WorldWideScience

Sample records for cubic aluminum nitride

  1. Gas-phase synthesis of hexagonal and cubic phases of aluminum nitride: A method and its advantages

    Science.gov (United States)

    Kudyakova, V. S.; Bannikov, V. V.; Elagin, A. A.; Shishkin, R. A.; Baranov, M. V.; Beketov, A. R.

    2016-03-01

    Experimental results obtained in AlN synthesis by the high-temperature gas-phase method and analysis of reaction products phase composition are briefly described. It is demonstrated for the first time that dispersed aluminum nitride can be synthesized by this method from AlF3 in both hexagonal and cubic modifications.

  2. Transparent polycrystalline cubic silicon nitride

    Science.gov (United States)

    Nishiyama, Norimasa; Ishikawa, Ryo; Ohfuji, Hiroaki; Marquardt, Hauke; Kurnosov, Alexander; Taniguchi, Takashi; Kim, Byung-Nam; Yoshida, Hidehiro; Masuno, Atsunobu; Bednarcik, Jozef; Kulik, Eleonora; Ikuhara, Yuichi; Wakai, Fumihiro; Irifune, Tetsuo

    2017-01-01

    Glasses and single crystals have traditionally been used as optical windows. Recently, there has been a high demand for harder and tougher optical windows that are able to endure severe conditions. Transparent polycrystalline ceramics can fulfill this demand because of their superior mechanical properties. It is known that polycrystalline ceramics with a spinel structure in compositions of MgAl2O4 and aluminum oxynitride (γ-AlON) show high optical transparency. Here we report the synthesis of the hardest transparent spinel ceramic, i.e. polycrystalline cubic silicon nitride (c-Si3N4). This material shows an intrinsic optical transparency over a wide range of wavelengths below its band-gap energy (258 nm) and is categorized as one of the third hardest materials next to diamond and cubic boron nitride (cBN). Since the high temperature metastability of c-Si3N4 in air is superior to those of diamond and cBN, the transparent c-Si3N4 ceramic can potentially be used as a window under extremely severe conditions. PMID:28303948

  3. Ultrahard nanotwinned cubic boron nitride.

    Science.gov (United States)

    Tian, Yongjun; Xu, Bo; Yu, Dongli; Ma, Yanming; Wang, Yanbin; Jiang, Yingbing; Hu, Wentao; Tang, Chengchun; Gao, Yufei; Luo, Kun; Zhao, Zhisheng; Wang, Li-Min; Wen, Bin; He, Julong; Liu, Zhongyuan

    2013-01-17

    Cubic boron nitride (cBN) is a well known superhard material that has a wide range of industrial applications. Nanostructuring of cBN is an effective way to improve its hardness by virtue of the Hall-Petch effect--the tendency for hardness to increase with decreasing grain size. Polycrystalline cBN materials are often synthesized by using the martensitic transformation of a graphite-like BN precursor, in which high pressures and temperatures lead to puckering of the BN layers. Such approaches have led to synthetic polycrystalline cBN having grain sizes as small as ∼14 nm (refs 1, 2, 4, 5). Here we report the formation of cBN with a nanostructure dominated by fine twin domains of average thickness ∼3.8 nm. This nanotwinned cBN was synthesized from specially prepared BN precursor nanoparticles possessing onion-like nested structures with intrinsically puckered BN layers and numerous stacking faults. The resulting nanotwinned cBN bulk samples are optically transparent with a striking combination of physical properties: an extremely high Vickers hardness (exceeding 100 GPa, the optimal hardness of synthetic diamond), a high oxidization temperature (∼1,294 °C) and a large fracture toughness (>12 MPa m(1/2), well beyond the toughness of commercial cemented tungsten carbide, ∼10 MPa m(1/2)). We show that hardening of cBN is continuous with decreasing twin thickness down to the smallest sizes investigated, contrasting with the expected reverse Hall-Petch effect below a critical grain size or the twin thickness of ∼10-15 nm found in metals and alloys.

  4. Method of synthesizing cubic system boron nitride

    Energy Technology Data Exchange (ETDEWEB)

    Yuzu, S.; Sumiya, H.; Degawa, J.

    1987-10-13

    A method is described for synthetically growing cubic system boron nitride crystals by using boron nitride sources, solvents for dissolving the boron nitride sources, and seed crystals under conditions of ultra-high pressure and high temperature for maintaining the cubic system boron nitride stable. The method comprises the following steps: preparing a synthesizing vessel having at least two chambers, arrayed in order in the synthesizing vessel so as to be heated according to a temperature gradient; placing the solvents having different eutectic temperatures in each chamber with respect to the boron nitride sources according to the temperature gradient; placing the boron nitride source in contact with a portion of each of the solvents heated at a relatively higher temperature and placing at least a seed crystal in a portion of each of the solvents heated at a relatively lower temperature; and growing at least one cubic system boron nitride crystal in each of the solvents in the chambers by heating the synthesizing vessel for establishing the temperature gradient while maintaining conditions of ultra-high pressure and high temperature.

  5. Cubic III-nitrides: potential photonic materials

    Science.gov (United States)

    Onabe, K.; Sanorpim, S.; Kato, H.; Kakuda, M.; Nakamura, T.; Nakamura, K.; Kuboya, S.; Katayama, R.

    2011-01-01

    The growth and characterization of some cubic III-nitride films on suitable cubic substrates have been done, namely, c- GaN on GaAs by MOVPE, c-GaN and c-AlGaN on MgO by RF-MBE, and c-InN and c-InGaN (In-rich) on YSZ by RFMBE. This series of study has been much focused on the cubic-phase purity as dependent on the respective growth conditions and resulting electrical and optical properties. For c-GaN and c-InN films, a cubic-phase purity higher than 95% is attained in spite of the metastable nature of the cubic III-nitrides. However, for c-AlGaN and c-InGaN films, the cubic-phase purity is rapidly degraded with significant incorporation of the hexagonal phase through stacking faults on cubic {111} faces which may be exposed on the roughened growing or substrate surface. It has been shown that the electron mobilities in c-GaN and c-AlGaN films are much related to phase purity.

  6. Low pressure growth of cubic boron nitride films

    Science.gov (United States)

    Ong, Tiong P. (Inventor); Shing, Yuh-Han (Inventor)

    1997-01-01

    A method for forming thin films of cubic boron nitride on substrates at low pressures and temperatures. A substrate is first coated with polycrystalline diamond to provide a uniform surface upon which cubic boron nitride can be deposited by chemical vapor deposition. The cubic boron nitride film is useful as a substitute for diamond coatings for a variety of applications in which diamond is not suitable. any tetragonal or hexagonal boron nitride. The cubic boron nitride produced in accordance with the preceding example is particularly well-suited for use as a coating for ultra hard tool bits and abrasives, especially those intended to use in cutting or otherwise fabricating iron.

  7. Electronic structure and magnetic properties of doped Al1- x Ti x N ( x = 0.03, 0.25) compositions based on cubic aluminum nitride from ab initio simulation data

    Science.gov (United States)

    Bannikov, V. V.; Beketov, A. R.; Baranov, M. V.; Elagin, A. A.; Kudyakova, V. S.; Shishkin, R. A.

    2016-05-01

    The phase stability, electronic structure, and magnetic properties of Al1- x Ti x N compositions based on the metastable aluminum nitride modification with the rock-salt structure at low ( x = 0.03) and high ( x = 0.25) concentrations of titanium in the system have been investigated using the results of ab initio band calculations. It has been shown that, at low values of x, the partial substitution is characterized by a positive enthalpy, which, however, changes sign with an increase in the titanium concentration. According to the results of the band structure calculations, the doped compositions have electronic conductivity. For x = 0.03, titanium impurity atoms have local magnetic moments (˜0.6 μB), and the electronic spectrum is characterized by a 100% spin polarization of near-Fermi states. Some of the specific features of the chemical bonding in Al1- x Ti x N cubic phases have been considered.

  8. Optical studies of cubic III-nitride structures

    OpenAIRE

    Powell, Ross E L

    2014-01-01

    The properties of cubic nitrides grown by molecular beam epitaxy (MBE) on GaAs (001) have been studied using optical and electrical techniques. The aim of these studies was the improvement of the growth techniques in order to improve the quality of grown nitrides intended for bulk substrate and optoelectronic device applications. We have also characterised hexagonal nanocolumn structures incorporating indium. Firstly, bulk films of cubic AlxGa1-xN with aluminium fractions (x) spanning the ...

  9. Phase diagrams and synthesis of cubic boron nitride

    CERN Document Server

    Turkevich, V Z

    2002-01-01

    On the basis of phase equilibria, the lowest temperatures, T sub m sub i sub n , above which at high pressures cubic boron nitride crystallization from melt solution is allowable in terms of thermodynamics have been found for a number of systems that include boron nitride.

  10. Experimental core electron density of cubic boron nitride

    DEFF Research Database (Denmark)

    Wahlberg, Nanna; Bindzus, Niels; Bjerg, Lasse

    candidate because of its many similarities with diamond: bonding pattern in the extended network structure, hardness, and the quality of the crystallites.3 However, some degree ionic interaction is a part of the bonding in boron nitride, which is not present in diamond. By investigating the core density...... beyond multipolar modeling of the valence density. As was recently shown in a benchmark study of diamond by Bindzus et al.1 The next step is to investigate more complicated chemical bonding motives, to determine the effect of bonding on the core density. Cubic boron nitride2 lends itself as a perfect...... in boron nitride we may obtain a deeper understanding of the effect of bonding on the total density. We report here a thorough investigation of the charge density of cubic boron nitride with a detailed modelling of the inner atom charge density. By combining high resolution powder X-ray diffraction data...

  11. Subsurface Aluminum Nitride Formation in Iron-Aluminum Alloys

    Science.gov (United States)

    Bott, June H.

    Transformation-induced plasticity (TRIP) steels containing higher amounts of aluminum than conventional steels are ideal for structural automotive parts due to their mechanical properties. However, the aluminum tends to react with any processing environment at high temperatures and therefore presents significant challenges during manufacturing. One such challenge occurs during secondary cooling, reheating, and hot-rolling and is caused by a reaction with nitrogen-rich atmospheres wherein subsurface aluminum nitride forms in addition to internal and external oxides. The nitrides are detrimental to mechanical properties and cause surface cracks. It is important to understand how these nitrides and oxides form and their consequences for the quality of steel products. This study looks at model iron-aluminum (up to 8 wt.% aluminum) alloys and uses confocal laser scanning microscopy, x-ray diffraction, scanning electron microscopy with energy dispersive x-ray spectrometry, and transmission electron microscopy to study the effect of various conditions on the growth and development of these precipitates in a subsurface oxygen-depleted region. By using model alloys and controlling the experimental atmosphere, this study is able to understand some of the more fundamental materials science behind aluminum nitride formation in aluminum-rich iron alloys and the relationship between internal nitride and oxide precipitation and external oxide scale morphology and composition. The iron-aluminum alloys were heated in N2 atmospheres containing oxygen impurities. It was found that nitrides formed when bulk aluminum content was below 8 wt.% when oxygen was sufficiently depleted due to the internal oxidation. In the samples containing 1 wt.% aluminum, the depth of the internal oxide and nitride zones were in agreement with a diffusion-based model. Increasing aluminum content to 3 and 5 wt% had the effects of modifying the surface-oxide scale composition and increasing its continuity

  12. Hardness and thermal stability of cubic silicon nitride

    DEFF Research Database (Denmark)

    Jiang, Jianzhong; Kragh, Flemming; Frost, D. J.

    2001-01-01

    The hardness and thermal stability of cubic spinel silicon nitride (c-Si3N4), synthesized under high-pressure and high-temperature conditions, have been studied by microindentation measurements, and x-ray powder diffraction and scanning electron microscopy, respectively The phase at ambient...... temperature has an average hardness of 35.31 GPa, slightly larger than SiO2 stishovite, which is often referred to as the third hardest material after diamond and cubic boron nitride. The cubic phase is stable up to 1673 K in air. At 1873 K, alpha -and beta -Si3N4 phases are observed, indicating a phase...... transformation sequence of c-to-alpha -to-beta -Si3N4 phases....

  13. Rotary Ultrasonic Machining of Poly-Crystalline Cubic Boron Nitride

    OpenAIRE

    2014-01-01

    Poly-crystalline cubic boron nitride (PCBN) is one of the hardest material. Generally, so hard materials could not be machined by conventional machining methods. Therefore, for this purpose, advanced machining methods have been designed. Rotary ultrasonic machining (RUM) is included among them. RUM is based on abrasive removing mechanism of ultrasonic vibrating diamond particles, which are bonded on active part of rotating tool. It is suitable especially for machining hard and brittle materia...

  14. Field-effect transistors based on cubic indium nitride.

    Science.gov (United States)

    Oseki, Masaaki; Okubo, Kana; Kobayashi, Atsushi; Ohta, Jitsuo; Fujioka, Hiroshi

    2014-02-04

    Although the demand for high-speed telecommunications has increased in recent years, the performance of transistors fabricated with traditional semiconductors such as silicon, gallium arsenide, and gallium nitride have reached their physical performance limits. Therefore, new materials with high carrier velocities should be sought for the fabrication of next-generation, ultra-high-speed transistors. Indium nitride (InN) has attracted much attention for this purpose because of its high electron drift velocity under a high electric field. Thick InN films have been applied to the fabrication of field-effect transistors (FETs), but the performance of the thick InN transistors was discouraging, with no clear linear-saturation output characteristics and poor on/off current ratios. Here, we report the epitaxial deposition of ultrathin cubic InN on insulating oxide yttria-stabilized zirconia substrates and the first demonstration of ultrathin-InN-based FETs. The devices exhibit high on/off ratios and low off-current densities because of the high quality top and bottom interfaces between the ultrathin cubic InN and oxide insulators. This first demonstration of FETs using a ultrathin cubic indium nitride semiconductor will thus pave the way for the development of next-generation high-speed electronics.

  15. Precipitate-Accommodated Plasma Nitriding for Aluminum Alloys

    Institute of Scientific and Technical Information of China (English)

    Patama Visittipitukul; Tatsuhiko Aizawa; Hideyuki Kuwahara

    2004-01-01

    Reliable surface treatment has been explored to improve the strength and wear resistance of aluminum alloy parts in automotives. Long duration time as well as long pre-sputtering time are required for plasma nitriding of aluminum or its alloys only with the thickness of a few micrometers. New plasma inner nitriding is proposed to realize the fast-rate nitriding of aluminum alloys. Al-6Cu alloy is employed as a targeting material in order to demonstrate the effectiveness of this plasma nitriding. Mechanism of fast-rate nitriding process is discussed with consideration of the role of Al2Cu precipitates.

  16. Dynamic Multiaxial Response of a Hot-Pressed Aluminum Nitride

    Science.gov (United States)

    2012-01-05

    Dynamic Multiaxial Response of a Hot-Pressed Aluminum Nitride by Guangli Hu, C. Q. Chen, K. T. Ramesh, and J. W. McCauley ARL-RP-0487...Laboratory Aberdeen Proving Ground, MD 21005-5066 ARL-RP-0487 June 2014 Dynamic Multiaxial Response of a Hot-Pressed Aluminum Nitride...3. DATES COVERED (From - To) January 2010–January 2013 4. TITLE AND SUBTITLE Dynamic Multiaxial Response of a Hot-Pressed Aluminum Nitride 5a

  17. Control of Defects in Aluminum Gallium Nitride ((Al)GaN) Films on Grown Aluminum Nitride (AlN) Substrates

    Science.gov (United States)

    2013-02-01

    like HEMTs . A nanolayer of AlGaN over GaN provides extra 2DEG charge density because of the piezoelectric effect of the AlGaN layer. The higher...Control of Defects in Aluminum Gallium Nitride ((Al) GaN ) Films on Grown Aluminum Nitride (AlN) Substrates by Iskander G. Batyrev, Chi-Chin Wu...Aluminum Gallium Nitride ((Al) GaN ) Films on Grown Aluminum Nitride (AlN) Substrates Iskander G. Batyrev and N. Scott Weingarten Weapons and

  18. Preparation of Ultra-fine Aluminum Nitride in Thermal Plasma

    Institute of Scientific and Technical Information of China (English)

    漆继红; 罗义文; 印永祥; 代晓雁

    2002-01-01

    Ultra-fine aluminum nitride has been synthesized by the evaporation of aluminum powder at atmospheric-pressure nitrogen plasma in a hot-wall reactor. The average size of aluminum nitride particle is 0.11μm measured by scanning electric mirror (SEM), and the purity is at least over 90% evaluated by X-Ray diffraction (XRD). The conversion of Al powder to aluminum nitride is strongly depended on the injection of NH3. Typical experimental parameters such as the feed rate of raw material, the flow rate of ammonia and the position of injecting aluminum powder into the reactor are given.

  19. Defect reduction in seeded aluminum nitride crystal growth

    Science.gov (United States)

    Bondokov, Robert T.; Morgan, Kenneth E.; Schowalter, Leo J.; Slack, Glen A.

    2017-06-06

    Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density .ltoreq.100 cm.sup.-2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.

  20. Defect reduction in seeded aluminum nitride crystal growth

    Energy Technology Data Exchange (ETDEWEB)

    Bondokov, Robert T.; Morgan, Kenneth E.; Schowalter, Leo J.; Stack, Glen A.

    2017-04-18

    Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density.ltoreq.100 cm.sup.-2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.

  1. Aluminum Reduction and Nitridation of Bauxite

    Institute of Scientific and Technical Information of China (English)

    ZHANG Zhikuan; ZHANG Dianwei; XU Enxia; HOU Xinmei; DONG Yanling

    2007-01-01

    The application of bauxite with low Al2O3 content has been studied in this paper and β-SiAlON has been obtained from two kinds of bauxites (Al203 content 68.08 mass% and 46.30 mass% respectively) by aluminum reduction and nitridation method.The sequence of reactions has been studied using thermal analysis (TG-DTA),X-ray diffraction (XRD) analysis and scanning electron microscopy (SEM) with EDS.Compared with carbon thermal reduction and nitridation of aluminosilicates employed presently,the reaction in the system of bauxite-Al-N2 occurs at lower temperature.β-SiAlON appears as one of the main products from 1573K and exists' stably in the range of the present experimental temperature.The microstructure of β-SiAlON obtained at 1773 K is short column with 5-10μm observed by SEM.

  2. Studies of Organometallic Precursors to Aluminum Nitride

    Science.gov (United States)

    1986-05-09

    adduct undergoes thermal decomposition to a series of intermediate R33Al +NH + R3Al :N~H- + -++ AiN + 3R1I (where at CH3, CAH, C09g, etc.) The...which the initially formed Lewis acid/base adduct undergoes thermal decomposition to a series of Intermediate altylaluminum-amide and -imide species...SIOPPLEM.ENTARY NOTATION to be publ ished in Mats. Res. Soc. Syinp. Proc. (19F86) -IL RU SBR _ Aluminum nitride, organomnetallic precutsors,imcl C7Se1

  3. Research on the Cutting Performance of Cubic Boron Nitride Tools

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    There were only two kinds of superhard tool material at the past, i.e. diamond and cubic boron nitride (CBN). Manmade diamond and CBN are manufactured by the middle of 20th century. Various manufacturing methods and manmade superhard materials were developed later. They were widely used in different industry and science areas. Recently, a new kind of superhard tool material, C 3N 4 coating film, had been developed. American physical scientists, A. M. Liu and M. L. Cohen, designed a new kind of inorganic c...

  4. Compressibility and thermal expansion of cubic silicon nitride

    DEFF Research Database (Denmark)

    Jiang, Jianzhong; Lindelov, H.; Gerward, Leif

    2002-01-01

    The compressibility and thermal expansion of the cubic silicon nitride (c-Si3N4) phase have been investigated by performing in situ x-ray powder-diffraction measurements using synchrotron radiation, complemented with computer simulations by means of first-principles calculations. The bulk...... compressibility of the c-Si3N4 phase originates from the average of both Si-N tetrahedral and octahedral compressibilities where the octahedral polyhedra are less compressible than the tetrahedral ones. The origin of the unit cell expansion is revealed to be due to the increase of the octahedral Si-N and N-N bond...

  5. Rotary Ultrasonic Machining of Poly-Crystalline Cubic Boron Nitride

    Directory of Open Access Journals (Sweden)

    Kuruc Marcel

    2014-12-01

    Full Text Available Poly-crystalline cubic boron nitride (PCBN is one of the hardest material. Generally, so hard materials could not be machined by conventional machining methods. Therefore, for this purpose, advanced machining methods have been designed. Rotary ultrasonic machining (RUM is included among them. RUM is based on abrasive removing mechanism of ultrasonic vibrating diamond particles, which are bonded on active part of rotating tool. It is suitable especially for machining hard and brittle materials (such as glass and ceramics. This contribution investigates this advanced machining method during machining of PCBN.

  6. Aluminum nitride for heatspreading in RF IC's

    Science.gov (United States)

    La Spina, L.; Iborra, E.; Schellevis, H.; Clement, M.; Olivares, J.; Nanver, L. K.

    2008-09-01

    To reduce the electrothermal instabilities in silicon-on-glass high-frequency bipolar devices, the integration of thin-film aluminum nitride as a heatspreader is studied. The AlN is deposited by reactive sputtering and this material is shown to fulfill all the requirements for actively draining heat from RF IC's, i.e., it has good process compatibility, sufficiently high thermal conductivity and good electrical isolation also at high frequencies. The residual stress and the piezoelectric character of the material, both of which can be detrimental for the present application, are minimized by a suitable choice of deposition conditions including variable biasing of the substrate in a multistep deposition cycle. Films of AlN as thick as 4 μm are successfully integrated in RF silicon-on-glass bipolar junction transistors that display a reduction of more than 70% in the value of the thermal resistance.

  7. Structure and energetics of nanotwins in cubic boron nitrides

    Science.gov (United States)

    Zheng, Shijian; Zhang, Ruifeng; Huang, Rong; Taniguchi, Takashi; Ma, Xiuliang; Ikuhara, Yuichi; Beyerlein, Irene J.

    2016-08-01

    Recently, nanotwinned cubic boron nitrides (NT c-BN) have demonstrated extraordinary leaps in hardness. However, an understanding of the underlying mechanisms that enable nanotwins to give orders of magnitude increases in material hardness is still lacking. Here, using transmission electron microscopy, we report that the defect density of twin boundaries depends on nanotwin thickness, becoming defect-free, and hence more stable, as it decreases below 5 nm. Using ab initio density functional theory calculations, we reveal that the Shockley partials, which may dominate plastic deformation in c-BNs, show a high energetic barrier. We also report that the c-BN twin boundary has an asymmetrically charged electronic structure that would resist migration of the twin boundary under stress. These results provide important insight into possible nanotwin hardening mechanisms in c-BN, as well as how to design these nanostructured materials to reach their full potential in hardness and strength.

  8. Submicron cubic boron nitride as hard as diamond

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Guoduan; Kou, Zili, E-mail: kouzili@scu.edu.cn, E-mail: yanxz@hpstar.ac.cn; Lei, Li; Peng, Fang; Wang, Qiming; Wang, Kaixue; Wang, Pei; Li, Liang; Li, Yong; Wang, Yonghua [Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610065 (China); Yan, Xiaozhi, E-mail: kouzili@scu.edu.cn, E-mail: yanxz@hpstar.ac.cn; Li, Wentao [Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610065 (China); Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203 (China); Bi, Yan [Institute of Fluid Physics and National Key Laboratory of Shockwave and Detonation Physic, China Academy of Engineering Physics, Mianyang 621900 (China); Leng, Yang [Department of Mechanical Engineering, Hong Kong University of Science and Technology, Kowloon, Hong Kong (China); He, Duanwei [Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610065 (China); Institute of Fluid Physics and National Key Laboratory of Shockwave and Detonation Physic, China Academy of Engineering Physics, Mianyang 621900 (China)

    2015-03-23

    Here, we report the sintering of aggregated submicron cubic boron nitride (sm-cBN) at a pressure of 8 GPa. The sintered cBN compacts exhibit hardness values comparable to that of single crystal diamond, fracture toughness about 5-fold that of cBN single crystal, in combination with a high oxidization temperature. Thus, another way has been demonstrated to improve the mechanical properties of cBN besides reducing the grain size to nano scale. In contrast to other ultrahard compacts with similar hardness, the sm-cBN aggregates are better placed for potential industrial application, as their relative low pressure manufacturing perhaps be easier and cheaper.

  9. Structure and energetics of nanotwins in cubic boron nitrides

    Energy Technology Data Exchange (ETDEWEB)

    Zheng, Shijian, E-mail: sjzheng@imr.ac.cn, E-mail: zrf@buaa.edu.cn; Ma, Xiuliang [Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016 (China); Zhang, Ruifeng, E-mail: sjzheng@imr.ac.cn, E-mail: zrf@buaa.edu.cn [School of Materials Science and Engineering, and International Research Institute for Multidisciplinary Science, Beihang University, Beijing 100191 (China); Huang, Rong [Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, Shanghai 200062 (China); Taniguchi, Takashi [National Institute for Materials Science, Tsukuba, Ibaraki 305-0044 (Japan); Ikuhara, Yuichi [Nanostructures Research Laboratory, Japan Fine Ceramics Center, Nagoya 456-8587 (Japan); Institute of Engineering Innovation, The University of Tokyo, Tokyo 113-8656 (Japan); Beyerlein, Irene J. [Theoretical Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)

    2016-08-22

    Recently, nanotwinned cubic boron nitrides (NT c-BN) have demonstrated extraordinary leaps in hardness. However, an understanding of the underlying mechanisms that enable nanotwins to give orders of magnitude increases in material hardness is still lacking. Here, using transmission electron microscopy, we report that the defect density of twin boundaries depends on nanotwin thickness, becoming defect-free, and hence more stable, as it decreases below 5 nm. Using ab initio density functional theory calculations, we reveal that the Shockley partials, which may dominate plastic deformation in c-BNs, show a high energetic barrier. We also report that the c-BN twin boundary has an asymmetrically charged electronic structure that would resist migration of the twin boundary under stress. These results provide important insight into possible nanotwin hardening mechanisms in c-BN, as well as how to design these nanostructured materials to reach their full potential in hardness and strength.

  10. Fluorescent lighting with aluminum nitride phosphors

    Energy Technology Data Exchange (ETDEWEB)

    Cherepy, Nerine J.; Payne, Stephen A.; Seeley, Zachary M.; Srivastava, Alok M.

    2016-05-10

    A fluorescent lamp includes a glass envelope; at least two electrodes connected to the glass envelope; mercury vapor and an inert gas within the glass envelope; and a phosphor within the glass envelope, wherein the phosphor blend includes aluminum nitride. The phosphor may be a wurtzite (hexagonal) crystalline structure Al.sub.(1-x)M.sub.xN phosphor, where M may be drawn from beryllium, magnesium, calcium, strontium, barium, zinc, scandium, yttrium, lanthanum, cerium, praseodymium, europium, gadolinium, terbium, ytterbium, bismuth, manganese, silicon, germanium, tin, boron, or gallium is synthesized to include dopants to control its luminescence under ultraviolet excitation. The disclosed Al.sub.(1-x)M.sub.xN:Mn phosphor provides bright orange-red emission, comparable in efficiency and spectrum to that of the standard orange-red phosphor used in fluorescent lighting, Y.sub.2O.sub.3:Eu. Furthermore, it offers excellent lumen maintenance in a fluorescent lamp, and does not utilize "critical rare earths," minimizing sensitivity to fluctuating market prices for the rare earth elements.

  11. MEMS Aluminum Nitride Technology for Inertial Sensors

    Science.gov (United States)

    Vigevani, Gabriele

    2011-12-01

    The design and fabrication of MEMS Inertial Sensors (both accelerometers and gyroscopes) made of Aluminum Nitride (AlN) is described in this dissertation. The goal of this work is to design and fabricate inertial sensors based on c-axis oriented AlN polycrystalline thin films. AlN is a post-CMOS compatible piezoelectric material widely used for acoustic resonators, such Bulk Acoustic Wave (BAW) and Lamb Wave Resonators (LWR). In this work we develop the design techniques necessary to obtain inertial sensors with AlN thin film technology. Being able to use AlN as structural material for both acoustic wave resonator and sensing elements is key to achieve the three level integration of RF-MEMS components, sensing elements and CMOS in the same chip. Using AlN as integration platform is particularly suitable for large consumer emerging markets where production costs are the major factor that determine a product success. In order to achieve a platform integration, the first part of this work focuses on the fabrication process: starting from the fabrication technology used for LWR devices, this work shows that by slightly modifying some of the fabrication steps it is possible to obtain MEMS accelerometers and gyroscopes with the same structural layers used for LWR. In the second part of this work, an extensive analysis, performed with analytical and Finite Element Models (FEM), is developed for beam and ring based structures. These models are of great importance as they provide tools to understand the physics of lateral piezoelectric beam actuation and the major limitations of this technology. Based on the models developed for beam based resonators, we propose two designs for Double Ended Tuning Fork (DETF) based accelerometers. In the last part of the dissertation, we show the experimental results and the measurements performed on actual devices. As this work shows analytically and experimentally, there are some fundamental constraints that limit the ultimate sensitivity

  12. Epitaxial aluminum nitride tunnel barriers grown by nitridation with a plasma source

    NARCIS (Netherlands)

    Zijlstra, T.; Lodewijk, C.F.J.; Vercruyssen, N.; Tichelaar, F.D.; Loudkov, D.N.; Klapwijk, T.M.

    2007-01-01

    High critical current-density (10 to 420 kA/cm2) superconductor-insulator-superconductor tunnel junctions with aluminum nitride barriers have been realized using a remote nitrogen plasma from an inductively coupled plasma source operated in a pressure range of 10−3–10−1 mbar. We find a much better r

  13. Field emission from open ended aluminum nitride nanotubes

    Science.gov (United States)

    Tondare, V. N.; Balasubramanian, C.; Shende, S. V.; Joag, D. S.; Godbole, V. P.; Bhoraskar, S. V.; Bhadbhade, M.

    2002-06-01

    This letter reports the field emission measurements from the nanotubes of aluminum nitride which were synthesized by gas phase condensation using the solid-vapor equilibria. A dc arc plasma reactor was used for producing the vapors of aluminum in a reactive nitrogen atmosphere. Nanoparticles and nanotubes of aluminum nitride were first characterized by transmission electron microscope and tube dimensions were found to be varying from 30 to 200 nm in diameter and 500 to 700 nm in length. These tubes were mixed with nanoparticles of size range between 5 and 200 nm in diameter. Tungsten tips coated with these nanoparticles and tubes were used as a field emitter. The field emission patterns display very interesting features consisting of sharp rings which were often found to change their shapes. The patterns are attributed to the open ended nanotubes of aluminum nitride. A few dot patterns corresponding to the nanoparticles were also seen to occur. The Fowler-Nordheim plots were seen to be nonlinear in nature, which reflects the semi-insulating behavior of the emitter. The field enhancement factor is estimated to be 34 500 indicating that the field enhancement due to the nanometric size of the emitter is an important cause for the observed emission.

  14. Flexible pulse-wave sensors from oriented aluminum nitride nanocolumns

    Science.gov (United States)

    Akiyama, Morito; Ueno, Naohiro; Nonaka, Kazuhiro; Tateyama, Hiroshi

    2003-03-01

    Flexible pulse-wave sensors were fabricated from density-packed oriented aluminum nitride nanocolumns prepared on aluminum foils. The nanocolumns were prepared by the rf magnetron sputtering method and were perpendicularly oriented to the aluminum foil surfaces. The sensor structure is laminated, and the structure contributes to avoiding unexpected leakage of an electric charge. The resulting sensor thickness is 50 μm. The sensor is flexible like aluminum foil and can respond to frequencies from 0.1 to over 100 Hz. The sensitivity of the sensor to pressure is proportional to the surface area. The sensor sensitively causes reversible charge signals that correlate with the pulse wave form, which contains significant information on arteriosclerosis and cardiopathy of a man sitting on it.

  15. Numerical Simulation of Ballistic Impact of Layered Aluminum Nitride Ceramic

    Science.gov (United States)

    2015-09-01

    configuration simulated in this work duplicates that examined in experiments of Yadav and Ravichandran.1 As shown in Fig. 1a, a WHA (tungsten heavy alloy... WHA ) 157 c aJohnson GR, Holmquist TJ, Beissel SR. Response of aluminum nitride (including a phase change) to large strains, high strain rates, and...results cannot be isolated in the present set of simulations, but possibilities include the following: the WHA material may be weaker than that

  16. Reactive Mechanical Alloying Synthesis of Nanocrystalline Cubic Zirconium Nitride

    Institute of Scientific and Technical Information of China (English)

    QIU Li-Xia; YAO Bin; DING Zhan-Hui; ZHAO Xu-Dong; JI Hong; DU Xiao-Bo; JIA Xiao-Peng; ZHENG Wei-Tao

    2008-01-01

    Zirconium nitride powders with rock salt structure (γ-ZrNx) are prepared by mechanical milling of a mixture of Zirconium and hexagonal boron nitride (h-BN) powders.The products are analysed by x-ray diffraction (XRD),scanning electron microscopy (SEM),and Raman spectroscopy (RS).The formation mechanism of γ-ZrNx by ball milling technique is investigated in detail.N atoms diffuse from amorphous BN (a-BN) into Zr to form Zr(N) solid solution alloy,then the Zr(N) solid solution alloy decomposes into γ-ZrNx.No ZrB2 is observed in the as-milled samples or the samples annealed at 1050℃ for 2 h.

  17. Electrical Activation Studies of Silicon Implanted Aluminum Gallium Nitride with High Aluminum Mole Fraction

    Science.gov (United States)

    2007-12-01

    important to minimize imperfections and defects as well as the amount of unwanted impurities. The most common bulk method is the Czochralski Method , in...demonstrates a method for producing highly conductive Si- implanted n-type aluminum gallium nitride (AlxGa1-xN) alloys, and represents a comprehensive...54 IV. Experimental Method ..................................................................................... 57 Sample

  18. Red-emitting manganese-doped aluminum nitride phosphor

    Science.gov (United States)

    Cherepy, Nerine J.; Payne, Stephen A.; Harvey, Nicholas M.; Åberg, Daniel; Seeley, Zachary M.; Holliday, Kiel S.; Tran, Ich C.; Zhou, Fei; Martinez, H. Paul; Demeyer, Jessica M.; Drobshoff, Alexander D.; Srivastava, Alok M.; Camardello, Samuel J.; Comanzo, Holly A.; Schlagel, Deborah L.; Lograsso, Thomas A.

    2016-04-01

    We report high efficiency luminescence with a manganese-doped aluminum nitride red-emitting phosphor under 254 nm excitation, as well as its excellent lumen maintenance in fluorescent lamp conditions, making it a candidate replacement for the widely deployed europium-doped yttria red phosphor. Solid-state reaction of aluminum nitride powders with manganese metal at 1900 °C, 10 atm N2 in a reducing environment results in nitrogen deficiency, as revealed diffuse reflectance spectra. When these powders are subsequently annealed in flowing nitrogen at 1650 °C, higher nitrogen content is recovered, resulting in white powders. Silicon was added to samples as an oxygen getter to improve emission efficiency. NEXAFS spectra and DFT calculations indicate that the Mn dopant is divalent. From DFT calculations, the UV absorption band is proposed to be due to an aluminum vacancy coupled with oxygen impurity dopants, and Mn2+ is assumed to be closely associated with this site. In contrast with some previous reports, we find that the highest quantum efficiency with 254 nm excitation (Q.E. = 0.86 ± 0.14) is obtained in aluminum nitride with a low manganese doping level of 0.06 mol.%. The principal Mn2+ decay of 1.25 ms is assigned to non-interacting Mn sites, while additional components in the microsecond range appear with higher Mn doping, consistent with Mn clustering and resultant exchange coupling. Slower components are present in samples with low Mn doping, as well as strong afterglow, assigned to trapping on shallow traps followed by detrapping and subsequent trapping on Mn.

  19. Vacancy-induced mechanical stabilization of cubic tungsten nitride

    Science.gov (United States)

    Balasubramanian, Karthik; Khare, Sanjay; Gall, Daniel

    2016-11-01

    First-principles methods are employed to determine the structural, mechanical, and thermodynamic reasons for the experimentally reported cubic WN phase. The defect-free rocksalt phase is both mechanically and thermodynamically unstable, with a negative single crystal shear modulus C44=-86 GPa and a positive enthalpy of formation per formula unit Hf=0.623 eV with respect to molecular nitrogen and metallic W. In contrast, WN in the NbO phase is stable, with C44=175 GPa and Hf=-0.839 eV . A charge distribution analysis reveals that the application of shear strain along [100] in rocksalt WN results in an increased overlap of the t2 g orbitals which causes electron migration from the expanded to the shortened W-W bond axes, yielding a negative shear modulus due to an energy reduction associated with new bonding states 8.1-8.7 eV below the Fermi level. A corresponding shear strain in WN in the NbO phase results in an energy increase and a positive shear modulus. The mechanical stability transition from the NaCl to the NbO phase is explored using supercell calculations of the NaCl structure containing Cv=0 %-25 % cation and anion vacancies, while keeping the N-to-W ratio constant at unity. The structure is mechanically unstable for Cvconcentration, the isotropic elastic modulus E of cubic WN is zero, but increases steeply to E =445 GPa for Cv=10 % , and then less steeply to E =561 GPa for Cv=25 % . Correspondingly, the hardness estimated using Tian's model increases from 0 to 15 to 26 GPa as Cv increases from 5% to 10% to 25%, indicating that a relatively small vacancy concentration stabilizes the cubic WN phase and that the large variations in reported mechanical properties of WN can be attributed to relatively small changes in Cv.

  20. Ion-induced stress relaxation during the growth of cubic boron nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Abendroth, B.E.

    2004-08-01

    in this thesis the deposition of cubic boron nitride films by magnetron sputtering is described. The deposition process is analyzed by Langmuir-probe measurement and energy resolved mass spectroscopy. the films are studied by stress measurement, spectroscopic ellipsometry, infrared spectroscopy, elastic recoil detection analysis, Rutherford backscattering spectroscopy, X-ray absorption near edge spectroscopy, X-ray diffraction, and transmission electron microscopy. Discussed are the stress relaxation and the microstructure and bonding characteristics together with the effects of ion bombardement. (HSI)

  1. Aluminum nitride nanophotonic circuits operating at ultraviolet wavelengths

    Energy Technology Data Exchange (ETDEWEB)

    Stegmaier, M.; Ebert, J.; Pernice, W. H. P., E-mail: wolfram.pernice@kit.edu [Institute of Nanotechnology, Karlsruhe Institute of Technology, 76133 Karlsruhe (Germany); Meckbach, J. M.; Ilin, K.; Siegel, M. [Institute of Micro- und Nanoelectronic Systems, Karlsruhe Institute of Technology, 76187 Karlsruhe (Germany)

    2014-03-03

    Aluminum nitride (AlN) has recently emerged as a promising material for integrated photonics due to a large bandgap and attractive optical properties. Exploiting the wideband transparency, we demonstrate waveguiding in AlN-on-Insulator circuits from near-infrared to ultraviolet wavelengths using nanophotonic components with dimensions down to 40 nm. By measuring the propagation loss over a wide spectral range, we conclude that both scattering and absorption of AlN-intrinsic defects contribute to strong attenuation at short wavelengths, thus providing guidelines for future improvements in thin-film deposition and circuit fabrication.

  2. High-Q aluminum nitride photonic crystal nanobeam cavities

    CERN Document Server

    Pernice, W H P; Schuck, C; Tang, H X

    2012-01-01

    We demonstrate high optical quality factors in aluminum nitride (AlN) photonic crystal nanobeam cavities. Suspended AlN photonic crystal nanobeams are fabricated in sputter-deposited AlN-on-insulator substrates using a self-protecting release process. Employing one-dimensional photonic crystal cavities coupled to integrated optical circuits we measure quality factors up to 146,000. By varying the waveguide-cavity coupling gap, extinction ratios in excess of 15 dB are obtained. Our results open the door for integrated photonic bandgap structures made from a low loss, wide-transparency, nonlinear optical material system.

  3. Thick film fabrication of aluminum nitride microcircuits. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Perdieu, L.H.

    1994-03-01

    A new substrate material, aluminum nitride (AlN), and 11 new thick film inks were analyzed to determine their chemical compatibility, their electrical properties, their mechanical properties, and their overall suitability for use in the manufacturing of high-power microcircuits with efficient thermal properties. Because high-power chips emit a great deal of heat in a small surface area, a new substrate material was needed to dissipate that heat faster than the substrate material currently in use. Overall, the new materials were found to be acceptable for accomplishing this purpose.

  4. Use of aluminum nitride to obtain temperature measurements in a high temperature and high radiation environment

    Science.gov (United States)

    Wernsman, Bernard R.; Blasi, Raymond J.; Tittman, Bernhard R.; Parks, David A.

    2016-04-26

    An aluminum nitride piezoelectric ultrasonic transducer successfully operates at temperatures of up to 1000.degree. C. and fast (>1 MeV) neutron fluencies of more than 10.sup.18 n/cm.sup.2. The transducer comprises a transparent, nitrogen rich aluminum nitride (AlN) crystal wafer that is coupled to an aluminum cylinder for pulse-echo measurements. The transducer has the capability to measure in situ gamma heating within the core of a nuclear reactor.

  5. Studies on Tribological Behavior of Aluminum Nitride-Coated Steel

    Science.gov (United States)

    Ionescu, G. C.; Nae, I.; Ripeanu, R. G.; Dinita, A.; Stan, G.

    2017-02-01

    The new opportunities introduced by the large development of the IoT (internet of things) are increasing the demand for sensors to be located as close as possible to the supervised process. The Aluminum Nitride (AIN) is one of the most promising materials for sensors due to its piezoelectric, excellent mechanical properties, chemical inertness and high melting point. Due to these material properties, the AlN sensors are suitable to operate in high temperature and harsh environment conditions and therefore are very promising to be employed in industrial applications. In this article are presented the studies conducted on several Aluminum Nitride-Coated Steel structures with the goal of producing sensors embedded in the ball bearings, bearings and other mobile parts of machine tools. The experiments were conducted on simple coatings structures without lubricating materials and the obtained results are promising, demonstrating that, with some limitations the AIN could be used in such applications. This paper was accepted for publication in Proceedings after double peer reviewing process but was not presented at the Conference ROTRIB’16

  6. Optical frequency comb generation from aluminum nitride micro-ring resonator

    CERN Document Server

    Jung, Hojoong; Fong, King Y; Zhang, Xufeng; Tang, Hong X

    2013-01-01

    Aluminum nitride is an appealing nonlinear optical material for on-chip wavelength conversion. Here we report optical frequency comb generation from high quality factor aluminum nitride micro-ring resonators integrated on silicon substrates. By engineering the waveguide structure to achieve near-zero dispersion at telecommunication wavelengths and optimizing the phase matching for four-wave mixing, frequency combs are generated with a single wavelength continuous-wave pump laser. The Kerr coefficient (n2) of aluminum nitride is further extracted from our experimental results.

  7. An experimental study on the aluminum nitride flux detector

    Energy Technology Data Exchange (ETDEWEB)

    Moon, Byung Soo; Hwang, In Koo; Chung, Chong Eun; Kwon, Kee Choon

    2004-06-01

    The result of a study on the 'development of a solid state flux monitor' performed as a part of the I-NERI project 'development of enhanced reactor operation through improved sensing and control at nuclear power pants' is described in this report. Dozens of aluminum nitride based flux sensors have been fabricated with different sizes 3mm x 3mm x 0.635mm and 3mm x 3mm x 0.381mm by ORNL and were packaged with MGO insulation by KAERI for a feasibility study to use them as the in-core flux monitor in the nuclear power plants. In chapter 1, we describe the basic properties of the aluminum nitride and the geometric shape of the fabricated detectors with the signal cables attached. In chapter 2, we describe the calculation results based on the EGS4 and MCNP4B code to determine the neutron sensitivity of the aluminum nitride and the optimal thickness for the gamma rejection for the case of the detectors being used in the pulse mode operation. In chapter 3, we describe the results of measurements for the insulation resistance and of the experiments to determine the optimum operating voltage of the sensors after the packaging with long cables attached. In chapter 4, we describe the results of experiments to measure the high gamma flux from the 187Ci Co60, 77,000Ci Co60, and the 200,000Ci Co60 at the high level irradiation facility at KAERI at various distances and compared the results with the EGS4 based calculation results. In chapter 5, we describe the results of pulse counts at the IR beam port of the Hanaro reactor, the low flux measurements in the current mode at the Pohang accelerator, and the high flux measurements in the current mode inside the cold neutron source hole of the Hanaro reacter. Finally, in chapter 6, we analyze the results of the above experiments and describe the necessary future work.

  8. Molecular beam epitaxy of cubic III-nitrides on GaAs substrates

    Energy Technology Data Exchange (ETDEWEB)

    As, D.J.; Schikora, D.; Lischka, K. [Dept. of Physics, Univ. of Paderborn, Paderborn (Germany)

    2003-07-01

    Molecular beam epitaxy has successfully been used to grow crystalline layers of group III-nitrides (GaN, AlN and InN) with cubic (zinc-blende) structure on GaAs substrates. In this article, we discuss these efforts that, despite inherent difficulties due to the metastability of the c-III nitrides, led to substantial improvements of the structural, electrical and optical quality of these wide gap semiconductors. We review experimental work concerned with the epitaxy of c-GaN and the control of the growth process in-situ, the important issue of p- and n-type doping of c-GaN and investigations of the structural and optical properties of c-InGaN and c-AlGaN. (orig.)

  9. Growth of aluminum nitride bulk crystals by sublimation

    Science.gov (United States)

    Liu, Bei

    The commercial potential of III-nitride semiconductors is already being realized by the appearance of high efficiency, high reliability, blue and green LEDS around the world. However, the lack of a native nitride substrate has hindered the full-realization of more demanding III-nitride devices. To date, single aluminum nitride (AlN) crystals are not commercially available. New process investigation is required to scale up the crystal size. New crucibles stable up to very high temperatures (˜2500°C) are needed which do not incorporate impurities into the growing crystals. In this thesis, the recent progresses in bulk AlN crystal growth by sublimation-recondensation were reviewed first. The important physical, optical and electrical properties as well as chemical and thermal stabilities of AlN were discussed. The development of different types of growth procedures including self-seeding, substrate employed and a new "sandwich" technique were covered in detail. Next, the surface morphology and composition at the initial stages of AlN grown on 6H-SiC (0001) were investigated. Discontinuous AlN coverage occurred after 15 minutes of growth. The initial discontinuous nucleation of AlN and different lateral growth of nuclei indicated discontinuous AIN direct growth on on-axis 6H-SiC substrates. At the temperature in excess of 2100°C, the durability of the furnace fixture materials (crucibles, retorts, etc.) remains a critical problem. The thermal and chemical properties and performance of several refractory materials, including tantalum carbide, niobium carbide, tungsten, graphite, and hot-pressed boron nitride (HPBN), in inert gas, as well as under AIN crystal growth conditions were discussed. TaC and NbC are the most stable crucible materials in the crystal growth system. HPBN crucible is more suitable for AlN self-seeding growth, as crystals tend to nucleate in thin colorless platelets with low dislocation density. Finally, clear and colorless thin platelet Al

  10. 193 nm deep-ultraviolet solar-blind cubic boron nitride based photodetectors

    Science.gov (United States)

    Soltani, A.; Barkad, H. A.; Mattalah, M.; Benbakhti, B.; De Jaeger, J.-C.; Chong, Y. M.; Zou, Y. S.; Zhang, W. J.; Lee, S. T.; BenMoussa, A.; Giordanengo, B.; Hochedez, J.-F.

    2008-02-01

    Deep-ultraviolet (DUV) solar-blind photodetectors based on high-quality cubic boron nitride (cBN) films with a metal/semiconductor/metal configuration were fabricated. The design of interdigitated circular electrodes enables high homogeneity of electric field between pads. The DUV photodetectors present a peak responsivity at 180nm with a very sharp cutoff wavelength at 193nm and a visible rejection ratio (180 versus 250nm) of more than four orders of magnitude. The characteristics of the photodetectors present extremely low dark current, high breakdown voltage, and high responsivity, suggesting that cBN films are very promising for DUV sensing.

  11. N2 plasma etching processes of microscopic single crystals of cubic boron nitride

    Science.gov (United States)

    Tamura, Takahiro; Takami, Takuya; Yanase, Takashi; Nagahama, Taro; Shimada, Toshihiro

    2017-06-01

    We studied the N2 plasma etching of cubic boron nitride (cBN). We have developed experimental techniques for handling 200-µm-size single crystals for the preparation of surfaces with arbitrary crystal indexes, plasma processes, and surface analyses. We successfully prepared smooth surfaces of cBN with roughness smaller than 10 nm and found that the etching behavior was strongly influenced by the surface indexes. The morphology of the etched surfaces can be explained by the chemical stability of (111)B surfaces.

  12. Broadband directional coupling in aluminum nitride nanophotonic circuits

    CERN Document Server

    Stegmaier, Matthias

    2013-01-01

    Aluminum nitride (AlN)-on-insulator has emerged as a promising platform for the realization of linear and non-linear integrated photonic circuits. In order to efficiently route optical signals on-chip, precise control over the interaction and polarization of evanescently coupled waveguide modes is required. Here we employ nanophotonic AlN waveguides to realize directional couplers with a broad coupling bandwidth and low insertion loss. We achieve uniform splitting of incoming modes, confirmed by high extinction-ratio exceeding 33dB in integrated Mach-Zehnder Interferometers. Optimized three-waveguide couplers furthermore allow for extending the coupling bandwidth over traditional side-coupled devices by almost an order of magnitude, with variable splitting ratio. Our work illustrates the potential of AlN circuits for coupled waveguide optics, DWDM applications and integrated polarization diversity schemes.

  13. Temperature Compensation of Aluminum Nitride Lamb Wave Resonators Utilizing the Lowest-Order Symmetric Mode

    Science.gov (United States)

    2012-12-14

    82. D. P. Morgan, Surface- Wave Devices for Signal Processing, Holland: Elsevier, 1991. 83. L. E. McNeil, M. Grimsditch, and R. H. French ... Vibrational spectroscopy of aluminum nitride,” J. Am. Ceram. Soc., vol. 76, pp. 1132–1136, May 1993. 84. K. Hashimoto, Surface Acoustic Wave Devices in...Temperature Compensation of Aluminum Nitride Lamb Wave Resonators Utilizing the Lowest-Order Symmetric Mode Chih-Ming Lin Electrical Engineering and

  14. Gas-Phase Combustion Synthesis of Aluminum Nitride Powder

    Science.gov (United States)

    Axelbaum, R. L.; Lottes, C. R.; Huertas, J. I.; Rosen, L. J.

    1996-01-01

    Due to its combined properties of high electrical resistivity and high thermal conductivity aluminum nitride (AlN) is a highly desirable material for electronics applications. Methods are being sought for synthesis of unagglomerated, nanometer-sized powders of this material, prepared in such a way that they can be consolidated into solid compacts having minimal oxygen content. A procedure for synthesizing these powders through gas-phase combustion is described. This novel approach involves reacting AlCl3, NH3, and Na vapors. Equilibrium thermodynamic calculations show that 100% yields can be obtained for these reactants with the products being AlN, NaCl, and H2. The NaCl by-product is used to coat the AlN particles in situ. The coating allows for control of AlN agglomeration and protects the powders from hydrolysis during post-flame handling. On the basis of thermodynamic and kinetic considerations, two different approaches were employed to produce the powder, in co-flow diffusion flame configurations. In the first approach, the three reactants were supplied in separate streams. In the second, the AlCl3 and NH3 were premixed with HCl and then reacted with Na vapor. X-ray diffraction (XRD) spectra of as-produced powders show only NaCl for the first case and NaCl and AlN for the second. After annealing at 775 C tinder dynamic vacuum, the salt was removed and XRD spectra of powders from both approaches show only AlN. Aluminum metal was also produced in the co-flow flame by reacting AlCl3 with Na. XRD spectra of as-produced powders show the products to be only NaCl and elemental aluminum.

  15. Effect of urea on synthesis of aluminum nitride powders from aluminum nitrate and glucose

    Institute of Scientific and Technical Information of China (English)

    秦明礼; 曲选辉; 林健凉; 肖平安; 汤春峰; 祝宝军; 雷长明

    2003-01-01

    AlN powders were synthesized by carbothermal reduction method from aluminum nitrate and glucose.The effect of urea on the preparation and nitridation of the precursors was studied. It is found that urea can affectthe morphology and composition of the precursor as well as the nitridation process. During the nitridation process ofthe precursor prepared without urea, α-A12 O3 and A1ON are detected and a high temperature(1600 ℃ ) is needed fora complete conversion. While for the precursor prepared with urea, a complete conversion is got at a relatively lowtemperature(1 400 ℃ ) and AlN is synthesized directly from γ-Al2 O3, with no sign of the formation of α-Al2 O3 andAlON. AlN powders synthesized from the precursor prepared without urea agglomerate badly, while the powderssynthesized from the precursor prepared with urea are soft aggregates of fine particle, which can be easily dispersed.

  16. The influence of interfaces and water uptake on the dielectric response of epoxy-cubic boron nitride composites

    NARCIS (Netherlands)

    Tsekmes, I.A.; Morshuis, P.H.F.; Smit, J.J.; Kochetov, R.

    2015-01-01

    In this study, epoxy-cubic boron nitride composites are fabricated, and their dielectric response is investigated. They exhibit the same trend as epoxy composites reinforced with other filler types. Thus, at low filler concentrations, they exhibit a lower relative permittivity than neat epoxy. As

  17. Spotting 2D atomic layers on aluminum nitride thin films.

    Science.gov (United States)

    Chandrasekar, Hareesh; Bharadwaj B, Krishna; Vaidyuala, Kranthi Kumar; Suran, Swathi; Bhat, Navakanta; Varma, Manoj; Srinivasan Raghavan

    2015-10-23

    Substrates for 2D materials are important for tailoring their fundamental properties and realizing device applications. Aluminum nitride (AIN) films on silicon are promising large-area substrates for such devices in view of their high surface phonon energies and reasonably large dielectric constants. In this paper epitaxial layers of AlN on 2″ Si wafers have been investigated as a necessary first step to realize devices from exfoliated or transferred atomic layers. Significant thickness dependent contrast enhancements are both predicted and observed for monolayers of graphene and MoS2 on AlN films as compared to the conventional SiO2 films on silicon, with calculated contrast values approaching 100% for graphene on AlN as compared to 8% for SiO2 at normal incidences. Quantitative estimates of experimentally measured contrast using reflectance spectroscopy show very good agreement with calculated values. Transistors of monolayer graphene on AlN films are demonstrated, indicating the feasibility of complete device fabrication on the identified layers.

  18. A review: aluminum nitride MEMS contour-mode resonator

    Science.gov (United States)

    Yunhong, Hou; Meng, Zhang; Guowei, Han; Chaowei, Si; Yongmei, Zhao; Jin, Ning

    2016-10-01

    Over the past several decades, the technology of micro-electromechanical system (MEMS) has advanced. A clear need of miniaturization and integration of electronics components has had new solutions for the next generation of wireless communications. The aluminum nitride (AlN) MEMS contour-mode resonator (CMR) has emerged and become promising and competitive due to the advantages of the small size, high quality factor and frequency, low resistance, compatibility with integrated circuit (IC) technology, and the ability of integrating multi-frequency devices on a single chip. In this article, a comprehensive review of AlN MEMS CMR technology will be presented, including its basic working principle, main structures, fabrication processes, and methods of performance optimization. Among these, the deposition and etching process of the AlN film will be specially emphasized and recent advances in various performance optimization methods of the CMR will be given through specific examples which are mainly focused on temperature compensation and reducing anchor losses. This review will conclude with an assessment of the challenges and future trends of the CMR. Project supported by National Natural Science Foundation (Nos. 61274001, 61234007, 61504130), the Nurturing and Development Special Projects of Beijing Science and Technology Innovation Base's Financial Support (No. Z131103002813070), and the National Defense Science and Technology Innovation Fund of CAS (No. CXJJ-14-M32).

  19. Surface modification of piezoelectric aluminum nitride with functionalizable organosilane adlayers

    Science.gov (United States)

    Chan, Edmund; Jackson, Nathan; Mathewson, Alan; Galvin, Paul; Alamin Dow, Ali B.; Kherani, Nazir P.; Blaszykowski, Christophe; Thompson, Michael

    2013-10-01

    The world of biosensors is expanding at a rapid pace with an ever-increasing demand for more sensitive miniaturized devices. Acoustic wave biosensors are not spared from this trend. In this domain, the search for enhanced sensitivity is increasingly oriented toward the rational design of new piezoelectric materials with superior properties to substitute for prevalent quartz. With respect to surface chemistry, construction of the biorecognition element, more often than not, requires the use of bifunctional molecules that can spontaneously assemble on the substrate and form organic surfaces readily biofunctionalizable in a subsequent, ideally single step. In this context, we present herein the surface modification of aluminum nitride (AlN) with alkyltrichlorosilane cross-linking molecules bearing a functionalizable benzenethiosulfonate moiety. This latter feature is next demonstrated through the straightforward, preactivation-free immobilization of thiolated biotin probes. To date, AlN has only received little attention in the field of piezoelectric biosensors despite its many attractive properties and the perspective to operate devices at ultra-high frequencies (GHz) with unprecedented sensitivity. To our knowledge, this work describes one of the first examples of direct surface derivatization of AlN with bifunctional trichlorosilane molecules. It also constitutes a first step toward the development of electrodeless GHz piezoelectric biosensing platforms based on AlN and trichlorosilane surface chemistry.

  20. Continuous-wave Raman Lasing in Aluminum Nitride Microresonators

    CERN Document Server

    Liu, Xianwen; Xiong, Bing; Wang, Lai; Wang, Jian; Han, Yanjun; Hao, Zhibiao; Li, Hongtao; Luo, Yi; Yan, Jianchang; Wei, Tongbo; Zhang, Yun; Wang, Junxi

    2016-01-01

    We report the first investigation on continuous-wave Raman lasing in high-quality-factor aluminum nitride (AlN) microring resonators. Although wurtzite AlN is known to exhibit six Raman-active phonons, single-mode Raman lasing with low threshold and high slope efficiency is demonstrated. Selective excitation of A$_1^\\mathrm{TO}$ and E$_2^\\mathrm{high}$ phonons with Raman shifts of $\\sim$612 and 660 cm$^{-1}$ is observed by adjusting the polarization of the pump light. A theoretical analysis of Raman scattering efficiency within ${c}$-plane (0001) of AlN is carried out to help account for the observed lasing behavior. Bidirectional lasing is experimentally confirmed as a result of symmetric Raman gain in micro-scale waveguides. Furthermore, second-order Raman lasing with unparalleled output power of $\\sim$11.3 mW is obtained, which offers the capability to yield higher order Raman lasers for mid-infrared applications.

  1. Vibrational and Raman Spectroscopic Study of Cubic Boron Nitride Under Pressure Using Density Functional Theory

    Science.gov (United States)

    Pillai, Sharad Babu; Mankad, Venu; Jha, Prafulla K.

    2017-08-01

    Pressure-dependent mechanical, vibrational and Raman spectroscopic study of the cubic boron nitride in context of recent experimental Raman spectroscopic has been performed using the ab initio calculations based on density functional theory. Detailed analysis of the pressure-dependent mechanical and phonon properties shows that the pressure significantly affects the elastic constants and phonon frequencies. There is a systematic variation of elastic properties with pressure while a polynomial expression is used to fit the pressure dependence of the Raman shift. The longitudinal optical-transverse optical (LO-TO) splitting reduces with pressure, and the intensity of both LO and TO peaks start diminishing after 750 GPa. The phonon dispersion curves up to 1000 GPa indicate its dynamical stability. The lower slope of frequency versus pressure for the LO and TO modes at higher pressures suggests its use for pressure calibration at higher pressures.

  2. The electrical properties of sulfur-implanted cubic boron nitride thin films

    Institute of Scientific and Technical Information of China (English)

    Deng Jin-Xiang; Qin Yang; Kong Le; Yang Xue-Liang; Li Ting; Zhao Wei-Ping; Yang Ping

    2012-01-01

    Cubic boron nitride (c-BN) thin films are deposited on p-type Si wafers using radio frequency (RF) sputtering and then doped by implanting S ions.The implantation energy of the ions is 19 keV,and the implantation dose is between 1015 ions/cm2 and 1016 ions/cm2.The doped c-BN thin films are then annealed at a temperature between 400 ℃ and 800 ℃.The results show that the surface resistivity of doped and annealed c-BN thin films is lowered by two to three orders,and the activation energy of c-BN thin films is 0.18 eV.

  3. Growth of ternary and quaternary cubic III-nitrides on 3C-SiC substrates

    Science.gov (United States)

    Schörmann, J.; Potthast, S.; Schnietz, M.; Li, S. F.; As, D. J.; Lischka, K.

    2006-06-01

    Cubic GaN, AlxGa1-xN/GaN multiple quantum wells and quaternary AlxGayIn1-x-yN layers were grown by plasma assisted molecular beam epitaxy on 3C-SiC substrates. Using the intensity of a reflected high energy electron beam as a probe optimum growth conditions of c-III nitrides were found, when a 1 monolayer Ga coverage is formed at the growing surface. Clear RHEED oscillations during the initial growth of AlxGa1-xN/GaN quantum wells were observed. X-ray diffraction measurements of these quantum well structures show clear satellite peaks indicating smooth interfaces. Growth of quaternary AlxGayIn1-x-yN lattice matched to GaN were demonstrated.

  4. Molecular dynamics simulation of nano-indentation of (111) cubic boron nitride with optimized Tersoff potential

    Science.gov (United States)

    Zhao, Yinbo; Peng, Xianghe; Fu, Tao; Huang, Cheng; Feng, Chao; Yin, Deqiang; Wang, Zhongchang

    2016-09-01

    We conduct molecular dynamics simulation of nanoindentation on (111) surface of cubic boron nitride and find that shuffle-set dislocations slip along direction on {111} plane at the initial stage of the indentation. The shuffle-set dislocations are then found to meet together, forming surfaces of a tetrahedron. We also find that the surfaces are stacking-fault zones, which intersect with each other, forming edges of stair-rod dislocations along direction. Moreover, we also calculate the generalized stacking fault (GSF) energies along various gliding directions on several planes and find that the GSF energies of the {111} and {111} systems are relatively smaller, indicating that dislocations slip more easily along and directions on the {111} plane.

  5. Aluminum nitride bulk crystal growth in a resistively heated reactor

    Science.gov (United States)

    Dalmau, Rafael Federico

    A resistively heated reactor capable of temperatures in excess of 2300°C was used to grow aluminum nitride (AlN) bulk single crystals from an AlN powder source by physical vapor transport (PVT) in nitrogen atmosphere. AlN crystals were grown at elevated temperatures by two different methods. Self-seeded crystals were obtained by spontaneous nucleation on the crucible walls, while seeded growth was performed on singular and vicinal (0001) surfaces of silicon carbide (SiC) seeds. During self-seeded growth experiments a variety of crucible materials, such as boron nitride, tungsten, tantalum, rhenium, tantalum nitride, and tantalum carbide, were evaluated. These studies showed that the morphology of crystals grown by spontaneous nucleation strongly depends on the growth temperature and contamination in the reactor. Crucible selection had a profound effect on contamination in the crystal growth environment, influencing nucleation, coalescence, and crystal morphology. In terms of high-temperature stability and compatibility with the growth process, the best results for AlN crystal growth were obtained in crucibles made of sintered tantalum carbide or tantalum nitride. In addition, contamination from the commercially purchased AlN powder source was reduced by presintering the powder prior to growth, which resulted in a drastic reduction of nearly all impurities. Spontaneously grown single crystals up to 15 mm in size were characterized by x-ray diffraction, x-ray topography, glow discharge mass spectrometry, and secondary ion mass spectrometry. Average dislocation densities were on the order of 103 cm -3, with extended areas virtually free of dislocations. High resolution rocking curves routinely showed peak widths as narrow as 7 arcsec, indicating a high degree of crystalline perfection. Low-temperature partially polarized optical reflectance measurements were used to calculate the crystal-field splitting parameter of AlN, Deltacr = -230 meV, and a low-temperature (1

  6. Microstructure and spectroscopy studies on cubic boron nitride synthesized under high-pressure conditions

    CERN Document Server

    Nistor, L C; Dinca, G; Georgeoni, P; Landuyt, J V; Manfredotti, C; Vittone, E

    2002-01-01

    High-resolution electron microscopy (HREM) studies of the microstructure and specific defects in hexagonal boron nitride (h-BN) precursors and cubic boron nitride (c-BN) crystals made under high-pressure high-temperature conditions revealed the presence of half-nanotubes at the edges of the h-BN particles. Their sp sup 3 bonding tendency could strongly influence the nucleation rates of c-BN. The atomic resolution at extended dislocations was insufficient to allow us to determine the stacking fault energy in the c-BN crystals. Its mean value of 191 pm, 15 mJ m sup - sup 2 is of the same order of magnitude as that of diamond. High-frequency (94 GHz) electron paramagnetic resonance studies on c-BN single crystals have produced new data on the D1 centres associated with the boron species. Ion-beam-induced luminescence measurements have indicated that c-BN is a very interesting luminescent material, which is characterized by four luminescence bands and exhibits a better resistance to ionizing radiation than CVD di...

  7. Growth-Parameter Spaces and Optical Properties of Cubic Boron Nitride Films on Si(001)

    Institute of Scientific and Technical Information of China (English)

    FAN Ya-Ming; ZHANG Xing-Wang; YOU Jing-Bi; YING Jie; TAN Hai-Ren; CHEN Nuo-Fu

    2009-01-01

    Cubic boron nitride (c-BN) films were deposited on Si(O01) substrates in an ion beam assisted deposition (IBAD)system under various conditions, and the growth parameter spaces and optical properties of c-BN films have been investigated systematically. The results indicate that suitable ion bombardment is necessary for the growth of c-BN films, and a well defined parameter space can be established by using the P/a-parameter. The refractive index of BN films keeps a constant of 1.8 for the c-BN content lower than 50%, while for c-BN films with higher cubic phase the refractive index increases with the c-BN content from 1.8 at χc = 50% to 2.1 at χc = 90%.Furthermore, the relationship between n and p for BN films can be described by the Anderzon-Schreiber equation,and the overlap field parameter γ is determined to be 2.05.

  8. Low temperature aluminum nitride thin films for sensory applications

    Science.gov (United States)

    Yarar, E.; Hrkac, V.; Zamponi, C.; Piorra, A.; Kienle, L.; Quandt, E.

    2016-07-01

    A low-temperature sputter deposition process for the synthesis of aluminum nitride (AlN) thin films that is attractive for applications with a limited temperature budget is presented. Influence of the reactive gas concentration, plasma treatment of the nucleation surface and film thickness on the microstructural, piezoelectric and dielectric properties of AlN is investigated. An improved crystal quality with respect to the increased film thickness was observed; where full width at half maximum (FWHM) of the AlN films decreased from 2.88 ± 0.16° down to 1.25 ± 0.07° and the effective longitudinal piezoelectric coefficient (d33,f) increased from 2.30 ± 0.32 pm/V up to 5.57 ± 0.34 pm/V for film thicknesses in the range of 30 nm to 2 μm. Dielectric loss angle (tan δ) decreased from 0.626% ± 0.005% to 0.025% ± 0.011% for the same thickness range. The average relative permittivity (ɛr) was calculated as 10.4 ± 0.05. An almost constant transversal piezoelectric coefficient (|e31,f|) of 1.39 ± 0.01 C/m2 was measured for samples in the range of 0.5 μm to 2 μm. Transmission electron microscopy (TEM) investigations performed on thin (100 nm) and thick (1.6 μm) films revealed an (002) oriented AlN nucleation and growth starting directly from the AlN-Pt interface independent of the film thickness and exhibit comparable quality with the state-of-the-art AlN thin films sputtered at much higher substrate temperatures.

  9. Poly-crystalline thin-film by aluminum induced crystallization on aluminum nitride substrate

    Science.gov (United States)

    Bhopal, Muhammad Fahad; Lee, Doo Won; Lee, Soo Hong

    2016-09-01

    Thin-film polycrystalline silicon ( pc-Si) on foreign (non-silicon) substrates has been researched by various research groups for the production of photovoltaic cells. High quality pc-Si deposition on foreign substrates with superior optical properties is considered to be the main hurdle in cell fabrication. Metal induced crystallization (MIC) is one of the renowned techniques used to produce this quality of material. In the current study, an aluminum induced crystallization (AIC) method was adopted to produce pc-Si thin-film on aluminum nitride (AlN) substrate by a seed layer approach. Aluminum and a-Si layer were deposited using an e-beam evaporator. Various annealing conditions were used in order to investigate the AIC grown pc-Si seed layers for process optimization. The effect of thermal annealing on grain size, defects preferentially crystallographic orientation of the grains were analyzed. Surface morphology was studied using an optical microscope. Poly-silicon film with a crystallinity fraction between 95-100% and an FWHM between 5-6 cm-1 is achievable at low temperatures and for short time intervals. A grain size of about 10 micron can be obtained at a low deposition rate on an AIN substrate. Similarly, Focused ion beam (FIB) also showed that at 425 °C sample B and at 400 °C sample A were fully crystallized. The crystalline quality of pc-Si was evaluated using μ-Raman spectroscopy as a function of annealed conditions and Grazing incidence X-ray diffraction (GIXRD) was used to determine the phase direction of the pc-Si layer. The current study implicates that a poly-silicon layer with good crystallographic orientation and crystallinity fraction is achievable on AIN substrate at low temperatures and short time frames.

  10. Synthesis of Aluminum-Aluminum Nitride Nanocomposites by a Gas-Liquid Reaction II. Microstructure and Mechanical Properties

    Science.gov (United States)

    Borgonovo, Cecilia; Makhlouf, Makhlouf M.

    2016-04-01

    In situ fabrication of the reinforcing particles in the metal matrix is an answer to many of the challenges encountered in manufacturing aluminum matrix nanocomposites. In this method, the nanoparticles are formed directly within the melt by means of a chemical reaction between a specially designed aluminum alloy and a gas. In this publication, we describe a process for synthesizing aluminum-aluminum nitride nanocomposites by reacting a nitrogen-containing gas with a molten aluminum-lithium alloy. We quantify the effect of the process parameters on the average particle size and particle distribution, as well as on the tendency of the particles to cluster in the alloy matrix, is quantified. Also in this publication, we present the measured room temperature and elevated temperature tensile properties of the nanocomposite material as well as its measured room temperature impact toughness.

  11. Cavity piezomechanical strong coupling and frequency conversion on an aluminum nitride chip

    CERN Document Server

    Zou, Chang-Ling; Jiang, Liang; Tang, Hong X

    2016-01-01

    Schemes to achieve strong coupling between mechanical modes of aluminum nitride microstructures and microwave cavity modes due to the piezoelectric effect are proposed. We show that the strong coupling regime is feasible for an on-chip aluminum nitride device that is either enclosed by a three-dimensional microwave cavity or integrated with a superconducting coplanar resonator. Combining with optomechanics, the piezomechanical strong coupling permits coherent conversion between microwave and optical modes with high efficiency. Hence, the piezomechanical system will be an efficient transducer for applications in hybrid quantum systems.

  12. Thermo-radiative and optical properties of a cutting tool based on polycrystalline cubic boron nitride (PCBN)

    Science.gov (United States)

    González de Arrieta, I.; Echániz, T.; Pérez-Sáez, R. B.; Tello, M. J.

    2016-04-01

    The normal spectral emissivity of a cutting tool based on polycrystalline cubic boron nitride (PCBN) between 400 °C and 1000 °C has been measured. Its shape shows significant differences with respect to that of pure cubic boron nitride (c-BN). Therefore, while the reflectance spectrum of pure c-BN can be fitted to a Lorentz model for linear dielectrics, the reflectance spectrum of the cutting tool (calculated from the emissivity using Kirchhoff’s laws) requires a combination of a four-parameter Kurosawa model with a double-damping Drude one. A detailed study of the dependence of the emissivity spectrum with temperature is also performed. The experimental data of this paper is required for accurate temperature measurements with radiation thermometers in machining processes.

  13. Ab initio self-consistent calculations of the Compton profiles and polarizabilities of diamond and cubic boron nitride

    CERN Document Server

    Ayma, D; Lichanot, A

    1998-01-01

    Compton profiles, polarizabilities and related functions of diamond and cubic boron nitride have been investigated within the Hartree-Fock approximation and the density functional theory, calculated within the local density approximation and generalized gradient approximation, but without any explicit correlation correction for the Compton profiles. The correlation part already included in the standard uncorrected density functional theory is deduced from the comparison of the two types of calculation. The Compton profile and reciprocal-form-factor anisotropies, polarizability, dielectric constant and energy loss function of the two compounds are compared at the same level of accuracy. These properties are very close in spite of the rather different chemical bonds due to the charge transfer occurring in cubic boron nitride and gaps. (author)

  14. Measurement of the linear electro-optic tensor of cubic boron nitride single crystals

    Institute of Scientific and Technical Information of China (English)

    Shuang Wang; Gang Jia; Xiuhuan Liu; Shipeng Chi; Jingcheng Zhu; Yanjun Gao; Pingwei Zhou; Zhanguo Chen

    2012-01-01

    The transverse electro-optic (EO) modulation system is built based on cubic boron nitride (cBN) single crystals unintentionally doped and synthesized at a high pressure and high temperature.The photoelectric output of the system includes two parts that can be measured respectively and the value of elements in the linear EO tensor of the cBN crystal can be obtained.This method does not need to measure the absolute light intensity.All of the surfaces of the tiny cBN crystals whose hardness is next to the hardest diamonds are {111} planes.The rectangular parallelepiped cBN samples are obtained by cleaving along {110} planes and subsequently grinding and polishing {112} planes of the tiny octahedral cBN flakes.Three identical non-zero elements of the EO tensor of the cBN crystal are measured via two sample configurations,and the measured results are very close,about 3.68 and 3.95 pm/V,respectively,which are larger than the linear EO coefficients of the general Ⅲ-Ⅴ compounds.

  15. Picosecond pulsed laser processing of polycrystalline diamond and cubic boron nitride composite materials

    Science.gov (United States)

    Warhanek, Maximilian G.; Pfaff, Josquin; Meier, Linus; Walter, Christian; Wegener, Konrad

    2016-03-01

    Capabilities and advantages of laser ablation processes utilizing ultrashort pulses have been demonstrated in various applications of scientific and industrial nature. Of particular interest are applications that require high geometrical accuracy, excellent surface integrity and thus tolerate only a negligible heat-affected zone in the processed area. In this context, this work presents a detailed study of the ablation characteristics of common ultrahard composite materials utilized in the cutting tool industry, namely polycrystalline diamond (PCD) and polycrystalline cubic boron nitride composite (PCBN). Due to the high hardness of these materials, conventional mechanical processing is time consuming and costly. Herein, laser ablation is an appealing solution, since no process forces and no wear have to be taken into consideration. However, an industrially viable process requires a detailed understanding of the ablation characteristics of each material. Therefore, the influence of various process parameters on material removal and processing quality at 10 ps pulse duration are investigated for several PCD and PCBN grades. The main focus of this study examines the effect of different laser energy input distributions, such as pulse frequency and burst pulses, on the processing conditions in deep cutting kerfs and the resulting processing speed. Based on these results, recommendations for efficient processing of such materials are derived.

  16. Research on the piezoelectric response of cubic and hexagonal boron nitride films

    Institute of Scientific and Technical Information of China (English)

    CHEN Xi-ming; SUN Lian-jie; YANG Bao-he; GUO Yan; WU Xiao-guo

    2012-01-01

    Boron nitride (BN) films for high-frequency surface acoustic wave (SAW) devices are deposited on Ti/A(l)/Si(111) wafers byradio frequency (RF) magnetron sputtering.The structure of BN films is investigated by Fourier transform infrared (FTIR)spectroscopy and X-ray diffraction (XRD) spectra,and the surface morphology and piezoelectric properties of BN films are characterized by atomic force microscopy (AFM).The results show that when the flow ratio of nitrogen and argon is 2∶18,the cubic BN (c-BN) film is deposited with high purity and c-axis orientation,and when the flow ratio of nitrogen and argon is 4∶20,the hexagonal BN (h-BN) film is deposited with high c-axis orientation.Both particles are uniform and compact,and the roughnesses are 1.5 nm and 2.29 nm,respectively.The h-BN films have better piezoelectric response and distribution than the c-BN films.

  17. Investigation on cubic boron nitride crystals doped with Si by high temperature thermal diffusion

    Science.gov (United States)

    Li, Xinlu; Feng, Shuang; Liu, Xiuhuan; Hou, Lixin; Gao, Yanjun; Wang, Qi; Liu, Nian; Zhang, Hai; Chen, Zhanguo; Zheng, Jie; Jia, Gang

    2014-07-01

    The method of high temperature thermal diffusion was successfully applied for doping Si impurities into cubic boron nitride (cBN) crystals. X-ray photoelectron spectra (XPS) and the current-voltage (I-V) characteristics at different temperatures were respectively used for analyzing the chemical states and the activation energy of Si impurity in cBN. According to the XPS results, Si impurities mainly replace B atoms bonding with the adjacent N atoms and become donors in cBN. Without surface cleaning, there are a lot of C and O contaminations on the surface of cBN, so a small quantity of C-Si and Si-N-O bonds also exist at the surface of cBN. Most Si impurities distribute in the shallow layer underneath the surface of cBN. Based on the electric measurement, Si impurities in cBN usually have the activation energy beyond 0.4 eV, and they can only be slightly ionized at room temperature, therefore the resistivity of Si-doped cBN is still high, and the space charge limited current becomes the main conductive mechanism in cBN. However, the conductivity of Si-doped cBN can rapidly increase with the temperature. In addition, the activation energy and the concentration of Si impurity in cBN can be affected by the temperature and the time of thermal diffusion, which needs to be verified further.

  18. Molecular Dynamics Study of Cubic Boron Nitride Nanoparticles: Decomposition with Phase Segregation during Melting.

    Science.gov (United States)

    Lee, Hsiao-Fang; Esfarjani, Keivan; Dong, Zhizhong; Xiong, Gang; Pelegri, Assimina A; Tse, Stephen D

    2016-11-22

    The relative stability and melting of cubic boron nitride (c-BN) nanoparticles of varying shapes and sizes are studied using classical molecular dynamics (MD) simulation. Focusing on the melting of octahedral c-BN nanoparticles, which consist solely of the most stable {111} facets, decomposition is observed to occur during melting, along with the formation of phase segregated boron clusters inside the c-BN nanoparticles, concurrent with vaporization of surface nitrogen atoms. To assess this MD prediction, a laser-heating experiment of c-BN powders is conducted, manifesting boron clusters for the post-treated powders. A general analysis of the geometrical and surface dependence of the nanoparticle ground-state energy using a Stillinger-Weber potential determines the relative stability of cube-shaped, octahedral, cuboctahedral, and truncated-octahedral c-BN nanoparticles. This stability is further examined using transient MD simulations of the melting behavior of the differently shaped nanoparticles, providing insights and revealing the key roles played by corner and edge initiated disorder as well as surface reconstruction from {100} to the more stable {111} facets in the melting process. Finally, the size dependence of the melting point of octahedral c-BN nanoparticles is investigated, showing the well-known qualitative trend of depression of melting temperature with decreasing size, albeit with different quantitative behavior from that predicted by existing analytical models.

  19. In situ infrared spectroscopic study of cubic boron nitride thin film delamination

    Institute of Scientific and Technical Information of China (English)

    Yang Hang-Sheng; Zhang Jian-Ying; Nie An-Min; Zhang Xiao-Bin

    2008-01-01

    This paper investigates the procedure of cubic boron nitride(cBN)thin film delamination by Fourier-transform infrared(IR)spectroscopy.It finds that the apparent IR absorption peak area near 1380 cm-1 and 1073 cm-1 attributed to the B-N stretching vibration of sp2-bonded BN and the transverse optical phonon of cBN,respectively,increased up to 195% and 175% of the original peak area after film delamination induced compressive stress relaxation.The increase of IR absorption of sp2-bonded BN is found to be non-linear and hysteretic to film delamination,which suggests that the relaxation of the turbostratic BN(tBN)layer from the compressed condition is also hysteretic to film delamination.Moreover,cross-sectional transmission electron microscopic observations revealed that cBN film delamination is possible from near the aBN(amorphons BN)/tBN interface at least for films prepared by plasma-enhanced chemical vapour deposition.

  20. Growth of ternary and quaternary cubic III-nitrides on 3C-SiC substrates

    Energy Technology Data Exchange (ETDEWEB)

    Schoermann, J.; Potthast, S.; Schnietz, M.; Li, S.F.; As, D.J.; Lischka, K. [Department of Physics, University of Paderborn, Warburger Str. 100, 33095 Paderborn (Germany)

    2006-06-15

    Cubic GaN, Al{sub x}Ga{sub 1-x}N/GaN multiple quantum wells and quaternary Al{sub x}Ga{sub y}In{sub 1-x-y}N layers were grown by plasma assisted molecular beam epitaxy on 3C-SiC substrates. Using the intensity of a reflected high energy electron beam as a probe optimum growth conditions of c-III nitrides were found, when a 1 monolayer Ga coverage is formed at the growing surface. Clear RHEED oscillations during the initial growth of Al{sub x}Ga{sub 1-x}N/GaN quantum wells were observed. X-ray diffraction measurements of these quantum well structures show clear satellite peaks indicating smooth interfaces. Growth of quaternary Al{sub x}Ga{sub y}In{sub 1-x-y}N lattice matched to GaN were demonstrated. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  1. Effect of contact metals on the piezoelectric properties of aluminum nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Harman, J.; Kabulski, A.; Pagán, V. R.; Famouri, P.; Kasarla, K. R.; Rodak, L. E.; Peter Hensel, J.; Korakakis, D.

    2008-01-01

    The converse piezoelectric response of aluminum nitride evaluated using standard metal insulator semiconductor structures has been found to exhibit a linear dependence on the work function of the metal used as the top electrode. The apparent d33 of the 150–1100 nm films also depends on the dc bias applied to the samples.

  2. Effect of contact metals on the piezoelectric properties of aluminum nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Harman, J.P.; Kabulski, A. (West Virginia U., Morgantown, WV); Pagan, V.R. (West Virginia U., Morgantown, WV); Famouri, K. (West Virginia U., Morgantown, WV); Kasarla, K.R.; Rodak, L.E. (West Virginia U., Morgantown, WV); Hensel, J.P.; Korakakis, D.

    2008-07-01

    The converse piezoelectric response of aluminum nitride evaluated using standard metal insulator semiconductor structures has been found to exhibit a linear dependence on the work function of the metal used as the top electrode. The apparent d33 of the 150–1100 nm films also depends on the dc bias applied to the samples.

  3. Characteristics of plate-like and color-zoning cubic boron nitride crystals

    Energy Technology Data Exchange (ETDEWEB)

    Feng, Shuang [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012 (China); Hou, Lixin, E-mail: houlixin_2000@126.com [College of Information and Technology, Jilin Agricultural University, 2888 Xincheng Street, Changchun 130118 (China); Liu, Xiuhuan [College of Telecommunication Engineering, Jilin University, 5372 Nanhu Road, Changchun 130012 (China); Gao, Yanjun; Li, Xinlu; Wang, Qi [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012 (China); Chen, Zhanguo, E-mail: czg@jlu.edu.cn [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012 (China); Jia, Gang; Zheng, Jie [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012 (China)

    2013-11-15

    The polarities of a kind of plate-like and color-zoning cubic boron nitride (cBN) crystal were extensively investigated by microscopy, chemical etching, XPS, Raman scattering, and current–voltage measurements. The {1 1 1}B faces and {1"¯1"¯1"¯}N faces of the cBN samples can be easily distinguished by optical microscope as there are a lot of defects incorporate in {1"¯1"¯1"¯}N sectors serving as the color centers, while the {1 1 1}B sectors have less defects and are nearly colorless. Both XPS and Raman spectra also revealed the uneven distributions of N vacancies and substitutional impurities in cBN crystals. The determination of {1 1 1}B faces and {1"¯1"¯1"¯}N faces can also be verified by the results of the chemical etching because the {1"¯1"¯1"¯}N faces have much faster etch rates than the {1 1 1}B faces. According to XPS, the {1 1 1}B faces have more C and O contaminations than the {1"¯1"¯1"¯}N faces, however the {1"¯1"¯1"¯}N faces have larger atomic ratio of B:N after surface cleaning by Ar{sup +} sputtering. In the Raman spectra of the {1"¯1"¯1"¯}N sectors of cBN, several small broad infrared-active phonon bands emerge nearby TO and LO modes because of the disorder-activated Raman scattering. As for the {1 1 1}B sectors, this phenomenon disappears. In addition, the {1 1 1}B faces have much smaller leakage current than the {1"¯1"¯1"¯}N faces, which indicates that the {1 1 1}B sectors have higher crystalline quality.

  4. Process for the production of metal nitride sintered bodies and resultant silicon nitride and aluminum nitride sintered bodies

    Science.gov (United States)

    Yajima, S.; Omori, M.; Hayashi, J.; Kayano, H.; Hamano, M.

    1983-01-01

    A process for the manufacture of metal nitride sintered bodies, in particular, a process in which a mixture of metal nitrite powders is shaped and heated together with a binding agent is described. Of the metal nitrides Si3N4 and AIN were used especially frequently because of their excellent properties at high temperatures. The goal is to produce a process for metal nitride sintered bodies with high strength, high corrosion resistance, thermal shock resistance, thermal shock resistance, and avoidance of previously known faults.

  5. Synthesis of Aluminum-Aluminum Nitride Nanocomposites by Gas-Liquid Reactions I. Thermodynamic and Kinetic Considerations

    Science.gov (United States)

    Borgonovo, Cecilia; Makhlouf, Makhlouf M.

    2016-10-01

    In-situ fabrication of the reinforcing particles directly in the metal matrix is an answer to many of the challenges encountered in manufacturing metal matrix nanocomposite materials. In this method, the nanosized particles are formed directly within the melt by means of a chemical reaction between a specially designed metallic alloy and a reactive gas. The thermodynamic and kinetic characteristics of this chemical reaction dictate the particle size and distribution in the matrix alloy, as well as the nature of the particle/matrix interface, and consequently, they govern many of the material's mechanical and physical properties. This article focuses on aluminum-aluminum-nitride nanocomposite materials that are synthesized by injecting a nitrogen-bearing gas into a molten aluminum alloy. The thermodynamic and kinetic aspects of the process are modeled, and the detrimental role of oxygen is elucidated.

  6. Researching the Aluminum Nitride Etching Process for Application in MEMS Resonators

    Directory of Open Access Journals (Sweden)

    Jian Yang

    2015-02-01

    Full Text Available We investigated the aluminum nitride etching process for MEMS resonators. The process is based on Cl2/BCl3/Ar gas chemistry in inductively coupled plasma system. The hard mask of SiO2 is used. The etching rate, selectivity, sidewall angle, bottom surface roughness and microtrench are studied as a function of the gas flow rate, bias power and chamber pressure. The relations among those parameters are reported and theoretical analyses are given. By optimizing the etching parameters, the bottom surface roughness of 1.98 nm and the sidewall angle of 83° were achieved. This etching process can meet the manufacturing requirements of aluminum nitride MEMS resonator.

  7. Adhesion enhancement of titanium nitride coating on aluminum casting alloy by intrinsic microstructures

    Science.gov (United States)

    Nguyen, Chuong L.; Preston, Andrew; Tran, Anh T. T.; Dickinson, Michelle; Metson, James B.

    2016-07-01

    Aluminum casting alloys have excellent castability, high strength and good corrosion resistance. However, the presence of silicon in these alloys prevents surface finishing with conventional methods such as anodizing. Hard coating with titanium nitride can provide wear and corrosion resistances, as well as the aesthetic finish. A critical factor for a durable hard coating is its bonding with the underlying substrate. In this study, a titanium nitride layer was coated on LM25 casting alloy and a reference high purity aluminum substrate using Ion Assisted Deposition. Characterization of the coating and the critical interface was carried out by a range of complementing techniques, including SIMS, XPS, TEM, SEM/EDS and nano-indentation. It was observed that the coating on the aluminum alloy is stronger compared to that on the pure aluminum counterpart. Silicon particles in the alloy offers the reinforcement though mechanical interlocking at microscopic level, even with nano-scale height difference. This reinforcement overcomes the adverse effect caused by surface segregation of magnesium in aluminum casting alloys.

  8. Characteristics of plate-like and color-zoning cubic boron nitride crystals

    Science.gov (United States)

    Feng, Shuang; Hou, Lixin; Liu, Xiuhuan; Gao, Yanjun; Li, Xinlu; Wang, Qi; Chen, Zhanguo; Jia, Gang; Zheng, Jie

    2013-11-01

    The polarities of a kind of plate-like and color-zoning cubic boron nitride (cBN) crystal were extensively investigated by microscopy, chemical etching, XPS, Raman scattering, and current-voltage measurements. The {1 1 1}B faces and {1¯ 1¯ 1¯}N faces of the cBN samples can be easily distinguished by optical microscope as there are a lot of defects incorporate in {1¯ 1¯ 1¯}N sectors serving as the color centers, while the {1 1 1}B sectors have less defects and are nearly colorless. Both XPS and Raman spectra also revealed the uneven distributions of N vacancies and substitutional impurities in cBN crystals. The determination of {1 1 1}B faces and {1¯ 1¯ 1¯}N faces can also be verified by the results of the chemical etching because the {1¯ 1¯ 1¯}N faces have much faster etch rates than the {1 1 1}B faces. According to XPS, the {1 1 1}B faces have more C and O contaminations than the {1¯ 1¯ 1¯}N faces, however the {1¯ 1¯ 1¯}N faces have larger atomic ratio of B:N after surface cleaning by Ar+ sputtering. In the Raman spectra of the {1¯ 1¯ 1¯}N sectors of cBN, several small broad infrared-active phonon bands emerge nearby TO and LO modes because of the disorder-activated Raman scattering. As for the {1 1 1}B sectors, this phenomenon disappears. In addition, the {1 1 1}B faces have much smaller leakage current than the {1¯ 1¯ 1¯}N faces, which indicates that the {1 1 1}B sectors have higher crystalline quality.

  9. Microwave Study of Field-Effect Devices Based on Graphene/Aluminum Nitride/Graphene Structures

    Science.gov (United States)

    Adabi, Mohammad; Lischner, Johannes; Hanham, Stephen M.; Mihai, Andrei P.; Shaforost, Olena; Wang, Rui; Hao, Ling; Petrov, Peter K.; Klein, Norbert

    2017-03-01

    Metallic gate electrodes are often employed to control the conductivity of graphene based field effect devices. The lack of transparency of such electrodes in many optical applications is a key limiting factor. We demonstrate a working concept of a double layer graphene field effect device that utilizes a thin film of sputtered aluminum nitride as dielectric gate material. For this system, we show that the graphene resistance can be modified by a voltage between the two graphene layers. We study how a second gate voltage applied to the silicon back gate modifies the measured microwave transport data at around 8.7 GHz. As confirmed by numerical simulations based on the Boltzmann equation, this system resembles a parallel circuit of two graphene layers with different intrinsic doping levels. The obtained experimental results indicate that the graphene-aluminum nitride-graphene device concept presents a promising technology platform for terahertz- to- optical devices as well as radio-frequency acoustic devices where piezoelectricity in aluminum nitride can also be exploited.

  10. Microwave Study of Field-Effect Devices Based on Graphene/Aluminum Nitride/Graphene Structures.

    Science.gov (United States)

    Adabi, Mohammad; Lischner, Johannes; Hanham, Stephen M; Mihai, Andrei P; Shaforost, Olena; Wang, Rui; Hao, Ling; Petrov, Peter K; Klein, Norbert

    2017-03-09

    Metallic gate electrodes are often employed to control the conductivity of graphene based field effect devices. The lack of transparency of such electrodes in many optical applications is a key limiting factor. We demonstrate a working concept of a double layer graphene field effect device that utilizes a thin film of sputtered aluminum nitride as dielectric gate material. For this system, we show that the graphene resistance can be modified by a voltage between the two graphene layers. We study how a second gate voltage applied to the silicon back gate modifies the measured microwave transport data at around 8.7 GHz. As confirmed by numerical simulations based on the Boltzmann equation, this system resembles a parallel circuit of two graphene layers with different intrinsic doping levels. The obtained experimental results indicate that the graphene-aluminum nitride-graphene device concept presents a promising technology platform for terahertz- to- optical devices as well as radio-frequency acoustic devices where piezoelectricity in aluminum nitride can also be exploited.

  11. Polarity Control and Doping in Aluminum Gallium Nitride

    Science.gov (United States)

    2013-06-01

    seems to go hand in hand with a decrease in resistivity. In other words, a more activated sample shows a more intense ABX transition as well as a...Al0.8Ga0.2N grown on c- oriented AlN single crystal substrates; Physica Status Solidi (c) 9 (3-4); 584-587 (2012). 5 Y. Taniyasu, M. Kasu and T. Makimoto ...emitting diodes; Nature 406 (6798); 865-868 (2000). 21 U. T. Schwarz and M. Kneissl; Nitride emitters go nonpolar; physica status solidi (RRL

  12. Study of aluminum nitride precipitation in Fe- 3%Si steel

    Directory of Open Access Journals (Sweden)

    F.L. Alcântara

    2013-01-01

    Full Text Available For good performance of electrical steels it is necessary a high magnetic induction and a low power loss when submitted to cyclic magnetization. A fine dispersion of precipitates is a key requirement in the manufacturing process of Fe- 3%Si grain oriented electrical steel. In the production of high permeability grain oriented steel precipitate particles of copper and manganese sulphides and aluminium nitride delay normal grain growth during primary recrystallization, causing preferential growth of grains with Goss orientation during secondary recrystallization. The sulphides precipitate during the hot rolling process. The aluminium nitride particles are formed during hot rolling and the hot band annealing process. In this work AlN precipitation during hot deformation of a high permeability grain oriented 3%Si steel is examined. In the study, transfer bar samples were submitted to controlled heating, compression and cooling treatments in order to simulate a reversible hot rolling finishing. The samples were analyzed using the transmission electron microscope (TEM in order to identify the precipitates and characterize size distribution. Precipitate extraction by dissolution method and analyses by inductively coupled plasma optical emission spectrometry (ICP-OES were used to quantify the precipitation. The results allowed to describe the precipitation kinetics by a precipitation-time-temperature (PTT diagram for AlN formation during hot rolling.

  13. Low-volume aluminum and aluminum / titanium nitride bilayer lumped-element kinetic inductance detectors for far-infrared astronomy

    Science.gov (United States)

    Glenn, Jason; Fyhrie, Adalyn; Wheeler, Jordan; Day, Peter K.; Eom, Byeong H.; Leduc, Henry G.

    2016-07-01

    We present the design and characterization of low-volume, lumped-element aluminum kinetic inductance de- tectors for sensitive far-infrared astronomy observations. The lumped-element kinetic inductance detectors are comprised of meandered inductors that serve as radiation absorbers in parallel with interdigitated capacitors, forming high quality factor resonators. Low inductor volumes lead to low noise equivalent powers by raising quasiparticles densities, and hence responsivities, with respect to larger volumes. Low volumes are achieved with thin (20 nm), narrow (150 nm) inductors. The interdigitated capacitor architecture is designed to mitigate two-level system noise by lowering electric fields in the silicon substrate. Resonance frequencies are in the range of 190 to 500 MHz, with measured internal quality factors in excess of 1 x 105. In a prior incarnation, a titanium nitride layer on top of the aluminum served as a protective layer, but complicated the superconducting proper- ties. These results were reported previously. In the current incarnation, the aluminum layer is left bare with no titanium nitride over-layer. The results for these bare aluminum devices include a yield of 88%, frequency responsivity of 109 W-1, and noise equivalent power of 1 x 10-17 W Hz-1/2 for a 350μm array. There is no evidence for 1=f noise down to at least 200 mHz. The sensitivity is currently limited by white noise, very likely from stray light in the testbed; for this detector design, sensitivities limited by generation-recombination noise in a lower-background environment should be several orders of magnitude lower.

  14. Effect of composition of titanium in silver-copper-titanium braze alloy on dissimilar laser brazing of binder-less cubic boron nitride and tungsten carbide

    Science.gov (United States)

    Sechi, Yoshihisa; Nagatsuka, Kimiaki; Nakata, Kazuhiro

    2014-08-01

    Laser brazing with Ti as an active element in silver-copper alloy braze metal has been carried out for binder-less cubic boron nitride and tungsten carbide, using silver-copper- titanium braze alloys with titanium content that varied between 0.28 mass% and 1.68 mass%. Observations of the interface using electron probe microanalysis and scanning acoustic microscopy show that efficient interface adhesion between binder-less cubic boron nitride and the silver-copper-titanium braze alloy was achieved for the braze with a titanium content of 0. 28 mass%.

  15. The Durability of Various Crucible Materials for Aluminum Nitride Crystal growth by Sublimation

    Energy Technology Data Exchange (ETDEWEB)

    Liu,B.; Edgar, J.; Gu, Z.; Zhuang, D.; Raghothamachar, B.; Dudley, M.; Sarua, A.; Kuball, M.; Meyer, H.

    2004-01-01

    Producing high purity aluminum nitride crystals by the sublimation-recondensation technique is difficult due to the inherently reactive crystal growth environment, normally at temperature in excess of 2100 C. The durability of the furnace fixture materials (crucibles, retorts, etc.) at such a high temperature remains a critical problem. In the present study, the suitability of several refractory materials for AlN crystal growth is investigated, including tantalum carbide, niobium carbide, tungsten, graphite, and hot-pressed boron nitride. The thermal and chemical properties and performance of these materials in inert gas, as well as under AlN crystal growth conditions are discussed. TaC and NbC are the most stable crucible materials with very low elemental vapor pressures in the crystal growth system. Compared with refractory material coated graphite crucibles, HPBN crucible is better for AlN self-seeded growth, as crystals tend to nucleate in thin colorless platelets with low dislocation density.

  16. The Adhesion Improvement of Cubic Boron Nitride Film on High Speed Steel Substrate Implanted by Boron Element

    Institute of Scientific and Technical Information of China (English)

    CAI Zhi-hai; ZHANG Ping; TAN Jun

    2005-01-01

    Cubic boron nitride(c-BN) films were deposited on W6Mo5Cr4V2 high speed steel(HSS) substrate implanted with boron ion by RF-magnetron sputtering. The films were analyzed by the bending beam method, scratch test, XPS and AFM. The experimental results show that the implantation of boron atom can reduce the in ternal stress and improve the adhesion strength of the films. The critical load of scratch test rises to 27.45 N, compared to 1.75 N of c-BN film on the unimplanted HSS. The AFM shows that the surface of the c-BN film on the implanted HSS is low in roughness and small in grain size. Then the composition of the boron implanted layer was analyzed by the XPS. And the influence of the boron implanted layer on the internal stress and adhesion strength of c-BN films were investigated.

  17. A study of the influence of cutting parameters on micromilling of steel with cubic boron nitride (CBN) tools

    Science.gov (United States)

    Klocke, Fritz; Quito, Fernando; Arntz, Kristian; Souza, Alexandre

    2009-02-01

    It has been concluded in previous studies that Cubic Boron Nitride (CBN) tools have greater wear resistance and superior tool life than other tool materials used in conventional milling, due to chemically stability at high temperatures, high abrasive wear resistance and high degree of hardness; however no research has been conducted about its performance on micro milling. Burr formation has a direct negative effect on product quality and assembly automation in micro milling, therefore adoption of machining strategies and influencing factors were investigated intending to reduce burr formation. This paper also aims at analyzing the interference of cutting parameters on micro milling with CBN tools, such as the influence of cutting speed and feed per tooth on the surface quality and tool life. These outcomes enable us to know which parameters and strategies must be used to achieve better results when micro milling steel with CBN tools.

  18. Oxidation kinetics of aluminum nitride at different oxidizing atmosphere

    Energy Technology Data Exchange (ETDEWEB)

    Hou Xinmei [Metallurgical and Ecological Engineering School, University of Science and Technology Beijing, Beijing 100083 (China); Chou, K.-C. [Metallurgical and Ecological Engineering School, University of Science and Technology Beijing, Beijing 100083 (China)], E-mail: kcc126@126.com; Zhong Xiangchong [High Temperature Ceramics Institute, Zhengzhou University, Henan Province 450052 (China); Seetharaman, Seshadri [Department of Materials Science and Engineering, Royal Institute of Technology, Stockholm (Sweden)

    2008-10-06

    In the present work, the oxidation kinetics of AlN powder was investigated by using thermogravimetric analysis, X-ray diffraction (XRD) and scanning electron microscopy (SEM). The experiments were carried out both in isothermal as well as non-isothermal modes under two different oxidizing atmospheres. The results showed that the oxidation reaction started at around 1100 K and the rate increased significantly beyond 1273 K forming porous aluminum oxide as the reaction product. The oxidation rate was affected by temperature and oxygen partial pressure. A distinct change in the oxidation mechanism was noticed in the temperature range 1533-1543 K which is attributed to the phase transformation in oxidation product, viz. alumina. Diffusion is the controlling step during the oxidation process. Based on the experimental data, a new model for predicting the oxidation process of AlN powder had been developed, which offered an analytic form expressing the oxidation weight increment as a function of time, temperature and oxygen partial pressure. The application of this new model to this system demonstrated that this model could be used to describe the oxidation behavior of AlN powder.

  19. Experimental investigation on thermal conductivity and viscosity of aluminum nitride nanofluid

    Institute of Scientific and Technical Information of China (English)

    Wei Yu; Huaqing Xie; Yang Li; Lifei Chen

    2011-01-01

    Aluminum nitride nanoparticles (AINs) have been found to be a good additive for enhancing the thermal conductivity of traditional heat exchange fluids. At a volume fraction of 0.1, the thermal conductivity enhancement ratios are 38.71% and 40.2%, respectively, for ethylene glycol and propylene glycol as the base fluids. Temperature does not have much influence on the enhanced thermal conductivity ratios of the nanofluids, though a volume fraction of 5.0% appears to signify a critical concentration for theology:for 5.0vol% for obvious shear-shinning behavior, for both ethylene glycol and propylene glycol.

  20. Fabrication of aluminum nitride and its stability in liquid alkali metals

    Energy Technology Data Exchange (ETDEWEB)

    Natesan, K.; Rink, D.L. [Argonne National Lab., Chicago, IL (United States)

    1995-04-01

    The objective of this task are to (a) evaluate several fabrication procedures for development of aluminum nitride (AlN) coatings on the candidate first-wall structural material V-5wt.%Cr-5wt.%Ti, (b) evaluate the stability of coatings in contact with the structural alloy and liquid Li at temperatures of 200 to 400{degrees}C, (c) measure the electrical resistivity of the coated films after exposure to liquid Li, (d) evaluate the effects of coating defects on electrical resistivity, and (e) establish in-situ repair procedures to maintain adequate electrical insulating properties for the coatings.

  1. Lithographically defined aluminum nitride cross-sectional Lamé mode resonators

    Science.gov (United States)

    Chen, G.; Cassella, C.; Qian, Z.; Hummel, G. E.; Rinaldi, M.

    2017-03-01

    This paper reports on aluminum nitride (AlN) cross-sectional Lamé mode resonators (CLMRs) showing high electromechanical coupling coefficient (kt{2} ) in excess of 4% in a lithographically defined 307 MHz frequency range around 920 MHz. In addition, we report the performance of a CLMR showing a figure of merit (FoM, defined as the product of quality factor, Q, and kt{2} ) in excess of 85. To the best of the authors’ knowledge, such FoM value is the highest reported for AlN resonators using interdigitated metal electrodes (IDTs).

  2. Variation of the intrinsic stress gradient in thin aluminum nitride films

    Science.gov (United States)

    Mehner, H.; Leopold, S.; Hoffmann, M.

    2013-09-01

    The intrinsic stress gradient variation of thin aluminum nitride (AlN) films is the central objective in this paper. For the first time, significant influence parameters on the stress gradient are identified and varied during the deposition process. The process power induced in the plasma and the gas flow ratio of the sputter gases argon and nitrogen are the two major parameters for controlling the stress gradient of deposited AlN films. The controlled avoidance as well as the controlled generation of positive and negative gradients is shown. The stress gradient was investigated by analysis of released one-side clamped cantilever test structures.

  3. Cubic nitrides of the sixth group of transition metals formed by nitrogen ion irradiation during metal condensation

    Energy Technology Data Exchange (ETDEWEB)

    Ensinger, W. [Augsburg Univ. (Germany). Inst. fuer Physik; Kiuchi, M. [Osaka National Research Institute, Midorigaoka 1-8-31, Ikeda, Osaka 563 (Japan)

    1996-10-01

    Nitrogen-containing phases of chromium, molybdenum and tungsten were formed by evaporation of the metal under simultaneous nitrogen ion irradiation. With gradually increasing ion irradiation intensity, chromium forms initially Cr and Cr{sub 2}N phase mixtures, then additionally CrN appears, and at the highest intensities pure CrN films are formed. Molybdenum also forms pure nitride MoN under intense ion bombardment. However, in this case two different crystal structures are found, the stable hexagonal phase and the metastable cubic high-temperature phase. The latter is favoured under intense ion irradiation. In the case of tungsten, even at the highest intensities, only phase mixtures of W and W{sub 2}N were formed. These observed differences can be explained by the low reactivity of these metals towards nitrogen and the low chemical stability of the nitrides, particularly of WN. The metastable high-temperature structure of MoN is formed under the particular conditions of ion bombardment with rapid energy dissipation. (orig.)

  4. Studies on the reliability of ni-gate aluminum gallium nitride / gallium nitride high electron mobility transistors using chemical deprocessing

    Science.gov (United States)

    Whiting, Patrick Guzek

    Aluminum Gallium Nitride / Gallium Nitride High Electron Mobility Transistors are becoming the technology of choice for applications where hundreds of volts need to be applied in a circuit at frequencies in the hundreds of gigahertz, such as microwave communications. However, because these devices are very new, their reliability in the field is not well understood, partly because of the stochastic nature of the defects which form as a result of their operation. Many analytical techniques are not well suited to the analysis of these defects because they sample regions of the device which are either too small or too large for accurate observation. The use of chemical deprocessing in addition to surface-sensitive analysis techniques such as Scanning Electron Microscopy and Scanning Probe Microscopy can be utilized in the analysis of defect formation in devices formed with nickel gates. Hydrofluoric acid is used to etch the passivation nitride which covers the semiconducting layer of the transistor. A metal etch utilizing FeCN/KI is used to etch the ohmic and gate contacts of the device and a long exposure in various solvent solutions is used to remove organic contaminants, exposing the surface of the semiconducting layer for analysis. Deprocessing was used in conjunction with a variety of metrology techniques to analyze three different defects. One of these defects is a nanoscale crack which emanates from metal inclusions formed during alloying of the ohmic contacts of the device prior to use in the field, could impact the yield of production-level manufacturing of these devices. This defect also appears to grow, in some cases, during electrostatic stressing. Another defect, a native oxide at the surface of the semiconducting layer which appears to react in the presence of an electric field, has not been observed before during post-mortem analysis of degraded devices. It could play a major part in the degredation of the gate contact during high-field, off

  5. Low Temperature Reactive Sputtering of Thin Aluminum Nitride Films on Metallic Nanocomposites.

    Science.gov (United States)

    Ramadan, Khaled Sayed Elbadawi; Evoy, Stephane

    2015-01-01

    Piezoelectric aluminum nitride thin films were deposited on aluminum-molybdenum (AlMo) metallic nanocomposites using reactive DC sputtering at room temperature. The effect of sputtering parameters on film properties was assessed. A comparative study between AlN grown on AlMo and pure aluminum showed an equivalent (002) crystallographic texture. The piezoelectric coefficients were measured to be 0.5±0.1 C m(-2) and 0.9±0.1 C m(-2), for AlN deposited on Al/0.32Mo and pure Al, respectively. Films grown onto Al/0.32Mo however featured improved surface roughness. Roughness values were measured to be 1.3nm and 5.4 nm for AlN films grown on AlMo and on Al, respectively. In turn, the dielectric constant was measured to be 8.9±0.7 for AlN deposited on Al/0.32Mo seed layer, and 8.7±0.7 for AlN deposited on aluminum; thus, equivalent within experimental error. Compatibility of this room temperature process with the lift-off patterning of the deposited AlN is also reported.

  6. Effect of variation of silicon nitride passivation layer on electron irradiated aluminum gallium nitride/gallium nitride HEMT structures

    Science.gov (United States)

    Jackson, Helen C.

    Silicon nitride passivation on AlGaNGaN heterojunction devices can improve performance by reducing electron traps at the surface. This research studies the effect of displacement damage caused by 1 MeV electron irradiation as a function of the variation of passivation layer thickness and heterostructure layer variation on AlGaN/GaN HEMTs. The effects of passivation layer thickness are investigated at thicknesses of 0, 20, 50 and 120 nanometers on AlGaNGaN test structures with either an AlN nucleation layer or a GaN cap structures which are then measured before and immediately after 1.0 MeV electron irradiation at fluences of 1016 cm-2. Hall system measurements are used to observe changes in mobility, carrier concentration and conductivity as a function of Si3N4 thickness. Models are developed that relate the device structure and passivation layer under 1 MeV radiation to the observed changes to the measured photoluminescence and deep level transient spectroscopy. A software model is developed to determine the production rate of defects from primary 1 MeV electrons that can be used for other energies and materials. The presence of either a 50 or 120 nm Si 3N4 passivation layer preserves the channel current for both and appears to be optimal for radiation hardness.

  7. Aluminum nitride-silicon carbide whisker composites: Processing, properties, and microstructural stability

    Energy Technology Data Exchange (ETDEWEB)

    Cross, M.T.

    1990-01-01

    Aluminum nitride -- silicon carbide whisker composites with up to 20 vol % whiskers were fabricated by pressureless sintering (1750{degree}--1800{degree}C) and by hot-pressing (1700{degree}--1800{degree}C). Silicon carbide whiskers were found to degrade depending on the type of protective powder bed used during sintering. Whiskers were found to degraded in high oxygen containing samples by reaction with sintering additives. Whisker degradation was also due to the formation of silicon carbide -- aluminum nitride solid solution. No whisker degradation was observed in hot-pressed samples. For these samples Young's modulus and fracture toughness were measured. A 33% increase in the fracture toughness was measured by the indentation technique for a 20 vol % whisker composite. Operative toughening mechanisms were investigated using scanning electron microscopy. Crack deflection and whisker bridging were the dominant mechanisms. It was also shown that load transfer from matrix to whiskers can be a contributing factor to toughening. 88 refs., 34 figs., 11 tabs.

  8. Thermal conductivity of titanium aluminum silicon nitride coatings deposited by lateral rotating cathode arc

    Energy Technology Data Exchange (ETDEWEB)

    Samani, M.K., E-mail: majid1@e.ntu.edu.sg [School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore); Surface Technology Group, Singapore Institute of Manufacturing Technology, 71 Nanyang Drive, Singapore 638075 (Singapore); CINTRA-CNRS/NTU/THALES, UMI 3288, Research Techno Plaza, 50 Nanyang Drive, Border X Block, Level 6, Singapore 637553 (Singapore); Ding, X.Z. [Surface Technology Group, Singapore Institute of Manufacturing Technology, 71 Nanyang Drive, Singapore 638075 (Singapore); Amini, S. [School of Materials Science and Engineering. Nanyang Technological University, 50 Nanyang Avenue, Singapore (Singapore); Khosravian, N.; Cheong, J.Y. [School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore); Chen, G. [BC Photonics Technological Company, 5255 Woodwards Rd., Richmond, BC V7E 1G9 (Canada); Tay, B.K. [School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore); CINTRA-CNRS/NTU/THALES, UMI 3288, Research Techno Plaza, 50 Nanyang Drive, Border X Block, Level 6, Singapore 637553 (Singapore)

    2013-06-30

    A series of physical vapour deposition titanium aluminum silicon nitride nanocomposite coating with a different (Al + Si)/Ti atomic ratio, with a thickness of around 2.5 μm were deposited on stainless steel substrate by a lateral rotating cathode arc process in a flowing nitrogen atmosphere. The composition and microstructure of the as-deposited coatings were analyzed by energy dispersive X-ray spectroscopy, and X-ray diffraction, and cross-sectional scanning electron microscopy observation. The titanium nitride (TiN) coating shows a clear columnar structure with a predominant (111) preferential orientation. With the incorporation of Al and Si, the crystallite size in the coatings decreased gradually, and the columnar structure and (111) preferred orientation disappeared. Thermal conductivity of the as-deposited coating samples at room temperature was measured by using pulsed photothermal reflectance technique. Thermal conductivity of the pure TiN coating is about 11.9 W/mK. With increasing the (Al + Si)/Ti atomic ratio, the coatings' thermal conductivity decreased monotonously. This reduction of thermal conductivity could be ascribed to the variation of coatings' microstructure, including the decrease of grain size and the resultant increase of grain boundaries, the disruption of columnar structure, and the reduced preferential orientation. - Highlights: • A series of titanium aluminum silicon nitride with different (Al + Si)/Ti atomic ratio were deposited on Fe304. • The composition and microstructure of the as-deposited coatings were analyzed. • Thermal conductivity of the samples was measured by pulsed photothermal reflectance. • With increasing the (Al + Si)/Ti atomic ratio, thermal conductivity decreased. • Reduction of thermal conductivity is ascribed to the variation of its microstructure.

  9. Aluminum Nitride Micro-Channels Grown via Metal Organic Vapor Phase Epitaxy for MEMs Applications

    Energy Technology Data Exchange (ETDEWEB)

    Rodak, L.E.; Kuchibhatla, S.; Famouri, P.; Ting, L.; Korakakis, D.

    2008-01-01

    Aluminum nitride (AlN) is a promising material for a number of applications due to its temperature and chemical stability. Furthermore, AlN maintains its piezoelectric properties at higher temperatures than more commonly used materials, such as Lead Zirconate Titanate (PZT) [1, 2], making AlN attractive for high temperature micro and nanoelectromechanical (MEMs and NEMs) applications including, but not limited to, high temperature sensors and actuators, micro-channels for fuel cell applications, and micromechanical resonators. This work presents a novel AlN micro-channel fabrication technique using Metal Organic Vapor Phase Epitaxy (MOVPE). AlN easily nucleates on dielectric surfaces due to the large sticking coefficient and short diffusion length of the aluminum species resulting in a high quality polycrystalline growth on typical mask materials, such as silicon dioxide and silicon nitride [3,4]. The fabrication process introduced involves partially masking a substrate with a silicon dioxide striped pattern and then growing AlN via MOVPE simultaneously on the dielectric mask and exposed substrate. A buffered oxide etch is then used to remove the underlying silicon dioxide and leave a free standing AlN micro-channel. The width of the channel has been varied from 5 ìm to 110 ìm and the height of the air gap from 130 nm to 800 nm indicating the stability of the structure. Furthermore, this versatile process has been performed on (111) silicon, c-plane sapphire, and gallium nitride epilayers on sapphire substrates. Reflection High Energy Electron Diffraction (RHEED), Atomic Force Microscopy (AFM), and Raman measurements have been taken on channels grown on each substrate and indicate that the substrate is influencing the growth of the AlN micro-channels on the SiO2 sacrificial layer.

  10. Cubic Gallium Nitride on Micropatterned Si (001) for Longer Wavelength LEDs

    Energy Technology Data Exchange (ETDEWEB)

    Durniak, Mark T. [Rensselaer Polytechnic Inst., Troy, NY (United States). Dept. of Materials Science and Engineering; Chaudhuri, Anabil [Univ. of New Mexico, Albuquerque, NM (United States). Center for High Technology Materials; Smith, Michael L. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Advanced Material Sciences; Allerman, Andrew A. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Advanced Material Sciences; Lee, S. C. [Univ. of New Mexico, Albuquerque, NM (United States). Center for High Technology Materials; Brueck, S. R. J. [Univ. of New Mexico, Albuquerque, NM (United States). Center for High Technology Materials; Wetzel, Christian [Rensselaer Polytechnic Inst., Troy, NY (United States). Dept. of Physics, Applied Physics, and Astronomy and Dept. of Materials Science and Engineering

    2016-03-01

    GaInN/GaN heterostructures of cubic phase have the potential to overcome the limitations of wurtzite structures commonly used for light emitting and laser diodes. Wurtzite GaInN suffers from large internal polarization fields, which force design compromises ( 0001 ) towards ultra-narrow quantum wells and reduce recombination volume and efficiency. Cubic GaInN microstripes grown at Rensselaer Polytechnic Institute by metal organic vapor phase epitaxy on micropatterned Si , with {111} v-grooves oriented along Si ( 001 ) , offer a system free of internal polarization fields, wider quantum wells, and smaller <00$\\bar1$> bandgap energy. We prepared 6 and 9 nm Ga x In 1-x N/GaN single quantum well structures with peak wavelength ranges from 520 to 570 nm with photons predominately polarized perpendicular to the grooves. We estimate a cubic InN composition range of 0 < x < 0.5 and an upper limit of the internal quantum efficiency of 50%. Stripe geometry and polarization may be suitable for mode confinement and reduced threshold stimulated emission.

  11. Homoepitaxial growth of gallium nitride and aluminum nitride and its effects on device properties

    Science.gov (United States)

    Grandusky, James R.

    Lattice and thermal mismatch between epitaxial layers and substrates have long been the major challenge in obtaining high quality devices in the III-Nitride material system due to the lack of availability of native substrates. Recently methods for obtaining high quality free standing native substrates have been achieved and these products are beginning to enter the commercial market. However the quality of these substrates is significantly lower than those in traditional substrates such as Si and GaAs and the high cost and low availability makes it difficult to study the homoepitaxial growth. In order to use these substrates for epitaxial growth, one first must understand what features are needed for the substrates to be epi ready. In addition, one must understand what features in the substrates impact optoelectronic device performances most significantly. Initial homoepitaxial growth was carried out on both AIN and GaN substrates. On AIN substrates it was found that annealing the sample prior to growth was very important to obtain improved surface morphologies for the homoepitaxial layers. Similar annealing steps were attempted on GaN substrates, however annealing under hydrogen left large Ga droplets on the surface. For homoepitaxy on HVPE GaN substrates, the substrate characteristics, such as bowing, surface morphology, structural properties, and optical properties were found to have a large influence on growth and device performance. Even with a reduced dislocation density, substrates with poor characteristics performed worse than devices on GaN/sapphire. The effect of polishing process on the substrates was found to be very important and substrates with subsurface damage led to poor growth, even though the starting surface was very smooth. Optimization of a thin GaN layer and a multiple quantum well structure revealed very different optimum growth conditions for the HVPE substrates and the GaN/sapphire templates. Theoretical modeling using density functional

  12. Plasma synthesis and HPHT consolidation of BN nanoparticles, nanospheres, and nanotubes to produce nanocrystalline cubic boron nitride

    Science.gov (United States)

    Stout, Christopher

    Plasma methods offer a variety of advantages to nanomaterials synthesis. The process is robust, allowing varying particle sizes and phases to be generated simply by modifying key parameters. The work here demonstrates a novel approach to nanopowder synthesis using inductively-coupled plasma to decompose precursor, which are then quenched to produce a variety of boron nitride (BN)-phase nanoparticles, including cubic phase, along with short-range-order nanospheres (e.g., nano-onions) and BN nanotubes. Cubic BN (c-BN) powders can be generated through direct deposition onto a chilled substrate. The extremely-high pyrolysis temperatures afforded by the equilibrium plasma offer a unique particle growth environment, accommodating long deposition times while exposing resulting powders to temperatures in excess of 5000K without any additional particle nucleation and growth. Such conditions can yield short-range ordered amorphous BN structures in the form of 20nm diameter nanospheres. Finally, when introducing a rapid-quenching counter-flow gas against the plasma jet, high aspect ratio nanotubes are synthesized, which are collected on substrate situated radially. The benefits of these morphologies are also evident in high-pressure/high-temperature consolidation experiments, where nanoparticle phases can offer a favorable conversion route to super-hard c-BN while maintaining nanocrystallinity. Experiments using these morphologies are shown to begin to yield c-BN conversion at conditions as low as 2.0 GPa and 1500°C when using micron sized c-BN seeding to create localized regions of high pressures due to Hertzian forces acting on the nanoparticles.

  13. Rapid Synthesis of Sub-5 nm Sized Cubic Boron Nitride Nanocrystals with High-Piezoelectric Behavior via Electrochemical Shock.

    Science.gov (United States)

    Chen, Zhigang; Li, Lianhui; Cong, Shan; Xuan, Jinnan; Zhang, Dengsong; Geng, Fengxia; Zhang, Ting; Zhao, Zhigang

    2017-01-11

    A key challenge in current superhard materials research is the design of novel superhard nanocrystals (NCs) whereby new and unexpected properties may be predicted. Cubic boron nitride (c-BN) is a superhard material which ranks next to diamond; however, downsizing c-BN material below the 10 nm scale is rather challenging, and the interesting new properties of c-BN NCs remain unexplored and wide open. Herein we report an electrochemical shock method to prepare uniform c-BN NCs with a lateral size of only 3.4 ± 0.6 nm and a thickness of only 0.74 ± 0.3 nm at ambient temperature and pressure. The fabrication process is simple and fast, with c-BN NCs produced in just a few minutes. Most interestingly, the NCs exhibit excellent piezoelectric performance with a large recordable piezoelectric coefficient of 25.7 pC/N, which is almost 6 times larger than that from bulk c-BN and even competitive to conventional piezoelectric materials. The phenomenon of enhancement in the piezoelectric properties of BN NCs might arise from the nanoscale surface effect and nanoscale shape effect of BN NCs. This work paves an interesting route for exploring new properties of superhard NCs.

  14. MICROSTRUCTURE AND MECHANICAL PROPERTIES OF ULTRAFINE WC/Co CEMENTED CARBIDES WITH CUBIC BORON NITRIDE AND Cr₃C₂ ADDITIONS

    Directory of Open Access Journals (Sweden)

    Genrong Zhang

    2016-03-01

    Full Text Available This study investigates the microstructure and mechanical properties of ultrafine tungsten carbide and cobalt (WC/Co cemented carbides with cubic boron nitride (CBN and chromium carbide (Cr₃C₂ fabricated by a hot pressing sintering process. This study uses samples with 8 wt% Co content and 7.5 vol% CBN content, and with different Cr₃C₂ content ranging from 0 to 0.30 wt%. Based on the experimental results, Cr₃C₂ content has a significant influence on inhibiting abnormal grain growth and decreasing grain size in cemented carbides. Near-full densification is possible when CBN-WC/Co with 0.25 wt% Cr₃C₂ is sintered at 1350°C and 20 MPa; the resulting material possesses optimal mechanical properties and density, with an acceptable Vickers hardness of 19.20 GPa, fracture toughness of 8.47 MPa.m1/2 and flexural strength of 564 MPa.u̇ Å k⃗

  15. XPS analysis for cubic boron nitride crystal synthesized under high pressure and high temperature using Li{sub 3}N as catalysis

    Energy Technology Data Exchange (ETDEWEB)

    Guo, Xiaofei [School of Materials Science and Engineering, Shandong Jianzhu University, Ji’nan 250101 (China); School of Materials Science and Engineering, Shandong University, Ji’nan 250061 (China); Xu, Bin, E-mail: xubin@sdjzu.edu.cn [School of Materials Science and Engineering, Shandong Jianzhu University, Ji’nan 250101 (China); Zhang, Wen [School of Materials Science and Engineering, Shandong Jianzhu University, Ji’nan 250101 (China); Cai, Zhichao [School of Materials Science and Engineering, Shandong University, Ji’nan 250061 (China); Wen, Zhenxing [School of Materials Science and Engineering, Shandong Jianzhu University, Ji’nan 250101 (China)

    2014-12-01

    Highlights: • The cBN was synthesized by Li{sub 3}N as catalyst under high pressure and high temperature (HPHT). • The film coated on the as-grown cBN crystals was studied by XPS. • The electronic structure variation in the film was investigated. • The growth mechanism of cubic boron nitride crystal was analyzed briefly. - Abstract: Cubic boron nitride (cBN) single crystals are synthesized with lithium nitride (Li3N) as catalyst under high pressure and high temperature. The variation of electronic structures from boron nitride of different layers in coating film on the cBN single crystal has been investigated by X-ray photoelectron spectroscopy. Combining the atomic concentration analysis, it was shown that from the film/cBN crystal interface to the inner, the sp{sup 2} fractions are decreasing, and the sp{sup 3} fractions are increasing in the film at the same time. Moreover, by transmission electron microscopy, a lot of cBN microparticles are found in the interface. For there is no Li{sub 3}N in the film, it is possible that Li{sub 3}N first reacts with hexagonal boron nitride to produce Li{sub 3}BN{sub 2} during cBN crystals synthesis under high pressure and high temperature (HPHT). Boron and nitrogen atoms, required for cBN crystals growth, could come from the direct conversion from hexagonal boron nitride with the catalysis of Li{sub 3}BN{sub 2} under high pressure and high temperature, but not directly from the decomposition of Li{sub 3}BN{sub 2}.

  16. Use of Acoustic Emission During Scratch Testing for Understanding Adhesion Behavior of Aluminum Nitride Coatings

    Science.gov (United States)

    Choudhary, R. K.; Mishra, P.

    2016-06-01

    In this work, acoustic emission during scratch testing of the aluminum nitride coatings formed on stainless steel substrate by reactive magnetron sputtering was analyzed to assess the coating failure. The AlN coatings were formed under the variation of substrate temperature, substrate bias potential, and discharge power. The coatings deposited in the temperature range of 100 to 400 °C showed peak acoustic emission less than 1.5%, indicating ductile nature of the coating. However, for coatings formed with substrate negative bias potential of 20 to 50 V, numerous sharp acoustic bursts with maximum emission approaching 80% were observed, indicating brittle nature of the coatings with large number of defects present. The shift in the intensity of the first major acoustic peak toward higher load, with the increasing bias potential, confirmed improved adhesion of the coating. Also, the higher discharge power resulted in increased acoustic emission.

  17. MEMS switching of contour-mode aluminum nitride resonators for switchable and reconfigurable radio frequency filters

    Science.gov (United States)

    Nordquist, Christopher D.; Branch, Darren W.; Pluym, Tammy; Choi, Sukwon; Nguyen, Janet H.; Grine, Alejandro; Dyck, Christopher W.; Scott, Sean M.; Sing, Molly N.; Olsson, Roy H., III

    2016-10-01

    Switching of transducer coupling in aluminum nitride contour-mode resonators provides an enabling technology for future tunable and reconfigurable filters for multi-function RF systems. By using microelectromechanical capacitive switches to realize the transducer electrode fingers, coupling between the metal electrode finger and the piezoelectric material is modulated to change the response of the device. On/off switched width extensional resonators with an area of  24 dB switching ratio at a resonator center frequency of 635 MHz. Other device examples include a 63 MHz resonator with switchable impedance and a 470 MHz resonator with 127 kHz of fine center frequency tuning accomplished by mass loading of the resonator with the MEMS switches.

  18. Photonic crystal dumbbell resonators in silicon and aluminum nitride integrated optical circuits

    CERN Document Server

    Pernice, W H P; Tang, H X

    2014-01-01

    Tight confinement of light in photonic cavities provides an efficient template for the realization of high optical intensity with strong field gradients. Here we present such a nanoscale resonator device based on a one-dimensional photonic crystal slot cavity. Our design allows for realizing highly localized optical modes with theoretically predicted Q factors in excess of 106. The design is demonstrated experimentally both in a high-contrast refractive index system (silicon), as well as in medium refractive index contrast devices made from aluminum nitride. We achieve extinction ratio of 21dB in critically coupled resonators using an on-chip readout platform with loaded Q factors up to 33,000. Our approach holds promise for realizing ultra-small opto-mechanical resonators for high-frequency operation and sensing applications.

  19. Simulation of Transport Phenomena in Aluminum Nitride Single-Crystal Growth

    Energy Technology Data Exchange (ETDEWEB)

    de Almeida, V F

    2002-04-03

    The goal of this project is to apply advanced computer-aided modeling techniques for simulating coupled radiation transfer present in the bulk growth of aluminum nitride (AlN) single-crystals. Producing and marketing high-quality single-crystals of AlN is currently the focus of Crystal IS, Inc., which is engaged in building a new generation of substrates for electronic and optical-electronic devices. Modeling and simulation of this company's proprietary innovative processing of AlN can substantially improve the understanding of physical phenomena, assist design, and reduce the cost and time of research activities. This collaborative work supported the goals of Crystal IS, Inc. in process scale-up and fundamental analysis with promising computational tools.

  20. Substrate-dependent thermal conductivity of aluminum nitride thin-films processed at low temperature

    Energy Technology Data Exchange (ETDEWEB)

    Belkerk, B. E., E-mail: boubakeur.belkerk@gmail.com [Institut des Matériaux Jean Rouxel (IMN), University of Nantes, 2 rue de la Houssinière BP 32229, 44322 Nantes cedex 3 (France); Universités de Constantine, Laboratoire Microsystèmes et Instrumentation (LMI), Université Constantine 1, Faculté des Sciences de la Technologie, Route de Ain El Bey, Constantine 25017 (Algeria); Bensalem, S.; Soussou, A.; Carette, M.; Djouadi, M. A.; Scudeller, Y. [Institut des Matériaux Jean Rouxel (IMN), University of Nantes, 2 rue de la Houssinière BP 32229, 44322 Nantes cedex 3 (France); Al Brithen, H. [Department of Physics and Astronomy at College of Science, King Saud University at Riyadh (Saudi Arabia)

    2014-12-01

    In this paper, we report on investigation concerning the substrate-dependent thermal conductivity (k) of Aluminum Nitride (AlN) thin-films processed at low temperature by reactive magnetron sputtering. The thermal conductivity of AlN films grown at low temperature (<200 °C) on single-crystal silicon (Si) and amorphous silicon nitride (SiN) with thicknesses ranging from 100 nm to 4000 nm was measured with the transient hot-strip technique. The k values for AlN films on SiN were found significantly lower than those on Silicon consistently with their microstructures revealed by X-ray diffraction, high resolution scanning electron microscopy, and transmission electron microscopy. The change in k was due to the thermal boundary resistance found to be equal to 10 × 10{sup −9} Km{sup 2}W{sup −1} on SiN against 3.5 × 10{sup −9} Km{sup 2}W{sup −1} on Si. However, the intrinsic thermal conductivity was determined with a value as high as 200 Wm{sup −1}K{sup −1} whatever the substrate.

  1. Impact of annealing temperature on the mechanical and electrical properties of sputtered aluminum nitride thin films

    Science.gov (United States)

    Gillinger, M.; Schneider, M.; Bittner, A.; Nicolay, P.; Schmid, U.

    2015-02-01

    Aluminium nitride (AlN) is a promising material for challenging sensor applications such as process monitoring in harsh environments (e.g., turbine exhaust), due to its piezoelectric properties, its high temperature stability and good thermal match to silicon. Basically, the operational temperature of piezoelectric materials is limited by the increase of the leakage current as well as by enhanced diffusion effects in the material at elevated temperatures. This work focuses on the characterization of aluminum nitride thin films after post deposition annealings up to temperatures of 1000 °C in harsh environments. For this purpose, thin film samples were temperature loaded for 2 h in pure nitrogen and oxygen gas atmospheres and characterized with respect to the film stress and the leakage current behaviour. The X-ray diffraction results show that AlN thin films are chemically stable in oxygen atmospheres for 2 h at annealing temperatures of up to 900 °C. At 1000 °C, a 100 nm thick AlN layer oxidizes completely. For nitrogen, the layer is stable up to 1000 °C. The activation energy of the samples was determined from leakage current measurements at different sample temperatures, in the range between 25 and 300 °C. Up to an annealing temperature of 700 °C, the leakage current in the thin film is dominated by Poole-Frenkel behavior, while at higher annealing temperatures, a mixture of different leakage current mechanisms is observed.

  2. Cubic silicon carbide and boron nitride as possible primary pressure calibrants for high pressure and temperature scale

    Science.gov (United States)

    Zhuravlev, K. K.; Goncharov, A. F.; Tkachev, S. N.; Prakapenka, V.

    2010-12-01

    K. K. Zhuravlev, A. F. Goncharov Geophysical Laboratory, Carnegie Institution of Washington, 5251 Broad Branch Road NW, Washington DC, 20015 V. Prakapenka, S. N. Tkachev CARS, the University of Chicago, Bldg. 434A, Argonne National Laboratory, 9700 S. Cass. Ave., Argonne, IL 60439 Abstract Since its introduction, ruby-based pressure scale (Mao et al., 1986) has been the most commonly used by the high-pressure scientific community. However, it has limited use at elevated temperatures, due to the weakening and broadening of the ruby fluorescence line. The recent developments in the field of high temperature, high pressure physics and geophysics require some alternative pressure scale, which will be capable of measuring pressures at temperatures up to 3000 K. Cubic boron nitride (cBN) was recently (Goncharov et al., 2005) proposed as the possible pressure calibrant. It has been suggested that the simultaneous use of x-ray diffraction to measure density and Brillouin spectroscopy to obtain elastic properties of the crystal can be used to construct the pressure scale independent of any other pressure standards, i.e. cBN can be a primary pressure calibrant. However, the acoustic velocities of cBN are very close to those of diamond and, therefore, are hard to resolve in experiment at high pressures in diamond-anvil cell. Another possible primary pressure calibrant is cubic silicon carbide (SiC-3C). Its density and elastic parameters are quite different from the diamond ones and it is stable over the broad range of temperatures and pressures (up to 1 Mbar). SiC-3C is transparent and allows the use of Brillouin spectroscopy. Additionally, SiC-3C has two strong Raman lines, which can be used for the optical in situ pressure measurements. We report our experimental data on both cBN and SiC-3C and show that they, indeed, can be used in constructing reliable and accurate high-pressure, high-temperature scale. We performed single crystal x-ray diffraction and Brillouin

  3. Surfactant-Enabled Epitaxy of Smooth, Cubic Oxides on Gallium Nitride

    Science.gov (United States)

    Paisley, Elizabeth Aldret

    Epitaxial integration of polar oxides with polar semiconductors presents the possibility of tunable 2D charge carriers at polar interfaces and integration of non-linear dielectric properties if defect densities are low and interfaces are smooth. Achieving this in materials with highly dissimilar structure and symmetry remains a serious challenge and requires a dramatically improved understanding of chemically and structurally dissimilar interfaces and their synthesis. Current efforts to achieve such devices are impeded by the fact that many polar oxides have a close-packed cubic substructure that requires the oxide to grow along the {111} direction, which is compatible with hexagonal (0002) GaN. Since the {111} direction is not the lowest energy face for these oxides, conventional methods used to synthesize these oxides usually allow the interface to compensate by forming facets resulting in defects, detrimental to the sustaining interface conductivity. This thesis demonstrates a new methodology developed to allow in situ stabilization of desired crystallographic habits where water vapor is utilized during growth to hydroxylate the oxide (111) surfaces, changing the equilibrium habit from cubic to octahedral, eliminating the (100)-faceting tendency. Bulk thermodynamic calculations show that a hydroxide termination can stabilize the (111)-face. Further, Ca(OH)2 (the structure likely to represent such termination) provides a low-energy surface with six-fold symmetry and atomic registry matching {111}-CaO and GaN. Additionally, the relative free energies of formation for CaO and Ca(OH)2 provide an adequate processing window to avoid competition between oxide and hydroxide deposition. This approach is demonstrated for three model systems of rocksalt oxides grown along a polar direction on GaN: MgO, CaO, and lattice-matched compositions: Mg0.52Ca0.48O. MBE growth of smooth (111) CaO is demonstrated using RHEED intensity vs. time oscillations that show layer

  4. The effects of substrates on the geometry and optical properties of aluminum nitride nanowires.

    Science.gov (United States)

    Gharavi, Mohammad Amin; Haratizadeh, Hamid; Kitai, Adrian; Moafi, Ali

    2012-12-01

    Based on a Chemical Vapor Deposition (CVD) process, an alumina tube electric furnace was assembled to synthesize different one dimensional aluminum nitride (AIN) nanostructures via aluminum powder and nitrogen gas flow. The products obtained where nanowires, nanorods, a unique chain-linked nanocage structure made from an entanglement of AIN nanowires and an interesting micro-sized spherical architecture. The different growth parameters dictated to the system result the product variety, making structure tuning possible. The incorporation of different substrates (silicon and alumina) not only leads to the formation of different shaped structures, but also results different optical emissions ranging from 450 nm (blue) to 650 nm (red), indicating the high potential of AIN nanostructures in LED fabrication. Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM), Selective Area Electron Diffraction (SAED), X-ray Diffraction (XRD), Photoluminescence (PL) and Energy Dispersive X-ray (EDX) analysis results are discussed and a Vapor-Liquid-Solid (VLS)/Vapor-Solid (VS) based growth mechanism is proposed for the mentioned structures.

  5. In-resonator variation of waveguide cross-sections for dispersion control of aluminum nitride micro-rings

    CERN Document Server

    Jung, Hojoong; Tang, Hong X

    2015-01-01

    We propose and demonstrate a dispersion control technique by combination of different waveguide cross sections in an aluminum nitride micro-ring resonator. Narrow and wide waveguides with normal and anomalous dispersion, respectively, are linked with tapering waveguides and enclosed in a ring resonator to produce a total dispersion near zero. The mode-coupling in multimoded waveguides is also effectively suppressed. This technique provides new degrees of freedom and enhanced flexibility in engineering the dispersion of microcomb resonators.

  6. Optical properties of aluminum nitride thin films grown by direct-current magnetron sputtering close to epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Stolz, A. [Institut d' Electronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, PRES Lille, Université Nord de France, Avenue Poincaré, 59652 Villeneuve d' Ascq Cedex (France); Soltani, A., E-mail: ali.soltani@iemn.univ-lille1.fr [Institut d' Electronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, PRES Lille, Université Nord de France, Avenue Poincaré, 59652 Villeneuve d' Ascq Cedex (France); Abdallah, B. [Department of Materials Physics, Atomic Energy Commission of Syria, Damascus, P.O. Box 6091 (Syrian Arab Republic); Charrier, J. [Fonctions Optiques pour les Technologies de l' informatiON (FOTON), UMR CNRS 6082, 6, rue de Kerampont CS 80518, 22305 Lannion Cedex (France); Deresmes, D. [Institut d' Electronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, PRES Lille, Université Nord de France, Avenue Poincaré, 59652 Villeneuve d' Ascq Cedex (France); Jouan, P.-Y.; Djouadi, M.A. [Institut des Matériaux Jean Rouxel – IMN, UMR CNRS 6502, 2, rue de la Houssinère BP 32229, 44322 Nantes (France); Dogheche, E.; De Jaeger, J.-C. [Institut d' Electronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, PRES Lille, Université Nord de France, Avenue Poincaré, 59652 Villeneuve d' Ascq Cedex (France)

    2013-05-01

    Low-temperature Aluminum Nitride (AlN) thin films with a thickness of 3 μm were deposited by Direct-Current magnetron sputtering on sapphire substrate. They present optical properties similar to those of epitaxially grown films. Different characterization methods such as X-Ray Diffraction, Transmission Electron Microscopy and Atomic Force Microscopy were used to determine the structural properties of the films such as its roughness and crystallinity. Newton interferometer was used for stress measurement of the films. Non-destructive prism-coupling technique was used to determine refractive index and thickness homogeneity by a mapping on the whole sample area. Results show that AlN films grown on AlGaN layer have a high crystallinity close to epitaxial films, associated to a low intrinsic stress for low thickness. These results highlight that it is possible to grow thick sample with microstructure and optical properties close to epitaxy, even on a large surface. - Highlights: ► Aluminum Nitride sputtering technique with a low temperature growth process ► Epitaxial quality of two microns sputtered Aluminum Nitride film ► Optics as a non-destructive accurate tool for acoustic wave investigation.

  7. Impact of annealing temperature on the mechanical and electrical properties of sputtered aluminum nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Gillinger, M.; Schneider, M.; Bittner, A.; Schmid, U. [Institute of Sensor and Actuator Systems, Vienna University of Technology, Vienna 1040 (Austria); Nicolay, P. [CTR Carinthian Tech Research AG, Villach 9524 (Austria)

    2015-02-14

    Aluminium nitride (AlN) is a promising material for challenging sensor applications such as process monitoring in harsh environments (e.g., turbine exhaust), due to its piezoelectric properties, its high temperature stability and good thermal match to silicon. Basically, the operational temperature of piezoelectric materials is limited by the increase of the leakage current as well as by enhanced diffusion effects in the material at elevated temperatures. This work focuses on the characterization of aluminum nitride thin films after post deposition annealings up to temperatures of 1000 °C in harsh environments. For this purpose, thin film samples were temperature loaded for 2 h in pure nitrogen and oxygen gas atmospheres and characterized with respect to the film stress and the leakage current behaviour. The X-ray diffraction results show that AlN thin films are chemically stable in oxygen atmospheres for 2 h at annealing temperatures of up to 900 °C. At 1000 °C, a 100 nm thick AlN layer oxidizes completely. For nitrogen, the layer is stable up to 1000 °C. The activation energy of the samples was determined from leakage current measurements at different sample temperatures, in the range between 25 and 300 °C. Up to an annealing temperature of 700 °C, the leakage current in the thin film is dominated by Poole-Frenkel behavior, while at higher annealing temperatures, a mixture of different leakage current mechanisms is observed.

  8. Processing of Silver-Implanted Aluminum Nitride for Energy Harvesting Devices

    Science.gov (United States)

    Alleyne, Fatima Sierre

    One of the more attractive sources of green energy has roots in the popular recycling theme of other green technologies, now known by the term "energy scavenging." In its most promising conformation, energy scavenging converts cyclic mechanical vibrations in the environment or random mechanical pressure pulses, caused by sources ranging from operating machinery to human footfalls, into electrical energy via piezoelectric transducers. While commercial piezoelectrics have evolved to favor lead zirconate titanate (PZT) for its combination of superior properties, the presence of lead in these ceramic compounds raises resistance to their application in anything "green" due to potential health implications during their manufacturing, recycling, or in-service application, if leaching occurs. Therefore in this study we have pursued the application of aluminum nitride (AlN) as a non-toxic alternative to PZT, seeking processing pathways to augment the modest piezoelectric performance of AlN and exploit its compatibility with complementary-metal-oxide semiconductor (CMOS) manufacturing. Such piezoelectric transducers have been categorized as microelectromechanical systems (MEMS), which despite more than a decade of research in this field, is plagued by delamination at the electrode/piezoelectric interface. Consequently the electric field essential to generate and sustain the piezoelectric response of these devices is lost, resulting in device failure. Working on the hypothesis that buried conducting layers can both mitigate the delamination problem and generate sufficient electric field to engage the operation of resonator devices, we have undertaken a study of silver ion implantation to experimentally assess its feasibility. As with most ion implantation procedures employed in semiconductor fabrication, the implanted sample is subjected to a thermal treatment, encouraging diffusion-assisted precipitation of the implanted species at high enough concentrations. The objective

  9. High solids loading of aluminum nitride powder in epoxy resin: Dispersion and thermal conductivity

    Science.gov (United States)

    Lee, Eunsung

    Most semiconductor devices are now packaged in an epoxy polymer composite, which includes a silica powder filler for reducing the thermal expansion coefficient. However, increased heat output from near-future semiconductors will require higher thermal conductivity fillers such as aluminum nitride powder, instead of silica. This thesis research is intended to apply improved dispersant chemistry, in order to achieve a high volume percentage of AlN powder in epoxy, increasing the thermal conductivity of the composite without causing excessive viscosity before the epoxy monomer is crosslinked. In initial experiments, the dispersibility of aluminum oxide in epoxy monomer resin was better than that of AlN, because of the weaker basicity of oxide surfaces compared with nitride. To improve the dispersibility of AlN, its surface was modified by pretreatment with silane coupling agents. Silane molecules with different head groups were investigated. In those experiments, methylsilane gave lower viscosities than chloro- or methoxysilane, while pretreatments using organic acids increased the viscosity of the AlN dispersion. The viscosity changes and FTIR peak intensity trends suggested that the silane molecules could be adsorbed on AlN surfaces in the form of a monolayer during optimization experiments, and the best silane monolayer coverage on the AlN powder surfaces was achieved with 2 wt% amounts in a 3 hour treatment. A particular phosphate ester was a good second layer dispersant for the AlN-plus-epoxy system. When that dispersant was added onto the silane-treated filler surfaces, the degree of viscosity reduction was dependent on the types of silane coupling agent functional groups. In the optimized results, silane pretreatment followed by dispersant addition was better than either alone. High solids loading, up to 57 vol.%, was achieved with a wide particle size distribution of powder, and the viscosity of that dispersion was 60,000 to 90,000 cps, which easily flowed by

  10. Boron nitride composites

    Energy Technology Data Exchange (ETDEWEB)

    Kuntz, Joshua D.; Ellsworth, German F.; Swenson, Fritz J.; Allen, Patrick G.

    2017-02-21

    According to one embodiment, a composite product includes: a matrix material including hexagonal boron nitride and one or more borate binders; and a plurality of cubic boron nitride particles dispersed in the matrix material. According to another embodiment, a composite product includes: a matrix material including hexagonal boron nitride and amorphous boron nitride; and a plurality of cubic boron nitride particles dispersed in the matrix material.

  11. Design of defect spins in piezoelectric aluminum nitride for solid-state hybrid quantum technologies

    Science.gov (United States)

    Seo, Hosung; Govoni, Marco; Galli, Giulia

    2016-02-01

    Spin defects in wide-band gap semiconductors are promising systems for the realization of quantum bits, or qubits, in solid-state environments. To date, defect qubits have only been realized in materials with strong covalent bonds. Here, we introduce a strain-driven scheme to rationally design defect spins in functional ionic crystals, which may operate as potential qubits. In particular, using a combination of state-of-the-art ab-initio calculations based on hybrid density functional and many-body perturbation theory, we predicted that the negatively charged nitrogen vacancy center in piezoelectric aluminum nitride exhibits spin-triplet ground states under realistic uni- and bi-axial strain conditions; such states may be harnessed for the realization of qubits. The strain-driven strategy adopted here can be readily extended to a wide range of point defects in other wide-band gap semiconductors, paving the way to controlling the spin properties of defects in ionic systems for potential spintronic technologies.

  12. High Temperature Annealing Studies on the Piezoelectric Properties of Thin Aluminum Nitride Films

    Energy Technology Data Exchange (ETDEWEB)

    Farrell, R.; Pagan, V.R.; Kabulski, A.; Kuchibhatla, S.; Harman, J.; Kasarla, K.R.; Rodak, L.E.; Hensel, J.P.; Famouri, P.; Korakakis, D.

    2008-01-01

    A Rapid Thermal Annealing (RTA) system was used to anneal sputtered and MOVPE-grown Aluminum Nitride (AlN) thin films at temperatures up to 1000°C in ambient and controlled environments. According to Energy Dispersive X-Ray Analysis (EDAX), the films annealed in an ambient environment rapidly oxidize after five minutes at 1000°C. Below 1000°C the films oxidized linearly as a function of annealing temperature which is consistent with what has been reported in literature [1]. Laser Doppler Vibrometry (LDV) was used to measure the piezoelectric coefficient, d33, of these films. Films annealed in an ambient environment had a weak piezoelectric response indicating that oxidation on the surface of the film reduces the value of d33. A high temperature furnace has been built that is capable of taking in-situ measurements of the piezoelectric response of AlN films. In-situ d33 measurements are recorded up to 300°C for both sputtered and MOVPE-grown AlN thin films. The measured piezoelectric response appears to increase with temperature up to 300°C possibly due to stress in the film.

  13. High Temperature Annealing Studies on the Piezoelectric Properties of Thin Aluminum Nitride Films

    Energy Technology Data Exchange (ETDEWEB)

    R. Farrell; V. R. Pagan; A. Kabulski; Sridhar Kuchibhatl; J. Harman; K. R. Kasarla; L. E. Rodak; P. Famouri; J. Peter Hensel; D. Korakakis

    2008-05-01

    A Rapid Thermal Annealing (RTA) system was used to anneal sputtered and MOVPE grown Aluminum Nitride (AlN) thin films at temperatures up to 1000°C in ambient and controlled environments. According to Energy Dispersive X-Ray Analysis (EDAX), the films annealed in an ambient environment rapidly oxidize after five minutes at 1000°C. Below 1000°C the films oxidized linearly as a function of annealing temperature which is consistent with what has been reported in literature [1]. Laser Doppler Vibrometry (LDV) was used to measure the piezoelectric coefficient, d33, of these films. Films annealed in an ambient environment had a weak piezoelectric response indicating that oxidation on the surface of the film reduces the value of d33. A high temperature furnace has been built that is capable of taking in-situ measurements of the piezoelectric response of AlN films. In-situ d33 measurements are recorded up to 300°C for both sputtered and MOVPE-grown AlN thin films. The measured piezoelectric response appears to increase with temperature up to 300°C possibly due to stress in the film.

  14. MEMS flexible artificial basilar membrane fabricated from piezoelectric aluminum nitride on an SU-8 substrate

    Science.gov (United States)

    Jang, Jongmoon; Jang, Jeong Hun; Choi, Hongsoo

    2017-07-01

    In this paper, we present a flexible artificial basilar membrane (FABM) that mimics the passive mechanical frequency selectivity of the basilar membrane. The FABM is composed of a cantilever array made of piezoelectric aluminum nitride (AlN) on an SU-8 substrate. We analyzed the orientations of the AlN crystals using scanning electron microscopy and x-ray diffraction. The AIN crystals are oriented in the c-axis (0 0 2) plane and effective piezoelectric coefficient was measured as 3.52 pm V-1. To characterize the frequency selectivity of the FABM, mechanical displacements were measured using a scanning laser Doppler vibrometer. When electrical and acoustic stimuli were applied, the measured resonance frequencies were in the ranges of 663.0-2369 Hz and 659.4-2375 Hz, respectively. These results demonstrate that the mechanical frequency selectivity of this piezoelectric FABM is close to the human communication frequency range (300-3000 Hz), which is a vital feature of potential auditory prostheses.

  15. Laterally vibrating resonator based elasto-optic modulation in aluminum nitride

    Science.gov (United States)

    Ghosh, Siddhartha; Piazza, Gianluca

    2016-06-01

    An integrated strain-based optical modulator driven by a piezoelectric laterally vibrating resonator is demonstrated. The composite structure consists of an acoustic Lamb wave resonator, in which a photonic racetrack resonator is internally embedded to enable overlap of the guided optical mode with the induced strain field. Both types of resonators are defined in an aluminum nitride (AlN) thin film, which rests upon a layer of silicon dioxide in order to simultaneously define optical waveguides, and the structure is released from a silicon substrate. Lateral vibrations produced by the acoustic resonator are transferred through a partially etched layer of AlN, producing a change in the effective index of the guided wave through the interaction of the strain components with the AlN elasto-optic (p) coefficients. Optical modulation through the elasto-optic effect is demonstrated at electromechanically actuated frequencies of 173 MHz and 843 MHz. This device geometry further enables the development of MEMS-based optical modulators in addition to studying elasto-optic interactions in suspended piezoelectric thin films.

  16. Design of defect spins in piezoelectric aluminum nitride for solid-state hybrid quantum technologies.

    Science.gov (United States)

    Seo, Hosung; Govoni, Marco; Galli, Giulia

    2016-02-15

    Spin defects in wide-band gap semiconductors are promising systems for the realization of quantum bits, or qubits, in solid-state environments. To date, defect qubits have only been realized in materials with strong covalent bonds. Here, we introduce a strain-driven scheme to rationally design defect spins in functional ionic crystals, which may operate as potential qubits. In particular, using a combination of state-of-the-art ab-initio calculations based on hybrid density functional and many-body perturbation theory, we predicted that the negatively charged nitrogen vacancy center in piezoelectric aluminum nitride exhibits spin-triplet ground states under realistic uni- and bi-axial strain conditions; such states may be harnessed for the realization of qubits. The strain-driven strategy adopted here can be readily extended to a wide range of point defects in other wide-band gap semiconductors, paving the way to controlling the spin properties of defects in ionic systems for potential spintronic technologies.

  17. Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films

    Energy Technology Data Exchange (ETDEWEB)

    Broas, Mikael, E-mail: mikael.broas@aalto.fi; Vuorinen, Vesa [Department of Electrical Engineering and Automation, Aalto University, P.O. Box 13500, FIN-00076 Aalto, Espoo (Finland); Sippola, Perttu; Pyymaki Perros, Alexander; Lipsanen, Harri [Department of Micro- and Nanosciences, Aalto University, P.O. Box 13500, FIN-00076 Aalto, Espoo (Finland); Sajavaara, Timo [Department of Physics, University of Jyväskylä, P.O. Box 35, FIN-40014 Jyväskylä (Finland); Paulasto-Kröckel, Mervi [Department of Electrical Engineering and Automation, Aalto University. P.O. Box 13500, FIN-00076 Aalto, Espoo (Finland)

    2016-07-15

    Plasma-enhanced atomic layer deposition was utilized to grow aluminum nitride (AlN) films on Si from trimethylaluminum and N{sub 2}:H{sub 2} plasma at 200 °C. Thermal treatments were then applied on the films which caused changes in their chemical composition and nanostructure. These changes were observed to manifest in the refractive indices and densities of the films. The AlN films were identified to contain light element impurities, namely, H, C, and excess N due to nonideal precursor reactions. Oxygen contamination was also identified in the films. Many of the embedded impurities became volatile in the elevated annealing temperatures. Most notably, high amounts of H were observed to desorb from the AlN films. Furthermore, dinitrogen triple bonds were identified with infrared spectroscopy in the films. The triple bonds broke after annealing at 1000 °C for 1 h which likely caused enhanced hydrolysis of the films. The nanostructure of the films was identified to be amorphous in the as-deposited state and to become nanocrystalline after 1 h of annealing at 1000 °C.

  18. Laterally vibrating resonator based elasto-optic modulation in aluminum nitride

    Directory of Open Access Journals (Sweden)

    Siddhartha Ghosh

    2016-06-01

    Full Text Available An integrated strain-based optical modulator driven by a piezoelectric laterally vibrating resonator is demonstrated. The composite structure consists of an acoustic Lamb wave resonator, in which a photonic racetrack resonator is internally embedded to enable overlap of the guided optical mode with the induced strain field. Both types of resonators are defined in an aluminum nitride (AlN thin film, which rests upon a layer of silicon dioxide in order to simultaneously define optical waveguides, and the structure is released from a silicon substrate. Lateral vibrations produced by the acoustic resonator are transferred through a partially etched layer of AlN, producing a change in the effective index of the guided wave through the interaction of the strain components with the AlN elasto-optic (p coefficients. Optical modulation through the elasto-optic effect is demonstrated at electromechanically actuated frequencies of 173 MHz and 843 MHz. This device geometry further enables the development of MEMS-based optical modulators in addition to studying elasto-optic interactions in suspended piezoelectric thin films.

  19. Improving source efficiency for aluminum nitride grown by metal organic chemical vapor deposition

    Science.gov (United States)

    Foronda, Humberto M.; Laurent, Matthew A.; Yonkee, Benjanim; Keller, Stacia; DenBaars, Steven P.; Speck, James S.

    2016-08-01

    Parasitic pre-reactions are known to play a role in the growth of aluminum nitride (AlN) via metal organic chemical vapor deposition, where they can deplete precursor molecules before reaching the substrate, leading to poor growth efficiency. Studies have shown that reducing the growth pressure and growth temperature results in improved growth efficiency of AlN; however, superior crystal quality and reduced impurity incorporation are generally best obtained when growing at high temperatures. This study shows that, with proper alkyl source dilution, parasitic pre-reactions can be suppressed while maintaining high growth temperatures. The results show an 18× increase in growth rate and efficiency of AlN films: from 0.04 μm h-1 to 0.73 μm h-1, and 26 μm mol-1 to 502 μm mol-1, respectively; under constant TMAl flow and a small change in total gas flow. This results in 6.8% of Al atoms from the injected TMAl being utilized for AlN layer growth for this reactor configuration. This is better than the standard GaN growth, where 6.0% of the Ga atoms injected from TMGa are utilized for GaN growth.

  20. Synthesis of aluminum nitride thin films and their potential applications in solid state thermoluminescence dosimeters

    Energy Technology Data Exchange (ETDEWEB)

    Choudhary, R.K., E-mail: rupeshkr@barc.gov.in [Materials Processing Division, Bhabha Atomic Research Centre, Mumbai 400085 (India); Soni, A. [Radiological Physics and Advisory Division, Bhabha Atomic Research Centre, Mumbai 400085 (India); Mishra, P. [Materials Processing Division, Bhabha Atomic Research Centre, Mumbai 400085 (India); Mishra, D.R.; Kulkarni, M.S. [Radiological Physics and Advisory Division, Bhabha Atomic Research Centre, Mumbai 400085 (India)

    2014-11-15

    In this work, aluminum nitride thin films were deposited on Si (1 1 1) substrate by magnetron sputtering. The obtained film was studied for thermoluminescence after irradiating it to various doses of γ-rays. Thermoluminescence measurement showed photon emission at an irradiation dose of 100 Gy or higher. Deconvolution of the experimental glow curve indicated that recombination centers in AlN were present below 2 eV trap depth. Irradiated AlN films showed less than 2% fading of TL signals on storage for 1 month in dark conditions and for the same period, light induced fading was also less than 4%. A linear variation of integrated thermoluminescence counts with absorbed dose has been observed up to an irradiation dose of 10 kGy. The deposited film was also characterized by grazing incidence X-ray diffraction, atomic force microscopy and secondary ion mass spectroscopy. Grazing incidence X-ray diffraction measurement of the obtained film has shown formation of polycrystalline wurtzite AlN having preferred orientation along (1 0 0) plane. Secondary ion mass spectroscopy analysis revealed the presence of oxygen in the film. - Highlights: • TL emission in sputter deposited AlN thin films when irradiated to gamma rays. • Linear dose–response up to 10 kGy irradiation dose. • Negligible fading of TL signals on storage. • Nominal light induced TL fading. • AlN thin films found potentially suitable for high dose dosimetry applications.

  1. Electric field effect on (6,0) zigzag single-walled aluminum nitride nanotube.

    Science.gov (United States)

    Baei, Mohammad T; Peyghan, Ali Ahmadi; Moghimi, Masoumeh

    2012-09-01

    Structural, electronic, and electrical responses of the H-capped (6,0) zigzag single-walled aluminum nitride nanotube was studied under the parallel and transverse electric fields with strengths 0-140 × 10(-4) a.u. by using density functional calculations. Geometry optimizations were carried out at the B3LYP/6-31G* level of theory using a locally modified version of the GAMESS electronic structure program. The dipole moments, atomic charge variations, and total energy of the (6,0) zigzag AlNNT show increases with increase in the applied external electric field strengths. The length, tip diameters, electronic spatial extent, and molecular volume of the nanotube do not significantly change with increasing electric field strength. The energy gap of the nanotube decreases with increases of the electric field strength and its reactivity is increased. Increase of the ionization potential, electron affinity, chemical potential, electrophilicity, and HOMO and LUMO in the nanotube with increase of the applied parallel electric field strengths shows that the parallel field has a much stronger interaction with the nanotube with respect to the transverse electric field strengths. Analysis of the parameters indicates that the properties of AlNNTs can be controlled by the proper external electric field.

  2. High temperature performance of sputter-deposited piezoelectric aluminum nitride thin films

    Science.gov (United States)

    Gillinger, M.; Schneider, M.; Bittner, A.; Nicolay, P.; Schmid, U.

    2015-05-01

    Aluminum nitride (AlN) is a promising material for sensor applications in harsh environments such as turbine exhausts or thermal power plants due to its piezoelectric properties, good thermal match to silicon and high temperature stability. Typically, the usage of piezoelectric materials in high temperature is limited by the Curie-temperature, the increase of the leakage current as well as by enhanced diffusion effects in the materials. In order to exploit the high temperature potential of AlN thin films, post deposition annealing experiments up to 1000°C in both oxygen and nitrogen gas atmospheres for 2 h were performed. X-ray diffraction measurements indicate that the thin films are chemically stable in a pure oxygen atmosphere for 2 h at annealing temperatures of up to 900°C. After a 2 h annealing step at 1000°C in pure oxygen. However, a 100 nm thin AlN film is completely oxidized. In contrast, the layer is stable up to 1000°C in pure nitrogen atmosphere. The surface topology changes significantly at annealing temperatures above 800°C independent of annealing atmosphere. The surface roughness is increased by about one order of magnitude compared to the "as deposited" state. This is predominantly attributed to recrystallization processes occurring during high temperature loading. Up to an annealing temperature of 700°C, a Poole-Frenkel conduction mechanism dominates the leakage current characteristics. Above, a mixture of different leakage current mechanisms is observed.

  3. Scanning proximal microscopy study of the thin layers of silicon carbide-aluminum nitride solid solution manufactured by fast sublimation epitaxy

    Directory of Open Access Journals (Sweden)

    Tománek P.

    2013-05-01

    Full Text Available The objective of the study is a growth of SiC/(SiC1−x(AlNx structures by fast sublimation epitaxy of the polycrystalline source of (SiC1−x(AlNx and their characterisation by proximal scanning electron microscopy and atomic force microscopy. For that purpose optimal conditions of sublimation process have been defined. Manufactured structures could be used as substrates for wide-band-gap semiconductor devices on the basis of nitrides, including gallium nitride, aluminum nitride and their alloys, as well as for the production of transistors with high mobility of electrons and also for creation of blue and ultraviolet light emitters (light-emitted diodes and laser diodes. The result of analysis shows that increasing of the growth temperature up to 2300 K allows carry out sublimation epitaxy of thin layers of aluminum nitride and its solid solution.

  4. The thermal power of aluminum nitride at temperatures between 1350 and 1650 deg C in argon and nitrogen atmospheres. Ph.D. Thesis - Rhine-Westphalia High School at Aachen

    Science.gov (United States)

    Fischer, W. A.; Schuh, B.

    1978-01-01

    The test apparatus for measuring the thermal voltage of aluminum nitride for temperature differences of up to + or - 60 C between 1350 and 1650 C is described. The thermal power and its homogeneous proportion are determined and the heat transfer of the migration ions resulting from the homogeneous thermal power is calculated. The conduction mechanism in aluminum nitride is discussed.

  5. Low temperature sintering and performance of aluminum nitride/borosilicate glass

    Institute of Scientific and Technical Information of China (English)

    Hong-sheng ZHAO; Lei CHEN; Nian-zi GAO; Kai-hong ZHANG; Zi-qiang LI

    2009-01-01

    Aluminum nitride (AlN)/borosilicate glass composites were prepared by the tape casting process and hot-press sin-tered at 950 ℃ with AlN and SiO2-B2O3-ZnO-Al2O3-Li2O glass as starting materials. We characterized and analyzed the variation of the microstructure, bulk density, porosity, dielectric constant, thermal conductivity and thermal expansion coefficient (TEC) of the ceramic samples as a function of AlN content. Results show that AlN and SiO2-B2O3-ZnO-Al2O3-Li2O glass can be sintered at 950 ℃, and ZnAl2O4 and Zn2SiO4 phase precipitated to form glass-ceramic. The performance of the ceramic samples was de-termined by the composition and bulk density of the composites. Lower AlN content was found redounding to liquid phase sin-tering, and higher bulk density of composites can be accordingly obtained. With the increase of porosity, corresponding decreases were located in the dielectric constant, thermal conductivity and TEC of the ceramic samples. When the mass fraction of AlN was 40%, the ceramic samples possessed a low dielectric constant (4.5~5.0), high thermal conductivity (11.6 W/(m·K)) and a proper TEC (3.0×10K-1, which matched that of silicon). The excellent performance makes this kind of low temperature co-fired ce-ramic a promising candidate for application in the micro-electronics packaging industry.

  6. Deposition and characterization of amorphous aluminum nitride thin films for a gate insulator

    Energy Technology Data Exchange (ETDEWEB)

    Oikawa, H.; Akiyama, R. [Institute of Materials Science, University of Tsukuba,1-1-1 Tennoudai, Tsukuba, 305-8573 (Japan); Tsukuba Nano-Tech Human Resource Development Program, Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennoudai, Tsukuba, 305-8571 (Japan); Kanazawa, K. [Institute of Materials Science, University of Tsukuba,1-1-1 Tennoudai, Tsukuba, 305-8573 (Japan); Kuroda, S., E-mail: kuroda@ims.tsukuba.ac.jp [Institute of Materials Science, University of Tsukuba,1-1-1 Tennoudai, Tsukuba, 305-8573 (Japan); Tsukuba Nano-Tech Human Resource Development Program, Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennoudai, Tsukuba, 305-8571 (Japan); Harayama, I. [Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennoudai, Tsukuba, 305-8573 (Japan); Tsukuba Nano-Tech Human Resource Development Program, Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennoudai, Tsukuba, 305-8571 (Japan); Nagashima, K. [Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennoudai, Tsukuba, 305-8573 (Japan); Sekiba, D. [Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennoudai, Tsukuba, 305-8573 (Japan); Tandem Accelerator Complex, Research Facility Center for Science and Technology, University of Tsukuba, 1-1-1 Tennoudai, Tsukuba, 305-8577 (Japan); Ashizawa, Y.; Tsukamoto, A.; Nakagawa, K. [College of Science and Technology, Nihon University, 7-24-1 Narashinodai, Funabashi, 274-8501 (Japan); Ota, N. [Tsukuba Nano-Tech Human Resource Development Program, Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennoudai, Tsukuba, 305-8571 (Japan)

    2015-01-01

    Thin films of aluminum nitride (AlN) fabricated by reactive deposition were characterized in order to examine the electrical insulation properties suitable for a gate insulator. For a series of AlN films deposited with a variation of the amount of Al flux at a fixed N flux, compositional and chemical analyses were performed using X-ray photoelectron spectroscopy (XPS) and elastic recoil detection analysis (ERDA). Combined with the result of current-voltage (I-V) measurement, it is found that the insulation properties are correlated with the compositional ratio between Al and N estimated by the ERDA measurement; a good electrical insulation with a minimal leak current of the order of 10{sup -9} A/cm{sup 2} at a high electric field 1 MV/cm is achieved in the film of nearly stoichiometric compositional ratio of Al/N, in which the dominance of the Al-N bonding state is confirmed in the XPS measurement. On the other hand, the incorporation of oxygen, probably caused by the surface oxidization due to the exposure to the air, has little effect on the electrical properties. - Highlights: • AlN thin films deposited by reactive deposition were characterized for gate insulator. • A good electrical insulation was achieved at nearly stoichiometric composition. • The effects of oxygen incorporation and Al-N bonding state were also investigated. • A minimum leak current density as low as 10{sup -9}A/cm{sup 2} at 1MV/cm was achieved.

  7. Precipitation of aluminum nitride in a high strength maraging steel with low nitrogen content

    Energy Technology Data Exchange (ETDEWEB)

    Jeanmaire, G., E-mail: guillaume.jeanmaire@univ-lorraine.fr [Institut Jean Lamour, UMR 7198 CNRS-Université de Lorraine, 54011 Nancy Cedex (France); Aubert and Duval, BP1, 63770 Les Ancizes (France); Dehmas, M.; Redjaïmia, A. [Institut Jean Lamour, UMR 7198 CNRS-Université de Lorraine, 54011 Nancy Cedex (France); Puech, S. [Aubert and Duval, BP1, 63770 Les Ancizes (France); Fribourg, G. [Snecma Gennevilliers, 171 Boulevard de Valmy-BP 31, 92702 Colombes (France)

    2014-12-15

    In the present work, aluminum nitride (AlN) precipitation was investigated in a X23NiCoCrMoAl13-6-3 maraging steel with low nitrogen content (wt.% N = 5.5 ppm). A reliable and robust automatic method by scanning electron microscopy observations coupled with energy dispersive X-ray spectroscopy was developed for the quantification of AlN precipitates. The first stage was to identify the solvus temperature and to develop a heat treatment able to dissolve the AlN precipitates. The experimental determination of equilibrium conditions and solvus temperature show good agreement with ThermoCalc® simulation. Then, from this AlN-free state, the cooling rate, isothermal holding time and temperature were the subject of an intensive investigation in the austenite region of this maraging steel. In spite of the high temperatures used during heat treatments, the growth kinetic of the largest AlN precipitates (> 1 μm) is slow. The cooling rate has a major effect on the size and the number density of AlN due to a higher driving force for nucleation at low temperatures. At last, quenching prior to isothermal annealing at high temperatures leads to fine and dense AlN precipitation, resulting from the martensite to austenite transformation. Experimental results will be discussed and compared with kinetic data obtained with the mobility database MobFe2 implemented in Dictra® software. - Highlights: • Slow dissolution kinetic of AlN precipitates due to both their large size and small chemical driving force • Significant effects of cooling rate prior isothermal heat treatment, holding time and temperature on AlN precipitation • Size of AlN precipitates can be reduced by quenching prior isothermal holding. • Fine precipitation of AlN related to the α → γ transformation.

  8. Observation of band gaps in the gigahertz range and deaf bands in a hypersonic aluminum nitride phononic crystal slab

    Science.gov (United States)

    Gorisse, M.; Benchabane, S.; Teissier, G.; Billard, C.; Reinhardt, A.; Laude, V.; Defaÿ, E.; Aïd, M.

    2011-06-01

    We report on the observation of elastic waves propagating in a two-dimensional phononic crystal composed of air holes drilled in an aluminum nitride membrane. The theoretical band structure indicates the existence of an acoustic band gap centered around 800 MHz with a relative bandwidth of 6.5% that is confirmed by gigahertz optical images of the surface displacement. Further electrical measurements and computation of the transmission reveal a much wider attenuation band that is explained by the deaf character of certain bands resulting from the orthogonality of their polarization with that of the source.

  9. Reactive Plasma-Sprayed Aluminum Nitride-Based Coating Thermal Conductivity

    Science.gov (United States)

    Shahien, Mohammed; Yamada, Motohiro; Fukumoto, Masahiro; Egota, Kazumi; Okamoto, Kenji

    2015-12-01

    Recently, thick aluminum nitride/alumina (AlN/Al2O3) composite coatings were successfully fabricated through the reactive plasma spraying of fine Al2O3/AlN mixture in the N2/H2 atmospheric plasma. The coatings consist of AlN, Al5O6N, γ-Al2O3, and α-Al2O3 phases. This study will evaluate the thermal conductivity of these complicated plasma-sprayed coatings and optimize the controlling aspects. Furthermore, the influence of the process parameters on the coatings thermal conductivity will be investigated. The fabricated coatings showed very low thermal conductivity (2.43 W/m K) compared to the AlN sintered compacts. It is attributed to the phase composition of the fabricated coatings, oxide content, and porosity. The presence of Al2O3, Al5O6N and the high coating porosity decreased its thermal conductivity. The presence of oxygen in the AlN lattice creates Al vacancies which lead to phonon scattering and therefore suppressed the thermal conductivity. The formation of γ-Al2O3 phase in the coating leads to further decrease in its conductivity, due to its lower density compared to the α-phase. Moreover, the high porosity of the coating strongly suppressed the conductivity. This is due to the complicated microstructure of plasma spray coatings (splats, porosity, and interfaces, particularly in case of reactive spray process), which obviously lowered the conductivity. Furthermore, the measured coating density was lower than the AlN value and suppressed the coating conductivity. In addition, the spraying parameter showed a varied effect on the coating phase composition, porosity, density, and therefore on its conductivity. Although the N2 gas flow improved the nitride content, it suppressed the thermal conductivity gradually. It is attributed to the further increase in the porosity and further decrease in the density of the coatings with the N2 gas. Furthermore, increasing the arc did not show a significant change on the coating thermal conductivity. On the other hand

  10. Synthesis of aluminum nitride powders from a plasma-assisted ball milled precursor through carbothermal reaction

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Zhi-jie [Key Lab of Materials Modification (Dalian University of Technology), Ministry of Education, Dalian 116024 (China); Dai, Le-yang [Marine Engineering Institute, Jimei University, Xiamen 361021 (China); Yang, De-zheng; Wang, Sen [Key Lab of Materials Modification (Dalian University of Technology), Ministry of Education, Dalian 116024 (China); Zhang, Bao-jian [Marine Engineering Institute, Jimei University, Xiamen 361021 (China); Wang, Wen-chun, E-mail: wangwenc@dlut.edu.cn [Key Lab of Materials Modification (Dalian University of Technology), Ministry of Education, Dalian 116024 (China); Cheng, Tie-han [Pinggao Group Co. Ltd., State Grid Corporation of China, Pingdingshan 467000 (China)

    2015-01-15

    Highlights: • A novel and high efficiency synthesizing AlN powders method combining mechanical ball milling and DBDP has been developed. • The particle size, the crystallite size, the lattice distortion, the morphology of Al{sub 2}O{sub 3} powders, and the AlN conversion rate are investigated and compared under the ball milled Al{sub 2}O{sub 3} powders with DBDP and without DBDP. • The ball milled Al{sub 2}O{sub 3} powders with DBDP have small spherical structure morphology with very fine particles size and high specific surface area, which result in a higher chemical efficiency and a higher AlN conversion rate at lower thermal temperature. - Abstract: In this paper, aluminum nitride (AlN) powers have been produced with a novel and high efficiency method by thermal annealing at 1100–1600 °C of alumina (Al{sub 2}O{sub 3}) powders which were previously ball milled for various time up to 40 h with and without the assistant of dielectric barrier discharge plasma (DBDP). The ball milled Al{sub 2}O{sub 3} powders with DBDP and without DBDP and the corresponding synthesized AlN powers are characterized by X-ray diffraction, scanning electron microscope, and transmission electron microscopy. From the characteristics of the ball milled Al{sub 2}O{sub 3} powders with DBDP and without DBDP, it can be seen that the ball milled Al{sub 2}O{sub 3} powders with DBDP have small spherical structure morphology with very fine particles size and high specific surface area, which result in a higher chemical efficiency and a higher AlN conversion rate at lower thermal temperature. Meanwhile, the synthesized AlN powders can be known as hexagonal AlN with fine crystal morphology and irregular lump-like structure, and have uniform distribution with the average particle size of about between 500 nm and 1000 nm. This provides an important method for fabricating ultra fine powders and synthesizing nitrogen compounds.

  11. Modification and characterization of aluminum nitride surfaces for an acoustic wave biosensor

    Science.gov (United States)

    Rosenberger, Leland W.

    Aluminum nitride (AlN) is a piezoelectric material that is being developed for use in a surface acoustic wave sensor for the detection of bacteria in fluid media. An AlN film is deposited on a sapphire or silicon substrate. After conductor deposition, an electronic signal is applied across the device and the signal is modified by changes in the mass immobilized on the sensor surface. Bacteria are immobilized on the surface by antibodies specific to the bacterial species. The problem addressed in this dissertation is how to form a bridge between the inorganic surface and the antibodies. The approach used is to form a new chemical layer on the AlN by using silanes. Functional groups on the silane surface can then be used as anchor points for the antibodies. This approach was carried out in three steps: (1) characterize the AlN surface, (2) explore four surface treatment methods that prepare the AlN surface for silanization and (3) silanize the resulting surface. AlN films were deposited by a Plasma Source Molecular Beam Epitaxy method. The films were characterized by RHEED, X-ray diffraction, air/water contact angle, atomic force microscopy (AFM), ellipsometry and X-ray photoelectron spectroscopy (XPS). The four surface treatment methods explored were: immersion in boiling water, exposure to laser light, immersion in piranha solution and treatment with plasma. Samples were characterized by contact angle, AFM and XPS. Plasma treatment was preferred because it prepared the surface most effectively, without any loss of sub-surface AlN. Samples of AlN were silanized with two types of silane, along with silicon controls. Samples were characterized by contact angle, AFM and XPS. The effectiveness of silanes on AlN was equal to or somewhat less than that observed on silicon. AlN samples were also co-deposited with two different silanes and then the end group on one of the silanes was chemically modified. This demonstrated that the density of functional groups on the

  12. Application of a new composite cubic-boron nitride gasket assembly for high pressure inelastic x-ray scattering studies of carbon related materials

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Lin; Yang, Wenge; Xiao, Yuming; Liu, Bingbing; Chow, Paul; Shen, Guoyin; Mao, Wendy L.; Mao, Ho-kwang (Jilin); (Stanford); (CIW)

    2011-09-15

    We have developed a new composite cubic-boron nitride (c-BN) gasket assembly for high pressure diamond anvil cell studies, and applied it to inelastic x-ray scattering (IXS) studies of carbon related materials in order to maintain a larger sample thickness and avoid the interference from the diamond anvils. The gap size between the two diamond anvils remained {approx}80 {micro}m at 48.0 GPa with this new composite c-BN gasket assembly. The sample can be located at the center of the gap, {approx}20 {micro}m away from the surface of both diamond anvils, which provides ample distance to separate the sample signal from the diamond anvils. The high pressure IXS of a solvated C{sub 60} sample was studied up to 48 GPa, and a pressure induced bonding transition from sp{sup 2} to sp{sup 3} was observed at 27 GPa.

  13. Application of a new composite cubic-boron nitride gasket assembly for high pressure inelastic x-ray scattering studies of carbon related materials

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Lin; Yang, Wenge; Xiao, Yuming; Liu, Bingbing; Chow, Paul; Shen, Guoyin; Mao, Wendy L.; Mao, Ho Kwang

    2011-01-01

    We have developed a new composite cubic-boron nitride (c-BN) gasket assembly for high pressurediamond anvil cell studies, and applied it to inelastic x-ray scattering (IXS) studies of carbon related materials in order to maintain a larger sample thickness and avoid the interference from the diamond anvils. The gap size between the two diamond anvils remained ~80 μm at 48.0 GPa with this new composite c-BN gasket assembly. The sample can be located at the center of the gap, ~20 μm away from the surface of both diamond anvils, which provides ample distance to separate the sample signal from the diamond anvils. The high pressure IXS of a solvated C₆₀ sample was studied up to 48 GPa, and a pressure induced bonding transition from sp² to sp³ was observed at 27 GPa.

  14. Application of a new composite cubic-boron nitride gasket assembly for high pressure inelastic x-ray scattering studies of carbon related materials.

    Science.gov (United States)

    Wang, Lin; Yang, Wenge; Xiao, Yuming; Liu, Bingbing; Chow, Paul; Shen, Guoyin; Mao, Wendy L; Mao, Ho-kwang

    2011-07-01

    We have developed a new composite cubic-boron nitride (c-BN) gasket assembly for high pressure diamond anvil cell studies, and applied it to inelastic x-ray scattering (IXS) studies of carbon related materials in order to maintain a larger sample thickness and avoid the interference from the diamond anvils. The gap size between the two diamond anvils remained ~80 μm at 48.0 GPa with this new composite c-BN gasket assembly. The sample can be located at the center of the gap, ~20 μm away from the surface of both diamond anvils, which provides ample distance to separate the sample signal from the diamond anvils. The high pressure IXS of a solvated C(60) sample was studied up to 48 GPa, and a pressure induced bonding transition from sp(2) to sp(3) was observed at 27 GPa.

  15. Cubic and hexagonal boron-nitride (c-BN/h-BN) thin films deposited in situ by r.f. magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Caicedo, J.M.; Zambrano, G.; Baca, E.; Moran, O.; Prieto, P. [Departamento de Fisica, Universidad del Valle, A.A. 25360 Cali (Colombia); Bejarano, G. [Laboratorio de Recubrimientos Duros, CDT-ASTIN SENA, Cali (Colombia)

    2005-07-01

    Cubic boron-nitride (c-BN)/hexagonal boron nitride (h-BN) thin films were grown in situ on (100) oriented silicon substrates by r.f. (13.56 MHz) magnetron sputtering technique. In order to obtain the highest fraction of the c-BN phase, a negative d.c bias voltage, varying from 0 to -200 V was applied to the substrate during deposition. Another set of boron nitride thin films was deposited in situ on (100) oriented silicon substrates under r.f. bias voltage. The substrate holder was biased from 0 to -350 V by connecting such to an auxiliary r.f. generator (operated at 13.56 MHz). Films were characterized by Fourier Transformed Infrared Spectroscopy (FTIR) and Atomic Force Microscope (AFM). Well-defined peaks at 787 cm{sup -1}, 1100 cm{sup -1} and 1387 cm{sup -1}, corresponding to the 2{sub Au} (out-plane bending of B-N-B bond) h-BN vibration mode, the F2 (stretching) c-BN Transversal Optical (TO) mode and the E{sub 1u} (in-plane stretching of B-N bond) vibration mode of the h-BN, respectively, were observed in the FTIR spectra. A maximal fraction of the c-BN phase close to 85% was obtained under a bias voltage of -150 V at substrate temperature of 300 C and a total pressure of 4 x 10{sup -2} mbar. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  16. Simultaneous direct determination of aluminum, calcium and iron in silicon carbide and silicon nitride powders by slurry-sampling graphite furnace AAS.

    Science.gov (United States)

    Minami, Hirotsugu; Yada, Masako; Yoshida, Tomomi; Zhang, Qiangbin; Inoue, Sadanobu; Atsuya, Ikuo

    2004-03-01

    A fast and accurate analytical method was established for the simultaneous direct determination of aluminum, calcium and iron in silicon carbide and silicon nitride powders by graphite furnace atomic absorption spectrometry using a slurry sampling technique and a Hitachi Model Z-9000 atomic absorption spectrometer. The slurry samples were prepared by the ultrasonication of silicon carbide or silicon nitride powders with 0.1 M nitric acid. Calibration curves were prepared by using a mixed standard solution containing aluminum, calcium, iron and 0.1 M nitric acid. The analytical results of the proposed method for aluminum, calcium and iron in silicon carbide and silicon nitride reference materials were in good agreement with the reference values. The detection limits for aluminum, calcium and iron were 0.6 microg/g, 0.15 microg/g and 2.5 microg/g, respectively, in solid samples, when 200 mg of powdered samples were suspended in 20 ml of 0.1 M nitric acid and a 10 microl portion of the slurry sample was then measured. The relative standard deviation of the determination of aluminum, calcium and iron was 5 - 33%.

  17. Investigation of wear and tool life of coated carbide and cubic boron nitride cutting tools in high speed milling

    Directory of Open Access Journals (Sweden)

    Pawel Twardowski

    2015-06-01

    Full Text Available The objective of the investigation was analysis of the wear of milling cutters made of sintered carbide and of boron nitride. The article presents the life period of the cutting edges and describes industrial conditions of the applicability of tools made of the materials under investigation. Tests have been performed on modern toroidal and ball-end mill cutters. The study has been performed within a production facility in the technology of high speed machining of 55NiCrMoV6 and X153CrMoV12 hardened steel. The analysed cutting speed is a parameter which significantly influences the intensity of heat generated in the cutting zone. Due to the wear characteristics, two areas of applicability of the analysed tools have been distinguished. For vc  ≤ 300 m/min, sintered carbide edges are recommended; for vc  > 500 m/min, boron nitride edges. For 300 ≤ vc  ≤ 500 m/min, a transition area has been observed. It has been proved that the application of sintered carbide edges is not economically justified above certain cutting speed.

  18. Influence of laser pulse frequency on the microstructure of aluminum nitride thin films synthesized by pulsed laser deposition

    Science.gov (United States)

    Antonova, K.; Duta, L.; Szekeres, A.; Stan, G. E.; Mihailescu, I. N.; Anastasescu, M.; Stroescu, H.; Gartner, M.

    2017-02-01

    Aluminum Nitride (AlN) thin films were synthesized on Si (100) wafers at 450 °C by pulsed laser deposition. A polycrystalline AlN target was multipulsed irradiated in a nitrogen ambient, at different laser pulse repetition rate. Grazing Incidence X-Ray Diffraction and Atomic Force Microscopy analyses evidenced nanocrystallites with a hexagonal lattice in the amorphous AlN matrix. The thickness and optical constants of the layers were determined by infrared spectroscopic ellipsometry. The optical properties were studied by Fourier Transform Infrared reflectance spectroscopy in polarised oblique incidence radiation. Berreman effect was observed around the longitudinal phonon modes of the crystalline AlN component. Angular dependence of the A1LO mode frequency was analysed and connected to the orientation of the particles' optical axis to the substrate surface normal. The role of the laser pulse frequency on the layers' properties is discussed on this basis.

  19. A Titanium Nitride Absorber for Controlling Optical Crosstalk in Horn-Coupled Aluminum LEKID Arrays for Millimeter Wavelengths

    CERN Document Server

    McCarrick, H; Jones, G; Johnson, B R; Ade, P A R; Bradford, K; Bryan, S; Cantor, R; Che, G; Day, P; Doyle, S; Leduc, H; Limon, M; Mauskopf, P; Miller, A; Mroczkowski, T; Tucker, C; Zmuidzinas, J

    2015-01-01

    We discuss the design and measured performance of a titanium nitride (TiN) mesh absorber we are developing for controlling optical crosstalk in horn-coupled lumped-element kinetic inductance detector arrays for millimeter-wavelengths. This absorber was added to the fused silica anti-reflection coating attached to previously-characterized, 20-element prototype arrays of LEKIDs fabricated from thin-film aluminum on silicon substrates. To test the TiN crosstalk absorber, we compared the measured response and noise properties of LEKID arrays with and without the TiN mesh. For this test, the LEKIDs were illuminated with an adjustable, incoherent electronic millimeter-wave source. Our measurements show that the optical crosstalk in the LEKID array with the TiN absorber is reduced by 66\\% on average, so the approach is effective and a viable candidate for future kilo-pixel arrays.

  20. Synthesis of aluminum nitride nanoparticles by a facile urea glass route and influence of urea/metal molar ratio

    Energy Technology Data Exchange (ETDEWEB)

    Gao, Zhifang; Wan, Yizao [School of Materials Science and Engineering, and Tianjin Key Laboratory of Composite and Functional Materials, Tianjin University, Tianjin 300072 (China); Xiong, Guangyao [School of Mechanical and Electrical Engineering, East China Jiaotong University, Nanchang, Jiangxi 330013 (China); Guo, Ruisong [School of Materials Science and Engineering, and Tianjin Key Laboratory of Composite and Functional Materials, Tianjin University, Tianjin 300072 (China); Luo, Honglin, E-mail: hlluo@tju.edu.cn [School of Materials Science and Engineering, and Tianjin Key Laboratory of Composite and Functional Materials, Tianjin University, Tianjin 300072 (China)

    2013-09-01

    Attention toward nanosized aluminum nitride (AlN) was rapidly increasing due to its physical and chemical characteristics. In this work, nanocrystalline AlN particles were prepared via a simple urea glass route. The effect of the urea/metal molar ratio on the crystal structure and morphology of nanocrystalline AlN particles was studied using X-ray powder diffraction (XRD), scanning electron microscope (SEM) and transmission electron microscope (TEM). The results revealed that the morphology and the crystal structure of AlN nanoparticles could be controlled by adjusting the urea/metal ratio. Furthermore, a mixture of Al{sub 2}O{sub 3} and h-AlN was detected at the urea/metal molar ratio of 4 due to the inadequate urea content. With increasing the molar ratio, the pure h-AlN was obtained. In addition, the nucleation and growth mechanisms of AlN nanocrystalline were proposed.

  1. Electrostatic Self-Assembly of Diamond Nanoparticles onto Al- and N-Polar Sputtered Aluminum Nitride Surfaces

    Directory of Open Access Journals (Sweden)

    Taro Yoshikawa

    2016-11-01

    Full Text Available Electrostatic self-assembly of diamond nanoparticles (DNPs onto substrate surfaces (so-called nanodiamond seeding is a notable technique, enabling chemical vapor deposition (CVD of nanocrystalline diamond thin films on non-diamond substrates. In this study, we examine this technique onto differently polarized (either Al- or N-polar c-axis oriented sputtered aluminum nitride (AlN film surfaces. This investigation shows that Al-polar films, as compared to N-polar ones, obtain DNPs with higher density and more homogeneously on their surfaces. The origin of these differences in density and homogeneity is discussed based on the hydrolysis behavior of AlN surfaces in aqueous suspensions.

  2. Adhesion measurements and chemical and microstructural characterization at interfaces of titanium nitride and titanium aluminum nitride coatings on stainless steel, inconel and titanium alloys

    Science.gov (United States)

    James, Robert Dallas

    To assess the adhesion of nitride coatings on metal alloys, Ti 6Al-4V, 17-4 PH stainless steel and Inconel 718 alloy substrates were coated with titanium nitride (TiN) using both cathodic arc and electron beam evaporation. Titanium aluminum nitride ((Ti,Al)N) was also deposited using cathodic arc evaporation. X-ray photoelectron, Auger electron, and energy dispersive x-ray spectroscopies were used in tandem with cross-sectional transmission electron microscopy to analyze the coatings and the coating-substrate interfaces. The interfaces were found to be abrupt with a thin layer of W contamination located between the substrate and the Ti interlayer, deposited to improve adhesion, on electron beam evaporated samples. Metallic macroparticles up to two microns in diameter were observed in cathodic arc evaporated coatings. Residual stress analysis of the coatings revealed the presence of biaxial compressive residual stresses in all coatings. Residual stresses increased for coating-substrate systems with a larger mismatch between the coefficients of thermal expansion for the coating and the substrate. Scratch tests of the coatings revealed lower critical load values for coatings on Ti 6Al-4V due to the lower hardness of the substrate alloy relative to the stainless steel and Inconel alloys. The scratch test is a common method for evaluating adhesion of a coating to its substrate; however, this technique is not well understood due to complex loading of specimen as coating is removed. Plate impact spallation, is a more uncommon method for evaluating adhesion, but the advantage of this technique is that the interface is subjected to purely tensile loading. During plate impact spallation, the interfaces of the coated samples were loaded in tension using a high speed shock wave which caused spallation either at the interface, in the coating or in the metal. Failure in cathodic arc deposited coatings occurred in the form of isolated spallation craters located within the

  3. Synthesis and characterization of molybdenum/phenolic resin composites binding with aluminum nitride particles for diamond cutters

    Science.gov (United States)

    Lin, Chun-Te; Lee, Hsun-Tsing; Chen, Jem-Kun

    2013-11-01

    Novolac-type bisphenol-F based molybdenum-phenolic resins/silane-modified aluminum nitride (Mo-BPF/m-AlN) composites were successfully prepared. In the preparation process, molybdate reacted with bisphenol-F based phenolic resins (BPF) to form a low cross-linked Mo-BPF with new Mosbnd O bonds which were confirmed by the FTIR and XPS spectra. Simultaneously, a special silane-modified aluminum nitride (m-AlN) was prepared with 3-aminopropyltriethoxysilane (APTES) modifier. Then, this m-AlN was fully mixed with Mo-BPF to form Mo-BPF/m-AlN which can be further cured with hexamethylenetetramine at 200 °C. The structure and characterization of BPF, Mo-BPF and Mo-BPF/m-AlN were determined by using FTIR, DSC, DMA, TGA, SEM, mechanical properties and contact angle measurements. SEM photographs show that m-AlN particles are uniformly distributed in the Mo-BPF/m-AlN composites. Also there are no gaps or void between m-AlN and Mo-BPF phases, which implies a strong physical bonding between the two phases. The glass transition temperature, thermal resistance, flexural strength, and hardness of Mo-BPF are respectively higher than those of BPF. This is due to the presence of Mosbnd O cross-linking bonds in Mo-BPF. When the m-AlN was additionally incorporated into Mo-BPF, the well-dispersed and well-adhered m-AlN can further promote all the above-mentioned properties of the composites. Typically, the glass transition temperature, decomposition temperature at 5% weight loss and flexural strength of Mo-BPF/m-AlN are 245 °C, 428 °C and 82.7 MPa respectively, which are much higher than the corresponding values of 184 °C, 358 °C and 58.2 MPa for BPF. In addition, the hygroscopic nature of BPF can be inhibited by treating with molybdate or incorporating with m-AlN. This is due to that the m-AlN is hydrophobic and Mosbnd O groups in Mo-BPF are more hydrophobic than OH groups in BPF. Furthermore, Mo-BPF/m-AlN was compared with BPF in the performance as a binder for diamond cutting

  4. Synthesis and characterization of molybdenum/phenolic resin composites binding with aluminum nitride particles for diamond cutters

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Chun-Te [Department of Polymer Engineering, National Taiwan University of Science and Technology, 43, Sec 4, Keelung Rd, Taipei 106, Taiwan (China); Lee, Hsun-Tsing [R and D Center for the Applications of Nanomaterials and Electro-information Technology, Vanung University, Chung-Li, Tao-Yuan, Taiwan (China); Chen, Jem-Kun, E-mail: jkchen@mail.ntust.edu.tw [Department of Polymer Engineering, National Taiwan University of Science and Technology, 43, Sec 4, Keelung Rd, Taipei 106, Taiwan (China)

    2013-11-01

    Novolac-type bisphenol-F based molybdenum–phenolic resins/silane-modified aluminum nitride (Mo–BPF/m-AlN) composites were successfully prepared. In the preparation process, molybdate reacted with bisphenol-F based phenolic resins (BPF) to form a low cross-linked Mo–BPF with new Mo-O bonds which were confirmed by the FTIR and XPS spectra. Simultaneously, a special silane-modified aluminum nitride (m-AlN) was prepared with 3-aminopropyltriethoxysilane (APTES) modifier. Then, this m-AlN was fully mixed with Mo–BPF to form Mo–BPF/m-AlN which can be further cured with hexamethylenetetramine at 200 °C. The structure and characterization of BPF, Mo–BPF and Mo–BPF/m-AlN were determined by using FTIR, DSC, DMA, TGA, SEM, mechanical properties and contact angle measurements. SEM photographs show that m-AlN particles are uniformly distributed in the Mo–BPF/m-AlN composites. Also there are no gaps or void between m-AlN and Mo–BPF phases, which implies a strong physical bonding between the two phases. The glass transition temperature, thermal resistance, flexural strength, and hardness of Mo–BPF are respectively higher than those of BPF. This is due to the presence of Mo-O cross-linking bonds in Mo–BPF. When the m-AlN was additionally incorporated into Mo–BPF, the well-dispersed and well-adhered m-AlN can further promote all the above-mentioned properties of the composites. Typically, the glass transition temperature, decomposition temperature at 5% weight loss and flexural strength of Mo–BPF/m-AlN are 245 °C, 428 °C and 82.7 MPa respectively, which are much higher than the corresponding values of 184 °C, 358 °C and 58.2 MPa for BPF. In addition, the hygroscopic nature of BPF can be inhibited by treating with molybdate or incorporating with m-AlN. This is due to that the m-AlN is hydrophobic and Mo-O groups in Mo–BPF are more hydrophobic than OH groups in BPF. Furthermore, Mo–BPF/m-AlN was compared with BPF in the performance as a binder for

  5. Oxide-cladding aluminum nitride photonic crystal slab: Design and investigation of material dispersion and fabrication induced disorder

    Energy Technology Data Exchange (ETDEWEB)

    Melo, E. G., E-mail: emerdemelo@usp.br; Alvarado, M. A.; Carreño, M. N. P.; Alayo, M. I. [Electronic Systems Engineering Department, University of São Paulo, CEP 05508-010 São Paulo, SP (Brazil); Carvalho, D. O. [UNESP - São Paulo State University, CEP 13874-149 São João da Boa Vista, SP (Brazil); Ferlauto, A. S. [Department of Physics, Federal University of Minas Gerais, CEP 31270-901 Belo Horizonte, MG (Brazil)

    2016-01-14

    Photonic crystal slabs with a lower-index material surrounding the core layer are an attractive choice to circumvent the drawbacks in the fabrication of membranes suspended in air. In this work we propose a photonic crystal (PhC) slab structure composed of a triangular pattern of air holes in a multilayer thin film of aluminum nitride embedded in silicon dioxide layers designed for operating around 450 nm wavelengths. We show the design of an ideal structure and analyze the effects of material dispersion based on a first-order correction perturbation theory approach using dielectric functions obtained by experimental measurements of the thin film materials. Numerical methods were used to investigate the effects of fabrication induced disorder of typical nanofabrication processes on the bandgap size and spectral response of the proposed device. Deviation in holes radii and positions were introduced in the proposed PhC slab model with a Gaussian distribution profile. Impacts of slope in holes sidewalls that might result from the dry etching of AlN were also evaluated. The results show that for operation at the midgap frequency, slope in holes sidewalls is more critical than displacements in holes sizes and positions.

  6. Improving the Microstructure and Electrical Properties of Aluminum Induced Polysilicon Thin Films Using Silicon Nitride Capping Layer

    Directory of Open Access Journals (Sweden)

    Min-Hang Weng

    2014-01-01

    Full Text Available We investigated the capping layer effect of SiNx (silicon nitride on the microstructure, electrical, and optical properties of poly-Si (polycrystalline silicon prepared by aluminum induced crystallization (AIC. The primary multilayer structure comprised Al (30 nm/SiNx (20 nm/a-Si (amorphous silicon layer (100 nm/ITO coated glass and was then annealed in a low annealing temperature of 350°C with different annealing times, 15, 30, 45, and 60 min. The crystallization properties were analyzed and verified by X-ray diffraction (XRD and Raman spectra. The grain growth was analyzed via optical microscope (OM and scanning electron microscopy (SEM. The improved electrical properties such as Hall mobility, resistivity, and dark conductivity were investigated by using Hall and current-voltage (I-V measurements. The results show that the amorphous silicon film has been effectively induced even at a low temperature of 350°C and a short annealing time of 15 min and indicate that the SiNx capping layer can improve the grain growth and reduce the metal content in the induced poly-Si film. It is found that the large grain size is over 20 μm and the carrier mobility values are over 80 cm2/V-s.

  7. Correlations between optical properties, microstructure, and processing conditions of Aluminum nitride thin films fabricated by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Baek, Jonghoon [Department of Electrical and Computer Engineering, Texas Materials Institute, University of Texas at Austin, Austin, Texas 78712 (United States)]. E-mail: jhoon6@hotmail.com; Ma, James [Materials Science and Engineering Program, Texas Materials Institute, University of Texas at Austin, Austin, Texas 78712 (United States); Becker, Michael F. [Department of Electrical and Computer Engineering, Texas Materials Institute, University of Texas at Austin, Austin, Texas 78712 (United States); Keto, John W. [Department of Physics, Texas Materials Institute, University of Texas at Austin, Austin, Texas 78712 (United States); Kovar, Desiderio [Department of Mechanical Engineering, Texas Materials Institute, University of Texas at Austin, Austin, Texas 78712 (United States)

    2007-06-25

    Aluminum nitride (AlN) films were deposited using pulsed laser deposition (PLD) onto sapphire (0001) substrates with varying processing conditions (temperature, pressure, and laser fluence). We have studied the dependence of optical properties, structural properties and their correlations for these AlN films. The optical transmission spectra of the produced films were measured, and a numerical procedure was applied to accurately determine the optical constants for films of non-uniform thickness. The microstructure and texture of the films were studied using various X-ray diffraction techniques. The real part of the refractive index was found to not vary significantly with processing parameters, but absorption was found to be strongly dependent on the deposition temperature and the nitrogen pressure in the deposition chamber. We report that low optical absorption, textured polycrystalline AlN films can be produced by PLD on sapphire substrates at both low and high laser fluence using a background nitrogen pressure of 6.0 x 10{sup -2} Pa (4.5 x 10{sup -4} Torr) of 99.9% purity.

  8. Low-loss, silicon integrated, aluminum nitride photonic circuits and their use for electro-optic signal processing.

    Science.gov (United States)

    Xiong, Chi; Pernice, Wolfram H P; Tang, Hong X

    2012-07-11

    Photonic miniaturization requires seamless integration of linear and nonlinear optical components to achieve passive and active functions simultaneously. Among the available material systems, silicon photonics holds immense promise for optical signal processing and on-chip optical networks. However, silicon is limited to wavelengths above 1.1 μm and does not provide the desired lowest order optical nonlinearity for active signal processing. Here we report the integration of aluminum nitride (AlN) films on silicon substrates to bring active functionalities to chip-scale photonics. Using CMOS-compatible sputtered thin films we fabricate AlN-on-insulator waveguides that exhibit low propagation loss (0.6 dB/cm). Exploiting AlN's inherent Pockels effect we demonstrate electro-optic modulation up to 4.5 Gb/s with very low energy consumption (down to 10 fJ/bit). The ultrawide transparency window of AlN devices also enables high speed modulation at visible wavelengths. Our low cost, wideband, carrier-free photonic circuits hold promise for ultralow power and high-speed signal processing at the microprocessor chip level.

  9. Low-loss, silicon integrated, aluminum nitride photonic circuits and their use for electro-optic signal processing

    CERN Document Server

    Xiong, Chi; Tang, Hong X

    2014-01-01

    Photonic miniaturization requires seamless integration of linear and nonlinear optical components to achieve passive and active functions simultaneously. Among the available material systems, silicon photonics holds immense promise for optical signal processing and on-chip optical networks. However, silicon is limited to wavelengths above 1100 nm and does not provide the desired lowest order optical nonlinearity for active signal processing. Here we report the integration of aluminum nitride (AlN) films on silicon substrates to bring active functionalities to chip-scale photonics. Using CMOS-compatible sputtered thin films we fabricate AlN-on-insulator waveguides that exhibit low propagation loss (0.6 dB/cm). Exploiting AlN's inherent Pockels effect we demonstrate electro-optic modulation up to 4.5 Gb/s with very low energy consumption (down to 10 fJ/bit). The ultra-wide transparency window of AlN devices also enables high speed modulation at visible wavelengths. Our low cost, wideband, carrier-free photonic ...

  10. Thermo-piezo-electro-mechanical simulation of AlGaN (aluminum gallium nitride) / GaN (gallium nitride) High Electron Mobility Transistors

    Science.gov (United States)

    Stevens, Lorin E.

    Due to the current public demand of faster, more powerful, and more reliable electronic devices, research is prolific these days in the area of high electron mobility transistor (HEMT) devices. This is because of their usefulness in RF (radio frequency) and microwave power amplifier applications including microwave vacuum tubes, cellular and personal communications services, and widespread broadband access. Although electrical transistor research has been ongoing since its inception in 1947, the transistor itself continues to evolve and improve much in part because of the many driven researchers and scientists throughout the world who are pushing the limits of what modern electronic devices can do. The purpose of the research outlined in this paper was to better understand the mechanical stresses and strains that are present in a hybrid AlGaN (Aluminum Gallium Nitride) / GaN (Gallium Nitride) HEMT, while under electrically-active conditions. One of the main issues currently being researched in these devices is their reliability, or their consistent ability to function properly, when subjected to high-power conditions. The researchers of this mechanical study have performed a static (i.e. frequency-independent) reliability analysis using powerful multiphysics computer modeling/simulation to get a better idea of what can cause failure in these devices. Because HEMT transistors are so small (micro/nano-sized), obtaining experimental measurements of stresses and strains during the active operation of these devices is extremely challenging. Physical mechanisms that cause stress/strain in these structures include thermo-structural phenomena due to mismatch in both coefficient of thermal expansion (CTE) and mechanical stiffness between different materials, as well as stress/strain caused by "piezoelectric" effects (i.e. mechanical deformation caused by an electric field, and conversely voltage induced by mechanical stress) in the AlGaN and GaN device portions (both

  11. Oxidation and corrosion behavior of titanium aluminum nitride coatings by arc ion plating

    Institute of Scientific and Technical Information of China (English)

    LI Ming-sheng; FENG Chang-jie; ZHANG Zhi-feng; WANG Fu-hui

    2006-01-01

    Composite metastable TiN and Ti1-xAlxN coatings with different Al content were deposited on 1Cr11Ni2W2MoV stainless steel for aero-engine compressor blades by arc ion plating. The results show that all coatings have a B1NaCl structure and the preferred orientation changes from (111) to (220) with increasing Al content; the lattice parameter of Ti1-xAlxN decreases with the increase of Al content. The oxidation-resistance of (Ti,Al)N coatings is significantly improved owing to the formation of Al-riched oxide on the surface of the coatings. The nitride coatings can significantly improve the corrosion-resistance of 1Cr11Ni2W2MoV stainless steel under the synergistic of water vapor and NaCl, and the corrosion-resistance becomes better when the Al content increases, because not only the quick formation of thin alumina layer prevents the further corrosion but also the formation of alumina seals the pinholes or defects in the coatings, which prevents the occurrence of localized nodules-like corrosion.

  12. Effects of rare earth oxide additives on the thermal behaviors of aluminum nitride ceramics

    Institute of Scientific and Technical Information of China (English)

    YAO Yijun; WANG Ling; LI Chuncheng; JIANG Xiaolong; QIU Tai

    2009-01-01

    The effects of Y_2O_3 and Er_2O_3 on the sintering behaviors, thermal properties and microstructure of AIN ceramics were investigated. The ex-perimental results show that the sintering temperature can be decreased; the relative density and thermal behavior can be improved by adding rare earth oxide in AIN ceramics. For AIN ceramics with 3 wt.% Er_2O_3 additive, the relative density is 98.8%, and the thermal conductivity reaches 106 W·m~(-1)·K~(-1). The microstructure research found that no obvious aluminum erbium oxide was found in AIN ceramics doped with 3 wt.% Er_2O_3, which favored the improvement of the thermal conductivity of AIN ceramics.

  13. Ab-initio computations of electronic and transport properties of wurtzite aluminum nitride (w-AlN)

    Energy Technology Data Exchange (ETDEWEB)

    Nwigboji, Ifeanyi H.; Ejembi, John I.; Malozovsky, Yuriy; Khamala, Bethuel; Franklin, Lashounda; Zhao, Guanglin [Department of Physics, Southern University and A& M College, Baton Rouge, LA 70813 (United States); Ekuma, Chinedu E. [Department of Physics & Astronomy and Center for Computation and Technology, Louisiana State University, Baton Rouge, LA 70803 (United States); Bagayoko, Diola, E-mail: bagayoko@aol.com [Department of Physics, Southern University and A& M College, Baton Rouge, LA 70813 (United States)

    2015-05-01

    We report findings from several ab-initio, self-consistent calculations of electronic and transport properties of wurtzite aluminum nitride (w-AlN). Our calculations utilized a local density approximation (LDA) potential and the linear combination of Gaussian orbitals (LCGO). Unlike some other density functional theory (DFT) calculations, we employed the Bagayoko, Zhao, and Williams' method, enhanced by Ekuma and Franklin (BZW-EF). The BZW-EF method verifiably leads to the minima of the occupied energies; these minima, the low laying unoccupied energies, and related wave functions provide the most variationally and physically valid density functional theory (DFT) description of the ground states of materials under study. With multiple oxidation states of Al (Al{sup 3+} to Al) and the availability of N{sup 3−} to N, the BZW-EF method required several sets of self-consistent calculations with different ionic species as input. The binding energy for (Al{sup 3+}& N{sup 3−)} as input was 1.5 eV larger in magnitude than those for other input choices; the results discussed here are those from the calculation that led to the absolute minima of the occupied energies with this input. Our calculated, direct band gap for w-AlN, at the Γ point, is 6.28 eV, in excellent agreement with the 6.28 eV experimental value at 5K. We discuss the bands, total and partial densities of states, and calculated, effective masses. - Highlights: • LDA BZW-EF calculated band gap of w-AlN agrees well with experiment. • Features (widths & others) of the valence bands of w-AlN agree with experiment. • BZW-EF strictly adheres to the intrinsic requirements of DFT (and of LDA). • This adherence is the reason it outperforms DFT calculations not using it.

  14. Synthesis of cubic yttrium aluminum garnet (YAG) powders by co-precipitation and two-step calcinations

    Science.gov (United States)

    Girish, H. N.; Zhu, C.; Ma, F. F.; Shao, G. Q.

    2017-04-01

    YAG powders were synthesized by co-precipitation and two-step moderate calcinations at 600/800 °C or 600/900 °C in air, respectively. Two kinds of the synthesized powders both possess pure cubic YAG phases without any secondary phases such as YAH, YAP and YAM, etc.. The former has low agglomeration with nano-sized primary particles and large active energy, and the latter has homogeneously dispersed and well-crystallized particles, with a narrow particle size distribution of 8 - 13 µm.

  15. Lateral epitaxial overgrowth of aluminum nitride and near ultraviolet LEDs for white lighting applications

    Science.gov (United States)

    Newman, Scott A.

    In recent years, substantial efforts have been made to develop deep ultraviolet AlGaN-based LEDs (200-280 nm) for specialized applications such as bio-detection and non-line-of-sight (NLOS) communications. One of several factors limiting the performance of these devices is the high threading dislocation (TD) density of ˜5x109 cm-2 that results from growing the required AlN base layer on either a SiC or sapphire substrate. Lateral epitaxial overgrowth (LEO) of AlN, the first topic of this dissertation, is a promising technology for growing low TD density AlN templates. Conventional LEO methods relying on selective area growth (SAG) have not been effective for AlxGa1-xN with x > 0.2, because of the high aluminum sticking coefficient for the mask materials and/or contamination of the film by the mask. Therefore, maskless AlN LEO was investigated using metal organic chemical vapor deposition (MOCVD) and hydride vapor phase epitaxy (HVPE). Cracked AlN films with TD densities of LEDs for white lighting applications. Currently, cool white LEDs consisting of a blue GaN/InGaN LED and the YAG:Ce3+ yellow phosphor are available with 107 lm/W efficacy, but have have high correlated color temperatures (CCTs) of ˜5,500 K and poor color rendering indices (CRIs) of ˜75. The alternative approach of combining a NUV LED with suitable NUV-excitation phosphors (e.g., red, green, and blue phosphors) can theoretically allow for high CRI white lighting with relatively good efficacy and a variety of CCTs. When this project began in late 2007, the lack of suitable blue-excitation phosphors suggested that this was the only viable approach to attaining very high CRI white lighting. NUV LEDs with AlN buffers on 6H-SiC substrates and AlGaN/InGaN active regions were first developed to target white phosphors with excitation peaks near 365 nm. Later, NUV LEDs with GaN buffers on sapphire substrates and GaN/InGaN active regions were developed to diagnose problems with the AlGaN/InGaN LEDs and to

  16. Aluminum nitride thin film based acoustic wave sensors for biosensing applications

    Science.gov (United States)

    Xu, Jianzeng

    monitoring the frequency and phase changes in response to the coating of aluminum thin films onto the device surface. The derived mass sensitivity indicates that both modes could potentially reach an extremely low detection limit at the level of picograms.

  17. NMR and NQR study of Si-doped (6,0) zigzag single-walled aluminum nitride nanotube as n or P-semiconductors.

    Science.gov (United States)

    Baei, Mohammad T; Peyghan, Ali Ahmadi; Tavakoli, Khadijeh; Babaheydari, Ali Kazemi; Moghimi, Masoumeh

    2012-09-01

    Density functional theory (DFT) calculations were performed to investigate the electronic structure properties of pristine and Si-doped aluminum nitride nanotubes as n or P-semiconductors at the B3LYP/6-31G* level of theory in order to evaluate the influence of Si-doped in the (6,0) zigzag AlNNTs. We extended the DFT calculation to predict the electronic structure properties of Si-doped aluminum nitride nanotubes, which are very important for production of solid-state devices and other applications. To this aim, pristine and Si-doped AlNNT structures in two models (Si(N) and Si(Al)) were optimized, and then the electronic properties, the isotropic (CS(I)) and anisotropic (CS(A)) chemical shielding parameters for the sites of various (27)Al and (14)N atoms, NQR parameters for the sites of various of (27)Al and (14)N atoms, and quantum molecular descriptors were calculated in the optimized structures. The optimized structures, the electronic properties, NMR and NQR parameters, and quantum molecular descriptors for the Si(N) and Si(Al) models show that the Si(N) model is a more reactive material than the pristine or Si(Al) model.

  18. Growth of cubic III-nitrides by gas source MBE using atomic nitrogen plasma: GaN, AlGaN and AlN

    Science.gov (United States)

    Okumura, H.; Hamaguchi, H.; Koizumi, T.; Balakrishnan, K.; Ishida, Y.; Arita, M.; Chichibu, S.; Nakanishi, H.; Nagatomo, T.; Yoshida, S.

    1998-06-01

    Cubic GaN, AlGaN and AlN epilayers were grown on 3C-SiC(0 0 1) substrates by gas source molecular beam epitaxy using radio-frequency N 2 plasma containing atomic nitrogen species. Due to the enhancement of growth rate by this plasma source, cubic GaN epilayers with the thickness of several micrometers were obtained, and the quality of epilayers was so much improved that they showed an X-ray diffraction peak width as small as 9 min. Cubic Al xGa 1- xN and cubic AlN epilayers were also grown, and the variations of X-ray diffraction peak position and emission energy were observed according to the Al content.

  19. Boron nitride composites

    Science.gov (United States)

    Kuntz, Joshua D.; Ellsworth, German F.; Swenson, Fritz J.; Allen, Patrick G.

    2016-02-16

    According to one embodiment, a composite product includes hexagonal boron nitride (hBN), and a plurality of cubic boron nitride (cBN) particles, wherein the plurality of cBN particles are dispersed in a matrix of the hBN. According to another embodiment, a composite product includes a plurality of cBN particles, and one or more borate-containing binders.

  20. Boron nitride composites

    Energy Technology Data Exchange (ETDEWEB)

    Kuntz, Joshua D.; Ellsworth, German F.; Swenson, Fritz J.; Allen, Patrick G.

    2016-02-16

    According to one embodiment, a composite product includes hexagonal boron nitride (hBN), and a plurality of cubic boron nitride (cBN) particles, wherein the plurality of cBN particles are dispersed in a matrix of the hBN. According to another embodiment, a composite product includes a plurality of cBN particles, and one or more borate-containing binders.

  1. Plasmonic Titanium Nitride Nanostructures via Nitridation of Nanopatterned Titanium Dioxide

    DEFF Research Database (Denmark)

    Guler, Urcan; Zemlyanov, Dmitry; Kim, Jongbum

    2017-01-01

    Plasmonic titanium nitride nanostructures are obtained via nitridation of titanium dioxide. Nanoparticles acquired a cubic shape with sharper edges following the rock-salt crystalline structure of TiN. Lattice constant of the resulting TiN nanoparticles matched well with the tabulated data. Energ...

  2. Microstructure and mechanical properties of multiphase layer formed during depositing Ti film followed by plasma nitriding on 2024 aluminum alloy

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, F.Y., E-mail: zfy19861010@163.com; Yan, M.F., E-mail: yanmufu@hit.edu.cn

    2014-05-01

    Highlights: • A novel duplex surface treatment on 2024 Al alloy was proposed. • A multiphase layer composed of TiN{sub 0.3}, Al{sub 3}Ti and Al{sub 18}Ti{sub 2}Mg{sub 3} was prepared on the surface of 2024 Al alloy. • The microstructures of TiN{sub 0.3}, Al{sub 3}Ti and Al{sub 18}Ti{sub 2}Mg{sub 3} were characterized by SEM and TEM. • The surface hardness of the multiphase layer reached to 590 HV{sub 0.01}, five times harder than 2024 Al alloy. • The wear resistance of 2024 Al alloy was improved significantly. - Abstract: In this study, a novel method was develop to fabricate an in situ multiphase layer on 2024 Al alloy to improve its surface mechanical properties. The method was divided into two steps, namely depositing pure Ti film on 2024 Al substrate by using magnetron sputtering, and plasma nitriding of Ti coated 2024 Al in a gas mixture comprising of 40% N{sub 2}–60% H{sub 2}. The microstructure and mechanical properties of the multiphase layer prepared at different nitriding time were investigated by using X-ray diffractometer (XRD), scanning electron microscopy (SEM), transmission electron microscope (TEM), microhardness tester and pin-on-disc tribometer. Results showed that multiphase layer with three sub-layers (i.e. the outmost TiN{sub 0.3} layer, the intermediate Al{sub 3}Ti layer and the inside Al{sub 18}Ti{sub 2}Mg{sub 3} layer) can be obtained. The thickness of the Al{sub 18}Ti{sub 2}Mg{sub 3} layer increased faster than TiN{sub 0.3} and Al{sub 3}Ti layer with increasing nitriding time. The hardness of the layer has reached about 593 HV, which is much higher than that of 2024 Al substrate. The wear rate of the coated samples decreased 53% for 4 h nitriding and 86% for 12 h nitriding, respectively, compared with that of the uncoated one. The analysis of worn surface indicated that the coated 2024 Al exhibited predominant abrasive wear, whereas the uncoated one showed severe adhesive wear.

  3. Study on Macro-morphology of Hard whirling Chips with PCBN Cutting Tools Coated with Chromium Aluminum Nitride%氮化铬铝涂层PCBN刀具旋风硬铣切屑宏观特征研究

    Institute of Scientific and Technical Information of China (English)

    朱红雨; 李迎

    2011-01-01

    氮化铬铝具有比氮化钛铝更高的硬度和抗氧化性,能否作为PCBN刀具的涂层需要进行试验研究验证.通过对氮化铬铝涂层PCBN刀具在硬态旋风铣削淬硬钢GCr15平均硬度为63.5HRC)加工中,选用不同的切削参数、冷却方式和刀具个数的研究,从而得出氮化铬铝涂层PCBN刀具旋风硬铣加工的特点和应用范围,对涂层刀具的研究和切屑预报研究提供了依据.%Chromium Aluminum Nitride has much more hardness and oxidation resistance than Titanium Aluminum Nitride. This article studied on cutting tool wear, surface processing quality of work piece and macro-morphology of chips during the hard whirling machining on hardened steel GCrl5 with average hardness at 63. 5HRC through PCBN cutting tools coated with Chromium Aluminum Nitride. Through testing with different cutting parameters, different cooling mode and different cutting tool numbers, this article illustrated characters and application scope of hard whirling machining with PCBN cutting tools coated with Chromium Aluminum Nitride and provided a basis for research on cutting tool coating or research on machining forecasting through chips.

  4. Colloidal Plasmonic Titanium Nitride Nanoparticles: Properties and Applications

    DEFF Research Database (Denmark)

    Guler, Urcan; Suslov, Sergey; Kildishev, Alexander V.

    2015-01-01

    Optical properties of colloidal plasmonic titanium nitride nanoparticles are examined with an eye on their photothermal and photocatalytic applications via transmission electron microscopy and optical transmittance measurements. Single crystal titanium nitride cubic nanoparticles with an average...

  5. Preparation of Cubic Boron Nitride Coating on WC-Co Substrate by Micro/Nanocrystalline Diamond Film Interlayer%基于微纳米金刚石过渡层的cBN刀具涂层制备

    Institute of Scientific and Technical Information of China (English)

    徐锋; 左敦稳; 张旭辉; 户海峰; 张骋; 王珉

    2013-01-01

    Cubic Boron Nitride(cBN) is a super-hard material, of which hardness is only less than diamond. But it has excellent chemical stability, especially no chemical reaction with ferrous materials. The cBN coating has irreplaceable function in the application of modern cutting tools. Research is carried out on the preparation of cBN coating on YG6 by micro/nanocrystalline diamond (M/NCD) film inter-layer. The micro/nanocrystalline diamond film is deposited in hot filament chemical vapor deposition system and cBN is deposited in radio frequency magnetron sputtering system. The scanning electron microscopy (SEM), Raman, atomic force microscopy(AFM), Fourier transferred infrared(FTIR) and in-denter are used to investigate the content, morphology and adhesion of the coating. The results show that the adhesion of cBN coating on WC-Co by micro/nanocrystalline diamond interlayer is much higher than that by nano diamond interlayer. The moderate bias voltage is important for the cBN film deposition in the magnetron sputtering process.%立方氮化硼(Cubic Boron Nitride,cBN)是仅次于金刚石的超硬材料,比金刚石具有更高的化学稳定性,可以胜任铁系金属的加工.本文在YG6硬质合金上基于微纳米金刚石过渡层开展cBN涂层的制备研究.本文在热丝化学气相沉积系统中制备微纳米金刚石过渡层(Micro/nanocrystalline diamond,M/NCD),在射频磁控溅射系统中制备cBN涂层,并对M/NCD与cBN涂层进行了成分、微观形貌与结合性能的研究.研究结果发现,在硬质合金基体上,M/NCD过渡层的结合性能明显优于NCD过渡层.磁控溅射制备cBN涂层过程中,存在适合cBN沉积的衬底偏压阈值,过高或过低的衬底偏压均不利于cBN含量的提高.

  6. Synthesis of ternary metal nitride nanoparticles using mesoporous carbon nitride as reactive template.

    Science.gov (United States)

    Fischer, Anna; Müller, Jens Oliver; Antonietti, Markus; Thomas, Arne

    2008-12-23

    Mesoporous graphitic carbon nitride was used as both a nanoreactor and a reactant for the synthesis of ternary metal nitride nanoparticles. By infiltration of a mixture of two metal precursors into mesoporous carbon nitride, the pores act first as a nanoconfinement, generating amorphous mixed oxide nanoparticles. During heating and decomposition, the carbon nitride second acts as reactant or, more precisely, as a nitrogen source, which converts the preformed mixed oxide nanoparticles into the corresponding nitride (reactive templating). Using this approach, ternary metal nitride particles with diameters smaller 10 nm composed of aluminum gallium nitride (Al-Ga-N) and titanium vanadium nitride (Ti-V-N) were synthesized. Due to the confinement effect of the carbon nitride matrix, the composition of the resulting metal nitride can be easily adjusted by changing the concentration of the preceding precursor solution. Thus, ternary metal nitride nanoparticles with continuously adjustable metal composition can be produced.

  7. The use of polyimide-modified aluminum nitride fillers in AlN@PI/Epoxy composites with enhanced thermal conductivity for electronic encapsulation

    Science.gov (United States)

    Zhou, Yongcun; Yao, Yagang; Chen, Chia-Yun; Moon, Kyoungsik; Wang, Hong; Wong, Ching-Ping

    2014-04-01

    Polymer modified fillers in composites has attracted the attention of numerous researchers. These fillers are composed of core-shell structures that exhibit enhanced physical and chemical properties that are associated with shell surface control and encapsulated core materials. In this study, we have described an apt method to prepare polyimide (PI)-modified aluminum nitride (AlN) fillers, AlN@PI. These fillers are used for electronic encapsulation in high performance polymer composites. Compared with that of untreated AlN composite, these AlN@PI/epoxy composites exhibit better thermal and dielectric properties. At 40 wt% of filler loading, the highest thermal conductivity of AlN@PI/epoxy composite reached 2.03 W/mK. In this way, the thermal conductivity is approximately enhanced by 10.6 times than that of the used epoxy matrix. The experimental results exhibiting the thermal conductivity of AlN@PI/epoxy composites were in good agreement with the values calculated from the parallel conduction model. This research work describes an effective pathway that modifies the surface of fillers with polymer coating. Furthermore, this novel technique improves the thermal and dielectric properties of fillers and these can be used extensively for electronic packaging applications.

  8. Impact of layer and substrate properties on the surface acoustic wave velocity in scandium doped aluminum nitride based SAW devices on sapphire

    Energy Technology Data Exchange (ETDEWEB)

    Gillinger, M., E-mail: manuel.gillinger@tuwien.ac.at; Knobloch, T.; Schneider, M.; Schmid, U. [Institute of Sensor and Actuator Systems, TU Wien, 1040 Vienna (Austria); Shaposhnikov, K.; Kaltenbacher, M. [Institute of Mechanics and Mechatronics, TU Wien, 1040 Vienna (Austria)

    2016-06-06

    This paper investigates the performance of surface acoustic wave (SAW) devices consisting of reactively sputter deposited scandium doped aluminum nitride (Sc{sub x}Al{sub 1-x}N) thin films as piezoelectric layers on sapphire substrates for wireless sensor or for RF-MEMS applications. To investigate the influence of piezoelectric film thickness on the device properties, samples with thickness ranging from 500 nm up to 3000 nm are fabricated. S{sub 21} measurements and simulations demonstrate that the phase velocity is predominantly influenced by the mass density of the electrode material rather than by the thickness of the piezoelectric film. Additionally, the wave propagation direction is varied by rotating the interdigital transducer structures with respect to the crystal orientation of the substrate. The phase velocity is about 2.5% higher for a-direction compared to m-direction of the sapphire substrate, which is in excellent agreement with the difference in the anisotropic Young's modulus of the substrate corresponding to these directions.

  9. Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF{sub 6} based plasmas

    Energy Technology Data Exchange (ETDEWEB)

    Perros, Alexander; Bosund, Markus; Sajavaara, Timo; Laitinen, Mikko; Sainiemi, Lauri; Huhtio, Teppo; Lipsanen, Harri [Department of Micro- and Nanosciences, Aalto University School of Electrical Engineering, P.O. Box 13500, FI-00076 Aalto (Finland); Department of Physics, University of Jyvaeskylae, P.O. Box 35, 40014, Jyvaeskylae,Finland (Finland); Department of Micro and Nanosciences, School of Electrical Engineering, Aalto University, P.O. Box 13500, FI-00076, Aalto (Finland)

    2012-01-15

    The plasma etch characteristics of aluminum nitride (AlN) deposited by low-temperature, 200 deg. C, plasma enhanced atomic layer deposition (PEALD) was investigated for reactive ion etch (RIE) and inductively coupled plasma-reactive ion etch (ICP-RIE) systems using various mixtures of SF{sub 6} and O{sub 2} under different etch conditions. During RIE, the film exhibits good mask properties with etch rates below 10r nm/min. For ICP-RIE processes, the film exhibits exceptionally low etch rates in the subnanometer region with lower platen power. The AlN film's removal occurred through physical mechanisms; consequently, rf power and chamber pressure were the most significant parameters in PEALD AlN film removal because the film was inert to the SF{sub x}{sup +} and O{sup +} chemistries. The etch experiments showed the film to be a resilient masking material. This makes it an attractive candidate for use as an etch mask in demanding SF{sub 6} based plasma etch applications, such as through-wafer etching, or when oxide films are not suitable.

  10. Study on Electrical Discharge Machining Technology of Polycrystalline Cubic Boron Nitride Cutting Tool%聚晶立方氮化硼刀具刃口放电加工工艺研究

    Institute of Scientific and Technical Information of China (English)

    贾云海; 李建钢; 朱立新; 宋英杰

    2012-01-01

    通过调整电火花加工的主要放电参数(脉冲宽度和加工电流),对聚晶立方氮化硼(PCBN)样刀进行放电加工,进而对样刀刃口表面进行X射线衍射分析,并在扫描电子显微镜下观察其表层结构及能谱分析.通过对加工后样刀表面变质层主要成分及产生原因的分析,总结了脉冲宽度和加工电流对样刀表面变质层厚度、刃口表面粗糙度影响的关系曲线,为制定精密快速放电加工PCBN刀具的工艺提供了重要依据.%The samples of polycrystalline cubic boron nitride(PCBN) cutting tool were machined by adjusting the main parameters of electrical discharge machining (EDM). After the machining, the phases were analyzed by X-ray diffraction analyzer and the surface layer microstructure was observed by scanning electronic microscope. The fundamental component of machined PCBN cutting tool affected layer was obtained and the reason of begetting affected layer was analyzed. The relationship curves between pulse width, working electric current and depth affected layer, blade surface roughness were summarized. The results showed that to adjust electrical discharge machining parameters, such as decreasing pulse width or machining electric currents, can reduce the depth of affect layer and improve blade surface roughness. These researches provide valuable test reference for drawing up electrical discharge machining technology of PCBN cutting tool.

  11. Simultaneous Characterization for the Organic Additive Burnout of Aqueous Tape Casting Aluminum Nitride by Thermogravimetry-Differential Scanning Calorimetry-Mass Spectrometry%水基AlN流延膜有机添加剂排胶过程的热重-差示扫描热量-质谱研究

    Institute of Scientific and Technical Information of China (English)

    于惠梅; 雒晓军; 陆昌伟; 奚同庚; 罗澜

    2004-01-01

    In this work, through the comparison analysis with the results of the thermogravimetry-differential scanning calorimetry-mass spectrometry (TG-DSC-MS) coupling techniques for the three organic additive and aqueous tape casting aluminum nitride in air and nitrogen atmosphere, it can be found that the plasticity glycerol was almost burnout before 350℃ in two atmosphere; the binder PVA124 was almost burnout before 600℃ in air, there was little left in nitrogen; The mass losses of the dispersant DP270 in air and nitrogen atmosphere were about 73.32% and 65.51% before 600℃ ; The mass losses of the aqueous tape casting aluminum nitride in air (14.08%) were higher that in nitrogen (10.75%) before 600℃. It can be concluded that the organic additive burnout of the aqueous tape casting aluminum nitride in air atmosohere was better than in nitrogen atmosphere.

  12. Enhanced performance of a quasi-solid-state dye-sensitized solar cell with aluminum nitride in its gel polymer electrolyte

    KAUST Repository

    Huang, Kuan-Chieh

    2011-08-01

    The effects of incorporation of aluminum nitride (AlN) in the gel polymer electrolyte (GPE) of a quasi-solid-state dye-sensitized solar cell (DSSC) were studied in terms of performance of the cell. The electrolyte, consisting of lithium iodide (LiI), iodine (I2), and 4-tert-butylpyridine (TBP) in 3-methoxypropionitrile (MPN), was solidified with poly(vinyidene fluoride-co-hexafluoro propylene) (PVDF-HFP). The 0.05, 0.1, 0.3, and 0.5 wt% of AlN were added to the electrolyte for this study. XRD analysis showed a reduction of crystallinity in the polymer PVDF-HFP for all the additions of AlN. The DSSC fabricated with a GPE containing 0.1 wt% AlN showed a short-circuit current density (JSC) and power-conversion efficiency (η) of 12.92±0.54 mA/cm2 and 5.27±0.23%, respectively, at 100 mW/cm2 illumination, in contrast to the corresponding values of 11.52±0.21 mA/cm2 and 4.75±0.08% for a cell without AlN. The increases both in JSC and in η of the promoted DSSC are attributed to the higher apparent diffusion coefficient of I- in its electrolyte (3.52×10-6 cm2/s), compared to that in the electrolyte without AlN of a DSSC (2.97×10-6 cm 2/s). At-rest stability of the quasi-solid-state DSSC with 0.1 wt% of AlN was found to decrease hardly by 5% and 7% at room temperature and at 40 °C, respectively, after 1000 h duration. The DSSC with a liquid electrolyte showed a decrease of about 40% at room temperature, while it virtually lost its performance in about 150 h at 40 °C. Explanations are further substantiated by means of electrochemical impedance spectroscopy (EIS), scanning electron microscopy (SEM), and by porosity measurements. © 2010 Elsevier B.V.

  13. Preparation of high-pressure phase boron nitride films by physical vapor deposition

    CERN Document Server

    Zhu, P W; Zhao, Y N; Li, D M; Liu, H W; Zou Guang Tian

    2002-01-01

    The high-pressure phases boron nitride films together with cubic, wurtzic, and explosive high-pressure phases, were successfully deposited on the metal alloy substrates by tuned substrate radio frequency magnetron sputtering. The percentage of cubic boron nitride phase in the film was about 50% as calculated by Fourier transform infrared measurements. Infrared peak position of cubic boron nitride at 1006.3 cm sup - sup 1 , which is close to the stressless state, indicates that the film has very low internal stress. Transition electron microscope micrograph shows that pure cubic boron nitride phase exits on the surface of the film. The growth mechanism of the BN films was also discussed.

  14. NH4Cl对机械活化Al粉燃烧合成AlN的控制%Effects of NH4CI on the synthesis of aluminum nitride by the spontaneous combustion of mechanically activated aluminium powder

    Institute of Scientific and Technical Information of China (English)

    刘建平; 张晖

    2011-01-01

    添加NH4Cl到经由高能球磨制得的机械活化铝粉中后,铝粉在空气中于室温下即可发生自燃反应.本研究通过含有不同量NH4Cl的机械活化铝粉的自燃制得了Al2O3-AlN疏松粉末,并研究了NH4CL添加量对燃烧产物成分和结构的控制.结果表明:NH4Cl不仅控制了产物的形貌,而且改变了铝粉的氮化初理.在NH4Cl添加量为3%~5%(质量分数)时,所得燃烧产物颗粒大小相对较均匀,并含有700%(质量分数)以上的AlN.%With the addition of NH4CI, the mechanically activated aluminum powder made by high energy ball milling could bum spontaneously in air at room temperature with the formation of Al2O3-AIN powder. In this study, AIN powders were prepared by the spontaneous combustion of aluminum powder including different amounts of NH4CI. The effects of NH4Cl content on the composition and structure of the combustion product were studied by characterizing the phase and morphology of combustion products. The results show that NH4CI not only affects the morphology of products, but also changes the nitridation mechanism of aluminum powder. When 3%~5% (mass fraction) NH4CI is added, the sizes of particles included in the combustion product show small variation and the content of AIN in the combustion product is above 70% (mass fraction).

  15. Continuous and discontinuous precipitation in Fe-1 at.%Cr-1 at.%Mo alloy upon nitriding; crystal structure and composition of ternary nitrides

    Science.gov (United States)

    Steiner, Tobias; Ramudu Meka, Sai; Rheingans, Bastian; Bischoff, Ewald; Waldenmaier, Thomas; Yeli, Guma; Martin, Tomas L.; Bagot, Paul A. J.; Moody, Michael P.; Mittemeijer, Eric J.

    2016-05-01

    The internal nitriding response of a ternary Fe-1 at.%Cr-1 at.%Mo alloy, which serves as a model alloy for many CrMo-based steels, was investigated. The nitrides developing upon nitriding were characterised by X-ray diffraction, scanning electron microscopy, electron probe microanalysis, transmission electron microscopy and atom probe tomography. The developed nitrides were shown to be (metastable) ternary mixed nitrides, which exhibit complex morphological, compositional and structural transformations as a function of nitriding time. Analogous to nitrided binary Fe-Cr and Fe-Mo alloys, in ternary Fe-Cr-Mo alloys initially continuous precipitation of fine, coherent, cubic, NaCl-type nitride platelets, here with the composition (Cr½,Mo½)N¾, occurs, with the broad faces of the platelets parallel to the {1 0 0}α-Fe lattice planes. These nitrides undergo a discontinuous precipitation reaction upon prolonged nitriding leading to the development of lamellae of a novel, hexagonal CrMoN2 nitride along {1 1 0}α-Fe lattice planes, and of spherical cubic, NaCl-type (Cr,Mo)Nx nitride particles within the ferrite lamellae. The observed structural and compositional changes of the ternary nitrides have been attributed to the thermodynamic and kinetic constraints for the internal precipitation of (misfitting) nitrides in the ferrite matrix.

  16. Construction and properties of a two-circuit plasma beam source for the direct plasma beam deposition on hard-material layers and its application at the example of cubic boron nitride

    CERN Document Server

    Haag, M

    2003-01-01

    In the present work a two-circuit plasma beam source for the direct plasma beam deposition of highly insulating thin films was developed and tested using the technologically very interesting system boron nitride as an example. In the utilized source a nitrogen plasma is excited electrodeless via electron cyclotron wave resonance (ECWR). The source plasma is superimposed by a second radio frequency circuit capacitively coupled and operated at variable frequency (v sub c sub a sub p =5..125Mhz) - the so-called extraction circuit. This circuit consists of a coupling electrode carrying a sputter target made from hexagonal boron nitride and a grounded substrate holder. By the self-bias potential between plasma and coupling electrode plasma ions are accelerated towards the target. They sputter the target and thus provide the boron component for the desired film growth. The corresponding self-bias potential on the substrate side ensures the ion bombardment of the film growing on the substrate. The incident ion beam ...

  17. Modeling of the effects of different substrate materials on the residual thermal stresses in the aluminum nitride crystal grown by sublimation

    Science.gov (United States)

    Lee, R. G.; Idesman, A.; Nyakiti, L.; Chaudhuri, J.

    2009-02-01

    A three-dimensional numerical finite element modeling method is applied to compare interfacial residual thermal stress distribution in AlN single crystals grown by using different substrates such as silicon carbide, boron nitride, tungsten, tantalum carbide, and niobium carbide. A dimensionless coordinate system is used which reduces the numbers of computations and hence simplifies the stress analysis. All components of the stress distribution, both in the film and in the substrate, including the normal stress along the growth direction as well as in-plane normal stresses and shear stresses are fully investigated. This information about the stress distribution provides insight into understanding and controlling the AlN single crystal growth by the sublimation technique. The normal stress in the film at the interface along the growth direction and the shear stresses are zero except at the edges, whereas in-plane stresses are nonzero. The in-plane stresses are compressive when TaC and NbC substrates are used. A small compressive stress might be beneficial in prohibiting crack growth in the film. The compressive stress in the AlN is lower for the TaC substrate than that for the NbC. Tensile in-plane stresses are formed in the AlN for 6H-SiC, BN, and W substrates. This tensile stress in the film is detrimental as it will assist in the crack growth. The stress concentration at the edges of the AlN film at the interface is compressive in nature when TaC and NbC are used as a substrate. This causes the film to bend downward (i.e., convex shape) and assist it to adhere to the substrate. The AlN film curves upward or in a concave shape when SiC, BN, and W substrates are used since the stress concentration at the edges of the AlN film is tensile at the interface and this may cause detachment of the film from the substrate.

  18. Microstructure and Properties of Plasma Source Nitrided AISI 316 Austenitic Stainless Steel

    Science.gov (United States)

    Li, G. Y.; Lei, M. K.

    2016-11-01

    Plasma source nitriding is a relatively new nitriding technology which can overcome those inherent shortcomings associated with conventional direct current plasma nitriding technology such as the arcing surface damage, the edging effect and the hollow cathode effect. There is considerable study on the properties of nitrided samples for laboratorial scale plasma source nitriding system; however, little information has been reported on the industrial-scale plasma source nitriding system. In this work, AISI 316 austenitic stainless steel samples were nitrided by an industrial-scale plasma source nitriding system at various nitriding temperatures (350, 400, 450 and 500 °C) with a floating potential. A high-nitrogen face-centered-cubic phase (γN) formed on the surface of nitrided sample surface. As the nitriding temperature was increased, the γN phase layer thickness increased, varying from 1.5 μm for the lowest nitriding temperature of 350 °C, to 30 μm for the highest nitriding temperature of 500 °C. The maximum Vickers microhardness of the γN phase layer with a peak nitrogen concentration of 20 at.% is about HV 0.1 N 15.1 GPa at the nitriding temperature of 450 °C. The wear and corrosion experimental results demonstrated that the γN phase was formed on the surface of AISI 316 austenitic stainless steel by plasma source nitriding, which exhibits not only high wear resistance, but also good pitting corrosion resistance.

  19. Colloidal Plasmonic Titanium Nitride Nanoparticles: Properties and Applications

    CERN Document Server

    Guler, Urcan; Kildishev, Alexander V; Boltasseva, Alexandra; Shalaev, Vladimir M

    2014-01-01

    Optical properties of colloidal plasmonic titanium nitride nanoparticles are examined with an eye on their photothermal via transmission electron microscopy and optical transmittance measurements. Single crystal titanium nitride cubic nanoparticles with an average size of 50 nm exhibit plasmon resonance in the biological transparency window. With dimensions optimized for efficient cellular uptake, the nanoparticles demonstrate a high photothermal conversion efficiency. A self-passivating native oxide at the surface of the nanoparticles provides an additional degree of freedom for surface functionalization.

  20. Cubic Subalgebras and Cubic Closed Ideals of B-algebras

    Directory of Open Access Journals (Sweden)

    Tapan Senapati

    2015-06-01

    Full Text Available In this paper, the concept of cubic set to subalgebras, ideals and closed ideals of B-algebras are introduced. Relations among cubic subalgebras with cubic ideals and cubic closed ideals of B-algebras investigated. The homomorphic image and inverse image of cubic subalgebras, ideals are studied and some related properties are investigated. Also, the product of cubic B-algebras are investigated.

  1. Thermal atomic layer etching of crystalline aluminum nitride using sequential, self-limiting hydrogen fluoride and Sn(acac){sub 2} reactions and enhancement by H{sub 2} and Ar plasmas

    Energy Technology Data Exchange (ETDEWEB)

    Johnson, Nicholas R.; Sun, Huaxing; Sharma, Kashish [Department of Chemistry and Biochemistry, University of Colorado at Boulder, Colorado 80309 (United States); George, Steven M., E-mail: Steven.George@Colorado.Edu [Department of Chemistry and Biochemistry, University of Colorado at Boulder, Colorado 80309 and Department of Mechanical Engineering, University of Colorado at Boulder, Colorado 80309 (United States)

    2016-09-15

    Thermal atomic layer etching (ALE) of crystalline aluminum nitride (AlN) films was demonstrated using sequential, self-limiting reactions with hydrogen fluoride (HF) and tin(II) acetylacetonate [Sn(acac){sub 2}] as the reactants. Film thicknesses were monitored versus number of ALE reaction cycles at 275 °C using in situ spectroscopic ellipsometry (SE). A low etch rate of ∼0.07 Å/cycle was measured during etching of the first 40 Å of the film. This small etch rate corresponded with the AlO{sub x}N{sub y} layer on the AlN film. The etch rate then increased to ∼0.36 Å/cycle for the pure AlN films. In situ SE experiments established the HF and Sn(acac){sub 2} exposures that were necessary for self-limiting surface reactions. In the proposed reaction mechanism for thermal AlN ALE, HF fluorinates the AlN film and produces an AlF{sub 3} layer on the surface. The metal precursor, Sn(acac){sub 2}, then accepts fluorine from the AlF{sub 3} layer and transfers an acac ligand to the AlF{sub 3} layer in a ligand-exchange reaction. The possible volatile etch products are SnF(acac) and either Al(acac){sub 3} or AlF(acac){sub 2}. Adding a H{sub 2} plasma exposure after each Sn(acac){sub 2} exposure dramatically increased the AlN etch rate from 0.36 to 1.96 Å/cycle. This enhanced etch rate is believed to result from the ability of the H{sub 2} plasma to remove acac surface species that may limit the AlN etch rate. The active agent from the H{sub 2} plasma is either hydrogen radicals or radiation. Adding an Ar plasma exposure after each Sn(acac){sub 2} exposure increased the AlN etch rate from 0.36 to 0.66 Å/cycle. This enhanced etch rate is attributed to either ions or radiation from the Ar plasma that may also lead to the desorption of acac surface species.

  2. Synthesis of Nano-Scale Fast Ion Conducting Cubic Li7La3Zr2O12

    Science.gov (United States)

    2013-09-25

    0.24 moles of aluminum was added using aluminum oxide (50 nm, Merck) to the precursor solution before gelation occurs. The process flow diagram...cubic Li A solution-based process was investigated for synthesizing cubic Li7La3Zr2O12 (LLZO), which is known to exhibit the unprecedented combination of...Park, NC 27709-2211 batteries, solution based process , synthesizing cubic LLZO, fast ionic conductivity REPORT DOCUMENTATION PAGE 11. SPONSOR

  3. Conductive and robust nitride buffer layers on biaxially textured substrates

    Science.gov (United States)

    Sankar, Sambasivan [Chicago, IL; Goyal, Amit [Knoxville, TN; Barnett, Scott A [Evanston, IL; Kim, Ilwon [Skokie, IL; Kroeger, Donald M [Knoxville, TN

    2009-03-31

    The present invention relates to epitaxial, electrically conducting and mechanically robust, cubic nitride buffer layers deposited epitaxially on biaxially textured substrates such as metals and alloys. The invention comprises of a biaxially textured substrate with epitaxial layers of nitrides. The invention also discloses a method to form such epitaxial layers using a high rate deposition method as well as without the use of forming gases. The invention further comprises epitaxial layers of oxides on the biaxially textured nitride layer. In some embodiments the article further comprises electromagnetic devices which may have superconducting properties.

  4. Facile Solid-State Synthesis Route to Metal Nitride Nanoparticles

    Institute of Scientific and Technical Information of China (English)

    Yinxiao DU; Ming LEI; Hui YANG

    2008-01-01

    By a facile and efficient solid-state reaction route using an organic reagent cyanamide (CN2H2) as a precursor with another one being metal oxides, we successfully synthesized seven technologically important metal nitrides including cubic VN, CrN, NbN, hexagonal GaN, AIN, BN, and WN at moderate temperatures. The experimental results show that cyanamide (CN2H2) is a powerfully reducing and nitridizing reagent and the metal oxides are completely converted into the corresponding nitride nanoparticles at lower temperatures than that reported in the conventional methods. It is found that CN2H2 can exhibit some interesting condensation processes, and the final products, highly active carbon nitride species, play a crucial role in the reducing and nitridizing processes.

  5. Safety Assessment of Boron Nitride as Used in Cosmetics.

    Science.gov (United States)

    Fiume, Monice M; Bergfeld, Wilma F; Belsito, Donald V; Hill, Ronald A; Klaassen, Curtis D; Liebler, Daniel C; Marks, James G; Shank, Ronald C; Slaga, Thomas J; Snyder, Paul W; Andersen, F Alan

    2015-01-01

    The Cosmetic Ingredient Review Expert Panel (Panel) assessed the safety of boron nitride which functions in cosmetics as a slip modifier (ie, it has a lubricating effect). Boron nitride is an inorganic compound with a crystalline form that can be hexagonal, spherical, or cubic; the hexagonal form is presumed to be used in cosmetics. The highest reported concentration of use of boron nitride is 25% in eye shadow formulations. Although boron nitride nanotubes are produced, boron nitride is not listed as a nanomaterial used in cosmetic formulations. The Panel reviewed available chemistry, animal data, and clinical data and concluded that this ingredient is safe in the present practices of use and concentration in cosmetic formulations.

  6. Crystalline boron nitride aerogels

    Science.gov (United States)

    Zettl, Alexander K.; Rousseas, Michael; Goldstein, Anna P.; Mickelson, William; Worsley, Marcus A.; Woo, Leta

    2017-04-04

    This disclosure provides methods and materials related to boron nitride aerogels. In one aspect, a material comprises an aerogel comprising boron nitride. The boron nitride has an ordered crystalline structure. The ordered crystalline structure may include atomic layers of hexagonal boron nitride lying on top of one another, with atoms contained in a first layer being superimposed on atoms contained in a second layer.

  7. Crystalline boron nitride aerogels

    Energy Technology Data Exchange (ETDEWEB)

    Zettl, Alexander K.; Rousseas, Michael; Goldstein, Anna P.; Mickelson, William; Worsley, Marcus A.; Woo, Leta

    2017-04-04

    This disclosure provides methods and materials related to boron nitride aerogels. In one aspect, a material comprises an aerogel comprising boron nitride. The boron nitride has an ordered crystalline structure. The ordered crystalline structure may include atomic layers of hexagonal boron nitride lying on top of one another, with atoms contained in a first layer being superimposed on atoms contained in a second layer.

  8. Fracture resistance of surface-nitrided zirconia

    Energy Technology Data Exchange (ETDEWEB)

    Feder, A.; Casellas, D.; Llanes, L.; Anglada, M. [Universidad Politecnica de Cataluna, Barcelona (Spain). Dept. of Material Science and Metallurgy

    2002-07-01

    Heat treatments have been conducted at 1650 C for 2 hours in Y-TZP stabilised with 2.5% molar of yttria in two different environments: in air and in nitrogen gas with the specimens embedded in a zirconium nitride powder bed. Relevant microstructural changes were induced by these heat treatments. It is highlighted the formation of a nitrided surface layer of about 400 {mu}m in thickness. Such layer has clear microstructural differences with respect to the bulk, and is formed by different sublayers with cubic and tetragonal phases with distinct degrees of transformability, as revealed by XRD and Raman spectroscopy. The fracture toughness and the hardness of the nitrided surface layer are higher than for the original Y-TZP. (orig.)

  9. Plasma nitriding of steels

    CERN Document Server

    Aghajani, Hossein

    2017-01-01

    This book focuses on the effect of plasma nitriding on the properties of steels. Parameters of different grades of steels are considered, such as structural and constructional steels, stainless steels and tools steels. The reader will find within the text an introduction to nitriding treatment, the basis of plasma and its roll in nitriding. The authors also address the advantages and disadvantages of plasma nitriding in comparison with other nitriding methods. .

  10. Silicon nitride equation of state

    Science.gov (United States)

    Brown, Robert C.; Swaminathan, Pazhayannur K.

    2017-01-01

    This report presents the development of a global, multi-phase equation of state (EOS) for the ceramic silicon nitride (Si3N4).1 Structural forms include amorphous silicon nitride normally used as a thin film and three crystalline polymorphs. Crystalline phases include hexagonal α-Si3N4, hexagonal β-Si3N4, and the cubic spinel c-Si3N4. Decomposition at about 1900 °C results in a liquid silicon phase and gas phase products such as molecular nitrogen, atomic nitrogen, and atomic silicon. The silicon nitride EOS was developed using EOSPro which is a new and extended version of the PANDA II code. Both codes are valuable tools and have been used successfully for a variety of material classes. Both PANDA II and EOSPro can generate a tabular EOS that can be used in conjunction with hydrocodes. The paper describes the development efforts for the component solid phases and presents results obtained using the EOSPro phase transition model to investigate the solid-solid phase transitions in relation to the available shock data that have indicated a complex and slow time dependent phase change to the c-Si3N4 phase. Furthermore, the EOSPro mixture model is used to develop a model for the decomposition products; however, the need for a kinetic approach is suggested to combine with the single component solid models to simulate and further investigate the global phase coexistences.

  11. Titanium aluminum nitride sputtered by HIPIMS

    Science.gov (United States)

    Weichart, Juergen; Lechthaler, Markus

    2012-09-01

    TiAlN was sputtered reactively by HIPIMS in the target compositions Ti/Al 33/67 and 50/50 using a modified OC Oerlikon Balzers INNOVA coating equipment. The resulting film properties like deposition rate, surface roughness, hardness, Young's modulus, wear, and film stress were analyzed as function of the nitrogen gas flow, pressure, target-substrate distance, and substrate bias. Furthermore, the films were characterized by X-ray diffraction and secondary electron microscopy of the cross section and the surface appearance. The process characteristics and film properties were compared with pulsed DC sputtering under the same conditions.

  12. Radiation damage in heavy irradiated aluminum nitride

    Energy Technology Data Exchange (ETDEWEB)

    Atobe, Kozo; Honda, Makoto; Fukuoka, Noboru [Naruto Univ. of education, Tokushima (Japan); Okada, Moritami; Nakagawa, Masuo

    1996-04-01

    AlN, one of candidate for ceramic materials used in nuclear fusion reactor, was irradiated by fast and thermal neutrons. The high concentration of irradiated defects and the nuclear transformation elements were detected by electron spin resonance (ESR) and x-ray photoelectron spectroscopy (XPS) method. The exposure of fast neutron and thermal neutron were 1.2x10{sup 20}n/cm{sup 2} and 1.2x10{sup 21}n/cm{sup 2}, respectively. The spreads of ESR spectra of ultra hyperfine structure depending on interaction between {sup 27}Al nuclear spin and electron trapped in tetrahedron consisted of Al atoms was found in the spectra of heavy irradiated AlN. F type defects was estimated 10{sup 19}n/cm{sup 3}. Photoelectrons from 2s and 2p in {sup 28}Si which produced in process of {beta}-decay of {sup 27}Al(n,{gamma}){sup 28}Al were observed in XPS spectra of irradiated samples. (S.Y.)

  13. Einsteinian cubic gravity

    Science.gov (United States)

    Bueno, Pablo; Cano, Pablo A.

    2016-11-01

    We drastically simplify the problem of linearizing a general higher-order theory of gravity. We reduce it to the evaluation of its Lagrangian on a particular Riemann tensor depending on two parameters, and the computation of two derivatives with respect to one of those parameters. We use our method to construct a D -dimensional cubic theory of gravity which satisfies the following properties: (1) it shares the spectrum of Einstein gravity, i.e., it only propagates a transverse and massless graviton on a maximally symmetric background; (2) it is defined in the same way in general dimensions; (3) it is neither trivial nor topological in four dimensions. Up to cubic order in curvature, the only previously known theories satisfying the first two requirements are the Lovelock ones. We show that, up to cubic order, there exists only one additional theory satisfying requirements (1) and (2). Interestingly, this theory is, along with Einstein gravity, the only one which also satisfies (3).

  14. 基底温度对反应磁控溅射氮化铝薄膜的影响%Effects of Substrate Temperature on Aluminum Nitride Films by Reactively Magnetron Sputtering

    Institute of Scientific and Technical Information of China (English)

    黄美东; 张琳琳; 王丽格; 佟莉娜; 李晓娜; 董闯

    2011-01-01

    采用反应磁控溅射法结合加热控温电源,在光学玻璃基底上制备氮化铝(AlN)薄膜,通过X射线衍射(XRD)技术对薄膜样品物相结构进行分析,利用纳米压痕仪测试薄膜样品的硬度及弹性模量,用椭圆偏振仪及光栅光谱仪测试了薄膜样品的光学性能,分析和研究了基底温度对AlN薄膜的结构及性能的影响.结果表明,用此方法获得的AlN薄膜呈晶态,属于六方晶系,温度对AlN(100)面衍射峰强度影响不大,但对(110)面衍射峰的影响较大,因而温度对AlN的择优取向有一定影响.AlN(100)峰半高宽随温度升高而减小,表明晶粒尺寸随温度升高有变大趋势.随沉积温度升高,薄膜硬度从150℃的8 GPa增加到350℃的10 GPa左右,随基底温度升高,薄膜的硬度增加.弹性模量随温度的变化趋势与硬度的基本一致.在可见光区域AlN薄膜透过率超过90%,基本属于透明膜.基底温度对薄膜折射率也有较明显影响,折射率大致随温度升高而增大,但由椭偏测试及透射谱线分析得到的厚度结果表明,随温度升高,AlN薄膜的沉积速率下降.%Aluminum nitride ( A1N) thin films were reactively deposited onto glass substrates using reactive magnetron sputtering with a temperature-controllable heater. Hie phase and structure of the films were analyzed using X-ray diffraction (XRD). Nano-indenter and ellipsometer as well as grating spectrograph were employed to characterize hardness, elastic module, and optical properties of the films. The effects of substrate temperature on the structure and properties of the A1N films were intensely analyzed and studied. Hie results showed that the A1N films fabricated by this method were crystalline with a hexagonal structure. Hie deposition temperature influenced the preferred orientation of the films. It seemed that the plane (110) of A1N was more sensitive to temperature than the plane (100). The full width of half maximum (FWHM) of peak (100

  15. Cubic boron nitride based composites for cutting applications

    Directory of Open Access Journals (Sweden)

    P. Klimczyk

    2011-02-01

    Full Text Available Purpose: The aim of our work was to obtain durable fined-grained cBN-Si3N4 composite with high values of hardness and fracture toughness, which can be successfully used as a cutting tool. Little quantity of the Si3N4 nanopowder fills up the porous between cBN grains thus result in resistance to crack propagation by means so called “crack deflection” mechanism.Design/methodology/approach: Two variants of the cBN-Si3N4 composites („I” – with micropowder cBN and „II” – with mixture of micro- and nanopowdes cBN contained 3% of nanodispersed Si3N4 powder, have been sintered at High Pressure – High Temperature (HPHT conditions. Basic physical-mechanical properties, phase composition and microstructure of sintered materials have been investigated.Findings: The comparison of the mechanical properties of cBN-Si3N4 (I and cBN-Si3N4 (II composites showed that the addition of 10% cBN nanopowder to mixture caused small increase in hardness from 4750 up to 4855 HV10 and decrease in Young’s modulus from 842 to 812 GPa. Fracture toughness of both type of composites is on the same level above 10 MPa∙m1/2.Research limitations/implications: High hardness of cBN-Si3N4 composites present a technical challenge in shaping of them. Commercial application of presented materials, e.g. cutting tools production, needs to develop a high efficient cutting, lapping and grinding techniques.Practical implications: The material obtained could be successfully applied for different cutting applications due to its favourable combination of hardness and fracture toughness.Originality/value: Commercial superhard materials, so called “high content cBN composites”, have usually 10-20 vol% of binding phase, often in the form of Ti or/and Al compounds. In the presented work only 3% of Si3N4 phase was used as a sintering aid. The high content of cBN phase allows to keep Young’s modulus and hardness values close to the theoretical ones for pure PcBN.

  16. Guarded Cubical Type Theory

    DEFF Research Database (Denmark)

    Birkedal, Lars; Bizjak, Aleš; Clouston, Ranald;

    2016-01-01

    This paper improves the treatment of equality in guarded dependent type theory (GDTT), by combining it with cubical type theory (CTT). GDTT is an extensional type theory with guarded recursive types, which are useful for building models of program logics, and for programming and reasoning with co...

  17. Formation Mechanisms of Alloying Element Nitrides in Recrystallized and Deformed Ferritic Fe-Cr-Al Alloy

    Science.gov (United States)

    Akhlaghi, Maryam; Meka, Sai Ramudu; Jägle, Eric A.; Kurz, Silke J. B.; Bischoff, Ewald; Mittemeijer, Eric J.

    2016-09-01

    The effect of the initial microstructure (recrystallized or cold-rolled) on the nitride precipitation process upon gaseous nitriding of ternary Fe-4.3 at. pct Cr-8.1 at. pct Al alloy was investigated at 723 K (450 °C) employing X-ray diffraction (XRD) analyses, transmission electron microscopy (TEM), atom probe tomography (APT), and electron probe microanalysis (EPMA). In recrystallized Fe-Cr-Al specimens, one type of nitride develops: ternary, cubic, NaCl-type mixed Cr1- x Al x N. In cold-rolled Fe-Cr-Al specimens, precipitation of two types of nitrides occurs: ternary, cubic, NaCl-type mixed Cr1- x Al x N and binary, cubic, NaCl-type AlN. By theoretical analysis, it was shown that for the recrystallized specimens an energy barrier for the nucleation of mixed Cr1- x Al x N exists, whereas in the cold-rolled specimens no such energy barriers for the development of mixed Cr1- x Al x N and of binary, cubic AlN occur. The additional development of the cubic AlN in the cold-rolled microstructure could be ascribed to the preferred heterogeneous nucleation of cubic AlN on dislocations. The nitrogen concentration-depth profile of the cold-rolled specimen shows a stepped nature upon prolonged nitriding as a consequence of instantaneous nucleation of nitride upon arrival of nitrogen and nitride growth rate-limited by nitrogen transport through the thickening nitrided zone.

  18. Guarded Cubical Type Theory

    DEFF Research Database (Denmark)

    Birkedal, Lars; Bizjak, Aleš; Clouston, Ranald;

    2016-01-01

    This paper improves the treatment of equality in guarded dependent type theory (GDTT), by combining it with cubical type theory (CTT). GDTT is an extensional type theory with guarded recursive types, which are useful for building models of program logics, and for programming and reasoning...... with coinductive types. We wish to implement GDTT with decidable type-checking, while still supporting non-trivial equality proofs that reason about the extensions of guarded recursive constructions. CTT is a variation of Martin-L\\"of type theory in which the identity type is replaced by abstract paths between...... terms. CTT provides a computational interpretation of functional extensionality, is conjectured to have decidable type checking, and has an implemented type-checker. Our new type theory, called guarded cubical type theory, provides a computational interpretation of extensionality for guarded recursive...

  19. Guarded Cubical Type Theory

    DEFF Research Database (Denmark)

    Birkedal, Lars; Bizjak, Aleš; Clouston, Ranald;

    2016-01-01

    This paper improves the treatment of equality in guarded dependent type theory (GDTT), by combining it with cubical type theory (CTT). GDTT is an extensional type theory with guarded recursive types, which are useful for building models of program logics, and for programming and reasoning...... with coinductive types. We wish to implement GDTT with decidable type checking, while still supporting non-trivial equality proofs that reason about the extensions of guarded recursive constructions. CTT is a variation of Martin-L\\"of type theory in which the identity type is replaced by abstract paths between...... terms. CTT provides a computational interpretation of functional extensionality, enjoys canonicity for the natural numbers type, and is conjectured to support decidable type-checking. Our new type theory, guarded cubical type theory (GCTT), provides a computational interpretation of extensionality...

  20. Continuous Fiber Ceramic Composite (CFCC) Program: Gaseous Nitridation

    Energy Technology Data Exchange (ETDEWEB)

    R. Suplinskas G. DiBona; W. Grant

    2001-10-29

    Textron has developed a mature process for the fabrication of continuous fiber ceramic composite (CFCC) tubes for application in the aluminum processing and casting industry. The major milestones in this project are System Composition; Matrix Formulation; Preform Fabrication; Nitridation; Material Characterization; Component Evaluation

  1. Multipactor suppressing titanium nitride thin films analyzed through XPS and AES

    Energy Technology Data Exchange (ETDEWEB)

    Castro C, M.; Durrer, W.; Lopez, J. A.; Pinales, L. A. [Physics Department, University of Texas, El Paso TX 79968 (United States); Encinas B, C.; Moller, D. [Centro de Investigacion en Materiales Avanzados S. C., Miguel de Cervantes Saavedra 120, Complejo Industrial Chihuahua, 31109 Chihuahua (Mexico)

    2008-02-15

    Cathodic-magnetron-deposited titanium nitride films were grown on anodized aluminum substrates and studied via AES and XPS spectroscopies to determine their depth-dependence composition. As it is well known, the native oxide grown on aluminum does not make the substrate impervious to radio frequency damage, and typically a thin film coating is needed to suppress substrate damage. In this article we present the profile composition of titanium nitride films, used as a protective coating for aluminum, that underwent prior conditioning through anodization, observed after successive sputtering stages. (Author)

  2. Cellular Precipitation at a 17-7 PH Stainless Steel Interphase Interface During Low-Temperature Nitridation

    Science.gov (United States)

    Wang, Danqi; Ernst, Frank; Kahn, Harold; Heuer, Arthur H.

    2014-07-01

    Cellular precipitation of Cr-rich nitrides was observed at an austenite-ferrite interface in 17-7 PH stainless steel after low-temperature nitridation. Fine-scale lamellar rocksalt-structured nitride (MN1- x , M: randomly distributed Fe, Cr, and Al) was identified at the interfaces between austenite and ferrite by local-electrode atom-probe tomography and transmission electron microscopy. The small size and spacing of the nitride lamellae reflect the low mobility of substitutional atoms under the conditions of low-temperature nitridation. Nitrides of the same structure were formed within the ferrite grain as extremely small particles. The face-centered cubic nitride precipitates in the Bain orientation relationship with the ferrite.

  3. Colloidal Plasmonic Titanium Nitride Nanoparticles: Properties and Applications

    Directory of Open Access Journals (Sweden)

    Guler Urcan

    2015-01-01

    Full Text Available Optical properties of colloidal plasmonic titanium nitride nanoparticles are examined with an eye on their photothermal and photocatalytic applications via transmission electron microscopy and optical transmittance measurements. Single crystal titanium nitride cubic nanoparticles with an average size of 50 nm, which was found to be the optimum size for cellular uptake with gold nanoparticles [1], exhibit plasmon resonance in the biological transparency window and demonstrate a high absorption efficiency. A self-passivating native oxide at the surface of the nanoparticles provides an additional degree of freedom for surface functionalization. The titanium oxide shell surrounding the plasmonic core can create new opportunities for photocatalytic applications.

  4. Anisotropic cubic curvature couplings

    CERN Document Server

    Bailey, Quentin G

    2016-01-01

    To complement recent work on tests of spacetime symmetry in gravity, cubic curvature couplings are studied using an effective field theory description of spacetime-symmetry breaking. The associated mass dimension 8 coefficients for Lorentz violation studied do not result in any linearized gravity modifications and instead are revealed in the first nonlinear terms in an expansion of spacetime around a flat background. We consider effects on gravitational radiation through the energy loss of a binary system and we study two-body orbital perturbations using the post-Newtonian metric. Some effects depend on the internal structure of the source and test bodies, thereby breaking the Weak Equivalence Principle for self-gravitating bodies. These coefficients can be measured in solar-system tests, while binary-pulsar systems and short-range gravity tests are particularly sensitive.

  5. Methods of forming boron nitride

    Science.gov (United States)

    Trowbridge, Tammy L; Wertsching, Alan K; Pinhero, Patrick J; Crandall, David L

    2015-03-03

    A method of forming a boron nitride. The method comprises contacting a metal article with a monomeric boron-nitrogen compound and converting the monomeric boron-nitrogen compound to a boron nitride. The boron nitride is formed on the same or a different metal article. The monomeric boron-nitrogen compound is borazine, cycloborazane, trimethylcycloborazane, polyborazylene, B-vinylborazine, poly(B-vinylborazine), or combinations thereof. The monomeric boron-nitrogen compound is polymerized to form the boron nitride by exposure to a temperature greater than approximately 100.degree. C. The boron nitride is amorphous boron nitride, hexagonal boron nitride, rhombohedral boron nitride, turbostratic boron nitride, wurzite boron nitride, combinations thereof, or boron nitride and carbon. A method of conditioning a ballistic weapon and a metal article coated with the monomeric boron-nitrogen compound are also disclosed.

  6. Methods of forming boron nitride

    Energy Technology Data Exchange (ETDEWEB)

    Trowbridge, Tammy L; Wertsching, Alan K; Pinhero, Patrick J; Crandall, David L

    2015-03-03

    A method of forming a boron nitride. The method comprises contacting a metal article with a monomeric boron-nitrogen compound and converting the monomeric boron-nitrogen compound to a boron nitride. The boron nitride is formed on the same or a different metal article. The monomeric boron-nitrogen compound is borazine, cycloborazane, trimethylcycloborazane, polyborazylene, B-vinylborazine, poly(B-vinylborazine), or combinations thereof. The monomeric boron-nitrogen compound is polymerized to form the boron nitride by exposure to a temperature greater than approximately 100.degree. C. The boron nitride is amorphous boron nitride, hexagonal boron nitride, rhombohedral boron nitride, turbostratic boron nitride, wurzite boron nitride, combinations thereof, or boron nitride and carbon. A method of conditioning a ballistic weapon and a metal article coated with the monomeric boron-nitrogen compound are also disclosed.

  7. Methods for improved growth of group III nitride buffer layers

    Energy Technology Data Exchange (ETDEWEB)

    Melnik, Yurity; Chen, Lu; Kojiri, Hidehiro

    2014-07-15

    Methods are disclosed for growing high crystal quality group III-nitride epitaxial layers with advanced multiple buffer layer techniques. In an embodiment, a method includes forming group III-nitride buffer layers that contain aluminum on suitable substrate in a processing chamber of a hydride vapor phase epitaxy processing system. A hydrogen halide or halogen gas is flowing into the growth zone during deposition of buffer layers to suppress homogeneous particle formation. Some combinations of low temperature buffers that contain aluminum (e.g., AlN, AlGaN) and high temperature buffers that contain aluminum (e.g., AlN, AlGaN) may be used to improve crystal quality and morphology of subsequently grown group III-nitride epitaxial layers. The buffer may be deposited on the substrate, or on the surface of another buffer. The additional buffer layers may be added as interlayers in group III-nitride layers (e.g., GaN, AlGaN, AlN).

  8. Methods for improved growth of group III nitride buffer layers

    Science.gov (United States)

    Melnik, Yurity; Chen, Lu; Kojiri, Hidehiro

    2014-07-15

    Methods are disclosed for growing high crystal quality group III-nitride epitaxial layers with advanced multiple buffer layer techniques. In an embodiment, a method includes forming group III-nitride buffer layers that contain aluminum on suitable substrate in a processing chamber of a hydride vapor phase epitaxy processing system. A hydrogen halide or halogen gas is flowing into the growth zone during deposition of buffer layers to suppress homogeneous particle formation. Some combinations of low temperature buffers that contain aluminum (e.g., AlN, AlGaN) and high temperature buffers that contain aluminum (e.g., AlN, AlGaN) may be used to improve crystal quality and morphology of subsequently grown group III-nitride epitaxial layers. The buffer may be deposited on the substrate, or on the surface of another buffer. The additional buffer layers may be added as interlayers in group III-nitride layers (e.g., GaN, AlGaN, AlN).

  9. Generation and Characteristics of IV-VI transition Metal Nitride and Carbide Nanoparticles using a Reactive Mesoporous Carbon Nitride

    KAUST Repository

    Alhajri, Nawal Saad

    2016-02-22

    Interstitial nitrides and carbides of early transition metals in groups IV–VI exhibit platinum-like electronic structures, which make them promising candidates to replace noble metals in various catalytic reactions. Herein, we present the preparation and characterization of nano-sized transition metal nitries and carbides of groups IV–VI (Ti, V, Nb, Ta, Cr, Mo, and W) using mesoporous graphitic carbon nitride (mpg-C3N4), which not only provides confined spaces for restricting primary particle size but also acts as a chemical source of nitrogen and carbon. We studied the reactivity of the metals with the template under N2 flow at 1023 K while keeping the weight ratio of metal to template constant at unity. The produced nanoparticles were characterized by powder X-ray diffraction, CHN elemental analysis, nitrogen sorption, X-ray photoelectron spectroscopy, and transmission electron microscopy. The results show that Ti, V, Nb, Ta, and Cr form nitride phases with face centered cubic structure, whereas Mo and W forme carbides with hexagonal structures. The tendency to form nitride or carbide obeys the free formation energy of the transition metal nitrides and carbides. This method offers the potential to prepare the desired size, shape and phase of transition metal nitrides and carbides that are suitable for a specific reaction, which is the chief objective of materials chemistry.

  10. Wear monitoring of protective nitride coatings using image processing

    DEFF Research Database (Denmark)

    Rasmussen, Inge Lise; Guibert, M.; Belin, M.

    2010-01-01

    A double-layer model system, consisting of a thin layer of tribological titanium aluminum nitride (TiAlN) on 17 top of titanium nitride (TiN), was deposited on polished 100Cr6 steel substrates. The TiAlN top-coatings 18 were exposed to abrasive wear by a reciprocating wear process in a linear tribo...... processing by color detection is a potential technique for early 25 warning or determination of residual thickness of tribological tool coatings prior to complete wear....

  11. Double Sided Si(Ge)/Sapphire/III-Nitride Hybrid Structure

    Science.gov (United States)

    Park, Yeonjoon (Inventor); Choi, Sang Hyouk (Inventor)

    2016-01-01

    One aspect of the present invention is a double sided hybrid crystal structure including a trigonal Sapphire wafer containing a (0001) C-plane and having front and rear sides. The Sapphire wafer is substantially transparent to light in the visible and infrared spectra, and also provides insulation with respect to electromagnetic radio frequency noise. A layer of crystalline Si material having a cubic diamond structure aligned with the cubic direction on the (0001) C-plane and strained as rhombohedron to thereby enable continuous integration of a selected (SiGe) device onto the rear side of the Sapphire wafer. The double sided hybrid crystal structure further includes an integrated III-Nitride crystalline layer on the front side of the Sapphire wafer that enables continuous integration of a selected III-Nitride device on the front side of the Sapphire wafer.

  12. The Growth of Gallium Nitride Films via the Innovative Technique of Atomic Layer Epitaxy

    Science.gov (United States)

    1989-06-01

    6 3.2 Aluminum Nitride and AIN/GaN Layered Structures ............ 8 3.3 Boron Nitride and BGaN Graded...of tearing in lower left region, indirectly indicating the presence of multiple layers of BGaN ............................... 14 12. Auger electron...electron spectroscopy sputtered depth profile of a BN/ BGaN /GaN/P-SiC film. Note peak in nitrogen trace as interface of BN is passed

  13. Growth of crystalline ZnO films on the nitridated (0001) sapphire surface

    Energy Technology Data Exchange (ETDEWEB)

    Butashin, A. V.; Kanevsky, V. M.; Muslimov, A. E., E-mail: amuslimov@mail.ru; Prosekov, P. A.; Kondratev, O. A.; Blagov, A. E.; Vasil’ev, A. L.; Rakova, E. V. [Russian Academy of Sciences, Shubnikov Institute of Crystallography (Russian Federation); Babaev, V. A.; Ismailov, A. M. [Dagestan State University (Russian Federation); Vovk, E. A.; Nizhankovsky, S. V. [National Academy of Sciences of Ukraine, Institute for Single Crystals (Ukraine)

    2015-07-15

    The surface morphology and structure of (0001) sapphire substrates subjected to thermochemical nitridation in a mixture of N{sub 2}, CO, and H{sub 2} gases are investigated by electron and probe microscopy and X-ray and electron diffraction. It is shown that an aluminum nitride layer is formed on the substrate surface and heteroepitaxial ZnO films deposited onto such substrates by magnetron sputtering have a higher quality when compared with films grown on sapphire.

  14. A Cubic Tree Taper Model

    National Research Council Canada - National Science Library

    Goodwin, Adrian N

    2009-01-01

    A flexible tree taper model based on a cubic polynomial is described. It is algebraically invertible and integrable, and can be constrained by one or two diameters, neither of which need be diameter at breast height (DBH...

  15. Suspended HfO{sub 2} photonic crystal slab on III-nitride/Si platform

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Yongjin; Feng, Jiao; Cao, Ziping; Zhu, Hongbo [Nanjing University of Posts and Telecommunications, Grueenberg Research Centre, Nanjing, Jiang-Su (China)

    2014-06-15

    We present here the fabrication of suspended hafnium oxide (HfO{sub 2}) photonic crystal slab on a III-nitride/Si platform. The calculations are performed to model the suspended HfO{sub 2} photonic crystal slab. Aluminum nitride (AlN) film is employed as the sacrificial layer to form air gap. Photonic crystal patterns are defined by electron beam lithography and transferred into HfO{sub 2} film, and suspended HfO{sub 2} photonic crystal slab is achieved on a III-nitride/Si platform through wet-etching of AlN layer in the alkaline solution. The method is promising for the fabrication of suspended HfO{sub 2} nanostructures incorporating into a III-nitride/Si platform, or acting as the template for epitaxial growth of III-nitride materials. (orig.)

  16. Improving electrochemical properties of AISI 1045 steels by duplex surface treatment of plasma nitriding and aluminizing

    Energy Technology Data Exchange (ETDEWEB)

    Haftlang, Farahnaz, E-mail: f.haftlang@students.semnan.ac.ir [Department of Metallurgy and Materials Engineering, Faculty of Engineering, Semnan University, Semnan (Iran, Islamic Republic of); Habibolahzadeh, Ali [Department of Metallurgy and Materials Engineering, Faculty of Engineering, Semnan University, Semnan (Iran, Islamic Republic of); Sohi, Mahmoud Heydarzadeh [School of Metallurgy and Materials, College of Engineering, University of Tehran, Tehran (Iran, Islamic Republic of)

    2015-02-28

    Highlights: • AlN coating was applied on AISI 1045 steel via plasma nitriding and aluminizing. • Plasma nitriding and post-aluminizing result in AlN single phase layer on the steel. • PN–Al coated steel had better corrosion resistance than Al–PN one. • Formation of oxide layer provided protection of PN–Al coated steel against corrosion. • Pitting and surface defects was the dominant corrosion mechanism in Al–PN coated steel. - Abstract: Improvement in electrochemical behavior of AISI 1045 steel after applying aluminum nitride coating was investigated in 3.5% NaCl solution, using potentiodynamic polarization and electrochemical impedance spectroscopy (EIS) analyses. Aluminum nitride coating was applied on the steel surface by duplex treatment of pack aluminizing and plasma nitriding. Some specimens were plasma nitrided followed by aluminizing (PN–Al), while the others were pack aluminized followed by plasma nitriding (Al–PN). Topological and structural studies of the modified surfaces were conducted using scanning electron microscope (SEM) equipped by energy dispersive X-ray spectroscope (EDS), and X-ray diffractometer (XRD). The electrochemical measurements showed that the highest corrosion and polarization (R{sub p}) resistances were obtained in PN–Al specimens, having single phase superficial layer of AlN. Pitting mechanism was dominant reason of lower corrosion resistance in the Al–PN specimens.

  17. Gallium nitride optoelectronic devices

    Science.gov (United States)

    Chu, T. L.; Chu, S. S.

    1972-01-01

    The growth of bulk gallium nitride crystals was achieved by the ammonolysis of gallium monochloride. Gallium nitride single crystals up to 2.5 x 0.5 cm in size were produced. The crystals are suitable as substrates for the epitaxial growth of gallium nitride. The epitaxial growth of gallium nitride on sapphire substrates with main faces of (0001) and (1T02) orientations was achieved by the ammonolysis of gallium monochloride in a gas flow system. The grown layers had electron concentrations in the range of 1 to 3 x 10 to the 19th power/cu cm and Hall mobilities in the range of 50 to 100 sq cm/v/sec at room temperature.

  18. Boron Nitride Nanotubes

    Science.gov (United States)

    Smith, Michael W. (Inventor); Jordan, Kevin (Inventor); Park, Cheol (Inventor)

    2012-01-01

    Boron nitride nanotubes are prepared by a process which includes: (a) creating a source of boron vapor; (b) mixing the boron vapor with nitrogen gas so that a mixture of boron vapor and nitrogen gas is present at a nucleation site, which is a surface, the nitrogen gas being provided at a pressure elevated above atmospheric, e.g., from greater than about 2 atmospheres up to about 250 atmospheres; and (c) harvesting boron nitride nanotubes, which are formed at the nucleation site.

  19. Hardening Roll Surface by Plasma Nitriding with Subsequent Hardfacing

    Science.gov (United States)

    Pesin, A.; Pustovoytov, D.; Vafin, R.; Yagafarov, I.; Vardanyan, E.

    2017-05-01

    The wear of the surface layer of rolls after ion nitriding in glow discharge, followed by a coating of TiN -TiAlN plasma arc are studied and simulated. stress-strain state of the material rolls under asymmetric rolling with ultra-high shear deformations is simulated. The effect of thermal fields, formed upon contact of the tool and a deformable sheet, the structure of aluminum alloys, are considered.

  20. First principles calculations of interstitial and lamellar rhenium nitrides

    Energy Technology Data Exchange (ETDEWEB)

    Soto, G., E-mail: gerardo@cnyn.unam.mx [Universidad Nacional Autonoma de Mexico, Centro de Nanociencias y Nanotecnologia, Km 107 Carretera Tijuana-Ensenada, Ensenada Baja California (Mexico); Tiznado, H.; Reyes, A.; Cruz, W. de la [Universidad Nacional Autonoma de Mexico, Centro de Nanociencias y Nanotecnologia, Km 107 Carretera Tijuana-Ensenada, Ensenada Baja California (Mexico)

    2012-02-15

    Highlights: Black-Right-Pointing-Pointer The possible structures of rhenium nitride as a function of composition are analyzed. Black-Right-Pointing-Pointer The alloying energy is favorable for rhenium nitride in lamellar arrangements. Black-Right-Pointing-Pointer The structures produced by magnetron sputtering are metastable variations. Black-Right-Pointing-Pointer The structures produced by high-pressure high-temperature are stable configurations. Black-Right-Pointing-Pointer The lamellar structures are a new category of interstitial dissolutions. - Abstract: We report here a systematic first principles study of two classes of variable-composition rhenium nitride: i, interstitial rhenium nitride as a solid solution and ii, rhenium nitride in lamellar structures. The compounds in class i are cubic and hexagonal close-packed rhenium phases, with nitrogen in the octahedral and tetrahedral interstices of the metal, and they are formed without changes to the structure, except for slight distortions of the unit cells. In the compounds in class ii, by contrast, the nitrogen inclusion provokes stacking faults in the parent metal structure. These faults create trigonal-prismatic sites where the nitrogen residence is energetically favored. This second class of compounds produces lamellar structures, where the nitrogen lamellas are inserted among multiple rhenium layers. The Re{sub 3}N and Re{sub 2}N phases produced recently by high-temperature and high-pressure synthesis belong to this class. The ratio of the nitrogen layers to the rhenium layers is given by the composition. While the first principle calculations point to higher stability for the lamellar structures as opposed to the interstitial phases, the experimental evidence presented here demonstrates that the interstitial classes are synthesizable by plasma methods. We conclude that rhenium nitrides possess polymorphism and that the two-dimensional lamellar structures might represent an emerging class of materials

  1. Nitrogen Availability Of Nitriding Atmosphere In Controlled Gas Nitriding Processes

    Directory of Open Access Journals (Sweden)

    Michalski J.

    2015-06-01

    Full Text Available Parameters which characterize the nitriding atmosphere in the gas nitriding process of steel are: the nitriding potential KN, ammonia dissociation rate α and nitrogen availabilitymN2. The article discusses the possibilities of utilization of the nitriding atmosphere’s nitrogen availability in the design of gas nitriding processes of alloyed steels in atmospheres derived from raw ammonia, raw ammonia diluted with pre-dissociated ammonia, with nitrogen, as well as with both nitrogen and pre-dissociated ammonia. The nitriding processes were accomplished in four series. The parameters selected in the particular processes were: process temperature (T, time (t, value of nitriding potential (KN, corresponding to known dissociation rate of the ammonia which dissociates during the nitriding process (α. Variable parameters were: nitrogen availability (mN2, composition of the ingoing atmosphere and flow rate of the ingoing atmosphere (FIn.

  2. Low temperature synthesis of nanocrystalline titanium nitride from a single-source precursor of titanium and nitrogen

    Energy Technology Data Exchange (ETDEWEB)

    Wu Meining, E-mail: wmn-wz@163.co [Oujiang College, Wenzhou University, Wenzhou, Zhejiang 325027 (China)

    2009-11-03

    Nanocrystalline titanium nitride has been prepared via a convenient route from a single-source precursor of titanium and nitrogen (ammonium fluotitanate) in an autoclave at 650 deg. C. X-ray powder diffraction patterns indicate that the product is cubic titanium nitride, and the cell constant is a = 4.235 A. Transmission electron microscopy image shows that it consists of particles with an average size of about 40 nm in diameter. The product was also studied by BET and TGA.

  3. Universal Reconfiguration of (Hyper-)cubic Robots

    OpenAIRE

    Abel, Zachary; Kominers, Scott D.

    2008-01-01

    We study a simple reconfigurable robot model which has not been previously examined: cubic robots comprised of three-dimensional cubic modules which can slide across each other and rotate about each others' edges. We demonstrate that the cubic robot model is universal, i.e., that an n-module cubic robot can reconfigure itself into any specified n-module configuration. Additionally, we provide an algorithm that efficiently plans and executes cubic robot motion. Our results directly extend to a...

  4. Metal Nitrides for Plasmonic Applications

    DEFF Research Database (Denmark)

    Naik, Gururaj V.; Schroeder, Jeremy; Guler, Urcan;

    2012-01-01

    Metal nitrides as alternatives to metals such as gold could offer many advantages when used as plasmonic material. We show that transition metal nitrides can replace metals providing equally good optical performance for many plasmonic applications.......Metal nitrides as alternatives to metals such as gold could offer many advantages when used as plasmonic material. We show that transition metal nitrides can replace metals providing equally good optical performance for many plasmonic applications....

  5. Elastic properties of indium nitrides grown on sapphire substrates determined by nano-indentation: In comparison with other nitrides

    Directory of Open Access Journals (Sweden)

    Ichiro Yonenaga

    2015-07-01

    Full Text Available The hardness of wurtzite indium nitride (α-InN films of 0.5 to 4 μm in thickness was measured by the nano-indentation method at room temperature. After investigation of crystalline quality by x-ray diffraction, the hardness and Young’s modulus were determined to be 8.8 ± 0.4 and 184 ± 5 GPa, respectively, for the In (0001- and N ( 000 1 ̄ -growth faces of InN films. The bulk and shear moduli were then derived to be 99 ± 3 and 77 ± 2 GPa, respectively. The Poisson’s ratio was evaluated to be 0.17 ± 0.03. The results were examined comprehensively in comparison with previously reported data of InN as well as those of other nitrides of aluminum nitride and gallium nitride. The underlying physical process determining the moduli and hardness was examined in terms of atomic bonding and dislocation energy of the nitrides and wurtzite zinc oxide.

  6. Aluminum alloy

    Science.gov (United States)

    Blackburn, Linda B. (Inventor); Starke, Edgar A., Jr. (Inventor)

    1989-01-01

    This invention relates to aluminum alloys, particularly to aluminum-copper-lithium alloys containing at least about 0.1 percent by weight of indium as an essential component, which are suitable for applications in aircraft and aerospace vehicles. At least about 0.1 percent by weight of indium is added as an essential component to an alloy which precipitates a T1 phase (Al2CuLi). This addition enhances the nucleation of the precipitate T1 phase, producing a microstructure which provides excellent strength as indicated by Rockwell hardness values and confirmed by standard tensile tests.

  7. CHARACTERIZATION OF NEW TOOL STEEL FOR ALUMINUM EXTRUSION DIES

    Directory of Open Access Journals (Sweden)

    José Britti Bacalhau

    2014-06-01

    Full Text Available Aluminum extrusion dies are an important segment of application on industrial tools steels, which are manufactured in steels based on AISI H13 steel. The main properties of steels applied to extrusion dies are: wear resistance, impact resistance and tempering resistance. The present work discusses the characteristics of a newly developed hot work steel to be used on aluminum extrusion dies. The effects of Cr and Mo contents with respect to tempering resistance and the Al addition on the nitriding response have been evaluated. From forged steel bars, Charpy impact test and characterization via EPMA have been conducted. The proposed contents of Cr, Mo, and Al have attributed to the new VEX grade a much better tempering resistance than H13, as well as a deeper and harder nitrided layer. Due to the unique characteristics, this new steel provides an interesting alternative to the aluminum extrusion companies to increase their competitiveness.

  8. Molybdenum Nitride Films: Crystal Structures, Synthesis, Mechanical, Electrical and Some Other Properties

    Directory of Open Access Journals (Sweden)

    Isabelle Jauberteau

    2015-10-01

    Full Text Available Among transition metal nitrides, molybdenum nitrides have been much less studied even though their mechanical properties as well as their electrical and catalytic properties make them very attractive for many applications. The δ-MoN phase of hexagonal structure is a potential candidate for an ultra-incompressible and hard material and can be compared with c-BN and diamond. The predicted superconducting temperature of the metastable MoN phase of NaCl-B1-type cubic structure is the highest of all refractory carbides and nitrides. The composition of molybdenum nitride films as well as the structures and properties depend on the parameters of the process used to deposit the films. They are also strongly correlated to the electronic structure and chemical bonding. An unusual mixture of metallic, covalent and ionic bonding is found in the stoichiometric compounds.

  9. Cubication of Conservative Nonlinear Oscillators

    Science.gov (United States)

    Belendez, Augusto; Alvarez, Mariela L.; Fernandez, Elena; Pascual, Immaculada

    2009-01-01

    A cubication procedure of the nonlinear differential equation for conservative nonlinear oscillators is analysed and discussed. This scheme is based on the Chebyshev series expansion of the restoring force, and this allows us to approximate the original nonlinear differential equation by a Duffing equation in which the coefficients for the linear…

  10. Cryptographic Analysis in Cubic Time

    DEFF Research Database (Denmark)

    Nielson, Flemming; Nielson, Hanne Riis; Seidl, H.

    2004-01-01

    The spi-calculus is a variant of the polyadic pi-calculus that admits symmetric cryptography and that admits expressing communication protocols in a precise though still abstract way. This paper shows that context-independent control flow analysis can be calculated in cubic time despite the fact ...

  11. The diagonalization of cubic matrices

    Science.gov (United States)

    Cocolicchio, D.; Viggiano, M.

    2000-08-01

    This paper is devoted to analysing the problem of the diagonalization of cubic matrices. We extend the familiar algebraic approach which is based on the Cardano formulae. We rewrite the complex roots of the associated resolvent secular equation in terms of transcendental functions and we derive the diagonalizing matrix.

  12. Nitride quantum light sources

    Science.gov (United States)

    Zhu, T.; Oliver, R. A.

    2016-02-01

    Prototype nitride quantum light sources, particularly single-photon emitters, have been successfully demonstrated, despite the challenges inherent in this complex materials system. The large band offsets available between different nitride alloys have allowed device operation at easily accessible temperatures. A wide range of approaches has been explored: not only self-assembled quantum dot growth but also lithographic methods for site-controlled nanostructure formation. All these approaches face common challenges, particularly strong background signals which contaminate the single-photon stream and excessive spectral diffusion of the quantum dot emission wavelength. If these challenges can be successfully overcome, then ongoing rapid progress in the conventional III-V semiconductors provides a roadmap for future progress in the nitrides.

  13. Analysis of hardness of nanocrystalline coatings of aluminum-rich Ti1−AlN

    Indian Academy of Sciences (India)

    J Hernández-Torres; L García-González; L Zamora-Peredo; T Hernández-Quiroz; A Sauceda-Carvajal; P J García-Ramírez; N Flores-Ramírez

    2012-10-01

    Titanium aluminum nitride coatings were fabricated by a d.c.magnetron sputtering system from a Ti–Al (60/40wt%) target. Coatings were deposited on steel substrates, at a substrate temperature of 250 °C and a bias voltage of –80 V. The nitrogen flow was varied from 1.5–6 sccm and the Ar flow was kept constant at 20 sccm. The morphology and microstructure of the coatings were analysed by X-ray diffraction and scanning electron microscopy. The results of X-ray diffraction showed the presence of two cubic crystalline phases, TiN and AlN, which were confirmed by X-ray photoelectron spectroscopy. The Vicker hardness was obtained by the effective model of indentation. It was observed that the hardness of the coatings decreases from 22.8–9.5 GPa with an increased nitrogen content from 1.5–4.5 sccm. Subsequently, the hardness increased to 22.1 GPa by increasing nitrogen to 6 sccm. The behavior of hardness with grain size variation is consistent with the Hall-Peth relationship. The high value in the hardness of the coatings is mainly attributed to small grain sizes and the compressive stress present.

  14. Surface structure and properties of ion-nitrided austenitic stainless steels

    Energy Technology Data Exchange (ETDEWEB)

    Hannula, S.P.; Nenonen, P. (Metallurgy Lab., Technical Research Centre, Espoo (Finland)); Hirvonen, J.P. (Dept. of Physics, Univ. of Helsinki (Finland))

    1989-12-10

    The near surface structure and nitrogen concentration of the low-temperature low-pressure ion-nitrided stainless steels (SS) was studied by using X-ray diffraction (XRD), transmission electron microscopy (TEM), nuclear resonance broadening (NRB) and microhardness techniques. The surface nitrogen content as determined by NRB was found to increase with nitriding time such that at long nitriding times the surface nitrogen concentration was higher than for any equilibrium nitride in the Fe-N system. Nitrogen contents were slightly higher for type-304 than for type-316 stainless steels. Simultaneously with increasing surface nitrogen content, a strong shift and broadening of X-ray diffraction peaks occured. In the surface of the nitrided layer expanded austenite as well as {epsilon}-phase analogous to {epsilon}-martensite is formed. At long nitriding times (high nitrogen surface contents) the structure of the surface corresponds to cubic MN{sub 1-x} nitride. At intermediate nitriding times (and nitrogen contents) possibly some {epsilon}'-nitride is also formed. TEM study of the surface layer showed that after long nitriding times the expanded austenite with occasional weak primitive lattice reflections was the dominating phase and the hexagonal {epsilon}-phase was habited as thin platelets on the (111) planes of the nitrogen supersaturated austenite. The hardness of the compound layer can be as high as 25 GPa. The high hardness is suggested to result from nitrogen supersaturation, high dislocation density and thin platelets of {epsilon}-phase in the surface of the compound layer. (orig.).

  15. Estimations of the spontaneous polarization of binary and ternary compounds of group III nitrides

    Science.gov (United States)

    Davydov, S. Yu.; Posrednik, O. V.

    2016-04-01

    The dependences of spontaneous polarizations P sp of solid solutions of aluminum, gallium, and indium nitrides on the compositions were estimated using the Harrison bond-orbital method. A simple formula was proposed to estimate P sp using only lengths of the interatomic bonds between the nearest neighbor atoms and the angles between these bonds.

  16. Cubication of conservative nonlinear oscillators

    Energy Technology Data Exchange (ETDEWEB)

    Belendez, Augusto; Alvarez, Mariela L [Departamento de Fisica, Ingenieria de Sistemas y Teoria de la Senal, Universidad de Alicante, Apartado 99, E-03080 Alicante (Spain); Fernandez, Elena; Pascual, Inmaculada [Departamento de Optica, FarmacologIa y Anatomia, Universidad de Alicante, Apartado 99, E-03080 Alicante (Spain)], E-mail: a.belendez@ua.es

    2009-09-15

    A cubication procedure of the nonlinear differential equation for conservative nonlinear oscillators is analysed and discussed. This scheme is based on the Chebyshev series expansion of the restoring force, and this allows us to approximate the original nonlinear differential equation by a Duffing equation in which the coefficients for the linear and cubic terms depend on the initial amplitude, A, while in a Taylor expansion of the restoring force these coefficients are independent of A. The replacement of the original nonlinear equation by an approximate Duffing equation allows us to obtain an approximate frequency-amplitude relation as a function of the complete elliptic integral of the first kind. Some conservative nonlinear oscillators are analysed to illustrate the usefulness and effectiveness of this scheme.

  17. Cubic Matrix, Nambu Mechanics and Beyond

    OpenAIRE

    Kawamura, Y

    2002-01-01

    We propose a generalization of cubic matrix mechanics by introducing a canonical triplet and study its relation to Nambu mechanics. The generalized cubic matrix mechanics we consider can be interpreted as a “quantum” generalization of Nambu mechanics.

  18. Cubical sets and the topological topos

    DEFF Research Database (Denmark)

    Spitters, Bas

    2016-01-01

    Coquand's cubical set model for homotopy type theory provides the basis for a computational interpretation of the univalence axiom and some higher inductive types, as implemented in the cubical proof assistant. This paper contributes to the understanding of this model. We make three contributions...... show that it can also be a target for cubical realization by showing that Coquand's cubical sets classify the geometric theory of flat distributive lattices. As a side result, we obtain a simplicial realization of a cubical set. 2. Using the internal `interval' in the topos of cubical sets, we...... construct a Moore path model of identity types. 3. We construct a premodel structure internally in the cubical type theory and hence on the fibrant objects in cubical sets....

  19. Numbers for reducible cubic scrolls

    Directory of Open Access Journals (Sweden)

    Israel Vainsencher

    2004-12-01

    Full Text Available We show how to compute the number of reducible cubic scrolls of codimension 2 in (math blackboard symbol Pn incident to the appropriate number of linear spaces.Mostramos como calcular o número de rolos cúbicos redutíveis de codimensão 2 em (math blackboard symbol Pn incidentes a espaços lineares apropriados.

  20. Cubic colloids : Synthesis, functionalization and applications

    NARCIS (Netherlands)

    Castillo, S.I.R.

    2015-01-01

    This thesis is a study on cubic colloids: micron-sized cubic particles with rounded corners (cubic superballs). Owing to their shape, particle packing for cubes is more efficient than for spheres and results in fascinating phase and packing behavior. For our cubes, the particle volume fraction when

  1. Cubic colloids : Synthesis, functionalization and applications

    NARCIS (Netherlands)

    Castillo, S.I.R.

    2015-01-01

    This thesis is a study on cubic colloids: micron-sized cubic particles with rounded corners (cubic superballs). Owing to their shape, particle packing for cubes is more efficient than for spheres and results in fascinating phase and packing behavior. For our cubes, the particle volume fraction when

  2. Solving Cubic Equations by Polynomial Decomposition

    Science.gov (United States)

    Kulkarni, Raghavendra G.

    2011-01-01

    Several mathematicians struggled to solve cubic equations, and in 1515 Scipione del Ferro reportedly solved the cubic while participating in a local mathematical contest, but did not bother to publish his method. Then it was Cardano (1539) who first published the solution to the general cubic equation in his book "The Great Art, or, The Rules of…

  3. Cubic Icosahedra? A Problem in Assigning Symmetry

    Science.gov (United States)

    Lloyd, D. R.

    2010-01-01

    There is a standard convention that the icosahedral groups are classified separately from the cubic groups, but these two symmetry types have been conflated as "cubic" in some chemistry textbooks. In this note, the connection between cubic and icosahedral symmetries is examined, using a simple pictorial model. It is shown that octahedral and…

  4. Cubic metaplectic forms and theta functions

    CERN Document Server

    Proskurin, Nikolai

    1998-01-01

    The book is an introduction to the theory of cubic metaplectic forms on the 3-dimensional hyperbolic space and the author's research on cubic metaplectic forms on special linear and symplectic groups of rank 2. The topics include: Kubota and Bass-Milnor-Serre homomorphisms, cubic metaplectic Eisenstein series, cubic theta functions, Whittaker functions. A special method is developed and applied to find Fourier coefficients of the Eisenstein series and cubic theta functions. The book is intended for readers, with beginning graduate-level background, interested in further research in the theory of metaplectic forms and in possible applications.

  5. Analysis of plasma nitrided steels

    Science.gov (United States)

    Salik, J.; Ferrante, J.; Honecy, F.; Hoffman, R., Jr.

    1987-01-01

    The analysis of plasma nitrided steels can be divided to two main categories - structural and chemical. Structural analysis can provide information not only on the hardening mechanisms but also on the fundamental processes involved. Chemical analysis can be used to study the kinetics for the nitriding process and its mechanisms. In this paper preliminary results obtained by several techniques of both categories are presented and the applicability of those techniques to the analysis of plasma-nitrided steels is discussed.

  6. Fatigue modelling for gas nitriding

    Directory of Open Access Journals (Sweden)

    H. Weil

    2016-10-01

    Full Text Available The present study aims to develop an algorithm able to predict the fatigue lifetime of nitrided steels. Linear multi-axial fatigue criteria are used to take into account the gradients of mechanical properties provided by the nitriding process. Simulations on rotating bending fatigue specimens are made in order to test the nitrided surfaces. The fatigue model is applied to the cyclic loading of a gear from a simulation using the finite element software Ansys. Results show the positive contributions of nitriding on the fatigue strength

  7. Weighted cubic and biharmonic splines

    Science.gov (United States)

    Kvasov, Boris; Kim, Tae-Wan

    2017-01-01

    In this paper we discuss the design of algorithms for interpolating discrete data by using weighted cubic and biharmonic splines in such a way that the monotonicity and convexity of the data are preserved. We formulate the problem as a differential multipoint boundary value problem and consider its finite-difference approximation. Two algorithms for automatic selection of shape control parameters (weights) are presented. For weighted biharmonic splines the resulting system of linear equations can be efficiently solved by combining Gaussian elimination with successive over-relaxation method or finite-difference schemes in fractional steps. We consider basic computational aspects and illustrate main features of this original approach.

  8. The precipitation and effect of nano nitrides in HSLC steel

    Institute of Scientific and Technical Information of China (English)

    2008-01-01

    The existing forms of N and Al in HSLC (high strength low carbon) steel produced by TSCR (thin slab casting and rolling process), the precipitation thermodynamics and kinetics of AlN, and its effects on structure and mechanical property are studied. The experimental results show that only a small quantity of nitrogen is com- bined into AlN in HSLC steel produced by TSCR and most of the nitrogen in steel is still free nitrogen. Aluminum-nitride is mainly precipitated during the period of slow air cooling after coiling, but not during rolling and water cooling. The acid-soluble aluminum has no obvious effect on the grain size and mechanical property of HSLC steel produced by TSCR whose acid-soluble aluminum content is 0.005%―0.043%. The precipitation of AlN is not the main cause of grain refinement of HSLC steel produced by TSCR, nor is AlN the dominating precipitate that has precipitation strengthening effect. The nano nitrides are not pure AlN, but have complex compositions.

  9. Titanium Nitride Cermets

    Science.gov (United States)

    1952-07-01

    C ermets 7 Effect of Amount of Metal on Strength of TiN-Ni-Cr....26 Cerme ts S Effect of Amount of Metal on Strength of TiN-Co-Cr....27 Cermets 9...Figures 7 and 8. Titanium Nitride-Nickel-Chromium Cerme ts From Figure 7, it can be seen that 2900OF was the better firing temperature. The 20% metal

  10. Nitridation of Nb surface by nanosecond and femtosecond laser pulses

    Energy Technology Data Exchange (ETDEWEB)

    Farha, Ashraf Hassan [Department of Electrical and Computer Engineering and the Applied Research Center, Old Dominion University, Norfolk, VA 23529 (United States); Department of Physics, Faculty of Science, Ain Shams University, Cairo 11566 (Egypt); Ozkendir, Osman Murat [Tarsus Technology Faculty, Mersin University, Tarsus 33480 (Turkey); Koroglu, Ulas; Ufuktepe, Yüksel [Department of Physics, Cukurova University, Adana 01330 (Turkey); Elsayed-Ali, Hani E., E-mail: helsayed@odu.edu [Department of Electrical and Computer Engineering and the Applied Research Center, Old Dominion University, Norfolk, VA 23529 (United States)

    2015-01-05

    Highlights: • Laser nitridation of niobium is performed with nanosecond and femtosecond pulses. • Formation of NbN{sub x} with mixed α, β and δ phases was observed. • For femtosecond laser processed samples, laser induced ripple patterns oriented parallel to the beam polarization were formed. • X-ray absorption near edge structure show formation of Nb{sub 2}O{sub 5} on the surface of the samples. - Abstract: Niobium nitride samples were prepared by laser nitridation in a reactive nitrogen gas environment at room temperature using a Q-switched Nd:YAG nanosecond laser and a Ti:sapphire femtosecond laser. The effects of laser fluence on the formed phase, surface morphology, and electronic properties of the NbN{sub x} were investigated. The samples were prepared at different nanosecond laser fluences up to 5.0 ± 0.8 J/cm{sup 2} at fixed nitrogen pressure of ∼2.7 × 10{sup 4} Pa formed NbN{sub x} with mainly the cubic δ-NbN phase. Femtosecond laser nitrided samples were prepared using laser fluences up to 1.3 ± 0.3 mJ/cm{sup 2} at ∼4.0 × 10{sup 4} Pa nitrogen pressure. Laser induced ripple patterns oriented parallel to the beam polarization were formed with spacing that increases with the laser fluence. To achieve a laser-nitrided surface with desired crystal orientation the laser fulence is an important parameter that needs to be properly adjusted.

  11. Aluminizing and subsequent nitriding of plain carbon low alloy steels for piston ring applications

    Energy Technology Data Exchange (ETDEWEB)

    Bindumadhavan, P.N.; Keng Wah, H.; Prabhakar, O. [Nanyang Technol. Univ., Singapore (Singapore). Div. of Mater. Eng.; Makesh, S. [Chemical and Nuclear Engineering Building, University of Maryland, 20783, College Park, MD (United States); Gowrishankar, N. [I P Rings Ltd., D 11/12, Industrial Estate, 603209, Maraimalainagar (India)

    2000-05-22

    Nitriding is a case hardening process that is commonly used for increasing the wear life of automotive piston rings. However, special alloy steels are required to achieve high surface hardness and nitrided case depth values required by the automotive industry. The cost of such alloy steels is one of the major components of the total cost of the nitrided piston ring. To address this issue, efforts have been directed towards development of cheaper raw materials as substitutes for nitridable steels. In this study, an attempt has been made to increase the surface hardness of two plain carbon low alloy steels by aluminizing and subsequent diffusion treatment and nitriding. The process parameters for the aluminizing operation are discussed. Results indicate that a near twofold increase in surface hardness is achievable by aluminizing followed by diffusion treatment and nitriding (580-1208 HV for EN32B steel and 650-1454 HV for 15CR3 steel). It has also been found that the nitrided case depth obtained (0.11-0.13 mm for EN32B steel and 0.10-0.14 mm for 15CR3 steel) matches well with the general requirements of the piston ring industry. The diffusion of aluminum into the alloy layer has also been discussed and the theoretical predictions were compared with actual values of Al concentration, as obtained by SEM-EDS system. It is found that Fick's law gives a fairly good prediction of the actual Al concentration profile, in spite of the complexity of the diffusion path. X-Ray diffraction studies have confirmed the presence of AlN in the alloy layer, which could be instrumental in the significant increase in surface hardness. It is proposed that aluminizing followed by diffusion treatment and nitriding of plain carbon low alloy steels could provide an alternative to the use of expensive nitridable steels for piston ring applications. (orig.)

  12. Gallium nitride electronics

    Science.gov (United States)

    Rajan, Siddharth; Jena, Debdeep

    2013-07-01

    In the past two decades, there has been increasing research and industrial activity in the area of gallium nitride (GaN) electronics, stimulated first by the successful demonstration of GaN LEDs. While the promise of wide band gap semiconductors for power electronics was recognized many years before this by one of the contributors to this issue (J Baliga), the success in the area of LEDs acted as a catalyst. It set the field of GaN electronics in motion, and today the technology is improving the performance of several applications including RF cell phone base stations and military radar. GaN could also play a very important role in reducing worldwide energy consumption by enabling high efficiency compact power converters operating at high voltages and lower frequencies. While GaN electronics is a rapidly evolving area with active research worldwide, this special issue provides an opportunity to capture some of the great advances that have been made in the last 15 years. The issue begins with a section on epitaxy and processing, followed by an overview of high-frequency HEMTs, which have been the most commercially successful application of III-nitride electronics to date. This is followed by review and research articles on power-switching transistors, which are currently of great interest to the III-nitride community. A section of this issue is devoted to the reliability of III-nitride devices, an area that is of increasing significance as the research focus has moved from not just high performance but also production-worthiness and long-term usage of these devices. Finally, a group of papers on new and relatively less studied ideas for III-nitride electronics, such as interband tunneling, heterojunction bipolar transistors, and high-temperature electronics is included. These areas point to new areas of research and technological innovation going beyond the state of the art into the future. We hope that the breadth and quality of articles in this issue will make it

  13. Platinum nitride with fluorite structure

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Rong; Zhang, Xiao-Feng

    2005-01-31

    The mechanical stability of platinum nitride has been studied using first-principles calculations. By calculating the single-crystal elastic constants, we show that platinum nitride can be stabilized in the fluorite structure, in which the nitrogen atoms occupy all the tetrahedral interstitial sites of the metal lattice. The stability is attributed to the pseudogap effect from analysis of the electronic structure.

  14. Optical characterization of gallium nitride

    NARCIS (Netherlands)

    Kirilyuk, Victoria

    2002-01-01

    Group III-nitrides have been considered a promising system for semiconductor devices since a few decades, first for blue- and UV-light emitting diodes, later also for high-frequency/high-power applications. Due to the lack of native substrates, heteroepitaxially grown III-nitride layers are usually

  15. Electrochemical nitridation of metal surfaces

    Science.gov (United States)

    Wang, Heli; Turner, John A.

    2015-06-30

    Electrochemical nitridation of metals and the produced metals are disclosed. An exemplary method of electrochemical nitridation of metals comprises providing an electrochemical solution at low temperature. The method also comprises providing a three-electrode potentiostat system. The method also comprises stabilizing the three-electrode potentiostat system at open circuit potential. The method also comprises applying a cathodic potential to a metal.

  16. Infrared SPR sensing with III-nitride dielectric layers

    OpenAIRE

    Núñez-Cascarejo, A.; Estéban, O.; Méndez, J.A,; M. González-Herráez; Naranjo, F. B.

    2016-01-01

    In this work, Aluminum Indium Nitride (AlxIn1-xN) has been used as the dielectric overlay for a surface plasmon resonance sensor. The use of a ternary compound such as AlxIn1-xN for the dielectric allows a fine tuning of its refractive index by varying its composition, thus improving the sensor performance. Narrower transmittance resonances and higher sensitivities are obtained for transducers where the substrate rotates while depositing the ternary compound, which is attributed to the deposi...

  17. GREEN'S FUNCTION AND EFFECTIVE ELASTIC STIFFNESS TENSOR FOR ARBITRARY AGGREGATES OF CUBIC CRYSTALS

    Institute of Scientific and Technical Information of China (English)

    HuangMojia; ZhengChaomei

    2004-01-01

    A closed but approximate formula of Green's function for an arbitrary aggregate of cubic crystallites is given to derive the effective elastic stiffness tensor of the polycrystal. This formula, which includes three elastic constants of single cubic crystal and five texture coefficients,accounts for the effects of the orientation distribution function (ODF) up to terms linear in the texture coefficients. Thus it is expected that our formula would be applicable to arbitrary aggregates with weak texture or to materials such as aluminum whose single crystal has weak anisotropy.Three examples are presented to compare predictions from our formula with those from Nishioka and Lothe's formula and Synge's contour integral through numerical integration. As an application of Green's function, we briefly describe the procedure of deriving the effective elastic stiffness tensor for an orthorhombic aggregate of cubic crystallites. The comparison of the computational results given by the finite element method and our effective elastic stiffness tensor is made by an example.

  18. Tame Kernels of Pure Cubic Fields

    Institute of Scientific and Technical Information of China (English)

    Xiao Yun CHENG

    2012-01-01

    In this paper,we study the p-rank of the tame kernels of pure cubic fields.In particular,we prove that for a fixed positive integer m,there exist infinitely many pure cubic fields whose 3-rank of the tame kernel equal to m.As an application,we determine the 3-rank of their tame kernels for some special pure cubic fields.

  19. Two-dimensional cubic convolution.

    Science.gov (United States)

    Reichenbach, Stephen E; Geng, Frank

    2003-01-01

    The paper develops two-dimensional (2D), nonseparable, piecewise cubic convolution (PCC) for image interpolation. Traditionally, PCC has been implemented based on a one-dimensional (1D) derivation with a separable generalization to two dimensions. However, typical scenes and imaging systems are not separable, so the traditional approach is suboptimal. We develop a closed-form derivation for a two-parameter, 2D PCC kernel with support [-2,2] x [-2,2] that is constrained for continuity, smoothness, symmetry, and flat-field response. Our analyses, using several image models, including Markov random fields, demonstrate that the 2D PCC yields small improvements in interpolation fidelity over the traditional, separable approach. The constraints on the derivation can be relaxed to provide greater flexibility and performance.

  20. An aluminum nitride photoconductor for X-ray detection

    Institute of Scientific and Technical Information of China (English)

    Wang Xinjian; Song Hang; Li Zhiming; Jiang Hong; Li Dabing; Miao Guoqing; Chen Yiren; Sun Xiaojuan

    2012-01-01

    An AlN photoconductor for X-ray detection has been fabricated,and its response to X-ray irradiation intensity is studied.The photoconductor has a very low leakage current,less than 0.1 nA at an applied voltage of 100 V in the absence of X-ray irradiation.The photocurrent measurement results clearly reveal that the photocurrent is proportional to the square root of the X-ray irradiation intensity,and under relatively high irradiation the photocurrent can reach values one order of magnitude larger than the dark current when a voltage of 100 V is applied across the AlN photoconductor.By using the ABC model the dependence of the photocurrent on the X-ray irradiation intensity is analyzed,and a reasonable interpretation of the physical mechanism is obtained.

  1. Temperature-compensated aluminum nitride lamb wave resonators.

    Science.gov (United States)

    Lin, Chih-Ming; Yen, Ting-Ta; Lai, Yun-Ju; Felmetsger, Valery V; Hopcroft, Matthew A; Kuypers, Jan H; Pisano, Albert P

    2010-03-01

    In this paper, the temperature compensation of AlN Lamb wave resonators using edge-type reflectors is theoretically studied and experimentally demonstrated. By adding a compensating layer of SiO2 with an appropriate thickness, a Lamb wave resonator based on a stack of AlN and SiO2 layers can achieve a zero first-order temperature coefficient of frequency (TCF). Using a composite membrane consisting of 1 microm AlN and 0.83 microm SiO2, a Lamb wave resonator operating at 711 MHz exhibits a first-order TCF of -0.31 ppm/degrees C and a second-order TCF of -22.3 ppb/degrees C(2) at room temperature. The temperature-dependent fractional frequency variation is less than 250 ppm over a wide temperature range from -55 degrees C to 125 degrees C. This temperature-compensated AlN Lamb wave resonator is promising for future applications including thermally stable oscillators, filters, and sensors.

  2. Role of nitrogen vacancies in cerium doped aluminum nitride

    Energy Technology Data Exchange (ETDEWEB)

    Majid, Abdul, E-mail: abdulmajid40@yahoo.com [Department of Physics, University of Gujrat, Gujrat (Pakistan); Department of Adaptive Machine Systems, Osaka University, Osaka (Japan); Asghar, Farzana [Department of Physics, University of Gujrat, Gujrat (Pakistan); Rana, Usman Ali; Ud-Din Khan, Salah [Sustainable Energy Technologies Center, College of Engineering, King Saud University, PO-Box 800, Riyadh 11421 (Saudi Arabia); Yoshiya, Masato [Department of Adaptive Machine Systems, Osaka University, Osaka (Japan); Hussain, Fayyaz [Physics Department, Bahauddin Zakarya University, Multan (Pakistan); Ahmad, Iftikhar [Department of Mathematics, University of Gujrat, Gujrat (Pakistan)

    2016-08-15

    In this report, a systematic density functional theory based investigation to explain the character of nitrogen vacancies in structural, electronic and magnetic properties of Ce doped wurtzite AlN is presented. The work demonstrates the modification in the properties of the material upon doping thereby addressing dopant concentration and inter-dopant distance. The presence of anionic vacancy reveals spin polarization and introduction of magnetic character in the structure. The doping produced the magnetic character in the material which was of ferromagnetic nature in most cases except the situation when dopants separated by largest distance of 5.873 Å. The calculated values of total energy and exchange energy suggested the configuration including Ce{sub Al}–V{sub N} complex is more favorable and exhibits ferromagnetic ordering. - Highlights: • Ce doped AlN with and without nitrogen vacancy. • Dopant at nearest neighbor site introduce ferromagnetism. • Ce{sub Al}–V{sub N} complex is favorable in Ce:AlN.

  3. Mechanisms of Dynamic Deformation and Dynamic Failure in Aluminum Nitride

    Science.gov (United States)

    2012-06-01

    D DEBUSSCHER MZ436 20 29 J ERIDON MZ436 21 24 W HERMAN MZ435 01 24 S PENTESCU MZ436 21 24 38500 MOUND RD STERLING HTS MI 48310...3200 1 JET PROPULSION LAB IMPACT PHYSICS GROUP M ADAMS 4800 OAK GROVE DR PASADENA CA 91109-8099 3 OGARA HESS & EISENHARDT

  4. TEM studies of plasma nitrided austenitic stainless steel.

    Science.gov (United States)

    Stróz, D; Psoda, M

    2010-03-01

    Cross-sectional transmission electron microscopy and X-ray phase analysis were used to study the structure of a layer formed during nitriding the AISI 316L stainless steel at temperature 440 degrees C. It was found that the applied treatment led to the formation of 6-microm-thick layer of the S-phase. There is no evidence of CrN precipitation. The X-ray diffraction experiments proved that the occurred austenite lattice expansion - due to nitrogen atoms - depended on the crystallographic direction. The cross-sectional transmission electron microscopy studies showed that the layer consisted of a single cubic phase that contained a lot of defects such as dislocations, stacking faults, slip bands and twins. The high-resolution electron microscopy observations were applied to study the defect formation due to the nitriding process. It was shown that the presence of great number of stacking faults leads to formation of nanotwins. Weak, forbidden {100} reflections were still another characteristic feature of the S-phase. These were not detected in the X-ray spectra of the phase. Basing on the high-resolution electron microscopy studies it can be suggested that the short-range ordering of the nitrogen atoms in the octahedral sites inside the f.c.c. matrix lattice takes place and gives rise to appearance of these spots. It is suggested that the cubic lattice undergoes not only expansion but also slight rombohedral distortion that explains differences in the lattice expansion for different crystallographic directions.

  5. Cubic AlGaN/GaN structures for device application

    Energy Technology Data Exchange (ETDEWEB)

    Schoermann, Joerg

    2007-05-15

    The aim of this work was the growth and the characterization of cubic GaN, cubic AlGaN/GaN heterostructures and cubic AlN/GaN superlattice structures. Reduction of the surface and interface roughness was the key issue to show the potential for the use of cubic nitrides in futur devices. All structures were grown by plasma assisted molecular beam epitaxy on free standing 3C-SiC (001) substrates. In situ reflection high energy electron diffraction was first investigated to determine the Ga coverage of c-GaN during growth. Using the intensity of the electron beam as a probe, optimum growth conditions were found when a 1 monolayer coverage is formed at the surface. GaN samples grown under these conditions reveal excellent structural properties. On top of the c-GaN buffer c-AlGaN/GaN single and multiple quantum wells were deposited. The well widths ranged from 2.5 to 7.5 nm. During growth of Al{sub 0.15}Ga{sub 0.85}N/GaN quantum wells clear reflection high energy electron diffraction oscillations were observed indicating a two dimensional growth mode. We observed strong room-temperature, ultraviolet photoluminescence at about 3.3 eV with a minimum linewidth of 90 meV. The peak energy of the emission versus well width is reproduced by a square-well Poisson- Schroedinger model calculation. We found that piezoelectric effects are absent in c-III nitrides with a (001) growth direction. Intersubband transition in the wavelength range from 1.6 {mu}m to 2.1 {mu}m was systematically investigated in AlN/GaN superlattices (SL), grown on 100 nm thick c-GaN buffer layers. The SLs consisted of 20 periods of GaN wells with a thickness between 1.5 nm and 2.1 nm and AlN barriers with a thickness of 1.35 nm. The first intersubband transitions were observed in metastable cubic III nitride structures in the range between 1.6 {mu}m and 2.1 {mu}m. (orig.)

  6. Functionalized boron nitride nanotubes

    Science.gov (United States)

    Sainsbury, Toby; Ikuno, Takashi; Zettl, Alexander K

    2014-04-22

    A plasma treatment has been used to modify the surface of BNNTs. In one example, the surface of the BNNT has been modified using ammonia plasma to include amine functional groups. Amine functionalization allows BNNTs to be soluble in chloroform, which had not been possible previously. Further functionalization of amine-functionalized BNNTs with thiol-terminated organic molecules has also been demonstrated. Gold nanoparticles have been self-assembled at the surface of both amine- and thiol-functionalized boron nitride Nanotubes (BNNTs) in solution. This approach constitutes a basis for the preparation of highly functionalized BNNTs and for their utilization as nanoscale templates for assembly and integration with other nanoscale materials.

  7. Evaluation of Vitreous and Devitrifying Enamels as Hot Forming Lubricants for Aluminum AA5083 Alloy

    Science.gov (United States)

    Riahi, A. R.; Morales, A. T.; Alpas, A. T.

    2008-06-01

    The adhesion of aluminum to tool surfaces during the hot forming of sheet aluminum alloys presents challenging tribological problems. Graphite and boron nitride are commonly used as aluminum adhesion mitigating solid lubricants for hot forming processes, but lubricant breakdown in high-stress areas, such as corners and bends, remains an issue compromising the quality of the formed parts as well as the tool life. Low-melting temperature enamels may provide an affordable and easy to apply alternative. In this study, vitreous (amorphous glass) and devitrifying (two phase crystalline glass) layers were deposited on the surface of sheet aluminum samples with a sedimentation technique. Enamel lubrication was effective in preventing aluminum transfer to the steel counterface. Hence, the prospect exists for the use of these enamels as aluminum workpiece lubricants in hot forming operations.

  8. Effects of Aqueous Vapour Consistence in Nitriding Furnace on the Quality of the Sintered Nitride

    Institute of Scientific and Technical Information of China (English)

    WANGZijiang

    1998-01-01

    If the aqueous vapour consistence is too high(>0.7%),it is very disadvantageous to the sintered products in the nitriding furnace,when silcon nitride bonded silicon carbide products are synthesized by nitridation of silicon.

  9. Methods for improved growth of group III nitride semiconductor compounds

    Energy Technology Data Exchange (ETDEWEB)

    Melnik, Yuriy; Chen, Lu; Kojiri, Hidehiro

    2015-03-17

    Methods are disclosed for growing group III-nitride semiconductor compounds with advanced buffer layer technique. In an embodiment, a method includes providing a suitable substrate in a processing chamber of a hydride vapor phase epitaxy processing system. The method includes forming an AlN buffer layer by flowing an ammonia gas into a growth zone of the processing chamber, flowing an aluminum halide containing precursor to the growth zone and at the same time flowing additional hydrogen halide or halogen gas into the growth zone of the processing chamber. The additional hydrogen halide or halogen gas that is flowed into the growth zone during buffer layer deposition suppresses homogeneous AlN particle formation. The hydrogen halide or halogen gas may continue flowing for a time period while the flow of the aluminum halide containing precursor is turned off.

  10. X-ray diffraction of III-nitrides

    Energy Technology Data Exchange (ETDEWEB)

    Moram, M A; Vickers, M E [Department of Materials Science and Metallurgy, University of Cambridge, Pembroke St., Cambridge, CB2 3QZ (United Kingdom)], E-mail: mam65@cam.ac.uk

    2009-03-15

    The III-nitrides include the semiconductors AlN, GaN and InN, which have band gaps spanning the entire UV and visible ranges. Thin films of III-nitrides are used to make UV, violet, blue and green light-emitting diodes and lasers, as well as solar cells, high-electron mobility transistors (HEMTs) and other devices. However, the film growth process gives rise to unusually high strain and high defect densities, which can affect the device performance. X-ray diffraction is a popular, non-destructive technique used to characterize films and device structures, allowing improvements in device efficiencies to be made. It provides information on crystalline lattice parameters (from which strain and composition are determined), misorientation (from which defect types and densities may be deduced), crystallite size and microstrain, wafer bowing, residual stress, alloy ordering, phase separation (if present) along with film thicknesses and superlattice (quantum well) thicknesses, compositions and non-uniformities. These topics are reviewed, along with the basic principles of x-ray diffraction of thin films and areas of special current interest, such as analysis of non-polar, semipolar and cubic III-nitrides. A summary of useful values needed in calculations, including elastic constants and lattice parameters, is also given. Such topics are also likely to be relevant to other highly lattice-mismatched wurtzite-structure materials such as heteroepitaxial ZnO and ZnSe.

  11. X-ray diffraction of III-nitrides

    Science.gov (United States)

    Moram, M A; Vickers, M E

    2009-03-01

    The III-nitrides include the semiconductors AlN, GaN and InN, which have band gaps spanning the entire UV and visible ranges. Thin films of III-nitrides are used to make UV, violet, blue and green light-emitting diodes and lasers, as well as solar cells, high-electron mobility transistors (HEMTs) and other devices. However, the film growth process gives rise to unusually high strain and high defect densities, which can affect the device performance. X-ray diffraction is a popular, non-destructive technique used to characterize films and device structures, allowing improvements in device efficiencies to be made. It provides information on crystalline lattice parameters (from which strain and composition are determined), misorientation (from which defect types and densities may be deduced), crystallite size and microstrain, wafer bowing, residual stress, alloy ordering, phase separation (if present) along with film thicknesses and superlattice (quantum well) thicknesses, compositions and non-uniformities. These topics are reviewed, along with the basic principles of x-ray diffraction of thin films and areas of special current interest, such as analysis of non-polar, semipolar and cubic III-nitrides. A summary of useful values needed in calculations, including elastic constants and lattice parameters, is also given. Such topics are also likely to be relevant to other highly lattice-mismatched wurtzite-structure materials such as heteroepitaxial ZnO and ZnSe.

  12. Mechanical properties, anisotropy and hardness of group IVA ternary spinel nitrides

    Science.gov (United States)

    Ding, Ying-Chun; Chen, Min

    2013-10-01

    In this work, new ternary cubic spinel structures are designed by the substitutional method. The structures, elasticity properties, intrinsic hardness and Debye temperature of the cubic ternary spinel nitrides are studied by first principles based on the density-functional theory. The results show that γ-CSn2N4, γ-SiC2N4, γ-GeC2N4 and γ-SnC2N4 are not mechanically stable. The elastic constants Cij of these cubic spinel structures are obtained using the stress-strain method. Derived elastic constants, such as bulk modulus, shear modulus, Young's modulus, Poisson coefficient and brittle/ductile behaviour are estimated using Voigt-Reuss-Hill theories. The B/G value, the Poisson's ratio and anisotropic factor are calculated for eight ternary stable crystals. Based on the microscopic hardness model, we further estimate the Vickers hardness of all the stable crystals. From the calculated hardness of the stable group IVA ternary spinel nitrides by Gao's and Jiang's methods, it is observed that the stable group IVA ternary spinel nitrides are not superhard materials except for γ-CSi2N4. Furthermore, the Debye temperature for the eight stable crystals is also estimated.

  13. Polarized infrared reflectance study of free standing cubic GaN grown by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Lee, S.C., E-mail: saicheonglee86@yahoo.com [Nano-Optoelectronics Research Laboratory, School of Physics, Universiti Sains Malaysia, 11800 Penang (Malaysia); Department of Physics, Faculty of Science, University of Malaya, 50603 Kuala Lumpur (Malaysia); Ng, S.S.; Hassan, H. Abu; Hassan, Z.; Zainal, N. [Nano-Optoelectronics Research Laboratory, School of Physics, Universiti Sains Malaysia, 11800 Penang (Malaysia); Novikov, S.V.; Foxon, C.T.; Kent, A.J. [School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD (United Kingdom)

    2014-07-01

    Optical properties of free standing cubic gallium nitride grown by molecular beam epitaxy system are investigated by a polarized infrared (IR) reflectance technique. A strong reststrahlen band, which reveals the bulk-like optical phonon frequencies, is observed. Meanwhile, continuous oscillation fringes, which indicate the sample consists of two homogeneous layers with different dielectric constants, are observed in the non-reststrahlen region. By obtaining the first derivative of polarized IR reflectance spectra measured at higher angles of incidence, extra phonon resonances are identified at the edges of the reststrahlen band. The observations are verified with the theoretical results simulated based on a multi-oscillator model. - Highlights: • First time experimental studies of IR optical phonons in bulk like, cubic GaN layer. • Detection of extra phonon modes of cubic GaN by polarized IR reflectance technique. • Revelation of IR multiphonon modes of cubic GaN by first derivative numerical method. • Observation of multiphonon modes requires very high angle of incidence. • Resonance splitting effect induced by third phonon mode is a qualitative indicator.

  14. Magnetovolume effects in manganese nitrides with antiperovskite structure

    Directory of Open Access Journals (Sweden)

    Koshi Takenaka

    2014-01-01

    Full Text Available Magnetostructural correlations in antiperovskite manganese nitrides were investigated systematically for stoichiometric and solid solution Mn3Cu1−xAxN (A = Co, Ni, Zn, Ga, Ge, Rh, Pd, Ag, In, Sn or Sb. This class of nitrides is attracting great attention because of their giant negative thermal expansion, which is achieved by doping Ge or Sn into the A site as a relaxant of the sharp volume contraction on heating (spontaneous volume magnetostriction ωs because of the magnetovolume effects. The physical background of large ωs and mechanism of how the volume contraction becomes gradual with temperature are central concerns for the physics and applications of these nitrides. An entire dataset of thermal expansion, crystal structure and magnetization demonstrates that the cubic triangular antiferromagnetic state is crucial for large ωs. The intimate relationship between ωs and the magnetic structure is discussed in terms of geometrical frustration related to the Mn6N octahedron and magnetic stress concept. The results presented herein also show that ωs depends on the number of d electrons in the A atom, suggesting the important role of the d orbitals of the A atom. Not all the dopants in the A site, but the elements that disturb the cubic triangular antiferromagnetic state, are effective in broadening the volume change. This fact suggests that instability neighboring the phase boundary is related to the broadening. The relation between the gradual volume change and the local structure anomaly is suggested by recent microprobe studies.

  15. Cubical local partial orders on cubically subdivided spaces - Existence and construction

    DEFF Research Database (Denmark)

    Fajstrup, Lisbeth

    2006-01-01

    The geometric models of higher dimensional automata (HDA) and Dijkstra's PV-model are cubically subdivided topological spaces with a local partial order. If a cubicalization of a topological space is free of immersed cubic Möbius bands, then there are consistent choices of direction in all cubes...

  16. Cubical local partial orders on cubically subdivided spaces - existence and construction

    DEFF Research Database (Denmark)

    Fajstrup, Lisbeth

    The geometric models of Higher Dimensional Automata and Dijkstra's PV-model are cubically subdivided topological spaces with a local partial order. If a cubicalization of a topological space is free of immersed cubic Möbius bands, then there are consistent choices of direction in all cubes...

  17. Nanostructuring of Aluminum Alloy Powders by Cryogenic Attrition with Hydrogen-Free Process Control Agent

    Science.gov (United States)

    2015-02-01

    times for cleanliness . The tank was then refilled, allowing the temperature to stabilize at the operating temperature (–196 °C), after which the...Ortalan V, Li WF, Zhang Z, Vogt R, Browning ND, Lavernia EJ, Schoenung JM. HRTEM and EELS study of aluminum nitride in nanostructured Al 5083/B4C

  18. Characterization of salt cake from secondary aluminum production.

    Science.gov (United States)

    Huang, Xiao-Lan; Badawy, Amro El; Arambewela, Mahendranath; Ford, Robert; Barlaz, Morton; Tolaymat, Thabet

    2014-05-30

    Salt cake is a major waste component generated from the recycling of secondary aluminum processing (SAP) waste. Worldwide, the aluminum industry produces nearly 5 million tons of waste annually and the end-of-life management of these wastes is becoming a challenge in the U.S. and elsewhere. In this study, the mineral phases, metal content and metal leachability of 39 SAP waste salt cake samples collected from 10 different facilities across the U.S. were determined. The results showed that aluminum (Al), aluminum oxide, aluminum nitride and its oxides, spinel and elpasolite are the dominant aluminum mineral phases in salt cake. The average total Al content was 14% (w/w). The overall percentage of the total leachable Al in salt cake was 0.6% with approximately 80% of the samples leaching at a level less than 1% of the total aluminum content. The extracted trace metal concentrations in deionized water were relatively low (μgL(-1) level). The toxicity characteristic leaching procedure (TCLP) was employed to further evaluate leachability and the results indicated that the leached concentrations of toxic metals from salt cake were much lower than the EPA toxicity limit set by USEPA.

  19. CLASSIFICATION OF CUBIC PARAMETERIZED HOMOGENEOUS VECTOR FIELDS

    Institute of Scientific and Technical Information of China (English)

    Karnal H.Yasir; TANG Yun

    2002-01-01

    In this paper the cubic homogeneous parameterized vector fields are studied.The classification of the phase portrait near the critical point is presented. This classification is an extension of the result given by Takens to the cubic homogeneous parameterized vector fields with six parameters.

  20. CLASSIFICATION OF CUBIC PARAMETERIZED HOMOGENEOUS VECTOR FIELDS

    Institute of Scientific and Technical Information of China (English)

    KamalH.Yasir; TNAGYun

    2002-01-01

    In this paper the cubic homogeneous parameterized vector fields are studied.The classification of the phase portrait near the critical point is presented.This classification is an extension of the result given by takens to the cubic homogeneous parameterized vector fields with six parameters.

  1. Magnetic properties of the ammonolysis product of α-Fe powder containing a small amount of aluminum

    Energy Technology Data Exchange (ETDEWEB)

    Tsugawa, Yuta; Maubuchi, Yuji; Motohashi, Teruki; Kikkawa, Shinichi, E-mail: kikkawa@eng.hokudai.ac.jp

    2015-02-15

    Magnetite was prepared containing a small amount of aluminum and its nitride was generated through low temperature ammonolysis following reduction under hydrogen. The nitrided product was determined by XRD to be a mixture of “α″-Fe{sub 16}N{sub 2}” having a slightly deformed crystal structure from α″-Fe{sub 16}N{sub 2} and the residual α-Fe. Magnetic coercivity of the mixture was decreased from the value of 150 mT obtained for the nitride product made without aluminum, due to the precipitation of nonmagnetic amorphous alumina in the low temperature nitrided bcc (Fe{sub 1−x}Al{sub x}) with x≤0.03. The aluminum-doped nitride product in which the “α″-Fe{sub 16}N{sub 2}” fraction was 30 at% exhibited magnetization at 1.5 T of approximately 200 Am{sup 2}kg{sup −1} at room temperature and its magnetic coercivity was 20 mT. - Graphical abstract: Magnetic iron nitride particles were separated by nonmagnetic amorphous γ-alumina. Magnetic coercivity was decreased by reducing the magnetic interaction between the particles. - Highlights: • Magnetic coercivity decreased in α”-Fe{sub 16}N{sub 2} like compound as a soft magnet. • Small amount of Al addition was effective in its preparation. • Magnetic interaction decreased between the “α”-Fe{sub 16}N{sub 2}” particles.

  2. A first principle study of band structure of III-nitride compounds

    Energy Technology Data Exchange (ETDEWEB)

    Ahmed, Rashid [Centre for High Energy Physics University of the Punjab, Lahore-54590 (Pakistan)]. E-mail: rasofi@hotmail.com; Akbarzadeh, H. [Department of Physics, Isfahan University of Technology, 841546 Isfahan (Iran, Islamic Republic of); Fazal-e-Aleem [Centre for High Energy Physics University of the Punjab, Lahore-54590 (Pakistan)

    2005-12-15

    The band structure of both phases, zinc-blende and wurtzite, of aluminum nitride, indium nitride and gallium nitride has been studied using computational methods. The study has been done using first principle full-potential linearized augmented plane wave (FP-LAPW) method, within the framework of density functional theory (DFT). For the exchange correlation potential, generalized gradient approximation (GGA) and an alternative form of GGA proposed by Engel and Vosko (GGA-EV) have been used. Results obtained for band structure of these compounds have been compared with experimental results as well as other first principle computations. Our results show a significant improvement over other theoretical work and are closer to the experimental data.

  3. Study of the Active Screen Plasma Nitriding

    Institute of Scientific and Technical Information of China (English)

    Zhao Cheng; C. X. Li; H. Dong; T. Bell

    2004-01-01

    Active screen plasma nitriding (ASPN) is a novel nitriding process, which overcomes many of the practical problems associated with the conventional DC plasma nitriding (DCPN). Experimental results showed that the metallurgical characteristics and hardening effect of 722M24 steel nitrided by ASPN at both floating potential and anodic (zero) potential were similar to those nitrided by DCPN. XRD and high-resolution SEM analysis indicated that iron nitride particles with sizes in sub-micron scale were deposited on the specimen surface in AS plasma nitriding. These indicate that the neutral iron nitride particles, which are sputtered from the active screen and transferred through plasma to specimen surface, are considered to be the dominant nitrogen carder in ASPN. The OES results show that NH could not be a critical species in plasma nitriding.

  4. Characterization and reliability of aluminum gallium nitride/gallium nitride high electron mobility transistors

    Science.gov (United States)

    Douglas, Erica Ann

    Compound semiconductor devices, particularly those based on GaN, have found significant use in military and civilian systems for both microwave and optoelectronic applications. Future uses in ultra-high power radar systems will require the use of GaN transistors operated at very high voltages, currents and temperatures. GaN-based high electron mobility transistors (HEMTs) have proven power handling capability that overshadows all other wide band gap semiconductor devices for high frequency and high-power applications. Little conclusive research has been reported in order to determine the dominating degradation mechanisms of the devices that result in failure under standard operating conditions in the field. Therefore, it is imperative that further reliability testing be carried out to determine the failure mechanisms present in GaN HEMTs in order to improve device performance, and thus further the ability for future technologies to be developed. In order to obtain a better understanding of the true reliability of AlGaN/GaN HEMTs and determine the MTTF under standard operating conditions, it is crucial to investigate the interaction effects between thermal and electrical degradation. This research spans device characterization, device reliability, and device simulation in order to obtain an all-encompassing picture of the device physics. Initially, finite element thermal simulations were performed to investigate the effect of device design on self-heating under high power operation. This was then followed by a study of reliability of HEMTs and other tests structures during high power dc operation. Test structures without Schottky contacts showed high stability as compared to HEMTs, indicating that degradation of the gate is the reason for permanent device degradation. High reverse bias of the gate has been shown to induce the inverse piezoelectric effect, resulting in a sharp increase in gate leakage current due to crack formation. The introduction of elevated temperatures during high reverse gate bias indicated that device failure is due to the breakdown of an unintentional gate oxide. RF stress of AlGaN/GaN HEMTs showed comparable critical voltage breakdown regime as that of similar devices stressed under dc conditions. Though RF device characteristics showed stability up to a drain bias of 20 V, Schottky diode characteristics degraded substantially at all voltages investigated. Results from both dc and RF stress conditions, under several bias regimes, confirm that the primary root for stress induced degradation was due to the Schottky contact. (Full text of this dissertation may be available via the University of Florida Libraries web site. Please check http://www.uflib.ufl.edu/etd.html)

  5. Two-Dimensional Modeling of Aluminum Gallium Nitride/Gallium Nitride High Electron Mobility Transistor

    Science.gov (United States)

    2002-06-01

    Binari, Dr. Mario Ancona, Dr. Weber, Dr. Specht, and Dr. Feick for beginning this valuable work. My parents, Ossie and Jewell Henry , for their love...33, No.14, pp. 1230-1231. 20. Petrosky , K.J., “High-Power High-Frequency SiC and GaN Devices for Microwave Amplifier Applications,” 12 March 2002

  6. The precipitation and effect of nano nitrides in HSLC steel

    Institute of Scientific and Technical Information of China (English)

    FU Jiei; LIU YangChun; WU HuaJie

    2008-01-01

    The existing forms of N and AI in HSLC (high strength low carbon) steel produced by TSCR (thin slab casting and rolling process),the precipitation thermodynamics and kinetics of AIN,and its effects on structure and mechanical property are stud-ied.The experimental results show that only a small quantity of nitrogen is com-bined into AIN in HSLC steel produced by TSCR and most of the nitrogen in steel is still free nitrogen.AIuminum-nitride is mainly precipitated during the period of slow air cooling after coiling,but not during rolling and water cooling.The acid-soluble aluminum has no obvious effect on the grain size and mechanical property of HSLC steel produced by TSCR whose acid-soluble aluminum content is 0.005%-0.043%.The precipitation of AIN is not the main cause of grain refinement of HSLC steel produced by TSCR,nor is AIN the dominating precipitate that has precipitation strengthening effect.The nano nitrides are not pure AIN,but have complex compositions.

  7. Effect of Variation of Silicon Nitride Passivation Layer on Electron Irradiated Aluminum Gallium Nitride/Gallium Nitride HEMT Structures

    Science.gov (United States)

    2014-06-19

    dioxide for passivation. As early as the 1980s, use of a Si3N4 layer on silicon operational amplifiers to achieve 4 radiation resistant...resistance of a precision operational amplifier .” IEEE Transactions on Nuclear Science, 28, no. 6 (1981): 4325-27. Fagerlind, M., Allerstain, F...172 6.3. Transconductance and Diode Measurements .......................................... 181 6.4. Deep Level Transient

  8. Boron nitride converted carbon fiber

    Science.gov (United States)

    Rousseas, Michael; Mickelson, William; Zettl, Alexander K.

    2016-04-05

    This disclosure provides systems, methods, and apparatus related to boron nitride converted carbon fiber. In one aspect, a method may include the operations of providing boron oxide and carbon fiber, heating the boron oxide to melt the boron oxide and heating the carbon fiber, mixing a nitrogen-containing gas with boron oxide vapor from molten boron oxide, and converting at least a portion of the carbon fiber to boron nitride.

  9. Hardness analysis of cubic metal mononitrides from first principles

    Science.gov (United States)

    Fulcher, B. D.; Cui, X. Y.; Delley, B.; Stampfl, C.

    2012-05-01

    Density functional theory calculations are performed to evaluate the hardness of various cubic metal nitrides: rocksalt TiN, VN, ZrN, NbN, AlN, and SiN; zincblende AlN and BN; and diamond C for comparison. The isotropic elastic stiffness constants cij, bulk modulus K, shear modulus G, Young's modulus E, and isotropic Poisson's ratio ν¯ are calculated. From simulated uniaxial stress-strain curves, ideal strength values σmax in the [100], [110], and [111] directions are also evaluated for all systems. In particular, rocksalt AlN is found to possess both high elastic moduli and ideal strength. These quantities are then compared for correlations with existing experimental Vicker's hardness data. The bulk modulus is found to be a poor indicator of hardness, while E, G, 1/ν¯, and σmax all exhibit stronger correlations. With a view to circumvent the need to run computationally expensive relaxation steps, different methodologies for approximating uniaxial stress-strain curves are introduced. Utilizing the anisotropic Poisson's ratio to approximate the relaxed transverse lattice parameters at a given axial strain is a good approximation to stress-strain curves, and the ideal strengths obtained in this way exhibit strong correlations to experimental Vicker's hardness values.

  10. Hemocompatibility of titanium nitride.

    Science.gov (United States)

    Dion, I; Baquey, C; Candelon, B; Monties, J R

    1992-10-01

    The left ventricular assist device is based on the principle of the Maillard-Wenkel rotative pump. The materials which make up the pump must present particular mechanical, tribological, thermal and chemical properties. Titanium nitride (TiN) because of its surface properties and graphite because of its bulk characteristics have been chosen. The present study evaluated the in vitro hemocompatibility of TiN coating deposited by the chemical vapor deposition process. Protein adsorption, platelet retention and hemolysis tests have been carried out. In spite of some disparities, the TiN behavior towards albumin and fibrinogen is interesting, compared with the one of a reference medical grade elastomer. The platelet retention test gives similar results as those achieved with the same elastomer. The hemolysis percentage is near to zero. TiN shows interesting characteristics, as far as mechanical and tribological problems are concerned, and presents very encouraging blood tolerability properties.

  11. Cubic Curves, Finite Geometry and Cryptography

    CERN Document Server

    Bruen, A A; Wehlau, D L

    2011-01-01

    Some geometry on non-singular cubic curves, mainly over finite fields, is surveyed. Such a curve has 9,3,1 or 0 points of inflexion, and cubic curves are classified accordingly. The group structure and the possible numbers of rational points are also surveyed. A possible strengthening of the security of elliptic curve cryptography is proposed using a `shared secret' related to the group law. Cubic curves are also used in a new way to construct sets of points having various combinatorial and geometric properties that are of particular interest in finite Desarguesian planes.

  12. Generalized Vaidya spacetime for cubic gravity

    CERN Document Server

    Ruan, Shan-Ming

    2015-01-01

    We present a kind of generalized Vaidya solutions of a new cubic gravity in five dimensions whose field equations in spherically spacetime are always second order like the Lovelock gravity. We also study the thermodynamics of its apparent horizon and get its entropy expression and generalized Misner-Sharp energy. Finally we present the first law and second law hold in this gravity. Although all the results are analogue to those in Lovelock gravity, we in fact introduce the contribution of new cubic term in five dimensions where cubic Lovelock term is just zero.

  13. Cubical sets as a classifying topos

    DEFF Research Database (Denmark)

    Spitters, Bas

    Coquand’s cubical set model for homotopy type theory provides the basis for a computational interpretation of the univalence axiom and some higher inductive types, as implemented in the cubical proof assistant. We show that the underlying cube category is the opposite of the Lawvere theory of De...... Morgan algebras. The topos of cubical sets itself classifies the theory of ‘free De Morgan algebras’. This provides us with a topos with an internal ‘interval’. Using this interval we construct a model of type theory following van den Berg and Garner. We are currently investigating the precise relation...

  14. Aluminum extraction from aluminum industrial wastes

    Science.gov (United States)

    Amer, A. M.

    2010-05-01

    Aluminum dross tailings, an industrial waste from the Egyptian Aluminum Company (Egyptalum), was used to produce two types of alums: aluminum sulfate alum (Al2(SO4)3·12H2O) and ammonium aluminum alum {(NH4)2SO4AL2 (SO4)3·24H2O}. This was carried out in two processes. The first involves leaching the impurities using diluted H2SO4 with different solid/liquid ratios at different temperatures to dissolve the impurities present in the starting material in the form of aluminum sulfates. The second process is the extraction of aluminum (as aluminum sulfate) from the purified aluminum dross tailings thus produced. This was carried out in an autoclave. The effects of temperature, time of reaction, and acid concentration on pressure leaching and extraction processes were studied in order to specify the optimum conditions to be applied in the bench scale production as well as the kinetics of leaching process.

  15. ALUMINUM BOX BUNDLING PRESS

    Directory of Open Access Journals (Sweden)

    Iosif DUMITRESCU

    2015-05-01

    Full Text Available In municipal solid waste, aluminum is the main nonferrous metal, approximately 80- 85% of the total nonferrous metals. The income per ton gained from aluminum recuperation is 20 times higher than from glass, steel boxes or paper recuperation. The object of this paper is the design of a 300 kN press for aluminum box bundling.

  16. Structure of the local environment of titanium atoms in multicomponent nitride coatings produced by plasma-ion techniques

    Science.gov (United States)

    Krysina, O. V.; Timchenko, N. A.; Koval, N. N.; Zubavichus, Ya V.

    2016-01-01

    An experiment was performed to examine the X-ray Absorption Near-Edge Structure (XANES) and the Extended X-ray Absorption Fine Structure (EXAFS) near the K-edge of titanium in nanocrystalline titanium nitride coatings containing additives of copper, silicon, and aluminum. Using the observation data, the structure parameters of the local environment of titanium atoms have been estimated for the coatings. According to crystallographic data, the Ti-N distance in the bulk phase of titanium nitride is 2.12 Å and the Ti-Ti distance is 3.0 Å. Nearly these values have been obtained for the respective parameters of the coatings. The presence of copper as an additive in a TiN coating increases the Ti-N distance inappreciably compared to that estimated for titanium nitride, whereas addition of silicon decreases the bond distance. It has been revealed that the copper and silicon atoms in Ti-Cu-N and Ti-Si-N coatings do not enter into the crystallographic phase of titanium nitride and do not form bonds with titanium and nitrogen, whereas the aluminum atoms in Ti-Al-N coatings form intermetallic phases with titanium and nitride phases.

  17. MOVING SCREW DISLOCATION IN CUBIC QUASICRYSTAL

    Institute of Scientific and Technical Information of China (English)

    ZHOU Wang-min; SONG Yu-hai

    2005-01-01

    The elasticity theory of the dislocation of cubic quasicrystals is developed.The governing equations of anti-plane elasticity dynamics problem of the quasicrystals were reduced to a solution of wave equations by introducing displacement functions,and the analytical expressions of displacements, stresses and energies induced by a moving screw dislocation in the cubic quasicrystalline and the velocity limit of the dislocation were obtained. These provide important information for studying the plastic deformation of the new solid material.

  18. 2-rational Cubic Spline Involving Tension Parameters

    Indian Academy of Sciences (India)

    M Shrivastava; J Joseph

    2000-08-01

    In the present paper, 1-piecewise rational cubic spline function involving tension parameters is considered which produces a monotonic interpolant to a given monotonic data set. It is observed that under certain conditions the interpolant preserves the convexity property of the data set. The existence and uniqueness of a 2-rational cubic spline interpolant are established. The error analysis of the spline interpolant is also given.

  19. Semisymmetric Cubic Graphs of Order 162

    Indian Academy of Sciences (India)

    Mehdi Alaeiyan; Hamid A Tavallaee; B N Onagh

    2010-02-01

    An undirected graph without isolated vertices is said to be semisymmetric if its full automorphism group acts transitively on its edge set but not on its vertex set. In this paper, we inquire the existence of connected semisymmetric cubic graphs of order 162. It is shown that for every odd prime , there exists a semisymmetric cubic graph of order 162 and its structure is explicitly specified by giving the corresponding voltage rules generating the covering projections.

  20. Cubical version of combinatorial differential forms

    DEFF Research Database (Denmark)

    Kock, Anders

    2010-01-01

    The theory of combinatorial differential forms is usually presented in simplicial terms. We present here a cubical version; it depends on the possibility of forming affine combinations of mutual neighbour points in a manifold, in the context of synthetic differential geometry.......The theory of combinatorial differential forms is usually presented in simplicial terms. We present here a cubical version; it depends on the possibility of forming affine combinations of mutual neighbour points in a manifold, in the context of synthetic differential geometry....

  1. Leachability of nitrided ilmenite in hydrochloric acid

    CSIR Research Space (South Africa)

    Swanepoel, JJ

    2010-10-01

    Full Text Available Titanium nitride in upgraded nitrided ilmenite (bulk of iron removed) can selectively be chlorinated to produce titanium tetrachloride. Except for iron, most other components present during this low temperature (ca. 200 °C) chlorination reaction...

  2. Plasmonic titanium nitride nanostructures for perfect absorbers

    DEFF Research Database (Denmark)

    Guler, Urcan; Li, Wen-Wei; Kinsey, Nathaniel

    2013-01-01

    We propose a metamaterial based perfect absorber in the visible region, and investigate the performance of titanium nitride as an alternative plasmonic material. Numerical and experimental results reveal that titanium nitride performs better than gold as a plasmonic absorbing material...

  3. Adsorption of sugars on Al- and Ga-doped boron nitride surfaces: A computational study

    Energy Technology Data Exchange (ETDEWEB)

    Darwish, Ahmed A. [Center for Nanotechnology, Zewail City of Science and Technology, Giza 12588 (Egypt); Department of Nuclear and Radiation Engineering, Faculty of Engineering, Alexandria University, Alexandria (Egypt); Fadlallah, Mohamed M. [Center for Fundamental Physics, Zewail City of Science and Technology, Giza 12588 (Egypt); Department of Physics, Faculty of Science, Benha University, Benha (Egypt); Badawi, Ashraf [Center for Nanotechnology, Zewail City of Science and Technology, Giza 12588 (Egypt); Maarouf, Ahmed A., E-mail: ahmed.maarouf@egnc.gov.eg [Center for Fundamental Physics, Zewail City of Science and Technology, Giza 12588 (Egypt); Egypt Nanotechnology Center & Department of Physics, Faculty of Science, Cairo University, Giza 12613 (Egypt)

    2016-07-30

    Highlights: • Doping boron nitride sheets with aluminum or gallium atoms significantly enhances their molecular adsorption properties. • Adsorption of glucose or glucosamine on Al- and Ga-doped boron nitride sheets changes the band gap. • Doping concentration changes the bad gap, but has a minor effect on the adsorption energy. - Abstract: Molecular adsorption on surfaces is a key element for many applications, including sensing and catalysis. Non-invasive sugar sensing has been an active area of research due to its importance to diabetes care. The adsorption of sugars on a template surface study is at the heart of matter. Here, we study doped hexagonal boron nitride sheets (h-BNNs) as adsorbing and sensing template for glucose and glucosamine. Using first principles calculations, we find that the adsorption of glucose and glucosamine on h-BNNs is significantly enhanced by the substitutional doping of the sheet with Al and Ga. Including long range van der Waals corrections gives adsorption energies of about 2 eV. In addition to the charge transfer occurring between glucose and the Al/Ga-doped BN sheets, the adsorption alters the size of the band gap, allowing for optical detection of adsorption. We also find that Al-doped boron nitride sheet is better than Ga-doped boron nitride sheet to enhance the adsorption energy of glucose and glucosamine. The results of our work can be potentially utilized when designing support templates for glucose and glucosamine.

  4. Experimental study of trimethyl aluminum decomposition

    Science.gov (United States)

    Zhang, Zhi; Pan, Yang; Yang, Jiuzhong; Jiang, Zhiming; Fang, Haisheng

    2017-09-01

    Trimethyl aluminum (TMA) is an important precursor used for metal-organic chemical vapor deposition (MOCVD) of most Al-containing structures, in particular of nitride structures. The reaction mechanism of TMA with ammonia is neither clear nor certain due to its complexity. Pyrolysis of trimethyl metal is the start of series of reactions, thus significantly affecting the growth. Experimental study of TMA pyrolysis, however, has not yet been conducted in detail. In this paper, a reflectron time-of-flight mass spectrometer is adopted to measure the TMA decomposition from room temperature to 800 °C in a special pyrolysis furnace, activated by soft X-ray from the synchrotron radiation. The results show that generation of methyl, ethane and monomethyl aluminum (MMA) indicates the start of the pyrolysis process. In the low temperature range from 25 °C to 700 °C, the main product is dimethyl aluminum (DMA) from decomposition of TMA. For temperatures larger than 700 °C, the main products are MMA, DMA, methyl and ethane.

  5. Cathodic Cage Plasma Nitriding: An Innovative Technique

    OpenAIRE

    Sousa,R.R.M.; de Araújo, F. O.; J. A. P. da Costa; Brandim,A.S.; R. A. de Brito; C. Alves

    2012-01-01

    Cylindrical samples of AISI 1020, AISI 316, and AISI 420 steels, with different heights, were simultaneously treated by a new technique of ionic nitriding, entitled cathodic cage plasma nitriding (CCPN), in order to evaluate the efficiency of this technique to produce nitrided layers with better properties compared with those obtained using conventional ionic nitriding technique. This method is able to eliminate the edge effect in the samples, promoting a better uniformity of temperature, and...

  6. Alumimun nitride piezoelectric NEMS resonators and switches

    Science.gov (United States)

    Piazza, G.

    2010-04-01

    A major challenge associated with the demonstration of high frequency and fast NanoElectroMechanical Systems (NEMS) components is the ability to efficiently transduce the nanomechanical device. This work presents noteworthy opportunities associated with the scaling of piezoelectric aluminum nitride (AlN) films from the micro to the nano realm and their application to the making of efficient NEMS resonators and switches that can be directly interfaced with conventional electronics. Experimental data showing NEMS AlN resonators (250 nm thick with lateral features as small as 300 nm) vibrating at record-high frequencies approaching 10 GHz with Qs close to 500 are presented. These NEMS resonators could be employed as sensors to tag analyte concentrations that reach the part per trillion levels or for frequency synthesis and filtering in ultra-compact microwave transceivers. 100 nm thick AlN films have been used to fabricate NEMS actuators for mechanical computing applications. Experimental data confirming that bimorph nanopiezo- actuators have the same piezoelectric properties of microscale counterparts and can be adopted for the implementation of mechanical logic elements are presented.

  7. Finish machining of hardened gears wheels using cubic boron nitride (CBN inserts

    Directory of Open Access Journals (Sweden)

    R. Talar

    2012-04-01

    Full Text Available The paper presents some results of investigation of finish machining of hardened bearing surfaces of cylindrical gear wheels. Finish machining has been performed with wedges of defined geometry made of CBN. The presented investigation results are related mainly to the wear processes of the cutting wedges. Additional results of quality examination of finish machined gear wheels have been presented, too.

  8. Possibilities of Increase of Adhesion of the Cubic Boron Nitride Coatings by Applying an Interfacial Layers

    Institute of Scientific and Technical Information of China (English)

    MaciejKupczyk

    2004-01-01

    In the work the chosen investigations of the adhesion force of thin, superhard coatings to the cutting edges made of cemented carbides are presented. For identification of the adhesion force of coatings to substrate an automatic scratch tester constructed at Poznan University of Technology was applied. The estimation of the adhesion force (value of critical load measured during scratch test) was carried out on the base of the vibration signal. Results of investigations are pointed at the influence of a surface preparation (degreasing, etching, low and high-temperature sputtering) on a critical load values. It was round that the most effective method for surface preparation is low temperature sputtering. The influence of the TiC+Al2O3+TiN interracial layer on increase of the adhesion force of BN coating to cemented carbides substrate was observed.

  9. Possibilities of Increase of Adhesion of the Cubic Boron Nitride Coatings by Applying an Interfacial Layers

    Institute of Scientific and Technical Information of China (English)

    Maciej Kupczyk

    2004-01-01

    In the work the chosen investigations of the adhesion force of thin, superhard coatings to the cutting edges made of cemented carbides are presented. For identification of the adhesion force of coatings to substrate an automatic scratch tester constructed at Poznan University of Technology was applied. The estimation of the adhesion force (value of critical load measured during scratch test) was carried out on the base of the vibration signal. Results of investigations are pointed at the influence of a surface preparation (degreasing, etching, low and high-temperature sputtering) on a critical load values.It was found that the most effective method for surface preparation is low temperature sputtering. The influence of the TiC+Al2O3+TiN interfacial layer on increase of the adhesion force of BN coating to cemented carbides substrate was observed.

  10. Natural oxidation of InN quantum dots: the role of cubic InN

    Energy Technology Data Exchange (ETDEWEB)

    Gonzalez, David; Lozano, Juan G.; Herrera, Miriam; Garcia, Rafael [Departamento de Ciencia de los Materiales e Ingenieria Metalurgica y Quimica Inorganica, Universidad de Cadiz, Apdo. 40, E-11510 Puerto Real (Cadiz) (Spain); Browning, Nigel D. [Department of Chemical Engineering and Materials Science, University of California-Davis, One Shields Ave, Davis, CA 95616 (United States); Chemistry, Materials and Life Sciences Directorate, Lawrence Livermore National Laboratory, 7000 East Avenue, Livermore, CA 94550 (United States); Ruffenach, Sandra; Briot, Olivier

    2010-01-15

    The natural aging process occured in indium nitride quantum dots (QDs) heterostructures as a consequence of exposure to the atmosphere has been studied by means of transmission electron microscopy and electron beam related techniques. The comparison between GaN-capped and uncapped InN QDs kept at room conditions during 36 months indicates the structural changes that take place. While the capping layer seems to act in a protective way avoiding any change in the QDs, the uncapped structures suffer a series of phase transformations, where the original wurtzite structure is replaced by a layer of cubic phases. The main constituent of this layer is shown to be bcc-In{sub 2}O{sub 3} formed by the substitution of the nitrogen atoms by oxygen from the atmosphere. This supposes a transformation from a hexagonal to a cubic structure, explained by the existence of an oxygen-rich cubic InN acting as an intermediate phase. The difference in the formation enthalpy between the original and the final product, together with the good match between the crystals would explain this transformation that shows the high instability of InN at environmental conditions. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  11. Theoretical Compton profile of diamond, boron nitride and carbon nitride

    Science.gov (United States)

    Aguiar, Julio C.; Quevedo, Carlos R.; Gomez, José M.; Di Rocco, Héctor O.

    2017-09-01

    In the present study, we used the generalized gradient approximation method to determine the electron wave functions and theoretical Compton profiles of the following super-hard materials: diamond, boron nitride (h-BN), and carbon nitride in its two known phases: βC3N4 and gC3N4 . In the case of diamond and h-BN, we compared our theoretical results with available experimental data. In addition, we used the Compton profile results to determine cohesive energies and found acceptable agreement with previous experiments.

  12. Mathematical Modelling of Nitride Layer Growth of Low Temperature Gas and Plasma Nitriding of AISI 316L

    Directory of Open Access Journals (Sweden)

    Triwiyanto A.

    2014-07-01

    Full Text Available This paper present mathematical model which developed to predict the nitrided layer thickness (case depth of gas nitrided and plasma nitrided austenitic stainless steel according to Fick’s first law for pure iron by adapting and manipulating the Hosseini’s model to fit the diffusion mechanism where nitrided structure formed by nitrided AISI 316L austenitic stainless steel. The mathematical model later tested against various actual gas nitriding and plasma nitriding experimental results with varying nitriding temperature and nitriding duration to see whether the model managed to successfully predict the nitrided layer thickness. This model predicted the coexistence of ε-Fe2-3N and γ΄-Fe4N under the present nitriding process parameters. After the validation process, it is proven that the mathematical model managed to predict the nitrided layer growth of the gas nitrided and plasma nitrided of AISI 316L SS up to high degree of accuracy.

  13. III-Nitride nanowire optoelectronics

    Science.gov (United States)

    Zhao, Songrui; Nguyen, Hieu P. T.; Kibria, Md. G.; Mi, Zetian

    2015-11-01

    Group-III nitride nanowire structures, including GaN, InN, AlN and their alloys, have been intensively studied in the past decade. Unique to this material system is that its energy bandgap can be tuned from the deep ultraviolet (~6.2 eV for AlN) to the near infrared (~0.65 eV for InN). In this article, we provide an overview on the recent progress made in III-nitride nanowire optoelectronic devices, including light emitting diodes, lasers, photodetectors, single photon sources, intraband devices, solar cells, and artificial photosynthesis. The present challenges and future prospects of III-nitride nanowire optoelectronic devices are also discussed.

  14. A New Method for Preparation of Nanocrystalline Molybdenum Nitride

    Institute of Scientific and Technical Information of China (English)

    SHEN Long-Hai; CUI Qi-Liang; ZHANG Jian; LI Xue-Fei; ZHOU Qiang; ZOU Guang-Tian

    2005-01-01

    @@ Nanocrystalline molybdenum nitride (γ-Mo2N) with the cubic structure is prepared by the direct-current arc discharge method in N2 gas, using metal Mo or W rod as a cathode. The x-ray diffraction (XRD) and transmission electron microscopy (TEM) are used to characterize the product. It is found that the conversion of Mo to γ-Mo2N and affinity of Mo to N2 are determined by the nitrogen pressur e. Moreover, we compare the effect of Mo and W rod as a cathode for preparing γ-Mo2N. The average size of γ-Mo2N particles is about 5nm. The rapid quenching mechanism can be used to explain the formation of nanocrystalline γ-Mo2N.

  15. Electronic structure of nitrides PuN and UN

    Energy Technology Data Exchange (ETDEWEB)

    Lukoyanov, A. V., E-mail: lukoyanov@imp.uran.ru; Anisimov, V. I. [Russian Academy of Sciences, Mikheev Institute of Metal Physics, Ural Branch (Russian Federation)

    2016-11-15

    The electronic structure of uranium and plutonium nitrides in ambient conditions and under pressure is investigated using the LDA + U + SO band method taking into account the spin–orbit coupling and the strong correlations of 5f electrons of actinoid ions. The parameters of these interactions for the equilibrium cubic structure are calculated additionally. The application of pressure reduces the magnetic moment in PuN due to predominance of the f{sup 6} configuration and the jj-type coupling. An increase in the occupancy of the 5f state in UN leads to a decrease in the magnetic moment, which is also detected in the trigonal structure of the UN{sub x} β phase (La{sub 2}O{sub 3}-type structure). The theoretical results are in good agreement with the available experimental data.

  16. Interpolation by two-dimensional cubic convolution

    Science.gov (United States)

    Shi, Jiazheng; Reichenbach, Stephen E.

    2003-08-01

    This paper presents results of image interpolation with an improved method for two-dimensional cubic convolution. Convolution with a piecewise cubic is one of the most popular methods for image reconstruction, but the traditional approach uses a separable two-dimensional convolution kernel that is based on a one-dimensional derivation. The traditional, separable method is sub-optimal for the usual case of non-separable images. The improved method in this paper implements the most general non-separable, two-dimensional, piecewise-cubic interpolator with constraints for symmetry, continuity, and smoothness. The improved method of two-dimensional cubic convolution has three parameters that can be tuned to yield maximal fidelity for specific scene ensembles characterized by autocorrelation or power-spectrum. This paper illustrates examples for several scene models (a circular disk of parametric size, a square pulse with parametric rotation, and a Markov random field with parametric spatial detail) and actual images -- presenting the optimal parameters and the resulting fidelity for each model. In these examples, improved two-dimensional cubic convolution is superior to several other popular small-kernel interpolation methods.

  17. Computational and experimental study of copper–gold nitride formation

    Energy Technology Data Exchange (ETDEWEB)

    Ponce-Cázares, I., E-mail: iponce@cnyn.unam.mx [Centro de Investigación Científica y de Educación Superior de Ensenada (CICESE), Carretera Tijuana-Ensenada No. 3918, A. Postal 360, 22860 Ensenada, B.C. (Mexico); Soto, G., E-mail: gerardo@cnyn.unam.mx [Universidad Nacional Autónoma de México, Centro de Nanociencias y Nanotecnología, Km. 107 Carretera Tijuana-Ensenada, C.P. 22860 Ensenada, B.C. (Mexico); Moreno-Armenta, Ma. Guadalupe, E-mail: moreno@cnyn.unam.mx [Universidad Nacional Autónoma de México, Centro de Nanociencias y Nanotecnología, Km. 107 Carretera Tijuana-Ensenada, C.P. 22860 Ensenada, B.C. (Mexico); De la Cruz, W., E-mail: wencel@cnyn.unam.mx [Universidad Nacional Autónoma de México, Centro de Nanociencias y Nanotecnología, Km. 107 Carretera Tijuana-Ensenada, C.P. 22860 Ensenada, B.C. (Mexico)

    2015-08-25

    Highlights: • The new Cu{sub 3}Au-nitride compound was successfully grown by the sputtering method. • This material is Cu{sub 3}Au{sub 0.5}N with cubic system (Pm3m space group), where the gold randomly occupies half of the 1a Wyckoff sites. • The material was a pseudo-gap conductor with conductance as good as a heavily-doped semiconductor at room temperature. - Abstract: This work investigates the formation of a Cu{sub 3}Au-nitride alloy using experimental and computational methods. For this purpose, we prepared a custom-made Cu–Au target and then hit it with argon ions in the presence of molecular nitrogen that produced a film on Corning glass. This film was analyzed using spectroscopic and diffraction techniques. The four-point-probe method and Tauc plots were applied to determine the electrical and optical properties of this thin film. Using first principle calculations a structural model was constructed that validated our observations. The crystalline system that we used was cubic (Pm3m space group) with half the sites filled with Au randomly. The composition was close to Cu{sub 3}Au{sub 0.5}N. In agreement with the electrical measurements and calculations, the Cu{sub 3}Au{sub 0.5}N band structure was highly affected by the Au incorporation since the electrical resistance and carrier density were in the 10{sup −3} Ω cm and 10{sup 22} cm{sup −3} ranges, respectively, and the optical gap decreased 0.61 eV with respect to the Cu{sub 3}N. The material was a pseudo-gap conductor with conductance as good as a heavily-doped semiconductor at room temperature; this should give it great potential for use in the optoelectronics industry.

  18. Boron Nitride Nanoribbons from Exfoliation of Boron Nitride Nanotubes

    Science.gov (United States)

    Hung, Ching-Cheh; Hurst, Janet; Santiago, Diana

    2017-01-01

    Two types of boron nitride nanotubes (BNNTs) were exfoliated into boron nitride nanoribbons (BNNR), which were identified using transmission electron microscopy: (1) commercial BNNTs with thin tube walls and small diameters. Tube unzipping was indicated by a large decrease of the sample's surface area and volume for pores less than 2 nm in diameter. (2) BNNTs with large diameters and thick walls synthesized at NASA Glenn Research Center. Here, tube unraveling was indicated by a large increase in external surface area and pore volume. For both, the exfoliation process was similar to the previous reported method to exfoliate commercial hexagonal boron nitride (hBN): Mixtures of BNNT, FeCl3, and NaF (or KF) were sequentially treated in 250 to 350 C nitrogen for intercalation, 500 to 750 C air for exfoliation, and finally HCl for purification. Property changes of the nanosized boron nitride throughout this process were also similar to the previously observed changes of commercial hBN during the exfoliation process: Both crystal structure (x-ray diffraction data) and chemical properties (Fourier-transform infrared spectroscopy data) of the original reactant changed after intercalation and exfoliation, but most (not all) of these changes revert back to those of the reactant once the final, purified products are obtained.

  19. Aspects of aluminum toxicity

    Energy Technology Data Exchange (ETDEWEB)

    Hewitt, C.D.; Savory, J.; Wills, M.R. (Univ. of Virginia Health Sciences Center, Charlottesville (USA))

    1990-06-01

    Aluminum is the most abundant metal in the earth's crust. The widespread occurrence of aluminum, both in the environment and in foodstuffs, makes it virtually impossible for man to avoid exposure to this metal ion. Attention was first drawn to the potential role of aluminum as a toxic metal over 50 years ago, but was dismissed as a toxic agent as recently as 15 years ago. The accumulation of aluminum, in some patients with chronic renal failure, is associated with the development of toxic phenomena; dialysis encephalopathy, osteomalacic dialysis osteodystrophy, and an anemia. Aluminum accumulation also occurs in patients who are not on dialysis, predominantly infants and children with immature or impaired renal function. Aluminum has also been implicated as a toxic agent in the etiology of Alzheimer's disease, Guamiam amyotrophic lateral sclerosis, and parkinsonism-dementia. 119 references.

  20. Homogeneous dispersion of gallium nitride nanoparticles in a boron nitride matrix by nitridation with urea.

    Science.gov (United States)

    Kusunose, Takafumi; Sekino, Tohru; Ando, Yoichi

    2010-07-01

    A Gallium Nitride (GaN) dispersed boron nitride (BN) nanocomposite powder was synthesized by heating a mixture of gallium nitrate, boric acid, and urea in a hydrogen atmosphere. Before heat treatment, crystalline phases of urea, boric acid, and gallium nitrate were recognized, but an amorphous material was produced by heat treatment at 400 degrees C, and then was transformed into GaN and turbostratic BN (t-BN) by further heat treatment at 800 degrees C. TEM obsevations of this composite powder revealed that single nanosized GaN particles were homogeneously dispersed in a BN matrix. Homogeneous dispersion of GaN nanoparticles was thought to be attained by simultaneously nitriding gallium nitrate and boric acid to GaN and BN with urea.

  1. Superhard BC(3) in cubic diamond structure.

    Science.gov (United States)

    Zhang, Miao; Liu, Hanyu; Li, Quan; Gao, Bo; Wang, Yanchao; Li, Hongdong; Chen, Changfeng; Ma, Yanming

    2015-01-01

    We solve the crystal structure of recently synthesized cubic BC(3) using an unbiased swarm structure search, which identifies a highly symmetric BC(3) phase in the cubic diamond structure (d-BC(3)) that contains a distinct B-B bonding network along the body diagonals of a large 64-atom unit cell. Simulated x-ray diffraction and Raman peaks of d-BC(3) are in excellent agreement with experimental data. Calculated stress-strain relations of d-BC(3) demonstrate its intrinsic superhard nature and reveal intriguing sequential bond-breaking modes that produce superior ductility and extended elasticity, which are unique among superhard solids. The present results establish the first boron carbide in the cubic diamond structure with remarkable properties, and these new findings also provide insights for exploring other covalent solids with complex bonding configurations.

  2. Cubical Cohomology Ring of 3D Photographs

    CERN Document Server

    Gonzalez-Diaz, Rocio; Medrano, Belen; 10.1002/ima.20271

    2011-01-01

    Cohomology and cohomology ring of three-dimensional (3D) objects are topological invariants that characterize holes and their relations. Cohomology ring has been traditionally computed on simplicial complexes. Nevertheless, cubical complexes deal directly with the voxels in 3D images, no additional triangulation is necessary, facilitating efficient algorithms for the computation of topological invariants in the image context. In this paper, we present formulas to directly compute the cohomology ring of 3D cubical complexes without making use of any additional triangulation. Starting from a cubical complex $Q$ that represents a 3D binary-valued digital picture whose foreground has one connected component, we compute first the cohomological information on the boundary of the object, $\\partial Q$ by an incremental technique; then, using a face reduction algorithm, we compute it on the whole object; finally, applying the mentioned formulas, the cohomology ring is computed from such information.

  3. Aluminum powder metallurgy processing

    Energy Technology Data Exchange (ETDEWEB)

    Flumerfelt, J.F.

    1999-02-12

    The objective of this dissertation is to explore the hypothesis that there is a strong linkage between gas atomization processing conditions, as-atomized aluminum powder characteristics, and the consolidation methodology required to make components from aluminum powder. The hypothesis was tested with pure aluminum powders produced by commercial air atomization, commercial inert gas atomization, and gas atomization reaction synthesis (GARS). A comparison of the GARS aluminum powders with the commercial aluminum powders showed the former to exhibit superior powder characteristics. The powders were compared in terms of size and shape, bulk chemistry, surface oxide chemistry and structure, and oxide film thickness. Minimum explosive concentration measurements assessed the dependence of explosibility hazard on surface area, oxide film thickness, and gas atomization processing conditions. The GARS aluminum powders were exposed to different relative humidity levels, demonstrating the effect of atmospheric conditions on post-atomization processing conditions. The GARS aluminum powders were exposed to different relative humidity levels, demonstrating the effect of atmospheric conditions on post-atomization oxidation of aluminum powder. An Al-Ti-Y GARS alloy exposed in ambient air at different temperatures revealed the effect of reactive alloy elements on post-atomization powder oxidation. The pure aluminum powders were consolidated by two different routes, a conventional consolidation process for fabricating aerospace components with aluminum powder and a proposed alternative. The consolidation procedures were compared by evaluating the consolidated microstructures and the corresponding mechanical properties. A low temperature solid state sintering experiment demonstrated that tap densified GARS aluminum powders can form sintering necks between contacting powder particles, unlike the total resistance to sintering of commercial air atomization aluminum powder.

  4. Synthesis of cubic Y zeolite using a pulsed microwave heating system

    Directory of Open Access Journals (Sweden)

    Araújo L.R.G. de

    1999-01-01

    Full Text Available Cubic Y zeolite were successfully synthesized using microwave heating for 18 - 25 min, whereas 10 - 50 h are required by hydrothermal heating technique depending upon the lattice Si/Al ratio. To this end, we used a commercial microwave oven modified in order to provide pulsed microwave pumping on the synthesis mixtures. The obtained samples were analyzed by X-ray diffraction, BET surface area and infrared spectroscopy measurements. As a result, we verify that Y zeolite samples obtained from hydrogels containing low aluminum contents, present a good degree of crystallinity and then can be suitable for using in adsorption and catalysis experiments.

  5. Purely cubic action for string field theory

    Science.gov (United States)

    Horowitz, G. T.; Lykken, J.; Rohm, R.; Strominger, A.

    1986-01-01

    It is shown that Witten's (1986) open-bosonic-string field-theory action and a closed-string analog can be written as a purely cubic interaction term. The conventional form of the action arises by expansion around particular solutions of the classical equations of motion. The explicit background dependence of the conventional action via the Becchi-Rouet-Stora-Tyutin operator is eliminated in the cubic formulation. A closed-form expression is found for the full nonlinear gauge-transformation law.

  6. Purely cubic action for string field theory

    Science.gov (United States)

    Horowitz, G. T.; Lykken, J.; Rohm, R.; Strominger, A.

    1986-01-01

    It is shown that Witten's (1986) open-bosonic-string field-theory action and a closed-string analog can be written as a purely cubic interaction term. The conventional form of the action arises by expansion around particular solutions of the classical equations of motion. The explicit background dependence of the conventional action via the Becchi-Rouet-Stora-Tyutin operator is eliminated in the cubic formulation. A closed-form expression is found for the full nonlinear gauge-transformation law.

  7. Rapid Microwave Synthesis, Characterization and Reactivity of Lithium Nitride Hydride, Li4NH

    Directory of Open Access Journals (Sweden)

    Nuria Tapia-Ruiz

    2013-11-01

    Full Text Available Lithium nitride hydride, Li4NH, was synthesised from lithium nitride and lithium hydride over minute timescales, using microwave synthesis methods in the solid state for the first time. The structure of the microwave-synthesised powders was confirmed by powder X-ray diffraction [tetragonal space group I41/a; a = 4.8864(1 Å, c = 9.9183(2 Å] and the nitride hydride reacts with moist air under ambient conditions to produce lithium hydroxide and subsequently lithium carbonate. Li4NH undergoes no dehydrogenation or decomposition [under Ar(g] below 773 K. A tetragonal–cubic phase transition, however, occurs for the compound at ca. 770 K. The new high temperature (HT phase adopts an anti-fluorite structure (space group Fm 3̅ m; a = 4.9462(3 Å with N3− and H− ions disordered on the 4a sites. Thermal treatment of Li4NH under nitrogen yields a stoichiometric mixture of lithium nitride and lithium imide (Li3N and Li2NH respectively.

  8. Structural and electrical properties of ultrathin niobium nitride films grown by atomic layer deposition

    Science.gov (United States)

    Linzen, S.; Ziegler, M.; Astafiev, O. V.; Schmelz, M.; Hübner, U.; Diegel, M.; Il'ichev, E.; Meyer, H.-G.

    2017-03-01

    We studied and optimised the properties of ultrathin superconducting niobium nitride films fabricated with a plasma-enhanced atomic layer deposition (PEALD) process. By adjusting process parameters, the chemical embedding of undesired oxygen into the films was minimised and a film structure consisting of mainly polycrystalline niobium nitride with a small fraction of amorphous niobium oxide and niobium oxo-nitrides were formed. For this composition a critical temperature of 13.8 K and critical current densities of 7 × 106 A cm-2 at 4.2 K were measured on 40 nm thick films. A fundamental correlation between these superconducting properties and the crystal lattice size of the cubic δ-niobium-nitride grains were found. Moreover, the film thickness variation between 40 and 2 nm exhibits a pronounced change of the electrical conductivity at room temperature and reveals a superconductor-insulator-transition in the vicinity of 3 nm film thickness at low temperatures. The thicker films with resistances up to 5 kΩ per square in the normal state turn to the superconducting one at low temperatures. The perfect thickness control and film homogeneity of the PEALD growth make such films extremely promising candidates for developing novel devices on the coherent quantum phase slip effect.

  9. Investigation into nitrided spur gears

    Energy Technology Data Exchange (ETDEWEB)

    Yilbas, B.S.; Coban, A.; Nickel, J.; Sunar, M.; Sami, M.; Abdul Aleem, B.J. [King Fahd Univ. of Petroleum and Minerals, Dhahran (Saudi Arabia)

    1996-12-01

    The cold forging method has been widely used in industry to produce machine parts. In general, gears are produced by shaping or hobbing. One of the shaping techniques is precision forging, which has several advantages over hobbing. In the present study, cold forging of spur gears from Ti-6Al-4V material is introduced. To improve the surface properties of the resulting gears, plasma nitriding was carried out. Nuclear reaction analysis was carried out to obtain the nitrogen concentration, while the micro-PIXE technique was used to determine the elemental distribution in the matrix after forging and nitriding processes. Scanning electron microscopy and x-ray powder diffraction were used to investigate the metallurgical changes and formation of nitride components in the surface region. Microhardness and friction tests were carried out to measure the hardness depth profile and friction coefficient at the surface. Finally, scoring failure tests were conducted to determine the rotational speed at which the gears failed. Three distinct regions were obtained in the nitride region, and at the initial stages of the scoring tests, failure in surface roughness was observed in the vicinity of the tip of the gear tooth. This occurred at a particular rotational speed and work input.

  10. Investigation into nitrided spur gears

    Science.gov (United States)

    Yilbas, B. S.; Coban, A.; Nickel, J.; Sunar, M.; Sami, M.; Aleem, B. J. Abdul

    1996-12-01

    The cold forging method has been widely used in industry to produce machine parts. In general, gears are produced by shaping or hobbing. One of the shaping techniques is precision forging, which has several advantages over hobbing. In the present study, cold forging of spur gears from Ti-6A1-4V material is introduced. To improve the surface properties of the resulting gears, plasma nitriding was carried out. Nuclear reaction analysis was carried out to obtain the nitrogen concentration, while the micro-PIXE technique was used to determine the elemental distribution in the matrix after forging and nitriding processes. Scanning electron microscopy and x-ray powder diffraction were used to investigate the metallurgical changes and formation of nitride components in the surface region. Microhardness and friction tests were carried out to measure the hardness depth profile and friction coefficient at the surface. Finally, scoring failure tests were conducted to determine the rotational speed at which the gears failed. Three distinct regions were obtained in the nitride region, and at the initial stages of the scoring tests, failure in surface roughness was observed in the vicinity of the tip of the gear tooth. This occurred at a particular rotational speed and work input.

  11. Investigation of a ferrite/silicon nitride composite concept aimed at automotive applications

    Energy Technology Data Exchange (ETDEWEB)

    Landeghem, Hugo Paul van; Redjaimia, Abdelkrim [Departement Sciences et Ingenierie des Materiaux et Metallurgie, Institut Jean Lamour, Ecole des Mines de Nancy, Parc de Saurupt, CS 14234, 54042 Nancy Cedex (France); Goune, Mohamed [Maizieres Automotive Products R and D, BP 30320, 57283 Maizieres-les-Metz Cedex (France); ICMCB-CNRS, 87 Avenue du Docteur Schweitzer, 33609 Pessac (France)

    2012-06-15

    This paper presents the investigation of the behavior of a Fe-1.5 wt% Si thin sheet upon plasma-assisted nitriding at 570 C. It had been confirmed that a very fine and intense precipitation of amorphous silicon nitride occurs as nitrogen diffuses into the sheet. The precipitates, the size of which is comprised between several and several tens of nanometer, display a cubic morphology in spite of their amorphous structure. These cubes adopt a particular morphology in relation to the matrix with their faces parallel to the {l_brace}100{r_brace} plane family. These precipitates cause a notable hardening of the alloy and it was possible to harden a 1 mm sheet across its whole thickness in under 8 h. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  12. Is the Aluminum Hypothesis Dead?

    OpenAIRE

    Lidsky, Theodore I.

    2014-01-01

    The Aluminum Hypothesis, the idea that aluminum exposure is involved in the etiology of Alzheimer disease, dates back to a 1965 demonstration that aluminum causes neurofibrillary tangles in the brains of rabbits. Initially the focus of intensive research, the Aluminum Hypothesis has gradually been abandoned by most researchers. Yet, despite this current indifference, the Aluminum Hypothesis continues to attract the attention of a small group of scientists and aluminum continues to be viewed w...

  13. High energy density aluminum battery

    Energy Technology Data Exchange (ETDEWEB)

    Brown, Gilbert M.; Paranthaman, Mariappan Parans; Dai, Sheng; Dudney, Nancy J.; Manthiram, Arumugan; McIntyre, Timothy J.; Sun, Xiao-Guang; Liu, Hansan

    2016-10-11

    Compositions and methods of making are provided for a high energy density aluminum battery. The battery comprises an anode comprising aluminum metal. The battery further comprises a cathode comprising a material capable of intercalating aluminum or lithium ions during a discharge cycle and deintercalating the aluminum or lithium ions during a charge cycle. The battery further comprises an electrolyte capable of supporting reversible deposition and stripping of aluminum at the anode, and reversible intercalation and deintercalation of aluminum or lithium at the cathode.

  14. High energy density aluminum battery

    Science.gov (United States)

    Brown, Gilbert M.; Paranthaman, Mariappan Parans; Dai, Sheng; Dudney, Nancy J.; Manthiram, Arumugan; McIntyre, Timothy J.; Sun, Xiao-Guang; Liu, Hansan

    2016-10-11

    Compositions and methods of making are provided for a high energy density aluminum battery. The battery comprises an anode comprising aluminum metal. The battery further comprises a cathode comprising a material capable of intercalating aluminum or lithium ions during a discharge cycle and deintercalating the aluminum or lithium ions during a charge cycle. The battery further comprises an electrolyte capable of supporting reversible deposition and stripping of aluminum at the anode, and reversible intercalation and deintercalation of aluminum or lithium at the cathode.

  15. DEFICIENT CUBIC SPLINES WITH AVERAGE SLOPE MATCHING

    Institute of Scientific and Technical Information of China (English)

    V. B. Das; A. Kumar

    2005-01-01

    We obtain a deficient cubic spline function which matches the functions with certain area matching over a greater mesh intervals, and also provides a greater flexibility in replacing area matching as interpolation. We also study their convergence properties to the interpolating functions.

  16. Counting rational points on cubic curves

    Institute of Scientific and Technical Information of China (English)

    HEATH-BROWN; Roger; TESTA; Damiano

    2010-01-01

    We prove upper bounds for the number of rational points on non-singular cubic curves defined over the rationals.The bounds are uniform in the curve and involve the rank of the corresponding Jacobian.The method used in the proof is a combination of the "determinant method" with an m-descent on the curve.

  17. CONSTRAINED RATIONAL CUBIC SPLINE AND ITS APPLICATION

    Institute of Scientific and Technical Information of China (English)

    Qi Duan; Huan-ling Zhang; Xiang Lai; Nan Xie; Fu-hua (Frank) Cheng

    2001-01-01

    In this paper, a kind of rational cubic interpolation functionwith linear denominator is constructed. The constrained interpolation with constraint on shape of the interpolating curves and on the second-order derivative of the interpolating function is studied by using this interpolation, and as the consequent result, the convex interpolation conditions have been derived.

  18. Anisotropy of a cubic ferromagnet at criticality

    Science.gov (United States)

    Kudlis, A.; Sokolov, A. I.

    2016-10-01

    Critical fluctuations change the effective anisotropy of cubic ferromagnet near the Curie point. If the crystal undergoes phase transition into orthorhombic phase and the initial anisotropy is not too strong, reduced anisotropy of nonlinear susceptibility acquires at Tc the universal value δ4*=2/v* 3 (u*+v*) where u* and v* are coordinates of the cubic fixed point on the flow diagram of renormalization group equations. In the paper, the critical value of the reduced anisotropy is estimated within the pseudo-ɛ expansion approach. The six-loop pseudo-ɛ expansions for u*, v*, and δ4* are derived for the arbitrary spin dimensionality n . For cubic crystals (n =3 ) higher-order coefficients of the pseudo-ɛ expansions obtained turn out to be so small that use of simple Padé approximants yields reliable numerical results. Padé resummation of the pseudo-ɛ series for u*, v*, and δ4* leads to the estimate δ4*=0.079 ±0.006 , indicating that detection of the anisotropic critical behavior of cubic ferromagnets in physical and computer experiments is certainly possible.

  19. Binomial Squares in Pure Cubic Number Fields

    CERN Document Server

    Lemmermeyer, Franz

    2011-01-01

    Let K = Q(\\omega) with \\omega^3 = m be a pure cubic number field. We show that the elements\\alpha \\in K^\\times whose squares have the form a - \\omega form a group isomorphic to the group of rational points on the elliptic curve E_m: y^2= x^3 - m.

  20. The cactus rank of cubic forms

    CERN Document Server

    Bernardi, Alessandra

    2011-01-01

    We prove that the smallest degree of an apolar 0-dimensional scheme to a general cubic form in $n+1$ variables is at most $2n+2$, when $n\\geq 8$, and therefore smaller than the rank of the form. When n=8 we show that the bound is sharp, i.e. the smallest degree of an apolar subscheme is 18.

  1. Is the Aluminum Hypothesis dead?

    Science.gov (United States)

    Lidsky, Theodore I

    2014-05-01

    The Aluminum Hypothesis, the idea that aluminum exposure is involved in the etiology of Alzheimer disease, dates back to a 1965 demonstration that aluminum causes neurofibrillary tangles in the brains of rabbits. Initially the focus of intensive research, the Aluminum Hypothesis has gradually been abandoned by most researchers. Yet, despite this current indifference, the Aluminum Hypothesis continues to attract the attention of a small group of scientists and aluminum continues to be viewed with concern by some of the public. This review article discusses reasons that mainstream science has largely abandoned the Aluminum Hypothesis and explores a possible reason for some in the general public continuing to view aluminum with mistrust.

  2. Anodizing Aluminum with Frills.

    Science.gov (United States)

    Doeltz, Anne E.; And Others

    1983-01-01

    "Anodizing Aluminum" (previously reported in this journal) describes a vivid/relevant laboratory experience for general chemistry students explaining the anodizing of aluminum in sulfuric acid and constrasting it to electroplating. Additions to this procedure and the experiment in which they are used are discussed. Reactions involved are…

  3. Pulsed laser deposition of niobium nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Farha, Ashraf Hassan, E-mail: ahass006@odu.edu; Elsayed-Ali, Hani E., E-mail: helsayed@odu.edu [Department of Electrical and Computer Engineering, Old Dominion University, Norfolk, VA 23529 (United States); Applied Research Center, Jefferson National Accelerator Facility, Newport News, VA 23606 (United States); Department of Physics, Faculty of Science, Ain Shams University, Cairo 11566 (Egypt); Ufuktepe, Yüksel, E-mail: ufuk@cu.edu.tr [Department of Physics, University of Cukurova, 01330 Adana (Turkey); Myneni, Ganapati, E-mail: rao@jlab.org [Thomas Jefferson National Accelerator Facility, Newport News, Virginia 23606 (United States)

    2015-12-04

    Niobium nitride (NbN{sub x}) films were grown on Nb and Si(100) substrates using pulsed laser deposition. NbN{sub x} films were deposited on Nb substrates using PLD with a Q-switched Nd:YAG laser (λ = 1064 nm, ∼40 ns pulse width, and 10 Hz repetition rate) at different laser fluences, nitrogen background pressures and deposition substrate temperatures. When all the fabrication parameters are fixed, except for the laser fluence, the surface roughness, nitrogen content, and grain size increase with increasing laser fluence. Increasing nitrogen background pressure leads to a change in the phase structure of the NbN{sub x} films from mixed β-Nb{sub 2}N and cubic δ-NbN phases to single hexagonal β-Nb{sub 2}N. The substrate temperature affects the preferred orientation of the crystal structure. The structural and electronic, properties of NbN{sub x} deposited on Si(100) were also investigated. The NbN{sub x} films exhibited a cubic δ-NbN with a strong (111) orientation. A correlation between surface morphology, electronic, and superconducting properties was found. The observations establish guidelines for adjusting the deposition parameters to achieve the desired NbN{sub x} film morphology and phase.

  4. The aluminum smelting process.

    Science.gov (United States)

    Kvande, Halvor

    2014-05-01

    This introduction to the industrial primary aluminum production process presents a short description of the electrolytic reduction technology, the history of aluminum, and the importance of this metal and its production process to modern society. Aluminum's special qualities have enabled advances in technologies coupled with energy and cost savings. Aircraft capabilities have been greatly enhanced, and increases in size and capacity are made possible by advances in aluminum technology. The metal's flexibility for shaping and extruding has led to architectural advances in energy-saving building construction. The high strength-to-weight ratio has meant a substantial reduction in energy consumption for trucks and other vehicles. The aluminum industry is therefore a pivotal one for ecological sustainability and strategic for technological development.

  5. The new Polish nitriding and nitriding like processes in the modern technology

    Energy Technology Data Exchange (ETDEWEB)

    Has, Z.; Kula, P. [Technical Univ. of Lodz (Poland)

    1995-12-31

    Modern technological methods for making nitrided layers and low-friction combined layers have been described. The possibilities of structures and properties forming were analyzed as well as the area and examples of application were considered. Nitrided layers are applied in high loaded frictional couples, widely. They can be formed on steel or cast iron machine parts by the classic gas nitriding process or by modern numerous nitriding technologies.

  6. Indium gallium nitride multijunction solar cell simulation using silvaco atlas

    OpenAIRE

    Garcia, Baldomero

    2007-01-01

    This thesis investigates the potential use of wurtzite Indium Gallium Nitride as photovoltaic material. Silvaco Atlas was used to simulate a quad-junction solar cell. Each of the junctions was made up of Indium Gallium Nitride. The band gap of each junction was dependent on the composition percentage of Indium Nitride and Gallium Nitride within Indium Gallium Nitride. The findings of this research show that Indium Gallium Nitride is a promising semiconductor for solar cell use. United...

  7. Fabrication and Characterization of a Ruthenium Nitride Membrane for Electrochemical pH Sensors

    Directory of Open Access Journals (Sweden)

    Yi-Hung Liao

    2009-04-01

    Full Text Available ThepH sensing and nonideal characteristics of a ruthenium nitride (RuN sensing membrane pH sensor were investigated. RuN thin films were deposited from a 99.9% ruthenium target on p-type silicon substrates using radio frequency (r.f. sputtering with N2 gas. Subsequently, the nanometric structure and surface morphology of RuN thin films were determined. The sensitivity of the RuN sensing membrane pH sensor was 58.03 mV/pH, obtained from ID-VG curves with a current-voltage (I-V measurement system in standard buffer solutions from pH 1 to pH 13 at room temperature (25 °C. Moreover, the nonideal characteristics of the RuN sensing membrane, such as temperature coefficient, drift with light influence, drift rate and hysteresis width, etc. were also investigated. Finally, the sensing characteristics of the RuN membrane were compared with titanium nitride (TiN, aluminum nitride (AlN and silicon nitride (Si3N4 membranes.

  8. Phase identification of iron nitrides and iron oxy-nitrides with Mossbauer spectroscopy

    NARCIS (Netherlands)

    Borsa, DM; Boerma, DO

    2003-01-01

    The Mossbauer spectroscopy of all known Fe nitrides is the topic of this paper. Most of the data were accumulated during a study of the growth of the various Fe nitride phases using molecular beam epitaxy of Fe in the presence of a flux of atomic N, or by post-nitriding freshly grown Fe layers also

  9. Science and technology in the recent development of boron nitride materials

    CERN Document Server

    Fukunaga, O

    2002-01-01

    In this paper, we review recent developments relating to cubic boron nitride (cBN) abrasive grains and sintered cutting tools. The demand for high-speed machining and the ecological benefits of using ferrous materials have led to developments in the area of heavy-duty dry cutting and grinding processes in recent years. Optimization of the process of manufacturing cBN materials is an important issue, both fundamentally and as regards applications. We review recent developments in cBN applications and discuss the challenges arising from new processes encountered in basic cBN study at high pressure and high temperature.

  10. High-pressure synthesis of tantalum nitride having orthorhombic U{sub 2}S{sub 3} structure

    Energy Technology Data Exchange (ETDEWEB)

    Zerr, Andreas [LPMTM-CNRS, Universite Paris Nord, Villetaneuse (France); Miehe, Gerhard; Dzivenko, Dmytro A. [FB Material- und Geowissenschaften, Technische Universitaet Darmstadt (Germany); Li, Jinwang; Watanabe, Tomoaki; Yoshimura, Masahiro [Materials and Structures Laboratory, Tokyo Institute of Technology, Midori-ku, Yokohama (Japan); Bulatov, Vadim K.; Hoefer, Heidi; Brey, Gerhard [Institut fuer Geowissenschaften, Goethe-Universitaet, Frankfurt am Main (Germany); Bolfan-Casanova, Nathalie [LMV-CNRS, Universite Clermont Ferrand (France); Fialin, Michel [Centre de microanalyse CAMPARIS-CNRS-UMR7154, Institut de Physique du Globe de Paris (France)

    2009-07-24

    Among binary compounds, there is a high potential for discovery of novel members (polymorphic phases or compounds) of the nitrides of transition metals group due to a pronounced dependence of the oxidation state of the metals (M) on pressure. The power of high pressure-high temperature (HP-HT) route for synthesis of binary nitrides has already been demonstrated by the discovery of cubic nitrides of the group 4 and 14 elements, of crystalline polymorphs of P{sub 3}N{sub 5}, and by reports on formation of four noble metal nitrides. It is anticipated that such HP products exhibit, in addition to enhanced elastic and mechanical behavior, other functional properties making them interesting for industrial applications. Here, HP-HT synthesis research is extended to nitrides of group 5 elements, resulting in the discovery of a novel hard tantalum nitride, exhibiting U{sub 2}S{sub 3} structure: {eta}-Ta{sub 2}N{sub 3} (Pbnm, a = 8.1911(17) A, b = 8.1830(17)A, c = 2.9823(3)A). The stoichiometry is supported by two independent means, verifying that {eta}-Ta{sub 2}N{sub 3} is the first thermodynamically stable transition metal nitride with a N:M ratio exceeding 4:3. Due to its high hardness and peculiar texture (needle-like and granular crystallites), {eta}-Ta{sub 2}N{sub 3} may find practical applications as a hard fracture resistant material. (Abstract Copyright [2009], Wiley Periodicals, Inc.)

  11. Ytterbium: Transition at High Pressure from Face-Centered Cubic to Body-Centered Cubic Structure.

    Science.gov (United States)

    Hall, H T; Barnett, J D; Merrill, L

    1963-01-11

    Pressure of 40,000 atmospheres at 25 degrees C induces a phase transformation in ytterbium metal; the face-centered cubic structure changes to body-centered cubic. The radius of the atom changes from 1.82 to 1.75 A. At the same time the atom's volume decreases by 11 percent and the volume, observed macroscopically, decreases 3.2 percent.

  12. Composite Reinforcement using Boron Nitride Nanotubes

    Science.gov (United States)

    2014-05-09

    Final 3. DATES COVERED (From - To) 11-Mar-2013 to 10-Mar-2014 4. TITLE AND SUBTITLE Composite Reinforcement using Boron Nitride Nanotubes...AVAILABILITY STATEMENT Approved for public release. 13. SUPPLEMENTARY NOTES 14. ABSTRACT Boron nitride nanotubes have been proposed as a...and titanium (Ti) metal clusters with boron nitride nanotubes (BNNT). First-principles density-functional theory plus dispersion (DFT-D) calculations

  13. Analysis of plasma-nitrided steels

    Science.gov (United States)

    Salik, J.; Ferrante, J.; Honecy, F.; Hoffman, R., Jr.

    1986-01-01

    The analysis of plasma nitrided steels can be divided to two main categories - structural and chemical. Structural analysis can provide information not only on the hardening mechanisms but also on the fundamental processes involved. Chemical analysis can be used to study the kinetics for the nitriding process and its mechanisms. In this paper preliminary results obtained by several techniques of both categories are presented and the applicability of those techniques to the analysis of plasma-nitrided steels is discussed.

  14. Clinical biochemistry of aluminum

    Energy Technology Data Exchange (ETDEWEB)

    King, S.W.; Savory, J.; Wills, M.R.

    1981-05-01

    Aluminum toxicity has been implicated in the pathogenesis of a number of clinical disorders in patients with chronic renal failure on long-term intermittent hemodialysis treatment. The predominant disorders have been those involving either bone (osteomalacic dialysis osteodystrophy) or brain (dialysis encephalopathy). In nonuremic patients, an increased brain aluminum concentration has been implicated as a neurotoxic agent in the pathogenesis of Alzheimer's disease and was associated with experimental neurofibrillary degeneration in animals. The brain aluminum concentrations of patients dying with the syndrome of dialysis encephalopathy (dialysis dementia) are significantly higher than in dialyzed patients without the syndrome and in nondialyzed patients. Two potential sources for the increased tissue content of aluminum in patients on hemodialysis have been proposed: (1) intestinal absorption from aluminum containing phosphate-binding gels, and (2) transfer across the dialysis membrane from aluminum in the water used to prepare the dialysate. These findings, coupled with our everyday exposure to the ubiquitous occurrence of aluminum in nature, have created concerns over the potential toxicity of this metal.

  15. Advances in aluminum pretreatment

    Energy Technology Data Exchange (ETDEWEB)

    Sudour, Michel; Maintier, Philippe [PPG Industries France, 3 Z.A.E. Les Dix Muids, B.P. 89, F-59583 Marly (France); Simpson, Mark [PPG Industries Inc., 1200 Piedmont Troy, Michigan 48083 (United States); Quaglia, Paolo [PPG Industries Italia, Via Garavelli 21, I-15028 Quattordio (Italy)

    2004-07-01

    As automotive manufacturers continue to look for ways to reduce vehicle weight, aluminum is finding more utility as a body panel component. The substitution of cold-rolled steel and zinc-coated substrates with aluminum has led to new challenges in vehicle pretreatment. As a result, changes to traditional pretreatment chemistries and operating practices are necessary in order to produce an acceptable coating on aluminum body panels. These changes result in increased sludging and other undesirable characteristics. In addition to the chemistry changes, there are also process-related problems to consider. Many existing automotive pretreatment lines simply were not designed to handle aluminum and its increased demands on filtration and circulation equipment. To retrofit such a system is capital intensive and in addition to requiring a significant amount of downtime, may not be totally effective. Thus, the complexities of pre-treating aluminum body panels have actually had a negative effect on efforts to introduce more aluminum into new vehicle design programs. Recent research into ways of reducing the negative effects has led to a new understanding of the nature of zinc phosphate bath -aluminum interactions. Many of the issues associated with the pretreatment of aluminum have been identified and can be mitigated with only minor changes to the zinc phosphate bath chemistry. The use of low levels of soluble Fe ions, together with free fluoride, has been shown to dramatically improve the efficiency of a zinc phosphate system processing aluminum. Appearance of zinc phosphate coatings, coating weights and sludge are all benefited by this chemistry change. (authors)

  16. Effect of plasma nitriding on electrodeposited Ni–Al composite coating

    DEFF Research Database (Denmark)

    Daemi, N.; Mahboubi, F.; Alimadadi, Hossein

    2011-01-01

    In this study plasma nitriding is applied on nickel–aluminum composite coating, deposited on steel substrate. Ni–Al composite layers were fabricated by electro-deposition process in Watt’s bath containing Al particles. Electrodeposited specimens were subjected to plasma atmosphere comprising of N2......–20% H2, at 500°C, for 5h. The surface morphology investigated, using a scanning electron microscope (SEM) and the surface roughness was measured by use of contact method. Chemical composition was analyzed by X-ray fluorescence spectroscopy and formation of AlN phase was confirmed by X-ray diffraction....... The corrosion resistance of composite coatings was measured by potentiodynamic polarization in 3.5% NaCl solution. The obtained results show that plasma nitriding process leads to an increase in microhardness and corrosion resistance, simultaneously....

  17. A modern perspective on the history of semiconductor nitride blue light sources

    Science.gov (United States)

    Maruska, Herbert Paul; Rhines, Walden Clark

    2015-09-01

    In this paper we shall discuss the development of blue light-emitting (LED) and laser diodes (LD), starting early in the 20th century. Various materials systems were investigated, but in the end, the nitrides of aluminum, gallium and indium proved to be the most effective. Single crystal thin films of GaN first emerged in 1968. Blue light-emitting diodes were first reported in 1971. Devices grown in the 1970s were prepared by the halide transport method, and were never efficient enough for commercial products due to contamination. Devices created by metal-organic vapor-phase epitaxy gave far superior performance. Actual true blue LEDs based on direct band-to-band transitions, free of recombination through deep levels, were finally developed in 1994, leading to a breakthrough in LED performance, as well as nitride based laser diodes in 1996. In 2014, the scientists who achieved these critical results were awarded the Nobel Prize in Physics.

  18. Face-Centered-Cubic Nanostructured Polymer Foams

    Science.gov (United States)

    Cui, C.; Baughman, R. H.; Liu, L. M.; Zakhidov, A. A.; Khayrullin, I. I.

    1998-03-01

    Beautifully iridescent polymer foams having Fm-3m cubic symmetry and periodicities on the scale of the wavelength of light have been synthesized by the templating of porous synthetic opals. These fabrication processes involve the filling of porous SiO2 opals (with typical cubic lattice parameters of 250 nm) with either polymers or polymer precursors, polymerization of the precursors if necessary, and removal of the fcc array of SiO2 balls to provide an all-polymer structure. The structures of these foams are similar to periodic minimal surfaces, although the Gaussian curvature can have both positive and negative values. Depending upon whether the internal surfaces of the opal are polymer filled or polymer coated, the polymer replica has either one or two sets of independent channels. We fill these channels with semiconductors, metals, or superconductors to provide electronic and optical materials with novel properties dependent on the nanoscale periodicity.

  19. Cubic Polynomials with Rational Roots and Critical Points

    Science.gov (United States)

    Gupta, Shiv K.; Szymanski, Waclaw

    2010-01-01

    If you want your students to graph a cubic polynomial, it is best to give them one with rational roots and critical points. In this paper, we describe completely all such cubics and explain how to generate them.

  20. Use of Pom Pons to Illustrate Cubic Crystal Structures.

    Science.gov (United States)

    Cady, Susan G.

    1997-01-01

    Describes a method that uses olefin pom pons to illustrate cubic crystal structure. Facilitates hands-on examination of different packing arrangements such as hexagonal close-packed and cubic close-packed structures. (JRH)

  1. Shape preserving rational bi-cubic function

    Directory of Open Access Journals (Sweden)

    Malik Zawwar Hussain

    2012-11-01

    Full Text Available The study is dedicated to the development of shape preserving interpolation scheme for monotone and convex data. A rational bi-cubic function with parameters is used for interpolation. To preserve the shape of monotone and convex data, the simple data dependent constraints are developed on these parameters in each rectangular patch. The developed scheme of this paper is confined, cheap to run and produce smooth surfaces.

  2. Cubic Lienard Equations with Quadratic Damping (Ⅱ)

    Institute of Scientific and Technical Information of China (English)

    Yu-quan Wang; Zhu-jun Jing

    2002-01-01

    Applying Hopf bifurcation theory and qualitative theory, we show that the general cubic Lienard equations with quadratic damping have at most three limit cycles. This implies that the guess in which the system has at most two limit cycles is false. We give the sufficient conditions for the system has at most three limit cycles or two limit cycles. We present two examples with three limit cycles or two limit cycles by using numerical simulation.

  3. Nucleation of iron nitrides during gaseous nitriding of iron; the effect of a preoxidation treatment

    DEFF Research Database (Denmark)

    Friehling, Peter B.; Poulsen, Finn Willy; Somers, Marcel A.J.

    2001-01-01

    grains. On prolonged nitriding, immediate nucleation at the surface of iron grains becomes possible. Calculated incubation times for the nucleation of gamma'-Fe4N1-x during nitriding are generally longer than those observed experimentally in the present work. The incubation time is reduced dramatically......The nucleation of iron nitrides during gaseous nitriding has been investigated using light microscopy and X-ray diffraction. Initially, the nucleation of gamma'-Fe4N1-x on a pure iron surface starts at grain boundaries meeting the surface, from where the nitride grains grow laterally into the iron...

  4. Magnetron sputter deposited tantalum and tantalum nitride thin films: An analysis of phase, hardness and composition

    Energy Technology Data Exchange (ETDEWEB)

    Bernoulli, D. [Laboratory for Nanometallurgy, Department of Materials, ETH-Zurich, Wolfgang-Pauli-Strasse 10, CH-8093 Zürich (Switzerland); Müller, U. [EMPA, Swiss Federal Laboratories for Material Science and Technology, Überlandstrasse 129, CH-8600 Dübendorf (Switzerland); Schwarzenberger, M. [Laboratory for Nanometallurgy, Department of Materials, ETH-Zurich, Wolfgang-Pauli-Strasse 10, CH-8093 Zürich (Switzerland); Hauert, R. [EMPA, Swiss Federal Laboratories for Material Science and Technology, Überlandstrasse 129, CH-8600 Dübendorf (Switzerland); Spolenak, R. [Laboratory for Nanometallurgy, Department of Materials, ETH-Zurich, Wolfgang-Pauli-Strasse 10, CH-8093 Zürich (Switzerland)

    2013-12-02

    Tantalum (Ta) and tantalum nitride thin films are highly important as diffusion barriers and adhesion layers in microelectronics and hard coatings for cutting tools. In this study, the effect of the underlying substrate on the phase formation of Ta and the influence of a changing N{sub 2}/Ar flow ratio on hardness, phase and composition of reactively formed tantalum nitride have been investigated. Ta is DC sputter deposited and forms β-Ta on amorphous diamond-like carbon and on the amorphous natural oxide layers of Ti and Si(100) while a 15 nm TaN seed layer results in the formation of α-Ta. The chemical composition of the topmost layers of a substrate influences the formation of α- and β-Ta. With increasing N{sub 2}/Ar flow ratios a transition from amorphous Ta-rich tantalum nitride over face-centered cubic tantalum nitride (fcc-TaN) to (100) textured fcc-TaN at flow ratios above 45% is observed. The hardness of the tantalum nitride thin film reaches a maximum at a flow ratio of 45%, followed by a decrease in hardness for higher N{sub 2}/Ar flow ratios. The increase in hardness is associated with a decrease in grain size and shows a stronger correlation for a Meyers and Ashworth relationship than for a Hall–Petch relationship. - Highlights: • Chemical composition of the substrate influences the phase of deposited Ta. • FCC-TaN seed layer leads to α-Ta on the natural oxide layers of Ti and Si(100). • Meyers and Ashworth relationship correlates stronger than Hall–Petch relationship.

  5. Local atomic structure in cubic stabilized zirconia

    Energy Technology Data Exchange (ETDEWEB)

    Villella, P.; Conradson, S. D.; Espinosa-Faller, F. J.; Foltyn, S. R.; Sickafus, K. E.; Valdez, J. A.; Degueldre, C. A.

    2001-09-01

    X-ray-absorption fine structure measurements have been used to elucidate the local atomic structure of quaternary Zr, Y, Er, Ce/U cubic stabilized zirconia. These compounds display more complicated local environments than those reported for simpler binary systems. While the shortest cation-O distances are similar to those found in the binary cubic stabilized compounds, responding to the different sizes of the cations, we have identified large distortions in the first-shell oxygen distribution involving long, 2.8--3.2 {angstrom} cation-O distances that are similar to those found in the amorphous phase of zirconium. The cation-cation distributions are also found to be quite complicated (non-Gaussian) and element specific. The U-near neighbor distances are expanded relative to the Ce ions for which it substitutes, consistent with the larger size of the actinide, and the U-cation distribution is also more complicated. In terms of the effects of this substitution on the other cation sites, the local environment around Y is altered while the Zr and Er local environments remain unchanged. These results point out the importance of collective and correlated interactions between the different pairs of cations and the host lattice that are mediated by the local strain fields generated by the different cations. The presence of pair-specific couplings has not been commonly included in previous analyses and may have implications for the stabilization mechanisms of cubic zirconia.

  6. The special symplectic structure of binary cubics

    CERN Document Server

    Slupinski, Marcus

    2009-01-01

    Let $k$ be a field of characteristic not 2 or 3. Let $V$ be the $k$-space of binary cubic polynomials. The natural symplectic structure on $k^2$ promotes to a symplectic structure $\\omega$ on $V$ and from the natural symplectic action of $\\textrm{Sl}(2,k)$ one obtains the symplectic module $(V,\\omega)$. We give a complete analysis of this symplectic module from the point of view of the associated moment map, its norm square $Q$ (essentially the classical discriminant) and the symplectic gradient of $Q$. Among the results are a symplectic derivation of the Cardano-Tartaglia formulas for the roots of a cubic, detailed parameters for all $\\textrm{Sl}(2,k)$ and $\\textrm{Gl}(2,k)$-orbits, in particular identifying a group structure on the set of $\\textrm{Sl}(2,k)$-orbits of fixed nonzero discriminant, and a purely symplectic generalization of the classical Eisenstein syzygy for the covariants of a binary cubic. Such fine symplectic analysis is due to the special symplectic nature inherited from the ambient excepti...

  7. Corrosion Inhibitors for Aluminum.

    Science.gov (United States)

    Muller, Bodo

    1995-01-01

    Describes a simple and reliable test method used to investigate the corrosion-inhibiting effects of various chelating agents on aluminum pigments in aqueous alkaline media. The experiments that are presented require no complicated or expensive electronic equipment. (DDR)

  8. Advances in aluminum anodizing

    Science.gov (United States)

    Dale, K. H.

    1969-01-01

    White anodize is applied to aluminum alloy surfaces by specific surface preparation, anodizing, pigmentation, and sealing techniques. The development techniques resulted in alloys, which are used in space vehicles, with good reflectance values and excellent corrosive resistance.

  9. CORROSION PROTECTION OF ALUMINUM

    Science.gov (United States)

    Dalrymple, R.S.; Nelson, W.B.

    1963-07-01

    Treatment of aluminum-base metal surfaces in an autoclave with an aqueous chromic acid solution of 0.5 to 3% by weight and of pH below 2 for 20 to 50 hrs at 160 to 180 deg C produces an extremely corrosion-resistant aluminum oxidechromium film on the surface. A chromic acid concentration of 1 to 2% and a pH of about 1 are preferred. (D.C.W.)

  10. Low temperature anodic bonding to silicon nitride

    DEFF Research Database (Denmark)

    Weichel, Steen; Reus, Roger De; Bouaidat, Salim;

    2000-01-01

    Low-temperature anodic bonding to stoichiometric silicon nitride surfaces has been performed in the temperature range from 3508C to 4008C. It is shown that the bonding is improved considerably if the nitride surfaces are either oxidized or exposed to an oxygen plasma prior to the bonding. Both bulk...

  11. Composite Reinforcement using Boron Nitride Nanotubes

    Science.gov (United States)

    2016-11-15

    ApprovedOMB No. 0704-0188 The public reporting burden for this collection of information is estimated to average 1 hour per response, including the time for...nitride nanotubes change with the presence of atomic oxygen were also carried out. 15.  SUBJECT TERMS Nanotubes, Boron Nitride, Composites, Theoretical

  12. PECVD silicon nitride diaphragms for condenser microphones

    NARCIS (Netherlands)

    Scheeper, P.R.; Voorthuyzen, J.A.; Bergveld, P.

    1991-01-01

    The application of plasma-enhanced chemical vapour deposited (PECVD) silicon nitride as a diaphragm material for condenser microphones has been investigated. By means of adjusting the SiH4/NH3 gas-flow composition, silicon-rich silicon nitride films have been obtained with a relatively low tensile s

  13. Method of preparation of uranium nitride

    Science.gov (United States)

    Kiplinger, Jaqueline Loetsch; Thomson, Robert Kenneth James

    2013-07-09

    Method for producing terminal uranium nitride complexes comprising providing a suitable starting material comprising uranium; oxidizing the starting material with a suitable oxidant to produce one or more uranium(IV)-azide complexes; and, sufficiently irradiating the uranium(IV)-azide complexes to produce the terminal uranium nitride complexes.

  14. Thermodynamics, kinetics and process control of nitriding

    DEFF Research Database (Denmark)

    Mittemeijer, Eric J.; Somers, Marcel A. J.

    1999-01-01

    , the nitriding result is determined largely by the kinetics of the process. The nitriding kinetics have been shown to be characterised by the occurring local near-equilibria and stationary states at surfaces and interfaces, and the diffusion coefficient of nitrogen in the various phases, for which new data have...

  15. Cathodic Cage Plasma Nitriding: An Innovative Technique

    Directory of Open Access Journals (Sweden)

    R. R. M. de Sousa

    2012-01-01

    Full Text Available Cylindrical samples of AISI 1020, AISI 316, and AISI 420 steels, with different heights, were simultaneously treated by a new technique of ionic nitriding, entitled cathodic cage plasma nitriding (CCPN, in order to evaluate the efficiency of this technique to produce nitrided layers with better properties compared with those obtained using conventional ionic nitriding technique. This method is able to eliminate the edge effect in the samples, promoting a better uniformity of temperature, and consequently, a smaller variation of the thickness/height relation can be obtained. The compound layers were characterized by X-ray diffraction, optical microscopy, and microhardness test profile. The results were compared with the properties of samples obtained with the conventional nitriding, for the three steel types. It was verified that samples treated by CCPN process presented, at the same temperature, a better uniformity in the thickness and absence of the edge effect.

  16. Hard carbon nitride and method for preparing same

    Science.gov (United States)

    Haller, E.E.; Cohen, M.L.; Hansen, W.L.

    1992-05-05

    Novel crystalline [alpha](silicon nitride-like)-carbon nitride and [beta](silicon nitride-like)-carbon nitride are formed by sputtering carbon in the presence of a nitrogen atmosphere onto a single crystal germanium or silicon, respectively, substrate. 1 figure.

  17. Molten-Salt-Based Growth of Group III Nitrides

    Science.gov (United States)

    Waldrip, Karen E.; Tsao, Jeffrey Y.; Kerley, Thomas M.

    2008-10-14

    A method for growing Group III nitride materials using a molten halide salt as a solvent to solubilize the Group-III ions and nitride ions that react to form the Group III nitride material. The concentration of at least one of the nitride ion or Group III cation is determined by electrochemical generation of the ions.

  18. Azide SHS of aluminium nitride nanopowder and its application for obtaining Al-Cu-AlN cast nanocomposite

    Science.gov (United States)

    Titova, Y. V.; Sholomova, A. V.; Kuzina, A. A.; Maidan, D. A.; Amosov, A. P.

    2016-11-01

    Method of azide self-propagating high-temperature synthesis (SHS-Az), using sodium azide (NaN3) as a nitriding reagent, was used for obtaining the nanopowder of aluminum nitride (AlN) from precursor that was sodium hexafluoroaluminate (Na3AlF6). The product of burning the mixture of Na3AlF6 + 3NaN3 after water rinsing consisted of micro - and nanoparticles of AlN (65%) and the residue of salt Na3AlF6 (35%). This product of SHS-Az was mixed with copper powder and pressed into a briquette of nanopowdery master alloy Cu- 4%(65%AlN+35%Na3AlF6), which was successfully introduced into aluminium melt at a temperature of 850°C. The salt Na3AlF6 in the product of combustion played a role of flux during introducing into the aluminum melt and was not included in the final composition of the composite alloy. The microstructure of the obtained cast composite aluminum alloy with the calculated composition of Al-1.2%Cu-0.035%AlN showed that the reinforcing particles of AlN of different sizes, including nanoparticles, were distributed mainly along the grain boundaries of the aluminum alloy.

  19. Solvothermal synthesis: a new route for preparing nitrides

    CERN Document Server

    Demazeau, G; Denis, A; Largeteau, A

    2002-01-01

    Solvothermal synthesis appears to be an interesting route for preparing nitrides such as gallium nitride and aluminium nitride, using ammonia as solvent. A nitriding additive is used to perform the reaction and, in the case of gallium nitride, is encapsulated by melt gallium. The syntheses are performed in the temperature range 400-800 deg. C and in the pressure range 100-200 MPa. The synthesized powders are characterized by x-ray diffraction and scanning electron microscopy. Finely divided gallium nitride GaN and aluminium nitride AlN, both with wurtzite-type structure, can be obtained by this route.

  20. Low pressure synthesis of boron nitride with(C2H5)2O·BF3 and Li3N precursor

    Institute of Scientific and Technical Information of China (English)

    WANG Shao-bo; XU Xiao-wei; FAN Hui-li; LI Yu-ping

    2005-01-01

    Cubic boron nitride(c-BN) was synthesized through benzene thermal method at a lower temperature of 300 ℃ by selecting liquid(C2H5)2O·BF3 and Li3N as reactants. Hexagonal boron nitride(h-BN) and orthorhombic boron nitride(o-BN) were also obtained. The samples were characterized by X-ray powder diffractometry and Fourier transformation infrared spectroscopy. The results show that all the BF3, BCl3 and BBr3 in the same family compounds can react with Li3N to synthesize BN since the strongest bond of B-F can be broken. Compared with BBr3, liquid (C2H5)2O·BF3 is cheaper, less toxic and more convenient to operate. Li3N not only provides nitrogen source but also has catalytic effect on accelerating the formation of c-BN at low temperature and pressure.

  1. Aluminum, parathyroid hormone, and osteomalacia

    Energy Technology Data Exchange (ETDEWEB)

    Burnatowska-Hledin, M.A.; Kaiser, L.; Mayor, G.H.

    1983-01-01

    Aluminum exposure in man is unavoidable. The occurrence of dialysis dementia, vitamin D-resistant osteomalacia, and hypochromic microcytic anemia in dialysis patients underscores the potential for aluminum toxicity. Although exposure via dialysate and hyperalimentation leads to significant tissue aluminum accumulation, the ubiquitous occurrence of aluminum and the severe pathology associated with large aluminum burdens suggest that smaller exposures via the gastrointestinal tract and lungs could represent an important, though largely unrecognized, public health problem. It is clear that some aluminum absorption occurs with the ingestion of small amounts of aluminum in the diet and medicines, and even greater aluminum absorption is seen in individuals consuming large amounts of aluminum present in antacids. Aluminum absorption is enhanced in the presence of elevated circulating parathyroid hormone. In addition, elevated PTH leads to the preferential deposition of aluminum in brain and bone. Consequently, PTH is likely to be involved in the pathogenesis of toxicities in those organs. PTH excess also seems to lead to the deposition of aluminum in the parathyroid gland. The in vitro demonstration that aluminum inhibits parathyroid hormone release is consistent with the findings of a euparathyroid state in dialysis patients with aluminum related vitamin D-resistant osteomalacia. Nevertheless, it seems likely that hyperparathyroidism is at least initially involved in the pathogenesis of aluminum neurotoxicity and osteomalacia; the increases in tissue aluminum stores are followed by suppression of parathyroid hormone release, which is required for the evolution of osteomalacia. Impaired renal function is not a prerequisite for increased tissue aluminum burdens, nor for aluminum-related organ toxicity. Consequently, it is likely that these diseases will be observed in populations other than those with chronic renal disease.

  2. Cherenkov and Scintillation Properties of Cubic Zirconium

    Science.gov (United States)

    Christl, M.J.; Adams, J.H.; Parnell, T.A.; Kuznetsov, E.N.

    2008-01-01

    Cubic zirconium (CZ) is a high index of refraction (n =2.17) material that we have investigated for Cherenkov counter applications. Laboratory and proton accelerator tests of an 18cc sample of CZ show that the expected fast Cherenkov response is accompanied by a longer scintillation component that can be separated by pulse shaping. This presents the possibility of novel particle spectrometers which exploits both properties of CZ. Other high index materials being examined for Cherenkov applications will be discussed. Results from laboratory tests and an accelerator exposure will be presented and a potential application in solar energetic particle instruments will be discussed

  3. Tachyon Vacuum in Cubic Superstring Field Theory

    CERN Document Server

    Erler, Theodore

    2008-01-01

    In this paper we give an exact analytic solution for tachyon condensation in the modified (picture 0) cubic superstring field theory. We prove the absence of cohomology and, crucially, reproduce the correct value for the D-brane tension. The solution is surprising for two reasons: First, the existence of a tachyon vacuum in this theory has not been definitively established in the level expansion. Second, the solution {\\it vanishes} in the GSO$(-)$ sector, implying a ``tachyon vacuum'' solution exists even for a {\\it BPS} D-brane.

  4. Generalized fairing algorithm of parametric cubic splines

    Institute of Scientific and Technical Information of China (English)

    WANG Yuan-jun; CAO Yuan

    2006-01-01

    Kjellander has reported an algorithm for fairing uniform parametric cubic splines. Poliakoff extended Kjellander's algorithm to non-uniform case. However, they merely changed the bad point's position, and neglected the smoothing of tangent at bad point. In this paper, we present a fairing algorithm that both changed point's position and its corresponding tangent vector. The new algorithm possesses the minimum property of energy. We also proved Poliakoff's fairing algorithm is a deduction of our fairing algorithm. Several fairing examples are given in this paper.

  5. Fractal Symmetries: Ungauging the Cubic Code

    CERN Document Server

    Williamson, Dominic J

    2016-01-01

    Gauging is a ubiquitous tool in many-body physics. It allows one to construct highly entangled topological phases of matter from relatively simple phases and to relate certain characteristics of the two. Here we develop a gauging procedure for general submanifold symmetries of Pauli Hamiltonians, including symmetries of fractal type. We show a relation between the pre- and post- gauging models and use this to construct short range entangled phases with fractal like symmetries, one of which is mapped to the cubic code by the gauging.

  6. The Exact Limit of Some Cubic Towers

    DEFF Research Database (Denmark)

    Anbar Meidl, Nurdagül; Beelen, Peter; Nguyen, Nhut

    2016-01-01

    Recently, a new explicit tower of function fields was introduced by Bassa, Beelen, Garcia and Stichtenoth (BBGS). This resulted in currently the best known lower bound for Ihara’s constant in the case of non-prime finite fields. In particular over cubic fields, the tower’s limit is at least as good...... as Zink’s bound; i.e. λ(BBGS/Fq3 ) ≥ 2(q2 - 1)/(q + 2). In this paper, the exact value of λ(BBGS/Fq3 ) is computed. We also settle a question stated by Ihara....

  7. Competing structural instabilities in cubic perovskites

    CERN Document Server

    Vanderbilt, D

    1994-01-01

    We study the antiferrodistortive instability and its interaction with ferroelectricity in cubic perovskite compounds. Our first-principles calculations show that coexistence of both instabilities is very common. We develop a first-principles scheme to study the thermodynamics of these compounds when both instabilities are present, and apply it to SrTiO$_3$. We find that increased pressure enhances the antiferrodistortive instability while suppressing the ferroelectric one. Moreover, the presence of one instability tends to suppress the other. A very rich $P$--$T$ phase diagram results.

  8. The Structure, Composition and Properties of Nitrided Alloys after Diffusion Metallization

    Directory of Open Access Journals (Sweden)

    V.G. Hignjak

    1990-01-01

    Full Text Available It has been examined the possibility of obtaining 9ХС and solid steel alloy multilayer coatings BK6 combination of nitriding in ammonia environment followed by titanium-aluminum in a powder mixture in containers with consumable gate. Barrier compositions of TiC, TiN positively effects on the phase and chemical composition of coatings. It also inhibits the formation of Fe(Al layer on steel 9ХС and areas with a high content of aluminum and oxygen on BK6 solid alloy. Nitrogen plus Titanium calorizing promotes abrasive wear resistance and stability of steel 9ХС, as well as stability of multifaceted carbide indexable BK6 plates.

  9. Fabrication of aluminum foam from aluminum scrap Hamza

    Directory of Open Access Journals (Sweden)

    O. A. Osman1 ,

    2015-02-01

    Full Text Available In this study the optimum parameters affecting the preparation of aluminum foam from recycled aluminum were studied, these parameters are: temperature, CaCO3 to aluminum scrap wt. ratio as foaming agent, Al2O3 to aluminum scrap wt. ratio as thickening agent, and stirring time. The results show that, the optimum parameters are the temperature ranged from 800 to 850oC, CaCO3 to aluminum scrap wt. ratio was 5%, Al2O3 to aluminum scrap wt. ratio was 3% and stirring time was 45 second with stirring speed 1200 rpm. The produced foam apparent densities ranged from 0.40-0.60 g/cm3. The microstructure of aluminum foam was examined by using SEM, EDX and XRD, the results show that, the aluminum pores were uniformly distributed along the all matrices and the cell walls covered by thin oxide film.

  10. Rheological properties of Cubic colloidal suspensions

    Science.gov (United States)

    Boromand, Arman; Maia, Joao

    2016-11-01

    Colloidal and non-colloidal suspensions are ubiquitous in many industrial application. There are numerous studies on these systems to understand and relate their complex rheological properties to their microstructural evolution under deformation. Although most of the experimental and simulation studies are centered on spherical particles, in most of the industrial applications the geometry of the colloidal particles deviate from the simple hard sphere and more complex geometries exist. Recent advances in microfabrication paved the way to fabricate colloidal particles with complex geometries for applications in different areas such as drug delivery where the fundamental understanding of their dynamics has remained unexplored. In this study, using dissipative particle dynamics, we investigate the rheological properties of cubic (superball) particles which are modeled as the cluster of core-modified DPD particles. Explicit representation of solvent particles in the DPD scheme will conserve the full hydrodynamic interactions between colloidal particles. Rheological properties of these cubic suspensions are investigated in the dilute and semi-dilute regimes. The Einstein and Huggins coefficients for these particles with different superball exponent will be calculate which represent the effect of single particle's geometry and multibody interactions on viscosity, respectively. The response of these suspensions is investigated under simple shear and oscillatory shear where it is shown that under oscillation these particles tend to form crystalline structure giving rise to stronger shear-thinning behavior recently measured experimentally.

  11. Radiation Damage and Fission Product Release in Zirconium Nitride

    Energy Technology Data Exchange (ETDEWEB)

    Egeland, Gerald W. [New Mexico Inst. of Mining and Technology, Socorro, NM (United States)

    2005-08-29

    lowered nitrogen stoichiometry, resulting in widely spaced partial dislocations in ZrN with high nitrogen vacancy concentration. The wide range of nitrogen stoichiometry in the phase field shows that ZrN may accept nitrogen defects readily. Explanations for this are suggested based upon the bonding structure of these cubic nitrides. This structure allows for a solid framework to remain on one sublattice, while at the same time allowing defects on the other sublattice. This allowance for defects allows significant damage from irradiation yet also decreases the drive for cluster growth. This is evidence that the structure will be acceptable for long-term use as a nuclear reactor fuel.

  12. Friction Characteristics of Nitrided Layers on AISI 430 Ferritic Stainless Steel Obtained by Various Nitriding Processes

    Directory of Open Access Journals (Sweden)

    Hakan AYDIN

    2013-03-01

    Full Text Available The influence of plasma, gas and salt-bath nitriding techniques on the friction coefficient of AISI 430 ferritic stainless steel was studied in this paper. Samples were plasma nitrided in 80 % N2 + 20 % H2 atmosphere at 450 °C and 520 °C for 8 h at a pressure of 2 mbar, gas nitrided in NH3 and CO2 atmosphere at 570 °C for 13 h and salt-bath nitrided in a cyanide-cyanate salt-bath at 570 °C for 1.5 h. Characterisation of nitrided layers on the ferritic stainless steel was carried out by means of microstructure, microhardness, surface roughness and friction coefficient measurements. Friction characteristics of the nitrided layers on the 430 steel were investigated using a ball-on-disc friction-wear tester with a WC-Co ball as the counter-body under dry sliding conditions. Analysis of wear tracks was carried out by scanning electron microscopy. Maximum hardness and maximum case depth were achieved on the plasma nitrided sample at 520 ºC for 8 h. The plasma and salt-bath nitriding techniques significantly decreased the average surface roughness of the 430 ferritic stainless steel. The friction test results showed that the salt-bath nitrided layer had better friction-reducing ability than the other nitrided layers under dry sliding conditions. Furthermore, the friction characteristic of the plasma nitrided layer at 520 ºC was better than that of the plasma nitrided layer at 450 °C.DOI: http://dx.doi.org/10.5755/j01.ms.19.1.3819

  13. Residual Stress Induced by Nitriding and Nitrocarburizing

    DEFF Research Database (Denmark)

    Somers, Marcel A.J.

    2005-01-01

    The present chapter is devoted to the various mechanisms involved in the buildup and relief of residual stress in nitrided and nitrocarburized cases. The work presented is an overview of model studies on iron and iron-based alloys. Subdivision is made between the compound (or white) layer......, developing at the surfce and consisting of iron-based (carbo)nitrides, and the diffusion zone underneath, consisting of iron and alloying element nitrides dispersed in af ferritic matrix. Microstructural features are related directly to the origins of stress buildup and stres relief....

  14. Plasma Nitriding of Low Alloy Sintered Steels

    Institute of Scientific and Technical Information of China (English)

    Shiva Mansoorzadeh; Fakhreddin Ashrafizadeh; Xiao-Ying Li; Tom Bell

    2004-01-01

    Fe-3Cr-0.5Mo-0.3C and Fe-3Cr-1.4Mn-0.5Mo-0.367C sintered alloys were plasma nitrided at different temperatures. Characterization was performed by microhardness measurement, optical microscopy, SEM and XRD. Both materials had similar nitriding case properties. 1.4% manganese did not change the as-sintered microstructure considerably.It was observed that monophase compound layer, γ, formed with increasing temperature. Compound layer thickness increased with increasing temperature while nitriding depth increased up to a level and then decreased. Core softening was more pronounced at higher temperature owing to cementite coarsening.

  15. Residual Stress Induced by Nitriding and Nitrocarburizing

    DEFF Research Database (Denmark)

    Somers, Marcel A.J.

    2005-01-01

    The present chapter is devoted to the various mechanisms involved in the buildup and relief of residual stress in nitrided and nitrocarburized cases. The work presented is an overview of model studies on iron and iron-based alloys. Subdivision is made between the compound (or white) layer......, developing at the surfce and consisting of iron-based (carbo)nitrides, and the diffusion zone underneath, consisting of iron and alloying element nitrides dispersed in af ferritic matrix. Microstructural features are related directly to the origins of stress buildup and stres relief....

  16. Atomic Resolution Microscopy of Nitrides in Steel

    DEFF Research Database (Denmark)

    Danielsen, Hilmar Kjartansson

    2014-01-01

    MN and CrMN type nitride precipitates in 12%Cr steels have been investigated using atomic resolution microscopy. The MN type nitrides were observed to transform into CrMN both by composition and crystallography as Cr diffuses from the matrix into the MN precipitates. Thus a change from one precip...... layer between the crystalline nitride and ferrite matrix. Usually precipitates are described as having (semi) coherent or incoherent interfaces, but in this case it is more energetically favourable to create an amorphous layer instead of the incoherent interface....

  17. Synthesis of ternary nitrides by mechanochemical alloying

    DEFF Research Database (Denmark)

    Jacobsen, C.J.H.; Zhu, J.J.; Lindelov, H.;

    2002-01-01

    Ternary metal nitrides ( of general formula MxM'N-y(z)) attract considerable interest because of their special mechanical, electrical, magnetic, and catalytic properties. Usually they are prepared by ammonolysis of ternary oxides (MxM'O-y(m)) at elevated temperatures. We show that ternary...... nitrides by mechanochemical alloying of a binary transition metal nitride (MxN) with an elemental transition metal. In this way, we have been able to prepare Fe3Mo3N and Co3Mo3N by ball-milling of Mo2N with Fe and Co, respectively. The transformation sequence from the starting materials ( the binary...

  18. Plasma nitriding of AISI 52100 ball bearing steel and effect of heat treatment on nitrided layer

    Indian Academy of Sciences (India)

    Ravindra Kumar; J Alphonsa; Ram Prakash; K S Boob; J Ghanshyam; P A Rayjada; P M Raole; S Mukherjee

    2011-02-01

    In this paper an effort has been made to plasma nitride the ball bearing steel AISI 52100. The difficulty with this specific steel is that its tempering temperature (∼170–200°C) is much lower than the standard processing temperature (∼460–580°C) needed for the plasma nitriding treatment. To understand the mechanism, effect of heat treatment on the nitrided layer steel is investigated. Experiments are performed on three different types of ball bearing races i.e. annealed, quenched and quench-tempered samples. Different gas compositions and process temperatures are maintained while nitriding these samples. In the quenched and quench-tempered samples, the surface hardness has decreased after plasma nitriding process. Plasma nitriding of annealed sample with argon and nitrogen gas mixture gives higher hardness in comparison to the hydrogen–nitrogen gas mixture. It is reported that the later heat treatment of the plasma nitrided annealed sample has shown improvement in the hardness of this steel. X-ray diffraction analysis shows that the dominant phases in the plasma nitrided annealed sample are (Fe2−3N) and (Fe4N), whereas in the plasma nitrided annealed sample with later heat treatment only -Fe peak occurs.

  19. Effect of Current Pathways During Spark Plasma Sintering of an Aluminum Alloy Powder

    Science.gov (United States)

    Kellogg, Frank; McWilliams, Brandon; Cho, Kyu

    2016-12-01

    Spark plasma sintering has been a well-studied processing technique primarily for its very high cooling and heating rates. However, the underlying phenomenon driving the sintering behavior of powders under an electric field is still poorly understood. In this study, we look at the effect of changing current pathways through the powder bed by changing die materials, from conductive graphite to insulating boron nitride for sintering aluminum alloy 5083 powder. We found that the aluminum powder itself was insulating and that by changing the current paths, we had to find alternate processing methods to initiate sintering. Altering the current pathways led to faster temperature raises and faster melting (and potentially densification) of the aluminum powder. A flash sintering effect in metallic powders is observed in which the powder compact undergoes a rapid transition from electrically insulating to conducting at a temperature of 583 K (310 °C).

  20. All unitary cubic curvature gravities in D dimensions

    Energy Technology Data Exchange (ETDEWEB)

    Sisman, Tahsin Cagri; Guellue, Ibrahim; Tekin, Bayram, E-mail: sisman@metu.edu.tr, E-mail: e075555@metu.edu.tr, E-mail: btekin@metu.edu.tr [Department of Physics, Middle East Technical University, 06531 Ankara (Turkey)

    2011-10-07

    We construct all the unitary cubic curvature gravity theories built on the contractions of the Riemann tensor in D-dimensional (anti)-de Sitter spacetimes. Our construction is based on finding the equivalent quadratic action for the general cubic curvature theory and imposing ghost and tachyon freedom, which greatly simplifies the highly complicated problem of finding the propagator of cubic curvature theories in constant curvature backgrounds. To carry out the procedure we have also classified all the unitary quadratic models. We use our general results to study the recently found cubic curvature theories using different techniques and the string generated cubic curvature gravity model. We also study the scattering in critical gravity and give its cubic curvature extensions.

  1. China’s Aluminum Resources

    Institute of Scientific and Technical Information of China (English)

    2004-01-01

    <正> The aluminum industry makes one of the keyindustries in China’s industrial and agriculturalmodernization and features a high degree ofrelevance with all industries.Of all the 124existing industries in China,113 use aluminum,representing an industrial relevance rate of91%.The consumption of aluminum is also ofhigh relevance with China’s GDP.

  2. Electrically conductive anodized aluminum coatings

    Science.gov (United States)

    Alwitt, Robert S. (Inventor); Liu, Yanming (Inventor)

    2001-01-01

    A process for producing anodized aluminum with enhanced electrical conductivity, comprising anodic oxidation of aluminum alloy substrate, electrolytic deposition of a small amount of metal into the pores of the anodized aluminum, and electrolytic anodic deposition of an electrically conductive oxide, including manganese dioxide, into the pores containing the metal deposit; and the product produced by the process.

  3. Synchronized metal-ion irradiation as a way to control growth of transition-metal nitride alloy films during hybrid HIPIMS/DCMS co-sputtering

    Science.gov (United States)

    Greczynski, Grzegorz

    2016-09-01

    High-power pulsed magnetron sputtering (HIPIMS) is particularly attractive for growth of transition metal (TM) nitride alloys for two reasons: (i) the high ionization degree of the sputtered metal flux, and (ii) the time separation of metal- and gas-ion fluxes incident at the substrate. The former implies that ion fluxes originating from elemental targets operated in HIPIMS are distinctly different from those that are obtained during dc magnetron sputtering (DCMS), which helps to separate the effects of HIPIMS and DCMS metal-ion fluxes on film properties. The latter feature allows one to minimize compressive stress due to gas-ion irradiation, by synchronizing the pulsed substrate bias with the metal-rich-plasma portion of the HIPIMS pulse. Here, we use pseudobinary TM nitride model systems TiAlN, TiSiN, TiTaN, and TiAlTaN to carry out experiments in a hybrid configuration with one target powered by HIPIMS, the other operated in DCMS mode. This allows us to probe the roles of intense and metal-ion fluxes (n = 1 , 2) from HIPIMS-powered targets on film growth kinetics, microstructure, and physical properties over a wide range of M1M2N alloy compositions. TiAlN and TiSiN mechanical properties are shown to be determined by the average metal-ion momentum transfer per deposited atom. Irradiation with lighter metal-ions (M1 =Al+ or Si+ during M1-HIPIMS/Ti-DCMS) yields fully-dense single-phase cubic Ti1-x (M1)x N films. In contrast, with higher-mass film constituent ions such as Ti+, easily exceeds the threshold for precipitation of second phase w-AlN or Si3N4. Based on the above results, a new PVD approach is proposed which relies on the hybrid concept to grow dense, hard, and stress-free thin films with no external heating. The primary targets, Ti and/or Al, operate in DCMS mode providing a continuous flux of sputter-ejected metal atoms to sustain a high deposition rate, while a high-mass target metal, Ta, is driven by HIPIMS to serve as a pulsed source of energetic

  4. Cubic meter volume optical coherence tomography

    Science.gov (United States)

    WANG, ZHAO; POTSAID, BENJAMIN; CHEN, LONG; DOERR, CHRIS; LEE, HSIANG-CHIEH; NIELSON, TORBEN; JAYARAMAN, VIJAYSEKHAR; CABLE, ALEX E.; SWANSON, ERIC; FUJIMOTO, JAMES G.

    2017-01-01

    Optical coherence tomography (OCT) is a powerful three-dimensional (3D) imaging modality with micrometer-scale axial resolution and up to multi-GigaVoxel/s imaging speed. However, the imaging range of high-speed OCT has been limited. Here, we report 3D OCT over cubic meter volumes using a long coherence length, 1310 nm vertical-cavity surface-emitting laser and silicon photonic integrated circuit dual-quadrature receiver technology combined with enhanced signal processing. We achieved 15 µm depth resolution for tomographic imaging at a 100 kHz axial scan rate over a 1.5 m range. We show 3D macroscopic imaging examples of a human mannequin, bicycle, machine shop gauge blocks, and a human skull/brain model. High-bandwidth, meter-range OCT demonstrates new capabilities that promise to enable a wide range of biomedical, scientific, industrial, and research applications. PMID:28239628

  5. Black holes in Einsteinian cubic gravity

    CERN Document Server

    Hennigar, Robie A

    2016-01-01

    Using numerical and perturbative methods, we construct the first examples of black hole solutions in Einsteinian cubic gravity and study their thermodynamics. Focusing first on four dimensional solutions, we show that these black holes have a novel equation of state in which the pressure is a quadratic function of the temperature. Despite this, they undergo a first order phase transition with associated van der Waals behaviour. We then construct perturbative solutions for general $D \\ge 5$ and study the properties of these solutions for $D=5$ and $D=6$ in particular. We find novel examples of zeroth order phase transitions and find super-entropic behaviour over a large portion of the parameter space. We analyse the specific heat, determining that the black holes are thermodynamically stable over large regions of parameter space.

  6. Triangulation of cubic panorama for view synthesis.

    Science.gov (United States)

    Zhang, Chunxiao; Zhao, Yan; Wu, Falin

    2011-08-01

    An unstructured triangulation approach, new to our knowledge, is proposed to apply triangular meshes for representing and rendering a scene on a cubic panorama (CP). It sophisticatedly converts a complicated three-dimensional triangulation into a simple three-step triangulation. First, a two-dimensional Delaunay triangulation is individually carried out on each face. Second, an improved polygonal triangulation is implemented in the intermediate regions of each of two faces. Third, a cobweblike triangulation is designed for the remaining intermediate regions after unfolding four faces to the top/bottom face. Since the last two steps well solve the boundary problem arising from cube edges, the triangulation with irregular-distribution feature points is implemented in a CP as a whole. The triangular meshes can be warped from multiple reference CPs onto an arbitrary viewpoint by face-to-face homography transformations. The experiments indicate that the proposed triangulation approach provides a good modeling for the scene with photorealistic rendered CPs.

  7. Black holes in a cubic Galileon universe

    CERN Document Server

    Babichev, Eugeny; Lehébel, Antoine; Moskalets, Tetiana

    2016-01-01

    We find and study the properties of black hole solutions for a subclass of Horndeski theory including the cubic Galileon term. The theory under study has shift symmetry but not reflection symmetry for the scalar field. The Galileon is assumed to have linear time dependence characterized by a velocity parameter. We give analytic 3-dimensional solutions that are akin to the BTZ solutions but with a non-trivial scalar field that modifies the effective cosmological constant. We then study the 4-dimensional asymptotically flat and de Sitter solutions. The latter present three different branches according to their effective cosmological constant. For two of these branches, we find families of black hole solutions, parametrized by the velocity of the scalar field. These spherically symmetric solutions, obtained numerically, are different from GR solutions close to the black hole event horizon, while they have the same de-Sitter asymptotic behavior. The velocity parameter represents black hole primary hair.

  8. Finite element differential forms on cubical meshes

    CERN Document Server

    Arnold, Douglas N

    2012-01-01

    We develop a family of finite element spaces of differential forms defined on cubical meshes in any number of dimensions. The family contains elements of all polynomial degrees and all form degrees. In two dimensions, these include the serendipity finite elements and the rectangular BDM elements. In three dimensions they include a recent generalization of the serendipity spaces, and new H(curl) and H(div) finite element spaces. Spaces in the family can be combined to give finite element subcomplexes of the de Rham complex which satisfy the basic hypotheses of the finite element exterior calculus, and hence can be used for stable discretization of a variety of problems. The construction and properties of the spaces are established in a uniform manner using finite element exterior calculus.

  9. Capturing dynamic cation hopping in cubic pyrochlores

    Science.gov (United States)

    Brooks Hinojosa, Beverly; Asthagiri, Aravind; Nino, Juan C.

    2011-08-01

    In direct contrast to recent reports, density functional theory predicts that the most stable structure of Bi2Ti2O7 pyrochlore is a cubic Fd3¯m space group by accounting for atomic displacements. The displaced Bi occupies the 96g(x,x,z) Wyckoff position with six equivalent sites, which create multiple local minima. Using nudged elastic band method, the transition states of Bi cation hopping between equivalent minima were investigated and an energy barrier between 0.11 and 0.21 eV was determined. Energy barriers associated with the motion of Bi between equivalent sites within the 96g Wyckoff position suggest the presence of dielectric relaxation in Bi2Ti2O7.

  10. On the plane-wave cubic vertex

    CERN Document Server

    Lucietti, J; Sinha, A K; Lucietti, James; Schäfer-Nameki, Sakura; Sinha, Aninda

    2004-01-01

    The exact bosonic Neumann matrices of the cubic vertex in plane-wave light-cone string field theory are derived using the contour integration techniques developed in our earlier paper. This simplifies the original derivation of the vertex. In particular, the Neumann matrices are written in terms of \\mu-deformed Gamma-functions, thus casting them into a form that elegantly generalizes the well-known flat-space solution. The asymptotics of the \\mu-deformed Gamma-functions allow one to determine the large-\\mu behaviour of the Neumann matrices including exponential corrections. We provide an explicit expression for the first exponential correction and make a conjecture for the subsequent exponential correction terms.

  11. Polarization conversion in cubic Raman crystals

    Science.gov (United States)

    McKay, Aaron; Sabella, Alexander; Mildren, Richard P.

    2017-01-01

    Nonlinear conversion of unpolarized beams to lower frequencies is generally inefficient in c(2) materials, as it is challenging to achieve phase-matching for input ordinary and extraordinary beams simultaneously in the normal dispersion regime. Here, we show that cubic Raman crystals having doubly and triply degenerate (E and F type) modes provide a method for efficient nonlinear frequency downconversion of an unpolarized beam and yield a linearly polarized output state. Using Mueller calculus, optimal crystal directions for such polarization conversion are determined. Using diamond, an example of an F-class Raman crystal, we have verified that such conversion is possible with near quantum-defect-limited slope efficiency and a linear polarization contrast of more than 23.9 dB. PMID:28169327

  12. On the Stability of Cubic Galileon Accretion

    CERN Document Server

    Bergliaffa, Santiago P E

    2016-01-01

    We examine the stability of steady-state galileon accretion for the case of a Schwarzshild black hole. Considering the galileon action up to the cubic term in a static and spherically symmetric background we obtain the general solution for the equation of motion which is divided in two branches. By perturbing this solution we define an effective metric which determines the propagation of fluctuations. In this general picture we establish the position of the sonic horizon together with the matching condition of the two branches on it. Restricting to the case of a Schwarzschild background, we show, via the analysis of the energy of the perturbations and its time derivative, that the accreting field is linearly stable.

  13. Tight-binding branch-point energies and band offsets for cubic InN, GaN, AlN, and AlGaN alloys

    Science.gov (United States)

    Mourad, Daniel

    2013-03-01

    Starting with empirical tight-binding band structures, the branch-point (BP) energies and resulting valence band offsets for the zincblende phase of InN, GaN, and AlN are calculated from their k-averaged midgap energy. Furthermore, the directional dependence of the BPs of GaN and AlN is discussed using the Green's function method of Tersoff. We then show how to obtain the BPs for binary semiconductor alloys within a band-diagonal representation of the coherent potential approximation and apply this method to cubic AlGaN alloys. The resulting band offsets show good agreement to available experimental and theoretical data from the literature. Our results can be used to determine the band alignment in isovalent heterostructures involving pure cubic III-nitrides or AlGaN alloys for arbitrary concentrations.

  14. Shape preserving rational cubic spline for positive and convex data

    Directory of Open Access Journals (Sweden)

    Malik Zawwar Hussain

    2011-11-01

    Full Text Available In this paper, the problem of shape preserving C2 rational cubic spline has been proposed. The shapes of the positive and convex data are under discussion of the proposed spline solutions. A C2 rational cubic function with two families of free parameters has been introduced to attain the C2 positive curves from positive data and C2 convex curves from convex data. Simple data dependent constraints are derived on free parameters in the description of rational cubic function to obtain the desired shape of the data. The rational cubic schemes have unique representations.

  15. Invisible Display in Aluminum

    DEFF Research Database (Denmark)

    Prichystal, Jan Phuklin; Hansen, Hans Nørgaard; Bladt, Henrik Henriksen

    2005-01-01

    for an integrated display in a metal surface is often ruled by design and functionality of a product. The integration of displays in metal surfaces requires metal removal in order to clear the area of the display to some extent. The idea behind an invisible display in Aluminum concerns the processing of a metal...

  16. Aluminum for Plasmonics

    Science.gov (United States)

    2014-01-01

    in plasmon-enhanced light harvesting,14 photocatalysis ,511 surface- enhanced spectroscopies,1216 optics-based sensing,1722 nonlinear optics,2326...optical response of Al nanoparticles has appeared inconsistent relative to calculated spectra, even forwell-characterized geometries. Some studies have...model- ing their optical response. These results pro- vide a method for estimating the metallic purity of aluminum nanoparticles directly from their

  17. Optical Design of Dilute Nitride Quantum Wells Vertical Cavity Semiconductor Optical Amplifiers for Communication Systems

    Directory of Open Access Journals (Sweden)

    Faten A. Chaqmaqchee

    2016-04-01

    Full Text Available III-V semiconductors components such as Gallium Arsenic (GaAs, Indium Antimony (InSb, Aluminum Arsenic (AlAs and Indium Arsenic (InAs have high carrier mobilities and direct energy gaps. This is making them indispensable for today’s optoelectronic devices such as semiconductor lasers and optical amplifiers at 1.3 μm wavelength operation. In fact, these elements are led to the invention of the Gallium Indium Nitride Arsenic (GaInNAs, where the lattice is matched to GaAs for such applications. This article is aimed to design dilute nitride GaInNAs quantum wells (QWs enclosed between top and bottom of Aluminum (Gallium Arsenic Al(GaAs distributed bragg mirrors (DBRs using MATLAB® program. Vertical cavity semiconductor optical amplifiers (VCSOAs structures are based on Fabry Perot (FP method to design optical gain and bandwidth gain to be operated in reflection and transmission modes. The optical model gives access to the contact layer of epitaxial structure and the reflectivity for successive radiative modes, their lasing thresholds, emission wavelengths and optical field distributions in the laser cavity.

  18. Surface modification of titanium by plasma nitriding

    Directory of Open Access Journals (Sweden)

    Kapczinski Myriam Pereira

    2003-01-01

    Full Text Available A systematic investigation was undertaken on commercially pure titanium submitted to plasma nitriding. Thirteen different sets of operational parameters (nitriding time, sample temperature and plasma atmosphere were used. Surface analyses were performed using X-ray diffraction, nuclear reaction and scanning electron microscopy. Wear tests were done with stainless steel Gracey scaler, sonic apparatus and pin-on-disc machine. The obtained results indicate that the tribological performance can be improved for samples treated with the following conditions: nitriding time of 3 h; plasma atmosphere consisting of 80%N2+20%H2 or 20%N2+80%H2; sample temperature during nitriding of 600 or 800 degreesC.

  19. Titanium nitride nanoparticles for therapeutic applications

    DEFF Research Database (Denmark)

    Guler, Urcan; Kildishev, Alexander V.; Boltasseva, Alexandra;

    2014-01-01

    Titanium nitride nanoparticles exhibit plasmonic resonances in the biological transparency window where high absorption efficiencies can be obtained with small dimensions. Both lithographic and colloidal samples are examined from the perspective of nanoparticle thermal therapy. © 2014 OSA....

  20. Materials synthesis: Two-dimensional gallium nitride

    Science.gov (United States)

    Koratkar, Nikhil A.

    2016-11-01

    Graphene is used as a capping sheet to synthesize 2D gallium nitride by means of migration-enhanced encapsulation growth. This technique may allow the stabilization of 2D materials that are not amenable to synthesis by traditional methods.

  1. Dissolution of bulk specimens of silicon nitride

    Science.gov (United States)

    Davis, W. F.; Merkle, E. J.

    1981-01-01

    An accurate chemical characterization of silicon nitride has become important in connection with current efforts to incorporate components of this material into advanced heat engines. However, there are problems concerning a chemical analysis of bulk silicon nitride. Current analytical methods require the pulverization of bulk specimens. A pulverization procedure making use of grinding media, on the other hand, will introduce contaminants. A description is given of a dissolution procedure which overcomes these difficulties. It has been found that up to at least 0.6 g solid pieces of various samples of hot pressed and reaction bonded silicon nitride can be decomposed in a mixture of 3 mL hydrofluoric acid and 1 mL nitric acid overnight at 150 C in a Parr bomb. High-purity silicon nitride is completely soluble in nitric acid after treatment in the bomb. Following decomposition, silicon and hydrofluoric acid are volatilized and insoluble fluorides are converted to a soluble form.

  2. Characterisation of nano-structured titanium and aluminium nitride coatings by indentation, transmission electron microscopy and electron energy loss spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Girleanu, M., E-mail: maria.girleanu@uha.fr [Mecanique, Materiaux et Procedes de Fabrication, LPMT (EA CNRS 4365), Universite de Haute Alsace, 61 rue Albert Camus, F-68093 Mulhouse (France); Pac, M.-J.; Louis, P. [Mecanique, Materiaux et Procedes de Fabrication, LPMT (EA CNRS 4365), Universite de Haute Alsace, 61 rue Albert Camus, F-68093 Mulhouse (France); Ersen, O.; Werckmann, J. [Departement Structures et Interfaces, IPCMS (UMR CNRS 7504), Universite de Strasbourg, 23 rue du Loess, F-67087 Strasbourg (France); Rousselot, C. [Departement Micro Nano Sciences et Systemes, FEMTO-ST (UMR CNRS 6174), Universite de Franche-Comte, BP 71427, F-25211 Montbeliard (France); Tuilier, M.-H. [Mecanique, Materiaux et Procedes de Fabrication, LPMT (EA CNRS 4365), Universite de Haute Alsace, 61 rue Albert Camus, F-68093 Mulhouse (France)

    2011-07-01

    Titanium and aluminium nitride Ti{sub 1-x}Al{sub x}N films deposited by radiofrequency magnetron reactive sputtering onto steel substrate are examined by transmission electron microscopy over all the range of composition (x = 0, 0.5, 0.68, 0.86, 1). The deposition parameters are optimised in order to grow nitride films with low stress over all the composition range. Transmission electron microscopy cross-section images of Vickers indentation prints performed on that set of coatings show the evolution of their damage behaviour as increasing x Al content. Cubic Ti-rich nitrides consist of small grains clustered in rather large columns sliding along each other during indentation. Hexagonal Al-rich films grow in thinner columns which can be bent under the Vickers tip. Indentation tests carried out on TiN and AlN films are simulated using finite element modelling. Particular aspects of shear stresses and displacements in the coating/substrate are investigated. The growth mode and the nanostructure of two typical films, TiN and Ti{sub 0.14}Al{sub 0.86}N, are studied in detail by combining transmission electron microscopy cross-sections and plan views. Electron energy loss spectrum taken across Ti{sub 0.14}Al{sub 0.86}N film suggests that a part of nitrogen atoms is in cubic-like local environment though the lattice symmetry of Al-rich coatings is hexagonal. The poorly crystallised domains containing Ti and N atoms in cubic-like environment are obviously located in grain boundaries and afford protection of the coating against cracking.

  3. Reticulated porous silicon nitride-based ceramics

    OpenAIRE

    Mazzocchi, Mauro; Medri, Valentina; Guicciardi, Stefano

    2012-01-01

    The interest towards the production of porous silicon nitride originates from the unique combination of light weight, of mechanical and physical properties typical of this class of ceramics that make them attractive for many engineering applications. Although pores are generally believed to deteriorate the mechanical properties of ceramics (the strength of porous ceramics decreases exponentially with an increase of porosity), the recent literature reports that porous silicon nitride can exhib...

  4. The Nitrogen-Nitride Anode.

    Energy Technology Data Exchange (ETDEWEB)

    Delnick, Frank M.

    2014-10-01

    Nitrogen gas N 2 can be reduced to nitride N -3 in molten LiCl-KCl eutectic salt electrolyte. However, the direct oxidation of N -3 back to N 2 is kinetically slow and only occurs at high overvoltage. The overvoltage for N -3 oxidation can be eliminated by coordinating the N -3 with BN to form the dinitridoborate (BN 2 -3 ) anion which forms a 1-D conjugated linear inorganic polymer with -Li-N-B-N- repeating units. This polymer precipitates out of solution as Li 3 BN 2 which becomes a metallic conductor upon delithiation. Li 3 BN 2 is oxidized to Li + + N 2 + BN at about the N 2 /N -3 redox potential with very little overvoltage. In this report we evaluate the N 2 /N -3 redox couple as a battery anode for energy storage.

  5. Modelling of the layer evolution during nitriding processes

    Energy Technology Data Exchange (ETDEWEB)

    Figueroa, U.; Oseguera, J.; Schabes, P. [CEM, Atizapan (Mexico)

    1995-12-31

    The evolution of concomitant layers of nitrides is presented. The layer formation is experimentally achieved through two processes: Nitriding with a weakly ionized plasma and nitrogen post-discharge nitriding. The nitriding processes were performed on samples of pure iron and carbon steel. Nitriding temperatures were close but different from the eutectoid transformation point temperature. The experimental layer growth pattern is compared with a model of mass transfer, in which interface mass balance is considered. In the model the authors have considered the formation of one and two compact nitride layers. For short time of treatment, it is shown that a parabolic profile does not satisfactorily describe the layer growth.

  6. Reduction of Oxidative Melt Loss of Aluminum and Its Alloys

    Energy Technology Data Exchange (ETDEWEB)

    Dr. Subodh K. Das; Shridas Ningileri

    2006-03-17

    This project led to an improved understanding of the mechanisms of dross formation. The microstructural evolution in industrial dross samples was determined. Results suggested that dross that forms in layers with structure and composition determined by the local magnesium concentration alone. This finding is supported by fundamental studies of molten metal surfaces. X-ray photoelectron spectroscopy data revealed that only magnesium segregates to the molten aluminum alloy surface and reacts to form a growing oxide layer. X-ray diffraction techniques that were using to investigate an oxidizing molten aluminum alloy surface confirmed for the first time that magnesium oxide is the initial crystalline phase that forms during metal oxidation. The analytical techniques developed in this project are now available to investigate other molten metal surfaces. Based on the improved understanding of dross initiation, formation and growth, technology was developed to minimize melt loss. The concept is based on covering the molten metal surface with a reusable physical barrier. Tests in a laboratory-scale reverberatory furnace confirmed the results of bench-scale tests. The main highlights of the work done include: A clear understanding of the kinetics of dross formation and the effect of different alloying elements on dross formation was obtained. It was determined that the dross evolves in similar ways regardless of the aluminum alloy being melted and the results showed that amorphous aluminum nitride forms first, followed by amorphous magnesium oxide and crystalline magnesium oxide in all alloys that contain magnesium. Evaluation of the molten aluminum alloy surface during melting and holding indicated that magnesium oxide is the first crystalline phase to form during oxidation of a clean aluminum alloy surface. Based on dross evaluation and melt tests it became clear that the major contributing factor to aluminum alloy dross was in the alloys with Mg content. Mg was

  7. Electrochemical Solution Growth of Magnetic Nitrides

    Energy Technology Data Exchange (ETDEWEB)

    Monson, Todd C. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Pearce, Charles [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2014-10-01

    Magnetic nitrides, if manufactured in bulk form, would provide designers of transformers and inductors with a new class of better performing and affordable soft magnetic materials. According to experimental results from thin films and/or theoretical calculations, magnetic nitrides would have magnetic moments well in excess of current state of the art soft magnets. Furthermore, magnetic nitrides would have higher resistivities than current transformer core materials and therefore not require the use of laminates of inactive material to limit eddy current losses. However, almost all of the magnetic nitrides have been elusive except in difficult to reproduce thin films or as inclusions in another material. Now, through its ability to reduce atmospheric nitrogen, the electrochemical solution growth (ESG) technique can bring highly sought after (and previously inaccessible) new magnetic nitrides into existence in bulk form. This method utilizes a molten salt as a solvent to solubilize metal cations and nitrogen ions produced electrochemically and form nitrogen compounds. Unlike other growth methods, the scalable ESG process can sustain high growth rates (~mm/hr) even under reasonable operating conditions (atmospheric pressure and 500 °C). Ultimately, this translates into a high throughput, low cost, manufacturing process. The ESG process has already been used successfully to grow high quality GaN. Below, the experimental results of an exploratory express LDRD project to access the viability of the ESG technique to grow magnetic nitrides will be presented.

  8. Multi-objective optimization of steel nitriding

    Directory of Open Access Journals (Sweden)

    P. Cavaliere

    2016-03-01

    Full Text Available Steel nitriding is a thermo-chemical process largely employed in the machine components production to solve mainly wear and fatigue damage in materials. The process is strongly influenced by many different variables such as steel composition, nitrogen potential (range 0.8–35, temperature (range 350–1200 °C, time (range 2–180 hours. In the present study, the influence of such parameters affecting the nitriding layers' thickness, hardness, composition and residual stress was evaluated. The aim was to streamline the process by numerical–experimental analysis allowing to define the optimal conditions for the success of the process. The optimization software that was used is modeFRONTIER (Esteco, through which was defined a set of input parameters (steel composition, nitrogen potential, nitriding time, etc. evaluated on the basis of an optimization algorithm carefully chosen for the multi-objective analysis. The mechanical and microstructural results belonging to the nitriding process, performed with different processing conditions for various steels, are presented. The data were employed to obtain the analytical equations describing nitriding behavior as a function of nitriding parameters and steel composition. The obtained model was validated through control designs and optimized by taking into account physical and processing conditions.

  9. Mechanical and electrochemical characterization of vanadium nitride (VN) thin films

    Energy Technology Data Exchange (ETDEWEB)

    Caicedo, J.C., E-mail: Jcesarca@calima.univalle.edu.co [Grupo de Peliculas Delgadas, Departamento de Fisica, Universidad del Valle, Cali (Colombia); Zambrano, G. [Grupo de Peliculas Delgadas, Departamento de Fisica, Universidad del Valle, Cali (Colombia); Aperador, W. [Ingenieria Mecatronica, Universidad Militar Nueva Granada, Bogota (Colombia); Escobar-Alarcon, L.; Camps, E. [Departamento de Fisica, Instituto Nacional de Investigaciones Nucleares, Apdo. Postal 18-1027, Mexico, DF 11801 (Mexico)

    2011-10-15

    Vanadium nitride (V-N) thin films were grown using a reactive d.c. magnetron sputtering process, from a vanadium target (99.999%) in an Ar/N{sub 2} gas mixture at different deposition bias voltage. Films were deposited onto silicon (1 0 0) and RUS-3 steel substrates at 400 deg. C. Structural, compositional, mechanical and electrochemical characterizations were performed by X-ray diffraction (XRD), elastic forward analysis (EFA), nanoindentation, electrochemical impedance spectroscopy (EIS), and Tafel polarization curves, respectively. X-ray diffraction patterns show the presence of (1 1 1) and (2 0 0) crystallographic orientations associated to the V-N cubic phase. Nanoindentation measurements revealed that when the bias voltage increases from 0 V to -150 V the hardness and elastic modulus are increased from 11 GPa to 20 GPa and from 187 GPa to 221 GPa, respectively. EIS and Tafel curves showed that the corrosion rate of steel, coated with V-N single layer films deposited without bias voltage, diminishes 90% compared to the steel without this coating. On the other hand, when the V-N coating was deposited at the highest d.c. bias voltage (-150 V), the corrosion rate was greater than in the steel coated with zero-voltage (0 V) V-N films. This last result could be attributed to the formation of porosities produced by the ion bombardment during the deposition process.

  10. Origin of rectification in boron nitride heterojunctions to silicon.

    Science.gov (United States)

    Teii, Kungen; Hori, Takuro; Mizusako, Yusei; Matsumoto, Seiichiro

    2013-04-10

    Cubic and hexagonal boron nitride (cBN and hBN) heterojunctions to n-type Si are fabricated under low-energy ion bombardment by inductively coupled plasma-enhanced chemical vapor deposition using the chemistry of fluorine. The sp2-bonded BN/Si heterojunction shows no rectification, while the cBN/sp2BN/Si heterojunction has rectification properties analogue to typical p-n junction diodes despite a large thickness (∼130 nm) of the sp2BN interlayer. The current-voltage characteristics at temperatures up to 573 K are governed by thermal excitation of carriers, and mostly described with the ideal diode equation and the Frenkel-Poole emission model at low and high bias voltages, respectively. The rectification in the cBN/sp2BN/Si heterojunction is caused by a bias-dependent change in the barrier height for holes arising from stronger p-type conduction in the cBN layer and enhanced with the thick sp2BN interlayer for impeding the reverse current flow at defect levels mainly associated with grain boundaries.

  11. Superconducting niobium nitride films deposited by unbalanced magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Olaya, J.J. [Departamento de Ingenieria Mecanica y Mecatronica, Universidad Nacional de Colombia, Ciudad Universitaria, Carrera 30 Numero 45-03, Bogota (Colombia); Huerta, L. [Instituto de Investigaciones en Materiales, Universidad Nacional Autonoma de Mexico, Circuito exterior s/n, CU Coyoacan, Mexico D.F. 04510 (Mexico); Rodil, S.E. [Instituto de Investigaciones en Materiales, Universidad Nacional Autonoma de Mexico, Circuito exterior s/n, CU Coyoacan, Mexico D.F. 04510 (Mexico)], E-mail: ser42@iim.unam.mx; Escamilla, R. [Instituto de Investigaciones en Materiales, Universidad Nacional Autonoma de Mexico, Circuito exterior s/n, CU Coyoacan, Mexico D.F. 04510 (Mexico)

    2008-10-01

    Niobium nitride (NbN) thin films were deposited under different configurations of the magnetic field using a magnetron sputtering system. The magnetic field configuration varied from balanced to unbalanced leading to different growth conditions and film properties. The aim of the paper was to identify correlations between deposition conditions, film properties and the electrical properties, specially the superconductive critical temperature (T{sub C}). The results suggested that there is a critical deposition condition, having an optimum ion-atom arrival ratio that promotes a well ordered and textured nanocrystalline structure (cubic phase) with the minimum residual stress and only under this condition a high critical temperature (16K) was obtained. Lower T{sub C} values around 12K were obtained for the NbN samples having a lower degree of structural perfection and texture, and a larger fraction of intergranular voids. On the other hand, analysis of valence-band spectra showed that the contribution of the Nb 4d states remained essentially constant while the higher T{sub C} was correlated to a higher contribution of the N 2p states.

  12. Electrical and optical properties of silicon-doped gallium nitride polycrystalline films

    Indian Academy of Sciences (India)

    S R Bhattacharyya; A K Pal

    2008-02-01

    Si-doped GaN films in polycrystalline form were deposited on quartz substrates at deposition temperatures ranging from 300–623 K using r.f. sputtering technique. Electrical, optical and microstructural properties were studied for these films. It was observed that films deposited at room temperature contained mainly hexagonal gallium nitride (ℎ-GaN) while films deposited at 623 K were predominantly cubic (-GaN) in nature. The films deposited at intermediate temperatures were found to contain both the hexagonal and cubic phases of GaN. Studies on the variation of conductivity with temperature indicated Mott’s hopping for films containing -GaN while Efros and Shklovskii (E–S) hopping within the Coulomb gap was found to dominate the carrier transport mechanism in the films containing ℎ-GaN. A crossover from Mott’s hopping to E–S hopping in the `soft’ Coulomb gap was noticed with lowering of temperature for films containing mixed phases of GaN. The relative intensity of the PL peak at ∼ 2.73 eV to that for peak at ∼ 3.11 eV appearing due to transitions from deep donor to valence band or shallow acceptors decreased significantly at higher temperature. Variation of band gap showed a bowing behaviour with the amount of cubic phase present in the films.

  13. Direct access to macroporous chromium nitride and chromium titanium nitride with inverse opal structure.

    Science.gov (United States)

    Zhao, Weitian; DiSalvo, Francis J

    2015-03-21

    We report a facile synthesis of single-phase, nanocrystalline macroporous chromium nitride and chromium titanium nitride with an inverse opal morphology. The material is characterized using XRD, SEM, HR-TEM/STEM, TGA and XPS. Interconversion of macroporous CrN to Cr2O3 and back to CrN while retaining the inverse opal morphology is also demonstrated.

  14. Junctions between a boron nitride nanotube and a boron nitride sheet.

    Science.gov (United States)

    Baowan, Duangkamon; Cox, Barry J; Hill, James M

    2008-02-20

    For future nanoelectromechanical signalling devices, it is vital to understand how to connect various nanostructures. Since boron nitride nanostructures are believed to be good electronic materials, in this paper we elucidate the classification of defect geometries for combining boron nitride structures. Specifically, we determine possible joining structures between a boron nitride nanotube and a flat sheet of hexagonal boron nitride. Firstly, we determine the appropriate defect configurations on which the tube can be connected, given that the energetically favourable rings for boron nitride structures are rings with an even number of sides. A new formula E = 6+2J relating the number of edges E and the number of joining positions J is established for each defect, and the number of possible distinct defects is related to the so-called necklace and bracelet problems of combinatorial theory. Two least squares approaches, which involve variation in bond length and variation in bond angle, are employed to determine the perpendicular connection of both zigzag and armchair boron nitride nanotubes with a boron nitride sheet. Here, three boron nitride tubes, which are (3, 3), (6, 0) and (9, 0) tubes, are joined with the sheet, and Euler's theorem is used to verify geometrically that the connected structures are sound, and their relationship with the bonded potential energy function approach is discussed. For zigzag tubes (n,0), it is proved that such connections investigated here are possible only for n divisible by 3.

  15. Structural analysis of nitride layer formed on uranium metal by glow plasma surface nitriding

    Energy Technology Data Exchange (ETDEWEB)

    Liu Kezhao, E-mail: liukz@hotmail.com [State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China); Science and Technology on Surface Physics and Chemistry Laboratory, P.O. Box 718-35, Mianyang 621907 (China); Bin Ren [Science and Technology on Surface Physics and Chemistry Laboratory, P.O. Box 718-35, Mianyang 621907 (China); Xiao Hong [China Academy of Engineering Physics, P.O. Box 919-71, Mianyang 621907 (China); Long Zhong [State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China); Hong Zhanglian, E-mail: hong_zhanglian@zju.edu.cn [State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China); Yang Hui [State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China); Wu Sheng [China Academy of Engineering Physics, P.O. Box 919-71, Mianyang 621907 (China)

    2013-01-15

    Highlights: Black-Right-Pointing-Pointer The nitride layer was formed on uranium by glow plasma surface nitriding. Black-Right-Pointing-Pointer Four zones were observed in the nitride layer. Black-Right-Pointing-Pointer The chemical states of uranium, nitrogen, and oxygen were identified by AES. - Abstract: The nitride layer was formed on uranium metal by a glow plasma surface nitriding method. The structure and composition of the layer were investigated by X-ray diffraction and Auger electron spectroscopy. The nitride layer mainly consisted of {alpha}-phase U{sub 2}N{sub 3} nanocrystals with an average grain size about 10-20 nm. Four zones were identified in the layer, which were the oxide surface zone, the nitride mainstay zone, the oxide-existence interface zone, and the nitrogen-diffusion matrix zone. The gradual decrease of binding energies of uranium revealed the transition from oxide to nitride to metal states with the layer depth, while the chemical states of nitrogen and oxygen showed small variation.

  16. Redox supercapacitor performance of nanocrystalline molybdenum nitrides obtained by ammonolysis of chloride- and amide-derived precursors

    Science.gov (United States)

    Shah, S. Imran U.; Hector, Andrew L.; Owen, John R.

    2014-11-01

    Reactions of MoCl5 or Mo(NMe2)4 with ammonia result in cubic γ-Mo2N or hexagonal δ1-MoN depending on reaction time and temperature. At moderate temperatures the cubic product from Mo(NMe2)4 exhibits lattice distortions. Fairly high surface areas are observed in the porous particles of the chloride-derived materials and high capacitances of up to 275 F g-1 are observed when electrodes made from them are cycled in aqueous H2SO4 or K2SO4 electrolytes. The cyclic voltammograms suggest charge is largely stored in the electrochemical double layer at the surface of these materials. Amide-derived molybdenum nitrides have relatively low surface areas and smaller capacitances, but do exhibit strong redox features in their cyclic voltammograms, suggesting that redox capacitance is responsible for a significant proportion of the charge stored.

  17. Identification of nitriding mechanisms in high purity reaction bonded silicon nitride

    Energy Technology Data Exchange (ETDEWEB)

    Haggerty, J.S.

    1993-03-01

    The rapid, low-temperature nitriding results from surface effects on the Si particles beginning with loss of chemisorbed H and sequential formation of thin amorphous Si nitride layers. Rapid complete conversion to Si[sub 3]N[sub 4] during the fast reaction can be inhibited when either too few or too many nuclei form on Si particels. Optimally, [approximately] 10 Si[sub 3]N[sub 4] nuclei form per Si particles under rapid, complete nitridation conditions. Nitridation during the slow reaction period appears to progress by both continued reaction of nonpreferred Si[sub 3]N[sub 4] growth interfaces and direct nitridation of the remaining Si/vapor interfaces.

  18. Identification of nitriding mechanisms in high purity reaction bonded silicon nitride

    Energy Technology Data Exchange (ETDEWEB)

    Haggerty, J.S.

    1993-03-01

    The rapid, low-temperature nitriding results from surface effects on the Si particles beginning with loss of chemisorbed H and sequential formation of thin amorphous Si nitride layers. Rapid complete conversion to Si{sub 3}N{sub 4} during the fast reaction can be inhibited when either too few or too many nuclei form on Si particels. Optimally, {approximately} 10 Si{sub 3}N{sub 4} nuclei form per Si particles under rapid, complete nitridation conditions. Nitridation during the slow reaction period appears to progress by both continued reaction of nonpreferred Si{sub 3}N{sub 4} growth interfaces and direct nitridation of the remaining Si/vapor interfaces.

  19. CRACK PROBLEM UNDER SHEAR LOADING IN CUBIC QUASICRYSTAL

    Institute of Scientific and Technical Information of China (English)

    周旺民; 范天佑; 尹姝媛

    2003-01-01

    The axisymmetric elasticity problem of cubic quasicrystal is reduced to a single higher-order partial differential equation by introducing a displacement function. Based on the work, the analytic solutions of elastic field of cubic quasicrystal with a penny-shaped crack under the shear loading are found, and the stress intensity factor and strain energy release rate are determined.

  20. Cubic Polynomials with Real or Complex Coefficients: The Full Picture

    Science.gov (United States)

    Bardell, Nicholas S.

    2016-01-01

    The cubic polynomial with real coefficients has a rich and interesting history primarily associated with the endeavours of great mathematicians like del Ferro, Tartaglia, Cardano or Vieta who sought a solution for the roots (Katz, 1998; see Chapter 12.3: The Solution of the Cubic Equation). Suffice it to say that since the times of renaissance…

  1. An application of Cubical Cohomology to Adinkras and Supersymmetry Representations

    CERN Document Server

    Doran, Charles; Landweber, Greg

    2012-01-01

    An Adinkra is a class of graphs with certain signs marking its vertices and edges, which encodes off-shell representations of the super Poincar\\'e algebra. The markings on the vertices and edges of an Adinkra are cochains for cubical cohomology. This article explores the cubical cohomology of Adinkras, treating these markings analogously to characteristic classes on smooth manifolds.

  2. Lithium absorption on single-walled boron nitride, aluminum nitride, silicon carbide and carbon nanotubes: A first-principles study

    Science.gov (United States)

    Darvish Ganji, M.; Dalirandeh, Z.; Khorasani, M.

    2016-03-01

    Using the DFT-B3LYP calculations we investigate the adsorption of Li atom on CNT, BNNT, AlNNT and SiCNT. We found that Li atom can be chemisorbed on zig-zag SiCNT with binding energy of -2.358 eV and charge transfer of 0.842 |e|, which are larger than the results of other nanotubes. The binding energy of Li on SiCNT is foun to be stronger than activation energy barrier indicating that Li metal could be well dispersed on SiCNTs. Furthermore, the average voltage caused by the lithium adsorption on SiCNT demonstrated that SiCNTs could exhibit as a stable anode similar to the lithium metal anode. The binding nature has been rationalized by analyzing the electronic structures. Our findings demonstrate that Li-BNNT, Li-SiCNT and Li-AlNNT systems exhibit spin polarized behaviors and can fascinating potential application in future spintronics. Also, Li-SiCNT system with rather small band gap might be a promising material for optical applications and active molecule in its environment.

  3. Thermal conductivity of titanium nitride/titanium aluminum nitride multilayer coatings deposited by lateral rotating cathode arc

    Energy Technology Data Exchange (ETDEWEB)

    Samani, M.K., E-mail: majid1@e.ntu.edu.sg [Novitas, Nanoelectronics Centre of Excellence, School of Electrical & Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore); Surface Technology Group, Singapore Institute of Manufacturing Technology, 71 Nanyang Drive, Singapore 638075 (Singapore); Research Group PLASMANT, Department of Chemistry, University of Antwerp, Universiteitsplein 1, B-2610 Antwerp (Belgium); Ding, X.Z. [Surface Technology Group, Singapore Institute of Manufacturing Technology, 71 Nanyang Drive, Singapore 638075 (Singapore); Khosravian, N. [Research Group PLASMANT, Department of Chemistry, University of Antwerp, Universiteitsplein 1, B-2610 Antwerp (Belgium); Amin-Ahmadi, B. [Electron Microscopy for materials Science (EMAT), Department of Physics, University of Antwerpen, Groenenborgerlan 171, B-2020 Antwerpen (Belgium); Yi, Yang [Data Storage Institute, A*STAR (Agency for Science, Technology and Research), 117608 (Singapore); Chen, G. [BC Photonics Technological Company, 5255 Woodwards Rd., Richmond, BC V7E 1G9 (Canada); Neyts, E.C.; Bogaerts, A. [Research Group PLASMANT, Department of Chemistry, University of Antwerp, Universiteitsplein 1, B-2610 Antwerp (Belgium); Tay, B.K. [Novitas, Nanoelectronics Centre of Excellence, School of Electrical & Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore)

    2015-03-02

    A series of [TiN/TiAlN]{sub n} multilayer coatings with different bilayer numbers n = 5, 10, 25, 50, and 100 were deposited on stainless steel substrate AISI 304 by a lateral rotating cathode arc technique in a flowing nitrogen atmosphere. The composition and microstructure of the coatings have been analyzed by using energy dispersive X-ray spectroscopy, X-ray diffraction (XRD), and conventional and high-resolution transmission electron microscopy (HRTEM). XRD analysis shows that the preferential orientation growth along the (111) direction is reduced in the multilayer coatings. TEM analysis reveals that the grain size of the coatings decreases with increasing bilayer number. HRTEM imaging of the multilayer coatings shows a high density misfit dislocation between the TiN and TiAlN layers. The cross-plane thermal conductivity of the coatings was measured by a pulsed photothermal reflectance technique. With increasing bilayer number, the multilayer coatings' thermal conductivity decreases gradually. This reduction of thermal conductivity can be ascribed to increased phonon scattering due to the disruption of columnar structure, reduced preferential orientation, decreased grain size of the coatings and present misfit dislocations at the interfaces. - Highlights: • TiN/TiAlN multilayer coatings with different bilayer number were deposited on SS. • The composition and microstructure of the as-deposited coatings were analyzed. • Thermal conductivity of the coatings was measured by pulsed photothermal reflectance. • Thermal conductivity depends on the coatings' microstructure and number of layers. • With increasing the bilayer number, thermal conductivity decreased.

  4. Microwave power aluminum gallium nitride/gallium nitride heterojunction field effect transistor for X-band applications

    Science.gov (United States)

    Cai, Shujun

    GaN material has been considered in recent years an attractive candidate for microwave power applications owing to its strong piezo-electric (PZ) and spontaneous polarization (SP) effects, high saturation velocity and wideband gap. AlGaN/GaN Heterojunction Field Effect Transistor (HFET) is chosen to overcome the disadvantages of low mobility in wide bandgap materials so that both high power and high speed are feasible. Analysis and simulation are performed to understand the enhancement of sheet charge density due to the PZ and SP effects in the AlGaN/GaN material system. Major factors affecting the sheet channel charge density are discussed. To verify the PZ and SP charge effects, testing structures of AlGaN/GaN with various Al contents for Hall measurement are then fabricated. Results support our analysis. GaN-based HFET devices with 25% Al content are fabricated after solving process issues. An external transconductance of 200 mS/mm, a saturation current density of 800 mA/mm and a breakdown voltage of 40 V to 50 V are achieved. A CW power amplifier with the output of 8 W at 9 GHz is achieved from a single 5 mm AlGaN/GaN HFET device. A novel process, referred to as Gamma gate process, is developed to realize high breakdown performance as well as small gate length. As a result, a 0.3 mum gate length device with an integrated field plate is fabricated using 1 mum conventional optical lithograph techniques. Improvements of breakdown voltage and RF performance by a factor of over 2 have been achieved. High temperature storage and measurement show that the AlGaN/GaN HFET devices can survive at an environment temperature as high as 592°C. The devices also survive after exposing to proton irradiation at a dosage of 1 x 1014 cm-2, indicating its intrinsic resistance to radiation.

  5. Tribological and structural properties of titanium nitride and titanium aluminum nitride coatings deposited with modulated pulsed power magnetron sputtering

    Science.gov (United States)

    Ward, Logan

    The demand for economical high-performance materials has brought attention to the development of advanced coatings. Recent advances in high power magnetron sputtering (HPPMS) have shown to improve tribological properties of coatings. These coatings offer increased wear and oxidation resistance, which may facilitate the use of more economical materials in harsh applications. This study demonstrates the use of novel forms of HPPMS, namely modulated pulsed-power magnetron sputtering (MPPMS) and deep oscillation magnetron sputtering (DOMS), for depositing TiN and Ti1-xAlxN tribological coatings on commonly used alloys, such as Ti-6Al-4V and Inconel 718. Both technologies have been shown to offer unique plasma characteristics in the physical vapor deposition (PVD) process. High power pulses lead to a high degree of ionization compared to traditional direct-current magnetron sputtering (DCMS) and pulsed magnetron sputtering (PMS). Such a high degree of ionization was previously only achievable by cathodic arc deposition (CAD); however, CAD can lead to increased macroparticles that are unfavorable in high friction and corrosive environments. MPPMS, DOMS, and other HPPMS techniques offer unique plasma characteristics and have been shown to produce coatings with refined grain structure, improved density, hardness, adhesion, and wear resistance. Using DOMS and MPPMS, TiN and Ti1-xAlxN coatings were deposited using PMS to compare microstructures and tribological performance. For Ti1-xAlxN, two sputtering target compositions, Ti 0.5Al0.5 and Ti0.3Al0.7, were used to evaluate the effects of MPPMS on the coating's composition and tribological properties. Scanning electron microscopy (SEM), transmission electron microscopy (TEM), and X-ray diffraction (XRD) were used to characterize microstructure and crystallographic texture. Several tribological properties were evaluated including: wear rate, coefficient of friction, adhesion, and nanohardness. Results show that substrate material can have a significant effect on adhesion and the mechanical response between the coating and substrate. Depending on deposition parameters and the selected material MPPMS and DOMS are promising alternatives to DCMS, PMS, and CAD.

  6. Matrix-filler interfaces and physical properties of metal matrix composites with negative thermal expansion manganese nitride

    Energy Technology Data Exchange (ETDEWEB)

    Takenaka, Koshi, E-mail: takenaka@nuap.nagoya-u.ac.jp [Department of Applied Physics, Nagoya University, Nagoya 464-8603 (Japan); Department of Crystalline Materials Science, Nagoya University, Nagoya 464-8603 (Japan); Kuzuoka, Kota [Department of Applied Physics, Nagoya University, Nagoya 464-8603 (Japan); Sugimoto, Norihiro [Department of Crystalline Materials Science, Nagoya University, Nagoya 464-8603 (Japan)

    2015-08-28

    Copper matrix composites containing antiperovskite manganese nitrides with negative thermal expansion (NTE) were formed using pulsed electric current sintering. Energy dispersive X-ray spectroscopy revealed that the chemically reacted region extends over 10 μm around the matrix–filler interfaces. The small-size filler was chemically deteriorated during formation of composites and it lost the NTE property. Therefore, we produced the composites using only the nitride particles having diameter larger than 50 μm. The large-size filler effectively suppressed the thermal expansion of copper and improved the conductivity of the composites to the level of pure aluminum. The present composites, having high thermal conductivity and low thermal expansion, are suitable for practical applications such as a heat radiation substrate for semiconductor devices.

  7. Rational Cubics and Conics Representation: A Practical Approach

    Directory of Open Access Journals (Sweden)

    M. Sarfraz

    2012-08-01

    Full Text Available A rational cubic spline, with one family of shape parameters, has been discussed with the view to its application in Computer Graphics. It incorporates both conic sections and parametric cubic curves as special cases. The parameters (weights, in the description of the spline curve can be used to modify the shape of the curve, locally and globally, at the knot intervals. The rational cubic spline attains parametric   smoothness whereas the stitching of the conic segments preserves visually reasonable smoothness at the neighboring knots. The curve scheme is interpolatory and can plot parabolic, hyperbolic, elliptic, and circular splines independently as well as bits and pieces of a rational cubic spline.Key Words: Computer Graphics, Interpolation, Spline, Conic, Rational Cubic

  8. On cubic equations over $P-$adic field

    CERN Document Server

    Mukhamedov, Farrukh; Saburov, Mansoor

    2012-01-01

    We provide a solvability criteria for a depressed cubic equation in domains $\\bz_p^{*},\\bz_p,\\bq_p$. We show that, in principal, the Cardano method is not always applicable for such equations. Moreover, the numbers of solutions of the depressed cubic equation in domains $\\bz_p^{*},\\bz_p,\\bq_p$ are provided. Since $\\bbf_p\\subset\\bq_p,$ we generalize J.-P. Serre's \\cite{JPSJ} and Z.H.Sun's \\cite{ZHS1,ZHS3} results concerning with depressed cubic equations over the finite field $\\bbf_p$. Finally, all depressed cubic equations, for which the Cardano method could be applied, are described and the $p-$adic Cardano formula is provided for those cubic equations.

  9. Aluminum microstructures on anodic alumina for aluminum wiring boards.

    Science.gov (United States)

    Jha, Himendra; Kikuchi, Tatsuya; Sakairi, Masatoshi; Takahashi, Hideaki

    2010-03-01

    The paper demonstrates simple methods for the fabrication of aluminum microstructures on the anodic oxide film of aluminum. The aluminum sheets were first engraved (patterned) either by laser beam or by embossing to form deep grooves on the surface. One side of the sheet was then anodized, blocking the other side by using polymer mask to form the anodic alumina. Because of the lower thickness at the bottom part of the grooves, the part was completely anodized before the complete oxidation of the other parts. Such selectively complete anodizing resulted in the patterns of metallic aluminum on anodic alumina. Using the technique, we fabricated microstructures such as line patterns and a simple wiring circuit-board-like structure on the anodic alumina. The aluminum microstructures fabricated by the techniques were embedded in anodic alumina/aluminum sheet, and this technique is promising for applications in electronic packaging and devices.

  10. Method of manufacture of atomically thin boron nitride

    Science.gov (United States)

    Zettl, Alexander K

    2013-08-06

    The present invention provides a method of fabricating at least one single layer hexagonal boron nitride (h-BN). In an exemplary embodiment, the method includes (1) suspending at least one multilayer boron nitride across a gap of a support structure and (2) performing a reactive ion etch upon the multilayer boron nitride to produce the single layer hexagonal boron nitride suspended across the gap of the support structure. The present invention also provides a method of fabricating single layer hexagonal boron nitride. In an exemplary embodiment, the method includes (1) providing multilayer boron nitride suspended across a gap of a support structure and (2) performing a reactive ion etch upon the multilayer boron nitride to produce the single layer hexagonal boron nitride suspended across the gap of the support structure.

  11. Aluminum Alloy 7050 Extrusions.

    Science.gov (United States)

    1977-03-01

    Artificial Aging Conditions 250 A-l Fatigue Crack Growth Data for C5A Extruded Panel, 7050-T7351X, L-T Orientation, R=0.1 254 A-2 Fatigue...cooldd aluminum and steel bottom blocks (Figure 2) were fabricated for use with this tooling. Metal was melted in a 10,000-lb capacity open- hearth ...time factor, effects of heating through this temperature range to the maximum artificial agirg temperature are additive. The solution of the

  12. The Body Center Cubic Quark Lattice Model

    CERN Document Server

    Lin Xu, Jiao

    2004-01-01

    The Standard Model while successful in many ways is incomplete; many questions remain. The origin of quark masses and hadronization of quarks are awaiting an answer. From the Dirac sea concept, we infer that two kinds of elementary quarks (u(0) and d(0)) constitute a body center cubic (BCC) quark lattice with a lattice constant a < $10^{-18}$m in the vacuum. Using energy band theory and the BCC quark lattice, we can deduce the rest masses and the intrinsic quantum numbers (I, S, C, b and Q) of quarks. With the quark spectrum, we deduce a baryon spectrum. The theoretical spectrum is in agreement well with the experimental results. Not only will this paper provide a physical basis for the Quark Model, but also it will open a door to study the more fundamental nature at distance scales <$10^{-18}$m. This paper predicts some new quarks $u_{c}$(6490) and d$_{b}$(9950), and new baryons $\\Lambda_{c}^{+}$(6500), $\\Lambda_{b}^{0}$(9960).

  13. High performance corrosion and wear resistant composite titanium nitride layers produced on the AZ91D magnesium alloy by a hybrid method

    Directory of Open Access Journals (Sweden)

    Michał Tacikowski

    2014-09-01

    Full Text Available Composite, diffusive titanium nitride layers formed on a titanium and aluminum sub-layer were produced on the AZ91D magnesium alloy. The layers were obtained using a hybrid method which combined the PVD processes with the final sealing by a hydrothermal treatment. The microstructure, resistance to corrosion, mechanical damage, and frictional wear of the layers were examined. The properties of the AZ91D alloy covered with these layers were compared with those of the untreated alloy and of some engineering materials such as 316L stainless steel, 100Cr6 bearing steel, and the AZ91D alloy subjected to commercial anodizing. It has been found that the composite diffusive nitride layer produced on the AZ91D alloy and then sealed by the hydrothermal treatment ensures the corrosion resistance comparable with that of 316L stainless steel. The layers are characterized by higher electrochemical durability which is due to the surface being overbuilt with the titanium oxides formed, as shown by the XPS examinations, from titanium nitride during the hydrothermal treatment. The composite titanium nitride layers exhibit high resistance to mechanical damage and wear, including frictional wear which is comparable with that of 100Cr6 bearing steel. The performance properties of the AZ91D magnesium alloy covered with the composite titanium nitride coating are substantially superior to those of the alloy subjected to commercial anodizing which is the dominant technique employed in industrial practice.

  14. Diffusion kinetics of nitrogen in tantalum during plasma-nitriding

    Institute of Scientific and Technical Information of China (English)

    张德元; 林勤; 曾卫军; 李放; 许兰萍; 付青峰

    2001-01-01

    The activation energies of nitrogen in tantalum on plasma nitriding conditions were calculated according to the experimental data of hardness of plasma-nitriding of tantalum vs time and temperature. The activation energy calculated is 148.873±0.390  kJ/mol. The depth increasing of nitriding layer with time follows square root relation. The nitriding process of tantalum is controlled by diffusion of nitrogen atoms in tantalum solid solution.

  15. Thermal Residual Stress in Environmental Barrier Coated Silicon Nitride - Modeled

    Science.gov (United States)

    Ali, Abdul-Aziz; Bhatt, Ramakrishna T.

    2009-01-01

    When exposed to combustion environments containing moisture both un-reinforced and fiber reinforced silicon based ceramic materials tend to undergo surface recession. To avoid surface recession environmental barrier coating systems are required. However, due to differences in the elastic and thermal properties of the substrate and the environmental barrier coating, thermal residual stresses can be generated in the coated substrate. Depending on their magnitude and nature thermal residual stresses can have significant influence on the strength and fracture behavior of coated substrates. To determine the maximum residual stresses developed during deposition of the coatings, a finite element model (FEM) was developed. Using this model, the thermal residual stresses were predicted in silicon nitride substrates coated with three environmental coating systems namely barium strontium aluminum silicate (BSAS), rare earth mono silicate (REMS) and earth mono di-silicate (REDS). A parametric study was also conducted to determine the influence of coating layer thickness and material parameters on thermal residual stress. Results indicate that z-direction stresses in all three systems are small and negligible, but maximum in-plane stresses can be significant depending on the composition of the constituent layer and the distance from the substrate. The BSAS and REDS systems show much lower thermal residual stresses than REMS system. Parametric analysis indicates that in each system, the thermal residual stresses can be decreased with decreasing the modulus and thickness of the coating.

  16. Aluminum Carbothermic Technology

    Energy Technology Data Exchange (ETDEWEB)

    Bruno, Marshall J.

    2005-03-31

    This report documents the non-proprietary research and development conducted on the Aluminum Carbothermic Technology (ACT) project from contract inception on July 01, 2000 to termination on December 31, 2004. The objectives of the program were to demonstrate the technical and economic feasibility of a new carbothermic process for producing commercial grade aluminum, designated as the ''Advanced Reactor Process'' (ARP). The scope of the program ranged from fundamental research through small scale laboratory experiments (65 kW power input) to larger scale test modules at up to 1600 kW power input. The tasks included work on four components of the process, Stages 1 and 2 of the reactor, vapor recovery and metal alloy decarbonization; development of computer models; and economic analyses of capital and operating costs. Justification for developing a new, carbothermic route to aluminum production is defined by the potential benefits in reduced energy, lower costs and more favorable environmental characteristics than the conventional Hall-Heroult process presently used by the industry. The estimated metrics for these advantages include energy rates at approximately 10 kWh/kg Al (versus over 13 kWh/kg Al for Hall-Heroult), capital costs as low as $1250 per MTY (versus 4,000 per MTY for Hall-Heroult), operating cost reductions of over 10%, and up to 37% reduction in CO2 emissions for fossil-fuel power plants. Realization of these benefits would be critical to sustaining the US aluminum industries position as a global leader in primary aluminum production. One very attractive incentive for ARP is its perceived ability to cost effectively produce metal over a range of smelter sizes, not feasible for Hall-Heroult plants which must be large, 240,000 TPY or more, to be economical. Lower capacity stand alone carbothermic smelters could be utilized to supply molten metal at fabrication facilities similar to the mini-mill concept employed by the steel industry

  17. Extracting aluminum from dross tailings

    Science.gov (United States)

    Amer, A. M.

    2002-11-01

    Aluminum dross tailings, an industrial waste, from the Egyptian Aluminium Company (Egyptalum) was used to produce two types of alums: aluminum-sulfate alum [itAl2(SO4)3.12H2O] and ammonium-aluminum alum [ (NH 4)2SO4AL2(SO4)3.24H2O]. This was carried out in two processes. The first process is leaching the impurities using diluted H2SO4 with different solid/liquid ratios at different temperatures to dissolve the impurities present in the starting material in the form of solute sulfates. The second process is the extraction of aluminum (as aluminum sulfate) from the purifi ed aluminum dross tailings thus produced. The effects of temperature, time of reaction, and acid concentration on leaching and extraction processes were studied. The product alums were analyzed using x-ray diffraction and thermal analysis techniques.

  18. Silicon nitride ceramic having high fatigue life and high toughness

    Science.gov (United States)

    Yeckley, Russell L.

    1996-01-01

    A sintered silicon nitride ceramic comprising between about 0.6 mol % and about 3.2 mol % rare earth as rare earth oxide, and between about 85 w/o and about 95 w/o beta silicon nitride grains, wherein at least about 20% of the beta silicon nitride grains have a thickness of greater than about 1 micron.

  19. [The effect of plasma nitriding on tungsten burs].

    Science.gov (United States)

    Cicciu, D; Russo, S; Grasso, C

    1989-01-01

    The authors have experimented the nitriding's effects on some cilindrical burs carbide utilized in dentistry after disamination on the applications methodics on plasma nitriding in neurosurgery, orthopedic surgery and in odontotherapy. This reacherys point out that nitriding plasma a durings increase and cutis greater capacity establish.

  20. Feasibility of Underwater Friction Stir Welding of Hardenable Alloy Steel

    Science.gov (United States)

    2010-12-01

    case, for drydocking. A single tool made of polycrystaline cubic boron nitride (PCBN) with a Tungsten -Rhenium binder was used to conduct a series of...polycrystalline cubic boron nitride (PCBN) with a Tungsten -Rhenium binder was used to conduct a series of bead-on-plate FSW traverses, approximately 64...joining of aluminum structural components in the Littoral Combat Ship (LCS) and processing of the nickel aluminum bronze used in U.S. Navy propellers. In

  1. Innovative boron nitride-doped propellants

    Directory of Open Access Journals (Sweden)

    Thelma Manning

    2016-04-01

    Full Text Available The U.S. military has a need for more powerful propellants with balanced/stoichiometric amounts of fuel and oxidants. However, balanced and more powerful propellants lead to accelerated gun barrel erosion and markedly shortened useful barrel life. Boron nitride (BN is an interesting potential additive for propellants that could reduce gun wear effects in advanced propellants (US patent pending 2015-026P. Hexagonal boron nitride is a good lubricant that can provide wear resistance and lower flame temperatures for gun barrels. Further, boron can dope steel, which drastically improves its strength and wear resistance, and can block the formation of softer carbides. A scalable synthesis method for producing boron nitride nano-particles that can be readily dispersed into propellants has been developed. Even dispersion of the nano-particles in a double-base propellant has been demonstrated using a solvent-based processing approach. Stability of a composite propellant with the BN additive was verified. In this paper, results from propellant testing of boron nitride nano-composite propellants are presented, including closed bomb and wear and erosion testing. Detailed characterization of the erosion tester substrates before and after firing was obtained by electron microscopy, inductively coupled plasma and x-ray photoelectron spectroscopy. This promising boron nitride additive shows the ability to improve gun wear and erosion resistance without any destabilizing effects to the propellant. Potential applications could include less erosive propellants in propellant ammunition for large, medium and small diameter fire arms.

  2. Nitridation of chromium powder in ammonia atmosphere

    Institute of Scientific and Technical Information of China (English)

    Ling Li; Qiang Zhen; Rong Li

    2015-01-01

    CrN powder was synthesized by nitriding Cr metal in ammonia gas flow, and its chemical reaction mechanism and nitridation process were studied. Through thermodynamic calculations, the Cr−N−O predominance diagrams were constructed for different tempera-tures. Chromium nitride formed at 700−1200°C under relatively higher nitrogen and lower oxygen partial pressures. Phases in the products were then investigated using X-ray diffraction (XRD), and the Cr2N content varied with reaction temperature and holding time. The results indicate that the Cr metal powder nitridation process can be explained by a diffusion model. Further, Cr2N formed as an intermediate product because of an incomplete reaction, which was observed by high-resolution transmission electron microscopy (HRTEM). After nitriding at 1000°C for 20 h, CrN powder with an average grain size of 63 nm was obtained, and the obtained sample was analyzed by using a scanning electron microscope (SEM).

  3. Innovative boron nitride-doped propellants

    Institute of Scientific and Technical Information of China (English)

    Thelma MANNING; Henry GRAU; Paul MATTER; Michael BEACHY; Christopher HOLT; Samuel SOPOK; Richard FIELD; Kenneth KLINGAMAN; Michael FAIR; John BOLOGNINI; Robin CROWNOVER; Carlton P. ADAM; Viral PANCHAL; Eugene ROZUMOV

    2016-01-01

    The U.S. military has a need for more powerful propellants with balanced/stoichiometric amounts of fuel and oxidants. However, balanced and more powerful propellants lead to accelerated gun barrel erosion and markedly shortened useful barrel life. Boron nitride (BN) is an interesting potential additive for propellants that could reduce gun wear effects in advanced propellants (US patent pending 2015-026P). Hexagonal boron nitride is a good lubricant that can provide wear resistance and lower flame temperatures for gun barrels. Further, boron can dope steel, which drastically improves its strength and wear resistance, and can block the formation of softer carbides. A scalable synthesis method for producing boron nitride nano-particles that can be readily dispersed into propellants has been developed. Even dispersion of the nano-particles in a double-base propellant has been demonstrated using a solvent-based processing approach. Stability of a composite propellant with the BN additive was verified. In this paper, results from propellant testing of boron nitride nano-composite propellants are presented, including closed bomb and wear and erosion testing. Detailed characterization of the erosion tester substrates before and after firing was obtained by electron microscopy, inductively coupled plasma and x-ray photoelectron spectroscopy. This promising boron nitride additive shows the ability to improve gun wear and erosion resistance without any destabilizing effects to the propellant. Potential applications could include less erosive propellants in propellant ammunition for large, medium and small diameter fire arms.

  4. Laser assisted foaming of aluminum

    Energy Technology Data Exchange (ETDEWEB)

    Kathuria, Y.P. [Laser X Co. Ltd., Aichi (Japan)

    2001-09-01

    Recently aluminum foams have evoked considerable interest as an alternative material owing to their wide range of applications ranging from microelectronics, through automobiles to aerospace industries. The manufacturing techniques and characterization methods for aluminum foams require further development to achieve effective and economical use of this material. In this communication the authors demonstrate the feasibility of unidirectional and localized expansion of the aluminum foam using the Nd-YAG/CO{sub 2} laser and powder metallurgy. (orig.)

  5. The physical properties of cubic plasma-enhanced atomic layer deposition TaN films

    Science.gov (United States)

    Kim, H.; Lavoie, C.; Copel, M.; Narayanan, V.; Park, D.-G.; Rossnagel, S. M.

    2004-05-01

    Plasma-enhanced atomic layer deposition (PE-ALD) is a promising technique to produce high quality metal and nitride thin films at low growth temperature. In this study, very thin (<10 nm) low resistivity (350 μΩ cm) cubic TaN Cu diffusion barrier were deposited by PE-ALD from TaCl5 and a plasma of both hydrogen and nitrogen. The physical properties of TaN thin films including microstructure, conformality, roughness, and thermal stability were investigated by various analytical techniques including x-ray diffraction, medium energy ion scattering, and transmission electron microscopy. The Cu diffusion barrier properties of PE-ALD TaN thin films were studied using synchrotron x-ray diffraction, optical scattering, and sheet resistance measurements during thermal annealing of the test structures. The barrier failure temperatures were obtained as a function of film thickness and compared with those of PE-ALD Ta, physical vapor deposition (PVD) Ta, and PVD TaN. A diffusion kinetics analysis showed that the microstructure of the barrier materials is one of the most critical factors for Cu diffusion barrier performance.

  6. Single gallium nitride nanowire lasers.

    Science.gov (United States)

    Johnson, Justin C; Choi, Heon-Jin; Knutsen, Kelly P; Schaller, Richard D; Yang, Peidong; Saykally, Richard J

    2002-10-01

    There is much current interest in the optical properties of semiconductor nanowires, because the cylindrical geometry and strong two-dimensional confinement of electrons, holes and photons make them particularly attractive as potential building blocks for nanoscale electronics and optoelectronic devices, including lasersand nonlinear optical frequency converters. Gallium nitride (GaN) is a wide-bandgap semiconductor of much practical interest, because it is widely used in electrically pumped ultraviolet-blue light-emitting diodes, lasers and photodetectors. Recent progress in microfabrication techniques has allowed stimulated emission to be observed from a variety of GaN microstructures and films. Here we report the observation of ultraviolet-blue laser action in single monocrystalline GaN nanowires, using both near-field and far-field optical microscopy to characterize the waveguide mode structure and spectral properties of the radiation at room temperature. The optical microscope images reveal radiation patterns that correlate with axial Fabry-Perot modes (Q approximately 10(3)) observed in the laser spectrum, which result from the cylindrical cavity geometry of the monocrystalline nanowires. A redshift that is strongly dependent on pump power (45 meV microJ x cm(-2)) supports the idea that the electron-hole plasma mechanism is primarily responsible for the gain at room temperature. This study is a considerable advance towards the realization of electron-injected, nanowire-based ultraviolet-blue coherent light sources.

  7. Nonlinear conductivity in silicon nitride

    Science.gov (United States)

    Tuncer, Enis

    2017-08-01

    To better comprehend electrical silicon-package interaction in high voltage applications requires full characterization of the electrical properties of dielectric materials employed in wafer and package level design. Not only the packaging but wafer level dielectrics, i.e. passivation layers, would experience high electric fields generated by the voltage applied pads. In addition the interface between the passivation layer and a mold compound might develop space charge because of the mismatch in electrical properties of the materials. In this contribution electrical properties of a thin silicon nitride (Si3N4) dielectric is reported as a function of temperature and electric field. The measured values later analyzed using different temperature dependent exponential expressions and found that the Mott variable range hopping conduction model was successful to express the data. A full temperature/electric field dependency of conductivity is generated. It was found that the conduction in Si3N4 could be expressed like a field ionization or Fowler-Nordheim mechanism.

  8. Formation and control of stoichiometric hafnium nitride thin films by direct sputtering of hafnium nitride target

    CERN Document Server

    Gotoh, Y; Ishikawa, J; Liao, M Y

    2003-01-01

    Hafnium nitride thin films were prepared by radio-frequency sputter deposition with a hafnium nitride target. Deposition was performed with various rf powers, argon pressures, and substrate temperatures, in order to investigate the influences of these parameters on the film properties, particularly the nitrogen composition. It was found that stoichiometric hafnium nitride films were formed at an argon gas pressure of less than 2 Pa, irrespective of the other deposition parameters within the range investigated. Maintaining the nitrogen composition almost stoichiometric, orientation, stress, and electrical resistivity of the films could be controlled with deposition parameters. (author)

  9. Cubic B-spline curve approximation by curve unclamping

    OpenAIRE

    Chen, Xiao-Diao; Ma, Weiyin; Paul, Jean-Claude

    2010-01-01

    International audience; A new approach for cubic B-spline curve approximation is presented. The method produces an approximation cubic B-spline curve tangent to a given curve at a set of selected positions, called tangent points, in a piecewise manner starting from a seed segment. A heuristic method is provided to select the tangent points. The first segment of the approximation cubic B-spline curve can be obtained using an inner point interpolation method, least-squares method or geometric H...

  10. On q-power cycles in cubic graphs

    DEFF Research Database (Denmark)

    Bensmail, Julien

    2017-01-01

    In the context of a conjecture of Erdos and Gyárfás, we consider, for any q ≥ 2, the existence of q-power cycles (i.e. with length a power of q) in cubic graphs. We exhibit constructions showing that, for every q ≥ 3, there exist arbitrarily large cubic graphs with no q-power cycles. Concerning...... the remaining case q = 2 (which corresponds to the conjecture of Erdos and Gyárfás), we show that there exist arbitrarily large cubic graphs whose only 2-power cycles have length 4 only, or 8 only....

  11. On q-power cycles in cubic graphs

    DEFF Research Database (Denmark)

    Bensmail, Julien

    2016-01-01

    In the context of a conjecture of Erdos and Gyárfás, we consider, for any q ≥ 2, the existence of q-power cycles (i.e. with length a power of q) in cubic graphs. We exhibit constructions showing that, for every q ≥ 3, there exist arbitrarily large cubic graphs with no q-power cycles. Concerning...... the remaining case q = 2 (which corresponds to the conjecture of Erdos and Gyárfás), we show that there exist arbitrarily large cubic graphs whose only 2-power cycles have length 4 only, or 8 only....

  12. The compressibility of cubic white and orthorhombic, rhombohedral, and simple cubic black phosphorus

    Energy Technology Data Exchange (ETDEWEB)

    Clark, Simon M; Zaug, Joseph

    2010-03-10

    The effect of pressure on the crystal structure of white phosphorus has been studied up to 22.4 GPa. The ?alpha phase was found to transform into the alpha' phase at 0.87 +- 0.04 GPa with a volume change of 0.1 +- 0.3 cc/mol. A fit of a second order Birch- Murnaghan equation to the data gave Vo = 16.94 ? 0.08 cc/mol and Ko = 6.7 +- 0.5 GPa for the alpha phase and Vo = 16.4 +- 0.1 cc/mol and Ko = 9.1 +- 0.3 GPa for the alpha' phase. The alpha' phase was found to transform to the A17 phase of black phosphorus at 2.68 +- 0.34 GPa and then with increasing pressure to the A7 and then simple cubic phase of black phosphorus. A fit of a second order Birch-Murnaghan equation to our data combined with previous measurements gave Vo = 11.43 +- 0.05 cc/mol and Ko = 34.7 +- 0.5 GPa for the A17 phase, Vo = 9.62 +- 0.01 cc/mol and Ko = 65.0 +- 0.6 GPa for the A7 phase and , Vo = 9.23 +- 0.01 cc/mol and Ko = 72.5 +- 0.3 GPa for the simple cubic phase.

  13. Nitride Fuel Development at the INL

    Energy Technology Data Exchange (ETDEWEB)

    W.E. Windes

    2007-06-01

    A new method for fabricating nitride-based fuels for nuclear applications is under development at the Idaho National Laboratory (INL). A primary objective of this research is the development of a process that could be operated as an automated or semi-automated technique reducing costs, worker doses, and eventually improving the final product form. To achieve these goals the fabrication process utilizes a new cryo-forming technique to produce microspheres formed from sub-micron oxide powder to improve material handling issues, yield rapid kinetics for conversion to nitrides, and reduced material impurity levels within the nitride compounds. The microspheres are converted to a nitride form within a high temperature particle fluidizing bed using a carbothermic process that utilizes a hydrocarbon – hydrogen - nitrogen gas mixture. A new monitor and control system using differential pressure changes in the fluidizing gas allows for real-time monitoring and control of the spouted bed reactor during conversion. This monitor and control system can provide real-time data that is used to control the gas flow rates, temperatures, and gas composition to optimize the fluidization of the particle bed. The small size (0.5 µm) of the oxide powders in the microspheres dramatically increases the kinetics of the conversion process yielding reduced process times and temperatures. Initial studies using surrogate ZrO2 powder have yielded conversion efficiencies of 90 -95 % nitride formation with only small levels of oxide and carbide contaminants present. Further studies are being conducted to determine optimal gas mixture ratios, process time, and temperature range for providing complete conversion to a nitride form.

  14. Microbial adherence to a nonprecious alloy after plasma nitriding process.

    Science.gov (United States)

    Sonugelen, Mehmet; Destan, Uhmut Iyiyapici; Lambrecht, Fatma Yurt; Oztürk, Berran; Karadeniz, Süleyman

    2006-01-01

    To investigate the microbial adherence to the surfaces of a nonprecious metal alloy after plasma nitriding. The plasma-nitriding process was performed to the surfaces of metals prepared from a nickel-chromium alloy. The microorganisms were labeled with technetium-99m. After the labeling procedure, 60 metal disks were treated with a microorganism for each use. The results revealed that the amount of adherence of all microorganisms on surfaces was changed by plasma-nitriding process; adherence decreased substantially (P plasma nitriding time were not significant (P> .05) With the plasma-nitriding process, the surface properties of nonprecious metal alloys can be changed, leading to decreased microbial adherence.

  15. Dynamic Property of Aluminum Foam

    Directory of Open Access Journals (Sweden)

    S Irie

    2016-09-01

    Full Text Available Aluminum in the foam of metallic foam is in the early stage of industrialization. It has various beneficial characteristics such as being lightweight, heat resistance, and an electromagnetic radiation shield. Therefore, the use of aluminum foam is expected to reduce the weight of equipment for transportation such as the car, trains, and aircraft. The use as energy absorption material is examined. Moreover aluminum foam can absorb the shock wave, and decrease the shock of the blast. Many researchers have reported about aluminum foam, but only a little information is available for high strain rates (103 s-1 or more. Therefore, the aluminum foam at high strain rates hasn't been not characterized yet. The purpose in this research is to evaluate the behavior of the aluminum form in the high-strain rate. In this paper, the collision test on high strain rate of the aluminum foam is investigated. After experiment, the numerical analysis model will be made. In this experiment, a powder gun was used to generate the high strain rate in aluminum foam. In-situ PVDF gauges were used for measuring pressure and the length of effectiveness that acts on the aluminum foam. The aluminum foam was accelerated to about 400 m/s from deflagration of single component powder and the foam were made to collide with the PVDF gauge. The high strain rate deformation of the aluminum form was measured at two collision speeds. As for the result, pressure was observed to go up rapidly when about 70% was compressed. From this result, it is understood that complete crush of the cell is caused when the relative volume is about 70%. In the next stage, this data will be compared with the numerical analysis.

  16. Reactive DC magnetron sputtered zirconium nitride (ZrN) thin film and its characterization

    Science.gov (United States)

    Subramanian, B.; Ashok, K.; Sanjeeviraja, C.; Kuppusami, P.; Jayachandran, M.

    2008-05-01

    Zirconium nitride (ZrN) thin films were prepared by using reactive direct current (DC) magnetron sputtering onto different substrates. A good polycrystalline nature with face centered cubic structure was observed from X-ray Diffraction for ZrN thin films. The observed 'd' values from the X-ray Diffraction pattern were found to be in good agreement with the standard 'd' values (JCPDS-89-5269). An emission peak is observed at 587nm from Photoluminescence studies for the excitation at 430nm. The resistivity value (ρ) of 2.1798 (μΩ cm) was observed. ZrN has high wear resistance and low coefficient of friction. A less negative value of Ecorr and lower value of Icorr observed for ZrN / Mild Steel (MS) clearly confirm the better corrosion resistance than the bare substrate. Also the higher Rct value and lower Cdl value was observed for ZrN / MS from Nyquist - plot.

  17. Pulsed laser ablation of zinc selenide in nitrogen ambience: Formation of zinc nitride films

    Science.gov (United States)

    Simi, S.; Navas, I.; Vinodkumar, R.; Chalana, S. R.; Gangrade, Mohan; Ganesan, V.; Pillai, V. P. Mahadevan

    2011-09-01

    Zinc nitride (Zn 3N 2) thin films are prepared using pulsed laser deposition (PLD) from zinc selenide (ZnSe) target at different nitrogen ambient pressures viz. 1, 3, 5, 7 and 10 Pa. The films prepared with nitrogen pressures 1 and 3 Pa are amorphous in nature, whereas the films prepared at 5, 7 and 10 Pa exhibit the presence of cubic bixbyite Zn 3N 2 structure with lattice parameter very close to bulk of Zn 3N 2. The particle size calculated by Debye Scherrer's formula is in the nano regime. Surface morphology of the films is studied by SEM and AFM analysis. Optical parameters such as band gap, refractive index and porosity of the films are calculated. Moreover, the present study confers an outlook about how do various factors such as substrate temperature, reactive supplementing gas and laser-target interaction influence the film developing process during pulsed lased deposition.

  18. Neurofibrillary pathology and aluminum in Alzheimer's disease

    OpenAIRE

    Shin, R. W.; Lee, V.M.Y.; Trojanowski, J.Q.

    1995-01-01

    Since the first reports of aluminum-induced neurofibrillary degeneration in experimental animals, extensive studies have been performed to clarify the role played by aluminum in the pathogenesis of Alzheimer's disease (AD). Additional evidence implicating aluminum in AD includes elevated levels of aluminum in the AD brain, epidemiological data linking aluminum exposure to AD, and interactions between aluminum and protein components in the pathological lesions o...

  19. Local heating with titanium nitride nanoparticles

    DEFF Research Database (Denmark)

    Guler, Urcan; Ndukaife, Justus C.; Naik, Gururaj V.;

    2013-01-01

    We investigate the feasibility of titanium nitride (TiN) nanoparticles as local heat sources in the near infrared region, focusing on biological window. Experiments and simulations provide promising results for TiN, which is known to be bio-compatible.......We investigate the feasibility of titanium nitride (TiN) nanoparticles as local heat sources in the near infrared region, focusing on biological window. Experiments and simulations provide promising results for TiN, which is known to be bio-compatible....

  20. Alkaline Capacitors Based on Nitride Nanoparticles

    Science.gov (United States)

    Aldissi, Matt

    2003-01-01

    High-energy-density alkaline electrochemical capacitors based on electrodes made of transition-metal nitride nanoparticles are undergoing development. Transition- metal nitrides (in particular, Fe3N and TiN) offer a desirable combination of high electrical conductivity and electrochemical stability in aqueous alkaline electrolytes like KOH. The high energy densities of these capacitors are attributable mainly to their high capacitance densities, which, in turn, are attributable mainly to the large specific surface areas of the electrode nanoparticles. Capacitors of this type could be useful as energy-storage components in such diverse equipment as digital communication systems, implanted medical devices, computers, portable consumer electronic devices, and electric vehicles.