WorldWideScience

Sample records for current dc magnetron

  1. Current-pressure dependencies of dc magnetron discharge in inert gases

    Science.gov (United States)

    Serov, A. O.; Mankelevich, Yu A.; Pal, A. F.; Ryabinkin, A. N.

    2016-11-01

    The current-pressure (I-P) characteristics of dc magnetron discharge in inert gases (Ar, Kr and Xe) for various constant discharge voltages were measured. Under certain conditions on I-P characteristic, the nonmonotonic region of local maximum followed by a minimum is observed. It is found that increasing mass of the working gas ions results in a shift of the local maximum to lower pressures. The spatial distribution of ions in the plasma was studied by optical emission spectroscopy. Transformation of the discharge spatial structure with pressure was observed. A qualitative model of the observed trends is presented. It takes into account the pressure dependence of the discharge spatial structure, the capturing of secondary electrons by the cathode and charge exchange effects.

  2. The role of Ohmic heating in dc magnetron sputtering

    Science.gov (United States)

    Brenning, N.; Gudmundsson, J. T.; Lundin, D.; Minea, T.; Raadu, M. A.; Helmersson, U.

    2016-12-01

    Sustaining a plasma in a magnetron discharge requires energization of the plasma electrons. In this work, Ohmic heating of electrons outside the cathode sheath is demonstrated to be typically of the same order as sheath energization, and a simple physical explanation is given. We propose a generalized Thornton equation that includes both sheath energization and Ohmic heating of electrons. The secondary electron emission yield {γ\\text{SE}} is identified as the key parameter determining the relative importance of the two processes. For a conventional 5 cm diameter planar dc magnetron, Ohmic heating is found to be more important than sheath energization for secondary electron emission yields below around 0.1.

  3. Comparative Study of Cu Films Prepared by DC, High-Power Pulsed and Burst Magnetron Sputtering

    Science.gov (United States)

    Solovyev, A. A.; Oskirko, V. O.; Semenov, V. A.; Oskomov, K. V.; Rabotkin, S. V.

    2016-08-01

    A comparative study of deposition rate, adhesion, structural and electrical properties of nanocrystalline copper thin films deposited using direct current magnetron sputtering (DCMS) and different regimes of high power pulsed magnetron sputtering is presented. High-power impulse magnetron sputtering (HIPIMS) and burst regime (pulse packages) of magnetron sputtering are investigated. The ion and atomic flows toward the growing film during magnetron sputtering of a Cu target are determined. X-ray diffraction, scanning electron microscopy and atomic force microscopy were used to observe the structural characterization of the films. The resistivity of the films was measured using four-point probe technique. In all sputtering regimes, Cu films have mixture crystalline orientations of [111], [200], [311] and [220] in the direction of the film growth. As peak power density in studied deposition regimes was different in order of magnitude (from 15 W/cm2 in DC regime to 3700 W/cm2 in HIPIMS), film properties were also greatly different. DCMS Cu films exhibit a porous columnar grain structure. In contrast, HIPIMS Cu films have a slightly columnar and denser composition. Cu films deposited using burst regimes at peak power density of 415 W cm-2 and ion-to-atom ratio of about 5 have the densest composition and smallest electrical resistance.

  4. Simulation to Predict Target Erosion of Planar DC Magnetron

    Institute of Scientific and Technical Information of China (English)

    QIU Qingquan; LI Qingfu; SU Jingjing; JIAO Yu; FINLEY Jing

    2008-01-01

    Plasma properties in a planar DC magnetron system are simulated by a non-selfconsistent particle method in two dimensions.Through tracing the trajectories of the energetic electrons in the specified electric field and the magnetic field,and treating the collision process by Monte Carlo method,the spatial profile of ionization events can be obtained conveniently.Assuming that the ions speed up from the ionization points and bombard the target with the energy at these points,and according to the Yamamura/Tawara method,the target erosion can be predicted.The magnetic field is calculated by the finite element method,and the electric field is estimated according to the self-consistent simulation and measured results.The influence of the time step size on the target erosion profile is analysed first to find a proper step size.Then the influence of electric field estimated on the erosion profile is discussed.The erosion profile may become narrower if the sheath thickness is increased.Finally,considering the dynamic erosion process,the erosion profile may get wider over time for the magnetron with shunt bar.

  5. Determination of the deposition rate of DC magnetron sputtering in fabrication of X-ray supermirrors

    Institute of Scientific and Technical Information of China (English)

    Fengli Wang; Zhanshan Wang; Jingtao Zhu; Zhong Zhang; Wenjuan Wu; Shumin Zhang; Lingyan Chen

    2006-01-01

    @@ X-ray supermirror is a non-periodic multilayer structure,whose optical performance is greatly affected by the stability and accuracy of the deposition rate in the fabrication using the direct current (DC) magnetron sputtering.By considering the location-setting time of the substrate positioning above the sputtering target,the deposition rate can be accurately determined.Experimental results show that the optical performance of the supermirror is in agreement with the design aim,which indicates that the layer thickness is well controlled and coincides with the desired ones.

  6. Influence of direct current plasma magnetron sputtering parameters on the material characteristics of polycrystalline copper films

    Energy Technology Data Exchange (ETDEWEB)

    Chan, K.-Y. [Thin Film Laboratory, Faculty of Engineering, Multimedia University, Jalan Multimedia, 63100 Cyberjaya, Selangor (Malaysia)], E-mail: k.y.chan@fz-juelich.de; Luo, P.-Q.; Zhou, Z.-B. [Department of Physics, Shanghai Jiao Tong University, 800 Dongchuan Road, 200240 Shanghai (China); Tou, T.-Y.; Teo, B.-S. [Thin Film Laboratory, Faculty of Engineering, Multimedia University, Jalan Multimedia, 63100 Cyberjaya, Selangor (Malaysia)

    2009-03-01

    Physical vapor processes using glow plasma discharge are widely employed in microelectronic industry. In particular magnetron sputtering is a major technique employed for the coating of thin films. This paper addresses the influence of direct current (DC) plasma magnetron sputtering parameters on the material characteristics of polycrystalline copper (Cu) thin films coated on silicon substrates. The influence of the sputtering parameters including DC plasma power and argon working gas pressure on the electrical and structural properties of the thin Cu films was investigated by means of surface profilometer, four-point probe and atomic force microscopy.

  7. Substrate Frequency Effects on Cr x N Coatings Deposited by DC Magnetron Sputtering

    Science.gov (United States)

    Obrosov, Aleksei; Naveed, Muhammad; Volinsky, Alex A.; Weiß, Sabine

    2016-11-01

    Controlled ion bombardment is a popular method to fabricate desirable coating structures and modify their properties. Substrate biasing at high frequencies is a possible technique, which allows higher ion density at the substrate compared with DC current bias. Moreover, high ion energy along with controlled adatom mobility would lead to improved coating growth. This paper focuses on a similar type of study, where effects of coating growth and properties of DC magnetron-sputtered chromium nitride (Cr x N) coatings at various substrate bias frequencies are discussed. Cr x N coatings were deposited by pulsed DC magnetron sputtering on Inconel 718 and (100) silicon substrates at 110, 160 and 280 kHz frequency at low duty cycle. Coating microstructure and morphology were studied by X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM), scratch adhesion testing and nanoindentation. Results indicate a transformation of columnar into glassy structure of Cr x N coatings with the substrate bias frequency increase. This transformation is attributed to preferential formation of the Cr2N phase at high frequencies compared with CrN at low frequencies. Increase in frequency leads to an increase in deposition rate, which is believed to be due to increase in plasma ion density and energy of the incident adatoms. An increase in coating hardness along with decrease in elastic modulus was observed at high frequencies. Scratch tests show a slight increase in coating adhesion, whereas no clear increase in coating roughness can be found with the substrate bias frequency.

  8. Reactive DC magnetron sputtered zirconium nitride (ZrN) thin film and its characterization

    Science.gov (United States)

    Subramanian, B.; Ashok, K.; Sanjeeviraja, C.; Kuppusami, P.; Jayachandran, M.

    2008-05-01

    Zirconium nitride (ZrN) thin films were prepared by using reactive direct current (DC) magnetron sputtering onto different substrates. A good polycrystalline nature with face centered cubic structure was observed from X-ray Diffraction for ZrN thin films. The observed 'd' values from the X-ray Diffraction pattern were found to be in good agreement with the standard 'd' values (JCPDS-89-5269). An emission peak is observed at 587nm from Photoluminescence studies for the excitation at 430nm. The resistivity value (ρ) of 2.1798 (μΩ cm) was observed. ZrN has high wear resistance and low coefficient of friction. A less negative value of Ecorr and lower value of Icorr observed for ZrN / Mild Steel (MS) clearly confirm the better corrosion resistance than the bare substrate. Also the higher Rct value and lower Cdl value was observed for ZrN / MS from Nyquist - plot.

  9. Production of carbon nanotubes by the magnetron DC sputtering method

    NARCIS (Netherlands)

    Antonenko, SV; Mal'tsev, SN

    2005-01-01

    Carbon films containing multiwall nanotubes were produced by the magnetron de sputtering method. A graphite disc with Y and Ni catalyst plates was used as a target. The structural and morphological properties of the films were investigated using a JEM 2000EXII transmission electron microscope. The f

  10. DC-Compensated Current Transformer.

    Science.gov (United States)

    Ripka, Pavel; Draxler, Karel; Styblíková, Renata

    2016-01-20

    Instrument current transformers (CTs) measure AC currents. The DC component in the measured current can saturate the transformer and cause gross error. We use fluxgate detection and digital feedback compensation of the DC flux to suppress the overall error to 0.15%. This concept can be used not only for high-end CTs with a nanocrystalline core, but it also works for low-cost CTs with FeSi cores. The method described here allows simultaneous measurements of the DC current component.

  11. Investigation of photocatalytic activity of titanium dioxide deposited on metallic substrates by DC magnetron sputtering

    DEFF Research Database (Denmark)

    Daviðsdóttir, Svava; Canulescu, Stela; Dirscherl, Kai

    2013-01-01

    The photocatalytic properties of titanium dioxide (TiO2) coating in the anatase crystalline structure deposited on aluminium AA1050 alloy and stainless steel S316L substrates were investigated. The coating was prepared by DC magnetron sputtering. The microstructure and surface morphology...

  12. A novel DC Magnetron sputtering facility for space research and synchrotron radiation optics

    DEFF Research Database (Denmark)

    Hussain, A.M.; Christensen, Finn Erland; Pareschi, G.;

    1998-01-01

    A new DC magnetron sputtering facility has been build up at the Danish Space Research Institute (DSRI), specially designed to enable uniform coatings of large area curved optics, such as Wolter-I mirror optics used in space telescopes and curved optics used in synchrotron radiation facilities...

  13. DC superconducting fault current limiter

    Science.gov (United States)

    Tixador, P.; Villard, C.; Cointe, Y.

    2006-03-01

    There is a lack of satisfying solutions for fault currents using conventional technologies, especially in DC networks, where a superconducting fault current limiter could play a very important part. DC networks bring a lot of advantages when compared to traditional AC ones, in particular within the context of the liberalization of the electric market. Under normal operation in a DC network, the losses in the superconducting element are nearly zero and only a small, i.e. a low cost, refrigeration system is then required. The absence of zero crossing of a DC fault current favourably accelerates the normal zone propagation. The very high current slope at the time of the short circuit in a DC grid is another favourable parameter. The material used for the experiments is YBCO deposited on Al2O3 as well as YBCO coated conductors. The DC limitation experiments are compared to AC ones at different frequencies (50-2000 Hz). Careful attention is paid to the quench homogenization, which is one of the key issues for an SC FCL. The University of Geneva has proposed constrictions. We have investigated an operating temperature higher than 77 K. As for YBCO bulk, an operation closer to the critical temperature brings a highly improved homogeneity in the electric field development. The material can then absorb large energies without degradation. We present tests at various temperatures. These promising results are to be confirmed over long lengths.

  14. Comparison of the structural properties and residual stress of AlN films deposited by dc magnetron sputtering and high power impulse magnetron sputtering at different working pressures

    Energy Technology Data Exchange (ETDEWEB)

    Ait Aissa, K.; Achour, A., E-mail: a_aminph@yahoo.fr; Camus, J.; Le Brizoual, L.; Jouan, P.-Y.; Djouadi, M.-A.

    2014-01-01

    Aluminium nitride (AlN) films were deposited by dc magnetron sputtering (dcMS) and high power impulse magnetron sputtering (HiPIMS) on (100) oriented silicon (Si) substrates, in Ar–N{sub 2} gas mixture, at different working pressures. The films were characterized using X-ray diffraction (XRD), profilometer and transmission electron microscopy (TEM). The effect of the sputtering pressure on the structure, the residual stress and the deposition rate of AlN films deposited by the two processes (dcMS and HiPIMS) was investigated. It was found that the deposition rate is always lower in HiPIMS compared to dcMS. The AlN films are textured along (002) direction in both cases of dcMS and HiPIMS as it is indicated by XRD measurements, with residual stresses which are more important in the case of films deposited by HiMIPS. These residual stresses decrease with the sputtering pressure increase, especially in the case of the films deposited by HiPIMS. TEM analyses have shown a local epitaxial growth of AlN on the Si substrate which would favour thermal evacuation improvement of AlN as thermal interface material. - Highlights: • Highly c-axis oriented AlN films were obtained. • dc magnetron sputtering and high power impulse magnetron sputtering (HiMIPS) were used. • Abrupt interface between AlN and silicon substrate was obtained by HiPIMS.

  15. Optical and Chemical Properties of Mixed-valent Rhenium Oxide Films Synthesized by Reactive DC Magnetron Sputtering

    Science.gov (United States)

    2015-04-03

    AFRL-RX-WP-JA-2015-0178 OPTICAL AND CHEMICAL PROPERTIES OF MIXED- VALENT RHENIUM OXIDE FILMS SYNTHESIZED BY REACTIVE DC MAGNETRON...To) 06 May 2010 – 16 March 2015 4. TITLE AND SUBTITLE OPTICAL AND CHEMICAL PROPERTIES OF MIXED-VALENT RHENIUM OXIDE FILMS SYNTHESIZED BY REACTIVE ...DC MAGNETRON SPUTTERING (POSTPRINT) 5a. CONTRACT NUMBER In-house 5b. GRANT NUMBER 5c. PROGRAM ELEMENT NUMBER 62102F 6. AUTHOR(S) (see

  16. TiO2 Thin Film UV Detectors Deposited by DC Reactive Magnetron Sputtering

    Institute of Scientific and Technical Information of China (English)

    ZHANG Li-wei; YAO Ning; ZHANG Bing-lin; FAN Zhi-qin; YANG Shi-e; LU Zhan-ling

    2004-01-01

    Crystalline TiO2 thin films were prepared by DC reactive magnetron sputtering on indium-tin oxide(ITO) thin film deposited on quartz substrate, the photoconductive UV detector on TiO2 thin films was based on a sandwich structure of C/ TiO2/ITO. The measurement of the I-V characteristics for these devices shows good ohmic contact. The photoresponse of TiO2 thin films was analyzed at different bias voltage. Voltage.

  17. Synthesizing mixed phase titania nanocomposites with enhanced photoactivity and redshifted photoresponse by reactive DC magnetron sputtering

    Science.gov (United States)

    Chen, Le

    Recent work points out the importance of the solid-solid interface in explaining the high photoactivity of mixed phase TiO2 catalysts. The goal of this research was to probe the synthesis-structure-function relationships of the solid-solid interfaces created by the reactive direct current (DC) magnetron sputtering of titanium dioxide. I hypothesize that the reactive DC magnetron sputtering is a useful method for synthesizing photo-catalysts with unique structure including solid-solid interfaces and surface defects that are associated with enhanced photoreactivity as well as a photoresponse shifted to longer wavelengths of light. I showed that sputter deposition provides excellent control of the phase and interface formation as well as the stoichiometry of the films. I explored the effects exerted by the process parameters of pressure, oxygen partial pressure, target power, substrate bias (RF), deposition incidence angle, and post annealing treatment on the structural and functional characteristics of the catalysts. I have successfully made pure and mixed phase TiO2 films. These films were characterized with UV-Vis, XPS, AFM, SEM, TEM, XRD and EPR, to determine optical properties, elemental stoichiometry, surface morphology, phase distribution and chemical coordination. Bundles of anatase-rutile nano-columns having high densities of dual-scale of interfaces among and within the columns are fabricated. Photocatalytic performance of the sputtered films as measured by the oxidation of the pollutant, acetaldehyde, and the reduction of CO2 for fuel (CH4) production was compared (normalized for surface area) to that of mixed phase TiO2 fabricated by other methods, including flame hydrolysis powders, and solgel deposited TiO 2 films. The sputtered mixed phase materials were far superior to the commercial standard (Degussa P25) and solgel TiO2 based on gas phase reaction of acetaldehyde oxidation under UV light and CO2 reduction under both UV and visible illuminations. The

  18. Photoluminescence properties of ZnO thin films prepared by DC magnetron sputtering

    Institute of Scientific and Technical Information of China (English)

    YANG Bing-chu; LIU Xiao-yan; GAO Fei; MA Xue-long

    2008-01-01

    ZnO thin films were prepared by direct current(DC) reactive magnetron sputtering under different oxygen partial pressures.And then the samples were annealed in vacuum at 450 ℃. The effects of the oxygen partial pressures and the treatment of annealing in vacuum on the photoluminescence and the concentration of six intrinsic defects in ZnO thin films such as oxygen vacancy(Vo),zinc vacancy(VZn), antisite oxygen(OZn), antisite zinc(ZnO), interstitial oxygen(Oi) and interstitial zinc(Zni) were studied. The results show that a green photoluminescence peak at 520 nm can be observed in all the samples, whose intensity increases with increasing oxygen partial pressure; for the sample annealed in vacuum, the intensity of the green peak increases as well. The green photoluminescence peak observed in ZnO may be attributed to zinc vacancy, which probably originates from transitions between electrons in the conduction band and zinc vacancy levels, or from transitions between electrons in zinc vacancy levels and up valence band.

  19. High rate deposition of thin film cadmium sulphide by pulsed direct current magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Lisco, F., E-mail: F.Lisco@lboro.ac.uk [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire LE11 3TU (United Kingdom); Kaminski, P.M.; Abbas, A.; Bowers, J.W.; Claudio, G. [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire LE11 3TU (United Kingdom); Losurdo, M. [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR, via Orabona 4, 70126 Bari (Italy); Walls, J.M. [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire LE11 3TU (United Kingdom)

    2015-01-01

    Cadmium Sulphide (CdS) is an important n-type semiconductor widely used as a window layer in thin film photovoltaics Copper Indium Selenide, Copper Indium Gallium (di)Selenide, Copper Zinc Tin Sulphide and Cadmium Telluride (CdTe). Cadmium Sulphide has been deposited using a number of techniques but these techniques can be slow (chemical bath deposition and Radio Frequency sputtering) or the uniformity and the control of thickness can be relatively difficult (close space sublimation). In this paper we report on the development of a process using pulsed Direct Current magnetron sputtering which allows nanometre control of thin film thickness using time only. The CdS thin films deposited in this process are highly uniform and smooth. They exhibit the preferred hexagonal structure at room temperature deposition and they have excellent optical properties. Importantly, the process is highly stable despite the use of a semi-insulating magnetron target. Moreover, the process is very fast. The deposition rate using 1.5 kW of power to a 6-inch circular magnetron was measured to be greater than 8 nm/s. This makes the process suitable for industrial deployment. - Highlights: • Pulsed DC magnetron sputtering of CdS • High deposition rate deposition • Uniform, pinhole free films.

  20. Microstructural Comparisons of Ultra-Thin Cu Films Deposited by Ion-Beam and dc-Magnetron Sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Prater, W.

    2004-11-04

    We report and contrast both the electrical resistance and the microstructure of copper thin films deposited in an oxygen containing atmosphere by ion-beam and dc-magnetron sputtering. For films with thicknesses 5 nm or less, the resistivity of the Cu films is minimized at oxygen concentrations ranging from 0.2% to 1% for dc-magnetron sputtering and 6% to 10% for ion beam sputtering. Films sputtered under both conditions show a similar decrease of interface roughness with increasing oxygen concentration, although the magnetron deposited films are smoother. The dc-magnetron produced films have higher resistivity, have smaller Cu grains, and contain a higher concentration of cuprous oxide particles. We discuss the mechanisms leading to the grain refinement and the consequent reduced resistivity in both types of films.

  1. Study of cobalt mononitride thin films prepared using DC and high power impulse magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Gupta, Rachana, E-mail: dr.rachana.gupta@gmail.com [Institute of Engineering & Technology, DAVV, Khandwa Road, Indore – 452 017 (India); Pandey, Nidhi; Behera, Layanta; Gupta, Mukul [UGC-DAE Consortium for Scientific Research, Khandwa Road, University Campus, Indore-452001 (India)

    2016-05-23

    In this work we studied cobalt mononitride (CoN) thin films deposited using dc magnetron sputtering (dcMS) and high power impulse magnetron sputtering (HiPIMS). A Co target was sputtered using pure N{sub 2} gas alone as the sputtering medium. Obtained long-range structural ordering was studies using x-ray diffraction (XRD), short-range structure using Co L{sub 2,3} and N K absorption edges using soft x-ray absorption spectroscopy (XAS) and the surface morphology using atomic force microscopy (AFM). It was found that HiPIMS deposited films have better long-range ordering, better stoichiometric ratio for mononitride composition and smoother texture as compared to dcMS deposited films. In addition, the thermal stability of HiPIMS deposited CoN film seems to be better. On the basis of different type of plasma conditions generated in HiPIMS and dcMS process, obtained results are presented and discussed.

  2. Reduction in plasma potential by applying negative DC cathode bias in RF magnetron sputtering

    Science.gov (United States)

    Isomura, Masao; Yamada, Toshinori; Osuga, Kosuke; Shindo, Haruo

    2016-11-01

    We applied a negative DC bias voltage to the cathode of an RF magnetron sputtering system and successfully reduced the plasma potential in both argon plasma and hydrogen-diluted argon plasma. The crystallinity of the deposited Ge films is improved by increasing the negative DC bias voltage. It is indicated that the reduction in plasma potential is effective for reducing the plasma damage on deposited materials, caused by the electric potential between the plasma and substrates. In addition, the deposition rate is increased by the increased electric potential between the plasma and the cathode owing to the negative DC bias voltage. The present method successfully gives us higher speed and lower damage sputtering deposition. The increased electric potential between the plasma and the cathode suppresses the evacuation of electrons from the plasma and also enhances the generation of secondary electrons on the cathode. These probably suppress the electron loss from the plasma and result in the reduction in plasma potential.

  3. Characterization of DC magnetron sputtering deposited thin films of TiN for SBN/MgO/TiN/Si structural waveguide

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    Optimal parameters for depositing Titanium nitride (TiN) thin films by DC reactive magnetron sputtering were determined. TiN thin films were deposited on Si (100) substrates by DC reactive magnetron sputtering, at different temperatures,different electrical current values, and different N2/Ar ratios. Structural characteristics of TiN thin films were measured by X-ray diffraction (XRD); surface morphology of the thin films was characterized using an atomic force microscope (AFM). The electric resistivity of the TiN films was measured by a four-point probe. In the result, temperature is 500 ℃, electrical current value is 1.6 A, pure N2 is the reacting gas, TiN thin film has the preferred (200) orientation, resistance is small enough for its use as bottom electrodes.

  4. Use of Multiple DC Magnetron Deposition Sources for Uniform Coating of Large Areas (Preprint)

    Science.gov (United States)

    2009-06-01

    2005- 1 June 2009 4. TITLE AND SUBTITLE 5a. CONTRACT NUMBER FA9451-04-C-0067 DF297548 Use of multiple DC magnetron deposition sources for...thickness at some point on the substrate plane to yield a relative thickness distribution or it can be used to find the ratio Mlm which will be useful... Mlm of the material deposited in each area, is shown in columns 3 though 5, for the three sources.. For example, within the area from the center of the

  5. Photocatalytic Property of TiO2 Films Deposited by Pulsed DC Magnetron Sputtering

    Institute of Scientific and Technical Information of China (English)

    Wenjie ZHANG; Shenglong ZHU; Ying LI; Fuhui WANG

    2004-01-01

    TiO2 thin films were prepared by DC magnetron sputtering with the oxygen flow rate higher than the threshold. The film deposited for 5 h was of anatase phase with a preferred orientation along the direction, but the films deposited for 2 and 3 h were amorphous. The transmittance and photocatalytic activity of the TiO2 films increased constantly with increasing film thickness. When the annealing temperature was lower than 700℃, only anatase grew in the TiO2 film. TiO2 phase changed from anatase to rutile when the annealing temperature was above 800℃. The photocatalytic activity decreased with increasing annealing temperature.

  6. Discharge current modes of high power impulse magnetron sputtering

    Directory of Open Access Journals (Sweden)

    Zhongzhen Wu

    2015-09-01

    Full Text Available Based on the production and disappearance of ions and electrons in the high power impulse magnetron sputtering plasma near the target, the expression of the discharge current is derived. Depending on the slope, six possible modes are deduced for the discharge current and the feasibility of each mode is discussed. The discharge parameters and target properties are simplified into the discharge voltage, sputtering yield, and ionization energy which mainly affect the discharge plasma. The relationship between these factors and the discharge current modes is also investigated.

  7. Hysteretic Current Controlled Zvs Dc/Dc Converter For Automobile

    DEFF Research Database (Denmark)

    Cernat, M.; Scortarul, P.; Tanase, A.

    2007-01-01

    A novel bi-directional dc-dc converter with ZVS and interleaving for dual voltage systems in automobiles is presented. A variable frequency extended band hysteretic current control method is proposed. In comparison with classical fixed frequency current control PWM, the reverse polarity peak curr...

  8. A Current-Fed Isolated Bidirectional DC-DC Converter

    DEFF Research Database (Denmark)

    Sun, Xiaofeng; Wu, Xiaoying; Shen, Yanfeng;

    2017-01-01

    This paper proposes a current-fed isolated bidirectional DC-DC converter (CF-IBDC) which has the advantages of wide input voltage range, low input current ripple, low conduction losses, and soft switching over the full operating range. Compared with conventional CF-IBDCs, the voltage spikes of th...

  9. Room temperature DC magnetron sputtering deposition and field emission of Al-doped ZnO films

    Energy Technology Data Exchange (ETDEWEB)

    Ye, Fan; Cai, Xing-Min; Zhang, Dong-Ping; Fan, Ping; Liu, Li-Jun [School of Physical Science and Technology and Shenzhen Key Laboratory of Sensor Technologies, Shenzhen University, Shenzhen 518060 (China); Dai, Fu-Ping [Department of Applied Physics, Northwestern Polytechnic University, Xian 710072 (China)

    2011-08-15

    Al doped ZnO films were prepared by reactive direct current (DC) magnetron sputtering at room temperature. The targets were metallic Al and Zn while the gases were Ar and O{sub 2}. X-ray diffraction (XRD) shows that the films are of hexagonal structure and Al is successfully doped into ZnO without secondary phases detected. Raman scattering spectra of the films contain the E{sub 1} mode of ZnO. Seebeck effect shows that the films are n-type and four probe instrument shows that the films are very resistive. The high resistivity is due to the compensation of acceptors such as oxygen vacancies and substitutional nitrogen atoms. The acceptors reduce the electron density and increase the work function of ZnO, which therefore weakens the field emission of Al doped ZnO films. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  10. Thickness effect on properties of titanium film deposited by d.c. magnetron sputtering and electron beam evaporation techniques

    Indian Academy of Sciences (India)

    Nishat Arshi; Junqing Lu; Chan Gyu Lee; Jae Hong Yoon; Bon Heun Koo; Faheem Ahmed

    2013-10-01

    This paper reports effect of thickness on the properties of titanium (Ti) film deposited on Si/SiO2 (100) substrate using two different methods: d.c. magnetron sputtering and electron beam (e-beam) evaporation technique. The structural and morphological characterization of Ti film were performed using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM). XRD pattern revealed that the films deposited using d.c. magnetron sputtering have HCP symmetry with preferred orientation along (002) plane, while those deposited with e-beam evaporation possessed fcc symmetry with preferred orientation along (200) plane. The presence of metallic Ti was also confirmed by XPS analysis. FESEM images depicted that the finite sized grains were uniformly distributed on the surface and AFM micrographs revealed roughness of the film. The electrical resistivity measured using four-point probe showed that the film deposited using d.c. magnetron sputtering has lower resistivity of ∼13 cm than the film deposited using e-beam evaporation technique, i.e. ∼60 cm. The hardness of Ti films deposited using d.c. magnetron sputtering has lower value (∼7.9 GPa) than the film deposited using e-beam technique (∼9.4 GPa).

  11. The structure of Cu-Al films prepared by unbalanced DC magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Musil, J.; Bell, A.J. [Czech Acad. of Sci., Prague (Czech Republic). Inst. of Phys.; Chepera, M.; Zeman, J. [Military Technical Institute, PO Box 574, 602 00 (Czech Republic)

    1997-11-25

    Recently, the formation of nanostructured and amorphous materials has been the focus of intense research owing to interest from a basic scientific point of view and their potential technological value. This paper reports on the variation in, and control of, the structure of Cu-Al films prepared in a state-of-the-art unbalanced DC magnetron sputtering system. The structure is shown to be considerably influenced by ion bombardment during growth with both the energy and ratio of impinging ions: arriving atoms playing dominant roles. In addition, the addition of different quantities of Al to the thin film is shown to have a dramatic impact on the structure. The conditions under which nanocrystalline Cu-Al films can be prepared are given. The films were deposited by the magnetron sputter ion plating (MSIP) process using negative substrate biases up to 1000 V and at different argon pressures down to 0.04 Pa. The structure of the films were determined from XRD analyses. An attempt to correlate obtained XRD spectra with the structure of the film is suggested. The resistivities of the films were measured using the four-point probe method, whilst the content of Al was determined from EDX measurements. (orig.) 15 refs.

  12. Aluminum oxide films deposited in low pressure conditions by reactive pulsed dc magnetron sputtering

    CERN Document Server

    Seino, T

    2002-01-01

    The reactive pulsed dc sputtering technique is widely used for the deposition of oxide films. The operating pressure for sputtering is commonly above 0.13 Pa. In this study, however, aluminum oxide (alumina) films were deposited at operating pressures from 0.06 to 0.4 Pa using a sputtering system equipped with a scanning magnetron cathode and a pulsed dc power supply. The pulsed dc power was found to be useful not only to reduce arcing, but also to sustain the discharge at low pressure. The electrical breakdown field, intrinsic stress, O/Al ratio, refractive index, and surface roughness were investigated. Both a low intrinsic stress and an O/Al ratio around the stoichiometry were required to get the film having a high breakdown field. A low operating pressure of 0.1 Pa was found to provide the necessary stress and O/Al ratio targets. A 50-nm-thick alumina film having a maximum breakdown field of 7.4 MV/cm was obtained.

  13. ITO films for antireflective and antistatic tube coatings prepared by d.c. magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Loebl, H.P. [Philips Res. Labs., Aachen (Germany); Huppertz, M. [Philips Res. Labs., Aachen (Germany); Mergel, D. [University GH Essen, Fachbereich 7, Physik, D-45117, Essen (Germany)

    1996-07-01

    A reactive d.c. magnetron sputtering process with relatively high oxygen flow suitable for antireflective and antistatic (ARAS) coatings on display tubes is described. The sputtering conditions and their influence on optical, structural and electrical properties of indium tin oxide (ITO) films are discussed and compared with other ITO sputtering processes from a metallic target. Emphasis is placed on the relation between microstructure, defect structure and conductivity, and on the determination of the optimal process conditions for obtaining fine-grained films for optical applications that can withstand the 460 C heat treatment during tube assembly. As an example, a simple three-layer broadband ARAS coating is investigated, consisting of a transparent conductive ITO layer, a TiO{sub 2} layer and a SiO{sub 2} layer on top. (orig.)

  14. Operational limit of a planar DC magnetron cluster source due to target erosion

    Energy Technology Data Exchange (ETDEWEB)

    Rai, A. [University of Erlangen–Nuernberg, Institute of Science and Technology of Metals, Martensstrasse 5, D-91058 Erlangen (Germany); Mutzke, A. [Max-Planck-Institute of Plasmaphysics, EURATOM Association, D-17491 Greifswald (Germany); Bandelow, G., E-mail: gstoppa@ipp.mpg.de [Max-Planck-Institute of Plasmaphysics, EURATOM Association, D-17491 Greifswald (Germany); Schneider, R.; Ganeva, M. [Institute of Physics, Ernst-Moritz-Arndt-University Greifswald, Felix-Hausdorff-Str. 6, D-17489 Greifswald (Germany); Pipa, A.V. [Leibniz Institute for Plasma Science and Technology (INP Greifswald), Felix-Hausdorff-Str. 2, D-17489 Greifswald (Germany); Hippler, R. [Institute of Physics, Ernst-Moritz-Arndt-University Greifswald, Felix-Hausdorff-Str. 6, D-17489 Greifswald (Germany)

    2013-12-01

    The binary collision-based two dimensional SDTrimSP-2D model has been used to simulate the erosion process of a Cu target and its influence on the operational limit of a planar DC magnetron nanocluster source. The density of free metal atoms in the aggregation region influences the cluster formation and cluster intensity during the target lifetime. The density of the free metal atoms in the aggregation region can only be predicted by taking into account (i) the angular distribution of the sputtered flux from the primary target source and (ii) relative downwards shift of the primary source of sputtered atoms during the erosion process. It is shown that the flux of the sputtered atoms smoothly decreases with the target erosion.

  15. Synthesis and characterization of DC magnetron sputtered nano structured molybdenum thin films

    Science.gov (United States)

    Rondiya, S. R.; Rokade, A. V.; Jadhavar, A. A.; Pandharkar, S. M.; Kulkarni, R. R.; Karpe, S. D.; Diwate, K. D.; Jadkar, S. R.

    2016-04-01

    Molybdenum (Mo) thin films were deposited on corning glass (#7059) substrates using DC magnetron sputtering system. The effect of substrate temperature on the structural, morphology and topological properties have been investigated. Films were characterized by variety of techniques such as low angle x-ray diffraction (low angle XRD), field emission scanning electron microscopy (FE-SEM), atomic force microscopy (AFM). The low angle XRD analysis revealed that the synthesized Mo films are nanocrystalline having cubic crystal structure with (110) preferential orientation. The microstructure of the deposited Mo thin films observed with FE-SEM images indicated that films are homogeneous and uniform with randomly oriented leaf shape morphology. The AFM analysis shows that with increase in substrate temperature the rms roughness of Mo films increases. The obtained results suggest that the synthesized nanostructured Mo thin films have potential application as a back contact material for high efficiency solar cells like CdTe, CIGS, CZTS etc.

  16. Effects of Annealing on TiN Thin Film Growth by DC Magnetron Sputtering

    Directory of Open Access Journals (Sweden)

    Azadeh Jafari

    2014-07-01

    Full Text Available We have reviewed the deposition of titanium nitride (TiN thin films on stainless steel substrates by a DC magnetron sputtering method and annealing at different annealing temperatures of 500, 600, and 700°C for 120 min in nitrogen/argon atmospheres. Effects of annealing temperatures on the structural and the optical properties of TiN films were investigated using X-ray diffraction (XRD, atomic force microscope (AFM, field emission scanning electron microscopy (FESEM, and UV-VIS spectrophotometer. Our experimental studies reveal that the annealing temperature appreciably affected the structures, crystallite sizes, and reflection of the films. By increasing the annealing temperature to 700°C crystallinity and reflection of the film increase. These results suggest that annealed TiN films can be good candidate for tokamak first wall due to their structural and optical properties.

  17. Plasma potential of a moving ionization zone in DC magnetron sputtering

    Science.gov (United States)

    Panjan, Matjaž; Anders, André

    2017-02-01

    Using movable emissive and floating probes, we determined the plasma and floating potentials of an ionization zone (spoke) in a direct current magnetron sputtering discharge. Measurements were recorded in a space and time resolved manner, which allowed us to make a three-dimensional representation of the plasma potential. From this information we could derive the related electric field, space charge, and the related spatial distribution of electron heating. The data reveal the existence of strong electric fields parallel and perpendicular to the target surface. The largest E-fields result from a double layer structure at the leading edge of the ionization zone. We suggest that the double layer plays a crucial role in the energization of electrons since electrons can gain several 10 eV of energy when crossing the double layer. We find sustained coupling between the potential structure, electron heating, and excitation and ionization processes as electrons drift over the magnetron target. The brightest region of an ionization zone is present right after the potential jump, where drifting electrons arrive and where most local electron heating occurs. The ionization zone intensity decays as electrons continue to drift in the Ez × B direction, losing energy by inelastic collisions; electrons become energized again as they cross the potential jump. This results in the elongated, arrowhead-like shape of the ionization zone. The ionization zone moves in the -Ez × B direction from which the to-be-heated electrons arrive and into which the heating region expands; the zone motion is dictated by the force of the local electric field on the ions at the leading edge of the ionization zone. We hypothesize that electron heating caused by the potential jump and physical processes associated with the double layer also apply to magnetrons at higher discharge power, including high power impulse magnetron sputtering.

  18. Optical properties of diamond like carbon films containing copper, grown by high power pulsed magnetron sputtering and direct current magnetron sputtering: Structure and composition effects

    Energy Technology Data Exchange (ETDEWEB)

    Meškinis, Š., E-mail: sarunas.meskinis@ktu.lt; Čiegis, A.; Vasiliauskas, A.; Šlapikas, K.; Tamulevičius, T.; Tamulevičienė, A.; Tamulevičius, S.

    2015-04-30

    In the present study chemical composition, structure and optical properties of hydrogenated diamond like carbon films containing copper (DLC:Cu films) deposited by reactive magnetron sputtering were studied. Different modes of deposition — direct current (DC) sputtering and high power pulsed magnetron sputtering (HIPIMS) as well as two configurations of the magnetron magnetic field (balanced and unbalanced) were applied. X-ray diffractometry, Raman scattering spectroscopy, energy-dispersive X-ray spectroscopy and atomic force microscopy were used to study the structure and composition of the films. It was shown that by using HIPIMS mode contamination of the cathode during the deposition of DLC:Cu films can be suppressed. In all cases oxygen atomic concentration in the films was in 5–10 at.% range and it increased with the copper atomic concentration. The highest oxygen content was observed in the films deposited employing low ion/neutral ratio balanced DC magnetron sputtering process. According to the analysis of the parameters of Raman scattering spectra, sp{sup 3}/sp{sup 2} bond ratio decreased with the increase of Cu atomic concentration in the DLC films. Clear dependence of the extinction, absorbance and reflectance spectra on copper atomic concentration in the films was observed independently of the method of deposition. Surface plasmon resonance effect was observed only when Cu atomic concentration in DLC:Cu film was at least 15 at.%. The maximum of the surface plasmon resonance peak of the absorbance spectra of DLC:Cu films was in 600–700 nm range and redshifted with the increase of Cu amount. The ratio between the intensities of the plasmonic peak and hydrogenated amorphous carbon related peak at ~ 220 nm both in the extinction and absorbance spectra as well as peak to background ratio of DLC:Cu films increased linearly with Cu amount in the investigated 0–40 at.% range. Reflectance of the plasmonic DLC:Cu films was in 30–50% range that could be

  19. Surface treatment effect on Si (111) substrate for carbon deposition using DC unbalanced magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Aji, A. S., E-mail: aji.ravazes70@gmail.com; Sahdan, M. F.; Hendra, I. B.; Dinari, P.; Darma, Y. [Quantum Semiconductor and Devices Lab., Physics of Material Electronics Research Division, Department of Physics, Institut Teknologi Bandung (Indonesia)

    2015-04-16

    In this work, we studied the effect of HF treatment in silicon (111) substrate surface for depositing thin layer carbon. We performed the deposition of carbon by using DC Unbalanced Magnetron Sputtering with carbon pallet (5% Fe) as target. From SEM characterization results it can be concluded that the carbon layer on HF treated substrate is more uniform than on substrate without treated. Carbon deposition rate is higher as confirmed by AFM results if the silicon substrate is treated by HF solution. EDAX characterization results tell that silicon (111) substrate with HF treatment have more carbon fraction than substrate without treatment. These results confirmed that HF treatment on silicon Si (111) substrates could enhance the carbon deposition by using DC sputtering. Afterward, the carbon atomic arrangement on silicon (111) surface is studied by performing thermal annealing process to 900 °C. From Raman spectroscopy results, thin film carbon is not changing until 600 °C thermal budged. But, when temperature increase to 900 °C, thin film carbon is starting to diffuse to silicon (111) substrates.

  20. RP and RQA Analysis for Floating Potential Fluctuations in a DC Magnetron Sputtering Plasma

    Science.gov (United States)

    Sabavath, Gopikishan; Banerjee, I.; Mahapatra, S. K.

    2016-04-01

    The nonlinear dynamics of a direct current magnetron sputtering plasma is visualized using recurrence plot (RP) technique. RP comprises the recurrence quantification analysis (RQA) which is an efficient method to observe critical regime transitions in dynamics. Further, RQA provides insight information about the system’s behavior. We observed the floating potential fluctuations of the plasma as a function of discharge voltage by using Langmuir probe. The system exhibits quasi-periodic-chaotic-quasi-periodic-chaotic transitions. These transitions are quantified from determinism, Lmax, and entropy of RQA. Statistical investigations like kurtosis and skewness also studied for these transitions which are in well agreement with RQA results.

  1. Structural, electrical, and optical properties of diamondlike carbon films deposited by dc magnetron sputtering

    Science.gov (United States)

    Broitman, E.; Lindquist, O. P. A.; Hellgren, N.; Hultman, L.; Holloway, B. C.

    2003-11-01

    The electrical and optical properties of diamondlike carbon films deposited by direct current magnetron sputtering on Si substrates at room temperature have been measured as a function of the ion energy (Eion) and ion-to-carbon flux (Jion/JC). The results show that, in the ranges of 5 eV<=Eion<=85 eV and 1.1<=Jion/JC<=6.8, the presence of defective graphite formed by subplanted C and Ar atoms, voids, and the surface roughness, are the dominant influences on the resistivity and optical absorption.

  2. DC-Compensated Current Transformer †

    Science.gov (United States)

    Ripka, Pavel; Draxler, Karel; Styblíková, Renata

    2016-01-01

    Instrument current transformers (CTs) measure AC currents. The DC component in the measured current can saturate the transformer and cause gross error. We use fluxgate detection and digital feedback compensation of the DC flux to suppress the overall error to 0.15%. This concept can be used not only for high-end CTs with a nanocrystalline core, but it also works for low-cost CTs with FeSi cores. The method described here allows simultaneous measurements of the DC current component. PMID:26805830

  3. Direct current magnetron sputter-deposited ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Hoon, Jian-Wei [Faculty of Engineering, Multimedia University, Persiaran Multimedia, 63100 Cyberjaya, Selangor (Malaysia); Chan, Kah-Yoong, E-mail: kychan@mmu.edu.my [Faculty of Engineering, Multimedia University, Persiaran Multimedia, 63100 Cyberjaya, Selangor (Malaysia); Krishnasamy, Jegenathan; Tou, Teck-Yong [Faculty of Engineering, Multimedia University, Persiaran Multimedia, 63100 Cyberjaya, Selangor (Malaysia); Knipp, Dietmar [School of Engineering and Science, Jacobs University Bremen, 28759 Bremen (Germany)

    2011-01-15

    Zinc oxide (ZnO) is a very promising electronic material for emerging transparent large-area electronic applications including thin-film sensors, transistors and solar cells. We fabricated ZnO thin films by employing direct current (DC) magnetron sputtering deposition technique. ZnO films with different thicknesses ranging from 150 nm to 750 nm were deposited on glass substrates. The deposition pressure and the substrate temperature were varied from 12 mTorr to 25 mTorr, and from room temperature to 450 deg. C, respectively. The influence of the film thickness, deposition pressure and the substrate temperature on structural and optical properties of the ZnO films was investigated using atomic force microscopy (AFM) and ultraviolet-visible (UV-Vis) spectrometer. The experimental results reveal that the film thickness, deposition pressure and the substrate temperature play significant role in the structural formation and the optical properties of the deposited ZnO thin films.

  4. Decorative black TiCxOy film fabricated by DC magnetron sputtering without importing oxygen reactive gas

    Science.gov (United States)

    Ono, Katsushi; Wakabayashi, Masao; Tsukakoshi, Yukio; Abe, Yoshiyuki

    2016-02-01

    Decorative black TiCxOy films were fabricated by dc (direct current) magnetron sputtering without importing the oxygen reactive gas into the sputtering chamber. Using a ceramic target of titanium oxycarbide (TiC1.59O0.31), the oxygen content in the films could be easily controlled by adjustment of total sputtering gas pressure without remarkable change of the carbon content. The films deposited at 2.0 and 4.0 Pa, those are higher pressure when compared with that in conventional magnetron sputtering, showed an attractive black color. In particular, the film at 4.0 Pa had the composition of TiC1.03O1.10, exhibited the L* of 41.5, a* of 0.2 and b* of 0.6 in CIELAB color space. These values were smaller than those in the TiC0.29O1.38 films (L* of 45.8, a* of 1.2 and b* of 1.2) fabricated by conventional reactive sputtering method from the same target under the conditions of gas pressure of 0.3 Pa and optimized oxygen reactive gas concentration of 2.5 vol.% in sputtering gas. Analysis of XRD and XPS revealed that the black film deposited at 4.0 Pa was the amorphous film composed of TiC, TiO and C. The adhesion property and the heat resisting property were enough for decorative uses. This sputtering process has an industrial advantage that the decorative black coating with color uniformity in large area can be easily obtained by plain operation because of unnecessary of the oxygen reactive gas importing which is difficult to be controlled uniformly in the sputtering chamber.

  5. Dynamic phase-control of a rising sun magnetron using modulated and continuous current

    Energy Technology Data Exchange (ETDEWEB)

    Fernandez-Gutierrez, Sulmer, E-mail: sulmer.a.fernandez.gutierrez@intel.com [Intel Corporation, 2111 NE 25th Ave, Hillsboro, Oregon 97214 (United States); Browning, Jim [Department of Electrical and Computer Engineering, Boise State University, Boise, Idaho 83725 (United States); Lin, Ming-Chieh [Department of Electrical and Biomedical Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Smithe, David N. [Tech-X Corporation, 5621 Arapahoe Ave, Boulder, Colorado 80303 (United States); Watrous, Jack [Confluent Sciences, LLC, Albuquerque, New Mexico 87111 (United States)

    2016-01-28

    Phase-control of a magnetron is studied via simulation using a combination of a continuous current source and a modulated current source. The addressable, modulated current source is turned ON and OFF at the magnetron operating frequency in order to control the electron injection and the spoke phase. Prior simulation work using a 2D model of a Rising Sun magnetron showed that the use of 100% modulated current controlled the magnetron phase and allowed for dynamic phase control. In this work, the minimum fraction of modulated current source needed to achieve a phase control is studied. The current fractions (modulated versus continuous) were varied from 10% modulated current to 100% modulated current to study the effects on phase control. Dynamic phase-control, stability, and start up time of the device were studied for all these cases showing that with 10% modulated current and 90% continuous current, a phase shift of 180° can be achieved demonstrating dynamic phase control.

  6. Characterization of amorphous and nanocomposite Nb–Si–C thin films deposited by DC magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Nedfors, Nils, E-mail: nils.nedfors@kemi.uu.se [Department of Chemistry, The Ångström Laboratory, Uppsala University, SE-751 21 Uppsala (Sweden); Tengstrand, Olof [Thin Film Physics Division, Department of Physics, Chemistry and Biology (IFM), Linköping University, SE-581 83 Linköping (Sweden); Flink, Axel [Thin Film Physics Division, Department of Physics, Chemistry and Biology (IFM), Linköping University, SE-581 83 Linköping (Sweden); Impact Coatings AB, Westmansgatan 29, SE-582-16 Linköping (Sweden); Eklund, Per; Hultman, Lars [Thin Film Physics Division, Department of Physics, Chemistry and Biology (IFM), Linköping University, SE-581 83 Linköping (Sweden); Jansson, Ulf [Department of Chemistry, The Ångström Laboratory, Uppsala University, SE-751 21 Uppsala (Sweden)

    2013-10-31

    Two series of Nb–Si–C thin films of different composition have been deposited using DC magnetron sputtering. In the first series the carbon content was kept at about 55 at.% while the Si/Nb ratio was varied and in the second series the C/Nb ratio was varied instead while the Si content was kept at about 45 at.%. The microstructure is strongly dependent on Si content and Nb–Si–C films containing more than 25 at.% Si exhibit an amorphous structure as determined by X-ray diffraction. Transmission electron microscopy, however, induces crystallisation during analysis, thus obstructing a more detailed analysis of the amorphous structure. X-ray photo-electron spectroscopy suggests that the amorphous films consist of a mixture of chemical bonds such as Nb–Si, Nb–C, and Si–C. The addition of Si results in a hardness decrease from 22 GPa for the binary Nb–C film to 18 – 19 GPa for the Si-containing films, while film resistivity increases from 211 μΩcm to 3215 μΩcm. Comparison with recently published results on DC magnetron sputtered Zr–Si–C films, deposited in the same system using the same Ar-plasma pressure, bias, and a slightly lower substrate temperature (300 °C instead of 350 °C), shows that hardness is primarily dependent on the amount of Si–C bonds rather than type of transition metal. The reduced elastic modulus on the other hand shows a dependency on the type of transition metal for the films. These trends for the mechanical properties suggest that high wear resistant (high H/E and H{sup 3}/E{sup 2} ratio) Me–Si–C films can be achieved by appropriate choice of film composition and transition metal. - Highlights: • Si reduces crystallinity, amorphous structure for films containing > 25 at.% Si. • Electron beam induced crystallization during transmission electron microscopy. • Hardness and resistivity are primarily dependent on the relative amount of C–Si bonds.

  7. MgB{sub 2} superconducting thin films sequentially fabricated using DC magnetron sputtering and thermionic vacuum arc method

    Energy Technology Data Exchange (ETDEWEB)

    Okur, S. [Physics Department, Izmir Institute of Technology (Turkey)], E-mail: salihokur@iyte.edu.tr; Kalkanci, M. [Material Science Program, Izmir Institute of Technology (Turkey); Pat, S.; Ekem, N.; Akan, T. [Physics Department, Osmangazi University (Turkey); Balbag, Z. [Department of Science and Mathematics Education, Osmangazi University (Turkey); Musa, G. [Plasma and Radiation, National Institute for Physics of Laser (Romania); Tanoglu, M. [Mechanical Engineering Department, Izmir Institute of Technology (Turkey)

    2007-11-01

    In this work, we discuss fabrication and characterization of MgB{sub 2} thin films obtained by sequential deposition and annealing of sandwich like Mg/B/Mg thin films on glass substrates. Mg and B films were prepared using DC magnetron sputtering and thermionic vacuum arc techniques, respectively. The MgB{sub 2} thin films showed superconducting critical transition at 33 K after annealing at 650 deg. C.

  8. Studies on Nanostructure Aluminium Thin Film Coatings Deposited using DC magnetron Sputtering Process

    Science.gov (United States)

    Singh M, Muralidhar; G, Vijaya; MS, Krupashankara; Sridhara, B. K.; Shridhar, T. N.

    2016-09-01

    Nanostructured thin film metallic coatings has become an area of intense research particularly in applications related solar, sensor technologies and many other optical applications such as laser windows, mirrors and reflectors. Thin film metallic coatings were deposited using DC magnetron sputtering process. The deposition rate was varied to study its influence on optical behavior of Aluminum thin films at a different argon flow rate. Studies on the optical response of these nanostructure thin film coatings were characterized using UV-VIS-NIR spectrophotometer with integrating sphere in the wavelength range of (250-2500nm) and Surface morphology were carried out using atomic force microscope with roughness ranging from 2 to 20nm and thickness was measured using Dektak measuring instrument. The reflection behavior of aluminium coatings on polycarbonate substrates has been evaluated. UV-VIS-NIR Spectrophotometer analysis indicates higher reflectance of 96% for all the films in the wavelength range of 250 nm to 2500 nm. Nano indentation study revealed that there was a considerable change in hardness values of the films prepared at different conditions.

  9. Low friction coefficient coatings Ni-Cr by magnetron sputtering, DC

    Energy Technology Data Exchange (ETDEWEB)

    Morales-Hernandez, J.; Mandujano-Ruiz, A.; Torres-Gonzalez, J.; Espinosa-Beltran, F. J.; Herrera-Hernandez, H.

    2015-07-01

    Magnetron Sputter Deposition technique with DC was used for the deposition of Ni-Cr coatings on AISI 316 SS like substrate. The cathode with a nominal composition Ni-22 at% Cr was prepared by Mechanical Alloying (MA) technique, with a maximum milling time of 16 hours and, with a high energy SPEX 8000 mill. The coatings were made under Argon atmosphere at room temperature with a power of 100 W at different times of growth. Chemical composition, microstructure, topography, nano hardness and wear of the coatings were evaluated using the techniques of microanalysis by energy dispersive X-ray analyzer (EDAX), X-Ray Diffraction (XRD), Atomic Force Microscopy (AFM), Nano-indentation and pin-on-Disk, respectively. After milling, was not detected contamination in the mixtures. XRD analysis revealed that the microstructure of the Ni-Cr alloy was maintained in the coatings with respect to MA powders, with some degree of recrystallization. Nano hardness values were in the order of 8.8 GPa with a Youngs modulus of 195 GPa. The adhesion of the films was evaluated according to their resistance to fracture when these were indented at different loads using Vickers microhardness. The wear test results showed a decrease in the friction coefficient with respect to the increase of thickness films, getting a minimum value of 0.08 with a thickness of 1 μm and which correspond with the maximum growing time. (Author)

  10. Electrical and optical properties of reactive DC magnetron sputtered silver oxide thin films: role of oxygen

    Energy Technology Data Exchange (ETDEWEB)

    Kumar Barik, Ullash; Srinivasan, S.; Nagendra, C.L.; Subrahmanyam, A

    2003-04-01

    Silver oxide thin films have been prepared on soda lime glass substrates at room temperature (300 K) by reactive DC Magnetron sputtering technique using pure silver metal target; the oxygen flow rates have been varied in the range 0.00-2.01 sccm. The X-ray diffraction data on these films show a systematic change from metallic silver to silver (sub) oxides. The electrical resistivity increases with increasing oxygen flow. The films show a p-type behavior (by both Hall and Seebeck measurements) for the oxygen flow rates of 0.54, 1.09 and 1.43 sccm. The refractive index of the films (at 632.8 nm) decreases with increasing oxygen content and is in the range 1.167-1.145, whereas the p-type films show a higher refractive index (1.186-1.204). The work function of these silver oxide films has been measured by Kelvin Probe technique. The results, in specific, the p-type conductivity in the silver oxide films, have been explained on the basis of the theory of partial ionic charge proposed by Sanderson.

  11. Preparation and Characterization of NiO Thin Films by DC Reactive Magnetron Sputtering

    Directory of Open Access Journals (Sweden)

    Y. Ashok Kumar Reddy

    2012-12-01

    Full Text Available Nickel oxide (NiO thin films were successfully deposited on Corning 7059 glass substrates at different oxygen partial pressures in the range of 1 × 10 – 4 to 9 × 10 – 4 mbar using dc reactive magnetron sputtering technique. Structural properties of NiO films showed polycrystalline nature with cubic structure along (220 orientation. The optical transmittance and band gap values of the films increased with increasing the oxygen partial pressure from 1 × 10 – 4 to 5 × 10 – 4 mbar and decreased on further increasing the oxygen partial pressure. Using Scanning Electron Microscopy (SEM, fine grains were observed at oxygen partial pressure of 5 × 10 – 4 mbar. The film resistivity decreases from 90.48 to 13.24 Ω cm with increase in oxygen partial pressure to 5 × 10 – 4 mbar and then increased on further increasing the oxygen partial pressure.

  12. Deposition of TiN/CrN hard superlattices by reactive d.c. magnetron sputtering

    Indian Academy of Sciences (India)

    Harish C Barshilia; K S Rajam

    2003-02-01

    Multilayer superlattice coatings of TiN/CrN were deposited on silicon substrates using a reactive d.c. magnetron sputtering process. Superlattice period, also known as modulation wavelength (), was controlled by controlling the dwell time of the substrate underneath Ti and Cr targets. X-ray diffraction (XRD), nanoindentation and atomic force microscopy (AFM) were used to characterize the films. The XRD data showed 1st and 2nd order satellite reflections along the principal reflection for films having 132 Å $\\geq \\Lambda \\geq$ 84 Å, thus confirming the formation of superlattice. The multilayer coatings exhibited hardness () as high as 3200 kg/mm2, which is 2 times the rule-of-mixtures value (i.e. $H_{TiN}$ = 2200 kg/mm2 and $H_{CrN}$ = 1000 kg/mm2). Detailed investigations on the effects of various process parameters indicated that hardness of the superlattice coatings was affected not only by modulation wavelength but also by nitrogen partial pressure and ion bombardment during deposition.

  13. Aluminium-induced crystallization of amorphous silicon films deposited by DC magnetron sputtering on glasses

    Energy Technology Data Exchange (ETDEWEB)

    Kezzoula, F., E-mail: kezzoula@usa.com [UDTS 2Bd Frantz Fanon 7 merveilles Algiers (Algeria); Laboratory of Materials, Mineral and Composite (LMMC), Boumerdes University (Algeria); Hammouda, A. [UPR CNRS 3079 CEMHTI - 1D Avenue de la Recherche Scientifique, 45071 Orleans Cedex 2 (France); Equipe Couches Minces, Laboratoire de Physique des Materiaux, Faculte de Physique, USTHB, Algiers (Algeria); Universite d' Orleans, 45067 Orleans Cedex 2 (France); Kechouane, M. [Equipe Couches Minces, Laboratoire de Physique des Materiaux, Faculte de Physique, USTHB, Algiers (Algeria); Simon, P. [UPR CNRS 3079 CEMHTI - 1D Avenue de la Recherche Scientifique, 45071 Orleans Cedex 2 (France); Universite d' Orleans, 45067 Orleans Cedex 2 (France); Abaidia, S.E.H. [Laboratory of Materials, Mineral and Composite (LMMC), Boumerdes University (Algeria); Keffous, A. [UDTS 2Bd Frantz Fanon 7 merveilles Algiers (Algeria); Cherfi, R. [Equipe Couches Minces, Laboratoire de Physique des Materiaux, Faculte de Physique, USTHB, Algiers (Algeria); Menari, H.; Manseri, A. [UDTS 2Bd Frantz Fanon 7 merveilles Algiers (Algeria)

    2011-09-15

    Amorphous silicon (a-Si) and hydrogenated amorphous silicon (a-Si:H) films were deposited by DC magnetron sputtering technique with argon and hydrogen plasma mixture on Al deposited by thermal evaporation on glass substrates. The a-Si/Al and a-Si:H/Al thin films were annealed at different temperatures ranging from 250 to 550 deg. C during 4 h in vacuum-sealed bulb. The effects of annealing temperature on optical, structural and morphological properties of as-grown as well as the vacuum-annealed a-Si/Al and a-Si:H/Al thin films are presented in this contribution. The averaged transmittance of a-Si:H/Al film increases upon increasing the annealing temperature. XRD measurements clearly evidence that crystallization is initiated at 450 deg. C. The number and intensity of diffraction peaks appearing in the diffraction patterns are more important in a-Si:H/Al than that in a-Si/Al layers. Results show that a-Si:H films deposited on Al/glass crystallize above 450 deg. C and present better crystallization than the a-Si layers. The presence of hydrogen induces an improvement of structural properties of poly-Si prepared by aluminium-induced crystallization (AIC).

  14. Study on ZnO:Al (ZAO) films by DC reaction magnetron sputtering

    Institute of Scientific and Technical Information of China (English)

    裴志亮; 孙超; 谭明晖; 关德慧; 肖金泉; 黄荣芳; 闻立时

    2001-01-01

    The high quality ZnO: A1 films were successfully produced by DC reaction magnetron sputtering technology. The Al-doping effect on electrical and optical properties and its scattering mechanism are discussed in detail. The analyses of X-ray diffractometer (XRD), X-ray photoelectron spectroscopy(XPS) and high resolution Auger electron spectroscopy (AES) show that Al2O3 could be effectively removed by controlling oxygen flow and Al-doping concentration during deposition of ZnO: Al films. Zn, Al and oxygen elements are well distributed through the films. For highly degenerated ZnO:A1 semi-conductive thin films, the theoretical and experimental results reveal that the ionized impurity. scattering dominates the Hall mobility in the films in the low-temperature range, while the lattice vibration scattering becomes a major scattering mechanism in the high-temperature range. The grain boundary scattering only plays a major role in the ZAO films with small grain size (as compared to the electron mean free path). The photoelectric properties of ZAO films show that it has low resistivity ( ~ 5 × 10-4 Ωcm), and the transmittance in visible range and the reflectance in IR region are above 80% and 60%, respectively.

  15. Photoelectric properties of ITO thin films deposited by DC magnetron sputtering*

    Institute of Scientific and Technical Information of China (English)

    Liu Wei; Cheng Shuying

    2011-01-01

    As anti-reflecting thin films and transparent electrodes of solar cells, indium tin oxide (ITO) thin films were prepared on glass substrates by DC magnetron sputtering process. The main sputtering conditions were sputtering power, substrate temperature and work pressure. The influence of the above sputtering conditions on the transmittance and conductivity of the deposited ITO films was investigated. The experimental results show that,the transmittance and the resistivity decrease as the sputtering power increases from 30 to 90 W. When the substrate temperature increases from 25 to 150 ℃, the transmittance increases slightly whereas the resistivity decreases. As the work pressure increases from 0.4 to 2.0 Pa, the transmittance decreases and the resistivity increases. When the sputtering power, substrate temperature and work pressure are 30 W, 150 ℃, 0.4 Pa respectively, the ITO thin films exhibit good electrical and optical properties, with resistivity below 10-4 Ω.cm and the transmittance in the visible wave band beyond 80%. Therefore, the ITO thin films are suitable as transparent electrodes of solar cells.

  16. CrN thin films prepared by reactive DC magnetron sputtering for symmetric supercapacitors

    KAUST Repository

    Wei, Binbin

    2016-12-29

    Supercapacitors have been becoming indispensable energy storage devices in micro-electromechanical systems and have been widely studied over the past few decades. Transition metal nitrides with excellent electrical conductivity and superior cycling stability are promising candidates as supercapacitor electrode materials. In this work, we report the fabrication of CrN thin films using reactive DC magnetron sputtering and further their applications for symmetric supercapacitors for the first time. The CrN thin film electrodes fabricated under the deposition pressure of 3.5 Pa show an areal specific capacitance of 12.8 mF cm at 1.0 mA cm and high cycling stability with 92.1% capacitance retention after 20 000 cycles in a 0.5 M HSO electrolyte. Furthermore, our developed CrN//CrN symmetric supercapacitor can deliver a high energy density of 8.2 mW h cm at the power density of 0.7 W cm along with outstanding cycling stability. Thus, the CrN thin films have great potential for application in supercapacitors and other energy storage systems.

  17. Deposition and characterization of TiZrV-Pd thin films by dc magnetron sputtering

    CERN Document Server

    Wang, Jie; Xu, Yan-Hui; Wei, Wei; Fan, Le; Pei, Xiang-Tao; Hong, Yuan-Zhi; Wang, Yong

    2015-01-01

    TiZrV film is mainly applied in the ultra-high vacuum pipe of storage ring. Thin film coatings of palladium which was added onto the TiZrV film to increase the service life of nonevaporable getters and enhance pumping speed for H2, was deposited on the inner face of stainless steel pipes by dc magnetron sputtering using argon gas as the sputtering gas. The TiZrV-Pd film properties were investigated by atomic force microscope (AFM), scanning electron microscope (SEM), X-ray photoelectron spectroscopy (XPS) and X-Ray Diffraction (XRD). The grain size of TiZrV and Pd film were about 0.42~1.3 nm and 8.5~18.25 nm respectively. It was found that the roughness of TiZrV films was small, about 2~4 nm, for Pd film it is large, about 17~19 nm. PP At. % of Pd in TiZrV/Pd films varied from 86.84 to 87.56 according to the XPS test results.

  18. Corrosion resistance of CrN thin films produced by dc magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Ruden, A. [Laboratorio de Física del Plasma, Universidad Nacional de Colombia Sede Manizales, Km. 9 vía al Magdalena, Manizales (Colombia); Laboratorio de Recubrimientos Duros y Aplicaciones Industriales–RDAI, Universidad del Valle, Calle 13 N° 100-00 Ciudadela Meléndez, Cali (Colombia); Departamento de matemáticas, Universidad Tecnológica de Pereira, Pereira (Colombia); Restrepo-Parra, E., E-mail: erestrepopa@unal.edu.co [Laboratorio de Física del Plasma, Universidad Nacional de Colombia Sede Manizales, Km. 9 vía al Magdalena, Manizales (Colombia); Paladines, A.U.; Sequeda, F. [Laboratorio de Recubrimientos Duros y Aplicaciones Industriales–RDAI, Universidad del Valle, Calle 13 N° 100-00 Ciudadela Meléndez, Cali (Colombia)

    2013-04-01

    In this study, the electrochemical behavior of chromium nitride (CrN) coatings deposited on two steel substrates, AISI 304 and AISI 1440, was investigated. The CrN coatings were prepared using a reactive d.c. magnetron sputtering deposition technique at two different pressures (P1 = 0.4 Pa and P2 = 4 Pa) with a mixture of N{sub 2}–Ar (1.5-10). The microstructure and crystallinity of the CrN coatings were investigated using X-ray diffraction. The aqueous corrosion behavior of the coatings was evaluated using two methods. The polarization resistance (Tafel curves) and electrochemical impedance spectra (EIS) in a saline (3.5% NaCl solution) environment were measured in terms of the open-circuit potentials and polarization resistance (R{sub p}). The results indicated that the CrN coatings present better corrosion resistance and R{sub p} values than do the uncoated steel substrates, especially for the coatings produced on the AISI 304 substrates, which exhibited a strong enhancement in the corrosion resistance. Furthermore, better behavior was observed for the coatings produced at lower pressures (0.4 Pa) than those grown at 4 Pa.

  19. Surface morphology of titanium nitride thin films synthesized by DC reactive magnetron sputtering

    Directory of Open Access Journals (Sweden)

    Ţǎlu Ştefan

    2015-03-01

    Full Text Available In this paper the influence of temperature on the 3-D surface morphology of titanium nitride (TiN thin films synthesized by DC reactive magnetron sputtering has been analyzed. The 3-D morphology variation of TiN thin films grown on p-type Si (100 wafers was investigated at four different deposition temperatures (473 K, 573 K, 673 K, 773 K in order to evaluate the relation among the 3-D micro-textured surfaces. The 3-D surface morphology of TiN thin films was characterized by means of atomic force microscopy (AFM and fractal analysis applied to the AFM data. The 3-D surface morphology revealed the fractal geometry of TiN thin films at nanometer scale. The global scale properties of 3-D surface geometry were quantitatively estimated using the fractal dimensions D, determined by the morphological envelopes method. The fractal dimension D increased with the substrate temperature variation from 2.36 (at 473 K to 2.66 (at 673 K and then decreased to 2.33 (at 773 K. The fractal analysis in correlation with the averaged power spectral density (surface yielded better quantitative results of morphological changes in the TiN thin films caused by substrate temperature variations, which were more precise, detailed, coherent and reproducible. It can be inferred that fractal analysis can be easily applied for the investigation of morphology evolution of different film/substrate interface phases obtained using different thin-film technologies.

  20. Dependence of characteristics of LaB6 films on DC magnetron sputtering power

    Institute of Scientific and Technical Information of China (English)

    XU Jing; MIN Guang-hui; HU Li-jie; ZHAO Xiao-hua; YU Hua-shun

    2009-01-01

    Lanthanum hexaboride(LaB6) thin films were deposited on glass substrate by DC magnetron sputtering technology, and the AFM, XRD and scratch tests were used to characterize the deposited films. Influences of sputtering power on the microstructure and the bonding strength between the film and substrate were investigated. AFM observation proves that the dense films are obtained, and the surface roughness is below 4.3 nm. The LaB6 film shows the crystalline structure with the grain less than 100 nm. The XRD pattern identifies that the crystal structure of the films is in accordance with that of bulk LaB6, and the (100) crystal face is dominated. The average grain size decreases firstly and then increases with increasing power, and reaches the minimum of 40 nm when the sputtering power is 44 W. Moreover, the intensity of peaks in XRD pattern increases firstly and decreases afterward with increasing power. When the sputtering power is 50 W, the peak intensity reaches the maximum, showing an intense relationship between the power and crystal structures. The scratch test shows that interface bonding strength of the film/substrate is higher at the power of 44 W than the others, due to the formation of the nanosized crystals and their improved surface energy.

  1. Rapidly switched wettability of titania films deposited by dc magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Shirolkar, Mandar; Abyaneh, Majid Kazemian; Singh, Akanksha; Kulkarni, Sulabha [DST Unit on Nanoscience, Department of Physics, University of Pune (India); Tomer, Anju; Choudhary, Ram; Sathe, Vasant; Phase, Deodatta [UGC-DAE Consortium for Scientific Research Indore Centre, University Campus, Khandwa Road, Indore (India)], E-mail: skk@physics.unipune.ernet.in

    2008-08-07

    Rapid switching (5-15 minutes) in the wettability of titania (TiO{sub 2}) thin films in the anatase phase has been observed after UV irradiation. The film surface becomes superhydrophilic when exposed to UV radiation. The relationship between wettability, thickness and crystallinity of TiO{sub 2} films has been investigated. Amorphous and anatase TiO{sub 2} thin films have been deposited by varying the argon to oxygen gas ratio, using the reactive dc magnetron sputtering technique. It was found that the gas ratio primarily affects thickness, crystallinity, morphology and wettability of the films. The highest contact angle that has been reported so far, namely, 170 deg. -176 deg., has been observed for film thickness varying from 112-500 nm in the case of pristine anatase TiO{sub 2} films. On the other hand, amorphous films show a variation in the contact angle from 120 deg. to 140 deg. as the thickness varied from 70 to 145 nm. The deposition is extremely robust and has an ultralow hysteresis in the contact angle. The films exhibit a morphology similar to the lotus leaf and the water hyacinth.

  2. Growth characteristics of MoS2 coatings prepared by unbalanced bipolar DC magnetron sputtering

    Institute of Scientific and Technical Information of China (English)

    WANG Ji-hui; XIA Yang; E.Wieers; L.M.Stals; J.P.Celis

    2005-01-01

    MoS2 coatings were prepared by unbalanced bipolar DC magnetron sputtering under different argon pressures and for different deposition times, and the structure and morphology of MoS2 coatings were determined and observed respectively by X-ray diffractometry and scanning electron microscopy. The results show that at lower argon pressures of 0.15Pa and 0.40Pa, MoS2 coatings are formed with the (002) basal plane parallel to the surface, whereas the coating deposited at the argon pressure above 0.60Pa has the (002) basal plane perpendicular to the surface. Two stages can be classified for the formation of MoS2 coating. At the initial stage of coating formation, the (002) basal plane with S-Mo-S layer structure grows on the substrate whatever the argon pressure is. And then the coating under 0.40Pa argon pressure still grows with (002) laminate structure, but the coatings under 0.88Pa and 1.60Pa argon pressures turn to grow with the mixed basal and edge orientations. The morphology and structure of MoS2 coatings are highly related to their growth rate and the energy of sputtered particles.

  3. High-current electron gun with a planar magnetron integrated with an explosive-emission cathode

    Science.gov (United States)

    Kiziridi, P. P.; Ozur, G. E.

    2017-05-01

    A new high-current electron gun with plasma anode and explosive-emission cathode integrated with planar pulsed powered magnetron is described. Five hundred twelve copper wires 1 mm in diameter and 15 mm in height serve as emitters. These emitters are installed on stainless steel disc (substrate) with 3-mm distance between them. Magnetron discharge plasma provides increased ion density on the periphery of plasma anode formed by high-current Penning discharge ignited within several milliseconds after starting of the magnetron discharge. The increased on the periphery ion density improves the uniformity of high-current electron beam produced in such an electron gun.

  4. Magnetron theory

    Science.gov (United States)

    Riyopoulos, Spilios

    1996-03-01

    A guiding center fluid theory is applied to model steady-state, single mode, high-power magnetron operation. A hub of uniform, prescribed density, feeds the current spokes. The spoke charge follows from the continuity equation and the incompressibility of the guiding center flow. Included are the spoke self-fields (DC and AC), obtained by an expansion around the unperturbed (zero-spoke charge) flow in powers of ν/V1, ν, and V1 being the effective charge density and AC amplitude. The spoke current is obtained as a nonlinear function of the detuning from the synchronous (Buneman-Hartree, BH) voltage Vs; the spoke charge is included in the self-consistent definition of Vs. It is shown that there is a DC voltage region of width ‖V-Vs‖˜V1, where the spoke width is constant and the spoke current is simply proportional to the AC voltage. The magnetron characteristic curves are ``flat'' in that range, and are approximated by a linear expansion around Vs. The derived formulas differ from earlier results [J. F. Hull, in Cross Field Microwave Devices, edited by E. Okress (Academic, New York, 1961), pp. 496-527] in (a) there is no current cutoff at synchronism; the tube operates well below as well above the BH voltage; (b) the characteristics are single valued within the synchronous voltage range; (c) the hub top is not treated as virtual cathode; and (d) the hub density is not equal to the Brillouin density; comparisons with tube measurements show the best agreement for hub density near half the Brillouin density. It is also shown that at low space charge and low power the gain curve is symmetric relative to the voltage (frequency) detuning. While symmetry is broken at high-power/high space charge magnetron operation, the BH voltage remains between the current cutoff voltages.

  5. Fabrication and characterization of a Ni-Mn-Ga uniaxially textured freestanding film deposited by DC magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Tillier, J., E-mail: jeremy.tillier@grenoble.cnrs.f [Institut Neel/Consortium de Recherche pour l' Emergence de Technologies Avancees, Centre National de la Recherche Scientifique, 25 avenue des Martyrs, BP166, 38042 Grenoble Cedex 9 (France); Bourgault, D.; Barbara, B.; Pairis, S.; Porcar, L.; Chometon, P.; Dufeu, D. [Institut Neel/Consortium de Recherche pour l' Emergence de Technologies Avancees, Centre National de la Recherche Scientifique, 25 avenue des Martyrs, BP166, 38042 Grenoble Cedex 9 (France); Caillault, N.; Carbone, L. [Schneider Electric France, 38TEC/T1, 37 quai Paul Louis Merlin, 38050 Grenoble Cedex 9 (France)

    2010-01-21

    Homogeneous freestanding films have been obtained by the direct current (DC) magnetron sputtering technique using a sacrificial layer. After annealing, the films are crystallized with a strong out-of-plane texture along the (0 2 2) direction. The stoichiometry of the annealed films is close to the target composition and leads to a martensitic transformation around 255 K. The annealed films demonstrate ferromagnetic behavior with a Curie temperature of about 362 K. The magnetization process has been studied on the both states and during the martensitic transition. The saturation magnetizations have been determined by fitting the experimental data with a saturation approach law in the range of 1-5 T. Results show the saturation magnetization of the martensite is around 10% higher than that of the austenite. A model based on intrinsic magnetic properties of each state allowing the description of the magnetization M = f(H, T) of such polycrystalline films during the martensitic transformation is presented. The mass fraction of martensite inside the austenite phase can be determined using this model. The shape memory effect is analyzed both by scanning electron microscopy and by optical microscopy with in situ measurement of the resistance temperature dependence.

  6. EFFECT OF Ar PRESSURE ON STRUCTURAL AND ELECTRICAL PROPERTIES OF Cu FILMS DEPOSITED ON GLASS BY DC MAGNETRON SPUTTERING

    Institute of Scientific and Technical Information of China (English)

    P.Wu; F.P.Wang; L.Q.Pan; Y.Tian; H.Qiu

    2002-01-01

    Cu films with thickness of 630-1300nm were deposited on glass substrates withoutheating by DC magnetron sputtering in pure Ar gas. Ar pressure was controlled to0.5, 1.0 and 1.5Pa respectively. The target voltage was fixed at 500V but the targetcurrent increased from 200 to 1150mA with Ar pressure increasing. X-ray diffrac-tion, scanning electron microscopy and atomic force microscopy were used to observethe structural characterization of the films. The resistivity of the films was measuredusing four-point probe technique. At all the Ar pressures, the Cu films have mixturecrystalline orientations of [111], [200] and [220] in the direction of the film growth.The film deposited at lower pressure shows more [111] orientation while that depositedat higher pressure has more [220] orientation. The amount of larger grains in the filmprepared at 0.5Pa Ar pressure is slightly less than that prepared at 1. 0Pa and 1.5PaAr pressures. The resistivities of the films prepared at three different Ar pressures rep-resent few differences, about 3-4 times of that of bulk material. Besides the depositionrate increases with Ar pressure because of the increase in target current. The contri-bution of the bombardment of energetic reflected Argon atoms to these phenomena isdiscussed.

  7. Preparation and characterization of transparent conducting ZnO:W films by DC magnetron sputtering*

    Institute of Scientific and Technical Information of China (English)

    Zhang Huafu; Yang Shugang; Liu Hanfa; Yuan Changkun

    2011-01-01

    Tungsten-doped zinc oxide (ZnO:W) films with low resistivity and high transmittance were successfully deposited on glass substrates by direct current magnetron sputtering at low temperature. The deposition pressure is varied from 12 to 21 Pa. The X-ray diffraction results show that all of the deposited films are polycrystalline and have a hexagonal structure with a preferred c-axis orientation. The crystallinity, morphologies and resistivity of ZnO:W films greatly depend on deposition pressure while the optical properties including optical transmittance,optical band gap as well as refractive index are not sensitive to deposition pressure. The deposited films with an electrical resistivity as low as 1.5 × 10-4 Ω·cm, sheet resistance of 6.8 Ω/□ and an average transmittance of 91.3% in the visible range were obtained at a deposition pressure of 21 Pa and sputtering power of 130 W.

  8. Low friction coefficient coatings Ni-Cr by magnetron sputtering, DC

    Directory of Open Access Journals (Sweden)

    Morales-Hernández, Jorge

    2015-09-01

    Full Text Available Magnetron Sputter Deposition technique with DC was used for the deposition of Ni-Cr coatings on AISI 316 SS like substrate. The cathode with a nominal composition Ni-22 at% Cr was prepared by Mechanical Alloying (MA technique, with a maximum milling time of 16 hours and, with a high energy SPEX 8000 mill. The coatings were made under Argon atmosphere at room temperature with a power of 100 W at different times of growth. Chemical composition, microstructure, topography, nanohardness and wear of the coatings were evaluated using the techniques of microanalysis by energy dispersive X-ray analyzer (EDAX, X-Ray Diffraction (XRD, Atomic Force Microscopy (AFM, Nano-indentation and pin-on-Disk, respectively. After milling, was not detected contamination in the mixtures. XRD analysis revealed that the microstructure of the Ni-Cr alloy was maintained in the coatings with respect to MA powders, with some degree of recrystallization. Nanohardness values were in the order of 8.8 GPa with a Young’s modulus of 195 GPa. The adhesion of the films was evaluated according to their resistance to fracture when these were indented at different loads using Vickers microhardness. The wear test results showed a decrease in the friction coefficient with respect to the increase of thickness’ films, getting a minimum value of 0.08 with a thickness of 1 μm and which correspond with the maximum growing time.La técnica de Deposición por Chisporroteo Magnético (Magnetron Sputtering con el proceso DC, fue usado para la deposición de los recubrimientos de Ni-Cr sobre acero inoxidable AISI 316 como sustrato. El cátodo con una composición nominal Ni-22 at% Cr fue preparado por la técnica de Aleado Mecánico (AM, con un tiempo máximo de molienda de 16 horas y con un molino de alta energía tipo SPEX 8000. Las películas se realizaron bajo una atmósfera de argón a temperatura ambiente con una potencia de 100 W a diferentes tiempos de crecimiento. La composición qu

  9. Bioactivity response of Ta1-xOx coatings deposited by reactive DC magnetron sputtering.

    Science.gov (United States)

    Almeida Alves, C F; Cavaleiro, A; Carvalho, S

    2016-01-01

    The use of dental implants is sometimes accompanied by failure due to periimplantitis disease and subsequently poor esthetics when soft-hard tissue margin recedes. As a consequence, further research is needed for developing new bioactive surfaces able to enhance the osseous growth. Tantalum (Ta) is a promising material for dental implants since, comparing with titanium (Ti), it is bioactive and has an interesting chemistry which promotes the osseointegration. Another promising approach for implantology is the development of implants with oxidized surfaces since bone progenitor cells interact with the oxide layer forming a diffusion zone due to its ability to bind with calcium which promotes a stronger bond. In the present report Ta-based coatings were deposited by reactive DC magnetron sputtering onto Ti CP substrates in an Ar+O2 atmosphere. In order to assess the osteoconductive response of the studied materials, contact angle and in vitro tests of the samples immersed in Simulated Body Fluid (SBF) were performed. Structural results showed that oxide phases where achieved with larger amounts of oxygen (70 at.% O). More compact and smooth coatings were deposited by increasing the oxygen content. The as-deposited Ta coating presented the most hydrophobic character (100°); with increasing oxygen amount contact angles progressively diminished, down to the lowest measured value, 63°. The higher wettability is also accompanied by an increase on the surface energy. Bioactivity tests demonstrated that highest O-content coating, in good agreement with wettability and surface energy values, showed an increased affinity for apatite adhesion, with higher Ca/P ratio formation, when compared to the bare Ti substrates.

  10. Cu-In-O composite thin films deposited by reactive DC magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Ye Fan [School of Physical Science and Technology and Shenzhen Key Laboratory of Sensor Technologies, Shenzhen University, Shenzhen 518060 (China); Cai Xingmin, E-mail: caixm@szu.edu.c [School of Physical Science and Technology and Shenzhen Key Laboratory of Sensor Technologies, Shenzhen University, Shenzhen 518060 (China); Dai Fuping [Department of Applied Physics, Northwestern Polytechnic University, Xian 710072 (China); Jing Shouyong [Institute of Optoelectronics, Shenzhen University, Shenzhen 518060 (China); Zhang Dongping; Fan Ping; Liu Lijun [School of Physical Science and Technology and Shenzhen Key Laboratory of Sensor Technologies, Shenzhen University, Shenzhen 518060 (China)

    2011-02-01

    Cu-In-O composite thin films were deposited by reactive DC magnetron sputtering at room temperature. The samples were characterized by scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX), X-ray diffraction (XRD), UV/vis spectrophotometer, four-probe measurement and Seebeck effect measurement, etc. The samples contain Cu, In and O. The ratios of Cu to In and O to In increase with increase in O{sub 2} flow rates. The ratio of Cu to In is over 1 and this suggests that Cu is in excess. The obtained Cu-In-O thin films are very possibly made of rhombohedral In{sub 2}O{sub 3} and monoclinic CuO. Transmittance of the films decreases with increase in O{sub 2} flow rate. The decrease in transmittance results from increase in Cu content in the films. The optical band gap of all the samples is estimated to be 4.1-4.4 eV, which is larger than those of In{sub 2}O{sub 3} and CuO. The sheet resistance of the films decreases with increase in O{sub 2} flow rate. Conductivity of the films is a little low, due to the addition of Cu and the poor crystalline quality of the film. The conduction behavior of the films is similar to that of In{sub 2}O{sub 3} and the conduction mechanism of Cu-In-O thin films is through O vacancy. -- Research Highlights: {yields}Cu-In-O composite thin films were fabricated by DC sputtering at room temperature. {yields}The films are made of rhombohedral In{sub 2}O{sub 3} and monoclinic CuO. {yields}The transmittance depends on the Cu content in the film. {yields}The direct optical band gap is around 4.1-4.4eV. {yields}The conducting mechanism is due to oxygen vacancy.

  11. Enhanced Colouration Efficiency of Pulsed DC Magnetron Sputtered WO3 Films Cycled in H2SO4 Electrolyte Solution

    Directory of Open Access Journals (Sweden)

    K. Punitha

    2014-01-01

    Full Text Available In the present investigation, we report on DC power and pulsing frequency induced changes in electrochromic properties of pulsed DC magnetron sputtered WO3 films by intercalating/deintercalating H+ ions from 0.1 M H2SO4 electrolyte solution. The observed efficient colouration ↔ bleaching mechanism of WO3 films confirms the effective electrochromic nature of the films associated with the electrochemical intercalation/deintercalation of H+ ions and electrons into WO3 lattice. The higher optical modulation was observed in the visible region of the optical transmittance spectra of colored and bleached WO3 films. The maximum coloration efficiency of 79 cm2/C was observed the first time for the film deposited at a DC power of 150 W and a pulsing frequency of 25 kHz.

  12. Automated DC Substation Short-Current Evaluation

    Directory of Open Access Journals (Sweden)

    Petr Dohnal

    2004-01-01

    Full Text Available Technical praxis has no easy-to-use standardized method for a DC short-current evaluation. For a correct rating of rectifying blocks (diodes and input and output current-carrying cables is need to know short-current parameters. The current flow in the substation is derived by commutation of rectifying blocks, which define current of transformers and DC part. For evaluating exists a semi empiric formula, that has a delimited relevance to small power range up to 50 kWatts of output power. New way of evaluation of short current is based on simulation of simplified substation model using the capabilities of DYNAST simulation program, or other dynamic equation solver based on numerical method, like Matlab.

  13. A SQUID series array dc current sensor

    Energy Technology Data Exchange (ETDEWEB)

    Beyer, J; Drung, D [Physikalisch-Technische Bundesanstalt (PTB), Abbestrasse 2-12, D-10587 Berlin (Germany)], E-mail: joern.beyer@ptb.de, E-mail: dietmar.drung@ptb.de

    2008-09-15

    Superconducting quantum interference device (SQUID) sensors are used to sense changes in various physical quantities, which can be transformed into changes in the magnetic flux threading the SQUID loop. We have developed a novel SQUID array dc current sensor. The device is based on a series array of identical dc SQUIDs. An input signal current to be measured is coupled tightly but non-uniformly to the SQUID array elements. The input signal coupling to the individual array elements is chosen such that a single-valued, non-periodic overall voltage response is obtained. Flux offsets in the individual SQUIDs which would compromise the sensor voltage response are avoided or can be compensated. We present simulations and experimental results on the SQUID Array for Dc (SQUAD) current sensor current sensor performance. A dc current resolution of <1 nA in a measurement bandwidth of 0-25 Hz is achieved for an input inductance of L{sub In}<3 nH.

  14. Indium-tin oxide films obtained by DC magnetron sputtering for improved Si heterojunction solar cell applications

    Science.gov (United States)

    Gu, Jin-Hua; Si, Jia-Le; Wang, Jiu-Xiu; Feng, Ya-Yang; Gao, Xiao-Yong; Lu, Jing-Xiao

    2015-11-01

    The indium-tin oxide (ITO) film as the antireflection layer and front electrodes is of key importance to obtaining high efficiency Si heterojunction (HJ) solar cells. To obtain high transmittance and low resistivity ITO films by direct-current (DC) magnetron sputtering, we studied the impacts of the ITO film deposition conditions, such as the oxygen flow rate, pressure, and sputter power, on the electrical and optical properties of the ITO films. ITO films of resistivity of 4×10-4 Ω·m and average transmittance of 89% in the wavelength range of 380-780 nm were obtained under the optimized conditions: oxygen flow rate of 0.1 sccm, pressure of 0.8 Pa, and sputtering power of 110 W. These ITO films were used to fabricate the single-side HJ solar cell without an intrinsic a-Si:H layer. However, the best HJ solar cell was fabricated with a lower sputtering power of 95 W, which had an efficiency of 11.47%, an open circuit voltage (Voc) of 0.626 V, a filling factor (FF) of 0.50, and a short circuit current density (Jsc) of 36.4 mA/cm2. The decrease in the performance of the solar cell fabricated with high sputtering power of 110 W is attributed to the ion bombardment to the emitter. The Voc was improved to 0.673 V when a 5 nm thick intrinsic a-Si:H layer was inserted between the (p) a-Si:H and (n) c-Si layer. The higher Voc of 0.673 V for the single-side HJ solar cell implies the excellent c-Si surface passivation by a-Si:H. Project supported by the National High Technology Research and Development Program of China (Grant No. 2011AA050501).

  15. Indium-tin oxide films obtained by DC magnetron sputtering for improved Si heterojunction solar cell applications

    Institute of Scientific and Technical Information of China (English)

    谷锦华; 司嘉乐; 王九秀; 冯亚阳; 郜小勇; 卢景霄

    2015-01-01

    The indium–tin oxide (ITO) film as the antireflection layer and front electrodes is of key importance to obtaining high efficiency Si heterojunction (HJ) solar cells. To obtain high transmittance and low resistivity ITO films by direct-current (DC) magnetron sputtering, we studied the impacts of the ITO film deposition conditions, such as the oxygen flow rate, pressure, and sputter power, on the electrical and optical properties of the ITO films. ITO films of resistivity of 4×10−4Ω·m and average transmittance of 89%in the wavelength range of 380–780 nm were obtained under the optimized conditions:oxygen flow rate of 0.1 sccm, pressure of 0.8 Pa, and sputtering power of 110 W. These ITO films were used to fabricate the single-side HJ solar cell without an intrinsic a-Si:H layer. However, the best HJ solar cell was fabricated with a lower sputtering power of 95 W, which had an efficiency of 11.47%, an open circuit voltage (Voc) of 0.626 V, a filling factor (FF) of 0.50, and a short circuit current density (Jsc) of 36.4 mA/cm2. The decrease in the performance of the solar cell fabricated with high sputtering power of 110 W is attributed to the ion bombardment to the emitter. The Voc was improved to 0.673 V when a 5 nm thick intrinsic a-Si:H layer was inserted between the (p) a-Si:H and (n) c-Si layer. The higher Voc of 0.673 V for the single-side HJ solar cell implies the excellent c-Si surface passivation by a-Si:H.

  16. A passive DC current sensing methodology

    Science.gov (United States)

    Wang, Dong F.; Liu, Huan; Li, Xiaodong; Li, Yang; Xian, Weikang

    2016-10-01

    This paper proposes a method for passive sensing a two-wire DC current without using any cord separator. In this method, a piezoelectric thin-film cantilever with a micro-magnet on its end is positioned near a power cord. The DC current in the power cord induces a magnetic field, which generates a magnetic force acting on the micro-magnet. Consequently, the piezoelectric cantilever is bent and induces an output voltage that is sensitive to small variations of DC currents. A prototype device has been fabricated and experimentally studied. It was found that the initial peak amplitude of the piezoelectric output voltage increases linearly with the DC current value upon "ON-OFF" switching. Compared to the Hall-effect based sensing, this method has the advantages of no need of driving voltage or cord separators even for two-wire appliance cords. Apart from the conventional consumer electronics, this method may have a wide application foreground in the new emerging fields, such as energy vehicles, lithium ion battery, or smart power grid.

  17. Optical properties of thin films of mixed Ni–W oxide made by reactive DC magnetron sputtering

    OpenAIRE

    Valyukh, I.; Green, S.V.; Granqvist, C. G.; Niklasson, G. A.; Valyukh, S; Arwin, H.

    2011-01-01

    Thin films of NixW1-x oxides with x = 0.05, 0.19, 0.43 and 0.90 were studied. Films with thicknesses in the range 125-250 nm were deposited on silicon wafers at room temperature by reactive DC magnetron co-sputtering from targets of Ni and W. The films were characterized with X-ray diffraction (XRD), scanning electron microscopy (SEM), and spectroscopic ellipsometry (SE). XRD spectra and SEM micrographs showed that all films were amorphous and possessed a columnar structure. The ellipsometric...

  18. Growth and characterization of a-axis oriented Cr-doped AlN films by DC magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Panda, Padmalochan; Ramaseshan, R., E-mail: seshan@igcar.gov.in; Dash, S. [Materials Science Group, IGCAR, Kalpakkam, 603102 (India); Krishna, Nanda Gopala [Corrosion Science and Technology Group, IGCAR, Kalpakkam, 603102 (India)

    2016-05-23

    Wurtzite type Cr-doped AlN thin films were grown on Si (100) substrates using DC reactive magnetron sputtering with a function of N{sub 2} concentration (15 to 25%). Evolution of crystal structure of these films was studied by GIXRD where a-axis preferred orientation was observed. The electronic binding energy and concentration of Cr in these films were estimated by X-ray photoemission spectroscopy (XPS). We have observed indentation hardness (H{sub IT}) of around 28.2 GPa for a nitrogen concentration of 25%.

  19. Effect of Argon/Oxygen Flow Rate Ratios on DC Magnetron Sputtered Nano Crystalline Zirconium Titanate Thin Films

    Science.gov (United States)

    Rani, D. Jhansi; Kumar, A. GuruSampath; Sarmash, T. Sofi; Chandra Babu Naidu, K.; Maddaiah, M.; Rao, T. Subba

    2016-06-01

    High transmitting, non absorbent, nano crystalline zirconium titanate (ZT) thin films suitable for anti reflection coatings (ARC) were deposited on to glass substrates by direct current (DC) magnetron reactive sputtering technique, under distinct Argon to Oxygen (Ar/O2) gas flow rate ratios of 31/1, 30/2, 29/3 and 28/4, with a net gas flow (Ar + O2) of 32sccm, at an optimum substrate temperature of 250°C. The influence of the gas mixture ratio on the film properties has been investigated by employing x-ray diffraction (XRD), ultra violet visible (UV-vis) spectroscopy, atomic force microscopy (AFM), energy dispersive x-ray analysis (EDX) and four point probe methods. The films showed a predominant peak at 30.85° with (111) orientation. The crystallite size reduced from 22.94 nm to 13.5 nm and the surface roughness increased from 11.53 nm to 50.58 nm with increase in oxygen content respectively. The films deposited at 31/1 and 30/2 showed almost similar chemical composition. Increased oxygen content results an increase in electrical resistivity from 3.59 × 103 to 2.1 × 106 Ωm. The film deposited at Ar/O2 of 28/4 exhibited higher average optical transmittance of 91%, but its refractive index is higher than that of what is required for ARC. The films deposited at 31/1 and 30/2 of Ar/O2 possess higher transmittance (low absorbance) apart from suitable refractive index. Thus, these films are preferable candidates for ARC.

  20. Nano-structured morphological features of pulsed direct current magnetron sputtered Mo films for photovoltaic applications

    Energy Technology Data Exchange (ETDEWEB)

    Karthikeyan, Sreejith, E-mail: s.karthikeyan@edu.salford.ac.uk; Hill, Arthur E.; Pilkington, Richard D.

    2011-10-31

    Historically, molybdenum thin films have been used as the back contact for Cu(In,Ga)Se{sub 2} based solar cells and as such the properties of these layers play an important role in the overall cell structure. This paper describes the production of molybdenum films using pulsed d.c. magnetron sputtering from compressed molybdenum powder targets. The films were deposited at different substrate temperatures under constant power and constant current modes, and analysed using X-ray diffraction, scanning electron microscopy, atomic force microscopy and four point resistance probe. Mechanical strain and resistivity were found to decrease with substrate temperature together with a shift in the (110) crystallographic plane towards higher diffraction angles. All films were well adhered to the glass substrates irrespective of their high tensile strain. Surface morphology analysis revealed the presence of nano-structured stress relief patterns which can enhance the nucleation sites for subsequent CuInSe{sub 2} deposition. A high-resolution cross sectional image showed the columnar growth of the films. Surface roughness analysis revealed that roughness increased with increase in substrate temperature.

  1. Al-doped ZnO films deposited on a slightly reduced buffer layer by reactive dc unbalanced magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Kusayanagi, Minehide; Uchida, Azusa; Oka, Nobuto; Jia, Junjun [Graduate School of Science and Engineering, Aoyama Gakuin University, 5-10-1 Fuchinobe, Sagamihara, Kanagawa 252-5258 (Japan); Nakamura, Shin-ichi [Center for Instrumental Analysis, Aoyama Gakuin University, 5-10-1 Fuchinobe, Sagamihara, Kanagawa 252-5258 (Japan); Shigesato, Yuzo, E-mail: yuzo@chem.aoyama.ac.jp [Graduate School of Science and Engineering, Aoyama Gakuin University, 5-10-1 Fuchinobe, Sagamihara, Kanagawa 252-5258 (Japan)

    2014-03-31

    Al-doped ZnO (AZO) films were deposited on a fused silica glass substrate by reactive dc unbalanced magnetron sputtering using a Zn–Al (Al: 3.6 at.%) alloy target with an impedance control system. A very thin slightly reduced AZO buffer layer was inserted between the glass substrate and AZO films. For the AZO films deposited at 200 °C, the lowest resistivity in the absence of the buffer layer was 8.0 × 10{sup −4} Ω cm, whereas this was reduced to 5.9 × 10{sup −4} Ω cm after introducing a 5-nm-thick buffer layer. The transmittance for all the films was above 80% in the visible region. The effects of the buffer layer were analysed and discussed in detail. It is found that the insertion of the buffer layer can improve the crystallinity of the AZO film. - Highlights: • Al-doped ZnO (AZO) films with AZO buffer layers were deposited. • Reactive dc unbalance magnetron sputtering with impedance control was used. • Insertion of a buffer layer can lead to a lower resistivity. • Insertion of a buffer layer improved the crystallinity of AZO films.

  2. Smoothing of Discharge Inhomogeneities at High Currents in Gasless High Power Impulse Magnetron Sputtering

    CERN Document Server

    Andersson, Joakim; Anders, André

    2014-01-01

    The discharges in high power impulse magnetron sputtering (HiPIMS) have been reported to consist of azimuthally inhomogeneous plasma with locally increased light emission. The luminous zones seemingly travel around the racetrack and are implicated in generation of the high ion kinetic energies observed in HiPIMS. We show that the inhomogeneities smooth out at high discharge current to yield azimuthally homogeneous plasma. This may have implications for the spatial and kinetic energy distribution of sputtered particles, and therefore also on the thin films deposited by high power impulse magnetron sputtering.

  3. Microstructure, mechanical properties and cutting performance of superhard (Ti,Si,Al)N nanocomposite films grown by d.c. reactive magnetron sputtering

    NARCIS (Netherlands)

    Carvalho, S; Ribeiro, E; Rebouta, L; Tavares, CJ; Mendonca, JP; Monteiro, AC; Carvalho, NJM; De Hosson, JTM; Cavaleiro, A

    2004-01-01

    This paper reports on the optimization of coating properties to improve the performance of tools in severe cutting conditions. Tungsten carbide tools coated with (Ti,Si,AI)N films deposited by d.c. reactive magnetron sputtering have been investigated. The structure and the hardness of the coated sam

  4. Electrical and optical properties of reactive dc magnetron sputtered silver-doped indium oxide thin films: role of oxygen

    Energy Technology Data Exchange (ETDEWEB)

    Subrahmanyam, A.; Barik, U.K. [Indian Institute of Technology Madras, Semiconductor Physics Laboratory, Department of Physics, Chennai (India)

    2006-07-15

    Silver-doped indium oxide thin films have been prepared on glass and quartz substrates at room temperature (300 K) by a reactive dc magnetron sputtering technique using an alloy target of pure indium and silver (80:20 at. %). During sputtering, the oxygen flow rates are varied in the range 0.00-2.86 sccm keeping the magnetron power constant at 40 W. The resistivity of these films is in the range 10{sup 0}-10{sup -3} {omega}cm and they show a negative temperature coefficient of resistivity. The films exhibit p-type conductivity at an oxygen flow rate of 1.71 sccm. The work function of these silver-indium oxide films has been measured by a Kelvin probe technique. The refractive index of the films (at 632.8 nm) varies in the range 1.13-1.20. Silver doping in indium oxide narrows the band gap of indium oxide (3.75 eV). (orig.)

  5. Incorporation of N in TiO{sub 2} films grown by DC-reactive magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Serio, S. [CEFITEC, Departamento de Fisica, Faculdade de Ciencias e Tecnologia da Universidade Nova de Lisboa, 2829-516 Caparica (Portugal); Melo Jorge, M.E. [CCMM, Departamento de Quimica e Bioquimica, Faculdade de Ciencias da Universidade de Lisboa, Campo Grande C8, 1749-016 Lisboa (Portugal); Nunes, Y. [CEFITEC, Departamento de Fisica, Faculdade de Ciencias e Tecnologia da Universidade Nova de Lisboa, 2829-516 Caparica (Portugal); Barradas, N.P. [Instituto Tecnologico e Nuclear and CFNUL, E.N. 10, Sacavem 2686-953 (Portugal); Alves, E., E-mail: ealves@itn.pt [Instituto Tecnologico e Nuclear and CFNUL, E.N. 10, Sacavem 2686-953 (Portugal); Munnik, F. [Helmholtz-Zentrum Dresden-Rossendorf (Germany)

    2012-02-15

    Photocatalytic properties of TiO{sub 2} are expected to play an important role on emerging technologies based on OH radicals to destroy harmful nonbiodegradable organic and inorganic contaminants in water. The drawback is the wide band gap of TiO{sub 2} (3.2 eV) limiting its use to the UV part of electromagnetic spectrum under sunlight. Therefore, modifications of TiO{sub 2} are needed to tune the gap in order to allow an efficient use of the entire solar spectrum. One possibility is N-doping of TiO{sub 2} to make the photocatalytic activity possible under visible light and more suitable for water treatment. In our study nitrogen-doped TiO{sub 2} (TiO{sub 2-x}N{sub x}) films were deposited by DC-reactive magnetron sputtering using a dual-magnetron co-deposition apparatus on unheated glass and silicon substrates using a pure titanium target. The depth profile of nitrogen was measured with heavy ion elastic recoil detection analysis combined with Rutherford backscattering spectrometry (RBS) and correlated with the optical and structural properties obtained by UV-VIS spectroscopy and X-ray diffraction (XRD).

  6. Substrate Temperature Dependent Properties of Cu Doped NiO Films Deposited by DC Reactive Magnetron Sputtering

    Institute of Scientific and Technical Information of China (English)

    Yarraguntla Ashok Kumar Reddy; Akepati Sivasankar Reddy; Pamanji Sreedhara Reddy

    2013-01-01

    The NiO-Cu composite films were deposited on a glass substrate at various substrate temperatures by DC reactive magnetron sputtering technique.The effect of substrate temperature on the structural,optical,morphological and electrical properties of the films was mainly investigated.X-ray diffraction studies revealed that when the substrate temperature increased to above 200 C,the preferred orientation tended to move to another preferred site from (220) to (111) and had a stable cubic structure.The optical transmittance and band gap values increased with increasing substrate temperature.From the morphological studies,it was observed that the grain size and root mean square roughness were increased with increasing substrate temperature.The electrical resistivity of the film decreased to 0.017 Ω cm at high substrate temperature of 400 C.

  7. Thin Film growth and characterization of Ti doped ZnO by RF/DC magnetron sputtering

    KAUST Repository

    Baseer Haider, M.

    2015-01-01

    Thin film Ti doped ZnO (Ti-ZnO) film were grown on sapphire (0001) substrate by RF and DC magnetron sputtering. Films were grown at a substrate temperature of 250 °C with different Ti/Zn concentration. Surface chemical study of the samples was performed by X-ray photoelectron spectroscopy to determine the stoichiometry and Ti/Zn ratio for all samples. Surface morphology of the samples were studied by atomic force microscopy. X-ray diffraction was carried out to determine the crystallinity of the film. No secondary phases of TixOy was observed. We observed a slight increase in the lattice constant with the increase in Ti concentration in ZnO. No ferromagnetic signal was observed for any of the samples. However, some samples showed super-paramagnetic phase. © 2015 Materials Research Society.

  8. OPTICAL CHARACTERIZATION OF TiO2 THIN FILM ON SILICON SUBSTRATE DEPOSITED BY DC REACTIVE MAGNETRON SPUTTERING

    Institute of Scientific and Technical Information of China (English)

    H.Q. Wang; H. Shen; D.C. Ba; B.W. Wang; L.S. Wen; D. Chen

    2005-01-01

    TiO2 thin film has attracted considerable attention in recent years, due to its different refractive index and transparency with amorphous and different crystals in the visible and near-infrared wavelength region, high dielectric constant, wide band gap, high wear resistance and stability, etc, for which make it being used in many fields. This paper aims to investigate the optical characterization of thin film TiO2 on silicon wafer. The TiO2 thin films were prepared by DC reactive magnetron sputtering process from Ti target. The reflectivity of the films was measured by UV-3101PC, and the index of refraction (n) and extinction coefficient (k) were measured by n & k Analyzer 1200.

  9. Effects of oxygen partial pressure on optical properties of NiOX films deposited by reactive DC-magnetron sputtering

    Institute of Scientific and Technical Information of China (English)

    Ying Zhou; Yongyou Geng; Donghong Gu

    2006-01-01

    The influence of oxygen partial pressure on the optical properties of NiOX thin films deposited by reactive DC-magnetron sputtering from a nickel metal target in a mixture gas of oxygen and argon was presented.With the oxygen ratio increasing, the reflectivity of the as-deposited films decreased, and optical band gap increased. Thermogravimetric analysis (TGA) showed that the decompose temperature of the films was above 250 ℃. After annealed at 400 ℃, only films deposited at 5% O2/Ar ratio showed high opticalcontrast which was about 52%. Scanning electron microscope (SEM) results revealed that the changes ofsurface morphology were responsible for the optical property variations of the films after annealing. Itsthermal stability and high optical contrast before and after annealing made it a good potential write-onceoptical recording medium.

  10. Structural and Optical Properties of Mg Doped ZnO Thin Films Deposited by DC Magnetron Sputtering

    Directory of Open Access Journals (Sweden)

    A.Sh. Asvarov

    2016-11-01

    Full Text Available This paper reports the growth and characterization of transparent magnesium doped zinc oxide (ZnO:Mg thin films prepared on glass substrates by dc magnetron sputtering. The effects of the Mg concentrations (0, 1 and 5 at % and working gas compositions (pure Ar and Ar-O2 mixture on the structural and optical properties of the ZnO:Mg thin films were investigated. The experiment results showed that the ZnO and ZnO:Mg thin films are polycrystalline with a hexagonal wurtzite structure exhibiting a preferred (002 crystal plane orientation. The results indicated that the crystallinity of ZnO:Mg thin films was significantly affected by both Mg-doping and the woking gas composition. Optical studies revealed that the optical band gap increases with Mg concentration.

  11. Optoelectronic and electrochemical properties of nickel oxide (NiO) films deposited by DC reactive magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Subramanian, B. [Electrochemical Materials Science Division, Central Electrochemical Research Institute, Karaikudi 630 006 (India); Mohamed Ibrahim, M. [Birla Institute of Technology and Science, Pilani, Dubai (United Arab Emirates); Senthilkumar, V. [School of Physics, Alagappa University, Karaikudi 630 003 (India); Murali, K.R.; Vidhya, VS. [Electrochemical Materials Science Division, Central Electrochemical Research Institute, Karaikudi 630 006 (India); Sanjeeviraja, C. [School of Physics, Alagappa University, Karaikudi 630 003 (India); Jayachandran, M. [Electrochemical Materials Science Division, Central Electrochemical Research Institute, Karaikudi 630 006 (India)], E-mail: jayam54@yahoo.com

    2008-11-30

    Nickel oxide (NiO) thin films were deposited onto glass substrates by the DC reactive magnetron sputtering technique. The as-deposited films were post-annealed in air at 450-500 deg. C for 5 h. The effect of annealing on the structural, microstructural, electrical and optical properties were studied by X-ray diffraction (XRD), atomic force microscope (AFM), four-probe resistivity measurement and UV-vis spectrophotometer. XRD studies indicated cubic structure with a lattice parameter of 0.4193 nm. The band gap of the films was found to be 3.58 eV. Fourier transform infrared (FTIR) studies indicated a broad spectrum centered at 451.6 cm{sup -1}. Photoluminescence studies exhibited room temperature emission at 440 nm. Cyclic voltammetry studies in 1 M KOH solution revealed the electrochromic nature of the NiO films prepared in the present study.

  12. Influence of temperature on the microstructure of V2O5 film prepared by DC magnetron sputtering

    Institute of Scientific and Technical Information of China (English)

    SU Qing; PAN Xiaojun; XIE Erqing; WANG Yinyue; QIU Jiawen; LIU Xueqin

    2006-01-01

    V2O5 films were prepared on silicon wafers by DC magnetron sputtering and post-annealing under various conditions. The influence of depositing and post-annealing temperatures on microstructure of V2O5 films was studied by XRD and Raman scattering measurements. The results reveal that sputtered V2O5 films show preferred growth orientation along (001) planes and the c -axis is perpendicular to the silicon substrate surface. It is interesting to find that both the V2O5 film deposited at temperature of 511 ℃ and the one annealed at 500℃ exhibit desirable layer-type structure of orthorhombic symmetry. Such layer-typed V2O5 films are promising candidates for cathodes of rechargeable lithiumor magnesium thin-film batteries.

  13. Bonding structure and morphology of chromium oxide films grown by pulsed-DC reactive magnetron sputter deposition

    Energy Technology Data Exchange (ETDEWEB)

    Gago, R., E-mail: rgago@icmm.csic.es [Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Científicas, E-28049 Madrid (Spain); Vinnichenko, M. [Fraunhofer-Institut für Keramische Technologien und Systeme IKTS, D-01277 Dresden (Germany); Hübner, R. [Helmholtz-Zentrum Dresden – Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstraße 400, 01328 Dresden (Germany); Redondo-Cubero, A. [Departamento de Física Aplicada and Centro de Microanálisis de Materiales, Universidad Autónoma de Madrid, E-28049 Madrid (Spain)

    2016-07-05

    Chromium oxide (CrO{sub x}) thin films were grown by pulsed-DC reactive magnetron sputter deposition in an Ar/O{sub 2} discharge as a function of the O{sub 2} fraction in the gas mixture (ƒ) and for substrate temperatures, T{sub s}, up to 450 °C. The samples were analysed by Rutherford backscattering spectrometry (RBS), spectroscopic ellipsometry (SE), atomic force microscopy (AFM), scanning (SEM) and transmission (TEM) electron microscopy, X-ray diffraction (XRD), and X-ray absorption near-edge structure (XANES). On unheated substrates, by increasing ƒ the growth rate is higher and the O/Cr ratio (x) rises from ∼2 up to ∼2.5. Inversely, by increasing T{sub s} the atomic incorporation rate drops and x falls to ∼1.8. XRD shows that samples grown on unheated substrates are amorphous and that nanocrystalline Cr{sub 2}O{sub 3} (x = 1.5) is formed by increasing T{sub s}. In amorphous CrO{sub x}, XANES reveals the presence of multiple Cr environments that indicate the growth of mixed-valence oxides, with progressive promotion of hexavalent states with ƒ. XANES data also confirms the formation of single-phase nanocrystalline Cr{sub 2}O{sub 3} at elevated T{sub s}. These structural changes also reflect on the optical and morphological properties of the films. - Highlights: • XANES of CrO{sub x} thin films grown by pulsed-DC reactive magnetron sputtering. • Identification of mixed-valence amorphous CrO{sub x} oxides on unheated substrates. • Promotion of amorphous chromic acid (Cr{sup VI}) by increasing O{sub 2} partial pressure. • Production of single-phase Cr{sub 2}O{sub 3} films by increasing substrate temperature. • Correlation of bonding structure with morphological and optical properties.

  14. Bioactivity response of Ta{sub 1-x}O{sub x} coatings deposited by reactive DC magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Almeida Alves, C.F., E-mail: cristiana.alves@fisica.uminho.pt [GRF-CFUM, Physics Departament, University of Minho, Campus of Azurem, Guimaraes 4800-058 (Portugal); Cavaleiro, A. [SEG-CEMUC, Mechanical Engineering Department, University of Coimbra, Coimbra 3030-788 (Portugal); Carvalho, S. [GRF-CFUM, Physics Departament, University of Minho, Campus of Azurem, Guimaraes 4800-058 (Portugal); SEG-CEMUC, Mechanical Engineering Department, University of Coimbra, Coimbra 3030-788 (Portugal)

    2016-01-01

    The use of dental implants is sometimes accompanied by failure due to periimplantitis disease and subsequently poor esthetics when soft–hard tissue margin recedes. As a consequence, further research is needed for developing new bioactive surfaces able to enhance the osseous growth. Tantalum (Ta) is a promising material for dental implants since, comparing with titanium (Ti), it is bioactive and has an interesting chemistry which promotes the osseointegration. Another promising approach for implantology is the development of implants with oxidized surfaces since bone progenitor cells interact with the oxide layer forming a diffusion zone due to its ability to bind with calcium which promotes a stronger bond. In the present report Ta-based coatings were deposited by reactive DC magnetron sputtering onto Ti CP substrates in an Ar + O{sub 2} atmosphere. In order to assess the osteoconductive response of the studied materials, contact angle and in vitro tests of the samples immersed in Simulated Body Fluid (SBF) were performed. Structural results showed that oxide phases where achieved with larger amounts of oxygen (70 at.% O). More compact and smooth coatings were deposited by increasing the oxygen content. The as-deposited Ta coating presented the most hydrophobic character (100°); with increasing oxygen amount contact angles progressively diminished, down to the lowest measured value, 63°. The higher wettability is also accompanied by an increase on the surface energy. Bioactivity tests demonstrated that highest O-content coating, in good agreement with wettability and surface energy values, showed an increased affinity for apatite adhesion, with higher Ca/P ratio formation, when compared to the bare Ti substrates. - Highlights: • Ta{sub 1-x}O{sub x} coatings were deposited by reactive DC magnetron sputtering. • Amorphous oxide phases were achieved with higher oxygen amounts. • Contact angles progressively diminished, with increasing oxygen content. • Ta

  15. Microstructure and He desorption behaviors of He charged FeCrNi-based films fabricated by direct current magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Song, L. [Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, P.O. Box 1129, Hefei 230031 (China); Wang, X.P., E-mail: xpwang@issp.ac.cn [Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, P.O. Box 1129, Hefei 230031 (China); Liu, F. [Institute of Plasma Physics, Chinese Academy of Sciences, P.O. Box 1126, Hefei 230031 (China); Gao, Y.X. [Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, P.O. Box 1129, Hefei 230031 (China); Zhang, T., E-mail: zhangtao@issp.ac.cn [Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, P.O. Box 1129, Hefei 230031 (China); Luo, G.N. [Institute of Plasma Physics, Chinese Academy of Sciences, P.O. Box 1126, Hefei 230031 (China); Fang, Q.F.; Liu, C.S. [Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, P.O. Box 1129, Hefei 230031 (China)

    2015-08-31

    He-charged FeCrNi-based films were prepared at different temperatures in a mixed atmosphere of He and Ar by direct-current magnetron sputtering method. X-ray diffraction and energy dispersive spectrometry analysis confirmed the typical austenitic structure of the deposited FeCrNi films and the compositions were in good accordance with 304 stainless steel target. Cross-sectional scanning electron microscopy images revealed the dense columnar nanocrystalline structure of the fabricated FeCrNi films. Nanoindentation measurements showed that the film fabricated at 300 °C exhibited the highest hardness value of 11.5 GPa. He desorption from FeCrNi-based films was traced by thermal desorption spectroscopy; the relatively low He desorption temperature range (150 °C–450 °C) implied that the charged He atoms were mainly located in interstitial sites of FeCrNi-based films. - Highlights: • He-charged columnar nanocrystalline FeCrNi films were prepared by DC magnetron sputtering. • Substrate temperature of 300 °C and He/Ar ratio 1:1 were the best sputtering parameters. • Compact and uniform microstructure obtained at 300 °C resulted in stable, high hardness. • Two He atoms' absorption/desorption mechanisms were revealed by TDS.

  16. Nanowires for high DC current applications

    Energy Technology Data Exchange (ETDEWEB)

    Hankemeier, Sebastian; Sachse, Konrad; Stark, Yuliya; Scholz, Matthias; Hoffmann, Germar; Froemter, Robert; Oepen, Hans Peter [Universitaet Hamburg (Germany)

    2008-07-01

    For a more detailed investigation of current induced domain wall movement in nanowires by spin torque effect, it is essential to have maximum control of the external experimental parameters, i.e. the current density and the wire temperature. Additional, to study the forces that act on the walls, it is desirable to perform experiments with DC currents large enough to move the domain walls. In this talk we present the realization of Permalloy nanowires which sustain current densities larger 4.10{sup 12} A/m{sup 2}. The wires are made from 20 nm thick Permalloy, evaporated on diamond, with a width of 1 {mu}m and a length of 25 {mu}m. While applying current densities beyond 10{sup 11} A/m{sup 2}, we observe ohmic heating of the wires, which causes annealing effects. This effect can be used to improve the specific resistance of the wire near to the values of bulk material. The experiments are performed under HV conditions to prevent oxidation and cooling with liquid nitrogen is necessary for heat dissipation. The temperature of the wire, which depends on the applied current, has been evaluated utilizing the change in wire-resistance and estimated by heat transfer calculations.

  17. Ultrasensitive hydrogen sensor based on Pt-decorated WO₃ nanorods prepared by glancing-angle dc magnetron sputtering.

    Science.gov (United States)

    Horprathum, M; Srichaiyaperk, T; Samransuksamer, B; Wisitsoraat, A; Eiamchai, P; Limwichean, S; Chananonnawathorn, C; Aiempanakit, K; Nuntawong, N; Patthanasettakul, V; Oros, C; Porntheeraphat, S; Songsiriritthigul, P; Nakajima, H; Tuantranont, A; Chindaudom, P

    2014-12-24

    In this work, we report an ultrasensitive hydrogen (H2) sensor based on tungsten trioxide (WO3) nanorods decorated with platinum (Pt) nanoparticles. WO3 nanorods were fabricated by dc magnetron sputtering with a glancing angle deposition (GLAD) technique, and decorations of Pt nanoparticles were performed by normal dc sputtering on WO3 nanorods with varying deposition time from 2.5 to 15 s. Crystal structures, morphologies, and chemical information on Pt-decorated WO3 nanorods were characterized by grazing-incident X-ray diffraction, field-emission scanning electron microscopy, energy-dispersive X-ray spectroscopy, and photoelectron spectroscopy, respectively. The effect of the Pt nanoparticles on the H2-sensing performance of WO3 nanorods was investigated over a low concentration range of 150-3000 ppm of H2 at 150-350 °C working temperatures. The results showed that the H2 response greatly increased with increasing Pt-deposition time up to 10 s but then substantially deteriorated as the deposition time increased further. The optimally decorated Pt-WO3 nanorod sensor exhibited an ultrahigh H2 response from 1530 and 214,000 to 150 and 3000 ppm of H2, respectively, at 200 °C. The outstanding gas-sensing properties may be attributed to the excellent dispersion of fine Pt nanoparticles on WO3 nanorods having a very large effective surface area, leading to highly effective spillover of molecular hydrogen through Pt nanoparticles onto the WO3 nanorod surface.

  18. An optimal current observer for predictive current controlled buck DC-DC converters.

    Science.gov (United States)

    Min, Run; Chen, Chen; Zhang, Xiaodong; Zou, Xuecheng; Tong, Qiaoling; Zhang, Qiao

    2014-05-19

    In digital current mode controlled DC-DC converters, conventional current sensors might not provide isolation at a minimized price, power loss and size. Therefore, a current observer which can be realized based on the digital circuit itself, is a possible substitute. However, the observed current may diverge due to the parasitic resistors and the forward conduction voltage of the diode. Moreover, the divergence of the observed current will cause steady state errors in the output voltage. In this paper, an optimal current observer is proposed. It achieves the highest observation accuracy by compensating for all the known parasitic parameters. By employing the optimal current observer-based predictive current controller, a buck converter is implemented. The converter has a convergently and accurately observed inductor current, and shows preferable transient response than the conventional voltage mode controlled converter. Besides, costs, power loss and size are minimized since the strategy requires no additional hardware for current sensing. The effectiveness of the proposed optimal current observer is demonstrated experimentally.

  19. Surface and Electrical Properties of NiCr Thin Films Prepared by DC Magnetron Sputtering

    Institute of Scientific and Technical Information of China (English)

    ZHOU Jicheng; TIAN Li; YAN Jianwu

    2008-01-01

    Several batches of NiCr alloy thin films with different thickness were prepared in a multi-targets magnetron sputtering apparatus by changing sputtering time while keeping sputtering target power of Ni and Cr fixed. Then the as-deposited films were characterized by energy-dispersive X-Ray spectrometer (EDX),Atomic Force Microscope (AFM) and four-point probe (FPP) to measure surface grain size, roughness and sheet resistance. The film thickness was measured by Alpha-Step IQ Profilers. The thickness dependence of surface roughness, lateral grain size and resistivity was also studied. The experimental results show that the grain size increases with film thickness and the surface roughness reaches the order of nanometer at all film thickness. The as-deposited film resistivity decreases with film thickness.

  20. Structure adhesion and corrosion resistance study of tungsten bisulfide doped with titanium deposited by DC magnetron co-sputtering

    Energy Technology Data Exchange (ETDEWEB)

    De La Roche, J. [Laboratorio de Física del Plasma, Universidad Nacional de Colombia Sede Manizales, Km. 9 vía al aeropuerto, Campus La Nubia, Manizales (Colombia); González, J.M. [Laboratorio de Recubrimientos Duros y Aplicaciones Industriales – RDAI, Universidad del Valle, Calle 13 N° 100-00 Ciudadela Meléndez, Cali (Colombia); Restrepo-Parra, E., E-mail: erestrepop@unal.edu.co [Laboratorio de Física del Plasma, Universidad Nacional de Colombia Sede Manizales, Km. 9 vía al aeropuerto, Campus La Nubia, Manizales (Colombia); Sequeda, F. [Laboratorio de Recubrimientos Duros y Aplicaciones Industriales – RDAI, Universidad del Valle, Calle 13 N° 100-00 Ciudadela Meléndez, Cali (Colombia); Alleh, V.; Scharf, T.W. [The University of North Texas, Department of Materials Science and Engineering, Denton, TX 76203 (United States)

    2014-11-30

    Highlights: • Ti-doped WS{sub 2} films were grown via the magnetron co-sputtering technique. • At a high Ti percentage, the crystalline structure of WS{sub 2} coatings tends to be amorphous. • As the Ti percentage increases in WS{sub 2} coatings, nanocomposites tend to form. • Ti-doped WS{sub 2} films have elastic behavior compared with the plastic response of pure WS{sub 2} films. • A high Ti percentage increases the corrosion resistance of WS{sub 2} films. - Abstract: Titanium-doped tungsten bisulfide thin films (WS{sub 2}-Ti) were grown using a DC magnetron co-sputtering technique on AISI 304 stainless steel and silicon substrates. The films were produced by varying the Ti cathode power from 0 to 25 W. Using energy dispersive spectroscopy (EDS), the concentration of Ti in the WS{sub 2} was determined, and a maximum of 10% was obtained for the sample grown at 25 W. Moreover, the S/W ratio was calculated and determined to increase as a function of the Ti cathode power. According to transmission electron microscopy (TEM) results, at high titanium concentrations (greater than 6%), nanocomposite formation was observed, with nanocrystals of Ti embedded in an amorphous matrix of WS{sub 2}. Using the scratch test, the coatings’ adhesion was analyzed, and it was observed that as the Ti percentage was increased, the critical load (Lc) also increased. Furthermore, the failure type changed from plastic to elastic. Finally, the corrosion resistance was evaluated using the electrochemical impedance spectroscopy (EIS) technique, and it was observed that at high Ti concentrations, the corrosion resistance was improved, as Ti facilitates coating densification and generates a protective layer.

  1. Experimental investigation of quasiperiodic-chaotic-quasiperiodic-chaotic transition in a direct current magnetron sputtering plasma

    Energy Technology Data Exchange (ETDEWEB)

    Sabavath, Gopi Kishan; Banerjee, I.; Mahapatra, S. K., E-mail: skmahapatra@bitmesra.ac.in [Plasma Laboratory, Department of Physics, Birla Institute of Technology-Mesra, Ranchi 835215 (India); Shaw, Pankaj Kumar; Sekar Iyengar, A. N. [Plasma Physics Division, Saha Institute of Nuclear Physics, 1/AF, Bidhannagar, Kolkata 700064 (India)

    2015-08-15

    Floating potential fluctuations from a direct current magnetron sputtering plasma have been analysed using time series analysis techniques like phase space plots, power spectra, frequency bifurcation plot, etc. The system exhibits quasiperiodic-chaotic-quasiperiodic-chaotic transitions as the discharge voltage was increased. The transitions of the fluctuations, quantified using the largest Lyapunov exponent, have been corroborated by Hurst exponent and the Shannon entropy. The Shannon entropy is high for quasiperiodic and low for chaotic oscillations.

  2. Evidence for breathing modes in direct current, pulsed, and high power impulse magnetron sputtering plasmas

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Yuchen [State Key Lab for Materials Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074 (China); Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720 (United States); Zhou, Xue [Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720 (United States); Department of Electrical Engineering, Harbin Institute of Technology, Harbin 150000 (China); Liu, Jason X. [Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720 (United States); Department of Physics, University of California, Berkeley, Berkeley, California 94720 (United States); Anders, André, E-mail: aanders@lbl.gov [Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720 (United States)

    2016-01-18

    We present evidence for breathing modes in magnetron sputtering plasmas: periodic axial variations of plasma parameters with characteristic frequencies between 10 and 100 kHz. A set of azimuthally distributed probes shows synchronous oscillations of the floating potential. They appear most clearly when considering the intermediate current regime in which the direction of azimuthal spoke motion changes. Breathing oscillations were found to be superimposed on azimuthal spoke motion. Depending on pressure and current, one can also find a regime of chaotic fluctuations and one of stable discharges, the latter at high current. A pressure-current phase diagram for the different situations is proposed.

  3. Propagation direction reversal of ionization zones in the transition between high and low current magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    School of Materials Science and Engineering, State Key Lab for Materials Processing and Die & Mold Technology, Huazhong University of Science and Technology, Wuhan 430074, China; Department of Physics, University of California Berkeley, Berkeley, California 94720, USA; Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720, USA; Yang, Yuchen; Liu, Jason; Liu, Lin; Anders, André

    2014-12-11

    Past research has revealed the propagation of dense, asymmetric ionization zones in both high and low current magnetron discharges. Here we report about the direction reversal of ionization zone propagation as observed with fast cameras. At high currents, zones move in the E B direction with velocities of 103 to 104 m/s. However at lower currents, ionization zones are observed to move in the opposite, the -E B direction, with velocities ~;; 103 m/s. It is proposed that the direction reversal is associated with the local balance of ionization and supply of neutrals in the ionization zone.

  4. High Current Planar Magnetics for High Efficiency Bidirectional DC-DC Converters for Fuel Cell Applications

    DEFF Research Database (Denmark)

    Pittini, Riccardo; Zhang, Zhe; Andersen, Michael A. E.

    2014-01-01

    Efficiency is one of the main concerns during the design phase of switch mode power supply. Planar magnetics based on PCB windings have the potential to reduce the magnetic manufacturing cost however, one of their main drawbacks comes from their low filling factor and high stray capacitance....... This paper presents an analysis of different planar windings configurations focusing on dc and ac resistances in order to achieve highly efficiency in dc-dc converters. The analysis considers different copper thicknesses form 70 μm up to 1500 μm (extreme copper PCB) taking into account manufacturing...... complexity and challenges. The analysis is focused on a high current inductor for a dc-dc converter for fuel cell applications and it is based on FEM simulations. Analysis and results are verified on a 6 kW dc-dc isolated full bridge boost converter prototype based on fully planar magnetics achieving a peak...

  5. Characterization of nanostructured Ti-B-(N) coatings produced by direct current magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Lopez-Cartes, C. [Instituto de Ciencia de Materiales de Sevilla (CSIC-Univ. Sevilla), Avda. Americo Vespucio 49, 41092 Sevilla (Spain)]. E-mail: clopez@icmse.csic.es; Martinez-Martinez, D. [Instituto de Ciencia de Materiales de Sevilla (CSIC-Univ. Sevilla), Avda. Americo Vespucio 49, 41092 Sevilla (Spain); Sanchez-Lopez, J.C. [Instituto de Ciencia de Materiales de Sevilla (CSIC-Univ. Sevilla), Avda. Americo Vespucio 49, 41092 Sevilla (Spain); Fernandez, A. [Instituto de Ciencia de Materiales de Sevilla (CSIC-Univ. Sevilla), Avda. Americo Vespucio 49, 41092 Sevilla (Spain); Garcia-Luis, A. [Fundacion INASMET, Mikeletegi Pasealekua 2, 20009 Donostia-San Sebastian (Spain); Brizuela, M. [Fundacion INASMET, Mikeletegi Pasealekua 2, 20009 Donostia-San Sebastian (Spain); Onate, J.I. [Fundacion INASMET, Mikeletegi Pasealekua 2, 20009 Donostia-San Sebastian (Spain)

    2007-02-26

    A series of Ti-B-(N) coatings prepared by dc magnetron sputtering using TiB{sub 2} targets in Ar/N{sub 2} gas mixtures has been chemically and structurally characterized by transmission electron microscopy, X-ray diffraction, electron energy-loss spectroscopy, and X-ray photoelectron spectroscopy. The influence of synthesis parameters such as applied heating power and nitrogen flow on the structure and chemical composition of the coatings has been studied. Independently of the experimental conditions employed during the synthesis, hexagonal TiB{sub 2} is the main crystalline phase present in the coatings. The use of N{sub 2} leads to the formation of an amorphous mixture of BN/TiN phases, as well as a diminution of the TiB{sub 2} crystalline phase. The influence of the composition and structure of the coatings on their hardness is also discussed.

  6. A Spectroscopic Ellipsometry Study of TiO2 Thin Films Prepared by dc Reactive Magnetron Sputtering: Annealing Temperature Effect

    Institute of Scientific and Technical Information of China (English)

    Mati Horprathum; Pongpan Chindaudom; Pichet Limsuwan

    2007-01-01

    TiO2 thin Rims are obtained by dc reactive magnetron sputtering. A target of titanium (99.995%) and a mixture of argon and oxygen gases are used to deposit TiO2 films on to silicon wafers (100). The crystalline structure of deposited and annealed film are deduced by variable-angle spectroscopic ellipsometry (VASE) and supported by x-ray diffractometry. The optical properties of the Sims are examined by VASE. Measurements of ellipsometry are performed in the spectral range 0.72-3.55 eV at incident angle 75°. Several SE models, categorized by physical and optical models, are proposed based on the 'simpler better' rule and curve-fits, which are generated and compared to the experimental data using the regression analysis. It has been found that the triple-layer physical model together with the Cody-Lorentz dispersion model offer the most convincing result. The as-deposited films are found to be inhomogeneous and amorphous, whereas the annealed films present the phase transition to anatase and rutile structures. The refractive index of TiO2 thin films increases with annealing temperature. A more detailed analysis further reveals that thickness of the top sub-layer increases, whereas the region of the bottom amorphous sub-layer shrinks when the films are annealed at 300°C.

  7. AlN thin films deposited by DC reactive magnetron sputtering: effect of oxygen on film growth

    Science.gov (United States)

    García Molleja, Javier; José Gómez, Bernardo; Ferrón, Julio; Gautron, Eric; Bürgi, Juan; Abdallah, Bassam; Abdou Djouadi, Mohamed; Feugeas, Jorge; Jouan, Pierre-Yves

    2013-11-01

    Aluminum nitride is a ceramic compound with many technological applications in many fields, for example optics, electronics and resonators. Contaminants play a crucial role in the AlN performance. This paper focuses mainly in the effect of oxygen when AlN, with O impurities in its structure, is grown on oxidized layers. In this study, AlN thin films have been deposited at room temperature and low residual vacuum on SiO2/Si (1 0 0) substrates. AlN films were grown by DC reactive magnetron sputtering (aluminum target) and atmosphere composed by an argon/nitrogen mixture. Working pressure was 3 mTorr. Film characterization was performed by AES, XRD, SEM, EDS, FTIR, HRTEM, SAED and band-bending method. Our results show that oxidized interlayer imposes compressive stresses to AlN layer, developing a polycrystalline deposition. Indeed, when film thickness is over 900 nm, influence of oxidized interlayer diminishes and crystallographic orientation changes to the (0 0 0 2) one, i.e., columnar structure, and stress relief is induced (there is a transition from compressive to tensile stress). Also, we propose a growth scenario to explain this behaviour.

  8. CIECA - Application to current programmed switching Dc-Dc converters

    Science.gov (United States)

    Chetty, P. R. K.

    1982-09-01

    The current injection equivalent circuit approach (CIECA) to modeling switching converter power stages is extended to model the current programmed converter power stages operating in fixed frequency, continuous inductor conduction mode. To demonstrate the method, modeling is carried out for the buck, boost, and buckboost converters to obtain small-signal linear equivalent circuit models which represent both input and output properties. The results of these analyses are presented in the form of linear equivalent circuit models as well as transfer functions. Though current programmed converters exhibit single-pole response, the addition of artificial ramp changes converters to exhibit well damped two-pole response. This has been investigated for the first time using CIECA. The results of these analyses are presented in the form of linear equivalent circuit models as well as transfer functions.

  9. A high current density DC magnetohydrodynamic (MHD) micropump

    NARCIS (Netherlands)

    Homsy, Alexandra; Koster, Sander; Eijkel, Jan C.T.; Berg, van den Albert; Lucklum, F.; Verpoorte, E.; Rooij, de Nico F.

    2005-01-01

    This paper describes the working principle of a DC magnetohydrodynamic (MHD) micropump that can be operated at high DC current densities (J) in 75-µm-deep microfluidic channels without introducing gas bubbles into the pumping channel. The main design feature for current generation is a micromachined

  10. A high current density DC magnetohydrodynamic (MHD) micropump

    NARCIS (Netherlands)

    Homsy, A; Koster, Sander; Eijkel, JCT; van den Berg, A; Lucklum, F; Verpoorte, E; de Rooij, NF

    2005-01-01

    This paper describes the working principle of a DC magnetohydrodynamic (MHD) micropump that can be operated at high DC current densities (J) in 75-mu m-deep microfluidic channels without introducing gas bubbles into the pumping channel. The main design feature for current generation is a micromachin

  11. Control and enhancement of the oxygen storage capacity of ceria films by variation of the deposition gas atmosphere during pulsed DC magnetron sputtering

    Science.gov (United States)

    Eltayeb, Asmaa; Vijayaraghavan, Rajani K.; McCoy, Anthony; Venkatanarayanan, Anita; Yaremchenko, Aleksey A.; Surendran, Rajesh; McGlynn, Enda; Daniels, Stephen

    2015-04-01

    In this study, nanostructured ceria (CeO2) films are deposited on Si(100) and ITO coated glass substrates by pulsed DC magnetron sputtering using a CeO2 target. The influence on the films of using various gas ambients, such as a high purity Ar and a gas mixture of high purity Ar and O2, in the sputtering chamber during deposition are studied. The film compositions are studied using XPS and SIMS. These spectra show a phase transition from cubic CeO2 to hexagonal Ce2O3 due to the sputtering process. This is related to the transformation of Ce4+ to Ce3+ and indicates a chemically reduced state of CeO2 due to the formation of oxygen vacancies. TGA and electrochemical cyclic voltammetry (CV) studies show that films deposited in an Ar atmosphere have a higher oxygen storage capacity (OSC) compared to films deposited in the presence of O2. CV results specifically show a linear variation with scan rate of the anodic peak currents for both films and the double layer capacitance values for films deposited in Ar/O2 mixed and Ar atmosphere are (1.6 ± 0.2) × 10-4 F and (4.3 ± 0.5) × 10-4 F, respectively. Also, TGA data shows that Ar sputtered samples have a tendency to greater oxygen losses upon reduction compared to the films sputtered in an Ar/O2 mixed atmosphere.

  12. Design and Implementation of Digital Current Mode Controller for DC-DC Converters

    DEFF Research Database (Denmark)

    Taeed, Fazel

    to be regulated by a closed-loop controller. The Peak Current Mode Control (PCMC) is one of the most promising control methods for dc-dc converters. It has been known for high bandwidth (speed), and inherent current protection. Increasing the controller bandwidth decreases the output filter size and cost. Analog...... a bandwidth of 1/10 of the switching frequency. In the current state-of-the-art, the best reported digital PCMC has crossover frequency of 1/15 of the switching frequency. In this PhD study a novel digital PCMC with negligible delay in the inner current loop has been proposed. The proposed solution has...... are eliminated in current mode control; applying the current mode control in high efficiency dc-dc converters results in much higher controller bandwidth....

  13. [Preparation of large area Al-ZnO thin film by DC magnetron sputtering].

    Science.gov (United States)

    Jiao, Fei; Liao, Cheng; Han, Jun-Feng; Zhou, Zhen

    2009-03-01

    Solar cells of p-CIS/n-buffer/ZnO type, where CIS is (CuInS2, CuInSe2 or intermediates, are thin-film-based devices for the future high-efficiency and low-cost photovoltaic devices. As important thin film, the properties of Al-doped ZnO (AZO) directly affect the parameter of the cell, especially for large volume. In the present paper, AZO semiconductor transparent thin film on soda-lime glass was fabricated using cylindrical zinc-aluminum target, which can not only lower the cost of the target but also make the preparation of large area AZO thin film more easily. Using the DC magnet sputtering techniques and rolling target, high utilization efficiency of target was achieved and large area uniform and directional film was realized. An introduction to DC magnet sputtering techniques for large area film fabrication is given. With different measurement methods, such as X-ray diffraction (XRD) and scan electron microscope (SEM), we analyzed large size film's structure, appearance, and electrical and optical characteristics. The XRD spectrum indicated that the AZO film shows well zinc-blende structure with a preferred (002) growth and the c-axis is oriented normal to the substrate plane. The lattice constant is 5.603 9 nm and the mismatch with CdS thin film is only 2 percent. It absolutely satisfied the demand of the GIGS solar cell. The cross-section of the AZO thin film indicates the columnar structure and the surface morphology shows that the crystal size is about 50 nm that is consistent with the result of XRD spectrum. By the optical transmission curve, not only the high transmission rate over 85 percent in the visible spectrum between 400 nm and 700 nm was showed but also the band gap 3.1 eV was estimated. And all these parameters can meet the demand of the large area module of GIGS solar cell. The result is that using alloy target and Ar gas, and controlling the appropriate pressure of oxygen, we can get directional, condensed, uniform, high transmitting rate, low

  14. SIMULATION AND IMPLEMENTATION OF CURRENT CONTROL OF BRUSHLESS DC MOTOR BASED ON A COMMON DC SIGNAL

    Directory of Open Access Journals (Sweden)

    J.Karthikeyan

    2010-06-01

    Full Text Available The objective of this project is to build a simple current controlled modulation technique for brushless dc motors. In electric traction and most other applications, a wide range of speed and torque control of the electric motor is required. The dc machine fulfills these requirements, but the dc machine requires constant maintenance. But the brushless permanent magnet motors do not have brushes and so they require less maintenance only. Brushless dc motors are widely used in applications which require wide range of speed and torque control because of its low inertia, fast response, high reliability and maintenance free. This current controlled technique is based on the generation of quasi- square wave currents using only one controller for the three phases. The current control strategy uses a triangular carrier for the power transistors which is simpler and more accuratethan any other options. The advantages of this technique are: a The stator currents are completely characterized by their maximum amplitude , b The three phases are controlled with the same dc component , and then the phase currents are kept at exactly the same magnitude I max, c The dc link current measurement is not required .d phase currents are kept balanced and phase over currents are eliminated.

  15. The structure, surface topography and mechanical properties of Si-C-N films fabricated by RF and DC magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Shi Zhifeng, E-mail: scut0533@126.com [School of Materials Science and Engineering, South China University of Technology, Guangzhou 510641 (China); Wang Yingjun, E-mail: imwangyj@163.com [School of Materials Science and Engineering, South China University of Technology, Guangzhou 510641 (China); Du Chang [School of Materials Science and Engineering, South China University of Technology, Guangzhou 510641 (China); Huang Nan [Key Lab. for Advanced Technologies of Materials, Ministry of Education, Southwest Jiaotong University, 610031 Chengdu (China); Wang Lin; Ning Chengyun [School of Materials Science and Engineering, South China University of Technology, Guangzhou 510641 (China)

    2011-12-01

    Silicon carbon nitride thin films were deposited on Co-Cr alloy under varying deposition conditions such as sputtering power and the partial pressure ratio of N{sub 2} to Ar by radio frequency and direct current magnetron sputtering techniques. The chemical bonding configurations, surface topography and hardness were characterized by means of X-ray photoelectron spectroscopy, atomic force microscopy and nano-indentation technique. The sputtering power exhibited important influence on the film composition, chemical bonding configurations and surface topography, the electro-negativity had primary effects on chemical bonding configurations at low sputtering power. A progressive densification of the film microstructure occurring with the carbon fraction was increased. The films prepared by RF magnetron sputtering, the relative content of the Si-N bond in the films increased with the sputtering power increased, and Si-C and Si-Si were easily detachable, and C-O, N-N and N-O on the film volatile by ion bombardment which takes place very frequently during the film formation process. With the increase of sputtering power, the films became smoother and with finer particle growth. The hardness varied between 6 GPa and 11.23 GPa depending on the partial pressure ratio of N{sub 2} to Ar. The tribological characterization of Co-Cr alloy with Si-C-N coating sliding against UHMWPE counter-surface in fetal bovine serum, shows that the wear resistance of the Si-C-N coated Co-Cr alloy/UHMWPE sliding pair show much favourable improvement over that of uncoated Co-Cr alloy/UHMWPE sliding pair. This study is important for the development of advanced coatings with tailored mechanical and tribological properties.

  16. The structural properties of CdS deposited by chemical bath deposition and pulsed direct current magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Lisco, F., E-mail: F.Lisco@lboro.ac.uk [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire, LE11 3TU (United Kingdom); Kaminski, P.M.; Abbas, A.; Bass, K.; Bowers, J.W.; Claudio, G. [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire, LE11 3TU (United Kingdom); Losurdo, M. [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR, via Orabona 4, 70126 Bari (Italy); Walls, J.M. [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire, LE11 3TU (United Kingdom)

    2015-05-01

    Cadmium sulphide (CdS) thin films were deposited by two different processes, chemical bath deposition (CBD), and pulsed DC magnetron sputtering (PDCMS) on fluorine doped-tin oxide coated glass to assess the potential advantages of the pulsed DC magnetron sputtering process. The structural, optical and morphological properties of films obtained by CBD and PDCMS were investigated using X-ray photoelectron spectroscopy, X-ray diffraction, scanning and transmission electron microscopy, spectroscopic ellipsometry and UV-Vis spectrophotometry. The as-grown films were studied and comparisons were drawn between their morphology, uniformity, crystallinity, and the deposition rate of the process. The highest crystallinity is observed for sputtered CdS thin films. The absorption in the visible wavelength increased for PDCMS CdS thin films, due to the higher density of the films. The band gap measured for the as-grown CBD-CdS is 2.38 eV compared to 2.34 eV for PDCMS-CdS, confirming the higher density of the sputtered thin film. The higher deposition rate for PDCMS is a significant advantage of this technique which has potential use for high rate and low cost manufacturing. - Highlights: • Pulsed DC magnetron sputtering (PDCMS) of CdS films • Chemical bath deposition of CdS films • Comparison between CdS thin films deposited by chemical bath and PDCMS techniques • High deposition rate deposition for PDCMS deposition • Uniform, pinhole free CdS thin films.

  17. The role of target-to-substrate distance on the DC magnetron sputtered zirconia thin films' bioactivity

    Energy Technology Data Exchange (ETDEWEB)

    Thaveedeetrakul, Arisara [Department of Chemical Engineering, King Mongkut' s University of Technology Thonburi, Bangkok (Thailand); Witit-anun, Nirun [Department of Physics, Burapha University, Chon Buri (Thailand); Thailand Center of Excellence in Physics, CHE, Ministry of Education, Bangkok (Thailand); Boonamnuayvitaya, Virote, E-mail: virote.boo@kmutt.ac.th [Department of Chemical Engineering, King Mongkut' s University of Technology Thonburi, Bangkok (Thailand)

    2012-01-15

    Zirconium dioxide thin films were deposited on 316L-stainless steel type substrates using DC unbalanced magnetron sputtering. The process parameter of this work was the target-to-substrate distance (d{sub t-s}), which was varied from 60 to 120 mm. The crystal structure and surface topography of zirconium dioxide thin films were characterized by X-ray diffraction (XRD) and atomic force microscopy (AFM). The results demonstrate that all of the ZrO{sub 2} thin films are composed monoclinic phase. The film sputtered at short d{sub t-s} (60 mm) shows a rather heterogeneous, uneven surface. The grain size, roughness, and thickness of thin films were decreased by increasing d{sub t-s}. The bioactivity was assessed by investigating the formation of hydroxyapatite (Ca{sub 10}(PO{sub 4}){sub 6}(OH){sub 2}) on the thin film surface soaked in simulated body fluids (SBF) for 7 days. XRD and scanning electron microscopy (SEM) were used to verify the formation of apatite layers on the samples. Bone-like apatites were formed on the surface of the ZrO{sub 2} thin film in SBF immersion experiments. A nanocrystalline hydroxyapatite (HA) with a particle size of 2-4 {mu}m was deposited. Higher crystallinity of HA on the surface was observed when the distance d{sub t-s} increased to more than 80 mm. Therefore, it seems that a d{sub t-s} greater than 80 mm is an important sputtering condition for inducing HA on the zirconia film.

  18. High Voltage Coil Current Sensor for DC-DC Converters Employing DDCC

    Directory of Open Access Journals (Sweden)

    M. Drinovsky

    2015-12-01

    Full Text Available Current sensor is an integral part of every switching converter. It is used for over-current protection, regulation and in case of multiphase converters for balancing. A new high voltage current sensor for coil-based current sensing in DC-DC converters is presented. The sensor employs DDCC with high voltage input stage and gain trimming. The circuit has been simulated and implemented in 0.35 um BCD technology as part of a multiphase DC-DC converter where its function has been verified. The circuit is able to sustain common mode voltage on the input up to 40 V, it occupies 0.387*0.345 mm2 and consumes 3.2 mW typically.

  19. Analysis of Electric Vehicle DC High Current Conversion Technology

    Science.gov (United States)

    Yang, Jing; Bai, Jing-fen; Lin, Fan-tao; Lu, Da

    2017-05-01

    Based on the background of electric vehicles, it is elaborated the necessity about electric energy accurate metering of electric vehicle power batteries, and it is analyzed about the charging and discharging characteristics of power batteries. It is needed a DC large current converter to realize accurate calibration of power batteries electric energy metering. Several kinds of measuring methods are analyzed based on shunts and magnetic induction principle in detail. It is put forward power batteries charge and discharge calibration system principle, and it is simulated and analyzed ripple waves containing rate and harmonic waves containing rate of power batteries AC side and DC side. It is put forward suitable DC large current measurement methods of power batteries by comparing different measurement principles and it is looked forward the DC large current measurement techniques.

  20. Research on transient hysteresis current control strategy of DC-DC converter

    Science.gov (United States)

    Zhang, Ting; Wang, Zu-liang; Zhao, Yu-kai

    2017-01-01

    In order to improve the dynamic performance of DC-DC converter, transient hysteresis current control strategy is proposed which is based on parallel computing and combinational logic. By making a comparison between the real-time inductor current and the threshold inductor current, the switch is controlled more accurately. Under the Matlab/Simulink environment, the process of the Buck-Boost converter was simulated. The simulation results show that the transient hysteresis current control strategy can effectively overcome the disadvantages when load changes or input voltage disturbance occurs, it posses high load regulation and short dynamic response time, and it verifies the feasibility of the proposed strategy.

  1. Blocking layer effect on dye-sensitized solar cells assembled with TiO2 nanorods prepared by dc reactive magnetron sputtering

    OpenAIRE

    Meng Lijian; Li Can

    2011-01-01

    Three different thickness dense TiO2 (150 nm, 300 nm and 450 nm respectively) films were deposited on ITO substrates by dc reactive magnetron sputtering technique. These dense TiO2 films were used as the blocking layers. After that, TiO2 nanorod films were deposited on these dense TiO2 films by same technique. Both the dense and nanorod TiO2 films have an anatase phase. The dense TiO2 films have an orientation along the [101] direction and the TiO2 nanorod films show a very strong orientation...

  2. The effect of increasing V content on the structure, mechanical properties and oxidation resistance of Ti–Si–V–N films deposited by DC reactive magnetron sputtering

    OpenAIRE

    Fernandes, Filipe; Loureiro, A.; Polcar, Tomas; Cavaleiro, Albano

    2014-01-01

    FERNANDES, F. [et al.] - The effect of increasing V content on the structure, mechanical properties and oxidation resistance of Ti–Si–V–N films deposited by DC reactive magnetron sputtering. "Applied Surface Science". ISSN 0169-4332. Vol. 289 (2014) p. 114-123 In the last years, vanadium rich films have been introduced as possible candidates for self-lubrication at high temperatures, based on the formation of V2O5 oxide. The aim of this investigation was to study the effect of V additions ...

  3. Deposition and Characterization of Molybdenum Thin Film Using Direct Current Magnetron and Atomic Force Microscopy

    Directory of Open Access Journals (Sweden)

    Muhtade Mustafa Aqil

    2017-01-01

    Full Text Available In this paper, pure molybdenum (Mo thin film has been deposited on blank Si substrate by DC magnetron sputtering technique. The deposition condition for all samples has not been changed except for the deposition time in order to study the influence of time on the thickness and surface morphology of molybdenum thin film. The surface profiler has been used to measure the surface thickness. Atomic force microscopy technique was employed to investigate the roughness and grain structure of Mo thin film. The thickness and grain of molybdenum thin film layer has been found to increase with respect to time, while the surface roughness decreases. The average roughness, root mean square roughness, surface skewness, and surface kurtosis parameters are used to analyze the surface morphology of Mo thin film. Smooth surface has been observed. From grain analysis, a uniform grain distribution along the surface has been found. The obtained results allowed us to decide the optimal time to deposit molybdenum thin film layer of 20–100 nm thickness and subsequently patterned as electrodes (source/drain in carbon nanotube-channel transistor.

  4. Corrosion resistance of zirconium oxynitride coatings deposited via DC unbalanced magnetron sputtering and spray pyrolysis-nitriding

    Energy Technology Data Exchange (ETDEWEB)

    Cubillos, G.I., E-mail: gcubillos@unal.edu.co [Department of Chemistry, Group of Materials and Chemical Processes, Universidad Nacional de Colombia, Av. Cra. 30 No 45-03, Bogotá (Colombia); Bethencourt, M., E-mail: manuel.bethencourt@uca.es [Department of Materials Science, Metallurgy Engineering and Inorganic Chemistry, International Campus of Excellence of the Sea - CEI-MAR, University of Cadiz, Avda. República Saharaui s/n, 11510 Puerto Real, Cádiz (Spain); Olaya, J.J., E-mail: jjolayaf@unal.edu.co [Faculty of Engineering, Group of Materials and Chemical Processes, Universidad Nacional de Colombia, Av. Cra. 30 No 45-03, Bogotá (Colombia)

    2015-02-01

    Highlights: • New ZrO{sub x}N{sub y} films were deposited on stainless steel 316L using PSY-N and UBMS. • ZrO{sub x}N{sub y} rhombohedral polycrystalline film grew with PSY-N. • Zr{sub 2}ON{sub 2} crystalline structures, mostly oriented along the (2 2 2) plane, grew with UBMS. • Layers improved corrosion behavior in NaCl media, especially those deposited by UBMS. - Abstract: ZrO{sub x}N{sub y}/ZrO{sub 2} thin films were deposited on stainless steel using two different methods: ultrasonic spray pyrolysis-nitriding (SPY-N) and the DC unbalanced magnetron sputtering technique (UBMS). Using the first method, ZrO{sub 2} was initially deposited and subsequently nitrided in an anhydrous ammonia atmosphere at 1023 K at atmospheric pressure. For UBMS, the film was deposited in an atmosphere of air/argon with a Φair/ΦAr flow ratio of 3.0. Structural analysis was carried out through X-ray diffraction (XRD), and morphological analysis was done through scanning electron microscopy (SEM) and atomic force microscopy (AFM). Chemical analysis was carried out using X-ray photoelectron spectroscopy (XPS). ZrO{sub x}N{sub y} rhombohedral polycrystalline film was produced with spray pyrolysis-nitriding, whereas using the UBMS technique, the oxynitride films grew with cubic Zr{sub 2}ON{sub 2} crystalline structures preferentially oriented along the (2 2 2) plane. Upon chemical analysis of the surface, the coatings exhibited spectral lines of Zr3d, O1s, and N1s, characteristic of zirconium oxynitride/zirconia. SEM analysis showed the homogeneity of the films, and AFM showed morphological differences according to the deposition technique of the coatings. Zirconium oxynitride films enhanced the stainless steel's resistance to corrosion using both techniques. The protective efficacy was evaluated using electrochemical techniques based on linear polarization (LP). The results indicated that the layers provide good resistance to corrosion when exposed to chloride

  5. Effect of ambient combinations of argon, oxygen, and hydrogen on the properties of DC magnetron sputtered indium tin oxide films

    Energy Technology Data Exchange (ETDEWEB)

    Marikkannan, M. [Department of Materials Science, School of Chemistry, Madurai Kamaraj University, Tamil Nadu, Madurai-625021 (India); Subramanian, M.; Tanemura, M. [Department of Frontier Materials, Graduate School of Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan); Mayandi, J., E-mail: pearce@mtu.edu, E-mail: jeyanthinath@yahoo.co.in [Department of Materials Science, School of Chemistry, Madurai Kamaraj University, Tamil Nadu, Madurai-625021 (India); Department of Materials Science and Engineering, Michigan Technological University (United States); Vishnukanthan, V. [Department of Physics, Centre for Materials Science and Nanotechnology, University of Oslo, P.O. Box 1126 Blindern, N-0318 Oslo (Norway); Pearce, J. M., E-mail: pearce@mtu.edu, E-mail: jeyanthinath@yahoo.co.in [Department of Materials Science and Engineering, Michigan Technological University (United States); Department of Electrical and Computer Engineering, Michigan Technological University (United States)

    2015-01-15

    Sputtering has been well-developed industrially with singular ambient gases including neutral argon (Ar), oxygen (O{sub 2}), hydrogen (H{sub 2}) and nitrogen (N{sub 2}) to enhance the electrical and optical performances of indium tin oxide (ITO) films. Recent preliminary investigation into the use of combined ambient gases such as an Ar+O{sub 2}+H{sub 2} ambient mixture, which was suitable for producing high-quality (low sheet resistance and high optical transmittance) of ITO films. To build on this promising preliminary work and develop deeper insight into the effect of ambient atmospheres on ITO film growth, this study provides a more detailed investigation of the effects of ambient combinations of Ar, O{sub 2}, H{sub 2} on sputtered ITO films. Thin films of ITO were deposited on glass substrates by DC magnetron sputtering using three different ambient combinations: Ar, Ar+O{sub 2} and Ar+O{sub 2}+H{sub 2}. The structural, electrical and optical properties of the three ambient sputtered ITO films were systematically characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM), Raman spectroscopy, four probe electrical conductivity and optical spectroscopy. The XRD and Raman studies confirmed the cubic indium oxide structure, which is polycrystalline at room temperature for all the samples. AFM shows the minimum surface roughness of 2.7 nm for Ar+O{sub 2}+H{sub 2} sputtered thin film material. The thickness of the films was determined by the cross sectional SEM analysis and its thickness was varied from 920 to 817 nm. The columnar growth of ITO films was also discussed here. The electrical and optical measurements of Ar+O{sub 2}+H{sub 2} ambient combinations shows a decreased sheet resistance (5.06 ohm/□) and increased optical transmittance (69%) than other samples. The refractive index and packing density of the films were projected using optical transmission spectrum. From the observed results the Ar+O{sub 2}+H

  6. Effect of ambient combinations of argon, oxygen, and hydrogen on the properties of DC magnetron sputtered indium tin oxide films

    Directory of Open Access Journals (Sweden)

    M. Marikkannan

    2015-01-01

    Full Text Available Sputtering has been well-developed industrially with singular ambient gases including neutral argon (Ar, oxygen (O2, hydrogen (H2 and nitrogen (N2 to enhance the electrical and optical performances of indium tin oxide (ITO films. Recent preliminary investigation into the use of combined ambient gases such as an Ar+O2+H2 ambient mixture, which was suitable for producing high-quality (low sheet resistance and high optical transmittance of ITO films. To build on this promising preliminary work and develop deeper insight into the effect of ambient atmospheres on ITO film growth, this study provides a more detailed investigation of the effects of ambient combinations of Ar, O2, H2 on sputtered ITO films. Thin films of ITO were deposited on glass substrates by DC magnetron sputtering using three different ambient combinations: Ar, Ar+O2 and Ar+O2+H2. The structural, electrical and optical properties of the three ambient sputtered ITO films were systematically characterized by X-ray diffraction (XRD, atomic force microscopy (AFM, scanning electron microscopy (SEM, Raman spectroscopy, four probe electrical conductivity and optical spectroscopy. The XRD and Raman studies confirmed the cubic indium oxide structure, which is polycrystalline at room temperature for all the samples. AFM shows the minimum surface roughness of 2.7 nm for Ar+O2+H2 sputtered thin film material. The thickness of the films was determined by the cross sectional SEM analysis and its thickness was varied from 920 to 817 nm. The columnar growth of ITO films was also discussed here. The electrical and optical measurements of Ar+O2+H2 ambient combinations shows a decreased sheet resistance (5.06 ohm/□ and increased optical transmittance (69% than other samples. The refractive index and packing density of the films were projected using optical transmission spectrum. From the observed results the Ar+O2+H2 ambient is a good choice to enhance the total optoelectronic properties of the ITO

  7. XANES and EXAFS study of the TiN Thin films grown by the pulsed DC sputtering technique assisted by balanced magnetron

    Energy Technology Data Exchange (ETDEWEB)

    Duarte M, A.; Esparza P, H.; Gonzalez V, C. [Centro de Investigacion en Materiales Avanzados, S. C., Miguel de Cervantes 120, Complejo Industrial Chihuahua Chihuahua, Chih. 31109 (Mexico); Yocupicio, I. [Universidad de Sonora, Unidad Regional Sur Lazaro Cardenas No. 100 Col. Fco. Villa, Navojoa, Sonora (Mexico)

    2007-07-01

    A series of different Ti{sub x}N{sub y} thin films were grown by the DC-sputtering technique. The purpose for this work was to study through XAS interpretation, how the different amounts of N{sub 2} during growing thin TiN thin films, affects the stoichiometry of the TiN deposited. Also the results obtained determinate how to interpret the spectra to see the different valences of Ti in TiN, are working. The results were supported with the EXAFS and XANES analysis. This work concludes the adequate conditions for this experiment to obtain TiN as thin film by the DC sputtering assisted by pulsed balanced magnetron at room temperature and concludes which XANES spectra are the finger print for valences of Ti. (Author)

  8. The deposition of low temperature sputtered In{sub 2}O{sub 3} films using pulsed d.c magnetron sputtering from a powder target

    Energy Technology Data Exchange (ETDEWEB)

    Karthikeyan, Sreejith, E-mail: fsreejit@umn.edu [Materials and Physics Research Centre, University of Salford, The Crescent, Salford, M5 4WT (United Kingdom); Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN 55414 (United States); Hill, Arthur E.; Pilkington, Richard D. [Materials and Physics Research Centre, University of Salford, The Crescent, Salford, M5 4WT (United Kingdom)

    2014-01-01

    Transparent conductive oxide layers are widely used in various applications such as solar cells, touch screen displays, heatable glasses, etc. This present work describes the deposition of transparent and conducting In{sub 2}O{sub 3} films from In{sub 2}O{sub 3} powdered targets using a pulsed d.c magnetron sputtering technique without additional substrate heating or substrate biasing. The films deposited at various oxygen concentrations were approximately 500 nm thick, were pin-hole free and well adhered to the glass substrates. The material characteristics of the films were analysed using X-ray diffraction, four point probe, hot probe, UV–vis spectroscopy, atomic force microscopy and profilometry. Structural and electrical analyses revealed that the films were crystalline and highly conductive when sputtered in the absence of oxygen but a dramatic change in resistivity was observed when oxygen was introduced during the deposition. Resistivity increased from 0.004 Ω cm (no oxygen) to 5 Ω cm with 10% oxygen. - Highlights: • In{sub 2}O{sub 3} films deposited using pulsed d.c magnetron sputtering (PdcMS). • Films deposited without the aid of any additional heating or substrate heating. • Single phase, conductive films deposited with PdcMS technique with no heating. • Low temperature techniques are important application in flexible solar cells. • The conductivity of the films controlled through oxygen flow during film growth.

  9. Monitoring dc stray current corrosion at sheet pile structures

    NARCIS (Netherlands)

    Peelen, W.H.A.; Neeft, E.A.C.; Leegwater, G.; Kanten-Roos, W. van; Courage, W.M.G.

    2012-01-01

    Steel is discarded by railway owners as a material for underground structures near railway lines, due to uncertainty over increased corrosion by DC stray currents stemming from the traction power system. This paper presents a large scale field test in which stray currents interference of a sheet pil

  10. DC-Voltage Fluctuation Elimination Through a DC-Capacitor Current Control for DFIG Converters Under Unbalanced Grid Voltage Conditions

    DEFF Research Database (Denmark)

    Liu, Changjin; Xu, Dehong; Zhu, Nan;

    2013-01-01

    Unbalanced grid voltage causes a large second-order harmonic current in the dc-link capacitors as well as dc-voltage fluctuation, which potentially will degrade the lifespan and reliability of the capacitors in voltage source converters. This paper proposes a novel dc-capacitor current control...... method for a grid-side converter (GSC) to eliminate the negative impact of unbalanced grid voltage on the dc-capacitors. In this method, a dc-capacitor current control loop, where a negative-sequence resonant controller is used to increase the loop gain, is added to the conventional GSC current control...... loop. The rejection capability to the unbalanced grid voltage and the stability of the proposed control system are discussed. The second-order harmonic current in the dc capacitor as well as dc-voltage fluctuation is very well eliminated. Hence, the dc capacitors will be more reliable under unbalanced...

  11. The Effect of Ion Current Density on Target Etching in Radio Frequency-Magnetron Sputtering Process

    Institute of Scientific and Technical Information of China (English)

    王庆; 王永富; 巴德纯; 岳向吉

    2012-01-01

    The effect of ion current density of argon plasma on target sputtering in magnetron sputtering process was investigated. Using home-made ion probe with computer-based data acquisition system, the ion current density as functions of discharge power, gas pressure and positions was measured. A double-hump shape was found in ion current density curve after the analysis of the effects of power and pressure. The data demonstrate that ion current density increases with the increase in gas pressure in spite of slightly at the double-hump site, sharply at wave-trough and side positions. Simultaneously, the ion current density increases upon increase in power. Es- pecially, the ion current density steeply increases at the double-hump site. The highest energy of the secondary electrons arising from Larmor precession was found at the double-hump position, which results in high ion density. The target was etched seriously at the double-hump position due to the high ion density there. The data indicates that the increase in power can lead to a high sputtering speed rate.

  12. Current patterns and orbital magnetism in mesoscopic dc transport.

    Science.gov (United States)

    Walz, Michael; Wilhelm, Jan; Evers, Ferdinand

    2014-09-26

    We present ab initio calculations of the local current density j(r) as it arises in dc-transport measurements. We discover pronounced patterns in the local current density, ring currents ("eddies"), that go along with orbital magnetism. Importantly, the magnitude of the ring currents can exceed the (average) transport current by orders of magnitude. We find associated magnetic fields that exhibit drastic fluctuations with field gradients reaching 1  T nm⁻¹ V⁻¹. The relevance of our observations for spin relaxation in systems with very weak spin-orbit interaction, such as organic semiconductors, is discussed. In such systems, spin relaxation induced by bias driven orbital magnetism competes with relaxation induced by the hyperfine interaction and appears to be of similar strength. We propose a NMR-type experiment in the presence of dc-current flow to observe the spatial fluctuations of the induced magnetic fields.

  13. Extracting DC bus current information for optimal phase correction and current ripple in sensorless brushless DC motor drive

    Institute of Scientific and Technical Information of China (English)

    Zu-sheng HO; Chii-maw UANG; Ping-chieh WANG

    2014-01-01

    Brushless DC motor (BLDCM) sensorless driving technology is becoming increasingly established. However, op-timal phase correction still relies on complex calculations or algorithms. In finding the correct commutation point, the problem of phase lag is introduced. In this paper, we extract DC bus current information for auto-calibrating the phase shift to obtain the correct commutation point and optimize the control of BLDC sensorless driving. As we capture only DC bus current information, the original shunt resistor is used in the BLDCM driver and there is no need to add further current sensor components. Software processing using only simple arithmetic operations successfully accomplishes the phase correction. Experimental results show that the proposed method can operate accurately and stably at low or high speed, with light or heavy load, and is suitable for practical applications. This approach will not increase cost but will achieve the best performance/cost ratio and meet market expectations.

  14. A current-mode buck DC-DC controller with adaptive on-time control

    Energy Technology Data Exchange (ETDEWEB)

    Li Yanming; Lai Xinquan; Ye Qiang; Yuan Bing; Chen Fuji [Institute of Electronic CAD, Xidian University, Xi' an 710071 (China); Jia Xinzhang, E-mail: ymli2004@126.co, E-mail: xqlai@mail.xidian.edu.c [Microelectronics Institute, Xidian University, Xi' an 710071 (China)

    2009-02-15

    A current-mode buck DC-DC controller based on adaptive on-time (AOT) control is presented. The on-time is obtained by the techniques of input feedforward and output feedback, and the adaptive control is achieved by a sample-hold and time-ahead circuit. The AOT current-mode control scheme not only obtains excellent transient response speed, but also achieves the independence of loop stability on output capacitor ESR. In addition, the AOT current-mode control does not have subharmonic oscillation phenomenon seen in fixed frequency peak current-mode control, so there is no need of the slope compensation circuit. The auto-skip pulse frequency modulation (PFM) mode improves the conversion efficiency of light load effectively. The controller has been fabricated with UMC 0.6-mum BCD process successfully and the detailed experimental results are shown.

  15. High Current Planar Transformer for Very High Efficiency Isolated Boost DC-DC Converters

    DEFF Research Database (Denmark)

    Pittini, Riccardo; Zhang, Zhe; Andersen, Michael A. E.

    2014-01-01

    This paper presents a design and optimization of a high current planar transformer for very high efficiency dc-dc isolated boost converters. The analysis considers different winding arrangements, including very high copper thickness windings. The analysis is focused on the winding ac-resistance a......This paper presents a design and optimization of a high current planar transformer for very high efficiency dc-dc isolated boost converters. The analysis considers different winding arrangements, including very high copper thickness windings. The analysis is focused on the winding ac......-resistance and transformer leakage inductance. Design and optimization procedures are validated based on an experimental prototype of a 6 kW dcdc isolated full bridge boost converter developed on fully planar magnetics. The prototype is rated at 30-80 V 0-80 A on the low voltage side and 700-800 V on the high voltage side...... with a peak efficiency of 97.8% at 80 V 3.5 kW. Results highlights that thick copper windings can provide good performance at low switching frequencies due to the high transformer filling factor. PCB windings can also provide very high efficiency if stacked in parallel utilizing the transformer winding window...

  16. Speed Control Analysis of Brushless DC Motor Based on Maximum Amplitude DC Current Feedback

    Directory of Open Access Journals (Sweden)

    Hassan M.A.A.

    2014-07-01

    Full Text Available This paper describes an approach to develop accurate and simple current controlled modulation technique for brushless DC (BLDC motor drive. The approach is applied to control phase current based on generation of quasi-square wave current by using only one current controller for the three phases. Unlike the vector control method which is complicated to be implemented, this simple current modulation technique presents advantages such as phase currents are kept in balance and the current is controlled through only one dc signal which represent maximum amplitude value of trapezoidal current (Imax. This technique is performed with Proportional Integral (PI control algorithm and triangular carrier comparison method to generate Pulse Width Modulation (PWM signal. In addition, the PI speed controller is incorporated with the current controller to perform desirable speed operation of non-overshoot response. The performance and functionality of the BLDC motor driver are verified via simulation by using MATLAB/SIMULINK. The simulation results show the developed control system performs desirable speed operation of non-overshoot and good current waveforms.

  17. High-rate low-temperature dc pulsed magnetron sputtering of photocatalytic TiO2films: the effect of repetition frequency

    Directory of Open Access Journals (Sweden)

    Strýhal Z

    2007-01-01

    Full Text Available AbstractThe article reports on low-temperature high-rate sputtering of hydrophilic transparent TiO2thin films using dc dual magnetron (DM sputtering in Ar + O2mixture on unheated glass substrates. The DM was operated in a bipolar asymmetric mode and was equipped with Ti(99.5 targets of 50 mm in diameter. The substrate surface temperature Tsurfmeasured by a thermostrip was less than 180 °C for all experiments. The effect of the repetition frequency frwas investigated in detail. It was found that the increase of frfrom 100 to 350 kHz leads to (a an improvement of the efficiency of the deposition process that results in a significant increase of the deposition rate aDof sputtered TiO2films and (b a decrease of peak pulse voltage and sustaining of the magnetron discharge at higher target power densities. It was demonstrated that several hundreds nm thick hydrophilic TiO2films can be sputtered on unheated glass substrates at aD = 80 nm/min, Tsurf < 180 °C when high value of fr = 350 kHz was used. Properties of a thin hydrophilic TiO2film deposited on a polycarbonate substrate are given.

  18. The TCR of Ni24.9Cr72.5Si2.6 thin films deposited by DC and RF magnetron sputtering

    Science.gov (United States)

    Cheng, Bing; Yin, Yijun; Han, Jianqiang; Zhang, Jie

    2017-06-01

    The temperature coefficient of resistance (abbreviated as TCR) of thin film resistors on some sensor chips, such as thermal converters, should be less than several ppm/°C. However, the TCR of reported thin films is larger than 5 ppm/°C. In this paper, Ni24.9Cr72.5Si2.6 films are deposited on silicon dioxide film by DC and RF magnetron sputtering. Then as-deposited films are annealed at 450 °C under different durations in N2 atmosphere. The sheet resistance of thin films with various thickness and annealing time are measured by the four probe resistivity test system at temperature of 20, 50, 100, 150, and 200 °C and then the TCR of thin films are calculated. Experimental results show that the film with the TCR of only -0.86 ppm/°C can be achieved by RF magnetron sputtering and appropriate annealing conditions. Project supported by the National Natural Science Foundation of China (Nos. 51377025, 61376114)

  19. Start-stop and recuperation: DC/DC current inverters with integrated double-layer condensers; Start-Stopp und Rekuperation: DC/DC-Wandler mit integrierten Doppelschichtkondensatoren

    Energy Technology Data Exchange (ETDEWEB)

    Igel, Juergen; Ollhaeuser, Helmut; Jeuck, Marc; Apfelbacher, Thomas [Alcoa/AFL Europe GmbH, Frickenhausen (Germany)

    2008-09-15

    Start-stop systems may be made more efficient, and energy recovery in regenerative brakes may be made more economical. The contribution describes a new DC/DC current inverter with integrated double-layer condensers developed by the electric/electronics department of Alcoa. The so-called Energy Conversion Module (ECM) will result in considerable fuel savings and also help to stabilize board grids which are nearing their limits because of the increasing number of electrified service aggregates. Motor car producers are currently testing the module. (orig.)

  20. Measurement of deposition rate and ion energy distribution in a pulsed dc magnetron sputtering system using a retarding field analyzer with embedded quartz crystal microbalance

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, Shailesh, E-mail: shailesh.sharma6@mail.dcu.ie [Dublin City University, Glasnevin, Dublin 9 (Ireland); Impedans Limited, Chase House, City Junction Business Park, Northern Cross, D17 AK63, Dublin 17 (Ireland); Gahan, David, E-mail: david.gahan@impedans.com; Scullin, Paul; Doyle, James; Lennon, Jj; Hopkins, M. B. [Impedans Limited, Chase House, City Junction Business Park, Northern Cross, D17 AK63, Dublin 17 (Ireland); Vijayaraghavan, Rajani K.; Daniels, Stephen [Dublin City University, Glasnevin, Dublin 9 (Ireland)

    2016-04-15

    A compact retarding field analyzer with embedded quartz crystal microbalance has been developed to measure deposition rate, ionized flux fraction, and ion energy distribution arriving at the substrate location. The sensor can be placed on grounded, electrically floating, or radio frequency (rf) biased electrodes. A calibration method is presented to compensate for temperature effects in the quartz crystal. The metal deposition rate, metal ionization fraction, and energy distribution of the ions arriving at the substrate location are investigated in an asymmetric bipolar pulsed dc magnetron sputtering reactor under grounded, floating, and rf biased conditions. The diagnostic presented in this research work does not suffer from complications caused by water cooling arrangements to maintain constant temperature and is an attractive technique for characterizing a thin film deposition system.

  1. Structure and properties of Al-doped ZnO transparent conductive thin-films prepared by asymmetric bipolar pulsed DC reactive magnetron sputtering.

    Science.gov (United States)

    Hsu, Fu-Yung; Chen, Tse-Hao; Peng, Kun-Cheng

    2009-07-01

    Transparent conductive thin-films of aluminum-doped zinc oxide (AZO) were deposited on STN-glass substrates by an asymmetric bipolar pulsed DC (ABPDC) reactive magnetron sputtering system. Two different alloys, Zn-1.6 wt% Al and Zn-3.0 wt% Al, were used as the sputtering targets. The films consist of columnar grains with a preferred orientation of c-axis. Strong crystal distortion and high density stacking faults were observed in high resolution TEM micrographs. The full-width at half-maximum (FWHM) of the (002) rocking curve has a close relationship with the resistivity of the films; the smaller the FWHM, the lower the resistivity. The lowest resistivity of 7.0 x 10(-4) omega-cm was obtained from the film deposited with Zn-1.6 wt% Al target at 200 degrees C.

  2. Measurement of deposition rate and ion energy distribution in a pulsed dc magnetron sputtering system using a retarding field analyzer with embedded quartz crystal microbalance.

    Science.gov (United States)

    Sharma, Shailesh; Gahan, David; Scullin, Paul; Doyle, James; Lennon, Jj; Vijayaraghavan, Rajani K; Daniels, Stephen; Hopkins, M B

    2016-04-01

    A compact retarding field analyzer with embedded quartz crystal microbalance has been developed to measure deposition rate, ionized flux fraction, and ion energy distribution arriving at the substrate location. The sensor can be placed on grounded, electrically floating, or radio frequency (rf) biased electrodes. A calibration method is presented to compensate for temperature effects in the quartz crystal. The metal deposition rate, metal ionization fraction, and energy distribution of the ions arriving at the substrate location are investigated in an asymmetric bipolar pulsed dc magnetron sputtering reactor under grounded, floating, and rf biased conditions. The diagnostic presented in this research work does not suffer from complications caused by water cooling arrangements to maintain constant temperature and is an attractive technique for characterizing a thin film deposition system.

  3. Predictive Trailing-Edge Modulation Average Current Control in DC-DC Converters

    Directory of Open Access Journals (Sweden)

    LASCU, D.

    2013-11-01

    Full Text Available The paper investigates predictive digital average current control (PDACC in dc/dc converters using trailing-edge modulation (TEM. The study is focused on the recurrence duty cycle equation and then stability analysis is performed. It is demonstrated that average current control using trailing-edge modulation is stable on the whole range of the duty cycle and thus design problems are highly reduced. The analysis is carried out in a general manner, independent of converter topology and therefore the results can then be easily applied for a certain converter (buck, boost, buck-boost, etc.. The theoretical considerations are confirmed for a boost converter first using the MATLAB program based on state-space equations and finally with the CASPOC circuit simulation package.

  4. A current-mode DC-DC buck converter with adaptive zero compensation

    Institute of Scientific and Technical Information of China (English)

    Yang Ling; Dai Guoding; Xu Chongwei; Liu Yuezhi

    2013-01-01

    To achieve fast transient response for a DC-DC buck converter,an adaptive zero compensation circuit is presented.The compensation resistance is dynamically adjusted according to the different output load conditions,and achieves an adequate system phase margin under the different conditions.An improved capacitor multiplier circuit is adopted to realize the minimized compensation capacitance size.In addition,analysis of the small-signal model shows the correctness of the mechanism of the proposed adaptive zero compensation technique.A currentmode DC-DC buck converter with the proposed structure has been implemented in a 0.35 μm CMOS process,and the die size is only 800 × 1040 μm2.The experimental results show that the transient undershoot/overshoot voltage and the recovery times do not exceed 40 mV and 30 μs for a load current variation from 100 mA to 1 A.

  5. Structural and mechanical properties of diamond-like carbon films deposited by direct current magnetron sputtering

    Science.gov (United States)

    Broitman, E.; Hellgren, N.; Czigány, Zs.; Twesten, R. D.; Luning, J.; Petrov, I.; Hultman, L.; Holloway, B. C.

    2003-07-01

    The microstructure, morphology, and mechanical properties of diamond-like carbon (DLC) films deposited by direct current magnetron sputtering were investigated for microelectromechanical systems applications. Film properties were found to vary markedly with the ion energy (Eion) and ion-to-carbon flux ratio (Jion/JC). Cross-sectional high-resolution transmission electron microscopy revealed an amorphous microstructure. However, the presence of nanometer-sized domains at Eion~85 eV was detected. Film stresses, σ, which were compressive in all cases, ranged from 0.5 to 3.5 GPa and depended on the flux ratio as well as ion energy. The hardness (H), Young's moduli (ɛ), and elastic recovery (R) increased with Eion to maximum values of H=27 GPa, ɛ=250 GPa, and R=68% at Eion=85 eV and Jion/JC=4.4. However, near edge x-ray absorption fine structure and electron energy-loss spectrum analysis showed that the sp2/sp3 content of the films does not change with Eion or Jion/JC. The measured change in mechanical properties without a corresponding change in sp2/sp3 ratio is not consistent with any previously published models. We suggest that, in the ranges 5 eV <=Eion<=85 eV and 1.1 <=Jion/JC<=6.8, the presence of defective graphite formed by subplanted C and Ar atoms has the dominant influence on the mechanical properties of DLC films.

  6. Reactive sputtering of δ-ZrH{sub 2} thin films by high power impulse magnetron sputtering and direct current magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Högberg, Hans, E-mail: hans.hogberg@liu.se; Tengdelius, Lina; Eriksson, Fredrik; Broitman, Esteban; Lu, Jun; Jensen, Jens; Hultman, Lars [Department of Physics, Chemistry, and Biology (IFM), Linköping University, SE-581 83 Linköping (Sweden); Samuelsson, Mattias [Impact Coatings AB, Westmansgatan 29, SE-582 16 Linköping (Sweden)

    2014-07-01

    Reactive sputtering by high power impulse magnetron sputtering (HiPIMS) and direct current magnetron sputtering (DCMS) of a Zr target in Ar/H{sub 2} plasmas was employed to deposit Zr-H films on Si(100) substrates, and with H content up to 61 at. % and O contents typically below 0.2 at. % as determined by elastic recoil detection analysis. X-ray photoelectron spectroscopy reveals a chemical shift of ∼0.7 eV to higher binding energies for the Zr-H films compared to pure Zr films, consistent with a charge transfer from Zr to H in a zirconium hydride. X-ray diffraction shows that the films are single-phase δ-ZrH{sub 2} (CaF{sub 2} type structure) at H content >∼55 at. % and pole figure measurements give a 111 preferred orientation for these films. Scanning electron microscopy cross-section images show a glasslike microstructure for the HiPIMS films, while the DCMS films are columnar. Nanoindentation yield hardness values of 5.5–7 GPa for the δ-ZrH{sub 2} films that is slightly harder than the ∼5 GPa determined for Zr films and with coefficients of friction in the range of 0.12–0.18 to compare with the range of 0.4–0.6 obtained for Zr films. Wear resistance testing show that phase-pure δ-ZrH{sub 2} films deposited by HiPIMS exhibit up to 50 times lower wear rate compared to those containing a secondary Zr phase. Four-point probe measurements give resistivity values in the range of ∼100–120 μΩ cm for the δ-ZrH{sub 2} films, which is slightly higher compared to Zr films with values in the range 70–80 μΩ cm.

  7. Synergistic effect of bias and target currents for magnetron sputtered MoS{sub 2}-Ti composite films

    Energy Technology Data Exchange (ETDEWEB)

    Buelbuel, Ferhat; Efeoglu, Ihsan [Ataturk Univ., Erzurum (Turkey). Dept. of Mechanical Engineering

    2016-07-01

    In terms of modification of the properties of MoS{sub 2}-Ti composite films, especially tribological properties, significant advances have recently been recorded. However, the commercially production of MoS{sub 2}-Ti composite films is still limited, because the production of desirable MoS{sub 2}-Ti composite coating is only possible by using closed field unbalanced magnetron systems and by the selection of convenient deposition parameters. This requirement has focused the researchers' attention on optimization of deposition parameters. This study is concentrating on the effect of the bias voltage and the target currents for MoS{sub 2}-Ti composite films deposited by pulsed magnetron sputtering (PMS). It is found that the bias and the target currents clearly affect the mechanical, structural and tribological properties of MoS{sub 2}-Ti films.

  8. Input current shaped ac-to-dc converters

    Science.gov (United States)

    1985-01-01

    Input current shaping techniques for ac-to-dc converters were investigated. Input frequencies much higher than normal, up to 20 kHz were emphasized. Several methods of shaping the input current waveform in ac-to-dc converters were reviewed. The simplest method is the LC filter following the rectifier. The next simplest method is the resistor emulation approach in which the inductor size is determined by the converter switching frequency and not by the line input frequency. Other methods require complicated switch drive algorithms to construct the input current waveshape. For a high-frequency line input, on the order of 20 kHz, the simple LC cannot be discarded so peremptorily, since the inductor size can be compared with that for the resistor emulation method. In fact, since a dc regulator will normally be required after the filter anyway, the total component count is almost the same as for the resistor emulation method, in which the filter is effectively incorporated into the regulator.

  9. Brushless DC motor Drive during Speed regulation with Current Controller

    Directory of Open Access Journals (Sweden)

    Bhikshalu Manchala

    2015-04-01

    Full Text Available Brushless DC Motor (BLDC is one of the best electrical drives that have increasing popularity, due to their high efficiency, reliability, good dynamic response and very low maintenance. Due to the increasing demand for compact & reliable motors and the evolution of low cost power semiconductor switches and permanent magnet (PM materials, brushless DC motors become popular in every application from home appliances to aerospace industry. The conventional techniques for controlling the stator phase current in a brushless DC drive are practically effective in low speed and cannot reduce the commutation torque ripple in high speed range. This paper presents the PI controller for speed control of BLDC motor. The output of the PI controllers is summed and is given as the input to the current controller. The BLDC motor is fed from the inverter where the rotor position and current controller is the input. The complete model of the proposed drive system is developed and simulated using MATLAB/Simulink software. The operation principle of using component is analysed and the simulation results are presented in this to verify the theoretical analysis.

  10. Current Source Converter Based Multi-terminal DC Wind Energy Conversion System

    Institute of Scientific and Technical Information of China (English)

    Shixiong FAN; Guangyi LIU; Zhanyong YANG; Weiwei MA; Barry W.WILLIAMS

    2013-01-01

    A current source converter based multi-terminal direct current (DC) wind energy conversion system (WECS) is proposed.The current source DC/DC converter is adopted to connect a wind turbine to an inverter with maximum power point control.Each turbine is associated with a DC source by parallel-connected to a common DC link.After DC power collection,a current source inverter (CSI) using gate turn-off components is used for the grid connection due to its flexible reactive power control and short circuit protection capabilities.For such a parallel connection configuration,the CSI operates in an input voltage control mode,which maintains the DC link voltage constant.The dynamic responses of combined mechanical and electrical systems are investigated with three different operation cases.Simulation and experimental results demonstrate the feasibility and stability of the current source DC/DC converter based multi-terminal DC WECS.

  11. Critical current measurement for design of HTS DC power cables

    Science.gov (United States)

    Watanabe, Hirofumi

    2017-02-01

    Critical currents of HTS DC power cables were calculated. In the calculation a relationship between critical current density and magnetic flux density proposed by Gömöry et al. [1] was used and the parameters used in the relationship were obtained by the critical current measurements with respect to the external magnetic field for a sample of the HTS tape. Numerical models of cables were composed and their critical currents were calculated, which showed the strong dependence on the arrangement of the HTS tapes in the cable. Critical current measurements of model cables assembled based on the calculations showed that the measured critical currents also depended on the arrangement of the HTS tapes strongly. The calculated results were compared with the experimental results, which showed that the experimental results agreed well with the calculated results.

  12. FCL: A solution to fault current problems in DC networks

    Science.gov (United States)

    Cointe, Y.; Tixador, P.; Villard, C.

    2008-02-01

    Within the context of the electric power market liberalization, DC networks have many interests compared to AC ones. New energy landscapes open the way of a diversified production. Innovative interconnection diagrams, in particular using DC buses, are under development. In this case it is not possible to defer the fault current interruption in the AC side. DC fault current cutting remains a difficult problem. FCLs (Fault Current Limiters) enable to limit the current to a preset value, lower than the theoretical short-circuit current. For this application Coated Conductors (CC) offer an excellent opportunity. Due to these promising characteristics we build a test bench and work on the implementation of these materials. The test bench is composed by 10 power amplifiers, to reach 4 kVA in many configurations of current and voltage. We carried out limiting experiments on DyBaCuO CC from EHTS, samples are about five centimeters long and many potential measuring points are pasted on the shunt to estimate the quench homogeneity. Thermal phenomena in FCLs are essential, numerical models are important to calculate the maximum temperatures. To validate these models we measure the CC temperature by depositing thermal sensors (Cu resistance) above the shunt layer and the substrate. An electrical insulation with a low thermal resistivity between the CC and the sensors is necessary. We use a thin layer of Parylene because of its good mechanical and electrical insulation properties at low temperature. The better quench behaviour of CC for temperatures close to the critical temperature has been confirmed. The measurements are in good agreement with simulations, this validates the thermal models.

  13. Protection effect of ZrO2 coating layer on LiCoO2 thin film fabricated by DC magnetron sputtering.

    Science.gov (United States)

    Noh, Jung-Pil; Jung, Ki-Taek; Jang, Min-Sun; Kwon, Tae-Hoon; Cho, Gyu-Bong; Kim, Ki-Won; Nam, Tae-Hyun

    2013-10-01

    Bare and ZrO2-coated LiCoO2 thin films were fabricated by direct current magnetron sputtering method on STS304 substrates. Deposited both films have a well-crystallized structure with (003) preferred orientation after annealing at 600 degrees C. The ZrO2-coated LiCoO2 thin film provide significantly improved cycling stability compared to bare LiCoO2 thin film at high cut-off potential (3.0-4.5 V). The improvement in electrochemical stability is attributed to the structural stability by ZrO2 coating layer.

  14. Native target chemistry during reactive dc magnetron sputtering studied by ex-situ x-ray photoelectron spectroscopy

    Science.gov (United States)

    Greczynski, G.; Mráz, S.; Schneider, J. M.; Hultman, L.

    2017-07-01

    We report x-ray photoelectron spectroscopy (XPS) analysis of native Ti target surface chemistry during magnetron sputtering in an Ar/N2 atmosphere. To avoid air exposure, the target is capped immediately after sputtering with a few-nm-thick Al overlayers; hence, information about the chemical state of target elements as a function of N2 partial pressure pN2 is preserved. Contrary to previous reports, which assume stoichiometric TiN formation, we present direct evidence, based on core-level XPS spectra and TRIDYN simulations, that the target surface is covered by TiNx with x varying in a wide range, from 0.27 to 1.18, depending on pN2. This has far-reaching consequences both for modelling of the reactive sputtering process and for everyday thin film growth where detailed knowledge of the target state is crucial.

  15. In vitro biocompatibility of Ti–Mg alloys fabricated by direct current magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Hieda, Junko, E-mail: hieda@imr.tohoku.ac.jp; Niinomi, Mitsuo; Nakai, Masaaki; Cho, Ken

    2015-09-01

    Ti–xMg (x = 17, 33, and 55 mass%) alloy films, which cannot be prepared by conventional melting processes owing to the absence of a solid-solution phase in the phase diagram, were prepared by direct current magnetron sputtering in order to investigate their biocompatibility. Ti and Mg films were also prepared by the same process for comparison. The crystal structures were examined by X-ray diffraction (XRD) analysis and the surfaces were analyzed by X-ray photoelectron spectroscopy. The Ti, Ti–xMg alloy, and Mg films were immersed in a 0.9% NaCl solution at 310 K for 7 d to evaluate the dissolution amounts of Ti and Mg. In addition, to evaluate the formation ability of calcium phosphate in vitro, the Ti, Ti–xMg alloy, and Mg films were immersed in Hanks' solution at 310 K for 30 d. Ti and Mg form solid-solution alloys because the peaks attributed to pure Ti and Mg do not appear in the XRD patterns of any of the Ti–xMg alloy films. The surfaces of the Ti–17Mg alloy and Ti–33Mg alloy films contain Ti oxides and MgO, whereas MgO is the main component of the surface oxide of the Ti–55Mg alloy and Mg films. The dissolution amounts of Ti from all films are below or near the detection limit of inductively coupled plasma-optical emission spectroscopy. On the other hand, the Ti–17Mg alloy, Ti–33Mg alloy, Ti–55Mg alloy, and Mg films exhibit Mg dissolution amounts of approximately 2.5, 1.4, 21, and 41 μg/cm{sup 2}, respectively. The diffraction peaks attributed to calcium phosphate are present in the XRD patterns of the Ti–33Mg alloy, Ti–55Mg alloy, and Mg films after the immersion in Hanks' solution. Spherical calcium phosphate particles precipitate on the surface of the Ti–33Mg film. However, many cracks are observed in the Ti–55Mg film, and delamination of the film occurs after the immersion in Hanks' solution. The Mg film is dissolved in Hanks' solution and calcium phosphate particles precipitate on the glass substrate

  16. A New PWM Modifying Technique for Reconstructing Three-phase Currents from DC Bus Current

    Science.gov (United States)

    Aoyagi, Shigehisa; Iwaji, Yoshitaka; Tobari, Kazuaki; Sakamoto, Kiyoshi

    Vector control is used to drive a DC brushless motor and generally needs current information. DC bus current detection is often adopted as a low cost method for reconstructing three-phase currents. PWM modifying techniques increase the DC pulse duration, thereby enabling easy detection of the DC bus current. However, these techniques have two problems: reducing a noise frequency and making the reconstructed current waveforms distorted by current ripple. In the techniques, modification signals are added to the three-phase voltage commands; the sum of the signals over a single cycle is zero. The authors examined several PWM modifying techniques from the points of view of noise and current distortion performance. One of the techniques had a good noise performance, and the frequency component of the noise was the same as the carrier frequency (fc). However, the reconstructed current waveforms were distorted. The total harmonic distortion (THD) varied from 1.7% to 4.1%. Another technique had a very poor noise performance, and the frequency component on the noise was one-fourth of fc. The authors developed a new PWM modifying method called “Half Pulse Shift”, which achieves the optimum noise and current distortion performance. The frequency component of the new method was two-thirds of fc, and the current waveforms were not distorted; the THD in the simulations and experiments was 0.5%-1.4% and 3.4%-3.6%, respectively.

  17. Bifurcation boundary conditions for current programmed PWM DC-DC converters at light loading

    Science.gov (United States)

    Fang, Chung-Chieh

    2012-10-01

    Three types of bifurcations (instabilities) in the PWM DC-DC converter at light loading under current mode control in continuous-conduction mode (CCM) or discontinuous-conduction mode (DCM) are analysed: saddle-node bifurcation (SNB) in CCM or DCM, border-collision bifurcation during the CCM-DCM transition, and period-doubling bifurcation in CCM. Different bifurcations occur in some particular loading ranges. Bifurcation boundary conditions separating stable regions from unstable regions in the parametric space are derived. A new methodology to analyse the SNB in the buck converter based on the peak inductor current is proposed. The same methodology is applied to analyse the other types of bifurcations and converters. In the buck converter, multiple stable/unstable CCM/DCM steady-state solutions may coexist. Possibility of multiple solutions deserves careful study, because an ignored solution may merge with a desired stable solution and make both disappear. Understanding of SNB can explain some sudden disappearances or jumps of steady-state solutions observed in switching converters.

  18. Large step-down DC-DC converters with reduced current stress

    Energy Technology Data Exchange (ETDEWEB)

    Ismail, Esam H. [Department of Electrical Engineering, College of Technological Studies, P.O. Box 35007, 36051 Al-Shaab (Kuwait)

    2009-02-15

    In this paper, several DC-DC converters with large voltage step-down ratios are introduced. A simple modification in the output section of the conventional buck and quadratic converters can effectively extend the duty-cycle range. Only two additional components (an inductor and diode) are necessary for extending the duty-cycle range. The topologies presented in this paper show an improvement in the duty-cycle (about 40%) over the conventional buck and quadratic converters. Consequently, they are well suited for extreme step-down voltage conversion ratio applications. With extended duty-cycle, the current stress on all components is reduced, leading to a significant improvement of the system losses. The principle of operation, theoretical analysis, and comparison of circuit performances with other step-down converters is discussed regarding voltage and current stress. Experimental results of one prototype rated 40-W and operating at 100 kHz are provided in this paper to verify the performance of this new family of converters. The efficiency of the proposed converters is higher than the quadratic converters. (author)

  19. A Novel Dual-input Isolated Current-Fed DC-DC Converter for Renewable Energy System

    DEFF Research Database (Denmark)

    Zhang, Zhe; Thomsen, Ole Cornelius; Andersen, Michael A. E.

    2010-01-01

    In this paper, a novel isolated current-fed DC-DC converter (boost-type) with two input power sources based on multi-transformer structure, which is suitable for fuel cells and super-capacitors hybrid energy system, is proposed and designed. With particular transformer windings connection strategy......, the proposed converter can draw power from two different DC sources with lower voltage and deliver it to the higher voltage DC bus or load individually and simultaneously. The detailed operation principle of the proposed converter has been analyzed in dual-input mode and single-input mode, respectively...

  20. Dynamic modeling of DC-DC converters with peak current control in double-stage photovoltaic grid-connected inverters

    OpenAIRE

    Garcerá Sanfeliú, Gabriel; González Medina, Raul; Figueres Amorós, Emilio; Sandia Paredes, Jesús

    2012-01-01

    In photovoltaic (PV) double-stage grid-connected inverters a high-frequency DC-DC isolation and voltage step-up stage is commonly used between the panel and the grid-connected inverter. This paper is focused on the modeling and control design of DC-DC converters with Peak Current mode Control (PCC) and an external control loop of the PV panel voltage, which works following a voltage reference provided by a maximum power point tracking (MPPT) algorithm. In the proposed overall control structur...

  1. Input-current shaped ac to dc converters

    Science.gov (United States)

    1986-01-01

    The problem of achieving near unity power factor while supplying power to a dc load from a single phase ac source of power is examined. Power processors for this application must perform three functions: input current shaping, energy storage, and output voltage regulation. The methods available for performing each of these three functions are reviewed. Input current shaping methods are either active or passive, with the active methods divided into buck-like and boost-like techniques. In addition to large reactances, energy storage methods include resonant filters, active filters, and active storage schemes. Fast voltage regulation can be achieved by post regulation or by supplementing the current shaping topology with an extra switch. Some indications of which methods are best suited for particular applications concludes the discussion.

  2. Design and implementation of a bidirectional current-controlled voltage-regulated DC-DC switched-mode converter

    CSIR Research Space (South Africa)

    Coetzer, A

    2016-01-01

    Full Text Available The design and implementation of a bidirectional current-controlled voltage-regulated DC-DC converter is presented. The converter is required to connect a battery of electrochemical cells (the battery) to an asynchronous motor-drive unit via a...

  3. In vitro biocompatibility of Ti-Mg alloys fabricated by direct current magnetron sputtering.

    Science.gov (United States)

    Hieda, Junko; Niinomi, Mitsuo; Nakai, Masaaki; Cho, Ken

    2015-09-01

    Ti-xMg (x=17, 33, and 55 mass%) alloy films, which cannot be prepared by conventional melting processes owing to the absence of a solid-solution phase in the phase diagram, were prepared by direct current magnetron sputtering in order to investigate their biocompatibility. Ti and Mg films were also prepared by the same process for comparison. The crystal structures were examined by X-ray diffraction (XRD) analysis and the surfaces were analyzed by X-ray photoelectron spectroscopy. The Ti, Ti-xMg alloy, and Mg films were immersed in a 0.9% NaCl solution at 310 K for 7d to evaluate the dissolution amounts of Ti and Mg. In addition, to evaluate the formation ability of calcium phosphate in vitro, the Ti, Ti-xMg alloy, and Mg films were immersed in Hanks' solution at 310 K for 30 d. Ti and Mg form solid-solution alloys because the peaks attributed to pure Ti and Mg do not appear in the XRD patterns of any of the Ti-xMg alloy films. The surfaces of the Ti-17 Mg alloy and Ti-33 Mg alloy films contain Ti oxides and MgO, whereas MgO is the main component of the surface oxide of the Ti-55 Mg alloy and Mg films. The dissolution amounts of Ti from all films are below or near the detection limit of inductively coupled plasma-optical emission spectroscopy. On the other hand, the Ti-17 Mg alloy, Ti-33 Mg alloy, Ti-55 Mg alloy, and Mg films exhibit Mg dissolution amounts of approximately 2.5, 1.4, 21, and 41 μg/cm(2), respectively. The diffraction peaks attributed to calcium phosphate are present in the XRD patterns of the Ti-33 Mg alloy, Ti-55 Mg alloy, and Mg films after the immersion in Hanks' solution. Spherical calcium phosphate particles precipitate on the surface of the Ti-33 Mg film. However, many cracks are observed in the Ti-55 Mg film, and delamination of the film occurs after the immersion in Hanks' solution. The Mg film is dissolved in Hanks' solution and calcium phosphate particles precipitate on the glass substrate. Consequently, it is revealed that the Ti-33 Mg

  4. Optical and chemical properties of mixed-valent rhenium oxide films synthesized by reactive DC magnetron sputtering

    Science.gov (United States)

    Murphy, Neil R.; Gallagher, Regina C.; Sun, Lirong; Jones, John G.; Grant, John T.

    2015-07-01

    Mixed-valent rhenium oxide thin films were deposited using reactive magnetron sputtering employing a metallic rhenium target within an oxygen-argon environment. The oxygen and argon flow rates were systematically varied, while the extinction coefficient, k, of the deposited layers was monitored using in situ spectroscopic ellipsometry. In situ monitoring was used to identify absorption features specific to ReO3, namely, the minimization of k brought on by the gap between interband absorption features in the UV at 310 nm and the onset of free electron absorption at wavelengths above 540 nm. Based on these results, oxygen flow ratios of 50% and 60% were shown to produce films having optical properties characteristic of ReO3, and thus, were selected for detailed ex situ characterization. Chemical analysis via X-ray photoelectron spectroscopy confirmed that all films consisted largely of ReO3, but had some contributions from Re2O3, ReO2 and Re2O7. Additional monitoring of the chemistry, as a function of environmental exposure time, indicated a correlation between structural instability and the presence of Re2O3 and Re2O7 in the films.

  5. Structural and physical properties of permalloy thin films prepared by DC magnetron sputtering at different substrate temperature

    Institute of Scientific and Technical Information of China (English)

    Fengping Wang; Ping Wu; Hong Qiu; Liqing Pan; Huanping Liu; Yue Tian; Sheng Luo

    2004-01-01

    Permalloy Ni8oFe20 films have been grown on thermal oxidized Si (111) wafers by magnetron sputtering at wellcontrolled substrate temperatures of 300, 500, 640 and 780 K in 0.65 Pa argon pressure. The base pressure was about l×l0-4 Pa. The deposition rate was about 5 nm/min for all the films. The structure of the films was studied using X-ray diffraction, scanning electron microscopy and atomic force microscopy. The composition of the films was analyzed using scanning Auger microprobe. The resistance and magnetoresistance of the films were measured using four-point probe technique. The results show that the content of oxygen in the films decreases gradually with raising substrate temperature. In addition, the surface morphology of the films presents notable change with the increasing of the substrate temperature; the residual gases and defects decrease and the grains have coalesced evidently, and then the grains have grown up obviously and the texture of (111) orientation develops gradually in the growing film.As a result, the resistivity reduces apparently and magnetoresistance ratio increases markedly with raising substrate temperature.

  6. Microstructural characterizations and hardness evaluation of d.c. reactive magnetron sputtered CrN thin films on stainless steel substrate

    Indian Academy of Sciences (India)

    Hetal N Shah; Vipin Chawla; R Jayaganthan; Davinder Kaur

    2010-04-01

    Chromium nitride (CrN) thin films were deposited on stainless steel (grade: SA304) substrate by using d.c. reactive magnetron sputtering and the influence of process parameters such as substrate temperature, pressure, and power on their microstructural characteristics were investigated in the present work. The CrN films were characterized with X-ray diffraction (XRD) to reveal the formation of different phases and its texture. The films showed the (111) preferred orientation but its intensity decreased, while intensity of peak (200) increased with increase in working pressure. The mixture of CrN and Cr2N phases were identified at low working pressure and temperature. The preferred orientations of CrN thin films are strongly influenced by sputtering conditions, thickness, and the induced residual stress in the films as observed in the present work. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) were used to characterize the morphology and surface topography of thin films, respectively. The study shows that the hardness of films strongly depends on the grain size and the film density, which are influenced by combined effect of the working pressure, temperature, and power of the sputtering process.

  7. Influence of heat treatment on the structural, morphological and optical properties of DC magnetron sputtered Ti$_{x}$Si$_{1−x}$O$_2$ films

    Indian Academy of Sciences (India)

    SURESH ADDEPALLI; UTHANNA SUDA

    2016-06-01

    Ti$_x$Si$_{1−x}$O$_2$ thin films were formed onto unheated p-silicon and quartz substrates by sputtering composite target of Ti80Si20 using reactive DC magnetron sputtering method. The as-deposited films were annealed in oxygenatmosphere at different temperatures in the range 400–900$^{\\circ}$C. X-ray photoelectron spectroscopic indicated that the as-deposited films formed at oxygen flow rate of 8 sccm were of Ti$_{0.7}$Si$_{0.3}$O$_2$. X-ray diffraction studies revealed that the as-deposited films were amorphous. The films annealed at 800$^{\\circ}$C were exhibited broad (101) peak which indicated the growth of nanocrystalline with anatase phase of TiO$_2$. The crystallite size of the films increased from 9 to 12 nm with increase of annealing temperature from 800 to 900$^{\\circ}$C, respectively, due to increase in crystallinity and decrease in defect density. XPS spectra of annealed films showed the characteristic core level binding energies of the constituent Ti$_{0.7}$Si$_{0.3}$O$_2$. Optical band gap decreased from 4.08 to 3.95 eV and the refractive index decreased from 2.11 to 2.08 in the as-deposited and the films annealed at 900$^{\\circ}$C due to decrease in the lattice strain and dislocation density.

  8. Tribological Testing, Analysis and Characterization of D.C. Magnetron Sputtered Ti-Nb-N Thin Film Coatings on Stainless Steel

    Science.gov (United States)

    Joshi, Prathmesh

    To enhance the surface properties of stainless steel, the substrate was coated with a 1μm thick coating of Ti-Nb-N by reactive DC magnetron sputtering at different N2 flow rates, substrate biasing and Nb-Ti ratio. The characterization of the coated samples was performed by the following techniques: hardness by Knoop micro-hardness tester, phase analysis by X-ray Diffraction (XRD), compositional analysis by Energy Dispersive X-ray Spectroscopy (EDS) and adhesion by scratch test. The tribology testing was performed on linearly reciprocating ball-on-plate wear testing machine and wear depth and wear volume were evaluated by white light interferometer. The micro-hardness test yielded appreciable enhancement in the surface hardness with the highest value being 1450 HK. Presence of three prominent phases namely NbN, Nb2N3 and TiN resulted from the XRD analysis. EDS analysis revealed the presence of Ti, Nb and Nitrogen. Adhesion was evaluated on the basis of critical loads for cohesive (Lc1) and adhesive (Lc2) failures with values varying between 7-12 N and 16-25 N respectively, during scratch test for coatings on SS substrates.

  9. Studies on the electrical properties of reactive DC magnetron-sputtered indium-doped silver oxide thin films: The role of oxygen

    Energy Technology Data Exchange (ETDEWEB)

    Subrahmanyam, A. [Semiconductor Physics Laboratory, Department of Physics, Indian Institute of Technology Madras, Chennai 600036 (India)]. E-mail: manu@iitm.ac.in; Barik, Ullash Kumar [Semiconductor Physics Laboratory, Department of Physics, Indian Institute of Technology Madras, Chennai 600036 (India)

    2007-03-15

    Indium ({approx}10 at.%)-doped silver oxide (AIO) thin films have been prepared on glass substrates at room temperature (300 K) by reactive DC magnetron sputtering technique using an alloy target made of pure (99.99%) silver and indium (90:10 at.%) metals. The oxygen flow rates have been varied in the range 0.00-3.44 sccm during sputtering. The X-ray diffraction data on these indium-doped silver oxide films show polycrystalline nature. With increasing oxygen flow rate, the carrier concentration, the Hall mobility and the electron mean free path decrease. These films show a very low positive temperature coefficient of resistivity {approx}3.40x10{sup -8} ohm-cm/K. The work function values for these films (measured by Kelvin probe technique) are in the range 4.81-5.07 eV. The high electrical resistivity indicate that the films are in the island state (size effects). Calculations of the partial ionic charge (by Sanderson's theory) show that indium doping in silver oxide thin films enhance the ionicity.

  10. Characterization and Stability of Na-doped p-type ZnO Thin Films Preparation by Reactive DC Magnetron Sputtering

    Institute of Scientific and Technical Information of China (English)

    JI Zhen-guo; LIU Fang; HE Hai-yan; HAN Wei-zhi

    2009-01-01

    Na-doped p-type ZnO thin films have been realized by DC reactive magnetron sputtering with a set of metal-Zn targets doped with various Na contents and under different substrate temperatures,respectively.Hall effect measurement,field-emission SEM,X-ray diffraction and optical transmission were carried out to investigate the effects of Na content and substrate temperature on the properties of p-type films. Results indicate that all the Na-doped ZnO films are strongly (002) oriented,and have an average transmittance ~85% in the visible region.Na-doped p-type ZnO films with good structural,electrical,and optical properties can only be obtained at an intermediate amount of Na content and under appropriate substrate temperature.At the optimal condition,the Na-doped p-type ZnO has the lowest resistivity of 13.8Ω· cm with the carrier concentration as high as 1.07×10~(18) cm~(-3).The stability of the Na-doped p-type ZnO is also studied in this paper and it is found that the electrical properties keep stable in a period of one month.

  11. Electrochromic properties of NiOx:H films deposited by DC magnetron sputtering for ITO/NiOx:H/ZrO2/WO3/ITO device

    Science.gov (United States)

    Dong, Dongmei; Wang, Wenwen; Dong, Guobo; Zhou, Yuliang; Wu, Zhonghou; Wang, Mei; Liu, Famin; Diao, Xungang

    2015-12-01

    NiOx:H thin films were deposited on ITO-coated glass by DC reactive magnetron sputtering at room temperature. The effects of the hydrogen content on the structure, morphologies, electrochemical properties, the stoichiometry and chemical states of NiOx:H thin films were systematically studied. In X-ray diffraction and atomic force microscopy analysis, the crystallinity of the films tends to be weakened when the flow amount ratio of Ar:O2:H2 equals 19:1:3 and as confirmed in electrochemical analysis, such relatively weak crystallinity is the main contributing factor to ion transportation. X-ray photoelectron spectroscopy reveals that the increase of the hydrogen contents results in a relatively lower binding energy exhibited in the Ni 2p spectra. The proportion of Ni2O3 in NiOx:H films increases from 22% at bleached state to 33% at colored state. A monolithic all-thin-film inorganic electrochromic device was fabricated with complementary configuration as ITO/NiOx:H/ZrO2/WO3/ITO. The electrochromic device with optimized NiOx:H thin films acting both as ion storage layer and proton-providing source displays high modulation efficiency of 68% at a fixed wavelength 550 nm.

  12. Analysis of the properties of functional titanium dioxide thin films deposited by pulsed DC magnetron sputtering with various O2:Ar ratios

    Science.gov (United States)

    Mazur, Michal

    2017-07-01

    For the purpose of thin film preparation, pulsed DC magnetron sputtering process was performed and various O2:Ar gas ratios were applied during deposition. Structural properties of thin films deposited with various sputtering atmospheres were determined based on the results of the x-ray diffraction method and Raman spectroscopy, which revealed that all coatings were nanocrystalline and had anatase or rutile structure. The surface morphology of the coatings were investigated with the aid of a scanning electron microscopy and atomic force microscopy. Surface properties were evaluated by x-ray photoelectron spectroscopy and wettability measurements. It was revealed that an increase of Ar amount in the sputtering gas atmosphere caused as a result an increase of thin film water contact angle and enhanced ability of the surface to adsorb water molecules and hydroxyl radicals. Optical properties evaluated on the basis of transmission and reflection measurements showed that all coatings were transparent in the visible wavelength range, but had different refractive index, porosity and packing density. The mechanical properties of the obtained coatings were determined on the basis of nanoindentation tests. Prepared TiO2 thin films had different surface, optical and mechanical properties depending on the gas atmosphere during deposition.

  13. Effect of film thickness on structural and mechanical properties of AlCrN nanocompoite thin films deposited by reactive DC magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Prakash, Ravi; Kaur, Davinder, E-mail: dkaurfph@iitr.ac.in [Functional Nanomaterial Research lab, Department of Physics and Centre for Nanotechnology, Indian Institute of Technology Roorkee, Roorkee-247667, Uttarakhand (India)

    2016-05-06

    In this study, the influence of film thickness on the structural, surface morphology and mechanical properties of Aluminum chromium nitride (AlCrN) thin films has been successfully investigated. The AlCrN thin films were deposited on silicon (100) substrate using dc magnetron reactive co-sputtering at substrate temperature 400° C. The structural, surface morphology and mechanical properties were studied using X-ray diffraction, field-emission scanning electron microscopy and nanoindentation techniques respectively. The thickness of these thin films was controlled by varying the deposition time therefore increase in deposition time led to increase in film thickness. X-ray diffraction pattern of AlCrN thin films with different deposition time shows the presence of (100) and (200) orientations. The crystallite size varies in the range from 12.5 nm to 36.3 nm with the film thickness due to surface energy minimization with the higher film thickness. The hardness pattern of these AlCrN thin films follows Hall-Petch relation. The highest hardness 23.08 Gpa and young modulus 215.31 Gpa were achieved at lowest grain size of 12.5 nm.

  14. Study of sterilization-treatment in pure and N- doped carbon thin films synthesized by inductively coupled plasma assisted pulsed-DC magnetron sputtering

    Science.gov (United States)

    Javid, Amjed; Kumar, Manish; Han, Jeon Geon

    2017-01-01

    Electrically-conductive nanocrystalline carbon films, having non-toxic and non-immunogenic characteristics, are promising candidates for reusable medical devices. Here, the pure and N- doped nanocrystalline carbon films are deposited by the assistance of inductively coupled plasma (ICP) in an unbalanced facing target pulsed-DC magnetron sputtering process. Through the optical emission spectroscopy study, the role of ICP assistance and N-doping on the reactive components/radicals during the synthesis is presented. The N-doping enhances the three fold bonding configurations by increasing the ionization and energies of the plasma species. Whereas, the ICP addition increases the plasma density to control the deposition rate and film structure. As a result, sputtering-throughput (deposition rate: 31-55 nm/min), electrical resistivity (4-72 Ωcm) and water contact angle (45.12°-54°) are significantly tailored. Electric transport study across the surface microchannel confirms the superiority of N-doped carbon films for sterilization stability over the undoped carbon films.

  15. Structural and optical properties of a-Si{sub 1-x}C{sub x}:H films synthesized by dc magnetron sputtering technique

    Energy Technology Data Exchange (ETDEWEB)

    Keffous, Aissa, E-mail: keffousa@yahoo.fr [Silicon Technology Development Unit (UDTS), 02 Bd, Frantz FANON, B.P. 140, Algiers (Algeria); Cheriet, Abdelhak; Belkacem, Youcef; Gabouze, Noureddine; Boukezzata, Assia; Boukennous, Yacine [Silicon Technology Development Unit (UDTS), 02 Bd, Frantz FANON, B.P. 140, Algiers (Algeria); Brighet, Amer; Cherfi, Rabah; Kechouane, Mohamed [Houari Boumediene Science and Technology University (USTHB), Physics Faculty, Algiers (Algeria); Guerbous, Lakhdar [Algerian Nuclear Research Center (CRNA), Algiers (Algeria); Menous, Isa; Menari, Hamid [Silicon Technology Development Unit (UDTS), 02 Bd, Frantz FANON, B.P. 140, Algiers (Algeria)

    2010-05-01

    Hydrogenated amorphous SiC films (a-Si{sub 1-x}C{sub x}:H) were prepared by dc magnetron sputtering technique on p-type Si(1 0 0) and corning 9075 substrates at low temperature, by using 32 sprigs of silicon carbide (6H-SiC). The deposited a-Si{sub 1-x}C{sub x}:H film was realized under a mixture of argon and hydrogen gases. The a-Si{sub 1-x}C{sub x}:H films have been investigated by scanning electronic microscopy equipped with an EDS system (SEM-EDS), X-ray diffraction (XRD), secondary ions mass spectrometry (SIMS), Fourier transform infrared spectroscopy (FTIR), UV-vis-IR spectrophotometry, and photoluminescence (PL). XRD results showed that the deposited film was amorphous with a structure as a-Si{sub 0.80}C{sub 0.20}:H corresponding to 20 at.% carbon. The photoluminescence response of the samples was observed in the visible range at room temperature with two peaks centred at 463 nm (2.68 eV) and 542 nm (2.29 eV). In addition, the dependence of photoluminescence behaviour on film thickness for a certain carbon composition in hydrogenated amorphous SiC films (a-Si{sub 1-x}C{sub x}:H) has been investigated.

  16. Effect of substrate temperature on the arrangement of ultra-thin TiO{sub 2} films grown by a dc-magnetron sputtering deposition

    Energy Technology Data Exchange (ETDEWEB)

    Bukauskas, Virginijus, E-mail: virgis@pfi.lt [Center for Physical Sciences and Technology, A. Goštauto 11, LT-01108 Vilnius (Lithuania); Kaciulis, Saulius; Mezzi, Alessio [Istituto per lo Studio dei Materiali Nanostrutturati, ISMN-CNR, P.O. Box 10, I-00015 Monterotondo Stazione, Roma (Italy); Mironas, Audružis; Niaura, Gediminas; Rudzikas, Matas; Šimkienė, Irena; Šetkus, Arūnas [Center for Physical Sciences and Technology, A. Goštauto 11, LT-01108 Vilnius (Lithuania)

    2015-06-30

    TiO{sub 2} films with a thickness between 3 and 10 nm are obtained by a dc-magnetron sputtering deposition in the reactive gas atmosphere and the properties of the films are investigated by the Raman spectroscopy, X-ray photoelectron spectroscopy and scanning probe microscopy. An influence of the deposition temperature and the post-growth annealing on the properties of the films is studied at the temperatures from 375 to 650 K. It is experimentally demonstrated that the crystalline structure can be identified by the Raman spectroscopy in the films with the thickness higher than 9 nm and annealed in the oxygen rich atmosphere for at least 2 h at about 630 K. It is proved that the changes in the film structure are not related to the changes in the chemical composition, the Ti state, and the stoichiometry of the films. Basing on the fractal analysis of topographical images, it is shown that the structural changes can be associated with the changes in the fractal dimension. These changes can be a quantitative characteristic of the structure for the films thinner than 10 nm. - Highlights: • TiO{sub 2} films (< 10 nm) with crystalline anatase and amorphous grains were investigated. • Amounts of the crystalline and amorphous grains depend on the substrate temperature. • Fractal dimension is used as an indicator of a crystalline–amorphous grain mixture.

  17. Influence of oxygen flow rate on the structural, optical and electrical properties of ZnO films grown by DC magnetron sputtering

    Science.gov (United States)

    Gobbiner, Chaya Ravi; Ali Avanee Veedu, Muhammed; Kekuda, Dhananjaya

    2016-04-01

    Zinc oxide thin films were deposited on glass substrates at different oxygen flow rates by DC reactive magnetron sputtering. The oxygen flow rate was found to be one of the crucial parameters which influence structural, optical and electrical properties of grown films. The structural and optical characterization of the deposited films was carried out using X-ray diffraction and UV-visible spectroscopy, respectively. Swanepoel envelope and Drude-Lorentz (DL) models were applied to extract the optoelectronic parameters such as refractive index, dispersion energy and plasma frequency. Structurally, grain size was found to decrease with increase in oxygen flow rate during deposition. Moreover, all the films exhibited preferred (002) orientation confirming c-axis orientation of the films perpendicular to the substrate. For a particular range of oxygen flow rates, columnar growth was achieved. Marginal increase in the optical band gap from 3.14 to 3.22 eV was observed as the oxygen flow rate increased from 3 to 10 sccm. Calculated plasma frequency from the DL model was found to be in the infrared region. It has decreased as oxygen flow rate increased with the value from 1.625 × 1014 rad/s (862 cm-1) to 1.072 × 1014 rad/s (568 cm-1).

  18. Effect of N Concentration on Microstructure Evolution of the Nanostructured (Al, Ti, SiN Coatings Prepared by d.c. Reactive Magnetron Sputtering

    Directory of Open Access Journals (Sweden)

    L. Jakab-Farkas

    2009-12-01

    Full Text Available Nanostructured (Al, Ti, SiN thin film coatings were synthesized by d.c. reactive magnetron sputtering, performed in an Ar/N2 gas mixture from a planar rectangular Al:Ti:Si=50:25:25 alloyed target. The mass flow of N2 reactive gas was strictly controlled in sputtering process. Conventional transmission electron microscopy (TEM technique was used for microstructure investigation of the as deposited films. Cross-sectional cuts performed through the deposited films revealed distinct microstructure evolution for different samples. It was found that the variation of the reactive gas amount induced changes in film microstructure. The metallic AlTiSi film exhibited strong columnar growth with a crystalline structure. The addition of a small amount of nitrogen to the process gas leads to a crystallite refinement. Further increase of N concentration resulted in evolution of fine lamellae growth morphology consisting of hainlike pearls in a dendrite, clusters of very fine grains in close crystallographic orientation.

  19. Results on the electrochromic and photocatalytic properties of vanadium doped tungsten oxide thin films prepared by reactive dc magnetron sputtering technique

    Science.gov (United States)

    Muthu Karuppasamy, K.; Subrahmanyam, A.

    2008-02-01

    In this investigation, vanadium doped tungsten oxide (V : WO3) thin films are prepared at room temperature by reactive dc magnetron sputtering employing a tungsten-vanadium 'inlay' target. In comparison with pure sputtered tungsten oxide thin films, 11% vanadium doping is observed to decrease the optical band gap, enhance the colour neutral property, decrease the coloration efficiency (from 121 to 13 cm2 C-1), increase the surface work function (4.68-4.83 eV) and significantly enhance the photocatalytic efficiency in WO3 thin films. These observations suggest that (i) vanadium creates defect levels that are responsible for optical band gap reduction, (ii) multivalent vanadium bonding with terminal oxygen in the WO3 lattice gives rise to localized covalent bonds and thus results in an increase in the work function, and (iii) a suitable work function of V : WO3 with ITO results in an enhancement of the photocatalytic activity. These results on electrochromic and photocatalytic properties of V : WO3 thin films show good promise in the low maintenance window application.

  20. Results on the electrochromic and photocatalytic properties of vanadium doped tungsten oxide thin films prepared by reactive dc magnetron sputtering technique

    Energy Technology Data Exchange (ETDEWEB)

    Karuppasamy, K Muthu; Subrahmanyam, A [Semiconductor Laboratory, Department of Physics, Indian Institute of Technology Madras, Chennai 600036 (India)

    2008-02-07

    In this investigation, vanadium doped tungsten oxide (V : WO{sub 3}) thin films are prepared at room temperature by reactive dc magnetron sputtering employing a tungsten-vanadium 'inlay' target. In comparison with pure sputtered tungsten oxide thin films, 11% vanadium doping is observed to decrease the optical band gap, enhance the colour neutral property, decrease the coloration efficiency (from 121 to 13 cm{sup 2} C{sup -1}), increase the surface work function (4.68-4.83 eV) and significantly enhance the photocatalytic efficiency in WO{sub 3} thin films. These observations suggest that (i) vanadium creates defect levels that are responsible for optical band gap reduction, (ii) multivalent vanadium bonding with terminal oxygen in the WO{sub 3} lattice gives rise to localized covalent bonds and thus results in an increase in the work function, and (iii) a suitable work function of V : WO{sub 3} with ITO results in an enhancement of the photocatalytic activity. These results on electrochromic and photocatalytic properties of V : WO{sub 3} thin films show good promise in the low maintenance window application.

  1. A fast novel soft-start circuit for peak current-mode DC-DC buck converters

    Institute of Scientific and Technical Information of China (English)

    Li Jie; Yang Miao; Sun Weifeng; Lu Xiaoxia; Xu Shen; Lu Shengli

    2013-01-01

    A fully integrated soft-start circuit for DC-DC buck converters is presented.The proposed high speed soft-start circuit is made of two sections:an overshoot suppression circuit and an inrush current suppression circuit.The overshoot suppression circuit is presented to control the input of the error amplifier to make output voltage limit increase in steps without using an external capacitor.A variable clock signal is adopted in the inrush current suppression circuit to increase the duty cycle of the system and suppress the inrush current.The DC-DC converter with the proposed soft-start circuit has been fabricated with a standard 0.13 μm CMOS process.Experimental results show that the proposed high speed soft-start circuit has achieved less than 50 μs start-up time.The inductor current and the output voltage increase smoothly over the whole load range.

  2. DC feedback for wide band frequency fixed current source

    Directory of Open Access Journals (Sweden)

    Aoday Hashim Mohamad Al-Rawi

    2013-03-01

    Full Text Available Alternating current sources are mainly used in bioelectrical impedance devices. Nowadays 50 – 100 kHz bioelectrical impedance devices are commonly used for body composition analysis. High frequency bioelectrical impedance analysis devices are mostly used in bioimpedance tomography and blood analysis. High speed op-amps and voltage comparators are used in this circuit. Direct current feedback is used to prevent delay. An N-Channel J-FET transistor was used to establish the voltage controlled gain amplifier (VCG. A sine wave signal has been applied as input voltage. The value of this signal should be constant in 170 mV rms to keep the output current in about 1 mA rms. Four frequencies; 100 kHz, 1 MHz, 2 MHz and 3.2 MHz were applied to the circuit and the current was measured for different load resistances. The results showed that the current was stable for changes in the resistor load, bouncing around an average point as a result of bouncing DC feedback.

  3. Analytical Method to Calculate the DC Link Current Stress in Voltage Source Converters

    DEFF Research Database (Denmark)

    Gohil, Ghanshyamsinh Vijaysinh; Bede, Lorand; Teodorescu, Remus;

    2014-01-01

    The dc-link capacitor is one of the critical components, which influences the lifetime of the whole voltage source converter unit. For reliable design, the operating temperature of the dc-link capacitor should be known, which is primarily determined by the ambient temperature and the rms value...... of the current flowing through the dc-link capacitor. A simple analytical method to calculate the rms value of the dc-link capacitor current is presented in this paper. The effect of the line current ripple on the rms value of the dc-link capacitor current is considered. This yields accurate results, especially...

  4. A Novel Dual-input Isolated Current-Fed DC-DC Converter for Renewable Energy System

    DEFF Research Database (Denmark)

    Zhang, Zhe; Thomsen, Ole Cornelius; Andersen, Michael A. E.

    2010-01-01

    In this paper, a novel isolated current-fed DC-DC converter (boost-type) with two input power sources based on multi-transformer structure, which is suitable for fuel cells and super-capacitors hybrid energy system, is proposed and designed. With particular transformer windings connection strategy......, the proposed converter can draw power from two different DC sources with lower voltage and deliver it to the higher voltage DC bus or load individually and simultaneously. The detailed operation principle of the proposed converter has been analyzed in dual-input mode and single-input mode, respectively....... Furthermore, the method to increase the number of input ports, the magnetic integration structure, and ground loop decoupling are discussed. Experimental results from the lab prototype converter with two DC voltage sources verify the validity of the theoretical analysis and design of the converter....

  5. A ZVS PWM control strategy with balanced capacitor current for half-bridge three-level DC/DC converter

    DEFF Research Database (Denmark)

    Liu, Dong; Deng, Fujin; Chen, Zhe

    2017-01-01

    The capacitor current would be imbalanced under the conventional control strategy in the half-bridge three-level (HBTL) DC/DC converter due to the effect of the output inductance of the power supply and the input line inductance, which would affect the converter's reliability. This paper proposes...... a pulse-wide modulation (PWM) strategy composed of two operation modes for the HBTL DC/DC converter, which can realize the zero-voltage switching (ZVS) for the efficiency improvement. In addition, a capacitor current balancing control is proposed by alternating the two operation modes of the proposed ZVS...... PWM strategy, which can eliminate the current imbalance among the two input capacitors. Therefore, the proposed control strategy can improve the converter's performance and reliability in: 1) reducing the switching losses and noises of the power switches; 2) balancing the thermal stresses...

  6. Performance and scalability of isolated DC-DC converter topologies in low voltage, high current applications

    Energy Technology Data Exchange (ETDEWEB)

    Vaisanen, V.

    2012-07-01

    Fuel cells are a promising alternative for clean and efficient energy production. A fuel cell is probably the most demanding of all distributed generation power sources. It resembles a solar cell in many ways, but sets strict limits to current ripple, common mode voltages and load variations. The typically low output voltage from the fuel cell stack needs to be boosted to a higher voltage level for grid interfacing. Due to the high electrical efficiency of the fuel cell, there is a need for high efficiency power converters, and in the case of low voltage, high current and galvanic isolation, the implementation of such converters is not a trivial task. This thesis presents galvanically isolated DC-DC converter topologies that have favorable characteristics for fuel cell usage and reviews the topologies from the viewpoint of electrical efficiency and cost efficiency. The focus is on evaluating the design issues when considering a single converter module having large current stresses. The dominating loss mechanism in low voltage, high current applications is conduction losses. In the case of MOSFETs, the conduction losses can be efficiently reduced by paralleling, but in the case of diodes, the effectiveness of paralleling depends strongly on the semiconductor material, diode parameters and output configuration. The transformer winding losses can be a major source of losses if the windings are not optimized according to the topology and the operating conditions. Transformer prototyping can be expensive and time consuming, and thus it is preferable to utilize various calculation methods during the design process in order to evaluate the performance of the transformer. This thesis reviews calculation methods for solid wire, litz wire and copper foil winding losses, and in order to evaluate the applicability of the methods, the calculations are compared against measurements and FEM simulations. By selecting a proper calculation method for each winding type, the winding

  7. Symmetrical dynamics of peak current-mode and valley current-mode controlled switching dc-dc converters with ramp compensation

    Science.gov (United States)

    Zhou, Guo-Hua; Xu, Jian-Ping; Bao, Bo-Cheng; Jin, Yan-Yan

    2010-06-01

    The discrete iterative map models of peak current-mode (PCM) and valley current-mode (VCM) controlled buck converters, boost converters, and buck-boost converters with ramp compensation are established and their dynamical behaviours are investigated by using the operation region, parameter space map, bifurcation diagram, and Lyapunov exponent spectrum. The research results indicate that ramp compensation extends the stable operation range of the PCM controlled switching dc-dc converter to D > 0.5 and that of the VCM controlled switching dc-dc converter to D converters with ramp compensation, VCM controlled switching dc-dc converters with ramp compensation exhibit interesting symmetrical dynamics. Experimental results are given to verify the analysis results in this paper.

  8. Structure and optical properties of Cd-substituted ZnO (Zn{sub 1-x}Cd{sub x}O) thin films synthesized by the dc reactive magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Jinghai; Yue, Yonggao; Sui, Yingrui; Cao, Yan; Wei, Maobin; Liu, Xiaoyan; Yang, Lili; Lang, Jihui; Li, Xuefei; Li, Xiuyan [Jilin Normal University, Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education, Institute of Condensed State Physics, Siping (China)

    2014-11-15

    The ternary Zn{sub 1-x}Cd{sub x}O (x = 0, 0.2) thin films with wurtzite structure and highly (002)-preferred orientations were deposited on glass substrates by the direct current (dc) reactive magnetron sputtering method. The X-ray diffraction, X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), optical absorption spectra and photoluminescence (PL) were employed to investigate the structural and the optical properties in detail. The results indicated that as x varied from x = 0-0.2, the diffraction angle of the (002) peaks decreased from ∝34.36 to ∝33.38 and the lattice spacing increased from 0.260 to 0.268 nm. Moreover, the optical band-gap of the Zn{sub 1-x}Cd{sub x}O thin films with the wurtzite structure decreased from 3.20 eV at x = 0-2.70 eV at x = 0.2. Correspondingly, the near-band-edge PL was tuned in a wide visible region from ∝393 to 467 nm. The chemical bonding states of Cd in Zn{sub 1-x}Cd{sub x}O alloy thin films were examined by XPS analysis. (orig.)

  9. Synthesis and characterization of zirconium oxynitride ZrO{sub x}N{sub y} coatings deposited via unbalanced DC magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Cubillos, G.I., E-mail: gcubillos@unal.edu.co [Chemistry Department, College of Science, National University of Colombia, Bogotá (Colombia); Olaya, J.J., E-mail: jjolayaf@unal.edu.co [Department of Mechanical Engineering and Mechatronics, College of Engineering, National University of Colombia, Bogotá (Colombia); Bethencourt, M., E-mail: manuel.bethencourt@uca.es [Department of Materials Science, Metallurgical Engineering and Inorganic Chemistry, University of Cadiz, Marine Science and Technology Center of Andalucía, International Campus of Excellence of the Sea (CEI MAR), Avda. República de Saharaui, Puerto Real E-11510 (Spain); Antorrena, G., E-mail: ganto@unizar.es [Laboratorio de Microscopías Avanzadas (LMA) – Instituto de Nanociencia de Aragón (University of Zaragoza, Spain), 50009 Zaragoza (Spain); El Amrani, K., E-mail: khadija.elhanrani@uca.es [Department of Materials Science, Metallurgical Engineering and Inorganic Chemistry, Faculty of Marine Sciences, University of Cadiz, Avda. República de Saharaui, Puerto Real E-11510 (Spain)

    2013-08-15

    A study of structure, morphology, and corrosion resistance was performed on zirconium oxynitride thin films deposited on 304 and 316 stainless steels by the DC sputtering magnetron unbalance technique. Structural analysis was carried out using X-ray diffraction (XRD), while morphological analysis was performed by scanning electron microscopy (SEM), atomic force microscopy (AFM), and transmission electron microscopy (TEM). These studies were performed as a function of deposition time via DC sputtering at room temperature (287 K) with an Ar/air flow ratio of 3.0 and a total deposition time of 30 min. The oxynitride films were grown with cubic crystalline structures Zr{sub 2}ON{sub 2} and preferentially oriented along the (222) plane. Chemical analysis determined that in the last 5.0 nm, the Zr coatings present the following spectral lines: Zr3d{sub 3/2} (184.6 eV) and 3d{sub 5/2} (181.7 eV), O1s (531.3 eV), and N1s (398.5 eV). The zirconium oxynitride films enhance the stainless steel's resistance to corrosion. The protective efficacy has been evaluated using electrochemical techniques based on linear polarizations (LP). The results indicate that the layer provides good resistance to corrosion in chloride-containing media. SEM analysis presented the homogeneity of the films. AFM studies indicated that the average roughness of the film is 20.2 nm in the two steels and a particle size ranging between 150 and 208 nm in ZrO{sub x}N{sub y}-AISI 316 and 115–180 in ZrO{sub x}N{sub y}-AISI 316. TEM analysis indicated columnar growth. - Highlights: • ZrO{sub 0.8}N{sub 0.2} coatings were deposited by DC sputtering using air as the reactive gas. • The ZrO{sub 0.8}N{sub 0.2} films grew in the cubic phase and preferentially oriented in plane (222). • A thin film of ZrO{sub 2} (c) promotes the growth of ZrO{sub 0.8}N{sub 0.2}. • The coating of ZrO{sub 2}/ZrO{sub 0.8}N{sub 0.2} increases the corrosion resistance of steel.

  10. Electronic Current Transducer (ECT) for high voltage dc lines

    Science.gov (United States)

    Houston, J. M.; Peters, P. H., Jr.; Summerayes, H. R., Jr.; Carlson, G. J.; Itani, A. M.

    1980-02-01

    The development of a bipolar electronic current transducer (ECT) for measuring the current in a high voltage dc (HVDC) power line at line potential is discussed. The design and construction of a free standing ECT for use on a 400 kV line having a nominal line current of 2000 A is described. Line current is measured by a 0.0001 ohm shunt whose voltage output is sampled by a 14 bit digital data link. The high voltage interface between line and ground is traversed by optical fibers which carry digital light signals as far as 300 m to a control room where the digital signal is converted back to an analog representation of the shunt voltage. Two redundant electronic and optical data links are used in the prototype. Power to operate digital and optical electronics and temperature controlling heaters at the line is supplied by a resistively and capacitively graded 10 stage cascade of ferrite core transformers located inside the hollow, SF6 filled, porcelain support insulator. The cascade is driven by a silicon controlled rectifier inverter which supplies about 100 W of power at 30 kHz.

  11. Performance evaluation of reactive direct current unbalanced magnetron sputter deposited nanostructured TiN coated high-speed steel drill bits

    Indian Academy of Sciences (India)

    Harish C Barshilia; K S Rajam

    2007-12-01

    The stainless steels, in general, are considered to be difficult-to-machine materials. In order to machine these materials the surface of the tool is generally coated with physical vapour deposition (PVD) hard coatings such as titanium nitride (TiN), titanium aluminum nitride (TiAlN), etc. The adhesion is of vital importance for the performance of tools coated with PVD coatings. Proper surface treatments (in situ and ex situ) are required to achieve highly adherent PVD coatings on tools. We have deposited nanostructured TiN coatings on high-speed steel (HSS) drill bits and mild steel substrates using an indigenously built semi-industrial fourcathode reactive direct current (d.c.) unbalanced magnetron sputtering system. Various treatments have been given to the substrates for improved adhesion of the TiN coatings. The process parameters have been optimized to achieve highly adherent thick good quality TiN coatings. These coatings have been characterized using X-ray diffraction, nanoindentation and atomic force microscopy techniques. The performance of the coated HSS drill bits is evaluated by drilling a 13 mm thick 304 stainless steel plate under wet conditions. The results show significant improvement in the performance of the TiN coated HSS drill bits.

  12. Electrochromic properties and performance of NiOx films and their corresponding all-thin-film flexible devices preparedby reactive DC magnetron sputtering

    Science.gov (United States)

    Dong, Dongmei; Wang, Wenwen; Dong, Guobo; Zhang, Fan; He, Yingchun; Yu, Hang; Liu, Famin; Wang, Mei; Diao, Xungang

    2016-10-01

    Nickel oxide (NiOx) thin films were deposited by direct current magnetron sputtering technique onto flexible substrates with various oxygen (O2) partial pressures. The influence of O2 contents during deposition process on film structure, morphology, composition, optical and electrochromic (EC) characteristics of the films were investigated. The EC response for nonstoichiometric NiOx films shows a strong dependence on grain size variations and surface morphology. Finally, the multiple-layer stacks ITO/NiOx/Ta2O5:H/WO3/ITO were sequentially vacuum deposited over flexible polyethylene terephthalate plates based on the optimization of NiOx single layers. A large optical contrast up to 60% and a good durability are obtained for full device. To perform preliminary research on the mechanical properties within flexible devices, we introduced nontrivial changes to the interfacial properties by replacing the glass with flexible polymers. The effects were studied through static bending and the nano-scratch test.

  13. XPS and AFM Investigations of Ti-Al-N Coatings Fabricated Using DC Magnetron Sputtering at Various Nitrogen Flow Rates and Deposition Temperatures

    Directory of Open Access Journals (Sweden)

    Aleksei Obrosov

    2017-02-01

    Full Text Available Ti-Al-N coatings were deposited by direct current magnetron sputtering (DCMS onto IN 718 at different nitrogen flow rates and deposition temperatures. The coatings’ properties were characterized using atomic force microscopy (AFM, X-ray photoelectron spectroscopy (XPS as well as nanoindentation. It was found that higher deposition temperature leads to higher surface roughness and nitrogen flux influences the shape of grains. According to XPS, the bonding structure of all coatings exhibited the (Ti,AlN phase. Mechanical properties depend on the Al content within the films. The coating with the best mechanical properties (deposited at 500 °C and 20 standard cubic centimeters per minute (sccm was further deposited onto tungsten carbide (WC cutting tools for cylindrical turning experiments. A quasi-constant flank wear was observed until a machining volume of 23,500 mm3.

  14. Mechanical, tribological and corrosion properties of CrBN films deposited by combined direct current and radio frequency magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Jahodova, Vera [Singapore Institute of Manufacturing Technology, 71 Nanyang Drive, 638075 (Singapore); Koszalin University of Technology, Sniadeckich 2, 75-0453 Koszalin (Poland); Technical University of Liberec, Studentska 1402/2, 461 17 Liberec1 (Czech Republic); Ding, Xing-zhao, E-mail: xzding@SIMTech.a-star.edu.sg [Singapore Institute of Manufacturing Technology, 71 Nanyang Drive, 638075 (Singapore); Seng, Debbie H.L. [Institute of Materials Research and Engineering, 3 Research Link, 117602 (Singapore); Gulbinski, W. [Koszalin University of Technology, Sniadeckich 2, 75-0453 Koszalin (Poland); Louda, P. [Technical University of Liberec, Studentska 1402/2, 461 17 Liberec1 (Czech Republic)

    2013-10-01

    Cr–B–N films were deposited on stainless steel substrates by a combined direct current and radio frequency (RF) reactive unbalanced magnetron sputtering process using two elemental Cr and one compound BN targets. Boron content in the as-deposited films was qualitatively analyzed by time-of-flight secondary ion mass spectroscopy. Films' microstructure, mechanical and tribological properties were characterized by X-ray diffraction, nanoindentation and pin-on-disk tribometer experiments. Corrosion behavior of the Cr–B–N films was evaluated by electrochemical potentiodynamic polarization method in a 3 wt.% NaCl solution. All the films were crystallized into a NaCl-type cubic structure. At lower RF power applied on the BN target (≤ 600 W), films are relatively randomly oriented, and films' crystallinity increased with increasing RF power. With increasing RF power further (≥ 800 W), films became (200) preferentially oriented, and films' crystallinity decreased gradually. With incorporation of a small amount of boron atoms into the CrN films, hardness, wear- and corrosion-resistance were all improved evidently. The best wear and corrosion resistance was obtained for the film deposited with 600 W RF power applied on the BN target. - Highlights: • CrBN films deposited by direct current and radio frequency magnetron sputtering. • CrBN exhibited higher hardness, wear- and corrosion-resistance than pure CrN. • The best wear- and corrosion-resistant film was deposited with 600 W RF power.

  15. Low-temperature growth of low friction wear-resistant amorphous carbon nitride thin films by mid-frequency, high power impulse, and direct current magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Bakoglidis, Konstantinos D., E-mail: konba@ifm.liu.se; Schmidt, Susann; Garbrecht, Magnus; Ivanov, Ivan G.; Jensen, Jens; Greczynski, Grzegorz; Hultman, Lars [Department of Physics, Chemistry and Biology (IFM), Linköping University, SE-581 83 Linköping (Sweden)

    2015-09-15

    The potential of different magnetron sputtering techniques for the synthesis of low friction and wear resistant amorphous carbon nitride (a-CN{sub x}) thin films onto temperature-sensitive AISI52100 bearing steel, but also Si(001) substrates was studied. Hence, a substrate temperature of 150 °C was chosen for the film synthesis. The a-CN{sub x} films were deposited using mid-frequency magnetron sputtering (MFMS) with an MF bias voltage, high power impulse magnetron sputtering (HiPIMS) with a synchronized HiPIMS bias voltage, and direct current magnetron sputtering (DCMS) with a DC bias voltage. The films were deposited using a N{sub 2}/Ar flow ratio of 0.16 at the total pressure of 400 mPa. The negative bias voltage, V{sub s}, was varied from 20 to 120 V in each of the three deposition modes. The microstructure of the films was characterized by high-resolution transmission electron microscopy and selected area electron diffraction, while the film morphology was investigated by scanning electron microscopy. All films possessed an amorphous microstructure, while the film morphology changed with the bias voltage. Layers grown applying the lowest substrate bias of 20 V exhibited pronounced intercolumnar porosity, independent of the sputter technique. Voids closed and dense films are formed at V{sub s} ≥ 60 V, V{sub s} ≥ 100 V, and V{sub s} = 120 V for MFMS, DCMS, and HiPIMS, respectively. X-ray photoelectron spectroscopy revealed that the nitrogen-to-carbon ratio, N/C, of the films ranged between 0.2 and 0.24. Elastic recoil detection analysis showed that Ar content varied between 0 and 0.8 at. % and increased as a function of V{sub s} for all deposition techniques. All films exhibited compressive residual stress, σ, which depends on the growth method; HiPIMS produces the least stressed films with values ranging between −0.4 and −1.2 GPa for all V{sub s}, while CN{sub x} films deposited by MFMS showed residual stresses up to −4.2

  16. Analysis on the ionization of high power pulsed unbalanced magnetron sputtering powered by direct current%直流电源耦合高功率脉冲非平衡磁控溅射电离特性

    Institute of Scientific and Technical Information of China (English)

    牟宗信; 牟晓东; 王春; 贾莉; 董闯

    2011-01-01

    采用直流电源放电形成高功率脉冲非平衡磁控溅射(dc-high power impulse unbalanced magnetron sputtering,dc-HPPUMS或dc-HiPiUMS),利用雪崩放电的击穿机理形成深度自触发放电,同轴线圈和空心阴极控制放电特性和提高功率密度.磁阱俘获雪崩放电形成的二次电子和形成漂移电流,形成了大电流脉冲放电,放电脉冲电流密度峰值超过100 A/cm2,脉冲频率小于40 Hz.由于放电等离子体远没有达到平衡状态,放电电流主要受到空间电荷效应的限制,采用放电理论分析了形成高电离率和强脉冲电流的机理,采用蔡尔德定律计算的放电参数符合实验的结果.%High Power impulse Unbalanced Magnetron Sputtering has been coupled to a direct current source (dc-HPPUMS or dc-HiPUMS). A coaxial coil and an attached hollow cathode were applied to control discharge properties and improve pulsed power density. A large extent breakdown was induced for avalanche discharge mechanism. The magnetic trap on sputtering target traps the secondary electrons excited by the avalanche and forms a drift current in magnetic trap. The peak pulse current density is higher than 100 A/cm2 with a pulse frequency less than 40 Hz. The space charge limited condition controls the discharge for plasma far away from equilibrium. The discharge theory was taken to describe the high ionization mechanism in dc-HPPUMS discharge. The parameters deduced from Child law agree with the experimental results.

  17. Fluorine-doped tin oxide films grown by pulsed direct current magnetron sputtering with an Sn target.

    Science.gov (United States)

    Liao, Bo-Huei; Kuo, Chien-Cheng; Chen, Pin-Jen; Lee, Cheng-Chung

    2011-03-20

    Fluorine-doped tin oxide (FTO) films have been deposited by pulsed DC magnetron sputtering with an Sn target. Various ratios of CF4/O2 gas were injected to enhance the optical and electrical properties of the films. The extinction coefficient was lower than 1.5×10(-3) in the range from 400 to 800 nm when the CF4O2 ratio was 0.375. The resistivity of fluorine-doped SnO2 films (1.63×10(-3) Ω cm) deposited at 300 °C was 27.9 times smaller than that of undoped SnO2 (4.55×10(-2) Ω cm). Finally, an FTO film was consecutively deposited for protecting the oxidation of indium tin oxide films. The resistivity of the double-layered film was 2.68×10(-4) Ω cm, which increased by less than 39% at a 450 °C annealing temperature for 1 h in air.

  18. Optical properties of nanocrystalline WO{sub 3} and WO{sub 3-x} thin films prepared by DC magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Johansson, Malin B., E-mail: majo4400@gmail.com; Niklasson, Gunnar A.; Österlund, Lars, E-mail: lars.osterlund@angstrom.uu.se [Division of Solid State Physics, Department of Engineering Sciences, The Ångström Laboratory, Uppsala University, P.O. Box 534, SE-75121 Uppsala (Sweden); Zietz, Burkhard [Division of Physical Chemistry, Department of Chemistry, The Ångström Laboratory, Uppsala University, P.O. Box 523, SE-75120 Uppsala (Sweden)

    2014-06-07

    The optical properties of tungsten trioxide thin films prepared by DC magnetron sputtering, with different oxygen vacancy (V{sub o}) concentration, have been studied by spectrophotometry and photoluminescence (PL) emission spectroscopy. Absorption and PL spectra show that the films exhibit similar band gap energies, E{sub g} ≈ 2.9 eV. The absorption spectra of the films show two pronounced absorption bands in the near-infrared region. One peak (P1) is located at approximately 0.7 eV, independent of V{sub o} concentration. A second peak (P2) shifts from 0.96 eV to 1.16 eV with decreasing V{sub o} concentration. Peak P1 is assigned to polaron absorption due to transitions between tungsten sites (W{sup 5+} → W{sup 6+}), or an optical transition from a neutral vacancy state to the conduction band, V{sub o}{sup 0} → W{sup 6+}. The origin of peak P2 is more uncertain but may involve +1 and +2 charged vacancy sites. The PL spectra show several emission bands in the range 2.07 to 3.10 eV in the more sub-stoichiometric and 2.40 to 3.02 eV in the less sub-stoichiometric films. The low energy emission bands agree well with calculated optical transition energies of oxygen vacancy sites, with dominant contribution from neutral and singly charged vacancies in the less sub-stoichiometric films, and additional contributions from doubly charged vacancy sites in the more sub-stoichiometric films.

  19. Tuning the Photocatalytic Activity of Anatase TiO2 Thin Films by Modifying the Preferred <001> Grain Orientation with Reactive DC Magnetron Sputtering

    Directory of Open Access Journals (Sweden)

    B. Stefanov

    2014-08-01

    Full Text Available Anatase TiO2 thin films were deposited by DC reactive magnetron sputtering on glass substrates at 20 mTorr pressure in a flow of an Ar and O2 gas mixture. The O2 partial pressure (PO2 was varied from 0.65 mTorr to 1.3 mTorr to obtain two sets of films with different stoichiometry. The structure and morphology of the films were characterized by secondary electron microscopy, atomic force microscopy, and grazing-angle X-ray diffraction complemented by Rietveld refinement. The as-deposited films were amorphous. Post-annealing in air for 1 h at 500 °C resulted in polycrystalline anatase film structures with mean grain size of 24.2 nm (PO2 = 0.65 mTorr and 22.1 nm (PO2 = 1.3 mTorr, respectively. The films sputtered at higher O2 pressure showed a preferential orientation in the <001> direction, which was associated with particle surfaces exposing highly reactive {001} facets. Films sputtered at lower O2 pressure exhibited no, or very little, preferential grain orientation, and were associated with random distribution of particles exposing mainly the thermodynamically favorable {101} surfaces. Photocatalytic degradation measurements using methylene blue dye showed that <001> oriented films exhibited approximately 30% higher reactivity. The measured intensity dependence of the degradation rate revealed that the UV-independent rate constant was 64% higher for the <001> oriented film compared to randomly oriented films. The reaction order was also found to be higher for <001> films compared to randomly oriented films, suggesting that the <001> oriented film exposes more reactive surface sites.

  20. Effect of deposition angle on the structure and properties of pulsed-DC magnetron sputtered TiAlN thin films

    Energy Technology Data Exchange (ETDEWEB)

    Shetty, A.R., E-mail: akshath.shetty@epfl.c [Institut de Physique de la Matiere Condensee (IPMC), Ecole Polytechnique Federale de Lausanne (EPFL), CH-1015, Lausanne (Switzerland); Karimi, A. [Institut de Physique de la Matiere Condensee (IPMC), Ecole Polytechnique Federale de Lausanne (EPFL), CH-1015, Lausanne (Switzerland); Cantoni, M. [Centre Interdisciplinaire De Microscopie Electronique (CIME), Ecole Polytechnique Federale de Lausanne (EPFL), CH-1015, Lausanne (Switzerland)

    2011-04-29

    This article reports the comparison of structure and properties of titanium aluminum nitride (TiAlN) films deposited onto Si(100) substrates under normal and oblique angle depositions using pulsed-DC magnetron sputtering. The substrate temperature was set at room temperature, 400 {sup o}C and 650 {sup o}C, and the bias was kept at 0, - 25, - 50, and - 80 V for both deposition angles. The surface and cross-section of the films were observed by scanning electron microscopy. It was found that as the deposition temperature increases, films deposited under normal incidence exhibit distinct faceted crystallites, whereas oblique angle deposited (OAD) films develop a kind of 'tiles of a roof' or 'stepwise structure', with no facetted crystallites. The OAD films showed an inclined columnar structure, with columns tilting in the direction of the incident flux. As the substrate temperature was increased, the tilting of columns nearly approached the substrate normal. Both hardness and Young's modulus decreases when the flux angle was changed from {alpha} = 0{sup o} to 45{sup o} as measured by nanoindentation. This was attributed to the voids formed due to the shadowing effect. The crystallographic properties of these coatings were studied by {theta}-2{theta} scan and pole figure X-ray diffraction. Films deposited at {alpha} = 0{sup o} showed a mixed (111) and (200) out-of-plane orientation with random in-plane alignment. On the other hand, films deposited at {alpha} = 45{sup o} revealed an inclined texture with (111) orientation moving towards the incident flux direction and the (200) orientation approaching the substrate normal, showing substantial in-plane alignment.

  1. TiO{sub 2} thin films with rutile phase prepared by DC magnetron co-sputtering at room temperature: Effect of Cu incorporation

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Hui [Institute of Nanoscience and Nanotechnology, College of Physical Science and Technology, Central China Normal University, Wuhan 430079 (China); Hubei Province Key Laboratory of Systems Science in Metallurgical Process, Wuhan University of Science and Technology, Wuhan 430081 (China); Li, Yujie; Ba, Xin; Huang, Lin [Institute of Nanoscience and Nanotechnology, College of Physical Science and Technology, Central China Normal University, Wuhan 430079 (China); Yu, Ying, E-mail: yuying01@mail.ccnu.edu.cn [Institute of Nanoscience and Nanotechnology, College of Physical Science and Technology, Central China Normal University, Wuhan 430079 (China)

    2015-08-01

    Highlights: • TiO{sub 2} film mainly with rutile phase can be prepared by DC sputtering at room temperature with incorporated Cu of modest concentration. • With the increase of Cu-incorporated concentration, the optical band gap of TiO{sub 2} film displays a systematic decrease. • The possible incorporation of Cu{sup 1+} in sites previously occupied by Ti{sup 4+} leads to a gradual change from anatase to rutile phase. - Abstract: The thin films for pure TiO{sub 2} and that incorporated with Cu ion were deposited by DC magnetron co-sputtering with Ar gas. The crystal texture, surface morphology, energy gap and optical properties of the prepared films have been investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray photoelectron spectrometer (XPS), UV–vis spectrophotometer, and Raman spectroscopy. The results show that as-deposited TiO{sub 2} film mainly possesses anatase structure at room temperature with pure Ar gas, but the introduction of Cu can alter the phase structure of crystallite TiO{sub 2}. XRD patterns and Raman spectra indicate that the Cu incorporation with high concentration (A{sub Cu}/A{sub Ti} + A{sub Cu} ≈ 20%) favors the formation of rutile phase. Moreover, the Cu incorporation into TiO{sub 2} lattice induces band gap narrowing. Band structures and density of states have been analyzed based on density functional theory (DFT) and periodic models in order to investigate the influence of the Cu incorporation on the electronic structure of TiO{sub 2}. Both experimental data and electronic structure calculations evidence the fact that the change in film structure from the anatase to the rutile phase can be ascribed to the possible incorporation of Cu{sup 1+} in the sites previously occupied by Ti{sup 4+}, and the presence of Cu results in important effect on the electronic states, which is mainly related to the 3d Cu orbitals in the gap and in the vicinity of the valence band edges for TiO{sub 2}.

  2. Discrete time domain modelling and analysis of dc-dc converters with continuous and discontinuous inductor current

    Science.gov (United States)

    Iwens, R. P.; Lee, F. C.; Triner, J. E.

    1977-01-01

    Using discrete time state variable representation, a generalized computer-aided modeling and analysis of dc-dc converters is presented. The methodology provides exact modeling and is applicable to all types of power stages and duty-cycle control, including continuous and discontinuous inductor current operation. Converter stability, transient behavior and audio susceptibility can be analytically evaluated and predicted. The generalized theory of the proposed approach to converter modeling and analysis is presented first, followed by a demonstrative example applying the theory to a constant frequency buck converter operating in continuous and discontinuous inductor current mode. Excellent agreement with laboratory test data has been observed.

  3. Discrete time domain modelling and analysis of dc-dc converters with continuous and discontinuous inductor current

    Science.gov (United States)

    Iwens, R. P.; Lee, F. C.; Triner, J. E.

    1977-01-01

    Using discrete time state variable representation, a generalized computer-aided modeling and analysis of dc-dc converters is presented. The methodology provides exact modeling and is applicable to all types of power stages and duty-cycle control, including continuous and discontinuous inductor current operation. Converter stability, transient behavior and audio susceptibility can be analytically evaluated and predicted. The generalized theory of the proposed approach to converter modeling and analysis is presented first, followed by a demonstrative example applying the theory to a constant frequency buck converter operating in continuous and discontinuous inductor current mode. Excellent agreement with laboratory test data has been observed.

  4. Rotor position sensor switches currents in brushless dc motors

    Science.gov (United States)

    1965-01-01

    Reluctance switch incorporated in an induction motor is used for sensing rotor position and switching armature circuits in a brushless dc motor. This device drives the solar array system of an unmanned space satellite.

  5. Brushless DC motor Drive during Speed regulation with Current Controller

    OpenAIRE

    Bhikshalu Manchala; T.Amar Kiran

    2015-01-01

    Brushless DC Motor (BLDC) is one of the best electrical drives that have increasing popularity, due to their high efficiency, reliability, good dynamic response and very low maintenance. Due to the increasing demand for compact & reliable motors and the evolution of low cost power semiconductor switches and permanent magnet (PM) materials, brushless DC motors become popular in every application from home appliances to aerospace industry. The conventional techniques for controlling...

  6. AC Voltage Control of DC/DC Converters Based on Modular Multilevel Converters in Multi-Terminal High-Voltage Direct Current Transmission Systems

    Directory of Open Access Journals (Sweden)

    Rui Li

    2016-12-01

    Full Text Available The AC voltage control of a DC/DC converter based on the modular multilevel converter (MMC is considered under normal operation and during a local DC fault. By actively setting the AC voltage according to the two DC voltages of the DC/DC converter, the modulation index can be near unity, and the DC voltage is effectively utilized to output higher AC voltage. This significantly decreases submodule (SM capacitance and conduction losses of the DC/DC converter, yielding reduced capital cost, volume, and higher efficiency. Additionally, the AC voltage is limited in the controllable range of both the MMCs in the DC/DC converter; thus, over-modulation and uncontrolled currents are actively avoided. The AC voltage control of the DC/DC converter during local DC faults, i.e., standby operation, is also proposed, where only the MMC connected on the faulty cable is blocked, while the other MMC remains operational with zero AC voltage output. Thus, the capacitor voltages can be regulated at the rated value and the decrease of the SM capacitor voltages after the blocking of the DC/DC converter is avoided. Moreover, the fault can still be isolated as quickly as the conventional approach, where both MMCs are blocked and the DC/DC converter is not exposed to the risk of overcurrent. The proposed AC voltage control strategy is assessed in a three-terminal high-voltage direct current (HVDC system incorporating a DC/DC converter, and the simulation results confirm its feasibility.

  7. Research on fast solid state DC breaker based on a natural current zero-crossing point

    National Research Council Canada - National Science Library

    Xiang, Wang; Hua, Yu; Wen, Jinyu; Yao, Meiqi; Li, Naihu

    2014-01-01

    ...), where a fault current appears at the natural zero-crossing point near the inverter. At this point, by coordinating the AC breakers near the rectifier, the DC breaker could reliably cut off the DC fault current and protect the system...

  8. Research and Development for an Alternative RF Source Using Magnetrons in CEBAF

    Science.gov (United States)

    Jacobs, Andrew

    2016-09-01

    At Jefferson Lab, klystrons are currently used as a radiofrequency (RF) power source for the 1497 MHz Continuous Electron Beam Accelerator Facility (CEBAF) Continuous Wave (CW) system. A drop-in replacement for the klystrons in the form of a system of magnetrons is being developed. The klystron DC-RF efficiency at CEBAF is 35-51% while the estimated magnetron efficiency is 80-90%. Thus, the introduction of magnetrons to CEBAF will have enormous benefits in terms of electrical power saving. The primary focus of this project was to characterize a magnetron's frequency pushing and pulling curves at 2.45 GHz with stub tuner and anode current adjustments so that a Low Level RF controller for a new 1.497 GHz magnetron can be built. A Virtual Instrument was created in LabVIEW, and data was taken. The resulting data allowed for the creation of many constant lines of frequency and output power. Additionally, the results provided a characterization of magnetron oven temperature drift over the operation time and the relationship between anode current and frequency. Using these results, the control model of different variables and their feedback or feedforward that affect the frequency pushing and pulling of the magnetron is better developed. Department of Energy, Science Undergraduate Laboratory Internships, and Jefferson Lab.

  9. The effects of substrate and annealing on structural and electrochemical properties in LiCoO2 thin films prepared by DC magnetron sputtering.

    Science.gov (United States)

    Noh, Jung Pil; Jung, Ki Taek; Cho, Gyu Bong; Lee, Sang Hun; Kim, Ki Won; Nam, Tae Hyun

    2012-07-01

    LiCoO2 thin films were fabricated by direct current magnetron sputtering method on STS304 and Ti substrates. The effects of substrate and annealing on their structural and electrochemical properties of LiCoO2 thin film cathode were studied. Crystal structures and surface morphologies of the deposited films were investigated by X-ray diffraction and field emission scanning electron microscopy. The as-deposited films on both substrates have amorphous structure. The (104) oriented perfect crystallization was obtained by annealing over 600 degrees C in STS304 substrate. The LiCoO2 thin film deposited on Ti substrate shows the (003) texture after annealing at 700 degrees C. The electrochemical properties were investigated by the cyclic voltammetry and charge-discharge measurement. The 600 degrees C-annealed LiCoO2 film deposited on STS304 substrate exhibits the inithial discharge capacity of 22 uAh/cm2 and the 96% capacity retention rate at 50th cycles. The electrochemical measurement on annealed films over 600 degrees C was impossible due to the formed TiO2 insulator layer using Ti substrate. As a result, it was found that the STS304 substrate seems to be more suitable material than the Ti substrate in fabricating LiCoO2 thin film cathode.

  10. Bifurcation and chaos in multi-parallel-connected current-mode controlled boost DC-DC converters

    Institute of Scientific and Technical Information of China (English)

    CHEN Ming-liang; MA Wei-ming

    2006-01-01

    This paper studied the bifurcation and chaos phenomenon in a multi-parallel-connected current-mode controlled boost DC-DC converter system with the use of nonlinear mapping bifurcation theory of two dimensions,and the changing rules of the bifurcation charts with the increase of the control parallels and control parameters were concluded.The method of discrete mapping modeling was utilized to construct the difference equations of the system operating in continuous conduction mode (CCM).Analyses and computer emulations were made.

  11. Distributed Secondary Control for DC Microgrid Applications with Enhanced Current Sharing Accuracy

    DEFF Research Database (Denmark)

    Lu, Xiaonan; Guerrero, Josep M.; Sun, Kai

    2013-01-01

    are used locally as the distributed secondary controllers in each converter to enhance the current sharing accuracy and restore the dc bus voltage simultaneously. All the controllers are realized locally and the LBC system is only used for changing the data of dc voltage and current. Thus, a decentralized......, a distributed secondary control method is proposed. Droop control is employed as the primary control method for load current sharing. Meanwhile, the dc output voltage and current in each module is transferred to the others by the low bandwidth communication (LBC) network. Average voltage and current controllers...

  12. Process stabilization by peak current regulation in reactive high-power impulse magnetron sputtering of hafnium nitride

    Science.gov (United States)

    Shimizu, T.; Villamayor, M.; Lundin, D.; Helmersson, U.

    2016-02-01

    A simple and cost effective approach to stabilize the sputtering process in the transition zone during reactive high-power impulse magnetron sputtering (HiPIMS) is proposed. The method is based on real-time monitoring and control of the discharge current waveforms. To stabilize the process conditions at a given set point, a feedback control system was implemented that automatically regulates the pulse frequency, and thereby the average sputtering power, to maintain a constant maximum discharge current. In the present study, the variation of the pulse current waveforms over a wide range of reactive gas flows and pulse frequencies during a reactive HiPIMS process of Hf-N in an Ar-N2 atmosphere illustrates that the discharge current waveform is a an excellent indicator of the process conditions. Activating the reactive HiPIMS peak current regulation, stable process conditions were maintained when varying the N2 flow from 2.1 to 3.5 sccm by an automatic adjustment of the pulse frequency from 600 Hz to 1150 Hz and consequently an increase of the average power from 110 to 270 W. Hf-N films deposited using peak current regulation exhibited a stable stoichiometry, a nearly constant power-normalized deposition rate, and a polycrystalline cubic phase Hf-N with (1 1 1)-preferred orientation over the entire reactive gas flow range investigated. The physical reasons for the change in the current pulse waveform for different process conditions are discussed in some detail.

  13. AC Loss of Ripple Current in Superconducting DC Power Transmission Cable

    Science.gov (United States)

    Yoshitomi, K.; Otabe, E. S.; Vyatkin, V. S.; Kiuchi, M.; Matsushita, T.; Hamabe, M.; Yamaguchi, S.; Inada, R.

    As a method of largely reducing the transmission loss in the electric power grid, superconducting direct current (DC) power transmission cable has been investigated. Using superconducting DC power transmission cables, large amounts of current and energy can be transferred compared to conventional copper cables. In this case, an alternating current (AC) is converted to DC and superposed AC which is known as ripple current, and the energy loss by the ripple current is generated. Therefore it is desired to estimate the energy loss density for the case of DC current and superposed AC current for a design of DC transmission cable system. In this study, the hysteresis loss for DC current of 2 kA rectified from 60 Hz alternating current is calculated using the Bean model, and coupling loss was also estimated. The diameter of the cable was 40 mm. The ripple currents generated by multi-pulse rectifiers, 6-pulse, 12-pulse, and 24-pulse were considered. It is found that the total AC loss including the hysteresis loss and the coupling loss is considerably smaller than the supposed heat loss of 0.5 W/m which is obtained with a newly developed cable.

  14. Effect of deposition temperature on microstructure and corrosion resistance of ZrN thin films deposited by DC reactive magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Roman, Daiane; Bernardi, Juliane; Amorim, Cintia L.G. de [Centro de Ciencias Exatas e Tecnologia, Universidade de Caxias do Sul, Caxias do Sul, RS 95070-560 (Brazil); Souza, Fernando S. de; Spinelli, Almir [Departamento de Quimica, Universidade Federal de Santa Catarina, Florianopolis, SC 88040-900 (Brazil); Giacomelli, Cristiano [Departamento de Quimica, Universidade Federal de Santa Maria, Santa Maria, RS 97105-900 (Brazil); Figueroa, Carlos A. [Centro de Ciencias Exatas e Tecnologia, Universidade de Caxias do Sul, Caxias do Sul, RS 95070-560 (Brazil); Baumvol, Israel J.R. [Centro de Ciencias Exatas e Tecnologia, Universidade de Caxias do Sul, Caxias do Sul, RS 95070-560 (Brazil); Instituto de Fisica, Universidade Federal do Rio Grande do Sul, Porto Alegre, RS 91509-970 (Brazil); Basso, Rodrigo L.O., E-mail: rlobasso@ucs.br [Centro de Ciencias Exatas e Tecnologia, Universidade de Caxias do Sul, Caxias do Sul, RS 95070-560 (Brazil)

    2011-10-17

    Highlights: {center_dot} Deposition conditions determine the thickness and microstructure of the ZrN films. {center_dot} For ZrN films relatively thin, the microstructure shows no preferred orientation. {center_dot} For ZrN film relatively thick, preferred orientation is in the (1 1 1) direction. {center_dot} Composition and microstructure controls the corrosion resistance of the ZrN films. {center_dot} The air exposure forms oxide and oxynitride layer promoting the corrosion resistance. - Abstract: Thin films of zirconium nitride were deposited on different substrates by direct current reactive magnetron sputtering, varying the deposition time, Ar/N{sub 2} partial pressure ratio and substrate temperature. The physicochemical, crystalline structure and corrosion resistance of the thin films were studied by glancing angle X-ray diffraction, Rutherford backscattering spectrometry, scanning electron microscopy, X-ray photoelectron spectroscopy and potentiodynamic polarization tests in artificial saliva solution. The results show that the thin films presents high texture in [1 1 1] direction verified by X-ray diffraction measurements which indicated the lack of a Bragg peak for (2 0 0) crystallographic planes for a lower deposition temperatures. The XPS analysis showed the presence of ZrN and also the oxide species (ZrN{sub x}O{sub y} and ZrO{sub 2}) at the surface, with chemical states changing with deposition temperatures. In addition, the thin ZrN films were found to be stable in an electrochemical cell over a large potential range and the pitting potential increases with increasing the deposition temperature. For deposition at 500 deg. C, the pitting potential was found to be E{sub p} = 1.5 V/SCE. The corrosion behavior is attributed to the formation of thin ZrN{sub x}O{sub y} and ZrO{sub 2} layer on the top surface of the films, with increasing of the deposition temperature.

  15. The effect of the oxygen ratio control of DC reactive magnetron sputtering on as-deposited non stoichiometric NiO thin films

    Science.gov (United States)

    Wang, Mengying; Thimont, Yohann; Presmanes, Lionel; Diao, Xungang; Barnabé, Antoine

    2017-10-01

    Non-stoichiometric Ni1-xO thin films were prepared on glass substrate by direct current reactive magnetron sputtering in a large range of oxygen partial pressure (0 ≤ pO2 ≤ 1 Pa). The dependence of the deposited film structure and properties on oxygen stoichiometry were systematically analyzed by X-ray diffraction, X-ray reflectivity, X-ray photoemission spectroscopy, Raman spectroscopy, atomic force microscopy, UV-vis measurements and electrical transport properties measurements. The deposition rates, surface morphology and opto-electrical properties are very sensitive to the oxygen partial pressure lower than 0.05 Pa due to the presence of metallic nickel cluster phase determined by X-ray diffraction, X-ray reflectivity and XPS spectroscopy. Presence of nanocrystallized NiO phase was highlighted even for pO2 = 0 Pa. For pO2 > 0.05 Pa, only the NiO phase was detected. Progressive appearance of Ni3+ species is characterized by a fine increase of the lattice parameter and (111) preferred orientation determined by grazing angle X-ray diffraction, fine increase of the X-ray reflectivity critical angle, displacement of the Ni 2p3/2 signal towards lower energy, significant increase of the electrical conductivity and decrease of the total transmittance. Quantification of Ni3+ by XPS method is discussed. We also showed that the use of Raman spectroscopy was relevant for demonstrating the presence of Ni3+ in the Ni1-xO thin films.

  16. Equivalent Circuit for Half-Bridge MMC Dc Fault Current Contribution

    OpenAIRE

    Leterme, Willem; Beerten, Jef; Van Hertem, Dirk

    2016-01-01

    The modular multilevel converter (MMC) is currently the preferred converter topology for HVDC point-to-point links and the likely choice for future meshed HVDC grids. For breaker dimensioning or protection system design, thorough knowledge of the dc fault currents supplied by these converters is required. In this paper, the dc fault current supplied by the half-bridge MMC is analyzed and an equivalent circuit model is proposed. The proposed equivalent circuit has a low complexity and accurate...

  17. DC Link Current Estimation in Wind-Double Feed Induction Generator Power Conditioning System

    Directory of Open Access Journals (Sweden)

    MARIAN GAICEANU

    2010-12-01

    Full Text Available In this paper the implementation of the DC link current estimator in power conditioning system of the variable speed wind turbine is shown. The wind turbine is connected to double feed induction generator (DFIG. The variable electrical energy parameters delivered by DFIG are fitted with the electrical grid parameters through back-to-back power converter. The bidirectional AC-AC power converter covers a wide speed range from subsynchronous to supersynchronous speeds. The modern control of back-to-back power converter involves power balance concept, therefore its load power should be known in any instant. By using the power balance control, the DC link voltage variation at the load changes can be reduced. In this paper the load power is estimated from the dc link, indirectly, through a second order DC link current estimator. The load current estimator is based on the DC link voltage and on the dc link input current of the rotor side converter. This method presents certain advantages instead of using measured method, which requires a low pass filter: no time delay, the feedforward current component has no ripple, no additional hardware, and more fast control response. Through the numerical simulation the performances of the proposed DC link output current estimator scheme are demonstrated.

  18. A Dual-Mode Step-up DC/DC Converter IC with Current-Limiting and EMI Reduction Techniques

    Institute of Scientific and Technical Information of China (English)

    Wan-Rone Liou; Chun-Ting Kuo; Mei-Ling Yeh; Ping-Hsing Chen; Marynelle L. Z. Rosales

    2008-01-01

    This paper presents a novel dual-mode step-up (boost) DC/DC converter. Pulse-frequency modulation (PFM) is used to improve the efficiency at light load. This converter can operate between pulse-width modulation (PWM) and pulse-frequency modulation. The converter will operate in PFM mode at light load and in PWM mode at heavy load. The maximum conversion efficiency of this converter is 96%. The conversion efficiency is greatly improved when load current is below 100 mA. Additionally, a soft-start circuit and a variable-sawtooth frequency circuit are proposed in this paper. The former is used to avoid the large switching current at the start up of the converter and the latter is utilized to reduce the EMI of the converter.

  19. Optical properties of aluminum nitride thin films grown by direct-current magnetron sputtering close to epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Stolz, A. [Institut d' Electronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, PRES Lille, Université Nord de France, Avenue Poincaré, 59652 Villeneuve d' Ascq Cedex (France); Soltani, A., E-mail: ali.soltani@iemn.univ-lille1.fr [Institut d' Electronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, PRES Lille, Université Nord de France, Avenue Poincaré, 59652 Villeneuve d' Ascq Cedex (France); Abdallah, B. [Department of Materials Physics, Atomic Energy Commission of Syria, Damascus, P.O. Box 6091 (Syrian Arab Republic); Charrier, J. [Fonctions Optiques pour les Technologies de l' informatiON (FOTON), UMR CNRS 6082, 6, rue de Kerampont CS 80518, 22305 Lannion Cedex (France); Deresmes, D. [Institut d' Electronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, PRES Lille, Université Nord de France, Avenue Poincaré, 59652 Villeneuve d' Ascq Cedex (France); Jouan, P.-Y.; Djouadi, M.A. [Institut des Matériaux Jean Rouxel – IMN, UMR CNRS 6502, 2, rue de la Houssinère BP 32229, 44322 Nantes (France); Dogheche, E.; De Jaeger, J.-C. [Institut d' Electronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, PRES Lille, Université Nord de France, Avenue Poincaré, 59652 Villeneuve d' Ascq Cedex (France)

    2013-05-01

    Low-temperature Aluminum Nitride (AlN) thin films with a thickness of 3 μm were deposited by Direct-Current magnetron sputtering on sapphire substrate. They present optical properties similar to those of epitaxially grown films. Different characterization methods such as X-Ray Diffraction, Transmission Electron Microscopy and Atomic Force Microscopy were used to determine the structural properties of the films such as its roughness and crystallinity. Newton interferometer was used for stress measurement of the films. Non-destructive prism-coupling technique was used to determine refractive index and thickness homogeneity by a mapping on the whole sample area. Results show that AlN films grown on AlGaN layer have a high crystallinity close to epitaxial films, associated to a low intrinsic stress for low thickness. These results highlight that it is possible to grow thick sample with microstructure and optical properties close to epitaxy, even on a large surface. - Highlights: ► Aluminum Nitride sputtering technique with a low temperature growth process ► Epitaxial quality of two microns sputtered Aluminum Nitride film ► Optics as a non-destructive accurate tool for acoustic wave investigation.

  20. Surface textured molybdenum doped zinc oxide thin films prepared for thin film solar cells using pulsed direct current magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Y.C., E-mail: ielinyc@cc.ncue.edu.tw; Wang, B.L.; Yen, W.T.; Shen, C.H.

    2011-06-01

    In this study, we examined the effect of etching on the electrical properties, transmittance, and scattering of visible light in molybdenum doped zinc oxide, ZnO:Mo (MZO) thin films prepared by pulsed direct current magnetron sputtering. We used two different etching solutions - KOH and HCl - to alter the surface texture of the MZO thin film so that it could trap light. The experimental results showed that an MZO film with a minimum resistivity of about 8.9 x 10{sup -4} {Omega} cm and visible light transitivity of greater than 80% can be obtained without heating at a Mo content of 1.77 wt.%, sputtering power of 100 W, working pressure of 0.4 Pa, pulsed frequency of 10 kHz, and film thickness of 500 nm. To consider the effect of resistivity and optical diffuse transmittance, we performed etching of an 800 nm thick MZO thin film with 0.5 wt.% HCl for 3-6 s at 300 K. Consequently, we obtained a resistivity of 1.74-2.75 x 10{sup -3} {Omega} cm, total transmittance at visible light of 67%-73%, diffuse transmittance at visible light of 25.1%-28.4%, haze value of 0.34-0.42, and thin film surface crater diameters of 220-350 nm.

  1. Multiphase soft switched DC/DC converter and active control technique for fuel cell ripple current elimination

    Energy Technology Data Exchange (ETDEWEB)

    Lai, Jih-Sheng (Blacksburg, VA); Liu, Changrong (Sunnyvale, CA); Ridenour, Amy (Salem, VA)

    2009-04-14

    DC/DC converter has a transformer having primary coils connected to an input side and secondary coils connected to an output side. Each primary coil connects a full-bridge circuit comprising two switches on two legs, the primary coil being connected between the switches on each leg, each full-bridge circuit being connected in parallel wherein each leg is disposed parallel to one another, and the secondary coils connected to a rectifying circuit. An outer loop control circuit that reduces ripple in a voltage reference has a first resistor connected in series with a second resistor connected in series with a first capacitor which are connected in parallel with a second capacitor. An inner loop control circuit that reduces ripple in a current reference has a third resistor connected in series with a fourth resistor connected in series with a third capacitor which are connected in parallel with a fourth capacitor.

  2. A Dual-Mode Step-up DC/DC Converter IC with Current-Limiting and EMI Reduction Techniques

    Institute of Scientific and Technical Information of China (English)

    Wan-Rone Liou; Chun-Ting Kuo; Mei-Ling Yeh; Ping-Hsing Chen; Marynelle L. Z. Rosales

    2008-01-01

    This paper presents a novel dual-modestep-up (boost) DC/DC converter. Pulse-frequencymodulation (PFM) is used to improve the efficiency atlight load. This converter can operate betweenpulse-width modulation (PWM) and pulse-frequencymodulation. The converter will operate in PFM mode atlight load and in PWM mode at heavy load. Themaximum conversion efficiency of this converter is 96%.The conversion efficiency is greatly improved when loadcurrent is below 100 mA. Additionally, a soft-startcircuit and a variable-sawtooth frequency circuit areproposed in this paper. The former is used to avoid thelarge switching current at the start up of the converterand the latter is utilized to reduce the EMI of theconverter.

  3. Method for Estimating Low-Frequency Return Current of DC Electric Railcar

    Science.gov (United States)

    Hatsukade, Satoru

    The Estimation of the harmonic current of railcars is necessary for achieving compatibility between train signaling systems and railcar equipment. However, although several theoretical analyses methods for estimating the harmonic current of railcars using switching functions exist, there are no theoretical analysis methods estimating a low-frequency current at a frequency less than the power converter's carrier frequency. This paper describes a method for estimating the spectrum (frequency and amplitude) of the low-frequency return current of DC electric railcars. First, relationships between the return current and characteristics of the DC electric railcars, such as mass and acceleration, are determined. Then, the mathematical (not numerical) calculation results for low-frequency current are obtained from the time-current curve for a DC electric railcar by using Fourier series expansions. Finally, the measurement results clearly show the effectiveness of the estimation method development in this study.

  4. Research on current sharing of paralleled IGBTs in different DC breaker circuit topologies

    Directory of Open Access Journals (Sweden)

    Chen Ying

    2016-01-01

    Full Text Available IGBT modules used in series and parallel to satisfy the requirement in high-power DC circuit breakers are often prone to large-current destruction due to current unbalance between paralleled IGBTs. It is of great importance to identify the current unbalance causes and to find a method optimizing the current sharing of paralleled IGBTs. In this paper the current-sharing influencing factors are discussed and verified by simulation. Two possible circuit topologies used in DC circuit breakers are proposed and simulated to see their performance in current sharing. The results show that one of them can provide us with a simple and effective method to achieve good current balancing in the DC circuit breaker application.

  5. Microstructure, mechanical properties and wetting behavior of F: Si–C–N films as bio-mechanical coating grown by DC unbalanced magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Shi, Zhifeng, E-mail: scut0533@126.com [School of Materials Science and Engineering, South China University of Technology, Guangzhou 510641 (China); Wang, Yingjun, E-mail: imwangyj@163.com [School of Materials Science and Engineering, South China University of Technology, Guangzhou 510641 (China); Huang, Nan [Key Lab. for Advanced Technologies of Materials, Ministry of Education, Southwest Jiaotong University, 610031 Chengdu (China); Ning, Chengyun; Wang, Lin [School of Materials Science and Engineering, South China University of Technology, Guangzhou 510641 (China)

    2013-03-05

    Highlights: ► The F: Si–C–N film coating on Co–Cr alloy as bio-mechanical coating was put forward. ► Significant role of F and C doped on structure and properties in the film was observed. ► The as-deposited F: Si–C–N films are amphipathic nature. ► F: Si–C–N coatings show improvement in the tribological behavior over the uncoated Co–Cr–Mo. ► Compared with Co–Cr alloy, F: Si–C–N films could improve hardness enhances 1.7 times. -- Abstract: A systematic structure and properties investigation on the deposition of fluorinated silicon–carbon–nitride (Si–C–N) films under varying CF{sub 4} flows was carried out by direct current unbalanced magnetron sputtering techniques. Significant role of fluorine and carbon-doped on growth characteristics and mechanical properties in the film was observed. The chemical bonding configurations, surface topography and mechanical properties were characterized by means of X-ray photoelectron spectroscopy (XPS), Raman and infrared spectroscopies, atomic force microscopy (AFM) and nano-indentation technique and CSM pin-on-disk tribometer. It was found that the as-deposited F: Si–C–N films are amphipathic nature, and large variations took place these films’ deposition rate, composition, microstructure and mechanical properties when CF{sub 4} flows varied from 0 to 9 sccm. At CF{sub 4} gas flow rate 9 sccm, the F: Si–C–N coatings demonstrated a fluorine content of 5.95 at.% and a moderate friction coefficient of 0.03. It is obvious from the hardness results that the F: Si–C–N coating enhances the hardness of the Co–Cr–Mo alloy to approximately 16.3 GPa on a smoother surface. The tribological characterization of Co–Cr–Mo alloy with F: Si–C–N coating sliding against ultrahigh molecular weight polyethylene (UHMWPE) counter-surface in fetal bovine serum, shows that the wear resistance of the F: Si–C–N coated Co–Cr–Mo alloy/UHMWPE sliding pair show much obviously

  6. Design and implementation of adaptive slope compensation in current mode DC-DC converter

    Energy Technology Data Exchange (ETDEWEB)

    Guo Zhongjie; Wu Longsheng; Liu Youbao, E-mail: guozhongjie4213@126.com [Xi' an Microelectronic Technology Institute, Xi' an 710054 (China)

    2010-12-15

    To improve the compensation for the inherent instability in a current mode converter, the adaptive slope compensation, giving attention to the problems of the traditional compensation on compensation accuracy, loading capability and turning jitter, is presented. Based on the analysis of current loop, by detecting the input and output voltage, converting the adaptive slope compensation current, the compensation of the current loop is optimized successfully. It can not only improve the compensation accuracy but also eliminate the over compensation, the turning jitter and the poor loading capability in the reported slope compensation. A power supply chip with adaptive slope compensation has been fabricated in a 0.35 {mu}m CMOS process. The measurement results show that the chip starts up and operates steadily with the constant current limit under conditions of 5 V input voltage, from 10% to 100% duty cycle. (semiconductor integrated circuits)

  7. Research on Digital Output Verification Technology of Electronic DC Current Transformer

    Science.gov (United States)

    Chen, Yuanjie; Wang, Bin; Hu, Haoliang; Xiong, Qianzhu; Yang, Chunyan

    2017-05-01

    Aiming at the error of calibration system when conducting field calibration by electronic DC current transformer’s digital calibration system, an electronic DC current transformer’s digital calibration system based on protocol conversion is proposed and researched. Data frames outputted from merging unit are collected and converted by the system, the digital synchronization is realized by using the synchronous clock device to trigger the second pulse, and it is verified by the virtual instrument design software. The field calibration is conducted to some converter station digital dc current transformer under the rated current of 500A by using the calibration system. By calibrating and analyzing errors, the error is less than 0.075% when tested current is more than 40% of the rated current. According the standard in literature[1], performance of the calibration system is perfect, measured results perfectly meet the requirements of design, and the calibration system has great practical application value.

  8. Structure and magnetic properties of columnar Fe-N thin films deposited by direct current magnetron sputtering

    Institute of Scientific and Technical Information of China (English)

    JIA Hui; WANG Xin; PANG Shao-ping; ZHENG Wei-tao; LONG Bei-hong; LI Bo

    2009-01-01

    Columnar Fe-N thin films with thickness ranging from 30 to 150 nm were deposited by direct current magnetron sputtering using an Ar/N2 gas mixture (V(N2)/V(N2+Ar)=5%) on corning glass substrates. The structure, surface morphology and magnetic properties were investigated using X-ray diffractometry(XRD), scanning electron microscopy, atomic force microscopy, transmission electron microscopy(TEM) and superconducting quantum interference magnetometry. XRD investigation shows that Fe-N films exhibit amorphous-like structures; however, TEM measurements indicate the synthesis of mixture phases of α-Fe+ζ-Fe2N+ε-Fe3N in these films. The magnetic anisotropy and coercivity of Fe-N thin films exhibit strong dependence on the film growth behavior and surface morphology. With increasing the height of Fe-N films with column structures, the coercivity increases from 7.96 kA/m to 22.28 kA/m in the direction parallel to the film surface. In perpendicular direction the coercivity only increases slightly from 39.79 kA/m to 43.77 kA/m. However, the values of anisotropy field increase from 0.79×106 to 1.44×106 A/m, which is mainly attributed to the shape anisotropy of elongated columns due to the fact that the difference of magneto-crystalline anisotropy among these Fe-N films is small. The saturation magnetizations of Fe-N films vary with increasing film thickness from 23.5 to 85.1 A-m2/kg.

  9. Design of current source DC/DC converter and inverter for 2kW fuel cell application

    DEFF Research Database (Denmark)

    Andreiciks, A.; Steiks, I.; Krievs, O.

    2013-01-01

    of a DC/DC converter and an inverter. In this paper a detailed simulation study of such interfacing converter system comprising a double inductor push-pull step-up DC/DC converter and a cascaded H-bridge inverter has been carried out and further confirmed with experimental results. The power converter...

  10. DC Vs AC - War Of Currents For Future Power Systems A HVDC Technology Overview

    Directory of Open Access Journals (Sweden)

    Anil K. Rai

    2015-08-01

    Full Text Available DC vs AC discussion began in 1880s with development of first commercial power transmission in Wall Street New York. Later when AC technology came into notice by efforts of inventor and researcher Sir Nicola Tesla soon the advantages of AC transmission and AC devices overtook the DC technology. It was hoped that DC technology had lost battle of currents. Today with researches going on FACTS devices and bulk power transmission HVDC has again gained a reputation in power sector. Solution of this centuries old debate is to develop HVDC systems that assists HVAC systems for better performance stability and control

  11. Research on resistance characteristics of YBCO tape under short-time DC large current impact

    Science.gov (United States)

    Zhang, Zhifeng; Yang, Jiabin; Qiu, Qingquan; Zhang, Guomin; Lin, Liangzhen

    2017-06-01

    Research of the resistance characteristics of YBCO tape under short-time DC large current impact is the foundation of the developing DC superconducting fault current limiter (SFCL) for voltage source converter-based high voltage direct current system (VSC-HVDC), which is one of the valid approaches to solve the problems of renewable energy integration. SFCL can limit DC short-circuit and enhance the interrupting capabilities of DC circuit breakers. In this paper, under short-time DC large current impacts, the resistance features of naked tape of YBCO tape are studied to find the resistance - temperature change rule and the maximum impact current. The influence of insulation for the resistance - temperature characteristics of YBCO tape is studied by comparison tests with naked tape and insulating tape in 77 K. The influence of operating temperature on the tape is also studied under subcooled liquid nitrogen condition. For the current impact security of YBCO tape, the critical current degradation and top temperature are analyzed and worked as judgment standards. The testing results is helpful for in developing SFCL in VSC-HVDC.

  12. Complete bifurcation analysis of DC-DC converters under current mode control

    Science.gov (United States)

    Pikulin, D.

    2014-03-01

    The purpose of this research is to investigate to what extend application of novel method of complete bifurcation groups to the analysis of global dynamics of piecewise-smooth hybrid systems enables one to highlight new nonlinear effects before periodic and chaotic regimes. Results include the construction of complete one and two-parameter bifurcation diagrams, detection of various types of bifurcation groups and investigation of their interactions, localization of rare attractors, and the investigation of different principles of birth of chaotic attractors. Effectiveness of the approach is illustrated in respect to one of the most widely used switching systems-boost converter under current mode control operating in continuous current mode.

  13. Plasma diagnostics of an Ar/NH{sub 3} direct-current reactive magnetron sputtering discharge for SiN{sub x} deposition

    Energy Technology Data Exchange (ETDEWEB)

    Henry, F., E-mail: Fhenry@ulb.ac.be; Duluard, C.Y.; Batan, A.; Reniers, F., E-mail: Freniers@ulb.ac.be

    2012-08-01

    We have performed the deposition of silicon nitride thin films with the DC reactive magnetron sputtering technique from a silicon target in an Ar/NH{sub 3} gas mixture. Usually, the control of the process is carried out with discharge voltage measurements, which give information on the nature of the sputtering mode: metallic or reactive. To have a more complete view of the sputtering process, we have performed X-ray photoelectron spectroscopy (XPS) to investigate the chemistry of the silicon target racetrack and optical emission spectroscopy (OES) to investigate the Ar/NH{sub 3} gas phase near the target surface. When the NH{sub 3} molar fraction is increased, XPS measurements reveal the progressive formation of a silicon nitride layer on the target surface, thereby demonstrating a continuous transition to the reactive mode. OES measurements have highlighted the presence of several species which, according to the literature, are believed to be directly sputtered from the surface of the target: Si, SiH and SiN. Their intensities could be related to the chemical state of the target surface and provide a better insight into the sputtering process on the target surface. - Highlights: Black-Right-Pointing-Pointer Plasma diagnostics of Ar/NH{sub 3} DC reactive magnetron sputtering. Black-Right-Pointing-Pointer Multiple diagnostic techniques. Black-Right-Pointing-Pointer Poisoning of the target by formation of silicon nitride layer. Black-Right-Pointing-Pointer Relation between the light emitted by the plasma and the surface state of the target.

  14. Integrated on-chip 0.35 μm BiCMOS current-mode DC-DC buck converter

    Science.gov (United States)

    Lee, Chan-Soo; Kim, Nam-Soo; Gendensuren, Munkhsuld; Choi, Jae-Ho; Choi, Joong-Ho

    2012-12-01

    A current-mode DC-DC buck converter with a fully integrated power module is presented in this article. The converter is implemented using BiCMOS technology in amplifier and power MOSFET in a current sensor. The current sensor is realised by the power lateral double-diffused MOSFET with the aspect ratio much larger than that of a matched p-MOSFET. In addition, BiCMOS technology is applied in the error amplifier for an accurate current sensing and a fast transient response. The DC-DC converter is fabricated with 0.35 µm BiCMOS process. Experimental results show that the fully integrated converter operates at 1.3 MHz switching frequency with a supply voltage of 5 V. The output DC voltage is obtained as expected and the output ripple is controlled to be within 2% with a 30 µH off-chip inductor and 100 µF off-chip capacitor.

  15. DC current distribution mapping system of the solar panels using a HTS-SQUID gradiometer

    Science.gov (United States)

    Miyazaki, Shingo; Kasuya, Syohei; Mawardi Saari, Mohd; Sakai, Kenji; Kiwa, Toshihiko; Tsukamoto, Akira; Adachi, Seiji; Tanabe, Keiichi; Tsukada, Keiji

    2014-05-01

    Solar panels are expected to play a major role as a source of sustainable energy. In order to evaluate solar panels, non-destructive tests, such as defect inspections and response property evaluations, are necessary. We developed a DC current distribution mapping system of the solar panels using a High Critical Temperature Superconductor Superconducting Quantum Interference Device (HTS-SQUID) gradiometer with ramp edge type Josephson junctions. Two independent components of the magnetic fields perpendicular to the panel surface (∂Bz/∂x, ∂Bz/∂y) were detected. The direct current of the solar panel is visualized by calculating the composition of the two signal components, the phase angle, and mapping the DC current vector. The developed system can evaluate the uniformity of DC current distributions precisely and may be applicable for defect detection of solar panels.

  16. Development of Peltier Current Lead for DC cable Hideo

    Science.gov (United States)

    Sugane; Hikichi, Yasuo; Minowa, Masahiro; Kawahara, Toshio; Watanabe, Hirofumi; Hamabe, Makoto; Yamaguchi, Sataro

    The widespread expectation is that superconducting technologies will be one of the effective technologies to decrease energy loss and improve efficiency in energy grids. Especially, in recent circumstances, applications connecting with renewable energy receive attention. Yamaguchi et al successfully developed 200 m-class superconducting direct current transmission and distribution system (CASER-2) in Chubu University and carried out the demonstration of this system. On this demonstration, "Peltier Current Lead (PCL)" was employed, wherein Peltier device was used for the purpose of pumping up the heat through the down-leads, It was observed that PCL reduced heat leak into cryostat as compared to usual Cu current leads on this demonstration, but some issues to be solved remained, such as heat-cycle performance etc.. In this paper, we designed a prototype PCL for the purpose of improvement of the mechanical strength and the durability for the heat cycle, and evaluated the performance.

  17. Investigation of DC magnetron-sputtered TiO2 coatings: Effect of coating thickness, structure, and morphology on photocatalytic activity

    DEFF Research Database (Denmark)

    Daviðsdóttir, Svava; Shabadi, Rajashekhara; Galca, Aurelian Catalin

    2014-01-01

    The photocatalytic performance of magnetron-sputtered titanium dioxide (TiO2) coatings of different thickness in anatase crystalline structure deposited on aluminium 1050 alloy substrates was investigated using a combination of photo-electrochemistry, methylene blue decomposition, and microscopic...... that the TiO2 grains grow in dipyramidal columns having a linear increase in surface area with increased coating thickness. The refractive index values indicate also an evolutionary growth. The refractive index values obtained for the thin coatings on aluminium substrate were well below the values reported...

  18. DC link current simulation of voltage source inverter with random space vector pulse width modulation

    Directory of Open Access Journals (Sweden)

    Chen Guoqiang

    2016-01-01

    Full Text Available Aiming at analysis complexity, a simulation model is built and presented to analyze and demonstrate the characteristics of the direct current (DC link current of the three-phase two-level inverter with the random space vector pulse width modulation (SVPWM strategy. The developing procedure and key subsystems of the simulation model are given in detail. Several experiments are done using the simulation model. The results verify the efficiency and convenience of the simulation model and show that the random SVPWM scheme, especially the random switching frequency scheme, can efficiently suppress the harmonic peaks of the DC link current.

  19. Dynamical effects of an unconventional current-phase relation in YBCO dc SQUIDs.

    Science.gov (United States)

    Lindström, T; Charlebois, S A; Tzalenchuk, A Ya; Ivanov, Z; Amin, M H S; Zagoskin, A M

    2003-03-21

    The predominant d-wave pairing symmetry in high-temperature superconductors allows for a variety of current-phase relations in Josephson junctions, which is to a certain degree fabrication controlled. In this Letter, we report on direct experimental observations of the effects of a nonsinusoidal current-phase dependence in YBCO dc SQUIDs, which agree with the theoretical description of the system.

  20. DC bias effect on alternating current electrical conductivity of poly(ethylene terephthalate)/alumina nanocomposites

    Science.gov (United States)

    Nikam, Pravin N.; Deshpande, Vineeta D.

    2016-05-01

    Polymer nanocomposites based on metal oxide (ceramic) nanoparticles are a new class of materials with unique properties and designed for various applications such as electronic device packaging, insulation, fabrication and automotive industries. Poly(ethylene terephthalate) (PET)/alumina (Al2O3) nanocomposites with filler content between 1 wt% and 5 wt% were prepared by melt compounding method using co-rotating twin screw extruder and characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM) and precision LCR meter techniques. The results revealed that proper uniform dispersion at lower content up to 2 wt% of nano-alumina observed by using TEM. Aggregation of nanoparticles was observed at higher content of alumina examined by using SEM and TEM. The frequency dependences of the alternating current (AC) conductivity (σAC) of PET/alumina nanocomposites on the filler content and DC bias were investigated in the frequency range of 20Hz - 1MHz. The results showed that the AC and direct current (DC) conductivity increases with increasing DC bias and nano-alumina content upto 3 wt%. It follows the Jonscher's universal power law of solids. It revealed that σAC of PET/alumina nanocomposites can be well characterized by the DC conductivity (σDC), critical frequency (ωc), critical exponent of the power law (s). Roll of DC bias potential led to an increase of DC conductivity (σDC) due to the creation of additional conducting paths with the polymer nanocomposites and percolation behavior achieved through co-continuous morphology.

  1. Analysis of Leakage Current and DC Injection in Transformerless PV Inverter Topologies

    Directory of Open Access Journals (Sweden)

    Anjali Varghese C

    2014-03-01

    Full Text Available Considering low efficiencies of solar panels, the reliability and efficiency of power electronic interface has to be ensured. Transformerless PV inverters increases the efficiency by nearly 2% and decreases cost by 25%. With no galvanic isolation comes the problem of dc injection and ground leakage current which pauses serious problems to core saturation of distribution transformers, cable corrosion, Power quality and EMI problems and has to be limited as per IEEE standards. This paper gives an analysis of leakage current flowing through the parasitic capacitance and also the DC injection in the output of the inverter. Analysis is done for various values of parasitic capacitance. Five different HBridge derived topologies and PWM techniques are evaluated on the basis of leakage current and DC injection.

  2. Input-Parallel Output-Parallel (IPOP) Three-Level (TL) DC/DC Converters with Interleaving Control Strategy for Minimizing and Balancing Capacitor Ripple Currents

    DEFF Research Database (Denmark)

    Liu, Dong; Deng, Fujin; Gong, Zheng

    2017-01-01

    In this paper, the input-parallel output-parallel (IPOP) three-level (TL) DC/DC converters associated with the interleaving control strategy are proposed for minimizing and balancing the capacitor ripple currents. The proposed converters consist of two four-switch half-bridge three-level (HBTL) DC....../DC converters featuring with simple and compact circuit structures, which can reduce the current stresses of the components and increase the power rating of the converter. The combination of the proposed IPOP TL circuit structure and the interleaving control strategy can greatly reduce the ripple currents...... on the two input capacitor not only by doubling the frequencies of these ripple currents as the universal benefit of utilizing the interleaving control strategy but also by counteracting part of these ripple currents due to the operation principle of the proposed IPOP TL circuit structure. More importantly...

  3. A Single-Phase Multilevel Current-Source Converter using H-Bridge and DC Current Modules

    Directory of Open Access Journals (Sweden)

    Suroso Suroso

    2014-03-01

    Full Text Available This paper presents a different topology of H-bridge based multilevel current-source inverter (CSI. In this new topology, an H-bridge CSI is connected with a single or more current modules to generate a multilevel output current waveform with lower di/dt, and less distortion. Using the proposed multilevel CSI, the number of the power switching devices, and isolated gate drive circuits can be reduced. Moreover, chopper based DC current sources are presented to reduce the inductor size effectively to be in micro-Henry order, and ensure the balance of the intermediate current levels. The proposed topology is inherently able to reduce the inductor conduction losses if compared with the conventional multilevel CSIs and the H-bridge CSI. Seven-level PWM inverter configurations with non-isolated DC current sources and with a single DC power source are verified through computer simulations. Furthermore, laboratory prototypes of seven-level CSI is setup and tested. The results show that the inverter circuit works properly to generate the multilevel output current waveform with low harmonics currents, small inductors and with less conduction losses which proves feasibility of the proposed multilevel CSI. Normal 0 false false false EN-US X-NONE X-NONE

  4. An Improved Droop Control Method for DC Microgrids Based on Low Bandwidth Communication with DC Bus Voltage Restoration and Enhanced Current Sharing Accuracy

    DEFF Research Database (Denmark)

    Lu, Xiaonan; Guerrero, Josep M.; Sun, Kai;

    2014-01-01

    resistance in a droop-controlled dc microgrid, since the output voltage of each converter cannot be exactly the same, the output current sharing accuracy is degraded. Second, the DC bus voltage deviation increases with the load due to the droop action. In this paper, in order to improve the performance......, and the LBC system is only used for changing the values of the dc voltage and current. Hence, a decentralized control scheme is accomplished. The simulation test based on Matlab/Simulink and the experimental validation based on a 2×2.2 kW prototype were implemented to demonstrate the proposed approach....

  5. 1 kW, 9 kV dc-dc converter module with time-sharing control of output voltage and input current

    Energy Technology Data Exchange (ETDEWEB)

    Borgatti, R.; Stefani, R.; Bressan, O.; Bicciato, F. [F.I.A.R. Electronic Systems Group, Milan (Italy). Avionics Div.; Tenti, P.; Rossetto, L. [Univ. of Padova (Italy). Dept. of Electrical Engineering

    1993-10-01

    The paper describes a dc-dc power module based on a single-stage current-fed converter structure. Control is made according to a time-sharing strategy allowing simultaneous regulation of output voltage and input current. This solution is suitable for high-performance space and avionic applications, giving high efficiency, compactness, and accuracy, speed and robustness of control. Theoretical analysis, design criteria, and experimental results are reported. Application to radar supplies is discussed.

  6. Analysis and Simulation on Current Commutation of DC Transfer Switches in UHVDC Transmission Systems

    Institute of Scientific and Technical Information of China (English)

    PENG Chang; WEN Jialiang; MA Guohua; WANG Xiuhuan; LIU Zhigang; YU Kunshan

    2011-01-01

    The most severe working conditions of transfer switches in HVDC transmission systems identified as below: DC are For MRTB and GRTS, the most severe working condition is the failure of a single pole under operation mode. MRTB has to commutate the current from the ground return to metallic return. GRTS works in the contrary way.

  7. Monitoring DC stray current interference of steel sheet pile structures in railway environment

    NARCIS (Netherlands)

    Peelen, W.H.A.; Neeft, E.A.C.; Leegwater, G.; Kanten-Roos, W. van; Courage, W.M.G.

    2011-01-01

    Steel structures near DC powered railways are expected to be affected by stray current interference. This causes accelerated corrosion rates. Therefore steel is often not used as a building material in these cases, although certain advantages over the alternative material concrete exist. These

  8. Operation of the DC current transformer intensity monitors at FNAL during run II

    Energy Technology Data Exchange (ETDEWEB)

    Crisp, J.; Fellenz, B.; Heikkinen, D.; Ibrahim, M.A.; Meyer, T.; Vogel, G.; /Fermilab

    2012-01-01

    Circulating beam intensity measurements at FNAL are provided by five DC current transformers (DCCT), one per machine. With the exception of the DCCT in the Recycler, all DCCT systems were designed and built at FNAL. This paper presents an overview of both DCCT systems, including the sensor, the electronics, and the front-end instrumentation software, as well as their performance during Run II.

  9. Monitoring DC stray current interference of steel sheet pile structures in railway environment

    NARCIS (Netherlands)

    Peelen, W.H.A.; Neeft, E.A.C.; Leegwater, G.; Kanten-Roos, W. van; Courage, W.M.G.

    2011-01-01

    Steel structures near DC powered railways are expected to be affected by stray current interference. This causes accelerated corrosion rates. Therefore steel is often not used as a building material in these cases, although certain advantages over the alternative material concrete exist. These advan

  10. Zero-Voltage Switching PWM Strategy Based Capacitor Current-Balancing Control for Half-Bridge Three-Level DC/DC Converter

    DEFF Research Database (Denmark)

    Liu, Dong; Deng, Fujin; Zhang, Qi

    2017-01-01

    The current imbalance among the two input capacitors is one of the important issues of the half-bridge threelevel (HBTL) DC/DC converter, which would affect system performance and reliability. In this paper, a zero-voltage switching (ZVS) pulse-wide modulation (PWM) strategy including two operation...... modes is proposed. Based on the proposed ZVS PWM strategy, a capacitor current-balancing control is proposed for the HBTL DC/DC converter, where the currents on the two input capacitors can be kept balanced by alternating the two operation modes of the proposed ZVS PWM strategy. Therefore, the proposed...... control strategy can improve the performance and reliability of the converter in the aspect of balancing the thermal stresses and lifetimes among the two input capacitors. Finally, simulation and experimental studies are conducted and results verify the proposed control strategy....

  11. Polyester fabric coated with Ag/ZnO composite film by magnetron sputtering

    Science.gov (United States)

    Yuan, Xiaohong; Xu, Wenzheng; Huang, Fenglin; Chen, Dongsheng; Wei, Qufu

    2016-12-01

    Ag/ZnO composite film was successfully deposited on polyester fabric by using direct current (DC) magnetron sputtering and radio frequency (RF) magnetron reaction sputtering techniques with pure silver (Ag) and zinc (Zn) targets. X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD) were used to examine the deposited film on the fabric. It was found that the zinc film coated on Ag film before RF reactive sputtering could protect the silver film from oxidation. Anti-ultraviolet property and antistatic property of the coated samples using different magnetron sputtering methods were also investigated. The experimental results showed that Ag film was oxidized into in Ag2O film in high vacuum oxygen environment. The deposition of Zn film on the surface of the fabric coated with Ag film before RF reactive sputtering, could successfully obtained Ag/ZnO composite film, and also generated structural color on the polyester fabric.

  12. Analytical evaluation of DC capacitor RMS current and voltage ripple in neutral-point clamped inverters

    Indian Academy of Sciences (India)

    K S GOPALAKRISHNAN; SANTOSH JANAKIRAMAN; SOUMITRA DAS; G NARAYANAN

    2017-06-01

    The sizing of the DC-link capacitor in a three-level inverter is based on the RMS current flowing through it. This paper analyses the DC-link capacitor RMS current in a neutral-point clamped (NPC) inverter and expresses the same as a function of modulation index, line-side current amplitude and power factor. Analytical closed-form expressions are derived for the capacitor RMS current for single-phase half-bridge,single-phase full-bridge and three-phase three-leg topologies of a three-level inverter. The worst-case capacitor current stress is determined for each topology based on the analytical expressions. Further, analytical expressions are derived for the RMS values of low-frequency and high-frequency capacitor currents. These expressions are then used to estimate voltage ripple across the DC capacitor for sinusoidally modulated three-phase NPC inverter. The analytical expressions for the RMS current and voltage ripple are validated experimentally over a wide range of operating points.

  13. New Current Control Method of DC Power Supply for Magnetic Perturbation Coils on J-TEXT

    Institute of Scientific and Technical Information of China (English)

    ZENG Wubing; DING Yonghua; YI Bin; XU Hangyu; RAO Bo; ZHANG Ming; LIU Minghai

    2014-01-01

    In order to advance the research on suppressing tearing modes and driving plasma rotation,a DC power supply (PS) system has been developed for dynamic resonant magnetic perturbation (DRMP) coils and applied in the J-TEXT experiment.To enrich experimental phenomena in the J-TEXT tokamak,applying the circulating current four-quadrant operation mode in the DRMP DC PS system is proposed.By using the circulating current four-quadrant operation,DRMP coils can be smoothly controlled without the dead-time when the current polarity reverses.Essential circuit analysis,control optimization and simulation of desired scenarios have been performed for normal current.Relevant simulation and test results are also presented.

  14. A Theoretical Analysis of Sideband Harmonics on the Inverter DC-link Current for an Electric Railcar

    Science.gov (United States)

    Ogawa, Tomoyuki; Wakao, Shinji; Taufiq, Jat; Kondo, Keiichiro; Terauchi, Nobuo

    The harmonics of the return current may interfere with the signaling current along with the rails. In this paper, we present the theoretical studies of the return current harmonics in the inverter-controlled DC electric railcar, aiming at contributing future work to improve the compatibility with the signaling current. We theoretically derive sideband harmonics of the DC-link current. Then, in order to verify the theoretical study, we experimentally measure the harmonics and numerically simulate the harmonics. As a result, we concluded the theoretical DC-link current is enough accurate to be utilized for the future improvement of the inverter harmonics current.

  15. Pulsing frequency induced change in optical constants and dispersion energy parameters of WO{sub 3} films grown by pulsed direct current magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Punitha, K. [Department of Physics, Alagappa University, Karaikudi 630 004 (India); Sivakumar, R., E-mail: krsivakumar1979@yahoo.com [Directorate of Distance Education, Alagappa University, Karaikudi 630 004 (India); Sanjeeviraja, C. [Department of Physics, Alagappa Chettiar College of Engineering and Technology, Karaikudi 630 004 (India)

    2014-03-21

    In this work, we present the pulsing frequency induced change in the structural, optical, vibrational, and luminescence properties of tungsten oxide (WO{sub 3}) thin films deposited on microscopic glass and fluorine doped tin oxide (SnO{sub 2}:F) coated glass substrates by pulsed dc magnetron sputtering technique. The WO{sub 3} films deposited on SnO{sub 2}:F substrate belongs to monoclinic phase. The pulsing frequency has a significant influence on the preferred orientation and crystallinity of WO{sub 3} film. The maximum optical transmittance of 85% was observed for the film and the slight shift in transmission threshold towards higher wavelength region with increasing pulsing frequency revealed the systematic reduction in optical energy band gap (3.78 to 3.13 eV) of the films. The refractive index (n) of films are found to decrease (1.832 to 1.333 at 550 nm) with increasing pulsing frequency and the average value of extinction coefficient (k) is in the order of 10{sup −3}. It was observed that the dispersion data obeyed the single oscillator of the Wemple-Didomenico model, from which the dispersion energy (E{sub d}) parameters, dielectric constants, plasma frequency, oscillator strength, and oscillator energy (E{sub o}) of WO{sub 3} films were calculated and reported for the first time due to variation in pulsing frequency during deposition by pulsed dc magnetron sputtering. The E{sub o} is change between 6.30 and 3.88 eV, while the E{sub d} varies from 25.81 to 7.88 eV, with pulsing frequency. The Raman peak observed at 1095 cm{sup −1} attributes the presence of W-O symmetric stretching vibration. The slight shift in photoluminescence band is attributed to the difference in excitons transition. We have made an attempt to discuss and correlate these results with the light of possible mechanisms underlying the phenomena.

  16. Investigation of DC magnetron-sputtered TiO{sub 2} coatings: Effect of coating thickness, structure, and morphology on photocatalytic activity

    Energy Technology Data Exchange (ETDEWEB)

    Daviðsdóttir, Svava, E-mail: sdav@mek.dtu.dk [Division of Materials and Surface and Engineering, Department of Mechanical Engineering, Technical University of Denmark, DK-2800 Kgs. Lyngby (Denmark); Shabadi, Rajashekhara [Denmark d Unité Matériaux et Transformations, C6, Université Lille, 59655 Villeneuve d’Ascq (France); Galca, Aurelian Catalin [Laboratory of Multifunctional Materials and Structures, National Institute of Materials Physics, Măgurele, RO-077125 Bucharest (Romania); Andersen, Inge Hald [Danish Technological Institute, Tribology Centre, Teknologiparken, Building 18, Kongsvang All 29, DK-8000 Aarhus C (Denmark); Dirscherl, Kai [Danish Fundamental Metrology, Matematiktorvet 307, DK-2800 Kgs. Lyngby (Denmark); Ambat, Rajan [Division of Materials and Surface and Engineering, Department of Mechanical Engineering, Technical University of Denmark, DK-2800 Kgs. Lyngby (Denmark)

    2014-09-15

    The photocatalytic performance of magnetron-sputtered titanium dioxide (TiO{sub 2}) coatings of different thickness in anatase crystalline structure deposited on aluminium 1050 alloy substrates was investigated using a combination of photo-electrochemistry, methylene blue decomposition, and microscopic and spectroscopic methods, such as high resolution scanning and transmission electron microscopy, atomic force microscopy and ellipsometry. The reaction resistance was measured by AC impedance, while photocurrent measurements were carried out using the zero resistance ammetry (ZRA) method. The results showed that the TiO{sub 2} grains grow in dipyramidal columns having a linear increase in surface area with increased coating thickness. The refractive index values indicate also an evolutionary growth. The refractive index values obtained for the thin coatings on aluminium substrate were well below the values reported for monocrystalline anatase. The photocatalytic performance increased with increased coating thickness, though more rapidly over a range of 100–500 nm thickness. The dielectric constant also increased linearly with coating thickness.

  17. Novel family of quasi-Z-source DC/DC converters derived from current-fed push-pull converters

    DEFF Research Database (Denmark)

    Chub, Andrii; Husev, Oleksandr; Vinnikov, Dmitri

    2014-01-01

    This paper is devoted to the step-up quasi-Z-source dc/dc push-pull converter family. The topologies in the family are derived from the isolated boost converter family by replacing input inductors with the quasi-Z-source network. Two new topologies are proposed, analyzed and compared. Theoretical...

  18. Modelling and analysis of current-programmed ac/dc converters

    Science.gov (United States)

    Tymerski, R. P. E.; Daly, K. C.

    1985-03-01

    Current-programmed dc/dc converters operating at a fixed switching frequency are analyzed using state-space averaged modeling. For converters operating in the continuous conduction mode, general closed form expressions that describe the dynamic ac small signal characteristics of the converter are obtained. A reduced order model is used to derive the control current input-to-output voltage, audio susceptibility and output impedance small signal ac transfer functions for the ideal buck, boost, and buck-boost converters operating in the continuous conduction model. It is shown that state-space averaging can correctly predict instability on the buck converter. Current-programmed converters operating in the discontinuous conduction mode are addressed, showing that the transfer functions are represented by a finite pole and a zero at infinity. Instability is predicted for the buck converter when an external ramp is omitted and the output-to-input voltage ratio is greater than or equal to two-thirds.

  19. An Improved Distributed Secondary Control Method for DC Microgrids With Enhanced Dynamic Current Sharing Performance

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Panbao; Lu, Xiaonan; Yang, Xu; Wang, Wei; Xu, Dianguo

    2016-09-01

    This paper proposes an improved distributed secondary control scheme for dc microgrids (MGs), aiming at overcoming the drawbacks of conventional droop control method. The proposed secondary control scheme can remove the dc voltage deviation and improve the current sharing accuracy by using voltage-shifting and slope-adjusting approaches simultaneously. Meanwhile, the average value of droop coefficients is calculated, and then it is controlled by an additional controller included in the distributed secondary control layer to ensure that each droop coefficient converges at a reasonable value. Hence, by adjusting the droop coefficient, each participating converter has equal output impedance, and the accurate proportional load current sharing can be achieved with different line resistances. Furthermore, the current sharing performance in steady and transient states can be enhanced by using the proposed method. The effectiveness of the proposed method is verified by detailed experimental tests based on a 3 × 1 kW prototype with three interface converters.

  20. DSP Based Control Implementation of an AC/DC Converter with Improved Input Current Distortion

    Directory of Open Access Journals (Sweden)

    WISUTMETHEEKORN, P.

    2011-05-01

    Full Text Available This paper presents a digital signal processor based control of an AC/DC converter with nearly unity power factor. Normally, the output voltage of a single-phase AC/DC converter comprises a voltage ripple with twice line-frequency. This affects the voltage control loop and leads to the converter input current distortion. The purposed method is designed to avoid the effect of the output voltage ripple. To verify the proposed control method, MATLAB/Simulink is used for system simulation. A hardware prototype is setup. A low cost digital signal processing chip dsPIC30F4011 is employed as a digital controller to control a CUK AC/DC converter. The converter specifications are 48V output voltage and 250W output power. From the simulation and the experimental results shown that the input current distortion of the purposed system is reduced and lower than the AC/DC converter that controlled by the conventional proportional-integral controller.

  1. Electrical and mechanical performance difference on piezoelectric segmentation in a passive MEMS DC current sensor applicable to two-wire DC appliances

    Science.gov (United States)

    Yang, Xu; Fu, Yupeng; Wang, Dong F.

    2017-01-01

    As society develops in intelligence, DC is being widely used in all kinds of field in modern life, which means that a sensitive and convenient DC sensor is necessary to monitor it. Compared with other kinds of current sensor, the proposed passive MEMS DC current sensor has several significant features: power-free passive sensing, small size and low cost. In this work, the performance difference of a cantilever-based bending MEMS DC current sensor among three segmentation PZT plates was first experimentally discovered. The distribution difference of X-dir (X-direction) stress along the Y axis is confirmed through FEM analysis. An optimized structure with two slots at the root of the cantilever has been proposed to minimize the difference of average X-dir stress on an area attached to three PZT plates. A nearly linear relationship between the output voltage V output and the AC current has been obtained through both theoretical calculation and experimental verification. The sensitivity of the developed MEMS DC current sensor is 40-25 mV A-1 in the current range of 0-400 mA. It is found that there is a good consistency among the calculation, experiment and simulation results.

  2. Acoustic noise alters selective attention processes as indicated by direct current (DC) brain potential changes.

    Science.gov (United States)

    Trimmel, Karin; Schätzer, Julia; Trimmel, Michael

    2014-09-26

    Acoustic environmental noise, even of low to moderate intensity, is known to adversely affect information processing in animals and humans via attention mechanisms. In particular, facilitation and inhibition of information processing are basic functions of selective attention. Such mechanisms can be investigated by analyzing brain potentials under conditions of externally directed attention (intake of environmental information) versus internally directed attention (rejection of environmental stimuli and focusing on memory/planning processes). This study investigated brain direct current (DC) potential shifts-which are discussed to represent different states of cortical activation-of tasks that require intake and rejection of environmental information under noise. It was hypothesized that without background noise rejection tasks would show more positive DC potential changes compared to intake tasks and that under noise both kinds of tasks would show positive DC shifts as an expression of cortical inhibition caused by noise. DC potential shifts during intake and rejection tasks were analyzed at 16 standard locations in 45 persons during irrelevant speech or white noise vs. control condition. Without noise, rejection tasks were associated with more positive DC potential changes compared to intake tasks. During background noise, however, this difference disappeared and both kinds of tasks led to positive DC shifts. Results suggest-besides some limitations-that noise modulates selective attention mechanisms by switching to an environmental information processing and noise rejection mode, which could represent a suggested "attention shift". Implications for fMRI studies as well as for public health in learning and performance environments including susceptible persons are discussed.

  3. Acoustic Noise Alters Selective Attention Processes as Indicated by Direct Current (DC Brain Potential Changes

    Directory of Open Access Journals (Sweden)

    Karin Trimmel

    2014-09-01

    Full Text Available Acoustic environmental noise, even of low to moderate intensity, is known to adversely affect information processing in animals and humans via attention mechanisms. In particular, facilitation and inhibition of information processing are basic functions of selective attention. Such mechanisms can be investigated by analyzing brain potentials under conditions of externally directed attention (intake of environmental information versus internally directed attention (rejection of environmental stimuli and focusing on memory/planning processes. This study investigated brain direct current (DC potential shifts—which are discussed to represent different states of cortical activation—of tasks that require intake and rejection of environmental information under noise. It was hypothesized that without background noise rejection tasks would show more positive DC potential changes compared to intake tasks and that under noise both kinds of tasks would show positive DC shifts as an expression of cortical inhibition caused by noise. DC potential shifts during intake and rejection tasks were analyzed at 16 standard locations in 45 persons during irrelevant speech or white noise vs. control condition. Without noise, rejection tasks were associated with more positive DC potential changes compared to intake tasks. During background noise, however, this difference disappeared and both kinds of tasks led to positive DC shifts. Results suggest—besides some limitations—that noise modulates selective attention mechanisms by switching to an environmental information processing and noise rejection mode, which could represent a suggested “attention shift”. Implications for fMRI studies as well as for public health in learning and performance environments including susceptible persons are discussed.

  4. Structure and Properties of Nanocrystalline (TiZrxN1−x Thin Films Deposited by DC Unbalanced Magnetron Sputtering

    Directory of Open Access Journals (Sweden)

    Yu-Wei Lin

    2016-01-01

    Full Text Available This study aims to investigate the effects of nitrogen flow rate (0–2.5 sccm on the structure and properties of TiZrN films. Nanocrystalline TiZrN thin films were deposited on Si (001 substrates by unbalanced magnetron sputtering. The major effects of the nitrogen flow rate were on the phase, texture, N/(Ti + Zr ratio, thickness, hardness, residual stress, and resistivity of the TiZrN films. The nitrogen content played an important role in the phase transition. With increasing nitrogen flow rate, the phase changed from mixed TiZr and TiZrN phases to a single TiZrN phase. The X-ray diffraction results indicated that (111 was the preferred orientation for all TiZrN specimens. The N/(Ti + Zr ratio of the TiZrN films first increased with increasing nitrogen flow rate and then stabilized when the flow rate further increased. When the nitrogen flow rate increased from 0.4 to 1.0 sccm, the hardness and residual stress of the TiZrN thin film increased, whereas the electrical resistivity decreased. None of the properties of the TiZrN thin films changed with nitrogen flow rate above 1.0 sccm because the films contained a stable single phase (TiZrN. At high nitrogen flow rates (1.0–2.5 sccm, the average hardness and resistivity of the TiZrN thin films were approximately 36 GPa and 36.5 μΩ·cm, respectively.

  5. Effect of a Ga-doped ZnO thin film with a ZTO buffer layer fabricated by using pulsed DC magnetron sputter for dye-sensitized solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Song, Sang-Woo; Lee, Kyung-Ju; Roh, Ji-Hyung; Park, On-Jeon; Kim, Hwan-Sun; Moon, Byung-Moo [Korea University, Seoul (Korea, Republic of); Ji, Min-Woo [Yonsei University, Seoul (Korea, Republic of)

    2014-08-15

    The electrical property of a Ga-doped ZnO(GZO) thin film is well known to be similar that of commercialized fluorine-doped tin oxide(FTO). However GZO is limited for use at high process temperatures for solar cells because of its unstable resistivity at temperatures above 300 .deg. C. A GZO thin film compared to zinc tin oxide(ZTO)-GZO multilayer can be used at high process temperatures. A GZO thin film was deposited on glass by using pulsed DC magnetron sputter. Then, a ZTO buffer layer was deposited on the GZO surface. During the deposition, the working pressure was 5 mTorr (Z-1 glass) and 1 mTorr (Z-2 glass). Dye-sensitized solar cells (DSSCs) were fabricated using Z-1, Z-2 and commercialized FTO glasses. Z-2 showed a conversion efficiency of 4.265%, which was enhanced by 0.399% compared to that of the DSSCs using FTO(3.784%). The conversion efficiency for Z-1 (3.889%) was a little higher than that of FTO. Thus, the ZTO-GZO electrode showed better characteristics than those obtained using the FTO electrode, which can be attributed to the reduced charge recombination and series resistance.

  6. Preparation and Characterization of TiO2/TiN/TiO2 Multi-layer Solar Control Coatings Deposited by D.C. Reactive Magnetron Sputtering at Different Substrate Temperature

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    Transparent TiO2/TiN/TiO2 multi-layer solar control coatings were prepared on normal soda-lime-silica float glass substrate by using d.c. reactive magnetron sputtering at substrate temperature ranging from room temperature to 620℃. The dependence of optical properties of the coatings and the coating composition, on the substrate temperature was studied. The results of the optical properties show that as the substrate temperature increases, a visible transmittance as high as 65% can be obtained. When the substrate temperature is higher than 570℃, the infrared reflectance decreases. The results of X-ray photoelectron spectroscopy (XPS) show that when the substrate temperature is higher than 520℃ in oxygen atmosphere, the formation of thin surface over-layers (TiNxOy) on top of the TiN films can be observed. When the substrate temperature is at 620℃, the oxynitride become TiO2, which results in the optical degradation of TiN layer in infrared reflectance.

  7. Influence of O2 Flux on Compositions and Properties of ITO Films Deposited at Room Temperature by Direct-Current Pulse Magnetron Sputtering

    Institute of Scientific and Technical Information of China (English)

    WANG Hua-Lin; DING Wan-Yu; LIU Chao-Qian; CHAI Wei-Ping

    2010-01-01

    @@ Indium tin oxide(ITO)films were deposited on glass substrates at room temperature by dc pulse magnetron sputtering.Varying O2 flux,ITO films with different properties are obtained.Both x-ray diffractometer and x-ray photoelectron spectrometer are used to study the change of crystalline structures and bonding structures of ITO films,respectively.Electrical properties are measured by four-point probe measurements.The results indicate that the chemical structures and compositions of ITO films strongly depend on the O2 flux.With increasing O2flux,ITO films display better crystallization,which could decrease the resistivity of films.On the contrary,ITO films contain less O vacancies with increasing O2 flux,which could worsen the conductive properties of films.Without any heat treatment onto the samples,the resistivity of the ITO film could reach 6.0 × 10-4Ω·cm,with the optimai deposition parameter of 0.2 sccm O2 flux.

  8. Asymmetrical solutions and role of thermal fluctuations in dc current driven extended Josephson junction

    Energy Technology Data Exchange (ETDEWEB)

    Artemov, A.N., E-mail: artemov@fti.dn.ua [Donetsk Physical and Technology Institute, Donetsk 83114 (Ukraine)

    2012-10-01

    Extended Josephson junction driven by dc bias current is studied numerically. Two types of solutions, symmetrical and asymmetrical, are found. The current–voltage characteristic (IVC) is calculated. The symmetrical solutions form main hysteretic IVC and asymmetrical ones create an additional branch. Depending on the bias current value periodic, quasiperiodic and chaotic modes of the junction motion was observed. Dynamics of the junction affected by thermal fluctuations was analyzed. Stability of different states of the junction is discussed. -- Highlights: ► Symmetrical and asymmetrical solutions of dc driven sine-Gordon equation are found. ► Current–voltage characteristic of extended in-line Josephson junction was calculated. ► Periodic, quasiperiodic and chaotic modes of the junction motion was observed. ► Stability of dynamical junction states under thermal fluctuations is discussed.

  9. Hysteresis Current Control Based Shunt Active Power Filter for Six Pulse Ac/Dc Converter

    Directory of Open Access Journals (Sweden)

    Rakesh Kumar Pandey

    2017-02-01

    Full Text Available In this paper the simulation of Shunt Active power Filter using P-Q theory and PI controller has been presented. This SAPF compensates the harmonic currents drawn by three phase six pulse AC/DC converter. The process of compensation is done by calculating the instantaneous reactive power losses using p-q theory and the PI controller to reduce the ripple voltage of the dc capacitor of the PWM-VSI. This approach is different from conventional approach and provides very effective solution. In this simulation we use hysteresis band current controller (HCC for switching the VSI inverter. The simulation has been done for both steady state and transient conditions

  10. Design of Current Controller for Two Quadrant DC Motor Drive by Using Model Order Reduction Technique

    CERN Document Server

    Ramesh, K; Nirmalkumar, A; Gurusamy, G

    2010-01-01

    In this paper, design of current controller for a two quadrant DC motor drive was proposed with the help of model order reduction technique. The calculation of current controller gain with some approximations in the conventional design process is replaced by proposed model order reduction method. The model order reduction technique proposed in this paper gives the better controller gain value for the DC motor drive. The proposed model order reduction method is a mixed method, where the numerator polynomial of reduced order model is obtained by using stability equation method and the denominator polynomial is obtained by using some approximation technique preceded in this paper. The designed controllers responses were simulated with the help of MATLAB to show the validity of the proposed method.

  11. Carrier mobility of highly transparent conductive Al-doped ZnO polycrystalline films deposited by radio-frequency, direct-current, and radio-frequency-superimposed direct-current magnetron sputtering: Grain boundary effect and scattering in the grain bulk

    Science.gov (United States)

    Nomoto, Junichi; Makino, Hisao; Yamamoto, Tetsuya

    2015-01-01

    The effects of using radio-frequency (RF)-superimposed direct-current (DC) magnetron sputtering deposition on the structural, electrical, and optical properties of aluminum-doped ZnO (AZO)-based highly transparent conducting oxide films have been examined. AZO films were deposited on heated non-alkaline glass substrates (200 °C) using ZnO:Al2O3 (2 wt. % Al2O3) ceramic oxide targets with the total power varied from 150 to 300 W, and at various RF to DC power ratios, AZO films deposited by a mixed approach with the RF to the total power ratio of 0.14 showed the lowest resistivity of 2.47 × 10-4 Ω cm with the highest carrier concentration of 6.88 × 1020 cm-3 and the highest Hall mobility (μH) of 36.8 cm2/Vs together with the maximum value of an average transmittance in the visible spectral range from 400 to 700 nm. From the analysis of optical data based on the simple Drude model combined with the Tauc-Lorentz model and the results of Hall effect measurements, the optical mobility (μopt) was determined. A comparison of μopt with μH clarified the effects of the mixed approach not only on the reduction of the grain boundary contribution to the carrier transport but also on retaining high carrier mobility of in-grains for the AZO films.

  12. Analysis of torque-current characteristic of brushless DC motor driven by three-phase H-bridge

    Institute of Scientific and Technical Information of China (English)

    2000-01-01

    Presents the simulation and analysis of the steady state characteristic of a brushless DC motor studies the torque-current characteristic of the motor as well and discusses the design of a current-measure circuit for torque controlling.

  13. Application of bifurcation theory to current-mode controlled parallel-connected DC-DC boost converters with multi bifurcation parameters

    Energy Technology Data Exchange (ETDEWEB)

    Natsheh, Ammar N. [Faculty of Engineering, Al-Ahliyya Amman University, Post Code 19328 Amman (Jordan); Nazzal, Jamal M. [Faculty of Engineering, Al-Ahliyya Amman University, Post Code 19328 Amman (Jordan)]. E-mail: jnazzal@ammanu.edu.jo

    2007-08-15

    This work describes the bifurcational behavior of a modular peak current-mode controlled DC-DC boost converter with multi bifurcation parameters. The parallel-input/parallel-output converter consists of two identical boost circuits and operates in the continuous-current conduction mode (CCM). A nonlinear mapping in closed form is derived and bifurcation diagrams are generated using MATLAB. A comparison is made between the modular converter diagrams with those of the single boost converter. The effect of introducing mutual coupling between the inductors of the constituent modules is also addressed. Results are verified using the circuit analysis package PSPICE.

  14. Evolution of the structural and optical properties of silver oxide films with different stoichiometries deposited by direct-current magnetron reactive sputtering

    Institute of Scientific and Technical Information of China (English)

    Zhao Meng-Ke; Liang Yan; Gao Xiao-Yong; Chen Chao; Chen Xian-Mei; Zhao Xian-Wei

    2012-01-01

    Nitrogen doping of silver oxide (AgχO) film is necessary for its application in transparent conductive film and diodes because intrinsic AgχO film is a p-type semiconductor with poor conductivity.In this work,a series of AgχO films is deposited on glass substrates by direct-current magnetron reactive sputtering at different flow ratios (FRs) of nitrogen to O2.Evolutions of the structure,the reflectivity,and the transmissivity of the film are studied by X-ray diffractometry and sphectrophotometry,respectively.The specular transmissivity and the specular reflectivity of the film decreasing with FR increasing can be attributed to the evolution of the phase structure of the film.The nitrogen does not play the role of an acceptor dopant in the film deposition.

  15. Characteristics of burden resistors for high-precision DC current transducers

    CERN Document Server

    Fernqvist, G; Hudson, G; Pickering, J

    2007-01-01

    The DC current transducer (DCCT) and accompanying A/D converter determine the precision of a power converter in accelerator operation. In the LHC context this precision approaches 10-6 (1 ppm). Inside the DCCT a burden resistor is used to convert the current to an output voltage. The performance of this resistor is crucial for the accuracy, temperature behaviour, settling time and longterm drift of the DCCT. This paper reports on evaluations, a new parameter called â€ワpower coefficient” (PC) and test results from some different types of resistors available on the market.

  16. 平均电流控制下的DC/DC变换器大小信号统一动态模型%A Unified Large Signal and Small Signal Model for DC/DC Converters With Average Current Control

    Institute of Scientific and Technical Information of China (English)

    刘雁飞

    2007-01-01

    A unified large signal and small signal model for DC/DC converters under average current control is presented in the paper. The model can be applied to Buck, Boost and Buck-Boost converters. The proposed model consists of two parts. The first part is an averaged circuit model, and the second part is a model for average current mode control with pulse width modulation (PWM). The model is verified by a Boost converter prototype under average current mode control. The experimental results demonstrate that the model can accurately predict the steady-state, small signal and large signal dynamic behavior of DC/DC converter under average current control.%提出了适合平均电流控制下DC/DC开关变换器的大小信号统一模型.此模型可用于Buck、Boost和Buck-Boost变换器.它由两部份组成:一部份是开关变换器的平均电路模型;另一部分是平均电流控制器的电路模型.以平均电流控制下的Boost变换器为例,通过实验证明所提出的模型能够准确地预测平均电流控制下DC/DC变换器的稳态、小信号和大信号动态特性.

  17. Microstructure and Optical Properties of AgxO Prepared by Direct-Current Magnetron-Sputtering Method

    Institute of Scientific and Technical Information of China (English)

    GAO Xiao-Yong; LIU Xu-Wei; WANG Song-You; LIU Yu-Fen; LIN Qing-Geng; LU Jing-Xiao

    2008-01-01

    @@ Two series of Agx O films are prepared on glass substrates by de magnetron-sputtering method at room temperature and 90℃ under different oxygen to argon gas ratio (OAR) conditions. The microstructure is investigated by XRD and SEM in order to obtain the information on the component evolution of AgO+Ag2 O to Ag2O. Its optical properties are investigated by reflectance and absorption spectroscopy to extract the information on metallic and dielectric behaviour evolution of Ag2O, AgO and silver particles and the interband transition. The results indicate that the AgxO film prepared at room temperature is mainly made up of AgO and Ag2O clusters while Ag2 O is the primary component of AgxO prepared at 90℃. The AgxO film mainly consisting of the primary component shows indirect interband transition structure occurring at 2.89eV. Combination of increasing OAR and substrate temperature is an effective method to lower the threshold of thermal decomposition temperature of Agx O and to deal with the bottleneck of short-wavelength optical and magneto-opticai storage.

  18. A Current-Mode Buck DC-DC Converter with Frequency Characteristics Independent of Input and Output Voltages Using a Quadratic Compensation Slope

    Science.gov (United States)

    Sai, Toru; Sugimoto, Yasuhiro

    By using a quadratic compensation slope, a CMOS current-mode buck DC-DC converter with constant frequency characteristics over wide input and output voltage ranges has been developed. The use of a quadratic slope instead of a conventional linear slope makes both the damping factor in the transfer function and the frequency bandwidth of the current feedback loop independent of the converter's output voltage settings. When the coefficient of the quadratic slope is chosen to be dependent on the input voltage settings, the damping factor in the transfer function and the frequency bandwidth of the current feedback loop both become independent of the input voltage settings. Thus, both the input and output voltage dependences in the current feedback loop are eliminated, the frequency characteristics become constant, and the frequency bandwidth is maximized. To verify the effectiveness of a quadratic compensation slope with a coefficient that is dependent on the input voltage in a buck DC-DC converter, we fabricated a test chip using a 0.18µm high-voltage CMOS process. The evaluation results show that the frequency characteristics of both the total feedback loop and the current feedback loop are constant even when the input and output voltages are changed from 2.5V to 7V and from 0.5V to 5.6V, respectively, using a 3MHz clock.

  19. Growth of nanocrystalline TiO{sub 2} thin films and crystal anisotropy of anatase phase deposited by direct current reactive magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Sarma, Bimal K., E-mail: sarmabimal@gmail.com [Physical Sciences Division, Institute of Advanced Study in Science and Technology, Paschim Boragaon, Guwahati 781035 (India); Department of Physics, Gauhati University, Gopinath Bordoloi Nagar, Guwahati 781014 (India); Pal, Arup R.; Bailung, Heremba; Chutia, Joyanti [Physical Sciences Division, Institute of Advanced Study in Science and Technology, Paschim Boragaon, Guwahati 781035 (India)

    2013-05-15

    This work describes the growth and elastic anisotropy of nanocrystalline TiO{sub 2} films deposited by direct current reactive magnetron sputtering. The films are nanocrystalline in the gas pressure range 0.4–1.0 Pa even in the absence of substrate bias and substrate heating. It has been observed that gas pressure has a considerable effect on the phase evolution of TiO{sub 2} and at a higher pressure, nanocrystalline anatase can be produced with a greater crystallinity and dense surface. X-ray diffraction line profile analysis of anatase TiO{sub 2} has been performed and the integral breadth expressions of line broadening due to the domain size and lattice microstrain are combined on the basis of the Williamson–Hall (WH) method. The Miller indices dependence of Young's modulus is estimated on the basis of the Reuss approximation for polycrystalline aggregates. Young's modulus shows strong anisotropy. The anisotropic nature of the elastic medium has been introduced in the classical WH plot under the uniform stress deformation model (USDM) and uniform deformation energy density model (UDEDM). USDM represents the better fit of the experimental data. - Highlights: ► Growth of nanocrystalline TiO{sub 2} films prepared by reactive magnetron sputtering. ► Anatase grains grow much faster than rutile grains. ► Near band edge luminescence of TiO{sub 2} due to oxygen vacancies. ► Facile X-ray line profile analysis for nanocrystalline thin films. ► Elastic anisotropy causes X-ray diffraction line broadening of anatase TiO{sub 2}.

  20. A three-phase current-fed dc/dc converter with a three-leg high frequency transformer for fuel cells

    Energy Technology Data Exchange (ETDEWEB)

    Cha, Hanju [Department of Electrical Engineering, Chungnam National University, 220 Gung-dong Yuseong-gu, Daejeon 305-764 (Korea); Choi, Jungwan [National Fusion Research Institute, Daejeon (Korea); Enjeti, Prasad [Texas A and M University, College Station, TX 77843-3128 (United States)

    2008-07-15

    In this paper, a three-phase current-fed dc/dc converter with an active clamp is introduced, and a new three-phase three-leg high frequency transformer is proposed for the converter. The three-phase dc/dc converter transfers power through transformer leakage inductances in the discontinuous current mode; a single common active clamp branch is employed for zero-voltage switching (ZVS) in all active switches. Further, the converter's three-phase power configuration increases power transfer, and it reduces the rms current per phase, thus reduces conduction losses. Moreover, a delta-delta connection on the three-phase transformer provides parallel current paths and reduces conduction losses in the transformer windings. A three-phase transformer can be constructed by connecting three discrete single-phase transformers, but this process results in a higher volume and higher material costs. Therefore, a new three-phase three-leg high frequency transformer is designed with three discrete cores integrated into a single transformer core. The proposed transformer is analyzed according to the several operating modes of the converter, and its design rules are determined. Experimental results are obtained on a 500-W prototype unit; the design is fully verified and analyzed. (author)

  1. Introduction of a current waveform, waveshaping technique to limit conduction loss in high-frequency dc-dc converters suitable for space power

    Science.gov (United States)

    Miller, Douglas P.

    1990-06-01

    Space power supply manufacturers have tried to increase power density and construct smaller, highly efficient power supplies by increasing switching frequency. Incorporation of a power MOSFET as a switching element alleviates switching loss. However, values of R sub DS(on) (drain-to-source resistance in the on-state) for MOSFET's are of such magnitude to produce greater on-state losses than an equivalent BJT operated in saturation. This research serves to introduce a design concept, pertinent to low-voltage relatively-high-current applications, that minimizes the peak current through the switching element in order to reduce average power loss. Basic waveforms produced by different PWM and resonant mode topologies were examined. Theoretical analysis reveals that a ramp-sine current waveform could cut conduction power loss by at least 18 percent over a conventional Buck switching converter. A 14V, 14W combination quasi-resonant Buck/ZCS, Quasi-Resonant Buck dc-dc converter with an unregulated input voltage of 28 V was built for simplicity to demonstrate one particular waveshaping technique. This converter represents a useful example of an actual circuit which is capable of producing the desired ramp-sine switch-current waveform. Final results confirm improvement in conduction loss enhancing existing power MOSFET technology for use in dc-dc power conversion.

  2. Review of Magnetron Developments

    Science.gov (United States)

    Vyas, Sandeep Kumar; Verma, Rajendra Kumar; Maurya, Shivendra; Singh, V. V. P.

    2016-09-01

    Magnetrons have been the most efficient high power microwave sources for decades. In the twenty-first century, many of the development works are headed towards the performance improvement of CW industrial magnetrons. In this review article, the development works and techniques, used on different types of magnetrons, for the performance enhancement in the past two decades have been discussed. The article focuses on the state of the art of CW magnetron and the direction it will take in foreseeable future. In addition it also glimpses some of the major variants of magnetron which have further opened up scope in mm-THz spectrum of electromagnetism.

  3. An efficient magnetron transmitter for superconducting accelerators

    Science.gov (United States)

    Kazakevich, G.; Lebedev, V.; Yakovlev, V.; Pavlov, V.

    2016-12-01

    A concept of a highly-efficient high-power magnetron transmitter allowing wide-band phase and the mid-frequency power control at the frequency of the locking signal is proposed. The proposal is aimed for powering Superconducting RF (SRF) cavities of intensity-frontier accelerators. The transmitter is intended to operate with phase and amplitude control feedback loops allowing suppression of microphonics and beam loading in the SRF cavities. The concept utilizes injection-locked magnetrons controlled in phase by the locking signal supplied by a feedback system. The injection-locking signal pre-excites the magnetron and allows its operation below the critical voltage in free run. This realizes control of the magnetron power in an extended range (up to 10 dB) by control of the magnetron current. Experimental studies were carried out with 2.45 GHz, 1 kW, CW magnetrons. They demonstrated stable operation of the magnetrons and the required range of power control at a low noise level. An analysis of the kinetics of the drifting charge within the framework of the presented model of phase focusing in magnetrons substantiates the concept and the experimental results.

  4. Start Up Current Control of Buck-Boost Convertor-Fed Serial DC Motor

    Directory of Open Access Journals (Sweden)

    Yusuf SÖNMEZ

    2009-02-01

    Full Text Available Generally, DC motors are given preference for industrial applications such as electric locomotives, cranes, goods lifts. Because of they have high starting moment; they initially start with high current. This high start-up current must be decreased since it may damage windings of the motor and increases power consumption. It could be controlled by an appropriate driver system and controller. The nature of fuzzy logic control has adaptive characteristics that can achieve robust response to a system with uncertainty, parameter variation, and load disturbance. In this paper, fuzzy logic based control of start-up current of a Buck-Boost Converter fed serial DC motor is examined through computer simulation. In order to see the advantages of fuzzy logic control, classical PI control has applied to the same motor, under same circumstances and has been compared. C++ Builder software has been used for the simulation. According to the simulation results, plainly, fuzzy logic control has stronger responses than classical PI control and uses lower current at starting moment.

  5. Effect of deposition temperature on the properties of Al-doped ZnO films prepared by pulsed DC magnetron sputtering for transparent electrodes in thin-film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Doo-Soo; Park, Ji-Hyeon; Shin, Beom-Ki; Moon, Kyeong-Ju [Information and Electronic Materials Research Laboratory, Department of Materials Science and Engineering, Yonsei University, 134 Shinchon-dong, Seodaemun-gu, Seoul 120-749 (Korea, Republic of); Son, Myoungwoo [Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of); Ham, Moon-Ho [Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of); School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of); Lee, Woong [School of Nano and Advanced Materials Engineering, Changwon National University, 9 Sarim-Dong, Changwon, Gyeongnam 641-773 (Korea, Republic of); Myoung, Jae-Min, E-mail: jmmyoung@yonsei.ac.kr [Information and Electronic Materials Research Laboratory, Department of Materials Science and Engineering, Yonsei University, 134 Shinchon-dong, Seodaemun-gu, Seoul 120-749 (Korea, Republic of)

    2012-10-15

    Highlights: Black-Right-Pointing-Pointer Surface-textured AZO films were achieved by combining PDMS method with wet etching. Black-Right-Pointing-Pointer The AZO film deposited at 230 Degree-Sign C by PDMS exhibited the best performance. Black-Right-Pointing-Pointer It is due to the higher plasma density supplied from PDMS system. Black-Right-Pointing-Pointer Wet etching of the films produces a crater-like rough surface morphology. - Abstract: A simple but scalable approach to the production of surface-textured Al-doped ZnO(AZO) films for low-cost transparent electrode applications in thin-film solar cells is introduced in this study by combining pulsed dc magnetron sputtering (PDMS) with wet etching in sequence. First, structural, electrical, and optical properties of the AZO films prepared by a PDMS were investigated as functions of deposition temperature to obtain transparent electrode films that can be used as indium-free alternative to ITO electrodes. Increase in the deposition temperature to 230 Degree-Sign C accompanied the improvement in crystalline quality and doping efficiency, which enabled the lowest electrical resistivity of 4.16 Multiplication-Sign 10{sup -4} {Omega} cm with the carrier concentration of 1.65 Multiplication-Sign 10{sup 21} cm{sup -3} and Hall mobility of 11.3 cm{sup 2}/V s. The wet etching of the films in a diluted HCl solution resulted in surface roughening via the formation of crater-like structures without significant degradation in the electrical properties, which is responsible for the enhanced light scattering capability required for anti-reflective electrodes in thin film solar cells.

  6. Characteristics of ZnO: Ga thin films on flexible PEN substrate with DC magnetron sputtering%柔性PEN衬底ZnO:Ga薄膜的性能研究

    Institute of Scientific and Technical Information of China (English)

    谢轲; 蔡宏琨; 陶科; 胡居涛; 靳果; 张德贤

    2011-01-01

    以PEN柔性薄膜作为衬底,采用直流对靶磁控溅射的方法,在室温下制备ZnO:Ga薄膜。研究了不同溅射功率和不同溅射压强下制备出的薄膜表现出不同的光学和电学特性。经过溅射压强和溅射功率的优化,获得薄膜厚约900nm、电阻率为7.72×10^-4Ω·cm和可见光平均透过率超过75%的PEN衬底ZnO:Ga薄膜。将其应用于PEN透明柔性衬底非晶硅薄膜太阳电池中,得到了转换效率为6.4%的太阳电池。%In this paper, we investigate ZnO thin films on PEN DC magnetron sputtering at room tempurature. At different sputtering power values and pressures, the ZnO thin films exhibit different optical and electrical properties. Optimizing sputtering power and pressure, we find the optimal ZnO film on PEN suhstrate,whose thickness is 900 nm,resistivity is 7.72×10^-4Ω·cm,and average transmittance in the range 400-800 nm is over 75%. We use it as the surface electrode of amorphous silicon thin film solar cells and finally get flexible cells with conversion efficiency of 6.4 %.

  7. DC/RF magnetron sputter deposition and characterisation of Ca{sub 3}Si{sub 2}N{sub 2}O{sub 4}:Eu{sup 2+} luminescent thin films

    Energy Technology Data Exchange (ETDEWEB)

    Jong, Michiel de, E-mail: m.dejong-1@tudelft.nl; Enter, Victor E. van; Kolk, Erik van der

    2015-08-15

    Luminescent thin films were deposited using reactive magnetron sputtering of Ca, Si (RF) and Eu (DC) in an Ar/N{sub 2} atmosphere. A crystalline Ca{sub 3}N{sub 2}Si{sub 2}O{sub 4} phase was detected using XRD analysis. The molar ratio of Ca to Eu in the film was found to be 3:0.3. Luminescence excitation, emission and decay measurements reveal two broad bands of Eu{sup 2+} emission with local maxima around 550 nm and 630 nm under UV excitation. The measured luminescence is characteristic for Eu{sup 2+} emission in reported Ca{sub 3}Si{sub 2}N{sub 2}O{sub 4} phosphors. This was confirmed with time-resolved luminescence decay measurements that show a two component luminescence decay spectrum characterised by time constants of 0.13 μs and 0.56 μs. EDS measurements showed a metal-to-Si ratio of 3:2.4, metal-to-N ratio of 3:1.5 and a metal-to-O ratio of 3:5.1, where (Ca+Eu) is the metal fraction. The overestimation of Si and O and the underestimation of N is caused by the presence of a crystalline, non-luminescent oxide phase. This was confirmed with XRD, where a weak Ca{sub 2}SiO{sub 4} signal was observed. - Highlights: • A thin film of nitridated Ca, Si and Eu was obtained by reactive sputtering in N{sub 2}/Ar. • By performing rapid thermal anneal, a luminescent calcium silicon oxynitride is formed. • Broad band orange Eu{sup 2+} emission was observed under UV excitation.

  8. Mechanical properties, chemical analysis and evaluation of antimicrobial response of Si-DLC coatings fabricated on AISI 316 LVM substrate by a multi-target DC-RF magnetron sputtering method for potential biomedical applications

    Science.gov (United States)

    Bociaga, Dorota; Sobczyk-Guzenda, Anna; Szymanski, Witold; Jedrzejczak, Anna; Jastrzebska, Aleksandra; Olejnik, Anna; Jastrzebski, Krzysztof

    2017-09-01

    In this study silicon doped diamond-like carbon (Si-DLC) coatings were synthesized on two substrates: silicon and AISI 316LVM stainless steel using a multi-target DC-RF magnetron sputtering method. The Si content in the films ranged between 4 and 16 at.%, and was controlled by the electrical power applied in RF regime to Si cathode target. The character of the chemical bonds was revealed by FTIR analysis. With the addition of silicon the hydroxyl absorption (band in the range of 3200-3600 cm-1) increased what suggests more hydrophilic character of the coating. There were also observed significant changes in bonding of Si atoms. For low content of dopant, Si-O-Si bond system is predominant, while for the highest content of silicon there is an evidence of the shift to Si-C bonds in close proximity to methyl groups. The Raman spectroscopy revealed that the G peak position is shifted to a lower wavenumber and the ID/IG ratio decreased with increasing Si content, which indicates an increase in the C-sp3 content. Regardless of the coatings' composition, the improvement of hardness in comparison to pure substrate material (AISI 316 LVM) was observed. Although the reduction of the level of hardness from the level of 10.8 GPa for pure DLC to about 9.4 GPa for the silicon doped coatings was observed, the concomitant improvement of films adhesion with higher amount of Si was revealed. Although incorporation of the dopant to DLC coatings increases the number of E. coli cells which adhered to the examined surfaces, the microbial colonisation remains on the level of substrate material. The presented results prove the potential of Si-DLC coatings in biomedical applications from the point of view of their mechanical properties.

  9. Investigation of Structural, Compositional and Anti-Microbial Properties of Copper Thin Film Using Direct Current Magnetron Sputtering for Surgical Instruments

    Science.gov (United States)

    Kalaiselvam, S.; Sandhya, J.; Krishnan, K. V. Hari; Kedharnath, A.; Arulkumar, G.; Roseline, A. Ameelia

    Surgical instruments and other bioimplant devices, owing to their importance in the biomedical industry require high biocompatibility to be used in the human body. Nevertheless, issues of compatibility, bacterial infections are quite common in such devices. Hence development of surface coatings on various substrates for implant applications is a promising technique to combat the issues arising in these implant materials. The present investigation aims at coating copper on stainless steel substrate using DC Magnetron sputtering which is used to achieve film of required thickness (0.5-8μm). The deposition pressure, substrate temperature, power supply, distance between the specimen and target are optimized and maintained constant, while the sputtering time (30-110min) is varied. The sputtered copper thin film’s morphology, composition are characterized by SEM and EDAX. X-ray diffraction analysis shows copper oriented on (111) and (002) and copper oxide on (111) planes. The contact angle of copper thin film is 92∘ while AISI 316L shows 73∘. The antimicrobial studies carried in Staphylococcus aureus, Escherichia Coli, Klebsiella pneumonia and Candida albicans show that the maximum reduction was seen upto 35, 26, 54, 39CFU/mL, respectively after 24h. The cell viability is studied by MTT assay test on Vero cell line for 24h, 48h and 72h and average cell viability is 43.85%. The copper release from the thin film to the culture medium is 6691μg/L (maximum) is estimated from AAS studies. The copper coated substrate does not show much reaction with living Vero cells whereas the bacteria and fungi are found to be destroyed.

  10. Analysis of Three-Phase Rectifier Systems with Controlled DC-Link Current Under Unbalanced Grids

    DEFF Research Database (Denmark)

    Kumar, Dinesh; Davari, Pooya; Zare, Firuz

    2017-01-01

    Voltage unbalance is the most common disturbance in distribution networks, which give undesirable effects on many grid connected power electronics systems including Adjustable Speed Drive (ASD). Severe voltage unbalance can force three-phase rectifiers into almost single-phase operation, which...... degrades the grid power quality and also imposes a significant negative impact on the ASD system. This major power quality issue affecting the conventional rectifiers can be attenuated by controlling the DC-link current based on an Electronic Inductor (EI) technique. The purpose of this digest...

  11. IR emission from the target during plasma magnetron sputter deposition

    Energy Technology Data Exchange (ETDEWEB)

    Cormier, P.-A. [GREMI, Université d' Orléans, 14 rue d' Issoudun, B.P. 6744, 45067 Orleans Cedex2 (France); Thomann, A.-L., E-mail: anne-lise.thomann@univ-orleans.fr [GREMI, Université d' Orléans, 14 rue d' Issoudun, B.P. 6744, 45067 Orleans Cedex2 (France); Dolique, V. [LMA, Université Claude Bernard Lyon I 7 Avenue Pierre de Coubertin, 69622 Villeurbanne Cedex (France); Balhamri, A. [ChIPS, Université de Mons, 20 Place du Parc, 7000 Mons (Belgium); Université Hassan 1, École Supérieure de Technologie, 218 Berrechid (Morocco); Dussart, R.; Semmar, N.; Lecas, T.; Brault, P. [GREMI, Université d' Orléans, 14 rue d' Issoudun, B.P. 6744, 45067 Orleans Cedex2 (France); Snyders, R. [ChIPS, Université de Mons, 20 Place du Parc, 7000 Mons (Belgium); Materia Nova R and D Center, Avenue Corpernic 1, Mons (Belgium); Konstantinidis, S. [Materia Nova R and D Center, Avenue Corpernic 1, Mons (Belgium)

    2013-10-31

    In this article, energy flux measurements at the substrate location are reported. In particular, the energy flux related to IR radiation emanating from the titanium (10 cm in diam.) target surface is quantified during magnetron sputter deposition processes. In order to modulate the plasma–target surface interaction and the radiative energy flux thereof, the working conditions were varied systematically. The experiments were performed in balanced and unbalanced magnetic field configurations with direct current (DC), pulsed DC and high power impulse magnetron sputtering (HiPIMS) discharges. The power delivered to the plasma was varied too, typically from 100 to 800 W. Our data show that the IR contribution to the total energy flux at the substrate increases with the supplied sputter power and as the discharge is driven in a pulse regime. In the case of HiPIMS discharge generated with a balanced magnetic field, the energy flux associated to the IR radiation produced by the target becomes comparable to the energy flux originating from collisional processes (interaction of plasma particles such as ions, electron, sputtered atoms etc. with the substrate). From IR contribution, it was possible to estimate the rise of the target surface temperature during the sputtering process. Typical values found for a titanium target are in the range 210 °C to 870 °C. - Highlights: • During magnetron sputtering process the heated target emits IR radiation. • We follow in real time the energy transferred to the deposited film by IR radiation. • IR radiation can be the main energy contribution in balanced pulsed processes. • IR radiation might affect the deposition process and the final film properties.

  12. DC-current induced magneto-oscillations in very high-mobility 2D electron gas

    Science.gov (United States)

    Yang, C. L.; Zhang, Chi; Du, R. R.; Pfeiffer, L. N.; West, K. W.

    2007-03-01

    We report on a systematic experimental study of DC-current induced magneto-oscillations [1] using Hall bar samples of very high-mobility (8-20 x 10^6 cm^2/Vs) GaAs/AlxGa1-xAs heterostructures. Previously we show that remarkable nonlinear resistance and 1/B oscillations can arise when a high bias current (Ix) is passed through a Hall bar (width w), and the effect can be explained by a Zener tunneling model in the presence of a tilting Hall field [1]. Data of resistance Rxx≡Vx/Ix, differential resistance rxx≡Vx/Ix, and rxx'≡rxx/Ix in higher mobility samples, which show higher order oscillations, have confirmed the validity of this model. Our temperature dependent date show that this effect can persist to kBT>φc, where φc is the cyclotron energy. [1] Yang et al, Phys. Rev. Lett. 89, 076801 (2002).

  13. STATISTIC, PROBABILISTIC, CORRELATION AND SPECTRAL ANALYSES OF REGENERATIVE BRAKING CURRENT OF DC ELECTRIC ROLLING STOCK

    Directory of Open Access Journals (Sweden)

    A. V. Nikitenko

    2014-04-01

    Full Text Available Purpose. Defining and analysis of the probabilistic and spectral characteristics of random current in regenerative braking mode of DC electric rolling stock are observed in this paper. Methodology. The elements and methods of the probability theory (particularly the theory of stationary and non-stationary processes and methods of the sampling theory are used for processing of the regenerated current data arrays by PC. Findings. The regenerated current records are obtained from the locomotives and trains in Ukraine railways and trams in Poland. It was established that the current has uninterrupted and the jumping variations in time (especially in trams. For the random current in the regenerative braking mode the functions of mathematical expectation, dispersion and standard deviation are calculated. Histograms, probabilistic characteristics and correlation functions are calculated and plotted down for this current too. It was established that the current of the regenerative braking mode can be considered like the stationary and non-ergodic process. The spectral analysis of these records and “tail part” of the correlation function found weak periodical (or low-frequency components which are known like an interharmonic. Originality. Firstly, the theory of non-stationary random processes was adapted for the analysis of the recuperated current which has uninterrupted and the jumping variations in time. Secondly, the presence of interharmonics in the stochastic process of regenerated current was defined for the first time. And finally, the patterns of temporal changes of the correlation current function are defined too. This allows to reasonably apply the correlation functions method in the identification of the electric traction system devices. Practical value. The results of probabilistic and statistic analysis of the recuperated current allow to estimate the quality of recovered energy and energy quality indices of electric rolling stock in the

  14. Influence of DC arc current on the formation of cobalt-based nanostructures

    Indian Academy of Sciences (India)

    P B ORPE; C BALASUBRAMANIAN; S MUKHERJEE

    2017-08-01

    The synthesis of cobalt-based magnetic nanostructures using DC arc discharge technique with varying arc current is reported here. The structural, morphological, compositional and magnetic properties of thesenanostructures were studied as a function of applied arc current. Various techniques like X-ray diffraction, transmission electron microscopy, EDAX and vibrating sample magnetometry were used to carry out this studyand the results are reported here. The results clearly indicate that for a given oxygen partial pressure, an arc current of 100A favours the formation of unreacted cobalt atomic species. Also change in arc current leads to variationin phase, diversity in morphology etc. Other property changes such as thermal changes, mechanical changes etc. are not addressed here. The magnetic characterization further indicates that the anisotropy in shape plays a crucial role in deciding the magnetic properties of the nanostructured materials.We have quantified an interesting result in our experiment, that is, for a given partial pressure, 100A arc current results in unique variation in structural and magnetic properties as compared to other arc currents.

  15. The existence of a double S-shaped process curve during reactive magnetron sputtering

    Science.gov (United States)

    Schelfhout, R.; Strijckmans, K.; Depla, D.

    2016-09-01

    The four dimensional parameter space (discharge voltage and current and reactive gas flow and pressure) related to a reactive Ar/O2 DC magnetron discharge with an aluminum target and constant pumping speed was acquired by measuring current-voltage characteristics at different oxygen flows. The projection onto the pressure-flow plane allows us to study the well-known S-shaped process curve. This experimental procedure guarantees no time dependent effects on the result. The obtained process curve appears not to be unique but rather two significantly different S-shaped curves are noticed which depend on the history of the steady state target condition. As such, this result has not only an important impact on the fundamental description of the reactive sputtering process but it can also have its consequences on typical feedback control systems for the operation in the transition regime of the hysteresis during reactive magnetron sputtering.

  16. The n-type conduction of indium-doped Cu{sub 2}O thin films fabricated by direct current magnetron co-sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Cai, Xing-Min; Su, Xiao-Qiang; Ye, Fan, E-mail: yefan@szu.edu.cn; Wang, Huan; Tian, Xiao-Qing; Zhang, Dong-Ping; Fan, Ping; Luo, Jing-Ting; Zheng, Zhuang-Hao; Liang, Guang-Xing [Institute of Thin Film Physics and Applications, School of Physical Science and Technology and Shenzhen Key Laboratory of Sensor Technology, Shenzhen University, Shenzhen 518060 (China); Roy, V. A. L. [Center of Super-Diamond and Advanced Films (COSDAF) and Department of Physics and Materials Science, City University of Hong Kong, Kowloon Tong, Hong Kong (China)

    2015-08-24

    Indium-doped Cu{sub 2}O thin films were fabricated on K9 glass substrates by direct current magnetron co-sputtering in an atmosphere of Ar and O{sub 2}. Metallic copper and indium disks were used as the targets. X-ray diffraction showed that the diffraction peaks could only be indexed to simple cubic Cu{sub 2}O, with no other phases detected. Indium atoms exist as In{sup 3+} in Cu{sub 2}O. Ultraviolet-visible spectroscopy showed that the transmittance of the samples was relatively high and that indium doping increased the optical band gaps. The Hall effect measurement showed that the samples were n-type semiconductors at room temperature. The Seebeck effect test showed that the films were n-type semiconductors near or over room temperature (<400 K), changing to p-type at relatively high temperatures. The conduction by the samples in the temperature range of the n-type was due to thermal band conduction and the donor energy level was estimated to be 620.2–713.8 meV below the conduction band. The theoretical calculation showed that indium doping can raise the Fermi energy level of Cu{sub 2}O and, therefore, lead to n-type conduction.

  17. Space Vector Modulation for DC-Link Current Ripple Reduction in Back-To-Back Current Source Converters for Microgrid Applications

    DEFF Research Database (Denmark)

    Guo, Xiaoqiang; Xu, David; Guerrero, Josep M.

    2015-01-01

    instability. Conventionally, with a given switching frequency and rated voltage, the current ripple can be reduced by increasing the dc-link inductor, but it leads to bulky size, high cost and slow dynamic response. In order to solve this problem, this paper reveals that the current ripple can......Back-to-back converters have been typically used to interconnect the microgrids. For a back-to-back current source converter, the dc-link current ripple is one of the important parameters. A large ripple will cause the electromagnetic interference, undesirable high-frequency losses, and system...

  18. A high power impulse magnetron sputtering model to explain high deposition rate magnetic field configurations

    Science.gov (United States)

    Raman, Priya; Weberski, Justin; Cheng, Matthew; Shchelkanov, Ivan; Ruzic, David N.

    2016-10-01

    High Power Impulse Magnetron Sputtering (HiPIMS) is one of the recent developments in the field of magnetron sputtering technology that is capable of producing high performance, high quality thin films. Commercial implementation of HiPIMS technology has been a huge challenge due to its lower deposition rates compared to direct current Magnetron Sputtering. The cylindrically symmetric "TriPack" magnet pack for a 10 cm sputter magnetron that was developed at the Center for Plasma Material Interactions was able to produce higher deposition rates in HiPIMS compared to conventional pack HiPIMS for the same average power. The "TriPack" magnet pack in HiPIMS produces superior substrate uniformity without the need of substrate rotation in addition to producing higher metal ion fraction to the substrate when compared to the conventional pack HiPIMS [Raman et al., Surf. Coat. Technol. 293, 10 (2016)]. The films that are deposited using the "TriPack" magnet pack have much smaller grains compared to conventional pack DC and HiPIMS films. In this paper, the reasons behind the observed increase in HiPIMS deposition rates from the TriPack magnet pack along with a modified particle flux model is discussed.

  19. Design and control of the phase current of a brushless dc motor to eliminate cogging torque

    Science.gov (United States)

    Jang, G. H.; Lee, C. J.

    2006-04-01

    This paper presents a design and control method of the phase current to reduce the torque ripple of a brushless dc (BLDC) motor by eliminating cogging torque. The cogging torque is the main source of torque ripple and consequently of speed error, and it is also the excitation source to generate the vibration and noise of a motor. This research proposes a modified current wave form, which is composed of main and auxiliary currents. The former is the conventional current to generate the commutating torque. The latter generates the torque with the same magnitude and opposite sign of the corresponding cogging torque at the given position in order to eliminate the cogging torque. Time-stepping finite element method simulation considering pulse-width-modulation switching method has been performed to verify the effectiveness of the proposed method, and it shows that this proposed method reduces torque ripple by 36%. A digital-signal-processor-based controller is also developed to implement the proposed method, and it shows that this proposed method reduces the speed ripple significantly.

  20. Modeling and Dynamic Analysis of Paralleled dc/dc Converters With Master-Slave Current Sharing Control

    Science.gov (United States)

    Rajagopalan, J.; Xing, K.; Guo, Y.; Lee, F. C.; Manners, Bruce

    1996-01-01

    A simple, application-oriented, transfer function model of paralleled converters employing Master-Slave Current-sharing (MSC) control is developed. Dynamically, the Master converter retains its original design characteristics; all the Slave converters are forced to depart significantly from their original design characteristics into current-controlled current sources. Five distinct loop gains to assess system stability and performance are identified and their physical significance is described. A design methodology for the current share compensator is presented. The effect of this current sharing scheme on 'system output impedance' is analyzed.

  1. Modeling and Dynamic Analysis of Paralleled of dc/dc Converters with Master-Slave Current Sharing Control

    Science.gov (United States)

    Rajagopalan, J.; Xing, K.; Guo, Y.; Lee, F. C.; Manners, Bruce

    1996-01-01

    A simple, application-oriented, transfer function model of paralleled converters employing Master-Slave Current-sharing (MSC) control is developed. Dynamically, the Master converter retains its original design characteristics; all the Slave converters are forced to depart significantly from their original design characteristics into current-controlled current sources. Five distinct loop gains to assess system stability and performance are identified and their physical significance is described. A design methodology for the current share compensator is presented. The effect of this current sharing scheme on 'system output impedance' is analyzed.

  2. ELECTRICAL PROPERTIES OF DC REACTIVE MAGNETRON ...

    African Journals Online (AJOL)

    Mgina

    Films optical spectra were fitted with the Drude model to determine their charge carrier ... The use of aluminium doped zinc oxide ... They sputtered ZnO and Al2O3 .... Figure 1(c): The simulated and measured spectrum for the composite film ...

  3. De virtuele magnetron

    NARCIS (Netherlands)

    Luitjes, H.; Vollebregt, M.; Canters, R.

    2004-01-01

    De virtuele magnetron is computersoftware die de magentron nabootst. De virutele magnetron vereenvoudigt het ontwerpen van verpakkingen voor magnetronmaaltijden en is een hulpmiddel om het opwarmen van de diverse maaltijdcomponenten zodanig te verbeteren dat er minder koude en warme plaatsen in het

  4. De virtuele magnetron

    NARCIS (Netherlands)

    Luitjes, H.; Vollebregt, M.; Canters, R.

    2004-01-01

    De virtuele magnetron is computersoftware die de magentron nabootst. De virutele magnetron vereenvoudigt het ontwerpen van verpakkingen voor magnetronmaaltijden en is een hulpmiddel om het opwarmen van de diverse maaltijdcomponenten zodanig te verbeteren dat er minder koude en warme plaatsen in het

  5. Switching performance and efficiency investigation of GaN based DC-DC Buck converter for low voltage and high current applications

    Science.gov (United States)

    Alatawi, Khaled; Almasoudi, Fahad; Matin, Mohammad

    2016-09-01

    The Wide band-gap (WBG) materials "such as Silicon Carbide (SiC) and Gallium nitride (GaN)" based power switching devices provide higher performance capabilities compared to Si-based power switching devices. The wide band-gap materials based power switching devices outperform Si-based devices in many performance characteristics such as: low witching loss, low conduction loss, high switching frequencies, and high operation temperature. GaN based switching devices benefit a lot of applications such as: future electric vehicles and solar power inverters. In this paper, a DC-DC Buck converter based on GaN FET for low voltage and high current applications is designed and investigated. The converter is designed for stepping down a voltage of 48V to 12V with high switching frequency. The capability of the GaN FET based buck converter is studied and compared to equivalent SiC MOSFET and Si-based MOSFET buck converters. The analysis of switching losses and efficiency was performed to compare the performance capabilities of GaN FET, SiC MOSFET and Si-based MOSFET. The results showed that the overall switching losses of GaN FET are lower than that of SiC and Si-based power switching devices. Also, the performance capability of GaN devices with higher frequencies is studied. GaN devices with high frequencies will reduce the total size and the cost of the power converter. In Addition, the overall efficiency of the DC-DC Buck converter is higher with the GaN FET switching devices, which make it more suitable for low voltage and high current applications.

  6. Design and development of DC high current sensor using Hall-Effect method

    Science.gov (United States)

    Dewi, Sasti Dwi Tungga; Panatarani, C.; Joni, I. Made

    2016-02-01

    This paper report a newly developed high DC current sensor by using a Hall effect method and also the measurement system. The Hall effect sensor receive the magnetic field generated by a current carrying conductor wire. The SS49E (Honeywell) magnetoresistive sensor was employed to sense the magnetic field from the field concentrator. The voltage received from SS49E then converted into digital by using analog to digital converter (ADC-10 bit). The digital data then processed in the microcontroller to be displayed as the value of the electric current in the LCD display. In addition the measurement was interfaced into Personal Computer (PC) using the communication protocols of RS232 which was finally displayed in real-time graphical form on the PC display. The performance test on the range ± 40 Ampere showed that the maximum relative error is 5.26%. It is concluded that the sensors and the measurement system worked properly according to the design with acceptable accuracy.

  7. Interleaved soft-switched active-clamped L-L type current-fed half-bridge DC-DC converter for fuel cell applications

    Energy Technology Data Exchange (ETDEWEB)

    Rathore, Akshay K. [Electrical Machines and Drives Research Lab, University of Wuppertal, Rainer Gruenter Str. 21, University Campus Freudenberg, 42119 Wuppertal, NRW (Germany)

    2009-12-15

    In this paper, an interleaved soft-switched active-clamped L-L type current-fed half-bridge isolated dc-dc converter has been proposed. The L-L type active-clamped current-fed converter is able to maintain zero-voltage switching (ZVS) of all switches for the complete operating range of wide fuel cell stack voltage variation at full load down to light load conditions. Active-clamped circuit absorbs the turn-off voltage spike across the switches. Half-bridge topology maintains higher efficiency due to lower conduction losses. Soft-switching permits higher switching frequency operation, reducing the size, weight and cost of the magnetic components. Interleaving of the two isolated converters is done using parallel input series output approach and phase-shifted modulation is adopted. It reduces the input current ripple at the fuel cell input, which is required in a fuel cell system and also reduces the output voltage ripples. In addition, the size of the magnetic/passive components, current rating of the switches and voltage ratings of the rectifier diodes are reduced. (author)

  8. Vortex domain structures and dc current dependence of magneto-resistances in magnetic tunnel junctions

    Institute of Scientific and Technical Information of China (English)

    Wei Hong-Xiang; Lu Qing-Feng; Zhao Su-Fen; Zhang Xie-Qun; Feng Jia-Feng; Han Xiu-Feng

    2004-01-01

    Microfabrication and the magneto-transport characteristics of the magnetic tunnel junctions (MTJs) with a spin-valve-type structure of Ta (5nm)/Ni7gFe21 (25nm)/Ir22Mn78 (12nm)/Co75Fe25 (4nm)/Al(0.8nm) oxide/Co75Fe25(4nm)/Ni7gFe21 (20nm)/Ta(5nm) were investigated in this paper. A series of experimental data measured with a MTJ was used to verify a magnon-assisted tunnelling model and theory. Furthermore, a micromagnetics simulation shows that the butterfly-like vortex domain structures can be formed under a current-induced Oersted field, which decreases the net magnetization values of the ferromagnetic electrodes under a large dc current (i.e., in high voltage regimes). It is one of the main reasons for the tunnel magnetoresistance ratios to decrease significantly at high voltage biasing.

  9. Studies on the reactive deposition of TiN{sub x} and TiO{sub x} in a DC magnetron plasma; Untersuchungen zur reaktiven Abscheidung von TiN{sub x} und TiO{sub x} in einem DC-Magnetronplasma

    Energy Technology Data Exchange (ETDEWEB)

    Wrehde, Stefan

    2009-10-30

    In the present thesis experiments in a magnetron coating plasma on the (reactive) deposition of Ti, Ti{sub x}, and TiO{sub x} layers were performed. The aim was to meet by correlation of measurements of the ion and energy current on the substrate during the coating procedure with studies of the properties of the deposed layers statements about the connections of deposition conditions and layer properties. The layers deposed in the argon plasma without reactive gas contained beside titanium as main component also small concentrations of oxygen in the range of 8..15%, no completely pure respectively metallic titanium layers could be deposed. In the layers deposed in the argon-nitrogen plasma the increasing nitrogen admixture to the plasma leads mto an increasing nitridation of the layers. The measurements of the crystal structure show higher macroscopical stresses in the layers deposed in the unbalanced mode. From the combination of the higher thicknesses and densities of the layers deposed in the unbalanced mode in this operation mode of the magnetron higher deposition rates result. In the argon-oxygen plasma at increasing oxygen part it comes to a distinct increasement of the oxygen concentration at simultaneous decreasement of the relative titanium concentration in the deposed layers. The deposition in the unbalanced mode leads against the that in the balanced mode to a slightly lower oxygen concentration in the layers. The measurements of the crystal structure show also a lower oxygen insertion and tendentially lower macroscopical stresses in the layers deposed in the unbalanced mode. The measured densities of the layers deposed in the unbalanced mode are distinctly lower than to be expected, and above all smaller than those of the layers deposed in the balanced mode.

  10. Structural investigation of direct current magnetron sputtered Ti/NiV/Ag layers on n{sup +}Si substrate

    Energy Technology Data Exchange (ETDEWEB)

    Resnik, D. [Laboratory of Microsensor Structures and Electronics, Faculty of Electrical Engineering, University of Ljubljana, Trzaska 25, Ljubljana 1000 (Slovenia)], E-mail: drago.resnik@fe.uni-lj.si; Kovac, J. [Jozef Stefan Institute, Jamova 36, Ljubljana 1000 (Slovenia); Vrtacnik, D.; Amon, S. [Laboratory of Microsensor Structures and Electronics, Faculty of Electrical Engineering, University of Ljubljana, Trzaska 25, Ljubljana 1000 (Slovenia)

    2008-09-01

    Direct current sputtered Ti/NiV/Ag thin film metallization scheme on n{sup +}Si substrate was studied to reveal the nature of interface structure and adhesion related mechanisms. Ti/NiV/Ag scheme is usually applied when solderable backside contact is required. When thermal annealing of this sputtered metallic stack is performed below 550 deg. C, delamination frequently occurs. By energy dispersive X-ray spectroscopy analysis the delaminating interface was found to be between Si and Ti layer. Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS) depth profile analyses through metallic stack/Si substrate on samples exhibiting poor adhesion showed that a very thin amorphous Ti-Si phase was grown at Ti/Si interface when annealed at 400 deg. C. The XPS analyses of peeled layer and the surface of remained Si substrate after adhesion failure show that the delamination occurs between Si-substrate and amorphous Ti-Si layer. No contamination at Ti/Si interface was found as a possible origin for adhesion degradation. AES depth profiling of samples having good adhesion and annealed at 550 deg. C, revealed the formation of Ti-silicide and Ni-silicide at metal layers/Si interface, which in combination with Ni-Ti compound formed above this interface promote the adhesion.

  11. Experimental investigation of the effect of titanium dioxide and barium titanate additives on DC transient currents in low density polyethylene

    DEFF Research Database (Denmark)

    Khalil, M.S; Henk, Peter O; Henriksen, Mogens

    1988-01-01

    The effect of titanium dioxide as a semiconductive additive and barium titanate as a highly polar additive on the DC transient currents in low-density polyethylene is investigated. Experiments were made using thick specimens under a high electric field (>25×106 V/m) and a constant temperature of 40...

  12. DC current and AC impedance measurements on boron-doped single crystalline diamond films

    Energy Technology Data Exchange (ETDEWEB)

    Ye, Haitao; Gaudin, O.; Jackman, R.B. [Department of Electronic and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE (United Kingdom); Muret, P.; Gheeraert, E. [Laboratoire d' Etudes des Proprietes Electroniques des Solides, BP166, 38042 Grenoble Cedex 9 (France)

    2003-09-01

    In this paper, we report the first measurement of impedance on boron-doped single crystalline diamond films from 0.1 Hz to 10 MHz with the temperature ranging from -100 C up to 300 C. The Cole-Cole (Z' via Z{sup ''}) plots are well fitted to a RC parallel circuit model and the equivalent Resistance and Capacitance for the diamond films have been estimated using the Zview curve fitting. The results show only one single semicircle response at each temperature measured. It was found that the resistance decreases from 70 G{omega} at -100 C to 5 k{omega} at 300 C. The linear curve fitting from -100 C to 150 C shows the sample has an activation energy of 0.37 eV, which is consistent with the theoretical value published of this kind of material. The equivalent capacitance is maintained at the level of pF up to 300 C suggesting that no grain boundaries are being involved, as expected from a single crystal diamond. The activation energy from the dc current-temperature curves is 0.36 eV, which is consistent with the value from ac impedance. The potential of this under-used technique for diamond film analysis will be discussed. (copyright 2003 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  13. Chemical Structure of Carbon Nitride Films Prepared by MW-ECR Plasma Enhanced Magnetron Sputtering

    Institute of Scientific and Technical Information of China (English)

    XUJun,GAOPeng; DINGWan-yu; LIXin; DENGXin-lu; DONGChuang

    2004-01-01

    Amorphous carbon nitride thin films were prepared by plasma-enhanced DC magnetron sputtering using twinned microwave electron cyclotron resonance plasma sources. Chemical structure of deposited films was investigated using X-ray photoelectron spectroscopy and Fourier transtorm infrared spectroscopy. The results indicate that the deposition rate is strongly affected by direct current bias, and the films are mainly composed of a single amorphous carbon nitride phase with N/C ratio close to C3N4, and the bonding is predominantly of C-N type.

  14. Deposition of thin titanium-copper films with antimicrobial effect by advanced magnetron sputtering methods

    Energy Technology Data Exchange (ETDEWEB)

    Stranak, V., E-mail: stranak@physik.uni-greifswald.de [University of Greifswald, Institute of Physics, Felix-Hausdorff Str. 6, 17489 Greifswald (Germany); Wulff, H. [University of Greifswald, Institute of Physics, Felix-Hausdorff Str. 6, 17489 Greifswald (Germany); Rebl, H. [University of Rostock, Biomedical Res. Center, Dept. of Cell Biology, Schillingallee 69, 18057 Rostock (Germany); Zietz, C. [University of Rostock, Dept. of Orthopaedics, Doberaner Str. 142, 18057 Rostock (Germany); Arndt, K. [University of Rostock, Dept. of Med. Microbiol., Virology and Hygiene, Schillingallee 70, 18057 Rostock (Germany); Bogdanowicz, R. [University of Greifswald, Institute of Physics, Felix-Hausdorff Str. 6, 17489 Greifswald (Germany); Nebe, B. [University of Rostock, Biomedical Res. Center, Dept. of Cell Biology, Schillingallee 69, 18057 Rostock (Germany); Bader, R. [University of Rostock, Dept. of Orthopaedics, Doberaner Str. 142, 18057 Rostock (Germany); Podbielski, A. [University of Rostock, Dept. of Med. Microbiol., Virology and Hygiene, Schillingallee 70, 18057 Rostock (Germany); Hubicka, Z. [Academy of Sciences of the Czech Republic, Institute of Physics, Na Slovance 2, 180 00 Prague (Czech Republic); Hippler, R. [University of Greifswald, Institute of Physics, Felix-Hausdorff Str. 6, 17489 Greifswald (Germany)

    2011-10-10

    The antibacterial effect of thin titanium-copper (Ti-Cu) films combined with sufficient growth of human osteoblastic cells is reported in the paper. Thin Ti-Cu films were prepared by three different plasma-assisted magnetron sputtering methods: direct current magnetron sputtering (dc-MS), dual magnetron sputtering (dual-MS) as well as dual high power impulse magnetron sputtering (dual-HiPIMS). The antimicrobial effect is caused by copper released from the metallic Ti-Cu films, which was measured by atomic absorption spectroscopy (AAS). The copper release is influenced by the chemical and physical properties of the deposited films and was investigated by X-ray diffractometry and X-ray reflectometry (GIXD and XR) techniques. It was found that, within the first 24 h the amount of Cu released from dual-HiPIMS films (about 250 {mu}g) was much higher than from dc-MS and dual-MS films. In vitro planktonic growth tests on Ti-Cu surfaces for Staphylococcus epidermidis and S. aureus demonstrated the killing of both bacteria using the Ti-Cu films prepared using the dual-HiPIMS technique. The killing effects on biofilm bacteria were less obvious. After the total release of copper from the Ti-Cu film the vitality of exposed human osteoblast MG-63 cells increased significantly. An initial cytotoxic effect followed by the growth of osteoblastic cells was demonstrated. The cytotoxic effect combined with growth of osteoblastic cells could be used in joint replacement surgery to reduce the possibility of infection and to increase adoption of the implants. Highlights: {yields} Ti-Cu films with significant cytotoxic effect were prepared by dual-HiPIMS technique. {yields} The cytotoxic effect is caused by total release of copper species from thin films. {yields} The copper release is influenced by crystallography and chemical properties of thin films. {yields} Sufficient growth of osteoblastic cells follows after copper release.

  15. Magnetron sputtering source

    Science.gov (United States)

    Makowiecki, Daniel M.; McKernan, Mark A.; Grabner, R. Fred; Ramsey, Philip B.

    1994-01-01

    A magnetron sputtering source for sputtering coating substrates includes a high thermal conductivity electrically insulating ceramic and magnetically attached sputter target which can eliminate vacuum sealing and direct fluid cooling of the cathode assembly. The magnetron sputtering source design results in greater compactness, improved operating characteristics, greater versatility, and low fabrication cost. The design easily retrofits most sputtering apparatuses and provides for safe, easy, and cost effective target replacement, installation, and removal.

  16. Direct current (DC) resistivity and induced polarization (IP) monitoring of active layer dynamics at high temporal resolution

    DEFF Research Database (Denmark)

    Doetsch, Joseph; Ingeman-Nielsen, Thomas; Christiansen, Anders V.

    2015-01-01

    With permafrost thawing and changes in active layer dynamics induced by climate change, interactions between biogeochemical and thermal processes in the ground are of great importance. Here, active layer dynamics have been monitored using direct current (DC) resistivity and induced polarization (IP...... and subsurface temperatures supplemented the DC-IP measurements. A time-lapse DC-IP monitoring system has been acquiring at least six datasets per day on a 42-electrode profile with 0.5. m electrode spacing since July 2013. Remote control of the data acquisition system enables interactive adaptation...... of the measurement schedule, which is critically important to acquire data in the winter months, where extremely high contact resistances increase the demands on the resistivity meter. Data acquired during the freezing period of October 2013 to February 2014 clearly image the soil freezing as a strong increase...

  17. Speed Control of Brushless Dc Motor Using Current Fed Quasi Z-source Inverter with Regeneration Capability

    Directory of Open Access Journals (Sweden)

    A. Santhi Mary Antony

    2015-06-01

    Full Text Available Current fed Quasi Z-Source Inverters (qZSI have the advantages of voltage buck-boost capability, improved reliability, reduced passive component ratings, continuous input current, a common dc rail between source and inverter and unique regeneration capability. This current-fed qZSIs are bidirectional with an additional diode, unlike the voltage-fed ZSI that needs a switch to achieve bidirectional power flow. Since current fed quasi Z Source Inverter has many advantages it can be employed for motor drive applications such as Brushless DC motor (BLDC drive. Therefore this study proposes the use of qZSI for BLDC motor. The simulation results for the same are presented in this study.

  18. A fast novel soft-start circuit for peak current-mode DC—DC buck converters

    Science.gov (United States)

    Jie, Li; Miao, Yang; Weifeng, Sun; Xiaoxia, Lu; Shen, Xu; Shengli, Lu

    2013-02-01

    A fully integrated soft-start circuit for DC—DC buck converters is presented. The proposed high speed soft-start circuit is made of two sections: an overshoot suppression circuit and an inrush current suppression circuit. The overshoot suppression circuit is presented to control the input of the error amplifier to make output voltage limit increase in steps without using an external capacitor. A variable clock signal is adopted in the inrush current suppression circuit to increase the duty cycle of the system and suppress the inrush current. The DC—DC converter with the proposed soft-start circuit has been fabricated with a standard 0.13 μm CMOS process. Experimental results show that the proposed high speed soft-start circuit has achieved less than 50 μs start-up time. The inductor current and the output voltage increase smoothly over the whole load range.

  19. Behavior of a DC zero-flux current sensor; Magnetic field analysis and comparison with experimental results

    Energy Technology Data Exchange (ETDEWEB)

    Campostrini, P.; Sonato, P. (Istituto Gas Ionizzati del CNR, Padova (IT))

    1991-09-01

    In this paper the magnetic section of the finite-element ANSYS code, and in particular its optimization feature has been used to predict the behaviour of a zero-flux current sensor, briefly described, which is intended to be used in a fusion experiment to measure pulsed currents up to 50 kA, over a bandwidth from DC to 10 k Hz. The computed results fit well with those coming from experimental tests performed on a prototype.

  20. Harmonic analysis of DC capacitor current in sinusoidal and space-vector modulated neutral-point-clamped inverters

    Indian Academy of Sciences (India)

    Gopalakrishnan K S; G Narayanan

    2015-08-01

    The voltage ripple and power loss in the DC-capacitor of a voltage source inverter depend on the harmonic currents flowing through the capacitor. This paper presents a double Fourier series based analysis of the harmonic contents of the DC capacitor current in a three-level neutral-point clamped (NPC) inverter, modulated with sine-triangle pulse-width modulation (SPWM) or conventional space vector pulse-width modulation (CSVPWM) schemes. The analytical results are validated experimentally on a 3-kVA three-level inverter prototype. The capacitor current in an NPC inverter has a periodicity of 120º at the fundamental or modulation frequency. Hence, this current contains third-harmonic and triplen-frequency components, apart from switching frequency components. The harmonic components vary with modulation index and power factor for both PWM schemes. The third harmonic current decreases with increase in modulation index and also decreases with increase in power factor in case of both PWM methods. In general, the third harmonic content is higher with SPWM than with CSVPWM at a given operating condition. Also, power loss and voltage ripple in the DC capacitor are estimated for both the schemes using the current harmonic spectrum and equivalent series resistance (ESR) of the capacitor.

  1. Hardware Model Of A Shipboard Zonal Electrical Distribution System (ZEDS): Alternating Current/Direct Current (AC/DC)

    Science.gov (United States)

    2010-06-01

    Tach Tach K8061 USB Board DC 1 Power Supply Wall Outlet Power Supply Zach’s FPGA Board Computer Cycle Counter OpAmp B o ard DC 2...the Frequency (Counter) Opamp circuit card iv. Connect the 5v and ±12 Volts commons f. Verify power supply two (PS2), I used the White power...to Cooling Fans 131 The Circuit Board Architectures USB Board Schematic 132 Zach’s FPGA Board 133 Rachel’s OpAmp /Cycle

  2. Experimental Results of a DC Bus Voltage Level Control for a Load-Controlled Marine Current Energy Converter

    Directory of Open Access Journals (Sweden)

    Johan Forslund

    2015-05-01

    Full Text Available This paper investigates three load control methods for a  marine current energy converter using a vertical axis current  turbine (VACT mounted on a permanent magnet synchronous generator  (PMSG. The three cases are; a fixed AC load, a fixed pulse width  modulated (PWM DC load and DC bus voltage control of a DC  load. Experimental results show that the DC bus voltage control  reduces the variations of rotational speed by a factor of 3.5 at the cost  of slightly increased losses in the generator and transmission lines.  For all three cases, the tip speed ratio \\(\\lambda\\ can be kept close to  the expected \\(\\lambda_{opt}\\. The power coefficient is estimated to be  0.36 at \\(\\lambda_{opt}\\; however, for all three cases, the average  extracted power was about \\(\\sim 19\\\\%. A maximum power point  tracking (MPPT system, with or without water velocity measurement,  could increase the average extracted power.

  3. Analysis and design of high performance current-sensing circuit in current-control-mode DC-DC converter%电流模式DC-DC转换器中高性能电流检测电路的分析与设计

    Institute of Scientific and Technical Information of China (English)

    李林华; 黄太宏; 李为民; 张潭; 赵建明

    2012-01-01

      在电流模式控制的DC-DC转换器电路中,电流检测电路是其重要的组成模拟单元之一.文章分析了目前电流检测电路的优缺点,给出了一种高性能无额外功率损耗的高精度电流检测电路的设计方法,并在HHNEC BCD 0.35μm的工艺下,用Spectre进行了仿真验证.结果表明,该电路结构简单、易于实现,并已成功应用于某型Boost DC-DC电压转换电路中.%  Current-sensing circuit is one of the important analog units in a current-control-mode DC-DC converter. This paper analyzes the advantages and disadvantages of commonly current-sensing circuit. And then a high performance high-precision current-sensing circuit without additional power consumption is designed. This circuit is simulated with Spectre simulator which is based on HHNEC BCD 0.35μm process model. The results show that the advantages of this circuit is simple and easily realized. This circuit has been integrated successfully into some Boost DC-DC convertor chips.

  4. New lightning current resistant low voltage limiting device for DC railway systems; Neue blitzstromtragfaehige Niederspannungsbegrenzungseinrichtung zum Potenzialschutz von Gleichstrombahnsystemen

    Energy Technology Data Exchange (ETDEWEB)

    Rocks, A.; Hinrichsen, V. [Technische Univ. Darmstadt (Germany). Fachgebiet Hochspannungstechnik; Richter, B. [ABB Schweiz AG, Wettingen (Switzerland); Zayer, H. [ESN Bahngeraete GmbH, Mannheim (Germany)

    2007-07-01

    In dc railway systems, low voltage limiters are applied to limit potential rises in case of failures by forming a permanent short-circuit between return circuit and Earth. These devices can usually carry only moderate lightning currents without permanent failure. In this contribution, a new concept is introduced which provides personal as well as equipment protection by combining a surge arrester and a low voltage limiter in a suited way. (orig.)

  5. 推挽DC-DC变换器平均电流控制研究%Research of Average Current Mode Control Based on Push-pull DC-DC Converter

    Institute of Scientific and Technical Information of China (English)

    桂存兵; 谢运祥; 谢涛; 陈江辉

    2012-01-01

    In order to improve the current stability and reliability of the push-pull converter, this paper ana-lyzed the push-pull DC/DC converter operational principle, and on this basis, built its small signal mathe-matical model. With imposing the current-mode dual-loop control strategy into its control system, improved the system dynamic response and protection ability. It has given the design process of the control system of push-pull converter, simulation and experimental research also has been done in the paper. The simulation and experimental results showed that, in view of the push-pull converter, the dual-loop control strategy has got a good dynamic and static control performance.%该文为提高推挽变换器的电流稳定性和系统可靠性,通过分析了DC/DC推挽变换器的工作原理,在此基础上建立了小信号数学模型.并施以电流型双环控制策略,有效的提高系统的动态响应和保护能力.给出了推挽变换器的控制系统的设计过程,并进行了仿真和实验研究,结果表明针对推挽变换器,双环控制策略具有良好动态和静态控制性能.

  6. Hardware Model of a Shipboard Zonal Electrical Distribution System (ZEDS): Alternating Current/Direct Current (AC/DC)

    Science.gov (United States)

    2010-06-01

    shown in Figure 38. HFA60MC60C Ultrafast, Soft Recovery Diode ) OLA T ED EASE VR = 00V + V(tYP ) = 1 V F 6OA Qrr (typ) 2000C DC power Motors ANGCE...Massachusetts Institute of Technology, 2009 [13] "LabJack UE9 User’s Guide," Mar . 10, 2010. [Online] Available: [Accessed May 12, 2010]. [14] E

  7. Charge and fluence lifetime measurements of a dc high voltage GaAs photogun at high average current

    Energy Technology Data Exchange (ETDEWEB)

    J. Grames, R. Suleiman, P.A. Adderley, J. Clark, J. Hansknecht, D. Machie, M. Poelker, M.L. Stutzman

    2011-04-01

    GaAs-based dc high voltage photoguns used at accelerators with extensive user programs must exhibit long photocathode operating lifetime. Achieving this goal represents a significant challenge for proposed high average current facilities that must operate at tens of milliamperes or more. This paper describes techniques to maintain good vacuum while delivering beam, and techniques that minimize the ill effects of ion bombardment, the dominant mechanism that reduces photocathode yield of a GaAs-based dc high voltage photogun. Experimental results presented here demonstrate enhanced lifetime at high beam currents by: (a) operating with the drive laser beam positioned away from the electrostatic center of the photocathode, (b) limiting the photocathode active area to eliminate photoemission from regions of the photocathode that do not support efficient beam delivery, (c) using a large drive laser beam to distribute ion damage over a larger area, and (d) by applying a relatively low bias voltage to the anode to repel ions created within the downstream beam line. A combination of these techniques provided the best total charge extracted lifetimes in excess of 1000 C at dc beam currents up to 9.5 mA, using green light illumination of bulk GaAs inside a 100 kV photogun.

  8. Simplified dc to dc converter

    Science.gov (United States)

    Gruber, R. P. (Inventor)

    1984-01-01

    A dc to dc converter which can start with a shorted output and which regulates output voltage and current is described. Voltage controlled switches directed current through the primary of a transformer the secondary of which includes virtual reactance. The switching frequency of the switches is appropriately varied to increase the voltage drop across the virtual reactance in the secondary winding to which there is connected a low impedance load. A starting circuit suitable for voltage switching devices is provided.

  9. Observation of self-magnetic field relaxations in Bi2223 and Y123 HTS tapes after over-current pulse and DC current operation

    Science.gov (United States)

    Tallouli, M.; Sun, J.; Chikumoto, N.; Otabe, E. S.; Shyshkin, O.; Charfi-Kaddour, S.; Yamaguchi, S.

    2016-07-01

    The development of power transmission lines based on long-length HTS tapes requires the production of high quality tapes. Due to fault conditions, technical mistakes and human errors during the operation of a DC power transmission line, an over-current pulse, several times larger than the rated current, could occur. To study the effect of such over-current pulses on the transport current density distribution in the HTS tapes, we simulated two start-up scenarios for one BSCCO and two YBCO tapes. The first start-up scenario is an initial over-current pulse during which the transport current was turned on rapidly, rising to 900 A during the first milliseconds, then reduced to a 100 A DC current. The second start-up scenario is normal operation, and involved increasing the transport current slowly from 0 A to 100 A at a rate of 1 A/s. For both scenarios, we then measured the vertical component of the self-magnetic field by means of a Hall probe above the tape, and afterward, by solving a linear equation of the inverse problem we obtain the current density profiles. We observe a change of the self-magnetic field above the edge of the BSCCO and YBCO tapes during 30 min after the 5 ms of over-current pulse and during the normal operation. The current density profiles are peaked in the centre for over-current pulse, and more peaked around the edge of the HTS tape for normal operation, which means that the limited time over-current pulse changes the current density profiles of the HTS tapes. We observe also a loop of current for YBCO tapes and we show the role of the HTS tape stabilizer.

  10. Electrooptic Methods for Measurement of Small DC Currents at High Voltage Level

    DEFF Research Database (Denmark)

    Tønnesen, Ole; Beatty, Neville; Skilbreid, Asbjørn Ottar

    1989-01-01

    . The measuring methods can be used both for development and supervision of electrical insulating systems. For DC measurements a system wherein the voltage is applied (across the Pockels cell) not directly but via an electrooptic circuit was developed. This circuit periodically inverts the polarity of the voltage...... fibre to an electrooptic converter. Second, by use of an electronic circuit the measured signal can be converted into a modulated frequency form for transmission along an optical fibre. These systems are described, measurement results are presented and improvements to be made in the future are outlined...... across the cell, effectively applying a square wave voltage with amplitude equal to the DC voltage to be measured. The switching circuit is based around two high voltage transistors TA, TB, with the Pockels cell electrodes being each connected to one of the transistor collectors. The transistor...

  11. Current dependence of heat leak on the terminals in the superconducting DC transmission and distribution system of CASER-2

    Science.gov (United States)

    Kawahara, Toshio; Watanabe, Hirofumi; Emoto, Masahiko; Hamabe, Makoto; Yamaguchi, Sataro; Hikichi, Yasuo; Minowa, Masahiro

    2012-12-01

    Superconductivity can solve the energy problems in the world as energy saving technologies. In particular, superconducting direct current (DC) transmission and distribution (T&D) systems is promising, as it can be easily extended to large scale energy transmission systems for energy sharing. We are developing criogenic systems for effective cooling of superconducting T&D systems. In the cooling experiments with the 200 m-class superconducting DC T&D system at Chubu University (CASER-2), we have estimated the performance of the system. For example, our superconducting cable is connected to the outside at the terminals using Peltier current leads (PCLs). The PCL is composed of a thermoelectric material and a copper lead. Small thermal conductivity and large thermopower of the thermoelectric modules can effectively insulate the heat leak to the low temperature end. We measured the temperature along the current leads and the heat leak at the terminals. As current leads have an optimal shape factor, the optimum operation current exists. The current dependence of the system performance is discussed.

  12. Adaptive switching frequency buck DC—DC converter with high-accuracy on-chip current sensor

    Science.gov (United States)

    Jinguang, Jiang; Fei, Huang; Zhihui, Xiong

    2015-05-01

    A current-mode PWM buck DC—DC converter is proposed. With the high-accuracy on-chip current sensor, the switching frequency can be selected automatically according to load requirements. This method improves efficiency and obtains an excellent transient response. The high accuracy of the current sensor is achieved by a simple switch technique without an amplifier. This has the direct benefit of reducing power dissipation and die size. Additionally, a novel soft-start circuit is presented to avoid the inrush current at the starting up state. Finally, this DC—DC converter is fabricated with the 0.5 μm standard CMOS process. The chip occupies 3.38 mm2. The accuracy of the proposed current sensor can achieve 99.5% @ 200 mA. Experimental results show that the peak efficiency is 91.8%. The input voltage ranges from 5 to 18 V, while a 2 A load current can be obtained. Project supported by the National Natural Science Foundation of China (No. 41274047), the Natural Science Foundation of Jiangsu Province (No. BK2012639), the Science and Technology Enterprises in Jiangsu Province Technology Innovation Fund (No. BC2012121), and the Changzhou Science and Technology Support (Industrial) Project (No. CE20120074).

  13. Characteristics of sheath-driven tangential flow produced by a low-current DC surface glow discharge plasma actuator

    Science.gov (United States)

    Shin, Jichul; Shajid Rahman, Mohammad

    2014-08-01

    An experimental investigation of low-speed flow actuation at near-atmospheric pressure is presented. The flow actuation is achieved via low-current ( \\lesssim 1.0 mA) continuous or pulsed DC surface glow discharge plasma. The plasma actuator, consisting of two sharp-edged nickel electrodes, produces a tangential flow in a direction from anode to cathode, and is visualized using high-speed schlieren photography. The induced flow velocity estimated via the schlieren images reaches up to 5 m/s in test cases. The actuation capability increases with pressure and electrode gap distances, and the induced flow velocity increases logarithmically with the discharge power. Pulsed DC exhibits slightly improved actuation capability with better directionality. An analytic estimation of induced flow velocity obtained based on ion momentum in the cathode sheath and gas dynamics in one-dimensional flow yields values similar to those measured.

  14. Distributed Nonlinear Control with Event-Triggered Communication to Achieve Current-Sharing and Voltage Regulation in DC Microgrids

    DEFF Research Database (Denmark)

    Han, Renke; Meng, Lexuan; Guerrero, Josep M.

    2017-01-01

    A distributed nonlinear controller is presented to achieve both accurate current-sharing and voltage regulation simultaneously in dc microgrids considering different line impedances’ effects among converters. Then, an improved event-triggered principle for the controller is introduced through...... combining the state-dependent tolerance with a nonnegative offset. In order to design the event-triggered principle and guarantee the global stability, a generalized dc microgrid model is proposed and proven to be positive definite, based on which Lyapunov-based approach is applied. Furthermore, considering...... the effects from constant power loads, the damping performance of proposed controller is further improved and compared with the traditional V-I droop controller. The proposed event-triggered-based communication strategy can considerably reduce the communication traffic and significantly relax the requirement...

  15. Fabrication and characterization of He-charged ODS-FeCrNi films deposited by a radio-frequency plasma magnetron sputtering technique

    Science.gov (United States)

    Liang, SONG; Xianping, WANG; Le, WANG; Ying, ZHANG; Wang, LIU; Weibing, JIANG; Tao, ZHANG; Qianfeng, FANG; Changsong, LIU

    2017-04-01

    He-charged oxide dispersion strengthened (ODS) FeCrNi films were prepared by a radio-frequency (RF) plasma magnetron sputtering method in a He and Ar mixed atmosphere at 150 °C. As a comparison, He-charged FeCrNi films were also fabricated at the same conditions through direct current (DC) plasma magnetron sputtering. The doping of He atoms and Y2O3 in the FeCrNi films was realized by the high backscattered rate of He ions and Y2O3/FeCrNi composite target sputtering method, respectively. Inductive coupled plasma (ICP) and x-ray photoelectron spectroscopy (XPS) analysis confirmed the existence of Y2O3 in FeCrNi films, and Y2O3 content hardly changed with sputtering He/Ar ratio. Cross-sectional scanning electron microscopy (SEM) shows that the FeCrNi films were composed of dense columnar nanocrystallines and the thickness of the films was obviously dependent on He/Ar ratio. Nanoindentation measurements revealed that the FeCrNi films fabricated through DC/RF plasma magnetron sputtering methods exhibited similar hardness values at each He/Ar ratio, while the dispersion of Y2O3 apparently increased the hardness of the films. Elastic recoil detection (ERD) showed that DC/RF magnetron sputtered FeCrNi films contained similar He amounts (∼17 at.%). Compared with the minimal change of He level with depth in DC-sputtered films, the He amount decreases gradually in depth in the RF-sputtered films. The Y2O3-doped FeCrNi films were shown to exhibit much smaller amounts of He owing to the lower backscattering possibility of Y2O3 and the inhibition effect of nano-sized Y2O3 particles on the He element.

  16. Negative DC corona discharge current characteristics in a flowing two-phase (air + suspended smoke particles) fluid

    Science.gov (United States)

    Berendt, Artur; Domaszka, Magdalena; Mizeraczyk, Jerzy

    2017-04-01

    The electrical characteristics of a steady-state negative DC corona discharge in a two-phase fluid (air with suspended cigarette smoke particles) flowing along a chamber with a needle-to-plate electrode arrangement were experimentally investigated. The two-phase flow was transverse in respect to the needle-to-plate axis. The velocity of the transverse two-phase flow was limited to 0.8 m/s, typical of the electrostatic precipitators. We found that three discharge current modes of the negative corona exist in the two-phase (air + smoke particles) fluid: the Trichel pulses mode, the "Trichel pulses superimposed on DC component" mode and the DC component mode, similarly as in the corona discharge in air (a single-phase fluid). The shape of Trichel pulses in the air + suspended particles fluid is similar to that in air. However, the Trichel pulse amplitudes are higher than those in "pure" air while their repetition frequency is lower. As a net consequence of that the averaged corona discharge current in the two-phase fluid is lower than in "pure" air. It was also found that the average discharge current decreases with increasing suspended particle concentration. The calculations showed that the dependence of the average negative corona current (which is a macroscopic corona discharge parameter) on the particle concentration can be explained by the particle-concentration dependencies of the electric charge of Trichel pulse and the repetition frequency of Trichel pulses, both giving a microscopic insight into the electrical phenomena in the negative corona discharge. Our investigations showed also that the average corona discharge current in the two-phase fluid is almost unaffected by the transverse fluid flow up to a velocity of 0.8 m/s. Contribution to the topical issue "The 15th International Symposium on High Pressure Low Temperature Plasma Chemistry (HAKONE XV)", edited by Nicolas Gherardi and Tomáš Hoder

  17. Spin-Hall-Effect-Assisted Electroresistance in Antiferromagnets via 105 A/cm2 dc Current

    Science.gov (United States)

    Han, Jiahao; Wang, Yuyan; Pan, Feng; Song, Cheng

    2016-08-01

    Antiferromagnet (AFM) spintronics with reduced electrical current is greatly expected to process information with high integration and low power consumption. In Pt/FeMn and Ta/FeMn hybrids, we observe significant resistance variation (up to 7% of the total resistance) manipulated by 105 A/cm2 dc current. We have excluded the contribution of isotropic structural effects, and confirmed the critical role of the spin Hall injection from Pt (or Ta) to FeMn. This electrical current-manipulated resistance (i.e. electroresistance) is proposed to be attributed to the spin-Hall-effect-induced spin-orbit torque in FeMn. Similar results have also been detected in plain IrMn films, where the charge current generates spin current via the spin Hall effect with the existence of Ir atoms. All the measurements are free from external magnetic fields and ferromagnets. Our findings present an interesting step towards high-efficiency spintronic devices.

  18. Self-commutated high-voltage direct current transmission with DC circuit breakers. Backbone for the energy policy turnaround; Selbstgefuehrte Hochspannungs-Gleichstromuebertragung mit DC-Leistungsschalter. Rueckgrat fuer die Energiewende

    Energy Technology Data Exchange (ETDEWEB)

    Goerner, Raphael [ABB AG, Mannheim (Germany). Marketing und Vertrieb, Geschaeftsbereich Grid Systems

    2013-06-01

    The 'current war' between direct current and alternating current is extended by a new location. In the future, both technologies work together in order to provide a reliable power transmission in Germany and long-term in Europe. This is based on the self-guided high-voltage direct current transmission. In conjunction with direct current circuit breakers (DC circuit breaker) the power circuit breakers may help to make the transmission grids more flexible and to minimize losses.

  19. High frequency pulse anodising of magnetron sputtered Al–Zr and Al–Ti Coatings

    DEFF Research Database (Denmark)

    Gudla, Visweswara Chakravarthy; Bordo, Kirill; Engberg, Sara

    2016-01-01

    High frequency pulse anodising of Al–Zr and Al–Ti coatings is studied as a surface finishing technique and compared to conventional decorative DC anodising. The Al–Zr and Al–Ti coatings were deposited using DC magnetron sputtering and were heat treated after deposition to generate a multiphase mi...

  20. Influence of addition of indium and of post-annealing on structural, electrical and optical properties of gallium-doped zinc oxide thin films deposited by direct-current magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Pham, Duy Phong [Laboratory of Advanced Materials, University of Science, Vietnam National University, HoChiMinh (Viet Nam); College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Nguyen, Huu Truong [Laboratory of Advanced Materials, University of Science, Vietnam National University, HoChiMinh (Viet Nam); Phan, Bach Thang [Laboratory of Advanced Materials, University of Science, Vietnam National University, HoChiMinh (Viet Nam); Faculty of Materials Science, University of Science, Vietnam National University, HoChiMinh (Viet Nam); Hoang, Van Dung [Laboratory of Advanced Materials, University of Science, Vietnam National University, HoChiMinh (Viet Nam); Maenosono, Shinya [School of Materials Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292 (Japan); Tran, Cao Vinh, E-mail: tcvinh@hcmus.edu.vn [Laboratory of Advanced Materials, University of Science, Vietnam National University, HoChiMinh (Viet Nam)

    2015-05-29

    In this study, both gallium-doped zinc oxide (GZO) and indium-added gallium-doped zinc oxide (IGZO) thin films were deposited on commercial glasses by magnetron dc-sputtering in argon atmosphere. The crystal structure, electrical conductivity and optical transmission of as-deposited as well as post-annealed thin films of both GZO and IGZO were investigated for comparison. A small amount of indium introduced into GZO thin films had improved their polycrystalline structure and increased their electrical conductivity by over 29%. All obtained GZO and IGZO thin films have strong [002] crystalline direction, a characteristic orientation of ZnO thin films. Although post-annealed in air at high temperatures up to 500 °C, IGZO thin films still had very low sheet resistance of 6.6 Ω/□. Furthermore, they had very high optical transmission of over 80% in both visible and near-infrared regions. - Highlights: • Doping 0.1 at.% indium enhanced crystalline, electrical properties of GZO films. • The mobility of IGZO films was 25% higher than that of GZO films. • The IGZO films will be potential materials for transparent conducting electrodes.

  1. Influence of nitrogen flow rates on materials properties of CrN films grown by reactive magnetron sputtering

    Indian Academy of Sciences (India)

    B Subramanian; K Prabakaran; M Jayachandran

    2012-08-01

    Chromium nitride (CrN) hard thin films were deposited on different substrates by reactive direct current (d.c.) magnetron sputtering with different nitrogen flow rates. The X-ray diffraction patterns showed mixed Cr2N and CrN phases. The variations in structural parameters are discussed. The grain size increased with increasing nitrogen flow rates. Scanning electron microscopy image showed columnar and dense microstructure with varying nitrogen flow rates. An elemental analysis of the samples was realized by means of energy dispersive spectroscopy. The electrical studies indicated the semiconducting behaviour of the films at the nitrogen flow rate of 15 sccm.

  2. Perspective: Is there a hysteresis during reactive High Power Impulse Magnetron Sputtering (R-HiPIMS)?

    Science.gov (United States)

    Strijckmans, K.; Moens, F.; Depla, D.

    2017-02-01

    This paper discusses a few mechanisms that can assist to answer the title question. The initial approach is to use an established model for DC magnetron sputter deposition, i.e., RSD2013. Based on this model, the impact on the hysteresis behaviour of some typical HiPIMS conditions is investigated. From this first study, it becomes clear that the probability to observe hysteresis is much lower as compared to DC magnetron sputtering. The high current pulses cannot explain the hysteresis reduction. Total pressure and material choice make the abrupt changes less pronounced, but the implantation of ionized metal atoms that return to the target seems to be the major cause. To further substantiate these results, the analytical reactive sputtering model is coupled with a published global plasma model. The effect of metal ion implantation is confirmed. Another suggested mechanism, i.e., gas rarefaction, can be ruled out to explain the hysteresis reduction. But perhaps the major conclusion is that at present, there are too little experimental data available to make fully sound conclusions.

  3. 75 FR 47242 - Airworthiness Directives; McDonnell Douglas Corporation Model DC-9-14, DC-9-15, and DC-9-15F...

    Science.gov (United States)

    2010-08-05

    ... Corporation Model DC- 9-14, DC-9-15, and DC-9-15F Airplanes; and Model DC-9-20, DC-9-30, DC- 9-40, and DC-9-50... airworthiness directive (AD) that applies to certain Model DC-9-14 and DC-9-15 airplanes; and Model DC-9-20, DC-9-30, DC-9-40, and DC-9-50 series airplanes. The existing AD currently......

  4. Direct current (DC) resistivity and Induced Polarization (IP) monitoring of active layer dynamics at high temporal resolution

    DEFF Research Database (Denmark)

    Doetsch, J.; Fiandaca, G.; Ingeman-Nielsen, Thomas;

    2015-01-01

    With permafrost thawing and changes in active layer dynamics induced by climate change, interactions between biogeochemical and thermal processes in the ground are of great importance. Here, active layer dynamics have been monitored using direct current (DC) resistivity and induced polarization (IP...... the soil freezing as a strong increase in resistivity. While the freezing horizon generally moves deeper with time, some variations in the freezing depth are observed along the profile. Comparison with depth-specific soil temperature indicates an exponential relationship between resistivity and below...

  5. Fault detection and diagnosis of permanent-magnetic DC motors based on current analysis and BP neural networks

    Institute of Scientific and Technical Information of China (English)

    LIU Man-lan; ZHU Chun-bo; WANG Tie-cheng

    2005-01-01

    In order to guarantee quality during mass serial production of motors, a convenient approach on how to detect and diagnose the faults of a permanent-magnetic DC motor based on armature current analysis and BP neural networks was presented in this paper. The fault feature vector was directly established by analyzing the armature current. Fault features were extracted from the current using various signal processing methods including Fourier analysis, wavelet analysis and statistical methods. Then an advanced BP neural network was used to finish decision-making and separate fault patterns. Finally, the accuracy of the method in this paper was verified by analyzing the mechanism of faults theoretically. The consistency between the experimental results and the theoretical analysis shows that four kinds of representative faults of low power permanent-magnetic DC motors can be diagnosed conveniently by this method. These four faults are brush fray, open circuit of components, open weld of components and short circuit between armature coils. This method needs fewer hardware instruments than the conventional method and whole procedures can be accomplished by several software packages developed in this paper.

  6. Generation of reference dc currents at 1 nA level with the capacitance-charging method

    CERN Document Server

    Callegaro, Luca; D'Elia, Vincenzo; Galliana, Flavio

    2013-01-01

    The capacitance-charging method is a well-established and handy technique for the generation of dc current in the 100 pA range or lower. The method involves a capacitance standard and a sampling voltmeter, highly stable devices easy to calibrate, and it is robust and insensitive to the voltage burden of the instrument being calibrated. We propose here a range extender amplifier, which can be employed as a plug-in component in existing calibration setups, and allows the generation of currents in the 1 nA range. The extender has been employed in the INRIM setup and validated with two comparisons at 100 pA and 1 nA current level. The calibration accuracy achieved on a top-class instrument is 10 ppm at 1 nA.

  7. Position-and Velocity- Sensorless Control of Cylindrical Brushless DC Motors Driven by Sinusoidal Current at Low Speed Using Eddy Current

    Science.gov (United States)

    Takashima, Hiroshi; Tomita, Mutuwo; Chen, Zhiqian; Satoh, Mitsuhiko; Doki, Shinji; Okuma, Shigeru

    This paper proposes to paste non-magnetic materials on the rotor surface of a cylindrical brushless DC motor and to use the model including the extended e.m.f. for sensorless control. In the proposed method, the inductance changes depending on the rotor position because of eddy currents, which flow on the non-magnetic material at high frequency. The rotor position can be estimated at standstill and at low speeds. The simulation results show that the proposed method is very useful.

  8. Proposal for the Award of a Contract for the Supply of High Precision 120A dc Current Transducersfor Power Converters

    CERN Document Server

    2002-01-01

    This document concerns the award of a contract for the supply of 2430 high precision 120A DC current transducers for LHC power converters. Following a market survey carried out among 117 firms in seventeen Member States, a call for tenders (IT-2912/SL/LHC) was sent on 30 May 2002 to three firms, in three Member States. By the closing date, CERN had received three tenders from three firms in three Member States. The Finance Committee is invited to agree to the negotiation of a contract with KG RITZ MESSWANDLER (DE), the lowest bidder, for the supply of 2430 high precision 120A DC current transducers for LHC power converters for a total amount of 727 495 euros (1 069 200 Swiss francs), not subject to revision, with an option for up to 250 spare units for an additional amount of 79 609 euros (117 000 Swiss francs), not subject to revision, bringing the total amount to 807 104 euros (1 186 200 Swiss francs), not subject to revision. The rate of exchange used is that stipulated in the tender. The firm has indicate...

  9. Theory of the magnetronic laser

    CERN Document Server

    Pardy, M

    2003-01-01

    We determine the total power of radiation of electron moving in the planar magnetron fields and the power spectrum generated by a single electron and by a system of N electrons moving coherently in the planar magnetron. We argue that for large N and high intensity of electric and magnetic fields, the power of radiation of such magnetronic laser, MAL, can be sufficient for application in the physical, chemical, biological and medicine sciences. In medicine, the magnetronic laser, can be used for the therapy of the localized cancer tumors. The application of MAL in CERN as an ion source for LHC is not excluded.

  10. Deposition of the TiN and TiO2 films in the inverted cylindrical direct-current magnetron by a reactive sputtering

    Directory of Open Access Journals (Sweden)

    Kostin E. G.

    2008-08-01

    Full Text Available Results of research of optical radiation of discharge plasma in a wave range 350 – 820 nm and discharge voltage of an inverted cylindrical magnetron at various flows of reactive gases (N2, О2 are presented. Changes of discharge voltage have features which can be compared to a films composition and with character of changes of intensity of spectral lines of titanium atoms and molecules of reacting gases. It is shown, that the control of a deposition of TiN and TiO2 films it is possible to carry out, both with the help of measuring of discharge voltage, and with the help of the optical control of intensity of Ti, N2, O2 lines emitted by plasma. The optical control simultaneously several components of the gas medium is more informative. Optimum conditions of synthesis of stoichiometric TiN and TiO2 films are determined. The X-ray analysis was carried out, the microhardness of TiN films and refractive index of TiO2 films, received in optimum requirements, was measured.

  11. Quench behavior of Sr0.6K0.4Fe2As2/Ag tapes with AC and DC transport currents at different temperature

    Science.gov (United States)

    Liu, Qi; Zhang, Guomin; Yang, Hua; Li, Zhenming; Liu, Wei; Jing, Liwei; Yu, Hui; Liu, Guole

    2016-09-01

    In applications, superconducting wires may carry AC or DC transport current. Thus, it is important to understand the behavior of normal zone propagation in conductors and magnets under different current conditions in order to develop an effective quench protection system. In this paper, quench behavior of Ag sheathed Sr0.6K0.4Fe2As2 (Sr-122 in the family of iron-based superconductor) tapes with AC and DC transport current is reported. The measurements are performed as a function of different temperature (20 K-30 K), varying transport current and operating frequency (50 Hz-250 Hz). The focus of the research is the minimum quench energy (MQE), the normal zone propagation velocity (NZPV) and the comparison of the related results with AC and DC transport current.

  12. Calculated spinal cord electric fields and current densities for possible neurite regrowth from quasi-DC electrical stimulation.

    Science.gov (United States)

    Greenebaum, Ben

    2015-12-01

    The prime goal of this work was to model essentially steady (DC) fields from electrodes, implanted in several ways, which have been suggested as possible means to encourage nerve fiber regrowth in spinal cord injuries. A simplified model of the human spinal cord in the lumbar region and the SEMCAD-X computer program were used to calculate electric field and current density patterns from electrodes outside vertebrae and those inserted extradurally within the spinal canal. DC electric fields guide nerve growth in developing organisms and in vitro. They also have been shown to encourage healing of injured peripheral nerves, and application of a longitudinal field has been used in attempts to bridge spinal cord injuries. When calculated results are scaled to the experimental level used in the literature, all modeled electrodes produced fields in the spinal cord below fields needed in the literature for stimulation of spinal as well as peripheral nerve growth in vitro, in dogs, and in a published clinical human trial. The highly-conducting cerebrospinal fluid appeared to provide effective shielding; there was also a very high degree of polarization at electrodes. © 2015 Wiley Periodicals, Inc.

  13. DC Josephson effect and critical currents of YBa 2Cu 3O 7 and Tl 2CaBa 2O 8

    Science.gov (United States)

    Kleiner, R.; Müller, P.; Andres, K.

    1989-12-01

    The DC Josephson effect between grains in YBa 2Cu 3O 7 and Tl 2CaBa 2Cu 2O 8 sinters was investigated. DC SQUID operation was detected in two geometries up to T = 86 K and T = 101 K respectively. The results are consistent with the assumption that the grain boundaries are S-N-S or S-S'-S junctions and that the transport currents are of pure Josephson type.

  14. Leakage current and stability of acrylic elastomer subjected to high DC voltage

    Science.gov (United States)

    Hammami, S.; Jean-Mistral, C.; Jomni, F.; Gallot-Lavallée, O.; Rain, P.; Yangui, B.; Sylvestre, A.

    2015-04-01

    Dielectric elastomers such as 3M VHB4910 acrylate film have been widely used for electromechanical energy conversion such as actuators, sensors and generators, due to their lightweight, high efficiency, low cost and high energy density. Mechanical and electric properties of such materials have been deeply investigated according to various parameters (temperature, frequency, pre-stress, nature of the compliant electrodes…). Models integrating analytic laws deduced from experiments increase their accuracy. Nevertheless, leakage current and electrical breakdown reduce the efficiency and the lifetime of devices made with these polymers. These two major phenomena are not deeply investigated in the literature. Thus, this paper describes the current-voltage characteristics of acrylate 3M VHB4910 and investigates the stability of the current under high electric field (kV) for various temperatures (from 20°C to 80°C) and over short (300 s) and long (12h) periods. Experimental results show that, with gold electrodes at ambient temperature, the current decreases with time to a stable value corresponding to the conduction current. This decrease occurs during 6 hours, whereas in the literature values of current at short time (less than 1 hour) are generally reported. This decrease can be explained by relaxations mechanisms in the polymer. Schottky emission and Poole-Frenkel emission are both evaluated to explain the leakage current. It emerges from this study that the Schottky effect constitutes the main mechanism of electric current in the 3M VHB4910. For high temperatures, the steady state is reached quickly. To end, first results on the leakage current changes for pre-stretch VHB4910 complete this study.

  15. Unusual dc electric fields induced by a high frequency alternating current in superconducting Nb films under a perpendicular magnetic field

    Science.gov (United States)

    Aliev, F. G.; Levanyuk, A. P.; Villar, R.; Sierra, J. F.; Pryadun, V. V.; Awad, A.; Moshchalkov, V. V.

    2009-06-01

    We report a systematic study of dc electric fields produced by sinusoidal high frequency ac currents in Nb superconducting films subject to a constant magnetic field perpendicular to the film plane. At frequencies in the 100 kHz to MHz range appears a new rectification effect which has not been previously observed at lower frequencies. We have observed the dc electric field generated in this regime in films without intentionally created anisotropic pinning centres, i.e. plain films, both in strip geometry as in cross-shape geometry, and also in films with symmetric periodic pinning centres. The electric field appears in both directions along and transverse to the alternating current and is essentially different at opposite film sides. It depends strongly on the intensity of the magnetic field and may exceed by nearly an order of magnitude the rectified electric fields recently reported at lower frequencies (few kHz) in systems with artificially induced anisotropic vortex pinning. The effect has a non-monotonic dependence on the drive current frequency, being maximum around a few 100 kHz to MHz, and shows a complicated temperature dependence. It is found to be different in long strips and cross shape samples. In the case of films with symmetric periodic pinning centres the rectified voltage shows a lower magnitude than in plain films, and shows an interesting structure when the applied magnetic field crosses the matching fields. We are only able to put forward tentative ideas to explain this phenomenon, which irrespective of its explanation should be taken into account in experimental studies of rectification effects in superconductors.

  16. Mechanistic studies of flux variability of neutral and ionic permeants during constant current dc iontophoresis with human epidermal membrane.

    Science.gov (United States)

    Li, S Kevin; Higuchi, William I; Kochambilli, Rajan P; Zhu, Honggang

    2004-04-01

    Although constant current iontophoresis is supposed to provide constant transdermal transport, significant flux variability and/or time-dependent flux drifts are observed during iontophoresis with human skin in vitro and human studies in vivo. The objectives of the present study were to determine (a) the causes of flux variability in constant current dc transdermal iontophoresis and (b) the relationships of flux variabilities among permeants of different physicochemical properties. Changes in the human epidermal membrane (HEM) effective pore size and/or electroosmosis during constant current dc iontophoresis were examined. Tetraethylammonium ion (TEA), urea, and mannitol were the model permeants. For the neutral permeants, the results in the present study showed a significant increase of fluxes with time in a given experiment and large HEM sample-to-sample variability. Although both effective pore size and pore charge density variations contributed to the time-dependent flux drifts observed in electroosmotic transport, the significant flux drifts observed were found to be primarily a result of the time-dependent increase in effective pore charge density. For the ionic permeant, the observed flux variability was smaller than that of the neutral permeants and was believed to be primarily due to effective pore size alteration in HEM during iontophoresis as suggested in a previous study. The different extents of flux variability observed between neutral and ionic permeants are consistent with the different iontophoretically enhanced transport mechanisms for the neutral and ionic permeants (i.e. electroosmosis and electrophoresis, respectively). The results of the present study also demonstrate that flux variability of two neutral permeants are inter-related, so the flux of one neutral permeant can be predicted if the permeability coefficient of the other neutral permeant is known.

  17. Current characteristic signals of aqueous solution transferring through microfluidic channel under non-continuous DC electric field

    Directory of Open Access Journals (Sweden)

    HongWei Ma

    2014-10-01

    Full Text Available The surface effect is becoming apparently significant as the miniaturization of fluidic devices. In the micro/nanochannel fluidics, the electrode surface effects have the same important influence on the current signals as the channel surface effects. In this paper, when aqueous solution are driven with non-continuous DC electric field force, the characteristics of current signals of the fluid transferring through microfluidic channel are systematically studied. Six modes of current signal are summarized, and some new significant phenomena are found, e.g. there exists a critical voltage at which the steady current value equals to zero; the absolute value of the steady current decreases at first, however, it increases with the external voltage greater than the critical voltage as the electrode area ratio of cathode and anode is 10 and 20; the critical voltage increases with the enhancing of electrode area ratio of cathode and anode and solution pH, while it decreases with the raising of ion concentration. Finally, the microscopic mechanism of the electrode surface charge effects is discussed preliminarily. The rules will be helpful for detecting and manipulating single biomolecules in the micro/nanofluidic chips and biosensors.

  18. Performance Improvement for Two-Stage Single-Phase Grid-Connected Converters Using a Fast DC Bus Control Scheme and a Novel Synchronous Frame Current Controller

    Directory of Open Access Journals (Sweden)

    Bingzhang Li

    2017-03-01

    Full Text Available Two-stage single-phase grid-connected converters are widely used in renewable energy applications. Due to the presence of a second harmonic ripple across the DC bus voltage, it is very challenging to design the DC bus voltage control scheme in single-phase grid-connected inverters. The DC bus voltage controller must filter the ripple and balance a tradeoff between low harmonic distortion and high bandwidth. This paper presents a fast DC bus voltage controller, which uses a second order digital finite impulse response (FIR notch filter in conjunction with input power feedforward scheme to ensure the steady-state and dynamic performance. To gain the input power without extra hardware, a Kalman filter is incorporated to estimate the DC bus input current. At the same time, a modulation compensation strategy is implemented to eliminate the nonlinearity of the grid current control loop, which is caused by the DC bus voltage ripple. Moreover, a novel synchronous frame current controller for single-phase systems is also introduced, and its equivalent model in stationary frame has been derived. Simulation and experimental results are provided to verify the effective of the proposed control scheme.

  19. Comparative study between an alternating current (AC) and a direct current (DC) electrification of an urban railway

    OpenAIRE

    Garriga Turu, Jordi

    2015-01-01

    This study will evaluate technically, energetic and economically the traction electrification network of the line Barcelona – Vallès operated by Ferrocarrils de la Generalitat de Catalunya (FGC) in the existing voltage system (1500 Vdc) and a new electrification under alternative current (25 kVac) will be proposed to be as well studied. The results obtained will be compared in order to obtain decision factors on which system best fits.

  20. Room temperature deposition of high figure of merit Al-doped zinc oxide by pulsed-direct current magnetron sputtering: Influence of energetic negative ion bombardment on film's optoelectronic properties

    Energy Technology Data Exchange (ETDEWEB)

    Fumagalli, F., E-mail: francesco.fumagalli@iit.it; Martí-Rujas, J., E-mail: javier.rujas@iit.it; Di Fonzo, F., E-mail: fabio.difonzo@iit.it

    2014-10-31

    Aluminum-doped zinc oxide is regarded as a promising indium-free transparent conductive oxide for photovoltaic and transparent electronics. In this study high transmittance (up to 90,6%) and low resistivity (down to 8,4°1{sup −4} Ω cm) AZO films were fabricated at room temperature on thermoplastic and soda-lime glass substrates by means of pulsed-DC magnetron sputtering in argon gas. Morphological, optical and electrical film properties were characterized using scanning electron microscopy, UV–vis–nIR photo-spectrometer, X-ray spectroscopy and four probes method. Optimal deposition conditions were found to be strongly related to substrate position. The dependence of functional properties on substrate off-axis position was investigated and correlated to the angular distributions of negative ions fluxes emerging from the plasma discharge. Figure of merit as high as 2,15 ± 0,14 Ω{sup −1} were obtained outside the negative oxygen ions confinement region. Combination of high quality AZO films deposited on flexible polymers substrates by means of a solid and scalable fabrication technique is of interest for application in cost-effective optoelectrical devices, organic photovoltaics and polymer based electronics. - Highlights: • High figure of merit transparent conductive oxide's deposited at room temperature. • High transmittance and low resistivity obtained on thermoplastic substrates. • Competitive optoelectrical properties compared to high temperature deposition. • Negative ion fluxes confinement influence structural and optoelectrical properties. • Easily adaptable for scaled-up low temperature AZO film deposition installations.

  1. Impurity Deionization Effects on Surface Recombination DC Current-Voltage Characteristics in MOS Transistors

    Energy Technology Data Exchange (ETDEWEB)

    Chen Zuhui [Lee-Kuan-Yew Postdoctoral Fellow, 2007-2010, Nanyang Technological University, Singapore 639798 (Singapore); Jie Binbin; Sah Chihtang, E-mail: bb_jie@msn.com [Department of Physics, Xiamen University, Xiamen 361005 (China)

    2010-12-15

    Impurity deionization on the direct-current current-voltage characteristics from electron-hole recombination (R-DCIV) at SiO{sub 2}/Si interface traps in MOS transistors is analyzed using the steady-state Shockley-Read-Hall recombination kinetics and the Fermi distributions for electrons and holes. Insignificant distortion is observed over 90% of the bell-shaped R-DCIV curves centered at their peaks when impurity deionization is excluded in the theory. This is due to negligible impurity deionization because of the much lower electron and hole concentrations at the interface than the impurity concentration in the 90% range. (invited papers)

  2. Hysteresis losses in MgB2 superconductors exposed to combinations of low AC and high DC magnetic fields and transport currents

    DEFF Research Database (Denmark)

    Magnusson, N.; Abrahamsen, Asger Bech; Liu, Dawei

    2014-01-01

    a simplified theoretical treatment of the hysteresis losses based on available models in the literature with the aim of setting the basis for estimation of the allowable magnetic fields and current ripples in superconducting generator coils intended for large wind turbine direct drive generators. The resulting...... equations use the DC in-field critical current, the geometry of the superconductor and the magnitude of the AC magnetic field component as parameters. This simplified approach can be valuable in the design of MgB2 DC coils in the 1–4T range with low AC magnetic field and current ripples....

  3. Origin of the energetic ion beams at the substrate generated during high power pulsed magnetron sputtering of titanium

    CERN Document Server

    Maszl, Christian; Benedikt, Jan; von Keudell, Achim

    2013-01-01

    High power pulsed magnetron sputtering (HiPIMS) plasmas generate energetic metal ions at the substrate as a major difference to conventional direct current magnetron sputtering. The origin of these energetic ions in HiPIMS is still an open issue, which is unraveled by using three fast diagnostics: time resolved mass spectrometry with a temporal resolution of 2 $\\mu$s, phase resolved optical emission spectroscopy with 1 $\\mu$s and the rotating shutter experiment with a resolution of 50 $\\mu$s. A power scan from dcMS-like to HiPIMS plasmas was performed, with a 2-inch magnetron and a titanium target as sputter source and argon as working gas. Clear differences in the transport as well in the energetic properties of Ar$^+$, Ar$^{2+}$, Ti$^+$ and Ti$^{2+}$ were observed. For discharges with highest peak power densities a high energetic group of Ti$^{+}$ and Ti$^{2+}$ could be identified. A cold group of ions is always present. It is found that hot ions are observed only, when the plasma enters the spokes regime, ...

  4. 隔离型DC/DC在高压电压电流源设计中的应用%Application of isolated DC/DC converter in high level voltage and current source design

    Institute of Scientific and Technical Information of China (English)

    黄弋; 周菁

    2012-01-01

    由于隔离型DC/DC的安全性、隔离性等特征,该类器件广泛应用于多个电子、工业领域,本文主要介绍了隔离型DC/DC在高压电压电流源中的应用。本文将隔离型双输出DC/DC引入设计,利用DC/DC的隔离特性,将电压电流源的次级输出作为DC/DC器件参考地,将DC/DC器件的两路输出电压作为相关运算放大器的电源电压。常规高压电压电流源设计中需要大量采用高压运算放大器,采用此方案可使用较少的高压运算放大器及更低的成本实现相同功能,同时降低高压电源对PCB电路板上信号的影响。通过实际测量,文中方案输出稳定、精度高,满足设计与使用要求。文中用功能图纸对此类应用进行了详细说明。%Because of the Characteristics of safety and reliability, isolated DC/DC converter is widely used in many fields, such as electronic field and industry field. This paper describes the application of isolated DC/DC converter in ATE voltage and current source designing. The voltage and current source circuit are mainly realized by Operational amplifiers. When isolated DC/DC converter is used in the design, we can use less Operational amplifiers and cost less to realize the same function. In the project, the two voltage outputs of isolated DC/DC converter are used as power supply of Operational amplifiers, and the secondary output of voltage and current source is used as reference ground. It is effective to reduce system noise of high voltage power supply and to make signal quality on PCB getting better. It was confirmed that the system we discussed in this paper meet the requirements of reliability and precision through the measurement result. The details of the schematic are also describes in the paper

  5. DC buffering and floating current for a high voltage IMB application

    Energy Technology Data Exchange (ETDEWEB)

    Morrison, J. L. [Idaho National Lab. (INL), Idaho Falls, ID (United States)

    2014-08-01

    An interface technique for the latest generation of the Impedance Measurement Box (IMB) has been conceived to enable measurement of impedance spectra for battery modules up to 300V. A 300V capable or higher IMB is an enabling technology for in-situ diagnostics within electric vehicle charging stations or battery back-ups within power distribution sub-stations. It is possible that the existing IMB can be adapted via a 300V interface module to a test battery with voltage significantly greater than 50V. Recently a new concept was conceived for the calibration, algorithm and electronics of the IMB. That algorithm and calibration for that concept have been physically validated. The principal feature of the new electronics is the floating current source excitation of the battery under test. The single ended current excitation of the battery under test, used in the 50V IMB, requires that the negative terminal of the test battery must be the analog ground for the IMB. The new floating current technique allows the test battery to be fully high impedance isolated for a measurement. That isolation will improve IMB noise immunity and enable interrogation of cells internal to a battery module. All these techniques still use the same rapid concept for impedance measurement with the IMB. The purpose of this disclosure is to provide an overview of the analytical validation for three concepts to interface the floating current excitation to a high voltage battery. Recursive simulation models were used in different test scenarios to validate the various new concepts. The analysis will show that it is possible to interface the floating signal current to obtain an impedance measurement on a high voltage test battery. Additionally, the analysis will investigate stress seen by electronics while testing a 300V battery.

  6. Modelling the electric field and the current density generated by cerebellar transcranial DC stimulation in humans.

    Science.gov (United States)

    Parazzini, Marta; Rossi, Elena; Ferrucci, Roberta; Liorni, Ilaria; Priori, Alberto; Ravazzani, Paolo

    2014-03-01

    Transcranial Direct Current Stimulation (tDCS) over the cerebellum (or cerebellar tDCS) modulates working memory, changes cerebello-brain interaction, and affects locomotion in humans. Also, the use of tDCS has been proposed for the treatment of disorders characterized by cerebellar dysfunction. Nonetheless, the electric field (E) and current density (J) spatial distributions generated by cerebellar tDCS are unknown. This work aimed to estimate E and J distributions during cerebellar tDCS. Computational electromagnetics techniques were applied in three human realistic models of different ages and gender. The stronger E and J occurred mainly in the cerebellar cortex, with some spread (up to 4%) toward the occipital cortex. Also, changes by ±1cm in the position of the active electrode resulted in a small effect (up to 4%) in the E and J spatial distribution in the cerebellum. Finally, the E and J spreads to the brainstem and the heart were negligible, thus further supporting the safety of this technique. Despite inter-individual differences, our modeling study confirms that the cerebellum is the structure mainly involved by cerebellar tDCS. Modeling approach reveals that during cerebellar tDCS the current spread to other structures outside the cerebellum is unlike to produce functional effects. Copyright © 2013 International Federation of Clinical Neurophysiology. Published by Elsevier Ireland Ltd. All rights reserved.

  7. DC-magnetron sputtering of ZnO:Al films on (00.1)Al{sub 2}O{sub 3} substrates from slip-casting sintered ceramic targets

    Energy Technology Data Exchange (ETDEWEB)

    Miccoli, I., E-mail: ilio.miccoli@unisalento.it [Photovoltaics R and D Lab, Alfa Impianti S.r.l., Via Baden Powell, I-73044 Galatone, Lecce (Italy); Dipartimento di Ingegneria dell’Innovazione, Università del Salento, Via Monteroni, I-73100 Lecce (Italy); Spampinato, R.; Marzo, F. [Dipartimento di Ingegneria dell’Innovazione, Università del Salento, Via Monteroni, I-73100 Lecce (Italy); Prete, P. [Istituto per la Microelettronica e Microsistemi del CNR, Unità di Lecce, Via Monteroni, I-73100 Lecce (Italy); Lovergine, N. [Dipartimento di Ingegneria dell’Innovazione, Università del Salento, Via Monteroni, I-73100 Lecce (Italy)

    2014-09-15

    Highlights: • ZnO:Al was DC-sputtered on sapphire >350 °C by slip-casting sintered AZO target. • Films are highly (00.1)-oriented, smooth and transparent in the NIR–visible range. • Films growth rate decreases with temperature, while their grain size increases. • A high temperature reduction for sticking coefficients of impinging species is proved. • We prove that Thornton model does not apply to high-temperature DC-sputtered ZnO. - Abstract: High (>350 °C) temperature DC-sputtering deposition of ZnO:Al thin films onto single-crystal (00.1) oriented Al{sub 2}O{sub 3} (sapphire) substrates is reported, using a ultrahigh-density, low-resistivity and low-cost composite ceramic target produced by slip-casting (pressureless) sintering of ZnO–Al{sub 2}O{sub 3} (AZO) powders. The original combination of high-angle θ–2θ (Bragg–Brentano geometry) X-ray diffraction with low angle θ–2θ X-ray reflectivity (XRR) techniques allows us to define the AZO target composition and investigate the structural properties and surface/interface roughness of as-sputtered ZnO:Al films; besides, the growth dynamics of ZnO:Al is unambiguously determined. The target turned out composed of the sole wurtzite ZnO and spinel ZnAl{sub 2}O{sub 4} phases. X-ray diffraction analyses revealed highly (00.1)-oriented (epitaxial) ZnO:Al films, the material mean crystallite size being in the 13–20 nm range and increasing with temperature between 350 °C and 450 °C, while the film growth rate (determined via XRR measurements) decreases appreciably. XRR spectra also allowed to determine rms surface roughness <1 nm for present films and showed ZnO:Al density changes by only a few percent between 350 °C and 450 °C. The latter result disproves the often-adopted Thornton model for the description of the sputter-grown ZnO films and instead points out toward a reduction of the sticking coefficients of impinging species, as the main origin of film growth rate and grain size dependence

  8. DC resistance comparison between a current comparator bridge and the quantum Hall system at Inmetro

    Science.gov (United States)

    da Silva, M. C.; Carvalho, H. R.; Vasconcellos, R. T. B.

    2016-07-01

    This paper presents a comparison results between the Quantum Hall System (QHS) under development at the Quantum Electrical Metrology Laboratory (Lameq) and the current comparator calibration system, traceable to the Bureau International des Poids et Mesures (BIPM), at the Electrical Standardization Metrology Laboratory (Lampe), both part of the Electrical Metrology Division, at Inmetro. Comparisons were performed with 1 Ω, 10 Ω, 100 Ω, 1 kΩ and 10 kΩ resistors. The results obtained over two years of work are presented here, showing that the comparison contributed to improve the calibration systems of both Lampe and Lameq.

  9. DC current induced metal-insulator transition in epitaxial Sm0.6Nd0.4NiO3/LaAlO3 thin film

    Directory of Open Access Journals (Sweden)

    Haoliang Huang

    2014-05-01

    Full Text Available The metal-insulator transition (MIT in strong correlated electron materials can be induced by external perturbation in forms of thermal, electrical, optical, or magnetic fields. We report on the DC current induced MIT in epitaxial Sm0.6Nd0.4NiO3 (SNNO thin film deposited by pulsed laser deposition on (001-LaAlO3 substrate. It was found that the MIT in SNNO film not only can be triggered by thermal, but also can be induced by DC current. The TMI of SNNO film decreases from 282 K to 200 K with the DC current density increasing from 0.003 × 109 A•m−2 to 4.9 × 109 A•m−2. Based on the resistivity curves measured at different temperatures, the MIT phase diagram has been successfully constructed.

  10. Design, Assembly, and Commissioning of a Cryogenic DC Current Transformer Designed for Measuring Currents of up to 80 kA

    CERN Document Server

    Montenero, G; Bottura, L; Arpaia, P

    2015-01-01

    A new cryogenic dc current transformer (Cryo-DCCT) has recently been designed and assembled at CERN. The device, whose design is based on that of a high-accuracy 600 A market solution suitable for room temperature applications, is optimized for measuring currents of up to 80 kA and for operation at 4.2 K. The CryoDCCT has been conceived with the objective of preserving the metrological performance of the original commercial device in the new extended range of operation. For reducing the effect of interfering magnetic fields arising from test conditions, it incorporates ferromagnetic and MgB2 superconducting shields. In this paper, the design of the CryoDCCT and the results of the commissioning of the device at CERN are reported. The effectiveness of the current transducer is analysed and discussed. This new device will be used for measuring the secondary current of a 80 kA superconducting transformer feeding a sample of NbSn3 cable at the Facility for Research on Superconducting Cables (FRESCA) at CERN.

  11. Transport behavior of hairless mouse skin during constant current DC iontophoresis I: baseline studies.

    Science.gov (United States)

    Liddell, Mark R; Li, S Kevin; Higuchi, William I

    2011-04-01

    The fluxes of charged and nonionic molecules across hairless mouse skin (HMS) were induced by direct current iontophoresis and used to characterize the transport pathways of the epidermal membrane. Experimental data were used to determine permeability coefficients from which the effective pore radii (Rp) of the transport pathways were calculated. Permeants used in these experiments were nonionic permeants (urea, mannitol, and raffinose), monovalent cationic permeants (sodium, tetraethylammonium, and tetraphenylphosphonium ions), and monovalent anionic permeants (chloride, salicylate, and taurocholate ions). The Rp estimates obtained by the anionic permeant pairs were 49, 22, and 20 Å for the chloride/salicylate (Cl:SA), chloride/taurocholate (Cl:TC), and salicylate/taurocholate (SA:TC) pairs, respectively; with the cationic permeant pairs, the Rp values obtained were 19, 30, and 24 Å for the sodium/tetraethylammonium (Na:TEA), sodium/tetraphenylphosphonium (Na:TPP), and the tetraethylammonium/tetraphenylphosphonium (TEA:TPP) pairs, respectively. Rp estimates for HMS obtained from nonionic permeant experiments ranged from 6.7 to 13.4 Å. When plotted versus their respective diffusion coefficients, all of the permeability coefficients for the cationic permeants were greater than those of the anionic permeants. Additionally, the magnitudes of permeability coefficients determined in the current study with HMS were of the same order of magnitude as those previously determined in our laboratory using human epidermal membrane under similar iontophoresis conditions.

  12. Hysteresis losses in MgB{sub 2} superconductors exposed to combinations of low AC and high DC magnetic fields and transport currents

    Energy Technology Data Exchange (ETDEWEB)

    Magnusson, N., E-mail: niklas.magnusson@sintef.no [SINTEF Energy Research, NO-7465 Trondheim (Norway); Abrahamsen, A.B. [DTU Wind Energy, Technical University of Denmark, DK-4000 Roskilde (Denmark); Liu, D. [Electrical Power Processing Group, TU Delft, Mekelweg 4, NL-2628 CD Delft (Netherlands); Runde, M. [SINTEF Energy Research, NO-7465 Trondheim (Norway); Polinder, H. [Electrical Power Processing Group, TU Delft, Mekelweg 4, NL-2628 CD Delft (Netherlands)

    2014-11-15

    Highlights: • A method for calculating hysteresis losses in the low AC – high DC magnetic field and transport current range has been shown. • The method can be used in the design of wind turbine generators for calculating the losses in the generator DC rotor. • First estimates indicate tolerable current ripple in the 0.1% range for a 4 T DC MgB{sub 2} generator rotor coil. - Abstract: MgB{sub 2} superconductors are considered for generator field coils for direct drive wind turbine generators. In such coils, the losses generated by AC magnetic fields may generate excessive local heating and add to the thermal load, which must be removed by the cooling system. These losses must be evaluated in the design of the generator to ensure a sufficient overall efficiency. A major loss component is the hysteresis losses in the superconductor itself. In the high DC – low AC current and magnetic field region experimental results still lack for MgB{sub 2} conductors. In this article we reason towards a simplified theoretical treatment of the hysteresis losses based on available models in the literature with the aim of setting the basis for estimation of the allowable magnetic fields and current ripples in superconducting generator coils intended for large wind turbine direct drive generators. The resulting equations use the DC in-field critical current, the geometry of the superconductor and the magnitude of the AC magnetic field component as parameters. This simplified approach can be valuable in the design of MgB{sub 2} DC coils in the 1–4 T range with low AC magnetic field and current ripples.

  13. Ideas on DC-DC Converters for Delivery of Low Voltage and High Currents for the SLHC / ILC Detector Electronics in Magnetic field and Radiation environments

    CERN Document Server

    Dhawan, Satish; Neal, H; Sumner, R; Weber, M; Weber, R

    2007-01-01

    For more efficient power transport to the electronics embedded inside large colliding beam detectors, we explore the feasibility of supplying 48 Volts DC and using local DCDC conversion to 2 V (or lower, depending upon on the lithography of the embedded electronics) using switch mode regulators located very close to the front end electronics. These devices will be exposed to high radiation and high magnetic fields, 10 – 100 Mrads and 2 - 4 Tesla at the SLHC, and 20 Krads and 6 Tesla at the ILC.

  14. Chemical mechanisms inducing a dc current measured in the flowing post-discharge of an RF He-O2 plasma torch

    CERN Document Server

    Dufour, Thierry; Vandencasteele, N; Reniers, F

    2016-01-01

    The post-discharge of an RF plasma torch supplied with helium and oxygen gases is characterized by mass spectrometry, optical emission spectroscopy and electrical measurements. We have proved the existence of a dc current in the post-discharge (1--20 A), attributed to the Penning ionization of atmospheric nitrogen and oxygenated species. The mechanisms ruling this dc current are investigated through experiments in which we discuss the influence of the O2 flow rate, the He flow rate and the distance separating the plasma torch from a material surface located downstream.

  15. Effects of Transformer DC Bias and the Relationship Between UHVDC Grounding Current and Grounding Resistances%变压器直流偏磁及其与接地电阻关系的研究

    Institute of Scientific and Technical Information of China (English)

    蒋伟; 吴广宁; 肖华

    2008-01-01

    Recently years, UHVDC transmission system is paid more attention to in the field of China's power system. It takes key part in the China electrical power development stratagem. But, many problems are caused by UHVDC system,such as DC bias, corrosion of metal underground and so on. DC bias is harm to the transformers nearby UHVDC grounding polar. In this paper, the influences of DC grounding current on transformer are introduced and some suggestions of DC bias solution were provided. And, the relationship between UHVDC Grounding Current and grounding Resistance of Substation was analyzed. Firstly, two-part network circuit was used to equivalent the grounding circuit. Then, an analysis of rules was done between DC bias current and grounding resistance. Finally, the conclusion is given that DC bias current rises fast as DC grounding resistance or AC grounding resistance rises. It drops when resistance of AC transmission line or interaction resistance between DC grounding system and AC grounding system rises. Decreasing AC grounding resistance and DC grounding resistance is important to restrain DC bias current. Increasing resistance of AC transmission line such as adding resistance into transformer neutral-point grounding is a useful way to limit DC bias current.

  16. High critical current density YBCO films and fabrication of dc-SQUIDs

    CERN Document Server

    Kuriki, S; Kawaguchi, Y; Matsuda, M; Otowa, T

    2002-01-01

    In order to improve the sensitivity of SQUID magnetometers made of high-T sub c films, we have studied the conditions of pulsed-laser deposition of YBCO films. Among the different deposition parameters examined, extensive degassing of the vacuum chamber before and precise control of the substrate temperature during the film deposition were found effective for obtaining high critical temperature T sub c and high critical current density J sub c. It was also found that the residual-resistance ratio has a clear correlation with J sub c , indicating that it can be a good, and easy to measure, index of the film quality. Films having T sub c approx 89-90 K and J sub c >= 5x10 sup 6 A cm sup - sup 2 at 77 K were used to fabricate SQUIDs without a pickup loop. Grain-boundary junctions formed on bicrystal substrates with a 30 deg. misorientation angle exhibited I sub c R sub n values of more than 100 mu V at 77 K. The well-known scaling behaviour of the relation I sub c R sub n propor to (J sup G sup B sub c) sup 1 su...

  17. Analysis of heavy particle processes in low current dc discharge in water vapor

    Science.gov (United States)

    Sivos, Jelena; Maric, Dragana; Skoro, Nikola; Malovic, Gordana; Petrovic, Zoran Lj

    2016-09-01

    Results presented in our recent paper show that heavy particles - positive ions and fast neutrals (created in charge transfer processes) - can have significant contribution to the processes of excitation at moderate and high reduced electric fields (E / N) . In the case of water vapor, hydrogen ions and fast atoms are the most probable candidates, as the lightest products in water vapor discharges. In order to identify dominant heavy species in water vapor discharge, we analyzed discharge parameters in low current Townsend regime. Based on the model developed by Phelps and coworkers in 1993. we were able to estimate transit time of ions from experimentally determined frequency of damped oscillations and parameters of electrical circuit. Furthermore, we compared calculated transit times with transit times of hydrogen ions (H+, H2+,H3+).Initial analysis indicates that H2+is dominant ion in the range of moderate E / N ( 2 kTd). Calculations were done for the discharge initiated at electrode gap of 1.1 cm and pressure (p) x gap (d) of 0.6 Torrcm, which corresponds to the conditions of the minimum of Paschen curve. In the next step we will extend the analysis to wider range operating conditions. This work is supported by the Serbian MESTD under project numbers ON 171037 and III 41011.

  18. Optical properties and structures of silver thin films deposited by magnetron sputtering with different thicknesses

    Institute of Scientific and Technical Information of China (English)

    Xilian Sun; Ruijin Hong; Haihong Hou; Zhengxiu Fan; Jianda Shao

    2006-01-01

    A series of thin Ag films with different thicknesses grown under identical conditions are analyzed by means of spectrophotometer. From these measurements the values of refractive index and extinction coefficient are calculated. The films are deposited onto BK7 glass substrates by direct current (DC) magnetron sputtering. It is found that the optical properties of the Ag films can be affected by films thickness.Below critical thickness of 17 nm, which is the thickness at which Ag films form continuous films, the optical properties and constants vary significantly with thickness increasing and then tend to a stable value up to about 40 nm. At the same time, X-ray diffraction measurement is carried out to examine the microstructure evolution of Ag films as a function of films thickness. The relation between optical properties and microstructure is discussed.

  19. The Structure and Properties of Pulsed dc Sputtered Nanocrystalline NbN Coatings for Proton Exchange Membrane Fuel Cell.

    Science.gov (United States)

    Chun, Sung-Yong

    2016-02-01

    Niobium nitride coatings for the surface modified proton exchange membrane fuel cells with various pulse parameters have been prepared using dc (direct current) and asymmetric-bipolar pulsed dc magnetron sputtering. The pulse frequency and the duty cycle were varied from 5 to 50 kHz and 50 to 95%, respectively. The deposition rate, grain size and resistivity of pulsed dc sputtered films were decreased when the pulse frequency increased, while the nano hardness of niobium nitride films increased. We present in detail coatings (e.g., deposition rate, grain size, prefer-orientation, resistivity and hardness). Our studies show that niobium nitride coatings with superior properties can be prepared using asymmetric-bipolar pulsed dc sputtering.

  20. Surface functionalization of nanostructured LaB{sub 6}-coated Poly Trilobal fabric by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Yan, E-mail: wuyanchn@hotmail.com [Mechanical and Electrical Engineering Branch, Jiaxing Nanyang Polytechnic Institute, Jiaxing 314003 (China); Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials (Ministry of Education), Shandong University, Jinan 250061 (China); Zhang, Lin, E-mail: zhanglin2007@sdu.edu.cn [Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials (Ministry of Education), Shandong University, Jinan 250061 (China); Min, Guanghui, E-mail: ghmin@sdu.edu.cn [Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials (Ministry of Education), Shandong University, Jinan 250061 (China); Yu, Huashun; Gao, Binghuan; Liu, Huihui; Xing, Shilong; Pang, Tao [Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials (Ministry of Education), Shandong University, Jinan 250061 (China)

    2016-10-30

    Highlights: • Nanostructured LaB{sub 6} films were deposited on flexible textile substrates by dc magnetron sputtering. • The pronounced influence of the working pressure on the morphologies and optical properties of LaB{sub 6} films has been revealed. • The concept of Ultraviolet Protection Factor (UPF) was employed and LaB{sub 6}-coated PET textiles with ultraviolet protection ability were obtained. - Abstract: Nanostructured LaB{sub 6} films were deposited on flexible Poly Trilobal substrates (PET textiles) through direct current magnetron sputtering in order to broaden its applications and realize surface functionalization of polyester fabrics. Characterizations and performances were investigated by employing a scanning electron microscope (SEM), Fourier transformation infrared spectroscopy (FT-IR) and ultraviolet-visible (UV–vis) spectrophotometer. Ultraviolet Protection Factor (UPF) conducted by the integral conversion was employed to measure the ultraviolet protection ability. As expected, the growth of LaB{sub 6} film depending on the pressure variation enhanced UV-blocking ability (UPF rating at 30.17) and absorption intensity of the textiles.

  1. 一种适用于Buck型DC/DC变换器的高精度片上电流采样电路%Integrated High-accuracy On-chip Current Sensing Circuit for Current-mode Control CMOS DC-DC Buck Converter

    Institute of Scientific and Technical Information of China (English)

    吴了; 郭苗苗

    2011-01-01

    Current sensing circuit is one of the most important component parts of current-control DC/DC convertor,its accuracy and response speed acquires more and more attention.We proposed a novel current sensing circuit in this paper, which does not use the operational amplifier, simplify the circuit structure, reducing power consumption, at the same time, the introduction of the compensation current further improves the sensing accuracy.Designed the circuit based on 0.5 μm CMOS process, HSPICE simulation results show that the circuit has a high sensing accuracy up to 99.9%, and as workload, input voltage and temperature changes, the fluctuation of sensing accuracy of the circuit is very small.%电流采样电路作为电流控制的DC/DC变换器重要组成部件之一,其精度和响应速度已受到越来越高的重视.提出的电流采样电路没有使用运算放大器,简化了电路结构,降低了功耗.同时,电路中引入的补偿电流进一步提高了采样的精度.基于0.5μm CMOS工艺实现该电路,HSPICE模拟仿真结果表明该电路具有较高的采样精度,最高可达99.9%,且在负载、输入电压、温度变化时,采样精度波动很小.

  2. In vivo transungual iontophoresis: effect of DC current application on ionic transport and on transonychial water loss.

    Science.gov (United States)

    Dutet, Julie; Delgado-Charro, M Begoña

    2009-12-03

    The potential use of iontophoresis to improve drug penetration into the nail has been suggested. However, there is little information concerning transungual iontophoresis in vivo. This work describes the application of transungual iontophoresis to six healthy human volunteers in order to investigate key issues such as the effect of current application on ionic transport and on transonychial water loss (TOWL), and the magnitude of the voltages required for a practical use of the technique. Each volunteer participated in three experiments: passive control, 0.2 mA anodal transungual iontophoresis and 0.2 mA cathodal transungual iontophoresis. A commercial electrode on a skin site was used to complete the electrical circuit. The outward transungual extraction of sodium and chloride ions by passive diffusion and iontophoresis was quantified. Iontophoresis enhanced chloride and sodium transport approximately 8 and 27 fold respectively compared to passive diffusion. Sodium transport numbers were measured to be t(Na+)=0.51+/-0.11. TOWL was used as a potential marker of nail damage and hydration. Basal TOWL was measured before each experiment, and the return to baseline values was monitored for 1h after the treatment (passive or iontophoresis application) was finished. TOWL was increased after both iontophoretic and passive experiments and typically returned to baseline values in 1h post-treatment. The voltage of the nail-to-skin circuit was monitored during iontophoresis and compared to those observed in a skin-to-skin circuit. Nail-to-skin circuit voltages were generally approximately 50 V when the current was started and dropped fast to 20-30 V, a value comparable to that observed in the skin-to-skin circuit. On the whole, the clear enhancement of ionic transport observed, the feedback from volunteers, the small effects in TOWL, and the magnitude of voltages indicate that nail DC current iontophoresis is feasible and probably a safe technique.

  3. Neutral-point current modeling and control for Neutral-Point Clamped three-level converter drive with small DC-link capacitors

    DEFF Research Database (Denmark)

    Maheshwari, Ram Krishan; Munk-Nielsen, Stig; Busquets-Monge, Sergio

    2011-01-01

    A Neutral-Point-Clamped (NPC) three-level inverter with small DC-link capacitors is presented in this paper. This inverter requires zero average neutral-point current for stable neutral-point potential. A simple carrier based modulation strategy is proposed for achieving zero average neutral-poin...

  4. Elimination of DC-Link Current Ripple for Modular Multilevel Converters With Capacitor Voltage-Balancing Pulse-Shifted Carrier PWM

    DEFF Research Database (Denmark)

    Deng, Fujin; Chen, Zhe

    2015-01-01

    The modular multilevel converter (MMC) is attractive for medium- and high-power applications because of its high modularity, availability, and power quality. In this paper, the current ripple on the dc link of the three-phase MMC derived from the phase-shifted carrier-based pulse-width modulation...

  5. BN coatings deposition by magnetron sputtering of B and BN targets in electron beam generated plasma

    Science.gov (United States)

    Kamenetskikh, A. S.; Gavrilov, N. V.; Koryakova, O. V.; Cholakh, S. O.

    2017-05-01

    Boron nitride coatings were deposited by reactive pulsed magnetron sputtering of B and BN targets (50 kHz, 10 µs for B; 13.56 MHz for BN) at 2-20 mA/cm2 ion current density on the substrate. The effect of electron beam generated plasma on characteristics of magnetron discharge and phase composition of coatings was studied.

  6. Design of DC/DC Converter Controlled by Limited Current and Constant Off-Time%采用限制电流和固定分时控制的DC/DC转换器设计

    Institute of Scientific and Technical Information of China (English)

    江旭明; 马勋; 龚敏; 赵春莉; 代军

    2007-01-01

    为了使设计的DC/DC转换器在宽负载范围内能保持高效率和高性能的输出电压,基于典型脉冲频率调制转换器拓扑结构,提出一种在不同升压阶段,由可调整的限制电流和固定分时控制的DC/DC转换器芯片的设计.本设计基于标准的0.6 μm BiCMOS混合信号工艺,采用Cadence/Spectre仿真,最终实现转换器效率高于80%,最高为20 V的可调节输出电压,并且其相对纹波系数小于1%.

  7. Photoelectric Properties of Mo Doped TiO2 Thin Films Deposited by DC Reactive Magnetron Sputtering%直流反应磁控溅射制备的Mo掺杂TiO2薄膜的光电特性

    Institute of Scientific and Technical Information of China (English)

    颜秉熙; 罗胜耘; 沈杰

    2012-01-01

    Nanocrystalline TiO? Thin films doped with different concentrations of Mo were deposited by direct current (DC) reactive magnetron sputtering. The influence of Mo on surfaces, crystal structures, the valence states of elements and the absorption band of Mo doped TiO2 films were characterized by means of atomic force microscopy (AFM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and Ultraviolet-visible spectroscopy (UV-Vis). To investigate the photoelectric characteristic of ITO (indium tin oxide)/Mo-TiO2 electrodes, a series of cyclic voltammetry experiments were conducted. The results indicate that an appropriate amount of Mo atoms, observed as Mo6* and Mo5* by XPS, could inhibit the crystal growth of particles, enhance the surface roughness of the Mo doped TiO2 thin film, and bring about a remarkable red shift of the absorption spectra. As the concentration of Mo increased, the energy gap declined at first until the amount of doped Mo eventually reached 3.6% (n(Mo)/n(Ti)), when a blue shift of spectra resulted and the energy gap grew wider. The sample doped with 0.9% Mo was irradiated with a Xe lamp and showed the highest photocurrent, which continued to increase with increasing voltage exerted on the anode. An increase in Mo concentration resulted in a decrease in photocurrent. Compared to the pure TiO2 film, the sample with 3.6% Mo had a much lower photocurrent. Our experiments demonstrate that Mo doping, when the concentration was controlled under a relatively low limit, brought about a significant improvement of the photoelectric properties of the TiO3 films. The highest photocurrent observed is 2.4 times that of the sample with no Mo doping.%通过直流反应磁控溅射制备了不同Mo掺杂量的Mo-TiO2薄膜.用原子力显微镜(AFM)、X射线衍射(XRD)仪、X射线光电子能谱(XPS)仪、紫外-可见(UV-Vis)分光光度计详细研究了Mo掺杂量对薄膜表面形貌、晶体结构、元素价态及吸收带边的影响.用

  8. The Study of MMC Topologies and Their DC Fault Current Blocking Capacities in DC Grid%直流电网MMC拓扑及其直流故障电流阻断方法研究

    Institute of Scientific and Technical Information of China (English)

    吴婧; 姚良忠; 王志冰; 李琰; 杨波; 曹远志

    2015-01-01

    Incapability of blocking DC fault current is an inherent defect of typical half bridge sub module based modular multilevel converter (HBSM-MMC), which seriously affects its application in DC grid. Thus, the study on the topology and control technology of MMC with DC fault current blocking capacity is of great significance. This paper first introduced the topology and operation principle of typical HBSM-MMC, described the fault characteristics of its DC side and influence mechanism, analyzed the existing DC side fault clearing methods at present and their advantages and disadvantages, and pointed out that self-clearing by converter based on its topology is an effective method to solve this problem. Through technical survey, this paper studied and presented three types of optimized MMC topology and their DC fault isolation and current blocking mechanism, then compared the indexes of them and analyzed their merits and drawbacks of function realization, thus it provides technical reference for further study and application of MMC technology in multi-terminal DC transmission system and DC grid with multi voltage levels.%难于阻断直流侧故障电流是典型半桥模块化多电平换流器(half bridge sub module based modular multilevel converter,HBSM-MMC)的固有缺陷,严重影响该类型换流器在直流电网中的应用,因此开展具有直流故障电流阻断能力的 MMC 拓扑及控制技术研究意义重大.首先介绍典型HBSM-MMC的拓扑结构及工作原理,阐述其直流侧故障特性及影响机理,对比分析现阶段存在的直流侧故障清除方法及优缺点,指出基于换流器拓扑的自清除方法是解决直流侧故障电流阻断问题的最有效方法之一;通过对国内外MMC拓扑的调研,分别详细研究3类MMC优化拓扑结构及其直流故障隔离和电流阻断机理,对比分析3类优化拓扑的各项参数和功能实现的优缺点,为后续MMC技术在多端直流输电系统和多电压等级直流

  9. Controlled formation of anatase and rutile TiO2 thin films by reactive magnetron sputtering

    NARCIS (Netherlands)

    Rafieian, Damon; Ogieglo, Wojciech; Savenije, Tom; Lammertink, Rob G.H.

    2015-01-01

    We discuss the formation of TiO2 thin films via DC reactive magnetron sputtering. The oxygen concentration during sputtering proved to be a crucial parameter with respect to the final film structure and properties. The initial deposition provided amorphous films that crystallise upon annealing to an

  10. Control algorithm for the inverter fed induction motor drive with DC current feedback loop based on principles of the vector control

    Energy Technology Data Exchange (ETDEWEB)

    Vuckovic, V.; Vukosavic, S. (Electrical Engineering Inst. Nikola Tesla, Viktora Igoa 3, Belgrade, 11000 (Yugoslavia))

    1992-01-01

    This paper brings out a control algorithm for VSI fed induction motor drives based on the converter DC link current feedback. It is shown that the speed and flux can be controlled over the wide speed and load range quite satisfactorily for simpler drives. The base commands of both the inverter voltage and frequency are proportional to the reference speed, but each of them is further modified by the signals derived from the DC current sensor. The algorithm is based on the equations well known from the vector control theory, and is aimed to obtain the constant rotor flux and proportionality between the electrical torque, the slip frequency and the active component of the stator current. In this way, the problems of slip compensation, Ri compensation and correction of U/f characteristics are solved in the same time. Analytical considerations and computer simulations of the proposed control structure are in close agreement with the experimental results measured on a prototype drive.

  11. Origin of dc voltage in type II superconducting flux pumps: field, field rate of change, and current density dependence of resistivity

    Science.gov (United States)

    Geng, J.; Matsuda, K.; Fu, L.; Fagnard, J.-F.; Zhang, H.; Zhang, X.; Shen, B.; Dong, Q.; Baghdadi, M.; Coombs, T. A.

    2016-03-01

    Superconducting flux pumps are the kind of devices which can generate direct current into superconducting circuit using external magnetic field. The key point is how to induce a dc voltage across the superconducting load by ac fields. Giaever (1966 IEEE Spectr. 3 117) pointed out flux motion in superconductors will induce a dc voltage, and demonstrated a rectifier model which depended on breaking superconductivity. van de Klundert et al (1981 Cryogenics 21 195, 267) in their review(s) described various configurations for flux pumps all of which relied on inducing the normal state in at least part of the superconductor. In this letter, following their work, we reveal that a variation in the resistivity of type II superconductors is sufficient to induce a dc voltage in flux pumps and it is not necessary to break superconductivity. This variation in resistivity is due to the fact that flux flow is influenced by current density, field intensity, and field rate of change. We propose a general circuit analogy for travelling wave flux pumps, and provide a mathematical analysis to explain the dc voltage. Several existing superconducting flux pumps which rely on the use of a travelling magnetic wave can be explained using the analysis enclosed. This work can also throw light on the design and optimization of flux pumps.

  12. Bias-magnetron sputtering of tungsten carbide coatings on steel; Bias-Magnetron Sputtern von Wolframkarbid-Schichten auf Stahl

    Energy Technology Data Exchange (ETDEWEB)

    Gubisch, M.; Spiess, L.; Romanus, H.; Schawohl, J.; Knedlik, C. [Technische Universitaet Ilmenau, Institut fuer Werkstofftechnik/ Zentrum fuer Mikro- und Nanotechnologien (ZMN), Ilmenau (Germany)

    2004-11-01

    The influence of bias voltage between 0 V to -800 V on the properties of dc and rf magnetron sputtered tungsten carbide coatings with 1 {mu}m thickness on cold work steel 90MnCrV8 were determined. The coatings were analysed with SEM, AFM, EDX, XRD and micro hardness tester. The morphology, the chemical composition, the phase transformation and the hardness of the deposited layers were appropriated. Non-stoechiometric cubic phase of tungsten carbide WC{sub 1-x} with <100> preferred orientation formed by non reactive magnetron sputtering without ion bombardment. Chemical composition, crystallinity, preferred orientation, morphology and phases are influence by variation of bias voltage. These changes in coating properties results in significant variation of hardness between 8 GPa and 20 GPa. (Abstract Copyright [2004], Wiley Periodicals, Inc.) [German] In dieser Arbeit wird der Einfluss der Biasspannung im Bereich von 0 V bis -800 V auf die Eigenschaften von 1 {mu}m dicken DC und RF Magnetron gesputterten Wolframkarbidschichten auf niedriglegierten Kaltarbeitsstahl 90MnCrV8 untersucht. Die Schichten wurden mittels REM, EDX, AFM, Universalhaertepruefgeraet und XRD hinsichtlich der wichtigsten Schichteigenschaften wie Morphologie, Phasenausbildung, Vorzugsorientierung, Universalhaerte und chemischer Zusammensetzung charakterisiert. Ohne zusaetzlichen Ionenbeschuss bildet sich beim nichtreaktiven Magnetron Sputtern die nicht stoechiometrische kubische Phase des Wolframkarbids WC{sub 1-x} mit einer <100>-Orientierung aus. In Abhaengigkeit der Biasspannung wird die chemischen Zusammensetzung, Kristallinitaet, Vorzugsorientierung, Morphologie und die Phasenausbildung beeinflusst. Die Veraenderungen der genannten Schichteigenschaften fuehrten zu signifikanten Haerteaenderungen im Bereich von 8 GPa und 20 GPa. (Abstract Copyright [2004], Wiley Periodicals, Inc.)

  13. DC to DC converters: operation; Hacheurs: fonctionnement

    Energy Technology Data Exchange (ETDEWEB)

    Bernot, F. [Ecole d' Ingenieurs de Tours, 37 (France)

    2002-05-01

    This article deals with pulse width modulation (PWM) and pulse position modulation (PPM) DC to DC converters. A tri-phase PWM converter is made of 6 simple DC/DC converters grouped together into 3 reversible converters of the same type: 1 - single-quadrant voltage lowering converters (hydraulic analogy, study with ideal elements, full scheme with input and output filters); 2 - single-quadrant voltage raising converters (hydraulic analogy, operation); 3 - two quadrants reversible converters (structure construction, quadrants of operation, reversible converter connected to a DC motor); 4 - four-quadrants reversible converters; 5 - other converters structure (current converters and converters with intermediate storage, asymmetrical converters, converters with capacitive storage, insulated converters, resonating converters, status); 6 - conclusion. (J.S.)

  14. Are the argon metastables important in high power impulse magnetron sputtering discharges?

    Energy Technology Data Exchange (ETDEWEB)

    Gudmundsson, J. T., E-mail: tumi@hi.is [Department of Space and Plasma Physics, School of Electrical Engineering, KTH Royal Institute of Technology, SE-100 44 Stockholm (Sweden); Science Institute, University of Iceland, Dunhaga 3, IS-107 Reykjavik (Iceland); Lundin, D.; Minea, T. M. [Laboratoire de Physique des Gaz et Plasmas - LPGP, UMR 8578 CNRS, Université Paris-Sud, 91405 Orsay Cedex (France); Stancu, G. D. [CentraleSupélec, Grande Voie des Vignes, 92295 Chatenay-Malabry Cedex (France); CNRS, UPR 288 Laboratoire EM2C, Grande Voie des Vignes, 92295 Chatenay-Malabry Cedex (France); Brenning, N. [Department of Space and Plasma Physics, School of Electrical Engineering, KTH Royal Institute of Technology, SE-100 44 Stockholm (Sweden); Plasma and Coatings Physics Division, IFM-Materials Physics, Linköping University, SE-581 83 Linköping (Sweden)

    2015-11-15

    We use an ionization region model to explore the ionization processes in the high power impulse magnetron sputtering (HiPIMS) discharge in argon with a titanium target. In conventional dc magnetron sputtering (dcMS), stepwise ionization can be an important route for ionization of the argon gas. However, in the HiPIMS discharge stepwise ionization is found to be negligible during the breakdown phase of the HiPIMS pulse and becomes significant (but never dominating) only later in the pulse. For the sputtered species, Penning ionization can be a significant ionization mechanism in the dcMS discharges, while in the HiPIMS discharge Penning ionization is always negligible as compared to electron impact ionization. The main reasons for these differences are a higher plasma density in the HiPIMS discharge, and a higher electron temperature. Furthermore, we explore the ionization fraction and the ionized flux fraction of the sputtered vapor and compare with recent experimental work.

  15. Software Development for DC Current Distribution in AC Power Grid%交流电网直流电流分布仿真软件的开发

    Institute of Scientific and Technical Information of China (English)

    汪发明; 张露; 全江涛; 谢齐家; 潘卓洪; 文习山

    2012-01-01

    为量化分析高压直流输电入地电流(简称直流电流)在交流电网内的分布,提出了直流分布的完整理论分析模型,实现了变电站地下网络的Thevenin等效;借助潮流计算数据取得交流电网的接线信息,开发了潮流计算接口,解决了现代大型交流电网接线运行方式的数据输入问题。运用随机模拟试验方法探讨交流电网直流分布的机理,分析了交流电网内的直流电流的分布规律:交流电网规模越大直流电流分布越广;杆塔-避雷线系统的存在会使交流电网直流电流分布密集;采用抑制措施后交流电网局部直流电流分布可能更加密集,但直流电流分布总量下降。仿真软件适用于大型交流电网直流电流分布的预测计算和抑制措施的仿真评估,可以为更好地分析、预报和抑制直流电流分布及其不良影响提供参考。%In order to analyze the HVDC transmission's earth-return current distribution in AC power grids,an improved theoretical model is set up realizing the Thevenin equivalence of underground networks.A power flow calculation interface is developed to load data of the connection of modern large-scale AC grid.Then the random test method was used to summarize the rules of DC current distribution.The results are gained as follows:the larger the AC grid,the more the DC current distribution is caused;the DC current distribution is increased by towers and overhead ground wires;though the local DC current distribution is increased,the total DC current distribution is suppressed by mitigation methods.The simulation software is suitable for DC current distribution computation and evaluating the mitigation methods,and it provides reference for analysis,forecast,mitigation,and adverse effects of DC current distributions.

  16. 一种基于Buck软换流型DC-DC电路脉冲TIG焊机%A type of pulse TIG welding power supply based on Buck DC-DC circuit integrated soft current-change technology

    Institute of Scientific and Technical Information of China (English)

    汪殿龙; 张志洋; 李亚博

    2014-01-01

    针对传统逆变式脉冲TIG焊机在冷修补焊接时修复精度低、热输入量大、零部件的热变形量大等缺点,设计了一种基于Buck软换流型DC-DC主电路的脉冲TIG焊机,控制电路可以实现焊接脉冲电流、脉冲频率、脉冲时间的调节,并输出连续脉冲群.实验结果表明,软换相电路有效降低了开关损耗和电压电流尖峰;控制特性较好,脉冲电流上升和下降时间小,输出电流平稳.该焊机实现了脉冲电流、脉冲时间、脉冲频率控制精确,适合于低热输入量时的冷修补焊接场合.

  17. Magnetoimpedance effect of the Ni80Fe20/Cu composite wires: The influence of DC current imposed on the Cu base

    Directory of Open Access Journals (Sweden)

    Delu Chen

    2014-06-01

    Full Text Available In this paper, the copper composite wires of 75 μm in diameter with a sputtered layer of Ni80Fe20 permalloy were prepared, with a DC current applied to the basal Cu terminals during the fabrication process. The influence of the DC current on the magnetic configuration and Magneto-Impedance (MI effect was studied. The results indicate that both the current amplitude and actuation duration have significant effect on the magnetic properties of the Ni80Fe20 layer. With appropriate current applied, the induced magnetic field leads to a circumferential magnetic domain structure and reduces significantly the equivalent anisotropy field of Ni80Fe20 layer. Then, the GMI ratio of the composite wires was significantly increased. A maximum GMI of 194.8% can be reached when the current was fixed at 100 mA and the Ni80Fe20 thickness is 780 nm. If the Ni80Fe20 thickness is above 780 nm, the coercivity of the coating layer increases while the GMI ratio of the composite wire reduces, since the magnetic anisotropy of the Ni80Fe20 layer varies from circumferential to longitudinal. The results were explained combining the thermal and magnetic effects of current.

  18. Prediction of DC current flow between the Otjiwarongo and Katima Mulilo regions, using 3D DC resistivity forward modelling and magnetotelluric and audio-magnetotelluric data recorded during SAMTEX

    Science.gov (United States)

    Share, P.; Jones, A. G.; Muller, M. R.; Miensopust, M. P.; Khoza, D. T.; Fourie, S.; Webb, S. J.; Thunehed, H.

    2009-12-01

    hypothesized that the return path of DC current, flowing along the path of least resistance between the two electrodes, is most likely to lie somewhere within, or in the vicinity of, the DMB. To obtain a better understanding of the current flow we propose using geological information, previous results of studies of the conductivity of the DMB and surrounding regions and 2D and 3D inversion results from the AMT and MT data recorded during SAMTEX in northern Botswana and Namibia, as input to a 3D DC resistivity forward modelling code, and to try to predict the return path that the DC current will follow.

  19. DC injection into low voltage AC networks

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2005-07-01

    This report summarises the results of a study investigating the impact of levels of injected DC current injections on a low voltage AC distribution network systems in order to recommend acceptable limits of DC from microgeneration. Relevant literature is reviewed, and the impact of DC levels in distribution transformers, transformer modelling, and instrumental transformers are discussed. The impact of DC in residual current devices (RCD) and in domestic electricity watt hour meters is examined along with DC enhanced corrosion, corrosion failure, and the measurement of DC current injection. Sources of DC injection outlined include DC from computer power supplies, network faults, geomagnetic phenomena, lighting circuits/dimmers, and embedded generators.

  20. Detection of DC currents and resistance measurements in longitudinal spin Seebeck effect experiments on Pt/YIG and Pt/NFO

    Science.gov (United States)

    Meier, Daniel; Kuschel, Timo; Meyer, Sibylle; Goennenwein, Sebastian T. B.; Shen, Liming; Gupta, Arunava; Schmalhorst, Jan-Michael; Reiss, Günter

    2016-05-01

    In this work we investigated thin films of the ferrimagnetic insulators Y 3Fe5O12 and NiFe2O4 capped with thin Pt layers in terms of the longitudinal spin Seebeck effect (LSSE). The electric response detected in the Pt layer under an out-of-plane temperature gradient can be interpreted as a pure spin current converted into a charge current via the inverse spin Hall effect. Typically, the transverse voltage is the quantity investigated in LSSE measurements (in the range of μV). Here, we present the directly detected DC current (in the range of nA) as an alternative quantity. Furthermore, we investigate the resistance of the Pt layer in the LSSE configuration. We found an influence of the test current on the resistance. The typical shape of the LSSE curve varies for increasing test currents.

  1. Detection of DC currents and resistance measurements in longitudinal spin Seebeck effect experiments on Pt/YIG and Pt/NFO

    Directory of Open Access Journals (Sweden)

    Daniel Meier

    2016-05-01

    Full Text Available In this work we investigated thin films of the ferrimagnetic insulators Y 3Fe5O12 and NiFe2O4 capped with thin Pt layers in terms of the longitudinal spin Seebeck effect (LSSE. The electric response detected in the Pt layer under an out-of-plane temperature gradient can be interpreted as a pure spin current converted into a charge current via the inverse spin Hall effect. Typically, the transverse voltage is the quantity investigated in LSSE measurements (in the range of μV. Here, we present the directly detected DC current (in the range of nA as an alternative quantity. Furthermore, we investigate the resistance of the Pt layer in the LSSE configuration. We found an influence of the test current on the resistance. The typical shape of the LSSE curve varies for increasing test currents.

  2. Determination of torque speed current characteristics of a brushless DC motor by utilizing back-EMF of non-energized phase

    Science.gov (United States)

    Jang, G. H.; Yeom, J. H.; Kim, M. G.

    2007-03-01

    This paper presents a method to determine the torque constant and the torque-speed-current characteristics of a brushless DC (BLDC) motor by utilizing back-EMF variation of nonenergized phase. It also develops a BLDC motor controller with a digital signal processor (DSP) to monitor its current, voltage and speed in real time. Torque-speed-current characteristics of a BLDC motor are determined by using the proposed method and the developed controller. They are compared with the torque-speed-current characteristics measured by dynamometer experimentally. This research shows that the proposed method is an effective method to determine the torque constant and the torque-speed-current characteristics of the BLDC motor without using dynamometer.

  3. Determination of torque-speed-current characteristics of a brushless DC motor by utilizing back-EMF of non-energized phase

    Energy Technology Data Exchange (ETDEWEB)

    Jang, G.H. [Department of Mechanical Engineering, Hanyang University, 17 Haengdangdong, Seongdonggu, Seoul 133-791 (Korea, Republic of)]. E-mail: ghjang@hanyang.ac.kr; Yeom, J.H. [Department of Mechanical Engineering, Hanyang University, 17 Haengdangdong, Seongdonggu, Seoul 133-791 (Korea, Republic of); Kim, M.G. [Department of Mechanical Engineering, Hanyang University, 17 Haengdangdong, Seongdonggu, Seoul 133-791 (Korea, Republic of)

    2007-03-15

    This paper presents a method to determine the torque constant and the torque-speed-current characteristics of a brushless DC (BLDC) motor by utilizing back-EMF variation of nonenergized phase. It also develops a BLDC motor controller with a digital signal processor (DSP) to monitor its current, voltage and speed in real time. Torque-speed-current characteristics of a BLDC motor are determined by using the proposed method and the developed controller. They are compared with the torque-speed-current characteristics measured by dynamometer experimentally. This research shows that the proposed method is an effective method to determine the torque constant and the torque-speed-current characteristics of the BLDC motor without using dynamometer.

  4. Up-scaled Teer-UDP850/4 Unbalanced Magnetron Deposition System Used for Mass-Production of CrTiAlN Hard Coatings

    Institute of Scientific and Technical Information of China (English)

    ZHANG Guo-jun; YANG Shi-cai; JIANG Bai-ling; BAI Li-jing; CHEN Di-chun; WEN Xiao-bin; TEER D.G.

    2004-01-01

    Up-scaled deposition process of Teer-UDP850/4 has been established and used for massive production of CrTiAlN hard coatings in applications of anti-wear, cutting and forming tools. This deposition system uses four magnetrons that are arranged by unbalanced magnets to form closed magnetic field enabling the system running in high current density.Elemental metals of Cr, Ti and Al are used as the target materials which are co-deposited with nitrogen forming multialloy nitride, nanoscale multi-layer or superlattice hard coatings. The substrate turntable is designed as planet rotation mechanism with three folds so that components or tools with complicate geometry can be uniformly coated onto all their surfaces and cutting edges. The power units for the magnetrons are straight dc whilst the substrate is biased by pulsed dc. Two solid heaters are installed in the system to enable running a wide range of deposition temperature from 200℃ to 500℃. The pumping system is powerful that incorporated with a polycold to pump the system to a good vacuum in a very short time. A front door and a movable substrate table are available to benefit easily loading and unloading. Deposition procedure,properties and performance of the coatings is also presented in this paper.

  5. Effect of annealing temperature on the properties of pulsed magnetron sputtered nanocrystalline Ag:SnO{sub 2} films

    Energy Technology Data Exchange (ETDEWEB)

    Reddy, A. Sivasankar [SEG-CEMUC, Department of Mechanical Engineering, University of Coimbra, 3030-788 Coimbra (Portugal); Division of Advanced Materials Engineering, Kongju National University, Budaedong, Cheonan City (Korea, Republic of); Figueiredo, N.M. [SEG-CEMUC, Department of Mechanical Engineering, University of Coimbra, 3030-788 Coimbra (Portugal); Cho, H.C.; Lee, K.S. [Division of Advanced Materials Engineering, Kongju National University, Budaedong, Cheonan City (Korea, Republic of); Cavaleiro, A., E-mail: albano.cavaleiro@dem.uc.pt [SEG-CEMUC, Department of Mechanical Engineering, University of Coimbra, 3030-788 Coimbra (Portugal)

    2012-04-16

    Highlights: Black-Right-Pointing-Pointer The nanocrystalline Ag:SnO{sub 2} films were prepared by pulsed direct current magnetron sputtering. Black-Right-Pointing-Pointer After annealing, the homogeneity and smoothness of the films was improved. Black-Right-Pointing-Pointer The as deposited films exhibited the highest optical transmittance of 95% with band gap of 3.23 eV. Black-Right-Pointing-Pointer The low electrical resistivity of 0.007 {Omega} cm was obtained at annealing temperature of 500 Degree-Sign C. - Abstract: Ag doped SnO{sub 2} (Ag:SnO{sub 2}) films were prepared on glass substrates by pulsed dc magnetron sputtering. The effect of thermal annealing treatments on the physical properties of the films was investigated. Several analytical techniques such as X-ray diffraction, electron probe microanalysis, scanning electron microscopy, atomic force microscopy, four-point probe and double beam spectrophotometer were used to examine the changes in structural, compositional, surface morphology, electrical and optical properties. XRD results showed that the films were grown with (1 1 0) preferential orientation with an average grain size in the range from 4.8 to 8.9 nm. The smoothness of the films increased with annealing temperature. The films annealed at 500 Degree-Sign C presented an electrical resistivity of 0.007 {Omega} cm. The as deposited films exhibited the highest optical transmittance of 95% with band gap of 3.23 eV.

  6. Liquid helium boil-off measurements of heat leakage from sinter-forged BSCCO current leads under DC and AC conditions

    Science.gov (United States)

    Cha, Y. S.; Niemann, R. C.; Hull, J. R.; Youngdahl, C. A.; Lanagan, M. T.; Nakade, M.; Hara, T.

    1995-06-01

    Liquid helium boil-off experiments are conducted to determine the heat leakage rate of a pair of BSCCO 2223 high-temperature superconductor current leads made by sinter forging. The experiments are carried out in both DC and AC conditions and with and without an intermediate heat intercept. Current ranges are from 0-500 A for DC tests and 0-1,000 A(sub rms) for AC tests. The leads are self-cooled. Results show that magnetic hysteresis (AC) losses for both the BSCCO leads and the low-temperature superconductor current jumper are small for the current range. It is shown that significant reduction in heat leakage rate (liquid helium boil-off rate) is realized by using the BSCCO superconductor leads. At 100 A, the heat leakage rate of the BSCCO/copper binary lead is approximately 29% of that of the conventional copper lead. Further reduction in liquid helium boil-off rate can be achieved by using an intermediate heat intercept. For example, at 500 K, the heat leakage rate of the BSCCO/copper binary lead is only 7% of that of the conventional copper lead when an intermediate heat intercept is used.

  7. Reactive high power impulse magnetron sputtering: combining simulation and experiment

    Science.gov (United States)

    Kozak, Tomas; Vlcek, Jaroslav

    2016-09-01

    Reactive high-power impulse magnetron sputtering (HiPIMS) has recently been used for preparation of various oxide films with high application potential, such as TiO2, ZrO2, Ta2O5, HfO2, VO2. Using our patented method of pulsed reactive gas flow control with an optimized reactive gas inlet, we achieved significantly higher deposition rates compared to typical continuous dc magnetron depositions. We have developed a time-dependent model of the reactive HiPIMS. The model includes a depth-resolved description of the sputtered target (featuring sputtering, implantation and knock-on implantation processes) and a parametric description of the discharge plasma (dissociation of reactive gas, ionization and return of sputtered atoms and gas rarefaction). The model uses a combination of experimental and simulation data as input. We have calculated the composition of the target and substrate for several deposition conditions. The simulations predict a reduced compound coverage of the target in HiPIMS compared to the continuous dc sputtering regime which explains the increased deposition rate. The simulations show that an increased dissociation of oxygen in a HiPIMS discharge is beneficial to achieve stoichiometric films on the substrate at high deposition rates.

  8. Calculation and Analysis of DC Link Capacitor's Current for AC-DC-AC Inverter%AC—DC—AC变频器直流支撑电容电流计算及分析

    Institute of Scientific and Technical Information of China (English)

    刘海涛; 陈涛

    2012-01-01

    In order to guarantee the performance of converter, it needs to select the appropriate intermediate DC support capacitor. According to the analysis of the circuit topology and the switch modulation mode of converter and referring to the existing literature, it summerizes a method to calculate current of the capacitor. The theory and simulation results demonstrate that this method has good accuracy.%为了使变频器满足性能要求,需选择合适的中间直流支撑电容。根据对变频器电路拓扑与开关调制方式的分析,并借鉴已有文献资料,归纳出计算电容器电流的方法。理论与仿真证明,该方法有较好的准确性。

  9. Simulation Study Using an Injection Phase-locked Magnetron as an Alternative Source for SRF Accelerators

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Haipeng [Thomas Jefferson National Accelerator Facility, Newport News, VA (United States); Plawski, Tomasz E. [Thomas Jefferson National Accelerator Facility, Newport News, VA (United States); Rimmer, Robert A. [Thomas Jefferson National Accelerator Facility, Newport News, VA (United States)

    2015-09-01

    As a drop-in replacement for the CEBAF CW klystron system, a 1497 MHz, CW-type high-efficiency magnetron using injection phase lock and amplitude variation is attractive. Amplitude control using magnetic field trimming and anode voltage modulation has been studied using analytical models and MATLAB/Simulink simulations. Since the 1497 MHz magnetron has not been built yet, previously measured characteristics of a 2.45GHz cooker magnetron are used as reference. The results of linear responses to the amplitude and phase control of a superconducting RF (SRF) cavity, and the expected overall benefit for the current CEBAF and future MEIC RF systems are presented in this paper.

  10. An Improvement on Current Sharing Characteristics of Poloidal Field (PF)-AC-DC Converters%An Improvement on Current Sharing Characteristics of Poloidal Field (PF)-AC-DC Converters

    Institute of Scientific and Technical Information of China (English)

    陈鹏; 傅鹏; 宋执权

    2011-01-01

    In response to the current imbalance phenomenon and its harmfulness, a current sharing circuit model is built up, which reveals the underlying causes for the current imbalance through a quantitative analysis. Then, a feasible approach of improvement, namely enlargement of the length of connection busbars, is proposed. After the amendment, it can be seen that the current sharing coefficient is ahnost unity under rated or fault current conditions.

  11. A Circulating-Current Suppression Method for Parallel Connected Voltage Source Inverters (VSI) with Common DC and AC Buses

    DEFF Research Database (Denmark)

    Wei, Baoze; Guerrero, Josep M.; Quintero, Juan Carlos Vasquez

    2017-01-01

    applications. The basic concept of the proposed circulating-current suppression method is to modify the original current references by using the current difference among the parallel inverters. In the proposed approach, both of cross circulating-current and zero-sequence circulating-current are considered...... on the virtual impedance. Further, a circulating-current control loop is added to improve the average current-sharing performance among parallel VSIs. Experimental results are presented to show the effectiveness of the proposed control method to suppress both of the cross and zero-sequence circulating-currents....

  12. Influence of plasma parameters on the growth and properties of magnetron sputtered CNx thin films

    Science.gov (United States)

    Hellgren, Niklas; Macák, Karol; Broitman, Esteban; Johansson, Mats P.; Hultman, Lars; Sundgren, Jan-Eric

    2000-07-01

    Carbon nitride CNx thin films were grown by unbalanced dc magnetron sputtering from a graphite target in a pure N2 discharge, and with the substrate temperature Ts kept between 100 and 550 °C. A solenoid coil positioned in the vicinity of the substrate was used to support the magnetic field of the magnetron, so that the plasma could be increased near the substrate. By varying the coil current and gas pressure, the energy distribution and fluxes of N2+ ions and C neutrals could be varied independently of each other over a wide range. An array of Langmuir probes in the substrate position was used to monitor the radial ion flux distribution over the 75-mm-diam substrate, while the flux and energy distribution of neutrals was estimated through Monte Carlo simulations. The structure, surface roughness, and mechanical response of the films are found to be strongly dependent on the substrate temperature, and the fluxes and energies of the deposited particles. By controlling the process parameters, the film structure can thus be selected to be amorphous, graphite-like or fullerene-like. When depositing at 3 mTorr N2 pressure, with Ts>200 °C, a transition from a disordered graphite-like to a hard and elastic fullerene-like structure occurred when the ion flux was increased above ˜0.5-1.0 mA/cm2. The nitrogen-to-carbon concentration ratio in the films ranged from ˜0.1 to 0.65, depending on substrate temperature and gas pressure. The nitrogen film concentration did, however, not change when varying the nitrogen ion-to-carbon atom flux ratios from ˜1 to 20.

  13. Fault Current Limitation and Analysis of Current Limiting Characteristic for Multi-terminal VSC-HVDC DC Lines%多端VSC-HVDC直流线路故障限流及限流特性分析

    Institute of Scientific and Technical Information of China (English)

    刘剑; 邰能灵; 范春菊; 郑晓冬; 唐跃中

    2016-01-01

    基于电压源型换流器(voltage source converters,VSC)的多端柔性直流系统中直流线路的故障电流上升速度快、电流峰值大。然而具有大容量、快切断能力的高压直流断路器正在研制中。结合目前直流断路器开断容量水平,该文提出通过在直流线路两端串入限流电路的方法来限制故障电流的峰值和电流的上升速度率,并给出相关参数的理论计算方法。对该电路的限流特性进行分析与对比,结果表明,该限流电路能有效抑制故障电流,降低了对直流断路器开断容量和开断速度的要求。在该限流电路的基础上,提出一种多端VSC-HVDC 直流线路故障处理方案。仿真分析表明,该故障处理方案能够有效抑制直流线路故障电流以及 IGBT 并联二极管电流,故障切除后非故障系统能保持正常运行,可以有效地增强多端VSC-HVDC系统对直流线路故障的处理能力。%The fault current of DC line in multi-terminal HVDC system based on voltage source converters (VSC) increases quickly with large peak, while the DC circuit breaker with large capacity and fast breaking speed is still under development. Combined with the capacity level of DC circuit breaker breaking, a current limiting circuit was proposed to limit the peak and rising rate of fault current by connecting it to DC line ends. Theoretical calculation method for the circuit parameters was also given. The analysis results about the circuit and the comparison with other methods show that the proposed circuit is able to limit the fault current effectively and reduce the requirement for DC breaker capacity and speed. Based on the circuit, a fault-handling scheme for DC lines in multi-terminal VSC-HVDC was proposed. The simulation results show that the proposed scheme is capable of limiting fault current of DC lines and parallel diodes effectively, and non-fault system can maintain normal operation after fault

  14. Effects of dopant concentration and impurities on the conductivity of magnetron-sputtered nanocrystalline yttria-stabilized zirconia

    DEFF Research Database (Denmark)

    Sillassen, M.; Eklund, P.; Pryds, Nini;

    2010-01-01

    Cubic yttria-stabilized zirconia (YSZ) films with yttria concentrations of 8.7, 9.9, and 11 mol% have been deposited by reactive pulsed DC magnetron from Zr–Y alloy targets. The overall microstructure and texture in the films showed no dependence on the yttria concentration. Films deposited at fl...

  15. A Scheme for Current-limiting Hybrid DC Circuit Breaker%一种限流式混合直流断路器方案

    Institute of Scientific and Technical Information of China (English)

    江道灼; 张弛; 郑欢; 叶李心; 严玉婷

    2014-01-01

    直流输电与交流输电相比,具有线损低、不存在系统同步运行稳定性问题等一系列优点。近年来,随着电压源型高压变流器等技术的迅速发展,柔性多端高压直流输电系统、直流输配电网以及直流断路器等关键技术与装备的研究受到了国内外的高度重视。文中简要阐述了机械式、全固态与混合式3类直流断路器的拓扑结构、工作原理、优缺点及国内外研究现状,指出高压直流断路器应以混合式为主要发展方向;提出一种限流式混合直流断路器方案并仿真验证了其可行性,该方案采用全/半控器件串联构成固态开关再与机械开关并联的混合开关结构及故障限流技术,可有效抑制直流短路电流上升率,降低故障判断灵敏性与机械开关速动性的要求,减少高压应用场合下固态开关器件的串联数量(特别是绝缘栅双极型晶体管等价格昂贵的全控型器件),从而降低装置工程化实现的技术难度及其体积与成本。%In contrast to alternating current(AC) power transmission,direct current(DC) power transmission has a series of advantages,such as low line loss and nonexistence of the problem of system synchronous operation stability.In recent years, with the rapid development of voltage source converter technology with higher voltage,the study on flexible multi-terminal high voltage direct current transmission(HVDC) system,DC transmission and distribution power net,as well as the related key technologies and equipments such as the high-voltage DC circuit breaker (DC-breaker) has captured great attention from the community at home and abroad.The research status of three types of DC-breakers(spoken of as the mechanical type,all-solid-state and hybrid type DC-breakers) and their topologies,working principles,advantages as well as disadvantages are briefly treated.It is concluded that the hybrid type should be the main trend of development

  16. A Circulating Current Suppression Method for Parallel Connected Voltage-Source-Inverters (VSI) with Common DC and AC Buses

    DEFF Research Database (Denmark)

    Wei, Baoze; Guerrero, Josep M.; Quintero, Juan Carlos Vasquez

    2016-01-01

    on circulating current control loops used to modify the reference currents by compensating the error currents among parallel inverters. Both of the cross and zero-sequence circulating currents are considered. The proposed method is coordinated together with droop and virtual impedance control. In this paper...... loop is added to acquire a better average current sharing performance among parallel VSIs, which can effectively suppress both of the cross and zero-sequence circulating currents. Experimental results are presented in order to verify the effectiveness of the proposed control strategy....

  17. Combined complementary plasma diagnostics to characterize a 2f plasma with additional DC current with conditioning effects at the chamber wall

    Science.gov (United States)

    Klick, Michael; Rothe, Ralf; Baek, Kye Hyun; Lee, Eunwoo

    2016-09-01

    Multiple frequencies and DC current used in a low-pressure plasma rf discharge result in an increased complexity. This needs plasma diagnostics applied, in particular in a plasma process chamber. That is done under manufacturing conditions which restrict the applicable plasma diagnostics to non-invasive methods with small footprint. So plasma chamber parameters, optical emission spectroscopy (OES), and self-excited electron spectroscopy (SEERS) are used to characterize the plasma and to understand chamber wall conditioning effects in an Ar plasma. The parameters are classified according to their origin--the region they are representative for. The center ion density is estimated from the DC current and compared to the SEERS electron density reflecting the electron density close to that at the chamber wall. The conditioning effects are caused by Si sputtering at a Si wafer changing the chamber wall state only when the chamber is clean, subsequent plasmas in the same chamber are not affected in that way. Through the combination of the complementary methods it can be shown that the chamber wall condition finally changes the radial plasma density distribution. Also the heating of electrons in the sheath is shown to be influenced by conditioning effects.

  18. A novel electro-driven membrane for removal of chromium ions using polymer inclusion membrane under constant D.C. electric current.

    Science.gov (United States)

    Kaya, Ahmet; Onac, Canan; Alpoguz, H Korkmaz

    2016-11-05

    In this study, the use of polymer inclusion membrane under constant electric current for the removal of Cr(VI) from water has investigated for the first time. Transport of Cr(VI) is performed by an electric current from the donor phase to the acceptor phase with a constant electric current of 0.5A. The optimized membrane includes of 12.1% 2-nitrophenyl octyl ether (2-NPOE), 77.6% cellulose triacetate (CTA), 10.3% tricapryl-methylammonium chloride (Aliquat 336) as a carrier. We tested the applicability of the selected membrane for Cr(VI) removal in real environmental water samples and evaluated its reusability. Electro membrane experiments were carried out under various parameters, such as the effect of electro membrane voltage at constant DC electric current; electro membrane current at constant voltage, acceptor phase pH, and stable electro membrane; and a comparison of polymer inclusion membrane and electro membrane transport studies. The Cr(VI) transport was achieved 98.33% after 40min under optimized conditions. An alternative method has been employed that eliminates the changing of electrical current by the application of constant electric current for higher reproducibility of electro membrane extraction experiments by combining the excellent selective and long-term use features of polymer inclusion membrane.

  19. Dual-Input Soft-Switched DC-DC Converter with Isolated Current-Fed Half-Bridge and Voltage-Fed Full-Bridge for Fuel Cell or Photovoltaic Systems

    DEFF Research Database (Denmark)

    Zhang, Zhe; Thomsen, Ole Cornelius; Andersen, Michael A. E.

    2013-01-01

    This paper introduces a new zero-voltage-switching (ZVS) isolated DC-DC converter with two input ports which can be utilized in hybrid energy systems, for instance, in a fuel cell and super-capacitor system. By fully using two high frequency transformers, the proposed converter can effectively...

  20. Advanced DC/DC converters

    CERN Document Server

    Luo, Fang Lin

    2003-01-01

    INTRODUCTIONHistorical ReviewMultiple Quadrant ChoppersPump CircuitsDevelopment of DC/DC Conversion TechniqueCategorize Prototypes and DC/DC Converters Family TreeVOLTAGE-LIFT CONVERTERSIntroductionSeven Self-Lift ConvertersPositive Output Luo-ConvertersNegative Output Luo-ConvertersModified Positive Output Luo-Converters Double Output Luo-ConvertersPOSITIVE OUTPUT SUPER-LIFT LUO-CONVERTERS IntroductionMain SeriesAdditional SeriesEnhanced Series Re-Enhanced Series Multiple-Enhanced Series Summary of Positive Output

  1. Electrical and Optical Properties of Fluorine Doped Tin Oxide Thin Films Prepared by Magnetron Sputtering

    OpenAIRE

    2014-01-01

    Fluorine doped tin oxide (FTO) coatings have been prepared using the mid-frequency pulsed DC closed field unbalanced magnetron sputtering technique in an Ar/O2 atmosphere using blends of tin oxide and tin fluoride powder formed into targets. FTO coatings were deposited with a thickness of 400 nm on glass substrates. No post-deposition annealing treatments were carried out. The effects of the chemical composition on the structural (phase, grain size), optical (transmission, optical band-gap) ...

  2. Optical and morphological properties of porous diamond-like-carbon films deposited by magnetron sputtering

    OpenAIRE

    Baroni, M. P. M. A.; Conceição, M. Ventura; Rosa, R. R.; Persson, C.; Arwin, H.; Silva Jr., E.F. da; Roman, L.S.; Nakamura, O.; I. Pepe; Silva, A. Ferreira da

    2006-01-01

    RESTRITO Porous diamond-like-carbon (PDLC) thin films obtained on silicon substrate by DC low energy magnetron sputtering have been investigated by photoluminescence, transmission and reflection spectroscopy, photoacoustic and spectroscopic ellipsometry. The absorption features observed for these films show similarities with those of porous silicon (PS) as well as in the performed gradient structural pattern classification of the SFM porosity, by means of the computational GPA-flyby enviro...

  3. DC + RSL

    DEFF Research Database (Denmark)

    Haxthausen, Anne

    1996-01-01

    This document gives some initial ideas of how the Duration Calculus (DC) can be integrated with the RAISE Specification Language (RSL).......This document gives some initial ideas of how the Duration Calculus (DC) can be integrated with the RAISE Specification Language (RSL)....

  4. Conception de convertisseurs DC/DC à base de MEMS

    OpenAIRE

    Ghandour, Sahar

    2011-01-01

    Current trends towards miniaturization of electronic circuits had led to the advent of System onChip containing different types of circuits indented to perform different functions. These sub-systemsrequire different supply voltages that are delivered from the SoC supply voltage using several DC/DCconverters. Currently, most of the electronic circuits of portable applications use conventional SMPS(switch mode power supply) DC/DC converters containing an inductor element to stock temporally the...

  5. A SMALL UNBALANCED MAGNETRON SPUTTERING SOURCE WITH MULTIPOLE MAGNETIC FIELD ANODE

    Institute of Scientific and Technical Information of China (English)

    郑思孝; 孙官清; 等

    1994-01-01

    A small unbalanced magnetron atom source with multipole cusp magnetic field anode is described.The co-axial magnetron rpinciple is extended to the circular planar magnetron atom source,which raises the efficiency of sputtering target area up to 60%.The multipole magnetic field is put in the anode.which makes the unbalanced magnetron atom source run in a higher discharge current at a lower arc voltage condition.Meanwhile.the sputtering atoms through out the anode can be ionized partially,because the electron reaching the anode have to suffer multiple collisons in order to advance across the multipole magnetic field lines in the anode,which enhances the chemical reactivity of the ejecting atoms in film growth and improve the property of film depositing.

  6. Evolution of sputtering target surface composition in reactive high power impulse magnetron sputtering

    Science.gov (United States)

    Kubart, T.; Aijaz, A.

    2017-05-01

    The interaction between pulsed plasmas and surfaces undergoing chemical changes complicates physics of reactive High Power Impulse Magnetron Sputtering (HiPIMS). In this study, we determine the dynamics of formation and removal of a compound on a titanium surface from the evolution of discharge characteristics in an argon atmosphere with nitrogen and oxygen. We show that the time response of a reactive process is dominated by surface processes. The thickness of the compound layer is several nm and its removal by sputtering requires ion fluence in the order of 1016 cm-2, much larger than the ion fluence in a single HiPIMS pulse. Formation of the nitride or oxide layer is significantly slower in HiPIMS than in dc sputtering under identical conditions. Further, we explain very high discharge currents in HiPIMS by the formation of a truly stoichiometric compound during the discharge off-time. The compound has a very high secondary electron emission coefficient and leads to a large increase in the discharge current upon target poisoning.

  7. SEMICONDUCTOR INTEGRATED CIRCUITS Design and implementation of adaptive slope compensation in current mode DC—DC converter

    Science.gov (United States)

    Zhongjie, Guo; Longsheng, Wu; Youbao, Liu

    2010-12-01

    To improve the compensation for the inherent instability in a current mode converter, the adaptive slope compensation, giving attention to the problems of the traditional compensation on compensation accuracy, loading capability and turning jitter, is presented. Based on the analysis of current loop, by detecting the input and output voltage, converting the adaptive slope compensation current, the compensation of the current loop is optimized successfully. It can not only improve the compensation accuracy but also eliminate the over compensation, the turning jitter and the poor loading capability in the reported slope compensation. A power supply chip with adaptive slope compensation has been fabricated in a 0.35 μm CMOS process. The measurement results show that the chip starts up and operates steadily with the constant current limit under conditions of 5 V input voltage, from 10% to 100% duty cycle.

  8. Crafting glass vessels: current research on the ancient glass collections in the Freer Gallery of Art, Washington, D.C.

    Science.gov (United States)

    Nagel, Alexander; McCarthy, Blythe; Bowe, Stacy

    Our knowledge of glass production in ancient Egypt has been well augmented by the publication of recently excavated materials and glass workshops, but also by more recent materials analysis, and experiments of modern glass-makers attempting to reconstruct the production process of thin-walled coreformed glass vessels. From the mounting of a prefabricated core to the final glass product our understanding of this profession has much improved. The small but well preserved glass collection of the Freer Gallery of Art in Washington, D.C. is a valid tool for examining and studying the technology and production of ancient Egyptian core formed glass vessels. Charles Lang Freer (1854-1919) acquired most of the material from Giovanni Dattari in Cairo in 1909. Previously the glass had received only limited discussion, suggesting that most of these vessels were produced in the 18th Dynasty in the 15th and 14th centuries BCE, while others date from the Hellenistic period and later. In an ongoing project we conducted computed radiography in conjunction with qualitative x-ray fluorescence analysis on a selected group of vessels to understand further aspects of the ancient production process. This paper will provide an overview of our recent research and present our data-gathering process and preliminary results. How can the examinations of core formed glass vessels in the Freer Gallery contribute to our understanding of ancient glass production and technology? By focusing on new ways of looking at old assumptions using the Freer Gallery glass collections, we hope to increase understanding of the challenges of the production process of core-vessel technology as represented by these vessels.

  9. Pulse pattern modulated strategy for harmonic current components reduction in three-phase AC-DC converters

    DEFF Research Database (Denmark)

    Davari, Pooya; Zare, Firuz; Blaabjerg, Frede

    2015-01-01

    Generated harmonic current as a consequence of employing power electronics converter is known as an important power quality issue in distribution networks. From industry point of view complying with international standards is mandatory, however cost and efficiency are two other important features......, which need to be considered in order to be competitive in the market. Therefore, having a flexibility to meet various requirements imposed by the standard recommendations or costumer needs is at most desirable. This makes the generated harmonic current mitigation a challenging task especially with three......-phase diode bridge rectifier, which still is preferred in many power electronic systems. This paper addresses a novel current modulation strategy using a single-switch boost three-phase diode bridge rectifier. The proposed method can selectively mitigate current harmonics, which makes it suitable...

  10. Pulse Pattern-Modulated Strategy for Harmonic Current Components Reduction in Three-Phase AC–DC Converters

    DEFF Research Database (Denmark)

    Davari, Pooya; Zare, Firuz; Blaabjerg, Frede

    2016-01-01

    Generated harmonic current as a consequence of employing power electronics converter is known as an important power quality issue in distribution networks. From industry point of view complying with international standards is mandatory, however cost and efficiency are two other important features......, which need to be considered in order to be competitive in the market. Therefore, having a flexibility to meet various requirements imposed by the standard recommendations or costumer needs is at most desirable. This makes the generated harmonic current mitigation a challenging task especially with three......-phase diode bridge rectifier, which still is preferred in many power electronic systems. This paper addresses a novel current modulation strategy using a single-switch boost three-phase diode bridge rectifier. The proposed method can selectively mitigate current harmonics, which makes it suitable...

  11. Bidirectional dc-to-dc Power Converter

    Science.gov (United States)

    Griesbach, C. R.

    1986-01-01

    Solid-state, series-resonant converter uses high-voltage thyristors. Converter used either to convert high-voltage, low-current dc power to lowvoltage, high current power or reverse. Taking advantage of newly-available high-voltage thyristors to provide better reliability and efficiency than traditional converters that use vacuum tubes as power switches. New converter essentially maintenance free and provides greatly increased mean time between failures. Attractive in industrial applications whether or not bidirectional capability is required.

  12. 无刷直流电动机不导通相电流分析%Analysis of Floating Phase Current in Brushless DC Motor

    Institute of Scientific and Technical Information of China (English)

    王璞; 解恩; 翟猛

    2012-01-01

    分析了无刷直流电动机在三相六状态及不同的PWM方式下,绕组续流期间不导通相电流,并且指出各有不同.对常用的各种PWM方式通过原理分析及数学推导,得出不导通相电流存在的时段和幅值趋势.并通过实验测试,验证了分析结果.%The floating phase current during the free-wheeling and the difference of the brushless DC motor operating in three-phase-six-states and different PWM modes were analysed. The conclusion of existing time and amplitude trend were achieved by theory analysis and mathematical deduction of common PWM modes. The result was verified through the experiment test.

  13. A Novel FPSM Controller for DC-DC Switching Converters

    Institute of Scientific and Technical Information of China (English)

    Yong Feng; Shun-Ping Wang; Ping Luo; Quan-Ming Niu; Zhao-Ji Li

    2007-01-01

    This paper presents a novel fuzzy pulse skip modulation (FPSM) controller for switching direct current to direct current (DC-DC) converters based on fuzzy ratiocination modeling approach. Owing to the optimal consideration during the design and the nonlinear characteristics of the controller, improved dynamic responses of the FPSM controller can be achieved over conventional controllers. Compared with conventional proportion integral derivative (PID) control, FPSM control has 60% lower overshoot and 10% lower setting time under the same input voltage and output load change. The presented approach is general and can be applied to other types of DC-DC converters.

  14. 基于高精密总加器原理的强直流校验方法研究%Research of calibrating heavy DC current method based on high-precision current adder principle

    Institute of Scientific and Technical Information of China (English)

    任士焱; 刘情新; 彭娟娟

    2014-01-01

    提出了基于高精密电流总加器原理的强直流校验方法.该总加器测量原理是以磁调制式直流电流比较仪原理为基础,以0.005%的高精度实现多路直流电流直接总加,解决了通过标准电阻进行间接电流总加的传统方法带来的精度低、受温度影响等问题.提出了绕组公约数原理与传感器误差补偿原理,解决了传感器的不同变比与传感器误差的影响问题.该校验方法构成以总加器为核心的总加测量校验系统,从而完成对强直流总电流测量装置的校验.最后,通过M atlab仿真与自校实验,验证了总加测量校验系统的精度等级能够达到0.005级.%T he calibrating high DC (direct current ) current sensors′ method based on high-precision current adder was presented .This adder ,based on the DC current comparator principle ,could add several direct currents directly with 0 .005% accuracy ,and solved problems of low precision and tem-perature influence caused by standard resistors .Additionally ,the common divisor principle and the compensating sensors′error principle were presented to solve problems caused by different sensors′rations and sensors′errors .The calibration system based on the current adder was created to calibrate heavy DC current sensors .At last ,through Matlab simulation and self-calibration experiment ,the adder precision w hich is better than 0 .005 is confirmed .

  15. Negative Ion Sources: Magnetron and Penning

    CERN Document Server

    Faircloth, D C

    2013-01-01

    The history of the magnetron and Penning electrode geometry is briefly outlined. Plasma generation by electrical discharge-driven electron impact ionization is described and the basic physics of plasma and electrodes relevant to magnetron and Penning discharges are explained. Negative ions and their applications are introduced, along with their production mechanisms. Caesium and surface production of negative ions are detailed. Technical details of how to build magnetron and Penning surface plasma sources are given, along with examples of specific sources from around the world. Failure modes are listed and lifetimes compared.

  16. A new optimum topology switching dc-to-dc converter

    Science.gov (United States)

    Cuk, S.; Middlebrook, R. D.

    1977-01-01

    A novel switching dc-to-dc converter is presented, which has the same general conversion property (increase or decrease of the input dc voltage) as does the conventional buck-boost converter, and which offers through its new optimum topology higher efficiency, lower output voltage ripple, reduced EMI, smaller size and weight, and excellent dynamic response. One of its most significant advantages is that both input and output current are not pulsating but are continuous (essentially dc with small superimposed switching current ripple), thus resulting in a close approximation to the ideal physically nonrealizable dc-to-dc transformer. The converter retains the simplest possible structure with the minimum number of components which, when interconnected in its optimum topology, yield the maximum performance.

  17. Anisotropies in magnetron sputtered carbon nitride thin films

    Science.gov (United States)

    Hellgren, Niklas; Johansson, Mats P.; Broitman, Esteban; Hultman, Lars; Sundgren, Jan-Eric

    2001-04-01

    Carbon nitride CNx (0⩽x⩽0.35) thin films, deposited by reactive dc magnetron sputtering in Ar/N2 discharges have been studied with respect to microstructure using electron microscopy, and elastic modulus using nanoindentation and surface acoustic wave analyses. For growth temperature of 100 °C, the films were amorphous, and with an isotropic Young's modulus of ˜170-200 GPa essentially unaffected by the nitrogen fraction. The films grown at elevated temperatures (350-550 °C) show anisotropic mechanical properties due to a textured microstructure with standing basal planes, as observed from measuring the Young's modulus in different directions. The modulus measured in the plane of the film was ˜60-80 GPa, while in the vertical direction the modulus increased considerably from ˜25 to ˜200 GPa as the nitrogen content was increased above ˜15 at. %.

  18. Loop heating by D.C. electric current and electromagnetic wave emissions simulated by 3-D EM particle zone

    Science.gov (United States)

    Sakai, J. I.; Zhao, J.; Nishikawa, K.-I.

    1994-01-01

    We have shown that a current-carrying plasma loop can be heated by magnetic pinch driven by the pressure imbalance between inside and outside the loop, using a 3-dimensional electromagnetic (EM) particle code. Both electrons and ions in the loop can be heated in the direction perpendicular to the ambient magnetic field, therefore the perpendicular temperature can be increased about 10 times compared with the parallel temperature. This temperature anisotropy produced by the magnetic pinch heating can induce a plasma instability, by which high-frequency electromagnetic waves can be excited. The plasma current which is enhanced by the magnetic pinch can also excite a kinetic kink instability, which can heat ions perpendicular to the magnetic field. The heating mechanism of ions as well as the electromagnetic emission could be important for an understanding of the coronal loop heating and the electromagnetic wave emissions from active coronal regions.

  19. Target voltage behaviour of a vanadium-oxide thin film during reactive magnetron sputtering

    Institute of Scientific and Technical Information of China (English)

    Wang Tao; Jiang Ya-Dong; Yu He; Wu Zhi-Ming; Zhao He-Nan

    2011-01-01

    This paper simulates reactive magnetron-sputtering in constant current mode in a Vanadium-O2/Ar system equipped with a DC power supply by adopting both kinetics model and Berg's model. The target voltage during the reactive sputtering has been investigated as a function of reactive gas flow. Both experiments and simulations demonstrate a hysteresis curve with respect to the oxygen supply. The time-dependent variation of the target mode is studied by measuring the target voltage for various reactive oxygen gas flows and pre-sputtering times. The presputtering time increases with the increased initial target voltage. Furthermore, a corresponding time-dependent model simulating target voltage changes is also proposed. Based on these simulations, we find some relationships between the discharge voltage behaviour and the properties of the formed oxide. In this way, a better understanding of the target voltage changes during reactive sputtering can be achieved. We conclude that the presented theoretical models for parameter-dependent case and time-dependent case are in qualitative agreement with the experimental results and can be used to comprehend the target voltage behaviour in the deposition of vanadium oxide thin films.

  20. MICROSTRUCTURE AND PROPERTIES OF ANNEALED ZnO THIN FILMS DEPOSITED BY MAGNETRON SPUTTERING

    Institute of Scientific and Technical Information of China (English)

    J. Lee; W. Gao; Z. Li; M. Hodgson; A. Asadov; J. Metson

    2005-01-01

    ZnO thin films were deposited on a glass substrate by dc (direct current) and rf (radio frequency) magnetron sputtering. Post-deposition annealing was performed in different atmospheres and at different temperatures. The correlation of the annealing conditions with the microstructure and properties of the ZnO films were investigated by ultraviolet-visible spectroscopy, X-ray diffraction, conductivity measurement and scanning electron microscopy. Only the strong 002peak could be observed by X-ray diffraction. The post-deposition annealing of ZnO films was found to alter the film's microstructure and properties, including crystallinity, porosity, grain size, internal stress level and resistivity. It was also found that after annealing, the conductivity of poorly conductive samples often improved. However, annealing does not improve the conductivity of samples with high conductivity prior to annealing. The resistivity of as-grown films annealing on the conductivity of ZnO, it is believed that annealing may alter the presence and distribution of oxygen defects, reduce the lattice stress, cause diffusion, grain coarsening and recrystallization. Annealing will reduce the density of grain boundaries in less dense films,which may decrease the resistivity of the films. On the other hand, annealing may also increase the porosity of thin films, leading to an increase in resistivity.

  1. Studies on Magnetron Sputtered ZnO-Ag Films: Adhesion Activity of S. aureus

    Science.gov (United States)

    Geetha, S. R.; Dhivya, P.; Raj, P. Deepak; Sridharan, M.; Princy, S. Adline

    Zinc oxide (ZnO) thin films have been deposited onto thoroughly cleaned stainless steel (AISI SS 304) substrates by reactive direct current (dc) magnetron sputtering and the films were doped with silver (Ag). The prepared thin films were analyzed using X-ray diffraction (XRD), field emission-scanning electron microscopy (FE-SEM) to investigate the structural and morphological properties. The thickness values of the films were in the range of 194 to 256nm. XRD results revealed that the films were crystalline with preferred (002) orientation. Grain size values of pure ZnO films were found to be 19.82-23.72nm. On introducing Ag into ZnO film, the micro-structural properties varied. Adhesion test was carried out with Staphylococcus aureus (S. aureus) in order to know the adherence property of the deposited films. Colony formation units (CFU) were counted manually and bacterial adhesion inhibition (BAI) was calculated. We observed a decrease in the CFU on doping Ag in the ZnO films. BAI of the film deposited at - 100 V substrate bias was found to be increased on Ag doping from 69 to 88%.

  2. Start-up current adaptive control for sensorless high-speed brushless DC motors based on inverse system method and internal mode controller

    Directory of Open Access Journals (Sweden)

    Yanzhao He

    2017-02-01

    Full Text Available The start-up current control of the high-speed brushless DC (HS-BLDC motor is a challenging research topic. To effectively control the start-up current of the sensorless HS-BLDC motor, an adaptive control method is proposed based on the adaptive neural network (ANN inverse system and the two degrees of freedom (2-DOF internal model controller (IMC. The HS-BLDC motor is identified by the online least squares support vector machine (OLS-SVM algorithm to regulate the ANN inverse controller parameters in real time. A pseudo linear system is developed by introducing the constructed real-time inverse system into the original HS-BLDC motor system. Based on the characteristics of the pseudo linear system, an extra closed-loop feedback control strategy based on the 2-DOF IMC is proposed to improve the transient response performance and enhance the stability of the control system. The simulation and experimental results show that the proposed control method is effective and perfect start-up current tracking performance is achieved.

  3. Minimum quench power dissipation and current non-uniformity in ITER type NbTi cable-in-conduit conductor samples under DC conditions

    CERN Document Server

    Rolando, G; Nijhuis, A

    2011-01-01

    The level of current non-uniformity in NbTi CICCs sections near the joints in combination with the magnet field profile needs attention in view of proper joint design. The strand Joule power and current distribution at quench under DC conditions of two samples of ITER Poloidal Field Coil conductors, as tested in the SULTAN facility and of the so called PFCI Model Coil Insert, have been analyzed with the numerical cable model JackPot. The precise trajectories of all individual strands, joint design, cabling configuration, spatial distribution of the magnetic field, sample geometry and using experimentally determined interstrand resistance distributions have been taken into account. Although unable to predict the quench point due to the lack of a thermal-hydraulic routine, the model allows to assess the instantaneous strand power at quench and its local distribution in the cable, showing the hot spots, once the quench conditions in terms of current and temperature are experimentally known., The analysis points ...

  4. Effect of high energy electrons on H⁻ production and destruction in a high current DC negative ion source for cyclotron.

    Science.gov (United States)

    Onai, M; Etoh, H; Aoki, Y; Shibata, T; Mattei, S; Fujita, S; Hatayama, A; Lettry, J

    2016-02-01

    Recently, a filament driven multi-cusp negative ion source has been developed for proton cyclotrons in medical applications. In this study, numerical modeling of the filament arc-discharge source plasma has been done with kinetic modeling of electrons in the ion source plasmas by the multi-cusp arc-discharge code and zero dimensional rate equations for hydrogen molecules and negative ions. In this paper, main focus is placed on the effects of the arc-discharge power on the electron energy distribution function and the resultant H(-) production. The modelling results reasonably explains the dependence of the H(-) extraction current on the arc-discharge power in the experiments.

  5. Simulation Research of Fault Model of Detecting Rotor Dynamic Eccentricity in Brushless DC Motor Based on Motor Current Signature Analysis

    Institute of Scientific and Technical Information of China (English)

    2011-01-01

    The Brushless Direct Current (BLDC) motor is widely used in aerospace area, CNC machines and servo systems that require the high control accuracy Once the faults occur in the motor, it will cause great damage to the whole system. Mechanical faults are common in electric machines, and account for up to 50%-60% of the faults. Approximately, 80% of the mechanical faults lead to the eccentricity. So it is necessary to monitor the health condition of the motor to ensure the faults can be detected earlier and measures will be taken to imorove the reliability.

  6. Principle and Characteristics of a New DC Large Current Shunt Detector%一种新型大电流分流器检测仪原理和特点

    Institute of Scientific and Technical Information of China (English)

    林飞鹏; 邵海明; 贾凯; 朱庆发

    2012-01-01

    提出了一种新型直流大电流分流器检测仪的设计方案,通过电流比较仪和直流电位差计巧妙结合,设计出了一种测量范围宽,制造成本较低的分流器检测仪,该方案对提高检定分流器准确度和降低制造成本有重要的现实意义.%This paper presents a new design scheme of DC large current shunt detector.The detectors have wide measuring range and lower manufacturing costs through combination of DC current comparator (DCC) and DC potentiometer.The design scheme has important significance to improve the efficiency of calibrate current shunts and to reduce the cost and energy consumption.

  7. Effect of thickness on surface morphology, optical and humidity sensing properties of RF magnetron sputtered CCTO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Ahmadipour, Mohsen [Structural Materials Niche Area, School of Materials and Mineral Resources Engineering, Universiti Sains Malaysia, Engineering Campus, 14300 Nibong Tebal, Penang (Malaysia); Ain, Mohd Fadzil [School of Electrical and Electronic Engineering, Universiti Sains Malaysia, Engineering Campus, 14300 Nibong Tebal, Penang (Malaysia); Ahmad, Zainal Arifin, E-mail: srzainal@usm.my [Structural Materials Niche Area, School of Materials and Mineral Resources Engineering, Universiti Sains Malaysia, Engineering Campus, 14300 Nibong Tebal, Penang (Malaysia)

    2016-11-01

    Highlights: • CCTO thin film was synthesized by RF magnetron sputtering successfully. • Increase in thickness lead to increase in grain size and decrease in band gap. • Short response times and recovery times of lead CCTO humidity sensor. • Sensor could detect humidity range (30–90%). - Abstract: In this study, calcium copper titanate (CCTO) thin films were deposited on ITO substrates successfully by radio frequency (RF) magnetron sputtering method in argon atmosphere. The CCTO thin films present a polycrystalline, uniform and porous structure. The surface morphology, optical and humidity sensing properties of the synthesized CCTO thin films have been studied by X-ray diffraction (XRD), atomic force microscopy (AFM), field emission scanning electron microscopy (FESEM), energy-dispersive X-ray spectroscopy (EDX), UV–vis spectrophotometer and current-voltage (I–V) analysis. XRD and AFM confirmed that the intensity of peaks and pore size of CCTO thin films were enhanced by increasing the thin films. Tauc plot method was adopted to estimate the optical band gaps. The surface structure and energy band gaps of the deposited films were affected by film thickness. Energy band gap of the layers were 3.76 eV, 3.68 eV and 3.5 eV for 200 nm, 400 nm, and 600 nm CCTO thin films layer, respectively. The humidity sensing properties were measured by using direct current (DC) analysis method. The response times were 12 s, 22 s, and 35 s while the recovery times were 500 s, 600 s, and 650 s for 200 nm, 400 nm, and 600 nm CCTO thin films, respectively at humidity range of 30–90% relative humidity (RH).

  8. DC Hierarchical Control System for Microgrid Applications

    OpenAIRE

    Lu, Xiaonan; Sun, Kai; Guerrero, Josep M.; Huang, Lipei

    2013-01-01

    In order to enhance the DC side performance of AC-DC hybrid microgrid,a DC hierarchical control system is proposed in this paper.To meet the requirement of DC load sharing between the parallel power interfaces,droop method is adopted.Meanwhile,DC voltage secondary control is employed to restore the deviation in the DC bus voltage.The hierarchical control system is composed of two levels.DC voltage and AC current controllers are achieved in the primary control level.

  9. Scaling and laws of DC discharges as pointers for HiPIMS plasmas

    CERN Document Server

    Maszl, Christian; von Keudell, Achim; Störi, Herbert

    2015-01-01

    Scaling or smiliarity laws of plasmas are of interest if lab size plasma sources are to be scaled for industrial processes. Ideally, the discharge parameters of the scaled plasmas are predictable and the fundamental physical processes are unaltered. Naturally, there are limitations and ranges of validity. Scaling laws for direct current glow discharges are well known. If a well diagnosed discharge is scaled, the field strength in the positive column, the gas amplification and the normal current density can easily be estimated. For non-stationary high power discharges like high power impulse magnetron sputtering (HiPIMS) plasmas, scaling is not as straight forward. Here, one deals with a non-stationary complex system with strong changes in plasma chemistry and symmetry breaks during the pulses. Because of the huge parameter space no good parameters are available to define these kind of discharges unambiguous at the moment. In this contribution we will discuss the scaling laws for DC glow discharges briefly and...

  10. Forback DC-to-DC converter

    Science.gov (United States)

    Lukemire, Alan T.

    1995-05-01

    A pulse-width modulated DC-to-DC power converter including a first inductor, i.e. a transformer or an equivalent fixed inductor equal to the inductance of the secondary winding of the transformer, coupled across a source of DC input voltage via a transistor switch which is rendered alternately conductive (ON) and nonconductive (OFF) in accordance with a signal from a feedback control circuit is described. A first capacitor capacitively couples one side of the first inductor to a second inductor which is connected to a second capacitor which is coupled to the other side of the first inductor. A circuit load shunts the second capacitor. A semiconductor diode is additionally coupled from a common circuit connection between the first capacitor and the second inductor to the other side of the first inductor. A current sense transformer generating a current feedback signal for the switch control circuit is directly coupled in series with the other side of the first inductor so that the first capacitor, the second inductor and the current sense transformer are connected in series through the first inductor. The inductance values of the first and second inductors, moreover, are made identical. Such a converter topology results in a simultaneous voltsecond balance in the first inductance and ampere-second balance in the current sense transformer.

  11. Forback DC-to-DC converter

    Science.gov (United States)

    Lukemire, Alan T. (Inventor)

    1993-01-01

    A pulse-width modulated DC-to-DC power converter including a first inductor, i.e. a transformer or an equivalent fixed inductor equal to the inductance of the secondary winding of the transformer, coupled across a source of DC input voltage via a transistor switch which is rendered alternately conductive (ON) and nonconductive (OFF) in accordance with a signal from a feedback control circuit is described. A first capacitor capacitively couples one side of the first inductor to a second inductor which is connected to a second capacitor which is coupled to the other side of the first inductor. A circuit load shunts the second capacitor. A semiconductor diode is additionally coupled from a common circuit connection between the first capacitor and the second inductor to the other side of the first inductor. A current sense transformer generating a current feedback signal for the switch control circuit is directly coupled in series with the other side of the first inductor so that the first capacitor, the second inductor and the current sense transformer are connected in series through the first inductor. The inductance values of the first and second inductors, moreover, are made identical. Such a converter topology results in a simultaneous voltsecond balance in the first inductance and ampere-second balance in the current sense transformer.

  12. Up-scaled Teer-UDP850/4 Unbalanced Magnetron Deposition System Used for Mass-Production of CrTiAlN Hard Coatings

    Institute of Scientific and Technical Information of China (English)

    ZHANGGuo-jun; YANGShi-cai; JIANGBai-ling; BAILi-jing; CHENDi-chum; WENXiao-bin; TEERD.G.

    2004-01-01

    Up-sca]ed deposition process of Teer-UDP850/4 has been established and used for massive production of CrTiAlN hard coatings in applications of anti-wear, cutting and forming tools. This deposition system uses four magnetrons that are arranged by unbalanced magnets to fomt closed magnetic field enabling the system running in high current density. Elemental metals of Cr, Ti and Al are used as the target materials which are co-deposited with nitrogen forming nlultialloy nitride, nanoscale multi-layer or superlattice hard coatings. The stthstrate turntable is designed as planet rotation mechanism with three folds so that components or tools with complicate geometry can be uniformly coated onto all their surfaces and cutting edges. The pawer units for the magnetrons are straight dc whilst the substrate is biased by pulsed de. Two solid heaters are installed in the system to enable running a wide range of deposition temperature from 200℃ to 500℃. The pumping system is powerful that incorporated with a polycold to pump the system to a good vacuum in a very shori time. A front door and a movable substrate table are available to benefit easily loading and unloading. Deposition procedure. properties and performance of the coatings is also presented in this paper.

  13. Analysis of Current Pulses in HeLa-Cell Permeabilization Due to High Voltage DC Corona Discharge.

    Science.gov (United States)

    Chetty, Nevendra K; Chonco, Louis; Ijumba, Nelson M; Chetty, Leon; Govender, Thavendran; Parboosing, Raveen; Davidson, Innocent E

    2016-09-01

    Corona discharges are commonly utilized for numerous practical applications, including bio-technological ones. The corona induced transfer of normally impermeant molecules into the interior of biological cells has recently been successfully demonstrated. The exact nature of the interaction of the corona discharge with a cell membrane is still unknown, however, previous studies have suggested that it is either the electric fields produced by ions or the chemical interaction of the reactive species that result in the disruption of the cell membrane. This disruption of the cell membrane allows molecules to permeate into the cell. Corona discharge current constitutes a series of pulses, and it is during these pulses that the ions and reactive species are produced. It stands to reason, therefore, that the nature of these corona pulses would have an influence on the level of cell permeabilization and cell destruction. In this investigation, an analysis of the width, rise-time, characteristic frequencies, magnitude, and repetition rate of the nanosecond pulses was carried out in order to establish the relationship between these factors and the levels of cell membrane permeabilization and cell destruction. Results obtained are presented and discussed.

  14. New Simulation Method of New HV Power Supply for Industrial Microwave Generators with N=2 Magnetrons

    Directory of Open Access Journals (Sweden)

    N. El Ghazal

    2013-01-01

    Full Text Available This original work treats a new simulation method of a new type of high voltage power supply for microwave generators with N magnetrons (treated case: N=2 magnetrons, used as a source of energy in the industrial applications. This new power supply is composed of a single-phase HV transformer with magnetic leakage flow, supplying two parallel cells, which multiplies the voltage and stabilizes the current. The doubler supplies one magnetron. The transformer is presented by its p equivalent circuit. Each inductance of the model is characterized by its relation "flow-current". In this paper, we present a new approach validation of the p model of the special transformer using Matlab-Simulink code. The theoretical results compared with the experimental measurements, is in good agreement with them. The use of this tool Matlab-Simulink, has allowed us to confirm the possibility of the operation of this new system without interaction between magnetrons, with a view to a possible optimization which lead to reduce the weight, the volume and the cost of implementation while ensuring the process of regulating the current in each magnetron.

  15. An organic integrated capacitive DC-DC up-converter

    NARCIS (Netherlands)

    Marien, H.; Steyaert, M.; Steudel, S.; Vicca, P.; Smout, S.; Gelinck, G.H.; Heremans, P.L.

    2010-01-01

    In this paper a fully integrated organic DC-DC upconverter is presented in a pentacene p-type only technology. This 3-stage Dickson converter reaches a voltage conversion factor of 3 for a purely capacitive load and 2.5 for a 10 μA load current. The maximal output voltage goes up to 75 V and the Dic

  16. It does not always have to be three-phase current. Digitalisation makes dc drives still attractive. Es muss nicht immer Drehstrom sein. Digitalisierung macht Gleichstromantriebe weiter attraktiv

    Energy Technology Data Exchange (ETDEWEB)

    Heinrich, W. (ABB Antriebstechnik GmbH, Lampertheim (Germany))

    1992-01-31

    The stormy development of three-phase drives has replaced the dc systems in mechanical engineering and plant engineering partially, but the dc drive has managed to preserve its attractivity. Digitalisation sees to it. The progress made here is proved by the example a digital compact power converter of the second generation. (orig.).

  17. Surface magnetic properties of Co{sub 69}Fe{sub 4}Si{sub 15}B{sub 12} when DC and AC currents flow through the ribbon

    Energy Technology Data Exchange (ETDEWEB)

    Fal-Miyar, Vanessa [Departamento de Fisica. Universidad de Oviedo, c/ Calvo Sotelo s.n., 33007, Oviedo (Spain); Kurlyandskaya, Galina V. [Universidad del Pais Vasco UPV-EHU, Dpto. Electricidad y Electronica, Apdo. 644, 48080, Bilbao (Spain); Garcia, Jose A. [Departamento de Fisica. Universidad de Oviedo, c/ Calvo Sotelo s.n., 33007, Oviedo (Spain); Elbaile, Laura [Departamento de Fisica. Universidad de Oviedo, c/ Calvo Sotelo s.n., 33007, Oviedo (Spain)]. E-mail: elbaile@uniovi.es; Crespo, Rosario D. [Departamento de Fisica. Universidad de Oviedo, c/ Calvo Sotelo s.n., 33007, Oviedo (Spain); Tejedor, Marcos [Departamento de Fisica. Universidad de Oviedo, c/ Calvo Sotelo s.n., 33007, Oviedo (Spain)

    2006-09-15

    Surface magnetic properties of Co{sub 69}Fe{sub 4}Si{sub 15}B{sub 12} amorphous ribbons with longitudinal and transverse anisotropies when an electrical current flows through the ribbons has been studied. Observations were performed by the transverse magnetooptical Kerr effect. A DC electrical current caused a shift of the transverse hysteresis loop and AC current produced an increase of the coercive field.

  18. DC conduction and breakdown characteristics of Al2O3/cross-linked polyethylene nanocomposites for high voltage direct current transmission cable insulation

    Science.gov (United States)

    Park, Yong-Jun; Kwon, Jung-Hun; Sim, Jae-Yong; Hwang, Ju-Na; Seo, Cheong-Won; Kim, Ji-Ho; Lim, Kee-Joe

    2014-08-01

    We have discussed a cross-linked polyethylene (XLPE) nanocomposite insulating material that is able to DC voltage applications. Nanocomposites, which are composed in polymer matrix mixed with nano-fillers, have received considerable attention because of their potential benefits as dielectrics. The nano-sized alumina oxide (Al2O3)/XLPE nanocomposite was prepared, and three kinds of test, such as DC breakdown, DC polarity reversal breakdown, and volume resistivity were performed. By the addition of nano-sized Al2O3 filler, both the DC breakdown strength and the volume resistivity of XLPE were increased. A little homogeneous space charge was observed in Al2O3/XLPE nanocomposite material in the vicinity of electrode through the polarity reversal breakdown test. From these results, it is thought that the addition of Al2O3 nano-filler is effective for the improvement of DC electrical insulating properties of XLPE.

  19. Photovoltaic combiner box system based on DC leakage current detection%基于直流漏电流检测的光伏汇流箱系统

    Institute of Scientific and Technical Information of China (English)

    陈鸣; 肖慧明

    2016-01-01

    A novel method of detecting the ground leakage current by photovoltaic DC system to explore the positive and negative poles’earth resistance of the photovoltaic circuit and judge the earth fault branch of the photovoltaic circuit is pro⁃posed,which takes C8051F020 as the control center. A novel photovoltaic DC grounding detection system was developed. The current detection function of photovoltaic confluence is used to search which branche in the photovoltaic array has different cur⁃rent value,and find out the earth fault of the photovoltaic array circuit in combination with the detected positive and negative poles’earth resistance of the photovoltaic circuit. It is unnecessary to add any signals to the photovoltaic branches in this meth⁃od. This method has no adverse effect on the photovoltaic system. The detection results are not affected by the distribution capaci⁃tance,and is relatively simple.%以C8051F020型单片机为控制中心,采用一种通过检测光伏直流系统对地漏电流来探测光伏回路正负极接地电阻和判断光伏回路接地故障支路的新方法,研制出新的光伏直流接地探测系统。利用光伏汇流的电流检测功能,寻找出光伏阵列电流数值不同的支路,结合探测光伏回路正负极接地电阻,从而发现光伏阵列回路的对地故障。该方法无须给光伏支路施加任何信号,对光伏系统无任何不良影响,检测结果不受分布电容的影响,检测电路相对简单。

  20. PWM DC/DC Converter

    OpenAIRE

    Chen, Juan

    2008-01-01

    This report is the result of a Master Thesis work done at Seaward Electronics Inc. in Beijing, China from June to December in 2007. The main goal for this thesis is to verify and improve the performance of Honey-PWM DC-DC converter, which has been fabricated by a standard 0.6um CMOS processes. The project was started with studying of Buck converter structure. After the understanding of the converter structure, the project goes in to the analyses phase for each sub-cells, including the theory,...

  1. Active pre-filters for dc/dc Boost regulators

    Directory of Open Access Journals (Sweden)

    Carlos Andrés Ramos-Paja

    2014-07-01

    Full Text Available This paper proposes an active pre-filter to mitigate the current harmonics generated by classical dc/dc Boost regulators, which generate current ripples proportional to the duty cycle. Therefore, high output voltage conditions, i.e., high voltage conversion ratios, produce high current harmonics that must be filtered to avoid damage or source losses. Traditionally, these current components are filtered using electrolytic capacitors, which introduce reliability problems because of their high failure rate. The solution introduced in this paper instead uses a dc/dc converter based on the parallel connection of the Boost canonical cells to filter the current ripples generated by the Boost regulator, improving the system reliability. This solution provides the additional benefits of improving the overall efficiency and the voltage conversion ratio. Finally, the solution is validated with simulations and experimental results.

  2. DC to DC power converters and methods of controlling the same

    Science.gov (United States)

    Steigerwald, Robert Louis; Elasser, Ahmed; Sabate, Juan Antonio; Todorovic, Maja Harfman; Agamy, Mohammed

    2012-12-11

    A power generation system configured to provide direct current (DC) power to a DC link is described. The system includes a first power generation unit configured to output DC power. The system also includes a first DC to DC converter comprising an input section and an output section. The output section of the first DC to DC converter is coupled in series with the first power generation unit. The first DC to DC converter is configured to process a first portion of the DC power output by the first power generation unit and to provide an unprocessed second portion of the DC power output of the first power generation unit to the output section.

  3. 一个新的适用于无刷直流电机驱动的单电流传感器技术%A Novel Current Sensor Technique for Brushless DC Motor Drives

    Institute of Scientific and Technical Information of China (English)

    谭徽; 江建中; 汪信尧; 王勇

    2000-01-01

    The torque output in a permanent magnet brushless DC motor (BLDCM) is usually controlled by regulating the motor phase currents. In this paper, three kinds of PWM strategies together with some critical review on traditional current measurements in a BLDCM drive system are discussed. A novel method for assessing the PWM information and measuring the motor phase currents by a dc link current sensor is proposed. An attractive feature of the proposed method is the simplicity with the current sample processing because there is no need to incorporate the conduction information of the power switches or diodes. Only the single sided PWM or the double sided complementary PWM is needed with the proposed technique.

  4. Annealing effects of sapphire substrate on properties of ZnO films grown by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Y.Z. [South China Normal University, School of Physics and Telecommunication Engineering, Guangzhou (China); Xu, J. [Chinese Academy of Sciences, Shanghai Institute of Optics and Fine Mechanics, P.O. Box 800-211, Shanghai (China)

    2007-09-15

    The annealing effects of sapphire substrates on the quality of epitaxial ZnO films grown by dc reactive magnetron sputtering were studied. The atomic steps formed on (0001) sapphire ({alpha}-Al{sub 2}O{sub 3}) substrates surface by annealing at high temperature were analyzed by atomic force microscopy. Their influence on the growth of ZnO films was examined by X-ray diffraction and photoluminescence measurements. Experimental results indicate that the film quality is strongly affected by annealing treatment of the sapphire substrate surface. The optimum annealing temperature of sapphire substrates for ZnO grown by magnetron sputtering is 1400 C for 1 h in air. (orig.)

  5. Microstructural evaluation of NiTi-based films deposited by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Crăciunescu, Corneliu M., E-mail: corneliu.craciunescu@upt.ro; Mitelea, Ion, E-mail: corneliu.craciunescu@upt.ro; Budău, Victor, E-mail: corneliu.craciunescu@upt.ro [Department of Materials and Manufacturing Engineering, Politehnica University of Timisoara (Romania); Ercuţa, Aurel [Department of Materials and Manufacturing Engineering, Politehnica University of Timisoara and Department of Physics, West University Timisoara (Romania)

    2014-11-24

    Shape memory alloy films belonging to the NiTi-based systems were deposited on heated and unheated substrates, by magnetron sputtering in a custom made system, and their structure and composition was analyzed using electron microscopy. Several substrates were used for the depositions: glass, Cu-Zn-Al, Cu-Al-Ni and Ti-NiCu shape memory alloy ribbons and kapton. The composition of the Ti-Ni-Cu films showed limited differences, compared to the one of the target and the microstructure for the DC magnetron sputtering revealed crystallized structure with features determined on peel off samples from a Si wafer. Both inter and transcrystalline fractures were observed and related to the interfacial stress developed on cooling from deposition temperature.

  6. Reduction in Current Consumption of Small DC Motor with Rare-Earth Flexible Bonded Magnets Prepared by Powder Compacting Press and Hot Rolling

    Science.gov (United States)

    Yamashita, Fumitoshi; Watanabe, Akihiko; Fukunaga, Hirotoshi

    The usage of high-performance rare-earth magnets is one of the key technologies in the development of efficient small motors. Ring-shaped melt-spun Nd-Fe-B bonded magnets, prepared using a powder compacting press and/or injection molding, are generally used in typical applications to small efficient motors. For exploiting the maximum characteristics according to the variety of magnetic powder, however, the preparation method of the magnet, the magnet form, and the motor design needs to be changed for high-productivity as well as for improving total performance, including the magnetic properties of bonded magnets. This paper reports recent achievements in new preparation processes for rare-earth bonded magnets and small motors using new materials other than Nd-Fe-B melt-spun powder. This paper especially focuses on the method for maximally exploiting certain rare-earth magnetic powders . Furthermore, reduction in the current consumption of the small DC motor using the developed technique is reported.

  7. Characteristics of W Doped Nanocrystalline Carbon Films Prepared by Unbalanced Magnetron Sputtering.

    Science.gov (United States)

    Park, Yong Seob; Park, Chul Min; Kim, Nam-Hoon; Kim, Jae-Moon

    2016-05-01

    Nanocrystalline tungsten doped carbon (WC) films were prepared by unbalanced magnetron sputtering. Tungsten was used as the doping material in carbon thin films with the aim of application as a contact strip in an electric railway. The structural, physical, and electrical properties of the fabricated WC films with various DC bias voltages were investigated. The films had a uniform and smooth surface. Hardness and frication characteristics of the films were improved, and the resistivity and sheet resistance decreased with increasing negative DC bias voltage. These results are associated with the nanocrystalline WC phase and sp(2) clusters in carbon networks increased by ion bombardment enhanced with increasing DC bias voltage. Consequently, the increase of sp(2) clusters containing WC nanocrystalline in the carbon films is attributed to the improvement in the physical and electrical properties.

  8. Failures’ Study of a New Character Three-Phase High Voltage Supply for industrial Microwave Generators with one magnetrons per Phase

    Directory of Open Access Journals (Sweden)

    R. Batit

    2016-04-01

    Full Text Available This article treats the development of one of the equivalent electrical models for a single phase power supply for one magnetron; in particular that of its own high voltage (HV transformer newly dimensioned. This single phase system supplies a voltage doubler and current stabilizer circuit, which supplies a single magnetron. Then, by star connecting the three identical models of the single-phase power supply for one magnetron, we obtain a new character three-phase high voltage power supply for industrial microwave generators with one magnetron per phase. The simulation with EMTP (Electro Magnetic Transcients Program in nominal operation has given the theoretical results close to the experimental measurements. Finally, the magnetrons’ failure of the microwave generator was also treated and allowed to observe the interaction’s influence between magnetrons; also the regulation of the anode current has been achieved successfully.

  9. Preliminary Results of Nb Thin Film Coating for HIE-ISOLDE SRF Cavities Obtained by Magnetron Sputtering

    CERN Document Server

    Sublet, A; Calatroni, S; D'Elia, A; Jecklin, N; Mondino, I; Prunet, S; Therasse, M; Venturini Delsolaro, W; Zhang, P

    2013-01-01

    In the context of the HIE-ISOLDE upgrade at CERN, several new facilities for the niobium sputter coating of QWR-type superconducting RF accelerating cavities have been developed, built, and successfully operated. In order to further optimize the production process of these cavities the magnetron sputtering technique has been further investigated and continued as an alternative to the already successfully operational DC bias diode sputtering method. The purpose of this poster is to present the results obtained with this technique. The Nb thickness profile along the cavity and its correlation with the electro-magnetic field distribution inside the cavity are discussed. Film structure, morphology and Residual Resistivity Ratio (RRR) will be considered as well and compared with films obtained by DC bias diode sputtering. Finally these results will be compared with RF measurement of a production-like magnetron-coated cavity.

  10. 靶电流对磁控溅射减摩复合镀层组织与性能的影响%Influence of Target Current on the Microstructure and Properties of the Antifriction Composite Coatings Prepared by Magnetron Sputtering

    Institute of Scientific and Technical Information of China (English)

    郭巧琴; 李建平

    2016-01-01

    The bearing prepared by magnetron sputtering depends on importing .The AlSn20/C composite coatings on bearing alloy were prepared by magnetron sputtering .The influence of graphite target current on the microstructure ,hardness ,corrosion resistance ,bonding force and friction coefficient was analyzed .The results show :While the graphite target current is 1 .0 A ,the surface structure is uniform ,the atoms of Al and Sn match well .The hardness of the coating is inversely proportional to the graphite target current ,in the scope of 1 .0 ~ 1 .2 A .While the graphite target current is 1 .0 A ,its hardness is the hardest ,i .e 601 HV0 .025 ,the bonding force between coating and matrix is 33 N ,and the friction coefficient achieves 0 .12 .%目前我国溅镀轴瓦依赖进口.采用非平衡磁控溅射在轴承合金表面制备了A lS n20/C复合镀层,分析了碳靶电流的改变对轴承合金表面复合镀层的表面形貌、硬度、耐蚀性、膜基结合力以及摩擦系数等的影响.研究结果表明:当碳靶电流在1.0~1.2A时,非平衡磁控溅射A lS n20/C复合镀层;当碳靶电流为1.0 A 时,镀层表面组织均匀,铝原子、锡原子和碳原子达到最佳匹配;当碳靶电流在1.0~1.2A时,镀层硬度与碳靶电流成反比,当其为1.0 A时,镀层硬度最高为601 H V0.025,结合力最高可达33 N ,镀层的摩擦系数最低达到0.12.

  11. Magnetron sputtered nanostructured cadmium oxide films for ammonia sensing

    Energy Technology Data Exchange (ETDEWEB)

    Dhivya, P. [Functional Nanomaterials and Devices Lab, Centre for Nanotechnology and Advanced Biomaterials and School of Electrical and Electronics Engineering, SASTRA University, Thanjavur-613 401 (India); Prasad, A.K. [Surface and Nanoscience Division, Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam-603 102 (India); Sridharan, M., E-mail: m.sridharan@ece.sastra.edu [Functional Nanomaterials and Devices Lab, Centre for Nanotechnology and Advanced Biomaterials and School of Electrical and Electronics Engineering, SASTRA University, Thanjavur-613 401 (India)

    2014-06-01

    Nanostructured cadmium oxide (CdO) films were deposited on to glass substrates by reactive dc magnetron sputtering technique. The depositions were carried out for different deposition times in order to obtain films with varying thicknesses. The CdO films were polycrystalline in nature with cubic structure showing preferred orientation in (1 1 1) direction as observed by X-ray diffraction (XRD). Field-emission scanning electron microscope (FE-SEM) micrographs showed uniform distribution of grains of 30–35 nm size and change in morphology from spherical to elliptical structures upon increasing the film thickness. The optical band gap value of the CdO films decreased from 2.67 to 2.36 eV with increase in the thickness. CdO films were deposited on to interdigitated electrodes to be employed as ammonia (NH{sub 3}) gas sensor. The fabricated CdO sensor with thickness of 294 nm has a capacity to detect NH{sub 3} as low as 50 ppm at a relatively low operating temperature of 150 °C with quick response and recovery time. - Highlights: • Nanostructured CdO films were deposited on to glass substrates using magnetron sputtering. • Deposition time was varied in order to obtain films with different thicknesses. • The CdO films were polycrystalline in nature with preferred orientation along (1 1 1) direction. • The optical bandgap values of the films decreased on increasing the thickness of the films. • CdO films with different thickness such as 122, 204, 294 nm was capable to detect NH{sub 3} down to 50 ppm at operating temperature of 150 °C.

  12. Multi-frequency recirculating planar magnetrons

    Science.gov (United States)

    Greening, Geoffrey B.; Jordan, Nicholas M.; Exelby, Steven C.; Simon, David H.; Lau, Y. Y.; Gilgenbach, Ronald M.

    2016-08-01

    The multi-frequency recirculating planar magnetron (MFRPM) is the first magnetron capable of simultaneous generation of significantly different output frequencies (1 and 2 GHz) in a single operating pulse. Design and simulation of a prototype MFRPM were followed by hardware fabrication and experimental verification using the Michigan Electron Long Beam Accelerator with a Ceramic insulator at -300 kV, 1-5 kA, and 0.14-0.23 T axial magnetic field. Preliminary results demonstrated simultaneous generation of microwave pulses near 1 GHz and 2 GHz at powers up to 44 MW and 21 MW, respectively, with peak total efficiencies up to 9%.

  13. Installation and commissioning of the new Fermi National Accelerator Laboratory H- Magnetron

    Energy Technology Data Exchange (ETDEWEB)

    Bollinger, D. S., E-mail: bollinger@fnal.gov [Proton Source Department, Fermi National Accelerator Laboratory, Batavia, Illinois 60510 (United States)

    2014-02-15

    The Fermi National Accelerator Laboratory (FNAL) 40 year old Cockcroft-Walton 750 keV injectors with slit aperture magnetron ion sources have been replaced with a circular aperture magnetron, Low Energy Beam Transport, Radio Frequency Quadrupole Accelerator, and Medium Energy Beam Transport, as part of the FNAL Proton Improvement Plan. The injector design is based on a similar system at Brookhaven National Laboratory. The installation, commissioning efforts, and source operations to date will be covered in this paper along with plans for additional changes to the original design to improve reliability by reducing extractor spark rates and arc current duty factor.

  14. Computer simulation of sputtering of graphite target in magnetron sputtering device with two zones of erosion

    Directory of Open Access Journals (Sweden)

    Bogdanov R.V.

    2015-03-01

    Full Text Available A computer simulation program for discharge in a magnetron sputtering device with two erosion zones was developed. Basic laws of the graphite target sputtering process and transport of sputtered material to the substrate were taken into account in the Monte Carlo code. The results of computer simulation for radial distributions of density and energy flux of carbon atoms on the substrate (at different values of discharge current and pressure of the working gas confirmed the possibility of obtaining qualitative homogeneous films using this magnetron sputtering device. Also the discharge modes were determined for this magnetron sputtering device, in which it was possible to obtain such energy and density of carbon atoms fluxes, which were suitable for deposition of carbon films containing carbon nanotubes and other nanoparticles.

  15. Isolerad DC/DC-omvandlare

    OpenAIRE

    Andersson, Martin

    2011-01-01

    1 SammanfattningCrossControl är ett företag som bland annat tillverkar integrerade datorlösningar. Datorerna drivs normalt med 18-30 VDC och förbrukar som mest 50W. Datorerna säljs till flertalet olika kunder som monterar dem i allt från skogsmaskiner till tåg. I de olika fordonen varierar spänningen i de befintliga elnäten. Detta skapar behovet av att omvandla spänningen till en nivå som datorerna klarar av. En sådan apparat kallas DC/DC-omvandlare. Spänningsomvandling kan utföras genom linj...

  16. Effect of thickness on surface morphology, optical and humidity sensing properties of RF magnetron sputtered CCTO thin films

    Science.gov (United States)

    Ahmadipour, Mohsen; Ain, Mohd Fadzil; Ahmad, Zainal Arifin

    2016-11-01

    In this study, calcium copper titanate (CCTO) thin films were deposited on ITO substrates successfully by radio frequency (RF) magnetron sputtering method in argon atmosphere. The CCTO thin films present a polycrystalline, uniform and porous structure. The surface morphology, optical and humidity sensing properties of the synthesized CCTO thin films have been studied by X-ray diffraction (XRD), atomic force microscopy (AFM), field emission scanning electron microscopy (FESEM), energy-dispersive X-ray spectroscopy (EDX), UV-vis spectrophotometer and current-voltage (I-V) analysis. XRD and AFM confirmed that the intensity of peaks and pore size of CCTO thin films were enhanced by increasing the thin films. Tauc plot method was adopted to estimate the optical band gaps. The surface structure and energy band gaps of the deposited films were affected by film thickness. Energy band gap of the layers were 3.76 eV, 3.68 eV and 3.5 eV for 200 nm, 400 nm, and 600 nm CCTO thin films layer, respectively. The humidity sensing properties were measured by using direct current (DC) analysis method. The response times were 12 s, 22 s, and 35 s while the recovery times were 500 s, 600 s, and 650 s for 200 nm, 400 nm, and 600 nm CCTO thin films, respectively at humidity range of 30-90% relative humidity (RH).

  17. High Efficiency Interleaved Active Clamped Dc-Dc Converter with Fuel Cell for High Voltage Applications

    Directory of Open Access Journals (Sweden)

    Sona P

    2014-02-01

    Full Text Available A high efficiency interleaved ZVS active clamped current fed dc-dc converter is proposed in this paper specially used for fuel cell applications. As the fuel cell output is very low we are in need of a step up dc-dc converter. Here a current fed dc-dc converter is used. Two current fed dc-dc converters are interleaved by connecting their inputs in parallel and outputs in series. With this proposed methodology input current ripples in the fuel cell stacks can be reduced and a regulated output voltage ripples can be obtained. The active clamping circuit used in this model absorbs the turn off voltage spikes hence low voltage devices with low on state resistance can be used.Voltage doubler circuits will give double the output voltage than normal with smaller transformer turns ratio and flexibility. The proposed method is simulated in MATLAB for verifying the accuracy of the proposed design.

  18. Efficient Design in a DC to DC Converter Unit

    Science.gov (United States)

    Bruemmer, Joel E.; Williams, Fitch R.; Schmitz, Gregory V.

    2002-01-01

    Space Flight hardware requires high power conversion efficiencies due to limited power availability and weight penalties of cooling systems. The International Space Station (ISS) Electric Power System (EPS) DC-DC Converter Unit (DDCU) power converter is no exception. This paper explores the design methods and tradeoffs that were utilized to accomplish high efficiency in the DDCU. An isolating DC to DC converter was selected for the ISS power system because of requirements for separate primary and secondary grounds and for a well-regulated secondary output voltage derived from a widely varying input voltage. A flyback-current-fed push-pull topology or improved Weinberg circuit was chosen for this converter because of its potential for high efficiency and reliability. To enhance efficiency, a non-dissipative snubber circuit for the very-low-Rds-on Field Effect Transistors (FETs) was utilized, redistributing the energy that could be wasted during the switching cycle of the power FETs. A unique, low-impedance connection system was utilized to improve contact resistance over a bolted connection. For improved consistency in performance and to lower internal wiring inductance and losses a planar bus system is employed. All of these choices contributed to the design of a 6.25 KW regulated dc to dc converter that is 95 percent efficient. The methodology used in the design of this DC to DC Converter Unit may be directly applicable to other systems that require a conservative approach to efficient power conversion and distribution.

  19. Optical properties and residual stress in Nb-Si composite films prepared by magnetron cosputtering.

    Science.gov (United States)

    Tang, Chien-Jen; Porter, Glen Andrew; Jaing, Cheng-Chung; Tsai, Fang-Ming

    2015-02-01

    This paper investigates Nb-Si metal composite films with various proportions of niobium in comparison to pure Nb films. Films were prepared by two-target RF-DC magnetron cosputtering deposition. The optical properties and residual stress were analyzed. A composition of Nb(0.74)Si(0.26) was chosen toward the design and fabrication of solar absorbing coatings having a high absorption in a broad wavelength range, a low residual stress, and suitable optical constants. The layer thicknesses and absorption characteristics of the Nb-Si composite films adhere more closely to the design than other coatings made of dielectric film materials.

  20. Development of Nb3Sn coatings by magnetron sputtering for SRF cavities

    CERN Document Server

    Rosaz, G.; Leaux, F.; Motschmann, F.; Mydlarz, Z.; Taborelli, M.; Vollenberg, W.

    2016-01-01

    This paper presents the first results obtained on DC magnetron sputtering of Nb3Sn thin films dedicated to superconducting radio frequency cavities (SRF). Nb/Sn ratio of 3.76 and 3.2 have been obtained for Ar coating pressures of respectively 1.10-3 mbar and 5.10-2 mbar. According to XRD analyses both coating pressures lead to amorphous Nb3Sn layers that are not superconducting. Afterward, one coating has been annealed at 700°C, 750°C and 800°C under vacuum for 24h and exhibited for the three different temperatures the A15 cubic phase.

  1. Magnetron sputtering cluster apparatus for formation and deposition of size-selected metal nanoparticles

    DEFF Research Database (Denmark)

    Hanif, Muhammad; Popok, Vladimir

    2015-01-01

    The experimental setup utilizing a DC magnetron sputtering source for production of metal clusters, their size (mass) selection and following deposition in high vacuum is described. The source is capable to form clusters of various metals, for example, copper, silver, gold etc. Cluster size...... selection is achieved using an electrostatic quadrupole mass selector. The deposited silver clusters are studied using atomic force microscopy. The height distributions show typical relative standard size deviation of 9-13% for given sizes in the range between 5-23 nm. Thus, the apparatus demonstrates good...

  2. STUDY ON Ni-Cr SYSTEM SOLAR SELECTIVE THIN FILMS PREPARED BY MAGNETRON REACTIVE SPUTTERING PROCESS

    Institute of Scientific and Technical Information of China (English)

    B.W. Wang; H. Shen

    2002-01-01

    Ni-Cr System solar selective thin solid films were prepared by d.c. magnetron reactivesputtering under the atmosphere of O2 and N2. Ni-Cr alloy was chosen as targetmaterial and copper sheets as substrate. Using SEM, Spectrophotometer and Talystepto analyze the relations between the selective characteristic and the structure, theformation and the thickness of the thin films. The aim is to obtain good solar selectivethin films with high absorptance and low emittance, which is applied to flat plate solarheat collectors.

  3. Development of magnetron sputtering simulator with GPU parallel computing

    Science.gov (United States)

    Sohn, Ilyoup; Kim, Jihun; Bae, Junkyeong; Lee, Jinpil

    2014-12-01

    Sputtering devices are widely used in the semiconductor and display panel manufacturing process. Currently, a number of surface treatment applications using magnetron sputtering techniques are being used to improve the efficiency of the sputtering process, through the installation of magnets outside the vacuum chamber. Within the internal space of the low pressure chamber, plasma generated from the combination of a rarefied gas and an electric field is influenced interactively. Since the quality of the sputtering and deposition rate on the substrate is strongly dependent on the multi-physical phenomena of the plasma regime, numerical simulations using PIC-MCC (Particle In Cell, Monte Carlo Collision) should be employed to develop an efficient sputtering device. In this paper, the development of a magnetron sputtering simulator based on the PIC-MCC method and the associated numerical techniques are discussed. To solve the electric field equations in the 2-D Cartesian domain, a Poisson equation solver based on the FDM (Finite Differencing Method) is developed and coupled with the Monte Carlo Collision method to simulate the motion of gas particles influenced by an electric field. The magnetic field created from the permanent magnet installed outside the vacuum chamber is also numerically calculated using Biot-Savart's Law. All numerical methods employed in the present PIC code are validated by comparison with analytical and well-known commercial engineering software results, with all of the results showing good agreement. Finally, the developed PIC-MCC code is parallelized to be suitable for general purpose computing on graphics processing unit (GPGPU) acceleration, so as to reduce the large computation time which is generally required for particle simulations. The efficiency and accuracy of the GPGPU parallelized magnetron sputtering simulator are examined by comparison with the calculated results and computation times from the original serial code. It is found that

  4. Particle contamination formation and detection in magnetron sputtering processes

    Energy Technology Data Exchange (ETDEWEB)

    Selwyn, G.S. [Los Alamos National Lab., NM (United States); Weiss, C.A. [Materials Research Corp., Congers, NY (United States). Sputtering Systems Div.; Sequeda, F.; Huang, C. [Seagate Peripherals Disk Div., Milpitas, CA (United States)

    1996-10-01

    Defects caused by particulate contamination are an important concern in the fabrication of thin film products. Often, magnetron sputtering processes are used for this purpose. Particle contamination can cause electrical shorting, pin holes, problems with photolithography, adhesion failure, as well as visual and cosmetic defects. Particle contamination generated during thin film processing can be detected using laser light scattering, a powerful diagnostic technique that provides real-time, {ital in-situ} imaging of particles > 0.3 {mu}m in diameter. Using this technique, the causes, sources and influences on particles in plasma and non-plasma and non-plasma processes may be independently evaluated and corrected. Several studies employing laser light scattering have demonstrated both homogeneous and heterogeneous causes of particle contamination. In this paper, we demonstrate that the mechanisms for particle generation, transport and trapping during magnetron sputter deposition are different from the mechanisms reported in previously studied plasma etch processes. During magnetron sputter deposition, one source of particle contamination is linked to portions of the sputtering target surface exposed to weaker plasma density. In this region, film redeposition is followed by filament or nodule growth and enhanced trapping which increases filament growth. Eventually the filaments effectively ``short circuit`` the sheath, causing high currents to flow through these features. This, in turn, causes heating failure of the filament fracturing and ejecting the filaments into the plasma and onto the substrate. Evidence of this effect has been observed in semiconductor (IC) fabrication and storage disk manufacturing. Discovery of this mechanism in both technologies suggests that this mechanism may be universal to many sputtering processes.

  5. The Development and Application of the Magnetron,

    Science.gov (United States)

    1982-03-31

    of *medicine. The power of the magnetron used is from several tens of watts to several hundred watts. Microwave physiotherapy has been used in...clinical practice for the fast cure of arthritis , rheumatism and the subsidence of swelling. Therapeutic results have been excellent. In recent years

  6. Plasma properties of RF magnetron sputtering system using Zn target

    Energy Technology Data Exchange (ETDEWEB)

    Nafarizal, N.; Andreas Albert, A. R.; Sharifah Amirah, A. S.; Salwa, O.; Riyaz Ahmad, M. A. [Microelectronic and Nanotechnology - Shamsuddin Research Centre (MiNT-SRC), Faculty of Electrical and Electronic Engineering, Universiti Tun Hussein Onn Malaysia 86400 Parit Raja, Batu Pahat, Johor (Malaysia)

    2012-06-29

    In the present work, we investigate the fundamental properties of magnetron sputtering plasma using Zn target and its deposited Zn thin film. The magnetron sputtering plasma was produced using radio frequency (RF) power supply and Argon (Ar) as ambient gas. A Langmuir probe was used to collect the current from the plasma and from the current intensity, we calculate the electron density and electron temperature. The properties of Zn sputtering plasma at various discharge conditions were studied. At the RF power ranging from 20 to 100 W and gas pressure 5 mTorr, we found that the electron temperature was almost unchanged between 2-2.5 eV. On the other hand, the electron temperature increased drastically from 6 Multiplication-Sign 10{sup 9} to 1 Multiplication-Sign 10{sup 10}cm{sup -3} when the discharge gas pressure increased from 5 to 10 mTorr. The electron microscope images show that the grain size of Zn thin film increase when the discharge power is increased. This may be due to the enhancement of plasma density and sputtered Zn density.

  7. Investigation into the Control Methods to Reduce the DC-Link Capacitor Ripple Current in a Back-to-Back Converter

    DEFF Research Database (Denmark)

    Qin, Zian; Wang, Huai; Blaabjerg, Frede

    2014-01-01

    Three-phase back-to-back converters have a wide range of applications (e.g. wind turbines) in which the reliability and cost-effectiveness are of great concern. Among other components and interconnections, DC-link capacitors are one of the weak links influenced by environmental stresses (e.g. amb......-link or a reduced DC-link size for fulfilling a specified lifetime target. The proposed control strategies have been demonstrated on a study case of a 1.5 kW converter prototype. The experimental verifications are in well agreement with the theoretical analyses....

  8. Combined optical emission and resonant absorption diagnostics of an Ar-O{sub 2}-Ce-reactive magnetron sputtering discharge

    Energy Technology Data Exchange (ETDEWEB)

    El Mel, A.A. [Chimie des Interactions Plasma-Surface (ChIPS), Research Institute for Materials Science and Engineering, Université de Mons, Place du Parc 23, Mons B-7000 (Belgium); Institut des Matériaux Jean Rouxel, Université de Nantes, CNRS, 2 rue de la Houssinière B.P. 32229, Nantes Cedex 3 44322 (France); Ershov, S. [Chimie des Interactions Plasma-Surface (ChIPS), Research Institute for Materials Science and Engineering, Université de Mons, Place du Parc 23, Mons B-7000 (Belgium); Britun, N., E-mail: nikolay.britun@umons.ac.be [Chimie des Interactions Plasma-Surface (ChIPS), Research Institute for Materials Science and Engineering, Université de Mons, Place du Parc 23, Mons B-7000 (Belgium); Ricard, A. [Université de Toulouse, UPS, INPT, LAPLACE (Laboratoire Plasma et Conversion d' Energie), 118 route de Narbonne, Toulouse Cedex 9 F-31062 (France); Konstantinidis, S. [Chimie des Interactions Plasma-Surface (ChIPS), Research Institute for Materials Science and Engineering, Université de Mons, Place du Parc 23, Mons B-7000 (Belgium); Snyders, R. [Chimie des Interactions Plasma-Surface (ChIPS), Research Institute for Materials Science and Engineering, Université de Mons, Place du Parc 23, Mons B-7000 (Belgium); Materia Nova Research Center, Parc Initialis, Avenue Copernic 1, Mons B-7000 (Belgium)

    2015-01-01

    We report the results on combined optical characterization of Ar-O{sub 2}-Ce magnetron sputtering discharges by optical emission and resonant absorption spectroscopy. In this study, a DC magnetron sputtering system equipped with a movable planar magnetron source with a Ce target is used. The intensities of Ar, O, and Ce emission lines, as well as the absolute densities of Ar metastable and Ce ground state atoms are analyzed as a function of the distance from the magnetron target, applied DC power, O{sub 2} content, etc. The absolute number density of the Ar{sup m} is found to decrease exponentially as a function of the target-to-substrate distance. The rate of this decrease is dependent on the sputtering regime, which should be due to the different collisional quenching rates of Ar{sup m} by O{sub 2} molecules at different oxygen contents. Quantitatively, the absolute number density of Ar{sup m} is found to be equal to ≈ 3 × 10{sup 8} cm{sup −3} in the metallic, and ≈ 5 × 10{sup 7} cm{sup −3} in the oxidized regime of sputtering, whereas Ce ground state densities at the similar conditions are found to be few times lower. The absolute densities of species are consistent with the corresponding deposition rates, which decrease sharply during the transition from metallic to poisoned sputtering regime. - Highlights: • Optical emission and resonant absorption spectroscopy are employed to study Ar-O{sub 2}-Ce magnetron sputtering discharges. • The density of argon metastables is found to decrease exponentially when increasing the target-to-substrate distance. • The collision-quenching rates of Ar{sup m} by O{sub 2} molecules at different oxygen contents is demonstrated. • The deposition rates of cerium and cerium oxide thin films decrease sharply during the transition from the metallic to the poisoned sputtering regime.

  9. Adaptable DC offset correction

    Science.gov (United States)

    Golusky, John M. (Inventor); Muldoon, Kelly P. (Inventor)

    2009-01-01

    Methods and systems for adaptable DC offset correction are provided. An exemplary adaptable DC offset correction system evaluates an incoming baseband signal to determine an appropriate DC offset removal scheme; removes a DC offset from the incoming baseband signal based on the appropriate DC offset scheme in response to the evaluated incoming baseband signal; and outputs a reduced DC baseband signal in response to the DC offset removed from the incoming baseband signal.

  10. Chemical and Morphological Characterization of Magnetron Sputtered at Different Bias Voltages Cr-Al-C Coatings

    Directory of Open Access Journals (Sweden)

    Aleksei Obrosov

    2017-02-01

    Full Text Available MAX phases (M = transition metal, A = A-group element, and X = C/N are of special interest because they possess a unique combination of the advantages of both metals and ceramics. Most attention is attracted to the ternary carbide Cr2AlC because of its excellent high-temperature oxidation, as well as hot corrosion resistance. Despite lots of publications, up to now the influence of bias voltage on the chemical bonding structure, surface morphology, and mechanical properties of the film is still not well understood. In the current study, Cr-Al-C films were deposited on silicon wafers (100 and Inconel 718 super alloy by dc magnetron sputtering with different substrate bias voltages and investigated using Scanning Electron Microscopy (SEM, X-ray Photoelectron Spectroscopy (XPS, X-ray Diffraction (XRD, Atomic Force Microscopy (AFM, and nanoindentation. Transmission Electron Microscopy (TEM was used to analyze the correlation between the growth of the films and the coating microstructure. The XPS results confirm the presence of Cr2AlC MAX phase due to a negative shift of 0.6–0.9 eV of the Al2p to pure aluminum carbide peak. The XRD results reveal the presence of Cr2AlC MAX Phase and carbide phases, as well as intermetallic AlCr2. The film thickness decreases from 8.95 to 6.98 µm with increasing bias voltage. The coatings deposited at 90 V exhibit the lowest roughness (33 nm and granular size (76 nm combined with the highest hardness (15.9 GPa. The ratio of Al carbide to carbide-like carbon state changes from 0.12 to 0.22 and correlates with the mechanical properties of the coatings. TEM confirms the columnar structure, with a nanocrystalline substructure, of the films.

  11. Chaos analysis and chaotic EMI suppression of DC-DC converters

    CERN Document Server

    Zhang, Bo

    2014-01-01

    Introduces chaos theory, its analytical methods and the means to apply chaos to the switching power supply design DC-DC converters are typical switching systems which have plenty of nonlinear behaviors, such as bifurcation and chaos. The nonlinear behaviors of DC-DC converters have been studied heavily over the past 20 years, yet researchers are still unsure of the practical application of bifurcations and chaos in switching converters. The electromagnetic interference (EMI), which resulted from the high rates of changes of voltage and current, has become a major design criterion in DC-DC co

  12. Elimination of output voltage oscillations in DC-DC converter using PWM with PI controller

    Directory of Open Access Journals (Sweden)

    Sreenivasappa Veeranna Bhupasandra

    2010-01-01

    Full Text Available In this paper the SIMULINK model of a PWM controlled DC-DC converter is modeled using switching function concept to control the speed of the DC motor. The presence of the voltage oscillation cycles due to higher switching frequency in the DC-DC converter is identified. The effect of these oscillations on the output voltage of the converter, Armature current, Developed torque and Speed of the DC motor is analyzed. In order to minimize the oscillation cycles the PI controller is proposed in the PWM controller.

  13. Thermoelectric properties of n-type Bi{sub 2}Te{sub 2.7}Se{sub 0.3} and p-type Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} thin films deposited by direct current magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Bourgault, D. [Schneider-Electric France, 38TEC/T1, 37 quai Paul Louis Merlin, 38050 Grenoble Cedex 9 (France); Institut Neel/Centre National de la Recherche Scientifique, 25 Avenue des Martyrs, BP 166, 38042 Grenoble Cedex 9 (France)], E-mail: daniel.bourgault@grenoble.cnrs.fr; Garampon, C. Giroud; Caillault, N.; Carbone, L.; Aymami, J.A. [Schneider-Electric France, 38TEC/T1, 37 quai Paul Louis Merlin, 38050 Grenoble Cedex 9 (France)

    2008-10-01

    n-type and p-type thermoelectric thin films have been deposited by direct current magnetron sputtering from n-type Bi{sub 2}Te{sub 2.7}Se{sub 0.3} and p-type Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} targets on glass and Al{sub 2}O{sub 3} substrates. X-ray diffraction and energy dispersive spectrometry combined with electrical measurements such as Seebeck coefficient and electrical resistivity were used for the thermoelectric thin films characterization. It was found that the composition of the sputtered thin films was close to the sputtering target stoichiometry for the tested deposition conditions and that the thin film composition did not seem to be the determinant parameter for the thermoelectrical properties. Indeed, the chamber pressure and plasma power have a greater influence on the thermoelectrical performances of the films. Annealing in Ar atmosphere (250 deg. C for n-type and 300 deg. C for p-type films) enhanced the film crystallization and yield power factors higher than 1 mW/K{sup 2} m.

  14. Recent Operation of the FNAL Magnetron H- Ion Source

    Energy Technology Data Exchange (ETDEWEB)

    Karns, Patrick R. [Fermilab; Bollinger, D. S. [Fermilab; Sosa, A. [Fermilab

    2016-09-06

    This paper will detail changes in the operational paradigm of the Fermi National Accelerator Laboratory (FNAL) magnetron H- ion source due to upgrades in the accelerator system. Prior to November of 2012 the H- ions for High Energy Physics (HEP) experiments were extracted at ~18 keV vertically downward into a 90 degree bending magnet and accelerated through a Cockcroft-Walton accelerating column to 750 keV. Following the upgrade in the fall of 2012 the H- ions are now directly extracted from a magnetron at 35 keV and accelerated to 750 keV by a Radio Frequency Quadrupole (RFQ). This change in extraction energy as well as the orientation of the ion source required not only a redesign of the ion source, but an updated understanding of its operation at these new values. Discussed in detail are the changes to the ion source timing, arc discharge current, hydrogen gas pressure, and cesium delivery system that were needed to maintain consistent operation at >99% uptime for HEP, with an increased ion source lifetime of over 9 months.

  15. Triple voltage dc-to-dc converter and method

    Science.gov (United States)

    Su, Gui-Jia

    2008-08-05

    A circuit and method of providing three dc voltage buses and transforming power between a low voltage dc converter and a high voltage dc converter, by coupling a primary dc power circuit and a secondary dc power circuit through an isolation transformer; providing the gating signals to power semiconductor switches in the primary and secondary circuits to control power flow between the primary and secondary circuits and by controlling a phase shift between the primary voltage and the secondary voltage. The primary dc power circuit and the secondary dc power circuit each further comprising at least two tank capacitances arranged in series as a tank leg, at least two resonant switching devices arranged in series with each other and arranged in parallel with the tank leg, and at least one voltage source arranged in parallel with the tank leg and the resonant switching devices, said resonant switching devices including power semiconductor switches that are operated by gating signals. Additional embodiments having a center-tapped battery on the low voltage side and a plurality of modules on both the low voltage side and the high voltage side are also disclosed for the purpose of reducing ripple current and for reducing the size of the components.

  16. DC-DC converter for discharging energy storage magnets

    Science.gov (United States)

    Eyssa, Yehia M.; Huang, Xianrui

    1994-07-01

    A new DC-DC converter to control the output power delivered from a magnetic energy storage magnet or an equivalent current source is discussed. The circuit consists of: (1) highly coupled transformer (air or iron core) with coupling coefficient better than 0.95; (2) low frequency mechanical or superconducting switches (0.1 - 10 Hz) or high frequency (10 - 1000 Hz) GTO switches depending on the application; and (3) small voltage source (capacitor or battery) to control the output voltage. Two examples illustrating the application of this circuit are discussed. They are a step up dc current converter for use in uninterruptible power supplies and a step down one for use in discharging large current storage coil into a small current load. The efficiency expected to exceed 90%.

  17. "Forback" Dc-To-Dc Converters

    Science.gov (United States)

    Lukemire, Alan T.

    1992-01-01

    Dc-to-dc power-converter circuits called "forback" resemble circuits of standard configurations called "forward", "flyback", and "Cuk". Circuit employs minor modifications to existing topologies, combines advantages, while eliminating disadvantages, of older circuits.

  18. GAS FLOW CONTROL SYSTEM IN REACTIVE MAGNETRON SPUTTERING TECHNOLOGY

    Directory of Open Access Journals (Sweden)

    I. M. Klimovich

    2015-01-01

    Full Text Available  It is known that the discharge parameters and the chemical composition of the particles flux impinging onto the substrate during a reactive magnetron sputtering are unstable. As a result spontaneous transitions between the «metal» mode of the target surface and the «poisoned» mode of the target surface have been observed. This leads to nonrepeatability of the coating compositions from process to process. The aim of this work is to design a gas flow control system for reactive sputtering processes. The control system allows to maintain a steady nonequilibrium state of the magnetron discharge in transition mode where the chemical state of the target surface is unstable. The intensities of spectral lines of the discharge spectrum are proposed as control parameters. Photodiode detectors were used for registration of intensities of spectral lines. A gas flow control system regulates argon and reactive gas flow automatically, using feedback signals from photodiode detectors on the intensities of the spectral lines, vacuum gauge, ion current sensor, sensors of discharge current and voltage. As an example, the process of reactive magnetron Ti-Al-N deposition is considered. The following discharge parameters are controlled during sputtering a composite target based on Ti with Al cylindrical inserts: current, voltage, total pressure of a gas mixture, substrate temperature, bias voltage and current of the substrate. Nitrogen flow was controlled by the spectral line intensity of titanium TiI 506,5 nm. The value of the line intensity is connected with the value of reactivity. Elemental composition and structure of the Ti-Al-N coatings were studied using Rutherford backscattering spectroscopy, scanning electron microscopy and X-ray diffraction. It was found, that stoichiometric Ti-Al-N coatings have a globular structure, enhanced hardness and low friction coefficient in contrast to Ti-Al-N coatings with nonstoichiometric composition, which have a

  19. Spatiotemporal synchronization of drift waves in a magnetron sputtering plasma

    CERN Document Server

    Martines, E; Cavazzana, R; Adámek, J; Antoni, V; Serianni, G; Spolaore, M; Vianello, N

    2014-01-01

    A feedforward scheme is applied for drift waves control in a magnetized magnetron sputtering plasma. A system of driven electrodes collecting electron current in a limited region of the explored plasma is used to interact with unstable drift waves. Drift waves actually appear as electrostatic modes characterized by discrete wavelengths of the order of few centimeters and frequencies of about 100 kHz. The effect of external quasi-periodic, both in time and space, travelling perturbations is studied. Particular emphasis is given to the role played by the phase relation between the natural and the imposed fluctuations. It is observed that it is possible by means of localized electrodes, collecting currents which are negligible with respect to those flowing in the plasma, to transfer energy to one single mode and to reduce that associated to the others. Due to the weakness of the external action, only partial control has been achieved.

  20. Optical Properties of Magnetron sputtered Nickel Thin Films

    Science.gov (United States)

    Twagirayezu, Fidele; Geerts, Wilhelmus J.; Cui, Yubo

    2015-03-01

    The study of optical properties of Nickel (Ni) is important, given the pivotal role it plays in the semiconductor and nano-electronics technology. Ni films were made by DC and RF magnetron sputtering in an ATC Orion sputtering system of AJA on various substrates. The optical properties were studied ex situ by variable angle spectroscopic (220-1000 nm) ellipsometry at room temperature. The data were modeled and analyzed using the Woollam CompleteEase Software fitting ellipsometric and transmission data. Films sputtered at low pressure have optical properties similar to that of Palik. Films sputtered at higher pressure however have a lower refraction index and extinction coefficient. It is expected from our results that the density of the sputtered films can be determined from the ellipsometric quantities. Our experiments also revealed that Ni is susceptible to a slow oxidation changing its optical properties over the course of several weeks. The optical properties of the native oxide differ from those of reactive sputtered NiO similar as found by. Furthermore the oxidation process of our samples is characterized by at least two different time constants.