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Sample records for current dc magnetron

  1. Effect of interelectrode distance on dc magnetron current-pressure characteristics

    Science.gov (United States)

    Mankelevich, Yu A.; Pal, A. F.; Ryabinkin, A. N.; Serov, A. O.

    2018-01-01

    The current-pressure (I-P) non-monotonic characteristic in the magnetron discharge dc in argon at different interelectrode distances was investigated. The ion spatial distribution was obtained with optical emission spectroscopy and the characteristic dimensions of the discharge structure in near cathode region were determined. It is shown that decreasing the distance between electrodes does not affect the shape and position of the nonmonotonic part of I-P characteristic until this distance become comparable with the dimensions of the ionization region near cathode. The existence of non-monotonic part of I-P characteristic is determined by the processes in the near cathode region and is probably unrelated with the cold electron transfer in the rest of the plasma.

  2. Pulsed dc self-sustained magnetron sputtering

    International Nuclear Information System (INIS)

    Wiatrowski, A.; Posadowski, W. M.; Radzimski, Z. J.

    2008-01-01

    rates were observed for both dc and pulsed dc self-sustained sputtering processes. The pulse characteristics of the voltage and current of the magnetron source during pulsed dc-SSS operation are shown. The presented results illustrate that a stable pulsed dc-SSS process can be obtained at a pulsing frequency in the range of 60-90 kHz and duty factor of 80%-90%

  3. Discharge Characteristic of VHF-DC Superimposed Magnetron Sputtering System

    Science.gov (United States)

    Toyoda, Hirotaka; Fukuoka, Yushi; Fukui, Takashi; Takada, Noriharu; Sasai, Kensuke

    2014-10-01

    Magnetron plasmas are one of the most important tools for sputter deposition of thin films. However, energetic particles from the sputtered target such as backscattered rare gas atoms or oxygen negative ions from oxide targets sometimes induce physical and chemical damages as well as surface roughening to the deposited film surface during the sputtering processes. To suppress kinetic energy of such particles, superposition of RF or VHF power to the DC power has been investigated. In this study, influence of the VHF power superposition on the DC target voltage, which is important factor to determine kinetic energy of high energy particles, is investigated. In the study, 40 MHz VHF power was superimposed to an ITO target and decrease in the target DC voltage was measured as well as deposited film deposition properties such as deposition rate or electrical conductivity. From systematic measurement of the target voltage, it was revealed that the target voltage can be determined by a very simple parameter, i.e., a ratio of VHF power to the total input power (DC and VHF powers) in spite of the DC discharge current. Part of this work was supported by ASTEP, JST.

  4. Heteroepitaxial Ge-on-Si by DC magnetron sputtering

    Directory of Open Access Journals (Sweden)

    Martin Steglich

    2013-07-01

    Full Text Available The growth of Ge on Si(100 by DC Magnetron Sputtering at various temperatures is studied by Spectroscopic Ellipsometry and Transmission Electron Microscopy. Smooth heteroepitaxial Ge films are prepared at relatively low temperatures of 380°C. Typical Stransky-Krastanov growth is observed at 410°C. At lower temperatures (320°C, films are essentially amorphous with isolated nanocrystallites at the Si-Ge interface. A minor oxygen contamination at the interface, developing after ex-situ oxide removal, is not seen to hinder epitaxy. Compensation of dislocation-induced acceptors in Ge by sputtering from n-doped targets is proposed.

  5. Dependence of plasma characteristics on dc magnetron sputter parameters

    International Nuclear Information System (INIS)

    Wu, S.Z.

    2005-01-01

    Plasma discharge characteristics of a dc magnetron system were measured by a single Langmuir probe at the center axis of the dual-side process chamber. Plasma potential, floating potential, electron and ion densities, and electron temperature were extracted with varying dc power and gas pressure during sputter deposition of a metal target; strong correlations were shown between these plasma parameters and the sputter parameters. The electron density was controlled mostly by secondary electron generation in constant power mode, while plasma potential reflects the confinement space variation due to change of discharge voltage. When discharge pressure was varied, plasma density increases with the increased amount of free stock molecules, while electron temperature inversely decreased, due to energy-loss collision events. In low-pressure discharges, the electron energy distribution function measurements show more distinctive bi-Maxwellian distribution, with the fast electron temperature gradually decreases with increased gas pressure

  6. Crystalline silicon films grown by pulsed dc magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Reinig, Peter; Fenske, Frank; Fuhs, Walther; Selle, Burkhardt [Hahn-Meitner-Institut Berlin, Abt. Silizium-Photovoltaik, Kekulestr. 5, D-12489 Berlin (Germany)

    2002-04-01

    Pulsed dc magnetron sputtering is used as a novel method for the deposition of crystalline silicon films on glass substrates. Hydrogen-free polycrystalline Si-films are deposited with high deposition rates at temperatures of 400-450 C and pulse frequencies f in the range 0-250 kHz. Strong preferential (100) orientation of the crystallites is observed with increasing f. High frequency and similarly high negative substrate bias cause an increase of the Ar content and an enhancement of structural disorder. Measurements of the transient floating potential suggest that the observed structural effects are related to bombardment of the growing film by Ar{sup +} ions of high energy.

  7. CrN thin films prepared by reactive DC magnetron sputtering for symmetric supercapacitors

    KAUST Repository

    Wei, Binbin; Liang, Hanfeng; Zhang, Dongfang; Wu, Zhengtao; Qi, Zhengbing; Wang, Zhoucheng

    2016-01-01

    stability are promising candidates as supercapacitor electrode materials. In this work, we report the fabrication of CrN thin films using reactive DC magnetron sputtering and further their applications for symmetric supercapacitors for the first time. The Cr

  8. DC Magnetron Sputtered IZTO Thin Films for Organic Photovoltaic Application.

    Science.gov (United States)

    Lee, Hye Ji; Noviyana, Imas; Putri, Maryane; Koo, Chang Young; Lee, Jung-A; Kim, Jeong-Joo; Jeong, Youngjun; Lee, Youngu; Lee, Hee Young

    2018-02-01

    IZTO20 (In0.6Zn0.2Sn0.2O1.5) ceramic target was prepared from oxide mixture of In2O3, ZnO, and SnO2 powders. IZTO20 thin films were then deposited onto glass substrate at 400 °C by DC magnetron sputtering. The average optical transmittance determined by ultraviolet-visible spectroscopy was higher than 85% for all films. The minimum resistivity of the annealed IZTO20 thin film was approximately 6.1×10-4 Ω·cm, which tended to increase with decreasing indium content. Substrate heating and annealing were found to be important parameters affecting the electrical and optical properties. An organic photovoltaic (OPV) cell was fabricated using the IZTO20 film deposited under the optimized condition as an anode electrode and the efficiency of up to 80% compared to that of a similar OPV cell using ITO film was observed. Reduction of surface roughness and electrical resistivity through annealing treatment was found to contribute to the improved efficiency of the OPV cell.

  9. Deposition of Al/Cu Multilayer By Double Targets Cylindrical DC Magnetron Sputtering System

    Directory of Open Access Journals (Sweden)

    P. Balashabadi

    2013-12-01

    Full Text Available A cylindrical direct current magnetron sputtering coater with two targets for deposition of multilayer thin films and cermet solar selective surfaces has been constructed. The substrate holder was able to rotate around the target for obtaining the uniform layer and separated multilayer phases. The Al/ Cu multilayer film was deposited on the glass substrate at the following conditions: Working gas = Pure argon, Working pressure = 1 Pa, Cathode current = 8 A and cathode voltage = -600 V .Microstructure of the film was investigated by X-Ray Diffraction and the scanning electron microscopy analyses. The elements profile was determined by glow discharge–optical emission spectroscopy analysis. During deposition, both targets with magnetron configuration were sputtered simultaneously by argon ions. A Plasma column on the targets surface was generated by a 290 G permanent magnet unit. Two DC power supply units with three phases input and maximum output of 12 A/1000V were used to deposit the multilayer thin films. A control phase system was used to adjust output voltage.

  10. Synthesis and characterization of DC magnetron sputtered ZnO thin films under high working pressures

    International Nuclear Information System (INIS)

    Hezam, M.; Tabet, N.; Mekki, A.

    2010-01-01

    ZnO thin films were deposited on glass substrates using direct current (dc) magnetron sputtering under high working pressures. A pure zinc target was used, and sputtering was carried out in an oxygen atmosphere. The working pressure was varied between 50 and 800 mTorr. XRD characterization showed that for a window of working pressures between 300 and 500 mTorr, the deposited films were polycrystalline, with strong preferential orientation of grains along the c-axis. The film deposited at 400 mTorr had the highest (002) peak with the largest estimated grain size. Outside this window, the crystallinity and c-orientation of grains are lost. The microstructure of the films was investigated by Atomic Force microscopy (AFM). Optical transparency of the films was about 85%. The films produced were highly resistive, which might provide new alternatives for the synthesis of ZnO thin films aimed for SAW devices.

  11. DC-Compensated Current Transformer.

    Science.gov (United States)

    Ripka, Pavel; Draxler, Karel; Styblíková, Renata

    2016-01-20

    Instrument current transformers (CTs) measure AC currents. The DC component in the measured current can saturate the transformer and cause gross error. We use fluxgate detection and digital feedback compensation of the DC flux to suppress the overall error to 0.15%. This concept can be used not only for high-end CTs with a nanocrystalline core, but it also works for low-cost CTs with FeSi cores. The method described here allows simultaneous measurements of the DC current component.

  12. A novel DC Magnetron sputtering facility for space research and synchrotron radiation optics

    DEFF Research Database (Denmark)

    Hussain, A.M.; Christensen, Finn Erland; Pareschi, G.

    1998-01-01

    A new DC magnetron sputtering facility has been build up at the Danish Space Research Institute (DSRI), specially designed to enable uniform coatings of large area curved optics, such as Wolter-I mirror optics used in space telescopes and curved optics used in synchrotron radiation facilities...

  13. High-current magnetron discharge with magnetic insulation of anode

    International Nuclear Information System (INIS)

    Bizyukov, A.A.; Sereda, K.N.; Sleptsov, V.V.

    2008-01-01

    In magnetron discharge at currents higher then critical which magnitude is in the range of 15...30 A the transition from glow discharge in transverse magnetic field to arc discharge occurs. In the present time the problem of arc blowout is solved at the expense of pulse and HF power supply applying. In this paper the alternative method of limiting current of magnetron discharge increasing at the expense of increasing of discharge gap resistance by means of additional anode layer transverse magnetic field and arc current interruption by sectioning of current collector of anode surface is carrying out

  14. A study of the transient plasma potential in a pulsed bi-polar dc magnetron discharge

    International Nuclear Information System (INIS)

    Bradley, J W; Karkari, S K; Vetushka, A

    2004-01-01

    The temporal evolution of the plasma potential, V p , in a pulsed dc magnetron plasma has been determined using the emissive probe technique. The discharge was operated in the 'asymmetric bi-polar' mode, in which the discharge voltage changes polarity during part of the pulse cycle. The probe measurements, with a time-resolution of 20 ns or better, were made along a line above the racetrack, normal to the plane of the cathode target, for a fixed frequency (100 kHz), duty cycle (50%), argon pressure (0.74 Pa) and discharge power (583 W). At all the measured positions, V p was found to respond to the large and rapid changes in the cathode voltage, V d , during the different phases of the pulse cycle, with V p always more positive than V d . At a typical substrate position (>80 mm from the target), V p remains a few volts above the most positive surface in the discharge at all times. In the 'on' phase of the pulse, the measurements show a significant axial electric field is generated in the plasma, with the plasma potential dropping by a total of about 30 V over a distance of 70 mm, from the bulk plasma to a position close to the beginning of the cathode fall. This is consistent with measurements made in the dc magnetron. During the stable 'reverse' phase of the discharge, for distances greater than 18 mm from the target, the axial electric field is found to collapse, with V p elevated uniformly to about 3 V above V d . Between the target and this field-free region an ion sheath forms, and the current flowing to the target is still an ion current in this 'reverse' period. During the initial 200 ns of the voltage 'overshoot' phase (between 'on' and 'reverse' phases), V d reached a potential of +290 V; however, close to the target, V p was found to attain a much higher value, namely +378 V. Along the line of measurement, the axial electric field reverses in direction in this phase, and an electron current of up to 9 A flows to the target. The spatial and temporal

  15. Investigation of photocatalytic activity of titanium dioxide deposited on metallic substrates by DC magnetron sputtering

    DEFF Research Database (Denmark)

    Daviðsdóttir, Svava; Canulescu, Stela; Dirscherl, Kai

    2013-01-01

    The photocatalytic properties of titanium dioxide (TiO2) coating in the anatase crystalline structure deposited on aluminium AA1050 alloy and stainless steel S316L substrates were investigated. The coating was prepared by DC magnetron sputtering. The microstructure and surface morphology of the c......The photocatalytic properties of titanium dioxide (TiO2) coating in the anatase crystalline structure deposited on aluminium AA1050 alloy and stainless steel S316L substrates were investigated. The coating was prepared by DC magnetron sputtering. The microstructure and surface morphology...... sweep voltammetry, impedance measurements. The microstructure and surface morphology of the coating were similar irrespective of the nature of the substrate, while the photocatalytic behaviour was found to vary depending on the substrate type. In general the TiO2 coating on stainless steel was shown...

  16. High rate deposition of thin film cadmium sulphide by pulsed direct current magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Lisco, F., E-mail: F.Lisco@lboro.ac.uk [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire LE11 3TU (United Kingdom); Kaminski, P.M.; Abbas, A.; Bowers, J.W.; Claudio, G. [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire LE11 3TU (United Kingdom); Losurdo, M. [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR, via Orabona 4, 70126 Bari (Italy); Walls, J.M. [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire LE11 3TU (United Kingdom)

    2015-01-01

    Cadmium Sulphide (CdS) is an important n-type semiconductor widely used as a window layer in thin film photovoltaics Copper Indium Selenide, Copper Indium Gallium (di)Selenide, Copper Zinc Tin Sulphide and Cadmium Telluride (CdTe). Cadmium Sulphide has been deposited using a number of techniques but these techniques can be slow (chemical bath deposition and Radio Frequency sputtering) or the uniformity and the control of thickness can be relatively difficult (close space sublimation). In this paper we report on the development of a process using pulsed Direct Current magnetron sputtering which allows nanometre control of thin film thickness using time only. The CdS thin films deposited in this process are highly uniform and smooth. They exhibit the preferred hexagonal structure at room temperature deposition and they have excellent optical properties. Importantly, the process is highly stable despite the use of a semi-insulating magnetron target. Moreover, the process is very fast. The deposition rate using 1.5 kW of power to a 6-inch circular magnetron was measured to be greater than 8 nm/s. This makes the process suitable for industrial deployment. - Highlights: • Pulsed DC magnetron sputtering of CdS • High deposition rate deposition • Uniform, pinhole free films.

  17. High rate deposition of thin film cadmium sulphide by pulsed direct current magnetron sputtering

    International Nuclear Information System (INIS)

    Lisco, F.; Kaminski, P.M.; Abbas, A.; Bowers, J.W.; Claudio, G.; Losurdo, M.; Walls, J.M.

    2015-01-01

    Cadmium Sulphide (CdS) is an important n-type semiconductor widely used as a window layer in thin film photovoltaics Copper Indium Selenide, Copper Indium Gallium (di)Selenide, Copper Zinc Tin Sulphide and Cadmium Telluride (CdTe). Cadmium Sulphide has been deposited using a number of techniques but these techniques can be slow (chemical bath deposition and Radio Frequency sputtering) or the uniformity and the control of thickness can be relatively difficult (close space sublimation). In this paper we report on the development of a process using pulsed Direct Current magnetron sputtering which allows nanometre control of thin film thickness using time only. The CdS thin films deposited in this process are highly uniform and smooth. They exhibit the preferred hexagonal structure at room temperature deposition and they have excellent optical properties. Importantly, the process is highly stable despite the use of a semi-insulating magnetron target. Moreover, the process is very fast. The deposition rate using 1.5 kW of power to a 6-inch circular magnetron was measured to be greater than 8 nm/s. This makes the process suitable for industrial deployment. - Highlights: • Pulsed DC magnetron sputtering of CdS • High deposition rate deposition • Uniform, pinhole free films

  18. Superhydrophobic photocatalytic PTFE – Titania coatings deposited by reactive pDC magnetron sputtering from a blended powder target

    Energy Technology Data Exchange (ETDEWEB)

    Ratova, Marina, E-mail: marina_ratova@hotmail.com; Kelly, Peter J.; West, Glen T.

    2017-04-01

    The production of photocatalytic coatings with superhydrophobic properties, as opposed to the conventional hydrophilic properties, is desirable for the prevention of adhesion of contaminants to photocatalytic surfaces with subsequent deterioration of photocatalytic properties. In this work polytetrafluoroethylene (PTFE) – TiO{sub 2} composite thin films were deposited using a novel method of reactive pulsed direct current (pDC) magnetron sputtering of a blended PTFE – titanium oxide powder target. The surface characteristics and photocatalytic properties of the deposited composite coatings were studied. The as-deposited coatings were annealed at 523 K in air and analysed with Raman spectroscopy, optical profilometry and scanning electron microscopy. Hydrophobicity was assessed though measurements of water contact angles, and photocatalytic properties were studied via methylene blue dye degradation under UV irradiation. It was found that variations of gas flow and, hence, process pressures allowed deposition of samples combining superhydrophobicity with stable photocatalytic efficiency under UV light irradiation. Reversible wettability behaviour was observed with the alternation of light-dark cycles. - Highlights: • PTFE-TiO{sub 2} coatings were deposited by pDC reactive magnetron sputtering. • Blended powder target was used for coatings deposition. • Deposited coatings combined superhydrophobic and photocatalytic properties. • Under UV irradiation coatings exhibited reversible wettability.

  19. DC Magnetron sputtering of Y-Ba-Cu-O thin films

    International Nuclear Information System (INIS)

    Larsson, Gunnar.

    1990-01-01

    I have been studying dc magnetron sputtering of thin film YBa 2 Cu 3 O 6+x , one of the recently discovered high- temperatures superconductors. In the introduction a brief review of the subjects sputtering and superconductivity is given. Since partial pressure measurements, especially for oxygen, have been important in the work I include a short description of the operating principles of mass spectroscopy. Experimental results in addition to what is given in the papers concerning plasma are presented in an appendix at the end of the introduction. (au)

  20. Microstructural variation in titanium oxide thin films deposited by DC magnetron sputtering

    International Nuclear Information System (INIS)

    Pandian, Ramanathaswamy; Natarajan, Gomathi; Kamruddin, M.; Tyagi, A.K.

    2013-01-01

    We report on the microstructural evolution of titanium oxide thin films deposited by reactive DC magnetron sputtering using titanium metal target. By varying the ratio of sputter-gas mixture containing argon, oxygen and nitrogen various phases of titanium oxide, almost pure rutile, rutile-rich and anatase-rich nano-crystalline, were deposited on Si substrates at room temperature. Using high-resolution scanning electron microscopy, X-ray diffraction and micro-Raman techniques the microstructure of the films were revealed. The relationship between the microstructure of the films and the oxygen partial pressure during sputtering is discussed

  1. Superconducting dc fault current limiter

    International Nuclear Information System (INIS)

    Cointe, Y.

    2007-12-01

    Within the framework of the electric power market liberalization, DC networks have many interests compared to alternative ones, but their protections need to use new systems. Superconducting fault current limiters enable by an overstepping of the critical current to limit the fault current to a preset value, lower than the theoretical short-circuit current. For these applications, coated conductors offer excellent opportunities. We worked on the implementation of these materials and built a test bench. We carried out limiting experiments to estimate the quench homogeneity at various short-circuit parameters. An important point is the temperature measurement by deposited sensors on the ribbon, results are in good correlation with the theoretical models. Improved quench behaviours for temperatures close to the critical temperature have been confirmed. Our results enable to better understand the limitation mechanisms of coated conductors. (author)

  2. A Current-Fed Isolated Bidirectional DC-DC Converter

    DEFF Research Database (Denmark)

    Sun, Xiaofeng; Wu, Xiaoying; Shen, Yanfeng

    2017-01-01

    This paper proposes a current-fed isolated bidirectional DC-DC converter (CF-IBDC) which has the advantages of wide input voltage range, low input current ripple, low conduction losses, and soft switching over the full operating range. Compared with conventional CF-IBDCs, the voltage spikes...

  3. Rotating dust ring in an RF discharge coupled with a dc-magnetron sputter source. Experiment and simulation

    International Nuclear Information System (INIS)

    Matyash, K; Froehlich, M; Kersten, H; Thieme, G; Schneider, R; Hannemann, M; Hippler, R

    2004-01-01

    During an experiment involving coating of dust grains trapped in an RF discharge using a sputtering dc-magnetron source, a rotating dust ring was observed and investigated. After the magnetron was switched on, the dust cloud levitating above the RF electrode formed a ring rotating as a rigid body. Langmuir probe diagnostics were used for the measurement of plasma density and potential. It was discovered that the coupling of the dc-magnetron source to the RF discharge causes steep radial gradients in electron density and plasma potential. The rotation of the dust ring is attributed to the azimuthal component of the ion drag force, which appears due to the azimuthal drift of the ions caused by crossed radial electric and axial magnetic fields. In order to get more insight into the mechanism of dust ring rotation, a Particle-in-Cell simulation of a rotating dust cloud was performed. The results of the experiment and simulation are presented and discussed

  4. Rotating dust ring in an RF discharge coupled with a dc-magnetron sputter source. Experiment and simulation

    Energy Technology Data Exchange (ETDEWEB)

    Matyash, K [Institut fuer Niedertemperaturplasmaphysik Greifswald, Fr.-L.-Jahn-Strasse 19, 17489 Greifswald (Germany); Froehlich, M [Institut fuer Physik, Ernst-Moritz-Arndt-Universitaet Greifswald, Domstrasse 10a, 17487 Greifswald (Germany); Kersten, H [Institut fuer Niedertemperaturplasmaphysik Greifswald, Fr.-L.-Jahn-Strasse 19, 17489 Greifswald (Germany); Thieme, G [Institut fuer Physik, Ernst-Moritz-Arndt-Universitaet Greifswald, Domstrasse 10a, 17487 Greifswald (Germany); Schneider, R [Max-Planck-Institut fuer Plasmaphysik, Teilinstitut Greifswald, Wendelsteinstrasse 1, 17489 Greifswald (Germany); Hannemann, M [Institut fuer Niedertemperaturplasmaphysik Greifswald, Fr.-L.-Jahn-Strasse 19, 17489 Greifswald (Germany); Hippler, R [Institut fuer Physik, Ernst-Moritz-Arndt-Universitaet Greifswald, Domstrasse 10a, 17487 Greifswald (Germany)

    2004-10-07

    During an experiment involving coating of dust grains trapped in an RF discharge using a sputtering dc-magnetron source, a rotating dust ring was observed and investigated. After the magnetron was switched on, the dust cloud levitating above the RF electrode formed a ring rotating as a rigid body. Langmuir probe diagnostics were used for the measurement of plasma density and potential. It was discovered that the coupling of the dc-magnetron source to the RF discharge causes steep radial gradients in electron density and plasma potential. The rotation of the dust ring is attributed to the azimuthal component of the ion drag force, which appears due to the azimuthal drift of the ions caused by crossed radial electric and axial magnetic fields. In order to get more insight into the mechanism of dust ring rotation, a Particle-in-Cell simulation of a rotating dust cloud was performed. The results of the experiment and simulation are presented and discussed.

  5. Aluminum oxide films deposited in low pressure conditions by reactive pulsed dc magnetron sputtering

    CERN Document Server

    Seino, T

    2002-01-01

    The reactive pulsed dc sputtering technique is widely used for the deposition of oxide films. The operating pressure for sputtering is commonly above 0.13 Pa. In this study, however, aluminum oxide (alumina) films were deposited at operating pressures from 0.06 to 0.4 Pa using a sputtering system equipped with a scanning magnetron cathode and a pulsed dc power supply. The pulsed dc power was found to be useful not only to reduce arcing, but also to sustain the discharge at low pressure. The electrical breakdown field, intrinsic stress, O/Al ratio, refractive index, and surface roughness were investigated. Both a low intrinsic stress and an O/Al ratio around the stoichiometry were required to get the film having a high breakdown field. A low operating pressure of 0.1 Pa was found to provide the necessary stress and O/Al ratio targets. A 50-nm-thick alumina film having a maximum breakdown field of 7.4 MV/cm was obtained.

  6. Effects of Annealing on TiN Thin Film Growth by DC Magnetron Sputtering

    Directory of Open Access Journals (Sweden)

    Azadeh Jafari

    2014-07-01

    Full Text Available We have reviewed the deposition of titanium nitride (TiN thin films on stainless steel substrates by a DC magnetron sputtering method and annealing at different annealing temperatures of 500, 600, and 700°C for 120 min in nitrogen/argon atmospheres. Effects of annealing temperatures on the structural and the optical properties of TiN films were investigated using X-ray diffraction (XRD, atomic force microscope (AFM, field emission scanning electron microscopy (FESEM, and UV-VIS spectrophotometer. Our experimental studies reveal that the annealing temperature appreciably affected the structures, crystallite sizes, and reflection of the films. By increasing the annealing temperature to 700°C crystallinity and reflection of the film increase. These results suggest that annealed TiN films can be good candidate for tokamak first wall due to their structural and optical properties.

  7. Substantial difference in target surface chemistry between reactive dc and high power impulse magnetron sputtering

    Science.gov (United States)

    Greczynski, G.; Mráz, S.; Schneider, J. M.; Hultman, L.

    2018-02-01

    The nitride layer formed in the target race track during the deposition of stoichiometric TiN thin films is a factor 2.5 thicker for high power impulse magnetron sputtering (HIPIMS), compared to conventional dc processing (DCMS). The phenomenon is explained using x-ray photoelectron spectroscopy analysis of the as-operated Ti target surface chemistry supported by sputter depth profiles, dynamic Monte Carlo simulations employing the TRIDYN code, and plasma chemical investigations by ion mass spectrometry. The target chemistry and the thickness of the nitride layer are found to be determined by the implantation of nitrogen ions, predominantly N+ and N2+ for HIPIMS and DCMS, respectively. Knowledge of this method-inherent difference enables robust processing of high quality functional coatings.

  8. Synthesis and characterization of DC magnetron sputtered nano structured molybdenum thin films

    Energy Technology Data Exchange (ETDEWEB)

    Rondiya, S. R.; Rokade, A. V.; Jadhavar, A. A.; Pandharkar, S. M.; Kulkarni, R. R.; Karpe, S. D.; Diwate, K. D. [School of Energy Studies, Savitribai Phule Pune University, Pune 411007 (India); Jadkar, S. R., E-mail: sandesh@physics.unipune.ac.in [Department of Physics, Savitribai Phule Pune University, Pune 411007 (India)

    2016-04-13

    Molybdenum (Mo) thin films were deposited on corning glass (#7059) substrates using DC magnetron sputtering system. The effect of substrate temperature on the structural, morphology and topological properties have been investigated. Films were characterized by variety of techniques such as low angle x-ray diffraction (low angle XRD), field emission scanning electron microscopy (FE-SEM), atomic force microscopy (AFM). The low angle XRD analysis revealed that the synthesized Mo films are nanocrystalline having cubic crystal structure with (110) preferential orientation. The microstructure of the deposited Mo thin films observed with FE-SEM images indicated that films are homogeneous and uniform with randomly oriented leaf shape morphology. The AFM analysis shows that with increase in substrate temperature the rms roughness of Mo films increases. The obtained results suggest that the synthesized nanostructured Mo thin films have potential application as a back contact material for high efficiency solar cells like CdTe, CIGS, CZTS etc.

  9. AlN/Al dual protective coatings on NdFeB by DC magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Li Jinlong; Mao Shoudong; Sun Kefei [Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); Li Xiaomin [Shanghai Institute of Ceramics Chinese Academy of Sciences, Shanghai 200050 (China); Song Zhenlun [Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China)], E-mail: songzhenlun@nimte.ac.cn

    2009-11-15

    AlN/Al dual protective coatings were prepared on NdFeB by DC magnetron sputtering in a home-made industrial apparatus. Comparing with Al coating, AlN/Al coatings have a denser structure of an outmost AlN amorphous layer following an inner Al columnar crystal layer. The coatings and NdFeB substrate combine well, and moreover, there is occurrence of metallurgy bonding in the interface layer. Both Al and AlN/Al coatings have a good protective ability to NdFeB. Especially, the corrosion resistance of AlN/Al coated NdFeB is improved largely. AlN/Al and Al protective coatings not only do not deteriorate the magnetic properties of NdFeB, but contribute to their slight increase.

  10. AlN/Al dual protective coatings on NdFeB by DC magnetron sputtering

    International Nuclear Information System (INIS)

    Li Jinlong; Mao Shoudong; Sun Kefei; Li Xiaomin; Song Zhenlun

    2009-01-01

    AlN/Al dual protective coatings were prepared on NdFeB by DC magnetron sputtering in a home-made industrial apparatus. Comparing with Al coating, AlN/Al coatings have a denser structure of an outmost AlN amorphous layer following an inner Al columnar crystal layer. The coatings and NdFeB substrate combine well, and moreover, there is occurrence of metallurgy bonding in the interface layer. Both Al and AlN/Al coatings have a good protective ability to NdFeB. Especially, the corrosion resistance of AlN/Al coated NdFeB is improved largely. AlN/Al and Al protective coatings not only do not deteriorate the magnetic properties of NdFeB, but contribute to their slight increase.

  11. Operational limit of a planar DC magnetron cluster source due to target erosion

    International Nuclear Information System (INIS)

    Rai, A.; Mutzke, A.; Bandelow, G.; Schneider, R.; Ganeva, M.; Pipa, A.V.; Hippler, R.

    2013-01-01

    The binary collision-based two dimensional SDTrimSP-2D model has been used to simulate the erosion process of a Cu target and its influence on the operational limit of a planar DC magnetron nanocluster source. The density of free metal atoms in the aggregation region influences the cluster formation and cluster intensity during the target lifetime. The density of the free metal atoms in the aggregation region can only be predicted by taking into account (i) the angular distribution of the sputtered flux from the primary target source and (ii) relative downwards shift of the primary source of sputtered atoms during the erosion process. It is shown that the flux of the sputtered atoms smoothly decreases with the target erosion

  12. DC magnetron sputtering prepared Ag-C thin film anode for thin film lithium ion microbatteries

    International Nuclear Information System (INIS)

    Li, Y.; Tu, J.P.; Shi, D.Q.; Huang, X.H.; Wu, H.M.; Yuan, Y.F.; Zhao, X.B.

    2007-01-01

    An Ag-C thin film was prepared by DC magnetron co-sputtering, using pure silver and graphite as the targets. The microstructure and morphology of the deposited thin film were characterized by X-ray diffraction (XRD) and transmission electron microscopy (TEM). Electrochemical performances of the Ag-C thin film anode were investigated by means of discharge/charge and cyclic voltammogram (CV) tests in model cells. The electrochemical impedance spectrum (EIS) characteristics and the chemical diffusion coefficient, D Li of the Ag-C thin film electrode at different discharging states were discussed. It was believed that the excellent cycling performance of the Ag-C electrode was ascribed to the good conductivity of silver and the volume stability of the thin film

  13. Effect of sputtering power on structure and properties of Bi film deposited by DC magnetron sputtering

    International Nuclear Information System (INIS)

    Liao Guo; He Zhibing; Xu Hua; Li Jun; Chen Taihua; Chen Jiajun

    2012-01-01

    Bi film was fabricated at different sputtering powers by DC magnetron sputtering. The deposition rate of Bi film as the function of sputtering power was studied. The surface topography of Bi film was observed by SEM, and the growth mode of Bi film was investigated. The crystal structure was analyzed by XRD. The grain size and stress of Bi film were calculated. The SEM images show that all the films are columnar growth. The average grain size firstly increases as the sputtering power increases, then decreases at 60 W. The film becomes loose with the increase of sputtering power, while, the film gets compact when the sputtering power becomes from 45 to 60 W. The XRD results show that films are polycrystalline of hexagonal. And the stress transforms from the tensile stress to compressive stress as the sputtering power increases. (authors)

  14. A study of the plasma electronegativity in an argon-oxygen pulsed-dc sputter magnetron

    International Nuclear Information System (INIS)

    You, S D; Dodd, R; Edwards, A; Bradley, J W

    2010-01-01

    Using Langmuir probe-assisted laser photodetachment, the temporal evolution of the O - density was determined in the bulk plasma of a unipolar pulsed-dc magnetron. The source was operated in reactive mode, at a fixed nominal on-time power of 100 W, sputtering Ti in argon-oxygen atmospheres at 1.3 Pa pressure, but over a variation of duty cycles from 5% to 50% and oxygen partial pressures of 10% and 50% of the total pressure. In the plasma on-time, for all duty cycles the negative ion density (n - ) rises marginally reaching values typically less than 2 x 10 15 m -3 with negative ion-to-electron density ratios, α - falls by about 20-30% as fast O - species created at the cathode exit the system. This is followed by a rapid rise in n - to values at least 2 or 3 times that in the on-time. The rate of rise of n - and its maximum value both increase with decreasing duty cycle. In the off-time, the electron density falls rapidly (initial decay rates of several tens of μs), and therefore the afterglow plasma becomes highly electronegative, with α reaching 4.6 and 14.4 for 10% and 50% oxygen partial pressure, respectively. The rapid rise in n - in the afterglow (in which the electron temperature falls from about 5 to 0.5 eV) is attributed to the dissociative attachment of highly excited oxygen metastables, which themselves are created in the pulse on-time. At the lowest duty of 5%, the long-term O - decay times are several hundred μs. Langmuir probe characteristics show the clear signature that negative ions dominate over the electrons in the off-time. From the ion and electron saturation current ratios, α has been estimated in some chosen cases and found to agree within a factor between 2 and 10 with those obtained more directly from the photodetachment method.

  15. Bioactivity response of Ta_1_-_xO_x coatings deposited by reactive DC magnetron sputtering

    International Nuclear Information System (INIS)

    Almeida Alves, C.F.; Cavaleiro, A.; Carvalho, S.

    2016-01-01

    The use of dental implants is sometimes accompanied by failure due to periimplantitis disease and subsequently poor esthetics when soft–hard tissue margin recedes. As a consequence, further research is needed for developing new bioactive surfaces able to enhance the osseous growth. Tantalum (Ta) is a promising material for dental implants since, comparing with titanium (Ti), it is bioactive and has an interesting chemistry which promotes the osseointegration. Another promising approach for implantology is the development of implants with oxidized surfaces since bone progenitor cells interact with the oxide layer forming a diffusion zone due to its ability to bind with calcium which promotes a stronger bond. In the present report Ta-based coatings were deposited by reactive DC magnetron sputtering onto Ti CP substrates in an Ar + O_2 atmosphere. In order to assess the osteoconductive response of the studied materials, contact angle and in vitro tests of the samples immersed in Simulated Body Fluid (SBF) were performed. Structural results showed that oxide phases where achieved with larger amounts of oxygen (70 at.% O). More compact and smooth coatings were deposited by increasing the oxygen content. The as-deposited Ta coating presented the most hydrophobic character (100°); with increasing oxygen amount contact angles progressively diminished, down to the lowest measured value, 63°. The higher wettability is also accompanied by an increase on the surface energy. Bioactivity tests demonstrated that highest O-content coating, in good agreement with wettability and surface energy values, showed an increased affinity for apatite adhesion, with higher Ca/P ratio formation, when compared to the bare Ti substrates. - Highlights: • Ta_1_-_xO_x coatings were deposited by reactive DC magnetron sputtering. • Amorphous oxide phases were achieved with higher oxygen amounts. • Contact angles progressively diminished, with increasing oxygen content. • Ta oxide surface

  16. Dielectric properties of DC reactive magnetron sputtered Al2O3 thin films

    International Nuclear Information System (INIS)

    Prasanna, S.; Mohan Rao, G.; Jayakumar, S.; Kannan, M.D.; Ganesan, V.

    2012-01-01

    Alumina (Al 2 O 3 ) thin films were sputter deposited over well-cleaned glass and Si substrates by DC reactive magnetron sputtering under various oxygen gas pressures and sputtering powers. The composition of the films was analyzed by X-ray photoelectron spectroscopy and an optimal O/Al atomic ratio of 1.59 was obtained at a reactive gas pressure of 0.03 Pa and sputtering power of 70 W. X-ray diffraction results revealed that the films were amorphous until 550 °C. The surface morphology of the films was studied using scanning electron microscopy and the as-deposited films were found to be smooth. The topography of the as-deposited and annealed films was analyzed by atomic force microscopy and a progressive increase in the rms roughness of the films from 3.2 nm to 4.53 nm was also observed with increase in the annealing temperature. Al-Al 2 O 3 -Al thin film capacitors were then fabricated on glass substrates to study the effect of temperature and frequency on the dielectric property of the films. Temperature coefficient of capacitance, AC conductivity and activation energy were determined and the results are discussed. - Highlights: ► Al 2 O 3 thin films were deposited by DC reactive magnetron sputtering. ► The films were found to be amorphous up to annealing temperature of 550 C. ► An increase in rms roughness of the films was observed with annealing. ► Al-Al 2 O 3 -Al thin film capacitors were fabricated and dielectric constant was 7.5. ► The activation energy decreased with increase in frequency.

  17. Experimental investigation of plasma dynamics in dc and short-pulse magnetron discharges

    International Nuclear Information System (INIS)

    Seo, Sang-Hun; In, Jung-Hwan; Chang, Hong-Young

    2006-01-01

    The spatiotemporal evolution of the electron energy distribution function (EEDF) and of plasma parameters such as the electron density, the electron temperature and the plasma and floating potentials has been investigated using spatially and temporally resolved single Langmuir probe measurements in dc and mid-frequency, short-pulse magnetron discharges with a repetition frequency of 10 kHz and a duty cycle of 10%. In the pulsed discharge of the short duty cycle, a peak electron temperature higher than 10 eV was observed near the cathode fall region during the early phase of the pulse-on, which is about three times higher than the steady-state value of the electron temperature in the dc discharge. The temporal evolution of the measured EEDFs showed the initial efficient electron heating during the early phase of the pulse-on and the subsequent relaxation of electron energy by the inelastic collisions and the diffusive loss. The high-energy electrons generated during the pulse-on phase diffused the downstream region toward the grounded substrate, resulting in a bi-Maxwellian EEDF consisting of the background low-energy electrons and the high-energy electrons. The results of the spatially and temporally resolved probe measurements will be presented and the enhanced efficiency of the electron heating in the short-pulse discharge will be explained on the basis of the global model of a pulsed discharge

  18. Surface treatment effect on Si (111) substrate for carbon deposition using DC unbalanced magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Aji, A. S., E-mail: aji.ravazes70@gmail.com; Sahdan, M. F.; Hendra, I. B.; Dinari, P.; Darma, Y. [Quantum Semiconductor and Devices Lab., Physics of Material Electronics Research Division, Department of Physics, Institut Teknologi Bandung (Indonesia)

    2015-04-16

    In this work, we studied the effect of HF treatment in silicon (111) substrate surface for depositing thin layer carbon. We performed the deposition of carbon by using DC Unbalanced Magnetron Sputtering with carbon pallet (5% Fe) as target. From SEM characterization results it can be concluded that the carbon layer on HF treated substrate is more uniform than on substrate without treated. Carbon deposition rate is higher as confirmed by AFM results if the silicon substrate is treated by HF solution. EDAX characterization results tell that silicon (111) substrate with HF treatment have more carbon fraction than substrate without treatment. These results confirmed that HF treatment on silicon Si (111) substrates could enhance the carbon deposition by using DC sputtering. Afterward, the carbon atomic arrangement on silicon (111) surface is studied by performing thermal annealing process to 900 °C. From Raman spectroscopy results, thin film carbon is not changing until 600 °C thermal budged. But, when temperature increase to 900 °C, thin film carbon is starting to diffuse to silicon (111) substrates.

  19. Influence of Continuous and Discontinuous Depositions on Properties of Ito Films Prepared by DC Magnetron Sputtering

    Science.gov (United States)

    Aiempanakit, K.; Rakkwamsuk, P.; Dumrongrattana, S.

    Indium tin oxide (ITO) films were deposited on glass substrate without external heating by DC magnetron sputtering with continuous deposition of 800 s (S1) and discontinuous depositions of 400 s × 2 times (S2), 200 s × 4 times (S3) and 100 s × 8 times (S4). The structural, surface morphology, optical transmittance and electrical resistivity of ITO films were measured by X-ray diffraction, atomic force microscope, spectrophotometer and four-point probe, respectively. The deposition process of the S1 condition shows the highest target voltage due to more target poisoning occurrence. The substrate temperature of the S1 condition increases with the saturation curve of the RC charging circuit while other conditions increase and decrease due to deposition steps as DC power turns on and off. Target voltage and substrate temperature of ITO films decrease when changing the deposition conditions from S1 to S2, S3 and S4, respectively. The preferential orientation of ITO films were changed from dominate (222) plane to (400) plane with the increasing number of deposition steps. The ITO film for the S4 condition shows the lowest electrical resistivity of 1.44 × 10-3 Ω·cm with the highest energy gap of 4.09 eV and the highest surface roughness of 3.43 nm. These results were discussed from the point of different oxygen occurring on the surface ITO target between the sputtering processes which affected the properties of ITO films.

  20. DC-Compensated Current Transformer †

    Science.gov (United States)

    Ripka, Pavel; Draxler, Karel; Styblíková, Renata

    2016-01-01

    Instrument current transformers (CTs) measure AC currents. The DC component in the measured current can saturate the transformer and cause gross error. We use fluxgate detection and digital feedback compensation of the DC flux to suppress the overall error to 0.15%. This concept can be used not only for high-end CTs with a nanocrystalline core, but it also works for low-cost CTs with FeSi cores. The method described here allows simultaneous measurements of the DC current component. PMID:26805830

  1. Effects of nitrogen ion implantation time on tungsten films deposited by DC magnetron sputtering on AISI 410 martensitic stainless steel

    Energy Technology Data Exchange (ETDEWEB)

    Malau, Viktor, E-mail: malau@ugm.ac.id; Ilman, Mochammad Noer, E-mail: noer-ilman@yahoo.com; Iswanto, Priyo Tri, E-mail: priyatri@yahoo.com; Jatisukamto, Gaguk, E-mail: gagukjtsk@yahoo.co.id [Mechanical and Industrial Engineering Department, Gadjah Mada University Jl. Grafika 2, Yogyakarta, 55281 (Indonesia)

    2016-03-29

    Nitrogen ion implantation time on tungsten thin film deposited on surface of AISI 410 steel has been performed. Tungsten thin film produced by dc magnetron sputtering method was deposited on AISI 410 martensitic stainless steel substrates, and then the nitrogen ions were implanted on tungsten thin film. The objective of this research is to investigate the effects of implantation deposition time on surface roughness, microhardness, specific wear and corrosion rate of nitrogen implanted on tungsten film. Magnetron sputtering process was performed by using plasma gas of argon (Ar) to bombardier tungsten target (W) in a vacuum chamber with a pressure of 7.6 x 10{sup −2} torr, a voltage of 300 V, a sputter current of 80 mA for sputtered time of 10 minutes. Nitrogen implantation on tungsten film was done with an initial pressure of 3x10{sup −6} mbar, a fluence of 2 x 10{sup 17} ions/cm{sup 2}, an energy of 100 keV and implantation deposition times of 0, 20, 30 and 40 minutes. The surface roughness, microhardness, specific wear and corrosion rate of the films were evaluated by surfcorder test, Vickers microhardness test, wear test and potentiostat (galvanostat) test respectively. The results show that the nitrogen ions implanted deposition time on tungsten film can modify the surface roughness, microhardness, specific wear and corrosion rate. The minimum surface roughness, specific wear and corrosion rate can be obtained for implantation time of 20 minutes and the maximum microhardness of the film is 329 VHN (Vickers Hardness Number) for implantation time of 30 minutes. The specific wear and corrosion rate of the film depend directly on the surface roughness.

  2. Decorative black TiCxOy film fabricated by DC magnetron sputtering without importing oxygen reactive gas

    Science.gov (United States)

    Ono, Katsushi; Wakabayashi, Masao; Tsukakoshi, Yukio; Abe, Yoshiyuki

    2016-02-01

    Decorative black TiCxOy films were fabricated by dc (direct current) magnetron sputtering without importing the oxygen reactive gas into the sputtering chamber. Using a ceramic target of titanium oxycarbide (TiC1.59O0.31), the oxygen content in the films could be easily controlled by adjustment of total sputtering gas pressure without remarkable change of the carbon content. The films deposited at 2.0 and 4.0 Pa, those are higher pressure when compared with that in conventional magnetron sputtering, showed an attractive black color. In particular, the film at 4.0 Pa had the composition of TiC1.03O1.10, exhibited the L* of 41.5, a* of 0.2 and b* of 0.6 in CIELAB color space. These values were smaller than those in the TiC0.29O1.38 films (L* of 45.8, a* of 1.2 and b* of 1.2) fabricated by conventional reactive sputtering method from the same target under the conditions of gas pressure of 0.3 Pa and optimized oxygen reactive gas concentration of 2.5 vol.% in sputtering gas. Analysis of XRD and XPS revealed that the black film deposited at 4.0 Pa was the amorphous film composed of TiC, TiO and C. The adhesion property and the heat resisting property were enough for decorative uses. This sputtering process has an industrial advantage that the decorative black coating with color uniformity in large area can be easily obtained by plain operation because of unnecessary of the oxygen reactive gas importing which is difficult to be controlled uniformly in the sputtering chamber.

  3. Direct current magnetron sputter-deposited ZnO thin films

    International Nuclear Information System (INIS)

    Hoon, Jian-Wei; Chan, Kah-Yoong; Krishnasamy, Jegenathan; Tou, Teck-Yong; Knipp, Dietmar

    2011-01-01

    Zinc oxide (ZnO) is a very promising electronic material for emerging transparent large-area electronic applications including thin-film sensors, transistors and solar cells. We fabricated ZnO thin films by employing direct current (DC) magnetron sputtering deposition technique. ZnO films with different thicknesses ranging from 150 nm to 750 nm were deposited on glass substrates. The deposition pressure and the substrate temperature were varied from 12 mTorr to 25 mTorr, and from room temperature to 450 deg. C, respectively. The influence of the film thickness, deposition pressure and the substrate temperature on structural and optical properties of the ZnO films was investigated using atomic force microscopy (AFM) and ultraviolet-visible (UV-Vis) spectrometer. The experimental results reveal that the film thickness, deposition pressure and the substrate temperature play significant role in the structural formation and the optical properties of the deposited ZnO thin films.

  4. Electrical resistivity of CuAlMo thin films grown at room temperature by dc magnetron sputtering

    OpenAIRE

    Birkett, Martin; Penlington, Roger

    2016-01-01

    We report on the thickness dependence of electrical resistivity of CuAlMo films grown by dc magnetron sputtering on glass substrates at room temperature. The electrical resistance of the films was monitored in situ during their growth in the thickness range 10–1000 nm. By theoretically modelling the evolution of resistivity during growth we were able to gain an insight into the dominant electrical conduction mechanisms with increasing film thickness. For thicknesses in the range 10–25 nm the ...

  5. Characterization of DC magnetron plasma in Ar/Kr/N2 mixture during deposition of (Cr,Al)N coating

    International Nuclear Information System (INIS)

    Bobzin, K; Bagcivan, N; Theiß, S; Brugnara, R; Bibinov, N; Awakowicz, P

    2017-01-01

    Reactive sputter deposition of (Cr,Al)N coatings in DC magnetron plasmas containing Ar/Kr/N 2 mixtures is characterized by applying a combination of voltage–current measurement, optical emission spectroscopy (OES) and numerical simulation. Theoretical and experimental methods supplement each other and their combination permits us to obtain the most reliable information about the processes by physical vapor deposition. Gas temperature ( T g ) and plasma parameters, namely electron density n e and electron temperature T e are determined by spatial resolved measurements of molecular nitrogen photoemission. Steady-state densities of Cr and Al atoms are measured using OES. The sputtering of Cr and Al atoms is simulated using the TRIDYN code, measured electric current and applied voltage. Transport of sputtered atoms through the plasma volume is simulated by adopting a Monte-Carlo code. In order to quantify the ‘poisoning’ of the target surface with nitrogen, simulated steady state densities of Al and Cr atoms at different states of poisoning and at different distances from the target are compared with the measured densities. In addition, simulated fluxes of Cr and Al atoms to the substrate are compared with the measured deposition rates of the (Cr,Al)N coating. (paper)

  6. Properties of Ce-doped ITO films deposited on polymer substrate by DC magnetron sputtering

    International Nuclear Information System (INIS)

    Kang, Y.M.; Kwon, S.H.; Choi, J.H.; Cho, Y.J.; Song, P.K.

    2010-01-01

    Ce-doped indium tin oxide (ITO:Ce) films were deposited on flexible polyimide substrates by DC magnetron sputtering using ITO targets containing various CeO 2 contents (CeO 2 : 0, 0.5, 3.0, 4.0, 6.0 wt.%) at room temperature and post-annealed at 200 o C. The crystallinity of the ITO films decreased with increasing Ce content, and it led to a decrease in surface roughness. In addition, a relatively small change in resistance in dynamic stress mode was obtained for ITO:Ce films even after the annealing at high temperature (200 o C). The minimum resistivity of the amorphous ITO:Ce films was 3.96 x 10 -4 Ωcm, which was deposited using a 3.0 wt.% CeO 2 doped ITO target. The amorphous ITO:Ce films not only have comparable electrical properties to the polycrystalline films but also have a crystallization temperature > 200 o C. In addition, the amorphous ITO:Ce film showed stable mechanical properties in the bended state.

  7. CrN thin films prepared by reactive DC magnetron sputtering for symmetric supercapacitors

    KAUST Repository

    Wei, Binbin

    2016-12-29

    Supercapacitors have been becoming indispensable energy storage devices in micro-electromechanical systems and have been widely studied over the past few decades. Transition metal nitrides with excellent electrical conductivity and superior cycling stability are promising candidates as supercapacitor electrode materials. In this work, we report the fabrication of CrN thin films using reactive DC magnetron sputtering and further their applications for symmetric supercapacitors for the first time. The CrN thin film electrodes fabricated under the deposition pressure of 3.5 Pa show an areal specific capacitance of 12.8 mF cm at 1.0 mA cm and high cycling stability with 92.1% capacitance retention after 20 000 cycles in a 0.5 M HSO electrolyte. Furthermore, our developed CrN//CrN symmetric supercapacitor can deliver a high energy density of 8.2 mW h cm at the power density of 0.7 W cm along with outstanding cycling stability. Thus, the CrN thin films have great potential for application in supercapacitors and other energy storage systems.

  8. Electrical and optical properties of reactive DC magnetron sputtered silver oxide thin films: role of oxygen

    Energy Technology Data Exchange (ETDEWEB)

    Kumar Barik, Ullash; Srinivasan, S; Nagendra, C L; Subrahmanyam, A

    2003-04-01

    Silver oxide thin films have been prepared on soda lime glass substrates at room temperature (300 K) by reactive DC Magnetron sputtering technique using pure silver metal target; the oxygen flow rates have been varied in the range 0.00-2.01 sccm. The X-ray diffraction data on these films show a systematic change from metallic silver to silver (sub) oxides. The electrical resistivity increases with increasing oxygen flow. The films show a p-type behavior (by both Hall and Seebeck measurements) for the oxygen flow rates of 0.54, 1.09 and 1.43 sccm. The refractive index of the films (at 632.8 nm) decreases with increasing oxygen content and is in the range 1.167-1.145, whereas the p-type films show a higher refractive index (1.186-1.204). The work function of these silver oxide films has been measured by Kelvin Probe technique. The results, in specific, the p-type conductivity in the silver oxide films, have been explained on the basis of the theory of partial ionic charge proposed by Sanderson.

  9. Electrical and optical properties of reactive DC magnetron sputtered silver oxide thin films: role of oxygen

    International Nuclear Information System (INIS)

    Kumar Barik, Ullash; Srinivasan, S.; Nagendra, C.L.; Subrahmanyam, A.

    2003-01-01

    Silver oxide thin films have been prepared on soda lime glass substrates at room temperature (300 K) by reactive DC Magnetron sputtering technique using pure silver metal target; the oxygen flow rates have been varied in the range 0.00-2.01 sccm. The X-ray diffraction data on these films show a systematic change from metallic silver to silver (sub) oxides. The electrical resistivity increases with increasing oxygen flow. The films show a p-type behavior (by both Hall and Seebeck measurements) for the oxygen flow rates of 0.54, 1.09 and 1.43 sccm. The refractive index of the films (at 632.8 nm) decreases with increasing oxygen content and is in the range 1.167-1.145, whereas the p-type films show a higher refractive index (1.186-1.204). The work function of these silver oxide films has been measured by Kelvin Probe technique. The results, in specific, the p-type conductivity in the silver oxide films, have been explained on the basis of the theory of partial ionic charge proposed by Sanderson

  10. Structure evolution of zinc oxide thin films deposited by unbalance DC magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Aryanto, Didik, E-mail: didi027@lipi.go.id [Research Center for Physics, Indonesian Institute of Sciences, Serpong 15314, Tangerang Selatan (Indonesia); Materials Research Group, Physics Department, Universitas Negeri Semarang, Gunungpati, Semarang 50229 Jawa Tengah (Indonesia); Marwoto, Putut; Sugianto [Physics Department, Faculty of Mathematics and Science, Universitas Negeri Semarang, Gunungpati, Semarang 50229 Jawa Tengah (Indonesia); Materials Research Group, Physics Department, Universitas Negeri Semarang, Gunungpati, Semarang 50229 Jawa Tengah (Indonesia); Sudiro, Toto [Research Center for Physics, Indonesian Institute of Sciences, Serpong 15314, Tangerang Selatan (Indonesia); Birowosuto, Muhammad D. [Research Center for Physics, Indonesian Institute of Sciences, Serpong 15314, Tangerang Selatan (Indonesia); CINTRA UMI CNRS/NTU/THALES 3288 Research Techno Plaza, 50 Nanyang Drive, Border X Block, level 6, 637553 (Singapore); Sulhadi [Physics Department, Faculty of Mathematics and Science, Universitas Negeri Semarang, Gunungpati, Semarang 50229 Jawa Tengah (Indonesia)

    2016-04-19

    Zinc oxide (ZnO) thin films are deposited on corning glass substrates using unbalanced DC magnetron sputtering. The effect of growth temperature on surface morphology and crystallographic orientation of ZnO thin film is studied using atomic force microscopy (AFM) and X-ray diffraction (XRD) techniques. The surface morphology and crystallographic orientation of ZnO thin film are transformed against the increasing of growth temperature. The mean grain size of film and the surface roughness are inversely and directly proportional towards the growth temperature from room temperature to 300 °C, respectively. The smaller grain size and finer roughness of ZnO thin film are obtained at growth temperature of 400 °C. The result of AFM analysis is in good agreement with the result of XRD analysis. ZnO thin films deposited in a series of growth temperatures have hexagonal wurtzite polycrystalline structures and they exhibit transformations in the crystallographic orientation. The results in this study reveal that the growth temperature strongly influences the surface morphology and crystallographic orientation of ZnO thin film.

  11. Structural and optical properties of DC reactive magnetron sputtered zinc aluminum oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, B. Rajesh, E-mail: rajphyind@gmail.com [Department of Physics, GITAM Institute of Technology, GITAM University, Visakhapatnam - 530 045, A.P. (India); Rao, T. Subba, E-mail: thotasubbarao6@gmail.com [Department of Physics, Sri Krishnadevaraya University, Anantapuramu - 515 003, A.P. (India)

    2014-10-15

    Highly transparent conductive Zinc Aluminum Oxide (ZAO) thin films have been deposited on glass substrates using DC reactive magnetron sputtering method. The thin films were deposited at 200 °C and post-deposition annealing from 15 to 90 min. XRD patterns of ZAO films exhibit only (0 0 2) diffraction peak, indicating that they have c-axis preferred orientation perpendicular to the substrate. Scanning electron microscopy (SEM) is used to study the surface morphology of the films. The grain size obtained from SEM images of ZAO thin films are found to be in the range of 20 - 26 nm. The minimum resistivity of 1.74 × 10{sup −4} Ω cm and an average transmittance of 92% are obtained for the thin film post annealed for 30 min. The optical band gap of ZAO thin films increased from 3.49 to 3.60 eV with the increase of annealing time due to Burstein-Moss effect. The optical constants refractive index (n) and extinction coefficient (k) were also determined from the optical transmission spectra.

  12. Corrosion resistance of CrN thin films produced by dc magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Ruden, A. [Laboratorio de Física del Plasma, Universidad Nacional de Colombia Sede Manizales, Km. 9 vía al Magdalena, Manizales (Colombia); Laboratorio de Recubrimientos Duros y Aplicaciones Industriales–RDAI, Universidad del Valle, Calle 13 N° 100-00 Ciudadela Meléndez, Cali (Colombia); Departamento de matemáticas, Universidad Tecnológica de Pereira, Pereira (Colombia); Restrepo-Parra, E., E-mail: erestrepopa@unal.edu.co [Laboratorio de Física del Plasma, Universidad Nacional de Colombia Sede Manizales, Km. 9 vía al Magdalena, Manizales (Colombia); Paladines, A.U.; Sequeda, F. [Laboratorio de Recubrimientos Duros y Aplicaciones Industriales–RDAI, Universidad del Valle, Calle 13 N° 100-00 Ciudadela Meléndez, Cali (Colombia)

    2013-04-01

    In this study, the electrochemical behavior of chromium nitride (CrN) coatings deposited on two steel substrates, AISI 304 and AISI 1440, was investigated. The CrN coatings were prepared using a reactive d.c. magnetron sputtering deposition technique at two different pressures (P1 = 0.4 Pa and P2 = 4 Pa) with a mixture of N{sub 2}–Ar (1.5-10). The microstructure and crystallinity of the CrN coatings were investigated using X-ray diffraction. The aqueous corrosion behavior of the coatings was evaluated using two methods. The polarization resistance (Tafel curves) and electrochemical impedance spectra (EIS) in a saline (3.5% NaCl solution) environment were measured in terms of the open-circuit potentials and polarization resistance (R{sub p}). The results indicated that the CrN coatings present better corrosion resistance and R{sub p} values than do the uncoated steel substrates, especially for the coatings produced on the AISI 304 substrates, which exhibited a strong enhancement in the corrosion resistance. Furthermore, better behavior was observed for the coatings produced at lower pressures (0.4 Pa) than those grown at 4 Pa.

  13. Study on helium-charged titanium films deposited by DC-magnetron sputtering

    International Nuclear Information System (INIS)

    Shi Liqun; Jin Qinhua; Liu Chaozhuo; Xu Shilin; Zhou Zhuying

    2005-01-01

    Helium trapping in the Ti films deposited by DC magnetron sputtering with a He/Ar mixture was studied. He atoms with a surprisingly high concentration (He/Ti atomic ratio is as high as 56%) incorporate evenly in deposited film. The trapped amount of He can be controlled by the helium partial amount. The introduction of the helium with no extra damage (or very low damage) can be realized by choosing suitable deposition conditions. It was also found that because of the formation of nanophase Ti film a relative high He flux for bubble formation is needed and the amount of the retaining He in sputtering Ti films is much higher than that in the coarse-grain Ti films. The nanophase Ti film can accommodate larger concentration of trapped sites to He, which results in a high density and small size of the He bubbles. With increasing He irradiation flux, the grain size of Ti film decreases and the lattice spacing and width of the X-ray diffraction peak increase due to the He introduction, and the film tends to amorphous phase. (authors)

  14. Room temperature growth of nanocrystalline anatase TiO2 thin films by dc magnetron sputtering

    International Nuclear Information System (INIS)

    Singh, Preetam; Kaur, Davinder

    2010-01-01

    We report, the structural and optical properties of nanocrystalline anatase TiO 2 thin films grown on glass substrate by dc magnetron sputtering at room temperature. The influence of sputtering power and pressure over crystallinity and surface morphology of the films were investigated. It was observed that increase in sputtering power activates the TiO 2 film growth from relative lower surface free energy to higher surface free energy. XRD pattern revealed the change in preferred orientation from (1 0 1) to (0 0 4) with increase in sputtering power, which is accounted for different surface energy associated with different planes. Microstructure of the films also changes from cauliflower type to columnar type structures with increase in sputtering power. FESEM images of films grown at low pressure and low sputtering power showed typical cauliflower like structure. The optical measurement revealed the systematic variation of the optical constants with deposition parameters. The films are highly transparent with transmission higher than 90% with sharp ultraviolet cut off. The transmittance of these films was found to be influenced by the surface roughness and film thickness. The optical band gap was found to decrease with increase in the sputtering power and pressure. The refractive index of the films was found to vary in the range of 2.50-2.24 with increase in sputtering pressure or sputtering power, resulting in the possibility of producing TiO 2 films for device applications with different refractive index, by changing the deposition parameters.

  15. Low friction coefficient coatings Ni-Cr by magnetron sputtering, DC

    Energy Technology Data Exchange (ETDEWEB)

    Morales-Hernandez, J.; Mandujano-Ruiz, A.; Torres-Gonzalez, J.; Espinosa-Beltran, F. J.; Herrera-Hernandez, H.

    2015-07-01

    Magnetron Sputter Deposition technique with DC was used for the deposition of Ni-Cr coatings on AISI 316 SS like substrate. The cathode with a nominal composition Ni-22 at% Cr was prepared by Mechanical Alloying (MA) technique, with a maximum milling time of 16 hours and, with a high energy SPEX 8000 mill. The coatings were made under Argon atmosphere at room temperature with a power of 100 W at different times of growth. Chemical composition, microstructure, topography, nano hardness and wear of the coatings were evaluated using the techniques of microanalysis by energy dispersive X-ray analyzer (EDAX), X-Ray Diffraction (XRD), Atomic Force Microscopy (AFM), Nano-indentation and pin-on-Disk, respectively. After milling, was not detected contamination in the mixtures. XRD analysis revealed that the microstructure of the Ni-Cr alloy was maintained in the coatings with respect to MA powders, with some degree of recrystallization. Nano hardness values were in the order of 8.8 GPa with a Youngs modulus of 195 GPa. The adhesion of the films was evaluated according to their resistance to fracture when these were indented at different loads using Vickers microhardness. The wear test results showed a decrease in the friction coefficient with respect to the increase of thickness films, getting a minimum value of 0.08 with a thickness of 1 μm and which correspond with the maximum growing time. (Author)

  16. Transparent conducting Al-doped ZnO thin films prepared by magnetron sputtering with dc and rf powers applied in combination

    International Nuclear Information System (INIS)

    Minami, Tadatsugu; Ohtani, Yuusuke; Miyata, Toshihiro; Kuboi, Takeshi

    2007-01-01

    A newly developed Al-doped ZnO (AZO) thin-film magnetron-sputtering deposition technique that decreases resistivity, improves resistivity distribution, and produces high-rate depositions has been demonstrated by dc magnetron-sputtering depositions that incorporate rf power (dc+rf-MS), either with or without the introduction of H 2 gas into the deposition chamber. The dc+rf-MS preparations were carried out in a pure Ar or an Ar+H 2 (0%-2%) gas atmosphere at a pressure of 0.4 Pa by adding a rf component (13.56 MHz) to a constant dc power of 80 W. The deposition rate in a dc+rf-MS deposition incorporating a rf power of 150 W was approximately 62 nm/min, an increase from the approximately 35 nm/min observed in dc magnetron sputtering with a dc power of 80 W. A resistivity as low as 3x10 -4 Ω cm and an improved resistivity distribution could be obtained in AZO thin films deposited on substrates at a low temperature of 150 deg. C by dc+rf-MS with the introduction of hydrogen gas with a content of 1.5%. This article describes the effects of adding a rf power component (i.e., dc+rf-MS deposition) as well as introducing H 2 gas into dc magnetron-sputtering preparations of transparent conducting AZO thin films

  17. Impedimetric Thiourea Sensing in Copper Electrorefining Bath based on DC Magnetron Sputtered Nanosilver as Highly Uniform Transducer

    International Nuclear Information System (INIS)

    Mozaffari, S.A.; Amoli, H. Salar; Simorgh, S.; Rahmanian, R.

    2015-01-01

    Highlights: • Fabrication of a novel disposable impedimetric thiourea sensor based on nanostructured Ag film transducer. • Exploiting sputtering as a high-tech method for preparation of highly uniform nanostructured Ag film. • A wonderful combination of nanostructured Ag film and carbon paper substrate as remarkably stable and reproducible sensor for thiourea detection in copper electrorefining bath. • Application of impedimetric assessment for thiourea monitoring due to its rapidity, sensitivity, and repeatability. - Abstract: Highly uniform sputtered nanostructured silver (Nano-Ag) film on the conductive carbon paper (CP) substrate (Nano-Ag/CP) was applied as a novel approach for thiourea (TU) measurement in copper electrorefining bath. Nano-Ag film was achieved by direct current (DC) magnetron sputtering system at the optimized instrumental deposition conditions. Characterization of the surface structure of Nano-Ag film by field emission-scanning electron microscopy (FE-SEM), exhibits uniform Nano-Ag film as an effective transducer for TU sensing. Step by step monitoring of Nano-Ag/CP electrode fabrication were performed using electrochemical methods such as cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS) techniques. Fabricated Nano-Ag/CP electrode was used for TU determination using EIS assessment. The impedimetric results show high sensitivity for TU sensing within 2.0–250 ppm.

  18. The Optimum Fabrication Condition of p-Type Antimony Tin Oxide Thin Films Prepared by DC Magnetron Sputtering

    Directory of Open Access Journals (Sweden)

    Huu Phuc Dang

    2016-01-01

    Full Text Available Transparent Sb-doped tin oxide (ATO thin films were fabricated on quartz glass substrates via a mixed (SnO2 + Sb2O3 ceramic target using direct current (DC magnetron sputtering in ambient Ar gas at a working pressure of 2 × 10−3 torr. X-ray diffraction (XRD, X-ray photoelectron spectroscopy (XPS, Hall-effect, and UV-vis spectra measurements were performed to characterize the deposited films. The substrate temperature of the films was investigated in two ways: (1 films were annealed in Ar ambient gas after being deposited at room temperature or (2 they were deposited directly at different temperatures. The first process for fabricating the ATO films was found to be easier than the second process. The deposited films showed p-type electrical properties, a polycrystalline tetragonal rutile structure, and their average transmittance was greater than 80% in the visible light range at the optimum annealing temperature of 500°C. The best electrical properties of the film were obtained on a 10 wt% Sb2O3-doped SnO2 target with a resistivity, hole concentration, and Hall mobility of 0.55 Ω·cm, 1.2 × 1019 cm−3, and 0.54 cm2V−1s−1, respectively.

  19. Molybdenum thin film deposited by in-line DC magnetron sputtering as a back contact for Cu(In,Ga)Se{sub 2} solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Li Zhaohui; Cho, Eou-Sik [Department of Electronics Engineering, Kyungwon University, San 65, Bokjung-dong, Soojung-gu, Seongnam city, Kyunggi-do, 461-701 (Korea, Republic of); Kwon, Sang Jik, E-mail: sjkwon@kyungwon.ac.kr [Department of Electronics Engineering, Kyungwon University, San 65, Bokjung-dong, Soojung-gu, Seongnam city, Kyunggi-do, 461-701 (Korea, Republic of)

    2011-09-01

    In this paper, we reported the effect of the power and the working pressure on the molybdenum (Mo) films deposited using an in-line direct current (DC) magnetron sputtering system. The electrical and the structural properties of Mo film were improved by increasing DC power from 1 to 3 kW. On the other side, the resistivity of the Mo films became higher with the increasing working pressure. However, the adhesion property was improved when the working pressure was higher. In this work, in order to obtain an optimal Mo film as a back metal contact of Cu(In,Ga)Se{sub 2} (CIGS) solar cells, a bilayer Mo film was formed through the different film structures depending on the working pressure. The first layer was formed at a high pressure of 12 mTorr for a better adhesion and the second layer was formed at a low pressure of 3 mTorr for a lower resistivity.

  20. Low friction coefficient coatings Ni-Cr by magnetron sputtering, DC

    Directory of Open Access Journals (Sweden)

    Morales-Hernández, Jorge

    2015-09-01

    Full Text Available Magnetron Sputter Deposition technique with DC was used for the deposition of Ni-Cr coatings on AISI 316 SS like substrate. The cathode with a nominal composition Ni-22 at% Cr was prepared by Mechanical Alloying (MA technique, with a maximum milling time of 16 hours and, with a high energy SPEX 8000 mill. The coatings were made under Argon atmosphere at room temperature with a power of 100 W at different times of growth. Chemical composition, microstructure, topography, nanohardness and wear of the coatings were evaluated using the techniques of microanalysis by energy dispersive X-ray analyzer (EDAX, X-Ray Diffraction (XRD, Atomic Force Microscopy (AFM, Nano-indentation and pin-on-Disk, respectively. After milling, was not detected contamination in the mixtures. XRD analysis revealed that the microstructure of the Ni-Cr alloy was maintained in the coatings with respect to MA powders, with some degree of recrystallization. Nanohardness values were in the order of 8.8 GPa with a Young’s modulus of 195 GPa. The adhesion of the films was evaluated according to their resistance to fracture when these were indented at different loads using Vickers microhardness. The wear test results showed a decrease in the friction coefficient with respect to the increase of thickness’ films, getting a minimum value of 0.08 with a thickness of 1 μm and which correspond with the maximum growing time.La técnica de Deposición por Chisporroteo Magnético (Magnetron Sputtering con el proceso DC, fue usado para la deposición de los recubrimientos de Ni-Cr sobre acero inoxidable AISI 316 como sustrato. El cátodo con una composición nominal Ni-22 at% Cr fue preparado por la técnica de Aleado Mecánico (AM, con un tiempo máximo de molienda de 16 horas y con un molino de alta energía tipo SPEX 8000. Las películas se realizaron bajo una atmósfera de argón a temperatura ambiente con una potencia de 100 W a diferentes tiempos de crecimiento. La composición qu

  1. Oxidation resistance of CrN/(Cr,V)N hard coatings deposited by DC magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Panjan, P., E-mail: peter.panjan@ijs.si [Jožef Stefan Institute, Jamova 39, 1000 Ljubljana (Slovenia); Drnovšek, A.; Kovač, J.; Gselman, P. [Jožef Stefan Institute, Jamova 39, 1000 Ljubljana (Slovenia); Bončina, T. [University of Maribor, Faculty of Mechanical Engineering, Smetanova 17, 2000 Maribor (Slovenia); Paskvale, S.; Čekada, M.; Kek Merl, D.; Panjan, M. [Jožef Stefan Institute, Jamova 39, 1000 Ljubljana (Slovenia)

    2015-09-30

    In recent years vanadium-doped hard coatings have become available as possible candidates for self-lubrication at high temperatures. Their low coefficient of friction has mainly been attributed to the formation of the V{sub 2}O{sub 5} phase. However, the formation of vanadium oxides must be controlled by the out-diffusion of vanadium in order to achieve the combination of a low coefficient of friction and good mechanical properties for the protective coatings. In this work the application of a nanolayer of CrN/(Cr,V)N hard coating was proposed as a way to better control the out-diffusion of vanadium, while the topmost chromium oxide layer acts as barrier for the vanadium diffusion. However, the aim of this investigation was not only to focus on the formation of the oxide layer. Special attention was given to the oxidation process that takes place at the growth defects, where we observed a strong diffusion of vanadium taking place. The CrN/(Cr,V)N nanolayer coatings were deposited by DC unbalanced magnetron sputtering in an CC800/9 (CemeCon) industrial unit. The vanadium concentration in the (Cr,V)N layers was varied in the range 1.0–11.5 at.%. - Highlights: • Oxidation processes of CrN/(Cr,V)N nanolayers with vanadium content were investigated. • The CrN/(Cr,V)N hard layers were oxidized at high temperature in O2 atm. • The top chromium oxide layer acts as a diffusion barrier for vanadium ions during oxidation. • Important role of growth defects during the oxidation process is demonstrated.

  2. Quantitative characterization of silicon- and aluminium oxynitride films produced by reactive dc-magnetron sputtering

    International Nuclear Information System (INIS)

    Dreer, S.

    2000-05-01

    The deposition of aluminum and silicon oxynitride films by reactive dc-magnetron sputtering was systematically planned by design of experiments, carried out and evaluated with the application of specialized statistics software. The influence of the deposition parameters on the resulting films was evaluated by multiple regression analysis. With the obtained data a model of the deposition process for the quantitative prediction of the deposition parameters necessary to obtain films with desired composition was built. This is also of technological importance, since the physical properties of the films strongly depend on their composition. Furthermore, the long term repeatability of the deposition process was implemented into the model. A precise and economic way for quantitative bulk analysis of silicon/aluminum, oxygen and nitrogen based on EPMA was presented and the use of data gained by the latter method is discussed for the calculation of relative sensitivity factors for SIMS and hf-SNMS. Advantages and disadvantages of SIMS, hf-SNMS, hf-GD-OES, and sputter AES were compared. The combination FT-IR/EPMA/SIMS at present offers the best possibility for a quantitative bulk and in depth distribution analysis of such films in the range of 20 to 1000 nm thickness. The films were also characterized by XRD and PAA. The refractive index and the growth rate of the films were determined by spectroscopic ellipsometry. With indentation by a nano hardness tester the hardness and the Young's modulus of the films were obtained. The results of these measurements were evaluated by statistical software. The dependencies of the physical properties on the deposition parameters and on the film thickness were evaluated and quantified. Furthermore, the dependencies of the physical properties on the film composition represented by the oxygen content were evaluated. (author)

  3. Oxidation resistance of CrN/(Cr,V)N hard coatings deposited by DC magnetron sputtering

    International Nuclear Information System (INIS)

    Panjan, P.; Drnovšek, A.; Kovač, J.; Gselman, P.; Bončina, T.; Paskvale, S.; Čekada, M.; Kek Merl, D.; Panjan, M.

    2015-01-01

    In recent years vanadium-doped hard coatings have become available as possible candidates for self-lubrication at high temperatures. Their low coefficient of friction has mainly been attributed to the formation of the V_2O_5 phase. However, the formation of vanadium oxides must be controlled by the out-diffusion of vanadium in order to achieve the combination of a low coefficient of friction and good mechanical properties for the protective coatings. In this work the application of a nanolayer of CrN/(Cr,V)N hard coating was proposed as a way to better control the out-diffusion of vanadium, while the topmost chromium oxide layer acts as barrier for the vanadium diffusion. However, the aim of this investigation was not only to focus on the formation of the oxide layer. Special attention was given to the oxidation process that takes place at the growth defects, where we observed a strong diffusion of vanadium taking place. The CrN/(Cr,V)N nanolayer coatings were deposited by DC unbalanced magnetron sputtering in an CC800/9 (CemeCon) industrial unit. The vanadium concentration in the (Cr,V)N layers was varied in the range 1.0–11.5 at.%. - Highlights: • Oxidation processes of CrN/(Cr,V)N nanolayers with vanadium content were investigated. • The CrN/(Cr,V)N hard layers were oxidized at high temperature in O2 atm. • The top chromium oxide layer acts as a diffusion barrier for vanadium ions during oxidation. • Important role of growth defects during the oxidation process is demonstrated.

  4. Biocompatibility and Surface Properties of TiO2 Thin Films Deposited by DC Magnetron Sputtering

    Science.gov (United States)

    López-Huerta, Francisco; Cervantes, Blanca; González, Octavio; Hernández-Torres, Julián; García-González, Leandro; Vega, Rosario; Herrera-May, Agustín L.; Soto, Enrique

    2014-01-01

    We present the study of the biocompatibility and surface properties of titanium dioxide (TiO2) thin films deposited by direct current magnetron sputtering. These films are deposited on a quartz substrate at room temperature and annealed with different temperatures (100, 300, 500, 800 and 1100 °C). The biocompatibility of the TiO2 thin films is analyzed using primary cultures of dorsal root ganglion (DRG) of Wistar rats, whose neurons are incubated on the TiO2 thin films and on a control substrate during 18 to 24 h. These neurons are activated by electrical stimuli and its ionic currents and action potential activity recorded. Through X-ray diffraction (XRD), the surface of TiO2 thin films showed a good quality, homogeneity and roughness. The XRD results showed the anatase to rutile phase transition in TiO2 thin films at temperatures between 500 and 1100 °C. This phase had a grain size from 15 to 38 nm, which allowed a suitable structural and crystal phase stability of the TiO2 thin films for low and high temperature. The biocompatibility experiments of these films indicated that they were appropriated for culture of living neurons which displayed normal electrical behavior. PMID:28788667

  5. Growth and characterization of a-axis oriented Cr-doped AlN films by DC magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Panda, Padmalochan; Ramaseshan, R., E-mail: seshan@igcar.gov.in; Dash, S. [Materials Science Group, IGCAR, Kalpakkam, 603102 (India); Krishna, Nanda Gopala [Corrosion Science and Technology Group, IGCAR, Kalpakkam, 603102 (India)

    2016-05-23

    Wurtzite type Cr-doped AlN thin films were grown on Si (100) substrates using DC reactive magnetron sputtering with a function of N{sub 2} concentration (15 to 25%). Evolution of crystal structure of these films was studied by GIXRD where a-axis preferred orientation was observed. The electronic binding energy and concentration of Cr in these films were estimated by X-ray photoemission spectroscopy (XPS). We have observed indentation hardness (H{sub IT}) of around 28.2 GPa for a nitrogen concentration of 25%.

  6. Frequency analysis of DC tolerant current transformers

    International Nuclear Information System (INIS)

    Mlejnek, P; Kaspar, P

    2013-01-01

    This article deals with wide frequency range behaviour of DC tolerant current transformers that are usually used in modern static energy meters. In this application current transformers must comply with European and International Standards in their accuracy and DC tolerance. Therefore, the linear DC tolerant current transformers and double core current transformers are used in this field. More details about the problems of these particular types of transformers can be found in our previous works. Although these transformers are designed mainly for power distribution network frequency (50/60 Hz), it can be interesting to understand their behaviour in wider frequency range. Based on this knowledge the new generations of energy meters with measuring quality of electric energy will be produced. This solution brings better measurement of consumption of nonlinear loads or measurement of non-sinusoidal voltage and current sources such as solar cells or fuel cells. The determination of actual power consumption in such energy meters is done using particular harmonics component of current and voltage. We measured the phase and ratio errors that are the most important parameters of current transformers, to characterize several samples of current transformers of both types

  7. Nanoscale compositional analysis of NiTi shape memory alloy films deposited by DC magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, S. K.; Mohan, S. [Centre for Nano Science and Engineering, Indian Institute of Science, Bangalore-560012 (India); Bysakh, S. [Central Glass and Ceramics Research Institute, Kolkata-700032 (India); Kumar, A.; Kamat, S. V. [Defence Metallurgical Research Laboratory, Hyderabad-500058 (India)

    2013-11-15

    The formation of surface oxide layer as well as compositional changes along the thickness for NiTi shape memory alloy thin films deposited by direct current magnetron sputtering at substrate temperature of 300 °C in the as-deposited condition as well as in the postannealed (at 600 °C) condition have been thoroughly studied by using secondary ion mass spectroscopy, x-ray photoelectron spectroscopy, and scanning transmission electron microscopy-energy dispersive x-ray spectroscopy techniques. Formation of titanium oxide (predominantly titanium dioxide) layer was observed in both as-deposited and postannealed NiTi films, although the oxide layer was much thinner (8 nm) in as-deposited condition. The depletion of Ti and enrichment of Ni below the oxide layer in postannealed films also resulted in the formation of a graded microstructure consisting of titanium oxide, Ni{sub 3}Ti, and B2 NiTi. A uniform composition of B2 NiTi was obtained in the postannealed film only below a depth of 200–250 nm from the surface. Postannealed film also exhibited formation of a ternary silicide (Ni{sub x}Ti{sub y}Si) at the film–substrate interface, whereas no silicide was seen in the as-deposited film. The formation of silicide also caused a depletion of Ni in the film in a region ∼250–300 nm just above the film substrate interface.

  8. Domino Platform: PVD Coaters for Arc Evaporation and High Current Pulsed Magnetron Sputtering

    International Nuclear Information System (INIS)

    Vetter, J; Müller, J; Erkens, G

    2012-01-01

    AlTiN and CrN coatings were deposited in hybrid DOMINO platforms by magnetron sputtering (DC-MS, DC-MS+HCP-MS, HCP-MS) and vacuum arc evaporation. The ion cleaning was done by the AEGD process. The coating rates and the energy efficiency of both deposition processes were compared. The roughness effects of the different coating types were discussed. Preliminary results of the change of pulse characteristics during simultaneously running of HCP-MS plus vacuum arc evaporation are shown.

  9. Current-ripple effect on superconductive dc critical current measurements

    International Nuclear Information System (INIS)

    Goodrich, L.F.; Bray, S.L.; Clark, A.F.

    1988-01-01

    The effect of sample-current power-supply ripple on dc critical current measurement in multifilamentary NbTi superconductors was evaluated. In general the ripple in a current supply became more significant above 500 A because effective filtering was hard to achieve. Ripple also caused noise at the input of the voltmeter used for the measurements. The quantitative effect of current ripple was studied using a battery current supply modified to allow the creation of ripple current with variable frequency and amplitude. Problems common to all large-conductor critical current measurements are discussed

  10. Effects of substrate heating and vacuum annealing on optical and electrical properties of alumina-doped ZnO films deposited by DC magnetron sputtering

    Science.gov (United States)

    Tang, Chien-Jen; Wang, Chun-Yuan; Jaing, Cheng-Chung

    2011-10-01

    Alumina-doped zinc oxide (AZO) films have wide range of applications in optical and optoelectronic devices. AZO films have advantage in high transparency, high stability to hydrogen plasma and low cost to alternative ITO film. AZO film was prepared by direct-current (DC) magnetron sputtering from ceramic ZnO:Al2O3 target. The AZO films were compared in two different conditions. The first is substrate heating process, in which AZO film was deposited by different substrate temperature, room temperature, 150 °C and 250 °C. The second is vacuum annealing process, in which AZO film with deposited at room temperature have been annealed at 250 °C and 450 °C in vacuum. The optical properties, electrical properties, grain size and surface structure properties of the films were studied by UV-VIS-NIR spectrophotometer, Hall effect measurement equipment, x-ray diffraction, and scanning electron microscopy. The resistivity, carrier mobility, carrier concentration, and grain size of AZO films were 1.92×10-3 Ω-cm, 6.38 cm2/Vs, 5.08×1020 #/cm3, and 31.48 nm respectively, in vacuum annealing of 450 °C. The resistivity, carrier mobility, carrier concentration, and grain size of AZO films were 8.72×10-4 Ω-cm, 6.32 cm2/Vs, 1.13×1021 #/cm3, and 31.56 nm, respectively, when substrate temperature was at 250 °C. Substrate heating process is better than vacuum annealed process for AZO film deposited by DC Magnetron Sputtering.

  11. Electrical and optical properties of reactive dc magnetron sputtered silver-doped indium oxide thin films: role of oxygen

    International Nuclear Information System (INIS)

    Subrahmanyam, A.; Barik, U.K.

    2006-01-01

    Silver-doped indium oxide thin films have been prepared on glass and quartz substrates at room temperature (300 K) by a reactive dc magnetron sputtering technique using an alloy target of pure indium and silver (80:20 at. %). During sputtering, the oxygen flow rates are varied in the range 0.00-2.86 sccm keeping the magnetron power constant at 40 W. The resistivity of these films is in the range 10 0 -10 -3 Ωcm and they show a negative temperature coefficient of resistivity. The films exhibit p-type conductivity at an oxygen flow rate of 1.71 sccm. The work function of these silver-indium oxide films has been measured by a Kelvin probe technique. The refractive index of the films (at 632.8 nm) varies in the range 1.13-1.20. Silver doping in indium oxide narrows the band gap of indium oxide (3.75 eV). (orig.)

  12. Electrical and optical properties of reactive dc magnetron sputtered silver-doped indium oxide thin films: role of oxygen

    Energy Technology Data Exchange (ETDEWEB)

    Subrahmanyam, A; Barik, U K [Indian Institute of Technology Madras, Semiconductor Physics Laboratory, Department of Physics, Chennai (India)

    2006-07-15

    Silver-doped indium oxide thin films have been prepared on glass and quartz substrates at room temperature (300 K) by a reactive dc magnetron sputtering technique using an alloy target of pure indium and silver (80:20 at. %). During sputtering, the oxygen flow rates are varied in the range 0.00-2.86 sccm keeping the magnetron power constant at 40 W. The resistivity of these films is in the range 10{sup 0}-10{sup -3} {omega}cm and they show a negative temperature coefficient of resistivity. The films exhibit p-type conductivity at an oxygen flow rate of 1.71 sccm. The work function of these silver-indium oxide films has been measured by a Kelvin probe technique. The refractive index of the films (at 632.8 nm) varies in the range 1.13-1.20. Silver doping in indium oxide narrows the band gap of indium oxide (3.75 eV). (orig.)

  13. Effect of target power on the physical properties of Ti thin films prepared by DC magnetron sputtering with supported discharge

    Directory of Open Access Journals (Sweden)

    Kavitha A.

    2017-02-01

    Full Text Available The present paper describes the effect of target power on the properties of Ti thin films prepared by DC magnetron sputtering with (triode mode and without (diode mode supported discharge. The traditional diode magnetron sputtering with an addition of a hot filament has been used to sustain the discharge at a lower pressure. The effect of target power (60, 80, 100 and 120 W on the physical properties of Ti thin films has been studied in diode and triode modes. XRD studies showed that the Ti thin films prepared at a target power up to 100 W in diode mode were amorphous in nature. The Ti thin films exhibited crystalline structure at much lower target power of 80 W with a preferred orientation along (0 0 2 plane. The grain size of Ti thin films prepared in triode mode increased from 64 nm to 80 nm, whereas in diode mode, the grain size increased from 2 nm to 5 nm. EDAX analysis confirmed that the incorporation of reactive gases was lower in triode mode compared to diode mode. The electrical resistivity of Ti thin films deposited in diode mode was found to be 85 µΩ⋅cm (target power 120 W. The electrical resistivity of Ti thin films in triode mode was found to be deceased to 15.2 µΩ⋅cm (target power 120 W.

  14. Distribution of Fe atom density in a dc magnetron sputtering plasma source measured by laser-induced fluorescence imaging spectroscopy

    Science.gov (United States)

    Shibagaki, K.; Nafarizal, N.; Sasaki, K.; Toyoda, H.; Iwata, S.; Kato, T.; Tsunashima, S.; Sugai, H.

    2003-10-01

    Magnetron sputtering discharge is widely used as an efficient method for thin film fabrication. In order to achieve the optimized fabrication, understanding of the kinetics in plasmas is essential. In the present work, we measured the density distribution of sputtered Fe atoms using laser-induced fluorescence imaging spectroscopy. A dc magnetron plasma source with a Fe target was used. An area of 20 × 2 mm in front of the target was irradiated by a tunable laser beam having a planar shape. The picture of laser-induced fluorescence on the laser beam was taken using an ICCD camera. In this way, we obtained the two-dimensional image of the Fe atom density. As a result, it has been found that the Fe atom density observed at a distance of several centimeters from the target is higher than that adjacent to the target, when the Ar gas pressure was relatively high. It is suggested from this result that some gas-phase production processes of Fe atoms are available in the plasma. This work has been performed under the 21st Century COE Program by the Ministry of Education, Culture, Sports, Science and Technology in Japan.

  15. Incorporation of N in TiO{sub 2} films grown by DC-reactive magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Serio, S. [CEFITEC, Departamento de Fisica, Faculdade de Ciencias e Tecnologia da Universidade Nova de Lisboa, 2829-516 Caparica (Portugal); Melo Jorge, M.E. [CCMM, Departamento de Quimica e Bioquimica, Faculdade de Ciencias da Universidade de Lisboa, Campo Grande C8, 1749-016 Lisboa (Portugal); Nunes, Y. [CEFITEC, Departamento de Fisica, Faculdade de Ciencias e Tecnologia da Universidade Nova de Lisboa, 2829-516 Caparica (Portugal); Barradas, N.P. [Instituto Tecnologico e Nuclear and CFNUL, E.N. 10, Sacavem 2686-953 (Portugal); Alves, E., E-mail: ealves@itn.pt [Instituto Tecnologico e Nuclear and CFNUL, E.N. 10, Sacavem 2686-953 (Portugal); Munnik, F. [Helmholtz-Zentrum Dresden-Rossendorf (Germany)

    2012-02-15

    Photocatalytic properties of TiO{sub 2} are expected to play an important role on emerging technologies based on OH radicals to destroy harmful nonbiodegradable organic and inorganic contaminants in water. The drawback is the wide band gap of TiO{sub 2} (3.2 eV) limiting its use to the UV part of electromagnetic spectrum under sunlight. Therefore, modifications of TiO{sub 2} are needed to tune the gap in order to allow an efficient use of the entire solar spectrum. One possibility is N-doping of TiO{sub 2} to make the photocatalytic activity possible under visible light and more suitable for water treatment. In our study nitrogen-doped TiO{sub 2} (TiO{sub 2-x}N{sub x}) films were deposited by DC-reactive magnetron sputtering using a dual-magnetron co-deposition apparatus on unheated glass and silicon substrates using a pure titanium target. The depth profile of nitrogen was measured with heavy ion elastic recoil detection analysis combined with Rutherford backscattering spectrometry (RBS) and correlated with the optical and structural properties obtained by UV-VIS spectroscopy and X-ray diffraction (XRD).

  16. Electron beam induced coloration and luminescence in layered structure of WO3 thin films grown by pulsed dc magnetron sputtering

    International Nuclear Information System (INIS)

    Karuppasamy, A.; Subrahmanyam, A.

    2007-01-01

    Tungsten oxide thin films have been deposited by pulsed dc magnetron sputtering of tungsten in argon and oxygen atmosphere. The as-deposited WO 3 film is amorphous, highly transparent, and shows a layered structure along the edges. In addition, the optical properties of the as-deposited film show a steplike behavior of extinction coefficient. However, the electron beam irradiation (3.0 keV) of the as-deposited films results in crystallization, coloration (deep blue), and luminescence (intense red emission). The above changes in physical properties are attributed to the extraction of oxygen atoms from the sample and the structural modifications induced by electron bombardment. The present method of coloration and luminescence has a potential for fabricating high-density optical data storage device

  17. Structural and electrical characteristics of highly textured oxidation-free Ru thin films by DC magnetron sputtering

    International Nuclear Information System (INIS)

    Tian, H.-Y.; Wang Yu; Chan, H.-L-W.; Choy, C.-L.; No, K.-S.

    2005-01-01

    Textured Ru thin films (∼120 nm) were deposited on Si and rolling-assisted biaxially textured Ni substrates by a DC magnetron sputtering technique with a two-step process. The biaxially textured pure Ni substrates with a thickness of 80 μm were fabricated by rolling followed by recrystallization. The alignments and the crystallinity of Ru films were analyzed by pole figures, as well as X-ray diffraction (θ - 2θ) analysis. The highly (0 0 2) oriented Ru films were fabricated on Si substrates, and four-fold symmetric Ru films on Ni(2 0 0) substrates. The resistivities of pure metallic Ru films were 20-80 μΩ cm for Ru on Si and 16-40 μΩ cm on Ni, respectively, which is sufficiently low to be used as a buffer layer in superconductor tapes or electrode materials in capacitor dielectrics

  18. The Effect of Thickness on the Physical Properties of Fe2O3 Thin Films Prepared by DC Magnetron Sputtering

    Directory of Open Access Journals (Sweden)

    Baha'a A. Al-Hilli

    2017-11-01

    Full Text Available The objective of this study is to assess the influence of nano-particle Fe2O3 thin film thickness on some physical properties which were prepared by magnetron DC- sputtering on glass substrate at room temperature. The structure was tested with X-Ray diffraction and it was to be amorphous and to become single crystal with recognized peak in (003 after annealing at temperature 500oC. The physical properties as a function of deposition parameters and then film thickness were studied. The optical properties such as absorbance, energy gap and some optical constants are measured and found that of about (3eV energy gap.

  19. Thin Film growth and characterization of Ti doped ZnO by RF/DC magnetron sputtering

    KAUST Repository

    Baseer Haider, M.

    2015-01-01

    Thin film Ti doped ZnO (Ti-ZnO) film were grown on sapphire (0001) substrate by RF and DC magnetron sputtering. Films were grown at a substrate temperature of 250 °C with different Ti/Zn concentration. Surface chemical study of the samples was performed by X-ray photoelectron spectroscopy to determine the stoichiometry and Ti/Zn ratio for all samples. Surface morphology of the samples were studied by atomic force microscopy. X-ray diffraction was carried out to determine the crystallinity of the film. No secondary phases of TixOy was observed. We observed a slight increase in the lattice constant with the increase in Ti concentration in ZnO. No ferromagnetic signal was observed for any of the samples. However, some samples showed super-paramagnetic phase. © 2015 Materials Research Society.

  20. Bonding structure and morphology of chromium oxide films grown by pulsed-DC reactive magnetron sputter deposition

    Energy Technology Data Exchange (ETDEWEB)

    Gago, R., E-mail: rgago@icmm.csic.es [Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Científicas, E-28049 Madrid (Spain); Vinnichenko, M. [Fraunhofer-Institut für Keramische Technologien und Systeme IKTS, D-01277 Dresden (Germany); Hübner, R. [Helmholtz-Zentrum Dresden – Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstraße 400, 01328 Dresden (Germany); Redondo-Cubero, A. [Departamento de Física Aplicada and Centro de Microanálisis de Materiales, Universidad Autónoma de Madrid, E-28049 Madrid (Spain)

    2016-07-05

    Chromium oxide (CrO{sub x}) thin films were grown by pulsed-DC reactive magnetron sputter deposition in an Ar/O{sub 2} discharge as a function of the O{sub 2} fraction in the gas mixture (ƒ) and for substrate temperatures, T{sub s}, up to 450 °C. The samples were analysed by Rutherford backscattering spectrometry (RBS), spectroscopic ellipsometry (SE), atomic force microscopy (AFM), scanning (SEM) and transmission (TEM) electron microscopy, X-ray diffraction (XRD), and X-ray absorption near-edge structure (XANES). On unheated substrates, by increasing ƒ the growth rate is higher and the O/Cr ratio (x) rises from ∼2 up to ∼2.5. Inversely, by increasing T{sub s} the atomic incorporation rate drops and x falls to ∼1.8. XRD shows that samples grown on unheated substrates are amorphous and that nanocrystalline Cr{sub 2}O{sub 3} (x = 1.5) is formed by increasing T{sub s}. In amorphous CrO{sub x}, XANES reveals the presence of multiple Cr environments that indicate the growth of mixed-valence oxides, with progressive promotion of hexavalent states with ƒ. XANES data also confirms the formation of single-phase nanocrystalline Cr{sub 2}O{sub 3} at elevated T{sub s}. These structural changes also reflect on the optical and morphological properties of the films. - Highlights: • XANES of CrO{sub x} thin films grown by pulsed-DC reactive magnetron sputtering. • Identification of mixed-valence amorphous CrO{sub x} oxides on unheated substrates. • Promotion of amorphous chromic acid (Cr{sup VI}) by increasing O{sub 2} partial pressure. • Production of single-phase Cr{sub 2}O{sub 3} films by increasing substrate temperature. • Correlation of bonding structure with morphological and optical properties.

  1. Dielectric properties of DC reactive magnetron sputtered Al{sub 2}O{sub 3} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Prasanna, S. [Thin Film Center, Department of Physics, PSG College of Technology, Coimbatore, 641 004 (India); Mohan Rao, G. [Department of Instrumentation, Indian Institute of Science (IISc), Bangalore, 560 012 (India); Jayakumar, S., E-mail: s_jayakumar_99@yahoo.com [Thin Film Center, Department of Physics, PSG College of Technology, Coimbatore, 641 004 (India); Kannan, M.D. [Thin Film Center, Department of Physics, PSG College of Technology, Coimbatore, 641 004 (India); Ganesan, V. [Low Temperature Lab, UGC-DAE Consortium for Scientific Research (CSR), Indore, 452 017 (India)

    2012-01-31

    Alumina (Al{sub 2}O{sub 3}) thin films were sputter deposited over well-cleaned glass and Si < 100 > substrates by DC reactive magnetron sputtering under various oxygen gas pressures and sputtering powers. The composition of the films was analyzed by X-ray photoelectron spectroscopy and an optimal O/Al atomic ratio of 1.59 was obtained at a reactive gas pressure of 0.03 Pa and sputtering power of 70 W. X-ray diffraction results revealed that the films were amorphous until 550 Degree-Sign C. The surface morphology of the films was studied using scanning electron microscopy and the as-deposited films were found to be smooth. The topography of the as-deposited and annealed films was analyzed by atomic force microscopy and a progressive increase in the rms roughness of the films from 3.2 nm to 4.53 nm was also observed with increase in the annealing temperature. Al-Al{sub 2}O{sub 3}-Al thin film capacitors were then fabricated on glass substrates to study the effect of temperature and frequency on the dielectric property of the films. Temperature coefficient of capacitance, AC conductivity and activation energy were determined and the results are discussed. - Highlights: Black-Right-Pointing-Pointer Al{sub 2}O{sub 3} thin films were deposited by DC reactive magnetron sputtering. Black-Right-Pointing-Pointer The films were found to be amorphous up to annealing temperature of 550 C. Black-Right-Pointing-Pointer An increase in rms roughness of the films was observed with annealing. Black-Right-Pointing-Pointer Al-Al{sub 2}O{sub 3}-Al thin film capacitors were fabricated and dielectric constant was 7.5. Black-Right-Pointing-Pointer The activation energy decreased with increase in frequency.

  2. Bioactivity response of Ta{sub 1-x}O{sub x} coatings deposited by reactive DC magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Almeida Alves, C.F., E-mail: cristiana.alves@fisica.uminho.pt [GRF-CFUM, Physics Departament, University of Minho, Campus of Azurem, Guimaraes 4800-058 (Portugal); Cavaleiro, A. [SEG-CEMUC, Mechanical Engineering Department, University of Coimbra, Coimbra 3030-788 (Portugal); Carvalho, S. [GRF-CFUM, Physics Departament, University of Minho, Campus of Azurem, Guimaraes 4800-058 (Portugal); SEG-CEMUC, Mechanical Engineering Department, University of Coimbra, Coimbra 3030-788 (Portugal)

    2016-01-01

    The use of dental implants is sometimes accompanied by failure due to periimplantitis disease and subsequently poor esthetics when soft–hard tissue margin recedes. As a consequence, further research is needed for developing new bioactive surfaces able to enhance the osseous growth. Tantalum (Ta) is a promising material for dental implants since, comparing with titanium (Ti), it is bioactive and has an interesting chemistry which promotes the osseointegration. Another promising approach for implantology is the development of implants with oxidized surfaces since bone progenitor cells interact with the oxide layer forming a diffusion zone due to its ability to bind with calcium which promotes a stronger bond. In the present report Ta-based coatings were deposited by reactive DC magnetron sputtering onto Ti CP substrates in an Ar + O{sub 2} atmosphere. In order to assess the osteoconductive response of the studied materials, contact angle and in vitro tests of the samples immersed in Simulated Body Fluid (SBF) were performed. Structural results showed that oxide phases where achieved with larger amounts of oxygen (70 at.% O). More compact and smooth coatings were deposited by increasing the oxygen content. The as-deposited Ta coating presented the most hydrophobic character (100°); with increasing oxygen amount contact angles progressively diminished, down to the lowest measured value, 63°. The higher wettability is also accompanied by an increase on the surface energy. Bioactivity tests demonstrated that highest O-content coating, in good agreement with wettability and surface energy values, showed an increased affinity for apatite adhesion, with higher Ca/P ratio formation, when compared to the bare Ti substrates. - Highlights: • Ta{sub 1-x}O{sub x} coatings were deposited by reactive DC magnetron sputtering. • Amorphous oxide phases were achieved with higher oxygen amounts. • Contact angles progressively diminished, with increasing oxygen content. • Ta

  3. Digital DC beam current measurement on SSRF storage ring

    International Nuclear Information System (INIS)

    Xiong Liang; Yin Chongxian; Liu Ming; Chen Jianfeng

    2011-01-01

    Both DC current transformer (DCCT) and integrating current transformer (ICT) can be used in DC beam current measurement. The ICT has strong capability of resisting electromagnetic interference, but its measurement accuracy cannot satisfy the DC beam current measurement requirement when using traditional high speed A/D. With high resolution A/D and equivalent sampling system, DC beam current measuring system based on ICT can reach high accuracy compared with DCCT system. In this paper, the ICT-based DC beam current measurement, equivalent sampling method and testing results at Shanghai Synchrotron Radiation Facility(SSRF) is described. (authors)

  4. Comparative study of zinc oxide and aluminum doped zinc oxide transparent thin films grown by direct current magnetron sputtering

    International Nuclear Information System (INIS)

    Suchea, M.; Christoulakis, S.; Katsarakis, N.; Kitsopoulos, T.; Kiriakidis, G.

    2007-01-01

    Pure and aluminum (Al) doped zinc oxide (ZnO and ZAO) thin films have been grown using direct current (dc) magnetron sputtering from pure metallic Zn and ceramic ZnO targets, as well as from Al-doped metallic ZnAl2at.% and ceramic ZnAl2at.%O targets at room temperature (RT). The effects of target composition on the film's surface topology, crystallinity, and optical transmission have been investigated for various oxygen partial pressures in the sputtering atmosphere. It has been shown that Al-doped ZnO films sputtered from either metallic or ceramic targets exhibit different surface morphology than the undoped ZnO films, while their preferential crystalline growth orientation revealed by X-ray diffraction remains always the (002). More significantly, Al-doping leads to a larger increase of the optical transmission and energy gap (E g ) of the metallic than of the ceramic target prepared films

  5. Structure adhesion and corrosion resistance study of tungsten bisulfide doped with titanium deposited by DC magnetron co-sputtering

    Energy Technology Data Exchange (ETDEWEB)

    De La Roche, J. [Laboratorio de Física del Plasma, Universidad Nacional de Colombia Sede Manizales, Km. 9 vía al aeropuerto, Campus La Nubia, Manizales (Colombia); González, J.M. [Laboratorio de Recubrimientos Duros y Aplicaciones Industriales – RDAI, Universidad del Valle, Calle 13 N° 100-00 Ciudadela Meléndez, Cali (Colombia); Restrepo-Parra, E., E-mail: erestrepop@unal.edu.co [Laboratorio de Física del Plasma, Universidad Nacional de Colombia Sede Manizales, Km. 9 vía al aeropuerto, Campus La Nubia, Manizales (Colombia); Sequeda, F. [Laboratorio de Recubrimientos Duros y Aplicaciones Industriales – RDAI, Universidad del Valle, Calle 13 N° 100-00 Ciudadela Meléndez, Cali (Colombia); Alleh, V.; Scharf, T.W. [The University of North Texas, Department of Materials Science and Engineering, Denton, TX 76203 (United States)

    2014-11-30

    Highlights: • Ti-doped WS{sub 2} films were grown via the magnetron co-sputtering technique. • At a high Ti percentage, the crystalline structure of WS{sub 2} coatings tends to be amorphous. • As the Ti percentage increases in WS{sub 2} coatings, nanocomposites tend to form. • Ti-doped WS{sub 2} films have elastic behavior compared with the plastic response of pure WS{sub 2} films. • A high Ti percentage increases the corrosion resistance of WS{sub 2} films. - Abstract: Titanium-doped tungsten bisulfide thin films (WS{sub 2}-Ti) were grown using a DC magnetron co-sputtering technique on AISI 304 stainless steel and silicon substrates. The films were produced by varying the Ti cathode power from 0 to 25 W. Using energy dispersive spectroscopy (EDS), the concentration of Ti in the WS{sub 2} was determined, and a maximum of 10% was obtained for the sample grown at 25 W. Moreover, the S/W ratio was calculated and determined to increase as a function of the Ti cathode power. According to transmission electron microscopy (TEM) results, at high titanium concentrations (greater than 6%), nanocomposite formation was observed, with nanocrystals of Ti embedded in an amorphous matrix of WS{sub 2}. Using the scratch test, the coatings’ adhesion was analyzed, and it was observed that as the Ti percentage was increased, the critical load (Lc) also increased. Furthermore, the failure type changed from plastic to elastic. Finally, the corrosion resistance was evaluated using the electrochemical impedance spectroscopy (EIS) technique, and it was observed that at high Ti concentrations, the corrosion resistance was improved, as Ti facilitates coating densification and generates a protective layer.

  6. Improvement of corrosion protection property of Mg-alloy by DLC and Si-DLC coatings with PBII technique and multi-target DC-RF magnetron sputtering

    International Nuclear Information System (INIS)

    Masami, Ikeyama; Setsuo, Nakao; Tsutomu, Sonoda; Junho, Choi

    2009-01-01

    Magnesium alloys have been considered as one of the most promising light weight materials with potential applications for automobile and aircraft components. Their poor corrosion resistance, however, has to date prevented wider usage. Diamond-like carbon (DLC) and silicon-incorporated DLC (Si-DLC) coatings are known to provide a high degree of corrosion protection, and hold accordingly promise for enhancing the corrosion resistance of the magnesium alloys. In this work we have studied the effect of coating conditions of DLC coatings as well as Si incorporation into coating on corrosion resistance, deposited onto AZ91 magnesium alloy substrates by plasma based ion implantation (PBII). The influences of a Ti interlayer beneath the DLC, Si-DLC and Ti incorporated DLC (Ti-DLC) coatings fabricated by multi-target direct-current radio-frequency (DC-RF) magnetron sputtering were also examined on both the adhesion strength and corrosion resistance of the materials. We have also examined the effect of the Si content in the Si-DLC coatings made by magnetron sputtering on the alloys' corrosion resistance. The results of potentiodynamic polarization measurements demonstrate that Si-DLC coating deposited by PBII exhibits the highest corrosion resistance in an aqueous 0.05 M NaCl solution. Although Ti layer is helpful in increasing adhesion between DLC coating and AZ91 substrate, it also influences adversely corrosion protection. The ozone treatment of the magnesium alloy's surface before the formation of coatings has been found to improve both adhesion strength and corrosion resistance.

  7. Improvement of corrosion protection property of Mg-alloy by DLC and Si-DLC coatings with PBII technique and multi-target DC-RF magnetron sputtering

    Science.gov (United States)

    Masami, Ikeyama; Setsuo, Nakao; Tsutomu, Sonoda; Junho, Choi

    2009-05-01

    Magnesium alloys have been considered as one of the most promising light weight materials with potential applications for automobile and aircraft components. Their poor corrosion resistance, however, has to date prevented wider usage. Diamond-like carbon (DLC) and silicon-incorporated DLC (Si-DLC) coatings are known to provide a high degree of corrosion protection, and hold accordingly promise for enhancing the corrosion resistance of the magnesium alloys. In this work we have studied the effect of coating conditions of DLC coatings as well as Si incorporation into coating on corrosion resistance, deposited onto AZ91 magnesium alloy substrates by plasma based ion implantation (PBII). The influences of a Ti interlayer beneath the DLC, Si-DLC and Ti incorporated DLC (Ti-DLC) coatings fabricated by multi-target direct-current radio-frequency (DC-RF) magnetron sputtering were also examined on both the adhesion strength and corrosion resistance of the materials. We have also examined the effect of the Si content in the Si-DLC coatings made by magnetron sputtering on the alloys' corrosion resistance. The results of potentiodynamic polarization measurements demonstrate that Si-DLC coating deposited by PBII exhibits the highest corrosion resistance in an aqueous 0.05 M NaCl solution. Although Ti layer is helpful in increasing adhesion between DLC coating and AZ91 substrate, it also influences adversely corrosion protection. The ozone treatment of the magnesium alloy's surface before the formation of coatings has been found to improve both adhesion strength and corrosion resistance.

  8. Digital peak current mode control with adaptive slope compensation for DC-DC converters

    DEFF Research Database (Denmark)

    Andersen, Karsten Holm; Nymand, Morten

    2017-01-01

    performance and stability of current mode control. The presented method adapt to DC-DC converter operating conditions by estimating the rising and falling inductor current slopes, to apply a current slope compensation value to obtain a constant quality factor. The experimental results verifies the theoretical......This paper presents an adaptive slope compensation method for peak current mode control of digital controlled DC-DC converters, which controls the quality factor of the complex conjugated poles at half the switching frequency. Using quality factor control enables optimization of the dynamic...

  9. Active superconducting DC fault current limiter based on flux compensation

    International Nuclear Information System (INIS)

    Shi Jing; Tang Yuejin; Wang, Chen; Zhou Yusheng; Li Jingdong; Ren Li; Chen Shijie

    2006-01-01

    With the extensive application of DC power systems, suppression of DC fault current is an important subject that guarantees system security. This paper presents an active superconducting DC fault current limiter (DC-SFCL) based on flux compensation. The DC-SFCL is composed of two superconducting windings wound on a single iron core, the primary winding is in series with DC power system, and the second winding is connected with AC power system through a PWM converter. In normal operating state, the flux in the iron core is compensated to zero, and the SFCL has no influence on DC power system. In the case of DC system accident, through regulating the active power exchange between the SFCL's second winding and the AC power system, the current on the DC side can be limited to different level complying with the system demand. Moreover, the PWM converter that interface the DC system and AC system can be controlled as a reactive power source to supply voltage support for the AC side, which has little influence on the performance of SFCL. Using MATLAB SIMULINK, the mathematic model of the DC-SFCL is created, simulation results validate the dynamics of system, and the performance of DC-SFCL is confirmed

  10. Room temperature H2S gas sensing property of indium oxide thin films obtained by pulsed D.C. magnetron sputtering

    International Nuclear Information System (INIS)

    Nisha, R.; Madhusoodanan, K.N.; Karthikeyan, Sreejith; Hill, Arthur E.; Pilkington, Richard D.

    2013-01-01

    Indium oxide thin films were prepared by pulsed dc magnetron sputtering technique with no substrate heating. X-ray diffraction was used to investigate the structural properties and AFM was used to study the surface morphology gas sensing performance were conducted using a static gas sensing system. Room temperature gas sensing performance was conducted in range of 17 to 286 ppm. The sensitivity, response and recovery time of the sensor was also determined. (author)

  11. Evaluation of the optoelectronic properties and corrosion behavior of Al2O3-doped ZnO films prepared by dc pulsed magnetron sputtering

    International Nuclear Information System (INIS)

    Zubizarreta, C; Berasategui, E G; Bayón, R; Barriga, J; Escobar Galindo, R; Barros, R; Gaspar, D; Nunes, D; Calmeiro, T; Martins, R; Fortunato, E

    2014-01-01

    The main requirements for transparent conducting oxide (TCO) films acting as electrodes are a high transmission rate in the visible spectral region and low resistivity. However, in many cases, tolerance to temperature and humidity exposure is also an important requirement to be fulfilled by the TCOs to assure proper operation and durability. Besides improving current encapsulation methods, the corrosion resistance of the developed TCOs must also be enhanced to warrant the performance of optoelectronic devices. In this paper the performance of aluminum-doped zinc oxide (AZO) films deposited by pulsed dc magnetron sputtering has been studied. Structure, optical transmittance/reflectance, electrical properties (resistivity, carrier concentration and mobility) and corrosion resistance of the developed coatings have been analyzed as a function of the doping of the target and the coating thickness. Films grown from a 2.0 wt% Al 2 O 3 target with a thickness of approximately 1 µm showed a very low resistivity of 6.54  ×  10 –4  Ωcm and a high optical transmittance in the visible range of 84%. Corrosion studies of the developed samples have shown very low corrosion currents (nanoamperes), very high corrosion resistances (in the order of 10 7  Ω) and very high electrochemical stability, indicating no tendency for electrochemical corrosion degradation. (paper)

  12. Evaluation of the optoelectronic properties and corrosion behavior of Al2O3-doped ZnO films prepared by dc pulsed magnetron sputtering

    Science.gov (United States)

    Zubizarreta, C.; Berasategui, E. G.; Bayón, R.; Escobar Galindo, R.; Barros, R.; Gaspar, D.; Nunes, D.; Calmeiro, T.; Martins, R.; Fortunato, E.; Barriga, J.

    2014-12-01

    The main requirements for transparent conducting oxide (TCO) films acting as electrodes are a high transmission rate in the visible spectral region and low resistivity. However, in many cases, tolerance to temperature and humidity exposure is also an important requirement to be fulfilled by the TCOs to assure proper operation and durability. Besides improving current encapsulation methods, the corrosion resistance of the developed TCOs must also be enhanced to warrant the performance of optoelectronic devices. In this paper the performance of aluminum-doped zinc oxide (AZO) films deposited by pulsed dc magnetron sputtering has been studied. Structure, optical transmittance/reflectance, electrical properties (resistivity, carrier concentration and mobility) and corrosion resistance of the developed coatings have been analyzed as a function of the doping of the target and the coating thickness. Films grown from a 2.0 wt% Al2O3 target with a thickness of approximately 1 µm showed a very low resistivity of 6.54  ×  10-4 Ωcm and a high optical transmittance in the visible range of 84%. Corrosion studies of the developed samples have shown very low corrosion currents (nanoamperes), very high corrosion resistances (in the order of 107 Ω) and very high electrochemical stability, indicating no tendency for electrochemical corrosion degradation.

  13. Structure, adhesive strength and electrochemical performance of nitrogen doped diamond-like carbon thin films deposited via DC magnetron sputtering.

    Science.gov (United States)

    Khun, N W; Liu, E; Krishna, M D

    2010-07-01

    Nitrogen doped diamond-like carbon (DLC:N) thin films were deposited on p-Si (100) substrates by DC magnetron sputtering with different nitrogen flow rates at a substrate temperature of about 100 degrees C. The chemical bonding structure of the films was characterized by X-ray photoelectron spectroscopy (XPS) and micro-Raman spectroscopy. The adhesive strength and surface morphology of the films were studied using micro-scratch tester and scanning electron microscope (SEM), respectively. The electrochemical performance of the films was evaluated by potentiodynamic polarization testing and linear sweep voltammetry. The electrolytes used for the electrochemical tests were deaerated and unstirred 0.47 M KCl aqueous solution for potentiodynamic polarization testing and 0.2 M KOH and 0.1 M KCl solutions for voltammetric analysis. It was found that the DLC:N films could well passivate the underlying substrates though the corrosion resistance of the films decreased with increased nitrogen content in the films. The DLC:N films showed wide potential windows in the KOH solution, in which the detection ability of the DLC:N films to trace lead of about 1 x 10(-3) M Pb(2+) was also tested.

  14. Fine control of the amount of preferential <001> orientation in DC magnetron sputtered nanocrystalline TiO2 films

    International Nuclear Information System (INIS)

    Stefanov, B; Granqvist, C G; Österlund, L

    2014-01-01

    Different crystal facets of anatase TiO 2 are known to have different chemical reactivity; in particular the {001} facets which truncates the bi-tetrahedral anatase morphology are reported to be more reactive than the usually dominant {101} facets. Anatase TiO 2 thin films were deposited by reactive DC magnetron sputtering in Ar/O 2 atmosphere and were characterized using Rietveld refined grazing incidence X-ray diffraction, atomic force microscopy and UV/Vis spectroscopy. By varying the partial O2 pressure in the deposition chamber, the degree of orientation of the grains in the film could be systematically varied with preferred <001> orientation changing from random upto 39% as determined by March-Dollase method. The orientation of the films is shown to correlate with their reactivity, as measured by photo-degradation of methylene blue in water solutions. The results have implications for fabrication of purposefully chemically reactive thin TiO 2 films prepared by sputtering methods

  15. Zn{sub x}Zr{sub y}O{sub z} thin films grown by DC magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Sanchez, O. [Instituto de Ciencia de Materiales de Madrid (CSIC), Madrid (Spain); Hernandez-Velez, M. [Departamento de Fisica Aplicada, Universidad Autonoma de Madrid (Spain)

    2017-10-15

    The structural and optical properties of thin films deposited by DC reactive magnetron co-sputtering using Zn and Zr targets in argon and oxygen gas mixtures at room temperature are reported. The power applied to the Zr cathode was kept constant, while that applied to the Zn cathode was varied between 0 and 150 W to produce very different Zn{sub x}Zr{sub y}O{sub z} ternary compounds with Zn/Zr atomic ratios in the range of 0.1-10. The composition, crystalline structure, and optical properties of the samples were determined by EDX, XRD, FTIR, and UV-visible spectroscopies. The grown films are polycrystalline, and the preferred crystallographic orientation depends on the Zn atomic concentration in the film. The optical transmission in the UV-visible range is approximately 80% in all cases, and as the Zn atomic content increases, the absorption edge shifts to longer wavelengths. The optical band gap, E{sub g}, shifted from 5.5 to 3.5 eV when the Zn/Zr atomic ratio was increased. The results indicate the potential use of these materials in optoelectronic applications. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  16. The microstructure and wettability of the TiO{sub x} films synthesized by reactive DC magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Lin Zeng [School of Mechanical Engineering and Automation, Northeastern University, Shenyang 110004 (China); State Key Laboratory of Plastic Forming Simulation and Die and Mould Technology Wuhan, Hubei 430074 (China)], E-mail: linzengsy@gmail.com; Liu Kun; Zhang Yichen; Yue Xiangji; Song Guiqiu [School of Mechanical Engineering and Automation, Northeastern University, Shenyang 110004 (China); Ba Dechun [School of Mechanical Engineering and Automation, Northeastern University, Shenyang 110004 (China)], E-mail: dechunba@yahoo.com

    2009-01-25

    Different chemical state of titanium oxide films were deposited on commercially pure Ti (CP Ti) by reactive DC magnetron sputtering under different oxygen flow rates to examine a possibility of their applications to endovascular stents. The chemical composition and crystal structure of the obtained films were analyzed by XPS and XRD, respectively. In dependence on the deposition parameters employed, the obtained films demonstrated different mixture of anatase TiO{sub 2}, Ti{sub 2}O{sub 3}, TiO and Ti. The wettability of the films was measured by the water contact angle variation. By formation of titanium oxide film on CP Ti, contact angle was decreased. In order to modify and control the surface wettability, the resultant TiO{sub x} films were etched subsequently by different plasma. The wettability was influenced by etched process according to the decreased contact angle values of etched TiO{sub x} film. Furthermore, TiO{sub x} films became highly hydrophilic by ultraviolet (UV) irradiation, and returned to the initial relatively hydrophobic state by visible-light (VIS) irradiation. The wettability of the TiO{sub x} film was enabled to convert between hydrophilic and hydrophobic reversibly by alternative UV and VIS irradiation. By adjusting deposition parameter and further modification process, the wettability of the TiO{sub x} films can be changed freely in the range of 0-90 deg.

  17. The influence of target oxygen on the YBa2Cu3O6+δ DC Magnetron sputtering process

    International Nuclear Information System (INIS)

    Larsson, G.; Selinder, T.I.; Helmersson, U

    1990-01-01

    The oxygen partial pressure and the target potential have been monitored under a range of process conditions during single target dc magnetron sputtering of Y-Ba-Cu-O. The introduced sputtering gas consisted in all but one instance of pure argon and hence the oxygen present in the plasma originated mainly from the target. During the first hours of sputtering the oxygen partial pressure was of the same magnitude as the argon pressure (3.0 Pa). As the oxygen was released from the target and subsequently removed by pumping, the target potential increased and the film composition became more stoichiometric. After 30-40 hours of sputtering the target potential and the oxygen pressure stabilized and the film composition was equal to that of the stoichiometric target. If an oxygen flow exceeding a critical level was mixed into the sputtering gas the target potential and the deposition rate decreased swiftly. This was due to target oxidation, further manifested in changing plasma and target colours. In some instances the stabilization after 'presputtering' was incomplete and oscillations in target voltage and oxygen partial pressure were observed. The fluctuations made it virtually impossible to obtain stoichiometric films. The oscillative behaviour of the sputtering process is tentatively explained by a target temperature dependent oxygen diffusion. (au)

  18. Texture of the nano-crystalline AlN thin films and the growth conditions in DC magnetron sputtering

    Directory of Open Access Journals (Sweden)

    Shakil Khan

    2015-08-01

    Full Text Available DC reactive magnetron sputtering technique has been used for the preparation of AlN thin films. The deposition temperature and the flow ratio of N2/Ar were varied and subsequent dependency of the films crystallites orientation/texture has been addressed. In general, deposited films were found hexagonal polycrystalline with a (002 preferred orientation. The X-ray diffraction (XRD data revealed that the film crystallinity improves, with the increase of substrate temperature from 300 °C to 500 °C. The dropped in full width half maximum (FWHM of the XRD rocking curve value further confirmed it. However, increasing substrate temperature above 500 °C or reducing the nitrogen condition (from 60 to 30% in the environment induced the growth of crystallites with (102 and (103 orientations. The rise of rocking curve FWHM for the corresponding conditions depicted that the films texture quality deteriorated. A further confirmation of the variation in film texture/orentation with the growth conditions has been obtained from the variation in FWHM values of a dominant E1 (TO mode in the Fourier transform infrared (FTIR spectra and the E2 (high mode in Raman spectra. We have correlated the columnar structure in AFM surface analyses with the (002 or c-axis orientation as well. Spectroscopic ellipsometry of the samples have shown a higher refractive index at 500 °C growth temperature.

  19. Synthesis and characterization of MoB2−x thin films grown by nonreactive DC magnetron sputtering

    International Nuclear Information System (INIS)

    Malinovskis, Paulius; Lewin, Erik; Jansson, Ulf; Palisaitis, Justinas; Persson, Per O. Å.

    2016-01-01

    DC magnetron sputtering was used to deposit molybdenum boride thin films for potential low-friction applications. The films exhibit a nanocomposite structure with ∼10 nm large MoB 2−x (x > 0.4) grains surrounded by a boron-rich tissue phase. The preferred formation of the metastable and substoichiometric hP3-MoB 2 structure (AlB 2 -type) is explained with kinetic constraints to form the thermodynamically stable hR18-MoB 2 phase with a very complex crystal structure. Nanoindentation revealed a relatively high hardness of (29 ± 2) GPa, which is higher than bulk samples. The high hardness can be explained by a hardening effect associated with the nanocomposite microstructure where the surrounding tissue phase restricts dislocation movement. A tribological study confirmed a significant formation of a tribofilm consisting of molybdenum oxide and boron oxide, however, without any lubricating effects at room temperature.

  20. Preparation of p-type transparent conducting tin-antimony oxide thin films by DC reactive magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Ji, Zhenguo [College of Electronic Information, Hangzhou Dianzi University, Hangzhou (China); State Key Laboratory for Silicon Materials, Zhejiang University, Hangzhou (China); Xi, Junhua; Huo, Lijuan; Zhao, Yi [State Key Laboratory for Silicon Materials, Zhejiang University, Hangzhou (China)

    2008-07-01

    P-type transparent conducting tin-antimony oxide (TAO) films were successfully prepared by DC reactive magnetron sputtering followed by post annealing in the air. Structural, optical and electrical properties of the TAO films were investigated. X-ray diffraction studies showed that the films are polycrystalline with orthorhombic structure of Sb{sub 2}O{sub 4}. UV-Visible absorption and transmittance spectra showed that the optical band-gap of the TAO films is about 3.90 eV, and the overall transmittance is higher than 85% in the visible region. Hall effect measurement indicated that the Sn/Sb ratio is a critical parameter to get p-type conducting TAO films. It was found that 0.19

  1. Synthesis and characterization of MoB{sub 2−x} thin films grown by nonreactive DC magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Malinovskis, Paulius, E-mail: paulius.malinovskis@kemi.uu.se; Lewin, Erik; Jansson, Ulf [Department of Chemistry–Ångström Laboratory, Uppsala University, SE-751 21 Uppsala (Sweden); Palisaitis, Justinas; Persson, Per O. Å. [Department of Physics, Chemistry, and Biology (IFM), Thin Film Physics Division, Linköping University, SE-581 83 Linköping (Sweden)

    2016-05-15

    DC magnetron sputtering was used to deposit molybdenum boride thin films for potential low-friction applications. The films exhibit a nanocomposite structure with ∼10 nm large MoB{sub 2−x} (x > 0.4) grains surrounded by a boron-rich tissue phase. The preferred formation of the metastable and substoichiometric hP3-MoB{sub 2} structure (AlB{sub 2}-type) is explained with kinetic constraints to form the thermodynamically stable hR18-MoB{sub 2} phase with a very complex crystal structure. Nanoindentation revealed a relatively high hardness of (29 ± 2) GPa, which is higher than bulk samples. The high hardness can be explained by a hardening effect associated with the nanocomposite microstructure where the surrounding tissue phase restricts dislocation movement. A tribological study confirmed a significant formation of a tribofilm consisting of molybdenum oxide and boron oxide, however, without any lubricating effects at room temperature.

  2. Room temperature growth of nanocrystalline anatase TiO{sub 2} thin films by dc magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Preetam, E-mail: preetamphy@gmail.co [Functional Nanomaterials Research Lab, Department of Physics and Centre of Nanotechnology, Indian Institute of Technology Roorkee, Roorkee 247667 (India); Kaur, Davinder [Functional Nanomaterials Research Lab, Department of Physics and Centre of Nanotechnology, Indian Institute of Technology Roorkee, Roorkee 247667 (India)

    2010-03-01

    We report, the structural and optical properties of nanocrystalline anatase TiO{sub 2} thin films grown on glass substrate by dc magnetron sputtering at room temperature. The influence of sputtering power and pressure over crystallinity and surface morphology of the films were investigated. It was observed that increase in sputtering power activates the TiO{sub 2} film growth from relative lower surface free energy to higher surface free energy. XRD pattern revealed the change in preferred orientation from (1 0 1) to (0 0 4) with increase in sputtering power, which is accounted for different surface energy associated with different planes. Microstructure of the films also changes from cauliflower type to columnar type structures with increase in sputtering power. FESEM images of films grown at low pressure and low sputtering power showed typical cauliflower like structure. The optical measurement revealed the systematic variation of the optical constants with deposition parameters. The films are highly transparent with transmission higher than 90% with sharp ultraviolet cut off. The transmittance of these films was found to be influenced by the surface roughness and film thickness. The optical band gap was found to decrease with increase in the sputtering power and pressure. The refractive index of the films was found to vary in the range of 2.50-2.24 with increase in sputtering pressure or sputtering power, resulting in the possibility of producing TiO{sub 2} films for device applications with different refractive index, by changing the deposition parameters.

  3. Effect of arc suppression on the physical properties of low temperature dc magnetron sputtered tantalum thin films

    International Nuclear Information System (INIS)

    Subrahmanyam, A.; Valleti, Krishna; Joshi, Srikant V.; Sundararajan, G.

    2007-01-01

    Arcing is a common phenomenon in the sputtering process. Arcs and glow discharges emit electrons which may influence the physical properties of films. This article reports the properties of tantalum (Ta) thin films prepared by continuous dc magnetron sputtering in normal and arc-suppression modes. The substrate temperature was varied in the range of 300-673 K. The tantalum films were ∼1.8 μm thick and have good adherence to 316 stainless steel and single-crystal silicon substrates. The phase of the Ta thin film determines the electrical and tribological properties. The films deposited at 300 K using both methods were crystallized in a tetragonal structure (β phase) with a smooth surface (grain size of ∼10 nm) and exhibited an electrical resistivity of ∼194 μΩ cm and a hardness of ∼20 GPa. When the substrate temperature was 473 K and higher, the arc-suppression mode appears to influence the films to crystallize in the α phase with a grain size of ∼40 nm, whereas the normal power mode gave mixed phases β and α beyond 473 K, the arc-suppression mode yields larger grain sizes in the Ta thin films and the hardness decreases. These changes in the physical properties in arc-suppression mode are attributed to either the change in plasma characteristics or the energetic particle bombardment onto the substrate, or both

  4. Design and Implementation of Digital Current Mode Controller for DC-DC Converters

    DEFF Research Database (Denmark)

    Taeed, Fazel

    to be regulated by a closed-loop controller. The Peak Current Mode Control (PCMC) is one of the most promising control methods for dc-dc converters. It has been known for high bandwidth (speed), and inherent current protection. Increasing the controller bandwidth decreases the output filter size and cost. Analog...

  5. A high current density DC magnetohydrodynamic (MHD) micropump

    NARCIS (Netherlands)

    Homsy, Alexandra; Koster, Sander; Hogen-Koster, S.; Eijkel, Jan C.T.; van den Berg, Albert; Lucklum, F.; Verpoorte, E.; de Rooij, Nico F.

    2005-01-01

    This paper describes the working principle of a DC magnetohydrodynamic (MHD) micropump that can be operated at high DC current densities (J) in 75-µm-deep microfluidic channels without introducing gas bubbles into the pumping channel. The main design feature for current generation is a micromachined

  6. A high current density DC magnetohydrodynamic (MHD) micropump

    NARCIS (Netherlands)

    Homsy, A; Koster, Sander; Eijkel, JCT; van den Berg, A; Lucklum, F; Verpoorte, E; de Rooij, NF

    2005-01-01

    This paper describes the working principle of a DC magnetohydrodynamic (MHD) micropump that can be operated at high DC current densities (J) in 75-mu m-deep microfluidic channels without introducing gas bubbles into the pumping channel. The main design feature for current generation is a

  7. Control and enhancement of the oxygen storage capacity of ceria films by variation of the deposition gas atmosphere during pulsed DC magnetron sputtering

    Science.gov (United States)

    Eltayeb, Asmaa; Vijayaraghavan, Rajani K.; McCoy, Anthony; Venkatanarayanan, Anita; Yaremchenko, Aleksey A.; Surendran, Rajesh; McGlynn, Enda; Daniels, Stephen

    2015-04-01

    In this study, nanostructured ceria (CeO2) films are deposited on Si(100) and ITO coated glass substrates by pulsed DC magnetron sputtering using a CeO2 target. The influence on the films of using various gas ambients, such as a high purity Ar and a gas mixture of high purity Ar and O2, in the sputtering chamber during deposition are studied. The film compositions are studied using XPS and SIMS. These spectra show a phase transition from cubic CeO2 to hexagonal Ce2O3 due to the sputtering process. This is related to the transformation of Ce4+ to Ce3+ and indicates a chemically reduced state of CeO2 due to the formation of oxygen vacancies. TGA and electrochemical cyclic voltammetry (CV) studies show that films deposited in an Ar atmosphere have a higher oxygen storage capacity (OSC) compared to films deposited in the presence of O2. CV results specifically show a linear variation with scan rate of the anodic peak currents for both films and the double layer capacitance values for films deposited in Ar/O2 mixed and Ar atmosphere are (1.6 ± 0.2) × 10-4 F and (4.3 ± 0.5) × 10-4 F, respectively. Also, TGA data shows that Ar sputtered samples have a tendency to greater oxygen losses upon reduction compared to the films sputtered in an Ar/O2 mixed atmosphere.

  8. Preliminary study of CdTe and CdTe:Cu thin films nanostructures deposited by using DC magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Marwoto, Putut; Made, D. P. Ngurah; Sugianto [Departement of Physics, Faculty of Mathematics and Natural Sciences, Universitas Negeri Semarang, Gunungpati, Semarang 50229 Jawa Tengah (Indonesia); Wibowo, Edy; Astuti, Santi Yuli; Aryani, Nila Prasetya [Materials Research Group, Laboratory of Thin Film, Department of Physics, Universitas Negeri Semarang, Gunungpati, Semarang 50229 Jawa Tengah (Indonesia); Othaman, Zulkafli [Departement of Physics, Universiti Teknologi Malaysia (UTM), Skudai, Johor Bahru (Malaysia)

    2013-09-03

    Growth and properties of CdTe and CdTe:Cu thin films nanostrucures deposited by using dc magnetron sputtering are reported. Scanning electron microscope (SEM) was used to observe the surface morphologies of the thin films. At growth conditions of 250 °C and 14 W, CdTe films did not yet evenly deposited. However, at growth temperature and plasma power of 325 °C and 43 W, both CdTe and CdTe:Cu(2%) have deposited on the substrates. In this condition, the morphology of the films indicate that the films have a grain-like nanostructures. Grain size diameter of about 200 nm begin to appear on top of the films. Energy Dispersive X-rays spectroscopy (EDX) was used to investigate chemical elements of the Cu doped CdTe film deposited. It was found that the film deposited consist of Cd, Te and Cu elements. XRD was used to investigate the full width at half maximum (FWHM) values of the thin films deposited. The results show that CdTe:Cu(2%) thin film has better crystallographic properties than CdTe thin film. The UV-Vis spectrometer was used to investigate the optical properties of thin films deposited. The transmittance spectra showed that transmittance of CdTe:Cu(2%) film is lower than CdTe film. It was found that the bandgap energy of CdTe and CdTe:Cu(2%) thin films of about 1.48 eV.

  9. Electrical resistivity of CuAlMo thin films grown at room temperature by dc magnetron sputtering

    Science.gov (United States)

    Birkett, Martin; Penlington, Roger

    2016-07-01

    We report on the thickness dependence of electrical resistivity of CuAlMo films grown by dc magnetron sputtering on glass substrates at room temperature. The electrical resistance of the films was monitored in situ during their growth in the thickness range 10-1000 nm. By theoretically modelling the evolution of resistivity during growth we were able to gain an insight into the dominant electrical conduction mechanisms with increasing film thickness. For thicknesses in the range 10-25 nm the electrical resistivity is found to be a function of the film surface roughness and is well described by Namba’s model. For thicknesses of 25-40 nm the experimental data was most accurately fitted using the Mayadas and Shatkes model which accounts for grain boundary scattering of the conduction electrons. Beyond 40 nm, the thickness of the film was found to be the controlling factor and the Fuchs-Sonheimer (FS) model was used to fit the experimental data, with diffuse scattering of the conduction electrons at the two film surfaces. By combining the Fuchs and Namba (FN) models a suitable correlation between theoretical and experimental resistivity can be achieved across the full CuAlMo film thickness range of 10-1000 nm. The irreversibility of resistance for films of thickness >200 nm, which demonstrated bulk conductivity, was measured to be less than 0.03% following subjection to temperature cycles of -55 and +125 °C and the temperature co-efficient of resistance was less than ±15 ppm °C-1.

  10. Highly stable hydrogenated gallium-doped zinc oxide thin films grown by DC magnetron sputtering using H2/Ar gas

    International Nuclear Information System (INIS)

    Takeda, Satoshi; Fukawa, Makoto

    2004-01-01

    The effects of water partial pressure (P H 2 O ) on electrical and optical properties of Ga-doped ZnO films grown by DC magnetron sputtering were investigated. With increasing P H 2 O , the resistivity (ρ) of the films grown in pure Ar gas (Ar-films) significantly increased due to the decrease in both free carrier density and Hall mobility. The transmittance in the wavelength region of 300-400 nm for the films also increased with increasing P H 2 O . However, no significant P H 2 O dependence of the electrical and optical properties was observed for the films grown in H 2 /Ar gas mixture (H 2 /Ar-films). Secondary ion mass spectrometry (SIMS) and X-ray diffraction (XRD) analysis revealed that hydrogen concentration in the Ar-films increased with increasing P H 2 O and grain size of the films decreases with increasing the hydrogen concentration. These results indicate that the origin of the incorporated hydrogen is attributed to the residual water vapor in the coating chamber, and that the variation of ρ and transmittance along with P H 2 O of the films resulted from the change in the grain size. On the contrary, the hydrogen concentration in H 2 /Ar-films was almost constant irrespective of P H 2 O and the degree of change in the grain size of the films versus P H 2 O was much smaller than that of Ar-films. These facts indicate that the hydrogen primarily comes from H 2 gas and the adsorption species due to H 2 gas preferentially adsorb to the growing film surface over residual water vapor. Consequently, the effects of P H 2 O on the crystal growth are reduced

  11. The role of target-to-substrate distance on the DC magnetron sputtered zirconia thin films' bioactivity

    Energy Technology Data Exchange (ETDEWEB)

    Thaveedeetrakul, Arisara [Department of Chemical Engineering, King Mongkut' s University of Technology Thonburi, Bangkok (Thailand); Witit-anun, Nirun [Department of Physics, Burapha University, Chon Buri (Thailand); Thailand Center of Excellence in Physics, CHE, Ministry of Education, Bangkok (Thailand); Boonamnuayvitaya, Virote, E-mail: virote.boo@kmutt.ac.th [Department of Chemical Engineering, King Mongkut' s University of Technology Thonburi, Bangkok (Thailand)

    2012-01-15

    Zirconium dioxide thin films were deposited on 316L-stainless steel type substrates using DC unbalanced magnetron sputtering. The process parameter of this work was the target-to-substrate distance (d{sub t-s}), which was varied from 60 to 120 mm. The crystal structure and surface topography of zirconium dioxide thin films were characterized by X-ray diffraction (XRD) and atomic force microscopy (AFM). The results demonstrate that all of the ZrO{sub 2} thin films are composed monoclinic phase. The film sputtered at short d{sub t-s} (60 mm) shows a rather heterogeneous, uneven surface. The grain size, roughness, and thickness of thin films were decreased by increasing d{sub t-s}. The bioactivity was assessed by investigating the formation of hydroxyapatite (Ca{sub 10}(PO{sub 4}){sub 6}(OH){sub 2}) on the thin film surface soaked in simulated body fluids (SBF) for 7 days. XRD and scanning electron microscopy (SEM) were used to verify the formation of apatite layers on the samples. Bone-like apatites were formed on the surface of the ZrO{sub 2} thin film in SBF immersion experiments. A nanocrystalline hydroxyapatite (HA) with a particle size of 2-4 {mu}m was deposited. Higher crystallinity of HA on the surface was observed when the distance d{sub t-s} increased to more than 80 mm. Therefore, it seems that a d{sub t-s} greater than 80 mm is an important sputtering condition for inducing HA on the zirconia film.

  12. The structural properties of CdS deposited by chemical bath deposition and pulsed direct current magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Lisco, F., E-mail: F.Lisco@lboro.ac.uk [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire, LE11 3TU (United Kingdom); Kaminski, P.M.; Abbas, A.; Bass, K.; Bowers, J.W.; Claudio, G. [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire, LE11 3TU (United Kingdom); Losurdo, M. [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR, via Orabona 4, 70126 Bari (Italy); Walls, J.M. [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire, LE11 3TU (United Kingdom)

    2015-05-01

    Cadmium sulphide (CdS) thin films were deposited by two different processes, chemical bath deposition (CBD), and pulsed DC magnetron sputtering (PDCMS) on fluorine doped-tin oxide coated glass to assess the potential advantages of the pulsed DC magnetron sputtering process. The structural, optical and morphological properties of films obtained by CBD and PDCMS were investigated using X-ray photoelectron spectroscopy, X-ray diffraction, scanning and transmission electron microscopy, spectroscopic ellipsometry and UV-Vis spectrophotometry. The as-grown films were studied and comparisons were drawn between their morphology, uniformity, crystallinity, and the deposition rate of the process. The highest crystallinity is observed for sputtered CdS thin films. The absorption in the visible wavelength increased for PDCMS CdS thin films, due to the higher density of the films. The band gap measured for the as-grown CBD-CdS is 2.38 eV compared to 2.34 eV for PDCMS-CdS, confirming the higher density of the sputtered thin film. The higher deposition rate for PDCMS is a significant advantage of this technique which has potential use for high rate and low cost manufacturing. - Highlights: • Pulsed DC magnetron sputtering (PDCMS) of CdS films • Chemical bath deposition of CdS films • Comparison between CdS thin films deposited by chemical bath and PDCMS techniques • High deposition rate deposition for PDCMS deposition • Uniform, pinhole free CdS thin films.

  13. The structural properties of CdS deposited by chemical bath deposition and pulsed direct current magnetron sputtering

    International Nuclear Information System (INIS)

    Lisco, F.; Kaminski, P.M.; Abbas, A.; Bass, K.; Bowers, J.W.; Claudio, G.; Losurdo, M.; Walls, J.M.

    2015-01-01

    Cadmium sulphide (CdS) thin films were deposited by two different processes, chemical bath deposition (CBD), and pulsed DC magnetron sputtering (PDCMS) on fluorine doped-tin oxide coated glass to assess the potential advantages of the pulsed DC magnetron sputtering process. The structural, optical and morphological properties of films obtained by CBD and PDCMS were investigated using X-ray photoelectron spectroscopy, X-ray diffraction, scanning and transmission electron microscopy, spectroscopic ellipsometry and UV-Vis spectrophotometry. The as-grown films were studied and comparisons were drawn between their morphology, uniformity, crystallinity, and the deposition rate of the process. The highest crystallinity is observed for sputtered CdS thin films. The absorption in the visible wavelength increased for PDCMS CdS thin films, due to the higher density of the films. The band gap measured for the as-grown CBD-CdS is 2.38 eV compared to 2.34 eV for PDCMS-CdS, confirming the higher density of the sputtered thin film. The higher deposition rate for PDCMS is a significant advantage of this technique which has potential use for high rate and low cost manufacturing. - Highlights: • Pulsed DC magnetron sputtering (PDCMS) of CdS films • Chemical bath deposition of CdS films • Comparison between CdS thin films deposited by chemical bath and PDCMS techniques • High deposition rate deposition for PDCMS deposition • Uniform, pinhole free CdS thin films

  14. High Voltage Coil Current Sensor for DC-DC Converters Employing DDCC

    Directory of Open Access Journals (Sweden)

    M. Drinovsky

    2015-12-01

    Full Text Available Current sensor is an integral part of every switching converter. It is used for over-current protection, regulation and in case of multiphase converters for balancing. A new high voltage current sensor for coil-based current sensing in DC-DC converters is presented. The sensor employs DDCC with high voltage input stage and gain trimming. The circuit has been simulated and implemented in 0.35 um BCD technology as part of a multiphase DC-DC converter where its function has been verified. The circuit is able to sustain common mode voltage on the input up to 40 V, it occupies 0.387*0.345 mm2 and consumes 3.2 mW typically.

  15. Analytical evaluation of DC capacitor RMS current and voltage ...

    Indian Academy of Sciences (India)

    K S GOPALAKRISHNAN

    The sizing of the DC-link capacitor in a three-level inverter is based on the RMS current flowing through it. ... Current control; current stress; diode-clamped inverter; full-bridge inverter; half-bridge inverter; ..... leg of an NPC inverter, is simulated using MATLAB .... actual q-axis current and the actual load current change at a.

  16. Electrical Properties of DC Reactive Magnetron Sputtered ZnO:Al ...

    African Journals Online (AJOL)

    Films optical spectra were fitted with the Drude model to determine their charge carrier concentration, mobility and the alternating current (AC) resistivity. The highest values of mobility and charge carrier concentration were 8.31cm2/Vs and 2.14 x 1021cm-3 respectively. The lowest value of the AC resistivity was given by the ...

  17. Current Mode Control for LLC Series Resonant DC-to-DC Converters

    Directory of Open Access Journals (Sweden)

    Jinhaeng Jang

    2015-06-01

    Full Text Available Conventional voltage mode control only offers limited performance for LLC series resonant DC-to-DC converters experiencing wide variations in operational conditions. When the existing voltage mode control is employed, the closed-loop performance of the converter is directly affected by unavoidable changes in power stage dynamics. Thus, a specific control design optimized at one particular operating point could become unacceptable when the operational condition is varied. This paper presents a new current mode control scheme which could consistently provide good closed-loop performance for LLC resonant converters for the entire operational range. The proposed control scheme employs an additional feedback from the current of the resonant tank network to overcome the limitation of the existing voltage mode control. The superiority of the proposed current mode control over the conventional voltage mode control is verified using an experimental 150 W LLC series resonant DC-to-DC converter.

  18. Characterization of Cr-O cermet solar selective coatings deposited by using direct-current magnetron sputtering technology

    International Nuclear Information System (INIS)

    Lee, Kil Dong

    2006-01-01

    Cr-O (Cr-CrO) cermet solar selective coatings with a double cermet layer film structure were prepared by using a special direct-current (dc) magnetron sputtering technology. The typical film structure from the surface to the bottom substrate was an Al 2 O 3 anti-reflection layer on a double Cr-O cermet layer on an Al metal infrared reflection layer. The deposited Cr-O cermet solar selective coating had an absorptance of α = 0.93 - 0.95 and an emittance of ε = 0.09 - 0.10(100 .deg. C). The absorption layers of the Cr-O cermet coatings deposited on glass and silicon substrates were identified as being amorphous by using X-ray diffraction (XRD). Atomic force microscopy (AFM) showed that Cr-O cermet layers were very smooth and that their grain sizes were very small. The result of thermal stability test showed that the Cr-O cermet solar selective coating was stable for use at temperatures of under 400 .deg. C.

  19. Effect of Oxygen Partial Pressure on the Electrical and Optical Properties of DC Magnetron Sputtered Amorphous TiO2 Films

    OpenAIRE

    Chandra Sekhar, M.; Kondaiah, P.; Radha Krishna, B.; Uthanna, S.

    2013-01-01

    Titanium dioxide (TiO2) thin films were deposited on p-Si (100) and Corning glass substrates held at room temperature by DC magnetron sputtering at different oxygen partial pressures in the range 9 × 10−3–9 × 10−2 Pa. The influence of oxygen partial pressure on the structural, electrical, and optical properties of the deposited films was systematically studied. XPS studies confirmed that the film formed at an oxygen partial pressure of 6×10−2 Pa was nearly stoichiometric. TiO2 films formed at...

  20. Preparation and characterization of photocatalytic performance of hierarchical heterogeneous nanostructured ZnO/TiO2 films made by DC magnetron sputtering

    International Nuclear Information System (INIS)

    Le Phuc Quy; Vu Thi Hanh Thu

    2013-01-01

    With the aim to enhance photocatalytic properties and anti-Ecoli bacteria abilities of TiO 2 thin films; hierarchical heterogeneous nanostructured ZnO/TiO 2 (HN s ) films were deposited by DC magnetron sputtering. The obtained results showed that both the photocatalytic performance and anti-Ecoli bacteria ability of HN s films exhibited enhancement in comparison with standard TiO 2 films. This enhancement was explained due to the reduction of the electron - hole recombination and the red shift of absorption edge of the HNs films. (author)

  1. Analysis of Electric Vehicle DC High Current Conversion Technology

    Science.gov (United States)

    Yang, Jing; Bai, Jing-fen; Lin, Fan-tao; Lu, Da

    2017-05-01

    Based on the background of electric vehicles, it is elaborated the necessity about electric energy accurate metering of electric vehicle power batteries, and it is analyzed about the charging and discharging characteristics of power batteries. It is needed a DC large current converter to realize accurate calibration of power batteries electric energy metering. Several kinds of measuring methods are analyzed based on shunts and magnetic induction principle in detail. It is put forward power batteries charge and discharge calibration system principle, and it is simulated and analyzed ripple waves containing rate and harmonic waves containing rate of power batteries AC side and DC side. It is put forward suitable DC large current measurement methods of power batteries by comparing different measurement principles and it is looked forward the DC large current measurement techniques.

  2. Hetero-epitaxial growth of TiC films on MgO(001) at 100 °C by DC reactive magnetron sputtering

    International Nuclear Information System (INIS)

    Braic, M.; Zoita, N.C.; Danila, M.; Grigorescu, C.E.A.; Logofatu, C.

    2015-01-01

    Hetero-epitaxial TiC thin films were deposited at 100 °C on MgO(001) by DC reactive magnetron sputtering in a mixture of Ar and CH 4 . The 62 nm thick films were analyzed for elemental composition and chemical bonding by Auger electron spectroscopy, X-ray photoelectron spectroscopy and micro-Raman spectroscopy. The crystallographic structure investigation by high resolution X-ray diffraction revealed that the films consist of two layers: an interface partially strained epilayer with high crystalline quality, and a relaxed layer, formed by columnar grains, maintaining the epitaxial relationship with the substrate. The films presented smooth surfaces (RMS roughness ~ 0.55 nm), with circular equi-sized grains/crystallites, as observed by atomic force microscopy. The Hall measurements in Van der Pauw geometry revealed relatively high resistivity value ~ 620 μΩ cm, ascribed to electron scattering on interfaces, on grain boundaries and on different defects/dislocations. - Highlights: • Hetero-epitaxial TiC 0.84 thin films were grown on MgO(001) at 100 °C by magnetron sputtering. • 62 nm thick films were synthesized by magnetron sputtering, using Ti, Ar and CH 4 . • The film comprises a partially strained interface epilayer and a relaxed top layer. • Both layers preserve the epitaxial relationship with the substrate. • Low RMS surface roughness ~ 0.55 nm and grains with mean lateral size of ~ 38.5 nm were observed

  3. Hetero-epitaxial growth of TiC films on MgO(001) at 100 °C by DC reactive magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Braic, M. [National Institute for Optoelectronics, 409 Atomistilor St., 077125 Magurele (Romania); Zoita, N.C., E-mail: cnzoita@inoe.ro [National Institute for Optoelectronics, 409 Atomistilor St., 077125 Magurele (Romania); Danila, M. [National Institute for Research and Development in Microtechnology, 126A Erou Iancu Nicolae Blvd., 077190 Bucharest (Romania); Grigorescu, C.E.A. [National Institute for Optoelectronics, 409 Atomistilor St., 077125 Magurele (Romania); Logofatu, C. [National Institute of Materials Physics, 105 bis Atomistilor St., 077125 Magurele (Romania)

    2015-08-31

    Hetero-epitaxial TiC thin films were deposited at 100 °C on MgO(001) by DC reactive magnetron sputtering in a mixture of Ar and CH{sub 4}. The 62 nm thick films were analyzed for elemental composition and chemical bonding by Auger electron spectroscopy, X-ray photoelectron spectroscopy and micro-Raman spectroscopy. The crystallographic structure investigation by high resolution X-ray diffraction revealed that the films consist of two layers: an interface partially strained epilayer with high crystalline quality, and a relaxed layer, formed by columnar grains, maintaining the epitaxial relationship with the substrate. The films presented smooth surfaces (RMS roughness ~ 0.55 nm), with circular equi-sized grains/crystallites, as observed by atomic force microscopy. The Hall measurements in Van der Pauw geometry revealed relatively high resistivity value ~ 620 μΩ cm, ascribed to electron scattering on interfaces, on grain boundaries and on different defects/dislocations. - Highlights: • Hetero-epitaxial TiC{sub 0.84} thin films were grown on MgO(001) at 100 °C by magnetron sputtering. • 62 nm thick films were synthesized by magnetron sputtering, using Ti, Ar and CH{sub 4}. • The film comprises a partially strained interface epilayer and a relaxed top layer. • Both layers preserve the epitaxial relationship with the substrate. • Low RMS surface roughness ~ 0.55 nm and grains with mean lateral size of ~ 38.5 nm were observed.

  4. Self-assembled Au nanoparticles on heated Corning glass by dc magnetron sputtering: size-dependent surface plasmon resonance tuning

    Energy Technology Data Exchange (ETDEWEB)

    Grammatikopoulos, S.; Pappas, S. D. [University of Patras, Laboratory of High-Tech Materials, School of Engineering (Greece); Dracopoulos, V. [Hellas-Institute of Chemical Engineering and High Temperature Chemical Processes, (FORTH/ICE-HT), Foundation for Research and Technology (Greece); Poulopoulos, P., E-mail: poulop@upatras.gr [University of Patras, Laboratory of High-Tech Materials, School of Engineering (Greece); Fumagalli, P. [Freie Universitaet Berlin, Institut fuer Experimentalphysik (Germany); Velgakis, M. J.; Politis, C. [University of Patras, Laboratory of High-Tech Materials, School of Engineering (Greece)

    2013-02-15

    We report on the growth of Au nanoparticles on Corning glass by direct current magnetron sputtering and on the optical absorption of the films. The substrate temperature was kept to relatively high temperatures of 100 or 450 Degree-Sign C. This lead to the growth of Au nanoparticles instead of smooth Au films as the surface energy of Au is much larger than the one of glass. The size of the particles depended on the substrate temperature and deposition time and was shown to follow a logarithmic normal distribution function. Both, the surface plasmon resonance position and bandwidth, were found to depend upon the average particle size. The surface plasmon resonance position showed a 75 nm continuous blue shift from 14 nm down to 2.5 nm average particle size. Thus, we have shown how to tune the nanoparticle size and surface plasmon resonance of Au by varying the substrate temperature and deposition time. The experimental results are reproduced reasonably using a method which is based on the size- and wavelength-dependent complex dielectric function of Au within the framework of the Mie theory for the optical properties of metallic nanospheres.

  5. Corrosion resistance of zirconium oxynitride coatings deposited via DC unbalanced magnetron sputtering and spray pyrolysis-nitriding

    Energy Technology Data Exchange (ETDEWEB)

    Cubillos, G.I., E-mail: gcubillos@unal.edu.co [Department of Chemistry, Group of Materials and Chemical Processes, Universidad Nacional de Colombia, Av. Cra. 30 No 45-03, Bogotá (Colombia); Bethencourt, M., E-mail: manuel.bethencourt@uca.es [Department of Materials Science, Metallurgy Engineering and Inorganic Chemistry, International Campus of Excellence of the Sea - CEI-MAR, University of Cadiz, Avda. República Saharaui s/n, 11510 Puerto Real, Cádiz (Spain); Olaya, J.J., E-mail: jjolayaf@unal.edu.co [Faculty of Engineering, Group of Materials and Chemical Processes, Universidad Nacional de Colombia, Av. Cra. 30 No 45-03, Bogotá (Colombia)

    2015-02-01

    Highlights: • New ZrO{sub x}N{sub y} films were deposited on stainless steel 316L using PSY-N and UBMS. • ZrO{sub x}N{sub y} rhombohedral polycrystalline film grew with PSY-N. • Zr{sub 2}ON{sub 2} crystalline structures, mostly oriented along the (2 2 2) plane, grew with UBMS. • Layers improved corrosion behavior in NaCl media, especially those deposited by UBMS. - Abstract: ZrO{sub x}N{sub y}/ZrO{sub 2} thin films were deposited on stainless steel using two different methods: ultrasonic spray pyrolysis-nitriding (SPY-N) and the DC unbalanced magnetron sputtering technique (UBMS). Using the first method, ZrO{sub 2} was initially deposited and subsequently nitrided in an anhydrous ammonia atmosphere at 1023 K at atmospheric pressure. For UBMS, the film was deposited in an atmosphere of air/argon with a Φair/ΦAr flow ratio of 3.0. Structural analysis was carried out through X-ray diffraction (XRD), and morphological analysis was done through scanning electron microscopy (SEM) and atomic force microscopy (AFM). Chemical analysis was carried out using X-ray photoelectron spectroscopy (XPS). ZrO{sub x}N{sub y} rhombohedral polycrystalline film was produced with spray pyrolysis-nitriding, whereas using the UBMS technique, the oxynitride films grew with cubic Zr{sub 2}ON{sub 2} crystalline structures preferentially oriented along the (2 2 2) plane. Upon chemical analysis of the surface, the coatings exhibited spectral lines of Zr3d, O1s, and N1s, characteristic of zirconium oxynitride/zirconia. SEM analysis showed the homogeneity of the films, and AFM showed morphological differences according to the deposition technique of the coatings. Zirconium oxynitride films enhanced the stainless steel's resistance to corrosion using both techniques. The protective efficacy was evaluated using electrochemical techniques based on linear polarization (LP). The results indicated that the layers provide good resistance to corrosion when exposed to chloride

  6. Ultrahigh vacuum dc magnetron sputter-deposition of epitaxial Pd(111)/Al2O3(0001) thin films.

    Science.gov (United States)

    Aleman, Angel; Li, Chao; Zaid, Hicham; Kindlund, Hanna; Fankhauser, Joshua; Prikhodko, Sergey V; Goorsky, Mark S; Kodambaka, Suneel

    2018-05-01

    Pd(111) thin films, ∼245 nm thick, are deposited on Al 2 O 3 (0001) substrates at ≈0.5 T m , where T m is the Pd melting point, by ultrahigh vacuum dc magnetron sputtering of Pd target in pure Ar discharges. Auger electron spectra and low-energy electron diffraction patterns acquired in situ from the as-deposited samples reveal that the surfaces are compositionally pure 111-oriented Pd. Double-axis x-ray diffraction (XRD) ω-2θ scans show only the set of Pd 111 peaks from the film. In triple-axis high-resolution XRD, the full width at half maximum intensity Γ ω of the Pd 111 ω-rocking curve is 630 arc sec. XRD 111 pole figure obtained from the sample revealed six peaks 60°-apart at a tilt angles corresponding to Pd 111 reflections. XRD ϕ scans show six 60°-rotated 111 peaks of Pd at the same ϕ angles for 11[Formula: see text]3 of Al 2 O 3 based on which the epitaxial crystallographic relationships between the film and the substrate are determined as [Formula: see text]ǁ[Formula: see text] with two in-plane orientations of [Formula: see text]ǁ[Formula: see text] and [Formula: see text]ǁ[Formula: see text]. Using triple axis symmetric and asymmetric reciprocal space maps, interplanar spacings of out-of-plane (111) and in-plane (11[Formula: see text]) are found to be 0.2242 ± 0.0003 and 0.1591 ± 0.0003 nm, respectively. These values are 0.18% lower than 0.2246 nm for (111) and the same, within the measurement uncertainties, as 0.1588 nm for (11[Formula: see text]) calculated from the bulk Pd lattice parameter, suggesting a small out-of-plane compressive strain and an in-plane tensile strain related to the thermal strain upon cooling the sample from the deposition temperature to room temperature. High-resolution cross-sectional transmission electron microscopy coupled with energy dispersive x-ray spectra obtained from the Pd(111)/Al 2 O 3 (0001) samples indicate that the Pd-Al 2 O 3 interfaces are essentially atomically abrupt and

  7. Magnetic properties of in-plane oriented barium hexaferrite thin films prepared by direct current magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Xiaozhi; Yue, Zhenxing, E-mail: yuezhx@mail.tsinghua.edu.cn; Meng, Siqin; Yuan, Lixin [State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China)

    2014-12-28

    In-plane c-axis oriented Ba-hexaferrite (BaM) thin films were prepared on a-plane (112{sup ¯}0) sapphire (Al{sub 2}O{sub 3}) substrates by DC magnetron sputtering followed by ex-situ annealing. The DC magnetron sputtering was demonstrated to have obvious advantages over the traditionally used RF magnetron sputtering in sputtering rate and operation simplicity. The sputtering power had a remarkable influence on the Ba/Fe ratio, the hematite secondary phase, and the grain morphology of the as-prepared BaM films. Under 80 W of sputtering power, in-plane c-axis highly oriented BaM films were obtained. These films had strong magnetic anisotropy with high hysteresis loop squareness (M{sub r}/M{sub s} of 0.96) along the in-plane easy axis and low M{sub r}/M{sub s} of 0.03 along the in-plane hard axis. X-ray diffraction patterns and pole figures revealed that the oriented BaM films grew via an epitaxy-like growth process with the crystallographic relationship BaM (101{sup ¯}0)//α-Fe{sub 2}O{sub 3}(112{sup ¯}0)//Al{sub 2}O{sub 3}(112{sup ¯}0)

  8. Resonance hairpin and Langmuir probe-assisted laser photodetachment measurements of the negative ion density in a pulsed dc magnetron discharge

    Energy Technology Data Exchange (ETDEWEB)

    Bradley, James W.; Dodd, Robert; You, S.-D.; Sirse, Nishant; Karkari, Shantanu Kumar [Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool (United Kingdom); National Centre for Plasma Science and Technology, Dublin City University, Dublin 9, Republic of Ireland (Ireland); National Centre for Plasma Science and Technology, Dublin City University, Dublin 9, Republic of Ireland and Institute for Plasma Research, Bhat Gandhinagar, Gujarat (India)

    2011-05-15

    The time-resolved negative oxygen ion density n{sub -} close to the center line in a reactive pulsed dc magnetron discharge (10 kHz and 50% duty cycle) has been determined for the first time using a combination of laser photodetachment and resonance hairpin probing. The discharge was operated at a power of 50 W in 70% argon and 30% oxygen gas mixtures at 1.3 Pa pressure. The results show that the O{sup -} density remains pretty constant during the driven phase of the discharge at values typically below 5x10{sup 14} m{sup -3}; however, in the off-time, the O{sup -} density grows reaching values several times those in the on-time. This leads to the negative ion fraction (or degree of electronegativity) {alpha}=n{sub -}/n{sub e} being higher in the off phase (maximum value {alpha}{approx}1) than in the on phase ({alpha}=0.05-0.3). The authors also see higher values of {alpha} at positions close to the magnetic null than in the more magnetized region of the plasma. This fractional increase in negative ion density during the off-phase is attributed to the enhanced dissociative electron attachment of highly excited oxygen molecules in the cooling plasma. The results show that close to the magnetic null the photodetached electron density decays quickly after the laser pulse, followed by a slow decay over a few microseconds governed by the negative ion temperature. However, in the magnetized regions of the plasma, this decay is more gradual. This is attributed to the different cross-field transport rates for electrons in these two regions. The resonance hairpin probe measurements of the photoelectron densities are compared directly to photoelectron currents obtained using a conventional Langmuir probe. There is good agreement in the general trends, particularly in the off-time.

  9. Effect of Nitrogen Content on Physical and Chemical Properties of TiN Thin Films Prepared by DC Magnetron Sputtering with Supported Discharge

    Science.gov (United States)

    Kavitha, A.; Kannan, R.; Gunasekhar, K. R.; Rajashabala, S.

    2017-10-01

    Amorphous titanium nitride (TiN) thin films have been prepared on silicon (Si) and glass substrates by direct-current (DC) reactive magnetron sputtering with a supported discharge (triode). Nitrogen gas (N2) at partial pressure of 0.3 Pa, 0.4 Pa, 0.5 Pa, and 0.6 Pa was used to prepare the TiN thin films, maintaining total pressure of argon and N2 of about 0.7 Pa. The chemical, microstructural, optical, and electrical properties of the TiN thin films were systematically studied. Presence of different phases of Ti with nitrogen (N), oxygen (O2), and carbon (C) elements was revealed by x-ray photoelectron spectroscopy characterization. Increase in the nitrogen pressure from 0.3 Pa to 0.6 Pa reduced the optical bandgap of the TiN thin film from 2.9 eV to 2.7 eV. Photoluminescence study showed that TiN thin film deposited at N2 partial pressure of 0.3 Pa exhibited three shoulder peaks at 330 nm, 335 nm, and 340 nm, which disappeared when the sample was deposited with N2 partial pressure of 0.6 Pa. Increase in the nitrogen content decreased the electrical resistivity of the TiN thin film from 3200 μΩ cm to 1800 μΩ cm. Atomic force microscopy studies of the TiN thin films deposited with N2 partial pressure of 0.6 Pa showed a uniform surface pattern associated with accumulation of fine grains. The results and advantages of this method of preparing TiN thin films are also reported.

  10. A Decentralized Current-Sharing Controller Endows Fast Transient Response to Parallel DC-DC Converters

    DEFF Research Database (Denmark)

    Wang, Haojie; Han, Minxiao; Han, Renke

    2018-01-01

    This paper proposes a decentralized current-sharing control strategy to endow fast transient response to paralleled DC-DC converters systems, such as DC microgrids or distributed power systems. The proposed controller consist of two main control loops: an external voltage droop control for current......-sharing proposes and an internal current loop. The external droop control loop is designed as a voltage loop with embedded virtual impedance, which avoids the use of a slow voltage loop and a separate extra virtual impedance loop that may limit the system bandwidth. The internal current loop, thanks...... and the proposed embedded-virtual-impedance based I-V droop. In order to compare the dynamic response performances between two droop controllers, their state-space models have been developed and analyzed in this paper. The results show that the dynamic response of the I-V droop control is faster than...

  11. AC/DC current ratio in a current superimposition variable flux reluctance machine

    Science.gov (United States)

    Kohara, Akira; Hirata, Katsuhiro; Niguchi, Noboru; Takahara, Kazuaki

    2018-05-01

    We have proposed a current superimposition variable flux reluctance machine for traction motors. The torque-speed characteristics of this machine can be controlled by increasing or decreasing the DC current. In this paper, we discuss an AC/DC current ratio in the current superimposition variable flux reluctance machine. The structure and control method are described, and the characteristics are computed using FEA in several AC/DC ratios.

  12. The importance of an external circuit in a particle-in-cell/Monte Carlo collisions model for a direct current planar magnetron

    International Nuclear Information System (INIS)

    Bultinck, E.; Kolev, I.; Bogaerts, A.; Depla, D.

    2008-01-01

    In modeling direct current (dc) discharges, such as dc magnetrons, a current-limiting device is often neglected. In this study, it is shown that an external circuit consisting of a voltage source and a resistor is inevitable in calculating the correct cathode current. Avoiding the external circuit can cause the current to converge (if at all) to a wrong volt-ampere regime. The importance of this external circuit is studied by comparing the results with those of a model without current-limiting device. For this purpose, a 2d3v particle-in-cell/Monte Carlo collisions model was applied to calculate discharge characteristics, such as cathode potential and current, particle fluxes and densities, and potential distribution in the plasma. It is shown that the calculated cathode current is several orders of magnitude lower when an external circuit is omitted, leading to lower charged particle fluxes and densities, and a wider plasma sheath. Also, it was shown, that only simulations with external circuit can bring the cathode current into a certain plasma regime, which has its own typical properties. In this work, the normal and abnormal regimes were studied

  13. Effect of N{sub 2} flow rate on the properties of N doped TiO{sub 2} films deposited by DC coupled RF magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Peng, Shou [State Key Laboratory of Silicate Materials for Architectures, Wuhan University of Technology, Wuhan 430000 (China); State Key Laboratory of Advanced Technology for Float Glass, Bengbu Design & Research Institute for Glass Industry, Bengbu 233000 (China); Yang, Yong, E-mail: 88087113@163.com [State Key Laboratory of Advanced Technology for Float Glass, Bengbu Design & Research Institute for Glass Industry, Bengbu 233000 (China); Li, Gang; Jiang, Jiwen; Jin, Kewu; Yao, TingTing; Zhang, Kuanxiang [State Key Laboratory of Advanced Technology for Float Glass, Bengbu Design & Research Institute for Glass Industry, Bengbu 233000 (China); Cao, Xin [State Key Laboratory of Advanced Technology for Float Glass, Bengbu Design & Research Institute for Glass Industry, Bengbu 233000 (China); School of Materials Science and Engineering, Dalian Jiaotong University, Dalian 116000 (China); Wang, Yun; Xu, Genbao [State Key Laboratory of Advanced Technology for Float Glass, Bengbu Design & Research Institute for Glass Industry, Bengbu 233000 (China)

    2016-09-05

    N doped TiO{sub 2} films were deposited on glass substrates at room temperature using DC coupled RF magnetron sputtering with a TiO{sub 2} ceramic target. The influences of N{sub 2} flow rate on the deposition rate, crystal structure, chemical composition and band gap of the deposited films were investigated by Optical profiler, X-ray diffraction, X-ray photoelectron spectroscope and ultraviolet-visible spectrophotometer. The film growth rate gradually decreased with increasing N{sub 2} flow rate. As N{sub 2} flow rate increased, the crystallization of the films deteriorated, and the films tended to form amorphous structure. XPS analysis revealed that N dopant atoms were added at the substitutional sites into TiO{sub 2} lattice structure. FE-SEM results showed that the grain size of the film decreased and the crystallinity degraded as N{sub 2} flow rate increases. In addition, N doping caused an obvious red shift in the optical absorption edge. - Highlights: • N doped TiO{sub 2} films were deposited by DC coupled RF magnetron reactive sputtering. • As N{sub 2} flow rate increases, the crystallization of the deposited films degrades. • The higher N{sub 2} flow rate is beneficial to form more substituted N in the film. • N doping causes an obvious red shift in the absorption wavelength.

  14. Effect of N_2 flow rate on the properties of N doped TiO_2 films deposited by DC coupled RF magnetron sputtering

    International Nuclear Information System (INIS)

    Peng, Shou; Yang, Yong; Li, Gang; Jiang, Jiwen; Jin, Kewu; Yao, TingTing; Zhang, Kuanxiang; Cao, Xin; Wang, Yun; Xu, Genbao

    2016-01-01

    N doped TiO_2 films were deposited on glass substrates at room temperature using DC coupled RF magnetron sputtering with a TiO_2 ceramic target. The influences of N_2 flow rate on the deposition rate, crystal structure, chemical composition and band gap of the deposited films were investigated by Optical profiler, X-ray diffraction, X-ray photoelectron spectroscope and ultraviolet-visible spectrophotometer. The film growth rate gradually decreased with increasing N_2 flow rate. As N_2 flow rate increased, the crystallization of the films deteriorated, and the films tended to form amorphous structure. XPS analysis revealed that N dopant atoms were added at the substitutional sites into TiO_2 lattice structure. FE-SEM results showed that the grain size of the film decreased and the crystallinity degraded as N_2 flow rate increases. In addition, N doping caused an obvious red shift in the optical absorption edge. - Highlights: • N doped TiO_2 films were deposited by DC coupled RF magnetron reactive sputtering. • As N_2 flow rate increases, the crystallization of the deposited films degrades. • The higher N_2 flow rate is beneficial to form more substituted N in the film. • N doping causes an obvious red shift in the absorption wavelength.

  15. Ga-doped ZnO films deposited with varying sputtering powers and substrate temperatures by pulsed DC magnetron sputtering and their property improvement potentials

    International Nuclear Information System (INIS)

    Lee, Sanghun; Cheon, Dongkeun; Kim, Won-Jeong; Ham, Moon-Ho; Lee, Woong

    2012-01-01

    Ga-doped ZnO (GZO) transparent conductive oxide (TCO) films were deposited on glass substrates by pulsed DC magnetron sputtering with varying sputtering power and substrate temperature while fixing the Ga concentration in the sputtering target. The application of higher sputtering power by pulsed DC magnetrons sputtering at a moderate temperature of 423 K results in increased carrier concentration and mobility which accompanied improved doping efficiency and crystalline quality. Substrate temperature was found to be the more dominant parameter in controlling the electrical properties and crystallinity, while the sputtering power played synergistic auxiliary roles. Electrical and optical properties of the GZO TCO films fulfilled requirements for transparent electrodes, despite relatively low substrate temperature (423 K) and small thickness (100 nm). In an attempt to improve the electrical properties of the GZO films by hydrogen-treatment, it was observed that the substitutional Ga plays the complex role of carrier generator as donor and carrier suppressor deactivating the oxygen vacancy simultaneously, which would complicate the property improvement by increasing doping efficiency.

  16. Design and implementation of current fed DC-DC converter for PHEV application using renewable source

    Science.gov (United States)

    Milind Metha, Manish; Tutki, Sanjay; Rajan, Aju; Elangovan, D.; Arunkumar, G.

    2017-11-01

    As the fossil fuels are depleting day by day, the use of renewable energy sources came into existence and they evolved a lot lately. To increase efficiency and productivity in the hybrid vehicles, the existence less efficient petroleum and diesel IC engines need to be replaced with the new and efficient converters with renewable energy sources. This has to be done in such a way that impacts three factors mainly: cost, efficiency and reliability. The PHEVs that have been launched and the upcoming PHEVs using converters with voltage range around 380V to 400V generated with power ranges between 2.4KW to 2.8KW. The basic motto of this paper is to design a prolific converter while considering the factor such as cost and size. In this paper, a two stage DC-DC converter is proposed and the proposed DC-DC converter is utilized to endeavour voltage from 24V (photovoltaic source) to a yield voltage of 400V and to meet the power demand of 250W, since only one panel is being used for this proposed paper. This paper discuss in detail about why and how the current fed DC-DC converter is utilized along with a voltage doubler, thus reducing transformer turns and thereby reducing overall size of the product. Simulation and hardware results have been presented along with calculations for duty cycle required for firing sequence for different values of transformer turns.

  17. High performance W-AIN cermet solar coatings designed by modelling calculations and deposited by DC magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Qi-Chu Zhang [The University of Sydney (Australia). School of Physics; Shen, Y.G. [City University of Hong Kong (Hong Kong). Department of Manufacturing Engineering and Engineering Management

    2004-01-25

    High solar performance W-AIN cermet solar coatings were designed using a numerical computer model and deposited experimentally. In the numerical calculations aluminium oxynitride (AlON) was used as ceramic component. The dielectric functions and then complex refractive index of W-AlON cermet materials were calculated using the Sheng's approximation. The layer thickness and W metal volume fraction were optimised to achieve maximum photo-thermal conversion efficiency for W-AlON cermet solar coatings on an Al reflector with a surface AlON ceramic anti-reflection layer. Optimisation calculations show that the W-AlON cermet solar coatings with two and three cermet layers have nearly identical solar absorptance, emittance and photo-thermal conversion efficiency that are much better than those for films with one cermet layer. The optimised calculated AlON/W-AlON/Al solar coating film with two cermet layers has a high solar absorptance of 0.953 and a low hemispherical emittance of 0.051 at 80{sup o}C for a concentration factor of 2. The AlN/W-AlN/Al solar selective coatings with two cermet layers were deposited using two metal target direct current magnetron sputtering technology. During the deposition of W-AlN cermet layer, both Al and W targets were run simultaneously in a gas mixture of argon and nitrogen. By substrate rotation a multi-sub-layer system consisting of alternating AlN ceramic and W metallic sub-layers was deposited that can be considered as a macro-homogeneous W-AlN cermet layer. A solar absorptance of 0.955 and nearly normal emittance of 0.056 at 80{sup o}C have been achieved for deposited W-AlN cermet solar coatings. (author)

  18. High performance W-AlN cermet solar coatings designed by modelling calculations and deposited by DC magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Qi-Chu [School of Physics, The University of Sydney, Sydney, NSW 2006 (Australia); Shen, Y.G. [Department of Manufacturing Engineering and Engineering Management, City University of Hong Kong (Hong Kong)

    2004-01-25

    High solar performance W-AlN cermet solar coatings were designed using a numerical computer model and deposited experimentally. In the numerical calculations aluminium oxynitride (AlON) was used as ceramic component. The dielectric function and then complex refractive index of W-AlON cermet materials were calculated using the Sheng's approximation. The layer thickness and W metal volume fraction were optimised to achieve maximum photo-thermal conversion efficiency for W-AlON cermet solar coatings on an Al reflector with a surface AlON ceramic anti-reflection layer. Optimisation calculations show that the W-AlON cermet solar coatings with two and three cermet layers have nearly identical solar absorptance, emittance and photo-thermal conversion efficiency that are much better than those for films with one cermet layer. The optimised calculated AlON/W-AlON/Al solar coating film with two cermet layers has a high solar absorptance of 0.953 and a low hemispherical emittance of 0.051 at 80C for a concentration factor of 2. The AlN/W-AlN/Al solar selective coatings with two cermet layers were deposited using two metal target direct current magnetron sputtering technology. During the deposition of W-AlN cermet layer, both Al and W targets were run simultaneously in a gas mixture of argon and nitrogen. By substrate rotation a multi-sub-layer system consisting of alternating AlN ceramic and W metallic sub-layers was deposited that can be considered as a macro-homogeneous W-AlN cermet layer. A solar absorptance of 0.955 and nearly normal emittance of 0.056 at 80C have been achieved for deposited W-AlN cermet solar coatings.

  19. Direct current magnetron sputtering deposition of InN thin films

    International Nuclear Information System (INIS)

    Cai Xingmin; Hao Yanqing; Zhang Dongping; Fan Ping

    2009-01-01

    In this paper, InN thin films were deposited on Si (1 0 0) and K9 glass by reactive direct current magnetron sputtering. The target was In metal with the purity of 99.999% and the gases were Ar (99.999%) and N 2 (99.999%). The properties of InN thin films were studied. Scanning electron microscopy (SEM) shows that the film surface is very rough and energy dispersive X-ray spectroscopy (EDX) shows that the film contains In, N and very little O. X-ray diffraction (XRD) and Raman scattering reveal that the film mainly contains hexagonal InN. The four-probe measurement shows that InN film is conductive. The transmission measurement demonstrates that the transmission of InN deposited on K9 glass is as low as 0.5% from 400 nm to 800 nm.

  20. Monitoring dc stray current corrosion at sheet pile structures

    NARCIS (Netherlands)

    Peelen, W.H.A.; Neeft, E.A.C.; Leegwater, G.; Kanten-Roos, W. van; Courage, W.M.G.

    2012-01-01

    Steel is discarded by railway owners as a material for underground structures near railway lines, due to uncertainty over increased corrosion by DC stray currents stemming from the traction power system. This paper presents a large scale field test in which stray currents interference of a sheet

  1. DC-Voltage Fluctuation Elimination Through a DC-Capacitor Current Control for DFIG Converters Under Unbalanced Grid Voltage Conditions

    DEFF Research Database (Denmark)

    Liu, Changjin; Xu, Dehong; Zhu, Nan

    2013-01-01

    Unbalanced grid voltage causes a large second-order harmonic current in the dc-link capacitors as well as dc-voltage fluctuation, which potentially will degrade the lifespan and reliability of the capacitors in voltage source converters. This paper proposes a novel dc-capacitor current control...... method for a grid-side converter (GSC) to eliminate the negative impact of unbalanced grid voltage on the dc-capacitors. In this method, a dc-capacitor current control loop, where a negative-sequence resonant controller is used to increase the loop gain, is added to the conventional GSC current control...... loop. The rejection capability to the unbalanced grid voltage and the stability of the proposed control system are discussed. The second-order harmonic current in the dc capacitor as well as dc-voltage fluctuation is very well eliminated. Hence, the dc capacitors will be more reliable under unbalanced...

  2. Turbostratic-like carbon nitride coatings deposited by industrial-scale direct current magnetron sputtering

    International Nuclear Information System (INIS)

    Louring, S.; Madsen, N.D.; Berthelsen, A.N.; Christensen, B.H.; Almtoft, K.P.; Nielsen, L.P.; Bøttiger, J.

    2013-01-01

    Carbon nitride thin films were deposited by direct current magnetron sputtering in an industrial-scale equipment at different deposition temperatures and substrate bias voltages. The films had N/(N + C) atomic fractions between 0.2 and 0.3 as determined by X-ray photoelectron spectroscopy (XPS). Raman spectroscopy provided insight into the ordering and extension of the graphite-like clusters, whereas nanoindentation revealed information on the mechanical properties of the films. The internal compressive film stress was evaluated from the substrate bending method. At low deposition temperatures the films were amorphous, whereas the film deposited at approximately 380 °C had a turbostratic-like structure as confirmed by high-resolution transmission electron microscopy images. The turbostratic-like film had a highly elastic response when subjected to nanoindentation. When a CrN interlayer was deposited between the film and the substrate, XPS and Raman spectroscopy indicated that the turbostratic-like structure was maintained. However, it was inconclusive whether the film still exhibited an extraordinary elastic recovery. An increased substrate bias voltage, without additional heating and without deposition of an interlayer, resulted in a structural ordering, although not to the extent of a turbostratic-like structure. - Highlights: • Carbon nitride films were deposited by industrial-scale magnetron sputtering. • The deposition temperature and the substrate bias voltage were varied. • A turbostratic-like structure was obtained at an elevated deposition temperature. • The turbostratic-like film exhibited a very high elastic recovery. • The influence of a CrN interlayer on the film properties was investigated

  3. Two coupled Josephson junctions: dc voltage controlled by biharmonic current

    International Nuclear Information System (INIS)

    Machura, L; Spiechowicz, J; Kostur, M; Łuczka, J

    2012-01-01

    We study transport properties of two Josephson junctions coupled by an external shunt resistance. One of the junctions (say, the first) is driven by an unbiased ac current consisting of two harmonics. The device can rectify the ac current yielding a dc voltage across the first junction. For some values of coupling strength, controlled by an external shunt resistance, a dc voltage across the second junction can be generated. By variation of system parameters such as the relative phase or frequency of two harmonics, one can conveniently manipulate both voltages with high efficiency, e.g. changing the dc voltages across the first and second junctions from positive to negative values and vice versa. (paper)

  4. ZnO film deposition by DC magnetron sputtering: Effect of target configuration on the film properties

    Energy Technology Data Exchange (ETDEWEB)

    Arakelova, E.; Khachatryan, A.; Kteyan, A.; Avjyan, K.; Grigoryan, S.

    2016-08-01

    Ballistic transport model for target-to-substrate atom transfer during magnetron sputter deposition was used to develop zinc target (cathode) configuration that enabled growth of uniform zinc oxide films on extensive surfaces and provided reproducibility of films characteristics irrespective of the cathode wear-out. The advantage of the developed target configuration for high-quality ZnO film deposition was observed in the sputtering pressure range of 5− 50 mTorr, and in the range of cathode-to-substrate distances 7–20 cm. Characteristics of the deposited films were demonstrated by using X-ray diffraction analysis, as well as optical and electrical measurements. - Highlights: • Change of target configuration for optimization of magnetron sputtering deposition is proposed. • Improvement of ZnO film properties due to use of this target is demonstrated. • This configuration provided reproducibility of the deposited films properties.

  5. Optical emission and mass spectroscopy of plasma processes in reactive DC pulsed magnetron sputtering of aluminium oxide

    Czech Academy of Sciences Publication Activity Database

    Novotný, Michal; Bulíř, Jiří; Pokorný, Petr; Bočan, Jiří; Fitl, Přemysl; Lančok, Ján; Musil, Jindřich

    2010-01-01

    Roč. 12, č. 3 (2010), 697-700 ISSN 1454-4164 R&D Projects: GA AV ČR IAA100100718; GA AV ČR KAN400100653; GA ČR GP202/09/P324 Institutional research plan: CEZ:AV0Z10100522 Keywords : reactive magnetron sputtering * alumina * plasma spectroscopy * mass spectroscopy * optical emission spectroscopy Subject RIV: BH - Optics, Masers, Lasers Impact factor: 0.412, year: 2010

  6. Harmonic analysis of DC capacitor current in sinusoidal and space ...

    Indian Academy of Sciences (India)

    DC capacitor current in a three-level neutral-point clamped (NPC) inverter, modu- lated with ... For control of the switches in two-level and three-level inverters, numerous pulse-width mod- ..... coincide with each other, and lie on the horizontal axis in figure 5b. The loci of the ... A MATLAB code is written for the purpose. 5.

  7. High Current Planar Transformer for Very High Efficiency Isolated Boost DC-DC Converters

    DEFF Research Database (Denmark)

    Pittini, Riccardo; Zhang, Zhe; Andersen, Michael A. E.

    2014-01-01

    This paper presents a design and optimization of a high current planar transformer for very high efficiency dc-dc isolated boost converters. The analysis considers different winding arrangements, including very high copper thickness windings. The analysis is focused on the winding ac-resistance a......This paper presents a design and optimization of a high current planar transformer for very high efficiency dc-dc isolated boost converters. The analysis considers different winding arrangements, including very high copper thickness windings. The analysis is focused on the winding ac......-resistance and transformer leakage inductance. Design and optimization procedures are validated based on an experimental prototype of a 6 kW dcdc isolated full bridge boost converter developed on fully planar magnetics. The prototype is rated at 30-80 V 0-80 A on the low voltage side and 700-800 V on the high voltage side...... with a peak efficiency of 97.8% at 80 V 3.5 kW. Results highlights that thick copper windings can provide good performance at low switching frequencies due to the high transformer filling factor. PCB windings can also provide very high efficiency if stacked in parallel utilizing the transformer winding window...

  8. In Situ and Ex Situ Studies of Molybdenum Thin Films Deposited by rf and dc Magnetron Sputtering as a Back Contact for CIGS Solar Cells

    Directory of Open Access Journals (Sweden)

    K. Aryal

    2012-01-01

    Full Text Available Molybdenum thin films were deposited by rf and dc magnetron sputtering and their properties analyzed with regards to their potential application as a back contact for CIGS solar cells. It is shown that both types of films tend to transition from tensile to compressive strain when the deposition pressure increases, while the conductivity and the grain size decreas. The nucleation of the films characterized by in situ and real time spectroscopic ellipsometry shows that both films follow a Volmer-Weber growth, with a higher surface roughness and lower deposition rate for the rf deposited films. The electronic relaxation time was then extracted as a function of bulk layer thickness for rf and dc films by fitting each dielectric function to a Drude free-electron model combined with a broad Lorentz oscillator. The values were fitted to a conical growth mode and demonstrated that the rf-deposited films have already smaller grains than the dc films when the bulk layer thickness is 30 nm.

  9. Effect of working pressure on corrosion behavior of nitrogen doped diamond-like carbon thin films deposited by DC magnetron sputtering.

    Science.gov (United States)

    Khun, N W; Liu, E

    2011-06-01

    Nitrogen doped diamond-like carbon thin films were deposited on highly conductive p-silicon(100) substrates using a DC magnetron sputtering deposition system by varying working pressure in the deposition chamber. The bonding structure, adhesion strength, surface roughness and corrosion behavior of the films were investigated by using X-ray photoelectron spectroscopy, micro-Raman spectroscopy, micro-scratch test, atomic force microscopy and potentiodynamic polarization test. A 0.6 M NaCl electrolytic solution was used for the corrosion tests. The optimum corrosion resistance of the films was found at a working pressure of 7 mTorr at which a good balance between the kinetics of the sputtered ions and the surface mobility of the adatoms promoted a microstructure of the films with fewer porosities.

  10. Enhancement in dye-sensitized solar cells based on MgO-coated TiO2 electrodes by reactive DC magnetron sputtering

    International Nuclear Information System (INIS)

    Wu Sujuan; Han Hongwei; Tai Qidong; Zhang Jing; Xu Sheng; Zhou Conghua; Yang Ying; Hu Hao; Chen Bolei; Sebo, Bobby; Zhao Xingzhong

    2008-01-01

    A surface modification method was carried out by reactive DC magnetron sputtering to fabricate TiO 2 electrodes coated with insulating MgO for dye-sensitized solar cells. The MgO-coated TiO 2 electrode had been characterized by x-ray photoelectron spectroscopy (XPS), energy-dispersive x-ray spectroscopy (EDX), scanning electron microscopy (SEM), UV-vis spectrophotometer, cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS). The study results revealed that the TiO 2 modification increases dye adsorption, decreases trap states and suppresses interfacial recombination. The effects of sputtering MgO for different times on the performance of DSSCs were investigated. It indicated that sputtering MgO for 3 min on TiO 2 increases all cell parameters, resulting in increasing efficiency from 6.45% to 7.57%

  11. Investigation of physical properties and surface morphology of Cu nanolayer deposited on glass and (Al, Fe) thin films by DC magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Eslami, P.A. [Islamic Azad Univ., North Tehran (Iran, Islamic Republic of). Dept. of Chemistry; Islamic Azad Univ., Tabriz (Iran, Islamic Republic of). Dept. of Science-Applied Chemistry; Laheghi, S.N.; Ghoranneviss, M. [Islamic Azad Univ., Tehran (Iran, Islamic Republic of). Plasma Research Center; Moradi, S. [Islamic Azad Univ., Tehran (Iran, Islamic Republic of). Dept. of Chemistry; Aberumand, P. [Islamic Azad Univ., Tehran (Iran, Islamic Republic of). Science and Research Laboratory Complex

    2008-07-01

    The applications for copper (Cu) thin films with micro or nanostructural dimensions range from catalysis to microelectronic devices. This paper reported on a study in which DC magnetron sputtering was used to coat iron (Fe), copper (Cu) and aluminum (Al) on glass substrate under a particular voltage, time and optimized deposition pressure. The samples were then coated with Cu using the same technique in preparation of different multilayers. Physical properties such as transmission and reflection per cent, magnetic and electrical properties, size and surface morphology were analyzed using data from AFM, XRD, SEM, Four point probe, and magneto resistive spectrophotometers. The study showed that the size, surface morphology and some physical properties of Cu nanolayer depend on substrate materials, surface morphology and physical properties below the nanolayer. Future work will focus on chemical properties such as catalytic and electrochemical properties. Copper nanoparticles will also be synthesized on other materials such as ZnO. 14 refs., 1 tab., 3 figs.

  12. Measurement of deposition rate and ion energy distribution in a pulsed dc magnetron sputtering system using a retarding field analyzer with embedded quartz crystal microbalance.

    Science.gov (United States)

    Sharma, Shailesh; Gahan, David; Scullin, Paul; Doyle, James; Lennon, Jj; Vijayaraghavan, Rajani K; Daniels, Stephen; Hopkins, M B

    2016-04-01

    A compact retarding field analyzer with embedded quartz crystal microbalance has been developed to measure deposition rate, ionized flux fraction, and ion energy distribution arriving at the substrate location. The sensor can be placed on grounded, electrically floating, or radio frequency (rf) biased electrodes. A calibration method is presented to compensate for temperature effects in the quartz crystal. The metal deposition rate, metal ionization fraction, and energy distribution of the ions arriving at the substrate location are investigated in an asymmetric bipolar pulsed dc magnetron sputtering reactor under grounded, floating, and rf biased conditions. The diagnostic presented in this research work does not suffer from complications caused by water cooling arrangements to maintain constant temperature and is an attractive technique for characterizing a thin film deposition system.

  13. Preparation of Ga-doped ZnO films by pulsed dc magnetron sputtering with cylindrical rotating target for thin film solar cell applications

    International Nuclear Information System (INIS)

    Shin, Beom-Ki; Lee, Tae-Il; Park, Ji-Hyeon; Park, Kang-Il; Ahn, Kyung-Jun; Park, Sung-Kee; Lee, Woong; Myoung, Jae-Min

    2011-01-01

    Applicability of Ga-doped ZnO (GZO) films for thin film solar cells (TFSCs) was investigated by preparing GZO films via pulsed dc magnetron sputtering (PDMS) with rotating target. The GZO films showed improved crystallinity and increasing degree of Ga doping with increasing thickness to a limit of 1000 nm. The films also fulfilled requirements for the transparent electrodes of TFSCs in terms of electrical and optical properties. Moreover, the films exhibited good texturing potential based on etching studies with diluted HCl, which yielded an improved light trapping capability without significant degradation in electrical propreties. It is therefore suggested that the surface-textured GZO films prepared via PDMS and etching are promising candidates for indium-free transparent electrodes for TFSCs.

  14. Preparation of Ga-doped ZnO films by pulsed dc magnetron sputtering with cylindrical rotating target for thin film solar cell applications

    Science.gov (United States)

    Shin, Beom-Ki; Lee, Tae-Il; Park, Ji-Hyeon; Park, Kang-Il; Ahn, Kyung-Jun; Park, Sung-Kee; Lee, Woong; Myoung, Jae-Min

    2011-11-01

    Applicability of Ga-doped ZnO (GZO) films for thin film solar cells (TFSCs) was investigated by preparing GZO films via pulsed dc magnetron sputtering (PDMS) with rotating target. The GZO films showed improved crystallinity and increasing degree of Ga doping with increasing thickness to a limit of 1000 nm. The films also fulfilled requirements for the transparent electrodes of TFSCs in terms of electrical and optical properties. Moreover, the films exhibited good texturing potential based on etching studies with diluted HCl, which yielded an improved light trapping capability without significant degradation in electrical propreties. It is therefore suggested that the surface-textured GZO films prepared via PDMS and etching are promising candidates for indium-free transparent electrodes for TFSCs.

  15. Low resistivity of Ni–Al co-doped ZnO thin films deposited by DC magnetron sputtering at low sputtering power

    Energy Technology Data Exchange (ETDEWEB)

    Lee, JongWoo [Department of Materials Science and Engineering, Pusan National University, San 30 Jangjeon-dong, Geumjeong-gu, Busan 609-735 (Korea, Republic of); Hui, K.N. [Department of Mechanical Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791 (Korea, Republic of); Hui, K.S., E-mail: kshui@hanyang.ac.kr [Department of Mechanical Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791 (Korea, Republic of); Cho, Y.R., E-mail: yescho@pusan.ac.kr [Department of Materials Science and Engineering, Pusan National University, San 30 Jangjeon-dong, Geumjeong-gu, Busan 609-735 (Korea, Republic of); Chun, Ho-Hwan [Global Core Research Center for Ships and Offshore Plants (GCRC-SOP), Pusan National University, San 30 Jangjeon-dong, Geumjeong-gu, Busan 609-735 (Korea, Republic of)

    2014-02-28

    Ni–Al co-doped ZnO (NiAl:ZnO) thin films were deposited on glass substrates by DC magnetron sputtering in Ar using a single ceramic, spark-plasma-sintered target with 2 wt% Al and 5 wt% Ni. The effects of the sputtering power and gas pressure on the NiAl:ZnO films were studied. The structural, electrical, and optical properties of the films were characterized by X-ray diffraction, field emission scanning electron microscopy, Hall effect measurements and UV–vis transmission spectroscopy. As the sputtering power and gas pressure increased, the crystallinity, electrical properties and optical band gap of the films were improved. The NiAl:ZnO film deposited at 40 W at 6.0 mTorr had the strongest (0 0 2) XRD peak and the lowest resistivity of approximately 2.19 × 10{sup −3} Ω cm with an optical transmittance of 90%.

  16. Measurement of deposition rate and ion energy distribution in a pulsed dc magnetron sputtering system using a retarding field analyzer with embedded quartz crystal microbalance

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, Shailesh, E-mail: shailesh.sharma6@mail.dcu.ie [Dublin City University, Glasnevin, Dublin 9 (Ireland); Impedans Limited, Chase House, City Junction Business Park, Northern Cross, D17 AK63, Dublin 17 (Ireland); Gahan, David, E-mail: david.gahan@impedans.com; Scullin, Paul; Doyle, James; Lennon, Jj; Hopkins, M. B. [Impedans Limited, Chase House, City Junction Business Park, Northern Cross, D17 AK63, Dublin 17 (Ireland); Vijayaraghavan, Rajani K.; Daniels, Stephen [Dublin City University, Glasnevin, Dublin 9 (Ireland)

    2016-04-15

    A compact retarding field analyzer with embedded quartz crystal microbalance has been developed to measure deposition rate, ionized flux fraction, and ion energy distribution arriving at the substrate location. The sensor can be placed on grounded, electrically floating, or radio frequency (rf) biased electrodes. A calibration method is presented to compensate for temperature effects in the quartz crystal. The metal deposition rate, metal ionization fraction, and energy distribution of the ions arriving at the substrate location are investigated in an asymmetric bipolar pulsed dc magnetron sputtering reactor under grounded, floating, and rf biased conditions. The diagnostic presented in this research work does not suffer from complications caused by water cooling arrangements to maintain constant temperature and is an attractive technique for characterizing a thin film deposition system.

  17. Speed Control Analysis of Brushless DC Motor Based on Maximum Amplitude DC Current Feedback

    Directory of Open Access Journals (Sweden)

    Hassan M.A.A.

    2014-07-01

    Full Text Available This paper describes an approach to develop accurate and simple current controlled modulation technique for brushless DC (BLDC motor drive. The approach is applied to control phase current based on generation of quasi-square wave current by using only one current controller for the three phases. Unlike the vector control method which is complicated to be implemented, this simple current modulation technique presents advantages such as phase currents are kept in balance and the current is controlled through only one dc signal which represent maximum amplitude value of trapezoidal current (Imax. This technique is performed with Proportional Integral (PI control algorithm and triangular carrier comparison method to generate Pulse Width Modulation (PWM signal. In addition, the PI speed controller is incorporated with the current controller to perform desirable speed operation of non-overshoot response. The performance and functionality of the BLDC motor driver are verified via simulation by using MATLAB/SIMULINK. The simulation results show the developed control system performs desirable speed operation of non-overshoot and good current waveforms.

  18. Study of working pressure on the optoelectrical properties of Al–Y codoped ZnO thin-film deposited using DC magnetron sputtering for solar cell applications

    International Nuclear Information System (INIS)

    Hsu, Feng-Hao; Wang, Na-Fu; Tsai, Yu-Zen; Chuang, Ming-Chieh; Cheng, Yu-Song; Houng, Mau-Phon

    2013-01-01

    Low cost transparent conductive Al–Y codoped ZnO (AZOY) thin-films were prepared on a glass substrate using a DC magnetron sputtering technique with various working pressures in the range of 5–13 mTorr. The relationship among the structural, electrical, and optical properties of sputtered AZOY films was studied as a function of working pressure. The XRD measurements show that the crystallinity of the films degraded as the working gas pressure increased. The AZOY thin-film deposited at a working pressure of 5 mTorr exhibited the lowest electrical resistivity of 4.3 × 10 −4 Ω cm, carrier mobility of 30 cm 2 /V s, highest carrier concentration of 4.9 × 10 20 cm −3 , and high transmittance in the visible region (400–800 nm) of approximately 90%. Compared with Al doped ZnO (AZO) thin-films deposited using DC or RF magnetron sputtering methods, a high carrier mobility was observed in our AZOY thin-films. This result can be used to effectively decrease the absorption of near infrared-rays in solar cell applications. The mechanisms are attributed to the larger transition energy between Ar atoms and sputtering particles and the size compensation of the dopants. Finally, the optimal quality AZOY thin-film was used as an emitter layer (or window layer) to form AZOY/n-Si heterojunction solar cells, which exhibited a stable conversion efficiency (η) of 9.4% under an AM1.5 illumination condition.

  19. Study of working pressure on the optoelectrical properties of Al–Y codoped ZnO thin-film deposited using DC magnetron sputtering for solar cell applications

    Energy Technology Data Exchange (ETDEWEB)

    Hsu, Feng-Hao [Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, No. 1, Dasyue Road, East District, Tainan City 701, Taiwan (China); Wang, Na-Fu; Tsai, Yu-Zen; Chuang, Ming-Chieh; Cheng, Yu-Song [Department of Electronic Engineering, Cheng Shiu University, 840 Chengcing Road, Niaosong District, Kaohsiung City 833, Taiwan (China); Houng, Mau-Phon, E-mail: mphoung@eembox.ncku.edu.tw [Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, No. 1, Dasyue Road, East District, Tainan City 701, Taiwan (China)

    2013-09-01

    Low cost transparent conductive Al–Y codoped ZnO (AZOY) thin-films were prepared on a glass substrate using a DC magnetron sputtering technique with various working pressures in the range of 5–13 mTorr. The relationship among the structural, electrical, and optical properties of sputtered AZOY films was studied as a function of working pressure. The XRD measurements show that the crystallinity of the films degraded as the working gas pressure increased. The AZOY thin-film deposited at a working pressure of 5 mTorr exhibited the lowest electrical resistivity of 4.3 × 10{sup −4} Ω cm, carrier mobility of 30 cm{sup 2}/V s, highest carrier concentration of 4.9 × 10{sup 20} cm{sup −3}, and high transmittance in the visible region (400–800 nm) of approximately 90%. Compared with Al doped ZnO (AZO) thin-films deposited using DC or RF magnetron sputtering methods, a high carrier mobility was observed in our AZOY thin-films. This result can be used to effectively decrease the absorption of near infrared-rays in solar cell applications. The mechanisms are attributed to the larger transition energy between Ar atoms and sputtering particles and the size compensation of the dopants. Finally, the optimal quality AZOY thin-film was used as an emitter layer (or window layer) to form AZOY/n-Si heterojunction solar cells, which exhibited a stable conversion efficiency (η) of 9.4% under an AM1.5 illumination condition.

  20. Predictive Trailing-Edge Modulation Average Current Control in DC-DC Converters

    Directory of Open Access Journals (Sweden)

    LASCU, D.

    2013-11-01

    Full Text Available The paper investigates predictive digital average current control (PDACC in dc/dc converters using trailing-edge modulation (TEM. The study is focused on the recurrence duty cycle equation and then stability analysis is performed. It is demonstrated that average current control using trailing-edge modulation is stable on the whole range of the duty cycle and thus design problems are highly reduced. The analysis is carried out in a general manner, independent of converter topology and therefore the results can then be easily applied for a certain converter (buck, boost, buck-boost, etc.. The theoretical considerations are confirmed for a boost converter first using the MATLAB program based on state-space equations and finally with the CASPOC circuit simulation package.

  1. Characterization of Ta–Si–N coatings prepared using direct current magnetron co-sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Yung-I, E-mail: yichen@mail.ntou.edu.tw; Lin, Kun-Yi; Wang, Hsiu-Hui; Cheng, Yu-Ru

    2014-06-01

    Ta–Si–N coatings were prepared using reactive direct current magnetron co-sputtering on silicon substrates. When the sputtering powers and N{sub 2} flow ratio were varied, Ta–Si–N coatings exhibited various chemical compositions and crystalline characteristics. The high-Si-content Ta–Si–N coatings exhibited an amorphous phase in the as-deposited states, whereas the low-Si-content coatings exhibited a face-centered cubic phase or an amorphous phase depending on the N content. This study evaluated the application of amorphous Ta–Si–N coatings, such as the protective coatings on glass molding dies, in high-temperature and oxygen-containing atmospheres for longed operation durations. To explore the oxidation resistance and mechanical properties of the Ta–Si–N coatings, annealing treatments were conducted in a 1%O{sub 2}–99%Ar atmosphere at 600 °C for 4–100 h. The material characteristics and oxidation behavior of the annealed Ta–Si–N coatings were examined using atomic force microscopy, transmission electron microscopy, X-ray photoelectron spectroscopy, and a nanoindentation tester. The Si oxidized preferentially in the Ta–Si–N coatings. The in-diffusion of oxygen during 600 °C annealing was restricted by the formation of an amorphous oxide scale consisting of Si and O.

  2. Bifurcation diagram features of a dc-dc converter under current-mode control

    International Nuclear Information System (INIS)

    Ruzbehani, Mohsen; Zhou Luowei; Wang Mingyu

    2006-01-01

    A common tool for analysis of the systems dynamics when the system has chaotic behaviour is the bifurcation diagram. In this paper, the bifurcation diagram of an ideal model of a dc-dc converter under current-mode control is analysed. Algebraic relations that give the critical points locations and describe the pattern of the bifurcation diagram are derived. It is shown that these simple algebraic and geometrical relations are responsible for the complex pattern of the bifurcation diagrams in such circuits. More explanation about the previously observed properties and introduction of some new ones are exposited. In addition, a new three-dimensional bifurcation diagram that can give better imagination of the parameters role is introduced

  3. Role of adsorbates on current fluctuations in DC field emission

    International Nuclear Information System (INIS)

    Luong, M.; Bonin, B.; Long, H.; Safa, H.

    1996-01-01

    Field emission experiments in DC regime usually show important current fluctuations for a fixed electric field. These fluctuations are attributed to adsorbed layers (molecules or atoms), liable to affect the work function, height and shape of the potential barrier binding the electron in the metal. The role of these adsorbed species is investigated by showing that the field emission from a well desorbed sample is stable and reproducible and by comparing the emission from the same sample before and after desorption. (author)

  4. Study of sterilization-treatment in pure and N- doped carbon thin films synthesized by inductively coupled plasma assisted pulsed-DC magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Javid, Amjed [Center for Advanced Plasma Surface Technology (CAPST), NU-SKKU Joint Institute for Plasma Nano-Materials (IPNM), Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Department of Textile Processing, National Textile University, Faisalabad 37610 (Pakistan); Kumar, Manish, E-mail: manishk@skku.edu [Center for Advanced Plasma Surface Technology (CAPST), NU-SKKU Joint Institute for Plasma Nano-Materials (IPNM), Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Han, Jeon Geon, E-mail: hanjg@skku.edu [Center for Advanced Plasma Surface Technology (CAPST), NU-SKKU Joint Institute for Plasma Nano-Materials (IPNM), Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)

    2017-01-15

    Highlights: • Pure and N-doped nanocrystallie carbon films are synthesized by ICP assisted pulsed DC plasma process. • ICP power induces the increase in average graphitic crystallite size from 4.86 nm to 6.42 nm. • Beneficial role of ICP source assistance to achieve high sputtering throughput (deposition rate ∼55 nm/min). • Post-sterilization electron-transport study shows N-doped carbon films having promising stability. - Abstract: Electrically-conductive nanocrystalline carbon films, having non-toxic and non-immunogenic characteristics, are promising candidates for reusable medical devices. Here, the pure and N- doped nanocrystalline carbon films are deposited by the assistance of inductively coupled plasma (ICP) in an unbalanced facing target pulsed-DC magnetron sputtering process. Through the optical emission spectroscopy study, the role of ICP assistance and N-doping on the reactive components/radicals during the synthesis is presented. The N-doping enhances the three fold bonding configurations by increasing the ionization and energies of the plasma species. Whereas, the ICP addition increases the plasma density to control the deposition rate and film structure. As a result, sputtering-throughput (deposition rate: 31–55 nm/min), electrical resistivity (4–72 Ωcm) and water contact angle (45.12°–54°) are significantly tailored. Electric transport study across the surface microchannel confirms the superiority of N-doped carbon films for sterilization stability over the undoped carbon films.

  5. FCL: A solution to fault current problems in DC networks

    International Nuclear Information System (INIS)

    Cointe, Y; Tixador, P; Villard, C

    2008-01-01

    Within the context of the electric power market liberalization, DC networks have many interests compared to AC ones. New energy landscapes open the way of a diversified production. Innovative interconnection diagrams, in particular using DC buses, are under development. In this case it is not possible to defer the fault current interruption in the AC side. DC fault current cutting remains a difficult problem. FCLs (Fault Current Limiters) enable to limit the current to a preset value, lower than the theoretical short-circuit current. For this application Coated Conductors (CC) offer an excellent opportunity. Due to these promising characteristics we build a test bench and work on the implementation of these materials. The test bench is composed by 10 power amplifiers, to reach 4 kVA in many configurations of current and voltage. We carried out limiting experiments on DyBaCuO CC from EHTS, samples are about five centimeters long and many potential measuring points are pasted on the shunt to estimate the quench homogeneity. Thermal phenomena in FCLs are essential, numerical models are important to calculate the maximum temperatures. To validate these models we measure the CC temperature by depositing thermal sensors (Cu resistance) above the shunt layer and the substrate. An electrical insulation with a low thermal resistivity between the CC and the sensors is necessary. We use a thin layer of Parylene because of its good mechanical and electrical insulation properties at low temperature. The better quench behaviour of CC for temperatures close to the critical temperature has been confirmed. The measurements are in good agreement with simulations, this validates the thermal models

  6. Method to predetermine current/power flow change in a dc grid

    DEFF Research Database (Denmark)

    2017-01-01

    occurs at one of the AC/DC converters; establishing a generalized droop feedback gain matrix G; controlling current/power flow within DC grid towards predefined setpoints, by use of control law. The invention presents an analytical approach to derive the generalized feedback gain allowing......The invention relates to a method for controlling current/power flow within a power transmission system, comprising two or more interconnected converter stations. The method comprises the steps of: providing a DC admittance matrix given from the DC grid; providing a current distribution matrix...... for a number of, such as for all possible AC/DC converter outages; providing a DC bus voltage vector for the DC grid; the DC bus voltage vector being a vector containing the values of the voltage change at the AC/DC converters, measured at the AC/DC converters, before, during and after a forced current change...

  7. Structural and mechanical properties of diamond-like carbon films deposited by direct current magnetron sputtering

    International Nuclear Information System (INIS)

    Broitman, E.; Hellgren, N.; Czigany, Zs.; Twesten, R.D.; Luning, J.; Petrov, I.; Hultman, L.; Holloway, B.C.

    2003-01-01

    The microstructure, morphology, and mechanical properties of diamond-like carbon (DLC) films deposited by direct current magnetron sputtering were investigated for microelectromechanical systems applications. Film properties were found to vary markedly with the ion energy (E ion ) and ion-to-carbon flux ratio (J ion /J C ). Cross-sectional high-resolution transmission electron microscopy revealed an amorphous microstructure. However, the presence of nanometer-sized domains at E ion ∼85 eV was detected. Film stresses, σ, which were compressive in all cases, ranged from 0.5 to 3.5 GPa and depended on the flux ratio as well as ion energy. The hardness (H), Young's moduli (ε), and elastic recovery (R) increased with E ion to maximum values of H=27 GPa, ε=250 GPa, and R=68% at E ion =85 eV and J ion /J C =4.4. However, near edge x-ray absorption fine structure and electron energy-loss spectrum analysis showed that the sp 2 /sp 3 content of the films does not change with E ion or J ion /J C . The measured change in mechanical properties without a corresponding change in sp 2 /sp 3 ratio is not consistent with any previously published models. We suggest that, in the ranges 5 eV ≤E ion ≤85 eV and 1.1 ≤J ion /J C ≤6.8, the presence of defective graphite formed by subplanted C and Ar atoms has the dominant influence on the mechanical properties of DLC films

  8. Effect of High Temperature Annealing on Conduction-Type ZnO Films Prepared by Direct-Current Magnetron Sputtering

    International Nuclear Information System (INIS)

    Sun Li-Jie; He Dong-Kai; Xu Xiao-Qiu; Zhong Ze; Wu Xiao-Peng; Lin Bi-Xia; Fu Zhu-Xi

    2010-01-01

    We experimentally find that the ZnO thin films deposited by dc-magnetron sputtering have different conduction types after annealing at high temperature in different ambient. Hall measurements show that ZnO films annealed at 1100°C in N 2 and in O 2 ambient become n-type and p-type, respectively. This is due to the generation of different intrinsic defects by annealing in different ambient. X-ray photoelectron spectroscopy and photolumi-nescence measurements indicate that zinc interstitial becomes a main defects after annealing at 1100°C in N 2 ambient, and these defects play an important role for n-type conductivity of ZnO. While the ZnO films annealed at 1100°C in O 2 ambient, the oxygen antisite contributes ZnO films to p-type. (condensed matter: structure, mechanical and thermal properties)

  9. Modelling and simulation of current fed dc to dc converter for PHEV applications using renewable source

    Science.gov (United States)

    Milind Metha, Manish; Tutki, Sanjay; Rajan, Aju; Elangovan, D.; Arunkumar, G.

    2017-11-01

    With the current rate of depletion of the fossil fuel the need to switch on to the renewable energy sources is the need of the hour. Thus the need for new and efficient converters arises so as to replace the existing less efficient diesel and petroleum IC engines with renewable energy sources. The PHEVs, which have been launched in the market, and Upcoming PHEVs have converters around 380V to 400V generated with a power range between 2KW to 2.8KW. The fundamental target of this paper is to plan a productive converter keeping in mind cost and size restriction. In this paper, a two-stage dc-dc converter is proposed. The proposed converter is utilized to venture up a voltage from 24V (photovoltaic source) to a yield voltage of 400V to take care of a power demand of 2.4kW for a plug-in hybrid electric vehicle (PHEV) application considering the real time scenario of PHEV. This paper talks about in detail why the current fed converter is utilized alongside a voltage doubler thus minimizing the transformer turns thereby reducing the overall size of the final product. Simulation results along with calculation for the duty cycle of the firing sequence for different value of transformer turns are presented for a prototype unit.

  10. Large step-down DC-DC converters with reduced current stress

    International Nuclear Information System (INIS)

    Ismail, Esam H.

    2009-01-01

    In this paper, several DC-DC converters with large voltage step-down ratios are introduced. A simple modification in the output section of the conventional buck and quadratic converters can effectively extend the duty-cycle range. Only two additional components (an inductor and diode) are necessary for extending the duty-cycle range. The topologies presented in this paper show an improvement in the duty-cycle (about 40%) over the conventional buck and quadratic converters. Consequently, they are well suited for extreme step-down voltage conversion ratio applications. With extended duty-cycle, the current stress on all components is reduced, leading to a significant improvement of the system losses. The principle of operation, theoretical analysis, and comparison of circuit performances with other step-down converters is discussed regarding voltage and current stress. Experimental results of one prototype rated 40-W and operating at 100 kHz are provided in this paper to verify the performance of this new family of converters. The efficiency of the proposed converters is higher than the quadratic converters

  11. Researches on the Improvement of the Bioactivity of TiO2 Deposits, Obtained by Magnetron Sputtering - DC

    Science.gov (United States)

    Toma, B. F.; Baciu, R. E.; Bejinariu, C.; Cimpoieşu, N.; Ciuntu, B. M.; Toma, S. L.; Burduhos-Nergis, D. P.; Timofte, D.

    2018-06-01

    In this paper, layers of TiO2 were deposited, by magnetron sputtering, on a glass support. The parameters of the deposition process were kept constant except for the O2/(Ar + O2) ratio that varied on three levels. The physical and mechanical properties of the layers obtained were investigated by SEM optical microscopy, electronics, AFM and X-ray diffraction. The bioactivity of TiO2 surfaces was investigated by growing M3C3-E1 osteoblast cells produced by RIKEN Cell Bank (Japan) for a period of 5 days. The modification of the working environment in the enclosure determines both the phasic modification in the TiO2 film, respectively the amount of the anatase or rutile phase and the decrease of the average roughness of the film from 112.3nm to 56.7nm. The research has demonstrated that the finer layers with a high content of anatase promote the growth of M3C3-E1 cells.

  12. Current control of the electron beam formed in the magnetron gun with a secondary-emission cathode

    International Nuclear Information System (INIS)

    Dovbnya, A.N.; Reshetnyak, N.G.; Zakutin, V.V.; Chertishchev, I.A.; Romas'ko, V.P.; Dovbnyan, N.A.

    2013-01-01

    Data are reported on electron beam generation and beam current control in two types of secondary-emission cathode magnetron guns. The influence of the magnetic field value and field distribution on the formation of the beam and its parameters has been investigated in the electron energy range between 20 and 150 keV. The influence of local magnetic field variations on the cathode and the electron beam characteristics has been studied. The possibility to control the electron beam current in various ways has been demonstrated

  13. Design and implementation of a bidirectional current-controlled voltage-regulated DC-DC switched-mode converter

    CSIR Research Space (South Africa)

    Coetzer, A

    2016-01-01

    Full Text Available The design and implementation of a bidirectional current-controlled voltage-regulated DC-DC converter is presented. The converter is required to connect a battery of electrochemical cells (the battery) to an asynchronous motor-drive unit via a...

  14. A Novel Dual-input Isolated Current-Fed DC-DC Converter for Renewable Energy System

    DEFF Research Database (Denmark)

    Zhang, Zhe; Thomsen, Ole Cornelius; Andersen, Michael A. E.

    2010-01-01

    In this paper, a novel isolated current-fed DC-DC converter (boost-type) with two input power sources based on multi-transformer structure, which is suitable for fuel cells and super-capacitors hybrid energy system, is proposed and designed. With particular transformer windings connection strategy...

  15. Current transfer in dc non-transferred arc plasma torches

    International Nuclear Information System (INIS)

    Ghorui, S; Sahasrabudhe, S N; Das, A K

    2010-01-01

    Fundamentals of current transfer to the anodes in dc non-transferred arc plasma torches are investigated. Specially designed anodes made of three mutually isolated sections and external dc axial magnetic fields of various strengths are utilized to explore the conditions for different diffused and constricted attachments of the arc with the anode. A number of new facts are revealed in the exercise. Under constricted attachment, formation of arc root takes place. Spontaneous and magnetically induced movements of the arc root, their dependence on the arc current and the strength of the external magnetic field, most probable arc root velocity, variation of the root velocity with strength of the applied magnetic field, the effect of swirl on the rotational speed of the arc root are some of the important features investigated. Two new techniques are introduced: one for measurement of the arc root diameter and the other for determination of the negative electric field in the boundary layer over the anode. While the first one exploits the rigid column behaviour of the arcs, the second one utilizes the shooting back of the residual electrons over an arc spot. Sample calculations are provided.

  16. Influences of the RF power ratio on the optical and electrical properties of GZO thin films by DC coupled RF magnetron sputtering at room temperature

    Energy Technology Data Exchange (ETDEWEB)

    Peng, Shou [State Key Laboratory of Advanced Technology for Float Glass, Bengbu 233018 (China); Bengbu Design & Research Institute for Glass Industry, Bengbu 233018 (China); Yao, Tingting, E-mail: yaott0815@163.com [State Key Laboratory of Advanced Technology for Float Glass, Bengbu 233018 (China); Bengbu Design & Research Institute for Glass Industry, Bengbu 233018 (China); Yang, Yong; Zhang, Kuanxiang; Jiang, Jiwen; Jin, Kewu; Li, Gang; Cao, Xin; Xu, Genbao; Wang, Yun [State Key Laboratory of Advanced Technology for Float Glass, Bengbu 233018 (China); Bengbu Design & Research Institute for Glass Industry, Bengbu 233018 (China)

    2016-12-15

    Ga-doped zinc oxide (GZO) thin films were deposited by closed field unbalanced DC coupled RF magnetron sputtering system at room temperature. The RF sputtering power ratio was adjusted from 0% to 100%. The crystal structure, surface morphology, transmittance and electrical resistivity of GZO films mainly influenced by RF sputtering power ratio were investigated by X-ray diffractometer, scanning electronic microscope, ultraviolet-visible spectrophotometer and Hall effect measurement. The research results indicate that the increasing RF power ratio can effectively reduce the discharge voltage of system and increase the ionizing rate of particles. Meanwhile, the higher RF power ratio can increase the carrier mobility in GZO thin film and improve the optical and electrical properties of GZO thin film significantly. Within the optimal discharge voltage window, the film deposits at 80% RF power ratio exhibits the lowest resistivity of 2.6×10{sup −4} Ω cm. We obtain the GZO film with the best average optical transmittance is approximately 84% in the visible wavelength. With the increasing RF power ratio, the densification of GZO film is enhanced. The densification of GZO film is decrease when the RF power ratio is 100%.

  17. THE EFFECT OF PRESSURE, BIAS VOLTAGE AND ANNEALING TEMPERATURE ON N₂ AND N₂+SiH₄ DOPED WC/C DC MAGNETRON SPUTTERED LAYERS

    Directory of Open Access Journals (Sweden)

    Peter Hornak

    2017-12-01

    Full Text Available Tungsten carbide (WC/C layers are often researched due to their outstanding mechanical and tribological properties. Here, optimized indented hardness (HIT, indentation modulus (EIT and coefficient of friction (COF values were measured to study the effect of pressure and bias voltage on WC/C layers, deposited on Si by DC magnetron spluttering. Maximal values of HIT=37.2±4.8 GPa, EIT=447±28 GPa and COF=0.64±0.09 were obtained. Additionally, the effect of temperature on optimized layers deposited with and without N₂ and N₂+SiH₄ annealed at 200 °C, 500 °C and 800 °C, were also investigated. The values of HIT, EIT and COF and, observed morphology and structural composition of these contaminated and non-contaminated WC/C layers were evaluated. It was found that layer degradation occurred at different rates depending on the temperature and gas mixture used during the annealing and deposition process, respectively.

  18. Studies on the electrical properties of reactive DC magnetron-sputtered indium-doped silver oxide thin films: The role of oxygen

    Energy Technology Data Exchange (ETDEWEB)

    Subrahmanyam, A [Semiconductor Physics Laboratory, Department of Physics, Indian Institute of Technology Madras, Chennai 600036 (India); Barik, Ullash Kumar [Semiconductor Physics Laboratory, Department of Physics, Indian Institute of Technology Madras, Chennai 600036 (India)

    2007-03-15

    Indium ({approx}10 at.%)-doped silver oxide (AIO) thin films have been prepared on glass substrates at room temperature (300 K) by reactive DC magnetron sputtering technique using an alloy target made of pure (99.99%) silver and indium (90:10 at.%) metals. The oxygen flow rates have been varied in the range 0.00-3.44 sccm during sputtering. The X-ray diffraction data on these indium-doped silver oxide films show polycrystalline nature. With increasing oxygen flow rate, the carrier concentration, the Hall mobility and the electron mean free path decrease. These films show a very low positive temperature coefficient of resistivity {approx}3.40x10{sup -8} ohm-cm/K. The work function values for these films (measured by Kelvin probe technique) are in the range 4.81-5.07 eV. The high electrical resistivity indicate that the films are in the island state (size effects). Calculations of the partial ionic charge (by Sanderson's theory) show that indium doping in silver oxide thin films enhance the ionicity.

  19. Studies on the electrical properties of reactive DC magnetron-sputtered indium-doped silver oxide thin films: The role of oxygen

    International Nuclear Information System (INIS)

    Subrahmanyam, A.; Barik, Ullash Kumar

    2007-01-01

    Indium (∼10 at.%)-doped silver oxide (AIO) thin films have been prepared on glass substrates at room temperature (300 K) by reactive DC magnetron sputtering technique using an alloy target made of pure (99.99%) silver and indium (90:10 at.%) metals. The oxygen flow rates have been varied in the range 0.00-3.44 sccm during sputtering. The X-ray diffraction data on these indium-doped silver oxide films show polycrystalline nature. With increasing oxygen flow rate, the carrier concentration, the Hall mobility and the electron mean free path decrease. These films show a very low positive temperature coefficient of resistivity ∼3.40x10 -8 ohm-cm/K. The work function values for these films (measured by Kelvin probe technique) are in the range 4.81-5.07 eV. The high electrical resistivity indicate that the films are in the island state (size effects). Calculations of the partial ionic charge (by Sanderson's theory) show that indium doping in silver oxide thin films enhance the ionicity

  20. Temperature-dependent interface characteristic of silicon wafer bonding based on an amorphous germanium layer deposited by DC-magnetron sputtering

    Science.gov (United States)

    Ke, Shaoying; Lin, Shaoming; Ye, Yujie; Mao, Danfeng; Huang, Wei; Xu, Jianfang; Li, Cheng; Chen, Songyan

    2018-03-01

    We report a near-bubble-free low-temperature silicon (Si) wafer bonding with a thin amorphous Ge (a-Ge) intermediate layer. The DC-magnetron-sputtered a-Ge film on Si is demonstrated to be extremely flat (RMS = 0.28 nm) and hydrophilic (contact angle = 3°). The effect of the post-annealing temperature on the surface morphology and crystallinity of a-Ge film at the bonded interface is systematically identified. The relationship among the bubble density, annealing temperature, and crystallinity of a-Ge film is also clearly clarified. The crystallization of a-Ge film firstly appears at the bubble region. More interesting feature is that the crystallization starts from the center of the bubbles and sprawls to the bubble edge gradually. The H2 by-product is finally absorbed by intermediate Ge layer with crystalline phase after post annealing. Moreover, the whole a-Ge film out of the bubble totally crystallizes when the annealing time increases. This Ge integration at the bubble region leads to the decrease of the bubble density, which in turn increases the bonding strength.

  1. Synthesis of Ag-Cu-Pd alloy thin films by DC-magnetron sputtering: Case study on microstructures and optical properties

    Science.gov (United States)

    Rezaee, Sahar; Ghobadi, Nader

    2018-06-01

    The present study aims to investigate optical properties of Ag-Cu-Pd alloy thin films synthesized by DC-magnetron sputtering method. The thin films are deposited on the glass and silicon substrates using Argon gas and Ag-Cu-Pd target. XRD analysis confirms the successful growth of Ag, Cu, and Pd NPs with FCC crystalline structure. Moreover, UV-visible absorption spectroscopy is applied to determine optical properties of the prepared samples which are affected by changes in surface morphology. The existence of single surface plasmon resonance (SPR) peak near 350 nm proves the formation of silver nanoparticles with a slight red shift through increasing deposition time. Ineffective thickness method (ITM) and Derivation of ineffective thickness method (DITM) are applied to extract optical band gap and transition type via absorption spectrum. SEM and AFM analyses show the distribution of near-spherical nanoparticles covering the surface of thin films. Furthermore, thickness variation affects the grain size. In addition, TEM image reveals the uniform size distribution of nanoparticles with an average particle size of about 15 nm. The findings show that increasing grain size and crystallite order along with the decrease of structural defect and disorders decrease optical band gap from 3.86 eV to 2.58 eV.

  2. Tribological Testing, Analysis and Characterization of D.C. Magnetron Sputtered Ti-Nb-N Thin Film Coatings on Stainless Steel

    Science.gov (United States)

    Joshi, Prathmesh

    To enhance the surface properties of stainless steel, the substrate was coated with a 1μm thick coating of Ti-Nb-N by reactive DC magnetron sputtering at different N2 flow rates, substrate biasing and Nb-Ti ratio. The characterization of the coated samples was performed by the following techniques: hardness by Knoop micro-hardness tester, phase analysis by X-ray Diffraction (XRD), compositional analysis by Energy Dispersive X-ray Spectroscopy (EDS) and adhesion by scratch test. The tribology testing was performed on linearly reciprocating ball-on-plate wear testing machine and wear depth and wear volume were evaluated by white light interferometer. The micro-hardness test yielded appreciable enhancement in the surface hardness with the highest value being 1450 HK. Presence of three prominent phases namely NbN, Nb2N3 and TiN resulted from the XRD analysis. EDS analysis revealed the presence of Ti, Nb and Nitrogen. Adhesion was evaluated on the basis of critical loads for cohesive (Lc1) and adhesive (Lc2) failures with values varying between 7-12 N and 16-25 N respectively, during scratch test for coatings on SS substrates.

  3. Optical properties and thermal stability of TiAlN/AlON tandem absorber prepared by reactive DC/RF magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Barshilia, Harish C.; Selvakumar, N.; Rajam, K.S. [Surface Engineering Division, National Aerospace Laboratories, Bangalore 560 017 (India); Biswas, A. [Spectroscopy Division, Bhabha Atomic Research Center, Mumbai 400 085 (India)

    2008-11-15

    Spectrally selective TiAlN/AlON tandem absorbers were deposited on copper and stainless steel substrates using a reactive DC/RF magnetron sputtering system. The compositions and thicknesses of the individual component layers were optimized to achieve high absorptance ({alpha}=0.931-0.942) and low emittance ({epsilon}=0.05-0.06) on copper substrate. The experimental spectroscopic ellipsometric data have been fitted with the theoretical models to derive the dispersion of the optical constants (n and k). In order to study the thermal stability of the tandem absorbers, they were subjected to heat treatment (in air and vacuum) for different durations and temperatures. The tandem absorber deposited on Cu substrates exhibited high solar selectivity ({alpha}/{epsilon}) of 0.946/0.07 even after heat treatment in air up to 600 C for 2 h. At 625 C, the solar selectivity decreased significantly on Cu substrates (e.g., {alpha}/{epsilon}=0.924/0.30). The tandem absorber on Cu substrates was also stable in air up to 100 h at 400 C with a solar selectivity of 0.919/0.06. Studies on the accelerated aging tests indicated that the activation energy for the degradation of the tandem absorber is of the order of 100 kJ/mol. (author)

  4. Effect of N Concentration on Microstructure Evolution of the Nanostructured (Al, Ti, SiN Coatings Prepared by d.c. Reactive Magnetron Sputtering

    Directory of Open Access Journals (Sweden)

    L. Jakab-Farkas

    2009-12-01

    Full Text Available Nanostructured (Al, Ti, SiN thin film coatings were synthesized by d.c. reactive magnetron sputtering, performed in an Ar/N2 gas mixture from a planar rectangular Al:Ti:Si=50:25:25 alloyed target. The mass flow of N2 reactive gas was strictly controlled in sputtering process. Conventional transmission electron microscopy (TEM technique was used for microstructure investigation of the as deposited films. Cross-sectional cuts performed through the deposited films revealed distinct microstructure evolution for different samples. It was found that the variation of the reactive gas amount induced changes in film microstructure. The metallic AlTiSi film exhibited strong columnar growth with a crystalline structure. The addition of a small amount of nitrogen to the process gas leads to a crystallite refinement. Further increase of N concentration resulted in evolution of fine lamellae growth morphology consisting of hainlike pearls in a dendrite, clusters of very fine grains in close crystallographic orientation.

  5. In vitro biocompatibility of Ti-Mg alloys fabricated by direct current magnetron sputtering.

    Science.gov (United States)

    Hieda, Junko; Niinomi, Mitsuo; Nakai, Masaaki; Cho, Ken

    2015-09-01

    Ti-xMg (x=17, 33, and 55 mass%) alloy films, which cannot be prepared by conventional melting processes owing to the absence of a solid-solution phase in the phase diagram, were prepared by direct current magnetron sputtering in order to investigate their biocompatibility. Ti and Mg films were also prepared by the same process for comparison. The crystal structures were examined by X-ray diffraction (XRD) analysis and the surfaces were analyzed by X-ray photoelectron spectroscopy. The Ti, Ti-xMg alloy, and Mg films were immersed in a 0.9% NaCl solution at 310 K for 7d to evaluate the dissolution amounts of Ti and Mg. In addition, to evaluate the formation ability of calcium phosphate in vitro, the Ti, Ti-xMg alloy, and Mg films were immersed in Hanks' solution at 310 K for 30 d. Ti and Mg form solid-solution alloys because the peaks attributed to pure Ti and Mg do not appear in the XRD patterns of any of the Ti-xMg alloy films. The surfaces of the Ti-17 Mg alloy and Ti-33 Mg alloy films contain Ti oxides and MgO, whereas MgO is the main component of the surface oxide of the Ti-55 Mg alloy and Mg films. The dissolution amounts of Ti from all films are below or near the detection limit of inductively coupled plasma-optical emission spectroscopy. On the other hand, the Ti-17 Mg alloy, Ti-33 Mg alloy, Ti-55 Mg alloy, and Mg films exhibit Mg dissolution amounts of approximately 2.5, 1.4, 21, and 41 μg/cm(2), respectively. The diffraction peaks attributed to calcium phosphate are present in the XRD patterns of the Ti-33 Mg alloy, Ti-55 Mg alloy, and Mg films after the immersion in Hanks' solution. Spherical calcium phosphate particles precipitate on the surface of the Ti-33 Mg film. However, many cracks are observed in the Ti-55 Mg film, and delamination of the film occurs after the immersion in Hanks' solution. The Mg film is dissolved in Hanks' solution and calcium phosphate particles precipitate on the glass substrate. Consequently, it is revealed that the Ti-33 Mg

  6. International comparison of AC-DC current transfer standards

    Science.gov (United States)

    Heine, G.; Garcocz, M.; Waldmann, W.

    2017-01-01

    The measurements of the international comparison of ac-dc current transfer standards identified as EURAMET.EM-K12 started in June 2012 and were completed in December 2014. Twenty NMIs in the EURAMET region and one NMI in the AFRIMET region took part: BEV (Austria), CMI (Czech Republic), PTB (Germany), METAS (Switzerland), JV (Norway), UME (Turkey), GUM (Poland), IPQ (Portugal), CEM (Spain), INRIM (Italy), SP (Sweden), DANIAmet-MI-Trescal (Denmark), BIM (Bulgaria), MKEH (Hungary), SIQ (Slovenia), LNE (France), NSAI NML (Ireland), VSL (The Netherlands), NPL (United Kingdom), Metrosert (Estonia), NIS (Egypt). The comparison was proposed to link the National Metrology Institutes organised in EURAMET to the key comparison CCEM-K12. The ac-dc current transfer difference of each travelling standard had been measured at its nominal current 10 mA and 5 A at the following frequencies: 10 Hz, 55 Hz, 1 kHz, 10 kHz, 20 kHz, 50 kHz, 100 kHz. The test points were selected to link the results with the equivalent CCEM Key Comparison (CCEM-K12), through five NMIs participating in both EURAMET and CCEM key comparisons (PTB, JV, NPL, SP and BEV). The report shows the degree of equivalence in the EURAMET region and also the degree of equivalence with the corresponding CCEM reference value. Main text To reach the main text of this paper, click on Final Report. Note that this text is that which appears in Appendix B of the BIPM key comparison database kcdb.bipm.org/. The final report has been peer-reviewed and approved for publication by the CCEM, according to the provisions of the CIPM Mutual Recognition Arrangement (CIPM MRA).

  7. Vacuum interrupters used for the interruption of high dc currents

    International Nuclear Information System (INIS)

    Warren, R.W.

    1977-01-01

    Conventional ac vacuum interrupters are being used to interrupt currents in pulsed energy storage systems. They have been tested with dc currents of up to 37 kA. The limit to the current which can be successfully interrupted has been measured as a function of various parameters. Among these are (1) the size of the interrupter, (2) the magnitude of the counterpulse current, (3) the nature and flux rating of the saturable reactor used, and (4) the kind of ''snubber'' circuit used. Fragmentary data have also been collected on electrode erosion rates and on mechanical failure of the bellows. A description is given of the circuits used in these tests and of the results found for a representative selection of the commercially available domestic interrupters. More recently efforts have been made to increase the values found for the maximum interruptible current. The techniques used have included connecting interrupters in parallel and operating them in an impressed axial magnetic field. The results of this work are discussed

  8. DC feedback for wide band frequency fixed current source

    Directory of Open Access Journals (Sweden)

    Aoday Hashim Mohamad Al-Rawi

    2013-03-01

    Full Text Available Alternating current sources are mainly used in bioelectrical impedance devices. Nowadays 50 – 100 kHz bioelectrical impedance devices are commonly used for body composition analysis. High frequency bioelectrical impedance analysis devices are mostly used in bioimpedance tomography and blood analysis. High speed op-amps and voltage comparators are used in this circuit. Direct current feedback is used to prevent delay. An N-Channel J-FET transistor was used to establish the voltage controlled gain amplifier (VCG. A sine wave signal has been applied as input voltage. The value of this signal should be constant in 170 mV rms to keep the output current in about 1 mA rms. Four frequencies; 100 kHz, 1 MHz, 2 MHz and 3.2 MHz were applied to the circuit and the current was measured for different load resistances. The results showed that the current was stable for changes in the resistor load, bouncing around an average point as a result of bouncing DC feedback.

  9. Performance and scalability of isolated DC-DC converter topologies in low voltage, high current applications

    Energy Technology Data Exchange (ETDEWEB)

    Vaisanen, V.

    2012-07-01

    Fuel cells are a promising alternative for clean and efficient energy production. A fuel cell is probably the most demanding of all distributed generation power sources. It resembles a solar cell in many ways, but sets strict limits to current ripple, common mode voltages and load variations. The typically low output voltage from the fuel cell stack needs to be boosted to a higher voltage level for grid interfacing. Due to the high electrical efficiency of the fuel cell, there is a need for high efficiency power converters, and in the case of low voltage, high current and galvanic isolation, the implementation of such converters is not a trivial task. This thesis presents galvanically isolated DC-DC converter topologies that have favorable characteristics for fuel cell usage and reviews the topologies from the viewpoint of electrical efficiency and cost efficiency. The focus is on evaluating the design issues when considering a single converter module having large current stresses. The dominating loss mechanism in low voltage, high current applications is conduction losses. In the case of MOSFETs, the conduction losses can be efficiently reduced by paralleling, but in the case of diodes, the effectiveness of paralleling depends strongly on the semiconductor material, diode parameters and output configuration. The transformer winding losses can be a major source of losses if the windings are not optimized according to the topology and the operating conditions. Transformer prototyping can be expensive and time consuming, and thus it is preferable to utilize various calculation methods during the design process in order to evaluate the performance of the transformer. This thesis reviews calculation methods for solid wire, litz wire and copper foil winding losses, and in order to evaluate the applicability of the methods, the calculations are compared against measurements and FEM simulations. By selecting a proper calculation method for each winding type, the winding

  10. A ZVS PWM control strategy with balanced capacitor current for half-bridge three-level DC/DC converter

    DEFF Research Database (Denmark)

    Liu, Dong; Deng, Fujin; Chen, Zhe

    2017-01-01

    The capacitor current would be imbalanced under the conventional control strategy in the half-bridge three-level (HBTL) DC/DC converter due to the effect of the output inductance of the power supply and the input line inductance, which would affect the converter's reliability. This paper proposes...... a pulse-wide modulation (PWM) strategy composed of two operation modes for the HBTL DC/DC converter, which can realize the zero-voltage switching (ZVS) for the efficiency improvement. In addition, a capacitor current balancing control is proposed by alternating the two operation modes of the proposed ZVS...... PWM strategy, which can eliminate the current imbalance among the two input capacitors. Therefore, the proposed control strategy can improve the converter's performance and reliability in: 1) reducing the switching losses and noises of the power switches; 2) balancing the thermal stresses...

  11. Periodically Swapping Modulation (PSM) Strategy for Three-Level (TL) DC/DC Converter with Balanced Switch Currents

    DEFF Research Database (Denmark)

    Liu, Dong; Deng, Fujin; Zhang, Qi

    2018-01-01

    The asymmetrical modulation strategy is widely used in various types of three-level (TL) DC/DC converters, while the current imbalance among the power switches is one of the important issues. In this paper, a novel periodically swapping modulation (PSM) strategy is proposed for balancing the power...... switches’ currents in various types of TL DC/DC converters. In the proposed PSM strategy, the driving signals of the switch pairs are swapped periodically, which guarantees that the currents through the power switches are kept balanced in every two switching periods. Therefore, the proposed PSM...... strategy can effectively improve the reliability of the converter by balancing the power losses and thermal stresses among the power switches. The operation principle and performances of the proposed PSM strategy are analyzed in detail. Finally, the simulation and experimental results are presented...

  12. Electronic Current Transducer (ECT) for high voltage dc lines

    Science.gov (United States)

    Houston, J. M.; Peters, P. H., Jr.; Summerayes, H. R., Jr.; Carlson, G. J.; Itani, A. M.

    1980-02-01

    The development of a bipolar electronic current transducer (ECT) for measuring the current in a high voltage dc (HVDC) power line at line potential is discussed. The design and construction of a free standing ECT for use on a 400 kV line having a nominal line current of 2000 A is described. Line current is measured by a 0.0001 ohm shunt whose voltage output is sampled by a 14 bit digital data link. The high voltage interface between line and ground is traversed by optical fibers which carry digital light signals as far as 300 m to a control room where the digital signal is converted back to an analog representation of the shunt voltage. Two redundant electronic and optical data links are used in the prototype. Power to operate digital and optical electronics and temperature controlling heaters at the line is supplied by a resistively and capacitively graded 10 stage cascade of ferrite core transformers located inside the hollow, SF6 filled, porcelain support insulator. The cascade is driven by a silicon controlled rectifier inverter which supplies about 100 W of power at 30 kHz.

  13. Crystallinity, etchability, electrical and mechanical properties of Ga doped amorphous indium tin oxide thin films deposited by direct current magnetron sputtering

    International Nuclear Information System (INIS)

    Lee, Hyun-Jun; Song, Pung-Keun

    2014-01-01

    Indium tin oxide (ITO) and Ga-doped ITO (ITO:Ga) films were deposited on glass and polyimide (PI) substrates by direct current (DC) magnetron sputtering using different ITO:Ga targets (doped-Ga: 0, 0.1 and 2.9 wt.%). The films were deposited with a thickness of 50 nm and then post-annealed at various temperatures (room temperature-250 °C) in a vacuum chamber for 30 min. The amorphous ITO:Ga (0.1 wt.% Ga) films post-annealed at 220 °C exhibited relatively low resistivity (4.622x10 −4 Ω cm), indicating that the crystallinity of the ITO:Ga films decreased with increasing Ga content. In addition, the amorphous ITO:Ga films showed a better surface morphology, etchability and mechanical properties than the ITO films. - Highlights: • The Ga doped indium tin oxide (ITO) films crystallized at higher temperatures than the ITO films. • The amorphisation of ITO films increases with increasing Ga content. • Similar resistivity was observed between crystalline ITO and amorphous Ga doped ITO films. • Etching property of ITO film was improved with increasing Ga content

  14. Mechanical, tribological and corrosion properties of CrBN films deposited by combined direct current and radio frequency magnetron sputtering

    International Nuclear Information System (INIS)

    Jahodova, Vera; Ding, Xing-zhao; Seng, Debbie H.L.; Gulbinski, W.; Louda, P.

    2013-01-01

    Cr–B–N films were deposited on stainless steel substrates by a combined direct current and radio frequency (RF) reactive unbalanced magnetron sputtering process using two elemental Cr and one compound BN targets. Boron content in the as-deposited films was qualitatively analyzed by time-of-flight secondary ion mass spectroscopy. Films' microstructure, mechanical and tribological properties were characterized by X-ray diffraction, nanoindentation and pin-on-disk tribometer experiments. Corrosion behavior of the Cr–B–N films was evaluated by electrochemical potentiodynamic polarization method in a 3 wt.% NaCl solution. All the films were crystallized into a NaCl-type cubic structure. At lower RF power applied on the BN target (≤ 600 W), films are relatively randomly oriented, and films' crystallinity increased with increasing RF power. With increasing RF power further (≥ 800 W), films became (200) preferentially oriented, and films' crystallinity decreased gradually. With incorporation of a small amount of boron atoms into the CrN films, hardness, wear- and corrosion-resistance were all improved evidently. The best wear and corrosion resistance was obtained for the film deposited with 600 W RF power applied on the BN target. - Highlights: • CrBN films deposited by direct current and radio frequency magnetron sputtering. • CrBN exhibited higher hardness, wear- and corrosion-resistance than pure CrN. • The best wear- and corrosion-resistant film was deposited with 600 W RF power

  15. Step-Up Partial Power DC-DC Converters for Two-Stage PV Systems with Interleaved Current Performance

    Directory of Open Access Journals (Sweden)

    Jaime Wladimir Zapata

    2018-02-01

    Full Text Available This work presents a partial power converter allowing us to obtain, with a single DC-DC converter, the same feature as the classical interleaved operation of two converters. More precisely, the proposed topology performs similarly as the input-parallel output-series (IPOS configuration reducing the current ripple at the input of the system and dividing the individual converters power rating, compared to a single converter. The proposed topology consists of a partial DC-DC converter processing only a fraction of the total power, thus allowing high efficiency. Experimental results are provided to validate the proposed converter topology with a Flyback-based 100 W test bench with a transformer turns ratio n 1 = n 2 . Experimental results show high performances reducing the input current ripple around 30 % , further increasing the conversion efficiency.

  16. Low-temperature growth of low friction wear-resistant amorphous carbon nitride thin films by mid-frequency, high power impulse, and direct current magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Bakoglidis, Konstantinos D., E-mail: konba@ifm.liu.se; Schmidt, Susann; Garbrecht, Magnus; Ivanov, Ivan G.; Jensen, Jens; Greczynski, Grzegorz; Hultman, Lars [Department of Physics, Chemistry and Biology (IFM), Linköping University, SE-581 83 Linköping (Sweden)

    2015-09-15

    The potential of different magnetron sputtering techniques for the synthesis of low friction and wear resistant amorphous carbon nitride (a-CN{sub x}) thin films onto temperature-sensitive AISI52100 bearing steel, but also Si(001) substrates was studied. Hence, a substrate temperature of 150 °C was chosen for the film synthesis. The a-CN{sub x} films were deposited using mid-frequency magnetron sputtering (MFMS) with an MF bias voltage, high power impulse magnetron sputtering (HiPIMS) with a synchronized HiPIMS bias voltage, and direct current magnetron sputtering (DCMS) with a DC bias voltage. The films were deposited using a N{sub 2}/Ar flow ratio of 0.16 at the total pressure of 400 mPa. The negative bias voltage, V{sub s}, was varied from 20 to 120 V in each of the three deposition modes. The microstructure of the films was characterized by high-resolution transmission electron microscopy and selected area electron diffraction, while the film morphology was investigated by scanning electron microscopy. All films possessed an amorphous microstructure, while the film morphology changed with the bias voltage. Layers grown applying the lowest substrate bias of 20 V exhibited pronounced intercolumnar porosity, independent of the sputter technique. Voids closed and dense films are formed at V{sub s} ≥ 60 V, V{sub s} ≥ 100 V, and V{sub s} = 120 V for MFMS, DCMS, and HiPIMS, respectively. X-ray photoelectron spectroscopy revealed that the nitrogen-to-carbon ratio, N/C, of the films ranged between 0.2 and 0.24. Elastic recoil detection analysis showed that Ar content varied between 0 and 0.8 at. % and increased as a function of V{sub s} for all deposition techniques. All films exhibited compressive residual stress, σ, which depends on the growth method; HiPIMS produces the least stressed films with values ranging between −0.4 and −1.2 GPa for all V{sub s}, while CN{sub x} films deposited by MFMS showed residual stresses up to −4.2

  17. Low-temperature growth of low friction wear-resistant amorphous carbon nitride thin films by mid-frequency, high power impulse, and direct current magnetron sputtering

    International Nuclear Information System (INIS)

    Bakoglidis, Konstantinos D.; Schmidt, Susann; Garbrecht, Magnus; Ivanov, Ivan G.; Jensen, Jens; Greczynski, Grzegorz; Hultman, Lars

    2015-01-01

    The potential of different magnetron sputtering techniques for the synthesis of low friction and wear resistant amorphous carbon nitride (a-CN x ) thin films onto temperature-sensitive AISI52100 bearing steel, but also Si(001) substrates was studied. Hence, a substrate temperature of 150 °C was chosen for the film synthesis. The a-CN x films were deposited using mid-frequency magnetron sputtering (MFMS) with an MF bias voltage, high power impulse magnetron sputtering (HiPIMS) with a synchronized HiPIMS bias voltage, and direct current magnetron sputtering (DCMS) with a DC bias voltage. The films were deposited using a N 2 /Ar flow ratio of 0.16 at the total pressure of 400 mPa. The negative bias voltage, V s , was varied from 20 to 120 V in each of the three deposition modes. The microstructure of the films was characterized by high-resolution transmission electron microscopy and selected area electron diffraction, while the film morphology was investigated by scanning electron microscopy. All films possessed an amorphous microstructure, while the film morphology changed with the bias voltage. Layers grown applying the lowest substrate bias of 20 V exhibited pronounced intercolumnar porosity, independent of the sputter technique. Voids closed and dense films are formed at V s  ≥ 60 V, V s  ≥ 100 V, and V s  = 120 V for MFMS, DCMS, and HiPIMS, respectively. X-ray photoelectron spectroscopy revealed that the nitrogen-to-carbon ratio, N/C, of the films ranged between 0.2 and 0.24. Elastic recoil detection analysis showed that Ar content varied between 0 and 0.8 at. % and increased as a function of V s for all deposition techniques. All films exhibited compressive residual stress, σ, which depends on the growth method; HiPIMS produces the least stressed films with values ranging between −0.4 and −1.2 GPa for all V s , while CN x films deposited by MFMS showed residual stresses up to −4.2 GPa. Nanoindentation showed a significant

  18. Axisymmetrical particle-in-cell/Monte Carlo simulation of narrow gap planar magnetron plasmas. I. Direct current-driven discharge

    International Nuclear Information System (INIS)

    Kondo, Shuji; Nanbu, Kenichi

    2001-01-01

    An axisymmetrical particle-in-cell/Monte Carlo simulation is performed for modeling direct current-driven planar magnetron discharge. The axisymmetrical structure of plasma parameters such as plasma density, electric field, and electron and ion energy is examined in detail. The effects of applied voltage and magnetic field strength on the discharge are also clarified. The model apparatus has a narrow target-anode gap of 20 mm to make the computational time manageable. This resulted in the current densities which are very low compared to actual experimental results for a wider target-anode gap. The current-voltage characteristics show a negative slope in contrast with many experimental results. However, this is understandable from Gu and Lieberman's similarity equation. The negative slope appears to be due to the narrow gap

  19. Growth and characterization of textured YBaCo2O5+δ thin films grown on (001)-SrTiO3 via DC magnetron sputtering

    International Nuclear Information System (INIS)

    Galeano, V.; Arnache, O.; Supelano, I.; Vargas, C.A. Parra; Morán, O.

    2016-01-01

    Thin films of the layered cobaltite YBaCo 2 O 5+δ were successfully grown on (001)-oriented SrTiO 3 single-crystal substrates by means of DC magnetron sputtering. The 112 phase of the compound was stabilized by choosing an adequate Co reactant and through careful thermal treatment of the target. The results demonstrate the strong influence of these variables on the final phase of the compound. A substrate temperature of 1053 K and an oxygen pressure of 300 Pa seemed to be appropriate growing conditions for depositing (00ℓ)-textured YBaCo 2 O 5+δ thin films onto the chosen substrate. In like fashion to the polycrystalline YBaCo 2 O 5+δ , the films showed a clear sequence of antiferromagnetic–ferromagnetic–paramagnetic transitions within a narrow temperature range. Well-defined hysteresis loops were observed at temperatures as high as 270 K, which supports the existence of a FM order in the films. In turn, the dependence of the resistivity on the temperature shows a semiconductor-like behavior, without any distinguishable structure, within the temperature range measured (50–350 K). The analysis of the experimental data showed that the transport mechanism in the films is well described by using the Mott variable range hopping (VRH) conduction model. - Highlights: • YBaCo 2 O 5+δ thin films are grown on SrTiO 3 substrates. • Strong (00ℓ) reflections are observed in the X-ray diffraction pattern. • A clear sequence of magnetic transitions is observed. • Semiconducting-like behavior is verified.

  20. Structural and optical properties of DC magnetron sputtered ZnO films on glass substrate and their modification by Ag ions implantation

    Science.gov (United States)

    Ahmad, R.; Afzal, Naveed; Amjad, U.; Jabbar, S.; Hussain, T.; Hussnain, A.

    2017-07-01

    This work is focused on investigating the effects of deposition time and Ag ions implantation on structural and optical properties of ZnO film. The ZnO film was prepared on glass substrate by pulsed DC magnetron sputtering of pure Zn target in reactive oxygen environment for 2 h, 3 h, 4 h and 5 h respectively. X-ray diffraction results revealed polycrystalline ZnO film whose crystallinity was improved with increase of the deposition time. The morphological features indicated agglomeration of smaller grains into larger ones by increasing the deposition time. The UV-vis spectroscopy analysis depicted a small decrease in the band gap of ZnO from 3.36 eV to 3.27 eV with increase of deposition time. The Ag ions implantation in ZnO films deposited for 5 h on glass was carried out by using Pelletron Accelerator at different ions fluences ranging from 1  ×  1011 ions cm-2 to 2  ×  1012 ions cm-2. XRD patterns of Ag ions implanted ZnO did not show significant change in crystallite size by increasing ions fluence from 1  ×  1011 ions cm-2 to 5  ×  1011 ions cm-2. However, with further increase of the ions fluence, the crystallite size was decreased. The band gap of Ag ions implanted ZnO indicated anomalous variations with increase of the ions fluence.

  1. Effect of deposition angle on the structure and properties of pulsed-DC magnetron sputtered TiAlN thin films

    International Nuclear Information System (INIS)

    Shetty, A.R.; Karimi, A.; Cantoni, M.

    2011-01-01

    This article reports the comparison of structure and properties of titanium aluminum nitride (TiAlN) films deposited onto Si(100) substrates under normal and oblique angle depositions using pulsed-DC magnetron sputtering. The substrate temperature was set at room temperature, 400 o C and 650 o C, and the bias was kept at 0, - 25, - 50, and - 80 V for both deposition angles. The surface and cross-section of the films were observed by scanning electron microscopy. It was found that as the deposition temperature increases, films deposited under normal incidence exhibit distinct faceted crystallites, whereas oblique angle deposited (OAD) films develop a kind of 'tiles of a roof' or 'stepwise structure', with no facetted crystallites. The OAD films showed an inclined columnar structure, with columns tilting in the direction of the incident flux. As the substrate temperature was increased, the tilting of columns nearly approached the substrate normal. Both hardness and Young's modulus decreases when the flux angle was changed from α = 0 o to 45 o as measured by nanoindentation. This was attributed to the voids formed due to the shadowing effect. The crystallographic properties of these coatings were studied by θ-2θ scan and pole figure X-ray diffraction. Films deposited at α = 0 o showed a mixed (111) and (200) out-of-plane orientation with random in-plane alignment. On the other hand, films deposited at α = 45 o revealed an inclined texture with (111) orientation moving towards the incident flux direction and the (200) orientation approaching the substrate normal, showing substantial in-plane alignment.

  2. Current Mode Control for LLC Series Resonant DC-to-DC Converters

    OpenAIRE

    Jinhaeng Jang; Syam Kumar Pidaparthy; Byungcho Choi

    2015-01-01

    Conventional voltage mode control only offers limited performance for LLC series resonant DC-to-DC converters experiencing wide variations in operational conditions. When the existing voltage mode control is employed, the closed-loop performance of the converter is directly affected by unavoidable changes in power stage dynamics. Thus, a specific control design optimized at one particular operating point could become unacceptable when the operational condition is varied. This paper presents a...

  3. Substrate heating and cooling during magnetron sputtering of copper target

    Energy Technology Data Exchange (ETDEWEB)

    Shapovalov, Viktor I.; Komlev, Andrey E.; Bondarenko, Anastasia S., E-mail: stopnastia@gmail.com; Baykov, Pavel B.; Karzin, Vitaliy V.

    2016-02-22

    Heating and cooling processes of the substrate during the DC magnetron sputtering of the copper target were investigated. The sensitive element of a thermocouple was used as a substrate. It was found, that the heat outflow rate from the substrate is lower when the magnetron is turned off rather than when it is turned on. Furthermore, the heating rate, the ultimate temperature, and the heat outflow rate related to the deposition of copper atoms are directly proportional to the discharge current density. - Highlights: • New effect of heat outflow from substrate when magnetron is on was discovered. • This new effect is linear in terms of heat outflow rate to target current ratio. • Kinetic equation for heating process additively considers this effect.

  4. Second Ripple Current Suppression by Two Bandpass Filters and Current Sharing Method for Energy Storage Converters in DC Microgrid

    DEFF Research Database (Denmark)

    Yang, Ling; Chen, Yandong; Luo, An

    2017-01-01

    With the increasing of AC loads injected into DC microgird (MG) through the inverters, the second ripple current (SRC) in the front-end energy storage converter (ESC) and circulating current among the ESCs in DC MG become more and more serious. In this paper, the SRC suppression method by introdu......With the increasing of AC loads injected into DC microgird (MG) through the inverters, the second ripple current (SRC) in the front-end energy storage converter (ESC) and circulating current among the ESCs in DC MG become more and more serious. In this paper, the SRC suppression method...

  5. Rotor position sensor switches currents in brushless dc motors

    Science.gov (United States)

    1965-01-01

    Reluctance switch incorporated in an induction motor is used for sensing rotor position and switching armature circuits in a brushless dc motor. This device drives the solar array system of an unmanned space satellite.

  6. Study of a piezoelectric transformer-based DC/DC converter with a cooling system and current-doubler rectifier

    International Nuclear Information System (INIS)

    Su, Yu-Hao; Liu, Yuan-Ping; Wu, Wen-Jong; Lee, Chih-Kung; Vasic, Dejan; Costa, Francois

    2013-01-01

    The objective of this study was to increase the output current and power in a piezoelectric transformer (PT)-based DC/DC converter by using a cooling system. It is known that the output current of a PT is limited by temperature build-up because of losses, especially when driving at high vibration velocity. Although connecting different inductive circuits at the PT secondary terminal can increase the output current, the root cause of the temperature build-up problem has not yet been solved. This paper presents a study of a PT with cooling system in a DC/DC converter with a commonly used full-bridge rectifier and current-doubler rectifier. The advantages and disadvantages of the proposed technique were investigated. A theoretical–phenomenological model was developed to explain the relationship between the losses and the temperature rise. It will be shown that the vibration velocity as well as heat generation increases the losses. In our design, the maximum output current capacity can increase by 100% when the temperature of operation of the PT is kept below 55 ° C. The study comprises a theoretical part and experimental proof-of-concept demonstration of the proposed design method. (paper)

  7. Influence of Microwave Power on the Properties of Hydrogenated Diamond-Like Carbon Films Prepared by ECR Plasma Enhanced DC Magnetron Sputtering

    International Nuclear Information System (INIS)

    Ru Lili; Huang Jianjun; Gao Liang; Qi Bing

    2010-01-01

    Electron cyclotron resonance (ECR) plasma was applied to enhance the direct current magnetron sputtering to prepare hydrogenated diamond-like carbon (H-DLC) films. For different microwave powers, both argon and hydrogen gas are introduced separately as the ECR working gas to investigate the influence of microwave power on the microstructure and electrical property of the H-DLC films deposited on P-type silicon substrates. A series of characterization methods including the Raman spectrum and atomic force microscopy are used. Results show that, within a certain range, the increase in microwave power affects the properties of the thin films, namely the sp 3 ratio, the hardness, the nanoparticle size and the resistivity all increase while the roughness decreases with the increase in microwave power. The maximum of resistivity amounts to 1.1 x 10 9 Ω · cm. At the same time it is found that the influence of microwave power on the properties of H-DLC films is more pronounced when argon gas is applied as the ECR working gas, compared to hydrogen gas.

  8. AC Voltage Control of DC/DC Converters Based on Modular Multilevel Converters in Multi-Terminal High-Voltage Direct Current Transmission Systems

    Directory of Open Access Journals (Sweden)

    Rui Li

    2016-12-01

    Full Text Available The AC voltage control of a DC/DC converter based on the modular multilevel converter (MMC is considered under normal operation and during a local DC fault. By actively setting the AC voltage according to the two DC voltages of the DC/DC converter, the modulation index can be near unity, and the DC voltage is effectively utilized to output higher AC voltage. This significantly decreases submodule (SM capacitance and conduction losses of the DC/DC converter, yielding reduced capital cost, volume, and higher efficiency. Additionally, the AC voltage is limited in the controllable range of both the MMCs in the DC/DC converter; thus, over-modulation and uncontrolled currents are actively avoided. The AC voltage control of the DC/DC converter during local DC faults, i.e., standby operation, is also proposed, where only the MMC connected on the faulty cable is blocked, while the other MMC remains operational with zero AC voltage output. Thus, the capacitor voltages can be regulated at the rated value and the decrease of the SM capacitor voltages after the blocking of the DC/DC converter is avoided. Moreover, the fault can still be isolated as quickly as the conventional approach, where both MMCs are blocked and the DC/DC converter is not exposed to the risk of overcurrent. The proposed AC voltage control strategy is assessed in a three-terminal high-voltage direct current (HVDC system incorporating a DC/DC converter, and the simulation results confirm its feasibility.

  9. Research and Development for an Alternative RF Source Using Magnetrons in CEBAF

    Science.gov (United States)

    Jacobs, Andrew

    2016-09-01

    At Jefferson Lab, klystrons are currently used as a radiofrequency (RF) power source for the 1497 MHz Continuous Electron Beam Accelerator Facility (CEBAF) Continuous Wave (CW) system. A drop-in replacement for the klystrons in the form of a system of magnetrons is being developed. The klystron DC-RF efficiency at CEBAF is 35-51% while the estimated magnetron efficiency is 80-90%. Thus, the introduction of magnetrons to CEBAF will have enormous benefits in terms of electrical power saving. The primary focus of this project was to characterize a magnetron's frequency pushing and pulling curves at 2.45 GHz with stub tuner and anode current adjustments so that a Low Level RF controller for a new 1.497 GHz magnetron can be built. A Virtual Instrument was created in LabVIEW, and data was taken. The resulting data allowed for the creation of many constant lines of frequency and output power. Additionally, the results provided a characterization of magnetron oven temperature drift over the operation time and the relationship between anode current and frequency. Using these results, the control model of different variables and their feedback or feedforward that affect the frequency pushing and pulling of the magnetron is better developed. Department of Energy, Science Undergraduate Laboratory Internships, and Jefferson Lab.

  10. High voltage direct current transmission converters, systems and DC grids

    CERN Document Server

    Jovcic, Dragan

    2015-01-01

    This comprehensive reference guides the reader through all HVDC technologies, including LCC (Line Commutated Converter), 2-level VSC and VSC HVDC based on modular multilevel converters (MMC) for an in-depth understanding of converters, system level design, operating principles and modeling. Written in a tutorial style, the book also describes the key principles of design, control, protection and operation of DC transmission grids, which will be substantially different from the practice with AC transmission grids. The first dedicated reference to the latest HVDC technologies and DC grid developments; this is an essential resource for graduate students and researchers as well as engineers and professionals working on the design, modeling and operation of DC grids and HVDC.

  11. Input-parallel output-parallel (IPOP) three-level (TL) DC/DC converters with minimized capacitor ripple currents

    DEFF Research Database (Denmark)

    Liu, Dong; Deng, Fujin; Zhang, Qi

    2016-01-01

    , the component current stresses in the proposed converters are reduced. More significantly, the combination of the proposed IPOP TL circuit structure and the interleaving control strategy can largely reduce the ripple currents on the two input capacitors not only by doubling the frequencies of the ripple...... currents on two input capacitors but also by counteracting part of these ripple currents according to the operation principle of the proposed converters. Therefore, the proposed IPOP TL DC/DC converters with the interleaving control strategy can improve the performances of the converters in increasing...... the lifetimes of the input capacitors and minimizing the sizes of the input capacitors. Finally, the simulation and experimental results are presented to verify the effectiveness and feasibility of the proposed converters combined with the interleaving control strategy....

  12. Input-Parallel Output-Parallel Three-Level DC/DC Converters With Interleaving Control Strategy for Minimizing and Balancing Capacitor Ripple Currents

    DEFF Research Database (Denmark)

    Liu, Dong; Deng, Fujin; Gong, Zheng

    2017-01-01

    In this paper, the input-parallel output-parallel (IPOP) three-level (TL) DC/DC converters associated with the interleaving control strategy are proposed for minimizing and balancing the capacitor ripple currents. The proposed converters consist of two four-switch half-bridge three-level (HBTL) DC...

  13. Interlink Converter with Linear Quadratic Regulator Based Current Control for Hybrid AC/DC Microgrid

    Directory of Open Access Journals (Sweden)

    Dwi Riana Aryani

    2017-11-01

    Full Text Available A hybrid alternate current/direct current (AC/DC microgrid consists of an AC subgrid and a DC subgrid, and the subgrids are connected through the interlink bidirectional AC/DC converter. In the stand-alone operation mode, it is desirable that the interlink bidirectional AC/DC converter manages proportional power sharing between the subgrids by transferring power from the under-loaded subgrid to the over-loaded one. In terms of system security, the interlink bidirectional AC/DC converter takes an important role, so proper control strategies need to be established. In addition, it is assumed that a battery energy storage system is installed in one subgrid, and the coordinated control of interlink bidirectional AC/DC converter and battery energy storage system converter is required so that the power sharing scheme between subgrids becomes more efficient. For the purpose of designing a tracking controller for the power sharing by interlink bidirectional AC/DC converter in a hybrid AC/DC microgrid, a droop control method generates a power reference for interlink bidirectional AC/DC converter based on the deviation of the system frequency and voltages first and then interlink bidirectional AC/DC converter needs to transfer the power reference to the over-loaded subgrid. For efficiency of this power transferring, a linear quadratic regulator with exponential weighting for the current regulation of interlink bidirectional AC/DC converter is designed in such a way that the resulting microgrid can operate robustly against various uncertainties and the power sharing is carried out quickly. Simulation results show that the proposed interlink bidirectional AC/DC converter control strategy provides robust and efficient power sharing scheme between the subgrids without deteriorating the secure system operation.

  14. Microporous TiO2-WO3/TiO2 films with visible-light photocatalytic activity synthesized by micro arc oxidation and DC magnetron sputtering

    International Nuclear Information System (INIS)

    Wu, Kee-Rong; Hung, Chung-Hsuang; Yeh, Chung-Wei; Wu, Jiing-Kae

    2012-01-01

    Highlights: ► A simple MAO is used to prepare porous WO 3 /TiO 2 layer on Ti sheet as a visible-light enabled catalyst. ► The photocatalytic activity of the WO 3 /TiO 2 is enhanced by sputtering over an N,C-TiO 2 layer. ► This is ascribed to the synergetic effect of hybrid sample prepared by two-step method. - Abstract: This study reports the preparation of microporous TiO 2 -WO 3 /TiO 2 films with a high surface area using a two-step approach. A porous WO 3 /TiO 2 template was synthesized by oxidizing a titanium sheet using a micro arc oxidation (MAO) process. This sheet was subsequently overlaid with a visible light (Vis)-enabled TiO 2 (N,C-TiO 2 ) film, which was deposited by codoping nitrogen (N) and carbon (C) ions into a TiO 2 lattice using direct current magnetron sputtering. The resulting microporous TiO 2 -WO 3 /TiO 2 film with a 0.38-μm-thick N,C-TiO 2 top-layer exhibited high photocatalytic activity in methylene blue (MB) degradation among samples under ultraviolet (UV) and Vis irradiation. This is attributable to the synergetic effect of two-step preparation method, which provides a highly porous microstructure and the well-crystallized N,C-TiO 2 top-layer. This is because a higher surface area with high crystallinity favors the adsorption of more MB molecules and more photocatalytic active areas. Thus, the microporous TiO 2 -WO 3 /TiO 2 film has promising applications in the photocatalytic degradation of dye solution under UV and Vis irradiation. These results imply that the microporous WO 3 /TiO 2 can be used as a template of hybrid electrode because it enables rapid fabrication.

  15. Process stabilization by peak current regulation in reactive high-power impulse magnetron sputtering of hafnium nitride

    International Nuclear Information System (INIS)

    Shimizu, T; Villamayor, M; Helmersson, U; Lundin, D

    2016-01-01

    A simple and cost effective approach to stabilize the sputtering process in the transition zone during reactive high-power impulse magnetron sputtering (HiPIMS) is proposed. The method is based on real-time monitoring and control of the discharge current waveforms. To stabilize the process conditions at a given set point, a feedback control system was implemented that automatically regulates the pulse frequency, and thereby the average sputtering power, to maintain a constant maximum discharge current. In the present study, the variation of the pulse current waveforms over a wide range of reactive gas flows and pulse frequencies during a reactive HiPIMS process of Hf-N in an Ar–N 2 atmosphere illustrates that the discharge current waveform is a an excellent indicator of the process conditions. Activating the reactive HiPIMS peak current regulation, stable process conditions were maintained when varying the N 2 flow from 2.1 to 3.5 sccm by an automatic adjustment of the pulse frequency from 600 Hz to 1150 Hz and consequently an increase of the average power from 110 to 270 W. Hf–N films deposited using peak current regulation exhibited a stable stoichiometry, a nearly constant power-normalized deposition rate, and a polycrystalline cubic phase Hf-N with (1 1 1)-preferred orientation over the entire reactive gas flow range investigated. The physical reasons for the change in the current pulse waveform for different process conditions are discussed in some detail. (paper)

  16. A DC Microgrid Coordinated Control Strategy Based on Integrator Current-Sharing

    DEFF Research Database (Denmark)

    Gao, Liyuan; Liu, Yao; Ren, Huisong

    2017-01-01

    The DC microgrid has become a new trend for microgrid study with the advantages of high reliability, simple control and low losses. With regard to the drawbacks of the traditional droop control strategies, an improved DC droop control strategy based on integrator current-sharing is introduced....... In the strategy, the principle of eliminating deviation through an integrator is used, constructing the current-sharing term in order to make the power-sharing between different distributed generation (DG) units uniform and reasonable, which can reduce the circulating current between DG units. Furthermore......, at the system coordinated control level, a hierarchical/droop control strategy based on the DC bus voltage is proposed. In the strategy, the operation modes of the AC main network and micro-sources are determined through detecting the DC voltage variation, which can ensure the power balance of the DC microgrid...

  17. Investigation of DC magnetron-sputtered TiO2 coatings: Effect of coating thickness, structure, and morphology on photocatalytic activity

    DEFF Research Database (Denmark)

    Daviðsdóttir, Svava; Shabadi, Rajashekhara; Galca, Aurelian Catalin

    2014-01-01

    The photocatalytic performance of magnetron-sputtered titanium dioxide (TiO2) coatings of different thickness in anatase crystalline structure deposited on aluminium 1050 alloy substrates was investigated using a combination of photo-electrochemistry, methylene blue decomposition, and microscopic...

  18. The high current test facility injector operation to 40 mA dc

    International Nuclear Information System (INIS)

    Ungrin, J.; Ormrod, J.H.; Michel, W.L.

    1976-01-01

    The high current test facility injector is a 750 keV proton accelerator designed to investigate the problems involved in the acceleration of intense dc proton beams. The performance of the injector and the experience gained in operation with dc beams up to 40 mA are described. (author)

  19. Evaluation of a new 10 mA DC current reference standard

    CERN Document Server

    Fernqvist, G; Power, F

    2002-01-01

    A new DC current reference standard has been developed as a component in a Current calibration hierarchy in the LHC project at CERN. The standard provides 10 mA DC current with an accuracy less than 0.5 ppm, drift less than 2 ppm/year and compliance error less than 0.1 ppm for 0-10 V. The paper gives the results from two years evaluation of a series of 5 units.

  20. DC Link Current Estimation in Wind-Double Feed Induction Generator Power Conditioning System

    Directory of Open Access Journals (Sweden)

    MARIAN GAICEANU

    2010-12-01

    Full Text Available In this paper the implementation of the DC link current estimator in power conditioning system of the variable speed wind turbine is shown. The wind turbine is connected to double feed induction generator (DFIG. The variable electrical energy parameters delivered by DFIG are fitted with the electrical grid parameters through back-to-back power converter. The bidirectional AC-AC power converter covers a wide speed range from subsynchronous to supersynchronous speeds. The modern control of back-to-back power converter involves power balance concept, therefore its load power should be known in any instant. By using the power balance control, the DC link voltage variation at the load changes can be reduced. In this paper the load power is estimated from the dc link, indirectly, through a second order DC link current estimator. The load current estimator is based on the DC link voltage and on the dc link input current of the rotor side converter. This method presents certain advantages instead of using measured method, which requires a low pass filter: no time delay, the feedforward current component has no ripple, no additional hardware, and more fast control response. Through the numerical simulation the performances of the proposed DC link output current estimator scheme are demonstrated.

  1. A DC Microgrid Coordinated Control Strategy Based on Integrator Current-Sharing

    Directory of Open Access Journals (Sweden)

    Liyuan Gao

    2017-08-01

    Full Text Available The DC microgrid has become a new trend for microgrid study with the advantages of high reliability, simple control and low losses. With regard to the drawbacks of the traditional droop control strategies, an improved DC droop control strategy based on integrator current-sharing is introduced. In the strategy, the principle of eliminating deviation through an integrator is used, constructing the current-sharing term in order to make the power-sharing between different distributed generation (DG units uniform and reasonable, which can reduce the circulating current between DG units. Furthermore, at the system coordinated control level, a hierarchical/droop control strategy based on the DC bus voltage is proposed. In the strategy, the operation modes of the AC main network and micro-sources are determined through detecting the DC voltage variation, which can ensure the power balance of the DC microgrid under different operating conditions. Meanwhile, communication is not needed between different DG units, while each DG unit needs to sample the DC bus voltage, which retains the plug-and-play feature of the DC microgrid. The proposed control strategy is validated by simulation on a DC microgrid with permanent magnet synchronous generator-based wind turbines, solar arrays and energy storage batteries, which can be applied to small commercial or residential buildings.

  2. Effect of electroless nickel interlayer on the electrochemical behavior of single layer CrN, TiN, TiAlN coatings and nanolayered TiAlN/CrN multilayer coatings prepared by reactive dc magnetron sputtering

    International Nuclear Information System (INIS)

    Grips, V.K. William; Ezhil Selvi, V.; Barshilia, Harish C.; Rajam, K.S.

    2006-01-01

    The electrochemical behavior of single layer TiN, CrN, TiAlN and multilayer TiAlN/CrN coatings, deposited on steel substrates using a multi-target reactive direct current (dc) magnetron sputtering process, was studied in 3.5% NaCl solution. The total thickness of the coatings was about 1.5 μm. About 0.5 μm thick chromium interlayer was used to improve adhesion of the coatings. With an aim to improve the corrosion resistance, an additional interlayer of approximately 5 μm thick electroless nickel (EN) was deposited on the substrate. Potentiodynamic polarization and electrochemical impedance spectroscopy (EIS) were used to study the corrosion behavior of the coatings. Scanning electron microscopy and energy dispersive X-ray analysis were used to characterize the corroded samples. The potentiodynamic polarization tests showed lower corrosion current density and higher polarization resistance (R p ) for the coatings with EN interlayer. For example, the corrosion current density of TiN coated steel was decreased by a factor of 10 by incorporating 5 μm thick EN interlayer. Similarly, multilayer coatings of TiAlN/CrN with EN interlayer showed about 30 times improved corrosion resistance as compared to the multilayers without EN interlayer. The porosity values were calculated from the potentiodynamic polarization data. The Nyquist and the Bode plots obtained from the EIS data were fitted by appropriate equivalent circuits. The pore resistance (R pore ), the charge transfer resistance (R ct ), the coating capacitance (Q coat ) and the double layer capacitance (Q dl ) of the coatings were obtained from the equivalent circuit. Multilayer coatings showed higher R pore and R ct values as compared to the single layer coatings. Similarly, the Q coat and Q dl values decreased from uncoated substrate to the multilayer coatings, indicating a decrease in the defect density by the addition of EN interlayer. These studies were confirmed by examining the corroded samples under

  3. Optical properties of aluminum nitride thin films grown by direct-current magnetron sputtering close to epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Stolz, A. [Institut d' Electronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, PRES Lille, Université Nord de France, Avenue Poincaré, 59652 Villeneuve d' Ascq Cedex (France); Soltani, A., E-mail: ali.soltani@iemn.univ-lille1.fr [Institut d' Electronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, PRES Lille, Université Nord de France, Avenue Poincaré, 59652 Villeneuve d' Ascq Cedex (France); Abdallah, B. [Department of Materials Physics, Atomic Energy Commission of Syria, Damascus, P.O. Box 6091 (Syrian Arab Republic); Charrier, J. [Fonctions Optiques pour les Technologies de l' informatiON (FOTON), UMR CNRS 6082, 6, rue de Kerampont CS 80518, 22305 Lannion Cedex (France); Deresmes, D. [Institut d' Electronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, PRES Lille, Université Nord de France, Avenue Poincaré, 59652 Villeneuve d' Ascq Cedex (France); Jouan, P.-Y.; Djouadi, M.A. [Institut des Matériaux Jean Rouxel – IMN, UMR CNRS 6502, 2, rue de la Houssinère BP 32229, 44322 Nantes (France); Dogheche, E.; De Jaeger, J.-C. [Institut d' Electronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, PRES Lille, Université Nord de France, Avenue Poincaré, 59652 Villeneuve d' Ascq Cedex (France)

    2013-05-01

    Low-temperature Aluminum Nitride (AlN) thin films with a thickness of 3 μm were deposited by Direct-Current magnetron sputtering on sapphire substrate. They present optical properties similar to those of epitaxially grown films. Different characterization methods such as X-Ray Diffraction, Transmission Electron Microscopy and Atomic Force Microscopy were used to determine the structural properties of the films such as its roughness and crystallinity. Newton interferometer was used for stress measurement of the films. Non-destructive prism-coupling technique was used to determine refractive index and thickness homogeneity by a mapping on the whole sample area. Results show that AlN films grown on AlGaN layer have a high crystallinity close to epitaxial films, associated to a low intrinsic stress for low thickness. These results highlight that it is possible to grow thick sample with microstructure and optical properties close to epitaxy, even on a large surface. - Highlights: ► Aluminum Nitride sputtering technique with a low temperature growth process ► Epitaxial quality of two microns sputtered Aluminum Nitride film ► Optics as a non-destructive accurate tool for acoustic wave investigation.

  4. An Improved Droop Control Method for DC Microgrids Based on Low Bandwidth Communication with DC Bus Voltage Restoration and Enhanced Current Sharing Accuracy

    DEFF Research Database (Denmark)

    Lu, Xiaonan; Guerrero, Josep M.; Sun, Kai

    2014-01-01

    Droop control is the basic control method for load current sharing in dc microgrid applications. The conventional dc droop control method is realized by linearly reducing the dc output voltage as the output current increases. This method has two limitations. First, with the consideration of line...... resistance in a droop-controlled dc microgrid, since the output voltage of each converter cannot be exactly the same, the output current sharing accuracy is degraded. Second, the DC bus voltage deviation increases with the load due to the droop action. In this paper, in order to improve the performance......, and the LBC system is only used for changing the values of the dc voltage and current. Hence, a decentralized control scheme is accomplished. The simulation test based on Matlab/Simulink and the experimental validation based on a 2×2.2 kW prototype were implemented to demonstrate the proposed approach....

  5. Geometric considerations in magnetron sputtering

    International Nuclear Information System (INIS)

    Thornton, J.A.

    1982-01-01

    The recent development of high performance magnetron type discharge sources has greatly enhaced the range of coating applications where sputtering is a viable deposition process. Magnetron sources can provide high current densities and sputtering rates, even at low pressures. They have much reduced substrate heating rates and can be scaled to large sizes. Magnetron sputter coating apparatuses can have a variety of geometric and plasma configurations. The target geometry affects the emission directions of both the sputtered atoms and the energetic ions which are neutralized and reflected at the cathode. This fact, coupled with the long mean free particle paths which are prevalent at low pressures, can make the coating properties very dependent on the apparatus geometry. This paper reviews the physics of magnetron operation and discusses the influences of apparatus geometry on the use of magnetrons for rf sputtering and reactive sputtering, as well as on the microstructure and internal stresses in sputtered metallic coatings. (author) [pt

  6. Distributed Secondary Control for DC Microgrid Applications with Enhanced Current Sharing Accuracy

    DEFF Research Database (Denmark)

    Lu, Xiaonan; Guerrero, Josep M.; Sun, Kai

    2013-01-01

    With the consideration of line resistances in a dc microgrid, the current sharing accuracy is lowered down, since the dc output voltage cannot be exactly the same for different interfacing converters. Meanwhile, the dc bus voltage deviation is involved by using droop control. In this paper...... control diagram is accomplished and the requirement of distributed configuration in a microgrid is satisfied. The experimental validation based on a 2×2.2 kW prototype was implemented to demonstrate the proposed approach......., a distributed secondary control method is proposed. Droop control is employed as the primary control method for load current sharing. Meanwhile, the dc output voltage and current in each module is transferred to the others by the low bandwidth communication (LBC) network. Average voltage and current controllers...

  7. Multiphase soft switched DC/DC converter and active control technique for fuel cell ripple current elimination

    Science.gov (United States)

    Lai, Jih-Sheng; Liu, Changrong; Ridenour, Amy

    2009-04-14

    DC/DC converter has a transformer having primary coils connected to an input side and secondary coils connected to an output side. Each primary coil connects a full-bridge circuit comprising two switches on two legs, the primary coil being connected between the switches on each leg, each full-bridge circuit being connected in parallel wherein each leg is disposed parallel to one another, and the secondary coils connected to a rectifying circuit. An outer loop control circuit that reduces ripple in a voltage reference has a first resistor connected in series with a second resistor connected in series with a first capacitor which are connected in parallel with a second capacitor. An inner loop control circuit that reduces ripple in a current reference has a third resistor connected in series with a fourth resistor connected in series with a third capacitor which are connected in parallel with a fourth capacitor.

  8. Ring magnetron ionizer

    International Nuclear Information System (INIS)

    Alessi, J.G.

    1986-01-01

    A ring magnetron D - charge exchange ionizer has been built and tested. An H - current of 500 μA was extracted with an estimated H 0 density in the ionizer of 10 12 cm -3 . This exceeds the performance of ionizers presently in use on polarized H - sources. The ionizer will soon be tested with a polarized atomic beam

  9. Design and implementation of adaptive slope compensation in current mode DC-DC converter

    International Nuclear Information System (INIS)

    Guo Zhongjie; Wu Longsheng; Liu Youbao

    2010-01-01

    To improve the compensation for the inherent instability in a current mode converter, the adaptive slope compensation, giving attention to the problems of the traditional compensation on compensation accuracy, loading capability and turning jitter, is presented. Based on the analysis of current loop, by detecting the input and output voltage, converting the adaptive slope compensation current, the compensation of the current loop is optimized successfully. It can not only improve the compensation accuracy but also eliminate the over compensation, the turning jitter and the poor loading capability in the reported slope compensation. A power supply chip with adaptive slope compensation has been fabricated in a 0.35 μm CMOS process. The measurement results show that the chip starts up and operates steadily with the constant current limit under conditions of 5 V input voltage, from 10% to 100% duty cycle. (semiconductor integrated circuits)

  10. Research on current sharing of paralleled IGBTs in different DC breaker circuit topologies

    Directory of Open Access Journals (Sweden)

    Chen Ying

    2016-01-01

    Full Text Available IGBT modules used in series and parallel to satisfy the requirement in high-power DC circuit breakers are often prone to large-current destruction due to current unbalance between paralleled IGBTs. It is of great importance to identify the current unbalance causes and to find a method optimizing the current sharing of paralleled IGBTs. In this paper the current-sharing influencing factors are discussed and verified by simulation. Two possible circuit topologies used in DC circuit breakers are proposed and simulated to see their performance in current sharing. The results show that one of them can provide us with a simple and effective method to achieve good current balancing in the DC circuit breaker application.

  11. Development of laser heated high current DC electron gun

    International Nuclear Information System (INIS)

    Banerjee, Srutarshi; Bhattacharjee, Dhruva; Kandaswamy, E.; Ghodke, S.R.; Tiwari, Rajnish; Bakhtsingh, R.I.

    2015-01-01

    The paper deals with the development of a Laser heated cathode for Electron Accelerator. The electron gun is meant for Megawatt-class DC Accelerator for Electron Beam Flue Gas Treatment applications. Conventionally, LaB 6 cathode is indirectly heated by tungsten filaments whereas in the newly proposed gun, Laser is utilized for heating. A Nd:YAG Laser is used to heat the LaB 6 cathode to emission temperatures. The characterization of cathode heating at various Laser powers has been carried out. In initial trials, it has been observed that with 125 W of Laser power, the LaB 6 pellet was heated to 1315 ° C. Based on these experimental results, an electron gun rated for 30 kV, 350 mA CW has been designed. The optimization of gun electrode geometry has been done using CST Particle Studio in order to tune the various electron gun parameters. The beam diameter obtained in simulation is 8 mm at 100 mm from the LaB 6 cathode. The perveance obtained is 7.1 x 10 -8 A/V 3/2 . The Laser heated cathode has the advantages of eliminating the magnetic field effects of filament on the electron beam, electrical isolation needed for gun filament power supplies and better electron beam emittances. (author)

  12. Design considerations for high current regulated DC power supplies with reference to 600 kW variable DC power supply

    International Nuclear Information System (INIS)

    Ushakumari; Garud, A.N.; Nadkarni, S.S.

    1980-01-01

    High current regulated dc power supplies find increasing applications in industry and research. The power rating of these supplies vary from few killowatts to megawatts. The general requirements of these supplies for various applications and the techniques used to achieve the desired performance are presented. The design and selection of various circuit blocks namely the rectifier transformer, multiphase rectifier arrangement, SCR paralleling and current sensing techniques, are discussed in detail for a 600 killowatt current controlled supply developed in the Bhabha Atomic Research Centre, Bombay, and used for the thermal studies of reactor components. The power supply incorporates paralleled phase controlled thyristors with a closed loop feedback circuitary to achieve a current stability of 0.1% and smooth output variation from 10 to 100%. (auth.)

  13. Research on Digital Output Verification Technology of Electronic DC Current Transformer

    Science.gov (United States)

    Chen, Yuanjie; Wang, Bin; Hu, Haoliang; Xiong, Qianzhu; Yang, Chunyan

    2017-05-01

    Aiming at the error of calibration system when conducting field calibration by electronic DC current transformer’s digital calibration system, an electronic DC current transformer’s digital calibration system based on protocol conversion is proposed and researched. Data frames outputted from merging unit are collected and converted by the system, the digital synchronization is realized by using the synchronous clock device to trigger the second pulse, and it is verified by the virtual instrument design software. The field calibration is conducted to some converter station digital dc current transformer under the rated current of 500A by using the calibration system. By calibrating and analyzing errors, the error is less than 0.075% when tested current is more than 40% of the rated current. According the standard in literature[1], performance of the calibration system is perfect, measured results perfectly meet the requirements of design, and the calibration system has great practical application value.

  14. DC Vs AC - War Of Currents For Future Power Systems A HVDC Technology Overview

    Directory of Open Access Journals (Sweden)

    Anil K. Rai

    2015-08-01

    Full Text Available DC vs AC discussion began in 1880s with development of first commercial power transmission in Wall Street New York. Later when AC technology came into notice by efforts of inventor and researcher Sir Nicola Tesla soon the advantages of AC transmission and AC devices overtook the DC technology. It was hoped that DC technology had lost battle of currents. Today with researches going on FACTS devices and bulk power transmission HVDC has again gained a reputation in power sector. Solution of this centuries old debate is to develop HVDC systems that assists HVAC systems for better performance stability and control

  15. Magnetic Particle inspection by DC and AC magnetization current

    International Nuclear Information System (INIS)

    Lim, Zhong Soo; Kim, Goo Hwa

    1996-01-01

    Dry magnetic particle inspection was performed to detect the surface defects of the steel billets. The detectability was evaluated according to magnetizing current, temperature, and amount of the magnetic particles on material. We selected a certain set of steel compositions for target materials. Their magnetic properties are measured with B-H hysteresis graph. Results of the magnetic particle inspection(MPI) by direct magnetizing current was compared with results of the finite element method calculations, which were verified by measurement of the magnetic leakage flux above the surface of material. For square rod materials, the magnetic flux density at the corner was about 30% of that at the face center with sufficiently large direct magnetizing current, while it is about 70% with alternating magnetizing current. Alternating magnetizing current generates rather uniform magnetic flux density running from the center to the corner except for the region of about 10 mm extending from the corner.

  16. Plug-and-Play Design of Current Controllers for Grid-feeding Converters in DC Microgrids

    DEFF Research Database (Denmark)

    Han, Renke; Tucci, Michele; Soloperto, Raffaele

    2017-01-01

    In this paper, we address the problem of synthesizing decentralized current controllers for grid-feeding converters of current-controlled distributed generation units (CDGUs) in dc microgrids (MGs). Notably, a plug-and-play (PnP) design procedure is proposed to achieve grid-feeding current tracking...

  17. Research on resistance characteristics of YBCO tape under short-time DC large current impact

    Science.gov (United States)

    Zhang, Zhifeng; Yang, Jiabin; Qiu, Qingquan; Zhang, Guomin; Lin, Liangzhen

    2017-06-01

    Research of the resistance characteristics of YBCO tape under short-time DC large current impact is the foundation of the developing DC superconducting fault current limiter (SFCL) for voltage source converter-based high voltage direct current system (VSC-HVDC), which is one of the valid approaches to solve the problems of renewable energy integration. SFCL can limit DC short-circuit and enhance the interrupting capabilities of DC circuit breakers. In this paper, under short-time DC large current impacts, the resistance features of naked tape of YBCO tape are studied to find the resistance - temperature change rule and the maximum impact current. The influence of insulation for the resistance - temperature characteristics of YBCO tape is studied by comparison tests with naked tape and insulating tape in 77 K. The influence of operating temperature on the tape is also studied under subcooled liquid nitrogen condition. For the current impact security of YBCO tape, the critical current degradation and top temperature are analyzed and worked as judgment standards. The testing results is helpful for in developing SFCL in VSC-HVDC.

  18. Design and evaluation of a 10-mA DC current reference standard

    CERN Document Server

    Fernqvist, G; Pickering, J; Power, F

    2003-01-01

    A new DC current reference standard has been developed for high- current power converter calibration in the large hadron collider (LHC) project at the European Organization for Nuclear Research (CERN). This standard provides a near ideal 10-mA DC current with long-term drift of one part in 10/sup 6/ per year. The paper describes the requirements and the detailed design and evaluation of the unit. Since similar 10-V standards are commercially available, the paper concentrates on the unique current output capability of this device. (4 refs).

  19. A beam position monitor for low current dc beams

    International Nuclear Information System (INIS)

    Adderley, P.; Barry, W.; Heefner, J.; Kloeppel, P.; Rossmanith, R.; Wise, M.; Jachim, S.

    1989-01-01

    The 4 GeV recirculating linac, CEBAF, if presently under construction and will produce a CW beam with average current between.1 and 200 μA. In order to measure beam position, the beam current will be amplitude modulated at a frequency of 10 MHz. The modulation is detected by an inductive loop type monitor with electronics sensitive only to the modulation frequency. The first test with beam from the CEBAF injector indicate that beam position can be measured with an accuracy of .1 mm at a modulated beam current of 1 μA. 1 ref., 6 figs., 1 tab

  20. Digital Signal Processing and Generation for a DC Current Transformer for Particle Accelerators

    Energy Technology Data Exchange (ETDEWEB)

    Zorzetti, Silvia [Fermi National Accelerator Lab. (FNAL), Batavia, IL (United States)

    2013-01-01

    The thesis topic, digital signal processing and generation for a DC current transformer, focuses on the most fundamental beam diagnostics in the field of particle accelerators, the measurement of the beam intensity, or beam current. The technology of a DC current transformer (DCCT) is well known, and used in many areas, including particle accelerator beam instrumentation, as non-invasive (shunt-free) method to monitor the DC current in a conducting wire, or in our case, the current of charged particles travelling inside an evacuated metal pipe. So far, custom and commercial DCCTs are entirely based on analog technologies and signal processing, which makes them inflexible, sensitive to component aging, and difficult to maintain and calibrate.

  1. Comparative study of total power density at a substrate in pulsed DC magnetron and hollow-cathode plasma jet sputtering systems

    Czech Academy of Sciences Publication Activity Database

    Čada, Martin; Virostko, Petr; Kment, Štěpán; Hubička, Zdeněk

    2009-01-01

    Roč. 6, S1 (2009), S247-S252 ISSN 1612-8850. [International Conference on Plasma Surface Engineering /11./. Garmisch Partenkirchen, 15.09.2008-19.09.2008] R&D Projects: GA AV ČR KAN301370701; GA AV ČR KJB100100707; GA AV ČR KJB100100805; GA MŠk(CZ) 1M06002 Institutional research plan: CEZ:AV0Z10100522 Keywords : calorimeter probe * floating substrate * magnetron * plasma jet * pulsed discharge Subject RIV: BH - Optics, Masers, Lasers Impact factor: 4.037, year: 2009

  2. High current DC negative ion source for cyclotron

    Energy Technology Data Exchange (ETDEWEB)

    Etoh, H., E-mail: Hrh-Etoh@shi.co.jp; Aoki, Y.; Mitsubori, H.; Arakawa, Y.; Sakuraba, J.; Kato, T.; Mitsumoto, T.; Hiasa, T.; Yajima, S. [Sumitomo Heavy Industries, Ltd., Tokyo 141-6025 (Japan); Onai, M.; Hatayama, A. [Graduate School of Science and Technology, Keio University, Kanagawa 223-8522 (Japan); Shibata, T. [High Energy Accelerator Research Organization (KEK), Ibaraki 305-0801 (Japan); Okumura, Y. [Fusion Research and Development Directorate, Japan Atomic Energy Agency, Aomori 039-3212 (Japan)

    2016-02-15

    A filament driven multi-cusp negative ion source has been developed for proton cyclotrons in medical applications. In Cs-free operation, continuous H{sup −} beam of 10 mA and D{sup −} beam of 3.3 mA were obtained stably at an arc-discharge power of 3 kW and 2.4 kW, respectively. In Cs-seeded operation, H{sup −} beam current reached 22 mA at a lower arc power of 2.6 kW with less co-extracted electron current. The optimum gas flow rate, which gives the highest H{sup −} current, was 15 sccm in the Cs-free operation, while it decreased to 4 sccm in the Cs-seeded operation. The relationship between H{sup −} production and the design/operating parameters has been also investigated by a numerical study with KEIO-MARC code, which gives a reasonable explanation to the experimental results of the H{sup −} current dependence on the arc power.

  3. DC current distribution mapping system of the solar panels using a HTS-SQUID gradiometer

    International Nuclear Information System (INIS)

    Miyazaki, Shingo; Kasuya, Syohei; Saari, Mohd Mawardi; Sakai, Kenji; Kiwa, Toshihiko; Tsukada, Keiji; Tsukamoto, Akira; Adachi, Seiji; Tanabe, Keiichi

    2014-01-01

    Solar panels are expected to play a major role as a source of sustainable energy. In order to evaluate solar panels, non-destructive tests, such as defect inspections and response property evaluations, are necessary. We developed a DC current distribution mapping system of the solar panels using a High Critical Temperature Superconductor Superconducting Quantum Interference Device (HTS-SQUID) gradiometer with ramp edge type Josephson junctions. Two independent components of the magnetic fields perpendicular to the panel surface (∂Bz/∂x, ∂Bz/∂y) were detected. The direct current of the solar panel is visualized by calculating the composition of the two signal components, the phase angle, and mapping the DC current vector. The developed system can evaluate the uniformity of DC current distributions precisely and may be applicable for defect detection of solar panels.

  4. Zero-Voltage Switching PWM Strategy Based Capacitor Current-Balancing Control for Half-Bridge Three-Level DC/DC Converter

    DEFF Research Database (Denmark)

    Liu, Dong; Deng, Fujin; Zhang, Qi

    2018-01-01

    The current imbalance among the two input capacitors is one of the important issues of the half-bridge threelevel (HBTL) DC/DC converter, which would affect system performance and reliability. In this paper, a zero-voltage switching (ZVS) pulse-wide modulation (PWM) strategy including two operation...

  5. Influence of DC arc current on the formation of cobalt-based ...

    Indian Academy of Sciences (India)

    The synthesis of cobalt-based magnetic nanostructures using DC arc discharge technique with varying arc current is reported here. The structural, morphological, compositional and magnetic properties of thesenanostructures were studied as a function of applied arc current. Various techniques like X-ray diffraction, ...

  6. Robust method for stator current reconstruction from DC link in a ...

    African Journals Online (AJOL)

    Using the switching signals and dc link current, this paper presents a new algorithm for the reconstruction of stator currents of an inverter-fed, three-phase induction motor drive. Unlike the classical and improved methods available in literature, the proposed method is neither based on pulse width modulation pattern ...

  7. DC bias effect on alternating current electrical conductivity of poly(ethylene terephthalate)/alumina nanocomposites

    Energy Technology Data Exchange (ETDEWEB)

    Nikam, Pravin N., E-mail: pravinya26@gmail.com; Deshpande, Vineeta D., E-mail: drdeshpandevd@gmail.com [Department of Physics, Institute of Chemical Technology, Matunga, Mumbai-400019, Maharashtra (India)

    2016-05-06

    Polymer nanocomposites based on metal oxide (ceramic) nanoparticles are a new class of materials with unique properties and designed for various applications such as electronic device packaging, insulation, fabrication and automotive industries. Poly(ethylene terephthalate) (PET)/alumina (Al{sub 2}O{sub 3}) nanocomposites with filler content between 1 wt% and 5 wt% were prepared by melt compounding method using co-rotating twin screw extruder and characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM) and precision LCR meter techniques. The results revealed that proper uniform dispersion at lower content up to 2 wt% of nano-alumina observed by using TEM. Aggregation of nanoparticles was observed at higher content of alumina examined by using SEM and TEM. The frequency dependences of the alternating current (AC) conductivity (σ{sub AC}) of PET/alumina nanocomposites on the filler content and DC bias were investigated in the frequency range of 20Hz - 1MHz. The results showed that the AC and direct current (DC) conductivity increases with increasing DC bias and nano-alumina content upto 3 wt%. It follows the Jonscher’s universal power law of solids. It revealed that σ{sub AC} of PET/alumina nanocomposites can be well characterized by the DC conductivity (σ{sub DC}), critical frequency (ω{sub c}), critical exponent of the power law (s). Roll of DC bias potential led to an increase of DC conductivity (σ{sub DC}) due to the creation of additional conducting paths with the polymer nanocomposites and percolation behavior achieved through co-continuous morphology.

  8. DC bias effect on alternating current electrical conductivity of poly(ethylene terephthalate)/alumina nanocomposites

    Science.gov (United States)

    Nikam, Pravin N.; Deshpande, Vineeta D.

    2016-05-01

    Polymer nanocomposites based on metal oxide (ceramic) nanoparticles are a new class of materials with unique properties and designed for various applications such as electronic device packaging, insulation, fabrication and automotive industries. Poly(ethylene terephthalate) (PET)/alumina (Al2O3) nanocomposites with filler content between 1 wt% and 5 wt% were prepared by melt compounding method using co-rotating twin screw extruder and characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM) and precision LCR meter techniques. The results revealed that proper uniform dispersion at lower content up to 2 wt% of nano-alumina observed by using TEM. Aggregation of nanoparticles was observed at higher content of alumina examined by using SEM and TEM. The frequency dependences of the alternating current (AC) conductivity (σAC) of PET/alumina nanocomposites on the filler content and DC bias were investigated in the frequency range of 20Hz - 1MHz. The results showed that the AC and direct current (DC) conductivity increases with increasing DC bias and nano-alumina content upto 3 wt%. It follows the Jonscher's universal power law of solids. It revealed that σAC of PET/alumina nanocomposites can be well characterized by the DC conductivity (σDC), critical frequency (ωc), critical exponent of the power law (s). Roll of DC bias potential led to an increase of DC conductivity (σDC) due to the creation of additional conducting paths with the polymer nanocomposites and percolation behavior achieved through co-continuous morphology.

  9. A No-Arc DC Circuit Breaker Based on Zero-Current Interruption

    Science.gov (United States)

    Xiang, Xuewei; Chai, Jianyun; Sun, Xudong

    2017-05-01

    A dc system has no natural current zero-crossing point, so a dc arc is more difficult to extinguish than an ac arc. In order to effectively solve the problem of the dc arc, this paper proposes a dc circuit breaker (DCCB) capable of implementing a no-arc interruption. The proposed DCCB includes a main branch consisting of a mechanical switch, a diode and a current-limiting inductor, a semi-period resonance circuit consisting of a diode, an inductor and a capacitor, and a buffer branch consisting of a capacitor, a thyristor and a resistor. The mechanical switch is opened in a zero-current state, and the overvoltage caused by the counter electromotive force of the inductor does not exist. Meanwhile, the capacitor has a buffering effect on the voltage. The rising of the voltage of the mechanical switch is slower than the rising of the insulating strength of a contact gap of the mechanical switch, resulting in the contact gap not able to be broken down. Thus, the arc cannot be generated. The simulation results show that the proposed DCCB does not generate the arc in the interruption process, the rise rate of the short circuit current can be effectively limited, and the short circuit fault point can be rapidly isolated from the dc power supply.

  10. High stability, high current DC-power supplies

    International Nuclear Information System (INIS)

    Hosono, K.; Hatanaka, K.; Itahashi, T.

    1995-01-01

    Improvements of the power supplies and the control system of the AVF cyclotron which is used as an injector to the ring cyclotron and of the transport system to the ring cyclotron were done in order to get more high quality and more stable beam. The power supply of the main coil of the AVF cyclotron was exchanged to new one. The old DCCTs (zero-flux current transformers) used for the power supplies of the trim coils of the AVF cyclotron were changed to new DCCTs to get more stability. The potentiometers used for the reference voltages in the other power supplies of the AVF cyclotron and the transport system were changed to the temperature controlled DAC method for numerical-value settings. This paper presents the results of the improvements. (author)

  11. Strong mechanically induced effects in DC current-biased suspended Josephson junctions

    Science.gov (United States)

    McDermott, Thomas; Deng, Hai-Yao; Isacsson, Andreas; Mariani, Eros

    2018-01-01

    Superconductivity is a result of quantum coherence at macroscopic scales. Two superconductors separated by a metallic or insulating weak link exhibit the AC Josephson effect: the conversion of a DC voltage bias into an AC supercurrent. This current may be used to activate mechanical oscillations in a suspended weak link. As the DC-voltage bias condition is remarkably difficult to achieve in experiments, here we analyze theoretically how the Josephson effect can be exploited to activate and detect mechanical oscillations in the experimentally relevant condition with purely DC current bias. We unveil how changing the strength of the electromechanical coupling results in two qualitatively different regimes showing dramatic effects of the oscillations on the DC-voltage characteristic of the device. These include the appearance of Shapiro-type plateaus for weak coupling and a sudden mechanically induced retrapping for strong coupling. Our predictions, measurable in state-of-the-art experimental setups, allow the determination of the frequency and quality factor of the resonator using DC only techniques.

  12. Monitoring DC stray current interference of steel sheet pile structures in railway environment

    NARCIS (Netherlands)

    Peelen, W.H.A.; Neeft, E.A.C.; Leegwater, G.; Kanten-Roos, W. van; Courage, W.M.G.

    2011-01-01

    Steel structures near DC powered railways are expected to be affected by stray current interference. This causes accelerated corrosion rates. Therefore steel is often not used as a building material in these cases, although certain advantages over the alternative material concrete exist. These

  13. Operation of the DC current transformer intensity monitors at FNAL during run II

    Energy Technology Data Exchange (ETDEWEB)

    Crisp, J.; Fellenz, B.; Heikkinen, D.; Ibrahim, M.A.; Meyer, T.; Vogel, G.; /Fermilab

    2012-01-01

    Circulating beam intensity measurements at FNAL are provided by five DC current transformers (DCCT), one per machine. With the exception of the DCCT in the Recycler, all DCCT systems were designed and built at FNAL. This paper presents an overview of both DCCT systems, including the sensor, the electronics, and the front-end instrumentation software, as well as their performance during Run II.

  14. Decentralised control method for DC microgrids with improved current sharing accuracy

    DEFF Research Database (Denmark)

    Yang, Jie; Jin, Xinmin; Wu, Xuezhi

    2017-01-01

    A decentralised control method that deals with current sharing issues in dc microgrids (MGs) is proposed in this study. The proposed method is formulated in terms of ‘modified global indicator’ concept, which was originally proposed to improve reactive power sharing in ac MGs. In this work......, the ‘modified global indicator’ concept is extended to coordinate dc MGs, which aims to preserve the main features offered by decentralised control methods such as no need of communication links, central controller or knowledge of the microgrid topology and parameters. This global indicator is inserted between...... a shunt virtual resistance. The operation under multiple dc-buses is also included in order to enhance the applicability of the proposed controller. A detailed mathematical model including the effect of network mismatches is derived for analysis of the stability of the proposed controller. The feasibility...

  15. Transparent Conductive In and Ga Doped ZnO/Cu Bi-Layered Films Deposited by DC and RF Magnetron Sputtering

    International Nuclear Information System (INIS)

    Moon, Hyun-Joo; Song, Young-Hwan; Oh, Jung-Hyun; Heo, Sung-Bo; Kim, Daeil

    2016-01-01

    In- and Ga-doped ZnO (IGZO) films were deposited on 5 nm thick Cu film buffered poly-carbonate substrates with RF magnetron sputtering and the effects of the Cu buffer layer on the optical and electrical properties of the films were investigated. The IGZO single layer films exhibited an electrical resistivity of 1.2×10"-1 Ω cm while the IGZO/Cu bi-layered films exhibited a lower resistivity of 1.6×10"-3 Ω cm. With respect to optical properties, the optical band gap of the IGZO films appeared to decrease as a result of an increasing carrier concentration due to the Cu buffer layer. In addition, the RMS roughness (8.2 nm) of the IGZO films also decreased to 6.8 nm by a Cu buffer layer in AFM observation. Although the optical transmittance in the range of visible wavelengths was deteriorated by the Cu buffer layer, the IGZO films with a 5 nm thick Cu buffer layer exhibited a higher figure of merit of 2.6×10"-4 Ω"-1 compared with the IGZO single layer films due to enhanced optoelectrical performance.

  16. Transparent Conductive In and Ga Doped ZnO/Cu Bi-Layered Films Deposited by DC and RF Magnetron Sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Moon, Hyun-Joo; Song, Young-Hwan; Oh, Jung-Hyun; Heo, Sung-Bo; Kim, Daeil [University of Ulsan, Ulsan (Korea, Republic of)

    2016-06-15

    In- and Ga-doped ZnO (IGZO) films were deposited on 5 nm thick Cu film buffered poly-carbonate substrates with RF magnetron sputtering and the effects of the Cu buffer layer on the optical and electrical properties of the films were investigated. The IGZO single layer films exhibited an electrical resistivity of 1.2×10{sup -}1 Ω cm while the IGZO/Cu bi-layered films exhibited a lower resistivity of 1.6×10{sup -}3 Ω cm. With respect to optical properties, the optical band gap of the IGZO films appeared to decrease as a result of an increasing carrier concentration due to the Cu buffer layer. In addition, the RMS roughness (8.2 nm) of the IGZO films also decreased to 6.8 nm by a Cu buffer layer in AFM observation. Although the optical transmittance in the range of visible wavelengths was deteriorated by the Cu buffer layer, the IGZO films with a 5 nm thick Cu buffer layer exhibited a higher figure of merit of 2.6×10{sup -}4 Ω{sup -}1 compared with the IGZO single layer films due to enhanced optoelectrical performance.

  17. Novel family of quasi-Z-source DC/DC converters derived from current-fed push-pull converters

    DEFF Research Database (Denmark)

    Chub, Andrii; Husev, Oleksandr; Vinnikov, Dmitri

    2014-01-01

    This paper is devoted to the step-up quasi-Z-source dc/dc push-pull converter family. The topologies in the family are derived from the isolated boost converter family by replacing input inductors with the quasi-Z-source network. Two new topologies are proposed, analyzed and compared. Theoretical...

  18. DC bias effect on alternating current electrical conductivity of poly(ethylene terephthalate)/alumina nanocomposites

    International Nuclear Information System (INIS)

    Nikam, Pravin N.; Deshpande, Vineeta D.

    2016-01-01

    Polymer nanocomposites based on metal oxide (ceramic) nanoparticles are a new class of materials with unique properties and designed for various applications such as electronic device packaging, insulation, fabrication and automotive industries. Poly(ethylene terephthalate) (PET)/alumina (Al_2O_3) nanocomposites with filler content between 1 wt% and 5 wt% were prepared by melt compounding method using co-rotating twin screw extruder and characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM) and precision LCR meter techniques. The results revealed that proper uniform dispersion at lower content up to 2 wt% of nano-alumina observed by using TEM. Aggregation of nanoparticles was observed at higher content of alumina examined by using SEM and TEM. The frequency dependences of the alternating current (AC) conductivity (σ_A_C) of PET/alumina nanocomposites on the filler content and DC bias were investigated in the frequency range of 20Hz - 1MHz. The results showed that the AC and direct current (DC) conductivity increases with increasing DC bias and nano-alumina content upto 3 wt%. It follows the Jonscher’s universal power law of solids. It revealed that σ_A_C of PET/alumina nanocomposites can be well characterized by the DC conductivity (σ_D_C), critical frequency (ω_c), critical exponent of the power law (s). Roll of DC bias potential led to an increase of DC conductivity (σ_D_C) due to the creation of additional conducting paths with the polymer nanocomposites and percolation behavior achieved through co-continuous morphology.

  19. Calculation of DC Arc Plasma Torch Voltage- Current Characteristics Based on Steebeck Model

    International Nuclear Information System (INIS)

    Gnedenko, V.G.; Ivanov, A.A.; Pereslavtsev, A.V.; Tresviatsky, S.S.

    2006-01-01

    The work is devoted to the problem of the determination of plasma torches parameters and power sources parameters (working voltage and current of plasma torch) at the predesigning stage. The sequence of calculation of voltage-current characteristics of DC arc plasma torch is proposed. It is shown that the simple Steenbeck model of arc discharge in cylindrical channel makes it possible to carry out this calculation. The results of the calculation are confirmed by the experiments

  20. Analysis of transient state in HTS tapes under ripple DC load current

    Science.gov (United States)

    Stepien, M.; Grzesik, B.

    2014-05-01

    The paper concerns the analysis of transient state (quench transition) in HTS tapes loaded with the current having DC component together with a ripple component. Two shapes of the ripple were taken into account: sinusoidal and triangular. Very often HTS tape connected to a power electronic current supply (i.e. superconducting coil for SMES) that delivers DC current with ripples and it needs to be examined under such conditions. Additionally, measurements of electrical (and thermal) parameters under such ripple excitation is useful to tape characterization in broad range of load currents. The results presented in the paper were obtained using test bench which contains programmable DC supply and National Instruments data acquisition system. Voltage drops and load currents were measured vs. time. Analysis of measured parameters as a function of the current was used to tape description with quench dynamics taken into account. Results of measurements were also used to comparison with the results of numerical modelling based on FEM. Presented provisional results show possibility to use results of measurements in transient state to prepare inverse models of superconductors and their detailed numerical modelling.

  1. Effect of organic-buffer-layer on electrical property and environmental reliability of Ga-doped ZnO films prepared by RF plasma assisted DC magnetron sputtering on plastic substrate

    International Nuclear Information System (INIS)

    Hinoki, Toshio; Kyuhara, Chika; Agura, Hideaki; Yazawa, Kenji; Kinoshita, Kentaro; Ohmi, Koutoku; Kishida, Satoru

    2010-01-01

    Ga-doped ZnO (GZO) transparent conductive films have been prepared by RF plasma assisted DC magnetron sputtering under a reductive atmosphere on organic-buffer-layer (OBL) coated polyethylene telephthalate (PET) substrates without intentionally heating substrates. Electrical and optical properties, crystallinity, and environmental reliability of the GZO films have been investigated. The distributional characteristic of resistivity is observed in the GZO film deposited on the OBL-coated PET substrates. The high resistivity at facing the erosion area in the source target is reduced by providing the RF plasma and H 2 gas near the substrate, resulting in a uniform distribution of the sheet resistance. It has been also found that the increase of resistivity by an accelerated aging test performed under a storage condition at 60 o C and at a relative humidity of 95% is suppressed by employing the OBL. The OBL suppresses the formation of cracks, which are induced by the aging test. These facts are thought to contribute to a high environmental reliability of GZO films on PET substrates. Values of resistivity, Hall mobility and carrier concentration are obtained: 5.0-20 x 10 -3 Ω cm, 4.0 cm 2 /Vs, and 3.8 x 10 20 cm -3 , respectively. An average transmittance of the GZO film including OBL and PET substrate is 78% in a visible region. The OBL enables to realize the practical use of GZO films on PET sheets.

  2. Pure and Nb2O5-doped TiO2 amorphous thin films grown by dc magnetron sputtering at room temperature: Surface and photo-induced hydrophilic conversion studies

    International Nuclear Information System (INIS)

    Suchea, M.; Christoulakis, S.; Tudose, I.V.; Vernardou, D.; Lygeraki, M.I.; Anastasiadis, S.H.; Kitsopoulos, T.; Kiriakidis, G.

    2007-01-01

    Photo-induced hydrophilicity of titanium dioxide makes this material one of the most suitable for various coating applications in antifogging mirrors and self-cleaning glasses. The field of functional titanium dioxide coatings is expanding rapidly not only in applications for glass but also in applications for polymer, metal and ceramic materials. The high hydrophilic surface of TiO 2 is interesting for understanding also the basic photon-related surface science of titanium dioxide. In doing so, it is inevitably necessary to understand the relationship between the photoreaction and the surface properties. In this work, photo-induced hydrophilic conversion was evaluated on amorphous pure and niobium oxide-doped titanium dioxide thin films on Corning 1737F glass grown by dc magnetron sputtering technique at room temperature. This study is focused on the influence of the Ar:O ratio during sputtering plasma deposition on thin film surface morphology and subsequent photo-induced hydrophilic conversion results. Structural characterization carried out by X-ray diffraction and atomic force microscopy (AFM) has shown that our films are amorphous and extremely smooth with a surface roughness bellow 1 nm. Contact angle measurements were performed on as-deposited and during/after 10 min UV exposure. We present evidence that the photo-induced hydrophilic conversion of film surface is directly correlated with surface morphology and can be controlled by growth conditions

  3. Effect of deposition temperature on the properties of Al-doped ZnO films prepared by pulsed DC magnetron sputtering for transparent electrodes in thin-film solar cells

    Science.gov (United States)

    Kim, Doo-Soo; Park, Ji-Hyeon; Shin, Beom-Ki; Moon, Kyeong-Ju; Son, Myoungwoo; Ham, Moon-Ho; Lee, Woong; Myoung, Jae-Min

    2012-10-01

    A simple but scalable approach to the production of surface-textured Al-doped ZnO(AZO) films for low-cost transparent electrode applications in thin-film solar cells is introduced in this study by combining pulsed dc magnetron sputtering (PDMS) with wet etching in sequence. First, structural, electrical, and optical properties of the AZO films prepared by a PDMS were investigated as functions of deposition temperature to obtain transparent electrode films that can be used as indium-free alternative to ITO electrodes. Increase in the deposition temperature to 230 °C accompanied the improvement in crystalline quality and doping efficiency, which enabled the lowest electrical resistivity of 4.16 × 10-4 Ω cm with the carrier concentration of 1.65 × 1021 cm-3 and Hall mobility of 11.3 cm2/V s. The wet etching of the films in a diluted HCl solution resulted in surface roughening via the formation of crater-like structures without significant degradation in the electrical properties, which is responsible for the enhanced light scattering capability required for anti-reflective electrodes in thin film solar cells.

  4. Effect of a Ga-doped ZnO thin film with a ZTO buffer layer fabricated by using pulsed DC magnetron sputter for dye-sensitized solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Song, Sang-Woo; Lee, Kyung-Ju; Roh, Ji-Hyung; Park, On-Jeon; Kim, Hwan-Sun; Moon, Byung-Moo [Korea University, Seoul (Korea, Republic of); Ji, Min-Woo [Yonsei University, Seoul (Korea, Republic of)

    2014-08-15

    The electrical property of a Ga-doped ZnO(GZO) thin film is well known to be similar that of commercialized fluorine-doped tin oxide(FTO). However GZO is limited for use at high process temperatures for solar cells because of its unstable resistivity at temperatures above 300 .deg. C. A GZO thin film compared to zinc tin oxide(ZTO)-GZO multilayer can be used at high process temperatures. A GZO thin film was deposited on glass by using pulsed DC magnetron sputter. Then, a ZTO buffer layer was deposited on the GZO surface. During the deposition, the working pressure was 5 mTorr (Z-1 glass) and 1 mTorr (Z-2 glass). Dye-sensitized solar cells (DSSCs) were fabricated using Z-1, Z-2 and commercialized FTO glasses. Z-2 showed a conversion efficiency of 4.265%, which was enhanced by 0.399% compared to that of the DSSCs using FTO(3.784%). The conversion efficiency for Z-1 (3.889%) was a little higher than that of FTO. Thus, the ZTO-GZO electrode showed better characteristics than those obtained using the FTO electrode, which can be attributed to the reduced charge recombination and series resistance.

  5. Acoustic Noise Alters Selective Attention Processes as Indicated by Direct Current (DC Brain Potential Changes

    Directory of Open Access Journals (Sweden)

    Karin Trimmel

    2014-09-01

    Full Text Available Acoustic environmental noise, even of low to moderate intensity, is known to adversely affect information processing in animals and humans via attention mechanisms. In particular, facilitation and inhibition of information processing are basic functions of selective attention. Such mechanisms can be investigated by analyzing brain potentials under conditions of externally directed attention (intake of environmental information versus internally directed attention (rejection of environmental stimuli and focusing on memory/planning processes. This study investigated brain direct current (DC potential shifts—which are discussed to represent different states of cortical activation—of tasks that require intake and rejection of environmental information under noise. It was hypothesized that without background noise rejection tasks would show more positive DC potential changes compared to intake tasks and that under noise both kinds of tasks would show positive DC shifts as an expression of cortical inhibition caused by noise. DC potential shifts during intake and rejection tasks were analyzed at 16 standard locations in 45 persons during irrelevant speech or white noise vs. control condition. Without noise, rejection tasks were associated with more positive DC potential changes compared to intake tasks. During background noise, however, this difference disappeared and both kinds of tasks led to positive DC shifts. Results suggest—besides some limitations—that noise modulates selective attention mechanisms by switching to an environmental information processing and noise rejection mode, which could represent a suggested “attention shift”. Implications for fMRI studies as well as for public health in learning and performance environments including susceptible persons are discussed.

  6. Acoustic noise alters selective attention processes as indicated by direct current (DC) brain potential changes.

    Science.gov (United States)

    Trimmel, Karin; Schätzer, Julia; Trimmel, Michael

    2014-09-26

    Acoustic environmental noise, even of low to moderate intensity, is known to adversely affect information processing in animals and humans via attention mechanisms. In particular, facilitation and inhibition of information processing are basic functions of selective attention. Such mechanisms can be investigated by analyzing brain potentials under conditions of externally directed attention (intake of environmental information) versus internally directed attention (rejection of environmental stimuli and focusing on memory/planning processes). This study investigated brain direct current (DC) potential shifts-which are discussed to represent different states of cortical activation-of tasks that require intake and rejection of environmental information under noise. It was hypothesized that without background noise rejection tasks would show more positive DC potential changes compared to intake tasks and that under noise both kinds of tasks would show positive DC shifts as an expression of cortical inhibition caused by noise. DC potential shifts during intake and rejection tasks were analyzed at 16 standard locations in 45 persons during irrelevant speech or white noise vs. control condition. Without noise, rejection tasks were associated with more positive DC potential changes compared to intake tasks. During background noise, however, this difference disappeared and both kinds of tasks led to positive DC shifts. Results suggest-besides some limitations-that noise modulates selective attention mechanisms by switching to an environmental information processing and noise rejection mode, which could represent a suggested "attention shift". Implications for fMRI studies as well as for public health in learning and performance environments including susceptible persons are discussed.

  7. Influence of O2 Flux on Compositions and Properties of ITO Films Deposited at Room Temperature by Direct-Current Pulse Magnetron Sputtering

    International Nuclear Information System (INIS)

    Wang Hua-Lin; Ding Wan-Yu; Liu Chao-Qian; Chai Wei-Ping

    2010-01-01

    Indium tin oxide (ITO) films were deposited on glass substrates at room temperature by dc pulse magnetron sputtering. Varying O 2 flux, ITO films with different properties are obtained. Both x-ray diffractometer and x-ray photoelectron spectrometer are used to study the change of crystalline structures and bonding structures of ITO films, respectively. Electrical properties are measured by four-point probe measurements. The results indicate that the chemical structures and compositions of ITO films strongly depend on the O 2 flux. With increasing O 2 flux, ITO films display better crystallization, which could decrease the resistivity of films. On the contrary, ITO films contain less O vacancies with increasing O 2 flux, which could worsen the conductive properties of films. Without any heat treatment onto the samples, the resistivity of the ITO film could reach 6.0 × 10 −4 Ω ·cm, with the optimal deposition parameter of 0.2 sccm O 2 flux. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  8. A current-mode DC—DC buck converter with adaptive zero compensation

    International Nuclear Information System (INIS)

    Yang Ling; Dai Guoding; Xu Chongwei; Liu Yuezhi

    2013-01-01

    To achieve fast transient response for a DC—DC buck converter, an adaptive zero compensation circuit is presented. The compensation resistance is dynamically adjusted according to the different output load conditions, and achieves an adequate system phase margin under the different conditions. An improved capacitor multiplier circuit is adopted to realize the minimized compensation capacitance size. In addition, analysis of the small-signal model shows the correctness of the mechanism of the proposed adaptive zero compensation technique. A current-mode DC—DC buck converter with the proposed structure has been implemented in a 0.35 μm CMOS process, and the die size is only 800 × 1040 μm 2 . The experimental results show that the transient undershoot/overshoot voltage and the recovery times do not exceed 40 mV and 30 μs for a load current variation from 100 mA to 1 A. (semiconductor integrated circuits)

  9. A DC-Link Modulation Scheme with Phase-Shifted Current Control for Harmonic Cancellations in Multidrive Applications

    DEFF Research Database (Denmark)

    Yang, Yongheng; Davari, Pooya; Zare, Firuz

    2016-01-01

    of a new DC link modulation scheme with a phase-shifted current control enabled by the SCR. The DC-link current modulation scheme is implemented by adding and subtracting specific modulation levels, which makes the total currents drawn from the grid “multi-level”, resulting in an improved current quality......This letter proposes a harmonic mitigation strategy to cancel out current harmonics induced by the front-end rectifiers in multi-drive systems, which consist of diode rectifiers, Silicon-Controlled Rectifiers (SCR), and boost converters in the DC-link. The proposed strategy is a combination...

  10. MHD simulations of DC helicity injection for current drive in tokamaks

    International Nuclear Information System (INIS)

    Sovinec, C.R.; Prager, S.C.

    1994-12-01

    MHD computations of DC helicity injection in tokamak-like configurations show current drive with no ''loop voltage'' in a resistive, pressureless plasma. The self-consistently generated current profiles are unstable to resistive modes that partially relax the profile through the MHD dynamo mechanism. The current driven by the fluctuations leads to closed contours of average poloidal flux. However, the 1% fluctuation level is large enough to produce a region of stochastic magnetic field. A limited Lundquist number (S) scan from 2.5 x 10 3 to 4 x 10 4 indicates that both the fluctuation level and relaxation increase with S

  11. Direct current insulator based dielectrophoresis (DC-iDEP) microfluidic chip for blood plasma separation

    OpenAIRE

    Mohammadi, Mahdi

    2015-01-01

    Lab-on-a-Chip (LOC) integrated microfluidics has been a powerful tool for new developments in analytical chemistry. These microfluidic systems enable the miniaturization, integration and automation of complex biochemical assays through the reduction of reagent use and enabling portability.Cell and particle separation in microfluidic systems has recently gained significant attention in many sample preparations for clinical procedures. Direct-current insulator-based dielectrophoresis (DC-iDEP) ...

  12. DC-magnetron sputtering of ZnO:Al films on (00.1)Al2O3 substrates from slip-casting sintered ceramic targets

    International Nuclear Information System (INIS)

    Miccoli, I.; Spampinato, R.; Marzo, F.; Prete, P.; Lovergine, N.

    2014-01-01

    Highlights: • ZnO:Al was DC-sputtered on sapphire >350 °C by slip-casting sintered AZO target. • Films are highly (00.1)-oriented, smooth and transparent in the NIR–visible range. • Films growth rate decreases with temperature, while their grain size increases. • A high temperature reduction for sticking coefficients of impinging species is proved. • We prove that Thornton model does not apply to high-temperature DC-sputtered ZnO. - Abstract: High (>350 °C) temperature DC-sputtering deposition of ZnO:Al thin films onto single-crystal (00.1) oriented Al 2 O 3 (sapphire) substrates is reported, using a ultrahigh-density, low-resistivity and low-cost composite ceramic target produced by slip-casting (pressureless) sintering of ZnO–Al 2 O 3 (AZO) powders. The original combination of high-angle θ–2θ (Bragg–Brentano geometry) X-ray diffraction with low angle θ–2θ X-ray reflectivity (XRR) techniques allows us to define the AZO target composition and investigate the structural properties and surface/interface roughness of as-sputtered ZnO:Al films; besides, the growth dynamics of ZnO:Al is unambiguously determined. The target turned out composed of the sole wurtzite ZnO and spinel ZnAl 2 O 4 phases. X-ray diffraction analyses revealed highly (00.1)-oriented (epitaxial) ZnO:Al films, the material mean crystallite size being in the 13–20 nm range and increasing with temperature between 350 °C and 450 °C, while the film growth rate (determined via XRR measurements) decreases appreciably. XRR spectra also allowed to determine rms surface roughness <1 nm for present films and showed ZnO:Al density changes by only a few percent between 350 °C and 450 °C. The latter result disproves the often-adopted Thornton model for the description of the sputter-grown ZnO films and instead points out toward a reduction of the sticking coefficients of impinging species, as the main origin of film growth rate and grain size dependence with temperature. Zn

  13. The influence of internal current loop on transient response performance of I-V droop controlled paralleled DC-DC converters

    DEFF Research Database (Denmark)

    Wang, Haojie; Han, Minxiao; Guerrero, Josep M.

    2017-01-01

    The external droop control loop of I-V droop control is designed as a voltage loop with embedded virtual impedance, so the internal current loop plays a major role in the system bandwidth. Thus, in this paper, the influence of internal current loop on transient response performance of I-V droop...... controlled paralleled dc-dc converters is analyzed, which is guided and significant for its industry application. The model which is used for dynamic analysis is built, and the root locus method is used based on the model to analyze the dynamic response of the system by shifting different control parameters...

  14. Radio-frequency current drive efficiency in the presence of ITBs and a dc electric field

    Science.gov (United States)

    Rosa, P. R. da S.; Mourão, R.; Ziebell, L. F.

    2009-05-01

    This paper discusses the current drive efficiency by the combined action of EC and LH waves in the presence of a dc electric field and transport, with an internal transport barrier. The transport is assumed to be produced by magnetic fluctuations. The study explores the different barrier parameters and their influence on the current drive efficiency. We study the subject by numerically solving the Fokker-Planck equation. Our main result is that the barrier depth and barrier width are important to determine the correct shape of the current density profile but not to determine the current drive efficiency, which is very little influenced by these parameters. We also found similar results for the influence of the level of magnetic fluctuations on the current density profile and on the current drive efficiency.

  15. Radio-frequency current drive efficiency in the presence of ITBs and a dc electric field

    International Nuclear Information System (INIS)

    Rosa, P.R. da S; Mourao, R.; Ziebell, L.F.

    2009-01-01

    This paper discusses the current drive efficiency by the combined action of EC and LH waves in the presence of a dc electric field and transport, with an internal transport barrier. The transport is assumed to be produced by magnetic fluctuations. The study explores the different barrier parameters and their influence on the current drive efficiency. We study the subject by numerically solving the Fokker-Planck equation. Our main result is that the barrier depth and barrier width are important to determine the correct shape of the current density profile but not to determine the current drive efficiency, which is very little influenced by these parameters. We also found similar results for the influence of the level of magnetic fluctuations on the current density profile and on the current drive efficiency.

  16. Giant Negative Piezoresistive Effect in Diamond-like Carbon and Diamond-like Carbon-Based Nickel Nanocomposite Films Deposited by Reactive Magnetron Sputtering of Ni Target

    DEFF Research Database (Denmark)

    Meškinis, Šaru Nas; Gudaitis, Rimantas; Šlapikas, Kęstutis

    2018-01-01

    deposited by either reactive HIPIMS or dc magnetron sputtering of Ni target was explained by possible clustering of the sp2-bonded carbon and/or formation of areas with the decreased hydrogen content. It was suggested that the tensile stress-induced rearrangements of these conglomerations have resulted......Piezoresistive properties of hydrogenated diamond-like carbon (DLC) and DLC-based nickel nanocomposite (DLC:Ni) films were studied in the range of low concentration of nickel nanoparticles. The films were deposited by reactive high power pulsed magnetron sputtering (HIPIMS) of Ni target, and some...... samples were deposited by direct current (dc) reactive magnetron sputtering for comparison purposes. Raman scattering spectroscopy, energy-dispersive X-ray spectrometry (EDS), and X-ray photoelectron spectroscopy (XPS) were used to study the structure and chemical composition of the films. A four...

  17. Simulation of the d.c. critical current in superconducting sintered ceramics

    International Nuclear Information System (INIS)

    Riedinger, R.; Habig, P.; Hlil, E.K.; Arnaud, M.; Boulesteix, C.

    1990-01-01

    The new superconducting high-T c sintered ceramics can be described in some case as a lattice of interconnected rods, in other cases as a more or less random packing of parallelepiped crystallites; their size is about a few microns. The d.c. critical current at zero voltage of such a material is not related to the critical current of the bulk material, but to its granular structure. Indeed, the critical current between two adjacent cells is governed by the critical current of the weak link between them; this link behaves within some limits as a Josephson junction, the critical current of which is known. For our present problem, the system can be modeled as a lattice of Josephson junctions. We present here results for the d.c. critical current at zero voltage of lattices of identical Josephson junctions in two dimensions. The influence of the finiteness of size of the sample is examined. The relationship with normal conductivity simulations and percolation is discussed

  18. Characteristics of burden resistors for high-precision DC current transducers

    CERN Document Server

    Fernqvist, G; Hudson, G; Pickering, J

    2007-01-01

    The DC current transducer (DCCT) and accompanying A/D converter determine the precision of a power converter in accelerator operation. In the LHC context this precision approaches 10-6 (1 ppm). Inside the DCCT a burden resistor is used to convert the current to an output voltage. The performance of this resistor is crucial for the accuracy, temperature behaviour, settling time and longterm drift of the DCCT. This paper reports on evaluations, a new parameter called â€ワpower coefficient” (PC) and test results from some different types of resistors available on the market.

  19. Plug-and-play control and consensus algorithms for current sharing in DC microgrids

    DEFF Research Database (Denmark)

    Tucci, Michele; Meng, Lexuan; Guerrero, Josep M.

    2017-01-01

    In this paper, we propose a secondary consensus-based control layer for current sharing and voltage balancing in DC microGrids (mGs). Differently from existing approaches based on droop control, we assume decentralized Plug-and-Play (PnP) regulators at the primary level, as they provide voltage...... functions (Tucci et al., 2016a). Besides showing stability, current sharing, and voltage balancing in the asymptotic régime, we describe how to design secondary controllers in a PnP fashion when Distributed Generation Units (DGUs) are added or removed. Theoretical results are complemented by simulations...

  20. Investigation of DC current injection effect on the microwave characteristics of HTS YBCO microstrip resonators

    Energy Technology Data Exchange (ETDEWEB)

    Nurgaliev, T., E-mail: timur@ie.bas.bg [Institute of Electronics, Bulgarian Academy of Sciences, 72 Tsarigradsko Chausse, 1784 Sofia (Bulgaria); Blagoev, B.; Mateev, E.; Neshkov, L. [Institute of Electronics, Bulgarian Academy of Sciences, 72 Tsarigradsko Chausse, 1784 Sofia (Bulgaria); Strbik, V. [Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, 841 04 Bratislava (Slovakia); Uspenskaya, L. [Institute of Solid State Physics, Russian Academy of Sciences, 142432 Chernogolovka, Moscow (Russian Federation); Nedkov, I. [Institute of Electronics, Bulgarian Academy of Sciences, 72 Tsarigradsko Chausse, 1784 Sofia (Bulgaria); Chromik, Š. [Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, 841 04 Bratislava (Slovakia)

    2014-03-15

    Highlights: • Current (spin) injection effect in LSMO/YBCO was studied by impedance measurements. • Complex impedance of YBCO increases at current injection from LSMO to YBCO at 77 K. • This increase is due to an increase of the quasiparticle conductivity of YBCO. • Injection does not significantly affect the relaxation time of the quasiparticles. - Abstract: The DC current injection effect from a ferromagnetic (FM) La{sub 0.7}Sr{sub 0.3}MnO{sub 3} (LSMO) to a high temperature superconducting (HTS) Y{sub 1}Ba{sub 2}Cu{sub 3}O{sub 7−x} (YBCO) thin film was investigated by the microwave surface impedance measurements in a FM/HTS structure, formed as a microstrip resonator for improving the sensitivity of the experiments. The quality factor and the resonance frequency of this structure were found to strongly depend on the current strength, injected from the LSMO electrode into the HTS microstrip electrode. The magnetic penetration depth and the quasiparticle conductivity of the HTS component were determined to increase under DC current injection process, which in all probability stimulated breaking of Cooper pairs and led to a decrease of the superfluid concentration and an increase of the normal fluid concentration without significantly affecting the relaxation time of the quasiparticles.

  1. Application of parallel connected power-MOSFET elements to high current d.c. power supply

    International Nuclear Information System (INIS)

    Matsukawa, Tatsuya; Shioyama, Masanori; Shimada, Katsuhiro; Takaku, Taku; Neumeyer, Charles; Tsuji-Iio, Shunji; Shimada, Ryuichi

    2001-01-01

    The low aspect ratio spherical torus (ST), which has single turn toroidal field coil, requires the extremely high d.c. current like as 20 MA to energize the coil. Considering the ratings of such extremely high current and low voltage, power-MOSFET element is employed as the switching device for the a.c./d.c. converter of power supply. One of the advantages of power-MOSFET element is low on-state resistance, which is to meet the high current and low voltage operation. Recently, the capacity of power-MOSFET element has been increased and its on-state resistance has been decreased, so that the possibility of construction of high current and low voltage a.c./d.c. converter with parallel connected power-MOSFET elements has been growing. With the aim of developing the high current d.c. power supply using power-MOSFET, the basic characteristics of parallel operation with power-MOSFET elements are experimentally investigated. And, the synchronous rectifier type and the bi-directional self commutated type a.c./d.c. converters using parallel connected power-MOSFET elements are proposed

  2. Growth and characterization of textured YBaCo{sub 2}O{sub 5+δ} thin films grown on (001)-SrTiO{sub 3} via DC magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Galeano, V. [Universidad Nacional de Colombia, Campus Medellín, Facultad de Ciencias, Departamento de Física, Laboratorio de Cerámicos y Vítreos, A.A. 568, Medellín (Colombia); Arnache, O. [Grupo de Estado Sólido, Departamento de Física, Universidad de Antioquia, A.A. 1226, Medellín (Colombia); Supelano, I.; Vargas, C.A. Parra [Universidad Pedagógica y Tecnológica de Colombia, Departamento de Física, Avenida Central del Norte 39-115, Tunja (Colombia); Morán, O., E-mail: omoranc@unal.edu.co [Universidad Nacional de Colombia, Campus Medellín, Facultad de Ciencias, Departamento de Física, Laboratorio de Cerámicos y Vítreos, A.A. 568, Medellín (Colombia)

    2016-06-30

    Thin films of the layered cobaltite YBaCo{sub 2}O{sub 5+δ} were successfully grown on (001)-oriented SrTiO{sub 3} single-crystal substrates by means of DC magnetron sputtering. The 112 phase of the compound was stabilized by choosing an adequate Co reactant and through careful thermal treatment of the target. The results demonstrate the strong influence of these variables on the final phase of the compound. A substrate temperature of 1053 K and an oxygen pressure of 300 Pa seemed to be appropriate growing conditions for depositing (00ℓ)-textured YBaCo{sub 2}O{sub 5+δ} thin films onto the chosen substrate. In like fashion to the polycrystalline YBaCo{sub 2}O{sub 5+δ}, the films showed a clear sequence of antiferromagnetic–ferromagnetic–paramagnetic transitions within a narrow temperature range. Well-defined hysteresis loops were observed at temperatures as high as 270 K, which supports the existence of a FM order in the films. In turn, the dependence of the resistivity on the temperature shows a semiconductor-like behavior, without any distinguishable structure, within the temperature range measured (50–350 K). The analysis of the experimental data showed that the transport mechanism in the films is well described by using the Mott variable range hopping (VRH) conduction model. - Highlights: • YBaCo{sub 2}O{sub 5+δ} thin films are grown on SrTiO{sub 3} substrates. • Strong (00ℓ) reflections are observed in the X-ray diffraction pattern. • A clear sequence of magnetic transitions is observed. • Semiconducting-like behavior is verified.

  3. Effect of Ta buffer and NiFe seed layers on pulsed-DC magnetron sputtered Ir{sub 20}Mn{sub 80}/Co{sub 90}Fe{sub 10} exchange bias

    Energy Technology Data Exchange (ETDEWEB)

    Oksuezoglu, Ramis Mustafa, E-mail: rmoksuzoglu@anadolu.edu.t [University of Anadolu, Faculty of Engineering and Architecture, Department of Materials Sciences and Engineering, Iki Eyluel Campus, 26555 Eskisehir (Turkey); Yildirim, Mustafa; Cinar, Hakan [University of Anadolu, Faculty of Engineering and Architecture, Department of Materials Sciences and Engineering, Iki Eyluel Campus, 26555 Eskisehir (Turkey); Hildebrandt, Erwin; Alff, Lambert [Department of Materials Sciences, Darmstadt University of Technology, Petersenstrasse 23, D-64287 Darmstadt (Germany)

    2011-07-15

    A systematic investigation has been done on the correlation between texture, grain size evolution and magnetic properties in Ta/Ni{sub 81}Fe{sub 19}/Ir{sub 20}Mn{sub 80}/Co{sub 90}Fe{sub 10}/Ta exchange bias in dependence of Ta buffer and NiFe seed layer thickness in the range of 2-10 nm, deposited by pulsed DC magnetron sputtering technique. A strong dependence of <1 1 1> texture on the Ta/NiFe thicknesses was found, where the reducing and increasing texture was correlated with exchange bias field and unidirectional anisotropy energy constant at both NiFe/IrMn and IrMn/CoFe interfaces. However, a direct correlation between average grain size in IrMn and H{sub ex} and H{sub c} was not observed. L1{sub 2} phase IrMn{sub 3} could be formed by thickness optimization of Ta/NiFe layers by deposition at room temperature, for which the maximum exchange coupling parameters were achieved. We conclude finally that the coercivity is mainly influenced by texture induced interfacial effects at NiFe/IrMn/CoFe interfaces developing with Ta/NiFe thicknesses. - Research highlights: We discussed the influence of Ta/NiFe thicknesses on structure and grain size in AF layer and texture. A direct correlation between the <1 1 1> texture and exchange coupling was found. A direct relation between average grain size and H{sub ex} and H{sub c} was not observed. L1{sub 2} phase IrMn{sub 3} was formed by deposition at room temperature for Ta (5-6 nm)/NiFe (6-8 nm). We conclude that the coercivity is influenced by order/disorder at NiFe/IrMn/CoFe interfaces.

  4. Effect of deposition temperature on the properties of Al-doped ZnO films prepared by pulsed DC magnetron sputtering for transparent electrodes in thin-film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Doo-Soo; Park, Ji-Hyeon; Shin, Beom-Ki; Moon, Kyeong-Ju [Information and Electronic Materials Research Laboratory, Department of Materials Science and Engineering, Yonsei University, 134 Shinchon-dong, Seodaemun-gu, Seoul 120-749 (Korea, Republic of); Son, Myoungwoo [Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of); Ham, Moon-Ho [Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of); School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of); Lee, Woong [School of Nano and Advanced Materials Engineering, Changwon National University, 9 Sarim-Dong, Changwon, Gyeongnam 641-773 (Korea, Republic of); Myoung, Jae-Min, E-mail: jmmyoung@yonsei.ac.kr [Information and Electronic Materials Research Laboratory, Department of Materials Science and Engineering, Yonsei University, 134 Shinchon-dong, Seodaemun-gu, Seoul 120-749 (Korea, Republic of)

    2012-10-15

    Highlights: Black-Right-Pointing-Pointer Surface-textured AZO films were achieved by combining PDMS method with wet etching. Black-Right-Pointing-Pointer The AZO film deposited at 230 Degree-Sign C by PDMS exhibited the best performance. Black-Right-Pointing-Pointer It is due to the higher plasma density supplied from PDMS system. Black-Right-Pointing-Pointer Wet etching of the films produces a crater-like rough surface morphology. - Abstract: A simple but scalable approach to the production of surface-textured Al-doped ZnO(AZO) films for low-cost transparent electrode applications in thin-film solar cells is introduced in this study by combining pulsed dc magnetron sputtering (PDMS) with wet etching in sequence. First, structural, electrical, and optical properties of the AZO films prepared by a PDMS were investigated as functions of deposition temperature to obtain transparent electrode films that can be used as indium-free alternative to ITO electrodes. Increase in the deposition temperature to 230 Degree-Sign C accompanied the improvement in crystalline quality and doping efficiency, which enabled the lowest electrical resistivity of 4.16 Multiplication-Sign 10{sup -4} {Omega} cm with the carrier concentration of 1.65 Multiplication-Sign 10{sup 21} cm{sup -3} and Hall mobility of 11.3 cm{sup 2}/V s. The wet etching of the films in a diluted HCl solution resulted in surface roughening via the formation of crater-like structures without significant degradation in the electrical properties, which is responsible for the enhanced light scattering capability required for anti-reflective electrodes in thin film solar cells.

  5. Effect of deposition temperature on the properties of Al-doped ZnO films prepared by pulsed DC magnetron sputtering for transparent electrodes in thin-film solar cells

    International Nuclear Information System (INIS)

    Kim, Doo-Soo; Park, Ji-Hyeon; Shin, Beom-Ki; Moon, Kyeong-Ju; Son, Myoungwoo; Ham, Moon-Ho; Lee, Woong; Myoung, Jae-Min

    2012-01-01

    Highlights: ► Surface-textured AZO films were achieved by combining PDMS method with wet etching. ► The AZO film deposited at 230 °C by PDMS exhibited the best performance. ► It is due to the higher plasma density supplied from PDMS system. ► Wet etching of the films produces a crater-like rough surface morphology. - Abstract: A simple but scalable approach to the production of surface-textured Al-doped ZnO(AZO) films for low-cost transparent electrode applications in thin-film solar cells is introduced in this study by combining pulsed dc magnetron sputtering (PDMS) with wet etching in sequence. First, structural, electrical, and optical properties of the AZO films prepared by a PDMS were investigated as functions of deposition temperature to obtain transparent electrode films that can be used as indium-free alternative to ITO electrodes. Increase in the deposition temperature to 230 °C accompanied the improvement in crystalline quality and doping efficiency, which enabled the lowest electrical resistivity of 4.16 × 10 −4 Ω cm with the carrier concentration of 1.65 × 10 21 cm −3 and Hall mobility of 11.3 cm 2 /V s. The wet etching of the films in a diluted HCl solution resulted in surface roughening via the formation of crater-like structures without significant degradation in the electrical properties, which is responsible for the enhanced light scattering capability required for anti-reflective electrodes in thin film solar cells.

  6. Mechanical properties, chemical analysis and evaluation of antimicrobial response of Si-DLC coatings fabricated on AISI 316 LVM substrate by a multi-target DC-RF magnetron sputtering method for potential biomedical applications

    Science.gov (United States)

    Bociaga, Dorota; Sobczyk-Guzenda, Anna; Szymanski, Witold; Jedrzejczak, Anna; Jastrzebska, Aleksandra; Olejnik, Anna; Jastrzebski, Krzysztof

    2017-09-01

    In this study silicon doped diamond-like carbon (Si-DLC) coatings were synthesized on two substrates: silicon and AISI 316LVM stainless steel using a multi-target DC-RF magnetron sputtering method. The Si content in the films ranged between 4 and 16 at.%, and was controlled by the electrical power applied in RF regime to Si cathode target. The character of the chemical bonds was revealed by FTIR analysis. With the addition of silicon the hydroxyl absorption (band in the range of 3200-3600 cm-1) increased what suggests more hydrophilic character of the coating. There were also observed significant changes in bonding of Si atoms. For low content of dopant, Si-O-Si bond system is predominant, while for the highest content of silicon there is an evidence of the shift to Si-C bonds in close proximity to methyl groups. The Raman spectroscopy revealed that the G peak position is shifted to a lower wavenumber and the ID/IG ratio decreased with increasing Si content, which indicates an increase in the C-sp3 content. Regardless of the coatings' composition, the improvement of hardness in comparison to pure substrate material (AISI 316 LVM) was observed. Although the reduction of the level of hardness from the level of 10.8 GPa for pure DLC to about 9.4 GPa for the silicon doped coatings was observed, the concomitant improvement of films adhesion with higher amount of Si was revealed. Although incorporation of the dopant to DLC coatings increases the number of E. coli cells which adhered to the examined surfaces, the microbial colonisation remains on the level of substrate material. The presented results prove the potential of Si-DLC coatings in biomedical applications from the point of view of their mechanical properties.

  7. Start Up Current Control of Buck-Boost Convertor-Fed Serial DC Motor

    Directory of Open Access Journals (Sweden)

    Yusuf SÖNMEZ

    2009-02-01

    Full Text Available Generally, DC motors are given preference for industrial applications such as electric locomotives, cranes, goods lifts. Because of they have high starting moment; they initially start with high current. This high start-up current must be decreased since it may damage windings of the motor and increases power consumption. It could be controlled by an appropriate driver system and controller. The nature of fuzzy logic control has adaptive characteristics that can achieve robust response to a system with uncertainty, parameter variation, and load disturbance. In this paper, fuzzy logic based control of start-up current of a Buck-Boost Converter fed serial DC motor is examined through computer simulation. In order to see the advantages of fuzzy logic control, classical PI control has applied to the same motor, under same circumstances and has been compared. C++ Builder software has been used for the simulation. According to the simulation results, plainly, fuzzy logic control has stronger responses than classical PI control and uses lower current at starting moment.

  8. Current-Voltage Characteristics of DC Discharge in Micro Gas Jet Injected into Vacuum Environment

    International Nuclear Information System (INIS)

    Matra, K; Furuta, H; Hatta, A

    2013-01-01

    A current-voltage characteristic of direct current (DC) gas discharge operated in a micro gas jet injected into a secondary electron microscope (SEM) chamber is presented. Ar gas was injected through a 30 μm orifice gas nozzle (OGN) and was evacuated by an additional pump to keep the high vacuum environment. Gas discharges were ignited between the OGN as anode and a counter electrode of Si wafer. The discharge was self-pulsating in most of the cases while it was stable at lower pressure, larger gap length, and larger time averaged current. The self-pulsating discharge was oscillated by the RC circuit consisting of a stray capacitor and a large ballast resistor. The real time plots of voltage and current during the pulsating was investigated using a discharge model.

  9. Design of current source DC/DC converter and inverter for 2kW fuel cell application

    DEFF Research Database (Denmark)

    Andreiciks, A.; Steiks, I.; Krievs, O.

    2013-01-01

    In order to use hydrogen fuel cell in domestic applications either as main power supply or backup power source, the low DC output voltage of the fuel cell has to be matched to the voltage level and frequency of the utility grid AC voltage. The interfacing power converter systems usually consist...... system is designed for interfacing a 2kW proton exchange membrane (PEM) fuel cell....

  10. Development of a high current 250 kV photocathode dc gun

    International Nuclear Information System (INIS)

    Nishimori, Nobuyuki; Nagai, Ryoji; Sawamura, Masaru; Hajima, Ryoichi

    2016-01-01

    We have developed a high current photocathode dc gun at JAEA for the next generation light sources such as an energy recovery linac and high-repetition rate X-ray free electron laser. The gun is equipped with a multialkali photocathode preparation system. Quantum efficiency of 0.37% at 532 nm was obtained for a Cs_3Sb photocathode. The gun was high voltage conditioned up to 230 kV with a cathode electrode. Beam generation test from the multialkali photocathode will be performed by the end of FY2015. (author)

  11. Capacitance measurement of Josephson tunnel junctions with microwave-induced dc quasiparticle tunneling currents

    International Nuclear Information System (INIS)

    Hamasaki, K.; Yoshida, K.; Irie, F.; Enpuku, K.

    1982-01-01

    The microwave response of the dc quasiparticle tunneling current in Josephson tunnel junctions, where the Josephson current is suppressed by an external magnetic field, has been studied quantitatively in order to clarify its characteristics as a probe for the measurement of the junction capacitance. Extensive experiments for both small and long junctions are carried out for distinguishing between microwave behaviors of lumped and distributed constant junctions. It is shown that the observed voltage dependence of the dc quasiparticle tunneling current modified by an applied rf field is in good agreement with a theoretical result which takes into account the influence of the microwave circuit connected to the junction. The comparison between theory and experiment gives the magnitude of the internal rf field in the junction. Together with the applied rf field, this internal rf field leads to the junction rf impedance which is dominated by the junction capacitance in our experimental condition. In the case of lumped junctions, this experimental rf impedance is in reasonable agreement with the theoretical one with the junction capacitance estimated from the Fiske step of the distributed junction fabricated on the same substrate; the obtained ratio of the experimental impedance to the theoretical one is approximately 0.6--1.7. In the case of distributed junctions, however, experimental values of their characteristic impedances are approximately 0.2--0.3 of theoretical values calculated by assuming the one-dimensional junction model and taking account of the standing-wave effect in the junction

  12. A novel concept of fault current limiter based on saturable core in high voltage DC transmission system

    Science.gov (United States)

    Yuan, Jiaxin; Zhou, Hang; Gan, Pengcheng; Zhong, Yongheng; Gao, Yanhui; Muramatsu, Kazuhiro; Du, Zhiye; Chen, Baichao

    2018-05-01

    To develop mechanical circuit breaker in high voltage direct current (HVDC) system, a fault current limiter is required. Traditional method to limit DC fault current is to use superconducting technology or power electronic devices, which is quite difficult to be brought to practical use under high voltage circumstances. In this paper, a novel concept of high voltage DC transmission system fault current limiter (DCSFCL) based on saturable core was proposed. In the DCSFCL, the permanent magnets (PM) are added on both up and down side of the core to generate reverse magnetic flux that offset the magnetic flux generated by DC current and make the DC winding present a variable inductance to the DC system. In normal state, DCSFCL works as a smoothing reactor and its inductance is within the scope of the design requirements. When a fault occurs, the inductance of DCSFCL rises immediately and limits the steepness of the fault current. Magnetic field simulations were carried out, showing that compared with conventional smoothing reactor, DCSFCL can decrease the high steepness of DC fault current by 17% in less than 10ms, which verifies the feasibility and effectiveness of this method.

  13. Virtual resistance-based control strategy for DC link regeneration protection and current sharing in uninterruptible power supply

    DEFF Research Database (Denmark)

    Lu, Jinghang; Guan, Yajuan; Savaghebi, Mehdi

    2017-01-01

    To address the DC link voltage regeneration issue in parallel Uninterruptible Power Supply (UPS) system, a DC link voltage protection (DCVP) method through online virtual resistance regulation is proposed. The proposed control strategy is able to protect the DC link from overvoltage that may...... trigger the protection mechanism of the UPS system. Moreover, a current sharing control strategy by regulating the virtual resistance is proposed to address the circulating current caused by the active power feeding. Finally, the feasibility of the proposed method is verified by experimental results from...

  14. A Robust Suboptimal Current Control of an Interlink Converter for a Hybrid AC/DC Microgrid

    Directory of Open Access Journals (Sweden)

    Ismi Rosyiana Fitri

    2018-05-01

    Full Text Available A hybrid AC/DC microgrid is established with the aim of exploiting numerous types of renewable energy to meet the needs of different loads. The microgrid is decomposed by AC DC sub-grids which are connected by an interlink converter (IC. To maintain the security and reliability of the microgrid, an automatic controller for the interlink converter is needed. In this paper, we propose a Linear Matrix Inequalities (LMI-based current control method for the interlink converter. As the main features here, the interlink converter permits bidirectional power exchange between both sub-grids when a power–demand imbalance occurs in one sub-grid regardless of the converter system parameters. Simulations with various filter parameters are performed using the Matlab/Simulink software to validate the effectiveness of the proposed controller. In comparison with the existing Linear Quadratic Regulator (LQR-based current control, the proposed method is more robust against unknown system parameters and high load perturbation.

  15. Design of the corona current measurement sensor with wide bandwidth under dc ultra-high-voltage environment

    International Nuclear Information System (INIS)

    Liu, Yingyi; Yuan, Haiwen; Yang, Qinghua; Cui, Yong

    2011-01-01

    The research in the field of corona discharge, which is one of the key technologies, can help us to realize ultra-high-voltage (UHV) power transmission. This paper proposes a new sampling resistance sensor to measure the dc UHV corona current in a wide band. By designing the structural and distributed parameters of the sensor, the UHV dielectric breakdown performance and the wide-band measuring characteristics of the sensor are satisfied. A high-voltage discharge test shows that the designed sensor can work under a 1200 kV dc environment without the occurrence of corona discharge. A frequency characteristic test shows that the measuring bandwidth of the sensor can be improved from the current 4.5 to 20 MHz. The test results in an actual dc UHV transmission line demonstrate that the sensor can accurately measure the corona current under the dc UHV environment

  16. DC current in the collisionless limit induced by a travelling wave

    International Nuclear Information System (INIS)

    Midzuno, Yukio; Fukuda, Masaji.

    1977-03-01

    The DC current induced by a Travelling Wave is calculated on the basis of the assumption that the distribution function of electrons in the collisionless limit should be determined by a condition derived from the nature of the collision operator, as in the case of the calculation of the neoclassical transport in a torus. The resultant net current is found to have the same parameter dependence as the one derived in a previous analysis, in which we assumed the initial distribution of electrons to be uniform and isotropic Maxwellian. The numerical coefficient is found, however, to be a little different from the previous one. The importance of the accurate matching of the distribution function of untrapped particles to the Maxwellian one for large velocity is demonstrated. (auth.)

  17. A study on DC hybrid three-phase fault current limiting interrupter for a power distribution system

    International Nuclear Information System (INIS)

    Shao, Hongtian; Satoh, Tomoyuki; Yamaguchi, Mitsugi; Fukui, Satoshi; Ogawa, Jun; Satoh, Takao; Ishikawa, Hiroyuki

    2005-01-01

    For the purpose of protecting electric power system, many researches and developments of fault current limiters are being performed. The authors studied a dc hybrid three-phase fault current limiting interrupter (FCLI) composed of a superconducting reactor and an S/N transition element, connected in series each other. The dc hybrid type fault current limiting interrupter can limit a fault current by means of the inductance of high temperature superconducting (HTS) coil together with the normal transition of HTS bulk material (HTSB). In the case of an accident, the normal transition of the bulk material can be accelerated by the magnetic field of the HTS coil. In this paper, the dc hybrid type fault current limiting interrupter for 5.5 km long 6.6 kV-600 A power distribution system is analyzed, and performances of fault current limitation and interruption are confirmed. Moreover, a reclosing operation is discussed for this power distribution system

  18. STATISTIC, PROBABILISTIC, CORRELATION AND SPECTRAL ANALYSES OF REGENERATIVE BRAKING CURRENT OF DC ELECTRIC ROLLING STOCK

    Directory of Open Access Journals (Sweden)

    A. V. Nikitenko

    2014-04-01

    Full Text Available Purpose. Defining and analysis of the probabilistic and spectral characteristics of random current in regenerative braking mode of DC electric rolling stock are observed in this paper. Methodology. The elements and methods of the probability theory (particularly the theory of stationary and non-stationary processes and methods of the sampling theory are used for processing of the regenerated current data arrays by PC. Findings. The regenerated current records are obtained from the locomotives and trains in Ukraine railways and trams in Poland. It was established that the current has uninterrupted and the jumping variations in time (especially in trams. For the random current in the regenerative braking mode the functions of mathematical expectation, dispersion and standard deviation are calculated. Histograms, probabilistic characteristics and correlation functions are calculated and plotted down for this current too. It was established that the current of the regenerative braking mode can be considered like the stationary and non-ergodic process. The spectral analysis of these records and “tail part” of the correlation function found weak periodical (or low-frequency components which are known like an interharmonic. Originality. Firstly, the theory of non-stationary random processes was adapted for the analysis of the recuperated current which has uninterrupted and the jumping variations in time. Secondly, the presence of interharmonics in the stochastic process of regenerated current was defined for the first time. And finally, the patterns of temporal changes of the correlation current function are defined too. This allows to reasonably apply the correlation functions method in the identification of the electric traction system devices. Practical value. The results of probabilistic and statistic analysis of the recuperated current allow to estimate the quality of recovered energy and energy quality indices of electric rolling stock in the

  19. Influence of DC arc current on the formation of cobalt-based nanostructures

    Science.gov (United States)

    Orpe, P. B.; Balasubramanian, C.; Mukherjee, S.

    2017-08-01

    The synthesis of cobalt-based magnetic nanostructures using DC arc discharge technique with varying arc current is reported here. The structural, morphological, compositional and magnetic properties of these nanostructures were studied as a function of applied arc current. Various techniques like X-ray diffraction, transmission electron microscopy, EDAX and vibrating sample magnetometry were used to carry out this study and the results are reported here. The results clearly indicate that for a given oxygen partial pressure, an arc current of 100 A favours the formation of unreacted cobalt atomic species. Also change in arc current leads to variation in phase, diversity in morphology etc. Other property changes such as thermal changes, mechanical changes etc. are not addressed here. The magnetic characterization further indicates that the anisotropy in shape plays a crucial role in deciding the magnetic properties of the nanostructured materials. We have quantified an interesting result in our experiment, that is, for a given partial pressure, 100 A arc current results in unique variation in structural and magnetic properties as compared to other arc currents.

  20. Interactions Between Indirect DC-Voltage Estimation and Circulating Current Controllers of MMC-Based HVDC Transmission Systems

    DEFF Research Database (Denmark)

    Wickramasinghe, Harith R.; Konstantinou, Georgios; Pou, Josep

    2018-01-01

    Estimation-based indirect dc-voltage control in MMCs interacts with circulating current control methods. This paper proposes an estimation-based indirect dc-voltage control method for MMC-HVDC systems and analyzes its performance compared to alternative estimations. The interactions between......-state and transient performance is demonstrated using a benchmark MMC-HVDC transmission system, implemented in a real-time digital simulator. The results verify the theoretical evaluations and illustrate the operation and performance of the proposed indirect dc-voltage control method....

  1. Contributions to yield strength in an ultrafine grained 1050 aluminum alloy after DC current annealing

    International Nuclear Information System (INIS)

    Cao, Yiheng; He, Lizi; Zhou, Yizhou; Wang, Ping; Cui, Jianzhong

    2016-01-01

    The ultrafine grained (UFG) 1050 aluminum alloy was prepared by equal channel angular pressing at cryogenic temperature (cryoECAP). The evolution of the yield strength and microstructures of UFG 1050 aluminum alloy after direct electric current (DC current) annealing at 150–400 °C for 1 h were investigated by tensile test, electron back scattering diffraction pattern (EBSD) and transmission electron microscopy (TEM). For the cryoECAPed and annealed samples at 150–250 °C, the predominant boundaries are high angle boundaries (HABs) (>60%), many dislocations accumulate at subgrain and/or grain boundaries, the yield strength (126–159 MPa) mainly comes from the dislocation and grain boundary strengthening contributions. While an unusual increase in the yield strength (by 8.1–11.2%) observed in samples annealed at 150–200 °C is attributed to an additional strengthening contribution from the more HABs having stable structures which can act as effective barriers to dislocation motion during tensile deformation. When annealing at 300–400 °C, the microstructures are free of dislocations, the yield strength (29–45 MPa) comes from the grain boundary strengthening contribution. With the application of DC current, the larger grain size, lower dislocation density and higher fraction of LABs having misorientation angle between 3−7° in samples annealed at 150–250 °C result in the lower yield strength, while the smaller average grain sizes in samples annealed at 300–400 °C cause the higher yield strength.

  2. Contributions to yield strength in an ultrafine grained 1050 aluminum alloy after DC current annealing

    Energy Technology Data Exchange (ETDEWEB)

    Cao, Yiheng [Key Lab of Electromagnetic Processing of Materials, Ministry of Education, Northeastern University, Shenyang 110819 (China); He, Lizi, E-mail: helizi@epm.neu.edu.cn [Key Lab of Electromagnetic Processing of Materials, Ministry of Education, Northeastern University, Shenyang 110819 (China); School of Materials Science and Engineering, Northeastern University, Shenyang 110819 (China); Zhou, Yizhou [Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016 (China); Wang, Ping; Cui, Jianzhong [Key Lab of Electromagnetic Processing of Materials, Ministry of Education, Northeastern University, Shenyang 110819 (China); School of Materials Science and Engineering, Northeastern University, Shenyang 110819 (China)

    2016-09-30

    The ultrafine grained (UFG) 1050 aluminum alloy was prepared by equal channel angular pressing at cryogenic temperature (cryoECAP). The evolution of the yield strength and microstructures of UFG 1050 aluminum alloy after direct electric current (DC current) annealing at 150–400 °C for 1 h were investigated by tensile test, electron back scattering diffraction pattern (EBSD) and transmission electron microscopy (TEM). For the cryoECAPed and annealed samples at 150–250 °C, the predominant boundaries are high angle boundaries (HABs) (>60%), many dislocations accumulate at subgrain and/or grain boundaries, the yield strength (126–159 MPa) mainly comes from the dislocation and grain boundary strengthening contributions. While an unusual increase in the yield strength (by 8.1–11.2%) observed in samples annealed at 150–200 °C is attributed to an additional strengthening contribution from the more HABs having stable structures which can act as effective barriers to dislocation motion during tensile deformation. When annealing at 300–400 °C, the microstructures are free of dislocations, the yield strength (29–45 MPa) comes from the grain boundary strengthening contribution. With the application of DC current, the larger grain size, lower dislocation density and higher fraction of LABs having misorientation angle between 3−7° in samples annealed at 150–250 °C result in the lower yield strength, while the smaller average grain sizes in samples annealed at 300–400 °C cause the higher yield strength.

  3. Performance evaluation of directly photovoltaic powered DC PM (direct current permanent magnet) motor – propeller thrust system

    International Nuclear Information System (INIS)

    Atlam, Ozcan; Kolhe, Mohan

    2013-01-01

    Photovoltaic (PV) powered directly coupled electro-mechanical system has wide applications (e.g. PV powered cooling fans in green houses, PV water pumping system, solar vehicles). The objective of this work is to analyse the operation of directly PV powered DC PM (direct current permanent magnet) motor – propeller system for selection of motor parameters. The performance of such system mainly depends on the incident solar radiation, operating cell temperature, DC motor and propeller load parameters. It is observed that the operating points of the PV DC PM motor – propeller system matches very closely with the maximum power points (MPPs) of the PV array, if the DC PM motor – propeller parameters have been properly selected. It is found that for a specific application of such type of system, matching of torque–speed operating points with respect to the maximum power points of PV array are very important. It is ascertained through results that the DC PM motor's armature resistance, magnetic field constant, starting current to overcome the starting torque and torque coefficient are the main parameters. In designing a PV powered DC PM motor for a specific application, selection of these parameters are important for maximum utilization of the PV array output. The results of this system are useful for designing of directly PV powered DC PM motor's for aerodynamic applications. - Highlights: • We analyse the performance of directly PV powered DC PM motor – propeller system. • We examine PV electro-mechanical system for selection of DC motor parameters. • Matching of torque–speed curve to maximum power points of PV array is important

  4. Polyester fabric coated with Ag/ZnO composite film by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Yuan, Xiaohong, E-mail: yxhong1981_2004@126.com [Key Laboratory of Eco-Textiles, Ministry of Education, Jiangnan University, Wuxi 214122, Jiangsu (China); Faculty of Clothing and Design, Minjiang University, Fuzhou 350121, Fujian (China); Xu, Wenzheng, E-mail: xwz8199@126.com [Key Laboratory of Eco-Textiles, Ministry of Education, Jiangnan University, Wuxi 214122, Jiangsu (China); Huang, Fenglin, E-mail: windhuang325@163.com [Key Laboratory of Eco-Textiles, Ministry of Education, Jiangnan University, Wuxi 214122, Jiangsu (China); Chen, Dongsheng, E-mail: mjuchen@126.com [Faculty of Clothing and Design, Minjiang University, Fuzhou 350121, Fujian (China); Wei, Qufu, E-mail: qfwei@jiangnan.edu.cn [Key Laboratory of Eco-Textiles, Ministry of Education, Jiangnan University, Wuxi 214122, Jiangsu (China)

    2016-12-30

    Highlights: • Ag/ZnO composite film was successfully deposited on polyester fabric by magnetron sputtering technique. • Ag film was easily oxidized into Ag{sub 2}O film in high vacuum oxygen environment. • The zinc film coated on the surface of Ag film before RF reactive sputtering could protect the silver film from oxidation. • Polyester fabric coated with Ag/ZnO composite film can obtained structural color. • The anti-ultraviolet and antistatic properties of polyester fabric coated with Ag/ZnO composite film all were good. - Abstract: Ag/ZnO composite film was successfully deposited on polyester fabric by using direct current (DC) magnetron sputtering and radio frequency (RF) magnetron reaction sputtering techniques with pure silver (Ag) and zinc (Zn) targets. X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD) were used to examine the deposited film on the fabric. It was found that the zinc film coated on Ag film before RF reactive sputtering could protect the silver film from oxidation. Anti-ultraviolet property and antistatic property of the coated samples using different magnetron sputtering methods were also investigated. The experimental results showed that Ag film was oxidized into in Ag{sub 2}O film in high vacuum oxygen environment. The deposition of Zn film on the surface of the fabric coated with Ag film before RF reactive sputtering, could successfully obtained Ag/ZnO composite film, and also generated structural color on the polyester fabric.

  5. Analysis of Three-Phase Rectifier Systems with Controlled DC-Link Current Under Unbalanced Grids

    DEFF Research Database (Denmark)

    Kumar, Dinesh; Davari, Pooya; Zare, Firuz

    2017-01-01

    Voltage unbalance is the most common disturbance in distribution networks, which give undesirable effects on many grid connected power electronics systems including Adjustable Speed Drive (ASD). Severe voltage unbalance can force three-phase rectifiers into almost single-phase operation, which...... degrades the grid power quality and also imposes a significant negative impact on the ASD system. This major power quality issue affecting the conventional rectifiers can be attenuated by controlling the DC-link current based on an Electronic Inductor (EI) technique. The purpose of this digest...... is to analyze and compare the performance of an EI with a conventional three-phase rectifier under unbalanced grid conditions. Experimental and simulation results validate the proposed mathematical modelling. Further analysis and benchmarking will be provided in the final paper....

  6. Current redistribution effects on superconducting d.c, and microwave measurements

    International Nuclear Information System (INIS)

    Barra, M; Cassinese, A; Vaglio, R

    2006-01-01

    In the last two decades, non conventional behavior of the d.c. transport properties of superconductors, with the appearance of anomalous peaks at the transition, have been investigated and interpreted in different ways. In several cases it was recognized that the behavior can be due to current redistribution effects related to the non-homogeneous nature of the measured superconducting sample. In this paper we will briefly review and discuss these effects and, referring to simple concentrated constant equivalent circuits, we will show that sample non-homogeneity can produce the observed features. Then, in the same framework, by performing specific simulations on planar resonators, we will show that anomalous peaks in temperature dependence of the resonant frequency and of the extracted surface reactance can occur at the transition temperature of minority, lower Tc, superconducting phases

  7. ELECTRICAL PROPERTIES OF DC REACTIVE MAGNETRON ...

    African Journals Online (AJOL)

    Mgina

    value of the AC resistivity was given by the ZnO:Al film with the highest value of ... Compared to other thin film ... critical parameters in determining the ... approach in studying the electronic transport ..... J 2009 Electrical and optical studies of.

  8. The n-type conduction of indium-doped Cu{sub 2}O thin films fabricated by direct current magnetron co-sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Cai, Xing-Min; Su, Xiao-Qiang; Ye, Fan, E-mail: yefan@szu.edu.cn; Wang, Huan; Tian, Xiao-Qing; Zhang, Dong-Ping; Fan, Ping; Luo, Jing-Ting; Zheng, Zhuang-Hao; Liang, Guang-Xing [Institute of Thin Film Physics and Applications, School of Physical Science and Technology and Shenzhen Key Laboratory of Sensor Technology, Shenzhen University, Shenzhen 518060 (China); Roy, V. A. L. [Center of Super-Diamond and Advanced Films (COSDAF) and Department of Physics and Materials Science, City University of Hong Kong, Kowloon Tong, Hong Kong (China)

    2015-08-24

    Indium-doped Cu{sub 2}O thin films were fabricated on K9 glass substrates by direct current magnetron co-sputtering in an atmosphere of Ar and O{sub 2}. Metallic copper and indium disks were used as the targets. X-ray diffraction showed that the diffraction peaks could only be indexed to simple cubic Cu{sub 2}O, with no other phases detected. Indium atoms exist as In{sup 3+} in Cu{sub 2}O. Ultraviolet-visible spectroscopy showed that the transmittance of the samples was relatively high and that indium doping increased the optical band gaps. The Hall effect measurement showed that the samples were n-type semiconductors at room temperature. The Seebeck effect test showed that the films were n-type semiconductors near or over room temperature (<400 K), changing to p-type at relatively high temperatures. The conduction by the samples in the temperature range of the n-type was due to thermal band conduction and the donor energy level was estimated to be 620.2–713.8 meV below the conduction band. The theoretical calculation showed that indium doping can raise the Fermi energy level of Cu{sub 2}O and, therefore, lead to n-type conduction.

  9. Direct current magnetron sputtered ZrB{sub 2} thin films on 4H-SiC(0001) and Si(100)

    Energy Technology Data Exchange (ETDEWEB)

    Tengdelius, Lina, E-mail: lina.tengdelius@liu.se [Department of Physics, Chemistry, and Biology (IFM), Linköping University, SE-581 83 Linköping (Sweden); Samuelsson, Mattias [Impact Coatings AB, Westmansgatan 29, SE-582 16 Linköping (Sweden); Jensen, Jens; Lu, Jun; Hultman, Lars; Forsberg, Urban; Janzén, Erik; Högberg, Hans [Department of Physics, Chemistry, and Biology (IFM), Linköping University, SE-581 83 Linköping (Sweden)

    2014-01-01

    ZrB{sub 2} thin films have been synthesized using direct current magnetron sputtering from a ZrB{sub 2} compound target onto 4H-SiC(0001) and Si(100) substrates kept at different temperatures (no heating, 400 °C, and 550 °C), and substrate bias voltage (− 20 V to − 80 V). Time-of-flight energy elastic recoil detection analysis shows that all the films are near stoichiometric and have a low degree of contaminants, with O being the most abundant (< 1 at.%). The films are crystalline, and their crystallographic orientation changes from 0001 to a more random orientation with increased deposition temperature. X-ray diffraction pole figures and selected area electron diffraction patterns of the films deposited without heating reveal a fiber-texture growth. Four point probe measurements show typical resistivity values of the films ranging from ∼ 95 to 200 μΩ cm, decreasing with increased growth temperature and substrate bias. - Highlights: • ZrB{sub 2} films have been deposited on 4H-SiC(0001) and Si(100). • Film composition correlates well to that of the target. • Level of contamination in the films is low. • Film resistivity values range from ∼ 95 to 200 μΩ cm.

  10. Open-loop magneto-resistance sensor-based DC current transformer for FAIR

    Energy Technology Data Exchange (ETDEWEB)

    Soliman, Eman; Hofmann, Klaus [Technical University Darmstadt (Germany); Reeg, Hansjoerg; Schwickert, Marcus [GSI Helmholtzzentrum fuer Schwerionenforschung, Darmstadt (Germany)

    2016-07-01

    A Novel DC Current Transformer (N-DCCT) is currently under development for FAIR. The N-DCCT is going to be installed inside the SIS100 synchrotron. The proposed system is no longer based on magnetic modulation principle of the conventional DCCT. Instead, a Magneto-resistance sensor is utilized to detect the magnetic field of the ion-beam. For a first prototype the N-DCCT is realized as an open-loop system. It consists of a high permeability slotted ring core and up to two MR sensors. The maximum ion-beam current magnetic field is concentrated inside the ring core air gaps. MR sensors are placed inside the core air gaps. The sensor output voltage is directly proportional to the ion-beam current. The system is implemented using commercial Tunneling MR sensors. Measurements using one single sensor, as well as the application of two sensors are presented in this work. The sensitivity of the proposed N-DCCT is 0.566 [V/A] for one single MR sensor and 1.56 [V/A] when two sensors are implemented.

  11. Space Vector Modulation for DC-Link Current Ripple Reduction in Back-To-Back Current Source Converters for Microgrid Applications

    DEFF Research Database (Denmark)

    Guo, Xiaoqiang; Xu, David; Guerrero, Josep M.

    2015-01-01

    Back-to-back converters have been typically used to interconnect the microgrids. For a back-to-back current source converter, the dc-link current ripple is one of the important parameters. A large ripple will cause the electromagnetic interference, undesirable high-frequency losses, and system...... instability. Conventionally, with a given switching frequency and rated voltage, the current ripple can be reduced by increasing the dc-link inductor, but it leads to bulky size, high cost and slow dynamic response. In order to solve this problem, this paper reveals that the current ripple can...

  12. Torque ripple reduction of brushless DC motor with harmonic current injection based on integral terminal sliding mode control

    DEFF Research Database (Denmark)

    Boroujeni, Mojtaba Shirvani; Markadeh, Gholamreza Arab; Soltani, Jafar

    2018-01-01

    Brushless Harmonic current injection to the stator windings is one of the most effective methods for torque ripple reduction of brushless DC motors. Because of multi harmonic contents of the stator currents, the conventional methods based on rotational reference frame cannot be used to calculate...

  13. Design and development of DC high current sensor using Hall-Effect method

    Science.gov (United States)

    Dewi, Sasti Dwi Tungga; Panatarani, C.; Joni, I. Made

    2016-02-01

    This paper report a newly developed high DC current sensor by using a Hall effect method and also the measurement system. The Hall effect sensor receive the magnetic field generated by a current carrying conductor wire. The SS49E (Honeywell) magnetoresistive sensor was employed to sense the magnetic field from the field concentrator. The voltage received from SS49E then converted into digital by using analog to digital converter (ADC-10 bit). The digital data then processed in the microcontroller to be displayed as the value of the electric current in the LCD display. In addition the measurement was interfaced into Personal Computer (PC) using the communication protocols of RS232 which was finally displayed in real-time graphical form on the PC display. The performance test on the range ± 40 Ampere showed that the maximum relative error is 5.26%. It is concluded that the sensors and the measurement system worked properly according to the design with acceptable accuracy.

  14. The microstructure and properties of titanium dioxide films synthesized by unbalanced magnetron sputtering

    International Nuclear Information System (INIS)

    Leng, Y.X.; Chen, J.Y.; Yang, P.; Sun, H.; Huang, N.

    2007-01-01

    In this work, titanium oxide films were deposited on Ti6Al4V and Si (1 0 0) by DC unbalanced magnetron sputtering method at different oxygen pressure. X-ray diffraction (XRD), microhardness tests, pin-on-disk wear experiments, surface contact angle tests and platelet adhesion investigation were conducted to evaluate the properties of the films. The corrosion behavior of titanium dioxide films was characterized by potentiodynamic polarization. The results showed that titanium oxide films deposited by unbalance magnetron sputtering were compact and could obviously enhance microhardness, wear resistance of titanium alloy substrate. Potentiodynamic polarization curves showed that Ti-6Al-4V deposited with titanium dioxide films had lower dissolution currents than that of the uncoated one. The results of in vitro hemocompatibility analyses indicated that the blood compatibility of the titanium dioxide films with bandgap 3.2 eV have better blood compatibility

  15. Studies on the reactive deposition of TiN{sub x} and TiO{sub x} in a DC magnetron plasma; Untersuchungen zur reaktiven Abscheidung von TiN{sub x} und TiO{sub x} in einem DC-Magnetronplasma

    Energy Technology Data Exchange (ETDEWEB)

    Wrehde, Stefan

    2009-10-30

    In the present thesis experiments in a magnetron coating plasma on the (reactive) deposition of Ti, Ti{sub x}, and TiO{sub x} layers were performed. The aim was to meet by correlation of measurements of the ion and energy current on the substrate during the coating procedure with studies of the properties of the deposed layers statements about the connections of deposition conditions and layer properties. The layers deposed in the argon plasma without reactive gas contained beside titanium as main component also small concentrations of oxygen in the range of 8..15%, no completely pure respectively metallic titanium layers could be deposed. In the layers deposed in the argon-nitrogen plasma the increasing nitrogen admixture to the plasma leads mto an increasing nitridation of the layers. The measurements of the crystal structure show higher macroscopical stresses in the layers deposed in the unbalanced mode. From the combination of the higher thicknesses and densities of the layers deposed in the unbalanced mode in this operation mode of the magnetron higher deposition rates result. In the argon-oxygen plasma at increasing oxygen part it comes to a distinct increasement of the oxygen concentration at simultaneous decreasement of the relative titanium concentration in the deposed layers. The deposition in the unbalanced mode leads against the that in the balanced mode to a slightly lower oxygen concentration in the layers. The measurements of the crystal structure show also a lower oxygen insertion and tendentially lower macroscopical stresses in the layers deposed in the unbalanced mode. The measured densities of the layers deposed in the unbalanced mode are distinctly lower than to be expected, and above all smaller than those of the layers deposed in the balanced mode.

  16. Superconducting coil manufacturing method for low current dc beam line magnets

    International Nuclear Information System (INIS)

    Satti, J.A.

    1977-01-01

    A method of manufacturing superconducting multipole coils for 40 to 50 kG dc beam line magnets with low current is described. Small coils were built and tested successfully to short sample characteristics. The coils did not train after the first cooldown. The coils are porous and well cooled to cope with mechanical instability and energy deposited in the coil from the beam particles. The coils are wound with insulated strand cable. The cable is shaped rectangularly for winding simplicity and good tolerances. After the coil is wound, the insulated strands are electrically connected in series. This reduces the operating current and, most important, improves the coil quench propagation due to heat conduction of one strand adjacent to the other. A well distributed quench allows the magnet energy to distribute more uniformly to the copper in the superconductor wire, giving self-protected coils. A one-meter long, 43 kG, 6-inch bore tube superconducting dipole is now being fabricated. The porous coil design and coil winding methods are discussed

  17. On the control of deposition process for enhanced mechanical properties of nc-TiC/a-C: H coatings with DC magnetron sputtering at low or high ion flux

    Czech Academy of Sciences Publication Activity Database

    Souček, P.; Schmidtová, T.; Zábranský, L.; Buršíková, V.; Vašina, P.; Caha, O.; Buršík, Jiří; Peřina, Vratislav; Mikšová, Romana; Pei, Y.; de Hosson, J. T. M.

    Roč. 255, 25 September (2014), s. 8-14 ISSN 0257-8972 Institutional support: RVO:68081723 ; RVO:61389005 Keywords : enhanced mechanical properties * ion flux on the substrate * magnetron sputtering Subject RIV: BL - Plasma and Gas Discharge Physics Impact factor: 1.998, year: 2014

  18. B-periodic oscillations in the Hall-resistance induced by a dc-current-bias under combined microwave-excitation and dc-current bias in the GaAs/AlGaAs 2D system.

    Science.gov (United States)

    Liu, Han-Chun; Reichl, C; Wegscheider, W; Mani, R G

    2018-05-18

    We report the observation of dc-current-bias-induced B-periodic Hall resistance oscillations and Hall plateaus in the GaAs/AlGaAs 2D system under combined microwave radiation- and dc bias excitation at liquid helium temperatures. The Hall resistance oscillations and plateaus appear together with concomitant oscillations also in the diagonal magnetoresistance. The periods of Hall and diagonal resistance oscillations are nearly identical, and source power (P) dependent measurements demonstrate sub-linear relationship of the oscillation amplitude with P over the span 0 < P ≤ 20 mW.

  19. Deposition and characterization of pulsed direct current magnetron sputtered Al{sub 95.5}Cr{sub 2.5}Si{sub 2} (N{sub 1-x}O{sub x}) thin films

    Energy Technology Data Exchange (ETDEWEB)

    Najafi, H., E-mail: hossein.najafi@epfl.c [Institut de Physique de la Matiere Condensee (IPMC), Ecole Polytechnique Federale de Lausanne (EPFL), CH-1015, Lausanne (Switzerland); Shetty, A.; Karimi, A. [Institut de Physique de la Matiere Condensee (IPMC), Ecole Polytechnique Federale de Lausanne (EPFL), CH-1015, Lausanne (Switzerland); Morstein, M. [Platit AG, Advanced Coating Systems, CH-2545 Selzach (Switzerland)

    2010-10-29

    Aluminum rich oxynitride thin films were prepared using pulsed direct current (DC) magnetron sputtering from an Al{sub 95.5}Cr{sub 2.5}Si{sub 2} (at.%) target. Two series of films were deposited at 400 {sup o}C and 650 {sup o}C by changing the O{sub 2}/(O{sub 2} + N{sub 2}) ratio in the reactive gas from 0% (pure nitrides) to 100% (pure oxides). The films were investigated by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM) and nanoindentation. The results showed the existence of three different regions of microstructure and properties with respect to the oxygen concentration. For the samples deposited at 650 {sup o}C in the nitrogen rich region (O{sub 2}/(O{sub 2} + N{sub 2}) {<=} 0.08), the formation of the h-AlN (002) and Al-N bond were confirmed by XRD and XPS measurements. The hardness of the films was around 30 GPa. In the intermediate region (0.08 {<=} O{sub 2}/(O{sub 2} + N{sub 2}) {<=} 0.24), the presence of an amorphous structure and the shifting of the binding energies to lower values corresponding to non-stoichiometric compounds were observed and the hardness decreased to 12 GPa. The lowering of mechanical properties was attributed to the transition of the clean target to the reacted target under non-steady state deposition conditions. In the oxygen rich region (0.24 {<=} (O{sub 2}/(O{sub 2} + N{sub 2}) {<=} 1), the existence of {alpha}-Al{sub 2}O{sub 3}-(113), {alpha}-Al{sub 2}O{sub 3}-(116) and Al-O bonds confirmed the domination of this phase in this region of deposition and the hardness increased again to 30-35 GPa. Films deposited at 400 {sup o}C showed the same behavior except in the oxygen rich region, where hardness remains low at about 12-14 GPa.

  20. AC impedance behavior of a practical-size single-cell SOFC under DC current

    Energy Technology Data Exchange (ETDEWEB)

    Momma, Akihiko; Kaga, Yasuo; Takano, Kiyonami; Nozaki, Ken; Negishi, Akira; Kato, Ken; Kato, Tohru [Fuel Cell Group, Energy Electronics Institute, National Institute of Advanced Industrial Science and Technology, Umezono Tsukuba-shi, Ibaraki 305-8568 (Japan); Inagaki, Toru; Yoshida, Hiroyuki [Energy Use R and D Center, The Kansai Electric Power Company, Inc., 11-20 Nakoji, 3-Chome, Amagasaki, Hyogo 661-0974 (Japan); Hosoi, Kei; Hoshino, Koji; Akbay, Taner; Akikusa, Jun; Yamada, Masaharu; Chitose, Norihisa [Central Research Institute, Naka Research Center, Mitsubishi Materials Corp. 1002-14 Mukohyama, Naka-machi, Naka-gun, Ibaraki 311-0102 (Japan)

    2004-10-29

    AC impedance measurements were carried out using practical-size planar disc-type SOFC which employs lanthanum gallate as a solid electrolyte. The data were obtained under practical conditions of gas flow rate and DC current. Under these conditions, the gas conversion impedance (GCI), which originates from the change of the electromotive force (EMF) caused by the change in anodic gaseous concentrations along the flow direction, was observed in the low-frequency range of the data obtained. The overlapping impedance together with GCI on the low-frequency arc was also estimated. Experimentally obtained GCI was in good agreement with that calculated. It was concluded that GCI was predominant in the impedance data obtained under practical conditions. The shift of the high-frequency intercept in the complex impedance diagrams was shown to appear as a result of the change in the distribution of gaseous composition in the anode. The dependency of the low-frequency arc on temperature was also shown, and it was assumed that the overlapped impedance varies as the temperature changes. The validity of the impedance measurement, as a diagnostic means to evaluate the gas flow in SOFC stack, was suggested.

  1. Experimental investigation of the effect of titanium dioxide and barium titanate additives on DC transient currents in low density polyethylene

    DEFF Research Database (Denmark)

    Khalil, M.S; Henk, Peter O; Henriksen, Mogens

    1988-01-01

    The effect of titanium dioxide as a semiconductive additive and barium titanate as a highly polar additive on the DC transient currents in low-density polyethylene is investigated. Experiments were made using thick specimens under a high electric field (>25×106 V/m) and a constant temperature of 40...

  2. Distributed Nonlinear Control with Event-Triggered Communication to Achieve Current-Sharing and Voltage Regulation in DC Microgrids

    DEFF Research Database (Denmark)

    Han, Renke; Meng, Lexuan; Guerrero, Josep M.

    2018-01-01

    combining the state-dependent tolerance with a nonnegative offset. In order to design the event-triggered principle and guarantee the global stability, a generalized dc microgrid model is proposed and proven to be positive definite, based on which Lyapunov-based approach is applied. Furthermore, considering......A distributed nonlinear controller is presented to achieve both accurate current-sharing and voltage regulation simultaneously in dc microgrids considering different line impedances’ effects among converters. Then, an improved event-triggered principle for the controller is introduced through...... for precise real-time information transmission, without sacrificing system performance. Experimental results obtained from a dc microgrid setup show the robustness of the new proposal under normal, communication failure, communication delay and plug-and-play operation conditions. Finally, communication...

  3. Reactive dual magnetron sputtering for large area application

    International Nuclear Information System (INIS)

    Struempfel, J.

    2002-01-01

    Production lines for large area coating demand high productivity of reactive magnetron sputtering processes. Increased dynamic deposition rates for oxides and nitrides were already obtained by using of highly powered magnetrons in combination with advanced sputter techniques. However, besides high deposition rates the uniformity of such coatings has to be carefully considered. First the basics of reactive sputtering processes and dual magnetron sputtering are summarized. Different methods for process stabilization and control are commonly used for reactive sputtering. The Plasma Emission Monitor (PE M) offers the prerequisite for fast acting process control derived from the in-situ intensity measurements of a spectral line of the sputtered target material. Combined by multiple Plasma Emission Monitor control loops segmented gas manifolds are able to provide excellent thin film uniformity at high deposition rates. The Dual Magnetron allows a broad range of processing by different power supply modes. Medium frequency, DC and pulsed DC power supplies can be used for high quality layers. Whereas the large area coating of highly isolating layers like TiO 2 or SiO 2 is dominated by MF sputtering best results for coating with transparent conductive oxides are obtained by dual DC powering of the dual magnetron arrangement. (Author)

  4. A fast novel soft-start circuit for peak current-mode DC—DC buck converters

    International Nuclear Information System (INIS)

    Li Jie; Yang Miao; Sun Weifeng; Lu Xiaoxia; Xu Shen; Lu Shengli

    2013-01-01

    A fully integrated soft-start circuit for DC—DC buck converters is presented. The proposed high speed soft-start circuit is made of two sections: an overshoot suppression circuit and an inrush current suppression circuit. The overshoot suppression circuit is presented to control the input of the error amplifier to make output voltage limit increase in steps without using an external capacitor. A variable clock signal is adopted in the inrush current suppression circuit to increase the duty cycle of the system and suppress the inrush current. The DC—DC converter with the proposed soft-start circuit has been fabricated with a standard 0.13 μm CMOS process. Experimental results show that the proposed high speed soft-start circuit has achieved less than 50 μs start-up time. The inductor current and the output voltage increase smoothly over the whole load range. (semiconductor integrated circuits)

  5. Analysis and Suppression of Zero Sequence Circulating Current in Open Winding PMSM Drives With Common DC Bus

    OpenAIRE

    Zhan, H.; Zhu, Z.Q.; Odavic, M.

    2017-01-01

    In this paper, the zero sequence circulating current in open winding permanent magnet synchronous machine (OW-PMSM) drives with common dc bus is systematically analyzed for the first time. It is revealed that the zero sequence circulating current is affected by zero sequence back-electromotive force, cross coupling voltages in zero sequence from the machine side, pulse-width modulation induced zero sequence voltage, and inverter nonlinearity from the inverter side. Particularly, the influence...

  6. The DC electrical conductivity calculation purely from the dissipative component of the AC conductivity III. statistical ensemble inherent to state with DC current

    International Nuclear Information System (INIS)

    Milinski, N.; Milinski, E.

    2002-01-01

    Amorphous conductors such as liquid metals and alloys are subject to dc conductivity σ calculation here. Principal aim is to explore the impact on σ of the constitutive equation α * = 1, formulated and developed in the preceding papers. The nearly free electrons (NFE) model has been applied. Alkali metals are assumed to fit this model well, and sodium the best. Consequently, the results on these metals have been assumed reliable and relevant for conclusions making. The conclusion we made is: instead of the Fermi radius k f proper for the statistical ensemble in state of thermodynamics equilibrium, a new k ' f number is needed to be introduced into the linear response formula when calculating σ and α * . This k ' f is the length of the corresponding axis of ellipsoid proper for describing the statistical ensemble in the state with dc current. In the traditional interpretation of the linear response formula (Kubo formula) this conversion has been overlooked. Parameters of the mentioned ellipsoids are determined in this paper for a number of liquid metals of valency numbers 1,2,3,4, in addition to a selection of some binary and ternary conducting alloys. It is up to experimental measurements to decide how real this concept of restructuring the statistical ensemble is. (Authors)

  7. Microstructural control of TiC/a-C nanocomposite coatings with pulsed magnetron sputtering

    International Nuclear Information System (INIS)

    Pei, Y.T.; Chen, C.Q.; Shaha, K.P.; De Hosson, J.Th.M.; Bradley, J.W.; Voronin, S.A.; Cada, M.

    2008-01-01

    In this paper, we report some striking results on the microstructural control of TiC/a-C nanocomposite coatings with pulsed direct current (DC) magnetron sputtering. The interface morphology and microstructure evolution as a function of pulse frequency and duty cycle were scrutinized using atomic force microscopy, scanning electron microscopy and high-resolution transmission electron microscopy techniques. It is shown that, with increasing pulse frequency, the nanocomposite coatings exhibit evolutions in morphology of the growing interface from rough to smooth and in the microstructure from strongly columnar to fully columnar-free. In addition, the smoothly growing interface favors the formation of a tailor-made multilayered nanocomposite structure. The fundamental mechanisms are analyzed with the assistance of plasma diagnostic experiments. Ion mass/energy spectrometry measurements reveal that, depending on the frequency and duty cycle of DC pulses, pulsing of the magnetrons can control the flux and energy distribution of Ar + ions over a very broad range for concurrent impingement on the growing interface of deposited coatings, in comparison with DC sputtering. The significantly enhanced energy flux density is thought to be responsible for the 'adatom transfer' in interface smoothening and thus the restraint of columnar growth

  8. Experimental Results of a DC Bus Voltage Level Control for a Load-Controlled Marine Current Energy Converter

    Directory of Open Access Journals (Sweden)

    Johan Forslund

    2015-05-01

    Full Text Available This paper investigates three load control methods for a  marine current energy converter using a vertical axis current  turbine (VACT mounted on a permanent magnet synchronous generator  (PMSG. The three cases are; a fixed AC load, a fixed pulse width  modulated (PWM DC load and DC bus voltage control of a DC  load. Experimental results show that the DC bus voltage control  reduces the variations of rotational speed by a factor of 3.5 at the cost  of slightly increased losses in the generator and transmission lines.  For all three cases, the tip speed ratio \\(\\lambda\\ can be kept close to  the expected \\(\\lambda_{opt}\\. The power coefficient is estimated to be  0.36 at \\(\\lambda_{opt}\\; however, for all three cases, the average  extracted power was about \\(\\sim 19\\\\%. A maximum power point  tracking (MPPT system, with or without water velocity measurement,  could increase the average extracted power.

  9. Pulsed-DC selfsputtering of copper

    International Nuclear Information System (INIS)

    Wiatrowski, A; Posadowski, W M; Radzimski, Z J

    2008-01-01

    At standard magnetron sputtering conditions (argon pressure ∼0.5 Pa) inert gas particles are often entrapped in the formed films. Inert gas contamination can be eliminated by using the self-sustained magnetron sputtering process because it is done in the absence of the inert gas atmosphere. The self-sustained sputtering (SSS) gives also a unique condition during the transport of sputtered particles to the substrate. It is especially useful for filling high aspect ratio submicron scale structures for microelectronics. So far it has been shown that the self-sputtering process can be sustained in the DC operation mode (DC-SSS) only. The main disadvantage of DC-SSS process is instability related to possible arc formation. Usage of pulsed sputtering, similarly to reactive pulsed magnetron sputtering, could eliminate this problem. In this paper results of pulsed-DC self-sustained magnetron sputtering (pulsed DC-SSS) of copper are presented for the first time. The planar magnetron equipped with a 50 mm in diameter and 6 mm thick copper target was powered by DC-power supply modulated by power switch. The maximum target power was about 11 kW (∼550W/cm 2 ). The magnetron operation was investigated as a function of pulsing frequency (20-100 kHz) and duty factor (50-90%). The discharge extinction pressure was determined for these conditions. The plasma emission spectra (400-410nm range) and deposition rates were observed for both DC and pulsed DC sustained self-sputtering processes. The presented results illustrate that stable pulsed DC-SSS process can be obtained at pulsing frequency in the range of 60-100 kHz and duty factor of 70-90%

  10. Pulsed-DC selfsputtering of copper

    Science.gov (United States)

    Wiatrowski, A.; Posadowski, W. M.; Radzimski, Z. J.

    2008-03-01

    At standard magnetron sputtering conditions (argon pressure ~0.5 Pa) inert gas particles are often entrapped in the formed films. Inert gas contamination can be eliminated by using the self-sustained magnetron sputtering process because it is done in the absence of the inert gas atmosphere. The self-sustained sputtering (SSS) gives also a unique condition during the transport of sputtered particles to the substrate. It is especially useful for filling high aspect ratio submicron scale structures for microelectronics. So far it has been shown that the self-sputtering process can be sustained in the DC operation mode (DC-SSS) only. The main disadvantage of DC-SSS process is instability related to possible arc formation. Usage of pulsed sputtering, similarly to reactive pulsed magnetron sputtering, could eliminate this problem. In this paper results of pulsed-DC self-sustained magnetron sputtering (pulsed DC-SSS) of copper are presented for the first time. The planar magnetron equipped with a 50 mm in diameter and 6 mm thick copper target was powered by DC-power supply modulated by power switch. The maximum target power was about 11 kW (~550W/cm2). The magnetron operation was investigated as a function of pulsing frequency (20-100 kHz) and duty factor (50-90%). The discharge extinction pressure was determined for these conditions. The plasma emission spectra (400-410nm range) and deposition rates were observed for both DC and pulsed DC sustained self-sputtering processes. The presented results illustrate that stable pulsed DC-SSS process can be obtained at pulsing frequency in the range of 60-100 kHz and duty factor of 70-90%.

  11. A Circulating-Current Suppression Method for Parallel-Connected Voltage-Source Inverters With Common DC and AC Buses

    DEFF Research Database (Denmark)

    Wei, Baoze; Guerrero, Josep M.; Quintero, Juan Carlos Vasquez

    2017-01-01

    This paper presents a theoretical study with experimental validation of a circulating-current suppression method for parallel operation of three-phase voltage source inverters (VSI), which may be suitable for modular parallel uninterruptible power supply systems or hybrid AC/DC microgrid applicat......This paper presents a theoretical study with experimental validation of a circulating-current suppression method for parallel operation of three-phase voltage source inverters (VSI), which may be suitable for modular parallel uninterruptible power supply systems or hybrid AC/DC microgrid......, and added into the conventional droop plus virtual impedance control. In the control architecture, the reference voltages of the inverters are generated by the primary control loop which consists of a droop control and a virtual impedance. The secondary control is used to compensate the voltage drop...

  12. ac loss and dc critical current densities of Nb3Sn tapes by the solid state diffusion process

    International Nuclear Information System (INIS)

    Suenaga, M.; Klamut, C.; Bussiere, J.F.

    1976-01-01

    The effects of metallurgical processing on 60 Hz ac losses and dc critical currents in Nb 3 Sn tapes fabricated by the solid state diffusion technique were investigated. An addition of Al to the Cu--Sn alloy for the matrix resulted in large reduction in the ac losses of Nb 3 Sn tapes, but the highest linear critical current densities were observed in Nb 3 Sn tapes produced with a Nb-1 wt percent Zr core in a Cu-13 wt percent Sn matrix. Values of the losses and the critical currents in these tapes can meet the present requirements for the ac superconducting power cables

  13. Magnetron plasma and nanotechnology

    International Nuclear Information System (INIS)

    Kashtanov, Pavel V; Smirnov, Boris M; Hippler, Rainer

    2007-01-01

    Magnetron plasma processes involving metal atoms and clusters are reviewed. The formation of metal atoms near the cathode and their nucleation in a buffer gas flow are discussed. The flow of a buffer gas with metal clusters through a magnetron chamber disturbs the equilibrium between the buffer gas flow and clusters near the exit orifice and is accompanied by cluster attachment to the chamber walls. Cluster charging far off the cathode, the disturbance of equilibrium between the buffer gas flow and cluster drift, and the attachment of charged clusters to the chamber walls - the factors determining the output parameters of the cluster beam escaping the magnetron chamber - are analyzed. Cluster deposition on a solid surface and on dusty plasma particles is considered. (reviews of topical problems)

  14. Simulation of the electric potential and plasma generation coupling in magnetron sputtering discharges

    Science.gov (United States)

    Trieschmann, Jan; Krueger, Dennis; Schmidt, Frederik; Brinkmann, Ralf Peter; Mussenbrock, Thomas

    2016-09-01

    Magnetron sputtering typically operated at low pressures below 1 Pa is a widely applied deposition technique. For both, high power impulse magnetron sputtering (HiPIMS) as well as direct current magnetron sputtering (dcMS) the phenomenon of rotating ionization zones (also referred to as spokes) has been observed. A distinct spatial profile of the electric potential has been associated with the latter, giving rise to low, mid, and high energy groups of ions observed at the substrate. The adherent question of which mechanism drives this process is still not fully understood. This query is approached using Monte Carlo simulations of the heavy particle (i.e., ions and neutrals) transport consistently coupled to a pre-specified electron density profile via the intrinsic electric field. The coupling between the plasma generation and the electric potential, which establishes correspondingly, is investigated. While the system is observed to strive towards quasi-neutrality, distinct mechanisms governing the shape of the electric potential profile are identified. This work is supported by the German Research Foundation (DFG) in the frame of the transregional collaborative research centre TRR 87.

  15. Resonant Excitation of Boundary Layer Instability of DC Arc Plasma Jet by Current Modulation

    Czech Academy of Sciences Publication Activity Database

    Kopecký, Vladimír; Hrabovský, Milan

    2011-01-01

    Roč. 31, č. 6 (2011), s. 827-838 ISSN 0272-4324 R&D Projects: GA ČR GAP205/11/2070 Institutional research plan: CEZ:AV0Z20430508 Keywords : dc arc jet * plasma jet oscillations * boundary layer instability * frequency spectra Subject RIV: BL - Plasma and Gas Discharge Physics Impact factor: 1.602, year: 2011 http://www.springerlink.com/content/v160841757161758/

  16. A microcontroller based tuning mechanism for the magnetron

    International Nuclear Information System (INIS)

    Khan, A.M.; Mahfooz, M.; Hanumaiah, B.; Ganesh; Siddappa, K.

    2006-01-01

    In this paper we report on a control system developed to tune the magnetron frequency to get the maximum beam pulse in the microtron (electron accelerator facility at Mangalore University). The control system so designed consists of a microcontroller, a phase locked loop (PLL) and a digital to analog converter (DAC) to control the magnetron frequency. The voltage value given by the microcontroller through the DAC decides the reference frequency. The PLL gives the error voltage whenever there is difference between the reference and the magnetron frequencies. The microcontroller unit tracks the error voltage and tunes the magnetron with the help of a tuner mechanism connected through a stepper motor. The microcontroller also monitors the beam current level and accordingly adjusts the reference frequency to successfully tune the magnetron. (author)

  17. Fabrication and characterization of He-charged ODS-FeCrNi films deposited by a radio-frequency plasma magnetron sputtering technique

    Science.gov (United States)

    Song, Liang; Wang, Xianping; Wang, Le; Zhang, Ying; Liu, Wang; Jiang, Weibing; Zhang, Tao; Fang, Qianfeng; Liu, Changsong

    2017-04-01

    He-charged oxide dispersion strengthened (ODS) FeCrNi films were prepared by a radio-frequency (RF) plasma magnetron sputtering method in a He and Ar mixed atmosphere at 150 °C. As a comparison, He-charged FeCrNi films were also fabricated at the same conditions through direct current (DC) plasma magnetron sputtering. The doping of He atoms and Y2O3 in the FeCrNi films was realized by the high backscattered rate of He ions and Y2O3/FeCrNi composite target sputtering method, respectively. Inductive coupled plasma (ICP) and x-ray photoelectron spectroscopy (XPS) analysis confirmed the existence of Y2O3 in FeCrNi films, and Y2O3 content hardly changed with sputtering He/Ar ratio. Cross-sectional scanning electron microscopy (SEM) shows that the FeCrNi films were composed of dense columnar nanocrystallines and the thickness of the films was obviously dependent on He/Ar ratio. Nanoindentation measurements revealed that the FeCrNi films fabricated through DC/RF plasma magnetron sputtering methods exhibited similar hardness values at each He/Ar ratio, while the dispersion of Y2O3 apparently increased the hardness of the films. Elastic recoil detection (ERD) showed that DC/RF magnetron sputtered FeCrNi films contained similar He amounts (˜17 at.%). Compared with the minimal change of He level with depth in DC-sputtered films, the He amount decreases gradually in depth in the RF-sputtered films. The Y2O3-doped FeCrNi films were shown to exhibit much smaller amounts of He owing to the lower backscattering possibility of Y2O3 and the inhibition effect of nano-sized Y2O3 particles on the He element.

  18. Bifurcations in the theory of current transfer to cathodes of DC discharges and observations of transitions between different modes

    Science.gov (United States)

    Bieniek, M. S.; Santos, D. F. N.; Almeida, P. G. C.; Benilov, M. S.

    2018-04-01

    General scenarios of transitions between different spot patterns on electrodes of DC gas discharges and their relation to bifurcations of steady-state solutions are analyzed. In the case of cathodes of arc discharges, it is shown that any transition between different modes of current transfer is related to a bifurcation of steady-state solutions. In particular, transitions between diffuse and spot modes on axially symmetric cathodes, frequently observed in the experiment, represent an indication of the presence of pitchfork or fold bifurcations of steady-state solutions. Experimental observations of transitions on cathodes of DC glow microdischarges are analyzed and those potentially related to bifurcations of steady-state solutions are identified. The relevant bifurcations are investigated numerically and the computed patterns are found to conform to those observed in the course of the corresponding transitions in the experiment.

  19. Plug-and-Play Voltage/Current Stabilization DC Microgrid Clusters with Grid-Forming/Feeding Converters

    DEFF Research Database (Denmark)

    Han, Renke; Tucci, Michele; Martinelli, Andrea

    2018-01-01

    In this paper, we propose a new decentralized control scheme for Microgrid (MG) clusters, given by the interconnection of atomic dc MGs, each composed by grid-forming and grid-feeding converters. In particular, we develop a new Plug-and-Play (PnP) voltage/current controller for each MG in order...... to achieve simultaneous voltage support and current feeding function with local references. The coefficients of each stabilizing controller are characterized by explicit inequalities, which are related only to local electrical parameters of the MG. With the proposed controller, each MG can plug...

  20. Magnetron injection gun scaling

    International Nuclear Information System (INIS)

    Lawson, W.

    1988-01-01

    Existing analytic design equations for magnetron injection guns (MIG's) are approximated to obtain a set of scaling laws. The constraints are chosen to examine the maximum peak power capabilities of MIG's. The scaling laws are compared with exact solutions of the design equations and are supported by MIG simulations

  1. Active load current sharing in fuel cell and battery fed DC motor drive for electric vehicle application

    International Nuclear Information System (INIS)

    Pany, Premananda; Singh, R.K.; Tripathi, R.K.

    2016-01-01

    Highlights: • Load current sharing in FC and battery fed dc drive. • Active current sharing control using LabVIEW. • Detail hardware implementation. • Controller performance is verified through MATLAB simulation and experimental results. - Abstract: In order to reduce the stress on fuel cell based hybrid source fed electric drive system the controller design is made through active current sharing (ACS) technique. The effectiveness of the proposed ACS technique is tested on a dc drive system fed from fuel cell and battery energy sources which enables both load current sharing and source power management. High efficiency and reliability of the hybrid system can be achieved by proper energy conversion and management of power to meet the load demand in terms of required voltage and current. To overcome the slow dynamics feature of FC, a battery bank of adequate power capacity has to be incorporated as FC voltage drops heavily during fast load demand. The controller allows fuel cell to operate in normal load region and draw the excess power from battery. In order to demonstrate the performance of the drive using ACS control strategy different modes of operation of the hybrid source with the static and dynamic behavior of the control system is verified through simulation and experimental results. This control scheme is implemented digitally in LabVIEW with PCI 6251 DAQ I/O interface card. The efficacy of the controller performance is demonstrated in system changing condition supplemented by experimental validation.

  2. Self-commutated high-voltage direct current transmission with DC circuit breakers. Backbone for the energy policy turnaround; Selbstgefuehrte Hochspannungs-Gleichstromuebertragung mit DC-Leistungsschalter. Rueckgrat fuer die Energiewende

    Energy Technology Data Exchange (ETDEWEB)

    Goerner, Raphael [ABB AG, Mannheim (Germany). Marketing und Vertrieb, Geschaeftsbereich Grid Systems

    2013-06-01

    The 'current war' between direct current and alternating current is extended by a new location. In the future, both technologies work together in order to provide a reliable power transmission in Germany and long-term in Europe. This is based on the self-guided high-voltage direct current transmission. In conjunction with direct current circuit breakers (DC circuit breaker) the power circuit breakers may help to make the transmission grids more flexible and to minimize losses.

  3. High frequency pulse anodising of magnetron sputtered Al–Zr and Al–Ti Coatings

    DEFF Research Database (Denmark)

    Gudla, Visweswara Chakravarthy; Bordo, Kirill; Engberg, Sara

    2016-01-01

    High frequency pulse anodising of Al–Zr and Al–Ti coatings is studied as a surface finishing technique and compared to conventional decorative DC anodising. The Al–Zr and Al–Ti coatings were deposited using DC magnetron sputtering and were heat treated after deposition to generate a multiphase mi...

  4. Influence of addition of indium and of post-annealing on structural, electrical and optical properties of gallium-doped zinc oxide thin films deposited by direct-current magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Pham, Duy Phong [Laboratory of Advanced Materials, University of Science, Vietnam National University, HoChiMinh (Viet Nam); College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Nguyen, Huu Truong [Laboratory of Advanced Materials, University of Science, Vietnam National University, HoChiMinh (Viet Nam); Phan, Bach Thang [Laboratory of Advanced Materials, University of Science, Vietnam National University, HoChiMinh (Viet Nam); Faculty of Materials Science, University of Science, Vietnam National University, HoChiMinh (Viet Nam); Hoang, Van Dung [Laboratory of Advanced Materials, University of Science, Vietnam National University, HoChiMinh (Viet Nam); Maenosono, Shinya [School of Materials Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292 (Japan); Tran, Cao Vinh, E-mail: tcvinh@hcmus.edu.vn [Laboratory of Advanced Materials, University of Science, Vietnam National University, HoChiMinh (Viet Nam)

    2015-05-29

    In this study, both gallium-doped zinc oxide (GZO) and indium-added gallium-doped zinc oxide (IGZO) thin films were deposited on commercial glasses by magnetron dc-sputtering in argon atmosphere. The crystal structure, electrical conductivity and optical transmission of as-deposited as well as post-annealed thin films of both GZO and IGZO were investigated for comparison. A small amount of indium introduced into GZO thin films had improved their polycrystalline structure and increased their electrical conductivity by over 29%. All obtained GZO and IGZO thin films have strong [002] crystalline direction, a characteristic orientation of ZnO thin films. Although post-annealed in air at high temperatures up to 500 °C, IGZO thin films still had very low sheet resistance of 6.6 Ω/□. Furthermore, they had very high optical transmission of over 80% in both visible and near-infrared regions. - Highlights: • Doping 0.1 at.% indium enhanced crystalline, electrical properties of GZO films. • The mobility of IGZO films was 25% higher than that of GZO films. • The IGZO films will be potential materials for transparent conducting electrodes.

  5. Influence of addition of indium and of post-annealing on structural, electrical and optical properties of gallium-doped zinc oxide thin films deposited by direct-current magnetron sputtering

    International Nuclear Information System (INIS)

    Pham, Duy Phong; Nguyen, Huu Truong; Phan, Bach Thang; Hoang, Van Dung; Maenosono, Shinya; Tran, Cao Vinh

    2015-01-01

    In this study, both gallium-doped zinc oxide (GZO) and indium-added gallium-doped zinc oxide (IGZO) thin films were deposited on commercial glasses by magnetron dc-sputtering in argon atmosphere. The crystal structure, electrical conductivity and optical transmission of as-deposited as well as post-annealed thin films of both GZO and IGZO were investigated for comparison. A small amount of indium introduced into GZO thin films had improved their polycrystalline structure and increased their electrical conductivity by over 29%. All obtained GZO and IGZO thin films have strong [002] crystalline direction, a characteristic orientation of ZnO thin films. Although post-annealed in air at high temperatures up to 500 °C, IGZO thin films still had very low sheet resistance of 6.6 Ω/□. Furthermore, they had very high optical transmission of over 80% in both visible and near-infrared regions. - Highlights: • Doping 0.1 at.% indium enhanced crystalline, electrical properties of GZO films. • The mobility of IGZO films was 25% higher than that of GZO films. • The IGZO films will be potential materials for transparent conducting electrodes

  6. A novel wavelet-based feature extraction from common mode currents for fault location in a residential DC microgrid

    DEFF Research Database (Denmark)

    Beheshtaein, Siavash; Yu, Junyang; Cuzner, Rob

    2017-01-01

    approaches have been developed that enable construction of scalable microgrids based on PV and battery storage. However, as these systems proliferate, it will be necessary to develop safe and reliable methods for fault protection. Ground faults are of specific concern because, in many cases, cables...... are buried underground. At the same time, microgrids include current monitoring and processing capability wherever an energy resource interfaces to the microgrid through a power electronic converter. This paper discusses methods for identifying ground fault behavior within standard DC microgrid structures...

  7. Direct current (DC) resistivity and Induced Polarization (IP) monitoring of active layer dynamics at high temporal resolution

    DEFF Research Database (Denmark)

    Doetsch, J.; Fiandaca, G.; Ingeman-Nielsen, Thomas

    2015-01-01

    With permafrost thawing and changes in active layer dynamics induced by climate change, interactions between biogeochemical and thermal processes in the ground are of great importance. Here, active layer dynamics have been monitored using direct current (DC) resistivity and induced polarization (IP...... the soil freezing as a strong increase in resistivity. While the freezing horizon generally moves deeper with time, some variations in the freezing depth are observed along the profile. Comparison with depth-specific soil temperature indicates an exponential relationship between resistivity and below...

  8. Direct current (DC) resistivity and induced polarization (IP) monitoring of active layer dynamics at high temporal resolution

    DEFF Research Database (Denmark)

    Doetsch, Joseph; Ingeman-Nielsen, Thomas; Christiansen, Anders V.

    2015-01-01

    With permafrost thawing and changes in active layer dynamics induced by climate change, interactions between biogeochemical and thermal processes in the ground are of great importance. Here, active layer dynamics have been monitored using direct current (DC) resistivity and induced polarization (IP...... in resistivity. While the freezing horizon generally moves deeper with time, some variations in the freezing depth are observed along the profile. Comparison with depth-specific soil temperature indicates an exponential relationship between resistivity and below-freezing temperature. Time-lapse inversions...

  9. Investigation into the Control Methods to Reduce the DC-Link Capacitor Ripple Current in a Back-to-Back Converter

    DEFF Research Database (Denmark)

    Qin, Zian; Wang, Huai; Blaabjerg, Frede

    2014-01-01

    Three-phase back-to-back converters have a wide range of applications (e.g. wind turbines) in which the reliability and cost-effectiveness are of great concern. Among other components and interconnections, DC-link capacitors are one of the weak links influenced by environmental stresses (e.......g. ambient temperature, humidity, etc.) and operating stresses (e.g. voltage, ripple current). This paper serves to investigate the ways of reducing ripple current stresses of DC-link capacitors in back-toback converters. The outcome could benefit to achieve either an extended lifetime for a designed DC...

  10. V-I curves and plasma parameters in a high density DC glow discharge generated by a current-source

    International Nuclear Information System (INIS)

    Granda-Gutierrez, E E; Lopez-Callejas, R; Piedad-Beneitez, A de la; BenItez-Read, J S; Pacheco-Sotelo, J O; Pena-Eguiluz, R; A, R Valencia; Mercado-Cabrera, A; Barocio, S R

    2008-01-01

    Nitrogen DC glow discharges, conducted in a cylindrical geometry, have been characterized using a new current-source able to provide 10 -3 - 3 A for the sustainment of the discharge, instead of a conventional voltage-source. The V-I characteristic curves obtained from these discharges were found to fit the general form i(v) = A(p)v k(p) , whereby the plasma itself can be modeled as a voltage-controlled current-source. We conclude that the fitting parameters A and k, which mainly depend on the gas pressure p, are strongly related to the plasma characteristics, so much so that they can indicate the pressure interval in which the maximum plasma density is located, with values in the order of 10 16 m -3 at reduced discharge potential (300-600 V) and low working pressure (10 -1 - 10 1 Pa)

  11. DC Home Appliances for DC Distribution System

    Directory of Open Access Journals (Sweden)

    MUHAMMAD KAMRAN

    2017-10-01

    Full Text Available This paper strengthens the idea of DC distribution system for DC microgrid consisting of a building of 50 apartments. Since the war of currents AC system has been dominant because of the paucity of research in the protection of the DC system. Now with the advance research in power electronics material and components, generation of electricity is inherently DC as by solar PV, fuel cell and thermoelectric generator that eliminates the rectification process. Transformers are replaced by the power electronics buck-boost converters. DC circuit breakers have solved the protection problems for both DC transmission and distribution system. In this paper 308V DC microgrid is proposed and home appliances (DC internal are modified to operate on 48V DC from DC distribution line. Instead of using universal and induction motors in rotary appliances, BLDC (Brushless DC motors are proposed that are highly efficient with minimum electro-mechanical and no commutation losses. Proposed DC system reduces the power conversion stages, hence diminishes the associated power losses and standby losses that boost the overall system efficiency. So in view of all this a conventional AC system can be replaced by a DC system that has many advantages by cost as well as by performance

  12. Assessment of the excitation temperatures and Mg II:I line ratios of the direct current (DC) arc source for the analysis of radioactive materials

    International Nuclear Information System (INIS)

    Manard, B.T.; Matonic, John; Montoya, Dennis; Jump, Robert; Castro, Alonso; Ning Xu

    2017-01-01

    The direct current (DC) arc plasma has been assessed with an emphasis on excitation temperature (T_e_x_e) and ionization/excitation efficiency by monitoring magnesium ionic:atomic ratios (Mg II:I). The primary goal is to improve the analytical performance of the DC arc instrumentation such that more sensitive and reproducible measurements can be achieved when analyzing trace impurities in nuclear materials. Due to the variety of sample types requiring DC arc analysis, an understanding of the plasma's characteristics will significantly benefit the experimental design when moving forward with LANL's capabilities for trace metal analysis of plutonium metals. (author)

  13. Recent progress in thin film processing by magnetron sputtering with plasma diagnostics

    International Nuclear Information System (INIS)

    Han, Jeon G

    2009-01-01

    The precise control of the structure and related properties becomes crucial for sophisticated applications of thin films deposited by magnetron sputtering in emerging industries including the flat panel display, digital electronics and nano- and bio-industries. The film structure is closely related to the total energy delivered to the substrate surface for nucleation and growth during all kinds of thin film processes, including magnetron sputtering. Therefore, the energy delivered to the surface for nucleation and growth during magnetron sputtering should be measured and analysed by integrated diagnostics of the plasma parameters which are closely associated with the process parameters and other external process conditions. This paper reviews the background of thin film nucleation and growth, the status of magnetron sputtering technology and the progress of plasma diagnostics for plasma processing. The evolution of the microstructure during magnetron sputtering is then discussed with respect to the change in the process variables in terms of the plasma parameters along with empirical data of the integrated plasma diagnostics for various magnetron sputtering conditions with conventional dc, pulsed dc and high power pulsed dc sputtering modes. Among the major energy terms to be discussed are the temperature change in the top surface region and the energies of ions and neutral species. (topical review)

  14. 4-13 kA DC current transducers enabling accurate in-situ calibration for a new particle accelerator project, LHC

    CERN Document Server

    Hudson, G

    2005-01-01

    CERN's next generation particle accelerator, the large hadron collider (LHC) requires accurate current measurement up to 13 kA to enable current tracking between individual power converters. DC current transducers (DCCTs) have been developed to allow in-situ calibrations to 10/sup -6/ uncertainty. This paper describes the principle, design and initial evaluations.

  15. Corrosion of thin, magnetron sputtered Nb_2O_5 films

    International Nuclear Information System (INIS)

    Pillis, Marina Fuser; Geribola, Guilherme Altomari; Scheidt, Guilherme; Gonçalves de Araújo, Edval; Lopes de Oliveira, Mara Cristina; Antunes, Renato Altobelli

    2016-01-01

    Highlights: • Niobium oxide based films were obtained by DC magnetron sputtering. • Different deposition times were tested. • The best corrosion resistance was obtained for the Nb_2O_5 film produced at 15′. • Film porosity determines the corrosion resistance. - Abstract: Niobium oxide based thin films were deposited on AISI 316 stainless steel substrates using reactive DC magnetron sputtering. Structure, composition and corrosion resistance of the niobium oxide films were studied. The corrosion behavior of the specimens was evaluated by electrochemical impedance spectroscopy (EIS) and potentiodynamic polarization. The concentration of niobium and oxygen in the films was obtained by Rutherford backscattering spectroscopy (RBS). The film structure was analyzed by X-ray diffractometry. The corrosion resistance of the substrate was improved by the Nb_2O_5 layers. The best protective performance was achieved for the deposition time of 15 min.

  16. Direct Current as an Integrating Platform for ZNE Buildings with EVs and Storage: DC Direct Systems – A Bridge to a Low Carbon Future?

    Energy Technology Data Exchange (ETDEWEB)

    Johnson, Karl [California Inst. for Energy and the Environment, Berkeley, CA (United States); Vossos, Vagelis [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Kloss, Margarita [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Robinson, Gerald [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Brown, Rich [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

    2016-09-01

    Cost effective zero net energy (ZNE) schemes exist for many types of residential and commercial buildings. Yet, today’s alternating current (AC) based ZNE designs may be as much as 10% to 20% less efficient, more costly, and more complicated than a design based on direct current (DC) technologies. An increasing number of research organizations and manufacturers are just starting the process of developing products and conducting research and development (R&D) efforts. These early R&D efforts indicate that the use of DC technologies may deliver many energy and non-energy benefits relative to AC-based typologies. DC ZNE schemes may provide for an ideal integrating platform for natively DC-based onsite generation, storage, electric vehicle (EV) charging and end-use loads. Emerging empirical data suggest that DC end-use appliances are more efficient, simpler, more durable, and lower cost. DC technologies appear to provide ratepayers a lower cost pathway to achieve resilient ZNE buildings, and simultaneously yield a plethora of benefits. This paper draws from the current research effort entitled "Direct Current as an Integrating and Enabling Platform," co-led by the Lawrence Berkeley National Laboratory (LBNL), the California Institute for Energy and the Environment (CIEE), the Electric Power Research Institute (EPRI) and funded under the California Energy Commission’s Energy Program Investment Charge (CEC EPIC). The first phase of this EPIC research is focused on assembling and summarizing known global performance information on DC and DC-AC hybrid end-use appliances and power systems. This paper summarizes the information and insights gained from this research effort.

  17. Neutral-point current modeling and control for Neutral-Point Clamped three-level converter drive with small DC-link capacitors

    DEFF Research Database (Denmark)

    Maheshwari, Ram Krishan; Munk-Nielsen, Stig; Busquets-Monge, Sergio

    2011-01-01

    A Neutral-Point-Clamped (NPC) three-level inverter with small DC-link capacitors is presented in this paper. This inverter requires zero average neutral-point current for stable neutral-point potential. A simple carrier based modulation strategy is proposed for achieving zero average neutral...... drive with only 14 μF DC-link capacitors. A fast and stable performance of the neutral-point voltage controller is achieved and verified by experiments....

  18. The design of a linear amplifier for very small DC-currents, called LASC

    International Nuclear Information System (INIS)

    Stroem, S.; Storruste, A.

    1989-12-01

    A linear amplifier for the monitoring of very small currents from a high pressure ionization chamber has been designed. In the traditional design of an ionization chamber current amplifier, selected semiconductors and resistors are chosen to measure the very small currents in question. As the leakage currents in these semiconductors are larger than the smallest currents to be measured, very sophisticated electronics must be employed to succeed with the design. In order to overcome this disadvantage, the reported design is based on the following basic features: A capacitor is charged by the chamber ion current during a fixed time period, without loading the amplifier input. The use of a peak detector makes bouncing of the time-lag relay contacts unimportant, and allows an analog-to-digital converter to store the voltage build-up in the capacitor as a digital value. The measuring range of the amplifier, 0.001 pA to 1000 pA, makes it suitable for measuring gamma radiation in the air, both under normal and abnormal conditions. The design of the amplifier is described and results from tests are presented. 6 refs.; 6 figs.; 3 tabs

  19. Performance Improvement for Two-Stage Single-Phase Grid-Connected Converters Using a Fast DC Bus Control Scheme and a Novel Synchronous Frame Current Controller

    Directory of Open Access Journals (Sweden)

    Bingzhang Li

    2017-03-01

    Full Text Available Two-stage single-phase grid-connected converters are widely used in renewable energy applications. Due to the presence of a second harmonic ripple across the DC bus voltage, it is very challenging to design the DC bus voltage control scheme in single-phase grid-connected inverters. The DC bus voltage controller must filter the ripple and balance a tradeoff between low harmonic distortion and high bandwidth. This paper presents a fast DC bus voltage controller, which uses a second order digital finite impulse response (FIR notch filter in conjunction with input power feedforward scheme to ensure the steady-state and dynamic performance. To gain the input power without extra hardware, a Kalman filter is incorporated to estimate the DC bus input current. At the same time, a modulation compensation strategy is implemented to eliminate the nonlinearity of the grid current control loop, which is caused by the DC bus voltage ripple. Moreover, a novel synchronous frame current controller for single-phase systems is also introduced, and its equivalent model in stationary frame has been derived. Simulation and experimental results are provided to verify the effective of the proposed control scheme.

  20. Impurity Deionization Effects on Surface Recombination DC Current-Voltage Characteristics in MOS Transistors

    International Nuclear Information System (INIS)

    Chen Zuhui; Jie Binbin; Sah Chihtang

    2010-01-01

    Impurity deionization on the direct-current current-voltage characteristics from electron-hole recombination (R-DCIV) at SiO 2 /Si interface traps in MOS transistors is analyzed using the steady-state Shockley-Read-Hall recombination kinetics and the Fermi distributions for electrons and holes. Insignificant distortion is observed over 90% of the bell-shaped R-DCIV curves centered at their peaks when impurity deionization is excluded in the theory. This is due to negligible impurity deionization because of the much lower electron and hole concentrations at the interface than the impurity concentration in the 90% range. (invited papers)

  1. Near DC eddy current measurement of aluminum multilayers using MR sensors and commodity low-cost computer technology

    Science.gov (United States)

    Perry, Alexander R.

    2002-06-01

    Low Frequency Eddy Current (EC) probes are capable of measurement from 5 MHz down to DC through the use of Magnetoresistive (MR) sensors. Choosing components with appropriate electrical specifications allows them to be matched to the power and impedance characteristics of standard computer connectors. This permits direct attachment of the probe to inexpensive computers, thereby eliminating external power supplies, amplifiers and modulators that have heretofore precluded very low system purchase prices. Such price reduction is key to increased market penetration in General Aviation maintenance and consequent reduction in recurring costs. This paper examines our computer software CANDETECT, which implements this approach and permits effective probe operation. Results are presented to show the intrinsic sensitivity of the software and demonstrate its practical performance when seeking cracks in the underside of a thick aluminum multilayer structure. The majority of the General Aviation light aircraft fleet uses rivets and screws to attach sheet aluminum skin to the airframe, resulting in similar multilayer lap joints.

  2. Upgrade Fe-50%Ni alloys for open-loop DC current sensor: Design and alloy-potential characteristics

    International Nuclear Information System (INIS)

    Waeckerle, Thierry; Fraisse, Herve; Furnemont, Quentin; Bloch, Frederic

    2006-01-01

    This paper deals with the DC current sensor with open loop and high accuracy, and describes the relationship between the latter and the core-material magnetic properties in the case of Fe-50%Ni alloys. It is pointed out that air-gap precision, nonlinearity B-H and hysteresis are the main sources of accuracy; the influences of mechanical stress and temperature on coercive field are quantified and have to be taken into account in the design of the sensor. It is shown by dedicated choice of grades and annealing that Fe-50%Ni alloys may vary their coercive field from 4-6 A/m down to 1.5-4 A/m depending on the final annealing treatment used

  3. Improvement of a high current DC power supply system for testing the large scaled superconducting cables and magnets

    International Nuclear Information System (INIS)

    Yamada, Shuichi; Chikaraishi, Hirotaka; Tanahashi, Shugo

    1993-11-01

    A dc 75 kA power supply system was constructed to test the superconducting (SC) R and D cables and magnets for the Large Helical Device. It consists of three 25 kA unit banks. A unit bank has two double-star-rectifier connections with the inter-phase reactors. A digital feedback control method is applied to the automatic current regulation (ACR) in each unit bank. For shortening the dead time of the feedback process, a new algorithm of a digital phase controller for the ACR is investigated. A Bode diagram of the feedback process is directly measured. It is confirmed that the dead time of the feedback process is reduced to one sixth, and that the feedback gain of PID compensation is improved by a factor of two from the original method. (author)

  4. Regulated-current dc power supply for gaseous-discharge lamps

    Science.gov (United States)

    Freeman, W.; Huguenin, D.

    1970-01-01

    Controlled current source having a high output resistance feeds continuous-flow hydrogen lamps in vacuum-ultraviolet photometric equipment. The power supply, also used with low-pressure sealed lamps, has a short recovery time and smooth regulation without overshoot.

  5. Influence of DC arc current on the formation of cobalt-based ...

    Indian Academy of Sciences (India)

    P B ORPE

    2017-07-06

    Jul 6, 2017 ... magnetic properties as compared to other arc currents. Keywords. Nanostructures ... ferent sizes and shapes of high purity and crystallinity by controlling ... Pramana – J. Phys. (2017) 89:20. Page 3 of 6 20. (a). (b). (c). Element ...

  6. Electrooptic Methods for Measurement of Small DC Currents at High Voltage Level

    DEFF Research Database (Denmark)

    Tønnesen, Ole; Beatty, Neville; Skilbreid, Asbjørn Ottar

    1989-01-01

    collectors are connected via resistors RA and RB to the protective side of the voltage to be measured and the emitters to the negative side. The currents flowing in to the bases of the transistors are independently controlled by the light levels following on the two photodiodes PDA, PDB....

  7. Room temperature deposition of high figure of merit Al-doped zinc oxide by pulsed-direct current magnetron sputtering: Influence of energetic negative ion bombardment on film's optoelectronic properties

    Energy Technology Data Exchange (ETDEWEB)

    Fumagalli, F., E-mail: francesco.fumagalli@iit.it; Martí-Rujas, J., E-mail: javier.rujas@iit.it; Di Fonzo, F., E-mail: fabio.difonzo@iit.it

    2014-10-31

    Aluminum-doped zinc oxide is regarded as a promising indium-free transparent conductive oxide for photovoltaic and transparent electronics. In this study high transmittance (up to 90,6%) and low resistivity (down to 8,4°1{sup −4} Ω cm) AZO films were fabricated at room temperature on thermoplastic and soda-lime glass substrates by means of pulsed-DC magnetron sputtering in argon gas. Morphological, optical and electrical film properties were characterized using scanning electron microscopy, UV–vis–nIR photo-spectrometer, X-ray spectroscopy and four probes method. Optimal deposition conditions were found to be strongly related to substrate position. The dependence of functional properties on substrate off-axis position was investigated and correlated to the angular distributions of negative ions fluxes emerging from the plasma discharge. Figure of merit as high as 2,15 ± 0,14 Ω{sup −1} were obtained outside the negative oxygen ions confinement region. Combination of high quality AZO films deposited on flexible polymers substrates by means of a solid and scalable fabrication technique is of interest for application in cost-effective optoelectrical devices, organic photovoltaics and polymer based electronics. - Highlights: • High figure of merit transparent conductive oxide's deposited at room temperature. • High transmittance and low resistivity obtained on thermoplastic substrates. • Competitive optoelectrical properties compared to high temperature deposition. • Negative ion fluxes confinement influence structural and optoelectrical properties. • Easily adaptable for scaled-up low temperature AZO film deposition installations.

  8. DC resistance comparison between a current comparator bridge and the quantum Hall system at Inmetro

    International Nuclear Information System (INIS)

    Da Silva, M C; Vasconcellos, R T B; Carvalho, H R

    2016-01-01

    This paper presents a comparison results between the Quantum Hall System (QHS) under development at the Quantum Electrical Metrology Laboratory (Lameq) and the current comparator calibration system, traceable to the Bureau International des Poids et Mesures (BIPM), at the Electrical Standardization Metrology Laboratory (Lampe), both part of the Electrical Metrology Division, at Inmetro. Comparisons were performed with 1 Ω, 10 Ω, 100 Ω, 1 kΩ and 10 kΩ resistors. The results obtained over two years of work are presented here, showing that the comparison contributed to improve the calibration systems of both Lampe and Lameq. (paper)

  9. Development of a contactless DC current sensor with high linearity and sensitivity based on the magnetoelectric effect

    Science.gov (United States)

    Castro, N.; Reis, S.; Silva, M. P.; Correia, V.; Lanceros-Mendez, S.; Martins, P.

    2018-06-01

    The magnetoelectric (ME) effect is increasingly being considered an attractive alternative for magnetic field and smart current sensing, being able to sense static and dynamic magnetic fields. This work reports on a contactless DC current sensor device based on a ME PVDF/Metglas composite, a solenoid and the corresponding electronic instrumentation. The ME sample shows a maximum resonant ME coefficient (α 33) of 34.48 V cm‑1 Oe‑1, a linear response (R 2 = 0.998) and a sensitivity of 6.7 mV A‑1. With the incorporation of a charge amplifier, an AC-RMS converter and a microcontroller the linearity is maintained (R 2 = 0.997), the ME output voltage increases to a maximum of 2320 mV and the sensitivity rises to 476.5 mV A‑1. Such features allied to the highest sensitivity reported in the literature on polymer-based ME composites provide to the reported ME sensing device suitable characteristics to be used in non-contact electric current measurement, motor operational status checking, and condition monitoring of rechargeable batteries, among others.

  10. Inverted relativistic magnetron with a single axial output

    International Nuclear Information System (INIS)

    Ballard, W.P.; Earley, L.M.; Wharton, C.B.

    1986-01-01

    A twelve vane, 1 MV, S-band magnetron has been designed and tested. An inverted design was selected to minimize the parasitic axial electron losses. The stainless steel anode is approximately one wavelength long. One end is partially short-circuited to rf, while the other end has a mode transformer to couple the 3.16 GHz π-mode out into a TM 01 circular waveguide. The magnetron has a loaded output Q of about 100. Operation at 1 MV, 0.31 T, 5 kA routinely produces approx.150 MW peak rms and 100 MW average rms with pulse lengths adjustable from 5 to 70 ns. The microwave power pulse has a rise time of approx.2 ns. The output power is diagnosed using four methods: calorimetry, two circular-waveguide directional couplers installed on the magnetron, two transmitting-receiving systems, and gaseous breakdown. Operation at other voltages and magnetic fields shows that the oscillation frequency is somewhat dependent on the magnetron current. Frequency changes of approx.20 MHz/kA occur as the operating conditions are varied. A series of experiments varying the anode conductivity, the electron emission profile, and the output coupling transformer design showed that none of these significantly increased the output power. Therefore, we have concluded that this magnetron operates in saturation. Because of the anode lifetime and repeatability, this magnetron has the potential to be repetitively pulsed. 36 refs., 16 figs

  11. Design, Assembly, and Commissioning of a Cryogenic DC Current Transformer Designed for Measuring Currents of up to 80 kA

    CERN Document Server

    Montenero, G; Bottura, L; Arpaia, P

    2015-01-01

    A new cryogenic dc current transformer (Cryo-DCCT) has recently been designed and assembled at CERN. The device, whose design is based on that of a high-accuracy 600 A market solution suitable for room temperature applications, is optimized for measuring currents of up to 80 kA and for operation at 4.2 K. The CryoDCCT has been conceived with the objective of preserving the metrological performance of the original commercial device in the new extended range of operation. For reducing the effect of interfering magnetic fields arising from test conditions, it incorporates ferromagnetic and MgB2 superconducting shields. In this paper, the design of the CryoDCCT and the results of the commissioning of the device at CERN are reported. The effectiveness of the current transducer is analysed and discussed. This new device will be used for measuring the secondary current of a 80 kA superconducting transformer feeding a sample of NbSn3 cable at the Facility for Research on Superconducting Cables (FRESCA) at CERN.

  12. Hysteresis losses in MgB{sub 2} superconductors exposed to combinations of low AC and high DC magnetic fields and transport currents

    Energy Technology Data Exchange (ETDEWEB)

    Magnusson, N., E-mail: niklas.magnusson@sintef.no [SINTEF Energy Research, NO-7465 Trondheim (Norway); Abrahamsen, A.B. [DTU Wind Energy, Technical University of Denmark, DK-4000 Roskilde (Denmark); Liu, D. [Electrical Power Processing Group, TU Delft, Mekelweg 4, NL-2628 CD Delft (Netherlands); Runde, M. [SINTEF Energy Research, NO-7465 Trondheim (Norway); Polinder, H. [Electrical Power Processing Group, TU Delft, Mekelweg 4, NL-2628 CD Delft (Netherlands)

    2014-11-15

    Highlights: • A method for calculating hysteresis losses in the low AC – high DC magnetic field and transport current range has been shown. • The method can be used in the design of wind turbine generators for calculating the losses in the generator DC rotor. • First estimates indicate tolerable current ripple in the 0.1% range for a 4 T DC MgB{sub 2} generator rotor coil. - Abstract: MgB{sub 2} superconductors are considered for generator field coils for direct drive wind turbine generators. In such coils, the losses generated by AC magnetic fields may generate excessive local heating and add to the thermal load, which must be removed by the cooling system. These losses must be evaluated in the design of the generator to ensure a sufficient overall efficiency. A major loss component is the hysteresis losses in the superconductor itself. In the high DC – low AC current and magnetic field region experimental results still lack for MgB{sub 2} conductors. In this article we reason towards a simplified theoretical treatment of the hysteresis losses based on available models in the literature with the aim of setting the basis for estimation of the allowable magnetic fields and current ripples in superconducting generator coils intended for large wind turbine direct drive generators. The resulting equations use the DC in-field critical current, the geometry of the superconductor and the magnitude of the AC magnetic field component as parameters. This simplified approach can be valuable in the design of MgB{sub 2} DC coils in the 1–4 T range with low AC magnetic field and current ripples.

  13. High critical current density YBCO films and fabrication of dc-SQUIDs

    CERN Document Server

    Kuriki, S; Kawaguchi, Y; Matsuda, M; Otowa, T

    2002-01-01

    In order to improve the sensitivity of SQUID magnetometers made of high-T sub c films, we have studied the conditions of pulsed-laser deposition of YBCO films. Among the different deposition parameters examined, extensive degassing of the vacuum chamber before and precise control of the substrate temperature during the film deposition were found effective for obtaining high critical temperature T sub c and high critical current density J sub c. It was also found that the residual-resistance ratio has a clear correlation with J sub c , indicating that it can be a good, and easy to measure, index of the film quality. Films having T sub c approx 89-90 K and J sub c >= 5x10 sup 6 A cm sup - sup 2 at 77 K were used to fabricate SQUIDs without a pickup loop. Grain-boundary junctions formed on bicrystal substrates with a 30 deg. misorientation angle exhibited I sub c R sub n values of more than 100 mu V at 77 K. The well-known scaling behaviour of the relation I sub c R sub n propor to (J sup G sup B sub c) sup 1 su...

  14. AUTOMATED MEASURING COMPLEX FOR ACCEPTANCE TESTING OF DC AND UNDULATED-CURRENT TRACTION MOTORS

    Directory of Open Access Journals (Sweden)

    A. Yu. Drubetskyi

    2016-12-01

    transducers for the measurement of currents and voltages. Thanks to chassis compact size, it was united in one body with the power supply for sensors. Thus, it was possible to reduce the size of the entire complex, simplify and speed up its preparations for the measurements.

  15. Surface functionalization of nanostructured LaB{sub 6}-coated Poly Trilobal fabric by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Yan, E-mail: wuyanchn@hotmail.com [Mechanical and Electrical Engineering Branch, Jiaxing Nanyang Polytechnic Institute, Jiaxing 314003 (China); Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials (Ministry of Education), Shandong University, Jinan 250061 (China); Zhang, Lin, E-mail: zhanglin2007@sdu.edu.cn [Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials (Ministry of Education), Shandong University, Jinan 250061 (China); Min, Guanghui, E-mail: ghmin@sdu.edu.cn [Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials (Ministry of Education), Shandong University, Jinan 250061 (China); Yu, Huashun; Gao, Binghuan; Liu, Huihui; Xing, Shilong; Pang, Tao [Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials (Ministry of Education), Shandong University, Jinan 250061 (China)

    2016-10-30

    Highlights: • Nanostructured LaB{sub 6} films were deposited on flexible textile substrates by dc magnetron sputtering. • The pronounced influence of the working pressure on the morphologies and optical properties of LaB{sub 6} films has been revealed. • The concept of Ultraviolet Protection Factor (UPF) was employed and LaB{sub 6}-coated PET textiles with ultraviolet protection ability were obtained. - Abstract: Nanostructured LaB{sub 6} films were deposited on flexible Poly Trilobal substrates (PET textiles) through direct current magnetron sputtering in order to broaden its applications and realize surface functionalization of polyester fabrics. Characterizations and performances were investigated by employing a scanning electron microscope (SEM), Fourier transformation infrared spectroscopy (FT-IR) and ultraviolet-visible (UV–vis) spectrophotometer. Ultraviolet Protection Factor (UPF) conducted by the integral conversion was employed to measure the ultraviolet protection ability. As expected, the growth of LaB{sub 6} film depending on the pressure variation enhanced UV-blocking ability (UPF rating at 30.17) and absorption intensity of the textiles.

  16. Three new DC-to-DC Single-Switch Converters

    Directory of Open Access Journals (Sweden)

    Barry W. Williams

    2017-06-01

    Full Text Available This paper presents a new family of three previously unidentified dc-to-dc converters, buck, boost, and buck-boost voltage-transfer-function topologies, which offer advantageous transformer coupling features and low capacitor dc voltage stressing. The three single-switch, single-diode, converters offer the same features as basic dc-to-dc converters, such as the buck function with continuous output current and the boost function with continuous input current. Converter time-domain simulations and experimental results (including transformer coupling support and extol the dc-to-dc converter concepts and analysis presented.

  17. Elimination of DC-Link Current Ripple for Modular Multilevel Converters With Capacitor Voltage-Balancing Pulse-Shifted Carrier PWM

    DEFF Research Database (Denmark)

    Deng, Fujin; Chen, Zhe

    2015-01-01

    The modular multilevel converter (MMC) is attractive for medium- and high-power applications because of its high modularity, availability, and power quality. In this paper, the current ripple on the dc link of the three-phase MMC derived from the phase-shifted carrier-based pulse-width modulation...

  18. Harmonic Distortion Performance of Multi Three-Phase SCR-Fed Drive Systems with Controlled DC-Link Current under Unbalanced Grid

    DEFF Research Database (Denmark)

    Soltani, Hamid; Davari, Pooya; Blaabjerg, Frede

    2017-01-01

    . In this paper, the main aim is to analyze the effects of the grid unbalanced voltage on the multi-unit three-phase ASDs with the Silicon-Controlled Rectifier (SCR)-fed front-end rectifiers, where the DC-link current is controlled utilizing an Electronic Inductor (EI) technique. In this respect, the main...

  19. Reactive magnetron sputtering model at making Ti-TiOx coatings

    International Nuclear Information System (INIS)

    Luchkin, A G; Kashapov, N F

    2014-01-01

    Mathematical model of reactive magnetron sputtering for plant VU 700-D is described. Approximating curves for experimental current-voltage characteristic for two gas input schemas are shown. Choice of gas input schema influences on model parameters (mainly on pumping speed). Reactive magnetron sputtering model allows develop technology of Ti - TiO x coatings deposition without changing atmosphere and pressure in vacuum chamber

  20. Containment-based Distributed Coordination Control to Achieve Both Bounded Voltage and Precise Current Sharing in Reverse-Droop-based DC Microgrid

    DEFF Research Database (Denmark)

    Han, Renke; Wang, Haojie; Jin, Zheming

    2017-01-01

    A highly flexible and reliable control strategy is proposed to achieve bounded voltage and precise current sharing, which is implemented in a reverse-droop-based dc Micro-Grid. To acquire the fast-dynamic response, the reverse droop control is used to replace the V-I droop control in the primary...... sharing among converters. Combined the proposed controllers with the electrical part of the dc Micro-Grid, a model is fully developed to analyze the sensitivity of different control coefficients. Experimental results are presented to demonstrate the effectiveness of the proposed method....

  1. Specific Intensity Direct Current (DC) Electric Field Improves Neural Stem Cell Migration and Enhances Differentiation towards βIII-Tubulin+ Neurons

    Science.gov (United States)

    Zhao, Huiping; Steiger, Amanda; Nohner, Mitch; Ye, Hui

    2015-01-01

    Control of stem cell migration and differentiation is vital for efficient stem cell therapy. Literature reporting electric field–guided migration and differentiation is emerging. However, it is unknown if a field that causes cell migration is also capable of guiding cell differentiation—and the mechanisms for these processes remain unclear. Here, we report that a 115 V/m direct current (DC) electric field can induce directional migration of neural precursor cells (NPCs). Whole cell patching revealed that the cell membrane depolarized in the electric field, and buffering of extracellular calcium via EGTA prevented cell migration under these conditions. Immunocytochemical staining indicated that the same electric intensity could also be used to enhance differentiation and increase the percentage of cell differentiation into neurons, but not astrocytes and oligodendrocytes. The results indicate that DC electric field of this specific intensity is capable of promoting cell directional migration and orchestrating functional differentiation, suggestively mediated by calcium influx during DC field exposure. PMID:26068466

  2. Investigation of carbon cathode surface before and after the passage of combined dc vacuum arc with superimposed high-current arc pulses

    International Nuclear Information System (INIS)

    Zavaleyev, V.; Walkowicz, J.; Moszynski, D.

    2016-01-01

    The paper presents the results of studies of carbon cathode surface before and after the passage of the combined DC vacuum-arc with superimposed high-current arc pulses. Investigations of surface morphology of carbon cathode showed, that secondary nuclei of high-density are formed after passing of the combined DC-pulse vacuum-arc, which results in the formation of a globular structures. The phase structure analysis by Raman spectroscopy showed that even at a minimum operation time (5 s) of the combined DC-pulse vacuum-arc broadening of the peaks 1355 and 1583 cm-1 occurs, which means that the carbon cathode surface undergo phase transformation. Results obtained by XPS spectroscopy demonstrate that the globular structures formed on the cathode surface are composed of sp 3 -bonded carbon atoms and carbon-oxygen bonds.

  3. An Original Transformer and Switched-Capacitor (T & SC-Based Extension for DC-DC Boost Converter for High-Voltage/Low-Current Renewable Energy Applications: Hardware Implementation of a New T & SC Boost Converter

    Directory of Open Access Journals (Sweden)

    Sanjeevikumar Padmanaban

    2018-03-01

    Full Text Available In this article a new Transformer and Switched Capacitor-based Boost Converter (T & SC-BC is proposed for high-voltage/low-current renewable energy applications. The proposed T & SC-BC is an original extension for DC-DC boost converter which is designed by utilizing a transformer and switched capacitor (T & SC. Photovoltaic (PV energy is a fast emergent segment among the renewable energy systems. The proposed T & SC-BC combines the features of the conventional boost converter and T & SC to achieve a high voltage conversion ratio. A Maximum Power Point Tracking (MPPT controller is compulsory and necessary in a PV system to extract maximum power. Thus, a photovoltaic MPPT control mechanism also articulated for the proposed T & SC-BC. The voltage conversion ratio (Vo/Vin of proposed converter is (1 + k/(1 − D where, k is the turns ratio of the transformer and D is the duty cycle (thus, the converter provides 9.26, 13.88, 50/3 voltage conversion ratios at 78.4 duty cycle with k = 1, 2, 2.6, respectively. The conspicuous features of proposed T & SC-BC are: (i a high voltage conversion ratio (Vo/Vin; (ii continuous input current (Iin; (iii single switch topology; (iv single input source; (v low drain to source voltage (VDS rating of control switch; (vi a single inductor and a single untapped transformer are used. Moreover, the proposed T & SC-BC topology was compared with recently addressed DC-DC converters in terms of number of components, cost, voltage conversion ratio, ripples, efficiency and power range. Simulation and experimental results are provided which validate the functionality, design and concept of the proposed approach.

  4. Modeling of HVDC System to Improve Estimation of Transient DC Current and Voltages for AC Line-to-Ground Fault—An Actual Case Study in Korea

    Directory of Open Access Journals (Sweden)

    Dohoon Kwon

    2017-10-01

    Full Text Available A new modeling method for high voltage direct current (HVDC systems and associated controllers is presented for the power system simulator for engineering (PSS/E simulation environment. The aim is to improve the estimation of the transient DC voltage and current in the event of an AC line-to-ground fault. The proposed method consists primary of three interconnected modules for (a equation conversion; (b control-mode selection; and (c DC-line modeling. Simulation case studies were carried out using PSS/E and a power systems computer aided design/electromagnetic transients including DC (PSCAD/EMTDC model of the Jeju– Haenam HVDC system in Korea. The simulation results are compared with actual operational data and the PSCAD/EMTDC simulation results for an HVDC system during single-phase and three-phase line-to-ground faults, respectively. These comparisons show that the proposed PSS/E modeling method results in the improved estimation of the dynamic variation in the DC voltage and current in the event of an AC network fault, with significant gains in computational efficiency, making it suitable for real-time analysis of HVDC systems.

  5. Controlled formation of anatase and rutile TiO2 thin films by reactive magnetron sputtering

    NARCIS (Netherlands)

    Rafieian Boroujeni, Damon; Ogieglo, Wojciech; Savenije, Tom; Lammertink, Rob G.H.

    2015-01-01

    We discuss the formation of TiO2 thin films via DC reactive magnetron sputtering. The oxygen concentration during sputtering proved to be a crucial parameter with respect to the final film structure and properties. The initial deposition provided amorphous films that crystallise upon annealing to

  6. Controlled formation of anatase and rutile TiO2 thin films by reactive magnetron sputtering

    OpenAIRE

    Rafieian Boroujeni, Damon; Ogieglo, Wojciech; Savenije, Tom; Lammertink, Rob G.H.

    2015-01-01

    We discuss the formation of TiO2 thin films via DC reactive magnetron sputtering. The oxygen concentration during sputtering proved to be a crucial parameter with respect to the final film structure and properties. The initial deposition provided amorphous films that crystallise upon annealing to anatase or rutile, depending on the initial sputtering conditions. Substoichiometric films (TiOx

  7. Advanced DC/DC converters

    CERN Document Server

    Luo, Fang Lin

    2003-01-01

    DC/DC conversion techniques have undergone rapid development in recent decades. With the pioneering work of these authors, DC/DC converters have now moved into their sixth generation. This book offers a concise, practical presentation of DC/DC converters, summarizing the spectrum of conversion tecnologies and presentingmany new ideas and more than 100 new topologies. Nowhere else in the literature are DC/DC converters so logically sorted and systematically introduced, and nowhere else can readers find detailed information on prototype topologies that represent a major contribution to modern power engineering. More than 320 figures, 60 tables, and 500 formulae facilitate understand and provide precise data.

  8. Electrochemical behavior of single layer CrN, TiN, TiAlN coatings and nanolayered TiAlN/CrN multilayer coatings prepared by reactive direct current magnetron sputtering

    International Nuclear Information System (INIS)

    William Grips, V.K.; Barshilia, Harish C.; Selvi, V. Ezhil; Kalavati; Rajam, K.S.

    2006-01-01

    The corrosion behaviors of single layer TiN, CrN, TiAlN and multilayer TiAlN/CrN coatings, deposited on steel substrate using a multi-target reactive direct current magnetron sputtering process, were studied in 3.5% NaCl solution by potentiodynamic polarization and electrochemical impedance spectroscopy (EIS). The total thickness of the coatings was about 1.5 μm. About 0.5 μm thick chromium interlayer was used for improved adhesion of the coatings. The potentiodynamic polarization measurements showed that for all the coatings the corrosion potential shifted to higher values as compared to the uncoated substrate. Similarly, the corrosion current density decreased for coated samples, indicating better corrosion resistance of the coated samples. The multilayer coatings of TiAlN/CrN exhibited superior corrosion behavior as compared to the single layer coatings. The Nyquist and the Bode plots obtained from the EIS measurements were fitted by appropriate equivalent circuits to calculate the pore resistance, the charge transfer resistance and the capacitance. These studies revealed that the pore resistance was lowest for TiN coatings, which increased for TiAlN coatings. TiAlN/CrN multilayer coatings exhibited highest pore resistance. No significant change in the capacitive behavior of the coatings was observed, suggesting minimal morphological changes as a result of immersion in the electrolyte. This could be attributed to shorter immersion durations. These studies were confirmed by examining the corroded samples under scanning electron microscope. Preliminary experiments conducted with additional interlayer of electroless nickel (5.0 μm thick) have shown significant improvement in the corrosion resistance of the coatings

  9. Control algorithm for the inverter fed induction motor drive with DC current feedback loop based on principles of the vector control

    Energy Technology Data Exchange (ETDEWEB)

    Vuckovic, V.; Vukosavic, S. (Electrical Engineering Inst. Nikola Tesla, Viktora Igoa 3, Belgrade, 11000 (Yugoslavia))

    1992-01-01

    This paper brings out a control algorithm for VSI fed induction motor drives based on the converter DC link current feedback. It is shown that the speed and flux can be controlled over the wide speed and load range quite satisfactorily for simpler drives. The base commands of both the inverter voltage and frequency are proportional to the reference speed, but each of them is further modified by the signals derived from the DC current sensor. The algorithm is based on the equations well known from the vector control theory, and is aimed to obtain the constant rotor flux and proportionality between the electrical torque, the slip frequency and the active component of the stator current. In this way, the problems of slip compensation, Ri compensation and correction of U/f characteristics are solved in the same time. Analytical considerations and computer simulations of the proposed control structure are in close agreement with the experimental results measured on a prototype drive.

  10. Investigation of the possible technological use of magnetron-synthetic coverings on the basis of niobium nitridium to manufacture high conductivity windings during the generation of power magnetic fields

    International Nuclear Information System (INIS)

    Kadyrzhanov, K.; Zhetbaev, A.; Tuleushev, A.; Penkov, F.; Lisitsin, V.; Kim, S.; Tuleushev, Yu.; Turkebaev, T.; Borisenko, A.; Gorlachev, I.; Platov, A.; Lisuchin, S.; Skoz, E.; Zhukov, V.; Guliykin, Yu.; Chavalinsky, Yu.

    1996-01-01

    The main objective. The objective of this project is to investigate the possibilities for technological use of niobium nitride-based magnetron synthesized coatings for the purpose of manufacture of superconducting tape windings when generating strong magnetic fields for NMR-tomographs and commercial magnets. Background. Niobium nitride can be produced by sputtering as a continuous coating directly on the surface of a substrate made of a normal conductor, e.g. a copper or aluminium thin tape, by well-known techniques of plasma-chemical synthesis, using magnetron procedure (d.c. magnetron), allowing al synthesis, using magnetron procedure (d.c. magnetron), allowing to solve some difficult problems of superconductor manufacture by means of plastic deformation. For example, risk of break of a superconducting thread will no longer arises and the procedure of control for heat removal and relation between the thickness of superconducting and normal components will be made much easier, and, in turn, this enables to enhance stability of superconductivity and to prevent flux quench. Methodology. The group of eleven specialists from NNC RK will be occupied in the magnetron synthesis of niobium nitride coatings of copper and aluminum foils (five persons) and in its X-ray, nuclear-physical and electron microscopic analysis (six persons). The group of six specialists from the ULBA plant will be occupied in determination of the critical parameters of belt samples with niobium nitride coatings produced by Inst. of Nuclear Physics' specialists. Multi-purpose research test benches for determination of superconductor critical parameters that are available at the ULBA enables to test different types superconductor characteristics, including film ones, in magnetic fields up to 11 T at helium temperatures. Expected Results. As the result of the project execution complete evaluation concerning technical reasoning for magnetron ways of coating synthesis of niobium nitride when

  11. Rutile TiO2 thin films grown by reactive high power impulse magnetron sputtering

    International Nuclear Information System (INIS)

    Agnarsson, B.; Magnus, F.; Tryggvason, T.K.; Ingason, A.S.; Leosson, K.; Olafsson, S.; Gudmundsson, J.T.

    2013-01-01

    Thin TiO 2 films were grown on Si(001) substrates by reactive dc magnetron sputtering (dcMS) and high power impulse magnetron sputtering (HiPIMS) at temperatures ranging from 300 to 700 °C. Optical and structural properties of films were compared both before and after post-annealing using scanning electron microscopy, low angle X-ray reflection (XRR), grazing incidence X-ray diffractometry and spectroscopic ellipsometry. Both dcMS- and HiPIMS-grown films reveal polycrystalline rutile TiO 2 , even prior to post-annealing. The HiPIMS-grown films exhibit significantly larger grains compared to that of dcMC-grown films, approaching 100% of the film thickness for films grown at 700 °C. In addition, the XRR surface roughness of HiPIMS-grown films was significantly lower than that of dcMS-grown films over the whole temperature range 300–700 °C. Dispersion curves could only be obtained for the HiPIMS-grown films, which were shown to have a refractive index in the range of 2.7–2.85 at 500 nm. The results show that thin, rutile TiO 2 films, with high refractive index, can be obtained by HiPIMS at relatively low growth temperatures, without post-annealing. Furthermore, these films are smoother and show better optical characteristics than their dcMS-grown counterparts. - Highlights: • We demonstrate growth of rutile TiO 2 on Si (111) by high power impulse magnetron sputtering. • The films exhibit significantly larger grains than dc magnetron sputtered films • TiO 2 films with high refractive index are obtained without post-growth annealing

  12. Phase Grouping of Larmor Electrons by a Synchronous Wave in Controlled Magnetrons

    Energy Technology Data Exchange (ETDEWEB)

    Kazakevich, G. [MUONS Inc., Batavia; Johnson, R. [MUONS Inc., Batavia; Lebedev, V. [Fermilab; Yakovlev, V. [Fermilab

    2018-04-01

    A simplified analytical model based on the charge drift approximation has been developed. It considers the resonant interaction of the synchronous wave with the flow of Larmor electrons in a magnetron. The model predicts stable coherent generation of the tube above and below the threshold of self-excitation. This occurs if the magnetron is driven by a sufficient resonant injected signal (up to -10 dB). The model substantiates precise stability, high efficiency and low noise at the range of the magnetron power control over 10 dB by variation of the magnetron current. The model and the verifying experiments with 2.45 GHz, 1 kW magnetrons are discussed.

  13. Study of static properties of magnetron-type space charges

    International Nuclear Information System (INIS)

    Delcroix, Jean-Loup

    1953-01-01

    This research thesis reports an in-depth analysis of physical properties of static regimes to address the issue of space charges. This theoretical study of the Hull magnetron is followed by the description of experiments on the Hull magnetron which highlight transitions between the different regimes. Then, another theoretical approach aims at generalising the magnetron theory, based on other types of magnetron theory (general equations of magnetron-type space charges, inverted Hull magnetron theory, circular field magnetron theory)

  14. Effect of Fluctuations of DC Current on Properties of Plasma Jet Generated in Plasma Spraying Torch with Gerdien Arc

    Czech Academy of Sciences Publication Activity Database

    Hrabovský, Milan; Kopecký, Vladimír; Chumak, Oleksiy; Kavka, Tetyana; Mašláni, Alan; Sember, Viktor; Ctibor, Pavel

    2009-01-01

    Roč. 13, č. 2 (2009), s. 229-240 ISSN 1093-3611 Institutional research plan: CEZ:AV0Z20430508 Keywords : Plasma torch * dc arc * plasma jet * fluctuations * plasma spraying Subject RIV: BL - Plasma and Gas Discharge Physics Impact factor: 0.333, year: 2009 http://www.begellhouse.com/journals/57d172397126f956,4e2a92412d8c6bb5.html

  15. 75 FR 61989 - Airworthiness Directives; McDonnell Douglas Corporation Model DC-8-31, DC-8-32, DC-8-33, DC-8-41...

    Science.gov (United States)

    2010-10-07

    ... Airworthiness Directives; McDonnell Douglas Corporation Model DC- 8-31, DC-8-32, DC-8-33, DC-8-41, DC-8-42, and... to all of the McDonnell Douglas Corporation airplanes identified above. The existing AD currently... the following new airworthiness directive (AD): 2010-21-03 McDonnell Douglas Corporation: Amendment 39...

  16. Magnetoimpedance effect of the Ni80Fe20/Cu composite wires: The influence of DC current imposed on the Cu base

    Directory of Open Access Journals (Sweden)

    Delu Chen

    2014-06-01

    Full Text Available In this paper, the copper composite wires of 75 μm in diameter with a sputtered layer of Ni80Fe20 permalloy were prepared, with a DC current applied to the basal Cu terminals during the fabrication process. The influence of the DC current on the magnetic configuration and Magneto-Impedance (MI effect was studied. The results indicate that both the current amplitude and actuation duration have significant effect on the magnetic properties of the Ni80Fe20 layer. With appropriate current applied, the induced magnetic field leads to a circumferential magnetic domain structure and reduces significantly the equivalent anisotropy field of Ni80Fe20 layer. Then, the GMI ratio of the composite wires was significantly increased. A maximum GMI of 194.8% can be reached when the current was fixed at 100 mA and the Ni80Fe20 thickness is 780 nm. If the Ni80Fe20 thickness is above 780 nm, the coercivity of the coating layer increases while the GMI ratio of the composite wire reduces, since the magnetic anisotropy of the Ni80Fe20 layer varies from circumferential to longitudinal. The results were explained combining the thermal and magnetic effects of current.

  17. Improvements in DC Current-Ioltage (I-V) Characteristics of n-GaN Schottky Diode using Metal Overlap Edge Termination

    International Nuclear Information System (INIS)

    Munir, T.; Aziz, A. A.; Abdullah, M. J.; Ain, M. F.

    2010-01-01

    Practical design of GaN Schottky diodes incorporating a field plate necessitates an understanding of how the addition of such plate affects the diode performance. In this paper, we investigated the effects on DC current-voltage (I-V) characteristics of n-GaN schottky diode by incorporating metal overlap edge termination. The thickness of the oxide film varies from 0.001 to 1 micron. Two-dimensional Atlas/Blaze simulations revealed that severe electric field crowding across the metal semiconductor contact will cause reliability concern and limit device breakdown voltage. DC current-voltage (I-V) measurements indicate that the forward currents are higher for thinner oxide film schottky diodes with metal overlap edge termination than those of unterminated schottky diodes. The forward current increased due to formation of an accumulation layer underneath the oxide layer. Extending the field plate to beyond periphery regions of schottky contact does not result in any significant increase in forward current. The new techniques of ramp oxide metal overlap edge termination have been implemented to increase the forward current of n-GaN schottky diode. In reverse bias, breakdown voltage increased with edge termination oxide up to a certain limit of oxide thickness.

  18. Experimental study on an S-band near-field microwave magnetron power transmission system on hundred-watt level

    Science.gov (United States)

    Zhang, Biao; Jiang, Wan; Yang, Yang; Yu, Chengyang; Huang, Kama; Liu, Changjun

    2015-11-01

    A multi-magnetron microwave source, a metamaterial transmitting antenna, and a large power rectenna array are presented to build a near-field 2.45 GHz microwave power transmission system. The square 1 m2 rectenna array consists of sixteen rectennas with 2048 Schottky diodes for large power microwave rectifying. It receives microwave power and converts them into DC power. The design, structure, and measured performance of a unit rectenna as well as the entail rectenna array are presented in detail. The multi-magnetron microwave power source switches between half and full output power levels, i.e. the half-wave and full-wave modes. The transmission antenna is formed by a double-layer metallic hole array, which is applied to combine the output power of each magnetron. The rectenna array DC output power reaches 67.3 W on a 1.2 Ω DC load at a distance of 5.5 m from the transmission antenna. DC output power is affected by the distance, DC load, and the mode of microwave power source. It shows that conventional low power Schottky diodes can be applied to a microwave power transmission system with simple magnetrons to realise large power microwave rectifying.

  19. DC injection into low voltage AC networks

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2005-07-01

    This report summarises the results of a study investigating the impact of levels of injected DC current injections on a low voltage AC distribution network systems in order to recommend acceptable limits of DC from microgeneration. Relevant literature is reviewed, and the impact of DC levels in distribution transformers, transformer modelling, and instrumental transformers are discussed. The impact of DC in residual current devices (RCD) and in domestic electricity watt hour meters is examined along with DC enhanced corrosion, corrosion failure, and the measurement of DC current injection. Sources of DC injection outlined include DC from computer power supplies, network faults, geomagnetic phenomena, lighting circuits/dimmers, and embedded generators.

  20. Effect of impurities on the steady component of the current in a quantum wire under the joint action of ac and dc fields

    International Nuclear Information System (INIS)

    Zav'yalov, D. V.; Kryuchkov, S. V.

    2008-01-01

    The current flowing along a cylindrical quantum wire with a superlattice in the case of the simultaneous application of dc and ac fields is calculated. It is assumed that the wire contains impurity centers, whose ionization results in the generation of nonequilibrium carriers in the conduction band. It is found that the dependence of the steady component of the current on the ac-field frequency is a step-like function. It is shown that the distance between steps depends on the conduction miniband width and the transverse quantum confinement parameters and is independent of the impurity-level depth.

  1. How much electricity can we save by using direct current circuits in homes? Understanding the potential for electricity savings and assessing feasibility of a transition towards DC powered buildings

    International Nuclear Information System (INIS)

    Glasgo, Brock; Azevedo, Inês Lima; Hendrickson, Chris

    2016-01-01

    Highlights: • DC distribution systems are analyzed using monitored appliance and solar PV data. • DC-distributed PV energy generates savings under real-world load and solar profiles. • Savings from direct-DC are generally not cost-effective in current markets. • Non-technical hurdles remain before DC can be widely adopted in US homes. - Abstract: Advances in semiconductor-based power electronics and growing direct current loads in buildings have led researchers to reconsider whether buildings should be wired with DC circuits to reduce power conversions and facilitate a transition to efficient DC appliances. The feasibility, energy savings, and economics of such systems have been assessed and proven in data centers and commercial buildings, but the outcomes are still uncertain for the residential sector. In this work, we assess the technical and economic feasibility of DC circuits using data for 120 traditionally-wired AC homes in Austin, Texas to understand the effect of highly variable demand profiles on DC-powered residences, using appliance-level use and solar generation data, and performing a Monte Carlo simulation to quantify costs and benefits. Results show site energy savings between 9% and 20% when solar PV is distributed to all home appliances. When battery storage for excess solar energy is considered, these savings increase to 14–25%. At present DC equipment prices, converting all equipment to DC causes levelized annual costs of electricity to homeowners to roughly double. However, by converting only homes’ air conditioning condensing units to DC, the costs of direct-DC are greatly reduced and home site energy savings of 7–16% are generated. In addition to quantifying savings, we find major nontechnical barriers to implementing direct-DC in homes. These include a lack of standards for such systems, a relatively small market for DC appliances and components, utility programs designed for AC power, and a workforce unfamiliar with DC

  2. Multilevel DC link inverter

    Science.gov (United States)

    Su, Gui-Jia

    2003-06-10

    A multilevel DC link inverter and method for improving torque response and current regulation in permanent magnet motors and switched reluctance motors having a low inductance includes a plurality of voltage controlled cells connected in series for applying a resulting dc voltage comprised of one or more incremental dc voltages. The cells are provided with switches for increasing the resulting applied dc voltage as speed and back EMF increase, while limiting the voltage that is applied to the commutation switches to perform PWM or dc voltage stepping functions, so as to limit current ripple in the stator windings below an acceptable level, typically 5%. Several embodiments are disclosed including inverters using IGBT's, inverters using thyristors. All of the inverters are operable in both motoring and regenerating modes.

  3. A DC Transformer

    Data.gov (United States)

    National Aeronautics and Space Administration — The goal of the project was to demonstrate a true direct current (DC) transformer, a new electro-mechanical component with potentially high power applications; in...

  4. Simulation Study Using an Injection Phase-locked Magnetron as an Alternative Source for SRF Accelerators

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Haipeng [Thomas Jefferson National Accelerator Facility, Newport News, VA (United States); Plawski, Tomasz E. [Thomas Jefferson National Accelerator Facility, Newport News, VA (United States); Rimmer, Robert A. [Thomas Jefferson National Accelerator Facility, Newport News, VA (United States)

    2015-09-01

    As a drop-in replacement for the CEBAF CW klystron system, a 1497 MHz, CW-type high-efficiency magnetron using injection phase lock and amplitude variation is attractive. Amplitude control using magnetic field trimming and anode voltage modulation has been studied using analytical models and MATLAB/Simulink simulations. Since the 1497 MHz magnetron has not been built yet, previously measured characteristics of a 2.45GHz cooker magnetron are used as reference. The results of linear responses to the amplitude and phase control of a superconducting RF (SRF) cavity, and the expected overall benefit for the current CEBAF and future MEIC RF systems are presented in this paper.

  5. Liquid helium boil-off measurements of heat leakage from sinter-forged BSCCO current leads under DC and AC conditions

    International Nuclear Information System (INIS)

    Cha, Y.S.; Niemann, R.C.; Hull, J.R.; Youngdahl, C.A.; Lanagan, M.T.; Nakade, M.; Hara, T.

    1995-06-01

    Liquid helium boil-off experiments are conducted to determine the heat leakage rate of a pair of BSCCO 2223 high-temperature superconductor current leads made by sinter forging. The experiments are carried out in both DC and AC conditions and with and without an intermediate heat intercept. Current ranges are from 0-500 A for DC tests and 0-1,000 A rms for AC tests. The leads are self-cooled. Results show that magnetic hysteresis (AC) losses for both the BSCCO leads and the low-temperature superconductor current jumper are small for the current range. It is shown that significant reduction in heat leakage rate (liquid helium boil-off rate) is realized by using the BSCCO superconductor leads. At 100 A, the heat leakage rate of the BSCCO/copper binary lead is approximately 29% of that of the conventional copper lead. Further reduction in liquid helium boil-off rate can be achieved by using an intermediate heat intercept. For example, at 500 K, the heat leakage rate of the BSCCO/copper binary lead is only 7% of that of the conventional copper lead when an intermediate heat intercept is used

  6. A Single-Phase Current Source Solar Inverter with Constant Instantaneous Power, Improved Reliability, and Reduced-Size DC-Link Filter

    Science.gov (United States)

    Bush, Craig R.

    This dissertation presents a novel current source converter topology that is primarily intended for single-phase photovoltaic (PV) applications. In comparison with the existing PV inverter technology, the salient features of the proposed topology are: a) the low frequency (double of line frequency) ripple that is common to single-phase inverters is greatly reduced; b) the absence of low frequency ripple enables significantly reduced size pass components to achieve necessary DC-link stiffness and c) improved maximum power point tracking (MPPT) performance is readily achieved due to the tightened current ripple even with reduced-size passive components. The proposed topology does not utilize any electrolytic capacitors. Instead an inductor is used as the DC-link filter and reliable AC film capacitors are utilized for the filter and auxiliary capacitor. The proposed topology has a life expectancy on par with PV panels. The proposed modulation technique can be used for any current source inverter where an unbalanced three-phase operation is desires such as active filters and power controllers. The proposed topology is ready for the next phase of microgrid and power system controllers in that it accepts reactive power commands. This work presents the proposed topology and its working principle supported by with numerical verifications and hardware results. Conclusions and future work are also presented.

  7. Milliwatt dc/dc Inverter

    Science.gov (United States)

    Mclyman, C. W.

    1983-01-01

    Compact dc/dc inverter uses single integrated-circuit package containing six inverter gates that generate and amplify 100-kHz square-wave switching signal. Square-wave switching inverts 10-volt local power to isolated voltage at another desired level. Relatively high operating frequency reduces size of filter capacitors required, resulting in small package unit.

  8. A Circulating Current Suppression Method for Parallel Connected Voltage-Source-Inverters (VSI) with Common DC and AC Buses

    DEFF Research Database (Denmark)

    Wei, Baoze; Guerrero, Josep M.; Quintero, Juan Carlos Vasquez

    2016-01-01

    This paper describes a theoretical with experiment study on a control strategy for the parallel operation of threephase voltage source inverters (VSI), to be applied to uninterruptible power systems (UPS). A circulating current suppression strategy for parallel VSIs is proposed in this paper based...... on circulating current control loops used to modify the reference currents by compensating the error currents among parallel inverters. Both of the cross and zero-sequence circulating currents are considered. The proposed method is coordinated together with droop and virtual impedance control. In this paper......, droop control is used to generate the reference voltage of each inverter, and the virtual impedance is used to fix the output impedance of the inverters. In addition, a secondary control is used in order to recover the voltage deviation caused by the virtual impedance. And the auxiliary current control...

  9. dc Arc Fault Effect on Hybrid ac/dc Microgrid

    Science.gov (United States)

    Fatima, Zahra

    The advent of distributed energy resources (DER) and reliability and stability problems of the conventional grid system has given rise to the wide spread deployment of microgrids. Microgrids provide many advantages by incorporating renewable energy sources and increasing the reliability of the grid by isolating from the main grid in case of an outage. AC microgrids have been installed all over the world, but dc microgrids have been gaining interest due to the advantages they provide over ac microgrids. However the entire power network backbone is still ac and dc microgrids require expensive converters to connect to the ac power network. As a result hybrid ac/dc microgrids are gaining more attention as it combines the advantages of both ac and dc microgrids such as direct integration of ac and dc systems with minimum number of conversions which increases the efficiency by reducing energy losses. Although dc electric systems offer many advantages such as no synchronization and no reactive power, successful implementation of dc systems requires appropriate protection strategies. One unique protection challenge brought by the dc systems is dc arc faults. A dc arc fault is generated when there is a gap in the conductor due to insulation degradation and current is used to bridge the gap, resulting in an arc with very high temperature. Such a fault if it goes undetected and is not extinguished can cause damage to the entire system and cause fires. The purpose of the research is to study the effect of the dc arc fault at different locations in the hybrid ac/dc microgrid and provide insight on the reliability of the grid components when it is impacted by arc faults at various locations in the grid. The impact of dc arc fault at different locations on the performance of the PV array, wind generation, and constant power loads (CPL) interfaced with dc/dc converters is studied. MATLAB/Simulink is used to model the hybrid ac/dc microgrid and arc fault.

  10. Crafting glass vessels: current research on the ancient glass collections in the Freer Gallery of Art, Washington, D.C.

    Science.gov (United States)

    Nagel, Alexander; McCarthy, Blythe; Bowe, Stacy

    Our knowledge of glass production in ancient Egypt has been well augmented by the publication of recently excavated materials and glass workshops, but also by more recent materials analysis, and experiments of modern glass-makers attempting to reconstruct the production process of thin-walled coreformed glass vessels. From the mounting of a prefabricated core to the final glass product our understanding of this profession has much improved. The small but well preserved glass collection of the Freer Gallery of Art in Washington, D.C. is a valid tool for examining and studying the technology and production of ancient Egyptian core formed glass vessels. Charles Lang Freer (1854-1919) acquired most of the material from Giovanni Dattari in Cairo in 1909. Previously the glass had received only limited discussion, suggesting that most of these vessels were produced in the 18th Dynasty in the 15th and 14th centuries BCE, while others date from the Hellenistic period and later. In an ongoing project we conducted computed radiography in conjunction with qualitative x-ray fluorescence analysis on a selected group of vessels to understand further aspects of the ancient production process. This paper will provide an overview of our recent research and present our data-gathering process and preliminary results. How can the examinations of core formed glass vessels in the Freer Gallery contribute to our understanding of ancient glass production and technology? By focusing on new ways of looking at old assumptions using the Freer Gallery glass collections, we hope to increase understanding of the challenges of the production process of core-vessel technology as represented by these vessels.

  11. PENGGUNAAN FUZZY LOGIC UNTUK KONTROL PARALLEL CONVERTER DC-DC

    Directory of Open Access Journals (Sweden)

    Bambang Prio Hartono

    2012-09-01

    Full Text Available Abstract: Using system fuzzy logic as control  technology have been used on low load dc-dc converter with combined parallel compiled  dc-dc converter can  obtain big load.   With existence of differrence of component parameter and each parallel compiled converter can obtained different current  and voltage output.  Function of controller  for to do adjustment, so that current which is applied  to  load by each converter  can be obtained  difference error as small as possible or same. The object of research is developing design of large signal dc-dc converter which is  combined with using  FLC so that  obtain  better performance.  To get better performance have been made plant model and simulation with CDE method.  The more systematic  system and design is needed to overcome bigger load  on dc-dc converter, so that parallel  compiled current master slave control system on dc-dc converter with using fuzzy logic  controller is used. Result of  research showed that error or difference of  current  which is applied to load can handled by fuzzy logic  controller.  Technic of current and voltage controller co to do adjustment current and voltage distribution  equally to load.  Distribution of iL1,iL2 and  output voltage Vo on dc-dc  converter with load 2,25 until  7,875 and voltage  100  until 120 volt,  load current beetwen  12 until 48, % relatif  error  Vo  0,4% until  0,9%.

  12. Pulse Pattern-Modulated Strategy for Harmonic Current Components Reduction in Three-Phase AC–DC Converters

    DEFF Research Database (Denmark)

    Davari, Pooya; Zare, Firuz; Blaabjerg, Frede

    2016-01-01

    , which need to be considered in order to be competitive in the market. Therefore, having a flexibility to meet various requirements imposed by the standard recommendations or costumer needs is at most desirable. This makes the generated harmonic current mitigation a challenging task especially with three......-phase diode bridge rectifier, which still is preferred in many power electronic systems. This paper addresses a novel current modulation strategy using a single-switch boost three-phase diode bridge rectifier. The proposed method can selectively mitigate current harmonics, which makes it suitable...

  13. Pulse pattern modulated strategy for harmonic current components reduction in three-phase AC-DC converters

    DEFF Research Database (Denmark)

    Davari, Pooya; Zare, Firuz; Blaabjerg, Frede

    2015-01-01

    , which need to be considered in order to be competitive in the market. Therefore, having a flexibility to meet various requirements imposed by the standard recommendations or costumer needs is at most desirable. This makes the generated harmonic current mitigation a challenging task especially with three......-phase diode bridge rectifier, which still is preferred in many power electronic systems. This paper addresses a novel current modulation strategy using a single-switch boost three-phase diode bridge rectifier. The proposed method can selectively mitigate current harmonics, which makes it suitable...

  14. Bidirectional dc-to-dc Power Converter

    Science.gov (United States)

    Griesbach, C. R.

    1986-01-01

    Solid-state, series-resonant converter uses high-voltage thyristors. Converter used either to convert high-voltage, low-current dc power to lowvoltage, high current power or reverse. Taking advantage of newly-available high-voltage thyristors to provide better reliability and efficiency than traditional converters that use vacuum tubes as power switches. New converter essentially maintenance free and provides greatly increased mean time between failures. Attractive in industrial applications whether or not bidirectional capability is required.

  15. The Pulsed Cylindrical Magnetron for Deposition

    Science.gov (United States)

    Korenev, Sergey

    2012-10-01

    The magnetron sputtering deposition of films and coatings broadly uses in microelectronics, material science, environmental applications and etc. The rate of target evaporation and time for deposition of films and coatings depends on magnetic field. These parameters link with efficiency of gas molecules ionization by electrons. The cylindrical magnetrons use for deposition of films and coatings on inside of pipes for different protective films and coatings in oil, chemical, environmental applications. The classical forming of magnetic field by permanent magnets or coils for big and long cylindrical magnetrons is complicated. The new concept of pulsed cylindrical magnetron for high rate deposition of films and coating for big and long pipes is presented in this paper. The proposed cylindrical magnetron has azimuthally pulsed high magnetic field, which allows forming the high ionized plasma and receiving high rate of evaporation material of target (central electrode). The structure of proposed pulsed cylindrical magnetron sputtering system is given. The main requirements to deposition system are presented. The preliminary data for forming of plasma and deposition of Ta films and coatings on the metal pipers are discussed. The comparison of classical and proposed cylindrical magnetrons is given. The analysis of potential applications is considered.

  16. Measurements of Photocathode Operational Lifetime at Beam Currents up to 10 mA using an Improved DC High Voltage GaAs Photogun

    International Nuclear Information System (INIS)

    Grames, J.; Poelker, M.; Adderley, P.; Brittian, J.; Clark, J.; Hansknecht, J.; Machie, D.; Stutzman, M. L.; Surles-Law, K.

    2007-01-01

    This work extends past research at Jefferson Lab aimed at better appreciating the mechanisms that limit photocathode operational lifetime at high current (> 1 mA). Specifically, the performance of an improved 100 kV DC high voltage load locked photogun will be described. Although difficult to measure directly, we believe the new gun has better vacuum conditions compared to the original gun, as indicated by enhanced photocathode lifetimes exceeding 2000 C using a 1.55 mm diameter drive laser spot at the photocathode. In addition, the dependence of the lifetime on the laser spot size at the photocathode was measured and a charge density lifetime exceeding 106 C/cm2 was measured with a 0.32 mm laser spot diameter

  17. Measurements of photocathode operational lifetime at beam currents up to 10-mA using an improved DC high voltage GaAs photogun

    International Nuclear Information System (INIS)

    J. Grames; M. Poelker; P. Adderley; J. Brittian; J. Clark; J. Hansknecht; D. Machie; M.L. Stutzman; K. Surles-Law

    2007-01-01

    This work extends past research at Jefferson Lab aimed at better appreciating the mechanisms that limit photocathode operational lifetime at high current (> 1 mA). Specifically, the performance of an improved 100 kV DC high voltage load locked photogun will be described. Although difficult to measure directly, we believe the new gun has better vacuum conditions compared to the original gun, as indicated by enhanced photocathode lifetimes exceeding 2000 C using a 1.55 mm diameter drive laser spot at the photocathode. In addition, the dependence of the lifetime on the laser spot size at the photocathode was measured and a charge density lifetime exceeding 10 6 C/cm 2 was measured with a 0.32 mm laser spot diameter

  18. Analysing bifurcations encountered in numerical modelling of current transfer to cathodes of dc glow and arc discharges

    International Nuclear Information System (INIS)

    Almeida, P G C; Benilov, M S; Cunha, M D; Faria, M J

    2009-01-01

    Bifurcations and/or their consequences are frequently encountered in numerical modelling of current transfer to cathodes of gas discharges, also in apparently simple situations, and a failure to recognize and properly analyse a bifurcation may create difficulties in the modelling and hinder the understanding of numerical results and the underlying physics. This work is concerned with analysis of bifurcations that have been encountered in the modelling of steady-state current transfer to cathodes of glow and arc discharges. All basic types of steady-state bifurcations (fold, transcritical, pitchfork) have been identified and analysed. The analysis provides explanations to many results obtained in numerical modelling. In particular, it is shown that dramatic changes in patterns of current transfer to cathodes of both glow and arc discharges, described by numerical modelling, occur through perturbed transcritical bifurcations of first- and second-order contact. The analysis elucidates the reason why the mode of glow discharge associated with the falling section of the current-voltage characteristic in the solution of von Engel and Steenbeck seems not to appear in 2D numerical modelling and the subnormal and normal modes appear instead. A similar effect has been identified in numerical modelling of arc cathodes and explained.

  19. High power pulsed magnetron sputtering of transparent conducting oxides

    International Nuclear Information System (INIS)

    Sittinger, V.; Ruske, F.; Werner, W.; Jacobs, C.; Szyszka, B.; Christie, D.J.

    2008-01-01

    High power pulsed magnetron sputtering (HPPMS) has been used in order to study the deposition of transparent conducting oxides. We summarize the studies carried out on different materials (indium tin oxide-ITO and aluminium-doped zinc oxide-AZO) using rather different technological approaches, namely sputtering of ceramic targets and reactive sputtering. For the deposition of AZO reactive HPPMS for metallic targets has been used. A feedback control loop has been implemented in order to stabilize the discharge at any given setpoint on the hysteresis curve. The hysteresis was also found to have a rather untypical form. Reactive HPPMS was found to be a promising tool for obtaining high quality films of low total thickness. In the case of ITO deposition a ceramic target has been used. The process has been characterized in terms of its plasma emission and increasing indium ionization was found for higher peak power densities. The properties of the deposited films were compared to DC sputtered films. While for DC sputtering the choice of oxygen addition and shieldings is crucial for determining surface morphology and resistivity, in HPPMS sputtering peak power density has been found to be a good parameter for influencing the crystal structure. The morphologies obtained differ strongly from those seen in DC sputtering. At high power densities films with low surface roughness and excellent resistivity could be deposited without the use of shieldings

  20. Negative Ion Sources: Magnetron and Penning

    International Nuclear Information System (INIS)

    Faircloth, D C

    2013-01-01

    The history of the magnetron and Penning electrode geometry is briefly outlined. Plasma generation by electrical discharge-driven electron impact ionization is described and the basic physics of plasma and electrodes relevant to magnetron and Penning discharges are explained. Negative ions and their applications are introduced, along with their production mechanisms. Caesium and surface production of negative ions are detailed. Technical details of how to build magnetron and Penning surface plasma sources are given, along with examples of specific sources from around the world. Failure modes are listed and lifetimes compared. (author)

  1. Negative Ion Sources: Magnetron and Penning

    CERN Document Server

    Faircloth, D.C.

    2013-12-16

    The history of the magnetron and Penning electrode geometry is briefly outlined. Plasma generation by electrical discharge-driven electron impact ionization is described and the basic physics of plasma and electrodes relevant to magnetron and Penning discharges are explained. Negative ions and their applications are introduced, along with their production mechanisms. Caesium and surface production of negative ions are detailed. Technical details of how to build magnetron and Penning surface plasma sources are given, along with examples of specific sources from around the world. Failure modes are listed and lifetimes compared.

  2. On and off controlled resonant dc-dc power converter

    DEFF Research Database (Denmark)

    2015-01-01

    The present invention relates to a resonant DC-DC power converter comprising an input side circuit comprising a positive and a negative input terminal for receipt of an input voltage or current and an output side circuit comprising positive and negative output terminals for supply of a converter...... output voltage and connection to a converter load. The resonant DC-DC power converter further comprises a rectification circuit connected between an output of a resonant network and the output side circuit. The resonant network is configured for alternatingly being charged from the input voltage...... or current and discharged through the rectification circuit by a first controllable switch arrangement in accordance with a first switch control signal. A second controllable switch arrangement of the resonant DC-DC power converter is configured to select a first impedance characteristic of the resonant...

  3. Characterisation of magnetron sputtered SmCo5 thin films

    International Nuclear Information System (INIS)

    Wang, Y.; Sood, D.K.; Kothari

    1999-01-01

    SmCo 5 thin films were deposited using DC magnetron sputtering on single crystal silicon substrate with chromium and SiO 2 top layers. Deposition was carried out at three different substrate temperatures: room temperature, 400 deg C and 600 deg C. Films were characterised by using Rutherford Backscattering Spectroscopy (RBS), X-ray Diffraction (XRD), Secondary Ion Mass Spectrometry (SIMS) and SQUID magnetometer. RBS analysis indicated that the films have excellent stoichiometry with the Sm to Co ratio of 1:5. This analysis also showed that the films deposited or annealed at high temperatures (≥600 deg C) indicated significant inter-diffusion at the interface between the barrier layer and the film. Oxygen was found to be the major impurity in the films. XRD data indicated that the films formed 1:5 and 2:17 phases under different deposition conditions. The preliminary studies of these films using magnetic force microscopy revealed the presence of magnetic domains

  4. Analysis of DC properties and current distribution in TFAS ITER conductor samples using high Jc Nb3Sn advanced strands

    International Nuclear Information System (INIS)

    Zani, L.; Ciazynski, D.; Torre, A.; Bruzzone, P.; Stepanov, B.; Dewittler, R.; Staehli, F.

    2007-01-01

    Two full-size conductor samples using advanced Nb 3 Sn strands were tested in the SULTAN facility in 2005-2006 within (I,B,T) ranges close to the ITER operating conditions (B MAX ∼ 12 T, T ∼ 5 K). Each sample includes two conductor legs, connected together by a twin-box joint in their lower part. The conductor design is the same for the four legs, similar to that of the ITER Toroidal Field Model Coil, but each leg uses specific strands newly developed and industrially produced to reach higher J c performances than in previous samples. In addition to classical voltage taps and temperature sensors, the sample instrumentation included Hall probe (HP) heads positioned so as to discriminate current distribution between conductor main sub-cables (petals). In a first simple approach, we analyse the results supposing that the conductor drives a uniform current among strands. The model is mainly based on geometrical considerations associated with a global approach on strand mechanical behavior. In a second part, we model the conductor in a more realistic way with different currents shared between main sub-cables. Taking into account various geometrical aspects (spiral trajectories, precise self-field maps...) the current in all petals are reconstructed with help of HP's signals, expected to experience self-field from CICC's. The mechanical aspects are also tentatively considered (electromagnetic load, bending strain...). Global results for both samples are shown, and possible inaccuracies due to geometrical parameters (petals positioning) are discussed. Those data are then injected into a Matlab program for electrical and geometrical CICC modeling (derived from the previous ENSIC code from CEA) and compared with dedicated experimental runs. Results are finally commented on the basis of overall consistency with HP's signals. (authors)

  5. Auxiliary resonant DC tank converter

    Science.gov (United States)

    Peng, Fang Z.

    2000-01-01

    An auxiliary resonant dc tank (ARDCT) converter is provided for achieving soft-switching in a power converter. An ARDCT circuit is coupled directly across a dc bus to the inverter to generate a resonant dc bus voltage, including upper and lower resonant capacitors connected in series as a resonant leg, first and second dc tank capacitors connected in series as a tank leg, and an auxiliary resonant circuit comprising a series combination of a resonant inductor and a pair of auxiliary switching devices. The ARDCT circuit further includes first clamping means for holding the resonant dc bus voltage to the dc tank voltage of the tank leg, and second clamping means for clamping the resonant dc bus voltage to zero during a resonant period. The ARDCT circuit resonantly brings the dc bus voltage to zero in order to provide a zero-voltage switching opportunity for the inverter, then quickly rebounds the dc bus voltage back to the dc tank voltage after the inverter changes state. The auxiliary switching devices are turned on and off under zero-current conditions. The ARDCT circuit only absorbs ripples of the inverter dc bus current, thus having less current stress. In addition, since the ARDCT circuit is coupled in parallel with the dc power supply and the inverter for merely assisting soft-switching of the inverter without participating in real dc power transmission and power conversion, malfunction and failure of the tank circuit will not affect the functional operation of the inverter; thus a highly reliable converter system is expected.

  6. Effect of high energy electrons on H⁻ production and destruction in a high current DC negative ion source for cyclotron.

    Science.gov (United States)

    Onai, M; Etoh, H; Aoki, Y; Shibata, T; Mattei, S; Fujita, S; Hatayama, A; Lettry, J

    2016-02-01

    Recently, a filament driven multi-cusp negative ion source has been developed for proton cyclotrons in medical applications. In this study, numerical modeling of the filament arc-discharge source plasma has been done with kinetic modeling of electrons in the ion source plasmas by the multi-cusp arc-discharge code and zero dimensional rate equations for hydrogen molecules and negative ions. In this paper, main focus is placed on the effects of the arc-discharge power on the electron energy distribution function and the resultant H(-) production. The modelling results reasonably explains the dependence of the H(-) extraction current on the arc-discharge power in the experiments.

  7. Influence of an External DC Electric Current on Plasma Cleaning Rate: an Application on the Enlarged Plasma-Surface Theory

    International Nuclear Information System (INIS)

    Xaplanteris, Constantine L.; Filippaki, Eleni D.

    2013-01-01

    During the last decades many researchers have been occupied with other plasma applications apart from the big challenge which the thermonuclear fusion poses. Many experiments have been carried out on the plasma behavior in contact with a solid surface; when the surface material consists of chemical compounds (e.g. oxides of metals), then the plasma chemistry takes place. The present paper contains the final experimental and theoretical work of Plasma Laboratory at “Demokritos , which consists of an elaboration of plasma sheath parameters adapted to experimental conditions, a suitable choice of plasma gases (either H 2 or N 2 ), and an electric potential current enforcement on objects. Additionally, a brief theory is given to explain the results, with a short reference to both boundary phenomena in thermonuclear reactors and low pressure plasma of glow discharges, so as to reveal the similarities and differences of these two cases. An extensive examination of the treated objects by X-ray diffraction method (XRD) gives results in agreement with the theoretical predictions. Using this improvement on plasma restoration system, (a combination of electric current on metallic object into suitable plasma), it is shown that better results can be achieved on the cleaning and conservation of archaeological objects. (plasma technology)

  8. Design of six pulse bridge multiplication converter model for current harmonic elimination of three phase ac-dc converter

    International Nuclear Information System (INIS)

    Soomro, M.A.; Helepoto, I.A.

    2014-01-01

    The recent development of semiconductor technology and wide spread use of power electronic devices in power system have open the era of the power system harmonics due to increasing penetration of non-linear loads. Harmonics are widely admitted as most important issues of power quality which must be eliminated to maintain power system reliability. The tolerable THD (Total Harmonic Distortion) values must be bounded in well-defined limits recognized by IEEE-519 standard. In this work, in order to eliminate the current harmonics produced by non-linear loads, six pulse multiplication converter technique in conjunction with STSSHPE (Single Tuned Shunt Harmonic Passive Filter) is proposed. The proposed model has the capacity of harmonic cancellation of the dominant 3rd order harmonics. Besides that, the 5th and 7th order harmonics are also reduced to a diminishing level. The hardware model has been experimentally tested by PQA (Power Quality Analyzer) and simulation model is designed using MATLAB software. The acquired results have been measured by considering THD values in terms of current and voltage. Furthermore, they have been compared against IEEE-519 performance standards. The prosed model, successfully bounds the total harmonic distortion under defined limits by IEEE-519 standard. (author)

  9. The performance of the DC motor by the PID controlling PWM DC-DC boost converter

    OpenAIRE

    Can, Erol; Sayan, Hasan Hüseyin

    2017-01-01

    This paper presents the PID controlling direct current (DC) to the direct current boost converter feds DC motor which has a 3.68 kW and 240 V of DC voltage input on its characteristics. What is first formed is the boost converter mathematical model at the design stage. Secondly, a mathematical model of the DC motor is created so that the boost converter with the machine can be established and modeled at the Matlab Simulink. The PID controller is considered for arranging a pulse width modulati...

  10. GaAsP/InGaP HBTs grown epitaxially on Si substrates: Effect of dislocation density on DC current gain

    Science.gov (United States)

    Heidelberger, Christopher; Fitzgerald, Eugene A.

    2018-04-01

    Heterojunction bipolar transistors (HBTs) with GaAs0.825P0.175 bases and collectors and In0.40Ga0.60P emitters were integrated monolithically onto Si substrates. The HBT structures were grown epitaxially on Si via metalorganic chemical vapor deposition, using SiGe compositionally graded buffers to accommodate the lattice mismatch while maintaining threading dislocation density at an acceptable level (˜3 × 106 cm-2). GaAs0.825P0.175 is used as an active material instead of GaAs because of its higher bandgap (increased breakdown voltage) and closer lattice constant to Si. Misfit dislocation density in the active device layers, measured by electron-beam-induced current, was reduced by making iterative changes to the epitaxial structure. This optimized process culminated in a GaAs0.825P0.175/In0.40Ga0.60P HBT grown on Si with a DC current gain of 156. By considering the various GaAsP/InGaP HBTs grown on Si substrates alongside several control devices grown on GaAs substrates, a wide range of threading dislocation densities and misfit dislocation densities in the active layers could be correlated with HBT current gain. The effect of threading dislocations on current gain was moderated by the reduction in minority carrier lifetime in the base region, in agreement with existing models for GaAs light-emitting diodes and photovoltaic cells. Current gain was shown to be extremely sensitive to misfit dislocations in the active layers of the HBT—much more sensitive than to threading dislocations. We develop a model for this relationship where increased base current is mediated by Fermi level pinning near misfit dislocations.

  11. A Plasma Lens for Magnetron Sputtering

    International Nuclear Information System (INIS)

    Anders, Andre; Brown, Jeff

    2010-01-01

    A plasma lens, consisting of a solenoid and potential-defining ring electrodes, has been placed between a magnetron and substrates to be coated. Photography reveals qualitative information on excitation, ionization, and the transport of plasma to the substrate.

  12. Effect of thickness on surface morphology, optical and humidity sensing properties of RF magnetron sputtered CCTO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Ahmadipour, Mohsen [Structural Materials Niche Area, School of Materials and Mineral Resources Engineering, Universiti Sains Malaysia, Engineering Campus, 14300 Nibong Tebal, Penang (Malaysia); Ain, Mohd Fadzil [School of Electrical and Electronic Engineering, Universiti Sains Malaysia, Engineering Campus, 14300 Nibong Tebal, Penang (Malaysia); Ahmad, Zainal Arifin, E-mail: srzainal@usm.my [Structural Materials Niche Area, School of Materials and Mineral Resources Engineering, Universiti Sains Malaysia, Engineering Campus, 14300 Nibong Tebal, Penang (Malaysia)

    2016-11-01

    Highlights: • CCTO thin film was synthesized by RF magnetron sputtering successfully. • Increase in thickness lead to increase in grain size and decrease in band gap. • Short response times and recovery times of lead CCTO humidity sensor. • Sensor could detect humidity range (30–90%). - Abstract: In this study, calcium copper titanate (CCTO) thin films were deposited on ITO substrates successfully by radio frequency (RF) magnetron sputtering method in argon atmosphere. The CCTO thin films present a polycrystalline, uniform and porous structure. The surface morphology, optical and humidity sensing properties of the synthesized CCTO thin films have been studied by X-ray diffraction (XRD), atomic force microscopy (AFM), field emission scanning electron microscopy (FESEM), energy-dispersive X-ray spectroscopy (EDX), UV–vis spectrophotometer and current-voltage (I–V) analysis. XRD and AFM confirmed that the intensity of peaks and pore size of CCTO thin films were enhanced by increasing the thin films. Tauc plot method was adopted to estimate the optical band gaps. The surface structure and energy band gaps of the deposited films were affected by film thickness. Energy band gap of the layers were 3.76 eV, 3.68 eV and 3.5 eV for 200 nm, 400 nm, and 600 nm CCTO thin films layer, respectively. The humidity sensing properties were measured by using direct current (DC) analysis method. The response times were 12 s, 22 s, and 35 s while the recovery times were 500 s, 600 s, and 650 s for 200 nm, 400 nm, and 600 nm CCTO thin films, respectively at humidity range of 30–90% relative humidity (RH).

  13. Quench behavior of Sr{sub 0.6}K{sub 0.4}Fe{sub 2}As{sub 2}/Ag tapes with AC and DC transport currents at different temperature

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Qi [Key Laboratory of Applied Superconductivity, Chinese Academy of Sciences, Beijing 100190 (China); Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190 (China); University of the Chinese Academy of Sciences, Beijing 100049 (China); Institute of Science, Information Engineering University, Zhengzhou 450001 (China); Zhang, Guomin, E-mail: gmzhang@mail.iee.ac.cn [Key Laboratory of Applied Superconductivity, Chinese Academy of Sciences, Beijing 100190 (China); Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190 (China); Yang, Hua [Institute of Science, Information Engineering University, Zhengzhou 450001 (China); Li, Zhenming; Liu, Wei [China Electric Power Research Institute, Beijing 100192 (China); Jing, Liwei [Key Laboratory of Applied Superconductivity, Chinese Academy of Sciences, Beijing 100190 (China); Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190 (China); Yu, Hui; Liu, Guole [Key Laboratory of Applied Superconductivity, Chinese Academy of Sciences, Beijing 100190 (China); Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190 (China); University of the Chinese Academy of Sciences, Beijing 100049 (China)

    2016-09-15

    Highlights: • Quench behavior of Sr{sub 0.6}K{sub 0.4}Fe{sub 2}As{sub 2}/ Ag tape with AC transport current was reported for the first time. • The measurement are performed as a function of different temperature (20 K–30 K), transport current (AC and DC) and operating frequency (50 Hz–250 Hz). • The study is concentrated on the research of quench development, and the discussions of NZPV and MQE values. - Abstract: In applications, superconducting wires may carry AC or DC transport current. Thus, it is important to understand the behavior of normal zone propagation in conductors and magnets under different current conditions in order to develop an effective quench protection system. In this paper, quench behavior of Ag sheathed Sr{sub 0.6}K{sub 0.4}Fe{sub 2}As{sub 2} (Sr-122 in the family of iron-based superconductor) tapes with AC and DC transport current is reported. The measurements are performed as a function of different temperature (20 K–30 K), varying transport current and operating frequency (50 Hz–250 Hz). The focus of the research is the minimum quench energy (MQE), the normal zone propagation velocity (NZPV) and the comparison of the related results with AC and DC transport current.

  14. DC Distribution Systems and Microgrids

    DEFF Research Database (Denmark)

    Dragicevic, Tomislav; Anvari-Moghaddam, Amjad; Quintero, Juan Carlos Vasquez

    2017-01-01

    summarized. Due to its attractive characteristics in terms of compliance with modern generation, storage and electronic load technologies, high reliability and current carrying capacity, as well as simple control, DC systems are already an indispensable part of power systems. Moreover, the existing......A qualitative overview of different hardware topologies and control systems for DC MGs has been presented in this chapter. Some challenges and design considerations of DC protections systems have also been discussed. Finally, applications of DC MGs in emerging smart grid applications have been...... challenges such as protection issues will be effectively resolved in the near future due to fast progress of semiconductor technology which is a key enabler cheap and reliable future DC solid-state protection systems. Therefore, it is the view of the author that more and more DC systems will appear...

  15. Study of static properties of magnetron-type space charges; Etude des proprietes statiques des charges d'espace du type magnetron

    Energy Technology Data Exchange (ETDEWEB)

    Delcroix, Jean-Loup

    1953-05-30

    This research thesis reports an in-depth analysis of physical properties of static regimes to address the issue of space charges. This theoretical study of the Hull magnetron is followed by the description of experiments on the Hull magnetron which highlight transitions between the different regimes. Then, another theoretical approach aims at generalising the magnetron theory, based on other types of magnetron theory (general equations of magnetron-type space charges, inverted Hull magnetron theory, circular field magnetron theory)

  16. DC to DC power converters and methods of controlling the same

    Science.gov (United States)

    Steigerwald, Robert Louis; Elasser, Ahmed; Sabate, Juan Antonio; Todorovic, Maja Harfman; Agamy, Mohammed

    2012-12-11

    A power generation system configured to provide direct current (DC) power to a DC link is described. The system includes a first power generation unit configured to output DC power. The system also includes a first DC to DC converter comprising an input section and an output section. The output section of the first DC to DC converter is coupled in series with the first power generation unit. The first DC to DC converter is configured to process a first portion of the DC power output by the first power generation unit and to provide an unprocessed second portion of the DC power output of the first power generation unit to the output section.

  17. Active pre-filters for dc/dc Boost regulators

    Directory of Open Access Journals (Sweden)

    Carlos Andrés Ramos-Paja

    2014-05-01

    Full Text Available This paper proposes an active pre-filter to mitigate the current harmonics generated by classical dc/dc Boost regulators, which generate current ripples proportional to the duty cycle. Therefore, high output voltage conditions, i.e., high voltage conversion ratios, produce high current harmonics that must be filtered to avoid damage or source losses. Traditionally, these current components are filtered using electrolytic capacitors, which introduce reliability problems because of their high failure rate. The solution introduced in this paper instead uses a dc/dc converter based on the parallel connection of the Boost canonical cells to filter the current ripples generated by the Boost regulator, improving the system reliability. This solution provides the additional benefits of improving the overall efficiency and the voltage conversion ratio. Finally, the solution is validated with simulations and experimental results.

  18. Magnetron sputtering system with an annual discharge zone and two cathode modules

    International Nuclear Information System (INIS)

    Savich, V. A.; Yasyunas, A. A.; Kovrigo, V. M.; Kotov, D. A.; Shiripov, V. Ya.

    2013-01-01

    In this article, general discharge characteristics of a cylindrical magnetron sputtering system with an annual sputtering zone and a high target usage coefficient designed for transparent conducting coatings are shown. Two coupled DC-cathodes are used to improve coating uniformity. Radial sputtered material fluxes are being created. The engineered magnetic system is extremely balanced (G-factor is much higher than 2) and thus provides maximal effective operating power higher than 6 kW. The effectiveness of a magnetic trap results in a fast work cycle (less than 1.5 min) and a high target material usage coefficient (higher than 40%). A multipole magnetic field with null magnetic flux density zones lower target’s surface is being created. There is an influence between cathode modules despite mutual magnetic isolation, so magnetic conductors-shunts are used to weaken it. The magnetron can be used to sputter both metals and conducting ceramics (including ITO). (authors)

  19. Microstructural evaluation of NiTi-based films deposited by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Crăciunescu, Corneliu M., E-mail: corneliu.craciunescu@upt.ro; Mitelea, Ion, E-mail: corneliu.craciunescu@upt.ro; Budău, Victor, E-mail: corneliu.craciunescu@upt.ro [Department of Materials and Manufacturing Engineering, Politehnica University of Timisoara (Romania); Ercuţa, Aurel [Department of Materials and Manufacturing Engineering, Politehnica University of Timisoara and Department of Physics, West University Timisoara (Romania)

    2014-11-24

    Shape memory alloy films belonging to the NiTi-based systems were deposited on heated and unheated substrates, by magnetron sputtering in a custom made system, and their structure and composition was analyzed using electron microscopy. Several substrates were used for the depositions: glass, Cu-Zn-Al, Cu-Al-Ni and Ti-NiCu shape memory alloy ribbons and kapton. The composition of the Ti-Ni-Cu films showed limited differences, compared to the one of the target and the microstructure for the DC magnetron sputtering revealed crystallized structure with features determined on peel off samples from a Si wafer. Both inter and transcrystalline fractures were observed and related to the interfacial stress developed on cooling from deposition temperature.

  20. A Unidirectional DC-DC Autotransformer for DC Grid Application

    Directory of Open Access Journals (Sweden)

    Meng Zhou

    2018-03-01

    Full Text Available Conventional unidirectional DC-DC converters for DC grid application employ DC-AC-DC two-stage conversion technology and suffer from high converter cost and power loss. To solve these issues, a unidirectional step-up DC-DC autotransformer (UUDAT and a unidirectional step-down DC-DC autotransformer (DUDAT are studied. The UUDAT and DUDAT are composed of a series connection of diode bridges and voltage source converters. Topologies of UUDAT and DUDAT are detailed. The harmonic and un-controllability issues are discussed. Control and possible application scenarios for UUDAT and DUDAT are depicted. DC fault isolation mechanism and the methods of dimensioning the voltage and power ratings of the components in UUDAT and DUDAT are studied. Extensive simulations on power system level and experiments on a UUDAT and DUDAT prototype verified their technical feasibility.

  1. Characteristics of W Doped Nanocrystalline Carbon Films Prepared by Unbalanced Magnetron Sputtering.

    Science.gov (United States)

    Park, Yong Seob; Park, Chul Min; Kim, Nam-Hoon; Kim, Jae-Moon

    2016-05-01

    Nanocrystalline tungsten doped carbon (WC) films were prepared by unbalanced magnetron sputtering. Tungsten was used as the doping material in carbon thin films with the aim of application as a contact strip in an electric railway. The structural, physical, and electrical properties of the fabricated WC films with various DC bias voltages were investigated. The films had a uniform and smooth surface. Hardness and frication characteristics of the films were improved, and the resistivity and sheet resistance decreased with increasing negative DC bias voltage. These results are associated with the nanocrystalline WC phase and sp(2) clusters in carbon networks increased by ion bombardment enhanced with increasing DC bias voltage. Consequently, the increase of sp(2) clusters containing WC nanocrystalline in the carbon films is attributed to the improvement in the physical and electrical properties.

  2. Onset of chaos and dc current-voltage characteristics of rf-driven Josephson junctions in the low-frequency regime

    International Nuclear Information System (INIS)

    Chi, C.C.; Vanneste, C.

    1990-01-01

    A comprehensive picture of the dc current-voltage (I-V) characteristics of rf-driven Josephson junctions in the low-frequency regime is presented. The boundary of the low-frequency regime is roughly defined by the junction characteristic frequency for overdamped junctions, and by the inverse of the junction damping time for underdamped junctions. An adiabatic model valid for the low-frequency regime is used to describe the overall shapes of the I-V curves, which is in good agreement with both the numerical simulations and the experimental results. For underdamped junctions, the Shapiro steps are the prominent features on the I-V curves if the rf frequency is sufficiently below the boundary. As the rf frequency is increased towards the boundary, large negatively-going tails on top of the Shapiro steps are observed both experimentally and numerically. Numerical simulations using the resistively- and capacitively-shunted-junction model (RCSJ model) reveal that the negatively-going tail is a signature of the low-frequency boundary of the junction chaotic regime. With use of the adiabatic model and the existence of plasma oscillations for underdamped junctions, the onset of chaos and its effect on the Shapiro steps can be fully explained. The high-frequency limit of the adiabatic model and the chaotic behavior of the Josephson junctions beyond the low-frequency regime are also briefly discussed

  3. Effect of the degree of high power impulse magnetron sputtering utilisation on the structure and properties of TiN films

    Energy Technology Data Exchange (ETDEWEB)

    Hovsepian, Papken Eh.; Sugumaran, Arunprabhu A., E-mail: Arunprabhu.ArunachalamSugumaran@student.shu.ac.uk; Purandare, Yashodhan; Loch, Daniel A.L.; Ehiasarian, Arutiun P.

    2014-07-01

    TiN films were deposited using high power impulse magnetron sputtering (HIPIMS) enabled four cathode industrial size coating system equipped with HIPIMS power supplies. The standard version of this system allows control over the ion bombardment during coating growth by varying the strength of the electromagnetic field of the unbalancing coils and bias voltage applied to the substrate. The coatings were produced in different coating growth conditions achieved in combined HIPIMS — direct current (dc) unbalanced magnetron sputtering (HIPIMS/UBM) processes where HIPIMS was used as an additional tool to manipulate the ionisation degree in the plasma. Four cathode combinations were explored with increasing contribution of HIPIMS namely 4UBM (pure UBM), 1HIPIMS + 3UBM, 2HIPIMS + 2UBM and 2HIPIMS (pure HIPIMS) to deposit TiN coatings. Optical emission spectroscopy (OES) measurements were carried out to examine the plasma generated by the various combinations of HIPIMS and UBM cathodes. The micro-structural study was done by scanning electron microscopy (SEM). X-ray diffraction (XRD) technique was used to calculate the residual stress and texture parameter. It has been revealed that the residual stress can be controlled in a wide range from − 0.22 GPa to − 11.67 GPa by intelligent selection of the degree of HIPIMS utilisation, strength of the electromagnetic field of the unbalancing coils and the bias voltage applied to the substrate while maintaining the stoichiometry of the coatings. The effect of the degree of HIPIMS utilisation on the microstructure, texture and residual stress is discussed. Combining HIPIMS with dc-UBM sputtering is also seen as an effective tool for improving the productivity of the deposition process. - Highlights: • High {Ti"1"+} in the plasma with increasing number of HIPIMS sources • Residual stress can be manipulated in a wide range. • Texture can be altered. • The 2HIPIMS + 2UBM combination appears to be the most advantageous.

  4. Quasi-Z-Source Half-Bridge DC-DC Converter for Photovoltaic Applications

    OpenAIRE

    Vinnikov, D; Chub, A; Husev, O; Zaķis, J

    2015-01-01

    This paper presents a novel quasi-Z-source halfbridge galvanically isolated DC-DC converter intended for the photovoltaic applications. The topology could be envisioned as an alternative to the boost half-bridge DC-DC converter but the benefit of its symmetric structure reduces the threat of transformer saturation due to the dc flux. The proposed converter features the continuous input current and could be used either with one or two input voltage sources.

  5. Stability of Brillouin flow in planar, conventional, and inverted magnetrons

    International Nuclear Information System (INIS)

    Simon, D. H.; Lau, Y. Y.; Greening, G.; Wong, P.; Gilgenbach, R. M.; Hoff, B. W.

    2015-01-01

    The Brillouin flow is the prevalent flow in crossed-field devices. We systematically study its stability in the conventional, planar, and inverted magnetron geometry. To investigate the intrinsic negative mass effect in Brillouin flow, we consider electrostatic modes in a nonrelativistic, smooth bore magnetron. We found that the Brillouin flow in the inverted magnetron is more unstable than that in a planar magnetron, which in turn is more unstable than that in the conventional magnetron. Thus, oscillations in the inverted magnetron may startup faster than the conventional magnetron. This result is consistent with simulations, and with the negative mass property in the inverted magnetron configuration. Inclusion of relativistic effects and electromagnetic effects does not qualitatively change these conclusions

  6. CEERI-CAT joint venture for development of accelerator magnetrons

    International Nuclear Information System (INIS)

    Prasad, Sharda; Kaushik, S.C.; Mahesh Kumar; Chaudhary, P.; Shrivastava, Purushottam; Wanmode, Y.; Hannurkar, P.R.

    2003-01-01

    LINAC and Microtron systems for electron acceleration up to few tens of MeV, requires pulsed RF sources such as magnetron and klystron in S-Band frequency range with peak power in the range of few MW. The major emphasis under this program was to develop critical technologies involved in the development of 2 MW magnetron. This paper discusses the development of 2 MW magnetron along with critical technologies involved and test facilities developed by CAT for testing of this magnetron

  7. Analysis of peer-to-peer locking of magnetrons

    International Nuclear Information System (INIS)

    Pengvanich, P.; Lau, Y. Y.; Cruz, E.; Gilgenbach, R. M.; Hoff, B.; Luginsland, J. W.

    2008-01-01

    The condition for mutual, or peer-to-peer, locking of two magnetrons is derived. This condition reduces to Adler's classical phase-locking condition in the limit where one magnetron becomes the ''master'' and the other becomes the ''slave.'' The formulation is extended to the peer-to-peer locking of N magnetrons, under the assumption that the electromagnetic coupling among the N magnetrons is modeled by an N-port network.

  8. High power impulse magnetron sputtering and its applications

    Science.gov (United States)

    Yan, YUAN; Lizhen, YANG; Zhongwei, LIU; Qiang, CHEN

    2018-04-01

    High power impulse magnetron sputtering (HiPIMS) has attracted a great deal of attention because the sputtered material is highly ionized during the coating process, which has been demonstrated to be advantageous for better quality coating. Therefore, the mechanism of the HiPIMS technique has recently been investigated. In this paper, the current knowledge of HiPIMS is described. We focus on the mechanical properties of the deposited thin film in the latest applications, including hard coatings, adhesion enhancement, tribological performance, and corrosion protection layers. A description of the electrical, optical, photocatalytic, and functional coating applications are presented. The prospects for HiPIMS are also discussed in this work.

  9. Arc-discharge and magnetron sputtering combined equipment for nanocomposite coating deposition

    International Nuclear Information System (INIS)

    Koval, N.N.; Borisov, D.P.; Savostikov, V.M.

    2005-01-01

    It is known that characteristics of nanocomposite coatings produced by reactive magnetron sputtering undergo an essential influence on the following parameters such as original component composition of targets being sputtered, as well as abundance ratio of such components in the coatings deposited, relative content of inert and reactionary gases in a gas mixture used and a value of operating pressure in a chamber, substrate temperature, and a value of substrate bias potential, determining energy of ionized atoms, ionized atoms flow density, i.e. ion current density on a substrate. The multifactor character of production process of nanocomposite coatings with certain physical and mechanical properties demands a purposeful and complex control on all above-mentioned parameters. To solve such a problem, an arc-discharge and magnetron sputtering combined equipment including a vacuum chamber of approximately ∼ 0.5 m 3 with a built-in low-pressure plasma generator made on the basis of non-self-sustained discharge with a thermal cathode and a planar magnetron combined with two sputtered targets has been created. Construction of such a complex set-up provides both an autonomous mode of operation and simultaneous operation of an arc plasma generator and magnetron sputtering system. Magnetron sputtering of either one or two targets simultaneously is provided as well. An arc plasma generator enables ions current density control on a substrate in a wide range due to discharge current varying from 1 to 100 A. Energy of ions is also being controlled in a wide range by a negative bias potential from 0 to 1000 V applied to a substrate. The wide control range of gas plasma density of a arc discharge of approximately 10 9 -10 11 cm -3 and high uniformity of its distribution over the total volume of an operating chamber (about 15% error with regard to the mean value) provides a purposeful and simultaneous control either of magnetron discharge characteristics (operating pressure of

  10. Controlled formation of anatase and rutile TiO2 thin films by reactive magnetron sputtering

    OpenAIRE

    Rafieian, Damon; Ogieglo, Wojciech; Savenije, T.J.; Lammertink, Rob G H

    2015-01-01

    We discuss the formation of TiO2 thin films via DC reactive magnetron sputtering. The oxygen concentration during sputtering proved to be a crucial parameter with respect to the final film structure and properties. The initial deposition provided amorphous films that crystallise upon annealing to anatase or rutile, depending on the initial sputtering conditions. Substoichiometric films (TiOx), obtained by sputtering at relatively low oxygen concentration, formed rutile upon annealing in air, ...

  11. Step-Up DC-DC converters

    DEFF Research Database (Denmark)

    Forouzesh, Mojtaba; Siwakoti, Yam P.; Gorji, Saman A.

    2017-01-01

    on the general law and framework of the development of next-generation step-up dc-dc converters, this paper aims to comprehensively review and classify various step-up dc-dc converters based on their characteristics and voltage-boosting techniques. In addition, the advantages and disadvantages of these voltage...

  12. Improved Magnetron Stability and Reduced Noise in Efficient Transmitters for Superconducting Accelerators

    Energy Technology Data Exchange (ETDEWEB)

    Kazakevich, G. [MUONS Inc., Batavia; Johnson, R. [MUONS Inc., Batavia; Lebedev, V. [Fermilab; Yakovlev, V. [Fermilab

    2018-04-01

    State of the art high-current superconducting accelerators require efficient RF sources with a fast dynamic phase and power control. This allows for compensation of the phase and amplitude deviations of the accelerating voltage in the Superconducting RF (SRF) cavities caused by microphonics, etc. Efficient magnetron transmitters with fast phase and power control are attractive RF sources for this application. They are more cost effective than traditional RF sources such as klystrons, IOTs and solid-state amplifiers used with large scale accelerator projects. However, unlike traditional RF sources, controlled magnetrons operate as forced oscillators. Study of the impact of the controlling signal on magnetron stability, noise and efficiency is therefore important. This paper discusses experiments with 2.45 GHz, 1 kW tubes and verifies our analytical model which is based on the charge drift approximation.

  13. Computer simulation of sputtering of graphite target in magnetron sputtering device with two zones of erosion

    Directory of Open Access Journals (Sweden)

    Bogdanov R.V.

    2015-03-01

    Full Text Available A computer simulation program for discharge in a magnetron sputtering device with two erosion zones was developed. Basic laws of the graphite target sputtering process and transport of sputtered material to the substrate were taken into account in the Monte Carlo code. The results of computer simulation for radial distributions of density and energy flux of carbon atoms on the substrate (at different values of discharge current and pressure of the working gas confirmed the possibility of obtaining qualitative homogeneous films using this magnetron sputtering device. Also the discharge modes were determined for this magnetron sputtering device, in which it was possible to obtain such energy and density of carbon atoms fluxes, which were suitable for deposition of carbon films containing carbon nanotubes and other nanoparticles.

  14. Analysis of conditions for magnetron discharge initiation at vacuum camera testing

    International Nuclear Information System (INIS)

    Tzeneva, Raina; Dineff, Peter; Darjanova, Denitza

    2002-01-01

    Models of electric field distribution for two typical cases of vacuum camera internal pressure control are investigated. New relations between the maximum magnetron discharge current value I max and the maximum electric field strength radial component value E τ max are established. (Author)

  15. Highly -oriented growth of polycrystalline silicon films on glass by pulsed magnetron sputtering

    International Nuclear Information System (INIS)

    Reinig, P.; Selle, B.; Fenske, F.; Fuhs, W.; Alex, V.; Birkholz, M.

    2002-01-01

    Nominally undoped polycrystalline silicon (poly-Si) thin films were deposited on glass at 450 deg. C at high deposition rate (>100 nm/min) by pulsed dc magnetron sputtering. The pulse frequency was found to have a significant influence on the preferred grain orientation. The x-ray diffraction pattern exhibits a strong enhancement of the (400) reflex with increasing pulse frequency. The quantitative evaluation reveals that over 90% of the grains are oriented. The observed change in preferred grain orientation in poly-Si films at low temperatures is associated with concurrent ion bombardment of the growing film

  16. The Development and Application of the Magnetron,

    Science.gov (United States)

    1982-03-31

    of *medicine. The power of the magnetron used is from several tens of watts to several hundred watts. Microwave physiotherapy has been used in...clinical practice for the fast cure of arthritis , rheumatism and the subsidence of swelling. Therapeutic results have been excellent. In recent years

  17. Combined optical emission and resonant absorption diagnostics of an Ar-O{sub 2}-Ce-reactive magnetron sputtering discharge

    Energy Technology Data Exchange (ETDEWEB)

    El Mel, A.A. [Chimie des Interactions Plasma-Surface (ChIPS), Research Institute for Materials Science and Engineering, Université de Mons, Place du Parc 23, Mons B-7000 (Belgium); Institut des Matériaux Jean Rouxel, Université de Nantes, CNRS, 2 rue de la Houssinière B.P. 32229, Nantes Cedex 3 44322 (France); Ershov, S. [Chimie des Interactions Plasma-Surface (ChIPS), Research Institute for Materials Science and Engineering, Université de Mons, Place du Parc 23, Mons B-7000 (Belgium); Britun, N., E-mail: nikolay.britun@umons.ac.be [Chimie des Interactions Plasma-Surface (ChIPS), Research Institute for Materials Science and Engineering, Université de Mons, Place du Parc 23, Mons B-7000 (Belgium); Ricard, A. [Université de Toulouse, UPS, INPT, LAPLACE (Laboratoire Plasma et Conversion d' Energie), 118 route de Narbonne, Toulouse Cedex 9 F-31062 (France); Konstantinidis, S. [Chimie des Interactions Plasma-Surface (ChIPS), Research Institute for Materials Science and Engineering, Université de Mons, Place du Parc 23, Mons B-7000 (Belgium); Snyders, R. [Chimie des Interactions Plasma-Surface (ChIPS), Research Institute for Materials Science and Engineering, Université de Mons, Place du Parc 23, Mons B-7000 (Belgium); Materia Nova Research Center, Parc Initialis, Avenue Copernic 1, Mons B-7000 (Belgium)

    2015-01-01

    We report the results on combined optical characterization of Ar-O{sub 2}-Ce magnetron sputtering discharges by optical emission and resonant absorption spectroscopy. In this study, a DC magnetron sputtering system equipped with a movable planar magnetron source with a Ce target is used. The intensities of Ar, O, and Ce emission lines, as well as the absolute densities of Ar metastable and Ce ground state atoms are analyzed as a function of the distance from the magnetron target, applied DC power, O{sub 2} content, etc. The absolute number density of the Ar{sup m} is found to decrease exponentially as a function of the target-to-substrate distance. The rate of this decrease is dependent on the sputtering regime, which should be due to the different collisional quenching rates of Ar{sup m} by O{sub 2} molecules at different oxygen contents. Quantitatively, the absolute number density of Ar{sup m} is found to be equal to ≈ 3 × 10{sup 8} cm{sup −3} in the metallic, and ≈ 5 × 10{sup 7} cm{sup −3} in the oxidized regime of sputtering, whereas Ce ground state densities at the similar conditions are found to be few times lower. The absolute densities of species are consistent with the corresponding deposition rates, which decrease sharply during the transition from metallic to poisoned sputtering regime. - Highlights: • Optical emission and resonant absorption spectroscopy are employed to study Ar-O{sub 2}-Ce magnetron sputtering discharges. • The density of argon metastables is found to decrease exponentially when increasing the target-to-substrate distance. • The collision-quenching rates of Ar{sup m} by O{sub 2} molecules at different oxygen contents is demonstrated. • The deposition rates of cerium and cerium oxide thin films decrease sharply during the transition from the metallic to the poisoned sputtering regime.

  18. Plasma properties of RF magnetron sputtering system using Zn target

    Energy Technology Data Exchange (ETDEWEB)

    Nafarizal, N.; Andreas Albert, A. R.; Sharifah Amirah, A. S.; Salwa, O.; Riyaz Ahmad, M. A. [Microelectronic and Nanotechnology - Shamsuddin Research Centre (MiNT-SRC), Faculty of Electrical and Electronic Engineering, Universiti Tun Hussein Onn Malaysia 86400 Parit Raja, Batu Pahat, Johor (Malaysia)

    2012-06-29

    In the present work, we investigate the fundamental properties of magnetron sputtering plasma using Zn target and its deposited Zn thin film. The magnetron sputtering plasma was produced using radio frequency (RF) power supply and Argon (Ar) as ambient gas. A Langmuir probe was used to collect the current from the plasma and from the current intensity, we calculate the electron density and electron temperature. The properties of Zn sputtering plasma at various discharge conditions were studied. At the RF power ranging from 20 to 100 W and gas pressure 5 mTorr, we found that the electron temperature was almost unchanged between 2-2.5 eV. On the other hand, the electron temperature increased drastically from 6 Multiplication-Sign 10{sup 9} to 1 Multiplication-Sign 10{sup 10}cm{sup -3} when the discharge gas pressure increased from 5 to 10 mTorr. The electron microscope images show that the grain size of Zn thin film increase when the discharge power is increased. This may be due to the enhancement of plasma density and sputtered Zn density.

  19. DC Microgrids—Part II

    DEFF Research Database (Denmark)

    Dragicevic, Tomislav; Lu, Xiaonan; Quintero, Juan Carlos Vasquez

    2016-01-01

    distribution applications such as traction, telecom, vehicular and distributed power systems can be classified under DC MG framework and ongoing development and expansion of the field is largely influenced by concepts used over there. This paper aims firstly to shed light on the practical design aspects of DC...... MG technology concerning typical power hardware topologies and their suitability for different emerging smart grid applications. Then, an overview of the state of the art in DC MG protection and grounding is provided. Owing to the fact that there is no zero current crossing, an arc that appears upon...

  20. Feasibility analysis of the application and positioning of DC HTS FCL in a DC microgrid through modeling and simulation using Simulink and SimPowerSystem

    International Nuclear Information System (INIS)

    Khan, U.A.; Shin, W.J.; Seong, J.K.; Oh, S.H.; Lee, S.H.; Lee, B.W.

    2011-01-01

    We modeled DC SFCL by use of SimPowerSystem blocks. We examine the DC fault current limitation in low voltage DC distribution networks. SFCL's affects at critical points were measured. SFCL installed at the substation rectifier branch resulted in abnormal increase of fault current. The strategic location of SFCL is the point of integration of the PV plant with the power grid. DC fault current limitation in DC distribution network is one of the critical issues which need to be taken care of before they can be practically implemented. High temperature superconductors could be efficiently installed to cope with the problem of DC fault currents. In this paper, a generalized DC high temperature superconducting fault current limiter (SFCL) is modeled by integrating Simulink and SimPowerSystem blocks. This model is designed for limiting DC fault currents in low voltage DC distribution networks. A DC microgrid having a low voltage DC distribution network, an integrated photovoltaic plant and domestic customer load is modeled. Transient analysis of the DC microgrid is performed by generating fault and measuring DC fault currents at critical points. The designed DC SFCL is placed at different strategic locations in DC microgrid and fault current limitation performance of DC SFCL in DC microgrid has been analyzed. Moreover, the affects of rapid impedance changing in the distribution network due to the fault followed by DC SFCL activation is investigated. Finally, the best suitable position and affects of DC SFCL in a DC microgrid along with suggestions for implementation have been proposed.

  1. Structure and giant magnetoresistance of carbon-based amorphous films prepared by magnetron sputtering

    International Nuclear Information System (INIS)

    Ma, L.; He, M.F.; Liu, Z.W.; Zeng, D.C.; Gu, Z.F.; Cheng, G.

    2014-01-01

    Pure amorphous carbon (a-C) and Co-doped Co x C 1−x films were prepared on n-Si(100) substrates by dc magnetron sputtering. In Co–C films, the nano-sized amorphous Co particles were homogeneously dispersed in the amorphous cross-linked carbon matrix. The structures of a-C and Co x C 1−x films were investigated by X-ray photoelectron spectroscopy and Raman spectroscopy. The results showed that the a-C films were diamond-like carbon (DLC) films. After doping cobalt into DLC film, the sp 3 -hybridized carbon content in DLC composite films almost had no change. The as-deposited Co x C 1−x granular films had larger value of magnetoresistance (MR) than the amorphous carbon film. A very high positive MR, up to 15.5% at magnetic field B = 0.8 T and x = 2.5 at.% was observed in a Co x C 1−x granular film with thickness of 80 nm at room temperature when the external magnetic field was perpendicular to the electric current and the film surface. With increase of the film thickness and Co-doped content, the MR decreased gradually. It remains a challenge to well explain the observed MR effect in the Co x C 1−x granular films. - Highlights: • The amorphous carbon films were diamond-like carbon films. • No carbide appearing, the Co–C composite films form a good metal/insulator system. • A high positive magnetoresistance, up to 15.5% at B = 0.8 T was observed in Co–C films

  2. Chemical and Morphological Characterization of Magnetron Sputtered at Different Bias Voltages Cr-Al-C Coatings

    Directory of Open Access Journals (Sweden)

    Aleksei Obrosov

    2017-02-01

    Full Text Available MAX phases (M = transition metal, A = A-group element, and X = C/N are of special interest because they possess a unique combination of the advantages of both metals and ceramics. Most attention is attracted to the ternary carbide Cr2AlC because of its excellent high-temperature oxidation, as well as hot corrosion resistance. Despite lots of publications, up to now the influence of bias voltage on the chemical bonding structure, surface morphology, and mechanical properties of the film is still not well understood. In the current study, Cr-Al-C films were deposited on silicon wafers (100 and Inconel 718 super alloy by dc magnetron sputtering with different substrate bias voltages and investigated using Scanning Electron Microscopy (SEM, X-ray Photoelectron Spectroscopy (XPS, X-ray Diffraction (XRD, Atomic Force Microscopy (AFM, and nanoindentation. Transmission Electron Microscopy (TEM was used to analyze the correlation between the growth of the films and the coating microstructure. The XPS results confirm the presence of Cr2AlC MAX phase due to a negative shift of 0.6–0.9 eV of the Al2p to pure aluminum carbide peak. The XRD results reveal the presence of Cr2AlC MAX Phase and carbide phases, as well as intermetallic AlCr2. The film thickness decreases from 8.95 to 6.98 µm with increasing bias voltage. The coatings deposited at 90 V exhibit the lowest roughness (33 nm and granular size (76 nm combined with the highest hardness (15.9 GPa. The ratio of Al carbide to carbide-like carbon state changes from 0.12 to 0.22 and correlates with the mechanical properties of the coatings. TEM confirms the columnar structure, with a nanocrystalline substructure, of the films.

  3. Structural and electrical properties of CuAlMo thin films prepared by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Birkett, Martin, E-mail: martin.birkett@northumbria.ac.uk; Penlington, Roger; Wan, Chaoying; Zoppi, Guillaume

    2013-07-01

    The structural and electrical properties of a low resistivity CuAlMo thin film resistor material were investigated. The thin films were grown on Al{sub 2}O{sub 3} and glass substrates by direct current (dc) magnetron sputtering. The key electrical properties of sheet resistance, temperature coefficient of resistance (TCR) and resistance stability were investigated as a function of sputtering pressure and post-deposition heat treatment time and temperature. A low sputtering pressure range of 0.13 to 0.40 Pa produced CuAlMo films with sheet resistance in the range 0.1 to 0.2 Ω/□ and resistance stability of 0.45 to 0.65% with a TCR of − 90 ppm/°C which could be shifted to zero following annealing in air at 425 °C. Films grown at higher sputtering pressures of 0.53 to 0.80 Pa had increased sheet resistance in the range 0.4 to 0.6 Ω/□ and inferior stability of 0.8 to 1.7% with a more negative TCR of − 110 to − 180 ppm/°C which could not be shifted to zero following annealing. The stability of the films grown at 0.13 and 0.40 Pa could be further improved to < 0.25% with heat treatment, due to the formation of a protective aluminium oxide layer. A minimum dwell time of 3 h at 425 °C was required to stabilise the films and set the electrical properties. - Highlights: • Thin films of copper–aluminium–molybdenum were sputtered on alumina substrates. • Film properties were investigated with variation in process conditions. • Low sputtering pressure gave improved electrical performance. • Post deposition annealing in air further improved electrical performance.

  4. Structural and electrical properties of CuAlMo thin films prepared by magnetron sputtering

    International Nuclear Information System (INIS)

    Birkett, Martin; Penlington, Roger; Wan, Chaoying; Zoppi, Guillaume

    2013-01-01

    The structural and electrical properties of a low resistivity CuAlMo thin film resistor material were investigated. The thin films were grown on Al 2 O 3 and glass substrates by direct current (dc) magnetron sputtering. The key electrical properties of sheet resistance, temperature coefficient of resistance (TCR) and resistance stability were investigated as a function of sputtering pressure and post-deposition heat treatment time and temperature. A low sputtering pressure range of 0.13 to 0.40 Pa produced CuAlMo films with sheet resistance in the range 0.1 to 0.2 Ω/□ and resistance stability of 0.45 to 0.65% with a TCR of − 90 ppm/°C which could be shifted to zero following annealing in air at 425 °C. Films grown at higher sputtering pressures of 0.53 to 0.80 Pa had increased sheet resistance in the range 0.4 to 0.6 Ω/□ and inferior stability of 0.8 to 1.7% with a more negative TCR of − 110 to − 180 ppm/°C which could not be shifted to zero following annealing. The stability of the films grown at 0.13 and 0.40 Pa could be further improved to < 0.25% with heat treatment, due to the formation of a protective aluminium oxide layer. A minimum dwell time of 3 h at 425 °C was required to stabilise the films and set the electrical properties. - Highlights: • Thin films of copper–aluminium–molybdenum were sputtered on alumina substrates. • Film properties were investigated with variation in process conditions. • Low sputtering pressure gave improved electrical performance. • Post deposition annealing in air further improved electrical performance

  5. Step-Up DC-DC converters

    DEFF Research Database (Denmark)

    Forouzesh, Mojtaba; Siwakoti, Yam P.; Gorji, Saman A.

    2017-01-01

    on the general law and framework of the development of next-generation step-up dc-dc converters, this paper aims to comprehensively review and classify various step-up dc-dc converters based on their characteristics and voltage-boosting techniques. In addition, the advantages and disadvantages of these voltage......DC-DC converters with voltage boost capability are widely used in a large number of power conversion applications, from fraction-of-volt to tens of thousands of volts at power levels from milliwatts to megawatts. The literature has reported on various voltage-boosting techniques, in which......-boosting techniques and associated converters are discussed in detail. Finally, broad applications of dc-dc converters are presented and summarized with comparative study of different voltage-boosting techniques....

  6. Elimination of output voltage oscillations in DC-DC converter using PWM with PI controller

    Directory of Open Access Journals (Sweden)

    Sreenivasappa Veeranna Bhupasandra

    2010-01-01

    Full Text Available In this paper the SIMULINK model of a PWM controlled DC-DC converter is modeled using switching function concept to control the speed of the DC motor. The presence of the voltage oscillation cycles due to higher switching frequency in the DC-DC converter is identified. The effect of these oscillations on the output voltage of the converter, Armature current, Developed torque and Speed of the DC motor is analyzed. In order to minimize the oscillation cycles the PI controller is proposed in the PWM controller.

  7. Chaos analysis and chaotic EMI suppression of DC-DC converters

    CERN Document Server

    Zhang, Bo

    2014-01-01

    Introduces chaos theory, its analytical methods and the means to apply chaos to the switching power supply design DC-DC converters are typical switching systems which have plenty of nonlinear behaviors, such as bifurcation and chaos. The nonlinear behaviors of DC-DC converters have been studied heavily over the past 20 years, yet researchers are still unsure of the practical application of bifurcations and chaos in switching converters. The electromagnetic interference (EMI), which resulted from the high rates of changes of voltage and current, has become a major design criterion in DC-DC co

  8. Triple voltage dc-to-dc converter and method

    Science.gov (United States)

    Su, Gui-Jia

    2008-08-05

    A circuit and method of providing three dc voltage buses and transforming power between a low voltage dc converter and a high voltage dc converter, by coupling a primary dc power circuit and a secondary dc power circuit through an isolation transformer; providing the gating signals to power semiconductor switches in the primary and secondary circuits to control power flow between the primary and secondary circuits and by controlling a phase shift between the primary voltage and the secondary voltage. The primary dc power circuit and the secondary dc power circuit each further comprising at least two tank capacitances arranged in series as a tank leg, at least two resonant switching devices arranged in series with each other and arranged in parallel with the tank leg, and at least one voltage source arranged in parallel with the tank leg and the resonant switching devices, said resonant switching devices including power semiconductor switches that are operated by gating signals. Additional embodiments having a center-tapped battery on the low voltage side and a plurality of modules on both the low voltage side and the high voltage side are also disclosed for the purpose of reducing ripple current and for reducing the size of the components.

  9. Recent operation of the FNAL magnetron H- ion source

    Science.gov (United States)

    Karns, P. R.; Bollinger, D. S.; Sosa, A.

    2017-08-01

    This paper will detail changes in the operational paradigm of the Fermi National Accelerator Laboratory (FNAL) magnetron H- ion source due to upgrades in the accelerator system. Prior to November of 2012 the H- ions for High Energy Physics (HEP) experiments were extracted at ˜18 keV vertically downward into a 90 degree bending magnet and accelerated through a Cockcroft-Walton accelerating column to 750 keV. Following the upgrade in the fall of 2012 the H- ions are now directly extracted from a magnetron at 35 keV and accelerated to 750 keV by a Radio Frequency Quadrupole (RFQ). This change in extraction energy as well as the orientation of the ion source required not only a redesign of the ion source, but an updated understanding of its operation at these new values. Discussed in detail are the changes to the ion source timing, arc discharge current, hydrogen gas pressure, and cesium delivery system that were needed to maintain consistent operation at >99% uptime for HEP, with an increased ion source lifetime of over 9 months.

  10. DC electric springs with DC/DC converters

    DEFF Research Database (Denmark)

    Wang, Qingsong; Cheng, Ming; Jiang, Yunlei

    2016-01-01

    The concept of DC electric spring (DCES) was recently proposed to solve the stability issue caused by integrating intermittent renewable energy sources (RESs) to DC microgrids. In this paper, a new topology of DCES is proposed based on DC/DC converters. The proposed DCES consists of a bi-directio......The concept of DC electric spring (DCES) was recently proposed to solve the stability issue caused by integrating intermittent renewable energy sources (RESs) to DC microgrids. In this paper, a new topology of DCES is proposed based on DC/DC converters. The proposed DCES consists of a bi...... and/or constant discharging for batteries is adopted and four operating modes are analyzed as charging-positive, charging-negative, discharging-positive and discharging-negative modes. An additional mechanism for fast charging or fast discharging is also designed to secure normal operation...... of batteries. With the proposed DCES, the power fluctuations due to intermittent RESs can be passed to non-critical loads (NCLs) and batteries while power on critical loads (CLs) is kept stable. This is possibly the first attempt to design a DCES with only DC/DC converters. The performances of the proposed...

  11. Light-weight DC to very high voltage DC converter

    Science.gov (United States)

    Druce, R.L.; Kirbie, H.C.; Newton, M.A.

    1998-06-30

    A DC-DC converter capable of generating outputs of 100 KV without a transformer comprises a silicon opening switch (SOS) diode connected to allow a charging current from a capacitor to flow into an inductor. When a specified amount of charge has flowed through the SOS diode, it opens up abruptly; and the consequential collapsing field of the inductor causes a voltage and current reversal that is steered into a load capacitor by an output diode. A switch across the series combination of the capacitor, inductor, and SOS diode closes to periodically reset the SOS diode by inducing a forward-biased current. 1 fig.

  12. Light-weight DC to very high voltage DC converter

    Energy Technology Data Exchange (ETDEWEB)

    Druce, Robert L. (Union City, CA); Kirbie, Hugh C. (Dublin, CA); Newton, Mark A. (Livermore, CA)

    1998-01-01

    A DC-DC converter capable of generating outputs of 100 KV without a transformer comprises a silicon opening switch (SOS) diode connected to allow a charging current from a capacitor to flow into an inductor. When a specified amount of charge has flowed through the SOS diode, it opens up abruptly; and the consequential collapsing field of the inductor causes a voltage and current reversal that is steered into a load capacitor by an output diode. A switch across the series combination of the capacitor, inductor, and SOS diode closes to periodically reset the SOS diode by inducing a forward-biased current.

  13. Structural and thermal properties of nanocrystalline CuO synthesized by reactive magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Verma, M. [Department of Chemistry, IIT Roorkee, Roorkee-247667, India and Nano Science Laboratory, Institute Instrumentation Centre, IIT Roorkee, Roorkee-247667 (India); Gupta, V. K. [Department of Chemistry, IIT Roorkee, Roorkee-247667 (India); Gautam, Y. K.; Dave, V.; Chandra, R. [Nano Science Laboratory, Institute Instrumentation Centre, IIT Roorkee, Roorkee-247667 (India)

    2014-01-28

    Recent research has shown immense application of metal oxides like CuO, MgO, CaO, Al{sub 2}O{sub 3}, etc. in different areas which includes chemical warfare agents, medical drugs, magnetic storage media and solar energy transformation. Among the metal oxides, CuO nanoparticles are of special interest because of their excellent gas sensing and catalytic properties. In this paper we report structural and thermal properties of CuO synthesized by reactive magnetron DC sputtering. The synthesized nanoparticles were characterized by X-ray diffractometer. The XRD result reveals that as DC power increased from 30W to 80W, size of the CuO nanoparticles increased. The same results have been verified through TEM analysis. Thermal properties of these particles were studied using thermogravimetry.

  14. Decentralized Interleaving of Paralleled Dc-Dc Buck Converters: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Johnson, Brian B [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Rodriguez, Miguel [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Sinha, Mohit [University of Minnesota; Dhople, Sairaj [University of Minnesota; Poon, Jason [University of California at Berkeley

    2017-09-01

    We present a decentralized control strategy that yields switch interleaving among parallel connected dc-dc buck converters without communication. The proposed method is based on the digital implementation of the dynamics of a nonlinear oscillator circuit as the controller. Each controller is fully decentralized, i.e., it only requires the locally measured output current to synthesize the pulse width modulation (PWM) carrier waveform. By virtue of the intrinsic electrical coupling between converters, the nonlinear oscillator-based controllers converge to an interleaved state with uniform phase-spacing across PWM carriers. To the knowledge of the authors, this work represents the first fully decentralized strategy for switch interleaving of paralleled dc-dc buck converters.

  15. Multibloc system electronic equipment: D.C. linear - logarithmic amplifier and periodmeter and wide range (pulses, fluctuations and direct current) measuring set

    International Nuclear Information System (INIS)

    Guerre, J.; Plaige, Y.; Vaux, C.

    1974-01-01

    The requirements which have led to the design of a specific equipment for reactor neutron control (Multibloc system) are briefly recalled. It is shown how, for reasons of saving the cost of installation, the development tended towards a multifunction performance from signals delivered by one detector. Two major achievments in accordance with the above trend are described: the D.C. linear - logarithmic amplifier and periodmeter, and the wide dynamics range measuring set [fr

  16. DC sputter deposition of amorphous indium-gallium-zinc-oxide (a-IGZO) films with H2O introduction

    International Nuclear Information System (INIS)

    Aoi, Takafumi; Oka, Nobuto; Sato, Yasushi; Hayashi, Ryo; Kumomi, Hideya; Shigesato, Yuzo

    2010-01-01

    Amorphous indium-gallium-zinc-oxide (a-IGZO) films were deposited by dc magnetron sputtering with H 2 O introduction and how the H 2 O partial pressure (P H 2 O ) during the deposition affects the electrical properties of the films was investigated in detail. Resistivity of the a-IGZO films increased dramatically to over 2 x 10 5 Ωcm with increasing P H 2 O to 2.7 x 10 -2 Pa while the hydrogen concentration in the films increased to 2.0 x 10 21 cm -3 . TFTs using a-IGZO channels deposited under P H 2 O at 1.6-8.6 x 10 -2 Pa exhibited a field-effect mobility of 1.4-3.0 cm 2 /Vs, subthreshold swing of 1.0-1.6 V/decade and on-off current ratio of 3.9 x 10 7 -1.0 x 10 8 .

  17. Spatiotemporal synchronization of drift waves in a magnetron sputtering plasma

    Energy Technology Data Exchange (ETDEWEB)

    Martines, E.; Zuin, M.; Cavazzana, R.; Antoni, V.; Serianni, G.; Spolaore, M.; Vianello, N. [Consorzio RFX, Padova (Italy); Adámek, J. [Institute of Plasma Physics AS CR, Prague (Czech Republic)

    2014-10-15

    A feedforward scheme is applied for drift waves control in a magnetized magnetron sputtering plasma. A system of driven electrodes collecting electron current in a limited region of the explored plasma is used to interact with unstable drift waves. Drift waves actually appear as electrostatic modes characterized by discrete wavelengths of the order of few centimeters and frequencies of about 100 kHz. The effect of external quasi-periodic, both in time and space, travelling perturbations is studied. Particular emphasis is given to the role played by the phase relation between the natural and the imposed fluctuations. It is observed that it is possible by means of localized electrodes, collecting currents which are negligible with respect to those flowing in the plasma, to transfer energy to one single mode and to reduce that associated to the others. Due to the weakness of the external action, only partial control has been achieved.

  18. Spatiotemporal synchronization of drift waves in a magnetron sputtering plasma

    International Nuclear Information System (INIS)

    Martines, E.; Zuin, M.; Cavazzana, R.; Antoni, V.; Serianni, G.; Spolaore, M.; Vianello, N.; Adámek, J.

    2014-01-01

    A feedforward scheme is applied for drift waves control in a magnetized magnetron sputtering plasma. A system of driven electrodes collecting electron current in a limited region of the explored plasma is used to interact with unstable drift waves. Drift waves actually appear as electrostatic modes characterized by discrete wavelengths of the order of few centimeters and frequencies of about 100 kHz. The effect of external quasi-periodic, both in time and space, travelling perturbations is studied. Particular emphasis is given to the role played by the phase relation between the natural and the imposed fluctuations. It is observed that it is possible by means of localized electrodes, collecting currents which are negligible with respect to those flowing in the plasma, to transfer energy to one single mode and to reduce that associated to the others. Due to the weakness of the external action, only partial control has been achieved

  19. Novel composite resonance DC-DC converter with voltage doubler rectifier

    OpenAIRE

    Kato, Hisatsugu; Matsuo, Hirohumi; Eguchi, Masaki; Sakamoto, Yukitaka; Nakaishi, Masaki

    2009-01-01

    This paper deals with a novel composite resonance DC-DC converter with the voltage doubler rectifier, which is developed to be applied to the power conditioner of the photovoltaic generation system. The proposed DC-DC converter has the current and voltage resonance functions. Therefore, the output voltage regulation can be achieved for the large variations of the input voltage and load. Also, this converter has the high power efficiency. The maximum power efficiency 96.1% can be realized.

  20. Electron relaxation properties of Ar magnetron plasmas

    Science.gov (United States)

    Xinjing, CAI; Xinxin, WANG; Xiaobing, ZOU

    2018-03-01

    An understanding of electron relaxation properties in plasmas is of importance in the application of magnetrons. An improved multi-term approximation of the Boltzmann equation is employed to study electron transport and relaxation properties in plasmas. Elastic, inelastic and nonconservative collisions between electrons and neutral particles are considered. The expressions for the transport coefficients are obtained using the expansion coefficients and the collision operator term. Numerical solutions of the matrix equations for the expansion coefficients are also investigated. Benchmark calculations of the Reid model are presented to demonstrate the accuracy of the improved multi-term approximation. It is shown that the two-term approximation is generally not accurate enough and the magnetic fields can reduce the anisotropy of the velocity distribution function. The electron relaxation properties of Ar plasmas in magnetrons for various magnetic fields are studied. It is demonstrated that the energy parameters change more slowly than the momentum parameters.

  1. AC-DC PFC Converter Using Combination of Flyback Converter and Full-bridge DC-DC Converter

    Directory of Open Access Journals (Sweden)

    Moh. Zaenal Efendi

    2014-06-01

    Full Text Available This paper presents a combination of power factor correction converter using Flyback converter and Full-bridge dc-dc converter in series connection. Flyback converter is operated in discontinuous conduction mode so that it can serve as a power factor correction converter and meanwhile Full-bridge dc-dc converter is used for dc regulator. This converter system is designed to produce a 86 Volt of output voltage and 2 A of output current. Both simulation and experiment results show that the power factor of this converter achieves up to 0.99 and meets harmonic standard of IEC61000-3-2. Keywords: Flyback Converter, Full-bridge DC-DC Converter, Power Factor Correction.

  2. Fuzzy tungsten in a magnetron sputtering device

    Energy Technology Data Exchange (ETDEWEB)

    Petty, T.J., E-mail: tjpetty@liv.ac.uk [Department of Electrical Engineering and Electronics, University of Liverpool, Brownlow Hill, Liverpool, L69 3GJ (United Kingdom); Khan, A. [Pariser Building-G11, School of Mechanical, Aerospace and Civil Engineering, The University of Manchester, Manchester, M13 9PL (United Kingdom); Heil, T. [NiCaL, Block C Waterhouse Building, 1-3 Brownlow Street, Liverpool, L69 3GL (United Kingdom); Bradley, J.W., E-mail: j.w.bradley@liverpool.ac.uk [Department of Electrical Engineering and Electronics, University of Liverpool, Brownlow Hill, Liverpool, L69 3GJ (United Kingdom)

    2016-11-15

    Helium ion induced tungsten nanostructure (tungsten fuzz) has been studied in a magnetron sputtering device. Three parameters were varied, the fluence from 3.4 × 10{sup 23}–3.0 × 10{sup 24} m{sup −2}, the He ion energy from 25 to 70 eV, and the surface temperature from 900 to 1200 K. For each sample, SEM images were captured, and measurements of the fuzz layer thickness, surface roughness, reflectivity, and average structure widths are provided. A cross-over point from pre-fuzz to fully formed fuzz is found at 2.4 ± 0.4 × 10{sup 24} m{sup −2}, and a temperature of 1080 ± 60 K. No significant change was observed in the energy sweep. The fuzz is compared to low fluence fuzz created in the PISCES-A linear plasma device. Magnetron fuzz is less uniform than fuzz created by PISCES-A and with generally larger structure widths. The thicknesses of the magnetron samples follow the original Φ{sup 1/2} relation as opposed to the incubation fluence fit. - Highlights: • Fuzz has been created in a magnetron sputtering device. • Three parameters for fuzz formation have been swept. • A cross-over from pre-fuzz to fully formed fuzz is seen. • Evidence for annealing out at lower temperatures than has been seen before. • Evidence to suggest that fuzz grown in discrete exposures is not consistent with fuzz grown in one long exposure.

  3. Fuzzy tungsten in a magnetron sputtering device

    International Nuclear Information System (INIS)

    Petty, T.J.; Khan, A.; Heil, T.; Bradley, J.W.

    2016-01-01

    Helium ion induced tungsten nanostructure (tungsten fuzz) has been studied in a magnetron sputtering device. Three parameters were varied, the fluence from 3.4 × 10 23 –3.0 × 10 24  m −2 , the He ion energy from 25 to 70 eV, and the surface temperature from 900 to 1200 K. For each sample, SEM images were captured, and measurements of the fuzz layer thickness, surface roughness, reflectivity, and average structure widths are provided. A cross-over point from pre-fuzz to fully formed fuzz is found at 2.4 ± 0.4 × 10 24  m −2 , and a temperature of 1080 ± 60 K. No significant change was observed in the energy sweep. The fuzz is compared to low fluence fuzz created in the PISCES-A linear plasma device. Magnetron fuzz is less uniform than fuzz created by PISCES-A and with generally larger structure widths. The thicknesses of the magnetron samples follow the original Φ 1/2 relation as opposed to the incubation fluence fit. - Highlights: • Fuzz has been created in a magnetron sputtering device. • Three parameters for fuzz formation have been swept. • A cross-over from pre-fuzz to fully formed fuzz is seen. • Evidence for annealing out at lower temperatures than has been seen before. • Evidence to suggest that fuzz grown in discrete exposures is not consistent with fuzz grown in one long exposure.

  4. A resonant dc-dc power converter assembly

    DEFF Research Database (Denmark)

    2015-01-01

    The present invention relates to a resonant DC-DC power converter assembly comprising a first resonant DC-DC power converter and a second resonant DC-DC power converter having identical circuit topologies. A first inductor of the first resonant DC-DC power converter and a second inductor of the s......The present invention relates to a resonant DC-DC power converter assembly comprising a first resonant DC-DC power converter and a second resonant DC-DC power converter having identical circuit topologies. A first inductor of the first resonant DC-DC power converter and a second inductor...... of the second resonant DC-DC power converter are configured for magnetically coupling the first and second resonant DC-DC power converters to each other to forcing substantially 180 degrees phase shift, or forcing substantially 0 degree phase shift, between corresponding resonant voltage waveforms of the first...

  5. Magnetic field effects on coating deposition rate and surface morphology coatings using magnetron sputtering

    International Nuclear Information System (INIS)

    Yang, Yu-Sen; Huang, Wesley

    2010-01-01

    Chromium nitride coatings exhibit superior hardness, excellent wear and oxidation resistance, and are widely applied in the die and mold industries. The aim of this study was to investigate magnetic field effects on the deposition rate and surface morphology of chromium nitride coatings deposited by magnetron sputtering. Four types of magnetic field configurations, including the magnetron sputtering system, SNSN, SNNN, and intermediate magnetron modification, are discussed in this paper. SKD11 cold work die steel and a silicon (100) chip were used as substrates in the chromium nitride depositions. The process parameters, such as target current, substrate bias, and the distance between the substrate and target, are at fixed conditions, except for the magnetic arrangement type. The experimental results showed that the deposition rates of the four types of magnetic field configurations were 1.06, 1.38, 1.67 and 1.26 µm h −1 , respectively. In these cases, the SNNN type performs more than 58% faster than the unbalanced magnetron configuration does for the deposition rate. The surface morphology of chromium nitride films was also examined by SEM and is discussed in this paper

  6. A PLL based automated magnetron tuning mechanism for electron accelerators

    International Nuclear Information System (INIS)

    Khan, A M; Mahfooz, Mohammed; Sanjeev, Ganesh

    2008-01-01

    In this paper we report on a control system developed to tune the magnetron frequency to get the maximum beam pulse in a Microtron (an electron accelerator facility at Mangalore University). The control system so designed consists of a Microcontroller Unit (MCU), a Phase Locked Loop (PLL) and a Digital to Analog Converter (DAC) to track and tune the magnetron frequency. A PLL is used to track the deviation of the magnetron output frequency, and by monitoring the reflected wave voltage level, the microcontroller unit tunes the magnetron with the help of a tuner mechanism connected through a stepper motor.

  7. A PLL based automated magnetron tuning mechanism for electron accelerators

    Energy Technology Data Exchange (ETDEWEB)

    Khan, A M; Mahfooz, Mohammed [Dept. of Electronics, Mangalore University, Mangalagangotri, Karnataka State, India - 574 199 (India); Sanjeev, Ganesh [Microtron Centre, Mangalore University, Mangalagangotri, Karnataka State, India - 574 199 (India)], E-mail: mahfooz_81@yahoo.com

    2008-09-15

    In this paper we report on a control system developed to tune the magnetron frequency to get the maximum beam pulse in a Microtron (an electron accelerator facility at Mangalore University). The control system so designed consists of a Microcontroller Unit (MCU), a Phase Locked Loop (PLL) and a Digital to Analog Converter (DAC) to track and tune the magnetron frequency. A PLL is used to track the deviation of the magnetron output frequency, and by monitoring the reflected wave voltage level, the microcontroller unit tunes the magnetron with the help of a tuner mechanism connected through a stepper motor.

  8. Simultaneous distribution of AC and DC power

    Science.gov (United States)

    Polese, Luigi Gentile

    2015-09-15

    A system and method for the transport and distribution of both AC (alternating current) power and DC (direct current) power over wiring infrastructure normally used for distributing AC power only, for example, residential and/or commercial buildings' electrical wires is disclosed and taught. The system and method permits the combining of AC and DC power sources and the simultaneous distribution of the resulting power over the same wiring. At the utilization site a complementary device permits the separation of the DC power from the AC power and their reconstruction, for use in conventional AC-only and DC-only devices.

  9. Predictive Current Control of a 7-level AC-DC back-to-back Converter for Universal and Flexible Power Management System

    DEFF Research Database (Denmark)

    Bifaretti, Steffano; Zanchetta, Pericle; Iov, Florin

    2008-01-01

    The paper proposes a novel power conversion system for Universal and Flexible Power Management (UNIFLEX-PM) in Future Electricity Network. Its structure is based on a back-to-back three-phase AC-DC 7-level converter; each AC side is connected to a different PCC, representing the main grid and....../or various distributed generation systems. Effective and accurate power flow control is demonstrated through simulation in Matlab- Simulink environment on a model based on a two-port structure and using a Predictive Control technique. Control of different Power flow profiles has been successfully tested...

  10. DC Cable for Railway

    Science.gov (United States)

    Tomita, Masaru

    The development of a superconducting cable for railways has commenced, assuming that a DC transmission cable will be used for electric trains. The cable has been fabricated based on the results of current testing of a superconducting wire, and various evaluation tests have been performed to determine the characteristics of the cable. A superconducting transmission cable having zero electrical resistance and suitable for railway use is expected to enhance regeneration efficiency, reduce power losses, achieve load leveling and integration of sub-stations, and reduce rail potential.

  11. Studi Komparasi Fungsi Keanggotaan Fuzzy sebagai Kontroler Bidirectional DC-DC Converter pada Sistem Penyimpan Energi

    Directory of Open Access Journals (Sweden)

    Eka Prasetyono

    2015-09-01

    Full Text Available Bidirectional DC-DC converter is needed in the energy storage system. The converter topology used in this paper was a non-isolated bidirectional DC-DC buck-boost converter. This converter worked in two ways, which the charging mode stored energy into battery when load current was less than nominal main DC current (set point and discharging mode transferred energy from battery to the load when its current exceeded set point value. Both of these modes worked automatically according to the load current. The charging and discharging currents were controlled by fuzzy logic controller which was implemented on microcontroller ARM Cortex-M4F STM32F407VG. This paper compares two types of fuzzy membership function (triangular and sigmoid in controlling bidirectional DC-DC converter. The results showed that fuzzy logic controller with triangle membership function and sigmoid as control bidirectional DC-DC converter had no significant different response, both had an average error for charging and discharging process under 4% with ripple current on the main DC bus around 0.5%. The computing time of program for fuzzy logic controller with triangular membership functions had 19.01% faster than sigmoid, and fuzzy logic computation time on a microcontroller with hardware floating point was 60% faster than software floating point.

  12. Modeling, Control and Protection of Low-Voltage DC Microgrids

    OpenAIRE

    Salomonsson, Daniel

    2008-01-01

    Current trends in electric power consumption indicate an increasing use of dc in end-user equipment, such as computers and other electronic appliances used in households and offices. With a dc power system, ac/dc conversion within these loads can be avoided, and losses reduced. AC/DC conversion is instead centralized, and by using efficient, fully controllable power-electronic interfaces, high power quality for both ac and dc systems during steady state and ac grid disturbances can be obtaine...

  13. Monte Carlo simulation of ionization in a magnetron plasma

    International Nuclear Information System (INIS)

    Miranda, J.E.; Goeckner, M.J.; Goree, J.; Sheridan, T.E.

    1990-01-01

    A Monte Carlo simulation of electrons emitted from the cathode of a planar magnetron is tested against experiments that were reported by Wendt, Lieberman, and Meuth [J. Vac. Sci. Technol. A 6, 1827 (1988)] and by Gu and Lieberman [J. Vac. Sci. Technol. A 6, 2960 (1988)]. Comparing their measurements of the radial profile of current and the axial profile of optical emission to the ionization profiles predicted by the model, we find good agreement for a typical magnetic field strength of 456 G. We also find that at 456 G the product of the average number of ionizations left-angle N i right-angle and the secondary electron emission coefficient γ is ∼1. This indicates that secondary emission contributes significantly to the ionization that sustains the discharge. At 171 G, however, left-angle N i right-angle γ much-lt 1, revealing that cathode emission is inadequate to sustain a discharge at a low magnetic field

  14. IGBT Based DC/DC Converter

    Directory of Open Access Journals (Sweden)

    M. Akherraz

    1997-12-01

    Full Text Available This paper presents an in-depth analytical and experimental investigation of an indirect DC-DC converter. The DC-AC conversion is a full bridge based on IGBT power modules, and the AC-DC conversion is done via a high  frequency AC link and a first diode bridge. The AC link, which consists of snubbing capacitors and a variable air-gap transformer, is analytically designed to fulfill Zero Voltage commutation requirement. The proposed converter is simulated using PSPICE and a prototype is designed built and tested in the laboratory. PSPICE simulation and experimental results are presented and compared.

  15. A DC Transformer

    Science.gov (United States)

    Youngquist, Robert C.; Ihlefeld, Curtis M.; Starr, Stanley O.

    2013-01-01

    A component level dc transformer is described in which no alternating currents or voltages are present. It operates by combining features of a homopolar motor and a homopolar generator, both de devices, such that the output voltage of a de power supply can be stepped up (or down) with a corresponding step down (or up) in current. The basic theory for this device is developed, performance predictions are made, and the results from a small prototype are presented. Based on demonstrated technology in the literature, this de transformer should be scalable to low megawatt levels, but it is more suited to high current than high voltage applications. Significant development would be required before it could achieve the kilovolt levels needed for de power transmission.

  16. Development of natively textured surface hydrogenated Ga-doped ZnO-TCO thin films for solar cells via magnetron sputtering

    International Nuclear Information System (INIS)

    Wang, Fei; Chen, Xin-liang; Geng, Xin-hua; Zhang, De-kun; Wei, Chang-chun; Huang, Qian; Zhang, Xiao-dan; Zhao, Ying

    2012-01-01

    Highlights: ► Natively textured surface hydrogenated gallium-doped zinc oxide (HGZO) thin films have been deposited via magnetron sputtering on glass substrates. ► The directly deposited HGZO thin films present rough crater-type surface morphology. ► Typical HGZO thin film exhibits a high electron mobility of 41.3 cm 2 /V s and a relative low sheet resistance of ∼7.0 Ω. ► These HGZO thin films have high optical transmittances in the visible and near infrared region (∼380–1100 nm). ► A gradient H 2 growth method for fabricating HGZO thin films has been proposed in magnetron sputtering process. - Abstract: The main purposes are to obtain high quality transparent conductive oxide (TCO) based on zinc oxide (ZnO) thin films with high optical transparency in the visible and near infrared spectral range, high electrical conductivity and good light-scattering capability to enhance the path of the light inside the Si-based thin film solar cells. Natively textured surface hydrogenated gallium-doped ZnO (HGZO) thin films have been deposited via pulsed direct current (DC) magnetron sputtering on glass substrates at a substrate temperature of 553 K. These natively textured HGZO thin films exhibit high optical transmittance (over 80%) in the visible and near infrared region (λ = 380–1100 nm) and excellent electrical properties. The optimized HGZO thin film with crater-type textured surface obtained at the hydrogen flow rate of ∼2.0 sccm exhibits a high electron mobility of 41.3 cm 2 /V s and a relatively low sheet resistance of ∼7.0 Ω. The influences of hydrogen flow rates on the surface morphology, electrical and optical properties of HGZO thin films were investigated in detail. In addition, we put forward a method of gradient H 2 growth technique for fabricating HGZO thin films so as to obtain rough surface structure with good light-scattering capability and high electrical conductivity. “Crater-like” surface feature size and optical transmittance

  17. dc power system for deuteron accelerator

    Energy Technology Data Exchange (ETDEWEB)

    Creek, K.O.; Liska, D.J.

    1981-01-01

    The Fusion Materials Irradiation Test (FMIT) Facility dc power system provides excitation current for all linac and High-Energy Beam Transport (HEBT) quadrupole and bending magnets, excitation for horizontal and vertical beam steering, and current-bypass shunts.

  18. Dual-Input Soft-Switched DC-DC Converter with Isolated Current-Fed Half-Bridge and Voltage-Fed Full-Bridge for Fuel Cell or Photovoltaic Systems

    DEFF Research Database (Denmark)

    Zhang, Zhe; Thomsen, Ole Cornelius; Andersen, Michael A. E.

    2013-01-01

    integrate a current-fed boost half-bridge (BHB) and a full-bridge (FB) into one equivalent circuit configuration which has dual-input ability and additionally it can reduce the number of the power devices. With the phase-shift control, it can achieve zero-voltage switching turn-on of active switches...... power rating are built up and tested to demonstrate the effectiveness of the proposed converter topology....

  19. Analysis of Planar E+I and ER+I Transformers for Low-Voltage High-Current DC/DC Converters with Focus on Winding Losses and Leakage Inductance

    DEFF Research Database (Denmark)

    Pittini, Riccardo; Zhang, Zhe; Ouyang, Ziwei

    2012-01-01

    on winding resistance and leakage inductances which represent the main concerns related to low-voltage high-current applications. The PCB winding design has a one to one turn ratio with no interleaving between primary and secondary windings. The main goal was to determine if ER planar core could provide...... a significant advantage in terms of winding losses compared to planar E cores. Results from finite element analysis highlight that low frequency winding resistance is lower for the ER core since it is dominated by the lower mean turn length however, as the AC-resistance becomes dominating the winding eddy...... more realistic results when computing the winding AC-resistance....

  20. Improved Control Strategy for T-type Isolated DC/DC Converters

    DEFF Research Database (Denmark)

    Liu, Dong; Deng, Fujin; Wang, Yanbo

    2017-01-01

    T-type isolated DC/DC converters have recently attracted attention due to their numerous advantages, including few components, low cost, and symmetrical operation of transformers. This study proposes an improved control strategy for increasing the efficiency of T-type isolated DC/DC converters....... Under the proposed strategy, the primary circulating current flows through the auxiliary switches (metal–oxide–semiconductor field-effect transistors) instead of their body diodes in free-wheeling periods. Such feature can reduce conduction losses, thereby improving the efficiency of T-type isolated DC...