Dynamics of 120 and 20 kV plasma focus devices with respect to density and current distribution, neutron and X-ray emission

International Nuclear Information System (INIS)

Decker, G.; Nahrath, B.; Oppenlaender, T.; Pross, G.; Rueckle, B.; Schmidt, H.; Shakhatre, M.; Trunk, M.

1976-01-01

Our experiments have aimed at two goals: 1) better understanding of the dynamics and neutron production of the focus phase and 2) improved scaling of the neutron yield by operating a high voltage focus. 1) For the first goal, experiments with a 30 kJ/ 16 kV plasma focus of the Mather type (NESSI) were performed. The simultaneously applied diagnostics include interferometry, X-ray photography with channel plates, magnetic probes and neutron emission. In the established chronology we can distinguish 5 phases in the development of the plasma focus: a compression phase is followed by a short (8 ns) very dense phase, where the density peaks at a minimum radius (t = 0 in our chronology). The plasma cylinder expands to a relatively long lasting (30 to 70 ns) quiescent phase before instabilities occur. This short unstable phase is followed by a decay phase during which the neutron emission peaks. Important correlations between the plasma parameters and the neutron emission are discussed. 2) Under the assumption that the neutron yield scales with a high power of the current, we concluded that a high voltage focus could result in higher neutron yield as compared with a lower voltage device of the same energy. The proper adjustments of the discharge parameters necessary due to the very short current risetime have been investigated. (orig.) [de

Voltage-current characteristics of a pin-plate system with different plate configurations

International Nuclear Information System (INIS)

Feng, Zhuangbo; Long, Zhengwei

2013-01-01

In this paper, the voltage-current (V-I) characteristics of a pin-plate system with four types of collection plate configurations are studied experimentally. The collection plates consider a single metal plate, a metal plate with a fly ash cake layer, a metal plate with a clean filter media and a metal plate with a dirty filter media. The results show that the clean filter media has no obvious effect on the V-I characteristics. But the dirty filter media reduces the current density because of its high resistance. The thick fly ash cake layer increase current density because of the anti-corona effect but the increment is not very obvious.

High Current, Low Voltage Power Converter [20kA, 6V] LHC Converter Prototype

CERN Document Server

Jørgensen, H E; Dupaquier, A; Fernqvist, G

1998-01-01

The superconducting LHC accelerator requires high currents (~12.5kA) and relatively low voltages (~10 V) for its magnets. The need to install the power converters underground is the driving force for reduced volume and high efficiency. Moreover, the LHC machine will require a very high level of performance from the power converters, particularly in terms of DC stability, dynamic response and also in matters of EMC. To meet these requirements soft-switching techniques will be used. This paper describes the development of a [20kA,6V] power converter intended as a stable high-current source for D CCT calibration and an evaluation prototype for the future LHC converters. The converter is made with a modular concept with five current sources [4kA,6V] in parallel. The 4kA sources are built as plu g-in modules: a diode rectifier on the AC mains with a damped L-C passive filter, a Zero Voltage Switching inverter working at 20 kHz and an output stage (high frequency transformers, Schottky rectifi ers and output filter...

Dynamics of 120 and 20 kV plasma focus devices with respect to density and current distribution, and neutron and X-ray emission

International Nuclear Information System (INIS)

Decker, G.; Nahrath, B.; Oppenlaender, T.; Pross, G.; Rueckle, B.; Schmidt, H.; Shakhatre, M.; Trunk, M.

1977-01-01

The experiments had two goals: (1) Better understanding of the dynamics and neutron production of the focus phase and (2) improved scaling of the neutron yield by operating a high-voltage focus. For the first goal, experiments with a 30-kJ/16-kV plasma focus of the Mather type (NESSI) were performed. The simultaneously applied diagnostics include interferometry, X-ray photography with channel plates, magnetic probes and scintillator/photomultiplier detectors for measuring hard X-ray and neutron emission. In the established chronology one can distinguish five phases in the development of the plasma focus: A compression phase is followed by a short (8 ns) very dense phase, where the density peaks at a minimum radius (t=0, authors' chronology). The plasma cylinder expands to a relatively long-lasting (30 to 70 ns) quiescent phase before instabilities occur. This short unstable phase is followed by a decay phase during which the neutron emission peaks. Important correlations between the plasma parameters and the neutron emission are discussed. Secondly, on the assumption that the neutron yield scales with a high power of the current, it was concluded that a high-voltage focus could result in higher neutron yield as compared with a lower voltage device of the same energy. The proper adjustments of the discharge parameters necessary due to the very short current risetime were investigated. (author)

Improved read disturb and write error rates in voltage-control spintronics memory (VoCSM) by controlling energy barrier height

Science.gov (United States)

Inokuchi, T.; Yoda, H.; Kato, Y.; Shimizu, M.; Shirotori, S.; Shimomura, N.; Koi, K.; Kamiguchi, Y.; Sugiyama, H.; Oikawa, S.; Ikegami, K.; Ishikawa, M.; Altansargai, B.; Tiwari, A.; Ohsawa, Y.; Saito, Y.; Kurobe, A.

2017-06-01

A hybrid writing scheme that combines the spin Hall effect and voltage-controlled magnetic-anisotropy effect is investigated in Ta/CoFeB/MgO/CoFeB/Ru/CoFe/IrMn junctions. The write current and control voltage are applied to Ta and CoFeB/MgO/CoFeB junctions, respectively. The critical current density required for switching the magnetization in CoFeB was modulated 3.6-fold by changing the control voltage from -1.0 V to +1.0 V. This modulation of the write current density is explained by the change in the surface anisotropy of the free layer from 1.7 mJ/m2 to 1.6 mJ/m2, which is caused by the electric field applied to the junction. The read disturb rate and write error rate, which are important performance parameters for memory applications, are drastically improved, and no error was detected in 5 × 108 cycles by controlling read and write sequences.

Voltage current characteristics of type III superconductors

Science.gov (United States)

Dorofejev, G. L.; Imenitov, A. B.; Klimenko, E. Yu.

1980-06-01

An adequate description of voltage-current characteristics is important in order to understand the nature of high critical current for the electrodynamic construction of type-III superconductors and for commercial superconductor specification. Homogenious monofilament and multifilament Nb-Ti, Nb-Zr, Nb 3Sn wires were investigated in different ranges of magnetic field, temperature and current. The longitudinal electric field for homogenious wires may be described by E=J ρnexp- T c/T 0+ T/T 0+ B/B 0+ J/J 0, where To, Bo, Jo are the increasing parameters, which depend weakly on B and T, of the electric field. The shape of the voltage-current characteristics of multifilament wires, and the parameter's dependence on temperature and magnetic field may be explained qualitatively by the longitudinal heterogeneous nature of the filaments. A method of attaining the complete specification of the wire's electro-physical properties is proposed. It includes the traditional description of a critical surface (ie the surface corresponding to a certain conventional effective resistivity in T, B, J - space) and a description of any increasing parameter that depends on B and T.

Photonic characterization of capacitance-voltage characteristics in MOS capacitors and current-voltage characteristics in MOSFETs

International Nuclear Information System (INIS)

Kim, H. C.; Kim, H. T.; Cho, S. D.; Song, S. J.; Kim, Y. C.; Kim, S. K.; Chi, S. S.; Kim, D. J.; Kim, D. M.

2002-01-01

Based on the photonic high-frequency capacitance-voltage (HF-CV) response of MOS capacitors, a new characterization method is reported for the analysis of interface states in MOS systems. An optical source with a photonic energy less than the silicon band-gap energy (hv g ) is employed for the photonic HF-CV characterization of interface states distributed in the photoresponsive energy band (E C - hv t C ). If a uniform distribution of trap levels is assumed, the density of interface states (D it ) in the photoresponsive energy band of MOS capacitors, characterized by the new photonic HF-CV method, was observed to be D it = 1 ∼ 5 x 10 11 eV -1 cm -2 . Photonic current-voltage characteristics (I D - V GS , V DS ) of MOSFETs, which are under control of the photoconductive and the photovoltaic effects, are also investigated under optical illumination

Effect of annealing on the second harmonic amplitude of Giant Magneto-Impedance (GMI) voltage of a Co-Fe-Si-B amorphous wire

Energy Technology Data Exchange (ETDEWEB)

Pal, S.K. [National Metallurgical Laboratory, Jamshedpur 831007 (India)], E-mail: skp@nmlindia.org; Panda, A.K.; Mitra, A. [National Metallurgical Laboratory, Jamshedpur 831007 (India)

2008-02-15

Second harmonic amplitude (V{sub 2f}) of Giant Magneto-Impedance (GMI) voltage of (Fe{sub 6}Co{sub 94}){sub 72.5}Si{sub 12.5}B{sub 15} amorphous wires has been studied systematically for as-cast and Joule-heated states. Joule heating was carried out at current densities (J) of 20-40 A/mm{sup 2} for a period of 1-300 min. The amplitude of the second harmonic voltage (V{sub 2f}) initially increased with J, attained maximum and then decreased. The maximum amplitude of V{sub 2f} was observed for the sample annealed at J=25 A/mm{sup 2} for 5 min. The second harmonic peak shifted towards the higher field side with the increase of annealing current density and annealing period (t{sub p}). Few-fold increase in the amplitude of the second harmonic voltage (V{sub 2f}) was observed due to the presence of a small dc bias current (I{sub b}) of amplitude 1 mA. The asymmetry in V{sub 2f} was also observed in a Joule-heated sample. The observed asymmetry has been correlated with the bias field generated between the surface crystallized layer and the amorphous core. A small bias current of amplitude of 1 mA was applied along the direction of the applied field to minimize the asymmetry.

50V All-PMOS Charge Pumps Using Low-Voltage Capacitors

KAUST Repository

Emira, Ahmed

2012-10-06

In this work, two high-voltage charge pumps are introduced. In order to minimize the area of the pumping capacitors, which dominates the overall area of the charge pump, high density capacitors have been utilized. Nonetheless, these high density capacitors suffer from low breakdown voltage which is not compatible with the targeted high voltage application. To circumvent the breakdown limitation, a special clocking scheme is used to limit the maximum voltage across any pumping capacitor. The two charge pump circuits were fabricated in a 0:6m CMOS technology with poly0-poly1 capacitors. The output voltage of the two charge pumps reached 42:8V and 51V while the voltage across any capacitor did not exceed the value of the input voltage. Compared to other designs reported in the literature, the proposed charge pump provides the highest output voltage which makes it more suitable for tuning MEMS devices.

50V All-PMOS Charge Pumps Using Low-Voltage Capacitors

KAUST Repository

Emira, Ahmed; AbdelGhany, M.; Elsayed, M.; Elshurafa, Amro M.; Sedky, S.; Salama, Khaled N.

2012-01-01

In this work, two high-voltage charge pumps are introduced. In order to minimize the area of the pumping capacitors, which dominates the overall area of the charge pump, high density capacitors have been utilized. Nonetheless, these high density capacitors suffer from low breakdown voltage which is not compatible with the targeted high voltage application. To circumvent the breakdown limitation, a special clocking scheme is used to limit the maximum voltage across any pumping capacitor. The two charge pump circuits were fabricated in a 0:6m CMOS technology with poly0-poly1 capacitors. The output voltage of the two charge pumps reached 42:8V and 51V while the voltage across any capacitor did not exceed the value of the input voltage. Compared to other designs reported in the literature, the proposed charge pump provides the highest output voltage which makes it more suitable for tuning MEMS devices.

High short-circuit current density CdTe solar cells using all-electrodeposited semiconductors

Energy Technology Data Exchange (ETDEWEB)

Echendu, O.K., E-mail: oechendu@yahoo.com; Fauzi, F.; Weerasinghe, A.R.; Dharmadasa, I.M.

2014-04-01

CdS/CdTe and ZnS/CdTe n–n heterojunction solar cells have been fabricated using all-electrodeposited semiconductors. The best devices show remarkable high short-circuit current densities of 38.5 mAcm{sup −2} and 47.8 mAcm{sup −2}, open-circuit voltages of 630 mV and 646 mV and conversion efficiencies of 8.0% and 12.0% respectively. The major strength of these device structures lies in the combination of n–n heterojunction with a large Schottky barrier at the n-CdTe/metal back contact which provides the required band bending for the separation of photo-generated charge carriers. This is in addition to the use of a high quality n-type CdTe absorber layer with high electron mobility. The potential barrier heights estimated for these devices from the current–voltage characteristics exceed 1.09 eV and 1.13 eV for CdS/CdTe and ZnS/CdTe cells respectively. The diode rectification factors of both devices are in excess of four orders of magnitude with reverse saturation current densities of 1.0 × 10{sup −7} Acm{sup −2} and 4.0 × 10{sup −7} Acm{sup −2} respectively. These all-electrodeposited solar cell device structures are currently being studied and developed as an alternative to the well-known p–n junction structures which utilise chemical bath-deposited CdS. The preliminary material growth, device fabrication and assessment results are presented in this paper. - Highlights: • Two-electrode deposition. • High J{sub sc} Schottky barrier solar cells. • CdCl{sub 2} + CdF{sub 2} treatment.

Contamination of current-clamp measurement of neuron capacitance by voltage-dependent phenomena

Science.gov (United States)

White, William E.

2013-01-01

Measuring neuron capacitance is important for morphological description, conductance characterization, and neuron modeling. One method to estimate capacitance is to inject current pulses into a neuron and fit the resulting changes in membrane potential with multiple exponentials; if the neuron is purely passive, the amplitude and time constant of the slowest exponential give neuron capacitance (Major G, Evans JD, Jack JJ. Biophys J 65: 423–449, 1993). Golowasch et al. (Golowasch J, Thomas G, Taylor AL, Patel A, Pineda A, Khalil C, Nadim F. J Neurophysiol 102: 2161–2175, 2009) have shown that this is the best method for measuring the capacitance of nonisopotential (i.e., most) neurons. However, prior work has not tested for, or examined how much error would be introduced by, slow voltage-dependent phenomena possibly present at the membrane potentials typically used in such work. We investigated this issue in lobster (Panulirus interruptus) stomatogastric neurons by performing current clamp-based capacitance measurements at multiple membrane potentials. A slow, voltage-dependent phenomenon consistent with residual voltage-dependent conductances was present at all tested membrane potentials (−95 to −35 mV). This phenomenon was the slowest component of the neuron's voltage response, and failure to recognize and exclude it would lead to capacitance overestimates of several hundredfold. Most methods of estimating capacitance depend on the absence of voltage-dependent phenomena. Our demonstration that such phenomena make nonnegligible contributions to neuron responses even at well-hyperpolarized membrane potentials highlights the critical importance of checking for such phenomena in all work measuring neuron capacitance. We show here how to identify such phenomena and minimize their contaminating influence. PMID:23576698

Design and construction of constant voltage and current regulated source with proper characteristics to be used in electronics laboratory designs

International Nuclear Information System (INIS)

Peon A, R.

1978-01-01

A regulated direct current feeding source was designed for the Nuclear Energy National Institute Electronics Labortory, with the following characteristics: a) voltage input 105-130V a.c. 50-60 Hz; b) voltage output 0.40 V d.c.; c) output current 0-2 Amp d.c.; d) load regulation 0.001%; e) line regulation 0.001%; f) ripple and noise 200 μ Vpp; g) temperature interval 3-60 0 C; h) stability 0.5%; i) output impedance as voltage source 0.01 ohms; j) transient response 50 μ seg. Besides of operating normally, that is as voltage source or current-source through the front controls, the source can be used and interconnected with one or other compatible sources (autoseries, autoparallel and programmed reference). The source will cost 70,000 pesos approximately. (author)

Current-voltage-temperature characteristics of DNA origami

Energy Technology Data Exchange (ETDEWEB)

Bellido, Edson P; Bobadilla, Alfredo D; Rangel, Norma L; Seminario, Jorge M [Department of Chemical Engineering, Texas A and M University, College Station, TX 77843 (United States); Zhong Hong; Norton, Michael L [Department of Chemistry, Marshall University, Huntington, WV 25755 (United States); Sinitskii, Alexander [Department of Chemistry, Rice University, Houston, TX 77005 (United States)

2009-04-29

The temperature dependences of the current-voltage characteristics of a sample of triangular DNA origami deposited in a 100 nm gap between platinum electrodes are measured using a probe station. Below 240 K, the sample shows high impedance, similar to that of the substrate. Near room temperature the current shows exponential behavior with respect to the inverse of temperature. Sweep times of 1 s do not yield a steady state; however sweep times of 450 s for the bias voltage secure a steady state. The thermionic emission and hopping conduction models yield similar barriers of {approx}0.7 eV at low voltages. For high voltages, the hopping conduction mechanism yields a barrier of 0.9 eV and the thermionic emission yields 1.1 eV. The experimental data set suggests that the dominant conduction mechanism is hopping in the range 280-320 K. The results are consistent with theoretical and experimental estimates of the barrier for related molecules.

Current-voltage-temperature characteristics of DNA origami

International Nuclear Information System (INIS)

Bellido, Edson P; Bobadilla, Alfredo D; Rangel, Norma L; Seminario, Jorge M; Zhong Hong; Norton, Michael L; Sinitskii, Alexander

2009-01-01

The temperature dependences of the current-voltage characteristics of a sample of triangular DNA origami deposited in a 100 nm gap between platinum electrodes are measured using a probe station. Below 240 K, the sample shows high impedance, similar to that of the substrate. Near room temperature the current shows exponential behavior with respect to the inverse of temperature. Sweep times of 1 s do not yield a steady state; however sweep times of 450 s for the bias voltage secure a steady state. The thermionic emission and hopping conduction models yield similar barriers of ∼0.7 eV at low voltages. For high voltages, the hopping conduction mechanism yields a barrier of 0.9 eV and the thermionic emission yields 1.1 eV. The experimental data set suggests that the dominant conduction mechanism is hopping in the range 280-320 K. The results are consistent with theoretical and experimental estimates of the barrier for related molecules.

Possible influence of the voltage dependence of the Josephson tunneling current I(V,psi) on the corresponding current-voltage characteristic

International Nuclear Information System (INIS)

Hahlbohm, H.D.; Luebbig, H.; Luther, H.

1975-01-01

Analog computer calculations of the current-voltage characteristic involving the voltage dependence of the amplitudes of the tunneling current equation explicitly, for the case of a current driven tunneling junction at different temperatures are reported on. These studies are based upon the adiabatic representation of the current-phase relation. The influence of retarding effects is not included. Therefore the computational results can lead to practical consequences at best in the range near the transition temperature. (Auth.)

Determination of bulk and interface density of states in metal oxide semiconductor thin-film transistors by using capacitance-voltage characteristics

Science.gov (United States)

Wei, Xixiong; Deng, Wanling; Fang, Jielin; Ma, Xiaoyu; Huang, Junkai

2017-10-01

A physical-based straightforward extraction technique for interface and bulk density of states in metal oxide semiconductor thin film transistors (TFTs) is proposed by using the capacitance-voltage (C-V) characteristics. The interface trap density distribution with energy has been extracted from the analysis of capacitance-voltage characteristics. Using the obtained interface state distribution, the bulk trap density has been determined. With this method, for the interface trap density, it is found that deep state density nearing the mid-gap is approximately constant and tail states density increases exponentially with energy; for the bulk trap density, it is a superposition of exponential deep states and exponential tail states. The validity of the extraction is verified by comparisons with the measured current-voltage (I-V) characteristics and the simulation results by the technology computer-aided design (TCAD) model. This extraction method uses non-numerical iteration which is simple, fast and accurate. Therefore, it is very useful for TFT device characterization.

Design of constant current charging power supply for J-TEXT ohmic field capacitor banks

International Nuclear Information System (INIS)

Lv Shudong; Zhang Ming; Rao Bo; Yu Kexun; Yang Cheng

2014-01-01

The charging characteristic of the capacitor charging power supply was analyzed with practical series resonant topology. The method that setting two current taps and regulating PWM switching frequency was putted forward with close loop controlling algorithm to charge the multi-group capacitor banks with constant current. A capacitor charging power supply with the max output current 6.5 A and the max output voltage 2000 V is designed. Experimental results show that, this power supply can charge the four capacitor banks to any four different voltages in 1 minute with charging accuracy less than 1%, and meet the requirements of J-TEXT ohmic field power system. (authors)

Low Voltage Current Mode Switched-Current-Mirror Mixer

Directory of Open Access Journals (Sweden)

Chunhua Wang

2009-09-01

Full Text Available A new CMOS active mixer topology can operate at 1 V supply voltage by use of SCM (switched currentmirror. Such current-mode mixer requires less voltage headroom with good linearization. Mixing is achieved with four improved current mirrors, which are alternatively activated. For ideal switching, the operation is equivalent to a conventional active mixer. This paper analyzes the performance of the SCM mixer, in comparison with the conventional mixer, demonstrating competitive performance at a lower supply voltage. Moreover, the new mixer’s die, without any passive components, is very small, and the conversion gain is easy to adjust. An experimental prototype was designed and simulated in standard chartered 0.18μm RF CMOS Process with Spectre in Cadence Design Systems. Experimental results show satisfactory mixer performance at 2.4 GHz.

Current-voltage characteristics of C70 solid near Meyer-Neldel temperature

Science.gov (United States)

Onishi, Koichi; Sezaimaru, Kouki; Nakashima, Fumihiro; Sun, Yong; Kirimoto, Kenta; Sakaino, Masamichi; Kanemitsu, Shigeru

2017-06-01

The current-voltage characteristics of the C70 solid with hexagonal closed-packed structures were measured in the temperature range of 250-450 K. The current-voltage characteristics can be described as a temporary expedient by a cubic polynomial of the voltage, i = a v 3 + b v 2 + c v + d . Moreover, the Meyer-Neldel temperature of the C70 solid was confirmed to be 310 K, at which a linear relationship between the current and voltage was observed. Also, at temperatures below the Meyer-Neldel temperature, the current increases with increasing voltage. On the other hand, at temperatures above the Meyer-Neldel temperature a negative differential conductivity effect was observed at high voltage side. The negative differential conductivity was related to the electric field and temperature effects on the mobility of charge carrier, which involve two variations in the carrier concentration and the activation energy for carrier hopping transport.

Field-aligned current density versus electric potential characteristics for magnetospheric flux tubes

International Nuclear Information System (INIS)

Lemaire, J.; Scherer, M.

1983-01-01

The field-aligned current density (Jsub(tot)) is a non-linear function of the applied potential difference (phi) between the ionosphere and the magnetosphere. This nonlinear function has been calculated for plasma boundary conditions typical in a dayside cusp magnetic flux tube. The J-characteristic of such a flux tube changes when the temperatures of the warm magnetospheric electrons and of the cold ionospheric electrons are modified; it changes also when the relative density of the warm plasma is modified; the presence of trapped secondary electrons changes also the J-characteristic. The partial currents contributed by the warm and cold electrons, and by warm and cold ions are illustrated. The dynamic characteristic of an electric circuit depends on the static characteristic of each component of the sytem: i.e. the resistive ionosphere, the return current region, and the region of particle precipitation whose field-aligned current/voltage characteristics have been studied in this article

Ultra-Low Voltage Class AB Switched Current Memory Cell

DEFF Research Database (Denmark)

Igor, Mucha

1996-01-01

This paper presents the theoretical basis for the design of class AB switched current memory cells employing floating-gate MOS transistors, suitable for ultra-low-voltage applications. To support the theoretical assumptions circuits based on these cells were designed using a CMOS process with thr......This paper presents the theoretical basis for the design of class AB switched current memory cells employing floating-gate MOS transistors, suitable for ultra-low-voltage applications. To support the theoretical assumptions circuits based on these cells were designed using a CMOS process...... with threshold voltages of 0.9V. Both hand calculations and PSPICE simulations showed that the cells designed allowed a maximum signal range better than +/-13 micoamp, with a supply voltage down to 1V and a quiescent bias current of 1 microamp, resulting in a very high current efficiency and effective power...

Current-Voltage Characteristics of the Metal / Organic Semiconductor / Metal Structures: Top and Bottom Contact Configuration Case

Directory of Open Access Journals (Sweden)

Šarūnas MEŠKINIS

2013-03-01

Full Text Available In present study five synthesized organic semiconductor compounds have been used for fabrication of the planar metal / organic semiconductor / metal structures. Both top electrode and bottom electrode configurations were used. Current-voltage (I-V characteristics of the samples were investigated. Effect of the hysteresis of the I-V characteristics was observed for all the investigated samples. However, strength of the hysteresis was dependent on the organic semiconductor used. Study of I-V characteristics of the top contact Al/AT-RB-1/Al structures revealed, that in (0 – 500 V voltages range average current of the samples measured in air is only slightly higher than current measured in nitrogen ambient. Deposition of the ultra-thin diamond like carbon interlayer resulted in both decrease of the hysteresis of I-V characteristics of top contact Al/AT-RB-1/Al samples. However, decreased current and decreased slope of the I-V characteristics of the samples with diamond like carbon interlayer was observed as well. I-V characteristic hysteresis effect was less pronounced in the case of the bottom contact metal/organic semiconductor/metal samples. I-V characteristics of the bottom contact samples were dependent on electrode metal used.DOI: http://dx.doi.org/10.5755/j01.ms.19.1.3816

Current-Voltage Characteristics of Quasi-One-Dimensional Superconductors

DEFF Research Database (Denmark)

Vodolazov, D.Y.; Peeters, F.M.; Piraux, L.

2003-01-01

The current-voltage (I-V) characteristics of quasi-one-dimensional superconductors were discussed. The I-V characteristics exhibited an unusual S behavior. The dynamics of superconducting condensate and the existence of two different critical currents resulted in such an unusual behavior....

A FAST study of quasi-static structure ("Inverted-V") potential drops and their latitudinal dependence in the premidnight sector and ramifications for the current-voltage relationship

Science.gov (United States)

Dombeck, J.; Cattell, C.; McFadden, J.

2013-09-01

Utilizing FAST satellite electron measurements, we present the first reported investigation of the dependency on latitude of quasi-static structure ("inverted-V") potential drop magnitude (Φ). A trend of lower Φ at lower latitudes in the premidnight sector on field lines with dark foot points was observed. This trend is supported both statistically and in individual satellite crossings. The existence of two distinct peaks in occurrence probability for Φ was also observed: one between ~2 kV and 10 kV and the other at somewhat less than 1 kV. The relative occurrence of structures with Φ in the higher (>2 kV) peak is significantly reduced with decreasing latitude. This partially accounts for the statistical trend of lower potential drop magnitudes at lower latitudes. The two Φ occurrence frequency peaks correspond to two different regimes (one with eΦ/kTe ~ or > 1 and one with eΦ/kTe current-voltage relation where source electron density rather than Φ is most directly controlled by the field-aligned current density. These observations and their ramifications represent a significant step forward in the understanding of field-aligned currents, auroral acceleration, and magnetospheric-ionospheric coupling.

CIGS J-V distortion in the absence of blue photons

International Nuclear Information System (INIS)

Pudov, A.O.; Sites, J.R.; Contreras, M.A.; Nakada, T.; Schock, H.-W.

2005-01-01

Common buffer materials used with CuInGaSe 2 (CIGS) absorbers produce conduction-band barriers that may significantly distort the current-voltage (J-V) curves, especially when short-wavelength photons are excluded from the illumination spectrum. Earlier work documented this effect for CuInSe 2 (CIS) absorbers (band gap near 1.0 eV) with CdS buffers. Higher band-gap (no. approxno. 1.15 eV) CIGS absorbers show little or no distortion with CdS buffer layers. However, wider band gap (lower electron affinity) ZnS(O,OH) or InS(O,OH) buffers, prepared by chemical-bath deposition (CBD), clearly show the J-V distortion. The distortions have a turn-on time constant the order of a minute and turn-off time constant the order of a day, and they correlate with major variations in apparent quantum efficiency (QE) measured with varying intensity and spectral content of bias light. The results are consistent with a conduction-band spike barrier that increases with buffer band gap and is larger when the electron concentration in the buffer is small

Influence of the spatially inhomogeneous gap distribution on the quasiparticle current in c-axis junctions involving d-wave superconductors with charge density waves.

Science.gov (United States)

Ekino, T; Gabovich, A M; Suan Li, Mai; Szymczak, H; Voitenko, A I

2016-11-09

The quasiparticle tunnel current J(V) between the superconducting ab-planes along the c-axis and the corresponding conductance [Formula: see text] were calculated for symmetric junctions composed of disordered d-wave layered superconductors partially gapped by charge density waves (CDWs). Here, V is the voltage. Both the checkerboard and unidirectional CDWs were considered. It was shown that the spatial spread of the CDW-pairing strength substantially smears the peculiarities of G(V) appropriate to uniform superconductors. The resulting curves G(V) become very similar to those observed for a number of cuprates in intrinsic junctions, e.g. mesas. In particular, the influence of CDWs may explain the peak-dip-hump structures frequently found for high-T c oxides.

Current-Voltage Characteristics of Bi-dithiolbenzene in Parallel Arrangement

International Nuclear Information System (INIS)

Boudjella, Aissa

2011-01-01

The low voltage conductance of interacting two 1,4-dithiolbenzene (DTB) molecules is investigated. The simulation results show that the electron transport can be controlled either by changing the Fermi level position E f or modifying its inter-molecular spacing d. Molecular assembly system with close interaction between DTB units, affects significantly the conductance. In addition, the position of the Fermi plays an important role in determining the current flow. Moreover, it is important to note that E f affects not only the threshold voltage V th , but also the saturation voltage V sat . When E f approaches the LUMO energy level, V th decreases, while V sat increases. To conclude, the threshold voltage and the saturation voltage depend on the Fermi level position and the inter-molecular spacing.

Low-voltage organic thin film transistors (OTFTs) using crosslinked polyvinyl alcohol (PVA)/neodymium oxide (Nd2O3) bilayer gate dielectrics

Science.gov (United States)

Khound, Sagarika; Sarma, Ranjit

2018-01-01

We have reported here on the design, processing and dielectric properties of pentacene-based organic thin film transitors (OTFTs) with a bilayer gate dilectrics of crosslinked PVA/Nd2O3 which enables low-voltage organic thin film operations. The dielectric characteristics of PVA/Nd2O3 bilayer films are studied by capacitance-voltage ( C- V) and current-voltage ( I- V) curves in the metal-insulator-metal (MIM) structure. We have analysed the output electrical responses and transfer characteristics of the OTFT devices to determine their performance of OTFT parameters. The mobility of 0.94 cm2/Vs, the threshold voltage of - 2.8 V, the current on-off ratio of 6.2 × 105, the subthreshold slope of 0.61 V/decade are evaluated. Low leakage current of the device is observed from current density-electric field ( J- E) curve. The structure and the morphology of the device are studied using X-ray diffraction (XRD) and atomic force microscope (AFM), respectively. The study demonstrates an effective way to realize low-voltage, high-performance OTFTs at low cost.

Current-voltage hysteresis and dielectric properties of PVA coated MWCNT film

Science.gov (United States)

Das, Amit Kumar; Meikap, Ajit Kumar

2017-12-01

In this work, we have prepared polyvinyl alcohol (PVA) coated multiwall carbon nanotube (MWCNT) film by an in situ chemical oxidative preparation technique. The thermogravimetric analysis clearly explains the thermal degradation of pure polymer and polymer nanocomposite film. We have studied the AC electrical transport properties and current-voltage (I-V) characteristic of PVA-MWCNT composites within the temperature range 300 ≤ T ≤ 423 K and frequency range 150 Hz ≤ f ≤ 2 MHz. It is observed that the dielectric constant of the composite film increases significantly. The frequency variation of AC conductivity follows the power law ( ωS ) and a sharp transition from small polaron tunneling to correlated barrier hopping model is found. The imaginary part of electric modulus shows non-Debye type asymmetric behaviour. The impedance spectroscopy shows the negative temperature coefficient of resistance of the composite film. Nyquist plot of the composite film at different temperatures is established from impedance measurement. The current-voltage characteristic (under ± 20 V) shows hysteresis behaviour and field dependent resistance. We simulate the experimentally observed current density-electric field data with the established theory.

Current-voltage hysteresis and dielectric properties of PVA coated MWCNT film

Science.gov (United States)

Das, Amit Kumar; Meikap, Ajit Kumar

2018-06-01

In this work, we have prepared polyvinyl alcohol (PVA) coated multiwall carbon nanotube (MWCNT) film by an in situ chemical oxidative preparation technique. The thermogravimetric analysis clearly explains the thermal degradation of pure polymer and polymer nanocomposite film. We have studied the AC electrical transport properties and current-voltage (I-V) characteristic of PVA-MWCNT composites within the temperature range 300 ≤ T ≤ 423 K and frequency range 150 Hz ≤ f ≤ 2 MHz. It is observed that the dielectric constant of the composite film increases significantly. The frequency variation of AC conductivity follows the power law ( ωS ) and a sharp transition from small polaron tunneling to correlated barrier hopping model is found. The imaginary part of electric modulus shows non-Debye type asymmetric behaviour. The impedance spectroscopy shows the negative temperature coefficient of resistance of the composite film. Nyquist plot of the composite film at different temperatures is established from impedance measurement. The current-voltage characteristic (under ± 20 V) shows hysteresis behaviour and field dependent resistance. We simulate the experimentally observed current density-electric field data with the established theory.

Voltage current characteristics of type III superconductors

International Nuclear Information System (INIS)

Dorofejev, G.L.; Imenitov, A.B.; Klimenko, E.Y.

1980-01-01

An adequate description of voltage-current characteristics is important in order to understand the nature of high critical current for the electrodynamic construction of type-III superconductors and for commercial superconductor specification. Homogeneous monofilament and multifilament Nb-Ti, Nb-Zr,Nb 3 Sn wires were investigated in different ranges of magnetic field, temperature and current. The shape of the voltage-current characteristics of multifilament wires, and the parameter's dependence on temperature and magnetic field may be explained qualitatively by the longitudinal heterogeneous nature of the filaments. A method of attaining the complete specification of the wire's electro-physical properties is proposed. It includes the traditional description of a critical surface (i.e. the surface corresponding to a certain conventional effective resistivity in T,B,J-space) and a description of any increasing parameter that depends on B and T. (author)

Voltage current characteristics of type III superconductors

Energy Technology Data Exchange (ETDEWEB)

Dorofeiev, G L; Imenitov, A B; Klimenko, E Y [Gosudarstvennyi Komitet po Ispol' zovaniyu Atomnoi Ehnergii SSSR, Moscow. Inst. Atomnoi Ehnergii

1980-06-01

An adequate description of voltage-current characteristics is important in order to understand the nature of high critical current for the electrodynamic construction of type-III superconductors and for commercial superconductor specification. Homogeneous monofilament and multifilament Nb-Ti, Nb-Zr,Nb/sub 3/Sn wires were investigated in different ranges of magnetic field, temperature and current. The shape of the voltage-current characteristics of multifilament wires, and the parameter's dependence on temperature and magnetic field may be explained qualitatively by the longitudinal heterogeneous nature of the filaments. A method of attaining the complete specification of the wire's electro-physical properties is proposed. It includes the traditional description of a critical surface (i.e. the surface corresponding to a certain conventional effective resistivity in T,B,J-space) and a description of any increasing parameter that depends on B and T.

Cathode fall model and current-voltage characteristics of field emission driven direct current microplasmas

Energy Technology Data Exchange (ETDEWEB)

Venkattraman, Ayyaswamy [Department of Applied Mechanics, Indian Institute of Technology Madras, Chennai 600036 (India)

2013-11-15

The post-breakdown characteristics of field emission driven microplasma are studied theoretically and numerically. A cathode fall model assuming a linearly varying electric field is used to obtain equations governing the operation of steady state field emission driven microplasmas. The results obtained from the model by solving these equations are compared with particle-in-cell with Monte Carlo collisions simulation results for parameters including the plasma potential, cathode fall thickness, ion number density in the cathode fall, and current density vs voltage curves. The model shows good overall agreement with the simulations but results in slightly overpredicted values for the plasma potential and the cathode fall thickness attributed to the assumed electric field profile. The current density vs voltage curves obtained show an arc region characterized by negative slope as well as an abnormal glow discharge characterized by a positive slope in gaps as small as 10 μm operating at atmospheric pressure. The model also retrieves the traditional macroscale current vs voltage theory in the absence of field emission.

Cathode fall model and current-voltage characteristics of field emission driven direct current microplasmas

International Nuclear Information System (INIS)

Venkattraman, Ayyaswamy

2013-01-01

The post-breakdown characteristics of field emission driven microplasma are studied theoretically and numerically. A cathode fall model assuming a linearly varying electric field is used to obtain equations governing the operation of steady state field emission driven microplasmas. The results obtained from the model by solving these equations are compared with particle-in-cell with Monte Carlo collisions simulation results for parameters including the plasma potential, cathode fall thickness, ion number density in the cathode fall, and current density vs voltage curves. The model shows good overall agreement with the simulations but results in slightly overpredicted values for the plasma potential and the cathode fall thickness attributed to the assumed electric field profile. The current density vs voltage curves obtained show an arc region characterized by negative slope as well as an abnormal glow discharge characterized by a positive slope in gaps as small as 10 μm operating at atmospheric pressure. The model also retrieves the traditional macroscale current vs voltage theory in the absence of field emission

Modulation of voltage-gated channel currents by harmaline and harmane.

Science.gov (United States)

Splettstoesser, Frank; Bonnet, Udo; Wiemann, Martin; Bingmann, Dieter; Büsselberg, Dietrich

2005-01-01

Harmala alkaloids are endogenous substances, which are involved in neurodegenerative disorders such as M. Parkinson, but some of them also have neuroprotective effects in the nervous system. While several sites of action at the cellular level (e.g. benzodiazepine receptors, 5-HT and GABA(A) receptors) have been identified, there is no report on how harmala alkaloids interact with voltage-gated membrane channels. The aim of this study was to investigate the effects of harmaline and harmane on voltage-activated calcium- (I(Ca(V))), sodium- (I(Na(V))) and potassium (I(K(V)))-channel currents, using the whole-cell patch-clamp method with cultured dorsal root ganglion neurones of 3-week-old rats. Currents were elicited by voltage steps from the holding potential to different command potentials. Harmaline and harmane reduced I(Ca(V)), I(Na(V)) and I(K(V)) concentration-dependent (10-500 microM) over the voltage range tested. I(Ca(V)) was reduced with an IC(50) of 100.6 microM for harmaline and by a significantly lower concentration of 75.8 microM (P<0.001, t-test) for harmane. The Hill coefficient was close to 1. Threshold concentration was around 10 microM for both substances. The steady state of inhibition of I(Ca(V)) by harmaline or harmane was reached within several minutes. The action was not use-dependent and at least partly reversible. It was mainly due to a reduction in the sustained calcium channel current (I(Ca(L+N))), while the transient voltage-gated calcium channel current (I(Ca(T))) was only partially affected. We conclude that harmaline and harmane are modulators of I(Ca(V)) in vitro. This might be related to their neuroprotective effects.

Current-voltage curves of gold quantum point contacts revisited

DEFF Research Database (Denmark)

Hansen, K.; Nielsen, S K.; Brandbyge, Mads

2000-01-01

We present measurements of current-voltage (I-V) curves on gold quantum point contacts (QPCs) with a conductance up to 4 G(0) (G(0) = 2e(2)/h is the conductance quantum) and voltages up to 2 V. The QPCs are formed between the gold tip of a scanning tunneling microscope and a Au(110) surface under...

Nonlinear current-voltage behavior in PZT thin films

Energy Technology Data Exchange (ETDEWEB)

Xiao, Mi; Zhang, Weikang; Zhang, Zebin; Li, Shida; Zhang, Ping; Lan, Kuibo [Tianjin University, School of Electrical and Information Engineering, Tianjin (China)

2017-05-15

In this paper, Pb(Zr{sub 0.52}Ti{sub 0.48})O{sub 3} (PZT) thin films were prepared by sol-gel synthesis and characterized by X-ray diffraction, field emission scanning electron microscopy and current-voltage measurements. Here, we demonstrate that in addition to the outstanding ferroelectric and dielectric properties, the PZT films also have remarkably nonlinear current-voltage characteristics. Considering the contact of semi-conductive grains in the PZT films, a double Schottky barrier (DSB) model may be responsible for such phenomena. The test results show that with the decrease of annealing temperature and the increase of the film thickness, the threshold voltages (V{sub th}) increase obviously. The maximum V{sub th} value of 60.95 V and the minimum value of 6.9 V in our experiments were obtained from the five-layered samples annealed at 600 C and the two-layered samples annealed at 700 C, respectively. As a result, PZT thin film may lead to efficient switching and sensing devices. (orig.)

Features of current-voltage characteristic of nonequilibrium trench MOS barrier Schottky diode

Science.gov (United States)

Mamedov, R. K.; Aslanova, A. R.

2018-06-01

The trench MOS barrier Schottky diodes (TMBS diode) under the influence of the voltage drop of the additional electric field (AEF) appearing in the near-contact region of the semiconductor are in a nonequilibrium state and their closed external circuit flows currents in the absence of an external voltage. When an external voltage is applied to the TMBS diode, the current transmission is described by the thermionic emission theory with a specific feature. Both forward and reverse I-V characteristics of the TMBS diode consist of two parts. In the initial first part of the forward I-V characteristic there are no forward currents, but reverse saturation currents flow, in its subsequent second part the currents increase exponentially with the voltage. In the initial first part of the reverse I-V characteristic, the currents increase in an abrupt way and in the subsequent second part the saturation currents flow under the action of the image force. The mathematical expressions for forward and reverse I-V characteristic of the TMBS diode and also narrow or nanostructure Schottky diode are proposed, which are in good agreement with the results of experimental and calculated I-V characteristics.

Barrier lowering effect and dark current characteristics in asymmetric GaAs/AlGaAs multi quantum well structure

Energy Technology Data Exchange (ETDEWEB)

Altin, E. [Inonu University, Scientific and Technological Research Center, Malatya (Turkey); Anadolu University, Department of Physics, Eskisehir (Turkey); Hostut, M. [Akdeniz University, Department of Secondary Education of Science and Maths., Division of Physics Education, Antalya (Turkey); Ergun, Y. [Anadolu University, Department of Physics, Eskisehir (Turkey)

2011-12-15

In this study, we investigate dark current voltage characteristics of GaAs/AlGaAs staircase-like asymmetric multiquantum well structure at various temperatures experimentally. The activation energy is calculated by using Arrhenius plots at different voltages. It is found that the activation energy decreased with increasing electric field. This result is evaluated using a barrier lowering effect which is a combination of geometrical and Poole-Frenkel effects. Measured dark current density-voltage (J-V) characteristics compared with the Levine model, 3D carrier drift model and the emission capture model. The best agreement with the experimental results of dark current densities is obtained by the Levine model. (orig.)

A 600kV 15mA Cockcroft-Walton high-voltage power supply with high stability and low-ripple voltage

International Nuclear Information System (INIS)

Su Tongling; Zhang Yimin; Chen Shangwen; Liu Yantong; Lv Huiyi; Liu Jiangtao

2006-01-01

A Cockcroft-Walton high-voltage power supply with high stability and low-ripple voltage has been developed. This power supply has been operated in a ns pulse neutron generator. The maximum non-load voltage is 600kV while the working voltage and load current are 550kV and 15mA, respectively. The tested results indicate that when the power supply is operated at 300kV, 6.7mA and the input voltage varies +/-10%, the long-term stability of the output voltage is S=(0.300-1.006)x10 -3 . The ripple voltage is δU P-P =6.2V at 300kV, 6.8-8.3mA and the ratio of δU P-P to the output voltage V H is δU P-P /V H =2.1x10 -5

Operating Mechanisms of Mesoscopic Perovskite Solar Cells through Impedance Spectroscopy and J-V Modeling.

Science.gov (United States)

Zarazúa, Isaac; Sidhik, Siraj; Lopéz-Luke, Tzarara; Esparza, Diego; De la Rosa, Elder; Reyes-Gomez, Juan; Mora-Seró, Iván; Garcia-Belmonte, Germà

2017-12-21

The performance of perovskite solar cell (PSC) is highly sensitive to deposition conditions, the substrate, humidity, and the efficiency of solvent extraction. However, the physical mechanism involved in the observed changes of efficiency with different deposition conditions has not been elucidated yet. In this work, PSCs were fabricated by the antisolvent deposition (AD) and recently proposed air-extraction antisolvent (AAD) process. Impedance analysis and J-V curve fitting were used to analyze the photogeneration, charge transportation, recombination, and leakage properties of PSCs. It can be elucidated that the improvement in morphology of perovskite film promoted by AAD method leads to increase in light absorption, reduction in recombination sites, and interstitial defects, thus enhancing the short-circuit current density, open-circuit voltage, and fill factor. This study will open up doors for further improvement of device and help in understanding its physical mechanism and its relation to the deposition methods.

Insulation Resistance and Leakage Currents in Low-Voltage Ceramic Capacitors with Cracks

Science.gov (United States)

Teverovsky, Alexander A.

2016-01-01

Measurement of insulation resistance (IR) in multilayer ceramic capacitors (MLCCs) is considered a screening technique that ensures the dielectric is defect-free. This work analyzes the effectiveness of this technique for revealing cracks in ceramic capacitors. It is shown that absorption currents prevail over the intrinsic leakage currents during standard IR measurements at room temperature. Absorption currents, and consequently IR, have a weak temperature dependence, increase linearly with voltage (before saturation), and are not sensitive to the presence of mechanical defects. In contrary, intrinsic leakage currents increase super-linearly with voltage and exponentially with temperature (activation energy is in the range from 0.6 eV to 1.1 eV). Leakage currents associated with the presence of cracks have a weaker dependence on temperature and voltage compared to the intrinsic leakage currents. For this reason, intrinsic leakage currents prevail at high temperatures and voltages, thus masking the presence of defects.

Submicrosecond linear pulse transformer for 800 kV voltage with modular low-inductance primary power supply

Energy Technology Data Exchange (ETDEWEB)

Bykov, Yu. A.; Krastelev, E. G., E-mail: ekrastelev@yandex.ru; Popov, G. V.; Sedin, A. A.; Feduschak, V. F. [Russian Academy of Sciences, Joint Institute for High Temperatures (Russian Federation)

2016-12-15

A pulsed power source with voltage amplitude up to 800 kV for fast charging (350–400 ns) of the forming line of a high-current nanosecond accelerator is developed. The source includes capacitive energy storage and a linear pulse transformer. The linear transformer consists of a set of 20 inductors with circular ferromagnetic cores surrounded by primary windings inside of which a common stock adder of voltage with film-glycerol insulation is placed. The primary energy storage consists of ten modules, each of which is a low-inductance assembly of two capacitors with a capacitance of 0.35 μF and one gas switch mounted in the same frame. The total energy stored in capacitors is 5.5 kJ at the operating voltage of 40 kV. According to test results, the parameters of the equivalent circuit of the source are the following: shock capacitance = 17.5 nF, inductance = 2 μH, resistance = 3.2 Ω.

Current-voltage characteristics of a superconducting slab under a superimposed small AC magnetic field

International Nuclear Information System (INIS)

Matsushita, Teruo; Yamafuji, Kaoru; Sakamoto, Nobuyoshi.

1977-01-01

In case of applying superconductors to electric machinery or high intensity field magnets for fusion reactors, the superconductors are generally expected to be sensible to small field fluctuation besides DC magnetic field. The behavior of superconductors in DC magnetic field superimposed with small AC magnetic field has been investigated often experimentally, and the result has been obtained that the critical current at which DC flow voltage begins to appear extremely decreased or disappeared. Some theoretical investigations have been carried out on this phenomenon so far, however, their application has been limited to the region where frequency is sufficiently low or which is close to the critical magnetic field. Purpose of this report is to deal with the phenomenon in more unified way by analyzing the behavior of magnetic flux lines in a superconductor under a superimposed small AC field using the criticalstate model including viscous force. In order to solve the fundamental equation in this report, first the solution has been obtained in the quasi-static state neglecting viscous force, then about the cases that current density J is not more than Jc and J is larger than Jc, concerning the deviation from the quasi-static limit by employing successive approximation. Current-voltage characteristics have been determined by utilizing the above results. This method seems to be most promising at present except the case of extremely high frequency. (Wakatsuki, Y.)

Enhancing critical current density of cuprate superconductors

Science.gov (United States)

Chaudhari, Praveen

2015-06-16

The present invention concerns the enhancement of critical current densities in cuprate superconductors. Such enhancement of critical current densities include using wave function symmetry and restricting movement of Abrikosov (A) vortices, Josephson (J) vortices, or Abrikosov-Josephson (A-J) vortices by using the half integer vortices associated with d-wave symmetry present in the grain boundary.

Verification of high voltage rf capacitive sheath models with particle-in-cell simulations

Science.gov (United States)

Wang, Ying; Lieberman, Michael; Verboncoeur, John

2009-10-01

Collisionless and collisional high voltage rf capacitive sheath models were developed in the late 1980's [1]. Given the external parameters of a single-frequency capacitively coupled discharge, plasma parameters including sheath width, electron and ion temperature, plasma density, power, and ion bombarding energy can be estimated. One-dimensional electrostatic PIC codes XPDP1 [2] and OOPD1 [3] are used to investigate plasma behaviors within rf sheaths and bulk plasma. Electron-neutral collisions only are considered for collisionless sheaths, while ion-neutral collisions are taken into account for collisional sheaths. The collisionless sheath model is verified very well by PIC simulations for the rf current-driven and voltage-driven cases. Results will be reported for collisional sheaths also. [1] M. A. Lieberman, IEEE Trans. Plasma Sci. 16 (1988) 638; 17 (1989) 338 [2] J. P. Verboncoeur, M. V. Alves, V. Vahedi, and C. K. Birdsall, J. Comp. Phys. 104 (1993) 321 [3] J. P. Verboncoeur, A. B. Langdon and N. T. Gladd, Comp. Phys. Comm. 87 (1995) 199

Modeling space-charge-limited currents in organic semiconductors: Extracting trap density and mobility

KAUST Repository

Dacuña, Javier

2011-11-28

We have developed and have applied a mobility edge model that takes drift and diffusion currents to characterize the space-charge-limited current in organic semiconductors into account. The numerical solution of the drift-diffusion equation allows the utilization of asymmetric contacts to describe the built-in potential within the device. The model has been applied to extract information of the distribution of traps from experimental current-voltage measurements of a rubrene single crystal from Krellner showing excellent agreement across several orders of magnitude in the current. Although the two contacts are made of the same metal, an energy offset of 580 meV between them, ascribed to differences in the deposition techniques (lamination vs evaporation) was essential to correctly interpret the shape of the current-voltage characteristics at low voltage. A band mobility of 0.13cm 2V-1s-1 for holes is estimated, which is consistent with transport along the long axis of the orthorhombic unit cell. The total density of traps deeper than 0.1 eV was 2.2×1016cm -3. The sensitivity analysis and error estimation in the obtained parameters show that it is not possible to accurately resolve the shape of the trap distribution for energies deeper than 0.3 eV or shallower than 0.1 eV above the valence-band edge. The total number of traps deeper than 0.3 eV, however, can be estimated. Contact asymmetry and the diffusion component of the current play an important role in the description of the device at low bias and are required to obtain reliable information about the distribution of deep traps. © 2011 American Physical Society.

Current-voltage curves for molecular junctions computed using all-electron basis sets

International Nuclear Information System (INIS)

Bauschlicher, Charles W.; Lawson, John W.

2006-01-01

We present current-voltage (I-V) curves computed using all-electron basis sets on the conducting molecule. The all-electron results are very similar to previous results obtained using effective core potentials (ECP). A hybrid integration scheme is used that keeps the all-electron calculations cost competitive with respect to the ECP calculations. By neglecting the coupling of states to the contacts below a fixed energy cutoff, the density matrix for the core electrons can be evaluated analytically. The full density matrix is formed by adding this core contribution to the valence part that is evaluated numerically. Expanding the definition of the core in the all-electron calculations significantly reduces the computational effort and, up to biases of about 2 V, the results are very similar to those obtained using more rigorous approaches. The convergence of the I-V curves and transmission coefficients with respect to basis set is discussed. The addition of diffuse functions is critical in approaching basis set completeness

Analysis of the current-voltage characteristics lineshapes of resonant tunneling diodes

International Nuclear Information System (INIS)

Rivera, P.H.; Schulz, P.A.

1996-01-01

It is discussed the influence of a two dimensional electron gas at the emitter-barrier interface on the current-voltage characteristics of a Ga As-Al Ga As double-barrier quantum well resonant tunneling diode. This effect is characterized by the modification of the space charge distribution along the structure. Within the framework of a self-consistent calculation we analyse the current-voltage characteristics of the tunneling diodes. This analysis permits us to infer different tunneling ways, related to the formation of confined states in the emitter region, and their signatures in the current-voltage characteristics. We show that varying the spacer layer, together with barrier heights, changes drastically the current density-voltage characteristics lineshapes. We compare our results with a variety of current-voltage characteristics lineshapes. We compare our results with a variety of current-voltage characteristics reported in the literature. The general trend of experimental lineshapes can be reproduced and interpreted with our model. The possibility of tunneling paths is predicted for a range that has not yet been explored experimentally. (author). 12 refs., 4 figs

Ultrathin silicon dioxide layers with a low leakage current density formed by chemical oxidation of Si

Science.gov (United States)

Asuha,; Kobayashi, Takuya; Maida, Osamu; Inoue, Morio; Takahashi, Masao; Todokoro, Yoshihiro; Kobayashi, Hikaru

2002-10-01

Chemical oxidation of Si by use of azeotrope of nitric acid and water can form 1.4-nm-thick silicon dioxide layers with a leakage current density as low as those of thermally grown SiO2 layers. The capacitance-voltage (C-V) curves for these ultrathin chemical SiO2 layers have been measured due to the low leakage current density. The leakage current density is further decreased to approx1/5 (cf. 0.4 A/cm2 at the forward gate bias of 1 V) by post-metallization annealing at 200 degC in hydrogen. Photoelectron spectroscopy and C-V measurements show that this decrease results from (i) increase in the energy discontinuity at the Si/SiO2 interface, and (ii) elimination of Si/SiO2 interface states and SiO2 gap states.

Series asymmetric supercapacitors based on free-standing inner-connection electrodes for high energy density and high output voltage

Science.gov (United States)

Tao, Jiayou; Liu, Nishuang; Rao, Jiangyu; Ding, Longwei; Al Bahrani, Majid Raissan; Li, Luying; Su, Jun; Gao, Yihua

2014-11-01

Asymmetric supercapacitors (ASCs) based on free-standing membranes with high energy density and high output voltage are reported. MnO2 nanowire/carbon nanotube (CNT) composites and MoO3 nanobelt/CNT composites are selected as the anode and the cathode materials of the devices, respectively. The ASC has a high volumetric capacitance of 50.2 F cm-3 at a scan rate of 2 mV s-1 and a high operation voltage window of 2.0 V. Especially, after a middle layer with an inner-connection structure was inserted between the anode and the cathode, the output voltage of the whole device can achieve 4.0 V. The full cell of series ASCs (SASC) with an inner-connection middle layer has a high energy density of 28.6 mW h cm-3 at a power density of 261.4 mW cm-3, and exhibits excellent cycling performance of 99.6% capacitance retention over 10 000 cycles. This strategy of designing the hybridized structure for SASCs provides a promising route for next-generation SCs with high energy density and high output voltage.Asymmetric supercapacitors (ASCs) based on free-standing membranes with high energy density and high output voltage are reported. MnO2 nanowire/carbon nanotube (CNT) composites and MoO3 nanobelt/CNT composites are selected as the anode and the cathode materials of the devices, respectively. The ASC has a high volumetric capacitance of 50.2 F cm-3 at a scan rate of 2 mV s-1 and a high operation voltage window of 2.0 V. Especially, after a middle layer with an inner-connection structure was inserted between the anode and the cathode, the output voltage of the whole device can achieve 4.0 V. The full cell of series ASCs (SASC) with an inner-connection middle layer has a high energy density of 28.6 mW h cm-3 at a power density of 261.4 mW cm-3, and exhibits excellent cycling performance of 99.6% capacitance retention over 10 000 cycles. This strategy of designing the hybridized structure for SASCs provides a promising route for next-generation SCs with high energy density and high

Improvement the Capacity of Cockcroft-Walton High Voltage Source from 300 kV/20 mA to 500 kV/20 mA for Accelerating Voltage of Electron Beam Machine

International Nuclear Information System (INIS)

Suprapto; Djasiman

2002-01-01

The improvement capacity of Cockcroft-Walton high voltage source from 300 kV/20 mA to 500 kV/mA has been carrying out. To improve the capacity of high voltage source was done by means of increasing the stage number of voltage multiplier from 11 to 18 and its output voltage measuring resistance. Each stage of voltage multiplier consists of 2 capacitors and 2 circuits of high voltage diode. This voltage multiplier is constructed using main components of high voltage capacitor and high voltage diode each of 0.22 μF/50 kV and UF 5408 respectively. To avoid stray discharge and corona it was provided with high voltage electrode and corona ring. The test result indicated that the output voltage obtained from 16 stages was 350 kV according to operating condition of 25 MΩ resistive load and first stage voltage of 28.5 kV with oscillator frequency of 24 Hz. That condition requires anode voltage and current of 5.5 kV and 2.5 A respectively. The no load test for 16 stages indicates 400 kV of output voltage and 28.5 kV first stage voltage. Efficiency of high voltage source was 48 % at 6.75 kW of output power. The expected test of 500 kV with 18 stages of voltage multiplier can not be carried out because of some restrictive of loading system. From the test result can be predicted that the output voltage of 500 kV with 18 stages of voltage multiplier requires 31.2 kV of first stage voltage. Then the expected high voltage source of Cockcroft-Walton is capable as accelerating voltage source for Electron Beam Machine with energy of 500 kV. (author)

Dynamic voltage-current characteristics for a water jet plasma arc

International Nuclear Information System (INIS)

Yang Jiaxiang; Lan Sheng; Xu Zuoming

2008-01-01

A virtual instrument technology is used to measure arc current, arc voltage, dynamic V-I characteristics, and nonlinear conductance for a cone-shaped water jet plasma arc under ac voltage. Experimental results show that ac arc discharge mainly happens in water vapor evaporated from water when heated. However, due to water's cooling effect and its conductance, arc conductance, reignition voltage, extinguish voltage, and current zero time are very different from those for ac arc discharge in gas work fluid. These can be valuable to further studies on mechanism and characteristics of plasma ac discharge in water, and even in gas work fluid

High power thyristors with 5 kV blocking voltage. Volume 1: Development of high-voltage-thyristors (4.5 kV) with good dynamic properties

Science.gov (United States)

Lock, K.; Patalong, H.; Platzoeder, K.

1979-01-01

Using neutron irradiated silicon with considerably lower spread in resistivity as compared to conventionally doped silicon it was possible to produce power thyristors with breakdown voltages between 3.5 kV and 5.5 kV. The thyristor pellets have a diameter of 50 mm. Maximum average on-state currents of 600 to 800 A can be reached with these elements. The dynamic properties of the thryistors could be improved to allow standard applications up to maximum repetitive voltages of 4.5 kV.

PV source based high voltage gain current fed converter

Science.gov (United States)

Saha, Soumya; Poddar, Sahityika; Chimonyo, Kudzai B.; Arunkumar, G.; Elangovan, D.

2017-11-01

This work involves designing and simulation of a PV source based high voltage gain, current fed converter. It deals with an isolated DC-DC converter which utilizes boost converter topology. The proposed converter is capable of high voltage gain and above all have very high efficiency levels as proved by the simulation results. The project intends to produce an output of 800 V dc from a 48 V dc input. The simulation results obtained from PSIM application interface were used to analyze the performance of the proposed converter. Transformer used in the circuit steps up the voltage as well as to provide electrical isolation between the low voltage and high voltage side. Since the converter involves high switching frequency of 100 kHz, ultrafast recovery diodes are employed in the circuitry. The major application of the project is for future modeling of solar powered electric hybrid cars.

Voltage-regulating constant-current sources in a linear induction accelerator

International Nuclear Information System (INIS)

Zhao Juan; Cao Kefeng; Deng Jianjun; Zhu Lijun; Yang Jia; Ye Chao; Huang Bin; Cao Ningxiang; Dong Jinxuan; Zhang Jichang; Yu Zhiguo; Chen Min

2002-01-01

Constant-current Sources are one of key units in a linear induction accelerator. The requirements for the sources are to supply stable direct current of high power for the induction coil, be easy to computer-control and highly stable and reliable. Applying the technique of linear current source regulating in series, the primary voltage of the power transformer is regulated through an MJYS-JL-350A type three-phase alterative voltage-regulating module. The output current variation is 300-500 A when the load variation is 0.06-0.1 Ω and the voltage drop of the regulator tube is controlled within 8 V±2V when the variation of mains voltage is in ±10%. Both the current ripple and stability meet the technical requirements. The constant-current sources are controlled through an industrial controller. For each of the constant-current sources has a smallest system comprised of 8051 which is communication-controlled through a RS-485 interface, the sources can be controlled remotely

Ultra Low Voltage Class AB Switched Current Memory Cells Based on Floating Gate Transistors

DEFF Research Database (Denmark)

Mucha, Igor

1999-01-01

current memory cells were designed using a CMOS process with threshold voltages V-T0n = \\V-T0p\\ = 0.9 V for the n- and p-channel devices. Both hand calculations and PSPICE simulations showed that the designed example switched current memory cell allowed a maximum signal range better than +/-18 mu......A proposal for a class AB switched current memory cell, suitable for ultra-low-voltage applications is presented. The proposal employs transistors with floating gates, allowing to build analog building blocks for ultralow supply voltage operation also in CMOS processes with high threshold voltages....... This paper presents the theoretical basis for the design of "floating-gate'' switched current memory cells by giving a detailed description and analysis of the most important impacts degrading the performance of the cells. To support the theoretical assumptions circuits based on "floating-gate'' switched...

Imaging of current density distributions with a Nb weak-link scanning nano-SQUID microscope

Science.gov (United States)

Shibata, Yusuke; Nomura, Shintaro; Kashiwaya, Hiromi; Kashiwaya, Satoshi; Ishiguro, Ryosuke; Takayanagi, Hideaki

2015-10-01

Superconducting quantum interference devices (SQUIDs) are accepted as one of the highest magnetic field sensitive probes. There are increasing demands to image local magnetic fields to explore spin properties and current density distributions in a two-dimensional layer of semiconductors or superconductors. Nano-SQUIDs have recently attracting much interest for high spatial resolution measurements in nanometer-scale samples. Whereas weak-link Dayem Josephson junction nano-SQUIDs are suitable to miniaturization, hysteresis in current-voltage (I-V) characteristics that is often observed in Dayem Josephson junction is not desirable for a scanning microscope. Here we report on our development of a weak-link nano-SQUIDs scanning microscope with small hysteresis in I-V curve and on reconstructions of two-dimensional current density vector in two-dimensional electron gas from measured magnetic field.

Demonstration of a High Open-Circuit Voltage GaN Betavoltaic Microbattery

International Nuclear Information System (INIS)

Cheng Zai-Jun; San Hai-Sheng; Chen Xu-Yuan; Liu Bo; Feng Zhi-Hong

2011-01-01

A high open-circuit voltage betavoltaic microbattery based on a GaN p-i-n diode is demonstrated. Under the irradiation of a 4×4 mm 2 planar solid 63 Ni source with an activity of 2 mCi, the open-circuit voltage V oc of the fabricated single 2×2mm 2 cell reaches as high as 1.62 V, the short-circuit current density J sc is measured to be 16nA/cm 2 . The microbattery has a fill factor of 55%, and the energy conversion efficiency of beta radiation into electricity reaches to 1.13%. The results suggest that GaN is a highly promising potential candidate for long-life betavoltaic microbatteries used as power supplies for microelectromechanical system devices. (cross-disciplinary physics and related areas of science and technology)

High-Current-Density Thermionic Cathodes and the Generation of High-Voltage Electron Beams

Science.gov (United States)

1989-04-30

Cathode Temperature =1700 OC Figure 37: Peak gun voltage = 90 kV -57- 60- 0 EGUN 327 ~40 0S 20’ Vacuum 5 .2 x 10 Tor 0 o 0 15202 30 Time (jis...by modeling the filament as a thin disk. The shape of the H - V -, 2 actual filament is sketched in Fig. 2. The EGUN code 1 131 is used to calculate

Small-sized accelerating tube for electron acceleration to 500 keV at pulse duration of 2 ns

International Nuclear Information System (INIS)

Pavlovskaya, N.G.; Ehl'yash, S.L.; Dron', N.A.; Sloeva, G.N.

1978-01-01

The design and characteristics (current, voltage, current density, electron beam structure, energy spectrum, and dose rate) of a soldered small-size two-electrode 600 kV accelerating tube are considered. A six-stage Arkadiev-Marx generator is the pulse high-voltage supply of nanosecond duration. When using a cathode (diameter of 8 mm) made of tantalum foil 0.02 mm thick and with interelectrode gap of 10 mm, the amplitude of the electron beam current beyond the beryllium anode equals to 1040 A under maximum voltage of 490 kV, current pulse duration of 2 ns, number of electrons is 10 13 . The increased electron density on the anode in a spot of 4 mm in diameter is observed; the current density in the spot reaches 1 kA/cm 2 . The electron energy in the beam beyond the anode is as much as 0.6-0.8 J per pulse, and the dose rate near the outer surface of the outlet window is 10 14 -10 15 rad/s. The use of an intensifying oil spark gap is shown to increase radiation hardness. The accelerating tube provides more than 10 5 shots in a single-switching mode

Molecular understanding of the open-circuit voltage of polymer: Fullerene solar cells

Energy Technology Data Exchange (ETDEWEB)

Yamamoto, Shunsuke; Orimo, Akiko; Benten, Hiroaki; Ito, Shinzaburo [Department of Polymer Chemistry, Graduate School of Engineering, Kyoto University, Katsura, Nishikyo, Kyoto (Japan); Ohkita, Hideo [Japan Science and Technology Agency (JST), PRESTO, Saitama (Japan); Department of Polymer Chemistry, Graduate School of Engineering, Kyoto University, Katsura, Nishikyo, Kyoto (Japan)

2012-02-15

The origin of open-circuit voltage (V{sub OC}) was studied for polymer solar cells based on a blend of poly(3-hexylthiophene) (P3HT) and seven fullerene derivatives with different LUMO energy levels and side chains. The temperature dependence of J-V characteristics was analyzed by an equivalent circuit model. As a result, V{sub OC} increased with the decrease in the saturation current density J{sub 0} of the device. Furthermore, J{sub 0} was dependent on the activation energy E{sub A} for J{sub 0}, which is related to the HOMO-LUMO energy gap between P3HT and fullerene. Interestingly, the pre-exponential term J{sub 00} for J{sub 0} was larger for pristine fullerenes than for substituted fullerene derivatives, suggesting that the electronic coupling between molecules also has substantial impact on V{sub OC}. This is probably because the recombination is non-diffusion-limited reaction depending on electron transfer at the P3HT/fullerene interface. In summary, the origin of V{sub OC} is ascribed not only to the relative HOMO-LUMO energy gap but also to the electronic couplings between fullerene/fullerene and polymer/fullerene. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Parameter design and performance simulation of a 10 kV voltage compensation type active superconducting fault current limiter

International Nuclear Information System (INIS)

Chen, L.; Tang, Y.J.; Song, M.; Shi, J.; Ren, L.

2013-01-01

Highlights: •For a practical 10 kV system, the 10 kV active SFCL’s basic parameters are designed. •Under different fault conditions, the 10 kV active SFCL’s performances are simulated. •The designed 10 kV active SFCL’s engineering feasibility is discussed preliminarily. -- Abstract: Since the introduction of superconducting fault current limiter (SFCL) into electrical distribution system may be a good choice with economy and practicability, the parameter design and current-limiting characteristics of a 10 kV voltage compensation type active SFCL are studied in this paper. Firstly, the SFCL’s circuit structure and operation principle are presented. Then, taking a practical 10 kV distribution system as its application object, the SFCL’s basic parameters are designed to meet the system requirements. Further, using MATLAB, the detailed current-limiting performances of the 10 kV active SFCL are simulated under different fault conditions. The simulation results show that the active SFCL can deal well with the faults, and the parameter design’s suitability can be testified. At the end, in view of the engineering feasibility of the 10 kV active SFCL, some preliminary discussions are carried out

A micro-power LDO with piecewise voltage foldback current limit protection

International Nuclear Information System (INIS)

Wei Hailong; Liu Youbao; Guo Zhongjie; Liao Xue

2012-01-01

To achieve a constant current limit, low power consumption and high driving capability, a micro-power LDO with a piecewise voltage-foldback current-limit circuit is presented. The current-limit threshold is dynamically adjusted to achieve a maximum driving capability and lower quiescent current of only 300 nA. To increase the loop stability of the proposed LDO, a high impedance transconductance buffer under a micro quiescent current is designed for splitting the pole that exists at the gate of the pass transistor to the dominant pole, and a zero is designed for the purpose of the second pole phase compensation. The proposed LDO is fabricated in a BiCMOS process. The measurement results show that the short-circuit current of the LDO is 190 mA, the constant limit current under a high drop-out voltage is 440 mA, and the maximum load current under a low drop-out voltage is up to 800 mA. In addition, the quiescent current of the LDO is only 7 μA, the load regulation is about 0.56% on full scale, the line regulation is about 0.012%/V, the PSRR at 120 Hz is 58 dB and the drop-out voltage is only 70 mV when the load current is 250 mA. (semiconductor integrated circuits)

Current integrator using the voltage to frequency converter

International Nuclear Information System (INIS)

Ukai, K.; Gomi, K.

1975-01-01

A current integrator using the Voltage to Frequency Converter has been constructed to measure the beam intensity of the 1.3 GeV Electron Synchrotron at the INS. This integrator ranges the current 10 -7 to 10 -11 amperes and has been calibrated by the extracted electron beam and constant current sources. The accuracy of this integrator agrees with the previous integrator within 1%. (auth.)

An innovative high-power constant-current pulsed-arc power-supply for a high-density pulsed-arc-plasma ion-source using a LaB6-filament.

Science.gov (United States)

Ueno, A; Oguri, H; Ikegami, K; Namekawa, Y; Ohkoshi, K; Tokuchi, A

2010-02-01

An innovative high-power constant-current (CC) pulsed-arc (PA) power-supply (PS) indispensable for a high-density PA plasma ion-source using a lanthanum hexaboride (LaB(6)) filament was devised by combining a constant-voltage (CV) PA-PS, which is composed of an insulated gate bipolar transistor (IGBT) switch, a CV direct-current (dc) PS and a 270 mF capacitor with a CC-PA-PS, which is composed of an IGBT-switch, a CC-dc-PS and a 400 microH inductor, through the inductor. The hybrid-CC-PA-PS succeeded in producing a flat arc-pulse with a peak power of 56 kW (400 A x 140 V) and a duty factor of more than 1.5% (600 micros x 25 Hz) for Japan Proton Accelerator Research Complex (J-PARC) H(-) ion-source stably. It also succeeded in shortening the 99% rising-time of the arc-pulse-current to about 20 micros and tilting up or down the arc-pulse-current arbitrarily and almost linearly by changing the setting voltage of its CV-dc-PS.

An innovative high-power constant-current pulsed-arc power-supply for a high-density pulsed-arc-plasma ion-source using a LaB6-filament

International Nuclear Information System (INIS)

Ueno, A.; Oguri, H.; Ikegami, K.; Namekawa, Y.; Ohkoshi, K.; Tokuchi, A.

2010-01-01

An innovative high-power constant-current (CC) pulsed-arc (PA) power-supply (PS) indispensable for a high-density PA plasma ion-source using a lanthanum hexaboride (LaB 6 ) filament was devised by combining a constant-voltage (CV) PA-PS, which is composed of an insulated gate bipolar transistor (IGBT) switch, a CV direct-current (dc) PS and a 270 mF capacitor with a CC-PA-PS, which is composed of an IGBT-switch, a CC-dc-PS and a 400 μH inductor, through the inductor. The hybrid-CC-PA-PS succeeded in producing a flat arc-pulse with a peak power of 56 kW (400 Ax140 V) and a duty factor of more than 1.5%(600 μsx25 Hz) for Japan Proton Accelerator Research Complex (J-PARC) H - ion-source stably. It also succeeded in shortening the 99% rising-time of the arc-pulse-current to about 20 μs and tilting up or down the arc-pulse-current arbitrarily and almost linearly by changing the setting voltage of its CV-dc-PS.

Rational Design of High-Performance Wide-Bandgap (≈2 eV) Polymer Semiconductors as Electron Donors in Organic Photovoltaics Exhibiting High Open Circuit Voltages (≈1 V).

Science.gov (United States)

Chochos, Christos L; Katsouras, Athanasios; Gasparini, Nicola; Koulogiannis, Chrysanthos; Ameri, Tayebeh; Brabec, Christoph J; Avgeropoulos, Apostolos

2017-01-01

Systematic optimization of the chemical structure of wide-bandgap (≈2.0 eV) "donor-acceptor" copolymers consisting of indacenodithiophene or indacenodithieno[3,2-b]thiophene as the electron-rich unit and thieno[3,4-c]pyrrole-4,6-dione as the electron-deficient moiety in terms of alkyl side chain engineering and distance of the electron-rich and electron-deficient monomers within the repeat unit of the polymer chain results in high-performance electron donor materials for organic photovoltaics. Specifically, preliminary results demonstrate extremely high open circuit voltages (V oc s) of ≈1.0 V, reasonable short circuit current density (J sc ) of around 11 mA cm -2 , and moderate fill factors resulting in efficiencies close to 6%. All the devices are fabricated in an inverted architecture with the photoactive layer processed by doctor blade equipment, showing the compatibility with roll-to-roll large-scale manufacturing processes. From the correlation of the chemical structure-optoelectronic properties-photovoltaic performance, a rational guide toward further optimization of the chemical structure in this family of copolymers, has been achieved. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Current-voltage characteristics of carbon nanotubes with substitutional nitrogen

DEFF Research Database (Denmark)

Kaun, C.C.; Larade, B.; Mehrez, H.

2002-01-01

unit cell generates a metallic transport behavior. Nonlinear I-V characteristics set in at high bias and a negative differential resistance region is observed for the doped tubes. These behaviors can be well understood from the alignment/mis-alignment of the current carrying bands in the nanotube leads......We report ab initio analysis of current-voltage (I-V) characteristics of carbon nanotubes with nitrogen substitution doping. For zigzag semiconducting tubes, doping with a single N impurity increases current flow and, for small radii tubes, narrows the current gap. Doping a N impurity per nanotube...

Enhanced voltage-controlled magnetic anisotropy in magnetic tunnel junctions with an MgO/PZT/MgO tunnel barrier

Science.gov (United States)

Chien, Diana; Li, Xiang; Wong, Kin; Zurbuchen, Mark A.; Robbennolt, Shauna; Yu, Guoqiang; Tolbert, Sarah; Kioussis, Nicholas; Khalili Amiri, Pedram; Wang, Kang L.; Chang, Jane P.

2016-03-01

Compared with current-controlled magnetization switching in a perpendicular magnetic tunnel junction (MTJ), electric field- or voltage-induced magnetization switching reduces the writing energy of the memory cell, which also results in increased memory density. In this work, an ultra-thin PZT film with high dielectric constant was integrated into the tunneling oxide layer to enhance the voltage-controlled magnetic anisotropy (VCMA) effect. The growth of MTJ stacks with an MgO/PZT/MgO tunnel barrier was performed using a combination of sputtering and atomic layer deposition techniques. The fabricated MTJs with the MgO/PZT/MgO barrier demonstrate a VCMA coefficient, which is ˜40% higher (19.8 ± 1.3 fJ/V m) than the control sample MTJs with an MgO barrier (14.3 ± 2.7 fJ/V m). The MTJs with the MgO/PZT/MgO barrier also possess a sizeable tunneling magnetoresistance (TMR) of more than 50% at room temperature, comparable to the control MTJs with an MgO barrier. The TMR and enhanced VCMA effect demonstrated simultaneously in this work make the MgO/PZT/MgO barrier-based MTJs potential candidates for future voltage-controlled, ultralow-power, and high-density magnetic random access memory devices.

Current voltage perspective of an organic electronic device

Science.gov (United States)

Mukherjee, Ayash K.; Kumari, Nikita

2018-05-01

Nonlinearity in current (I) - voltage (V) measurement is a well-known attribute of two-terminal organic device, irrespective of the geometrical or structural arrangement of the device. Most of the existing theories that are developed for interpretation of I-V data, either focus current-voltage relationship of charge injection mechanism across the electrode-organic material interface or charge transport mechanism through the organic active material. On the contrary, both the mechanisms work in tandem charge conduction through the device. The transport mechanism is further complicated by incoherent scattering from scattering centres/charge traps that are located at the electrode-organic material interface and in the bulk of organic material. In the present communication, a collective expression has been formulated that comprises of all the transport mechanisms that are occurring at various locations of a planar organic device. The model has been fitted to experimental I-V data of Au/P3HT/Au device with excellent degree of agreement. Certain physical parameters such as the effective area of cross-section and resistance due to charge traps have been extracted from the fit.

Development and Application of a Wireless Sensor for Space Charge Density Measurement in an Ultra-High-Voltage, Direct-Current Environment.

Science.gov (United States)

Xin, Encheng; Ju, Yong; Yuan, Haiwen

2016-10-20

A space charge density wireless measurement system based on the idea of distributed measurement is proposed for collecting and monitoring the space charge density in an ultra-high-voltage direct-current (UHVDC) environment. The proposed system architecture is composed of a number of wireless nodes connected with space charge density sensors and a base station. The space charge density sensor based on atmospheric ion counter method is elaborated and developed, and the ARM microprocessor and Zigbee radio frequency module are applied. The wireless network communication quality and the relationship between energy consumption and transmission distance in the complicated electromagnetic environment is tested. Based on the experimental results, the proposed measurement system demonstrates that it can adapt to the complex electromagnetic environment under the UHVDC transmission lines and can accurately measure the space charge density.

Mathematical model of voltage-current characteristics of Bi(2223)/Ag magnets under an external magnetic field

CERN Document Server

Pitel, J; Lehtonen, J; Kovács, P

2002-01-01

We have developed a mathematical model, which enables us to predict the voltage-current V(I) characteristics of a solenoidal high-temperature superconductor (HTS) magnet subjected to an external magnetic field parallel to the magnet axis. The model takes into account the anisotropy in the critical current-magnetic field (I sub c (B)) characteristic and the n-value of Bi(2223)Ag multifilamentary tape at 20 K. From the power law between the electric field and the ratio of the operating and critical currents, the voltage on the magnet terminals is calculated by integrating the contributions of individual turns. The critical current of each turn, at given values of operating current and external magnetic field, is obtained by simple linear interpolation between the two suitable points of the I sub c (B) characteristic, which corresponds to the angle alpha between the vector of the resulting magnetic flux density and the broad tape face. In fact, the model is valid for any value and orientation of external magneti...

Field, temperature, and angle dependent critical current density J{sub c}(H,T,{theta}) in coated conductors obtained via contact-free methods

Energy Technology Data Exchange (ETDEWEB)

Thompson, J R; Christen, D K; Zhang Yifei; Zuev, Y L; Cantoni, C [Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831-6092 (United States); Sinclair, J W [Department of Physics, University of Tennessee, Knoxville, TN 37996-1200 (United States); Chen Yimin; Selvamanickam, V [SuperPower, Incorporated, 450 Duane Avenue, Schenectady, NY 12304 (United States)

2010-01-15

Applications of coated conductors based on high- T{sub c} superconductors often require detailed knowledge of their critical current density J{sub c} as a function of magnetic field orientation as well as field strength and temperature. This work demonstrates experimental methods for obtaining the angularly dependent J{sub c} using contact-free magnetic measurements, and qualifies those methods using several well defined conditions. The studies complement traditional transport techniques and are readily extended to conditions of field and temperature where the current density is very large and transport methods become difficult. Results on representative materials are presented.

High Voltage Coil Current Sensor for DC-DC Converters Employing DDCC

Directory of Open Access Journals (Sweden)

M. Drinovsky

2015-12-01

Full Text Available Current sensor is an integral part of every switching converter. It is used for over-current protection, regulation and in case of multiphase converters for balancing. A new high voltage current sensor for coil-based current sensing in DC-DC converters is presented. The sensor employs DDCC with high voltage input stage and gain trimming. The circuit has been simulated and implemented in 0.35 um BCD technology as part of a multiphase DC-DC converter where its function has been verified. The circuit is able to sustain common mode voltage on the input up to 40 V, it occupies 0.387*0.345 mm2 and consumes 3.2 mW typically.

Comment on 'Temperature dependence of the current-voltage characteristics of Sn/PANI/p-Si/Al heterojunctions'

Energy Technology Data Exchange (ETDEWEB)

Pipinys, P; Rimeika, A [Department of Physics, Vilnius Pedagogical University, Studentu 39, LT-08106 Vilnius (Lithuania)], E-mail: ftfdekanas@vpu.lt

2008-02-27

Current-voltage characteristics of Sn/PANI/p-Si/Al heterojunctions, measured in the temperature range 140-280 K by Kaya et al (2007 J. Phys.: Condens. Matter 19 406205), are reinterpreted in the framework of phonon-assisted tunnelling theory, as a free-charge-carrier generation mechanism in the strong electrical field. It is shown that phonon-assisted tunnelling more adequately describes the peculiarities of the variation of I-V data with temperature in PANI polymers. (comment)

Photovoltaic Small Molecules of TPA(FxBT-T-Cz)3: Tuning Open-Circuit Voltage over 1.0 V for Their Organic Solar Cells by Increasing Fluorine Substitution.

Science.gov (United States)

Wang, Qiong; Duan, Linrui; Tao, Qiang; Peng, Wenhong; Chen, Jianhua; Tan, Hua; Yang, Renqiang; Zhu, Weiguo

2016-11-09

To simultaneously improve both open-circuit voltage (V oc ) and short-circuit current density (J sc ) for organic solar cells, a novel D(A-π-Ar) 3 type of photovoltaic small molecules of TPA(F x BT-T-3Cz) 3 was designed and synthesized, which contain central triphenylamine (TPA), terminal carbazole (Cz), armed fluorine-substituted benzothiadiazole (F x BT, where x = 1 or 2), and bridged thiophene (T) units. A narrowed ultraviolet-visible absorption and a decreasing highest occupied molecular orbital energy level were observed from TPA(F 1 BT-T-3Cz) 3 to TPA(F 2 BT-T-3Cz) 3 with increasing fluorine substitution. However, the TPA(F 2 BT-T-3Cz) 3 /PC 71 BM-based solar devices showed a rising V oc of 1.01 V and an enhanced J sc of 10.84 mA cm -2 as well as a comparable power conversion efficiency of 4.81% in comparison to the TPA(F 1 BT-T-3Cz) 3 /PC 71 BM-based devices. Furthermore, in comparison to the parent TPA(BT-T-3Cz) 3 molecule without fluorine substitution, the fluorine-substituted TPA(F x BT-T-3Cz) 3 molecules exhibited significantly incremental V oc and J sc values in their bulk heterojunction organic solar cells, owing to fluorine incorporation in the electron-deficient benzothiadiazole unit.

Electronic Current Transducer (ECT) for high voltage dc lines

Science.gov (United States)

Houston, J. M.; Peters, P. H., Jr.; Summerayes, H. R., Jr.; Carlson, G. J.; Itani, A. M.

1980-02-01

The development of a bipolar electronic current transducer (ECT) for measuring the current in a high voltage dc (HVDC) power line at line potential is discussed. The design and construction of a free standing ECT for use on a 400 kV line having a nominal line current of 2000 A is described. Line current is measured by a 0.0001 ohm shunt whose voltage output is sampled by a 14 bit digital data link. The high voltage interface between line and ground is traversed by optical fibers which carry digital light signals as far as 300 m to a control room where the digital signal is converted back to an analog representation of the shunt voltage. Two redundant electronic and optical data links are used in the prototype. Power to operate digital and optical electronics and temperature controlling heaters at the line is supplied by a resistively and capacitively graded 10 stage cascade of ferrite core transformers located inside the hollow, SF6 filled, porcelain support insulator. The cascade is driven by a silicon controlled rectifier inverter which supplies about 100 W of power at 30 kHz.

Radiation effects on the current-voltage and capacitance-voltage characteristics of advanced p-n junction diodes surrounded by shallow trench isolation

International Nuclear Information System (INIS)

Poyai, A.; Simoen, E.; Claeys, C.; Hayama, K.; Kobayashi, K.; Ohyama, H.

2002-01-01

This paper investigates the impact of 20 MeV proton irradiation on the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of different geometry n + -p-well junction diodes surrounded by shallow trench isolation and processed in a 0.18 μm CMOS technology. From I-V characteristics, a higher current damage coefficient was found for the bulk than for the peripheral component. The radiation-induced boron de-activation resulted in a lowering of the p-well doping, which has been derived from high-frequency C-V measurements. This was confirmed by deep level transient spectroscopy (DLTS) analysis, revealing the presence of interstitial boron related radiation defects. As will be demonstrated for the bulk leakage-current damage coefficient, the electric field enhanced generation rate of charge carriers and the radiation-induced boron de-activation should be accounted for properly

250 kV 6 mA compact Cockcroft-Walton high-voltage power supply

Energy Technology Data Exchange (ETDEWEB)

Ma, Zhan-Wen; Su, Xiao-Dong; Wei, Zhen; Huang, Zhi-Wu; Miao, Tian-You; Su, Tong-Ling [School of Nuclear Science and Technology, Lanzhou University, Lanzhou 730000 (China); Lu, Xiao-Long; Wang, Jun-Run; Yao, Ze-En, E-mail: zeyao@lzu.edu.cn [School of Nuclear Science and Technology, Lanzhou University, Lanzhou 730000 (China); Engineering Research Center for Neutron Application, Ministry of Education, Lanzhou University, Lanzhou 730000 (China)

2016-08-15

A compact power supply system for a compact neutron generator has been developed. A 4-stage symmetrical Cockcroft-Walton circuit is adopted to produce 250 kV direct current high-voltage. A 2-stage 280 kV isolation transformer system is used to drive the ion source power supply. For a compact structure, safety, and reliability during the operation, the Cockcroft-Walton circuit and the isolation transformer system are enclosed in an epoxy vessel containing the transformer oil whose size is about ∅350 mm × 766 mm. Test results indicate that the maximum output voltage of the power supply is 282 kV, and the stability of the output voltage is better than 0.63% when the high voltage power supply is operated at 250 kV, 6.9 mA with the input voltage varying ±10%.

Low-cost wireless voltage & current grid monitoring

Energy Technology Data Exchange (ETDEWEB)

Hines, Jacqueline [SenSanna Inc., Arnold, MD (United States)

2016-12-31

This report describes the development and demonstration of a novel low-cost wireless power distribution line monitoring system. This system measures voltage, current, and relative phase on power lines of up to 35 kV-class. The line units operate without any batteries, and without harvesting energy from the power line. Thus, data on grid condition is provided even in outage conditions, when line current is zero. This enhances worker safety by detecting the presence of voltage and current that may appear from stray sources on nominally isolated lines. Availability of low-cost power line monitoring systems will enable widespread monitoring of the distribution grid. Real-time data on local grid operating conditions will enable grid operators to optimize grid operation, implement grid automation, and understand the impact of solar and other distributed sources on grid stability. The latter will enable utilities to implement eneygy storage and control systems to enable greater penetration of solar into the grid.

Threshold-voltage modulated phase change heterojunction for application of high density memory

International Nuclear Information System (INIS)

Yan, Baihan; Tong, Hao; Qian, Hang; Miao, Xiangshui

2015-01-01

Phase change random access memory is one of the most important candidates for the next generation non-volatile memory technology. However, the ability to reduce its memory size is compromised by the fundamental limitations inherent in the CMOS technology. While 0T1R configuration without any additional access transistor shows great advantages in improving the storage density, the leakage current and small operation window limit its application in large-scale arrays. In this work, phase change heterojunction based on GeTe and n-Si is fabricated to address those problems. The relationship between threshold voltage and doping concentration is investigated, and energy band diagrams and X-ray photoelectron spectroscopy measurements are provided to explain the results. The threshold voltage is modulated to provide a large operational window based on this relationship. The switching performance of the heterojunction is also tested, showing a good reverse characteristic, which could effectively decrease the leakage current. Furthermore, a reliable read-write-erase function is achieved during the tests. Phase change heterojunction is proposed for high-density memory, showing some notable advantages, such as modulated threshold voltage, large operational window, and low leakage current

Threshold-voltage modulated phase change heterojunction for application of high density memory

Science.gov (United States)

Yan, Baihan; Tong, Hao; Qian, Hang; Miao, Xiangshui

2015-09-01

Phase change random access memory is one of the most important candidates for the next generation non-volatile memory technology. However, the ability to reduce its memory size is compromised by the fundamental limitations inherent in the CMOS technology. While 0T1R configuration without any additional access transistor shows great advantages in improving the storage density, the leakage current and small operation window limit its application in large-scale arrays. In this work, phase change heterojunction based on GeTe and n-Si is fabricated to address those problems. The relationship between threshold voltage and doping concentration is investigated, and energy band diagrams and X-ray photoelectron spectroscopy measurements are provided to explain the results. The threshold voltage is modulated to provide a large operational window based on this relationship. The switching performance of the heterojunction is also tested, showing a good reverse characteristic, which could effectively decrease the leakage current. Furthermore, a reliable read-write-erase function is achieved during the tests. Phase change heterojunction is proposed for high-density memory, showing some notable advantages, such as modulated threshold voltage, large operational window, and low leakage current.

CURRENT-VOLTAGE CURVES FOR TREATING EFFLUENT CONTAINING HEDP: DETERMINATION OF THE LIMITING CURRENT

Directory of Open Access Journals (Sweden)

T. Scarazzato

2015-12-01

Full Text Available Abstract Membrane separation techniques have been explored for treating industrial effluents to allow water reuse and component recovery. In an electrodialysis system, concentration polarization causes undesirable alterations in the ionic transportation mechanism. The graphic construction of the current voltage curve is proposed for establishing the value of the limiting current density applied to the cell. The aim of this work was to determine the limiting current density in an electrodialysis bench stack, the function of which was the treatment of an electroplating effluent containing HEDP. For this, a system with five compartments was used with a working solution simulating the rinse waters of HEDP-based baths. The results demonstrated correlation between the regions defined by theory and the experimental data.

Non-contact current and voltage sensor

Science.gov (United States)

Carpenter, Gary D; El-Essawy, Wael; Ferreira, Alexandre Peixoto; Keller, Thomas Walter; Rubio, Juan C; Schappert, Michael A

2014-03-25

A detachable current and voltage sensor provides an isolated and convenient device to measure current passing through a conductor such as an AC branch circuit wire, as well as providing an indication of an electrostatic potential on the wire, which can be used to indicate the phase of the voltage on the wire, and optionally a magnitude of the voltage. The device includes a housing that contains the current and voltage sensors, which may be a ferrite cylinder with a hall effect sensor disposed in a gap along the circumference to measure current, or alternative a winding provided through the cylinder along its axis and a capacitive plate or wire disposed adjacent to, or within, the ferrite cylinder to provide the indication of the voltage.

A novel NaV1.5 voltage sensor mutation associated with severe atrial and ventricular arrhythmias.

Science.gov (United States)

Wang, Hong-Gang; Zhu, Wandi; Kanter, Ronald J; Silva, Jonathan R; Honeywell, Christina; Gow, Robert M; Pitt, Geoffrey S

2016-03-01

Inherited autosomal dominant mutations in cardiac sodium channels (NaV1.5) cause various arrhythmias, such as long QT syndrome and Brugada syndrome. Although dozens of mutations throughout the protein have been reported, there are few reported mutations within a voltage sensor S4 transmembrane segment and few that are homozygous. Here we report analysis of a novel lidocaine-sensitive recessive mutation, p.R1309H, in the NaV1.5 DIII/S4 voltage sensor in a patient with a complex arrhythmia syndrome. We expressed the wild type or mutant NaV1.5 heterologously for analysis with the patch-clamp and voltage clamp fluorometry (VCF) techniques. p.R1309H depolarized the voltage-dependence of activation, hyperpolarized the voltage-dependence of inactivation, and slowed recovery from inactivation, thereby reducing the channel availability at physiologic membrane potentials. Additionally, p.R1309H increased the "late" Na(+) current. The location of the mutation in DIIIS4 prompted testing for a gating pore current. We observed an inward current at hyperpolarizing voltages that likely exacerbates the loss-of-function defects at resting membrane potentials. Lidocaine reduced the gating pore current. The p.R1309H homozygous NaV1.5 mutation conferred both gain-of-function and loss-of-function effects on NaV1.5 channel activity. Reduction of a mutation-induced gating pore current by lidocaine suggested a therapeutic mechanism. Copyright © 2016 Elsevier Ltd. All rights reserved.

Effect of trapped electrons on the transient current density and luminance of organic light-emitting diode

Science.gov (United States)

Lee, Jiun-Haw; Chen, Chia-Hsun; Lin, Bo-Yen; Shih, Yen-Chen; Lin, King-Fu; Wang, Leeyih; Chiu, Tien-Lung; Lin, Chi-Feng

2018-04-01

Transient current density and luminance from an organic light-emitting diode (OLED) driven by voltage pulses were investigated. Waveforms with different repetition rate, duty cycle, off-period, and on-period were used to study the injection and transport characteristics of electron and holes in an OLED under pulse operation. It was found that trapped electrons inside the emitting layer (EML) and the electron transporting layer (ETL) material, tris(8-hydroxyquinolate)aluminum (Alq3) helped for attracting the holes into the EML/ETL and reducing the driving voltage, which was further confirmed from the analysis of capacitance-voltage and displacement current measurement. The relaxation time and trapped filling time of the trapped electrons in Alq3 layer were ~200 µs and ~600 µs with 6 V pulse operation, respectively.

A Four-Phase High Voltage Conversion Ratio Bidirectional DC-DC Converter for Battery Applications

Directory of Open Access Journals (Sweden)

Li-Kun Xue

2015-06-01

Full Text Available This study presents a four-phase interleaved high voltage conversion ratio bidirectional DC-DC converter circuit based on coupled inductors and switched capacitors, which can eliminate the defects of conventional high voltage conversion ratio bidirectional DC-DC converters in terms of high-voltage/current stress, less efficiency and low-power limitation. Parallel channels are used to reduce current stress at the low-voltage side and series connected switched capacitors are used to enlarge voltage conversion ratio, reduce voltage stress and achieve auto current sharing. This paper proposes the operation principle, feature analysis and optimization design considerations. On this basis the objectives of high voltage conversion ratio, low voltage/current stress, high power density, high efficiency and high-power applications can be achieved. Some experimental results based on a 500 W prototype converter (24 V to 48 V at low-voltage side, 400 V at high-voltage side are given to verify the theoretical analysis and the effectiveness of the proposed converter.

Compact generator with semiconductor current interrupter, voltage to 300 kV and pulse repetition rate to 2 kHz

International Nuclear Information System (INIS)

Lyubutin, S.K.; Rukin, S.N.; Slovikovskij, B.G.

2000-01-01

Compact generator with a semiconductor current interrupter (SOS-diode), forming on the resistive load pulses with the amplitude up to 300 kV, duration from 30 up to 50 ns and the pulse sequence frequency 300 Hz by long operation and up to 2 kHz in the 30-second packet, is described. The generator contains a thyristor charge unit, magnetic compressor and inductive storage with a semiconductor current interrupter on the SOS-diode basis. The generator mean output capacity by the pulse maximum sequence frequency and 250 kV voltage equals 16 kw. The generator dimensions are 0.85 x 0.65 x 0.42 m, its mass equals approximately 115 kg [ru

Influence of current limitation on voltage stability with voltage sourced converter HVDC

DEFF Research Database (Denmark)

Zeni, Lorenzo; Jóhannsson, Hjörtur; Hansen, Anca Daniela

2013-01-01

A first study of voltage stability with relevant amount of Voltage Sourced Converter based High Voltage Direct Current (VSC-HVDC) transmission is presented, with particular focus on the converters’ behaviour when reaching their rated current. The detrimental effect of entering the current...

Effects of load voltage on voltage breakdown modes of electrical exploding aluminum wires in air

Energy Technology Data Exchange (ETDEWEB)

Wu, Jian; Li, Xingwen, E-mail: xwli@mail.xjtu.edu.cn; Yang, Zefeng; Wang, Kun; Chao, Youchuang; Shi, Zongqian; Jia, Shenli; Qiu, Aici [State Key Laboratory of Electrical Insulation and Power Equipment, Xi' an Jiaotong University, Xi' an 710049 (China)

2015-06-15

The effects of the load voltage on the breakdown modes are investigated in exploding aluminum wires driven by a 1 kA, 0.1 kA/ns pulsed current in air. From laser probing images taken by laser shadowgraphy, schlieren imaging, and interferometry, the position of the shockwave front, the plasma channel, and the wire core edge of the exploding product can be determined. The breakdown mode makes a transition from the internal mode, which involves breakdown inside the wire core, to the shunting mode, which involves breakdown in the compressed air, with decreasing charging voltage. The breakdown electrical field for a gaseous aluminum wire core of nearly solid density is estimated to be more than 20 kV/cm, while the value for gaseous aluminum of approximately 0.2% solid density decreases to 15–20 kV/cm. The breakdown field in shunting mode is less than 20 kV/cm and is strongly affected by the vaporized aluminum, the desorbed gas, and the electrons emitted from the wire core during the current pause. Ohmic heating during voltage collapses will induce further energy deposition in the current channel and thus will result in different expansion speeds for both the wire core and the shockwave front in the different modes.

Some considerations on silicone oil in high-current and energy-disconnecting mechanisms

International Nuclear Information System (INIS)

Vogel, H.F.

1984-03-01

Silicone oil is considered inflammable. The dissociation products generated by an electric arc under silicone oil are known to form a highly explosive mixture with air. We calculate the arc energy required for dissociation to be 32 kJ per liter of gas mixture at standard pressure and temperature. We calculate the arc voltage gradient at a pressure of 50 atm and current density of 1 kA/mm 2 to be 0.5 kV/cm, resulting in an arc voltage of several kV, depending on the arc length. In a multikiloampere arc, the resulting arc power is likely to cause a pressure of many atmospheres in a shock wave

Effect of density distribution of cathode emission on the flux character in a strong-current electron gun

International Nuclear Information System (INIS)

Matora, I.M.; Merkulov, L.A.

1975-01-01

The effect is considered of two kinds of a dependence of the emission density from the electric field voltage on the emitter surface of a strong-current electron gun (the Schottky law and the ''3/2'' law) upon the choice of a form for the meridional cross section of this emitter at the condition of electron flux laminarity. A calculation example is given for electron gun with close to laminar flow assuming the validity of the Schottky law. The results of calculation of varying the laminar flux character are given which appears when varying parameters of the gun at the voltage 500 kV and current 250 A

On the current-voltage relationship in fluid theory

Directory of Open Access Journals (Sweden)

P. Janhunen

1999-01-01

Full Text Available The kinetic theory of precipitating electrons with Maxwellian source plasma yields the well-known current-voltage relationship (CV-relationship; Knight formula, which can in most cases be accurately approximated by a reduced linear formula. Our question is whether it is possible to obtain this CV-relationship from fluid theory, and if so, to what extent it is physically equivalent with the more accurate kinetic counterpart. An answer to this question is necessary before trying to understand how one could combine time-dependent and transient phenomena such as Alfvénic waves with a slowly evolving background described by the CV-relationship. We first compute the fluid quantity profiles (density, pressure etc. along a flux tube based on kinetic theory solution. A parallel potential drop accumulates plasma (and pressure below it, which explains why the current is linearly proportional to the potential drop in the kinetic theory even though the velocity of the accelerated particles is only proportional to the square root of the accelerating voltage. Electron fluid theory reveals that the kinetic theory results can be reproduced, except for different numerical constants, if and only if the polytropic index γ is equal to three, corresponding to one-dimensional motion. The convective derivative term v·∇v provides the equivalent of the "mirror force" and is therefore important to include in a fluid theory trying to describe a CV-relationship. In one-fluid equations the parallel electric field, at least in its functional form, emerges self-consistently. We find that the electron density enhancement below the potential drop disappears because the magnetospheric ions would be unable to neutralize it, and a square root CV-relationship results, in disagreement with kinetic theory and observations. Also, the potential drop concentrates just above the ionosphere, which is at odds with observations as well. To resolve this puzzle, we show that considering

On the current-voltage relationship in fluid theory

Directory of Open Access Journals (Sweden)

P. Janhunen

Full Text Available The kinetic theory of precipitating electrons with Maxwellian source plasma yields the well-known current-voltage relationship (CV-relationship; Knight formula, which can in most cases be accurately approximated by a reduced linear formula. Our question is whether it is possible to obtain this CV-relationship from fluid theory, and if so, to what extent it is physically equivalent with the more accurate kinetic counterpart. An answer to this question is necessary before trying to understand how one could combine time-dependent and transient phenomena such as Alfvénic waves with a slowly evolving background described by the CV-relationship. We first compute the fluid quantity profiles (density, pressure etc. along a flux tube based on kinetic theory solution. A parallel potential drop accumulates plasma (and pressure below it, which explains why the current is linearly proportional to the potential drop in the kinetic theory even though the velocity of the accelerated particles is only proportional to the square root of the accelerating voltage. Electron fluid theory reveals that the kinetic theory results can be reproduced, except for different numerical constants, if and only if the polytropic index γ is equal to three, corresponding to one-dimensional motion. The convective derivative term v·∇v provides the equivalent of the "mirror force" and is therefore important to include in a fluid theory trying to describe a CV-relationship. In one-fluid equations the parallel electric field, at least in its functional form, emerges self-consistently. We find that the electron density enhancement below the potential drop disappears because the magnetospheric ions would be unable to neutralize it, and a square root CV-relationship results, in disagreement with kinetic theory and observations. Also, the potential drop concentrates just above the ionosphere, which is at odds with observations as well. To resolve this puzzle, we show that considering

Modelling of current-voltage characteristics of infrared photo-detectors based on type – II InAs/GaSb super-lattice diodes with unipolar blocking layers

Directory of Open Access Journals (Sweden)

Vishnu Gopal

2015-09-01

Full Text Available It is shown that current-voltage characteristics of infrared photo-detectors based on type-II InAs/GaSb super-lattices with uni-polar blocking layers can be modelled similar to a junction diode with a finite series resistance on account of blocking barriers. As an example this paper presents the results of a study of current-voltage characteristics of a type II InAs/GaSb super-lattice diode with PbIbN architecture using a recently proposed [J. Appl. Phys. 116, 084502 (2014] method for modelling of illuminated photovoltaic detectors. The thermal diffusion, generation – recombination (g-r, and ohmic currents are found as principal components besides a component of photocurrent due to background illumination. The experimentally observed reverse bias diode current in excess of thermal current (diffusion + g-r, photo-current and ohmic shunt current is reported to be best described by an exponential function of the type, Iexcess = Ir0 + K1exp(K2 V, where Ir0, K1 and K2 are fitting parameters and V is the applied bias voltage. The present investigations suggest that the exponential growth of excess current with the applied bias voltage may be taking place along the localized regions in the diode. These localized regions are the shunt resistance paths on account of the surface leakage currents and/or defects and dislocations in the base of the diode.

Current-voltage characteristic of parallel-plane ionization chamber with inhomogeneous ionization

International Nuclear Information System (INIS)

Stoyanov, D G

2007-01-01

The balances of particles and charges in the volume of parallel-plane ionization chamber are considered. Differential equations describing the distribution of current densities in the chamber volume are obtained. As a result of the differential equations solution an analytical form of the current-voltage characteristic of parallel-plane ionization chamber with inhomogeneous ionization in the volume is obtained

Current-voltage characteristic of parallel-plane ionization chamber with inhomogeneous ionization

Energy Technology Data Exchange (ETDEWEB)

Stoyanov, D G [Faculty of Engineering and Pedagogy in Sliven, Technical University of Sofia, 59, Bourgasko Shaussee Blvd, 8800 Sliven (Bulgaria)

2007-08-15

The balances of particles and charges in the volume of parallel-plane ionization chamber are considered. Differential equations describing the distribution of current densities in the chamber volume are obtained. As a result of the differential equations solution an analytical form of the current-voltage characteristic of parallel-plane ionization chamber with inhomogeneous ionization in the volume is obtained.

Design & Fabrication of a High-Voltage Photovoltaic Cell

Energy Technology Data Exchange (ETDEWEB)

Felder, Jennifer; /North Carolina State U. /SLAC

2012-09-05

Silicon photovoltaic (PV) cells are alternative energy sources that are important in sustainable power generation. Currently, applications of PV cells are limited by the low output voltage and somewhat low efficiency of such devices. In light of this fact, this project investigates the possibility of fabricating high-voltage PV cells on float-zone silicon wafers having output voltages ranging from 50 V to 2000 V. Three designs with different geometries of diffusion layers were simulated and compared in terms of metal coverage, recombination, built-in potential, and conduction current density. One design was then chosen and optimized to be implemented in the final device design. The results of the simulation serve as a feasibility test for the design concept and provide supportive evidence of the effectiveness of silicon PV cells as high-voltage power supplies.

Offset energies at organic semiconductor heterojunctions and their influence on the open-circuit voltage of thin-film solar cells

Science.gov (United States)

Rand, Barry P.; Burk, Diana P.; Forrest, Stephen R.

2007-03-01

Organic semiconductor heterojunction (HJ) energy level offsets are modeled using a combination of Marcus theory for electron transfer, and generalized Shockley theory of the dark current density vs voltage (J-V) characteristics. This model is used to fit the J-V characteristics of several donor-acceptor combinations commonly used in thin film organic photovoltaic cells. In combination with measurements of the energetics of donor-acceptor junctions, the model predicts tradeoffs between the junction open-circuit voltage (VOC) and short-circuit current density (JSC) . The VOC is found to increase with light intensity and inversely with temperature for 14 donor-acceptor HJ materials pairs. In particular, we find that VOC reaches a maximum at low temperature (˜175K) for many of the heterojunctions studied. The maximum value of VOC is a function of the difference between the donor ionization potential and acceptor electron affinity, minus the binding energy of the dissociated, geminate electron-hole pair: a general relationship that has implications on the charge transfer mechanism at organic heterojunctions. The fundamental understanding provided by this model leads us to infer that the maximum power conversion efficiency of double heterostructure organic photovoltaic cells can be as high as 12%. When combined with mixed layers to increase photocurrent and stacked cells to increase VOC , efficiencies approaching 16% are within reach.

High Voltage GaN Schottky Rectifiers

Energy Technology Data Exchange (ETDEWEB)

CAO,X.A.; CHO,H.; CHU,S.N.G.; CHUO,C.-C.; CHYI,J.-I.; DANG,G.T.; HAN,JUNG; LEE,C.-M.; PEARTON,S.J.; REN,F.; WILSON,R.G.; ZHANG,A.P.

1999-10-25

Mesa and planar GaN Schottky diode rectifiers with reverse breakdown voltages (V{sub RB}) up to 550V and >2000V, respectively, have been fabricated. The on-state resistance, R{sub ON}, was 6m{Omega}{center_dot} cm{sup 2} and 0.8{Omega}cm{sup 2}, respectively, producing figure-of-merit values for (V{sub RB}){sup 2}/R{sub ON} in the range 5-48 MW{center_dot}cm{sup -2}. At low biases the reverse leakage current was proportional to the size of the rectifying contact perimeter, while at high biases the current was proportional to the area of this contact. These results suggest that at low reverse biases, the leakage is dominated by the surface component, while at higher biases the bulk component dominates. On-state voltages were 3.5V for the 550V diodes and {ge}15 for the 2kV diodes. Reverse recovery times were <0.2{micro}sec for devices switched from a forward current density of {approx}500A{center_dot}cm{sup -2} to a reverse bias of 100V.

Charge transport through conducting organic poly(2-methoxy-5- (2-ethylhexyloxy)-1, 4-phenylenevinylene)

International Nuclear Information System (INIS)

Kumar, Pankaj; Misra, Aparna; Kamalasanan, M N; Jain, S C; Kumar, Vikram

2007-01-01

Current-voltage (J-V) characteristics of poly(2-methoxy-5- (2-ethyhexyloxy)-1, 4-phenylenevinylene)(MEH-PPV) have been studied in the hole-only devices ITO/PEDOT : PSS/MEH-PPV/Au, as a function of temperature from 300 to 98 K. Hole conduction in MEH-PPV has been well explained by an exponential trap-controlled drift model. In a considerable range of applied voltages, current obeys the power law J ∼ V l+1 , where l = T c /T and T c is the characteristic temperature of the exponential trap distribution. Assuming the effective density of states N ν = 2.7 x 10 18 cm -3 , the holes trap density (H b ) and characteristic temperature (T c ) have been calculated to be 1 x 10 18 cm -3 and 550 K, respectively. As the voltage further increases current deviates and becomes smaller than J ∼ V l+1 . At low temperatures and sufficiently high-applied voltages, current follows the V 2 law. At higher temperatures slopes less than 2 of the log J-log V plots have been observed. The possible reasons for this behaviour are mentioned

A 5 V-to-3.3 V CMOS Linear Regulator with Three-Output Temperature-Independent Reference Voltages

Directory of Open Access Journals (Sweden)

San-Fu Wang

2016-01-01

Full Text Available This paper presents a 5 V-to-3.3 V linear regulator circuit, which uses 3.3 V CMOS transistors to replace the 5 V CMOS transistors. Thus, the complexity of the manufacturing semiconductor process can be improved. The proposed linear regulator is implemented by cascode architecture, which requires three different reference voltages as the bias voltages of its circuit. Thus, the three-output temperature-independent reference voltage circuit is proposed, which provides three accurate reference voltages simultaneously. The three-output temperature-independent reference voltages also can be used in other circuits of the chip. By using the proposed temperature-independent reference voltages, the proposed linear regulator can provide an accurate output voltage, and it is suitable for low cost, small size, and highly integrated system-on-chip (SoC applications. Moreover, the proposed linear regulator uses the cascode technique, which improves both the gain performance and the isolation performance. Therefore, the proposed linear regulator has a good performance in reference voltage to output voltage isolation. The voltage variation of the linear regulator is less than 2.153% in the temperature range of −40°C–120°C, and the power supply rejection ratio (PSRR is less than −42.8 dB at 60 Hz. The regulator can support 0~200 mA output current. The core area is less than 0.16 mm2.

High-voltage direct-current circuit breakers

International Nuclear Information System (INIS)

Yoshioka, Y.; Hirasawa, K.

1991-01-01

This paper reports that in 1954 the first high-voltage direct-current (HVDC) transmission system was put into operation between Gotland and the mainland of Sweden. Its system voltage and capacity were 100 kV and 20 MW, respectively. Since then many HVDC transmission systems have been planned, constructed, or commissioned in more than 30 places worldwide, and their total capacity is close to 40 GW. Most systems commissioned to date are two-terminal schemes, and HVDC breakers are not yet used in the high-potential main circuit of those systems, because the system is expected to perform well using only converter/inverter control even at a fault stage of the transmission line. However, even in a two-terminal scheme there are not a few merits in using an HVDC breaker when the system has two parallel transmission lines, that is, when it is a double-circuit system

Capacitor Property and Leakage Current Mechanism of ZrO2 Thin Dielectric Films Prepared by Anodic Oxidation

Science.gov (United States)

Kamijyo, Masahiro; Onozuka, Tomotake; Shinkai, Satoko; Sasaki, Katsutaka; Yamane, Misao; Abe, Yoshio

2003-07-01

Polycrystalline ZrO2 thin film capacitors were prepared by anodizing sputter-deposited Zr films. Electrical measurements are performed for the parallel-plate anodized capacitors with an Al-ZrO2-Zr (metal-insulator-metal) structure, and a high capacitance density (0.6 μF/cm2) and a low dielectric loss of nearly 1% are obtained for a very thin-oxide capacitor anodized at 10 V. In addition, the leakage current density of this capacitor is about 1.8 × 10-8 A/cm2 at an applied voltage of 5 V. However, the leakage current is somewhat larger than that of a low-loss HfO2 capacitor. The leakage current density (J) of ZrO2 capacitors as a function of applied electric field (E) was investigated for several capacitors with different oxide thicknesses, by plotting \\ln(J) vs E1/2 curves. As a result, it is revealed that the conduction mechanism is due to the Poole-Frenkel effect, irrespective of the oxide thickness.

5.0 kV breakdown-voltage vertical GaN p-n junction diodes

Science.gov (United States)

Ohta, Hiroshi; Hayashi, Kentaro; Horikiri, Fumimasa; Yoshino, Michitaka; Nakamura, Tohru; Mishima, Tomoyoshi

2018-04-01

A high breakdown voltage of 5.0 kV has been achieved for the first time in vertical GaN p-n junction diodes by using our newly developed guard-ring structures. A resistance device was inserted between the main diode portion and the guard-ring portion in a ring-shaped p-n diode to generate a voltage drop over the resistance device by leakage current flowing through the guard-ring portion under negatively biased conditions before breakdown. The voltage at the outer mesa edge of the guard-ring portion, where the electric field intensity is highest and the destructive breakdown usually occurs, is decreased by the voltage drop, so the electric field concentration in the portion is reduced. By adopting this structure, the breakdown voltage (V B) is raised by about 200 V. Combined with a low measured on-resistance (R on) of 1.25 mΩ cm2, Baliga’s figure of merit (V\\text{B}2/R\\text{on}) was as high as 20 GW/cm2.

KCNE5 induces time- and voltage-dependent modulation of the KCNQ1 current

DEFF Research Database (Denmark)

Angelo, Kamilla; Jespersen, Thomas; Grunnet, Morten

2002-01-01

The function of the KCNE5 (KCNE1-like) protein has not previously been described. Here we show that KCNE5 induces both a time- and voltage-dependent modulation of the KCNQ1 current. Interaction of the KCNQ1 channel with KCNE5 shifted the voltage activation curve of KCNQ1 by more than 140 mV in th...... the I(Ks) current in certain parts of the mammalian heart....

A dense voltage-mode Josephson memory cell insensitive to systematic variations in critical current density

International Nuclear Information System (INIS)

Bradley, P.; Van Duzer, T.

1985-01-01

A destructive read-out (DRO) memory cell using three Josephson junctions has been devised whose operation depends only on the ratio of critical currents and application of the proper read/write voltages. The effects of run-to-run and across-thewafer variations in I /SUB c/ are minimized since all three junctions for a given cell are quite close to each other. Additional advantages are: immunity from flux trapping, high circuit density, and fast switching. Since destructive read-out is generally undesirable, a self-rewriting scheme is necessary. Rows and columns of cells with drivers and sense circuits, as well as small memory arrays and decoders have been simulated on SPICE. Power dissipation of cells and bias circuits for a 1K-bit RAM is estimated at about 2 mW. Inclusion of peripheral circuitry raises this by as much as a factor of five depending on the driving scheme and speed desired. Estimated access time is appreciably less than a nanosecond. Preliminary experimental investigations are reported

Effect of localized states on the current-voltage characteristics of metal-semiconductor contacts with thin interfacial layer

Science.gov (United States)

Chattopadhyay, P.

1994-10-01

The role of discrete localized states on the current-voltage characteristics of metal-semiconductor contact is examined. It is seen that, because of these localized states, the logarithmic current vs voltage characteristics become nonlinear. Such nonlinearity is found sensitive to the temperature, and the energy and density of the localized states. The predicted temperature dependence of barrier height and the current-voltage characteristics are in agreement with the experimental results of Aboelfotoh [ Phys. Rev. B39, 5070 (1989)].

Influence of 2 MeV electrons irradiation on gallium phosphide light-emitting diodes reverse currents

Directory of Open Access Journals (Sweden)

V. G. Vorobiov

2015-10-01

Full Text Available Results of reverse electrophysical characteristics study of red and green LEDs, initial and irradiated with 2 MeV electrons were given. It was found that reverse current was predominantly caused by carriers tunneling at Urev ≤ 9 V, and by the avalanche multiplication at Urev ≥ 13 V, in the range U = 9 ÷ 13 V both mechanisms are available. Current increase at high voltage areas (Urev > 19 V is limited by the base resistance of diode. In the case of significant reverse currents (I > 1 mA irradiation of diodes leads to the shift of reverse current-voltage characteristics into the high voltages direction.

Investigation of disorder and its effect on electrical transport in electrochemically doped polymer devices by current-voltage and impedance spectroscopy

Science.gov (United States)

Rahman Khan, Motiur; Anjaneyulu, P.; Koteswara Rao, K. S. R.; Menon, R.

2017-03-01

We report on the analysis of temperature-dependent current-voltage characteristics and impedance measurements of electrochemically doped poly(3-methylthiophene) devices at different doping levels. The extent of doping is carefully tailored such that only the bulk-limited transport mechanism prevails. A transition from exponentially distributed trap-limited transport to trap-free space-charge-limited current is observed in current-voltage conduction upon increasing the doping. The obtained trap densities (3.2  ×  1016 cm-3 and 8.6  ×  1015 cm-3) and trap energies (31.7 meV and 16.6 meV) for different devices signify the variation in disorder with doping, which is later supported by impedance measurements. Impedance-frequency data for various devices can not be explained using the parallel resistance-capacitance (RC) model in the equivalent circuit. However, this was established by incorporating a constant phase element Q (CPE) instead of the capacitance parameter. It should be emphasized that low doping devices in particular are best simulated with two CPE elements, while the data related to other devices are fitted well with a single CPE element. It is also observed from evaluated circuit parameters that the spatial inhomogeneity and disorder are the cause of variability in different samples, which has an excellent correlation with the temperature-dependent current-voltage characteristics.

The current-voltage relation of a pore and its asymptotic behavior in a Nernst-Planck model

Directory of Open Access Journals (Sweden)

Marius Birlea

2012-08-01

Full Text Available A model for current-voltage nonlinearity and asymmetry is a good starting point for explaining the electrical behavior of the nanopores in synthetic or biological membranes. Using a Nernst-Planck model, we found three behaviors for the current density in a membrane's pore as a function of voltage: a quasi-ohmic, slow rising linear current at low voltages, a nonlinear current at intermediate voltages, and a non-ohmic, fast rising linear current at large voltages. The slope of the quasi-ohmic current depends mainly on the height of energy barrier inside the pore, w, through an exponential term, ew. The magnitude of the non-ohmic linear current is controlled by the potential energy gradient at the pore entrance, w/r. The current-voltage relation is asymmetric if the ion's potential energy inside the pore has an asymmetric triangular profile. The model has only two assumed parameters, the energy barrier height, w, and the relative size of the entrance region of the pore, r, which is a useful feature for fitting and interpreting experimental data.

Study of current-voltage characteristics in PbTe(Ga) alloys at low temperatures

International Nuclear Information System (INIS)

Akimov, B.A.; Albul, A.V.; Bogdanov, E.V.

1992-01-01

Results of determining current-voltage characteristics in PbTe(Ga) monocrystals of n- and p-types of conductivity in strong electric fields E ≤ 2 x 10 3 V/Cm at 4.2-77 K are presented. It was established that at helium and nitrogen temperatures, the current-voltage characteristics of PbTe(Ga) alloys, high-ohmic state of which was realized in helium, differed qualitatively from ones, typical for unalloyed PbTe. The superlinear dependence, observed in the fields, beginning from E ≥ 1 V/cm, is explained in the framework of concepts of strong electric field effect on conductivity of impurity states

A Smart Voltage and Current Monitoring System for Three Phase Inverters Using an Android Smartphone Application.

Science.gov (United States)

Mnati, Mohannad Jabbar; Van den Bossche, Alex; Chisab, Raad Farhood

2017-04-15

In this paper, a new smart voltage and current monitoring system (SVCMS) technique is proposed. It monitors a three phase electrical system using an Arduino platform as a microcontroller to read the voltage and current from sensors and then wirelessly send the measured data to monitor the results using a new Android application. The integrated SVCMS design uses an Arduino Nano V3.0 as the microcontroller to measure the results from three voltage and three current sensors and then send this data, after calculation, to the Android smartphone device of an end user using Bluetooth HC-05. The Arduino Nano V3.0 controller and Bluetooth HC-05 are a cheap microcontroller and wireless device, respectively. The new Android smartphone application that monitors the voltage and current measurements uses the open source MIT App Inventor 2 software. It allows for monitoring some elementary fundamental voltage power quality properties. An effort has been made to investigate what is possible using available off-the-shelf components and open source software.

Controlled Conjugated Backbone Twisting for an Increased Open-Circuit Voltage while Having a High Short-Circuit Current in Poly(hexylthiophene) Derivatives

KAUST Repository

Ko, Sangwon

2012-03-21

Conjugated polymers with nearly planar backbones have been the most commonly investigated materials for organic-based electronic devices. More twisted polymer backbones have been shown to achieve larger open-circuit voltages in solar cells, though with decreased short-circuit current densities. We systematically impose twists within a family of poly(hexylthiophene)s and examine their influence on the performance of polymer:fullerene bulk heterojunction (BHJ) solar cells. A simple chemical modification concerning the number and placement of alkyl side chains along the conjugated backbone is used to control the degree of backbone twisting. Density functional theory calculations were carried out on a series of oligothiophene structures to provide insights on how the sterically induced twisting influences the geometric, electronic, and optical properties. Grazing incidence X-ray scattering measurements were performed to investigate how the thin-film packing structure was affected. The open-circuit voltage and charge-transfer state energy of the polymer:fullerene BHJ solar cells increased substantially with the degree of twist induced within the conjugated backbone-due to an increase in the polymer ionization potential-while the short-circuit current decreased as a result of a larger optical gap and lower hole mobility. A controlled, moderate degree of twist along the poly(3,4-dihexyl-2,2′:5′,2′′- terthiophene) (PDHTT) conjugated backbone led to a 19% enhancement in the open-circuit voltage (0.735 V) vs poly(3-hexylthiophene)-based devices, while similar short-circuit current densities, fill factors, and hole-carrier mobilities were maintained. These factors resulted in a power conversion efficiency of 4.2% for a PDHTT:[6,6]-phenyl-C 71-butyric acid methyl ester (PC 71BM) blend solar cell without thermal annealing. This simple approach reveals a molecular design avenue to increase open-circuit voltage while retaining the short-circuit current. © 2012 American

Controlled conjugated backbone twisting for an increased open-circuit voltage while having a high short-circuit current in poly(hexylthiophene) derivatives.

Science.gov (United States)

Ko, Sangwon; Hoke, Eric T; Pandey, Laxman; Hong, Sanghyun; Mondal, Rajib; Risko, Chad; Yi, Yuanping; Noriega, Rodrigo; McGehee, Michael D; Brédas, Jean-Luc; Salleo, Alberto; Bao, Zhenan

2012-03-21

Conjugated polymers with nearly planar backbones have been the most commonly investigated materials for organic-based electronic devices. More twisted polymer backbones have been shown to achieve larger open-circuit voltages in solar cells, though with decreased short-circuit current densities. We systematically impose twists within a family of poly(hexylthiophene)s and examine their influence on the performance of polymer:fullerene bulk heterojunction (BHJ) solar cells. A simple chemical modification concerning the number and placement of alkyl side chains along the conjugated backbone is used to control the degree of backbone twisting. Density functional theory calculations were carried out on a series of oligothiophene structures to provide insights on how the sterically induced twisting influences the geometric, electronic, and optical properties. Grazing incidence X-ray scattering measurements were performed to investigate how the thin-film packing structure was affected. The open-circuit voltage and charge-transfer state energy of the polymer:fullerene BHJ solar cells increased substantially with the degree of twist induced within the conjugated backbone--due to an increase in the polymer ionization potential--while the short-circuit current decreased as a result of a larger optical gap and lower hole mobility. A controlled, moderate degree of twist along the poly(3,4-dihexyl-2,2':5',2''-terthiophene) (PDHTT) conjugated backbone led to a 19% enhancement in the open-circuit voltage (0.735 V) vs poly(3-hexylthiophene)-based devices, while similar short-circuit current densities, fill factors, and hole-carrier mobilities were maintained. These factors resulted in a power conversion efficiency of 4.2% for a PDHTT:[6,6]-phenyl-C(71)-butyric acid methyl ester (PC(71)BM) blend solar cell without thermal annealing. This simple approach reveals a molecular design avenue to increase open-circuit voltage while retaining the short-circuit current.

Moderately nonlinear diffuse-charge dynamics under an ac voltage.

Science.gov (United States)

Stout, Robert F; Khair, Aditya S

2015-09-01

The response of a symmetric binary electrolyte between two parallel, blocking electrodes to a moderate amplitude ac voltage is quantified. The diffuse charge dynamics are modeled via the Poisson-Nernst-Planck equations for a dilute solution of point-like ions. The solution to these equations is expressed as a Fourier series with a voltage perturbation expansion for arbitrary Debye layer thickness and ac frequency. Here, the perturbation expansion in voltage proceeds in powers of V_{o}/(k_{B}T/e), where V_{o} is the amplitude of the driving voltage and k_{B}T/e is the thermal voltage with k_{B} as Boltzmann's constant, T as the temperature, and e as the fundamental charge. We show that the response of the electrolyte remains essentially linear in voltage amplitude at frequencies greater than the RC frequency of Debye layer charging, D/λ_{D}L, where D is the ion diffusivity, λ_{D} is the Debye layer thickness, and L is half the cell width. In contrast, nonlinear response is predicted at frequencies below the RC frequency. We find that the ion densities exhibit symmetric deviations from the (uniform) equilibrium density at even orders of the voltage amplitude. This leads to the voltage dependence of the current in the external circuit arising from the odd orders of voltage. For instance, the first nonlinear contribution to the current is O(V_{o}^{3}) which contains the expected third harmonic but also a component oscillating at the applied frequency. We use this to compute a generalized impedance for moderate voltages, the first nonlinear contribution to which is quadratic in V_{o}. This contribution predicts a decrease in the imaginary part of the impedance at low frequency, which is due to the increase in Debye layer capacitance with increasing V_{o}. In contrast, the real part of the impedance increases at low frequency, due to adsorption of neutral salt from the bulk to the Debye layer.

Depairing current density of Ba0.5K0.5Fe1.95Co0.05As2 microbridges with nanoscale thickness

International Nuclear Information System (INIS)

Li, Jun; Yuan, Jie; Ge, Jun-Yi; Ji, Min; Feng, Hai-Luke; Yuan, Ya-Hua; Hatano, Takeshi; Vanacken, Johan; Yamaura, Kazunari; Wang, Hua-Bing

2014-01-01

Highlights: • The critical current density of Ba 0.5 K 0.5 Fe 1.95 Co 0.05 As 2 microbridges is 7.9 MA/cm 2 at 21 K. • The critical current is in consistence with the Ginzburg–Landau depairing limit. • The depairing current density is less than that of impurity-free crystal. - Abstract: We investigated the depairing current density of Ba 0.5 K 0.5 Fe 1.95 Co 0.05 As 2 microbridges with width of 2 μm and thickness of 150 nm. The current vs. voltage characteristics of the microbridges show a Josephson-like behavior with the obvious hysteresis. The critical current density was observed as J c = 7.9 MA/cm 2 at temperature 21 K, which is consistent with the Ginzburg–Landau depairing limit. However, the depairing current density is less than that of impurity-free crystal, although the Co ions provide additional pinning centers within the superconducting Fe 2 As 2 layers. The Co impurity also enhances the anisotropic factor of the critical current density by 1.3 (1 T) or 1.7 (3 T)

Development of high voltage surge limiting resistor for protection of HV multiplier of 3 MeV DC accelerator

International Nuclear Information System (INIS)

Dewangan, S.; Sharma, D.K.; Bakhtsingh, R.I.

2013-01-01

A 3MeV, 10mA DC electron beam accelerator is in commissioning stages at EBC, Kharghar, Navi Mumbai. The accelerating potential of -3MV is generated by a Parallel Coupled Voltage Multiplier (PCVM) scheme using 74 stages of HV rectifier stacks in the 6 kg/cm 2 SF6 gas environment. The HV surges of order of 600kV, 42kA, 10ns is estimated across the rectifier stacks during sparking in the multiplier column. To limit the surge current and protect the rectifier diodes, a non inductive thick film surge limiting resistor (SLR) and protective spark gap is designed and developed. The rectifier stacks with surge limiting resistors at both the ends and protective spark gap in parallel has been successfully tested in simulated surge condition at an impulse voltage of 212kVp, 150ns FWHM and surge energy of 200J, 10ms, 20kV at 6kg/cm 2 SF6 gas environment and found satisfactorily. Subsequently the HV multiplier was installed with this surge protection scheme and is being tested at 1.2 MeV level. This paper describes the design features and test results of the non-inductive surge limiting resistor. (author)

Tunneling effects in the current-voltage characteristics of high-efficiency GaAs solar cells

Science.gov (United States)

Kachare, R.; Anspaugh, B. E.; Garlick, G. F. J.

1988-01-01

Evidence is that tunneling via states in the forbidden gap is the dominant source of excess current in the dark current-voltage (I-V) characteristics of high-efficiency DMCVD grown Al(x)Ga(1-x)As/GaAs(x is equal to or greater than 0.85) solar cells. The dark forward and reverse I-V measurements were made on several solar cells, for the first time, at temperatures between 193 and 301 K. Low-voltage reverse-bias I-V data of a number of cells give a thermal activation energy for excess current of 0.026 + or - 0.005 eV, which corresponds to the carbon impurity in GaAs. However, other energy levels between 0.02 eV and 0.04 eV were observed in some cells which may correspond to impurity levels introduced by Cu, Si, Ge, or Cd. The forward-bias excess current is mainly due to carrier tunneling between localized levels created in the space-charge layer by impurities such as carbon, which are incorporated during the solar cell growth process. A model is suggested to explain the results.

Definition of current density in the presence of a non-local potential

International Nuclear Information System (INIS)

Li Changsheng; Wan Langhui; Wei Yadong; Wang Jian

2008-01-01

In the presence of a non-local potential arising from electron-electron interaction, the conventional definition of current density J c = (e/2m)([(p-eA)ψ]*ψ-ψ*[(p-eA)ψ]) cannot satisfy the condition of current conservation, i.e., ∇ . J c ≠ 0 in the steady state. In order to solve this problem, we give a new definition of current density including the contribution due to the non-local potential. We show that the current calculated based on the new definition of current density conserves the current and is the same as that obtained from the Landauer-Buettiker formula. Examples are given to demonstrate our results

A CACNA1C variant associated with reduced voltage-dependent inactivation, increased CaV1.2 channel window current, and arrhythmogenesis.

Directory of Open Access Journals (Sweden)

Jessica A Hennessey

Full Text Available Mutations in CACNA1C that increase current through the CaV1.2 L-type Ca2+ channel underlie rare forms of long QT syndrome (LQTS, and Timothy syndrome (TS. We identified a variant in CACNA1C in a male child of Filipino descent with arrhythmias and extracardiac features by candidate gene sequencing and performed functional expression studies to electrophysiologically characterize the effects of the variant on CaV1.2 channels. As a baby, the subject developed seizures and displayed developmental delays at 30 months of age. At age 5 years, he displayed a QTc of 520 ms and experienced recurrent VT. Physical exam at 17 years of age was notable for microcephaly, short stature, lower extremity weakness and atrophy with hyperreflexia, spastic diplegia, multiple dental caries and episodes of rhabdomyolysis. Candidate gene sequencing identified a G>C transversion at position 5731 of CACNA1C (rs374528680 predicting a glycine>arginine substitution at residue 1911 (p.G1911R of CaV1.2. The allele frequency of this variant is 0.01 in Malays, but absent in 984 Caucasian alleles and in the 1000 genomes project. In electrophysiological analyses, the variant decreased voltage-dependent inactivation, thus causing a gain of function of CaV1.2. We also observed a negative shift of V1/2 of activation and positive shift of V1/2 of channel inactivation, resulting in an increase of the window current. Together, these suggest a gain-of-function effect on CaV1.2 and suggest increased susceptibility for arrhythmias in certain clinical settings. The p.G1911R variant was also identified in a case of sudden unexplained infant death (SUID, for which an increasing number of clinical observations have demonstrated can be associated with arrhythmogenic mutations in cardiac ion channels. In summary, the combined effects of the CACNA1C variant to diminish voltage-dependent inactivation of CaV1.2 and increase window current expand our appreciation of mechanisms by which a gain of

Water Electrolysis at Different Current - Voltage Regimes

International Nuclear Information System (INIS)

Kleperis, J.; Blums, J.; Vanags, M.

2007-01-01

Full text: Electrochemical impedance and volt-amperic methods were used to compare an efficiency of water electrolysis for different materials and different electrode configurations. Two and three electrode measurements were made, using standard calomel reference electrode. Non-standard capacitative electrolysis was analyzed in special cell made from cylindrical steel electrodes. Volt-amperic measurements from - 15V to +15V DC didn't indicated the presence of oxidation - reduction reactions when distilled water was used as electrolyte. Impedance measurements showed unusual frequency behavior when the AC voltage increased till 0.5V. Different nickel and carbon electrodes (plate, porous and textile - type) were used to learn classical Faraday electrolysis in strong alkali solutions. Flying increase of current was indicator of the presence of electrolysis, and characteristic potential was used differ between materials accordingly they effectiveness for usage in an electrolyser device. (Aithors)

Dynamic range of low-voltage cascode current mirrors

DEFF Research Database (Denmark)

Bruun, Erik; Shah, Peter Jivan

1995-01-01

Low-voltage cascode current mirrors are reviewed with respect to the design limitations imposed if all transistors in the mirror are required to operate in the saturation region. It is found that both a lower limit and an upper limit exist for the cascode transistor bias voltage. Further, the use....... The proposed configuration has the advantage of simplicity combined with a complete elimination of the need for fixed bias voltages or bias currents in the current mirror. A disadvantage is that it requires a higher input voltage to the current mirror...

Leakage Currents in Low-Voltage PME and BME Ceramic Capacitors

Science.gov (United States)

Teverovsky, Alexander

2015-01-01

Introduction of BME capacitors to high-reliability electronics as a replacement for PME capacitors requires better understanding of changes in performance and reliability of MLCCs to set justified screening and qualification requirements. In this work, absorption and leakage currents in various lots of commercial and military grade X7R MLCCs rated to 100V and less have been measured to reveal difference in behavior of PME and BME capacitors in a wide range of voltages and temperatures. Degradation of leakage currents and failures in virgin capacitors and capacitors with introduced cracks has been studied at different voltages and temperatures during step stress highly accelerated life testing. Mechanisms of charge absorption, conduction and degradation have been discussed and a failure model in capacitors with defects suggested.

The high voltage homopolar generator

Science.gov (United States)

Price, J. H.; Gully, J. H.; Driga, M. D.

1986-11-01

System and component design features of proposed high voltage homopolar generator (HVHPG) are described. The system is to have an open circuit voltage of 500 V, a peak output current of 500 kA, 3.25 MJ of stored inertial energy and possess an average magnetic-flux density of 5 T. Stator assembly components are discussed, including the stator, mount structure, hydrostatic bearings, main and motoring brushgears and rotor. Planned operational procedures such as monitoring the rotor to full speed and operation with a superconducting field coil are delineated.

J/ψ production as a function of charged-particle pseudorapidity density in p–Pb collisions at √sNN = 5.02 TeV

NARCIS (Netherlands)

Adamová, D.; Aggarwal, M. M.; Aglieri Rinella, G.; Agnello, M.; Agrawal, N.; Ahammed, Z.; Ahmad, N.; Ahn, S. U.; Aiola, S.; Akindinov, A.; Alam, S. N.; Albuquerque, D. S. D.; Aleksandrov, D.; Alessandro, B.; Alexandre, D.; Alfaro Molina, R.; Alici, A.; Alkin, A.; Alme, J.; Alt, T.; Altsybeev, I.; Alves Garcia Prado, C.; Janssen, M M; Andrei, C.; Andrews, H. A.; Andronic, A.; Anguelov, V.; Anson, C. D.; Antičić, T.; Antinori, F.; Antonioli, P.; Anwar, R.; Aphecetche, L.; Appelshäuser, H.; Arcelli, S.; Arnaldi, R.; Arnold, O. W.; Arsene, I. C.; Arslandok, M.; Audurier, B.; Augustinus, A.; Averbeck, R.; Azmi, M. D.; Badalà, A.; Baek, Y. W.; Bagnasco, S.; Bailhache, R.; Bala, R.; Baldisseri, A.; Ball, M.C.; Baral, R. C.; Barbano, A. M.; Barbera, R.; Barile, F.; Barioglio, L.; Barnaföldi, G. G.; Barnby, L. S.; Barret, V.; Bartalini, P.; Barth, K.; Bartke, J.; Bartsch, E.; Basile, M.; Bastid, N.; Basu, S.; Bathen, B.; Batigne, G.; Batista Camejo, A.; Batyunya, B.; Batzing, P. C.; Bearden, I. G.; Beck, H.; Bedda, C.|info:eu-repo/dai/nl/411263188; Behera, N. K.; Belikov, I.; Bellini, F.; Bello Martinez, H.; Bellwied, R.; Beltran, L. G. E.; Belyaev, V.; Bencedi, G.; Beole, S.; Bercuci, A.; Berdnikov, Y.; Berenyi, D.; Bertens, R. A.|info:eu-repo/dai/nl/371577810; Berzano, D.; Betev, L.; Bhasin, A.; Bhat, I. R.; Bhati, A. K.; Bhattacharjee, B.; Bhom, J.; Bianchi, L.; Bianchi, N.; Bianchin, C.|info:eu-repo/dai/nl/371578248; Bielčík, J.; Bielčíková, J.; Bilandzic, A.; Biro, G.; Biswas, R.; Biswas, S.; Blair, J. T.; Blau, D.; Blume, C.; Boca, G.; Bock, F.; Bogdanov, A.; Boldizsár, L.; Bombara, M.; Bonomi, G.; Bonora, M.; Book, J.; Borel, H.; Borissov, A.; Borri, M.; Botta, E.; Bourjau, C.; Braun-Munzinger, P.; Bregant, M.; Broker, T. A.; Browning, T. A.; Broz, M.; Brucken, E. J.; Bruna, E.; Bruno, G. E.; Budnikov, D.; Buesching, H.; Bufalino, S.; Buhler, P.; Iga Buitron, S. A.; Buncic, P.; Busch, O.; Buthelezi, Z.; Butt, J. B.; Buxton, J. T.; Cabala, J.; Caffarri, D.; Caines, H.; Caliva, A.|info:eu-repo/dai/nl/411885812; Calvo Villar, E.; Camerini, P.; Capon, A. A.; Carena, F.; Carena, W.; Carnesecchi, F.; Castillo Castellanos, J.; Castro, A. J.; Casula, E. A R; Ceballos Sanchez, C.; Cerello, P.; Chang, B.; Chapeland, S.; Chartier, M.; Charvet, J. L.; Chattopadhyay, S.; Chattopadhyay, S.; Chauvin, A.; Cherney, M.; Cheshkov, C.; Cheynis, B.; Chibante Barroso, V.; Chinellato, D. D.; Cho, Sukhee; Chochula, P.; Choi, K.; Chojnacki, M.|info:eu-repo/dai/nl/411888056; Choudhury, S.; Christakoglou, P.; Christensen, C. H.; Christiansen, P.; Chujo, T.; Chung, S. U.; Cicalo, C.; Cifarelli, L.; Cindolo, F.; Cleymans, J.; Colamaria, F.; Colella, D.; Collu, A.; Colocci, M.; Conesa Balbastre, G.; Conesa del Valle, Z.; Connors, M. E.; Contreras, J. G.; Cormier, T. M.; Corrales Morales, Y.; Cortés Maldonado, I.; Cortese, P.; Cosentino, M. R.; Costa, F.; Costanza, S.; Crkovská, J.; Crochet, P.; Cuautle, E.; Cunqueiro, L.; Dahms, T.; Dainese, A.; Danisch, M. C.; Danu, A.; Das, D.; Das, I.; Das, S.; Dash, A.; Dash, S.; Dasgupta, S. S.; De Caro, A.; De Cataldo, G.; De Conti, C.; De Cuveland, J.; De Falco, A.; De Gruttola, D.; De Marco, N.; De Pasquale, S.; De Souza, R. Derradi; Degenhardt, H. F.; Deisting, A.; Deloff, A.; Deplano, C.; Dhankher, P.; Di Bari, D.; Di Mauro, A.; Di Nezza, P.; Di Ruzza, B.; Diaz Corchero, M. A.; Dietel, T.; Dillenseger, P.; Divià, R.; Djuvsland, O.; Dobrin, A.|info:eu-repo/dai/nl/372618715; Domenicis Gimenez, D.; Dönigus, B.; Dordic, O.; Drozhzhova, T.; Dubey, A. K.; Dubla, A.|info:eu-repo/dai/nl/355502488; Ducroux, L.; Duggal, A. K.; Dupieux, P.; Ehlers, R. J.; Elia, D.; Endress, E.; Engel, H.; Epple, E.; Erazmus, B.; Erhardt, F.; Espagnon, B.; Esumi, S.; Eulisse, G.; Eum, J.; Evans, D.; Evdokimov, S.; Fabbietti, L.; Faivre, J.; Fantoni, A.; Fasel, M.; Feldkamp, L.; Feliciello, A.; Feofilov, G.; Ferencei, J.; Fernández Téllez, A.; Ferreiro, E. G.; Ferretti, A.; Festanti, A.; Feuillard, V. J. G.; Figiel, J.; Figueredo, M. A S; Filchagin, S.; Finogeev, D.; Fionda, F. M.; Fiore, E. M.; Floris, M.; Foertsch, S.; Foka, P.; Fokin, S.; Fragiacomo, E.; Francescon, A.; De Francisco, A.; Frankenfeld, U.; Fronze, G. G.; Fuchs, U.; Furget, C.; Furs, A.; Fusco Girard, M.; Gaardhøje, J. J.; Gagliardi, M.; Gago, A. M.; Gajdosova, K.; Gallio, M.; Galvan, C. D.; Ganoti, P.; Gao, C.; Garabatos, C.; Garcia-Solis, E.; Garg, K.; Garg, P.; Gargiulo, C.; Gasik, P.; Gauger, E. F.; Gay Ducati, M. B.; Germain, M.; Ghosh, P.; Ghosh, S. K.; Gianotti, P.; Giubellino, P.; Giubilato, P.; Gladysz-Dziadus, E.; Glässel, P.; Goméz Coral, D. M.; Gomez Ramirez, A.; Gonzalez, A. S.; Gonzalez, V; González-Zamora, P.; Gorbunov, S.; Görlich, L.; Gotovac, S.; Grabski, V.; Graczykowski, L. K.; Graham, K. L.; Greiner, L. C.; Grelli, A.|info:eu-repo/dai/nl/326052577; Grigoras, C.; Grigoriev, V.; Grigoryan, A.; Grigoryan, S.; Grion, N.; Gronefeld, J. M.; Grosa, F.; Grosse-Oetringhaus, J. F.; Grosso, R.; Gruber, L.; Grull, F. R.; Guber, F.; Guernane, R.; Guerzoni, B.; Gulbrandsen, K.; Gunji, T.; Gupta, A.; Gupta, R.; Guzman, I. B.; Haake, R.; Hadjidakis, C.; Hamagaki, H.; Hamar, G.; Hamon, J. C.; Harris, J. W.; Harton, A.; Hatzifotiadou, D.; Hayashi, S.; Heckel, S. T.; Hellbär, E.; Helstrup, H.; Herghelegiu, A.; Herrera Corral, G.; Herrmann, F.; Hess, B. A.; Hetland, K. F.; Hillemanns, H.; Hippolyte, B.; Hladky, J.; Hohlweger, B.; Horak, D.; Hosokawa, R.; Hristov, P.; Hughes, C.W.; Humanic, T. J.; Hussain, N.; Hussain, T.; Hutter, D.; Hwang, D. S.; Ilkaev, R.; Inaba, M.; Ippolitov, M.; Irfan, M.; Isakov, V.; Islam, M. S.; Ivanov, M.; Ivanov, V.; Izucheev, V.; Jacak, B.; Jacazio, N.; Jacobs, P. M.; Jadhav, M. B.; Jadlovska, S.; Jadlovsky, J.; Jaelani, S.; Jahnke, C.; Jakubowska, M. J.; Janik, M. A.; Jayarathna, P. H S Y; Jena, C.; Jena, S.; Jercic, M.; Jimenez Bustamante, R. T.; Jones, P. G.; Jusko, A.; Kalinak, P.; Kalweit, A.; Kang, J. H.; Kaplin, V.; Kar, S.; Karasu Uysal, A.; Karavichev, O.; Karavicheva, T.; Karayan, L.; Karpechev, E.; Kebschull, U.; Keidel, R.; Keijdener, D. L.D.|info:eu-repo/dai/nl/370530780; Keil, M.; Ketzer, B.; Mohisin Khan, M.; Khan, P.M.; Khan, Shfaqat A.; Khanzadeev, A.; Kharlov, Y.; Khatun, A.; Khuntia, A.; Kielbowicz, M. M.; Kileng, B.; Kim, D. W.; Kim, D. J.; Kim, D.-S.; Kim, H.; Kim, J. S.; Kim, J.; Kim, M.; Kim, M.; Kim, S.; Kim, T.; Kirsch, S.; Kisel, I.; Kiselev, S.; Kisiel, A.; Kiss, G.; Klay, J. L.; Klein, C; Klein, J.; Klein-Bösing, C.; Klewin, S.; Kluge, A.; Knichel, M. L.; Knospe, A. G.; Kobdaj, C.; Kofarago, M.|info:eu-repo/dai/nl/371571227; Kollegger, T.; Kolojvari, A.; Kondratiev, V.; Kondratyeva, N.; Kondratyuk, E.; Konevskikh, A.; Kopcik, M.; Kour, M.; Kouzinopoulos, C.; Kovalenko, O.; Kovalenko, V.; Kowalski, M.L.; Koyithatta Meethaleveedu, G.; Králik, I.; Kravčáková, A.; Krivda, M.; Krizek, F.; Kryshen, E.; Krzewicki, M.|info:eu-repo/dai/nl/362845670; Kubera, A. M.; Kučera, V.; Kuhn, C.; Kuijer, P. G.|info:eu-repo/dai/nl/074064975; Kumar, A.; Kumar, J.; Kumar, L.; Kumar, S.; Kundu, Seema; Kurashvili, P.; Kurepin, A.; Kurepin, A. B.; Kuryakin, A.; Kushpil, S.; Kweon, M. J.; Kwon, Y.; La Pointe, S. L.|info:eu-repo/dai/nl/355080192; La Rocca, P.; Lagana Fernandes, C.; Lakomov, I.; Langoy, R.; Lapidus, K.; Lara, C.; Lardeux, A.; Lattuca, A.; Laudi, E.; Lavicka, R.; Lazaridis, L.; Lea, R.; Leardini, L.; Lee, S.; Lehas, F.|info:eu-repo/dai/nl/411295721; Strunz-Lehner, Christine; Lehrbach, J.; Lemmon, R. C.; Lenti, V.; Leogrande, E.; León Monzón, I.; Lévai, P.; Li, S.; Li, X.; Lien, J.; Lietava, R.; Lindal, S.; Lindenstruth, V.; Lippmann, C.; Lisa, M. A.; Litichevskyi, V.; Ljunggren, H. M.; Llope, W. J.; Lodato, D. F.; Loenne, P. I.; Loginov, V.; Loizides, C.; Loncar, P.; Lopez, X.; López Torres, E.; Lowe, A.; Luettig, P.; Lunardon, M.; Luparello, G.|info:eu-repo/dai/nl/355080400; Lupi, M.; Lutz, T. H.; Maevskaya, A.; Mager, M.; Mahajan, S.; Mahmood, S. M.; Maire, A.; Majka, R. D.; Malaev, M.; Maldonado Cervantes, I.; Malinina, L.; Mal'kevich, D.; Malzacher, P.; Mamonov, A.; Manko, V.; Manso, F.; Manzari, V.; Mao, Y.; Marchisone, M.; Mareš, J.; Margagliotti, G. V.; Margotti, A.; Margutti, J.|info:eu-repo/dai/nl/412461684; Marín, Alicia; Markert, C.; Marquard, M.; Martin, N. A.; Martin Blanco, J.; Martinengo, P.; Martinez, J. A. L.; Martínez, Isabel M.; Martínez García, G.; Martinez Pedreira, M.; Mas, A.; Masciocchi, S.; Masera, M.; Masoni, A.; Mastroserio, A.; Mathis, A. M.; Matyja, A.; mayer, C.; Mazer, J.; Mazzilli, M.; Mazzoni, M. A.; Meddi, F.; Melikyan, Y.; Menchaca-Rocha, A.; Meninno, E.; Mercado Pérez, J.; Meres, M.; Mhlanga, S.; Miake, Y.; Mieskolainen, M. M.; Mihaylov, D. L.; Mikhaylov, K.; Milano, L.; Milosevic, J.; Mischke, A.|info:eu-repo/dai/nl/325781435; Mishra, A. N.; Miśkowiec, D.; Mitra, J.; Mitu, C. M.; Mohammadi, N.|info:eu-repo/dai/nl/369405870; Mohanty, B.; Montes, E.; Moreira De Godoy, D. A.; Moreno, L. A. P.; Moretto, S.; Morreale, A.; Morsch, A.; Muccifora, V.; Mudnic, E.; Mühlheim, D.; Muhuri, S.; Mukherjee, M.; Mulligan, J. D.; Munhoz, M. G.; Münning, K.; Munzer, R. H.; Murakami, H.; Murray, S.; Musa, L.; Musinsky, J.; Myers, C. J.; Naik, B.; Nair, Rajiv; Nandi, B. K.; Nania, R.; Nappi, E.; Naru, M. U.; Natal Da Luz, H.; Nattrass, C.; Navarro, S. R.; Nayak, K.; Nayak, R.; Nayak, T. K.; Nazarenko, S.; Nedosekin, A.; Negrao De Oliveira, R. A.; Nellen, L.; Nesbo, S. V.; Ng, F.; Nicassio, M.; Niculescu, M.; Niedziela, J.; Nielsen, B. S.; Nikolaev, S.; Nikulin, S.; Nikulin, V.; Noferini, F.; Nomokonov, P.; Nooren, G.|info:eu-repo/dai/nl/07051349X; Noris, J. C. C.; Norman, J.; Nyanin, A.; Nystrand, J.; Oeschler, H.; Oh, S.; Ohlson, A.; Okubo, T.; Olah, L.; Oleniacz, J.; Oliveira Da Silva, A. C.|info:eu-repo/dai/nl/323375618; Oliver, M. H.; Onderwaater, J.; Oppedisano, C.; Orava, R.; Oravec, M.; Ortiz Velasquez, A.; Oskarsson, A.; Otwinowski, J.; Oyama, K.; Pachmayer, Y.; Pacik, V.; Pagano, D.; Pagano, P.; Paić, G.; Palni, P.; Pan, J.; Pandey, A. K.; Panebianco, S.; Papikyan, V.; Pappalardo, G. S.; Pareek, P.; Park, J.; Park, J.-W.; Parmar, S.; Passfeld, A.; Pathak, S. P.; Paticchio, V.; Patra, R. N.; Paul, B.; Pei, H.; Peitzmann, T.|info:eu-repo/dai/nl/304833959; Peng, X.; Pereira, L. G.; Pereira Da Costa, H.; Peresunko, D.; Perez Lezama, E.; Peskov, V.; Pestov, Y.; Petráček, V.; Petrov, V.; Petrovici, M.; Petta, C.; Pezzi, R. P.; Piano, S.; Pikna, M.; Pillot, P.; Pimentel, L. O. D. L.; Pinazza, O.; Pinsky, L.; Piyarathna, D. B.; Płoskoń, M.; Planinic, M.; Pluta, J.; Pochybova, S.; Podesta-Lerma, P. L M; Poghosyan, M. G.; Polichtchouk, B.; Poljak, N.; Poonsawat, W.; Pop, A.; Poppenborg, H.; Porteboeuf-Houssais, S.; Porter, J.; Pospisil, J.; Pozdniakov, V.; Prasad, S. K.; Preghenella, R.; Prino, F.; Pruneau, C. A.; Pshenichnov, I.; Puccio, M.; Puddu, G.; Pujahari, P.; Punin, V.; Putschke, J.; Qvigstad, H.; Rachevski, A.; Raha, S.; Rajput, S.; Rak, J.; Rakotozafindrabe, A.; Ramello, L.; Rami, F.; Rana, D. B.; Raniwala, R.; Raniwala, S.; Räsänen, S.; Rascanu, B. T.; Rathee, D.; Ratza, V.; Ravasenga, I.; Read, K. F.; Redlich, K.; Rehman, A.; Reichelt, P.; Reidt, F.; Ren, X.; Renfordt, R.; Reolon, A. R.; Reshetin, A.; Reygers, K.; Riabov, V.; Ricci, R. A.; Richert, T.|info:eu-repo/dai/nl/413319628; Richter, M.; Riedler, P.; Riegler, W.; Riggi, F.; Ristea, C.; Rodríguez Cahuantzi, M.; Røed, K.; Rogochaya, E.; Rohr, D.; Röhrich, D.; Rokita, P. S.; Ronchetti, F.; Ronflette, L.; Rosnet, P.; Rossi, A.; Rotondi, A.; Roukoutakis, F.; Roy, A.; Roy, C.; Roy, P.; Rubio Montero, A. J.; Rui, R.; Russo, R.; Rustamov, A.; Ryabinkin, E.; Ryabov, Y.; Rybicki, A.; Saarinen, S.; Sadhu, S.; Sadovsky, S.; Šafařík, K.; Saha, S. K.; Sahlmuller, B.; Sahoo, B.; Sahoo, P.; Sahoo, R.; Sahoo, S.; Sahu, P. K.; Saini, J.; Sakai, S.; Saleh, M. A.; Salzwedel, J.; Sambyal, S.; Samsonov, V.; Sandoval, A.; Sarkar, D.; Sarkar, N.; Sarma, P.; Sas, M. H.P.|info:eu-repo/dai/nl/413332993; Scapparone, E.; Scarlassara, F.; Scharenberg, R. P.; Scheid, H. S.; Schiaua, C.; Schicker, R.; Schmidt, C.; Schmidt, H. R.; Schmidt, M. O.; Schmidt, M.; Schuchmann, S.; Schukraft, J.; Schutz, Y.; Schwarz, K.; Schweda, K.; Scioli, G.; Scomparin, E.; Scott, R.; Šefčík, M.; Seger, J. E.; Sekiguchi, Y.; Sekihata, D.; Selyuzhenkov, I.; Senosi, K.; Senyukov, S.; Serradilla, E.; Sett, P.; Sevcenco, A.; Shabanov, A.; Shabetai, A.; Shadura, O.; Shahoyan, R.; Shangaraev, A.; Sharma, A.; Sharma, A.; Sharma, M.; Sharma, M.; Sharma, N.; Sheikh, A. I.; Shigaki, K.; Shou, Q. Y.; Shtejer, K.; Sibiriak, Y.; Siddhanta, S.; Sielewicz, K. M.; Siemiarczuk, T.; Silvermyr, D.; Silvestre, C.; Simatovic, G.; Simonetti, G.; Singaraju, R.; Singh, R; Singhal, V.; Sinha, T.; Sitar, B.; Sitta, M.; Skaali, T. B.; Slupecki, M.; Smirnov, N.; Snellings, R. J.M.|info:eu-repo/dai/nl/165585781; Snellman, T. W.; Song, J.; Song, M.; Soramel, F.; Sorensen, S.; Sozzi, F.; Spiriti, E.; Sputowska, I.; Srivastava, B. K.; Stachel, J.; Stan, I.; Stankus, P.; Stenlund, E.; Stiller, J. H.; Stocco, D.; Strmen, P.; Suaide, A. A P; Sugitate, T.; Suire, C.; Suleymanov, M.; Suljic, M.; Sultanov, R.; Šumbera, M.; Sumowidagdo, S.; Suzuki, K.; Swain, S.; Szabo, A.; Szarka, I.; Szczepankiewicz, A.; Szymanski, M.; Tabassam, U.; Takahashi, J.; Tambave, G. J.; Tanaka, N.; Tarhini, M.; Tariq, M.; Tarzila, M. G.; Tauro, A.; Tejeda Muñoz, G.; Telesca, A.; Terasaki, K.; Terrevoli, C.; Teyssier, B.; Thakur, D.; Thakur, J. S.; Thomas, D.; Tieulent, R.; Tikhonov, A.; Timmins, A. R.; Toia, A.; tripathy, S.; Trogolo, S.; Trombetta, G.; Trubnikov, V.; Trzaska, W. H.; Trzeciak, B. A.; Tsuji, T.; Tumkin, A.; Turrisi, R.; Tveter, T. S.; Ullaland, K.; Umaka, E. N.; Uras, A.; Usai, G. L.; Utrobicic, A.; Vala, M.; Van Der Maarel, J.|info:eu-repo/dai/nl/412860996; Van Hoorne, J. W.; van Leeuwen, M.|info:eu-repo/dai/nl/250599171; Vanat, T.; Vande Vyvre, P.; Varga, D.; Vargas, A.; Vargyas, M.; Varma, R.; Vasileiou, M.; Vasiliev, A.; Vauthier, A.; Vázquez Doce, O.; Vechernin, V.; Veen, A. M.|info:eu-repo/dai/nl/413533751; Velure, A.; Vercellin, E.; Vergara Limón, S.; Vernet, R.; Vértesi, R.; Vickovic, L.; Vigolo, S.; Viinikainen, J.; Vilakazi, Z.; Villalobos Baillie, O.; Villatoro Tello, A.; Vinogradov, A.; Vinogradov, L.; Virgili, T.; Vislavicius, V.; Vodopyanov, A.; Völkl, M. A.; Voloshin, K.; Voloshin, S. A.; Volpe, G.; Haller, B.; Vorobyev, I.; Voscek, D.; Vranic, D.; Vrláková, J.; Wagner, B.; Wagner, J.; Wang, H.|info:eu-repo/dai/nl/369509307; Wang, M.; Watanabe, D.; Watanabe, Y.; Weber, M.; Weber, S. G.; Weiser, D. F.; Wessels, J. P.; Westerhoff, U.; Whitehead, A. M.; Wiechula, J.; Wikne, J.; Wilk, G.; Wilkinson, J.; Willems, G. A.; Williams, M. C S; Windelband, B.; Winn, M.; Witt, W. E.; Yalcin, S.; Yang, P.; Yano, S.; Yin, Z.; Yokoyama, H.; Yoo, I. K.; Yoon, J. H.; Yurchenko, V.; Zaccolo, V.; Zaman, A.; Zampolli, C.; Zanoli, H. J. C.; Zardoshti, N.; Zarochentsev, A.; Závada, P.; Zaviyalov, N.; Zbroszczyk, H.; Zhalov, M.; Zhang, H.; Zhang, X.; Zhang, Y.; Zhang, C.; Zhang, Z.; Zhao, C.; Zhigareva, N.; Zhou, D.; Zhou, Y.; Zhou, Z.; Zhu, H.; Zhu, J.; Zhu, X.; Zichichi, A.; Zimmermann, A.; Zimmermann, M. B.; Zimmermann, S.; Zinovjev, G.; Zmeskal, J.

2018-01-01

We report measurements of the inclusive J/ψ yield and average transverse momentum as a function of charged-particle pseudorapidity density dNch/dη in p–Pb collisions at √sNN = 5.02 TeV with ALICE at the LHC. The observables are normalised to their corresponding averages in non-single diffractive

Optimize of Deuteron Current of 150 keV, 1 mA Neutron Generator

International Nuclear Information System (INIS)

Sri Sulamdari; Djasiman

2003-01-01

It has been characterized a 150 keV/1 mA Neutron Generator. It has been used some local components, except accelerator tube and vacuum system. To produce neutron, it has been used a deuterium gas bombarded into tritium target through reaction 3 H(d,n) 4 He. For preliminary experiment, we used the air as an ion source. The beam current of deuteron as a function of process parameters are presented in this paper. It's found that the optimum beam current of deuteron was 1000 μA, and this conditions was achieved at accelerations voltage 30 kV, extraction voltage 5 kV, guide voltage -11 kV and vacuum 10 -6 mbar. (author)

Improved performance of the microbial electrolysis desalination and chemical-production cell with enlarged anode and high applied voltages.

Science.gov (United States)

Ye, Bo; Luo, Haiping; Lu, Yaobin; Liu, Guangli; Zhang, Renduo; Li, Xiao

2017-11-01

The aim of this study was to improve performance of the microbial electrolysis desalination and chemical-production cell (MEDCC) using enlarged anode and high applied voltages. MEDCCs with anode lengths of 9 and 48cm (i.e., the 9cm-anode MEDCC and 48cm-anode MEDCC, respectively) were tested under different voltages (1.2-3.0V). Our results demonstrated for the first time that the MEDCC could maintain high performance even under the applied voltage higher than that for water dissociation (i.e., 1.8V). Under the applied voltage of 2.5V, the maximum current density in the 48cm-anode MEDCC reached 32.8±2.6A/m 2 , which is one of the highest current densities reported so far in the bioelectrochemical system (BES). The relative abundance of Geobacter was changed along the anode length. Our results show the great potential of the BES with enlarged anode and high applied voltages. Copyright © 2017 Elsevier Ltd. All rights reserved.

Associating ground magnetometer observations with current or voltage generators

DEFF Research Database (Denmark)

Hartinger, M. D.; Xu, Z.; Clauer, C. R.

2017-01-01

A circuit analogy for magnetosphere-ionosphere current systems has two extremes for driversof ionospheric currents: ionospheric elec tric fields/voltages constant while current/conductivity vary—the“voltage generator”—and current constant while electric field/conductivity vary—the “current generator.......”Statistical studies of ground magnetometer observations associated with dayside Transient High LatitudeCurrent Systems (THLCS) driven by similar mechanisms find contradictory results using this paradigm:some studies associate THLCS with voltage generators, others with current generators. We argue that mostof...... these two assumptions substantially alter expectations for magnetic perturbations associatedwith either a current or a voltage generator. Our results demonstrate that before interpreting groundmagnetometer observations of THLCS in the context of current/voltage generators, the location...

Mechanism of formation of subnanosecond current front in high-voltage pulse open discharge

Science.gov (United States)

Schweigert, I. V.; Alexandrov, A. L.; Zakrevsky, Dm. E.; Bokhan, P. A.

2014-11-01

The mechanism of subnanosecond current front rise observed previously in the experiment in high-voltage pulse open discharge in helium is studied in kinetic particle-in-cell simulations. The Boltzmann equations for electrons, ions, and fast atoms are solved self-consistently with the Poisson equations for the electrical potential. The partial contributions to the secondary electron emission from the ions, fast atoms, photons, and electrons, bombarding the electrode, are calculated. In simulations, as in the experiment, the discharge glows between two symmetrical cathodes and the anode grid in the midplane at P =6 Torr and the applied voltage of 20 kV. The electron avalanche development is considered for two experimental situations during the last stage of breakdown: (i) with constant voltage and (ii) with decreasing voltage. For case (i), the subnanosecond current front rise is set by photons from the collisional excitation transfer reactions. For the case (ii), the energetic electrons swamp the cathode during voltage drop and provide the secondary electron emission for the subnanosecond current rise, observed in the experiment.

Effect of solar-cell junction geometry on open-circuit voltage

Science.gov (United States)

Weizer, V. G.; Godlewski, M. P.

1985-01-01

Simple analytical models have been found that adequately describe the voltage behavior of both the stripe junction and dot junction grating cells as a function of junction area. While the voltage in the former case is found to be insensitive to junction area reduction, significant voltage increases are shown to be possible for the dot junction cell. With regard to cells in which the junction area has been increased in a quest for better performance, it was found that (1) texturation does not affect the average saturation current density J0, indicating that the texturation process is equivalent to a simple extension of junction area by a factor of square root of 3 and (2) the vertical junction cell geometry produces a sizable decrease in J0 that, unfortunately, is more than offset by the effects of attendant areal increases.

Correlations between critical current density, j{sub c}, critical temperature, T{sub c}, and structural quality of Y{sub 1}B{sub 2}Cu{sub 3}O{sub 7-x} thin superconducting films

Energy Technology Data Exchange (ETDEWEB)

Chrzanowski, J.; Xing, W.B.; Atlan, D. [Simon Fraser Univ., British Columbia (Canada)] [and others

1994-12-31

Correlations between critical current density (j{sub c}) critical temperature (T{sub c}) and the density of edge dislocations and nonuniform strain have been observed in YBCO thin films deposited by pulsed laser ablation on (001) LaAlO{sub 3} single crystals. Distinct maxima in j{sub c} as a function of the linewidths of the (00{ell}) Bragg reflections and as a function of the mosaic spread have been found in the epitaxial films. These maxima in j{sub c} indicate that the magnetic flux lines, in films of structural quality approaching that of single crystals, are insufficiently pinned which results in a decreased critical current density. T{sub c} increased monotonically with improving crystalline quality and approached a value characteristic of a pure single crystal. A strong correlation between j{sub c} and the density of edge dislocations N{sub D} was found. At the maximum of the critical current density the density of edge dislocations was estimated to be N{sub D}{approximately}1-2 x 10{sup 9}/cm{sup 2}.

High-field quench behavior and dependence of hot spot temperature on quench detection voltage threshold in a Bi2Sr2CaCu2Ox coil

International Nuclear Information System (INIS)

Shen, Tengming; Ye, Liyang; Turrioni, Daniele; Li, Pei

2015-01-01

Small insert solenoids have been built using a multifilamentary Ag/Bi 2 Sr 2 CaCu 2 O x round wire insulated with a mullite sleeve (∼100 μm in thickness) and characterized in background fields to explore the quench behaviors and limits of Bi 2 Sr 2 CaCu 2 O x superconducting magnets, with an emphasis on assessing the impact of slow normal zone propagation on quench detection. Using heaters of various lengths to initiate a small normal zone, a coil was quenched safely more than 70 times without degradation, with the maximum coil temperature reaching 280 K. Coils withstood a resistive voltage of tens of mV for seconds without quenching, showing the high stability of these coils and suggesting that the quench detection voltage should be greater than 50 mV in order not to falsely trigger protection. The hot spot temperature for the resistive voltage of the normal zone to reach 100 mV increased from ∼40–∼80 K while increasing the operating wire current density J o from 89 A mm −2 to 354 A mm −2 , whereas for the voltage to reach 1 V, it increased from ∼60–∼140 K. This shows the increasing negative impact of slow normal zone propagation on quench detection with increasing J o and the need to limit the quench detection voltage to <1 V. These measurements, coupled with an analytical quench model, were used to assess the impact of the maximum allowable detection voltage and temperature upon quench detection on the quench protection, assuming a limit of the hot spot temperature to <300 K. (paper)

Current-voltage characteristics of quantum-point contacts in the closed-channel regime: Transforming the bias voltage into an energy scale

DEFF Research Database (Denmark)

Gloos, K.; Utko, P.; Aagesen, M.

2006-01-01

We investigate the I(V) characteristics (current versus bias voltage) of side-gated quantum-point contacts, defined in GaAs/AlxGa1-xAs heterostructures. These point contacts are operated in the closed-channel regime, that is, at fixed gate voltages below zero-bias pinch-off for conductance. Our....... Such a built-in energy-voltage calibration allows us to distinguish between the different contributions to the electron transport across the pinched-off contact due to thermal activation or quantum tunneling. The first involves the height of the barrier, and the latter also its length. In the model that we...

High-voltage, high-current, solid-state closing switch

Science.gov (United States)

Focia, Ronald Jeffrey

2017-08-22

A high-voltage, high-current, solid-state closing switch uses a field-effect transistor (e.g., a MOSFET) to trigger a high-voltage stack of thyristors. The switch can have a high hold-off voltage, high current carrying capacity, and high time-rate-of-change of current, di/dt. The fast closing switch can be used in pulsed power applications.

Magnetic Method to Characterize the Current Densities in Breaker Arc

International Nuclear Information System (INIS)

Machkour, Nadia

2005-01-01

The purpose of this research was to use magnetic induction measurements from a low voltage breaker arc, to reconstruct the arc's current density. The measurements were made using Hall effect sensors, which were placed close to, but outside the breaking device. The arc was modelled as a rectangular current sheet, composed of a mix of threadlike current segments and with a current density varying across the propagation direction. We found the magnetic induction of the arc is a convolution product of the current density, and a function depending on the breaker geometry and arc model. Using deconvolution methods, the current density in the electric arc was determined.The method is used to study the arc behavior into the breaker device. Notably, position, arc size, and electric conductivity could all be determined, and then used to characterize the arc mode, diffuse or concentrated, and study the condition of its mode changing

A high current density DC magnetohydrodynamic (MHD) micropump

NARCIS (Netherlands)

Homsy, Alexandra; Koster, Sander; Hogen-Koster, S.; Eijkel, Jan C.T.; van den Berg, Albert; Lucklum, F.; Verpoorte, E.; de Rooij, Nico F.

2005-01-01

This paper describes the working principle of a DC magnetohydrodynamic (MHD) micropump that can be operated at high DC current densities (J) in 75-µm-deep microfluidic channels without introducing gas bubbles into the pumping channel. The main design feature for current generation is a micromachined

A high current density DC magnetohydrodynamic (MHD) micropump

NARCIS (Netherlands)

Homsy, A; Koster, Sander; Eijkel, JCT; van den Berg, A; Lucklum, F; Verpoorte, E; de Rooij, NF

2005-01-01

This paper describes the working principle of a DC magnetohydrodynamic (MHD) micropump that can be operated at high DC current densities (J) in 75-mu m-deep microfluidic channels without introducing gas bubbles into the pumping channel. The main design feature for current generation is a

Radio frequency glow discharge source with integrated voltage and current probes used for evaluation of discharge parameters

International Nuclear Information System (INIS)

Wilken, L.; Hoffmann, V.; Wetzig, K.

2006-01-01

A radio frequency (rf) Grimm-type glow discharge source for the chemical analysis of solid samples, with integrated voltage and current probes, was developed. All elements of a plasma equivalent circuit are determined from the measured current-voltage characteristics. The procedure is based on the independent evaluation of the ion current and electron current region. The physical meaning of the parameters is investigated by comparisons with measurements from dc glow discharges. We found that the reduced rf current of the powered electrode is comparable to the reduced current in dc discharges. A formula is developed that corrects the reduced current due to gas heating. The sheath thickness at the powered rf electrode is evaluated and is between 75 and 1100 μm. The voltage of the bulk plasma is in the range 2-15 V, and the resistance is between 30 and 400 Ω. The bulk plasma consumes about 3% of the total power, and the reduced voltage is comparable to the reduced electrical field in the positive column of direct current discharges. The sheath voltage at the grounded electrode is in the range 25-100 V, the capacities are between 10 and 400 pF, and the resistances are in the range 100 Ω-5000 Ω. We also found invariants for the evaluated sheath parameters

Observation of dark pulses in 10 nm thick YBCO nanostrips presenting hysteretic current voltage characteristics

Science.gov (United States)

Ejrnaes, M.; Parlato, L.; Arpaia, R.; Bauch, T.; Lombardi, F.; Cristiano, R.; Tafuri, F.; Pepe, G. P.

2017-12-01

We have fabricated several 10 nm thick and 65 nm wide YBa2Cu3O7-δ (YBCO) nanostrips. The nanostrips with the highest critical current densities are characterized by hysteretic current voltage characteristics (IVCs) with a direct bistable switch from the zero-voltage to the finite voltage state. The presence of hysteretic IVCs allowed the observation of dark pulses due to fluctuations phenomena. The key role of the bistable behavior is its ability to transform a small disturbance (e.g. an intrinsic fluctuation) into a measurable transient signal, i.e. a dark pulse. On the contrary, in devices characterized by lower critical current density values, the IVCs are non-hysteretic and dark pulses have not been observed. To investigate the physical origin of the dark pulses, we have measured the bias current dependence of the dark pulse rate: the observed exponential increase with the bias current is compatible with mechanisms based on thermal activation of magnetic vortices in the nanostrip. We believe that the successful amplification of small fluctuation events into measurable signals in nanostrips of ultrathin YBCO is a milestone for further investigation of YBCO nanostrips for superconducting nanostrip single photon detectors and other quantum detectors for operation at higher temperatures.

Critical current in nonhomogeneous YBCO coated conductors

International Nuclear Information System (INIS)

Rostila, L; Mikkonen, R; Lehtonen, J

2008-01-01

The critical current of an YBCO tape is determined by the magnetic field inside the YBCO layer and the quality of YBCO material. In thick YBCO layers the average critical current density is reduced by the self-field and decreased material quality. In this paper the combined influence of the material nonhomogeneities and self-field on the critical current of YBCO tapes is scrutinised. First, the zero field critical current density was assumed to decrease along the YBCO thickness. Secondly, the possible defects created in the cutting of YBCO tapes were modelled as a function of lowered critical current density near the tape edges. In both cases the critical current was computed numerically with integral element method. The results suggest that the variation of zero field critical current density, J c0 , along the tape thickness does not effect on the critical current if the mean value of J c0 is kept constant. However, if J c0 is varied along the tape width the critical current can change due to the variated self-field. The computations can be used to determine when it is possible to evaluate the average zero field critical current density from a voltage-current measurement with an appropriate accuracy

Hysteretic current-voltage characteristics in RF-sputtered nanocrystalline TiO2 thin films

International Nuclear Information System (INIS)

Villafuerte, Manuel; Juarez, Gabriel; Heluani, Silvia P. de; Comedi, David

2007-01-01

We have measured the current-voltage characteristics at room temperature of a nanocrystalline TiO 2 thin film fabricated by reactive RF-sputtering deposition and sandwiched between ITO (indium-tin-oxide)-buffered glass substrate and an indium top electrode. The I-V characteristics are ohmic for low voltages and become non-linear, hysteretic and asymmetric as the voltage is increased. The system is shown to be well represented by two distinct resistance states in the non-ohmic region. Current transient evolutions were also measured for constant voltage excitations. The resistance is stable in time for voltages in the ohmic regime. In contrast, for voltages in the non-ohmic regime, the resistance has a small variation for a short period of time (order of tens seconds) and then increases with time. For those transients, long characteristic times (on the order of tens of minutes up to hours) were found. The behavior of the system is discussed on the basis of experimental results reported in the literature for similar systems and existing models for electric-field induced resistive switching

Study of the input-side subsurface reorganization vs. the outside current density in hydrogen permeation under constant cell voltage through iron membrane according to RHC concept

International Nuclear Information System (INIS)

DePetris-Wery, M.; Wery, S.; Catonne, J.C.

2010-01-01

In this work, hydrogen permeation tests were performed on pure iron membrane in 1 M sodium hydroxide at 298 K, subjected to hydrogen charging under 'quasi-potentiostatic' polarization conditions, i.e. constant cell voltage applied between the cathode (membrane entry side) and the anode (counter electrode), which is a typical situation during metal electrodeposition or cathodic degreasing on steel in metal finishing industry. Two consecutive charging-discharging runs were carried out. Prolonged hydrogen charging under quasi-potentiostatic polarization was investigated and the change of cathodic current density (i in ) chg and electrode potential (E in ) chg as well as permeation current density (i out ) chg were analysed. Three singularities were underlined for each experiment: (i) the curve (i in ) chg = f((E in ) chg ), illustrating the inverse of hydrogen charge resistance R HC -1 evolution which was negative, equal to zero and then became positive; (ii) quasi-periodic instabilities during the R HC -1 zero period, probably induced by atomic reorganizing due to subsurface hydrogen insertion in the input-side; (iii) the same ratio (i out ) chg /(i in ) chg = -6 x 10 -5 . During discharge runs, both sides of the membrane were polarized at the same potential (E in ) dischg = (E out ) dischg = -0.285 V/Hg/HgO/NaOH 1 M and the current densities, (i in ) dischg and (i out ) dischg which corresponded to the desorption rates of hydrogen, were measured. The following correlation (i out ) dischg vs.(i in ) dischg = -6 x 10 -5 was confirmed leading us to introduce the R HC -1 mirror concept to observe the input-side subsurface reorganization by the survey of its potential vs. outside current density during the hydrogen charge. Thus, this R HC -1 mirror concept showed: (i) a non-stop and irreversible progress in the subsurface reorganization during the two permeations; (ii) a probable structural evolution to a stable subsurface structure, the only condition of a real steady

Current-voltage characteristics of porous-silicon structures

International Nuclear Information System (INIS)

Diligenti, A.; Nannini, A.; Pennelli, G.; Pieri, F.; Fuso, F.; Allegrini, M.

1996-01-01

I-V DC characteristics have been measured on metal/porous-silicon structures. In particular, the measurements on metal/free-standing porous-silicon film/metal devices confirmed the result, already obtained, that the metal/porous-silicon interface plays a crucial role in the transport of any device. Four-contacts measurements on free-standing layers showed that the current linearly depends on the voltage and that the conduction process is thermally activated, the activation energy depending on the porous silicon film production parameters. Finally, annealing experiments performed in order to improve the conduction of rectifying contacts, are described

Effect of 50 and 80 MeV phosphorous ions on the contribution of interface and oxide state density in n-channel MOSFETs

Energy Technology Data Exchange (ETDEWEB)

Shinde, N.S.; Dhole, S.D.; Kanjilal, D.; Bhoraskar, V.N. E-mail: vnb@physics.unipune.ernet.in

1999-07-02

n-channel depletion MOS devices were irradiated with 50 and 80 MeV phosphorous ions, with different fluences varying in the range from 10{sup 11} to 10{sup 13} ions/cm{sup 2}. The pre and post irradiation I-V characteristics were measured and the corresponding threshold shift {delta}V{sub TH} was estimated. In both the cases, the drain current I{sub D} and the threshold voltage V{sub TH} were found to decrease with the ion fluence. The increase in the threshold voltage shift {delta}V{sub TH} with the ion fluence, was greater for the devices irradiated with 80 MeV ions than those irradiated with 50 MeV ions. The interface and oxide state densities were determined through the subthreshold voltage measurements. To separate the contributions of oxide and interface states towards the threshold voltage shift, the ion irradiated MOS devices were annealed at 150 deg. C. The threshold shift during annealing initially decreased and later increased with increasing annealing period. The rate of change of the interface states during annealing was higher than that of the oxide states. It was also found that depletion mode (normally ON) MOSFETs switched operation to enhancement mode (normally OFF)

Current-voltage characteristics of dendrimer light-emitting diodes

International Nuclear Information System (INIS)

Stevenson, S G; Samuel, I D W; Staton, S V; Knights, K A; Burn, P L; Williams, J H T; Walker, Alison B

2010-01-01

We have investigated current-voltage (I-V) characteristics of unipolar and bipolar organic diodes that use phosphorescent dendrimers as the emissive organic layer. Through simulation of the measured I-V characteristics we were able to determine the device parameters for each device structure studied, leading to a better understanding of injection and transport behaviour in these devices. It was found that the common practice of assuming injection barriers are equal to the difference between bare electrode work functions and molecular orbital levels is unsuitable for the devices considered here, particularly for gold contacts. The studies confirm that different aromatic units in the dendrons can give significant differences in the charge transporting properties of the dendrimers.

Current-voltage characteristics of dendrimer light-emitting diodes

Science.gov (United States)

Stevenson, S. G.; Samuel, I. D. W.; Staton, S. V.; Knights, K. A.; Burn, P. L.; Williams, J. H. T.; Walker, Alison B.

2010-09-01

We have investigated current-voltage (I-V) characteristics of unipolar and bipolar organic diodes that use phosphorescent dendrimers as the emissive organic layer. Through simulation of the measured I-V characteristics we were able to determine the device parameters for each device structure studied, leading to a better understanding of injection and transport behaviour in these devices. It was found that the common practice of assuming injection barriers are equal to the difference between bare electrode work functions and molecular orbital levels is unsuitable for the devices considered here, particularly for gold contacts. The studies confirm that different aromatic units in the dendrons can give significant differences in the charge transporting properties of the dendrimers.

Current-voltage characteristics of dendrimer light-emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Stevenson, S G; Samuel, I D W [Organic Semiconductor Centre, SUPA, School of Physics and Astronomy, University of St Andrews, North Haugh, St Andrews, Fife, KY16 9SS (United Kingdom); Staton, S V; Knights, K A; Burn, P L [Department of Chemistry, Chemistry Research Laboratory, 12 Mansfield Road, Oxford, OX1 3TA (United Kingdom); Williams, J H T; Walker, Alison B, E-mail: a.b.walker@bath.ac.u [Department of Physics, University of Bath, Bath, BA2 7AY (United Kingdom)

2010-09-29

We have investigated current-voltage (I-V) characteristics of unipolar and bipolar organic diodes that use phosphorescent dendrimers as the emissive organic layer. Through simulation of the measured I-V characteristics we were able to determine the device parameters for each device structure studied, leading to a better understanding of injection and transport behaviour in these devices. It was found that the common practice of assuming injection barriers are equal to the difference between bare electrode work functions and molecular orbital levels is unsuitable for the devices considered here, particularly for gold contacts. The studies confirm that different aromatic units in the dendrons can give significant differences in the charge transporting properties of the dendrimers.

Current and Voltage Conveyors in Current- and Voltage-Mode Precision Full-Wave Rectifiers

Directory of Open Access Journals (Sweden)

J. Koton

2011-04-01

Full Text Available In this paper new versatile precision full-wave rectifiers using current and/or voltage conveyors as active elements and two diodes are presented. The performance of these circuit solutions is analysed and compared to the opamp based precision rectifier. To analyze the behavior of the functional blocks, the frequency dependent RMS error and DC transient value are evaluated for different values of input voltage amplitudes. Furthermore, experimental results are given that show the feasibilities of the conveyor based rectifiers superior to the corresponding operational amplifier based topology.

Current-voltage curves of atomic-sized transition metal contacts: An explanation of why Au is ohmic and Pt is not

DEFF Research Database (Denmark)

Nielsen, S.K.; Brandbyge, Mads; Hansen, K.

2002-01-01

We present an experimental study of current-voltage (I-V) curves on atomic-sized Au and Pt contacts formed under cryogenic vacuum (4.2 K). Whereas I-V curves for Au are almost Ohmic, the conductance G=I/V for Pt decreases with increasing voltage, resulting in distinct nonlinear I-V behavior...

Study on paralleled inverters with current-sharing coupled inductors on J-TEXT Tokamak

Energy Technology Data Exchange (ETDEWEB)

Shao, J.; Rao, B., E-mail: borao@hust.edu.cn; Zhang, M.; Ma, S.X.; Liang, X.; Yu, K.X.; Pan, Y.

2016-12-15

Highlights: • A modification scheme of heating field power supply system for plasma current modulation. • High-power fast control power supply with multilevel cascade circuit. • Restraining circulating current with coupled inductors in cyclic symmetric structure. • Analysis on the topology with current-sharing coupled inductors. - Abstract: The coupled inductors in paralleled inverters are applied to restrain the high frequency circulating current on J-TEXT Tokamak. Compared with individual inductor, this method has the benefit of high voltage utilization, less volume and weight of the inductor. In this paper, circuit topology of coupled inductors in cyclic symmetry structure for steady-state operation is analyzed and then the design of the inductor is introduced. The maximum circulating current is related to number of parallel branch, DC side voltage, self-inductance of the inductor and the frequency of carrier wave. The simulation and prototype experiment results verify the design.

Generalized Bohm’s criterion and negative anode voltage fall in electric discharges

Energy Technology Data Exchange (ETDEWEB)

Londer, Ya. I.; Ul’yanov, K. N., E-mail: kulyanov@vei.ru [Lenin All-Russian Electrotechnical Institute (Russian Federation)

2013-10-15

The value of the voltage fall across the anode sheath is found as a function of the current density. Analytic solutions are obtained in a wide range of the ratio of the directed velocity of plasma electrons v{sub 0} to their thermal velocity v{sub T}. It is shown that the voltage fall in a one-dimensional collisionless anode sheath is always negative. At the small values of v{sub 0}/v{sub T}, the obtained expression asymptotically transforms into the Langmuir formula. Generalized Bohm’s criterion for an electric discharge with allowance for the space charge density ρ(0), electric field E(0), ion velocity v{sub i}(0), and ratio v{sub 0}/v{sub T} at the plasma-sheath interface is formulated. It is shown that the minimum value of the ion velocity v{sub i}{sup *}(0) corresponds to the vanishing of the electric field at one point inside the sheath. The dependence of v{sub i}{sup *} (0) on ρ(0), E(0), and v{sub 0}/v{sub T} determines the boundary of the existence domain of stationary solutions in the sheath. Using this criterion, the maximum possible degree of contraction of the electron current at the anode is determined for a short high-current vacuum arc discharge.

Generalized Bohm’s criterion and negative anode voltage fall in electric discharges

International Nuclear Information System (INIS)

Londer, Ya. I.; Ul’yanov, K. N.

2013-01-01

The value of the voltage fall across the anode sheath is found as a function of the current density. Analytic solutions are obtained in a wide range of the ratio of the directed velocity of plasma electrons v 0 to their thermal velocity v T . It is shown that the voltage fall in a one-dimensional collisionless anode sheath is always negative. At the small values of v 0 /v T , the obtained expression asymptotically transforms into the Langmuir formula. Generalized Bohm’s criterion for an electric discharge with allowance for the space charge density ρ(0), electric field E(0), ion velocity v i (0), and ratio v 0 /v T at the plasma-sheath interface is formulated. It is shown that the minimum value of the ion velocity v i * (0) corresponds to the vanishing of the electric field at one point inside the sheath. The dependence of v i * (0) on ρ(0), E(0), and v 0 /v T determines the boundary of the existence domain of stationary solutions in the sheath. Using this criterion, the maximum possible degree of contraction of the electron current at the anode is determined for a short high-current vacuum arc discharge

Analysis of Schottky Barrier Parameters and Current Transport Properties of V/p-Type GaN Schottky Junction at Low Temperatures

Science.gov (United States)

Asha, B.; Harsha, Cirandur Sri; Padma, R.; Rajagopal Reddy, V.

2018-05-01

The electrical characteristics of a V/p-GaN Schottky junction have been investigated by current-voltage (I-V) and capacitance-voltage (C-V) characteristics under the assumption of the thermionic emission (TE) theory in the temperature range of 120-280 K with steps of 40 K. The zero-bias barrier height (ΦB0), ideality factor (n), flat-band barrier height (ΦBF) and series resistance (R S) values were evaluated and were found to be strongly temperature dependent. The results revealed that the ΦB0 values increase, whereas n, ΦFB and R S values decrease, with increasing temperature. Using the conventional Richardson plot, the mean barrier height (0.39 eV) and Richardson constant (8.10 × 10-10 Acm-2 K-2) were attained. The barrier height inhomogeneities were demonstrated by assuming a Gaussian distribution function. The interface state density (N SS) values were found to decrease with increasing temperature. The reverse leakage current mechanism of the V/p-GaN Schottky junction was found to be governed by Poole-Frenkel emission at all temperatures.

High Voltage Resistive Divider Based on Cast Microwire in Glass Insulation on 6–24 kV Alternating Current of Commercial Frequency.

Directory of Open Access Journals (Sweden)

Juravleov A.

2008-12-01

Full Text Available It is presented the analysis and description of the construction of the high voltage resistive divider on the base of cast microwire in glass insulation on 6–24 kV alternating current of commercial frequency. It is presented the procedure of compensation of frequency error during the process of fabrication of divides and results of tests of the sample model of the divider as well.

Ga2O3 Schottky rectifiers with 1 ampere forward current, 650 V reverse breakdown and 26.5 MW.cm-2 figure-of-merit

Science.gov (United States)

Yang, Jiancheng; Ren, F.; Tadjer, Marko; Pearton, S. J.; Kuramata, A.

2018-05-01

A key goal for Ga2O3 rectifiers is to achieve high forward currents and high reverse breakdown voltages. Field-plated β-Ga2O3 Schottky rectifiers with area 0.01 cm2, fabricated on 10 μm thick, lightly-doped drift regions (1.33 x 1016 cm-3) on heavily-doped (3.6 x 1018 cm-3) substrates, exhibited forward current density of 100A.cm-2 at 2.1 V, with absolute current of 1 A at this voltage and a reverse breakdown voltage (VB) of 650V. The on-resistance (RON) was 1.58 x 10-2 Ω.cm2, producing a figure of merit (VB2/RON) of 26.5 MW.cm-2. The Schottky barrier height of the Ni was 1.04 eV, with an ideality factor of 1.02. The on/off ratio was in the range 3.3 x 106 - 5.7 x 109 for reverse biases between 5 and 100V. The reverse recovery time was ˜30 ns for switching from +2V to -5V. The results show the capability of β-Ga2O3 rectifiers to achieve exceptional performance in both forward and reverse bias conditions.

J/$\\psi$ production as a function of charged-particle pseudorapidity density in p-Pb collisions at $\\sqrt{s_{\\rm NN}} = 5.02$ TeV

OpenAIRE

Adamová, D.; Aggarwal, Madan Mohan; Alam, Sk Noor; Biswas, Rathijit; Zardoshti, Nima; Zarochentsev, Andrey; Zavada, Petr; Zavyalov, Nikolay; Zbroszczyk, Hanna Paulina; Zhalov, Mikhail; Zhang, Haitao; Zhang, Xiaoming; Zhang, Yonghong; Chunhui, Zhang; Biswas, Saikat

2018-01-01

We report measurements of the inclusive J/ ψ yield and average transverse momentum as a function of charged-particle pseudorapidity density dNch/dη in p–Pb collisions at sNN=5.02TeV with ALICE at the LHC. The observables are normalised to their corresponding averages in non-single diffractive events. An increase of the normalised J/ ψ yield with normalised dNch/dη , measured at mid-rapidity, is observed at mid-rapidity and backward rapidity. At forward rapidity, a saturation of the relative y...

Magnetic resonance electrical impedance tomography (MREIT): conductivity and current density imaging

International Nuclear Information System (INIS)

Seo, Jin Keun; Kwon, Ohin; Woo, Eung Je

2005-01-01

This paper reviews the latest impedance imaging technique called Magnetic Resonance Electrical Impedance Tomography (MREIT) providing information on electrical conductivity and current density distributions inside an electrically conducting domain such as the human body. The motivation for this research is explained by discussing conductivity changes related with physiological and pathological events, electromagnetic source imaging and electromagnetic stimulations. We briefly summarize the related technique of Electrical Impedance Tomography (EIT) that deals with cross-sectional image reconstructions of conductivity distributions from boundary measurements of current-voltage data. Noting that EIT suffers from the ill-posed nature of the corresponding inverse problem, we introduce MREIT as a new conductivity imaging modality providing images with better spatial resolution and accuracy. MREIT utilizes internal information on the induced magnetic field in addition to the boundary current-voltage measurements to produce three-dimensional images of conductivity and current density distributions. Mathematical theory, algorithms, and experimental methods of current MREIT research are described. With numerous potential applications in mind, future research directions in MREIT are proposed

Fabrication of n-ZnO/ p-Si (100) and n-ZnO:Al/ p-Si (100) Heterostructures and Study of Current-Voltage, Capacitance-Voltage and Room-Temperature Photoluminescence

Science.gov (United States)

Shah, M. A. H.; Khan, M. K. R.; Tanveer Karim, A. M. M.; Rahman, M. M.; Kamruzzaman, M.

2018-01-01

Heterojunction diodes of n-ZnO/ p-Si (100) and n-ZnO:Al/ p-Si (100) were fabricated by spray pyrolysis technique. X-ray diffraction (XRD), energy dispersive x-ray spectroscopy (EDX), and field emission scanning electron microscopy (FESEM) were used to characterize the as-prepared samples. The XRD pattern indicates the hexagonal wurzite structure of zinc oxide (ZnO) and Al-doped ZnO (AZO) thin films grown on Si (100) substrate. The compositional analysis by EDX indicates the presence of Al in the AZO structure. The FESEM image indicates the smooth and compact surface of the heterostructures. The current-voltage characteristics of the heterojunction confirm the rectifying diode behavior at different temperatures and illumination intensities. For low forward bias voltage, the ideality factors were determined to be 1.24 and 1.38 for un-doped and Al-doped heterostructures at room temperature (RT), respectively, which indicates the good diode characteristics. The capacitance-voltage response of the heterojunctions was studied for different oscillation frequencies. From the 1/ C 2- V plot, the junction built-in potentials were found 0.30 V and 0.40 V for un-doped and Al-doped junctions at RT, respectively. The differences in built-in potential for different heterojunctions indicate the different interface state densities of the junctions. From the RT photoluminescence (PL) spectrum of the n-ZnO/ p-Si (100) heterostructure, an intense main peak at near band edge (NBE) 378 nm (3.28 eV) and weak deep-level emissions (DLE) centered at 436 nm (2.84 eV) and 412 nm (3.00 eV) were observed. The NBE emission is attributed to the radiative recombination of the free and bound excitons and the DLE results from the radiative recombination through deep level defects.

OH density measured by PLIF in a nanosecond atmospheric pressure diffuse discharge in humid air under steep high voltage pulses

Science.gov (United States)

Ouaras, K.; Magne, L.; Pasquiers, S.; Tardiveau, P.; Jeanney, P.; Bournonville, B.

2018-04-01

The spatiotemporal distributions of the OH radical density are measured using planar laser induced fluorescence in the afterglow of a nanosecond diffuse discharge at atmospheric pressure in humid air. The diffuse discharge is generated between a pin and a grounded plate electrodes within a gap of 18 mm. The high voltage pulse applied to the pin ranges from 65 to 85 kV with a rise time of 2 ns. The specific electrical energy transferred to the gas ranges from 5 to 40 J l‑1. The influence of H2O concentration is studied from 0.5% to 1.5%. An absolute calibration of OH density is performed using a six-level transient rate equation model to simulate the dynamics of OH excitation by the laser, taking into account collisional processes during the optical pumping and the fluorescence. Rayleigh scattering measurements are used to achieve the geometrical part of the calibration. A local maximum of OH density is found in the pin area whatever the operating conditions. For 85 kV and 1% of H2O, this peak reaches a value of 2.0 × 1016 cm‑3 corresponding to 8% of H2O dissociation. The temporal decay of the spatially averaged OH density is found to be similar as in the afterglow of a homogeneous photo-triggered discharge for which a self-consistent modeling is done. These tools are then used to bring discussion elements on OH kinetics.

Critical current densities and flux creep rate in Co-doped BaFe2As2 with columnar defects introduced by heavy-Ion irradiation

International Nuclear Information System (INIS)

Nakajima, Y.; Tsuchiya, Y.; Taen, T.; Yagyuda, H.; Tamegai, T.; Okayasu, S.; Sasase, M.; Kitamura, H.; Murakami, T.

2010-01-01

We report the formation of columnar defects in Co-doped BaFe 2 As 2 single crystals with different heavy-ion irradiations. The formation of columnar defects by 200 MeV Au ion irradiation is confirmed by transmission electron microscopy and their density is about 40% of the irradiation dose. Magneto-optical imaging and bulk magnetization measurements reveal that the critical current density J c is enhanced in the 200 MeV Au and 800 MeV Xe ion irradiated samples while J c is unchanged in the 200 MeV Ni ion irradiated sample. We also find that vortex creep rates are strongly suppressed by the columnar defects. We compare the effect of heavy-ion irradiation into Co-doped BaFe 2 As 2 and cuprate superconductors.

Power cables with extruded insulation and their accessories for rated voltages from 1 kV (Um = 1,2 kV) up to 30 kV (Um = 36 kV) : Part 2: cables for rated voltages from 6 kV (Um = 7,2 kV) up to 30 kV (Um = 36 kV)

CERN Document Server

International Electrotechnical Commission. Geneva

2005-01-01

Power cables with extruded insulation and their accessories for rated voltages from 1 kV (Um = 1,2 kV) up to 30 kV (Um = 36 kV) : Part 2: cables for rated voltages from 6 kV (Um = 7,2 kV) up to 30 kV (Um = 36 kV)

Development and use of 60 kV, and 150 kV floating deck modulators for high voltage protection of multi-megawatt ion beam accelerators

International Nuclear Information System (INIS)

Barber, G.C.; Ponte, N.S.; Schilling, G.

1977-01-01

Extraction currents of 60 A at 40 kV have been produced by utilizing a 60 kV floating deck modulator interfaced to a high voltage power supply. The modulator is operated in a series mode to repetitively pulse power to the ion beam accelerator. Current monitoring and other protective circuits provide interrupt commands to the series switch tube when faults occur. The constant current characteristics of the water cooled tetrode and the rapid response of the protective circuits effectively limit the fault energy to the ion source. Three of the 60 kV decks have been modified and stacked in a series configuration to supply 150 kV, 50 A pulses. This system supplies power for development of higher-energy multi-grid sources. In this system attention has been focused on forced voltage sharing of the three decks and on protective circuits for fault conditions. All control signal processing and conditioning is performed at ground level. Fiber optic links are used to interface with the high potential associated with the floating decks. A shunt modulator incorporated with this system provides regulation of the voltage to the ion source gradient grid. Future modulator development includes a system to deliver 100 A at 80 kV

DAQ system for low density plasma parameters measurement

International Nuclear Information System (INIS)

Joshi, Rashmi S.; Gupta, Suryakant B.

2015-01-01

In various cases where low density plasmas (number density ranges from 1E4 to 1E6 cm -3 ) exist for example, basic plasma studies or LEO space environment measurement of plasma parameters becomes very critical. Conventional tip (cylindrical) Langmuir probes often result into unstable measurements in such lower density plasma. Due to larger surface area, a spherical Langmuir probe is used to measure such lower plasma densities. Applying a sweep voltage signal to the probe and measuring current values corresponding to these voltages gives V-I characteristics of plasma which can be plotted on a digital storage oscilloscope. This plot is analyzed for calculating various plasma parameters. The aim of this paper is to measure plasma parameters using a spherical Langmuir probe and indigenously developed DAQ system. DAQ system consists of Keithley source-meter and a host system connected by a GPIB interface. An online plasma parameter diagnostic system is developed for measuring plasma properties for non-thermal plasma in vacuum. An algorithm is developed using LabVIEW platform. V-I characteristics of plasma are plotted with respect to different filament current values and different locations of Langmuir probe with reference to plasma source. V-I characteristics is also plotted for forward and reverse voltage sweep generated programmatically from the source meter. (author)

Calculation of voltages and currents induced in the vacuum vessel of ASDEX by plasma disruptions

International Nuclear Information System (INIS)

Preis, H.

1978-01-01

An approximation method is used to analyze the electromagnetic diffusion process induced in the walls of the ASDEX vacuum vessel by plasma disruptions. For this purpose the rotational-symmetric vessel is regarded as N = 82 circular conductors connected in parallel and inductively coupled with one another and with the plasma. The transient currents and voltages occurring in this circuit are calculated with computer programs. From the calculated currents it is possible to determine the time behavior of the distributions of the current density and magnetic force density in the vessel walls. (orig.) [de

The effect of applied control strategy on the current-voltage correlation of a solid oxide fuel cell stack during dynamic operation

Science.gov (United States)

Szmyd, Janusz S.; Komatsu, Yosuke; Brus, Grzegorz; Ghigliazza, Francesco; Kimijima, Shinji; Ściążko, Anna

2014-09-01

This paper discusses the transient characteristics of the planar type SOFC cell stack, of which the standard output is 300 W. The transient response of the voltage to the manipulation of an electric current was investigated. The effects of the response and of the operating condition determined by the operating temperature of the stack were studied by mapping a current-voltage (I-V) correlation. The current-based fuel control (CBFC) was adopted for keeping the fuel utilization factor at constant while the value of the electric current was ramped at the constant rate. The present experimental study shows that the transient characteristics of the cell voltage are determined by primarily the operating temperature caused by the manipulation of the current. Particularly, the slope of the I-V curve and the overshoot found on the voltage was remarkably influenced by the operating temperature. The different values of the fuel utilization factor influence the height of the settled voltages. The CBFC has significance in determining the slope of the I-V characteristic, but the different values ofthe fuel utilization factor does not affect the slope as the operating temperature does. The CBFC essentially does not alter the amplitude of the overshoot on the voltage response, since this is dominated by the operating temperature and its change is caused by manipulating the current.

The effect of applied control strategy on the current-voltage correlation of a solid oxide fuel cell stack during dynamic operation

Directory of Open Access Journals (Sweden)

Szmyd Janusz S.

2014-09-01

Full Text Available This paper discusses the transient characteristics of the planar type SOFC cell stack, of which the standard output is 300 W. The transient response of the voltage to the manipulation of an electric current was investigated. The effects of the response and of the operating condition determined by the operating temperature of the stack were studied by mapping a current-voltage (I-V correlation. The current-based fuel control (CBFC was adopted for keeping the fuel utilization factor at constant while the value of the electric current was ramped at the constant rate. The present experimental study shows that the transient characteristics of the cell voltage are determined by primarily the operating temperature caused by the manipulation of the current. Particularly, the slope of the I-V curve and the overshoot found on the voltage was remarkably influenced by the operating temperature. The different values of the fuel utilization factor influence the height of the settled voltages. The CBFC has significance in determining the slope of the I-V characteristic, but the different values ofthe fuel utilization factor does not affect the slope as the operating temperature does. The CBFC essentially does not alter the amplitude of the overshoot on the voltage response, since this is dominated by the operating temperature and its change is caused by manipulating the current.

A rugged 650 V SOI-based high-voltage half-bridge IGBT gate driver IC for motor drive applications

Science.gov (United States)

Hua, Qing; Li, Zehong; Zhang, Bo; Chen, Weizhong; Huang, Xiangjun; Feng, Yuxiang

2015-05-01

This paper proposes a rugged high-voltage N-channel insulated gate bipolar transistor (IGBT) gate driver integrated circuit. The device integrates a high-side and a low-side output stages on a single chip, which is designed specifically for motor drive applications. High-voltage level shift technology enables the high-side stage of this device to operate up to 650 V. The logic inputs are complementary metal oxide semiconductor (CMOS)/transistor transistor logic compatible down to 3.3 V. Undervoltage protection functionality with hysteresis characteristic has also been integrated to enhance the device reliability. The device is fabricated in a 1.0 μm, 650 V high-voltage bipolar CMOS double-diffused metal oxide semiconductor (BCD) on silicon-on-insulator (SOI) process. Deep trench dielectric isolation technology is employed to provide complete electrical isolation with advantages such as reduced parasitic effects, excellent noise immunity and low leakage current. Experimental results show that the isolation voltage of this device can be up to approximately 779 V at 25°C, and the leakage current is only 5 nA at 650 V, which is 15% higher and 67% lower than the conventional ones. In addition, it delivers an excellent thermal stability and needs very low quiescent current and offers a high gate driver capability which is needed to adequately drive IGBTs that have large input capacitances.

Temperature dependent charge transport studies across thermodynamic glass transition in P3HT:PCBM bulk heterojunction: insight from J-V and impedance spectroscopy

Science.gov (United States)

Sarkar, Atri; Rahaman, Abdulla Bin; Banerjee, Debamalya

2018-03-01

Temperature dependent charge transport properties of P3HT:PCBM bulk heterojunction are analysed by dc and ac measurements under dark conditions across a wide temperature range of 110-473 K, which includes the thermodynamic glass transition temperature (Tg ˜320 K) of the system. A change from Ohmic conduction to space charge limited current conduction at higher (⩾1.2 V) applied bias voltages above  ⩾200 K is observed from J-V characteristics. From capacitance-voltage (C-V) measurement at room temperature, the occurrence of a peak near the built-in voltage is observed below the dielectric relaxation frequency, originating from the competition between drift and diffusion driven motions of charges. Carrier concentration (N) is calculated from C-V measurements taken at different temperatures. Room temperature mobility values at various applied bias voltages are in accordance with that obtained from transient charge extraction by linearly increasing voltage measurement. Sample impedance is measured over five decades of frequency across temperature range by using lock-in detection. This data is used to extract temperature dependence of carrier mobility (μ), and dc conductivity (σ_dc ) which is low frequency extrapolation of ac conductivity. An activation energy of  ˜126 meV for the carrier hopping process at the metal-semiconductor interface is estimated from temperature dependence of σ_dc . Above T g, μ levels off to a constant value, whereas σ_dc starts to decrease after a transition knee at T g that can be seen as a combined effect of changes in μ and N. All these observed changes across T g can be correlated to enhanced polymer motion above the glass transition.

Quasiparticle conductance-voltage characteristics for break junctions involving d-wave superconductors: charge-density-wave effects.

Science.gov (United States)

Ekino, T; Gabovich, A M; Suan Li, Mai; Szymczak, H; Voitenko, A I

2017-12-20

Quasiparticle tunnel conductance-voltage characteristics (CVCs), [Formula: see text], were calculated for break junctions (BJs) made up of layered d-wave superconductors partially gapped by charge-density waves (CDWs). The current is assumed to flow in the ab-plane of electrodes. The influence of CDWs is analyzed by comparing the resulting CVCs with CVCs calculated for BJs made up of pure d-wave superconductors with relevant parameters. The main CDW-effects were found to be the appearance of new CVC peculiarities and the loss of CVC symmetry with respect to the V-sign. Tunnel directionality was shown to be one of the key factors in the formation of [Formula: see text] dependences. In particular, the orientation of electrodes with respect to the current channel becomes very important. As a result, [Formula: see text] can acquire a large variety of forms similar to those for tunnel junctions between superconductors with s-wave, d-wave, and mixed symmetry of their order parameters. The diversity of peculiarities is especially striking at finite temperatures. In the case of BJs made up of pure d-wave superconductors, the resulting CVC can include a two-peak gap-driven structure. The results were compared with the experimental BJ data for a number of high-T c oxides. It was shown that the large variety of the observed current-voltage characteristics can be interpreted in the framework of our approach. Thus, quasiparticle tunnel currents in the ab-plane can be used as an additional mean to detect CDWs competing with superconductivity in cuprates or other layered superconductors.

Observation of Sinusoidal Voltage Behaviour in Silver Doped YBCO

Science.gov (United States)

Altinkok, Atilgan; Olutas, Murat; Kilic, Kivilcim; Kilic, Atilla

The influence of bi-directional square wave (BSW) current was investigated on the evolution of the V - t curves at different periods (P) , temperatures and external magnetic fields. It was observed that slow transport relaxation measurements result in regular sinusoidal voltage oscillations which were discussed mainly in terms of the dynamic competition between pinning and depinning.The symmetry in the voltage oscillations was attributed to the elastic coupling between the flux lines and the pinning centers along grain boundaries and partly inside the grains. This case was also correlated to the equality between flux entry and exit along the YBCO/Ag sample during regular oscillations. It was shown that the voltage oscillations can be described well by an empirical expression V (t) sin(wt + φ) . We found that the phase angle φgenerally takes different values for the repetitive oscillations. Fast Fourier Transform analysis of the V - t oscillations showed that the oscillation period is comparable to that (PI) of the BSW current. This finding suggests a physical mechanism associated with charge density waves (CDWs), and, indeed, the weakly pinned flux line system in YBCO/Ag resembles the general behavior of CDWs. At certain values of PI, amplitude of BSW current, H and T, the YBCO/Ag sample behaves like a double-integrator, since it converts the BSW current to sinusoidal voltage oscillations in time.

3.0 V High Energy Density Symmetric Sodium-Ion Battery: Na4V2(PO4)3∥Na3V2(PO4)3.

Science.gov (United States)

Yao, Xuhui; Zhu, Zixuan; Li, Qi; Wang, Xuanpeng; Xu, Xiaoming; Meng, Jiashen; Ren, Wenhao; Zhang, Xinhe; Huang, Yunhui; Mai, Liqiang

2018-03-28

Symmetric sodium-ion batteries (SIBs) are considered as promising candidates for large-scale energy storage owing to the simplified manufacture and wide abundance of sodium resources. However, most symmetric SIBs suffer from suppressed energy density. Here, a superior congeneric Na 4 V 2 (PO 4 ) 3 anode is synthesized via electrochemical preintercalation, and a high energy density symmetric SIB (Na 3 V 2 (PO 4 ) 3 as a cathode and Na 4 V 2 (PO 4 ) 3 as an anode) based on the deepened redox couple of V 4+ /V 2+ is built for the first time. When measured in half cell, both electrodes show stabilized electrochemical performance (over 3000 cycles). The symmetric SIBs exhibit an output voltage of 3.0 V and a cell-level energy density of 138 W h kg -1 . Furthermore, the sodium storage mechanism under the expanded measurement range of 0.01-3.9 V is disclosed through an in situ X-ray diffraction technique.

Time-evolution of photon heat current through series coupled two mesoscopic Josephson junction devices

Science.gov (United States)

Lu, Wen-Ting; Zhao, Hong-Kang; Wang, Jian

2018-03-01

Photon heat current tunneling through a series coupled two mesoscopic Josephson junction (MJJ) system biased by dc voltages has been investigated by employing the nonequilibrium Green’s function approach. The time-oscillating photon heat current is contributed by the superposition of different current branches associated with the frequencies of MJJs ω j (j = 1, 2). Nonlinear behaviors are exhibited to be induced by the self-inductance, Coulomb interaction, and interference effect relating to the coherent transport of Cooper pairs in the MJJs. Time-oscillating pumping photon heat current is generated in the absence of temperature difference, while it becomes zero after time-average. The combination of ω j and Coulomb interactions in the MJJs determines the concrete heat current configuration. As the external and intrinsic frequencies ω j and ω 0 of MJJs match some specific combinations, resonant photon heat current exhibits sinusoidal behaviors with large amplitudes. Symmetric and asymmetric evolutions versus time t with respect to ω 1 t and ω 2 t are controlled by the applied dc voltages of V 1 and V 2. The dc photon heat current formula is a special case of the general time-dependent heat current formula when the bias voltages are settled to zero. The Aharonov-Bohm effect has been investigated, and versatile oscillation structures of photon heat current can be achieved by tuning the magnetic fluxes threading through separating MJJs.

Frequency and voltage dependent electrical responses of poly(triarylamine) thin film-based organic Schottky diode

Science.gov (United States)

Anuar Mohamad, Khairul; Tak Hoh, Hang; Alias, Afishah; Ghosh, Bablu Kumar; Fukuda, Hisashi

2017-11-01

A metal-organic-metal (MOM) type Schottky diode based on poly (triarylamine) (PTAA) thin films has been fabricated by using the spin coating method. Investigation of the frequency dependent conductance-voltage (G-V-f) and capacitance-voltage (C-V-f) characteristics of the ITO/PTAA/Al MOM type diode were carried out in the frequency range from 12 Hz to 100 kHz using an LCR meter at room temperature. The frequency and bias voltage dependent electrical response were determined by admittance-based measured method in terms of an equivalent circuit model of the parallel combination of resistance and capacitance (RC circuit). Investigation revealed that the conductance is frequency and a bias voltage dependent in which conductance continuous increase as the increasing frequency, respectively. Meanwhile, the capacitance is dependent on frequency up to a certain value of frequency (100 Hz) but decreases at high frequency (1 - 10 kHz). The interface state density in the Schottky diode was determined from G-V and C-V characteristics. The interface state density has values almost constant of 2.8 x 1012 eV-1cm-2 with slightly decrease by increasing frequencies. Consequently, both series resistance and interface trap density were found to decrease with increasing frequency. The frequency dependence of the electrical responses is attributed the distribution density of interface states that could follow the alternating current (AC) signal.

Current-Voltage Characteristics of Nb2O5 nanoporous via light illumination

Science.gov (United States)

Samihah Khairir, Nur; Rani, Rozina Abdul; Fazlida Hanim Abdullah, Wan; Hafiz Mamat, Mohamad; Kadir, Rosmalini Abdul; Rusop, M.; Sabirin Zoolfakar, Ahmad

2018-03-01

This work discussed the effect of light on I-V characteristics of anodized niobium pentoxide (Nb2O5) which formed nanoporous structure film. The structure was synthesized by anodizing niobium foils in glycerol based solution with 10 wt% supplied by two different voltages, 5V and 10V. The anodized foils that contained Nb2O5 film were then annealed to obtain an orthorhombic phase for 30 minutes at 450°C. The metal contact used for I-V testing was platinum (Pt) and it was deposited using thermal evaporator at 30nm thickness. I-V tests were conducted under different condition; dark and illumination to study the effect of light on I-V characteristics of anodized nanoporous Nb2O5. Higher anodization voltage and longer anodization time resulted in higher pore dispersion and larger pore size causing the current to increase. The increase of conductivity in I-V behaviour of Nb2O5 device is also affected by the illumination test as higher light intensity caused space charge region width to increase, thus making it easier for electron transfer between energy band gap.

A compact 100 kV high voltage glycol capacitor.

Science.gov (United States)

Wang, Langning; Liu, Jinliang; Feng, Jiahuai

2015-01-01

A high voltage capacitor is described in this paper. The capacitor uses glycerol as energy storage medium, has a large capacitance close to 1 nF, can hold off voltages of up to 100 kV for μs charging time. Allowing for low inductance, the capacitor electrode is designed as coaxial structure, which is different from the common structure of the ceramic capacitor. With a steady capacitance at different frequencies and a high hold-off voltage of up to 100 kV, the glycol capacitor design provides a potential substitute for the ceramic capacitors in pulse-forming network modulator to generate high voltage pulses with a width longer than 100 ns.

Dark Current And Voltage Measurements Of Metal-Organic-Semiconductor (M-Or-S) Diode

International Nuclear Information System (INIS)

Adianto

1996-01-01

. Some Metal-Organic-Semiconductor (M-Or-S) thin film diodes, constructed with an organic polymer (polymerized toluene) as an active component has been successfully fabricated. The thin film M-Or-S diodes were fabricated on an n-type silicon with resistivity of 250-500 Ocm and p type silicon with resistivity of 10-20 Ocm as a substrate with polymerized toluene used as insulator. When deposited on silicon wafers with electrode of evaporated Ni on the n-type silicon and evaporated Au as the electrode on the polymerized toluene film, the electronic devices of Metal-Organic- Semiconductor (M-Or-S) type can be produced with one of its characteristics is that their light sensitivity. A plasma ion deposition system was constructed and used to deposit organic monomeric substance (toluene) that functioned as an isolator between semiconductor and the evaporated metal electrodes. The current-voltage measurements for different configurations of M-Or-S devices were carried out to determine the current-voltage (1-V) characteristics for M-Or-S devices with different materials and thicknesses. In addition to the 1-V measurement mentioned before, 1-V measurements of the devices were also carried out by using a curve tracer oscilloscope, and the picture of the effective parameters of each of the device could be taken by using a polaroid camera. Since the devices are very sensitive to light, the devices were all tested in a black-box which was covered by a black cloth to make sure that there was no light coming through. The experimental results for p- and n-type silicon substrates showed that an M-Or-S diode with n-type gave a higher breakdown voltage than that p- type silicon. In addition, the reverse bias breakdown voltage increased as the thickness of the thin film increased in the range of 50 -2500 V/μm

Photocarrier radiometry for predicting the degradation of electrical parameters of monocrystalline silicon (c-Si) solar cell irradiated by 100 KeV proton beams

International Nuclear Information System (INIS)

Song, P.; Liu, J.Y.; Yuan, H.M.; Oliullah, Md.; Wang, F.; Wang, Y.

2016-01-01

In this study, the monocrystalline silicon (c-Si) solar cell irradiated by 100 KeV proton beams at various fluences is investigated. A one-dimensional two-layer carrier density wave model has been developed to estimate the minority carrier lifetime of n-region and p-region of the non-irradiated c-Si solar cell by best fitting with the experimental photocarrier radiometry (PCR) signal (the amplitude and the phase). Furthermore, the lifetime is used to determine the initial defect density of the quasi-neutral region (QNR) of the solar cell to predict its I–V characteristics. The theoretically predicted short-circuit current density (J_s_c), and open-circuit voltage (V_o_c) of the non-irradiated samples are in good agreement with experiment. Then a three-region defect distribution model for the c-Si solar cell irradiated by proton beams is carried out to describe the defect density distribution according to Monte Carlo simulation results and the initial defect density of the non-irradiated sample. Finally, we find that the electrical measurements of J_s_c and V_o_c of the solar cells irradiated at different fluences using 100 KeV proton beams are consistent with the PCR predicting results.

Photocarrier radiometry for predicting the degradation of electrical parameters of monocrystalline silicon (c-Si) solar cell irradiated by 100 KeV proton beams

Energy Technology Data Exchange (ETDEWEB)

Song, P. [School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001 (China); Liu, J.Y., E-mail: ljywlj@hit.edu.cn [School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001 (China); State Key Laboratory of Robotics and System (HIT), Harbin 150001 (China); Yuan, H.M.; Oliullah, Md.; Wang, F. [School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001 (China); Wang, Y., E-mail: songpengkevin@126.com [School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001 (China); State Key Laboratory of Robotics and System (HIT), Harbin 150001 (China)

2016-09-15

In this study, the monocrystalline silicon (c-Si) solar cell irradiated by 100 KeV proton beams at various fluences is investigated. A one-dimensional two-layer carrier density wave model has been developed to estimate the minority carrier lifetime of n-region and p-region of the non-irradiated c-Si solar cell by best fitting with the experimental photocarrier radiometry (PCR) signal (the amplitude and the phase). Furthermore, the lifetime is used to determine the initial defect density of the quasi-neutral region (QNR) of the solar cell to predict its I–V characteristics. The theoretically predicted short-circuit current density (J{sub sc}), and open-circuit voltage (V{sub oc}) of the non-irradiated samples are in good agreement with experiment. Then a three-region defect distribution model for the c-Si solar cell irradiated by proton beams is carried out to describe the defect density distribution according to Monte Carlo simulation results and the initial defect density of the non-irradiated sample. Finally, we find that the electrical measurements of J{sub sc} and V{sub oc} of the solar cells irradiated at different fluences using 100 KeV proton beams are consistent with the PCR predicting results.

Thermal instability and current-voltage scaling in superconducting fault current limiters

Energy Technology Data Exchange (ETDEWEB)

Zeimetz, B [Department of Materials Science and Metallurgy, Cambridge University, Pembroke Street, Cambridge CB1 3QZ (United Kingdom); Tadinada, K [Department of Engineering, Cambridge University, Trumpington Road, Cambridge CB2 1PZ (United Kingdom); Eves, D E [Department of Engineering, Cambridge University, Trumpington Road, Cambridge CB2 1PZ (United Kingdom); Coombs, T A [Department of Engineering, Cambridge University, Trumpington Road, Cambridge CB2 1PZ (United Kingdom); Evetts, J E [Department of Materials Science and Metallurgy, Cambridge University, Pembroke Street, Cambridge CB1 3QZ (United Kingdom); Campbell, A M [Department of Engineering, Cambridge University, Trumpington Road, Cambridge CB2 1PZ (United Kingdom)

2004-04-01

We have developed a computer model for the simulation of resistive superconducting fault current limiters in three dimensions. The program calculates the electromagnetic and thermal response of a superconductor to a time-dependent overload voltage, with different possible cooling conditions for the surfaces, and locally variable superconducting and thermal properties. We find that the cryogen boil-off parameters critically influence the stability of a limiter. The recovery time after a fault increases strongly with thickness. Above a critical thickness, the temperature is unstable even for a small applied AC voltage. The maximum voltage and maximum current during a short fault are correlated by a simple exponential law.

Voltages and electric currents mensuration - class 15 kV - for systems electro-optical and magneto-optical; Medicao de tensoes e correntes - classe 15 kv - por sistemas eletro-opticos e magneto-opticos

Energy Technology Data Exchange (ETDEWEB)

Costa, Marcos Rodrigues

1996-07-01

The technical feasibility of the development of a novel system measuring of high voltage and current in 15 kV distribution lines was presented. The system is basically the combination of two other systems, one conventional and other electro-optical. The conventional subsystem is based on voltage dividers and magnetic rings while the electro-optical subsystem uses LEDs, resistors, optical-fibers and photodetectors. The system was completely tested in laboratory and its main characteristics are low price, easy of installation and flexibility. Two software for data acquisition by GPIB and A/D boards were also developed. The can provide reports on voltages, currents, power and phase-power. (author)

Measurements of Voltage Harmonics in 400 kV Transmission Network

Directory of Open Access Journals (Sweden)

Ryszard Pawełek

2014-06-01

Full Text Available The paper deals with the analysis of voltage harmonics measurements performed in the 400 kV transmission network. The voltage was measured by means of three transducers: resistive voltage divider, inductive measuring transformer and capacitive voltage measuring transformer. Instrument errors were estimated for measuring transformers with reference to the harmonic values obtained from the voltage divider.

Mitigation of Voltage and Current Harmonics in Grid-Connected Microgrids

DEFF Research Database (Denmark)

Savaghebi, Mehdi; Guerrero, Josep M.; Jalilian, Alireza

2012-01-01

In this paper, a control approach is proposed for selective compensation of main voltage and current harmonics in grid-connected microgrids. Two modes of compensation are considered, i.e. voltage and current compensation modes. In the case that sensitive loads are connected to the point of common...... coupling (PCC), voltage compensation mode is activated in order to provide a high voltage quality at PCC. Otherwise, grid current harmonics are mitigated (current compensation mode) in order to avoid excessive harmonic supply by the grid. In both modes, harmonic compensation is achieved through proper...... control of distributed generators (DGs) interface converters. The compensation effort of each harmonic is shared considering the corresponding current harmonic supplied by the DGs. The control system of each DG comprises harmonic compensator, power controllers, voltage and current controllers and virtual...

GeV Detection of HESS J0632+057

Energy Technology Data Exchange (ETDEWEB)

Li, Jian; Torres, Diego F.; Wilhelmi, Emma de Oña [Institute of Space Sciences (CSIC–IEEC), Campus UAB, Carrer de Magrans s/n, E-08193 Barcelona (Spain); Cheng, K.-S. [Department of Physics, University of Hong Kong, Pokfulam Road, Hong Kong (China); Kretschmar, Peter [European Space Astronomy Centre (ESA/ESAC), Science Operations Department, Villanueva de la Cañada (Madrid) (Spain); Hou, Xian [Yunnan Observatories, Chinese Academy of Sciences, 396 Yangfangwang, Guandu District, Kunming 650216 (China); Takata, Jumpei, E-mail: jian@ice.csic.es [School of Physics, Huazhong University of Science and Technology, Wuhan 430074 (China)

2017-09-10

HESS J0632+057 is the only gamma-ray binary that has been detected at TeV energies, but not at GeV energies yet. Based on nearly nine years of Fermi Large Area Telescope (LAT) Pass 8 data, we report here on a deep search for the gamma-ray emission from HESS J0632+057 in the 0.1–300 GeV energy range. We find a previously unknown gamma-ray source, Fermi J0632.6+0548, spatially coincident with HESS J0632+057. The measured flux of Fermi J0632.6+0548 is consistent with the previous flux upper limit on HESS J0632+057 and shows variability that can be related to the HESS J0632+057 orbital phase. We propose that Fermi J0632.6+0548 is the GeV counterpart of HESS J0632+057. Considering the Very High Energy spectrum of HESS J0632+057, a possible spectral turnover above 10 GeV may exist in Fermi J0632.6+0548, as appears to be common in other established gamma-ray binaries.

Single-InN-Nanowire Nanogenerator with Upto 1 V Output Voltage

KAUST Repository

Huang, Chi-Te

2010-07-30

Piezoelectric potential of a InN nanowire (NW) growing along [011̄0] can be positive, negative, and zero depending on the direction of the applied transverse force. By measuring the output voltage of a InN-NW-based nanogenerator, about 40% to 55% of output voltages are within the range of ?1 and ?20 mV, and 25% to 30% of output voltages would exceed ?100 mV. Some output voltages could reach the magnitude of ?1000 mV, showing its great potential for fabricating high-output nanogenerators. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Method of controlling illumination device based on current-voltage model

DEFF Research Database (Denmark)

2013-01-01

The present invention relates to an illumination device comprising a number of LEDs, means for receiving an input signal, means for generating an activation signal for at least one of the LEDs based on the input signal. The illumination device comprises further means for obtaining the voltage...... and the colorimetric properties of said light emitted by LED. The present invention relates also to a method of controlling and a meted of calibrating such illumination device....... across and current through the LED and the means for generating the activation signal is adapted to generate the activating signal based on the voltage, the current and a current- voltage model related to LED. The current-voltage model defines a relationship between the current, the voltage...

Nonlinear current-voltage characteristics of WO3-x nano-/micro-rods

Science.gov (United States)

Shen, Zhenguang; Peng, Zhijian; Zhao, Zengying; Fu, Xiuli

2018-04-01

A series of crystalline tungsten oxide nano-/micro-rods with different compositions of WO3, WO2.90, W19O55 (WO2.89) and W18O49 (WO2.72) but identical morphology feature were first prepared. Then, various nanoscaled electrical devices were fabricated from them by micro-fabrication through a focused ion beam technique. Interestingly, the devices from the oxygen-deficient WO3-x display significantly nonlinear current-voltage characteristics. The calculated nonlinear coefficients of the WO2.90, WO2.83, and WO2.72 varistors are 2.52, 3.32 and 4.91, respectively. The breakdown voltage of the WO2.90, WO2.83, and WO2.72 varistors are 1.93, 1.28 and 0.93 V, respectively. Such WO3-x nano-varistors might be promising for low-voltage electrical/electronic devices.

Estimation of current density distribution of PAFC by analysis of cell exhaust gas

Energy Technology Data Exchange (ETDEWEB)

Kato, S.; Seya, A. [Fuji Electric Co., Ltd., Ichihara-shi (Japan); Asano, A. [Fuji Electric Corporate, Ltd., Yokosuka-shi (Japan)

1996-12-31

To estimate distributions of Current densities, voltages, gas concentrations, etc., in phosphoric acid fuel cell (PAFC) stacks, is very important for getting fuel cells with higher quality. In this work, we leave developed a numerical simulation tool to map out the distribution in a PAFC stack. And especially to Study Current density distribution in the reaction area of the cell, we analyzed gas composition in several positions inside a gas outlet manifold of the PAFC stack. Comparing these measured data with calculated data, the current density distribution in a cell plane calculated by the simulation, was certified.

3-D time-domain induced polarization tomography: a new approach based on a source current density formulation

Science.gov (United States)

Soueid Ahmed, A.; Revil, A.

2018-04-01

Induced polarization (IP) of porous rocks can be associated with a secondary source current density, which is proportional to both the intrinsic chargeability and the primary (applied) current density. This gives the possibility of reformulating the time domain induced polarization (TDIP) problem as a time-dependent self-potential-type problem. This new approach implies a change of strategy regarding data acquisition and inversion, allowing major time savings for both. For inverting TDIP data, we first retrieve the electrical resistivity distribution. Then, we use this electrical resistivity distribution to reconstruct the primary current density during the injection/retrieval of the (primary) current between the current electrodes A and B. The time-lapse secondary source current density distribution is determined given the primary source current density and a distribution of chargeability (forward modelling step). The inverse problem is linear between the secondary voltages (measured at all the electrodes) and the computed secondary source current density. A kernel matrix relating the secondary observed voltages data to the source current density model is computed once (using the electrical conductivity distribution), and then used throughout the inversion process. This recovered source current density model is in turn used to estimate the time-dependent chargeability (normalized voltages) in each cell of the domain of interest. Assuming a Cole-Cole model for simplicity, we can reconstruct the 3-D distributions of the relaxation time τ and the Cole-Cole exponent c by fitting the intrinsic chargeability decay curve to a Cole-Cole relaxation model for each cell. Two simple cases are studied in details to explain this new approach. In the first case, we estimate the Cole-Cole parameters as well as the source current density field from a synthetic TDIP data set. Our approach is successfully able to reveal the presence of the anomaly and to invert its Cole

Current–voltage characteristics of manganite–titanite perovskite junctions

Directory of Open Access Journals (Sweden)

Benedikt Ifland

2015-07-01

Full Text Available After a general introduction into the Shockley theory of current voltage (J–V characteristics of inorganic and organic semiconductor junctions of different bandwidth, we apply the Shockley theory-based, one diode model to a new type of perovskite junctions with polaronic charge carriers. In particular, we studied manganite–titanate p–n heterojunctions made of n-doped SrTi1−yNbyO3, y = 0.002 and p-doped Pr1−xCaxMnO3, x = 0.34 having a strongly correlated electron system. The diffusion length of the polaron carriers was analyzed by electron beam-induced current (EBIC in a thin cross plane lamella of the junction. In the J–V characteristics, the polaronic nature of the charge carriers is exhibited mainly by the temperature dependence of the microscopic parameters, such as the hopping mobility of the series resistance and a colossal electro-resistance (CER effect in the parallel resistance. We conclude that a modification of the Shockley equation incorporating voltage-dependent microscopic polaron parameters is required. Specifically, the voltage dependence of the reverse saturation current density is analyzed and interpreted as a voltage-dependent electron–polaron hole–polaron pair generation and separation at the interface.

High critical current density YBCO films and fabrication of dc-SQUIDs

CERN Document Server

Kuriki, S; Kawaguchi, Y; Matsuda, M; Otowa, T

2002-01-01

In order to improve the sensitivity of SQUID magnetometers made of high-T sub c films, we have studied the conditions of pulsed-laser deposition of YBCO films. Among the different deposition parameters examined, extensive degassing of the vacuum chamber before and precise control of the substrate temperature during the film deposition were found effective for obtaining high critical temperature T sub c and high critical current density J sub c. It was also found that the residual-resistance ratio has a clear correlation with J sub c , indicating that it can be a good, and easy to measure, index of the film quality. Films having T sub c approx 89-90 K and J sub c >= 5x10 sup 6 A cm sup - sup 2 at 77 K were used to fabricate SQUIDs without a pickup loop. Grain-boundary junctions formed on bicrystal substrates with a 30 deg. misorientation angle exhibited I sub c R sub n values of more than 100 mu V at 77 K. The well-known scaling behaviour of the relation I sub c R sub n propor to (J sup G sup B sub c) sup 1 su...

The Design of Operational Amplifier for Low Voltage and Low Current Sound Energy Harvesting System

Science.gov (United States)

Fang, Liew Hui; Rahim, Rosemizi Bin Abd; Isa, Muzamir; Idris Syed Hassan, Syed; Ismail, Baharuddin Bin

2018-03-01

The objective of this paper is to design a combination of an operational amplifier (op-amp) with a rectifier used in an alternate current (ac) to direct current (dc) power conversion. The op-amp was designed to specifically work at low voltage and low current for a sound energy harvesting system. The goal of the op-amp design with adjustable gain was to control output voltage based on the objectives of the experiment conducted. The op-amp was designed for minimum power dissipation performance, with the means of increasing the output current when receiving a large amount of load. The harvesting circuits which designed further improved the power output efficiency by shortening the fully charged time needed by a supercapacitor bank. It can fulfil the long-time power demands for low power device. Typically, a small amount of energy sources were converted to electricity and stored in the supercapacitor bank, which was built by 10 pieces of capacitors with 0.22 F each, arranged in parallel connection. The highest capacitance was chosen based on the characteristic that have the longest discharging time to support the applications of a supercapacitor bank. Testing results show that the op-amp can boost the low input ac voltage (∼3.89 V) to high output dc voltage (5.0 V) with output current of 30 mA and stored the electrical energy in a big supercapacitor bank having a total of 2.2 F, effectively. The measured results agree well with the calculated results.

Graphene-Based Linear Tandem Micro-Supercapacitors with Metal-Free Current Collectors and High-Voltage Output.

Science.gov (United States)

Shi, Xiaoyu; Wu, Zhong-Shuai; Qin, Jieqiong; Zheng, Shuanghao; Wang, Sen; Zhou, Feng; Sun, Chenglin; Bao, Xinhe

2017-11-01

Printable supercapacitors are regarded as a promising class of microscale power source, but are facing challenges derived from conventional sandwich-like geometry. Herein, the printable fabrication of new-type planar graphene-based linear tandem micro-supercapacitors (LTMSs) on diverse substrates with symmetric and asymmetric configuration, high-voltage output, tailored capacitance, and outstanding flexibility is demonstrated. The resulting graphene-based LTMSs consisting of 10 micro-supercapacitors (MSs) present efficient high-voltage output of 8.0 V, suggestive of superior uniformity of the entire integrated device. Meanwhile, LTMSs possess remarkable flexibility without obvious capacitance degradation under different bending states. Moreover, areal capacitance of LTMSs can be sufficiently modulated by incorporating polyaniline-based pseudocapacitive nanosheets into graphene electrodes, showing enhanced capacitance of 7.6 mF cm -2 . To further improve the voltage output and energy density, asymmetric LTMSs are fabricated through controlled printing of linear-patterned graphene as negative electrodes and MnO 2 nanosheets as positive electrodes. Notably, the asymmetric LTMSs from three serially connected MSs are easily extended to 5.4 V, triple voltage output of the single cell (1.8 V), suggestive of the versatile applicability of this technique. Therefore, this work offers numerous opportunities of graphene and analogous nanosheets for one-step scalable fabrication of flexible tandem energy storage devices integrating with printed electronics on same substrate. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Electrical and optical characteristics of dielectric-barrier discharge driven by high voltage nanosecond generator

International Nuclear Information System (INIS)

Ahmadeev, V.V.; Kost'yuchenko, S.V.; Kudryavtsev, N.N.; Kurkin, G.A.; Vasilyak, L.M.

1998-01-01

Electrical and optical characteristics of the dielectric-barrier discharge in the pressure range of 10-400 Torr were investigated experimentally, particular attention being paid to the discharge homogeneity and to the energy dissipation in the discharge volume. The discharge was driven by a high-voltage pulse generator producing nanosecond high-voltage pulses with an amplitude of 20-30 kV. Air, nitrogen, and helium were used as working gases. The discharge was found to be homogeneous within a wide range of gas pressure. A power density of up to 250 mW/cm 3 has been achieved. (J.U.)

J/ψ production as a function of charged-particle pseudorapidity density in p–Pb collisions at sNN=5.02TeV

Directory of Open Access Journals (Sweden)

D. Adamová

2018-01-01

Full Text Available We report measurements of the inclusive J/ψ yield and average transverse momentum as a function of charged-particle pseudorapidity density dNch/dη in p–Pb collisions at sNN=5.02TeV with ALICE at the LHC. The observables are normalised to their corresponding averages in non-single diffractive events. An increase of the normalised J/ψ yield with normalised dNch/dη, measured at mid-rapidity, is observed at mid-rapidity and backward rapidity. At forward rapidity, a saturation of the relative yield is observed for high charged-particle multiplicities. The normalised average transverse momentum at forward and backward rapidities increases with multiplicity at low multiplicities and saturates beyond moderate multiplicities. In addition, the forward-to-backward nuclear modification factor ratio is also reported, showing an increasing suppression of J/ψ production at forward rapidity with respect to backward rapidity for increasing charged-particle multiplicity.

Reduced density and altered regulation of rat atrial L-type Ca2+ current in heart failure.

Science.gov (United States)

Bond, Richard C; Bryant, Simon M; Watson, Judy J; Hancox, Jules C; Orchard, Clive H; James, Andrew F

2017-03-01

Constitutive regulation by PKA has recently been shown to contribute to L-type Ca 2+ current ( I CaL ) at the ventricular t-tubule in heart failure. Conversely, reduction in constitutive regulation by PKA has been proposed to underlie the downregulation of atrial I CaL in heart failure. The hypothesis that downregulation of atrial I CaL in heart failure involves reduced channel phosphorylation was examined. Anesthetized adult male Wistar rats underwent surgical coronary artery ligation (CAL, N =10) or equivalent sham-operation (Sham, N =12). Left atrial myocytes were isolated ~18 wk postsurgery and whole cell currents recorded (holding potential=-80 mV). I CaL activated by depolarizing pulses to voltages from -40 to +50 mV were normalized to cell capacitance and current density-voltage relations plotted. CAL cell capacitances were ~1.67-fold greater than Sham ( P ≤ 0.0001). Maximal I CaL conductance ( G max ) was downregulated more than 2-fold in CAL vs. Sham myocytes ( P 50% more effectively in CAL than in Sham so that differences in I CaL density were abolished. Differences between CAL and Sham G max were not abolished by calyculin A (100 nmol/l), suggesting that increased protein dephosphorylation did not account for I CaL downregulation. Treatment with either H-89 (10 μmol/l) or AIP (5 μmol/l) had no effect on basal currents in Sham or CAL myocytes, indicating that, in contrast to ventricular myocytes, neither PKA nor CaMKII regulated basal I CaL Expression of the L-type α 1C -subunit, protein phosphatases 1 and 2A, and inhibitor-1 proteins was unchanged. In conclusion, reduction in PKA-dependent regulation did not contribute to downregulation of atrial I CaL in heart failure. NEW & NOTEWORTHY Whole cell recording of L-type Ca 2+ currents in atrial myocytes from rat hearts subjected to coronary artery ligation compared with those from sham-operated controls reveals marked reduction in current density in heart failure without change in channel subunit

Prediction of density limit disruptions on the J-TEXT tokamak

International Nuclear Information System (INIS)

Wang, S Y; Chen, Z Y; Huang, D W; Tong, R H; Yan, W; Wei, Y N; Ma, T K; Zhang, M; Zhuang, G

2016-01-01

Disruption mitigation is essential for the next generation of tokamaks. The prediction of plasma disruption is the key to disruption mitigation. A neural network combining eight input signals has been developed to predict the density limit disruptions on the J-TEXT tokamak. An optimized training method has been proposed which has improved the prediction performance. The network obtained has been tested on 64 disruption shots and 205 non-disruption shots. A successful alarm rate of 82.8% with a false alarm rate of 12.3% can be achieved at 4.8 ms prior to the current spike of the disruption. It indicates that more physical parameters than the current physical scaling should be considered for predicting the density limit. It was also found that the critical density for disruption can be predicted several tens of milliseconds in advance in most cases. Furthermore, if the network is used for real-time density feedback control, more than 95% of the density limit disruptions can be avoided by setting a proper threshold. (paper)

Pinch density measurements in compact plasma foci of 400J and 50J

International Nuclear Information System (INIS)

Tarifeño-Saldivia, Ariel; Pavez, Cristian; Soto, Leopoldo

2014-01-01

A Mach-Zehnder interferometer using a pulsed Nd-YAG laser (600 mJ, 532 nm, 8 ns) was implemented to measure the electron density and the dimensions of the pinch column in two sub-kJ compact plasma focus devices operating at hundred joules (PF-400J) and tens of joules (PF-50J).

Ozone synthesis improves by increasing number density of plasma channels and lower voltage in a nonthermal plasma

Science.gov (United States)

Arif Malik, Muhammad; Hughes, David

2016-04-01

Improvements in ozone synthesis from air and oxygen by increasing the number density of plasma channels and lower voltage for the same specific input energy (SIE) were explored in a nonthermal plasma based on a sliding discharge. The number of plasma channels and energy per pulse increased in direct proportion to the increase in the effective length of the anode (the high voltage electrode). Decreasing the discharge gap increased the energy per pulse for the same length and allowed the installation of more electrode pairs in the same space. It allowed the increase of the number of plasma channels in the same space to achieve the same SIE at a lower peak voltage with less energy per plasma channel. The ozone concentration gradually increased to ~1500 ppmv (140 to 50 g kWh-1) from air and to ~6000 ppmv (400 to 200 g kWh-1) from oxygen with a gradual increase in the SIE to ~200 J L-1, irrespective of the variations in electrode geometry, applied voltage or flow rate of the feed gas. A gradual increase in SIE beyond 200 J L-1 gradually increased the ozone concentration to a certain maximum value followed by a decline, but the rate of increase and the maximum value was higher for the greater number of plasma channels and lower peak voltage combination. The maximum ozone concentration was ~5000 ppmv (~30 g kWh-1) from air and ~22 000 ppmv (~80 g kWh-1) from oxygen. The results are explained on the basis of characteristics of the plasma and ozone synthesis mechanism.

Current–voltage characteristics of high-voltage 4H-SiC p{sup +}–n{sub 0}–n{sup +} diodes in the avalanche breakdown mode

Energy Technology Data Exchange (ETDEWEB)

Ivanov, P. A., E-mail: Pavel.Ivanov@mail.ioffe.ru; Potapov, A. S.; Samsonova, T. P.; Grekhov, I. V. [Ioffe Physical–Technical Institute (Russian Federation)

2017-03-15

p{sup +}–n{sub 0}–n{sup +} 4H-SiC diodes with homogeneous avalanche breakdown at 1860 V are fabricated. The pulse current–voltage characteristics are measured in the avalanche-breakdown mode up to a current density of 4000 A/cm{sup 2}. It is shown that the avalanche-breakdown voltage increases with increasing temperature. The following diode parameters are determined: the avalanche resistance (8.6 × 10{sup –2} Ω cm{sup 2}), the electron drift velocity in the n{sub 0} base at electric fields higher than 10{sup 6} V/cm (7.8 × 10{sup 6} cm/s), and the relative temperature coefficient of the breakdown voltage (2.1 × 10{sup –4} K{sup –1}).

The Effect of Image Potential on the Current-Voltage Characteristics of a Ferritin-layer

Directory of Open Access Journals (Sweden)

Eunjung Bang

2010-11-01

Full Text Available Considering for the concept of power storage systems, such as those used to supply power to microelectronic devices, ferritins have aroused a lot of interests for applications in bioelectrochemical devices. And electron transfer rates from the proteins to electrode surface are key determinants of overall performance and efficiency of the ferritin-based devices. Here we have investigated the electron transport mechanism of ferritin layer which was immobilized on an Au electrode. The current-voltage (I-V curves are obtained by a conductive atomic force microscope (c-AFM as a function of contact area between AFM tip and the ferritin layer. In the low voltage region, I-V curves are affected by both Fowler-Nordheim tunneling and image force. On the other hand, the experimental results are consistent with a Simmons model in a high voltage region, indicating that, as the voltage increases, the image potential has a dominant effect on the electron transport mechanism. These results are attributed to the film-like character of the ferritin layer, which generates an image potential to lower the barrier height in proportion to the voltage increment.

Coherent Voltage Oscillations in Superconducting Polycrystalline Y1Ba2Cu3O7-x

International Nuclear Information System (INIS)

Altinkok, A; Yetis, H; Olutas, M; Kilic, K; Kilic, A; Cetin, O

2006-01-01

We have investigated the voltage response of superconducting polycrystalline bulk Y 1 Ba 2 Cu 3 O 7-x (YBCO) material to a bidirectional square wave current with long periods and dc current by means of the evolution of the voltage-time (V-t) curves near the critical temperature. In a well-defined range of amplitudes and periods of driving current, and temperatures, it was observed that a non-linear response to bidirectional square wave current rides on a time independent background voltage value and manifests itself as regular sinusoidal-like voltage oscillations. It was found that the non-linear response disappears when the bidirectional current was switched to dc current. The spectral content of the voltage oscillations analyzed by the Fast Fourier Transform of the corresponding V-t curves revealed that the fundamental harmonics is comparable to the frequency of bidirectional square wave current. The coherent voltage oscillations were discussed mainly in terms of the dynamic competition between pinning and depinning together with the disorder in the coupling strength between the superconducting grains (i.e Josephson coupling effects). The density fluctuations and semi-elastic coupling of the flux lines with the pinning centers were also considered as possible physical mechanisms in the interpretation of the experimental results

DC-Voltage Fluctuation Elimination Through a DC-Capacitor Current Control for DFIG Converters Under Unbalanced Grid Voltage Conditions

DEFF Research Database (Denmark)

Liu, Changjin; Xu, Dehong; Zhu, Nan

2013-01-01

Unbalanced grid voltage causes a large second-order harmonic current in the dc-link capacitors as well as dc-voltage fluctuation, which potentially will degrade the lifespan and reliability of the capacitors in voltage source converters. This paper proposes a novel dc-capacitor current control...... method for a grid-side converter (GSC) to eliminate the negative impact of unbalanced grid voltage on the dc-capacitors. In this method, a dc-capacitor current control loop, where a negative-sequence resonant controller is used to increase the loop gain, is added to the conventional GSC current control...... loop. The rejection capability to the unbalanced grid voltage and the stability of the proposed control system are discussed. The second-order harmonic current in the dc capacitor as well as dc-voltage fluctuation is very well eliminated. Hence, the dc capacitors will be more reliable under unbalanced...

Optical sensors for the measurement of electric current and voltage

Energy Technology Data Exchange (ETDEWEB)

Rutgers, W R; Hulshof, H J.M.; Laurensse, I J; van der Wey, A H

1987-01-01

Optical sensors for the measurement of electrical current and voltage were developed for application in electric power systems. The current sensor, based on the Faraday effect in a monomode glass fiber, and the voltage sensor, based on the transverse Pockels effect in a crystal, are demonstrated in wide-band (10 MHz) interference-free measurements of pulsed currents and impulse voltages.

Multiple current peaks in room-temperature atmospheric pressure homogenous dielectric barrier discharge plasma excited by high-voltage tunable nanosecond pulse in air

Energy Technology Data Exchange (ETDEWEB)

Yang, De-Zheng; Wang, Wen-Chun; Zhang, Shuai; Tang, Kai; Liu, Zhi-jie; Wang, Sen [Key Lab of Materials Modification, Dalian University of Technology, Ministry of Education, Dalian 116024 (China)

2013-05-13

Room temperature homogenous dielectric barrier discharge plasma with high instantaneous energy efficiency is acquired by using nanosecond pulse voltage with 20-200 ns tunable pulse width. Increasing the voltage pulse width can lead to the generation of regular and stable multiple current peaks in each discharge sequence. When the voltage pulse width is 200 ns, more than 5 organized current peaks can be observed under 26 kV peak voltage. Investigation also shows that the organized multiple current peaks only appear in homogenous discharge mode. When the discharge is filament mode, organized multiple current peaks are replaced by chaotic filament current peaks.

Current density tensors

Science.gov (United States)

Lazzeretti, Paolo

2018-04-01

It is shown that nonsymmetric second-rank current density tensors, related to the current densities induced by magnetic fields and nuclear magnetic dipole moments, are fundamental properties of a molecule. Together with magnetizability, nuclear magnetic shielding, and nuclear spin-spin coupling, they completely characterize its response to magnetic perturbations. Gauge invariance, resolution into isotropic, deviatoric, and antisymmetric parts, and contributions of current density tensors to magnetic properties are discussed. The components of the second-rank tensor properties are rationalized via relationships explicitly connecting them to the direction of the induced current density vectors and to the components of the current density tensors. The contribution of the deviatoric part to the average value of magnetizability, nuclear shielding, and nuclear spin-spin coupling, uniquely determined by the antisymmetric part of current density tensors, vanishes identically. The physical meaning of isotropic and anisotropic invariants of current density tensors has been investigated, and the connection between anisotropy magnitude and electron delocalization has been discussed.

The Effect of Current-Limiting Reactors on the Tripping of Short Circuits in High-Voltage Electrical Equipment

International Nuclear Information System (INIS)

Volkov, M. S.; Gusev, Yu. P.; Monakov, Yu. V.; Cho, Gvan Chun

2016-01-01

The insertion of current-limiting reactors into electrical equipment operating at a voltage of 110 and 220 kV produces a change in the parameters of the transient recovery voltages at the contacts of the circuit breakers for disconnecting short circuits, which could be the reason for the increase in the duration of the short circuit, damage to the electrical equipment and losses in the power system. The results of mathematical modeling of the transients, caused by tripping of the short circuit in a reactive electric power transmission line are presented, and data are given on the negative effect of a current-limiting resistor on the rate of increase and peak value of the transient recovery voltages. Methods of ensuring the standard requirements imposed on the parameters of the transient recovery voltages when using current-limiting reactors in the high-voltage electrical equipment of power plants and substations are proposed and analyzed

Critical current densities in thick yttrium-barium cuprate (1-2-3) films

International Nuclear Information System (INIS)

Ryvkina, G.G.; Gorlanov, S.F.; Vedernikov, G.E.; Telegin, A.B.; Ryabin, V.A.; Khodos, M.Ya.

1993-01-01

The study of critical current densities j c of oxide superconductors and their thick films is a very important practical task because the value of j c is one of the main criteria for their utilization in modern cryoelectronics. For most devices based on the Josephson effect, the value of j c ∼ 10 2 - 10 3 A/cm 2 is acceptable, which is easily attainable for polycrystalline thick films obtained by stenciling. The study of the current-transport phenomenon involves a number of difficulties, especially for direct current, because both the sample itself and the lead-in contacts are resistance-heated during the measurements, which, in turn, results in lower values of the j c . Measurements with pulsed currents allow one to lower the power that is applied to the sample; the heat that is released in the sample is reduced, in comparison to measurements with direct current, by a factor of the pulsed-current duty cycle. In addition, measurements with direct current detects only the appearance of resistance; it provides no information on the rest of the transition from the normal to the superconductive state, i.e., on the so-called 'tail' of the transition. In this work, the authors studied critical current densities of thick HTSC yttrium-barium cuprate films of the 1-2-3 composition using pulsed current

Evaluating effect of surface state density at the interfaces in degraded bulk heterojunction organic solar cell

International Nuclear Information System (INIS)

Arora, Swati; Singh, Vinamrita; Arora, Manoj; Pal Tandon, Ram

2012-01-01

Degradation and short shelf life have been observed experimentally in poly(3-hexylthiophene) (P3HT): 6,6-phenyl C61-butyric acid methyl ester (PCBM) based blend solar cells. Both dark and illuminated current-voltage characteristics could be explained quantitatively with a proposed single model for a typical degraded organic solar cell-glass/ITO/PEDOT:PSS/P3HT:PCBM/Al. It has been found that surface state density, interface thickness, tunneling coefficient and occupation probabilities of the interface states becomes important with the passage of time. To look into the problem the activity at ITO/PEDOT:PSS and P3HT:PCBM/Al interfaces are studied using realistic values of the interfaces. The experimental J-V characteristics is well explained with the inclusion of tunneling current through these surface states and becomes the dominant current component for the degraded cell. It is also found that surface state density increases to 10 12 -10 13 cm -2 eV -1 , which has been verified with C-V measurements and also is in agreement with our proposed model for BHJ solar cell after 150 h of fabrication.

Evaluating effect of surface state density at the interfaces in degraded bulk heterojunction organic solar cell

Energy Technology Data Exchange (ETDEWEB)

Arora, Swati, E-mail: drswatia@yahoo.com [Department of Physics, Zakir Husain College, University of Delhi, Delhi 110002 (India); Singh, Vinamrita [Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India); Arora, Manoj [Department of Physics, Ramjas College, University of Delhi, Delhi 110007 (India); Pal Tandon, Ram [Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India)

2012-08-01

Degradation and short shelf life have been observed experimentally in poly(3-hexylthiophene) (P3HT): 6,6-phenyl C61-butyric acid methyl ester (PCBM) based blend solar cells. Both dark and illuminated current-voltage characteristics could be explained quantitatively with a proposed single model for a typical degraded organic solar cell-glass/ITO/PEDOT:PSS/P3HT:PCBM/Al. It has been found that surface state density, interface thickness, tunneling coefficient and occupation probabilities of the interface states becomes important with the passage of time. To look into the problem the activity at ITO/PEDOT:PSS and P3HT:PCBM/Al interfaces are studied using realistic values of the interfaces. The experimental J-V characteristics is well explained with the inclusion of tunneling current through these surface states and becomes the dominant current component for the degraded cell. It is also found that surface state density increases to 10{sup 12}-10{sup 13} cm{sup -2} eV{sup -1}, which has been verified with C-V measurements and also is in agreement with our proposed model for BHJ solar cell after 150 h of fabrication.

Current-voltage curve of sodium channels and concentration dependence of sodium permeability in frog skin

DEFF Research Database (Denmark)

Fuchs, W; Larsen, Erik Hviid; Lindemann, B

1977-01-01

1. The inward facing membranes of in vitro frog skin epithelium were depolarized with solutions of high K concentration. The electrical properties of the epithelium are then expected to be governed by the outward facing, Na-selective membrane.2. In this state, the transepithelial voltage (V...... was recorded. This procedure was repeated after blocking the Na channels with amiloride to obtain the current-voltage curve of transmembrane and paracellular shunt pathways. The current-voltage curve of the Na channels was computed by subtracting the shunt current from the total current.4. The instantaneous I...... of the inward facing membranes but reflects the true behaviour of P(Na).6. The steady-state P(Na) at a given (Na)(o) is smaller than the transient P(Na) observed right after a stepwise increase of (Na)(o) to this value. The time constant of P(Na)-relaxation is in the order of seconds.7. In conclusion, Na...

Method of measuring the current density distribution and emittance of pulsed electron beams

International Nuclear Information System (INIS)

Schilling, H.B.

1979-07-01

This method of current density measurement employs an array of many Faraday cups, each cup being terminated by an integrating capacitor. The voltages of the capacitors are subsequently displayed on a scope, thus giving the complete current density distribution with one shot. In the case of emittance measurements, a moveable small-diameter aperture is inserted at some distance in front of the cup array. Typical results with a two-cathode, two-energy electron source are presented. (orig.)

Characterization of a low-voltage electron beam

International Nuclear Information System (INIS)

Berejka, A.J.

2004-01-01

Growing interests in low-voltage electron beam (EB) processing in areas that may require regulatory compliance, such as the curing of inks and coatings for food packaging materials and in the surface disinfection of medicinal and food containers, lead to the characterization of a low-voltage EB by two methods: a widely used thin radiochromic film and a film strip made on a continuous basis with an alanine coating. Using a laboratory unit, beam currents and voltages were varied and then optical density and alanine/matrix ratios were, respectively, determined. No inferences as to 'dose' were made. The radiochromic film was found to be insensitive to slight changes at low beam currents and to show considerable divergence and a broadening in response as current was increased across a meaningful range at the three applied beam voltages of 80, 100 and 120 kV. The electron paramagnetic resonance (EPR) increase in response of the alanine coated film taken as a ratio to an internal reference material within the test instrument itself was shown to have a linear response with respect to beam current and no divergence as current increased. The use of an alanine coating of thickness greater than that of the extrapolated range of the electron penetration offers a method for the characterization of the output of such very low-voltage beams

Growth and decay of surface voltage on silver diffused polyimide exposed to 3-15 keV electrons

Energy Technology Data Exchange (ETDEWEB)

Mahapatra, S K; Dhole, S D; Bhoraskar, V N [Department of Physics, University of Pune, Pune-411007 (India)

2007-02-21

During electron irradiation, the growth in the surface voltage on virgin and silver diffused polyimide sample was studied by varying electron energy from 3 to 15 keV and beam diameter from 3 to 15 mm. At a constant beam current, the surface voltage increased nonlinearly with electron energy but decreased slowly with beam diameter at fixed electron energy. At a surface voltage around saturation or beyond 3 kV, the electron beam was switched off and the decay in the surface voltage was studied for a period of 9 x 10{sup 4} s. The surface analysis revealed that the relative concentrations of carbon increased and that of the oxygen and the nitrogen decreased in the electron irradiated virgin and silver diffused polyimide sample, however in different proportions. Under the identical conditions of electron irradiation, the growth rate of the surface voltage, the post irradiated surface resistivity and the voltage decay constant of the silver diffused polyimide were lower than that of the virgin polyimide. The results of the present study reveal that the resistance of the silver diffused polyimide to keV electrons is higher than that of the virgin polyimide.

A Low Input Current and Wide Conversion Ratio Buck Regulator with 75% Efficiency for High-Voltage Triboelectric Nanogenerators

Science.gov (United States)

Luo, Li-Chuan; Bao, De-Chun; Yu, Wu-Qi; Zhang, Zhao-Hua; Ren, Tian-Ling

2016-01-01

It is meaningful to research the Triboelectric Nanogenerators (TENG), which can create electricity anywhere and anytime. There are many researches on the structures and materials of TENG to explain the phenomenon that the maximum voltage is stable and the current is increasing. The output voltage of the TENG is high about 180-400 V, and the output current is small about 39 μA, which the electronic devices directly integration of TENG with Li-ion batteries will result in huge energy loss due to the ultrahigh TENG impedance. A novel interface circuit with the high-voltage buck regulator for TENG is introduced firstly in this paper. The interface circuit can transfer the output signal of the TENG into the signal fit to a lithium ion battery. Through the circuit of the buck regulator, the average output voltage is about 4.0 V and the average output current is about 1.12 mA. Further, the reliability and availability for the lithium ion battery and the circuit are discussed. The interface circuit is simulated using the Cadence software and verified through PCB experiment. The buck regulator can achieve 75% efficiency for the High-Voltage TENG. This will lead to a research hot and industrialization applications.

Harmonic current interaction at a low voltage customer's installations

NARCIS (Netherlands)

Bhattacharyya, S.; Myrzik, J.M.A.; Kling, W.L.; Cobben, J.F.G.; Casteren, van J.

2009-01-01

The increased uses of power electronics and switching devices in the electricity network have changed the operational environment of the power system. These devices have nonlinear voltage-current characteristics and produce harmonic currents, and consequently distort the voltage waveform. A low

Transition from Fowler-Nordheim field emission to space charge limited current density

International Nuclear Information System (INIS)

Feng, Y.; Verboncoeur, J. P.

2006-01-01

The Fowler-Nordheim law gives the current density extracted from a surface under strong fields, by treating the emission of electrons from a metal-vacuum interface in the presence of an electric field normal to the surface as a quantum mechanical tunneling process. Child's law predicts the maximum transmitted current density by considering the space charge effect. When the electric field becomes high enough, the emitted current density will be limited by Child's law. This work analyzes the transition of the transmitted current density from the Fowler-Nordheim law to Child's law space charge limit using a one-dimensional particle-in-cell code. Also studied is the response of the emission model to strong electric fields near the transition point. We find the transition without geometrical effort is smooth and much slower than reported previously [J. P. Barbour, W. W. Dolan, J. K. Trolan, E. E. Martin, and W. P. Dyke, Phys. Rev. 92, 45 (1953)]. We analyze the effects of geometric field enhancement and work function on the transition. Using our previous model for effective field enhancement [Y. Feng and J. P. Verboncoeur, Phys. Plasmas 12, 103301 (2005)], we find the geometric effect dominates, and enhancement β>10 can accelerate the approach to the space charge limit at practical electric field. A damped oscillation near the local plasma frequency is observed in the transient system response

Spatial distribution of superconducting and charge-density-wave order parameters in cuprates and its influence on the quasiparticle tunnel current (Review Article)

Science.gov (United States)

Gabovich, Alexander M.; Voitenko, Alexander I.

2016-10-01

The state of the art concerning tunnel measurements of energy gaps in cuprate oxides has been analyzed. A detailed review of the relevant literature is made, and original results calculated for the quasiparticle tunnel current J(V) between a metallic tip and a disordered d-wave superconductor partially gapped by charge density waves (CDWs) are reported, because it is this model of high-temperature superconductors that becomes popular owing to recent experiments in which CDWs were observed directly. The current was calculated suggesting the scatter of both the superconducting and CDW order parameters due to the samples' intrinsic inhomogeneity. It was shown that peculiarities in the current-voltage characteristics inherent to the case of homogeneous superconducting material are severely smeared, and the CDW-related features transform into experimentally observed peak-dip-hump structures. Theoretical results were used to fit data measured for YBa2Cu3O7-δ and Bi2Sr2CaCu2O8+δ. The fitting demonstrated a good qualitative agreement between the experiment and model calculations. The analysis of the energy gaps in high-Tc superconductors is important both per se and as a tool to uncover the nature of superconductivity in cuprates not elucidated so far despite of much theoretical effort and experimental progress.

Behavior of deep level defects on voltage-induced stress of Cu(In,Ga)Se{sub 2} solar cells

Energy Technology Data Exchange (ETDEWEB)

Lee, D.W.; Cho, S.E. [Department of Physics and Semiconductor Science, Dongguk University, Seoul (Korea, Republic of); Jeong, J.H. [Solar Cell Center, Korea Institute of Science and Technology, Seoul (Korea, Republic of); Cho, H.Y., E-mail: hycho@dongguk.edu [Department of Physics and Semiconductor Science, Dongguk University, Seoul (Korea, Republic of)

2015-05-01

The behavior of deep level defects by a voltage-induced stress for CuInGaSe{sub 2} (CIGS) solar cells has been investigated. CIGS solar cells were used with standard structures which are Al-doped ZnO/i-ZnO/CdS/CIGSe{sub 2}/Mo on soda lime glass, and that resulted in conversion efficiencies as high as 16%. The samples with the same structure were isothermally stressed at 100 °C under the reverse voltages. The voltage-induced stressing in CIGS samples causes a decrease in the carrier density and conversion efficiency. To investigate the behavior of deep level defects in the stressed CIGS cells, photo-induced current transient spectroscopy was utilized, and normally 3 deep level defects (including 2 hole traps and 1 electron trap) were found to be located at 0.18 eV and 0.29 eV above the valence band maximum (and 0.36 eV below the conduction band). In voltage-induced cells, especially, it was found that the decrease of the hole carrier density could be responsible for the increase of the 0.29 eV defect, which is known to be observed in less efficient CIGS solar cells. And the carrier density and the defects are reversible at least to a large extent by resting at room-temperature without the bias voltage. From optical capture kinetics in photo-induced current transient spectroscopy measurement, the types of defects could be distinguished into the isolated point defect and the extended defect. In this work, it is suggested that the increase of the 0.29 eV defect by voltage-induced stress could be due to electrical activation accompanied by a loss of positive ion species and the activated defect gives rise to reduction of the carrier density. - Highlights: • We investigated behavior of deep level defects by voltage-induced stress. • Defect generation could affect the decrease of the conversion efficiency of cells. • Defect generation could be electrically activated by a loss of positive ion species. • Type of defects could be studied with models of point defects

0.5 V and 0.43 pJ/bit Capacitive Sensor Interface for Passive Wireless Sensor Systems.

Science.gov (United States)

Beriain, Andoni; Gutierrez, Iñigo; Solar, Hector; Berenguer, Roc

2015-08-28

This paper presents an ultra low-power and low-voltage pulse-width modulation based ratiometric capacitive sensor interface. The interface was designed and fabricated in a standard 90 nm CMOS 1P9M technology. The measurements show an effective resolution of 10 bits using 0.5 V of supply voltage. The active occupied area is only 0.0045 mm2 and the Figure of Merit (FOM), which takes into account the energy required per conversion bit, is 0.43 pJ/bit. Furthermore, the results show low sensitivity to PVT variations due to the proposed ratiometric architecture. In addition, the sensor interface was connected to a commercial pressure transducer and the measurements of the resulting complete pressure sensor show a FOM of 0.226 pJ/bit with an effective linear resolution of 7.64 bits. The results validate the use of the proposed interface as part of a pressure sensor, and its low-power and low-voltage characteristics make it suitable for wireless sensor networks and low power consumer electronics.

Evaluation of variation of voltage (kV) absorbed dose in chest CT scans

International Nuclear Information System (INIS)

Mendonca, Bruna G.A.; Mourao, Arnaldo P.

2013-01-01

Computed tomography (CT) is one of the most important diagnostic techniques images today. The increasing utilization of CT implies a significant increase of population exposure to ionizing radiation. Optimization of practice aims to reduce doses to patients because the image quality is directly related to the diagnosis. You can decrease the amount of dose to the patient, and maintain the quality of the image. There are several parameters that can be manipulated in a CT scan and these parameters can be used to reduce the energy deposited in the patient. Based on this, we analyzed the variation of dose deposited in the lungs, breasts and thyroid, by varying the supply voltage of the tube. Scans of the thorax were performed following the protocol of routine chest with constant and variable current for the same applied voltage. Moreover, a female phantom was used and thermoluminescent dosimeters (TLD-100), model bat, were used to record the specific organ doses. Scans were performed on a GE CT scanner, model 64 Discovery channels. Higher doses were recorded for the voltage of 120 kV with 200 mAs in the lungs (22.46 mGy) and thyroid (32.22 mGy). For scans with automatic mAs, variable between 100 and 440, this same tension contributed to the higher doses. The best examination in terms of the dose that was used with automatic 80 kV mAs, whose lungs and thyroid received lower dose. For the best breast exam was 100 kV. Since the increase in the 80 kV to 100 kV no impact so much the dose deposited in the lungs, it can be concluded that lowering the applied voltage to 100 kV resulted in a reduction in the dose absorbed by the patient. These results can contribute to optimizing scans of the chest computed tomography

Effect of the microscopic correlated-pinning landscape on the macroscopic critical current density in YBCO films

Science.gov (United States)

Ghigo, G.; Chiodoni, A.; Gerbaldo, R.; Gozzelino, L.; Laviano, F.; Mezzetti, E.; Minetti, B.; Camerlingo, C.

This paper deals with the mechanisms controlling the critical current density vs. field behavior in YBCO films. We base our analysis on a suitable model concerning the existence of a network of intergrain Josephson junctions whose length is modulated by defects. Irradiation with 0.25 GeV Au ions provide a useful tool to check the texture of the sample, in particular to give a gauge length reference to separate “weak” links and high- J c links.

An analytic current-voltage model for quasi-ballistic III-nitride high electron mobility transistors

Science.gov (United States)

Li, Kexin; Rakheja, Shaloo

2018-05-01

We present an analytic model to describe the DC current-voltage (I-V) relationship in scaled III-nitride high electron mobility transistors (HEMTs) in which transport within the channel is quasi-ballistic in nature. Following Landauer's transport theory and charge calculation based on two-dimensional electrostatics that incorporates negative momenta states from the drain terminal, an analytic expression for current as a function of terminal voltages is developed. The model interprets the non-linearity of access regions in non-self-aligned HEMTs. Effects of Joule heating with temperature-dependent thermal conductivity are incorporated in the model in a self-consistent manner. With a total of 26 input parameters, the analytic model offers reduced empiricism compared to existing GaN HEMT models. To verify the model, experimental I-V data of InAlN/GaN with InGaN back-barrier HEMTs with channel lengths of 42 and 105 nm are considered. Additionally, the model is validated against numerical I-V data obtained from DC hydrodynamic simulations of an unintentionally doped AlGaN-on-GaN HEMT with 50-nm gate length. The model is also verified against pulsed I-V measurements of a 150-nm T-gate GaN HEMT. Excellent agreement between the model and experimental and numerical results for output current, transconductance, and output conductance is demonstrated over a broad range of bias and temperature conditions.

Revisiting the role of trap-assisted-tunneling process on current-voltage characteristics in tunnel field-effect transistors

Science.gov (United States)

Omura, Yasuhisa; Mori, Yoshiaki; Sato, Shingo; Mallik, Abhijit

2018-04-01

This paper discusses the role of trap-assisted-tunneling process in controlling the ON- and OFF-state current levels and its impacts on the current-voltage characteristics of a tunnel field-effect transistor. Significant impacts of high-density traps in the source region are observed that are discussed in detail. With regard to recent studies on isoelectronic traps, it has been discovered that deep level density must be minimized to suppress the OFF-state leakage current, as is well known, whereas shallow levels can be utilized to control the ON-state current level. A possible mechanism is discussed based on simulation results.

CaV 3.1 and CaV 3.3 account for T-type Ca2+ current in GH3 cells

Directory of Open Access Journals (Sweden)

M.A. Mudado

2004-06-01

Full Text Available T-type Ca2+ channels are important for cell signaling by a variety of cells. We report here the electrophysiological and molecular characteristics of the whole-cell Ca2+ current in GH3 clonal pituitary cells. The current inactivation at 0 mV was described by a single exponential function with a time constant of 18.32 ± 1.87 ms (N = 16. The I-V relationship measured with Ca2+ as a charge carrier was shifted to the left when we applied a conditioning pre-pulse of up to -120 mV, indicating that a low voltage-activated current may be present in GH3 cells. Transient currents were first activated at -50 mV and peaked around -20 mV. The half-maximal voltage activation and the slope factors for the two conditions are -35.02 ± 2.4 and 6.7 ± 0.3 mV (pre-pulse of -120 mV, N = 15, and -27.0 ± 0.97 and 7.5 ± 0.7 mV (pre-pulse of -40 mV, N = 9. The 8-mV shift in the activation mid-point was statistically significant (P < 0.05. The tail currents decayed bi-exponentially suggesting two different T-type Ca2+ channel populations. RT-PCR revealed the presence of a1G (CaV3.1 and a1I (CaV3.3 T-type Ca2+ channel mRNA transcripts.

Determination of plasma density from data on the ion current to cylindrical and planar probes

Energy Technology Data Exchange (ETDEWEB)

Voloshin, D. G., E-mail: dvoloshin@mics.msu.su; Vasil’eva, A. N.; Kovalev, A. S.; Mankelevich, Yu. A.; Rakhimova, T. V. [Moscow State University, Skobeltsyn Nuclear Physics Institute (Russian Federation)

2016-12-15

To improve probe methods of plasma diagnostics, special probe measurements were performed and numerical models describing ion transport to a probe with allowance for collisions were developed. The current–voltage characteristics of cylindrical and planar probes were measured in an RF capacitive discharge in argon at a frequency of 81 MHz and plasma densities of 10{sup 10}–10{sup 11} cm{sup –3}, typical of modern RF reactors. 1D and 2D numerical models based on the particle-in-cell method with Monte Carlo collisions for simulating ion motion and the Boltzmann equilibrium for electrons are developed to describe current collection by a probe. The models were used to find the plasma density from the ion part of the current–voltage characteristic, study the effect of ion collisions, and verify simplified approaches to determining the plasma density. A 1D hydrodynamic model of the ion current to a cylindrical probe with allowance for ion collisions is proposed. For a planar probe, a method to determine the plasma density from the averaged numerical results is developed. A comparative analysis of different approaches to calculating the plasma density from the ion current to a probe is performed.

A current-mode voltage regulator with an embedded sub-threshold reference for a passive UHF RFID transponder

Energy Technology Data Exchange (ETDEWEB)

Liu Zhongqi [Department of Electronic Engineering, Tsinghua University, Beijing 100084 (China); Zhang Chun; Li Yongming; Wang Zhihua, E-mail: liu-zq04@mails.tsinghua.edu.c [Institute of Microelectronics, Tsinghua University, Beijing 100084 (China)

2010-06-15

This paper presents a current-mode voltage regulator for a passive UHF RFID transponder. The passive tag power is extracted from RF energy through the RF-to-DC rectifier. Due to huge variations of the incoming RF power, the rectifier output voltage should be regulated to achieve a stable power supply. By accurately controlling the current flowing into the load with an embedded sub-threshold reference, the regulated voltage varies in a range of 1-1.3 V from -20 to 80 {sup 0}C, and a bandwidth of about 100 kHz is achieved for a fast power recovery. The circuit is fabricated in UMC 0.18 {mu}m mixed-mode CMOS technology, and the current consumption is only 1 {mu}A. (semiconductor integrated circuits)

A current-mode voltage regulator with an embedded sub-threshold reference for a passive UHF RFID transponder

International Nuclear Information System (INIS)

Liu Zhongqi; Zhang Chun; Li Yongming; Wang Zhihua

2010-01-01

This paper presents a current-mode voltage regulator for a passive UHF RFID transponder. The passive tag power is extracted from RF energy through the RF-to-DC rectifier. Due to huge variations of the incoming RF power, the rectifier output voltage should be regulated to achieve a stable power supply. By accurately controlling the current flowing into the load with an embedded sub-threshold reference, the regulated voltage varies in a range of 1-1.3 V from -20 to 80 0 C, and a bandwidth of about 100 kHz is achieved for a fast power recovery. The circuit is fabricated in UMC 0.18 μm mixed-mode CMOS technology, and the current consumption is only 1 μA. (semiconductor integrated circuits)

Bidirectional current-voltage converters based on magnetostrictive/piezoelectric composites

NARCIS (Netherlands)

Jia, Y.; Or, S.W.; Chan, H.L.W.; Jiao, J.; Luo, H.; Van der Zwaag, S.

2009-01-01

We report a power supply-free, bidirectional electric current-voltage converter based on a coil-wound laminated composite of magnetostrictive alloy and piezoelectric crystal. An electric current applied to the coil induces a magnetic field, resulting in an electric voltage from the composite due to

A current to voltage converter for cryogenics using a CMOS operational amplifier

International Nuclear Information System (INIS)

Hayashi, K; Saitoh, K; Shibayama, Y; Shirahama, K

2009-01-01

We have constructed a versatile current to voltage (I-V) converter operating at liquid helium temperature, using a commercially available all-CMOS OPamp. It is valuable for cryogenic measurements of electrical current of nano-pico amperes, for example, in scanning probe microscopy. The I-V converter is thermally linked to liquid helium bath and self-heated up to 10.7 K. We have confirmed its capability of a transimpedance gain of 10 6 V/A and a bandwidth from DC to 200 kHz. In order to test the practical use for a frequency-modulation atomic force microscope, we have measured the resonance frequency shift of a quartz tuning fork at 32 kHz. In the operation of the I-V converter close to the sensor at liquid helium temperature, the signal-to-noise ratio has been improved to a factor of 13.6 compared to the operation at room temperature.

J/ψ production as a function of charged-particle pseudorapidity density in p-Pb collisions at √{sNN } = 5.02TeV

Science.gov (United States)

Adamová, D.; Aggarwal, M. M.; Aglieri Rinella, G.; Agnello, M.; Agrawal, N.; Ahammed, Z.; Ahmad, N.; Ahn, S. U.; Aiola, S.; Akindinov, A.; Alam, S. N.; Albuquerque, D. S. D.; Aleksandrov, D.; Alessandro, B.; Alexandre, D.; Alfaro Molina, R.; Alici, A.; Alkin, A.; Alme, J.; Alt, T.; Altsybeev, I.; Alves Garcia Prado, C.; An, M.; Andrei, C.; Andrews, H. A.; Andronic, A.; Anguelov, V.; Anson, C.; Antičić, T.; Antinori, F.; Antonioli, P.; Anwar, R.; Aphecetche, L.; Appelshäuser, H.; Arcelli, S.; Arnaldi, R.; Arnold, O. W.; Arsene, I. C.; Arslandok, M.; Audurier, B.; Augustinus, A.; Averbeck, R.; Azmi, M. D.; Badalà, A.; Baek, Y. W.; Bagnasco, S.; Bailhache, R.; Bala, R.; Baldisseri, A.; Ball, M.; Baral, R. C.; Barbano, A. M.; Barbera, R.; Barile, F.; Barioglio, L.; Barnaföldi, G. G.; Barnby, L. S.; Barret, V.; Bartalini, P.; Barth, K.; Bartke, J.; Bartsch, E.; Basile, M.; Bastid, N.; Basu, S.; Bathen, B.; Batigne, G.; Batista Camejo, A.; Batyunya, B.; Batzing, P. C.; Bearden, I. G.; Beck, H.; Bedda, C.; Behera, N. K.; Belikov, I.; Bellini, F.; Bello Martinez, H.; Bellwied, R.; Beltran, L. G. E.; Belyaev, V.; Bencedi, G.; Beole, S.; Bercuci, A.; Berdnikov, Y.; Berenyi, D.; Bertens, R. A.; Berzano, D.; Betev, L.; Bhasin, A.; Bhat, I. R.; Bhati, A. K.; Bhattacharjee, B.; Bhom, J.; Bianchi, L.; Bianchi, N.; Bianchin, C.; Bielčík, J.; Bielčíková, J.; Bilandzic, A.; Biro, G.; Biswas, R.; Biswas, S.; Blair, J. T.; Blau, D.; Blume, C.; Boca, G.; Bock, F.; Bogdanov, A.; Boldizsár, L.; Bombara, M.; Bonomi, G.; Bonora, M.; Book, J.; Borel, H.; Borissov, A.; Borri, M.; Botta, E.; Bourjau, C.; Braun-Munzinger, P.; Bregant, M.; Broker, T. A.; Browning, T. A.; Broz, M.; Brucken, E. J.; Bruna, E.; Bruno, G. E.; Budnikov, D.; Buesching, H.; Bufalino, S.; Buhler, P.; Buitron, S. A. I.; Buncic, P.; Busch, O.; Buthelezi, Z.; Butt, J. B.; Buxton, J. T.; Cabala, J.; Caffarri, D.; Caines, H.; Caliva, A.; Calvo Villar, E.; Camerini, P.; Capon, A. A.; Carena, F.; Carena, W.; Carnesecchi, F.; Castillo Castellanos, J.; Castro, A. J.; Casula, E. A. R.; Ceballos Sanchez, C.; Cerello, P.; Chang, B.; Chapeland, S.; Chartier, M.; Charvet, J. L.; Chattopadhyay, S.; Chattopadhyay, S.; Chauvin, A.; Cherney, M.; Cheshkov, C.; Cheynis, B.; Chibante Barroso, V.; Chinellato, D. D.; Cho, S.; Chochula, P.; Choi, K.; Chojnacki, M.; Choudhury, S.; Christakoglou, P.; Christensen, C. H.; Christiansen, P.; Chujo, T.; Chung, S. U.; Cicalo, C.; Cifarelli, L.; Cindolo, F.; Cleymans, J.; Colamaria, F.; Colella, D.; Collu, A.; Colocci, M.; Conesa Balbastre, G.; Conesa Del Valle, Z.; Connors, M. E.; Contreras, J. G.; Cormier, T. M.; Corrales Morales, Y.; Cortés Maldonado, I.; Cortese, P.; Cosentino, M. R.; Costa, F.; Costanza, S.; Crkovská, J.; Crochet, P.; Cuautle, E.; Cunqueiro, L.; Dahms, T.; Dainese, A.; Danisch, M. C.; Danu, A.; Das, D.; Das, I.; Das, S.; Dash, A.; Dash, S.; de, S.; de Caro, A.; de Cataldo, G.; de Conti, C.; de Cuveland, J.; de Falco, A.; de Gruttola, D.; De Marco, N.; de Pasquale, S.; de Souza, R. D.; Degenhardt, H. F.; Deisting, A.; Deloff, A.; Deplano, C.; Dhankher, P.; di Bari, D.; di Mauro, A.; di Nezza, P.; di Ruzza, B.; Diaz Corchero, M. A.; Dietel, T.; Dillenseger, P.; Divià, R.; Djuvsland, Ø.; Dobrin, A.; Domenicis Gimenez, D.; Dönigus, B.; Dordic, O.; Drozhzhova, T.; Dubey, A. K.; Dubla, A.; Ducroux, L.; Duggal, A. K.; Dupieux, P.; Ehlers, R. J.; Elia, D.; Endress, E.; Engel, H.; Epple, E.; Erazmus, B.; Erhardt, F.; Espagnon, B.; Esumi, S.; Eulisse, G.; Eum, J.; Evans, D.; Evdokimov, S.; Fabbietti, L.; Faivre, J.; Fantoni, A.; Fasel, M.; Feldkamp, L.; Feliciello, A.; Feofilov, G.; Ferencei, J.; Fernández Téllez, A.; Ferreiro, E. G.; Ferretti, A.; Festanti, A.; Feuillard, V. J. G.; Figiel, J.; Figueredo, M. A. S.; Filchagin, S.; Finogeev, D.; Fionda, F. M.; Fiore, E. M.; Floris, M.; Foertsch, S.; Foka, P.; Fokin, S.; Fragiacomo, E.; Francescon, A.; Francisco, A.; Frankenfeld, U.; Fronze, G. G.; Fuchs, U.; Furget, C.; Furs, A.; Fusco Girard, M.; Gaardhøje, J. J.; Gagliardi, M.; Gago, A. M.; Gajdosova, K.; Gallio, M.; Galvan, C. D.; Ganoti, P.; Gao, C.; Garabatos, C.; Garcia-Solis, E.; Garg, K.; Garg, P.; Gargiulo, C.; Gasik, P.; Gauger, E. F.; Gay Ducati, M. B.; Germain, M.; Ghosh, P.; Ghosh, S. K.; Gianotti, P.; Giubellino, P.; Giubilato, P.; Gladysz-Dziadus, E.; Glässel, P.; Goméz Coral, D. M.; Gomez Ramirez, A.; Gonzalez, A. S.; Gonzalez, V.; González-Zamora, P.; Gorbunov, S.; Görlich, L.; Gotovac, S.; Grabski, V.; Graczykowski, L. K.; Graham, K. L.; Greiner, L.; Grelli, A.; Grigoras, C.; Grigoriev, V.; Grigoryan, A.; Grigoryan, S.; Grion, N.; Gronefeld, J. M.; Grosa, F.; Grosse-Oetringhaus, J. F.; Grosso, R.; Gruber, L.; Grull, F. R.; Guber, F.; Guernane, R.; Guerzoni, B.; Gulbrandsen, K.; Gunji, T.; Gupta, A.; Gupta, R.; Guzman, I. B.; Haake, R.; Hadjidakis, C.; Hamagaki, H.; Hamar, G.; Hamon, J. C.; Harris, J. W.; Harton, A.; Hatzifotiadou, D.; Hayashi, S.; Heckel, S. T.; Hellbär, E.; Helstrup, H.; Herghelegiu, A.; Herrera Corral, G.; Herrmann, F.; Hess, B. A.; Hetland, K. F.; Hillemanns, H.; Hippolyte, B.; Hladky, J.; Hohlweger, B.; Horak, D.; Hosokawa, R.; Hristov, P.; Hughes, C.; Humanic, T. J.; Hussain, N.; Hussain, T.; Hutter, D.; Hwang, D. S.; Ilkaev, R.; Inaba, M.; Ippolitov, M.; Irfan, M.; Isakov, V.; Islam, M. S.; Ivanov, M.; Ivanov, V.; Izucheev, V.; Jacak, B.; Jacazio, N.; Jacobs, P. M.; Jadhav, M. B.; Jadlovska, S.; Jadlovsky, J.; Jaelani, S.; Jahnke, C.; Jakubowska, M. J.; Janik, M. A.; Jayarathna, P. H. S. Y.; Jena, C.; Jena, S.; Jercic, M.; Jimenez Bustamante, R. T.; Jones, P. G.; Jusko, A.; Kalinak, P.; Kalweit, A.; Kang, J. H.; Kaplin, V.; Kar, S.; Karasu Uysal, A.; Karavichev, O.; Karavicheva, T.; Karayan, L.; Karpechev, E.; Kebschull, U.; Keidel, R.; Keijdener, D. L. D.; Keil, M.; Ketzer, B.; Mohisin Khan, M.; Khan, P.; Khan, S. A.; Khanzadeev, A.; Kharlov, Y.; Khatun, A.; Khuntia, A.; Kielbowicz, M. M.; Kileng, B.; Kim, D. W.; Kim, D. J.; Kim, D.; Kim, H.; Kim, J. S.; Kim, J.; Kim, M.; Kim, M.; Kim, S.; Kim, T.; Kirsch, S.; Kisel, I.; Kiselev, S.; Kisiel, A.; Kiss, G.; Klay, J. L.; Klein, C.; Klein, J.; Klein-Bösing, C.; Klewin, S.; Kluge, A.; Knichel, M. L.; Knospe, A. G.; Kobdaj, C.; Kofarago, M.; Kollegger, T.; Kolojvari, A.; Kondratiev, V.; Kondratyeva, N.; Kondratyuk, E.; Konevskikh, A.; Kopcik, M.; Kour, M.; Kouzinopoulos, C.; Kovalenko, O.; Kovalenko, V.; Kowalski, M.; Koyithatta Meethaleveedu, G.; Králik, I.; Kravčáková, A.; Krivda, M.; Krizek, F.; Kryshen, E.; Krzewicki, M.; Kubera, A. M.; Kučera, V.; Kuhn, C.; Kuijer, P. G.; Kumar, A.; Kumar, J.; Kumar, L.; Kumar, S.; Kundu, S.; Kurashvili, P.; Kurepin, A.; Kurepin, A. B.; Kuryakin, A.; Kushpil, S.; Kweon, M. J.; Kwon, Y.; La Pointe, S. L.; La Rocca, P.; Lagana Fernandes, C.; Lakomov, I.; Langoy, R.; Lapidus, K.; Lara, C.; Lardeux, A.; Lattuca, A.; Laudi, E.; Lavicka, R.; Lazaridis, L.; Lea, R.; Leardini, L.; Lee, S.; Lehas, F.; Lehner, S.; Lehrbach, J.; Lemmon, R. C.; Lenti, V.; Leogrande, E.; León Monzón, I.; Lévai, P.; Li, S.; Li, X.; Lien, J.; Lietava, R.; Lindal, S.; Lindenstruth, V.; Lippmann, C.; Lisa, M. A.; Litichevskyi, V.; Ljunggren, H. M.; Llope, W. J.; Lodato, D. F.; Loenne, P. I.; Loginov, V.; Loizides, C.; Loncar, P.; Lopez, X.; López Torres, E.; Lowe, A.; Luettig, P.; Lunardon, M.; Luparello, G.; Lupi, M.; Lutz, T. H.; Maevskaya, A.; Mager, M.; Mahajan, S.; Mahmood, S. M.; Maire, A.; Majka, R. D.; Malaev, M.; Maldonado Cervantes, I.; Malinina, L.; Mal'Kevich, D.; Malzacher, P.; Mamonov, A.; Manko, V.; Manso, F.; Manzari, V.; Mao, Y.; Marchisone, M.; Mareš, J.; Margagliotti, G. V.; Margotti, A.; Margutti, J.; Marín, A.; Markert, C.; Marquard, M.; Martin, N. A.; Martin Blanco, J.; Martinengo, P.; Martinez, J. A. L.; Martínez, M. I.; Martínez García, G.; Martinez Pedreira, M.; Mas, A.; Masciocchi, S.; Masera, M.; Masoni, A.; Mastroserio, A.; Mathis, A. M.; Matyja, A.; Mayer, C.; Mazer, J.; Mazzilli, M.; Mazzoni, M. A.; Meddi, F.; Melikyan, Y.; Menchaca-Rocha, A.; Meninno, E.; Mercado Pérez, J.; Meres, M.; Mhlanga, S.; Miake, Y.; Mieskolainen, M. M.; Mihaylov, D. L.; Mikhaylov, K.; Milano, L.; Milosevic, J.; Mischke, A.; Mishra, A. N.; Miśkowiec, D.; Mitra, J.; Mitu, C. M.; Mohammadi, N.; Mohanty, B.; Montes, E.; Moreira de Godoy, D. A.; Moreno, L. A. P.; Moretto, S.; Morreale, A.; Morsch, A.; Muccifora, V.; Mudnic, E.; Mühlheim, D.; Muhuri, S.; Mukherjee, M.; Mulligan, J. D.; Munhoz, M. G.; Münning, K.; Munzer, R. H.; Murakami, H.; Murray, S.; Musa, L.; Musinsky, J.; Myers, C. J.; Naik, B.; Nair, R.; Nandi, B. K.; Nania, R.; Nappi, E.; Naru, M. U.; Natal da Luz, H.; Nattrass, C.; Navarro, S. R.; Nayak, K.; Nayak, R.; Nayak, T. K.; Nazarenko, S.; Nedosekin, A.; Negrao de Oliveira, R. A.; Nellen, L.; Nesbo, S. V.; Ng, F.; Nicassio, M.; Niculescu, M.; Niedziela, J.; Nielsen, B. S.; Nikolaev, S.; Nikulin, S.; Nikulin, V.; Noferini, F.; Nomokonov, P.; Nooren, G.; Noris, J. C. C.; Norman, J.; Nyanin, A.; Nystrand, J.; Oeschler, H.; Oh, S.; Ohlson, A.; Okubo, T.; Olah, L.; Oleniacz, J.; Oliveira da Silva, A. C.; Oliver, M. H.; Onderwaater, J.; Oppedisano, C.; Orava, R.; Oravec, M.; Ortiz Velasquez, A.; Oskarsson, A.; Otwinowski, J.; Oyama, K.; Pachmayer, Y.; Pacik, V.; Pagano, D.; Pagano, P.; Paić, G.; Palni, P.; Pan, J.; Pandey, A. K.; Panebianco, S.; Papikyan, V.; Pappalardo, G. S.; Pareek, P.; Park, J.; Park, W. J.; Parmar, S.; Passfeld, A.; Pathak, S. P.; Paticchio, V.; Patra, R. N.; Paul, B.; Pei, H.; Peitzmann, T.; Peng, X.; Pereira, L. G.; Pereira da Costa, H.; Peresunko, D.; Perez Lezama, E.; Peskov, V.; Pestov, Y.; Petráček, V.; Petrov, V.; Petrovici, M.; Petta, C.; Pezzi, R. P.; Piano, S.; Pikna, M.; Pillot, P.; Pimentel, L. O. D. L.; Pinazza, O.; Pinsky, L.; Piyarathna, D. B.; Płoskoń, M.; Planinic, M.; Pluta, J.; Pochybova, S.; Podesta-Lerma, P. L. M.; Poghosyan, M. G.; Polichtchouk, B.; Poljak, N.; Poonsawat, W.; Pop, A.; Poppenborg, H.; Porteboeuf-Houssais, S.; Porter, J.; Pospisil, J.; Pozdniakov, V.; Prasad, S. K.; Preghenella, R.; Prino, F.; Pruneau, C. A.; Pshenichnov, I.; Puccio, M.; Puddu, G.; Pujahari, P.; Punin, V.; Putschke, J.; Qvigstad, H.; Rachevski, A.; Raha, S.; Rajput, S.; Rak, J.; Rakotozafindrabe, A.; Ramello, L.; Rami, F.; Rana, D. B.; Raniwala, R.; Raniwala, S.; Räsänen, S. S.; Rascanu, B. T.; Rathee, D.; Ratza, V.; Ravasenga, I.; Read, K. F.; Redlich, K.; Rehman, A.; Reichelt, P.; Reidt, F.; Ren, X.; Renfordt, R.; Reolon, A. R.; Reshetin, A.; Reygers, K.; Riabov, V.; Ricci, R. A.; Richert, T.; Richter, M.; Riedler, P.; Riegler, W.; Riggi, F.; Ristea, C.; Rodríguez Cahuantzi, M.; Røed, K.; Rogochaya, E.; Rohr, D.; Röhrich, D.; Rokita, P. S.; Ronchetti, F.; Ronflette, L.; Rosnet, P.; Rossi, A.; Rotondi, A.; Roukoutakis, F.; Roy, A.; Roy, C.; Roy, P.; Rubio Montero, A. J.; Rui, R.; Russo, R.; Rustamov, A.; Ryabinkin, E.; Ryabov, Y.; Rybicki, A.; Saarinen, S.; Sadhu, S.; Sadovsky, S.; Šafařík, K.; Saha, S. K.; Sahlmuller, B.; Sahoo, B.; Sahoo, P.; Sahoo, R.; Sahoo, S.; Sahu, P. K.; Saini, J.; Sakai, S.; Saleh, M. A.; Salzwedel, J.; Sambyal, S.; Samsonov, V.; Sandoval, A.; Sarkar, D.; Sarkar, N.; Sarma, P.; Sas, M. H. P.; Scapparone, E.; Scarlassara, F.; Scharenberg, R. P.; Scheid, H. S.; Schiaua, C.; Schicker, R.; Schmidt, C.; Schmidt, H. R.; Schmidt, M. O.; Schmidt, M.; Schuchmann, S.; Schukraft, J.; Schutz, Y.; Schwarz, K.; Schweda, K.; Scioli, G.; Scomparin, E.; Scott, R.; Šefčík, M.; Seger, J. E.; Sekiguchi, Y.; Sekihata, D.; Selyuzhenkov, I.; Senosi, K.; Senyukov, S.; Serradilla, E.; Sett, P.; Sevcenco, A.; Shabanov, A.; Shabetai, A.; Shadura, O.; Shahoyan, R.; Shangaraev, A.; Sharma, A.; Sharma, A.; Sharma, M.; Sharma, M.; Sharma, N.; Sheikh, A. I.; Shigaki, K.; Shou, Q.; Shtejer, K.; Sibiriak, Y.; Siddhanta, S.; Sielewicz, K. M.; Siemiarczuk, T.; Silvermyr, D.; Silvestre, C.; Simatovic, G.; Simonetti, G.; Singaraju, R.; Singh, R.; Singhal, V.; Sinha, T.; Sitar, B.; Sitta, M.; Skaali, T. B.; Slupecki, M.; Smirnov, N.; Snellings, R. J. M.; Snellman, T. W.; Song, J.; Song, M.; Soramel, F.; Sorensen, S.; Sozzi, F.; Spiriti, E.; Sputowska, I.; Srivastava, B. K.; Stachel, J.; Stan, I.; Stankus, P.; Stenlund, E.; Stiller, J. H.; Stocco, D.; Strmen, P.; Suaide, A. A. P.; Sugitate, T.; Suire, C.; Suleymanov, M.; Suljic, M.; Sultanov, R.; Šumbera, M.; Sumowidagdo, S.; Suzuki, K.; Swain, S.; Szabo, A.; Szarka, I.; Szczepankiewicz, A.; Szymanski, M.; Tabassam, U.; Takahashi, J.; Tambave, G. J.; Tanaka, N.; Tarhini, M.; Tariq, M.; Tarzila, M. G.; Tauro, A.; Tejeda Muñoz, G.; Telesca, A.; Terasaki, K.; Terrevoli, C.; Teyssier, B.; Thakur, D.; Thakur, S.; Thomas, D.; Tieulent, R.; Tikhonov, A.; Timmins, A. R.; Toia, A.; Tripathy, S.; Trogolo, S.; Trombetta, G.; Trubnikov, V.; Trzaska, W. H.; Trzeciak, B. A.; Tsuji, T.; Tumkin, A.; Turrisi, R.; Tveter, T. S.; Ullaland, K.; Umaka, E. N.; Uras, A.; Usai, G. L.; Utrobicic, A.; Vala, M.; van der Maarel, J.; van Hoorne, J. W.; van Leeuwen, M.; Vanat, T.; Vande Vyvre, P.; Varga, D.; Vargas, A.; Vargyas, M.; Varma, R.; Vasileiou, M.; Vasiliev, A.; Vauthier, A.; Vázquez Doce, O.; Vechernin, V.; Veen, A. M.; Velure, A.; Vercellin, E.; Vergara Limón, S.; Vernet, R.; Vértesi, R.; Vickovic, L.; Vigolo, S.; Viinikainen, J.; Vilakazi, Z.; Villalobos Baillie, O.; Villatoro Tello, A.; Vinogradov, A.; Vinogradov, L.; Virgili, T.; Vislavicius, V.; Vodopyanov, A.; Völkl, M. A.; Voloshin, K.; Voloshin, S. A.; Volpe, G.; von Haller, B.; Vorobyev, I.; Voscek, D.; Vranic, D.; Vrláková, J.; Wagner, B.; Wagner, J.; Wang, H.; Wang, M.; Watanabe, D.; Watanabe, Y.; Weber, M.; Weber, S. G.; Weiser, D. F.; Wessels, J. P.; Westerhoff, U.; Whitehead, A. M.; Wiechula, J.; Wikne, J.; Wilk, G.; Wilkinson, J.; Willems, G. A.; Williams, M. C. S.; Windelband, B.; Winn, M.; Witt, W. E.; Yalcin, S.; Yang, P.; Yano, S.; Yin, Z.; Yokoyama, H.; Yoo, I.-K.; Yoon, J. H.; Yurchenko, V.; Zaccolo, V.; Zaman, A.; Zampolli, C.; Zanoli, H. J. C.; Zardoshti, N.; Zarochentsev, A.; Závada, P.; Zaviyalov, N.; Zbroszczyk, H.; Zhalov, M.; Zhang, H.; Zhang, X.; Zhang, Y.; Zhang, C.; Zhang, Z.; Zhao, C.; Zhigareva, N.; Zhou, D.; Zhou, Y.; Zhou, Z.; Zhu, H.; Zhu, J.; Zhu, X.; Zichichi, A.; Zimmermann, A.; Zimmermann, M. B.; Zimmermann, S.; Zinovjev, G.; Zmeskal, J.; Alice Collaboration<

2018-01-01

We report measurements of the inclusive J/ψ yield and average transverse momentum as a function of charged-particle pseudorapidity density dNch / dη in p-Pb collisions at √{sNN } = 5.02TeV with ALICE at the LHC. The observables are normalised to their corresponding averages in non-single diffractive events. An increase of the normalised J/ψ yield with normalised dNch / dη, measured at mid-rapidity, is observed at mid-rapidity and backward rapidity. At forward rapidity, a saturation of the relative yield is observed for high charged-particle multiplicities. The normalised average transverse momentum at forward and backward rapidities increases with multiplicity at low multiplicities and saturates beyond moderate multiplicities. In addition, the forward-to-backward nuclear modification factor ratio is also reported, showing an increasing suppression of J/ψ production at forward rapidity with respect to backward rapidity for increasing charged-particle multiplicity.

Definition of current density in the presence of a non-local potential.

Science.gov (United States)

Li, Changsheng; Wan, Langhui; Wei, Yadong; Wang, Jian

2008-04-16

In the presence of a non-local potential arising from electron-electron interaction, the conventional definition of current density J(c) = (e/2m)([(p-eA)ψ](*)ψ-ψ(*)[(p-eA)ψ]) cannot satisfy the condition of current conservation, i.e., [Formula: see text] in the steady state. In order to solve this problem, we give a new definition of current density including the contribution due to the non-local potential. We show that the current calculated based on the new definition of current density conserves the current and is the same as that obtained from the Landauer-Büttiker formula. Examples are given to demonstrate our results.

Current-voltage model of LED light sources

DEFF Research Database (Denmark)

Beczkowski, Szymon; Munk-Nielsen, Stig

2012-01-01

Amplitude modulation is rarely used for dimming light-emitting diodes in polychromatic luminaires due to big color shifts caused by varying magnitude of LED driving current and nonlinear relationship between intensity of a diode and driving current. Current-voltage empirical model of light...

High-voltage pulsed generator for dynamic fragmentation of rocks.

Science.gov (United States)

Kovalchuk, B M; Kharlov, A V; Vizir, V A; Kumpyak, V V; Zorin, V B; Kiselev, V N

2010-10-01

A portable high-voltage (HV) pulsed generator has been designed for rock fragmentation experiments. The generator can be used also for other technological applications. The installation consists of low voltage block, HV block, coaxial transmission line, fragmentation chamber, and control system block. Low voltage block of the generator, consisting of a primary capacitor bank (300 μF) and a thyristor switch, stores pulse energy and transfers it to the HV block. The primary capacitor bank stores energy of 600 J at the maximum charging voltage of 2 kV. HV block includes HV pulsed step up transformer, HV capacitive storage, and two electrode gas switch. The following technical parameters of the generator were achieved: output voltage up to 300 kV, voltage rise time of ∼50 ns, current amplitude of ∼6 kA with the 40 Ω active load, and ∼20 kA in a rock fragmentation regime (with discharge in a rock-water mixture). Typical operation regime is a burst of 1000 pulses with a frequency of 10 Hz. The operation process can be controlled within a wide range of parameters. The entire installation (generator, transmission line, treatment chamber, and measuring probes) is designed like a continuous Faraday's cage (complete shielding) to exclude external electromagnetic perturbations.

High-voltage pulsed generator for dynamic fragmentation of rocks

Science.gov (United States)

Kovalchuk, B. M.; Kharlov, A. V.; Vizir, V. A.; Kumpyak, V. V.; Zorin, V. B.; Kiselev, V. N.

2010-10-01

A portable high-voltage (HV) pulsed generator has been designed for rock fragmentation experiments. The generator can be used also for other technological applications. The installation consists of low voltage block, HV block, coaxial transmission line, fragmentation chamber, and control system block. Low voltage block of the generator, consisting of a primary capacitor bank (300 μF) and a thyristor switch, stores pulse energy and transfers it to the HV block. The primary capacitor bank stores energy of 600 J at the maximum charging voltage of 2 kV. HV block includes HV pulsed step up transformer, HV capacitive storage, and two electrode gas switch. The following technical parameters of the generator were achieved: output voltage up to 300 kV, voltage rise time of ˜50 ns, current amplitude of ˜6 kA with the 40 Ω active load, and ˜20 kA in a rock fragmentation regime (with discharge in a rock-water mixture). Typical operation regime is a burst of 1000 pulses with a frequency of 10 Hz. The operation process can be controlled within a wide range of parameters. The entire installation (generator, transmission line, treatment chamber, and measuring probes) is designed like a continuous Faraday's cage (complete shielding) to exclude external electromagnetic perturbations.

Simple, high current, antimony ion source

International Nuclear Information System (INIS)

Sugiura, H.

1979-01-01

A simple metal ion source capable of producing a continuous, uncontaminated, high current beam of Sb ions is presented. It produced a total ion current of 200 μA at 1 kV extraction voltage. A discharge occurred in the source at a pressure of 6 x 10 -4 Torr. The ion current extracted from the source increased with the 3/2 power of the extraction voltage. The perveance of the source and ion density in the plasma were 8 x 10 -9 and 1.8 x 10 11 cm -3 , respectively

Frequency and voltage dependent electrical responses of poly(triarylamine thin film-based organic Schottky diode

Directory of Open Access Journals (Sweden)

Mohamad Khairul Anuar

2017-01-01

Full Text Available A metal-organic-metal (MOM type Schottky diode based on poly (triarylamine (PTAA thin films has been fabricated by using the spin coating method. Investigation of the frequency dependent conductance-voltage (G-V-f and capacitance-voltage (C-V-f characteristics of the ITO/PTAA/Al MOM type diode were carried out in the frequency range from 12 Hz to 100 kHz using an LCR meter at room temperature. The frequency and bias voltage dependent electrical response were determined by admittance-based measured method in terms of an equivalent circuit model of the parallel combination of resistance and capacitance (RC circuit. Investigation revealed that the conductance is frequency and a bias voltage dependent in which conductance continuous increase as the increasing frequency, respectively. Meanwhile, the capacitance is dependent on frequency up to a certain value of frequency (100 Hz but decreases at high frequency (1 – 10 kHz. The interface state density in the Schottky diode was determined from G-V and C-V characteristics. The interface state density has values almost constant of 2.8 x 1012 eV−1cm−2 with slightly decrease by increasing frequencies. Consequently, both series resistance and interface trap density were found to decrease with increasing frequency. The frequency dependence of the electrical responses is attributed the distribution density of interface states that could follow the alternating current (AC signal.

Study the Output Characteristics of a 90 kJ Filippove-Type Plasma Focus

Science.gov (United States)

Sadat Kiai, S. M.; Talaei, A.; Adlparvar, S.; Zirak, A.; Elahi, M.; Safarian, A.; Farhangi, S.; Alhooie, S.; Dabirzadeh, A. A.; Khalaj, M. M.; Mahlooji, M. S.; Talaei, M.; KaKaei, S.; Sheibani, S.; Kashani, A.; Zahedi, F.

2010-08-01

The output characteristics of a Filippove-Type plasma focus "Dena" (288 μF, 25 kV, 90 kJ) is numerically investigated by considering the voltage, current, current derivative, and maximum current as a function of capacitor bank energy in the constant Argon gas pressure and compared to the experiment. It is shown that increase on the bank energy leads to the increment on the maximum current and decrement on the pinch time.

Identifying parasitic current pathways in CIGS solar cells by modelling dark J-V response

NARCIS (Netherlands)

Williams, B.L.; Smit, S.; Kniknie, B.J.; Bakker, K.J.; Keuning, W.; Kessels, W.M.M.; Schropp, R.E.I.; Creatore, M.

2015-01-01

An equivalent circuit model, which allows for the presence of three types of shunting pathways, has been developed to describe the dark J-V characteristics in CIGS solar cells. Excellent agreement between the model and experimental data was apparent throughout a temperature range of 183-323K.

The Investigation of Field Plate Design in 500 V High Voltage NLDMOS

Directory of Open Access Journals (Sweden)

Donghua Liu

2015-01-01

Full Text Available This paper presents a 500 V high voltage NLDMOS with breakdown voltage (VBD improved by field plate technology. Effect of metal field plate (MFP and polysilicon field plate (PFP on breakdown voltage improvement of high voltage NLDMOS is studied. The coeffect of MFP and PFP on drain side has also been investigated. A 500 V NLDMOS is demonstrated with a 37 μm drift length and optimized MFP and PFP design. Finally the breakdown voltage 590 V and excellent on-resistance performance (Rsp = 7.88 ohm * mm2 are achieved.

Computation of the current density in nonlinear materials subjected to large current pulses

International Nuclear Information System (INIS)

Hodgdon, M.L.; Hixson, R.S.; Parsons, W.M.

1991-01-01

This paper reports that the finite element method and the finite difference method are used to calculate the current distribution in two nonlinear conductors. The first conductor is a small ferromagnetic wire subjected to a current pulse that rises to 10,000 Amperes in 10 microseconds. Results from the transient thermal and transient magnetic solvers of the finite element code FLUX2D are used to compute the current density in the wire. The second conductor is a metal oxide varistor. Maxwell's equations, Ohm's law and the varistor relation for the resistivity and the current density of p = αj -β are used to derive a nonlinear differential equation. The solutions of the differential equation are obtained by a finite difference approximation and a shooting method. The behavior predicted by these calculations is in agreement with experiments

High-Capacity Cathode Material with High Voltage for Li-Ion Batteries.

Science.gov (United States)

Shi, Ji-Lei; Xiao, Dong-Dong; Ge, Mingyuan; Yu, Xiqian; Chu, Yong; Huang, Xiaojing; Zhang, Xu-Dong; Yin, Ya-Xia; Yang, Xiao-Qing; Guo, Yu-Guo; Gu, Lin; Wan, Li-Jun

2018-03-01

Electrochemical energy storage devices with a high energy density are an important technology in modern society, especially for electric vehicles. The most effective approach to improve the energy density of batteries is to search for high-capacity electrode materials. According to the concept of energy quality, a high-voltage battery delivers a highly useful energy, thus providing a new insight to improve energy density. Based on this concept, a novel and successful strategy to increase the energy density and energy quality by increasing the discharge voltage of cathode materials and preserving high capacity is proposed. The proposal is realized in high-capacity Li-rich cathode materials. The average discharge voltage is increased from 3.5 to 3.8 V by increasing the nickel content and applying a simple after-treatment, and the specific energy is improved from 912 to 1033 Wh kg -1 . The current work provides an insightful universal principle for developing, designing, and screening electrode materials for high energy density and energy quality. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Current-Voltage Characteristic of Nanosecond - Duration Relativistic Electron Beam

Science.gov (United States)

Andreev, Andrey

2005-10-01

The pulsed electron-beam accelerator SINUS-6 was used to measure current-voltage characteristic of nanosecond-duration thin annular relativistic electron beam accelerated in vacuum along axis of a smooth uniform metal tube immersed into strong axial magnetic field. Results of these measurements as well as results of computer simulations performed using 3D MAGIC code show that the electron-beam current dependence on the accelerating voltage at the front of the nanosecond-duration pulse is different from the analogical dependence at the flat part of the pulse. In the steady-state (flat) part of the pulse), the measured electron-beam current is close to Fedosov current [1], which is governed by the conservation law of an electron moment flow for any constant voltage. In the non steady-state part (front) of the pulse, the electron-beam current is higher that the appropriate, for a giving voltage, steady-state (Fedosov) current. [1] A. I. Fedosov, E. A. Litvinov, S. Ya. Belomytsev, and S. P. Bugaev, ``Characteristics of electron beam formed in diodes with magnetic insulation,'' Soviet Physics Journal (A translation of Izvestiya VUZ. Fizika), vol. 20, no. 10, October 1977 (April 20, 1978), pp.1367-1368.

Effect of current density on the anodization of zircaloy-2

International Nuclear Information System (INIS)

Bhaskar Reddy, P.; Panasa Reddy, A.

2005-01-01

The effect of current density on the kinetics of anodization of Zircaloy-2 in 0.1 M potassium tartarate have been studied at various constant current densities ranging from 2 to 10 mA.cm -2 and at room temperature to investigate the exponential dependence of ionic current density on the field across the oxide. The rate of anodic film formation (dV/dt), the current efficiency the differential field of formation (F) and the ionic current density (i i ) were calculated. It was found that all these parameters were increased with increase of current density. The induction period was decreased with the increase of current density. It was also found that the plot of log (ionic current density) vs differential field gave fairly a linear relationship. The kinetic parameters, half jump distance (a) and height of the energy barrier (W) were calculated. (author)

A Novel Phase-Transformation Activation Process toward Ni-Mn-O Nanoprism Arrays for 2.4 V Ultrahigh-Voltage Aqueous Supercapacitors.

Science.gov (United States)

Zuo, Wenhua; Xie, Chaoyue; Xu, Pan; Li, Yuanyuan; Liu, Jinping

2017-09-01

One of the key challenges of aqueous supercapacitors is the relatively low voltage (0.8-2.0 V), which significantly limits the energy density and feasibility of practical applications of the device. Herein, this study reports a novel Ni-Mn-O solid-solution cathode to widen the supercapacitor device voltage, which can potentially suppress the oxygen evolution reaction and thus be operated stably within a quite wide potential window of 0-1.4 V (vs saturated calomel electrode) after a simple but unique phase-transformation electrochemical activation. The solid-solution structure is designed with an ordered array architecture and in situ nanocarbon modification to promote the charge/mass transfer kinetics. By paring with commercial activated carbon anode, an ultrahigh voltage asymmetric supercapacitor in neutral aqueous LiCl electrolyte is assembled (2.4 V; among the highest for single-cell supercapacitors). Moreover, by using a polyvinyl alcohol (PVA)-LiCl electrolyte, a 2.4 V hydrogel supercapacitor is further developed with an excellent Coulombic efficiency, good rate capability, and remarkable cycle life (>5000 cycles; 95.5% capacity retention). Only one cell can power the light-emitting diode indicator brightly. The resulting maximum volumetric energy density is 4.72 mWh cm -3 , which is much superior to previous thin-film manganese-oxide-based supercapacitors and even battery-supercapacitor hybrid devices. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Defect States in InP/InGaAs/InP Heterostructures by Current-Voltage Characteristics and Deep Level Transient Spectroscopy.

Science.gov (United States)

Vu, Thi Kim Oanh; Lee, Kyoung Su; Lee, Sang Jun; Kim, Eun Kyu

2018-09-01

We studied defect states in In0.53Ga0.47As/InP heterojunctions with interface control by group V atoms during metalorganic chemical vapor (MOCVD) deposition. From deep level transient spectroscopy (DLTS) measurements, two defects with activation energies of 0.28 eV (E1) and 0.15 eV (E2) below the conduction band edge, were observed. The defect density of E1 for In0.53Ga0.47As/InP heterojunctions with an addition of As and P atoms was about 1.5 times higher than that of the heterojunction added P atom only. From the temperature dependence of current- voltage characteristics, the thermal activation energies of In0.53Ga0.47As/InP of heterojunctions were estimated to be 0.27 and 0.25 eV, respectively. It appeared that the reverse light current for In0.53Ga0.47As/InP heterojunction added P atom increased only by illumination of a 940 nm-LED light source. These results imply that only the P addition at the interface can enhance the quality of InGaAs/InP heterojunction.

Model Development for Current–Voltage and Transconductance Characteristics of Normally-off AlN/GaN MOSHEMT

International Nuclear Information System (INIS)

Swain, R.; Jena, K.; Lenka, T. R.

2016-01-01

In this paper, an AlN/GaN-based MOSHEMT is proposed, in accordance to this, a charge control model has been developed analytically and simulated with MATLAB to predict the characteristics of threshold voltage, drain currents and transconductance. The physics based models for 2DEG density, threshold voltage and quantum capacitance in the channel has been put forward. By using these developed models, the drain current for both linear and saturation models is derived. The predicted threshold voltage with the variation of barrier thickness has been plotted. A positive threshold voltage can be obtained by decreasing the barrier thickness which builds up the foundation for enhancement mode MOSHEMT devices. The predicted I_d–V_g_s, I_d–V_d_s and transconductance characteristics show an excellent agreement with the experimental results and hence validate the model.

A Protection System of High Voltage Generator Electron Acceleration foran Electron Beam Machine 500 kV/10 mA

International Nuclear Information System (INIS)

Prajitno; Sudiyanto; Djaziman

2000-01-01

Hardwired electronic circuit of protection system to prevent high voltagegenerator EBM have been made. The protection system consists of processparameters such as safety parameter, dynamic logic circuits and interlockrelay drive circuits. Safety parameters using transducer which is factorymade so that the accuracy and reliability could be controlled. A good resultof electronic circuit has been tested which cover: water flow and temperaturemonitoring, grid current, anode current, anode voltage and logic control. Therange of monitoring temperature from 30 o C to 100 o C with output voltagefrom 1.47 V to 5.38 V. The voltage output of water flow monitoring is 0.083 Vto 3.391 V which is equivalent to 1.5 - 30 l/min. Response time of the logiccontrol about 10 ms. By using design and construction of protection system,have been through about the security aspect of high voltage generatoroperation and also system will give early warning if the disturbance andabnormal operation occurred. (author)

A current to voltage converter for cryogenics using a CMOS operational amplifier

Energy Technology Data Exchange (ETDEWEB)

Hayashi, K; Saitoh, K; Shibayama, Y; Shirahama, K [Department of Physics, Keio University, Yokohama 223-8522 (Japan)], E-mail: khayashi@a2.keio.jp

2009-02-01

We have constructed a versatile current to voltage (I-V) converter operating at liquid helium temperature, using a commercially available all-CMOS OPamp. It is valuable for cryogenic measurements of electrical current of nano-pico amperes, for example, in scanning probe microscopy. The I-V converter is thermally linked to liquid helium bath and self-heated up to 10.7 K. We have confirmed its capability of a transimpedance gain of 10{sup 6} V/A and a bandwidth from DC to 200 kHz. In order to test the practical use for a frequency-modulation atomic force microscope, we have measured the resonance frequency shift of a quartz tuning fork at 32 kHz. In the operation of the I-V converter close to the sensor at liquid helium temperature, the signal-to-noise ratio has been improved to a factor of 13.6 compared to the operation at room temperature.

A dynamic Monte Carlo study of anomalous current voltage behaviour in organic solar cells

International Nuclear Information System (INIS)

Feron, K.; Fell, C. J.; Zhou, X.; Belcher, W. J.; Dastoor, P. C.

2014-01-01

We present a dynamic Monte Carlo (DMC) study of s-shaped current-voltage (I-V) behaviour in organic solar cells. This anomalous behaviour causes a substantial decrease in fill factor and thus power conversion efficiency. We show that this s-shaped behaviour is induced by charge traps that are located at the electrode interface rather than in the bulk of the active layer, and that the anomaly becomes more pronounced with increasing trap depth or density. Furthermore, the s-shape anomaly is correlated with interface recombination, but not bulk recombination, thus highlighting the importance of controlling the electrode interface. While thermal annealing is known to remove the s-shape anomaly, the reason has been not clear, since these treatments induce multiple simultaneous changes to the organic solar cell structure. The DMC modelling indicates that it is the removal of aluminium clusters at the electrode, which act as charge traps, that removes the anomalous I-V behaviour. Finally, this work shows that the s-shape becomes less pronounced with increasing electron-hole recombination rate; suggesting that efficient organic photovoltaic material systems are more susceptible to these electrode interface effects

Voltage-current characteristics of multiterminal HVDC-VSC for offshore wind farms

Energy Technology Data Exchange (ETDEWEB)

Gomis-Bellmunt, Oriol [Centre d' Innovacio Tecnologica en Convertidors Estatics i Accionaments (CITCEA-UPC), Universitat Politecnica de Catalunya UPC, Av. Diagonal, 647, Pl. 2., 08028 Barcelona (Spain); IREC Catalonia Institute for Energy Research, Barcelona (Spain); Liang, Jun; Ekanayake, Janaka; Jenkins, Nicholas [School of Engineering, Cardiff University, Queen' s Buildings, The Parade, Cardiff CF24 3AA, Wales (United Kingdom)

2011-02-15

Voltage-current characteristics and equilibrium points for the DC voltages of multiterminal HVDC systems using voltage source converters are discussed. The wind farm rectifiers and grid connected inverters are analyzed through their operating modes, governing equations and graphical characteristics. Using the converter equations and the HVDC grid conductance matrix the equilibrium voltages and currents are found. Case studies are presented considering wind power generation, loss of a converter and voltage sags in the AC grid. (author)

Flexible Compensation of Voltage and Current Unbalance and Harmonics in Microgrids

Directory of Open Access Journals (Sweden)

Seyyed Yousef Mousazadeh Mousavi

2017-10-01

Full Text Available In recent years, the harmonics and unbalance problems endanger the voltage and current quality of power systems, due to increasing usage of nonlinear and unbalanced loads. Use of Distributed Generation (DG-interfacing inverters is proposed for voltage or current compensation. In this paper, a flexible control method is proposed to compensate voltage and current unbalance and harmonics using the distributed generation (DG-interfacing inverters. This method is applicable to both grid-connected and islanded Microgrids (MGs. In the proposed method, not only the proper control of active and reactive powers can be achieved, but also there is flexibility in compensating the voltage or current quality problems at DG terminals or Points of Common Coupling (PCCs. This control strategy consists of active and reactive power controllers and a voltage/current quality-improvement block. The controller is designed in a stationary (αβ frame. An extensive simulation study has been performed and the results demonstrate the effectiveness of the proposed control scheme. Depending on the compensation modes, the harmonics and unbalance compensation of DG output current, MG-injected current to the grid, as well as PCC and DG voltages, can be achieved in grid-connected operation of MG while in the islanded operation, and the PCC and DG voltages compensation can be obtained through the proposed control scheme.

Current-voltage characteristic of a resonant tunneling diode under electromagnetic radiation

Directory of Open Access Journals (Sweden)

N Hatefi Kargan

2013-09-01

Full Text Available  In this paper, current-voltage characteristic of a resonant tunneling diode under electromagnetic radiation has been calculated and compared with the results when there is no electromagnetic radiation. For calculating current -voltage characteristic, it is required to calculate the transmission coefficient of electrons from the well and barrier structures of this device. For calculating the transmission coefficient of electrons at the presence of electromagnetic radiation, Finite Difference Time Domain (FDTD method has been used and when there is no electromagnetic radiation Transfer Matrix Method (TMM and finite diffirence time domain method have been used. The results show that the presence of electromagnetic radiation causes resonant states other than principal resonant state (without presence of electromagnetic radiation to appear on the transmition coefficient curve where they are in distances from the principal peak and from each other. Also, the presence of electromagnetic radiation causes peaks other than principal peak to appear on the current-voltage characteristics of the device. Under electromagnetic radiation, the number of peaks on the current-voltage curve is smaller than the number of peaks on the current-voltage transmission coefficient. This is due to the fact that current-voltage curve is the result of integration on the energy of electrons, Thus, the sharper and low height peaks on the transmission coefficient do not appear on the current-voltage characteristic curve.

Total dose behavior of partially depleted SOI dynamic threshold voltage MOS (DTMOS) for very low supply voltage applications (0.6 - 1 V)

International Nuclear Information System (INIS)

Ferlet-Cavrois, V.; Musseau, O.; Leray, J.L.; Faynot, O.; Raynaud, C.; Pelloie, J.L.

1999-01-01

In this paper, we presented two DTMOS architectures processed with a partially depleted SOI technology. The first architecture, DTMOS without limiting transistor, is dedicated to ultra-low voltage applications, at 0.6 V. For 1V applications, the second architecture, DTMOS with limiting transistor, needs an additional transistor to limit the body-source diode current. The total dose irradiation of both DTMOS architectures induces no change of the drain current, but an increase of the body-source diode current. Total dose induced trapped charge in the buried oxide increases the body potential of the DTMOS transistor. It induces an increase of the current flow at the back interface of the silicon film. Irradiation of complex circuits using DTMOS transistors would lead to a degradation of the stand-by consumption. (authors)

Current constrained voltage scaled reconstruction (CCVSR) algorithm for MR-EIT and its performance with different probing current patterns

International Nuclear Information System (INIS)

Birguel, Oezlem; Eyueboglu, B Murat; Ider, Y Ziya

2003-01-01

Conventional injected-current electrical impedance tomography (EIT) and magnetic resonance imaging (MRI) techniques can be combined to reconstruct high resolution true conductivity images. The magnetic flux density distribution generated by the internal current density distribution is extracted from MR phase images. This information is used to form a fine detailed conductivity image using an Ohm's law based update equation. The reconstructed conductivity image is assumed to differ from the true image by a scale factor. EIT surface potential measurements are then used to scale the reconstructed image in order to find the true conductivity values. This process is iterated until a stopping criterion is met. Several simulations are carried out for opposite and cosine current injection patterns to select the best current injection pattern for a 2D thorax model. The contrast resolution and accuracy of the proposed algorithm are also studied. In all simulation studies, realistic noise models for voltage and magnetic flux density measurements are used. It is shown that, in contrast to the conventional EIT techniques, the proposed method has the capability of reconstructing conductivity images with uniform and high spatial resolution. The spatial resolution is limited by the larger element size of the finite element mesh and twice the magnetic resonance image pixel size

Enhanced current and voltage regulators for stand-alone applications

DEFF Research Database (Denmark)

Federico, de Bosio; Pastorelli, Michele; Antonio DeSouza Ribeiro, Luiz

2016-01-01

State feedback decoupling permits to achieve a better dynamic response for Voltage Source in stand-alone applications. The design of current and voltage regulators is performed in the discrete-time domain since it provides better accuracy and allows direct pole placement. As the attainable...... bandwidth of the current loop is mainly limited by computational and PWM delays, a lead compensator structure is proposed to overcome this limitation. The design of the voltage regulator is based on the Nyquist criterion, verifying to guarantee a high sensitivity peak. Discrete-time domain implementation...

Magnetic field dependence of the critical current density in YBa2Cu3Ox ceramics

International Nuclear Information System (INIS)

Zhukov, A.A.; Moshchalkov, V.V.; Komarkov, D.A.; Shabatin, V.P.; Gordeev, S.N.; Shelomov, D.V.

1989-01-01

Three magnetic field ranges corresponding to different critical current density j c behavior have been found out. They correlate with grain magnetization changes. The inverse critical current density is shown to depend linearly on the sample cross-section due to the magnetic field induced by the flowing current

Study of Streamers in Gradient Density Air: Table Top Modeling of Red Sprites

Science.gov (United States)

Opaits, D. F.; Shneider, M. N.; Howard, P. J.; Miles, R. B.; Milikh, G. M.

2009-12-01

Sprites and blue jets develop in the upper atmosphere where ambient density changes drastically over their lengths. Theoretical analysis of Red Sprites [1] and Blue Jets [2,3] are based on the streamer tip parameters’ functional dependence on a local gas density N(h). At the moment there is a lack of experimental data for streamer propagation in a non-uniform ambient gas density. Small scale experiments in controllable conditions are important for validation of analytical models as well as numerical simulations, which can be used for the investigation of real scale plasma phenomena that develop above thunderclouds. Controllable, non-uniform gas density can be achieved in laboratory conditions in super sonic nozzles, fast centrifuges or gas filled tubes with a non-uniform temperature distribution along the axis. The latter approach was used in the present work. A quartz tube, approximately one foot in length, was filled with air at different pressures. A density gradient was created by heating up the top of the tube while keeping the bottom at room temperature. The discharge was initiated by applying a high voltage pulse to a pin electrode at the top of the tube while a flat electrode was grounded at the bottom. Similar to Red Sprites, the streamer propagates downwards into a region of higher density and stops before reaching the lower electrode while the top electrode remains under high potential. This work will present results of streamer propagation at different pressures and voltages. Measurements of current-voltage characteristics as well as integral images will be presented. 1. Y. P.Raizer, G. M. Milikh, M. N. Shneider, and S. V. Novakovski (1998), J. Phys. D: Appl. Phys. 31, 3255-3264. 2. Y. P.Raizer, G. M. Milikh, and M. N. Shneider (2006), Geophys. Res. Lett., 33, L23801 3. Y .P.Raizer, G. M. Milikh, and M. N. Shneider (2007), J. Atmos. & Solat-Terr. Phys, 69, 925-938

Low start-up voltage dc–dc converter with negative voltage control for thermoelectric energy harvesting

Directory of Open Access Journals (Sweden)

Pui-Sun Lei

2015-01-01

Full Text Available This Letter presents a low start-up voltage dc–dc converter for low-power thermoelectric systems which uses a native n-type MOS transistor as the start-up switch. The start-up voltage of the proposed converter is 300 mV and the converter does not need batteries to start up. The negative voltage control is proposed to reduce the leakage current caused by native n-type transistor and increase the efficiency. The proposed converter was designed using standard 0.18 µm CMOS process with chip size of 0.388 mm^2. The peak efficiency is 63% at load current of 1.5 mA. The proposed converter provides output voltage >1 V at maximum load current of 3.2 mA.

Li3V2(PO4)3/LiFePO4 composite hollow microspheres for wide voltage lithium ion batteries

International Nuclear Information System (INIS)

He, Wen; Wei, Chuanliang; Zhang, Xudong; Wang, Yaoyao; Liu, Qinze; Shen, Jianxing; Wang, Lianzhou; Yue, Yuanzheng

2016-01-01

Highlights: • Using yeast cells to control the in-situ growth of crystal particle. • Heterogeneous isomorphism nanocomposite hollow microspheres are synthesized. • The cathode exhibits a higher discharge capacity and energy density. - Abstract: Li 3 V 2 (PO 4 ) 3 (LVP)/LiFePO 4 (LVP) composite hollow microspheres (LVP/LFP-CHMs) for lithium-ion batteries have been synthesized by a combination method, using yeast cells as both structure templates and biocarbon source. The stable heterogeneous isomorphism solid solution with superlattice structure is formed in the joint of LVP and LFP particles. A detailed analysis of the formation mechanism of solid solution with superlattice structure and the influences of different Fe:V mole ratios on the structure and electrochemical properties of composites are presented. When the LVP/LFP-CHMs with a Fe:V mole ratio of 1:3 were used as cathode material in coin cells with metallic Li as anode, the cell exhibits a discharge capacity of 221.5 mAh g −1 for 5 cycles and discharge specific energy of 682 Wh kg −1 at 0.1C in a wide voltage range (1.5–4.3 V). Its capacity is far higher than the capacity of unsubstituted LFP and LVP in the same wide voltage range. The energy density of this cell is about 4 times higher than that of modern commercial lithium-ion batteries (157 Wh kg −1 ). The wide voltage range not only increases the discharge capacity and energy density of cathode materials, but also could expand the range of its applications in electronic equipment.

Influence of electron spectrum dielectrizations on critical current of the Josephson medium BaPb1-xBixO3

International Nuclear Information System (INIS)

Vojtenko, A.I.; Gabovich, A.M.; Moiseev, D.P.; Postnikov, V.M.; Shpigel', A.S.

1990-01-01

Temperature dependences of the critical current I c across the symmetrical tunnel Josephson junctions between superconductors with partially-gapped electron spectrum were calculated. Densities J c of the critical current for the bulk Josephson-type samples and current-voltage characteristics of the tunnel-type were measured

Current-voltage characterization of individual as-grown nanowires using a scanning tunneling microscope.

Science.gov (United States)

Timm, Rainer; Persson, Olof; Engberg, David L J; Fian, Alexander; Webb, James L; Wallentin, Jesper; Jönsson, Andreas; Borgström, Magnus T; Samuelson, Lars; Mikkelsen, Anders

2013-11-13

Utilizing semiconductor nanowires for (opto)electronics requires exact knowledge of their current-voltage properties. We report accurate on-top imaging and I-V characterization of individual as-grown nanowires, using a subnanometer resolution scanning tunneling microscope with no need for additional microscopy tools, thus allowing versatile application. We form Ohmic contacts to InP and InAs nanowires without any sample processing, followed by quantitative measurements of diameter dependent I-V properties with a very small spread in measured values compared to standard techniques.

NO involvement in the inhibition of ghrelin on voltage-dependent potassium currents in rat hippocampal cells.

Science.gov (United States)

Lu, Yong; Dang, Shaokang; Wang, Xu; Zhang, Junli; Zhang, Lin; Su, Qian; Zhang, Huiping; Lin, Tianwei; Zhang, Xiaoxiao; Zhang, Yurong; Sun, Hongli; Zhu, Zhongliang; Li, Hui

2018-01-01

Ghrelin is a peptide hormone that plays an important role in promoting appetite, regulating distribution and rate of use of energy, cognition, and mood disorders, but the relevant neural mechanisms of these function are still not clear. In this study, we examined the effect of ghrelin on voltage-dependent potassium (K + ) currents in hippocampal cells of 1-3 days SD rats by whole-cell patch-clamp technique, and discussed whether NO was involved in this process. The results showed that ghrelin significantly inhibited the voltage-dependent K + currents in hippocampal cells, and the inhibitory effect was more significant when l-arginine was co-administered. In contrast, N-nitro- l-arginine methyl ester increased the ghrelin inhibited K + currents and attenuated the inhibitory effect of ghrelin. While d-arginine (D-AA) showed no significant impact on the ghrelin-induced decrease in K + current. These results show that ghrelin may play a physiological role by inhibiting hippocampal voltage dependent K + currents, and the NO pathway may be involved in this process. Copyright © 2017 Elsevier B.V. All rights reserved.

Local drift parameter, j/n/sub e/ and resistivity anomaly measurements in CTX spheromaks

International Nuclear Information System (INIS)

Hoida, H.W.; Barnes, C.W.; Henins, I.; Jarboe, T.R.; Marklin, G.; Buchenauer, C.J.; Knox, S.O.

1985-01-01

In a spheromak, the magnetic fields confining the plasma are generated primarily by internal currents rather than external coils. In order to provide information on the possible existence of current-driven microinstabilities, localized measurements of the ratio of the drift velocity of the electrons generating the internal current to their thermal velocity, V/sub d//V/sub th/ proportional to j/n/sub e/√T/sub e/ (known as the drift or streaming parameter), and j/n/sub e/ (proportional to V/sub d/) are needed. These microinstabilities are in some theories associated with an increase in the resistivity anomaly factor (eta/eta/sub Spitzer/). We present results on local measurements (at the magnetic axis) of the values of V/sub d//V/sub th/ and eta/eta/sub Spitzer/ by combining data from the spatially-resolved diagnostics employed on the CTX spheromak experiment, coupled with current density profile information from equilibrium measurements. The values of V/sub d//V/sub th/ and j/n/sub e/ appear to be correlated with local variations in eta/eta/sub Spitzer/, and can be changed by varying the plasma density. Data sets are presented for three values of n/sub e/

A New Asymmetrical Current-fed Converter with Voltage Lifting

Directory of Open Access Journals (Sweden)

DELSHAD, M.

2011-05-01

Full Text Available This paper presents a new zero voltage switching current-fed DC-DC converter with high voltage gain. In this converter all switches (main and auxiliary turn on under zero voltage switching and turn off under almost zero voltage switching due to snubber capacitor. Furthermore, the voltage spike across the main switch due to leakage inductance of forward transformer is absorbed. The flyback transformer which is connected to the output in series causes to high voltage gain and less voltage stress on the power devices. Considering high efficiency and voltage gain of this converter, it is suitable for green generated systems such as fuel cells or photovoltaic systems. The presented experimental results verify the integrity of the proposed converter.

Voltage Dependence of a Neuromodulator-Activated Ionic Current123

Science.gov (United States)

2016-01-01

Abstract The neuromodulatory inward current (IMI) generated by crab Cancer borealis stomatogastric ganglion neurons is an inward current whose voltage dependence has been shown to be crucial in the activation of oscillatory activity of the pyloric network of this system. It has been previously shown that IMI loses its voltage dependence in conditions of low extracellular calcium, but that this effect appears to be regulated by intracellular calmodulin. Voltage dependence is only rarely regulated by intracellular signaling mechanisms. Here we address the hypothesis that the voltage dependence of IMI is mediated by intracellular signaling pathways activated by extracellular calcium. We demonstrate that calmodulin inhibitors and a ryanodine antagonist can reduce IMI voltage dependence in normal Ca2+, but that, in conditions of low Ca2+, calmodulin activators do not restore IMI voltage dependence. Further, we show evidence that CaMKII alters IMI voltage dependence. These results suggest that calmodulin is necessary but not sufficient for IMI voltage dependence. We therefore hypothesize that the Ca2+/calmodulin requirement for IMI voltage dependence is due to an active sensing of extracellular calcium by a GPCR family calcium-sensing receptor (CaSR) and that the reduction in IMI voltage dependence by a calmodulin inhibitor is due to CaSR endocytosis. Supporting this, preincubation with an endocytosis inhibitor prevented W7 (N-(6-aminohexyl)-5-chloro-1-naphthalenesulfonamide hydrochloride)-induced loss of IMI voltage dependence, and a CaSR antagonist reduced IMI voltage dependence. Additionally, myosin light chain kinase, which is known to act downstream of the CaSR, seems to play a role in regulating IMI voltage dependence. Finally, a Gβγ-subunit inhibitor also affects IMI voltage dependence, in support of the hypothesis that this process is regulated by a G-protein-coupled CaSR. PMID:27257619

Unusual Voltage-Gated Sodium Currents as Targets for Pain.

Science.gov (United States)

Barbosa, C; Cummins, T R

2016-01-01

Pain is a serious health problem that impacts the lives of many individuals. Hyperexcitability of peripheral sensory neurons contributes to both acute and chronic pain syndromes. Because voltage-gated sodium currents are crucial to the transmission of electrical signals in peripheral sensory neurons, the channels that underlie these currents are attractive targets for pain therapeutics. Sodium currents and channels in peripheral sensory neurons are complex. Multiple-channel isoforms contribute to the macroscopic currents in nociceptive sensory neurons. These different isoforms exhibit substantial variations in their kinetics and pharmacology. Furthermore, sodium current complexity is enhanced by an array of interacting proteins that can substantially modify the properties of voltage-gated sodium channels. Resurgent sodium currents, atypical currents that can enhance recovery from inactivation and neuronal firing, are increasingly being recognized as playing potentially important roles in sensory neuron hyperexcitability and pain sensations. Here we discuss unusual sodium channels and currents that have been identified in nociceptive sensory neurons, describe what is known about the molecular determinants of the complex sodium currents in these neurons. Finally, we provide an overview of therapeutic strategies to target voltage-gated sodium currents in nociceptive neurons. Copyright © 2016 Elsevier Inc. All rights reserved.

Comparison of experimental and theoretical integral cross sections for D+H2(v=1, j=1)→HD(v'=1, j')+H

International Nuclear Information System (INIS)

Kliner, D.A.V.; Adelman, D.E.; Zare, R.N.

1991-01-01

We have measured the nascent HD(v'=1, j') product rotational distribution from the reaction D+H 2 (v, j) in which the H 2 reagent was either thermal (v=0, j) or prepared in the level (v=1, j=1) by stimulated Raman pumping. Translationally hot D atoms were obtained by uv laser photolysis of DBr or DI. Photolysis of DBr generated D atoms with center-of-mass collision energies (E rel ) of 1.04 and 0.82 eV, which corresponded to the production of ground state Br and spin--orbit-excited Br*, respectively. The E rel values for DI photolysis were 1.38 and 0.92 eV. Quantum-state-specific detection of HD was accomplished via (2+1) resonance-enhanced multiphoton ionization and time-of-flight mass spectrometry. Vibrational excitation of the H 2 reagent results in substantial rotational excitation of the HD(v'=1) product and increases the reaction rate into v'=1 by about a factor of 4. Although the quantum-mechanical calculation of Blais et al. [Chem. Phys. Lett. 166, 11 (1990)] for the D+H 2 (v=1, j=1)→HD(v'=1, j')+H product rotational distribution at E rel =1.02 eV is in qualitative agreement with experiment, it does not quantitatively agree with the measured distribution. Specifically, the calculated distribution is too hot by 2--3 rotational quanta, and the predicted enhancement in the v'=1 rate with reagent vibrational excitation is too large by 67%±9

Current-voltage characteristics of the semiconductor nanowires under the metal-semiconductor-metal structure

Science.gov (United States)

Wen, Jing; Zhang, Xitian; Gao, Hong; Wang, Mingjiao

2013-12-01

We present a method to calculate the I-V characteristics of semiconductor nanowires under the metal-semiconductor-metal (MSM) structure. The carrier concentration as an important parameter is introduced into the expression of the current. The subband structure of the nanowire has been considered for associating it with the position of the Fermi level and circumventing the uncertainties of the contact areas in the contacts. The tunneling and thermionic emission currents in the two Schottky barriers at the two metal-semiconductor contacts are discussed. We find that the two barriers have different influences on the I-V characteristics of the MSM structure, one of which under the forward bias plays the role of threshold voltage if its barrier height is large and the applied voltage is small, and the other under the reverse bias controls the shapes of I-V curves. Our calculations show that the shapes of the I-V curves for the MSM structure are mainly determined by the barrier heights of the contacts and the carrier concentration. The nearly identical I-V characteristics can be obtained by using different values of the barrier heights and carrier concentration, which means that the contact type conversion can be ascribed not only to the changes of the barrier heights but also that of the carrier concentration. We also discuss the mechanisms of the ohmic-Schottky conversions and clarify the ambiguity in the literature. The possibility about the variation of the carrier concentration under the applied fields has been confirmed by experimental results.

A Hybrid, Current-Source/Voltage-Source Power Inverter Circuit

DEFF Research Database (Denmark)

Trzynadlowski, Andrzej M.; Patriciu, Niculina; Blaabjerg, Frede

2001-01-01

A combination of a large current-source inverter and a small voltage-source inverter circuits is analyzed. The resultant hybrid inverter inherits certain operating advantages from both the constituent converters. In comparison with the popular voltage-source inverter, these advantages include...... reduced switching losses, improved quality of output current waveforms, and faster dynamic response to current control commands. Description of operating principles and characteristics of the hybrid inverter is illustrated with results of experimental investigation of a laboratory model....

Mitigation of Grid Current Distortion for LCL-Filtered Voltage Source Inverter with Inverter Current Feedback Control

DEFF Research Database (Denmark)

Xin, Zhen; Mattavelli, Paolo; Yao, WenLi

2018-01-01

LCL filters feature low inductance; thus, the injected grid current from an LCL-filtered Voltage Source Inverter (VSI) can be easily distorted by grid voltage harmonics. This problem is especially tough for the control system with Inverter-side Current Feedback (ICF), since the grid current...... harmonics can freely flow into the filter capacitor. In this case, because of the loss of harmonic information, traditional harmonic controllers fail to mitigate the grid current distortion. Although this problem may be avoided using the grid voltage feedforward scheme, the required differentiators may...

Study of 750 J plasma coaxial accelerator

International Nuclear Information System (INIS)

Mehanna, E.A.; Hassouba, M.A; Abd al-halim, M.A.

2009-01-01

A 750 J plasma coaxial accelerator is used to produce plasma using air at 0.2 torr pressure and 8 kv charging voltage. The discharge current and voltage traces showed that the total circuit inductance was about 1750 μH. The experimental results showed that the plasma sheath reached the muzzle after 6 μs with velocity equal to 4 cm/μs, after then it decreased, while the simulation model showed that the plasma sheath reaches the muzzle with velocity of 3 cm/μs and after one microsecond it increases to reach about 4 cm/μs after 12 μs then it decreased. The plasma temperature measurements showed that the plasma sheath reached the muzzle with temperature of about 9 eV and increase to reach about 12 eV after 8.5 μs then after it decrease. The simulation model showed that the plasma temperature at the muzzle is about 10.5 eV and continue to increase to reach 17.5 eV after 12 μs then it decrease

Commissioning experiences on high voltage generator of 750 KeV DC accelerator at RRCAT, Indore

International Nuclear Information System (INIS)

Banwari, R.; Kasliwal, A.; Pandit, T.G.

2009-01-01

Design approach of high voltage generator for 750 keV DC accelerator, developed at RRCAT Indore, inculcates a unique feature of high frequency operation of symmetrical Cockcroft-Walton voltage generator. Apart from design simplicity and feasibility of modular construction, the high frequency use of symmetrical Cockcroft-Walton circuit gives added advantages of less ripple, better regulation, faster response and low stored energy in the system. Additionally the scheme allows us the use of low voltage, light weight components thus improving the overall economy of the system. The accelerator has been commissioned and made operational at its rated energy of 750 keV in the recent past. With brief introduction on design aspects of high voltage generator and filament power supply of this accelerator, the paper presented here describes the developmental steps of various components with focus on challenges encountered and solutions implemented. Development of high frequency inverter, high voltage ferrite core transformer, compensating inductors, interface bushings, voltage multiplier stack, and filament transformer along with floating power supply for electron emitter of the accelerator has been dealt in detail. The failures encountered during commissioning stages of the accelerator have been reported with measures taken for improvement of the specific components. Intricacies of the reflected capacitance of the multiplier stack and arc-current ground return are also described with their effects on system operation and reliability. (author)

Dependence of critical current density on crystalline direction in thin YBCO films

DEFF Research Database (Denmark)

Paturi, P.; Peurla, M.; Raittila, J.

2005-01-01

The dependence of critical current density (J(c)) on the angle between the current direction and the (100) direction in the ab-plane of thin YBCO films deposited on (001)-SrTiO3 from natiocrystalline and microcrystalline targets is studied using magneto-optical microscopy. In the films made from...... the nanocrystalline target it is found that J(c) does not depend on the angle whereas J(c) decreases with increasing angle in the films made from the microcrystalline target. The films were characterized by detailed X-ray diffraction measurements. The findings are explained in terms of a network of planar defects...

Analytical drift-current threshold voltage model of long-channel double-gate MOSFETs

International Nuclear Information System (INIS)

Shih, Chun-Hsing; Wang, Jhong-Sheng

2009-01-01

This paper presents a new, physical threshold voltage model to solve the ambiguity in determining the threshold voltage of double-gate (DG) MOSFETs. To avoid the difficulties of the conventional 2ψ B model in nearly undoped DG MOSFETs, this study proposes to define the on–off switching based on the actual roles of the drift and diffusion components in the total drain current. The drift current strongly enhances beyond the threshold voltage, while the diffusion current plays a major role in the subthreshold. The threshold voltage is defined as the drift component that exceeds the diffusion counterpart. From the solutions of Poisson's equation, the drift and diffusion currents of DG MOSFETs are separately formulated to derive the analytical expressions of the threshold voltage and associated threshold current. This model provides a comprehensive description of the switching behavior of DG MOSFET devices, and offers a physical onset threshold current to determine the threshold voltage in practical extraction

Identification of ALV-J associated acutely transforming virus Fu-J carrying complete v-fps oncogene.

Science.gov (United States)

Wang, Yixin; Li, Jianliang; Li, Yang; Fang, Lichun; Sun, Xiaolong; Chang, Shuang; Zhao, Peng; Cui, Zhizhong

2016-06-01

Transduction of oncogenes by ALVs and generation of acute transforming viruses is common in natural viral infections. In order to understand the molecular basis for the rapid oncogenicity of Fu-J, an acutely transforming avian leukosis virus isolated from fibrosarcomas in crossbreed broilers infected with subgroup J avian leukosis virus (ALV-J) in China, complete genomic structure of Fu-J virus was determined by PCR amplification and compared with those of Fu-J1, Fu-J2, Fu-J3, Fu-J4, and Fu-J5 reported previously. The results showed that the genome of Fu-J was defective, with parts of gag gene replaced by the complete v-fps oncogene and encoded a 137 kDa Gag-fps fusion protein. Sequence analysis revealed that Fu-J and Fu-J1 to Fu-J5 were related quasi-species variants carrying different lengths of v-fps oncogenes generated from recombination between helper virus and c-fps gene. Comparison of virus carrying v-fps oncogene also gave us a glimpse of the molecular characterization and evolution process of the acutely transforming ALV.

Current density and catalyst-coated membrane resistance distribution of hydro-formed metallic bipolar plate fuel cell short stack with 250 cm2 active area

Science.gov (United States)

Haase, S.; Moser, M.; Hirschfeld, J. A.; Jozwiak, K.

2016-01-01

An automotive fuel cell with an active area of 250 cm2 is investigated in a 4-cell short stack with a current and temperature distribution device next to the bipolar plate with 560 current and 140 temperature segments. The electrical conductivities of the bipolar plate and gas diffusion layer assembly are determined ex-situ with this current scan shunt module. The applied fuel cell consists of bipolar plates constructed of 75-μm-thick, welded stainless-steel foils and a graphitic coating. The electrical conductivities of the bipolar plate and gas diffusion layer assembly are determined ex-situ with this module with a 6% deviation in in-plane conductivity. The current density distribution is evaluated up to 2.4 A cm-2. The entire cell's investigated volumetric power density is 4.7 kW l-1, and its gravimetric power density is 4.3 kW kg-1 at an average cell voltage of 0.5 V. The current density distribution is determined without influencing the operating cell. In addition, the current density distribution in the catalyst-coated membrane and its effective resistivity distribution with a finite volume discretisation of Ohm's law are evaluated. The deviation between the current density distributions in the catalyst-coated membrane and the bipolar plate is determined.

The dynamic current-voltage characteristic as a powerful tool to analyze fast phenomena in plasma

International Nuclear Information System (INIS)

Ivan, L. M.; Mihai-Plugaru, M.; Amarandei, G.; Aflori, M.; Dimitriu, D. G.

2006-01-01

The static current-voltage characteristic of an electrode immersed in plasma is obtained by slowly increasing and subsequently decreasing the potential on the electrode with respect to the plasma potential or the ground. This characteristic can give us important information about the phenomena that take place in front of the electrode. Current jumps can be evidenced which were often associated with an hysteresis effect, regions with S-type or N-type negative differential resistance, etc. The method is always used when we investigate the appearance of complex space charge configurations (CSCC) in front of an electrode immersed in plasma. However, to investigate the dynamics of such structures or other fast phenomena (like instabilities) which take place in plasma devices with frequencies of tenth, hundred kHz or more, complex investigation techniques must be used. One of the most efficient methods to investigate fast phenomena in plasma devices is the dynamic current-voltage characteristic. This is obtained by recording the time series of the current collected by the electrode when the voltage applied on it is very fast modified (most likely increased) by using a signal generator. In this way, very fast oscillations of the current can be recorded and new phenomena can be evidenced. We used this technique to study the phenomena which take place at the onset of electrostatic instabilities in Q-machine plasma, namely the potential relaxation instability (PRI) and the electrostatic ion-cyclotron instability (EICI). The obtained experimental results prove that the negative differential resistance region in the static current-voltage characteristic is the result of a nonlinear dynamics of a CSCC in form of a double layer (DL) which takes place just before the onset of the instabilities. In the case of the PRI we emphasized current jumps related with the DL appearance, which are not present in the static current-voltage characteristic at high plasma density. (authors)

Classification of methods for measuring current-voltage characteristics of semiconductor devices

Directory of Open Access Journals (Sweden)

Iermolenko Ia. O.

2014-06-01

Full Text Available It is shown that computer systems for measuring current-voltage characteristics are very important for semiconductor devices production. The main criteria of efficiency of such systems are defined. It is shown that efficiency of such systems significantly depends on the methods for measuring current-voltage characteristics of semiconductor devices. The aim of this work is to analyze existing methods for measuring current-voltage characteristics of semiconductor devices and to create the classification of these methods in order to specify the most effective solutions in terms of defined criteria. To achieve this aim, the most common classifications of methods for measuring current-voltage characteristics of semiconductor devices and their main disadvantages are considered. Automated and manual, continuous, pulse, mixed, isothermal and isodynamic methods for measuring current-voltage characteristics are analyzed. As a result of the analysis and generalization of existing methods the next classification criteria are defined: the level of automation, the form of measurement signals, the condition of semiconductor device during the measurements, and the use of mathematical processing of the measurement results. With the use of these criteria the classification scheme of methods for measuring current-voltage characteristics of semiconductor devices is composed and the most effective methods are specified.

Low-voltage organic field-effect transistors based on novel high-κ organometallic lanthanide complex for gate insulating materials

Energy Technology Data Exchange (ETDEWEB)

Liu, Qi; Li, Yi; Zhang, Yang; Song, You, E-mail: wangxzh@nju.edu.cn, E-mail: yli@nju.edu.cn, E-mail: yousong@nju.edu.cn; Wang, Xizhang, E-mail: wangxzh@nju.edu.cn, E-mail: yli@nju.edu.cn, E-mail: yousong@nju.edu.cn; Hu, Zheng [Key Laboratory of Mesoscopic Chemistry of MOE, Jiangsu Provincial Lab for Nanotechnology, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing 210093, China. High-Tech Research Institute of Nanjing University (Suzhou), Suzhou 215123 (China); Sun, Huabin; Li, Yun, E-mail: wangxzh@nju.edu.cn, E-mail: yli@nju.edu.cn, E-mail: yousong@nju.edu.cn; Shi, Yi [School of Electronic Science and Engineering and Jiangsu Provincial Key Laboratory of Photonic and Electronic Materials, Nanjing University, Nanjing 210093 (China)

2014-08-15

A novel high-κ organometallic lanthanide complex, Eu(tta){sub 3}L (tta=2-thenoyltrifluoroacetonate, L = 4,5-pinene bipyridine), is used as gate insulating material to fabricate low-voltage pentacene field-effect transistors (FETs). The optimized gate insulator exhibits the excellent properties such as low leakage current density, low surface roughness, and high dielectric constant. When operated under a low voltage of −5 V, the pentacene FET devices show the attractive electrical performance, e.g. carrier mobility (μ{sub FET}) of 0.17 cm{sup 2} V{sup −1} s{sup −1}, threshold voltage (V{sub th}) of −0.9 V, on/off current ratio of 5 × 10{sup 3}, and subthreshold slope (SS) of 1.0 V dec{sup −1}, which is much better than that of devices obtained on conventional 300 nm SiO{sub 2} substrate (0.13 cm{sup 2} V{sup −1} s{sup −1}, −7.3 V and 3.1 V dec{sup −1} for μ{sub FET}, V{sub th} and SS value when operated at −30 V). These results indicate that this kind of high-κ organometallic lanthanide complex becomes a promising candidate as gate insulator for low-voltage organic FETs.

Spatial distribution of superconducting and charge-density-wave order parameters in cuprates and its influence on the quasiparticle tunnel current (Review Article)

International Nuclear Information System (INIS)

Cabovich, Alexander M.; Voitenko, Alexander I.

2016-01-01

The state of the art concerning tunnel measurements of energy gaps in cuprate oxides has been analyzed. A detailed review of the relevant literature is made, and original results calculated for the quasiparticle tunnel current J(V) between a metallic tip and a disordered d-wave superconductor partially gapped by charge density waves (CDWs) are reported, because it is this model of high-temperature superconductors that becomes popular owing to recent experiments in which CDWs were observed directly. The current was calculated suggesting the scatter of both the superconducting and CDW order parameters due to the samples intrinsic inhomogeneity. It was shown that peculiarities in the current-voltage characteristics inherent to the case of homogeneous super-conducting material are severely smeared, and the CDW-related features transform into experimentally observed peak-dip-hump structures. Theoretical results were used to fit data measured for YBa_2Cu_3O_7_-_d_e_l_t_a and Bi_2Sr_2CaCu_2O_8_+_d_e_l_t_a. The fitting demonstrated a good qualitative agreement between the experiment and model calculations. The analysis of the energy gaps in high-Tc superconductors is important both per se and as a tool to uncover the nature of superconductivity in cuprates not elucidated so far despite of much theoretical effort and experimental progress.

Power-MOSFET Voltage Regulator

Science.gov (United States)

Miller, W. N.; Gray, O. E.

1982-01-01

Ninety-six parallel MOSFET devices with two-stage feedback circuit form a high-current dc voltage regulator that also acts as fully-on solid-state switch when fuel-cell out-put falls below regulated voltage. Ripple voltage is less than 20 mV, transient recovery time is less than 50 ms. Parallel MOSFET's act as high-current dc regulator and switch. Regulator can be used wherever large direct currents must be controlled. Can be applied to inverters, industrial furnaces photovoltaic solar generators, dc motors, and electric autos.

Fault Ride-through Capability Enhancement of Voltage Source Converter-High Voltage Direct Current Systems with Bridge Type Fault Current Limiters

Directory of Open Access Journals (Sweden)

Md Shafiul Alam

2017-11-01

Full Text Available This paper proposes the use of bridge type fault current limiters (BFCLs as a potential solution to reduce the impact of fault disturbance on voltage source converter-based high voltage DC (VSC-HVDC systems. Since VSC-HVDC systems are vulnerable to faults, it is essential to enhance the fault ride-through (FRT capability with auxiliary control devices like BFCLs. BFCL controllers have been developed to limit the fault current during the inception of system disturbances. Real and reactive power controllers for the VSC-HVDC have been developed based on current control mode. DC link voltage control has been achieved by a feedback mechanism such that net power exchange with DC link capacitor is zero. A grid-connected VSC-HVDC system and a wind farm integrated VSC-HVDC system along with the proposed BFCL and associated controllers have been implemented in a real time digital simulator (RTDS. Symmetrical three phase as well as different types of unsymmetrical faults have been applied in the systems in order to show the effectiveness of the proposed BFCL solution. DC link voltage fluctuation, machine speed and active power oscillation have been greatly suppressed with the proposed BFCL. Another significant feature of this work is that the performance of the proposed BFCL in VSC-HVDC systems is compared to that of series dynamic braking resistor (SDBR. Comparative results show that the proposed BFCL is superior over SDBR in limiting fault current as well as improving system fault ride through (FRT capability.

Numerical study of the influence of applied voltage on the current balance factor of single layer organic light-emitting diodes

International Nuclear Information System (INIS)

Lu, Fei-ping; Liu, Xiao-bin; Xing, Yong-zhong

2014-01-01

Current balance factor (CBF) value, the ratio of the recombination current density and the total current density of a device, has an important function in fluorescence-based organic light-emitting diodes (OLEDs), as well as in the performance of the organic electrophosphorescent devices. This paper investigates the influence of the applied voltage of a device on the CBF value of single layer OLED based on the numerical model of a bipolar single layer OLED with organic layer trap free and without doping. Results show that the largest CBF value can be achieved when the electron injection barrier (ϕ n ) is equal to the hole injection barrier (ϕ p ) in the lower voltage region at any instance. The largest CBF in the higher voltage region can be achieved in the case of ϕ n  > ϕ p under the condition of electron mobility (μ 0n ) > hole mobility (μ 0p ), whereas the result for the case of μ 0n   0p , is opposite. The largest CBF when μ 0n  = μ 0p can be achieved in the case of ϕ n  = ϕ p in the entire region of the applied voltage. In addition, the CBF value of the device increases with increasing applied voltage. The results obtained in this paper can present an in-depth understanding of the OLED working mechanism and help in the future fabrication of high efficiency OLEDs

Oscillation of Critical Current by Gate Voltage in Cooper Pair Transistor

International Nuclear Information System (INIS)

Kim, N.; Cheong, Y.; Song, W.

2010-01-01

We measured the critical current of a Cooper pair transistor consisting of two Josephson junctions and a gate electrode. The Cooper pair transistors were fabricated by using electron-beam lithography and double-angle evaporation technique. The Gate voltage dependence of critical current was measured by observing voltage jumps at various gate voltages while sweeping bias current. The observed oscillation was 2e-periodic, which shows the Cooper pair transistor had low level of quasiparticle poisoning.

High Efficiency Single Output ZVS-ZCS Voltage Doubled Flyback Converter

Science.gov (United States)

Kaliyaperumal, Deepa; Saju, Hridya Merin; Kumar, M. Vijaya

2016-06-01

A switch operating at high switching frequency increases the switching losses of the converter resulting in lesser efficiency. Hence this paper proposes a new topology which has resonant switches [zero voltage switching (ZVS)] in the primary circuit to eliminate the above said disadvantages, and voltage doubler zero current switching (ZCS) circuit in the secondary to double the output voltage, and hence the output power, power density and efficiency. The design aspects of the proposed topology for a single output of 5 V at 50 kHz, its simulation and hardware results are discussed in detail. The analysis of the results obtained from a 2.5 W converter reveals the superiority of the proposed converter.

Low-voltage organic field-effect transistors based on novel high-κ organometallic lanthanide complex for gate insulating materials

Directory of Open Access Journals (Sweden)

Qi Liu

2014-08-01

Full Text Available A novel high-κ organometallic lanthanide complex, Eu(tta3L (tta=2-thenoyltrifluoroacetonate, L = 4,5-pinene bipyridine, is used as gate insulating material to fabricate low-voltage pentacene field-effect transistors (FETs. The optimized gate insulator exhibits the excellent properties such as low leakage current density, low surface roughness, and high dielectric constant. When operated under a low voltage of −5 V, the pentacene FET devices show the attractive electrical performance, e.g. carrier mobility (μFET of 0.17 cm2 V−1 s−1, threshold voltage (Vth of −0.9 V, on/off current ratio of 5 × 103, and subthreshold slope (SS of 1.0 V dec−1, which is much better than that of devices obtained on conventional 300 nm SiO2 substrate (0.13 cm2 V−1 s−1, −7.3 V and 3.1 V dec−1 for μFET, Vth and SS value when operated at −30 V. These results indicate that this kind of high-κ organometallic lanthanide complex becomes a promising candidate as gate insulator for low-voltage organic FETs.

High Voltage, Fast-Switching Module for Active Control of Magnetic Fields and Edge Plasma Currents

Science.gov (United States)

Ziemba, Timothy; Miller, Kenneth; Prager, James; Slobodov, Ilia

2016-10-01

Fast, reliable, real-time control of plasma is critical to the success of magnetic fusion science. High voltage and current supplies are needed to mitigate instabilities in all experiments as well as disruption events in large scale tokamaks for steady-state operation. Silicon carbide (SiC) MOSFETs offer many advantages over IGBTs including lower drive energy requirements, lower conduction and switching losses, and higher switching frequency capabilities; however, these devices are limited to 1.2-1.7 kV devices. As fusion enters the long-pulse and burning plasma eras, efficiency of power switching will be important. Eagle Harbor Technologies (EHT), Inc. developing a high voltage SiC MOSFET module that operates at 10 kV. This switch module utilizes EHT gate drive technology, which has demonstrated the ability to increase SiC MOSFET switching efficiency. The module will allow more rapid development of high voltage switching power supplies at lower cost necessary for the next generation of fast plasma feedback and control. EHT is partnering with the High Beta Tokamak group at Columbia to develop detailed high voltage module specifications, to ensure that the final product meets the needs of the fusion science community.

The effect of electrodeposition process parameters on the current density distribution in an electrochemical cell

Directory of Open Access Journals (Sweden)

R. M. STEVANOVIC

2001-02-01

Full Text Available Cell voltage – current density dependences for a model electrochemical cell of fixed geometry were calculated for different electrolyte conductivities, Tafel slopes and cathodic exchange current densities. The ratio between the current density at the part of the cathode nearest to the anode and the one furthest away were taken as a measure for the estimation of the current density distribution. The calculations reveal that increasing the conductivity of the electrolyte, as well as increasing the cathodic Tafel slope should both improve the current density distribution. Also, the distribution should be better under total activation control or total diffusion control rather than at mixed activation-diffusion-Ohmic control of the deposition process. On the contrary, changes in the exchange current density should not affect it. These results, being in agreement with common knowledge about the influence of different parameters on the current distribution in an electrochemical cell, demonstrate that a quick estimation of the current distribution can be performed by a simple comparison of the current density at the point of the cathode closest to anode with that at furthest point.

Conducted noise analysis and protection of 45 kJ/s, ±50 kV capacitor charging power supply when interfaced with repetitive Marx based pulse power system

Science.gov (United States)

Naresh, P.; Patel, Ankur; Sharma, Archana

2015-09-01

Pulse power systems with highly dynamic loads like klystron, backward wave oscillator (BWO), and magnetron generate highly dynamic noise. This noise leads to frequent failure of controlled switches in the inverter stage of charging power supply. Designing a reliable and compatible power supply for pulse power applications is always a tricky job when charging rate is in multiples of 10 kJ/s. A ±50 kV and 45 kJ/s capacitor charging power supply based on 4th order LCLC resonant topology has been developed for a 10 Hz repetitive Marx based system. Conditions for load independent constant current and zero current switching (ZCS) are derived mathematically. Noise generated at load end due to dynamic load is tackled effectively and reduction in magnitude noise voltage is achieved by providing shielding between primary and secondary of high voltage high frequency transformer and with LCLC low pass filter. Shielding scales down the ratio between coupling capacitance (Cc) and the collector-emitter capacitance of insulated gate bi-polar transistor switch, which in turn reduces the common mode noise voltage magnitude. The proposed 4th order LCLC resonant network acts as a low pass filter for differential mode noise in the reverse direction (from load to source). Power supply has been tested repeatedly with 5 Hz repetition rate with repetitive Marx based system connected with BWO load working fine without failure of single switch in the inverter stage.

Charge-pump voltage converter

Science.gov (United States)

Brainard, John P [Albuquerque, NM; Christenson, Todd R [Albuquerque, NM

2009-11-03

A charge-pump voltage converter for converting a low voltage provided by a low-voltage source to a higher voltage. Charge is inductively generated on a transfer rotor electrode during its transit past an inductor stator electrode and subsequently transferred by the rotating rotor to a collector stator electrode for storage or use. Repetition of the charge transfer process leads to a build-up of voltage on a charge-receiving device. Connection of multiple charge-pump voltage converters in series can generate higher voltages, and connection of multiple charge-pump voltage converters in parallel can generate higher currents. Microelectromechanical (MEMS) embodiments of this invention provide a small and compact high-voltage (several hundred V) voltage source starting with a few-V initial voltage source. The microscale size of many embodiments of this invention make it ideally suited for MEMS- and other micro-applications where integration of the voltage or charge source in a small package is highly desirable.

Transport critical current density in flux creep model

International Nuclear Information System (INIS)

Wang, J.; Taylor, K.N.R.; Russell, G.J.; Yue, Y.

1992-01-01

The magnetic flux creep model has been used to derive the temperature dependence of the critical current density in high temperature superconductors. The generally positive curvature of the J c -T diagram is predicted in terms of two interdependent dimensionless fitting parameters. In this paper, the results are compared with both SIS and SNS junction models of these granular materials, neither of which provides a satisfactory prediction of the experimental data. A hybrid model combining the flux creep and SNS mechanisms is shown to be able to account for the linear regions of the J c -T behavior which are observed in some materials

Enhanced vortex pinning and critical current density in proton-irradiated YBa2Cu3O7-δ thin films

International Nuclear Information System (INIS)

Venturini, E.L.; Siegal, M.P.; White, A.E.; Hou, S.Y.; Phillips, J.M.

1992-01-01

The appropriate fluence of 2.0 MeV H + ions has been shown previously to enhance the critical current density J c by a factor of two at a magnetic field of 0.9 tesla in 1000 Angstrom thick epitaxial films of YBa 2 Cu 3 O 7-δ grown by the ex situ BaF 2 process. The as-grown films exhibit single crystal-like behavior in both atomic ordering and J c versus temperature and magnetic field. TRIM simulations suggest that H + irradiation generates mainly point defects throughout the crystal structure. We show here that such defects produce both a large enhancement of J c for fields above 1 tesla and a significant increase in the apparent vortex pinning potential deduced from magnetization relaxation data

Rated-voltage enhancement by fast-breaking of the fault current for a resistive superconducting fault current limiter component

International Nuclear Information System (INIS)

Park, C.-R.; Kim, M.-J.; Yu, S.-D.; Yim, S.-W.; Kim, H.-R.; Hyun, O.-B.

2010-01-01

Performance of a resistive superconducting fault current limiter (SFCL) component is usually limited by temperature rise associated with energy input by fault current application during a fault. Therefore, it is expected that short application of the fault current may enhance the power ratings of the component. This can be accomplished by a combination of a HTS component and a mechanical switch. The fast switch (FS) developed recently enables the fault duration to be as short as 1/2 cycle after a fault. Various second-generation (2G) high temperature superconductors (HTS) and YBCO thin films have been tested. The relation between the rated voltage V and the fault duration time t was found to be V 2 ∼ t -1 . Based upon the relation, we predict that when the FS break the fault current within 1/2 cycle after a fault, the amount of HTS components required to build an SFCL can be reduced by as much as about 60%, of that when breaking the fault current at three cycles.

Highly efficient red electrophosphorescent devices at high current densities

International Nuclear Information System (INIS)

Wu Youzhi; Zhu Wenqing; Zheng Xinyou; Sun, Runguang; Jiang Xueyin; Zhang Zhilin; Xu Shaohong

2007-01-01

Efficiency decrease at high current densities in red electrophosphorescent devices is drastically restrained compared with that from conventional electrophosphorescent devices by using bis(2-methyl-8-quinolinato)4-phenylphenolate aluminum (BAlq) as a hole and exciton blocker. Ir complex, bis(2-(2'-benzo[4,5-α]thienyl) pyridinato-N,C 3' ) iridium (acetyl-acetonate) is used as an emitter, maximum external quantum efficiency (QE) of 7.0% and luminance of 10000cd/m 2 are obtained. The QE is still as high as 4.1% at higher current density J=100mA/cm 2 . CIE-1931 co-ordinates are 0.672, 0.321. A carrier trapping mechanism is revealed to dominate in the process of electroluminescence

Extraction of sub-gap density of states via capacitance-voltage measurement for the erasing process in a TFT charge-trapping memory

Science.gov (United States)

Chiang, Yen-Chang; Hsiao, Yang-Hsuan; Li, Jeng-Ting; Chen, Jen-Sue

2018-02-01

Charge-trapping memories (CTMs) based on zinc tin oxide (ZTO) semiconductor thin-film transistors (TFTs) can be programmed by a positive gate voltage and erased by a negative gate voltage in conjunction with light illumination. To understand the mechanism involved, the sub-gap density of states associated with ionized oxygen vacancies in the ZTO active layer is extracted from optical response capacitance-voltage (C-V) measurements. The corresponding energy states of ionized oxygen vacancies are observed below the conduction band minimum at approximately 0.5-1.0 eV. From a comparison of the fitted oxygen vacancy concentration in the CTM-TFT after the light-bias erasing operation, it is found that the pristine-erased device contains more oxygen vacancies than the program-erased device because the trapped electrons in the programmed device are pulled into the active layer and neutralized by the oxygen vacancies that are present there.

Effect of the density of the electronic states at the valence orbital of the bridge redox molecule on the dependence of the tunnel current on the overvoltage in the case of fully adiabatic electron transition

International Nuclear Information System (INIS)

Medvedev, Igor G.

2008-01-01

Effect of the density of the electronic states at the valence orbital of the bridge redox molecule on the dependence of the tunnel current on the overvoltage and on the width at half maximum of the current-overvoltage curve is studied. A number of the approximate expressions for the density of states, the tunnel current and the width are obtained in the fully adiabatic limit for different particular cases. It is shown that at small values of the coupling of the electronic levels of the electrodes with the valence orbital of the redox molecule and the small values of the bias voltage two regions of the reorganization Gibbs energy exist with different dependence of the width on the reorganization Gibbs energy. The results of calculations of the density of states, the tunnel current and the width are presented and used for the interpretation of the experimental data [N.G. Tao, Phys. Rev. Lett. 76 (1996) 4066, I. Visoly-Fisher, K. Daie, Y. Terazono, C. Herrero, F. Fungo, L. Otero, E. Durantini, J.J. Silber, L. Sereno, D. Gust, T.A. Moore, A.L. Moore, S.M. Lindsay, PNAS 103 (2006) 8686

HESS J1640-465 - an exceptionally luminous TeV γ-ray supernova remnant

Science.gov (United States)

Abramowski, A.; Aharonian, F.; Benkhali, F. Ait; Akhperjanian, A. G.; Angüner, E.; Anton, G.; Balenderan, S.; Balzer, A.; Barnacka, A.; Becherini, Y.; Becker Tjus, J.; Bernlöhr, K.; Birsin, E.; Bissaldi, E.; Biteau, J.; Böttcher, M.; Boisson, C.; Bolmont, J.; Bordas, P.; Brucker, J.; Brun, F.; Brun, P.; Bulik, T.; Carrigan, S.; Casanova, S.; Cerruti, M.; Chadwick, P. M.; Chalme-Calvet, R.; Chaves, R. C. G.; Cheesebrough, A.; Chrétien, M.; Colafrancesco, S.; Cologna, G.; Conrad, J.; Couturier, C.; Cui, Y.; Dalton, M.; Daniel, M. K.; Davids, I. D.; Degrange, B.; Deil, C.; deWilt, P.; Dickinson, H. J.; Djannati-Ataï, A.; Domainko, W.; Drury, L. O'C.; Dubus, G.; Dutson, K.; Dyks, J.; Dyrda, M.; Edwards, T.; Egberts, K.; Eger, P.; Espigat, P.; Farnier, C.; Fegan, S.; Feinstein, F.; Fernandes, M. V.; Fernandez, D.; Fiasson, A.; Fontaine, G.; Förster, A.; Füßling, M.; Gajdus, M.; Gallant, Y. A.; Garrigoux, T.; Giavitto, G.; Giebels, B.; Glicenstein, J. F.; Grondin, M.-H.; Grudzińska, M.; Häffner, S.; Hahn, J.; Harris, J.; Heinzelmann, G.; Henri, G.; Hermann, G.; Hervet, O.; Hillert, A.; Hinton, J. A.; Hofmann, W.; Hofverberg, P.; Holler, M.; Horns, D.; Jacholkowska, A.; Jahn, C.; Jamrozy, M.; Janiak, M.; Jankowsky, F.; Jung, I.; Kastendieck, M. A.; Katarzyński, K.; Katz, U.; Kaufmann, S.; Khélifi, B.; Kieffer, M.; Klepser, S.; Klochkov, D.; Kluźniak, W.; Kneiske, T.; Kolitzus, D.; Komin, Nu.; Kosack, K.; Krakau, S.; Krayzel, F.; Krüger, P. P.; Laffon, H.; Lamanna, G.; Lefaucheur, J.; Lemière, A.; Lemoine-Goumard, M.; Lenain, J.-P.; Lennarz, D.; Lohse, T.; Lopatin, A.; Lu, C.-C.; Marandon, V.; Marcowith, A.; Marx, R.; Maurin, G.; Maxted, N.; Mayer, M.; McComb, T. J. L.; Méhault, J.; Meintjes, P. J.; Menzler, U.; Meyer, M.; Moderski, R.; Mohamed, M.; Moulin, E.; Murach, T.; Naumann, C. L.; de Naurois, M.; Niemiec, J.; Nolan, S. J.; Oakes, L.; Ohm, S.; Wilhelmi, E. de Oña; Opitz, B.; Ostrowski, M.; Oya, I.; Panter, M.; Parsons, R. D.; Arribas, M. Paz; Pekeur, N. W.; Pelletier, G.; Perez, J.; Petrucci, P.-O.; Peyaud, B.; Pita, S.; Poon, H.; Pühlhofer, G.; Punch, M.; Quirrenbach, A.; Raab, S.; Raue, M.; Reimer, A.; Reimer, O.; Renaud, M.; Reyes, R. de los; Rieger, F.; Rob, L.; Romoli, C.; Rosier-Lees, S.; Rowell, G.; Rudak, B.; Rulten, C. B.; Sahakian, V.; Sanchez, D. A.; Santangelo, A.; Schlickeiser, R.; Schüssler, F.; Schulz, A.; Schwanke, U.; Schwarzburg, S.; Schwemmer, S.; Sol, H.; Spengler, G.; Spies, F.; Stawarz, Ł.; Steenkamp, R.; Stegmann, C.; Stinzing, F.; Stycz, K.; Sushch, I.; Szostek, A.; Tavernet, J.-P.; Tavernier, T.; Taylor, A. M.; Terrier, R.; Tluczykont, M.; Trichard, C.; Valerius, K.; van Eldik, C.; van Soelen, B.; Vasileiadis, G.; Venter, C.; Viana, A.; Vincent, P.; Vink, J.; Völk, H. J.; Volpe, F.; Vorster, M.; Vuillaume, T.; Wagner, S. J.; Wagner, P.; Ward, M.; Weidinger, M.; Weitzel, Q.; White, R.; Wierzcholska, A.; Willmann, P.; Wörnlein, A.; Wouters, D.; Zabalza, V.; Zacharias, M.; Zajczyk, A.; Zdziarski, A. A.; Zech, A.; Zechlin, H.-S.

2014-04-01

The results of follow-up observations of the TeV γ-ray source HESS J1640-465 from 2004 to 2011 with the High Energy Stereoscopic System (HESS) are reported in this work. The spectrum is well described by an exponential cut-off power law with photon index Γ = 2.11 ± 0.09stat ± 0.10sys, and a cut-off energy of E_c = 6.0^{+2.0}_{-1.2} TeV. The TeV emission is significantly extended and overlaps with the northwestern part of the shell of the SNR G338.3-0.0. The new HESS results, a re-analysis of archival XMM-Newton data and multiwavelength observations suggest that a significant part of the γ-ray emission from HESS J1640-465 originates in the supernova remnant shell. In a hadronic scenario, as suggested by the smooth connection of the GeV and TeV spectra, the product of total proton energy and mean target density could be as high as WpnH ˜ 4 × 1052(d/10kpc)2 erg cm-3.

Current transport and capacitance-voltage characteristics of an n-PbTe/p-GaP heterojunction prepared using the electron beam deposition technique

Science.gov (United States)

Nasr, Mahmoud; El Radaf, I. M.; Mansour, A. M.

2018-04-01

In this study, a crystalline n-PbTe/p-GaP heterojunction was fabricated using the electron beam deposition technique. The structural properties of the prepared heterojunction were examined by X-ray diffraction and scanning electron microscopy. The dark current-voltage characteristics of the heterojunction were investigated at different temperatures ranging from 298 to 398 K. The rectification factor, series resistance, shunt resistance, diode ideality factor, and effective barrier height (ϕb) were determined. The photovoltaic parameters were identified based on the current density-voltage characteristics under illumination. The capacitance-voltage characteristics showed that the junction was abrupt in nature.

Measurement system of high voltage and high current measurements at INMETRO - Brazilian Institute for Metrology, Standardization and Industrial Quality; Sistema de medicao de alta tensao e alta corrente do INMETRO - Brasil

Energy Technology Data Exchange (ETDEWEB)

Vitorio, Patricia Cals de O.; Franca, Ademir Martins de; Soares, Marco Aurelio; Pereira, Luiz Napoleao; Costa, Danielli Guimaraes; Moreira, Giselle Cobica; Nascimento, Paulo Roberto Mesquita [Instituto Nacional de Metrologia, Normalizacao e Qualidade Industrial (DIMCI/INMETRO), Duque de Caxias, RJ (Brazil). Diretoria de Metrologia Cientifica e Industrial], E-mail: latra@inmetro.gov.br

2009-07-01

This work presents the basic characteristics and uncertainties of the calibration equipment in high voltage and high current available at the INMETRO: system of measurement in alternating high voltage up to 200 kV, system of measurement in alternating current up to 2 k A, and system of measurement in continuous high voltage up to 150 kV.

A 1.4-V 48-μW current-mode front-end circuit for analog hearing aids with frequency compensation

International Nuclear Information System (INIS)

Wang Xiaoyu; Yang Haigang; Li Fanyang; Yin Tao; Liu Fei

2012-01-01

A current-mode front-end circuit with low voltage and low power for analog hearing aids is presented. The circuit consists of a current-mode AGC (automatic gain control) and a current-mode adaptive filter. Compared with its conventional voltage-mode counterparts, the proposed front-end circuit has the identified features of frequency compensation based on the state space theory and continuous gain with an exponential characteristic. The frequency compensation which appears only in the DSP unit of the digital hearing aid can upgrade the performance of the analog hearing aid in the field of low-frequency hearing loss. The continuous gain should meet the requirement of any input amplitude level, while its exponential characteristic leads to a large input dynamic range in accordance with the dB SPL (sound pressure level). Furthermore, the front-end circuit also provides a discrete knee point and discrete compression ratio to allow for high calibration flexibility. These features can accommodate users whose ears have different pain thresholds. Taking advantage of the current-mode technique, the MOS transistors work in the subthreshold region so that the quiescent current is small. Moreover, the input current can be compressed to a low voltage signal for processing according to the compression principle from the current-domain to the voltage-domain. Therefore, the objective of low voltage and low power (48 μW at 1.4 V) can be easily achieved in a high threshold-voltage CMOS process of 0.35 μm (V TON + |V TOP |≈ 1.35 V). The THD is below −45 dB. The fabricated chip only occupies the area of 1 × 0.5 mm 2 and 1 × 1 mm 2 .

Investigation of the double exponential in the current-voltage characteristics of silicon solar cells

Science.gov (United States)

Wolf, M.; Noel, G. T.; Stirn, R. J.

1976-01-01

A theoretical analysis is presented of certain peculiarities of the current-voltage characteristics of silicon solar cells, involving high values of the empirical constant A in the diode equation for a p-n junction. An attempt was made in a lab experiment to demonstrate that the saturation current which is associated with the exponential term qV/A2kT of the I-V characteristic, with A2 roughly equal to 2, originates in the space charge region and that it can be increased, as observed on ATS-1 cells, by the introduction of additional defects through low energy proton irradiation. It was shown that the proton irradiation introduces defects into the space charge region which give rise to a recombination current from this region, although the I-V characteristic is, in this case, dominated by an exponential term which has A = 1.

Modelling of illuminated current–voltage characteristics to evaluate leakage currents in long wavelength infrared mercury cadmium telluride photovoltaic detectors

International Nuclear Information System (INIS)

Gopal, Vishnu; Qiu, WeiCheng; Hu, Weida

2014-01-01

The current–voltage characteristics of long wavelength mercury cadmium telluride infrared detectors have been studied using a recently suggested method for modelling of illuminated photovoltaic detectors. Diodes fabricated on in-house grown arsenic and vacancy doped epitaxial layers were evaluated for their leakage currents. The thermal diffusion, generation–recombination (g-r), and ohmic currents were found as principal components of diode current besides a component of photocurrent due to illumination. In addition, both types of diodes exhibited an excess current component whose growth with the applied bias voltage did not match the expected growth of trap-assisted-tunnelling current. Instead, it was found to be the best described by an exponential function of the type, I excess  = I r0  + K 1 exp (K 2 V), where I r0 , K 1 , and K 2 are fitting parameters and V is the applied bias voltage. A study of the temperature dependence of the diode current components and the excess current provided the useful clues about the source of origin of excess current. It was found that the excess current in diodes fabricated on arsenic doped epitaxial layers has its origin in the source of ohmic shunt currents. Whereas, the source of excess current in diodes fabricated on vacancy doped epitaxial layers appeared to be the avalanche multiplication of photocurrent. The difference in the behaviour of two types of diodes has been attributed to the difference in the quality of epitaxial layers

Current regulators for I/SUP 2/L circuits to be operated from low-voltage power supplies

DEFF Research Database (Denmark)

Bruun, Erik; Hansen, Ole

1980-01-01

A new bandgap current reference is described which can be used to control the injector current of I/SUP 2/L circuits for supply voltages down to about 1 V. For small currents the total injector current is obtained as a mirror of the reference current. For large injector currents the current control......, but well controlled temperature coefficient is desired. It is shown how a temperature stable ring oscillator with I/SUP 2/L gates can be constructed by tailoring the temperature dependence of the supply current appropriately....

Measurement and statistical analysis of single-molecule current-voltage characteristics, transition voltage spectroscopy, and tunneling barrier height.

Science.gov (United States)

Guo, Shaoyin; Hihath, Joshua; Díez-Pérez, Ismael; Tao, Nongjian

2011-11-30

We report on the measurement and statistical study of thousands of current-voltage characteristics and transition voltage spectra (TVS) of single-molecule junctions with different contact geometries that are rapidly acquired using a new break junction method at room temperature. This capability allows one to obtain current-voltage, conductance voltage, and transition voltage histograms, thus adding a new dimension to the previous conductance histogram analysis at a fixed low-bias voltage for single molecules. This method confirms the low-bias conductance values of alkanedithiols and biphenyldithiol reported in literature. However, at high biases the current shows large nonlinearity and asymmetry, and TVS allows for the determination of a critically important parameter, the tunneling barrier height or energy level alignment between the molecule and the electrodes of single-molecule junctions. The energy level alignment is found to depend on the molecule and also on the contact geometry, revealing the role of contact geometry in both the contact resistance and energy level alignment of a molecular junction. Detailed statistical analysis further reveals that, despite the dependence of the energy level alignment on contact geometry, the variation in single-molecule conductance is primarily due to contact resistance rather than variations in the energy level alignment.

Random instabilities of current-voltage curves of BSCCO-2223/Ag multifilamentary tapes in LN2 at 77 K

CERN Document Server

Usak, P

2003-01-01

The measurement of the current-voltage (I-V) characteristics of BSCCO-2223/Ag multifilamentary tapes in a silver matrix has been performed on short samples (of several centimetres) as well as on long tape (1 m), wound in the form of a helical one-layer coil. Measurements at 77 K and in zero external magnetic field have revealed good reproducibility of the I-V hysteresis in most runs. Nevertheless, strange irregularities have sometimes been observed in the I-V curve behaviour during current ramping up and down. Quasi-reproducible drops from the ascending hysteretic branch in the direction of the descending one have been measured at higher voltage levels (approx 1 mV cm sup - sup 1) on the curve measured on the helical coil. These have recently been explained by a sudden change in the heat transfer coefficient [1]. Rarely and non-reproducibly we have also observed these drops on short samples at E approx 1 x 10 sup - sup 2 V m sup - sup 1 , (and even under 1 x 10 sup - sup 3 V m sup - sup 1). The accidental dro...

Two coupled Josephson junctions: dc voltage controlled by biharmonic current

International Nuclear Information System (INIS)

Machura, L; Spiechowicz, J; Kostur, M; Łuczka, J

2012-01-01

We study transport properties of two Josephson junctions coupled by an external shunt resistance. One of the junctions (say, the first) is driven by an unbiased ac current consisting of two harmonics. The device can rectify the ac current yielding a dc voltage across the first junction. For some values of coupling strength, controlled by an external shunt resistance, a dc voltage across the second junction can be generated. By variation of system parameters such as the relative phase or frequency of two harmonics, one can conveniently manipulate both voltages with high efficiency, e.g. changing the dc voltages across the first and second junctions from positive to negative values and vice versa. (paper)

A J matrix engine for density functional theory calculations

International Nuclear Information System (INIS)

White, C.A.; Head-Gordon, M.

1996-01-01

We introduce a new method for the formation of the J matrix (Coulomb interaction matrix) within a basis of Cartesian Gaussian functions, as needed in density functional theory and Hartree endash Fock calculations. By summing the density matrix into the underlying Gaussian integral formulas, we have developed a J matrix open-quote open-quote engine close-quote close-quote which forms the exact J matrix without explicitly forming the full set of two electron integral intermediates. Several precomputable quantities have been identified, substantially reducing the number of floating point operations and memory accesses needed in a J matrix calculation. Initial timings indicate a speedup of greater than four times for the (pp parallel pp) class of integrals with speedups increasing to over ten times for (ff parallel ff) integrals. copyright 1996 American Institute of Physics

Modeling on oxide dependent 2DEG sheet charge density and threshold voltage in AlGaN/GaN MOSHEMT

Science.gov (United States)

Panda, J.; Jena, K.; Swain, R.; Lenka, T. R.

2016-04-01

We have developed a physics based analytical model for the calculation of threshold voltage, two dimensional electron gas (2DEG) density and surface potential for AlGaN/GaN metal oxide semiconductor high electron mobility transistors (MOSHEMT). The developed model includes important parameters like polarization charge density at oxide/AlGaN and AlGaN/GaN interfaces, interfacial defect oxide charges and donor charges at the surface of the AlGaN barrier. The effects of two different gate oxides (Al2O3 and HfO2) are compared for the performance evaluation of the proposed MOSHEMT. The MOSHEMTs with Al2O3 dielectric have an advantage of significant increase in 2DEG up to 1.2 × 1013 cm-2 with an increase in oxide thickness up to 10 nm as compared to HfO2 dielectric MOSHEMT. The surface potential for HfO2 based device decreases from 2 to -1.6 eV within 10 nm of oxide thickness whereas for the Al2O3 based device a sharp transition of surface potential occurs from 2.8 to -8.3 eV. The variation in oxide thickness and gate metal work function of the proposed MOSHEMT shifts the threshold voltage from negative to positive realizing the enhanced mode operation. Further to validate the model, the device is simulated in Silvaco Technology Computer Aided Design (TCAD) showing good agreement with the proposed model results. The accuracy of the developed calculations of the proposed model can be used to develop a complete physics based 2DEG sheet charge density and threshold voltage model for GaN MOSHEMT devices for performance analysis.

Analysis of high field effects on the steady-state current-voltage response of semi-insulating 4H-SiC for photoconductive switch applications

Energy Technology Data Exchange (ETDEWEB)

Tiskumara, R. [Department of Electrical and Computer Engineering, Old Dominion University, Norfolk, Virginia 23529 (United States); Joshi, R. P., E-mail: ravi.joshi@ttu.edu; Mauch, D.; Dickens, J. C.; Neuber, A. A. [Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, Texas 79409 (United States)

2015-09-07

A model-based analysis of the steady-state, current-voltage response of semi-insulating 4H-SiC is carried out to probe the internal mechanisms, focusing on electric field driven effects. Relevant physical processes, such as multiple defects, repulsive potential barriers to electron trapping, band-to-trap impact ionization, and field-dependent detrapping, are comprehensively included. Results of our model match the available experimental data fairly well over orders of magnitude variation in the current density. A number of important parameters are also extracted in the process through comparisons with available data. Finally, based on our analysis, the possible presence of holes in the samples can be discounted up to applied fields as high as ∼275 kV/cm.

High-voltage pulse generator for electron gun power supply

International Nuclear Information System (INIS)

Korenev, S.A.; Enchevich, I.B.; Mikhov, M.K.

1987-01-01

High-voltage pulse generator with combined capacitive and inductive energy storages for electron gun power supply is described. Hydrogen thyratron set in a short magnetic lense is a current breaker. Times of current interruption in thyratrons are in the range from 100 to 300 ns. With 1 kV charging voltage of capacitive energy storage 25 kV voltage pulse is obtained in the load. The given high-voltage pulse generator was used for supply of an electron gun generating 10-30 keV low-energy electron beam

Voltage Analysis Improvement of 150 kV Transmission Subsystem Using Static Synchronous Compensator (STATCOM)

Science.gov (United States)

Akbar, P. A.; Hakim, D. L.; Sucita, T.

2018-02-01

In this research, testing improvements to the distribution voltage electricity at 150 kV transmission subsystem Bandung Selatan and New Ujungberung using Flexible AC Transmission System (FACTS) technology. One of them is by doing the control of active and reactive power through the power electronics equipment Static Synchronous Compensator (STATCOM). The subsystem is tested because it has a voltage profile are relatively less well when based on the IEEE / ANSI C.84.1 (142.5 - 157.5 kV). This study was conducted by analyzing the Newton-Raphson power flow on the simulator DigSilent Power Factory 15 to determine the profile of the voltage (V) on the system. Bus which has the lowest voltage to be a reference in the installation of STATCOM. From this research is known that the voltage on the conditions of the existing bus 28, as many as 21-23 still below standard buses (142.5 kV), after the installation is done using STATCOM, voltage on the buses improved by increasing the number of tracks that follow the standard / is in the range 142.5 kV -157.5 kV as many as 23-27 buses or 78.6% - 96%, with the optimum mounting on a bus Rancaekek STATCOM II with a capacity of 300 MVA.

Anodic Oxidation of Carbon Steel at High Current Densities and Investigation of Its Corrosion Behavior

Science.gov (United States)

Fattah-Alhosseini, Arash; Khan, Hamid Yazdani

2017-06-01

This work aims at studying the influence of high current densities on the anodization of carbon steel. Anodic protective coatings were prepared on carbon steel at current densities of 100, 125, and 150 A/dm2 followed by a final heat treatment. Coatings microstructures and morphologies were analyzed using X-ray diffraction (XRD) and scanning electron microscope (SEM). The corrosion resistance of the uncoated carbon steel substrate and the anodic coatings were evaluated in 3.5 wt pct NaCl solution through electrochemical impedance spectroscopy (EIS) and potentiodynamic polarization measurements. The results showed that the anodic oxide coatings which were prepared at higher current densities had thicker coatings as a result of a higher anodic forming voltage. Therefore, the anodized coatings showed better anti-corrosion properties compared to those obtained at lower current densities and the base metal.

A uniform laminar air plasma plume with large volume excited by an alternating current voltage

Science.gov (United States)

Li, Xuechen; Bao, Wenting; Chu, Jingdi; Zhang, Panpan; Jia, Pengying

2015-12-01

Using a plasma jet composed of two needle electrodes, a laminar plasma plume with large volume is generated in air through an alternating current voltage excitation. Based on high-speed photography, a train of filaments is observed to propagate periodically away from their birth place along the gas flow. The laminar plume is in fact a temporal superposition of the arched filament train. The filament consists of a negative glow near the real time cathode, a positive column near the real time anode, and a Faraday dark space between them. It has been found that the propagation velocity of the filament increases with increasing the gas flow rate. Furthermore, the filament lifetime tends to follow a normal distribution (Gaussian distribution). The most probable lifetime decreases with increasing the gas flow rate or decreasing the averaged peak voltage. Results also indicate that the real time peak current decreases and the real time peak voltage increases with the propagation of the filament along the gas flow. The voltage-current curve indicates that, in every discharge cycle, the filament evolves from a Townsend discharge to a glow one and then the discharge quenches. Characteristic regions including a negative glow, a Faraday dark space, and a positive column can be discerned from the discharge filament. Furthermore, the plasma parameters such as the electron density, the vibrational temperature and the gas temperature are investigated based on the optical spectrum emitted from the laminar plume.

The Grid Density Dependence of the Unsteady Pressures of the J-2X Turbines

Science.gov (United States)

Schmauch, Preston B.

2011-01-01

The J-2X engine was originally designed for the upper stage of the cancelled Crew Launch Vehicle. Although the Crew Launch Vehicle was cancelled the J-2X engine, which is currently undergoing hot-fire testing, may be used on future programs. The J-2X engine is a direct descendent of the J-2 engine which powered the upper stage during the Apollo program. Many changes including a thrust increase from 230K to 294K lbf have been implemented in this engine. As part of the design requirements, the turbine blades must meet minimum high cycle fatigue factors of safety for various vibrational modes that have resonant frequencies in the engine's operating range. The unsteady blade loading is calculated directly from CFD simulations. A grid density study was performed to understand the sensitivity of the spatial loading and the magnitude of the on blade loading due to changes in grid density. Given that the unsteady blade loading has a first order effect on the high cycle fatigue factors of safety, it is important to understand the level of convergence when applying the unsteady loads. The convergence of the unsteady pressures of several grid densities will be presented for various frequencies in the engine's operating range.

Numerical study of the influence of applied voltage on the current balance factor of single layer organic light-emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Lu, Fei-ping, E-mail: lufp-sysu@163.com; Liu, Xiao-bin; Xing, Yong-zhong [College of Physics and Information Science, Tianshui Normal University, Tianshui 741001 (China)

2014-04-28

Current balance factor (CBF) value, the ratio of the recombination current density and the total current density of a device, has an important function in fluorescence-based organic light-emitting diodes (OLEDs), as well as in the performance of the organic electrophosphorescent devices. This paper investigates the influence of the applied voltage of a device on the CBF value of single layer OLED based on the numerical model of a bipolar single layer OLED with organic layer trap free and without doping. Results show that the largest CBF value can be achieved when the electron injection barrier (ϕ{sub n}) is equal to the hole injection barrier (ϕ{sub p}) in the lower voltage region at any instance. The largest CBF in the higher voltage region can be achieved in the case of ϕ{sub n} > ϕ{sub p} under the condition of electron mobility (μ{sub 0n}) > hole mobility (μ{sub 0p}), whereas the result for the case of μ{sub 0n} < μ{sub 0p}, is opposite. The largest CBF when μ{sub 0n} = μ{sub 0p} can be achieved in the case of ϕ{sub n} = ϕ{sub p} in the entire region of the applied voltage. In addition, the CBF value of the device increases with increasing applied voltage. The results obtained in this paper can present an in-depth understanding of the OLED working mechanism and help in the future fabrication of high efficiency OLEDs.

Design and test of voltage and current probes for EAST ICRF antenna impedance measurement

Science.gov (United States)

Jianhua, WANG; Gen, CHEN; Yanping, ZHAO; Yuzhou, MAO; Shuai, YUAN; Xinjun, ZHANG; Hua, YANG; Chengming, QIN; Yan, CHENG; Yuqing, YANG; Guillaume, URBANCZYK; Lunan, LIU; Jian, CHENG

2018-04-01

On the experimental advanced superconducting tokamak (EAST), a pair of voltage and current probes (V/I probes) is installed on the ion cyclotron radio frequency transmission lines to measure the antenna input impedance, and supplement the conventional measurement technique based on voltage probe arrays. The coupling coefficients of V/I probes are sensitive to their sizes and installing locations, thus they should be determined properly to match the measurement range of data acquisition card. The V/I probes are tested in a testing platform at low power with various artificial loads. The testing results show that the deviation of coupling resistance is small for loads R L > 2.5 Ω, while the resistance deviations appear large for loads R L phase measurement error is the more significant factor leads to deleterious results rather than the amplitude measurement error. To exclude the possible ingredients that may lead to phase measurement error, the phase detector can be calibrated in steady L-mode scenario and then use the calibrated data for calculation under H-mode cases in EAST experiments.

Limitations of threshold voltage engineering of AlGaN/GaN heterostructures by dielectric interface charge density and manipulation by oxygen plasma surface treatments

Science.gov (United States)

Lükens, G.; Yacoub, H.; Kalisch, H.; Vescan, A.

2016-05-01

The interface charge density between the gate dielectric and an AlGaN/GaN heterostructure has a significant impact on the absolute value and stability of the threshold voltage Vth of metal-insulator-semiconductor (MIS) heterostructure field effect transistor. It is shown that a dry-etching step (as typically necessary for normally off devices engineered by gate-recessing) before the Al2O3 gate dielectric deposition introduces a high positive interface charge density. Its origin is most likely donor-type trap states shifting Vth to large negative values, which is detrimental for normally off devices. We investigate the influence of oxygen plasma annealing techniques of the dry-etched AlGaN/GaN surface by capacitance-voltage measurements and demonstrate that the positive interface charge density can be effectively compensated. Furthermore, only a low Vth hysteresis is observable making this approach suitable for threshold voltage engineering. Analysis of the electrostatics in the investigated MIS structures reveals that the maximum Vth shift to positive voltages achievable is fundamentally limited by the onset of accumulation of holes at the dielectric/barrier interface. In the case of the Al2O3/Al0.26Ga0.74N/GaN material system, this maximum threshold voltage shift is limited to 2.3 V.

Balanced Current Control Strategy for Current Source Rectifier Stage of Indirect Matrix Converter under Unbalanced Grid Voltage Conditions

Directory of Open Access Journals (Sweden)

Yeongsu Bak

2016-12-01

Full Text Available This paper proposes a balanced current control strategy for the current source rectifier (CSR stage of an indirect matrix converter (IMC under unbalanced grid voltage conditions. If the three-phase grid connected to the voltage source inverter (VSI of the IMC has unbalanced voltage conditions, it affects the currents of the CSR stage and VSI stage, and the currents are distorted. Above all, the distorted currents of the CSR stage cause instability in the overall system, which can affect the life span of the system. Therefore, in this paper, a control strategy for balanced currents in the CSR stage is proposed. To achieve balanced currents in the CSR stage, the VSI stage should receive DC power without ripple components from the CSR stage. This is implemented by controlling the currents in the VSI stage. Therefore, the proposed control strategy decouples the positive and negative phase-sequence components existing in the unbalanced voltages and currents of the VSI stage. Using the proposed control strategy under unbalanced grid voltage conditions, the stability and life span of the overall system can be improved. The effectiveness of the proposed control strategy is verified by simulation and experimental results.

Charge Transport in Carbon Nanotubes-Polymer Composite Photovoltaic Cells

Science.gov (United States)

Ltaief, Adnen; Bouazizi, Abdelaziz; Davenas, Joel

2009-01-01

We investigate the dark and illuminated current density-voltage (J/V) characteristics of poly(2-methoxy-5-(2’-ethylhexyloxy)1-4-phenylenevinylene) (MEH-PPV)/single-walled carbon nanotubes (SWNTs) composite photovoltaic cells. Using an exponential band tail model, the conduction mechanism has been analysed for polymer only devices and composite devices, in terms of space charge limited current (SCLC) conduction mechanism, where we determine the power parameters and the threshold voltages. Elaborated devices for MEH-PPV:SWNTs (1:1) composites showed a photoresponse with an open-circuit voltage Voc of 0.4 V, a short-circuit current density JSC of 1 µA/cm² and a fill factor FF of 43%. We have modelised the organic photovoltaic devices with an equivalent circuit, where we calculated the series and shunt resistances.

Voltage-driven versus current-driven spin torque in anisotropic tunneling junctions

KAUST Repository

Manchon, Aurelien

2011-01-01

Nonequilibrium spin transport in a magnetic tunnel junction comprising a single magnetic layer in the presence of interfacial spin-orbit interaction (SOI) is studied theoretically. The interfacial SOI generates a spin torque of the form T=T∥ M×(z× M)+T⊥ z× M, even in the absence of an external spin polarizer. For thick and large tunnel barriers, the torque reduces to the perpendicular component T⊥, which can be electrically tuned by applying a voltage across the insulator. In the limit of thin and low tunnel barriers, the in-plane torque T∥ emerges, proportional to the tunneling current density. Experimental implications on magnetic devices are discussed. © 2011 IEEE.

Voltage-driven versus current-driven spin torque in anisotropic tunneling junctions

KAUST Repository

Manchon, Aurelien

2011-10-01

Nonequilibrium spin transport in a magnetic tunnel junction comprising a single magnetic layer in the presence of interfacial spin-orbit interaction (SOI) is studied theoretically. The interfacial SOI generates a spin torque of the form T=T∥ M×(z× M)+T⊥ z× M, even in the absence of an external spin polarizer. For thick and large tunnel barriers, the torque reduces to the perpendicular component T⊥, which can be electrically tuned by applying a voltage across the insulator. In the limit of thin and low tunnel barriers, the in-plane torque T∥ emerges, proportional to the tunneling current density. Experimental implications on magnetic devices are discussed. © 2011 IEEE.

High performance of PbSe/PbS core/shell quantum dot heterojunction solar cells: short circuit current enhancement without the loss of open circuit voltage by shell thickness control.

Science.gov (United States)

Choi, Hyekyoung; Song, Jung Hoon; Jang, Jihoon; Mai, Xuan Dung; Kim, Sungwoo; Jeong, Sohee

2015-11-07

We fabricated heterojunction solar cells with PbSe/PbS core shell quantum dots and studied the precisely controlled PbS shell thickness dependency in terms of optical properties, electronic structure, and solar cell performances. When the PbS shell thickness increases, the short circuit current density (JSC) increases from 6.4 to 11.8 mA cm(-2) and the fill factor (FF) enhances from 30 to 49% while the open circuit voltage (VOC) remains unchanged at 0.46 V even with the decreased effective band gap. We found that the Fermi level and the valence band maximum level remain unchanged in both the PbSe core and PbSe/PbS core/shell with a less than 1 nm thick PbS shell as probed via ultraviolet photoelectron spectroscopy (UPS). The PbS shell reduces their surface trap density as confirmed by relative quantum yield measurements. Consequently, PbS shell formation on the PbSe core mitigates the trade-off relationship between the open circuit voltage and the short circuit current density. Finally, under the optimized conditions, the PbSe core with a 0.9 nm thick shell yielded a power conversion efficiency of 6.5% under AM 1.5.

Low voltage electroosmotic pump for high density integration into microfabricated fluidic systems

NARCIS (Netherlands)

Heuck, F.C.A.; Staufer, U.

2011-01-01

A low voltage electroosmotic (eo) pump suitable for high density integration into microfabricated fluidic systems has been developed. The high density integration of the eo pump required a small footprint as well as a specific on-chip design to ventilate the electrolyzed gases emerging at the

The Arizona Radio Observatory CO Mapping Survey of Galactic Molecular Clouds. V. The Sh2-235 Cloud in CO J=2-1, 13CO J=2-1, and CO J=3-2

Science.gov (United States)

Bieging, John H.; Patel, Saahil; Peters, William L.; Toth, L. Viktor; Marton, Gábor; Zahorecz, Sarolta

2016-09-01

We present the results of a program to map the Sh2-235 molecular cloud complex in the CO and 13CO J = 2 - 1 transitions using the Heinrich Hertz Submillimeter Telescope. The map resolution is 38″ (FWHM), with an rms noise of 0.12 K brightness temperature, for a velocity resolution of 0.34 km s-1. With the same telescope, we also mapped the CO J = 3 - 2 line at a frequency of 345 GHz, using a 64 beam focal plane array of heterodyne mixers, achieving a typical rms noise of 0.5 K brightness temperature with a velocity resolution of 0.23 km s-1. The three spectral line data cubes are available for download. Much of the cloud appears to be slightly sub-thermally excited in the J = 3 level, except for in the vicinity of the warmest and highest column density areas, which are currently forming stars. Using the CO and 13CO J = 2 - 1 lines, we employ an LTE model to derive the gas column density over the entire mapped region. Examining a 125 pc2 region centered on the most active star formation in the vicinity of Sh2-235, we find that the young stellar object surface density scales as approximately the 1.6-power of the gas column density. The area distribution function of the gas is a steeply declining exponential function of gas column density. Comparison of the morphology of ionized and molecular gas suggests that the cloud is being substantially disrupted by expansion of the H II regions, which may be triggering current star formation.

The Voltage-Sensing Domain of K(v)7.2 Channels as a Molecular Target for Epilepsy-Causing Mutations and Anticonvulsants.

Science.gov (United States)

Miceli, Francesco; Soldovieri, Maria Virginia; Iannotti, Fabio Arturo; Barrese, Vincenzo; Ambrosino, Paolo; Martire, Maria; Cilio, Maria Roberta; Taglialatela, Maurizio

2011-01-01

Understanding the molecular mechanisms underlying voltage-dependent gating in voltage-gated ion channels (VGICs) has been a major effort over the last decades. In recent years, changes in the gating process have emerged as common denominators for several genetically determined channelopathies affecting heart rhythm (arrhythmias), neuronal excitability (epilepsy, pain), or skeletal muscle contraction (periodic paralysis). Moreover, gating changes appear as the main molecular mechanism by which several natural toxins from a variety of species affect ion channel function. In this work, we describe the pathophysiological and pharmacological relevance of the gating process in voltage-gated K(+) channels encoded by the K(v)7 gene family. After reviewing the current knowledge on the molecular mechanisms and on the structural models of voltage-dependent gating in VGICs, we describe the physiological relevance of these channels, with particular emphasis on those formed by K(v)7.2-K(v)7.5 subunits having a well-established role in controlling neuronal excitability in humans. In fact, genetically determined alterations in K(v)7.2 and K(v)7.3 genes are responsible for benign familial neonatal convulsions, a rare seizure disorder affecting newborns, and the pharmacological activation of K(v)7.2/3 channels can exert antiepileptic activity in humans. Both mutation-triggered channel dysfunction and drug-induced channel activation can occur by impeding or facilitating, respectively, channel sensitivity to membrane voltage and can affect overlapping molecular sites within the voltage-sensing domain of these channels. Thus, understanding the molecular steps involved in voltage-sensing in K(v)7 channels will allow to better define the pathogenesis of rare human epilepsy, and to design innovative pharmacological strategies for the treatment of epilepsies and, possibly, other human diseases characterized by neuronal hyperexcitability.

Electrochemical Properties of Current Collector in the All-vanadium Redox Flow Battery

International Nuclear Information System (INIS)

Hwang, Gan-Jin; Oh, Yong-Hwan; Ryu, Cheol-Hwi; Choi, Ho-Sang

2014-01-01

Two commercial carbon plates were evaluated as a current collector (bipolar plate) in the all vanadium redox-flow battery (V-RFB). The performance properties of V-RFB were test in the current density of 60 mA/cm 2 . The electromotive forces (OCV at SOC 100%) of V-RFB using A and B current collector were 1.47 V and 1.54 V. The cell resistance of V-RFB using A current collector was 4.44-5.00 Ω·cm 2 and 3.28-3.75 Ω·cm 2 for charge and discharge, respectively. The cell resistance of V-RFB using B current collector was 4.19-4.42Ω·cm 2 and 4.71-5.49Ω·cm 2 for charge and discharge, respectively. The performance of V-RFB using each current collector was evaluated. The performance of V-RFB using A current collector was 93.1%, 76.8% and 71.4% for average current efficiency, average voltage efficiency and average energy efficiency, respectively. The performance of V-RFB using B current collector was 96.4%, 73.6% and 71.0% for average current efficiency, average voltage efficiency and average energy efficiency, respectively

Enhanced vortex pinning and critical current density in proton-irradiated YBa2Cu3O7-δ thin films

International Nuclear Information System (INIS)

Venturini, E.L.; Siegal, M.P.; White, A.E.; Hou, S.Y.; Phillips, J.M.

1993-01-01

The appropriate fluence of 2.0 MeV H + ions has been shown previously to enhance the critical current density J c by a factor of two at a magnetic field of 0.9 tesla in 1,000 angstrom thick epitaxial films of YBa 2 Cu 3 O 7-δ grown by the ex situ BaF 2 process. The as-grown films exhibit single crystal-like behavior in both atomic ordering and J c versus temperature and magnetic field. TRIM simulations suggest that H + irradiation generates mainly point defects throughout the crystal structure. The authors show here that such defects result in an even greater enhancement of J c for fields above 1 tesla plus a significant increase in the apparent vortex pinning potential deduced from magnetization relaxation data

Enhanced vortex pinning and critical current density in proton-irradiated YBa2Cu3O(7-delta) thin films

Science.gov (United States)

Venturini, E. L.; Siegal, M. P.; White, A. E.; Hou, S. Y.; Phillips, J. M.

1992-11-01

The appropriate fluence of 2.0 MeV H(sup +) ions has been shown previously to enhance the critical current density J(sub c) by a factor of two at a magnetic field of 0.9 tesla in 1000 (Angstrom) thick epitaxial films of YBa(2)Cu(3)O(7-delta) grown by the ex situ BaF2 process. The as-grown films exhibit single crystal-like behavior in both atomic ordering and J(sub c) versus temperature and magnetic field. TRIM simulations suggest that H(sup +) irradiation generates mainly point defects throughout the crystal structure. We show here that such defects produce both a large enhancement of J(sub c) for fields above 1 tesla and a significant increase in the apparent vortex pinning potential deduced from magnetization relaxation data.

Branching in current-voltage characteristics of intrinsic Josephson junctions

International Nuclear Information System (INIS)

Shukrinov, Yu M; Mahfouzi, F

2007-01-01

We study branching in the current-voltage characteristics of the intrinsic Josephson junctions of high-temperature superconductors in the framework of the capacitively coupled Josephson junction model with diffusion current. A system of dynamical equations for the gauge-invariant phase differences between superconducting layers for a stack of ten intrinsic junctions has been numerically solved. We have obtained a total branch structure in the current-voltage characteristics. We demonstrate the existence of a 'breakpoint region' on the current-voltage characteristics and explain it as a result of resonance between Josephson and plasma oscillations. The effect of the boundary conditions is investigated. The existence of two outermost branches and correspondingly two breakpoint regions for the periodic boundary conditions is shown. One branch, which is observed only at periodic boundary conditions, corresponds to the propagating of the plasma mode. The second one corresponds to the situation when the charge oscillations on the superconducting layers are absent, excluding the breakpoint. A time dependence of the charge oscillations at breakpoints is presented

Molecular Surface of JZTX-V (β-Theraphotoxin-Cj2a Interacting with Voltage-Gated Sodium Channel Subtype NaV1.4

Directory of Open Access Journals (Sweden)

Ji Luo

2014-07-01

Full Text Available Voltage-gated sodium channels (VGSCs; NaV1.1–NaV1.9 have been proven to be critical in controlling the function of excitable cells, and human genetic evidence shows that aberrant function of these channels causes channelopathies, including epilepsy, arrhythmia, paralytic myotonia, and pain. The effects of peptide toxins, especially those isolated from spider venom, have shed light on the structure–function relationship of these channels. However, most of these toxins have not been analyzed in detail. In particular, the bioactive faces of these toxins have not been determined. Jingzhaotoxin (JZTX-V (also known as β-theraphotoxin-Cj2a is a 29-amino acid peptide toxin isolated from the venom of the spider Chilobrachys jingzhao. JZTX-V adopts an inhibitory cysteine knot (ICK motif and has an inhibitory effect on voltage-gated sodium and potassium channels. Previous experiments have shown that JZTX-V has an inhibitory effect on TTX-S and TTX-R sodium currents on rat DRG cells with IC50 values of 27.6 and 30.2 nM, respectively, and is able to shift the activation and inactivation curves to the depolarizing and the hyperpolarizing direction, respectively. Here, we show that JZTX-V has a much stronger inhibitory effect on NaV1.4, the isoform of voltage-gated sodium channels predominantly expressed in skeletal muscle cells, with an IC50 value of 5.12 nM, compared with IC50 values of 61.7–2700 nM for other heterologously expressed NaV1 subtypes. Furthermore, we investigated the bioactive surface of JZTX-V by alanine-scanning the effect of toxin on NaV1.4 and demonstrate that the bioactive face of JZTX-V is composed of three hydrophobic (W5, M6, and W7 and two cationic (R20 and K22 residues. Our results establish that, consistent with previous assumptions, JZTX-V is a Janus-faced toxin which may be a useful tool for the further investigation of the structure and function of sodium channels.

Electric Field and Current Density Performance Analysis of Sf6, C4f8 and CO2 Gases As An Insulation

Science.gov (United States)

Mazli, Ahmad Danial Ahmad; Jamail, Nor Akmal Mohd; Azlin Othman, Nordiana

2017-08-01

SF6 gases are not only widely used as an insulating component in electric power industry but also as an arc extinguishing performance in high voltage (HV) gas-insulated circuit breaker (GCB). SF6 gases is generally used in the production of semiconductor materials and devices. Though these gasses is widely used in many application, the presences of temperature hotspot in the insulations may affect the insulation characteristics particularly electric field and current density. Therefore, it is important to determine the relationship between electric field and current density of gasses used in the insulator in the presence of hotspot. In this paper, three types of gases in particular Sulphur Hexafluoride (SF6), Octafluorocylobutane (C4F8), and Carbon Dioxide (CO2) was used in the insulator for gas insulation with the presence of two hotspots. These two hotspost were detected by referring the rising temperature in the insulator which are 1000 and 2000 Kelvin temperature for hotspot 1 and hotspot 2, respectively. From the simulation results, it can be concluded that Sulphur Hexafluoride (SF6) is the best choice for gas insulation since it had the lowest current density and electric field compared to Octafluorocylobutane (C4F8), and Carbon Dioxide (CO2). It is observed that the maximum current density and electric field for SF6 during normal condition are 358.94 × 103 V/m and 0.643 × 109 A/m2, respectively. Meanwhile, during temperature rising at hotspot 1 and hotspot 2, SF6 also had lowest current density and electric field compared to the other gasses where the results for Emax and Jmax at hotspot 1 are 322.34 × 103 V/m and 1.934 × 109 A/m2, respectively; While, Emax and Jmax at hotspot 2 are 259.77× 103 V/m and 2.824 × 109 A/m2. The results of this analysis can be used to find the best choices of gas that can be used in the insulator.

First time observation of local current shrinkage during the MARFE behavior on the J-TEXT tokamak

Science.gov (United States)

Shi, Peng; Zhuang, G.; Gentle, K.; Hu, Qiming; Chen, Jie; Li, Qiang; Liu, Yang; Gao, Li; Zhang, Xiaolong; Liu, Hai; Chen, Zhipeng; Zhu, Lizhi; Li, Fuming; Zhou, Yinan; Zeng, Zhong; Liu, Linzi; He, Jiyang

2017-11-01

Multifaceted asymmetric radiation as well as strong poloidal asymmetry of the electron density from the edge, dubbed as ‘MARFE’, has been observed in high electron density Ohmically heated plasmas on J-TEXT tokamak. Equilibrium reconstruction based on the measured data from the 17-channel FIR polarimeter-interferometer indicates that an asymmetric plasma current density distribution forms at the edge region and the plasma current shrinkage locates at the MARFE affected region. Furthermore, associated with the localized plasma current shrinkage, a locked mode MHD activity is excited, which then terminate the discharge with a major disruption. Localized plasma current shrinkage at the MARFE region is considered to be the direct cause for the density limit disruptions, and the proposed interpretation is consistent with the experimental observations.

Effect of strain on the critical-current density of Cu-Nb composites

International Nuclear Information System (INIS)

Klein, J.D.; Rose, R.M.

1987-01-01

Microfilamentary superconducting composites of Nb fibers in Cu matrices prepared by the stack and draw method were tested for tensile critical-current performance at 4.2 K. The superconducting critical-current densities increased exponentially under the influence of an applied mechanical strain until the onset of Nb fiber plastic deformation. In the elastic range, the critical-current densities conformed to log 10 J/sub c/ = m (strain)+b. In several tests the critical current was increased by more than an order of magnitude by the applied strain. This behavior is consistent with an increase in the upper critical field of the Nb fibers by the applied stress

Direct DC 10 V comparison between two programmable Josephson voltage standards made of niobium nitride (NbN)-based and niobium (Nb)-based Josephson junctions

Science.gov (United States)

Solve, S.; Chayramy, R.; Maruyama, M.; Urano, C.; Kaneko, N.-H.; Rüfenacht, A.

2018-04-01

BIPM’s new transportable programmable Josephson voltage standard (PJVS) has been used for an on-site comparison at the National Metrology Institute of Japan (NMIJ) and the National Institute of Advanced Industrial Science and Technology (AIST) (NMIJ/AIST, hereafter called just NMIJ unless otherwise noted). This is the first time that an array of niobium-based Josephson junctions with amorphous niobium silicon Nb x Si1-x barriers, developed by the National Institute of Standards and Technology4 (NIST), has been directly compared to an array of niobium nitride (NbN)-based junctions (developed by the NMIJ in collaboration with the Nanoelectronics Research Institute (NeRI), AIST). Nominally identical voltages produced by both systems agreed within 5 parts in 1012 (0.05 nV at 10 V) with a combined relative uncertainty of 7.9  ×  10-11 (0.79 nV). The low side of the NMIJ apparatus is, by design, referred to the ground potential. An analysis of the systematic errors due to the leakage current to ground was conducted for this ground configuration. The influence of a multi-stage low-pass filter installed at the output measurement leads of the NMIJ primary standard was also investigated. The number of capacitances in parallel in the filter and their insulation resistance have a direct impact on the amplitude of the systematic voltage error introduced by the leakage current, even if the current does not necessarily return to ground. The filtering of the output of the PJVS voltage leads has the positive consequence of protecting the array from external sources of noise. Current noise, when coupled to the array, reduces the width or current range of the quantized voltage steps. The voltage error induced by the leakage current in the filter is an order of magnitude larger than the voltage error in the absence of all filtering, even though the current range of steps is significantly decreased without filtering.

Current-voltage characteristics of individual conducting polymer nanotubes and nanowires

Institute of Scientific and Technical Information of China (English)

Long Yun-ze; Yin Zhi-Hua; Li Meng-Meng; Gu Chang-Zhi; Duvail Jean-Luc; Jin Ai-zi; Wan Mei-xiang

2009-01-01

We report the current-voltage (Ⅰ-Ⅴ) characteristics of individual polypyrrole nanotubes and poly(3,4-ethylenedioxythiophene) (PEDOT) nanowires in a temperature range from 300 K to 2 K. Considering the complex structures of such quasi-one-dimensional systems with an array of ordered conductive regions separated by disordered barriers, we use the extended fluctuation-induced tunneling (FIT) and thermal excitation model (Kaiser expression) to fit the temperature and electric-field dependent Ⅰ-Ⅴ curves. It is found that the Ⅰ-Ⅴ data measured at higher temperatures or higher voltages can be well fitted by the Kaiser expression. However, the low-temperature data around the zero bias clearly deviate from those obtained from this model. The deviation (or zero-bias conductance suppression)could be possibly ascribed to the occurrence of the Coulomb-gap in the density of states near the Femi level and/or the enhancement of electron-electron interaction resulting from nanosize effects, which have been revealed in the previous studies on low-temperature electronic transport in conducting polymer films, pellets and nanostructures. In addition,similar Ⅰ-Ⅴ characteristics and deviation are also observed in an isolated K0.27MnO2 nanowire.

Low operating voltage InGaZnO thin-film transistors based on Al2O3 high-k dielectrics fabricated using pulsed laser deposition

International Nuclear Information System (INIS)

Geng, G. Z.; Liu, G. X.; Zhang, Q.; Shan, F. K.; Lee, W. J.; Shin, B. C.; Cho, C. R.

2014-01-01

Low-voltage-driven amorphous indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) with an Al 2 O 3 dielectric were fabricated on a Si substrate by using pulsed laser deposition. Both Al 2 O 3 and IGZO thin films are amorphous, and the thin films have very smooth surfaces. The Al 2 O 3 gate dielectric exhibits a very low leakage current density of 1.3 x 10 -8 A/cm 2 at 5 V and a high capacitance density of 60.9 nF/cm 2 . The IGZO TFT with a structure of Ni/IGZO/Al 2 O 3 /Si exhibits high performance with a low threshold voltage of 1.18 V, a high field effect mobility of 20.25 cm 2 V -1 s -1 , an ultra small subthreshold swing of 87 mV/decade, and a high on/off current ratio of 3 x 10 7 .

Maximum permissible voltage of YBCO coated conductors

Energy Technology Data Exchange (ETDEWEB)

Wen, J.; Lin, B.; Sheng, J.; Xu, J.; Jin, Z. [Department of Electrical Engineering, Shanghai Jiao Tong University, Shanghai (China); Hong, Z., E-mail: zhiyong.hong@sjtu.edu.cn [Department of Electrical Engineering, Shanghai Jiao Tong University, Shanghai (China); Wang, D.; Zhou, H.; Shen, X.; Shen, C. [Qingpu Power Supply Company, State Grid Shanghai Municipal Electric Power Company, Shanghai (China)

2014-06-15

Highlights: • We examine three kinds of tapes’ maximum permissible voltage. • We examine the relationship between quenching duration and maximum permissible voltage. • Continuous I{sub c} degradations under repetitive quenching where tapes reaching maximum permissible voltage. • The relationship between maximum permissible voltage and resistance, temperature. - Abstract: Superconducting fault current limiter (SFCL) could reduce short circuit currents in electrical power system. One of the most important thing in developing SFCL is to find out the maximum permissible voltage of each limiting element. The maximum permissible voltage is defined as the maximum voltage per unit length at which the YBCO coated conductors (CC) do not suffer from critical current (I{sub c}) degradation or burnout. In this research, the time of quenching process is changed and voltage is raised until the I{sub c} degradation or burnout happens. YBCO coated conductors test in the experiment are from American superconductor (AMSC) and Shanghai Jiao Tong University (SJTU). Along with the quenching duration increasing, the maximum permissible voltage of CC decreases. When quenching duration is 100 ms, the maximum permissible of SJTU CC, 12 mm AMSC CC and 4 mm AMSC CC are 0.72 V/cm, 0.52 V/cm and 1.2 V/cm respectively. Based on the results of samples, the whole length of CCs used in the design of a SFCL can be determined.

A robust and stable PLC based control system for 40kJ/25kV EMM system

Energy Technology Data Exchange (ETDEWEB)

Sharma, Vijay; Saroj, P.C.; Kulkarni, M.R.; Kumar, Satendra, E-mail: vijay9819420563@gmail.com [Accelerator and Pulse Power Division, Bhabha Atomic Research Centre, Mumbai (India)

2014-07-01

This paper describes the PLC based control system developed for a 40kJ/25kV Electro-magnetic machining (EMM) system. In EMM system large capacitor banks is charged with high voltage to store large energy and the banks is made to discharge into a coil within few milli-seconds using a triggered spark gaps. During discharge of the capacitor large surges and transients are generated in the system. The control system monitors/controls and interlocks all the units of the system for proper operation. The control system is the only subsystem which is electrically connected to all the low and high voltage subsystems. Care should be taken at the signal interfacing with the control system to protect the control system. (author)

A robust and stable PLC based control system for 40kJ/25kV EMM system

International Nuclear Information System (INIS)

Sharma, Vijay; Saroj, P.C.; Kulkarni, M.R.; Kumar, Satendra

2014-01-01

This paper describes the PLC based control system developed for a 40kJ/25kV Electro-magnetic machining (EMM) system. In EMM system large capacitor banks is charged with high voltage to store large energy and the banks is made to discharge into a coil within few milli-seconds using a triggered spark gaps. During discharge of the capacitor large surges and transients are generated in the system. The control system monitors/controls and interlocks all the units of the system for proper operation. The control system is the only subsystem which is electrically connected to all the low and high voltage subsystems. Care should be taken at the signal interfacing with the control system to protect the control system. (author)