Influence of growth temperature of transparent conducting oxide layer on Cu(In,Ga)Se2 thin-film solar cells

International Nuclear Information System (INIS)

Cho, Dae-Hyung; Chung, Yong-Duck; Lee, Kyu-Seok; Park, Nae-Man; Kim, Kyung-Hyun; Choi, Hae-Won; Kim, Jeha

2012-01-01

We have studied the influence of growth temperature (T G ) in the deposition of an indium tin oxide (ITO) transparent conducting oxide layer on Cu(In,Ga)Se 2 (CIGS) thin-film solar cells. The ITO films were deposited on i-ZnO/glass and i-ZnO/CdS/CIGS/Mo/glass substrates using radio-frequency magnetron sputtering at various T G up to 350 °C. Both the resistivity of ITO and the interface quality of CdS/CIGS strongly depend on T G . For a T G ≤ 200 °C, a reduction in the series resistance enhanced the solar cell performance, while the p–n interface of the device was found to become deteriorated severely at T G > 200 °C. CIGS solar cells with ITO deposited at T G = 200 °C showed the best performance in terms of efficiency.

Flexible Cu(In,Ga)Se2 thin-film solar cells for space application

International Nuclear Information System (INIS)

Otte, Karsten; Makhova, Liudmila; Braun, Alexander; Konovalov, Igor

2006-01-01

Thin film solar cells (TFSC) with Cu(In,Ga)Se 2 (CIGS) as absorber layer have been produced on rigid glass substrates for the terrestrial market. There exist, however, different investigations for manufacturing of TFSC on flexible substrates in order to achieve very thin and highly flexible (rollable) solar cells. Besides their capability to open new terrestrial market segments, they are considered as competitive candidates for future flexible thin film space power generators compared to traditional crystalline solar cells. This paper explains the advantages of flexible TFSC for usage in space, including:-low mass and storage volume, -high power/mass ratio [>100 W/kg at array level], -high radiation resistance against proton and electron radiation and, -lower production costs. These cells can be produced on flexible conductive and insulating substrate materials and have efficiency potentials of up to 15%. We report on the current development steps to adopt the TFSC technology to space requirements as well as the first European industrial approach to the roll-to-roll production of flexible CIGS-TFSC on polyimide as substrate material. Stability issues in space environment concern not only the TFSC itself, but all system components such as interconnects, cell assembly and flexible blankets. The adhesion of the back-contact to the substrate, the emissivity control in the infrared wavelength range, the electrical contacting and interconnection as well as flexible encapsulation are currently under investigation and are discussed in the paper. The production costs for TFSC for space application can be further reduced by sharing resources for the production of flexible TFSC for the terrestrial market; namely by using both, the existing terrestrial investment in production facilities as well as the synergies in R and D

Device Modeling of the Performance of Cu(In,GaSe2 Solar Cells with V-Shaped Bandgap Profiles

Directory of Open Access Journals (Sweden)

Shou-Yi Kuo

2014-01-01

Full Text Available The effect of Cu(In,GaSe2 (CIGS with V-shaped bandgap on device performance is investigated in detail. A series of Ga/(In+Ga ratio are set to study the influence of V-shaped bandgap profile on the electricity of CIGS thin film solar cells. The modeling of device current density-voltage (J-V curve and bandgap grading profile corresponded well to measurement results. Detailed characteristic and modeling results show that an increased gradient of bandgap from valley to the buffer layer CdS will result in a barrier and lead to an enhanced recombination in the valley. This phenomenon can be modified by the back electric field resulting from a gradient bandgap from valley (bandgap minimum to the Mo back contact. These results indicate CIGS-based solar cells can achieve higher performance by optimizing the V-shaped bandgap profile.

Progress on Low-Temperature Pulsed Electron Deposition of CuInGaSe2 Solar Cells

Directory of Open Access Journals (Sweden)

Massimo Mazzer

2016-03-01

Full Text Available The quest for single-stage deposition of CuInGaSe2 (CIGS is an open race to replace very effective but capital intensive thin film solar cell manufacturing processes like multiple-stage coevaporation or sputtering combined with high pressure selenisation treatments. In this paper the most recent achievements of Low Temperature Pulsed Electron Deposition (LTPED, a novel single stage deposition process by which CIGS can be deposited at 250 °C, are presented and discussed. We show that selenium loss during the film deposition is not a problem with LTPED as good crystalline films are formed very close to the melting temperature of selenium. The mechanism of formation of good ohmic contacts between CIGS and Mo in the absence of any MoSe2 transition layers is also illustrated, followed by a brief summary of the measured characteristics of test solar cells grown by LTPED. The 17% efficiency target achieved by lab-scale CIGS devices without bandgap modulation, antireflection coating or K-doping is considered to be a crucial milestone along the path to the industrial scale-up of LTPED. The paper ends with a brief review of the open scientific and technological issues related to the scale-up and the possible future applications of the new technology.

Photoluminescence of Cu(In,Ga)Se2 in the solar cell preparation process

International Nuclear Information System (INIS)

Sho, Shirakata; Shinji, Yudate; Jyunji, Honda; Naoki, Iwado

2010-01-01

Full text : Sequential step by step photoluminescence (PL) measurements have been carried out on Cu(In,Ga)Se 2 (CIGS) films just after each thin-film processes for the fabrication of the CIGS solar cell. These include, (i) the CIGS film deposition on the Mo-coated soda-lime glass substrate by three-stage method (CIGS/Mo/SLG), (ii) the chemical-bath deposition (CBD) of CdS buffer layer, (iii) deposition of undoped ZnO window layer by RF sputtering, (iv) deposition of Al doped ZnO high-conductive window layer by RF sputtering, (v) Al grid electrode deposition for the CIGS solar cell, and (vi) the mechanical scribing for the electrical isolation of small test cells. Roomtemperature PL measurements have been done with the excitation of a He-Ne laser (632.8 nm, 1 mW) focused on the sample surface to 0.2 mm diameter. PL was dispersed by a polycromator (Horiba: MicroHR) and detected by a cooled InGaAs multichannel detector (1024 pixels). In order to study the uniformity of PL within CIGS films, the two dimensional PL spectrum mapping measurement has been done (0.4-0.6 mm step) using an x-y stage operating in the raster scanning mode. Acquisition time of one PL spectrum was 1 s. Once the fresh CIGS film is exposed to the air, intensity of the near-band-edge PL decreases slowly with time. After few days, PL intensity was one order of magnitude weaker than its initial value. Thus, PL measurement was performed just after the deposition. It was shown that PL spectra of CIGS films taken for each process in the CIGS solar cell preparation. PL of the CIGS film exhibited nearband-edge peak at 1.18 eV. The slight increase of PL intensity was observed after depositions of CdS and ZnO films. After the high conductive ZnO:Al deposition, PL intensity decreases to one third of the initial PL intensity of the fresh CIGS film. No change has been observed with respect to the line shape of PL peaks during the process. In the CIGS solar cell (open circuit condition), PL intensity recovers

Review on Alkali Element Doping in Cu(In,GaSe2 Thin Films and Solar Cells

Directory of Open Access Journals (Sweden)

Yun Sun

2017-08-01

Full Text Available This paper reviews the development history of alkali element doping on Cu(In,GaSe2 (CIGS solar cells and summarizes important achievements that have been made in this field. The influences of incorporation strategies on CIGS absorbers and device performances are also reviewed. By analyzing CIGS surface structure and electronic property variation induced by alkali fluoride (NaF and KF post-deposition treatment (PDT, we discuss and interpret the following issues: ① The delamination of CIGS thin films induced by Na incorporation facilitates CuInSe2 formation and inhibits Ga during low-temperature co-evaporation processes. ② The mechanisms of carrier density increase due to defect passivation by Na at grain boundaries and the surface. ③ A thinner buffer layer improves the short-circuit current without open-circuit voltage loss. This is attributed not only to better buffer layer coverage in the early stage of the chemical bath deposition process, but also to higher donor defect (CdCu+ density, which is transferred from the acceptor defect (VCu− and strengthens the buried homojunction. ④ The KF-PDT-induced lower valence band maximum at the absorber surface reduces the recombination at the absorber/buffer interface, which improves the open-circuit voltage and the fill factor of solar cells.

Impact of the deposition conditions of buffer and windows layers on lowering the metastability effects in Cu(In,Ga)Se2/Zn(S,O)-based solar cell

Science.gov (United States)

Naghavi, Negar; Hildebrandt, Thibaud; Bouttemy, Muriel; Etcheberry, Arnaud; Lincot, Daniel

2016-02-01

The highest and most reproducible (Cu(In,Ga)Se2 (CIGSe) based solar-cell efficiencies are obtained by use of a very thin n-type CdS layer deposited by chemical bath deposition (CBD). However because of both Cadmium's adverse environmental impact and the narrow bandgap of CdS (2.4-2.5 eV) one of the major objectives in the field of CIGSe technology remains the development and implementation in the production line of Cd-free buffer layers. The CBDZn( S,O) remains one the most studied buffer layer for replacing the CdS in Cu(In,Ga)Se2-based solar cells and has already demonstrated its potential to lead to high-efficiency solar cells up to 22.3%. However one of the key issue to implement a CBD-Zn(S,O) process in a CIGSe production line is the cells stability, which depends both on the deposition conditions of CBD-Zn(S,O) and on a good band alignment between CIGSe/Zn(S,O)/windows layers. The most common window layers applied in CIGSe solar cells consist of two layers : a thin (50-100 nm) and highly resistive i-ZnO layer deposited by magnetron sputtering and a transparent conducting 300-500 nm ZnO:Al layer. In the case of CBD-Zn(S,O) buffer layer, the nature and deposition conditions of both Zn(S,O) and the undoped window layer can strongly influence the performance and stability of cells. The present contribution will be specially focused on the effect of condition growth of CBD-Zn(S,O) buffer layers and the impact of the composition and deposition conditions of the undoped window layers such as ZnxMgyO or ZnxSnyO on the stability and performance of these solar cells.

Device and performance parameters of Cu(In,Ga)(Se,S)2-based solar cells with varying i-ZnO layer thickness

International Nuclear Information System (INIS)

Macabebe, E.Q.B.; Sheppard, C.J.; Dyk, E.E. van

2009-01-01

In pursuit of low-cost and highly efficient thin film solar cells, Cu(In,Ga)(Se,S) 2 /CdS/i-ZnO/ZnO:Al (CIGSS) solar cells were fabricated using a two-step process. The thickness of i-ZnO layer was varied from 0 to 454 nm. The current density-voltage (J-V) characteristics of the devices were measured, and the device and performance parameters of the solar cells were obtained from the J-V curves to analyze the effect of varying i-ZnO layer thickness. The device parameters were determined using a parameter extraction method that utilized particle swarm optimization. The method is a curve-fitting routine that employed the two-diode model. The J-V curves of the solar cells were fitted with the model and the parameters were determined. Results show that as the thickness of i-ZnO was increased, the average efficiency and the fill factor (FF) of the solar cells increase. Device parameters reveal that although the series resistance increased with thicker i-ZnO layer, the solar cells absorbed more photons resulting in higher short-circuit current density (J sc ) and, consequently, higher photo-generated current density (J L ). For solar cells with 303-454 nm-thick i-ZnO layer, the best devices achieved efficiency between 15.24% and 15.73% and the fill factor varied between 0.65 and 0.67.

Photovoltaic Performance and Interface Behaviors of Cu(In,Ga)Se2 Solar Cells with a Sputtered-Zn(O,S) Buffer Layer by High-Temperature Annealing.

Science.gov (United States)

Wi, Jae-Hyung; Kim, Tae Gun; Kim, Jeong Won; Lee, Woo-Jung; Cho, Dae-Hyung; Han, Won Seok; Chung, Yong-Duck

2015-08-12

We selected a sputtered-Zn(O,S) film as a buffer material and fabricated a Cu(In,Ga)Se2 (CIGS) solar cell for use in monolithic tandem solar cells. A thermally stable buffer layer was required because it should withstand heat treatment during processing of top cell. Postannealing treatment was performed on a CIGS solar cell in vacuum at temperatures from 300-500 °C to examine its thermal stability. Serious device degradation particularly in VOC was observed, which was due to the diffusion of thermally activated constituent elements. The elements In and Ga tend to out-diffuse to the top surface of the CIGS, while Zn diffuses into the interface of Zn(O,S)/CIGS. Such rearrangement of atomic fractions modifies the local energy band gap and band alignment at the interface. The notch-shape induced at the interface after postannealing could function as an electrical trap during electron transport, which would result in the reduction of solar cell efficiency.

DEGRADATION OF SOLAR CELLS PARAMETERS FABRICATED ON THE BASIS OF Cu(In,GaSe2 SEMICONDUCTOR SOLID SOLUTIONS UNDER ELECTRON IRRADIATION

Directory of Open Access Journals (Sweden)

A. V. Mudryi

2014-01-01

Full Text Available Polycrystalline Cu(In,GaSe2 (CIGS thin films were grown on molybdenum-coated soda-lime glass substrates by co-evaporation of the elements Cu, In, Ga and Se from independent sources. The effect of electron irradiation on the electrical and optical properties of CIGS thin films and solar cells with the structure ZnO:Al/i-ZnO/CdS/CIGS/Mo/glass was studied. It was found that the degradation of the electrical parameters of solar cells (open-circuit voltage, short-circuit current density and efficiency took place due to the formation of radiation defects (recombination centers with deep energy levels in the bandgap of CIGS. It was revealed that after electron irradiation intensity of near band-edge luminescence band at about 1,1 eV decreased considerably and bands of luminescence with maxima at 0,93 and 0,75 eV appeared.

Relationship between open-circuit voltage in Cu(In,Ga)Se2 solar cell and peak position of (220/204) preferred orientation near its absorber surface

International Nuclear Information System (INIS)

Chantana, J.; Minemoto, T.; Watanabe, T.; Teraji, S.; Kawamura, K.

2013-01-01

Cu(In,Ga)Se 2 (CIGS) absorbers with various Ga/III, Ga/(In+Ga), profiles are prepared by the so-called “multi-layer precursor method” using multi-layer co-evaporation of material sources. It is revealed that open-circuit voltage (V OC ) of CIGS solar cell is primarily dependent on averaged Ga/III near the surface of its absorber. This averaged Ga/III is well predicted by peak position of (220/204) preferred orientation of CIGS film near its surface investigated by glancing-incidence X-ray diffraction with 0.1° incident angle. Finally, the peak position of (220/204) preferred orientation is proposed as a measure of V OC before solar cell fabrication

Stability of Cu(In,Ga)Se2 solar cells: A literature review

NARCIS (Netherlands)

Theelen, M.; Daume, F.

2016-01-01

As Cu(In,Ga)Se2 (CIGS) photovoltaic (PV) technology matures to production on an industrial scale, its long-term stability becomes increasingly important: The electric yield and thus the revenue of a PV system depend on both the initial conversion efficiency as well as its development over time.

Red-blue effect in Cu(In,Ga)Se2-based devices revisited

International Nuclear Information System (INIS)

Igalson, M.; Urbaniak, A.; Zabierowski, P.; Maksoud, H. Abdel; Buffiere, M.; Barreau, N.; Spiering, S.

2013-01-01

The controversial issue of a source for the fill factor losses in Cu(In,Ga)Se 2 -based solar cells observed under red light is discussed. Experimental evidence is presented that removal of the fill factor loss by blue light is accompanied by a decrease in capacitance. Similar kinetics for both effects are observed. This effect is demonstrated not only on CdS-buffered devices but also on Zn(O,S)- and In 2 S 3 -buffered cells. The explanation, supported by simulations, is based on a model of a reduction of the p + layer by holes photogenerated in the buffer. This effect might be differentiated from the effect of a photosensitive secondary barrier in the buffer-window part of the junction by a sign of the capacitance change under blue light. - Highlights: ► High-energy photons improve fill factor in Cu(In,Ga)Se 2 -based solar cells. ► The effect is demonstrated on three types of buffer layers. ► Fill factor improvement under blue light is correlated with a decrease of doping. ► p + layer is the main cause of fill factor deficiency under red light

Inkjet printed Cu(In,Ga)S2 nanoparticles for low-cost solar cells

KAUST Repository

Barbe, Jeremy; Eid, Jessica; Ahlswede, Erik; Spiering, Stefanie; Powalla, Michael; Agrawal, Rakesh; Del Gobbo, Silvano

2016-01-01

Cu(In,Ga)Se2 (CIGSe) thin film solar cells were fabricated by direct inkjet printing of Cu(In,Ga)S2 (CIGS) nanoparticles followed by rapid thermal annealing under selenium vapor. Inkjet printing is a low-cost, low-waste, and flexible patterning

Degradation of Cu(In, Ga)Se{sub 2} thin-film solar cells due to the ionization effect of low-energy electrons

Energy Technology Data Exchange (ETDEWEB)

Kawakita, Shirou, E-mail: kawakita.shirou@jaxa.jp [Japan Aerospace Exploration Agency (JAXA), Tsukuba, Ibaraki 305-8505 (Japan); Imaizumi, Mitsuru [Japan Aerospace Exploration Agency (JAXA), Tsukuba, Ibaraki 305-8505 (Japan); Ishizuka, Shogo; Shibata, Hajime; Niki, Shigeru [National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568 (Japan); Okuda, Shuichi [Osaka Prefecture University (OPU), Sakai, Osaka 599-8570 (Japan); Kusawake, Hiroaki [Japan Aerospace Exploration Agency (JAXA), Tsukuba, Ibaraki 305-8505 (Japan)

2015-05-01

Cu (In, Ga)Se{sub 2} (CIGS) solar cells were irradiated with 100 keV electrons to reveal the characteristics of created radiation defects. 100 keV electrons cannot produce any displacement defects in CIGS. Low-fluence electrons improve the electrical performance of the CIGS solar cells due to the change in the conductive type of donor to acceptor in a metastable defect, which is equivalent to the light-soaking effect. However, high fluence electrons cause the cell performance to decline. From analysis based on changes in carrier density and electroluminescence, defects causing the decline in performance include donor- and non-radiative types. In addition, red-on-bias experiments showed an increase in III{sub Cu} defects due to electron irradiation. Based on these results, the degradation in the electrical performance of the CIGS solar cells irradiated with high electron fluence would be attributable to a change in the conductive type of III{sub Cu} defects. - Highlights: • Cu(In,Ga)Se2 Solar cells were irradiated with 100 and 250 keV electrons at low temperature. • These electrons degraded the electrical performance of Cu(In,Ga)Se2 sola cells. • The electrons induced ⅢCu defects in Cu(In,Ga)Se2.

Effect of thermal annealing on the redistribution of alkali metals in Cu(In,Ga)Se2 solar cells on glass substrate

Science.gov (United States)

Kamikawa, Yukiko; Nishinaga, Jiro; Ishizuka, Shogo; Tayagaki, Takeshi; Guthrey, Harvey; Shibata, Hajime; Matsubara, Koji; Niki, Shigeru

2018-03-01

The precise control of alkali-metal concentrations in Cu(In,Ga)Se2 (CIGS) solar cells via post deposition treatment (PDT) has recently attracted attention. When PDT is performed at an elevated temperature, an accompanying annealing effect is expected. Here, we investigate how thermal annealing affects the redistribution of alkali metals in CIGS solar cells on glass substrates and the properties of the solar cells. In addition, we investigate the origin of non-homogeneous alkali-metal depth profiles that are typical of CIGS grown using a three-stage process. In particular, we use secondary-ion mass spectrometry measurements of the ion concentration as a function of distance from the CIGS surface to investigate the impact of thermal annealing on the distribution of alkali metals (Na, Ka, and Rb) and constituent elements (Ga and In) in the CIGS absorbers. We find that the depth profiles of the alkali metals strongly reflect the density of sites that tend to accommodate alkali metals, i.e., vacancies. Annealing at elevated temperature caused a redistribution of the alkali metals. The thermal-diffusion kinetics of alkali metals depends strongly on the species involved. We introduced low flux potassium fluoride (KF) to study a side effect of KF-PDT, i.e., Na removal from CIGS, separately from its predominant effects such as surface modification. When sufficient amounts of Na are supplied from the soda lime glass via annealing at an elevated temperature, the negative effect was not apparent. Conversely, when the Na supply was not sufficient, it caused a deterioration of the photovoltaic properties.

Effect of Thermal Annealing on the Redistribution of Alkali Metals in Cu(In,Ga)Se2 Solar Cells on Glass Substrate

Energy Technology Data Exchange (ETDEWEB)

Guthrey, Harvey L [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Kamikawa, Yukiko [National Institute of Advanced Industrial Science and Technology (AIST); Nishinaga, Jiro [National Institute of Advanced Industrial Science and Technology (AIST); Ishizuka, Shogo [National Institute of Advanced Industrial Science and Technology (AIST); Tayagaki, Takeshi [National Institute of Advanced Industrial Science and Technology (AIST); Shibata, Hajime [National Institute of Advanced Industrial Science and Technology (AIST); Matsubara, Koji [National Institute of Advanced Industrial Science and Technology (AIST); Niki, Shigeru [National Institute of Advanced Industrial Science and Technology (AIST)

2018-03-02

The precise control of alkali-metal concentrations in Cu(In,Ga)Se2 (CIGS) solar cells via post deposition treatment (PDT) has recently attracted attention. When PDT is performed at an elevated temperature, an accompanying annealing effect is expected. Here, we investigate how thermal annealing affects the redistribution of alkali metals in CIGS solar cells on glass substrates and the properties of the solar cells. In addition, we investigate the origin of non-homogeneous alkali-metal depth profiles that are typical of CIGS grown using a three-stage process. In particular, we use secondary-ion mass spectrometry measurements of the ion concentration as a function of distance from the CIGS surface to investigate the impact of thermal annealing on the distribution of alkali metals (Na, Ka, and Rb) and constituent elements (Ga and In) in the CIGS absorbers. We find that the depth profiles of the alkali metals strongly reflect the density of sites that tend to accommodate alkali metals, i.e., vacancies. Annealing at elevated temperature caused a redistribution of the alkali metals. The thermal-diffusion kinetics of alkali metals depends strongly on the species involved. We introduced low flux potassium fluoride (KF) to study a side effect of KF-PDT, i.e., Na removal from CIGS, separately from its predominant effects such as surface modification. When sufficient amounts of Na are supplied from the soda lime glass via annealing at an elevated temperature, the negative effect was not apparent. Conversely, when the Na supply was not sufficient, it caused a deterioration of the photovoltaic properties.

Structure and properties of defects in photovoltaics absorber material: Atomic scale computer simulations of Si and Cu(In,Ga)Se2

OpenAIRE

Pohl, Johan

2013-01-01

Solar cell technology is becoming a viable alternative to fossil fuels. The main challenge remains to deliver electricity at grid parity. To achieve this goal increasing the efficiency of solar cells remains the top priority. Most of the solar cells on the market are still based on silicon wafers. Cu(In,Ga)Se2 thin-film technology, however, is becoming one of the main competitors with substantial advantage through reduced material and energy consumption in the production process. Knowledge-ba...

Improved open-circuit voltage in Cu(In,Ga)Se2 solar cells with high work function transparent electrodes

International Nuclear Information System (INIS)

Jäger, Timo; Romanyuk, Yaroslav E.; Bissig, Benjamin; Pianezzi, Fabian; Nishiwaki, Shiro; Reinhard, Patrick; Steinhauser, Jérôme; Tiwari, Ayodhya N.; Schwenk, Johannes

2015-01-01

Hydrogenated indium oxide (IOH) is implemented as transparent front contact in Cu(In,Ga)Se 2 (CIGS) solar cells, leading to an open circuit voltage V OC enhanced by ∼20 mV as compared to reference devices with ZnO:Al (AZO) electrodes. This effect is reproducible in a wide range of contact sheet resistances corresponding to various IOH thicknesses. We present the detailed electrical characterization of glass/Mo/CIGS/CdS/intrinsic ZnO (i-ZnO)/transparent conductive oxide (TCO) with different IOH/AZO ratios in the front TCO contact in order to identify possible reasons for the enhanced V OC . Temperature and illumination intensity-dependent current-voltage measurements indicate that the dominant recombination path does not change when AZO is replaced by IOH, and it is mainly limited to recombination in the space charge region and at the junction interface of the solar cell. The main finding is that the introduction of even a 5 nm-thin IOH layer at the i-ZnO/TCO interface already results in a step-like increase in V OC . Two possible explanations are proposed and verified by one-dimensional simulations using the SCAPS software. First, a higher work function of IOH as compared to AZO is simulated to yield an V OC increase by 21 mV. Second, a lower defect density in the i-ZnO layer as a result of the reduced sputter damage during milder sputter-deposition of IOH can also add to a maximum enhanced V OC of 25 mV. Our results demonstrate that the proper choice of the front TCO contact can reduce the parasitic recombination and boost the efficiency of CIGS cells with improved corrosion stability

Reduced recombination in a surface-sulfurized Cu(InGa)Se2 thin-film solar cell

Science.gov (United States)

Kim, Shinho; Nishinaga, Jiro; Kamikawa, Yukiko; Ishizuka, Shogo; Nagai, Takehiko; Koida, Takashi; Tampo, Hitoshi; Shibata, Hajime; Matsubara, Koji; Niki, Shigeru

2018-05-01

This study demonstrates surface sulfurization effects on Cu(InGa)Se2 (CIGSe) thin-film solar cells with a single back-graded band gap. Single back-graded CIGSe thin films were prepared via a three-stage process in a high-vacuum molecular beam epitaxial growth chamber and were subsequently annealed in a tube furnace under environmental conditions with H2S gas. After sulfurization, an ∼80- to ∼100-nm-thick CuIn(SSe)2 layer with significantly small Ga contents (CISSe:Ga) was formed on the CIGSe layer. The newly formed CISSe:Ga layer exhibited graded S contents from surface to bulk, thus resulting in a front-graded band gap. In addition, CISSe:Ga was covered with S-enriched CISSe region that was extended from the surface to a depth of a few nm and was depleted of Ga. A device with the sulfurized CIGSe showed reduced recombination at the buffer–absorber interface, in space-charge region and in bulk. Consequently, the open circuit voltage increased from 0.58 V (in the non-sulfurized case) to 0.66 V, and the conversion efficiency improved from 15.5 to 19.4%. This large improvement is caused by the front graded band gap at the surface and the hole-blocking barrier, which suppress recombination at the CdS/CISSe:Ga interface. In addition, sulfurization followed by KF post-deposition treatment (PDT) increased the efficiency to 20.1%. Compared to the untreated sulfurized device, the KF-PDT device delivered an increased carrier lifetime and reduced the recombination in bulk probably because the defects were passivated by the K, which penetrated into the bulk region.

Accessing the band alignment in high efficiency Cu(In,Ga)(Se,S)2 (CIGSSe) solar cells with an InxSy:Na buffer based on temperature dependent measurements and simulations

Science.gov (United States)

Schoneberg, Johannes; Ohland, Jörg; Eraerds, Patrick; Dalibor, Thomas; Parisi, Jürgen; Richter, Michael

2018-04-01

We present a one-dimensional simulation model for high efficiency Cu(In,Ga)(Se,S)2 solar cells with a novel band alignment at the hetero-junction. The simulation study is based on new findings about the doping concentration of the InxSy:Na buffer and i-ZnO layers as well as comprehensive solar cell characterization by means of capacitance, current voltage, and external quantum efficiency measurements. The simulation results show good agreement with the experimental data over a broad temperature range, suggesting the simulation model with an interface-near region (INR) of approximately 100 nm around the buffer/absorber interface that is of great importance for the solar cell performance. The INR exhibits an inhomogeneous doping and defect density profile as well as interface traps at the i-layer/buffer and buffer/absorber interfaces. These crucial parameters could be accessed via their opposing behavior on the simulative reconstruction of different measurement characteristics. In this work, we emphasize the necessity to reconstruct the results of a set of experimental methods by means of simulation to find the most appropriate model for the solar cell. Lowly doped buffer and intrinsic window layers in combination with a high space charge at the front of the absorber lead to a novel band alignment in the simulated band structure of the solar cell. The presented insights may guide the strategy of further solar cell optimization including (alkali-) post deposition treatments.

Rubidium distribution at atomic scale in high efficient Cu(In,Ga)Se2 thin-film solar cells

Science.gov (United States)

Vilalta-Clemente, Arantxa; Raghuwanshi, Mohit; Duguay, Sébastien; Castro, Celia; Cadel, Emmanuel; Pareige, Philippe; Jackson, Philip; Wuerz, Roland; Hariskos, Dimitrios; Witte, Wolfram

2018-03-01

The introduction of a rubidium fluoride post deposition treatment (RbF-PDT) for Cu(In,Ga)Se2 (CIGS) absorber layers has led to a record efficiency up to 22.6% for thin-film solar cell technology. In the present work, high efficiency CIGS samples with RbF-PDT have been investigated by atom probe tomography (APT) to reveal the atomic distribution of all alkali elements present in CIGS layers and compared with non-treated samples. A Scanning Electron Microscopy Dual beam station (Focused Ion Beam-Gas Injection System) as well as Transmission Kikuchi diffraction is used for atom probe sample preparation and localization of the grain boundaries (GBs) in the area of interest. The analysis of the 3D atomic scale APT reconstructions of CIGS samples with RbF-PDT shows that inside grains, Rb is under the detection limit, but the Na concentration is enhanced as compared to the reference sample without Rb. At the GBs, a high concentration of Rb reaching 1.5 at. % was found, and Na and K (diffusing from the glass substrate) are also segregated at GBs but at lower concentrations as compared to Rb. The intentional introduction of Rb leads to significant changes in the chemical composition of CIGS matrix and at GBs, which might contribute to improve device efficiency.

Loss mechanisms in hydrazine-processed Cu2ZnSn(Se,S)4 solar cells

Science.gov (United States)

Gunawan, Oki; Todorov, Teodor K.; Mitzi, David B.

2010-12-01

We present a device characterization study for hydrazine-processed kesterite Cu2ZnSn(Se,S)4 (CZTSSe) solar cells with a focus on pinpointing the main loss mechanisms limiting device efficiency. Temperature-dependent study and time-resolved photoluminescence spectroscopy on these cells, in comparison to analogous studies on a reference Cu(In,Ga)(Se,S)2 (CIGS) cell, reveal strong recombination loss at the CZTSSe/CdS interface, very low minority-carrier lifetimes, and high series resistance that diverges at low temperature. These findings help identify the key areas for improvement of these CZTSSe cells in the quest for a high-performance indium- and tellurium-free solar cell.

Electronic defect study on low temperature processed Cu(In,Ga)Se2 thin-film solar cells and the influence of an Sb layer

International Nuclear Information System (INIS)

Van Puyvelde, L; Lauwaert, J; Devulder, W; Detavernier, C; Vrielinck, H; Tempez, A; Nishiwaki, S; Pianezzi, F; Tiwari, A N

2015-01-01

A way to lower the manufacturing cost of Cu(In,Ga)Se 2 (CIGS) thin-film solar cells is to use flexible polymer substrates instead of rigid glass. Because such substrates require lower temperature during absorber deposition, the grain growth of the absorber layer can be hindered which leads to a lower cell performance. Partial compensation of this efficiency loss might be accomplished by growing the absorber in the presence of Sb, which is reported to promote grain growth. In this work CIGS solar cells, deposited on glass substrates, at a reduced substrate temperature with a thin Sb layer (7, 12 nm) on top of the Mo contact are investigated. The diffusion profile of Sb is measured with plasma profiling time of flight mass spectrometry. The beneficial effect of Sb on efficiency and grain size is shown in quantum efficiency measurements and with scanning electron microscopy, respectively. Electric spectroscopy is used to explore the possible effects on the defect structure, more in particular on the dominant shallow acceptor. Admittance spectra exhibit a capacitance step to the geometric capacitance plateau at low temperature (5–60 K). Analyzing this capacitance step, we obtained a good estimate of the activation energy of the intrinsic defects that provide the p-type conductivity of the CIGS absorber. The measurements did not show a change in the nature of the dominant acceptor upon Sb treatment. (paper)

Electronic grain boundary properties in polycrystalline Cu(In,Ga)Se2 semiconductors for thin film solar cells

International Nuclear Information System (INIS)

Baier, Robert

2012-01-01

Solar cells based on polycrystalline Cu(In,Ga)Se 2 (CIGSe) thin film absorbers reach the highest energy conversion efficiency among all thin film solar cells. The record efficiency is at least partly attributed to benign electronic properties of grain boundaries (GBs) in the CIGSe layers. However, despite a high amount of research on this phenomenon the underlying physics is not sufficiently understood. This thesis presents an elaborate study on the electronic properties of GBs in CIGSe thin films. Kelvin probe force microscopy (KPFM) was employed to investigate the electronic properties of GBs in dependence of the Ga-content. Five CIGSe thin lms with various Ga-contents were grown by means of similar three stage co-evaporation processes. Both as grown as well as chemically treated (KCN etched) thin films were analyzed. The chemical treatment was employed to remove surface oxides. No difference in electronic GB properties was found with or without the chemical treatment. Therefore, we conclude that a moderate surface oxidation does not alter the electronic properties of GBs. In general, one can observe significant variations of electronic potential barriers at GBs. Under consideration of the averaging effect of the work function signal of nanoscale potential distributions in KPFM measurements which was quantified in the course of this thesis both positive and negative potential barriers in a range between ∼-350 mV and ∼+450 mV were detected. Additionally, variations in the defect densities at GBs between ∼3.1 x 10 11 cm -2 and ∼2.1 x 10 12 cm -2 were found. However, no correlation between the electronic properties of GBs and the Ga-content of CIGSe thin films was discovered. Consequently, one cannot explain the drop in device efficiency observed for CIGSe thin film solar cells with a high Ga-content by a change of the electronic properties of GBs. Combined KPFM and electron backscatter diffraction measurements were employed for the first time on CIGSe thin

A comparative study on charge carrier recombination across the junction region of Cu2ZnSn(S,Se4 and Cu(In,GaSe2 thin film solar cells

Directory of Open Access Journals (Sweden)

Mohammad Abdul Halim

2016-03-01

Full Text Available A comparative study with focusing on carrier recombination properties in Cu2ZnSn(S,Se4 (CZTSSe and the CuInGaSe2 (CIGS solar cells has been carried out. For this purpose, electroluminescence (EL and also bias-dependent time resolved photoluminescence (TRPL using femtosecond (fs laser source were performed. For the similar forward current density, the EL-intensity of the CZTSSe sample was obtained significantly lower than that of the CIGS sample. Primarily, it can be attributed to the existence of excess amount of non-radiative recombination center in the CZTSSe, and/or CZTSSe/CdS interface comparing to that of CIGS sample. In case of CIGS sample, TRPL decay time was found to increase with the application of forward-bias. This can be attributed to the reduced charge separation rate resulting from the reduced electric-field at the junction. However, in CZTSSe sample, TRPL decay time has been found almost independent under the forward and reverse-bias conditions. This phenomenon indicates that the charge recombination rate strongly dominates over the charge separation rate across the junction of the CZTSSe sample. Finally, temperature dependent VOC suggests that interface related recombination in the CZTSSe solar cell structure might be one of the major factors that affect EL-intensity and also, TRPL decay curves.

How the Starting Precursor Influences the Properties of Polycrystalline CuInGaSe2 Thin Films Prepared by Sputtering and Selenization

Directory of Open Access Journals (Sweden)

Greta Rosa

2016-05-01

Full Text Available Cu(In,GaSe2 (CIGS/CdS thin-film solar cells have reached, at laboratory scale, an efficiency higher than 22.3%, which is one of the highest efficiencies ever obtained for thin-film solar cells. The research focus has now shifted onto fabrication processes, which have to be easily scalable at an industrial level. For this reason, a process is highlighted here which uses only the sputtering technique for both the absorber preparation and the deposition of all the other materials that make up the cell. Particular emphasis is placed on the comparison between different precursors obtained with either In2Se3 and Ga2Se3 or InSe and GaSe as starting materials. In both cases, the precursor does not require any heat treatment, and it is immediately ready to be selenized. The selenization is performed in a pure-selenium atmosphere and only lasts a few minutes at a temperature of about 803 K. Energy conversion efficiencies in the range of 15%–16% are reproducibly obtained on soda-lime glass (SLG substrates. Similar results are achieved if commercial ceramic tiles are used as a substrate instead of glass. This result is especially useful for the so-called building integrated photovoltaic. Cu(In,GaSe2-based solar cells grown directly on ceramic tiles are ideal for the fabrication of ventilated façades in low impact buildings.

Compositionally Graded Absorber for Efficient and Stable Near-Infrared-Transparent Perovskite Solar Cells.

Science.gov (United States)

Fu, Fan; Pisoni, Stefano; Weiss, Thomas P; Feurer, Thomas; Wäckerlin, Aneliia; Fuchs, Peter; Nishiwaki, Shiro; Zortea, Lukas; Tiwari, Ayodhya N; Buecheler, Stephan

2018-03-01

Compositional grading has been widely exploited in highly efficient Cu(In,Ga)Se 2 , CdTe, GaAs, quantum dot solar cells, and this strategy has the potential to improve the performance of emerging perovskite solar cells. However, realizing and maintaining compositionally graded perovskite absorber from solution processing is challenging. Moreover, the operational stability of graded perovskite solar cells under long-term heat/light soaking has not been demonstrated. In this study, a facile partial ion-exchange approach is reported to achieve compositionally graded perovskite absorber layers. Incorporating compositional grading improves charge collection and suppresses interface recombination, enabling to fabricate near-infrared-transparent perovskite solar cells with power conversion efficiency of 16.8% in substrate configuration, and demonstrate 22.7% tandem efficiency with 3.3% absolute gain when mechanically stacked on a Cu(In,Ga)Se 2 bottom cell. Non-encapsulated graded perovskite device retains over 93% of its initial efficiency after 1000 h operation at maximum power point at 60 °C under equivalent 1 sun illumination. The results open an avenue in exploring partial ion-exchange to design graded perovskite solar cells with improved efficiency and stability.

Compositionally Graded Absorber for Efficient and Stable Near‐Infrared‐Transparent Perovskite Solar Cells

Science.gov (United States)

Pisoni, Stefano; Weiss, Thomas P.; Feurer, Thomas; Wäckerlin, Aneliia; Fuchs, Peter; Nishiwaki, Shiro; Zortea, Lukas; Tiwari, Ayodhya N.

2018-01-01

Abstract Compositional grading has been widely exploited in highly efficient Cu(In,Ga)Se2, CdTe, GaAs, quantum dot solar cells, and this strategy has the potential to improve the performance of emerging perovskite solar cells. However, realizing and maintaining compositionally graded perovskite absorber from solution processing is challenging. Moreover, the operational stability of graded perovskite solar cells under long‐term heat/light soaking has not been demonstrated. In this study, a facile partial ion‐exchange approach is reported to achieve compositionally graded perovskite absorber layers. Incorporating compositional grading improves charge collection and suppresses interface recombination, enabling to fabricate near‐infrared‐transparent perovskite solar cells with power conversion efficiency of 16.8% in substrate configuration, and demonstrate 22.7% tandem efficiency with 3.3% absolute gain when mechanically stacked on a Cu(In,Ga)Se2 bottom cell. Non‐encapsulated graded perovskite device retains over 93% of its initial efficiency after 1000 h operation at maximum power point at 60 °C under equivalent 1 sun illumination. The results open an avenue in exploring partial ion‐exchange to design graded perovskite solar cells with improved efficiency and stability. PMID:29593970

Thin film solar cells: research in an industrial perspective.

Science.gov (United States)

Edoff, Marika

2012-01-01

Electricity generation by photovoltaic conversion of sunlight is a technology in strong growth. The thin film technology is taking market share from the dominant silicon wafer technology. In this article, the market for photovoltaics is reviewed, the concept of photovoltaic solar energy conversion is discussed and more details are given about the present technological limitations of thin film solar cell technology. Special emphasis is given for solar cells which employ Cu(In,Ga)Se(2) and Cu(2)ZnSn(S,Se)(4) as the sunlight-absorbing layer.

Properties of dislocations in Cu(In,Ga)Se2 film and their formation during growth

Energy Technology Data Exchange (ETDEWEB)

Dietrich, Jens; Boit, Christian [Technische Universitaet Berlin, Department of Semiconductor Devices, Einsteinufer 19, 10587 Berlin (Germany); Abou-Ras, Daniel; Rissom, Thorsten; Unold, Thomas; Schock, Hans-Werner [Helmholtz Zentrum Berlin fuer Materialien und Energie, Hahn-Meitner-Platz 1, 14109 Berlin (Germany); Niermann, Tore; Lehmann, Michael [Technische Universitaet Berlin, Institute of Optics and Atomic Physics, Hardenbergstrasse 36, 10623 Berlin (Germany)

2012-07-01

Transmission electron microscopy (TEM) studies were performed on Cu(In,Ga)Se2 (CIGSe) thin films for solar cells with a special focus on dislocations. A sample series of glass/Mo/CIGSe stacks with varying [Cu]/([Ga]+[In]) ratio were prepared by interrupting the growth processes at several stages. TEM imaging and elemental distribution maps by energy-dispersive X-ray spectroscopy gave structural and compositional information at certain film growth states. Furthermore, high resolution TEM imaging was used to confirm a structural model of dislocations in complete CIGSe solar cells and by means of in-line electron holography we examined changes in the mean inner potential. A decrease of the mean inner potential at the position of the dislocations was observed. This might be attributed to a change of the atomic density due to the dislocation, a local segregation or a charge at the dislocation core.

Copper zinc tin sulfide-based thin film solar cells

CERN Document Server

Ito, Kentaro

2014-01-01

Beginning with an overview and historical background of Copper Zinc Tin Sulphide (CZTS) technology, subsequent chapters cover properties of CZTS thin films, different preparation methods of CZTS thin films, a comparative study of CZTS and CIGS solar cell, computational approach, and future applications of CZTS thin film solar modules to both ground-mount and rooftop installation. The semiconducting compound (CZTS) is made up earth-abundant, low-cost and non-toxic elements, which make it an ideal candidate to replace Cu(In,Ga)Se2 (CIGS) and CdTe solar cells which face material scarcity and tox

Electrochemical etching of molybdenum for shunt removal in thin film solar cells

NARCIS (Netherlands)

Hovestad, A.; Bressers, P.M.M.C.; Meertens, R.M.; Frijters, C.H.; Voorthuijzen, W.P.

2015-01-01

High yield and reproducible production is a major challenge in up-scaling thin film Cu(In,Ga)Se2(CIGS) solar cells to large area roll-to-roll industrial manufacturing. Pinholes enabling Ohmic contact between the ZnO:Al front-contact and Mo back contact of the CIGS cell create electrical shunts that

Numerical modelling of CIGS/CdS solar cell

Science.gov (United States)

Devi, Nisha; Aziz, Anver; Datta, Shouvik

2018-05-01

In this work, we design and analyze the Cu(In,Ga)Se2 (CIGS) solar cell using simulation software "Solar Cell Capacitance Simulator in One Dimension (SCAPS-1D)". The conventional CIGS solar cell uses various layers, like intrinsic ZnO/Aluminium doped ZnO as transparent oxide, antireflection layer MgF2, and electron back reflection (EBR) layer at CIGS/Mo interface for good power conversion efficiency. We replace this conventional model by a simple model which is easy to fabricate and also reduces the cost of this cell because of use of lesser materials. The new designed model of CIGS solar cell is ITO/CIGS/OVC/CdS/Metal contact, where OVC is ordered vacancy compound. From this simple structure, even at very low illumination we are getting good results. We simulate this CIGS solar cell model by varying various physical parameters of CIGS like thickness, carrier density, band gap and temperature.

Investigation of Non-Vacuum Deposition Techniques in Fabrication of Chalcogenide-Based Solar Cell Absorbers

KAUST Repository

Alsaggaf, Ahmed

2015-07-01

The environmental challenges are increasing, and so is the need for renewable energy. For photovoltaic applications, thin film Cu(In,Ga)(S,Se)2 (CIGS) and CuIn(S,Se)2 (CIS) solar cells are attractive with conversion efficiencies of more than 20%. However, the high-efficiency cells are fabricated using vacuum technologies such as sputtering or thermal co-evaporation, which are very costly and unfeasible at industrial level. The fabrication involves the uses of highly toxic gases such as H2Se, adding complexity to the fabrication process. The work described here focused on non-vacuum deposition methods such as printing. Special attention has been given to printing designed in a moving Roll-to-Roll (R2R) fashion. The results show potential of such technology to replace the vacuum processes. Conversion efficiencies for such non-vacuum deposition of Cu(In,Ga)(S,Se)2 solar cells have exceeded 15% using hazardous chemicals such as hydrazine, which is unsuitable for industrial scale up. In an effort to simplify the process, non-toxic suspensions of Cu(In,Ga)S2 molecular-based precursors achieved efficiencies of ~7-15%. Attempts to further simplify the selenization step, deposition of CuIn(S,Se)2 particulate solutions without the Ga doping and non-toxic suspensions of Cu(In,Ga)Se2 quaternary precursors achieved efficiencies (~1-8%). The contribution of this research was to provide a new method to monitor printed structures through spectral-domain optical coherence tomography SD-OCT in a moving fashion simulating R2R process design at speeds up to 1.05 m/min. The research clarified morphological and compositional impacts of Nd:YAG laser heat-treatment on Cu(In,Ga)Se2 absorber layer to simplify the annealing step in non-vacuum environment compatible to R2R. Finally, the research further simplified development methods for CIGS solar cells based on suspensions of quaternary Cu(In,Ga)Se2 precursors and ternary CuInS2 precursors. The methods consisted of post deposition reactive

Bismuth-doped Cu(In,Ga)Se2 absorber prepared by multi-layer precursor method and its solar cell

International Nuclear Information System (INIS)

Chantana, Jakapan; Hironiwa, Daisuke; Minemoto, Takashi; Watanabe, Taichi; Teraji, Seiki; Kawamura, Kazunori

2015-01-01

Bismuth (Bi)-doped Cu(In,Ga)Se 2 (CIGS) films were prepared by the so-called ''multi-layer precursor method'', obtained by depositing them onto Bi layers with various thicknesses on Mo-coated soda-lime glass (SLG) substrates. Material composition (Cu, In, Ga, and Se) profiles of the CIGS films are almost identical, whereas sodium (Na) is reduced, when Bi thickness is increased. Moreover, the incorporation of Bi into the CIGS film is enhanced with thicker Bi layer. With Bi thickness from 0 to 70 nm, the 2.4-μm-thick CIGS absorbers demonstrate the increase in CIGS grain size, carrier lifetime, and carrier concentration, thus improving their cell performances, especially open-circuit voltage (V OC ). With further increase in Bi thickness of above 70 nm, the CIGS films show the deterioration of CIGS film quality owing to the formation of Bi compounds such as Bi, BiSe, and Bi 4 Se 3 . Consequently, Bi-doped CIGS absorber with thickness of 2.4 μm, prepared with the 70-nm-thick Bi layer on Mo-coated SLG substrate, gives rise to the improvement of photovoltaic performances, especially V OC . (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Multilayer Transparent Top Electrode for Solution Processed Perovskite/Cu(In,Ga)(Se,S)2 Four Terminal Tandem Solar Cells.

Science.gov (United States)

Yang, Yang Michael; Chen, Qi; Hsieh, Yao-Tsung; Song, Tze-Bin; Marco, Nicholas De; Zhou, Huanping; Yang, Yang

2015-07-28

Halide perovskites (PVSK) have attracted much attention in recent years due to their high potential as a next generation solar cell material. To further improve perovskites progress toward a state-of-the-art technology, it is desirable to create a tandem structure in which perovskite may be stacked with a current prevailing solar cell such as silicon (Si) or Cu(In,Ga)(Se,S)2 (CIGS). The transparent top electrode is one of the key components as well as challenges to realize such tandem structure. Herein, we develop a multilayer transparent top electrode for perovskite photovoltaic devices delivering an 11.5% efficiency in top illumination mode. The transparent electrode is based on a dielectric/metal/dielectric structure, featuring an ultrathin gold seeded silver layer. A four terminal tandem solar cell employing solution processed CIGS and perovskite cells is also demonstrated with over 15% efficiency.

Growth of amorphous Zn–Sn–O thin films by RF sputtering for buffer layers of CuInSe2 and SnS solar cells

International Nuclear Information System (INIS)

Chang, Shao-Wei; Ishikawa, Kaoru; Sugiyama, Mutsumi

2015-01-01

We propose using amorphous Zn–Sn–O (α-ZTO) deposited by RF sputtering as an alternative n-type buffer layer for Cu(In,Ga)Se 2 and SnS solar cells. The order of the carrier density, n, is increased from the order of 10 15 to 10 17 cm −1 as the Sn/(Sn + Zn) atomic ratio increases from 0.29 to 0.40. On the other hand, the order of n decreased from 10 17 to 10 11 cm −1 as the oxygen partial pressure increased from 0 to 10%. Further, for the α-ZTO film with the Sn/(Sn + Zn) atomic ratio at 0.38 and the oxygen partial pressure at 0%, valence band discontinuities of α-ZTO/CuInSe 2 and α-ZTO/SnS were determined using photoelectron yield spectroscopy measurements. The band discontinuities of each of these interfaces form a spike structure in the conduction band offset, which enables a high-performance solar cell to be obtained. - Highlights: • We propose using amorphous Zn–Sn–O as a n-type layer for Cu(In,Ga)Se 2 and SnS solar cells. • The carrier density was controlled by total and/or oxygen partial pressure during sputtering. • Valence band discontinuities of Zn–Sn–O/CuInSe 2 and Zn–Sn–O/SnS were determined. • The conduction band discontinuities of each of these interfaces form a spike structure

Inkjet printed Cu(In,Ga)S2 nanoparticles for low-cost solar cells

KAUST Repository

Barbe, Jeremy

2016-12-13

Cu(In,Ga)Se2 (CIGSe) thin film solar cells were fabricated by direct inkjet printing of Cu(In,Ga)S2 (CIGS) nanoparticles followed by rapid thermal annealing under selenium vapor. Inkjet printing is a low-cost, low-waste, and flexible patterning method which can be used for deposition of solution-based or nanoparticle-based CIGS films with high throughput. XRD and Raman spectra indicate that no secondary phase is formed in the as-deposited CIGS film since quaternary chalcopyrite nanoparticles are used as the base solution for printing. Besides, CIGSe films with various Cu/(In + Ga) ratios could be obtained by finely tuning the composition of CIGS nanoparticles contained in the ink, which was found to strongly influence the devices performance and film morphology. To date, this is the first successful fabrication of a solar device by inkjet printing of CIGS nanoparticles.

The competing roles of i-ZnO in Cu(In,Ga)Se2 solar cells

NARCIS (Netherlands)

Williams, B.L.; Zardetto, V.; Kniknie, B.; Verheijen, M.A.; Kessels, W.M.M.; Creatore, M.

2016-01-01

The electrical role of the highly resistive and transparent (HRT) i-ZnO layer in Cu(In, Ga)Se2(CIGS) solar cells is investigated. By tuning the resistivity of atomic layer deposited (ALD) i-ZnO through the use of post-growth O2-plasma treatments, it is shown that low i-ZnO carrier densities (i.e.

Strategies to reduce the open-circuit voltage deficit in Cu2ZnSn(S,Se)4 thin film solar cells

Science.gov (United States)

Kim, Jekyung; Shin, Byungha

2017-09-01

Cu2ZnSn(S,Se)4 thin film solar cell has attracted significant attention in thin film solar cell technologies considering its low-cost, non-toxicity, and earth-abundance. However, the highest efficiency still remains at 12.6%, far below the theoretical efficiency of Shockley-Queisser (SQ) limit of around 30%. The limitation behind such shortcoming in the device performance was reported to stem primarily from a high V oc deficit compared to other thin film solar cell technologies such as CdTe or Cu(In,Ga)Se2 (CIGS), whose origins are attributed to the prevalence of band tailing from cation disordering as well as to the high recombination at the interfaces. In this report, systematic studies on the causes of a high V oc deficit and associated remarkable approaches to achieve high V oc have been reviewed, provided with a guidance on the future direction of CZTSSe research in resolving the high V oc deficit issue. [Figure not available: see fulltext.

Effect of selenization time on the structural and morphological properties of Cu(In,Ga)Se2 thin films absorber layers using two step growth process

Science.gov (United States)

Korir, Peter C.; Dejene, Francis B.

2018-04-01

In this work two step growth process was used to prepare Cu(In, Ga)Se2 thin film for solar cell applications. The first step involves deposition of Cu-In-Ga precursor films followed by the selenization process under vacuum using elemental selenium vapor to form Cu(In,Ga)Se2 film. The growth process was done at a fixed temperature of 515 °C for 45, 60 and 90 min to control film thickness and gallium incorporation into the absorber layer film. The X-ray diffraction (XRD) pattern confirms single-phase Cu(In,Ga)Se2 film for all the three samples and no secondary phases were observed. A shift in the diffraction peaks to higher 2θ (2 theta) values is observed for the thin films compared to that of pure CuInSe2. The surface morphology of the resulting film grown for 60 min was characterized by the presence of uniform large grain size particles, which are typical for device quality material. Photoluminescence spectra show the shifting of emission peaks to higher energies for longer duration of selenization attributed to the incorporation of more gallium into the CuInSe2 crystal structure. Electron probe microanalysis (EPMA) revealed a uniform distribution of the elements through the surface of the film. The elemental ratio of Cu/(In + Ga) and Se/Cu + In + Ga strongly depends on the selenization time. The Cu/In + Ga ratio for the 60 min film is 0.88 which is in the range of the values (0.75-0.98) for best solar cell device performances.

Charge carrier transport in Cu(In,Ga)Se2 thin-film solar-cells studied by electron beam induced current and temperature and illumination dependent current voltage analysis

International Nuclear Information System (INIS)

Nichterwitz, Melanie

2012-01-01

This work contributes to the understanding of generation dependent charge-carrier transport properties in Cu(In,Ga)Se 2 (CIGSe)/ CdS/ ZnO solar cells and a consistent model for the electronic band diagram of the heterojunction region of the device is developed. Cross section electron-beam induced current (EBIC) and temperature and illumination dependent current voltage (IV) measurements are performed on CIGSe solar cells with varying absorber layer compositions and CdS thickness. For a better understanding of possibilities and limitations of EBIC measurements applied on CIGSe solar cells, detailed numerical simulations of cross section EBIC profiles for varying electron beam and solar cell parameters are performed and compared to profiles obtained from an analytical description. Especially the effects of high injection conditions are considered. Even though the collection function of the solar cell is not independent of the generation function of the electron beam, the local electron diffusion length in CIGSe can still be extracted. Grain specific values ranging from (480±70) nm to (2.3±0.2) μm are determined for a CuInSe 2 absorber layer and a value of (2.8±0.3) μm for CIGSe with a Ga-content of 0.3. There are several models discussed in literature to explain generation dependent charge carrier transport, all assuming a high acceptor density either located in the CIGSe layer close to the CIGSe/CdS interface (p + layer), within the CdS layer or at the CdS/ZnO interface. In all models, a change in charge carrier collection properties is caused by a generation dependent occupation probability of the acceptor type defect state and the resulting potential distribution throughout the device. Numerical simulations of EBIC and IV data are performed with parameters according to these models. The model that explains the experimental data best is that of a p + layer at the CIGSe/CdS interface and acceptor type defect states at the CdS/ZnO interface. The p + layer leads

Progress in Thin Film Solar Cells Based on Cu2ZnSnS4

Directory of Open Access Journals (Sweden)

Hongxia Wang

2011-01-01

Full Text Available The research in thin film solar cells has been dominated by light absorber materials based on CdTe and Cu(In,GaSe2 (CIGS in the last several decades. The concerns of environment impact of cadmium and the limited availability of indium in those materials have driven the research towards developing new substitute light absorbers made from earth abundant, environment benign materials. Cu2ZnSnS4 (CZTS semiconductor material has emerged as one of the most promising candidates for this aim and has attracted considerable interest recently. Significant progress in this relatively new research area has been achieved in the last three years. Over 130 papers on CZTS have been published since 2007, and the majority of them are on the preparation of CZTS thin films by different methods. This paper, will review the wide range of techniques that have been used to deposit CZTS semiconductor thin films. The performance of the thin film solar cells using the CZTS material will also be discussed.

Micro solar concentrators: Design and fabrication for microcells arrays

Science.gov (United States)

Jutteau, Sébastien; Paire, Myriam; Proise, Florian; Lombez, Laurent; Guillemoles, Jean-François

2015-09-01

In this work we look at a micro-concentrating system adapted to a new type of concentrator photovoltaic material, well known for flate-plate applications, Cu(In,Ga)Se2. Cu(In,Ga)Se2 solar cells are polycrystalline thin film devices that can be deposited by a variety of techniques. We proposed to use a microcell architecture [1], [2], with lateral dimensions varying from a few μm to hundreds of μm, to adapt the film cell to concentration conditions. A 5% absolute efficiency increase on Cu(In,Ga)Se2 microcells at 475 suns has been observed for a final efficiency of 21.3%[3]. We study micro-concentrating systems adapted to the low and middle concentration range, where thin film concentrator cells will lean to substrate fabrication simplification and cost savings. Our study includes optical design, fabrication and experimental tests of prototypes.

Improvements in CdTe- and CIGS-based thin-film solar cells and investigation on new materials for photovoltaic applications.

OpenAIRE

Rosa, Greta

2018-01-01

Currently, thin-film solar cells are one of the most promising technologies for low-cost renewable energy production. CdTe- and CuInGaSe2-based cells, which achieved record efficiencies of 22.1% and 22.6% respectively, are the most attractive among thin-film solar cells. These high efficiencies have had a huge influence in making them highly competitive in the photovoltaic market, with an estimated final cost per module lower than US $ 0.50 per peak-watt. At the Thin Film Laboratory of the...

Single-graded CIGS with narrow bandgap for tandem solar cells.

Science.gov (United States)

Feurer, Thomas; Bissig, Benjamin; Weiss, Thomas P; Carron, Romain; Avancini, Enrico; Löckinger, Johannes; Buecheler, Stephan; Tiwari, Ayodhya N

2018-01-01

Multi-junction solar cells show the highest photovoltaic energy conversion efficiencies, but the current technologies based on wafers and epitaxial growth of multiple layers are very costly. Therefore, there is a high interest in realizing multi-junction tandem devices based on cost-effective thin film technologies. While the efficiency of such devices has been limited so far because of the rather low efficiency of semitransparent wide bandgap top cells, the recent rise of wide bandgap perovskite solar cells has inspired the development of new thin film tandem solar devices. In order to realize monolithic, and therefore current-matched thin film tandem solar cells, a bottom cell with narrow bandgap (~1 eV) and high efficiency is necessary. In this work, we present Cu(In,Ga)Se 2 with a bandgap of 1.00 eV and a maximum power conversion efficiency of 16.1%. This is achieved by implementing a gallium grading towards the back contact into a CuInSe 2 base material. We show that this modification significantly improves the open circuit voltage but does not reduce the spectral response range of these devices. Therefore, efficient cells with narrow bandgap absorbers are obtained, yielding the high current density necessary for thin film multi-junction solar cells.

Three-dimensional reciprocal space profile of an individual nanocrystallite inside a thin-film solar cell absorber layer

International Nuclear Information System (INIS)

Slobodskyy, Taras; Schroth, Philip; Minkevich, Andrey; Grigoriev, Daniil; Fohtung, Edwin; Riotte, Markus; Baumbach, Tilo; Powalla, Michael; Lemmer, Uli; Slobodskyy, Anatoliy

2013-01-01

The strain profile of an individual Cu(In,Ga)Se 2 nanocrystallite in a solar cell absorber layer is accessed using synchrotron radiation. We find that the investigated crystallite is inhomogeneously strained. The strain is most likely produced by a combination of intergranular strain and composition variations in nanocrystals inside the polycrystalline semiconductor film and carries information about the intercrystalline interaction. The measurements are made nondestructively and without additional sample preparation or x-ray beam nanofocusing. This is the first step towards measurements of strain profiles of individual crystallites inside a working solar cell. (paper)

Surface Passivation of CIGS Solar Cells Using Gallium Oxide

KAUST Repository

Garud, Siddhartha

2018-02-27

This work proposes gallium oxide grown by plasma-enhanced atomic layer deposition, as a surface passivation material at the CdS buffer interface of Cu(In,Ga)Se2 (CIGS) solar cells. In preliminary experiments, a metal-insulator-semiconductor (MIS) structure is used to compare aluminium oxide, gallium oxide, and hafnium oxide as passivation layers at the CIGS-CdS interface. The findings suggest that gallium oxide on CIGS may show a density of positive charges and qualitatively, the least interface trap density. Subsequent solar cell results with an estimated 0.5 nm passivation layer show an substantial absolute improvement of 56 mV in open-circuit voltage (VOC), 1 mA cm−2 in short-circuit current density (JSC), and 2.6% in overall efficiency as compared to a reference (with the reference showing 8.5% under AM 1.5G).

Defects in Cu(InGa)Se2/CdS heterostructure films induced by hydrogen ion implantation

International Nuclear Information System (INIS)

Yakushev, M.V.; Tomlinson, R.D.; Hill, A.E.; Pilkington, R.D.; Mudryi, A.V.; Bondar, I.V.; Victorov, I.A.; Gremenok, V.F.; Shakin, I.A.; Patuk, A.I.

1999-01-01

The influence of H + ion implantation on the photoluminescence properties of Cu(InGa)Se 2 /CdS heterostructures has been studied. This treatment was found to increase the photoluminescence intensity of donor-acceptor band at 1.13 eV because of the passivation by hydrogen atoms of the non-radiative recombination centers on the boundary of Cu(InGa)Se 2 and CdS layers. Two broad bands peaks at 0.96 eV and at 0.82 eV in photoluminescence spectra of ion-implanted Cu(InGa)Se 2 films have been found. The tentative model to explain the origin of the broad photoluminescence bands has been discussed

Proposed suitable electron reflector layer materials for thin-film CuIn1-xGaxSe2 solar cells

Science.gov (United States)

Sharbati, Samaneh; Gharibshahian, Iman; Orouji, Ali A.

2018-01-01

This paper investigates the electrical properties of electron reflector layer to survey materials as an electron reflector (ER) for chalcopyrite CuInGaSe solar cells. The purpose is optimizing the conduction-band and valence-band offsets at ER layer/CIGS junction that can effectively reduce the electron recombination near the back contact. In this work, an initial device model based on an experimental solar cell is established, then the properties of a solar cell with electron reflector layer are physically analyzed. The electron reflector layer numerically applied to baseline model of thin-film CIGS cell fabricated by ZSW (efficiency = 20.3%). The improvement of efficiency is achievable by electron reflector layer materials with Eg > 1.3 eV and -0.3 AsS4 as well as CuIn1-xGaxSe (x > 0.5) are efficient electron reflector layer materials, so the potential improvement in efficiency obtained relative gain of 5%.

Scanning electron microscopical examination of the impact of laser patterning on microscopic inhomogeneities of Cu(In,Ga)(Se,S)2 absorbers produced by rapid thermal processing

International Nuclear Information System (INIS)

Künecke, U.; Hölzing, A.; Jost, S.; Lechner, R.; Vogt, H.; Heiß, A.; Palm, J.; Hock, R.; Wellmann, P.

2013-01-01

Laser scribing of the Mo back electrode is commonly applied to define the cell structure of Cu(In,Ga)(Se,S) 2 (CIGSSe) thin film solar cells. The patterning process was performed on laboratory samples using ns and ps pulse length laser processes. After structuring, CIGSSe absorbers were processed by rapid thermal processing (RTP) of stacked elemental layer precursors. Microscopic inhomogeneities were investigated on different sample positions. For samples structured with ns pulse, the absorber morphology in the laser line vicinity is different as compared to the morphology in the unstructured cell area. Scanning electron microscopy and energy-dispersive X-ray spectroscopy show significant changes in the absorber grain size and chemical composition. Close to the laser line, the typically observed Ga accumulation on the back contact is less pronounced and more Ga is incorporated closer to the surface leading to a smaller grain size. The observed changes are attributed to partial damaging of a diffusion barrier between glass and Mo induced by the ns laser process, which allows diffusion of sodium from the glass substrate into the absorber during RTP. The enhanced Ga incorporation closer to the surface is an indication for the influence of sodium on the local phase development during RTP. The damages of the diffusion barrier can be effectively prevented by the application of a ps laser scribing process. CIGSSe absorbers processed on samples structured with ps pulse length do not show the described microscopic inhomogeneities around the laser line. - Highlights: ► Scanning electron microscopy on Cu(In,Ga)(Se,S) 2 solar cell absorbers ► Laser patterning with ns laser pulse damages the sodium diffusion barrier. ► Improved laser patterning with ps laser pulse leaves diffusion barrier intact. ► Additional sodium changes phase development during absorber formation. ► Gallium content is increased at surface and decreased at backside of absorber

Growth of polycrystalline Cu(In,Ga)Se2 thin films using a radio frequency-cracked Se-radical beam source and application for photovoltaic devices

International Nuclear Information System (INIS)

Ishizuka, Shogo; Shibata, Hajime; Yamada, Akimasa; Fons, Paul; Sakurai, Keiichiro; Matsubara, Koji; Niki, Shigeru

2007-01-01

Cu(In,Ga)Se 2 (CIGS) thin films were grown using a rf-cracked Se-radical beam source. A unique combination of film properties, a highly dense and smooth surface with large grain size, is shown. These features seem to have no significant influence on the photovoltaic performance. Defect control in bulk CIGS leading to corresponding variations in the electrical and photoluminescence properties was found to be possible by regulating the Se-radical source parameters. A competitive energy conversion efficiency of 17.5%, comparable to that of a Se-evaporative source grown CIGS device, has been demonstrated from a solar cell fabricated using a Se-radical source grown CIGS absorber

Controllable Growth of Ga Film Electrodeposited from Aqueous Solution and Cu(In,Ga)Se2 Solar Cells.

Science.gov (United States)

Bi, Jinlian; Ao, Jianping; Gao, Qing; Zhang, Zhaojing; Sun, Guozhong; He, Qing; Zhou, Zhiqiang; Sun, Yun; Zhang, Yi

2017-06-07

Electrodepositon of Ga film is very challenging due to the high standard reduction potential (-0.53 V vs SHE for Ga 3+ ). In this study, Ga film with compact structure was successfully deposited on the Mo/Cu/In substrate by the pulse current electrodeposition (PCE) method using GaCl 3 aqueous solution. A high deposition rate of Ga 3+ and H + can be achieved by applying a large overpotential induced by high pulse current. In the meanwhile, the concentration polarization induced by cation depletion can be minimized by changing the pulse frequency and duty cycle. Uniform and smooth Ga film was fabricated at high deposition rate with pulse current density 125 mA/cm 2 , pulse frequency 5 Hz, and duty cycle 0.25. Ga film was then selenized together with electrodeposited Cu and In films to make a CIGSe absorber film for solar cells. The solar cell based on the Ga film presents conversion efficiency of 11.04%, fill factor of 63.40%, and V oc of 505 mV, which is much better than those based on the inhomogeneous and rough Ga film prepared by the DCE method, indicating the pulse current electrodeposition process is promising for the fabrication of CIGSe solar cell.

Multi-Material Front Contact for 19% Thin Film Solar Cells

Directory of Open Access Journals (Sweden)

Joop van Deelen

2016-02-01

Full Text Available The trade-off between transmittance and conductivity of the front contact material poses a bottleneck for thin film solar panels. Normally, the front contact material is a metal oxide and the optimal cell configuration and panel efficiency were determined for various band gap materials, representing Cu(In,GaSe2 (CIGS, CdTe and high band gap perovskites. Supplementing the metal oxide with a metallic copper grid improves the performance of the front contact and aims to increase the efficiency. Various front contact designs with and without a metallic finger grid were calculated with a variation of the transparent conductive oxide (TCO sheet resistance, scribing area, cell length, and finger dimensions. In addition, the contact resistance and illumination power were also assessed and the optimal thin film solar panel design was determined. Adding a metallic finger grid on a TCO gives a higher solar cell efficiency and this also enables longer cell lengths. However, contact resistance between the metal and the TCO material can reduce the efficiency benefit somewhat.

To Enhance Performance of Light Soaking Process on ZnS/CuIn1-xGaxSe2 Solar Cell

Directory of Open Access Journals (Sweden)

Yu-Jen Hsiao

2013-01-01

Full Text Available The ZnS/CuInGaSe2 heterojunction solar cell fabricated on Mo coated glass is studied. The crystallinity of the CIGS absorber layer is prepared by coevaporated method and the ZnS buffer layer with a band gap of 3.21 eV. The MoS2 phase was also found in the CuInGaSe2/Mo system form HRTEM. The light soaking effect of photoactive film for 10 min results in an increase in F.F. from 55.8 to 64%, but series resistivity from 7.4 to 3.8 Ω. The efficiency of the devices improved from 8.12 to 9.50%.

Effects of potassium on kesterite solar cells: Similarities, differences and synergies with sodium

Directory of Open Access Journals (Sweden)

S. G. Haass

2018-01-01

Full Text Available Addition of alkali dopants is essential for achieving high-efficiency conversion efficiency of thin film solar cells based on chalcogenide semiconductors like Cu(In,GaSe2 (CIGS and Cu2ZnSn(S,Se4 (CZTSSe also called kesterite. Whereas the treatment with potassium allows boosting the performance of CIGS solar cells as compared to the conventional sodium doping, it is debated if similar effects can be expected for kesterite solar cells. Here the influence of potassium is investigated by introducing the dopant during the solution processing of kesterite absorbers. It is confirmed that the presence of potassium leads to an enhanced grain growth and a ten-fold lower potassium concentration is sufficient for obtaining grain size similar to sodium-containing absorbers. Potassium is located predominantly at grain boundaries and it suppresses incorporation of sodium into the absorber layer. The potassium doping increases the apparent carrier concentration to ∼2×1016 cm-3 for a potassium concentration of 0.2 at%. The potassium-doped solar cells yield conversion efficiency close to 10%, on par with only sodium-doped samples. Co-doping with potassium and sodium has not revealed any beneficial synergetic effects and it is concluded that both dopants exhibit similar effects on the kesterite solar cell performance.

Electrodeposition of ZnO-doped films as window layer for Cd-free CIGS-based solar cells

Science.gov (United States)

Tsin, Fabien; Vénérosy, Amélie; Hildebrandt, Thibaud; Hariskos, Dimitrios; Naghavi, Negar; Lincot, Daniel; Rousset, Jean

2016-02-01

The Cu(In,Ga)Se2 (CIGS) thin film solar cell technology has made a steady progress within the last decade reaching efficiency up to 22.3% on laboratory scale, thus overpassing the highest efficiency for polycrystalline silicon solar cells. High efficiency CIGS modules employ a so-called buffer layer of cadmium sulfide CdS deposited by Chemical Bath Deposition (CBD), which presence and Cd-containing waste present some environmental concerns. A second potential bottleneck for CIGS technology is its window layer made of i-ZnO/ZnO:Al, which is deposited by sputtering requiring expensive vacuum equipment. A non-vacuum deposition of transparent conductive oxide (TCO) relying on simpler equipment with lower investment costs will be more economically attractive, and could increase competitiveness of CIGS-based modules with the mainstream silicon-based technologies. In the frame of Novazolar project, we have developed a low-cost aqueous solution photo assisted electrodeposition process of the ZnO-based window layer for high efficiency CIGS-based solar cells. The window layer deposition have been first optimized on classical CdS buffer layer leading to cells with efficiencies similar to those measured with the sputtered references on the same absorber (15%). The the optimized ZnO doped layer has been adapted to cadmium free devices where the CdS is replaced by chemical bath deposited zinc oxysulfide Zn(S,O) buffer layer. The effect of different growth parameters has been studied on CBD-Zn(S,O)-plated co-evaporated Cu(In,Ga)Se2 substrates provided by the Zentrum für Sonnenenergie-und Wasserstoff-Forschung (ZSW). This optimization of the electrodeposition of ZnO:Cl on CIGS/Zn(S,O) stacks led to record efficiency of 14%, while the reference cell with a sputtered (Zn,Mg)O/ZnO:Al window layer has an efficiency of 15.2%.

Potassium-induced surface modification of Cu(In,Ga)Se2 thin films for high-efficiency solar cells.

Science.gov (United States)

Chirilă, Adrian; Reinhard, Patrick; Pianezzi, Fabian; Bloesch, Patrick; Uhl, Alexander R; Fella, Carolin; Kranz, Lukas; Keller, Debora; Gretener, Christina; Hagendorfer, Harald; Jaeger, Dominik; Erni, Rolf; Nishiwaki, Shiro; Buecheler, Stephan; Tiwari, Ayodhya N

2013-12-01

Thin-film photovoltaic devices based on chalcopyrite Cu(In,Ga)Se2 (CIGS) absorber layers show excellent light-to-power conversion efficiencies exceeding 20%. This high performance level requires a small amount of alkaline metals incorporated into the CIGS layer, naturally provided by soda lime glass substrates used for processing of champion devices. The use of flexible substrates requires distinct incorporation of the alkaline metals, and so far mainly Na was believed to be the most favourable element, whereas other alkaline metals have resulted in significantly inferior device performance. Here we present a new sequential post-deposition treatment of the CIGS layer with sodium and potassium fluoride that enables fabrication of flexible photovoltaic devices with a remarkable conversion efficiency due to modified interface properties and mitigation of optical losses in the CdS buffer layer. The described treatment leads to a significant depletion of Cu and Ga concentrations in the CIGS near-surface region and enables a significant thickness reduction of the CdS buffer layer without the commonly observed losses in photovoltaic parameters. Ion exchange processes, well known in other research areas, are proposed as underlying mechanisms responsible for the changes in chemical composition of the deposited CIGS layer and interface properties of the heterojunction.

Evidence for Chemical and Electronic Nonuniformities in the Formation of the Interface of RbF-Treated Cu(In,Ga)Se2 with CdS.

Science.gov (United States)

Nicoara, Nicoleta; Kunze, Thomas; Jackson, Philip; Hariskos, Dimitrios; Duarte, Roberto Félix; Wilks, Regan G; Witte, Wolfram; Bär, Marcus; Sadewasser, Sascha

2017-12-20

We report on the initial stages of CdS buffer layer formation on Cu(In,Ga)Se 2 (CIGSe) thin-film solar cell absorbers subjected to rubidium fluoride (RbF) postdeposition treatment (PDT). A detailed characterization of the CIGSe/CdS interface for different chemical bath deposition (CBD) times of the CdS layer is obtained from spatially resolved atomic and Kelvin probe force microscopy and laterally integrating X-ray spectroscopies. The observed spatial inhomogeneity in the interface's structural, chemical, and electronic properties of samples undergoing up to 3 min of CBD treatments is indicative of a complex interface formation including an incomplete coverage and/or nonuniform composition of the buffer layer. It is expected that this result impacts solar cell performance, in particular when reducing the CdS layer thickness (e.g., in an attempt to increase the collection in the ultraviolet wavelength region). Our work provides important findings on the absorber/buffer interface formation and reveals the underlying mechanism for limitations in the reduction of the CdS thickness, even when an alkali PDT is applied to the CIGSe absorber.

Intrinsic ZnO films fabricated by DC sputtering from oxygen-deficient targets for Cu(In,Ga)Se2 solar cell application

Institute of Scientific and Technical Information of China (English)

Chongyin Yang; DongyunWan; Zhou Wang; Fuqiang Huang

2011-01-01

Intrinsic zinc oxide films, normally deposited by radio frequency (RF) sputtering, are fabricated by direct current (DC) sputtering. The oxygen-deficient targets are prepared via a newly developed double crucible method. The 800-nm-thick film obtaines significantly higher carrier mobility compareing with that of the 800-nm-thick ZnO film. This is achieved by the widely used RF sputtering, which favors the prevention of carrier recombination at the interfaces and reduction of the series resistance of solar cells. The optimal ZnO film is used in a Cu (In, Ga) Se2 (CIGS) solar cell with a high efficiency of 11.57%. This letter demonstrates that the insulating ZnO films can be deposited by DC sputtering from oxygen-deficient ZnO targets to lower the cost of thin film solar cells.%Intrinsic zinc oxide films,normally deposited by radio frequency (RF) sputtering,are fabricated by direct current (DC) sputtering.The oxygen-deficient targets are prepared via a newly developed double crucible method.The 800-nm-thick film obtaines significantly higher carrier mobility compareing with that of the 800-nm-thick ZnO film.This is achieved by the widely used RF sputtering,which favors the prevention of carrier recombination at the interfaces and reduction of the series resistance of solar cells.The optimal ZnO film is used in a Cu (In,Ga) Se2 (C1GS) solar cell with a high efficiency of 11.57％.This letter demonstrates that the insulating ZnO films can be deposited by DC sputtering from oxygen-deficient ZnO targets to lower the cost of thin film solar cells.High resistance transparent intrinsic zinc oxide (i-ZnO)thin film has been widely nsed as the front electrode in transparent electronics and photovoltaic devices because of its low cost and nontoxicity.Owing to its unique characteristics of high transparency and adjustable resistivity in a certain range,the use of i-ZnO thin films as diffusion barrier layers of a-Si/μc-Si,CdTe,and CIGS thin-film solar cells has been advantageous

Alkali-templated surface nanopatterning of chalcogenide thin films: a novel approach toward solar cells with enhanced efficiency.

Science.gov (United States)

Reinhard, Patrick; Bissig, Benjamin; Pianezzi, Fabian; Hagendorfer, Harald; Sozzi, Giovanna; Menozzi, Roberto; Gretener, Christina; Nishiwaki, Shiro; Buecheler, Stephan; Tiwari, Ayodhya N

2015-05-13

Concepts of localized contacts and junctions through surface passivation layers are already advantageously applied in Si wafer-based photovoltaic technologies. For Cu(In,Ga)Se2 thin film solar cells, such concepts are generally not applied, especially at the heterojunction, because of the lack of a simple method yielding features with the required size and distribution. Here, we show a novel, innovative surface nanopatterning approach to form homogeneously distributed nanostructures (<30 nm) on the faceted, rough surface of polycrystalline chalcogenide thin films. The method, based on selective dissolution of self-assembled and well-defined alkali condensates in water, opens up new research opportunities toward development of thin film solar cells with enhanced efficiency.

Deliberate and Accidental Gas-Phase Alkali Doping of Chalcogenide Semiconductors: Cu(In,Ga)Se2.

Science.gov (United States)

Colombara, Diego; Berner, Ulrich; Ciccioli, Andrea; Malaquias, João C; Bertram, Tobias; Crossay, Alexandre; Schöneich, Michael; Meadows, Helene J; Regesch, David; Delsante, Simona; Gigli, Guido; Valle, Nathalie; Guillot, Jérome; El Adib, Brahime; Grysan, Patrick; Dale, Phillip J

2017-02-24

Alkali metal doping is essential to achieve highly efficient energy conversion in Cu(In,Ga)Se 2 (CIGSe) solar cells. Doping is normally achieved through solid state reactions, but recent observations of gas-phase alkali transport in the kesterite sulfide (Cu 2 ZnSnS 4 ) system (re)open the way to a novel gas-phase doping strategy. However, the current understanding of gas-phase alkali transport is very limited. This work (i) shows that CIGSe device efficiency can be improved from 2% to 8% by gas-phase sodium incorporation alone, (ii) identifies the most likely routes for gas-phase alkali transport based on mass spectrometric studies, (iii) provides thermochemical computations to rationalize the observations and (iv) critically discusses the subject literature with the aim to better understand the chemical basis of the phenomenon. These results suggest that accidental alkali metal doping occurs all the time, that a controlled vapor pressure of alkali metal could be applied during growth to dope the semiconductor, and that it may have to be accounted for during the currently used solid state doping routes. It is concluded that alkali gas-phase transport occurs through a plurality of routes and cannot be attributed to one single source.

Fundamental Materials Research and Advanced Process Development for Thin-Film CIS-Based Photovoltaics: Final Technical Report, 2 October 2001 - 30 September 2005

Energy Technology Data Exchange (ETDEWEB)

Anderson, T. J.; Li, S. S.; Crisalle, O. D.; Craciun, V.

2006-09-01

The objectives for this thin-film copper-indium-diselenide (CIS) solar cell project cover the following areas: Develop and characterize buffer layers for CIS-based solar cell; grow and characterize chemical-bath deposition of Znx Cd1-xS buffer layers grown on CIGS absorbers; study effects of buffer-layer processing on CIGS thin films characterized by the dual-beam optical modulation technique; grow epitaxial CuInSe2 at high temperature; study the defect structure of CGS by photoluminescence spectroscopy; investigate deep-level defects in Cu(In,Ga)Se2 solar cells by deep-level transient spectroscopy; conduct thermodynamic modeling of the isothermal 500 C section of the Cu-In-Se system using a defect model; form alpha-CuInSe2 by rapid thermal processing of a stacked binary compound bilayer; investigate pulsed non-melt laser annealing on the film properties and performance of Cu(In,Ga)Se2 solar cells; and conduct device modeling and simulation of CIGS solar cells.

Atmospheric spatial atomic layer deposition of Zn(O,S) buffer layer for Cu(In,Ga)Se2 solar cells

NARCIS (Netherlands)

Frijters, C.H.; Poodt, P.; Illeberi, A.

2016-01-01

Zinc oxysulfide has been grown by spatial atomic layer deposition (S-ALD) and successfully applied as buffer layer in Cu(In, Ga)Se2 (CIGS) solar cells. S-ALD combines high deposition rates (up to nm/s) with the advantages of conventional ALD, i.e. excellent control of film composition and superior

Investigating the electronic properties of Al2O3/Cu(In,GaSe2 interface

Directory of Open Access Journals (Sweden)

R. Kotipalli

2015-10-01

Full Text Available Atomic layer deposited (ALD Al2O3 films on Cu(In,GaSe2 (CIGS surfaces have been demonstrated to exhibit excellent surface passivation properties, which is advantageous in reducing recombination losses at the rear metal contact of CIGS thin-film solar cells. Here, we report, for the first time, experimentally extracted electronic parameters, i.e. fixed charge density (Qf and interface-trap charge density (Dit, for as-deposited (AD and post-deposition annealed (PDA ALD Al2O3 films on CIGS surfaces using capacitance–voltage (C-V and conductance-frequency (G-f measurements. These results indicate that the AD films exhibit positive fixed charges Qf (approximately 1012 cm−2, whereas the PDA films exhibit a very high density of negative fixed charges Qf (approximately 1013 cm−2. The extracted Dit values, which reflect the extent of chemical passivation, were found to be in a similar range of order (approximately 1012 cm−2 eV−1 for both AD and PDA samples. The high density of negative Qf in the bulk of the PDA Al2O3 film exerts a strong Coulomb repulsive force on the underlying CIGS minority carriers (ns, preventing them to recombine at the CIGS/Al2O3 interface. Using experimentally extracted Qf and Dit values, SCAPS simulation results showed that the surface concentration of minority carriers (ns in the PDA films was approximately eight-orders of magnitude lower than in the AD films. The electrical characterization and estimations presented in this letter construct a comprehensive picture of the interfacial physics involved at the Al2O3/CIGS interface.

A comparative study of the annealing behavior of Cu(In,Ga)(S,Se)2 based solar cells with an indium sulfide buffer layer, partly submitted to wet chemical treatments

International Nuclear Information System (INIS)

Hönes, C.; Hackenberg, J.; Zweigart, S.; Wachau, A.; Hergert, F.; Siebentritt, S.

2015-01-01

Indium sulfide thin films deposited via thermal evaporation from compound source material have been successfully utilized as a cadmium free buffer layer for Cu(In,Ga)Se 2 based solar cells. However, high efficiencies are only reached after an additional annealing step. In this work, the annealing behavior of Cu(In,Ga)(S,Se) 2 based indium sulfide buffered solar cells is compared to the annealing behavior of similar cells, which were submitted to wet chemical treatments partly containing cadmium ions. Upon annealing a significant improvement of the initial solar cell characteristics is observed for the untreated cell and is related to the increase of activation energy for the carrier recombination process and a decrease of the ideality factor within the one diode model. It is shown here that this improvement can also be achieved by wet treatments of the absorber prior to buffer layer deposition. Upon annealing these treated cells still gain in collection length but lose open circuit voltage, which is explained here within a model including a highly p-doped absorber surface layer and supported by simulations showing that a decrease in doping density of such a surface layer would lead to the observed effects

Thin film solar cell technology in Germany

International Nuclear Information System (INIS)

Diehl, W.; Sittinger, V.; Szyszka, B.

2005-01-01

Within the scope of limited nonrenewable energy resources and the limited capacity of the ecosystem for greenhouse gases and nuclear waste, sustainability is one important target in the future. Different energy scenarios showed the huge potential for photovoltaics (PV) to solve this energy problem. Nevertheless, in the last decade, PV had an average growth rate of over 20% per year. In 2002, the solar industry delivered more than 500 MWp/year of photovoltaic generators [A. Jaeger-Waldau, A European Roadmap for PV R and D, E-MRS Spring Meeting, (2003)]. More than 85% of the current production involves crystalline silicon technologies. These technologies still have a high cost reduction potential, but this will be limited by the silicon feedstock. On the other hand the so-called second generation thin film solar cells based on a-Si, Cu(In,Ga)(Se,S 2 (CIGS) or CdTe have material thicknesses of a few microns as a result of their direct band gap. Also, the possibility of circuit integration offers an additional cost reduction potential. Especially in Germany, there are a few companies who focus on thin film solar cells. Today, there are two manufacturers with production lines: the Phototronics (PST) division of RWE-Schott Solar with a-Si thin film technology and the former Antec Solar GmbH (now Antec Solar Energy GmbH) featuring the CdTe technology. A pilot line based on CIGS technology is run by Wuerth Solar GmbH. There is also a variety of research activity at other companies, namely, at Shell Solar, Sulfurcell Solartechnik GmbH, Solarion GmbH and the CIS-Solartechnik GmbH. We will give an overview on research activity on various thin film technologies, as well as different manufacturing and production processes in the companies mentioned above. (Author)

Characterization and Analysis of Ultrathin CIGS Films and Solar Cells Deposited by 3-Stage Process

Directory of Open Access Journals (Sweden)

Grace Rajan

2018-01-01

Full Text Available In view of the large-scale utilization of Cu(In,GaSe2 (CIGS solar cells for photovoltaic application, it is of interest not only to enhance the conversion efficiency but also to reduce the thickness of the CIGS absorber layer in order to reduce the cost and improve the solar cell manufacturing throughput. In situ and real-time spectroscopic ellipsometry (RTSE has been used conjointly with ex situ characterizations to understand the properties of ultrathin CIGS films. This enables monitoring the growth process, analyzing the optical properties of the CIGS films during deposition, and extracting composition, film thickness, grain size, and surface roughness which can be corroborated with ex situ measurements. The fabricated devices were characterized using current voltage and quantum efficiency measurements and modeled using a 1-dimensional solar cell device simulator. An analysis of the diode parameters indicates that the efficiency of the thinnest cells was restricted not only by limited light absorption, as expected, but also by a low fill factor and open-circuit voltage, explained by an increased series resistance, reverse saturation current, and diode quality factor, associated with an increased trap density.

Fabrication of Cu(In,Ga)Se2 thin films by a combination of mechanochemical and screen-printing/sintering processes

International Nuclear Information System (INIS)

Wada, T.; Matsuo, Y.; Nomura, S.; Nakamura, Y.; Miyamura, A.; Chiba, Y.; Konagai, M.; Yamada, A.

2006-01-01

We prepared fine Cu(In,Ga)Se 2 (CIGS) powder suitable for screen printing using a mechanochemical process. Particulate precursors were deposited in a thin layer by a screen-printing technique, the remaining organic solvent was removed from the screen-printed CIGS film and finally the porous precursor layer was sintered into a dense polycrystalline film by atmospheric-pressure firing. The crystal structure of the film was analyzed by X-ray diffraction and the microstructure was observed in a SEM. The thickness of the film was 5-10 μm with a grain size of about 2 μm. The films were also observed in a TEM. The grain size of the as-prepared powder was less than 1 μm; however, it enlarged to 2-3 μm after firing at 575 C under a Se ambient. Preliminary CIGS solar cells with our standard Al grid/B-doped ZnO/i-ZnO/ CdS/CIGS/Mo/soda-lime glass structure were fabricated. An efficiency of 2.7%, a V oc of 0.325 V, a J sc of 28.3 mA/cm 2 and a FF of 0.295 was obtained. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (Abstract Copyright [2006], Wiley Periodicals, Inc.)

Forward Technology Solar Cell Experiment First On-Orbit Data

Science.gov (United States)

Walters, R. J.; Garner, J. C.; Lam, S. N.; Vazquez, J. A.; Braun, W. R.; Ruth, R. E.; Warner, J. H.; Lorentzen, J. R.; Messenger, S. R.; Bruninga, R.;

Combinatorial study of NaF addition in CIGSe films for high efficiency solar cells

KAUST Repository

Eid, Jessica; Liang, Haifan; Gereige, Issam; Lee, Sang; Van Duren, Jeroen K J

2013-01-01

We report on a sodium fluoride (NaF) thickness variation study for the H2Se batch furnace selenization of sputtered Cu(In,Ga) films in a wide range of Cu(In,Ga) film compositions to form Cu(In,Ga)Se2 (CIGSe) films and solar cells. Literature review indicates lack of consensus on the mechanisms involved in Na altering CIGSe film properties. In this work, for sputtered and batch-selenized CIGSe, NaF addition results in reduced gallium content and an increase in grain size for the top portion of the CIGSe film, as observed by scanning electron microscopy and secondary ion mass spectrometry. The addition of up to 20nm of NaF resulted in an improvement in all relevant device parameters: open-circuit voltage, short-circuit current, and fill factor. The best results were found for 15nm NaF addition, resulting in solar cells with 16.0% active-area efficiency (without anti-reflective coating) at open-circuit voltage (VOC) of 674mV. © 2013 John Wiley & Sons, Ltd.

Combinatorial study of NaF addition in CIGSe films for high efficiency solar cells

KAUST Repository

Eid, Jessica

2013-12-04

We report on a sodium fluoride (NaF) thickness variation study for the H2Se batch furnace selenization of sputtered Cu(In,Ga) films in a wide range of Cu(In,Ga) film compositions to form Cu(In,Ga)Se2 (CIGSe) films and solar cells. Literature review indicates lack of consensus on the mechanisms involved in Na altering CIGSe film properties. In this work, for sputtered and batch-selenized CIGSe, NaF addition results in reduced gallium content and an increase in grain size for the top portion of the CIGSe film, as observed by scanning electron microscopy and secondary ion mass spectrometry. The addition of up to 20nm of NaF resulted in an improvement in all relevant device parameters: open-circuit voltage, short-circuit current, and fill factor. The best results were found for 15nm NaF addition, resulting in solar cells with 16.0% active-area efficiency (without anti-reflective coating) at open-circuit voltage (VOC) of 674mV. © 2013 John Wiley & Sons, Ltd.

Comparison of polycrystalline Cu(In,Ga)Se2 device efficiency with junction depth and interfacial structure

International Nuclear Information System (INIS)

Nelson, A.J.; Gabor, A.M.; Contreras, M.A.; Tuttle, J.R.; Noufi, R.; Sobol, P.E.; Asoka-Kumar, P.; Lynn, K.G.

1995-01-01

X-ray photoemission spectroscopy (XPS) and positron annihilation spectroscopy (PAS) have been used to characterize the surface versus bulk composition, electronic, and physical structure of polycrystalline Cu(In,Ga)Se 2 thin-film interfaces. Angle-resolved high-resolution photoemission measurements on the valence-band electronic structure and Cu 2p, In 3d, Ga 2p, and Se 3d core lines were used to evaluate the surface and near surface chemistry of CuInSe 2 and Cu(In,Ga)Se 2 device grade thin films. XPS compositional depth profiles were also acquired from the near surface region. PAS was used as a nondestructive, depth-sensitive probe for open-volume-type defects. Results of these measurements are related to device efficiencies to show the effects of compositional variations and defect concentrations in the near surface region on device performance. copyright 1995 American Institute of Physics

Improvement of minority carrier lifetime and conversion efficiency by Na incorporation in Cu2ZnSnSe4 solar cells

Science.gov (United States)

Tampo, Hitoshi; Kim, Kang Min; Kim, Shinho; Shibata, Hajime; Niki, Shigeru

2017-07-01

The effect of Na incorporation in Cu2ZnSnSe4 (CZTSe) solar cells grown by the coevaporation method was investigated via photoluminescence (PL) and time-resolved PL (TRPL) measurements as well as photovoltaic properties. The TRPL decay curves showed a monotonic increase in CZTSe lifetime from 2 to 15 ns with increasing Na incorporation, which corresponds to the increase in the correction length estimated by quantum efficiency measurements. The TRPL decay curves included two decay components, fast and slow, which were discussed and concluded as originating from the recombination at the surface and bulk of CZTSe, respectively, which is also supported by TPRL measurements with various excitation wavelengths. The lifetime of CZTSe is limited by the surface-related nonradiative recombination compared to Cu(In,Ga)Se2 devices which are fabricated with the same device structure except for the absorber, and at present, it is concluded that the surface recombination of the CZTSe limits the cell performance. In addition to the above investigations, the relationship between the CZTSe bulk lifetime and carrier concentration is discussed; deep nonradiative recombination centers in the CZTSe bulk were found to decrease by one order of magnitude with Na incorporation. The Na incorporation primarily resulted in improvement in the short circuit current density and fill factor and not in the open circuit voltage, and the results are discussed. The best performing CZTSe solar cell with Na incorporation showed a conversion efficiency of 9.57%.

Electrodeposition of ZnO window layer for an all-atmospheric fabrication process of chalcogenide solar cell

Science.gov (United States)

Tsin, Fabien; Venerosy, Amélie; Vidal, Julien; Collin, Stéphane; Clatot, Johnny; Lombez, Laurent; Paire, Myriam; Borensztajn, Stephan; Broussillou, Cédric; Grand, Pierre Philippe; Jaime, Salvador; Lincot, Daniel; Rousset, Jean

2015-01-01

This paper presents the low cost electrodeposition of a transparent and conductive chlorine doped ZnO layer with performances comparable to that produced by standard vacuum processes. First, an in-depth study of the defect physics by ab-initio calculation shows that chlorine is one of the best candidates to dope the ZnO. This result is experimentally confirmed by a complete optical analysis of the ZnO layer deposited in a chloride rich solution. We demonstrate that high doping levels (>1020 cm−3) and mobilities (up to 20 cm2 V−1 s−1) can be reached by insertion of chlorine in the lattice. The process developed in this study has been applied on a CdS/Cu(In,Ga)(Se,S)2 p-n junction produced in a pilot line by a non vacuum process, to be tested as solar cell front contact deposition method. As a result efficiency of 14.3% has been reached opening the way of atmospheric production of Cu(In,Ga)(Se,S)2 solar cell. PMID:25753657

Tanzania Journal of Science - Vol 38, No 2 (2012)

African Journals Online (AJOL)

Electrical Properties of DC Reactive Magnetron Sputtered ZnO:Al Films from Optical ... of ZnO:Al/ZnO Double Layers and the Cu(In,Ga)Se2 Solar Cell Efficiencies · EMAIL ... Management of Azole-Refractory Candida Species Using Boric Acid ...

In-situ sol-gel synthesis and thin film deposition of Cu(In,Ga)(S,Se)2 solar cells

International Nuclear Information System (INIS)

Oliveira, L.; Lyubenova, T.; Marti, R.; Fraga, D.; Rey, A.; Carda, J.; Kozhukharov, V.

2013-01-01

Full text: Nowadays chalcogenide-based solar cells, like Cu(In,Ga)Se 2 , are competitive in the photovoltaic market, due to its improved performances like higher efficiency (20,3%), long-time stability and excellent durability. In addition, CIGS stand out with an exceptionally high absorption coefficient (more than; 105/cm for 1.5eV) and higher energy photons. These properties make it an excellent candidate as an absorber material for large scale production of photovoltaic modules for building-integrated applications. Traditional methods of manufacture involve vacuum processes including co-evaporation and sputtering that increase production costs. With the aim to lower the expenses by using non-vacuum solution processes we propose an ‘in-situ’ sol-gel synthesis route and direct thin film deposition in the same production step. As a result, we achieved better stoichiometric control, simplicity in the procedure and cost reduction. In this work we describe a procedure to obtain CIGS absorber layer by soft chemistry technique and further deposition onto different substrates. Preparation parameters like precursors, chemical composition, solvents, thermal treatment factors (temperature, time, and atmosphere) were detailed studied. Finally, the resulting materials were characterized by X-Ray Diffraction (XRD), Scanning Electron Microscopy (SEM) coupled with Energy dispersive X-ray analysis (EDAX), UV-VIS Spectroscopy among others.; key words: sol-gel synthesis, thin film deposition, photovoltaic modules, solar cells

A one-dimensional Fickian model to predict the Ga depth profiles in three-stage Cu(In,Ga)Se2

International Nuclear Information System (INIS)

Rodriguez-Alvarez, H.; Mainz, R.; Sadewasser, S.

2014-01-01

We present a one-dimensional Fickian model that predicts the formation of a double Ga gradient during the fabrication of Cu(In,Ga)Se 2 thin films by three-stage thermal co-evaporation. The model is based on chemical reaction equations, structural data, and effective Ga diffusivities. In the model, the Cu(In,Ga)Se 2 surface is depleted from Ga during the deposition of Cu-Se in the second deposition stage, leading to an accumulation of Ga near the back contact. During the third deposition stage, where In-Ga-Se is deposited at the surface, the atomic fluxes within the growing layer are inverted. This results in the formation of a double Ga gradient within the Cu(In,Ga)Se 2 layer and reproduces experimentally observed Ga distributions. The final shape of the Ga depth profile strongly depends on the temperatures, times and deposition rates used. The model is used to evaluate possible paths to flatten the marked Ga depth profile that is obtained when depositing at low substrate temperatures. We conclude that inserting Ga during the second deposition stage is an effective way to achieve this.

Evaporación de Cu(In,GaSe2 en lámina delgada para aplicaciones fotovoltaicas

Directory of Open Access Journals (Sweden)

Guillén, C.

2004-04-01

Full Text Available The aim of this work is to study the structural and optical properties of Cu(In,GaSe2 (CIGS thin films after thermal and chemical treatments. Cu(In,GaSe2 thin films have been obtained by means of the selenization in vacuum or Ar of the metallic precursors evaporated sequentially. The sequence of evaporation was In/Ga/Cu/In. Single-phase chalcopyrite and polycrystalline CIGS films with (112 preferred orientation were obtained. An improvement in the crystallite feature and optical properties is observed after Ar selenization. Band gap energies, Eg, between 0.98 and 1.10 were obtained for different atomic ratios, being dominated by the Ga content. Thin films high absorption coefficient was reduced in band tails, specially when Cu content increases after chemical treatment in KCN.El objetivo de este trabajo es estudiar las propiedades estructurales y ópticas del Cu(In,GaSe2 (CIGS en lámina delgada tras diferentes tratamientos térmicos y químicos. El Cu(In,GaSe2 se ha obtenido mediante la selenización en vacío o Ar de los precursores metálicos evaporados secuencialmente. La secuencia de evaporación seguida fue In/Ga/Cu/In. Se obtuvieron láminas policristalinas de CIGS con estructura calcopirita fuertemente orientada en la dirección (112. Se observó una mejora de la naturaleza cristalina y de las propiedades ópticas tras la selenización en Ar. Se obtuvieron energías de banda prohibida, Eg, entre 0.98 y 1.10 eV para las diferentes relaciones atómicas, estando dominadas por el contenido de Ga. Se consiguió reducir la alta absorción por colas de banda de las láminas delgadas, especialmente cuando aumentaba el contenido de Cu, tras un tratamiento químico en KCN.

CIGS thin film solar cell prepared by reactive co-sputtering

Science.gov (United States)

Kim, Jeha; Lee, Ho-Sub; Park, Nae-Man

2013-09-01

The reactive co-sputtering was developed as a new way of preparing high quality CuInGaSe2(CIGS) films from two sets of targets; Cu0.6Ga 0.4 and Cu0.4In0.6 alloy and Cu and (In0.7Ga0.3)2Se3 compound targets. During sputtering, Cu, In, Ga metallic elements as well as the compound materials were reacted to form CIGS simultaneously in highly reactive elemental Se atmosphere generated by a thermal cracker. CIGS layer had been grown on Mo/soda-lime glass(SLG) at 500°C. For both sets of targets, we controlled the composition of CIGS thin film by changing the RF power for target components. All the films showed a preferential (112) orientation as observed from X-ray diffraction analysis. The composition ratios of CIGS were easily set to 0.71-0.95, 0.10-0.30 for [Cu]/[III] and [Ga]/[III], respectively. The grain size and the surface roughness of a CIGS film increased as the [Cu]/[III] ratios increased. The solar cells were fabricated using a standard base line process in the device structure of grid/ITO/i-ZnO/CdS/CIGS/Mo/ SLG. The best performance was obtained the performance of Voc = 0.45 V, Jsc =35.6, FF = 0.535, η = 8.6% with a 0.9 μm-CIGS solar cell from alloy targets while Voc = 0.54 V, Jsc =30.8, FF = 0.509, η = 8.5% with a 0.8 μm-CIGS solar cell from Cu and (In0.7Ga0.3)2Se3.

CIGS thin films, solar cells, and submodules fabricated using a rf-plasma cracked Se-radical beam source

International Nuclear Information System (INIS)

Ishizuka, Shogo; Yamada, Akimasa; Shibata, Hajime; Fons, Paul; Niki, Shigeru

2011-01-01

Coevaporated Cu(In,Ga)Se 2 (CIGS) film growth using a rf-plasma cracked Se-radical beam (R-Se) source leads to a significant reduction in the amount of raw Se source material wasted during growth and exhibits unique film properties such as highly dense, smooth surfaces and large grain size. R-Se grown CIGS solar cells also show concomitant unique properties different from conventional evaporative Se (E-Se) source grown CIGS cells. In the present work, the impact of modified surfaces, interfaces, and bulk crystal properties of R-Se grown CIGS films on the solar cell performance was studied. When a R-Se source was used, Na diffusion into CIGS layers was enhanced while a remarkable diffusion of elemental Ga and Se into Mo back contact layers was observed. Improvements in the bulk crystal quality as manifested by large grain size and increased Na concentration with the use of a R-Se source is expected to be effective to improve photovoltaic performance. Using a R-Se source for the growth of CIGS absorber layers at a relatively low growth temperature, we have successfully demonstrated a monolithically integrated submodule efficiency of 15.0% (17 cells, aperture area of 76.5 cm 2 ) on 0.25-mm thick soda-lime glass substrates.

Detailed Visualization of Phase Evolution during Rapid Formation of Cu(InGa)Se2 Photovoltaic Absorber from Mo/CuGa/In/Se Precursors.

Science.gov (United States)

Koo, Jaseok; Kim, Sammi; Cheon, Taehoon; Kim, Soo-Hyun; Kim, Woo Kyoung

2018-03-02

Amongst several processes which have been developed for the production of reliable chalcopyrite Cu(InGa)Se 2 photovoltaic absorbers, the 2-step metallization-selenization process is widely accepted as being suitable for industrial-scale application. Here we visualize the detailed thermal behavior and reaction pathways of constituent elements during commercially attractive rapid thermal processing of glass/Mo/CuGa/In/Se precursors on the basis of the results of systematic characterization of samples obtained from a series of quenching experiments with set-temperatures between 25 and 550 °C. It was confirmed that the Se layer crystallized and then melted between 250 and 350 °C, completely disappearing at 500 °C. The formation of CuInSe 2 and Cu(InGa)Se 2 was initiated at around 450 °C and 550 °C, respectively. It is suggested that pre-heat treatment to control crystallization of Se layer should be designed at 250-350 °C and Cu(InGa)Se 2 formation from CuGa/In/Se precursors can be completed within a timeframe of 6 min.

Insights into cadmium diffusion mechanisms in two-stage diffusion profiles in solar-grade Cu(In,Ga)Se2 thin films

International Nuclear Information System (INIS)

Biderman, N. J.; Sundaramoorthy, R.; Haldar, Pradeep; Novak, Steven W.; Lloyd, J. R.

2015-01-01

Cadmium diffusion experiments were performed on polished copper indium gallium diselenide (Cu(In,Ga)Se 2 or CIGS) samples with resulting cadmium diffusion profiles measured by time-of-flight secondary ion mass spectroscopy. Experiments done in the annealing temperature range between 275 °C and 425 °C reveal two-stage cadmium diffusion profiles which may be indicative of multiple diffusion mechanisms. Each stage can be described by the standard solutions of Fick's second law. The slower cadmium diffusion in the first stage can be described by the Arrhenius equation D 1  = 3 × 10 −4  exp (− 1.53 eV/k B T) cm 2  s −1 , possibly representing vacancy-meditated diffusion. The faster second-stage diffusion coefficients determined in these experiments match the previously reported cadmium diffusion Arrhenius equation of D 2  = 4.8 × 10 −4  exp (−1.04 eV/k B T) cm 2  s −1 , suggesting an interstitial-based mechanism

Advances in Cost-Efficient Thin-Film Photovoltaics Based on Cu(In,Ga)Se2

OpenAIRE

Michael Powalla; Stefan Paetel; Dimitrios Hariskos; Roland Wuerz; Friedrich Kessler; Peter Lechner; Wiltraud Wischmann; Theresa Magorian Friedlmeier

2017-01-01

In this article, we discuss the leading thin-film photovoltaic (PV) technology based on the Cu(In,Ga)Se2 (CIGS) compound semiconductor. This contribution includes a general comparison with the conventional Si-wafer-based PV technology and discusses the basics of the CIGS technology as well as advances in world-record-level conversion efficiency, production, applications, stability, and future developments with respect to a flexible product. Once in large-scale mass production, the CIGS techno...

Effects of water vapor introduction during Cu(In1-xGax)Se2 deposition on thin film properties and solar cell performance

International Nuclear Information System (INIS)

Ishizuka, S.; Sakurai, K.; Yamada, A.; Matsubara, K.; Shibata, H.; Kojima, T.; Niki, S.; Yonemura, M.; Nakamura, S.; Nakanishi, H.

2006-01-01

The effects of water vapor introduction during the growth of Cu(In 1-x Ga x )Se 2 , specifically CuInSe 2 (CISe), Cu(In,Ga)Se 2 (CIGSe), and CuGaSe 2 (CGSe) thin films were studied. We have developed thus far a novel technique to improve CIGSe (x∝0.5) cell performance by means of water vapor introduction during CIGSe deposition. In this study, we have examined the effectiveness of water vapor introduction for other x-compositions (CISe and CGSe). Variations in the electrical properties observed in CIGSe (x∝0.5), that is, increasing hole density and conductivity with water vapor introduction, were also observed in CISe and CGSe. Water vapor introduction affected solar cell performance as well; open circuit voltages, short circuit current densities, and efficiencies were improved. The improvements in cell performance are thought to be related to annihilation of donor defects arising from Se-vacancies by incorporation of oxygen from the water vapor. In addition to this, the sodium content in the CIGSe layers was found to depend on the partial pressure of water vapor during deposition. This result suggests that the improvement mechanism is also related with the so-called 'Na-effects'. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (Abstract Copyright [2006], Wiley Periodicals, Inc.)

Research and development of photovoltaic power system. Optimization of bandgap of chalcopyrite semiconductors; Taiyoko hatsuden system no kenkyu kaihatsu. Kinseitaihaba no saitekika no kenkyu

Energy Technology Data Exchange (ETDEWEB)

Konagai, M [Tokyo Institute of Technology, Tokyo (Japan). Faculty of Engineering

1994-12-01

This paper reports the result obtained during fiscal 1994 on research on research on optimization of bandgap in thin film compound solar cells. In research on Cu(InGa)Se2 thin film solar cells by using a gas phase selenide making process, discussions were given on optimizing the following three processes: a process to raise temperature of a precursor film formed at a substrate temperature of about 150{degree}C, a selenide making process to perform annealing at about 500{degree}C, and a temperature reducing process. Good characteristics were obtained when selenium amount in the precursor is about 50%. In a bandgap control viewpoint, it was found that the conversion efficiency decreases rapidly when Ga composition is higher than 50%. A conversion efficiency of 14.9% was obtained to date at the Ga/(In+Ga) ratio of 0.4. In research on Cu(InGa)Se2 thin film solar cells by using a simultaneous deposition method, a conversion efficiency of 13.5% was obtained at a bandgap width of about 1.3 eV during research on manufacturing ZnO/CdS/Cu(InGa)Se2 thin film solar cells by using the simultaneous deposition method. Research has been carried out on manufacturing Cu(InGa)Se2 thin film solar cells using ZnSe interface layers. 8 figs.

Influence of selenium amount on the structural and electronic properties of Cu(In,Ga)Se{sub 2} thin films and solar cells formed by the stacked elemental layer process

Energy Technology Data Exchange (ETDEWEB)

Mueller, B.J., E-mail: bjm.mueller@web.de [Institute of Micro- and Nanomaterials, University of Ulm, D-89081 Ulm (Germany); Corporate Research, Robert Bosch GmbH, D-71272 Renningen (Germany); Opasanont, B.; Haug, V. [Corporate Research, Robert Bosch GmbH, D-71272 Renningen (Germany); Hergert, F. [Bosch Solar CISTech GmbH, D-14772 Brandenburg (Germany); Zweigart, S. [Corporate Research, Robert Bosch GmbH, D-71272 Renningen (Germany); Herr, U., E-mail: ulrich.herr@uni-ulm.de [Institute of Micro- and Nanomaterials, University of Ulm, D-89081 Ulm (Germany)

2016-06-01

In the following article the influence of selenium supply on the stacked elemental layer process during the final annealing step is investigated. We find that the Se supply strongly influences the phase formation in the Cu(In,Ga)Se {sub 2} resulting in a modified Ga/In distribution. The effects of Se supply on the structural and electronic properties of the films are reported. The solar cell performance has been investigated in detail using current voltage and external quantum efficiency measurements. We find that the chalcopyrite crystal formation is strongly influenced by the Se supply during the growth process. Furthermore the interdiffusion of Ga and In is accelerated with increasing Se amount. This has direct consequences on band gap and series resistance, which leads to changes in the values of short-circuit current density, open-circuit voltage and fill factor. The open-circuit voltage increases with increasing band gap of the Cu(In,Ga)Se {sub 2}, whereas the short-circuit current density decreases with increasing band gap. The fill factor is affected by the formation of MoSe {sub 2} at the back contact. The experimental findings are compared with the theoretical efficiency limits calculated from the Shockley–Queisser model, and also with numerical 1D SCAPS simulations. - Highlights: • Adjustment of the Ga/In distribution by the Se supply • Enhanced Ga incorporation near-surface • Interdiffusion coefficients of Ga/In are investigated. • Shockley–Queisser modeling and 1D SCAPS simulations • Fill factor is strongly coupled on the MoSe2/Mo ratio.

Optical Simulation of Light Management in CIGS Thin-Film Solar Cells Using Finite Element Method

Directory of Open Access Journals (Sweden)

Nikola Bednar

2015-12-01

Full Text Available In this paper we present an optical simulation of light management in Cu(In,GaSe2 thin-film solar cells with reduced absorber layer thickness, with the goal of absorption enhancement in the absorber layer. The light management was achieved by texturing of the substrate layer, and the conformal growth of all the following layers was assumed. Two texturing shapes have been explored: triangular and convex, with different periods and height aspect ratios. The simulations have shown that significant enhancement of absorption within the absorber layer can be achieved using the proposed geometry. The results showed that the triangular textures with small periods (100–200 nm and high aspect ratios have the most prominent effect on the enhancement of absorption within the absorber layer, although they are difficult to achieve experimentally.

Photovoltaic reciprocity and quasi-Fermi level splitting in nanostructure-based solar cells (Conference Presentation)

Science.gov (United States)

Aeberhard, Urs

2017-04-01

The photovoltaic reciprocity theory relates the electroluminescence spectrum of a solar cell under applied bias to the external photovoltaic quantum efficiency of the device as measured at short circuit conditions [1]. So far, the theory has been verified for a wide range of devices and material systems and forms the basis of a growing number of luminesecence imaging techniques used in the characterization of photovoltaic materials, cells and modules [2-5]. However, there are also some examples where the theory fails, such as in the case of amorphous silicon. In our contribution, we critically assess the assumptions made in the derivation of the theory and compare its predictions with rigorous formal relations as well as numerical computations in the framework of a comprehensive quantum-kinetic theory of photovoltaics [6] as applied to ultra-thin absorber architectures [7]. One of the main applications of the photovoltaic reciprocity relation is the determination of quasi-Fermi level splittings (QFLS) in solar cells from the measurement of luminescence. In nanostructure-based photovoltaic architectures, the determination of QFLS is challenging, but instrumental to assess the performance potential of the concepts. Here, we use our quasi-Fermi level-free theory to investigate existence and size of QFLS in quantum well and quantum dot solar cells. [1] Uwe Rau. Reciprocity relation between photovoltaic quantum efficiency and electrolumines- cent emission of solar cells. Phys. Rev. B, 76(8):085303, 2007. [2] Thomas Kirchartz and Uwe Rau. Electroluminescence analysis of high efficiency cu(in,ga)se2 solar cells. J. Appl. Phys., 102(10), 2007. [3] Thomas Kirchartz, Uwe Rau, Martin Hermle, Andreas W. Bett, Anke Helbig, and Jrgen H. Werner. Internal voltages in GaInP-GaInAs-Ge multijunction solar cells determined by electro- luminescence measurements. Appl. Phys. Lett., 92(12), 2008. [4] Thomas Kirchartz, Anke Helbig, Wilfried Reetz, Michael Reuter, Jürgen H. Werner, and

Advances in Cost-Efficient Thin-Film Photovoltaics Based on Cu(In,Ga)Se2

Institute of Scientific and Technical Information of China (English)

Michael Powalla; Stefan Paetel; Dimitrios Hariskos; Roland Wuerz; Friedrich Kessler; Peter Lechner; Wiltraud Wischmann; Theresa Magorian Friedlmeier

2017-01-01

In this article,we discuss the leading thin-film photovoltaic (PV) technology based on the Cu(In,Ga)Se2 (CIGS)compound semiconductor.This contribution includes a general comparison with the conventional Si-wafer-based PV technology and discusses the basics of the CIGS technology as well as advances in worldrecord-level conversion efficiency,production,applications,stability,and future developments with respect to a flexible product.Once in large-scale mass production,the CIGS technology has the highest potential of all PV technologies for cost-efficient clean energy generation.

Advances in Cost-Efficient Thin-Film Photovoltaics Based on Cu(In,GaSe2

Directory of Open Access Journals (Sweden)

Michael Powalla

2017-08-01

Full Text Available In this article, we discuss the leading thin-film photovoltaic (PV technology based on the Cu(In,GaSe2 (CIGS compound semiconductor. This contribution includes a general comparison with the conventional Si-wafer-based PV technology and discusses the basics of the CIGS technology as well as advances in world-record-level conversion efficiency, production, applications, stability, and future developments with respect to a flexible product. Once in large-scale mass production, the CIGS technology has the highest potential of all PV technologies for cost-efficient clean energy generation.

Fabrication of a Cu(InGaSe2 Thin Film Photovoltaic Absorber by Rapid Thermal Annealing of CuGa/In Precursors Coated with a Se Layer

Directory of Open Access Journals (Sweden)

Chun-Yao Hsu

2013-01-01

Full Text Available Cu(InGaSe2 (CIGS thin film absorbers are prepared using sputtering and selenization processes. The CuGa/In precursors are selenized during rapid thermal annealing (RTA, by the deposition of a Se layer on them. This work investigates the effect of the Cu content in precursors on the structural and electrical properties of the absorber. Using X-ray diffraction, field emission scanning electron microscopy, Raman spectroscopy, and Hall effect measurement, it is found that the CIGS thin films produced exhibit facetted grains and a single chalcopyrite phase with a preferred orientation along the (1 1 2 plane. A Cu-poor precursor with a Cu/( ratio of 0.75 demonstrates a higher resistance, due to an increase in the grain boundary scattering and a reduced carrier lifetime. A Cu-rich precursor with a Cu/( ratio of 1.15 exhibits an inappropriate second phase ( in the absorber. However, the precursor with a Cu/( ratio of 0.95 exhibits larger grains and lower resistance, which is suitable for its application to solar cells. The deposition of this precursor on Mo-coated soda lime glass substrate and further RTA causes the formation of a MoSe2 layer at the interface of the Mo and CIGS.

Monolayer MoS2 heterojunction solar cells

KAUST Repository

Tsai, Menglin

2014-08-26

We realized photovoltaic operation in large-scale MoS2 monolayers by the formation of a type-II heterojunction with p-Si. The MoS 2 monolayer introduces a built-in electric field near the interface between MoS2 and p-Si to help photogenerated carrier separation. Such a heterojunction photovoltaic device achieves a power conversion efficiency of 5.23%, which is the highest efficiency among all monolayer transition-metal dichalcogenide-based solar cells. The demonstrated results of monolayer MoS 2/Si-based solar cells hold the promise for integration of 2D materials with commercially available Si-based electronics in highly efficient devices. © 2014 American Chemical Society.

Photoelectrochemical solar cells based on Bi{sub 2}WO{sub 6}; Celdas solares fotoelectroquimicas basadas en Bi{sub 2}WO{sub 6}

Energy Technology Data Exchange (ETDEWEB)

Madriz, Lorean; Tata, Jose; Cuartas, Veronica; Cuellar, Alejandra; Vargas, Ronald, E-mail: lmadriz@usb.ve [Departamento de Quimica, Universidad Simon Bolivar, Caracas (Venezuela, Bolivarian Republic of)

2014-04-15

In this study, photoelectrochemical solar cells based on bismuth tungstate electrodes were evaluated. Bi{sub 2}WO{sub 6} was synthesized by a hydrothermal method and characterized by scanning electron microscopy, UV-Vis reflectance spectroscopy, and X-ray powder diffraction. For comparison, solar cells based on TiO{sub 2} semiconductor electrodes were evaluated. Photoelectrochemical response of Grätzel-type solar cells based on these semiconductors and their corresponding sensitization with two inexpensive phthalocyanines dyes were determined. Bi{sub 2}WO{sub 6}-based solar cells presented higher values of photocurrent and efficiency than those obtained with TiO{sub 2} electrodes, even without sensitization. These results portray solar cells based on Bi{sub 2}WO{sub 6} as promising devices for solar energy conversion owing to lower cost of production and ease of acquisition. (author)

W-doped TiO2 photoanode for high performance perovskite solar cell

International Nuclear Information System (INIS)

Liu, Jinwang; Zhang, Jing; Yue, Guoqiang; Lu, Xingwei; Hu, Ziyang; Zhu, Yuejin

2016-01-01

Titanium dioxide (TiO 2 ) with dispersed W-doping shows its capability for efficient electron collection from perovskite to TiO 2 in perovskite solar cell. The conduction band (CB) of TiO 2 moves downward (positive shift) with increasing the tungsten (W) content, which enlarges the energy gap between the CB of TiO 2 and the perovskite. Thus, the efficiency of electron injection from perovskite to TiO 2 is increased. Due to the increased electron injection, W-doped TiO 2 (≤0.2% W content) enhances the short-circuit photocurrent (J sc ) of perovskite solar cell and improves the performance of perovskite solar cell. Perovskite solar cell with 0.1% W-doped photoanode obtains the highest power conversion efficiency (η = 10.6%), which shows enhancement by 13% in J sc and by 17% in η, as compared with the undoped TiO 2 perovskite solar cell.

Copper (I) oxide (Cu 2 ) based solar cells - a review | Abdu | Bayero ...

African Journals Online (AJOL)

Copper (I) oxide (Cu2O) is a potential material for the fabrication of low cost solar cells for terrestrial application. A detailed survey on the previous work so far carried out on Cu2O based solar cells has been presented. The aspects discussed include the fabrication of Schottky (metal/semiconductor) barrier Cu2O solar cells, ...

Cu2O-based solar cells using oxide semiconductors

International Nuclear Information System (INIS)

Minami, Tadatsugu; Nishi, Yuki; Miyata, Toshihiro

2016-01-01

We describe significant improvements of the photovoltaic properties that were achieved in Al-doped ZnO (AZO)/n-type oxide semiconductor/p-type Cu 2 O heterojunction solar cells fabricated using p-type Cu 2 O sheets prepared by thermally oxidizing Cu sheets. The multicomponent oxide thin film used as the n-type semiconductor layer was prepared with various chemical compositions on non-intentionally heated Cu 2 O sheets under various deposition conditions using a pulsed laser deposition method. In Cu 2 O-based heterojunction solar cells fabricated using various ternary compounds as the n-type oxide thin-film layer, the best photovoltaic performance was obtained with an n-ZnGa 2 O 4 thin-film layer. In most of the Cu 2 O-based heterojunction solar cells using multicomponent oxides composed of combinations of various binary compounds, the obtained photovoltaic properties changed gradually as the chemical composition was varied. However, with the ZnO-MgO and Ga 2 O 3 -Al 2 O 3 systems, higher conversion efficiencies (η) as well as a high open circuit voltage (V oc ) were obtained by using a relatively small amount of MgO or Al 2 O 3 , e.g., (ZnO) 0.91 –(MgO) 0.09 and (Ga 2 O 3 ) 0.975 –(Al 2 O 3 ) 0.025 , respectively. When Cu 2 O-based heterojunction solar cells were fabricated using Al 2 O 3 –Ga 2 O 3 –MgO–ZnO (AGMZO) multicomponent oxide thin films deposited with metal atomic ratios of 10, 60, 10 and 20 at.% for the Al, Ga, Mg and Zn, respectively, a high V oc of 0.98 V and an η of 4.82% were obtained. In addition, an enhanced η and an improved fill factor could be achieved in AZO/n-type multicomponent oxide/p-type Cu 2 O heterojunction solar cells fabricated using Na-doped Cu 2 O (Cu 2 O:Na) sheets that featured a resistivity controlled by optimizing the post-annealing temperature and duration. Consequently, an η of 6.25% and a V oc of 0.84 V were obtained in a MgF 2 /AZO/n-(Ga 2 O 3 –Al 2 O 3 )/p-Cu 2 O:Na heterojunction solar cell fabricated using

Cu2O-based solar cells using oxide semiconductors

Science.gov (United States)

Minami, Tadatsugu; Nishi, Yuki; Miyata, Toshihiro

2016-01-01

We describe significant improvements of the photovoltaic properties that were achieved in Al-doped ZnO (AZO)/n-type oxide semiconductor/p-type Cu2O heterojunction solar cells fabricated using p-type Cu2O sheets prepared by thermally oxidizing Cu sheets. The multicomponent oxide thin film used as the n-type semiconductor layer was prepared with various chemical compositions on non-intentionally heated Cu2O sheets under various deposition conditions using a pulsed laser deposition method. In Cu2O-based heterojunction solar cells fabricated using various ternary compounds as the n-type oxide thin-film layer, the best photovoltaic performance was obtained with an n-ZnGa2O4 thin-film layer. In most of the Cu2O-based heterojunction solar cells using multicomponent oxides composed of combinations of various binary compounds, the obtained photovoltaic properties changed gradually as the chemical composition was varied. However, with the ZnO-MgO and Ga2O3-Al2O3 systems, higher conversion efficiencies (η) as well as a high open circuit voltage (Voc) were obtained by using a relatively small amount of MgO or Al2O3, e.g., (ZnO)0.91-(MgO)0.09 and (Ga2O3)0.975-(Al2O3)0.025, respectively. When Cu2O-based heterojunction solar cells were fabricated using Al2O3-Ga2O3-MgO-ZnO (AGMZO) multicomponent oxide thin films deposited with metal atomic ratios of 10, 60, 10 and 20 at.% for the Al, Ga, Mg and Zn, respectively, a high Voc of 0.98 V and an η of 4.82% were obtained. In addition, an enhanced η and an improved fill factor could be achieved in AZO/n-type multicomponent oxide/p-type Cu2O heterojunction solar cells fabricated using Na-doped Cu2O (Cu2O:Na) sheets that featured a resistivity controlled by optimizing the post-annealing temperature and duration. Consequently, an η of 6.25% and a Voc of 0.84 V were obtained in a MgF2/AZO/n-(Ga2O3-Al2O3)/p-Cu2O:Na heterojunction solar cell fabricated using a Cu2O:Na sheet with a resistivity of approximately 10 Ω·cm and a (Ga0.975Al0.025)2

Low-cost ZnO:Al transparent contact by reactive rotatable magnetron sputtering for Cu(In,Ga)Se2 solar modules

International Nuclear Information System (INIS)

Menner, R.; Hariskos, D.; Linss, V.; Powalla, M.

2011-01-01

Sputtering ZnO as transparent front contact (TCO) is standard in today's industrial scale Cu(In,Ga)Se 2 (CIGS) module manufacturing. Although innovative concepts like rotatable magnetron sputtering from ceramic targets have been realised, costs are still high due to expensive ceramic targets. Significant cost reductions are expected by using reactive sputtering of metallic targets. Therefore, ZSW and industrial partners investigated the reactive sputtering of Al-doped zinc oxide (ZAO) as TCO on CIGS absorbers of high quality and industrial relevance. The reactive DC sputtering from rotatable magnetron targets is controlled in the transition mode by adjusting oxygen flow and discharge voltage. Optimisation leads to ZAO films with a TCO quality nearly comparable to standard films deposited by DC ceramic sputtering. Scanning electron microscopy, X-ray diffraction, and Hall analyses of the ZAO films are performed. Medium-size CIGS modules are coated with reactively sputtered ZAO, resulting in 12.8% module efficiency and surpassing the efficiency of the ceramic witness device. Cd-free buffered devices are also successfully coated with reactive TCO. Damp heat stability according to IEC61646 is met by all reactively sputtered devices.

Quantum Dot Sensitized Solar Cells Based on TiO2/AgInS2

Science.gov (United States)

Pawar, Sachin A.; Jeong, Jae Pil; Patil, Dipali S.; More, Vivek M.; Lee, Rochelle S.; Shin, Jae Cheol; Choi, Won Jun

2018-05-01

Quantum dot heterojunctions with type-II band alignment can efficiently separate photogenerated electron-hole pairs and, hence, are useful for solar cell studies. In this study, a quantum dot sensitized solar cell (QDSSC) made of TiO2/AgInS2 is achieved to boost the photoconversion efficiency for the TiO2-based system by varying the AgInS2 layer's thickness. The TiO2 nanorods array film is prepared by using a simple hydrothermal technique. The formation of a AgInS2 QD-sensitized TiO2-nanorod photoelectrode is carried out by successive ionic layer adsorption and reaction (SILAR) technique. The effect of the QD layer on the performance of the solar cell is studied by varying the SILAR cycles of the QD coating. The synthesized electrode materials are characterized by using X-ray diffraction, X-ray photoelectron spectroscopy, field emission scanning electron microscopy, high resolution transmission electron microscopy and solar cell performances. The results indicate that the nanocrystals have effectively covered the outer surfaces of the TiO2 nanorods. The interfacial structure of quantum dots (QDs)/TiO2 is also investigated, and the growth interface is verified. A careful comparison between TiO2/AgInS2 sensitized cells reveals that the trasfer of electrons and hole proceeds efficiently, the recombination is suppressed for the optimum thickness of the QD layer and light from the entire visible spectrum is utilised. Under AM 1.5G illumination, a high photocurrent of 1.36 mAcm-2 with an improved power conversion efficiency of 0.48% is obtained. The solar cell properties of our photoanodes suggest that the TiO2 nanorod array films co-sensitized by AgInS2 nanoclusters have potential applications in solar cells.

Development of CIGS2 solar cells with lower absorber thickness

Energy Technology Data Exchange (ETDEWEB)

Vasekar, Parag S.; Dhere, Neelkanth G. [Florida Solar Energy Center, University of Central Florida, 1679 Clearlake Rd., Cocoa, FL 32922 (United States); Moutinho, Helio [National Renewable Energy Laboratory, 1617 Cole Blvd. Golden, CO 80401 (United States)

2009-09-15

The availability and cost of materials, especially of indium can be a limiting factor as chalcopyrite based thin-film solar cells advance in their commercialization. The required amounts of metals can be lowered by using thinner films. When the thickness of the film decreases, there is possibility of remaining only in the small grain region because the coalescence of grains does not have an opportunity to enhance the grain size to the maximum. Solar cell performance in smaller grain chalcopyrite absorber deteriorates due to larger fraction of grain boundaries. Efforts are being made to reduce the thickness while maintaining the comparable performance. This work presents a study of preparation, morphology and other material properties of CIGS2 absorber layers with decreasing thicknesses up to 1.2 {mu}m and its correlation with the device performance. Encouraging results were obtained demonstrating that reasonable solar cell efficiencies (>10%) can be achieved even for thinner CIGS2 thin-film solar cells. (author)

Development of CIGS2 thin film solar cells

International Nuclear Information System (INIS)

Dhere, Neelkanth G.; Gade, Vivek S.; Kadam, Ankur A.; Jahagirdar, Anant H.; Kulkarni, Sachin S.; Bet, Sachin M.

2005-01-01

Research and development of CuIn 1-x Ga x Se 2-y S y (CIGSS) thin-film solar cells on ultralightweight flexible metallic foil substrates is being carried out at FSEC PV Materials Lab for space applications. Earlier, the substrate size was limited to 3 cm x 2.5 cm. Large-area sputtering systems and scrubber for hydrogen selenide and sulfide have been designed and constructed for preparation of CIGSS thin-films on large (15 cm x 10 cm) substrates. A selenization/sulfurization furnace donated by Shell (formerly Siemens) Solar has also been refurbished and upgraded. The sputtering target assembly design was modified for proper clamping of targets and effective cooling. A new design of the magnetic assembly for large-area magnetron sputtering sources was implemented so as to achieve uniform deposition on large area. Lightweight stainless steel foil and ultralightweight titanium foil substrates were utilized to increase the specific power of solar cells. Sol-gel derived SiO 2 layers were coated on titanium foil by dip coating method. Deposition parameters for the preparation of molybdenum back contact layers were optimized so as to minimize the residual stress as well as reaction with H 2 S. Presently large (15 cm x 10 cm) CuIn 1-x Ga x S 2 (CIGS2) thin film solar cells are being prepared on Mo-coated titanium and stainless steel foil by sulfurization of CuGa/In metallic precursors in diluted Ar:H 2 S(4%). Heterojunction partner CdS layers are deposited by chemical bath deposition. The regeneration sequence of ZnO/ZnO:Al targets was optimized for obtaining consistently good-quality, transparent and conducting ZnO/ZnO:Al bilayer by RF magnetron-sputter deposition. Excellent facilities at FSEC PV Materials Lab are one of its kinds and could serve as a nucleus of a small pilot plant for CIGSS thin film solar cell fabrication

ZnO/TiO{sub 2} particles and their solar cell application

Energy Technology Data Exchange (ETDEWEB)

Kerli, S., E-mail: suleymankerli@ksu.edu.tr [Department of EnergySystemsEngineering, Faculty of Elbistan Technology, Kahramanmaras SutcuImamUniversity, Kahramanmaras (Turkey); Akgül, Ö., E-mail: omeraakgul@gmail.com [Kahramanmaras Sutcu Imam University, Dept. of Physics, 46100 K.Maras-Turkey (Turkey); Alver, Ü., E-mail: ualver@ktu.edu.tr [Karadeniz Technical University, Dept. of Metallurgical and Materials Eng. 61080, Trabzon-Turkey (Turkey)

2016-03-25

ZnO/TiO{sub 2} particles were investigated for dye-sensitized solar cells (DSSC). Nano-structured ZnO particles were produced by the hydrothermal method. TiO{sub 2} (P25) nanoparticles, was bought from the company of Degussa. Crystal structures and morphological properties of particles were examined by XRD and SEM. As an application, dye sensitized solar cells were fabricated from nano-structured produced metal oxide particles. The working electrodes of the DSSCs were obtained by mixture of ZnO and TiO{sub 2} powders. I-V characteristics of the cells were measured by using a solar simulator and the efficiency of the solar cells were obtained by using I-V graphs. ZnO cells sensitized with Ruthenium 535-bisTBA (N719) dyes yield higher efficiencies than corresponding TiO{sub 2} cells. By increasing TiO{sub 2} amount in the mixture of ZnO/TiO{sub 2}, it was observed that efficiencies of cells are getting lower.

Copper-indium-gallium-diselenide nanoparticles synthesized by a solvothermal method for solar cell application

Directory of Open Access Journals (Sweden)

Chiou Chuan-Sheng

2017-01-01

Full Text Available Chalcopyrite copper-indium-gallium-diselenide (CIGS nanoparticles are useful for photovoltaic applications. In this study, the synthesis of CIGS powder was examined, and the powder was successfully synthesized using a relatively simple and convenient elemental solvothermal route. From the reactions of elemental Cu, In, Se and Ga(NO33 powders in an autoclave with ethylenediamine as a solvent, spherical CIGS nanoparticles, with diameters ranging from 20-40 nm, were obtained using a temperature of 200°C for 36h. The structure, morphology, chemical composition and optical properties of the as-synthesized CIGS were characterized using X-ray diffraction, transmission electron microscopy, selected area electron diffraction, scanning electron microscopy, inductively coupled plasma-mass spectrometry. In this sample, the mole ratio of Cu:In:Ga:Se was equal to 0.89:0.71:0.29:2.01, and the optical band gap was found to be 1.18 eV. The solar cell obtained a power conversion efficiency of 5.62% under standard air mass 1.5 global illumination.

Compositional and electrical properties of line and planar defects in Cu(In,Ga)Se2 thin films for solar cells - a review

International Nuclear Information System (INIS)

Abou-Ras, Daniel; Schmidt, Sebastian S.; Schaefer, Norbert; Kavalakkatt, Jaison; Rissom, Thorsten; Unold, Thomas; Mainz, Roland; Weber, Alfons; Kirchartz, Thomas; Simsek Sanli, Ekin; Aken, Peter A. van; Ramasse, Quentin M.; Kleebe, Hans-Joachim; Azulay, Doron; Balberg, Isaac; Millo, Oded; Cojocaru-Miredin, Oana; Barragan-Yani, Daniel; Albe, Karsten; Haarstrich, Jakob; Ronning, Carsten

2016-01-01

The present review gives an overview of the various reports on properties of line and planar defects in Cu(In,Ga)(S,Se) 2 thin films for high-efficiency solar cells. We report results from various analysis techniques applied to characterize these defects at different length scales, which allow for drawing a consistent picture on structural and electronic defect properties. A key finding is atomic reconstruction detected at line and planar defects, which may be one mechanism to reduce excess charge densities and to relax deep-defect states from midgap to shallow energy levels. On the other hand, nonradiative Shockley-Read-Hall recombination is still enhanced with respect to defect-free grain interiors, which is correlated with substantial reduction of luminescence intensities. Comparison of the microscopic electrical properties of planar defects in Cu(In,Ga)(S,Se) 2 thin films with two-dimensional device simulations suggest that these defects are one origin of the reduced open-circuit voltage of the photovoltaic devices. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Solar excitation of CdS/Cu2S photovoltaic cells

Science.gov (United States)

Boer, K. W.

1976-01-01

Solar radiation of five typical clear weather days and under a variety of conditions is used to determine the spectral distribution of the photonflux at different planes of a CdS/Cu2S solar cell. The fractions of reflected and absorbed flux are determined at each of the relevant interfaces and active volume elements of the solar cell. The density of absorbed photons is given in respect to spectral and spatial distribution. The variance of the obtained distribution, with changes in insolation and absorption spectra of the active solar cell layers, is indicated. A catalog of typical examples is given in the appendix.

Reliable wet-chemical cleaning of natively oxidized high-efficiency Cu(In,Ga)Se2 thin-film solar cell absorbers

Science.gov (United States)

Lehmann, Jascha; Lehmann, Sebastian; Lauermann, Iver; Rissom, Thorsten; Kaufmann, Christian A.; Lux-Steiner, Martha Ch.; Bär, Marcus; Sadewasser, Sascha

2014-12-01

Currently, Cu-containing chalcopyrite-based solar cells provide the highest conversion efficiencies among all thin-film photovoltaic (PV) technologies. They have reached efficiency values above 20%, the same performance level as multi-crystalline silicon-wafer technology that dominates the commercial PV market. Chalcopyrite thin-film heterostructures consist of a layer stack with a variety of interfaces between different materials. It is the chalcopyrite/buffer region (forming the p-n junction), which is of crucial importance and therefore frequently investigated using surface and interface science tools, such as photoelectron spectroscopy and scanning probe microscopy. To ensure comparability and validity of the results, a general preparation guide for "realistic" surfaces of polycrystalline chalcopyrite thin films is highly desirable. We present results on wet-chemical cleaning procedures of polycrystalline Cu(In1-xGax)Se2 thin films with an average x = [Ga]/([In] + [Ga]) = 0.29, which were exposed to ambient conditions for different times. The hence natively oxidized sample surfaces were etched in KCN- or NH3-based aqueous solutions. By x-ray photoelectron spectroscopy, we find that the KCN treatment results in a chemical surface structure which is - apart from a slight change in surface composition - identical to a pristine as-received sample surface. Additionally, we discover a different oxidation behavior of In and Ga, in agreement with thermodynamic reference data, and we find indications for the segregation and removal of copper selenide surface phases from the polycrystalline material.

Biomimetic Approach to Solar Cells Based on TiO2 Nanotubes

National Research Council Canada - National Science Library

Allen, Jan L; Lee, Ivan C; Wolfenstine, Jeff

2008-01-01

The goal of this research was to explore the use of nanotube titanium dioxide (TiO2) as an electrode material in dye-sensitized solar cells in order to further the development of solar cell technology...

Potential-induced degradation of Cu(In,Ga)Se2 photovoltaic modules

Science.gov (United States)

Yamaguchi, Seira; Jonai, Sachiko; Hara, Kohjiro; Komaki, Hironori; Shimizu-Kamikawa, Yukiko; Shibata, Hajime; Niki, Shigeru; Kawakami, Yuji; Masuda, Atsushi

2015-08-01

Potential-induced degradation (PID) of Cu(In,Ga)Se2 (CIGS) photovoltaic (PV) modules fabricated from integrated submodules is investigated. PID tests were performed by applying a voltage of -1000 V to connected submodule interconnector ribbons at 85 °C. The normalized energy conversion efficiency of a standard module decreases to 0.2 after the PID test for 14 days. This reveals that CIGS modules suffer PID under this experimental condition. In contrast, a module with non-alkali glass shows no degradation, which implies that the degradation occurs owing to alkali metal ions, e.g., Na+, migrating from the cover glass. The results of dynamic secondary ion mass spectrometry show Na accumulation in the n-ZnO transparent conductive oxide layer of the degraded module. A CIGS PV module with an ionomer (IO) encapsulant instead of a copolymer of ethylene and vinyl acetate shows no degradation. This reveals that the IO encapsulant can prevent PID of CIGS modules. A degraded module can recover from its performance losses by applying +1000 V to connected submodule interconnector ribbons from an Al plate placed on the test module.

Influence of the grid and cell design on the power output of thin film Cu(InGa)Se2 cells

NARCIS (Netherlands)

Deelen, J. van; Frijters, C.; Suijlen, M.; Barink, M.

2015-01-01

The effect of the front contact characteristics on the working of monolithically integrated thin film solar panels and effective ways of improving the front contact are discussed. Efficiencies were calculated for various cell lengths and scribing areas in between cells (interconnection dead zone

Thin film solar cells from earth abundant materials growth and characterization of Cu2(ZnSn)(SSe)4 thin films and their solar cells

CERN Document Server

Kodigala, Subba Ramaiah

2013-01-01

The fundamental concept of the book is to explain how to make thin film solar cells from the abundant solar energy materials by low cost. The proper and optimized growth conditions are very essential while sandwiching thin films to make solar cell otherwise secondary phases play a role to undermine the working function of solar cells. The book illustrates growth and characterization of Cu2ZnSn(S1-xSex)4 thin film absorbers and their solar cells. The fabrication process of absorber layers by either vacuum or non-vacuum process is readily elaborated in the book, which helps for further developm

Titanium Dioxide (TiO2) Dye-Sensitized Solar Cells

Science.gov (United States)

Alseadi, Anwar Abdulaziz

With the increasing global energy consumption and diminishing fossil fuels, various renewable and sustainable energies have been harvested in past decades and related devices have been fabricated. Dye-sensitized solar cells (DSSCs) are the most efficient third-generation solar cells to harvest solar energy into electricity directly. Titanium dioxide (TiO2) based DSSCs were invented in 1988 and have attracted more and more attention since then because of low-cost and high efficiency. TiO2 nanoparticles are one kind of popular anode materials of DSSC because of stability, abundance, environment safety, non-toxicity, and excellent photovoltaic properties. In the project, TiO2 nanoparticles with different crystallographic sizes were produced by ball-milling. Physical properties of the produced TiO 2 nanoparticles were characterized by X-ray powder diffraction, UV-visible spectroscopy, and Raman scattering. TiO2-based DSSCs were fabricated and their photovoltaic performances were tested. The effects of TiO2 layer thickness, crystallographic size, and microsphere fillings were investigated. The project enriched our understanding of TiO2-based DSSCs.

Industrialisation of polymer solar cells. Phase 2: Consolidation

Energy Technology Data Exchange (ETDEWEB)

Lauritzen, H.; Gevorgyan, S.; Frausig, J.; Andersen, Rasmus B.; Krebs, F.C.

2013-03-15

The key results from the project are: a firmly anchoring of DTU's basic polymer solar cell technology, ProcessOne, at Mekoprint, improved documented operational lifetime for polymer solar modules, and optimized processing of such modules. Mekoprint has worked determinedly to stabilize their production of ProcessOne devices, to prepare for full scale production and to build a marked for polymer solar cells. Work has been invested in improvement of process tolerances, documentation of the production process, training of process operators and roll-to-roll characterization of the produced solar cells. The planned and conducted actions have been summed up in a SIPOC diagram. Mekoprint's communication with potential customers reveals that lowering the cost, increasing the efficiency and operational life time is important for reaching the commercial market. Activities aimed at penetrating the market for lighting products in 3{sup rd} world countries are intensified. A new solar cell laser pointer is developed and a series of 2000 has been produced for the purpose of creating a commercial focus on polymer solar cells. DTU has established a characterization laboratory for organic photovoltaics (CLOP). The laboratory allows for real-time - and accelerated lifetime testing of solar cells both indoor and outdoor, and thus for the development of reliable methods for predicting life-time from accelerated testing. An operational lifetime of 2 years has, by means of the method, been documented for polymer solar modules encapsulated in a food-packaging barrier. Preliminary accelerated measurements on an equivalent device encapsulated in the same barrier, but in two layers, show a five times improvement of the solar cell stability. On basis of this it is considered that five years operational lifetime is within reach. DTU has improved of their OPV production technology by replacing the purchased vacuum-processed indium-tin-oxide (ITO) electrode by a roll-to-roll processed

Industrialisation of polymer solar cells. Phase 2: Consolidation

Energy Technology Data Exchange (ETDEWEB)

Lauritzen, H.; Gevorgyan, S.; Frausig, J.; Andersen, Rasmus B.; Krebs, F. C.

2013-03-15

The key results from the project are: a firmly anchoring of DTU's basic polymer solar cell technology, ProcessOne, at Mekoprint, improved documented operational lifetime for polymer solar modules, and optimized processing of such modules. Mekoprint has worked determinedly to stabilize their production of ProcessOne devices, to prepare for full scale production and to build a marked for polymer solar cells. Work has been invested in improvement of process tolerances, documentation of the production process, training of process operators and roll-to-roll characterization of the produced solar cells. The planned and conducted actions have been summed up in a SIPOC diagram. Mekoprint's communication with potential customers reveals that lowering the cost, increasing the efficiency and operational life time is important for reaching the commercial market. Activities aimed at penetrating the market for lighting products in 3{sup rd} world countries are intensified. A new solar cell laser pointer is developed and a series of 2000 has been produced for the purpose of creating a commercial focus on polymer solar cells. DTU has established a characterization laboratory for organic photovoltaics (CLOP). The laboratory allows for real-time - and accelerated lifetime testing of solar cells both indoor and outdoor, and thus for the development of reliable methods for predicting life-time from accelerated testing. An operational lifetime of 2 years has, by means of the method, been documented for polymer solar modules encapsulated in a food-packaging barrier. Preliminary accelerated measurements on an equivalent device encapsulated in the same barrier, but in two layers, show a five times improvement of the solar cell stability. On basis of this it is considered that five years operational lifetime is within reach. DTU has improved of their OPV production technology by replacing the purchased vacuum-processed indium-tin-oxide (ITO) electrode by a roll-to-roll processed electrode

Sb2S3 surface modification induced remarkable enhancement of TiO2 core/shell nanowries solar cells

International Nuclear Information System (INIS)

Meng, Xiuqing; Wang, Xiaozhou; Zhong, Mianzeng; Wu, Fengmin; Fang, Yunzhang

2013-01-01

This study presents the fabrication of a novel dye-sensitized solar cell with Sb 2 S 3 -modified TiO 2 nanowire (NW) arrays/TiO 2 nanoparticles (NP) (TiO 2(NWs) /TiO 2(NPs) /Sb 2 S 3 ) as the anodes and N719 dye as the sensitizer. A solar conversion efficiency of 4.91% at 1 sun illumination was achieved for the composite cell, which is markedly higher than the efficiency rates obtained using TiO 2 and TiO 2(NWs) /Sb 2 S 3 /TiO 2(NPs) NW cells, calculated at 2.36% and 3.11%, respectively. The improved efficiency results from the large surface area of the NPs, as well as the expansion of the light absorption region and high absorption coefficient by Sb 2 S 3 surface modification. - Graphical abstract: A novel TiO 2(NWs) /TiO 2(NPs) /Sb 2 S 3 dye sensitized solar cells (DSSCs) is fabricated, a solar conversion efficiency of 4.91 % at 1 sun illumination is achieved. Highlights: ► We fabricate sandwich structured TiO 2 dye-sensitized solar cells. ► The anode of the solar cells consist of Sb 2 S 3 modified TiO 2 nanowire arrays/TiO 2 nanopartices. ► A solar conversion efficiency of 4.91% at 1 sun illumination is achieved. ► The high efficiency results from large surface area and expanded light adsorption of the anode

Enhanced photovoltaic performance of Sb2S3-sensitized solar cells through surface treatments

Science.gov (United States)

Ye, Qing; Xu, Yafeng; Chen, Wenyong; Yang, Shangfeng; Zhu, Jun; Weng, Jian

2018-05-01

Efficient antimony sulfide (Sb2S3)-sensitized solar cells were obtained by a sequential treatment with thioacetamide (TA) and 1-decylphosphonic acid (DPA). Compared with the untreated Sb2S3-sensitized solar cells, the power conversion efficiency of the treated Sb2S3 solar cells was improved by 1.80% to 3.23%. The TA treatment improved the Sb2S3 films by reducing impurities and decreasing the film's surface defects, which inhibited the emergence of recombination centers. The DPA treatment reduced the recombination between hole transport materials (HTMs) and the Sb2S3. Therefore, we have presented an efficient strategy to improve the performance of Sb2S3-sensitized solar cells.

Polycrystalline thin-film TiO2/Se solar cells

Energy Technology Data Exchange (ETDEWEB)

Nakada, T; Kunioka, A

1985-07-01

A new type of selenium solar cell with a titanium dioxide (TiO2)/Se heterojunction has been fabricated by low-cost process.An efficiency of 5.01 percent under AM 1.5 illumination (100 mW/sq cm) has been achieved without antireflection coatings. The corresponding short-circuit current density, open-circuit voltage, and fill factor are 10.8 mA/sq cm, 0.884 V, and 0.525, respectively.The efficiency is the highest among Se-based solar cells reported to date. These cells also have extremely high spectral response at short wavelengths, resulting in efficiencies of 11-13 percent under fluorescent light (500 lux). 10 references.

Dye Sensitized Solar Cell, DSSC

Directory of Open Access Journals (Sweden)

Pongsatorn Amornpitoksuk

2003-07-01

Full Text Available A dye sensitized solar cell is a new type of solar cell. The operating system of this solar cell type is similar to plant’s photosynthesis process. The sensitizer is available for absorption light and transfer electrons to nanocrystalline metal oxide semiconductor. The ruthenium(II complexes with polypyridyl ligands are usually used as the sensitizers in solar cell. At the present time, the complex of [Ru(2,2',2'’-(COOH3- terpy(NCS3] is the most efficient sensitizer. The total photon to current conversion efficiency was approximately 10% at AM = 1.5.

Tackling Energy Loss for High-Efficiency Organic Solar Cells with Integrated Multiple Strategies.

Science.gov (United States)

Zuo, Lijian; Shi, Xueliang; Jo, Sae Byeok; Liu, Yun; Lin, Fracis; Jen, Alex K-Y

2018-04-01

Limited by the various inherent energy losses from multiple channels, organic solar cells show inferior device performance compared to traditional inorganic photovoltaic techniques, such as silicon and CuInGaSe. To alleviate these fundamental limitations, an integrated multiple strategy is implemented including molecular design, interfacial engineering, optical manipulation, and tandem device construction into one cell. Considering the close correlation among these loss channels, a sophisticated quantification of energy-loss reduction is tracked along with each strategy in a perspective to reach rational overall optimum. A novel nonfullerene acceptor, 6TBA, is synthesized to resolve the thermalization and V OC loss, and another small bandgap nonfullerene acceptor, 4TIC, is used in the back sub-cell to alleviate transmission loss. Tandem architecture design significantly reduces the light absorption loss, and compensates carrier dynamics and thermalization loss. Interfacial engineering further reduces energy loss from carrier dynamics in the tandem architecture. As a result of this concerted effort, a very high power conversion efficiency (13.20%) is obtained. A detailed quantitative analysis on the energy losses confirms that the improved device performance stems from these multiple strategies. The results provide a rational way to explore the ultimate device performance through molecular design and device engineering. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Al2 O3 Underlayer Prepared by Atomic Layer Deposition for Efficient Perovskite Solar Cells.

Science.gov (United States)

Zhang, Jinbao; Hultqvist, Adam; Zhang, Tian; Jiang, Liangcong; Ruan, Changqing; Yang, Li; Cheng, Yibing; Edoff, Marika; Johansson, Erik M J

2017-10-09

Perovskite solar cells, as an emergent technology for solar energy conversion, have attracted much attention in the solar cell community by demonstrating impressive enhancement in power conversion efficiencies. However, the high temperature and manually processed TiO 2 underlayer prepared by spray pyrolysis significantly limit the large-scale application and device reproducibility of perovskite solar cells. In this study, lowtemperature atomic layer deposition (ALD) is used to prepare a compact Al 2 O 3 underlayer for perovskite solar cells. The thickness of the Al 2 O 3 layer can be controlled well by adjusting the deposition cycles during the ALD process. An optimal Al 2 O 3 layer effectively blocks electron recombination at the perovskite/fluorine-doped tin oxide interface and sufficiently transports electrons through tunneling. Perovskite solar cells fabricated with an Al 2 O 3 layer demonstrated a highest efficiency of 16.2 % for the sample with 50 ALD cycles (ca. 5 nm), which is a significant improvement over underlayer-free PSCs, which have a maximum efficiency of 11.0 %. Detailed characterization confirms that the thickness of the Al 2 O 3 underlayer significantly influences the charge transfer resistance and electron recombination processes in the devices. Furthermore, this work shows the feasibility of using a high band-gap semiconductor such as Al 2 O 3 as the underlayer in perovskite solar cells and opens up pathways to use ALD Al 2 O 3 underlayers for flexible solar cells. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

TiO2-photoanode-assisted direct solar energy harvesting and storage in a solar-powered redox cell using halides as active materials.

Science.gov (United States)

Zhang, Shun; Chen, Chen; Zhou, Yangen; Qian, Yumin; Ye, Jing; Xiong, Shiyun; Zhao, Yu; Zhang, Xiaohong

2018-06-19

The rapid deployment of renewable energy is resulting in significant energy security, climate change mitigation, and economic benefits. We demonstrate here the direct solar energy harvesting and storage in a rechargeable solar-powered redox cell, which can be charged solely by solar irradiation. The cell follows a conventional redox-flow cell design with one integrated TiO2 photoanode in the cathode side. Direct charging the cell by solar irradiation results in the conversion of solar energy in to chemical energy. While discharging the cell leads to the release of chemical energy in the form of electricity. The cell integrates energy conversion and storage processes in a single device, making the solar energy directly and efficiently dispatchable. When using redox couples of Br2/Br- and I3-/I- in the cathode side and anode side, respectively, the cell can be directly charged upon solar irradiation, yielding a discharge potential of 0.5V with good round-trip efficiencies. This design is expected to be a potential alternative towards the development of affordable, inexhaustible and clean solar energy technologies.

Solution-Processed hybrid Sb2 S3 planar heterojunction solar cell

Science.gov (United States)

Huang, Wenxiao; Borazan, Ismail; Carroll, David

Thin-film solar cells based on inorganic absorbers permit a high efficiency and stability. Among or those absorber candidates, recently Sb2S3 has attracted extensive attention because of its suitable band gap (1.5eV ~1.7 eV) , strong optical absorption, low-cost and earth-abundant constituents. Currently high-efficiency Sb2S3 solar cells have absorber layer deposited on nanostructured TiO2 electrodes in combination with organic hole transport material (HTM) on top. However it's challenging to fill the nanostructured TiO2 layer with Sb2S3 and subsequently by HTM, this leads to uncovered surface permits charge recombination. And the existing of Sb2S3/TiO2/HTM triple interface will enhance the recombination due to the surface trap state. Therefore, a planar junction cell would not only have simpler structure with less steps to fabricate but also ideally also have a higher open circuit voltage because of less interface carrier recombination. By far there is limited research focusing on planar Sb2S3 solar cell, so the feasibility is still unclear. Here, we developed a low-toxic solution method to fabricate Sb2S3 thin film solar cell, then we studied the morphology of the Sb2S3 layer and its impact to the device performance. The best device with a structure of FTO/TiO2/Sb2S3/P3HT/Ag has PCE over 5% which is similar or higher than yet the best nanostructure devices with the same HTM. Furthermore, based on solution engineering and surface modification, we improved the Sb2S3 film quality and achieved a record PCE. .

Facile Growth of Cu2ZnSnS4 Thin-Film by One-Step Pulsed Hybrid Electrophoretic and Electroplating Deposition

Science.gov (United States)

Tsai, Hung-Wei; Chen, Chia-Wei; Thomas, Stuart R.; Hsu, Cheng-Hung; Tsai, Wen-Chi; Chen, Yu-Ze; Wang, Yi-Chung; Wang, Zhiming M.; Hong, Hwen-Fen; Chueh, Yu-Lun

2016-01-01

The use of costly and rare metals such as indium and gallium in Cu(In,Ga)Se2 (CIGS) based solar cells has motivated research into the use of Cu2ZnSnS4 (CZTS) as a suitable replacement due to its non-toxicity, abundance of compositional elements and excellent optical properties (1.5 eV direct band gap and absorption coefficient of ~104 cm−1). In this study, we demonstrate a one-step pulsed hybrid electrodeposition method (PHED), which combines electrophoretic and electroplating deposition to deposit uniform CZTS thin-films. Through careful analysis and optimization, we are able to demonstrate CZTS solar cells with the VOC, JSC, FF and η of 350 mV, 3.90 mA/cm2, 0.43 and 0.59%, respectively. PMID:26902556

Influence of Cu(In,Ga)(Se,S)2 surface treatments on the properties of 30 × 30 cm2 large area modules with atomic layer deposited Zn(O,S) buffers

International Nuclear Information System (INIS)

Merdes, S.; Steigert, A.; Ziem, F.; Lauermann, I.; Klenk, R.; Hergert, F.; Kaufmann, C.A.; Schlatmann, R.

2015-01-01

We report the effect of Cu(In,Ga)(Se,S) 2 absorber surface treatments on the properties of atomic layer deposited-Zn(O,S) buffered 30 × 30 cm 2 large area modules. The absorber is prepared by the sequential process. H 2 O and KCN solution treatments are investigated. The absorber surface treatment is found to influence significantly the open circuit voltage and the fill factor of the full modules. Light soaking related metastabilities are also found to depend on the type of treatment. While both H 2 O and KCN treatments are efficient at removing Se-oxides and Na 2 HCO 3 , the KCN treatment is found to remove additionally Ga-oxides and elemental Se that are detected on the surface of the absorber. A 30 × 30 cm 2 module aperture efficiency up to 12.3% could be achieved with KCN surface treatment of the absorber. - Highlights: • The Cu(In,Ga)(Se,S) 2 surface influences the Zn(O,S)-buffered module performance. • Surface treatment by H 2 O efficiently removes Se-oxides and sodium compounds. • KCN treatment of the absorber removes Se-oxides, Ga-oxides and elemental Se. • The devices' light soaking behavior depends on the absorber's surface chemistry. • A 30 × 30 cm 2 module efficiency of 12.3% is achieved with KCN treatment

Parameters optimization of CIGS solar cell using 2D physical modeling

Directory of Open Access Journals (Sweden)

Samar Dabbabi

Full Text Available In this study, the CIGS thin film solar cell has been investigated using the two-dimensional device simulator Silvaco-Atlas. Thickness and carrier concentration effects of the cell structure were studied to optimize the solar cell performances. Our results revealed high efficiency for a cell structure of 0.15 µm ZnO:Al, 0.06 µm i-ZnO, 0.04 µm CdS and 3 µm CIGS. The carrier concentration effects of the different layers were also studied revealing a better performance for CIGS doping concentration of 1018 cm−3. The optimized CIGS solar cell characteristics were a current density of short circuit Jsc = 38.75 mA/cm2, an open-circuit voltage V0C = 804.03 mV, a fill factor FF = 74.48% and an efficiency η = 23.20%. This result is in good agreement with experimental efficiencies found in literature. Keywords: CIGS solar cell, Electrical characteristics, Silvaco-Atlas software

Technology of solar cells of CuInSe-2

International Nuclear Information System (INIS)

Gordillo, Gerardo; Rodriguez, Jairo A

1993-01-01

The energetic problem in the World is at the present time one of the topics of more interest; for that reason the study of the transformation of the solar energy in electric power, using photovoltaic devices, it is a field of great priority in the investigation. The direct conversion of the solar energy in electric power, using solar cells, it represents an interesting alternative to replace a fraction of the energy deficit that will present as consequence of the limited reservations of hydrocarbons. At the present time they are had in experimentation plants lots of megawatts based on cells of silicon mono-crystalline. The solar cell technologically more developed it is that of silicon mono-crystalline; however their production cost is too high and difficultly it could compete economically with the traditional forms of generating energy; for this reason they are becoming big efforts and economic investments to develop solar cells of high efficiency and stability with base in thin movies whose production costs are much lower compared with those of cells of crystalline silicon

Non-Toxic Buffer Layers in Flexible Cu(In,GaSe2 Photovoltaic Cell Applications with Optimized Absorber Thickness

Directory of Open Access Journals (Sweden)

Md. Asaduzzaman

2017-01-01

Full Text Available Absorber layer thickness gradient in Cu(In1−xGaxSe2 (CIGS based solar cells and several substitutes for typical cadmium sulfide (CdS buffer layers, such as ZnS, ZnO, ZnS(O,OH, Zn1−xSnxOy (ZTO, ZnSe, and In2S3, have been analyzed by a device emulation program and tool (ADEPT 2.1 to determine optimum efficiency. As a reference type, the CIGS cell with CdS buffer provides a theoretical efficiency of 23.23% when the optimum absorber layer thickness was determined as 1.6 μm. It is also observed that this highly efficient CIGS cell would have an absorber layer thickness between 1 μm and 2 μm whereas the optimum buffer layer thickness would be within the range of 0.04–0.06 μm. Among all the cells with various buffer layers, the best energy conversion efficiency of 24.62% has been achieved for the ZnO buffer layer based cell. The simulation results with ZnS and ZnO based buffer layer materials instead of using CdS indicate that the cell performance would be better than that of the CdS buffer layer based cell. Although the cells with ZnS(O,OH, ZTO, ZnSe, and In2S3 buffer layers provide slightly lower efficiencies than that of the CdS buffer based cell, the use of these materials would not be deleterious for the environment because of their non-carcinogenic and non-toxic nature.

Design and realization of transparent solar modules based on luminescent solar concentrators integrating nanostructured photonic crystals.

Science.gov (United States)

Jiménez-Solano, Alberto; Delgado-Sánchez, José-Maria; Calvo, Mauricio E; Miranda-Muñoz, José M; Lozano, Gabriel; Sancho, Diego; Sánchez-Cortezón, Emilio; Míguez, Hernán

2015-12-01

Herein, we present a prototype of a photovoltaic module that combines a luminescent solar concentrator integrating one-dimensional photonic crystals and in-plane CuInGaSe 2 (CIGS) solar cells. Highly uniform and wide-area nanostructured multilayers with photonic crystal properties were deposited by a cost-efficient and scalable liquid processing amenable to large-scale fabrication. Their role is to both maximize light absorption in the targeted spectral range, determined by the fluorophore employed, and minimize losses caused by emission at angles within the escape cone of the planar concentrator. From a structural perspective, the porous nature of the layers facilitates the integration with the thermoplastic polymers typically used to encapsulate and seal these modules. Judicious design of the module geometry, as well as of the optical properties of the dielectric mirrors employed, allows optimizing light guiding and hence photovoltaic performance while preserving a great deal of transparency. Optimized in-plane designs like the one herein proposed are of relevance for building integrated photovoltaics, as ease of fabrication, long-term stability and improved performance are simultaneously achieved. © 2015 The Authors. Progress in Photovoltaics: Research and Applications published by John Wiley & Sons Ltd.

Design and realization of transparent solar modules based on luminescent solar concentrators integrating nanostructured photonic crystals

Science.gov (United States)

Jiménez‐Solano, Alberto; Delgado‐Sánchez, José‐Maria; Calvo, Mauricio E.; Miranda‐Muñoz, José M.; Lozano, Gabriel; Sancho, Diego; Sánchez‐Cortezón, Emilio

2015-01-01

Abstract Herein, we present a prototype of a photovoltaic module that combines a luminescent solar concentrator integrating one‐dimensional photonic crystals and in‐plane CuInGaSe2 (CIGS) solar cells. Highly uniform and wide‐area nanostructured multilayers with photonic crystal properties were deposited by a cost‐efficient and scalable liquid processing amenable to large‐scale fabrication. Their role is to both maximize light absorption in the targeted spectral range, determined by the fluorophore employed, and minimize losses caused by emission at angles within the escape cone of the planar concentrator. From a structural perspective, the porous nature of the layers facilitates the integration with the thermoplastic polymers typically used to encapsulate and seal these modules. Judicious design of the module geometry, as well as of the optical properties of the dielectric mirrors employed, allows optimizing light guiding and hence photovoltaic performance while preserving a great deal of transparency. Optimized in‐plane designs like the one herein proposed are of relevance for building integrated photovoltaics, as ease of fabrication, long‐term stability and improved performance are simultaneously achieved. © 2015 The Authors. Progress in Photovoltaics: Research and Applications published by John Wiley & Sons Ltd. PMID:27656090

Ultrathin Cu2O as an efficient inorganic hole transporting material for perovskite solar cells

KAUST Repository

Yu, Weili

2016-02-18

We demonstrate that ultrathin P-type Cu2O thin films fabricated by a facile thermal oxidation method can serve as a promising hole-transporting material in perovskite solar cells. Following a two-step method, inorganic-organic hybrid perovskite solar cells were fabricated and a power conversion efficiency of 11.0% was achieved. We find that the thickness and properties of Cu2O layers must be precisely tuned in order to achieve the optimal solar cell performance. The good performance of such perovskite solar cells can be attributed to the unique properties of ultrathin Cu2O, including high hole mobility, good energy level alignment with CH3NH3PbI3, and longer lifetime of photo-excited carriers. Combining merits of low cost, facile synthesis, and high device performance, ultrathin Cu2O films fabricated via thermal oxidation hold promise for facilitating the developments of industrial-scale perovskite solar cells.

Parameters optimization of CIGS solar cell using 2D physical modeling

Science.gov (United States)

Dabbabi, Samar; Nasr, Tarek Ben; Kamoun-Turki, Najoua

In this study, the CIGS thin film solar cell has been investigated using the two-dimensional device simulator Silvaco-Atlas. Thickness and carrier concentration effects of the cell structure were studied to optimize the solar cell performances. Our results revealed high efficiency for a cell structure of 0.15 μm ZnO:Al, 0.06 μm i-ZnO, 0.04 μm CdS and 3 μm CIGS. The carrier concentration effects of the different layers were also studied revealing a better performance for CIGS doping concentration of 1018 cm-3. The optimized CIGS solar cell characteristics were a current density of short circuit Jsc = 38.75 mA/cm2, an open-circuit voltage V0C = 804.03 mV, a fill factor FF = 74.48% and an efficiency η = 23.20%. This result is in good agreement with experimental efficiencies found in literature.

Structural study and electronic band structure investigations of the solid solution Na xCu1-xIn5S8 and its impact on the Cu(In,Ga)Se2/In2S3 interface of solar cells

International Nuclear Information System (INIS)

Lafond, A.; Guillot-Deudon, C.; Harel, S.; Mokrani, A.; Barreau, N.; Gall, S.; Kessler, J.

2007-01-01

The present work reports investigations on the new In 2 S 3 containing Cu and/or Na compounds, which are expected to be formed at the Cu(In,Ga)Se 2 /In 2 S 3 interface. The knowledge of these materials properties is very important in order to better understand the operation of the devices based on these junction partners. It has been observed that a solid solution Na x Cu 1-x In 5 S 8 exists from CuIn 5 S 8 (x = 0) to NaIn 5 S 8 (x = 1) with a spinel-like structure. The single crystal structure determination shows that indium, copper and sodium atoms are statistically distributed on the tetrahedral sites. XPS investigations on the CuIn 5 S 8 , Na 0.5 Cu 0.5 In 5 S 8 and NaIn 5 S 8 compounds combined with the band gap changes reported in a previous work show that these variations are mainly due to valence band maximum shift; it is moved downward when x increases from 0 to 1. These observations are confirmed by the electron structure calculations based on the density functional theory, which additionally demonstrate that the pure sodium compound has direct gap whereas the copper-containing compounds have indirect gaps

The CdS/Cu2S solar cell. 2

International Nuclear Information System (INIS)

Boeer, K.W.

1981-01-01

The present state of the art in theory and experimental knowledge of the operation of CdS/Cu 2 S solar cells is reviewed. The subject is covered under the following headings: (1) voltage drop across the cell, (2) Boltzmann solution near the open circuit voltage, (3) boundary condition at the junction-emitter interface, (4) current-voltage characteristics, (5) multiple donors (traps) in the junction, (6) space charge and field limitation caused by field quenching, (7) tunneling under reverse bias, (8) current-dependent interface electron density and interface recombination, (9) kinetics of the characteristics, (10) relevant experimental results, (11) deduction of junction parameters from j-U characteristics, and (12) junction-emitter interface. 37 references are included

Barrier effect of AlN film in flexible Cu(In,Ga)Se{sub 2} solar cells on stainless steel foil and solar cell

Energy Technology Data Exchange (ETDEWEB)

Li, Boyan; Li, Jianjun [Institute of Photo-electronic Thin Film Devices and Technology, Key Laboratory of Photo-electronic Thin Film Devices and Technology of Tianjin, Nankai University, Tianjin 300071 (China); Wu, Li [The MOE Key Laboratory of Weak-Light Nonlinear Photonics, School of Physics, Nankai University, Tianjin 300071 (China); Liu, Wei; Sun, Yun [Institute of Photo-electronic Thin Film Devices and Technology, Key Laboratory of Photo-electronic Thin Film Devices and Technology of Tianjin, Nankai University, Tianjin 300071 (China); Zhang, Yi, E-mail: yizhang@nankai.edu.cn [Institute of Photo-electronic Thin Film Devices and Technology, Key Laboratory of Photo-electronic Thin Film Devices and Technology of Tianjin, Nankai University, Tianjin 300071 (China)

2015-04-05

Highlights: • The adhension between AlN film and Mo are verygood. • AlN film can be effectively used as the barrier of flexible CIGS solar cell on SS substrate. • AlN film is suitable as the insulation barrier of flexible CIGS solar cell on SS substrate. - Abstract: The AlN film deposited by DC magnetron sputtering on stainless steel (SS) foils was used as the barrier in flexible Cu(In,Ga)Se{sub 2} (CIGS) solar cells on stainless steel foil and characterized comprehensively by X-ray diffraction (XRD), scanning electron microscopy (SEM), I–V, and QE measurements study. The study of AlN as insulation barrier in the flexible CIGS solar cell showed that the adhesion strength between the SS foil and the deposited AlN film was very strong even after annealing at high temperature at 530 °C. More importantly, a high resistance of over 10 MΩ was remained with the film with thickness of around 200 nm after annealing. This indicates that the AlN film is suitable as an effective insulation barrier in flexible CIGS solar cells based on SS foil. In addition, the XRD and SEM results showed that the AlN film did not influence the crystal structure of the Mo film which was deposited upon the AlN layer and used as the electrical contact in CIGS solar cells. It was found that the AlN film contributed to an improved crystallinity of the Mo contact layer compared to the bare SS foil. The combined results of secondary ion mass spectrometry, I–V and EQE measurements of the corresponding flexible CIGS solar cells confirmed that 1 μm-thick AlN film could be used as an efficient barrier layer in CIGS solar cells on SS foil.

One-Year stable perovskite solar cells by 2D/3D interface engineering

Science.gov (United States)

Grancini, G.; Roldán-Carmona, C.; Zimmermann, I.; Mosconi, E.; Lee, X.; Martineau, D.; Narbey, S.; Oswald, F.; de Angelis, F.; Graetzel, M.; Nazeeruddin, Mohammad Khaja

2017-06-01

Despite the impressive photovoltaic performances with power conversion efficiency beyond 22%, perovskite solar cells are poorly stable under operation, failing by far the market requirements. Various technological approaches have been proposed to overcome the instability problem, which, while delivering appreciable incremental improvements, are still far from a market-proof solution. Here we show one-year stable perovskite devices by engineering an ultra-stable 2D/3D (HOOC(CH2)4NH3)2PbI4/CH3NH3PbI3 perovskite junction. The 2D/3D forms an exceptional gradually-organized multi-dimensional interface that yields up to 12.9% efficiency in a carbon-based architecture, and 14.6% in standard mesoporous solar cells. To demonstrate the up-scale potential of our technology, we fabricate 10 × 10 cm2 solar modules by a fully printable industrial-scale process, delivering 11.2% efficiency stable for >10,000 h with zero loss in performances measured under controlled standard conditions. This innovative stable and low-cost architecture will enable the timely commercialization of perovskite solar cells.

Solar energy utilization by solar cells and superblack absorbers

Energy Technology Data Exchange (ETDEWEB)

Bonnet, D; Selders, M

1975-10-31

A review is presented of the physical principles responsible for the characteristics of solar cells, with particular reference to Si homojunction and CdS--Cu/sub 2/S thin film devices. Electric power generation from solar cells still appears uncompetitive economically except in special circumstances, but heating from solar energy using selective absorbers with low reemission is more promising.

Characterization of multicrystalline solar cells

International Nuclear Information System (INIS)

Malik, A.Q.; Chong Chew Hah; Chan Siang Khwang; Tan Kha Sheng; Lim Chee Ming

2006-01-01

The evaluation and assessment of the performance of photovoltaic (PV) cells in terms of measurable parameters requires the measurement of the current as a function of voltage, temperature, intensity, wind speed and spectrum. Most noticeable of all these parameters in the PV conversion efficiency η, defined as the maximum electrical power P max produced by the PV cell divided by the incident photon power P in which is measured with respect to standard test conditions (Sc). These conditions refer to the spectrum (AM 1.5), solar radiation intensity (1000 Wm -2 ), cell temperature (25 ± 2 degree C) and wind speed (2 mph). Tests under STC are carried out in the laboratory at a controlled environment. There have been several studies that analyze uncertainties in the laboratory measurement of solar cell efficiencies using different solar simulators and their transference to operational situations. Our preliminary results demonstrate that the short circuit current (I SC ) of the solar cell decreases when irradiance is less than 1000 Wm -2 irrespective of the working temperature of the cell

Characterisation of multicrystalline solar cells

Directory of Open Access Journals (Sweden)

A.Q. Malik

2017-10-01

Full Text Available The evaluation and assessment of the performance of photovoltaic (PV cells in terms of measurable parameters requires the measurement of the current as a function of voltage, temperature, intensity, wind speed and spectrum. Mo st noticeable of all these parameters is the PV conversion efficiency η, defined as the maximum electrical power Pmax produced by the PV cell divided by the incident photon power P in which is measured with respect to standard test conditions (STC. These conditions refer to the spectrum (AM 1.5, solar radiation intensity (1000 Wm-2, cell temperature (25 ±2oC and wind speed (2 mph. Tests under STC are carried out in the laboratory at a controlled environment. There have been several studies that analyze uncertainties in the laboratory measurement of solar cell efficiencies using different solar simulators and their transference to operational situations. Our preliminary results demonstratethat the short circuit current (ISC of the solar cell decreases when irradiance is less than 1000 Wm-2 irrespective of the working temperature of the cell.

Polyoxometalate-modified TiO2 nanotube arrays photoanode materials for enhanced dye-sensitized solar cells

Science.gov (United States)

Liu, Ran; Sun, Zhixia; Zhang, Yuzhuo; Xu, Lin; Li, Na

2017-10-01

In this work, we prepared for the first time the TiO2 nanotube arrays (TNAs) photoanode with polyoxometalate(POMs)-modified TiO2 electron-transport layer for improving the performance of zinc phthalocyanine(ZnPc)-sensitized solar cells. The as-prepared POMs/TNAs/ZnPc composite photoanode exhibited higher photovoltaic performances than the TNAs/ZnPc photoanode, so that the power conversion efficiency of the solar cell device based on the POMs/TNAs/ZnPc photoanode displayed a notable improvement of 45%. These results indicated that the POMs play a key role in reducing charge recombination in phthalocyanine-sensitized solar cells, together with TiO2 nanotube arrays being helpful for electron transport. The mechanism of the performance improvement was demonstrated by the measurements of electrochemical impedance spectra and open-circuit voltage decay curves. Although the resulting performance is still below that of the state-of-the-art dye-sensitized solar cells, this study presents a new insight into improving the power conversion efficiency of phthalocyanine-sensitized solar cells via polyoxometalate-modified TiO2 nanotube arrays photoanode.

Introduction to solar cell production

International Nuclear Information System (INIS)

Kim, Gyeong Hae; Lee, Jun Sin

2009-08-01

This book introduces solar cell production. It is made up eight chapters, which are summary of solar cell with structure and prospect of the business, special variable of solar cell on light of the sun and factor causing variable of solar cell, production of solar cell with surface texturing, diffusion, metal printing dry and firing and edge isolation, process of solar cell on silicone wafer for solar cell, forming of electrodes, introduction of thin film solar cell on operating of solar cell, process of production and high efficiency of thin film solar cell, sorting of solar cell and production with background of silicone solar cell and thin film solar cell, structure and production of thin film solar cell and compound solar cell, introduction of solar cell module and the Industrial condition and prospect of solar cell.

Dye Sensitized Solar Cells

Directory of Open Access Journals (Sweden)

Di Wei

2010-03-01

Full Text Available Dye sensitized solar cell (DSSC is the only solar cell that can offer both the flexibility and transparency. Its efficiency is comparable to amorphous silicon solar cells but with a much lower cost. This review not only covers the fundamentals of DSSC but also the related cutting-edge research and its development for industrial applications. Most recent research topics on DSSC, for example, applications of nanostructured TiO2, ZnO electrodes, ionic liquid electrolytes, carbon nanotubes, graphene and solid state DSSC have all been included and discussed.

Silicon nanowire-based solar cells

Energy Technology Data Exchange (ETDEWEB)

Stelzner, Th; Pietsch, M; Andrae, G; Falk, F; Ose, E; Christiansen, S [Institute of Photonic Technology, Albert-Einstein-Strasse 9, D-07745 Jena (Germany)], E-mail: thomas.stelzner@ipht-jena.de

2008-07-23

The fabrication of silicon nanowire-based solar cells on silicon wafers and on multicrystalline silicon thin films on glass is described. The nanowires show a strong broadband optical absorption, which makes them an interesting candidate to serve as an absorber in solar cells. The operation of a solar cell is demonstrated with n-doped nanowires grown on a p-doped silicon wafer. From a partially illuminated area of 0.6 cm{sup 2} open-circuit voltages in the range of 230-280 mV and a short-circuit current density of 2 mA cm{sup -2} were obtained.

Silicon nanowire-based solar cells

International Nuclear Information System (INIS)

Stelzner, Th; Pietsch, M; Andrae, G; Falk, F; Ose, E; Christiansen, S

2008-01-01

The fabrication of silicon nanowire-based solar cells on silicon wafers and on multicrystalline silicon thin films on glass is described. The nanowires show a strong broadband optical absorption, which makes them an interesting candidate to serve as an absorber in solar cells. The operation of a solar cell is demonstrated with n-doped nanowires grown on a p-doped silicon wafer. From a partially illuminated area of 0.6 cm 2 open-circuit voltages in the range of 230-280 mV and a short-circuit current density of 2 mA cm -2 were obtained

Characterization of solar cells for space applications. Volume 11: Electrical characteristics of 2 ohm-cm, 228 micron wraparound solar cells as a function of intensity, temperature, and irradiation. [for solar electric propulsion

Science.gov (United States)

Anspaugh, B. E.; Beckert, D. M.; Downing, R. G.; Weiss, R. S.

1980-01-01

Parametric characterization data on Spectrolab 2 by 4 cm, 2 ohm/cm, 228 micron thick wraparound cell, a candidate for the Solar Electric Propulsion Mission, are presented. These data consist of the electrical characteristics of the solar cell under a wide range of temperature and illumination intensity combinations of the type encountered in space applications.

Fabrication of Affordable and Sustainable Solar Cells Using NiO/TiO2 P-N Heterojunction

Directory of Open Access Journals (Sweden)

Kingsley O. Ukoba

2018-01-01

Full Text Available The need for affordable, clean, efficient, and sustainable solar cells informed this study. Metal oxide TiO2/NiO heterojunction solar cells were fabricated using the spray pyrolysis technique. The optoelectronic properties of the heterojunction were determined. The fabricated solar cells exhibit a short-circuit current of 16.8 mA, open-circuit voltage of 350 mV, fill factor of 0.39, and conversion efficiency of 2.30% under 100 mW/cm2 illumination. This study will help advance the course for the development of low-cost, environmentally friendly, and sustainable solar cell materials from metal oxides.

Stability of CIGS Solar Cells and Component Materials Evaluated by a Step-Stress Accelerated Degradation Test Method: Preprint

Energy Technology Data Exchange (ETDEWEB)

Pern, F. J.; Noufi, R.

2012-10-01

A step-stress accelerated degradation testing (SSADT) method was employed for the first time to evaluate the stability of CuInGaSe2 (CIGS) solar cells and device component materials in four Al-framed test structures encapsulated with an edge sealant and three kinds of backsheet or moisture barrier film for moisture ingress control. The SSADT exposure used a 15oC and then a 15% relative humidity (RH) increment step, beginning from 40oC/40%RH (T/RH = 40/40) to 85oC/70%RH (85/70) as of the moment. The voluminous data acquired and processed as of total DH = 3956 h with 85/70 = 704 h produced the following results. The best CIGS solar cells in sample Set-1 with a moisture-permeable TPT backsheet showed essentially identical I-V degradation trend regardless of the Al-doped ZnO (AZO) layer thickness ranging from standard 0.12 μm to 0.50 μm on the cells. No clear 'stepwise' feature in the I-V parameter degradation curves corresponding to the SSADT T/RH/time profile was observed. Irregularity in I-V performance degradation pattern was observed with some cells showing early degradation at low T/RH < 55/55 and some showing large Voc, FF, and efficiency degradation due to increased series Rs (ohm-cm2) at T/RH ≥ 70/70. Results of (electrochemical) impedance spectroscopy (ECIS) analysis indicate degradation of the CIGS solar cells corresponded to increased series resistance Rs (ohm) and degraded parallel (minority carrier diffusion/recombination) resistance Rp, capacitance C, overall time constant Rp*C, and 'capacitor quality' factor (CPE-P), which were related to the cells? p-n junction properties. Heating at 85/70 appeared to benefit the CIGS solar cells as indicated by the largely recovered CPE-P factor. Device component materials, Mo on soda lime glass (Mo/SLG), bilayer ZnO (BZO), AlNi grid contact, and CdS/CIGS/Mo/SLG in test structures with TPT showed notable to significant degradation at T/RH ≥ 70/70. At T/RH = 85/70, substantial blistering of

Photovoltaic solar cell

Science.gov (United States)

Nielson, Gregory N.; Gupta, Vipin P.; Okandan, Murat; Watts, Michael R.

2015-09-08

A photovoltaic solar concentrator is disclosed with one or more transverse-junction solar cells (also termed point contact solar cells) and a lens located above each solar cell to concentrate sunlight onto the solar cell to generate electricity. Piezoelectric actuators tilt or translate each lens to track the sun using a feedback-control circuit which senses the electricity generated by one or more of the solar cells. The piezoelectric actuators can be coupled through a displacement-multiplier linkage to provide an increased range of movement of each lens. Each lens in the solar concentrator can be supported on a frame (also termed a tilt plate) having three legs, with the movement of the legs being controlled by the piezoelectric actuators.

Effects of carboxyl and ester anchoring groups on solar conversion efficiencies of TiO2 dye-sensitized solar cells

Energy Technology Data Exchange (ETDEWEB)

Sepehrifard, A.; Stublla, A.; Haftchenary, S.; Chen, S.; Potvin, P.; Morin, S. [York Univ., Toronto, ON (Canada). Dept. of Chemistry

2008-07-01

This paper reported on a study in which 2 new Ruthenium (Ru(2)) dyes bearing different anchoring groups were applied to sensitize TiO2 for dye-sensitized solar cells (DSSCs). The solar conversion efficiencies were measured. Results for 2 of the dyes which carried ester and carboxyl anchoring groups were presented. The extent and nature of the surface binding was studied using electrochemical, UV-visible, fluorescence and FTIR measurements. Solar cell performance was discussed in terms of surface concentration of chemisorbed dyes, electronic properties of the photoanodes and electrochemical properties of adsorbed dyes. The study showed that carboxylic acid groups offer better dye adsorption than ester groups. However, sensitization with warm solutions improved the adsorption of the esterified dye, most likely through transesterification. It was concluded that this may be a useful means of improving solar conversion efficiencies of ester-bearing dyes. 6 refs., 1 tab., 2 figs.

Solution-Processed Environmentally Friendly Ag2S Colloidal Quantum Dot Solar Cells with Broad Spectral Absorption

Directory of Open Access Journals (Sweden)

Viktor A. Öberg

2017-10-01

Full Text Available A facile heat-up synthesis route is used to synthesize environmentally friendly Ag2S colloidal quantum dots (CQDs that are applied as light absorbing material in solid state p-i-n junction solar cell devices. The as-synthesized Ag2S CQDs have an average size of around 3.5 nm and exhibit broad light absorption covering ultraviolet, visible, and near infrared wavelength regions. The solar cell devices are constructed with a device architecture of FTO/TiO2/Ag2S CQDs/hole transport material (HTM /Au using a solution-processed approach. Different HTMs, N2,N2,N2′,N2′,N7,N7,N7′,N7′-octakis(4-methoxyphenyl-9,9′-spirobi(9H-fluorene-2,2′,7,7′ tetramine (spiro-OMeTAD, poly(3-hexylthiophene-2,5-diyl (P3HT, and poly((2,3-bis(3-octyloxyphenyl-5,8-quinoxalinediyl-2,5-thiophenediyl TQ1 are studied for maximizing the device photovoltaic performance. The solar cell device with P3HT as a hole transport material gives the highest performance and the solar cell exhibit broad spectral absorption. These results indicate that Ag2S CQD have high potential for utilization as environmentally friendly light absorbing materials for solar cell application and that the hole transport material is critical to maximize the solar cell photovoltaic performance.

Optical and electrical properties of electron-irradiated Cu(In,Ga)Se{sub 2} solar cells

Energy Technology Data Exchange (ETDEWEB)

Hirose, Y.; Warasawa, M. [Department of Electrical Engineering, Faculty of Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda 278-8510 (Japan); Takakura, K. [Department of Information, Communication and Electrical Engineering, Kumamoto National College of Technology, 2659-2 Suya, Koshi, Kumamoto 861-1102 (Japan); Kimura, S. [Department of Electrical Engineering, Faculty of Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda 278-8510 (Japan); Chichibu, S.F. [CANTech, Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba, Sendai 980-8577 (Japan); Ohyama, H. [Department of Information, Communication and Electrical Engineering, Kumamoto National College of Technology, 2659-2 Suya, Koshi, Kumamoto 861-1102 (Japan); Sugiyama, M., E-mail: mutsumi@rs.noda.tus.ac.jp [Department of Electrical Engineering, Faculty of Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda 278-8510 (Japan)

2011-08-31

The optical and electrical properties of electron-irradiated Cu(In,Ga)Se{sub 2} (CIGS) solar cells and the thin films that composed the CIGS solar cell structure were investigated. The transmittance of indium tin oxide (ITO), ZnO:Al, ZnO:Ga, undoped ZnO, and CdS thin films did not change for a fluence of up to 1.5 x 10{sup 18} cm{sup -2}. However, the resistivity of ZnO:Al and ZnO:Ga, which are generally used as window layers for CIGS solar cells, increased with increasing irradiation fluence. For CIGS thin films, the photoluminescence peak intensity due to Cu-related point defects, which do not significantly affect solar cell performance, increased with increasing electron irradiation. In CIGS solar cells, decreasing J{sub SC} and increasing R{sub s} reflected the influence of irradiated ZnO:Al, and decreasing V{sub OC} and increasing R{sub sh} mainly tended to reflect the pn-interface properties. These results may indicate that the surface ZnO:Al thin film and several heterojunctions tend to degrade easily by electron irradiation as compared with the bulk of semiconductor-composed solar cells.

Analysis of the High Conversion Efficiencies β-FeSi2 and BaSi2 n-i-p Thin Film Solar Cells

International Nuclear Information System (INIS)

Huang, J.Sh.; Lee, K.W.; Tseng, Y.H.

2014-01-01

Both β-FeSi 2 and BaSi 2 are silicides and have large absorption coefficients; thus they are very promising Si-based new materials for solar cell applications. In this paper, the dc I-V characteristics of n-Si/i-βFeSi 2 /p-Si and n-Si/i-BaSi 2 /p-Si thin film solar cells are investigated by solving the charge transport equations with optical generations. The diffusion current densities of free electron and hole are calculated first. Then the drift current density in the depletion regions is obtained. The total current density is the sum of diffusion and drift current densities. The conversion efficiencies are obtained from the calculated I-V curves. The optimum conversion efficiency of n-Si/i-βFeSi 2 /p-Si thin film solar cell is 27.8% and that of n-Si/i-BaSi 2 /p-Si thin film solar cell is 30.4%, both are larger than that of Si n-i-p solar cell (η is 20.6%). These results are consistent with their absorption spectrum. The calculated conversion efficiency of Si n-i-p solar cell is consistent with the reported researches. Therefore, these calculation results are valid in this work.

Analysis of the High Conversion Efficiencies β-FeSi2 and BaSi2 n-i-p Thin Film Solar Cells

Directory of Open Access Journals (Sweden)

Jung-Sheng Huang

2014-01-01

Full Text Available Both β-FeSi2 and BaSi2 are silicides and have large absorption coefficients; thus they are very promising Si-based new materials for solar cell applications. In this paper, the dc I-V characteristics of n-Si/i-βFeSi2/p-Si and n-Si/i-BaSi2/p-Si thin film solar cells are investigated by solving the charge transport equations with optical generations. The diffusion current densities of free electron and hole are calculated first. Then the drift current density in the depletion regions is obtained. The total current density is the sum of diffusion and drift current densities. The conversion efficiencies are obtained from the calculated I-V curves. The optimum conversion efficiency of n-Si/i-βFeSi2/p-Si thin film solar cell is 27.8% and that of n-Si/i-BaSi2/p-Si thin film solar cell is 30.4%, both are larger than that of Si n-i-p solar cell (η is 20.6%. These results are consistent with their absorption spectrum. The calculated conversion efficiency of Si n-i-p solar cell is consistent with the reported researches. Therefore, these calculation results are valid in this work.

Spectrally and spatially resolved photoluminescence. Lateral fluctuations and depth profiles of Cu(In,Ga)Se2-absorbers

International Nuclear Information System (INIS)

Neumann, Oliver

2013-01-01

The aim of this thesis is the development and refinement of photoluminescence (PL) methods for inhomogeneous absorbers to identify lateral fluctuations and depth-dependent variations of spectroscopic, optical and opto-electronic properties in the submicron/micron range. The first approach deals with the spectral investigation of PL emission from the front and the rear side of an absorber, whereas the second idea is about the analysis of PL spectra from the front side of the absorber for different absorber thicknesses. Another technique for determination of depth-dependent variations are confocal PL measurements at cross sections of absorbers. The last concept pursues the study of lateral fluctuations with an optical near-field microscope on specially prepared absorbers. These four strategies are demonstrated with samples based on Cu(In,Ga)Se 2 .

Ionization effects on Cu(In, Ga)Se{sub 2} thin-film solar cells

Energy Technology Data Exchange (ETDEWEB)

Kawakita, Shirou; Imaizumi, Mitsuru [Japan Aerospace Exploration Agency, 2-1-1 Sengen, Tsukuba, Ibaraki 305-0031 (Japan); Ishizuka, Shogo; Shibata, Hajime [Institute of National Advanced Industrial Science and Technology, 1-1 Umezono, Tsukuba 305-8568 (Japan); Okuda, Shuichi [Osaka Prefecture University, 1-2 Gakuenmachi, Sakai 599-8570 (Japan)

2017-06-15

Cu (In, Ga) Se{sub 2} (CIGS) solar cells were irradiated with 60, 100, and 250 keV electrons to reveal the characteristics of radiation induced defects. Electrons with less than 200 keV energy cannot generate any displacement defects in CIGS materials. In addition, a low amount of the electrons can improve the roll-over behavior in current-voltage characteristics of CIGS solar cells. However, the deterioration of the electrical performance in CIGS solar cells irradiated with a high amount of electrons was observed. The deterioration rate on the cells irradiated with lower-energy electrons was higher than that induced by electrons with higher-energy. The degradation curve of J{sub SC} based on the ionizing dose estimated from the ionizing energy loss model does not depend on the energy of electrons. Therefore, it implies that the electrons can degrade CIGS solar cells due to the ionization effect. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Degradation and stability of R2R manufactured polymer solar cells

DEFF Research Database (Denmark)

Norrman, Kion; Krebs, Frederik C

2009-01-01

Polymer solar cells have many advantages such as light weight, flexibility, environmental friendliness, low thermal budget, low cost and most notably very fast modes of production by printing techniques. Production experiments have shown that it is highly feasible with existing technology to mass...... produce polymer solar cells at a very low cost. We have employed state-of-the-art analytical techniques to address the challenging issues of degradation and stability of R2R manufactured devices. We have specifically studied the relative effect of oxygen and water on the operational devices in regard...

OPTOELECTRONIC PROPERTIES OF CdS – AgInS2 SOLAR CELLS

Directory of Open Access Journals (Sweden)

M. A. Abdullaev

2016-01-01

Full Text Available Aim. To conduct experimental studies of optoelectronic properties of CdS - AgInS2 solar cells.Methods. AgInS2 films for solar cell CdS-AgInS2 were obtained by magnetron sputtering of crystalline targets derived from bulk ingots. Cadmium sulfide layers were deposited on the AgInS2 films by an electrochemical method in cadmium salts solution, thiourea and ammonia. AgInS2 bulk crystals were obtained in two stages: a direct fusion of the primary components (99,999 in a stoichiometric ratio, followed by directional solidification in a vertical furnace; re-synthesis has been performed on a staggered basis by heating the obtained ingots at temperatures close to the melting points of elements in the two-zone horizontal furnace.Findings. The paper presents the results of experimental studies of the electrical properties and photosensitivity of CdS-AgInS2 film heterojunction obtained by the magnetron. We measured the current-voltage characteristics and quantum efficiency of photoconversion at temperatures up to 250-356 K. We also identified the short circuit current of up to 25 mA/cm2 and open circuit voltage of 0.38 V.Conclusions. The study of the properties of solar cells in recent years has an important place. The results presented in the work would contribute to more efficient conversion of solar energy into electricity.

Mesoscopic CH 3 NH 3 PbI 3 /TiO 2 Heterojunction Solar Cells

KAUST Repository

Etgar, Lioz

2012-10-24

We report for the first time on a hole conductor-free mesoscopic methylammonium lead iodide (CH 3NH 3PbI 3) perovskite/TiO 2 heterojunction solar cell, produced by deposition of perovskite nanoparticles from a solution of CH 3NH 3I and PbI 2 in γ-butyrolactone on a 400 nm thick film of TiO 2 (anatase) nanosheets exposing (001) facets. A gold film was evaporated on top of the CH 3NH 3PbI 3 as a back contact. Importantly, the CH 3NH 3PbI 3 nanoparticles assume here simultaneously the roles of both light harvester and hole conductor, rendering superfluous the use of an additional hole transporting material. The simple mesoscopic CH 3NH 3PbI 3/TiO 2 heterojunction solar cell shows impressive photovoltaic performance, with short-circuit photocurrent J sc= 16.1 mA/cm 2, open-circuit photovoltage V oc = 0.631 V, and a fill factor FF = 0.57, corresponding to a light to electric power conversion efficiency (PCE) of 5.5% under standard AM 1.5 solar light of 1000 W/m 2 intensity. At a lower light intensity of 100W/m 2, a PCE of 7.3% was measured. The advent of such simple solution-processed mesoscopic heterojunction solar cells paves the way to realize low-cost, high-efficiency solar cells. © 2012 American Chemical Society.

Block copolymer directed synthesis of mesoporous TiO 2 for dye-sensitized solar cells

KAUST Repository

Nedelcu, Mihaela

2009-01-01

The morphology of TiO2 plays an important role in the operation of solid-state dye-sensitized solar cells. By using polyisoprene-block- ethyleneoxide (PI-b-PEO) copolymers as structure directing agents for a sol-gel based synthesis of mesoporous TiO2, we demonstrate a strategy for the detailed control of the semiconductor morphology on the 10 nm length scale. The careful adjustment of polymer molecular weight and titania precursor content is used to systematically vary the material structure and its influence upon solar cell performance is investigated. Furthermore, the use of a partially sp 2 hybridized structure directing polymer enables the crystallization of porous TiO2 networks at high temperatures without pore collapse, improving its performance in solid-state dye-sensitized solar cells. © 2009 The Royal Society of Chemistry.

Solar Photovoltaic Cells.

Science.gov (United States)

Mickey, Charles D.

1981-01-01

Reviews information on solar radiation as an energy source. Discusses these topics: the key photovoltaic material; the bank theory of solids; conductors, semiconductors, and insulators; impurity semiconductors; solid-state photovoltaic cell operation; limitations on solar cell efficiency; silicon solar cells; cadmium sulfide/copper (I) sulfide…

Particle Size Effects of TiO2 Layers on the Solar Efficiency of Dye-Sensitized Solar Cells

Directory of Open Access Journals (Sweden)

Ming-Jer Jeng

2013-01-01

Full Text Available Large particle sizes having a strong light scattering lead to a significantly decreased surface area and small particle sizes having large surface area lack light-scattering effect. How to combine large and small particle sizes together is an interesting work for achieving higher solar efficiency. In this work, we investigate the solar performance influence of the dye-sensitized solar cells (DSSCs by the multiple titanium oxide (TiO2 layers with different particle sizes. It was found that the optimal TiO2 thickness depends on the particle sizes of TiO2 layers for achieving the maximum efficiency. The solar efficiency of DSSCs prepared by triple TiO2 layers with different particle sizes is higher than that by double TiO2 layers for the same TiO2 thickness. The choice of particle size in the bottom layer is more important than that in the top layer for achieving higher solar efficiency. The choice of the particle sizes in the middle layer depends on the particle sizes in the bottom and top layers. The mixing of the particle sizes in the middle layer is a good choice for achieving higher solar efficiency.

Industrial n-type solar cells with >20% cell efficiency

Energy Technology Data Exchange (ETDEWEB)

Romijn, I.G.; Anker, J.; Burgers, A.R.; Gutjahr, A.; Koppes, M.; Kossen, E.J.; Lamers, M.W.P.E.; Heurtault, Benoit; Saynova-Oosterling, D.S.; Tool, C.J.J. [ECN Solar Energy, Petten (Netherlands)

2013-03-15

To realize high efficiencies at low costs, ECN has developed the n-Pasha solar cell concept. The n-Pasha cell concept is a bifacial solar cell concept on n-Cz base material, with which average efficiencies of above 20% have been demonstrated. In this paper recent developments at ECN to improve the cost of ownership (lower Euro/Wp) of the n-Pasha cell concept are discussed. Two main drivers for the manufacturing costs of n-type solar cells are addressed: the n-type Cz silicon material and the silver consumption. We show that a large resistivity range between 2 and 8 cm can be tolerated for high cell efficiency, and that the costs due to the silver metallization can be significantly reduced while increasing the solar cell efficiency. Combining the improved efficiency and cost reduction makes the n-Pasha cell concept a very cost effective solution to manufacture high efficient solar cells and modules.

Quantum-Tuned Multijunction Solar Cells

Science.gov (United States)

Koleilat, Ghada I.

Multijunction solar cells made from a combination of CQDs of differing sizes and thus bandgaps are a promising means by which to increase the energy harvested from the Sun's broad spectrum. In this dissertation, we first report the systematic engineering of 1.6 eV PbS CQD solar cells, optimal as the front cell responsible for visible wavelength harvesting in tandem photovoltaics. We rationally optimize each of the device's collecting electrodes---the heterointerface with electron accepting TiO2 and the deep-work-function hole-collecting MoO3 for ohmic contact---for maximum efficiency. Room-temperature processing enables flexible substrates, and permits tandem solar cells that integrate a small-bandgap back cell atop a low thermal-budget larger-bandgap front cell. We report an electrode strategy that enables a depleted heterojunction CQD PV device to be fabricated entirely at room temperature. We develop a two-layer donor-supply electrode (DSE) in which a highly doped, shallow work function layer supplies a high density of free electrons to an ultrathin TiO2 layer via charge-transfer doping. Using the DSE we build all-room-temperature-processed small-bandgap (1 eV) colloidal quantum dot solar cells suitable for use as the back junction in tandem solar cells. We further report in this work the first efficient CQD tandem solar cells. We use a graded recombination layer (GRL) to provide a progression of work functions from the hole-accepting electrode in the bottom cell to the electron-accepting electrode in the top cell. The recombination layers must allow the hole current from one cell to recombine, with high efficiency and low voltage loss, with the electron current from the next cell. We conclude our dissertation by presenting the generalized conditions for design of efficient graded recombination layer solar devices. We demonstrate a family of new GRL designs experimentally and highlight the benefits of the progression of dopings and work functions in the

Hybrid Solar Cell with TiO2 Film: BBOT Polymer and Copper Phthalocyanine as Sensitizer

Directory of Open Access Journals (Sweden)

Saptadip Saha

2016-01-01

Full Text Available An organic-inorganic hybrid solar cell was fabricated using Titanium dioxide (TiO2: 2,5-bis(5-tert-butyl-2-benzoxazolyl thiophene (BBOT film and Copper Phthalocyanine (CuPc as a sensitizer. BBOT was used in photodetector in other reported research works, but as per best of our knowledge, it was not implemented in solar cells till date. The blend of TiO2: BBOT blend was used to fabricate the film on ITO-coated glass and further a thin layer of CuPc was coated on the film. This was acted as photoanode and another ITO coated glass with a platinum coating was used as a counter electrode (cathode. An optimal blend of acetonitrile (solvent (50-100%, 1,3-dimethylimidazolium iodide (10-25%, iodine (2.5-10% and lithium iodide, pyridine derivative and thiocyanate was used as electrolytes in the hybrid solar cell. The different structural, optical and electrical characteristics were measured. The Hybrid solar cell showed a maximum conversion efficiency of 6.51%.

Investigation of Non-Vacuum Deposition Techniques in Fabrication of Chalcogenide-Based Solar Cell Absorbers

KAUST Repository

Alsaggaf, Ahmed

2015-01-01

simulating R2R process design at speeds up to 1.05 m/min. The research clarified morphological and compositional impacts of Nd:YAG laser heat-treatment on Cu(In,Ga)Se2 absorber layer to simplify the annealing step in non-vacuum environment compatible to R2R

Industrialisation of polymer solar cells. Phase 2: Consolidation

DEFF Research Database (Denmark)

Lauritzen, Hanne; Gevorgyan, Suren; Frausig, Jesper

of the OPV devices – targets that are import both for niche applications and bulk power production. Besides the work dedicated to solving these three key targets, two more activities have been included in the project; a pre-study on OPV solar parks and an evaluation of the business opportunities arising......The present report refers to the project “Industrialization of polymer solar cells – phase 2”. Both the project and this report build directly upon the prior phase 1 where the basic OPV technology, ProcessOne, was transferred to Mekoprint. This second phase focuses on an anchoring......-scale power production. The project represents thus a crossroad, where Mekoprint and DTU gradually differentiate themselves with respect to applications and therefore also their R&D priorities. The key targets of phase 2 relate to production cost, stabilization of the production and operational lifetime...

Light-trapping in perovskite solar cells

Energy Technology Data Exchange (ETDEWEB)

Du, Qing Guo, E-mail: duqi0001@e.ntu.edu.sg [Department of Physics, University of Toronto, 60 ST. George St., Toronto, Ontario, M5S 1A7 (Canada); Institute of High Performance Computing, A* STAR, Singapore, 138632 (Singapore); Shen, Guansheng [Department of Physics, University of Toronto, 60 ST. George St., Toronto, Ontario, M5S 1A7 (Canada); School of Information and Communication Engineering, Beijing University of Posts and Telecommunications, Beijing 100876 (China); John, Sajeev [Department of Physics, University of Toronto, 60 ST. George St., Toronto, Ontario, M5S 1A7 (Canada); Department of Physics, Soochow University, Suzhou (China)

2016-06-15

We numerically demonstrate enhanced light harvesting efficiency in both CH{sub 3}NH{sub 3}PbI{sub 3} and CH(NH{sub 2}){sub 2}PbI{sub 3}-based perovskite solar cells using inverted vertical-cone photonic-crystal nanostructures. For CH{sub 3}NH{sub 3}PbI{sub 3} perovskite solar cells, the maximum achievable photocurrent density (MAPD) reaches 25.1 mA/cm{sup 2}, corresponding to 92% of the total available photocurrent in the absorption range of 300 nm to 800 nm. Our cell shows 6% absorption enhancement compared to the Lambertian limit (23.7 mA/cm{sup 2}) and has a projected power conversion efficiency of 12.9%. Excellent solar absorption is numerically demonstrated over a broad angular range from 0 to 60 degree for both S- and P- polarizations. For the corresponding CH(NH{sub 2}){sub 2}PbI{sub 3} based perovskite solar cell, with absorption range of 300 nm to 850 nm, we find a MAPD of 29.1 mA/cm{sup 2}, corresponding to 95.4% of the total available photocurrent. The projected power conversion efficiency of the CH(NH{sub 2}){sub 2}PbI{sub 3} based photonic crystal solar cell is 23.4%, well above the current world record efficiency of 20.1%.

Iron sulphide solar cells

Science.gov (United States)

Ennaoui, A.; Tributsch, H.

1984-12-01

The abundant, naturally occurring natural compound pyrite (FeS2) can be used as a semiconducting material for photoelectrochemical and photovoltaic solar cells. Unlike most of the intensively studied photoactive materials, pyrite solar cell production would never be limited by the availability of the elements or by their compatibility with the environment. An energy gap of 0.95 eV has been determined for pyrite, and it is noted that the theoretical efficiency limit for solar energy conversion in this material is of the order of 15-20 percent.

Enhanced Charge Extraction of Li-Doped TiO2 for Efficient Thermal-Evaporated Sb2S3 Thin Film Solar Cells

Science.gov (United States)

Lan, Chunfeng; Luo, Jingting; Lan, Huabin; Fan, Bo; Peng, Huanxin; Zhao, Jun; Sun, Huibin; Zheng, Zhuanghao; Liang, Guangxing; Fan, Ping

2018-01-01

We provided a new method to improve the efficiency of Sb2S3 thin film solar cells. The TiO2 electron transport layers were doped by lithium to improve their charge extraction properties for the thermal-evaporated Sb2S3 solar cells. The Mott-Schottky curves suggested a change of energy band and faster charge transport in the Li-doped TiO2 films. Compared with the undoped TiO2, Li-doped mesoporous TiO2 dramatically improved the photo-voltaic performance of the thermal-evaporated Sb2S3 thin film solar cells, with the average power conversion efficiency (PCE) increasing from 1.79% to 4.03%, as well as the improved open-voltage (Voc), short-circuit current (Jsc) and fill factors. The best device based on Li-doped TiO2 achieved a power conversion efficiency up to 4.42% as well as a Voc of 0.645 V, which are the highest values among the reported thermal-evaporated Sb2S3 solar cells. This study showed that Li-doping on TiO2 can effectively enhance the charge extraction properties of electron transport layers, offering a new strategy to improve the efficiency of Sb2S3-based solar cells. PMID:29495612

Enhanced Charge Extraction of Li-Doped TiO2 for Efficient Thermal-Evaporated Sb2S3 Thin Film Solar Cells

Directory of Open Access Journals (Sweden)

Chunfeng Lan

2018-02-01

Full Text Available We provided a new method to improve the efficiency of Sb2S3 thin film solar cells. The TiO2 electron transport layers were doped by lithium to improve their charge extraction properties for the thermal-evaporated Sb2S3 solar cells. The Mott-Schottky curves suggested a change of energy band and faster charge transport in the Li-doped TiO2 films. Compared with the undoped TiO2, Li-doped mesoporous TiO2 dramatically improved the photo-voltaic performance of the thermal-evaporated Sb2S3 thin film solar cells, with the average power conversion efficiency (PCE increasing from 1.79% to 4.03%, as well as the improved open-voltage (Voc, short-circuit current (Jsc and fill factors. The best device based on Li-doped TiO2 achieved a power conversion efficiency up to 4.42% as well as a Voc of 0.645 V, which are the highest values among the reported thermal-evaporated Sb2S3 solar cells. This study showed that Li-doping on TiO2 can effectively enhance the charge extraction properties of electron transport layers, offering a new strategy to improve the efficiency of Sb2S3-based solar cells.

Nanographite-TiO2 photoanode for dye sensitized solar cells

Science.gov (United States)

Sharma, S. S.; Sharma, Khushboo; Sharma, Vinay

2016-05-01

Nanographite-TiO2 (NG-TiO2) composite was successfully synthesized by the hydrothermal method and its performance as the photoanode for dye-sensitized solar cells (DSSCs) was investigated. Environmental Scanning electron microscope (E-SEM) micrographs show the uniform distribution of TiO2 nanoflowers deposited over nanographite sheets. The average performance characteristics of the assembled cell in terms of short-ciruit current density (JSC), open circuit voltage (VOC), fill factor (FF) and photoelectric conversion efficiency (η) were measured.

Research Update: Doping ZnO and TiO2 for solar cells

Directory of Open Access Journals (Sweden)

Robert L. Z. Hoye

2013-12-01

Full Text Available ZnO and TiO2 are two of the most commonly used n-type metal oxide semiconductors in new generation solar cells due to their abundance, low-cost, and stability. ZnO and TiO2 can be used as active layers, photoanodes, buffer layers, transparent conducting oxides, hole-blocking layers, and intermediate layers. Doping is essential to tailor the materials properties for each application. The dopants used and their impact in solar cells are reviewed. In addition, the advantages, disadvantages, and commercial potential of the various fabrication methods of these oxides are presented.

Enhanced photovoltaic performance of a quantum dot-sensitized solar cell using a Nb-doped TiO2 electrode

International Nuclear Information System (INIS)

Jiang, Lei; You, Ting; Deng, Wei-Qiao

2013-01-01

In this work Nb-doped anatase TiO 2 nanocrystals are used as the photoanode of quantum-dot-sensitized solar cells. A solar cell with CdS/CdSe quantum dots co-sensitized 2.5 mol% Nb-doped anatase TiO 2 nanocrystals can achieve a photovoltaic conversion efficiency of 3.3%, which is almost twice as high as the 1.7% obtained by a cell based on undoped TiO 2 nanocrystals. The incident photon-to-current conversion efficiency can reach as high as 91%, which is a record for all quantum-dot-sensitized solar cells. Detailed analysis shows that such an enhancement is due to improved lifetime and diffusion length of electrons in the solar cell. (paper)

Enhanced photovoltaic performance of a quantum dot-sensitized solar cell using a Nb-doped TiO2 electrode.

Science.gov (United States)

Jiang, Lei; You, Ting; Deng, Wei-Qiao

2013-10-18

In this work Nb-doped anatase TiO2 nanocrystals are used as the photoanode of quantum-dot-sensitized solar cells. A solar cell with CdS/CdSe quantum dots co-sensitized 2.5 mol% Nb-doped anatase TiO2 nanocrystals can achieve a photovoltaic conversion efficiency of 3.3%, which is almost twice as high as the 1.7% obtained by a cell based on undoped TiO2 nanocrystals. The incident photon-to-current conversion efficiency can reach as high as 91%, which is a record for all quantum-dot-sensitized solar cells. Detailed analysis shows that such an enhancement is due to improved lifetime and diffusion length of electrons in the solar cell.

Effect of the thin Ga2O3 layer in n+-ZnO/n-Ga2O3/p-Cu2O heterojunction solar cells

International Nuclear Information System (INIS)

Minami, Tadatsugu; Nishi, Yuki; Miyata, Toshihiro

2013-01-01

The influence of inserting a Ga 2 O 3 thin film as an n-type semiconductor layer on the obtainable photovoltaic properties in Cu 2 O-based heterojunction solar cells was investigated with a transparent conductive Al-doped ZnO (AZO) thin film/n-Ga 2 O 3 thin film/p-Cu 2 O sheet structure. It was found that this Ga 2 O 3 thin film can greatly improve the performance of Cu 2 O-based heterojunction solar cells fabricated using polycrystalline Cu 2 O sheets that had been prepared by a thermal oxidization of copper sheets. The obtained photovoltaic properties in the AZO/Ga 2 O 3 /Cu 2 O heterojunction solar cells were strongly dependent on the deposition conditions of the Ga 2 O 3 films. The external quantum efficiency obtained in AZO/Ga 2 O 3 /Cu 2 O heterojunction solar cells was found to be greater at wavelengths below approximately 500 nm than that obtained in AZO/Cu 2 O heterojunction solar cells (i.e., prepared without a Ga 2 O 3 layer) at equivalent wavelengths. This improvement of photovoltaic properties is mainly attributed to a decrease in the level of defects at the interface between the Ga 2 O 3 thin film and the Cu 2 O sheet. Conversion efficiencies over 5% were obtained in AZO/Ga 2 O 3 /Cu 2 O heterojunction solar cells fabricated using an n-Ga 2 O 3 thin-film layer prepared with a thickness of 40–80 nm at an O 2 gas pressure of approximately 1.7 Pa by a pulsed laser deposition. - Highlights: • We demonstrate high-efficiency Cu 2 O-based p-n heterojunction solar cells. • A non-doped Ga 2 O 3 thin film was used as an n-type semiconductor layer. • The Ga 2 O 3 thin film was prepared at a low temperature by a low damage deposition. • p-type Cu 2 O sheets prepared by thermal oxidization of copper sheets were used. • Conversion efficiencies over 5% were obtained in AZO/n-Ga 2 O 3 /p-Cu 2 O solar cells

Semiconductor quantum dot-sensitized solar cells.

Science.gov (United States)

Tian, Jianjun; Cao, Guozhong

2013-10-31

Semiconductor quantum dots (QDs) have been drawing great attention recently as a material for solar energy conversion due to their versatile optical and electrical properties. The QD-sensitized solar cell (QDSC) is one of the burgeoning semiconductor QD solar cells that shows promising developments for the next generation of solar cells. This article focuses on recent developments in QDSCs, including 1) the effect of quantum confinement on QDSCs, 2) the multiple exciton generation (MEG) of QDs, 3) fabrication methods of QDs, and 4) nanocrystalline photoelectrodes for solar cells. We also make suggestions for future research on QDSCs. Although the efficiency of QDSCs is still low, we think there will be major breakthroughs in developing QDSCs in the future.

Low temperature fabrication of perovskite solar cells with TiO2 nanoparticle layers

International Nuclear Information System (INIS)

Kanayama, Masato; Oku, Takeo; Suzuki, Atsushi; Yamada, Masahiro; Sakamoto, Hiroki; Minami, Satoshi; Kohno, Kazufumi

2016-01-01

TiO 2 /CH 3 NH 3 PbI 3 -based photovoltaic devices were fabricated by a spin-coating method using a mixture solution. TiO 2 require high-temperature processing to achieve suitably high carrier mobility. TiO 2 electron transport layers and TiO 2 scaffold layers for the perovskite were fabricated from TiO 2 nanoparticles with different grain sizes. The photovoltaic properties and microstructures of solar cells were characterized. Nanoparticle sizes of these TiO 2 were 23 nm and 3 nm and the performance of solar cells was improved by combination of two TiO 2 nanoparticles

Recent Advances in Organic Solar Cells

Directory of Open Access Journals (Sweden)

Thomas Kietzke

2007-01-01

Full Text Available Solar cells based on organic semiconductors have attracted much attention. The thickness of the active layer of organic solar cells is typically only 100 nm thin, which is about 1000 times thinner than for crystalline silicon solar cells and still 10 times thinner than for current inorganic thin film cells. The low material consumption per area and the easy processing of organic semiconductors offer a huge potential for low cost large area solar cells. However, to compete with inorganic solar cells the efficiency of organic solar cells has to be improved by a factor of 2-3. Several organic semiconducting materials have been investigated so far, but the optimum material still has to be designed. Similar as for organic light emitting devices (OLED small molecules are competing with polymers to become the material of choice. After a general introduction into the device structures and operational principles of organic solar cells the three different basic types (all polymer based, all small molecules based and small molecules mixed with polymers are described in detail in this review. For each kind the current state of research is described and the best of class reported efficiencies are listed.

Low-temperature processed ultrathin TiO2 for efficient planar heterojunction perovskite solar cells

International Nuclear Information System (INIS)

Huang, Xiaokun; Hu, Ziyang; Xu, Jie; Wang, Peng; Zhang, Jing; Zhu, Yuejin

2017-01-01

Highlights: • An ultrathin and discrete TiO 2 (u-TiO 2 ) was fabricated at low temperature. • High-performance perovskite solar cells based u-TiO 2 was realized. • u-TiO 2 between perovskite and FTO functions as a bridge for electron transport. • u-TiO 2 accelerates electron transfer and alleviates charge recombination. - Abstract: A compact TiO 2 (c-TiO 2 ) layer fabricated by spin coating or spray pyrolysis following a high-temperature sintering is a routine in high-performance planar heterojunction perovskite solar cells. Here, we demonstrate an effective low-temperature approach to fabricate an ultrathin and discrete TiO 2 (u-TiO 2 ) for enhancing photovoltaic performance of perovskite solar cells. Via hydrolysis of low-concentration TiCl 4 solution at 70 °C, u-TiO 2 was grown on a fluorine doped tin oxide (FTO) substrate, forming the electron selective contact with the photoactive CH 3 NH 3 PbI 3 film. The perovskite solar cell using u-TiO 2 achieves an efficiency of 13.42%, which is compared to 13.56% of the device using c-TiO 2 prepared by high-temperature sintering. Cyclic voltammetry, steady-state photoluminescence spectroscopy and electrical impedance spectroscopy were conducted to study interface engineering and charge carrier dynamics. Our results suggest that u-TiO 2 functions as a bridge for electron transport between perovskite and FTO, which accelerates electron transfer and alleviates charge recombination.

Crossed BiOI flake array solar cells

Energy Technology Data Exchange (ETDEWEB)

Wang, Kewei; Jia, Falong; Zhang, Lizhi [Key Laboratory of Pesticide and Chemical Biology of Ministry of Education, College of Chemistry, Central China Normal University, Wuhan (China); Zheng, Zhi [Institute of Surface Micro and Nano Materials, Xuchang University (China)

2010-12-15

We report a new kind of solar cell based on crossed flake-like BiOI arrays for the first time. The BiOI flake arrays were fabricated on an FTO glass with a TiO{sub 2} block layer at room temperature by successive ionic layer adsorption and reaction (SILAR) method. The resulting BiOI flake array solar cell exhibited enhanced photovoltaic performance under solar illumination. This work provides an attractive and new solar cell system and a facile route to fabricate low cost and non-toxic solar cell. (author)

Solar cells: An environment-benign energy source?

International Nuclear Information System (INIS)

Alsema, E.; Van Engelenburg, B.

1993-01-01

Attention is paid to a study on the environmental aspects of solar cell production techniques and the possibility of recycling solar cell materials. In the study the following types of solar cell modules are dealt with: CdTe and CuInSe 2 , amorphous silicon, crystalline silicon, and GaAs. It appears that silicon solar cells have minor environmental effects and are controllable. However, attention should be paid to the energy consumption and the use of etching and purification materials during the production of solar cells, and the emission of heavy metals from f.e. CdTe/CIS solar cells during and after usage. Without effective recycling enough supplies of indium, selenium and tellurium cannot be guaranteed. 3 figs., 1 ill

ZnSe passivation layer for the efficiency enhancement of CuInS2 quantum dots sensitized solar cells

International Nuclear Information System (INIS)

Peng, Zhuoyin; Liu, Yueli; Zhao, Yinghan; Chen, Keqiang; Cheng, Yuqing; Kovalev, Valery; Chen, Wen

2014-01-01

Highlights: • ZnSe is employed as passivation layer in CuInS 2 quantum dots sensitized solar cells. • Slight red-shift has been occurred in UV–vis absorption spectra with ZnSe coating. • CuInS 2 based solar cells coated by ZnSe have better efficiency than that of ZnS. • Higher rate of charge transport can be produced after coating with ZnSe. -- Abstract: The effect of ZnSe passivation layer is investigated in the CuInS 2 quantum dot sensitized solar cells, which is used to improve the photovoltaic performance. The CuInS 2 quantum dot sensitized TiO 2 photo-anodes are prepared by assembly linking technique, and then deposited by the ZnSe passivation layer using the successive ionic layer absorption and reaction technique. The optical absorption edge and photoluminescence peak have slightly red-shifted after the passivation layer coating. Under solar light illumination, the ZnSe passivation layer based CuInS 2 quantum dot sensitized solar cells have the higher photovoltaic efficiency of 0.95% and incident photon conversion efficiency response than that of pure CuInS 2 based solar cells and ZnS passivation layer based solar cells, as the electron injection rate becomes faster after coating with ZnSe passivation layer

Coupling of Luminescent Solar Concentrators to Plasmonic Solar Cells

Science.gov (United States)

Wang, Shu-Yi

absorption at the emission peak of the dye. A factorial increase in the output power density of coupled PV as compared to PV exposed directly to solar spectrum is observed for high light concentration on the edge. These initial results motivated a more in-depth study of coupled LSC-PV system, which took into account the radiative transport inside the realistic LSC. These investigations were carried out on LSCs using Lumogen Red305 and Rhodamine 6G dyes coupled to pristine and plasmonic ultra-thin film silicon solar cells. Prediction based on detailed balance shows that the coupled LSC-plasmonic solar cell can generate 63.7 mW/cm2 with a photocurrent density of 71.3 mA/cm2 which is higher than that of cSi solar cells available on current market. The second part of the thesis focuses on PV absorption enhancement techniques. First, the effect of vertical positioning of plasmonic nanostructures on absorption enhancement was theoretically investigated to understand which one of the three mechanisms usually responsible for the enhancement (forward scattering, diffraction and localized surface plamson) plays the dominant role. Simulation results suggested that the maximum enhancement occurred when placing the nanostructures in the rear side of the cell because of longer path length due to scattering. The experimental effort then switched focus on substrate patterning, which is a less expensive alternative to plasmonic absorption enhancement. Specifically, a nanostructured substrate was prepared by a simple electrochemical process based on two-step aluminum anodization technique. The absorption of thin film silicon deposited on these substrates showed a broadband enhancement. The overall photocurrent density was up to 40% higher than that of films deposited on flat substrates. In conclusion, the studies carried out in this thesis indicate that spectral coupling of LSCs to thin film solar cells could lead to significant improvements in PV output power density. Moreover, while the

Nanographite-TiO_2 photoanode for dye sensitized solar cells

International Nuclear Information System (INIS)

Sharma, S. S.; Sharma, Khushboo; Sharma, Vinay

2016-01-01

Nanographite-TiO_2 (NG-TiO_2) composite was successfully synthesized by the hydrothermal method and its performance as the photoanode for dye-sensitized solar cells (DSSCs) was investigated. Environmental Scanning electron microscope (E-SEM) micrographs show the uniform distribution of TiO_2 nanoflowers deposited over nanographite sheets. The average performance characteristics of the assembled cell in terms of short-ciruit current density (J_S_C), open circuit voltage (V_O_C), fill factor (FF) and photoelectric conversion efficiency (η) were measured.

High-efficiency concentrator silicon solar cells

Energy Technology Data Exchange (ETDEWEB)

Sinton, R.A.; Cuevas, A.; King, R.R.; Swanson, R.M. (Stanford Univ., CA (USA). Solid-State Electronics Lab.)

1990-11-01

This report presents results from extensive process development in high-efficiency Si solar cells. An advanced design for a 1.56-cm{sup 2} cell with front grids achieved 26% efficiency at 90 suns. This is especially significant since this cell does not require a prismatic cover glass. New designs for simplified backside-contact solar cells were advanced from a status of near-nonfunctionality to demonstrated 21--22% for one-sun cells in sizes up to 37.5 cm{sup 2}. An efficiency of 26% was achieved for similar 0.64-cm{sup 2} concentrator cells at 150 suns. More fundamental work on dopant-diffused regions is also presented here. The recombination vs. various process and physical parameters was studied in detail for boron and phosphorous diffusions. Emitter-design studies based solidly upon these new data indicate the performance vs design parameters for a variety of the cases of most interest to solar cell designers. Extractions of p-type bandgap narrowing and the surface recombination for p- and n-type regions from these studies have a generality that extends beyond solar cells into basic device modeling. 68 refs., 50 figs.

Eosin Y-sensitized nanostructured SnO{sup 2}/TiO{sup 2} solar cells

Energy Technology Data Exchange (ETDEWEB)

Tai, Weon-Pil [Institute of Advanced Materials, Inha University, Yonghyun-dong, Nam-ku, Inchon 402-751 (South Korea); Inoue, Kozo [National Institute of Advanced Industrial Science and Technology, Tosu, Saga 841-0052 (Japan)

2003-02-01

The photoelectrochemical behaviors of eosin Y (organic dye)-sensitized nanostructured SnO{sub 2}/TiO{sub 2} coupled and SnO{sub 2}+TiO{sub 2} composite solar cells were studied. The value of incident photon-to-current conversion efficiency (IPCE) in the coupled system was higher than the composite system. A maximum IPCE value, 63%, was reached at 525 nm wavelength in the coupled cell with 3.5-{mu}m-thick SnO{sub 2} and 7-{mu}m-thick TiO{sub 2}. The IPCE difference in the coupled and composite cells sensitized by eosin Y dye is discussed.

Cu2ZnSnS4 solar cells: Physics and technology by alternative tracks

DEFF Research Database (Denmark)

Crovetto, Andrea

things: i) alternative solar absorbers (notably, Cu2SnS3) that are chemically related to CZTS and that have similar selling points; ii) other materials included in the device stack of CZTS solar cells. Here I list what I believe the main highlights of my work are. First, we achieve the highest reported...... power conversion eciency (5.2%) for a CZTS solar cell using pulsed laser deposition as a fabrication method for CZTS precursors. This is thanks to to joint work of PhD student Andrea Cazzaniga, PhD student Chang Yan (University of New South Wales, Australia) and myself. Perhaps more importantly, we...... finally understand, albeit very roughly, the "rules of the game" for successful pulsed laser deposition of high-quality chalcogenide precursors for solar cells. This kind of understanding is not evident in the existing literature and is mostly the result of the work of PhD student Andrea Cazzaniga. Second...

Dye-sensitized solar cells with vertically aligned TiO2 nanowire arrays grown on carbon fibers.

Science.gov (United States)

Cai, Xin; Wu, Hongwei; Hou, Shaocong; Peng, Ming; Yu, Xiao; Zou, Dechun

2014-02-01

One-dimensional semiconductor TiO2 nanowires (TNWs) have received widespread attention from solar cell and related optoelectronics scientists. The controllable synthesis of ordered TNW arrays on arbitrary substrates would benefit both fundamental research and practical applications. Herein, vertically aligned TNW arrays in situ grown on carbon fiber (CF) substrates through a facile, controllable, and seed-assisted thermal process is presented. Also, hierarchical TiO2 -nanoparticle/TNW arrays were prepared that favor both the dye loading and depressed charge recombination of the CF/TNW photoanode. An impressive conversion efficiency of 2.48 % (under air mass 1.5 global illumination) and an apparent efficiency of 4.18 % (with a diffuse board) due to the 3D light harvesting of the wire solar cell were achieved. Moreover, efficient and inexpensive wire solar cells made from all-CF electrodes and completely flexible CF-based wire solar cells were demonstrated, taking into account actual application requirements. This work may provide an intriguing avenue for the pursuit of lightweight, cost-effective, and high-performance flexible/wearable solar cells. Copyright © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Investigation of solar cell radiation damage

International Nuclear Information System (INIS)

Bernard, J.; Reulet, R.; Arndt, R.A.

1974-01-01

Development of communications satellites has led to the requirement for a greater and longer lived solar cell power source. Accordingly, studies have been undertaken with the aim of determining which solar cell array provides the greatest power at end of life and the amount of degradation. Investigation of the damage done to thin silicon and thin film CdS solar cells is being carried out in two steps. First, irradiations were performed singly with 0.15, 1.0 and 2.0MeV electrons and 0.7, 2.5 and 22MeV proton. Solar cells and their cover materials were irradiated separately in order to locate the sites of the damage. Diffusion length and I.V. characteristics of the cells and transmission properties of the cover materials were measured. All neasurements were made in vacuum immediately after irradiation. In the second part it is intended to study the effect of various combinations of proton, electron and photon irradiation both with and without an electrical load. The results of this part show whether synergism is involved in solar cell damage and the relative importance of each of three radiation sources if synergism is found [fr

Improving the photovoltaic performance of the all-solid-state TiO2 NR/CuInS2 solar cell by hydrogen plasma treatment

Science.gov (United States)

Chen, Bingfeng; Niu, Wenzhe; Lou, Zirui; Ye, Zhizhen; Zhu, Liping

2018-07-01

The interfacial properties of the heterojunction between p-type and n-type materials play an important role in the performance of the solar cell. In this paper, a p-type CuInS2 film was deposited on TiO2 nanorod arrays by spin coating to fabricate an all-solid-state solar cell and the TiO2 nanorod arrays were treated with hydrogen plasma(H:TiO2) to ameliorate the interfacial properties. The influence of the hydrogen plasma treatment on the performance of the solar cell was investigated. The short-circuit current density was obviously raised and the power conversion efficiency of the solar cell improved to 0.30%, which is three times that of solar cells without hydrogen plasma treatment. The enhancement of the performance is attributed to not only the enhancement of carrier separation and transport, but the reduction of the recombination of electrons and holes, which is caused by hydrogen plasma treatment.

Improving the photovoltaic performance of the all-solid-state TiO2 NR/CuInS2 solar cell by hydrogen plasma treatment.

Science.gov (United States)

Chen, Bingfeng; Niu, Wenzhe; Lou, Zirui; Ye, Zhizhen; Zhu, Liping

2018-07-06

The interfacial properties of the heterojunction between p-type and n-type materials play an important role in the performance of the solar cell. In this paper, a p-type CuInS 2 film was deposited on TiO 2 nanorod arrays by spin coating to fabricate an all-solid-state solar cell and the TiO 2 nanorod arrays were treated with hydrogen plasma(H:TiO 2 ) to ameliorate the interfacial properties. The influence of the hydrogen plasma treatment on the performance of the solar cell was investigated. The short-circuit current density was obviously raised and the power conversion efficiency of the solar cell improved to 0.30%, which is three times that of solar cells without hydrogen plasma treatment. The enhancement of the performance is attributed to not only the enhancement of carrier separation and transport, but the reduction of the recombination of electrons and holes, which is caused by hydrogen plasma treatment.

Predicted solar cell edge radiation effects

International Nuclear Information System (INIS)

Gates, M.T.

1993-01-01

The Advanced Solar Cell Orbital Test (ASCOT) will test six types of solar cells in a high energy proton environment. During the design of the experiment a question was raised about the effects of proton radiation incident on the edge of the solar cells and whether edge radiation shielding was required. Historical geosynchronous data indicated that edge radiation damage is not detectable over the normal end of life solar cell degradation; however because the ASCOT radiation environment has a much higher and more energetic fluence of protons, considerably more edge damage is expected. A computer analysis of the problem was made by modeling the expected radiation damage at the cell edge and using a network model of small interconnected solar cells to predict degradation in the cell's electrical output. The model indicated that the deepest penetration of edge radiation was at the top of the cell near the junction where the protons have access to the cell through the low density cell/cover adhesive layer. The network model indicated that the cells could tolerate high fluences at their edge as long as there was high electrical resistance between the edge radiated region and the contact system on top of the cell. The predicted edge radiation related loss was less than 2% of maximum power for GaAs/Ge solar cells. As a result, no edge radiation protection was used for ASCOT

Solution-processed In2S3 buffer layer for chalcopyrite thin film solar cells

Science.gov (United States)

Wang, Lan; Lin, Xianzhong; Ennaoui, Ahmed; Wolf, Christian; Lux-Steiner, Martha Ch.; Klenk, Reiner

2016-02-01

We report a route to deposit In2S3 thin films from air-stable, low-cost molecular precursor inks for Cd-free buffer layers in chalcopyrite-based thin film solar cells. Different precursor compositions and processing conditions were studied to define a reproducible and robust process. By adjusting the ink properties, this method can be applied in different printing and coating techniques. Here we report on two techniques, namely spin-coating and inkjet printing. Active area efficiencies of 12.8% and 12.2% have been achieved for In2S3-buffered solar cells respectively, matching the performance of CdS-buffered cells prepared with the same batch of absorbers.

CuIn{sub 1-x}Ga{sub x}Se{sub 2} photovoltaic devices for tandem solar cell application

Energy Technology Data Exchange (ETDEWEB)

Seyrling, S. [Thin Film Physics Group, Laboratory for Solid-State Physics, ETH Zuerich, Technopark, Technoparkstrasse 1, 8005 Zuerich (Switzerland)], E-mail: seyrling@phys.ethz.ch; Calnan, S. [Department of Electronic and Electrical Engineering, Loughborough University, Leicestershire, LE11 3TU (United Kingdom); Buecheler, S. [Thin Film Physics Group, Laboratory for Solid-State Physics, ETH Zuerich, Technopark, Technoparkstrasse 1, 8005 Zuerich (Switzerland); Huepkes, J. [Institut fuer Energieforschung, Photovoltaik, Forschungszentrum Juelich GmbH, 52425 Juelich (Germany); Wenger, S. [Laboratory of Photonics and Interfaces, Institute of Chemical Sciences and Engineering, School of Basic Sciences, EPF Lausanne, 1015 Lausanne (Switzerland); Bremaud, D.; Zogg, H. [Thin Film Physics Group, Laboratory for Solid-State Physics, ETH Zuerich, Technopark, Technoparkstrasse 1, 8005 Zuerich (Switzerland); Tiwari, A.N. [Thin Film Physics Group, Laboratory for Solid-State Physics, ETH Zuerich, Technopark, Technoparkstrasse 1, 8005 Zuerich (Switzerland); Department of Electronic and Electrical Engineering, Loughborough University, Leicestershire, LE11 3TU (United Kingdom)

2009-02-02

CuIn{sub 1-x}Ga{sub x}Se{sub 2} (CIGS) solar cells show a good spectral response in a wide range of the solar spectrum and the bandgap of CIGS can be adjusted from 1.0 eV to 1.7 eV by increasing the gallium-to-indium ratio of the absorber. While the bandgaps of Ga-rich CIGS or CGS devices make them suitable for top or intermediate cells, the In rich CIGS or CIS devices are well suited to be used as bottom cells in tandem solar cells. The photocurrent can be adapted to the desired value for current matching in tandem cells by changing the composition of CIGS which influences the absorption characteristics. Therefore, CIGS layers with different [Ga]/[In + Ga] ratios were grown on Mo and ZnO:Al coated glass substrates. The grain size, composition of the layers, and morphology strongly depend on the Ga content. Layers with Ga rich composition exhibit smaller grain size and poor photovoltaic performance. The current densities of CIGS solar cells on ZnO:Al/glass varied from 29 mA cm{sup -2} to 13 mA cm{sup -2} depending on the Ga content, and 13.5% efficient cells were achieved using a low temperature process (450 deg. C ). However, Ga-rich solar cells exhibit lower transmission than dye sensitized solar cells (DSC). Prospects of tandem solar cells combining a DSC with CIGS are presented.

Low-cost transparent solar cells: Potential of TiO2 nanotubes in the improvement of these next generation solar cells

CSIR Research Space (South Africa)

Cummings, F

2010-09-01

Full Text Available This paper provides a background to photovoltaics, and goes on to discuss dye-sensitised solar cell research and development at the CSIR. An overview of TiO2 nanotube synthesis is given, followed by the discussing the manufacturing process of dye...

Light-trapping in perovskite solar cells

Directory of Open Access Journals (Sweden)

Qing Guo Du

2016-06-01

Full Text Available We numerically demonstrate enhanced light harvesting efficiency in both CH3NH3PbI3 and CH(NH22PbI3-based perovskite solar cells using inverted vertical-cone photonic-crystal nanostructures. For CH3NH3PbI3 perovskite solar cells, the maximum achievable photocurrent density (MAPD reaches 25.1 mA/cm2, corresponding to 92% of the total available photocurrent in the absorption range of 300 nm to 800 nm. Our cell shows 6% absorption enhancement compared to the Lambertian limit (23.7 mA/cm2 and has a projected power conversion efficiency of 12.9%. Excellent solar absorption is numerically demonstrated over a broad angular range from 0 to 60 degree for both S- and P- polarizations. For the corresponding CH(NH22PbI3 based perovskite solar cell, with absorption range of 300 nm to 850 nm, we find a MAPD of 29.1 mA/cm2, corresponding to 95.4% of the total available photocurrent. The projected power conversion efficiency of the CH(NH22PbI3 based photonic crystal solar cell is 23.4%, well above the current world record efficiency of 20.1%.

Thermal management approaches of Cu(Inx, Ga1−x)Se2 micro-solar cells

International Nuclear Information System (INIS)

Sancho-Martínez, Diego; Schmid, Martina

2017-01-01

Concentrator photovoltaics (CPV) is a cost-effective method for generating electricity in regions that have a large fraction of direct solar radiation. With the help of lenses, sunlight is concentrated onto miniature, highly efficient multi-junction solar cells with a photovoltaic performance above 40%. To ensure illumination with direct radiation, CPV modules must be installed on trackers to follow the sun’s path. However, the costs of huge concentration optics and the photovoltaic technology used, narrow the market possibilities for CPV technology. Efforts to reduce these costs are being undertaken by the promotion of Cu(In x ,Ga 1−x )Se 2 solar cells to take over the high cost multi-junction solar cells and implementing more compact devices by minimization of solar cell area. Micrometer-sized absorbers have the potential of low cost, high efficiencies and good thermal dissipation under concentrated illumination. Heat dissipation at low (<10×) to medium (10  ×  to 100×) flux density distributions is the key point of high concentration studies for macro- and micro-sized solar cells (from 1 µ m 2 to 1 mm 2 ). To study this thermal process and to optimize it, critical parameters must be taken in account: absorber area, substrate area and thickness, structure design, heat transfer mechanism, concentration factor and illumination profile. A close study on them will be carried out to determine the best structure to enhance and reach the highest possible thermal management pointing to an efficiency improvement. (paper)

Four-cell solar tracker

Science.gov (United States)

Berdahl, C. M.

1981-01-01

Forty cm Sun tracker, consisting of optical telescope and four solar cells, stays pointed at Sun throughout day for maximum energy collection. Each solar cell generates voltage proportional to part of solar image it receives; voltages drive servomotors that keep image centered. Mirrored portion of cylinder extends acquisition angle of device by reflecting Sun image back onto solar cells.

Nanoscale observation of surface potential and carrier transport in Cu2ZnSn(S,Se)4 thin films grown by sputtering-based two-step process.

Science.gov (United States)

Kim, Gee Yeong; Kim, Ju Ri; Jo, William; Son, Dae-Ho; Kim, Dae-Hwan; Kang, Jin-Kyu

2014-01-08

Stacked precursors of Cu-Zn-Sn-S were grown by radio frequency sputtering and annealed in a furnace with Se metals to form thin-film solar cell materials of Cu2ZnSn(S,Se)4 (CZTSSe). The samples have different absorber layer thickness of 1 to 2 μm and show conversion efficiencies up to 8.06%. Conductive atomic force microscopy and Kelvin probe force microscopy were used to explore the local electrical properties of the surface of CZTSSe thin films. The high-efficiency CZTSSe thin film exhibits significantly positive bending of surface potential around the grain boundaries. Dominant current paths along the grain boundaries are also observed. The surface electrical parameters of potential and current lead to potential solar cell applications using CZTSSe thin films, which may be an alternative choice of Cu(In,Ga)Se2.PACS number: 08.37.-d; 61.72.Mm; 71.35.-y.

Nanocrystal Solar Cells

Energy Technology Data Exchange (ETDEWEB)

Gur, Ilan [Univ. of California, Berkeley, CA (United States)

2006-01-01

This dissertation presents the results of a research agenda aimed at improving integration and stability in nanocrystal-based solar cells through advances in active materials and device architectures. The introduction of 3-dimensional nanocrystals illustrates the potential for improving transport and percolation in hybrid solar cells and enables novel fabrication methods for optimizing integration in these systems. Fabricating cells by sequential deposition allows for solution-based assembly of hybrid composites with controlled and well-characterized dispersion and electrode contact. Hyperbranched nanocrystals emerge as a nearly ideal building block for hybrid cells, allowing the controlled morphologies targeted by templated approaches to be achieved in an easily fabricated solution-cast device. In addition to offering practical benefits to device processing, these approaches offer fundamental insight into the operation of hybrid solar cells, shedding light on key phenomena such as the roles of electrode-contact and percolation behavior in these cells. Finally, all-inorganic nanocrystal solar cells are presented as a wholly new cell concept, illustrating that donor-acceptor charge transfer and directed carrier diffusion can be utilized in a system with no organic components, and that nanocrystals may act as building blocks for efficient, stable, and low-cost thin-film solar cells.

Mn-doped CdS quantum dots sensitized hierarchical TiO2 flower-rod for solar cell application

International Nuclear Information System (INIS)

Yu, Libo; Li, Zhen; Liu, Yingbo; Cheng, Fa; Sun, Shuqing

2014-01-01

A double-layered TiO 2 film which three dimensional (3D) flowers grown on highly ordered self-assembled one dimensional (1D) TiO 2 nanorods was synthesized directly on transparent fluorine-doped tin oxide (FTO) conducting glass substrate by a facile hydrothermal method and was applied as photoanode in Mn-doped CdS quantum dots sensitized solar cells (QDSSCs). The 3D TiO 2 flowers with the increased surface areas can adsorb more QDs, which increased the absorption of light; meanwhile 1D TiO 2 nanorods beneath the flowers offered a direct electrical pathway for photogenerated electrons, accelerating the electron transfer rate. A typical type II band alignment which can effectively separate photogenerated excitons and reduce recombination of electrons and holes was constructed by Mn-doped CdS QDs and TiO 2 flower-rod. The incident photon-to-current conversion efficiency (IPCE) of the Mn-doped CdS/TiO 2 flower-rod solar cell reached to 40% with the polysulfide electrolyte filled in the solar cell. The power conversion efficiency (PCE) of 1.09% was obtained with the Mn-doped CdS/TiO 2 flower-rod solar cell under one sun illumination (AM 1.5G, 100 mW/cm 2 ), which is 105.7% higher than that of the CdS/TiO 2 nanorod solar cell (0.53%).

A hybrid tandem solar cell based on hydrogenated amorphous silicon and dye-sensitized TiO{sub 2} film

Energy Technology Data Exchange (ETDEWEB)

Hao Sancun [Institute of Materials Physical Chemistry, Huaqiao University, Quanzhou, 362021 (China); Institute of Photo-Electronics of Nankai University, Tianjin 300071 (China); Jiangsu Shuangdeng Group Co. Ltd, Thaizhou, Jiangsu, 225526 (China); Wu Jihuai, E-mail: jhwu@hqu.edu.cn [Institute of Materials Physical Chemistry, Huaqiao University, Quanzhou, 362021 (China); Sun Zhonglin [Institute of Photo-Electronics of Nankai University, Tianjin 300071 (China)

2012-01-01

Hydrogenated amorphous silicon film (a-Si:H) as top cell is introduced to dye-sensitized titanium dioxide nanocrystalline solar cell (DSSC) as bottom cell to assemble a hybrid tandem solar cell. The hybrid tandem solar cell fabricated with the thicknesses a-Si:H layer of 235 nm, ZnO/Pt interlayer of 100 nm and DSSC layer of 8.5 {mu}m achieves a photo-to-electric energy conversion efficiency of 8.31%, a short circuit current density of 10.61 mA{center_dot}cm{sup -2} and an open-circuit voltage of 1.45 V under a simulated solar light irradiation of 100 mW{center_dot}cm{sup -2}.

ZnSe passivation layer for the efficiency enhancement of CuInS{sub 2} quantum dots sensitized solar cells

Energy Technology Data Exchange (ETDEWEB)

Peng, Zhuoyin; Liu, Yueli; Zhao, Yinghan; Chen, Keqiang; Cheng, Yuqing [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, School of Materials Science and Engineering, Wuhan University of Technology, Wuhan 430070 (China); Kovalev, Valery [Department of Mechanics and Mathematics, Moscow State University named after M.V. Lomonosov, Leninskie Gory 1, 119992 Moscow (Russian Federation); Chen, Wen, E-mail: chenw@whut.edu.cn [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, School of Materials Science and Engineering, Wuhan University of Technology, Wuhan 430070 (China)

2014-02-25

Highlights: • ZnSe is employed as passivation layer in CuInS{sub 2} quantum dots sensitized solar cells. • Slight red-shift has been occurred in UV–vis absorption spectra with ZnSe coating. • CuInS{sub 2} based solar cells coated by ZnSe have better efficiency than that of ZnS. • Higher rate of charge transport can be produced after coating with ZnSe. -- Abstract: The effect of ZnSe passivation layer is investigated in the CuInS{sub 2} quantum dot sensitized solar cells, which is used to improve the photovoltaic performance. The CuInS{sub 2} quantum dot sensitized TiO{sub 2} photo-anodes are prepared by assembly linking technique, and then deposited by the ZnSe passivation layer using the successive ionic layer absorption and reaction technique. The optical absorption edge and photoluminescence peak have slightly red-shifted after the passivation layer coating. Under solar light illumination, the ZnSe passivation layer based CuInS{sub 2} quantum dot sensitized solar cells have the higher photovoltaic efficiency of 0.95% and incident photon conversion efficiency response than that of pure CuInS{sub 2} based solar cells and ZnS passivation layer based solar cells, as the electron injection rate becomes faster after coating with ZnSe passivation layer.

What is the band alignment of Cu2ZnSn(S,Se)4 solar cells?

DEFF Research Database (Denmark)

Crovetto, Andrea; Hansen, Ole

2017-01-01

The band alignment at the Cu2ZnSn(S,Se)4/CdS solar cell heterojunction is a controversial issue, as different measurements and calculations point to substantially different conduction band offsets (CBO). As the actual value of the CBO has profound implications on solar cell performance, the aim...... of this work is to separate genuine process-dependent variations in the CBO from errors in its experimental determination. We argue that the two most likely mechanisms responsible for real CBO variations are Fermi level pinning (which tends to decrease the CBO) and chemical interdiffusion (which tends...... measurement approaches. Interestingly, a rough correlation can be established between the CBO measured at the Cu2ZnSnS4/CdS interface by different groups and their corresponding solar cell efficiency: lower-efficiency cells often have a large "cliff-like" offset, whereas most high-efficiency cells have...

AlGaAs top solar cell for mechanical attachment in a multi-junction tandem concentrator solar cell stack

Science.gov (United States)

Dinetta, L. C.; Hannon, M. H.; Cummings, J. R.; Mcneeley, J. B.; Barnett, Allen M.

1990-01-01

Free-standing, transparent, tunable bandgap AlxGa1-xAs top solar cells have been fabricated for mechanical attachment in a four terminal tandem stack solar cell. Evaluation of the device results has demonstrated 1.80 eV top solar cells with efficiencies of 18 percent (100 X, and AM0) which would yield stack efficiencies of 31 percent (100 X, AM0) with a silicon bottom cell. When fully developed, the AlxGa1-xAs/Si mechanically-stacked two-junction solar cell concentrator system can provide efficiencies of 36 percent (AM0, 100 X). AlxGa1-xAs top solar cells with bandgaps from 1.66 eV to 2.08 eV have been fabricated. Liquid phase epitaxy (LPE) growth techniques have been used and LPE has been found to yield superior AlxGa1-xAs material when compared to molecular beam epitaxy and metal-organic chemical vapor deposition. It is projected that stack assembly technology will be readily applicable to any mechanically stacked multijunction (MSMJ) system. Development of a wide bandgap top solar cell is the only feasible method for obtaining stack efficiencies greater than 40 percent at AM0. System efficiencies of greater than 40 percent can be realized when the AlGaAs top solar cell is used in a three solar cell mechanical stack.

Magnetron sputtering fabrication and photoelectric properties of WSe2 film solar cell device

Science.gov (United States)

Mao, Xu; Zou, Jianpeng; Li, Hongchao; Song, Zhengqi; He, Siru

2018-06-01

Tungsten diselenide (WSe2) films with different growing orientations exhibit diverse photoelectric properties. The WSe2 film with C-axis⊥substrate texture has been prepared and applied to thin-film solar cells. W nanofilms with a thickness of 270 nm were deposited onto the Mo bottom electrode and then heat-treated in selenium vapor to synthesize WSe2 films with a thickness of 1 μm. ZnO films were deposited onto WSe2 films to form a P-N junction and ITO films were deposited subsequently as the conductive layer. X-ray diffractometry, scanning electron microscopy and UV-vis-NIR spectro-analysis instrument were employed to analyze the phase composition, optical absorptivity and micromorphology of WSe2 films and the WSe2 solar cell device. WSe2 films exhibit excellent photoelectric performance with an optical absorption coefficient greater than 105 cm-1 across the visible spectrum. The calculated direct and indirect band gap of the WSe2 films is 1.48 eV and 1.25 eV, respectively. With the application of standard glass/Mo/WSe2/ZnO/ITO/Ag device structure, the open-circuit voltage of the battery device is 82 mV. The short-circuit current density is 2.98 mA/cm2 and the filling factor is 0.32. The photoelectric conversion efficiency of the WSe2 film solar cell device is 0.79%.

Development of large area, high efficiency amorphous silicon solar cell

Energy Technology Data Exchange (ETDEWEB)

Yoon, K.S.; Kim, S.; Kim, D.W. [Yu Kong Taedok Institute of Technology (Korea, Republic of)

1996-02-01

The objective of the research is to develop the mass-production technologies of high efficiency amorphous silicon solar cells in order to reduce the costs of solar cells and dissemination of solar cells. Amorphous silicon solar cell is the most promising option of thin film solar cells which are relatively easy to reduce the costs. The final goal of the research is to develop amorphous silicon solar cells having the efficiency of 10%, the ratio of light-induced degradation 15% in the area of 1200 cm{sup 2} and test the cells in the form of 2 Kw grid-connected photovoltaic system. (author) 35 refs., 8 tabs., 67 figs.

Dye solar cells: a different approach to solar energy

CSIR Research Space (South Africa)

Le Roux, Lukas J

2008-11-01

Full Text Available An attractive and cheaper alternative to siliconbased photovoltaic (PV) cells for the conversion of solar light into electrical energy is to utilise dyeadsorbed, large-band-gap metal oxide materials such as TiO2 to absorb the solar light...

Dye-sensitized solar cells and solar module using polymer electrolytes: Stability and performance investigations

Directory of Open Access Journals (Sweden)

Jilian Nei de Freitas

2006-01-01

Full Text Available We present recent results on solid-state dye-sensitized solar cell research using a polymer electrolyte based on a poly(ethylene oxide derivative. The stability and performance of the devices have been improved by a modification in the method of assembly of the cells and by the addition of plasticizers in the electrolyte. After 30 days of solar irradiation (100 mW cm-2 no changes in the cell's efficiency were observed using this new method. The effect of the active area size on cell performance and the first results obtained for the first solar module composed of 4.5 cm2 solid-state solar cells are also presented.

Acceptable contamination levels in solar grade silicon: From feedstock to solar cell

International Nuclear Information System (INIS)

Hofstetter, J.; Lelievre, J.F.; Canizo, C.; Luque, A. del

2009-01-01

Ultimately, alternative ways of silicon purification for photovoltaic applications are developed and applied. There is an ongoing debate about what are the acceptable contamination levels within the purified silicon feedstock to specify the material as solar grade silicon. Applying a simple model and making some additional assumptions, we calculate the acceptable contamination levels of different characteristic impurities for each fabrication step of a typical industrial mc-Si solar cell. The acceptable impurity concentrations within the finished solar cell are calculated for SRH recombination exclusively and under low injection conditions. It is assumed that during solar cell fabrication impurity concentrations are only altered by a gettering step. During the crystallization process, impurity segregation at the solid-liquid interface and at extended defects are taken into account. Finally, the initial contamination levels allowed within the feedstock are deduced. The acceptable concentration of iron in the finished solar cell is determined to be 9.7x10 -3 ppma whereas the concentration in the silicon feedstock can be as high as 12.5 ppma. In comparison, the titanium concentration admitted in the solar cell is calculated to be 2.7x10 -4 ppma and the allowed concentration of 2.2x10 -2 ppma in the feedstock is only two orders of magnitude higher. Finally, it is shown theoretically and experimentally that slow cooling rates can lead to a decrease of the interstitial Fe concentration and thus relax the purity requirements in the feedstock.

Photovoltaic solar cell

Science.gov (United States)

Nielson, Gregory N; Okandan, Murat; Cruz-Campa, Jose Luis; Resnick, Paul J

2013-11-26

A photovoltaic solar cell for generating electricity from sunlight is disclosed. The photovoltaic solar cell comprises a plurality of spaced-apart point contact junctions formed in a semiconductor body to receive the sunlight and generate the electicity therefrom, the plurality of spaced-apart point contact junctions having a first plurality of regions having a first doping type and a second plurality of regions having a second doping type. In addition, the photovoltaic solar cell comprises a first electrical contact electrically connected to each of the first plurality of regions and a second electrical contact electrically connected to each of the second plurality of regions, as well as a passivation layer covering major surfaces and sidewalls of the photovoltaic solar cell.

Solution-processed In2S3 buffer layer for chalcopyrite thin film solar cells

Directory of Open Access Journals (Sweden)

Wang Lan

2016-01-01

Full Text Available We report a route to deposit In2S3 thin films from air-stable, low-cost molecular precursor inks for Cd-free buffer layers in chalcopyrite-based thin film solar cells. Different precursor compositions and processing conditions were studied to define a reproducible and robust process. By adjusting the ink properties, this method can be applied in different printing and coating techniques. Here we report on two techniques, namely spin-coating and inkjet printing. Active area efficiencies of 12.8% and 12.2% have been achieved for In2S3-buffered solar cells respectively, matching the performance of CdS-buffered cells prepared with the same batch of absorbers.

Self-assembly 2D zinc-phthalocyanine heterojunction: An ideal platform for high efficiency solar cell

Science.gov (United States)

Jiang, Xue; Jiang, Zhou; Zhao, Jijun

2017-12-01

As an alternative to silicon-based solar cells, organic photovoltaic cells emerge for their easy manufacture, low cost, and light weight but are limited by their less stability, low power conversion efficiencies, and low charge carrier mobilities. Here, we design a series of two-dimensional (2D) organic materials incorporating zinc-phthalocyanine (ZnPc) based building blocks which can inherit their excellent intrinsic properties but overcome those shortcomings. Our first-principles calculation shows that such 2D ZnPc-based materials exhibit excellent thermal stabilities, suitable bandgaps, small effective masses, and good absorption properties. The additional benzene rings and nitrogen atoms incorporated between ZnPc molecules are mainly responsible for the modifications of electronic and optical properties. Moreover, some heterojunction solar cells constructed using those 2D ZnPc monolayers as the donor and acceptor have an appropriate absorber gap and interface band alignment. Among them, a power conversion efficiency up to 14.04% is achieved, which is very promising for the next-generation organic solar cells.

The Cu2ZnSnSe4 thin films solar cells synthesized by electrodeposition route

Science.gov (United States)

Li, Ji; Ma, Tuteng; Wei, Ming; Liu, Weifeng; Jiang, Guoshun; Zhu, Changfei

2012-06-01

An electrodeposition route for preparing Cu2ZnSnSe4 thin films for thin film solar cell absorber layers is demonstrated. The Cu2ZnSnSe4 thin films are prepared by co-electrodeposition Cu-Zn-Sn metallic precursor and subsequently annealing in element selenium atmosphere. The structure, composition and optical properties of the films were investigated by X-ray diffraction (XRD), Raman spectrometry, energy dispersive spectrometry (EDS) and UV-VIS absorption spectroscopy. The Cu2ZnSnSe4 thin film with high crystalline quality was obtained, the band gap and absorption coefficient were 1.0 eV and 10-4 cm-1, which is quite suitable for solar cells fabrication. A solar cell with the structure of ZnO:Al/i-ZnO/CdS/Cu2ZnSnSe4/Mo/glass was fabricated and achieved an conversion efficiency of 1.7%.

Highly efficient light management for perovskite solar cells.

Science.gov (United States)

Wang, Dong-Lin; Cui, Hui-Juan; Hou, Guo-Jiao; Zhu, Zhen-Gang; Yan, Qing-Bo; Su, Gang

2016-01-06

Organic-inorganic halide perovskite solar cells have enormous potential to impact the existing photovoltaic industry. As realizing a higher conversion efficiency of the solar cell is still the most crucial task, a great number of schemes were proposed to minimize the carrier loss by optimizing the electrical properties of the perovskite solar cells. Here, we focus on another significant aspect that is to minimize the light loss by optimizing the light management to gain a high efficiency for perovskite solar cells. In our scheme, the slotted and inverted prism structured SiO2 layers are adopted to trap more light into the solar cells, and a better transparent conducting oxide layer is employed to reduce the parasitic absorption. For such an implementation, the efficiency and the serviceable angle of the perovskite solar cell can be promoted impressively. This proposal would shed new light on developing the high-performance perovskite solar cells.

Theoretical limits of the multistacked 1D and 2D microstructured inorganic solar cells

Science.gov (United States)

Yengel, Emre; Karaagac, Hakan; VJ, Logeeswaran; Islam, M. Saif

2015-09-01

Recent studies in monocrystalline semiconductor solar cells are focused on mechanically stacking multiple cells from different materials to increase the power conversion efficiency. Although, the results show promising increase in the device performance, the cost remains as the main drawback. In this study, we calculated the theoretical limits of multistacked 1D and 2D microstructered inorganic monocrstalline solar cells. This system is studied for Si and Ge material pair. The results show promising improvements in the surface reflection due to enhanced light trapping caused by photon-microstructures interactions. The theoretical results are also supported with surface reflection and angular dependent power conversion efficiency measurements of 2D axial microwall solar cells. We address the challenge of cost reduction by proposing to use our recently reported mass-manufacturable fracture-transfer- printing method which enables the use of a monocrystalline substrate wafer for repeated fabrication of devices by consuming only few microns of materials in each layer of devices. We calculated thickness dependent power conversion efficiencies of multistacked Si/Ge microstructured solar cells and found the power conversion efficiency to saturate at 26% with a combined device thickness of 30 μm. Besides having benefits of fabricating low-cost, light weight, flexible, semi-transparent, and highly efficient devices, the proposed fabrication method is applicable for other III-V materials and compounds to further increase the power conversion efficiency above 35% range.

Improved conversion efficiency of dye sensitized solar cell using Zn doped TiO_2-ZrO_2 nanocomposite

International Nuclear Information System (INIS)

Tomar, Laxmi J.; Bhatt, Piyush J.; Desai, Rahul K.; Chakrabarty, B. S.; Panchal, C. J.

2016-01-01

TiO_2-ZrO_2 and Zn doped TiO_2-ZrO_2 nanocomposites were prepared by hydrothermal method for dye sensitized solar cell (DSSC) application. The structural and optical properties were investigated by X –ray diffraction (XRD) and UV-Visible spectroscopy respectively. XRD results revealed the formation of material in nano size. The average crystallite size is 22.32 nm, 17.41 nm and 6.31 nm for TiO_2, TiO_2-ZrO_2 and Zn doped TiO_2-ZrO_2 nanocomposites respectively. The optical bandgap varies from 2.04 eV to 3.75 eV. Dye sensitized solar cells were fabricated using the prepared material. Pomegranate juice was used as a sensitizer and graphite coated conducting glass plate was used as counter electrode. The I – V characteristics were recorded to measure photo response of DSSC. Photovoltaic parameter like open circuit voltage, power conversion efficiency, and fill factor were evaluated for fabricated solar cell. The power conversion efficiency of DSSC fabricated with TiO_2, TiO_2-ZrO_2 and Zn doped TiO_2-ZrO_2 nanocomposites were found 0.71%, 1.97% and 4.58% respectively.

Improved conversion efficiency of dye sensitized solar cell using Zn doped TiO2-ZrO2 nanocomposite

Science.gov (United States)

Tomar, Laxmi J.; Bhatt, Piyush J.; Desai, Rahul K.; Chakrabarty, B. S.; Panchal, C. J.

2016-05-01

TiO2-ZrO2 and Zn doped TiO2-ZrO2 nanocomposites were prepared by hydrothermal method for dye sensitized solar cell (DSSC) application. The structural and optical properties were investigated by X -ray diffraction (XRD) and UV-Visible spectroscopy respectively. XRD results revealed the formation of material in nano size. The average crystallite size is 22.32 nm, 17.41 nm and 6.31 nm for TiO2, TiO2-ZrO2 and Zn doped TiO2-ZrO2 nanocomposites respectively. The optical bandgap varies from 2.04 eV to 3.75 eV. Dye sensitized solar cells were fabricated using the prepared material. Pomegranate juice was used as a sensitizer and graphite coated conducting glass plate was used as counter electrode. The I - V characteristics were recorded to measure photo response of DSSC. Photovoltaic parameter like open circuit voltage, power conversion efficiency, and fill factor were evaluated for fabricated solar cell. The power conversion efficiency of DSSC fabricated with TiO2, TiO2-ZrO2 and Zn doped TiO2-ZrO2 nanocomposites were found 0.71%, 1.97% and 4.58% respectively.

Optimization of hybrid organic/inorganic poly(3-hexylthiophene-2,5-diyl)/silicon solar cells

Science.gov (United States)

Weingarten, Martin; Sanders, Simon; Stümmler, Dominik; Pfeiffer, Pascal; Vescan, Andrei; Kalisch, Holger

2016-04-01

In the last years, hybrid organic/silicon solar cells have attracted great interest in photovoltaic research due to their potential to become a low-cost alternative for the conventionally used silicon pn-junction solar cells. This work is focused on hybrid solar cells based on the polymer poly(3-hexylthiophene-2,5-diyl), which was deposited on n-doped crystalline silicon via spin-coating under ambient conditions. By employing an anisotropic etching step with potassium hydroxide (KOH), the reflection losses at the silicon surface were reduced. Hereby, the short-circuit current density of the hybrid devices was increased by 31%, leading to a maximum power conversion efficiency (PCE) of 13.1% compared to a PCE of 10.7% for the devices without KOH etching. In addition, the contacts were improved by replacing gold with the more conductive silver as top grid material to reduce the contact resistance and by introducing a thin (˜0.5 nm) lithium fluoride layer between the silicon and the aluminum backside contact to improve electron collection and hole blocking. Hereby, the open-circuit voltage and the fill factor of the hybrid solar cells were further improved and devices with very high PCE up to 14.2% have been realized.

TiO2-Anatase Nanowire Dispersed Composite Electrode for Dye-Sensitized Solar Cells

International Nuclear Information System (INIS)

Asagoe, K; Suzuki, Y; Ngamsinlapasathian, S; Yoshikawa, S

2007-01-01

TiO 2 anatase nanowires have been prepared by a hydrothermal process followed by post-heat treatment in air. TiO 2 nanoparticle/TiO 2 nanowire composite electrodes were prepared for dye-sensitized solar cells (DSC) in order to improve light-to-electricity conversion efficiency. The TiO 2 NP/TiO 2 NW composite cells showed higher DSC performance than ordinary nanoparticle cells and fully nanowire cells: efficiency (η = 6.53 % for DSC with 10% nanowire, whereas 5.59% for 0% nanowire, and 2.42% for 100% nanowire

Enhanced monolayer MoS2/InP heterostructure solar cells by graphene quantum dots

Science.gov (United States)

Wang, Peng; Lin, Shisheng; Ding, Guqiao; Li, Xiaoqiang; Wu, Zhiqian; Zhang, Shengjiao; Xu, Zhijuan; Xu, Sen; Lu, Yanghua; Xu, Wenli; Zheng, Zheyang

2016-04-01

We demonstrate significantly improved photovoltaic response of monolayer molybdenum disulfide (MoS2)/indium phosphide (InP) van der Waals heterostructure induced by graphene quantum dots (GQDs). Raman and photoluminescence measurements indicate that effective charge transfer takes place between GQDs and MoS2, which results in n-type doping of MoS2. The doping effect increases the barrier height at the MoS2/InP heterojunction, thus the averaged power conversion efficiency of MoS2/InP solar cells is improved from 2.1% to 4.1%. The light induced doping by GQD provides a feasible way for developing more efficient MoS2 based heterostructure solar cells.

Low temperature fabrication of perovskite solar cells with TiO{sub 2} nanoparticle layers

Energy Technology Data Exchange (ETDEWEB)

Kanayama, Masato; Oku, Takeo, E-mail: oku@mat.usp.ac.jp; Suzuki, Atsushi [Department of Materials Science, The University of Shiga Prefecture, 2500 Hassaka, Hikone, Shiga 522-8533 (Japan); Yamada, Masahiro; Sakamoto, Hiroki [Energy Technology Laboratories, Osaka Gas Co., Ltd., Osaka 554-0051 (Japan); Minami, Satoshi; Kohno, Kazufumi [Frontier Materials Laboratories, Osaka Gas Chemicals Co., Ltd., Osaka 554-0051 (Japan)

2016-02-01

TiO{sub 2}/CH{sub 3}NH{sub 3}PbI{sub 3}-based photovoltaic devices were fabricated by a spin-coating method using a mixture solution. TiO{sub 2} require high-temperature processing to achieve suitably high carrier mobility. TiO{sub 2} electron transport layers and TiO{sub 2} scaffold layers for the perovskite were fabricated from TiO{sub 2} nanoparticles with different grain sizes. The photovoltaic properties and microstructures of solar cells were characterized. Nanoparticle sizes of these TiO{sub 2} were 23 nm and 3 nm and the performance of solar cells was improved by combination of two TiO{sub 2} nanoparticles.

Compound polycrystalline solar cells. Recent progress and Y2K perspective

Energy Technology Data Exchange (ETDEWEB)

Birkmire, R.W. [Institute of Energy Conversion, University of Delaware, DE 19716 Newark (United States)

2001-01-01

A historical perspective on the development of polycrystalline thin-film solar cells based on CdTe and CuInSe{sub 2} is presented, and recent progress of these thin-film technologies is discussed. Impressive improvements in the efficiency of laboratory scale devices has not been easy to translate to the manufacturing environment, principally due to our lack of understanding of the basic science and engineering of these materials and devices. 'Next-generation' high-performance thin-film solar cells utilizing multijunction device configurations should achieve efficiencies of more than 25% within ten years. However, our cost-effective manufacturing of these more complex devices will be problematic unless the science and engineering issues associated with processing of thin-film PV devices are addressed.

Ultra-thin Cu2ZnSnS4 solar cell by pulsed laser deposition

DEFF Research Database (Denmark)

Cazzaniga, Andrea Carlo; Crovetto, Andrea; Yan, Chang

2017-01-01

We report on the fabrication of a 5.2% efficiency Cu2ZnSnS4 (CZTS) solar cell made by pulsed laser deposition (PLD) featuring an ultra-thin absorber layer (less than 450 nm). Solutions to the issues of reproducibility and micro-particulate ejection often encountered with PLD are proposed. At the ......We report on the fabrication of a 5.2% efficiency Cu2ZnSnS4 (CZTS) solar cell made by pulsed laser deposition (PLD) featuring an ultra-thin absorber layer (less than 450 nm). Solutions to the issues of reproducibility and micro-particulate ejection often encountered with PLD are proposed...

Rectenna solar cells

CERN Document Server

Moddel, Garret

2013-01-01

Rectenna Solar Cells discusses antenna-coupled diode solar cells, an emerging technology that has the potential to provide ultra-high efficiency, low-cost solar energy conversion. This book will provide an overview of solar rectennas, and provide thorough descriptions of the two main components: the diode, and the optical antenna. The editors discuss the science, design, modeling, and manufacturing of the antennas coupled with the diodes. The book will provide concepts to understanding the challenges, fabrication technologies, and materials required to develop rectenna structures. Written by e

Influence of carrier concentration on the performance of CIAS solar cell

Science.gov (United States)

Patel, Kinjal; Ray, Jaymin

2018-05-01

Photovoltaic research has moved beyond the use of single crystalline materials such as Group IV elemental Si and Group III-V compounds like GaAs to much more complex compounds of the Group I-III-VI2 with chalcopyrite structure. The ternary ABC2 chalcopyrites (A=Cu; B=In, Ga or Al; C= S, Se or Te) form a large group of semiconducting materials with diverse structural and electrical properties. These materials are attractive for thin film photovoltaic application for a number of reasons. The bandgap of CuInSe2 is relatively low, 1.04 eV, but it can be adjusted to better match the solar spectrum either by substituting part of In by Ga or part of Se by S. Most reported and popular Cu(In,Ga)Se2 (CIGS) is one of its derivative. Efficiency of the CIGS devices with Eg >1.3 eV is reduced by the degradation of the electronic properties of the absorber leading to losses in the fill-factor and the open-circuit voltage. Alternatively, the performance can be improved by the addition of Al to form CuInAlSe2 (CIAS) absorber layers with an increase in the bandgap energy, which matches closely with the solar spectrum. In the present work an effort was made in the direction of improving the conversion efficiency by studying the influence of carrier concentration. SCAPS simulation program is used to simulate the CIAS structure numerically. The obtained results intended the significant variation in the values of conversion efficiency. Variation in the efficiency can be considered because of the relation optical absorption and carrier concentration. Observed highest efficiency is 10 %, which can be further improved by considering actual parameters of the device as well as the operating condition.

Piper Ornatum and Piper Betle as Organic Dyes for TiO2 and SnO2 Dye Sensitized Solar Cells

Science.gov (United States)

Hayat, Azwar; Putra, A. Erwin E.; Amaliyah, Novriany; Hayase, Shuzi; Pandey, Shyam. S.

2018-03-01

Dye sensitized solar cell (DSSC) mimics the principle of natural photosynthesis are now currently investigated due to low manufacturing cost as compared to silicon based solar cells. In this report, we utilized Piper ornatum (PO) and Piper betle (PB) as sensitizer to fabricate low cost DSSCs. We compared the photovoltaic performance of both sensitizers with Titanium dioxide (TiO2) and Tin dioxide (SnO2) semiconductors. The results show that PO and PB dyes have higher Short circuit current (Jsc) when applied in SnO2 compared to standard TiO2 photo-anode film even though the Open circuit voltage (Voc) was hampered on SnO2 device. In conclusion, from the result, higher electron injections can be achieved by choosing appropriate semiconductors with band gap that match with dyes energy level as one of strategy for further low cost solar cell.

Effect of TiO{sub 2} nanopatterns on the performance of hydrogenated amorphous silicon thin-film solar cells

Energy Technology Data Exchange (ETDEWEB)

Oh, Joon-Ho [Department of Materials Science and Engineering, Korea University, Seoul 136-713 (Korea, Republic of); Yang, Ji-Hwan; Lim, Koeng Su [Department of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon 305-701 (Korea, Republic of); Han, Kang-Soo; Kim, Yang-Doo; Lee, Heon; Song, Jun-Hyuk [Department of Materials Science and Engineering, Korea University, Seoul 136-713 (Korea, Republic of); Kim, Kyoung-Kook [Department of Nano-Optical Engineering, Korea Polytechnic University, Gyeonggi 429-793 (Korea, Republic of); Seong, Tae-Yeon, E-mail: tyseong@korea.ac.kr [Department of Materials Science and Engineering, Korea University, Seoul 136-713 (Korea, Republic of)

2012-07-31

We investigate how TiO{sub 2} nanopatterns formed onto ZnO:Al (AZO) films affect the performance of hydrogenated amorphous silicon (a-Si:H) solar cells. Scanning electron microscopy results show that the dome-shaped TiO{sub 2} nanopatterns (300 nm in diameter) having a period of 500 nm are formed onto AZO films and vary from 60 to 180 nm in height. Haze factor increases with an increase in the height of the nanopatterns in the wavelength region below 530 nm. Short circuit current density also increases with an increase in the height of the nanopatterns. As the nanopatterns increases in height, the fill factor of the cells slightly increases, reaches maximum (0.64) at 100 nm, and then decreases. Measurements show that a-Si:H solar cells fabricated with 100 nm-high TiO{sub 2} nanopatterns exhibit the highest conversion efficiency (6.34%) among the solar cells with the nanopatterns and flat AZO sample. - Highlights: Black-Right-Pointing-Pointer We investigated the height effect of TiO{sub 2} nanopatterns on the a-Si:H solar cells. Black-Right-Pointing-Pointer Light scattering and anti-reflection were introduced by TiO{sub 2} nanopatterns. Black-Right-Pointing-Pointer a-Si:H Solar cells with the 100 nm-high TiO{sub 2} nanopatterns showed highest efficiency.

Comprehensive Study of SF_6/O_2 Plasma Etching for Mc-Silicon Solar Cells

International Nuclear Information System (INIS)

Li Tao; Zhou Chun-Lan; Wang Wen-Jing

2016-01-01

The mask-free SF_6/O_2 plasma etching technique is used to produce surface texturization of mc-silicon solar cells for efficient light trapping in this work. The SEM images and mc-silicon etching rate show the influence of plasma power, SF_6/O_2 flow ratios and etching time on textured surface. With the acidic-texturing samples as a reference, the reflection and IQE spectra are obtained under different experimental conditions. The IQE spectrum measurement shows an evident increase in the visible and infrared responses. By using the optimized plasma power, SF_6/O_2 flow ratios and etching time, the optimal efficiency of 15.7% on 50 × 50 mm"2 reactive ion etching textured mc-silicon silicon solar cells is achieved, mostly due to the improvement in the short-circuit current density. The corresponding open-circuit voltage, short-circuit current density and fill factor are 611 mV, 33.6 mA/cm"2, 76.5%, respectively. It is believed that such a low-cost and high-performance texturization process is promising for large-scale industrial silicon solar cell manufacturing. (paper)

Nanostructured Organic Solar Cells

DEFF Research Database (Denmark)

Radziwon, Michal Jędrzej; Rubahn, Horst-Günter; Madsen, Morten

Recent forecasts for alternative energy generation predict emerging importance of supporting state of art photovoltaic solar cells with their organic equivalents. Despite their significantly lower efficiency, number of application niches are suitable for organic solar cells. This work reveals...... the principles of bulk heterojunction organic solar cells fabrication as well as summarises major differences in physics of their operation....

Black Silicon Solar Cells with Black Ribbons

DEFF Research Database (Denmark)

Davidsen, Rasmus Schmidt; Tang, Peter Torben; Mizushima, Io

2016-01-01

We present the combination of mask-less reactive ion etch (RIE) texturing and blackened interconnecting ribbons as a method for obtaining all-black solar panels, while using conventional, front-contacted solar cells. Black silicon made by mask-less reactive ion etching has total, average...... in the range 15.7-16.3%. The KOH-textured reference cell had an efficiency of 17.9%. The combination of black Si and black interconnecting ribbons may result in aesthetic, all-black panels based on conventional, front-contacted silicon solar cells....... reflectance below 0.5% across a 156x156 mm2 silicon (Si) wafer. Black interconnecting ribbons were realized by oxidizing copper resulting in reflectance below 3% in the visible wavelength range. Screen-printed Si solar cells were realized on 156x156 mm2 black Si substrates with resulting efficiencies...

Doctor Blade-Coated Polymer Solar Cells

KAUST Repository

Cho, Nam Chul

2016-10-25

In this work, we report polymer solar cells based on blade-coated P3HT:PC71BM and PBDTTT-EFT:PC71BM bulk heterojunction photoactive layers. Enhanced power conversion efficiency of 2.75 (conventional structure) and 3.03% (inverted structure) with improved reproducibility was obtained from blade-coated P3HT:PC71BM solar cells, compared to spin-coated ones. Furthermore, by demonstrating 3.10% efficiency flexible solar cells using blade-coated PBDTTT-EFT:PC71BM films on the plastic substrates, we suggest the potential applicability of blade coating technique to the high throughput roll-to-roll fabrication systems.

Radiation hard solar cell and array

International Nuclear Information System (INIS)

Russell, R.L.

1975-01-01

A power generating solar cell for a spacecraft solar array is hardened against transient response to nuclear radiation while permitting normal operation of the cell in a solar radiation environment by shunting the cell with a second solar cell whose contacts are reversed relative to the power cell to form a cell module, exposing the power cell only to the solar radiation in a solar radiation environment to produce an electrical output at the module terminals, and exposing both cells to the nuclear radiation in a nuclear radiation environment so that the radiation induced currents generated by the cells suppress one another

Flexible Solar Cells

NARCIS (Netherlands)

Galagan, Y.

2018-01-01

This chapter discusses roll-to-roll (R2R) manufacturing of organic and perovskite solar cells (PSCs), as these emerging photovoltaic (PV) technologies can be fabricated using well-known R2R printing and coating processes that are widely used in the industry. The manufacturing of PV devices starts

Solar cell radiation handbook

Science.gov (United States)

Tada, H. Y.; Carter, J. R., Jr.; Anspaugh, B. E.; Downing, R. G.

1982-01-01

The handbook to predict the degradation of solar cell electrical performance in any given space radiation environment is presented. Solar cell theory, cell manufacturing and how they are modeled mathematically are described. The interaction of energetic charged particles radiation with solar cells is discussed and the concept of 1 MeV equivalent electron fluence is introduced. The space radiation environment is described and methods of calculating equivalent fluences for the space environment are developed. A computer program was written to perform the equivalent fluence calculations and a FORTRAN listing of the program is included. Data detailing the degradation of solar cell electrical parameters as a function of 1 MeV electron fluence are presented.

Yttrium-substituted nanocrystalline TiO 2 photoanodes for perovskite based heterojunction solar cells

KAUST Repository

Qin, Peng; Domanski, Anna L.; Chandiran, Aravind Kumar; Berger, Rü diger; Butt, Hans-Jü rgen; Dar, M. Ibrahim; Moehl, Thomas; Tetreault, Nicolas; Gao, Peng; Ahmad, Shahzada; Nazeeruddin, Mohammad K.; Grä tzel, Michael

2014-01-01

We report the use of Y3+-substituted TiO2 (0.5%Y-TiO2) in solid-state mesoscopic solar cells, consisting of CH3NH3PbI3 as the light harvester and spiro-OMeTAD as the hole transport material. A power conversion efficiency of 11.2% under simulated AM 1.5 full sun illumination was measured. A 15% improvement in the short-circuit current density was obtained compared with pure TiO2, due to the effect of Y3+ on the dimensions of perovskite nanoparticles formed on the semiconductor surface, showing that the surface modification of the semiconductor is an effective way to improve the light harvesters' morphology and electron transfer properties in the solid-state mesoscopic solar cells. © 2013 The Royal Society of Chemistry.

Yttrium-substituted nanocrystalline TiO 2 photoanodes for perovskite based heterojunction solar cells

KAUST Repository

Qin, Peng

2014-01-01

We report the use of Y3+-substituted TiO2 (0.5%Y-TiO2) in solid-state mesoscopic solar cells, consisting of CH3NH3PbI3 as the light harvester and spiro-OMeTAD as the hole transport material. A power conversion efficiency of 11.2% under simulated AM 1.5 full sun illumination was measured. A 15% improvement in the short-circuit current density was obtained compared with pure TiO2, due to the effect of Y3+ on the dimensions of perovskite nanoparticles formed on the semiconductor surface, showing that the surface modification of the semiconductor is an effective way to improve the light harvesters\\' morphology and electron transfer properties in the solid-state mesoscopic solar cells. © 2013 The Royal Society of Chemistry.

Synthesis of Bi_2S_3 quantum dots for sensitized solar cells by reverse SILAR

International Nuclear Information System (INIS)

Singh, Navjot; Sharma, J.; Tripathi, S. K.

2016-01-01

Quantum Dot Sensitized Solar cells (QDSSC) have great potential to replace silicon-based solar cells. Quantum dots of various materials and sizes could be used to convert most of the visible light into the electrical current. This paper put emphasis on the synthesis of Bismuth Sulphide quantum dots and selectivity of the anionic precursor by Successive Ionic Layer Adsorption Reaction (SILAR). Bismuth Sulfide (Bi_2S_3) (group V – Vi semiconductor) is strong contestant for cadmium free solar cells due to its optimum band gap for light harvesting. Optical, structural and electrical measurements are reported and discussed. Problem regarding the choice of precursor for anion extraction is discussed. Band gap of the synthesized quantum dots is 1.2 eV which does not match with the required energy band gap of bismuth sulfide that is 1.7 eV.

Synthesis of Bi2S3 quantum dots for sensitized solar cells by reverse SILAR

Science.gov (United States)

Singh, Navjot; Sharma, J.; Tripathi, S. K.

2016-05-01

Quantum Dot Sensitized Solar cells (QDSSC) have great potential to replace silicon-based solar cells. Quantum dots of various materials and sizes could be used to convert most of the visible light into the electrical current. This paper put emphasis on the synthesis of Bismuth Sulphide quantum dots and selectivity of the anionic precursor by Successive Ionic Layer Adsorption Reaction (SILAR). Bismuth Sulfide (Bi2S3) (group V - Vi semiconductor) is strong contestant for cadmium free solar cells due to its optimum band gap for light harvesting. Optical, structural and electrical measurements are reported and discussed. Problem regarding the choice of precursor for anion extraction is discussed. Band gap of the synthesized quantum dots is 1.2 eV which does not match with the required energy band gap of bismuth sulfide that is 1.7eV.

Zr-doped TiO2 as a thermostabilizer in plasmon-enhanced dye-sensitized solar cells

Science.gov (United States)

Pasche, Anastasia; Grohe, Bernd; Mittler, Silvia; Charpentier, Paul A.

2017-07-01

Harvesting solar energy is a promising solution toward meeting the world's ever-growing energy demand. Dye-sensitized solar cells (DSSCs) are hybrid organic-inorganic solar cells with tremendous potential for commercial application, but they are plagued by inefficiency due to their poor sunlight absorption. Plasmonic silver nanoparticles (AgNPs) have been shown to enhance the absorptive properties of DSSCs, but their plasmonic resonance can cause thermal damage resulting in cell deterioration. Hence, the influence of Zr-doped TiO2 on the efficiency of plasmon-enhanced DSSCs was studied, showing that 5 mol.% Zr-doping of the photoactive TiO2 material can improve the photovoltaic performance of DSSCs by 44%. By examining three different DSSC designs, it became clear that the efficiency enhancing effect of Zr strongly depends on the proximity of the Zr-doped material to the plasmonic AgNPs.

Ion beam analysis of Cu(In,Ga)Se{sub 2} thin film solar cells

Energy Technology Data Exchange (ETDEWEB)

Karydas, A.G. [International Atomic Energy Agency (IAEA), IAEA Laboratories, Nuclear Science and Instrumentation Laboratory, A-2444 Seibersdorf (Austria); Institute of Nuclear and Particle Physics, NCSR “Demokritos”, 153 10 Aghia Paraskevi, Athens Greece (Greece); Streeck, C. [Physikalisch-Technische Bundesanstalt (PTB), Abbestr. 2-12, 10587 Berlin (Germany); Radovic, I. Bogdanovic [Ruđer Bošković Institute (RBI), Zagreb (Croatia); Kaufmann, C.; Rissom, T. [Helmholtz-Zentrum Berlin für Materialien und Energie GmbH (HZB), Hahn-Meitner-Platz 1, 14109 Berlin (Germany); Beckhoff, B. [Physikalisch-Technische Bundesanstalt (PTB), Abbestr. 2-12, 10587 Berlin (Germany); Jaksic, M. [Ruđer Bošković Institute (RBI), Zagreb (Croatia); Barradas, N.P. [Centro de Ciências e Tecnologias Nucleares, Instituto Superior Técnico, Universidade de Lisboa, E. N. 10, Apartado 21, 2686-953 Sacavém (Portugal)

2015-11-30

Graphical abstract: - Highlights: • Elemental depth profiles for various CIGS thin films were quantitatively determined. • Pure absorbers, complete cell and bilayer solar cells were prepared and analyzed. • Synergistic PIXE and RBS analysis of thin solar cells using alpha beam particles. • High energy alpha beam resolved completely the Indium depth profile. • Synchrotron based Reference Free GIXRF quantitative analysis validated IBA results. - Abstract: The present work investigates the potential of ion beam analysis (IBA) techniques such as the Rutherford backscattering spectrometry (RBS) and particle induced X-ray emission (PIXE) using helium ions to provide quantitative in-depth elemental analysis of various types of Cu(In,Ga)Se{sub 2} thin films. These films with a thickness of about 2 μm are used as absorber layers in photovoltaic devices with continuously increasing the performance of this technology. The preparation process generally aims to obtain an in-depth gradient of In and Ga concentrations that optimizes the optoelectronic and electrical properties of the solar cell. The measurements were performed at directly accessible single or double layered CIGS absorbers and at buried absorbers in completed thin film solar cells. The IBA data were analyzed simultaneously in order to derive best fitted profiles that match all experimental RBS and PIXE spectra. For some samples elemental profiles deduced form synchrotron based, reference free grazing incidence X-ray fluorescence analysis were compared with the IBA results and an overall good agreement was observed within quoted uncertainties.

SnS nanoparticles to boost CuInS2 solar cells

NARCIS (Netherlands)

Prastani, C.

2015-01-01

To make photovoltaics a competitive energy source it is essential to increase its energy conversion efficiency. Quantum dots can play an important role to overcome the Shockley-Queisser efficiency limit. Theoretically, a quantum dot based Intermediate Band solar cell can reach an efficiency of 63.2%

Interface Engineering of Organic Schottky Barrier Solar Cells and Its Application in Enhancing Performances of Planar Heterojunction Solar Cells

OpenAIRE

Fangming Jin; Zisheng Su; Bei Chu; Pengfei Cheng; Junbo Wang; Haifeng Zhao; Yuan Gao; Xingwu Yan; Wenlian Li

2016-01-01

In this work, we describe the performance of organic Schottky barrier solar cells with the structure of ITO/molybdenum oxide (MoOx)/boron subphthalocyanine chloride (SubPc)/bathophenanthroline (BPhen)/Al. The SubPc-based Schottky barrier solar cells exhibited a short-circuit current density (Jsc) of 2.59?mA/cm2, an open-circuit voltage (Voc) of 1.06?V, and a power conversion efficiency (PCE) of 0.82% under simulated AM1.5?G solar illumination at 100?mW/cm2. Device performance was substantiall...

Influence of different TiO{sub 2} blocking films on the photovoltaic performance of perovskite solar cells

Energy Technology Data Exchange (ETDEWEB)

Zhang, Chenxi; Luo, Yudan; Chen, Xiaohong, E-mail: xhchen@phy.ecnu.edu.cn; Ou-Yang, Wei; Chen, Yiwei; Sun, Zhuo; Huang, Sumei, E-mail: smhuang@phy.ecnu.edu.cn

2016-12-01

Highlights: • TiO{sub 2} blocking layer (BL) was synthesized using various methods. • Effect of BL characteristics on performance of perovskite solar cell was studied. • Charge transfer kinetics of perovskite solar cells with different BLs was explored. • We demonstrated efficient solar cells employing chemical bath deposition based BLs. - Abstract: Organolead trihalide perovskite materials have been successfully used as light absorbers in efficient photovoltaic (PV) cells. Cell structures based on mesoscopic metal oxides and planar heterojunctions have already demonstrated very impressive and brisk advances, holding great potential to grow into a mature PV technology. High power conversion efficiency (PCE) values have been obtained from the mesoscopic configuration in which a few hundred nano-meter thick mesoporous scaffold (e.g. TiO{sub 2} or Al{sub 2}O{sub 3}) infiltrated by perovskite absorber was sandwiched between the electron and hole transport layers. A uniform and compact hole-blocking layer is necessary for high efficient perovskite-based thin film solar cells. In this study, we investigated the characteristics of TiO{sub 2} compact layer using various methods and its effects on the PV performance of perovskite solar cells. TiO{sub 2} compact layer was prepared by a sol-gel method based on titanium isopropoxide and HCl, spin-coating of titanium diisopropoxide bis (acetylacetonate), screen-printing of Dyesol’s bocking layer titania paste, and a chemical bath deposition (CBD) technique via hydrolysis of TiCl{sub 4}, respectively. The morphological and micro-structural properties of the formed compact TiO{sub 2} layers were characterized by scanning electronic microscopy and X-ray diffraction. The analyses of devices performance characteristics showed that surface morphologies of TiO{sub 2} compact films played a critical role in affecting the efficiencies. The nanocrystalline TiO{sub 2} film deposited via the CBD route acts as the most efficient

Characterization and Performance Evaluation of Dye Sensitized Solar Cell Using Nanostructured TiO2 Electrode

Directory of Open Access Journals (Sweden)

Sule Erten-Ela

2014-01-01

Full Text Available Metal-free organic sensitizer consisting of donor, electron conducting, and anchoring anhydride groups was engineered at molecular level and synthesized. Dye sensitized solar cells based on conjugated naphthalene dye were fabricated using nanoporous electrode. Photoelectrodes with a 7 μm thick nanoporous layer and a 5 μm thick light-scattering layer were used to fabricate dye sensitized solar cells. DSSCs were fabricated in a FTO/nc-TiO2/organic dye/I-/I3-/Pt/FTO device geometry. Dye sensitized solar cell was characterized by current density-voltage (J-V measurement. All current-voltage (I-V measurements were done under 100 mW/cm2 light intensity and AM 1.5 conditions. The photovoltaic data revealed a short circuit photocurrent density of 1.86 mA/cm2, an open circuit voltage of 430 mV, and a fill factor of 0.63, corresponding to an overall conversion efficiency of 0.53%.

Dataset demonstrating the modeling of a high performance Cu(In,GaSe2 absorber based thin film photovoltaic cell

Directory of Open Access Journals (Sweden)

Md. Asaduzzaman

2017-04-01

Full Text Available The physical data of the semiconductor materials used in the design of a CIGS absorber based thin film photovoltaic cell have been presented in this data article. Besides, the values of the contact parameter and operating conditions of the cell have been reported. Furthermore, by conducting the simulation with data corresponding to the device structure: soda-lime glass (SLG substrate/Mo back-contact/CIGS absorber/CdS buffer/intrinsic ZnO/Al-doped ZnO window/Al-grid front-contact, the solar cell performance parameters such as open circuit voltage (Voc, short circuit current density Jsc, fill factor (FF, efficiency (η, and collection efficiency ηc have been analyzed.

8 COPPER (I) OXIDE (Cu2O) BASED SOLAR CELLS - A REVIEW

African Journals Online (AJOL)

DR. AMINU

(metal/semiconductor) barrier Cu2O solar cells, where different low work function metals ... The sun has a reasonable stable life time ... practical solution to the global energy problems; ... compounds balance their structures by the presence.

Local current-voltage behaviors of preferentially and randomly textured Cu(In,Ga)Se2 thin films investigated by conductive atomic force microscopy

International Nuclear Information System (INIS)

Shin, R.H.; Jo, W.; Kim, D.W.; Yun, Jae Ho; Ahn, S.

2011-01-01

Electrical transport properties on polycrystalline Cu(In,Ga)Se 2 (CIGS) (Ga/(In+Ga) ∼35%) thin films were examined by conductive atomic force microscopy. The CIGS thin films with a (112) preferential or random texture were deposited on Mo-coated glass substrates. Triangular pyramidal grain growths were observed in the CIGS thin films preferentially textured to the (112) planes. Current maps of the CIGS surface were acquired with a zero or non-zero external voltage bias. The contrast of the images on the grain boundaries and intragrains displayed the conduction path in the materials. Local current-voltage measurements were performed to evaluate the charge conduction properties of the CIGS thin films. (orig.)

Highly reflective rear surface passivation design for ultra-thin Cu(In,Ga)Se{sub 2} solar cells

Energy Technology Data Exchange (ETDEWEB)

Vermang, Bart, E-mail: Bart.Vermang@angstrom.uu.se [Ångström Solar Center, University of Uppsala, Uppsala 75121 (Sweden); ESAT-KU Leuven, University of Leuven, Leuven 3001 (Belgium); Wätjen, Jörn Timo; Fjällström, Viktor; Rostvall, Fredrik; Edoff, Marika [Ångström Solar Center, University of Uppsala, Uppsala 75121 (Sweden); Gunnarsson, Rickard; Pilch, Iris; Helmersson, Ulf [Plasma & Coatings Physics, University of Linköping, Linköping 58183 (Sweden); Kotipalli, Ratan; Henry, Frederic; Flandre, Denis [ICTEAM/IMNC, Université Catholique de Louvain, Louvain-la-Neuve 1348 (Belgium)

2015-05-01

Al{sub 2}O{sub 3} rear surface passivated ultra-thin Cu(In,Ga)Se{sub 2} (CIGS) solar cells with Mo nano-particles (NPs) as local rear contacts are developed to demonstrate their potential to improve optical confinement in ultra-thin CIGS solar cells. The CIGS absorber layer is 380 nm thick and the Mo NPs are deposited uniformly by an up-scalable technique and have typical diameters of 150 to 200 nm. The Al{sub 2}O{sub 3} layer passivates the CIGS rear surface between the Mo NPs, while the rear CIGS interface in contact with the Mo NP is passivated by [Ga]/([Ga] + [In]) (GGI) grading. It is shown that photon scattering due to the Mo NP contributes to an absolute increase in short circuit current density of 3.4 mA/cm{sup 2}; as compared to equivalent CIGS solar cells with a standard back contact. - Highlights: • Proof-of-principle ultra-thin CIGS solar cells have been fabricated. • The cells have Mo nano-particles (NPs) as local rear contacts. • An Al{sub 2}O{sub 3} film passivates the CIGS rear surface between these nano-particles. • [Ga]/([Ga] + [In]) grading is used to reduce Mo-NP/CIGS interface recombination.

How the relative permittivity of solar cell materials influences solar cell performance

DEFF Research Database (Denmark)

Crovetto, Andrea; Huss-Hansen, Mathias K.; Hansen, Ole

2017-01-01

of the materials permittivity on the physics and performance of the solar cell by means of numerical simulation supported by analytical relations. We demonstrate that, depending on the specific solar cell configuration and materials properties, there are scenarios where the relative permittivity has a major......The relative permittivity of the materials constituting heterojunction solar cells is usually not considered as a design parameter when searching for novel combinations of heterojunction materials. In this work, we investigate the validity of such an approach. Specifically, we show the effect...... the heterojunction partner has a high permittivity, solar cells are consistently more robust against several non-idealities that are especially likely to occur in early-stage development, when the device is not yet optimized....

Refractive index extraction and thickness optimization of Cu2ZnSnSe4 thin film solar cells

NARCIS (Netherlands)

ElAnzeery, H.; El Daif, O.; Buffière, M.; Oueslati, S.; Ben Messaoud, K.; Agten, D.; Brammertz, G.; Guindi, R.; Kniknie, B.; Meuris, M.; Poortmans, J.

2015-01-01

Cu2nSnSe4 (CZTSe) thin film solar cells are promising emergent photovoltaic technologies based on low-bandgap absorber layer with high absorption coefficient. To reduce optical losses in such devices and thus improve their efficiency, numerical simulations of CZTSe solar cells optical

The investigation of influence of accelerated electrons on SiO2 used in silicon solar cells

International Nuclear Information System (INIS)

Abdullaev, G.B.; Bakirov, M.Ya; Akhmedov, G.M.; Safarov, N.A.; Safarova, F.D.

1994-01-01

The process of radiation defects production in enlightened SiO 2 layers coated on silicon solar cells was studied. During irradiation the silicon solar cells with enlightened layers radiation defects are formed both in silicon and SiO 2 thus making worse photo energetic parameters of cells. For investigation of radiation effects formed under irradiation by electrons with 5 MeV energy and cobalt-60 gamma-rays photoluminescence, absorption spectra and electron spin resonance methods were used. It is supposed that main radiation defects in silicon dioxide are E'-centers and oxygen vacancies. (A.D. Avezov). 10 refs.; 2 figs

Transparent solar cell window module

Energy Technology Data Exchange (ETDEWEB)

Chau, Joseph Lik Hang; Chen, Ruei-Tang; Hwang, Gan-Lin; Tsai, Ping-Yuan [Nanopowder and Thin Film Technology Center, ITRI South, Industrial Technology Research Institute, Tainan County 709 (China); Lin, Chien-Chu [I-Lai Acrylic Corporation, Tainan City (China)

2010-03-15

A transparent solar cell window module based on the integration of traditional silicon solar cells and organic-inorganic nanocomposite material was designed and fabricated. The transparent solar cell window module was composed of a nanocomposite light-guide plate and traditional silicon solar cells. The preparation of the nanocomposite light-guide plate is easy without modification of the traditional casting process, the nanoparticles sol can be added directly to the polymethyl methacrylate (PMMA) monomer syrup during the process. The solar energy collected by this window can be used to power up small household electrical appliances. (author)

Thermal management approaches of Cu(In x ,Ga1-x )Se2 micro-solar cells

Science.gov (United States)

Sancho-Martínez, Diego; Schmid, Martina

2017-11-01

Concentrator photovoltaics (CPV) is a cost-effective method for generating electricity in regions that have a large fraction of direct solar radiation. With the help of lenses, sunlight is concentrated onto miniature, highly efficient multi-junction solar cells with a photovoltaic performance above 40%. To ensure illumination with direct radiation, CPV modules must be installed on trackers to follow the sun’s path. However, the costs of huge concentration optics and the photovoltaic technology used, narrow the market possibilities for CPV technology. Efforts to reduce these costs are being undertaken by the promotion of Cu(In x ,Ga1-x )Se2 solar cells to take over the high cost multi-junction solar cells and implementing more compact devices by minimization of solar cell area. Micrometer-sized absorbers have the potential of low cost, high efficiencies and good thermal dissipation under concentrated illumination. Heat dissipation at low (account: absorber area, substrate area and thickness, structure design, heat transfer mechanism, concentration factor and illumination profile. A close study on them will be carried out to determine the best structure to enhance and reach the highest possible thermal management pointing to an efficiency improvement.

Natural Dye-Sensitized Solar Cell Based on Nanocrystalline TiO2

International Nuclear Information System (INIS)

Jasim, K.E.

2012-01-01

During the last quarter of the twentieth century there have been intensive research activities looking for green sources of energy. The main aim of the green generators or converters of energy is to replace the conventional (fossil) energy sources, hence reducing further accumulation of the green house gasses GHGs. Conventional silicon and III-V semiconductor solar cell based on crystalline bulk, quantum well and quantum dots structure or amorphous and thin film structures provided a feasible solution. However, natural dye sensitized solar cells NDSSC are a promising class of photovoltaic cells with the capability of generating green energy at low production cost since no vacuum systems or expensive equipment are required in their fabrication. Also, natural dyes are abundant, easily extracted and safe materials. In NDSSC, once dye molecules exposed to light they become oxidized and transfer electrons to a nano structured layer of wide bandgap semiconductors such as TiO 2 . The generated electrons are drawn outside the cell through ohmic contact to a load. In this paper we review the structure and operation principles of the dye sensitized solar cell DSSC. We discuss preparation procedures, optical and electrical characterization of the NDSSC using local dyes extracted from Henna (Lawsonia inermis L.), pomegranate, cherries and Bahraini raspberries (Rubus spp.). These natural organic dyes are potential candidates to replace some of the man-made dyes used as sensitizer in many commercialized photoelectrochemical cells. Factors limiting the operation of the DSSC are discussed. NDSSCs are expected to be a favored choice in the building-integrated photovoltaic (BIPV) due to their robustness, therefore, requiring no special shielding from natural events such as tree strikes or hails. (author)

InGaP solar cell on Ge-on-Si virtual substrate for novel solar power conversion

Science.gov (United States)

Kim, T. W.; Albert, B. R.; Kimerling, L. C.; Michel, J.

2018-02-01

InGaP single-junction solar cells are grown on lattice-matched Ge-on-Si virtual substrates using metal-organic chemical vapor deposition. Optoelectronic simulation results indicate that the optimal collection length for InGaP single-junction solar cells with a carrier lifetime range of 2-5 ns is wider than approximately 1 μm. Electron beam-induced current measurements reveal that the threading dislocation density (TDD) of InGaP solar cells fabricated on Ge and Ge-on-Si substrates is in the range of 104-3 × 107 cm-2. We demonstrate that the open circuit voltage (Voc) of InGaP solar cells is not significantly influenced by TDDs less than 2 × 106 cm-2. Fabricated InGaP solar cells grown on a Ge-on-Si virtual substrate and a Ge substrate exhibit Voc in the range of 0.96 to 1.43 V under an equivalent illumination in the range of ˜0.5 Sun. The estimated efficiency of the InGaP solar cell fabricated on the Ge-on-Si virtual substrate (Ge substrate) at room temperature for the limited incident spectrum spanning the photon energy range of 1.9-2.4 eV varies from 16.6% to 34.3%.

Solar cells for space applications (part 2)

International Nuclear Information System (INIS)

Gomez, T.J.

1992-01-01

This lecture focusses on qualification and verification tests and procedures on solar cells designed for space applications. The series of tests should produce orbital performance under determined illumination, temperature and irradiance. Tests are divided in outdoor and laboratory experiments. Environmental tests include durability, qualification (mechanical and electrical), I-V curves, Spectral response

Microstructured extremely thin absorber solar cells

DEFF Research Database (Denmark)

Biancardo, Matteo; Krebs, Frederik C

2007-01-01

In this paper we present the realization of extremely thin absorber (ETA) solar cells employing conductive glass substrates functionalized with TiO2 microstructures produced by embossing. Nanocrystalline or compact TiO2 films on Indium doped tin oxide (ITO) glass substrates were embossed by press......In this paper we present the realization of extremely thin absorber (ETA) solar cells employing conductive glass substrates functionalized with TiO2 microstructures produced by embossing. Nanocrystalline or compact TiO2 films on Indium doped tin oxide (ITO) glass substrates were embossed...

Radiation resistant low bandgap InGaAsP solar cell for multi-junction solar cells

International Nuclear Information System (INIS)

Khan, Aurangzeb; Yamaguchi, Masafumi; Dharmaras, Nathaji; Yamada, Takashi; Tanabe, Tatsuya; Takagishi, Shigenori; Itoh, Hisayoshi; Ohshima, Takeshi

2001-01-01

We have explored the superior radiation tolerance of metal organic chemical vapor deposition (MOCVD) grown, low bandgap, (0.95eV) InGaAsP solar cells as compared to GaAs-on-Ge cells, after 1 MeV electron irradiation. The minority carrier injection due to forward bias and light illumination under low concentration ratio, can lead to enhanced recovery of radiation damage in InGaAsP n + -p junction solar cells. An injection anneal activation energy (0.58eV) of the defects involved in damage/recovery of the InGaAsP solar cells has been estimated from the resultant recovery of the solar cell properties following minority carrier injection. The results suggest that low bandgap radiation resistant InGaAsP (0.95eV) lattice matched to InP substrates provide an alternative to use as bottom cells in multi-junction solar cells instead of less radiation ressitant conventional GaAs based solar cells for space applications. (author)

TiO2 nanotube-based dye solar cell research in South Africa

CSIR Research Space (South Africa)

Cummings, F

2009-10-01

Full Text Available Vertically orientated titanium dioxide (TiO2) nanotubes hold great potential for application in dye-sensitized solar cells (DSCs) as they provide an unscathed, one-dimensional transport route for photo-generated charge carriers, thereby increasing...

Inkjet?Printed Cu2ZnSn(S, Se)4 Solar Cells

OpenAIRE

Lin, Xianzhong; Kavalakkatt, Jaison; Lux?Steiner, Martha Ch.; Ennaoui, Ahmed

2015-01-01

Cu2ZnSn(S, Se)4?based solar cells with total area (0.5 cm2) power conversion efficiency of 6.4% are demonstrated from thin film absorbers processed by inkjet printing technology of Cu?Zn?Sn?S precursor ink followed by selenization. The device performance is limited by the low fill factor, which is due to the high series resistance.

Inkjet-Printed Cu2ZnSn(S, Se)4 Solar Cells.

Science.gov (United States)

Lin, Xianzhong; Kavalakkatt, Jaison; Lux-Steiner, Martha Ch; Ennaoui, Ahmed

2015-06-01

Cu 2 ZnSn(S, Se) 4 -based solar cells with total area (0.5 cm 2 ) power conversion efficiency of 6.4% are demonstrated from thin film absorbers processed by inkjet printing technology of Cu-Zn-Sn-S precursor ink followed by selenization. The device performance is limited by the low fill factor, which is due to the high series resistance.

Complementary Characterization of Cu(In,Ga)Se₂ Thin-Film Photovoltaic Cells Using Secondary Ion Mass Spectrometry, Auger Electron Spectroscopy, and Atom Probe Tomography.

Science.gov (United States)

Jang, Yun Jung; Lee, Jihye; Jeong, Jeung-Hyun; Lee, Kang-Bong; Kim, Donghwan; Lee, Yeonhee

2018-05-01

To enhance the conversion performance of solar cells, a quantitative and depth-resolved elemental analysis of photovoltaic thin films is required. In this study, we determined the average concentration of the major elements (Cu, In, Ga, and Se) in fabricated Cu(In,Ga)Se2 (CIGS) thin films, using inductively coupled plasma atomic emission spectroscopy, X-ray fluorescence, and wavelengthdispersive electron probe microanalysis. Depth profiling results for CIGS thin films with different cell efficiencies were obtained using secondary ion mass spectrometry and Auger electron spectroscopy to compare the atomic concentrations. Atom probe tomography, a characterization technique with sub-nanometer resolution, was used to obtain three-dimensional elemental mapping and the compositional distribution at the grain boundaries (GBs). GBs are identified by Na increment accompanied by Cu depletion and In enrichment. Segregation of Na atoms along the GB had a beneficial effect on cell performance. Comparative analyses of different CIGS absorber layers using various analytical techniques provide us with understanding of the compositional distributions and structures of high efficiency CIGS thin films in solar cells.

World's Most Efficient Solar Cell

Science.gov (United States)

World's Most Efficient Solar Cell National Renewable Energy Laboratory, Spectrolab Set Record For , 1999 - A solar cell that can convert sunlight to electricity at a record-setting 32 percent efficiency on Earth. Spectrolab of Sylmar, Calif., "grew" the record-setting solar cell. After

Pairing of near-ultraviolet solar cells with electrochromic windows for smart management of the solar spectrum

Science.gov (United States)

Davy, Nicholas C.; Sezen-Edmonds, Melda; Gao, Jia; Lin, Xin; Liu, Amy; Yao, Nan; Kahn, Antoine; Loo, Yueh-Lin

2017-08-01

Current smart window technologies offer dynamic control of the optical transmission of the visible and near-infrared portions of the solar spectrum to reduce lighting, heating and cooling needs in buildings and to improve occupant comfort. Solar cells harvesting near-ultraviolet photons could satisfy the unmet need of powering such smart windows over the same spatial footprint without competing for visible or infrared photons, and without the same aesthetic and design constraints. Here, we report organic single-junction solar cells that selectively harvest near-ultraviolet photons, produce open-circuit voltages eclipsing 1.6 V and exhibit scalability in power generation, with active layers (10 cm2) substantially larger than those typical of demonstration organic solar cells (0.04-0.2 cm2). Integration of these solar cells with a low-cost, polymer-based electrochromic window enables intelligent management of the solar spectrum, with near-ultraviolet photons powering the regulation of visible and near-infrared photons for natural lighting and heating purposes.

Integration of Solar Cells on Top of CMOS Chips Part I: a-Si Solar Cells

NARCIS (Netherlands)

Lu, J.; Kovalgin, Alexeij Y.; van der Werf, Karine H.M.; Schropp, Ruud E.I.; Schmitz, Jurriaan

2011-01-01

We present the monolithic integration of deepsubmicrometer complementary metal–oxide–semiconductor (CMOS) microchips with a-Si:H solar cells. Solar cells are manufactured directly on the CMOS chips. The microchips maintain comparable electronic performance, and the solar cells show efficiency values

Solar cell concentrating system

International Nuclear Information System (INIS)

Garg, H.P.; Sharma, V.K.; Agarwal, R.K.

1986-11-01

This study reviews fabrication techniques and testing facilities for different solar cells under concentration which have been developed and tested. It is also aimed to examine solar energy concentrators which are prospective candidates for photovoltaic concentrator systems. This may provide an impetus to the scientists working in the area of solar cell technology

PSA Solar furnace: A facility for testing PV cells under concentrated solar radiation

Energy Technology Data Exchange (ETDEWEB)

Fernandez-Reche, J.; Canadas, I.; Sanchez, M.; Ballestrin, J.; Yebra, L.; Monterreal, R.; Rodriguez, J.; Garcia, G. [Concentration Solar Technologies, Plataforma Solar de Almeria-CIEMAT P.O. Box 22, Tabernas, E-04200 (Almeria) (Spain); Alonso, M.; Chenlo, F. [Photovoltaic Components and Systems, Renewable Energies Department-CIEMAT Avda. Complutense, 22, Madrid, E-28040 (Spain)

2006-09-22

The Plataforma Solar de Almeria (PSA), the largest centre for research, development and testing of concentration solar thermal technologies in Europe, has started to apply its knowledge, facilities and resources to development of the Concentration PV technology in an EU-funded project HiConPV. A facility for testing PV cells under solar radiation concentrated up to 2000x has recently been completed. The advantages of this facility are that, since it is illuminated by solar radiation, it is possible to obtain the appropriate cell spectral response directly, and the flash tests can be combined with prolonged PV-cell irradiation on large surfaces (up to 150cm{sup 2}), so the thermal response of the PV cell can be evaluated simultaneously. (author)

Planar-Structure Perovskite Solar Cells with Efficiency beyond 21.

Science.gov (United States)

Jiang, Qi; Chu, Zema; Wang, Pengyang; Yang, Xiaolei; Liu, Heng; Wang, Ye; Yin, Zhigang; Wu, Jinliang; Zhang, Xingwang; You, Jingbi

2017-12-01

Low temperature solution processed planar-structure perovskite solar cells gain great attention recently, while their power conversions are still lower than that of high temperature mesoporous counterpart. Previous reports are mainly focused on perovskite morphology control and interface engineering to improve performance. Here, this study systematically investigates the effect of precise stoichiometry, especially the PbI 2 contents on device performance including efficiency, hysteresis and stability. This study finds that a moderate residual of PbI 2 can deliver stable and high efficiency of solar cells without hysteresis, while too much residual PbI 2 will lead to serious hysteresis and poor transit stability. Solar cells with the efficiencies of 21.6% in small size (0.0737 cm 2 ) and 20.1% in large size (1 cm 2 ) with moderate residual PbI 2 in perovskite layer are obtained. The certificated efficiency for small size shows the efficiency of 20.9%, which is the highest efficiency ever recorded in planar-structure perovskite solar cells, showing the planar-structure perovskite solar cells are very promising. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

High-power, ultralow-mass solar arrays: FY-77 solar arrays technology readiness assessment report, volume 2

Science.gov (United States)

Costogue, E. N.; Young, L. E.; Brandhorst, H. W., Jr.

1978-01-01

Development efforts are reported in detail for: (1) a lightweight solar array system for solar electric propulsion; (2) a high efficiency thin silicon solar cell; (3) conceptual design of 200 W/kg solar arrays; (4) fluorocarbon encapsulation for silicon solar cell array; and (5) technology assessment of concentrator solar arrays.

Industrial Silicon Wafer Solar Cells

Directory of Open Access Journals (Sweden)

Dirk-Holger Neuhaus

2007-01-01

Full Text Available In 2006, around 86% of all wafer-based silicon solar cells were produced using screen printing to form the silver front and aluminium rear contacts and chemical vapour deposition to grow silicon nitride as the antireflection coating onto the front surface. This paper reviews this dominant solar cell technology looking into state-of-the-art equipment and corresponding processes for each process step. The main efficiency losses of this type of solar cell are analyzed to demonstrate the future efficiency potential of this technology. In research and development, more various advanced solar cell concepts have demonstrated higher efficiencies. The question which arises is “why are new solar cell concepts not transferred into industrial production more frequently?”. We look into the requirements a new solar cell technology has to fulfill to have an advantage over the current approach. Finally, we give an overview of high-efficiency concepts which have already been transferred into industrial production.

Simple Photovoltaic Cells for Exploring Solar Energy Concepts

Science.gov (United States)

Appleyard, S. J.

2006-01-01

Low-efficiency solar cells for educational purposes can be simply made in school or home environments using wet-chemistry techniques and readily available chemicals of generally low toxicity. Instructions are given for making solar cells based on the heterojunctions Cu/Cu[subscript 2]O, Cu[subscript 2]O/ZnO and Cu[subscript 2]S/ZnO, together with…

Solar Cells from Earth-Abundant Semiconductors with Plasmon-Enhanced Light Absorption

Energy Technology Data Exchange (ETDEWEB)

Atwater, Harry

2012-04-30

Progress is reported in these areas: Plasmonic Light Trapping in Thin Film a-Si Solar Cells; Plasmonic Light Trapping in Thin InGaN Quantum Well Solar Cells; and Earth Abundant Cu{sub 2}O and Zn{sub 3}P{sub 2} Solar Cells.

High-efficiency perovskite solar cells based on anatase TiO{sub 2} nanotube arrays

Energy Technology Data Exchange (ETDEWEB)

Huang, Yan, E-mail: huangyan@ecust.edu.cn [School of Chemistry and Molecular Engineering, East China University of Science & Technology, Shanghai 200237 (China); Department of Chemical and Petroleum Engineering, University of Pittsburgh, Pittsburgh, PA 15261 (United States); Wu, Jiamin; Gao, Di [Department of Chemical and Petroleum Engineering, University of Pittsburgh, Pittsburgh, PA 15261 (United States)

2016-01-01

Perovskite solar cells (PSCs) based on one-dimensional anatase TiO{sub 2} nanotube arrays were prepared by using a two-step deposition method to fill the arrays of TiO{sub 2} nanotubes in different lengths with perovskite. The photovoltaic performance of PSCs was found to be significantly dependent on the length of the TiO{sub 2} nanotubes, and the power conversion efficiency decreased as the length of the TiO{sub 2} nanotubes increased from ~ 0.40 μm to ~ 0.65 and then to ~ 0.93 μm. The PSC fabricated with ~ 0.40 μm-long anatase TiO{sub 2} nanotube arrays yielded a power conversion efficiency of 11.3% and a fill factor of 0.68 under illumination of 100 mW/cm{sup 2} AM 1.5G simulated sunlight, which is significantly higher than previously reported solar cells based on 1-D TiO{sub 2} nanostructures. Incident photon-to-current efficiency and electrochemical impedance spectroscopy measurements indicated that longer TiO{sub 2} nanotubes led to higher recombination losses of charge carriers, possibly due to poor filling of the nanotube arrays with perovskite. - Highlights: • 1D anatase TiO{sub 2} nanotubes were used to fabricate perovskite solar cells. • The best efficiency of 11.3% was achieved with ~ 0.40 μm-long TiO{sub 2} nanotubes. • The efficiency of the devices decreased with increasing TiO{sub 2} nanotube lengths.

Degradation of CIGS solar cells

NARCIS (Netherlands)

Theelen, M.J.

2015-01-01

Thin film CIGS solar cells and individual layers within these solar cells have been tested in order to assess their long term stability. Alongside with the execution of standard tests, in which elevated temperatures and humidity levels are used, the solar cells have also been exposed to a

The performance of silicon solar cells operated in liquids

International Nuclear Information System (INIS)

Wang Yiping; Fang Zhenlei; Zhu Li; Huang Qunwu; Zhang Yan; Zhang Zhiying

2009-01-01

Better performance can be achieved when the bare silicon solar cells are immersed into liquids for the enhanced heat removing. In this study, the performance of solar cells immersed in liquids was examined under simulated sunlight. To distinguish the effects of the liquid optic and electric properties on the solar cells, a comparison between immersion of the solar module and the bare solar cells was carried out. It was found that the optic properties of the liquids can cause minor efficiency changes on the solar cells, while the electric properties of the liquids, the molecular polarizable and ions, are responsible for the most of the changes. The bare solar cells immersed in the non-polar silicon oil have the best performance. The accelerated life tests were carried out at 150 deg. C high temperature and under 200 W/m 2 ultraviolet light irradiation, respectively. It was found that the silicon oil has good stability. This study can give support on the cooling of the concentrated photovoltaic systems by immersing the solar cells in the liquids directly

Effect of electrodeposition potential on composition and morphology ...

Indian Academy of Sciences (India)

The underpotential deposition mechanism of Cu–Se and In–Se phases was observed in ... Thin films; cyclic voltammetry; CuInGaSe (CIGS); solar cell; electrodeposition. 1. ... trode was a Pt spiral wire and the working electrode was. 735 ...

Solar cell with back side contacts

Science.gov (United States)

Nielson, Gregory N; Okandan, Murat; Cruz-Campa, Jose Luis; Resnick, Paul J; Wanlass, Mark Woodbury; Clews, Peggy J

2013-12-24

A III-V solar cell is described herein that includes all back side contacts. Additionally, the positive and negative electrical contacts contact compoud semiconductor layers of the solar cell other than the absorbing layer of the solar cell. That is, the positive and negative electrical contacts contact passivating layers of the solar cell.

Three-Terminal Amorphous Silicon Solar Cells

Directory of Open Access Journals (Sweden)

Cheng-Hung Tai

2011-01-01

Full Text Available Many defects exist within amorphous silicon since it is not crystalline. This provides recombination centers, thus reducing the efficiency of a typical a-Si solar cell. A new structure is presented in this paper: a three-terminal a-Si solar cell. The new back-to-back p-i-n/n-i-p structure increased the average electric field in a solar cell. A typical a-Si p-i-n solar cell was also simulated for comparison using the same thickness and material parameters. The 0.28 μm-thick three-terminal a-Si solar cell achieved an efficiency of 11.4%, while the efficiency of a typical a-Si p-i-n solar cell was 9.0%. Furthermore, an efficiency of 11.7% was achieved by thickness optimization of the three-terminal solar cell.

Recyclable organic solar cells on cellulose nanocrystal substrates.

Science.gov (United States)

Zhou, Yinhua; Fuentes-Hernandez, Canek; Khan, Talha M; Liu, Jen-Chieh; Hsu, James; Shim, Jae Won; Dindar, Amir; Youngblood, Jeffrey P; Moon, Robert J; Kippelen, Bernard

2013-01-01

Solar energy is potentially the largest source of renewable energy at our disposal, but significant advances are required to make photovoltaic technologies economically viable and, from a life-cycle perspective, environmentally friendly, and consequently scalable. Cellulose nanomaterials are emerging high-value nanoparticles extracted from plants that are abundant, renewable, and sustainable. Here, we report on the first demonstration of efficient polymer solar cells fabricated on optically transparent cellulose nanocrystal (CNC) substrates. The solar cells fabricated on the CNC substrates display good rectification in the dark and reach a power conversion efficiency of 2.7%. In addition, we demonstrate that these solar cells can be easily separated and recycled into their major components using low-energy processes at room temperature, opening the door for a truly recyclable solar cell technology. Efficient and easily recyclable organic solar cells on CNC substrates are expected to be an attractive technology for sustainable, scalable, and environmentally-friendly energy production.

In situ, real-time thickness measurement techniques for bath-deposited CdS thin films on Cu(In,Ga)Se2

International Nuclear Information System (INIS)

Mann, Jonathan R.; Noufi, Rommel

2012-01-01

A technique has been developed that can measure the thickness of a 30–70 nm thin film of cadmium sulfide on a Cu(In,Ga)Se 2 substrate, in real time, as it grows in a chemical bath. The technique does not damage the film, and can be used to monitor batch depositions and roll-to-roll depositions with equal accuracy. The technique is based on reflectance spectroscopy through the chemical bath. - Highlights: ► Reflection spectra were collected during the chemical bath deposition of CdS. ► Two algorithms were generated to extract film thickness from each spectrum. ► Two conventional techniques were used to independently verify CdS film thicknesses. ► The accuracies of the algorithms are within 7% of the actual thicknesses. ► The algorithms offer in situ, real time thicknesses through the chemical bath.

Formation of BaSi2 heterojunction solar cells using transparent MoOx hole transport layers

Science.gov (United States)

Du, W.; Takabe, R.; Baba, M.; Takeuchi, H.; Hara, K. O.; Toko, K.; Usami, N.; Suemasu, T.

2015-03-01

Heterojunction solar cells that consist of 15 nm thick molybdenum trioxide (MoOx, x < 3) as a hole transport layer and 600 nm thick unpassivated or passivated n-BaSi2 layers were demonstrated. Rectifying current-voltage characteristics were observed when the surface of BaSi2 was exposed to air. When the exposure time was decreased to 1 min, an open circuit voltage of 200 mV and a short circuit current density of 0.5 mA/cm2 were obtained under AM1.5 illumination. The photocurrent density under a reverse bias voltage of -1 V reached 25 mA/cm2, which demonstrates the significant potential of BaSi2 for solar cell applications.

Quantum dot sensitized solar cell based on TiO2/CdS/Ag2S heterostructure

Science.gov (United States)

Pawar, Sachin A.; Patil, Dipali S.; Kim, Jin Hyeok; Patil, Pramod S.; Shin, Jae Cheol

2017-04-01

Quantum dot sensitized solar cell (QDSSC) is fabricated based on a stepwise band structure of TiO2/CdS/Ag2S to improve the photoconversion efficiency of TiO2/CdS system by incorporating a low band gap Ag2S QDs. Vertically aligned TiO2 nanorods assembly is prepared by a simple hydrothermal technique. The formation of CdS and Ag2S QDs over TiO2 nanorods assembly as a photoanode is carried out by successive ionic layer adsorption and reaction (SILAR) technique. The synthesized electrode materials are characterized by XRD, XPS, field emission scanning electron microscopy (FE-SEM), Optical, solar cell and electrochemical performances. The results designate that the QDs of CdS and Ag2S have efficiently covered exterior surfaces of TiO2 nanorods assembly. A cautious evaluation between TiO2/CdS and TiO2/CdS/Ag2S sensitized cells tells that CdS and Ag2S synergetically helps to enhance the light harvesting ability. Under AM 1.5G illumination, the photoanodes show an improved power conversion efficiency of 1.87%, in an aqueous polysulfide electrolyte with short-circuit photocurrent density of 7.03 mA cm-2 which is four fold higher than that of a TiO2/CdS system.

Characterization of solar cells

Energy Technology Data Exchange (ETDEWEB)

Haerkoenen, J.; Tuominen, E.; Nybergh, K.; Ezer, Y.; Yli-Koski, M.; Sinkkonen, J. [Helsinki Univ. of Technology, Otaniemi (Finland). Dept. of Electrical and Communications Engineering

1998-10-01

Photovoltaic research in the Electron Physics Laboratory started in 1993, when laboratory joined the national TEKES/NEMO 2 research program. Since the beginning of the project, characterization as well as experimentally orientated development of the fabrication process of the solar cells were carried out parallery. The process development research started by the initiatives of the Finnish industry. At the moment a large amount of the laboratory personnel works on solar cell research and the financing comes mainly from external projects. The funding for the research has come from TEKES, Ministry of Education, Finnish Academy, GETA graduate school, special equipment grants of the university, and from the laboratory

Danish participation in the IEA solar cell activities

International Nuclear Information System (INIS)

1994-05-01

In the 12-month period 01.05.93 - 30.04.94 the Danish activities in the IEA 'Solar Cell Agreement' consisted in: participation in the Executive Committee (ExCo) and participation in Task 1 'Exchange and Dissemination of Information on PV Power Systems'. ExCo has meetings every half-year and is a coordinating organ for the Agreement. Work on the Task 1 is organized in 4 subtasks: (1) mapping of solar cell activities in the OECD countries and preparation of an IEA handbook on solar cell technology; (2) publishing of a semiannual newsletter about the agreement; (3) an 'executive conference' on solar cell technology and its uses with participation of the decision-makers in respective power industries; (4) information dissemination whenever required. Demonstration projects, like a photovoltaic roof-integrated system connected to the grid. have been implemented. Three larger solar cell projects, subsidized by the EU means, comprehend 'real time monitoring' by a solar system, WHO project 'Solar Energy Applications for Primary Health Care Clinics for Remote Rural Areas' (SAPHIR) and a grid-connected photovoltaic system in a suburb residential settlement. (EG)

Texture-Etched SnO2 Glasses Applied to Silicon Thin-Film Solar Cells

Directory of Open Access Journals (Sweden)

Bing-Rui Wu

2014-01-01

Full Text Available Transparent electrodes of tin dioxide (SnO2 on glasses were further wet-etched in the diluted HCl:Cr solution to obtain larger surface roughness and better light-scattering characteristic for thin-film solar cell applications. The process parameters in terms of HCl/Cr mixture ratio, etching temperature, and etching time have been investigated. After etching process, the surface roughness, transmission haze, and sheet resistance of SnO2 glasses were measured. It was found that the etching rate was increased with the additions in etchant concentration of Cr and etching temperature. The optimum texture-etching parameters were 0.15 wt.% Cr in 49% HCl, temperature of 90°C, and time of 30 sec. Moreover, silicon thin-film solar cells with the p-i-n structure were fabricated on the textured SnO2 glasses using hot-wire chemical vapor deposition. By optimizing the texture-etching process, the cell efficiency was increased from 4.04% to 4.39%, resulting from the increment of short-circuit current density from 14.14 to 15.58 mA/cm2. This improvement in cell performances can be ascribed to the light-scattering effect induced by surface texturization of SnO2.

Research and development for evaluation system of solar cell

Energy Technology Data Exchange (ETDEWEB)

1986-08-01

In order to evaluate the performance and capability of solar cell properly and impartially, the evaluation systems for the performance and reliability have been assured. The results are as follows. 1. Development for performance evaluation method; (1) The international comparisons of standard solar cell calibration methods and our method has been assured to be mostly near to the average value. (2) Experimental solar cell has been made and the indoors and outdoors evaluation of solar cell module have become to be possible with same accuracy. (3) As the spectro-radiometer of high performance have been developed, the measurements of the output of the solar cell module have become possible, monitering spectrum of wide range of natural solar beam. (4) With use of several kinds of standard solar cell, measurement errors have been assured. (5) As for nominal operating cell temperature of module, experimental researches have been done indoors and outdoors and the diffeneces have been assured. 2. Development of reliability evaluation method; (1) In outdoor exposure test, the basic data of the accelerating degradation test have been accumulated and it has been assured that the degradation of crystal type is few. (2) By the acceleration degradation test with use of weathermeter, and temperature and humidity cycling test device, the proceses of degradation have been assured. (3) In the processes of enviromental tests and mechanical strength tests, remarkable degradation has not been recognized.(1 tab)

Sodium enhances indium-gallium interdiffusion in copper indium gallium diselenide photovoltaic absorbers.

Science.gov (United States)

Colombara, Diego; Werner, Florian; Schwarz, Torsten; Cañero Infante, Ingrid; Fleming, Yves; Valle, Nathalie; Spindler, Conrad; Vacchieri, Erica; Rey, Germain; Guennou, Mael; Bouttemy, Muriel; Manjón, Alba Garzón; Peral Alonso, Inmaculada; Melchiorre, Michele; El Adib, Brahime; Gault, Baptiste; Raabe, Dierk; Dale, Phillip J; Siebentritt, Susanne

2018-02-26

Copper indium gallium diselenide-based technology provides the most efficient solar energy conversion among all thin-film photovoltaic devices. This is possible due to engineered gallium depth gradients and alkali extrinsic doping. Sodium is well known to impede interdiffusion of indium and gallium in polycrystalline Cu(In,Ga)Se 2 films, thus influencing the gallium depth distribution. Here, however, sodium is shown to have the opposite effect in monocrystalline gallium-free CuInSe 2 grown on GaAs substrates. Gallium in-diffusion from the substrates is enhanced when sodium is incorporated into the film, leading to Cu(In,Ga)Se 2 and Cu(In,Ga) 3 Se 5 phase formation. These results show that sodium does not decrease per se indium and gallium interdiffusion. Instead, it is suggested that sodium promotes indium and gallium intragrain diffusion, while it hinders intergrain diffusion by segregating at grain boundaries. The deeper understanding of dopant-mediated atomic diffusion mechanisms should lead to more effective chemical and electrical passivation strategies, and more efficient solar cells.

High Efficiency Polymer Solar Cells with Long Operating Lifetimes

KAUST Repository

Peters, Craig H.; Sachs-Quintana, I. T.; Kastrop, John P.; Beaupré , Serge; Leclerc, Mario; McGehee, Michael D.

2011-01-01

Organic bulk-heterojunction solar cells comprising poly[N-9'-hepta-decanyl- 2,7-carbazole-alt-5,5-(4',7'-di-2-thienyl-2', 1',3'-benzothiadiazole) (PCDTBT) are systematically aged and demonstrate lifetimes approaching seven years, which is the longest reported lifetime for polymer solar cells. An experimental set-up is described that is capable of testing large numbers of solar cells, holding each device at its maximum power point while controlling and monitoring the temperature and light intensity. © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

High Efficiency Polymer Solar Cells with Long Operating Lifetimes

KAUST Repository

Peters, Craig H.

2011-04-20

Organic bulk-heterojunction solar cells comprising poly[N-9\\'-hepta-decanyl- 2,7-carbazole-alt-5,5-(4\\',7\\'-di-2-thienyl-2\\', 1\\',3\\'-benzothiadiazole) (PCDTBT) are systematically aged and demonstrate lifetimes approaching seven years, which is the longest reported lifetime for polymer solar cells. An experimental set-up is described that is capable of testing large numbers of solar cells, holding each device at its maximum power point while controlling and monitoring the temperature and light intensity. © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bias-dependent high saturation solar LBIC scanning of solar cells

Energy Technology Data Exchange (ETDEWEB)

Vorster, F.J.; van Dyk, E.E. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa)

2007-06-15

A light beam-induced current measurement system that uses concentrated solar radiation as a beam probe to map spatially distributed defects on a solar cell has been developed and tested [F.J. Vorster, E.E. van Dyk, Rev. Sci. Instrum., submitted for review]. The induced current response from a flat plate EFG Si solar cell was mapped as a function of surface position and cell bias by using a solar light beam induced current (S-LBIC) mapping system while at the same time dynamically biasing the whole cell with an external voltage. This paper examines the issues relating to transient capacitive effects as well as the electrical behaviour of typical solar cell defect mechanisms under spot illumination. By examining the bias dependence of the S-LBIC maps, various defect mechanisms of photovoltaic (PV) cells under concentrated solar irradiance may be identified. The techniques employed to interpret the spatially distributed IV curves as well as initial results are discussed. (author)

CIGS Thin Film Solar Cells, phase 2 Uppsala University Final report 2006-01-01 - 2007-06-14

Energy Technology Data Exchange (ETDEWEB)

Edoff, Marika (Thin Film Solar Cell group, Dep. Technical Sciences, Uppsala Univ., P.O. Box 534, SE-751 21 Uppsala (Sweden)) (and others)

2007-06-15

The project CIGS Thin Film Solar Cells, phase 2 has been going on for 18,5 months and was interrupted in advance on the 14th of June, 2007. The decision to shorten the period was taken by the board of the Swedish Energy Agency the 14th of February. It was decided to reevaluate and re-direct the financial support to the group. A new project, CIGS Thin Film Solar Cells, phase 3, superseded this project and will go on for the initially planned project period (until 2009-12-31). During the project much of the focus has been on research on Cd-free buffer layers, with an emphasis on the interface properties between the CIGS and the buffer layer. (CIGS is a commonly used acronym for Cu(In,Ga)Se{sub 2}, which is the active absorption layer in this type of solar cells) The combination of high quality CIGS and the new buffer layers has been another field of interest. CIGS solar cell module development and computer modelling of solar cells and modules has been the third major research area. The results show that the group still holds a position as one of the leaders in the world in this field. The 18.5 % efficient Cd-free solar cell, which was obtained and independently confirmed is only one percent away from the world record and in addition it is Cd-free using a Zn(O,S) buffer layer (the world record from NREL contains Cd). By alloying ZnO with MgO instead of ZnS almost equally good results can be achieved. During the last half year an 18.1 % cell has been measured with a (Zn,Mg)O buffer layer. Solar cell module technology includes several research issues, both fundamental as e.g. modelling of cell voltage and losses as a function of distance from interconnect to interconnect, but also more development as e.g. encapsulation routines. The harsh environment test (damp heat test) run at 85 deg C and 85 % relative humidity for 1000 hours was passed for both a small (12.5x12.5 cm2) and a large (27.5x30 cm2) module within the degradation limits stated by the IEC standards, using

Solar cells

International Nuclear Information System (INIS)

1980-01-01

A method of producing solar cells is described which consists of producing a substantially monocrystalline tubular body of silicon or other suitable semiconductor material, treating this body to form an annular rectifying junction and then cutting it longitudinally to form a number of nearly flat ribbons from which the solar cells are fabricated. The P=N rectifying junction produced by the formation of silicon dioxide on the layers at the inner and outer surfaces of the body can be formed by ion-implantation or diffusion. (U.K.)

π-Bridge-Independent 2-(Benzo[c][1,2,5]thiadiazol-4-ylmethylene)malononitrile-Substituted Nonfullerene Acceptors for Efficient Solar Cells

KAUST Repository

Wang, Kai

2016-02-25

Molecular acceptors are promising alternatives to fullerenes (e.g. PC61/71BM) in the fabrication of high-efficiency bulk-heterojunction (BHJ) solar cells. While solution-processed polymer-fullerene BHJ devices have recently met the 10% efficiency threshold, molecular acceptors have yet to prove comparably efficient with polymer donors. At this point in time, it is important to forge a better understanding of the design parameters that directly impact small-molecule (SM) acceptor performance in BHJ solar cells. In this report, we show that 2-(benzo[c][1,2,5]thiadiazol-4-ylmethylene)malononitrile (BM)-terminated SM acceptors can achieve efficiencies as high as 5.3% in BHJ solar cells with the polymer donor PCE10. Through systematic device optimization and characterization studies, we find that the nonfull-erene analogues (FBM, CBM and CDTBM) all perform comparably well, independent of the molecular structure and electronics of the π-bridge that links the two electron-deficient BM end groups. With estimated electron affinities within range of those of common fullerenes (4.0-4.3 eV), and a wider range of ionization potentials (6.2-5.6 eV), the SM acceptors absorb in the visible spectrum and effectively contribute to the BHJ device photocurrent. BM-substituted SM acceptors are promising alterna-tives to fullerenes in solution-processed BHJ solar cells.

π-Bridge-Independent 2-(Benzo[c][1,2,5]thiadiazol-4-ylmethylene)malononitrile-Substituted Nonfullerene Acceptors for Efficient Solar Cells

KAUST Repository

Wang, Kai; Firdaus, Yuliar; Babics, Maxime; Cruciani, Federico; Saleem, Qasim; El Labban, Abdulrahman; Alamoudi, Maha; Marszalek, Tomasz; Pisula, Wojciech; Laquai, Fré dé ric; Beaujuge, Pierre

2016-01-01

Molecular acceptors are promising alternatives to fullerenes (e.g. PC61/71BM) in the fabrication of high-efficiency bulk-heterojunction (BHJ) solar cells. While solution-processed polymer-fullerene BHJ devices have recently met the 10% efficiency threshold, molecular acceptors have yet to prove comparably efficient with polymer donors. At this point in time, it is important to forge a better understanding of the design parameters that directly impact small-molecule (SM) acceptor performance in BHJ solar cells. In this report, we show that 2-(benzo[c][1,2,5]thiadiazol-4-ylmethylene)malononitrile (BM)-terminated SM acceptors can achieve efficiencies as high as 5.3% in BHJ solar cells with the polymer donor PCE10. Through systematic device optimization and characterization studies, we find that the nonfull-erene analogues (FBM, CBM and CDTBM) all perform comparably well, independent of the molecular structure and electronics of the π-bridge that links the two electron-deficient BM end groups. With estimated electron affinities within range of those of common fullerenes (4.0-4.3 eV), and a wider range of ionization potentials (6.2-5.6 eV), the SM acceptors absorb in the visible spectrum and effectively contribute to the BHJ device photocurrent. BM-substituted SM acceptors are promising alterna-tives to fullerenes in solution-processed BHJ solar cells.

Development and testing of shingle-type solar cell modules. Quarterly report No. 2

Energy Technology Data Exchange (ETDEWEB)

Shepard, N.F.

1978-01-05

The details of a shingle module design which produces in excess of 97 watts/m/sup 2/ of module area at 1 kW/m/sup 2/ insolation and at 60/sup 0/C are reported. This selected design employs a tempered glass coverplate to provide the primary solar cell structural support. The use of the B.F. Goodrich FLEXSEAL roofing system as the outer skin of the shingle substrate provides a high confidence of achieving the 15 year service life goal. The fabrication and testing of a preproduction module of this design has demonstrated that this selected approach will meet the environmental testing requirements imposed by the contract. Attempts to fabricate a preproduction module of an alternative design, which embeds the solar cell assembly within a methyl methacrylate casting, proved unsuccessful.

Optical Design of Textured Thin-Film CIGS Solar Cells with Nearly-Invisible Nanowire Assisted Front Contacts

Directory of Open Access Journals (Sweden)

Joop van Deelen

2017-04-01

Full Text Available The conductivity of transparent front contacts can be improved by patterned metallic nanowires, albeit at the cost of optical loss. The associated optical penalty can be strongly reduced by texturization of the cell stack. Remarkably, the nanowires themselves are not textured and not covered in our design. This was shown by optical modeling where the width of the nanowire, the texture height and the texture period were varied in order to obtain a good insight into the general trends. The optical performance can be improved dramatically as the reflection, which is the largest optical loss, can be reduced by 95% of the original value. The spectra reveal absorption in the Cu(In,GaSe2 (CIGS layer of 95% and reflection below 2% over a large part of the spectrum. In essence, a virtually black CIGS cell stack can be achieved for textured cells with a metal nanogrid. Moreover, it turned out that the ratio between the width of the nanowire and the height of the texture is a critical parameter for optical losses.

Towards printed perovskite solar cells with cuprous oxide hole transporting layers

DEFF Research Database (Denmark)

Wang, Yan; Xia, Zhonggao; Liang, Jun

2015-01-01

Solution-processed p-type metal oxide materials have shown great promise in improving the stability of perovskite-based solar cells and offering the feasibility for a low cost printing fabrication process. Herein, we performed a device modeling study on planar perovskite solar cells with cuprous...... oxide (Cu2O) hole transporting layers (HTLs) by using a solar cell simulation program, wxAMPS. The performance of a Cu2O/perovskite solar cell was correlated to the material properties of the Cu2O HTL, such as thickness, carrier mobility, mid-gap defect, and doping...

New mounting improves solar-cell efficiency

Science.gov (United States)

Shepard, N. F., Jr.

1980-01-01

Method boosts output by about 20 percent by trapping and redirecting solar radiation without increasing module depth. Mounted solar-cell array is covered with internally reflecting plate. Plate is attached to each cell by transparent adhesive, and space between cells is covered with layer of diffusely reflecting material. Solar energy falling on space between cells is diffused and reflected internally by plate until it is reflected onto solar cell.

Application of porous silicon in solar cell

Science.gov (United States)

Maniya, Nalin H.; Ashokan, Jibinlal; Srivastava, Divesh N.

2018-05-01

Silicon is widely used in solar cell applications with over 95% of all solar cells produced worldwide composed of silicon. Nanostructured thin porous silicon (PSi) layer acting as anti-reflecting coating is used in photovoltaic solar cells due to its advantages including simple and low cost fabrication, highly textured surfaces enabling lowering of reflectance, controllability of thickness and porosity of layer, and high surface area. PSi layers have previously been reported to reduce the reflection of light and replaced the conventional anti-reflective coating layers on solar cells. This can essentially improve the efficiency and decrease the cost of silicon solar cells. Here, we investigate the reflectance of different PSi layers formed by varying current density and etching time. PSi layers were formed by a combination of current density including 60 and 80 mA/cm2 and time for fabrication as 2, 4, 6, and 8 seconds. The fabricated PSi layers were characterized using reflectance spectroscopy and field emission scanning electron microscopy. Thickness and pore size of PSi layer were increased with increase in etching time and current density, respectively. The reflectance of PSi layers was decreased with increase in etching time until 6 seconds and increased again after 6 seconds, which was observed across both the current density. Reduction in reflectance indicates the increase of absorption of light by silicon due to the thin PSi layer. In comparison with the reflectance of silicon wafer, PSi layer fabricated at 80 mA/cm2 for 6 seconds gave the best result with reduction in reflectance up to 57%. Thus, the application of PSi layer as an effective anti-reflecting coating for the fabrication of solar cell has been demonstrated.

Nanocluster production for solar cell applications

International Nuclear Information System (INIS)

Al Dosari, Haila M.; Ayesh, Ahmad I.

2013-01-01

This research focuses on the fabrication and characterization of silver (Ag) and silicon (Si) nanoclusters that might be used for solar cell applications. Silver and silicon nanoclusters have been synthesized by means of dc magnetron sputtering and inert gas condensation inside an ultra-high vacuum compatible system. We have found that nanocluster size distributions can be tuned by various source parameters, such as the sputtering discharge power, flow rate of argon inert gas, and aggregation length. Quadrupole mass filter and transmission electron microscopy were used to evaluate the size distribution of Ag and Si nanoclusters. Ag nanoclusters with average size in the range of 3.6–8.3 nm were synthesized (herein size refers to the nanocluster diameter), whereas Si nanoclusters' average size was controlled to range between 2.9 and 7.4 nm by controlling the source parameters. This work illustrates the ability of controlling the Si and Ag nanoclusters' sizes by proper optimization of the operation conditions. By controlling nanoclusters' sizes, one can alter their surface properties to suit the need to enhance solar cell efficiency. Herein, Ag nanoclusters were deposited on commercial polycrystalline solar cells. Short circuit current (I SC ), open circuit voltage (V OC ), fill factor, and efficiency (η) were obtained under light source with an intensity of 30 mW/cm 2 . A 22.7% enhancement in solar cell efficiency could be measured after deposition of Ag nanoclusters, which demonstrates that Ag nanoclusters generated in this work are useful to enhance solar cell efficiency

Multijunction Solar Cell Technology for Mars Surface Applications

Science.gov (United States)

Stella, Paul M.; Mardesich, Nick; Ewell, Richard C.; Mueller, Robert L.; Endicter, Scott; Aiken, Daniel; Edmondson, Kenneth; Fetze, Chris

2006-01-01

Solar cells used for Mars surface applications have been commercial space qualified AM0 optimized devices. Due to the Martian atmosphere, these cells are not optimized for the Mars surface and as a result operate at a reduced efficiency. A multi-year program, MOST (Mars Optimized Solar Cell Technology), managed by JPL and funded by NASA Code S, was initiated in 2004, to develop tools to modify commercial AM0 cells for the Mars surface solar spectrum and to fabricate Mars optimized devices for verification. This effort required defining the surface incident spectrum, developing an appropriate laboratory solar simulator measurement capability, and to develop and test commercial cells modified for the Mars surface spectrum. This paper discusses the program, including results for the initial modified cells. Simulated Mars surface measurements of MER cells and Phoenix Lander cells (2007 launch) are provided to characterize the performance loss for those missions. In addition, the performance of the MER rover solar arrays is updated to reflect their more than two (2) year operation.

Quantum dot solar cells

CERN Document Server

Wu, Jiang

2013-01-01

The third generation of solar cells includes those based on semiconductor quantum dots. This sophisticated technology applies nanotechnology and quantum mechanics theory to enhance the performance of ordinary solar cells. Although a practical application of quantum dot solar cells has yet to be achieved, a large number of theoretical calculations and experimental studies have confirmed the potential for meeting the requirement for ultra-high conversion efficiency. In this book, high-profile scientists have contributed tutorial chapters that outline the methods used in and the results of variou

Quantum dot solar cell