomic oxygen. We also investigate the possibility of depositing stoichiometric TiO2 in the transition mode.

  1. Reactive magnetron sputtering of Nb-doped TiO{sub 2} films: Relationships between structure, composition and electrical properties

    Energy Technology Data Exchange (ETDEWEB)

    Seeger, Stefan, E-mail: seeger@out-ev.de [Optotransmitter-Umweltschutz-Technologie e.V., Köpenicker Str. 325, 12555 Berlin (Germany); Ellmer, Klaus [Helmholtz-Zentrum Berlin für Materialien und Energie, Hahn-Meitner-Platz 1, 14109 Berlin (Germany); Weise, Michael [Optotransmitter-Umweltschutz-Technologie e.V., Köpenicker Str. 325, 12555 Berlin (Germany); Gogova, Daniela [Central Lab of Solar Energy and New Energy Sources at the Bulg. Acad. Sci., Blvd. Tzarigradsko shose 72, Sofia (Bulgaria); Abou-Ras, Daniel [Helmholtz-Zentrum Berlin für Materialien und Energie, Hahn-Meitner-Platz 1, 14109 Berlin (Germany); Mientus, Rainald [Optotransmitter-Umweltschutz-Technologie e.V., Köpenicker Str. 325, 12555 Berlin (Germany)

    2016-04-30

    Niobium-doped TiO{sub 2} films as highly transparent conducting oxides for electrical contacts were investigated. As-deposited films were amorphous and exhibited high resistivities ranging from 10 to 10{sup 5} Ω cm. A slight oxygen deficiency in as-deposited films was essential to gain low resistivities (10{sup −3} Ω cm) and low optical absorption coefficients (α{sub 550} {sub nm} < 2 × 10{sup 3} cm{sup −1}) in the annealed films. Therefore, we controlled the oxygen stoichiometry during the film deposition by adjusting the magnetron discharge voltage, while the oxygen gas flow was kept constant. The Hall mobility of degenerately doped films (electron concentration > 10{sup 20} cm{sup −3}) increased with decreasing substrate temperature owing to metal-like phonon scattering in these samples. - Highlights: • Slight oxygen deficient as-deposited films were highly conductive after annealing. • Control of oxygen stoichiometry by adjusting the discharge voltage during deposition • Electron mobility at room temperature is limited due to scattering at phonons. • Films exhibited large average crystallite sizes with planar structural defects.

  2. Cu2SixSn1-xS3 Thin Films Prepared by Reactive Magnetron Sputtering For Low-Cost Thin Film Solar Cells

    Institute of Scientific and Technical Information of China (English)

    YAN Chang; LIU Fang-Yang; LAI Yan-Qing; LI Jie; LIU Ye-Xiang

    2011-01-01

    We report the preparation of Cu2SixSn1-xS3 thin films for thin film solar cell absorbers using the reactive magnetron co-sputtering technique.Energy dispersive spectrometer and x-ray diffraction analyses indicate that Cu2Si1-xSnxS3 thin films can be synthesized successfully by partly substituting Si atoms for Sn atoms in the Cu2SnS3 lattice,leading to a shrinkage of the lattice,and,accordingly,by 2θ shifting to larger values.The blue shift of the Raman peak further confirms the formation of Cu2SixSn1-xS3.Environmental scanning electron microscope analyses reveal a polycrystalline and homogeneous morphology with a grain size of about 200-300 nm.Optical measurements indicate an optical absorption coefficient of higher than 104 cm-1 and an optical bandgap of 1.17±0.01 eV.Solar cells based on Cu(In,Ga)Se2 (CIGS) absorbers have achieved conversion efficiencies as high as 20.3%,holding the record for thin film photovoltaics.[1] However,using the rare and expensive elements In and Ga limits the scalability to GWp/yr power production levels.Fortunately,Cu2SixSn1-xS3 (CSTS) is one of the potential earthabundant alternatives to Cu(In,Ga)Se2,and can replace In and Ga with inexpensive and benign elements due to its similar electronic and crystal structure.[2- 5]%We report the preparation of Cu2SixSn1-xS3 thin 61ms for thin 61m solar cell absorbers using the reactive magnetron co-sputtering technique. Energy dispersive spectrometer and x-ray diffraction analyses indicate that Cu2Si1-xSnxS3 thin films can be synthesized successfully by partly substituting Si atoms for Sn atoms in the CuzSnS3 lattice, leading to a shrinkage of the lattice, and, accordingly, by 20 shifting to larger values. The blue shift of the Raman peak further con6rms the formation of Cu2SixSn1-xS3. Environmental scanning electron microscope anaiyses reveal a polycrystalline and homogeneous morphology with a grain size of about 200-300 nm. Optical measurements indicate an optical absorption coefficient of

  3. Structure and magnetic properties of columnar Fe-N thin films deposited by direct current magnetron sputtering

    Institute of Scientific and Technical Information of China (English)

    JIA Hui; WANG Xin; PANG Shao-ping; ZHENG Wei-tao; LONG Bei-hong; LI Bo

    2009-01-01

    Columnar Fe-N thin films with thickness ranging from 30 to 150 nm were deposited by direct current magnetron sputtering using an Ar/N2 gas mixture (V(N2)/V(N2+Ar)=5%) on corning glass substrates. The structure, surface morphology and magnetic properties were investigated using X-ray diffractometry(XRD), scanning electron microscopy, atomic force microscopy, transmission electron microscopy(TEM) and superconducting quantum interference magnetometry. XRD investigation shows that Fe-N films exhibit amorphous-like structures; however, TEM measurements indicate the synthesis of mixture phases of α-Fe+ζ-Fe2N+ε-Fe3N in these films. The magnetic anisotropy and coercivity of Fe-N thin films exhibit strong dependence on the film growth behavior and surface morphology. With increasing the height of Fe-N films with column structures, the coercivity increases from 7.96 kA/m to 22.28 kA/m in the direction parallel to the film surface. In perpendicular direction the coercivity only increases slightly from 39.79 kA/m to 43.77 kA/m. However, the values of anisotropy field increase from 0.79×106 to 1.44×106 A/m, which is mainly attributed to the shape anisotropy of elongated columns due to the fact that the difference of magneto-crystalline anisotropy among these Fe-N films is small. The saturation magnetizations of Fe-N films vary with increasing film thickness from 23.5 to 85.1 A-m2/kg.

  4. Electrochromic properties and performance of NiOx films and their corresponding all-thin-film flexible devices preparedby reactive DC magnetron sputtering

    Science.gov (United States)

    Dong, Dongmei; Wang, Wenwen; Dong, Guobo; Zhang, Fan; He, Yingchun; Yu, Hang; Liu, Famin; Wang, Mei; Diao, Xungang

    2016-10-01

    Nickel oxide (NiOx) thin films were deposited by direct current magnetron sputtering technique onto flexible substrates with various oxygen (O2) partial pressures. The influence of O2 contents during deposition process on film structure, morphology, composition, optical and electrochromic (EC) characteristics of the films were investigated. The EC response for nonstoichiometric NiOx films shows a strong dependence on grain size variations and surface morphology. Finally, the multiple-layer stacks ITO/NiOx/Ta2O5:H/WO3/ITO were sequentially vacuum deposited over flexible polyethylene terephthalate plates based on the optimization of NiOx single layers. A large optical contrast up to 60% and a good durability are obtained for full device. To perform preliminary research on the mechanical properties within flexible devices, we introduced nontrivial changes to the interfacial properties by replacing the glass with flexible polymers. The effects were studied through static bending and the nano-scratch test.

  5. [Effects of Temperature on the Preparation of Al/Zn3N2 Thin Films Using Magnetron Reactive Sputtering].

    Science.gov (United States)

    Feng, Jun-qin; Chen, Jun-fang

    2015-08-01

    The effects of substrate temperature on the plasma active species were investigated by plasma optical emission spectroscopy. With increasing substrate temperature, the characteristic spectroscopy intensity of the first positive series of N2* (B(3)Πg-->A(3)Σu(+)), the second positive N2* (C(3)Πu-->B(3)Πg), the first negative series N2(+)* (B(2)Σu(+)-->X(2)Σg(+)) and Zn* are increased. Due to the substrate temperature, each ion kinetic energy is increased and the collision ionization intensified in the chamber. That leading to plasma ion density increase. These phenomenons's show that the substrate temperature raises in a certain range was conducive to zinc nitride thin films growth. Zn3N2 thin films were prepared on Al films using ion sources-assisted magnetron sputtering deposition method. The degree of crystalline of the films was examined with X-ray diffraction (XRD). The results show that has a dominant peak located at 34.359° in room temperature, which was corresponding to the (321) plane of cubic anti-bixbyite zinc nitride structure (JCPDS Card No35-0762). When the substrate temperature was 100 °C, in addition to the (321) reflection, more diffraction peaks appeared corresponding to the (222), (400) and (600) planes, which were located at 31.756°, 36.620° and 56.612° respectively. When the substrate temperature was 200 °C, in addition to the (321), (222), (400) and (600) reflection, more new diffraction peaks also appeared corresponding to the (411), (332), (431) and (622) planes, which were located at 39.070, 43.179°, 47.004° and 62.561° respectively. These results show the film crystalline increased gradually with raise the substrate temperature. XP-1 profilometer were used to analyze the thickness of the Zn3N2 films. The Zn3N2 films deposited on Al films in mixture gas plasma had a deposition rate of 2.0, 2.2, and 2.7 nm · min(-1). These results indicate that the deposition rate was gradually enhanced as substrate temperature increased

  6. CARBON NITRIDE FILMS PREPARED AT DIFFERENT N2/Ar RATIOS BY CLOSED FIELD UNBALANCED REACTIVE MAGNETRON SPUTTERING

    Institute of Scientific and Technical Information of China (English)

    A. Vyas; K.Y. Li; Z.F. Zhou; Y.G. Shen

    2005-01-01

    Carbon nitride (CNx) thin films have been deposited onto Si(100) (for structural and mechanical analyses) and M42 high-speed-steel (for tribological measurements) substrates at room temperature by closed-field unbalanced magnetron sputtering. The mechanical and tribological properties of these films were highly dependent on the N/C concentration ratio that was adjusted by the F(N2)/F(Ar) flow-rate ratio at fixed substrate biasing of -60V during deposition. The films were characterized by employing scanning electron microscopy (SEM), atomic force microscopy(AFM), nano-indentation measurements, X-ray photoelectron spectroscopy (XPS), Raman scattering and Fourier transform infrared (FTIR) spectroscopy, pin-on-disc tribometer, scratch tester, and Rockwell-C tester. The results showed that the N content in the films increased with the N2 pressure. However, the maximum N/C ratio obtained was 0.25. The nanohardness was measured to be in the range of 11.7-20.8GPa depending on the N/C ratios. The XPS N 1s spectra showed the existence of both N-C sp2 and N-C sp3 bonds in films. Raman and FTIR spectra exhibited that N-C bonds were fewer when compared to other N-C bonds. The friction coefficient of the film deposited onto steel substrate with N/C=0.26 was measured to be ~0.08and for film with N/C=0.22 a high critical load of 70N was obtained. The tribological data also showed that the wear rates of these films were in the range of~10-16m3/Nm, indicating excellent wear resistance for CNxfilms.

  7. Microstructural characterizations and hardness evaluation of d.c. reactive magnetron sputtered CrN thin films on stainless steel substrate

    Indian Academy of Sciences (India)

    Hetal N Shah; Vipin Chawla; R Jayaganthan; Davinder Kaur

    2010-04-01

    Chromium nitride (CrN) thin films were deposited on stainless steel (grade: SA304) substrate by using d.c. reactive magnetron sputtering and the influence of process parameters such as substrate temperature, pressure, and power on their microstructural characteristics were investigated in the present work. The CrN films were characterized with X-ray diffraction (XRD) to reveal the formation of different phases and its texture. The films showed the (111) preferred orientation but its intensity decreased, while intensity of peak (200) increased with increase in working pressure. The mixture of CrN and Cr2N phases were identified at low working pressure and temperature. The preferred orientations of CrN thin films are strongly influenced by sputtering conditions, thickness, and the induced residual stress in the films as observed in the present work. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) were used to characterize the morphology and surface topography of thin films, respectively. The study shows that the hardness of films strongly depends on the grain size and the film density, which are influenced by combined effect of the working pressure, temperature, and power of the sputtering process.

  8. Transmission photocathodes based on stainless steel mesh and quartz glass coated with N-doped DLC thin films prepared by reactive magnetron sputtering

    Science.gov (United States)

    Balalykin, N. I.; Huran, J.; Nozdrin, M. A.; Feshchenko, A. A.; Kobzev, A. P.; Arbet, J.

    2016-03-01

    The influence was investigated of N-doped diamond-like carbon (DLC) films properties on the quantum efficiency of a prepared transmission photocathode. N-doped DLC thin films were deposited on a silicon substrate, a stainless steel mesh and quartz glass (coated with 5 nm thick Cr adhesion film) by reactive magnetron sputtering using a carbon target and gas mixture Ar, 90%N2+10%H2. The elements' concentration in the films was determined by RBS and ERD. The quantum efficiency was calculated from the measured laser energy and the measured cathode charge. For the study of the vectorial photoelectric effect, the quartz type photocathode was irradiated by intensive laser pulses to form pin-holes in the DLC film. The quantum efficiency (QE), calculated at a laser energy of 0.4 mJ, rose as the nitrogen concentration in the DLC films was increased and rose dramatically after the micron-size perforation in the quartz type photocathodes.

  9. Studies on the electrical properties of reactive DC magnetron-sputtered indium-doped silver oxide thin films: The role of oxygen

    Energy Technology Data Exchange (ETDEWEB)

    Subrahmanyam, A. [Semiconductor Physics Laboratory, Department of Physics, Indian Institute of Technology Madras, Chennai 600036 (India)]. E-mail: manu@iitm.ac.in; Barik, Ullash Kumar [Semiconductor Physics Laboratory, Department of Physics, Indian Institute of Technology Madras, Chennai 600036 (India)

    2007-03-15

    Indium ({approx}10 at.%)-doped silver oxide (AIO) thin films have been prepared on glass substrates at room temperature (300 K) by reactive DC magnetron sputtering technique using an alloy target made of pure (99.99%) silver and indium (90:10 at.%) metals. The oxygen flow rates have been varied in the range 0.00-3.44 sccm during sputtering. The X-ray diffraction data on these indium-doped silver oxide films show polycrystalline nature. With increasing oxygen flow rate, the carrier concentration, the Hall mobility and the electron mean free path decrease. These films show a very low positive temperature coefficient of resistivity {approx}3.40x10{sup -8} ohm-cm/K. The work function values for these films (measured by Kelvin probe technique) are in the range 4.81-5.07 eV. The high electrical resistivity indicate that the films are in the island state (size effects). Calculations of the partial ionic charge (by Sanderson's theory) show that indium doping in silver oxide thin films enhance the ionicity.

  10. Characterization and Stability of Na-doped p-type ZnO Thin Films Preparation by Reactive DC Magnetron Sputtering

    Institute of Scientific and Technical Information of China (English)

    JI Zhen-guo; LIU Fang; HE Hai-yan; HAN Wei-zhi

    2009-01-01

    Na-doped p-type ZnO thin films have been realized by DC reactive magnetron sputtering with a set of metal-Zn targets doped with various Na contents and under different substrate temperatures,respectively.Hall effect measurement,field-emission SEM,X-ray diffraction and optical transmission were carried out to investigate the effects of Na content and substrate temperature on the properties of p-type films. Results indicate that all the Na-doped ZnO films are strongly (002) oriented,and have an average transmittance ~85% in the visible region.Na-doped p-type ZnO films with good structural,electrical,and optical properties can only be obtained at an intermediate amount of Na content and under appropriate substrate temperature.At the optimal condition,the Na-doped p-type ZnO has the lowest resistivity of 13.8Ω· cm with the carrier concentration as high as 1.07×10~(18) cm~(-3).The stability of the Na-doped p-type ZnO is also studied in this paper and it is found that the electrical properties keep stable in a period of one month.

  11. Effect of film thickness on structural and mechanical properties of AlCrN nanocompoite thin films deposited by reactive DC magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Prakash, Ravi; Kaur, Davinder, E-mail: dkaurfph@iitr.ac.in [Functional Nanomaterial Research lab, Department of Physics and Centre for Nanotechnology, Indian Institute of Technology Roorkee, Roorkee-247667, Uttarakhand (India)

    2016-05-06

    In this study, the influence of film thickness on the structural, surface morphology and mechanical properties of Aluminum chromium nitride (AlCrN) thin films has been successfully investigated. The AlCrN thin films were deposited on silicon (100) substrate using dc magnetron reactive co-sputtering at substrate temperature 400° C. The structural, surface morphology and mechanical properties were studied using X-ray diffraction, field-emission scanning electron microscopy and nanoindentation techniques respectively. The thickness of these thin films was controlled by varying the deposition time therefore increase in deposition time led to increase in film thickness. X-ray diffraction pattern of AlCrN thin films with different deposition time shows the presence of (100) and (200) orientations. The crystallite size varies in the range from 12.5 nm to 36.3 nm with the film thickness due to surface energy minimization with the higher film thickness. The hardness pattern of these AlCrN thin films follows Hall-Petch relation. The highest hardness 23.08 Gpa and young modulus 215.31 Gpa were achieved at lowest grain size of 12.5 nm.

  12. Effect of various nitrogen flow ratios on the optical properties of (Hf:N-DLC films prepared by reactive magnetron sputtering

    Directory of Open Access Journals (Sweden)

    Meng Qi

    2017-08-01

    Full Text Available Hf and N co-doped diamond-like carbon [(Hf:N-DLC] films were deposited on 316L stainless steel and glass substrates through reactive magnetron sputtering of hafnium and carbon targets at various nitrogen flow ratios (R=N2/[N2+CH4+Ar]. The effects of chemical composition and crystal structure on the optical properties of the (Hf:N-DLC films were studied. The obtained films consist of uniform HfN nanocrystallines embedded into the DLC matrix. The size of the graphite clusters with sp2 bonds (La and the ID/IG ratio increase to 2.47 nm and 3.37, respectively, with increasing R. The optical band gap of the films decreases from 2.01 eV to 1.84 eV with increasing R. This finding is consistent with the trends of structural transformations and could be related to the increase in the density of π-bonds due to nitrogen incorporation. This paper reports the influence of nitrogen flow ratio on the correlation among the chemical composition, crystal structure, and optical properties of (Hf:N-DLC films.

  13. Correlation of structural properties with energy transfer of Eu-doped ZnO thin films prepared by sol-gel process and magnetron reactive sputtering.

    Science.gov (United States)

    Petersen, Julien; Brimont, Christelle; Gallart, Mathieu; Schmerber, Guy; Gilliot, Pierre; Ulhaq-Bouillet, Corinne; Rehspringer, Jean-Luc; Colis, Silviu; Becker, Claude; Slaoui, Abdelillah; Dinia, Aziz

    2010-06-15

    We investigated the structural and optical properties of Eu-doped ZnO thin films made by sol-gel technique and magnetron reactive sputtering on Si (100) substrate. The films elaborated by sol-gel process are polycrystalline while the films made by sputtering show a strongly textured growth along the c-axis. X-ray diffraction patterns and transmission electron microscopy analysis show that all samples are free of spurious phases. The presence of Eu(2+) and Eu(3+) into the ZnO matrix has been confirmed by x-ray photoemission spectroscopy. This means that a small fraction of Europium substitutes Zn(2+) as Eu(2+) into the ZnO matrix; the rest of Eu being in the trivalent state. This is probably due to the formation of Eu(2)O(3) oxide at the surface of ZnO particles. This is at the origin of the strong photoluminescence band observed at 2 eV, which is characteristic of the (5)D(0)-->(7)F(2) Eu(3+) transition. In addition the photoluminescence excitonic spectra showed efficient energy transfer from the ZnO matrix to the Eu(3+) ion, which is qualitatively similar for both films although the sputtered films have a better structural quality compared to the sol-gel process grown films.

  14. Understanding of gas phase deposition of reactive magnetron sputtered TiO2 thin films and its correlation with bactericidal efficiency

    Science.gov (United States)

    Panda, A. B.; Mahapatra, S. K.; Barhai, P. K.; Das, A. K.; Banerjee, I.

    2012-10-01

    Nanostructured TiO2 thin films were deposited using RF reactive magnetron sputtering at different O2 flow rates (20, 30, 50 and 60 sccm) and constant RF power of 200 W. In situ investigation of the nucleation and growth of the films was made by Optical Emission Spectroscopy (OES). The nano amorphous nature as revealed from X-ray diffraction (XRD) of the as deposited films and abundance of the Ti3+ surface oxidation states and surface hydroxyl group (OH-) in the films deposited at 50 sccm as determined from X-ray photo electron spectroscopy (XPS) was explained on the basis of emission spectra studies. The increase in band gap and decrease in particle size with O2 flow rate was observed from transmission spectra of UV-vis spectroscopy. Photoinduced hydrophilicity has been studied using Optical Contact Angle (OCA) measurement. The post irradiated films showed improved hydrophilicity. The bactericidal efficiency of these films was investigated taking Escherichia coli as model bacteria. The films deposited at 50 sccm shows better bactericidal activity as revealed from the optical density (OD) measurement. The qualitative analysis of the bactericidal efficiency was depicted from Scanning Electron Microscope images. A correlation between bactericidal efficiency and the deposited film has been established and explained on the basis of nucleation growth, band gap and hydrophilicity of the films.

  15. Thermal stability of alumina thin films containing {gamma}-Al{sub 2}O{sub 3} phase prepared by reactive magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Musil, J., E-mail: musil@kfy.zcu.cz [Department of Physics, Faculty of Applied Sciences, University of West Bohemia, Univerzitni 22, CZ-306 14 Plzen (Czech Republic); Institute of Physics, Academy of Sciences of the Czech Republic, Na Slovance 2, CZ-182 21 Praha 8 (Czech Republic); Blazek, J.; Zeman, P.; Proksova, S.; Sasek, M.; Cerstvy, R. [Department of Physics, Faculty of Applied Sciences, University of West Bohemia, Univerzitni 22, CZ-306 14 Plzen (Czech Republic)

    2010-11-15

    The paper reports on thermal stability of alumina thin films containing {gamma}-Al{sub 2}O{sub 3} phase and its conversion to a thermodynamically stable {alpha}-Al{sub 2}O{sub 3} phase during a post-deposition equilibrium thermal annealing. The films were prepared by reactive magnetron sputtering and subsequently post-deposition annealing was carried out in air at temperatures ranging from 700 deg. C to 1150 deg. C and annealing times up to 5 h using a thermogravimetric system. The evolution of the structure was investigated by means of X-ray diffraction after cooling down of the films. It was found that (1) the nanocrystalline {gamma}-Al{sub 2}O{sub 3} phase in the films is thermally stable up to 1000 deg. C even after 5 h of annealing, (2) the nanocrystalline {theta}-Al{sub 2}O{sub 3} phase was observed in a narrow time and temperature region at {>=}1050 deg. C, and (3) annealing at 1100 deg. C for 2 h resulted in a dominance of the {alpha}-Al{sub 2}O{sub 3} phase only in the films with a sufficient thickness.

  16. Ion beam analysis, corrosion resistance and nanomechanical properties of TiAlCN/CN{sub x} multilayer grown by reactive magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Alemón, B.; Flores, M. [Departamento de Ingeniería de Proyectos, CUCEI, Universidad de Guadalajara, J. Guadalupe Zuno 48, Los Belenes, Zapopan, Jal. 45101 (Mexico); Canto, C. [Instituto de Física, UNAM, Avenida de la Investigación S/N, Coyoacán, Mexico, DF 04510 (Mexico); Andrade, E., E-mail: andrade@fisica.unam.mx [Instituto de Física, UNAM, Avenida de la Investigación S/N, Coyoacán, Mexico, DF 04510 (Mexico); Lucio, O.G. de [Instituto de Física, UNAM, Avenida de la Investigación S/N, Coyoacán, Mexico, DF 04510 (Mexico); Rocha, M.F. [ESIME-Z, Instituto Politécnico Nacional, ALM Zacatenco, Mexico, DF 07738 (Mexico); Broitman, E. [Thin Films Physics Division, IFM, Linköping University, SE-58183 Linköping (Sweden)

    2014-07-15

    A novel TiAlCN/CN{sub x} multilayer coating, consisting of nine TiAlCN/CN{sub x} periods with a top layer 0.5 μm of CN{sub x}, was designed to enhance the corrosion resistance of CoCrMo biomedical alloy. The multilayers were deposited by dc and RF reactive magnetron sputtering from Ti{sub 0.5}Al{sub 0.5} and C targets respectively in a N{sub 2}/Ar plasma. The corrosion resistance and mechanical properties of the multilayer coatings were analyzed and compared to CoCrMo bulk alloy. Ion beam analysis (IBA) and X-ray diffraction tests were used to measure the element composition profiles and crystalline structure of the films. Corrosion resistance was evaluated by means of potentiodynamic polarization measurements using simulated body fluid (SBF) at typical body temperature and the nanomechanical properties of the multilayer evaluated by nanoindentation tests were analyzed and compared to CoCrMo bulk alloy. It was found that the multilayer hardness and the elastic recovery are higher than the substrate of CoCrMo. Furthermore the coated substrate shows a better general corrosion resistance than that of the CoCrMo alloy alone with no observation of pitting corrosion.

  17. Results on the electrochromic and photocatalytic properties of vanadium doped tungsten oxide thin films prepared by reactive dc magnetron sputtering technique

    Science.gov (United States)

    Muthu Karuppasamy, K.; Subrahmanyam, A.

    2008-02-01

    In this investigation, vanadium doped tungsten oxide (V : WO3) thin films are prepared at room temperature by reactive dc magnetron sputtering employing a tungsten-vanadium 'inlay' target. In comparison with pure sputtered tungsten oxide thin films, 11% vanadium doping is observed to decrease the optical band gap, enhance the colour neutral property, decrease the coloration efficiency (from 121 to 13 cm2 C-1), increase the surface work function (4.68-4.83 eV) and significantly enhance the photocatalytic efficiency in WO3 thin films. These observations suggest that (i) vanadium creates defect levels that are responsible for optical band gap reduction, (ii) multivalent vanadium bonding with terminal oxygen in the WO3 lattice gives rise to localized covalent bonds and thus results in an increase in the work function, and (iii) a suitable work function of V : WO3 with ITO results in an enhancement of the photocatalytic activity. These results on electrochromic and photocatalytic properties of V : WO3 thin films show good promise in the low maintenance window application.

  18. Results on the electrochromic and photocatalytic properties of vanadium doped tungsten oxide thin films prepared by reactive dc magnetron sputtering technique

    Energy Technology Data Exchange (ETDEWEB)

    Karuppasamy, K Muthu; Subrahmanyam, A [Semiconductor Laboratory, Department of Physics, Indian Institute of Technology Madras, Chennai 600036 (India)

    2008-02-07

    In this investigation, vanadium doped tungsten oxide (V : WO{sub 3}) thin films are prepared at room temperature by reactive dc magnetron sputtering employing a tungsten-vanadium 'inlay' target. In comparison with pure sputtered tungsten oxide thin films, 11% vanadium doping is observed to decrease the optical band gap, enhance the colour neutral property, decrease the coloration efficiency (from 121 to 13 cm{sup 2} C{sup -1}), increase the surface work function (4.68-4.83 eV) and significantly enhance the photocatalytic efficiency in WO{sub 3} thin films. These observations suggest that (i) vanadium creates defect levels that are responsible for optical band gap reduction, (ii) multivalent vanadium bonding with terminal oxygen in the WO{sub 3} lattice gives rise to localized covalent bonds and thus results in an increase in the work function, and (iii) a suitable work function of V : WO{sub 3} with ITO results in an enhancement of the photocatalytic activity. These results on electrochromic and photocatalytic properties of V : WO{sub 3} thin films show good promise in the low maintenance window application.

  19. A SMALL UNBALANCED MAGNETRON SPUTTERING SOURCE WITH MULTIPOLE MAGNETIC FIELD ANODE

    Institute of Scientific and Technical Information of China (English)

    郑思孝; 孙官清; 等

    1994-01-01

    A small unbalanced magnetron atom source with multipole cusp magnetic field anode is described.The co-axial magnetron rpinciple is extended to the circular planar magnetron atom source,which raises the efficiency of sputtering target area up to 60%.The multipole magnetic field is put in the anode.which makes the unbalanced magnetron atom source run in a higher discharge current at a lower arc voltage condition.Meanwhile.the sputtering atoms through out the anode can be ionized partially,because the electron reaching the anode have to suffer multiple collisons in order to advance across the multipole magnetic field lines in the anode,which enhances the chemical reactivity of the ejecting atoms in film growth and improve the property of film depositing.

  20. Reactive magnetron co-sputtering of Cu(In,Ga)Se{sub 2} absorber layers by a 2-stage process: Role of substrate type and Na-doping

    Energy Technology Data Exchange (ETDEWEB)

    Schulte, Jonas; Harbauer, Karsten; Ellmer, Klaus, E-mail: ellmer@helmholtz-berlin.de

    2015-05-01

    By simultaneous sputtering from metallic CuGa and In targets in an Ar:H{sub 2}Se atmosphere onto heated substrates, single phase and well crystallized Cu(In,Ga)Se{sub 2} thin films can be directly deposited in a single process step. However, the preparation of Cu-poor films, which are needed for high solar cell efficiencies, is impeded by the re-evaporation of excess indium, which occurs readily at moderate substrate temperatures in the range of 400 °C to 500 °C. Therefore, a significant In-excess is necessary during the second deposition stage in order to transform the final film composition into the desired Cu-poor regime ([Cu]/([In] + [Ga]) < 0.95). Higher open circuit voltages and efficiencies are achieved for absorbers produced with an intermediate Cu-rich composition and/or by using Na containing precursor films (NaF or Mo:Na). A best cell efficiency of 12.9% is achieved, which demonstrates the high potential of the investigated reactive magnetron sputtering process for solar cell manufacturing, as it is well suited for large-area, industrial applications. - Highlights: • Reactive sputtering in Ar:H{sub 2}Se allows the use of easy to fabricate targets. • Absorber quality can be improved by a 2-stage process. • The best cell has an efficiency of 12.9%. • Na-doping by NaF or Mo:Na precursors enhances the V{sub oc}.

  1. Structure and optical properties of Cd-substituted ZnO (Zn{sub 1-x}Cd{sub x}O) thin films synthesized by the dc reactive magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Jinghai; Yue, Yonggao; Sui, Yingrui; Cao, Yan; Wei, Maobin; Liu, Xiaoyan; Yang, Lili; Lang, Jihui; Li, Xuefei; Li, Xiuyan [Jilin Normal University, Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education, Institute of Condensed State Physics, Siping (China)

    2014-11-15

    The ternary Zn{sub 1-x}Cd{sub x}O (x = 0, 0.2) thin films with wurtzite structure and highly (002)-preferred orientations were deposited on glass substrates by the direct current (dc) reactive magnetron sputtering method. The X-ray diffraction, X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), optical absorption spectra and photoluminescence (PL) were employed to investigate the structural and the optical properties in detail. The results indicated that as x varied from x = 0-0.2, the diffraction angle of the (002) peaks decreased from ∝34.36 to ∝33.38 and the lattice spacing increased from 0.260 to 0.268 nm. Moreover, the optical band-gap of the Zn{sub 1-x}Cd{sub x}O thin films with the wurtzite structure decreased from 3.20 eV at x = 0-2.70 eV at x = 0.2. Correspondingly, the near-band-edge PL was tuned in a wide visible region from ∝393 to 467 nm. The chemical bonding states of Cd in Zn{sub 1-x}Cd{sub x}O alloy thin films were examined by XPS analysis. (orig.)

  2. The structural properties of CdS deposited by chemical bath deposition and pulsed direct current magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Lisco, F., E-mail: F.Lisco@lboro.ac.uk [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire, LE11 3TU (United Kingdom); Kaminski, P.M.; Abbas, A.; Bass, K.; Bowers, J.W.; Claudio, G. [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire, LE11 3TU (United Kingdom); Losurdo, M. [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR, via Orabona 4, 70126 Bari (Italy); Walls, J.M. [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire, LE11 3TU (United Kingdom)

    2015-05-01

    Cadmium sulphide (CdS) thin films were deposited by two different processes, chemical bath deposition (CBD), and pulsed DC magnetron sputtering (PDCMS) on fluorine doped-tin oxide coated glass to assess the potential advantages of the pulsed DC magnetron sputtering process. The structural, optical and morphological properties of films obtained by CBD and PDCMS were investigated using X-ray photoelectron spectroscopy, X-ray diffraction, scanning and transmission electron microscopy, spectroscopic ellipsometry and UV-Vis spectrophotometry. The as-grown films were studied and comparisons were drawn between their morphology, uniformity, crystallinity, and the deposition rate of the process. The highest crystallinity is observed for sputtered CdS thin films. The absorption in the visible wavelength increased for PDCMS CdS thin films, due to the higher density of the films. The band gap measured for the as-grown CBD-CdS is 2.38 eV compared to 2.34 eV for PDCMS-CdS, confirming the higher density of the sputtered thin film. The higher deposition rate for PDCMS is a significant advantage of this technique which has potential use for high rate and low cost manufacturing. - Highlights: • Pulsed DC magnetron sputtering (PDCMS) of CdS films • Chemical bath deposition of CdS films • Comparison between CdS thin films deposited by chemical bath and PDCMS techniques • High deposition rate deposition for PDCMS deposition • Uniform, pinhole free CdS thin films.

  3. Reactive current compensation with hybrid circuit; Blindstromkompensation mit Hybridschaltung

    Energy Technology Data Exchange (ETDEWEB)

    Henning Mueller, Janitza

    2013-06-01

    Compensation systems for reactive currents have to reduce costs. However, at excessively enhanced harmonic loads compensation systems are quickly overloaded and even become cost drivers. Plants in reinforced construction and improved technology are required. During rapid load fluctuations, compensation systems can be controlled better with thyristor controllers instead of slow shooter.

  4. Nitrogen doping on NiO by reactive magnetron sputtering: A new pathway to dynamically tune the optical and electrical properties

    Science.gov (United States)

    Keraudy, Julien; Ferrec, Axel; Richard-Plouet, Mireille; Hamon, Jonathan; Goullet, Antoine; Jouan, Pierre-Yves

    2017-07-01

    N-doped nickel oxide (NiO:N) thin films were deposited on glass and silicon substrates by reactive DC magnetron sputtering in Ar/O2/N2 gas atmosphere with a series of N2/O2 gas ratio ranging from 0 to 80%. X-ray diffraction measurements have revealed that the films are constituted of Ni1-xO grains and showed enhanced polycrystalline features with increasing N-doping concentration. For the first time, we report here that N-doping in the Ni-deficient NiO (Ni1-xO) film leads to a band-gap narrowing from 3.6 to 2.3 eV. X-ray photoelectron spectroscopy (XPS) measurements proved that up to 4 atomic percent (at.%) nitrogen can be incorporated at least at the surface of the NiO:N samples. In addition, XPS valence band spectra and UV-vis transmission measurements have demonstrated that the band-gap narrowing may originates from the contribution of an intermediate band (IB) ∼2.4 eV just above the valence band maximum and the up-shifting of the valence band edge (∼0.3 eV) due to the introduction of occupied N 2p states. Local I-V measurements, carried out by conductive AFM (C-AFM), have revealed that the extrinsic doping of N atoms within the oxide can be a good way to precisely control the electrical conductivity of such p-type materials.

  5. Low-loss interference filter arrays made by plasma-assisted reactive magnetron sputtering (PARMS) for high-performance multispectral imaging

    Science.gov (United States)

    Broßmann, Jan; Best, Thorsten; Bauer, Thomas; Jakobs, Stefan; Eisenhammer, Thomas

    2016-10-01

    Optical remote sensing of the earth from air and space typically utilizes several channels in the visible and near infrared spectrum. Thin-film optical interference filters, mostly of narrow bandpass type, are applied to select these channels. The filters are arranged in filter wheels, arrays of discrete stripe filters mounted in frames, or patterned arrays on a monolithic substrate. Such multi-channel filter assemblies can be mounted close to the detector, which allows a compact and lightweight camera design. Recent progress in image resolution and sensor sensitivity requires improvements of the optical filter performance. Higher demands placed on blocking in the UV and NIR and in between the spectral channels, in-band transmission and filter edge steepness as well as scattering lead to more complex filter coatings with thicknesses in the range of 10 - 25μm. Technological limits of the conventionally used ion-assisted evaporation process (IAD) can be overcome only by more precise and higher-energetic coating technologies like plasma-assisted reactive magnetron sputtering (PARMS) in combination with optical broadband monitoring. Optics Balzers has developed a photolithographic patterning process for coating thicknesses up to 15μm that is fully compatible with the advanced PARMS coating technology. This provides the possibility of depositing multiple complex high-performance filters on a monolithic substrate. We present an overview of the performance of recently developed filters with improved spectral performance designed for both monolithic filter-arrays and stripe filters mounted in frames. The pros and cons as well as the resulting limits of the filter designs for both configurations are discussed.

  6. Polyester fabric coated with Ag/ZnO composite film by magnetron sputtering

    Science.gov (United States)

    Yuan, Xiaohong; Xu, Wenzheng; Huang, Fenglin; Chen, Dongsheng; Wei, Qufu

    2016-12-01

    Ag/ZnO composite film was successfully deposited on polyester fabric by using direct current (DC) magnetron sputtering and radio frequency (RF) magnetron reaction sputtering techniques with pure silver (Ag) and zinc (Zn) targets. X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD) were used to examine the deposited film on the fabric. It was found that the zinc film coated on Ag film before RF reactive sputtering could protect the silver film from oxidation. Anti-ultraviolet property and antistatic property of the coated samples using different magnetron sputtering methods were also investigated. The experimental results showed that Ag film was oxidized into in Ag2O film in high vacuum oxygen environment. The deposition of Zn film on the surface of the fabric coated with Ag film before RF reactive sputtering, could successfully obtained Ag/ZnO composite film, and also generated structural color on the polyester fabric.

  7. Reactive magnetron sputter deposited CN{sub {ital x}}: Effects of N{sub 2} pressure and growth temperature on film composition, bonding, and microstructure

    Energy Technology Data Exchange (ETDEWEB)

    Zheng, W.T.; Sjoestroem, H.; Ivanov, I.; Xing, K.Z.; Broitman, E.; Salaneck, W.R.; Greene, J.E.; Sundgren, J. [Department of Physics, Linkoeping University, S-581 83 Linkoeping (Sweden)

    1996-09-01

    Effects of growth processes on chemical bond structure, microstructure, and mechanical properties of carbon-nitride (CN{sub {ital x}}) thin films, deposited by reactive magnetron sputtering in a pure N{sub 2} discharge, are reported. The film deposition rate {ital R}{sub {ital D}} increases with increasing N{sub 2} pressure {ital P}{sub N{sub 2}} while N/C ratios remain constant. Maximum N concentration was {approximately}35 at.%. {ital R}{sub {ital D}} was found to be dependent upon the film growth temperature {ital T}{sub {ital s}}. For a given {ital P}{sub N{sub 2}}, {ital R}{sub {ital D}} decreased slightly as {ital T}{sub {ital s}} was increased from 100 to 600 C. The variations in {ital R}{sub {ital D}} with both {ital P}{sub N{sub 2}} and {ital T}{sub {ital s}} can be explained by ion-induced desorption of cyano radicals CN{sub {ital x}} from both the target and growth surfaces during deposition. X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy (FTIR) analyses showed that N atoms in films grown at {ital T}{sub {ital s}}{approx_gt}350{degree}C with low nitrogen partial pressures {ital P}{sub N{sub 2}}, {approximately}2.5 mTorr, were bound to C atoms through hybridized {ital sp}{sup 2} and {ital sp}{sup 3} configurations. For low {ital T}{sub {ital s}}=100{degree}C and higher {ital P}{sub N{sub 2}}, 10 mTorr, triple-bonded C{equivalent_to}N was detected by FTIR. Two types of microstructures were observed by high-resolution transmission electron microscopy, depending on {ital T}{sub {ital s}}: an amorphous phase, containing crystalline clusters for films deposited at {ital T}{sub {ital s}}=100{degree}C, while a turbostraticlike or fullerenelike phase was observed for films deposited at {ital T}{sub {ital s}}{approx_gt}200{degree}C CN{sub {ital x}} films deposited a higher {ital T}{sub {ital s}} and lower {ital P}{sub N{sub 2}} were found to have higher hardness and elastic modulus. {copyright} {ital 1996 American Vacuum Society}

  8. Fluorine-doped tin oxide films grown by pulsed direct current magnetron sputtering with an Sn target.

    Science.gov (United States)

    Liao, Bo-Huei; Kuo, Chien-Cheng; Chen, Pin-Jen; Lee, Cheng-Chung

    2011-03-20

    Fluorine-doped tin oxide (FTO) films have been deposited by pulsed DC magnetron sputtering with an Sn target. Various ratios of CF4/O2 gas were injected to enhance the optical and electrical properties of the films. The extinction coefficient was lower than 1.5×10(-3) in the range from 400 to 800 nm when the CF4O2 ratio was 0.375. The resistivity of fluorine-doped SnO2 films (1.63×10(-3) Ω cm) deposited at 300 °C was 27.9 times smaller than that of undoped SnO2 (4.55×10(-2) Ω cm). Finally, an FTO film was consecutively deposited for protecting the oxidation of indium tin oxide films. The resistivity of the double-layered film was 2.68×10(-4) Ω cm, which increased by less than 39% at a 450 °C annealing temperature for 1 h in air.

  9. Microstructure and Optical Properties of AgxO Prepared by Direct-Current Magnetron-Sputtering Method

    Institute of Scientific and Technical Information of China (English)

    GAO Xiao-Yong; LIU Xu-Wei; WANG Song-You; LIU Yu-Fen; LIN Qing-Geng; LU Jing-Xiao

    2008-01-01

    @@ Two series of Agx O films are prepared on glass substrates by de magnetron-sputtering method at room temperature and 90℃ under different oxygen to argon gas ratio (OAR) conditions. The microstructure is investigated by XRD and SEM in order to obtain the information on the component evolution of AgO+Ag2 O to Ag2O. Its optical properties are investigated by reflectance and absorption spectroscopy to extract the information on metallic and dielectric behaviour evolution of Ag2O, AgO and silver particles and the interband transition. The results indicate that the AgxO film prepared at room temperature is mainly made up of AgO and Ag2O clusters while Ag2 O is the primary component of AgxO prepared at 90℃. The AgxO film mainly consisting of the primary component shows indirect interband transition structure occurring at 2.89eV. Combination of increasing OAR and substrate temperature is an effective method to lower the threshold of thermal decomposition temperature of Agx O and to deal with the bottleneck of short-wavelength optical and magneto-opticai storage.

  10. Review of Magnetron Developments

    Science.gov (United States)

    Vyas, Sandeep Kumar; Verma, Rajendra Kumar; Maurya, Shivendra; Singh, V. V. P.

    2016-09-01

    Magnetrons have been the most efficient high power microwave sources for decades. In the twenty-first century, many of the development works are headed towards the performance improvement of CW industrial magnetrons. In this review article, the development works and techniques, used on different types of magnetrons, for the performance enhancement in the past two decades have been discussed. The article focuses on the state of the art of CW magnetron and the direction it will take in foreseeable future. In addition it also glimpses some of the major variants of magnetron which have further opened up scope in mm-THz spectrum of electromagnetism.

  11. An efficient magnetron transmitter for superconducting accelerators

    Science.gov (United States)

    Kazakevich, G.; Lebedev, V.; Yakovlev, V.; Pavlov, V.

    2016-12-01

    A concept of a highly-efficient high-power magnetron transmitter allowing wide-band phase and the mid-frequency power control at the frequency of the locking signal is proposed. The proposal is aimed for powering Superconducting RF (SRF) cavities of intensity-frontier accelerators. The transmitter is intended to operate with phase and amplitude control feedback loops allowing suppression of microphonics and beam loading in the SRF cavities. The concept utilizes injection-locked magnetrons controlled in phase by the locking signal supplied by a feedback system. The injection-locking signal pre-excites the magnetron and allows its operation below the critical voltage in free run. This realizes control of the magnetron power in an extended range (up to 10 dB) by control of the magnetron current. Experimental studies were carried out with 2.45 GHz, 1 kW, CW magnetrons. They demonstrated stable operation of the magnetrons and the required range of power control at a low noise level. An analysis of the kinetics of the drifting charge within the framework of the presented model of phase focusing in magnetrons substantiates the concept and the experimental results.

  12. Low-temperature growth of low friction wear-resistant amorphous carbon nitride thin films by mid-frequency, high power impulse, and direct current magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Bakoglidis, Konstantinos D., E-mail: konba@ifm.liu.se; Schmidt, Susann; Garbrecht, Magnus; Ivanov, Ivan G.; Jensen, Jens; Greczynski, Grzegorz; Hultman, Lars [Department of Physics, Chemistry and Biology (IFM), Linköping University, SE-581 83 Linköping (Sweden)

    2015-09-15

    The potential of different magnetron sputtering techniques for the synthesis of low friction and wear resistant amorphous carbon nitride (a-CN{sub x}) thin films onto temperature-sensitive AISI52100 bearing steel, but also Si(001) substrates was studied. Hence, a substrate temperature of 150 °C was chosen for the film synthesis. The a-CN{sub x} films were deposited using mid-frequency magnetron sputtering (MFMS) with an MF bias voltage, high power impulse magnetron sputtering (HiPIMS) with a synchronized HiPIMS bias voltage, and direct current magnetron sputtering (DCMS) with a DC bias voltage. The films were deposited using a N{sub 2}/Ar flow ratio of 0.16 at the total pressure of 400 mPa. The negative bias voltage, V{sub s}, was varied from 20 to 120 V in each of the three deposition modes. The microstructure of the films was characterized by high-resolution transmission electron microscopy and selected area electron diffraction, while the film morphology was investigated by scanning electron microscopy. All films possessed an amorphous microstructure, while the film morphology changed with the bias voltage. Layers grown applying the lowest substrate bias of 20 V exhibited pronounced intercolumnar porosity, independent of the sputter technique. Voids closed and dense films are formed at V{sub s} ≥ 60 V, V{sub s} ≥ 100 V, and V{sub s} = 120 V for MFMS, DCMS, and HiPIMS, respectively. X-ray photoelectron spectroscopy revealed that the nitrogen-to-carbon ratio, N/C, of the films ranged between 0.2 and 0.24. Elastic recoil detection analysis showed that Ar content varied between 0 and 0.8 at. % and increased as a function of V{sub s} for all deposition techniques. All films exhibited compressive residual stress, σ, which depends on the growth method; HiPIMS produces the least stressed films with values ranging between −0.4 and −1.2 GPa for all V{sub s}, while CN{sub x} films deposited by MFMS showed residual stresses up to −4.2

  13. Evolution of enhanced crystallinity and mechanical property of nanocomposite Ti-Si-N thin films using magnetron reactive co-sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Chung, C.K., E-mail: ckchung@mail.ncku.edu.tw [Department of Mechanical Engineering, Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 701, Taiwan (China); Chang, H.C.; Chang, S.C.; Liao, M.W. [Department of Mechanical Engineering, Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 701, Taiwan (China)

    2012-10-05

    Highlights: Black-Right-Pointing-Pointer The TiN-related hard coatings encounter poor high-temperature oxidation resistance problem. Black-Right-Pointing-Pointer The transition metal-Si-N nanocomposites have used for enhancing hard coating applications. Black-Right-Pointing-Pointer The effect of process parameters on Ti-Si-N microstructure and property was studied. Black-Right-Pointing-Pointer The orientation model for texture development of TiSiN is used for deeper discussing. Black-Right-Pointing-Pointer Both Ti-Si-N microstructure and texture are crucial factors for hardness enhancement. - Abstract: Nanocomposite Ti-Si-N thin films (nc-TiN/a-SiN{sub x} or nc-TiN/a-TiSi{sub x}N{sub y}) were deposited on Si(1 0 0) substrates from pure Ti and Si targets by magnetron reactive co-sputtering with a negative bias of -150 V. The effects of N{sub 2} flow ratio (FN{sub 2}% = FN{sub 2}/(FAr + FN{sub 2}) Multiplication-Sign 100%) and Ti power on the evolution of enhanced crystallinity and mechanical properties of Ti-Si-N have been investigated. The crystallinity, morphology, microstructure, elemental composition and mechanical properties of films were characterized by grazing incidence X-ray diffraction (GIXRD), scanning electron microscopy, energy dispersive spectroscopy and nanoindentation, respectively. When both Ti and Si target powers were fixed at 100 W, the GIXRD pattern of Ti-Si-N at 3 FN{sub 2}% exhibited a broad peak corresponding to quasi-amorphous microstructure with nanocrystalline grains embedded in an amorphous matrix. Then Ti-Si-N films showed high amount of crystallization with multiple diffraction peaks at 5 FN{sub 2}%, but the reduced peak intensity formed at 7 FN{sub 2}% and even to be amorphous films without any peak at high 10-20 FN{sub 2}%. The measured mean hardnesses of Ti-Si-N films formed at 3, 5, 7, 10 and 20 FN{sub 2}% were 18.1, 21.5, 20.4, 17.8 and 15.7 GPa, respectively. Based on the high-hardness Ti-Si-N at constant 5 FN{sub 2}%, changing Ti

  14. Studies on the reactive deposition of TiN{sub x} and TiO{sub x} in a DC magnetron plasma; Untersuchungen zur reaktiven Abscheidung von TiN{sub x} und TiO{sub x} in einem DC-Magnetronplasma

    Energy Technology Data Exchange (ETDEWEB)

    Wrehde, Stefan

    2009-10-30

    In the present thesis experiments in a magnetron coating plasma on the (reactive) deposition of Ti, Ti{sub x}, and TiO{sub x} layers were performed. The aim was to meet by correlation of measurements of the ion and energy current on the substrate during the coating procedure with studies of the properties of the deposed layers statements about the connections of deposition conditions and layer properties. The layers deposed in the argon plasma without reactive gas contained beside titanium as main component also small concentrations of oxygen in the range of 8..15%, no completely pure respectively metallic titanium layers could be deposed. In the layers deposed in the argon-nitrogen plasma the increasing nitrogen admixture to the plasma leads mto an increasing nitridation of the layers. The measurements of the crystal structure show higher macroscopical stresses in the layers deposed in the unbalanced mode. From the combination of the higher thicknesses and densities of the layers deposed in the unbalanced mode in this operation mode of the magnetron higher deposition rates result. In the argon-oxygen plasma at increasing oxygen part it comes to a distinct increasement of the oxygen concentration at simultaneous decreasement of the relative titanium concentration in the deposed layers. The deposition in the unbalanced mode leads against the that in the balanced mode to a slightly lower oxygen concentration in the layers. The measurements of the crystal structure show also a lower oxygen insertion and tendentially lower macroscopical stresses in the layers deposed in the unbalanced mode. The measured densities of the layers deposed in the unbalanced mode are distinctly lower than to be expected, and above all smaller than those of the layers deposed in the balanced mode.

  15. Influence of the electrical power applied to the target on the optical and structural properties of ZrON films produced via RF magnetron sputtering in a reactive atmosphere

    Energy Technology Data Exchange (ETDEWEB)

    Pinzón, M.J. [Grupo de Ciencia de Materiales y Superficies, Departamento de Física, Universidad Nacional de Colombia, AA 14490 Bogotá (Colombia); Alfonso, J.E., E-mail: jealfonsoo@unal.edu.co [Grupo de Ciencia de Materiales y Superficies, Departamento de Física, Universidad Nacional de Colombia, AA 14490 Bogotá (Colombia); Olaya, J.J. [Grupo de Ciencia de Materiales y Superficies, Departamento de Física, Universidad Nacional de Colombia, AA 14490 Bogotá (Colombia); Cubillos, G.I.; Romero, E. [Grupo de Materiales y Procesos Químicos, Universidad Nacional de Colombia, AA 14490 Bogotá (Colombia)

    2014-12-01

    The influence of the variation of electrical power applied to the target on the morphology and optical properties of zirconium oxynitride - zirconium oxide (ZrON) films deposited via RF magnetron sputtering on common glass substrates in a reactive atmosphere of N{sub 2}/O{sub 2}, with a flow ratio ΦN{sub 2}/ΦO{sub 2} of 1.25 was investigated. The crystallographic structure of the films was established through X-ray diffraction (XRD), the morphology was evaluated through scanning electron microscopy (SEM) and atomic force microscopy (AFM), and the optical behavior was evaluated through transmittance measurements. The XRD analysis showed that the films grew with mixed crystalline structures: monoclinic (ZrO{sub 2}) and body-centered cubic (Zr{sub 2}ON{sub 2}). SEM analysis showed that the films grew with a homogeneous morphology, and AFM results established that as the electrical power applied to the target increased, there were changes in the grain size and the roughness of the films. The thickness, refractive index, and absorption coefficient of the films were calculated using the values of the transmittance through the Swanepoel method. Additionally, the energy band gap was determined via analysis of the free interference region. - Highlights: • We growth zirconium oxynitride films by RF magnetron sputtering in reactive atmosphere. • We determine the influence of the electrical power applied at the target in optical and structural properties. • We determine the crystallite size, grain size and roughness of the zirconium oxynitride films. • We determine the optical parameters such refractive index of the zirconium oxynitride films through Swanepoel method. • We calculated the absorption coefficient and optical band gap of the zirconium oxynitride films.

  16. REACTIVE CURRENT OF AN INDUCTION ELECTRIC DRIVES WITH THYRISTOR VOLTAGE REGULATOR

    Directory of Open Access Journals (Sweden)

    J.V. Kovalova

    2014-12-01

    Full Text Available A model for a separation of reactive constituent from current of idling of an induction motor at its feed from a thyristor voltage regulator in the dependences on the control angle of thyristors is developed. As a result of modeling, dependence of relative reactive current which is approximated by formula for calculation of effective current of reactive constituent of nonsinusoidal current is obtained.

  17. Structural, chemical and nanomechanical investigations of SiC/polymeric a-C:H films deposited by reactive RF unbalanced magnetron sputtering

    Science.gov (United States)

    Tomastik, C.; Lackner, J. M.; Pauschitz, A.; Roy, M.

    2016-03-01

    Amorphous carbon (or diamond-like carbon, DLC) films have shown a number of important properties usable for a wide range of applications for very thin coatings with low friction and good wear resistance. DLC films alloyed with (semi-)metals show some improved properties and can be deposited by various methods. Among those, the widely used magnetron sputtering of carbon targets is known to increase the number of defects in the films. Therefore, in this paper an alternative approach of depositing silicon-carbide-containing polymeric hydrogenated DLC films using unbalanced magnetron sputtering was investigated. The influence of the C2H2 precursor concentration in the deposition chamber on the chemical and structural properties of the deposited films was investigated by Raman spectroscopy, X-ray photoelectron spectroscopy and elastic recoil detection analysis. Roughness, mechanical properties and scratch response of the films were evaluated with the help of atomic force microscopy and nanoindentation. The Raman spectra revealed a strong correlation of the film structure with the C2H2 concentration during deposition. A higher C2H2 flow rate results in an increase in SiC content and decrease in hydrogen content in the film. This in turn increases hardness and elastic modulus and decreases the ratio H/E and H3/E2. The highest scratch resistance is exhibited by the film with the highest hardness, and the film having the highest overall sp3 bond content shows the highest elastic recovery during scratching.

  18. The n-type conduction of indium-doped Cu{sub 2}O thin films fabricated by direct current magnetron co-sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Cai, Xing-Min; Su, Xiao-Qiang; Ye, Fan, E-mail: yefan@szu.edu.cn; Wang, Huan; Tian, Xiao-Qing; Zhang, Dong-Ping; Fan, Ping; Luo, Jing-Ting; Zheng, Zhuang-Hao; Liang, Guang-Xing [Institute of Thin Film Physics and Applications, School of Physical Science and Technology and Shenzhen Key Laboratory of Sensor Technology, Shenzhen University, Shenzhen 518060 (China); Roy, V. A. L. [Center of Super-Diamond and Advanced Films (COSDAF) and Department of Physics and Materials Science, City University of Hong Kong, Kowloon Tong, Hong Kong (China)

    2015-08-24

    Indium-doped Cu{sub 2}O thin films were fabricated on K9 glass substrates by direct current magnetron co-sputtering in an atmosphere of Ar and O{sub 2}. Metallic copper and indium disks were used as the targets. X-ray diffraction showed that the diffraction peaks could only be indexed to simple cubic Cu{sub 2}O, with no other phases detected. Indium atoms exist as In{sup 3+} in Cu{sub 2}O. Ultraviolet-visible spectroscopy showed that the transmittance of the samples was relatively high and that indium doping increased the optical band gaps. The Hall effect measurement showed that the samples were n-type semiconductors at room temperature. The Seebeck effect test showed that the films were n-type semiconductors near or over room temperature (<400 K), changing to p-type at relatively high temperatures. The conduction by the samples in the temperature range of the n-type was due to thermal band conduction and the donor energy level was estimated to be 620.2–713.8 meV below the conduction band. The theoretical calculation showed that indium doping can raise the Fermi energy level of Cu{sub 2}O and, therefore, lead to n-type conduction.

  19. De virtuele magnetron

    NARCIS (Netherlands)

    Luitjes, H.; Vollebregt, M.; Canters, R.

    2004-01-01

    De virtuele magnetron is computersoftware die de magentron nabootst. De virutele magnetron vereenvoudigt het ontwerpen van verpakkingen voor magnetronmaaltijden en is een hulpmiddel om het opwarmen van de diverse maaltijdcomponenten zodanig te verbeteren dat er minder koude en warme plaatsen in het

  20. De virtuele magnetron

    NARCIS (Netherlands)

    Luitjes, H.; Vollebregt, M.; Canters, R.

    2004-01-01

    De virtuele magnetron is computersoftware die de magentron nabootst. De virutele magnetron vereenvoudigt het ontwerpen van verpakkingen voor magnetronmaaltijden en is een hulpmiddel om het opwarmen van de diverse maaltijdcomponenten zodanig te verbeteren dat er minder koude en warme plaatsen in het

  1. Structural investigation of direct current magnetron sputtered Ti/NiV/Ag layers on n{sup +}Si substrate

    Energy Technology Data Exchange (ETDEWEB)

    Resnik, D. [Laboratory of Microsensor Structures and Electronics, Faculty of Electrical Engineering, University of Ljubljana, Trzaska 25, Ljubljana 1000 (Slovenia)], E-mail: drago.resnik@fe.uni-lj.si; Kovac, J. [Jozef Stefan Institute, Jamova 36, Ljubljana 1000 (Slovenia); Vrtacnik, D.; Amon, S. [Laboratory of Microsensor Structures and Electronics, Faculty of Electrical Engineering, University of Ljubljana, Trzaska 25, Ljubljana 1000 (Slovenia)

    2008-09-01

    Direct current sputtered Ti/NiV/Ag thin film metallization scheme on n{sup +}Si substrate was studied to reveal the nature of interface structure and adhesion related mechanisms. Ti/NiV/Ag scheme is usually applied when solderable backside contact is required. When thermal annealing of this sputtered metallic stack is performed below 550 deg. C, delamination frequently occurs. By energy dispersive X-ray spectroscopy analysis the delaminating interface was found to be between Si and Ti layer. Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS) depth profile analyses through metallic stack/Si substrate on samples exhibiting poor adhesion showed that a very thin amorphous Ti-Si phase was grown at Ti/Si interface when annealed at 400 deg. C. The XPS analyses of peeled layer and the surface of remained Si substrate after adhesion failure show that the delamination occurs between Si-substrate and amorphous Ti-Si layer. No contamination at Ti/Si interface was found as a possible origin for adhesion degradation. AES depth profiling of samples having good adhesion and annealed at 550 deg. C, revealed the formation of Ti-silicide and Ni-silicide at metal layers/Si interface, which in combination with Ni-Ti compound formed above this interface promote the adhesion.

  2. Surface treatment of diamond-like carbon films by reactive Ar/CF{sub 4} high-power pulsed magnetron sputtering plasmas

    Energy Technology Data Exchange (ETDEWEB)

    Kimura, Takashi, E-mail: t-kimura@nitech.ac.jp [Graduate School of Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan); Nishimura, Ryotaro [Graduate School of Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan); Azuma, Kingo [Department of Electrical Engineering and Computer Sciences, University of Hyogo, 2167 Shosha, Himeji, Hyogo 671-2280 (Japan); Nakao, Setsuo; Sonoda, Tsutomu; Kusumori, Takeshi; Ozaki, Kimihiro [National Institute of Advanced Industrial Science and Technology (AIST) - Chubu, 2266-98 Anagahora, Moriyama, Nagoya 463-8560 (Japan)

    2015-12-15

    Surface modification of diamond-like carbon films deposited by a high-power pulsed magnetron sputtering (HPPMS) of Ar was carried out by a HPPMS of Ar/CF{sub 4} mixture, changing a CF{sub 4} fraction from 2.5% to 20%. The hardness of the modified films markedly decreased from about 13 to about 3.5 GPa with increasing CF{sub 4} fraction, whereas the water contact angle of the modified films increased from 68° to 109° owing to the increase in the CF{sub x} content on the film surface. C 1s spectra in X-ray photoelectron spectroscopy indicated that a graphitic structure of modified films was formed at CF{sub 4} fractions less than 5%, above which the modified films possessed a polymer-like structure. Influence of treatment time on the properties of the modified films was also investigated in the range of treatment time from 5 to 30 min. The properties of the modified films did not depend on the treatment time in the range of treatment time longer than 10 min, whereas the water contact angle was not sensitive to the treatment time at any treatment time.

  3. Effects of Power Density and Post Annealing Process on the Microstructure and Wettability of TiO2 Films Deposited by Mid-frequency Magnetron Reactive Sputtering

    Institute of Scientific and Technical Information of China (English)

    Ying CUI; Hao DU; Jinquan XIAO; Lishi WEN

    2008-01-01

    The relationship of "preparation parameters-microstructures-wettability" of TiO2 films was reported. In this work, TiO2 films were deposited onto glass and silicon substrates by using mid-frequency dual magnetron sputtering technique at ambient temperature with various power densities and deposition time. After de- position, the films were heat treated at different annealing temperatures. X-ray diffraction (XRD), Raman spectroscopy, and field-emission scanning electron microscopy (FE-SEM) were utilized to characterize TiO2 films. The wettability of the films was evaluated by water contact angle measurement. The phase transition temperature of TiO2 films depended on the power density. It was demonstrated that wettability was strongly structure dependent and the film with the thickness of 610 nm (the power density was 2.22 W/cm2) showed the lowest contact angle (8°). It can be concluded that smaller crystallite size, the rutile phase with (110) face being parallel to the surface, and tensile stress favored the hydrophilicity of the TiO2 films.

  4. Magnetron sputtering source

    Science.gov (United States)

    Makowiecki, Daniel M.; McKernan, Mark A.; Grabner, R. Fred; Ramsey, Philip B.

    1994-01-01

    A magnetron sputtering source for sputtering coating substrates includes a high thermal conductivity electrically insulating ceramic and magnetically attached sputter target which can eliminate vacuum sealing and direct fluid cooling of the cathode assembly. The magnetron sputtering source design results in greater compactness, improved operating characteristics, greater versatility, and low fabrication cost. The design easily retrofits most sputtering apparatuses and provides for safe, easy, and cost effective target replacement, installation, and removal.

  5. Structure and electronic properties of AlCrO{sub x}N{sub 1−x} thin films deposited by reactive magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Najafi, H.; Karimi, A. [Institute of Condensed Matter Physics (ICMP), Swiss Federal Institute of Technology Lausanne (EPFL), CH-1015 Lausanne (Switzerland); Oveisi, E. [Electron Spectrometry and Microscopy Laboratory (LSME-ICMP), Swiss Federal Institute of Technology in Lausanne (EPFL), CH-1015 Lausanne (Switzerland); Morstein, M. [PLATIT AG, Advanced Coating Systems, CH-2545 Selzach (Switzerland)

    2014-12-01

    In this study, the main attempt is devoted to investigating the microstructure and electronic properties of AlCrO{sub x}N{sub 1−x} films in a wide range of oxygen concentrations from 0 to 1. These oxynitride films were deposited by pulsed DC magnetron sputtering from Al{sub 55}Cr{sub 45} targets. Our results showed that films with x = O/(O + N) < 0.6, exhibit a cubic (B1) lattice with a well-developed columnar structure. The incorporation of oxygen into the films without any oxide segregation results in the formation of a substitutional AlCrO{sub x}N{sub 1−x} solid solution and material system behaves like nitrides electronically. In the range of oxygen contents from 0.6 ≤ O/(O + N) < 0.97, coatings with fine columns, diffuse boundaries and high values of metal vacancies were formed. However, the B1 lattice survived despite the large proportion of oxygen. According to the structural and electronic properties of the corresponding layers, we assign this region to the formation of an amorphous phase and metastable monoxides with a B1 structure. Coatings with O/(O + N) ≥ 0.97 are electronically assigned to a solid solution of α-(Al,Cr){sub 2}(O{sub 0.97},N{sub 0.03}){sub 3} with corundum lattice and finer columnar structure. - Highlights: • AlCr(O{sub x}N{sub 1−x}) layers with variable oxygen content 0 < x < 1 were grown. • The layers with the lowest oxygen content, x < 0.6, electronically behave like nitrides. • Coatings with 0.6 ≤ x < 0.97 are assigned to metastable monoxides. • The oxide region consisted of a solid solution of α-phase with a corundum structure.

  6. Effect of Several New and Currently Available Oxime Cholinesterase Reactivators on Tabun-intoxicated Rats

    Directory of Open Access Journals (Sweden)

    Jiri Kassa

    2008-11-01

    Full Text Available The therapeutical efficacies of eleven oxime-based acetylcholinesterase reactivators were compared in an in vivo (rat model study of treatment of intoxication caused by tabun. In this group there were some currently available oximes (obidoxime, trimedoxime and HI-6 and the rest were newly synthesized compounds. The best reactivation efficacy for acetylcholinesterase in blood (expressed as percent of reactivation among the currently available oximes was observed after administration of trimedoxime (16% and of the newly synthesized K127 (22432 (25%. The reactivation of butyrylcholinesterase in plasma was also studied; the best reactivators were trimedoxime, K117 (22435, and K127 (22432, with overall reactivation efficacies of approximately 30%. Partial protection of brain ChE against tabun inhibition was observed after administration of trimedoxime (acetylcholinesterase 20%; butyrylcholinesterase 30% and obidoxime (acetylcholinesterase 12%; butyrylcholinesterase 16%.

  7. The effect of Al content, substrate temperature and nitrogen flow rate on optical band gap and optical features of nanostructured TiAlN thin films prepared by reactive magnetron sputtering

    Science.gov (United States)

    Jalali, Reza; Parhizkar, Mojtaba; Bidadi, Hassan; Naghshara, Hamid; Hosseini, Seyd Reza; Jafari, Majid

    2016-11-01

    In the present work, TiAlN thin films were prepared by using a dual reactive magnetron sputtering system on fused quartz substrates kept at room temperature and 400 °C; keeping nitrogen flow at 0.51 and 2.78 sccm, various DC and RF powers and the effect of these factors have been studied on the optical properties of the layers. The optical properties including absorption and transmission were studied by a UV-Visible spectrophotometer in the wavelength region (200-1100) nm. By plotting ( αhν)2 and ( αhν)1/2 versus the photon energy hυ, the optical band gap was evaluated. Experimental results show that layers with high percentage of aluminum and nitrogen have higher gap with respect to layers having high titanium percentage. TiAlN thin films deposited with 2.78 sccm nitrogen flow rate possess optical direct band gap in the range of 3.8-5.1 eV and optical indirect band gap in the range of 1.1-3.4 eV. The variation of optical band gap of the films that deposited on the substrate with 400 °C and nitrogen flow rate of 2.78 sccm was different from other layers.

  8. Preparation and Characterization of TiO2/TiN/TiO2 Multi-layer Solar Control Coatings Deposited by D.C. Reactive Magnetron Sputtering at Different Substrate Temperature

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    Transparent TiO2/TiN/TiO2 multi-layer solar control coatings were prepared on normal soda-lime-silica float glass substrate by using d.c. reactive magnetron sputtering at substrate temperature ranging from room temperature to 620℃. The dependence of optical properties of the coatings and the coating composition, on the substrate temperature was studied. The results of the optical properties show that as the substrate temperature increases, a visible transmittance as high as 65% can be obtained. When the substrate temperature is higher than 570℃, the infrared reflectance decreases. The results of X-ray photoelectron spectroscopy (XPS) show that when the substrate temperature is higher than 520℃ in oxygen atmosphere, the formation of thin surface over-layers (TiNxOy) on top of the TiN films can be observed. When the substrate temperature is at 620℃, the oxynitride become TiO2, which results in the optical degradation of TiN layer in infrared reflectance.

  9. Active and reactive power control of a current-source PWM-rectifier using space vectors

    Energy Technology Data Exchange (ETDEWEB)

    Salo, M.; Tuusa, H. [Tampere University of Technology (Finland). Department of Electrical Engineering, Power Electronics

    1997-12-31

    In this paper the current-source PWM-rectifier with active and reactive power control is presented. The control system is realized using space vector methods. Also, compensation of the reactive power drawn by the line filter is discussed. Some simulation results are shown. (orig.) 8 refs.

  10. Electrical properties of magnetron sputtered ZnO:Al samples determined by Hall and Seebeck measurements

    Energy Technology Data Exchange (ETDEWEB)

    Dewald, Wilma; Sittinger, Volker; Szyszka, Bernd [Fraunhofer Institute for Surface Engineering and Thin Films (IST), Braunschweig (Germany); Wimmer, Mark; Ruske, Florian [Helmholtz-Zentrum Berlin fuer Materialien und Energie (HZB), Berlin (Germany)

    2010-07-01

    Transparent conductive oxides (TCOs) play a big role in display and photovoltaic technology. One of the most promising materials for photovoltaic applications is aluminum doped zinc oxide. The electrical properties of differently prepared ZnO:Al films will be analyzed in this paper. Carrier mobility and free carrier density are varying in a wide range depending on the preparation method and doping level. Reactive mid frequency magnetron sputtering of a metallic Zn:Al target, radio frequency and direct current magnetron sputtering of a ceramic ZnO:Al{sub 2}O{sub 3} target are considered as well as the post deposition annealing of samples, which increases mobility significantly. The carrier mobility in polycrystalline aluminum doped ZnO is limited by scattering at grain boundaries and at ionized impurities. With Hall and Seebeck measurements insight will be given in transport and scatter mechanisms for the different samples.

  11. Real-Time Method for Detecting Harmonic and Reactive Currents of Single-Phase Circuits

    Institute of Scientific and Technical Information of China (English)

    Zhang Xiufeng; Ding Juxia

    2006-01-01

    According to the characteristics of single-phase circuits and demand of using active filter for real-time detecting harmonic and reactive currents, a detecting method based on Fryze's power definition is proposed. The results of theoretical analysis and simulation show that the proposed method is effective in real-time detecting of instantaneous harmonic and reactive currents in single-phase circuits. When only detecting the total reactive currents, this method does not need a phase-locked loop circuit, and it also can be used in some special applications to provide different compensations on the ground of different requirements of electric network. Compared with the other methods based on the theory of instantaneous reactive power, this method is simple and easy to realize.

  12. A Hierarchical Control Scheme for Reactive Power and Harmonic Current Sharing in Islanded Microgrids

    DEFF Research Database (Denmark)

    Lorzadeh, Iman; Firoozabadi, Mehdi Savaghebi; Askarian Abyaneh, Hossein

    2015-01-01

    of each inverter output current are extracted at primary level and transmitted to the secondary controller. Then, instantaneous circulating currents at different frequencies are calculated and applied by the secondary level to generate proper control signals for accurate reactive power and harmonic......In this paper, a hierarchical control scheme consisting of primary and secondary levels is proposed for achieving accurate reactive power and harmonic currents sharing among interface inverters of distributed generators (DGs) in islanded microgrids. Firstly, fundamental and main harmonic components...... current sharing among the inverters. Consequently, these signals are sent to the primary level and inserted as voltage references after passing the control blocks. In contrast to the conventional virtual impedance schemes, where reactive power and harmonic current sharing are realized at the expense...

  13. Mechanical, tribological, and electrochemical behavior of Cr{sub 1-x}Al{sub x}N coatings deposited by r.f. reactive magnetron co-sputtering method

    Energy Technology Data Exchange (ETDEWEB)

    Sanchez, J.E.; Sanchez, O.M. [Thin Films Group, Universidad del Valle, Cali (Colombia); Ipaz, L., E-mail: leoipazc@calima.univalle.edu.co [Thin Films Group, Universidad del Valle, Cali (Colombia); Aperador, W. [Escuela Ingenieria Mecanica, Escuela Colombiana de Ingenieria, Bogota (Colombia); Caicedo, J.C. [Thin Films Group, Universidad del Valle, Cali (Colombia); Amaya, C. [CDT-ASTIN SENA, Hard Coatings Laboratory, Cali (Colombia); Landaverde, M.A. Hernandez; Beltran, F. Espinoza; Munoz-Saldana, J. [Centro de Investigacion y Estudios Avanzados del CINVESTAV-IPN, Queretaro (Mexico); Zambrano, G. [Thin Films Group, Universidad del Valle, Cali (Colombia)

    2010-02-01

    Chromium aluminum nitride (Cr{sub 1-x}Al{sub x}N) coatings were deposited onto AISI H13 steel and silicon substrates by r.f. reactive magnetron co-sputtering in (Ar/N{sub 2}) gas mixture from chromium and aluminum targets. Properties of deposited Cr{sub 1-x}Al{sub x}N coatings such as compositional, structural, morphological, electrochemical, mechanical and tribological, were investigated as functions of aluminum content. X-ray diffraction patterns of Cr{sub 1-x}Al{sub x}N coatings with different atomic concentrations of aluminum (0.51 < x < 0.69) showed the presence and evolution of (1 1 1), (2 0 0), and (1 0 2) crystallographic orientations associated to the Cr{sub 1-x}Al{sub x}N cubic and w-AlN phases, respectively. The rate of corrosion of the steel coated with Cr{sub 1-x}Al{sub x}N varied with the applied power; however, always being clearly lower when compared to the uncoated substrate. The behavior of the protective effect of the Cr{sub 1-x}Al{sub x}N coatings is based on the substitution of Cr for Al, when the power applied to the aluminum target increases. The mechanical properties were also sensitive to the power applied, leading to a maximum in hardness and a reduced elastic modulus of 30 and 303 GPa at 350 W and a monotonic decrease to 11 and 212 GPa at 450 W, respectively. Finally, the friction coefficient measured by pin-on disk revealed values between 0.45 and 0.70 in humid atmosphere.

  14. Harmonic and reactive behavior of the quasiparticle tunnel current in SIS junctions

    Science.gov (United States)

    Rashid, H.; Desmaris, V.; Pavolotsky, A.; Belitsky, V.

    2016-04-01

    In this paper, we show theoretically and experimentally that the reactive quasiparticle tunnel current of the superconductor tunnel junction could be directly measured at specific bias voltages for the higher harmonics of the quasiparticle tunnel current. We used the theory of quasiparticle tunneling to study the higher harmonics of the quasiparticle tunnel current in superconducting tunnel junction in the presence of rf irradiation. The impact of the reactive current on the harmonic behavior of the quasiparticle tunnel current was carefully studied by implementing a practical model with four parameters to model the dc I-V characteristics of the superconducting tunnel junction. The measured reactive current at the specific bias voltage is in good agreement with our theoretically calculated reactive current through the Kramers-Kronig transform. This study also shows that there is an excellent correspondence between the behavior of the predicted higher harmonics using the previously established theory of quasiparticle tunnel current in superconducting tunnel junctions by J.R. Tucker and M.J. Feldman and the measurements presented in this paper.

  15. Harmonic and reactive behavior of the quasiparticle tunnel current in SIS junctions

    Directory of Open Access Journals (Sweden)

    H. Rashid

    2016-04-01

    Full Text Available In this paper, we show theoretically and experimentally that the reactive quasiparticle tunnel current of the superconductor tunnel junction could be directly measured at specific bias voltages for the higher harmonics of the quasiparticle tunnel current. We used the theory of quasiparticle tunneling to study the higher harmonics of the quasiparticle tunnel current in superconducting tunnel junction in the presence of rf irradiation. The impact of the reactive current on the harmonic behavior of the quasiparticle tunnel current was carefully studied by implementing a practical model with four parameters to model the dc I-V characteristics of the superconducting tunnel junction. The measured reactive current at the specific bias voltage is in good agreement with our theoretically calculated reactive current through the Kramers-Kronig transform. This study also shows that there is an excellent correspondence between the behavior of the predicted higher harmonics using the previously established theory of quasiparticle tunnel current in superconducting tunnel junctions by J.R. Tucker and M.J. Feldman and the measurements presented in this paper.

  16. Reactive sputter deposition

    CERN Document Server

    Mahieu, Stijn

    2008-01-01

    In this valuable work, all aspects of the reactive magnetron sputtering process, from the discharge up to the resulting thin film growth, are described in detail, allowing the reader to understand the complete process. Hence, this book gives necessary information for those who want to start with reactive magnetron sputtering, understand and investigate the technique, control their sputtering process and tune their existing process, obtaining the desired thin films.

  17. Studies on the reactive pulsed-magnetron sputtering of ITO from metallic targets; Untersuchungen zum reaktiven Pulsmagnetronsputtern von ITO von metallischen Targets

    Energy Technology Data Exchange (ETDEWEB)

    Gnehr, W.M.

    2006-06-15

    The thesis deals with a reactive sputter process for the deposition of ITO- films. In contrast to the usual technique, the sputter targets consists of indium-tin-alloy instead of ceramic ITO. All experiments were conducted on an inline coater with 600 mm target-width. The process is stabilized by a control loop based on optical emission detection. The experiments prove, that this control loop guarantees a long term stability of the outcomes of the coating process.Process parameters, that are crucial for the optical and electrical properties of the deposited thin films are identified and studied. Among them are the flow of oxygen and the substrate temperature but also less obvious parameters such as the distance between target and substrate.Througout the work the focus is on the film deposition with pulsed plasmas. Novel bipolar DC pulse- and pulse package generators are employed for the deposition.In order to shed some light onto the influence of certain pulse parameters on the outcome of a particular coating process, a Monte-Carlo-Simulation of the particle flow in pulsed plasmas is developed. This simulation yields the distribution of particles and their respective energies on deliberately placed planes in the process chamber. Particles under investigation are both sputtered species and neutral sputter gas atoms reflected at the target. The results of this simulation provide an explanation for the influence of certain pulse parameters on the outcome of the coating process. The further investigations deal with the influence of the construction of the process chamber on the coating process. For this purpose, locally resolved optical spectra are recorded. In order to analyse these spectra, a novel connected fit algorithm is developed.This algorithm yields the distribution of certain fitparameters on the substrate. Provided the most complex of the discussed parametrizations of the dielectric function are used, these can be crucial properties such as the carrier

  18. Current trends in management of hepatitis B virus reactivation in the biologic therapy era

    Institute of Scientific and Technical Information of China (English)

    Claudio M Mastroianni; Miriam Lichtner; Rita Citton; Cosmo Del Borgo; Angela Rago; Helene Martini; Giuseppe Cimino; Vincenzo Vullo

    2011-01-01

    Hepatitis B virus (HBV) reactivation represents an emerging cause of liver disease in patients undergoing treatment with biologic agents. In particular, the risk of HBV reactivation is heightened by the use monoclonal antibodies, such as rituximab (anti-CD20) and alemtuzumab (anti-CD52) that cause profound and long-lasting immunosuppression. Emerging data indicate that HBV reactivation could also develop following the use of other biologic agents, such as tumor necrosis factor (TNF)-α inhibitors. When HBV reactivation is diagnosed, it is mandatory to suspend biologic treatment and start antiviral agents immediately. However, pre-emptive antiviral therapy prior to monoclonal antibody administration is crucial in preventing HBV reactivation and its clinical consequences. Several lines of evidence have shown that risk of HBV reactivation is greatly reduced by the identification of high-risk patients and the use of prophylactic antiviral therapy. In this article, we discuss current trends in the management of HBV reactivation in immunosuppressed patients receiving biologic therapy, such as rituximab, alemtuzumab and TNF-α antagonists.

  19. Characterization of DC magnetron sputtering deposited thin films of TiN for SBN/MgO/TiN/Si structural waveguide

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    Optimal parameters for depositing Titanium nitride (TiN) thin films by DC reactive magnetron sputtering were determined. TiN thin films were deposited on Si (100) substrates by DC reactive magnetron sputtering, at different temperatures,different electrical current values, and different N2/Ar ratios. Structural characteristics of TiN thin films were measured by X-ray diffraction (XRD); surface morphology of the thin films was characterized using an atomic force microscope (AFM). The electric resistivity of the TiN films was measured by a four-point probe. In the result, temperature is 500 ℃, electrical current value is 1.6 A, pure N2 is the reacting gas, TiN thin film has the preferred (200) orientation, resistance is small enough for its use as bottom electrodes.

  20. Theory of the magnetronic laser

    CERN Document Server

    Pardy, M

    2003-01-01

    We determine the total power of radiation of electron moving in the planar magnetron fields and the power spectrum generated by a single electron and by a system of N electrons moving coherently in the planar magnetron. We argue that for large N and high intensity of electric and magnetic fields, the power of radiation of such magnetronic laser, MAL, can be sufficient for application in the physical, chemical, biological and medicine sciences. In medicine, the magnetronic laser, can be used for the therapy of the localized cancer tumors. The application of MAL in CERN as an ion source for LHC is not excluded.

  1. Pulsing frequency induced change in optical constants and dispersion energy parameters of WO{sub 3} films grown by pulsed direct current magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Punitha, K. [Department of Physics, Alagappa University, Karaikudi 630 004 (India); Sivakumar, R., E-mail: krsivakumar1979@yahoo.com [Directorate of Distance Education, Alagappa University, Karaikudi 630 004 (India); Sanjeeviraja, C. [Department of Physics, Alagappa Chettiar College of Engineering and Technology, Karaikudi 630 004 (India)

    2014-03-21

    In this work, we present the pulsing frequency induced change in the structural, optical, vibrational, and luminescence properties of tungsten oxide (WO{sub 3}) thin films deposited on microscopic glass and fluorine doped tin oxide (SnO{sub 2}:F) coated glass substrates by pulsed dc magnetron sputtering technique. The WO{sub 3} films deposited on SnO{sub 2}:F substrate belongs to monoclinic phase. The pulsing frequency has a significant influence on the preferred orientation and crystallinity of WO{sub 3} film. The maximum optical transmittance of 85% was observed for the film and the slight shift in transmission threshold towards higher wavelength region with increasing pulsing frequency revealed the systematic reduction in optical energy band gap (3.78 to 3.13 eV) of the films. The refractive index (n) of films are found to decrease (1.832 to 1.333 at 550 nm) with increasing pulsing frequency and the average value of extinction coefficient (k) is in the order of 10{sup −3}. It was observed that the dispersion data obeyed the single oscillator of the Wemple-Didomenico model, from which the dispersion energy (E{sub d}) parameters, dielectric constants, plasma frequency, oscillator strength, and oscillator energy (E{sub o}) of WO{sub 3} films were calculated and reported for the first time due to variation in pulsing frequency during deposition by pulsed dc magnetron sputtering. The E{sub o} is change between 6.30 and 3.88 eV, while the E{sub d} varies from 25.81 to 7.88 eV, with pulsing frequency. The Raman peak observed at 1095 cm{sup −1} attributes the presence of W-O symmetric stretching vibration. The slight shift in photoluminescence band is attributed to the difference in excitons transition. We have made an attempt to discuss and correlate these results with the light of possible mechanisms underlying the phenomena.

  2. Influence of O2 Flux on Compositions and Properties of ITO Films Deposited at Room Temperature by Direct-Current Pulse Magnetron Sputtering

    Institute of Scientific and Technical Information of China (English)

    WANG Hua-Lin; DING Wan-Yu; LIU Chao-Qian; CHAI Wei-Ping

    2010-01-01

    @@ Indium tin oxide(ITO)films were deposited on glass substrates at room temperature by dc pulse magnetron sputtering.Varying O2 flux,ITO films with different properties are obtained.Both x-ray diffractometer and x-ray photoelectron spectrometer are used to study the change of crystalline structures and bonding structures of ITO films,respectively.Electrical properties are measured by four-point probe measurements.The results indicate that the chemical structures and compositions of ITO films strongly depend on the O2 flux.With increasing O2flux,ITO films display better crystallization,which could decrease the resistivity of films.On the contrary,ITO films contain less O vacancies with increasing O2 flux,which could worsen the conductive properties of films.Without any heat treatment onto the samples,the resistivity of the ITO film could reach 6.0 × 10-4Ω·cm,with the optimai deposition parameter of 0.2 sccm O2 flux.

  3. ELECTRICAL PROPERTIES OF DC REACTIVE MAGNETRON ...

    African Journals Online (AJOL)

    Mgina

    Films optical spectra were fitted with the Drude model to determine their charge carrier ... The use of aluminium doped zinc oxide ... They sputtered ZnO and Al2O3 .... Figure 1(c): The simulated and measured spectrum for the composite film ...

  4. Oleophobic optical coating deposited by magnetron PVD

    Science.gov (United States)

    Bernt, D.; Ponomarenko, V.; Pisarev, A.

    2016-09-01

    Thin oxinitride films of Zn-Sn-O-N and Si-Al-O-N were deposited on glass by reactive magnetron sputtering at various nitrogen-to-oxygen ratios. Nitrogen added to oxygen led to decrease of the surface roughness and increase of oleophobic properties studied by the oil-drop test. The best oleophobity was obtained for Zn-Sn-O-N oxinitride at Zn:Sn=1:1 and N:O=1:2. Improved oleophobic properties were also demonstrated if the oxinitride film was deposited on top of the multilayer coating as the final step in the industrial cycle of production of energy efficient glass.

  5. Physiological Reactivity to Psychological Stress in Human Pregnancy: Current Knowledge and Future Directions

    Science.gov (United States)

    Christian, Lisa M.

    2012-01-01

    Cardiovascular and neuroendocrine reactivity to acute stress are important predictors of health outcomes in non-pregnant populations. Greater magnitude and duration of physiological responses have been associated with increased risk of hypertensive disorders and diabetes, greater susceptibility to infectious illnesses, suppression of cell-mediated immunity as well as risk for depression and anxiety disorders. Stress reactivity during pregnancy has unique implications for maternal health, birth outcomes, and fetal development. However, as compared to the larger literature, our understanding of the predictors and consequences of exaggerated stress reactivity in pregnancy is limited. This paper reviews the current state of this literature with an emphasis on gaps in knowledge and future directions. PMID:22800930

  6. 基底温度对反应磁控溅射氮化铝薄膜的影响%Effects of Substrate Temperature on Aluminum Nitride Films by Reactively Magnetron Sputtering

    Institute of Scientific and Technical Information of China (English)

    黄美东; 张琳琳; 王丽格; 佟莉娜; 李晓娜; 董闯

    2011-01-01

    采用反应磁控溅射法结合加热控温电源,在光学玻璃基底上制备氮化铝(AlN)薄膜,通过X射线衍射(XRD)技术对薄膜样品物相结构进行分析,利用纳米压痕仪测试薄膜样品的硬度及弹性模量,用椭圆偏振仪及光栅光谱仪测试了薄膜样品的光学性能,分析和研究了基底温度对AlN薄膜的结构及性能的影响.结果表明,用此方法获得的AlN薄膜呈晶态,属于六方晶系,温度对AlN(100)面衍射峰强度影响不大,但对(110)面衍射峰的影响较大,因而温度对AlN的择优取向有一定影响.AlN(100)峰半高宽随温度升高而减小,表明晶粒尺寸随温度升高有变大趋势.随沉积温度升高,薄膜硬度从150℃的8 GPa增加到350℃的10 GPa左右,随基底温度升高,薄膜的硬度增加.弹性模量随温度的变化趋势与硬度的基本一致.在可见光区域AlN薄膜透过率超过90%,基本属于透明膜.基底温度对薄膜折射率也有较明显影响,折射率大致随温度升高而增大,但由椭偏测试及透射谱线分析得到的厚度结果表明,随温度升高,AlN薄膜的沉积速率下降.%Aluminum nitride ( A1N) thin films were reactively deposited onto glass substrates using reactive magnetron sputtering with a temperature-controllable heater. Hie phase and structure of the films were analyzed using X-ray diffraction (XRD). Nano-indenter and ellipsometer as well as grating spectrograph were employed to characterize hardness, elastic module, and optical properties of the films. The effects of substrate temperature on the structure and properties of the A1N films were intensely analyzed and studied. Hie results showed that the A1N films fabricated by this method were crystalline with a hexagonal structure. Hie deposition temperature influenced the preferred orientation of the films. It seemed that the plane (110) of A1N was more sensitive to temperature than the plane (100). The full width of half maximum (FWHM) of peak (100

  7. Investigation of Structural, Compositional and Anti-Microbial Properties of Copper Thin Film Using Direct Current Magnetron Sputtering for Surgical Instruments

    Science.gov (United States)

    Kalaiselvam, S.; Sandhya, J.; Krishnan, K. V. Hari; Kedharnath, A.; Arulkumar, G.; Roseline, A. Ameelia

    Surgical instruments and other bioimplant devices, owing to their importance in the biomedical industry require high biocompatibility to be used in the human body. Nevertheless, issues of compatibility, bacterial infections are quite common in such devices. Hence development of surface coatings on various substrates for implant applications is a promising technique to combat the issues arising in these implant materials. The present investigation aims at coating copper on stainless steel substrate using DC Magnetron sputtering which is used to achieve film of required thickness (0.5-8μm). The deposition pressure, substrate temperature, power supply, distance between the specimen and target are optimized and maintained constant, while the sputtering time (30-110min) is varied. The sputtered copper thin film’s morphology, composition are characterized by SEM and EDAX. X-ray diffraction analysis shows copper oriented on (111) and (002) and copper oxide on (111) planes. The contact angle of copper thin film is 92∘ while AISI 316L shows 73∘. The antimicrobial studies carried in Staphylococcus aureus, Escherichia Coli, Klebsiella pneumonia and Candida albicans show that the maximum reduction was seen upto 35, 26, 54, 39CFU/mL, respectively after 24h. The cell viability is studied by MTT assay test on Vero cell line for 24h, 48h and 72h and average cell viability is 43.85%. The copper release from the thin film to the culture medium is 6691μg/L (maximum) is estimated from AAS studies. The copper coated substrate does not show much reaction with living Vero cells whereas the bacteria and fungi are found to be destroyed.

  8. Development of wide range current signal data acquisition system for reactivity meter using Keithley electrometers

    Energy Technology Data Exchange (ETDEWEB)

    Jeong, S. H.; Kim, H. K.; Chio, Y. S.; Kim, M. J.; Woo, J. S. [KAERI, Taejon (Korea, Republic of)

    2001-05-01

    The reactivity worth of control rods is measured to ensure safety every refueling phase in HANARO, the research reactor in KAERI. Two compensated ion chambers are installed around the outer core to measure the reactor power. The signals from CICs enter the reactivity computer system. The reactivity computer system operated on MS-DOS was developed during the commissioning phase. But it is not so user-friendly, is so outdated and difficult to aquire spare parts. Hence we decided to upgrade the system to utilize MS-Windows {sup TM} operating system and object oriented visual program language. This paper describes the data acquisition system developed for the new reactivity computer system operated on MS-Windows{sup TM} operating system. This data acquisition system uses electrometers for converting low current signal to voltage and measures the current signal accurately even though the electrometer change the range of the output automatically. We verified that the system was stable and acquired the input signals accurately.

  9. Analysis on the ionization of high power pulsed unbalanced magnetron sputtering powered by direct current%直流电源耦合高功率脉冲非平衡磁控溅射电离特性

    Institute of Scientific and Technical Information of China (English)

    牟宗信; 牟晓东; 王春; 贾莉; 董闯

    2011-01-01

    采用直流电源放电形成高功率脉冲非平衡磁控溅射(dc-high power impulse unbalanced magnetron sputtering,dc-HPPUMS或dc-HiPiUMS),利用雪崩放电的击穿机理形成深度自触发放电,同轴线圈和空心阴极控制放电特性和提高功率密度.磁阱俘获雪崩放电形成的二次电子和形成漂移电流,形成了大电流脉冲放电,放电脉冲电流密度峰值超过100 A/cm2,脉冲频率小于40 Hz.由于放电等离子体远没有达到平衡状态,放电电流主要受到空间电荷效应的限制,采用放电理论分析了形成高电离率和强脉冲电流的机理,采用蔡尔德定律计算的放电参数符合实验的结果.%High Power impulse Unbalanced Magnetron Sputtering has been coupled to a direct current source (dc-HPPUMS or dc-HiPUMS). A coaxial coil and an attached hollow cathode were applied to control discharge properties and improve pulsed power density. A large extent breakdown was induced for avalanche discharge mechanism. The magnetic trap on sputtering target traps the secondary electrons excited by the avalanche and forms a drift current in magnetic trap. The peak pulse current density is higher than 100 A/cm2 with a pulse frequency less than 40 Hz. The space charge limited condition controls the discharge for plasma far away from equilibrium. The discharge theory was taken to describe the high ionization mechanism in dc-HPPUMS discharge. The parameters deduced from Child law agree with the experimental results.

  10. Magnetron-Sputtered YSZ and CGO Electrolytes for SOFC

    Science.gov (United States)

    Solovyev, A. A.; Shipilova, A. V.; Ionov, I. V.; Kovalchuk, A. N.; Rabotkin, S. V.; Oskirko, V. O.

    2016-08-01

    Reactive magnetron sputtering has been used for deposition of yttria-stabilized ZrO2 (YSZ) and gadolinium-doped CeO2 (CGO) layers on NiO-YSZ commercial anodes for solid oxide fuel cells. To increase the deposition rate and improve the quality of the sputtered thin oxide films, asymmetric bipolar pulse magnetron sputtering was applied. Three types of anode-supported cells, with single-layer YSZ or CGO and YSZ/CGO bilayer electrolyte, were prepared and investigated. Optimal thickness of oxide layers was determined experimentally. Based on the electrochemical characteristics of the cells, it is shown that, at lower operating temperatures of 650°C to 700°C, the cells with single-layer CGO electrolyte are most effective. The power density of these fuel cells exceeds that of the cell based on YSZ single-layer electrolyte at the same temperature. Power densities of 650 mW cm-2 and 500 mW cm-2 at 700°C were demonstrated by cells with single-layer YSZ and CGO electrolyte, respectively. Significantly enhanced maximum power density was achieved in a bilayer-electrolyte single cell, as compared with cells with a single electrolyte layer. Maximum power density of 1.25 W cm-2 at 800°C and 1 W cm-2 at 750°C under voltage of 0.7 V were achieved for the YSZ/CGO bilayer electrolyte cell with YSZ and CGO thickness of about 4 μm and 1.5 μm, respectively. This signifies that the YSZ thin film serves as a blocking layer to prevent electrical current leakage in the CGO layer, leading to the overall enhanced performance. This performance is comparable to the state of the art for cells based on YSZ/CGO bilayer electrolyte.

  11. Deposition Rates of High Power Impulse Magnetron Sputtering: Physics and Economics

    Energy Technology Data Exchange (ETDEWEB)

    Anders, Andre

    2009-11-22

    Deposition by high power impulse magnetron sputtering (HIPIMS) is considered by some as the new paradigm of advanced sputtering technology, yet this is met with skepticism by others for the reported lower deposition rates, if compared to rates of more conventional sputtering of equal average power. In this contribution, the underlying physical reasons for the rate changes are discussed, including (i) ion return to the target and self-sputtering, (ii) the less-than-linear increase of the sputtering yield with increasing ion energy, (iii) yield changes due to the shift of species responsible for sputtering, (iv) changes to due to greater film density, limited sticking, and self-sputtering on the substrate, (v) noticeable power losses in the switch module, (vi) changes of the magnetic balance and particle confinement of the magnetron due to self-fields at high current, and (vii) superposition of sputtering and sublimation/evaporation for selected materials. The situation is even more complicated for reactive systems where the target surface chemistry is a function of the reactive gas partial pressure and discharge conditions. While most of these factors imply a reduction of the normalized deposition rate, increased rates have been reported for certain conditions using hot targets and less poisoned targets. Finally, some points of economics and HIPIMS benefits considered.

  12. Compensation for Harmonic Currents and Reactive Power in Wind Power Generation System using PWM Inverter

    Science.gov (United States)

    Shinohara, Katsuji; Shinhatsubo, Kurato; Iimori, Kenichi; Yamamoto, Kichiro; Saruban, Takamichi; Yamaemori, Takahiro

    In recent year, consciousness of environmental problems is enhancing, and the price of the electric power purchased by an electric power company is established expensive for the power plant utilizing the natural energy. So, the introduction of the wind power generation is promoted in Japan. Generally, squirrel-cage induction machines are widely used as a generator in wind power generation system because of its small size, lightweight and low-cost. However, the induction machines do not have a source of excitation. Thus, it causes the inrush currents and the instantaneous voltage drop when the generator is directly connected to a power grid. To reduce the inrush currents, an AC power regulator is used. Wind power generations are frequently connected to and disconnected from the power grid. However, when the inrush currents are reduced, harmonic currents are caused by phase control of the AC power regulator. And the phase control of AC power regulator cannot control the power factor. Therefore, we propose the use of the AC power regulator to compensate for the harmonic currents and reactive power in the wind power generation system, and demonstrate the validity of its system by simulated and experimental results.

  13. Magnetic and Optical Properties of the TiO2-Co-TiO2 Composite Films Grown by Magnetron Sputtering

    Institute of Scientific and Technical Information of China (English)

    LIU Fa-min; DING Peng; SHI Wei-mei; WANG Tian-min

    2007-01-01

    The TiO2-Co-TiO2 sandwich films were successfully grown on glass and silicon substrata making alternate use of radio frequency reactive magnetron sputtering and direct current magnetron sputtering. The structures and properties of these films were identified with X-ray diffraction (XRD), Raman spectra and X-ray photoemission spectra (XPS). It is shown that the sandwich film consists of two anatase TiO2 films with an embedded Co nano-film. The fact that, when the Co nano-film thickens, varied red shifts appear in optical absorption spectra may well be explained by the quantum confinement and tunnel effects. As for magnetic properties, the saturation magnetization, remnant magnetic induction and coercivity vary with the thickness of the Co nano-films. Moreover, the Co nano-film has a critical thickness of about 8.6 nm, which makes the coercivity of the composite film reach the maximum of about 1413 Oe.

  14. Combination of Reactive Current Droop Compensation and Line Drop Compensation for Improving Voltage Stability

    Institute of Scientific and Technical Information of China (English)

    TIAN Qing; LIN Xiang-ning

    2009-01-01

    Recent events related to power system failure have shown that voltage collapse can be a cause of widespread outages.The thrust of this paper is to discuss and establish means of mitigating system voltage instability by using a combination of both reactive current droop compensation and line drop compensation.It is shown that the point that the voltage regulator controls can be defined by a new method which is based on a widely accepted vohage stability analysis tool.This tool can be used to determine which generators will have an impact on the maximum permissible loading of a bus.Dynamic analysis was carried out on the CIGRE Nordic test system to study the impact of control point location on time to collapse and it is shown that the new scheme can improve the voltage stability.

  15. Management of hepatitis B reactivation in immunosuppressed patients: An update on current recommendations

    Institute of Scientific and Technical Information of China (English)

    Fernando; Bessone; Melisa; Dirchwolf

    2016-01-01

    The proportion of hepatitis B virus(HBV) previously exposed patients who receive immunosuppressive treatment is usually very small. However, if these individuals are exposed to potent immunosuppressive compounds, the risk of HBV reactivation(HBVr) increases with the presence of hepatitis B surface antigen(HBsAg) in the serum. Chronic HBsAg carriers have a higher risk than those who have a total IgG anticore as the only marker of resolved/occult HBV disease. The loss of immune control in these patients may results in the reactivation of HBV replication within hepatocytes. Upon reconstitution of the immune system, infected hepatocytes are once again targeted and damaged by immune surveillance in an effort to clear the virus. There are different virological scenarios, and a wide spectrum of associated drugs with specific and stratified risk for the development of HBVr. Some of this agents can trigger a severe degree of hepatocellular damage, including hepatitis, acute liver failure, and even death despite employment of effective antiviral therapies. Currently, HBVr incidence seems to be increasing around the world; a fact mainly related to the incessant appearance of more powerful immunosuppressive drugs launched to the market. Moreover, there is no consensus on the length of prophylactic treatment before the patients are treated with immunosuppressive therapy, and for how long this therapy should be extended once treatment is completed. Therefore, this review article will focus on when to treat, when to monitor, what patients should receive HBV therapy, and what drugs should be selected for each scenario. Lastly, we will update the definition, risk factors, screening, and treatment recommendations based on both current and different HBV management guidelines.

  16. New hybrid active power filter for harmonic current suppression and reactive power compensation

    Science.gov (United States)

    Biricik, Samet; Cemal Ozerdem, Ozgur; Redif, Soydan; Sezai Dincer, Mustafa

    2016-08-01

    In the case of undistorted and balanced grid voltages, low ratio shunt active power filters (APFs) can give unity power factors and achieve current harmonic cancellation. However, this is not possible when source voltages are distorted and unbalanced. In this study, the cost-effective hybrid active power filter (HAPF) topology for satisfying the requirements of harmonic current suppression and non-active power compensation for industry is presented. An effective strategy is developed to observe the effect of the placement of power capacitors and LC filters with the shunt APF. A new method for alleviating the negative effects of a nonideal grid voltage is proposed that uses a self-tuning filter algorithm with instantaneous reactive power theory. The real-time control of the studied system was achieved with a field-programmable gate array (FPGA) architecture, which was developed using the OPAL-RT system. The performance result of the proposed HAPF system is tested and presented under nonideal supply voltage conditions.

  17. Research and Development for an Alternative RF Source Using Magnetrons in CEBAF

    Science.gov (United States)

    Jacobs, Andrew

    2016-09-01

    At Jefferson Lab, klystrons are currently used as a radiofrequency (RF) power source for the 1497 MHz Continuous Electron Beam Accelerator Facility (CEBAF) Continuous Wave (CW) system. A drop-in replacement for the klystrons in the form of a system of magnetrons is being developed. The klystron DC-RF efficiency at CEBAF is 35-51% while the estimated magnetron efficiency is 80-90%. Thus, the introduction of magnetrons to CEBAF will have enormous benefits in terms of electrical power saving. The primary focus of this project was to characterize a magnetron's frequency pushing and pulling curves at 2.45 GHz with stub tuner and anode current adjustments so that a Low Level RF controller for a new 1.497 GHz magnetron can be built. A Virtual Instrument was created in LabVIEW, and data was taken. The resulting data allowed for the creation of many constant lines of frequency and output power. Additionally, the results provided a characterization of magnetron oven temperature drift over the operation time and the relationship between anode current and frequency. Using these results, the control model of different variables and their feedback or feedforward that affect the frequency pushing and pulling of the magnetron is better developed. Department of Energy, Science Undergraduate Laboratory Internships, and Jefferson Lab.

  18. Ionized magnetron sputtering of aluminum(,2)oxygen(,3)

    Science.gov (United States)

    Gonzalez, Patrick Fernando

    2000-10-01

    This dissertation shows a detailed study of the conditions necessary for sputtering alumina using a novel variant of ionized magnetron sputtering (IMS) first demonstrated by Yamashita et. al. The study presented herein leverages concurrent research at our laboratory on high density plasmas, plasma characterization and charged particle beams research to demonstrate a new source capable of sputtering hydrated alumina films at high rates. High quality ceramics such as Al2O3 find uses in a variety of applications, and in particular, for mass storage applications. Consequently, there exists an ever-growing need to provide and improve the capability of growing thick insulating films. Ideally, the insulating film should be stoichiometric and able to be grown at rates high enough to be easily manufacturable. Alumina is a particularly attractive due to its high density, Na barrier properties, and stability and radiation resistance. However, high quality films are often difficult to achieve with conventional RF plasma due to extremely slow deposition rates and difficulties associated with system cooling. The preferred method is to reactively sputter Al from a solid target in an O2 ambient. Nevertheless, this process is inherently unstable and leads to arcing and uneven target wear when magnetrons are used. In this study, we build the sputtering source, evaluate, and maximize the deposition characteristics of alumina films sputtered from a solid target in an Ar/O2 ambient. Semi-crystalline (kappa + theta) alumina has been reported using a similar technique at temperatures as low 370 C. The difference in the system used herein is that RF power is used for both, the inductive and capacitive components. Additionally, we use a solid target made of sintered alumina throughout the experiment. A model is developed using regression analysis and compared to results obtained. Because plasma parameters can interact with each other, we explore ICP/CCP power interactions and gas influence

  19. Simulation Study Using an Injection Phase-locked Magnetron as an Alternative Source for SRF Accelerators

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Haipeng [Thomas Jefferson National Accelerator Facility, Newport News, VA (United States); Plawski, Tomasz E. [Thomas Jefferson National Accelerator Facility, Newport News, VA (United States); Rimmer, Robert A. [Thomas Jefferson National Accelerator Facility, Newport News, VA (United States)

    2015-09-01

    As a drop-in replacement for the CEBAF CW klystron system, a 1497 MHz, CW-type high-efficiency magnetron using injection phase lock and amplitude variation is attractive. Amplitude control using magnetic field trimming and anode voltage modulation has been studied using analytical models and MATLAB/Simulink simulations. Since the 1497 MHz magnetron has not been built yet, previously measured characteristics of a 2.45GHz cooker magnetron are used as reference. The results of linear responses to the amplitude and phase control of a superconducting RF (SRF) cavity, and the expected overall benefit for the current CEBAF and future MEIC RF systems are presented in this paper.

  20. Magnetron sputtering system stabilisation for high rate desposition of AlN films

    DEFF Research Database (Denmark)

    Fomin, A; Akhmatov, Vladislav; Selishchev, S

    1998-01-01

    The stabilisation of a planar magnetron sputtering system for reactive sputtering of AlN in a gaseous mixture of Ar and highly active NH3 was examined. The helical instability in the cathode plasma sheath was observed and methods for its damping were proposed. It was found that the deposition of c...

  1. Simulation and Experimental Studies of a 2.45GHz Magnetron Source for an SRF Cavity with Field Amplitude and Phase Controls

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Haipeng [Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States); Plawski, Tomasz E. [Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States); Rimmer, Robert A. [Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States); Dudas, A. [Muons Inc., Batavia, IL (United States); Neubauer, M. L. [Muons Inc., Batavia, IL (United States)

    2016-06-01

    Phase lock to an SRF cavity by using injection signal through output waveguide of a magnetron has been demonstrated [1, 3]. Amplitude control using magnetic field trimming and anode voltage modulation has been studied using MATLAB/Simulink simulations [2]. Based on these, we are planning to use an FPGA based digital LLRF system, which allows applying various types of control algorithms in order to achieve the required accelerating field stability. Since the 1497 MHz magnetron is still in the design stage, the proof of principle measurements of a commercial 2450 MHz magnetron are carried out to characterize the anode I-V curve, output power (the tube electronic efficiency), frequency dependence on the anode current (frequency pushing) and the Rieke diagram (frequency pulling by the reactive load). Based on early Simulink simulation, experimental data and extension of the Adler equation governing injection phase stability by Chen’s model, the specification of the new LLRF control chassis for both 2450 and 1497MHz systems are presented in this paper.

  2. Early cytomegalovirus reactivation remains associated with increased transplant-related mortality in the current era: a CIBMTR analysis.

    Science.gov (United States)

    Teira, Pierre; Battiwalla, Minoo; Ramanathan, Muthalagu; Barrett, A John; Ahn, Kwang Woo; Chen, Min; Green, Jaime S; Saad, Ayman; Antin, Joseph H; Savani, Bipin N; Lazarus, Hillard M; Seftel, Matthew; Saber, Wael; Marks, David; Aljurf, Mahmoud; Norkin, Maxim; Wingard, John R; Lindemans, Caroline A; Boeckh, Michael; Riches, Marcie L; Auletta, Jeffery J

    2016-05-19

    Single-center studies have reported an association between early (before day 100) cytomegalovirus (CMV) reactivation and decreased incidence of relapse for acute myeloid leukemia (AML) following allogeneic hematopoietic cell transplantation. To substantiate these preliminary findings, the Center for International Blood and Marrow Transplant Research (CIBMTR) Database was interrogated to analyze the impact of CMV reactivation on hematologic disease relapse in the current era. Data from 9469 patients transplanted with bone marrow or peripheral blood between 2003 and 2010 were analyzed according to 4 disease categories: AML (n = 5310); acute lymphoblastic leukemia (ALL, n = 1883); chronic myeloid leukemia (CML, n = 1079); and myelodysplastic syndrome (MDS, n = 1197). Median time to initial CMV reactivation was 41 days (range, 1-362 days). CMV reactivation had no preventive effect on hematologic disease relapse irrespective of diagnosis. Moreover, CMV reactivation was associated with higher nonrelapse mortality [relative risk [RR] among disease categories ranged from 1.61 to 1.95 and P values from .0002 to <.0001; 95% confidence interval [CI], 1.14-2.61). As a result, CMV reactivation was associated with lower overall survival for AML (RR = 1.27; 95% CI, 1.17-1.38; P <.0001), ALL (RR = 1.46; 95% CI, 1.25-1.71; P <.0001), CML (RR = 1.49; 95% CI, 1.19-1.88; P = .0005), and MDS (RR = 1.31; 95% CI, 1.09-1.57; P = .003). In conclusion, CMV reactivation continues to remain a risk factor for poor posttransplant outcomes and does not seem to confer protection against hematologic disease relapse.

  3. See Also:physica status solidi (b)physica status solidi (c)Copyright © 2004 WILEY-VCH Verlag GmbH & Co. KGaA, WeinheimGet Sample CopyFree Online Trial -->Recommend to Your LibrarianSave Title to My ProfileSet E-Mail Alert language="javascript">var homepagelinks = new Array(new Array("Journal Home","/cgi-bin/jhome/40000761",""),new Array("Issues","/cgi-bin/jtoc/40000761/",""),new Array("Early View","/cgi-bin/jeview/40000761/",""),new Array("News","/cgi-bin/jabout/40000761/news/index.html",""),new Array("Reviews","/cgi-bin/jabout/40000761/reviews.html",""),new Array("Read Cover Story","/cgi-bin/jabout/40000761/cover/2231/current.html","e"),new Array("","","s"),new Array("Product Information","/cgi-bin/jabout/40000761/2231_info.html",""),new Array("Editorial Board","/cgi-bin/jabout/40000761/edbd.html",""),new Array("For Authors","/cgi-bin/jabout/40000761/authors.html",""),new Array("For Referees","/cgi-bin/jabout/40000761/refserv.html",""),new Array("Subscribe","http://jws-edcv.wiley.com/jcatalog/JournalsCatalogOrder/JournalOrder?PRINT_ISSN=0031-8965",""),new Array("Contact","/cgi-bin/jabout/40000761/contact.html",""),new Array("Online Submission","http://www.manuscriptxpress.org/osm/",""),new Array("","","x"));writeJournalLinks("", "40000761");border="0" cellspacing="0" cellpadding="0" align="right"> Previous Issue | Next Issue >Volume 201, Issue14 (November 2004)Articles in the Current Issue:Rapid Research NoteHighly (001)-textured WS2-x films prepared by reactive radio frequency magnetron sputtering

    Science.gov (United States)

    Ellmer, K.; Mientus, R.; Seeger, S.; Weiß, V.

    2004-11-01

    Highly (001)-oriented WS2-x films were grown onto oxidized silicon substrates by reactive magnetron sputtering from a metallic tungsten target in argon-hydrogen sulfide mixtures. The best films with respect to the van-der-Waals orientation, i.e. with the (001) planes parallel to the substrate surface, were grown by excitation of the plasma with radio frequency of 27.12 MHz. These films exhibit the largest grains and the lowest film strain. It is shown that this effect is not due to the lower deposition rate at this high excitation frequency. Instead it was found that the lower DC voltage at the sputtering target is advantageous for the film growth since the bombardment of the growing film by highly energetic particles is avoided by this type of plasma excitation.

  4. 衬底温度对Al/Zn3 N2薄膜制备的影响%Effects of Temperature on the Preparation of Al/Zn3N2 Thin Films Using Magnetron Reactive Sputtering

    Institute of Scientific and Technical Information of China (English)

    冯军勤; 陈俊芳

    2015-01-01

    The effects of substrate temperature on the plasma active species were investigated by plasma optical emission spec‐troscopy .With increasing substrate temperature , the characteristic spectroscopy intensity of the first positive series of N2* (B3Πg →A 3Σ+u ) ,the second positive N2* ( C3Πu → B3Πg ) ,the first negative series N + *2 ( B2Σ+u → X2Σ+g ) and Zn* are in‐creased .Due to the substrate temperature ,each ion kinetic energy is increased and the collision ionization intensified in the cham‐ber .That leading to plasma ion density increase .These phenomenons’s show that the substrate temperature raises in a certain range was conducive to zinc nitride thin films growth .Zn3 N2 thin films were prepared on Al films using ion sources‐assisted magnetron sputtering deposition method .The degree of crystalline of the films was examined with X‐ray diffraction (XRD) .The results show that has a dominant peak located at 34.359°in room temperature ,which was corresponding to the (321) plane of cu‐bic anti‐bixbyite zinc nitride structure (JCPDS Card No35‐0762) .When the substrate temperature was 100 ℃ ,in addition to the (321) reflection ,more diffraction peaks appeared corresponding to the (222) ,(400) and (600) planes ,which were located at 31.756° ,36.620° and 56.612°respectively .When the substrate temperature was 200 ℃ ,in addition to the (321) ,(222) ,(400) and (600) reflection ,more new diffraction peaks also appeared corresponding to the (411) ,(332) ,(431) and (622) planes , which were located at 39.070 ,43.179° ,47.004° and 62.561°respectively .These results show the film crystalline increased gradually with raise the substrate temperature .XP‐1 profilometer were used to analyze the thickness of the Zn3 N2 films .The Zn3 N2 films deposited on Al films in mixture gas plasma had a deposition rate of 2.0 ,2.2 ,and 2.7 nm · min-1 .These results indicate that the deposition rate was gradually enhanced as substrate

  5. Bias-magnetron sputtering of tungsten carbide coatings on steel; Bias-Magnetron Sputtern von Wolframkarbid-Schichten auf Stahl

    Energy Technology Data Exchange (ETDEWEB)

    Gubisch, M.; Spiess, L.; Romanus, H.; Schawohl, J.; Knedlik, C. [Technische Universitaet Ilmenau, Institut fuer Werkstofftechnik/ Zentrum fuer Mikro- und Nanotechnologien (ZMN), Ilmenau (Germany)

    2004-11-01

    The influence of bias voltage between 0 V to -800 V on the properties of dc and rf magnetron sputtered tungsten carbide coatings with 1 {mu}m thickness on cold work steel 90MnCrV8 were determined. The coatings were analysed with SEM, AFM, EDX, XRD and micro hardness tester. The morphology, the chemical composition, the phase transformation and the hardness of the deposited layers were appropriated. Non-stoechiometric cubic phase of tungsten carbide WC{sub 1-x} with <100> preferred orientation formed by non reactive magnetron sputtering without ion bombardment. Chemical composition, crystallinity, preferred orientation, morphology and phases are influence by variation of bias voltage. These changes in coating properties results in significant variation of hardness between 8 GPa and 20 GPa. (Abstract Copyright [2004], Wiley Periodicals, Inc.) [German] In dieser Arbeit wird der Einfluss der Biasspannung im Bereich von 0 V bis -800 V auf die Eigenschaften von 1 {mu}m dicken DC und RF Magnetron gesputterten Wolframkarbidschichten auf niedriglegierten Kaltarbeitsstahl 90MnCrV8 untersucht. Die Schichten wurden mittels REM, EDX, AFM, Universalhaertepruefgeraet und XRD hinsichtlich der wichtigsten Schichteigenschaften wie Morphologie, Phasenausbildung, Vorzugsorientierung, Universalhaerte und chemischer Zusammensetzung charakterisiert. Ohne zusaetzlichen Ionenbeschuss bildet sich beim nichtreaktiven Magnetron Sputtern die nicht stoechiometrische kubische Phase des Wolframkarbids WC{sub 1-x} mit einer <100>-Orientierung aus. In Abhaengigkeit der Biasspannung wird die chemischen Zusammensetzung, Kristallinitaet, Vorzugsorientierung, Morphologie und die Phasenausbildung beeinflusst. Die Veraenderungen der genannten Schichteigenschaften fuehrten zu signifikanten Haerteaenderungen im Bereich von 8 GPa und 20 GPa. (Abstract Copyright [2004], Wiley Periodicals, Inc.)

  6. Carrier mobility of highly transparent conductive Al-doped ZnO polycrystalline films deposited by radio-frequency, direct-current, and radio-frequency-superimposed direct-current magnetron sputtering: Grain boundary effect and scattering in the grain bulk

    Science.gov (United States)

    Nomoto, Junichi; Makino, Hisao; Yamamoto, Tetsuya

    2015-01-01

    The effects of using radio-frequency (RF)-superimposed direct-current (DC) magnetron sputtering deposition on the structural, electrical, and optical properties of aluminum-doped ZnO (AZO)-based highly transparent conducting oxide films have been examined. AZO films were deposited on heated non-alkaline glass substrates (200 °C) using ZnO:Al2O3 (2 wt. % Al2O3) ceramic oxide targets with the total power varied from 150 to 300 W, and at various RF to DC power ratios, AZO films deposited by a mixed approach with the RF to the total power ratio of 0.14 showed the lowest resistivity of 2.47 × 10-4 Ω cm with the highest carrier concentration of 6.88 × 1020 cm-3 and the highest Hall mobility (μH) of 36.8 cm2/Vs together with the maximum value of an average transmittance in the visible spectral range from 400 to 700 nm. From the analysis of optical data based on the simple Drude model combined with the Tauc-Lorentz model and the results of Hall effect measurements, the optical mobility (μopt) was determined. A comparison of μopt with μH clarified the effects of the mixed approach not only on the reduction of the grain boundary contribution to the carrier transport but also on retaining high carrier mobility of in-grains for the AZO films.

  7. Effect of SiNx diffusion barrier thickness on the structural properties and photocatalytic activity of TiO2 films obtained by sol–gel dip coating and reactive magnetron sputtering

    Directory of Open Access Journals (Sweden)

    Mohamed Nawfal Ghazzal

    2015-10-01

    Full Text Available We investigate the effect of the thickness of the silicon nitride (SiNx diffusion barrier on the structural and photocatalytic efficiency of TiO2 films obtained with different processes. We show that the structural and photocatalytic efficiency of TiO2 films produced using soft chemistry (sol–gel and physical methods (reactive sputtering are affected differentially by the intercalating SiNx diffusion barrier. Increasing the thickness of the SiNx diffusion barrier induced a gradual decrease of the crystallite size of TiO2 films obtained by the sol–gel process. However, TiO2 obtained using the reactive sputtering method showed no dependence on the thickness of the SiNx barrier diffusion. The SiNx barrier diffusion showed a beneficial effect on the photocatalytic efficiency of TiO2 films regardless of the synthesis method used. The proposed mechanism leading to the improvement in the photocatalytic efficiency of the TiO2 films obtained by each process was discussed.

  8. Effect of SiN x diffusion barrier thickness on the structural properties and photocatalytic activity of TiO2 films obtained by sol-gel dip coating and reactive magnetron sputtering.

    Science.gov (United States)

    Ghazzal, Mohamed Nawfal; Aubry, Eric; Chaoui, Nouari; Robert, Didier

    2015-01-01

    We investigate the effect of the thickness of the silicon nitride (SiN x ) diffusion barrier on the structural and photocatalytic efficiency of TiO2 films obtained with different processes. We show that the structural and photocatalytic efficiency of TiO2 films produced using soft chemistry (sol-gel) and physical methods (reactive sputtering) are affected differentially by the intercalating SiN x diffusion barrier. Increasing the thickness of the SiN x diffusion barrier induced a gradual decrease of the crystallite size of TiO2 films obtained by the sol-gel process. However, TiO2 obtained using the reactive sputtering method showed no dependence on the thickness of the SiN x barrier diffusion. The SiN x barrier diffusion showed a beneficial effect on the photocatalytic efficiency of TiO2 films regardless of the synthesis method used. The proposed mechanism leading to the improvement in the photocatalytic efficiency of the TiO2 films obtained by each process was discussed.

  9. Fast Reactive Power Sharing, Circulating Current and Resonance Suppression for Parallel Inverters Using Resistive-Capacitive Output Impedance

    DEFF Research Database (Denmark)

    Chen, Yandong; Guerrero, Josep M.; Shuai, Zhikang

    2016-01-01

    virtual impedance loop, the inverter provides fast transient response. Based on the RC-type inverter modeling, the comparative frequency-domain analysis of equivalent output impedances are discussed, and the impact of the virtual complex impedance over the circulating currents and high......In this paper, an inverter using resistivecapacitive output impedance (RC-type inverter) is proposed not only to provide fast reactive power sharing to support microgrid voltage, and but also to reduce circulating currents and damp high-frequency resonances among inverters. Introducing the RC...

  10. Tribological development of TiCN coatings by adjusting the flowing rate of reactive gases

    Science.gov (United States)

    Tillmann, Wolfgang; Momeni, Soroush

    2016-03-01

    TiCN coatings were deposited by means of direct current magnetron sputtering of Ti targets in presence of N2 and C2H2 reactive gases. The microstructure, composition, mechanical and tribological properties of the deposited thin films were analyzed by using X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), nanoindentation, ball-on-disc, scratch test, and three dimensional (3D) optical microscopy. The obtained results presents a reproducible processing route for tailoring microstructure, mechanical and tribological behavior of TiCN coatings by controlling flowing rate of the reactive gases.

  11. Setup for in situ X-ray diffraction studies of thin film growth by magnetron sputtering

    CERN Document Server

    Ellmer, K; Weiss, V; Rossner, H

    2001-01-01

    A novel method is described for the in situ-investigation of nucleation and growth of thin films during magnetron sputtering. Energy dispersive X-ray diffraction with synchrotron light is used for the structural analysis during film growth. An in situ-magnetron sputtering chamber was constructed and installed at a synchrotron radiation beam line with a bending magnet. The white synchrotron light (1-70 keV) passes the sputtering chamber through Kapton windows and hits one of the substrates on a four-fold sample holder. The diffracted beam, observed under a fixed diffraction angle between 3 deg. and 10 deg., is energy analyzed by a high purity Ge-detector. The in situ-EDXRD setup is demonstrated for the growth of tin-doped indium oxide (ITO) films prepared by reactive magnetron sputtering from a metallic target.

  12. Method to control deposition rate instabilities—High power impulse magnetron sputtering deposition of TiO{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Kossoy, Anna, E-mail: annaeden@hi.is, E-mail: anna.kossoy@gmail.com; Magnusson, Rögnvaldur L.; Tryggvason, Tryggvi K.; Leosson, Kristjan; Olafsson, Sveinn [Physics Division, Science Institute—University of Iceland, Reykjavik 107 (Iceland)

    2015-03-15

    The authors describe how changes in shutter state (open/closed) affect sputter plasma conditions and stability of the deposition rate of Ti and TiO{sub 2} films. The films were grown by high power impulse magnetron sputtering in pure Ar and in Ar/O{sub 2} mixture from a metallic Ti target. The shutter state was found to have an effect on the pulse waveform for both pure Ar and reactive sputtering of Ti also affecting stability of TiO{sub 2} deposition rate. When the shutter opened, the shape of pulse current changed from rectangular to peak-plateau and pulse energy decreased. The authors attribute it to the change in plasma impedance and gas rarefaction originating in geometry change in front of the magnetron. TiO{sub 2} deposition rate was initially found to be high, 1.45 Å/s, and then dropped by ∼40% during the first 5 min, while for Ti the change was less obvious. Instability of deposition rate poses significant challenge for growing multilayer heterostructures. In this work, the authors suggest a way to overcome this by monitoring the integrated average energy involved in the deposition process. It is possible to calibrate and control the film thickness by monitoring the integrated pulse energy and end growth when desired integrated pulse energy level has been reached.

  13. Negative Ion Sources: Magnetron and Penning

    CERN Document Server

    Faircloth, D C

    2013-01-01

    The history of the magnetron and Penning electrode geometry is briefly outlined. Plasma generation by electrical discharge-driven electron impact ionization is described and the basic physics of plasma and electrodes relevant to magnetron and Penning discharges are explained. Negative ions and their applications are introduced, along with their production mechanisms. Caesium and surface production of negative ions are detailed. Technical details of how to build magnetron and Penning surface plasma sources are given, along with examples of specific sources from around the world. Failure modes are listed and lifetimes compared.

  14. In Vitro Comparison of Two Most Promising H-Oximes (HI-6 and HLö-7) and Currently Commercially Available Reactivators Pralidoxime and Obidoxime in Reactivation of Cyclosarin-Inhibited Human Cholinesterases.

    Science.gov (United States)

    Kuca, Kamil; Cabal, Jiri; Jun, Daniel; Koleckar, Vit

    2008-01-01

    ABSTRACT This study describes the evaluation of the in vitro ability of two acetylcholinesterase (EC 3.1.1.7) reactivators, HI-6 and HLö-7, very promising at present, to reactivate human brain cholinesterases inhibited by the nerve agent cyclosarin. The results obtained (percentage of reactivation and appropriate constants characterizing the whole reactivation process) were compared with two currently available reactivators on the market: pralidoxime and obidoxime. It is clear that both promising oximes surpassed the potency of standard reactivators, especially at human relevant concentrations (10(-4) M and lower). Because of the prohibition of such experiments on humans, data obtained in this study could be used as input data for prediction of in vivo action of these drugs in future.

  15. Room temperature DC magnetron sputtering deposition and field emission of Al-doped ZnO films

    Energy Technology Data Exchange (ETDEWEB)

    Ye, Fan; Cai, Xing-Min; Zhang, Dong-Ping; Fan, Ping; Liu, Li-Jun [School of Physical Science and Technology and Shenzhen Key Laboratory of Sensor Technologies, Shenzhen University, Shenzhen 518060 (China); Dai, Fu-Ping [Department of Applied Physics, Northwestern Polytechnic University, Xian 710072 (China)

    2011-08-15

    Al doped ZnO films were prepared by reactive direct current (DC) magnetron sputtering at room temperature. The targets were metallic Al and Zn while the gases were Ar and O{sub 2}. X-ray diffraction (XRD) shows that the films are of hexagonal structure and Al is successfully doped into ZnO without secondary phases detected. Raman scattering spectra of the films contain the E{sub 1} mode of ZnO. Seebeck effect shows that the films are n-type and four probe instrument shows that the films are very resistive. The high resistivity is due to the compensation of acceptors such as oxygen vacancies and substitutional nitrogen atoms. The acceptors reduce the electron density and increase the work function of ZnO, which therefore weakens the field emission of Al doped ZnO films. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  16. Photoelectric Properties of Mo Doped TiO2 Thin Films Deposited by DC Reactive Magnetron Sputtering%直流反应磁控溅射制备的Mo掺杂TiO2薄膜的光电特性

    Institute of Scientific and Technical Information of China (English)

    颜秉熙; 罗胜耘; 沈杰

    2012-01-01

    Nanocrystalline TiO? Thin films doped with different concentrations of Mo were deposited by direct current (DC) reactive magnetron sputtering. The influence of Mo on surfaces, crystal structures, the valence states of elements and the absorption band of Mo doped TiO2 films were characterized by means of atomic force microscopy (AFM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and Ultraviolet-visible spectroscopy (UV-Vis). To investigate the photoelectric characteristic of ITO (indium tin oxide)/Mo-TiO2 electrodes, a series of cyclic voltammetry experiments were conducted. The results indicate that an appropriate amount of Mo atoms, observed as Mo6* and Mo5* by XPS, could inhibit the crystal growth of particles, enhance the surface roughness of the Mo doped TiO2 thin film, and bring about a remarkable red shift of the absorption spectra. As the concentration of Mo increased, the energy gap declined at first until the amount of doped Mo eventually reached 3.6% (n(Mo)/n(Ti)), when a blue shift of spectra resulted and the energy gap grew wider. The sample doped with 0.9% Mo was irradiated with a Xe lamp and showed the highest photocurrent, which continued to increase with increasing voltage exerted on the anode. An increase in Mo concentration resulted in a decrease in photocurrent. Compared to the pure TiO2 film, the sample with 3.6% Mo had a much lower photocurrent. Our experiments demonstrate that Mo doping, when the concentration was controlled under a relatively low limit, brought about a significant improvement of the photoelectric properties of the TiO3 films. The highest photocurrent observed is 2.4 times that of the sample with no Mo doping.%通过直流反应磁控溅射制备了不同Mo掺杂量的Mo-TiO2薄膜.用原子力显微镜(AFM)、X射线衍射(XRD)仪、X射线光电子能谱(XPS)仪、紫外-可见(UV-Vis)分光光度计详细研究了Mo掺杂量对薄膜表面形貌、晶体结构、元素价态及吸收带边的影响.用

  17. Current and Future Deposition of Reactive Nitrogen to United States National Parks

    Science.gov (United States)

    Ellis, R.; Jacob, D. J.; Zhang, L.; Payer, M.; Holmes, C. D.; Schichtel, B. A.

    2012-12-01

    The concentrations of reactive nitrogen species in the atmosphere have been altered by anthropogenic activities such as fossil fuel combustion and agriculture. The United States National Parks are protected areas wherein the natural habitat is to be conserved for future generations. However, deposition of reactive nitrogen (N) to terrestrial and aquatic ecosystems can lead to changes, some of which may not be reversible. We investigate the deposition of N to U.S. National Parks using the GEOS-Chem chemical transport model with 0.5 x 0.667 degree resolution over North America. We compare the annual nitrogen deposition for each park to a critical load, above which significant harmful effects on specific ecosystem elements are likely to occur. For our base year 2006, we find 9 parks to be in exceedance of their critical load, mainly located in the east where N deposition can reach up to 25 kg N per hectare per year. Future changes in N deposition are also investigated using the IPCC Representative Concentration Pathway (RCP) emission scenarios for 2050. We use RCP8.5 as a "business-as-usual" scenario for N deposition and find that under this emission scenario, 18 parks are predicted to be in exceedance of their critical loads by the year 2050. Most of this increase in N deposition is due to increases in the emissions of ammonia. RCP4.5 was used as a more optimistic scenario but we still find 12 parks in exceedance of their critical loads. This work suggests that in order to meet N deposition critical load goals in U.S. National Parks, policy-makers should consider regulations on ammonia.

  18. C-axis orientated AlN films deposited using deep oscillation magnetron sputtering

    Science.gov (United States)

    Lin, Jianliang; Chistyakov, Roman

    2017-02-01

    Highly c-axis orientated aluminum nitride (AlN) films were deposited on silicon (100) substrates by reactive deep oscillation magnetron sputtering (DOMS). No epitaxial favored bond layer and substrate heating were applied for assisting texture growth. The effects of the peak target current density (varied from 0.39 to 0.8 Acm-2) and film thickness (varied from 0.25 to 3.3 μm) on the c-axis orientation, microstructure, residual stress and mechanical properties of the AlN films were investigated by means of X-ray diffraction rocking curve methodology, transmission electron microscopy, optical profilometry, and nanoindentation. All AlN films exhibited a preferred orientation and compressive residual stresses. At similar film thicknesses, an increase in the peak target current density to 0.53 Acm-2 improved the orientation. Further increasing the peak target current density to above 0.53 Acm-2 showed limited contribution to the texture development. The study also showed that an increase in the thickness of the AlN films deposited by DOMS improved the c-axis alignment accompanied with a reduction in the residual stress.

  19. New Simulation Method of New HV Power Supply for Industrial Microwave Generators with N=2 Magnetrons

    Directory of Open Access Journals (Sweden)

    N. El Ghazal

    2013-01-01

    Full Text Available This original work treats a new simulation method of a new type of high voltage power supply for microwave generators with N magnetrons (treated case: N=2 magnetrons, used as a source of energy in the industrial applications. This new power supply is composed of a single-phase HV transformer with magnetic leakage flow, supplying two parallel cells, which multiplies the voltage and stabilizes the current. The doubler supplies one magnetron. The transformer is presented by its p equivalent circuit. Each inductance of the model is characterized by its relation "flow-current". In this paper, we present a new approach validation of the p model of the special transformer using Matlab-Simulink code. The theoretical results compared with the experimental measurements, is in good agreement with them. The use of this tool Matlab-Simulink, has allowed us to confirm the possibility of the operation of this new system without interaction between magnetrons, with a view to a possible optimization which lead to reduce the weight, the volume and the cost of implementation while ensuring the process of regulating the current in each magnetron.

  20. Imaging mitochondrial reactive oxygen species with fluorescent probes: current applications and challenges.

    Science.gov (United States)

    Zhang, X; Gao, F

    2015-04-01

    Mitochondrial reactive oxygen species (ROS) is a key element in the regulation of several physiological functions and in the development or progression of multiple pathological events. A key task in the study of mitochondrial ROS is to establish reliable methods for measuring the ROS level in mitochondria with high selectivity, sensitivity, and spatiotemporal resolution. Over the last decade, imaging tools with fluorescent indicators from either small-molecule dyes or genetically encoded probes that can be targeted to mitochondria have been developed, which provide a powerful method to visualize and even quantify mitochondrial ROS level not only in live cells, but also in live animals. These innovative tools that have bestowed exciting new insights in mitochondrial ROS biology have been further promoted with the invention of new techniques in indicator design and fluorescent detection. However, these probes present some limitations in terms of specificity, sensitivity, and kinetics; failure to recognize these limitations often results in inappropriate interpretations of data. This review evaluates the recent advances in mitochondrial ROS imaging approaches with emphasis on their proper application and limitations, and highlights the future perspectives in the development of novel fluorescent probes for visualizing all species of ROS.

  1. Influence of addition of indium and of post-annealing on structural, electrical and optical properties of gallium-doped zinc oxide thin films deposited by direct-current magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Pham, Duy Phong [Laboratory of Advanced Materials, University of Science, Vietnam National University, HoChiMinh (Viet Nam); College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Nguyen, Huu Truong [Laboratory of Advanced Materials, University of Science, Vietnam National University, HoChiMinh (Viet Nam); Phan, Bach Thang [Laboratory of Advanced Materials, University of Science, Vietnam National University, HoChiMinh (Viet Nam); Faculty of Materials Science, University of Science, Vietnam National University, HoChiMinh (Viet Nam); Hoang, Van Dung [Laboratory of Advanced Materials, University of Science, Vietnam National University, HoChiMinh (Viet Nam); Maenosono, Shinya [School of Materials Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292 (Japan); Tran, Cao Vinh, E-mail: tcvinh@hcmus.edu.vn [Laboratory of Advanced Materials, University of Science, Vietnam National University, HoChiMinh (Viet Nam)

    2015-05-29

    In this study, both gallium-doped zinc oxide (GZO) and indium-added gallium-doped zinc oxide (IGZO) thin films were deposited on commercial glasses by magnetron dc-sputtering in argon atmosphere. The crystal structure, electrical conductivity and optical transmission of as-deposited as well as post-annealed thin films of both GZO and IGZO were investigated for comparison. A small amount of indium introduced into GZO thin films had improved their polycrystalline structure and increased their electrical conductivity by over 29%. All obtained GZO and IGZO thin films have strong [002] crystalline direction, a characteristic orientation of ZnO thin films. Although post-annealed in air at high temperatures up to 500 °C, IGZO thin films still had very low sheet resistance of 6.6 Ω/□. Furthermore, they had very high optical transmission of over 80% in both visible and near-infrared regions. - Highlights: • Doping 0.1 at.% indium enhanced crystalline, electrical properties of GZO films. • The mobility of IGZO films was 25% higher than that of GZO films. • The IGZO films will be potential materials for transparent conducting electrodes.

  2. Integration of Renewable Energy for the Harmonic Current and Reactive Power Compensation

    DEFF Research Database (Denmark)

    Pouresmaeil, Edris; Shaker, Hamid Reza; Mehrasa, Majid;

    2015-01-01

    This paper deals with a control technique for multilevel converter topologies base on Direct Lyapunov Control Method (DLCM) for integration of Renewable Energy Resources (RER) into the power grid. The compensation of variations in reference current components is considered properly in this control...

  3. Effects of dopant concentration and impurities on the conductivity of magnetron-sputtered nanocrystalline yttria-stabilized zirconia

    DEFF Research Database (Denmark)

    Sillassen, M.; Eklund, P.; Pryds, Nini;

    2010-01-01

    Cubic yttria-stabilized zirconia (YSZ) films with yttria concentrations of 8.7, 9.9, and 11 mol% have been deposited by reactive pulsed DC magnetron from Zr–Y alloy targets. The overall microstructure and texture in the films showed no dependence on the yttria concentration. Films deposited at fl...

  4. Room temperature deposition of high figure of merit Al-doped zinc oxide by pulsed-direct current magnetron sputtering: Influence of energetic negative ion bombardment on film's optoelectronic properties

    Energy Technology Data Exchange (ETDEWEB)

    Fumagalli, F., E-mail: francesco.fumagalli@iit.it; Martí-Rujas, J., E-mail: javier.rujas@iit.it; Di Fonzo, F., E-mail: fabio.difonzo@iit.it

    2014-10-31

    Aluminum-doped zinc oxide is regarded as a promising indium-free transparent conductive oxide for photovoltaic and transparent electronics. In this study high transmittance (up to 90,6%) and low resistivity (down to 8,4°1{sup −4} Ω cm) AZO films were fabricated at room temperature on thermoplastic and soda-lime glass substrates by means of pulsed-DC magnetron sputtering in argon gas. Morphological, optical and electrical film properties were characterized using scanning electron microscopy, UV–vis–nIR photo-spectrometer, X-ray spectroscopy and four probes method. Optimal deposition conditions were found to be strongly related to substrate position. The dependence of functional properties on substrate off-axis position was investigated and correlated to the angular distributions of negative ions fluxes emerging from the plasma discharge. Figure of merit as high as 2,15 ± 0,14 Ω{sup −1} were obtained outside the negative oxygen ions confinement region. Combination of high quality AZO films deposited on flexible polymers substrates by means of a solid and scalable fabrication technique is of interest for application in cost-effective optoelectrical devices, organic photovoltaics and polymer based electronics. - Highlights: • High figure of merit transparent conductive oxide's deposited at room temperature. • High transmittance and low resistivity obtained on thermoplastic substrates. • Competitive optoelectrical properties compared to high temperature deposition. • Negative ion fluxes confinement influence structural and optoelectrical properties. • Easily adaptable for scaled-up low temperature AZO film deposition installations.

  5. 采用真空磁控反应溅射和热水氧化法制备AlNxOy增透膜%Preparation of Transmittance-Increasing AlNxOy Film by Vacuum Magnetron Reactively Sputtering and Hydrothermal Oxidation Method

    Institute of Scientific and Technical Information of China (English)

    池华敬; 熊凯; 郭帅; 许丽; 王双; 陈革; 章其初

    2011-01-01

    在3.2mm厚的低铁玻璃衬底上采用金属Al靶在溅射气体Ar和反应气体H2的混合气体中,真空磁控反应溅射沉积半透明的Al-AlN金属陶瓷薄膜.再将沉积该薄膜的玻璃试样浸入沸腾的去离子水中,经一定时间氧化后,制备成表面粗糙的AlN和Al2O3的陶瓷混合物增透膜AlNxOy.在3.2 mm厚的低铁玻璃上,溅射沉积厚度为120 nm的Al-AlN金属陶瓷薄膜,沸水氧化8 min,制备的单面增透膜AlNxOy试样的太阳透射比Te达93.5%,可见光透射比Tv达95.2%.制备的双面增透膜AlNxOy试样的Te,Tv进一步提高,Te高达95.6%,与未镀膜玻璃衬底的90.4%相比,增加了5.2%;Tv高达97.0%,与玻璃衬底的91.6%相比,增加了5.4%.%The translucent A1-A1N cermet thin film are deposited on 3.2 mm thickness low-iron glass substrate by magnetron reactive sputtering using Al target in the atmosphere of Ar and N2. The transmittance-increasing film of AlNxOy with surface roughness are made after hydrothermal oxidation in boiling pure water for a certain time. For a 3.2 mm thickness low-iron glass with a AlNxOy, film obtained by oxidation a 120 nm thickness A1-A1N film in boiling water for 8 min, the measured solar light transmittance Te is 93.5%, and the visible light transmittance Tv is 95.2%. For a glass that both sides is coated, Te and Tv are 95.6% and 97% respectively, while for uncoated glass, the two values are 90.4% and 91.6%.

  6. Failures’ Study of a New Character Three-Phase High Voltage Supply for industrial Microwave Generators with one magnetrons per Phase

    Directory of Open Access Journals (Sweden)

    R. Batit

    2016-04-01

    Full Text Available This article treats the development of one of the equivalent electrical models for a single phase power supply for one magnetron; in particular that of its own high voltage (HV transformer newly dimensioned. This single phase system supplies a voltage doubler and current stabilizer circuit, which supplies a single magnetron. Then, by star connecting the three identical models of the single-phase power supply for one magnetron, we obtain a new character three-phase high voltage power supply for industrial microwave generators with one magnetron per phase. The simulation with EMTP (Electro Magnetic Transcients Program in nominal operation has given the theoretical results close to the experimental measurements. Finally, the magnetrons’ failure of the microwave generator was also treated and allowed to observe the interaction’s influence between magnetrons; also the regulation of the anode current has been achieved successfully.

  7. Anisotropies in magnetron sputtered carbon nitride thin films

    Science.gov (United States)

    Hellgren, Niklas; Johansson, Mats P.; Broitman, Esteban; Hultman, Lars; Sundgren, Jan-Eric

    2001-04-01

    Carbon nitride CNx (0⩽x⩽0.35) thin films, deposited by reactive dc magnetron sputtering in Ar/N2 discharges have been studied with respect to microstructure using electron microscopy, and elastic modulus using nanoindentation and surface acoustic wave analyses. For growth temperature of 100 °C, the films were amorphous, and with an isotropic Young's modulus of ˜170-200 GPa essentially unaffected by the nitrogen fraction. The films grown at elevated temperatures (350-550 °C) show anisotropic mechanical properties due to a textured microstructure with standing basal planes, as observed from measuring the Young's modulus in different directions. The modulus measured in the plane of the film was ˜60-80 GPa, while in the vertical direction the modulus increased considerably from ˜25 to ˜200 GPa as the nitrogen content was increased above ˜15 at. %.

  8. Comparative Study of Cu Films Prepared by DC, High-Power Pulsed and Burst Magnetron Sputtering

    Science.gov (United States)

    Solovyev, A. A.; Oskirko, V. O.; Semenov, V. A.; Oskomov, K. V.; Rabotkin, S. V.

    2016-08-01

    A comparative study of deposition rate, adhesion, structural and electrical properties of nanocrystalline copper thin films deposited using direct current magnetron sputtering (DCMS) and different regimes of high power pulsed magnetron sputtering is presented. High-power impulse magnetron sputtering (HIPIMS) and burst regime (pulse packages) of magnetron sputtering are investigated. The ion and atomic flows toward the growing film during magnetron sputtering of a Cu target are determined. X-ray diffraction, scanning electron microscopy and atomic force microscopy were used to observe the structural characterization of the films. The resistivity of the films was measured using four-point probe technique. In all sputtering regimes, Cu films have mixture crystalline orientations of [111], [200], [311] and [220] in the direction of the film growth. As peak power density in studied deposition regimes was different in order of magnitude (from 15 W/cm2 in DC regime to 3700 W/cm2 in HIPIMS), film properties were also greatly different. DCMS Cu films exhibit a porous columnar grain structure. In contrast, HIPIMS Cu films have a slightly columnar and denser composition. Cu films deposited using burst regimes at peak power density of 415 W cm-2 and ion-to-atom ratio of about 5 have the densest composition and smallest electrical resistance.

  9. 靶电流对磁控溅射减摩复合镀层组织与性能的影响%Influence of Target Current on the Microstructure and Properties of the Antifriction Composite Coatings Prepared by Magnetron Sputtering

    Institute of Scientific and Technical Information of China (English)

    郭巧琴; 李建平

    2016-01-01

    The bearing prepared by magnetron sputtering depends on importing .The AlSn20/C composite coatings on bearing alloy were prepared by magnetron sputtering .The influence of graphite target current on the microstructure ,hardness ,corrosion resistance ,bonding force and friction coefficient was analyzed .The results show :While the graphite target current is 1 .0 A ,the surface structure is uniform ,the atoms of Al and Sn match well .The hardness of the coating is inversely proportional to the graphite target current ,in the scope of 1 .0 ~ 1 .2 A .While the graphite target current is 1 .0 A ,its hardness is the hardest ,i .e 601 HV0 .025 ,the bonding force between coating and matrix is 33 N ,and the friction coefficient achieves 0 .12 .%目前我国溅镀轴瓦依赖进口.采用非平衡磁控溅射在轴承合金表面制备了A lS n20/C复合镀层,分析了碳靶电流的改变对轴承合金表面复合镀层的表面形貌、硬度、耐蚀性、膜基结合力以及摩擦系数等的影响.研究结果表明:当碳靶电流在1.0~1.2A时,非平衡磁控溅射A lS n20/C复合镀层;当碳靶电流为1.0 A 时,镀层表面组织均匀,铝原子、锡原子和碳原子达到最佳匹配;当碳靶电流在1.0~1.2A时,镀层硬度与碳靶电流成反比,当其为1.0 A时,镀层硬度最高为601 H V0.025,结合力最高可达33 N ,镀层的摩擦系数最低达到0.12.

  10. Multi-frequency recirculating planar magnetrons

    Science.gov (United States)

    Greening, Geoffrey B.; Jordan, Nicholas M.; Exelby, Steven C.; Simon, David H.; Lau, Y. Y.; Gilgenbach, Ronald M.

    2016-08-01

    The multi-frequency recirculating planar magnetron (MFRPM) is the first magnetron capable of simultaneous generation of significantly different output frequencies (1 and 2 GHz) in a single operating pulse. Design and simulation of a prototype MFRPM were followed by hardware fabrication and experimental verification using the Michigan Electron Long Beam Accelerator with a Ceramic insulator at -300 kV, 1-5 kA, and 0.14-0.23 T axial magnetic field. Preliminary results demonstrated simultaneous generation of microwave pulses near 1 GHz and 2 GHz at powers up to 44 MW and 21 MW, respectively, with peak total efficiencies up to 9%.

  11. Installation and commissioning of the new Fermi National Accelerator Laboratory H- Magnetron

    Energy Technology Data Exchange (ETDEWEB)

    Bollinger, D. S., E-mail: bollinger@fnal.gov [Proton Source Department, Fermi National Accelerator Laboratory, Batavia, Illinois 60510 (United States)

    2014-02-15

    The Fermi National Accelerator Laboratory (FNAL) 40 year old Cockcroft-Walton 750 keV injectors with slit aperture magnetron ion sources have been replaced with a circular aperture magnetron, Low Energy Beam Transport, Radio Frequency Quadrupole Accelerator, and Medium Energy Beam Transport, as part of the FNAL Proton Improvement Plan. The injector design is based on a similar system at Brookhaven National Laboratory. The installation, commissioning efforts, and source operations to date will be covered in this paper along with plans for additional changes to the original design to improve reliability by reducing extractor spark rates and arc current duty factor.

  12. Computer simulation of sputtering of graphite target in magnetron sputtering device with two zones of erosion

    Directory of Open Access Journals (Sweden)

    Bogdanov R.V.

    2015-03-01

    Full Text Available A computer simulation program for discharge in a magnetron sputtering device with two erosion zones was developed. Basic laws of the graphite target sputtering process and transport of sputtered material to the substrate were taken into account in the Monte Carlo code. The results of computer simulation for radial distributions of density and energy flux of carbon atoms on the substrate (at different values of discharge current and pressure of the working gas confirmed the possibility of obtaining qualitative homogeneous films using this magnetron sputtering device. Also the discharge modes were determined for this magnetron sputtering device, in which it was possible to obtain such energy and density of carbon atoms fluxes, which were suitable for deposition of carbon films containing carbon nanotubes and other nanoparticles.

  13. Synthesis of Tantalum-Doped Tin Oxide Thin Films by Magnetron Sputtering for Photovoltaic Applications

    Science.gov (United States)

    Nguyen, Ngoc Minh; Luu, Manh Quynh; Nguyen, Minh Hieu; Nguyen, Duy Thien; Bui, Van Diep; Truong, Thanh Tu; Pham, Van Thanh; Nguyen-Tran, Thuat

    2017-06-01

    Tantalum-doped tin oxide transparent conductive thin films were deposited on glass substrates by radio frequency and direct current reactive magnetron co-sputtering methods in an argon and oxygen environment. Optimization of the thin films for photovoltaic applications was performed using a dimensionless figure of merit by combining electrical and transparency properties. The optimized thin film showed a weight-averaged transmittance of 83%, a band gap value of 3.2 eV, resistivity of 5.2 × 10-3 Ω cm, and bulk carrier concentration of 1.2 × 1020 cm-3. The lowest resistivity among all films was 2.1 × 10-3 Ω cm, corresponding to a weight-averaged transmittance of 62%. The optimized deposition condition was carried out by co-sputtering on heated substrates at 270°C. Thin films deposited under this optimized condition were applied for our perovskite solar cells, and demonstrated promising power conversion efficiency.

  14. Photoluminescence properties of ZnO thin films prepared by DC magnetron sputtering

    Institute of Scientific and Technical Information of China (English)

    YANG Bing-chu; LIU Xiao-yan; GAO Fei; MA Xue-long

    2008-01-01

    ZnO thin films were prepared by direct current(DC) reactive magnetron sputtering under different oxygen partial pressures.And then the samples were annealed in vacuum at 450 ℃. The effects of the oxygen partial pressures and the treatment of annealing in vacuum on the photoluminescence and the concentration of six intrinsic defects in ZnO thin films such as oxygen vacancy(Vo),zinc vacancy(VZn), antisite oxygen(OZn), antisite zinc(ZnO), interstitial oxygen(Oi) and interstitial zinc(Zni) were studied. The results show that a green photoluminescence peak at 520 nm can be observed in all the samples, whose intensity increases with increasing oxygen partial pressure; for the sample annealed in vacuum, the intensity of the green peak increases as well. The green photoluminescence peak observed in ZnO may be attributed to zinc vacancy, which probably originates from transitions between electrons in the conduction band and zinc vacancy levels, or from transitions between electrons in zinc vacancy levels and up valence band.

  15. Synthesis of Tantalum-Doped Tin Oxide Thin Films by Magnetron Sputtering for Photovoltaic Applications

    Science.gov (United States)

    Nguyen, Ngoc Minh; Luu, Manh Quynh; Nguyen, Minh Hieu; Nguyen, Duy Thien; Bui, Van Diep; Truong, Thanh Tu; Pham, Van Thanh; Nguyen-Tran, Thuat

    2017-01-01

    Tantalum-doped tin oxide transparent conductive thin films were deposited on glass substrates by radio frequency and direct current reactive magnetron co-sputtering methods in an argon and oxygen environment. Optimization of the thin films for photovoltaic applications was performed using a dimensionless figure of merit by combining electrical and transparency properties. The optimized thin film showed a weight-averaged transmittance of 83%, a band gap value of 3.2 eV, resistivity of 5.2 × 10-3 Ω cm, and bulk carrier concentration of 1.2 × 1020 cm-3. The lowest resistivity among all films was 2.1 × 10-3 Ω cm, corresponding to a weight-averaged transmittance of 62%. The optimized deposition condition was carried out by co-sputtering on heated substrates at 270°C. Thin films deposited under this optimized condition were applied for our perovskite solar cells, and demonstrated promising power conversion efficiency.

  16. Studies on Magnetron Sputtered ZnO-Ag Films: Adhesion Activity of S. aureus

    Science.gov (United States)

    Geetha, S. R.; Dhivya, P.; Raj, P. Deepak; Sridharan, M.; Princy, S. Adline

    Zinc oxide (ZnO) thin films have been deposited onto thoroughly cleaned stainless steel (AISI SS 304) substrates by reactive direct current (dc) magnetron sputtering and the films were doped with silver (Ag). The prepared thin films were analyzed using X-ray diffraction (XRD), field emission-scanning electron microscopy (FE-SEM) to investigate the structural and morphological properties. The thickness values of the films were in the range of 194 to 256nm. XRD results revealed that the films were crystalline with preferred (002) orientation. Grain size values of pure ZnO films were found to be 19.82-23.72nm. On introducing Ag into ZnO film, the micro-structural properties varied. Adhesion test was carried out with Staphylococcus aureus (S. aureus) in order to know the adherence property of the deposited films. Colony formation units (CFU) were counted manually and bacterial adhesion inhibition (BAI) was calculated. We observed a decrease in the CFU on doping Ag in the ZnO films. BAI of the film deposited at - 100 V substrate bias was found to be increased on Ag doping from 69 to 88%.

  17. Direct current electrical fields induce apoptosis in oral mucosa cancer cells by NADPH oxidase-derived reactive oxygen species.

    Science.gov (United States)

    Wartenberg, Maria; Wirtz, Nina; Grob, Alexander; Niedermeier, Wilhelm; Hescheler, Jürgen; Peters, Saskia C; Sauer, Heinrich

    2008-01-01

    The presence of more than one dental alloy in the oral cavity often causes pathological galvanic currents and voltage resulting in superficial erosions of the oral mucosa and eventually in the emergence of oral cancer. In the present study the mechanisms of apoptosis of oral mucosa cancer cells in response to electromagnetic fields was investigated. Direct current (DC) electrical fields with field strengths between 2 and 16 V/m, applied for 24 h to UM-SCC-14-C oral mucosa cancer cells, dose-dependently resulted in decreased cell proliferation as evaluated by Ki-67 immunohistochemistry and upregulation of the cyclin-dependent kinase (CDK) inhibitors p21(cip1/waf1) and p27(kip1), which are associated with cell cycle arrest. Electrical field treatment (4 V/m, 24 h) increased apoptosis as evaluated by immunohistochemical analysis of cleaved caspase-3 and poly-(ADP-ribose)-polymerase-1 (PARP-1). Furthermore, robust reactive oxygen species (ROS) generation, increased expression of NADPH oxidase subunits as well as Hsp70 was observed. Electrical field treatment (4 V/m, 24 h) resulted in increased expression of Cu/Zn superoxide dismutase and decreased intracellular concentration of reduced glutathione (GSH), whereas the expression of catalase remained unchanged. Pre-treatment with the free radical scavenger N-acetyl cysteine (NAC) and the superoxide dismutase mimetic EUK-8 abolished caspase-3 and PARP-1 induction, suggesting that apoptosis in oral mucosa cancer cells is initated by ROS generation in response to DC electrical field treatment.

  18. Development of magnetron sputtering simulator with GPU parallel computing

    Science.gov (United States)

    Sohn, Ilyoup; Kim, Jihun; Bae, Junkyeong; Lee, Jinpil

    2014-12-01

    Sputtering devices are widely used in the semiconductor and display panel manufacturing process. Currently, a number of surface treatment applications using magnetron sputtering techniques are being used to improve the efficiency of the sputtering process, through the installation of magnets outside the vacuum chamber. Within the internal space of the low pressure chamber, plasma generated from the combination of a rarefied gas and an electric field is influenced interactively. Since the quality of the sputtering and deposition rate on the substrate is strongly dependent on the multi-physical phenomena of the plasma regime, numerical simulations using PIC-MCC (Particle In Cell, Monte Carlo Collision) should be employed to develop an efficient sputtering device. In this paper, the development of a magnetron sputtering simulator based on the PIC-MCC method and the associated numerical techniques are discussed. To solve the electric field equations in the 2-D Cartesian domain, a Poisson equation solver based on the FDM (Finite Differencing Method) is developed and coupled with the Monte Carlo Collision method to simulate the motion of gas particles influenced by an electric field. The magnetic field created from the permanent magnet installed outside the vacuum chamber is also numerically calculated using Biot-Savart's Law. All numerical methods employed in the present PIC code are validated by comparison with analytical and well-known commercial engineering software results, with all of the results showing good agreement. Finally, the developed PIC-MCC code is parallelized to be suitable for general purpose computing on graphics processing unit (GPGPU) acceleration, so as to reduce the large computation time which is generally required for particle simulations. The efficiency and accuracy of the GPGPU parallelized magnetron sputtering simulator are examined by comparison with the calculated results and computation times from the original serial code. It is found that

  19. Particle contamination formation and detection in magnetron sputtering processes

    Energy Technology Data Exchange (ETDEWEB)

    Selwyn, G.S. [Los Alamos National Lab., NM (United States); Weiss, C.A. [Materials Research Corp., Congers, NY (United States). Sputtering Systems Div.; Sequeda, F.; Huang, C. [Seagate Peripherals Disk Div., Milpitas, CA (United States)

    1996-10-01

    Defects caused by particulate contamination are an important concern in the fabrication of thin film products. Often, magnetron sputtering processes are used for this purpose. Particle contamination can cause electrical shorting, pin holes, problems with photolithography, adhesion failure, as well as visual and cosmetic defects. Particle contamination generated during thin film processing can be detected using laser light scattering, a powerful diagnostic technique that provides real-time, {ital in-situ} imaging of particles > 0.3 {mu}m in diameter. Using this technique, the causes, sources and influences on particles in plasma and non-plasma and non-plasma processes may be independently evaluated and corrected. Several studies employing laser light scattering have demonstrated both homogeneous and heterogeneous causes of particle contamination. In this paper, we demonstrate that the mechanisms for particle generation, transport and trapping during magnetron sputter deposition are different from the mechanisms reported in previously studied plasma etch processes. During magnetron sputter deposition, one source of particle contamination is linked to portions of the sputtering target surface exposed to weaker plasma density. In this region, film redeposition is followed by filament or nodule growth and enhanced trapping which increases filament growth. Eventually the filaments effectively ``short circuit`` the sheath, causing high currents to flow through these features. This, in turn, causes heating failure of the filament fracturing and ejecting the filaments into the plasma and onto the substrate. Evidence of this effect has been observed in semiconductor (IC) fabrication and storage disk manufacturing. Discovery of this mechanism in both technologies suggests that this mechanism may be universal to many sputtering processes.

  20. IR emission from the target during plasma magnetron sputter deposition

    Energy Technology Data Exchange (ETDEWEB)

    Cormier, P.-A. [GREMI, Université d' Orléans, 14 rue d' Issoudun, B.P. 6744, 45067 Orleans Cedex2 (France); Thomann, A.-L., E-mail: anne-lise.thomann@univ-orleans.fr [GREMI, Université d' Orléans, 14 rue d' Issoudun, B.P. 6744, 45067 Orleans Cedex2 (France); Dolique, V. [LMA, Université Claude Bernard Lyon I 7 Avenue Pierre de Coubertin, 69622 Villeurbanne Cedex (France); Balhamri, A. [ChIPS, Université de Mons, 20 Place du Parc, 7000 Mons (Belgium); Université Hassan 1, École Supérieure de Technologie, 218 Berrechid (Morocco); Dussart, R.; Semmar, N.; Lecas, T.; Brault, P. [GREMI, Université d' Orléans, 14 rue d' Issoudun, B.P. 6744, 45067 Orleans Cedex2 (France); Snyders, R. [ChIPS, Université de Mons, 20 Place du Parc, 7000 Mons (Belgium); Materia Nova R and D Center, Avenue Corpernic 1, Mons (Belgium); Konstantinidis, S. [Materia Nova R and D Center, Avenue Corpernic 1, Mons (Belgium)

    2013-10-31

    In this article, energy flux measurements at the substrate location are reported. In particular, the energy flux related to IR radiation emanating from the titanium (10 cm in diam.) target surface is quantified during magnetron sputter deposition processes. In order to modulate the plasma–target surface interaction and the radiative energy flux thereof, the working conditions were varied systematically. The experiments were performed in balanced and unbalanced magnetic field configurations with direct current (DC), pulsed DC and high power impulse magnetron sputtering (HiPIMS) discharges. The power delivered to the plasma was varied too, typically from 100 to 800 W. Our data show that the IR contribution to the total energy flux at the substrate increases with the supplied sputter power and as the discharge is driven in a pulse regime. In the case of HiPIMS discharge generated with a balanced magnetic field, the energy flux associated to the IR radiation produced by the target becomes comparable to the energy flux originating from collisional processes (interaction of plasma particles such as ions, electron, sputtered atoms etc. with the substrate). From IR contribution, it was possible to estimate the rise of the target surface temperature during the sputtering process. Typical values found for a titanium target are in the range 210 °C to 870 °C. - Highlights: • During magnetron sputtering process the heated target emits IR radiation. • We follow in real time the energy transferred to the deposited film by IR radiation. • IR radiation can be the main energy contribution in balanced pulsed processes. • IR radiation might affect the deposition process and the final film properties.

  1. The Development and Application of the Magnetron,

    Science.gov (United States)

    1982-03-31

    of *medicine. The power of the magnetron used is from several tens of watts to several hundred watts. Microwave physiotherapy has been used in...clinical practice for the fast cure of arthritis , rheumatism and the subsidence of swelling. Therapeutic results have been excellent. In recent years

  2. Plasma properties of RF magnetron sputtering system using Zn target

    Energy Technology Data Exchange (ETDEWEB)

    Nafarizal, N.; Andreas Albert, A. R.; Sharifah Amirah, A. S.; Salwa, O.; Riyaz Ahmad, M. A. [Microelectronic and Nanotechnology - Shamsuddin Research Centre (MiNT-SRC), Faculty of Electrical and Electronic Engineering, Universiti Tun Hussein Onn Malaysia 86400 Parit Raja, Batu Pahat, Johor (Malaysia)

    2012-06-29

    In the present work, we investigate the fundamental properties of magnetron sputtering plasma using Zn target and its deposited Zn thin film. The magnetron sputtering plasma was produced using radio frequency (RF) power supply and Argon (Ar) as ambient gas. A Langmuir probe was used to collect the current from the plasma and from the current intensity, we calculate the electron density and electron temperature. The properties of Zn sputtering plasma at various discharge conditions were studied. At the RF power ranging from 20 to 100 W and gas pressure 5 mTorr, we found that the electron temperature was almost unchanged between 2-2.5 eV. On the other hand, the electron temperature increased drastically from 6 Multiplication-Sign 10{sup 9} to 1 Multiplication-Sign 10{sup 10}cm{sup -3} when the discharge gas pressure increased from 5 to 10 mTorr. The electron microscope images show that the grain size of Zn thin film increase when the discharge power is increased. This may be due to the enhancement of plasma density and sputtered Zn density.

  3. Contact characterizations of ZrN thin films obtained by reactive sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Pelleg, J. [Department of Materials Engineering, Ben Gurion University of the Negev, 84105 Beer Sheva (Israel)]. E-mail: pelleg@bgumail.bgu.ac.il; Bibi, A. [Department of Materials Engineering, Ben Gurion University of the Negev, 84105 Beer Sheva (Israel); Sinder, M. [Department of Materials Engineering, Ben Gurion University of the Negev, 84105 Beer Sheva (Israel)

    2007-04-30

    The contact properties of ZrN {sub x} on p-type Si obtained by magnetron reactive sputtering were investigated. Schottky diode characteristics were observed as determined by forward current-voltage (I-V) and capacitance-voltage (C-V) measurements. The zero-bias barrier heights evaluated by I-V were in the range of 0.55-0.63 V, which is higher than the value of 0.53 V of as-deposited amorphous TiN.

  4. A comparison of the therapeutic and reactivating efficacy of newly developed bispyridinium compounds (K206, K269) with currently available oximes against tabun in rats and mice.

    Science.gov (United States)

    Kassa, Jiri; Karasova, Jana; Bajgar, Jiri; Kuca, Kamil; Musilek, Kamil

    2008-12-01

    The potency of newly developed bispyridinium compounds (K206, K269) in reactivating tabun-inhibited acetylcholinesterase and eliminating tabun-induced lethal toxic effects was compared with commonly used oximes (obidoxime, trimedoxime, the oxime HI-6) using in vivo methods. Studies which determined percentage of reactivation of tabun-inhibited blood and tissue AChE in poisoned rats showed that the reactivating efficacy of both newly developed oximes is comparable with obidoxime and trimedoxime in blood but lower than the reactivating potency of trimedoxime and obidoxime in the diaphragm and brain. Nevertheless, the differences in reactivating efficacy of obidoxime, trimedoxime and K206 was not significant while the potency of K269 to reactivate tabun-inhibited acetylcholinesterase was significantly lower. Both newly developed oximes were also found to be relatively efficacious in elimination of the lethal toxic effects in tabun-poisoned mice. Their therapeutic efficacy corresponds to the therapeutic potency of obidoxime. The oxime HI-6, relatively efficacious against soman, did not seem to be an adequately effective oxime in reactivation of tabun-inhibited AChE and to counteract lethal effects of tabun. Both newly developed oximes (K206, K269) are significantly more efficacious in reactivating tabun-inhibited AChE in rats and to eliminate lethal toxic effects of tabun in mice than the oxime HI-6 but their reactivating and therapeutic potency does not prevail over the effectiveness of currently available obidoxime and trimedoxime and, therefore, they are not suitable for their replacement of commonly used oximes for the treatment of acute tabun poisoning.

  5. Transcranial direct current stimulation of the prefrontal cortex reduces cue-reactivity in alcohol-dependent patients.

    Science.gov (United States)

    Wietschorke, Katharina; Lippold, Julian; Jacob, Christian; Polak, Thomas; Herrmann, Martin J

    2016-10-01

    Alcohol craving has been shown to be an important factor for relapses in alcohol-dependent patients. Furthermore, brain activity in reward-related areas in response to alcohol-related cues is positively related to the amount of post-relapse alcohol consumption. On the other hand, it has been shown that cue-exposure based extinction training (CET) leads to larger decrease of striatal and left dorsolateral prefrontal cortex (dLPFC) cue-induced activation compared to standard clinical day-care treatment, but the effect sizes are relatively small. The question of this study was, whether it is possible to change cue-reactivity and subjective craving by applying bilateral prefrontal transcranial direct current stimulation (tDCS). We stimulated 30 detoxified alcohol-dependent patients (50 % with a sham and 50 % with left cathodal/right anodal stimulation) and presented emotional as well as alcohol-related pictures. We measured the emotional startle modulation and found significantly increased startle amplitudes in the verum stimulation condition for alcohol-related cues, indicating a more negative processing of this cues in alcohol-dependent patients after verum tDCS stimulation. Additionally we found tendencies for stronger reduction in subjective craving in verum-stimulated patients. Therefore our study underscores the positive value of DCS in reducing craving and might help to improve the understanding and therapy of alcohol dependence.

  6. Annealing effects of sapphire substrate on properties of ZnO films grown by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Y.Z. [South China Normal University, School of Physics and Telecommunication Engineering, Guangzhou (China); Xu, J. [Chinese Academy of Sciences, Shanghai Institute of Optics and Fine Mechanics, P.O. Box 800-211, Shanghai (China)

    2007-09-15

    The annealing effects of sapphire substrates on the quality of epitaxial ZnO films grown by dc reactive magnetron sputtering were studied. The atomic steps formed on (0001) sapphire ({alpha}-Al{sub 2}O{sub 3}) substrates surface by annealing at high temperature were analyzed by atomic force microscopy. Their influence on the growth of ZnO films was examined by X-ray diffraction and photoluminescence measurements. Experimental results indicate that the film quality is strongly affected by annealing treatment of the sapphire substrate surface. The optimum annealing temperature of sapphire substrates for ZnO grown by magnetron sputtering is 1400 C for 1 h in air. (orig.)

  7. Colored and transparent oxide thin films prepared by magnetron sputtering: the glass blower approach.

    Science.gov (United States)

    Gil-Rostra, Jorge; Chaboy, Jesús; Yubero, Francisco; Vilajoana, Antoni; González-Elipe, Agustín R

    2013-03-01

    This work describes the reactive magnetron sputtering processing at room temperature of several mixed oxide MxSiyOz thin films (M: Fe, Ni, Co, Mo, W, Cu) intended for optical, coloring, and aesthetic applications. Specific colors can be selected by adjusting the plasma gas composition and the Si-M ratio in the magnetron target. The microstructure and chemistry of the films are characterized by a large variety of techniques including X-ray photoemission spectroscopy, X-ray absorption spectroscopy (XAS), and infrared spectroscopy, while their optical properties are characterized by UV-vis transmission and reflection analysis. Particularly, XAS analysis of the M cations in the amorphous thin films has provided valuable information about their chemical state and local structure. It is concluded that the M cations are randomly distributed within the SiO2 matrix and that both the M concentration and its chemical state are the key parameters to control the final color of the films.

  8. Thermoelectric properties of n-type Bi{sub 2}Te{sub 2.7}Se{sub 0.3} and p-type Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} thin films deposited by direct current magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Bourgault, D. [Schneider-Electric France, 38TEC/T1, 37 quai Paul Louis Merlin, 38050 Grenoble Cedex 9 (France); Institut Neel/Centre National de la Recherche Scientifique, 25 Avenue des Martyrs, BP 166, 38042 Grenoble Cedex 9 (France)], E-mail: daniel.bourgault@grenoble.cnrs.fr; Garampon, C. Giroud; Caillault, N.; Carbone, L.; Aymami, J.A. [Schneider-Electric France, 38TEC/T1, 37 quai Paul Louis Merlin, 38050 Grenoble Cedex 9 (France)

    2008-10-01

    n-type and p-type thermoelectric thin films have been deposited by direct current magnetron sputtering from n-type Bi{sub 2}Te{sub 2.7}Se{sub 0.3} and p-type Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} targets on glass and Al{sub 2}O{sub 3} substrates. X-ray diffraction and energy dispersive spectrometry combined with electrical measurements such as Seebeck coefficient and electrical resistivity were used for the thermoelectric thin films characterization. It was found that the composition of the sputtered thin films was close to the sputtering target stoichiometry for the tested deposition conditions and that the thin film composition did not seem to be the determinant parameter for the thermoelectrical properties. Indeed, the chamber pressure and plasma power have a greater influence on the thermoelectrical performances of the films. Annealing in Ar atmosphere (250 deg. C for n-type and 300 deg. C for p-type films) enhanced the film crystallization and yield power factors higher than 1 mW/K{sup 2} m.

  9. Recent Operation of the FNAL Magnetron H- Ion Source

    Energy Technology Data Exchange (ETDEWEB)

    Karns, Patrick R. [Fermilab; Bollinger, D. S. [Fermilab; Sosa, A. [Fermilab

    2016-09-06

    This paper will detail changes in the operational paradigm of the Fermi National Accelerator Laboratory (FNAL) magnetron H- ion source due to upgrades in the accelerator system. Prior to November of 2012 the H- ions for High Energy Physics (HEP) experiments were extracted at ~18 keV vertically downward into a 90 degree bending magnet and accelerated through a Cockcroft-Walton accelerating column to 750 keV. Following the upgrade in the fall of 2012 the H- ions are now directly extracted from a magnetron at 35 keV and accelerated to 750 keV by a Radio Frequency Quadrupole (RFQ). This change in extraction energy as well as the orientation of the ion source required not only a redesign of the ion source, but an updated understanding of its operation at these new values. Discussed in detail are the changes to the ion source timing, arc discharge current, hydrogen gas pressure, and cesium delivery system that were needed to maintain consistent operation at >99% uptime for HEP, with an increased ion source lifetime of over 9 months.

  10. Magnetron sputtered nanostructured cadmium oxide films for ammonia sensing

    Energy Technology Data Exchange (ETDEWEB)

    Dhivya, P. [Functional Nanomaterials and Devices Lab, Centre for Nanotechnology and Advanced Biomaterials and School of Electrical and Electronics Engineering, SASTRA University, Thanjavur-613 401 (India); Prasad, A.K. [Surface and Nanoscience Division, Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam-603 102 (India); Sridharan, M., E-mail: m.sridharan@ece.sastra.edu [Functional Nanomaterials and Devices Lab, Centre for Nanotechnology and Advanced Biomaterials and School of Electrical and Electronics Engineering, SASTRA University, Thanjavur-613 401 (India)

    2014-06-01

    Nanostructured cadmium oxide (CdO) films were deposited on to glass substrates by reactive dc magnetron sputtering technique. The depositions were carried out for different deposition times in order to obtain films with varying thicknesses. The CdO films were polycrystalline in nature with cubic structure showing preferred orientation in (1 1 1) direction as observed by X-ray diffraction (XRD). Field-emission scanning electron microscope (FE-SEM) micrographs showed uniform distribution of grains of 30–35 nm size and change in morphology from spherical to elliptical structures upon increasing the film thickness. The optical band gap value of the CdO films decreased from 2.67 to 2.36 eV with increase in the thickness. CdO films were deposited on to interdigitated electrodes to be employed as ammonia (NH{sub 3}) gas sensor. The fabricated CdO sensor with thickness of 294 nm has a capacity to detect NH{sub 3} as low as 50 ppm at a relatively low operating temperature of 150 °C with quick response and recovery time. - Highlights: • Nanostructured CdO films were deposited on to glass substrates using magnetron sputtering. • Deposition time was varied in order to obtain films with different thicknesses. • The CdO films were polycrystalline in nature with preferred orientation along (1 1 1) direction. • The optical bandgap values of the films decreased on increasing the thickness of the films. • CdO films with different thickness such as 122, 204, 294 nm was capable to detect NH{sub 3} down to 50 ppm at operating temperature of 150 °C.

  11. Spatiotemporal synchronization of drift waves in a magnetron sputtering plasma

    CERN Document Server

    Martines, E; Cavazzana, R; Adámek, J; Antoni, V; Serianni, G; Spolaore, M; Vianello, N

    2014-01-01

    A feedforward scheme is applied for drift waves control in a magnetized magnetron sputtering plasma. A system of driven electrodes collecting electron current in a limited region of the explored plasma is used to interact with unstable drift waves. Drift waves actually appear as electrostatic modes characterized by discrete wavelengths of the order of few centimeters and frequencies of about 100 kHz. The effect of external quasi-periodic, both in time and space, travelling perturbations is studied. Particular emphasis is given to the role played by the phase relation between the natural and the imposed fluctuations. It is observed that it is possible by means of localized electrodes, collecting currents which are negligible with respect to those flowing in the plasma, to transfer energy to one single mode and to reduce that associated to the others. Due to the weakness of the external action, only partial control has been achieved.

  12. Collimated Magnetron Sputter Deposition for Mirror Coatings

    DEFF Research Database (Denmark)

    Vickery, A.; Cooper-Jensen, Carsten P.; Christensen, Finn Erland

    2008-01-01

    At the Danish National Space Center (DNSC), a planar magnetron sputtering chamber has been established as a research and production coating facility for curved X-ray mirrors for hard X-ray optics for astronomical X-ray telescopes. In the following, we present experimental evidence that a collimat......At the Danish National Space Center (DNSC), a planar magnetron sputtering chamber has been established as a research and production coating facility for curved X-ray mirrors for hard X-ray optics for astronomical X-ray telescopes. In the following, we present experimental evidence...... that a collimation of the sputtered particles is an efficient way to suppress the interfacial roughness of the produced multilayer. We present two different types of collimation optimized for the production of low roughness curved mirrors and flat mirrors, respectively....

  13. Early cytomegalovirus reactivation remains associated with increased transplant-related mortality in the current era : a CIBMTR analysis

    NARCIS (Netherlands)

    Teira, Pierre; Battiwalla, Minoo; Ramanathan, Muthalagu; Barrett, A John; Ahn, Kwang Woo; Chen, Min; Green, Jaime S; Saad, Ayman; Antin, Joseph H; Savani, Bipin N; Lazarus, Hillard M; Seftel, Matthew; Saber, Wael; Marks, David; Aljurf, Mahmoud; Norkin, Maxim; Wingard, John R; Lindemans, Caroline A; Boeckh, Michael; Riches, Marcie L; Auletta, Jeffery J

    2016-01-01

    Single-center studies have reported an association between early (before day 100) cytomegalovirus (CMV) reactivation and decreased incidence of relapse for acute myeloid leukemia (AML) following allogeneic hematopoietic cell transplantation. To substantiate these preliminary findings, the Center for

  14. Early cytomegalovirus reactivation remains associated with increased transplant-related mortality in the current era : a CIBMTR analysis

    NARCIS (Netherlands)

    Teira, Pierre; Battiwalla, Minoo; Ramanathan, Muthalagu; Barrett, A John; Ahn, Kwang Woo; Chen, Min; Green, Jaime S; Saad, Ayman; Antin, Joseph H; Savani, Bipin N; Lazarus, Hillard M; Seftel, Matthew; Saber, Wael; Marks, David; Aljurf, Mahmoud; Norkin, Maxim; Wingard, John R; Lindemans, Caroline A; Boeckh, Michael; Riches, Marcie L; Auletta, Jeffery J

    2016-01-01

    Single-center studies have reported an association between early (before day 100) cytomegalovirus (CMV) reactivation and decreased incidence of relapse for acute myeloid leukemia (AML) following allogeneic hematopoietic cell transplantation. To substantiate these preliminary findings, the Center for

  15. Physicochemical model for reactive sputtering of hot target

    Science.gov (United States)

    Shapovalov, Viktor I.; Karzin, Vitaliy V.; Bondarenko, Anastasia S.

    2017-02-01

    A physicochemical model for reactive magnetron sputtering of a metal target is described in this paper. The target temperature in the model is defined as a function of the ion current density. Synthesis of the coating occurs due to the surface chemical reaction. The law of mass action, the Langmuir isotherm and the Arrhenius equation for non-isothermal conditions were used for mathematical description of the reaction. The model takes into consideration thermal electron emission and evaporation of the target surface. The system of eight algebraic equations, describing the model, was solved for the tantalum target sputtered in the oxygen environment. It was established that the hysteresis effect disappears with the increase of the ion current density.

  16. Method and apparatus for improved high power impulse magnetron sputtering

    Science.gov (United States)

    Anders, Andre

    2013-11-05

    A high power impulse magnetron sputtering apparatus and method using a vacuum chamber with a magnetron target and a substrate positioned in the vacuum chamber. A field coil being positioned between the magnetron target and substrate, and a pulsed power supply and/or a coil bias power supply connected to the field coil. The pulsed power supply connected to the field coil, and the pulsed power supply outputting power pulse widths of greater that 100 .mu.s.

  17. A high power impulse magnetron sputtering model to explain high deposition rate magnetic field configurations

    Science.gov (United States)

    Raman, Priya; Weberski, Justin; Cheng, Matthew; Shchelkanov, Ivan; Ruzic, David N.

    2016-10-01

    High Power Impulse Magnetron Sputtering (HiPIMS) is one of the recent developments in the field of magnetron sputtering technology that is capable of producing high performance, high quality thin films. Commercial implementation of HiPIMS technology has been a huge challenge due to its lower deposition rates compared to direct current Magnetron Sputtering. The cylindrically symmetric "TriPack" magnet pack for a 10 cm sputter magnetron that was developed at the Center for Plasma Material Interactions was able to produce higher deposition rates in HiPIMS compared to conventional pack HiPIMS for the same average power. The "TriPack" magnet pack in HiPIMS produces superior substrate uniformity without the need of substrate rotation in addition to producing higher metal ion fraction to the substrate when compared to the conventional pack HiPIMS [Raman et al., Surf. Coat. Technol. 293, 10 (2016)]. The films that are deposited using the "TriPack" magnet pack have much smaller grains compared to conventional pack DC and HiPIMS films. In this paper, the reasons behind the observed increase in HiPIMS deposition rates from the TriPack magnet pack along with a modified particle flux model is discussed.

  18. Fabrication and characterization of anatase/rutile–TiO2 thin films by magnetron sputtering: a review

    Directory of Open Access Journals (Sweden)

    Sakae Tanemura, Lei Miao, Wilfried Wunderlich, Masaki Tanemura, Yukimasa Mori, Shoichi Toh and Kenji Kaneko

    2005-01-01

    Full Text Available This review article summarizes briefly some important achievements of our recent reserach on anatase and/or rutile TiO2 thin films, fabricated by helicon RF magnetron sputtering, with good crystal quality and high density, and gives the-state-of-the-art of the knowledge on systematic interrelationship for fabrication conditions, crystal structure, composition, optical properties, and bactericidal abilities, and on the effective surface treatment to improve the optical reactivity of the obtained films.

  19. Magnetron sputtered gadolinia-doped ceria diffusion barriers for metal-supported solid oxide fuel cells

    DEFF Research Database (Denmark)

    Sønderby, Steffen; Klemensø, Trine; Christensen, Bjarke H.

    2014-01-01

    Gadolinia-doped ceria (GDC) thin films are deposited by reactive magnetron sputtering in an industrial-scale setup and implemented as barrier layers between the cathode and electrolyte in metal-based solid oxide fuel cells consisting of a metal support, an electrolyte of ZrO2 co-doped with Sc2O3...... and substrate bias voltage. A GDC layer thickness of 0.6 μm is found to effectively block Sr diffusion when bias voltage and deposition temperature is tuned to promote dense coatings. The adatom mobility has a large influence on the film density. Low temperature and bias voltage result in underdense column...

  20. Ground state atomic oxygen in high-power impulse magnetron sputtering: a quantitative study

    Science.gov (United States)

    Britun, Nikolay; Belosludtsev, Alexandr; Silva, Tiago; Snyders, Rony

    2017-02-01

    The ground state density of oxygen atoms in reactive high-power impulse magnetron sputtering discharges has been studied quantitatively. Both time-resolved and space-resolved measurements were conducted. The measurements were performed using two-photon absorption laser-induced fluorescence (TALIF), and calibrated by optical emission actinometry with multiple Ar emission lines. The results clarify the dynamics of the O ground state atoms in the discharge afterglow significantly, including their propagation and fast decay after the plasma pulse, as well as the influence of gas pressure, O2 admixture, etc.

  1. Performance Characterization of a Solenoid-type Gas Valve for the H- Magnetron Source at FNAL

    Energy Technology Data Exchange (ETDEWEB)

    Sosa, A. [Fermilab; Bollinger, D. S. [Fermilab; Karns, P. R. [Fermilab

    2016-09-06

    The magnetron-style H- ion sources currently in operation at Fermilab use piezoelectric gas valves to function. This kind of gas valve is sensitive to small changes in ambient temperature, which affect the stability and performance of the ion source. This motivates the need to find an alternative way of feeding H2 gas into the source. A solenoid-type gas valve has been characterized in a dedicated off-line test stand to assess the feasibility of its use in the operational ion sources. H- ion beams have been extracted at 35 keV using this valve. In this study, the performance of the solenoid gas valve has been characterized measuring the beam current output of the magnetron source with respect to the voltage and pulse width of the signal applied to the gas valve.

  2. DEVICE FOR INVESTIGATION OF MAGNETRON AND PULSED-LASER PLASMA

    Directory of Open Access Journals (Sweden)

    A. P. Burmakov

    2012-01-01

    Full Text Available Various modifications of complex pulsed laser and magnetron deposition thin-film structures unit are presented. They include joint and separate variants of layer deposition. Unit realizes the plasma parameters control and enhances the possibility of laser-plasma and magnetron methods of coatings deposition.

  3. Coating metals on micropowders by magnetron sputtering

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    Magnetron sputtering was used to coat various metals on micropowder surfaces. By using this method, the fine particles are better dispersed and can therefore be coated more homogeneously. The micro-powders used include cenospheres from fly ash of coal-burning electric power plants (diameter 40-200 μm and particle density 0.7±0.1 g/cm3), as well as carborundum particles of different sizes. Aluminum, silver, copper, cobalt and nickel were used as the coating metals. Tests showed that the coated metal film was compact adhering tightly on the base powders, and the coated powders possess adequate flow properties.

  4. The influence of N2 flow rate on Ar and Ti Emission in high-pressure magnetron sputtering system plasma

    Science.gov (United States)

    How, Soo Ren; Nayan, Nafarizal; Lias, Jais

    2017-03-01

    For ionized physical vapor deposition (known as IPVD) technique, investigation on the ionization mechanism of titanium atoms is very important during the deposition of titanium nitride (TiN) thin film using reactive magnetron sputtering plasma. The introduction of nitrogen gas into the chamber discharge leads to modifications of plasma parameters and ionization mechanism of transition species. In this work, an investigation on the influence of nitrogen flow rate on spectrum properties of argon and titanium during the deposition process have been carried out. The experimental configuration consists of OES and structure of magnetron sputtering device with the turbo molecular pump. A high-pressure magnetron sputtering plasma was used as plasma discharge chamber with various flow rate of nitrogen gas. Optical emission spectroscopy (OES) measurements were employed as plasma diagnostics tool in magnetron sputtering plasma operated at relatively high pressure. OES is a non-invasive plasma diagnostics method and that can detect the atomic and ionic emission during plasma discharge. The flow rate of the Ar and N2 gas are controlled by mass flow controller. The changes of relative emission for both neutral and ionic of argon as well as titanium were observed using optical spectrometer when the nitrogen gas is introduced into the discharged chamber. We found that the titanium emission decreased very rapidly with the flow rate of nitrogen. In addition, the argon emission slightly decreased with the flow rate of nitrogen.

  5. Optical Properties of Magnetron sputtered Nickel Thin Films

    Science.gov (United States)

    Twagirayezu, Fidele; Geerts, Wilhelmus J.; Cui, Yubo

    2015-03-01

    The study of optical properties of Nickel (Ni) is important, given the pivotal role it plays in the semiconductor and nano-electronics technology. Ni films were made by DC and RF magnetron sputtering in an ATC Orion sputtering system of AJA on various substrates. The optical properties were studied ex situ by variable angle spectroscopic (220-1000 nm) ellipsometry at room temperature. The data were modeled and analyzed using the Woollam CompleteEase Software fitting ellipsometric and transmission data. Films sputtered at low pressure have optical properties similar to that of Palik. Films sputtered at higher pressure however have a lower refraction index and extinction coefficient. It is expected from our results that the density of the sputtered films can be determined from the ellipsometric quantities. Our experiments also revealed that Ni is susceptible to a slow oxidation changing its optical properties over the course of several weeks. The optical properties of the native oxide differ from those of reactive sputtered NiO similar as found by. Furthermore the oxidation process of our samples is characterized by at least two different time constants.

  6. Overview of Recent Studies and Design Changes for the FNAL Magnetron Ion Source

    Energy Technology Data Exchange (ETDEWEB)

    Bollinger, D. S. [Fermilab; Sosa, A. [Fermilab

    2016-09-06

    This paper will cover several studies and design changes that will eventually be implemented to the Fermi National Accelerator Laboratory (FNAL) magnetron ion source. The topics include tungsten cathode insert, solenoid gas valves, current controlled arc pulser, cesium boiler redesign, gas mixtures of hydrogen and nitrogen, and duty factor reduction. The studies were performed on the FNAL test stand described in [1], with the aim to improve source lifetime, stability, and reducing the amount of tuning needed.

  7. Reactivity to smoking- and food-related cues in currently dieting and non-dieting young women smokers.

    Science.gov (United States)

    Jenks, Rebecca A; Higgs, Suzanne

    2011-04-01

    There is some evidence to suggest that young women dieters who smoke experience greater cigarette cravings in the presence of food-related related cues. The aim of this experiment was to examine reactivity to both smoking-related and water cues by dieting and non-dieting women smokers in the presence or absence of food cues. Eighteen female undergraduates attended two sessions (food present and food absent). At each session, participants were presented with a cigarette and water cue in a counterbalanced order. Pre- and post-cue measures included the brief version of the Questionnaire for Smoking Urges, heart rate and self-reported mood. All smokers showed enhanced reactivity (increased craving and heart rate) to smoking versus water cues. For dieters there was a larger increase in cigarette craving and heart rate in response to the smoking-related cues in the presence of food compared with the absence of food, whereas for non-dieters there was a smaller increase in cigarette craving and heart rate in response to the smoking-related cues in the presence of food compared with the absence of food. Mood and appetite ratings were not significantly affected by either cue type or session. The results suggest that cue reactivity to smoking-related cues is modulated by the presence of incentive stimuli relevant to the individual.

  8. Influence and determinative factors of ion-to-atom arrival ratio in unbalanced magnetron sputtering systems

    Institute of Scientific and Technical Information of China (English)

    2008-01-01

    Low pressure sputtering with a controlled ratio of ion flux to deposited atom flux at the condensing surface is one of the main directions of development of magnetron sputtering methods.Unbalanced magnetron sputtering,by producing dense secondary plasma around the substrate,provides a high ion current density.The closed-field unbalanced magnetron sputtering system (CFUBMS) has been established as a versatile technique for high-rate deposition high-quality metal,alloy,and ceramic thin films.The key factor in the CFUBMS system is the ability to transport high ion currents to the substrate,which can enhance the formation of full dense coatings at relatively low value homologous temperature.The investigation shows that the energy of ions incidenced at the substrate and the ratio of the flux of these ions to the flux of condensing atoms are the fundamental parameters in determining the structure and properties of films produced by ion-assisted deposition processes.Increasing ion bombardment during deposition combined with increasing mobility of the condensing atoms favors the formation of a dense microstructure and a smooth surface.

  9. Dynamic magnetron sputter process for front metallisation of crystalline silicon solar cells; Dynamisches Magnetron-Sputterverfahren zur Vorderseitenmetallisierung kristalliner Silicium-Solarzellen

    Energy Technology Data Exchange (ETDEWEB)

    Reinwand, Dirk

    2012-07-01

    An alternative high-efficiency front metallisation concept for industrial applications was to be developed. Development goals were, e.g., reduced shading and low contact resistance between the metal and semiconductor. Another advantage is the high flexibility with regard to metals, so that specific demands can be met (e.g. diffusion barrier, adhesive properties). Apart from various methods for characterisation of the layer properties (structure, layer thickness, resistance), also various aspects of energy influx into the substrate are discussed in detail. The generation of soft X-radiation by dynamic magnetron sputtering is investigated, and the existence of soft X-radiation could be proved for the first time using diode current measurement and flat field spectroscopy. Until recently, when SiO2 was used as passivation layer for solar cells, damage was attributed to short-wave radiation. Now, it could be proved that the SiO2 is damaged by the soft X-radiation observed. On the basis of the findings, the first high-efficiency solar cells with sputtered and galvanically reinforced front contacts were constructed. Efficiencies up to 21.1 % were obtained, which illustrates the high potential of the magnetron sputtering process for front metallisation of crystalline Si solar cells. [German] Diese Arbeit beschaeftigt sich mit dem dynamischen Magnetron-Sputterverfahren zur Vorderseitenmetallisierung kristalliner Silicium-Solarzellen. Hierbei sollte ein alternatives, industrietaugliches Vorderseitenmetallisierungskonzept mit hohem Wirkungsgradpotential entwickelt werden. Vorteile gegenueber der Siebdrucktechnologie (als Standardstandverfahren zur Vorderseiten-metallisierung fuer Industriesolarzellen) ergeben sich beispielsweise aus einer reduzierten Abschattung und geringen Kontaktwiderstaenden zwischen Metall und Halbleiter. Ein weiterer Vorteil bei der Verwendung der Kathodenzerstaeubung zur Abscheidung metallischer Schichten ist die hohe Flexibilitaet bezueglich der Wahl

  10. RF Magnetron Sputtering Aluminum Oxide Film for Surface Passivation on Crystalline Silicon Wafers

    Directory of Open Access Journals (Sweden)

    Siming Chen

    2013-01-01

    Full Text Available Aluminum oxide films were deposited on crystalline silicon substrates by reactive RF magnetron sputtering. The influences of the deposition parameters on the surface passivation, surface damage, optical properties, and composition of the films have been investigated. It is found that proper sputtering power and uniform magnetic field reduced the surface damage from the high-energy ion bombardment to the silicon wafers during the process and consequently decreased the interface trap density, resulting in the good surface passivation; relatively high refractive index of aluminum oxide film is benefic to improve the surface passivation. The negative-charged aluminum oxide film was then successfully prepared. The surface passivation performance was further improved after postannealing by formation of an SiOx interfacial layer. It is demonstrated that the reactive sputtering is an effective technique of fabricating aluminum oxide surface passivation film for low-cost high-efficiency crystalline silicon solar cells.

  11. Structural properties of RF-magnetron sputtered Cu{sub 2}O thin films

    Energy Technology Data Exchange (ETDEWEB)

    Azanza Ricardo, C.L.; D' Incau, M.; Leoni, M. [Department of Materials Engineering and Industrial Technologies, University of Trento, 38123 via Mesiano 77, Trento (Italy); Malerba, C. [ENEA, Casaccia Research Center, via Anguillarese 301, 00123 Roma (Italy); Department of Materials Engineering and Industrial Technologies, University of Trento, 38123 via Mesiano 77, Trento (Italy); Mittiga, A. [ENEA, Casaccia Research Center, via Anguillarese 301, 00123 Roma (Italy); Scardi, P., E-mail: Paolo.Scardi@unitn.it [Department of Materials Engineering and Industrial Technologies, University of Trento, 38123 via Mesiano 77, Trento (Italy)

    2011-10-31

    Cuprous oxide thin films were produced on soda-lime glass substrates using reactive RF-magnetron sputtering. The influence of deposition parameters and temperature on composition and structural properties of the single layers was extensively studied using X-ray diffraction. The control over microstructure and residual stresses is possible by changing reactive gas pressure and deposition temperature. Fiber textured Cu2O films showing a [100] preferred orientation and a fraction of untextured domains can be obtained: suitable modeling taking this microstructure into account shows the presence of a strong compressive stress decreasing with the temperature. Highly reproducible films can be obtained, whose microstructure is preserved when sputtering on tungsten and zinc oxide substrates.

  12. Unbalanced Cylindrical Magnetron for Accelerating Cavities Coating

    CERN Document Server

    Rosaz, Guillaume; Calatroni, Sergio; Sublet, Alban; Tobarelli, Mauro

    2016-01-01

    We report in this paper the design and qualification of a cylindrical unbalanced magnetron source. The dedicated magnetic assemblies were simulated using a finite element model. A hall-effect magnetic probe was then used to characterize those assemblies and compared to the theoretical magnet profiles. These show a good agreement between the expected and actual values. the qualification of the different magnetic assemblies was then performed by measuring the ion flux density reaching the surface of the sample to be coated using a commercial retarding field energy analyzer. The strongest unbalanced configuration shows an increase from 0.016A.cm^-2 to 0.074A.cm^-2 of the ion flux density reaching the sample surface compared to the standard balanced configuration for a pressure 5.10^-3 mbar and a plasma source power of 300W.

  13. A New Robust Decoupled Control of the Stator Active and Reactive Currents for Grid-Connected Doubly-Fed Induction Generators

    Directory of Open Access Journals (Sweden)

    Ahmad Bashar Ataji

    2016-03-01

    Full Text Available This paper addresses the grid-connected variable speed doubly-fed induction generator, and proposes a new decoupled control to replace the conventional decoupled active and reactive powers (P-Q control. The proposed decoupled control is based on decoupling the stator active and reactive currents, in contrast with the conventional decoupled P-Q control, which is based on decoupling the stator active and reactive powers by forcing the stator d- or q-voltage to zero. The proposed decoupled control has all the advantages of the conventional decoupled P-Q control such as constant switching frequency and robustness against slip angle inaccuracy, and it has some additional advantages: The proposed control requires less machine parameters; for the controller design, it requires the stator-to-rotor turns ratio only; for the online calculation, it does not requires any machine parameter. The proposed decoupled control is more flexible and robust since the control is independent of the grid voltage orientation. It is robust against variation in the grid voltage amplitude. Several experiments are carried out using a 1.1 kW doubly-fed induction generator (DFIG, and the results support the proposed decoupled control and demonstrate some of its advantages.

  14. Discharge Physics of High Power Impulse Magnetron Sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Anders, Andre

    2010-10-13

    High power impulse magnetron sputtering (HIPIMS) is pulsed sputtering where the peak power exceeds the time-averaged power by typically two orders of magnitude. The peak power density, averaged over the target area, can reach or exceed 107 W/m2, leading to plasma conditions that make ionization of the sputtered atoms very likely. A brief review of HIPIMS operation is given in a tutorial manner, illustrated by some original data related to the self-sputtering of niobium in argon and krypton. Emphasis is put on the current-voltage-time relationships near the threshold of self-sputtering runaway. The great variety of current pulse shapes delivers clues on the very strong gas rarefaction, self-sputtering runaway conditions, and the stopping of runaway due to the evolution of atom ionization and ion return probabilities as the gas plasma is replaced by metal plasma. The discussions are completed by considering instabilities and the special case of ?gasless? self-sputtering.

  15. Estimation of Sputtering Damages on a Magnetron H- Ion Source Induced by Cs+ and H+ Ions

    CERN Document Server

    Pereira, H; Alessi, J; Kalvas, t

    2013-01-01

    An H− ion source is being developed for CERN’s Linac4 accelerator. A beam current requirement of 80 mA and a reliability above 99% during 1 year with 3 month uninterrupted operation periods are mandatory. To design a low-maintenance long life-time source, it is important to investigate and understand the wear mechanisms. A cesiated plasma discharge ion source, such as the BNL magnetron source, is a good candidate for the Linac4 ion source. However, in the magnetron source operated at BNL, the removal of material from the molybdenum cathode and the stainless steel anode cover plate surfaces is visible after extended operation periods. The observed sputtering traces are shown to result from cesium vapors and hydrogen gas ionized in the extraction region and subsequently accelerated by the extraction field. This paper presents a quantitative estimate of the ionization of cesium and hydrogen by the electron and H− beams in the extraction region of BNL’s magnetron ion source. The respective contributions o...

  16. Investigation of bunch repetition rate deviations in FIR FEL driven by a magnetron-based microtron

    CERN Document Server

    Kazakevitch, Grigori M; Lee Byung Cheol; Lee, J

    2002-01-01

    The stability of the bunch repetition rate in a FIR FEL driven by a 2.8 GHz magnetron-based microtron was investigated using a heterodyne method with a low Q-factor straight-flight measuring cavity. The measuring cavity is located in the straight section of the FIR FEL injection beam line and is excited by the passage of electron bunches. The RF signal from the measuring cavity coupling loop was mixed with a precise heterodyne signal with a frequency difference of several MHz. The beat frequency was analyzed to obtain the temporal distribution of the bunch repetition rate deviation during the macro pulse of the electron beam. The time resolution and the accuracy of measurements are approximately 100 ns and a few kHz, respectively. Based on this data, we could determine the level and shape of the magnetron current and the initial frequency shift between magnetron and accelerating cavity for the FEL operation in the wavelength range 100-300 microns.

  17. Deposition of thin titanium-copper films with antimicrobial effect by advanced magnetron sputtering methods

    Energy Technology Data Exchange (ETDEWEB)

    Stranak, V., E-mail: stranak@physik.uni-greifswald.de [University of Greifswald, Institute of Physics, Felix-Hausdorff Str. 6, 17489 Greifswald (Germany); Wulff, H. [University of Greifswald, Institute of Physics, Felix-Hausdorff Str. 6, 17489 Greifswald (Germany); Rebl, H. [University of Rostock, Biomedical Res. Center, Dept. of Cell Biology, Schillingallee 69, 18057 Rostock (Germany); Zietz, C. [University of Rostock, Dept. of Orthopaedics, Doberaner Str. 142, 18057 Rostock (Germany); Arndt, K. [University of Rostock, Dept. of Med. Microbiol., Virology and Hygiene, Schillingallee 70, 18057 Rostock (Germany); Bogdanowicz, R. [University of Greifswald, Institute of Physics, Felix-Hausdorff Str. 6, 17489 Greifswald (Germany); Nebe, B. [University of Rostock, Biomedical Res. Center, Dept. of Cell Biology, Schillingallee 69, 18057 Rostock (Germany); Bader, R. [University of Rostock, Dept. of Orthopaedics, Doberaner Str. 142, 18057 Rostock (Germany); Podbielski, A. [University of Rostock, Dept. of Med. Microbiol., Virology and Hygiene, Schillingallee 70, 18057 Rostock (Germany); Hubicka, Z. [Academy of Sciences of the Czech Republic, Institute of Physics, Na Slovance 2, 180 00 Prague (Czech Republic); Hippler, R. [University of Greifswald, Institute of Physics, Felix-Hausdorff Str. 6, 17489 Greifswald (Germany)

    2011-10-10

    The antibacterial effect of thin titanium-copper (Ti-Cu) films combined with sufficient growth of human osteoblastic cells is reported in the paper. Thin Ti-Cu films were prepared by three different plasma-assisted magnetron sputtering methods: direct current magnetron sputtering (dc-MS), dual magnetron sputtering (dual-MS) as well as dual high power impulse magnetron sputtering (dual-HiPIMS). The antimicrobial effect is caused by copper released from the metallic Ti-Cu films, which was measured by atomic absorption spectroscopy (AAS). The copper release is influenced by the chemical and physical properties of the deposited films and was investigated by X-ray diffractometry and X-ray reflectometry (GIXD and XR) techniques. It was found that, within the first 24 h the amount of Cu released from dual-HiPIMS films (about 250 {mu}g) was much higher than from dc-MS and dual-MS films. In vitro planktonic growth tests on Ti-Cu surfaces for Staphylococcus epidermidis and S. aureus demonstrated the killing of both bacteria using the Ti-Cu films prepared using the dual-HiPIMS technique. The killing effects on biofilm bacteria were less obvious. After the total release of copper from the Ti-Cu film the vitality of exposed human osteoblast MG-63 cells increased significantly. An initial cytotoxic effect followed by the growth of osteoblastic cells was demonstrated. The cytotoxic effect combined with growth of osteoblastic cells could be used in joint replacement surgery to reduce the possibility of infection and to increase adoption of the implants. Highlights: {yields} Ti-Cu films with significant cytotoxic effect were prepared by dual-HiPIMS technique. {yields} The cytotoxic effect is caused by total release of copper species from thin films. {yields} The copper release is influenced by crystallography and chemical properties of thin films. {yields} Sufficient growth of osteoblastic cells follows after copper release.

  18. Plasma potential of a moving ionization zone in DC magnetron sputtering

    Science.gov (United States)

    Panjan, Matjaž; Anders, André

    2017-02-01

    Using movable emissive and floating probes, we determined the plasma and floating potentials of an ionization zone (spoke) in a direct current magnetron sputtering discharge. Measurements were recorded in a space and time resolved manner, which allowed us to make a three-dimensional representation of the plasma potential. From this information we could derive the related electric field, space charge, and the related spatial distribution of electron heating. The data reveal the existence of strong electric fields parallel and perpendicular to the target surface. The largest E-fields result from a double layer structure at the leading edge of the ionization zone. We suggest that the double layer plays a crucial role in the energization of electrons since electrons can gain several 10 eV of energy when crossing the double layer. We find sustained coupling between the potential structure, electron heating, and excitation and ionization processes as electrons drift over the magnetron target. The brightest region of an ionization zone is present right after the potential jump, where drifting electrons arrive and where most local electron heating occurs. The ionization zone intensity decays as electrons continue to drift in the Ez × B direction, losing energy by inelastic collisions; electrons become energized again as they cross the potential jump. This results in the elongated, arrowhead-like shape of the ionization zone. The ionization zone moves in the -Ez × B direction from which the to-be-heated electrons arrive and into which the heating region expands; the zone motion is dictated by the force of the local electric field on the ions at the leading edge of the ionization zone. We hypothesize that electron heating caused by the potential jump and physical processes associated with the double layer also apply to magnetrons at higher discharge power, including high power impulse magnetron sputtering.

  19. 磁控管微波振荡%MAGNETRON MICROWAVE RESONANT

    Institute of Scientific and Technical Information of China (English)

    徐劳立; 刘宇星; 王越

    2015-01-01

    The magnetron is an efficient self‐oscillation device for transferring the alternating current electrical energy to microwave electromagnetic energy and being used extensively for radar ,navigation ,microwave ovens ,and etc .The construction of magnetron is simple while its working principle is complex ,which is involved with electric engineering ,high frequency electromagnetic field and complex motion of electrons bunches .The content herein sketches briefly the component construction of magnetron ,analysis method of operation mechanism , resonance frequency and the energy conversion during electrons motion .The starting of micro‐wave oscillation controlled by orthogonal static electromagnetic field is discussed and an analo‐gy is made between the resonance excitation of magnetron and a bow drawing across the strings of a violin .%磁控管是一种结构简单而效率较高的自振荡器件,可将输入的交流电电能转换为输出的微波电磁能,广泛应用于雷达、导航和微波加热。这一重要应用技术的工作原理较复杂,涉及电工技术、高频电磁场理论和复杂的电子运动,本文简述了磁控管的组成结构、分析方法、谐振频率和能量转换的过程,介绍了磁控管内电子的运动形态和典型速度,以及磁控管中的正交静态电磁场对磁控管建立微波振荡的作用,并在固有振荡的激励方面将磁控管与弓弦乐器做了类比。

  20. Surface passivation of gallium nitride by ultrathin RF-magnetron sputtered Al2O3 gate.

    Science.gov (United States)

    Quah, Hock Jin; Cheong, Kuan Yew

    2013-08-14

    An ultrathin RF-magnetron sputtered Al2O3 gate on GaN subjected to postdeposition annealing at 800 °C in O2 ambient was systematically investigated. A cross-sectional energy-filtered transmission electron microscopy revealed formation of crystalline Al2O3 gate, which was supported by X-ray diffraction analysis. Various current conduction mechanisms contributing to leakage current of the investigated sample were discussed and correlated with metal-oxide-semiconductor characteristics of this sample.

  1. Physicochemical model for reactive sputtering of hot target

    Energy Technology Data Exchange (ETDEWEB)

    Shapovalov, Viktor I., E-mail: vishapovalov@mail.ru; Karzin, Vitaliy V.; Bondarenko, Anastasia S.

    2017-02-05

    A physicochemical model for reactive magnetron sputtering of a metal target is described in this paper. The target temperature in the model is defined as a function of the ion current density. Synthesis of the coating occurs due to the surface chemical reaction. The law of mass action, the Langmuir isotherm and the Arrhenius equation for non-isothermal conditions were used for mathematical description of the reaction. The model takes into consideration thermal electron emission and evaporation of the target surface. The system of eight algebraic equations, describing the model, was solved for the tantalum target sputtered in the oxygen environment. It was established that the hysteresis effect disappears with the increase of the ion current density. - Highlights: • When model is applied for a cold target, hysteresis width is proportional to the ion current density. • Two types of processes of hot target sputtering are possible, depending on the current density: with and without the hysteresis. • Sputtering process is dominant at current densities less than 50 A/m{sup 2} and evaporation can be neglected. • For current densities over 50 A/m{sup 2} the hysteresis width reaches its maximum and the role of evaporation increases.

  2. Structure dependent resistivity and dielectric characteristics of tantalum oxynitride thin films produced by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Cristea, D., E-mail: daniel.cristea@unitbv.ro [Department of Materials Science, Transilvania University, 500036 Brasov (Romania); Crisan, A. [Department of Materials Science, Transilvania University, 500036 Brasov (Romania); Cretu, N. [Electrical Engineering and Applied Physics Department, Transilvania University, 500036 Brasov (Romania); Borges, J. [Centro de Física, Universidade do Minho, Campus de Gualtar, 4710 - 057 Braga (Portugal); Instituto Pedro Nunes, Laboratório de Ensaios, Desgaste e Materiais, Rua Pedro Nunes, 3030-199 Coimbra (Portugal); SEG-CEMUC, Mechanical Engineering Department, University of Coimbra, 3030-788 Coimbra (Portugal); Lopes, C.; Cunha, L. [Centro de Física, Universidade do Minho, Campus de Gualtar, 4710 - 057 Braga (Portugal); Ion, V.; Dinescu, M. [National Institute for Lasers, Plasma and Radiation Physics, Lasers Department, “Photonic Processing of Advanced Materials” Group, PO Box MG-16, RO 77125 Magurele-Bucharest (Romania); Barradas, N.P. [Centro de Ciências e Tecnologias Nucleares, Instituto Superior Técnico, Universidade de Lisboa, E.N. 10 ao km 139,7, 2695-066 Bobadela LRS (Portugal); Alves, E. [Instituto de Plasmas e Fusão Nuclear, Instituto Superior Técnico, Universidade de Lisboa, E.N. 10 ao km 139,7, 2695-066 Bobadela LRS (Portugal); Apreutesei, M. [MATEIS Laboratory-INSA de Lyon, 21 Avenue Jean Capelle, 69621 Villeurbanne cedex (France); Université de Lyon, Institut des Nanotechnologies de Lyon INL-UMR5270, CNRS, Ecole Centrale de Lyon, Ecully F-69134 (France); Munteanu, D. [Department of Materials Science, Transilvania University, 500036 Brasov (Romania)

    2015-11-01

    Highlights: • Tantalum oxynitride thin films have been deposited by magnetron sputtering, in various configurations. • The rising of the reactive gases mixture flow has the consequence of a gradual increase in the non-metallic content in the films, which results in a 10 orders of magnitude resistivity domain. • The higher resistivity films exhibit dielectric constants up to 41 and quality factors up to 70. - Abstract: The main purpose of this work is to present and to interpret the change of electrical properties of Ta{sub x}N{sub y}O{sub z} thin films, produced by DC reactive magnetron sputtering. Some parameters were varied during deposition: the flow of the reactive gases mixture (N{sub 2} and O{sub 2}, with a constant concentration ratio of 17:3); the substrate voltage bias (grounded, −50 V or −100 V) and the substrate (glass, (1 0 0) Si or high speed steel). The obtained films exhibit significant differences. The variation of the deposition parameters induces variations of the composition, microstructure and morphology. These differences cause variation of the electrical resistivity essentially correlated with the composition and structural changes. The gradual decrease of the Ta concentration in the films induces amorphization and causes a raise of the resistivity. The dielectric characteristics of some of the high resistance Ta{sub x}N{sub y}O{sub z} films were obtained in the samples with a capacitor-like design (deposited onto high speed steel, with gold pads deposited on the dielectric Ta{sub x}N{sub y}O{sub z} films). Some of these films exhibited dielectric constant values higher than those reported for other tantalum based dielectric films.

  3. Crystallographic properties of magnetron sputtered barium ferrite films

    Energy Technology Data Exchange (ETDEWEB)

    Capraro, S. [Laboratoire DIOM, University of Saint-Etienne, 23 rue Michelon, 42023 Saint-Etienne Cedex (France)]. E-mail: stephane.capraro@univ-st-etienne.fr; Berre, M. Le [LPM, UMR 5511, INSA Lyon, 7 av. Jean Capelle, 69621 Villeurbanne Cedex (France); Chatelon, J.P. [Laboratoire DIOM, University of Saint-Etienne, 23 rue Michelon, 42023 Saint-Etienne Cedex (France); Bayard, B. [Laboratoire DIOM, University of Saint-Etienne, 23 rue Michelon, 42023 Saint-Etienne Cedex (France); Joisten, H. [CEA-LETI, 17 rue des martyrs, 38041 Grenoble Cedex (France); Canut, C. [LPMCN, University Lyon I, 43 Bvd. du 11 novembre 1918, 69622 Villerbanne, Cedex (France); Barbier, D. [LPM, UMR 5511, INSA Lyon, 7 av. Jean Capelle, 69621 Villeurbanne Cedex (France); Rousseau, J.J. [Laboratoire DIOM, University of Saint-Etienne, 23 rue Michelon, 42023 Saint-Etienne Cedex (France)

    2004-09-15

    The development of devices combining a ferrite with a semiconductor chip is a major focus of current research. Barium hexaferrite (BaFe{sub 12}O{sub 19} or BaM) thick films are deposited here using a RF magnetron sputtering system. Films are amorphous and non magnetic after deposition. Post-deposition thermal annealing is employed to make the films crystallize. The effects of the substrate, thermal annealing process, thickness, substrate temperature on crystallographic properties and stoichiometry are studied using a X-ray diffractometry (XRD) and Rutherford back-scattering (RBS). The in-depth homogeneity of Ba, Fe and O is evaluated by secondary ion mass spectroscopy (SIMS). The study shows a good crystallization of BaM films and there is a preferential orientation among the crystallographic planes (1 0 1), (2 0 0), (2 0 3), (1 0 2), (1 1 0) and (2 0 5) when BaM films are prepared at low RF power and when the substrate is heated. For several elaboration parameters, grains size is in the range of 25 and 40 nm and BaM films are stoichiometric with regard to the target stoichiometry.

  4. A modified relativistic magnetron with TEM output mode

    Science.gov (United States)

    Shi, Di-Fu; Qian, Bao-Liang; Wang, Hong-Gang; Li, Wei; Ju, Jin-Chuan; Du, Guang-Xing

    2017-01-01

    A modified relativistic magnetron (RM) with TEM output mode is proposed. By setting the coupling slots at the bottom of the resonant cavities in the transmission region rather than in the interaction region, besides possessing the original RM's advantages of high power conversion efficiency and radiating the lowest order mode, the modified RM not only improves the compactness and miniaturization of the magnetic field system, which is beneficial to realize the RMs packed by a permanent magnet, but also improves the robustness of operating frequency to structural perturbations of the coupling slots, which contributes to optimize the RM performance by adjusting the coupling slot dimensions with a relatively stable operating frequency. In the three-dimensional particle-in-cell (PIC) simulation, the modified RM with a reduction of 27.2% in the weight of the coils, 35.8% in the occupied space of the coils, and 18.6% in the operating current, can output a relatively pure TEM mode, which has been demonstrated as the dominant output mode by simulation, corresponding to an output power of 495.0 MW and a power conversion efficiency of 56.4%, at the resonant frequency of 4.30 GHz. In addition, an output power of above 2 GW can also be obtained from the RM in simulations.

  5. Magnetron-sputtered coatings for titanium aluminide alloys

    Energy Technology Data Exchange (ETDEWEB)

    Godlewska, E.; Mitoraj, M.; Mania, R. [AGH-UST, Cracow (Poland). Faculty of Materials Science and Ceramics; Zimowski, S.; Kot, M. [AGH-UST, Cracow (Poland). Faculty of Mechanical Engineering and Robotics

    2010-07-01

    Third-generation titanium aluminide alloys fulfil major requirements as lightweight materials for structural applications at moderate temperatures and loads. They are known for attractive combination of physical, chemical and mechanical properties, e.g. low density, good oxidation resistance and strength. Still a lot of work is being done to develop protection systems enabling their use at temperatures exceeding current limit of about 600-650 C. The protection systems under investigation include thick thermal barriers similar to the state-of-the-art coatings for superalloys but also thin layers functioning as diffusion barriers for gases to prevent embrittlement. The paper presents investigations on surface modification of a ({alpha}+{gamma}{sub 2}) Ti-46-8Nb alloy by means of magnetron sputtering of two-component targets: Cr-0.5Si, Cr-5Si, CrSi{sub 2} and Ti-10Si. Targets were obtained from elemental powders by hot pressing. The properties of thus produced surface layers were evaluated on the basis of nanoindentation and scratch tests in the as-received condition and after exposure to air at elevated temperature. Surfaces and cross-sections of the oxidized specimens were examined by SEM, EDS and XRD/GID. (orig.)

  6. 3-D Printed High Power Microwave Magnetrons

    Science.gov (United States)

    Jordan, Nicholas; Greening, Geoffrey; Exelby, Steven; Gilgenbach, Ronald; Lau, Y. Y.; Hoff, Brad

    2015-11-01

    The size, weight, and power requirements of HPM systems are critical constraints on their viability, and can potentially be improved through the use of additive manufacturing techniques, which are rapidly increasing in capability and affordability. Recent experiments on the UM Recirculating Planar Magnetron (RPM), have explored the use of 3-D printed components in a HPM system. The system was driven by MELBA-C, a Marx-Abramyan system which delivers a -300 kV voltage pulse for 0.3-1.0 us, with a 0.15-0.3 T axial magnetic field applied by a pair of electromagnets. Anode blocks were printed from Water Shed XC 11122 photopolymer using a stereolithography process, and prepared with either a spray-coated or electroplated finish. Both manufacturing processes were compared against baseline data for a machined aluminum anode, noting any differences in power output, oscillation frequency, and mode stability. Evolution and durability of the 3-D printed structures were noted both visually and by tracking vacuum inventories via a residual gas analyzer. Research supported by AFOSR (grant #FA9550-15-1-0097) and AFRL.

  7. Highly adherent bioactive glass thin films synthetized by magnetron sputtering at low temperature.

    Science.gov (United States)

    Stan, G E; Pasuk, I; Husanu, M A; Enculescu, I; Pina, S; Lemos, A F; Tulyaganov, D U; El Mabrouk, K; Ferreira, J M F

    2011-12-01

    Thin (380-510 nm) films of a low silica content bioglass with MgO, B(2)O(3), and CaF(2) as additives were deposited at low-temperature (150°C) by radio-frequency magnetron sputtering onto titanium substrates. The influence of sputtering conditions on morphology, structure, composition, bonding strength and in vitro bioactivity of sputtered bioglass films was investigated. Excellent pull-out adherence (~73 MPa) was obtained when using a 0.3 Pa argon sputtering pressure (BG-a). The adherence declined (~46 MPa) upon increasing the working pressure to 0.4 Pa (BG-b) or when using a reactive gas mixture (~50 MPa). The SBF tests clearly demonstrated strong biomineralization features for all bioglass sputtered films. The biomineralization rate increased from BG-a to BG-b, and yet more for BG-c. A well-crystallized calcium hydrogen phosphate-like phase was observed after 3 and 15 days of immersion in SBF in all bioglass layers, which transformed monotonously into hydroxyapatite under prolonged SBF immersion. Alkali and alkali-earth salts (NaCl, KCl and CaCO(3)) were also found at the surface of samples soaked in SBF for 30 days. The study indicated that features such as composition, structure, adherence and bioactivity of bioglass films can be tailored simply by altering the magnetron sputtering working conditions, proving that this less explored technique is a promising alternative for preparing implant-type coatings.

  8. Structural Formation and Photocatalytic Activity of Magnetron Sputtered Titania and Doped-Titania Coatings

    Directory of Open Access Journals (Sweden)

    Peter J. Kelly

    2014-10-01

    Full Text Available Titania and doped-titania coatings can be deposited by a wide range of techniques; this paper will concentrate on magnetron sputtering techniques, including “conventional” reactive co-sputtering from multiple metal targets and the recently introduced high power impulse magnetron sputtering (HiPIMS. The latter has been shown to deliver a relatively low thermal flux to the substrate, whilst still allowing the direct deposition of crystalline titania coatings and, therefore, offers the potential to deposit photocatalytically active titania coatings directly onto thermally sensitive substrates. The deposition of coatings via these techniques will be discussed, as will the characterisation of the coatings by XRD, SEM, EDX, optical spectroscopy, etc. The assessment of photocatalytic activity and photoactivity through the decomposition of an organic dye (methylene blue, the inactivation of E. coli microorganisms and the measurement of water contact angles will be described. The impact of different deposition technologies, doping and co-doping strategies on coating structure and activity will be also considered.

  9. Codeposition of amorphous zinc tin oxide using high power impulse magnetron sputtering: characterisation and doping

    Science.gov (United States)

    Tran, H. N.; Mayes, E. L. H.; Murdoch, B. J.; McCulloch, D. G.; McKenzie, D. R.; Bilek, M. M. M.; Holland, A. S.; Partridge, J. G.

    2017-04-01

    Thin film zinc tin oxide (ZTO) has been energetically deposited at 100 °C using high power impulse magnetron sputtering (HiPIMS). Reactive co-deposition from Zn (HiPIMS mode) and Sn (DC magnetron sputtering mode) targets yielded a gradient in the Zn:Sn ratio across a 4-inch diameter sapphire substrate. The electrical and optical properties of the film were studied as a function of composition. As-deposited, the films were amorphous, transparent and semi-insulating. Hydrogen was introduced by post-deposition annealing (1 h, 500 °C, 100 mTorr H2) and resulted in significantly increased conductivity with no measurable structural alterations. After annealing, Hall effect measurements revealed n-type carrier concentrations of ∼1 × 1017 cm‑3 and mobilities of up to 13 cm2 V‑1 s–1. These characteristics are suitable for device applications and proved stable. X-ray photoelectron spectroscopy was used to explore the valence band structure and to show that downward surface band-bending resulted from OH attachment. The results suggest that HiPIMS can produce dense, high quality amorphous ZTO suitable for applications including transparent thin film transistors.

  10. A comparison of reactivating and therapeutic efficacy of the oxime K203 and its fluorinated analog (KR-22836) with currently available oximes (obidoxime, trimedoxime, HI-6) against tabun in rats and mice.

    Science.gov (United States)

    Kassa, Jiri; Karasova, Jana Zdarova; Caisberger, Filip; Musilek, Kamil; Kuca, Kamil; Jung, Young-Sik

    2010-08-01

    The potency of newly developed bispyridinium compound K203 and its fluorinated analog KR-22836 in reactivating tabun-inhibited acetylcholinesterase and reducing tabun-induced lethal toxic effects was compared with commonly used oximes (obidoxime, trimedoxime, the oxime HI-6) using in vivo methods. Studies determining the percentage of reactivation of tabun-inhibited blood and tissue acetylcholinesterase in rats showed that the reactivating efficacy of K203 is higher than the reactivating efficacy of its fluorinated analog KR-22836 as well as currently available oximes studied. The therapeutic efficacy of the oxime K203 and its fluorinated analog corresponds to their potency to reactivate tabun-inhibited acetylcholinesterase. According to the results, the oxime K203 is more suitable than KR-22836 for the replacement of commonly used oximes for the antidotal treatment of acute tabun poisoning due to its relatively high potency to counteract the acute toxicity of tabun.

  11. Involvement of reactive oxygen species and high-voltage-activated calcium currents in nanoparticle zinc oxide-induced cytotoxicity in vitro

    Energy Technology Data Exchange (ETDEWEB)

    Zhao Jingxia [Nankai University, College of Medicine (China); Yao Yang [Tianjin First Central Hospital (China); Liu Shichang [Nankai University, College of Medicine (China); Zhang Tao [Nankai University, College of Life Science (China); Ren Guogang [University of Hertfordshire, Science and Technology Research Institute (United Kingdom); Yang Zhuo, E-mail: zhuoyang@nankai.edu.cn [Nankai University, College of Medicine (China)

    2012-11-15

    This study was to determine the possible neurotoxicity and mechanisms underlying the effects of nano-ZnO with sizes of 20-80 nm on central nervous system (CNS). The cytotoxicity of nano-ZnO was investigated in PC12 cells. The viability of cells was observed by a 3-(4,5-dimethylthiazol-2-yl)-2,5-diphenyltetrazolium bromide (MTT) assay, and the generation of reactive oxygen species (ROS) for cells was evaluated by a fluorometry assay. The apoptosis of cells was detected and analyzed by flow cytometry. In addition, effects of nano-ZnO on the properties of high-voltage-activated (HVA) calcium currents were studied in acutely isolated rat hippocampal pyramidal neurons using the whole-cell patch clamp technique. The results of MTT assay showed that nano-ZnO (10{sup -4} g/mL) caused a significant decrease in cell viability (P < 0.05). Nano-ZnO induced intracellular accumulation of ROS and the apoptosis of PC12 cells with the increasing concentration of nano-ZnO in flow cytometric assay (P < 0.05). Further results of electrophysiological recording indicated that 10{sup -4} g/mL nano-ZnO first altered the current-voltage curve and the peak amplitudes of HVA calcium currents at 10 min of the recording, and the peak current amplitudes were increased significantly at the end of 30 min (P < 0.05). All these results suggested that the increase of intracellular ROS was one of potential mechanisms of cellular apoptosis induced by nano-ZnO. Nano-ZnO could cause the elevation of cytosolic calcium levels by enhancement of HVA calcium currents, which would increase the generation of intracellular ROS, and consequently promote the neuronal apoptosis.

  12. Particle beam experiments for the investigation of plasma-surface interactions: application to magnetron sputtering and polymer treatment

    CERN Document Server

    Corbella, Carles; Kreiter, Oliver; Arcos, Teresa de los; Benedikt, Jan; von Keudell, Achim

    2013-01-01

    A beam experiment is presented to study heterogeneous reactions relevant to plasma-surface interactions. Atom and ion beams are focused onto the sample to expose it to quantified beams of oxygen, nitrogen, hydrogen, noble gas ions and metal vapor. The heterogeneous surface processes are monitored in-situ and in real time by means of a quartz crystal microbalance (QCM) and Fourier transform infrared spectroscopy (FTIR). Two examples illustrate the capabilities of the particle beam setup: oxidation and nitriding of aluminum as a model of target poisoning during reactive magnetron sputtering, and plasma treatment of polymers (PET, PP).

  13. Growth and characterization of a-axis oriented Cr-doped AlN films by DC magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Panda, Padmalochan; Ramaseshan, R., E-mail: seshan@igcar.gov.in; Dash, S. [Materials Science Group, IGCAR, Kalpakkam, 603102 (India); Krishna, Nanda Gopala [Corrosion Science and Technology Group, IGCAR, Kalpakkam, 603102 (India)

    2016-05-23

    Wurtzite type Cr-doped AlN thin films were grown on Si (100) substrates using DC reactive magnetron sputtering with a function of N{sub 2} concentration (15 to 25%). Evolution of crystal structure of these films was studied by GIXRD where a-axis preferred orientation was observed. The electronic binding energy and concentration of Cr in these films were estimated by X-ray photoemission spectroscopy (XPS). We have observed indentation hardness (H{sub IT}) of around 28.2 GPa for a nitrogen concentration of 25%.

  14. RP and RQA Analysis for Floating Potential Fluctuations in a DC Magnetron Sputtering Plasma

    Science.gov (United States)

    Sabavath, Gopikishan; Banerjee, I.; Mahapatra, S. K.

    2016-04-01

    The nonlinear dynamics of a direct current magnetron sputtering plasma is visualized using recurrence plot (RP) technique. RP comprises the recurrence quantification analysis (RQA) which is an efficient method to observe critical regime transitions in dynamics. Further, RQA provides insight information about the system’s behavior. We observed the floating potential fluctuations of the plasma as a function of discharge voltage by using Langmuir probe. The system exhibits quasi-periodic-chaotic-quasi-periodic-chaotic transitions. These transitions are quantified from determinism, Lmax, and entropy of RQA. Statistical investigations like kurtosis and skewness also studied for these transitions which are in well agreement with RQA results.

  15. Determination of the deposition rate of DC magnetron sputtering in fabrication of X-ray supermirrors

    Institute of Scientific and Technical Information of China (English)

    Fengli Wang; Zhanshan Wang; Jingtao Zhu; Zhong Zhang; Wenjuan Wu; Shumin Zhang; Lingyan Chen

    2006-01-01

    @@ X-ray supermirror is a non-periodic multilayer structure,whose optical performance is greatly affected by the stability and accuracy of the deposition rate in the fabrication using the direct current (DC) magnetron sputtering.By considering the location-setting time of the substrate positioning above the sputtering target,the deposition rate can be accurately determined.Experimental results show that the optical performance of the supermirror is in agreement with the design aim,which indicates that the layer thickness is well controlled and coincides with the desired ones.

  16. Surface functionalization of nanostructured LaB6-coated Poly Trilobal fabric by magnetron sputtering

    Science.gov (United States)

    Wu, Yan; Zhang, Lin; Min, Guanghui; Yu, Huashun; Gao, Binghuan; Liu, Huihui; Xing, Shilong; Pang, Tao

    2016-10-01

    Nanostructured LaB6 films were deposited on flexible Poly Trilobal substrates (PET textiles) through direct current magnetron sputtering in order to broaden its applications and realize surface functionalization of polyester fabrics. Characterizations and performances were investigated by employing a scanning electron microscope (SEM), Fourier transformation infrared spectroscopy (FT-IR) and ultraviolet-visible (UV-vis) spectrophotometer. Ultraviolet Protection Factor (UPF) conducted by the integral conversion was employed to measure the ultraviolet protection ability. As expected, the growth of LaB6 film depending on the pressure variation enhanced UV-blocking ability (UPF rating at 30.17) and absorption intensity of the textiles.

  17. Structural, electrical, and optical properties of diamondlike carbon films deposited by dc magnetron sputtering

    Science.gov (United States)

    Broitman, E.; Lindquist, O. P. A.; Hellgren, N.; Hultman, L.; Holloway, B. C.

    2003-11-01

    The electrical and optical properties of diamondlike carbon films deposited by direct current magnetron sputtering on Si substrates at room temperature have been measured as a function of the ion energy (Eion) and ion-to-carbon flux (Jion/JC). The results show that, in the ranges of 5 eV<=Eion<=85 eV and 1.1<=Jion/JC<=6.8, the presence of defective graphite formed by subplanted C and Ar atoms, voids, and the surface roughness, are the dominant influences on the resistivity and optical absorption.

  18. Development of high-vacuum planar magnetron sputtering using an advanced magnetic field geometry

    Energy Technology Data Exchange (ETDEWEB)

    Ohno, Takahiro; Yagyu, Daisuke; Saito, Shigeru, E-mail: saito@ee.kagu.tus.ac.jp; Ohno, Yasunori; Itoh, Masatoshi; Uhara, Yoshio; Miura, Tsutomu [Department of Electrical Engineering, Faculty of Engineering, Tokyo University of Science, 6-3-1 Niijuku, Katsushika-ku, Tokyo 125-8585 (Japan); Nakano, Hirofumi [Ikazuti Ltd., 3-28-10 Kikunodai, Chofu, Tokyo 182-0007 (Japan)

    2015-11-15

    A permanent magnet in a new magnetic field geometry (namely, with the magnetization in the radial direction) was fabricated and used for high-vacuum planar magnetron sputtering using Penning discharge. Because of the development of this magnet, the discharge current and deposition rate were increased two to three times in comparison with the values attainable with a magnet in the conventional geometry. This improvement was because the available space for effective discharge of the energetic electrons for the ionization increased because the magnetic field distribution increased in both the axial and radial directions of discharge.

  19. Chemical Structure of Carbon Nitride Films Prepared by MW-ECR Plasma Enhanced Magnetron Sputtering

    Institute of Scientific and Technical Information of China (English)

    XUJun,GAOPeng; DINGWan-yu; LIXin; DENGXin-lu; DONGChuang

    2004-01-01

    Amorphous carbon nitride thin films were prepared by plasma-enhanced DC magnetron sputtering using twinned microwave electron cyclotron resonance plasma sources. Chemical structure of deposited films was investigated using X-ray photoelectron spectroscopy and Fourier transtorm infrared spectroscopy. The results indicate that the deposition rate is strongly affected by direct current bias, and the films are mainly composed of a single amorphous carbon nitride phase with N/C ratio close to C3N4, and the bonding is predominantly of C-N type.

  20. Ionic conductivity and thermal stability of magnetron-sputtered nanocrystalline yttria-stabilized zirconia

    DEFF Research Database (Denmark)

    Sillassen, M.; Eklund, P.; Sridharan, M.;

    2009-01-01

    Thermally stable, stoichiometric, cubic yttria-stabilized zirconia (YSZ) thin-film electrolytes have been synthesized by reactive pulsed dc magnetron sputtering from a Zr–Y (80/20 at. %) alloy target. Films deposited at floating potential had a texture. Single-line profile analysis of the 111 x.......5% at bias voltages of −175 and −200 V with additional incorporation of argon. The films were thermally stable; very limited grain coarsening was observed up to an annealing temperature of 800 °C. Temperature-dependent impedance spectroscopy analysis of the YSZ films with Ag electrodes showed that the in......-plane ionic conductivity was within one order of magnitude higher in films deposited with substrate bias corresponding to a decrease in grain size compared to films deposited at floating potential. This suggests that there is a significant contribution to the ionic conductivity from grain boundaries...

  1. ITO films for antireflective and antistatic tube coatings prepared by d.c. magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Loebl, H.P. [Philips Res. Labs., Aachen (Germany); Huppertz, M. [Philips Res. Labs., Aachen (Germany); Mergel, D. [University GH Essen, Fachbereich 7, Physik, D-45117, Essen (Germany)

    1996-07-01

    A reactive d.c. magnetron sputtering process with relatively high oxygen flow suitable for antireflective and antistatic (ARAS) coatings on display tubes is described. The sputtering conditions and their influence on optical, structural and electrical properties of indium tin oxide (ITO) films are discussed and compared with other ITO sputtering processes from a metallic target. Emphasis is placed on the relation between microstructure, defect structure and conductivity, and on the determination of the optimal process conditions for obtaining fine-grained films for optical applications that can withstand the 460 C heat treatment during tube assembly. As an example, a simple three-layer broadband ARAS coating is investigated, consisting of a transparent conductive ITO layer, a TiO{sub 2} layer and a SiO{sub 2} layer on top. (orig.)

  2. Photocatalytic degradation characteristic of amorphous TiO2-W thin films deposited by magnetron sputtering

    Institute of Scientific and Technical Information of China (English)

    HUANG Jia-mu; LI Yue-xia; ZHAO Guo-dong; CAI Xiao-ping

    2006-01-01

    TiO2-W films were deposited on the slides by reactive magnetron sputtering. Properties of the films were analyzed via AFM,XRD,XPS,STS,UV-Vis and ellipse polarization apparatus. The results show that TiO2-W films are amorphous. The AFM map reveals that the surface of the film is tough and porous. The experiments of decomposing methylene blue indicate that the thickness threshold on these films is 141 nm,at which the rate of photodegradation is 90% in 2 h. And when the thickness is over 141 nm,the rate of photodegradation does not increase any more. This result is completely different from that of crystalloid TiO2 thin film.

  3. Synthesis of ReN3 Thin Films by Magnetron Sputtering

    Directory of Open Access Journals (Sweden)

    G. Soto

    2014-01-01

    Full Text Available In this work ReNx films were prepared by reactive magnetron sputtering at room temperature and deposited on a silicon wafer. It was found that the diffractograms of the nitrogen-rich rhenium film are consistent with those produced by high-pressure high-temperature methods, under the assumption that the film is oriented on the substrate. Using density functional calculations it was found that the composition of this compound could be ReN3, instead of ReN2, as stated on previous works. The ReN3 compound fits in the Ama2 (40 orthorhombic space group, and due to the existence of N3 anions between Re layers it should be categorized as an azide. The material is exceptionally brittle and inherently unstable under indentation testing.

  4. Very low pressure high power impulse triggered magnetron sputtering

    Science.gov (United States)

    Anders, Andre; Andersson, Joakim

    2013-10-29

    A method and apparatus are described for very low pressure high powered magnetron sputtering of a coating onto a substrate. By the method of this invention, both substrate and coating target material are placed into an evacuable chamber, and the chamber pumped to vacuum. Thereafter a series of high impulse voltage pulses are applied to the target. Nearly simultaneously with each pulse, in one embodiment, a small cathodic arc source of the same material as the target is pulsed, triggering a plasma plume proximate to the surface of the target to thereby initiate the magnetron sputtering process. In another embodiment the plasma plume is generated using a pulsed laser aimed to strike an ablation target material positioned near the magnetron target surface.

  5. Effect of Argon/Oxygen Flow Rate Ratios on DC Magnetron Sputtered Nano Crystalline Zirconium Titanate Thin Films

    Science.gov (United States)

    Rani, D. Jhansi; Kumar, A. GuruSampath; Sarmash, T. Sofi; Chandra Babu Naidu, K.; Maddaiah, M.; Rao, T. Subba

    2016-06-01

    High transmitting, non absorbent, nano crystalline zirconium titanate (ZT) thin films suitable for anti reflection coatings (ARC) were deposited on to glass substrates by direct current (DC) magnetron reactive sputtering technique, under distinct Argon to Oxygen (Ar/O2) gas flow rate ratios of 31/1, 30/2, 29/3 and 28/4, with a net gas flow (Ar + O2) of 32sccm, at an optimum substrate temperature of 250°C. The influence of the gas mixture ratio on the film properties has been investigated by employing x-ray diffraction (XRD), ultra violet visible (UV-vis) spectroscopy, atomic force microscopy (AFM), energy dispersive x-ray analysis (EDX) and four point probe methods. The films showed a predominant peak at 30.85° with (111) orientation. The crystallite size reduced from 22.94 nm to 13.5 nm and the surface roughness increased from 11.53 nm to 50.58 nm with increase in oxygen content respectively. The films deposited at 31/1 and 30/2 showed almost similar chemical composition. Increased oxygen content results an increase in electrical resistivity from 3.59 × 103 to 2.1 × 106 Ωm. The film deposited at Ar/O2 of 28/4 exhibited higher average optical transmittance of 91%, but its refractive index is higher than that of what is required for ARC. The films deposited at 31/1 and 30/2 of Ar/O2 possess higher transmittance (low absorbance) apart from suitable refractive index. Thus, these films are preferable candidates for ARC.

  6. Mediation Role of C-Reactive Protein on the Association between Smoking Quantity and Type 2 Diabetes in Current Chinese Smokers

    Directory of Open Access Journals (Sweden)

    Dan Feng

    2014-01-01

    Full Text Available Objective. Previous studies have indicated that cigarette smokers are more likely to develop type 2 diabetes and that both smoking and type 2 diabetes are associated with C-reactive protein (CRP. This study examined whether CRP mediates the association between smoking quantity and type 2 diabetes. Methods. Nine hundred and eighty-four current Chinese smokers were selected from a community-based chronic disease survey conducted in Guangzhou and Zhuhai. Type 2 diabetes was defined according to the WHO 1999 criteria. CRP was measured with flow cytometry. Binary logistic regression was performed to assess the mediation. Results. A positive association was observed between smoking quantity and type 2 diabetes (P<0.05. After controlling for potential confounders, daily cigarette consumption was significantly associated with higher CRP levels. Current smokers with type 2 diabetes had higher CRP levels than smokers without type 2 diabetes. The association between the smoking quantity and type 2 diabetes was mediated by CRP, which accounted for 50.77% of the association. Conclusions. This study provides further evidence that smoking quantity is positively associated with type 2 diabetes and suggests that the association between smoking and type 2 diabetes might be mediated by CRP.

  7. Plasma diagnostics during magnetron sputtering of aluminum doped zinc oxide

    DEFF Research Database (Denmark)

    Stamate, Eugen; Crovetto, Andrea; Sanna, Simone

    2016-01-01

    Plasma parameters during magnetron sputtering of aluminum-doped zinc oxide are investigated with optical emission spectroscopy, electrostatic probes and mass spectrometry with the aim of understanding the role of negative ions of oxygen during the film growth and improving the uniformity of the f......Plasma parameters during magnetron sputtering of aluminum-doped zinc oxide are investigated with optical emission spectroscopy, electrostatic probes and mass spectrometry with the aim of understanding the role of negative ions of oxygen during the film growth and improving the uniformity...

  8. A comparison of the therapeutic and reactivating efficacy of newly developed oximes (K117, K127) and currently available oximes (obidoxime, trimedoxime, HI-6) in tabun-poisoned rats and mice.

    Science.gov (United States)

    Kassa, Jiri; Karasova, Jana; Musilek, Kamil; Kuca, Kamil; Jung, Young-Sik

    2008-01-01

    The potency of newly developed bispyridinium compounds (K117, K127) to reactivate tabun-inhibited acetylcholinesterase and reduce tabun-induced lethal toxic effects was compared with currently available oximes (obidoxime, trimedoxime, oxime HI-6) by using in vivo methods. A study that determined the percentage of reactivation of tabun-inhibited blood and tissue acetylcholinesterase in poisoned rats showed that the reactivating efficacy of newly developed oxime K127 is comparable with obidoxime and trimedoxime in blood but lower than the reactivating potency of trimedoxime and obidoxime in the diaphragm and brain. The potency of another newly developed K117 to reactivate tabun-inhibited acetylcholinesterase is comparable with obidoxime or trimedoxime in the diaphragm, but it is significantly lower than the reactivating potency of trimedoxime and obidoxime in the blood and brain. The oxime, K127, was also found to be relatively effective in reducing lethal toxic effects in tabun-poisoned mice. Its therapeutic efficacy is consistent with the therapeutic potency of obidoxime. On the other hand, the potency of the oxime, K117, to reduce acute toxicity of tabun is significantly lower compared to trimedoxime and obidoxime. The therapeutic efficacy of K117 and K127 corresponds to their potency to reactivate tabun-inhibited acetylcholinesterase, especially in the diaphragm and brain. Contrary to obidoxime and trimedoxime, the oxime, HI-6, is not an effective oxime in the reactivation of tabun-inhibited acetycholinesterase and in reducing the lethal effects of tabun. The reactivating and therapeutic potency of both newly developed oximes does not prevail over the effectiveness of currently available obidoxime and trimedoxime and, therefore, they are not suitable for their replacement of commonly used oximes for the treatment of acute tabun poisoning.

  9. Properties of Diamond-Like Carbon Films Synthesized by Dual-Target Unbalanced Magnetron Sputtering

    Institute of Scientific and Technical Information of China (English)

    LIU Cui; LI Guo-Qing; GOU Wei; MU Zong-Xin; ZHANG Cheng-Wu

    2004-01-01

    @@ Smooth, dense and uniform diamond-like carbon films (DLC films) for industrial applications have successfully been prepared by dual-target unbalanced magnetron sputtering and the DLC characteristics of the films are confirmed by Raman spectra. It is found that the sputtering current of target plays an important role in the DLC film deposition. Deposition rate of 3.5μm/h is obtained by using the sputtering current of 30 A. The friction coefficient of the films is 0.2-0.225 measured by using a pin-on-disc microtribometer. The structure of the films tends to have a growth of sp3 bonds content at high sputtering current. The compressive residual stress in the films increases with the increasing sputtering current of the target.

  10. A hybrid electron cyclotron resonance metal ion source with integrated sputter magnetron for the production of an intense Al{sup +} ion beam

    Energy Technology Data Exchange (ETDEWEB)

    Weichsel, T., E-mail: tim.weichsel@fep.fraunhofer.de; Hartung, U.; Kopte, T. [Fraunhofer Institute for Organic Electronics, Electron Beam and Plasma Technology FEP, 01277 Dresden (Germany); Zschornack, G. [Institute of Solid State Physics, Dresden University of Technology, 01062 Dresden, Germany and Helmholtz-Zentrum Dresden-Rossendorf e.V., Institute of Ion Beam Physics and Materials Research, Dresden (Germany); Kreller, M.; Philipp, A. [DREEBIT GmbH, 01900 Grossroehrsdorf (Germany)

    2015-09-15

    A metal ion source prototype has been developed: a combination of magnetron sputter technology with 2.45 GHz electron cyclotron resonance (ECR) ion source technology—a so called magnetron ECR ion source (MECRIS). An integrated ring-shaped sputter magnetron with an Al target is acting as a powerful metal atom supply in order to produce an intense current of singly charged metal ions. Preliminary experiments show that an Al{sup +} ion current with a density of 167 μA/cm{sup 2} is extracted from the source at an acceleration voltage of 27 kV. Spatially resolved double Langmuir probe measurements and optical emission spectroscopy were used to study the plasma states of the ion source: sputter magnetron, ECR, and MECRIS plasma. Electron density and temperature as well as Al atom density were determined as a function of microwave and sputter magnetron power. The effect of ECR heating is strongly pronounced in the center of the source. There the electron density is increased by one order of magnitude from 6 × 10{sup 9} cm{sup −3} to 6 × 10{sup 10} cm{sup −3} and the electron temperature is enhanced from about 5 eV to 12 eV, when the ECR plasma is ignited to the magnetron plasma. Operating the magnetron at constant power, it was observed that its discharge current is raised from 1.8 A to 4.8 A, when the ECR discharge was superimposed with a microwave power of 2 kW. At the same time, the discharge voltage decreased from about 560 V to 210 V, clearly indicating a higher plasma density of the MECRIS mode. The optical emission spectrum of the MECRIS plasma is dominated by lines of excited Al atoms and shows a significant contribution of lines arising from singly ionized Al. Plasma emission photography with a CCD camera was used to prove probe measurements and to identify separated plasma emission zones originating from the ECR and magnetron discharge.

  11. A comparison of reactivating efficacy of newly developed oximes (K074, K075) and currently available oximes (obidoxime, HI-6) in soman, cyclosarin and tabun-poisoned rats.

    Science.gov (United States)

    Kassa, Jiri; Jun, Daniel; Karasova, Jana; Bajgar, Jiri; Kuca, Kamil

    2008-09-25

    The potency of newly developed oximes (K074, K075) and commonly used oximes (obidoxime, HI-6) to reactivate nerve agent-inhibited acetylcholinesterase was evaluated in rats poisoned with soman, tabun or cyclosarin at a lethal dose corresponding to their LD(50) value. In vivo determined percentage of reactivation of soman-inhibited blood and brain acetylcholinesterase in poisoned rats showed that only the oxime HI-6 was able to reactivate soman-inhibited acetylcholinesterase in the peripheral (blood) as well as central (brain) compartment. In vivo determined percentage of reactivation of tabun-inhibited blood and brain acetylcholinesterase in poisoned rats showed that obidoxime is the most efficacious reactivator of tabun-inhibited acetylcholinesterase among studied oximes in the peripheral compartment (blood) while K074 seems to be the most efficacious reactivator of tabun-inhibited acetylcholinesterase among studied oximes in the central compartment (brain). In vivo determined percentage of reactivation of cyclosarin-inhibited blood and brain acetylcholinesterase in poisoned rats showed that HI-6 is the most efficacious reactivator of cyclosarin-inhibited acetylcholinesterase among studied oximes. Due to their reactivating effects, both newly developed K oximes can be considered to be promising oximes for the antidotal treatment of acute tabun poisonings while the oxime HI-6 is still the most promising oxime for the treatment of acute soman and cyclosarin poisonings.

  12. Production of carbon nanotubes by the magnetron DC sputtering method

    NARCIS (Netherlands)

    Antonenko, SV; Mal'tsev, SN

    2005-01-01

    Carbon films containing multiwall nanotubes were produced by the magnetron de sputtering method. A graphite disc with Y and Ni catalyst plates was used as a target. The structural and morphological properties of the films were investigated using a JEM 2000EXII transmission electron microscope. The f

  13. Variable Power, Short Microwave Pulses Generation using a CW Magnetron

    Directory of Open Access Journals (Sweden)

    CIUPA, R.

    2011-05-01

    Full Text Available Fine control of microwave power radiation in medical and scientific applications is a challenging task. Since a commercial Continuous Wave (CW magnetron is the most inexpensive microwave device available today on the market, it becomes the best candidate for a microwave power generator used in medical diathermy and hyperthermia treatments or high efficiency chemical reactions using microwave reactors as well. This article presents a new method for driving a CW magnetron with short pulses, using a modified commercial Zero Voltage Switching (ZVS inverter, software driven by a custom embedded system. The microwave power generator designed with this method can be programmed for output microwave pulses down to 1% of the magnetron's power and allows microwave low frequency pulse modulation in the range of human brain electrical activity, intended for medical applications. Microwave output power continuous control is also possible with the magnetron running in the oscillating area, using a dual frequency Pulse Width Modulation (PWM, where the low frequency PWM pulse is modulating a higher resonant frequency required by the ZVS inverter's transformer. The method presented allows a continuous control of both power and energy (duty-cycle at the inverter's output.

  14. Analysis of work and efficiency increase of of the ILUR-03 installation magnetron system for tubular specimens outer surface modification

    Science.gov (United States)

    Kalin, B. A.; Volkov, N. V.; Valikov, R. A.; Yashin, A. S.; Krivobokov, V. P.; Yanin, S. N.; Yuriev, Yu N.

    2017-05-01

    The method of material near-surface layers doping by mixing of alloying elements films with ion beam is widely used in science and technology. Three magnetrons with independent power systems, integrated in installation for ion-beam treatment of long-range products ILUR-03, were used as deposition systems. Targets for magnetrons were in the form of disks 60 mm diameter and 5 mm thickness and consisted of the following elements: Al, Fe, Mo, Zr, Cr of purity better than 99.99 at.%. Deposition was performed in argon atmosphere at 1-5 Pa pressure and room temperature in stable current mode at 30-100 mA. Analysis of the obtained films on the surface of cylindrical specimens from zirconium alloys with the outer diameter of 9.15 mm showed high uniformity of coating on length of 300 mm, good adhesion and absence of discontinuities in the films body.

  15. Psychophysiological reactivity of currently dental phobic-, remitted dental phobic- and never-dental phobic individuals during exposure to dental-related and other affect-inducing materials.

    Science.gov (United States)

    Wannemueller, André; Adolph, Dirk; Joehren, Hans-Peter; Blackwell, Simon E; Margraf, Jürgen

    2017-03-01

    Psychophysiological responses indicating the preparation of defensive behaviour, such as heart rate (HR)-increase and startle-response (SR) potentiation, have often been reported amongst individuals suffering from phobic disorders when exposed to phobia-related information. Although exposure is widely considered the 'gold standard' for treatment of Specific Phobia, it is unclear to what extent psychophysiological defensive response patterns change following treatment, and whether any changes are maintained. We assessed the acoustic SR- and HR-response to neutral, positive, negative and phobia-related pictures and sounds in 41 individuals currently suffering from dental phobia, 22 formerly dental phobic individuals who had remitted following an exposure-based treatment eight months prior to assessment, and 29 control individuals with no history of dental phobia. We observed SR-potentiation to dental-related stimuli in controls combined with HR-deceleration. In contrast, amongst phobic individuals SR-potentiation was accompanied by HR-acceleration to dental pictures. Successfully treated individuals showed inhibited startle reactivity in combination with HR-deceleration to dental related materials of both modalities. Our findings suggest inappropriate fight-flight preparation amongst individuals with dental phobia, reflecting overactivation of the defensive system. However, successful treatment results in inhibited physiological defence preparation, with remitted individuals displaying a response pattern that differed from that of phobic individuals and controls.

  16. Modeling and experimental studies of a side band power re-injection locked magnetron

    Science.gov (United States)

    Ye, Wen-Jun; Zhang, Yi; Yuan, Ping; Zhu, Hua-Cheng; Huang, Ka-Ma; Yang, Yang

    2016-12-01

    A side band power re-injection locked (SBPRIL) magnetron is presented in this paper. A tuning stub is placed between the external injection locked (EIL) magnetron and the circulator. Side band power of the EIL magnetron is reflected back to the magnetron. The reflected side band power is reused and pulled back to the central frequency. A phase-locking model is developed from circuit theory to explain the process of reuse of side band power in SBPRIL magnetron. Theoretical analysis proves that the side band power is pulled back to the central frequency of the SBPRIL magnetron, then the amplitude of the RF voltage increases and the phase noise performance is improved. Particle-in-cell (PIC) simulation of a 10-vane continuous wave (CW) magnetron model is presented. Computer simulation predicts that the frequency spectrum’s peak of the SBPRIL magnetron has an increase of 3.25 dB compared with the free running magnetron. The phase noise performance at the side band offset reduces 12.05 dB for the SBPRIL magnetron. Besides, the SBPRIL magnetron experiment is presented. Experimental results show that the spectrum peak rises by 14.29% for SBPRIL magnetron compared with the free running magnetron. The phase noise reduces more than 25 dB at 45-kHz offset compared with the free running magnetron. Project supported by the National Basic Research Program of China (Grant No. 2013CB328902) and the National Natural Science Foundation of China (Grant No. 61501311).

  17. Experiments on a relativistic magnetron driven by a microsecond electron beam accelerator with a ceramic insulating stack

    Science.gov (United States)

    Lopez, Mike Rodriguez

    2003-10-01

    Relativistic magnetron experiments with a 6-vane, Titan tube have generated over 300 MW total microwave output power near 1 GHz. These experiments were driven by a long-pulse, e-beam accelerator. Parameters of the device were voltage = -0.3 to -0.4 MV, current = 1--10 kA, and pulselength = 0.5 microsecond. This body of work investigated pulse-shortening in the relativistic magnetron. Microwave generation with a conventional plastic insulator was compared to that with a new ceramic insulator. The ceramic insulator improved the vacuum by an order of magnitude (1 x 10-7 Torr) and increased voltage stability of the accelerator. The effect of RF breakdown in the waveguide on the intensity and duration of high power microwaves were also investigated. These experiments found that when SF6 gas was introduced into the waveguide, the measured efficiency, power, and pulselength of microwaves increased. Two different microwave extraction mechanisms were used. In the first system, two waveguides were connected to the magnetron pi-radians from each other. The second system used three waveguides to connect to the magnetron's extraction ports at 2pi/3 radians from each other. Microwaves were extracted into and measured from the waveguide. Pulselengths were found to be in the range of 10--200 ns. The theoretical investigation calculates the maximum injected current for a time-independent cycloidal flow in a relativistic, magnetically insulated diode. The analytical theory of Lovelace-Ott was extended by relaxing the space charge limited (SCL) assumption. This theory reduced to Christenson's results in the deeply non-relativistic regime, and to Lovelace-Ott under SCL. This theory has been successfully tested against relativistic PIC code simulations.

  18. Influence of low energy ion implantation on mechanical properties of magnetron sputtered metastable (Cr,Al)N thin films

    Energy Technology Data Exchange (ETDEWEB)

    Ulrich, S.; Holleck, H.; Ye, J.; Leiste, H.; Loos, R.; Stueber, M.; Pesch, P.; Sattel, S

    2003-08-01

    Metastable, nanocrystalline, ternary chromium aluminum nitride thin films have been deposited by reactive unbalanced magnetron sputtering of a chromium aluminum nitride target in a pure nitrogen atmosphere. The film constitution has been examined by X-ray microanalysis, X-ray reflectivity, X-ray diffraction, transmission electron microscopy and high-resolution electron microscopy. The mechanical properties such as Vickers hardness, elastic modulus and internal stress have been determined as a function of ion energy of bombarding particles during film growth. It was possible to show that the dependence of these properties on ion energy can be described by two physical mechanisms, both subsurface nitrogen ion implantation and nitrogen ion bombardment induced relaxation processes, whereas chemical composition is not affected in the case of our reactive deposition conditions.

  19. Characterization of high power impulse magnetron sputtering discharges

    Science.gov (United States)

    Hala, Matej

    Paper I: In the first paper, we present a new approach in the characterization of the high power pulsed magnetron sputtering (HiPIMS) discharge evolution—time- and species-resolved plasma imaging—employing a set of band-pass optical interference filters suitable for the isolation of the emission originating from different species populating the plasma. We demonstrate that the introduction of such filters can be used to distinguish different phases of the discharge, and to visualize numerous plasma effects including background gas excitations during the discharge ignition, gas shock waves, and expansion of metal-rich plasmas. In particular, the application of this technique is shown on the diagnostics of the 200 µs long non-reactive HiPIMS discharges using a Cr target. Paper II: In order to gain further information about the dynamics of reactive HiPIMS discharges, both fast plasma imaging and time- and space-resolved optical emission spectroscopy (OES) are used for a systematic investigation of the 200 µs long HiPIMS pulses operated in Ar, N2 and N 2/Ar mixtures and at various pressures. It is observed that the dense metal plasma created next to the target propagates in the reactor at a speed ranging from 0.7 to 3.5 km s-1, depending on the working gas composition and the pressure. In fact, it increases with higher N 2 concentration and with lower pressure. The visible form of the propagating plasma wave changes from a hemispherical shape in Ar to a drop-like shape extending far from the target with increasing N2 concentration, owing to the significant emission from molecular N2. Interestingly, the evidence of the target self-sputtering is found for all investigated conditions, including pure N2 atmosphere. Paper III: Here, we report on the time- and species-resolved plasma imaging analysis of the dynamics of the 200 µs long HiPIMS discharges above a Cr target ignited in pure O2. It is shown that the discharge emission is dominated solely by neutral and

  20. A comparison of reactivating efficacy of newly developed oximes (K074, K075) and currently available oximes (obidoxime, HI-6) in cyclosarin-and tabun-poisoned rats.

    Science.gov (United States)

    Kassa, Jiri; Jun, Daniel; Kuca, Kamil

    2007-06-01

    The potency of newly developed oximes (K074, K075) and commonly used oximes (obidoxime, HI-6) to reactivate nerve agent-inhibited acetylcholinesterase was evaluated in rats poisoned with tabun or cyclosarin at a lethal dose corresponding to the LD50 value. In vivo determined percentage of reactivation of tabun-inhibited blood and brain acetylcholinesterase showed that obidoxime is the most efficacious reactivator of tabun-inhibited acetylcholinesterase among studied oximes in the peripheral compartment (blood) although the differences between obidoxime and newly developed oximes were not significant. On the other hand, one of the newly developed oximes (K074) seems to be a significantly more efficacious reactivator of tabun-inhibited acetylcholinesterase in the central compartment (brain) than the other studied oximes. In addition, the oxime HI-6 is unable to sufficiently reactivate tabun-inhibited acetylcholinesterase in rats. In vivo determined percentage of reactivation of cyclosarin-inhibited blood and brain acetylcholinesterase in poisoned rats showed that HI-6 is the most efficacious reactivator of cyclosarin-inhibited acetylcholinesterase among the studied oximes in the peripheral (blood) as well as central (brain) compartment although the differences between the oxime HI-6 and other tested oximes in the brain were not significant. Due to their reactivating effects, both newly developed K-oximes can be considered to be promising oximes for the antidotal treatment of acute tabun poisoning while the oximes HI-6 is still the most promising oxime for the treatment of acute cyclosarin poisonings due to its high potency in reactivating cyclosarin-inhibited acetylcholinesterase in the peripheral as well as central compartment.

  1. Surface functionalization of nanostructured LaB{sub 6}-coated Poly Trilobal fabric by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Yan, E-mail: wuyanchn@hotmail.com [Mechanical and Electrical Engineering Branch, Jiaxing Nanyang Polytechnic Institute, Jiaxing 314003 (China); Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials (Ministry of Education), Shandong University, Jinan 250061 (China); Zhang, Lin, E-mail: zhanglin2007@sdu.edu.cn [Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials (Ministry of Education), Shandong University, Jinan 250061 (China); Min, Guanghui, E-mail: ghmin@sdu.edu.cn [Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials (Ministry of Education), Shandong University, Jinan 250061 (China); Yu, Huashun; Gao, Binghuan; Liu, Huihui; Xing, Shilong; Pang, Tao [Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials (Ministry of Education), Shandong University, Jinan 250061 (China)

    2016-10-30

    Highlights: • Nanostructured LaB{sub 6} films were deposited on flexible textile substrates by dc magnetron sputtering. • The pronounced influence of the working pressure on the morphologies and optical properties of LaB{sub 6} films has been revealed. • The concept of Ultraviolet Protection Factor (UPF) was employed and LaB{sub 6}-coated PET textiles with ultraviolet protection ability were obtained. - Abstract: Nanostructured LaB{sub 6} films were deposited on flexible Poly Trilobal substrates (PET textiles) through direct current magnetron sputtering in order to broaden its applications and realize surface functionalization of polyester fabrics. Characterizations and performances were investigated by employing a scanning electron microscope (SEM), Fourier transformation infrared spectroscopy (FT-IR) and ultraviolet-visible (UV–vis) spectrophotometer. Ultraviolet Protection Factor (UPF) conducted by the integral conversion was employed to measure the ultraviolet protection ability. As expected, the growth of LaB{sub 6} film depending on the pressure variation enhanced UV-blocking ability (UPF rating at 30.17) and absorption intensity of the textiles.

  2. Substrate Frequency Effects on Cr x N Coatings Deposited by DC Magnetron Sputtering

    Science.gov (United States)

    Obrosov, Aleksei; Naveed, Muhammad; Volinsky, Alex A.; Weiß, Sabine

    2016-11-01

    Controlled ion bombardment is a popular method to fabricate desirable coating structures and modify their properties. Substrate biasing at high frequencies is a possible technique, which allows higher ion density at the substrate compared with DC current bias. Moreover, high ion energy along with controlled adatom mobility would lead to improved coating growth. This paper focuses on a similar type of study, where effects of coating growth and properties of DC magnetron-sputtered chromium nitride (Cr x N) coatings at various substrate bias frequencies are discussed. Cr x N coatings were deposited by pulsed DC magnetron sputtering on Inconel 718 and (100) silicon substrates at 110, 160 and 280 kHz frequency at low duty cycle. Coating microstructure and morphology were studied by X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM), scratch adhesion testing and nanoindentation. Results indicate a transformation of columnar into glassy structure of Cr x N coatings with the substrate bias frequency increase. This transformation is attributed to preferential formation of the Cr2N phase at high frequencies compared with CrN at low frequencies. Increase in frequency leads to an increase in deposition rate, which is believed to be due to increase in plasma ion density and energy of the incident adatoms. An increase in coating hardness along with decrease in elastic modulus was observed at high frequencies. Scratch tests show a slight increase in coating adhesion, whereas no clear increase in coating roughness can be found with the substrate bias frequency.

  3. Boron ion beam generation utilizing lanthanum hexaboride cathodes: Comparison of vacuum arc and planar magnetron glow

    Energy Technology Data Exchange (ETDEWEB)

    Nikolaev, A. G.; Vizir, A. V.; Yushkov, G. Yu., E-mail: gyushkov@mail.ru; Frolova, V. P. [High Current Electronics Institute, Siberian Branch of the Russian Academy of Science, Tomsk 634055 (Russian Federation); Oks, E. M. [High Current Electronics Institute, Siberian Branch of the Russian Academy of Science, Tomsk 634055 (Russian Federation); Tomsk State University of Control Systems and Radioelectronics, Tomsk 634050 (Russian Federation)

    2016-02-15

    Boron ion beams are widely used for semiconductor ion implantation and for surface modification for improving the operating parameters and increasing the lifetime of machine parts and tools. For the latter application, the purity requirements of boron ion beams are not as stringent as for semiconductor technology, and a composite cathode of lanthanum hexaboride may be suitable for the production of boron ions. We have explored the use of two different approaches to boron plasma production: vacuum arc and planar high power impulse magnetron in self-sputtering mode. For the arc discharge, the boron plasma is generated at cathode spots, whereas for the magnetron discharge, the main process is sputtering of cathode material. We present here the results of comparative test experiments for both kinds of discharge, aimed at determining the optimal discharge parameters for maximum yield of boron ions. For both discharges, the extracted ion beam current reaches hundreds of milliamps and the fraction of boron ions in the total extracted ion beam is as high as 80%.

  4. Phase and Frequency Locked Magnetrons for SRF Sources

    Energy Technology Data Exchange (ETDEWEB)

    Neubauer, Michael [Muons, Inc.; Johnson, Rolland

    2014-09-12

    There is great potential for a magnetron power source that can be controlled both in phase and frequency. Such a power source could revolutionize many particle accelerator systems that require lower capital cost and/or higher power efficiency. Beyond the accelerator community, phase and frequency locked magnetons could improve radar systems around the world and make affordable phased arrays for wireless power transmission for solar powered satellites. This joint project of Muons, Inc., Fermilab, and L-3 CTL was supported by an STTR grant monitored by the Nuclear Physics Office of the DOE Office of Science. The object of the program was to incorporate ferrite materials into the anode of a magnetron and, with appropriate biasing of the ferrites, to maintain frequency lock and to allow for frequency adjustment of the magnetron without mechanical tuners. If successful, this device would have a dual use both as a source for SRF linacs and for military applications where fast tuning of the frequency is a requirement. In order to place the materials in the proper location, several attributes needed to be modeled. First the impact of the magnetron’s magnetic field needed to be shielded from the ferrites so that they were not saturated. And second, the magnetic field required to change the frequency of the magnetron at the ferrites needed to be shielded from the region containing the circulating electrons. ANSYS calculations of the magnetic field were used to optimize both of these parameters. Once the design for these elements was concluded, parts were fabricated and a complete test assembly built to confirm the predictions of the computer models. The ferrite material was also tested to determine its compatibility with magnetron tube processing temperatures. This required a vacuum bake out of the chosen material to determine the cleanliness of the material in terms of outgassing characteristics, and a subsequent room temperature test to verify that the characteristics of

  5. Origin of the energetic ion beams at the substrate generated during high power pulsed magnetron sputtering of titanium

    CERN Document Server

    Maszl, Christian; Benedikt, Jan; von Keudell, Achim

    2013-01-01

    High power pulsed magnetron sputtering (HiPIMS) plasmas generate energetic metal ions at the substrate as a major difference to conventional direct current magnetron sputtering. The origin of these energetic ions in HiPIMS is still an open issue, which is unraveled by using three fast diagnostics: time resolved mass spectrometry with a temporal resolution of 2 $\\mu$s, phase resolved optical emission spectroscopy with 1 $\\mu$s and the rotating shutter experiment with a resolution of 50 $\\mu$s. A power scan from dcMS-like to HiPIMS plasmas was performed, with a 2-inch magnetron and a titanium target as sputter source and argon as working gas. Clear differences in the transport as well in the energetic properties of Ar$^+$, Ar$^{2+}$, Ti$^+$ and Ti$^{2+}$ were observed. For discharges with highest peak power densities a high energetic group of Ti$^{+}$ and Ti$^{2+}$ could be identified. A cold group of ions is always present. It is found that hot ions are observed only, when the plasma enters the spokes regime, ...

  6. Effect of hydrogen addition on the deposition of titanium nitride thin films in nitrogen added argon magnetron plasma

    Science.gov (United States)

    Saikia, P.; Bhuyan, H.; Diaz-Droguett, D. E.; Guzman, F.; Mändl, S.; Saikia, B. K.; Favre, M.; Maze, J. R.; Wyndham, E.

    2016-06-01

    The properties and performance of thin films deposited by plasma assisted processes are closely related to their manufacturing techniques and processes. The objective of the current study is to investigate the modification of plasma parameters occurring during hydrogen addition in N2  +  Ar magnetron plasma used for titanium nitride thin film deposition, and to correlate the measured properties of the deposited thin film with the bulk plasma parameters of the magnetron discharge. From the Langmuir probe measurements, it was observed that the addition of hydrogen led to a decrease of electron density from 8.6 to 6.2  ×  (1014 m-3) and a corresponding increase of electron temperature from 6.30 to 6.74 eV. The optical emission spectroscopy study reveals that with addition of hydrogen, the density of argon ions decreases. The various positive ion species involving hydrogen are found to increase with increase of hydrogen partial pressure in the chamber. The thin films deposited were characterized using standard surface diagnostic tools such as x-ray photoelectron spectroscopy (XPS), secondary ion mass spectrometry (SIMS), x-ray diffraction (XRD), Raman spectroscopy (RS), scanning electron microscopy (SEM) and energy dispersive x-ray spectroscopy (EDS). Although it was possible to deposit thin films of titanium nitride with hydrogen addition in nitrogen added argon magnetron plasma, the quality of the thin films deteriorates with higher hydrogen partial pressures.

  7. A comparison of the potency of trimedoxime and other currently available oximes to reactivate tabun-inhibited acetylcholinesterase and eliminate acute toxic effects of tabun.

    Science.gov (United States)

    Kassa, Jirí; Kuca, Kamil; Cabal, Jirí

    2005-12-01

    Tabun (O-ethyl-N,N-dimethyl phosphoramidocyanidate) belongs to highly toxic organophosphorus compounds misused as chemical warfare agents for military as well as terroristic purposes. It differs from other highly toxic organophosphates by its chemical structure and by the fact that tabun-inhibited acetylcholinesterase is extraordinarily difficult to reactivate. The potency of trimedoxime and other commonly used oximes (pralidoxime, obidoxime, the oxime HI-6) to reactivate tabun-inhibited acetylcholinesterase and to eliminate tabun-induced acute effects was evaluated using in vitro and in vivo methods. In vitro calculated kinetic parameters of reactivation of tabun-inhibited acetylcholinesterase from rat brain homogenate and in vivo determined percentage of reactivation of tabun-inhibited blood and tissue acetylcholinesterase in poisoned rats show that trimedoxime seems to be the most efficacious reactivator in the case of tabun poisonings. Trimedoxime was also found to be the most efficacious oxime in the elimination of acute lethal toxic effects in tabun-poisoned rats and mice. The oxime HI-6, so efficacious against soman, does not seem to be sufficiently effective oxime to reactivate tabun-inhibited acetylcholinesterase and to counteract acute lethal effects of tabun.

  8. Fabrication of Diamond-like Carbon Films by Ion Assisted Middle Frequency Unbalanced Magnetron Sputtering

    Institute of Scientific and Technical Information of China (English)

    ZHANG Yi-chen; SUN Shao-ni; ZHOU Yi; MA Sheng-ge; BA De-chun

    2006-01-01

    Diamond-like carbon (DLC) films are deposited by the Hall ion source assisted by the mid-frequency unbalanced magnetron sputtering technique. The effects of the substrate voltage bias, the substrate temperature, the Hall discharging current and the argon/nitrogen ratio on the DLC film's performance were studied. The experimental results show that the film's surface roughness, the hardness and the Young's modulus increase firstly and then decrease with the bias voltage incrementally increases. Also when the substrate temperature rises, the surface roughness of the film varies slightly, but its hardness and Young's modulus firstly increase followed by a sharp decrease when the temperature surpassing 120 ℃. With the Hall discharging current incrementally rising, the hardness and Young's modulus of the film decrease and the surface roughness of the film on 316L stainless steel firstly decreased and then remains constant.

  9. A new solid state extractor pulser for the FNAL magnetron ion source

    Energy Technology Data Exchange (ETDEWEB)

    Bollinger, D. S. [Fermilab; Lackey, J. [Fermilab; Larson, J. [Fermilab; Triplett, K. [Fermilab

    2015-10-05

    A new solid state extractor pulser has been installed on the Fermi National Accelerator Laboratory (FNAL) magnetron ion source, replacing a vacuum tube style pulser that was used for over 40 years. The required ion source extraction voltage is 35 kV for injection into the radio frequency quadrupole. At this voltage, the old pulser had a rise time of over 150 μs due to the current limit of the vacuum tube. The new solid state pulsers are capable of 50 kV, 100 A peak current pulses and have a rise time of 9 μs when installed in the operational system. This paper will discuss the pulser design and operational experience to date.

  10. A new solid state extractor pulser for the FNAL magnetron ion source

    Energy Technology Data Exchange (ETDEWEB)

    Bollinger, D. S., E-mail: bollinger@fnal.gov; Lackey, J.; Larson, J.; Triplett, K. [Proton Source Department, Fermi National Accelerator Laboratory, Batavia, Illinois 60510 (United States)

    2016-02-15

    A new solid state extractor pulser has been installed on the Fermi National Accelerator Laboratory (FNAL) magnetron ion source, replacing a vacuum tube style pulser that was used for over 40 years. The required ion source extraction voltage is 35 kV for injection into the radio frequency quadrupole. At this voltage, the old pulser had a rise time of over 150 μs due to the current limit of the vacuum tube. The new solid state pulsers are capable of 50 kV, 100 A peak current pulses and have a rise time of 9 μs when installed in the operational system. This paper will discuss the pulser design and operational experience to date.

  11. The role of Ohmic heating in dc magnetron sputtering

    Science.gov (United States)

    Brenning, N.; Gudmundsson, J. T.; Lundin, D.; Minea, T.; Raadu, M. A.; Helmersson, U.

    2016-12-01

    Sustaining a plasma in a magnetron discharge requires energization of the plasma electrons. In this work, Ohmic heating of electrons outside the cathode sheath is demonstrated to be typically of the same order as sheath energization, and a simple physical explanation is given. We propose a generalized Thornton equation that includes both sheath energization and Ohmic heating of electrons. The secondary electron emission yield {γ\\text{SE}} is identified as the key parameter determining the relative importance of the two processes. For a conventional 5 cm diameter planar dc magnetron, Ohmic heating is found to be more important than sheath energization for secondary electron emission yields below around 0.1.

  12. Intrinsic Photocatalytic Assessment of Reactively Sputtered TiO2 Films

    NARCIS (Netherlands)

    Rafieian, Damon; Driessen, Rick T.; Ogieglo, Wojciech; Lammertink, Rob G.H.

    2015-01-01

    Thin TiO2 films were prepared by DC magnetron reactive sputtering at different oxygen partial pressures. Depending on the oxygen partial pressure during sputtering, a transition from metallic Ti to TiO2 was identified by spectroscopic ellipsometry. The crystalline nature of the film developed during

  13. Optical properties and environmental stability of oxide coatings deposited by reactive sputtering.

    Science.gov (United States)

    Edlou, S M; Smajkiewicz, A; Al-Jumaily, G A

    1993-10-01

    Refractory metal-oxide coatings are deposited by reactive dc magnetron sputtering in an oxygen environment. The optical constants and the environmental stability of silicon oxide, aluminium oxide, hafnium oxide, zirconium oxide, tantalum oxide, titanium oxide, and a blend of hafnium oxide with silicon oxide are investigated. Properties of both single-layer and multilayer interference filters are examined.

  14. Deposition of copper coatings in a magnetron with liquid target

    Energy Technology Data Exchange (ETDEWEB)

    Tumarkin, A. V., E-mail: sanyahrustal@mail.ru; Kaziev, A. V.; Kolodko, D. V.; Pisarev, A. A.; Kharkov, M. M.; Khodachenko, G. V. [National Research Nuclear University MEPhI (Moscow Engineering Physics Institute) (Russian Federation)

    2015-12-15

    Copper coatings were deposited on monocrystalline Si substrates using a magnetron discharge with a liquid cathode in the metal vapour plasma. During the deposition, the bias voltage in the range from 0 V to–400 V was applied to the substrate. The prepared films were investigated by a scanning electron microscope, and their adhesive properties were studied using a scratch tester. It was demonstrated that the adhesion of the deposited films strongly depends on the bias voltage and varies in a wide range.

  15. Methods of Phase and Power Control in Magnetron Transmitters for Superconducting Accelerators

    Energy Technology Data Exchange (ETDEWEB)

    Kazadevich, G. [MUONS Inc., Batavia; Johnson, R. [MUONS Inc., Batavia; Neubauer, M. [MUONS Inc., Batavia; Lebedev, V. [Fermilab; Schappert, W. [Fermilab; Yakovlev, V. [Fermilab

    2017-05-01

    Various methods of phase and power control in magnetron RF sources of superconducting accelerators intended for ADS-class projects were recently developed and studied with conventional 2.45 GHz, 1 kW, CW magnetrons operating in pulsed and CW regimes. Magnetron transmitters excited by a resonant (injection-locking) phasemodulated signal can provide phase and power control with the rates required for precise stabilization of phase and amplitude of the accelerating field in Superconducting RF (SRF) cavities of the intensity-frontier accelerators. An innovative technique that can significantly increase the magnetron transmitter efficiency at the widerange power control required for superconducting accelerators was developed and verified with the 2.45 GHz magnetrons operating in CW and pulsed regimes. High efficiency magnetron transmitters of this type can significantly reduce the capital and operation costs of the ADSclass accelerator projects.

  16. Application of magnetron sputtering for producing bioactive ceramic coatings on implant materials

    Indian Academy of Sciences (India)

    J Z Shi; C Z Chen; H J Yu; S J Zhang

    2008-11-01

    Radio frequency (RF) magnetron sputtering is a versatile deposition technique that can produce thin, uniform, dense calcium phosphate coatings. In this paper, principle and character of magnetron sputtering is introduced, and development of the hydroxyapatite and its composite coatings application is reviewed. In addition, influence of heat treatment on magnetron sputtered coatings is discussed. The heat treated coatings have been shown to exhibit bioactive behaviour both in vivo and in vitro. At last, the future application of the bioactive ceramic coating deposited by magnetron sputtering is mentioned.

  17. Current trend of induction and maintenance treatment in positive panel-reactive antibody patients: a report on OPTN/UNOS kidney transplant registry data

    Institute of Scientific and Technical Information of China (English)

    Junchao Cai; Paul I. Terasaki

    2011-01-01

    Background The status of sensitization in kidney transplant recipients in the last 10 years and the trend of induction and maintenance therapy in patients of different panel-reactive antibody (PRA) levels have not been analyzed. The aim of this study was to investigate the current status of pre-transplant sensitization and its association with graft outcome.Methods A total of 155 570 kidney transplants reported to United Network for Organ Sharing (UNOS) during 2000-2009 were included in this study. We investigated the current status of pre-transplant sensitization and its association with graft outcome, and also compared the usage trend of 16 induction agents and 7 maintenance immunosuppressants in patients at different PRA levels. The difference of distributions of categorical variables between groups was investigated using the chi-square test. Unpaired t test or one-way analysis of variance (ANOVA) were used for numerical variables. The survival rates of transplant recipients were estimated using Kaplan-Meier methods and significance was determined by Log-rank test. Two-side P value <0.05 was considered statistically significant. All statistical analyses were performed using STATA 10 with all available updates as of March 2010 (StataCorp LP, College Station, Texas 77845, USA).Results Despite the fact of the decreased percentages of kidney transplant recipients with presensitization history, the mean PRA levels of all kidney recipients has been increasing in the last 7 years, which was possibly due to the introduction of more sensitive antibody testing techniques. The percentage of patients with treated rejection episodes within one year post-transplant were significantly higher in sensitized patients (PRA=50%-100%:14.3% and PRA=1%-49%:13.9%) than in non-sensitized patients (12.4%). Both 1- and 5-year graft survival rates improved in the last 10 years; this was more significant in high PRA patients. Thymoglobulin was the most commonly used induction agent in

  18. Tribological and structural properties of titanium nitride and titanium aluminum nitride coatings deposited with modulated pulsed power magnetron sputtering

    Science.gov (United States)

    Ward, Logan

    The demand for economical high-performance materials has brought attention to the development of advanced coatings. Recent advances in high power magnetron sputtering (HPPMS) have shown to improve tribological properties of coatings. These coatings offer increased wear and oxidation resistance, which may facilitate the use of more economical materials in harsh applications. This study demonstrates the use of novel forms of HPPMS, namely modulated pulsed-power magnetron sputtering (MPPMS) and deep oscillation magnetron sputtering (DOMS), for depositing TiN and Ti1-xAlxN tribological coatings on commonly used alloys, such as Ti-6Al-4V and Inconel 718. Both technologies have been shown to offer unique plasma characteristics in the physical vapor deposition (PVD) process. High power pulses lead to a high degree of ionization compared to traditional direct-current magnetron sputtering (DCMS) and pulsed magnetron sputtering (PMS). Such a high degree of ionization was previously only achievable by cathodic arc deposition (CAD); however, CAD can lead to increased macroparticles that are unfavorable in high friction and corrosive environments. MPPMS, DOMS, and other HPPMS techniques offer unique plasma characteristics and have been shown to produce coatings with refined grain structure, improved density, hardness, adhesion, and wear resistance. Using DOMS and MPPMS, TiN and Ti1-xAlxN coatings were deposited using PMS to compare microstructures and tribological performance. For Ti1-xAlxN, two sputtering target compositions, Ti 0.5Al0.5 and Ti0.3Al0.7, were used to evaluate the effects of MPPMS on the coating's composition and tribological properties. Scanning electron microscopy (SEM), transmission electron microscopy (TEM), and X-ray diffraction (XRD) were used to characterize microstructure and crystallographic texture. Several tribological properties were evaluated including: wear rate, coefficient of friction, adhesion, and nanohardness. Results show that substrate

  19. Nitrogen Contents on Tribological Properties of Magnetron Sputtered SiCN Coatings

    Institute of Scientific and Technical Information of China (English)

    TIETUNSUN; Y.Q.FU; J.WEI; H.J.DU

    2004-01-01

    Silicon carbonitride (SiCN) coatings were deposited on silicon and tungsten carbide substrates by co-sputtering silicon and carbon in argon and nitrogen mixture atmosphere using magnetron-sputtering system. The effect of the N2 concentration, RF substrate bias voltage and target current on film deposition rate, roughness, adhesion, mechanical and tribological properties of coatings were investigated. The deposition rate was found to increase with the increasing nitrogen concentration. X-ray photoelectron spectroscopy analysis showed that high nitrogen concentration in the nitrogen-argon gas mixture enhanced the incorporation of C and N but reduced the incorporation of Si. SiCN coatings have good tribological properties at a N2 concentration of approximately 60%.

  20. Nitrogen Contents on Tribological Properties of Magnetron Sputtered SiCN Coatings

    Institute of Scientific and Technical Information of China (English)

    TIETUN SUN; Y.Q. FU; J. WEI; H. J. DU

    2004-01-01

    Silicon carbonitride (SiCN) coatings were deposited on silicon and tungsten carbide substrates by co-sputtering silicon and carbon in argon and nitrogen mixture atmosphere using magnetron-sputtering system. The effect of the N2concentration, RF substrate bias voltage and target current on film deposition rate, roughness, adhesion, mechanical and tribological properties of coatings were investigated. The deposition rate was found to increase with the increasing nitrogen concentration. X-ray photoelectron spectroscopy analysis showed that high nitrogen concentration in the nitrogen-argon gas mixture enhanced the incorporation of C and N but reduced the incorporation of Si. SiCN coatings have good tribological properties at a N2 concentration of approximately 60%.

  1. Preparation and characterization of transparent conducting ZnO:W films by DC magnetron sputtering*

    Institute of Scientific and Technical Information of China (English)

    Zhang Huafu; Yang Shugang; Liu Hanfa; Yuan Changkun

    2011-01-01

    Tungsten-doped zinc oxide (ZnO:W) films with low resistivity and high transmittance were successfully deposited on glass substrates by direct current magnetron sputtering at low temperature. The deposition pressure is varied from 12 to 21 Pa. The X-ray diffraction results show that all of the deposited films are polycrystalline and have a hexagonal structure with a preferred c-axis orientation. The crystallinity, morphologies and resistivity of ZnO:W films greatly depend on deposition pressure while the optical properties including optical transmittance,optical band gap as well as refractive index are not sensitive to deposition pressure. The deposited films with an electrical resistivity as low as 1.5 × 10-4 Ω·cm, sheet resistance of 6.8 Ω/□ and an average transmittance of 91.3% in the visible range were obtained at a deposition pressure of 21 Pa and sputtering power of 130 W.

  2. Optical properties and structures of silver thin films deposited by magnetron sputtering with different thicknesses

    Institute of Scientific and Technical Information of China (English)

    Xilian Sun; Ruijin Hong; Haihong Hou; Zhengxiu Fan; Jianda Shao

    2006-01-01

    A series of thin Ag films with different thicknesses grown under identical conditions are analyzed by means of spectrophotometer. From these measurements the values of refractive index and extinction coefficient are calculated. The films are deposited onto BK7 glass substrates by direct current (DC) magnetron sputtering. It is found that the optical properties of the Ag films can be affected by films thickness.Below critical thickness of 17 nm, which is the thickness at which Ag films form continuous films, the optical properties and constants vary significantly with thickness increasing and then tend to a stable value up to about 40 nm. At the same time, X-ray diffraction measurement is carried out to examine the microstructure evolution of Ag films as a function of films thickness. The relation between optical properties and microstructure is discussed.

  3. Compression and strong rarefaction in high power impulse magnetron sputtering discharges

    Energy Technology Data Exchange (ETDEWEB)

    Horwat, David; Anders, Andre

    2010-11-11

    Gas compression and strong rarefaction have been observed for high power impulse magnetron sputtering (HIPIMS) discharges using a copper target in argon. Time-resolved ion saturation currents of 35 probes were simultaneously recorded for HIPIMS discharges operating far above the self-sputtering runaway threshold. The argon background pressure was a parameter for the evaluation of the spatial and temporal development of the plasma density distribution. The data can be interpreted by a massive onset of the sputtering flux (sputter wind) that causes a transient densification of the gas, followed by rarefaction and the replacement of gas plasma by the metal plasma of sustained self-sputtering. The plasma density pulse follows closely the power pulse at low pressure. At high pressure, the relatively remote probes recorded a density peak only after the discharge pulse, indicative for slow, diffusive ion transport.

  4. Hepatitis B reactivation and current clinical impact Reactivación de la hepatitis B y su impacto clínico actual

    Directory of Open Access Journals (Sweden)

    B. Álvarez Suárez

    2010-09-01

    Full Text Available Hepatitis B virus (HBV reactivation results from increased viral replication in inactive carriers or patients with prior infection with HBV. Reactivation may occur spontaneously or secondary to immunomodulating or immunosuppressive chemotherapy. Reactivation may manifest with no symptoms but on occasion results in acute or even severe acute hepatitis. Prevention is the best management approach, hence HBV screening using serology should be performed for all patients undergoing any immunomodulating, immunosuppressive or chemotherapeutic treatment. Antiviral prophylaxis has proven effective in inactive carriers and in some patients with former infection with HBV undergoing selected immunosuppressive therapies.La reactivación del virus de la hepatitis B se debe a un aumento de la replicación del virus en pacientes portadores inactivos o con infecciones pasadas de VHB. La reactivación puede producirse espontáneamente o de manera secundaria a tratamientos de quimioterapia, inmunomoduladores o inmunosupresores. La reactivación puede manifestarse de manera asintomática pero en algunos casos puede causar hepatitis agudas e incluso hepatitis agudas graves. El mejor tratamiento es la prevención por lo que se debe realizar un cribado del VHB mediante una serología a todos los pacientes que vayan a someterse a cualquier tratamiento inmunomodulador, de quimioterapia o inmunosupresor. El tratamiento profiláctico antiviral ha demostrado ser eficaz en los pacientes portadores inactivos y en algunos pacientes con infecciones pasadas de VHB sometidos a ciertos tratamientos inmunosupresores.

  5. High-power magnetron transmitter as an RF source for superconducting linear accelerators

    CERN Document Server

    Kazakevich, Grigory; Flanagan, Gene; Marhauser, Frank; Yakovlev, Vyacheslav; Chase, Brian; Lebedev, Valeri; Nagaitsev, Sergei; Pasquinelli, Ralph; Solyak, Nikolay; Quinn, Kenneth; Wolff, Daniel; Pavlov, Viatcheslav

    2014-01-01

    A concept of a high-power magnetron transmitter for operation within a wideband control feedback loop in phase and amplitude is presented. This transmitter is proposed to drive Superconducting RF (SRF) cavities for intensity-frontier GeV-scale proton/ion linacs. The transmitter performance at the dynamic control was verified in experiments with CW, S-Band, 1 kW magnetrons. The wideband control of magnetrons, required for the superconducting linacs, was realized using the magnetrons, injection-locked by the phase-modulated signals. The capabilities of the magnetrons injection-locked by the phase-modulated signals and adequateness for feeding of SRF cavities were verified by measurements of the transfer function magnitude characteristics of single and 2-cascade magnetrons, by measurements the magnetrons phase performance and by measurements of spectra of the carrier frequency. At the ratio of power of locking signal to output power less than -13 dB (in 2-cascade scheme per magnetron, respectively) we demonstrat...

  6. A High-power 650 MHz CW Magnetron Transmitter for Intensity Frontier Superconducting Accelerators

    CERN Document Server

    Treado, T A; Nagaitsev, S; Pasquinelli, R J; Yakovlev, V P; Flanagan, G; Johnson, R P; Kazakevich, G M; Marhauser, F; Neubauer, M L

    2013-01-01

    A concept of a 650 MHz CW magnetron transmitter with fast control in phase and power, based on two-stage injection-locked CW magnetrons, has been proposed to drive Superconducting Cavities (SC) for intensity-frontier accelerators. The concept is based on a theoretical model considering a magnetron as a forced oscillator and experimentally verified with a 2.5 MW pulsed magnetron. To fulfill fast control of phase and output power requirements of SC accelerators, both two-stage injection-locked CW magnetrons are combined with a 3-dB hybrid. Fast control in output power is achieved by varying the input phase of one of the magnetrons. For output power up to 250 kW we expect the output/input power ratio to be about 35 to 40 dB in CW or quasi-CW mode with long pulse duration. All magnetrons of the transmitter should be based on commercially available models to decrease the cost of the system. An experimental model using 1 kW, CW, S-band, injection-locked magnetrons with a 3-dB hybrid combiner has been developed and ...

  7. Heteroepitaxial growth of TiN film on MgO (100) by reactive magnetron sputtering.

    Science.gov (United States)

    Chen, Wei-Chun; Peng, Chun-Yen; Chang, Li

    2014-01-01

    TiN thin films were deposited on MgO (100) substrates at different substrate temperatures using rf sputtering with Ar/N2 ratio of about 10. At 700°C, the growth rate of TiN was approximately 0.05 μm/h. The structural and electrical properties of TiN thin films were characterized with x-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and Hall measurements. For all deposition conditions, XRD results show that the TiN films can be in an epitaxy with MgO with cube-on-cube orientation relationship of (001)TiN // (001)MgO and [100]TiN // [100]MgO. TEM with selected-area electron diffraction pattern verifies the epitaxial growth of the TiN films on MgO. SEM and AFM show that the surface of the TiN film is very smooth with roughness approximately 0.26 nm. The minimum resistivity of the films can be as low as 45 μΩ cm.

  8. Tribology of zrn, crn and tialn thin films deposited by reactive magnetron sputtering

    OpenAIRE

    Alexander Ruden; Juam M González; RESTREPO, JOHANS S.; Michell F Cano; Federico Sequeda

    2013-01-01

    El coeficiente de fricción y el coeficiente de desgaste, representan dos variables importantes para la elección de recubrimientos duros en aplicaciones críticas de ingeniería tales como corte y conformado de materiales. Para explicar de manera profunda estas variables, es necesario conocer los diferentes tipos de desgaste que ocurren en estas superficies recubiertas. Se han evaluado recubrimientos de nitruro de circonio (ZrN), nitruro de cromo (CrN) y nitruro de titanio aluminio (TiAlN), prod...

  9. Tribology of ZRN, CRN and TIALN thin films deposited by reactive magnetron sputtering

    Directory of Open Access Journals (Sweden)

    Alexander Ruden

    2013-01-01

    Full Text Available El coeficiente de fricción y el coeficiente de desgaste, representan dos variables importantes para la elección de recubrimientos duros en aplicaciones críticas de ingeniería tales como corte y conformado de materiales. Para explicar de manera profunda estas variables, es necesario conocer los diferentes tipos de desgaste que ocurren en estas superficies recubiertas. Se han evaluado recubrimientos de nitruro de circonio (ZrN, nitruro de cromo (CrN y nitruro de titanio aluminio (TiAlN, producidos por la técnica magnetrón sputtering reactivo, determinando las propiedades tribológicas, midiendo coeficientes de fricción (COF y desgaste, y mostrando un análisis de los mecanismos de desgaste presentes para cada recubrimiento durante el contacto tribológico en sistemas cerámicos. Se observó que el voltaje de polarización incrementa las fallas por deformación plástica y la generación de un tercer cuerpo en la superficie del ZrN. El aumento del flujo de nitrógeno en la deposición de CrN, mejora el comportamiento tribológico al segregar la fase cúbica del material, optimizando sus propiedades superficiales. Al incrementar la temperatura de deposición del TiAlN se mejora su calidad superficial (reducción de rugosidad y densidad de poros, reduciendo la abrasión y aumentando la capacidad de carga del compuesto.

  10. Effects of Processing Variables on Tantalum Nitride by Reactive-Ion-Assisted Magnetron Sputtering Deposition

    Science.gov (United States)

    Wei, Chao‑Tsang; Shieh, Han‑Ping D.

    2006-08-01

    The binary compound tantalum nitride (TaN) and ternary compounds tantalum tungsten nitrides (Ta1-xWxNy) exhibit interesting properties such as high melting point, high hardness, and chemical inertness. Such nitrides were deposited on a tungsten carbide (WC) die and silicon wafers by ion-beam-sputter evaporation of the respective metal under nitrogen ion-assisted deposition (IAD). The effects of N2/Ar flux ratio, post annealing, ion-assisted deposition, deposition rate, and W doping in coating processing variables on hardness, load critical scratching, oxidation resistance, stress and surface roughness were investigated. The optimum N2/Ar flux ratios in view of the hardness and critical load of TaN and Ta1-xWxNy films were ranged from 0.9 to 1.0. Doping W into TaN to form Ta1-xWxNy films led significant increases in hardness, critical load, oxidation resistance, and reduced surface roughness. The optimum doping ratio was [W/(W+Ta)]=0.85. From the deposition rate and IAD experiments, the stress in the films is mainly contributed by sputtering atoms. The lower deposition rate at a high N2/Ar flux ratio resulted in a higher compressive stress. A high compressive residual stress accounts for a high hardness. The relatively high compressive stress was attributed primarily to peening by atoms, ions and electrons during film growth, the Ta1-xWxNy films showed excellent hardness and strength against a high temperature, and sticking phenomena can essentially be avoided through their use. Ta1-xWxNy films showed better performance than the TaN film in terms of mechanical properties and oxidation resistance.

  11. Programming Reactive Extensions and LINQ

    CERN Document Server

    Liberty, Jesse

    2011-01-01

    Pro Reactive Extensions and LINQ is a deep dive into the next important technology for .NET developers: Reactive Extensions. This in-depth tutorial goes beyond what is available anywhere else to teach how to write WPF, Silverlight, and Windows Phone applications using the Reactive Extensions (Rx) to handle events and asynchronous method calls. Reactive programming allows you to turn those aspects of your code that are currently imperative into something much more event-driven and flexible. For this reason, it's sometimes referred to as LINQ for Events. Reactive programming hinges on the concep

  12. First demonstration and performance of an injection locked continuous wave magnetron to phase control a superconducting cavity

    Energy Technology Data Exchange (ETDEWEB)

    A.C. Dexter, G. Burt, R.G. Carter, I. Tahir, H. Wang, K. Davis, R. Rimmer

    2011-03-01

    The applications of magnetrons to high power proton and cw electron linacs are discussed. An experiment is described where a 2.45 GHz magnetron has been used to drive a single cell superconducting cavity. With the magnetron injection locked, a modest phase control accuracy of 0.95° rms has been demonstrated. Factors limiting performance have been identified.

  13. Wear and corrosion behavior of W/WC bilayers deposited by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Sanchez, N.A. de [Excellence Center for Novel Materials, Universidad del Valle, Cali (Colombia); Jaramillo, H.E. [Science and Engineering of Materials Group, Department of Basic Science of Engineering, Universidad Autonoma de Occidente, Cali (Colombia); Department of Energetic and Mechanic, Universidad Autonoma de Occidente, Cali (Colombia); Bejarano, G. [Excellence Center for Novel Materials, Universidad del Valle, Cali (Colombia); Group for Engineering and Materials Development, CDT ASTIN-SENA, Cali (Colombia); Group of Corrosion and Protection, Antioquia University, Medellin (Colombia); Villamil, B.E.; Teran, G. [Richer Young, COLCIENCIAS, Cali (Colombia)

    2007-07-01

    WC/W coatings were deposited by reactive magnetron sputtering using 40%, 60% and 80% methane CH{sub 4} in the gas mixture. The bilayers were grown on to AISI 420 stainless-steel substrates in order to study the wear and corrosion behavior. Before growing the bilayers, one Ti monolayer was grown to improve the adherence of the coatings to the substrate. The wear resistance and the friction coefficient of the coatings were determined using a pin-on-disk tribometer. All coatings had a friction coefficient of about 0.5. The measured weight lost of the bilayers from each probe allowed the qualitative analysis of wear behavior all coatings. The bilayers grown with 80% methane showed the best abrasive wear resistance and adhesion without failure through the coating in the wear track for dry pin-on-disk sliding. Electrochemical corrosion test showed that the bilayers grown with 80% methane were more resistant to corrosion than the ones uncoated. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  14. Ion beam analysis of TiN/Ti multilayers deposited by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Andrade, E. E-mail: andrade@fisica.unam.mx; Flores, M.; Muhl, S.; Barradas, N.P.; Murillo, G.; Zavala, E.P.; Rocha, M.F

    2004-06-01

    TiN/Ti multilayers, 1.74-9.80 {mu}m thick, were deposited on 304 stainless steel substrates by reactive unbalanced magnetron sputtering. It is known that such multilayers can improve the corrosion resistance of the stainless steel. The titanium layers help to reduce the occurrence of pinholes that arise because of the irregularities in substrate surface, and decrease the porosity of subsequent TiN coatings by improving the layers microstructure. A 1400 keV deuterium beam was used to analyse the samples and combinations of RBS/NRA methods were applied to evaluate the sample spectra. The {sup 14}N(d,{alpha}{sub 1}) {sup 12}C NR cross sections are well known and were used as way to determine the {sup 14}N concentration in the TiN{sub x} layers. The corrosion resistance of the layers was studied by means of potentiodynamic polarization in a 0.5 M NaCl solution. The corrosion test demonstrated that the number of TiN/Ti layers and its total thickness determine the corrosion resistance.

  15. Microstructural and magnetic properties of thick ({>=}10 {mu}m) magnetron sputtered barium ferrite films

    Energy Technology Data Exchange (ETDEWEB)

    Dehlinger, A.S. [Universite de Lyon, Institut des Nanotechnologies de Lyon INL-UMR 5270, CNRS, INSA Lyon, Villeurbanne F-69621 (France); Le Berre, M., E-mail: martine.leberre@insa-lyon.f [Universite de Lyon, Institut des Nanotechnologies de Lyon INL-UMR 5270, CNRS, INSA Lyon, Villeurbanne F-69621 (France); Canut, B. [Universite de Lyon, Institut des Nanotechnologies de Lyon INL-UMR 5270, CNRS, INSA Lyon, Villeurbanne F-69621 (France); Chatelon, J.P. [DIOM, Universite Jean Monnet, Saint Etienne F-42023 (France); Albertini, D. [Universite de Lyon, Institut des Nanotechnologies de Lyon INL-UMR 5270, CNRS, INSA Lyon, Villeurbanne F-69621 (France); Perrot, S. [RADIALL, Voiron F-38500 (France); Givord, D. [Institut Louis Neel, UPR 5051, Grenoble F-38042 (France); Rousseau, J.J. [DIOM, Universite Jean Monnet, Saint Etienne F-42023 (France)

    2010-11-15

    This work focuses on the properties of 10-15 {mu}m thick barium M-type hexaferrite (BaFe{sub 12}O{sub 19} or BaM) films deposited by non-reactive RF magnetron sputtering on alumina substrates. High deposition rates were achieved through deposition at room temperature and operation at an RF power of 100 W. By varying sputtering gas pressure, the dc magnetic properties were correlated with structural, morphological and compositional properties obtained by X-ray diffraction (XRD), atomic force microscopy (AFM) and Rutherford backscattering spectrometry (RBS), respectively. A deposition pressure of P=3 Pa enables one to reach the best compromise between high deposition rate (0.75 {mu}m/h) and adequate crystallographic, stoichiometric and magnetostatic properties. Finally the gyromagnetic properties at high frequency were assessed through the characterization of coplanar isolator up to 60 GHz. As such, hexaferrite films prepared using this technique may offer opportunities for the next generation of self-biased planar microwave devices.

  16. Corrosion resistance of CrN thin films produced by dc magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Ruden, A. [Laboratorio de Física del Plasma, Universidad Nacional de Colombia Sede Manizales, Km. 9 vía al Magdalena, Manizales (Colombia); Laboratorio de Recubrimientos Duros y Aplicaciones Industriales–RDAI, Universidad del Valle, Calle 13 N° 100-00 Ciudadela Meléndez, Cali (Colombia); Departamento de matemáticas, Universidad Tecnológica de Pereira, Pereira (Colombia); Restrepo-Parra, E., E-mail: erestrepopa@unal.edu.co [Laboratorio de Física del Plasma, Universidad Nacional de Colombia Sede Manizales, Km. 9 vía al Magdalena, Manizales (Colombia); Paladines, A.U.; Sequeda, F. [Laboratorio de Recubrimientos Duros y Aplicaciones Industriales–RDAI, Universidad del Valle, Calle 13 N° 100-00 Ciudadela Meléndez, Cali (Colombia)

    2013-04-01

    In this study, the electrochemical behavior of chromium nitride (CrN) coatings deposited on two steel substrates, AISI 304 and AISI 1440, was investigated. The CrN coatings were prepared using a reactive d.c. magnetron sputtering deposition technique at two different pressures (P1 = 0.4 Pa and P2 = 4 Pa) with a mixture of N{sub 2}–Ar (1.5-10). The microstructure and crystallinity of the CrN coatings were investigated using X-ray diffraction. The aqueous corrosion behavior of the coatings was evaluated using two methods. The polarization resistance (Tafel curves) and electrochemical impedance spectra (EIS) in a saline (3.5% NaCl solution) environment were measured in terms of the open-circuit potentials and polarization resistance (R{sub p}). The results indicated that the CrN coatings present better corrosion resistance and R{sub p} values than do the uncoated steel substrates, especially for the coatings produced on the AISI 304 substrates, which exhibited a strong enhancement in the corrosion resistance. Furthermore, better behavior was observed for the coatings produced at lower pressures (0.4 Pa) than those grown at 4 Pa.

  17. Thermal evolution of Er silicate thin films grown by rf magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Lo Savio, R; Miritello, M; Piro, A M; Grimaldi, M G; Priolo, F [MATIS CNR-INFM and Dipartimento di Fisica e Astronomia dell' Universita di Catania, via Santa Sofia 64, 95123 Catania (Italy); Iacona, F [CNR-IMM, Stradale Primosole 50, 95121 Catania (Italy)], E-mail: roberto.losavio@ct.infn.it

    2008-11-12

    Stoichiometric Er silicate thin films, monosilicate (Er{sub 2}SiO{sub 5}) and disilicate (Er{sub 2}Si{sub 2}O{sub 7}), have been grown on c-Si substrates by rf magnetron sputtering. The influence of annealing temperature in the range 1000-1200 deg. C in oxidizing ambient (O{sub 2}) on the structural and optical properties has been studied. In spite of the known reactivity of rare earth silicates towards silicon, Rutherford backscattering spectrometry shows that undesired chemical reactions between the film and the substrate can be strongly limited by using rapid thermal treatments. Monosilicate and disilicate films crystallize at 1100 and 1200 deg. C, respectively, as shown by x-ray diffraction analysis; the crystalline structures have been identified in both cases. Moreover, photoluminescence (PL) measurements have demonstrated that the highest PL intensity is obtained for Er{sub 2}Si{sub 2}O{sub 7} film annealed at 1200 deg. C. In fact, this treatment allows us to reduce the defect density in the film, in particular by saturating oxygen vacancies, as also confirmed by the increase of the lifetime of the PL signal.

  18. Rapidly switched wettability of titania films deposited by dc magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Shirolkar, Mandar; Abyaneh, Majid Kazemian; Singh, Akanksha; Kulkarni, Sulabha [DST Unit on Nanoscience, Department of Physics, University of Pune (India); Tomer, Anju; Choudhary, Ram; Sathe, Vasant; Phase, Deodatta [UGC-DAE Consortium for Scientific Research Indore Centre, University Campus, Khandwa Road, Indore (India)], E-mail: skk@physics.unipune.ernet.in

    2008-08-07

    Rapid switching (5-15 minutes) in the wettability of titania (TiO{sub 2}) thin films in the anatase phase has been observed after UV irradiation. The film surface becomes superhydrophilic when exposed to UV radiation. The relationship between wettability, thickness and crystallinity of TiO{sub 2} films has been investigated. Amorphous and anatase TiO{sub 2} thin films have been deposited by varying the argon to oxygen gas ratio, using the reactive dc magnetron sputtering technique. It was found that the gas ratio primarily affects thickness, crystallinity, morphology and wettability of the films. The highest contact angle that has been reported so far, namely, 170 deg. -176 deg., has been observed for film thickness varying from 112-500 nm in the case of pristine anatase TiO{sub 2} films. On the other hand, amorphous films show a variation in the contact angle from 120 deg. to 140 deg. as the thickness varied from 70 to 145 nm. The deposition is extremely robust and has an ultralow hysteresis in the contact angle. The films exhibit a morphology similar to the lotus leaf and the water hyacinth.

  19. Magnetron Sputtered NbN Films with Nb Interlayer on Mild Steel

    Directory of Open Access Journals (Sweden)

    Kulwant Singh

    2011-01-01

    Full Text Available The aim of the study is to extend the NbN coating on MS with Nb interlayer to explore the benefits of hard nitride coatings on low-cost structural material and to compare the coating with NbN monolithic coating on SS. NbN on MS and SS was deposited by reactive d.c. magnetron sputtering at various N2/Ar flow ratios and substrate bias. Deposition rate decreased from 20 to 10 nm/min (without biasing and from 16 to 8 nm/min (−50 V biasing when N2/Ar ratio was varied from zero to 70%. Deposition rate decreased with the increase in bias voltage. Coatings showed hexagonal β Nb2N, cubic δ NbN, and hexagonal δ′ NbN as major phases with the increasing N2 flow. Surface hardness reached a maximum of 2040 HK25 at a N2/Ar of 20%. Critical loads, for cohesive and adhesive failure for coating on MS, were between 6–8 N and 9–12 N respectively; for coating on SS, the values were between 7–15 N and 12–25 N respectively. Duplex coatings were studied for hardness by Knoop microindentation, adhesion by scratch tester, and corrosion by potentiodynamic polarization technique. Hardness, adhesion, and corrosion resistance all improved when NbN coating was incorporated with Nb interlayer on MS.

  20. Microstructure and Optical Characterization of Magnetron Sputtered NbN Thin Films

    Institute of Scientific and Technical Information of China (English)

    DU Xin-kang; WANG Tian-min; WANG Cong; CHEN Bu-liang; ZHOU Long

    2007-01-01

    Some fundamental studies on the preparation, structure and optical properties of NbN films were carried out. NbN thin films were deposited by DC reactive magnetron sputtering at different N2 partial pressures and different substrate temperatures ranging from -50 ℃to 600 ℃. X-ray diffraction analysis (XRD) and scanning electron microscopy (SEM) were employed to characterize their phase components, microstructures, grain sizes and surface morphology. Optical properties inclusive of refractive indexes, extinction coefficients and transmittance of the NbN films under different sputtering conditions were measured. With the increase in the N2 partial pressure,δ-NbN phase structure gets forming and the grain size and lattice constant of the cubic NbN increasing. The deposited NbN film has relatively high values of refractive index and extinction coefficient in the wavelength ranging from 240 nm to 830 nm. Substrate temperature exerts notable influences on the microstructure and optical transmittance of the NbN films. The grain sizes of the δ-NbN film remarkably increase with the rise of the substrate temperature, while the transmittance of the films with the same thickness decreases.Ultra-fine granular film with particle size of several nanometers forms when the substrate is cooled to -50 ℃, and a remarkable augmentation of transmittance could be noticed under so low a temperature.

  1. Enhancement of bioactivity on medical polymer surface using high power impulse magnetron sputtered titanium dioxide film.

    Science.gov (United States)

    Yang, Yi-Ju; Tsou, Hsi-Kai; Chen, Ying-Hung; Chung, Chi-Jen; He, Ju-Liang

    2015-12-01

    This study utilizes a novel technique, high power impulse magnetron sputtering (HIPIMS), which provides a higher ionization rate and ion bombardment energy than direct current magnetron sputtering (DCMS), to deposit high osteoblast compatible titanium dioxide (TiO2) coatings with anatase (A-TiO2) and rutile (R-TiO2) phases onto the biomedical polyetheretherketone (PEEK) polymer substrates at low temperature. The adhesions of TiO2 coatings that were fabricated using HIPIMS and DCMS were compared. The in vitro biocompatibility of these coatings was confirmed. The results reveal that HIPIMS can be used to prepare crystallinic columnar A-TiO2 and R-TiO2 coatings on PEEK substrate if the ratio of oxygen to argon is properly controlled. According to a tape adhesion test, the HIPIMS-TiO2 coatings had an adhesion grade of 5B even after they were immersed in simulated body fluid (SBF) environments for 28days. Scratch tests proved that HIPIMS-TiO2 coatings undergo cohesive failure. These results demonstrate that the adhesive force between HIPIMS-TiO2 coating/PEEK is stronger than that between DCMS-TiO2 coating/PEEK. After a long period (28days) of immersion in SBF, a bone-like crystallinic hydroxyapatite layer with a corresponding Ca/P stoichiometry was formed on both HIPIMS-TiO2. The osteoblast compatibility of HIPIMS-TiO2 exceeded that of the bare PEEK substrate. It is also noticeable that the R-TiO2 performed better in vitro than the A-TiO2 due to the formation of many negatively charged hydroxyl groups (-OH(-)) groups on R-TiO2 (110) surface. In summary, the HIPIMS-TiO2 coatings satisfied the requirements for osseointegration, suggesting the possibility of using HIPIMS to modify the PEEK surface with TiO2 for spinal implants.

  2. Influence of plasma parameters on the growth and properties of magnetron sputtered CNx thin films

    Science.gov (United States)

    Hellgren, Niklas; Macák, Karol; Broitman, Esteban; Johansson, Mats P.; Hultman, Lars; Sundgren, Jan-Eric

    2000-07-01

    Carbon nitride CNx thin films were grown by unbalanced dc magnetron sputtering from a graphite target in a pure N2 discharge, and with the substrate temperature Ts kept between 100 and 550 °C. A solenoid coil positioned in the vicinity of the substrate was used to support the magnetic field of the magnetron, so that the plasma could be increased near the substrate. By varying the coil current and gas pressure, the energy distribution and fluxes of N2+ ions and C neutrals could be varied independently of each other over a wide range. An array of Langmuir probes in the substrate position was used to monitor the radial ion flux distribution over the 75-mm-diam substrate, while the flux and energy distribution of neutrals was estimated through Monte Carlo simulations. The structure, surface roughness, and mechanical response of the films are found to be strongly dependent on the substrate temperature, and the fluxes and energies of the deposited particles. By controlling the process parameters, the film structure can thus be selected to be amorphous, graphite-like or fullerene-like. When depositing at 3 mTorr N2 pressure, with Ts>200 °C, a transition from a disordered graphite-like to a hard and elastic fullerene-like structure occurred when the ion flux was increased above ˜0.5-1.0 mA/cm2. The nitrogen-to-carbon concentration ratio in the films ranged from ˜0.1 to 0.65, depending on substrate temperature and gas pressure. The nitrogen film concentration did, however, not change when varying the nitrogen ion-to-carbon atom flux ratios from ˜1 to 20.

  3. Reactive sputtering of TiN films at large substrate to target distances

    Energy Technology Data Exchange (ETDEWEB)

    Musil, J.; Kadlec, S. (Czechosovak Academy of Sciences, Prague (Czechoslovakia). Inst. of Physics)

    1990-01-01

    This paper is a critical review of the present status of the magnetron ion sputter plating of thin CiN films. Thus different possibilities of extracting high ion currents 1{sub s} from the magnetron discharge to substrates located not only at standard target to substrate distances d{sub S-T} of about 50 mm but also at larger distances d{sub S-T} are discussed in detail. Special attention is devoted to magnetron sputtering systems with enhanced ionization, to plasma confinement in the magnetron sputtering systems and to the discharge characteristics of an unbalanced magnetron (UM). It is shown that a UM can be operated in the regime of a double-site-sustained discharge (DSSD) and in this case large 1{sub s} can be extracted to substrates located in large D{sub S-T} of about 200 mm and even at high pressures p = 5 Pa. A physical comparison of the conventional magnetron (CM), UM and DSSD is also given. Considerable attention is also devoted to the effect of ion bombardment on properties of TiN films created in the sputtering system using DSSD. (author).

  4. On Tomonaga's theory of split-anode magnetrons

    Science.gov (United States)

    Dittrich, Walter

    2016-06-01

    This article offers a review of the history of radar research and its application in the 20th century. After describing the wartime work of Sin-Itiro Tomonaga and his theory of the cavity magnetron, we formulate the equations of motion of an electron in a cavity magnetron using action-angle variables. This means following the electron's path on its way from a cylindrical cathode moving toward a co-axial cylindrical anode in presence of a uniform magnetic field parallel to the common axis. After analyzing the situation without coupling to an external oscillatory electric field, we employ methods of canonical perturbation theory to find the resonance condition between the frequencies of the free theory ωr, ωϕ and the applied perturbing oscillatory frequency ω. A long-time averaging process will then eliminate the periodic terms in the equation for the now time-dependent action-angle variables. The terms that are no longer periodic will cause secular changes so that the canonical action-angle variables (J, δ) change in a way that the path of the electron will deform gradually so that it can reach the anode. How the ensemble of the initially randomly distributed electrons forms spokes and how their energy is conveyed to the cavity-field oscillation is the main focus of this article. Some remarks concerning the importance of results in QED and the invention of radar theory and application conclude the article.

  5. Some New Views on the Principles of Magnetron Sputtering

    Institute of Scientific and Technical Information of China (English)

    ZHAO Jia-xue; FANG Kai-ming; TONG Hong-hui

    2004-01-01

    In this paper, some common phenomena in magnetron sputtering are freshly analyzed and discussed on the basis of the motion of electrons in non-uniform orthogonal electric and magnetic fields. There exist magnetic confinements in three spatial dimensions on moving charged particles (including electrons) in this kind of non-uniform field. They are the longitudinal cycloidal motion, the horizontal simple harmonic-like motion (with varying amplitudes), and the vertical repelling action. The horizontal magnetic confinement in a mirror-like magnetic field keeps glow discharge lane completely parallel to the corridor of magnetic force lines, therefore only an effectively closed magnet array structure can form a relatively uniform and closed discharge lane. The main reasons for electrons' releasing from magnetic confinement are the vertical magnetic repelling force as well as a more and more weak confinement action in outer range etc. The dominant reasons for a comparatively low increase of substrate's temperature are that the density of bombarding electrons near the substrate is relatively low and their spatial distribution is relatively uniform (compared with that near the target surface). The erosion lane with an inverted Gauss's distribution shape on a magnetron sputtered target is due to that,with sputtering, the distribution width of the critical density of electrons shrinks continuously but the sputtering effect in the centerline of the corridor is always the most powerful.

  6. Simulation to Predict Target Erosion of Planar DC Magnetron

    Institute of Scientific and Technical Information of China (English)

    QIU Qingquan; LI Qingfu; SU Jingjing; JIAO Yu; FINLEY Jing

    2008-01-01

    Plasma properties in a planar DC magnetron system are simulated by a non-selfconsistent particle method in two dimensions.Through tracing the trajectories of the energetic electrons in the specified electric field and the magnetic field,and treating the collision process by Monte Carlo method,the spatial profile of ionization events can be obtained conveniently.Assuming that the ions speed up from the ionization points and bombard the target with the energy at these points,and according to the Yamamura/Tawara method,the target erosion can be predicted.The magnetic field is calculated by the finite element method,and the electric field is estimated according to the self-consistent simulation and measured results.The influence of the time step size on the target erosion profile is analysed first to find a proper step size.Then the influence of electric field estimated on the erosion profile is discussed.The erosion profile may become narrower if the sheath thickness is increased.Finally,considering the dynamic erosion process,the erosion profile may get wider over time for the magnetron with shunt bar.

  7. Development of new cylindrical magnetrons for industrial use

    CERN Document Server

    Clayton, B

    2000-01-01

    four-fold system. In an attempt to tackle this problem, a finite element model of the magnetic field generated by the magnetic assembly was built, run and verified. Changes were made to this model, and a new .magnet assembly was built and tested based on the results obtained. This did not lead to a final solution of the problem, but has set bounds within which the solution must lie. A number of alternative techniques were considered and tested with a view to the construction of a cylindrical sputtering device. This device was required to be capable of depositing tribological coatings inside approximately cylindrical substrates of diameters less than 100mm, in an industrial situation. A cylindrical magnetron device was designed, and constructed as a prototype, using a magnetic assembly inside a cylindrical target with outside diameter (o.d.) 40mm. Two alternative magnetic assemblies were tested, and found to have complimentary advantages. The magnetron characteristics of the device were tested, as were key pro...

  8. Small grain size zirconium-based coatings deposited by magnetron sputtering at low temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Jimenez, O., E-mail: omar.jimenez.udg@gmail.com [Departamento de Ingeniería de Proyectos, CUCEI, Universidad de Guadalajara, AP 307, CP 45101 Zapopan, Jal (Mexico); Department of Materials Science and Engineering, The University of Sheffield, Sheffield S1 3JD (United Kingdom); Audronis, M.; Leyland, A. [Department of Materials Science and Engineering, The University of Sheffield, Sheffield S1 3JD (United Kingdom); Flores, M.; Rodriguez, E. [Departamento de Ingeniería de Proyectos, CUCEI, Universidad de Guadalajara, AP 307, CP 45101 Zapopan, Jal (Mexico); Kanakis, K.; Matthews, A. [Department of Materials Science and Engineering, The University of Sheffield, Sheffield S1 3JD (United Kingdom)

    2015-09-30

    Hard, partly amorphous, ZrTiB(N) coatings were deposited by Physical Vapour Deposition (PVD) onto (111) silicon wafers at low substrate temperatures of 85 and 110 °C using Closed Field Unbalanced Magnetron Sputtering. A segmented rectangular sputter target composed of three pieces (Zr/TiB{sub 2}/Zr) was used as the source of evaporation of coating components. Two different substrate biases (i.e. floating potential and − 50 V) and N{sub 2} reactive-gas flow rates of 2, 4 and 6 sccm were employed as the main deposition parameter variables. The chemical composition, structure, morphology and mechanical properties were investigated using a variety of analytical techniques such as Glow-Discharge Optical Emission Spectroscopy, cross-sectional Scanning Electron Microscopy (SEM), Glancing Angle X-ray Diffraction (GAXRD) and nanoindentation. With other parameters fixed, coating properties were found to be dependent on the substrate negative bias and nitrogen flow rate. Linear scan profiles and SEM imaging revealed that all coatings were smooth, dense and featureless (in fracture cross section) with no apparent columnar morphology or macro-defects. GAXRD structural analysis revealed that mostly metallic phases were formed for coatings containing no nitrogen, whereas a solid solution (Zr,Ti)N single phase nitride was found in most of the reactively deposited coatings — exhibiting a very small grain size due to nitrogen and boron grain refinement effects. Hardness values from as low as 8.6 GPa up to a maximum of 25.9 GPa are related mainly to solid solution strengthening effects. The measured elastic moduli correlated with the trends in hardness behaviour; values in the range of 120–200 GPa were observed depending on the selected deposition parameters. Also, high H/E values (> 0.1) were achieved with several of the coatings.

  9. Reactive Hypoglycemia

    Science.gov (United States)

    ... from low blood sugar (hypoglycemia) that occurs while fasting. Signs and symptoms of reactive hypoglycemia may include ... and very important. It's also important to include physical activity in your daily routine. Your doctor can help ...

  10. Reactive Arthritis

    Directory of Open Access Journals (Sweden)

    Eren Erken

    2013-06-01

    Full Text Available Reactive arthritis is an acute, sterile, non-suppurative and inflammatory arthropaty which has occured as a result of an infectious processes, mostly after gastrointestinal and genitourinary tract infections. Reiter syndrome is a frequent type of reactive arthritis. Both reactive arthritis and Reiter syndrome belong to the group of seronegative spondyloarthropathies, associated with HLA-B27 positivity and characterized by ongoing inflammation after an infectious episode. The classical triad of Reiter syndrome is defined as arthritis, conjuctivitis and urethritis and is seen only in one third of patients with Reiter syndrome. Recently, seronegative asymmetric arthritis and typical extraarticular involvement are thought to be adequate for the diagnosis. However, there is no established criteria for the diagnosis of reactive arthritis and the number of randomized and controlled studies about the therapy is not enough. [Archives Medical Review Journal 2013; 22(3.000: 283-299

  11. Current status of high on-treatment platelet reactivity in patients with coronary or peripheral arterial disease:Mechanisms,evaluation and clinical implications

    Institute of Scientific and Technical Information of China (English)

    Stavros Spiliopoulos; Georgios Pastromas

    2015-01-01

    Antiplatelet therapy with aspirin or clopidogrel or both is the standard care for patients with proven coronary or peripheral arterial disease,especially those undergoing endovascular revascularization procedures. However,despite the administration of the antiplatelet regiments,some patients still experience recurrent cardiovascular ischemic events. So far,it is well documented by several studies that in vitro response of platelets may be extremely variable. Poor antiplatelet effect of clopidogrel or high on-treatment platelet reactivity(HTPR) is under investigation by numerous recent studies. This review article focuses on methods used for the ex vivo evaluation of HTPR,as well as on the possible underlying mechanisms and the clinical consequences of this entity. Alternative therapeutic options and future directions are also addressed.

  12. Fabrication of electrocatalytic Ta nanoparticles by reactive sputtering and ion soft landing

    Energy Technology Data Exchange (ETDEWEB)

    Johnson, Grant E.; Moser, Trevor; Engelhard, Mark; Browning, Nigel D.; Laskin, Julia

    2016-11-07

    About 40 years ago, it was shown that tungsten carbide exhibits similar catalytic behavior to Pt for certain commercially relevant reactions, thereby suggesting the possibility of cheaper and earth-abundant substitutes for costly and rare precious metal catalysts. In this work, reactive magnetron sputtering of Ta in the presence of three model hydrocarbons (2-butanol, heptane, and m-xylene) combined with gas aggregation and ion soft landing was employed to prepare organic-inorganic hybrid nanoparticles (NPs) on surfaces for evaluation of catalytic activity and durability. The electro-catalytic behavior of the NPs supported on glassy carbon was evaluated in acidic aqueous solution by cyclic voltammetry. The Ta-heptane and Ta-xylene NPs were revealed to be active and robust toward promotion of the oxygen reduction reaction, an important process occurring at the cathode in fuel cells. In comparison, pure Ta and Ta-butanol NPs were essentially unreactive. Characterization techniques including atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), and transmission electron microscopy (TEM) were applied to probe how different sputtering conditions such as the flow rates of gases, sputtering current, and aggregation length affect the properties of the NPs. AFM images reveal the focused size of the NPs as well as their preferential binding along the step edges of graphite surfaces. In comparison, TEM images of the same NPs on carbon grids show that they bind randomly to the surface with some agglomeration but little coalescence. The TEM images also reveal morphologies with crystalline cores surrounded by amorphous regions for NPs formed in the presence of 2-butanol and heptane. In contrast, NPs formed in the presence of m-xylene are amorphous throughout. XPS spectra indicate that while the percentage of Ta, C, and O in the NPs varies depending on the sputtering conditions and hydrocarbon employed, the electron binding energies of the elements are similar

  13. Improvements on the Stability and Operation of a Magnetron H- Ion Source

    Energy Technology Data Exchange (ETDEWEB)

    Sosa, A. [Fermilab; Bollinger, D. S. [Fermilab; Karns, P. R. [Fermilab; Tan, C. Y. [Fermilab

    2017-01-06

    The magnetron H- ion sources developed in the 1970s currently in operation at Fermilab provide beam to the rest of the accelerator complex. A series of modifications to these sources have been tested in a dedicated offline test stand with the aim of improving different operational issues. The solenoid type gas valve was tested as an alternative to the piezoelectric gas valve in order to avoid its temperature dependence. A new cesium oven was designed and tested in order to avoid glass pieces that were present with the previous oven, improve thermal insulation and fine tune its temperature. A current-regulated arc modulator was developed to run the ion source at a constant arc current, providing very stable beam outputs during operations. In order to reduce beam noise, the addition of small amounts of N2 gas was explored, as well as testing different cathode shapes with increasing plasma volume. This paper summarizes the studies and modifications done in the source over the last three years with the aim of improving its stability, reliability and overall performance.

  14. GaAs Films Prepared by RF-Magnetron Sputtering

    Energy Technology Data Exchange (ETDEWEB)

    L.H. Ouyang; D.L. Rode; T. Zulkifli; B. Abraham-Shrauner; N. Lewis; M.R. Freeman

    2001-08-01

    The authors reported on the optical absorption, adhesion, and microstructure of RF-magnetron sputtered films of hydrogenated amorphous and microcrystalline GaAs films for the 1 to 25 {micro}m infrared wavelength rate. Sputtering parameters which were varied include sputtering power, temperature and pressure, and hydrogen sputtering-gas concentration. TEM results show a sharp transition from purely amorphous GaAs to a mixture of microcrystalline GaAs in an amorphous matrix at 34 {+-} 2 C. By optimizing the sputtering parameters, the optical absorption coefficient can be decreased below 100 cm{sup -1} for wavelengths greater than about 1.25 {micro}m. These results represent the lowest reported values of optical absorption for sputtered films of GaAs directly measured by spectrophotometry for the near-infrared wavelength region.

  15. Self-hardening effect of CrAlN/BN nanocomposite films deposited by direct current and radio frequency reactive cosputtering

    Energy Technology Data Exchange (ETDEWEB)

    Nose, Masateru, E-mail: nose@tad.u-toyama.ac.jp [Faculty of Art and Design, University of Toyama, 180 Futakami, Takaoka-shi, Toyama 933-8588 (Japan); Chiou, Wen-An [NISP Lab., NanoCenter, University of Maryland, College Park, MD 20742-2831 (United States); Kawabata, Tokimasa [School of Science and Engineering, University of Toyama, Toyama-shi, Toyama 930-8555 (Japan); Hatano, Yuji [Hydrogen Isotope Research Center, University of Toyama, Toyama-shi, Toyama 930-8555 (Japan); Matsuda, Kenji [School of Science and Engineering, University of Toyama, Toyama-shi, Toyama 930-8555 (Japan)

    2012-11-15

    A CrAlN/18 vol.% BN nanocomposite film was deposited on substrate by reactive co-sputtering. The films showed an increase of about 30% in indentation hardness and achieved a maximum hardness of approximately 50 GPa after annealing at 800 Degree-Sign C in air. In contrast, the indentation hardness barely changed when the film sample was annealed at 800 Degree-Sign C in nitrogen and argon atmosphere. High-resolution transmission electron microscopy (HRTEM) images revealed that the uppermost layer was characterized by amorphous materials with embedded nanocrystalline particles (occurring at less than {approx} 50 nm below surface). Energy dispersive X-ray spectroscopy (EDS) line profiles of cross-sectional thin films showed a high concentration of oxygen in the uppermost layer of the annealed sample. The indentation hardness of the air-annealed sample was measured by Ar{sup +} ion sputtering before and after etching to the depth at 200 nm from the annealed surface. The hardness decreased from approximately 48 GPa to 43 GPa, which was the same level as the as-deposited films. These results indicate that oxidization of the film surface could be one of the factors responsible for the self-hardening of the CrAlN/BN film.

  16. Effect of annealing temperature on the properties of pulsed magnetron sputtered nanocrystalline Ag:SnO{sub 2} films

    Energy Technology Data Exchange (ETDEWEB)

    Reddy, A. Sivasankar [SEG-CEMUC, Department of Mechanical Engineering, University of Coimbra, 3030-788 Coimbra (Portugal); Division of Advanced Materials Engineering, Kongju National University, Budaedong, Cheonan City (Korea, Republic of); Figueiredo, N.M. [SEG-CEMUC, Department of Mechanical Engineering, University of Coimbra, 3030-788 Coimbra (Portugal); Cho, H.C.; Lee, K.S. [Division of Advanced Materials Engineering, Kongju National University, Budaedong, Cheonan City (Korea, Republic of); Cavaleiro, A., E-mail: albano.cavaleiro@dem.uc.pt [SEG-CEMUC, Department of Mechanical Engineering, University of Coimbra, 3030-788 Coimbra (Portugal)

    2012-04-16

    Highlights: Black-Right-Pointing-Pointer The nanocrystalline Ag:SnO{sub 2} films were prepared by pulsed direct current magnetron sputtering. Black-Right-Pointing-Pointer After annealing, the homogeneity and smoothness of the films was improved. Black-Right-Pointing-Pointer The as deposited films exhibited the highest optical transmittance of 95% with band gap of 3.23 eV. Black-Right-Pointing-Pointer The low electrical resistivity of 0.007 {Omega} cm was obtained at annealing temperature of 500 Degree-Sign C. - Abstract: Ag doped SnO{sub 2} (Ag:SnO{sub 2}) films were prepared on glass substrates by pulsed dc magnetron sputtering. The effect of thermal annealing treatments on the physical properties of the films was investigated. Several analytical techniques such as X-ray diffraction, electron probe microanalysis, scanning electron microscopy, atomic force microscopy, four-point probe and double beam spectrophotometer were used to examine the changes in structural, compositional, surface morphology, electrical and optical properties. XRD results showed that the films were grown with (1 1 0) preferential orientation with an average grain size in the range from 4.8 to 8.9 nm. The smoothness of the films increased with annealing temperature. The films annealed at 500 Degree-Sign C presented an electrical resistivity of 0.007 {Omega} cm. The as deposited films exhibited the highest optical transmittance of 95% with band gap of 3.23 eV.

  17. Intra- and inter-clade cross-reactivity by HIV-1 Gag specific T-cells reveals exclusive and commonly targeted regions: implications for current vaccine trials.

    Directory of Open Access Journals (Sweden)

    Lycias Zembe

    Full Text Available The genetic diversity of HIV-1 across the globe is a major challenge for developing an HIV vaccine. To facilitate immunogen design, it is important to characterize clusters of commonly targeted T-cell epitopes across different HIV clades. To address this, we examined 39 HIV-1 clade C infected individuals for IFN-γ Gag-specific T-cell responses using five sets of overlapping peptides, two sets matching clade C vaccine candidates derived from strains from South Africa and China, and three peptide sets corresponding to consensus clades A, B, and D sequences. The magnitude and breadth of T-cell responses against the two clade C peptide sets did not differ, however clade C peptides were preferentially recognized compared to the other peptide sets. A total of 84 peptides were recognized, of which 19 were exclusively from clade C, 8 exclusively from clade B, one peptide each from A and D and 17 were commonly recognized by clade A, B, C and D. The entropy of the exclusively recognized peptides was significantly higher than that of commonly recognized peptides (p = 0.0128 and the median peptide processing scores were significantly higher for the peptide variants recognized versus those not recognized (p = 0.0001. Consistent with these results, the predicted Major Histocompatibility Complex Class I IC(50 values were significantly lower for the recognized peptide variants compared to those not recognized in the ELISPOT assay (p<0.0001, suggesting that peptide variation between clades, resulting in lack of cross-clade recognition, has been shaped by host immune selection pressure. Overall, our study shows that clade C infected individuals recognize clade C peptides with greater frequency and higher magnitude than other clades, and that a selection of highly conserved epitope regions within Gag are commonly recognized and give rise to cross-clade reactivities.

  18. NOVEL TECHNIQUE OF POWER CONTROL IN MAGNETRON TRANSMITTERS FOR INTENSE ACCELERATORS

    Energy Technology Data Exchange (ETDEWEB)

    Kazakevich, G. [MUONS Inc., Batavia; Johnson, R. [MUONS Inc., Batavia; Neubauer, M.; Lebedev, V. [Fermilab; Schappert, W. [Fermilab; Yakovlev, V. [Fermilab

    2016-10-21

    A novel concept of a high-power magnetron transmitter allowing dynamic phase and power control at the frequency of locking signal is proposed. The transmitter compensating parasitic phase and amplitude modulations inherent in Superconducting RF (SRF) cavities within closed feedback loops is intended for powering of the intensity-frontier superconducting accelerators. The con- cept uses magnetrons driven by a sufficient resonant (in- jection-locking) signal and fed by the voltage which can be below the threshold of self-excitation. This provides an extended range of power control in a single magnetron at highest efficiency minimizing the cost of RF power unit and the operation cost. Proof-of-principle of the proposed concept demonstrated in pulsed and CW regimes with 2.45 GHz, 1kW magnetrons is discussed here. A conceptual scheme of the high-power transmitter allowing the dynamic wide-band phase and y power controls is presented and discussed.

  19. Boron-rich plasma by high power impulse magnetron sputtering of lanthanum hexaboride

    Energy Technology Data Exchange (ETDEWEB)

    Oks, Efim M. [State University of Control Systems and Radioelectronics, Tomsk (Russian Federation); Anders, Andre [Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)

    2012-10-15

    Boron-rich plasmas have been obtained using a LaB{sub 6} target in a high power impulse sputtering (HiPIMS) system. The presence of {sup 10}B{sup +}, {sup 11}B{sup +}, Ar{sup 2+}, Ar{sup +}, La{sup 2+}, and La{sup +} and traces of La{sup 3+}, {sup 12}C{sup +}, {sup 14}N{sup +}, and {sup 16}O{sup +} have been detected using an integrated mass and energy spectrometer. Peak currents as low as 20 A were sufficient to obtain plasma dominated by {sup 11}B{sup +} from a 5 cm planar magnetron. The ion energy distribution function for boron exhibits an energetic tail extending over several 10 eV, while argon shows a pronounced peak at low energy (some eV). This is in agreement with models that consider sputtering (B, La) and gas supply (from background and 'recycling'). Strong voltage oscillations develop at high current, greatly affecting power dissipation and plasma properties.

  20. Fabrication and characterization of He-charged ODS-FeCrNi films deposited by a radio-frequency plasma magnetron sputtering technique

    Science.gov (United States)

    Liang, SONG; Xianping, WANG; Le, WANG; Ying, ZHANG; Wang, LIU; Weibing, JIANG; Tao, ZHANG; Qianfeng, FANG; Changsong, LIU

    2017-04-01

    He-charged oxide dispersion strengthened (ODS) FeCrNi films were prepared by a radio-frequency (RF) plasma magnetron sputtering method in a He and Ar mixed atmosphere at 150 °C. As a comparison, He-charged FeCrNi films were also fabricated at the same conditions through direct current (DC) plasma magnetron sputtering. The doping of He atoms and Y2O3 in the FeCrNi films was realized by the high backscattered rate of He ions and Y2O3/FeCrNi composite target sputtering method, respectively. Inductive coupled plasma (ICP) and x-ray photoelectron spectroscopy (XPS) analysis confirmed the existence of Y2O3 in FeCrNi films, and Y2O3 content hardly changed with sputtering He/Ar ratio. Cross-sectional scanning electron microscopy (SEM) shows that the FeCrNi films were composed of dense columnar nanocrystallines and the thickness of the films was obviously dependent on He/Ar ratio. Nanoindentation measurements revealed that the FeCrNi films fabricated through DC/RF plasma magnetron sputtering methods exhibited similar hardness values at each He/Ar ratio, while the dispersion of Y2O3 apparently increased the hardness of the films. Elastic recoil detection (ERD) showed that DC/RF magnetron sputtered FeCrNi films contained similar He amounts (∼17 at.%). Compared with the minimal change of He level with depth in DC-sputtered films, the He amount decreases gradually in depth in the RF-sputtered films. The Y2O3-doped FeCrNi films were shown to exhibit much smaller amounts of He owing to the lower backscattering possibility of Y2O3 and the inhibition effect of nano-sized Y2O3 particles on the He element.

  1. A Compact, Pi-Mode Extraction Scheme for the Axial B-Field Recirculating Planar Magnetron

    Science.gov (United States)

    2012-07-23

    Figure 4). Thus, in a planar magnetron, the minimum phase velocity, vph , to stay above cutoff in the rectangular waveguide is ℎ = ...as magnetrons, electrons must be accelerated such that they are in synchronism with the phase velocity, vph , of the electromagnetic wave for an...is also likely to be a factor in the waveguide power-loading profile data displayed in Figure 10 (a). It is expected that a careful optimization of

  2. Fabrication and Electrical Characterization of the Si/ZnO/ZnO:Al Structure Deposited by RF-Magnetron Sputtering

    Science.gov (United States)

    Alaya, A.; Djessas, K.; El Mir, L.; Khirouni, K.

    2016-10-01

    The electrical transport properties of the structures of Si(p)/ZnO(i)/ZnO: Al(3%) and Si(p)/PS/ZnO(i)/ZnO: Al(3%) deposited by radio-frequency-magnetron sputtering were investigated and compared by using current-voltage and impedance spectroscopy measurements in a wide temperature range of 80-300 K. Aluminum-doped ZnO is considered to be one of the most important transparent conducting oxide materials due to its high conductivity, good transparency and low cost. From the current-voltage-temperature ( I- V- T) characteristics, it was found that both structures had a good rectifying behavior. This behavior decreases according to the porous silicon layer. The variation of the conductance with frequency indicates the semiconducting behavior and superposition of different conduction mechanisms. The insertion of the porous silicon layer results in a decrease of conductivity, which is attributed to reduced conductivity of defect-rich porous silicon.

  3. Pulsed Power Generators For Two-section Lia Relativistic Magnetron Driver

    CERN Document Server

    Agafonov, A V; Pevchev, V P

    2004-01-01

    Two prototypes of pulsed power generators for a two-sectional LIA - specialized driver of a relativistic magnetron were constructed and tested. The driver for the double-sided powering of a relativistic magnetron consists of two identical sets of induction modules (two sections of LIA) with inner electrodes - vacuum adders connected to both sides of a coaxial magnetron. It provides the symmetric power flowing in a magnetron and a possibility of localising of the electron flow in magnetron interaction region. The first generator designed for a small-scale laboratory installation provides the output pulses of 100 ns in duration with voltage amplitude of 50 kV at repetition rate of 1 pps. The construction of the generator is based on the application of experimental capacitor banks designed as a pulse forming line with the next parameters: charging voltage - 80 kV, impedance - 1,7 Ohm, pulse duration - 80 ns at a matched load. The second generator was designed for 1 MV integrated LIA - magnetron system. It cons...

  4. A Two-stage injection-locked magnetron for accelerators with superconducting cavities

    CERN Document Server

    Kazakevich, Grigory; Flanagan, Gene; Marhauser, Frank; Neubauer, Mike; Yakovlev, Vyacheslav; Chase, Brian; Nagaitsev, Sergey; Pasquinelli, Ralph; Solyak, Nikolay; Tupikov, Vitali; Wolff, Daniel

    2013-01-01

    A concept for a two-stage injection-locked CW magnetron intended to drive Superconducting Cavities (SC) for intensity-frontier accelerators has been proposed. The concept considers two magnetrons in which the output power differs by 15-20 dB and the lower power magnetron being frequency-locked from an external source locks the higher power magnetron. The injection-locked two-stage CW magnetron can be used as an RF power source for Fermilab's Project-X to feed separately each of the 1.3 GHz SC of the 8 GeV pulsed linac. We expect output/locking power ratio of about 30-40 dB assuming operation in a pulsed mode with pulse duration of ~ 8 ms and repetition rate of 10 Hz. The experimental setup of a two-stage magnetron utilising CW, S-band, 1 kW tubes operating at pulse duration of 1-10 ms, and the obtained results are presented and discussed in this paper.

  5. [Low reactive laser therapy].

    Science.gov (United States)

    Saeki, Shigeru

    2012-07-01

    The type, characteristics and effect of low reactive laser equipment used for pain treatment in Japan are described in this section. Currently, low reactive laser therapy equipments marketed and used in Japan include diode laser therapeutic device with semiconductor as a medium consisting of aluminum, gallium and arsenic. Low reactive laser equipment comes in three models, the first type has a capacity of generating 1,000 mW output, and the second type has a capacity of generating 10 W output. The third type has four channels of output, 60, 100, 140 and 180 mW and we can select one channel out of the four channels. This model is also used as a portable device because of its light weight, and we can carry it to wards and to the outside of the hospital. Semiconductor laser has the capacity of deepest penetration and the effect tends to increase proportionally to the increasing output. Low reactive laser therapy is less invasive and lower incidence of complications. Although low reactive laser therapy might be effective for various pain disorders, the effect is different depending on the type of pain. We should keep in mind that this therapy will not give good pain relief equally in all patients with pain.

  6. Reactive Systems

    DEFF Research Database (Denmark)

    Aceto, Luca; Ingolfsdottir, Anna; Larsen, Kim Guldstrand

    A reactive system comprises networks of computing components, achieving their goals through interaction among themselves and their environment. Thus even relatively small systems may exhibit unexpectedly complex behaviours. As moreover reactive systems are often used in safety critical systems......, the need for mathematically based formal methodology is increasingly important. There are many books that look at particular methodologies for such systems. This book offers a more balanced introduction for graduate students and describes the various approaches, their strengths and weaknesses, and when...... they are best used. Milner's CCS and its operational semantics are introduced, together with the notions of behavioural equivalences based on bisimulation techniques and with recursive extensions of Hennessy-Milner logic. In the second part of the book, the presented theories are extended to take timing issues...

  7. DEPOSITION OF NIOBIUM AND OTHER SUPERCONDUCTING MATERIALS WITH HIGH POWER IMPULSE MAGNETRON SPUTTERING: CONCEPT AND FIRST RESULTS

    Energy Technology Data Exchange (ETDEWEB)

    High Current Electronics Institute, Tomsk, Russia; Anders, Andre; Mendelsberg, Rueben J.; Lim, Sunnie; Mentink, Matthijs; Slack, Jonathan L.; Wallig, Joseph G.; Nollau, Alexander V.; Yushkov, Georgy Yu.

    2011-07-24

    Niobium coatings on copper cavities have been considered as a cost-efficient replacement of bulk niobium RF cavities, however, coatings made by magnetron sputtering have not quite lived up to high expectations due to Q-slope and other issues. High power impulse magnetron sputtering (HIPIMS) is a promising emerging coatings technology which combines magnetron sputtering with a pulsed power approach. The magnetron is turned into a metal plasma source by using very high peak power density of ~ 1 kW/cm{sup 2}. In this contribution, the cavity coatings concept with HIPIMS is explained. A system with two cylindrical, movable magnetrons was set up with custom magnetrons small enough to be inserted into 1.3 GHz cavities. Preliminary data on niobium HIPIMS plasma and the resulting coatings are presented. The HIPIMS approach has the potential to be extended to film systems beyond niobium, including other superconducting materials and/or multilayer systems.

  8. Reactive spark plasma sintering of MgB2 in nitrogen atmosphere for the enhancement of the high-field critical current density

    Science.gov (United States)

    Badica, P.; Burdusel, M.; Popa, S.; Pasuk, I.; Ivan, I.; Borodianska, H.; Vasylkiv, O.; Kuncser, A.; Ionescu, A. M.; Miu, L.; Aldica, G.

    2016-10-01

    High density bulks (97%-99%) of MgB2 were prepared by spark plasma sintering (SPS) in nitrogen (N2) atmosphere for different heating rates (10, 20 and 100 °C min-1) and compared with reference samples processed in vacuum and Ar. N2 reacts with MgB2 and forms MgB9N along the MgB2 grain boundaries. The high-field critical current density is enhanced for the sample processed in N2 with a heating rate of 100 °C min-1. At 2-35 K, this sample shows the strongest contribution of the grain boundary pinning (GBP). All samples are in the point pinning (PP) limit and by increasing temperature the GBP contribution decreases.

  9. Stoichiometric silicon oxynitride thin films reactively sputtered in Ar/N2O plasmas by HiPIMS

    Science.gov (United States)

    Hänninen, Tuomas; Schmidt, Susann; Wissting, Jonas; Jensen, Jens; Hultman, Lars; Högberg, Hans

    2016-04-01

    Silicon oxynitride (SiO x N y , x=0.2-1.3, y=0.2 -0.7) thin films were synthesized by reactive high power impulse magnetron sputtering from a pure silicon target in Ar/N2O atmospheres. It was found that the composition of the material can be controlled by the reactive gas flow and the average target power. X-ray photoelectron spectroscopy (XPS) shows that high average powers result in more silicon-rich films, while lower target powers yield silicon-oxide-like material due to more pronounced target poisoning. The amount of nitrogen in the films can be controlled by the percentage of nitrous oxide in the working gas. The nitrogen content remains at a constant level while the target is operated in the transition region between metallic and poisoned target surface conditions. The extent of target poisoning is gauged by the changes in peak target current under the different deposition conditions. XPS also shows that varying concentrations and ratios of oxygen and nitrogen in the films result in film chemical bonding structures ranging from silicon-rich to stoichiometric silicon oxynitrides having no observable Si-Si bond contributions. Spectroscopic ellipsometry shows that the film optical properties depend on the amount and ratio of oxygen and nitrogen in the compound, with film refractive indices measured at 633 nm ranging between those of SiO2 and Si3N4.

  10. Controllable transition from positive space charge to negative space charge in an inverted cylindrical magnetron

    Energy Technology Data Exchange (ETDEWEB)

    Rane, R., E-mail: ramu@ipr.res.in; Ranjan, M.; Mukherjee, S. [FCIPT, Institute for Plasma Research, Gandhinagar-382044 (India); Bandyopadhyay, M. [ITER-India, Institute for Plasma Research, Gandhinagar-382044 (India)

    2016-01-15

    The combined effect of magnetic field (B), gas pressure (P), and the corresponding discharge voltage on the discharge properties of argon in inverted cylindrical magnetron has been investigated. In the experiment, anode is biased with continuous 10 ms sinusoidal half wave. It is observed that at a comparatively higher magnetic field (i.e., >200 gauss) and lower operating pressure (i.e., <1 × 10{sup −3} mbar), the discharge extinguishes and demands a high voltage to reignite. Discharge current increases with increase in magnetic field and starts reducing at sufficiently higher magnetic field for a particular discharge voltage due to restricted electron diffusion towards the anode. It is observed that B/P ratio plays an important role in sustaining the discharge and is constant for a discharge voltage. The discharge is transformed to negative space charge regime from positive space charge regime at certain B/P ratio and this ratio varies linearly with the discharge voltage. The space charge reversal is indicated by the radial profile of the floating potential and plasma potential in between two electrodes for different magnetic fields. At a particular higher magnetic field (beyond 100 gauss), the floating potential increases gradually with the radial distance from cathode, whereas it remains almost constant at lower magnetic field.

  11. The behaviour of arcs in carbon mixed-mode high-power impulse magnetron sputtering

    Science.gov (United States)

    Tucker, M. D.; Putman, K. J.; Ganesan, R.; Lattemann, M.; Stueber, M.; Ulrich, S.; Bilek, M. M. M.; McKenzie, D. R.; Marks, N. A.

    2017-04-01

    Mixed-mode deposition of carbon is an extension of high-power impulse magnetron sputtering in which a short-lived arc is deliberately allowed to ignite on the target surface to increase the ionised fraction of carbon in the deposition flux. Here we investigate the ignition and evolution of these arcs and examine their behaviour for different conditions of argon pressure, power supply voltage, and current. We find that mixed-mode deposition is sensitive to the condition of the target surface, and changing the operating parameters causes changes in the target surface condition which themselves affect the discharge in a process of negative feedback. Initially the arcs are evenly distributed on the target racetrack, but after a long period of operation the mode of erosion changes and arcs become localised in a small region, resulting in a pronounced nodular structure. We also quantify macroparticle generation and observe a power-law size distribution typical of arc discharges. Fewer particles are generated for operation at lower Ar pressure when the arc spot velocity is higher.

  12. Characteristics of HT-LiCoO2 cathode films synthesized by Rf magnetron sputtering

    Science.gov (United States)

    Kumar, P. Jeevan; Babu, K. Jayanth; Hussain, O. M.

    2012-06-01

    Polycrystalline HT-LiCoO2 films were successfully synthesized by rf magnetron sputtering. The films were characterized by the studying their phase, structure, and morphology using ex-situ measurements of X-ray diffractometry (XRD), Raman Spectroscopy, Atomic force micrometry (AFM). Electrochemical performance evaluation indicated that the as grown LiCoO2 films The anodic electrochemical performances of the films have been evaluated by cyclic voltammetry (CV) at a scan rate of 0.5 mV/s and by galvanostatic cycling, with lithium metal as the counter and the reference electrode, and cycled in the range of 3.0 - 4.2 V at a current density of 50 μA/cm2. The films show a discharge capacity at the 20th cycle of 58 μAh cm-2μm- Keywords: LiCoO which exhibited excellent capacity retention with a small capacity fade which exhibited excellent capacity retention with a small capacity fade.

  13. Superior biofunctionality of dental implant fixtures uniformly coated with durable bioglass films by magnetron sputtering.

    Science.gov (United States)

    Popa, A C; Stan, G E; Enculescu, M; Tanase, C; Tulyaganov, D U; Ferreira, J M F

    2015-11-01

    Bioactive glasses are currently considered the suitable candidates to stir the quest for a new generation of osseous implants with superior biological/functional performance. In congruence with this vision, this contribution aims to introduce a reliable technological recipe for coating fairly complex 3D-shaped implants (e.g. dental screws) with uniform and mechanical resistant bioactive glass films by the radio-frequency magnetron sputtering method. The mechanical reliability of the bioactive glass films applied to real Ti dental implant fixtures has been evaluated by a procedure comprised of "cold" implantation in pig mandibular bone from a dead animal, followed by immediate tension-free extraction tests. The effects of the complex mechanical strains occurring during implantation were analysed by scanning electron microscopy coupled with electron dispersive spectroscopy. Extensive biocompatibility assays (MTS, immunofluorescence, Western blot) revealed that the bioactive glass films stimulated strong cellular adhesion and proliferation of human dental pulp stem cells, without promoting their differentiation. The ability of the implant coatings to conserve a healthy stem cell pool is promising to further endorse the fabrication of new osseointegration implant designs with extended lifetime.

  14. Novel high power impulse magnetron sputtering enhanced by an auxiliary electrical field.

    Science.gov (United States)

    Li, Chunwei; Tian, Xiubo

    2016-08-01

    The high power impulse magnetron sputtering (HIPIMS) technique is a novel highly ionized physical vapor deposition method with a high application potential. However, the electron utilization efficiency during sputtering is rather low and the metal particle ionization rate needs to be considerably improved to allow for a large-scale industrial application. Therefore, we enhanced the HIPIMS technique by simultaneously applying an electric field (EF-HIPIMS). The effect of the electric field on the discharge process was studied using a current sensor and an optical emission spectrometer. Furthermore, the spatial distribution of the electric potential and electric field during the EF-HIPIMS process was simulated using the ANSYS software. The results indicate that a higher electron utilization efficiency and a higher particle ionization rate could be achieved. The auxiliary anode obviously changed the distribution of the electric potential and the electric field in the discharge region, which increased the plasma density and enhanced the degree of ionization of the vanadium and argon gas. Vanadium films were deposited to further compare both techniques, and the morphology of the prepared films was investigated by scanning electron microscopy. The films showed a smaller crystal grain size and a denser growth structure when the electric field was applied during the discharge process.

  15. Distance-dependent plasma composition and ion energy in high power impulse magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Ehiasarian, Arutiun P; Andersson, Joakim; Anders, Andr& #233

    2010-04-18

    The plasma composition of high power impulse magnetron sputtering (HIPIMS) has been studied for titanium and chromium targets using a combined energy analyser and quadrupole mass spectrometer. Measurements were done at distances from 50 to 300 mm from the sputtering target. Ti and Cr are similar in atomic mass but have significantly different sputter yields, which gives interesting clues on the effect of the target on plasma generation and transport of atoms. The Ti and Cr HIPIMS plasmas operated at a peak target current density of ~;;0.5 A cm-2. The measurements of the argon and metal ion content as well as the ion energy distribution functions showed that (1) singly and doubly charged ions were found for argon as well as for the target metal, (2) the majority of ions were singly charged argon for both metals at all distances investigated, (3) the Cr ion density was maintained to distances further from the target than Ti. Gas rarefaction was identified as a main factor promoting transport of metal ions, with the stronger effect observed for Cr, the material with higher sputter yield. Cr ions were found to displace a significant portion of the gas ions, whereas this was less evident in the Ti case. The observations indicate that the presence of metal vapour promotes charge exchange and reduces the electron temperature and thereby practically prevents the production of Ar2+ ions near the target. The content of higher charge states of metal ions depends on the probability of charge exchange with argon.

  16. Time-Dependent 2D Modeling of Magnetron Plasma Torch in Turbulent Flow

    Institute of Scientific and Technical Information of China (English)

    LI Lincun; XIA Weidong

    2008-01-01

    A theoretical model is presented to describe the electromagnetic, heat transfer and fluid flow phenomena within a magnetron plasma torch and in the resultant plume, by using a commercial computational fluid dynamics (CFD) code FLUENT. Specific calculations are pre-sented for a pure argon system (i.e., an argon plasma discharging into an argon environment), operated in a turbulent mode. An important finding of this work is that the external axial mag-netic field (AMF) may have a significant effect on the behavior of arc plasma and thus affects the resulting plume. The AMF impels the plasma to retract axially and expand radially. As a result, the plasma intensity distribution on the cross section of torch seems to be more uniform. Numerical results also show that with AMF, the highest plasma temperature decreases and the anode arc root moves upstream significantly, while the current density distribution at the anode is more concentrated with a higher peak value. In addition, the use of AMF then induces a strong backflow at the torch spout and its magnitude increases with the AMF strength but decreases with the inlet gas velocity.

  17. MICROSTRUCTURE AND PROPERTIES OF ANNEALED ZnO THIN FILMS DEPOSITED BY MAGNETRON SPUTTERING

    Institute of Scientific and Technical Information of China (English)

    J. Lee; W. Gao; Z. Li; M. Hodgson; A. Asadov; J. Metson

    2005-01-01

    ZnO thin films were deposited on a glass substrate by dc (direct current) and rf (radio frequency) magnetron sputtering. Post-deposition annealing was performed in different atmospheres and at different temperatures. The correlation of the annealing conditions with the microstructure and properties of the ZnO films were investigated by ultraviolet-visible spectroscopy, X-ray diffraction, conductivity measurement and scanning electron microscopy. Only the strong 002peak could be observed by X-ray diffraction. The post-deposition annealing of ZnO films was found to alter the film's microstructure and properties, including crystallinity, porosity, grain size, internal stress level and resistivity. It was also found that after annealing, the conductivity of poorly conductive samples often improved. However, annealing does not improve the conductivity of samples with high conductivity prior to annealing. The resistivity of as-grown films annealing on the conductivity of ZnO, it is believed that annealing may alter the presence and distribution of oxygen defects, reduce the lattice stress, cause diffusion, grain coarsening and recrystallization. Annealing will reduce the density of grain boundaries in less dense films,which may decrease the resistivity of the films. On the other hand, annealing may also increase the porosity of thin films, leading to an increase in resistivity.

  18. Composition and structure variation for magnetron sputtered tantalum oxynitride thin films, as function of deposition parameters

    Energy Technology Data Exchange (ETDEWEB)

    Cristea, D.; Pătru, M.; Crisan, A.; Munteanu, D. [Department of Materials Science, Transilvania University, 500036 Brasov (Romania); Crăciun, D. [Laser Department, National Institute for Laser, Plasma, and Radiation Physics, Magurele (Romania); Barradas, N.P. [Centro de Ciências e Tecnologias Nucleares, Instituto Superior Técnico, Universidade de Lisboa, E.N. 10 ao km 139,7, 2695-066 Bobadela LRS (Portugal); Alves, E. [Instituto de Plasmas e Fusão Nuclear, Instituto Superior Técnico, Universidade de Lisboa, E.N. 10 ao km 139,7, 2695-066 Bobadela LRS (Portugal); Apreutesei, M. [Université de Lyon, Institut des Nanotechnologies de Lyon INL-UMR 5270, CNRS, Ecole Centrale de Lyon, Ecully F-69134 (France); MATEIS Laboratory-INSA de Lyon, Bât. B. Pascal, 7 Avenue Jean Capelle, 69621 Villeurbanne Cedex (France); Moura, C. [Center of Physics, University of Minho, Campus de Gualtar, 4710-057 Braga (Portugal); Cunha, L., E-mail: lcunha@fisica.uminho.pt [Center of Physics, University of Minho, Campus de Gualtar, 4710-057 Braga (Portugal)

    2015-12-15

    Highlights: • Structural evolution from β-Ta, to fcc-Ta(O,N), to amorphous Ta{sub 2}O{sub 5} with increasing P(N{sub 2} + O{sub 2}). • The substrate bias influences the N content, but does not influence the O content of the films. • The structural features of the films appear at lower P(N{sub 2} + O{sub 2}) when produced with grounded substrate. - Abstract: Tantalum oxynitride thin films were produced by magnetron sputtering. The films were deposited using a pure Ta target and a working atmosphere with a constant N{sub 2}/O{sub 2} ratio. The choice of this constant ratio limits the study concerning the influence of each reactive gas, but allows a deeper understanding of the aspects related to the affinity of Ta to the non-metallic elements and it is economically advantageous. This work begins by analysing the data obtained directly from the film deposition stage, followed by the analysis of the morphology, composition and structure. For a better understanding regarding the influence of the deposition parameters, the analyses are presented by using the following criterion: the films were divided into two sets, one of them produced with grounded substrate holder and the other with a polarization of −50 V. Each one of these sets was produced with different partial pressure of the reactive gases P(N{sub 2} + O{sub 2}). All the films exhibited a O/N ratio higher than the N/O ratio in the deposition chamber atmosphere. In the case of the films produced with grounded substrate holder, a strong increase of the O content is observed, associated to the strong decrease of the N content, when P(N{sub 2} + O{sub 2}) is higher than 0.13 Pa. The higher Ta affinity for O strongly influences the structural evolution of the films. Grazing incidence X-ray diffraction showed that the lower partial pressure films were crystalline, while X-ray reflectivity studies found out that the density of the films depended on the deposition conditions: the higher the gas pressure, the

  19. A Tariff for Reactive Power

    Energy Technology Data Exchange (ETDEWEB)

    Kueck, John D [ORNL; Kirby, Brendan J [ORNL; Li, Fangxing [ORNL; Tufon, Christopher [Pacific Gas and Electric Company; Isemonger, Alan [California Independent System Operator

    2008-07-01

    Two kinds of power are required to operate an electric power system: real power, measured in watts, and reactive power, measured in volt-amperes reactive or VARs. Reactive power supply is one of a class of power system reliability services collectively known as ancillary services, and is essential for the reliable operation of the bulk power system. Reactive power flows when current leads or lags behind voltage. Typically, the current in a distribution system lags behind voltage because of inductive loads such as motors. Reactive power flow wastes energy and capacity and causes voltage droop. To correct lagging power flow, leading reactive power (current leading voltage) is supplied to bring the current into phase with voltage. When the current is in phase with voltage, there is a reduction in system losses, an increase in system capacity, and a rise in voltage. Reactive power can be supplied from either static or dynamic VAR sources. Static sources are typically transmission and distribution equipment, such as capacitors at substations, and their cost has historically been included in the revenue requirement of the transmission operator (TO), and recovered through cost-of-service rates. By contrast, dynamic sources are typically generators capable of producing variable levels of reactive power by automatically controlling the generator to regulate voltage. Transmission system devices such as synchronous condensers can also provide dynamic reactive power. A class of solid state devices (called flexible AC transmission system devices or FACTs) can provide dynamic reactive power. One specific device has the unfortunate name of static VAR compensator (SVC), where 'static' refers to the solid state nature of the device (it does not include rotating equipment) and not to the production of static reactive power. Dynamic sources at the distribution level, while more costly would be very useful in helping to regulate local voltage. Local voltage regulation would

  20. On Tomonaga's Theory of Split-Anode Magnetrons

    CERN Document Server

    Dittrich, Walter

    2016-01-01

    This article is meant to formulate the equations of motion of an electron in a cavity magnetron using action-angle variables. This means following the electron's path on its way from a cylindrical cathode moving toward a co-axial cylindrical anode in presence of a uniform magnetic field parallel to the common axis. After analyzing the situation without coupling to an external oscillatory electric field, we employ methods of canonical perturbation theory to find the resonance condition between the frequencies of the free theory w_r, w_phi and the applied perturbing oscillatory frequency w. A long-time averaging process will then eliminate the periodic terms in the equation for the now time-dependent action-angle variables. The terms that are no longer periodic will cause secular changes so that the canonical action-angle variables (J, delta) change in a way that the path of the electron will deform gradually so that it can reach the anode. How the ensemble of the initially randomly distributed electrons forms ...

  1. Textured ZnO thin films by RF magnetron sputtering

    CERN Document Server

    Ginting, M; Kang, K H; Kim, S K; Yoon, K H; Park, I J; Song, J S

    1999-01-01

    Textured thin films ZnO has been successfully grown by rf magnetron sputtering method using a special technique of introducing a small amount of water and methanol on the deposition chamber. The grain size of the textured surface is highly dependent on the argon pressure during the deposition. The pressure in this experiment was varied from 50 mTorr down to 5 mTorr and the highest grain size of the film is obtained at 5 mTorr. The total transmittance of the films are more than 85% in the wavelength of 400 to 800 nm, and haze ratio of about 14% is obtained at 400 nm wavelength. Beside the textured surface, these films also have very low resistivity, which is lower than 1.4x10 sup - sup 3 OMEGA centre dot cm. X-ray analysis shows that the films with textured surface have four diffraction peaks on the direction of (110), (002), (101) and (112), while the non-textured films have only (110) and (002) peaks. Due to the excellent characteristics of this film, it will make the film very good TCO alternatives for the ...

  2. Preparation of iron cobaltite thin films by RF magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Le Trong, H. [Université de Toulouse, UPS, INPT, Institut Carnot CIRIMAT, 118, Route de Narbonne, F-31062 Toulouse cedex 9 (France); CNRS, Institut Carnot Cirimat, F-31062 Toulouse (France); Ho Chi Minh City University of Science, Vietnam National University Ho Chi Minh City, 227 Nguyen Van Cu Q 5, 750000 Ho Chi Minh City (Viet Nam); Bui, T.M.A. [Université de Toulouse, UPS, INPT, Institut Carnot CIRIMAT, 118, Route de Narbonne, F-31062 Toulouse cedex 9 (France); CNRS, Institut Carnot Cirimat, F-31062 Toulouse (France); University of Transport and Communications, Lang Thuong, Dong Da, Hanoi (Viet Nam); Presmanes, L., E-mail: presmane@chimie.ups-tlse.fr [Université de Toulouse, UPS, INPT, Institut Carnot CIRIMAT, 118, Route de Narbonne, F-31062 Toulouse cedex 9 (France); CNRS, Institut Carnot Cirimat, F-31062 Toulouse (France); Barnabé, A.; Pasquet, I.; Bonningue, C.; Tailhades, Ph. [Université de Toulouse, UPS, INPT, Institut Carnot CIRIMAT, 118, Route de Narbonne, F-31062 Toulouse cedex 9 (France); CNRS, Institut Carnot Cirimat, F-31062 Toulouse (France)

    2015-08-31

    Iron cobaltite thin films with spinel structure have been elaborated by radio-frequency (RF) magnetron sputtering from a Co{sub 1.75}Fe{sub 1.25}O{sub 4} target. Influence of argon pressure on structure, microstructure and physical properties of films has been examined. Iron–cobalt oxide thin films essentially consist of one spinel phase when deposited at low pressure (0.5 and 1.0 Pa). At high pressure (2.0 Pa), the global stoichiometry of the film is changed which results in the precipitation of a mixed monoxide of cobalt and iron beside the spinel phase. This in-situ reduction due to an oxygen loss occurring mainly at high deposition pressure has been revealed by X-ray diffraction and Raman spectroscopy. Microstructural evolution of thin film with argon pressure has been shown by microscopic observations (AFM and SEM). The evolution of magnetic and electrical properties, versus argon pressure, has been also studied by SQUID and 4 point probe measurements. - Highlights: • Co{sub 1.75}Fe{sub 1.25}O{sub 4} phase is obtained at room temperature without any annealing. • This phase is a ferrimagnetic semiconductor with a coercive field of 32 kOe at 5 K. • Oxygen content of the thin film is related to the argon pressure during sputtering. • Monoxide phase grows into the film at high argon pressure. • Magnetic coupling effect reveals nanoscale impurities at low argon pressure.

  3. Application of 60 mmphi superconducting bulk magnet to magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Matsuda, T.; Kashimoto, S.; Imai, A.; Yanagi, Y.; Itoh, Y.; Ikuta, H.; Mizutani, U.; Sakurai, K.; Hazama, H

    2003-10-15

    We constructed the planar magnetron sputtering apparatus using a c-axis oriented single-domain Sm123 bulk superconductor with 60 mm in diameter as a very powerful magnet in place of an ordinary Nd-Fe-B magnet. A high magnetic field of 4.2 T at the surface of the superconductor coupled with a high target voltage of maximum 6 kV enabled us to discharge even at pressure of 1 x 10{sup -3} Pa. A target-to-substrate distance of 300 mm was successfully employed under low pressures of 10{sup -2}-10{sup -3} Pa to make the deposition of almost contamination-free films feasible. The simulation software (JMAG) was used to optimize the magnetic circuit configurations. The simulations could reproduce well the distribution of the magnetic field above the target measured by a three-axial Hall sensor. The discharging characteristics of Cu, Ni and Fe targets in the pressure range over 10{sup -1}-10{sup -3} Pa were studied under different target voltages. The deposition rates of 0.063 nm/s (or 38 Angst/min) and 0.013 nm/s (or 8 Angst/min) were achieved for Cu and Fe targets with 3 mm in thickness, respectively, under the Ar pressure of 6.6 x 10{sup -2} Pa (or 4.9 x 10{sup -4} Torr)

  4. Superconducting niobium nitride films deposited by unbalanced magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Olaya, J.J. [Departamento de Ingenieria Mecanica y Mecatronica, Universidad Nacional de Colombia, Ciudad Universitaria, Carrera 30 Numero 45-03, Bogota (Colombia); Huerta, L. [Instituto de Investigaciones en Materiales, Universidad Nacional Autonoma de Mexico, Circuito exterior s/n, CU Coyoacan, Mexico D.F. 04510 (Mexico); Rodil, S.E. [Instituto de Investigaciones en Materiales, Universidad Nacional Autonoma de Mexico, Circuito exterior s/n, CU Coyoacan, Mexico D.F. 04510 (Mexico)], E-mail: ser42@iim.unam.mx; Escamilla, R. [Instituto de Investigaciones en Materiales, Universidad Nacional Autonoma de Mexico, Circuito exterior s/n, CU Coyoacan, Mexico D.F. 04510 (Mexico)

    2008-10-01

    Niobium nitride (NbN) thin films were deposited under different configurations of the magnetic field using a magnetron sputtering system. The magnetic field configuration varied from balanced to unbalanced leading to different growth conditions and film properties. The aim of the paper was to identify correlations between deposition conditions, film properties and the electrical properties, specially the superconductive critical temperature (T{sub C}). The results suggested that there is a critical deposition condition, having an optimum ion-atom arrival ratio that promotes a well ordered and textured nanocrystalline structure (cubic phase) with the minimum residual stress and only under this condition a high critical temperature (16K) was obtained. Lower T{sub C} values around 12K were obtained for the NbN samples having a lower degree of structural perfection and texture, and a larger fraction of intergranular voids. On the other hand, analysis of valence-band spectra showed that the contribution of the Nb 4d states remained essentially constant while the higher T{sub C} was correlated to a higher contribution of the N 2p states.

  5. Comparison of the structural properties and residual stress of AlN films deposited by dc magnetron sputtering and high power impulse magnetron sputtering at different working pressures

    Energy Technology Data Exchange (ETDEWEB)

    Ait Aissa, K.; Achour, A., E-mail: a_aminph@yahoo.fr; Camus, J.; Le Brizoual, L.; Jouan, P.-Y.; Djouadi, M.-A.

    2014-01-01

    Aluminium nitride (AlN) films were deposited by dc magnetron sputtering (dcMS) and high power impulse magnetron sputtering (HiPIMS) on (100) oriented silicon (Si) substrates, in Ar–N{sub 2} gas mixture, at different working pressures. The films were characterized using X-ray diffraction (XRD), profilometer and transmission electron microscopy (TEM). The effect of the sputtering pressure on the structure, the residual stress and the deposition rate of AlN films deposited by the two processes (dcMS and HiPIMS) was investigated. It was found that the deposition rate is always lower in HiPIMS compared to dcMS. The AlN films are textured along (002) direction in both cases of dcMS and HiPIMS as it is indicated by XRD measurements, with residual stresses which are more important in the case of films deposited by HiMIPS. These residual stresses decrease with the sputtering pressure increase, especially in the case of the films deposited by HiPIMS. TEM analyses have shown a local epitaxial growth of AlN on the Si substrate which would favour thermal evacuation improvement of AlN as thermal interface material. - Highlights: • Highly c-axis oriented AlN films were obtained. • dc magnetron sputtering and high power impulse magnetron sputtering (HiMIPS) were used. • Abrupt interface between AlN and silicon substrate was obtained by HiPIMS.

  6. What Is Reactive Arthritis?

    Science.gov (United States)

    ... Arthritis PDF Version Size: 69 KB November 2014 What is Reactive Arthritis? Fast Facts: An Easy-to- ... Information About Reactive Arthritis and Other Related Conditions What Causes Reactive Arthritis? Sometimes, reactive arthritis is set ...

  7. Growth evolution of self-textured ZnO films deposited by magnetron sputtering at low temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Bortoleto, J.R.R., E-mail: jrborto@sorocaba.unesp.br [Technological Plasmas Laboratory, São Paulo State University-UNESP, Av. Três de Março, 511, Sorocaba, SP (Brazil); Chaves, M. [Technological Plasmas Laboratory, São Paulo State University-UNESP, Av. Três de Março, 511, Sorocaba, SP (Brazil); Rosa, A.M. [School of Electrical and Computer Engineering, University of Campinas-UNICAMP, Av. Albert Einstein, Campinas, SP (Brazil); Silva, E.P. da; Durrant, S.F. [Technological Plasmas Laboratory, São Paulo State University-UNESP, Av. Três de Março, 511, Sorocaba, SP (Brazil); Trino, L.D.; Lisboa-Filho, P.N. [Group of Advanced Materials, São Paulo State University-UNESP, Av. Eng. Luiz Edmundo Carrijo Coube, 14-01, Bauru, SP (Brazil)

    2015-04-15

    Highlights: • Zinc oxide thin films were prepared using reactive RF magnetron sputtering. • The surface topography was examined using atomic force microscopy (AFM). • Shadowing and surface diffusion, as well as facet stabilization, are key mechanisms in the production of the final texture at 100 °C. • For the films grown at 250 °C, structural misorientation during growth also plays an important role. - Abstract: In this work, the evolution of the surface morphology of ZnO thin films deposited by reactive RF magnetron sputtering has been investigated using atomic force microscopy (AFM) and X-ray diffraction (XRD). All AFM images of the films were analyzed using scaling concepts. To study the growth evolution, different ZnO films with thicknesses of up to 1270 nm were deposited at temperatures of 100 and 250 °C. For the films grown at 100 °C, AFM data show that the lateral length ξ evolves continuously while the temporal evolution of the root mean square roughness σ presents two distinct regimes. Early during the depositions, the morphology of the ZnO films is mainly characterized by granular structures. Beyond thickness of about 600 nm, pyramid-like structures with {214} crystallographic facets start to develop. For the films grown at 250 °C, however, only one growth regime was observed and for the thicker films, the surface morphology consisted of polygonal structures. For the films grown at 100 °C, the growth exponents, β, and the exponent defining the evolution of the characteristic wavelength of the surface, p, were β{sub 1} = 0.70 ± 0.02 and β{sub 2} = 0.26 ± 0.2; and p = 0.2 ± 0.04. For the films grown at 250 °C, the exponent values were β = 0.78 ± 0.02 and p = 0.32 ± 0.05. These values of the exponents indicate the occurrence of surface mechanisms, such as shadowing and surface diffusion, as well as facet stabilization at 100 °C. For the films grown at 250 °C, however, structural misorientation during growth also plays an important

  8. Influence of plasma-generated negative oxygen ion impingement on magnetron sputtered amorphous SiO{sub 2} thin films during growth at low temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Macias-Montero, M.; Garcia-Garcia, F. J.; Alvarez, R.; Gil-Rostra, J.; Gonzalez, J. C.; Gonzalez-Elipe, A. R.; Palmero, A. [Instituto de Ciencia de Materiales de Sevilla (CSIC-US), Americo Vespucio 49, 41092 Seville (Spain); Cotrino, J. [Instituto de Ciencia de Materiales de Sevilla (CSIC-US), Americo Vespucio 49, 41092 Seville (Spain); Departamento de Fisica Atomica, Molecular y Nuclear, Universidad de Sevilla, Avda. Reina Mercedes, s/n, 42022 Seville (Spain)

    2012-03-01

    Growth of amorphous SiO{sub 2} thin films deposited by reactive magnetron sputtering at low temperatures has been studied under different oxygen partial pressure conditions. Film microstructures varied from coalescent vertical column-like to homogeneous compact microstructures, possessing all similar refractive indexes. A discussion on the process responsible for the different microstructures is carried out focusing on the influence of (i) the surface shadowing mechanism, (ii) the positive ion impingement on the film, and (iii) the negative ion impingement. We conclude that only the trend followed by the latter and, in particular, the impingement of O{sup -} ions with kinetic energies between 20 and 200 eV, agrees with the resulting microstructural changes. Overall, it is also demonstrated that there are two main microstructuring regimes in the growth of amorphous SiO{sub 2} thin films by magnetron sputtering at low temperatures, controlled by the amount of O{sub 2} in the deposition reactor, which stem from the competition between surface shadowing and ion-induced adatom surface mobility.

  9. Highly c-axis oriented ZnO:Ni thin film nanostructure by RF magnetron sputtering: Structural, morphological and magnetic studies

    Energy Technology Data Exchange (ETDEWEB)

    Siddheswaran, R., E-mail: rsiddhes@yahoo.com [New Technologies Research Centre, University of West Bohemia in Pilsen, Plzeň-30614 (Czech Republic); Savková, Jarmila; Medlín, Rostislav; Očenášek, Jan [New Technologies Research Centre, University of West Bohemia in Pilsen, Plzeň-30614 (Czech Republic); Životský, Ondřej [Institute of Physics, VŠB-Technical University of Ostrava, 17. Listopadu 15, 708 33 Ostrava-Poruba (Czech Republic); RMTVC, VŠB-Technical University of Ostrava, 17. Listopadu 15, 708 33 Ostrava-Poruba (Czech Republic); Novák, Petr; Šutta, Pavol [New Technologies Research Centre, University of West Bohemia in Pilsen, Plzeň-30614 (Czech Republic)

    2014-10-15

    Highlights: • Highly preferred oriented columnar ZnO:Ni thin films were prepared by magnetron sputtering. • XRD and azimuthal studies explain the characteristics of orientation in [0 0 1] direction. • Surface morphology and grains distribution were explained by FE-SEM. • XTEM specimen prepared by ion slicing used for TEM microstructure analyses. • Tendency of ferromagnetism by influence of Ni content was studied by VSM. - Abstract: Nickel doped zinc oxide (ZnO:Ni) thin films with different Ni concentrations were deposited on silicon substrates at 400 °C by reactive magnetron sputtering using a mixture of Ar and O{sub 2} gases. The X-ray diffraction and azimuthal patterns of the ZnO:Ni were carried out, and the quality of the strong preferred orientation of crystalline columns in the direction [0 0 1] perpendicular to the substrate surface were analysed. The grain size, distribution, and homogeneity of the thin film surfaces were studied by FE-SEM. The EDX and mapping confirmed that the Ni is incorporated into ZnO uniformly. The microstructure of the textured columns was analysed by TEM and HRTEM analyses. The average thickness and length of the columns were found to be about 50 nm and 600 nm, respectively. The rise of ferromagnetism by the influence of Ni content was studied by VSM magnetic studies at room temperature.

  10. Magnetron sputtered zinc oxide nanorods as thickness-insensitive cathode interlayer for perovskite planar-heterojunction solar cells.

    Science.gov (United States)

    Liang, Lusheng; Huang, Zhifeng; Cai, Longhua; Chen, Weizhong; Wang, Baozeng; Chen, Kaiwu; Bai, Hua; Tian, Qingyong; Fan, Bin

    2014-12-10

    Suitable electrode interfacial layers are essential to the high performance of perovskite planar heterojunction solar cells. In this letter, we report magnetron sputtered zinc oxide (ZnO) film as the cathode interlayer for methylammonium lead iodide (CH3NH3PbI3) perovskite solar cell. Scanning electron microscopy and X-ray diffraction analysis demonstrate that the sputtered ZnO films consist of c-axis aligned nanorods. The solar cells based on this ZnO cathode interlayer showed high short circuit current and power conversion efficiency. Besides, the performance of the device is insensitive to the thickness of ZnO cathode interlayer. Considering the high reliability and maturity of sputtering technique both in lab and industry, we believe that the sputtered ZnO films are promising cathode interlayers for perovskite solar cells, especially in large-scale production.

  11. Characteristics of Nitrogen Doped Diamond-Like Carbon Films Prepared by Unbalanced Magnetron Sputtering for Electronic Devices.

    Science.gov (United States)

    Lee, Jaehyeong; Choi, Byung Hui; Yun, Jung-Hyun; Park, Yong Seob

    2016-05-01

    Synthetic diamond-like carbon (DLC) is a carbon-based material used mainly in cutting tool coatings and as an abrasive material. The market for DLC has expanded into electronics, optics, and acoustics because of its distinct electrical and optical properties. In this work, n-doped DLC (N:DLC) films were deposited on p-type silicon substrates using an unbalanced magnetron sputtering (UBMS) method. We investigated the effect of the working pressure on the microstructure and electrical properties of n-doped DLC films. The structural properties of N:DLC films were investigated by Raman spectroscopy and SEM-EDX, and the electrical properties of films were investigated by observing the changes in the resistivity and current-voltage (I-V) properties. The N:DLC films prepared by UBMS in this study demonstrated good conducting and physical properties with n-doping.

  12. Solar Hydrogen Production by Amorphous Silicon Photocathodes Coated with a Magnetron Sputter Deposited Mo2C Catalyst.

    Science.gov (United States)

    Morales-Guio, Carlos G; Thorwarth, Kerstin; Niesen, Bjoern; Liardet, Laurent; Patscheider, Jörg; Ballif, Christophe; Hu, Xile

    2015-06-10

    Coupling of Earth-abundant hydrogen evolution catalysts to photoabsorbers is crucial for the production of hydrogen fuel using sunlight. In this work, we demonstrate the use of magnetron sputtering to deposit Mo2C as an efficient hydrogen evolution reaction catalyst onto surface-protected amorphous silicon (a-Si) photoabsorbers. The a-Si/Mo2C photocathode evolves hydrogen under simulated solar illumination in strongly acidic and alkaline electrolytes. Onsets of photocurrents are observed at potentials as positive as 0.85 V vs RHE. Under AM 1.5G (1 sun) illumination, the photocathodes reach current densities of -11.2 mA cm(-2) at the reversible hydrogen potential in 0.1 M H2SO4 and 1.0 M KOH. The high photovoltage and low-cost of the Mo2C/a-Si assembly make it a promising photocathode for solar hydrogen production.

  13. Thermochromic VO2 thin films deposited by magnetron sputtering for smart window applications

    Science.gov (United States)

    Fortier, Jean-Philippe

    objectives in mind. To start, we had to find a first recipe to obtain our first samples of the material. Using the literature as a starting point, several samples were deposited by magnetron sputtering while improving certain deposition conditions as well as varying influential deposition parameters. Once the oxide obtained, it was necessary to optimize the parameters not only to render thermochromic coatings with the highest possible quality, but also to determine each parameter's sensitivity. Characterization techniques such as microscopy, spectroscopy, ellipsometry, scanning electron microscopy, atomic force microscopy, Raman spectroscopy, x-ray diffraction and finally, time-of-flight secondary ion mass spectrometry were used to analyze different aspects of our multiple samples. Indeed, to mention only the ix most relevant observations, we were able to confirm that the microstructure, composition, most relevant observations, we were able to confirm that the microstructure, composition, crystallinity and film thickness have a significant impact on the coating's thermochromic behavior as well as on its optical properties. As a result, the oxygen concentration and the thickness had to be optimized and the deposition temperature, maximized. Reactive poisoning of the sputtering target is also a phenomenon that needs to be considered during deposition. Then, our sputtering target and substrate cleaning procedures were improved following certain observations. VO2 was equally found to be sensitive to small temperature gradients in addition of being highly dependent upon high deposition temperatures. Finally, the use of different substrates has subsequently shown that the film composition and microstructure can be altered. After mastering the deposition of thin VO2 films, we explored another path that we found to be quite innovative. A relatively new deposition technique called HiPIMS was put to the test based on its new characteristics, leading to believe that it had the

  14. Effect of thickness on surface morphology, optical and humidity sensing properties of RF magnetron sputtered CCTO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Ahmadipour, Mohsen [Structural Materials Niche Area, School of Materials and Mineral Resources Engineering, Universiti Sains Malaysia, Engineering Campus, 14300 Nibong Tebal, Penang (Malaysia); Ain, Mohd Fadzil [School of Electrical and Electronic Engineering, Universiti Sains Malaysia, Engineering Campus, 14300 Nibong Tebal, Penang (Malaysia); Ahmad, Zainal Arifin, E-mail: srzainal@usm.my [Structural Materials Niche Area, School of Materials and Mineral Resources Engineering, Universiti Sains Malaysia, Engineering Campus, 14300 Nibong Tebal, Penang (Malaysia)

    2016-11-01

    Highlights: • CCTO thin film was synthesized by RF magnetron sputtering successfully. • Increase in thickness lead to increase in grain size and decrease in band gap. • Short response times and recovery times of lead CCTO humidity sensor. • Sensor could detect humidity range (30–90%). - Abstract: In this study, calcium copper titanate (CCTO) thin films were deposited on ITO substrates successfully by radio frequency (RF) magnetron sputtering method in argon atmosphere. The CCTO thin films present a polycrystalline, uniform and porous structure. The surface morphology, optical and humidity sensing properties of the synthesized CCTO thin films have been studied by X-ray diffraction (XRD), atomic force microscopy (AFM), field emission scanning electron microscopy (FESEM), energy-dispersive X-ray spectroscopy (EDX), UV–vis spectrophotometer and current-voltage (I–V) analysis. XRD and AFM confirmed that the intensity of peaks and pore size of CCTO thin films were enhanced by increasing the thin films. Tauc plot method was adopted to estimate the optical band gaps. The surface structure and energy band gaps of the deposited films were affected by film thickness. Energy band gap of the layers were 3.76 eV, 3.68 eV and 3.5 eV for 200 nm, 400 nm, and 600 nm CCTO thin films layer, respectively. The humidity sensing properties were measured by using direct current (DC) analysis method. The response times were 12 s, 22 s, and 35 s while the recovery times were 500 s, 600 s, and 650 s for 200 nm, 400 nm, and 600 nm CCTO thin films, respectively at humidity range of 30–90% relative humidity (RH).

  15. Harmonic and Reactive Currents Detection Method of Unbalanced Three-Phase Voltage System%三相电压不对称系统的谐波和无功电流检测

    Institute of Scientific and Technical Information of China (English)

    杨浩; 叶明佳; 张楠

    2012-01-01

    When three-phase voltages are unbalanced, the circuit structure and mathematical operation of traditional dq harmonic and reactive currents detection method are both comparatively complicated so that the real-time performance and accuracy will be decreased. A novel detection method of unbalanced three—phase voltage system was proposed. The symmetry of fundamental positive-sequence current or fundamental positive - sequence active (reactive) current is comparatively better and its frequency is the same as the voltage' s,so it is used as the input of PLL rather than the voltage to get the sine and cosine signal that dq transformation needs, thus avoiding the problems that unbalanced three-phase voltages cause. This method was built into model and simulated by MATLAB/SIMULINK. Simulation results prove that this improved method raises the detection accuracy and real—time performance, and it has good dynamic response speed, as well as tracking characteristic, and can be implemented simply and applied flexibly.%三相电网电压不对称时存在相位差,会影响电网运行的安全.为了对谐波的实时性及精度进行检测.提出一种改进的dq坐标变换的谐波和无功电流检测法:即用得到的对称性较好且频率与电网电压相同的基波正序电流或基波正序有功(无功)电流代替电网电压进行锁相得到dq变换所需的正余弦信号,避免了三相电压不对称带来的检测精度和实时性问题.利用MATLAB/SIMULINK仿真软件进行建模仿真,仿真结果表明,提出的方法提高了检测的精度和实时性,同时具有良好的动态响应速度及跟踪性能且实现简单、运用灵活.

  16. Protection effect of ZrO2 coating layer on LiCoO2 thin film fabricated by DC magnetron sputtering.

    Science.gov (United States)

    Noh, Jung-Pil; Jung, Ki-Taek; Jang, Min-Sun; Kwon, Tae-Hoon; Cho, Gyu-Bong; Kim, Ki-Won; Nam, Tae-Hyun

    2013-10-01

    Bare and ZrO2-coated LiCoO2 thin films were fabricated by direct current magnetron sputtering method on STS304 substrates. Deposited both films have a well-crystallized structure with (003) preferred orientation after annealing at 600 degrees C. The ZrO2-coated LiCoO2 thin film provide significantly improved cycling stability compared to bare LiCoO2 thin film at high cut-off potential (3.0-4.5 V). The improvement in electrochemical stability is attributed to the structural stability by ZrO2 coating layer.

  17. Particle beam experiments for the analysis of reactive sputtering processes in metals and polymer surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Corbella, Carles; Grosse-Kreul, Simon; Kreiter, Oliver; Arcos, Teresa de los; Benedikt, Jan; Keudell, Achim von [RD Plasmas with Complex Interactions, Ruhr-Universität Bochum, Universitätsstr. 150, 44780 Bochum (Germany)

    2013-10-15

    A beam experiment is presented to study heterogeneous reactions relevant to plasma-surface interactions in reactive sputtering applications. Atom and ion sources are focused onto the sample to expose it to quantified beams of oxygen, nitrogen, hydrogen, noble gas ions, and metal vapor. The heterogeneous surface processes are monitored in situ by means of a quartz crystal microbalance and Fourier transform infrared spectroscopy. Two examples illustrate the capabilities of the particle beam setup: oxidation and nitriding of aluminum as a model of target poisoning during reactive magnetron sputtering, and plasma pre-treatment of polymers (PET, PP)

  18. Particle beam experiments for the analysis of reactive sputtering processes in metals and polymer surfaces.

    Science.gov (United States)

    Corbella, Carles; Grosse-Kreul, Simon; Kreiter, Oliver; de los Arcos, Teresa; Benedikt, Jan; von Keudell, Achim

    2013-10-01

    A beam experiment is presented to study heterogeneous reactions relevant to plasma-surface interactions in reactive sputtering applications. Atom and ion sources are focused onto the sample to expose it to quantified beams of oxygen, nitrogen, hydrogen, noble gas ions, and metal vapor. The heterogeneous surface processes are monitored in situ by means of a quartz crystal microbalance and Fourier transform infrared spectroscopy. Two examples illustrate the capabilities of the particle beam setup: oxidation and nitriding of aluminum as a model of target poisoning during reactive magnetron sputtering, and plasma pre-treatment of polymers (PET, PP).

  19. Preparation of Metal-Containing Diamond-Like Carbon Films by Magnetron Sputtering and Plasma Source Ion Implantation and Their Properties

    Directory of Open Access Journals (Sweden)

    Stefan Flege

    2017-01-01

    Full Text Available Metal-containing diamond-like carbon (Me-DLC films were prepared by a combination of plasma source ion implantation (PSII and reactive magnetron sputtering. Two metals were used that differ in their tendency to form carbide and possess a different sputter yield, that is, Cu with a relatively high sputter yield and Ti with a comparatively low one. The DLC film preparation was based on the hydrocarbon gas ethylene (C2H4. The preparation technique is described and the parameters influencing the metal content within the film are discussed. Film properties that are changed by the metal addition, such as structure, electrical resistivity, and friction coefficient, were evaluated and compared with those of pure DLC films as well as with literature values for Me-DLC films prepared with a different hydrocarbon gas or containing other metals.

  20. Substrate Heating Effect on c-Axis Texture and Piezoelectric Properties of AlN Thin Films Deposited by Unbalanced Magnetron Sputtering

    Science.gov (United States)

    Hasheminiasari, Masood; Lin, Jianliang

    2016-06-01

    Aluminum nitride (AlN) thin films with highly preferred (002) orientations have been reactively deposited by a pulsed-closed field unbalanced magnetron sputtering system using TiN/Ti as the seed/adhesion layer with various substrate temperatures. The texture, orientation and piezoelectric properties of AlN films were characterized by means of x-ray diffraction, rocking curves and laser interferometry. A Michelson laser interferometer was designed and built to obtain the converse piezoelectric response of the deposited AlN thin films. It was found that a slight substrate temperature increase would significantly affect the (002) orientation and the piezoelectric coefficient of AlN thin films compared to the coating obtained with no intentional substrate heating, while higher temperature applications on substrate deteriorated the c-axis texture of the coatings without significant improvement in the piezoelectric response of AlN films.

  1. IBA analysis and corrosion resistance of TiAlPtN/TiAlN/TiAl multilayer films deposited over a CoCrMo using magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Canto, C.E., E-mail: carloscanto2012@yahoo.com.mx [Instituto de Física, Universidad Nacional Autónoma de México, Apartado Postal 20-364, 01000 México D.F. (Mexico); Andrade, E.; Lucio, O. de; Cruz, J.; Solís, C. [Instituto de Física, Universidad Nacional Autónoma de México, Apartado Postal 20-364, 01000 México D.F. (Mexico); Rocha, M.F. [ESIME-Z, IPN, U.P. ALM, Gustavo A. Madero, C.P. 07738 México D.F. (Mexico); Alemón, B. [Departamento de Ingeniería de Proyectos, CUCEI, Universidad de Guadalajara, J. Guadalupe Zuno 48, Los Belenes, Zapopan, Jalisco 45101 (Mexico); Tecnológico de Monterrey, Av. General Ramón Corona 2514, Col. Nuevo México, Zapopan, Jalisco 45201 (Mexico); Flores, M. [Departamento de Ingeniería de Proyectos, CUCEI, Universidad de Guadalajara, J. Guadalupe Zuno 48, Los Belenes, Zapopan, Jalisco 45101 (Mexico); Huegel, J.C. [Tecnológico de Monterrey, Av. General Ramón Corona 2514, Col. Nuevo México, Zapopan, Jalisco 45201 (Mexico)

    2016-03-15

    The corrosion resistance and the elemental profile of multilayer coatings of TiAlPtN/TiAlN/TiAl synthesized by Physical Vapor Deposition (PVD) reactive magnetron sputtering over a CoCrMo alloy substrate in 10 periods of 30 min each were analyzed and compared to those of the substrate alone and to that of a TiAlPtN single layer coating of the same thickness. The objective of the present work was to create multilayers with different amounts of Pt to enhance the corrosion resistance of a biomedical alloy of CoCrMo. Corrosion tests were performed using Simulated Body Fluid (SBF) using potentiodynamic polarization tests at typical body temperature. The elemental composition and thickness of the coatings were evaluated with the combination of two ion beam analysis (IBA) techniques: a Rutherford Backscattering Spectroscopy (RBS) with alpha beam and a Nuclear Reaction Analysis with a deuteron beam.

  2. Surface modification of tantalum pentoxide coatings deposited by magnetron sputtering and correlation with cell adhesion and proliferation in in vitro tests

    Science.gov (United States)

    Zykova, A.; Safonov, V.; Goltsev, A.; Dubrava, T.; Rossokha, I.; Donkov, N.; Yakovin, S.; Kolesnikov, D.; Goncharov, I.; Georgieva, V.

    2016-03-01

    The effect was analyzed of surface treatment by argon ions on the surface properties of tantalum pentoxide coatings deposited by reactive magnetron sputtering. The structural parameters of the as-deposited coatings were investigated by means of transmission electron microscopy, atomic force microscopy and scanning electron microscopy. X-ray diffraction profiles and X-ray photoelectron spectra were also acquired. The total surface free energy (SFE), the polar, dispersion parts and fractional polarities, were estimated by the Owens-Wendt-Rabel-Kaeble method. The adhesive and proliferative potentials of bone marrow cells were evaluated for both Ta2O5 coatings and Ta2O5 coatings deposited by simultaneous bombardment by argon ions in in vitro tests.

  3. Theoretical investigation of resonant frequencies of unstrapped magnetron with arbitrary side resonators

    Energy Technology Data Exchange (ETDEWEB)

    Yue, Song, E-mail: yuessd@163.com [Key Laboratory of High Power Microwave Sources and Technologies, Institute of Electronics, Chinese Academy of Sciences, Beijing 100190 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Zhang, Zhao-chuan; Gao, Dong-ping [Key Laboratory of High Power Microwave Sources and Technologies, Institute of Electronics, Chinese Academy of Sciences, Beijing 100190 (China)

    2015-04-15

    In this paper, a sector steps approximation method is proposed to investigate the resonant frequencies of magnetrons with arbitrary side resonators. The arbitrary side resonator is substituted with a series of sector steps, in which the spatial harmonics of electromagnetic field are also considered. By using the method of admittance matching between adjacent steps, as well as field continuity conditions between side resonators and interaction regions, the dispersion equation of magnetron with arbitrary side resonators is derived. Resonant frequencies of magnetrons with five common kinds of side resonators are calculated with sector steps approximation method and computer simulation softwares, in which the results have a good agreement. The relative error is less than 2%, which verifies the validity of sector steps approximation method.

  4. Magnetron sputtering of copper on thermosensitive polymer materials of the gas centrifuge rotors

    Science.gov (United States)

    Borisevich, V.; Senchenkov, S.; Titov, D.

    2016-09-01

    Magnetron sputtering is the well-known and widely-used deposition technique for coating versatile high-quality and well-adhered films. However, the technology has some limitations, caused by high temperatures on the coating surface. The paper is devoted to the experimental development of a process of magnetron sputtering of copper on a surface coated with a thermosensitive polymer made of carbon fiber with epoxide binder. This process is applied for balancing a rotor of a gas centrifuge for isotope separation. The optimum operating parameters of the process are found and discussed. They were in quantitative agreement with data obtained by means of non-stationary modeling based on a global description of plasma in the typical geometry of the magnetron discharges obtained in independent research. The structure of the resulting layer is investigated.

  5. Microwave impedance matching strategies of an applicator supplied by a bi-directional magnetron waveguide launcher.

    Science.gov (United States)

    Roussy, Georges; Kongmark, Nils

    2003-01-01

    It is shown that a bi-directional waveguide launcher can be used advantageously for reducing the reflection coefficient mismatch of an input impedance of an applicator. In a simple bi-directional waveguide launcher, the magnetron is placed in the waveguide and generates a nominal field distribution with significant output impedance in both directions of the waveguide. If a standing wave is tolerated in the torus, which connects the launcher and the applicator, the power transfer from the magnetron to the applicator can be optimal, without using special matching devices. It is also possible to match the bi-directional launcher with two inductance stubs near the antenna of the magnetron and use them for supplying a two-input applicator without reflection.

  6. Enhancement of bioactivity of pulsed magnetron sputtered TiC{sub x}N{sub y} with bioactive glass (BAG) incorporated polycaprolactone (PCL) composite scaffold

    Energy Technology Data Exchange (ETDEWEB)

    Anusha Thampi, V.V.; Subramanian, B., E-mail: subramanianb3@gmail.com

    2015-11-15

    Titanium carbonitride (TiC{sub x}N{sub y}) thin films were fabricated on SS 316 L by pulsed reactive DC magnetron sputtering using titanium and graphite targets. The sputtered film was characterized microstructurally by X-ray diffraction (XRD) and Scanning electron microscopy (SEM). The XRD pattern revealed that the film was preferentially oriented along (200) axis with a grain size of 20 nm. A globular morphology was observed from electron micrograph while Energy dispersive X-ray spectroscopy (EDS) showed the compositional purity of the film. To improve the bioactivity, bioactive glass (BAG) nanopowders of size 60 nm, synthesized by sol–gel method, was incorporated into a polycaprolactone (PCL) scaffold (BAG-PCL), which was applied over TiC{sub x}N{sub y}/SS (BAG-PCL/TiCN/SS). In-vitro bioactivity studies of BAG-PCL showed the apatite formation, which was confirmed from fourier transform infrared (FTIR) spectrum and SEM. In-vitro corrosion studies in simulated body fluid (SBF) solution showed that the coated specimen had a higher charge transfer resistance than stainless steel (SS) bare. The enhancement of bioactivity was monitored by hemocompatibility and cytocompatibility, where an improved cell attachment and lower thrombus formation was observed for the coatings with BAG-PCL. - Highlights: • Fabrication of TiC{sub x}N{sub y} thin films on SS 316 L (TiCN/SS) by reactive pulsed DC magnetron sputtering. • Synthesis of BAG nanopowders (45S5) by sol–gel method. • Incorporation of BAG nanopowders into PCL matrix to form polymer composite scaffold. • BAG-PCL scaffold was coated on TiCN/SS to enhance the bioactivity.

  7. Electron-Induced Secondary Electron Emission Properties of MgO/Au Composite Thin Film Prepared by Magnetron Sputtering

    Science.gov (United States)

    Li, Jie; Hu, Wenbo; Wei, Qiang; Wu, Shengli; Hua, Xing; Zhang, Jintao

    2016-12-01

    As a type of electron-induced secondary electron emitter, MgO/Au composite thin film was prepared by reactive magnetron sputtering of individual Mg target and Au target, and the effects of key process parameters on its surface morphology and secondary electron emission (SEE) properties were investigated. It is found that to deposit a NiO buffer layer on the substrate is conducive to the subsequent growth of MgO grains owing to the lattice matching. The gold addition can raise the electrical conductivity of MgO film and further suppress the surface charging. However, the gold deposition would interfere with the MgO crystallization and increase the surface roughness of MgO/Au film. Therefore, MgO/Au composite thin film with a NiO buffer layer and proper deposition times of MgO and Au can achieve superior SEE properties due to good MgO crystallization, low surface roughness and reasonable electrical conductivity. The optimized MgO/Au composite thin film has a higher SEE coefficient and a lower 1-h SEE degradation rate under electron beam bombardment in comparison with MgO film.

  8. Preparation and Properties of Ag-Containing Diamond-Like Carbon Films by Magnetron Plasma Source Ion Implantation

    Directory of Open Access Journals (Sweden)

    K. Baba

    2012-01-01

    Full Text Available The doping effect of silver on the structure and properties of diamond-like carbon (DLC films was investigated. The samples were prepared by a process combining acetylene plasma source ion implantation (high-voltage pulses of −10 kV with reactive magnetron sputtering of an Ag disc. A mixture of two gases, argon, and acetylene was introduced into the discharge chamber as working gas for plasma formation. A negative high-voltage pulse was applied to the substrate holder, thus, accelerating ions towards the substrate. The chemical composition of the deposited films was modified by the respective gas flows and determined using X-ray photoelectron spectroscopy and secondary ion mass spectrometry. The silver concentration within the DLC films influenced the structure and the tribological properties. The surface roughness, as observed by scanning electron microscopy, increased with silver concentration. The film structure was characterized by Raman spectroscopy and X-ray diffractometry (XRD. The DLC films were mainly amorphous, containing crystalline silver, with the amount of silver depending on the process conditions. The tribological properties of the films were improved by the silver doping. The lowest friction coefficient of around 0.06 was derived at a low silver content.

  9. Characterisation Studies of the Structure and Properties of As-Deposited and Annealed Pulsed Magnetron Sputtered Titania Coatings

    Directory of Open Access Journals (Sweden)

    John A. Ridealgh

    2013-09-01

    Full Text Available Titanium dioxide thin films are durable, chemically stable, have a high refractive index and good electro/photochemical proprieties. Consequently, they are widely used as anti-reflective layers in optical devices and large area glazing products, dielectric layers in microelectronic devices and photo catalytic layers in self-cleaning surfaces. Titania coatings may have amorphous or crystalline structures, where three crystalline phases of TiO2 can be obtained: anatase, rutile and brookite, although the latter is rarely found. It is known, however, that the structure of TiO2 coatings is sensitive to deposition conditions and can also be modified by post-deposition heat treatments. In this study, titania coatings have been deposited onto soda-lime glass substrates by reactive sputtering from a metallic target. The magnetron was driven in mid-frequency pulsed DC mode. The as-deposited coatings were analysed by micro Raman spectroscopy, X-ray diffraction (XRD, atomic force microscopy (AFM and scanning electron microscopy (SEM. Selected coatings were annealed at temperatures in the range 200–700 °C and re-analysed. Whilst there was weak evidence of a nanocrystallinity in the as-deposited films, it was observed that these largely amorphous low temperature structures converted into strongly crystalline structures at annealing temperatures above 400 °C.

  10. Mechanisms of antibacterial activity and stability of silver nanoparticles grown on magnetron sputtered TiO2 coatings

    Indian Academy of Sciences (India)

    K Zawadzka; A Kisielewska; I Piwoński; K Kądzioła; A Felczak; S Różalska; N Wrońska; K Lisowska

    2016-02-01

    Nanomaterials with high stability and efficient antibacterial activity are of considerable interest. The preparation of silver nanoparticles (AgNPs) on titania coatings and their effective antibacterial activity against Staphylococcus aureus ATCC 6538 were reported. Titanium dioxide (TiO2) coatings with AgNPs were prepared on Si wafers using the reactive magnetron sputtering method. The surface topography of AgNPs/TiO2 coatings imaged using scanning electron microscopy revealed that the size and surface density of AgNPs grown by the photoreduction of silver ions were dependent on the concentration of AgNO3 in the primary solution and the time of TiO2 exposure to UV illumination. Evaluation of the antimicrobial properties and surface analysis before and after the biological test of AgNPs/TiO2 coatings indicates their high antimicrobial stability and durability. Furthermore, the interdependence between the concentration of released silver and bacterial growth inhibition was demonstrated. In addition, direct contact killing and released silver-mediated killing have been proposed as a bactericidal mechanism of action of tested coatings with AgNPs.

  11. Surface modification of 316L stainless steel with magnetron sputtered TiN/VN nanoscale multilayers for bio implant applications.

    Science.gov (United States)

    Subramanian, B; Ananthakumar, R; Kobayashi, Akira; Jayachandran, M

    2012-02-01

    Nanoscale multilayered TiN/VN coatings were developed by reactive dc magnetron sputtering on 316L stainless steel substrates. The coatings showed a polycrystalline cubic structure with (111) preferential growth. XPS analysis indicated the presence of peaks corresponding to Ti2p, V2p, N1s, O1s, and C1s. Raman spectra exhibited the characteristic peaks in the acoustic range of 160-320 cm(-1) and in the optic range between 480 and 695 cm(-1). Columnar structure of the coatings was observed from TEM analysis. The number of adherent platelets on the surface of the TiN/VN multilayer, VN, TiN single layer coating exhibit fewer aggregation and pseudopodium than on substrates. The wear resistance of the multilayer coatings increases obviously as a result of their high hardness. Tafel plots in simulated bodily fluid showed lower corrosion rate for the TiN/VN nanoscale multilayer coatings compared to single layer and bare 316L SS substrate.

  12. Enhanced photocatalytic activity of silver nanoparticles modified TiO{sub 2} thin films prepared by RF magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Meng Fanming, E-mail: mrmeng@ahu.edu.cn [School of Physics and Materials Science, Anhui University, Hefei 230039 (China); State Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Dalian University of Technology, Dalian 116024 (China); Anhui Key Laboratory of Information Materials and Devices, Anhui University, Hefei 230039 (China); Sun Zhaoqi [School of Physics and Materials Science, Anhui University, Hefei 230039 (China); Anhui Key Laboratory of Information Materials and Devices, Anhui University, Hefei 230039 (China)

    2009-12-15

    Ag-TiO{sub 2} nanostructured thin films with silver volume fraction of 0-40% were prepared by RF magnetron sputtering. The microstructure, surface topography, and optical properties of the films were characterized by X-ray diffractometer, transmission electron microscope, and ultraviolet-visible spectrophotometer. Photocatalytic activity of the films was evaluated by light-induced degradation of methyl orange (C{sub 14}H{sub 14}N{sub 3}NaO{sub 3}S) solution using a high pressure mercury lamp as lamp-house. The relation of photocatalytic activity and silver content was studied in detail. It is found that silver content influences microstructure of TiO{sub 2} thin films, and silver in the films is metallic Ag (Ag{sup 0}). Photocatalytic activity of the films increases with increasing silver content up to 5 vol.% Ag and then decreases to values significantly still bigger than that of pure TiO{sub 2} thin films. Silver nanoparticles significantly enhance the photocatalytic activity of TiO{sub 2} films. The better separation between electrons and holes on silver modified TiO{sub 2} thin films surface allowed more efficiency for the oxidation and reduction reactions. The enhanced photocatalytic activity was mainly attributed to the decrease of energy gap of the films and the increase of oxygen anion radicals O{sub 2}{sup -} and reactive center of surface Ti{sup 3+} on silver modified TiO{sub 2} thin films surface.

  13. Metal-insulator transition of valence-controlled VO2 thin film prepared by RF magnetron sputtering using oxygen radical

    Science.gov (United States)

    Suetsugu, Takaaki; Shimazu, Yuichi; Tsuchiya, Takashi; Kobayashi, Masaki; Minohara, Makoto; Sakai, Enju; Horiba, Koji; Kumigashira, Hiroshi; Higuchi, Tohru

    2016-06-01

    We have prepared b-axis-oriented VO2 thin films by RF magnetron sputtering using oxygen radicals as the reactive gas. The VO2 thin films consist of a mixed-valence V3+/V4+ state formed by oxygen vacancies. The V3+ ratio strongly depends on the film thickness and the oxygen partial pressure of the radical gun during deposition. The lattice constant of the b-axis increases and the metal-insulator transition (MIT) temperature decreases with decreasing V3+ ratio, although the VO2 thin films with a high V3+ ratio of 42% do not exhibit MIT. The bandwidths and spectral weights of V 3d a1g and \\text{e}\\text{g}σ bands at around the Fermi level, which correspond to the insulating phase at 300 K, are smaller in the VO2 thin films with a low V3+ ratio. These results indicate that the control of the mixed-valence V3+/V4+ state is important for the MIT of b-axis-oriented VO2 thin films.

  14. Epitaxial growth of ZnO thin films on AlN substrates deposited at low temperature by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Rahmane, S.; Soussou, A.; Gautron, E.; Jouan, P.Y.; Le Brizoual, L.; Barreau, N.; Djouadi, M.A. [Institut des Materiaux Jean Rouxel -IMN-, UMR CNRS 6502, Nantes (France); Abdallah, B. [Institut des Materiaux Jean Rouxel -IMN-, UMR CNRS 6502, Nantes (France); Atomic Energy Commission Syrian (AECS), Damascus (Syria); Soltani, A. [IEMN, UMR CNRS 8520, USTL, Villeneuve d' Ascq (France)

    2010-07-15

    Hexagonal aluminium nitride (AlN) and zinc oxide (ZnO) thin films have been deposited by DC and RF reactive magnetron sputtering at room temperature. For a first set of samples, sputtered AlN films were deposited on silicon ZnO substrate. For a second set, ZnO films were deposited on AlN substrate. X-ray diffraction (XRD) and high resolution transmission electron microscopy (HRTEM) analysis of the synthesized AlN film on ZnO buffer layer have shown some amorphous zones close to the interface followed by a nanocrystalline layer exhibiting (10-10) and (0002) orientations of the hexagonal AlN crystalline phase. At the top of the film, a relatively well-crystallized layer with a single (0002) orientation has been observed. We have related the relatively bad interface to the presence of oxygen coming from ZnO substrate. This behaviour was different for the growth of ZnO film when AlN was used as substrate. In fact, we have observed thanks to HRTEM images and selected area electron diffraction patterns, that the ZnO film deposited on AlN substrate exhibits an epitaxial growth which is strongly dependent on the crystalline quality of AlN film. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  15. The structure, surface topography and mechanical properties of Si-C-N films fabricated by RF and DC magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Shi Zhifeng, E-mail: scut0533@126.com [School of Materials Science and Engineering, South China University of Technology, Guangzhou 510641 (China); Wang Yingjun, E-mail: imwangyj@163.com [School of Materials Science and Engineering, South China University of Technology, Guangzhou 510641 (China); Du Chang [School of Materials Science and Engineering, South China University of Technology, Guangzhou 510641 (China); Huang Nan [Key Lab. for Advanced Technologies of Materials, Ministry of Education, Southwest Jiaotong University, 610031 Chengdu (China); Wang Lin; Ning Chengyun [School of Materials Science and Engineering, South China University of Technology, Guangzhou 510641 (China)

    2011-12-01

    Silicon carbon nitride thin films were deposited on Co-Cr alloy under varying deposition conditions such as sputtering power and the partial pressure ratio of N{sub 2} to Ar by radio frequency and direct current magnetron sputtering techniques. The chemical bonding configurations, surface topography and hardness were characterized by means of X-ray photoelectron spectroscopy, atomic force microscopy and nano-indentation technique. The sputtering power exhibited important influence on the film composition, chemical bonding configurations and surface topography, the electro-negativity had primary effects on chemical bonding configurations at low sputtering power. A progressive densification of the film microstructure occurring with the carbon fraction was increased. The films prepared by RF magnetron sputtering, the relative content of the Si-N bond in the films increased with the sputtering power increased, and Si-C and Si-Si were easily detachable, and C-O, N-N and N-O on the film volatile by ion bombardment which takes place very frequently during the film formation process. With the increase of sputtering power, the films became smoother and with finer particle growth. The hardness varied between 6 GPa and 11.23 GPa depending on the partial pressure ratio of N{sub 2} to Ar. The tribological characterization of Co-Cr alloy with Si-C-N coating sliding against UHMWPE counter-surface in fetal bovine serum, shows that the wear resistance of the Si-C-N coated Co-Cr alloy/UHMWPE sliding pair show much favourable improvement over that of uncoated Co-Cr alloy/UHMWPE sliding pair. This study is important for the development of advanced coatings with tailored mechanical and tribological properties.

  16. Dynamic Monte Carlo simulation for reactive sputtering of aluminium

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Z.Y. E-mail: chen@uia.ua.ac.be; Bogaerts, A.; Depla, D.; Ignatova, V

    2003-08-01

    We have applied TRIDYN to simulate the transition from the metallic sputtering to the reactive sputtering mode during magnetron sputtering for an Al target when oxygen is added to argon plasma. Changes in the thickness and composition of multicomponent targets are investigated. The results basically confirm the reactive ion implantation mechanism together with chemical reaction in the subsurface. When oxygen mole fraction x<0.14, the target surface never becomes fully oxidized, even for very long sputtering times. When x>0.14 the target surface can be more or less fully oxidized. Furthermore, an abrupt change in the surface erosion rate at x=0.03 is observed. This corresponds to the avalanche phenomenon indicating the sputtering mode transition.

  17. Preparation and comparison of a-C:H coatings using reactive sputter techniques

    Energy Technology Data Exchange (ETDEWEB)

    Keunecke, M., E-mail: martin.keunecke@ist.fraunhofer.d [Fraunhofer Institute for Surface Engineering and Thin Films (IST), Braunschweig (Germany); Weigel, K.; Bewilogua, K. [Fraunhofer Institute for Surface Engineering and Thin Films (IST), Braunschweig (Germany); Cremer, R.; Fuss, H.-G. [CemeCon AG, Wuerselen (Germany)

    2009-12-31

    Amorphous hydrogenated carbon (a-C:H) coatings are widely used in several industrial applications. These coatings commonly will be prepared by plasma activated chemical vapor deposition (PACVD). The main method used to prepare a-C:H coating in industrial scale is based on a glow discharge in a hydrocarbon gas like acetylene or methane using a substrate electrode powered with medium frequency (m.f. - some 10 to 300 kHz). Some aims of further development are adhesion improvement, increase of hardness and high coating quality on complex geometries. A relatively new and promising technique to fulfil these requirements is the deposition of a-C:H coatings by a reactive d.c. magnetron sputter deposition from a graphite target with acetylene as reactive gas. An advancement of this technique is the deposition in a pulsed magnetron sputter process. Using these three mentioned techniques a-C:H coatings were prepared in the same deposition machine. For adhesion improvement different interlayer systems were applied. The effect of different substrate bias voltages (d.c. and d.c. pulse) was investigated. By applying the magnetron sputter technique in the d.c. pulse mode, plastic hardness values up to 40 GPa could be reached. Besides hardness other mechanical properties like resistance against abrasive wear were measured and compared. Cross sectional SEM images showed the growth structure of the coatings.

  18. Hydroxyapatite thin films synthesized by pulsed laser deposition and magnetron sputtering on PMMA substrates for medical applications

    Energy Technology Data Exchange (ETDEWEB)

    Socol, G. [National Institute for Lasers, Plasma, and Radiation Physics, Atomistilor Street 409, RO-77125 Magurele, Ilfov (Romania); Macovei, A.M. [Institute of Biochemistry, Romanian Academy, Splaiul Independentei 296, 060031 Bucharest (Romania); Miroiu, F.; Stefan, N.; Duta, L.; Dorcioman, G. [National Institute for Lasers, Plasma, and Radiation Physics, Atomistilor Street 409, RO-77125 Magurele, Ilfov (Romania); Mihailescu, I.N., E-mail: ion.mihailescu@inflpr.ro [National Institute for Lasers, Plasma, and Radiation Physics, Atomistilor Street 409, RO-77125 Magurele, Ilfov (Romania); Petrescu, S.M. [Institute of Biochemistry, Romanian Academy, Splaiul Independentei 296, 060031 Bucharest (Romania); Stan, G.E.; Marcov, D.A. [National Institute of Materials Physics, 105 bis Atomistilor Street, RO-77125 Bucharest-Magurele (Romania); Chiriac, A.; Poeata, I. [' Prof. Dr. N. Oblu' , Emergency Clinical Hospital, Neurosurgery Department, Ateneului Street, 3, 700309 Iasi (Romania)

    2010-05-25

    Functionalized implants represent an advanced approaching in implantology, aiming to improve the biointegration and the long-term success of surgical procedures. We report on the synthesis of hydroxyapatite (HA) thin films on polymethylmetacrylate (PMMA) substrates - used as cranio-spinal implant-type structures - by two alternative methods: pulsed laser deposition (PLD) and radio-frequency magnetron sputtering (MS). The deposition parameters were optimized in order to avoid the substrate overheating. Stoichiometric HA structures were obtained by PLD with incident laser fluences of 1.4-2.75 J/cm{sup 2}, pressures of 30-46.66 Pa and 10 Hz pulses repetition rate. The MS depositions were performed at constant pressure of 0.3 Pa in inert and reactive atmospheres. SEM-EDS, XRD, FTIR and pull-out measurements were performed assessing the apatitic-type structure of the prepared films along with their satisfactory mechanical adhesion. Cell viability, proliferation and adhesion tests in osteosarcoma SaOs2 cell cultures were performed to validate the bioactive behaviour of the structures and to select the most favourable deposition regimes. For PLD, this requires a low fluence of 1.4 J/cm{sup 2}, reduced pressure of water vapours and a 100 {sup o}C/4 h thermal treatment. For MS, the best results were obtained for 80% Ar + 20% O{sub 2} reactive atmosphere at low RF power ({approx}75 W). Cells grown on these coatings exhibit behaviour similar to those grown on the standard borosilicate glass control: increased viability, good proliferation, and optimal cell adhesion. In vitro tests proved that HA/PMMA neurosurgical structures prepared by PLD and MS are compatible for the interaction with human bone cells.

  19. Determinação eletroanalítica de corante reativo presente como contaminante em proteínas purificadas por cromatografia de afinidade Electroanalytical determination of a reactive dye currently used in affinity chromatography for protein purificaton

    Directory of Open Access Journals (Sweden)

    Marly E. Osugi

    2004-06-01

    Full Text Available Procion Green HE-4BD is a reactive dye currently used in affinity purification, and commonly present as a contaminant in the final biological preparation. An assay method is described to determine trace amounts of the dye in the presence of human serum albumin(HSA and leakage from agarose as affinity sorbent by cathodic stripping voltammetry. The proposed method is based on the reductive peak at -0.55V in B-R buffer pH 3 (E=0V and t= 240s, obtained when samples of HSA 2% (m/v containing dye concentrations in sodium hydroxide pH 12 are submitted to a heating time of 330 min at 80 ºC. Linear calibration curves can be obtained for RG19 dye concentrations from 5x10-9 mol L-1 to 8 x10-8 mol L-1. The detection limit (3sigma is 1x10-9 mol L-1.

  20. Oxidation of magnetron sputtered La-Si thin films for solide oxide fuel cell electronlytes

    Energy Technology Data Exchange (ETDEWEB)

    Oliveira, J.C. [SEG-CEMUC, Mechanical Department, University of Coimbra, Rua Luis Reis Santos, 3030-788 Coimbra (Portugal)], E-mail: joao.oliveira@dem.uc.pt; Horwat, D. [Laboratoire de Science et Genie des Surfaces (UMR 7570), Ecole des Mines, Parc de Saurupt - F 54042 Nancy Cedex (France)], E-mail: david.horwat@mines.inpl-nancy.fr; Billard, A. [Laboratoire d' Etudes et de Recherches sur les Materiaux, les Procedes et les Surfaces, UTBM, Universite de Technologie de Belfort-Montbeliard, 90010 Belfort (France)], E-mail: alain.billard@utbm.fr; Cavaleiro, A. [SEG-CEMUC, Mechanical Department, University of Coimbra, Rua Luis Reis Santos, 3030-788 Coimbra (Portugal)], E-mail: albano.cavaleiro@dem.uc.pt

    2009-01-30

    La-Si thin films were deposited on stainless steel substrates by magnetron sputtering from pure La and Si targets. The Si/(Si + La) atomic ratio in the films was varied from 43.2 to 59.3% by adjusting the discharge current on the La target. The films had a homogeneous chemical composition down to the substrate and sharp interfaces. Annealing the films in air at 1173 K promotes the formation of apatite-structure La{sub 9.33}Si{sub 6}O{sub 26} and the diffusion of different species from the film to the substrate and vice-versa, resulting in broadening the interfaces. X-Ray diffraction showed that all the as-deposited films had an amorphous structure. The formation of the LaSi{sub 2} phase at intermediate temperatures was observed for the films deposited with higher Si contents while the films deposited with lower Si contents remained amorphous up to the start of the apatite structure crystallization process. The lanthanum silicate apatite-like phase (La{sub 9.33}Si{sub 6}O{sub 26}) was obtained only after annealing at 1173 K, excepted for the film with the lower Si content which is already partially crystallized after annealing at 1073 K. Quite pure La{sub 9.33}Si{sub 6}O{sub 26} was obtained only after annealing the film with the highest Si content (Si/(Si + La) = 59.3%) although the theoretical Si/(Si + La) atomic ratio for apatite structure lanthanum silicate is 39%. For the other films, La{sub 2}O{sub 3} was always detected when the lanthanum silicate phase was formed. Both phenomena clearly resulted from the strong diffusion of silicon excess towards the stainless steel substrate.

  1. Chemical and Morphological Characterization of Magnetron Sputtered at Different Bias Voltages Cr-Al-C Coatings

    Directory of Open Access Journals (Sweden)

    Aleksei Obrosov

    2017-02-01

    Full Text Available MAX phases (M = transition metal, A = A-group element, and X = C/N are of special interest because they possess a unique combination of the advantages of both metals and ceramics. Most attention is attracted to the ternary carbide Cr2AlC because of its excellent high-temperature oxidation, as well as hot corrosion resistance. Despite lots of publications, up to now the influence of bias voltage on the chemical bonding structure, surface morphology, and mechanical properties of the film is still not well understood. In the current study, Cr-Al-C films were deposited on silicon wafers (100 and Inconel 718 super alloy by dc magnetron sputtering with different substrate bias voltages and investigated using Scanning Electron Microscopy (SEM, X-ray Photoelectron Spectroscopy (XPS, X-ray Diffraction (XRD, Atomic Force Microscopy (AFM, and nanoindentation. Transmission Electron Microscopy (TEM was used to analyze the correlation between the growth of the films and the coating microstructure. The XPS results confirm the presence of Cr2AlC MAX phase due to a negative shift of 0.6–0.9 eV of the Al2p to pure aluminum carbide peak. The XRD results reveal the presence of Cr2AlC MAX Phase and carbide phases, as well as intermetallic AlCr2. The film thickness decreases from 8.95 to 6.98 µm with increasing bias voltage. The coatings deposited at 90 V exhibit the lowest roughness (33 nm and granular size (76 nm combined with the highest hardness (15.9 GPa. The ratio of Al carbide to carbide-like carbon state changes from 0.12 to 0.22 and correlates with the mechanical properties of the coatings. TEM confirms the columnar structure, with a nanocrystalline substructure, of the films.

  2. Structural properties of Cu2O epitaxial films grown on c-axis single crystal ZnO by magnetron sputtering

    Science.gov (United States)

    Gan, J.; Gorantla, S.; Riise, H. N.; Fjellvâg, Ø. S.; Diplas, S.; Løvvik, O. M.; Svensson, B. G.; Monakhov, E. V.; Gunnæs, A. E.

    2016-04-01

    Epitaxial Cu2O films grown by reactive and ceramic radio frequency magnetron sputtering on single crystalline ZnO (0001) substrates are investigated. The films are grown on both O- and Zn-polar surface of the ZnO substrates. The Cu2O films exhibit a columnar growth manner apart from a ˜5 nm thick CuO interfacial layer. In comparison to the reactively sputtered Cu2O, the ceramic-sputtered films are less strained and appear to contain nanovoids. Irrespective of polarity, the Cu2O grown by reactive sputtering is observed to have (111)Cu2O||(0001)ZnO epitaxial relationship, but in the case of ceramic sputtering the films are found to show additional (110)Cu2O reflections when grown on O-polar surface. The observed CuO interfacial layer can be detrimental for the performance of Cu2O/ZnO heterojunction solar cells reported in the literature.

  3. Modeling target erosion during reactive sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Strijckmans, K., E-mail: Koen.Strijckmans@ugent.be; Depla, D.

    2015-03-15

    Highlights: • The erosion of a target is simulated with the RSD2013 software during reactive magnetron sputtering. • The influence of redeposition on the target state and on the hysteresis is explained. • The racetrack formation along the hysteresis and as function of the redeposition is quantified. • Comparison of the racetrack and the sputter profile shows clear differences. - Abstract: The influence of the reactive sputter conditions on the racetrack and the sputter profile for an Al/O{sub 2} DC reactive sputter system is studied by modeling. The role of redeposition, i.e. the deposition of sputtered material back on the target, is therefore taken into account. The used model RSD2013 is capable of simulating the effect of redeposition on the target condition in a spatial resolved way. Comparison between including and excluding redeposition in the RSD2013 model shows that the in-depth oxidation profile of the target differs. Modeling shows that it is important to distinguish between the formed racetrack, i.e. the erosion depth profile, and the sputter profile. The latter defines the distribution of the sputtered atoms in the vacuum chamber. As the target condition defines the sputter yield, it does determine the racetrack and the sputter profile of the planar circular target. Both the shape of the racetrack and the sputter profile change as function of the redeposition fraction as well as function of the oxygen flow change. Clear asymmetries and narrowing are observed for the racetrack shape. Similar effects are noticed for the sputter profile but to a different extent. Based on this study, the often heard misconception that the racetrack shape defines the distribution of the sputtered atoms during reactive sputtering is proven to be wrong.

  4. Effects of Substrate Bias on the Hardness and Resistivity of Reactively Sputtered TaN and TiN Thin Films

    Science.gov (United States)

    Lu, Junqing; Arshi, Nishat

    2016-06-01

    TaN and TiN films are being widely used as conductive layers in electronic devices or protective coatings on metal surfaces. Among various deposition methods, reactive magnetron sputtering is preferred partly due to its ability to control the energy of the depositing ions by applying different substrate bias voltages. In this study, TaN and TiN films were deposited on Si/SiO2 substrates by using direct current magnetron sputtering technique with 370 W target power at 1.9 mTorr and under different substrate biases. The effects of the substrate bias on both the resistivity and the hardness of the deposited TaN and TiN films were investigated. The phase and composition of the deposited films were investigated by x-ray diffraction, the resistivity was measured by a four-point probe, and the hardness was obtained by nano-indentation. For TaN films, the use of substrate bias not only increased the hardness but also increased the resistivity. Moreover, the formation of the Ta3N5 phase at the -300 V substrate bias significantly increased the TaN film resistivity. For TiN films, the optimum resistivity (minimum) of 19.5 µΩ-cm and the hardness (maximum) of 31.5 GPa were achieved at the -100 V substrate bias. Since the phase changes occurred in both the TaN and the TiN films at higher substrate biases and these phase changes negatively affected the resistivity or hardness property of the films, the substrate bias should not significantly exceed -100 V.