WorldWideScience

Sample records for cubic sic 3c-sic

  1. Synchronistic preparation of fibre-like SiC and cubic-ZrO{sub 2}/SiC composite from zircon via carbothermal reduction process

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Youguo; Liu, Yangai [School of Materials Science and Technology, China University of Geosciences (Beijing), Beijing 100083 (China); Huang, Zhaohui, E-mail: huang118@cugb.edu.cn [School of Materials Science and Technology, China University of Geosciences (Beijing), Beijing 100083 (China); Fang, Minghao [School of Materials Science and Technology, China University of Geosciences (Beijing), Beijing 100083 (China); Hu, Xiaozhi [School of Mechanical and Chemical Engineering, University of Western Australia, Perth, WA 6009 (Australia); Yin, Li; Huang, Juntong [School of Materials Science and Technology, China University of Geosciences (Beijing), Beijing 100083 (China)

    2013-01-15

    Graphical abstract: Display Omitted Highlights: ► Zircon carbothermal reduction was carried out in a tailor-made device at high-temperature air atmosphere. ► Fibre-like SiC and cubic-ZrO{sub 2}/SiC composite were obtained synchronically. ► Zirconium and silicon in zircon ore was initial separated. ► [SiO{sub 4}] was mutated to fibre-like SiC, while [ZrO{sub 8}] was transformed to cubic ZrO{sub 2}. ► The SiC were surprisingly enriched in the reducing atmosphere charred coal particles layers by gas–solid reaction. -- Abstract: Fibre-like SiC and cubic-ZrO{sub 2}/SiC composite were prepared respectively from zircon with yttrium oxide addition via carbothermal reduction process at 1600 °C for 4 h in an air atmosphere furnace, where the green samples were immerged in charred coal particles inside a high-temperature enclosed corundum crucible. The reaction products were characterized by XRD, XRF, XPS and SEM. The results indicate that ZrO{sub 2} in the products was mainly existed in the form of cubic phase. The reacted samples mainly contain cubic ZrO{sub 2}, β-SiC and trace amounts of zircon, with the SiC accounting for 14.8 wt%. Furthermore, a large quantity of fibre-like SiC was surprisingly found to concentrate in the charred coal particles layers around the samples. This study obtains fibre-like SiC and cubic-ZrO{sub 2}/SiC composite synchronically from zircon via carbothermal reduction process, which also bring a value-added high-performance application for natural zircon.

  2. Growth and characterization of cubic SiC single-crystal films on Si

    Science.gov (United States)

    Powell, J. Anthony; Matus, L. G.; Kuczmarski, Maria A.

    1987-01-01

    Morphological and electrical characterization results are presented for cubic SiC films grown by chemical vapor deposition on single-crystal Si substrates. The films, up to 40 microns thick, were characterized by optical microscopy, (SEM), (TEM), electron channeling, surface profilometry, and Hall measurements. A variety of morphological features observed on the SiC films are described. Electrical measurements showed a decrease in the electron mobility with increasing electron carrier concentration, similar to that observed in Si. Room-temperature electron mobilities up to 520 sq cm/V-s (at an electron carrier concentration of 5 x 10 to the 16th/cu cm) were measured. Finally, a number of parameters believed to be important in the growth process were investigated, and some discussion is given of their possible effects on the film characteristics.

  3. Structural properties of undoped and doped cubic GaN grown on SiC(001)

    OpenAIRE

    Martínez-Guerrero, Esteban; Bellet-Amalric, E.; Martinet, L.; Feuillet, G.; Daudin, B.

    2002-01-01

    Transmission electron microscopy and x-ray diffraction measurements reveal the presence of stacking faults ~SFs! in undoped cubic GaN thin layers. We demonstrate the importance of the defects in the interfacial region of the films by showing that the SFs act as nucleation sites for precipitates of residual impurities such as C and Si present in the GaN layers grown on SiC~001! substrates. We used the imaging secondary ion mass spectroscopy technique to locate these impurities. The systemat...

  4. Bare and boron-doped cubic silicon carbide nanowires for electrochemical detection of nitrite sensitively.

    Science.gov (United States)

    Yang, Tao; Zhang, Liqin; Hou, Xinmei; Chen, Junhong; Chou, Kuo-Chih

    2016-04-25

    Fabrication of eletrochemical sensors based on wide bandgap compound semiconductors has attracted increasing interest in recent years. Here we report for the first time electrochemical nitrite sensors based on cubic silicon carbide (SiC) nanowires (NWs) with smooth surface and boron-doped cubic SiC NWs with fin-like structure. Multiple techniques including scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and electron energy loss spectroscopy (EELS) were used to characterize SiC and boron-doped SiC NWs. As for the electrochemical behavior of both SiC NWs electrode, the cyclic voltammetric results show that both SiC electrodes exhibit wide potential window and excellent electrocatalytic activity toward nitrite oxidation. Differential pulse voltammetry (DPV) determination reveals that there exists a good linear relationship between the oxidation peak current and the concentration in the range of 50-15000 μmoL L(-1) (cubic SiC NWs) and 5-8000 μmoL L(-1) (B-doped cubic SiC NWs) with the detection limitation of 5 and 0.5 μmoL L(-1) respectively. Compared with previously reported results, both as-prepared nitrite sensors exhibit wider linear response range with comparable high sensitivity, high stability and reproducibility.

  5. Kronig-Penney-like description for band gap variation in SiC polytypes

    Science.gov (United States)

    Backes, W. H.; de Nooij, F. C.; Bobbert, P. A.; van Haeringen, W.

    1996-02-01

    A one-dimensional Kronig-Penney-like model for envelope wave functions is presented to explain the band gap variation of SiC polytypes. In this model the envelope functions obey discontinuous boundary conditions. The electronic band gaps of cubic and several hexagonal and rhombohedral SiC polytypes are calculated. The polytypic superlattices are assumed to be stackings of differently sized and orientated cubic SiC segments. The empirical Choyke-Hamilton-Patrick relation is understood and deviating trends for small hexagonalities and rhombohedral modifications are predicted.

  6. Fluorescent SiC as a New Platform for Visible and Infrared Emitting Applications as Well as Prospective Photovoltaics

    DEFF Research Database (Denmark)

    Syvaejaervi, Mikael; Sun, Jianwu; Wellmann, Peter

    fabrication. In addition, the cubic silicon carbide offers a potential solar cell material. Boron doped cubic SiC fits as a suitable concept for impurity (intermediate bandgap) photovoltaics with an efficiency up to 48-60% depending on the theoretical model. The requirement is a high material quality to have...... growth rate of 1 mm per hour. The result is a carrier lifetime of 8.2 μs, and surprisingly this is even higher than in 4H-SiC when comparing carrier lifetimes in asgrown materials. Such material paves the way to explore cubic SiC for photovoltaics....

  7. Photonic Crystal Cavities in Cubic Polytype Silicon Carbide Films

    CERN Document Server

    Radulaski, Marina; Buckley, Sonia; Rundquist, Armand; Provine, J; Alassaad, Kassem; Ferro, Gabriel; Vučković, Jelena

    2013-01-01

    We present the design, fabrication, and characterization of high quality factor and small mode volume planar photonic crystal cavities from cubic (3C) thin films (thickness ~ 200 nm) of silicon carbide (SiC) grown epitaxially on a silicon substrate. We demonstrate cavity resonances across the telecommunications band, with wavelengths from 1250 - 1600 nm. Finally, we discuss possible applications in nonlinear optics, optical interconnects, and quantum information science.

  8. Cubic Subalgebras and Cubic Closed Ideals of B-algebras

    Directory of Open Access Journals (Sweden)

    Tapan Senapati

    2015-06-01

    Full Text Available In this paper, the concept of cubic set to subalgebras, ideals and closed ideals of B-algebras are introduced. Relations among cubic subalgebras with cubic ideals and cubic closed ideals of B-algebras investigated. The homomorphic image and inverse image of cubic subalgebras, ideals are studied and some related properties are investigated. Also, the product of cubic B-algebras are investigated.

  9. SICs and Algebraic Number Theory

    Science.gov (United States)

    Appleby, Marcus; Flammia, Steven; McConnell, Gary; Yard, Jon

    2017-08-01

    We give an overview of some remarkable connections between symmetric informationally complete measurements (SIC-POVMs, or SICs) and algebraic number theory, in particular, a connection with Hilbert's 12th problem. The paper is meant to be intelligible to a physicist who has no prior knowledge of either Galois theory or algebraic number theory.

  10. Microstructure characterization of SiC nanowires as reinforcements in composites

    Energy Technology Data Exchange (ETDEWEB)

    Dong, Ronghua [Department of Material Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Yang, Wenshu, E-mail: yws001003@163.com [Department of Material Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Wu, Ping [Northwest Institute of Nuclear Technology, Xi' an, 710024 (China); Hussain, Murid [Department of Chemical Engineering, COMSATS Institute of Information Technology, M.A. Jinnah Building, Defence Road, Off Raiwind Road, Lahore 54000 (Pakistan); Xiu, Ziyang; Wu, Gaohui; Wang, Pingping [Department of Material Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China)

    2015-05-15

    SiC nanowires have been rarely investigated or explored along their axial direction by transmission electron microscopy (TEM). Here we report the investigation of the cross-section microstructure of SiC nanowires by embedding them into Al matrix. Morphology of SiC nanowires was cylindrical with smooth surface or bamboo shape. Cubic (3C-SiC) and hexagonal structure (2H-SiC) phases were detected by X-ray diffraction (XRD) analysis. High density stacking faults were observed in both the cylindrical and bamboo shaped nanowires which were perpendicular to their axial direction. Selected area electron diffraction (SAED) patterns of the cylindrical and bamboo shaped SiC nanowires both in the perpendicular and parallel direction to the axial direction were equivalent in the structure. After calculation and remodeling, it has been found that the SAED patterns were composed of two sets of diffraction patterns, corresponding to 2H-SiC and 3C-SiC, respectively. Therefore, it could be concluded that the SiC nanowires are composed of a large number of small fragments that are formed by hybrid 3C-SiC and 2H-SiC structures. - Graphical abstract: Display Omitted - Highlights: • Cross-section microstructure of SiC nanowires was observed in Al composite. • Cylindrical with smooth surface or bamboo shape SiC nanowires were found. • The cylindrical and bamboo shaped SiC nanowires were equivalent in structure. • Structure of SiC nanowires was remodeled. • SiC nanowires are composed of hybrid 3C-SiC and 2H-SiC structures.

  11. Einsteinian cubic gravity

    Science.gov (United States)

    Bueno, Pablo; Cano, Pablo A.

    2016-11-01

    We drastically simplify the problem of linearizing a general higher-order theory of gravity. We reduce it to the evaluation of its Lagrangian on a particular Riemann tensor depending on two parameters, and the computation of two derivatives with respect to one of those parameters. We use our method to construct a D -dimensional cubic theory of gravity which satisfies the following properties: (1) it shares the spectrum of Einstein gravity, i.e., it only propagates a transverse and massless graviton on a maximally symmetric background; (2) it is defined in the same way in general dimensions; (3) it is neither trivial nor topological in four dimensions. Up to cubic order in curvature, the only previously known theories satisfying the first two requirements are the Lovelock ones. We show that, up to cubic order, there exists only one additional theory satisfying requirements (1) and (2). Interestingly, this theory is, along with Einstein gravity, the only one which also satisfies (3).

  12. Guarded Cubical Type Theory

    DEFF Research Database (Denmark)

    Birkedal, Lars; Bizjak, Aleš; Clouston, Ranald;

    2016-01-01

    This paper improves the treatment of equality in guarded dependent type theory (GDTT), by combining it with cubical type theory (CTT). GDTT is an extensional type theory with guarded recursive types, which are useful for building models of program logics, and for programming and reasoning with co...

  13. Room temperature quantum emission from cubic silicon carbide nanoparticles.

    Science.gov (United States)

    Castelletto, Stefania; Johnson, Brett C; Zachreson, Cameron; Beke, David; Balogh, István; Ohshima, Takeshi; Aharonovich, Igor; Gali, Adam

    2014-08-26

    The photoluminescence (PL) arising from silicon carbide nanoparticles has so far been associated with the quantum confinement effect or to radiative transitions between electronically active surface states. In this work we show that cubic phase silicon carbide nanoparticles with diameters in the range 45-500 nm can host other point defects responsible for photoinduced intrabandgap PL. We demonstrate that these nanoparticles exhibit single photon emission at room temperature with record saturation count rates of 7 × 10(6) counts/s. The realization of nonclassical emission from SiC nanoparticles extends their potential use from fluorescence biomarker beads to optically active quantum elements for next generation quantum sensing and nanophotonics. The single photon emission is related to single isolated SiC defects that give rise to states within the bandgap.

  14. Guarded Cubical Type Theory

    DEFF Research Database (Denmark)

    Birkedal, Lars; Bizjak, Aleš; Clouston, Ranald;

    2016-01-01

    This paper improves the treatment of equality in guarded dependent type theory (GDTT), by combining it with cubical type theory (CTT). GDTT is an extensional type theory with guarded recursive types, which are useful for building models of program logics, and for programming and reasoning...... with coinductive types. We wish to implement GDTT with decidable type-checking, while still supporting non-trivial equality proofs that reason about the extensions of guarded recursive constructions. CTT is a variation of Martin-L\\"of type theory in which the identity type is replaced by abstract paths between...... terms. CTT provides a computational interpretation of functional extensionality, is conjectured to have decidable type checking, and has an implemented type-checker. Our new type theory, called guarded cubical type theory, provides a computational interpretation of extensionality for guarded recursive...

  15. Guarded Cubical Type Theory

    DEFF Research Database (Denmark)

    Birkedal, Lars; Bizjak, Aleš; Clouston, Ranald;

    2016-01-01

    This paper improves the treatment of equality in guarded dependent type theory (GDTT), by combining it with cubical type theory (CTT). GDTT is an extensional type theory with guarded recursive types, which are useful for building models of program logics, and for programming and reasoning...... with coinductive types. We wish to implement GDTT with decidable type checking, while still supporting non-trivial equality proofs that reason about the extensions of guarded recursive constructions. CTT is a variation of Martin-L\\"of type theory in which the identity type is replaced by abstract paths between...... terms. CTT provides a computational interpretation of functional extensionality, enjoys canonicity for the natural numbers type, and is conjectured to support decidable type-checking. Our new type theory, guarded cubical type theory (GCTT), provides a computational interpretation of extensionality...

  16. Methods for growth of relatively large step-free SiC crystal surfaces

    Science.gov (United States)

    Neudeck, Philip G. (Inventor); Powell, J. Anthony (Inventor)

    2002-01-01

    A method for growing arrays of large-area device-size films of step-free (i.e., atomically flat) SiC surfaces for semiconductor electronic device applications is disclosed. This method utilizes a lateral growth process that better overcomes the effect of extended defects in the seed crystal substrate that limited the obtainable step-free area achievable by prior art processes. The step-free SiC surface is particularly suited for the heteroepitaxial growth of 3C (cubic) SiC, AlN, and GaN films used for the fabrication of both surface-sensitive devices (i.e., surface channel field effect transistors such as HEMT's and MOSFET's) as well as high-electric field devices (pn diodes and other solid-state power switching devices) that are sensitive to extended crystal defects.

  17. Investigation of the SiC thin films synthetized by Thermionic Vacuum Arc method (TVA)

    Science.gov (United States)

    Ciupina, V.; Vladoiu, R.; Lungu, C. P.; Dinca, V.; Contulov, M.; Mandes, A.; Popov, P.; Prodan, G.

    2012-04-01

    Thermionic Vacuum Arc method (TVA) was used for the first time to prepare SiC thin films. This method is very suitable for deposition of high purity thin films with compact structure and extremely smooth in vacuum conditions. The nanocomposites were investigated using Transmission Electron Microscopy (TEM) analyses provided with HR-TEM and SAED facilities. The structure of the films can be indexed as following three forms: cubic structure of SiC (F4-3m) a = 0.4348 nm, cubic Si (Fd3m) a = 0.54307 nm and graphite (P63/mmc) a = 0.2456 nm; c = 0.6696 nm. The morphology, topography, wettability and wear properties were also performed by SEE system and by Raman Spectroscopy, increasing the interest for emerging applications.

  18. Surface Characterization of 3C-SiC Mesa Heterofilms: Evidence for Growth by Edge/Corner Nucleation Mechanism

    Science.gov (United States)

    Trunek, Andrew J.; Neudeck, Philip G.; Spry, David J.; Powell, J. Anothny

    2003-01-01

    This paper presents the first detailed observations of unique surface morphologies of 3C-Sic films grown on 4W6H-SIC mesas by the step-free surface heteroepitaxy technique. The top surfaces of 3C-Sic films were extensively studied by optical microscopy and atomic force microscopy (AFM) as both film thickness (i.e,, growth time) and growth temperature (i.e., terrace nucleation rate) were varied following complete coverage of each 4W6H mesa by an initial 3C-Sic film. Almost all surface steps observed by AFM were 0.25 nm, the height of a single Si-C bilayer. However, strikingly different step patterns were observed, suggesting that radically different processes dominate the nucleation of new 3C-Sic bilayers on top of existing 3C-Sic film surfaces.

  19. Anisotropic cubic curvature couplings

    CERN Document Server

    Bailey, Quentin G

    2016-01-01

    To complement recent work on tests of spacetime symmetry in gravity, cubic curvature couplings are studied using an effective field theory description of spacetime-symmetry breaking. The associated mass dimension 8 coefficients for Lorentz violation studied do not result in any linearized gravity modifications and instead are revealed in the first nonlinear terms in an expansion of spacetime around a flat background. We consider effects on gravitational radiation through the energy loss of a binary system and we study two-body orbital perturbations using the post-Newtonian metric. Some effects depend on the internal structure of the source and test bodies, thereby breaking the Weak Equivalence Principle for self-gravitating bodies. These coefficients can be measured in solar-system tests, while binary-pulsar systems and short-range gravity tests are particularly sensitive.

  20. SiC Conversion Coating Prepared from Silica-Graphite Reaction

    Directory of Open Access Journals (Sweden)

    Back-Sub Sung

    2017-01-01

    Full Text Available The β-SiC conversion coatings were successfully synthesized by the SiO(v-graphite(s reaction between silica powder and graphite specimen. This paper is to describe the effects on the characteristics of the SiC conversion coatings, fabricated according to two different reaction conditions. FE-SEM, FE-TEM microstructural morphologies, XRD patterns, pore size distribution, and oxidation behavior of the SiC-coated graphite were investigated. In the XRD pattern and SAD pattern, the coating layers showed cubic SiC peak as well as hexagonal SiC peak. The SiC coatings showed somewhat different characteristics with the reaction conditions according to the position arrangement of the graphite samples. The SiC coating on graphite, prepared in reaction zone (2, shows higher intensity of beta-SiC main peak (111 in XRD pattern as well as rather lower porosity and smaller main pore size peak under 1 μm.

  1. Investigations of Ar ion irradiation effects on nanocrystalline SiC thin films

    Energy Technology Data Exchange (ETDEWEB)

    Craciun, V., E-mail: valentin.craciun@inflpr.ro [Laser Department, National Institute for Laser, Plasma, and Radiation Physics, Bucharest-Magurele (Romania); Craciun, D.; Socol, G. [Laser Department, National Institute for Laser, Plasma, and Radiation Physics, Bucharest-Magurele (Romania); Behdad, S.; Boesl, B. [Department of Mechanical and Materials Engineering, Florida International University, Miami, FL 33174 (United States); Himcinschi, C. [Institute of Theoretical Physics, TU Bergakademie Freiberg, Freiberg (Germany); Makino, H. [Research Institute, Kochi University of Technology, Kami, Kochi 782-8502 (Japan); Socol, M. [National Institute for Materials Physics, Bucharest-Magurele (Romania); Simeone, D. [CEA/DEN/DANS/DM2S/SRMA/LA2M-LRC CARMEN CEN, Saclay (France); CNRS/SPMS UMR8785 LRC CARMEN, Ecole Centrale de Paris, 92292 Chatenay Malabry (France)

    2016-06-30

    Highlights: • Thin polycrystalline SiC films grown by the pulsed laser deposition technique were irradiated by 800 keV Ar ions at a dose of 2.6 × 10{sup 14} at/cm{sup 2}. • The SiC films hardness and Young modulus values significantly decreased after irradiation. • Glancing X-ray diffraction investigations showed a partial transformation of the SiC hexagonal phase into the cubic phase. • Smooth PLD grown thin films are excellent for radiation effects investigations using XRR, GIXRD and nanoindentation techniques. - Abstract: The effects of 800 keV Ar ion irradiation on thin nanocrystalline SiC films grown on (100) Si substrates using the pulsed laser deposition (PLD) technique were investigated. On such PLD grown films, which were very dense, flat and smooth, X-ray reflectivity, glancing incidence X-ray diffraction and nanoindentation investigations were easily performed to evaluate changes induced by irradiation on the density, surface roughness, crystalline structure, and mechanical properties. Results indicated that the SiC films retained their crystalline nature, the cubic phase partially transforming into the hexagonal phase, which had a slightly higher lattice parameter then the as-deposited films. Simulations of X-ray reflectivity curves indicated a 3% decrease of the films density after irradiation. Nanoindentation results showed a significant decrease of the hardness and Young's modulus values with respect to those measured on as-deposited films. Raman and X-ray photoelectron spectroscopy investigations found an increase of the C−C bonds and a corresponding decrease of the Si−C bonds in the irradiated area, which could explain the degradation of mechanical properties.

  2. Fabrication and Properties of Ti3SiC2/SiC Composites

    Institute of Scientific and Technical Information of China (English)

    YIN Hongfeng; FAN Qiang; REN Yun; ZHANG Junzhan

    2008-01-01

    Ti3SiC2/SiC composites were fabricated by reactive hot pressing method. Effects of hot pressing temperature, the content and panicle size of SiC on phase composition, densification, mechanical properties and behavior of stress-strain of the composites were investigated. The results showed that:(1)Hot-pressing temperature influenced the phase composition of Ti3SiC2/SiC composites. The flexural strength and fracture toughness of composites increased with hot pressing temperature.(2)It became more difficult for the composites to densify when the content of SiC in composites increased. It need be sintered at higher temperature to get denser composite. The flexural strength and fracture toughness of composites increased when the content of SiC added in composites increased. However, when the content of SiC reached 50 wt%, the flexural strength and fracture toughness of composites decreased due to high content of pore in composites.(3)When the content of SiC was same, Ti3SiC2/SiC composites were denser while the particle size of SiC added in composites is 12.8μm compared with the composites that the particle size of SiC added is 3μm.The flexural strength and fracture toughness of composites increased with the increase of particle size of SiC added in composites.(4)Ti3SiC2/SiC composites were non-brittle fracture at room temperature.

  3. Polycrystalline SiC as source material for the growth of fluorescent SiC layers

    DEFF Research Database (Denmark)

    Kaiser, M.; Hupfer, T.; Jokubavicus, V.;

    2013-01-01

    Polycrystalline doped SiC act as source for fluorescent SiC. We have studied the growth of individual grains with different polytypes in the source material. We show an evolution and orientation of grains of different polytypes in polycrystalline SiC ingots grown by the Physical Vapor Transport...

  4. A Cubic Tree Taper Model

    National Research Council Canada - National Science Library

    Goodwin, Adrian N

    2009-01-01

    A flexible tree taper model based on a cubic polynomial is described. It is algebraically invertible and integrable, and can be constrained by one or two diameters, neither of which need be diameter at breast height (DBH...

  5. Switching Performance Evaluation of Commercial SiC Power Devices (SiC JFET and SiC MOSFET) in Relation to the Gate Driver Complexity

    DEFF Research Database (Denmark)

    Pittini, Riccardo; Zhang, Zhe; Andersen, Michael A. E.

    2013-01-01

    and JFETs. The recent introduction of SiC MOSFET has proved that it is possible to have highly performing SiC devices with a minimum gate driver complexity; this made SiC power devices even more attractive despite their device cost. This paper presents an analysis based on experimental results...... of the switching losses of various commercially available Si and SiC power devices rated at 1200 V (Si IGBTs, SiC JFETs and SiC MOSFETs). The comparison evaluates the reduction of the switching losses which is achievable with the introduction of SiC power devices; this includes analysis and considerations...

  6. Sporadic SICs and the Normed Division Algebras

    Science.gov (United States)

    Stacey, Blake C.

    2017-08-01

    Symmetric informationally complete quantum measurements, or SICs, are mathematically intriguing structures, which in practice have turned out to exhibit even more symmetry than their definition requires. Recently, Zhu classified all the SICs whose symmetry groups act doubly transitively. I show that lattices of integers in the complex numbers, the quaternions and the octonions yield the key parts of these symmetry groups.

  7. SiC nanowires: material and devices

    Science.gov (United States)

    Zekentes, K.; Rogdakis, K.

    2011-04-01

    SiC nanowires are of high interest since they combine the physical properties of SiC with those induced by their low dimensionality. For this reason, a large number of scientific studies have been dedicated to their fabrication and characterization as well as to their application in devices. SiC nanowires' growth involving different growth mechanisms and configurations was the main theme for the large majority of these studies. Various physical characterization methods have been employed for evaluating SiC nanowire quality. SiC nanowires with narrow-diameter (channel material. On the other hand, the grown nanowires are suitable for field-emission applications and to be used as reinforcing material in composite structures as well as for increasing the hydrophobicity of Si surfaces. All these aspects are examined in detail in different sections of this paper.

  8. Thermal expansion and elastic anisotropy in single crystal Al2O3 and SiC reinforcements

    Science.gov (United States)

    Salem, Jonathan A.; Li, Zhuang; Bradt, Richard C.

    1994-01-01

    In single crystal form, SiC and Al2O3 are attractive reinforcing components for high temperature composites. In this study, the axial coefficients of thermal expansion and single crystal elastic constants of SiC and Al2O3 were used to determine their coefficients of thermal expansion and Young's moduli as a function of crystallographic orientation and temperature. SiC and Al2O3 exhibit a strong variation of Young's modulus with orientation; however, their moduli and anisotropies are weak functions of temperature below 1000 C. The coefficients of thermal expansion exhibit significant temperature dependence, and that of the non-cubic Al2O3 is also a function of crystallographic orientation.

  9. Universal Reconfiguration of (Hyper-)cubic Robots

    OpenAIRE

    Abel, Zachary; Kominers, Scott D.

    2008-01-01

    We study a simple reconfigurable robot model which has not been previously examined: cubic robots comprised of three-dimensional cubic modules which can slide across each other and rotate about each others' edges. We demonstrate that the cubic robot model is universal, i.e., that an n-module cubic robot can reconfigure itself into any specified n-module configuration. Additionally, we provide an algorithm that efficiently plans and executes cubic robot motion. Our results directly extend to a...

  10. Lateral boron distribution in polycrystalline SiC source materials

    DEFF Research Database (Denmark)

    Linnarsson, M. K.; Kaiser, M.; Liljedahl, R.

    2013-01-01

    Polycrystalline SiC containing boron and nitrogen are used in growth of fluorescent SiC for white LEDs. Two types of doped polycrystalline SiC have been studied in detail with secondary ion mass spectrometry: sintered SiC and poly-SiC prepared by sublimation in a physical vapor transport setup...

  11. Cubication of Conservative Nonlinear Oscillators

    Science.gov (United States)

    Belendez, Augusto; Alvarez, Mariela L.; Fernandez, Elena; Pascual, Immaculada

    2009-01-01

    A cubication procedure of the nonlinear differential equation for conservative nonlinear oscillators is analysed and discussed. This scheme is based on the Chebyshev series expansion of the restoring force, and this allows us to approximate the original nonlinear differential equation by a Duffing equation in which the coefficients for the linear…

  12. Cryptographic Analysis in Cubic Time

    DEFF Research Database (Denmark)

    Nielson, Flemming; Nielson, Hanne Riis; Seidl, H.

    2004-01-01

    The spi-calculus is a variant of the polyadic pi-calculus that admits symmetric cryptography and that admits expressing communication protocols in a precise though still abstract way. This paper shows that context-independent control flow analysis can be calculated in cubic time despite the fact ...

  13. The diagonalization of cubic matrices

    Science.gov (United States)

    Cocolicchio, D.; Viggiano, M.

    2000-08-01

    This paper is devoted to analysing the problem of the diagonalization of cubic matrices. We extend the familiar algebraic approach which is based on the Cardano formulae. We rewrite the complex roots of the associated resolvent secular equation in terms of transcendental functions and we derive the diagonalizing matrix.

  14. From SICs and MUBs to Eddington

    CERN Document Server

    Bengtsson, Ingemar

    2011-01-01

    This is a survey of some very old knowledge about Mutually Unbiased Bases (MUB) and Symmetric Informationally Complete POVMs (SIC). In prime dimensions the former are closely tied to an elliptic normal curve symmetric under the Heisenberg group, while the latter are believed to be orbits under the Heisenberg group in all dimensions. In dimensions 3 and 4 the SICs are understandable in terms of elliptic curves, but a general statement escapes us. The geometry of the SICs in 3 and 4 dimensions is discussed in some detail.

  15. Effects of SiC amount on phase compositions and properties of Ti3SiC2-based composites

    Institute of Scientific and Technical Information of China (English)

    蔡艳芝; 殷小玮; 尹洪峰

    2015-01-01

    The phase compositions and properties of Ti3SiC2-based composites with SiC addition of 5%−30% in mass fraction fabricated by in-situ reaction and hot pressing sintering were studied. SiC addition effectively prevented TiC synthesis but facilitated SiC synthesis. The Ti3SiC2/TiC−SiC composite had better oxidation resistance when SiC added quantity reached 20% but poorer oxidation resistance with SiC addition under 15%than Ti3SiC2/TiC composite at higher temperatures. There were more than half of the original SiC and a few Ti3SiC2 remaining in Ti3SiC2/TiC−SiC with 20% SiC addition, but all constituents in Ti3Si2/TiC composite were oxidized after 12 h in air at 1500 °C. The oxidation scale thickness of TS30, 1505.78μm, was near a half of that of T, 2715μm, at 1500 °C for 20 h. Ti3SiC2/TiC composite had a flexural strength of 474 MPa, which was surpassed by Ti3SiC2/TiC−SiC composites when SiC added amount reached 15%. The strength reached the peak of 518 MPa at 20%SiC added amount.

  16. Transformation from amorphous to nano-crystalline SiC thin films prepared by HWCVD technique without hydrogen dilution

    Indian Academy of Sciences (India)

    F Shariatmadar Tehrani

    2015-09-01

    Silicon carbide (SiC) thin films were deposited on Si(111) by the hot wire chemical vapour deposition (HWCVD) technique using silane (SiH4) and methane (CH4) gases without hydrogen dilution. The effects of SiH4 to CH4 gas flow ratio (R) on the structural properties, chemical composition and photoluminescence (PL) properties of the films deposited at the different gas flow ratios were investigated and compared. X-ray diffraction (XRD) and Fourier transform infrared (FTIR) spectra revealed a structural transition from amorphous SiC to cubic nano-crystalline SiC films with the increase in the gas flow ratio. Raman scattering confirmed the multi-phased nature of the films. Auger electron spectroscopy showed that the carbon incorporation in the film structure was strongly dependent on the gas flow ratio. A similar broad visible room-temperature PL with two peaks was observed for all SiC films. The main PL emission was correlated to the band to band transition in uniform a-SiC phase and the other lower energy emission was related to the confined a-Si : H clusters in a-SiC matrix. SiC nano-crystallites exhibit no significant contribution to the radiative recombination.

  17. Lat.SIC - roum şi

    Directory of Open Access Journals (Sweden)

    Maria Iliescu

    1991-12-01

    Full Text Available In Jatina populară şi tîrzie ET 'şi' începe să fie întărit prin SIC 'astfel'. Locutiunea ET SIC putea avea sensurile 'şi astfel', 'şi apoi', 'şi imediat', 'şi deasemenea' sau nu mai şi'. Cu timpul s-a pierdut uneori determinantul ET şi SIC singur a inceput să exprime sensurile de mai sus. Astfel se explică etimologia şi accepţiunile rom. şi, conjunctie şi adverb. Se remană de asemenea că evoluţie semantica a lui SIC în română asta pînă la un punct identică cu cea din franceza veche.

  18. Cubication of conservative nonlinear oscillators

    Energy Technology Data Exchange (ETDEWEB)

    Belendez, Augusto; Alvarez, Mariela L [Departamento de Fisica, Ingenieria de Sistemas y Teoria de la Senal, Universidad de Alicante, Apartado 99, E-03080 Alicante (Spain); Fernandez, Elena; Pascual, Inmaculada [Departamento de Optica, FarmacologIa y Anatomia, Universidad de Alicante, Apartado 99, E-03080 Alicante (Spain)], E-mail: a.belendez@ua.es

    2009-09-15

    A cubication procedure of the nonlinear differential equation for conservative nonlinear oscillators is analysed and discussed. This scheme is based on the Chebyshev series expansion of the restoring force, and this allows us to approximate the original nonlinear differential equation by a Duffing equation in which the coefficients for the linear and cubic terms depend on the initial amplitude, A, while in a Taylor expansion of the restoring force these coefficients are independent of A. The replacement of the original nonlinear equation by an approximate Duffing equation allows us to obtain an approximate frequency-amplitude relation as a function of the complete elliptic integral of the first kind. Some conservative nonlinear oscillators are analysed to illustrate the usefulness and effectiveness of this scheme.

  19. Cubic Matrix, Nambu Mechanics and Beyond

    OpenAIRE

    Kawamura, Y

    2002-01-01

    We propose a generalization of cubic matrix mechanics by introducing a canonical triplet and study its relation to Nambu mechanics. The generalized cubic matrix mechanics we consider can be interpreted as a “quantum” generalization of Nambu mechanics.

  20. Cubical sets and the topological topos

    DEFF Research Database (Denmark)

    Spitters, Bas

    2016-01-01

    Coquand's cubical set model for homotopy type theory provides the basis for a computational interpretation of the univalence axiom and some higher inductive types, as implemented in the cubical proof assistant. This paper contributes to the understanding of this model. We make three contributions...... show that it can also be a target for cubical realization by showing that Coquand's cubical sets classify the geometric theory of flat distributive lattices. As a side result, we obtain a simplicial realization of a cubical set. 2. Using the internal `interval' in the topos of cubical sets, we...... construct a Moore path model of identity types. 3. We construct a premodel structure internally in the cubical type theory and hence on the fibrant objects in cubical sets....

  1. Numbers for reducible cubic scrolls

    Directory of Open Access Journals (Sweden)

    Israel Vainsencher

    2004-12-01

    Full Text Available We show how to compute the number of reducible cubic scrolls of codimension 2 in (math blackboard symbol Pn incident to the appropriate number of linear spaces.Mostramos como calcular o número de rolos cúbicos redutíveis de codimensão 2 em (math blackboard symbol Pn incidentes a espaços lineares apropriados.

  2. Cubic colloids : Synthesis, functionalization and applications

    NARCIS (Netherlands)

    Castillo, S.I.R.

    2015-01-01

    This thesis is a study on cubic colloids: micron-sized cubic particles with rounded corners (cubic superballs). Owing to their shape, particle packing for cubes is more efficient than for spheres and results in fascinating phase and packing behavior. For our cubes, the particle volume fraction when

  3. Cubic colloids : Synthesis, functionalization and applications

    NARCIS (Netherlands)

    Castillo, S.I.R.

    2015-01-01

    This thesis is a study on cubic colloids: micron-sized cubic particles with rounded corners (cubic superballs). Owing to their shape, particle packing for cubes is more efficient than for spheres and results in fascinating phase and packing behavior. For our cubes, the particle volume fraction when

  4. Solving Cubic Equations by Polynomial Decomposition

    Science.gov (United States)

    Kulkarni, Raghavendra G.

    2011-01-01

    Several mathematicians struggled to solve cubic equations, and in 1515 Scipione del Ferro reportedly solved the cubic while participating in a local mathematical contest, but did not bother to publish his method. Then it was Cardano (1539) who first published the solution to the general cubic equation in his book "The Great Art, or, The Rules of…

  5. Cubic Icosahedra? A Problem in Assigning Symmetry

    Science.gov (United States)

    Lloyd, D. R.

    2010-01-01

    There is a standard convention that the icosahedral groups are classified separately from the cubic groups, but these two symmetry types have been conflated as "cubic" in some chemistry textbooks. In this note, the connection between cubic and icosahedral symmetries is examined, using a simple pictorial model. It is shown that octahedral and…

  6. Cubic metaplectic forms and theta functions

    CERN Document Server

    Proskurin, Nikolai

    1998-01-01

    The book is an introduction to the theory of cubic metaplectic forms on the 3-dimensional hyperbolic space and the author's research on cubic metaplectic forms on special linear and symplectic groups of rank 2. The topics include: Kubota and Bass-Milnor-Serre homomorphisms, cubic metaplectic Eisenstein series, cubic theta functions, Whittaker functions. A special method is developed and applied to find Fourier coefficients of the Eisenstein series and cubic theta functions. The book is intended for readers, with beginning graduate-level background, interested in further research in the theory of metaplectic forms and in possible applications.

  7. Weighted cubic and biharmonic splines

    Science.gov (United States)

    Kvasov, Boris; Kim, Tae-Wan

    2017-01-01

    In this paper we discuss the design of algorithms for interpolating discrete data by using weighted cubic and biharmonic splines in such a way that the monotonicity and convexity of the data are preserved. We formulate the problem as a differential multipoint boundary value problem and consider its finite-difference approximation. Two algorithms for automatic selection of shape control parameters (weights) are presented. For weighted biharmonic splines the resulting system of linear equations can be efficiently solved by combining Gaussian elimination with successive over-relaxation method or finite-difference schemes in fractional steps. We consider basic computational aspects and illustrate main features of this original approach.

  8. Transparent polycrystalline cubic silicon nitride

    Science.gov (United States)

    Nishiyama, Norimasa; Ishikawa, Ryo; Ohfuji, Hiroaki; Marquardt, Hauke; Kurnosov, Alexander; Taniguchi, Takashi; Kim, Byung-Nam; Yoshida, Hidehiro; Masuno, Atsunobu; Bednarcik, Jozef; Kulik, Eleonora; Ikuhara, Yuichi; Wakai, Fumihiro; Irifune, Tetsuo

    2017-01-01

    Glasses and single crystals have traditionally been used as optical windows. Recently, there has been a high demand for harder and tougher optical windows that are able to endure severe conditions. Transparent polycrystalline ceramics can fulfill this demand because of their superior mechanical properties. It is known that polycrystalline ceramics with a spinel structure in compositions of MgAl2O4 and aluminum oxynitride (γ-AlON) show high optical transparency. Here we report the synthesis of the hardest transparent spinel ceramic, i.e. polycrystalline cubic silicon nitride (c-Si3N4). This material shows an intrinsic optical transparency over a wide range of wavelengths below its band-gap energy (258 nm) and is categorized as one of the third hardest materials next to diamond and cubic boron nitride (cBN). Since the high temperature metastability of c-Si3N4 in air is superior to those of diamond and cBN, the transparent c-Si3N4 ceramic can potentially be used as a window under extremely severe conditions. PMID:28303948

  9. Microwave joining of SiC

    Energy Technology Data Exchange (ETDEWEB)

    Silberglitt, R.; Ahmad, I.; Tian, Y.L. [FM Technologies, Inc., Fairfax, VA (United States)] [and others

    1997-04-01

    The purpose of this work is to optimize the properties of SiC-SiC joints made using microwave energy. The current focus is on identification of the most effective joining methods for scale-up to large tube assemblies, including joining using SiC produced in situ from chemical precursors. During FY 1996, a new microwave applicator was designed, fabricated and tested that provides the capability for vacuum baking of the specimens and insulation and for processing under inert environment. This applicator was used to join continuous fiber-reinforced (CFCC) SiC/SiC composites using a polymer precursor to form a SiC interlayer in situ.

  10. Tame Kernels of Pure Cubic Fields

    Institute of Scientific and Technical Information of China (English)

    Xiao Yun CHENG

    2012-01-01

    In this paper,we study the p-rank of the tame kernels of pure cubic fields.In particular,we prove that for a fixed positive integer m,there exist infinitely many pure cubic fields whose 3-rank of the tame kernel equal to m.As an application,we determine the 3-rank of their tame kernels for some special pure cubic fields.

  11. Two-dimensional cubic convolution.

    Science.gov (United States)

    Reichenbach, Stephen E; Geng, Frank

    2003-01-01

    The paper develops two-dimensional (2D), nonseparable, piecewise cubic convolution (PCC) for image interpolation. Traditionally, PCC has been implemented based on a one-dimensional (1D) derivation with a separable generalization to two dimensions. However, typical scenes and imaging systems are not separable, so the traditional approach is suboptimal. We develop a closed-form derivation for a two-parameter, 2D PCC kernel with support [-2,2] x [-2,2] that is constrained for continuity, smoothness, symmetry, and flat-field response. Our analyses, using several image models, including Markov random fields, demonstrate that the 2D PCC yields small improvements in interpolation fidelity over the traditional, separable approach. The constraints on the derivation can be relaxed to provide greater flexibility and performance.

  12. A Study on Fretting Wear Property of CVD SiC and Sintered SiC

    Energy Technology Data Exchange (ETDEWEB)

    Cha, Hyun-Jin; Jang, Ki-Nam; An, Ji-Hyeong; Kim, Kyu-Tae [Dongguk University, Gyeongju (Korea, Republic of)

    2015-10-15

    Silicon Carbide is broadly used as high temperature structure material because of its high temperature tolerance and superior mechanical properties. After the Fukushima nuclear power plant accident, SiC proposed as one of the alternative materials for LWR fuel cladding to provide enhanced safety margin. Grid-to-rod fretting wear-induced fuel failure is known to occur due to flow-induced vibration of the reactor core and grid to- rod gap. In this paper, wear tests for CVD SiC plate and sintered SiC tube were performed with two types of spacer grids. Wear test of corroded and non-corroded CVD SiC plates indicate that wear resistance of corroded specimen is lower than one of non-corroded specimen in contrast with zirconium alloy cladding tube. It may be affected by rough surface of corroded specimen caused by grain boundary attack.

  13. 29 CFR 510.21 - SIC codes.

    Science.gov (United States)

    2010-07-01

    ... 29 Labor 3 2010-07-01 2010-07-01 false SIC codes. 510.21 Section 510.21 Labor Regulations Relating to Labor (Continued) WAGE AND HOUR DIVISION, DEPARTMENT OF LABOR REGULATIONS IMPLEMENTATION OF THE MINIMUM WAGE PROVISIONS OF THE 1989 AMENDMENTS TO THE FAIR LABOR STANDARDS ACT IN PUERTO RICO...

  14. Microwave joining of SiC

    Energy Technology Data Exchange (ETDEWEB)

    Silberglitt, R.; Ahmad, I. [FM Technologies, Inc., Fairfax, VA (United States); Black, W.M. [George Mason Univ., Fairfax, VA (United States)] [and others

    1995-05-01

    The purpose of this work is to optimize the properties of SiC-SiC joints made using microwave energy. The current focus is on optimization of time-temperature profiles, production of SiC from chemical precursors, and design of new applicators for joining of long tubes.

  15. Universal Converter Using SiC

    Energy Technology Data Exchange (ETDEWEB)

    Dallas Marckx; Brian Ratliff; Amit Jain; Matthew Jones

    2007-01-01

    The grantee designed a high power (over 1MW) inverter for use in renewable and distributed energy systems, such as PV cells, fuel cells, variable speed wind turbines, micro turbines, variable speed gensets and various energy storage methods. The inverter uses 10,000V SiC power devices which enable the use of a straight-forward topology for medium voltage (4,160VAC) without the need to cascade devices or topologies as is done in all commercial, 4,160VAC inverters today. The use of medium voltage reduces the current by nearly an order of magnitude in all current carrying components of the energy system, thus reducing size and cost. The use of SiC not only enables medium voltage, but also the use of higher temperatures and switching frequencies, further reducing size and cost. In this project, the grantee addressed several technical issues that stand in the way of success. The two primary issues addressed are the determination of real heat losses in candidate SiC devices at elevated temperature and the development of high temperature packaging for SiC devices.

  16. Passive SiC irradiation temperature monitor

    Energy Technology Data Exchange (ETDEWEB)

    Youngblood, G.E.

    1996-04-01

    A new, improved passive irradiation temperature monitoring method was examined after an irradiation test at 627{degrees}C. The method is based on the analysis of thermal diffusivity changes during postirradiation annealing of polycrystalline SiC. Based on results from this test, several advantages for using this new method rather than a method based on length or lattice parameter changes are given.

  17. EFFECT OF SiC PARTICLE SIZE ON THE MATERIAL AND MECHANICAL PROPERTIES OF MULLITE BONDED SiC CERAMICS PROCESSED BY INFILTRATION TECHNIQUE

    National Research Council Canada - National Science Library

    Sanchita Baitalik; Nijhuma Kayal; Dey Atanu; Chakrabarti Omprakash

    2014-01-01

    The influence of SiC particles size on the bonding phase content, microstructure, SiC oxidation degree, flexural strength, porosity and pore size distribution of mullitebonded porous SiC ceramics were...

  18. Cubical local partial orders on cubically subdivided spaces - Existence and construction

    DEFF Research Database (Denmark)

    Fajstrup, Lisbeth

    2006-01-01

    The geometric models of higher dimensional automata (HDA) and Dijkstra's PV-model are cubically subdivided topological spaces with a local partial order. If a cubicalization of a topological space is free of immersed cubic Möbius bands, then there are consistent choices of direction in all cubes...

  19. Cubical local partial orders on cubically subdivided spaces - existence and construction

    DEFF Research Database (Denmark)

    Fajstrup, Lisbeth

    The geometric models of Higher Dimensional Automata and Dijkstra's PV-model are cubically subdivided topological spaces with a local partial order. If a cubicalization of a topological space is free of immersed cubic Möbius bands, then there are consistent choices of direction in all cubes...

  20. CLASSIFICATION OF CUBIC PARAMETERIZED HOMOGENEOUS VECTOR FIELDS

    Institute of Scientific and Technical Information of China (English)

    Karnal H.Yasir; TANG Yun

    2002-01-01

    In this paper the cubic homogeneous parameterized vector fields are studied.The classification of the phase portrait near the critical point is presented. This classification is an extension of the result given by Takens to the cubic homogeneous parameterized vector fields with six parameters.

  1. CLASSIFICATION OF CUBIC PARAMETERIZED HOMOGENEOUS VECTOR FIELDS

    Institute of Scientific and Technical Information of China (English)

    KamalH.Yasir; TNAGYun

    2002-01-01

    In this paper the cubic homogeneous parameterized vector fields are studied.The classification of the phase portrait near the critical point is presented.This classification is an extension of the result given by takens to the cubic homogeneous parameterized vector fields with six parameters.

  2. Synthesis of High Purity SiC Powder for High-resistivity SiC Single Crystals Growth

    Institute of Scientific and Technical Information of China (English)

    Li WANG; Xiaobu HU; Xiangang XU; Shouzheng JIANG; Lina NING; Minhua JIANG

    2007-01-01

    High purity silicon carbide (SiC) powder was synthesized in-situ by chemical reaction between silicon and carbon powder. In order to ensure that the impurity concentration of the resulting SiC powder is suitable for high-resistivity SiC single crystal growth, the preparation technology of SiC powder is different from that of SiC ceramic. The influence of the shape and size of carbon particles on the morphology and phase composition of the obtained SiC powder were discussed. The phase composition and morphology of the products were investigated by X-ray diffraction, Raman microspectroscopy and scanning electron microscopy. The results show that the composition of resulting SiC by in-situ synthesis from Si/C mixture strongly depends on the nature of the carbon source, which corresponds to the particle size and shape, as well as the preparation temperature. In the experimental conditions, flake graphite is more suitable for the synthesis of SiC powder than activated carbon because of its relatively smaller particle size and flake shape, which make the conversion more complete. The major phase composition of the full conversion products is β-SiC, with traces of α-SiC.Glow discharge mass spectroscopy measurements indicated that SiC powder synthesized with this chemical reaction method can meet the purity demand for the growth of high-resistivity SiC single crystals.

  3. Ultrahard nanotwinned cubic boron nitride.

    Science.gov (United States)

    Tian, Yongjun; Xu, Bo; Yu, Dongli; Ma, Yanming; Wang, Yanbin; Jiang, Yingbing; Hu, Wentao; Tang, Chengchun; Gao, Yufei; Luo, Kun; Zhao, Zhisheng; Wang, Li-Min; Wen, Bin; He, Julong; Liu, Zhongyuan

    2013-01-17

    Cubic boron nitride (cBN) is a well known superhard material that has a wide range of industrial applications. Nanostructuring of cBN is an effective way to improve its hardness by virtue of the Hall-Petch effect--the tendency for hardness to increase with decreasing grain size. Polycrystalline cBN materials are often synthesized by using the martensitic transformation of a graphite-like BN precursor, in which high pressures and temperatures lead to puckering of the BN layers. Such approaches have led to synthetic polycrystalline cBN having grain sizes as small as ∼14 nm (refs 1, 2, 4, 5). Here we report the formation of cBN with a nanostructure dominated by fine twin domains of average thickness ∼3.8 nm. This nanotwinned cBN was synthesized from specially prepared BN precursor nanoparticles possessing onion-like nested structures with intrinsically puckered BN layers and numerous stacking faults. The resulting nanotwinned cBN bulk samples are optically transparent with a striking combination of physical properties: an extremely high Vickers hardness (exceeding 100 GPa, the optimal hardness of synthetic diamond), a high oxidization temperature (∼1,294 °C) and a large fracture toughness (>12 MPa m(1/2), well beyond the toughness of commercial cemented tungsten carbide, ∼10 MPa m(1/2)). We show that hardening of cBN is continuous with decreasing twin thickness down to the smallest sizes investigated, contrasting with the expected reverse Hall-Petch effect below a critical grain size or the twin thickness of ∼10-15 nm found in metals and alloys.

  4. Cubic III-nitrides: potential photonic materials

    Science.gov (United States)

    Onabe, K.; Sanorpim, S.; Kato, H.; Kakuda, M.; Nakamura, T.; Nakamura, K.; Kuboya, S.; Katayama, R.

    2011-01-01

    The growth and characterization of some cubic III-nitride films on suitable cubic substrates have been done, namely, c- GaN on GaAs by MOVPE, c-GaN and c-AlGaN on MgO by RF-MBE, and c-InN and c-InGaN (In-rich) on YSZ by RFMBE. This series of study has been much focused on the cubic-phase purity as dependent on the respective growth conditions and resulting electrical and optical properties. For c-GaN and c-InN films, a cubic-phase purity higher than 95% is attained in spite of the metastable nature of the cubic III-nitrides. However, for c-AlGaN and c-InGaN films, the cubic-phase purity is rapidly degraded with significant incorporation of the hexagonal phase through stacking faults on cubic {111} faces which may be exposed on the roughened growing or substrate surface. It has been shown that the electron mobilities in c-GaN and c-AlGaN films are much related to phase purity.

  5. Point Defects in SiC

    Science.gov (United States)

    Zvanut, Mary Ellen

    2004-03-01

    Production of high frequency, high power electronic devices using wide bandgap semiconductors has spurred renewed interest in point defects in SiC. Recent electron paramagnetic resonance (EPR) spectroscopy studies focus on centers in as-grown high purity semi-insulating substrates because intrinsic defects are thought to compensate unavoidable shallow centers, thus creating the high resistivity required. The EPR studies address the chemical/structural composition of the defects, the defect level (energy with respect to a band edge with which the defect can accept or release an electron) and thermal stability. Thus far, the positively charged carbon vacancy, the Si vacancy, a carbon-vacancy/carbon antisite pair, and several as yet-unidentified centers have been observed in as-grown electronic-grade 4H-SiC [1-3]. The talk will review the types of defects recently identified in SiC and discuss their possible relationship to compensation. The photo-induced EPR experiments used to determine defect levels will be discussed, with a particular focus on the carbon vacancy. The use of high frequency EPR to resolve the many different types of centers in SiC will also be covered. Finally, the presentation will review the thermal stability of the intrinsic defects detected in as-grown 4H SiC. 1. M. E. Zvanut and V. V. Konovalov, Appl. Phys. Lett. 80, 410 (2002). 2. N.T. Son, Z. Zolnai, and E. Janzen, Phys. Rev. B64, 2452xx (2003). 3. W.E. Carlos, E.R. Glaser, and B.V. Shanabrook, in Proceedings of the 22nd conference on Defects in Semiconductors, Aarhus, Denmark, July 2003.

  6. SiC Schottky diode electrothermal macromodel

    OpenAIRE

    Masana Nadal, Francisco

    2010-01-01

    This paper presents a SiC Schottky diode model including static, dynamic and thermal features implemented as separate parameterized blocks constructed from SPICE Analog Behavioral Modeling (ABM) controlled sources. The parameters for each block are easy to extract, even from readily available diode data sheet information. The model complexity is low thus allowing reasonably long simulation times to cope with the rather slow self heating process and yet accurate enough for practical purposes.

  7. Cubic Curves, Finite Geometry and Cryptography

    CERN Document Server

    Bruen, A A; Wehlau, D L

    2011-01-01

    Some geometry on non-singular cubic curves, mainly over finite fields, is surveyed. Such a curve has 9,3,1 or 0 points of inflexion, and cubic curves are classified accordingly. The group structure and the possible numbers of rational points are also surveyed. A possible strengthening of the security of elliptic curve cryptography is proposed using a `shared secret' related to the group law. Cubic curves are also used in a new way to construct sets of points having various combinatorial and geometric properties that are of particular interest in finite Desarguesian planes.

  8. Generalized Vaidya spacetime for cubic gravity

    CERN Document Server

    Ruan, Shan-Ming

    2015-01-01

    We present a kind of generalized Vaidya solutions of a new cubic gravity in five dimensions whose field equations in spherically spacetime are always second order like the Lovelock gravity. We also study the thermodynamics of its apparent horizon and get its entropy expression and generalized Misner-Sharp energy. Finally we present the first law and second law hold in this gravity. Although all the results are analogue to those in Lovelock gravity, we in fact introduce the contribution of new cubic term in five dimensions where cubic Lovelock term is just zero.

  9. Cubical sets as a classifying topos

    DEFF Research Database (Denmark)

    Spitters, Bas

    Coquand’s cubical set model for homotopy type theory provides the basis for a computational interpretation of the univalence axiom and some higher inductive types, as implemented in the cubical proof assistant. We show that the underlying cube category is the opposite of the Lawvere theory of De...... Morgan algebras. The topos of cubical sets itself classifies the theory of ‘free De Morgan algebras’. This provides us with a topos with an internal ‘interval’. Using this interval we construct a model of type theory following van den Berg and Garner. We are currently investigating the precise relation...

  10. Investigation on the Luminescent Properties of SiC

    Institute of Scientific and Technical Information of China (English)

    WANG Qiang; LI Yu-guo; SHI Li-wei; SHUN Hai-bo; XUE Cheng-shan

    2003-01-01

    Silicon carbide (SiC) is an excellent microelectronic material used to fabricate high frequency, high temperature,high power and non-volatile memory devices.But due to its indirect band gap,SiC based LED can't emit light so efficiently as GaN based LED, so people are eager to seek effective means to improve its luminescence efficiency. Amorphous SiC, porous crystalline SiC, nanometer SiC produced by CVD methods and porous SiC formed by ion implantation are investigated, and great progresses have been gained during the latest few years,which make SiC a promising material for developing OEIC.

  11. SiC Power MOSFET with Improved Gate Dielectric

    Energy Technology Data Exchange (ETDEWEB)

    Sbrockey, Nick M; Tompa, Gary S; Spencer, Michael G; Chandrashekhar, Chandra MVS

    2010-08-23

    In this STTR program, Structured Materials Industries (SMI), and Cornell University are developing novel gate oxide technology, as a critical enabler for silicon carbide (SiC) devices. SiC is a wide bandgap semiconductor material, with many unique properties. SiC devices are ideally suited for high-power, highvoltage, high-frequency, high-temperature and radiation resistant applications. The DOE has expressed interest in developing SiC devices for use in extreme environments, in high energy physics applications and in power generation. The development of transistors based on the Metal Oxide Semiconductor Field Effect Transistor (MOSFET) structure will be critical to these applications.

  12. MOVING SCREW DISLOCATION IN CUBIC QUASICRYSTAL

    Institute of Scientific and Technical Information of China (English)

    ZHOU Wang-min; SONG Yu-hai

    2005-01-01

    The elasticity theory of the dislocation of cubic quasicrystals is developed.The governing equations of anti-plane elasticity dynamics problem of the quasicrystals were reduced to a solution of wave equations by introducing displacement functions,and the analytical expressions of displacements, stresses and energies induced by a moving screw dislocation in the cubic quasicrystalline and the velocity limit of the dislocation were obtained. These provide important information for studying the plastic deformation of the new solid material.

  13. 2-rational Cubic Spline Involving Tension Parameters

    Indian Academy of Sciences (India)

    M Shrivastava; J Joseph

    2000-08-01

    In the present paper, 1-piecewise rational cubic spline function involving tension parameters is considered which produces a monotonic interpolant to a given monotonic data set. It is observed that under certain conditions the interpolant preserves the convexity property of the data set. The existence and uniqueness of a 2-rational cubic spline interpolant are established. The error analysis of the spline interpolant is also given.

  14. Semisymmetric Cubic Graphs of Order 162

    Indian Academy of Sciences (India)

    Mehdi Alaeiyan; Hamid A Tavallaee; B N Onagh

    2010-02-01

    An undirected graph without isolated vertices is said to be semisymmetric if its full automorphism group acts transitively on its edge set but not on its vertex set. In this paper, we inquire the existence of connected semisymmetric cubic graphs of order 162. It is shown that for every odd prime , there exists a semisymmetric cubic graph of order 162 and its structure is explicitly specified by giving the corresponding voltage rules generating the covering projections.

  15. Cubical version of combinatorial differential forms

    DEFF Research Database (Denmark)

    Kock, Anders

    2010-01-01

    The theory of combinatorial differential forms is usually presented in simplicial terms. We present here a cubical version; it depends on the possibility of forming affine combinations of mutual neighbour points in a manifold, in the context of synthetic differential geometry.......The theory of combinatorial differential forms is usually presented in simplicial terms. We present here a cubical version; it depends on the possibility of forming affine combinations of mutual neighbour points in a manifold, in the context of synthetic differential geometry....

  16. 500?C SiC JFET Driver Circuits and Packaging Project

    Data.gov (United States)

    National Aeronautics and Space Administration — In the proposed development, SiC JFET control circuitry and normally-off SiC JFET power switch will be integrated in a single SiC chip that will provide digital...

  17. Nanocrystalline SiC and Ti3SiC2 Alloys for Reactor Materials: Diffusion of Fission Product Surrogates

    Energy Technology Data Exchange (ETDEWEB)

    Henager, Charles H.; Jiang, Weilin

    2014-11-01

    MAX phases, such as titanium silicon carbide (Ti3SiC2), have a unique combination of both metallic and ceramic properties, which make them attractive for potential nuclear applications. Ti3SiC2 has been suggested in the literature as a possible fuel cladding material. Prior to the application, it is necessary to investigate diffusivities of fission products in the ternary compound at elevated temperatures. This study attempts to obtain relevant data and make an initial assessment for Ti3SiC2. Ion implantation was used to introduce fission product surrogates (Ag and Cs) and a noble metal (Au) in Ti3SiC2, SiC, and a dual-phase nanocomposite of Ti3SiC2/SiC synthesized at PNNL. Thermal annealing and in-situ Rutherford backscattering spectrometry (RBS) were employed to study the diffusivity of the various implanted species in the materials. In-situ RBS study of Ti3SiC2 implanted with Au ions at various temperatures was also performed. The experimental results indicate that the implanted Ag in SiC is immobile up to the highest temperature (1273 K) applied in this study; in contrast, significant out-diffusion of both Ag and Au in MAX phase Ti3SiC2 occurs during ion implantation at 873 K. Cs in Ti3SiC2 is found to diffuse during post-irradiation annealing at 973 K, and noticeable Cs release from the sample is observed. This study may suggest caution in using Ti3SiC2 as a fuel cladding material for advanced nuclear reactors operating at very high temperatures. Further studies of the related materials are recommended.

  18. Cs diffusion in SiC high-energy grain boundaries

    Science.gov (United States)

    Ko, Hyunseok; Szlufarska, Izabela; Morgan, Dane

    2017-09-01

    Cesium (Cs) is a radioactive fission product whose release is of concern for Tristructural-Isotropic fuel particles. In this work, Cs diffusion through high energy grain boundaries (HEGBs) of cubic-SiC is studied using an ab-initio based kinetic Monte Carlo (kMC) model. The HEGB environment was modeled as an amorphous SiC, and Cs defect energies were calculated using the density functional theory (DFT). From defect energies, it was suggested that the fastest diffusion mechanism is the diffusion of Cs interstitial in an amorphous SiC. The diffusion of Cs interstitial was simulated using a kMC model, based on the site and transition state energies sampled from the DFT. The Cs HEGB diffusion exhibited an Arrhenius type diffusion in the range of 1200-1600 °C. The comparison between HEGB results and the other studies suggests not only that the GB diffusion dominates the bulk diffusion but also that the HEGB is one of the fastest grain boundary paths for the Cs diffusion. The diffusion coefficients in HEGB are clearly a few orders of magnitude lower than the reported diffusion coefficients from in- and out-of-pile samples, suggesting that other contributions are responsible, such as radiation enhanced diffusion.

  19. Advances in wide bandgap SiC for optoelectronics

    DEFF Research Database (Denmark)

    Ou, Haiyan; Ou, Yiyu; Argyraki, Aikaterini

    2014-01-01

    Silicon carbide (SiC) has played a key role in power electronics thanks to its unique physical properties like wide bandgap, high breakdown field, etc. During the past decade, SiC is also becoming more and more active in optoelectronics thanks to the progress in materials growth and nanofabrication...

  20. Challenges in Switching SiC MOSFET without Ringing

    DEFF Research Database (Denmark)

    Li, Helong; Munk-Nielsen, Stig

    2014-01-01

    Switching SiC MOSFET without ringing in high frequency applications is important for meeting the EMI (ElectroMagnetic Interference) standard. Achieving a clean switching waveform of SiC MOSFET without additional components is becoming a challenge. In this paper, the switching oscillation mechanis...

  1. Interpolation by two-dimensional cubic convolution

    Science.gov (United States)

    Shi, Jiazheng; Reichenbach, Stephen E.

    2003-08-01

    This paper presents results of image interpolation with an improved method for two-dimensional cubic convolution. Convolution with a piecewise cubic is one of the most popular methods for image reconstruction, but the traditional approach uses a separable two-dimensional convolution kernel that is based on a one-dimensional derivation. The traditional, separable method is sub-optimal for the usual case of non-separable images. The improved method in this paper implements the most general non-separable, two-dimensional, piecewise-cubic interpolator with constraints for symmetry, continuity, and smoothness. The improved method of two-dimensional cubic convolution has three parameters that can be tuned to yield maximal fidelity for specific scene ensembles characterized by autocorrelation or power-spectrum. This paper illustrates examples for several scene models (a circular disk of parametric size, a square pulse with parametric rotation, and a Markov random field with parametric spatial detail) and actual images -- presenting the optimal parameters and the resulting fidelity for each model. In these examples, improved two-dimensional cubic convolution is superior to several other popular small-kernel interpolation methods.

  2. Single-crystal cubic silicon carbide: an in vivo biocompatible semiconductor for brain machine interface devices.

    Science.gov (United States)

    Frewin, Christopher L; Locke, Christopher; Saddow, Stephen E; Weeber, Edwin J

    2011-01-01

    Single crystal silicon carbide (SiC) is a wide band-gap semiconductor which has shown both bio- and hemo-compatibility [1-5]. Although single crystalline SiC has appealing bio-sensing potential, the material has not been extensively characterized. Cubic silicon carbide (3C-SiC) has superior in vitro biocompatibility compared to its hexagonal counterparts [3, 5]. Brain machine interface (BMI) systems using implantable neuronal prosthetics offer the possibility of bi-directional signaling, which allow sensory feedback and closed loop control. Existing implantable neural interfaces have limited long-term reliability, and 3C-SiC may be a material that may improve that reliability. In the present study, we investigated in vivo 3C-SiC biocompatibility in the CNS of C56BL/6 mice. 3C-SiC was compared against the known immunoreactive response of silicon (Si) at 5, 10, and 35 days. The material was examined to detect CD45, a protein tyrosine phosphatase (PTP) expressed by activated microglia and macrophages. The 3C-SiC surface revealed limited immunoresponse and significantly reduced microglia compared to Si substrate.

  3. Prospects for SiC electronics and sensors

    Directory of Open Access Journals (Sweden)

    Nick G. Wright

    2008-01-01

    Full Text Available There has been substantial international research effort in the development of SiC electronics over the last ten years. With promising applications in power electronics, hostile-environment electronics, and sensors, there is considerable industrial interest in SiC as a material for electronics. However, issues relating to crystal growth and the difficulties of material processing have restricted SiC devices to relatively limited use to date. The eventual success of SiC as an electronic technology will depend on the close interplay of research in fundamental material science with progress in design of electronic devices and packaging. We review the current status of SiC electronics from a materials perspective – highlighting current difficulties and future opportunities for progress.

  4. Epitaxial sic devices for radiation dosimetry

    Energy Technology Data Exchange (ETDEWEB)

    Bruzzi, M; Menichelli, D.; Pini, S.; Sciortino, S. [INFN, Firenze (Italy); Firenze Univ., Firenze (Italy). Dipartimento di Energetica; Bucciolini, M. [INFN, Firenze (Italy); Firenze Univ., Firenze (Italy). Dipartimento di Fisiopatologia Clinica; Nava, F. [Modena Univ., Modena (Italy). Dipartimento di Fisica; INFN, Bologna (Italy)

    2002-07-01

    The current response of SiC on-line dosimeters to {gamma}-radiation from{sup 60}Co and {sup 167}Cs {gamma}-sources, X-photons and 22MeV electrons from linear accelerator has been investigated. The devices used are 4H-SiC epitaxial n-type layer deposited onto a 4H-SiC n{sup +} type substrate wafer doped with nitrogen. Single-pad Schottky contacts have been produced by deposition of a 1000A gold film on the epitaxial layer and ohmic contacts have been deposited on the rear substrate side. The detector has been then embedded in epoxy resin and studied in the dose and dose-rate ranges 0.1-1 Gy 0.1-10Gy/min. A signal response comparable to that of silicon standard dosimeters has been measured with the unbiased SiC device. The released charge and induced current have been observed to increase linearly respectively with the dose and dose-rate. A preliminary study on the changes in the sensibility of the device after a {gamma}-rays accumulated dose up to 10kGy is also presented.

  5. Superhard BC(3) in cubic diamond structure.

    Science.gov (United States)

    Zhang, Miao; Liu, Hanyu; Li, Quan; Gao, Bo; Wang, Yanchao; Li, Hongdong; Chen, Changfeng; Ma, Yanming

    2015-01-01

    We solve the crystal structure of recently synthesized cubic BC(3) using an unbiased swarm structure search, which identifies a highly symmetric BC(3) phase in the cubic diamond structure (d-BC(3)) that contains a distinct B-B bonding network along the body diagonals of a large 64-atom unit cell. Simulated x-ray diffraction and Raman peaks of d-BC(3) are in excellent agreement with experimental data. Calculated stress-strain relations of d-BC(3) demonstrate its intrinsic superhard nature and reveal intriguing sequential bond-breaking modes that produce superior ductility and extended elasticity, which are unique among superhard solids. The present results establish the first boron carbide in the cubic diamond structure with remarkable properties, and these new findings also provide insights for exploring other covalent solids with complex bonding configurations.

  6. Cubical Cohomology Ring of 3D Photographs

    CERN Document Server

    Gonzalez-Diaz, Rocio; Medrano, Belen; 10.1002/ima.20271

    2011-01-01

    Cohomology and cohomology ring of three-dimensional (3D) objects are topological invariants that characterize holes and their relations. Cohomology ring has been traditionally computed on simplicial complexes. Nevertheless, cubical complexes deal directly with the voxels in 3D images, no additional triangulation is necessary, facilitating efficient algorithms for the computation of topological invariants in the image context. In this paper, we present formulas to directly compute the cohomology ring of 3D cubical complexes without making use of any additional triangulation. Starting from a cubical complex $Q$ that represents a 3D binary-valued digital picture whose foreground has one connected component, we compute first the cohomological information on the boundary of the object, $\\partial Q$ by an incremental technique; then, using a face reduction algorithm, we compute it on the whole object; finally, applying the mentioned formulas, the cohomology ring is computed from such information.

  7. Purely cubic action for string field theory

    Science.gov (United States)

    Horowitz, G. T.; Lykken, J.; Rohm, R.; Strominger, A.

    1986-01-01

    It is shown that Witten's (1986) open-bosonic-string field-theory action and a closed-string analog can be written as a purely cubic interaction term. The conventional form of the action arises by expansion around particular solutions of the classical equations of motion. The explicit background dependence of the conventional action via the Becchi-Rouet-Stora-Tyutin operator is eliminated in the cubic formulation. A closed-form expression is found for the full nonlinear gauge-transformation law.

  8. Purely cubic action for string field theory

    Science.gov (United States)

    Horowitz, G. T.; Lykken, J.; Rohm, R.; Strominger, A.

    1986-01-01

    It is shown that Witten's (1986) open-bosonic-string field-theory action and a closed-string analog can be written as a purely cubic interaction term. The conventional form of the action arises by expansion around particular solutions of the classical equations of motion. The explicit background dependence of the conventional action via the Becchi-Rouet-Stora-Tyutin operator is eliminated in the cubic formulation. A closed-form expression is found for the full nonlinear gauge-transformation law.

  9. Active Oxidation of SiC

    Science.gov (United States)

    Jacobson, Nathan S.; Myers,Dwight L.; Harder, Bryan J.

    2011-01-01

    The high temperature oxidation of silicon carbide occurs in either a passive or active mode, depending on temperature and oxygen potential. Passive oxidation forms a protective oxide film which limits attack of the SiC:SiC(s) + 3/2 O2(g) = SiO2(s) + CO(g.) Active oxidation forms a volatile oxide and leads to extensive attack of the SiC: SiC(s) + O2(g) = SiO(g) + CO(g). The transition points and rates of active oxidation are a major issue. Previous studies are reviewed and the leading theories of passive/active transitions summarized. Comparisons are made to the active/passive transitions in pure Si, which are relatively well-understood. Critical questions remain about the difference between the active-to-passive transition and passive-to-active transition. For Si, Wagner [2] points out that the active-to-passive transition is governed by the criterion for a stable Si/SiO2 equilibria and the passive-to-active transition is governed by the decomposition of the SiO2 film. This suggests a significant oxygen potential difference between these two transitions and our experiments confirm this. For Si, the initial stages of active oxidation are characterized by the formation of SiO(g) and further oxidation to SiO2(s) as micron-sized rods, with a distinctive morphology. SiC shows significant differences. The active-to-passive and the passive-to-active transitions are close. The SiO2 rods only appear as the passive film breaks down. These differences are explained in terms of the reactions at the SiC/SiO2 interface. In order to understand the breakdown of the passive film, pre-oxidation experiments are conducted. These involve forming dense protective scales of 0.5, 1, and 2 microns and then subjecting the samples with these scales to a known active oxidation environment. Microstructural studies show that SiC/SiO2 interfacial reactions lead to a breakdown of the scale with a distinct morphology.

  10. Irradiation damage of SiC semiconductor device (I)

    Energy Technology Data Exchange (ETDEWEB)

    Park, Ji Yeon; Kim, Weon Ju

    2000-09-01

    This report reviewed the irradiation damage of SiC semiconductor devices and examined a irradiation behavior of SiC single crystal as a pre-examination for evaluation of irradiation behavior of SiC semiconductor devices. The SiC single was crystal irradiated by gamma-beam, N+ ion and electron beam. Annealing examinations of the irradiated specimens also were performed at 500 deg C. N-type 6H-SiC dopped with N+ ion was used and irradiation doses of gamma-beam, N+ion and electron beam were up to 200 Mrad, 1x10{sup 16} N{sup +} ions/cm{sup 2} and 3.6 x 10{sup 17} e/cm{sup 2} and 1.08 x 10{sup 18} e/cm{sup 2} , respectively. Irradiation damages were analyzed by the EPR method. Additionally, properties of SiC, information about commercial SiC single crystals and the list of web sites with related to the SiC device were described in the appendix.

  11. DEFICIENT CUBIC SPLINES WITH AVERAGE SLOPE MATCHING

    Institute of Scientific and Technical Information of China (English)

    V. B. Das; A. Kumar

    2005-01-01

    We obtain a deficient cubic spline function which matches the functions with certain area matching over a greater mesh intervals, and also provides a greater flexibility in replacing area matching as interpolation. We also study their convergence properties to the interpolating functions.

  12. Counting rational points on cubic curves

    Institute of Scientific and Technical Information of China (English)

    HEATH-BROWN; Roger; TESTA; Damiano

    2010-01-01

    We prove upper bounds for the number of rational points on non-singular cubic curves defined over the rationals.The bounds are uniform in the curve and involve the rank of the corresponding Jacobian.The method used in the proof is a combination of the "determinant method" with an m-descent on the curve.

  13. CONSTRAINED RATIONAL CUBIC SPLINE AND ITS APPLICATION

    Institute of Scientific and Technical Information of China (English)

    Qi Duan; Huan-ling Zhang; Xiang Lai; Nan Xie; Fu-hua (Frank) Cheng

    2001-01-01

    In this paper, a kind of rational cubic interpolation functionwith linear denominator is constructed. The constrained interpolation with constraint on shape of the interpolating curves and on the second-order derivative of the interpolating function is studied by using this interpolation, and as the consequent result, the convex interpolation conditions have been derived.

  14. Anisotropy of a cubic ferromagnet at criticality

    Science.gov (United States)

    Kudlis, A.; Sokolov, A. I.

    2016-10-01

    Critical fluctuations change the effective anisotropy of cubic ferromagnet near the Curie point. If the crystal undergoes phase transition into orthorhombic phase and the initial anisotropy is not too strong, reduced anisotropy of nonlinear susceptibility acquires at Tc the universal value δ4*=2/v* 3 (u*+v*) where u* and v* are coordinates of the cubic fixed point on the flow diagram of renormalization group equations. In the paper, the critical value of the reduced anisotropy is estimated within the pseudo-ɛ expansion approach. The six-loop pseudo-ɛ expansions for u*, v*, and δ4* are derived for the arbitrary spin dimensionality n . For cubic crystals (n =3 ) higher-order coefficients of the pseudo-ɛ expansions obtained turn out to be so small that use of simple Padé approximants yields reliable numerical results. Padé resummation of the pseudo-ɛ series for u*, v*, and δ4* leads to the estimate δ4*=0.079 ±0.006 , indicating that detection of the anisotropic critical behavior of cubic ferromagnets in physical and computer experiments is certainly possible.

  15. Binomial Squares in Pure Cubic Number Fields

    CERN Document Server

    Lemmermeyer, Franz

    2011-01-01

    Let K = Q(\\omega) with \\omega^3 = m be a pure cubic number field. We show that the elements\\alpha \\in K^\\times whose squares have the form a - \\omega form a group isomorphic to the group of rational points on the elliptic curve E_m: y^2= x^3 - m.

  16. The cactus rank of cubic forms

    CERN Document Server

    Bernardi, Alessandra

    2011-01-01

    We prove that the smallest degree of an apolar 0-dimensional scheme to a general cubic form in $n+1$ variables is at most $2n+2$, when $n\\geq 8$, and therefore smaller than the rank of the form. When n=8 we show that the bound is sharp, i.e. the smallest degree of an apolar subscheme is 18.

  17. Compatibility of SiC and SiC Composites with Molten Lead

    Energy Technology Data Exchange (ETDEWEB)

    H Tunison

    2006-03-07

    The choice of structural material candidates to contain Lead at 1000 C are limited in number. Silicon carbide composites comprise one choice of possible containment materials. Short term screening studies (120 hours) were undertaken to study the behavior of Silicon Carbide, Silicon Nitride, elemental Silicon and various Silicon Carbide fiber composites focusing mainly on melt infiltrated composites. Isothermal experiments at 1000 C utilized graphite fixtures to contain the Lead and material specimens under a low oxygen partial pressure environment. The corrosion weight loss values (grams/cm{sup 2} Hr) obtained for each of the pure materials showed SiC (monolithic CVD or Hexoloy) to have the best materials compatibility with Lead at this temperature. Increased weight loss values were observed for pure Silicon Nitride and elemental Silicon. For the SiC fiber composite samples those prepared using a SiC matrix material performed better than Si{sub 3}N{sub 4} as a matrix material. Composites prepared using a silicon melt infiltration process showed larger corrosion weight loss values due to the solubility of silicon in lead at these temperatures. When excess silicon was removed from these composite samples the corrosion performance for these material improved. These screening studies were used to guide future long term exposure (both isothermal and non-isothermal) experiments and Silicon Carbide composite fabrication work.

  18. Detail study of SiC MOSFET switching characteristics

    DEFF Research Database (Denmark)

    Li, Helong; Munk-Nielsen, Stig

    2014-01-01

    This paper makes detail study of the latest SiC MOSFETs switching characteristics in relation to gate driver maximum current, gate resistance, common source inductance and parasitic switching loop inductance. The switching performance of SiC MOSFETs in terms of turn on and turn off voltage...... and current are presented. Switching losses analysis is made according to the experiment results. The switching characteristics study and switching losses analysis could give some guidelines of gate driver IC and gate resistance selection, switching losses estimation and circuit design of SiC MOSFETs....

  19. Challenges in Switching SiC MOSFET without Ringing

    DEFF Research Database (Denmark)

    Li, Helong; Munk-Nielsen, Stig

    2014-01-01

    Switching SiC MOSFET without ringing in high frequency applications is important for meeting the EMI (ElectroMagnetic Interference) standard. Achieving a clean switching waveform of SiC MOSFET without additional components is becoming a challenge. In this paper, the switching oscillation mechanism...... is analysed in detail. According to the analysis, the optimal circuit design to minimize the parasitic parametric is introduced for a clean switching waveform. Experiment results show the clean switching waveform of SiC MOSFET. Guidelines are established for circuit design....

  20. Bubble formation in oxide scales on SiC

    Science.gov (United States)

    Mieskowski, D. M.; Mitchell, T. E.; Heuer, A. H.

    1984-01-01

    The oxidation of alpha-SiC single crystals and sintered alphaand beta-SiC polycrystals has been investigated at elevated temperatures. Bubble formation is commonly observed in oxide scales on polycrystalline SiC, but is rarely found on single-crystal scales; bubbles result from the preferential oxidation of C inclusions, which are abundant in SiC polycrystals. The absence of bubbles on single crystals, in fact, implies that diffusion of the gaseous species formed on oxidation, CO (or possibly SiO), controls the rate of oxidation of SiC.

  1. SiC MOSFETs based split output half bridge inverter

    DEFF Research Database (Denmark)

    Li, Helong; Munk-Nielsen, Stig; Beczkowski, Szymon

    2014-01-01

    Body diode of SiC MOSFETs has a relatively high forward voltage drop and still experiences reverse recovery phenomenon. Half bridge with split output aims to decouple both the body diode and junction capacitance of SiC MOSFETs, therefore achieving a reduced switching loss in a bridge configuration....... This paper makes the current commutation mechanism and efficiency analysis of half bridge with split output based on SiC MOSFETs. Current commutation process analysis is illustrated together with LTspice simulation and afterwards, verified by the experimental results of a double pulse test circuit with split...

  2. Bubble formation in oxide scales on SiC

    Science.gov (United States)

    Mieskowski, D. M.; Mitchell, T. E.; Heuer, A. H.

    1984-01-01

    The oxidation of alpha-SiC single crystals and sintered alphaand beta-SiC polycrystals has been investigated at elevated temperatures. Bubble formation is commonly observed in oxide scales on polycrystalline SiC, but is rarely found on single-crystal scales; bubbles result from the preferential oxidation of C inclusions, which are abundant in SiC polycrystals. The absence of bubbles on single crystals, in fact, implies that diffusion of the gaseous species formed on oxidation, CO (or possibly SiO), controls the rate of oxidation of SiC.

  3. Ytterbium: Transition at High Pressure from Face-Centered Cubic to Body-Centered Cubic Structure.

    Science.gov (United States)

    Hall, H T; Barnett, J D; Merrill, L

    1963-01-11

    Pressure of 40,000 atmospheres at 25 degrees C induces a phase transformation in ytterbium metal; the face-centered cubic structure changes to body-centered cubic. The radius of the atom changes from 1.82 to 1.75 A. At the same time the atom's volume decreases by 11 percent and the volume, observed macroscopically, decreases 3.2 percent.

  4. SiC Avalanche Photodiodes and Arrays Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Aymont Technology, Inc. (Aymont) will demonstrate the feasibility of SiC p-i-n avalanche photodiodes (APD) arrays. Aymont will demonstrate 4 x 4 arrays of 2 mm2 APDs...

  5. Microwave joining of SiC ceramics and composites

    Energy Technology Data Exchange (ETDEWEB)

    Ahmad, I.; Silberglitt, R.; Tian, Y.L. [FM Technologies, Inc., Fairfax, VA (United States); Katz, J.D. [Los Alamos National Lab., NM (United States)

    1997-04-01

    Potential applications of SiC include components for advanced turbine engines, tube assemblies for radiant burners and petrochemical processing and heat exchangers for high efficiency electric power generation systems. Reliable methods for joining SiC are required in order to cost-effectively fabricate components for these applications from commercially available shapes and sizes. This manuscript reports the results of microwave joining experiments performed using two different types of SiC materials. The first were on reaction bonded SiC, and produced joints with fracture toughness equal to or greater than that of the base material over an extended range of joining temperatures. The second were on continuous fiber-reinforced SiC/SiC composite materials, which were successfully joined with a commercial active brazing alloy, as well as by using a polymer precursor.

  6. An Extension of SIC Predictions to the Wiener Coactive Model.

    Science.gov (United States)

    Houpt, Joseph W; Townsend, James T

    2011-06-01

    The survivor interaction contrasts (SIC) is a powerful measure for distinguishing among candidate models of human information processing. One class of models to which SIC analysis can apply are the coactive, or channel summation, models of human information processing. In general, parametric forms of coactive models assume that responses are made based on the first passage time across a fixed threshold of a sum of stochastic processes. Previous work has shown that that the SIC for a coactive model based on the sum of Poisson processes has a distinctive down-up-down form, with an early negative region that is smaller than the later positive region. In this note, we demonstrate that a coactive process based on the sum of two Wiener processes has the same SIC form.

  7. DC characteristics of the SiC Schottky diodes

    National Research Council Canada - National Science Library

    W Janke; A Hapka; M Oleksy

    2011-01-01

      DC characteristics of the SiC Schottky diodes The isothermal and non-isothermal characteristics of silicon carbide Schottky diodes in the wide range of currents and ambient temperatures are investigated in this paper...

  8. Synthesis of micro-sized interconnected Si-C composites

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Donghai; Yi, Ran; Dai, Fang

    2016-02-23

    Embodiments provide a method of producing micro-sized Si--C composites or doped Si--C and Si alloy-C with interconnected nanoscle Si and C building blocks through converting commercially available SiO.sub.x (0

  9. Avalanche robustness of SiC Schottky diode

    OpenAIRE

    Dchar, Ilyas; Buttay, Cyril; Morel, Hervé

    2016-01-01

    International audience; Reliability is one of the key issues for the application of Silicon carbide (SiC) diode in high power conversion systems. For instance, in high voltage direct current (HVDC) converters, the devices can be submitted to high voltage transients which yield to avalanche. This paper presents the experimental evaluation of SiC diodes submitted to avalanche, and shows that the energy dissipation in the device can increase quickly and will not be uniformly distributed across t...

  10. Electrical Characterization of Defects in SiC Schottky Barriers

    Science.gov (United States)

    Schnabel, C. M.; Tabib-Azar, M.; Raffaelle, R. P.; Su, H. B.; Dudley, M.; Neudeck, P. G.; Bailey, S.

    2005-01-01

    We have been investigating the effect of screw dislocation and other structural defects on the electrical properties of SiC. SiC is a wide-bandgap semiconductor that is currently received much attention due to its favorable high temperature behavior and high electric field breakdown strength. Unfortunately, the current state-of-the-art crystal growth and device processing methods produce material with high defect densities, resulting in a limited commercial viability

  11. Face-Centered-Cubic Nanostructured Polymer Foams

    Science.gov (United States)

    Cui, C.; Baughman, R. H.; Liu, L. M.; Zakhidov, A. A.; Khayrullin, I. I.

    1998-03-01

    Beautifully iridescent polymer foams having Fm-3m cubic symmetry and periodicities on the scale of the wavelength of light have been synthesized by the templating of porous synthetic opals. These fabrication processes involve the filling of porous SiO2 opals (with typical cubic lattice parameters of 250 nm) with either polymers or polymer precursors, polymerization of the precursors if necessary, and removal of the fcc array of SiO2 balls to provide an all-polymer structure. The structures of these foams are similar to periodic minimal surfaces, although the Gaussian curvature can have both positive and negative values. Depending upon whether the internal surfaces of the opal are polymer filled or polymer coated, the polymer replica has either one or two sets of independent channels. We fill these channels with semiconductors, metals, or superconductors to provide electronic and optical materials with novel properties dependent on the nanoscale periodicity.

  12. Cubic Polynomials with Rational Roots and Critical Points

    Science.gov (United States)

    Gupta, Shiv K.; Szymanski, Waclaw

    2010-01-01

    If you want your students to graph a cubic polynomial, it is best to give them one with rational roots and critical points. In this paper, we describe completely all such cubics and explain how to generate them.

  13. Use of Pom Pons to Illustrate Cubic Crystal Structures.

    Science.gov (United States)

    Cady, Susan G.

    1997-01-01

    Describes a method that uses olefin pom pons to illustrate cubic crystal structure. Facilitates hands-on examination of different packing arrangements such as hexagonal close-packed and cubic close-packed structures. (JRH)

  14. Shape preserving rational bi-cubic function

    Directory of Open Access Journals (Sweden)

    Malik Zawwar Hussain

    2012-11-01

    Full Text Available The study is dedicated to the development of shape preserving interpolation scheme for monotone and convex data. A rational bi-cubic function with parameters is used for interpolation. To preserve the shape of monotone and convex data, the simple data dependent constraints are developed on these parameters in each rectangular patch. The developed scheme of this paper is confined, cheap to run and produce smooth surfaces.

  15. Cubic Lienard Equations with Quadratic Damping (Ⅱ)

    Institute of Scientific and Technical Information of China (English)

    Yu-quan Wang; Zhu-jun Jing

    2002-01-01

    Applying Hopf bifurcation theory and qualitative theory, we show that the general cubic Lienard equations with quadratic damping have at most three limit cycles. This implies that the guess in which the system has at most two limit cycles is false. We give the sufficient conditions for the system has at most three limit cycles or two limit cycles. We present two examples with three limit cycles or two limit cycles by using numerical simulation.

  16. Preparation of SiC Fiber Reinforced Nickel Matrix Composite

    Institute of Scientific and Technical Information of China (English)

    Lu Zhang; Nanlin Shi; Jun Gong; Chao Sunt

    2012-01-01

    A method of preparing continuous(Al+Al2O3)-coated SiC fiber reinforced nickel matrix composite was presented,in which the diffusion between SiC fiber and nickel matrix could be prevented.Magnetron sputtering is used to deposit Ni coating on the surface of the(Al+Al2O3)-coated SiC fiber in preparation of the precursor wires.It is shown that the deposited Ni coating combines well with the(Al+Al2O3) coating and has little negative effect on the tensile strength of(Al+Al2O3)-coated SiC fiber.Solid-state diffusion bonding process is employed to prepare the(Al+Al2O3)-coated SiC fiber reinforced nickel matrix with 37% fibers in volume.The solid-state diffusion bonding process is optimized and the optimum parameters are temperature of 870,pressure of 50 MPa and holding time of 2 h.Under this condition,the precursor wires can diffuse well,composite of full density can be formed and the(Al+Al2O3) coating is effective to restrict the reaction between SiC fiber and nickel matrix.

  17. Local atomic structure in cubic stabilized zirconia

    Energy Technology Data Exchange (ETDEWEB)

    Villella, P.; Conradson, S. D.; Espinosa-Faller, F. J.; Foltyn, S. R.; Sickafus, K. E.; Valdez, J. A.; Degueldre, C. A.

    2001-09-01

    X-ray-absorption fine structure measurements have been used to elucidate the local atomic structure of quaternary Zr, Y, Er, Ce/U cubic stabilized zirconia. These compounds display more complicated local environments than those reported for simpler binary systems. While the shortest cation-O distances are similar to those found in the binary cubic stabilized compounds, responding to the different sizes of the cations, we have identified large distortions in the first-shell oxygen distribution involving long, 2.8--3.2 {angstrom} cation-O distances that are similar to those found in the amorphous phase of zirconium. The cation-cation distributions are also found to be quite complicated (non-Gaussian) and element specific. The U-near neighbor distances are expanded relative to the Ce ions for which it substitutes, consistent with the larger size of the actinide, and the U-cation distribution is also more complicated. In terms of the effects of this substitution on the other cation sites, the local environment around Y is altered while the Zr and Er local environments remain unchanged. These results point out the importance of collective and correlated interactions between the different pairs of cations and the host lattice that are mediated by the local strain fields generated by the different cations. The presence of pair-specific couplings has not been commonly included in previous analyses and may have implications for the stabilization mechanisms of cubic zirconia.

  18. The special symplectic structure of binary cubics

    CERN Document Server

    Slupinski, Marcus

    2009-01-01

    Let $k$ be a field of characteristic not 2 or 3. Let $V$ be the $k$-space of binary cubic polynomials. The natural symplectic structure on $k^2$ promotes to a symplectic structure $\\omega$ on $V$ and from the natural symplectic action of $\\textrm{Sl}(2,k)$ one obtains the symplectic module $(V,\\omega)$. We give a complete analysis of this symplectic module from the point of view of the associated moment map, its norm square $Q$ (essentially the classical discriminant) and the symplectic gradient of $Q$. Among the results are a symplectic derivation of the Cardano-Tartaglia formulas for the roots of a cubic, detailed parameters for all $\\textrm{Sl}(2,k)$ and $\\textrm{Gl}(2,k)$-orbits, in particular identifying a group structure on the set of $\\textrm{Sl}(2,k)$-orbits of fixed nonzero discriminant, and a purely symplectic generalization of the classical Eisenstein syzygy for the covariants of a binary cubic. Such fine symplectic analysis is due to the special symplectic nature inherited from the ambient excepti...

  19. Method of synthesizing cubic system boron nitride

    Energy Technology Data Exchange (ETDEWEB)

    Yuzu, S.; Sumiya, H.; Degawa, J.

    1987-10-13

    A method is described for synthetically growing cubic system boron nitride crystals by using boron nitride sources, solvents for dissolving the boron nitride sources, and seed crystals under conditions of ultra-high pressure and high temperature for maintaining the cubic system boron nitride stable. The method comprises the following steps: preparing a synthesizing vessel having at least two chambers, arrayed in order in the synthesizing vessel so as to be heated according to a temperature gradient; placing the solvents having different eutectic temperatures in each chamber with respect to the boron nitride sources according to the temperature gradient; placing the boron nitride source in contact with a portion of each of the solvents heated at a relatively higher temperature and placing at least a seed crystal in a portion of each of the solvents heated at a relatively lower temperature; and growing at least one cubic system boron nitride crystal in each of the solvents in the chambers by heating the synthesizing vessel for establishing the temperature gradient while maintaining conditions of ultra-high pressure and high temperature.

  20. Continuous SiC fiber, CVI SiC matrix composites for nuclear applications: Properties and irradiation effects

    Energy Technology Data Exchange (ETDEWEB)

    Katoh, Yutai, E-mail: katohy@ornl.gov [Oak Ridge National Laboratory, Oak Ridge, TN (United States); Ozawa, Kazumi; Shih, Chunghao; Nozawa, Takashi [Oak Ridge National Laboratory, Oak Ridge, TN (United States); Shinavski, Robert J. [Hyper-Therm High Temperature Composites, Inc., Huntington Beach, CA (United States); Hasegawa, Akira [Tohoku University, Sendai, Miyagi-ken (Japan); Snead, Lance L. [Oak Ridge National Laboratory, Oak Ridge, TN (United States)

    2014-05-01

    Silicon carbide (SiC) continuous fiber-reinforced, SiC-matrix composites (SiC/SiC composites) are industrially available materials that are promising for applications in nuclear environments. The SiC/SiC composites consisting of near-stoichiometric SiC fibers, stoichiometric and fully crystalline SiC matrices, and the pyrocarbon (PyC) or multilayered PyC/SiC interphase between the fiber and the matrix are considered particularly resistant to very high radiation environments. This paper provides a summary compilation of the properties of these composites, specifically those with the chemically vapor-infiltrated (CVI) SiC matrices, including newly obtained results. The properties discussed are both in unirradiated condition and after neutron irradiation to intermediate fluence levels (most data are for <∼10 displacement per atom) at 300–1300 °C.

  1. The impact resistance of SiC and other mechanical properties of SiC and Si3N4

    Science.gov (United States)

    Bradt, R. C.

    1984-01-01

    Studies focused on the impact and mechanical behavior of SiC and Si3N4 at high temperatures are summarized. Instrumented Charpy impact testing is analyzed by a compliance method and related to strength; slow crack growth is related to processing, and creep is discussed. The transient nature of flaw populations during oxidation under load is emphasized for both SiC and Si3N4.

  2. /SiC Composite to Titanium Alloy

    Science.gov (United States)

    Hernandez, X.; Jiménez, C.; Mergia, K.; Yialouris, P.; Messoloras, S.; Liedtke, V.; Wilhelmi, C.; Barcena, J.

    2014-08-01

    In view of aerospace applications, an innovative structure for joining a Ti alloy to carbon fiber reinforced silicon carbide has been developed. This is based on the perforation of the CMC material, and this procedure results in six-fold increase of the shear strength of the joint compared to the unprocessed CMC. The joint is manufactured using the active brazing technique and TiCuAg as filler metal. Sound joints without defects are produced and excellent wetting of both the composite ceramic and the metal is observed. The mechanical shear tests show that failure occurs always within the ceramic material and not at the joint. At the CMC/filler, Ti from the filler metal interacts with the SiC matrix to form carbides and silicides. In the middle of the filler region depletion of Ti and formation of Ag and Cu rich regions are observed. At the filler/Ti alloy interface, a layered structure of the filler and Ti alloy metallic elements is formed. For the perforation to have a significant effect on the improvement of the shear strength of the joint appropriate geometry is required.

  3. SiC protective coating for photovoltaic retinal prosthesis

    Science.gov (United States)

    Lei, Xin; Kane, Sheryl; Cogan, Stuart; Lorach, Henri; Galambos, Ludwig; Huie, Philip; Mathieson, Keith; Kamins, Theodore; Harris, James; Palanker, Daniel

    2016-08-01

    Objective. To evaluate plasma-enhanced, chemically vapor deposited (PECVD) amorphous silicon carbide (α-SiC:H) as a protective coating for retinal prostheses and other implantable devices, and to study their failure mechanisms in vivo. Approach. Retinal prostheses were implanted in rats sub-retinally for up to 1 year. Degradation of implants was characterized by optical and scanning electron microscopy. Dissolution rates of SiC, SiN x and thermal SiO2 were measured in accelerated soaking tests in saline at 87 °C. Defects in SiC films were revealed and analyzed by selectively removing the materials underneath those defects. Main results. At 87 °C SiN x dissolved at 18.3 ± 0.3 nm d-1, while SiO2 grown at high temperature (1000 °C) dissolved at 0.104 ± 0.008 nm d-1. SiC films demonstrated the best stability, with no quantifiable change after 112 d. Defects in thin SiC films appeared primarily over complicated topography and rough surfaces. Significance. SiC coatings demonstrating no erosion in accelerated aging test for 112 d at 87 °C, equivalent to about 10 years in vivo, can offer effective protection of the implants. Photovoltaic retinal prostheses with PECVD SiC coatings exhibited effective protection from erosion during the 4 month follow-up in vivo. The optimal thickness of SiC layers is about 560 nm, as defined by anti-reflective properties and by sufficient coverage to eliminate defects.

  4. Thermal shock tests of $beta;-sic pellets prepared from laser synthesized nanoscale sic powders

    Science.gov (United States)

    Donato, A.; Borsella, E.; Botti, S.; Martelli, S.; Nannetti, C. A.; Mancini, M. R.; Morjan, I.

    1996-10-01

    Nanoscale SiC powders, produced by laser synthesis from gaseous precursors, have been successfully used to prepare sintered pellets. All the sintered samples showed the low temperature β-SiC structures and presented an enhanced thermal conductivity (> 20%) with respect to materials prepared from commercial powders. Samples hardness and toughness, comparable with commercial products, confirmed the good samples quality. The thermal shock tests have been performed by irradiating the pellets with a Nd-YAG pulsed laser (pulse duration and energy: 0.25 μs and 0.18 J or 0.4 ms and 0.65 J). The laser fluence (power density) was increased by reducing the spot size, up to the appearance of a visible surface damage. The threshold values for the structural damage were quantified using a heat flux parameter φ abs√ tp. The measured threshold value rose from ca. 20 MW/m 2 √s for the best materials prepared from commercial SiC powders to ca. 24 MW/m 2√s for the newly developed β-SiC.

  5. Ag diffusion in SiC high-energy grain boundaries: kinetic Monte Carlo study with first-principle calculations

    CERN Document Server

    Ko, Hyunseok; Szlufarska, Izabela; Morgan, Dane

    2016-01-01

    The diffusion of silver (Ag) impurities in high energy grain boundaries (HEGBs) of cubic (3C) silicon carbide (SiC) is studied using an ab initio based kinetic Monte Carlo (kMC) model. This study assesses the hypothesis that the HEGB diffusion is responsible for Ag release in Tristructural-Isotropic fuel particles, and provides a specific example to increase understanding of impurity diffusion in highly disordered grain boundaries. The HEGB environment was modeled by an amorphous SiC. The structure and stability of Ag defects were calculated using density functional theory code. The defect energetics suggested that the fastest diffusion takes place via an interstitial mechanism in a-SiC. The formation energy of Ag interstitials and the kinetic resolved activation energies between them were well approximated with Gaussian distributions that were then sampled in the kMC. The diffusion of Ag was simulated with the effective medium model using kMC. At 1200-1600C, Ag in a HEGB is predicted to exhibit an Arrhenius ...

  6. Atomic scale control and understanding of cubic silicon carbide surface reconstructions, nanostructures and nanochemistry

    Science.gov (United States)

    Soukiassian, Patrick G.; Enriquez, Hanna B.

    2004-05-01

    The atomic scale ordering and properties of cubic silicon carbide (bgr-SiC) surfaces and nanostructures are investigated by atom-resolved room and high-temperature scanning tunnelling microscopy (STM) and spectroscopy (STS), synchrotron radiation-based valence band and core level photoelectron spectroscopy (VB-PES, CL-PES) and grazing incidence x-ray diffraction (GIXRD). In this paper, we review the latest results on the atomic scale understanding of (i) the structure of bgr-SiC(100) surface reconstructions, (ii) temperature-induced metallic surface phase transition, (iii) one dimensional Si(C) self-organized nanostructures having unprecedented characteristics, and on (iv) nanochemistry at SiC surfaces with hydrogen. The organization of these surface reconstructions as well as the 1D nanostructures' self-organization are primarily driven by surface stress. In this paper, we address such important issues as (i) the structure of the Si-rich 3 × 2, the Si-terminated c (4 × 2), the C-terminated c (2 × 2) reconstructions of the bgr-SiC(100) surface, (ii) the temperature-induced reversible {\\mathrm {c}}(4\\times 2) \\Leftrightarrow 2\\times 1 metallic phase transition, (iii) the formation of highly stable (up to 900 °C) Si atomic and vacancy lines, (iv) the temperature-induced sp to sp3 diamond like surface transformation, and (v) the first example of H-induced semiconductor surface metallization on the bgr-SiC (100) 3 × 2 surface. The results are discussed and compared to other experimental and theoretical investigations.

  7. Cherenkov and Scintillation Properties of Cubic Zirconium

    Science.gov (United States)

    Christl, M.J.; Adams, J.H.; Parnell, T.A.; Kuznetsov, E.N.

    2008-01-01

    Cubic zirconium (CZ) is a high index of refraction (n =2.17) material that we have investigated for Cherenkov counter applications. Laboratory and proton accelerator tests of an 18cc sample of CZ show that the expected fast Cherenkov response is accompanied by a longer scintillation component that can be separated by pulse shaping. This presents the possibility of novel particle spectrometers which exploits both properties of CZ. Other high index materials being examined for Cherenkov applications will be discussed. Results from laboratory tests and an accelerator exposure will be presented and a potential application in solar energetic particle instruments will be discussed

  8. Tachyon Vacuum in Cubic Superstring Field Theory

    CERN Document Server

    Erler, Theodore

    2008-01-01

    In this paper we give an exact analytic solution for tachyon condensation in the modified (picture 0) cubic superstring field theory. We prove the absence of cohomology and, crucially, reproduce the correct value for the D-brane tension. The solution is surprising for two reasons: First, the existence of a tachyon vacuum in this theory has not been definitively established in the level expansion. Second, the solution {\\it vanishes} in the GSO$(-)$ sector, implying a ``tachyon vacuum'' solution exists even for a {\\it BPS} D-brane.

  9. Generalized fairing algorithm of parametric cubic splines

    Institute of Scientific and Technical Information of China (English)

    WANG Yuan-jun; CAO Yuan

    2006-01-01

    Kjellander has reported an algorithm for fairing uniform parametric cubic splines. Poliakoff extended Kjellander's algorithm to non-uniform case. However, they merely changed the bad point's position, and neglected the smoothing of tangent at bad point. In this paper, we present a fairing algorithm that both changed point's position and its corresponding tangent vector. The new algorithm possesses the minimum property of energy. We also proved Poliakoff's fairing algorithm is a deduction of our fairing algorithm. Several fairing examples are given in this paper.

  10. Fractal Symmetries: Ungauging the Cubic Code

    CERN Document Server

    Williamson, Dominic J

    2016-01-01

    Gauging is a ubiquitous tool in many-body physics. It allows one to construct highly entangled topological phases of matter from relatively simple phases and to relate certain characteristics of the two. Here we develop a gauging procedure for general submanifold symmetries of Pauli Hamiltonians, including symmetries of fractal type. We show a relation between the pre- and post- gauging models and use this to construct short range entangled phases with fractal like symmetries, one of which is mapped to the cubic code by the gauging.

  11. The Exact Limit of Some Cubic Towers

    DEFF Research Database (Denmark)

    Anbar Meidl, Nurdagül; Beelen, Peter; Nguyen, Nhut

    2016-01-01

    Recently, a new explicit tower of function fields was introduced by Bassa, Beelen, Garcia and Stichtenoth (BBGS). This resulted in currently the best known lower bound for Ihara’s constant in the case of non-prime finite fields. In particular over cubic fields, the tower’s limit is at least as good...... as Zink’s bound; i.e. λ(BBGS/Fq3 ) ≥ 2(q2 - 1)/(q + 2). In this paper, the exact value of λ(BBGS/Fq3 ) is computed. We also settle a question stated by Ihara....

  12. Competing structural instabilities in cubic perovskites

    CERN Document Server

    Vanderbilt, D

    1994-01-01

    We study the antiferrodistortive instability and its interaction with ferroelectricity in cubic perovskite compounds. Our first-principles calculations show that coexistence of both instabilities is very common. We develop a first-principles scheme to study the thermodynamics of these compounds when both instabilities are present, and apply it to SrTiO$_3$. We find that increased pressure enhances the antiferrodistortive instability while suppressing the ferroelectric one. Moreover, the presence of one instability tends to suppress the other. A very rich $P$--$T$ phase diagram results.

  13. X-ray fluorescence microtomography of SiC shells

    Energy Technology Data Exchange (ETDEWEB)

    Ice, G.E.; Chung, J.S. [Oak Ridge National Lab., TN (United States); Nagedolfeizi, M. [Univ. of Tennessee, Knoxville, TN (United States)

    1997-04-01

    TRISCO coated fuel particles contain a small kernel of nuclear fuel encapsulated by alternating layers of C and SiC. The TRISCO coated fuel particle is used in an advanced fuel designed for passive containment of the radioactive isotopes. The SiC layer provides the primary barrier for radioactive elements in the kernel. The effectiveness of this barrier layer under adverse conditions is critical to containment. The authors have begun the study of SiC shells from TRISCO fuel. They are using the fluorescent microprobe beamline 10.3.1. The shells under evaluation include some which have been cycled through a simulated core melt-down. The C buffer layers and nuclear kernels of the coated fuel have been removed by laser drilling through the SiC and then exposing the particle to acid. Elements of interest include Ru, Sb, Cs, Ce and Eu. The radial distribution of these elements in the SiC shells can be attributed to diffusion of elements in the kernel during the melt-down. Other elements in the shells originate during the fabrication of the TRISCO particles.

  14. Hysteresis in the Active Oxidation of SiC

    Science.gov (United States)

    Jacobson, Nathan S.; Harder, Bryan J.; Myers, Dwight L.

    2011-01-01

    Si and SiC show both passive oxidation behavior where a protective film of SiO2 forms and active oxidation behavior where a volatile suboxide SiO(g) forms. The active-to-passive and passive-to-active oxidation transitions are explored for both Si and SiC. Si shows a dramatic difference between the P(O2) for the two transitions of 10-4 bar. The active-to-passive transition is controlled by the condition for SiO2/Si equilibrium and the passive-to-active transition is controlled by the decomposition of SiO2. In the case of SiC, the P(O2) for these transitions are much closer. The active-to-passive transition appears to be controlled by the condition for SiO2/SiC equilibrium. The passive-to-active transition appears to be controlled by the interfacial reaction of SiC and SiO2 and subsequent generation of gases at the interface which leads to scale breakdown.

  15. TRISO coated fuel particles with enhanced SiC properties

    Energy Technology Data Exchange (ETDEWEB)

    Lopez-Honorato, E.; Tan, J.; Meadows, P.J. [Materials Science Centre, School of Materials, University of Manchester, Grosvenor St., Manchester M1 7HS (United Kingdom); Marsh, G. [Nexia Solutions Ltd., Spingfields, PR4 0XJ (United Kingdom); Xiao, P., E-mail: ping.xiao@manchester.ac.u [Materials Science Centre, School of Materials, University of Manchester, Grosvenor St., Manchester M1 7HS (United Kingdom)

    2009-07-15

    The silicon carbide (SiC) layer used for the formation of TRISO coated fuel particles is normally produced at 1500-1650 deg. C via fluidized bed chemical vapor deposition from methyltrichlorosilane in a hydrogen environment. In this work, we show the deposition of SiC coatings with uniform grain size throughout the coating thickness, as opposed to standard coatings which have larger grain sizes in the outer sections of the coating. Furthermore, the use of argon as the fluidizing gas and propylene as a carbon precursor, in addition to hydrogen and methyltrichlorosilane, allowed the deposition of stoichiometric SiC coatings with refined microstructure at 1400 and 1300 deg. C. The deposition of SiC at lower deposition temperatures was also advantageous since the reduced heat treatment was not detrimental to the properties of the inner pyrolytic carbon which generally occurs when SiC is deposited at 1500 deg. C. The use of a chemical vapor deposition coater with four spouts allowed the deposition of uniform and spherical coatings.

  16. New primary pressure calibrants for high pressure and temperature scale: SiC-3C and cBN are possible candidates

    Science.gov (United States)

    Zhuravlev, Kirill; Goncharov, Alexander; Prakapenka, Vitali

    2011-03-01

    Since the invention of a diamond-anvil cell, various high-pressure scales for in situ pressure measurements have been realized. Ruby-based pressure scale (Mao et al., 1986) is the best known and high-pressure scientific community has been using it for over two decades. However, it has limited use at elevated temperatures, due to the weakening and broadening of the ruby fluorescence line. The recent developments in the field of high temperature, high pressure physics and geophysics require some alternative pressure scale, capable of measuring pressures at temperatures up to 3000 K. Cubic boron nitride (cBN) was recently proposed as the possible pressure calibrant. It has been suggested that the simultaneous use of x-ray diffraction to measure density and Brillouin spectroscopy to obtain elastic properties of the crystal can be used to construct the pressure scale independent of any other pressure standards. However, the acoustic velocities of cBN are very close to those of diamond and, therefore, are hard to resolve in experiment in diamond-anvil cell. Another possible primary pressure calibrant is cubic silicon carbide (SiC-3C). We performed single crystal x-ray diffraction and Brillouin spectroscopy up to 1 Mbar in pressure at room temperature in the diamond-anvil cell and show that cBN and SiC-3C, indeed, can be used in constructing reliable and accurate high-pressure, high-temperature scale.

  17. Rheological properties of Cubic colloidal suspensions

    Science.gov (United States)

    Boromand, Arman; Maia, Joao

    2016-11-01

    Colloidal and non-colloidal suspensions are ubiquitous in many industrial application. There are numerous studies on these systems to understand and relate their complex rheological properties to their microstructural evolution under deformation. Although most of the experimental and simulation studies are centered on spherical particles, in most of the industrial applications the geometry of the colloidal particles deviate from the simple hard sphere and more complex geometries exist. Recent advances in microfabrication paved the way to fabricate colloidal particles with complex geometries for applications in different areas such as drug delivery where the fundamental understanding of their dynamics has remained unexplored. In this study, using dissipative particle dynamics, we investigate the rheological properties of cubic (superball) particles which are modeled as the cluster of core-modified DPD particles. Explicit representation of solvent particles in the DPD scheme will conserve the full hydrodynamic interactions between colloidal particles. Rheological properties of these cubic suspensions are investigated in the dilute and semi-dilute regimes. The Einstein and Huggins coefficients for these particles with different superball exponent will be calculate which represent the effect of single particle's geometry and multibody interactions on viscosity, respectively. The response of these suspensions is investigated under simple shear and oscillatory shear where it is shown that under oscillation these particles tend to form crystalline structure giving rise to stronger shear-thinning behavior recently measured experimentally.

  18. Nanocrystalline SiC and Ti3SiC2 Alloys for Reactor Materials: Thermal and Mechanical Properties

    Energy Technology Data Exchange (ETDEWEB)

    Henager, Charles H.; Alvine, Kyle J.; Roosendaal, Timothy J.; Shin, Yongsoon; Nguyen, Ba Nghiep; Borlaug, Brennan A.; Jiang, Weilin

    2014-04-01

    SiC-polymers (pure polycarbosilane and polycarbosilane filled with SiC-particles) are being combined with Si and TiC powders to create a new class of polymer-derived ceramics for consideration as advanced nuclear materials in a variety of applications. Compared to pure SiC these materials have increased fracture toughness with only slightly reduced thermal conductivity. Future work with carbon nanotube (CNT) mats will be introduced with the potential to increase the thermal conductivity and the fracture toughness. At present, this report documents the fabrication of a new class of monolithic polymer derived ceramics, SiC + SiC/Ti3SiC2 dual phase materials. The fracture toughness of the dual phase material was measured to be significantly greater than Hexoloy SiC using indentation fracture toughness testing. However, thermal conductivity of the dual phase material was reduced compared to Hexoloy SiC, but was still appreciable, with conductivities in the range of 40 to 60 W/(m K). This report includes synthesis details, optical and scanning electron microscopy images, compositional data, fracture toughness, and thermal conductivity data.

  19. On the ab initio description of the optical properties of semiconductors, especially of SiC polytypes; Zur ab initio Beschreibung der optischen Eigenschaften von Halbleitern, insbesondere von SiC-Polytypen

    Energy Technology Data Exchange (ETDEWEB)

    Adolph, B.

    1998-07-01

    In the present thesis ab initio calculations of the optical properties of a series of semiconductor were perormed. In their center lies the novel material system SiC. The theoretical description of the valence electron system of the materials studied pursued in the framework of the independent-particle respectively independent-quasiparticle approximation. The numerical solution of this many-particle problem was parameter-freely performed under application of the density functional theory (DFT) in the framework of its local approximation (LDA), whereby especially BHS pseudopotentials and a plane-wave basis have been applied. In order to regard the excitation aspect not contained in the DFT-LDA quasiparticle corrections were included in the framework of the GW approximation. In the example of the group-IV compounds (Si, SiC, and C) the influence of the applied gauge on the linear optical properties was studied. In the second main topic of this thesis the second-order nonlinear optical properties, espeically the seconfd-harmonic generation, were studied for different materials starting with the cubic III-V compounds GaP, GaAs, InP, and InAs and the cubic polytype of SiC.

  20. Structural Properties of Liquid SiC during Rapid Solidification

    Directory of Open Access Journals (Sweden)

    WanJun Yan

    2013-01-01

    Full Text Available The rapid solidification of liquid silicon carbide (SiC is studied by molecular dynamic simulation using the Tersoff potential. The structural properties of liquid and amorphous SiC are analyzed by the radial distribution function, angular distribution function, coordination number, and visualization technology. Results show that both heteronuclear and homonuclear bonds exist and no atomic segregation occurs during solidification. The bond angles of silicon and carbon atoms are distributed at around 109° and 120°, respectively, and the average coordination number is <4. Threefold carbon atoms and fourfold silicon atoms are linked together by six typical structures and ultimately form a random network of amorphous structure. The simulated results help understand the structural properties of liquid and amorphous SiC, as well as other similar semiconductor alloys.

  1. Advanced SiC composites for fusion applications

    Energy Technology Data Exchange (ETDEWEB)

    Snead, L.L.; Schwarz, O.J. [Oak Ridge National Lab., TN (United States)

    1995-04-01

    This is a short review of the motivation for and progress in the development of ceramic matrix composites for fusion. Chemically vapor infiltrated silicon carbide (SiC) composites have been fabricated from continuous fibers of either SiC or graphite and tested for strength and thermal conductivity. Of significance is the the Hi-Nicalon{trademark} SiC based fiber composite has superior unirradiated properties as compared to the standard Nicalon grade. Based on previous results on the stability of the Hi-Nicalon fiber, this system should prove more resistant to neutron irradiation. A graphite fiber composite has been fabricated with very good mechnical properties and thermal conductivity an order of magnitude higher than typical SiC/SiC composites.

  2. Thermochemistry and growth mechanism of SiC nanowires

    Science.gov (United States)

    Chen, Jianjun; Ding, Lijuan; Xin, Lipeng; Zeng, Fan; Chen, Jun

    2017-09-01

    The chemical reaction thermodynamics and a novel two-stage growth mechanism of SiC nanowires synthesized by carbothermal reduction reactions were investigated based on the Si-C-O systems over a wide temperature range (1050 ≤ T ≤ 2000 K). The carbothermal reduction reaction process involves the fast formation of gaseous SiO and CO crucial intermediates, and the further carbon reduction of SiO to SiC. The relationship between the free energy changes and temperature at different pressures was also discussed. Some fundamental data in the work can help to analyze the thermochemistry of the carbothermal reduction reaction in the Si-C-O system, which is beneficial to optimize the temperature, pressure and the input precursors for controlling the SiC nanowire growth.

  3. Detection Simulation of SiC Semiconductor Detector

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Hong Yeop; Kim, Jeong Dong; Lee, Yong Deok; Kim, Ho Dong [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

    2013-10-15

    In a high radiation environment, it has received attention as a material for detecting radiation (neutron). As the field of application of a SIC neutron detector, the semiconductor detector used in cosmic rays was proposed by Ruddy. Recently, X-ray and low-energy gamma ray spectrometry with SiC detectors has been reported. Its usability has recently been being proved in neutron dose surveillance in BNCT (Boron-Capture Neutron Therapy), thermal neutron detection in a waste drum, nuclear material surveillance, and fast neutron detection. In addition, in 2006, an experiment was actually performed by Natsume on spent nuclear fuel. SIC is suitable for radiation surveillance in a complex radiation field emitted from spent nuclear fuel and the pyropocess process. In the radiation field of spent nuclear fuel, neutrons and gamma rays are generated. In this research, the performance of a SiC detector made at KAERI was evaluated to obtain a discriminated neutron signal. First, using neutron ({sup 252}Cf), alpha ({sup 241}Am), and gamma ({sup 60}Co) sources, a SiC semi- conductor detector was tested. The energy spectrum in a complex radiation field was simulated using the MCNPX 2.5. Finally, the experimental results by Ruddy were compared with the simulation results. Research result, whether the SiC semiconductor detector operating or not was confirmed through the simulation according to the neutron, gamma. The simulation results were similar to those of Ruddy. A further study is underway to investigate the discriminated neutron signal of a complex radiation field.

  4. Packaging Technology for SiC High Temperature Electronics

    Science.gov (United States)

    Chen, Liang-Yu; Neudeck, Philip G.; Spry, David J.; Meredith, Roger D.; Nakley, Leah M.; Beheim, Glenn M.; Hunter, Gary W.

    2017-01-01

    High-temperature environment operable sensors and electronics are required for long-term exploration of Venus and distributed control of next generation aeronautical engines. Various silicon carbide (SiC) high temperature sensors, actuators, and electronics have been demonstrated at and above 500 C. A compatible packaging system is essential for long-term testing and application of high temperature electronics and sensors in relevant environments. This talk will discuss a ceramic packaging system developed for high temperature electronics, and related testing results of SiC integrated circuits at 500 C facilitated by this high temperature packaging system, including the most recent progress.

  5. Plasma synthesis and characterization of ultrafine SiC

    Energy Technology Data Exchange (ETDEWEB)

    Vogt, G.J.; Phillips, D.S.; Taylor, T.N.

    1986-01-01

    Ultrafine SiC powders have been prepared by gas phase synthesis from silane and methane in an argon thermal rf-plasma. Bulk properties of the powders were determined by elemental analysis, x-ray diffractin, helium pycnometry, and BET surface area measurements. The near-surface composition and structure of the particles were examined by x-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM). In addition to free silicon and carbon particles in the powders, free carbon and various silicon/carbon/oxygen species were found on the surface of the SiC particles.

  6. Development of CVD Mullite Coatings for SiC Fibers

    Energy Technology Data Exchange (ETDEWEB)

    Sarin, V.K.; Varadarajan, S.

    2000-03-15

    A process for depositing CVD mullite coatings on SiC fibers for enhanced oxidation and corrosion, and/or act as an interfacial protective barrier has been developed. Process optimization via systematic investigation of system parameters yielded uniform crystalline mullite coatings on SiC fibers. Structural characterization has allowed for tailoring of coating structure and therefore properties. High temperature oxidation/corrosion testing of the optimized coatings has shown that the coatings remain adherent and protective for extended periods. However, preliminary tests of coated fibers showed considerable degradation in tensile strength.

  7. On the band gap variation in SiC polytypes

    Energy Technology Data Exchange (ETDEWEB)

    Haeringen, W. van; Bobbert, P.A.; Backes, W.H. [Technische Univ. Eindhoven (Netherlands). Dept. of Physics

    1997-07-01

    Electronic band gaps of SiC polytypes are reproduced within an interface matching technique of electronic wave functions. Essential features resulting from this treatment are introduced in a one-dimensional model, leading to a transparent description of the electronic band gap variation among polytypes. It is discussed in what sense the polytypes of SiC are exceptional in showing a relatively strong band gap variation, contrary to e.g. polytypes of ZnS and hypothetical polytypes made up from Si, C or AlAs. (orig.) 36 refs.

  8. On the Band Gap Variation in SiC Polytypes

    Science.gov (United States)

    van Haeringen, W.; Bobbert, P. A.; Backes, W. H.

    1997-07-01

    Electronic band gaps of SiC polytypes are reproduced within an interface matching technique of electronic wave functions. Essential features resulting from this treatment are introduced in a one-dimensional model, leading to a transparent description of the electronic band gap variation among polytypes. It is discussed in what sense the polytypes of SiC are exceptional in showing a relatively strong band gap variation, contrary to e.g. polytypes of ZnS and hypothetical polytypes made up from Si, C or AlAs.

  9. All unitary cubic curvature gravities in D dimensions

    Energy Technology Data Exchange (ETDEWEB)

    Sisman, Tahsin Cagri; Guellue, Ibrahim; Tekin, Bayram, E-mail: sisman@metu.edu.tr, E-mail: e075555@metu.edu.tr, E-mail: btekin@metu.edu.tr [Department of Physics, Middle East Technical University, 06531 Ankara (Turkey)

    2011-10-07

    We construct all the unitary cubic curvature gravity theories built on the contractions of the Riemann tensor in D-dimensional (anti)-de Sitter spacetimes. Our construction is based on finding the equivalent quadratic action for the general cubic curvature theory and imposing ghost and tachyon freedom, which greatly simplifies the highly complicated problem of finding the propagator of cubic curvature theories in constant curvature backgrounds. To carry out the procedure we have also classified all the unitary quadratic models. We use our general results to study the recently found cubic curvature theories using different techniques and the string generated cubic curvature gravity model. We also study the scattering in critical gravity and give its cubic curvature extensions.

  10. First-principle Calculation of the Properties of Ti3SiC2

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    The electronic and structural properties for Ti3SiC2 were studied using the first-principle calculation method. By using the calculated band structure and density of states, the high electrical conductivity of Ti3SiC2 are explained.The bonding character of Ti3SiC2 is analyzed in the map of charge density distribution.

  11. Influence of microstructure on hydrothermal corrosion of chemically vapor processed SiC composite tubes

    Science.gov (United States)

    Kim, Daejong; Lee, Ho Jung; Jang, Changheui; Lee, Hyeon-Geun; Park, Ji Yeon; Kim, Weon-Ju

    2017-08-01

    Multi-layered SiC composites consisting of monolithic SiC and a SiCf/SiC composite are one of the accident tolerant fuel cladding concepts in pressurized light water reactors. To evaluate the integrity of the SiC fuel cladding under normal operating conditions of a pressurized light water reactor, the hydrothermal corrosion behavior of multi-layered SiC composite tubes was investigated in the simulated primary water environment of a pressurized water reactor without neutron fluence. The results showed that SiC phases with good crystallinity such as Tyranno SA3 SiC fiber and monolithic SiC deposited at 1200 °C had good corrosion resistance. However, the SiC phase deposited at 1000 °C had less crystallinity and severely dissolved in water, particularly the amorphous SiC phase formed along grain boundaries. Dissolved hydrogen did not play a significant role in improving the hydrothermal corrosion resistance of the CVI-processed SiC phases containing amorphous SiC, resulting in a significant weight loss and reduction of hoop strength of the multi-layered SiC composite tubes after corrosion.

  12. Cubic meter volume optical coherence tomography

    Science.gov (United States)

    WANG, ZHAO; POTSAID, BENJAMIN; CHEN, LONG; DOERR, CHRIS; LEE, HSIANG-CHIEH; NIELSON, TORBEN; JAYARAMAN, VIJAYSEKHAR; CABLE, ALEX E.; SWANSON, ERIC; FUJIMOTO, JAMES G.

    2017-01-01

    Optical coherence tomography (OCT) is a powerful three-dimensional (3D) imaging modality with micrometer-scale axial resolution and up to multi-GigaVoxel/s imaging speed. However, the imaging range of high-speed OCT has been limited. Here, we report 3D OCT over cubic meter volumes using a long coherence length, 1310 nm vertical-cavity surface-emitting laser and silicon photonic integrated circuit dual-quadrature receiver technology combined with enhanced signal processing. We achieved 15 µm depth resolution for tomographic imaging at a 100 kHz axial scan rate over a 1.5 m range. We show 3D macroscopic imaging examples of a human mannequin, bicycle, machine shop gauge blocks, and a human skull/brain model. High-bandwidth, meter-range OCT demonstrates new capabilities that promise to enable a wide range of biomedical, scientific, industrial, and research applications. PMID:28239628

  13. Black holes in Einsteinian cubic gravity

    CERN Document Server

    Hennigar, Robie A

    2016-01-01

    Using numerical and perturbative methods, we construct the first examples of black hole solutions in Einsteinian cubic gravity and study their thermodynamics. Focusing first on four dimensional solutions, we show that these black holes have a novel equation of state in which the pressure is a quadratic function of the temperature. Despite this, they undergo a first order phase transition with associated van der Waals behaviour. We then construct perturbative solutions for general $D \\ge 5$ and study the properties of these solutions for $D=5$ and $D=6$ in particular. We find novel examples of zeroth order phase transitions and find super-entropic behaviour over a large portion of the parameter space. We analyse the specific heat, determining that the black holes are thermodynamically stable over large regions of parameter space.

  14. Triangulation of cubic panorama for view synthesis.

    Science.gov (United States)

    Zhang, Chunxiao; Zhao, Yan; Wu, Falin

    2011-08-01

    An unstructured triangulation approach, new to our knowledge, is proposed to apply triangular meshes for representing and rendering a scene on a cubic panorama (CP). It sophisticatedly converts a complicated three-dimensional triangulation into a simple three-step triangulation. First, a two-dimensional Delaunay triangulation is individually carried out on each face. Second, an improved polygonal triangulation is implemented in the intermediate regions of each of two faces. Third, a cobweblike triangulation is designed for the remaining intermediate regions after unfolding four faces to the top/bottom face. Since the last two steps well solve the boundary problem arising from cube edges, the triangulation with irregular-distribution feature points is implemented in a CP as a whole. The triangular meshes can be warped from multiple reference CPs onto an arbitrary viewpoint by face-to-face homography transformations. The experiments indicate that the proposed triangulation approach provides a good modeling for the scene with photorealistic rendered CPs.

  15. Black holes in a cubic Galileon universe

    CERN Document Server

    Babichev, Eugeny; Lehébel, Antoine; Moskalets, Tetiana

    2016-01-01

    We find and study the properties of black hole solutions for a subclass of Horndeski theory including the cubic Galileon term. The theory under study has shift symmetry but not reflection symmetry for the scalar field. The Galileon is assumed to have linear time dependence characterized by a velocity parameter. We give analytic 3-dimensional solutions that are akin to the BTZ solutions but with a non-trivial scalar field that modifies the effective cosmological constant. We then study the 4-dimensional asymptotically flat and de Sitter solutions. The latter present three different branches according to their effective cosmological constant. For two of these branches, we find families of black hole solutions, parametrized by the velocity of the scalar field. These spherically symmetric solutions, obtained numerically, are different from GR solutions close to the black hole event horizon, while they have the same de-Sitter asymptotic behavior. The velocity parameter represents black hole primary hair.

  16. Finite element differential forms on cubical meshes

    CERN Document Server

    Arnold, Douglas N

    2012-01-01

    We develop a family of finite element spaces of differential forms defined on cubical meshes in any number of dimensions. The family contains elements of all polynomial degrees and all form degrees. In two dimensions, these include the serendipity finite elements and the rectangular BDM elements. In three dimensions they include a recent generalization of the serendipity spaces, and new H(curl) and H(div) finite element spaces. Spaces in the family can be combined to give finite element subcomplexes of the de Rham complex which satisfy the basic hypotheses of the finite element exterior calculus, and hence can be used for stable discretization of a variety of problems. The construction and properties of the spaces are established in a uniform manner using finite element exterior calculus.

  17. Capturing dynamic cation hopping in cubic pyrochlores

    Science.gov (United States)

    Brooks Hinojosa, Beverly; Asthagiri, Aravind; Nino, Juan C.

    2011-08-01

    In direct contrast to recent reports, density functional theory predicts that the most stable structure of Bi2Ti2O7 pyrochlore is a cubic Fd3¯m space group by accounting for atomic displacements. The displaced Bi occupies the 96g(x,x,z) Wyckoff position with six equivalent sites, which create multiple local minima. Using nudged elastic band method, the transition states of Bi cation hopping between equivalent minima were investigated and an energy barrier between 0.11 and 0.21 eV was determined. Energy barriers associated with the motion of Bi between equivalent sites within the 96g Wyckoff position suggest the presence of dielectric relaxation in Bi2Ti2O7.

  18. On the plane-wave cubic vertex

    CERN Document Server

    Lucietti, J; Sinha, A K; Lucietti, James; Schäfer-Nameki, Sakura; Sinha, Aninda

    2004-01-01

    The exact bosonic Neumann matrices of the cubic vertex in plane-wave light-cone string field theory are derived using the contour integration techniques developed in our earlier paper. This simplifies the original derivation of the vertex. In particular, the Neumann matrices are written in terms of \\mu-deformed Gamma-functions, thus casting them into a form that elegantly generalizes the well-known flat-space solution. The asymptotics of the \\mu-deformed Gamma-functions allow one to determine the large-\\mu behaviour of the Neumann matrices including exponential corrections. We provide an explicit expression for the first exponential correction and make a conjecture for the subsequent exponential correction terms.

  19. Polarization conversion in cubic Raman crystals

    Science.gov (United States)

    McKay, Aaron; Sabella, Alexander; Mildren, Richard P.

    2017-01-01

    Nonlinear conversion of unpolarized beams to lower frequencies is generally inefficient in c(2) materials, as it is challenging to achieve phase-matching for input ordinary and extraordinary beams simultaneously in the normal dispersion regime. Here, we show that cubic Raman crystals having doubly and triply degenerate (E and F type) modes provide a method for efficient nonlinear frequency downconversion of an unpolarized beam and yield a linearly polarized output state. Using Mueller calculus, optimal crystal directions for such polarization conversion are determined. Using diamond, an example of an F-class Raman crystal, we have verified that such conversion is possible with near quantum-defect-limited slope efficiency and a linear polarization contrast of more than 23.9 dB. PMID:28169327

  20. On the Stability of Cubic Galileon Accretion

    CERN Document Server

    Bergliaffa, Santiago P E

    2016-01-01

    We examine the stability of steady-state galileon accretion for the case of a Schwarzshild black hole. Considering the galileon action up to the cubic term in a static and spherically symmetric background we obtain the general solution for the equation of motion which is divided in two branches. By perturbing this solution we define an effective metric which determines the propagation of fluctuations. In this general picture we establish the position of the sonic horizon together with the matching condition of the two branches on it. Restricting to the case of a Schwarzschild background, we show, via the analysis of the energy of the perturbations and its time derivative, that the accreting field is linearly stable.

  1. Low pressure growth of cubic boron nitride films

    Science.gov (United States)

    Ong, Tiong P. (Inventor); Shing, Yuh-Han (Inventor)

    1997-01-01

    A method for forming thin films of cubic boron nitride on substrates at low pressures and temperatures. A substrate is first coated with polycrystalline diamond to provide a uniform surface upon which cubic boron nitride can be deposited by chemical vapor deposition. The cubic boron nitride film is useful as a substitute for diamond coatings for a variety of applications in which diamond is not suitable. any tetragonal or hexagonal boron nitride. The cubic boron nitride produced in accordance with the preceding example is particularly well-suited for use as a coating for ultra hard tool bits and abrasives, especially those intended to use in cutting or otherwise fabricating iron.

  2. Shape preserving rational cubic spline for positive and convex data

    Directory of Open Access Journals (Sweden)

    Malik Zawwar Hussain

    2011-11-01

    Full Text Available In this paper, the problem of shape preserving C2 rational cubic spline has been proposed. The shapes of the positive and convex data are under discussion of the proposed spline solutions. A C2 rational cubic function with two families of free parameters has been introduced to attain the C2 positive curves from positive data and C2 convex curves from convex data. Simple data dependent constraints are derived on free parameters in the description of rational cubic function to obtain the desired shape of the data. The rational cubic schemes have unique representations.

  3. Long SiC nanowires synthesized from off-gases of the polycarbosilane-derived SiC preparation

    Energy Technology Data Exchange (ETDEWEB)

    Li, Gong-Yi; Li, Xiao-Dong; Wang, Hao [National University of Defense Technology, State Key Laboratory of Advanced Ceramic Fibers and Composites, College of Aerospace and Materials Engineering, Changsha (China); Liu, Lin [Wuhan Mechanical Technology College, Wuhan (China)

    2010-02-15

    In this communication, we report on the attempt to make full use of the off-gases from polycarbosilane-derived SiC preparation, and we successfully synthesized long SiC nanowires in large areas with Fe(NO{sub 3}){sub 3} as catalyst. The nanowires have diameters of about 80-300 nm and lengths of millimeters, and they are identified as single crystals {beta}-SiC along the left angle 111 right angle direction. The VLS mechanism was employed to interpret the nanowire growth. (orig.)

  4. Performance Evaluation of Split Output Converters with SiC MOSFETs and SiC Schottky Diodes

    OpenAIRE

    Yan, Qingzeng; Yuan, Xibo; Geng, Yiwen; Charalambous, Apollo; Wu, Xioajie

    2017-01-01

    The adoption of silicon carbide (SiC) MOSFETS and SiC Schottky diodes in power converters promises a further improvement of the attainable power density and system efficiency, while it is restricted by several issues caused by the ultra-fast switching, such as phase-leg shoot-through (‘crosstalk’ effect), high turn-on losses, electromagnetic interference (EMI), etc. This paper presents a split output converter which can overcome the limitations of the standard two-level voltage source convert...

  5. Conducted EMI in Inverters with SiC Transistors

    NARCIS (Netherlands)

    Gong, X.

    2013-01-01

    Conducted EMI in Inverters with SiC Transistors Electromagnetic Interference (EMI) is the main side effect accompanied with the fast voltage and current switching transients in power electronics applications. Compliance of the Electromagnetic Compatibility (EMC) standard is prescribed for any power

  6. Conducted EMI in Inverters with SiC Transistors

    NARCIS (Netherlands)

    Gong, X.

    2013-01-01

    Conducted EMI in Inverters with SiC Transistors Electromagnetic Interference (EMI) is the main side effect accompanied with the fast voltage and current switching transients in power electronics applications. Compliance of the Electromagnetic Compatibility (EMC) standard is prescribed for any power

  7. -SiC nanocomposite coatings synthesized by co-electrodeposition

    Science.gov (United States)

    Masoudi, Mehran; Hashim, Mansor; Kamari, Halimah Mohamed

    2014-08-01

    In the present work, Ni-Al2O3, Ni-SiC and novel Ni-Al2O3-SiC metal matrix composite (MMC) coatings were electrodeposited onto pure copper samples using a modified Watt's nickel electroplating bath containing nano alumina and silicon carbide particles with an average particle size of 50 nm. The composition, crystalline structure and surface morphology of the deposits were characterized by X-ray diffractometry (XRD), energy-dispersive X-ray spectroscopy (EDS) and field emission scanning electron microscopy (FESEM). The results indicated that Ni-Al2O3-SiC hybrid composite films with an acceptable homogeneity and granular structure having 9.2 and 7.7 % vol. Al2O3 and SiC nanoparticles, respectively were developed successfully. The nanoparticles incorporated in the nickel layer effectively increased the micro hardness and wear resistance owing to dispersion and grain-refinement strengthening, changing the nickel matrix morphology as well as the texture and preferred grain growth direction from to the close-packed . The oxidation resistance of the Ni-Al2O3-SiC hybrid composite coatings was measured to be approximately 41 % greater than the unreinforced Ni deposit and almost 30 % better than the Ni-Al2O3 composite coatings.

  8. Photoluminescence origin of nanocrystalline SiC films

    Institute of Scientific and Technical Information of China (English)

    LIU Ji-wen; LI Juan; LI Yan-hui; LI Chang-ling; ZHAO Yan-ping; ZHAO Jie; XU Jing-jun

    2005-01-01

    The nanocrystalline SiC films were prepared on Si (111) substrates by rf magnetron sputtering and then annealed at 800℃ and 1 000℃ for 30 minutes in a vacuum annealing system. The crystal structure and crystallization of as-annealed SiC films were determined by the Fourier transform infrared (FTIR) absorption spectra and the X-ray diffraction (XRD) analysis. Measurement of photoluminescence (PL) of the nanocrystalline SiC (nc-SiC) films shows that the blue light with 473 nm and 477 nm wavelengths emitted at room temperature and that the PL peak shifts to shorter wavelength side and the PL intensity becomes stronger as the annealing temperature decreases. The time-resolved spectrum of the PL at 477 nm exhibits a bi-exponential decay process with lifetimes of 600 ps and 5 ns and a characteristic of the direct band gap.The strong blue light emission with short PL lifetimes suggests that the quantum confinement effect of the SiC nanocrystals resulted in the radiative recombination of the direct optical transitions.

  9. Performance of bulk SiC radiation detectors

    CERN Document Server

    Cunningham, W; Lamb, G; Scott, J; Mathieson, K; Roy, P; Bates, R; Thornton, P; Smith, K M; Cusco, R; Glaser, M; Rahman, M

    2002-01-01

    SiC is a wide-gap material with excellent electrical and physical properties that may make it an important material for some future electronic devices. The most important possible applications of SiC are in hostile environments, such as in car/jet engines, within nuclear reactors, or in outer space. Another area where the material properties, most notably radiation hardness, would be valuable is in the inner tracking detectors of particle physics experiments. Here, we describe the performance of SiC diodes irradiated in the 24 GeV proton beam at CERN. Schottky measurements have been used to probe the irradiated material for changes in I-V characteristics. Other methods, borrowed from III-V research, used to study the irradiated surface include atomic force microscope scans and Raman spectroscopy. These have been used to observe the damage to the materials surface and internal lattice structure. We have also characterised the detection capabilities of bulk semi-insulating SiC for alpha radiation. By measuring ...

  10. Saturn V Stage I (S-IC) Overview

    Science.gov (United States)

    Interbartolo, Michael

    2009-01-01

    Objectives include: a) Become familiar with the Saturn V Stage I (S-IC) major structural components: Forward Skirt, Oxidizer Tank, Intertank, Fuel Tank, and Thrust Structure. b) Gain a general understanding of the Stage I subsystems: Fuel, Oxidizer, Instrumentation, Flight Control, Environmental Control, Electrical, Control Pressure, and Ordinance.

  11. Advanced Capacitor with SiC for High Temperature Applications

    Science.gov (United States)

    Tsao, B. H.; Ramalingam, M. L.; Bhattacharya, R. S.; Carr, Sandra Fries

    1994-07-01

    An advanced capacitor using SiC as the dielectric material has been developed for high temperature, high power, and high density electronic components for aircraft and aerospace application. The conventional capacitor consists of a large number of metallized polysulfone films that are arranged in parallel and enclosed in a sealed metal case. However, problems with electrical failure, thermal failure, and dielectric flow were experienced by Air Force suppliers for the component and subsystem for lack of suitable properties of the dielectric material. The high breakdown electrical field, high thermal conductivity, and high temperature operational resistance of SiC compared to similar properties of the conventional ceramic and polymer capacitor would make it a better choice for a high temperature, and high power capacitor. The quality of the SiC film was evaluated. The electrical parameters, such as the capacitance, dissipation factor, equivalent series resistance, and dielectric withstand voltage, were evaluated. The prototypical capacitors are currently being fabricated using SiC film.

  12. Fission-product SiC reaction in HTGR fuel

    Energy Technology Data Exchange (ETDEWEB)

    Montgomery, F.

    1981-07-13

    The primary barrier to release of fission product from any of the fuel types into the primary circuit of the HTGR are the coatings on the fuel particles. Both pyrolytic carbon and silicon carbide coatings are very effective in retaining fission gases under normal operating conditions. One of the possible performance limitations which has been observed in irradiation tests of TRISO fuel is chemical interaction of the SiC layer with fission products. This reaction reduces the thickness of the SiC layer in TRISO particles and can lead to release of fission products from the particles if the SiC layer is completely penetrated. The experimental section of this report describes the results of work at General Atomic concerning the reaction of fission products with silicon carbide. The discussion section describes data obtained by various laboratories and includes (1) a description of the fission products which have been found to react with SiC; (2) a description of the kinetics of silicon carbide thinning caused by fission product reaction during out-of-pile thermal gradient heating and the application of these kinetics to in-pile irradiation; and (3) a comparison of silicon carbide thinning in LEU and HEU fuels.

  13. First principle identification of SiC monolayer as an efficient catalyst for CO oxidation

    Energy Technology Data Exchange (ETDEWEB)

    Sinthika, S., E-mail: ranjit.t@res.srmuniv.ac.in, E-mail: sinthika90@gmail.com; Thapa, Ranjit, E-mail: ranjit.t@res.srmuniv.ac.in, E-mail: sinthika90@gmail.com [SRM Research Institute, SRM University, Kattankulathur 603203, Tamil Nadu (India); Reddy, C. Prakash [Department of Physics and Nanotechnology, SRM University, Kattankulathur 603203, Tamil Nadu (India)

    2015-06-24

    Using density functional theory, we investigated the electronic properties of SiC monolayer and tested its catalytic activity toward CO oxidation. The planar nature of a SiC monolayer is found to stable and is a high band gap semiconductor. CO interacts physically with SiC surface, whereas O{sub 2} is adsorbed with moderate binding. CO oxidation on SiC monolayer prefers the Eley Rideal mechanism over the Langmuir Hinshelwood mechanism, with an easily surmountable activation barrier during CO{sub 2} formation. Overall metal free SiC monolayer can be used as efficient catalyst for CO oxidation.

  14. Implantation of high concentration noble gases in cubic zirconia and silicon carbide: A contrasted radiation tolerance

    Energy Technology Data Exchange (ETDEWEB)

    Velişa, Gihan, E-mail: gihan@tandem.nipne.ro [Horia Hulubei National Institute for Physics and Nuclear Engineering, P.O.B. MG-6, 077125 Magurele (Romania); Debelle, Aurélien; Thomé, Lionel; Mylonas, Stamatis [Centre de Sciences Nucléaires et de Sciences de la Matière, CNRS-IN2P3-Université Paris-Sud, Bât. 108, F-91405 Orsay (France); Vincent, Laetitia [Centre de Sciences Nucléaires et de Sciences de la Matière, CNRS-IN2P3-Université Paris-Sud, Bât. 108, F-91405 Orsay (France); Institut d’Electronique Fondamentale, Université Paris-Sud, UMR 8622, Bât. 220, 91405 Orsay (France); Boulle, Alexandre [Science des Procédés Céramiques et de Traitements de Surface, CNRS UMR 7315, Centre Européen de la Céramique, 12 rue Atlantis, 87068 Limoges (France); Jagielski, Jacek [Institute for Electronic Materials Technology, Wolczynska 133, 01-919 Warsaw (Poland); National Center for Nuclear Research, PL-05-400 Swierk/Otwock (Poland); Pantelica, Dan [Horia Hulubei National Institute for Physics and Nuclear Engineering, P.O.B. MG-6, 077125 Magurele (Romania)

    2014-08-01

    The modifications of the microstructure of yttria-stabilized cubic zirconia and silicon carbide single crystals implanted with high concentrations of noble gas ions and subsequently annealed at high temperature were characterized using RBS/C, XRD and TEM. It is found that the annealing behavior is strongly dependent on both the material and the implanted noble gases. Ar-implanted yttria-stabilized zirconia shows no significant microstructural modification upon annealing at 800 °C, e.g. dislocations are still present and the size of the Ar bubbles does not evolve. This is in strong contrast with previous observations on helium-implanted zirconia, where the formation of bubbles and elongated fractures were observed. In the case of SiC, thermal annealing at 1000 °C shows an enhanced damage recovery when He is implanted as compared to Ar implantation and the recrystallization of the matrix is accompanied with the release of noble gas atoms. This difference can be ascribed to different atomic radii, and thus mobility of implanted species.

  15. Si3N4/SiC nanocomposite powder from a preceramic polymeric network based on poly(methylsilane as the SiC precursor

    Directory of Open Access Journals (Sweden)

    Maurício F. Gozzi

    2001-01-01

    Full Text Available Si3N4/SiC nanocomposite powders were obtained from a preceramic polymeric network based on poly(methylsilane as the in situ quasi-stoichiometric SiC source. These powders were constituted of nanosized SiC particles homogeneously distributed in the Si3N4 particulate matrix. beta-SiC whiskers were grown at 1400 °C in the pores of the matrix. At 1600 °C, the alpha -> beta Si3N4 phase transition took place, but no elemental silicon from Si3N4 decomposition was detected, evidencing the protective effect of the SiC phase.

  16. PhySIC: a veto supertree method with desirable properties.

    Science.gov (United States)

    Ranwez, Vincent; Berry, Vincent; Criscuolo, Alexis; Fabre, Pierre-Henri; Guillemot, Sylvain; Scornavacca, Celine; Douzery, Emmanuel J P

    2007-10-01

    This paper focuses on veto supertree methods; i.e., methods that aim at producing a conservative synthesis of the relationships agreed upon by all source trees. We propose desirable properties that a supertree should satisfy in this framework, namely the non-contradiction property (PC) and the induction property (PI). The former requires that the supertree does not contain relationships that contradict one or a combination of the source topologies, whereas the latter requires that all topological information contained in the supertree is present in a source tree or collectively induced by several source trees. We provide simple examples to illustrate their relevance and that allow a comparison with previously advocated properties. We show that these properties can be checked in polynomial time for any given rooted supertree. Moreover, we introduce the PhySIC method (PHYlogenetic Signal with Induction and non-Contradiction). For k input trees spanning a set of n taxa, this method produces a supertree that satisfies the above-mentioned properties in O(kn(3) + n(4)) computing time. The polytomies of the produced supertree are also tagged by labels indicating areas of conflict as well as those with insufficient overlap. As a whole, PhySIC enables the user to quickly summarize consensual information of a set of trees and localize groups of taxa for which the data require consolidation. Lastly, we illustrate the behaviour of PhySIC on primate data sets of various sizes, and propose a supertree covering 95% of all primate extant genera. The PhySIC algorithm is available at http://atgc.lirmm.fr/cgi-bin/PhySIC.

  17. Effects of surface oxide species and contents on SiC slurry viscosity

    Institute of Scientific and Technical Information of China (English)

    NING Shufan; LI Hongyan; CHEN Wei; LIU Bin; CHEN Shoutian

    2005-01-01

    The disadvantageous effects of colloidal SiO2 layer and micro-content of metal oxide adsorbed on SiC powder surface on SiC slurry stable dispersion were studied, and the novel method to avoid this disadvantage was proposed. By acidwashing, on the one hand, because the maximum Zeta potential of SiC powder increases to 72.49 mV with the decreasing content of metal oxide adsorbed on the SiC powder surface, the repulsion force between SiC powders that dispersed in slurry is enhanced, thus the SiC powder can be fully dispersed in slurry. On the other hand, after HF acidwashing, with the OH- group adsorbed on SiC powder surface destroyed and replaced by the F- ion, the hydrogen bond adsorbed on the OH-group is also destroyed. Therefore, the surface property of the SiC powder is changed from hydrophilic to hydrophobic;H2O that adsorbed on SiC powder surface is released and can flow freely, and it actually increases the content of the effective flow phase in the slurry. These changes of SiC powder surface property can be proved by XPS and FTIR analysis. Fivolume fraction of SiC powder in the slurry is maximized to 61.5 vol.%.

  18. Growth of boron doped hydrogenated nanocrystalline cubic silicon carbide (3C-SiC) films by Hot Wire-CVD

    Energy Technology Data Exchange (ETDEWEB)

    Pawbake, Amit [School of Energy Studies, Savitribai Phule Pune University, Pune 411 007 (India); Tata Institute of Fundamental Research, Colaba, Mumbai 400 005 (India); Mayabadi, Azam; Waykar, Ravindra; Kulkarni, Rupali; Jadhavar, Ashok [School of Energy Studies, Savitribai Phule Pune University, Pune 411 007 (India); Waman, Vaishali [Modern College of Arts, Science and Commerce, Shivajinagar, Pune 411 005 (India); Parmar, Jayesh [Tata Institute of Fundamental Research, Colaba, Mumbai 400 005 (India); Bhattacharyya, Somnath [Department of Metallurgical and Materials Engineering, IIT Madras, Chennai 600 036 (India); Ma, Yuan‐Ron [Department of Physics, National Dong Hwa University, Hualien 97401, Taiwan (China); Devan, Rupesh; Pathan, Habib [Department of Physics, Savitribai Phule Pune University, Pune 411007 (India); Jadkar, Sandesh, E-mail: sandesh@physics.unipune.ac.in [Department of Physics, Savitribai Phule Pune University, Pune 411007 (India)

    2016-04-15

    Highlights: • Boron doped nc-3C-SiC films prepared by HW-CVD using SiH{sub 4}/CH{sub 4}/B{sub 2}H{sub 6}. • 3C-Si-C films have preferred orientation in (1 1 1) direction. • Introduction of boron into SiC matrix retard the crystallanity in the film structure. • Film large number of SiC nanocrystallites embedded in the a-Si matrix. • Band gap values, E{sub Tauc} and E{sub 04} (E{sub 04} > E{sub Tauc}) decreases with increase in B{sub 2}H{sub 6} flow rate. - Abstract: Boron doped nanocrystalline cubic silicon carbide (3C-SiC) films have been prepared by HW-CVD using silane (SiH{sub 4})/methane (CH{sub 4})/diborane (B{sub 2}H{sub 6}) gas mixture. The influence of boron doping on structural, optical, morphological and electrical properties have been investigated. The formation of 3C-SiC films have been confirmed by low angle XRD, Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), Fourier transform infra-red (FTIR) spectroscopy and high resolution-transmission electron microscopy (HR-TEM) analysis whereas effective boron doping in nc-3C-SiC have been confirmed by conductivity, charge carrier activation energy, and Hall measurements. Raman spectroscopy and HR-TEM analysis revealed that introduction of boron into the SiC matrix retards the crystallanity in the film structure. The field emission scanning electron microscopy (FE-SEM) and non contact atomic force microscopy (NC-AFM) results signify that 3C-SiC film contain well resolved, large number of silicon carbide (SiC) nanocrystallites embedded in the a-Si matrix having rms surface roughness ∼1.64 nm. Hydrogen content in doped films are found smaller than that of un-doped films. Optical band gap values, E{sub Tauc} and E{sub 04} decreases with increase in B{sub 2}H{sub 6} flow rate.

  19. Crack Propagation Behaviors of Multi-Layered SiC Composite Tubes

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Daejong; Lee, Donghee; Lee, Hyeon-Geun; Park, Ji Yeon; Kim, Weon-Ju [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

    2015-10-15

    SiC composite cladding has various advantages compared to current Zr alloy cladding in terms of accident resistance and neutron economy. However, its brittle properties and corresponding low reliability make it difficult for a use of SiC ceramics as cladding materials. In this study, fracture behaviors of several SiC composite cladding tubes, particularly crack propagation behavior were evaluated using an acoustic emission method. AE analysis is a useful tool for examination of the multi-layered SiC composite with complex structure which provides information of crack propagation. Failure of an inner monolith SiC in the triplex SiC composite tube will cause significant problems such as hermeticity, degradation of SiC{sub f}/SiC. Duplex SiC composite might be the alternative.

  20. Preparation and mechanical properties of SiC/2024 composite by semisolid casting

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    A SiC/2024 composite was made by semisolid casting. The wetting between SiC and Al matrix is improved by treating SiC particles at a high temperature, coating K2ZrF6, and adding Mg to the Al melt. An effective way to remove the gas around SiC particles was also found. Microsturctures were observed under optical microscope (OM) and scanning electron microscopy (SEM). The results show that SiC particles and Al matrix are well bonded and no gaps or cavities around the particles are observed. SiC particles distribute homogeneously in the Al matrix. The existence of SiC particles results in the increase of wear resistance and strength.

  1. Cubic silicon carbide and boron nitride as possible primary pressure calibrants for high pressure and temperature scale

    Science.gov (United States)

    Zhuravlev, K. K.; Goncharov, A. F.; Tkachev, S. N.; Prakapenka, V.

    2010-12-01

    K. K. Zhuravlev, A. F. Goncharov Geophysical Laboratory, Carnegie Institution of Washington, 5251 Broad Branch Road NW, Washington DC, 20015 V. Prakapenka, S. N. Tkachev CARS, the University of Chicago, Bldg. 434A, Argonne National Laboratory, 9700 S. Cass. Ave., Argonne, IL 60439 Abstract Since its introduction, ruby-based pressure scale (Mao et al., 1986) has been the most commonly used by the high-pressure scientific community. However, it has limited use at elevated temperatures, due to the weakening and broadening of the ruby fluorescence line. The recent developments in the field of high temperature, high pressure physics and geophysics require some alternative pressure scale, which will be capable of measuring pressures at temperatures up to 3000 K. Cubic boron nitride (cBN) was recently (Goncharov et al., 2005) proposed as the possible pressure calibrant. It has been suggested that the simultaneous use of x-ray diffraction to measure density and Brillouin spectroscopy to obtain elastic properties of the crystal can be used to construct the pressure scale independent of any other pressure standards, i.e. cBN can be a primary pressure calibrant. However, the acoustic velocities of cBN are very close to those of diamond and, therefore, are hard to resolve in experiment at high pressures in diamond-anvil cell. Another possible primary pressure calibrant is cubic silicon carbide (SiC-3C). Its density and elastic parameters are quite different from the diamond ones and it is stable over the broad range of temperatures and pressures (up to 1 Mbar). SiC-3C is transparent and allows the use of Brillouin spectroscopy. Additionally, SiC-3C has two strong Raman lines, which can be used for the optical in situ pressure measurements. We report our experimental data on both cBN and SiC-3C and show that they, indeed, can be used in constructing reliable and accurate high-pressure, high-temperature scale. We performed single crystal x-ray diffraction and Brillouin

  2. LOW ACTIVATION JOINING OF SIC/SIC COMPOSITES FOR FUSION APPLICATIONS: MODELING DUAL-PHASE MICROSTRUCTURES AND DISSIMILAR MATERIAL JOINTS

    Energy Technology Data Exchange (ETDEWEB)

    Henager, Charles H.; Nguyen, Ba Nghiep; Kurtz, Richard J.; Ferraris, M.; Katoh, Y.

    2016-03-31

    Finite element continuum damage models (FE-CDM) have been developed to simulate and model dual-phase joints and cracked joints for improved analysis of SiC materials in nuclear environments. This report extends the analysis from the last reporting cycle by including results from dual-phase models and from cracked joint models.

  3. Synthesis of whiskers of SiC microwave assisted; Sintesis de whiskers de SiC asistida por microondas

    Energy Technology Data Exchange (ETDEWEB)

    Garza-Mendez, F. J.; Vanegas, A. J.; Vazquez, B. A.; Garza-Paz, J.

    2013-06-01

    We developed a new process for the synthesis of SiC whiskers assisted by microwaves; this is based on the mixture of silica xerogels and graphite powder. As energy source were used microwaves of 2.45 GHz and 1.0 kW of power RMS. On the other hand, mesoporous silica was synthesized via sol-gel, the precursors used were TEOS/H{sub 2}O and ethanol. Through analysis of the BET is determined the value of average pore size (3.0 nm) and the surface area (1090 m2/g).By mean of X-Ray diffraction it was demonstrated that the silica obtained is an amorphous solid and, the powders obtained in the microwave synthesis are {beta}-SiC. Synthesized SiC powders were observed using a SEM in secondary electron mode, it was observed that this powders consists of SiC whiskers. The effect of microwaves on the synthesis of whiskers of SiC is discussed in the present work. (Author) 19 refs.

  4. CRACK PROBLEM UNDER SHEAR LOADING IN CUBIC QUASICRYSTAL

    Institute of Scientific and Technical Information of China (English)

    周旺民; 范天佑; 尹姝媛

    2003-01-01

    The axisymmetric elasticity problem of cubic quasicrystal is reduced to a single higher-order partial differential equation by introducing a displacement function. Based on the work, the analytic solutions of elastic field of cubic quasicrystal with a penny-shaped crack under the shear loading are found, and the stress intensity factor and strain energy release rate are determined.

  5. Cubic Polynomials with Real or Complex Coefficients: The Full Picture

    Science.gov (United States)

    Bardell, Nicholas S.

    2016-01-01

    The cubic polynomial with real coefficients has a rich and interesting history primarily associated with the endeavours of great mathematicians like del Ferro, Tartaglia, Cardano or Vieta who sought a solution for the roots (Katz, 1998; see Chapter 12.3: The Solution of the Cubic Equation). Suffice it to say that since the times of renaissance…

  6. An application of Cubical Cohomology to Adinkras and Supersymmetry Representations

    CERN Document Server

    Doran, Charles; Landweber, Greg

    2012-01-01

    An Adinkra is a class of graphs with certain signs marking its vertices and edges, which encodes off-shell representations of the super Poincar\\'e algebra. The markings on the vertices and edges of an Adinkra are cochains for cubical cohomology. This article explores the cubical cohomology of Adinkras, treating these markings analogously to characteristic classes on smooth manifolds.

  7. Rational Cubics and Conics Representation: A Practical Approach

    Directory of Open Access Journals (Sweden)

    M. Sarfraz

    2012-08-01

    Full Text Available A rational cubic spline, with one family of shape parameters, has been discussed with the view to its application in Computer Graphics. It incorporates both conic sections and parametric cubic curves as special cases. The parameters (weights, in the description of the spline curve can be used to modify the shape of the curve, locally and globally, at the knot intervals. The rational cubic spline attains parametric   smoothness whereas the stitching of the conic segments preserves visually reasonable smoothness at the neighboring knots. The curve scheme is interpolatory and can plot parabolic, hyperbolic, elliptic, and circular splines independently as well as bits and pieces of a rational cubic spline.Key Words: Computer Graphics, Interpolation, Spline, Conic, Rational Cubic

  8. On cubic equations over $P-$adic field

    CERN Document Server

    Mukhamedov, Farrukh; Saburov, Mansoor

    2012-01-01

    We provide a solvability criteria for a depressed cubic equation in domains $\\bz_p^{*},\\bz_p,\\bq_p$. We show that, in principal, the Cardano method is not always applicable for such equations. Moreover, the numbers of solutions of the depressed cubic equation in domains $\\bz_p^{*},\\bz_p,\\bq_p$ are provided. Since $\\bbf_p\\subset\\bq_p,$ we generalize J.-P. Serre's \\cite{JPSJ} and Z.H.Sun's \\cite{ZHS1,ZHS3} results concerning with depressed cubic equations over the finite field $\\bbf_p$. Finally, all depressed cubic equations, for which the Cardano method could be applied, are described and the $p-$adic Cardano formula is provided for those cubic equations.

  9. The Body Center Cubic Quark Lattice Model

    CERN Document Server

    Lin Xu, Jiao

    2004-01-01

    The Standard Model while successful in many ways is incomplete; many questions remain. The origin of quark masses and hadronization of quarks are awaiting an answer. From the Dirac sea concept, we infer that two kinds of elementary quarks (u(0) and d(0)) constitute a body center cubic (BCC) quark lattice with a lattice constant a < $10^{-18}$m in the vacuum. Using energy band theory and the BCC quark lattice, we can deduce the rest masses and the intrinsic quantum numbers (I, S, C, b and Q) of quarks. With the quark spectrum, we deduce a baryon spectrum. The theoretical spectrum is in agreement well with the experimental results. Not only will this paper provide a physical basis for the Quark Model, but also it will open a door to study the more fundamental nature at distance scales <$10^{-18}$m. This paper predicts some new quarks $u_{c}$(6490) and d$_{b}$(9950), and new baryons $\\Lambda_{c}^{+}$(6500), $\\Lambda_{b}^{0}$(9960).

  10. Pd/CeO2/SiC Chemical Sensors

    Science.gov (United States)

    Lu, Weijie; Collins, W. Eugene

    2005-01-01

    The incorporation of nanostructured interfacial layers of CeO2 has been proposed to enhance the performances of Pd/SiC Schottky diodes used to sense hydrogen and hydrocarbons at high temperatures. If successful, this development could prove beneficial in numerous applications in which there are requirements to sense hydrogen and hydrocarbons at high temperatures: examples include monitoring of exhaust gases from engines and detecting fires. Sensitivity and thermal stability are major considerations affecting the development of high-temperature chemical sensors. In the case of a metal/SiC Schottky diode for a number of metals, the SiC becomes more chemically active in the presence of the thin metal film on the SiC surface at high temperature. This increase in chemical reactivity causes changes in chemical composition and structure of the metal/SiC interface. The practical effect of the changes is to alter the electronic and other properties of the device in such a manner as to degrade its performance as a chemical sensor. To delay or prevent these changes, it is necessary to limit operation to a temperature CeO2 films is based partly on the observation that nanostructured materials in general have potentially useful electrical properties, including an ability to enhance the transfer of electrons. In particular, nanostructured CeO2, that is CeO2 with nanosized grains, has shown promise for incorporation into hightemperature electronic devices. Nanostructured CeO2 films can be formed on SiC and have been shown to exhibit high thermal stability on SiC, characterized by the ability to withstand temperatures somewhat greater than 700 C for limited times. The exchanges of oxygen between CeO2 and SiC prevent the formation of carbon and other chemical species that are unfavorable for operation of a SiC-based Schottky diode as a chemical sensor. Consequently, it is anticipated that in a Pd/CeO2/SiC Schottky diode, the nanostructured interfacial CeO2 layer would contribute to

  11. Astrocyte-Dependent Slow Inward Currents (SICs) Participate in Neuromodulatory Mechanisms in the Pedunculopontine Nucleus (PPN)

    Science.gov (United States)

    Kovács, Adrienn; Pál, Balázs

    2017-01-01

    Slow inward currents (SICs) are known as excitatory events of neurons caused by astrocytic glutamate release and consequential activation of neuronal extrasynaptic NMDA receptors. In the present article we investigate the role of these astrocyte-dependent excitatory events on a cholinergic nucleus of the reticular activating system (RAS), the pedunculopontine nucleus (PPN). It is well known about this and other elements of the RAS, that they do not only give rise to neuromodulatory innervation of several areas, but also targets neuromodulatory actions from other members of the RAS or factors providing the homeostatic drive for sleep. Using slice electrophysiology, optogenetics and morphological reconstruction, we revealed that SICs are present in a population of PPN neurons. The frequency of SICs recorded on PPN neurons was higher when the soma of the given neuron was close to an astrocytic soma. SICs do not appear simultaneously on neighboring neurons, thus it is unlikely that they synchronize neuronal activity in this structure. Occurrence of SICs is regulated by cannabinoid, muscarinic and serotonergic neuromodulatory mechanisms. In most cases, SICs occurred independently from tonic neuronal currents. SICs were affected by different neuromodulatory agents in a rather uniform way: if control SIC activity was low, the applied drugs increased it, but if SIC activity was increased in control, the same drugs lowered it. SICs of PPN neurons possibly represent a mechanism which elicits network-independent spikes on certain PPN neurons; forming an alternative, astrocyte-dependent pathway of neuromodulatory mechanisms. PMID:28203147

  12. Effects of SiC on Properties of Cu-SiC Metal Matrix Composites

    Science.gov (United States)

    Efe, G. Celebi; Altinsoy, I.; Ipek, M.; Zeytin, S.; Bindal, C.

    2011-12-01

    This paper was focused on the effects of particle size and distribution on some properties of the SiC particle reinforced Cu composites. Copper powder produced by cementation method was reinforced with SiC particles having 1 and 30 μm particle size and sintered at 700 °C. SEM studies showed that SiC particles dispersed in copper matrix homogenously. The presence of Cu and SiC components in composites were verified by XRD analysis technique. The relative densities of Cu-SiC composites determined by Archimedes' principle are ranged from 96.2% to 90.9% for SiC with 1 μm particle size, 97.0 to 95.0 for SiC with 30 μm particle size. Measured hardness of sintered compacts varied from 130 to 155 HVN for SiC having 1 μm particle size, 188 to 229 HVN for SiC having 1 μm particle size. Maximum electrical conductivity of test materials was obtained as 80.0% IACS (International annealed copper standard) for SiC with 1 μm particle size and 83.0% IACS for SiC with 30 μm particle size.

  13. Creep behavior for advanced polycrystalline SiC fibers

    Energy Technology Data Exchange (ETDEWEB)

    Youngblood, G.E.; Jones, R.H. [Pacific Northwest National Lab., Richland, WA (United States); Kohyama, Akira [Kyoto Univ. (Japan)] [and others

    1997-04-01

    A bend stress relaxation (BSR) test has been utilized to examine irradiation enhanced creep in polycrystalline SiC fibers which are under development for use as fiber reinforcement in SiC/SiC composite. Qualitative, S-shaped 1hr BSR curves were compared for three selected advanced SiC fiber types and standard Nicalon CG fiber. The temperature corresponding to the middle of the S-curve (where the BSR parameter m = 0.5) is a measure of a fiber`s thermal stability as well as it creep resistance. In order of decreasing thermal creep resistance, the measured transition temperatures were Nicalon S (1450{degrees}C), Sylramic (1420{degrees}C), Hi-Nicalon (1230{degrees}C) and Nicalon CG (1110{degrees}C).

  14. POWDER INJECTION MOLDING OF SIC FOR THERMAL MANAGEMENT V

    Directory of Open Access Journals (Sweden)

    Valmikanathan Onbattuvelli

    2012-06-01

    Full Text Available Silicon carbide (SiC exhibits many functional properties that are relevant to applications in electronics, aerospace, defense and automotive industries. However, the successful translation of these properties into final applications lies in the net-shaping of ceramics into fully dense microstructures. Increasing the packing density of the starting powders is one effective route to achieve high sintered density and dimensional precision. The present paper presents an in-depth study on the effects of nanoparticle addition on the powder injection molding process (PIM of SiC powder-polymer mixtures. In particular, bimodal mixtures of nanoscale and sub-micrometer particles are found to have significantly increased powder packing characteristics (solids loading in the powder-polymer mixtures. The influence of nanoparticle addition on the multi-step PIM process is examined. The above results provide new perspectives which could impact a wide range of materials, powder processing techniques and applications.

  15. Surface engineering of SiC via sublimation etching

    Science.gov (United States)

    Jokubavicius, Valdas; Yazdi, Gholam R.; Ivanov, Ivan G.; Niu, Yuran; Zakharov, Alexei; Iakimov, Tihomir; Syväjärvi, Mikael; Yakimova, Rositsa

    2016-12-01

    We present a technique for etching of SiC which is based on sublimation and can be used to modify the morphology and reconstruction of silicon carbide surface for subsequent epitaxial growth of various materials, for example graphene. The sublimation etching of 6H-, 4H- and 3C-SiC was explored in vacuum (10-5 mbar) and Ar (700 mbar) ambient using two different etching arrangements which can be considered as Si-C and Si-C-Ta chemical systems exhibiting different vapor phase stoichiometry at a given temperature. The surfaces of different polytypes etched under similar conditions are compared and the etching mechanism is discussed with an emphasis on the role of tantalum as a carbon getter. To demonstrate applicability of such etching process graphene nanoribbons were grown on a 4H-SiC surface that was pre-patterned using the thermal etching technique presented in this study.

  16. Nucleation and growth of polycrystalline SiC

    DEFF Research Database (Denmark)

    Kaiser, M.; Schimmel, S.; Jokubavicius, V.

    2014-01-01

    R polytypes. It is found that pyrolytic graphite results in enhanced texturing of the nucleating gas species. Reducing the pressure leads to growth of the crystallites until a closed polycrystalline SiC layer containing voids with a rough surface is developed. Bulk growth was conducted at 35 mbar Ar...... pressure at 2250°C in diffusion limited mass transport regime generating a convex shaped growth form of the solid-gas interface leading to lateral expansion of virtually [001] oriented crystallites. Growth at 2350°C led to the stabilization of 6H polytypic grains. The micropipe density in the bulk strongly......The nucleation and bulk growth of polycrystalline SiC in a 2 inch PVT setup using isostatic and pyrolytic graphite as substrates was studied. Textured nucleation occurs under near-thermal equilibrium conditions at the initial growth stage with hexagonal platelet shaped crystallites of 4H, 6H and 15...

  17. Progress of d0 magnetism in SiC

    Science.gov (United States)

    Wang, Yutian; Liu, Chenguang; Zhang, Yuming

    2017-03-01

    The properties of defect-induced ferromagnetism ({{{d}}}0 magnetism) in SiC belong to carbon-based material which has been systematically investigated after graphite. In this paper, we reviewed our research progress about {{{d}}}0 magnetism in two aspects, i.e., magnetic source and magnetic coupling mechanism. The {{{V}}}{{Si}} {{{V}}}{{C}} divacancies have been evidenced as the probable source of {{{d}}}0 magnetism in SiC. To trace the ferromagnetic source in microscopic and electronic view, the p electrons of the nearest-neighbor carbon atoms, which are around the {{{V}}}{{Si}} {{{V}}}{{C}} divacancies, are sourced. For magnetic coupling mechanism, a higher divacancy concentration leads to stronger paramagnetic interaction but not stronger ferromagnetic coupling. So the {{{d}}}0 magnetism can probably be explained as a local effect which is incapable of scaling up with the volume.

  18. Excited States of the divacancy in SiC

    Science.gov (United States)

    Bockstedte, Michel; Garratt, Thomas; Ivady, Viktor; Gali, Adam

    2014-03-01

    The divacancy in SiC - a technologically mature material that fulfills the necessary requirements for hosting defect based quantum computing - is a good candidate for implementing a solid state quantum bit. Its ground state is isovalent to the NV center in diamond as demonstrated by density functional theory (DFT). Furthermore, coherent manipulation of divacancy spins in SiC has been demonstrated. The similarities to NV might indicate that the same inter system crossing (ICS) from the high to the low spin state is responsible for its spin-dependent fluorescent signal. By DFT and a DFT-based multi-reference hamiltonian we analyze the excited state spectrum of the defects. In contrast to the current picture of the spin dynamics of the NV center, we predict that a static Jahn-Teller effect in the first excited triplet states governs an ICS both with the excited and ground state of the divacancy.

  19. Cubic B-spline curve approximation by curve unclamping

    OpenAIRE

    Chen, Xiao-Diao; Ma, Weiyin; Paul, Jean-Claude

    2010-01-01

    International audience; A new approach for cubic B-spline curve approximation is presented. The method produces an approximation cubic B-spline curve tangent to a given curve at a set of selected positions, called tangent points, in a piecewise manner starting from a seed segment. A heuristic method is provided to select the tangent points. The first segment of the approximation cubic B-spline curve can be obtained using an inner point interpolation method, least-squares method or geometric H...

  20. On q-power cycles in cubic graphs

    DEFF Research Database (Denmark)

    Bensmail, Julien

    2017-01-01

    In the context of a conjecture of Erdos and Gyárfás, we consider, for any q ≥ 2, the existence of q-power cycles (i.e. with length a power of q) in cubic graphs. We exhibit constructions showing that, for every q ≥ 3, there exist arbitrarily large cubic graphs with no q-power cycles. Concerning...... the remaining case q = 2 (which corresponds to the conjecture of Erdos and Gyárfás), we show that there exist arbitrarily large cubic graphs whose only 2-power cycles have length 4 only, or 8 only....

  1. On q-power cycles in cubic graphs

    DEFF Research Database (Denmark)

    Bensmail, Julien

    2016-01-01

    In the context of a conjecture of Erdos and Gyárfás, we consider, for any q ≥ 2, the existence of q-power cycles (i.e. with length a power of q) in cubic graphs. We exhibit constructions showing that, for every q ≥ 3, there exist arbitrarily large cubic graphs with no q-power cycles. Concerning...... the remaining case q = 2 (which corresponds to the conjecture of Erdos and Gyárfás), we show that there exist arbitrarily large cubic graphs whose only 2-power cycles have length 4 only, or 8 only....

  2. Evaluation of SiC schottky diodes using pressure contacts

    OpenAIRE

    Ortiz Gonzalez, Jose; Alatise, Olayiwola; Aliyu, Attahir; Rajaguru, Pushparajah; Castellazzi, Alberto; Ran, Li; Mawby, Philip; Bailey, Chris

    2017-01-01

    The thermomechanical reliability of SiC power devices and modules is increasingly becoming of interest especially for high power applications where power cycling performance is critical. Press-pack assemblies are a trusted and reliable packaging solution that has traditionally been used for high power thyristor- based applications in FACTS/HVDC, although press-pack IGBTs have become commercially available more recently. These press-pack IGBTs require anti-parallel PiN diodes for enabling reve...

  3. The compressibility of cubic white and orthorhombic, rhombohedral, and simple cubic black phosphorus

    Energy Technology Data Exchange (ETDEWEB)

    Clark, Simon M; Zaug, Joseph

    2010-03-10

    The effect of pressure on the crystal structure of white phosphorus has been studied up to 22.4 GPa. The ?alpha phase was found to transform into the alpha' phase at 0.87 +- 0.04 GPa with a volume change of 0.1 +- 0.3 cc/mol. A fit of a second order Birch- Murnaghan equation to the data gave Vo = 16.94 ? 0.08 cc/mol and Ko = 6.7 +- 0.5 GPa for the alpha phase and Vo = 16.4 +- 0.1 cc/mol and Ko = 9.1 +- 0.3 GPa for the alpha' phase. The alpha' phase was found to transform to the A17 phase of black phosphorus at 2.68 +- 0.34 GPa and then with increasing pressure to the A7 and then simple cubic phase of black phosphorus. A fit of a second order Birch-Murnaghan equation to our data combined with previous measurements gave Vo = 11.43 +- 0.05 cc/mol and Ko = 34.7 +- 0.5 GPa for the A17 phase, Vo = 9.62 +- 0.01 cc/mol and Ko = 65.0 +- 0.6 GPa for the A7 phase and , Vo = 9.23 +- 0.01 cc/mol and Ko = 72.5 +- 0.3 GPa for the simple cubic phase.

  4. Acoustic Response of Laminated SiC Ceramics

    Science.gov (United States)

    Esquivel-Sirvent, Raul; Noguez, Cecilia

    1996-03-01

    We present a theoretical calculation of the reflectivity of compressional elastic waves propagating through a laminated structure made of alternate layers of SiC and porous SiC. During fabrication, defects like variation of the period of the structure or variations in the porosity, can be present. By calculating the reflectivity spectra, we can assess the feasibility of using acoustic measuring techniques to characterize these laminated structures. Our results show that, for an ordered structure where the period and porosity of the laminated structure is constant, the reflectivity spectra starts showing the characteristic band structure of waves propagating in infinite superlattices. To simulate fabrication defects, first the period of the structure is changed by randomly varing the thickness of the porous layers. The reflectivity shows that variations in the period induce strong changes in the reflectivity spectra (i.e transmission is enhanced). In comparison, when the period remains constant and the porosity of the SiC porous layers is varied randomly, we observe that even when the porosity changes randomly by up to 50%, the reflectivity spectra does not show significant changes. Finally the case when both period and porosity are varied and when one of the porous layers is missing from the structure will also be discussed.

  5. Atmospheric pressure growth of graphene on SiC(0001)

    Science.gov (United States)

    Seyller, Thomas

    2009-03-01

    Graphene, a single monolayer of sp^2-bonded carbon, is a very unique 2-dimensional electron gas system with electronic properties fundamentally different to other 2DEG systems [1]. Several production routes exist for graphene. Among them, the solid-state decomposition of hexagonal silicon carbide (SiC) surfaces [2] is particularly attractive for the development of graphene based electronics [3,4]. The first part of the presentation gives a brief summary of recent studies on the structural and electronic properties of graphene and few-layer graphene grown on SiC(0001) under ultra-high vacuum (UHV) conditions. The second part of the talk is devoted to recent progress in the growth of large domain graphene films on SiC(0001) in Ar atmosphere. It is shown that growth in Ar ambient leads to a significant improvement of the surface morphology and domain size as well as carrier mobility. [4pt] [1] A.H. Castro Neto, et al., Reviews of Modern Physics, in print (arXiv:0709.1163v2); and references therein. [0pt] [2] A. Charrier, et al., J. Appl. Phys. 92 (2002) 2479. [0pt] [3] C. Berger et al., J. Phys. Chem. B 108 (2004) 19912; C. Berger, et al., Science 312 (2006) 1191. [0pt] [4] A.K. Geim and K.S. Novoselov, Nature Mat. 6 (2007) 183.

  6. A study of SiC decomposition under laser irradiation

    Science.gov (United States)

    Adelmann, B.; Hellmann, R.

    2017-06-01

    In this experimental study we investigate the laser induced thermal decomposition of 4H-Sic under ambient conditions using fiber laser. Using a unique two-color pyrometer setup, we measure the temporal evolution of the temperature in the irradiated zone and determine the decomposition rate for various laser power levels. We find that the temporal evolution of the temperature in the irradiated area exhibits an initial heating phase up to about 1300 K, being characterized by an unaffected SiC surface. Upon an expeditious temperature increase, a decomposition phase follows with temperatures above 1700 K, being accompanied by carbonization of the SiC surface. The decomposed volume depends linearly on the duration of the decomposition phase and increases linearly with laser power. The temperature evaluation of the decomposition speed reveals an Arrhenius-type behavior allowing the calculation of the activation energy for the decomposition under ambient conditions to 613 kJ/mol in the temperature range between 2140 and 2420 K.

  7. Low-energy SiC2H6+ and SiC3H9+ ion beam productions by the mass-selection of fragments produced from hexamethyldisilane for SiC film formations

    Directory of Open Access Journals (Sweden)

    Satoru Yoshimura

    2016-12-01

    Full Text Available We have been attempting to produce low-energy ion beams from fragments produced through the decomposition of hexamethyldisilane (HMD for silicon carbide (SiC film formations. We mass-selected SiC2H6+ and SiC3H9+ ions from fragments produced from HMD, and finally produced low-energy SiC2H6+ and SiC3H9+ ion beams. The ion energy was approximately 100 eV. Then, the ion beams were irradiated to Si(100 substrates. The temperature of the Si substrate was 800°C during the ion irradiation. The X-ray diffraction and Raman spectroscopy of the substrates obtained following SiC2H6+ ion irradiation demonstrated the occurrence of 3C-SiC deposition. On the other hand, the film deposited by the irradiation of SiC3H9+ ions included diamond-like carbon in addition to 3C-SiC.

  8. FTIR-ATR analysis of SiC(000 anti 1) and SiC(0001) surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Tsuchida, H.; Kamata, I.; Izumi, K. [Central Research Inst. of Electric Power Industry, Yokosuka (Japan)

    1998-06-01

    Recently developed SiC wafers with large diameter have been utilized to investigate the chemical state of the SiC surfaces by Fourier-transformed infrared attenuated total reflection (FTIR-ATR) spectroscopy with high sensitivity. The ex-situ ATR spectroscopy equipped with a Ge prism was used to study the chemisorbed species on 6H-SiC(000 anti 1) and (0001) surface after the chemical treatment and after the heat treatment in hydrogen. We obtained clear absorption bands attributable to hydrides on the surfaces. The polarity dependencies of Si-H and C-H stretch modes between the 6H-SiC(000 anti 1) and (0001) were discussed. (orig.) 10 refs.

  9. Adsorption of formaldehyde (HCOH) molecule on the SiC sheet: A first-principles study

    Science.gov (United States)

    Wang, Lizhi

    2012-06-01

    We investigated the adsorption of HCOH molecule on the SiC sheet using density functional theory (DFT) calculations. It is found that the C atom of the SiC sheet is the active adsorption site and the HCOH molecule prefers to the C atom rather than the O and H atoms close to the SiC sheet. The calculated charge-transfer, electronic density difference image and the densities of states (DOS) show that the HCOH molecule could be firmly adsorbed by the SiC sheet and the electronic properties of the SiC sheet are affected by the adsorption of HCOH molecule. The SiC sheet would be promising candidate to detect the HCOH gas.

  10. Effect of oxygen content on tensile strength of polymer-derived SiC fibers

    Institute of Scientific and Technical Information of China (English)

    楚增勇; 冯春祥; 宋永才; 王应德; 李效东; 肖加余

    2002-01-01

    Air-curing is usually applied to the polymer-derived SiC fibers and, as a result, oxygen is embedded to the material. An effective relationship between oxygen content of the SiC fibers and mass gain of their precursor fibers was established. Results also showed that oxygen content has a great influence on the mechanical properties and excellent tensile strength is usually obtained at the oxygen content of 12%~13%, similar to the density of SiC fibers. Oxygen content has a positive effect on the ceramic yield, and thus, is good to the density and tensile strength; while, oxygen content is also negative to volume content of SiC phase and crystallization of the SiC fibers, and thus, detrimental to the density and tensile strength. Both of the two effects result in the peak behavior of the tensile strength of SiC fibers.

  11. A Method to Adjust Dielectric Property of SiC Powder in the GHz Range

    Institute of Scientific and Technical Information of China (English)

    Xiaolei Su; Jie Xu; Zhimin Li; Junbo Wang; Xinhai He; Chong Fu; Wancheng Zhou

    2011-01-01

    The SiC powders by Al or N doping have been synthesized by combustion synthesis, using Al powder and NH4Cl powder as the dopants and polytetrafluoroethylene as the chemical activator. Characterization by X-ray diffraction, Raman spectrometer, scanning electron microscopy and energy dispersive spectrometer demonstrates the formation of Al doped SiC, N doped SiC and the Al and N co-doped SiC solid solution powders, respectively. The electric permittivities of prepared powders have been determined in the frequency range of 8.2-12.4 GHz. It indicates that the electric permittivities of the prepared SiC powders have been improved by the pure Al or N doping and decrease by the Al and N co-doping. The paper presents a method to adjust dielectric property of SiC powders in the GHz range.

  12. Global infinite energy solutions for the cubic wave equation

    OpenAIRE

    Burq, N.; L. Thomann; Tzvetkov, N.

    2012-01-01

    International audience; We prove the existence of infinite energy global solutions of the cubic wave equation in dimension greater than 3. The data is a typical element on the support of suitable probability measures.

  13. The Coulombic Lattice Potential of Ionic Compounds: The Cubic Perovskites.

    Science.gov (United States)

    Francisco, E.; And Others

    1988-01-01

    Presents coulombic models representing the particles of a system by point charges interacting through Coulomb's law to explain coulombic lattice potential. Uses rubidium manganese trifluoride as an example of cubic perovskite structure. Discusses the effects on cluster properties. (CW)

  14. Spinning solitons in cubic-quintic nonlinear media

    Indian Academy of Sciences (India)

    Lucian-Cornel Crasovan; Boris A Malomed; Dumitru Mihalache

    2001-11-01

    We review recent theoretical results concerning the existence, stability and unique features of families of bright vortex solitons (doughnuts, or ‘spinning’ solitons) in both conservative and dissipative cubic-quintic nonlinear media.

  15. SEM analysis of ion implanted SiC

    Energy Technology Data Exchange (ETDEWEB)

    Malherbe, Johan B., E-mail: johan.malherbe@up.ac.za [Department of Physics, University of Pretoria, Pretoria 0002 (South Africa); Berg, N.G. van der; Botha, A.J.; Friedland, E.; Hlatshwayo, T.T.; Kuhudzai, R.J. [Department of Physics, University of Pretoria, Pretoria 0002 (South Africa); Wendler, E.; Wesch, W. [Institut für Festkörperphysik, Friedrich-Schiller-Universität, 07743 Jena (Germany); Chakraborty, P. [Saha Institute of Nuclear Physics, 1/AF Bidhannagar, Kolkata 700 064 (India); Silveira, E.F. da [Physics Department, Pontifícia Universidade Católica do Rio de Janeiro, Rio de Janeiro (Brazil)

    2013-11-15

    SiC is a material used in two future energy production technologies, firstly as a photovoltaic layer to harness the UV spectrum in high efficient power solar cells, and secondly as a diffusion barrier material for radioactive fission products in the fuel elements of the next generation of nuclear power plants. For both applications, there is an interest in the implantation of reactive and non-reactive ions into SiC and their effects on the properties of the SiC. In this study 360 keV Ag{sup +}, I{sup +} and Xe{sup +} ions were separately implanted into 6H–SiC and in polycrystalline SiC at various substrate temperatures. The implanted samples were also annealed in vacuum at temperatures ranging from 900 °C to 1600 °C for various times. In recent years, there had been significant advances in scanning electron microscopy (SEM) with the introduction of an in-lens detector combined with field emission electron guns. This allows defects in solids, such as radiation damage created by the implanted ions, to be detected with SEM. Cross-sectional SEM images of 6H–SiC wafers implanted with 360 keV Ag{sup +} ions at room temperature and at 600 °C and then vacuum annealed at different temperatures revealed the implanted layers and their thicknesses. A similar result is shown of 360 keV I{sup +} ions implanted at 600 °C into 6H–SiC and annealed at 1600 °C. The 6H–SiC is not amorphized but remained crystalline when implanting at 600 °C. There are differences in the microstructure of 6H–SiC implanted with silver at the two temperatures as well as with reactive iodine ions. Voids (bubbles) are created in the implanted layers into which the precipitation of silver and iodine can occur after annealing of the samples. The crystallinity of the substrate via implantation temperature caused differences in the distribution and size of the voids. Implantation of xenon ions in polycrystalline SiC at 350 °C does not amorphize the substrate as is the case with room

  16. SiC Optically Modulated Field-Effect Transistor

    Science.gov (United States)

    Tabib-Azar, Massood

    2009-01-01

    An optically modulated field-effect transistor (OFET) based on a silicon carbide junction field-effect transistor (JFET) is under study as, potentially, a prototype of devices that could be useful for detecting ultraviolet light. The SiC OFET is an experimental device that is one of several devices, including commercial and experimental photodiodes, that were initially evaluated as detectors of ultraviolet light from combustion and that could be incorporated into SiC integrated circuits to be designed to function as combustion sensors. The ultraviolet-detection sensitivity of the photodiodes was found to be less than desired, such that it would be necessary to process their outputs using high-gain amplification circuitry. On the other hand, in principle, the function of the OFET could be characterized as a combination of detection and amplification. In effect, its sensitivity could be considerably greater than that of a photodiode, such that the need for amplification external to the photodetector could be reduced or eliminated. The experimental SiC OFET was made by processes similar to JFET-fabrication processes developed at Glenn Research Center. The gate of the OFET is very long, wide, and thin, relative to the gates of typical prior SiC JFETs. Unlike in prior SiC FETs, the gate is almost completely transparent to near-ultraviolet and visible light. More specifically: The OFET includes a p+ gate layer less than 1/4 m thick, through which photons can be transported efficiently to the p+/p body interface. The gate is relatively long and wide (about 0.5 by 0.5 mm), such that holes generated at the body interface form a depletion layer that modulates the conductivity of the channel between the drain and the source. The exact physical mechanism of modulation of conductivity is a subject of continuing research. It is known that injection of minority charge carriers (in this case, holes) at the interface exerts a strong effect on the channel, resulting in amplification

  17. Stress Intensity of Antiplane Conjugate Cracks in Cubic Quasicrystal

    Institute of Scientific and Technical Information of China (English)

    ZHANG Lei

    2008-01-01

    Based on the theory of Muskhelishvili, the general solutions for stress and strain of conjugate cracks in cubic quasicrystal are obtained, with which the stress intensity factors of cubic quasicrystal at crack tips and the stress distribution functions of phonon and phason fields are given. The results show that though phason field is coupled with phonon field by constitutive equations, the stress intensity factors are not coupled with any other factors.

  18. Optical studies of cubic III-nitride structures

    OpenAIRE

    Powell, Ross E L

    2014-01-01

    The properties of cubic nitrides grown by molecular beam epitaxy (MBE) on GaAs (001) have been studied using optical and electrical techniques. The aim of these studies was the improvement of the growth techniques in order to improve the quality of grown nitrides intended for bulk substrate and optoelectronic device applications. We have also characterised hexagonal nanocolumn structures incorporating indium. Firstly, bulk films of cubic AlxGa1-xN with aluminium fractions (x) spanning the ...

  19. Review of data on irradiation creep of monolithic SiC

    Energy Technology Data Exchange (ETDEWEB)

    Garner, F.A.; Youngblood, G.E.; Hamilton, M.L. [Pacific Northwest National Laboratory, Richland, WA (United States)

    1996-04-01

    An effort is now underway to design an irradiation creep experiment involving SiC composites to SiC fibers. In order to successfully design such an experiment, it is necessary to review and assess the available data for monolithic SiC to establish the possible bounds of creep behavior for the composite. The data available show that monolithic SiC will indeed creep at a higher rate under irradiation compared to that of thermal creep, and surprisingly, it will do so in a temperature-dependant manner that is typical of metals.

  20. New Possibilities of Power Electronic Structures Using SiC Technology

    OpenAIRE

    2006-01-01

    This paper is dedicated to the recent unprecedented boom of SiC electronic technology. The contribution deals with brief survey of those properties. In particular, the differences (both good and bad) between SiC electronics technology and well-known silicon VLSI technology are highlighted. Projected performance benefits of SiC electronics are given for several large-scale applications on the end of the contribution. The basic properties of SiC material have been discussed already on the begin...

  1. Fabrication and Measurements of Hoop Strength of a Multi-Layered SiC Composite

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Daejong; Lee, Jongmin; Kim, Weon Ju; Park, Ji Yeon [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

    2013-10-15

    In this study, the influence of the winding patterns of the SiC fiber on the fiber volume fraction and hoop strength were investigated. Silicon carbide has a low neutron absorption cross section, a high melting point, and low chemical interaction, making it possible to use as fuel cladding in light water reactors. A multi-layered SiC composite tube as the LWR fuel cladding is composed of the monolith SiC inner layer, SiC/SiC composite intermediate layer, and monolith SiC outer layer.

  2. Spinor bose gases in cubic optical lattice

    Energy Technology Data Exchange (ETDEWEB)

    Mobarak, Mohamed Saidan Sayed Mohamed

    2014-01-27

    In recent years the quantum simulation of condensed-matter physics problems has resulted from exciting experimental progress in the realm of ultracold atoms and molecules in optical lattices. In this thesis we analyze theoretically a spinor Bose gas loaded into a three-dimensional cubic optical lattice. In order to account for different superfluid phases of spin-1 bosons with a linear Zeeman effect, we work out a Ginzburg-Landau theory for the underlying spin-1 Bose-Hubbard model. To this end we add artificial symmetry-breaking currents to the spin-1 Bose-Hubbard Hamiltonian in order to break the global U (1) symmetry. With this we determine a diagrammatic expansion of the grand-canonical free energy up to fourth order in the symmetry-breaking currents and up to the leading non-trivial order in the hopping strength which is of first order. As a cross-check we demonstrate that the resulting grand-canonical free energy allows to recover the mean-field theory. Applying a Legendre transformation to the grand-canonical free energy, where the symmetry-breaking currents are transformed to order parameters, we obtain the effective Ginzburg-Landau action. With this we calculate in detail at zero temperature the Mott insulator-superfluid quantum phase boundary as well as condensate and particle number density in the superfluid phase. We find that both mean-field and Ginzburg-Landau theory yield the same quantum phase transition between the Mott insulator and superfluid phases, but the range of validity of the mean-field theory turns out to be smaller than that of the Ginzburg-Landau theory. Due to this finding we expect that the Ginzburg-Landau theory gives better results for the superfluid phase and, thus, we restrict ourselves to extremize only the effective Ginzburg-Landau action with respect to the order parameters. Without external magnetic field the superfluid phase is a polar (ferromagnetic) state for anti-ferromagnetic (ferromagnetic) interactions, i.e. only the

  3. Small Incision Cataract Surgery (SICS with Clear Corneal Incision and SICS with Scleral Incision – A Comparative Study

    Directory of Open Access Journals (Sweden)

    Md Shafiqul Alam

    2014-01-01

    Full Text Available Background: Age related cataract is the leading cause of blindness and visual impairment throughout the world. With the advent of microsurgical facilities simple cataract extraction surgery has been replaced by small incision cataract surgery (SICS with posterior chamber intra ocular lens implant, which can be done either with clear corneal incision or scleral incision. Objective: To compare the post operative visual outcome in these two procedures of cataract surgery. Materials and method: This comparative study was carried out in the department of Ophthalmology, Delta Medical College & Hospital, Dhaka, Bangladesh, during the period of January 2010 to December 2012. Total 60 subjects indicated for age related cataract surgery irrespective of sex with the age range of 40-80 years with predefined inclusion and exclusion criteria were enrolled in the study. Subjects were randomly and equally distributed in 2 groups; Group A for SICS with clear corneal incision and group B for SICS with scleral incision. Post operative visual out come was evaluated by determining visual acuity and astigmatism in different occasions and was compared between groups. Statistical analysis was done by SPSS for windows version12. Results: The highest age incidence (43.3% was found between 61 to 70 years of age group. Among study subjects 40 were male and 20 were female. Preoperative visual acuity and astigmatism were evenly distributed between groups. Regarding postoperative unaided visual outcome, 6/12 or better visual acuity was found in 19.98% cases in group A and 39.6% cases in group B at 1st week. At 6th week 6/6 vision was found in 36.3% in Group A and 56.1% in Group B and 46.2% in group A and 66% in group B without and with correction respectively. With refractive correction, 6/6 vision was attained in 60% subjects of group A and 86.67% of group B at 8th week. Post operative visual acuity was statistically significant in all occasions. Postoperative astigmatism of

  4. Pd/Ta2O5/SiC Schottky-diode hydrogen sensors formed by using rapid thermal oxidation of Ta thin films

    Science.gov (United States)

    Joo, Sung-Jae; Choi, Je Hoon; Kim, Seong Jeen; Kim, Sang-Cheol

    2013-11-01

    Pd/Ta2O5/SiC Schottky-diode hydrogen sensors were fabricated, and their hydrogen gas sensing performance was investigated at 573 K and 773 K. Interfacial Ta2O5 films of 120 nm in thickness were formed by using rapid thermal oxidation (RTO) of the sputtered Ta films on SiC. The crystallinity of the Ta and the Ta2O5 films were characterized by using X-ray diffraction (XRD). As-sputtered Ta films on 4H-SiC are composed of α-Ta (body-centered-cubic) and β-Ta (tetragonal), and α-Ta (110) is the dominant orientation. After RTO at 573 K, the Ta films are converted to β-Ta2O5 (orthorhombic). The diode sensors show high sensitivity to H2 even at the low H2 concentration of 500 ppm, and the voltage change of the sensor upon H2 exposure is proportional to the H2 concentration in the range of 500 ˜ 2000 ppm at 573 K. The response voltage ΔV is shown to arise mostly from the change in the series resistance component of the sensor upon H2 exposure; the main origin of that change is believed to be the Ta2O5 interfacial layer. The response time t90 of the sensor at 573 K was estimated to be approximately 8 s.

  5. The effect of structural defects in SiC particles on the static & dynamic mechanical response of a 15 volume percent SiC/6061-Al matrix composite

    Energy Technology Data Exchange (ETDEWEB)

    Vaidya, R.U.; Song, S.G.; Zurek, A.K.; Gray, G.T. III

    1995-09-01

    Static and Dynamic mechanical tests, and microstructural examinations performed on a SiC particle reinforced 6061-Al matrix composite indicated that particle cracking significantly affected the strength, strain hardening, and failure mechanism of the composite. Cracks were observed to nucleate and propagate on stacking faults and interfaces between the various phases within the reinforcing SiC particles. Planar defects were the predominant artifacts seen in the SiC particles. Partial dislocations were also observed bounding the stacking faults within the reinforcement phase.

  6. Low Activation Joining of SiC/SiC Composites for Fusion Applications: Modeling Thermal and Irradiation-induced Swelling Effects on Integrity of Ti3SiC2/SiC Joint

    Energy Technology Data Exchange (ETDEWEB)

    Nguyen, Ba Nghiep; Henager, Charles H.; Kurtz, Richard J.; Ferraris, M.; Katoh, Yutai

    2017-03-31

    This work developed a continuum damage mechanics model that incorporates thermal expansion combined with irradiation-induced swelling effects to study the origin of cracking observed in recent irradiation experiments. Micromechanical modeling using an Eshelby-Mori-Tanaka approach was used to compute the thermoelastic properties of the Ti3SiC2/SiC joint needed for the model. In addition, a microstructural dual-phase Ti3SiC2/SiC model was developed to determine irradiation-induced swelling of the composite joint at a given temperature resulting from differential swelling of SiC and the Ti3SiC2 MAX phase. Three cases for the miniature torsion hourglass (THG) specimens containing a Ti3SiC2/SiC joint were analyzed corresponding to three irradiation temperatures: 800oC, 500oC, and 400oC.

  7. Feasibility study of a SiC sandwich neutron spectrometer

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Jian, E-mail: caepwujian@163.com [Institute of Nuclear Physics and Chemistry, China Academy of Engineering Physics, Mianyang 621900, Sichuan Province (China); Lei, Jiarong, E-mail: jiarong_lei@163.com [Institute of Nuclear Physics and Chemistry, China Academy of Engineering Physics, Mianyang 621900, Sichuan Province (China); Jiang, Yong; Chen, Yu; Rong, Ru; Zou, Dehui; Fan, Xiaoqiang [Institute of Nuclear Physics and Chemistry, China Academy of Engineering Physics, Mianyang 621900, Sichuan Province (China); Chen, Gang; Li, Li; Bai, Song [Nanjing Electronic Devices Institute, Nanjing 210016 (China)

    2013-04-21

    Semiconductor sandwich neutron spectrometers are suitable for in-pile measurements of fast reactor spectra thanks to their compact and relatively simple design. We have assembled and tested a sandwich neutron spectrometer based on 4H-silicon carbide (4H-SiC) Schottky diodes. The SiC diodes detect neutrons via neutron-induced charged particles (tritons and alpha particles) produced by {sup 6}Li(n,α){sup 3}H reaction. {sup 6}LiF neutron converter layers are deposited on the front surface of Schottky diodes by magnetron sputtering. The responses of SiC diodes to charged particles were investigated with an {sup 241}Am alpha source. A sandwich neutron spectrometer was assembled with two SiC Schottky diodes selected based on the charged-particle-response experimental results. The low-energy neutron response of the sandwich spectrometer was measured in the neutron field of the Chinese Fast Burst Reactor-II (CFBR-II). Spectra of alpha particles and tritons from {sup 6}Li(n,α){sup 3}H reaction were obtained with two well-resolved peaks. The energy resolution of the sum spectrum was 8.8%. The primary experimental results confirmed the 4H-SiC sandwich neutron spectrometer's feasibility. -- Highlights: ► Sandwich neutron spectrometer employing 4H-SiC as a detecting material has been developed for the first time. ► {sup 6}LiF neutron converter has been deposited on the surface of 4H-SiC Schottky diode. ► Preliminary testing results obtained with the 4H-SiC sandwich neutron spectrometer are presented.

  8. Ultra High Temperature (UHT) SiC Fiber (Phase 2)

    Science.gov (United States)

    Dicarlo, James A.; Jacobson, Nathan S.; Lizcano, Maricela; Bhatt, Ramakrishna T.

    2015-01-01

    Silicon-carbide fiber-reinforced silicon-carbide ceramic matrix composites (SiCSiC CMC) are emerginglightweight re-usable structural materials not only for hot section components in gas turbine engines, but also for controlsurfaces and leading edges of reusable hypersonic vehicles as well as for nuclear propulsion and reactor components. Ithas been shown that when these CMC are employed in engine hot-section components, the higher the upper usetemperature (UUT) of the SiC fiber, the more performance benefits are accrued, such as higher operating temperatures,reduced component cooling air, reduced fuel consumption, and reduced emissions. The first generation of SiCSiC CMC with a temperature capability of 2200-2400F are on the verge of being introduced into the hot-section components ofcommercial and military gas turbine engines.Today the SiC fiber type currently recognized as the worlds best in terms ofthermo-mechanical performance is the Sylramic-iBN fiber. This fiber was previously developed by the PI at NASA GRC using patented processes to improve the high-cost commercial Sylramic fiber, which in turn was derived from anotherlow-cost low-performance commercial fiber. Although the Sylramic-iBN fiber shows state-of-the art creep and rupture resistance for use temperatures above 2550oF, NASA has shown by fundamental creep studies and model developmentthat its microstructure and creep resistance could theoretically be significantly improved to produce an Ultra HighTemperature (UHT) SiC fiber.This Phase II Seedling Fund effort has been focused on the key objective of effectively repeating the similar processes used for producing the Sylramic-iBN fiber using a design of experiments approach to first understand the cause of the less than optimum Sylramic-iBN microstructure and then attempting to develop processconditions that eliminate or minimize these key microstructural issues. In so doing, it is predicted that that theseadvanced process could result in an UHT SiC

  9. Silicon assistant carbothermal reduction for SiC powders

    Institute of Scientific and Technical Information of China (English)

    Kezhi Li; Jian Wei; Hejun Li; Chuang Wang; Gengsheng Jiao

    2008-01-01

    The silicon assistant method to increase the reaction yield of carbothermal reduction of silica at a lower temperature is reported. The effect of silicon on the carbothermal reduction process has been investigated in detail. Compared with traditional reduction, the introduction of silicon can change the reaction path and further increase the conversion of silicon carbide at a lower temperature. It is considered that the assistant reduction consists of three steps: vaporizing and melting of silicon, formation of silicon monoxide, and synthesis of silicon carbide. The morphology of the synthesized SiC powders through the silicon assistant method can be affected apparently by the experimental temperature.

  10. Construction Progress of the S-IC Test Stand

    Science.gov (United States)

    1961-01-01

    At its founding, the Marshall Space Flight Center (MSFC) inherited the Army's Jupiter and Redstone test stands, but much larger facilities were needed for the giant stages of the Saturn V. From 1960 to 1964, the existing stands were remodeled and a sizable new test area was developed. The new comprehensive test complex for propulsion and structural dynamics was unique within the nation and the free world, and they remain so today because they were constructed with foresight to meet the future as well as on going needs. Construction of the S-IC Static test stand complex began in 1961 in the west test area of MSFC, and was completed in 1964. The S-IC static test stand was designed to develop and test the 138-ft long and 33-ft diameter Saturn V S-IC first stage, or booster stage, weighing in at 280,000 pounds. Required to hold down the brute force of a 7,500,000-pound thrust produced by 5 F-1 engines, the S-IC static test stand was designed and constructed with the strength of hundreds of tons of steel and 12,000,000 pounds of cement, planted down to bedrock 40 feet below ground level. The foundation walls, constructed with concrete and steel, are 4 feet thick. The base structure consists of four towers with 40-foot-thick walls extending upward 144 feet above ground level. The structure was topped by a crane with a 135-foot boom. With the boom in the upright position, the stand was given an overall height of 405 feet, placing it among the highest structures in Alabama at the time. This photo shows the construction progress of the test stand as of August 14, 1961. Water gushing in from the disturbance of a natural spring contributed to constant water problems during the construction process. It was necessary to pump water from the site on a daily basis and is still pumped from the site today. The equipment is partially submerged in the water emerging from the spring.

  11. Resonant energy transfer between SiC and CdTe quantum dots%SiC和 CdTe 量子点间荧光共振能量转移

    Institute of Scientific and Technical Information of China (English)

    王红玉; 王伟; 陈波; 王正斌

    2016-01-01

    采用水相法制备了巯基乙胺包裹的CdTe量子点,用湿化学刻蚀法制得了SiC量子点,并对CdTe和S iC量子点的光学特性进行了研究。结果表明:随着激发波长的增加,因量子限制效应,S iC量子点荧光的最大发射峰出现红移;CdTe量子点的发射谱和SiC量子点的吸收谱有较大的重叠,且带边发射有较大的能量分离;CdTe量子点和SiC量子点之间存在福斯特共振能量转移。同时,CdTe和SiC混合液蒸干后的荧光光谱显示,供体SiC的荧光减弱,而受体CdTe的荧光增强;相同大小的CdTe、SiC及CdTe和SiC混合物的液滴在空气中自然蒸发时,液滴的颜色在紫外灯照射下发生了变化,这是由于蒸发过程中,液滴体积减小,导致液滴中量子点间的距离减小,有利于CdTe量子点和SiC量子点间发生福斯特共振能量转移。%3‐Mercaptopropionic acid (MPA)‐capped CdTe quantum dots (QDs) were synthesized in aqueous solution .SiC QDs were performed by wet chemical etching of cubic SiC powder . The optical properties of SiC QDs exhibited that PL emission peaks shifted to long wavelength with the increase of excitation wavelength ,which attributed to the quantum confinement effect .In addition , fluorescence emission spectra of SiC QDs overlapped with the absorption spectra of CdTe QDs ,and there was significant energy separation between band emissions from CdTe QDs and SiC QDs . Hence ,the forster resonance energy transfer between CdTe and SiC QDs was studied .PL spectra of the mixture of CdTe and SiC show that the PL intensity of SiC decreases and that of CdTe increases .In addition ,the emission color of the mixture of CdTe and SiC has changed under an ultraviolet lamp at different times during evaporation of solvent .T hese results are due to the forster resonance energy transfer between CdTe and SiC QDs .

  12. 10kV SiC MOSFET split output power module

    DEFF Research Database (Denmark)

    Beczkowski, Szymon; Li, Helong; Uhrenfeldt, Christian

    2015-01-01

    The poor body diode performance of the first generation of 10kV SiC MOSFETs and the parasitic turn-on phenomenon limit the performance of SiC based converters. Both these problems can potentially be mitigated using a split output topology. In this paper we present a comparison between a classical...

  13. Control of SiC Based Front-End Rectifier under Unbalanced Supply Voltage

    DEFF Research Database (Denmark)

    Maheshwari, Ramkrishan; Trintis, Ionut; Gohil, Ghanshyamsinh Vijaysinh

    2015-01-01

    A voltage source converter is used as a front end converter typically. In this paper, a converter which is realized using SiC MOSFET is considered. Due to SiC MOSFET, a switching frequency more than 50 kHz can be achieved. This can help increasing the current control loop bandwidth, which...

  14. Characterisation of 10 kV 10 A SiC MOSFET

    DEFF Research Database (Denmark)

    Eni, Emanuel-Petre; Incau, Bogdan Ioan; Munk-Nielsen, Stig

    2015-01-01

    The objective of this paper is to characterize and evaluate the static and dynamic performances of 10 kV 10 A 4H-SIC MOSFETs at high temperatures. The results show good electrical performances of the SiC MOSFETs for high temperature operations. The double-pulse test results showed interesting...

  15. Using of the Modern Semiconductor Devices Based on the SiC

    Directory of Open Access Journals (Sweden)

    Pavel Drabek

    2008-01-01

    Full Text Available This paper deals with possibility of application of the semiconductor devices based on the SiC (Silicon Carbide inthe power electronics. Basic synopsis of SiC based materials problems are presented, appreciation of their properties incomparison with current using power semiconductor devices ((IGBT, MOSFET, CoolFET transistors.

  16. A Short-Circuit Safe Operation Area Identification Criterion for SiC MOSFET Power Modules

    DEFF Research Database (Denmark)

    Reigosa, Paula Diaz; Iannuzzo, Francesco; Luo, Haoze

    2017-01-01

    to the experimental results, two different failure mechanisms have been identified, both reducing the short-circuit capability of SiC power modules with respect to discrete SiC devices. Based on such failure mechanisms, two short-circuit safety criteria have been formulated: 1) the short...

  17. Synthesis of SiC from rice husk in a plasma reactor

    Indian Academy of Sciences (India)

    S K Singh; B C Mohanty; S Basu

    2002-11-01

    A new route for production of SiC from rice husk is reported by employing thermal plasma technique. The formation of -SiC is observed in a short time of 5 min. The samples are characterized by XRD and SEM.

  18. Development of Simulink-Based SiC MOSFET Modeling Platform for Series Connected Devices

    DEFF Research Database (Denmark)

    Tsolaridis, Georgios; Ilves, Kalle; Reigosa, Paula Diaz

    2016-01-01

    A new MATLAB/Simulink-based modeling platform has been developed for SiC MOSFET power modules. The modeling platform describes the electrical behavior f a single 1.2 kV/ 350 A SiC MOSFET power module, as well as the series connection of two of them. A fast parameter initialization is followed...

  19. Deposition of thin ultrafiltration membranes on commercial SiC microfiltration tubes

    DEFF Research Database (Denmark)

    Facciotti, Marco; Boffa, Vittorio; Magnacca, Giuliana;

    2014-01-01

    Porous SiC based materials present high mechanical, chemical and thermal robustness, and thus have been largely applied to water-filtration technologies. In this study, commercial SiC microfiltration tubes with nominal pore size of 0.04 m were used as carrier for depositing thin aluminium oxide...

  20. The effect of Cs{sup +} ions on codeposition of SiC particles with nickel

    Energy Technology Data Exchange (ETDEWEB)

    Rudnik, Ewa, E-mail: erudnik@agh.edu.pl [AGH University of Science and Technology, Faculty of Non-Ferrous Metals, Department of Physical Chemistry and Metallurgy of Non-Ferrous Metals, Laboratory of Physical Chemistry and Electrochemistry, Al. Mickiewicza 30, 30-059 Cracow (Poland); Burzynska, Lidia; Gut, Marcin [AGH University of Science and Technology, Faculty of Non-Ferrous Metals, Department of Physical Chemistry and Metallurgy of Non-Ferrous Metals, Laboratory of Physical Chemistry and Electrochemistry, Al. Mickiewicza 30, 30-059 Cracow (Poland)

    2011-04-15

    Research highlights: {yields} The papers describes electrodeposition of SiC particles with nickel matrix in the presence of cesium ions. {yields} Correlations among the Cs{sup +} concentration in the bath, kinetics of the cathodic process, SiC content in the deposits as well as adsorption of Ni{sup 2+} ions on SiC were found. {yields} Microhardness of the Ni/SiC deposits was also determined. - Abstract: Electrodeposition of SiC particles (technical powder) with nickel matrix in the presence of cesium ions (0-37.6 mM) was investigated. The influence of Cs{sup +} concentration on cathodic polarization curves was determined in galvanostatic and potentiodynamic measurements. The presence of Cs{sup +} in the solution enhanced in some extent adsorption of Ni{sup 2+} ions on SiC, but preferential cesium adsorption occurred simultaneously. The last phenomenon resulted in cesium incorporation in the composite coating. The particle content in the deposits (16-24 vol%) was governed by the amount of nickel ions adsorbed on SiC. Structure of the composite coatings was studied by microscopic observations. At highest Cs{sup +} concentrations, incorporation of small SiC grains was inhibited. Microhardness of deposits (390-800 HV) was directly dependent on the SiC content in the coatings.

  1. Broadband Antireflection and Light Extraction Enhancement in Fluorescent SiC with Nanodome Structures

    DEFF Research Database (Denmark)

    Ou, Yiyu; Zhu, Xiaolong; Jokubavicius, Valdas

    2014-01-01

    We demonstrate a time-efficient and low-cost approach to fabricate Si3N4 coated nanodome structures in fluorescent SiC. Nanosphere lithography is used as the nanopatterning method and SiC nanodome structures with Si3N4 coating are formed via dry etching and thin film deposition process. By using...

  2. MAX Phase Modified SiC Composites for Ceramic-Metal Hybrid Cladding Tubes

    Energy Technology Data Exchange (ETDEWEB)

    Jung, Yang-Il; Kim, Sun-Han; Park, Dong-Jun; Park, Jeong-Hwan; Park, Jeong-Yong; Kim, Hyun-Gil; Koo, Yang-Hyun [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

    2015-05-15

    A metal-ceramic hybrid cladding consists of an inner zirconium tube, and an outer SiC fiber-matrix SiC ceramic composite with surface coating as shown in Fig. 1 (left-hand side). The inner zirconium allows the matrix to remain fully sealed even if the ceramic matrix cracks through. The outer SiC composite can increase the safety margin by taking the merits of the SiC itself. In addition, the outermost layer prevents the dissolution of SiC during normal operation. On the other hand, a ceramic-metal hybrid cladding consists of an outer zirconium tube, and an inner SiC ceramic composite as shown in Fig. 1 (right-hand side). The outer zirconium protects the fuel rod from a corrosion during reactor operation, as in the present fuel claddings. The inner SiC composite, additionally, is designed to resist the severe oxidation under a postulated accident condition of a high-temperature steam environment. Reaction-bonded SiC was fabricated by modifying the matrix as the MAX phase. The formation of Ti{sub 3}SiC{sub 2} was investigated depending on the compositions of the preform and melt. In most cases, TiSi{sub 2} was the preferential phase because of its lowest melting point in the Ti-Si-C system. The evidence of Ti{sub 3}SiC{sub 2} was the connection with the pressurizing.

  3. Tribo-mechanical behaviour of SiC filled glass-epoxy composites at ...

    African Journals Online (AJOL)

    Tribo-mechanical behaviour of SiC filled glass-epoxy composites at elevated temperatures. ... Username, Password, Remember me, or Register ... For instance, the introduction of ceramics such (SiC, Al2O3, TiC, etc.) as within the matrix ...

  4. Development of nanoporous TiO2 and SiC membranes for membrane filtration

    DEFF Research Database (Denmark)

    König, Katja; Vigna, Erika; Farsi, Ali

    reverse osmosis membranes by ceramic counterparts would provide higher fluxes and allow more efficient cleaning of the membranes. The aim of this work was to prepare defect-free nanoporous ceramic (TiO2 and SiC) layers on macroporous SiC supports by using electrophoretic deposition and dip...

  5. On the impact of the plasma jet energy on the product of plasmadynamic synthesis in the Si-C system

    Science.gov (United States)

    Nikitin, D.; Sivkov, A.

    2015-10-01

    Silicon carbide (SiC) nanoparticles can be used for ceramics reinforcement, creation of nanostructured ceramics, microelectromechanical systems. The paper presents the results of plasmadynamic synthesis of silicon carbide nanopowders. This method was realized by the synthesis in an electrodischarge plasma jet generated by a high-current pulsed coaxial magnetoplasma accelerator. Powdered carbon and silicon were used as precursors for the reaction. Four experiments with different energy levels (from 10.0 to 30.0 kJ) were carried out. The synthesized products were analysed by several modern techniques including X-ray diffractometry, scanning and transmission electron microscopy. According to analysis results all the products mainly composed of cubic silicon carbide (b-SiC) with a small amount of unreacted precursors. Silicon carbide particles have a clear crystal structure, a triangular shape and sizes to a few hundred nanometers. Comparison of the results of experiments with different energy levels made it possible to draw conclusions on ways to control product phase composition and dispersion. The silicon carbide content and particles sizes increase with increasing the energy level.

  6. A new hypercube variant: Fractal Cubic Network Graph

    Directory of Open Access Journals (Sweden)

    Ali Karci

    2015-03-01

    Full Text Available Hypercube is a popular and more attractive interconnection networks. The attractive properties of hypercube caused the derivation of more variants of hypercube. In this paper, we have proposed two variants of hypercube which was called as “Fractal Cubic Network Graphs”, and we have investigated the Hamiltonian-like properties of Fractal Cubic Network Graphs FCNGr(n. Firstly, Fractal Cubic Network Graphs FCNGr(n are defined by a fractal structure. Further, we show the construction and characteristics analyses of FCNGr(n where r=1 or r=2. Therefore, FCNGr(n is a Hamiltonian graph which is obtained by using Gray Code for r=2 and FCNG1(n is not a Hamiltonian Graph. Furthermore, we have obtained a recursive algorithm which is used to label the nodes of FCNG2(n. Finally, we get routing algorithms on FCNG2(n by utilizing routing algorithms on the hypercubes.

  7. Ferromagnetic Ground States in Face-Centered Cubic Hubbard Clusters

    Science.gov (United States)

    Souza, T. X. R.; Macedo, C. A.

    2016-01-01

    In this study, the ground state energies of face-centered cubic Hubbard clusters are analyzed using the Lanczos method. Examination of the ground state energy as a function of the number of particle per site n showed an energy minimum for face-centered cubic structures. This energy minimum decreased in n with increasing coulombic interaction parameter U. We found that the ground state energy had a minimum at n = 0.6, when U = 3W, where W denotes the non-interacting energy bandwidth and the face-centered cubic structure was ferromagnetic. These results, when compared with the properties of nickel, shows strong similarity with other finite temperature analyses in the literature and supports the Hirsh’s conjecture that the interatomic direct exchange interaction dominates in driving the system into a ferromagnetic phase. PMID:27583653

  8. Superconductivity in cubic noncentrosymmetric PdBiSe Crystal

    Science.gov (United States)

    Joshi, B.; Thamizhavel, A.; Ramakrishnan, S.

    2015-03-01

    Mixing of spin singlet and spin triplet superconducting pairing state is expected in noncentrosymmetric superconductors (NCS) due to the inherent presence of Rashba-type antisymmetric spin-orbit coupling. Unlike low symmetry (tetragonal or monoclinic) NCS, parity is isotropicaly broken in space for cubic NCS and can additionally lead to the coexistence of magnetic and superconducting state under certain conditions. Motivated with such enriched possibility of unconventional superconducting phases in cubic NCS we are reporting successful formation of single crystalline cubic noncentrosymmetric PdBiSe with lattice parameter a = 6.4316 Å and space group P21 3 (space group no. 198) which undergoes to superconducting transition state below 1.8 K as measured by electrical transport and AC susceptibility measurements. Significant strength of Rashba-type antisymmetric spin-orbit coupling can be expected for PdBiSe due to the presence of high Z (atomic number) elements consequently making it potential candidate for unconventional superconductivity.

  9. Cubic interactions of Maxwell-like higher spins

    CERN Document Server

    Francia, Dario; Mkrtchyan, Karapet

    2016-01-01

    We study the cubic vertices for Maxwell-like higher-spins in flat space. Reducibility of their free spectra implies that a single cubic vertex involving any three fields subsumes a number of couplings among different particles of various spins. The resulting vertices do not involve traces of the fields and in this sense are simpler than their Fronsdal counterparts. We propose an extension of both the free theory and of its cubic deformation to a more general class of partially reducible systems, that one can obtain from the original theory upon imposing trace constraints of various orders. The key to our results is a version of the Noether procedure allowing to systematically account for the deformations of the transversality conditions to be imposed on the gauge parameters at the free level.

  10. Extended temperature dependence of elastic constants in cubic crystals.

    Science.gov (United States)

    Telichko, A V; Sorokin, B P

    2015-08-01

    To extend the theory of the temperature dependence of the elastic constants in cubic crystals beyond the second- and third-order elastic constants, the fourth-order elastic constants, as well as the non-linearity in the thermal expansion temperature dependence, have been taken into account. Theoretical results were represented as temperature functions of the effective elastic constants and compared with experimental data for a number of cubic crystals, such as alkali metal halides, and elements gold and silver. The relations obtained give a more accurate description of the experimental temperature dependences of second-order elastic constants for a number of cubic crystals, including deviations from linear behavior. A good agreement between theoretical estimates and experimental data has been observed.

  11. Tetragonal and cubic zirconia multilayered ceramic constructs created by EPD.

    Science.gov (United States)

    Mochales, Carolina; Frank, Stefan; Zehbe, Rolf; Traykova, Tania; Fleckenstein, Christine; Maerten, Anke; Fleck, Claudia; Mueller, Wolf-Dieter

    2013-02-14

    The interest in electrophoretic deposition (EPD) for nanomaterials and ceramics production has widely increased due to the versatility of this technique to effectively combine different materials in unique shapes and structures. We successfully established an EPD layering process with submicrometer sized powders of Y-TZP with different mol percentages of yttrium oxide (3 and 8%) and produced multilayers of alternating tetragonal and cubic phases with a clearly defined interface. The rationale behind the design of these multilayer constructs was to optimize the properties of the final ceramic by combining the high mechanical toughness of the tetragonal phase of zirconia together with the high ionic conductivity of its cubic phase. In this work, a preliminary study of the mechanical properties of these constructs proved the good mechanical integrity of the multilayered constructs obtained as well as crack deflection in the interface between tetragonal and cubic zirconia layers.

  12. Body-centered-cubic Ni and its magnetic properties.

    Science.gov (United States)

    Tian, C S; Qian, D; Wu, D; He, R H; Wu, Y Z; Tang, W X; Yin, L F; Shi, Y S; Dong, G S; Jin, X F; Jiang, X M; Liu, F Q; Qian, H J; Sun, K; Wang, L M; Rossi, G; Qiu, Z Q; Shi, J

    2005-04-08

    The body-centered-cubic (bcc) phase of Ni, which does not exist in nature, has been achieved as a thin film on GaAs(001) at 170 K via molecular beam epitaxy. The bcc Ni is ferromagnetic with a Curie temperature of 456 K and possesses a magnetic moment of 0.52+/-0.08 micro(B)/atom. The cubic magnetocrystalline anisotropy of bcc Ni is determined to be +4.0x10(5) ergs x cm(-3), as opposed to -5.7x10(4) ergs x cm(-3) for the naturally occurring face-centered-cubic (fcc) Ni. This sharp contrast in the magnetic anisotropy is attributed to the different electronic band structures between bcc Ni and fcc Ni, which are determined using angle-resolved photoemission with synchrotron radiation.

  13. Hardness and thermal stability of cubic silicon nitride

    DEFF Research Database (Denmark)

    Jiang, Jianzhong; Kragh, Flemming; Frost, D. J.

    2001-01-01

    The hardness and thermal stability of cubic spinel silicon nitride (c-Si3N4), synthesized under high-pressure and high-temperature conditions, have been studied by microindentation measurements, and x-ray powder diffraction and scanning electron microscopy, respectively The phase at ambient...... temperature has an average hardness of 35.31 GPa, slightly larger than SiO2 stishovite, which is often referred to as the third hardest material after diamond and cubic boron nitride. The cubic phase is stable up to 1673 K in air. At 1873 K, alpha -and beta -Si3N4 phases are observed, indicating a phase...... transformation sequence of c-to-alpha -to-beta -Si3N4 phases....

  14. Synthesis of Freestanding Graphene on SiC by a Rapid-Cooling Technique

    Science.gov (United States)

    Bao, Jianfeng; Norimatsu, Wataru; Iwata, Hiroshi; Matsuda, Keita; Ito, Takahiro; Kusunoki, Michiko

    2016-11-01

    Graphene has a negative thermal expansion coefficient; that is, when heated, the graphene lattice shrinks. On the other hand, the substrates typically used for graphene growth, such as silicon carbide, have a positive thermal expansion coefficient. Hence, on cooling graphene on SiC, graphene expands but SiC shrinks. This mismatch will physically break the atomic bonds between graphene and SiC. We have demonstrated that a graphenelike buffer layer on SiC can be converted to a quasifreestanding monolayer graphene by a rapid-cooling treatment. The decoupling of graphene from the SiC substrate was actually effective for reducing the electric carrier scattering due to interfacial phonons. In addition, the rapidly cooled graphene obtained in this way was of high-quality, strain-free, thermally stable, and strongly hole doped. This simple, classical, but quite novel technique for obtaining quasifreestanding graphene could open a new path towards a viable graphene-based semiconductor industry.

  15. A Novel SiC Foam Valve Tray for Distillation Columns

    Institute of Scientific and Technical Information of China (English)

    张吕鸿; 刘学宽; 李鑫钢; 高鑫; 隋红; 张劲松; 杨振明; 田冲; 李洪

    2013-01-01

    The novel SiC foam valve tray was made of thin slices of SiC foam material with a high specific surface area. Hydrodynamic performances of the novel SiC foam valve tray were studied with air-water system at atmos-pheric pressure. These performance parameters included pressure drop, entrainment, weeping and clear liquid height. The mass transfer efficiency of the SiC foam valve tray was measured in laboratory plate column. Compared with the F1 float valve tray, the dry pressure drop was decreased about 25%, the entrainment rate was about 70%lower at high gas load, the weeping was much better, and the mass transfer efficiency was far higher. Thus, the overall performance of the novel SiC foam valve tray was better than that of F1 float valve tray.

  16. Preparation of Ti3SiC2 with Aluminum by Means of Spark Plasma Sintering

    Institute of Scientific and Technical Information of China (English)

    2003-01-01

    Polycrystalline bulk Ti3SiC2 material with a high purity and density was fabricated by spark plasma sintering from the elemental powder mixture with starting composition of Ti3Si1-xAlxC2,where x=0.05-0.2.X-ray diffraction patterns and scanning electron microscopy photographs of the fully dense samples show that a proper addition of aluminum promotes the formation,and accelerates the crystal growth rate of Ti3SiC2,consequently results in a high purity of the prepared samples.The synthesized Ti3SiC2 is in plane-shape with a size of about 10-25μm in the elongated dimension.Solid solution of aluminum decreases the thermal stability of Ti3SiC2,and lowers the temperature of Ti3SiC2 decomposeing to be 1300 ℃.

  17. Image interpolation by two-dimensional parametric cubic convolution.

    Science.gov (United States)

    Shi, Jiazheng; Reichenbach, Stephen E

    2006-07-01

    Cubic convolution is a popular method for image interpolation. Traditionally, the piecewise-cubic kernel has been derived in one dimension with one parameter and applied to two-dimensional (2-D) images in a separable fashion. However, images typically are statistically nonseparable, which motivates this investigation of nonseparable cubic convolution. This paper derives two new nonseparable, 2-D cubic-convolution kernels. The first kernel, with three parameters (designated 2D-3PCC), is the most general 2-D, piecewise-cubic interpolator defined on [-2, 2] x [-2, 2] with constraints for biaxial symmetry, diagonal (or 90 degrees rotational) symmetry, continuity, and smoothness. The second kernel, with five parameters (designated 2D-5PCC), relaxes the constraint of diagonal symmetry, based on the observation that many images have rotationally asymmetric statistical properties. This paper also develops a closed-form solution for determining the optimal parameter values for parametric cubic-convolution kernels with respect to ensembles of scenes characterized by autocorrelation (or power spectrum). This solution establishes a practical foundation for adaptive interpolation based on local autocorrelation estimates. Quantitative fidelity analyses and visual experiments indicate that these new methods can outperform several popular interpolation methods. An analysis of the error budgets for reconstruction error associated with blurring and aliasing illustrates that the methods improve interpolation fidelity for images with aliased components. For images with little or no aliasing, the methods yield results similar to other popular methods. Both 2D-3PCC and 2D-5PCC are low-order polynomials with small spatial support and so are easy to implement and efficient to apply.

  18. Coating of SiC Powder with Nano YAG Phase

    Institute of Scientific and Technical Information of China (English)

    Zhang Ning; Cai Qingkui; Ru Hongqiang; Li Ying; Qiu Guanming; Sun Xudong

    2005-01-01

    SiC-YAG(Y3Al5O12) ceramic composite powders were prepared by co-precipitation coating method. Mechanism of co-precipitation coating of SiC powders with Y3+ and Al3+ precursors was investigated. If the concentration of [OH-] ion in the solution is controlled within the range between critical values for heterogeneous nucleation and homogeneous nucleation, Y3+ and Al3+ precipitation precursors can be coated on the surface of SiC particles. Y3+ and Al3+ precipitation precursors transform into YAG phase after calcining at 1000 ℃ without the formation of YAM and YAP phases. The formation temperature of YAG phase is about 600 ℃ lower than that of conventional powder mixing method. The effect of pH value of the solution and precipitant titration rate on coating quality of SiC-YAG composite powders was also studied. The results show that co-precipitation coating can be realized at a final pH of 9 and a precipitant titration rate of 5 ml·min-1.

  19. Crystal growth and characterization of fluorescent SiC

    DEFF Research Database (Denmark)

    Wellmann, P.; Kaiser, M.; Hupfer, T.

    of the phosphorous into the SiC substrate to make an all semiconductor white LED. In recent years, due to the improvement of the crystalline quality of SiC by the so called fast sublimation growth process (FSGP), high room temperature internal quantum efficiencies of the yellow donor acceptor pair luminescence of 6H......-SiC co-doped with nitrogen and boron has been achieved [1][2]. The source is the rate determining step, and is expected to be determining the fluorescent properties by introducing dopants to the layer from the source. The optimization process of the polycrystalline, co-doped SiC:B,N source material...... and its impact on the FSPG epitaxial process, in particular the influence on the brightness of the is presented. In particular, the doping properties of the poly-SiC source material influence on the brightness of the fluorescent 6H-SiC. In addition we have investigated how the grain orientation...

  20. Creep behavior for advanced polycrystalline SiC fibers

    Energy Technology Data Exchange (ETDEWEB)

    Youngblood, G.E.; Jones, R.H. [Pacific Northwest National Lab., Richland, WA (United States); Kohyama, Akira [Kyoto Univ. (Japan)] [and others

    1997-08-01

    A bend stress relaxation (BSR) test is planned to examine irradiation enhanced creep in polycrystalline SiC fibers which are under development for use as fiber reinforcement in SiC/SiC composite. Baseline 1 hr and 100 hr BSR thermal creep {open_quotes}m{close_quotes} curves have been obtained for five selected advanced SiC fiber types and for standard Nicalon CG fiber. The transition temperature, that temperature where the S-shaped m-curve has a value 0.5, is a measure of fiber creep resistance. In order of decreasing thermal creep resistance, with the 100 hr BSR transition temperature given in parenthesis, the fibers ranked: Sylramic (1261{degrees}C), Nicalon S (1256{degrees}C), annealed Hi Nicalon (1215{degrees}C), Hi Nicalon (1078{degrees}C), Nicalon CG (1003{degrees}C) and Tyranno E (932{degrees}C). The thermal creep for Sylramic, Nicalon S, Hi Nicalon and Nicalon CG fibers in a 5000 hr irradiation creep BSR test is projected from the temperature dependence of the m-curves determined during 1 and 100 hr BSR control tests.

  1. Cohort profile: the Social Inequality in Cancer (SIC) cohort study.

    Science.gov (United States)

    Nordahl, Helene; Hvidtfeldt, Ulla Arthur; Diderichsen, Finn; Rod, Naja Hulvej; Osler, Merete; Frederiksen, Birgitte Lidegaard; Prescott, Eva; Tjønneland, Anne; Lange, Theis; Keiding, Niels; Andersen, Per Kragh; Andersen, Ingelise

    2014-12-01

    The Social Inequality in Cancer (SIC) cohort study was established to determine pathways through which socioeconomic position affects morbidity and mortality, in particular common subtypes of cancer. Data from seven well-established cohort studies from Denmark were pooled. Combining these cohorts provided a unique opportunity to generate a large study population with long follow-up and sufficient statistical power to develop and apply new methods for quantification of the two basic mechanisms underlying social inequalities in cancer-mediation and interaction. The SIC cohort included 83 006 participants aged 20-98 years at baseline. A wide range of behavioural and biological risk factors such as smoking, physical inactivity, alcohol intake, hormone replacement therapy, body mass index, blood pressure and serum cholesterol were assessed by self-administered questionnaires, physical examinations and blood samples. All participants were followed up in nationwide demographic and healthcare registries. For those interested in collaboration, further details can be obtained by contacting the Steering Committee at the Department of Public Health, University of Copenhagen, at inan@sund.ku.dk.

  2. A Kochen–Specker inequality from a SIC

    Energy Technology Data Exchange (ETDEWEB)

    Bengtsson, Ingemar [Stockholms Universitet, Fysikum, S-10691 Stockholm (Sweden); Blanchfield, Kate, E-mail: kate@fysik.su.se [Stockholms Universitet, Fysikum, S-10691 Stockholm (Sweden); Cabello, Adán [Departamento de Física Aplicada II, Universidad de Sevilla, E-41012 Sevilla (Spain); Stockholms Universitet, Fysikum, S-10691 Stockholm (Sweden)

    2012-01-09

    Yu and Oh (eprint) have given a state-independent proof of the Kochen–Specker theorem in three dimensions using only 13 rays. The proof consists of showing that a non-contextual hidden variable theory necessarily leads to an inequality that is violated by quantum mechanics. We give a similar proof making use of 21 rays that constitute a SIC (symmetric informationally-complete positive operator-valued measure) and a complete set of MUB (mutually unbiased bases). A theory-independent inequality is also presented using the same 21 rays, as required for experimental tests of contextuality. -- Highlights: ► We find a state-independent Kochen–Specker inequality in dimension 3 with 21 rays. ► The rays constitute a SIC (9 rays) and a complete set of MUB (12 rays). ► Orthogonalities among the rays produce the Hesse configuration. ► The rays also give a state-independent non-contextual hidden variable inequality. ► We show that both inequalities are violated by quantum mechanics.

  3. Higher-spin Interactions from CFT: The Complete Cubic Couplings

    CERN Document Server

    Sleight, Charlotte

    2016-01-01

    In this letter we provide a complete holographic reconstruction of the cubic couplings in the minimal bosonic higher-spin theory in AdS$_{d+1}$. For this purpose we also determine the OPE coefficients of all single-trace conserved currents in the $d$-dimensional free scalar $O\\left(N\\right)$ vector model, and compute the tree-level three-point Witten diagram amplitudes for a generic cubic interaction of higher-spin gauge fields in the metric-like formulation.

  4. Classifying Cubic Edge-Transitive Graphs of Order 8

    Indian Academy of Sciences (India)

    Mehdi Alaeiyan; M K Hosseinipoor

    2009-11-01

    A simple undirected graph is said to be semisymmetric if it is regular and edge-transitive but not vertex-transitive. Let be a prime. It was shown by Folkman (J. Combin. Theory 3(1967) 215--232) that a regular edge-transitive graph of order 2 or 22 is necessarily vertex-transitive. In this paper, an extension of his result in the case of cubic graphs is given. It is proved that, every cubic edge-transitive graph of order 8 is symmetric, and then all such graphs are classified.

  5. Possible form of multi-polar interaction in cubic lattice

    Energy Technology Data Exchange (ETDEWEB)

    Sakai, Osamu; Shiina, Ryousuke; Shiba, Hiroyuki

    2003-05-01

    The invariant form of interaction between multi-poles, including the octupole, is studied for the simple cubic (SC), body centered and face centered cubic lattices. The coupling terms can be arranged in a way similar to that of the hopping matrix between the LCAO's. A table for SC by Shiina et al. (J. Phys. Soc. Japan 66 (1997) 1741) is generalized for the general wave number case of the three types of lattice. Recent experimental result of TmTe is thereby analyzed. The development of the ferromagnetic moment below the anti-ferromagnetic transition under the anti-ferro quadrupolar order phase is discussed in this connection.

  6. Possible form of multi-polar interaction in cubic lattice

    Science.gov (United States)

    Sakai, Osamu; Shiina, Ryousuke; Shiba, Hiroyuki

    2003-05-01

    The invariant form of interaction between multi-poles, including the octupole, is studied for the simple cubic (SC), body centered and face centered cubic lattices. The coupling terms can be arranged in a way similar to that of the hopping matrix between the LCAO's. A table for SC by Shiina et al. (J. Phys. Soc. Japan 66 (1997) 1741) is generalized for the general wave number case of the three types of lattice. Recent experimental result of TmTe is thereby analyzed. The development of the ferromagnetic moment below the anti-ferromagnetic transition under the anti-ferro quadrupolar order phase is discussed in this connection.

  7. Counting perfect matchings of cubic graphs in the geometric dual

    CERN Document Server

    Jiménez, Andrea

    2010-01-01

    Lov\\'asz and Plummer conjectured, in the mid 1970's, that every cubic graph G with no cutedge has an exponential in |V(G)| number of perfect matchings. In this work we show that every cubic planar graph G whose geometric dual graph is a stack triangulation has at least 3 times the golden ratio to |V(G)|/72 distinct perfect matchings. Our work builds on a novel approach relating Lov\\'asz and Plummer's conjecture and the number of so called groundstates of the widely studied Ising model from statistical physics.

  8. Elastic interaction of point defects in crystals with cubic symmetry

    Science.gov (United States)

    Kuz'michev, S. V.; Kukushkin, S. A.; Osipov, A. V.

    2013-07-01

    The energy of elastic mechanical interaction between point defects in cubic crystals is analyzed numerically. The finite-element complex ANSYS is used to investigate the character of interaction between point defects depending on their location along the crystallographic directions , , and on the distance from the free boundary of the crystal. The numerical results are compared with the results of analytic computations of the energy of interaction between two point defects in an infinite anisotropic medium with cubic symmetry. The interaction between compressible and incompressible defects of general type is studied. Conditions for onset of elastic attraction between the defects, which leads to general relaxation of the crystal elastic energy, are obtained.

  9. Cubic surfaces and their invariants: Some memories of Raymond Stora

    Directory of Open Access Journals (Sweden)

    Michel Bauer

    2016-11-01

    I then turn to the study of the family of cubic surfaces. They depend on 20 parameters, and the action of the 15 parameter group SL4(C splits the family in orbits depending on 5 parameters. This takes us into the realm of (geometric invariant theory. I review briefly the classical theorems on the structure of the ring of polynomial invariants and illustrate its many facets by looking at a simple example, before turning to the already involved case of cubic surfaces. The invariant ring was described in the 19th century. I show how to retrieve this description via counting/generating functions and character formulae.

  10. Detection and analysis of particles with failed SiC in AGR-1 fuel compacts

    Energy Technology Data Exchange (ETDEWEB)

    Hunn, John D., E-mail: hunnjd@ornl.gov [Oak Ridge National Laboratory (ORNL), P.O. Box 2008, Oak Ridge, TN 37831-6093 (United States); Baldwin, Charles A.; Gerczak, Tyler J.; Montgomery, Fred C.; Morris, Robert N.; Silva, Chinthaka M. [Oak Ridge National Laboratory (ORNL), P.O. Box 2008, Oak Ridge, TN 37831-6093 (United States); Demkowicz, Paul A.; Harp, Jason M.; Ploger, Scott A. [Idaho National Laboratory (INL), P.O. Box 1625, Idaho Falls, ID 83415-6188 (United States)

    2016-09-15

    Highlights: • Cesium release was used to detect SiC failure in HTGR fuel. • Tristructural-isotropic particles with SiC failure were isolated by gamma screening. • SiC failure was studied by X-ray tomography and SEM. • SiC degradation was observed after irradiation and subsequent safety testing. - Abstract: As the primary barrier to release of radioactive isotopes emitted from the fuel kernel, retention performance of the SiC layer in tristructural isotropic (TRISO) coated particles is critical to the overall safety of reactors that utilize this fuel design. Most isotopes are well-retained by intact SiC coatings, so pathways through this layer due to cracking, structural defects, or chemical attack can significantly contribute to radioisotope release. In the US TRISO fuel development effort, release of {sup 134}Cs and {sup 137}Cs are used to detect SiC failure during fuel compact irradiation and safety testing because the amount of cesium released by a compact containing one particle with failed SiC is typically ten or more times higher than that released by compacts without failed SiC. Compacts with particles that released cesium during irradiation testing or post-irradiation safety testing at 1600–1800 °C were identified, and individual particles with abnormally low cesium retention were sorted out with the Oak Ridge National Laboratory (ORNL) Irradiated Microsphere Gamma Analyzer (IMGA). X-ray tomography was used for three-dimensional imaging of the internal coating structure to locate low-density pathways through the SiC layer and guide subsequent materialography by optical and scanning electron microscopy. All three cesium-releasing particles recovered from as-irradiated compacts showed a region where the inner pyrocarbon (IPyC) had cracked due to radiation-induced dimensional changes in the shrinking buffer and the exposed SiC had experienced concentrated attack by palladium; SiC failures observed in particles subjected to safety testing were

  11. In situ toughened SiC ceramics with Al-B-C additions and oxide-coated SiC platelet/SiC composites

    Energy Technology Data Exchange (ETDEWEB)

    Cao, J. [Univ. of California, Berkeley, CA (United States). Dept. of Materials Science and Mineral Engineering]|[Lawrence Berkeley National Lab., CA (United States). Materials Sciences Div.

    1996-12-01

    This work aimed at fabrication and characterization of high toughness SiC ceramics through the applications of in situ toughening and SiC platelet reinforcement. The processing-microstructure-property relations of hot pressed SiC with Al, B, and C additions (designated as ABC-SiC) were investigated. Through a liquid phase sintering mechanism, dense SiC was obtained by hot pressing at a temperature as low as 1,700 C with 3 wt% Al, 0.6 wt% B, and 2 wt% C additions. These sintering aids also enhanced the {beta}-to-{alpha} (3C-to-4H) phase transformation, which promoted SiC grains to grow into plate-like shapes. Under optimal processing conditions, the microstructure exhibited high-aspect-ratio plate-shaped grains with a thin (< 1 nm) Al-containing amorphous grain boundary film. The mechanical properties of the toughened SiC and the composites were evaluated in comparison with a commercial Hexoloy SiC under identical test conditions. The C-curve behavior was examined using the strength-indentation load relationship and compared with that directly measured using precracked compact tension specimens. The in situ toughened ABC-SiC exhibited much improved flaw tolerance and a significantly rising R-curve behavior. A steady-state toughness in excess of 9 MPam{sup 1/2} was recorded for the ABC-SiC in comparison to a single valued toughness below 3 MPam{sup 1/2} for the Hexoloy. Toughening in the ABC-SiC was mainly attributed to grain bridging and subsequent pullout of the plate-shaped grains. The high toughness ABC-SiC exhibited a bend strength of 650 MPa with a Weibull modulus of 19; in comparison, the commercial SiC showed a bend strength of 400 MPa with a Weibull modulus of 6. Higher fracture toughness was also achieved by the reinforcement of SiC platelets, encapsulated with alumina, yttria, or silica, in a SiC matrix.

  12. DFT Study of the Electronic Structure of Cubic-SiC Nanopores with a C-Terminated Surface

    Directory of Open Access Journals (Sweden)

    M. Calvino

    2014-01-01

    Full Text Available A study of the dependence of the electronic structure and energetic stability on the chemical surface passivation of cubic porous silicon carbide (pSiC was performed using density functional theory (DFT and the supercell technique. The pores were modeled by removing atoms in the [001] direction to produce a surface chemistry composed of only carbon atoms (C-phase. Changes in the electronic states of the porous structures were studied by using different passivation schemes: one with hydrogen (H atoms and the others gradually replacing pairs of H atoms with oxygen (O atoms, fluorine (F atoms, and hydroxide (OH radicals. The results indicate that the band gap behavior of the C-phase pSiC depends on the number of passivation agents (other than H per supercell. The band gap decreased with an increasing number of F, O, or OH radical groups. Furthermore, the influence of the passivation of the pSiC on its surface relaxation and the differences in such parameters as bond lengths, bond angles, and cell volume are compared between all surfaces. The results indicate the possibility of nanostructure band gap engineering based on SiC via surface passivation agents.

  13. Phase diagrams and synthesis of cubic boron nitride

    CERN Document Server

    Turkevich, V Z

    2002-01-01

    On the basis of phase equilibria, the lowest temperatures, T sub m sub i sub n , above which at high pressures cubic boron nitride crystallization from melt solution is allowable in terms of thermodynamics have been found for a number of systems that include boron nitride.

  14. Interaction of dispersed cubic phases with blood components

    DEFF Research Database (Denmark)

    Bode, J C; Kuntsche, Judith; Funari, S S;

    2013-01-01

    The interaction of aqueous nanoparticle dispersions, e.g. based on monoolein/poloxamer 407, with blood components is an important topic concerning especially the parenteral way of administration. Therefore, the influence of human and porcine plasma on dispersed cubic phases was investigated...

  15. Cubic surfaces and their invariants: Some memories of Raymond Stora

    Science.gov (United States)

    Bauer, Michel

    2016-11-01

    Cubic surfaces embedded in complex projective 3-space are a classical illustration of the use of old and new methods in algebraic geometry. Recently, they made their appearance in physics, and in particular aroused the interest of Raymond Stora, to the memory of whom these notes are dedicated, and to whom I'm very much indebted. Each smooth cubic surface has a rich geometric structure, which I review briefly, with emphasis on the 27 lines and the combinatorics of their intersections. Only elementary methods are used, relying on first order perturbation/deformation theory. I then turn to the study of the family of cubic surfaces. They depend on 20 parameters, and the action of the 15 parameter group SL4 (C) splits the family in orbits depending on 5 parameters. This takes us into the realm of (geometric) invariant theory. I review briefly the classical theorems on the structure of the ring of polynomial invariants and illustrate its many facets by looking at a simple example, before turning to the already involved case of cubic surfaces. The invariant ring was described in the 19th century. I show how to retrieve this description via counting/generating functions and character formulae.

  16. Exact solutions for the cubic-quintic nonlinear Schroedinger equation

    Energy Technology Data Exchange (ETDEWEB)

    Zhu Jiamin [Department of Physics, Zhejiang Lishui University, Lishui 323000 (China)]. E-mail: zjm64@163.com; Ma Zhengyi [Department of Physics, Zhejiang Lishui University, Lishui 323000 (China); Institute of Applied Mathematics and Mechanics, Shanghai University, Shanghai 200072 (China)

    2007-08-15

    In this paper, the cubic-quintic nonlinear Schroedinger equation is solved through the extended elliptic sub-equation method. As a consequence, many types of exact travelling wave solutions are obtained which including bell and kink profile solitary wave solutions, triangular periodic wave solutions and singular solutions.

  17. Combinatorics on Words in Symbolic Dynamics: the Antisymmetric Cubic Map

    Institute of Scientific and Technical Information of China (English)

    Wan Ji DAI; Kebo L(U); Jun WANG

    2008-01-01

    This paper is contributed to the combinatorial properties of the periodic kneading words of antisymmetric cubic maps defined on a interval.The least words of given lengths,the adjacency relations on the words of given lengths and the parity-alternative property in some sets of such words are established.

  18. A Unified Approach to Teaching Quadratic and Cubic Equations.

    Science.gov (United States)

    Ward, A. J. B.

    2003-01-01

    Presents a simple method for teaching the algebraic solution of cubic equations via completion of the cube. Shows that this method is readily accepted by students already familiar with completion of the square as a method for quadratic equations. (Author/KHR)

  19. Orientational phase transition in cubic liquid crystals with positional order

    OpenAIRE

    Pokrovsky, V.L.; Saidachmetov, P.A.

    1988-01-01

    An electric field can give rise to a shear deformation of a cubic liquid crystal with long-range positional order fixed by two plates. The critical value of the field does not depend on the size of the system and depends crucially on the orientation.

  20. An effective packing density of binary cubic crystals

    Science.gov (United States)

    Eremin, I. E.; Eremina, V. V.; Sychev, M. S.; Moiseenko, V. G.

    2015-04-01

    The methodology of effective macroscopic calculation of numerical values of internuclear distances in binary crystals of a cubic crystal system is based on the use of coefficients of the structural packing density of the crystal lattice. The possibility of combining the reference data on the main physicochemical parameters of the substance is implemented by synthesis of the corresponding mathematical models.

  1. Trapping of cubic ZnO nanocrystallites at ambient conditions

    DEFF Research Database (Denmark)

    Decremps, F.; Pellicer-Porres, J.; Datchi, F.

    2002-01-01

    Dense powder of nanocrystalline ZnO has been recovered at ambient conditions in the metastable cubic structure after a heat treatment at high pressure (15 GPa and 550 K). Combined x-ray diffraction (XRD) and x-ray absorption spectroscopy (XAS) experiments have been performed to probe both long-ra...

  2. Specific heat of the simple-cubic Ising model

    NARCIS (Netherlands)

    Feng, X.; Blöte, H.W.J.

    2010-01-01

    We provide an expression quantitatively describing the specific heat of the Ising model on the simple-cubic lattice in the critical region. This expression is based on finite-size scaling of numerical results obtained by means of a Monte Carlo method. It agrees satisfactorily with series expansions

  3. Connecting the Dots Parametrically: An Alternative to Cubic Splines.

    Science.gov (United States)

    Hildebrand, Wilbur J.

    1990-01-01

    Discusses a method of cubic splines to determine a curve through a series of points and a second method for obtaining parametric equations for a smooth curve that passes through a sequence of points. Procedures for determining the curves and results of each of the methods are compared. (YP)

  4. Cubic spline approximation techniques for parameter estimation in distributed systems

    Science.gov (United States)

    Banks, H. T.; Crowley, J. M.; Kunisch, K.

    1983-01-01

    Approximation schemes employing cubic splines in the context of a linear semigroup framework are developed for both parabolic and hyperbolic second-order partial differential equation parameter estimation problems. Convergence results are established for problems with linear and nonlinear systems, and a summary of numerical experiments with the techniques proposed is given.

  5. Rheology of cubic particles suspended in a Newtonian fluid.

    Science.gov (United States)

    Cwalina, Colin D; Harrison, Kelsey J; Wagner, Norman J

    2016-05-18

    Many real-world industrial processes involve non-spherical particles suspended in a fluid medium. Knowledge of the flow behavior of these suspensions is essential for optimizing their transport properties and designing processing equipment. In the present work, we explore and report on the rheology of concentrated suspensions of cubic-shaped colloidal particles under steady and dynamic shear flow. These suspensions exhibit a rich non-Newtonian rheology that includes shear thickening and normal stress differences at high shear stresses. Scalings are proposed to connect the material properties of these suspensions of cubic particle to those measured for suspensions of spherical particles. Negative first normal stress differences indicate that lubrication hydrodynamic forces dominate the stress in the shear-thickened state. Accounting for the increased lubrication hydrodynamic interactions between the flat surfaces of the cubic particles allows for a quantitative comparison of the deviatoric stress in the shear-thickened state to that of spherical particles. New semi-empirical models for the viscosity and normal stress difference coefficients are presented for the shear-thickened state. The results of this study indicate that cubic particles offer new and unique opportunities to formulate colloidal dispersions for field-responsive materials.

  6. Infinite Face Centered Cubic Network of Identical Resistors

    CERN Document Server

    Asad, J H

    2012-01-01

    The equivalent resistance between the origin and any other lattice site, in an infinite Face Centered Cubic network consisting from identical resistors, has been expressed rationally in terms of the known value and . The asymptotic behavior is investigated, and some calculated values for the equivalent resistance are presented.

  7. Trace spaces in a pre-cubical complex

    DEFF Research Database (Denmark)

    Raussen, Martin

    In directed algebraic topology, (spaces of) directed irreversible (d)-paths are studied from a topological and from a categorical point of view. Motivated by models for concurrent computation, we study in this paper spaces of d-paths in a pre-cubical complex. Such paths are equipped with a natural...

  8. Morphosynthesis of cubic silver cages on monolithic activated carbon.

    Science.gov (United States)

    Wang, Fei; Zhao, Hong; Lai, Yijian; Liu, Siyu; Zhao, Binyuan; Ning, Yuesheng; Hu, Xiaobin

    2013-11-14

    Cubic silver cages were prepared on monolithic activated carbon (MAC) pre-absorbed with Cl(-), SO4(2-), or PO4(3-) anions. Silver insoluble salts served as templates for the morphosynthesis of silver cages. The silver ions were reduced by reductive functional groups on MAC micropores through a galvanic cell reaction mechanism.

  9. SUPERCONVERGENCE ANALYSIS FOR CUBIC TRIANGULAR ELEMENT OF THE FINITE ELEMENT

    Institute of Scientific and Technical Information of China (English)

    Qi-ding Zhu

    2000-01-01

    In this paper, we construct a projection interpolation for cubic triangular ele- ment by using othogonal expansion triangular method. We show two fundamental formulas of estimation on a special partion and obtain a superconvergence result of 1 -e order higher for the placement function and its tangential derivative on the third order Lobatto points and Gauss points on each edge of triangular element.

  10. Integrability of Lotka-Volterra Planar Complex Cubic Systems

    Science.gov (United States)

    Dukarić, Maša; Giné, Jaume

    In this paper, we study the Lotka-Volterra complex cubic systems. We obtain necessary conditions of integrability for these systems with some restriction on the parameters. The sufficiency is proved for all conditions, except one which remains open, using different methods.

  11. Global Well-Posedness for Cubic NLS with Nonlinear Damping

    KAUST Repository

    Antonelli, Paolo

    2010-11-04

    We study the Cauchy problem for the cubic nonlinear Schrödinger equation, perturbed by (higher order) dissipative nonlinearities. We prove global in-time existence of solutions for general initial data in the energy space. In particular we treat the energy-critical case of a quintic dissipation in three space dimensions. © Taylor & Francis Group, LLC.

  12. Comparing SiC switching power devices: MOSFET, NPN transistor and GTO thyristor

    Science.gov (United States)

    Huang, Alex Q.; Zhang, Bo

    2000-02-01

    This paper for the first time systematically analyzed the operation mechanism of SiC NPN transistors. Theoretical device figure-of-merits for switching power devices based on the conduction loss and switching loss were developed. The on-state loss and the switching loss of 4.5-kV SiC switching power devices (MOSFET, NPN transistor and GTO thyristor) were then compared by using theoretical and numerical calculations. Special emphasis is placed on comparing the total power loss of the devices at a given current density. Theoretical analyses and simulation results show that GTO thyristors have a large switching loss due to the long current tail at turn-off, hence restricting its maximum operation frequency. High voltage SiC MOSFETs have a large on-state power dissipation at high current levels due to the resistive nature of the drift region, restricting their applications at high current densities. SiC NPN transistors have a comparable switching loss as that of SiC MOSFETs, but at the same time, SiC NPN transistors have the lowest on-state loss. This study indicates that SiC NPN transistor is the most attractive switching power device at 4.5 kV.

  13. Application of rapid milling technology for fabrication of SiC nanoparticles.

    Science.gov (United States)

    Kim, Jong-Woong; Shim, Jae-Shik; Kwak, Min-Gi; Hong, Sung-Jei; Cho, Hyun-Min

    2013-09-01

    SiC nanoparticles were successfully fabricated by a high energy ball milling method, so that can be used in the printed electronics to make SiC thin film patterns. Here we utilized the waste of Si sludge for making the SiC nanoparticles. In order to achieve uniform thin film from the nanoparticle ink, fine sized SiC nanoparticles less than 100 nm has to be uniformly dispersed. In this study, we employed the ultra apex milling (UAM) system for particle comminution and dispersion. We investigated the effects of milling parameters, e.g., size of ZrO2 bead and milling time. The size of the SiC particles reached about 103 nm after 4 hours of UAM, when the ZrO2 beads of 50 microm were used. Then SiC ink was formulated with organic solvents and a dispersing agent. A specially designed pattern was printed by an ink-jet printer for evaluating the feasibility of the SiC nanoparticle inks.

  14. Additive Manufacturing of SiC Based Ceramics and Ceramic Matrix Composites

    Science.gov (United States)

    Halbig, Michael Charles; Singh, Mrityunjay

    2015-01-01

    Silicon carbide (SiC) ceramics and SiC fiber reinforcedSiC ceramic matrix composites (SiCSiC CMCs) offer high payoff as replacements for metals in turbine engine applications due to their lighter weight, higher temperature capability, and lower cooling requirements. Additive manufacturing approaches can offer game changing technologies for the quick and low cost fabrication of parts with much greater design freedom and geometric complexity. Four approaches for developing these materials are presented. The first two utilize low cost 3D printers. The first uses pre-ceramic pastes developed as feed materials which are converted to SiC after firing. The second uses wood containing filament to print a carbonaceous preform which is infiltrated with a pre-ceramic polymer and converted to SiC. The other two approaches pursue the AM of CMCs. The first is binder jet SiC powder processing in collaboration with rp+m (Rapid Prototyping+Manufacturing). Processing optimization was pursued through SiC powder blending, infiltration with and without SiC nano powder loading, and integration of nanofibers into the powder bed. The second approach was laminated object manufacturing (LOM) in which fiber prepregs and laminates are cut to shape by a laser and stacked to form the desired part. Scanning electron microscopy was conducted on materials from all approaches with select approaches also characterized with XRD, TGA, and bend testing.

  15. Effect of Ti and Si interlayer materials on the joining of SiC ceramics

    Energy Technology Data Exchange (ETDEWEB)

    Jung, Yang Il; Park, Jung Hwan; Kim, Hyun Gil; Park, Dong Jun; Park, Jeong Yong; Kim, Weon Ju [LWR Fuel Technology Division, Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

    2016-08-15

    SiC-based ceramic composites are currently being considered for use in fuel cladding tubes in light-water reactors. The joining of SiC ceramics in a hermetic seal is required for the development of ceramic-based fuel cladding tubes. In this study, SiC monoliths were diffusion bonded using a Ti foil interlayer and additional Si powder. In the joining process, a very low uniaxial pressure of ∼0.1 MPa was applied, so the process is applicable for joining thin-walled long tubes. The joining strength depended strongly on the type of SiC material. Reaction-bonded SiC (RB-SiC) showed a higher joining strength than sintered SiC because the diffusion reaction of Si was promoted in the former. The joining strength of sintered SiC was increased by the addition of Si at the Ti interlayer to play the role of the free Si in RB-SiC. The maximum joint strength obtained under torsional stress was ∼100 MPa. The joint interface consisted of TiSi{sub 2}, Ti{sub 3}SiC{sub 2}, and SiC phases formed by a diffusion reaction of Ti and Si.

  16. Tribological Behavior ofTi3SiC2-based Material

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    The wear and friction properties of Ti3SiC2-based materials were studied using the pin-on-disc method. The friction coefficient of Ti3SiC2-based material was not very sensitive to normal load, the steady state value, μ, increased from 0.4 to 0.5 when the normal load increased from 7.7 N to 14.7 N. The wear volume for Ti3SiC2 disc increased with increasing normal load or sliding distance in the tests. The average wear rate of Ti3SiC2-based material was 9.9×10-5 mm3/Nm. The debris on the Ti3SiC2 disc was essentially made up of Ti3SiC2 and steel pin materials,while the debris on the steel sliders was generally pi.n material. The wear mechanism was concluded as the fracture and delamination of Ti3SiC2-based materials followed by adhesive wear of steel sliders.

  17. Preparation and Microstructure of Cu/Ti3SiC2 Nanocomposite

    Institute of Scientific and Technical Information of China (English)

    GU Wan-li; SHENG Wen-bin; CHEN Zong-min

    2006-01-01

    Mixed micron-sized Cu/Ti3SiC2 (vol5%) powder was mechanically milled using agate balls and zirconia balls separately. Then followed an examination of it with the FEI-SEM. The experimental results show that, distributed homogenously in Cu matrix, the Ti3SiC2 particles have a size of about 30-50 nm after milled with agate balls for 8 h, while it remains approximately unchanged after milled with zirconia balls. The microstructure of the mixture at different ball-milling stages was also studied. Bulks of Cu/Ti3SiC2 nano-composite were fabricated by hot pressing nano-sized Cu/Ti3SiC2 powder at the temperature of 1 073 K under 100 MPa. Then came an investigation of the effects of the particle size and agglomerate state of Ti3SiC2 as well as the microstructure of Cu/Ti3SiC2 nano-composite. It was found that the nano-sized Ti3SiC2 particles distribute evenly in copper.

  18. Electronic properties of MoS{sub 2} on monolayer, bilayer and bulk SiC: A density functional theory study

    Energy Technology Data Exchange (ETDEWEB)

    Zan, Wenyan; Geng, Wei [State Key Laboratory of Applied Organic Chemistry, Department of Chemistry, Lanzhou University, Lanzhou 730000 (China); Liu, Huanxiang [School of Pharmacy, Lanzhou University, Lanzhou 730000 (China); Yao, Xiaojun, E-mail: xjyao@lzu.edu.cn [State Key Laboratory of Applied Organic Chemistry, Department of Chemistry, Lanzhou University, Lanzhou 730000 (China)

    2016-05-05

    The structure and electronic properties of MoS{sub 2} and SiC (single-layer SiC, double layer SiC, C-terminated SiC and Si-terminated SiC) composites were investigated by using density functional theory calculations. The calculation results show that the electronic properties of MoS{sub 2} are modified at different levels by combining with different thickness of SiC. The heterostructures (MoS{sub 2}/C-terminated SiC and MoS{sub 2}/Si-terminated SiC) possess larger binding energies than MoS{sub 2}/single-layer SiC and MoS{sub 2}/bilayer SiC, suggesting the higher stability for MoS{sub 2}/C-terminated SiC and MoS{sub 2}/Si-terminated SiC composites. It is found that charge transfer is from SiC to MoS{sub 2} in these heterostructures. MoS{sub 2}/single-layer SiC, MoS{sub 2}/double-layer SiC and MoS{sub 2}/C-terminated SiC are semiconductors, whereas MoS{sub 2}/Si-terminated SiC has no gap. - Highlights: • The structure and electronic properties of MoS{sub 2}/SiC composites were investigated. • The electronic property of MoS{sub 2} can be modulated by SiC with different thickness. • The MoS{sub 2}/Si-terminated SiC has higher stability than MoS{sub 2}/C-terminated SiC.

  19. SiC multi-layer protective coating on carbon obtained by thermionic vacuum arc method

    Science.gov (United States)

    Ciupina, V.; Lungu, C. P.; Vladoiu, R.; Epure, T.-D.; Prodan, G.; Roşca, C.; Porosnicu, C.; Jepu, I.; Belc, M.; Prodan, M.; Stanescu, I. M.; Stefanov, C.; Contulov, M.; Mandes, A.; Dinca, V.; Vasile, E.; Zarovschi, V.; Nicolescu, V.

    2013-09-01

    SiC single-layer or multi-layer on C used to improve the oxidation resistance and tribological properties of C have been obtained by Thermionic Vacuum Arc (TVA) method. The 200nm thickness carbon thin films was deposed on glass or Si substrate and then 100÷500 nm thickness SiC successively layers on carbon thin film was deposed. The microstructure and mechanical characteristics of as-prepared SiC coating were investigated by Transmission Electron Microscopy (TEM, STEM), Energy Dispersive X-Ray Spectroscopy (EDS), Electron Scattering Chemical Analysis (ESCA) and tribological techniques. Samples containing SiC single-layer or multi-layer coating on carbon were investigated up to 1000°C. The results of thermal treatments reveals the increase of oxidation resistance with increase of the number of SiC layers. The mechanism of oxidation protection is based on the reaction between SiC and elemental oxygen resulting SiO2 and CO. The tribological behavior of SiC coatings was evaluated with a tribometer with ball-on-disk configuration from CSM device with 6mm diameter sapphire ball, sliding speed in dry conditions being 0.2m/s, with normal contact loads of 0.5N, 1N, 1.5N and 2N, under unlubricated conditions. The friction coefficient on SiC was compared with the friction coefficient on uncoated carbon layer. Electrical surface resistance of SiC coating on carbon at different temperatures was measured comparing the potential drop on the sample with the potential drop on a series standard resistance in constant mode.

  20. Graphene nanoribbons anchored to SiC substrates

    Science.gov (United States)

    Le, Nam B.; Woods, Lilia M.

    2016-09-01

    Graphene nanoribbons are quasi-one-dimensional planar graphene allotropes with diverse properties dependent on their width and types of edges. Graphene nanoribbons anchored to substrates is a hybrid system, which offers novel opportunities for property modifications as well as experimental control. Here we present electronic structure calculations of zigzag graphene nanoribbons chemically attached via the edges to the Si or C terminated surfaces of a SiC substrate. The results show that the edge characteristics are rather robust and the properties are essentially determined by the individual nanoribbon. While the localized spin polarization of the graphene nanoribbon edge atoms is not significantly affected by the substrate, secondary energy gaps in the highest conduction and lowest valence region may emerge in the anchored structures. The van der Waals interaction together with the electrostatic interactions due to the polarity of the surface bonds are found to be important for the structure parameters and energy stability.

  1. Demonstration of SiC Pressure Sensors at 750 C

    Science.gov (United States)

    Okojie, Robert S.; Lukco, Dorothy; Nguyen, Vu; Savrun, Ender

    2014-01-01

    We report the first demonstration of MEMS-based 4H-SiC piezoresistive pressure sensors tested at 750 C and in the process confirmed the existence of strain sensitivity recovery with increasing temperature above 400 C, eventually achieving near or up to 100% of the room temperature values at 750 C. This strain sensitivity recovery phenomenon in 4H-SiC is uncharacteristic of the well-known monotonic decrease in strain sensitivity with increasing temperature in silicon piezoresistors. For the three sensors tested, the room temperature full-scale output (FSO) at 200 psig ranged between 29 and 36 mV. Although the FSO at 400 C dropped by about 60%, full recovery was achieved at 750 C. This result will allow the operation of SiC pressure sensors at higher temperatures, thereby permitting deeper insertion into the engine combustion chamber to improve the accurate quantification of combustor dynamics.

  2. Relativistic energies for the SiC radical

    Energy Technology Data Exchange (ETDEWEB)

    Jia, Chun-Sheng [Southwest Petroleum University, State Key Laboratory of Oil and Gas Reservoir Geology and Exploitation, Chengdu (China); Shui, Zheng-Wei [Southwest Petroleum University, School of Vocational and Technical Education, Nanchong (China)

    2015-11-15

    The analytical solutions of the Dirac equation with the modified Rosen-Morse potential energy model have been explored. Under the condition of the spin symmetry, we present the bound state energy equation. In the nonrelativistic limit, the relativistic energy equation becomes the nonrelativistic energy form deduced within the framework of the Schroedinger equation. We find that the relativistic effect of the relative motion of the ions leads to a little decrease in the vibrational energies when the vector potential is equal to the scalar potential for the electronic ground state of the SiC radical, while to an increase in those if the vector potential is greater than the scalar potential. (orig.)

  3. Incorporation of oxygen in SiC implanted with hydrogen

    Science.gov (United States)

    Barcz, A.; Jakieła, R.; Kozubal, M.; Dyczewski, J.; Celler, G. K.

    2015-12-01

    Oxygen accumulation at buried implantation-damage layers was studied after post-implantation annealing of hydrogen- or deuterium-implanted 4H-SiC. In this study H+ or 2H+ implantation was carried out at energies E, from 200 keV to 1 MeV, to fluences D, ranging from 2 × 1016/cm2 to 1 × 1017/cm2. For comparison, the implantation was also done into float-zone (FZ) and Czochralski (CZ) silicon wafers. Post-implantation annealing at temperatures from 400 °C to 1150 °C was performed either in pure argon or in a water vapor. Characterization methods included SIMS, RBS and TEM. At sufficiently high doses, hydrogen implantation into semiconductors leads to the irreversible formation of a planar zone of microcavities, bubbles and other extended defects located at the maximum of deposited energy. This kind of highly perturbed layer, containing large amounts of agglomerated hydrogen is known to efficiently getter a number of impurities. Oxygen was detected in both CZ and FZ silicon subjected to Smart-Cut™ processing. We have identified, by SIMS profiling, a considerable oxygen peak situated at the interface between the SiC substrate and a layer implanted with 1 × 1017 H ions/cm2 and heated to 1150 °C in either H2O vapor or in a nominally pure Ar. In view of a lack of convincing evidence that a hexagonal SiC might contain substantial amounts of oxygen, the objective of the present study was to identify the source and possible transport mechanism of oxygen species to the cavity band. Through the analysis of several implants annealed at various conditions, we conclude that, besides diffusion from the bulk or from surface oxides, an alternative path for oxygen agglomeration is migration of gaseous O2 or H2O from the edge of the sample through the porous layer.

  4. High temperature flow behaviour of SiC reinforced lithium aluminosilicate composites

    Indian Academy of Sciences (India)

    Santanu Das; V S R Murthy; G S Murty

    2001-04-01

    The compressive flow behaviour of lithium aluminosilicate (LAS) glass, with and without SiC particulate reinforcements, was studied. The LAS glass crystallized to spodumene during high-temperature testing. The flow behaviour of LAS glass changed from Newtonian to non-Newtonian due to the presence of crystalline phase. Further, with the addition of 40 vol.% SiC additions, the strain rate sensitivity of flow stress decreased. While the activation energy for flow in LAS was 300 kJ/mole, it increased to 995 kJ/mole with the addition of 40 vol.% SiC reinforcements.

  5. Effects of SiC and MgO on aluminabased ceramic foams filters

    Directory of Open Access Journals (Sweden)

    CAO Da-li

    2007-11-01

    Full Text Available Alumina-based foam ceramic filters were fabricated by using alumina, SiC, magnesia powder as major materials. It has been found that this ceramic filter has a uniform macrostructure for filtering molten metals. The influences of SiC and magnesia content, the sintering temperatures on ceramic properties were discussed. Aluminabased foam ceramic filters containing 2.2 mass% magnesia and 7.6 mass% SiC has a compressive strength of 1.36 MPa and a thermal shock resistance of 5 times. Its main phases after 1 hour sintering at 1 500 consist of alumina, silicon carbide, spinel and mullite.

  6. Electrical Impact of SiC Structural Crystal Defects on High Electric Field Devices (Invited)

    Science.gov (United States)

    Neudeck, Philip G.

    1999-01-01

    As illustrated by the invited paper at this conference and other works, SiC wafers and epilayers contain a variety of crystallographic imperfections, including micropipes, closed-core screw dislocations, grain boundaries, basal plane dislocations, heteropolytypic inclusions, and surfaces that are often damaged and contain atomically rough features like step bunching and growth pits or hillocks. Present understanding of the operational impact of various crystal imperfections on SiC electrical devices is reviewed, with an emphasis placed on high-field SiC power devices and circuits.

  7. High Speed Lapping of SiC Ceramic Material with Solid (Fixed) Abrasives

    Institute of Scientific and Technical Information of China (English)

    ZHANG Wei; YANG Xin-hong; SHANG Chun-min; HU Xiao-yong; HU Zhong-hui

    2005-01-01

    An experimental investigation is carried out to machine SiC ceramic material through the method of high speed plane lapping with solid(fixed) abrasives after the critical condition of brittle-ductile transition is theoretically analyzed. The results show that the material removal mechanism and the surface roughness are chiefly related to the granularity of abrasives for brittle materials such as SiC ceramic. It is easily realized to machine SiC ceramic in the ductile mode using W3.5 grit and a high efficiency, low cost and smooth surface with a surface roughness of Ra 2.4nm can be achieved.

  8. Exposure of epitaxial graphene on SiC(0001) to atomic hydrogen.

    Science.gov (United States)

    Guisinger, Nathan P; Rutter, Gregory M; Crain, Jason N; First, Phillip N; Stroscio, Joseph A

    2009-04-01

    Graphene films on SiC exhibit coherent transport properties that suggest the potential for novel carbon-based nanoelectronics applications. Recent studies suggest that the role of the interface between single layer graphene and silicon-terminated SiC can strongly influence the electronic properties of the graphene overlayer. In this study, we have exposed the graphitized SiC to atomic hydrogen in an effort to passivate dangling bonds at the interface, while investigating the results utilizing room temperature scanning tunneling microscopy.

  9. A route to strong p-doping of epitaxial graphene on SiC

    KAUST Repository

    Cheng, Yingchun

    2010-11-09

    The effects of Au intercalation on the electronic properties of epitaxialgraphenegrown on SiC{0001} substrates are studied using first principles calculations. A graphenemonolayer on SiC{0001} restores the shape of the pristine graphene dispersion, where doping levels between strongly n-doped and weakly p-doped can be achieved by altering the Au coverage. We predict that Au intercalation between the two C layers of bilayer graphenegrown on SiC{0001} makes it possible to achieve a strongly p-doped graphene state, where the p-doping level can be controlled by means of the Au coverage.

  10. The intensive terahertz electroluminescence induced by Bloch oscillations in SiC natural superlattices.

    Science.gov (United States)

    Sankin, Vladimir; Andrianov, Alexandr; Petrov, Alexey; Zakhar'in, Alexey; Lepneva, Ala; Shkrebiy, Pavel

    2012-10-09

    : We report on efficient terahertz (THz) emission from high-electric-field-biased SiC structures with a natural superlattice at liquid helium temperatures. The emission spectrum demonstrates a single line, the maximum of which shifts linearly with increases in bias field. We attribute this emission to steady-state Bloch oscillations of electrons in the SiC natural superlattice. The properties of the THz emission agree fairly with the parameters of the Bloch oscillator regime, which have been proven by high-field electron transport studies of SiC structures with natural superlattices.

  11. Thermoelastic stresses in SiC single crystals grown by the physical vapor transport method

    Institute of Scientific and Technical Information of China (English)

    Zibing Zhang; Jing Lu; Qisheng Chen; V.Prasad

    2006-01-01

    A finite element-based thermoelastic anisotropic stress model for hexagonal silicon carbide polytype is developed for the calculation of thermal stresses in SiC crystals grown by the physical vapor transport method.The composite structure of the growing SiC crystal and graphite lid is considered in the model.The thermal expansion match between the crucible lid and SiC crystal is studied for the first time.The influence of thermal stress on the dislocation density and crystal quality iS discussed.

  12. Effect of SiC particle size on the microstructure and properties of cold-sprayed Al/SiCp composite coating

    Science.gov (United States)

    Yu, Min; Hua, Junwei

    2017-07-01

    The Al5056/SiC composite coatings were prepared by cold spraying. Experimental results show that the SiC content in the composite coating deposited with the SiC powder having an average size of 67 μm (Al5056/SiC-67) is similar to that deposited with the SiC powder having an average size of 27 μm (Al5056/SiC-27). The microhardness and cohesion strength of Al5056/SiC-67 coating are higher than those of the Al5056/SiC-27 coating. In addition, the Al5056/SiC-67 coating having a superior wear resistance because of the coarse SiC powder with a superior kinetic energy contributes to the deformation resistance of the matrix Al5056 particles.

  13. D-region ion-neutral coupled chemistry (Sodankylä Ion Chemistry, SIC) within the Whole Atmosphere Community Climate Model (WACCM 4) - WACCM-SIC and WACCM-rSIC

    Science.gov (United States)

    Kovács, Tamás; Plane, John M. C.; Feng, Wuhu; Nagy, Tibor; Chipperfield, Martyn P.; Verronen, Pekka T.; Andersson, Monika E.; Newnham, David A.; Clilverd, Mark A.; Marsh, Daniel R.

    2016-09-01

    This study presents a new ion-neutral chemical model coupled into the Whole Atmosphere Community Climate Model (WACCM). The ionospheric D-region (altitudes ˜ 50-90 km) chemistry is based on the Sodankylä Ion Chemistry (SIC) model, a one-dimensional model containing 307 ion-neutral and ion recombination, 16 photodissociation and 7 photoionization reactions of neutral species, positive and negative ions, and electrons. The SIC mechanism was reduced using the simulation error minimization connectivity method (SEM-CM) to produce a reaction scheme of 181 ion-molecule reactions of 181 ion-molecule reactions of 27 positive and 18 negative ions. This scheme describes the concentration profiles at altitudes between 20 km and 120 km of a set of major neutral species (HNO3, O3, H2O2, NO, NO2, HO2, OH, N2O5) and ions (O2+, O4+, NO+, NO+(H2O), O2+(H2O), H+(H2O), H+(H2O)2, H+(H2O)3, H+(H2O)4, O3-, NO2-, O-, O2, OH-, O2-(H2O), O2-(H2O)2, O4-, CO3-, CO3-(H2O), CO4-, HCO3-, NO2-, NO3-, NO3-(H2O), NO3-(H2O)2, NO3-(HNO3), NO3-(HNO3)2, Cl-, ClO-), which agree with the full SIC mechanism within a 5 % tolerance. Four 3-D model simulations were then performed, using the impact of the January 2005 solar proton event (SPE) on D-region HOx and NOx chemistry as a test case of four different model versions: the standard WACCM (no negative ions and a very limited set of positive ions); WACCM-SIC (standard WACCM with the full SIC chemistry of positive and negative ions); WACCM-D (standard WACCM with a heuristic reduction of the SIC chemistry, recently used to examine HNO3 formation following an SPE); and WACCM-rSIC (standard WACCM with a reduction of SIC chemistry using the SEM-CM method). The standard WACCM misses the HNO3 enhancement during the SPE, while the full and reduced model versions predict significant NOx, HOx and HNO3 enhancements in the mesosphere during solar proton events. The SEM-CM reduction also identifies the important ion-molecule reactions that affect the partitioning of

  14. Experimental determination of grain density function of AZ91/SiC composite with different mass fractions of SiC and undercoolings using heterogeneous nucleation model

    Directory of Open Access Journals (Sweden)

    J. Lelito

    2011-02-01

    Full Text Available The grain density, Nv, in the solid state after solidification of AZ91/SiC composite is a function of maximum undercooling, ΔT, of a liquid alloy. This type of function depends on the characteristics of heterogeneous nucleation sites and number of SiC present in the alloy. The aim of this paper was selection of parameters for the model describing the relationship between the grain density of primary phase and undercooling. This model in connection with model of crystallisation, which is based on chemical elements diffusion and grain interface kinetics, can be used to predict casting quality and its microstructure. Nucleation models have parameters, which exact values are usually not known and sometimes even their physical meaning is under discussion. Those parameters can be obtained after mathematical analysis of the experimental data. The composites with 0, 1, 2, 3 and 4wt.% of SiC particles were prepared. The AZ91 alloy was a matrix of the composite reinforcement SiC particles. This composite was cast to prepare four different thickness plates.They were taken from the region near to the thermocouple, to analyze the undercooling for different composites and thickness plates and its influence on the grain size. The microstructure and thermal analysis gave set of values that connect mass fraction of SiC particles, and undercooling with grain size. These values were used to approximate nucleation model adjustment parameters. Obtained model can be very useful in modelling composites microstructure.

  15. Mechanical Spectroscopy of MgB2 Containing Sic / Spektroskopia Mechaniczna MgB2 Zawierającego Sic

    Directory of Open Access Journals (Sweden)

    Silva M.R.

    2015-12-01

    Full Text Available The compound magnesium diboride (MgB2 has been well-known since the 1950s; however, its superconducting properties were unknown. Intrinsic characteristics of MgB2 make this material a promising candidate for technological applications, although the low value of the irreversibility field and the decrease in critical current density with the increase in the magnetic field considerably reduce its utility. The present work aimed to study the effect of carbon-based doping on anelastic properties of MgB2 as measured by mechanical spectroscopy. The samples were prepared by using the powder-intube method. The samples were made with 5, 7.5, and 10 wt.% of silicon carbide (SiC. The results reveal complex mechanical loss spectra caused by the interaction between point defects and surface defects in the crystalline lattice of MgB2.

  16. Fabrication of mullite-bonded porous SiC ceramics from multilayer-coated SiC particles through sol-gel and in-situ polymerization techniques

    Science.gov (United States)

    Ebrahimpour, Omid

    In this work, mullite-bonded porous silicon carbide (SiC) ceramics were prepared via a reaction bonding technique with the assistance of a sol-gel technique or in-situ polymerization as well as a combination of these techniques. In a typical procedure, SiC particles were first coated by alumina using calcined powder and alumina sol via a sol-gel technique followed by drying and passing through a screen. Subsequently, they were coated with the desired amount of polyethylene via an in-situ polymerization technique in a slurry phase reactor using a Ziegler-Natta catalyst. Afterward, the coated powders were dried again and passed through a screen before being pressed into a rectangular mold to make a green body. During the heating process, the polyethylene was burnt out to form pores at a temperature of about 500°C. Increasing the temperature above 800°C led to the partial oxidation of SiC particles to silica. At higher temperatures (above 1400°C) derived silica reacted with alumina to form mullite, which bonds SiC particles together. The porous SiC specimens were characterized with various techniques. The first part of the project was devoted to investigating the oxidation of SiC particles using a Thermogravimetric analysis (TGA) apparatus. The effects of particle size (micro and nano) and oxidation temperature (910°C--1010°C) as well as the initial mass of SiC particles in TGA on the oxidation behaviour of SiC powders were evaluated. To illustrate the oxidation rate of SiC in the packed bed state, a new kinetic model, which takes into account all of the diffusion steps (bulk, inter and intra particle diffusion) and surface oxidation rate, was proposed. Furthermore, the oxidation of SiC particles was analyzed by the X-ray Diffraction (XRD) technique. The effect of different alumina sources (calcined Al2O 3, alumina sol or a combination of the two) on the mechanical, physical, and crystalline structure of mullite-bonded porous SiC ceramics was studied in the

  17. Cubic ideal ferromagnets at low temperature and weak magnetic field

    Science.gov (United States)

    Hofmann, Christoph P.

    2017-04-01

    The low-temperature series for the free energy density, pressure, magnetization and susceptibility of cubic ideal ferromagnets in weak external magnetic fields are discussed within the effective Lagrangian framework up to three loops. The structure of the simple, body-centered, and face-centered cubic lattice is taken into account explicitly. The expansion involves integer and half-integer powers of the temperature. The corresponding coefficients depend on the magnetic field and on low-energy effective constants that can be expressed in terms of microscopic quantities. Our formulas may also serve as efficiency or consistency check for other techniques like Green's function methods, where spurious terms in the low-temperature expansion have appeared. We explore the sign and magnitude of the spin-wave interaction in the pressure, magnetization and susceptibility, and emphasize that our effective field theory approach is fully systematic and rigorous.

  18. Counting real cubics with passage/tangency conditions

    CERN Document Server

    Lanzat, Sergei

    2010-01-01

    We study the following question: given a set of seven points and an immersed curve in the real plane R^2, all in general position, how many real rational nodal plane cubics pass through these points and are tangent to this curve. We count each such cubic with a certain sign, and present an explicit formula for their algebraic number. This number is preserved under small regular homotopies of the curve, but jumps (in a well-controlled way) when in the process of homotopy we pass a certain singular discriminant. We discuss the relation of such enumerative problems with finite type invariants. Our approach is based on maps of configuration spaces and the intersection theory in the spirit of classical algebraic topology.

  19. Reversible Nanoparticle Cubic Lattices in Blue Phase Liquid Crystals.

    Science.gov (United States)

    Gharbi, Mohamed Amine; Manet, Sabine; Lhermitte, Julien; Brown, Sarah; Milette, Jonathan; Toader, Violeta; Sutton, Mark; Reven, Linda

    2016-03-22

    Blue phases (BPs), a distinct class of liquid crystals (LCs) with 3D periodic ordering of double twist cylinders involving orthogonal helical director twists, have been theoretically studied as potential templates for tunable colloidal crystals. Here, we report the spontaneous formation of thermally reversible, cubic crystal nanoparticle (NP) assemblies in BPs. Gold NPs, functionalized to be highly miscible in cyanobiphenyl-based LCs, were dispersed in BP mixtures and characterized by polarized optical microscopy and synchrotron small-angle X-ray scattering (SAXS). The NPs assemble by selectively migrating to periodic strong trapping sites in the BP disclination lines. The NP lattice, remarkably robust given the small particle size (4.5 nm diameter), is commensurate with that of the BP matrix. At the BP I to BP II phase transition, the NP lattice reversibly switches between two different cubic structures. The simultaneous presence of two different symmetries in a single material presents an interesting opportunity to develop novel dynamic optical materials.

  20. Highly Aminated Mesoporous Silica Nanoparticles with Cubic Pore Structure

    KAUST Repository

    Suteewong, Teeraporn

    2011-01-19

    Mesoporous silica with cubic symmetry has attracted interest from researchers for some time. Here, we present the room temperature synthesis of mesoporous silica nanoparticles possessing cubic Pm3n symmetry with very high molar ratios (>50%) of 3-aminopropyl triethoxysilane. The synthesis is robust allowing, for example, co-condensation of organic dyes without loss of structure. By means of pore expander molecules, the pore size can be enlarged from 2.7 to 5 nm, while particle size decreases. Adding pore expander and co-condensing fluorescent dyes in the same synthesis reduces average particle size further down to 100 nm. After PEGylation, such fluorescent aminated mesoporous silica nanoparticles are spontaneously taken up by cells as demonstrated by fluorescence microscopy.

  1. The Piecewise Cubic Method (PCM) for computational fluid dynamics

    Science.gov (United States)

    Lee, Dongwook; Faller, Hugues; Reyes, Adam

    2017-07-01

    We present a new high-order finite volume reconstruction method for hyperbolic conservation laws. The method is based on a piecewise cubic polynomial which provides its solutions a fifth-order accuracy in space. The spatially reconstructed solutions are evolved in time with a fourth-order accuracy by tracing the characteristics of the cubic polynomials. As a result, our temporal update scheme provides a significantly simpler and computationally more efficient approach in achieving fourth order accuracy in time, relative to the comparable fourth-order Runge-Kutta method. We demonstrate that the solutions of PCM converges at fifth-order in solving 1D smooth flows described by hyperbolic conservation laws. We test the new scheme on a range of numerical experiments, including both gas dynamics and magnetohydrodynamics applications in multiple spatial dimensions.

  2. The Piecewise Cubic Method (PCM) for Computational Fluid Dynamics

    CERN Document Server

    Lee, Dongwook; Reyes, Adam

    2016-01-01

    We present a new high-order finite volume reconstruction method for hyperbolic conservation laws. The method is based on a piecewise cubic polynomial which provides its solutions a fifth-order accuracy in space. The spatially reconstructed solutions are evolved in time with a fourth-order accuracy by tracing the characteristics of the cubic polynomials. As a result, our temporal update scheme provides a significantly simpler and computationally more efficient approach in achieving fourth order accuracy in time, relative to the comparable fourth-order Runge-Kutta method. We demonstrate that the solutions of PCM converges in fifth-order in solving 1D smooth flows described by hyperbolic conservation laws. We test the new scheme in a range of numerical experiments, including both gas dynamics and magnetohydrodynamics applications in multiple spatial dimensions.

  3. Cubic Composite Sensor with Photodiodes for Tracking Solar Orientation

    Directory of Open Access Journals (Sweden)

    Yong-Nong Chang

    2013-01-01

    Full Text Available A cubic composite solar sensor with photo diode is proposed for tracking the relative solar orientation. The proposed solar sensor composes of five photodiode detectors which are placed on the front, rear, left, right, and horizontal facets in a cubic body, respectively. The solar detectors placed on five facets can detect solar power of different facets. Based on the geometric coordinate transformation principle, the relationship equations of solar light orientation between measured powers with respect to various facets can be conducted. As a result, the solar orientation can be precisely achieved without needing any assistance of electronic compass and extra orientation angle corrector. Eventually, the relative solar light orientation, the elevation angle, and azimuth angle of the solar light can be measured precisely.

  4. Nonlinear optical imaging of defects in cubic silicon carbide epilayers.

    Science.gov (United States)

    Hristu, Radu; Stanciu, Stefan G; Tranca, Denis E; Matei, Alecs; Stanciu, George A

    2014-06-11

    Silicon carbide is one of the most promising materials for power electronic devices capable of operating at extreme conditions. The widespread application of silicon carbide power devices is however limited by the presence of structural defects in silicon carbide epilayers. Our experiment demonstrates that optical second harmonic generation imaging represents a viable solution for characterizing structural defects such as stacking faults, dislocations and double positioning boundaries in cubic silicon carbide layers. X-ray diffraction and optical second harmonic rotational anisotropy were used to confirm the growth of the cubic polytype, atomic force microscopy was used to support the identification of silicon carbide defects based on their distinct shape, while second harmonic generation microscopy revealed the detailed structure of the defects. Our results show that this fast and noninvasive investigation method can identify defects which appear during the crystal growth and can be used to certify areas within the silicon carbide epilayer that have optimal quality.

  5. Global Sufficient Optimality Conditions for a Special Cubic Minimization Problem

    Directory of Open Access Journals (Sweden)

    Xiaomei Zhang

    2012-01-01

    Full Text Available We present some sufficient global optimality conditions for a special cubic minimization problem with box constraints or binary constraints by extending the global subdifferential approach proposed by V. Jeyakumar et al. (2006. The present conditions generalize the results developed in the work of V. Jeyakumar et al. where a quadratic minimization problem with box constraints or binary constraints was considered. In addition, a special diagonal matrix is constructed, which is used to provide a convenient method for justifying the proposed sufficient conditions. Then, the reformulation of the sufficient conditions follows. It is worth noting that this reformulation is also applicable to the quadratic minimization problem with box or binary constraints considered in the works of V. Jeyakumar et al. (2006 and Y. Wang et al. (2010. Finally some examples demonstrate that our optimality conditions can effectively be used for identifying global minimizers of the certain nonconvex cubic minimization problem.

  6. Plasma simulation with the Differential Algebraic Cubic Interpolated Propagation scheme

    Energy Technology Data Exchange (ETDEWEB)

    Utsumi, Takayuki [Japan Atomic Energy Research Inst., Tokai, Ibaraki (Japan). Tokai Research Establishment

    1998-03-01

    A computer code based on the Differential Algebraic Cubic Interpolated Propagation scheme has been developed for the numerical solution of the Boltzmann equation for a one-dimensional plasma with immobile ions. The scheme advects the distribution function and its first derivatives in the phase space for one time step by using a numerical integration method for ordinary differential equations, and reconstructs the profile in phase space by using a cubic polynomial within a grid cell. The method gives stable and accurate results, and is efficient. It is successfully applied to a number of equations; the Vlasov equation, the Boltzmann equation with the Fokker-Planck or the Bhatnagar-Gross-Krook (BGK) collision term and the relativistic Vlasov equation. The method can be generalized in a straightforward way to treat cases such as problems with nonperiodic boundary conditions and higher dimensional problems. (author)

  7. Quantum spectra and classical periodic orbit in the cubic billiard

    Institute of Scientific and Technical Information of China (English)

    Dehua Wang; Yongjiang Yu; Shenglu Lin

    2006-01-01

    Quantum billiards have attracted much interest in many fields. People have made a lot of researches on the two-dimensional (2D) billiard systems. Contrary to the 2D billiard, due to the complication of its classical periodic orbits, no one has studied the correspondence between the quantum spectra and the classical orbits of the three-dimensional (3D) billiards. Taking the cubic billiard as an example, using the periodic orbit theory, we find the periodic orbit of the cubic billiard and study the correspondence between the quantum spectra and the length of the classical orbits in 3D system. The Fourier transformed spectrum of this system has allowed direct comparison between peaks in such plot and the length of the periodic orbits, which verifies the correctness of the periodic orbit theory. This is another example showing that semiclassical method provides a bridge between quantum and classical mechanics.

  8. Quantum Phase Transitions in Anti-ferromagnetic Planar Cubic Lattices

    CERN Document Server

    Wellard, C J; Wellard, Cameron; Orus, Roman

    2004-01-01

    Motivated by its relation to an NP-hard problem we analyze the ground state properties of anti-ferromagnetic Ising-spin networks in planar cubic lattices under the action of homogeneous transverse and longitudinal magnetic fields. We consider different instances of the cubic geometry and find a set of quantum phase transitions for each one of the systems, which we characterize by means of entanglement behavior and majorization theory. Entanglement scaling at the critical region is in agreement with results arising from conformal symmetry, therefore even the simplest planar systems can display very large amounts of quantum correlation. No conclusion can be made as to the scaling behavior of the minimum energy gap, with the data allowing equally good fits to exponential and power law decays. Analysis of entanglement and especially of majorization instead of the energy spectrum proves to be a good way of detecting quantum phase transitions in highly frustrated configurations.

  9. Higher-Order Approximation of Cubic-Quintic Duffing Model

    DEFF Research Database (Denmark)

    Ganji, S. S.; Barari, Amin; Babazadeh, H.

    2011-01-01

    We apply an Artificial Parameter Lindstedt-Poincaré Method (APL-PM) to find improved approximate solutions for strongly nonlinear Duffing oscillations with cubic-quintic nonlinear restoring force. This approach yields simple linear algebraic equations instead of nonlinear algebraic equations...... without analytical solution which makes it a unique solution. It is demonstrated that this method works very well for the whole range of parameters in the case of the cubic-quintic oscillator, and excellent agreement of the approximate frequencies with the exact one has been observed and discussed....... Moreover, it is not limited to the small parameter such as in the classical perturbation method. Interestingly, this study revealed that the relative error percentage in the second-order approximate analytical period is less than 0.042% for the whole parameter values. In addition, we compared...

  10. 3D Medical Image Interpolation Based on Parametric Cubic Convolution

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    In the process of display, manipulation and analysis of biomedical image data, they usually need to be converted to data of isotropic discretization through the process of interpolation, while the cubic convolution interpolation is widely used due to its good tradeoff between computational cost and accuracy. In this paper, we present a whole concept for the 3D medical image interpolation based on cubic convolution, and the six methods, with the different sharp control parameter, which are formulated in details. Furthermore, we also give an objective comparison for these methods using data sets with the different slice spacing. Each slice in these data sets is estimated by each interpolation method and compared with the original slice using three measures: mean-squared difference, number of sites of disagreement, and largest difference. According to the experimental results, we present a recommendation for 3D medical images under the different situations in the end.

  11. Experimental core electron density of cubic boron nitride

    DEFF Research Database (Denmark)

    Wahlberg, Nanna; Bindzus, Niels; Bjerg, Lasse

    candidate because of its many similarities with diamond: bonding pattern in the extended network structure, hardness, and the quality of the crystallites.3 However, some degree ionic interaction is a part of the bonding in boron nitride, which is not present in diamond. By investigating the core density...... beyond multipolar modeling of the valence density. As was recently shown in a benchmark study of diamond by Bindzus et al.1 The next step is to investigate more complicated chemical bonding motives, to determine the effect of bonding on the core density. Cubic boron nitride2 lends itself as a perfect...... in boron nitride we may obtain a deeper understanding of the effect of bonding on the total density. We report here a thorough investigation of the charge density of cubic boron nitride with a detailed modelling of the inner atom charge density. By combining high resolution powder X-ray diffraction data...

  12. Switching Investigations on a SiC MOSFET in a TO-247 Package

    DEFF Research Database (Denmark)

    Anthon, Alexander; Hernandez Botella, Juan Carlos; Zhang, Zhe

    2014-01-01

    This paper deals with the switching behavior of a SiC MOSFET in a TO-247 package. Based on simulations, critical parasitic inductances in the circuit layout are analyzed and their effect on the switching losses highlighted. Especially the common source inductance, a critical parameter in a TO-247...... package, has a major influence on the switching energy. Crucial design guidelines for an improved double pulse test circuit are introduced which are used for practical investigations on the switching behavior. Switching energies of a SiC MOSFET in a TO-247 package is measured depending on varying gate...... resistance and loop inductances. With total switching energy of 340.24 μJ, the SiC MOSFET has more than six times lower switching losses than a regular Si IGBT. Implementing the SiC switches in a 3 kW T-Type inverter topology, efficiency improvements of 0.8 % are achieved and maximum efficiency of 97...

  13. Selective Growth of Graphene by Pulsed Laser Annealing Ion Implanted SiC

    Science.gov (United States)

    Berke, Kara; Wang, Xiaotie; Rudawski, Nick; Venkatachalam, Dinesh; Fridmann, Joel; Gila, Brent; Ren, Fan; Elliman, Rob; Hebard, Arthur; Appleton, Bill

    2014-03-01

    We report a method for site-selective graphene growth on SiC for direct nano-scale patterning of graphene. Crystalline SiC was implanted with Si and C ions to amorphize the sample surface, then subjected to pulsed laser annealing (PLA); graphene growth occurred only where ions were implanted. PLA parameters including the fluence, number of pulses, and annealing environment were investigated to optimize the growth process. Our previous work involving Au, Cu, and Ge implants in SiC suggested that both the implanted species and surface amorphization affect graphene growth. In this work, we show that surface amorphization alone, without the presence of foreign ionic species, can be used with PLA to create site-selective graphene growth on SiC. Samples were characterized using Raman spectroscopy and cross-sectional transmission electron microscopy. also affiliated with Raith USA, Incorporated.

  14. Numerical design of SiC bulk crystal growth for electronic applications

    Science.gov (United States)

    Wejrzanowski, T.; Grybczuk, M.; Tymicki, E.; Kurzydlowski, K. J.

    2014-10-01

    Presented study concerns numerical simulation of Physical Vapor Transport (PVT) growth of bulk Silicon Carbide (SiC) crystals. Silicon Carbide is a wide band gap semiconductor, with numerous applications due to its unique properties. Wider application of SiC is limited by high price and insufficient quality of the product. Those problems can be overcame by optimizing SiC production methods. Experimental optimization of SiC production is expensive because it is time consuming and requires large amounts of energy. Numerical modeling allows to learn more about conditions inside the reactor and helps to optimize the process at much lower cost. In this study several simulations of processes with different reactor geometries were presented along with discussion of reactor geometry influence on obtained monocrystal shape and size.

  15. Fabrication of SiC nanowire thin-film transistors using dielectrophoresis

    Institute of Scientific and Technical Information of China (English)

    Dai Zhenqing; Zhang Liying; Chen Changxin; Qian Bingjian; Xu Dong; Chen Haiyan; Wei Liangming; Zhang Yafei

    2012-01-01

    The selection of solvents for SiC nanowires (NWs) in a dielectrophoretic process is discussed theoretically and experimentally.From the viewpoints of dielectrophoresis force and torque,volatility,as well as toxicity,isopropanol (IPA) is considered as a proper candidate.By using the dielectrophoretic process,SiC NWs are aligned and NW thin films are prepared.The densities of the aligned SiC NWs are 2 μm-1,4 μm-1,6 μm-1,which corresponds to SiC NW concentrations of 0.1 μg/μL,0.3μg/μL and 0.5 μg/μL,respectively.Thin-film transistors are fabricated based on the aligned SiC NWs of 6 μm-1.The mobility of a typical device is estimated to be 13.4 cm2/(V.s).

  16. SUPERPOLISHED SI COATED SIC OPTICS FOR RAPID MANUFACTURE OF LARGE APERTURE UV AND EUV TELESCOPES Project

    Data.gov (United States)

    National Aeronautics and Space Administration — SSG/Tinsley proposes an innovative optical manufacturing process that will allow the advancement of state-of-the-art Silicon Carbide (SiC) mirrors for large aperture...

  17. Ultra-Lightweight, High Efficiency Silicon-Carbide (SIC) Based Power Electronic Converters Project

    Data.gov (United States)

    National Aeronautics and Space Administration — This Small Business of Innovation Research Phase I proposal seeks to investigate and prove the feasibility of developing highly efficient, ultra-lightweight SiC...

  18. Large area SiC coating technology of RBSC for semiconductor processing component

    Energy Technology Data Exchange (ETDEWEB)

    Park, Ji Yeon; Kim, Weon Ju

    2001-06-01

    As the semiconductor process is developed for the larger area wafer and the larger-scale integration, the processing fixtures are required to have excellent mechanical and high temperature properties. This highlights the importance of silicon carbide-based materials as a substitute for quartz-based susceptors. In this study, SiC coating technology on reaction sintered (RS) SiC with thickness variation of +/- 10% within a diameter of 8 inch by low pressure chemical vapor deposition has been developed for making a plate type SiC fixture such as heater, baffle, etc., with a diameter of 12 inch. Additionally, a state of art on fabrication technology and products of the current commercial SiC fixtures has been described.

  19. Carbon Nanotube (CNT) and Carbon Fiber Reinforced SiC Optical Components Project

    Data.gov (United States)

    National Aeronautics and Space Administration — M Cubed has developed and patented technology to make carbon fiber reinforced SiC composites and components. In addition, the feasibility of doubling the toughness...

  20. Synthesis and characteristics of SiC whiskers with "rosary bead" morphology

    Institute of Scientific and Technical Information of China (English)

    Xian Jia; Xiaomei Ling

    2004-01-01

    SiC whiskers with ″rosary bead″ morphology were synthesized using suitable silicon source and carbon source through solid reaction at the temperature above 1537 K. The diameter and length of the SiC whiskers were about 0.1-1.0 μm and 20-100 μm,respectively. The largest diameter of their enlarged ends of the whiskers was about 0.2-1.0 μm, and it gradually and smoothly decreased to the size of the plain part of the whiskers. The results of X-ray diffraction analysis show that the crystalline structure of the obtained SiC whiskers is β-SiC. It is considered that the SiC whiskers grow via a vapor-solid mechanism.

  1. Visible Blind SiC Array with Low Noise Readout Project

    Data.gov (United States)

    National Aeronautics and Space Administration — To date, we have (i) designed and fabricated both common cathode and common anode SiC detector arrays; (ii) designed and fabricated the detector packaging (FPA), and...

  2. Optical properties in 1D photonic crystal structure using Si/C60 multilayers

    Institute of Scientific and Technical Information of China (English)

    Chen Jing; Tang Jiyu; Han Peide; Chen Junfang

    2009-01-01

    The feasibility of using Si/C60 mulfilayer films as one-dimensional(1D)photonie band gap crystals was investigated by theoretical calculations using a transfer matrix method(TMM).The response has been studied both within and out of the periodic plane of Si/C60 multilayers.It is found that Si/C60 multilayer films show incomplete photonic band gap(PBG)behavior in the visible frequency range.The fabricated Si/C60 multilayers with two pairs of 70 am C60 and 30 nm Si layers exhibit a PBG at central wavelength of about 600 nm.and the highest reflectivity call reach 99%.As a consequence,this photonic crystal may be important for fabricating a photonic crystal with an incomplete band gap in the visible frequency range.

  3. Identification of -SiC surrounded by relatable surrounding diamond medium using weak Raman surface phonons

    Indian Academy of Sciences (India)

    Mohan Kumar Kuntumalla; Harish Ojha; Vadali Venkata Satya Siva Srikanth

    2013-11-01

    It is difficult to detect -SiC using micro-Raman scattering, if it is surrounded by carbon medium. Here, -SiC is identified in the presence of a relatable surrounding diamond medium using subtle, but discernible Raman surface phonons. In this study, diamond/-SiC nanocomposite thin film system is considered in which nanosized -SiC crystallites are surrounded by a relatable nanodiamond medium that leads to the appearance of a weak Raman surface phonon band at about 855 cm-1. Change in the nature of the surrounding material structure and its volume content when relatable, will affect the resultant Raman response of -SiC phase as seen in the present case of diamond/-SiC nanocomposite thin films.

  4. Decentralized Nonlinear Controller Based SiC Parallel DC-DC Converter Project

    Data.gov (United States)

    National Aeronautics and Space Administration — This proposal is aimed at demonstrating the feasibility of a Decentralized Control based SiC Parallel DC-DC Converter Unit (DDCU) with targeted application for...

  5. Breakthrough in Power Electronics from SiC: May 25, 2004 - May 31, 2005

    Energy Technology Data Exchange (ETDEWEB)

    Marckx, D. A.

    2006-03-01

    This report explores the premise that silicon carbide (SiC) devices would reduce substantially the cost of energy of large wind turbines that need power electronics for variable speed generation systems.

  6. Hybrid surface structures for efficiency enhancement of fluorescent SiC for white LED application

    DEFF Research Database (Denmark)

    Ou, Yiyu; Xiong, Meng; Lu, Weifang

    Hybrid structures contain structures in both micro- and nano-meter scale have been fabricated on fluorescent SiC by applying a fast fabrication method. Luminescence efficiency of f-SiC was enhanced significantly compared with normal nanostructures....

  7. Toxicity assessment of SiC nanofibers and nanorods against bacteria.

    Science.gov (United States)

    Szala, Mateusz; Borkowski, Andrzej

    2014-02-01

    In the present study, evidence of the antibacterial effects of silicon carbide (SiC) nanofibers (NFSiC) and nanorods (NRSiC) obtained by combustion synthesis has been presented. It has been shown that the examined bacteria, Pseudomonas putida, could bind to the surface of the investigated SiC nanostructures. The results of respiration measurements, dehydrogenase activity measurements, and evaluation of viable bacteria after incubation with NFSiC and NRSiC demonstrated that the nanostructures of SiC affect the growth and activity of the bacteria examined. The direct count of bacteria stained with propidium iodide after incubation with SiC nanostructures revealed that the loss of cell membrane integrity could be one of the main effects leading to the death of the bacteria.

  8. Silicon Carbide (SiC) Power Processing Unit (PPU) for Hall Effect Thrusters Project

    Data.gov (United States)

    National Aeronautics and Space Administration — In this SBIR project, APEI, Inc. is proposing to develop a high efficiency, rad-hard 3.8 kW silicon carbide (SiC) Power Processing Unit (PPU) for Hall Effect...

  9. Ultra-Lightweight, High Efficiency Silicon-Carbide (SIC) Based Power Electronic Converters Project

    Data.gov (United States)

    National Aeronautics and Space Administration — In Phase I of this project, APEI, Inc. proved the feasibility of creating ultra-lightweight power converters (utilizing now emerging silicon carbide [SiC] power...

  10. Synthesis of One-Dimensional SiC Nanostructures from a Glassy Buckypaper

    Energy Technology Data Exchange (ETDEWEB)

    Ding, Mengning; Star, Alexander

    2013-02-21

    A simple and scalable synthetic strategy was developed for the fabrication of one-dimensional SiC nanostructures - nanorods and nanowires. Thin sheets of single-walled carbon nanotubes (SWNTs) were prepared by vacuum filtration and were washed repeatedly with sodium silicate (Na₂SiO₃) solution. The resulting “glassy buckypaper” was heated at 1300 - 1500 °C under Ar/H₂ to allow a solid state reaction between C and Si precursors to form a variety of SiC nanostructures. The morphology and crystal structures of SiC nanorods and nanowires were characterized using scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HR-TEM), energy dispersive xray spectroscopy (EDX), electron diffraction (ED) and x-ray diffraction (XRD) techniques. Furthermore, electrical conductance measurements were performed on SiC nanorods, demonstrating their potential applications in high-temperature sensors and control systems.

  11. Current Status in Layered Ternary Carbide Ti3SiC2, a Review

    Institute of Scientific and Technical Information of China (English)

    H.B.Zhang; Y.W.Bao; Y.C.Zhou

    2009-01-01

    This article provides a review of current research activities that concentrate on Ti3SiC2. We begin with an overview of the crystal and electronic structures, which are the basis to understand this material. Followings are the synthetic strategies that have been exploited to achieve, and the formation mechanism of Ti3SiC2. Then we devote much attentions to the mechanical properties and oxidation/hot corrosion behaviors of Ti3SiC2 as well as some advances achieved recently. At the end of this paper, we elaborate on some new discoveries in the Ti3SiC2 system, and also give a brief discussion focused on the "microstructure -property" relationship.

  12. Study of indentation induced cracks in MoSi2-reaction bonded SiC ceramics

    Indian Academy of Sciences (India)

    O P Chakrabarti; P K Das; S Mondal

    2001-04-01

    MoSi2–RBSC composite samples were prepared by infiltration of Si–2 at.% Mo melt into a preform of commercial SiC and petroleum coke powder. The infiltrated sample had a density > 92% of the theoretical density (TD) and microstructurally contained SiC, MoSi2, residual Si and unreacted C. The material was tested for indentation fracture toughness at room temperature with a Vicker’s indenter and KIC was found to be 4.42 MPa√m which is around 39% higher than the conventional RBSC material. Enhancement in indentation fracture toughness is explained in terms of bowing of propagating cracks through MoSi2/SiC interface which is under high thermal stress arising from the thermal expansion mismatch between MoSi2 and SiC.

  13. Analysis on partial thermal resistances of packaged SiC schottky barrier diodes at elevated temperatures

    Science.gov (United States)

    Kim, Taehwa; Funaki, Tsuyoshi

    2016-04-01

    This paper investigates the temperature dependence of partial thermal resistances of a packaged SiC schottky barrier diode (SBD) for high temperature applications. Transient thermal resistances of the packaged SiC SBD were measured and characterized in temperature range from 27 to 275 °C. The partial thermal resistances were extracted and analyzed using the cumulative and differential thermal structure functions. The extracted partial thermal resistances were compared to the results from the finite difference thermal model, and both results were in good agreement. The temperature dependence of the partial thermal resistance of the SiC device and the Si3N4 substrate contributes to the overall thermal characteristics variation of the packaged SiC SBD.

  14. Light and heavy element isotopic compositions of mainstream SiC grains.

    Energy Technology Data Exchange (ETDEWEB)

    Amari, S.; Clayton, R. N.; Davis, A. M.; Lewis, R. S.; Pellin, M. J.

    1999-02-03

    Although a variety of types of pre-solar SiC grains have been classified by their C, N, and Si isotopic composition, the majority of such grains are so-called mainstream grains and are believed to have come from asymptotic giant branch stars [1]. We have previously reported the Mo isotopic compositions of presolar SiC grains whose C, N, and Si isotopic compositions were not known [2]. Since most presolar SiC grains fall in the mainstream group, we assumed that these grains were mainstream. The excellent match of the Mo isotopic data with expectations for nucleosynthesis in AGB stars was consistent with this identification. In order to better understand the distribution of isotopic compositions in presolar grains, we have begun to measure heavy element isotopic compositions of presolar SiC grains of known C, N and Si isotopic composition.

  15. Research Progress on Preparation for Biomass-based SiC Ceramic

    Directory of Open Access Journals (Sweden)

    CUI He-shuai

    2017-08-01

    Full Text Available Silicon carbide (SiC ceramics prepared by the conventional process has excellent properties and wide application prospects, but the increased cost of high-temperature preparation process restricts its further development. In contrast, the abundant porous structure of biomass makes itself to be ideal replacement of SiC ceramic prepared at low temperature. This paper reviewed the structure characteristics, preparation methods, pyrolysis mechanism and influence parameters of biomass-based SiC ceramic, and eventually explored the current problems and development trends of the pretreatment of carbon source and silicon source, the pyrolysis process and the application research on the preparation for biomass-based SiC ceramic.

  16. Light extraction efficiency enhancement for fluorescent SiC based white light-emitting diodes

    DEFF Research Database (Denmark)

    Ou, Haiyan; Ou, Yiyu; Argyraki, Aikaterini

    fluorescent Boron-Nitrogen co-doped 6H SiC is optimized in terms of source material, growth condition, dopant concentration, and carrier lifetime by using photoluminescence, pump-probe spectroscopy etc. The internal quantum efficiency is measured and the methods to increase the efficiency have been explored......Fluorescent SiC based white light-emitting diodes(LEDs) light source, as an innovative energy-efficient light source, would even have longer lifetime, better light quality and eliminated blue-tone effect, compared to the current phosphor based white LED light source. In this paper, the yellow....... At a device level, the focus is on improving the light extraction efficiency due to the rather high refractive index of SiC by nanostructuring the surface of SiC. Both periodic nanostructures made by e-beam lithography and nanosphere lithography and random nanostructures made by self-assembled Au nanosphere...

  17. FABRICATION AND MATERIAL ISSUES FOR THE APPLICATION OF SiC COMPOSITES TO LWR FUEL CLADDING

    Directory of Open Access Journals (Sweden)

    WEON-JU KIM

    2013-08-01

    Full Text Available The fabrication methods and requirements of the fiber, interphase, and matrix of nuclear grade SiCf/SiC composites are briefly reviewed. A CVI-processed SiCf/SiC composite with a PyC or (PyC-SiCn interphase utilizing Hi-Nicalon Type S or Tyranno SA3 fiber is currently the best combination in terms of the irradiation performance. We also describe important material issues for the application of SiC composites to LWR fuel cladding. The kinetics of the SiC corrosion under LWR conditions needs to be clarified to confirm the possibility of a burn-up extension and the cost-benefit effect of the SiC composite cladding. In addition, the development of end-plug joining technology and fission products retention capability of the ceramic composite tube would be key challenges for the successful application of SiC composite cladding.

  18. High-Temperature SiC Power Module with Integrated SiC Gate Drivers for Future High-Density Power Electronics Applications

    Energy Technology Data Exchange (ETDEWEB)

    Whitaker, Mr. Bret [APEI, Inc.; Cole, Mr. Zach [APEI, Inc.; Passmore, Mr. Brandon [APEI, Inc.; Mcnutt, Tyler [APEI, Inc.; Lostetter, Dr. Alex [APEI, Inc.; Ericson, Milton Nance [ORNL; Frank, Steven [ORNL; Britton Jr, Charles L [ORNL; Marlino, Laura D [ORNL; Mantooth, Alan [University of Arkansas; Francis, Matt [APEI, Inc.; Lamichhane, Ranjan [APEI, Inc.; Shepherd, Paul [APEI, Inc.; Glover, Michael [APEI, Inc.

    2014-01-01

    This paper presents a high-temperature capable intelligent power module that contains SiC power devices and SiC gate driver integrated circuits (ICs). The high-temperature capability of the SiC gate driver ICs allows for them to be packaged into the power module and be located physically close to the power devices. This provides a distinct advantage by reducing the gate driver loop inductance, which promotes high frequency operation, while also reducing the overall volume of the system through higher levels of integration. The power module was tested in a bridgeless-boost converter (Fig. 1) to determine the performance of the module in a system level application. The converter was operated with a switching frequency of 200 kHz with a peak output power of approximately 5 kW. The peak efficiency was found to be 97.5% at 2.9 kW.

  19. Conversion of wood flour/SiO2/phenolic composite to porous SiC ceramic containing SiC whiskers

    Directory of Open Access Journals (Sweden)

    Li Zhong

    2013-01-01

    Full Text Available A novel wood flour/SiO2/phenolic composite was chosen to be converted into porous SiC ceramic containing SiC whiskers via carbothermal reduction. At 1550°C the composite is converted into porous SiC ceramic with pore diameters of 10~40μm, and consisting of β-SiC located at the position of former wood cell walls. β-SiC wire-like whiskers of less than 50 nm in diameter and several tens to over 100 μm in length form within the pores. The surface of the resulting ceramic is coated with β-SiC necklace-like whiskers with diameters of 1~2μm.

  20. Quadratic and Cubic Nonlinear Oscillators with Damping and Their Applications

    Science.gov (United States)

    Li, Jibin; Feng, Zhaosheng

    We apply the qualitative theory of dynamical systems to study exact solutions and the dynamics of quadratic and cubic nonlinear oscillators with damping. Under certain parametric conditions, we also consider the van der Waals normal form, Chaffee-Infante equation, compound Burgers-KdV equation and Burgers-KdV equation for explicit representations of kink-profile wave solutions and unbounded traveling wave solutions.

  1. The Number of Real Roots of a Cubic Equation

    Science.gov (United States)

    Kavinoky, Richard; Thoo, John B.

    2008-01-01

    To find the number of distinct real roots of the cubic equation (1) x[caret]3 + bx[caret]2 + cx + d = 0, we could attempt to solve the equation. Fortunately, it is easy to tell the number of distinct real roots of (1) without having to solve the equation. The key is the discriminant. The discriminant of (1) appears in Cardan's (or Cardano's) cubic…

  2. A highly ordered cubic mesoporous silica/graphene nanocomposite

    Science.gov (United States)

    Lee, Chang-Wook; Roh, Kwang Chul; Kim, Kwang-Bum

    2013-09-01

    A highly ordered cubic mesoporous silica (KIT-6)/graphene nanocomposite and 2D KIT-6 nanoflakes were synthesized using a novel synthesis methodology. The non-ionic triblock copolymer, P123, played a dual role as a structure-directing agent in the formation of the cubic mesoporous structure and as a cross-linking agent between mesoporous silica and graphene. The prepared (KIT-6)/graphene nanocomposite could act as a template for the preparation of mesoporous material/graphene nanocomposites.A highly ordered cubic mesoporous silica (KIT-6)/graphene nanocomposite and 2D KIT-6 nanoflakes were synthesized using a novel synthesis methodology. The non-ionic triblock copolymer, P123, played a dual role as a structure-directing agent in the formation of the cubic mesoporous structure and as a cross-linking agent between mesoporous silica and graphene. The prepared (KIT-6)/graphene nanocomposite could act as a template for the preparation of mesoporous material/graphene nanocomposites. Electronic supplementary information (ESI) available: S1: TEM images of disordered mesoporous silica/graphene nanocomposite; S2: TEM images of KIT-6/GO nanocomposite; S3: Thermogravimetric analysis of KIT-6/GO and KG-400-700; S4: SEM and TEM images of KIT-6; S5: Low angle XRD, Raman spectra, N2 adsorption isotherms, pore size distribution and photographic images of the prepared samples; S6: TEM image and N2 adsorption isotherms of mesoporous carbon/graphene nanocomposite; S7: XPS C1s spectra of the prepared samples. See DOI: 10.1039/c3nr03108j

  3. Multiscale Modeling of Point and Line Defects in Cubic Lattices

    Science.gov (United States)

    2007-01-01

    and discli- nations with finite micropolar elastoplasticity . Int. J. Plasticity. 22:210–256, 2006. 56. Menzel, A., and Steinmann, P., On the contin...Voyiadjis, G. Z., A finite strain plastic- damage model for high velocity impact using combined viscosity and gradient localization limiters: Part I...Theoretical for- mulation. Int. J. Damage Mech. 15:293–334, 2006. 58. Milstein, F., and Chantasiriwan, S,. Theoretical study of the response of 12 cubic

  4. INTEGRABILITY AND LINEARIZABILITY FOR A CLASS OF CUBIC KOLMOGOROV SYSTEMS

    Institute of Scientific and Technical Information of China (English)

    2010-01-01

    The integrability and linearizability for a class of cubic Kolmogorov systems are studied. A recursive formula to compute the saddle quantities of the systems is deduced firstly, and integrable conditions for the systems are obtained. Then a recursive formula to compute the coefficients of the normal form for saddle points of the systems is also applied. Finally linearizable conditions of the origin for the systems are given. Both formulas to find necessary conditions are all linear and readily done using c...

  5. Infinite Body Centered Cubic Network of Identical Resistors

    CERN Document Server

    Asad, J H

    2013-01-01

    We express the equivalent resistance between the origin and any other lattice site in an infinite Body Centered Cubic (BCC) network consisting of identical resistors each of resistance R rationally in terms of known values and . The equivalent resistance is then calculated. Finally, for large separation between the origin and the lattice site two asymptotic formulas for the resistance are presented and some numerical results with analysis are given.

  6. Lipidic cubic phase injector facilitates membrane protein serial femtosecond crystallography.

    Science.gov (United States)

    Weierstall, Uwe; James, Daniel; Wang, Chong; White, Thomas A; Wang, Dingjie; Liu, Wei; Spence, John C H; Bruce Doak, R; Nelson, Garrett; Fromme, Petra; Fromme, Raimund; Grotjohann, Ingo; Kupitz, Christopher; Zatsepin, Nadia A; Liu, Haiguang; Basu, Shibom; Wacker, Daniel; Han, Gye Won; Katritch, Vsevolod; Boutet, Sébastien; Messerschmidt, Marc; Williams, Garth J; Koglin, Jason E; Marvin Seibert, M; Klinker, Markus; Gati, Cornelius; Shoeman, Robert L; Barty, Anton; Chapman, Henry N; Kirian, Richard A; Beyerlein, Kenneth R; Stevens, Raymond C; Li, Dianfan; Shah, Syed T A; Howe, Nicole; Caffrey, Martin; Cherezov, Vadim

    2014-01-01

    Lipidic cubic phase (LCP) crystallization has proven successful for high-resolution structure determination of challenging membrane proteins. Here we present a technique for extruding gel-like LCP with embedded membrane protein microcrystals, providing a continuously renewed source of material for serial femtosecond crystallography. Data collected from sub-10-μm-sized crystals produced with less than 0.5 mg of purified protein yield structural insights regarding cyclopamine binding to the Smoothened receptor.

  7. Rotary Ultrasonic Machining of Poly-Crystalline Cubic Boron Nitride

    OpenAIRE

    2014-01-01

    Poly-crystalline cubic boron nitride (PCBN) is one of the hardest material. Generally, so hard materials could not be machined by conventional machining methods. Therefore, for this purpose, advanced machining methods have been designed. Rotary ultrasonic machining (RUM) is included among them. RUM is based on abrasive removing mechanism of ultrasonic vibrating diamond particles, which are bonded on active part of rotating tool. It is suitable especially for machining hard and brittle materia...

  8. Bicontinuous cubic liquid crystalline nanoparticles for oral delivery of Doxorubicin

    DEFF Research Database (Denmark)

    Swarnakar, Nitin K; Thanki, Kaushik; Jain, Sanyog

    2014-01-01

    PURPOSE: The present study explores the potential of bicontinous cubic liquid crystalline nanoparticles (LCNPs) for improving therapeutic potential of doxorubicin. METHODS: Phytantriol based Dox-LCNPs were prepared using hydrotrope method, optimized for various formulation components, process...... variables and lyophilized. Structural elucidation of the reconstituted formulation was performed using HR-TEM and SAXS analysis. The developed formulation was subjected to exhaustive cell culture experiments for delivery potential (Caco-2 cells) and efficacy (MCF-7 cells). Finally, in vivo pharmacokinetics...

  9. The traveling salesman problem on cubic and subcubic graphs

    CERN Document Server

    Boyd, Sylvia; van der Ster, Suzanne; Stougie, Leen

    2011-01-01

    We study the Travelling Salesman Problem (TSP) on the metric completion of cubic and subcubic graphs, which is known to be NP-hard. The problem is of interest because of its relation to the famous 4/3 conjecture for metric TSP, which says that the integrality gap, i.e., the worst case ratio between the optimal values of the TSP and its linear programming relaxation (the subtour elimination relaxation), is 4/3. We present the first algorithm for cubic graphs with approximation ratio 4/3. The proof uses polyhedral techniques in a surprising way, which is of independent interest. In fact we prove constructively that for any cubic graph on $n$ vertices a tour of length 4n/3-2 exists, which also implies the 4/3 conjecture, as an upper bound, for this class of graph-TSP. Recently, M\\"omke and Svensson presented a randomized algorithm that gives a 1.461-approximation for graph-TSP on general graphs and as a side result a 4/3-approximation algorithm for this problem on subcubic graphs, also settling the 4/3 conjectur...

  10. Field-effect transistors based on cubic indium nitride.

    Science.gov (United States)

    Oseki, Masaaki; Okubo, Kana; Kobayashi, Atsushi; Ohta, Jitsuo; Fujioka, Hiroshi

    2014-02-04

    Although the demand for high-speed telecommunications has increased in recent years, the performance of transistors fabricated with traditional semiconductors such as silicon, gallium arsenide, and gallium nitride have reached their physical performance limits. Therefore, new materials with high carrier velocities should be sought for the fabrication of next-generation, ultra-high-speed transistors. Indium nitride (InN) has attracted much attention for this purpose because of its high electron drift velocity under a high electric field. Thick InN films have been applied to the fabrication of field-effect transistors (FETs), but the performance of the thick InN transistors was discouraging, with no clear linear-saturation output characteristics and poor on/off current ratios. Here, we report the epitaxial deposition of ultrathin cubic InN on insulating oxide yttria-stabilized zirconia substrates and the first demonstration of ultrathin-InN-based FETs. The devices exhibit high on/off ratios and low off-current densities because of the high quality top and bottom interfaces between the ultrathin cubic InN and oxide insulators. This first demonstration of FETs using a ultrathin cubic indium nitride semiconductor will thus pave the way for the development of next-generation high-speed electronics.

  11. Packing of nonoverlapping cubic particles: Computational algorithms and microstructural characteristics.

    Science.gov (United States)

    Malmir, Hessam; Sahimi, Muhammad; Tabar, M Reza Rahimi

    2016-12-01

    Packing of cubic particles arises in a variety of problems, ranging from biological materials to colloids and the fabrication of new types of porous materials with controlled morphology. The properties of such packings may also be relevant to problems involving suspensions of cubic zeolites, precipitation of salt crystals during CO_{2} sequestration in rock, and intrusion of fresh water in aquifers by saline water. Not much is known, however, about the structure and statistical descriptors of such packings. We present a detailed simulation and microstructural characterization of packings of nonoverlapping monodisperse cubic particles, following up on our preliminary results [H. Malmir et al., Sci. Rep. 6, 35024 (2016)2045-232210.1038/srep35024]. A modification of the random sequential addition (RSA) algorithm has been developed to generate such packings, and a variety of microstructural descriptors, including the radial distribution function, the face-normal correlation function, two-point probability and cluster functions, the lineal-path function, the pore-size distribution function, and surface-surface and surface-void correlation functions, have been computed, along with the specific surface and mean chord length of the packings. The results indicate the existence of both spatial and orientational long-range order as the the packing density increases. The maximum packing fraction achievable with the RSA method is about 0.57, which represents the limit for a structure similar to liquid crystals.

  12. Dry Powder Precursors of Cubic Liquid Crystalline Nanoparticles (cubosomes)

    Science.gov (United States)

    Spicer, Patrick T.; Small, William B.; Small, William B.; Lynch, Matthew L.; Burns, Janet L.

    2002-08-01

    Cubosomes are dispersed nanostructured particles of cubic phase liquid crystal that have stimulated significant research interest because of their potential for application in controlled-release and drug delivery. Despite the interest, cubosomes can be difficult to fabricate and stabilize with current methods. Most of the current work is limited to liquid phase processes involving high shear dispersion of bulk cubic liquid crystalline material into sub-micron particles, limiting application flexibility. In this work, two types of dry powder cubosome precursors are produced by spray-drying: (1) starch-encapsulated monoolein is produced by spray-drying a dispersion of cubic liquid crystalline particles in an aqueous starch solution and (2) dextran-encapsulated monoolein is produced by spray-drying an emulsion formed by the ethanol-dextran-monoolein-water system. The encapsulants are used to decrease powder cohesion during drying and to act as a soluble colloidal stabilizer upon hydration of the powders. Both powders are shown to form (on average) 0.6 μm colloidally-stable cubosomes upon addition to water. However, the starch powders have a broader particle size distribution than the dextran powders because of the relative ease of spraying emulsions versus dispersions. The developed processes enable the production of nanostructured cubosomes by end-users rather than just specialized researchers and allow tailoring of the surface state of the cubosomes for broader application.

  13. Packing of nonoverlapping cubic particles: Computational algorithms and microstructural characteristics

    Science.gov (United States)

    Malmir, Hessam; Sahimi, Muhammad; Tabar, M. Reza Rahimi

    2016-12-01

    Packing of cubic particles arises in a variety of problems, ranging from biological materials to colloids and the fabrication of new types of porous materials with controlled morphology. The properties of such packings may also be relevant to problems involving suspensions of cubic zeolites, precipitation of salt crystals during CO2 sequestration in rock, and intrusion of fresh water in aquifers by saline water. Not much is known, however, about the structure and statistical descriptors of such packings. We present a detailed simulation and microstructural characterization of packings of nonoverlapping monodisperse cubic particles, following up on our preliminary results [H. Malmir et al., Sci. Rep. 6, 35024 (2016), 10.1038/srep35024]. A modification of the random sequential addition (RSA) algorithm has been developed to generate such packings, and a variety of microstructural descriptors, including the radial distribution function, the face-normal correlation function, two-point probability and cluster functions, the lineal-path function, the pore-size distribution function, and surface-surface and surface-void correlation functions, have been computed, along with the specific surface and mean chord length of the packings. The results indicate the existence of both spatial and orientational long-range order as the the packing density increases. The maximum packing fraction achievable with the RSA method is about 0.57, which represents the limit for a structure similar to liquid crystals.

  14. Integer roots of quadratic and cubic polynomials with integer coefficients

    CERN Document Server

    Zelator, Konstantine

    2011-01-01

    The subject matter of this work is quadratic and cubic polynomial functions with integer coefficients;and all of whose roots are integers. The material of this work is directed primarily at educators,students,and teachers of mathematics,grades K12 to K20.The results of this work are expressed in Theorems3,4,and5. Of these theorems, Theorem3, is the one that most likely, the general reader of this article will have some familiarity with.In Theorem3, precise coefficient conditions are given;in order that a quadratic trinomial(with integer) have two integer roots or zeros.On the other hand, Theorems4 and5 are largely unfamiliar territory. In Theorem4, precise coefficient conditions are stated; for a monic cubic polynomial to have a double(i.e.of multiplicity 2) integer root, and a single integer root(i.e.of multiplicity 1).The entire family of such cubics can be described in terms of four groups or subfamilies; each such group being a two-integer parameter subfamily. In Theorem5, a one-integer parameter family o...

  15. Arithmetic Problems in Cubic and Quartic Function Fields

    CERN Document Server

    Bembom, Tobias

    2010-01-01

    One of the main themes in this thesis is the description of the signature of both the infinite place and the finite places in cubic function fields of any characteristic and quartic function fields of characteristic at least 5. For these purposes, we provide a new theory which can be applied to cubic and quartic function fields and to even higher dimensional function fields. One of the striking advantages of this theory to other existing methods is that is does not use the concept of p-adic completions and we can dispense of Cardano's formulae. Another key result comprises the construction of cubic function fields of unit rank 1 and 2, with an obvious fundamental system. One of the main ingredients for such constructions is the definition of the maximum value. This definition is new and very prolific in the context of finding fundamental systems. We conclude the thesis with miscellaneous results on the divisor class number h, including a new approach for finding divisors of h.

  16. Investigation on the Short Circuit Safe Operation Area of SiC MOSFET Power Modules

    DEFF Research Database (Denmark)

    Reigosa, Paula Diaz; Luo, Haoze; Iannuzzo, Francesco

    2016-01-01

    This paper gives a better insight of the short circuit capability of state-of-the-art SiC MOSFET power modules rated at 1.2 kV by highlighting the physical limits under different operating conditions. Two different failure mechanisms have been identified, both reducing the short-circuit capability......) of the studied SiC MOSFET power modules is formulated based on the two proposed criteria....

  17. drs (Distantly Related sic) Gene Polymorphisms among emm12-Type Streptococcus pyogenes Isolates

    OpenAIRE

    Brandt, Claudia M.; Haase, Gerhard; Spellerberg, Barbara; Holland, Regina; Lütticken, Rudolf

    2003-01-01

    Twenty-eight emm12-type Streptococcus pyogenes isolates from patients with invasive and noninvasive infections or from asymptomatic carriers were genetically typed. Sequencing of drs (distantly related sic [streptococcal inhibitor of complement]) genes identified two novel alleles and revealed a polymorphism for drs similar to that of sic. No association was observed between the five different drs alleles and the five restriction patterns of the vir regulon for the isolates studied. These dat...

  18. Passivation of surface-nanostructured f-SiC and porous SiC

    DEFF Research Database (Denmark)

    Ou, Haiyan; Lu, Weifang; Ou, Yiyu

    The further enhancement of photoluminescence from nanostructured fluorescent silicon carbide (f-SiC) and porous SiC by using atomic layer deposited (ALD) Al2O3 is studied in this paper.......The further enhancement of photoluminescence from nanostructured fluorescent silicon carbide (f-SiC) and porous SiC by using atomic layer deposited (ALD) Al2O3 is studied in this paper....

  19. Powder metallurgical processing of a SiC particle reinforced Al-6wt.%Fe alloy

    OpenAIRE

    Staniek, G.; Lehnert, F.; Peters, M; Bunk, W.; Kaysser, W.

    1993-01-01

    Discontinuously reinforced aluminum alloys for elevated temperatures with a matrix hardened by intermetallic phases generally have to be produced by powder metallurgy because of their high content of alloying elements. The objective of this investigation was the evaluation of powder metallurgical processing for an A16Fe powder alloy containing various fractions and volume contents of SiC particles. During processing, the effect of powder mixing on SiC particle distribution in the extruded pro...

  20. SiC nanocrystals as Pt catalyst supports for fuel cell applications

    DEFF Research Database (Denmark)

    Dhiman, Rajnish; Morgen, Per; Skou, E.M.

    2013-01-01

    A robust catalyst support is pivotal to Proton Exchange Membrane Fuel Cells (PEMFCs) to overcome challenges such as catalyst support corrosion, low catalyst utilization and overall capital cost. SiC is a promising candidate material which could be applied as a catalyst support in PEMFCs. Si...... based catalysts (BASF & HISPEC). These promising results signal a new era of SiC based catalysts for fuel cell applications. © The Royal Society of Chemistry 2013....

  1. Characterization and functionalization by sol–gel route of SiC foams

    OpenAIRE

    Mollicone, Jessica; Ansart, Florence; Lenormand, Pascal; Duployer, Benjamin; Tenailleau, Christophe; Jérôme VICENTE (LEREPS-GRES)

    2014-01-01

    International audience; Ceramic foam materials are commonly used for various applications, including catalyst supports or solar receivers. SiC foams are good candidates for the latter application as solar receivers. Its efficiency is directly related to the geometry, which can be evidenced by X-ray microtomography, and optical properties of the receiver. A promising route to add functionalities with homogenous and adhering oxide coatings onto complex SiC foams in a single step process is prop...

  2. Laser annealing of sputter-deposited -SiC and -SiCN films

    Indian Academy of Sciences (India)

    M A Fraga; M Massi; I C Oliveira; F D Origo; W Miyakawa

    2011-12-01

    This work describes the laser annealing of -SiC and -SiCN films deposited on (100) Si and quartz substrates by RF magnetron sputtering. Two samples of -SiCN thin films were produced under different N2/Ar flow ratios. Rutherford backscattering spectroscopy (RBS), Raman analysis and Fourier transform infrared spectrometry (FTIR) techniques were used to investigate the composition and bonding structure of as-deposited and laser annealed SiC and SiCN films.

  3. Manufacturing: SiC Power Electronics for Variable Frequency Motor Drives

    Energy Technology Data Exchange (ETDEWEB)

    Horowitz, Kelsey A [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Bench Reese, Samantha R [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Remo, Timothy W [National Renewable Energy Laboratory (NREL), Golden, CO (United States)

    2017-08-15

    This brochure, published as an annual research highlight of the Clean Energy Manufacturing Analysis Center (CEMAC), summarizes CEMAC analysis of silicon carbide (SiC) power electronics for variable frequency motor drives. The key finding presented is that variations in manufacturing expertise, yields, and access to existing facilities impact regional costs and manufacturing location decisions for SiC ingots, wafers, chips, and power modules more than do core country-specific factors such as labor and electricity costs.

  4. Scalable SiC Power Switches for Applications in More Electric Vehicles (Preprint)

    Science.gov (United States)

    2007-06-01

    AFRL-PR-WP-TP-2007-237 SCALABLE SiC POWER SWITCHES FOR APPLICATIONS IN MORE ELECTRIC VEHICLES (PREPRINT) Michael S. Mazzola, Douglas Seale...SWITCHES FOR APPLICATIONS IN MORE ELECTRIC VEHICLES (PREPRINT) 5c. PROGRAM ELEMENT NUMBER 63175C 5d. PROJECT NUMBER 1168 5e. TASK NUMBER 13 6...Standard Form 298 (Rev. 8-98) Prescribed by ANSI Std. Z39-18 1 Scalable SiC Power Switches for Applications in More Electric Vehicles Abstract

  5. Evaluation of surface recombination of SiC for development of bipolar devices

    Science.gov (United States)

    Kato, Masashi

    2016-09-01

    Ultra-high voltage power devices are employed for management of power networks. Si-based semiconductor devices have been developed for such the power devices. Maximum breakdown voltages of Si devices are of the order of kV. When the voltage in the power network was higher than the breakdown voltage of the devices, the devices were connected in series. The series connection introduces high resistance and power loss. To overcome this series resistance problem, it has been suggested that utilization of silicon carbide (SiC) devices. SiC has much higher breakdown electric field than Si, and thus high voltage in the power networks can be managed by SiC device without the series connection. Therefore, development of ultra-high voltage SiC device will decrease resistance and power loss in the power networks. However, there are several difficulties to develop ultra-high voltage SiC devices. One of the difficulties is control of the carrier lifetime. In fact, ultra-high voltage devices are fabricated with bipolar structure, and, in the bipolar devices, the carrier lifetime is highly influential on resistance and power loss. The carrier lifetime is limited by several factors, and one of the most important factors is the surface recombination. Therefore, evaluation and control of the surface recombination is essential to develop ultra-high voltage SiC devices. In this paper, we will report evaluation techniques for the surface recombination of SiC. In addition, dependence of the surface recombination on surface treatments, crystal faces and temperature are shown. The evaluated surface recombination velocities will support development of ultra-high voltage SiC devices.

  6. Dynamic properties of the cubic nonlinear Schr(o)dinger equation by symplectic method

    Institute of Scientific and Technical Information of China (English)

    Liu Xue-Shen; Wei Jia-Yu; Ding Pei-Zhu

    2005-01-01

    The dynamic properties of a cubic nonlinear Schrodinger equation are investigated numerically by using the symplectic method with different space approximations. The behaviours of the cubic nonlinear Schrodinger equation are discussed with different cubic nonlinear parameters in the harmonically modulated initial condition. We show that the conserved quantities will be preserved for long-time computation but the system will exhibit different dynamic behaviours in space difference approximation for the strong cubic nonlinearity.

  7. Mechanical Behavior of Sic Fiber-Sic Matrix Composite and Correlation to In Situ Fiber Properites at Room and High Temperatures

    Institute of Scientific and Technical Information of China (English)

    Shuqi Guo; Yutaka Kagawa

    2000-01-01

    @@ Tensile mechanical properties of PIP-processed 2D, plain-woven fabric. BN-coated Hi-NicalonTM SiC fiber-reinforced SiC matrix composite at room temperature (298 K), 1400 and 1600 K in air have been studied.Young's modulus and tensile strength of the composite decrease with the increase of test temperature, especially at 1600 K a considerable reduction is observed. The tensile strength is found to be consistent with the value predicted by a global load sharing model, based on the actual in situ fiber strength properties which are obtained by a fracture mirror method.

  8. Elaboration and characterization of luminescent porous SiC microparticles/poly vinyl alcohol thin films

    Science.gov (United States)

    Kaci, S.; Mansouri, H.; Bozetine, I.; Keffous, A.; Guerbous, L.; Siahmed, Y.; Aissiou, S.

    2017-02-01

    In this study, Morphological, optical and photoluminescence characterizations of nanostructured SiC micropowder embedded in PVA matrix and deposited as thin films on glass substrates are reported. we prepared the porous SiC microparticles/PVA thin films by spin coating method. The average size of SiC microparticles were 7 μm. An electroless method was used for producing porous silicon carbide powder under UV irradiation. Silver nanoparticles coated SiC powder was formed by polyol process. The etchant was composed of aqueous HF and different oxidants. Various porous morphologies were obtained and studied as a function of oxidant type, etching time, and wavelength of irradiation. We concluded that the chemical etching conditions of SiC powder seems to have a large impact on the resulting properties. We noticed that the best photoluminescence property was achieved when SiC powder was etched in HF/K2S2O8 at reaction temperature of 80 °C for t = 40min and under UV light of 254 nm.

  9. Electronic Structure and Chemical Bond of Ti3SiC2 and Adding Al Element

    Institute of Scientific and Technical Information of China (English)

    MIN Xinmin; LU Ning; MEI Bingchu

    2006-01-01

    The relation among electronic structure, chemical bond and property of Ti3SiC2 and Al-doped was studied by density function and discrete variation (DFT-DVM) method. When Al element is added into Ti3SiC2, there is a less difference of ionic bond, which does not play a leading role to influent the properties. After adding Al, the covalent bond of Al and the near Ti becomes somewhat weaker, but the covalent bond of Al and the Si in the same layer is obviously stronger than that of Si and Si before adding. Therefore, in preparation of Ti3SiC2, adding a proper quantity of Al can promote the formation of Ti3SiC2. The density of state shows that there is a mixed conductor character in both of Ti3SiC2 and adding Al element. Ti3SiC2 is with more tendencies to form a semiconductor. The total density of state near Fermi lever after adding Al is larger than that before adding, so the electric conductivity may increase after adding Al.

  10. Effect of Ductile Agents on the Dynamic Behavior of SiC3D Network Composites

    Science.gov (United States)

    Zhu, Jingbo; Wang, Yangwei; Wang, Fuchi; Fan, Qunbo

    2016-10-01

    Co-continuous SiC ceramic composites using pure aluminum, epoxy, and polyurethane (PU) as ductile agents were developed. The dynamic mechanical behavior and failure mechanisms were investigated experimentally using the split Hopkinson pressure bar (SHPB) method and computationally by finite element (FE) simulations. The results show that the SiC3D/Al composite has the best overall performance in comparison with SiC3D/epoxy and SiC3D/PU composites. FE simulations are generally consistent with experimental data. These simulations provide valuable help in predicting mechanical strength and in interpreting the experimental results and failure mechanisms. They may be combined with micrographs for fracture characterizations of the composites. We found that interactions between the SiC phase and ductile agents under dynamic compression in the SHPB method are complex, and that interfacial condition is an important parameter that determines the mechanical response of SiC3D composites with a characteristic interlocking structure during dynamic compression. However, the effect of the mechanical properties of ductile agents on dynamic behavior of the composites is a second consideration in the production of the composites.

  11. Si/C hybrid nanostructures for Li-ion anodes: An overview

    Science.gov (United States)

    Terranova, Maria Letizia; Orlanducci, Silvia; Tamburri, Emanuela; Guglielmotti, Valeria; Rossi, Marco

    2014-01-01

    This review article summarizes recent and increasing efforts in the development of novel Li ion cell anode nanomaterials based on the coupling of C with Si. The rationale behind such efforts is based on the fact that the Si-C coupling realizes a favourable combination of the two materials properties, such as the high lithiation capacity of Si and the mechanical and conductive properties of C, making Si/C hybrid nanomaterials the ideal candidates for innovative and improved Li-ion anodes. Together with an overview of the methodologies proposed in the last decade for material preparation, a discussion on relationship between organization at the nanoscale of the hybrid Si/C systems and battery performances is given. An emerging indication is that the enhancement of the batteries efficiency in terms of mass capacity, energy density and cycling stability, resides in the ability to arrange Si/C bi-component nanostructures in pre-defined architectures. Starting from the results obtained so far, this paper aims to indicate some emerging directions and to inspire promising routes to optimize fabrication of Si/C nanomaterials and engineering of Li-ion anodes structures. The use of Si/C hybrid nanostructures could represents a viable and effective solution to the foreseen limits of present lithium ion technology.

  12. U.S. Department of Energy Accident Resistant SiC Clad Nuclear Fuel Development

    Energy Technology Data Exchange (ETDEWEB)

    George W. Griffith

    2011-10-01

    A significant effort is being placed on silicon carbide ceramic matrix composite (SiC CMC) nuclear fuel cladding by Light Water Reactor Sustainability (LWRS) Advanced Light Water Reactor Nuclear Fuels Pathway. The intent of this work is to invest in a high-risk, high-reward technology that can be introduced in a relatively short time. The LWRS goal is to demonstrate successful advanced fuels technology that suitable for commercial development to support nuclear relicensing. Ceramic matrix composites are an established non-nuclear technology that utilizes ceramic fibers embedded in a ceramic matrix. A thin interfacial layer between the fibers and the matrix allows for ductile behavior. The SiC CMC has relatively high strength at high reactor accident temperatures when compared to metallic cladding. SiC also has a very low chemical reactivity and doesn't react exothermically with the reactor cooling water. The radiation behavior of SiC has also been studied extensively as structural fusion system components. The SiC CMC technology is in the early stages of development and will need to mature before confidence in the developed designs can created. The advanced SiC CMC materials do offer the potential for greatly improved safety because of their high temperature strength, chemical stability and reduced hydrogen generation.

  13. Velcro-Inspired SiC Fuzzy Fibers for Aerospace Applications.

    Science.gov (United States)

    Hart, Amelia H C; Koizumi, Ryota; Hamel, John; Owuor, Peter Samora; Ito, Yusuke; Ozden, Sehmus; Bhowmick, Sanjit; Syed Amanulla, Syed Asif; Tsafack, Thierry; Keyshar, Kunttal; Mital, Rahul; Hurst, Janet; Vajtai, Robert; Tiwary, Chandra Sekhar; Ajayan, Pulickel M

    2017-04-05

    The most recent and innovative silicon carbide (SiC) fiber ceramic matrix composites, used for lightweight high-heat engine parts in aerospace applications, are woven, layered, and then surrounded by a SiC ceramic matrix composite (CMC). To further improve both the mechanical properties and thermal and oxidative resistance abilities of this material, SiC nanotubes and nanowires (SiCNT/NWs) are grown on the surface of the SiC fiber via carbon nanotube conversion. This conversion utilizes the shape memory synthesis (SMS) method, starting with carbon nanotube (CNT) growth on the SiC fiber surface, to capitalize on the ease of dense surface morphology optimization and the ability to effectively engineer the CNT-SiC fiber interface to create a secure nanotube-fiber attachment. Then, by converting the CNTs to SiCNT/NWs, the relative morphology, advantageous mechanical properties, and secure connection of the initial CNT-SiC fiber architecture are retained, with the addition of high temperature and oxidation resistance. The resultant SiCNT/NW-SiC fiber can be used inside the SiC ceramic matrix composite for a high-heat turbo engine part with longer fatigue life and higher temperature resistance. The differing sides of the woven SiCNT/NWs act as the "hook and loop" mechanism of Velcro but in much smaller scale.

  14. SiC fibre by chemical vapour deposition on tungsten filament

    Indian Academy of Sciences (India)

    R V Krishnarao; J Subrahmanyam; S Subbarao

    2001-06-01

    A CVD system for the production of continuous SiC fibre was set up. The process of SiC coating on 19 m diameter tungsten substrate was studied. Methyl trichloro silane (CH3SiCl3) and hydrogen reactants were used. Effect of substrate temperature (1300–1500°C) and concentration of reactants on the formation of SiC coating were studied. SiC coatings of negligible thickness were formed at very low flow rates of hydrogen (5 × 10–5 m3/min) and CH3SiCl3 (1.0 × 10–4 m3/min of Ar). Uneven coatings and brittle fibres were formed at very high concentrations of CH3SiCl3 (6 × 10–4 m3/min of Ar). The flow rates of CH3SiCl3 and hydrogen were adjusted to get SiC fibre with smooth surface. The structure and morphology of SiC fibres were evaluated.

  15. Feasibility study on the application of carbide (ZrC, SiC) for VHTR

    Energy Technology Data Exchange (ETDEWEB)

    Park, Ji Yeon; Kim, Weon Ju; Jung, Choong Hwan; Ryu, Woo Seog; Kim, Si Hyeong; Jang, Moon Hee; Lee, Young Woo

    2006-08-15

    A feasibility study on the coating process of ZrC for the TRISO nuclear fuel and applications of SiC as high temperature materials for the core components has performed to develop the fabrication process for the advanced ZrC TRISO fuels and the high temperature structural components for VHTR, respectively. In the case of ZrC coating, studies were focused on the comparisons of the developed coating processes for screening of our technology, the evaluations of the reactions parameters for a ZrC deposition by the thermodynamic calculations and the preliminary coating experiments by the chloride process. With relate to SiC ceramics, our interesting items are as followings; an analysis of applications and specifications of the SiC components and collections of the SiC properties and establishments of data base. For these purposes, applications of SiC ceramics for the GEN-IV related components as well as the fusion reactor related ones were reviewed. Additionally, the on-going activities with related to the ZrC clad and the SiC composites discussed in the VHTR GIF-PMB, were reviewed to make the further research plans at the section 1 in chapter 3.

  16. Packaging Technologies for 500C SiC Electronics and Sensors

    Science.gov (United States)

    Chen, Liang-Yu

    2013-01-01

    Various SiC electronics and sensors are currently under development for applications in 500C high temperature environments such as hot sections of aerospace engines and the surface of Venus. In order to conduct long-term test and eventually commercialize these SiC devices, compatible packaging technologies for the SiC electronics and sensors are required. This presentation reviews packaging technologies developed for 500C SiC electronics and sensors to address both component and subsystem level packaging needs for high temperature environments. The packaging system for high temperature SiC electronics includes ceramic chip-level packages, ceramic printed circuit boards (PCBs), and edge-connectors. High temperature durable die-attach and precious metal wire-bonding are used in the chip-level packaging process. A high temperature sensor package is specifically designed to address high temperature micro-fabricated capacitive pressure sensors for high differential pressure environments. This presentation describes development of these electronics and sensor packaging technologies, including some testing results of SiC electronics and capacitive pressure sensors using these packaging technologies.

  17. Applications, Prospects and Challenges of Silicon Carbide Junction Field Effect Transistor (SIC JFET

    Directory of Open Access Journals (Sweden)

    Frederick Ojiemhende Ehiagwina

    2016-09-01

    Full Text Available Properties of Silicon Carbide Junction Field Effect Transistor (SiC JFET such as high switching speed, low forward voltage drop and high temperature operation have attracted the interest of power electronic researchers and technologists, who for many years developed devices based on Silicon (Si.  A number of power system Engineers have made efforts to develop more robust equipment including circuits or modules with higher power density. However, it was realized that several available power semiconductor devices were approaching theoretical limits offered by Si material with respect to capability to block high voltage, provide low on-state voltage drop and switch at high frequencies. This paper presents an overview of the current applications of SiC JFET in circuits such as inverters, rectifiers and amplifiers. Other areas of application reviewed include; usage of the SiC JFET in pulse signal circuits and boost converters. Efforts directed toward mitigating the observed increase in electromagnetic interference were also discussed. It also presented some areas for further research, such as having more applications of SiC JFET in harsh, high temperature environment. More work is needed with regards to SiC JFET drivers so as to ensure stable and reliable operation, and reduction in the prices of SiC JFETs through mass production by industries.

  18. A SiC MOSFET Based Inverter for Wireless Power Transfer Applications

    Energy Technology Data Exchange (ETDEWEB)

    Onar, Omer C [ORNL; Chinthavali, Madhu Sudhan [ORNL; Campbell, Steven L [ORNL; Ning, Puqi [Chinese Academy of Sciences (CAS); White, Cliff P [ORNL; Miller (JNJ), John M. [JNJ-Miller PLC

    2014-01-01

    In a wireless power transfer (WPT) system, efficiency of the power conversion stages is crucial so that the WPT technology can compete with the conventional conductive charging systems. Since there are 5 or 6 power conversion stages, each stage needs to be as efficient as possible. SiC inverters are crucial in this case; they can handle high frequency operation and they can operate at relatively higher temperatures resulting in reduces cost and size for the cooling components. This study presents the detailed power module design, development, and fabrication of a SiC inverter. The proposed inverter has been tested at three center frequencies that are considered for the WPT standardization. Performance of the inverter at the same target power transfer level is analyzed along with the other system components. In addition, another SiC inverter has been built in authors laboratory by using the ORNL designed and developed SiC modules. It is shown that the inverter with ORNL packaged SiC modules performs simular to that of the inverter having commercially available SiC modules.

  19. Incorporation of oxygen in SiC implanted with hydrogen

    Energy Technology Data Exchange (ETDEWEB)

    Barcz, A., E-mail: barcz@ite.waw.pl [Institute of Physics, Polish Academy of Sciences, 02-668 Warsaw (Poland); Institute of Electron Technology, 02-668 Warsaw (Poland); Jakieła, R. [Institute of Physics, Polish Academy of Sciences, 02-668 Warsaw (Poland); Kozubal, M. [Institute of Electron Technology, 02-668 Warsaw (Poland); Dyczewski, J. [Institute of Physics, Polish Academy of Sciences, 02-668 Warsaw (Poland); Celler, G.K. [Institute for Advanced Materials, Devices, and Nanotechnology (IAMDN)/Department of Materials Science and Engineering, Rutgers University, New Brunswick, NJ 08901 (United States)

    2015-12-15

    Oxygen accumulation at buried implantation-damage layers was studied after post-implantation annealing of hydrogen- or deuterium-implanted 4H–SiC. In this study H{sup +} or {sup 2}H{sup +} implantation was carried out at energies E, from 200 keV to 1 MeV, to fluences D, ranging from 2 × 10{sup 16}/cm{sup 2} to 1 × 10{sup 17}/cm{sup 2}. For comparison, the implantation was also done into float-zone (FZ) and Czochralski (CZ) silicon wafers. Post-implantation annealing at temperatures from 400 °C to 1150 °C was performed either in pure argon or in a water vapor. Characterization methods included SIMS, RBS and TEM. At sufficiently high doses, hydrogen implantation into semiconductors leads to the irreversible formation of a planar zone of microcavities, bubbles and other extended defects located at the maximum of deposited energy. This kind of highly perturbed layer, containing large amounts of agglomerated hydrogen is known to efficiently getter a number of impurities. Oxygen was detected in both CZ and FZ silicon subjected to Smart-Cut™ processing. We have identified, by SIMS profiling, a considerable oxygen peak situated at the interface between the SiC substrate and a layer implanted with 1 × 10{sup 17} H ions/cm{sup 2} and heated to 1150 °C in either H{sub 2}O vapor or in a nominally pure Ar. In view of a lack of convincing evidence that a hexagonal SiC might contain substantial amounts of oxygen, the objective of the present study was to identify the source and possible transport mechanism of oxygen species to the cavity band. Through the analysis of several implants annealed at various conditions, we conclude that, besides diffusion from the bulk or from surface oxides, an alternative path for oxygen agglomeration is migration of gaseous O{sub 2} or H{sub 2}O from the edge of the sample through the porous layer.

  20. Electronic Structure of SiC(310)Twin Boundary Doped With B,N,Al and Ti

    Institute of Scientific and Technical Information of China (English)

    YE Yajing; ZHANG Litong; SU Kehe; CHENG Laifei; XU Yongdong

    2009-01-01

    Doping of boron,nitrogen,aluminum and titanium in the SiC(310)twin boundary was investigated,and the first-principle calculation was used to analyze the underlying mechanism of excellent creep resistance and strength of Sylramic and Tyranno SA SiC fibers.The electronic struc-tures were also analyzed and compared.The results of Mulliken overlap populations,electron density differences and density of states reveal that doping of B or N atom reinforces SiC GBs bonding, however,doping of Al or Ti atom weakens SiC GBs bonding.The reinforced SiC GBs will largely prevent atoms from sliding near GBs.The experimental results would be one of the reasons which lead to the reinforcement of either creep resistance or the strength of SiC fibers.

  1. Microwave Absorption Properties of Ni-Foped SiC Powders in the 2-18 GHz Frequency Range

    Science.gov (United States)

    Jin, Hai-Bo; Li, Dan; Cao, Mao-Sheng; Dou, Yan-Kun; Chen, Tao; Wen, Bo; Simeon, Agathopoulos

    2011-03-01

    Ni-doped SiC powder with improved dielectric and microwave absorption properties was prepared by self-propagating high-temperature synthesis (SHS). The XRD analysis of the as-synthesized powders suggests that Ni is accommodated in the sites of Si in the lattice of SiC, which shrinks in the presence of Ni. The experimental results show an improvement in the dielectric properties of the Ni-doped SiC powder in the frequency range of 2-18 GHz. The bandwidth of the reflection loss below -10 dB is broadened from 3.04 (for pure SiC) to 4.56 GHz (for Ni-doped SiC), as well as the maximum reflection loss of produced powders from 13.34 to 22.57 dB, indicating that Ni-doped SiC could be used as an effective microwave absorption material.

  2. Microwave Absorption Properties of Ni-Foped SiC Powders in the 2-18 GHz Frequency Range

    Institute of Scientific and Technical Information of China (English)

    JIN Hai-Bo; LI Dan; CAO Mao-Sheng; DOU Yan-Kun; CHEN Tao; WEN Bo; Simeon Agathopoulos

    2011-01-01

    Ni-doped SiC powder with improved dielectric and microwave absorption properties was prepared by selfpropagating high-temperature synthesis(SHS). The XRD analysis of the asynthesized powders suggests that Ni is accommodated in the sites of Si in the lattice of SiC, which shrinks in the presence of Ni. The experimental results show an improvement in the dielectric properties of the Ni-doped SiC powder in the frequency range of 2-18 GHz. The bandwidth of the reflection loss below-10 dB is broadened from 3.04(for pure SiC) to 4.56 GHz (for Ni-doped SiC), as well as the maximum reflection loss of produced powders from 13.34 to 22.57dB, indicating that Ni-doped SiC could be used as an effective microwave absorption material.

  3. Amplifiers dedicated for large area SiC photodiodes

    Science.gov (United States)

    Doroz, P.; Duk, M.; Korwin-Pawlowski, M. L.; Borecki, M.

    2016-09-01

    Large area SiC photodiodes find applications in optoelectronic sensors working at special conditions. These conditions include detection of UV radiation in harsh environment. Moreover, the mentioned sensors have to be selective and resistant to unwanted signals. For this purpose, the modulation of light at source unit and the rejection of constant current and low frequency component of signal at detector unit are used. The popular frequency used for modulation in such sensor is 1kHz. The large area photodiodes are characterized by a large capacitance and low shunt resistance that varies with polarization of the photodiode and can significantly modify the conditions of signal pre-amplification. In this paper two pre-amplifiers topology are analyzed: the transimpedance amplifier and the non-inverting voltage to voltage amplifier with negative feedback. The feedback loops of both pre-amplifiers are equipped with elements used for initial constant current and low frequency signals rejections. Both circuits are analyzed and compared using simulation and experimental approaches.

  4. Development of Cu Reinforced SiC Particulate Composites

    Science.gov (United States)

    Singh, Harshpreet; Kumar, Lailesh; Nasimul Alam, Syed

    2015-02-01

    This paper presents the results of Cu-SiCp composites developed by powder metallurgy route and an attempt has been made to make a comparison between the composites developed by using unmilled Cu powder and milled Cu powder. SiC particles as reinforcement was blended with unmilled and as-milled Cu powderwith reinforcement contents of 10, 20, 30, 40 vol. % by powder metallurgy route. The mechanical properties of pure Cu and the composites developed were studied after sintering at 900°C for 1 h. Density of the sintered composites were found out based on the Archimedes' principle. X-ray diffraction of all the composites was done in order to determine the various phases in the composites. Scanning electron microscopy (SEM) and EDS (electron diffraction x-ray spectroscopy) was carried out for the microstructural analysis of the composites. Vickers microhardness tester was used to find out the hardness of the samples. Wear properties of the developed composites were also studied.

  5. MuSIC: delivering the world's most intense muon beam

    CERN Document Server

    Cook, S; Edmonds, A; Fukuda, M; Hatanaka, K; Hino, Y; Kuno, Y; Lancaster, M; Mori, Y; Ogitsu, T; Sakamoto, H; Sato, A; Tran, N H; Truong, N M; Wing, M; Yamamoto, A; Yoshida, M

    2016-01-01

    A new muon beamline, muon science innovative channel (MuSIC), was set up at the Research Centre for Nuclear Physics (RCNP), Osaka University, in Osaka, Japan, using the 392 MeV proton beam impinging on a target. The production of an intense muon beam relies on the efficient capture of pions, which subsequently decay to muons, using a novel superconducting solenoid magnet system. After the pion-capture solenoid the first $36^\\circ$ of the curved muon transport line was commissioned and the muon flux was measured. In order to detect muons, a target of either copper or magnesium was placed to stop muons at the end of the muon beamline. Two stations of plastic scintillators located upstream and downstream from the muon target were used to reconstruct the decay spectrum of muons. In a complementary method to detect negatively-charged muons, the X-ray spectrum yielded by muonic atoms in the target were measured in a germanium detector. Measurements, at a proton beam current of 6 pA, yielded $(10.4 \\pm 2.7) \\times 1...

  6. Matrix-grain-bridging contributions to the toughness of SiC composites with alumina-coated SiC platelets

    Energy Technology Data Exchange (ETDEWEB)

    Cao, J.J.; He, Y.; MoberlyChan, W.J.; De Jonghe, L.C. [Univ. of California, Berkeley, CA (United States). Dept. of Materials Science and Mineral Engineering]|[Lawrence Berkeley Lab., CA (United States). Materials Science Div.

    1996-05-01

    Silicon carbide composites were fabricated through the incorporation of alumina-coated SiC platelets into a SiC matrix. Mechanical properties were evaluated in direct comparison with a commercial Hexoloy SiC. The fracture toughness of the composite, with a fine grained {beta}-SiC matrix, was twice that of the commercial material. The alumina-coating on the platelets provided a weak interface to promote crack deflection and platelet bridging, as well as easing densification of the composites. On the other hand, a three-fold increase in fracture toughness (9.1 MPa {radical}m) of an in situ toughened monolithic SiC was achieved by processing at higher temperatures, promoting the {beta}-to-{alpha} phase transformation and forming a microstructure containing high-aspect-ration plate-shaped grains. Efforts were made to combine the effects of coated-platelets reinforcement and in situ toughening in the matrix. Moderate high toughness (8 MPa {radical}m) was achieved by coupled toughening. The contribution of matrix-grain-bridging, however, was limited by the processing temperature at which the oxide coating was stable.

  7. Method for increasing -SiC yield on solid state reaction of coal fly ash and activated carbon powder

    Indian Academy of Sciences (India)

    Sulardjaka; Jamasri; M W Wildan; Kusnanto

    2011-07-01

    A novel process for increasing -SiC yield on solid state reaction of coal fly ash and micro powder activated carbon powder has been proposed. -SiC powder was synthesized at temperature 1300°C for 2 h under vacuum condition with 1 l/min argon flow. Cycling synthesis process has been developed for increasing -SiC yield on solid state reaction of coal fly ash and activated carbon powder. Synthesized products were analyzed by XRD with Cu-K radiation, FTIR spectrometer and SEM fitted with EDAX. The results show that the amount of relative -SiC is increased with the number of cycling synthesis.

  8. Uniformity's influence of silica xerogel on synthesis efficiency of SiC nanorods by carbothermal reduction

    Energy Technology Data Exchange (ETDEWEB)

    Huynh Thi Ha; Nguyen Thi Thu Ha; Phan Viet Phong; Dao Tran Cao; Le Quang Huy; Nguyen The Quynh [Institute of Materials Science, Vietnam Academy of Science and Technology, 18 Hoang Quoc Viet Road, Cau Giay Distr., Hanoi (Viet Nam); Cao Tuan Anh [Institute of Physics, Vietnam Academy of Science and Technology, 10 Dao Tan Street, Badinh Distr., Hanoi (Viet Nam)], E-mail: haht@ims.vast.ac.vn

    2009-09-01

    Silica xerogels containing nanocarbon were milled for several hours before the carbothermal reduction processing. The formation of SiC nanorods was investigated at different annealing temperatures. It is shown that the formation temperature of SiC nanorods can be decreased if the powder size of milled silica xerogels is lower than 100 nm. The morphology, structure and production efficiency of synthesized SiC were determined by scanning electron microscopy SEM, X-ray diffraction XRD and thermo-gravimetric analysis TGA measurements. It is evident that production efficiency of synthesized SiC nanorods clearly depends on uniformity of precursor materials.

  9. Experimental Investigation of Mechanical and Thermal properties of sisal fibre reinforced composite and effect of sic filler material

    Science.gov (United States)

    Surya Teja, Malla; Ramana, M. V.; Sriramulu, D.; Rao, C. J.

    2016-09-01

    With a view of exploring the potential use of natural recourses, we made an attempt to fabricate sisal fibre polymer composites by hand lay-up method. Natural fiber composites are renewable, cheap and biodegradable. Their easy availability, lower density, higher specific properties, lower cost, satisfactory mechanical and thermal properties, non-corrosive nature, makes them an attractive ecological alternative to glass, carbon or other man-made synthetic fibers. In this work, the effect of SiC on mechanical and thermal properties of natural sisal fiber composites are investigated. The composite has been made with and without SiC incorporating natural sisal fiber with polyester as bonding material. The experimental outcomes exhibited that the tensile strength of composite with 10%SiC 2.53 times greater than that of composite without SiC. The impact strength of composite with 10% SiC is 1.73 times greater than that of composite without SiC plain polyester. Thermal properties studied include thermal conductivity, specific heat capacity, thermal diffusivity, thermal degradation and stability. Three different samples with 0%, 5%, 10% SiC powder are considered. With the addition of SiC filler powder, thermal conductivity increases, specific heat capacity gradually increases then decreases, thermal diffusivity increases and thermal stability improves with Sic powder.

  10. The streptococcal inhibitor of complement (SIC) protects Streptococcus pyogenes from bacteriocin-like inhibitory substance (BLIS) from Streptococcus salivarius.

    Science.gov (United States)

    Minami, Masaaki; Ohmori, Daisuke; Tatsuno, Ichiro; Isaka, Masanori; Kawamura, Yoshiaki; Ohta, Michio; Hasegawa, Tadao

    2009-09-01

    Streptococcus salivarius inhibits the growth of Streptococcus pyogenes in vitro. Streptococcus pyogenes has various virulence factors, including the streptococcus inhibitor of complement (SIC). Although SIC inhibits the activity of the peptides LL-37 and NAP1, the relationship between SIC and the bacteriocin-like inhibitory substance (BLIS) has not been elucidated. Here, we evaluated whether S. salivarius BLIS affects S. pyogenes SIC. We created three deltasic mutant strains from three S. pyogenes strains and performed deferred antagonism assays. The test strains were BLIS-positive S. salivarius JCM5707 and BLIS-negative S. salivarius NCU12. Deferred antagonism assays with JCM5707 showed that the inhibitory zones in the three deltasic mutant strains were wider than those in the three wild-type strains. Streptococcus pyogenes was cultured in BLIS-containing broth and the change in SIC in the supernatant was assessed by two-dimensional gel electrophoresis (2-DE). The 2-DE analysis of S. pyogenes exoproteins with the JCM5707 supernatant showed reduced SIC compared with those without the JCM5707 supernatant. Changes in sic mRNA levels affected by S. salivarius BLIS were evaluated by a reverse transcriptase-PCR. The sic mRNA level was affected more by the BLIS-positive S. salivarius than by the BLIS-negative strain. Our result indicates that SIC plays a role in the inhibition of S. salivarius BLIS.

  11. Wear Behaviour of Al-6061/SiC Metal Matrix Composites

    Science.gov (United States)

    Mishra, Ashok Kumar; Srivastava, Rajesh Kumar

    2016-06-01

    Aluminium Al-6061 base composites, reinforced with SiC particles having mesh size of 150 and 600, which is fabricated by stir casting method and their wear resistance and coefficient of friction has been investigated in the present study as a function of applied load and weight fraction of SiC varying from 5, 10, 15, 20, 25, 30, 35 and 40 %. The dry sliding wear properties of composites were investigated by using Pin-on-disk testing machine at sliding velocity of 2 m/s and sliding distance of 2000 m over a various loads of 10, 20 and 30 N. The result shows that the reinforcement of the metal matrix with SiC particulates up to weight percentage of 35 % reduces the wear rate. The result also show that the wear of the test specimens increases with the increasing load and sliding distance. The coefficient of friction slightly decreases with increasing weight percentage of reinforcements. The wear surfaces are examined by optical microscopy which shows that the large grooved regions and cavities with ceramic particles are found on the worn surface of the composite alloy. This indicates an abrasive wear mechanism, which is essentially a result of hard ceramic particles exposed on the worn surfaces. Further, it was found from the experimentation that the wear rate decreases linearly with increasing weight fraction of SiC and average coefficient of friction decreases linearly with increasing applied load, weight fraction of SiC and mesh size of SiC. The best result has been obtained at 35 % weight fraction and 600 mesh size of SiC.

  12. Diffusion of Ag, Au and Cs implants in MAX phase Ti3SiC2

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, Weilin; Henager, Charles H.; Varga, Tamas; Jung, Hee Joon; Overman, Nicole R.; Zhang, Chonghong; Gou, Jie

    2015-05-16

    MAX phases (M: early transition metal; A: elements in group 13 or 14; X: C or N), such as titanium silicon carbide (Ti3SiC2), have a unique combination of both metallic and ceramic properties, which make them attractive for potential nuclear applications. Ti3SiC2 has been considered as a possible fuel cladding material. This study reports on the diffusivities of fission product surrogates (Ag and Cs) and a noble metal Au (with diffusion behavior similar to Ag) in this ternary compound at elevated temperatures, as well as in dual-phase nanocomposite of Ti3SiC2/3C-SiC and polycrystalline CVD 3C-SiC for behavior comparisons. Samples were implanted with Ag, Au or Cs ions and characterized with various methods, including x-ray diffraction, electron backscatter diffraction, energy dispersive x-ray spectroscopy, Rutherford backscattering spectrometry, helium ion microscopy, and transmission electron microscopy. The results show that in contrast to immobile Ag in 3C-SiC, there is a significant outward diffusion of Ag in Ti3SiC2 within the dual-phase nanocomposite during Ag ion implantation at 873 K. Similar behavior of Au in polycrystalline Ti3SiC2 was also observed. Cs out-diffusion and release from Ti3SiC2 occurred during post-implantation thermal annealing at 973 K. This study suggests caution and further studies in consideration of Ti3SiC2 as a fuel cladding material for advanced nuclear reactors operating at very high temperatures.

  13. A study on the high densification process of CVI SiC composites

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Doo Jin; Son, Ji Hye; Jun, Jin O. [Yonsei University, Seoul (Korea)

    2002-03-01

    A novel process called in-situ whisker growing and matrix filling was designed to overcome the problem of conventional ICVI process which make composites porous. Fiber reinforced SiC matrix composites were successfully fabricated by the process in the present study. Methyltrichlorosilane(CH{sub 3}SiCl{sub 3},MTS) was chosen as a source precursor of SiC. Hydrogen was used as a dilute gas for the in-situ whisker growing process and nitrogen was used as a dilute gas for the SiC matrix filling process. In order to increase the fracture toughness of the composites, the fibers were coated with a thin pyrolytic carbon layer at 1000 .deg. C before ICVI process. In case of the monolithic SiC-SiC composites, SiC whisker was grown at the temperature of 1100 .deg. C with the input gas ratio of 15. SiC-SiC composites obtained by the suggested process were denser than the composites obtained by conventional ICVI process. Also, in case of the stacked SiC-SiC composites, SiC whisker was grown at the temperature of 1100 .deg. C with the input gas ratio of 20 and 30. In addition, the SiC whisker was also grown at 1150 .deg.C with the input gas ratio of 20. The optimum condition of the in-situ whisker growing for the following matrix filling process is 1100 .deg. C, {alpha}=20, and 2hr. The designed process, in-situ whisker growing and matrix filling, was confirmed as a novel process which can fabricate high density fiber reinforced SiC matrix composites. 40 refs., 24 figs., 7 tabs. (Author)

  14. Effect of SiC particles on microarc oxidation process of magnesium matrix composites

    Science.gov (United States)

    Wang, Y. Q.; Wang, X. J.; Gong, W. X.; Wu, K.; Wang, F. H.

    2013-10-01

    SiC particles are an important reinforced phase in metal matrix composites. Their effect on the microarc oxidation (MAO, also named plasma electrolytic oxidation-PEO) process of SiCp/AZ91 Mg matrix composites (MMCs) was studied and the mechanism was revealed. The corrosion resistance of MAO coating was also investigated. Voltage-time curves during MAO were recorded to study the barrier film status on the composites. Scanning electron microscopy was used to characterize the existing state of SiC particles in MAO. Energy dispersive X-ray spectrometry and X-ray photoelectron spectroscopy were used to analyze the chemical composition of the coating. Corrosion resistance of the bare and coated composites was evaluated by potentiodynamic polarization curves in 3.5% NaCl solution. Results showed that the integrality and electrical insulation properties of the barrier film on the composites were destroyed by the SiC particles. Consequently, the sparking discharge at the early stage of MAO was inhibited, and the growth efficiency of the MAO coating decreased with the increase in the volume fraction of SiC particles. SiC particles did not exist stably during MAO; they were oxidized or partially oxidized into SiO2 before the overall sparking discharge. The transformation from semi-conductive SiC to insulating SiO2 by oxidation restrained the current leakage at the original SiC positions and then promoted sparking discharge and coating growth. The corrosion current density of SiCp/AZ91 MMCs was reduced by two orders of magnitude after MAO treatment. However, the corrosion resistances of the coated composites were lower than that of the coated alloy.

  15. Effect of SiC particles on microarc oxidation process of magnesium matrix composites

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Y.Q., E-mail: qiuorwang@hrbeu.edu.cn [Corrosion and Protection Laboratory, Education Ministry Key Laboratory of Superlight Materials and Surface Technology, Harbin Engineering University, Harbin 150001 (China); Wang, X.J. [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Gong, W.X. [Corrosion and Protection Laboratory, Education Ministry Key Laboratory of Superlight Materials and Surface Technology, Harbin Engineering University, Harbin 150001 (China); Wu, K. [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Wang, F.H. [Corrosion and Protection Laboratory, Education Ministry Key Laboratory of Superlight Materials and Surface Technology, Harbin Engineering University, Harbin 150001 (China); State Key Laboratory for Corrosion and Protection, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016 (China)

    2013-10-15

    SiC particles are an important reinforced phase in metal matrix composites. Their effect on the microarc oxidation (MAO, also named plasma electrolytic oxidation-PEO) process of SiC{sub p}/AZ91 Mg matrix composites (MMCs) was studied and the mechanism was revealed. The corrosion resistance of MAO coating was also investigated. Voltage–time curves during MAO were recorded to study the barrier film status on the composites. Scanning electron microscopy was used to characterize the existing state of SiC particles in MAO. Energy dispersive X-ray spectrometry and X-ray photoelectron spectroscopy were used to analyze the chemical composition of the coating. Corrosion resistance of the bare and coated composites was evaluated by potentiodynamic polarization curves in 3.5% NaCl solution. Results showed that the integrality and electrical insulation properties of the barrier film on the composites were destroyed by the SiC particles. Consequently, the sparking discharge at the early stage of MAO was inhibited, and the growth efficiency of the MAO coating decreased with the increase in the volume fraction of SiC particles. SiC particles did not exist stably during MAO; they were oxidized or partially oxidized into SiO{sub 2} before the overall sparking discharge. The transformation from semi-conductive SiC to insulating SiO{sub 2} by oxidation restrained the current leakage at the original SiC positions and then promoted sparking discharge and coating growth. The corrosion current density of SiC{sub p}/AZ91 MMCs was reduced by two orders of magnitude after MAO treatment. However, the corrosion resistances of the coated composites were lower than that of the coated alloy.

  16. SiC JFET Transistor Circuit Model for Extreme Temperature Range

    Science.gov (United States)

    Neudeck, Philip G.

    2008-01-01

    A technique for simulating extreme-temperature operation of integrated circuits that incorporate silicon carbide (SiC) junction field-effect transistors (JFETs) has been developed. The technique involves modification of NGSPICE, which is an open-source version of the popular Simulation Program with Integrated Circuit Emphasis (SPICE) general-purpose analog-integrated-circuit-simulating software. NGSPICE in its unmodified form is used for simulating and designing circuits made from silicon-based transistors that operate at or near room temperature. Two rapid modifications of NGSPICE source code enable SiC JFETs to be simulated to 500 C using the well-known Level 1 model for silicon metal oxide semiconductor field-effect transistors (MOSFETs). First, the default value of the MOSFET surface potential must be changed. In the unmodified source code, this parameter has a value of 0.6, which corresponds to slightly more than half the bandgap of silicon. In NGSPICE modified to simulate SiC JFETs, this parameter is changed to a value of 1.6, corresponding to slightly more than half the bandgap of SiC. The second modification consists of changing the temperature dependence of MOSFET transconductance and saturation parameters. The unmodified NGSPICE source code implements a T(sup -1.5) temperature dependence for these parameters. In order to mimic the temperature behavior of experimental SiC JFETs, a T(sup -1.3) temperature dependence must be implemented in the NGSPICE source code. Following these two simple modifications, the Level 1 MOSFET model of the NGSPICE circuit simulation program reasonably approximates the measured high-temperature behavior of experimental SiC JFETs properly operated with zero or reverse bias applied to the gate terminal. Modification of additional silicon parameters in the NGSPICE source code was not necessary to model experimental SiC JFET current-voltage performance across the entire temperature range from 25 to 500 C.

  17. Vacancy-induced mechanical stabilization of cubic tungsten nitride

    Science.gov (United States)

    Balasubramanian, Karthik; Khare, Sanjay; Gall, Daniel

    2016-11-01

    First-principles methods are employed to determine the structural, mechanical, and thermodynamic reasons for the experimentally reported cubic WN phase. The defect-free rocksalt phase is both mechanically and thermodynamically unstable, with a negative single crystal shear modulus C44=-86 GPa and a positive enthalpy of formation per formula unit Hf=0.623 eV with respect to molecular nitrogen and metallic W. In contrast, WN in the NbO phase is stable, with C44=175 GPa and Hf=-0.839 eV . A charge distribution analysis reveals that the application of shear strain along [100] in rocksalt WN results in an increased overlap of the t2 g orbitals which causes electron migration from the expanded to the shortened W-W bond axes, yielding a negative shear modulus due to an energy reduction associated with new bonding states 8.1-8.7 eV below the Fermi level. A corresponding shear strain in WN in the NbO phase results in an energy increase and a positive shear modulus. The mechanical stability transition from the NaCl to the NbO phase is explored using supercell calculations of the NaCl structure containing Cv=0 %-25 % cation and anion vacancies, while keeping the N-to-W ratio constant at unity. The structure is mechanically unstable for Cvconcentration, the isotropic elastic modulus E of cubic WN is zero, but increases steeply to E =445 GPa for Cv=10 % , and then less steeply to E =561 GPa for Cv=25 % . Correspondingly, the hardness estimated using Tian's model increases from 0 to 15 to 26 GPa as Cv increases from 5% to 10% to 25%, indicating that a relatively small vacancy concentration stabilizes the cubic WN phase and that the large variations in reported mechanical properties of WN can be attributed to relatively small changes in Cv.

  18. Cubic Phases, Cubosomes and Ethosomes for Cutaneous Application.

    Science.gov (United States)

    Esposito, Elisabetta; Drechsler, Markus; Nastruzzi, Claudio; Cortesi, Rita

    2016-01-01

    Cutaneous administration represents a good strategy to treat skin diseases, avoiding side effects related to systemic administration. Apart from conventional therapy, based on the use of semi-solid formulation such as gel, ointments and creams, recently the use of specialized delivery systems based on lipid has been taken hold. This review provides an overview about the use of cubic phases, cubosomes and ethosomes, as lipid systems recently proposed to treat skin pathologies. In addition in the final part of the review cubic phases, cubosomes and ethosomes are compared to solid lipid nanoparticles and lecithin organogel with respect to their potential as delivery systems for cutaneous application. It has been reported that lipid nanosystems are able to dissolve and deliver active molecules in a controlled fashion, thereby improving their bioavailability and reducing side-effects. Particularly lipid matrixes are characterized by skin affinity and biocompatibility allowing their application on skin. Indeed, after cutaneous administration, the lipid matrix of cubic phases and cubosomes coalesces with the lipids of the stratum comeum and leads to the formation of a lipid depot from which the drug associated to the nanosystem can be released in the deeper skin strata in a controlled manner. Ethosomes are characterized by a malleable structure that promotes their interaction with skin, improving their potential as skin delivery systems with respect to liposomes. Also in the case of solid lipid nanoparticles it has been suggested a deep interaction between lipid matrix and skin strata that endorses sustained and prolonged drug release. Concerning lecithin organogel, the peculiar structure of this system, where lecithin exerts a penetration enhancer role, allows a deep interaction with skin strata, promoting the transdermal absorption of the encapsulated drugs.

  19. Cubature Formula and Interpolation on the Cubic Domain

    Institute of Scientific and Technical Information of China (English)

    Huiyuan Li; Jiachang Sun; Yuan Xu

    2009-01-01

    Several cubature formulas on the cubic domains are derived using the dis-crete Fourier analysis associated with lattice tiling, as developed in [10]. The main results consist of a new derivation of the Gaussian type cubature for the product Cheby-shev weight functions and associated interpolation polynomials on [-1,1]2, as well as new results on [-1,1]3. In particular, compact formulas for the fundamental interpo-lation polynomials are derived, based on n3/4 + (n2) nodes of a cubature formula on [-1,1]3.

  20. CLOSED SMOOTH SURFACE DEFINED FROM CUBIC TRIANGULAR SPLINES

    Institute of Scientific and Technical Information of China (English)

    Ren-zhong Feng; Ren-hong Wang

    2005-01-01

    In order to construct closed surfaces with continuous unit normal, we introduce a new spline space on an arbitrary closed mesh of three-sided faces. Our approach generalizes an idea of Goodman and is based on the concept of 'Geometric continuity' for piecewise polynomial parametrizations. The functions in the spline space restricted to the faces are cubic triangular polynomials. A basis of the spline space is constructed of positive functions which sum to 1. It is also shown that the space is suitable for interpolating data at the midpoints of the faces.

  1. Exotic Universal Solutions in Cubic Superstring Field Theory

    CERN Document Server

    Erler, Theodore

    2010-01-01

    We present a class of analytic solutions of cubic superstring field theory in the universal sector on a non-BPS D-brane. Computation of the action and gauge invariant overlap reveal that the solutions carry half the tension of a non-BPS D-brane. However, the solutions do not satisfy the reality condition. In fact, they display an intriguing topological structure: We find evidence that conjugation of the solutions is equivalent to a gauge transformation that cannot be continuously deformed to the identity.

  2. Research on the Cutting Performance of Cubic Boron Nitride Tools

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    There were only two kinds of superhard tool material at the past, i.e. diamond and cubic boron nitride (CBN). Manmade diamond and CBN are manufactured by the middle of 20th century. Various manufacturing methods and manmade superhard materials were developed later. They were widely used in different industry and science areas. Recently, a new kind of superhard tool material, C 3N 4 coating film, had been developed. American physical scientists, A. M. Liu and M. L. Cohen, designed a new kind of inorganic c...

  3. Self-trapping transition in nonlinear cubic lattices

    CERN Document Server

    Naether, Uta; Guzmán-Silva, Diego; Molina, Mario I; Vicencio, Rodrigo A

    2013-01-01

    We explore the fundamental question about the critical nonlinearity value needed to dynamically localize energy in discrete nonlinear cubic (Kerr) lattices. We focus on the effective frequency and participation ratio of the profile to determine the transition into localization, performing several numerical simulations in one-, two-, and three-dimensional lattices. A simple criterium is developed - for the case of an initially localized excitation - defining the transition region in parameter space ("dynamical tongue") from a delocalized to a localized profile. A general analytical estimate of the critical nonlinearity value for which this transition occurs is obtained.

  4. Cubic versus spherical magnetic nanoparticles: the role of surface anisotropy.

    Science.gov (United States)

    Salazar-Alvarez, G; Qin, J; Sepelák, V; Bergmann, I; Vasilakaki, M; Trohidou, K N; Ardisson, J D; Macedo, W A A; Mikhaylova, M; Muhammed, M; Baró, M D; Nogués, J

    2008-10-08

    The magnetic properties of maghemite (gamma-Fe2O3) cubic and spherical nanoparticles of similar sizes have been experimentally and theoretically studied. The blocking temperature, T(B), of the nanoparticles depends on their shape, with the spherical ones exhibiting larger T(B). Other low temperature properties such as saturation magnetization, coercivity, loop shift or spin canting are rather similar. The experimental effective anisotropy and the Monte Carlo simulations indicate that the different random surface anisotropy of the two morphologies combined with the low magnetocrystalline anisotropy of gamma-Fe2O3 is the origin of these effects.

  5. Configuration spaces of an embedding torus and cubical spaces

    OpenAIRE

    Jourdan, Jean-Philippe

    2006-01-01

    For a smooth manifold M obtained as an embedding torus, A U Cx[-1,1], we consider the ordered configuration space F_k(M) of k distinct points in M. We show that there is a homotopical cubical resolution of F_k(M) defined from the configuration spaces of A and C. From it, we deduce a universal method for the computation of the pure braid groups of a manifold. We illustrate the method in the case of the Mobius band.

  6. Ionic Conduction in Cubic Zirconias at Low Temperatures

    Institute of Scientific and Technical Information of China (English)

    Ying LI; Yunfa CHEN; Jianghong GONG

    2004-01-01

    The ac conductivities of Y2O3 or CaO-stabilized cubic zirconias were obtained from complex impedance measurements in the temperature range from 373 to 473 K. By analyzing the temperature-dependence of the resultant dc conductivities, it was shown that the activation energies for conduction are lower than those reported previously for the same materials at high temperatures. Comparing the activation energy data with the theoretically estimated values revealed that there may exist a certain, although very small, amount of free oxygen vacancies in the test samples at low temperatures and the conduction in the test samples is a result of the migration of these free oxygen vacancies.

  7. Cubic to tetragonal crystal lattice reconstruction during ordering or decomposition

    Energy Technology Data Exchange (ETDEWEB)

    Cheong, Byung-kl [Carnegie-Mellon Univ., Pittsburgh, PA (United States). Dept. of Materials Science and Engineering

    1992-09-01

    This thesis studied thermodynamic stability and morphology of product phases in diffusional phase transformations involving cubic-to-tetragonal crystal lattice reconstructions. Two different kinds of diffusional transformations were examined: L1{sub 0} ordering (fcc to fct lattice change) and decomposition of off-stoichiometric B2 ordering alloys accompanying bcc to fcc Bain transformation. In the first case, Fe-45 at.% Pd alloys were studied by TEM; in the second, the Bain strain relaxation during decomposition of hyper-eutectoid Cu-9.04 wt% Be alloy was studied. CuAu and InMg were also studied.

  8. On the {P2, P3}-Factor of Cubic Graphs

    Institute of Scientific and Technical Information of China (English)

    GOU Kui-xiang; SUN Liang

    2005-01-01

    Let G = ( V, E) be a finite simple graph and Pn denote the path of order n. A spanning subgraph F is called a {P2, P3}-factor of G if each component of F is isomorphic to P2 or P3. With the path-covering method, it is proved that any connected cubic graph with at least 5 vertices has a { P2, P3 }-factor F such that | P3 (F) |≥|P2 (F) |, where P2 (F) and P3 (F) denote the set of components of P2 and P3 in F,respectively.

  9. Inhomogeneous atomic Bose-Fermi mixtures in cubic lattices.

    Science.gov (United States)

    Cramer, M; Eisert, J; Illuminati, F

    2004-11-05

    We determine the ground state properties of inhomogeneous mixtures of bosons and fermions in cubic lattices and parabolic confining potentials. For finite hopping we determine the domain boundaries between Mott-insulator plateaux and hopping-dominated regions for lattices of arbitrary dimension within mean-field and perturbation theory. The results are compared with a new numerical method that is based on a Gutzwiller variational approach for the bosons and an exact treatment for the fermions. The findings can be applied as a guideline for future experiments with trapped atomic Bose-Fermi mixtures in optical lattices.

  10. Compressibility and thermal expansion of cubic silicon nitride

    DEFF Research Database (Denmark)

    Jiang, Jianzhong; Lindelov, H.; Gerward, Leif

    2002-01-01

    The compressibility and thermal expansion of the cubic silicon nitride (c-Si3N4) phase have been investigated by performing in situ x-ray powder-diffraction measurements using synchrotron radiation, complemented with computer simulations by means of first-principles calculations. The bulk...... compressibility of the c-Si3N4 phase originates from the average of both Si-N tetrahedral and octahedral compressibilities where the octahedral polyhedra are less compressible than the tetrahedral ones. The origin of the unit cell expansion is revealed to be due to the increase of the octahedral Si-N and N-N bond...

  11. Theoretical and Experimental Study of Time Reversal in Cubic Crystals

    Institute of Scientific and Technical Information of China (English)

    陆铭慧; 张碧星; 汪承灏

    2004-01-01

    The self-adaptive focusing of the time reversal in anisotropic media is studied theoretically and experimentally. It is conducted for the compressional wave field in the cubic crystal silicon. The experimental result is in agreement with our theoretical analysis. The focusing gain and the displacement distributions of the time reversal field are analysed in detail. It is shown that the waves from different elements of the transducer array arrive at the original place of the source simultaneously after the time reversal operation. The waveform distortions caused by the velocity anisotropy can automatically be compensated for after the time reversal processing.

  12. Rotary Ultrasonic Machining of Poly-Crystalline Cubic Boron Nitride

    Directory of Open Access Journals (Sweden)

    Kuruc Marcel

    2014-12-01

    Full Text Available Poly-crystalline cubic boron nitride (PCBN is one of the hardest material. Generally, so hard materials could not be machined by conventional machining methods. Therefore, for this purpose, advanced machining methods have been designed. Rotary ultrasonic machining (RUM is included among them. RUM is based on abrasive removing mechanism of ultrasonic vibrating diamond particles, which are bonded on active part of rotating tool. It is suitable especially for machining hard and brittle materials (such as glass and ceramics. This contribution investigates this advanced machining method during machining of PCBN.

  13. Cubic Plus Association Equation of State for Flow Assurance Projects

    DEFF Research Database (Denmark)

    dos Santos, Leticia Cotia; Abunahman, Samir Silva; Tavares, Frederico Wanderley

    2015-01-01

    Thermodynamic hydrate inhibitors such as methanol, ethanol, (mono) ethylene glycol (MEG), and triethylene glycol (TEG) are widely used in the oil and gas industry. On modeling these compounds, we show here how the CPA equation of state was implemented in an in-house process simulator as an in......-built model: To validate the implementation, we show calulations for binary systems containing hydrate inhibitors and water or hydrocarbons using the Cubic Plus Association (CPA) and Soave-Redlich-Kwong (SRK) equation of states, also comparing against experimental data. For streams containing natural gas...

  14. Elasticity tensor and ultrasonic velocities for anisotropic cubic polycrystal

    Institute of Scientific and Technical Information of China (English)

    2008-01-01

    The orientation distribution of crystallites in a polycrystal can be described by the orientation distribution function(ODF) . The ODF can be expanded under the Wigner D-bases. The expanded coefficients in the ODF are called the texture coefficients. In this paper,we use the Clebsch-Gordan expression to derive an explicit expression of the elasticity tensor for an anisotropic cubic polycrystal. The elasticity tensor contains three material constants and nine texture coefficients. In order to measure the nine texture coefficients by ultrasonic wave,we give relations between the nine texture coefficients and ultrasonic propagation velocities. We also give a numerical example to check the relations.

  15. Tensor tomography of stresses in cubic single crystals

    Directory of Open Access Journals (Sweden)

    Dmitry D. Karov

    2015-03-01

    Full Text Available The possibility of optical tomography applying to investigation of a two-dimensional and a three-dimensional stressed state in single cubic crystals has been studied. Stresses are determined within the framework of the Maxwell piezo-optic law (linear dependence of the permittivity tensor on stresses and weak optical anisotropy. It is shown that a complete reconstruction of stresses in a sample is impossible both by translucence it in the parallel planes system and by using of the elasticity theory equations. For overcoming these difficulties, it is offered to use a method of magnetophotoelasticity.

  16. Oxidation of SiC Fiber-Reinforced SiC Matrix Composites with a BN Interphase

    Science.gov (United States)

    Opila, Elizabeth; Boyd, Meredith K.

    2010-01-01

    SiC-fiber reinforced SiC matrix composites with a BN interphase were oxidized in reduced oxygen partial pressures of oxygen to simulate the environment for hypersonic vehicle leading edge applications. The constituent fibers as well as composite coupons were oxidized in oxygen partial pressures ranging from 1000 ppm O2 to 5% O2 balance argon. Exposure temperatures ranged from 816 C to 1353 C (1500 F to 2450 F). The oxidation kinetics of the coated fibers were monitored by thermogravimetric analysis (TGA). An initial rapid transient weight gain was observed followed by parabolic kinetics. Possible mechanisms for the transient oxidation are discussed. One edge of the composite coupon seal coat was ground off to simulate damage to the composite which allowed oxygen ingress to the interior of the composite. Oxidation kinetics of the coupons were characterized by scanning electron microscopy since the weight changes were minimal. It was found that sealing of the coupon edge by silica formation occurred. Differences in the amount and morphology of the sealing silica as a function of time, temperature and oxygen partial pressure are discussed. Implications for use of these materials for hypersonic vehicle leading edge materials are summarized.

  17. High-Temperature SiC Power Module with Integrated SiC Gate Drivers for Future High-Density Power Electronics Applications

    Energy Technology Data Exchange (ETDEWEB)

    Whitaker, Mr. Bret [APEI, Inc.; Cole, Mr. Zach [APEI, Inc.; Passmore, Mr. Brandon [APEI, Inc.; Martin, Daniel [APEI, Inc.; Mcnutt, Tyler [APEI, Inc.; Lostetter, Dr. Alex [APEI, Inc.; Ericson, Milton Nance [ORNL; Frank, Steven Shane [ORNL; Britton Jr, Charles L [ORNL; Marlino, Laura D [ORNL; Mantooth, Alan [University of Arkansas; Francis, Dr. Matt [University of Arkansas; Lamichhane, Ranjan [University of Arkansas; Shepherd, Dr. Paul [University of Arkansas; Glover, Dr. Michael [University of Arkansas

    2014-01-01

    This paper presents the testing results of an all-silicon carbide (SiC) intelligent power module (IPM) for use in future high-density power electronics applications. The IPM has high-temperature capability and contains both SiC power devices and SiC gate driver integrated circuits (ICs). The high-temperature capability of the SiC gate driver ICs allows for them to be packaged into the power module and be located physically close to the power devices. This provides a distinct advantage by reducing the gate driver loop inductance, which promotes high frequency operation, while also reducing the overall volume of the system through higher levels of integration. The power module was tested in a bridgeless-boost converter to showcase the performance of the module in a system level application. The converter was initially operated with a switching frequency of 200 kHz with a peak output power of approximately 5 kW. The efficiency of the converter was then evaluated experimentally and optimized by increasing the overdrive voltage on the SiC gate driver ICs. Overall a peak efficiency of 97.7% was measured at 3.0 kW output. The converter s switching frequency was then increased to 500 kHz to prove the high frequency capability of the power module was then pushed to its limits and operated at a switching frequency of 500 kHz. With no further optimization of components, the converter was able to operate under these conditions and showed a peak efficiency of 95.0% at an output power of 2.1 kW.

  18. Cubic optical elements for an accommodative intraocular lens.

    Science.gov (United States)

    Simonov, Aleksey N; Vdovin, Gleb; Rombach, Michiel C

    2006-08-21

    We present a new accommodative intraocular lens based on a two-element varifocal Alvarez lens. The intraocular lens consists of (1) an anterior element combining a spherical lens for refractive power with a cubic surface for the varifocal effect, and (2) a posterior element with a cubic surface only. The focal length of the IOL lens changes when the superimposed refractive elements shift in opposite directions in a plane perpendicular to the optical axis. The ciliary muscle will drive the accommodation by a natural process of contraction and relaxation. Results of ray-tracing simulations of the model eye with the two-element intraocular lens are presented for on-axis and off-axis vision. The configuration of the lens is optimized to reduce refractive errors as well as effects of misalignment. A prototype with a clear aperture of ~5.7 mm is manufactured and evaluated in air with a Shack-Hartmann wave-front sensor. It provides an accommodation range of ~4 dioptres in the eye at a ~0.75-mm lateral displacement of the optical elements. The experimentally measured on-axis optical performance of the IOL lens agrees with the theoretically predicted performance.

  19. Nonlinear structure formation in the Cubic Galileon gravity model

    CERN Document Server

    Barreira, Alexandre; Hellwing, Wojciech A; Baugh, Carlton M; Pascoli, Silvia

    2013-01-01

    We model the linear and nonlinear growth of large scale structure in the Cubic Galileon gravity model, by running a suite of N-body cosmological simulations using the {\\tt ECOSMOG} code. Our simulations include the Vainshtein screening effect, which reconciles the Cubic Galileon model with local tests of gravity. In the linear regime, the amplitude of the matter power spectrum increases by $\\sim 25%$ with respect to the standard $\\Lambda$CDM model today. The modified expansion rate accounts for $\\sim 20%$ of this enhancement, while the fifth force is responsible for only $\\sim 5%$. This is because the effective unscreened gravitational strength deviates from standard gravity only at late times, even though it can be twice as large today. In the nonlinear regime ($k \\gtrsim 0.1 h\\rm{Mpc}^{-1}$), the fifth force leads to only a modest increase ($\\lesssim 8%$) in the clustering power on all scales due to the very efficient operation of the Vainshtein mechanism. Such a strong effect is typically not seen in other...

  20. A family of quasi-cubic blended splines and applications

    Institute of Scientific and Technical Information of China (English)

    SU Ben-yue; TAN Jie-qing

    2006-01-01

    A class of quasi-cubic B-spline base functions by trigonometric polynomials are established which inherit properties similar to those of cubic B-spline bases. The corresponding curves with a shape parameter α, defined by the introduced base functions, include the B-spline curves and can approximate the B-spline curves from both sides. The curves can be adjusted easily by using the shape parameter α, where dpi(α,t) is linear with respect to dα for the fixed t. With the shape parameter chosen properly,the defined curves can be used to precisely represent straight line segments, parabola segments, circular arcs and some transcendental curves, and the corresponding tensor product surfaces can also represent spherical surfaces, cylindrical surfaces and some transcendental surfaces exactly. By abandoning positive property, this paper proposes a new C2 continuous blended interpolation spline based on piecewise trigonometric polynomials associated with a sequence of local parameters. Illustration showed that the curves and surfaces constructed by the blended spline can be adjusted easily and freely. The blended interpolation spline curves can be shape-preserving with proper local parameters since these local parameters can be considered to be the magnification ratio to the length of tangent vectors at the interpolating points. The idea is extended to produce blended spline surfaces.

  1. Partially Blended Constrained Rational Cubic Trigonometric Fractal Interpolation Surfaces

    Science.gov (United States)

    Chand, A. K. B.; Tyada, K. R.

    2016-08-01

    Fractal interpolation is an advance technique for visualization of scientific shaped data. In this paper, we present a new family of partially blended rational cubic trigonometric fractal interpolation surfaces (RCTFISs) with a combination of blending functions and univariate rational trigonometric fractal interpolation functions (FIFs) along the grid lines of the interpolation domain. The developed FIFs use rational trigonometric functions pi,j(θ) qi,j(θ), where pi,j(θ) and qi,j(θ) are cubic trigonometric polynomials with four shape parameters. The convergence analysis of partially blended RCTFIS with the original surface data generating function is discussed. We derive sufficient data-dependent conditions on the scaling factors and shape parameters such that the fractal grid line functions lie above the grid lines of a plane Π, and consequently the proposed partially blended RCTFIS lies above the plane Π. Positivity preserving partially blended RCTFIS is a special case of the constrained partially blended RCTFIS. Numerical examples are provided to support the proposed theoretical results.

  2. Observation of Body-Centered Cubic Gold Nanocluster.

    Science.gov (United States)

    Liu, Chao; Li, Tao; Li, Gao; Nobusada, Katsuyuki; Zeng, Chenjie; Pang, Guangsheng; Rosi, Nathaniel L; Jin, Rongchao

    2015-08-17

    The structure of nanoparticles plays a critical role in dictating their material properties. Gold is well known to adopt face-centered cubic (fcc) structure. Herein we report the first observation of a body-centered cubic (bcc) gold nanocluster composed of 38 gold atoms protected by 20 adamantanethiolate ligands and two sulfido atoms ([Au38S2(SR)20], where R=C10H15) as revealed by single-crystal X-ray crystallography. This bcc structure is in striking contrast with the fcc structure of bulk gold and conventional Au nanoparticles, as well as the bi-icosahedral structure of [Au38(SCH2CH2Ph)24]. The bcc nanocluster has a distinct HOMO-LUMO gap of ca. 1.5 eV, much larger than the gap (0.9 eV) of the bi-icosahedral [Au38(SCH2CH2Ph)24]. The unique structure of the bcc gold nanocluster may be promising in catalytic applications.

  3. Four-dimensional black holes in Einsteinian cubic gravity

    Science.gov (United States)

    Bueno, Pablo; Cano, Pablo A.

    2016-12-01

    We construct static and spherically symmetric generalizations of the Schwarzschild- and Reissner-Nordström-(anti-)de Sitter [RN-(A)dS] black-hole solutions in four-dimensional Einsteinian cubic gravity (ECG). The solutions are characterized by a single function which satisfies a nonlinear second-order differential equation. Interestingly, we are able to compute independently the Hawking temperature T , the Wald entropy S and the Abbott-Deser mass M of the solutions analytically as functions of the horizon radius and the ECG coupling constant λ . Using these we show that the first law of black-hole mechanics is exactly satisfied. Some of the solutions have positive specific heat, which makes them thermodynamically stable, even in the uncharged and asymptotically flat case. Further, we claim that, up to cubic order in curvature, ECG is the most general four-dimensional theory of gravity which allows for nontrivial generalizations of Schwarzschild- and RN-(A)dS characterized by a single function which reduce to the usual Einstein gravity solutions when the corresponding higher-order couplings are set to zero.

  4. Novel Cubic Magnetite Nanoparticle Synthesis Using Room Temperature Ionic Liquid

    Directory of Open Access Journals (Sweden)

    M. Sundrarajan

    2012-01-01

    Full Text Available Room Temperature Ionic liquids are relatively more useful in the synthesis of inorganic nanostructured materials because of their unique properties. To synthesize the iron oxide nanoparticle in simple precipitation method, a novel ionic liquid was used as the greener medium and stabilizing agent namely “1-n-butyl-3-methylimidazolium trifluoromethane sulfonate [BMIM][TfO]”. The crystallinity, chemical structure, morphology and magnetic properties of the synthesized magnetite nanoparticles have been characterized by using X-ray diffraction (XRD, Fourier Transform Infrared (FT-IR, Scanning electron microscopy (SEM, Atomic force microscopy(AFM, Transmission electron microscopy (TEM and Vibrating sample magnetometer (VSM studies. The XRD study is divulge that the synthesized magnetite nanoparticles have inverse spinel face centered cubic structure. The FT-IR vibration peaks show the formation of Fe3O4 nanoparticles, where the vibration peak for Fe-O is deliberately presence at 584 cm-1. The average particle size of the synthesized nanoparticles is found to be 35 nm. Homogeneously dispersed cubic shape with superstructure is found through SEM, AFM and TEM examination studies. The synthesized iron oxide nanoparticles have a high saturation magnetization value of 25 emu/g, which is very much useful for biomedical applications.

  5. Thermal conductivity analysis of SiC ceramics and fully ceramic microencapsulated fuel composites

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Hyeon-Geun, E-mail: hglee@kaeri.re.kr [Korea Atomic Energy Research Institute, 989-111 Daedeok-daero, Yuseong-gu, Daejeon (Korea, Republic of); Kim, Daejong [Korea Atomic Energy Research Institute, 989-111 Daedeok-daero, Yuseong-gu, Daejeon (Korea, Republic of); Lee, Seung Jae [KEPCO Nuclear Fuel, 242, Daedeok-daero, Yuseong-gu, Daejeon (Korea, Republic of); Park, Ji Yeon; Kim, Weon-Ju [Korea Atomic Energy Research Institute, 989-111 Daedeok-daero, Yuseong-gu, Daejeon (Korea, Republic of)

    2017-01-15

    Highlights: • Thermal conductivity of SiC ceramics and FCM pellets was measured and discussed. • Thermal conductivity of FCM pellets was analyzed by the Maxwell-Eucken equation. • Effective thermal conductivity of TRISO particles applied in this study was assumed. - Abstract: The thermal conductivity of SiC ceramics and FCM fuel composites, consisting of a SiC matrix and TRISO coated particles, was measured and analyzed. SiC ceramics and FCM pellets were fabricated by hot press sintering with Al{sub 2}O{sub 3} and Y{sub 2}O{sub 3} sintering additives. Several factors that influence thermal conductivity, specifically the content of sintering additives for SiC ceramics and the volume fraction of TRISO particles and the matrix thermal conductivity of FCM pellets, were investigated. The thermal conductivity values of samples were analyzed on the basis of their microstructure and the arrangement of TRISO particles. The thermal conductivity of the FCM pellets was compared to that predicted by the Maxwell-Eucken equation and the thermal conductivity of TRISO coated particles was calculated. The thermal conductivity of FCM pellets in various sintering conditions was in close agreement to that predicted by the Maxwell-Eucken equation with the fitted thermal conductivity value of TRISO particles.

  6. Surface characteristics and corrosion behaviour of WE43 magnesium alloy coated by SiC film

    Science.gov (United States)

    Li, M.; Cheng, Y.; Zheng, Y. F.; Zhang, X.; Xi, T. F.; Wei, S. C.

    2012-01-01

    Amorphous SiC film has been successfully fabricated on the surface of WE43 magnesium alloy by plasma enhanced chemical vapour deposition (PECVD) technique. The microstructure and elemental composition were analyzed by transmission electron microscopy (TEM), glancing angle X-ray diffraction (GAXRD) and X-ray photoelectron spectroscopy (XPS), respectively. The immersion test indicated that SiC film could efficiently slow down the degradation rate of WE43 alloy in simulated body fluid (SBF) at 37 ± 1 °C. The indirect toxicity experiment was conducted using L929 cell line and the results showed that the extraction medium of SiC coated WE43 alloys exhibited no inhibitory effect on L929 cell growth. The in vitro hemocompatibility of the samples was investigated by hemolysis test and blood platelets adhesion test, and it was found that the hemolysis rate of the coated WE43 alloy decreased greatly, and the platelets attached on the SiC film were slightly activated with a round shape. It could be concluded that SiC film prepared by PECVD made WE43 alloy more appropriate to biomedical application.

  7. Surface characteristics and corrosion behaviour of WE43 magnesium alloy coated by SiC film

    Energy Technology Data Exchange (ETDEWEB)

    Li, M. [Center for Biomedical Materials and Tissue Engineering, Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871 (China); Cheng, Y., E-mail: chengyan@pku.edu.cn [Center for Biomedical Materials and Tissue Engineering, Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871 (China); Zheng, Y.F. [Center for Biomedical Materials and Tissue Engineering, Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871 (China); Department of Advanced Materials and Nanotechnology, College of Engineering, Peking University, Beijing 100871 (China); Zhang, X.; Xi, T.F. [Center for Biomedical Materials and Tissue Engineering, Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871 (China); Wei, S.C. [Center for Biomedical Materials and Tissue Engineering, Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871 (China); Department of Oral and Maxillofacial Surgery, School and Hospital of Stomatology, Peking University, Beijing 100871 (China)

    2012-01-15

    Amorphous SiC film has been successfully fabricated on the surface of WE43 magnesium alloy by plasma enhanced chemical vapour deposition (PECVD) technique. The microstructure and elemental composition were analyzed by transmission electron microscopy (TEM), glancing angle X-ray diffraction (GAXRD) and X-ray photoelectron spectroscopy (XPS), respectively. The immersion test indicated that SiC film could efficiently slow down the degradation rate of WE43 alloy in simulated body fluid (SBF) at 37 {+-} 1 Degree-Sign C. The indirect toxicity experiment was conducted using L929 cell line and the results showed that the extraction medium of SiC coated WE43 alloys exhibited no inhibitory effect on L929 cell growth. The in vitro hemocompatibility of the samples was investigated by hemolysis test and blood platelets adhesion test, and it was found that the hemolysis rate of the coated WE43 alloy decreased greatly, and the platelets attached on the SiC film were slightly activated with a round shape. It could be concluded that SiC film prepared by PECVD made WE43 alloy more appropriate to biomedical application.

  8. In-Situ Observation of SiC Bulk Single Crystal Growth by XRD System

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    In-situ analysis for SiC bulk single crystal growth was reported using vertical X-ray diffractometer system. A furnace for SiC sublimation growth combined with the XRD system which possessed three kinds of functions including topography, rocking curve measurement and crystal growth rate monitoring was developed. These functions could contribute as a powerful tool finding the optimum growth condition by dynamic observation in the crucible. In this study, the in-situ X-ray topographs succeeded to capture dynamic elongation of defects and dislocation generated in the SiC growing crystals. The in-situ rocking curve measurement reviled appearance of mosaic structure in the SiC crystal grown with high growth rate. The in-situ growth rate monitoring also succeeded very precisely using the direct X-ray beam absorption. On the base of findings and facts obtained by the in-situ observations, the importance for the SiC growth was discussed.

  9. Investigation on The Properties of Fe-Si3N4 Bonded SiC Composite

    Institute of Scientific and Technical Information of China (English)

    ZHANG Yong; FENG Di; PENG Dayan

    2005-01-01

    The mechanical properties of pressureless sintering Fe-Si3N4 bonded SiC and Si3 N4 bonded SiC with same manufacture process have been compared in this paper.The oxidizing mechanism of Fe-Si3 N4 bonded SiC ceramic matrix composite has been investigated especially through TG-DSC (thermo gravimetric analysis-differential scanning calorimeter) experiment. During oxidation procedure the main reaction is the oxidation of SiC and Si3N4, SiO2 which form protecting film to prevent further oxidizing. And residual iron in the samples become Fe2 O3 and Fe3O4, the oxidation kinetics at 1100 ~ 1300℃ of re-Si3 N4 bonded SiC has been studied especially. The weight gain per unit area at initial stage changes according to beeline rule, in the middle according to conic, and in the last oxidation period follows parabola rule.

  10. Highly flexible and robust N-doped SiC nanoneedle field emitters

    KAUST Repository

    Chen, Shanliang

    2015-01-23

    Flexible field emission (FE) emitters, whose unique advantages are lightweight and conformable, promise to enable a wide range of technologies, such as roll-up flexible FE displays, e-papers and flexible light-emitting diodes. In this work, we demonstrate for the first time highly flexible SiC field emitters with low turn-on fields and excellent emission stabilities. n-Type SiC nanoneedles with ultra-sharp tips and tailored N-doping levels were synthesized via a catalyst-assisted pyrolysis process on carbon fabrics by controlling the gas mixture and cooling rate. The turn-on field, threshold field and current emission fluctuation of SiC nanoneedle emitters with an N-doping level of 7.58 at.% are 1.11 V μm-1, 1.55 V μm-1 and 8.1%, respectively, suggesting the best overall performance for such flexible field emitters. Furthermore, characterization of the FE properties under repeated bending cycles and different bending states reveal that the SiC field emitters are mechanically and electrically robust with unprecedentedly high flexibility and stabilities. These findings underscore the importance of concurrent morphology and composition controls in nanomaterial synthesis and establish SiC nanoneedles as the most promising candidate for flexible FE applications. © 2015 Nature Publishing Group All rights reserved.

  11. X-ray fluorescence microtomography on a SiC nuclear fuel shell

    Energy Technology Data Exchange (ETDEWEB)

    Naghedolfeizi, M.; Chung, J.S.; Ice, G.E. [Oak Ridge National Lab., TN (United States). Metals and Ceramics Div.; Yun, W.B.; Cai, Z.; Lai, B. [Argonne National Lab., IL (United States). Advanced Photon Source

    1998-12-31

    TRISO fuel particles contain a small kernel of nuclear fuel encapsulated by alternating layers of C and a barrier layer of SiC. The TRISO fuel particle is used in an advanced nuclear fuel where the SiC shell provides the primary barrier for radioactive elements in the kernel. The performance of this barrier is key to containment. The authors have used x-ray fluorescence microtomography to measure the trace element distribution in a SiC shell. Prior to the measurements the nuclear fuel and C layers were leached from the particle. The shell was then encapsulated by kapton tape to simplify handling. The shell was mounted on a glass fiber and measurements were made with an {approximately} 1 x 3 {micro}m{sup 2} x-ray probe on beamline 2-ID at the APS. The distribution of trace elements in the SiC shell was reconstructed after correcting the data for artifacts arising from absorption and scattering off the kapton tape. The observed trace elements are distributed in small < 1 {micro}m regions through the SiC shell. The trace elements can be attributed to radiation enhanced diffusion of elements in the kernel or to trace elements introduced during fabrication. X-ray fluorescence microtomography is an ideal tool for this work because it is a penetrating nondestructive probe sensitive to trace elements in a low Z matrix and because it provides a picture of the elemental distribution in the shell.

  12. Ag Transport Through Non-Irradiated and Irradiated SiC

    Energy Technology Data Exchange (ETDEWEB)

    Szlufarska, Izabela [Univ. of Wisconsin, Madison, WI (United States); Morgan, Dane [Univ. of Wisconsin, Madison, WI (United States); Blanchard, James [Univ. of Wisconsin, Madison, WI (United States)

    2016-01-11

    Silicon carbide is the main barrier to diffusion of fission products in the current design of TRistuctural ISOtropic (TRISO) coated fuel particles, and Ag is one of the few fission products that have been shown to escape through this barrier. Because the SiC coating in TRISO is exposed to radiation throughout the lifetime of the fuel, understanding of how radiation changes the transport of the fission products is essential for the safety of the reactor. The goals of this project are: (i) to determine whether observed variation in integral release measurements of Ag through SiC can be explained by differences in grain size and grain boundary (GB) types among the samples; (2) to identify the effects of irradiation on diffusion of Ag through SiC; (3) to discover phenomena responsible for significant solubility of Ag in polycrystalline SiC. To address these goals, we combined experimental analysis of SiC diffusion couples with modeling studies of diffusion mechanisms through bulk and GBs of this material. Comparison between results obtained for pristine and irradiated samples brings in insights into the effects of radiation on Ag transport.

  13. Molecular systems biology of Sic1 in yeast cell cycle regulation through multiscale modeling.

    Science.gov (United States)

    Barberis, Matteo

    2012-01-01

    Cell cycle control is highly regulated to guarantee the precise timing of events essential for cell growth, i.e., DNA replication onset and cell division. Failure of this control plays a role in cancer and molecules called cyclin-dependent kinase (Cdk) inhibitors (Ckis) exploit a critical function in cell cycle timing. Here we present a multiscale modeling where experimental and computational studies have been employed to investigate structure, function and temporal dynamics of the Cki Sic1 that regulates cell cycle progression in Saccharomyces cerevisiae. Structural analyses reveal molecular details of the interaction between Sic1 and Cdk/cyclin complexes, and biochemical investigation reveals Sic1 function in analogy to its human counterpart p27(Kip1), whose deregulation leads to failure in timing of kinase activation and, therefore, to cancer. Following these findings, a bottom-up systems biology approach has been developed to characterize modular networks addressing Sic1 regulatory function. Through complementary experimentation and modeling, we suggest a mechanism that underlies Sic1 function in controlling temporal waves of cyclins to ensure correct timing of the phase-specific Cdk activities.

  14. Creep deformation of grain boundary in a highly crystalline SiC fibre.

    Science.gov (United States)

    Shibayama, Tamaki; Yoshida, Yutaka; Yano, Yasuhide; Takahashi, Heishichiro

    2003-01-01

    Silicon carbide (SiC) matrix composites reinforced by SiC fibres (SiC/SiC composites) are currently being considered as alternative materials in high Ni alloys for high-temperature applications, such as aerospace components, gas-turbine energy-conversion systems and nuclear fusion reactors, because of their high specific strength and fracture toughness at elevated temperatures compared with monolithic SiC ceramics. It is important to evaluate the creep properties of SiC fibres under tensile loading in order to determine their usefulness as structural components. However, it would be hard to evaluate creep properties by monoaxial tensile properties when we have little knowledge on the microstructure of crept specimens, especially at the grain boundary. Recently, a simple fibre bend stress relaxation (BSR) test was introduced by Morscher and DiCarlo to address this problem. Interpretation of the fracture mechanism at the grain boundary is also essential to allow improvement of the mechanical properties. In this paper, effects of stress applied by BSR test on microstructural evolution in advanced SiC fibres, such as Tyranno-SA including small amounts of Al, are described and discussed along with the results of microstructure analysis on an atomic scale by using advanced microscopy.

  15. Analysis of charge loss in nonvolatile memory with multi-layered SiC nanocrystals

    Science.gov (United States)

    Lee, Dong Uk; Lee, Tae Hee; Kim, Eun Kyu; Shin, Jin-Wook; Cho, Won-Ju

    2009-08-01

    A nonvolatile memory device with multilayered SiC nanocrystals for long-term data storage was fabricated, and its electrical properties were analyzed. The average size and density of the SiC nanocrystals, which were formed between the tunnel and control oxide layers, were approximately 5 nm and 2×1012 cm-2, respectively. The memory window of nonvolatile memory with the multilayer of SiC nanocrystals was about 2.5 V after program and erase voltages of ±12 V were applied for 500 ms, and then it was maintained at about 1.1 V for 105 s at 75 °C. The activation energy estimated from charge losses of 25% to 50% increased from 0.03 to 0.30 eV, respectively. The charge loss could be caused by a Pool-Frenkel current of holes and electrons between the SiC quantum dots and the carrier charge traps around the SiC nanocrystals embedded in SiO2 or the degradation effect of the tunnel oxide by stress induced leakage current.

  16. Pulmonary retention of ceramic fibers in silicon carbide (SiC) workers.

    Science.gov (United States)

    Dufresne, A; Loosereewanich, P; Armstrong, B; Infante-Rivard, C; Perrault, G; Dion, C; Massé, S; Bégin, R

    1995-05-01

    The fibrous inorganic content of post-mortem lung material obtained from 15 men who worked in the primary silicon carbide (SiC) industry was evaluated. Five men had neither lung fibrosis nor lung cancer (NFNC), six had lung fibrosis (LF), and four had lung fibrosis and lung cancer (LFLC). The workers had 23 to 32 years of exposure. Mean duration of exposure was 23.4 (SD 6.9) years in the NFNC group, 28.8 (SD 5.5) in the LF, and 32.3 (SD 9.0) in the LFLC group. Concentrations of SiC ceramic fibers and other fibrous minerals and angular particles were determined by transmission electron microscopy and energy dispersive spectroscopy. The geometric mean and geometric standard deviation lung concentrations of SiC ceramic fibers 0.1). Pulmonary retention of SiC fibers > or = 5 microns showed an excess in LF and LFLC cases combined versus NFNC that approached statistical significance (Mann-Whitney, p = 0.06). There was a somewhat greater difference for lung retention of ferruginous bodies between NFNC and either LF or LFLC cases (Mann-Whitney, p = 0.02). SiC fibers > or = 5 microns and angular particles containing Si and especially ferruginous bodies were found at higher concentrations in LF and LFLC than in NFNC cases.

  17. Epitaxy relationships between Ge-islands and SiC(0 0 0 1)

    Energy Technology Data Exchange (ETDEWEB)

    Ait-Mansour, K. [Faculte des Sciences, LPSE, UMR CNRS 7014, 4, rue des Freres Lumiere, 68093 Mulhouse, Cedex (France)]. E-mail: k.ait-mansour@uha.fr; Dentel, D. [Faculte des Sciences, LPSE, UMR CNRS 7014, 4, rue des Freres Lumiere, 68093 Mulhouse, Cedex (France); Kubler, L. [Faculte des Sciences, LPSE, UMR CNRS 7014, 4, rue des Freres Lumiere, 68093 Mulhouse, Cedex (France); Diani, M. [Departement de Physique, Faculte des Sciences et Techniques, LSGM, BP 416, Tanger, Maroc (Morocco); Bischoff, J.L. [Faculte des Sciences, LPSE, UMR CNRS 7014, 4, rue des Freres Lumiere, 68093 Mulhouse, Cedex (France); Bolmont, D. [Faculte des Sciences, LPSE, UMR CNRS 7014, 4, rue des Freres Lumiere, 68093 Mulhouse, Cedex (France)

    2005-03-15

    Reflection high-energy electron diffraction (RHEED) has been used to determine epitaxy relationships and in-plane orientations between Ge and SiC(0 0 0 1). Three monolayers of Ge have been deposited at 500 deg. C on a graphitized SiC (6{radical}3 x 6{radical}3)R30 deg. reconstructed surface, this surface supporting epitaxial Ge island growth in a Volmer-Weber mode. Nucleation of relaxed Ge-islands gives rise to transmission electron diffraction patterns allowing to deduce that pure Ge grows according to only one epitaxy relationship Ge{l_brace}1 1 1{r_brace}//SiC(0 0 0 1). These {l_brace}1 1 1{r_brace}-Ge-islands have two in-plane orientations, a preferential one, Ge<-1-12>//SiC<1-100> and a minority one, Ge<-1-12>//SiC<10-10>, deduced one from the other by a 30 deg. rotation around the <1 1 1>-Ge (or [0 0 0 1]-SiC) growth axis. Due to the three-fold symmetry of the {l_brace}1 1 1{r_brace}-Ge plane, each in-plane orientation is degenerated into two twin orientations, differing by a 180 deg. angle around Ge<111>.

  18. Pore Formation Process of Porous Ti3SiC2 Fabricated by Reactive Sintering

    Directory of Open Access Journals (Sweden)

    Huibin Zhang

    2017-02-01

    Full Text Available Porous Ti3SiC2 was fabricated with high purity, 99.4 vol %, through reactive sintering of titanium hydride (TiH2, silicon (Si and graphite (C elemental powders. The reaction procedures and the pore structure evolution during the sintering process were systematically studied by X-ray diffraction (XRD and scanning electron microscope (SEM. Our results show that the formation of Ti3SiC2 from TiH2/Si/C powders experienced the following steps: firstly, TiH2 decomposed into Ti; secondly, TiC and Ti5Si3 intermediate phases were generated; finally, Ti3SiC2 was produced through the reaction of TiC, Ti5Si3 and Si. The pores formed in the synthesis procedure of porous Ti3SiC2 ceramics are derived from the following aspects: interstitial pores left during the pressing procedure; pores formed because of the TiH2 decomposition; pores formed through the reactions between Ti and Si and Ti and C powders; and the pores produced accompanying the final phase synthesized during the high temperature sintering process.

  19. Key parameters governing the densification of cubic-Li7La3Zr2O12 Li+ conductors

    Science.gov (United States)

    Yi, Eongyu; Wang, Weimin; Kieffer, John; Laine, Richard M.

    2017-06-01

    Cubic-Li7La3Zr2O12 (LLZO) is regarded as one of the most promising solid electrolytes for the construction of inherently safe, next generation all-solid-state Li batteries. Unfortunately, sintering these materials to full density with controlled grain sizes, mechanical and electrochemical properties relies on energy and equipment intensive processes. In this work, we elucidate key parameters dictating LLZO densification by tracing the compositional and structural changes during processing calcined and ball-milled Al3+ doped LLZO powders. We find that the powders undergo ion (Li+/H+) exchange during room temperature processing, such that on heating, the protonated LLZO lattice collapses and crystallizes to its constituent oxides, leading to reaction driven densification at sizes and protonation cannot be decoupled, and actually aid densification. We conclude that using fully decomposed nanoparticle mixtures, as obtained by liquid-feed flame spray pyrolysis, provides an ideal approach to use high surface and reaction energy to drive densification, resulting in pressureless sintering of Ga3+ doped LLZO thin films (25 μm) at 1130 °C/0.3 h to ideal microstructures (95 ± 1% density, 1.2 ± 0.2 μm average grain size) normally accessible only by pressure-assisted sintering. Such films offer both high ionic conductivity (1.3 ± 0.1 mS cm-1) and record low ionic area specific resistance (2 Ω cm2).

  20. Low Shear Strength and Shear-Induced Failure in Ti3SiC2

    Institute of Scientific and Technical Information of China (English)

    2003-01-01

    Shear strength and shear-induced Hertzian contact damage in Ti3SiC2 were investigated using double-notched-beamspecimen and steel spherical indenter, respectively. The shear strength of 40 MPa that was only about 10% of bendingstrength was obtained for this novel ceramic. The SEM fractograph of specimens failed in shear test indicated acombination of intergranular and transgranular fracture. Under a contact load, plastic indent without cone crackcould be formed on the surface of Ti3SiC2 sample. Optical observation on side view showed half-circle cracks aroundthe damage zone below the indent, and the crack shape was consistent with the contrail of the principal shearingstress. The low shear strength and the shearing-activated intergranular sliding were confirmed being the key factorsfor failure in Ti3SiC2.

  1. Development of a PSpice Modeling Platform for SiC Power MOSFET Modules

    DEFF Research Database (Denmark)

    Ceccarelli, Lorenzo; Iannuzzo, Francesco; Nawaz, Muhammad

    2017-01-01

    The aim of this work is to present a PSpice implementation for a well-established and compact physics-based SiC MOSFET model, including a fast, experimental-based parameter extraction procedure in a MATLAB GUI environment. The model, originally meant for single-die devices, has been used to simul......The aim of this work is to present a PSpice implementation for a well-established and compact physics-based SiC MOSFET model, including a fast, experimental-based parameter extraction procedure in a MATLAB GUI environment. The model, originally meant for single-die devices, has been used...... to simulate the performance of high current rating (above 100 A), multi-chip SiC MOSFET modules, both for static and switching behavior. Therefore, the simulation results have been validated experimentally in a wide range of operating conditions, including high temperatures, gate resistance and stray elements...

  2. Microporous layer based on SiC for high temperature proton exchange membrane fuel cells

    Science.gov (United States)

    Lobato, Justo; Zamora, Héctor; Cañizares, Pablo; Plaza, Jorge; Rodrigo, Manuel Andrés

    2015-08-01

    This work reports the evaluation of Silicon Carbide (SiC) for its application in microporous layers (MPL) of HT-PEMFC electrodes and compares results with those obtained using conventional MPL based on Vulcan XC72. Influence of the support load on the MPL prepared with SiC was evaluated, and the MPL were characterized by XRD, Hg porosimetry and cyclic voltammetries. In addition, a short lifetest was carried out to evaluate performance in accelerated stress conditions. Results demonstrate that SiC is a promising alternative to carbonaceous materials because of its higher electrochemical and thermal stability and the positive effect on mass transfer associated to its different pore size distribution. Ohmic resistance is the most significant challenge to be overcome in further studies.

  3. Fluorescent SiC with pseudo-periodic moth-eye structures

    DEFF Research Database (Denmark)

    Ou, Yiyu; Aijaz, Imran; Ou, Haiyan

    2012-01-01

    material much superior to the phosphors in terms of high color rendering index value and long lifetime. The light extraction efficiency of the fluorescent SiC based all semiconductor LED light sources is usually low due to the large refractive index difference between the semiconductor and air. In order...... to enhance the extraction efficiency, we present a simple method to fabricate the pseudo-periodic moth-eye structures on the surface of the fluorescent SiC. A thin gold layer is deposited on the fluorescent SiC first. Then the thin gold layer is treated by rapid thermal processing. After annealing, the thin...... gold layer turns into discontinuous nano-islands. The average size of the islands is dependent on the annealing condition which could be well controlled. By using the reactive-ion etching, pseudo-periodic moth-eye structures would be obtained using the gold nano-islands as a mask layer. Reactive...

  4. The diffusion welding of 7075Al-3%SiC particles reinforced composites

    Science.gov (United States)

    Aydin, M.; Gürler, R.; Türker, M.

    2009-02-01

    A group of 3% SiC particle reinforced Al-7075 alloys was diffusion joined at 560°C between 1 h and 2 h durations under 2 MPa applied pressure in a vacuum of 2 × 10-3 Pa. Optical microscopy and SEM-EDS studies were used to characterise the weldment and the fracture surfaces of all samples investigated. A non-planar interface formation was observed at the bond interface. The maximum shear strength of 137 MPa was obtained with the composite 7075-3% SiC joined for two hours, which is 92% of the shear strength of the parent material. The fracture surface of the 7075-3% SiC composites displayed a non-planar fracture surfaces with some plastic deformation.

  5. Surface Oxidation of Al2O3/SiC Nanocomposite: Phase Transformation and Microstructure

    Institute of Scientific and Technical Information of China (English)

    Cai Shu; Peng Zhenzhen; Feng Jie; Lu Feng

    2005-01-01

    The surface oxidation behavior of pressureless sintered Al2O3/SiC nanocomposite was studied from 1000 to 1400 ℃ for more than 10 h in air. Weight gain during the process of heat treatment was measured by TG analysis. Phase transformation and microstructure changes of these specimens due to oxidation were investigated with X-ray diffraction (XRD), SEM and EDX technology. Thermogravimetric analysis show that the weight gain as a result of oxidation of SiC become significant above 1200 ℃. In the range of 1000~1300 ℃, the SiC grits are usually coated with a layer of amorphous silica after oxidation. Above 1300 ℃, the amorphous silica reacted with alumina matrix and formed mullite or crystallized into cristobalite. The rate of oxidation depends on the formation of dense cristobalite film. Large amount of needle-like mullite and alumina crystals are formed on the surface after oxidation at 1400 ℃.

  6. Al4SiC4 wurtzite crystal: Structural, optoelectronic, elastic, and piezoelectric properties

    Directory of Open Access Journals (Sweden)

    L. Pedesseau

    2015-12-01

    Full Text Available New experimental results supported by theoretical analyses are proposed for aluminum silicon carbide (Al4SiC4. A state of the art implementation of the density functional theory is used to analyze the experimental crystal structure, the Born charges, the elastic properties, and the piezoelectric properties. The Born charge tensor is correlated to the local bonding environment for each atom. The electronic band structure is computed including self-consistent many-body corrections. Al4SiC4 material properties are compared to other wide band gap wurtzite materials. From a comparison between an ellipsometry study of the optical properties and theoretical results, we conclude that the Al4SiC4 material has indirect and direct band gap energies of about 2.5 eV and 3.2 eV, respectively.

  7. Investigation of reactivity between SiC and Nb-1Zr in planned irradiation creep experiments

    Energy Technology Data Exchange (ETDEWEB)

    Lewinsohn, C.A.; Hamilton, M.L.; Jones, R.H.

    1997-08-01

    Thermodynamic calculations and diffusion couple experiments showed that SiC and Nb-1Zr were reactive at the upper range of temperatures anticipated in the planned irradiation creep experiment. Sputter-deposited aluminum oxide (Al{sub 2}O{sub 3}) was selected as a diffusion barrier coating. Experiments showed that although the coating coarsened at high temperature it was an effective barrier for diffusion of silicon from SiC into Nb-1Zr. Therefore, to avoid detrimental reactions between the SiC composite and the Nb-1Zr pressurized bladder during the planned irradiation creep experiment, a coating of Al{sub 2}O{sub 3} will be required on the Nb-1Zr bladder.

  8. Pseudo Dirac dispersion in Mn-intercalated graphene on SiC

    KAUST Repository

    Kahaly, M. Upadhyay

    2013-07-01

    The atomic and electronic structures of bulk C6Mn, bulk C 8Mn, and Mn-intercalated graphene on SiC(0 0 0 1) and SiC(0001̄) are investigated by density functional theory. We find for both configurations of Mn-intercalated graphene a nonmagnetic state, in agreement with the experimental situation for SiC(0 0 0 1), and explain this property. The electronic structures around the Fermi energy are dominated by Dirac-like cones at energies consistent with data from angular resolved photoelectron spectroscopy [Gao et al., ACS Nano. 6 (2012) 6562]. However, our results demonstrate that the corresponding states trace back to hybridized Mn d orbitals, and not to the graphene. © 2013 Elsevier B.V. All rights reserved.

  9. Layered SiC sheets: a potential catalyst for oxygen reduction reaction.

    Science.gov (United States)

    Zhang, P; Xiao, B B; Hou, X L; Zhu, Y F; Jiang, Q

    2014-01-22

    The large-scale practical application of fuel cells cannot come true if the high-priced Pt-based electrocatalysts for oxygen reduction reaction (ORR) cannot be replaced by other efficient, low-cost, and stable electrodes. Here, based on density functional theory (DFT), we exploited the potentials of layered SiC sheets as a novel catalyst for ORR. From our DFT results, it can be predicted that layered SiC sheets exhibit excellent ORR catalytic activity without CO poisoning, while the CO poisoning is the major drawback in conventional Pt-based catalysts. Furthermore, the layered SiC sheets in alkaline media has better catalytic activity than Pt(111) surface and have potential as a metal-free catalyst for ORR in fuel cells.

  10. A Fast Electro-Thermal Co-Simulation Modeling Approach for SiC Power MOSFETs

    DEFF Research Database (Denmark)

    Ceccarelli, Lorenzo; Bahman, Amir Sajjad; Iannuzzo, Francesco

    The purpose of this work is to propose a novel electro-thermal co-simulation approach for the new generation of SiC MOSFETs, by development of a PSpice-based compact and physical SiC MOSFET model including temperature dependency of several parameters and a Simulink-based thermal network. The PSpice...... electrical model is capable to estimate the switching behavior and the energy losses of the device accurately under a wide range of operational conditions, including high temperature operations, within a relatively fast simulation time (few seconds). The the thermal network elements are extracted from...... the FEM simulation of the DUT’s structure, performed in ANSYS Icepack. A MATLAB script is used to process the simulation data and feed the needed settings and parameters back into the simulation. The parameters for a CREE 1.2 kV/30 A SiC MOSFET have been identified and the electro-thermal model has been...

  11. Cl-intercalated graphene on SiC: Influence of van der Waals forces

    KAUST Repository

    Cheng, Yingchun

    2013-01-01

    The atomic and electronic structures of Cl-intercalated epitaxial graphene on SiC are studied by first-principles calculations. By increasing the Cl concentration, doping levels from n-type to slightly p-type are achieved on the SiC(0001) surface, while a wider range of doping levels is possible on the SiC(0001̄) surface. We find that the Cl atoms prefer bonding to the substrate rather than to the graphene. By varying the Cl concentration the doping level can be tailored. Consideration of van der Waals forces improves the distance between the graphene and the substrate as well as the binding energy, but it is not essential for the formation energy. For understanding the doping mechanism the introduction of non-local van der Waals contributions to the exchange correlation functional is shown to be essential. Copyright © EPLA, 2013.

  12. Origin of the high p-doping in F intercalated graphene on SiC

    KAUST Repository

    Cheng, Yingchun

    2011-08-04

    The atomic and electronic structures of F intercalated epitaxialgraphene on a SiC(0001) substrate are studied by first-principles calculations. A three-step fluorination process is proposed. First, F atoms are intercalated between the graphene and the SiC, which restores the Dirac point in the band structure. Second, saturation of the topmost Si dangling bonds introduces p-doping up to 0.37 eV. Third, F atoms bond covalently to the graphene to enhance the p-doping. Our model explains the highly p-doped state of graphene on SiC after fluorination [A. L. Walter et al., Appl. Phys. Lett. 98, 184102 (2011)].

  13. Layered SiC Sheets: A Potential Catalyst for Oxygen Reduction Reaction

    Science.gov (United States)

    Zhang, P.; Xiao, B. B.; Hou, X. L.; Zhu, Y. F.; Jiang, Q.

    2014-01-01

    The large-scale practical application of fuel cells cannot come true if the high-priced Pt-based electrocatalysts for oxygen reduction reaction (ORR) cannot be replaced by other efficient, low-cost, and stable electrodes. Here, based on density functional theory (DFT), we exploited the potentials of layered SiC sheets as a novel catalyst for ORR. From our DFT results, it can be predicted that layered SiC sheets exhibit excellent ORR catalytic activity without CO poisoning, while the CO poisoning is the major drawback in conventional Pt-based catalysts. Furthermore, the layered SiC sheets in alkaline media has better catalytic activity than Pt(111) surface and have potential as a metal-free catalyst for ORR in fuel cells.

  14. Friction stir spot welding of 2024-T3 aluminum alloy with SiC nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Paidar, Moslem; Sarab, Mahsa Laali [Islamic Azad University, Tehran (Iran, Islamic Republic of)

    2016-01-15

    In this study, the Friction stir spot welding (FSSW) of 2024-T3 aluminum alloy with 1.6 mm thickness was investigated. The effects of the silicon carbide (SiC) nanoparticles on the metallurgical and mechanical properties were discussed. The effects of particles on tension shear and wear tests were also investigated. The process was conducted at a constant rotational speed of 1000 rpm. Results showed that adding SiC nanoparticles to the weld during FSSW had a major effect on the mechanical properties. In fact, the addition of nanoparticles as barriers prevented grain growth in the Stir zone (SZ). The data obtained in the tensile-shear and wear tests showed that tensile-shear load and wear resistance increased with the addition of SiC nanoparticles, which was attributed to the fine grain size produced in the SZ.

  15. Scalable nanostructuring on polymer by a SiC stamp: optical and wetting effects

    DEFF Research Database (Denmark)

    Argyraki, Aikaterini; Lu, Weifang; Petersen, Paul Michael;

    2015-01-01

    surface. The reflectance of SiC can be reduced down to 0.5% when the ~600nm nanostructures are applied on the surface (bare surface reflectance 25%). The texture of the green SiC color is changed when the different nanostructures are apparent. The ~600nm SiC nanostructures are replicated on polymer...... from 68 (bare) to 123 (nanostructured) degrees. The optical effect on the polymer surface can be maximized by applying a thin aluminum (Al) layer coating on the nanostructures (bare polymer reflectance 11%, nanostructured polymer reflectance 5%, Al coated nanostructured polymer reflectance 3......A method for fabricating scalable antireflective nanostructures on polymer surfaces (polycarbonate) is demonstrated. The transition from small scale fabrication of nanostructures to a scalable replication technique can be quite challenging. In this work, an area per print corresponding to a 2-inch...

  16. Heavy ion-induced damage in SiC Schottky barrier diode

    Energy Technology Data Exchange (ETDEWEB)

    Kamezawa, C. [Japan Aerospace Exploration Agency, Tsukuba Space Center, 2-1-1 Sengen, Ibaraki 305-8505 (Japan)]. E-mail: kamezawa.chihiro@jaxa.jp; Sindou, H. [Japan Aerospace Exploration Agency, Tsukuba Space Center, 2-1-1 Sengen, Ibaraki 305-8505 (Japan); Hirao, T. [Japan Atomic Energy Research Institute, Gunma 370-1292 (Japan); Ohyama, H. [Kumamoto National College of Technology, Kumamoto 861-1102 (Japan); Kuboyama, S. [Japan Aerospace Exploration Agency, Tsukuba Space Center, 2-1-1 Sengen, Ibaraki 305-8505 (Japan)

    2006-04-01

    Silicon carbide (SiC) is a very promising material for future electronic devices. Also it is an attractive material for space applications, that require long-term endurance and higher efficiency, where tolerance to space radiations is a major problem. In this study, we have performed some irradiation examinations and evaluations on a commercial SiC Schottky barrier diode by looking at the damage caused by ion incidence using heavy ions. Ions of Xe, Kr, Ar, Ne, and N, with specific energies, were used in the irradiation process. Sudden breakdown condition at higher bias voltage and gradual damage created by heavy ion incidence were confirmed. The collected charge spectra were also obtained and revealed mechanisms that resulted to permanent damage. The observed anomalous charge collection was an essential factor for the susceptibility. This indicates a problem that need to be solved in the future for SiC space application.

  17. Fabrication Of Al 2024/SiC Nanocomposite with Al and Cu Pure Coatings

    Directory of Open Access Journals (Sweden)

    P. Melali

    2015-06-01

    Full Text Available Composites find an important place as new advanced materials in last decades; those especially produced with nanoparticles reinforcements, attracts researchers and a number of researches were executed on this topic. In this study, Al-base 2024 alloy composites reinforced with SiC nanoparticles were fabricated and the effects of two different coating materials were investigated. Coatings were pure Al and Cu powder with constant grain particle size. The results show that the Al coating has impacts on grain size and the interface layer between reinforcement and matrix. The mechanism of formation of interface layer between SiC nanoparticles and the Al-base 2024 matrix with reinforced with Cu coated SiC particles is quite different.

  18. ToF-MEIS stopping measurements in thin SiC films

    Energy Technology Data Exchange (ETDEWEB)

    Linnarsson, M.K., E-mail: marga@kth.se [KTH Royal Institute of Technology, School of Information and Communication Technology, Integrated Circuits and Devices, P.O. Box E229, SE-16440 Kista-Stockhom (Sweden); Khartsev, S. [KTH Royal Institute of Technology, School of Information and Communication Technology, Integrated Circuits and Devices, P.O. Box E229, SE-16440 Kista-Stockhom (Sweden); Primetzhofer, D.; Possnert, G. [Uppsala University, Ångström Laboratory, Dept. of Physics and Astronomy, Ion Physics, P.O. Box 534, SE-751 21 Uppsala (Sweden); Hallén, A. [KTH Royal Institute of Technology, School of Information and Communication Technology, Integrated Circuits and Devices, P.O. Box E229, SE-16440 Kista-Stockhom (Sweden)

    2014-08-01

    Electronic stopping in thin, amorphous, SiC films has been studied by time-of-flight medium energy ion scattering and conventional Rutherford backscattering spectrometry. Amorphous SiC films (8, 21 and 36 nm) were prepared by laser ablation using a single crystalline silicon carbide target. Two kinds of substrate films, one with a lower atomic mass (carbon) and one with higher atomic mass (iridium) compared to silicon has been used. Monte Carlo simulations have been used to evaluate electronic stopping from the shift in energy for the signal scattered from Ir with and without SiC. The two kinds of samples are used to illustrate the strength and challenges for ToF-MEIS compared to conventional RBS.

  19. The Oxidation Rate of SiC in High Pressure Water Vapor Environments

    Science.gov (United States)

    Opila, Elizabeth J.; Robinson, R. Craig

    1999-01-01

    CVD SiC and sintered alpha-SiC samples were exposed at 1316 C in a high pressure burner rig at total pressures of 5.7, 15, and 25 atm for times up to 100h. Variations in sample emittance for the first nine hours of exposure were used to determine the thickness of the silica scale as a function of time. After accounting for volatility of silica in water vapor, the parabolic rate constants for Sic in water vapor pressures of 0.7, 1.8 and 3.1 atm were determined. The dependence of the parabolic rate constant on the water vapor pressure yielded a power law exponent of one. Silica growth on Sic is therefore limited by transport of molecular water vapor through the silica scale.

  20. Mechanism of Enhancement in Electromagnetic Properties of MgB2 by Nano SiC Doping

    NARCIS (Netherlands)

    Dou, S.X.; Shcherbakova, O.; Yeoh, W.K.; Kim, J.H.; Soltanian, S.; Wang, X.L.; Senatore, C.; Flukiger, R.; Dhallé, M.; Husnjak, O.; Babic, E.

    2007-01-01

    A comparative study of pure, SiC, and C doped MgB2 wires has revealed that the SiC doping allowed C substitution and MgB2 formation to take place simultaneously at low temperatures. C substitution enhances Hc2, while the defects, small grain size, and nanoinclusions induced by C incorporation and lo

  1. Efficiency and Cost Comparison of Si IGBT and SiC JFET Isolated DC/DC Converters

    DEFF Research Database (Denmark)

    Nielsen, Rasmus Ørndrup; Török, Lajos; Munk-Nielsen, Stig

    2013-01-01

    . An efficiency of above 97 % for the SiC JFET and over 90 % for the SI IGBT converter was measured. Cost differences between the two converters have been analyzed, showing that 772 days of operation are needed for the SiC converter costs to break even with the Si IGBT converter costs....

  2. Fluidity and microstructure formation during flow of Al- SiC particle composites

    Science.gov (United States)

    Yarandi, F. M.; Rohatgi, P. K.; Ray, S.

    1993-06-01

    This article presents the results of casting and spiral fluidity in a Al-7 wt% Si alloy reinforced with 10,15, and 20 vol% SiC particles in permanent molds. The fluidity of the Al-SiC slurry increases linearly with temperature up to about 760 °C. Above this temperature, the casting fluidity of the Al-SiC particle slurry does not change significantly with an increase in temperature. In several cases, the fluidity decreased at temperatures above 760 °C. The fluidity of Al-SiC melts containing 9-μm SiC particles decreased with an increase in volume percentage of SiC up to 15 vol% (the range studied), presumably due to an increase in the viscosity of the melt with increasing volume percentage of dispersoid and changes in thermophysical properties of the composite. However, the fluidity of Al-20 vol% SiC of 14-μm particle size is higher than the fluidity of Al-15 vol% SiC 9-μm particles, indicating the role of particle size and surface area in de-creasing fluidity. Composite slurries travel farther in a channel of larger cross sections compared to channels of smaller cross sections under similar conditions. Casting fluidity increases linearly with an in-crease in cross section of the channel. A model has been proposed to calculate the values of fluidity of the composite as a function of particle volume percent, superheat, flow velocity of the melt, and the cross sec-tion of the flow channel. Experimental observations have been compared with the predictions of the model, and some deviations have been attributed to settling and segregation of SiC particles observed through microstructural examination.

  3. Fabrication of SiC Reinforced Zr0{sub 2} Composites via Polymeric Precursor Route

    Energy Technology Data Exchange (ETDEWEB)

    Mistarihi, Qusai M.; Hong, Soon Hyung; Ryu, Ho Jin [KAIST, Daejeon (Korea, Republic of)

    2015-10-15

    This indicates that as a result of the decomposition of the SMP-730 at temperatures less than or equal to 1500 .deg. C, amorphous SiC was formed. This study suggests that a higher compaction pressure followed by an intermediate decomposition temperature of the polymeric precursor and a higher sintering temperature are needed in order to fabricate interconnected SiC-ZrO{sub 2} composites. A. Ortona et al. fabricated ZrB2-SiC composites with SiC phase surrounding the grains of ZrB2 matrix through a polymeric precursor route by using Si and phenol. S. Li et al. measured the thermal conductivity of Al composites reinforced with a continuous phase SiC and SiC particles and found that the difference in the thermal conductivity measured at room temperature was about 70.2 W/m.K. To the best of authors' knowledge, no study has been performed about the fabrication of the connected SiC microstructure to improve the thermophysical properties of oxides. Zirconium dioxide (ZrO{sub 2}) is one of the potential candidates for use as a matrix for inert matrix fuels (IMF) due to its low neutron absorption cross section, chemical stability, and the compatibility with water. Irradiation and chemical stability testes performed on yttria stabilized zirconia (YSZ) and calcium stabilized zirconia (CSZ) have shown that they have a good irradiation and chemical stability. Despite the good irradiation and chemical stability, its low thermal conductivity is considered the main disadvantage of YSZ. Core loading with the YSZ IMF pellets experienced about a 100 K higher center line temperature than the limit specified for UO{sub 2}.

  4. On-chip temperature monitoring of a SiC current limiter

    Energy Technology Data Exchange (ETDEWEB)

    Tournier, D.; Godignon, P.; Millan, J. [Centro Nacional de Microelectronica (CNM), Univ. Autonoma de Barcelona, Bellaterra (Spain); Planson, D.; Chante, J.P. [Centre de Genie Electrique de Lyon (CEGELY) INSA-LYON, UMR 5005 CNRS, Villeurbanne (France); Sarrus, F.; Palma, J.F. de [Ferraz Shawmut, Bonnet de Mure (France)

    2004-07-01

    High voltage and high current potentiality of SiC based devices has been proved, and various devices able to work at high temperature have been reported as well. Nevertheless, packaging is one of the main constrains for high temperature operation of these devices. Up to date, no specific power package has been reported for high temperature operation. Moreover, it is desirable to predict the SiC die temperature to avoid any related failure in order to improve the efficiency of the packaged SiC device. This paper deals with an integrated temperature sensor for SiC current limiting devices. The current limiter is based on a VJFET structure, which capability for dissipating high power density (140 kW/cm{sup 2}), in the limiting state, has been previously demonstrated. Carrier mobility dependence with temperature was extracted from cryogenic measurements. The temperature estimation is based on the measurement of the variation of the electrical resistance (caused by mobility variation) of the sensing device integrated with the current limiter. In this paper we first describe the temperature estimation methodology using various technological solution (from metallic resistor solution to the SiC integrated sensor). Then experimental temperature measurements using an integrated SiC sensor within a packaged current limiting devices will be presented. Electro-thermal measurements on the fabricated devices show that the current limiter is able to work at 205 C under steady state conditions (320 V), without degrading their electrical performances. Finally, perspectives in terms of integration and reliability will be proposed. (orig.)

  5. Proposal of a SiC disposal canister for very deep borehole disposal

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Heui-Joo; Lee, Minsoo; Lee, Jong-Youl; Kim, Kyungsu [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

    2016-10-15

    In this paper authors proposed a silicon carbide, SiC, disposal canister for the DBD concept in Korea. A. Kerber et al. first proposed the SiC canister for a geological disposal of HLW, CANDU or HTR spent nuclear fuels. SiC has some drawbacks in welding or manufacturing a large canister. Thus, we designed a double layered disposal canister consisting of a stainless steel outer layer and a SiC inner layer. KAERI has been interested in developing a very deep borehole disposal (DBD) of HLW generated from pyroprocessing of PWR spent nuclear fuel and supported the relevant R and D with very limited its own budget. KAERI team reviewed the DBD concept proposed by Sandia National Laboratories (SNL) and developed its own concept. The SNL concept was based on the steel disposal canister. The authors developed a new technology called cold spray coating method to manufacture a copper-cast iron disposal canister for a geological disposal of high level waste in Korea. With this method, 8 mm thin copper canister with 400 mm in diameter and 1200 mm in height was made. In general, they do not give any credit on the lifetime of a disposal canister in DBD concept unlike the geological disposal. In such case, the expensive copper canister should be replaced with another one. We designed a disposal canister using SiC for DBD. According to an experience in manufacturing a small size canister, the fabrication of a large-size one is a challenge. Also, welding of SiC canister is not easy. Several pathways are being paved to overcome it.

  6. Advantages and Limits of 4H-SIC Detectors for High- and Low-Flux Radiations

    Science.gov (United States)

    Sciuto, A.; Torrisi, L.; Cannavò, A.; Mazzillo, M.; Calcagno, L.

    2017-07-01

    Silicon carbide (SiC) detectors based on Schottky diodes were used to monitor low and high fluxes of photons and ions. An appropriate choice of the epilayer thickness and geometry of the surface Schottky contact allows the tailoring and optimizing the detector efficiency. SiC detectors with a continuous front electrode were employed to monitor alpha particles in a low-flux regime emitted by a radioactive source with high energy (>5.0 MeV) or generated in an ion implanter with sub-MeV energy. An energy resolution value of 0.5% was measured in the high energy range, while, at energy below 1.0 MeV, the resolution becomes 10%; these values are close to those measured with a traditional silicon detector. The same SiC devices were used in a high-flux regime to monitor high-energy ions, x-rays and electrons of the plasma generated by a high-intensity (1016 W/cm2) pulsed laser. Furthermore, SiC devices with an interdigit Schottky front electrode were proposed and studied to overcome the limits of the such SiC detectors in the detection of low-energy (˜1.0 keV) ions and photons of the plasmas generated by a low-intensity (1010 W/cm2) pulsed laser. SiC detectors are expected to be a powerful tool for the monitoring of radioactive sources and ion beams produced by accelerators, for a complete characterization of radiations emitted from laser-generated plasmas at high and low temperatures, and for dosimetry in a radioprotection field.

  7. Non-spherical micelles in an oil-in-water cubic phase

    DEFF Research Database (Denmark)

    Leaver, M.; Rajagopalan, V.; Ulf, O.

    2000-01-01

    The cubic phase formed between the microemulsion and hexagonal phases of the ternary pentaethylene glycol dodecyl ether (C12E5)-decane-water system and that doped with small amounts of sodium dodecylsulfate (SDS) have been investigated. The presence of discrete oil-swollen micelles in the cubic...... phase, both with and without SDS, was established by NMR self-diffusion. In addition H-2 NMR relaxation experiments have demonstrated that the micelles in the cubic phase are non-spherical, having grown and changed shape upon formation of the cubic phase from the micellar solution. Small angle...... scattering experiments indicate that the lattice parameter for the cubic phase is inconsistent with a simple packing of micelles. Whilst insufficient reflections were observed to establish the space group of the cubic phase uniquely, those that were are consistent with two commonly observed space groups...

  8. Surface finish effects and the strength-grain size relation in SiC

    Science.gov (United States)

    Cranmer, D. C.; Tressler, R. E.; Bradt, R. C.

    1977-01-01

    The effect of surface finish on the strength-grain size relation was investigated for dense hot-pressed SiC. Failure initiated predominantly via the propagation of extrinsic machining-induced flaws for the range of grain sizes and machining grit sizes studied. These results are consistent with the region of large-grain-size flaw control as delineated by Prochazka and Charles. The severity of machining-induced flaws, relative to the machining grit size, decreased with increasing machining grit size and decreasing SiC grain size.

  9. A Novel DBC Layout for Current Imbalance Mitigation in SiC MOSFET Multichip Power Modules

    DEFF Research Database (Denmark)

    Li, Helong; Munk-Nielsen, Stig; Beczkowski, Szymon

    2016-01-01

    This paper proposes a novel Direct Bonded Copper (DBC) layout for mitigating the current imbalance among the paralleled SiC MOSFET dies in multichip power modules. Compared to the traditional layout, the proposed DBC layout significantly reduces the circuit mismatch and current coupling effect......, which consequently improves the current sharing among the paralleled SiC MOSFET dies in power module. Mathematic analysis and circuit model of the DBC layout are presented to elaborate on the superior features of the proposed DBC layout. Simulation and experimental results further verify the theoretical...

  10. A Novel DBC Layout for Current Imbalance Mitigation in SiC MOSFET Multichip Power Modules

    DEFF Research Database (Denmark)

    Li, Helong; Munk-Nielsen, Stig; Beczkowski, Szymon

    2016-01-01

    This letter proposes a novel direct bonded copper (DBC) layout for mitigating the current imbalance among the paralleled SiC MOSFET dies in multichip power modules. Compared to the traditional layout, the proposed DBC layout significantly reduces the circuit mismatch and current coupling effect......, which consequently improves the current sharing among the paralleled SiC MOSFET dies in power module. Mathematic analysis and circuit model of the DBC layout are presented to elaborate the superior features of the proposed DBC layout. Simulation and experimental results further verify the theoretical...

  11. La théorie des industries culturelles (et informationnelles, composante des SIC

    Directory of Open Access Journals (Sweden)

    Bernard Miège

    2012-09-01

    Full Text Available Inaugurer le Cahier central de la Revue des SIC est certes une forme de reconnaissance, mais cela comporte des obligations, au premier rang desquelles la nécessité d’intéresser des lecteurs a priori pas immédiatement concernés par la thématique.Si la théorie des industries culturelles est devenue progressivement une approche marquante des SIC, en France, en Europe et plus largement encore (avec des dénominations variables et des modalités spécifiques, ce n’est en effet ni en le proclamant ha...

  12. Quasi-Freestanding multilayer graphene films on the carbon face of SiC

    Energy Technology Data Exchange (ETDEWEB)

    Siegel, D. A.; Hwang, C. G.; Fedorov, A. V.; Lanzara, A.

    2010-06-30

    The electronic band structure of as-grown and doped graphene grown on the carbon face of SiC is studied by high-resolution angle-resolved photoemission spectroscopy, where we observe both rotations between adjacent layers and AB-stacking. The band structure of quasi-freestanding AB-bilayers is directly compared with bilayer graphene grown on the Si-face of SiC to study the impact of the substrate on the electronic properties of epitaxial graphene. Our results show that the C-face films are nearly freestanding from an electronic point of view, due to the rotations between graphene layers.

  13. drs (Distantly Related sic) Gene Polymorphisms among emm12-Type Streptococcus pyogenes Isolates

    Science.gov (United States)

    Brandt, Claudia M.; Haase, Gerhard; Spellerberg, Barbara; Holland, Regina; Lütticken, Rudolf

    2003-01-01

    Twenty-eight emm12-type Streptococcus pyogenes isolates from patients with invasive and noninvasive infections or from asymptomatic carriers were genetically typed. Sequencing of drs (distantly related sic [streptococcal inhibitor of complement]) genes identified two novel alleles and revealed a polymorphism for drs similar to that of sic. No association was observed between the five different drs alleles and the five restriction patterns of the vir regulon for the isolates studied. These data suggest that drs sequencing may be useful for further differentiation of S. pyogenes isolates with emm12 and identical vir regulon restriction patterns. PMID:12682191

  14. High efficiency battery converter with SiC devices for residential PV systems

    DEFF Research Database (Denmark)

    Pham, Cam; Teodorescu, Remus; Kerekes, Tamas

    2013-01-01

    The demand for high efficiency and higher power density is a challenge for Si-based semiconductors due to the physical characteristics of material. These can be overcome by employing wide-band-gap materials like SiC. This paper compares a second generator SiC MOSFETs against a normally-on Trench ...... JFETs and theirs performances in a high efficiency battery converter for residential photovoltaic systems. The prototypes are 3 kW converters with more than 98% efficiency and high simplicity and power density....

  15. PSpice Modeling Platform for SiC Power MOSFET Modules with Extensive Experimental Validation

    DEFF Research Database (Denmark)

    Ceccarelli, Lorenzo; Iannuzzo, Francesco; Nawaz, Muhammad

    2016-01-01

    The aim of this work is to present a PSpice implementation for a well-established and compact physics-based SiC MOSFET model, including a fast, experimental-based parameter extraction procedure in a MATLAB GUI environment. The model, originally meant for single-die devices, has been used to simul......The aim of this work is to present a PSpice implementation for a well-established and compact physics-based SiC MOSFET model, including a fast, experimental-based parameter extraction procedure in a MATLAB GUI environment. The model, originally meant for single-die devices, has been used...

  16. Preparation of patterned SiC and SiCN microstructures

    Institute of Scientific and Technical Information of China (English)

    WANG; Hao; SUNG; In-kyung; LI; Xiaodong; KIM; Dong-pyo

    2006-01-01

    Patterned SiC and SiCN microstructures were successfully fabricated on the silicon substrates by using polydimethylsiloxane (PDMS) elastometric stamp as template, polycarbosilane (PCS) and polysilazane (PSZ) as preceramic polymers. The preparing process was followed by precursor infiltration, the curing of the precursor, demolding of the template and pyrolysis of the cured preceramic polymer pattern. It shows that the dimensions of the ceramic patterns can be tailored by using the PDMS molds with different dimensions. The produced ceramic microstructures can be potentially applied in high temperature and high pressure environments due to the advanced properties of the SiC and SiCN ceramics.

  17. Quasi-Freestanding multilayer graphene films on the carbon face of SiC

    Energy Technology Data Exchange (ETDEWEB)

    Siegel, D. A.; Hwang, C. G.; Fedorov, A. V.; Lanzara, A.

    2010-06-30

    The electronic band structure of as-grown and doped graphene grown on the carbon face of SiC is studied by high-resolution angle-resolved photoemission spectroscopy, where we observe both rotations between adjacent layers and AB-stacking. The band structure of quasi-freestanding AB-bilayers is directly compared with bilayer graphene grown on the Si-face of SiC to study the impact of the substrate on the electronic properties of epitaxial graphene. Our results show that the C-face films are nearly freestanding from an electronic point of view, due to the rotations between graphene layers.

  18. Fabrication of broadband antireflective sub-wavelength structures on fluorescent SiC

    DEFF Research Database (Denmark)

    Ou, Yiyu; Jokubavicus, V.; Kaiser, M.

    2013-01-01

    Surface nanocones on 6H-SiC have been developed and demonstrated as an effective method of enhancing the light extraction efficiency from fluorescent SiC layers. The surface reflectance, measured from the opposite direction of light emission, over a broad bandwidth range is significantly suppress...... from 20.5% to 1.0 % after introducing the sub-wavelength structures. An omnidirectional light harvesting enhancement (>91%), is also achieved which promotes fluorescent SiC as a good candidate of wavelength converter for white light-emitting diodes....

  19. Bipolar integrated circuits in SiC for extreme environment operation

    Science.gov (United States)

    Zetterling, Carl-Mikael; Hallén, Anders; Hedayati, Raheleh; Kargarrazi, Saleh; Lanni, Luigia; Malm, B. Gunnar; Mardani, Shabnam; Norström, Hans; Rusu, Ana; Saveda Suvanam, Sethu; Tian, Ye; Östling, Mikael

    2017-03-01

    Silicon carbide (SiC) integrated circuits have been suggested for extreme environment operation. The challenge of a new technology is to develop process flow, circuit models and circuit designs for a wide temperature range. A bipolar technology was chosen to avoid the gate dielectric weakness and low mobility drawback of SiC MOSFETs. Higher operation temperatures and better radiation hardness have been demonstrated for bipolar integrated circuits. Both digital and analog circuits have been demonstrated in the range from room temperature to 500 °C. Future steps are to demonstrate some mixed signal circuits of greater complexity. There are remaining challenges in contacting, metallization, packaging and reliability.

  20. Role of Defects in Swelling and Creep of Irradiated SiC

    Energy Technology Data Exchange (ETDEWEB)

    Szlufarska, Izabela [Univ. of Wisconsin, Madison, WI (United States); Voyles, Paul [Univ. of Wisconsin, Madison, WI (United States); Sridharan, Kumar [Univ. of Wisconsin, Madison, WI (United States); Katoh, Yutai [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

    2016-01-16

    Silicon carbide is a promising cladding material because of its high strength and relatively good corrosion resistance. However, SiC is brittle and therefore SiC-based components need to be carefully designed to avoid cracking and failure by fracture. In design of SiC-based composites for nuclear reactor applications it is essential to take into account how mechanical properties are affected by radiation and temperature, or in other words, what strains and stresses develop in this material due to environmental conditions. While thermal strains in SiC can be predicted using classical theories, radiation-induced strains are much less understood. In particular, it is critical to correctly account for radiation swelling and radiation creep, which contribute significantly to dimensional instability of SiC under radiation. Swelling typically increases logarithmically with radiation dose and saturates at relatively low doses (damage levels of a few dpa). Consequently, swelling-induced stresses are likely to develop within a few months of operation of a reactor. Radiation-induced volume swelling in SiC can be as high as 2%, which is significantly higher than the cracking strain of 0.1% in SiC. Swelling-induced strains will lead to enormous stresses and fracture, unless these stresses can be relaxed via some other mechanism. An effective way to achieve stress relaxation is via radiation creep. Although it has been hypothesized that both radiation swelling and radiation creep are driven by formation of defect clusters, existing models for swelling and creep in SiC are limited by the lack of understanding of specific defects that form due to radiation in the range of temperatures relevant to fuel cladding in light water reactors (LWRs) (<1000°C). For example, defects that can be detected with traditional transmission electron microscopy (TEM) techniques account only for 10-45% of the swelling measured in irradiated SiC. Here, we have undertaken an integrated experimental and