Shape memory effect and microstructures of sputter-deposited Cu-Al-Ni films

International Nuclear Information System (INIS)

Minemura, T.; Andoh, H.; Kita, Y.; Ikuta, I.

1985-01-01

The shape memory effect has been found in many alloy systems which exhibit a thermoelastic martensite transformation. Cu-Al-Ni alloys exhibit an excellent shape memory effect in single crystalline states, but they have not yet been commercially used due to their brittle fracture along the grain boundaries in polycrystalline states. This letter reports the shape memory effect and microstructures of the sputter-deposited Cu-Al-Ni films. Cu-14%Al-4%Ni alloy ingot was prepared. A target for sputter deposition was cut from the ingot. Aluminium foils (20 μm thick) were used for the substrates of sputter deposition. The microstructures and crystal structures of the films were investigated by transmission electron microscopy (TEM) and X-ray diffraction using CuKα radiation, respectively. The effect of the sputtering conditions such as substrate temperature, partial pressure of argon gas, and the sputtering power on the structures of sputter-deposited Cu-14%Al-4%Ni films were investigated by X-ray diffraction. Results are shown and discussed. Photographs demonstrate shape memory behaviour of Cu-14%Al-4%Ni films sputter-deposited on aluminium foils from (a) liquid nitrogen temperature to (d) room temperature. (author)

Deuterium absorption in Mg{sub 70}Al{sub 30} thin films with bilayer catalysts: A comparative neutron reflectometry study

Energy Technology Data Exchange (ETDEWEB)

Poirier, Eric [National Research Council Canada/Canadian Neutron Beam Centre, Bldg. 459, Chalk River Laboratories, Chalk River, ON, K0J 1J0 (Canada); Harrower, Chris T.; Kalisvaart, Peter [Chemical and Materials Engineering, University of Alberta and National Research Council Canada/National Institute for Nanotechnology, Edmonton, AB, T6G 2M9 (Canada); Bird, Adam [National Research Council Canada/Canadian Neutron Beam Centre, Bldg. 459, Chalk River Laboratories, Chalk River, ON, K0J 1J0 (Canada); Teichert, Anke [Helmholtz Zentrum Berlin, Hahn-Meitner-Platz 1, 14109 Berlin (Germany); Instituut voor Kern-en Stralingsfysica and INPAC, K.U. Leuven, Celestijnenlaan 200D, B-3001 Leuven (Belgium); Laboratorium voor Vaste-Stoffysica en Magnetisme and INPAC, K.U. Leuven, Celestijnenlaan 200D, B-3001 Leuven (Belgium); Wallacher, Dirk; Grimm, Nico; Steitz, Roland [Helmholtz Zentrum Berlin, Hahn-Meitner-Platz 1, 14109 Berlin (Germany); Mitlin, David [Chemical and Materials Engineering, University of Alberta and National Research Council Canada/National Institute for Nanotechnology, Edmonton, AB, T6G 2M9 (Canada); Fritzsche, Helmut, E-mail: Helmut.Fritzsche@nrc-cnrc.gc.ca [National Research Council Canada/Canadian Neutron Beam Centre, Bldg. 459, Chalk River Laboratories, Chalk River, ON, K0J 1J0 (Canada)

2011-05-05

Highlights: > Mg{sub 70}Al{sub 30} thin films studied for hydrogen absorption using in situ neutron reflectometry. > Films with Ta/Pd, Ti/Pd and Ni/Pd bilayer catalysts systematically compared. > Measurements reveals deuterium spillover from the catalysts to the MgAl phase. > The use of Ti-Pd bilayer offers best results in terms of amount absorbed and kinetics. > Key results cross-checked with X-ray reflectometry. - Abstract: We present a neutron reflectometry study of deuterium absorption in thin films of Al-containing Mg alloys capped with a Ta/Pd, Ni/Pd and Ti/Pd-catalyst bilayer. The measurements were performed at room temperature over the 0-1 bar pressure range under quasi-equilibrium conditions. The modeling of the measurements provided a nanoscale representation of the deuterium profile in the layers at different stages of the absorption process. The absorption mechanism observed was found to involve spillover of atomic deuterium from the catalyst layer to the Mg alloy phase, followed by the deuteration of the Mg alloy. Complete deuteration of the Mg alloy occurs in a pressure range between 100 and 500 mbar, dependent on the type of bilayer catalyst. The use of a Ti/Pd bilayer catalyst yielded the best results in terms of both storage density and kinetic properties.

Cu-Si bilayers as storage medium in optical recording

International Nuclear Information System (INIS)

Kuiper, A.E. T.; Vullers, R.J.M.; Pasquariello, D.; Naburgh, E.P.

2005-01-01

Instead of a phase change or a dye layer, a Cu/Si bilayer can be applied as the recording medium in a write-once Blu-ray Disc. The write process basically comprises the formation of a CuSi alloy containing 25-30 at. % Si, while any excess of Si is left behind as unreacted film. Auger analyses of the laser-written layers indicate that recording consists primarily of the diffusion of Si into Cu. The data allow for discrimination between the various models presented in literature for Cu/Si-based recording and to optimize the stack. Very low jitter levels of typically 4% proved to be achievable with equally thick films of Cu and Si as recording medium

Microfabrication of SrRuO3 thin films on various oxide substrates using LaAlO3/BaOx sacrificial bilayers

Science.gov (United States)

Harada, Takayuki; Tsukazaki, Atsushi

2018-02-01

Oxides provide various fascinating physical properties that could find use in future device applications. However, the physical properties of oxides are often affected by formation of oxygen vacancies during device fabrication processes. In this study, to develop a damage-free patterning process for oxides, we focus on a lift-off process using a sacrificial template layer, by which we can pattern oxide thin films without severe chemical treatment or plasma bombardment. As oxides need high thin-film growth temperature, a sacrificial template needs to be made of thermally stable and easily etchable materials. To meet these requirements, we develop a sacrificial template with a carefully designed bilayer structure. Combining a thermally and chemically stable LaAlO3 and a water-soluble BaOx, we fabricated a LaAlO3/BaOx sacrificial bilayer. The patterned LaAlO3/BaOx sacrificial bilayers were prepared on oxide substrates by room-temperature pulsed laser deposition and standard photolithography process. The structure of the sacrificial bilayer can be maintained even in rather tough conditions needed for oxide thin film growth: several hundred degrees Celsius under high oxygen pressure. Indeed, the LaAlO3/BaOx bilayer is easily removable by sonication in water. We applied the lift-off method using the LaAlO3/BaOx sacrificial bilayer to a representative oxide conductor SrRuO3 and fabricated micron-scale Hall-bar devices. The SrRuO3 channels with the narrowest line width of 5 μm exhibit an almost identical transport property to that of the pristine film, evidencing that the developed process is beneficial for patterning oxides. We show that the LaAlO3/BaOx lift-off process is applicable to various oxide substrates: SrTiO3, MgO, and Al2O3. The new versatile patterning process will expand the range of application of oxide thin films in electronic and photonic devices.

Microstructure and mechanical behavior of a shape memory Ni-Ti bi-layer thin film

Energy Technology Data Exchange (ETDEWEB)

Mohri, Maryam [School of Metallurgy and Materials Engineering, College of Engineering, University of Tehran, Tehran (Iran, Islamic Republic of); Karlsruhe Institute of Technology, Institute of Nanotechnology, 76021 Karlsruhe (Germany); Nili-Ahmadabadi, Mahmoud, E-mail: nili@ut.ac.ir [School of Metallurgy and Materials Engineering, College of Engineering, University of Tehran, Tehran (Iran, Islamic Republic of); Center of Excellence for High Performance Materials, University of Tehran, Tehran (Iran, Islamic Republic of); Ivanisenko, Julia [Karlsruhe Institute of Technology, Institute of Nanotechnology, 76021 Karlsruhe (Germany); Schwaiger, Ruth [Karlsruhe Institute of Technology, Institute for Applied Materials, 76021 Karlsruhe (Germany); Hahn, Horst; Chakravadhanula, Venkata Sai Kiran [Karlsruhe Institute of Technology, Institute of Nanotechnology, 76021 Karlsruhe (Germany)

2015-05-29

Two different single-layers and a bi-layer Ni-Ti thin films with chemical compositions of Ni{sub 45}Ti{sub 50}Cu{sub 5}, Ni{sub 50.8}Ti{sub 49.2} and Ni{sub 50.8}Ti{sub 49.2}/Ni{sub 45}Ti{sub 50}Cu{sub 5} (numbers indicate at.%) determined by energy dispersive X-ray spectroscopy were deposited on Si (111) substrates using DC magnetron sputtering. The structures, surface morphology and transformation temperatures of annealed thin films at 500 °C for 15 min and 1 h were studied using grazing incidence X-ray diffraction, transmission electron microscopy (TEM), atomic force microscopy and differential scanning calorimetry (DSC), respectively. Nanoindentation was used to characterize the mechanical properties. The DSC and X-ray diffraction results indicated the austenitic structure of the Ni{sub 50.8}Ti{sub 49.2} and martensitic structure of the Ni{sub 45}Ti{sub 50}Cu{sub 5} thin films while the bi-layer was composed of austenitic and martensitic thin films. TEM study revealed that copper encourages crystallization in the bi-layer such that crystal structure containing nano-precipitates in the Ni{sub 45}Ti{sub 50}Cu{sub 5} layer was detected after 15 min annealing while the Ni{sub 50.8}Ti{sub 49.2} layer crystallized after 60 min at 500 °C. Furthermore, after annealing at 500 °C for 15 min, a precipitate free zone and thin layer amorphous were observed closely to the interface in the top layer. The bi-layer was completely crystallized at 500 °C for 1 h and the orientation of the Ni-rich precipitates indicated a stress gradient in the bi-layer. The bi-layer thin film showed different transformation temperatures and mechanical behavior from the single-layers. The developed bi-layer has different phase transformation temperatures, the higher temperatures of shape memory effect and lower temperature of pseudo-elastic behavior compared to the single-layers. Also, the bi-layer thin film exhibited a combined pseudo-elastic behavior and shape memory effect with a reduced

Study on the enhanced and stable field emission behavior of a novel electrosprayed Al-doped ZnO bilayer film

KAUST Repository

Mahmood, Khalid; Munir, Rahim; Swain, Bhabani Sankar; Han, Gill Sang; Kim, Byeong Jo; Jung, Hyun Suk

2014-01-01

A novel electrosprayed bilayer film composed of an over-layer (L 2) of aluminium-doped ZnO (AZO) nanoflakes (NF-AZO) and a under-layer (L1) of AZO nanocrystallites structure (NC-AZO) named BL:NF/NC-AZO is studied as an excellent field-emitter. The XRD pattern demonstrated that the doped bilayer film has preferential growth along the c-axis with hexagonal wurtzite structure and the (0 0 2) peak shifted toward the larger angle side after doping. The lowest turn-on field of ∼2.8 V μm-1, highest emission current density of 1.95 mA cm-2 is obtained for BL:NF/NC-AZO under the field of 6.8 V μm-1 and as well as the highest field enhancement factor (β) is estimated to be 4370 ± 3, compared to pure ZnO bilayer film (BL:NF/NC-ZnO) and also better than NC-AZO film and possesses the excellent long term stability of emission current. The PL intensity of doped ZnO bilayer film is very much stronger than pure ZnO bilayer structure. The superior field emission properties are attributed to the better morphologies, Al-doping and better crystallinity of bilayer AZO films. © 2014 The Royal Society of Chemistry.

Synthesis and microstructural studies of annealed Cu(2)O/Cu(x)S bilayer as transparent electrode material for photovoltaic and energy storage devices.

Science.gov (United States)

Taleatu, B A; Arbab, E A A; Omotoso, E; Mola, G T

2014-10-01

Cu2 O thin film and a transparent bilayer have been fabricated by electrodeposition method. The growths were obtained in potentiostatic mode with gradual degradation of anodic current. X-ray diffraction (XRD) study showed that the bilayer is polycrystalline and it possesses mixture of different crystallite phases of copper oxides. Surface morphology of the films was investigated by scanning electron microscopy (SEM). The SEM images revealed that the films were uniformly distributed and the starting material (Cu2 O) had cubical structure. Grains agglomeration and crystallinity were enhanced by annealing. Optical studies indicated that all the samples have direct allowed transition. Energy band gap of the bilayer film was reduced by annealing treatment thus corroborating quantum confinement upshot. © 2014 The Authors Journal of Microscopy © 2014 Royal Microscopical Society.

Catalytic effect of Al and AlN interlayer on the growth and properties of containing carbon films

International Nuclear Information System (INIS)

Zhou, Bing; Liu, Zhubo; Tang, Bin; Rogachev, A.V.

2015-01-01

Highlights: • DLC and CN x bilayers with Al (AlN) interlayer were fabricated by cathode arc technique. • Complete diffusion of Al and C atoms occurs at the interface of Al/DLC (CN x ) bilayer. • Al/CN x bilayer presents a higher content of Csp 3 /Csp 2 bonds. • The hardness of Al/DLC bilayer decreases but increases for the other bilayers. • Morphology of the bilayers was explained by growth mechanism of DLC and surface state of substrate. - Abstract: Diamond-like carbon (DLC) and carbon nitride (CN x ) bilayer films with Al and AlN interlayer were fabricated by pulse cathode arc technique. The structure, composition, morphology and mechanical properties of the films were investigated by Raman, Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), Knoop sclerometer and surface profilometer. The results indicated that the complete diffusion between C and Al atoms occurs in the Al/DLC and Al/CN x bilayer. Al interlayer induces the increase of the size and ordering of Csp 2 clusters in the films but AlN interlayer increases the disordering degree of Csp 2 clusters. XPS results showed that a higher content of Csp 3 /Csp 2 bonds presents in the Al/CN x bilayer, and Al and AlN interlayer decreases the atomic ratio of N/C. AFM with phase contrast mode illustrated the morphologic characteristics of the bilayer films. All the bilayers show a nano-structural surface. The morphology changes of the bilayer were well explained by the surface state of the substrate and the growth mechanism of DLC films. The hardness of Al/DLC bilayer decreases but it increases for the other bilayers compared to the corresponding DLC (CN x ) monolayer. The internal stress of the bilayer is significantly lower than that of the monolayer except for the AlN/CN x bilayer. These studies could make the difference at the time of choosing a suitable functional film for certain application

Stress evolution during and after sputter deposition of thin Cu Al alloy films

Science.gov (United States)

Pletea, M.; Wendrock, H.; Kaltofen, R.; Schmidt, O. G.; Koch, R.

2008-06-01

The stress evolution during and after sputter deposition of thin Cu-Al alloy films containing 1 and 2 at.% Al onto oxidized Si(100) substrates has been studied up to thicknesses of 300 nm by means of in situ substrate curvature measurements. In order to correlate stress and morphology, the microstructure was investigated by focused ion beam microscopy, scanning electron microscopy, and atomic force microscopy. The evolution of the stress and microstructure of the Cu-Al alloy films is similar to that for sputtered pure Cu films. Film growth proceeds in the Volmer-Weber mode, typical for high mobility metals. It is characterized by nucleation, island, percolation, and channel stages before the films become continuous, as well as lateral grain growth in the compact films. With increasing Al content the overall atom mobility and, thus, the average grain size of the alloy films are reduced. Increase of the sputter pressure from 0.5 to 2 Pa leads to films with larger grain size, rougher surface morphology and higher electrical resistivity.

FABRICATION OF Cu-Al-Ni SHAPE MEMORY THIN FILM BY THERMAL EVOPRATION

OpenAIRE

Özkul, İskender; Canbay, Canan Aksu; Tekataş, Ayşe

2017-01-01

Among the functional, materials shape memory alloysare important because of their unique properties. So, these materials haveattracted more attention to be used in micro/nano electronic andelectromechanic systems. In this work, thermal evaporation method has been usedto produce CuAlNi shape memory alloy thin film. The produced CuAlNi thin filmhas been characterized and the presence of the martensite phase wasinvestigated and compared with the CuAlNi alloy sample. CuAlNi shape memoryalloy thin...

Improvement of pentathiophene/fullerene planar heterojunction photovoltaic cells by improving the organic films morphology through the anode buffer bilayer

Science.gov (United States)

El Jouad, Zouhair; Cattin, Linda; Martinez, Francisco; Neculqueo, Gloria; Louarn, Guy; Addou, Mohammed; Predeep, Padmanabhan; Manuvel, Jayan; Bernède, Jean-Christian

2016-05-01

Organic photovoltaic cells (OPVCs) are based on a heterojunction electron donor (ED)/electron acceptor (EA). In the present work, the electron donor which is also the absorber of light is pentathiophene. The typical cells were ITO/HTL/pentathiophene/fullerene/Alq3/Al with HTL (hole transport layer) = MoO3, CuI, MoO3/CuI. After optimisation of the pentathiophene thickness, 70 nm, the highest efficiency, 0.81%, is obtained with the bilayer MoO3/CuI as HTL. In order to understand these results the pentathiophene films deposited onto the different HTLs were characterized by scanning electron microscopy, atomic force microscopy, X-rays diffraction, optical absorption and electrical characterization. It is shown that CuI improves the conductivity of the pentathiophene layer through the modification of the film structure, while MoO3 decreases the leakage current. Using the bilayer MoO3/CuI allows cumulating the advantages of each layer. Contribution to the topical issue "Materials for Energy Harvesting, Conversion and Storage (ICOME 2015) - Elected submissions", edited by Jean-Michel Nunzi, Rachid Bennacer and Mohammed El Ganaoui

A dilute Cu(Ni) alloy for synthesis of large-area Bernal stacked bilayer graphene using atmospheric pressure chemical vapour deposition

Energy Technology Data Exchange (ETDEWEB)

Madito, M. J.; Bello, A.; Dangbegnon, J. K.; Momodu, D. Y.; Masikhwa, T. M.; Barzegar, F.; Manyala, N., E-mail: ncholu.manyala@up.ac.za [Department of Physics, Institute of Applied Materials, SARCHI Chair in Carbon Technology and Materials, University of Pretoria, Pretoria 0028 (South Africa); Oliphant, C. J.; Jordaan, W. A. [National Metrology Institute of South Africa, Private Bag X34, Lynwood Ridge, Pretoria 0040 (South Africa); Fabiane, M. [Department of Physics, Institute of Applied Materials, SARCHI Chair in Carbon Technology and Materials, University of Pretoria, Pretoria 0028 (South Africa); Department of Physics, National University of Lesotho, P.O. Roma 180 (Lesotho)

2016-01-07

A bilayer graphene film obtained on copper (Cu) foil is known to have a significant fraction of non-Bernal (AB) stacking and on copper/nickel (Cu/Ni) thin films is known to grow over a large-area with AB stacking. In this study, annealed Cu foils for graphene growth were doped with small concentrations of Ni to obtain dilute Cu(Ni) alloys in which the hydrocarbon decomposition rate of Cu will be enhanced by Ni during synthesis of large-area AB-stacked bilayer graphene using atmospheric pressure chemical vapour deposition. The Ni doped concentration and the Ni homogeneous distribution in Cu foil were confirmed with inductively coupled plasma optical emission spectrometry and proton-induced X-ray emission. An electron backscatter diffraction map showed that Cu foils have a single (001) surface orientation which leads to a uniform growth rate on Cu surface in early stages of graphene growth and also leads to a uniform Ni surface concentration distribution through segregation kinetics. The increase in Ni surface concentration in foils was investigated with time-of-flight secondary ion mass spectrometry. The quality of graphene, the number of graphene layers, and the layers stacking order in synthesized bilayer graphene films were confirmed by Raman and electron diffraction measurements. A four point probe station was used to measure the sheet resistance of graphene films. As compared to Cu foil, the prepared dilute Cu(Ni) alloy demonstrated the good capability of growing large-area AB-stacked bilayer graphene film by increasing Ni content in Cu surface layer.

Diffusion-induced grain boundary migration during ion beam mixing of Au/Cu bilayers

International Nuclear Information System (INIS)

Alexander, D.E.; Baldo, P.M.; Rehn, L.E.

1992-09-01

Experiments were performed to evaluate the effect of 1.5 MeV Kr irradiation on diffusion-induced grain boundary migration (DIGM) in Au/Cu bilayers in the temperature range of 300≤T≤050K. The experimental results were consistent with DIGM occurring in bilayers both during irradiation and during annealing treatments. Rutherford backscattering spectrometry showed a nearly uniform distribution of Cu present through the entire thickness of appropriately prepared polycrystalline Au films irradiated or annealed at temperatures ≥400K. No parallel effect was seen in similarly treated single-crystal films. In each polycrystalline sample studied, irradiation resulted in greater amounts of Cu present uniformly in the Au compared to annealing-only. The magnitudes of measured Cu compositions were substantially greater than that expected solely from grain boundary diffusion. A simple analysis of the process indicated that ion irradiation affects DIGM by increasing the composition of Cu present in alloyed zones and/or by increasing the grain boundary velocity in the Au

Porous anodic film formation on an Al-3.5 wt% Cu alloy

Energy Technology Data Exchange (ETDEWEB)

Paez, M.A.; Bustos, O.; Thompson, G.E.; Skeldon, P.; Shimizu, K.; Wood, G.C.

2000-03-01

Anodic film growth has been undertaken on an electropolished Al-3.5 wt % Cu alloy to determine the influence of copper in solid solution on the anodizing behavior. At the commencement of anodizing of the electropolished alloy, in the presence of interfacial enrichment of copper, Al{sup 3+} and Cu{sup 2+} ions egress and O{sup 2{minus}} ion ingress proceed; film growth occurs at the alloy/film interface though O{sup 2{minus}} ion ingress, with outwardly mobile Al{sup 3+} and Cu{sup 2+} ions ejected at the film/electrolyte interface, and field-assisted dissolution proceeding at the bases of pores. Oxidation of copper, in the presence of the enriched layer, is also associated with O{sub 2} gas generation, leading to development of oxygen-filled voids. As a result of significant pressures in the voids, film rupture proceeds, with electrolyte access to the alloy, dissolution of the enriched interfacial layer and re-anodizing. The consequence of such processes in the development of anodic films of increased porosity and reduced efficiency of film formation compared with anodizing of superpure aluminum under similar conditions.

Antireflective bilayer coatings based on Al2O3 film for UV region

OpenAIRE

Marszałek Konstanty; Winkowski Paweł; Marszałek Marta

2015-01-01

Bilayer antireflective coatings consisting of aluminium oxide Al2O3/MgF2 and Al2O3/SiO2 are presented in this paper. Oxide films were deposited by means of e-gun evaporation in vacuum of 5 × 10-3 Pa in the presence of oxygen, and magnesium fluoride was prepared by thermal evaporation on heated optical lenses made from quartz glass (Corning HPFS). Substrate temperature was maintained at 250 _C during the deposition. Thickness and deposition rate were controlled with a thickness measuring syste...

Fabrication and performance characterization of Al/Ni multilayer energetic films

Science.gov (United States)

Yang, Cheng; Hu, Yan; Shen, Ruiqi; Ye, Yinghua; Wang, Shouxu; Hua, Tianli

2014-02-01

Al/Ni multilayer bridge films, which were composed of alternate Al and Ni layers with bilayer thicknesses of 50, 100 and 200 nm, were prepared by RF magnetron sputtering. In each bilayer, the thickness ratio of Al to Ni was maintained at 3:2 to obtain an overall 1:1 atomic composition. The total thickness of Al/Ni multilayer films was 2 μm. XRD measurements show that the compound of AlNi is the final product of the exothermic reactions. DSC curves show that the values of heat release in Al/Ni multilayer films with bilayer thicknesses of 50, 100 and 200 nm are 389.43, 396.69 and 409.92 J g-1, respectively. The temperatures of Al/Ni multilayer films were obviously higher than those of Al bridge film and Ni bridge film. Al/Ni multilayer films with modulation of 50 nm had the highest electrical explosion temperature of 7000 K. The exothermic reaction in Al/Ni multilayer films leads to a more intense electric explosion. Al/Ni multilayer bridge films with modulation period of 50 nm explode more rapidly and intensely than other bridge films because decreasing the bilayer thickness results in an increased reaction velocity.

Novel method for fabrication of integrated resistors on bilayer Ag/YBa2Cu3O7 films using Ni implantation

International Nuclear Information System (INIS)

LaGraff, J.R.; Chan, H.; Murduck, J.M.; Hong, S.H.; Ma, Q.Y.

1997-01-01

A novel ion implantation method is described for fabricating low inductance integrated resistors on Ag/YBa 2 Cu 3 O 7 (YBCO) bilayer thin films. Parallel high and low value resistors were simultaneously formed by patterning bilayer films into 10-μm-wide lines, then masking and implanting with Ni to selectively inhibit superconductivity in YBCO. Low value resistors (<1Ω/sq) were formed at 77 K as the supercurrent bypassed the Ni-doped nonsuperconducting YBCO and was shunted through the overlying low resistivity Ag metal. High value resistors (20 - 140 Ω/sq) were formed by removing Ag from above the implanted YBCO forcing the current through the implanted YBCO region. The sheet resistance of both types of resistors was found to increase systematically with increasing Ni implant energy. copyright 1997 American Institute of Physics

In-situ investigation of the icosahedral Al-Cu-Fe phase formation in thin films

Energy Technology Data Exchange (ETDEWEB)

Haidara, F., E-mail: fanta.haidara@im2np.fr [IM2NP, UMR 6242 CNRS - Universite Aix-Marseille, Av. Escadrille Normandie-Niemen, Case 142, 13397 Marseille Cedex 20 (France); Duployer, B. [Universite Paul Sabatier CIRIMAT-LCMIE 2R1, 118, Route de Narbonne, 31062 Toulouse Cedex 09 (France); Mangelinck, D.; Record, M.-C. [IM2NP, UMR 6242 CNRS - Universite Aix-Marseille, Av. Escadrille Normandie-Niemen, Case 142, 13397 Marseille Cedex 20 (France)

2012-09-05

Highlights: Black-Right-Pointing-Pointer We investigated the phase formation of i-Al{sub 62.5}Cu{sub 25}Fe{sub 12.5} in thin films. Black-Right-Pointing-Pointer We characterized the samples by DSC and in-situ XRD and resistance measurements. Black-Right-Pointing-Pointer The resistivity value for i-Al{sub 62.5}Cu{sub 25}Fe{sub 12.5} was determined. - Abstract: This work is an investigation of the formation by reactive diffusion at high temperatures of the icosahedral phase, i-Al{sub 62.5}Cu{sub 25}Fe{sub 12.5}, in thin films. The samples were prepared by sputtering at room temperature. The elements Al, Cu and Fe were sequentially deposited onto oxidized silicon substrates. The two following stacking sequences, Al/Cu/Fe and Al/Fe/Cu, were investigated. The phase formation was studied using in situ resistivity, in situ X-ray Diffraction and Differential Scanning Calorimetry measurements. Whatever the stacking sequence, the sequences of phase formation evidenced during the heating treatment are similar. However the temperatures of formation for the first phases that are formed are different; they are higher in the case of the Al/Fe/Cu stacking sequence.

Anomalous precipitation hardening in Al-(1 wt%)Cu thin films

NARCIS (Netherlands)

Bergers, L. J. C.; De Hosson, J. Th. M.; Geers, M. G. D.; Hoefnagels, J. P. M.

2018-01-01

This paper concentrates on the precipitation hardening of Al-(1 wt%)Cu thin films. It is shown that in contrast to bulk, the well-known approach of precipitation hardening in confined systems like thin layers and thin films does not operate in the conventional way. This work analyses and discusses

Preparation of CuAlO2 Thin Films by Sol-Gel Method Using Nitrate Solution Dip-Coating

Directory of Open Access Journals (Sweden)

Ehara Takashi

2016-01-01

Full Text Available CuAlO2 thin films are prepared by sol-gel dip-coating followed by annealing in nitrogen atmosphere using copper nitrate and aluminum nitrate as metal source materials. X-ray diffraction (XRD patterns show (003, (006 and (009 oriented peaks of CuAlO2 at annealing temperature of 800 – 1000°C. This result indicates that the CuAlO2 films prepared in the present work are c-axis oriented. XRD peak intensity increase with annealing temperature and becomes maximum at 850°C. The CuAlO2 XRD peak decreased at annealing temperature of 900°C with appearance of a peak of CuO, and then increased again with annealing temperature until 1000 °C. The films have bandgap of 3.4 eV at annealing temperature of 850°C in which the transparency becomes the highest. At the annealing temperature of 850°C, scanning electron microscope (SEM observation reveals that the films are consist of amorphous fraction and microcrystalline CuAlO2 fraction.

Fabrication and characterization of CuAlO2 transparent thin films prepared by spray technique

International Nuclear Information System (INIS)

Bouzidi, C.; Bouzouita, H.; Timoumi, A.; Rezig, B.

2005-01-01

CuAlO 2 thin films have been grown on glass substrates using spray technique; a low-cost method of thin films depositing. The deposition was carried out in a 450-525 deg. C range of substrate temperature. The solution and gas flow rates were kept constant at 5 cm 3 min -1 and 6.10 -3 m 3 min -1 , respectively. Compressed air was used as a carrier gas. The structural, morphological and optical properties of these thin films have been studied. These properties are strongly related to the substrate temperature and to the [Cu]/[Al] molar ratio r. X-ray diffraction analysis confirmed the initial amorphous nature of as-deposited films and phase transition into crystalline CuAlO 2 with the preferential orientation (1 0 1) upon annealing at 570 deg. C. The optical transmission of 80% has been achieved in the visible spectrum. CuAlO 2 band gap energy in the range of 3.34-3.87 eV has been found by optical measurement depending on fabrication parameters

A bilayer diffusion barrier of Ru/WSi{sub x}N{sub y} for advanced Cu interconnects

Energy Technology Data Exchange (ETDEWEB)

Eom, Tae-Kwang; Sari, Windu [School of Materials Science and Engineering, Yeungnam University 214-1, Dae-dong, Gyeongsan-si, Gyeongsangbuk-do, 712-749 (Korea, Republic of); Cheon, Taehoon [Center for Core Research Facilities, Daegu Gyeongbuk Institute of Science and Technology, Sang-ri, Hyeonpung-myeon, Dalseong-gun, Daegu, 711-873 (Korea, Republic of); Kim, Soo-Hyun, E-mail: soohyun@ynu.ac.kr [School of Materials Science and Engineering, Yeungnam University 214-1, Dae-dong, Gyeongsan-si, Gyeongsangbuk-do, 712-749 (Korea, Republic of); Kim, Woo Kyoung [School of Chemical Engineering, Yeungnam University 214-1, Dae-dong, Gyeongsan-si, Gyeongsangbuk-do, 712-749 (Korea, Republic of)

2012-10-30

Bilayers of Ru (7 nm)/WSi{sub x}N{sub y} (8 nm) prepared by sputtering were investigated as diffusion barriers between Cu and Si for direct-platable Cu interconnects. Four different WSi{sub x}N{sub y} films were prepared by using various N{sub 2}/Ar flow rate ratios during sputtering of a WSi{sub 2.7} target. Sheet resistance measurements and X-ray diffractometry analysis showed that Ru/WSi{sub x}N{sub y} bilayer diffusion barriers prevented Cu diffusion during 30 min of annealing at temperatures of up to 550-750 Degree-Sign C, while the Ru single layer of the same thickness (15 nm) failed after annealing at 400 Degree-Sign C by the formation of copper silicide due to the diffusion of Cu into Si. It was shown that the performances of bilayer diffusion barriers were improved as the nitrogen content in the WSi{sub x}N{sub y} films was increased, which can be explained based on the results from transmission electron microscopy and X-ray photoelectron spectroscopy analysis of WSi{sub x}N{sub y} films deposited with different N{sub 2}/Ar flow rate ratios. From the results, the Si-N and W-N chemical bonds are strengthened as the N contents in the WSi{sub x}N{sub y} films are increased by increasing the N{sub 2} flow rate during the deposition. The results indicate that the formation of both Si-N and W-N bonds will give an effective diffusion barrier against Cu diffusion.

Interdiffusion and grain-boundary migration in Au-Cu bilayers during ion-irradiation

International Nuclear Information System (INIS)

Alexander, D.E.; Rehn, L.E.; Baldo, P.M.

1991-11-01

Ion irradiation and annealing experiments have been conducted on Au/Cu bilayer films to evaluate the effect of irradiation on diffusion-induced grain boundary migration (DIGM). The Au films were prepared with a large-grained microstructure with grain boundaries perpendicular to the film surface and extending through the film thickness. Irradiations were conducted with 1.5 MeV Kr at 228 degree C. Rutherford backscattering spectrometry of the samples revealed that interdiffusion was substantially enhanced in the irradiated area relative to the unirradiated area. Both irradiated and annealed-only areas were characterized by a nearly uniform composition of 14 at.% and 7 at.% Cu respectively through the entire thickness of the underlying Au film. Small probe X-ray energy dispersive spectroscopy showed significant lateral compositional homogeneities in both irradiated and annealed areas. These two results are consistent with previous observations of DIGM in the Au/Cu system, suggesting that this previously unexamined mechanism contributes to ion beam mixing

Optical and Dielectric Properties of CuAl₂O₄ Films Synthesized by Solid-Phase Epitaxy

Energy Technology Data Exchange (ETDEWEB)

Leu, L. C. [University of Florida, Gainesville; Norton, David P. [University of Florida; Jellison Jr, Gerald Earle [ORNL; Selvamanickam, V. [SuperPower Incorporated, Schenectady, New York; Xiong, X. [SuperPower Incorporated, Schenectady, New York

2007-01-01

The synthesis and properties of CuAl{sub 2}O{sub 4} thin films have been examined. The CuAl{sub 2}O{sub 4} films were deposited via reactive direct current magnetron sputter using a CuAl{sub 2} target. As-deposited films were amorphous. Post-deposition annealing at high temperature in oxygen yielded solid-phase epitaxy on MgO. The film orientation was cube-on-cube epitaxy on (001) MgO single-crystal substrates. The films were transparent to visible light. The band gap of crystalline CuAl{sub 2}O{sub 4} was determined to be {approx} 4 eV using a Tauc plot from the optical transmission spectrum. The dielectric constant of the amorphous films was determined to be {approx} 20-23 at 1-100 kHz.

Fabrication of electrophoretically deposited, self-assembled three-dimensional porous Al/CuO nanothermite films for highly enhanced energy output

Energy Technology Data Exchange (ETDEWEB)

Yin, Yanjun [College of Chemistry and Chemical Engineering, Chongqing University, Chongqing 400044 (China); Li, Xueming, E-mail: xuemingli@cqu.edu.cn [College of Chemistry and Chemical Engineering, Chongqing University, Chongqing 400044 (China); Shu, Yuanjie [Xi’an Modern Chemistry Research Institute, Xi’an 71000 (China); Guo, Xiaogang; Bao, Hebin; Li, Wulin; Zhu, Yuhua; Li, Yu; Huang, Xinyue [College of Chemistry and Chemical Engineering, Chongqing University, Chongqing 400044 (China)

2017-06-15

A novel porous Al/CuO nanothermite was successfully synthetized by utilizing the controllable electrophoretic deposition (EPD) method. The morphology and phase composition of the CuO and Al/CuO films were investigated in detail by field emission scanning electron microscopy (FESEM) and X-ray diffraction (XRD). When the pH of the solution was 2.0, the surface area of the Al/CuO film was able to reach 495.6 m{sup 2}/g, which was much higher than that of films grown at pH 1.0, 3.0 or 4.0. Meanwhile, the combustion performance and energy outputs were coincident with the results mentioned above. At pH 2.0, bright flames were observed after ignition, and the released heat of the nanothermite reaction reached 3.49 kJ/g, exhibiting excellent combustion performance and enhanced energy output. - Highlights: • Porous CuO films were synthesized without using templates. • The self-assembled porous Al/CuO nanothermite had a specific surface area of 495.6 m{sup 2}/g. • The energy output and combustion performance of Al/CuO nanothermite were significantly enhanced.

Spin pumping in ion-beam sputtered C o2FeAl /Mo bilayers: Interfacial Gilbert damping

Science.gov (United States)

Husain, Sajid; Kumar, Ankit; Barwal, Vineet; Behera, Nilamani; Akansel, Serkan; Svedlindh, Peter; Chaudhary, Sujeet

2018-02-01

The spin-pumping mechanism and associated interfacial Gilbert damping are demonstrated in ion-beam sputtered C o2FeAl (CFA)/Mo bilayer thin films employing ferromagnetic resonance spectroscopy. The dependence of the net spin-current transportation on Mo layer thickness, 0 to 10 nm, and the enhancement of the net effective Gilbert damping are reported. The experimental data have been analyzed using spin-pumping theory in terms of spin current pumped through the ferromagnet/nonmagnetic metal interface to deduce the real spin-mixing conductance and the spin-diffusion length, which are estimated to be 1.56 (±0.30 ) ×1019m-2 and 2.61 (±0.15 )nm , respectively. The damping constant is found to be 8.8 (±0.2 ) ×10-3 in the Mo(3.5 nm)-capped CFA(8 nm) sample corresponding to an ˜69 % enhancement of the original Gilbert damping 5.2 (±0.6 ) ×10-3 in the Al-capped CFA thin film. This is further confirmed by inserting the Cu dusting layer which reduces the spin transport across the CFA/Mo interface. The Mo layer thickness-dependent net spin-current density is found to lie in the range of 1 -4 MA m-2 , which also provides additional quantitative evidence of spin pumping in this bilayer thin-film system.

Effect of [Al] and [In] molar ratio in solutions on the growth and microstructure of electrodeposition Cu(In,Al)Se{sub 2} films

Energy Technology Data Exchange (ETDEWEB)

Huang, Kuo-Chan; Liu, Chien-Lin; Hung, Pin-Kun [Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, Tainan 701, Taiwan (China); Houng, Mau-Phon, E-mail: mphoung@eembox.ncku.edu.tw [Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, Tainan 701, Taiwan (China)

2013-05-15

In this paper, the cyclic voltammetric studies were used to realize the element's reduction potential and chemical reaction mechanism for presuming the formation routes of quaternary Cu(In,Al)Se{sub 2} crystals. Thereafter, the prior adjustment of deposited potential from −0.6 V to −1.0 V can be identified a suitable potential as co-electrodeposition. The material characteristics of Cu(In,Al)Se{sub 2} films are dominated by the percentage of aluminum content. Thus, the influence of aluminum and indium concentrations in solutions on the percentage composition, surface morphology, structural and crystal properties, and optical energy band gap of Cu(In,Al)Se{sub 2} films were investigated. Energy dispersive X-ray spectroscopy (EDS) indicated that the ratio of Al to (Al + In) in Cu(In,Al)Se{sub 2} films varied from 0.21 to 0.42 when adjusting aluminum and indium concentrations in solutions. Scanning electron microscopy (SEM) shows that the surface morphology changed from round-like structures into cauliflower-like structures and became rough when the aluminum concentration increased and indium concentration decreased in solutions. X-ray diffraction (XRD) patterns revealed three preferred growth orientations along the (1 1 2), (2 0 4/2 2 0), and (1 1 6/3 1 2) planes for all species. The (αhυ){sup 2} versus hυ plots (UV–Visible) shows that the optical energy band gap of the Cu(In,Al)Se{sub 2} films can be successfully controlled from 1.17 eV to 1.48 eV by adjusting the aluminum and indium concentrations. Furthermore, the shift of the (1 1 2) peak in the XRD patterns and variation of optical band gap are evidence that the incorporation of aluminum atoms into the crystallitic CuInSe{sub 2} forms Cu(In,Al)Se{sub 2} crystals.

NiTiCu/AlN/NiTiCu shape memory thin film heterostructures for vibration damping in MEMS

Energy Technology Data Exchange (ETDEWEB)

Kaur, Navjot; Kaur, Davinder, E-mail: dkaurfph@iitr.ernet.in

2014-03-25

Highlights: • Fabrication of NiTiCu/AlN/NiTiCu heterostructure using dc/rf magnetron sputtering. • Exhibits highest hardness (38 GPa) and elastic modulus (187 GPa). • Enhanced dissipation of mechanical energy (E{sub d} = 5.7 N J). • High damping capacity (0.052) and figure of merit (∼0.62). • Can be applied for vibration damping in MEMS. -- Abstract: Shape memory alloy (NiTiCu) thin films coupled with piezoelectric AlN layer produce an intelligent material for vibration damping. In the present study pure NiTiCu, NiTiCu/AlN and NiTiCu/AlN/NiTiCu heterostructures have been deposited on Si substrate using magnetron sputtering technique. By the use of the interfaces and shape memory effect provided by NiTiCu layers, the damping capacity can be increased along with increase in stiffness and mechanical hardness. The heterostructures were characterized in terms of structural, electrical, morphological and mechanical properties by X-ray diffraction (XRD), four probe resistivity method, atomic force microscopy, field emission scanning electron microscopy, and nanoindentation. The NiTiCu/AlN/NiTiCu heterostructure exhibit enhanced mechanical and damping properties as compared to NiTiCu/AlN and pure NiTiCu. This enhancement in hardness and damping of the heterostructure could be attributed to the shape memory effect of NiTiCu, intrinsic piezoelectricity of AlN and increased number of interfaces in heterostructure that help in dissipation of mechanical vibrations. The findings of this work provide additional impetus for the application of these heterostructures in emerging fields of nanotechnology and microelectro mechanical (MEMS) devices.

NiTiCu/AlN/NiTiCu shape memory thin film heterostructures for vibration damping in MEMS

International Nuclear Information System (INIS)

Kaur, Navjot; Kaur, Davinder

2014-01-01

Highlights: • Fabrication of NiTiCu/AlN/NiTiCu heterostructure using dc/rf magnetron sputtering. • Exhibits highest hardness (38 GPa) and elastic modulus (187 GPa). • Enhanced dissipation of mechanical energy (E d = 5.7 N J). • High damping capacity (0.052) and figure of merit (∼0.62). • Can be applied for vibration damping in MEMS. -- Abstract: Shape memory alloy (NiTiCu) thin films coupled with piezoelectric AlN layer produce an intelligent material for vibration damping. In the present study pure NiTiCu, NiTiCu/AlN and NiTiCu/AlN/NiTiCu heterostructures have been deposited on Si substrate using magnetron sputtering technique. By the use of the interfaces and shape memory effect provided by NiTiCu layers, the damping capacity can be increased along with increase in stiffness and mechanical hardness. The heterostructures were characterized in terms of structural, electrical, morphological and mechanical properties by X-ray diffraction (XRD), four probe resistivity method, atomic force microscopy, field emission scanning electron microscopy, and nanoindentation. The NiTiCu/AlN/NiTiCu heterostructure exhibit enhanced mechanical and damping properties as compared to NiTiCu/AlN and pure NiTiCu. This enhancement in hardness and damping of the heterostructure could be attributed to the shape memory effect of NiTiCu, intrinsic piezoelectricity of AlN and increased number of interfaces in heterostructure that help in dissipation of mechanical vibrations. The findings of this work provide additional impetus for the application of these heterostructures in emerging fields of nanotechnology and microelectro mechanical (MEMS) devices

Ultrathin alumina film on Cu 9at%Al(1 1 1)

Science.gov (United States)

Napetschnig, E.; Schmid, M.; Varga, P.

2008-05-01

We have investigated the structure of the clean and the oxidized (1 1 1) surface of a Cu-Al alloy with 9 at% Al by scanning tunneling microscopy (STM), Auger electron spectroscopy (AES), low energy ion scattering (LEIS) and low energy electron diffraction (LEED). Annealing of the clean crystal at 680 °C leads to segregation of Al to the surface. The Al concentration at the annealed surface is 23 ± 2% and domains with a (√3 × √3)R30° superstructure are visible, as well as small Cu(1 1 1) areas and disordered patches. Oxidation at 680 °C leads to the formation of a well-ordered flat alumina film with two very similar oxide structures. One oxide structure has a nearly commensurate rectangular cell rotated by 30° with respect to a close-packed row of the substrate and grows in three different domains. The second structure has a commensurate cell consisting of four equivalent building blocks and has a rectangular centered symmetry. This structure is rotated by 18° with respect to a close-packed row of the substrate and grows in six different domains. The rectangular building blocks of these two oxide structures have a similar thickness, the same surface termination and the same number and arrangement of the atoms as the oxide film on NiAl(1 1 0) [G. Kresse, M. Schmid, E. Napetschnig, M. Shishkin, L. Köhler, P. Varga, Science 308 (2005) 1448]. In contrast to the oxide on NiAl(1 1 0), alumina on the Cu-Al alloy crystal does not show stress-induced domain boundaries and grows in large defect-free domains. Thus, Pd deposited on this oxide nucleates not only on domain boundaries and steps but also on the unperturbed oxide, forming (1 1 1)-oriented clusters.

Fabrication and Characteristics of Al/PTFE Multilayers and Application in Micro-initiator

Science.gov (United States)

Zhang, Yuxin; Jiang, Hongchuan; Zhao, Xiaohui; Zhang, Wanli; Li, Yanrong

2017-12-01

In this paper, a micro-initiator was designed and fabricated by integrating Al/PTFE multilayers with a Cu film bridge. The regularity layer structure and interface composition of Al/PTFE multilayers was analysed by transmission electron microscope and X-ray photoelectron spectroscopy, respectively. The heat release reaction in Al/PTFE multilayers can be triggered with reaction temperature of 430 °C, and the overall heat of reaction is 3192 J/g. Al/PTFE multilayers with bilayer thickness of 200 nm was alternately deposited on a Cu film bridge to improve the electric explosion performances. Compared to Cu film bridge, the Al/PTFE/Cu integrated film bridge exhibits improved performances with longer explosion duration time, more violent explosion phenomenon and larger quantities of ejected product particles.

Growth of Cu(In,Al)(Se,S)2 thin films by selenization and sulfurization for a wide bandgap absorber

International Nuclear Information System (INIS)

Fujiwara, C.; Kawasaki, Y.; Sato, T.; Sugiyama, M.; Chichibu, S.F.

2010-01-01

Full text : Chalcopyrite structure Cu(In 1 .xAlx)(S y Se 1 -y) 2 (CIASS) alloys are attracting attention as promising candidates for the light-absorbing medium of high conversion efficiency, low cost, and lightweight solar cells. In addition, according to the wide variation in the bandgap energy (1.0-3.5eV), multiple-junction or tandem solar cells able to be fabricated using CIASS films of different compositions, x and y. In fact, several research groups have recently fabricated Cu(In,Al)Se 2 -based solar cells, and a high μ of 16.9 percent has been demonstrated. The sulfurization following selenization of Cu(In,Ga)Se2 (CIGS) films is believed to be promising for bandgap engineering of absorber material. Furthermore, it has been reported that the controlled incorporation of sulfur into CIGS films reduces the carrier recombination in the space charge region due to the deep trap states. Therefore, the sulfurization following selenization is expected to be used as a method of growth of CIASS films. However, sulfurization condition following selenization for obtaining CIASS films has not been clarified. The crystal growth of CIASS must be studied for solar cell applications. In this study, the advantages of using sulfurization for the growth of CIASS will be presented. Cu-In-Al precursors were selenized using diethylselenide (DESe) at 515-570 degrees Celsium for 60- 90 min under atmospheric pressure. The flow rates of DESe and N 2 carrier gases were 35 imol/min and 2 L/min, respectively. The films were then sulfurized at 550 degrees Celsium using S vapor. These films were characterized by SEM, EDX, XRD, and PL measurements. Using the selenization and sulfurization technique, polycrystalline Cu(In,Al)Se 2 , CuIn(Se,S) 2 , CuInS 2 films with thickness of approximately 2.0 im were formed without additional annealing. The films adhered well to the Mo/SLG substrate, which was confirmed by the peeling test. Phase separations, i.e. distinct peaks corresponding to CuInSe 2

Novel Chiral Magnetic Domain Wall Structure in Fe/Ni/Cu(001) Films

Science.gov (United States)

Chen, G.; Zhu, J.; Quesada, A.; Li, J.; N'Diaye, A. T.; Huo, Y.; Ma, T. P.; Chen, Y.; Kwon, H. Y.; Won, C.; Qiu, Z. Q.; Schmid, A. K.; Wu, Y. Z.

2013-04-01

Using spin-polarized low energy electron microscopy, we discovered a new type of domain wall structure in perpendicularly magnetized Fe/Ni bilayers grown epitaxially on Cu(100). Specifically, we observed unexpected Néel-type walls with fixed chirality in the magnetic stripe phase. Furthermore, we find that the chirality of the domain walls is determined by the film growth order with the chirality being right handed in Fe/Ni bilayers and left handed in Ni/Fe bilayers, suggesting that the underlying mechanism is the Dzyaloshinskii-Moriya interaction at the film interfaces. Our observations may open a new route to control chiral spin structures using interfacial engineering in transition metal heterostructures.

CZTS absorber layer for thin film solar cells from electrodeposited metallic stacked precursors (Zn/Cu-Sn)

Energy Technology Data Exchange (ETDEWEB)

Khalil, M.I., E-mail: mdibrahim.khalil@polimi.it [Dipartimento di Chimica, Materiali e Ing. Chimica “Giulio Natta”, Politecnico di Milano, Via Mancinelli 7, 20131 Milano (Italy); Atici, O. [Dipartimento di Chimica, Materiali e Ing. Chimica “Giulio Natta”, Politecnico di Milano, Via Mancinelli 7, 20131 Milano (Italy); Lucotti, A. [Dipartimento di Chimica, Materiali e Ing. Chimica “Giulio Natta”, Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 Milano (Italy); Binetti, S.; Le Donne, A. [Department of Materials Science and Solar Energy Research Centre (MIB-SOLAR), University of Milano- Bicocca, Via Cozzi 53, 20125 Milano (Italy); Magagnin, L., E-mail: luca.magagnin@polimi.it [Dipartimento di Chimica, Materiali e Ing. Chimica “Giulio Natta”, Politecnico di Milano, Via Mancinelli 7, 20131 Milano (Italy)

2016-08-30

Highlights: • CZTS absorber layer was fabricated by electrodeposition—annealing route from stacked bilayer precursor (Zn/Cu-Sn). • Different characterization techniques have ensured the well formed Kesterite CZTS along the film thickness also. • Two different excitation wavelengths of laser lines (514.5 and 785 nm) have been used for the Raman characterization of the films. • No significant Sn loss is observed in CZTS films after the sulfurization of the stacked bilayer precursors. • Photoluminescence spectroscopy reveals the PL peak of CZTS at 1.15 eV at low temperature (15 K). - Abstract: In the present work, Kesterite-Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films were successfully synthesized from stacked bilayer precursor (Zn/Cu-Sn) through electrodeposition-annealing route. Adherent and homogeneous Cu-poor, Zn-rich stacked metal Cu-Zn-Sn precursors with different compositions were sequentially electrodeposited, in the order of Zn/Cu-Sn onto Mo foil substrates. Subsequently, stacked layers were soft annealed at 350 °C for 20 min in flowing N{sub 2} atmosphere in order to improve intermixing of the elements. Then, sulfurization was completed at 585 °C for 15 min in elemental sulfur environment in a quartz tube furnace with N{sub 2} atmosphere. Morphological, compositional and structural properties of the films were investigated using SEM, EDS and XRD methods. Raman spectroscopy with two different excitation lines (514.5 and 785 nm), has been carried out on the sulfurized films in order to fully characterize the CZTS phase. Higher excitation wavelength showed more secondary phases, but with low intensities. Glow discharge optical emission spectroscopy (GDOES) has also been performed on films showing well formed Kesterite CZTS along the film thickness as compositions of the elements do not change along the thickness. In order to investigate the electronic structure of the CZTS, Photoluminescence (PL) spectroscopy has been carried out on the films, whose

Intermixing at the heterointerface between ZnS /Zn(S,O) bilayer buffer and CuInS2 thin film solar cell absorber

Science.gov (United States)

Bär, M.; Ennaoui, A.; Klaer, J.; Kropp, T.; Sáez-Araoz, R.; Lehmann, S.; Grimm, A.; Lauermann, I.; Loreck, Ch.; Sokoll, St.; Schock, H.-W.; Fischer, Ch.-H.; Lux-Steiner, M. C.; Jung, Ch.

2006-09-01

The application of Zn compounds as buffer layers was recently extended to wide-gap CuInS2 (CIS) based thin-film solar cells. Using an alternative chemical deposition route for the buffer preparation aiming at the deposition of a single-layer, nominal ZnS buffer without the need for any toxic reactants such as hydrazine has helped us to achieve a similar efficiency as respective CdS-buffered reference devices. After identifying the deposited Zn compound, as ZnS /Zn(S,O) bilayer buffer in former investigations [M. Bär et al., J. Appl. Phys. 99, 123503 (2006)], this time the focus lies on potential diffusion/intermixing processes at the buffer/absorber interface possibly, clarifying the effect of the heat treatment, which drastically enhances the device performance of respective final solar cells. The interface formation was investigated by x-ray photoelectron and x-ray excited Auger electron spectroscopy. In addition, photoelectron spectroscopy (PES) measurements were also conducted using tunable monochromatized synchrotron radiation in order to gain depth-resolved information. The buffer side of the buffer/absorber heterointerface was investigated by means of the characterization of Zn(S ,O)/ZnS/CIS structures where the ZnS /Zn(S,O) bilayer buffer was deposited successively by different deposition times. In order to make the (in terms of PES information depth) deeply buried absorber side of the buffer/absorber heterointerface accessible for characterization, in these cases the buffer layer was etched away by dilute HClaq. We found indications that while (out-leached) Cu from the absorber layer forms together with the educts in the chemical bath a [Zn(1-Z ),Cu2Z]S-like interlayer between buffer and absorber, Zn is incorporated in the uppermost region of the absorber. Both effects are strongly enhanced by postannealing the Zn(S ,O)/ZnS/CIS samples. However, it was determined that the major fraction of the Cu and Zn can be found quite close to the heterointerface in

A simple method to tune graphene growth between monolayer and bilayer

Directory of Open Access Journals (Sweden)

Xiaozhi Xu

2016-02-01

Full Text Available Selective growth of either monolayer or bilayer graphene is of great importance. We developed a method to readily tune large area graphene growth from complete monolayer to complete bilayer. In an ambient pressure chemical vapor deposition process, we used the sample temperature at which to start the H2 flow as the control parameter and realized the change from monolayer to bilayer growth of graphene on Cu foil. When the H2 starting temperature was above 700°C, continuous monolayer graphene films were obtained. When the H2 starting temperature was below 350°C, continuous bilayer films were obtained. Detailed characterization of the samples treated under various conditions revealed that heating without the H2 flow caused Cu oxidation. The more the Cu substrate oxidized, the less graphene bilayer could form.

Cu2O/CuO Bilayered Composite as a High-Efficiency Photocathode for Photoelectrochemical Hydrogen Evolution Reaction

Science.gov (United States)

Yang, Yang; Xu, Di; Wu, Qingyong; Diao, Peng

2016-10-01

Solar powered hydrogen evolution reaction (HER) is one of the key reactions in solar-to-chemical energy conversion. It is desirable to develop photocathodic materials that exhibit high activity toward photoelectrochemical (PEC) HER at more positive potentials because a higher potential means a lower overpotential for HER. In this work, the Cu2O/CuO bilayered composites were prepared by a facile method that involved an electrodeposition and a subsequent thermal oxidation. The resulting Cu2O/CuO bilayered composites exhibited a surprisingly high activity and good stability toward PEC HER, expecially at high potentials in alkaline solution. The photocurrent density for HER was 3.15 mA·cm-2 at the potential of 0.40 V vs. RHE, which was one of the two highest reported at the same potential on copper-oxide-based photocathode. The high photoactivity of the bilayered composite was ascribed to the following three advantages of the Cu2O/CuO heterojunction: (1) the broadened light absorption band that made more efficient use of solar energy, (2) the large space-charge-region potential that enabled a high efficiency for electron-hole separation, and (3) the high majority carrier density that ensured a faster charge transportation rate. This work reveals the potential of the Cu2O/CuO bilayered composite as a promising photocathodic material for solar water splitting.

Structural and electrical properties of CuAlMo thin films prepared by magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Birkett, Martin, E-mail: martin.birkett@northumbria.ac.uk; Penlington, Roger; Wan, Chaoying; Zoppi, Guillaume

2013-07-01

The structural and electrical properties of a low resistivity CuAlMo thin film resistor material were investigated. The thin films were grown on Al{sub 2}O{sub 3} and glass substrates by direct current (dc) magnetron sputtering. The key electrical properties of sheet resistance, temperature coefficient of resistance (TCR) and resistance stability were investigated as a function of sputtering pressure and post-deposition heat treatment time and temperature. A low sputtering pressure range of 0.13 to 0.40 Pa produced CuAlMo films with sheet resistance in the range 0.1 to 0.2 Ω/□ and resistance stability of 0.45 to 0.65% with a TCR of − 90 ppm/°C which could be shifted to zero following annealing in air at 425 °C. Films grown at higher sputtering pressures of 0.53 to 0.80 Pa had increased sheet resistance in the range 0.4 to 0.6 Ω/□ and inferior stability of 0.8 to 1.7% with a more negative TCR of − 110 to − 180 ppm/°C which could not be shifted to zero following annealing. The stability of the films grown at 0.13 and 0.40 Pa could be further improved to < 0.25% with heat treatment, due to the formation of a protective aluminium oxide layer. A minimum dwell time of 3 h at 425 °C was required to stabilise the films and set the electrical properties. - Highlights: • Thin films of copper–aluminium–molybdenum were sputtered on alumina substrates. • Film properties were investigated with variation in process conditions. • Low sputtering pressure gave improved electrical performance. • Post deposition annealing in air further improved electrical performance.

Structural and electrical properties of CuAlMo thin films prepared by magnetron sputtering

International Nuclear Information System (INIS)

Birkett, Martin; Penlington, Roger; Wan, Chaoying; Zoppi, Guillaume

2013-01-01

The structural and electrical properties of a low resistivity CuAlMo thin film resistor material were investigated. The thin films were grown on Al 2 O 3 and glass substrates by direct current (dc) magnetron sputtering. The key electrical properties of sheet resistance, temperature coefficient of resistance (TCR) and resistance stability were investigated as a function of sputtering pressure and post-deposition heat treatment time and temperature. A low sputtering pressure range of 0.13 to 0.40 Pa produced CuAlMo films with sheet resistance in the range 0.1 to 0.2 Ω/□ and resistance stability of 0.45 to 0.65% with a TCR of − 90 ppm/°C which could be shifted to zero following annealing in air at 425 °C. Films grown at higher sputtering pressures of 0.53 to 0.80 Pa had increased sheet resistance in the range 0.4 to 0.6 Ω/□ and inferior stability of 0.8 to 1.7% with a more negative TCR of − 110 to − 180 ppm/°C which could not be shifted to zero following annealing. The stability of the films grown at 0.13 and 0.40 Pa could be further improved to < 0.25% with heat treatment, due to the formation of a protective aluminium oxide layer. A minimum dwell time of 3 h at 425 °C was required to stabilise the films and set the electrical properties. - Highlights: • Thin films of copper–aluminium–molybdenum were sputtered on alumina substrates. • Film properties were investigated with variation in process conditions. • Low sputtering pressure gave improved electrical performance. • Post deposition annealing in air further improved electrical performance

Fabrication of bi-layer graphene and theoretical simulation for its possible application in thin film solar cell.

Science.gov (United States)

Behura, Sanjay K; Mahala, Pramila; Nayak, Sasmita; Yang, Qiaoqin; Mukhopadhyay, Indrajit; Janil, Omkar

2014-04-01

High quality graphene film is fabricated using mechanical exfoliation of highly-oriented pyrolytic graphite. The graphene films on glass substrates are characterized using field-emission scanning electron microscopy, atomic force microscopy, Raman spectroscopy, UV-vis spectroscopy and Fourier transform infrared spectroscopy. A very high intensity ratio of 2D to G-band (to approximately 1.67) and narrow 2D-band full-width at half maximum (to approximately 40 cm(-1)) correspond to the bi-layer graphene formation. The bi-layer graphene/p-GaN/n-InGaN/n-GaN/GaN/sAl2O3 system is studied theoretically using TCAD Silvaco software, in which the properties of exfoliated bi-layer graphene are used as transparent and conductive film, and the device exhibits an efficiency of 15.24% compared to 13.63% for ITO/p-GaN/n-InGaN/n-GaN/GaN/Al2O3 system.

MAX phase formation by intercalation upon annealing of TiCx/Al (0.4 ≤ x ≤ 1) bilayer thin films

International Nuclear Information System (INIS)

Abdulkadhim, Ahmed; Takahashi, Tetsuya; Music, Denis; Munnik, Frans; Schneider, Jochen M.

2011-01-01

TiC x /Al bilayer thin films were synthesized using combinatorial magnetron sputtering to study the influence of C content on the reaction products at different annealing temperatures. Based on energy-dispersive X-ray analysis calibrated by elastic recoil detection analysis data, x in TiC x was varied from 0.4 to 1.0. Film constitution was studied by X-ray diffraction before and after annealing at temperatures from 500 to 1000 deg. C. The formation of TiC x and Al in the as-deposited samples over the whole C/Ti range was identified. Upon annealing, TiC x reacts with Al to form Ti-Al-based intermetallics. At temperatures as low as 700 deg. C, the formation of MAX phases (space group P6 3 /mmc) is observed at x ≤ 0.7. Based on the comparison between the C content induced changes in the lattice spacing of TiC x and Ti 2 AlC as well as Ti 3 AlC 2 , we infer the direct formation of MAX phases by Al intercalation into TiC x for x ≤ 0.7.

MAX phase formation by intercalation upon annealing of TiC{sub x}/Al (0.4 {<=} x {<=} 1) bilayer thin films

Energy Technology Data Exchange (ETDEWEB)

Abdulkadhim, Ahmed; Takahashi, Tetsuya [Materials Chemistry, RWTH Aachen University, Kopernikusstrasse 10, 52074 Aachen (Germany); Music, Denis, E-mail: music@mch.rwth-aachen.de [Materials Chemistry, RWTH Aachen University, Kopernikusstrasse 10, 52074 Aachen (Germany); Munnik, Frans [Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstrasse 400, 01328 Dresden (Germany); Schneider, Jochen M. [Materials Chemistry, RWTH Aachen University, Kopernikusstrasse 10, 52074 Aachen (Germany)

2011-09-15

TiC{sub x}/Al bilayer thin films were synthesized using combinatorial magnetron sputtering to study the influence of C content on the reaction products at different annealing temperatures. Based on energy-dispersive X-ray analysis calibrated by elastic recoil detection analysis data, x in TiC{sub x} was varied from 0.4 to 1.0. Film constitution was studied by X-ray diffraction before and after annealing at temperatures from 500 to 1000 deg. C. The formation of TiC{sub x} and Al in the as-deposited samples over the whole C/Ti range was identified. Upon annealing, TiC{sub x} reacts with Al to form Ti-Al-based intermetallics. At temperatures as low as 700 deg. C, the formation of MAX phases (space group P6{sub 3}/mmc) is observed at x {<=} 0.7. Based on the comparison between the C content induced changes in the lattice spacing of TiC{sub x} and Ti{sub 2}AlC as well as Ti{sub 3}AlC{sub 2}, we infer the direct formation of MAX phases by Al intercalation into TiC{sub x} for x {<=} 0.7.

Enhanced ZnO Thin-Film Transistor Performance Using Bilayer Gate Dielectrics

KAUST Repository

Alshammari, Fwzah Hamud; Nayak, Pradipta K.; Wang, Zhenwei; Alshareef, Husam N.

2016-01-01

We report ZnO TFTs using Al2O3/Ta2O5 bilayer gate dielectrics grown by atomic layer deposition. The saturation mobility of single layer Ta2O5 dielectric TFT was 0.1 cm2 V-1 s-1, but increased to 13.3 cm2 V-1 s-1 using Al2O3/Ta2O5 bilayer dielectric with significantly lower leakage current and hysteresis. We show that point defects present in ZnO film, particularly VZn, are the main reason for the poor TFT performance with single layer dielectric, although interfacial roughness scattering effects cannot be ruled out. Our approach combines the high dielectric constant of Ta2O5 and the excellent Al2O3/ZnO interface quality, resulting in improved device performance. © 2016 American Chemical Society.

Enhanced ZnO Thin-Film Transistor Performance Using Bilayer Gate Dielectrics

KAUST Repository

Alshammari, Fwzah Hamud

2016-08-24

We report ZnO TFTs using Al2O3/Ta2O5 bilayer gate dielectrics grown by atomic layer deposition. The saturation mobility of single layer Ta2O5 dielectric TFT was 0.1 cm2 V-1 s-1, but increased to 13.3 cm2 V-1 s-1 using Al2O3/Ta2O5 bilayer dielectric with significantly lower leakage current and hysteresis. We show that point defects present in ZnO film, particularly VZn, are the main reason for the poor TFT performance with single layer dielectric, although interfacial roughness scattering effects cannot be ruled out. Our approach combines the high dielectric constant of Ta2O5 and the excellent Al2O3/ZnO interface quality, resulting in improved device performance. © 2016 American Chemical Society.

Thickness dependencies of structural and magnetic properties of cubic and tetragonal Heusler alloy bilayer films

Science.gov (United States)

Ranjbar, R.; Suzuki, K. Z.; Sugihara, A.; Ando, Y.; Miyazaki, T.; Mizukami, S.

2017-07-01

The thickness dependencies of the structural and magnetic properties for bilayers of cubic Co-based Heusler alloys (CCHAs: Co2FeAl (CFA), Co2FeSi (CFS), Co2MnAl (CMA), and Co2MnSi (CMS)) and D022-MnGa were investigated. Epitaxy of the B2 structure of CCHAs on a MnGa film was achieved; the smallest thickness with the B2 structure was found for 3-nm-thick CMS and CFS. The interfacial exchange coupling (Jex) was antiferromagnetic (AFM) for all of the CCHAs/MnGa bilayers except for unannealed CFA/MnGa samples. A critical thickness (tcrit) at which perpendicular magnetization appears of approximately 4-10 nm for the CMA/MnGa and CMS/MnGa bilayers was observed, whereas this thickness was 1-3 nm for the CFA/MnGa and CFS/MnGa films. The critical thickness for different CCHAs materials is discussed in terms of saturation magnetization (Ms) and the Jex .

In situ monitoring the growth of thin-film ZnS/Zn (S,O) bilayer on Cu-chalcopyrite for high performance thin film solar cells

Energy Technology Data Exchange (ETDEWEB)

Saez-Araoz, R.; Abou-Ras, D. [Helmholtz-Zentrum Berlin fuer Materialien und Energie GmbH, Solar Energy Division, Glienicker Strasse 100, 14109 Berlin (Germany); Niesen, T.P. [AVANCIS GmbH and Co KG Otto-Hahn-Ring 6, 81739 Munich (Germany); Neisser, A.; Wilchelmi, K. [SULFURCELL Solartechnik GmbH Barbara-McClintock-Strasse 11, 12489 Berlin (Germany); Lux-Steiner, M.Ch. [Helmholtz-Zentrum Berlin fuer Materialien und Energie GmbH, Solar Energy Division, Glienicker Strasse 100, 14109 Berlin (Germany); Ennaoui, A. [Helmholtz-Zentrum Berlin fuer Materialien und Energie GmbH, Solar Energy Division, Glienicker Strasse 100, 14109 Berlin (Germany)], E-mail: ennaoui@helmholtz-berlin.de

2009-02-02

This paper highlights the crucial role that the control of the chemical bath deposition (CBD) process plays for buffer production of Cu-chalcopyrite solar-cell devices. ZnS/Zn (S,O) bilayer was deposited on CuInS{sub 2} (CIS) and Cu(In,Ga)(SSe){sub 2} (CIGSSe) and monitored using turbidity measurements of the solution. The results were correlated to the X-ray photoemission spectra of the samples obtained by interruption of the process at sequential stages. Two different feature regimes were distinguished: In the first stage, a heterogeneous reaction takes place on the absorber resulting in the formation of pure ZnS. The second stage of the process is homogeneous, and the in-situ turbidity measurement shows a loss in the transmission of light through the CBD solution. The measured ZnL3M45M45 Auger-peaks, during this second stage of the process, show a shift of the kinetic energy from pure ZnS to a solid-solution ZnS/ZnO ('Zn (S,O)') with decreasing amount of sulfur. These results are supported by the observations from Energy-filtered transmission electron microscopy. This paper also demonstrates that monitoring of the CBD process combined with the basic understanding using surface and interface analysis have contributed to improve the reproducibility and to enhance the photovoltaic performance of Cu-chalcopyrite thin-film solar modules.

In situ monitoring the growth of thin-film ZnS/Zn (S,O) bilayer on Cu-chalcopyrite for high performance thin film solar cells

International Nuclear Information System (INIS)

Saez-Araoz, R.; Abou-Ras, D.; Niesen, T.P.; Neisser, A.; Wilchelmi, K.; Lux-Steiner, M.Ch.; Ennaoui, A.

2009-01-01

This paper highlights the crucial role that the control of the chemical bath deposition (CBD) process plays for buffer production of Cu-chalcopyrite solar-cell devices. ZnS/Zn (S,O) bilayer was deposited on CuInS 2 (CIS) and Cu(In,Ga)(SSe) 2 (CIGSSe) and monitored using turbidity measurements of the solution. The results were correlated to the X-ray photoemission spectra of the samples obtained by interruption of the process at sequential stages. Two different feature regimes were distinguished: In the first stage, a heterogeneous reaction takes place on the absorber resulting in the formation of pure ZnS. The second stage of the process is homogeneous, and the in-situ turbidity measurement shows a loss in the transmission of light through the CBD solution. The measured ZnL3M45M45 Auger-peaks, during this second stage of the process, show a shift of the kinetic energy from pure ZnS to a solid-solution ZnS/ZnO ('Zn (S,O)') with decreasing amount of sulfur. These results are supported by the observations from Energy-filtered transmission electron microscopy. This paper also demonstrates that monitoring of the CBD process combined with the basic understanding using surface and interface analysis have contributed to improve the reproducibility and to enhance the photovoltaic performance of Cu-chalcopyrite thin-film solar modules

Laser Trimming of CuAlMo Thin-Film Resistors: Effect of Laser Processing Parameters

Science.gov (United States)

Birkett, Martin; Penlington, Roger

2012-08-01

This paper reports the effect of varying laser trimming process parameters on the electrical performance of a novel CuAlMo thin-film resistor material. The films were prepared on Al2O3 substrates by direct-current (DC) magnetron sputtering, before being laser trimmed to target resistance value. The effect of varying key laser parameters of power, Q-rate, and bite size on the resistor stability and tolerance accuracy were systematically investigated. By reducing laser power and bite size and balancing this with Q-rate setting, significant improvements in resistor stability and resistor tolerance accuracies of less than ±0.5% were achieved.

Enhanced resistive switching and multilevel behavior in bilayered HfAlO/HfAlO{sub x} structures for non-volatile memory applications

Energy Technology Data Exchange (ETDEWEB)

Faita, F. L., E-mail: fabriciofaita@gmail.com [Centre of Physics, University of Minho, Campus de Gualtar, 4710-057 Braga (Portugal); Departamento de Física, Universidade Federal de Santa Catarina, Campus Trindade, 88040-900 Florianópolis, SC (Brazil); Silva, J. P. B., E-mail: josesilva@fisica.uminho.pt [Centre of Physics, University of Minho, Campus de Gualtar, 4710-057 Braga (Portugal); IFIMUP and IN-Institute of Nanoscience and Nanotechnology, Departamento de Física e Astronomia, Faculdade de Ciências da Universidade do Porto, 4169-007 Porto (Portugal); Pereira, M.; Gomes, M. J. M. [Centre of Physics, University of Minho, Campus de Gualtar, 4710-057 Braga (Portugal)

2015-12-14

In this work, hafnium aluminum oxide (HfAlO) thin films were deposited by ion beam sputtering deposition technique on Si substrate. The presence of oxygen vacancies in the HfAlO{sub x} layer deposited in oxygen deficient environment is evidenced from the photoluminescence spectra. Furthermore, HfAlO(oxygen rich)/HfAlO{sub x}(oxygen poor) bilayer structures exhibit multilevel resistive switching (RS), and the switching ratio becomes more prominent with increasing the HfAlO layer thickness. The bilayer structure with HfAlO/HfAlO{sub x} thickness of 30/40 nm displays the enhanced multilevel resistive switching characteristics, where the high resistance state/intermediate resistance state (IRS) and IRS/low resistance state resistance ratios are ≈10{sup 2} and ≈5 × 10{sup 5}, respectively. The switching mechanisms in the bilayer structures were investigated by the temperature dependence of the three resistance states. This study revealed that the multilevel RS is attributed to the coupling of ionic conduction and the metallic conduction, being the first associated to the formation and rupture of conductive filaments related to oxygen vacancies and the second with the formation of a metallic filament. Moreover, the bilayer structures exhibit good endurance and stability in time.

On the underlying micromechanisms in time-dependent anelasticity in Al-(1 wt%)Cu thin films

NARCIS (Netherlands)

Bergers, L.I.J.C.; Hoefnagels, J.P.M.; Geers, M.G.D.

2017-01-01

This paper reveals potential micro mechanisms underlying time-dependent anelasticity observed in Al-(1 wt%)Cu thin films. The analyzed deformation mechanisms involve dislocation motion and interaction with solute diffusion, grain boundaries and precipitates. In order to investigate the role of these

Antireflective bilayer coatings based on Al2O3 film for UV region

Directory of Open Access Journals (Sweden)

Marszałek Konstanty

2015-03-01

Full Text Available Bilayer antireflective coatings consisting of aluminium oxide Al2O3/MgF2 and Al2O3/SiO2 are presented in this paper. Oxide films were deposited by means of e-gun evaporation in vacuum of 5 × 10-3 Pa in the presence of oxygen, and magnesium fluoride was prepared by thermal evaporation on heated optical lenses made from quartz glass (Corning HPFS. Substrate temperature was maintained at 250 _C during the deposition. Thickness and deposition rate were controlled with a thickness measuring system Inficon XTC/2. The experimental results of the optical measurements carried out during and after the deposition process have been presented. Physical thickness measurements were made during the deposition process and resulted in 44 nm/52 nm for Al2O3/MgF2 and 44 nm/50 nm for Al2O3/SiO2 system. Optimization was carried out for ultraviolet region with minimum of reflectance at 300 nm. The influence of post deposition annealing on the crystal structure was determined by X-ray measurements. In the range from ultraviolet to the beginning of visible region, the reflectance of both systems decreased and reached minimum at 290 nm. The value of reflectance at this point, for the coating Al2O3/MgF2 was equal to R290nm = 0.6 % and for Al2O3/SiO2R290nm = 1.1 %. Despite the difference between these values both are sufficient for applications in the UV optical systems for medicine and UV laser technology.

An investigation on silar Cu(In{sub 1-x}Al{sub x})Se{sub 2} thin films

Energy Technology Data Exchange (ETDEWEB)

Dhanam, M. [PG and Research, Department of Physics, Kongunadu Arts and Science College, Coimbatore 641029 (India); Kavitha, B., E-mail: kavitha_48@yahoo.co.in [PG and Research, Department of Physics, Kongunadu Arts and Science College, Coimbatore 641029 (India); Velumani, S. [Centro de Investigacion y de Estudios Avanzados del I.P.N.(CINVESTAV) (Mexico)

2010-10-25

Cu(In{sub 1-x}Al{sub x})Se{sub 2} [CIAS] thin films were prepared for the first time by successive ionic layer adsorption and reaction [SILAR] method with two different dipping cycles. The thickness of the films was measured by gravimetric technique. The structural, morphological, compositional, optical transition and electrical investigation of SILAR CIAS thin films with respect to two different dipping cycles have been discussed in this paper.

Electrical Properties of Al, Ag, Cu, Ti and SS Thin Film for Electrode of Solar Cell

International Nuclear Information System (INIS)

Bambang Siswanto; Wirjoadi; Sudjatmoko; Tjipto Sujitno

2003-01-01

The Al, Ag, Cu, Ti and SS materials were deposited on the surface of glass substrate using plasma DC sputtering technique. The deposition process was done with the following plasma parameters : deposition time, gas pressure and substrate temperature with the aim to obtain a good conductance of thin films. Variation of substrate deposition time was 1 - 15 minutes, gas pressure was 5x10 -2 - 7x10 -2 torr and of temperature was 100 - 300 o C. The resistance measurement has been done by four points probes and the conductivity was calculated using mathematic formulation. It was obtained that the minimum resistance in the order of R = 0.07 Ω, was found at Ag materials and this was obtained at the following plasma parameters : deposition time 15 minutes, gas pressure 6x10 -2 torr and temperature 300 o C, while, the resistance of : Cu, Al, Ti and SS materials were R = 0.13 Ω, R = 450 Ω, R = 633 Ω, R = 911 Ω respectively, It could be concluded that the Ag thin film has a minimum resistance, high conductivity compared to the other materials Al, Cu, Ti and SS. Ag is therefore the suitable material for applying as electrode of solar cell. (author)

Enhanced electrical properties in bilayered ferroelectric thin films

Science.gov (United States)

Zhang, Hao; Long, WeiJie; Chen, YaQing; Guo, DongJie

2013-03-01

Sr2Bi4Ti5O18 (SBTi) single layered and Sr2Bi4Ti5O18/Pb(Zr0.53Ti0.47)O3 (SBTi/PZT) bilayered thin films have been prepared on Pt/TiO2/SiO2/Si substrates by pulsed-laser deposition (PLD). The related structural characterizations and electrical properties have been comparatively investigated. X-ray diffraction reveals that both films have crystallized into perovskite phases and scanning electron microscopy shows the sharp interfaces. Both films show well-saturated ferroelectric hysteresis loops, however, compared with the single layered SBTi films, the SBTi/PZT bilayered films have significantly increased remnant polarization ( P r) and decreased coercive field ( E c), with the applied field of 260 kV/cm. The measured P r and E c of SBTi and SBTi/PZT films were 7.9 μC/cm2, 88.1 kV/cm and 13.0 μC/cm2, 51.2 kV/cm, respectively. In addition, both films showed good fatigue-free characteristics, the switchable polarization decreased by 9% and 11% of the initial values after 2.2×109 switching cycles for the SBTi single layered films and the SBTi/PZT bilayered films, respectively. Our results may provide some guidelines for further optimization of multilayered ferroelectric thin films.

Electrical resistivity of CuAlMo thin films grown at room temperature by dc magnetron sputtering

OpenAIRE

Birkett, Martin; Penlington, Roger

2016-01-01

We report on the thickness dependence of electrical resistivity of CuAlMo films grown by dc magnetron sputtering on glass substrates at room temperature. The electrical resistance of the films was monitored in situ during their growth in the thickness range 10–1000 nm. By theoretically modelling the evolution of resistivity during growth we were able to gain an insight into the dominant electrical conduction mechanisms with increasing film thickness. For thicknesses in the range 10–25 nm the ...

Layer configurations comparison of bilayer-films for EGFET pH sensor application

Science.gov (United States)

Rahman, R. A.; Zulkefle, M. A.; Yusof, K. A.; Abdullah, W. F. H.; Rusop, M.; Herman, S. H.

2018-05-01

The comparison between bilayer configurations were presented in this paper. TiO2 and ZnO layer configurations were manipulated in order to investigate which configuration produce highest sensing performance to be applied as EGFET pH sensor. Both of the materials were deposited together as the bilayer film. The configurations were manipulated between TiO2/ZnO and ZnO/TiO2. ITO was used as the substrate in this study and both of the materials were deposited by using sol-gel spin coating technique. After deposition process, these bilayer film then undergone for EGFET pH sensor measurement and physical characterization. The EGFET pH sensor measurement was done by dipping the fabricated bilayer film into three different pH values, which is pH4, pH7 and pH10. Bilayer film act as the pH-sensitive membrane, which connected to the commercial metal-oxide semiconductor FET (MOSFET). This MOSFET was connected to the interfacing circuit. Voltage output obtained were recorded and the graph was plotted by using the data recorded. Based on the EGFET pH sensor measurement, TiO2/ZnO bilayer film exhibit higher sensing performance, compared with ZnO/TiO2. TiO2/ZnO bilayer film produced 53.10 mV/pH with the linearity value of 0.9913. Afterwards, fabricated bilayer films then were characterized with AFM to explore their surface roughness and surface topography behavior.

Interface termination and band alignment of epitaxially grown alumina films on Cu-Al alloy

Science.gov (United States)

Yoshitake, Michiko; Song, Weijie; Libra, Jiří; Mašek, Karel; Šutara, František; Matolín, Vladimír; Prince, Kevin C.

2008-02-01

Epitaxial ultrathin alumina films were grown on a Cu-9 at. % Al(111) substrate by selective oxidation of Al in the alloy in ultrahigh vacuum. The photoelectron spectra of Al 2p and valence band were measured in situ during oxidation. By analyzing multiple peaks of Al 2p, the interface atomic structure was discussed. The energy difference between the Fermi level of the substrate and the valence band maximum of alumina (band offset) was obtained. The relation between the interface atomic structure and the band offset was compared with the reported first-principles calculations. A novel method for controlling the band offset was proposed.

Electrical resistivity of CuAlMo thin films grown at room temperature by dc magnetron sputtering

Science.gov (United States)

Birkett, Martin; Penlington, Roger

2016-07-01

We report on the thickness dependence of electrical resistivity of CuAlMo films grown by dc magnetron sputtering on glass substrates at room temperature. The electrical resistance of the films was monitored in situ during their growth in the thickness range 10-1000 nm. By theoretically modelling the evolution of resistivity during growth we were able to gain an insight into the dominant electrical conduction mechanisms with increasing film thickness. For thicknesses in the range 10-25 nm the electrical resistivity is found to be a function of the film surface roughness and is well described by Namba’s model. For thicknesses of 25-40 nm the experimental data was most accurately fitted using the Mayadas and Shatkes model which accounts for grain boundary scattering of the conduction electrons. Beyond 40 nm, the thickness of the film was found to be the controlling factor and the Fuchs-Sonheimer (FS) model was used to fit the experimental data, with diffuse scattering of the conduction electrons at the two film surfaces. By combining the Fuchs and Namba (FN) models a suitable correlation between theoretical and experimental resistivity can be achieved across the full CuAlMo film thickness range of 10-1000 nm. The irreversibility of resistance for films of thickness >200 nm, which demonstrated bulk conductivity, was measured to be less than 0.03% following subjection to temperature cycles of -55 and +125 °C and the temperature co-efficient of resistance was less than ±15 ppm °C-1.

Magneto-optical enhancement of TbFeCo/Al films at short wavelength

International Nuclear Information System (INIS)

Song, K.; Ito, H.; Naoe, M.

1992-01-01

In this paper, the bilayered films composed of magneto-optical (MO) amorphous Tb-Te-Co alloy and reflective Al layers were deposited successively on glass slide substrates without plasma exposure by using the facing targets sputtering system. The specimen films with the thickness of MO layer t MO below 5 nm showed apparent perpendicular magnetic anisotropy constant Ku of 2 to 3 x 10 6 erg/cm3 and rectangular Kerr loop. The specimen film with t MO of 14 nm took the Kerr rotation angle θ k as large as about 0.36 degree, at the wavelength λ as short as about 400 nm. These values of θ k is considerably larger than those of the bilayered films in the conventional MO media. Normally, the bilayered films with t MO above 50 nm took θ k of about 0.25 degree at θ k of 400 nm

Study on nanocomposite Ti-Al-Si-Cu-N films with various Si contents deposited by cathodic vacuum arc ion plating

Energy Technology Data Exchange (ETDEWEB)

Shi, J. [State Key Laboratory of Corrosion and Protection, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang 110016 (China); Institute of Materials Engineering, University of Siegen, Paul-Bonatz-Strasse 9-11, Siegen 57076 (Germany); Muders, C.M.; Kumar, A. [Institute of Materials Engineering, University of Siegen, Paul-Bonatz-Strasse 9-11, Siegen 57076 (Germany); Jiang, X., E-mail: xin.jiang@uni-siegen.de [Institute of Materials Engineering, University of Siegen, Paul-Bonatz-Strasse 9-11, Siegen 57076 (Germany); Pei, Z.L.; Gong, J. [State Key Laboratory of Corrosion and Protection, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang 110016 (China); Sun, C., E-mail: csun@imr.ac.cn [State Key Laboratory of Corrosion and Protection, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang 110016 (China)

2012-10-01

Highlights: Black-Right-Pointing-Pointer XRD peaks show a tendency of decreasing intensity with increasing Si content. Black-Right-Pointing-Pointer Ti-Al-Si-Cu-N films present different microstructure with increasing Si content. Black-Right-Pointing-Pointer Films with 6 at.% Si content obtain the highest hardness, elastic modulus and H{sup 3}/E{sup 2}. Black-Right-Pointing-Pointer The wear rate decreases with an increase in hardness. - Abstract: In this study, nanocomposite Ti-Al-Si-Cu-N films were deposited on high speed steel substrates by the vacuum cathode arc ion plating (AIP) technique. By virtue of X-ray diffraction (XRD) analysis, X-ray photoelectron spectroscopy (XPS), and field emission scanning electron microscopy (FESEM), the influence of silicon content on the film microstructure and characteristics was investigated systematically, including the chemical composition, crystalline structure as well as cross-section morphologies. With increasing the silicon content, a deterioration of the preferred orientation and a dense globular structure were detected. In the meanwhile, atomic force microscopy (AFM), nano-indentation, Rockwell indenter and reciprocating test were also utilized to analyze the hardness, elastic modulus, H{sup 3}/E{sup 2}, friction coefficient, adhesive strength and wear rate of the Ti-Al-Si-Cu-N films. The results showed that an optimal silicon content correlated with the best mechanical and tribological properties of the presented Ti-Al-Si-Cu-N films existed. With increasing the silicon content, the hardness, elastic modulus and the ratio H{sup 3}/E{sup 2} first were improved gradually, and then were impaired sharply again. When the silicon content reached to 6 at.%, the film possessed the highest hardness, elastic modulus and ratio H{sup 3}/E{sup 2} of approximately 24 GPa, 218 GPa and 0.31, respectively. Besides, films containing both 6 at.% and 10 at.% Si contents obtained a relatively low friction coefficient and a good adhesive

Conventional proximity effect in bilayers of superconducting underdoped $La_{1.88}Sr_{0.12}CuO_4$ islands coated with non superconducting overdoped $La_{1.65}Sr_{0.35}CuO_4$

OpenAIRE

Koren, G.; Millo, O.

2009-01-01

Following a recent study by our group in which a large $T_c$ enhancement was reported in bilayers of the non-superconducting $La_{1.65}Sr_{0.35}CuO_4$ and superconducting $La_{1.88}Sr_{0.12}CuO_4$ films [Phys. Rev. Lett. \\textbf{101}, 057005 (2008)], we checked if a similar effect occurs when superconducting $La_{1.88}Sr_{0.12}CuO_4$ islands are coated with a continuous layer of the non superconducting $La_{1.65}Sr_{0.35}CuO_4$. We found that no such phenomenon is observed. The bare supercond...

Electroless Cu Plating on Anodized Al Substrate for High Power LED.

Science.gov (United States)

Rha, Sa-Kyun; Lee, Youn-Seoung

2015-03-01

Area-selective copper deposition on screen printed Ag pattern/anodized Al/Al substrate was attempted using a neutral electroless plating processes for printed circuit boards (PCBs), according to a range of variation of pH 6.5-pH 8 at 70 °C. The utilized basic electroless solution consisted of copper(II) sulfate pentahydrate, sodium phosphinate monohydrate, sodium citrate tribasic dihydrate, ammonium chloride, and nickel(II) sulfate hexahydrate. The pH of the copper plating solutions was adjusted from pH 6.5 to pH 8 using NH4OH. Using electroless plating in pH 6.5 and pH 7 baths, surface damage to the anodized Al layer hardly occurred; the structure of the plated Cu-rich films was a typical fcc-Cu, but a small Ni component was co-deposited. In electroless plating at pH 8, the surface of the anodized Al layer was damaged and the Cu film was composed of a lot of Ni and P which were co-deposited with Cu. Finally, in a pH 7 bath, we can make a selectively electroless plated Cu film on a PCB without any lithography and without surface damage to the anodized Al layer.

Early stages of interface reactions between AlN and Ti thin films

CERN Document Server

Pinkas, M; Froumin, N; Pelleg, J; Dariel, M P

2002-01-01

The early stages of interface reactions between AlN and Ti thin films were investigated using x-ray diffractions, Auger electron spectroscopy, cross section transmission electron microscopy (XTEM), and high resolution XTEM. The AlN/Ti bilayers were deposited on a molybdenum substrate using reactive and nonreactive magnetron sputtering techniques. After deposition, the bilayers were heat treated for 1-10 h at 600 deg. C in a nitrogen atmosphere. Decomposition of the AlN layer took place at the AlN/Ti interface and its products, Al and N, reacted with Ti to produce a AlN/Al sub 3 Ti/Ti sub 2 N/Ti sub 3 Al/alpha-(Ti, Al)ss phase sequence. This phase sequence is not consistent with the Ti-Al-N phase diagram and is believed to be the outcome of the particular conditions that prevail in the thin film and correspond to a particular set of kinetic parameters. A model that explains the development of the phase sequence and predicts its evolution after prolonged heat treatments is put forward. The applicability of such...

Antimicrobial effect of Al2O3, Ag and Al2O3/Ag thin films on Escherichia coli and Pseudomonas putida

International Nuclear Information System (INIS)

Angelov, O; Stoyanova, D; Ivanova, I; Todorova, S

2016-01-01

The influence of Al 2 O 3 , Ag and Al 2 O 3 /Ag thin films on bacterial growth of Gramnegative bacteria Pseudomonas putida and Escherichia coli is studied. The nanostructured thin films are deposited on glass substrates without intentional heating through r.f. magnetron sputtering in Ar atmosphere of Al 2 O 3 and Ag targets or through sequential sputtering of Al 2 O 3 and Ag targets, respectively. The individual Ag thin films (thickness 8 nm) have a weak bacteriostatic effect on Escherichia coli expressed as an extended adaptive phase of the bacteria up to 5 hours from the beginning of the experiment, but the final effect is only 10 times lower bacterial density than in the control. The individual Al 2 O 3 film (20 nm) has no antibacterial effect against two strains E. coli - industrial and pathogenic. The Al 2 O 3 /Ag bilayer films (Al 2 O 3 20 nm/Ag 8 nm) have strong bactericidal effect on Pseudomonas putida and demonstrate an effective time of disinfection for 2 hours. The individual films Al2O3 and Ag have not pronounced antibacterial effect on Pseudomonas putida . A synergistic effect of Al2O3/Ag bilayer films in formation of oxidative species on the surface in contact with the bacterial suspension could be a reason for their antimicrobial effect on E. coli and P. putida . (paper)

Effects of the Buffer Layers on the Adhesion and Antimicrobial Properties of the Amorphous ZrAlNiCuSi Films

Science.gov (United States)

Chiang, Pai-Tsung; Chen, Guo-Ju; Jian, Sheng-Rui; Shih, Yung-Hui

2011-06-01

To extend the practical applications of the bulk metallic glasses (BMGs), the preparation of the metallic glass coatings on various substrates becomes an important research issue. Among the interfacial properties of the coatings, the adhesion between films and substrates is the most crucial. In this study, amorphous Zr61Al7.5Ni10Cu17.5Si4 (ZrAlNiCuSi) thin films were deposited on SUS304 stainless steel at various sputtering powers by DC sputtering. According to the scratch tests, the introduction of the Cr and Ti buffer layers effectively improves the adhesion between the amorphous thin films and substrate without changing the surface properties, such as roughness and morphology. The antimicrobial results show that the biological activities of these microbes, except Acinetobacter baumannii, are effectively suppressed during the test period.

Composition of Cu/Al system constructed by means of dynamic atomic deposition

International Nuclear Information System (INIS)

Tashlykov, I.S.; Tul'ev, V.V.

2011-01-01

Rutherford backscattering and RUMP simulation programme have been applied to investigate composition of Cu/Al system prepared using dynamic atomic deposition process when deposition of Cu thin film on Al substrate was assisted with 6 keV Ar + ions irradiation. It is estimated that thin ( ~15 nm) surface layer consists of ~50 at.% Cu, ~10 at.% Ar, ~4 at.% O and the remaining is Al. Dynamic deposition of Cu on Al substrate is accompanied with radiation enhanced diffusion of Cu, O, Ar atoms in substrate and out diffusion of Al atoms in deposited Cu coating. (authors)

Comparative study of experimental and numerical behaviors of microwave absorbers based on ultrathin Al and Cu films

Energy Technology Data Exchange (ETDEWEB)

Costa, D.S., E-mail: daniel_eng_aero@hotmail.com [Instituto de Ciência e Tecnologia/UNIFESP, Rua Talim, 330, CEP 12.231-280, São José dos Campos, SP (Brazil); Nohara, E.L. [Universidade de Taubaté, Rua Daniel Danelli, s/n, CEP 12060-440, Taubaté, SP (Brazil); Rezende, M.C. [Instituto de Ciência e Tecnologia/UNIFESP, Rua Talim, 330, CEP 12.231-280, São José dos Campos, SP (Brazil)

2017-06-15

The study of radar absorbing materials increasingly thin, lightweight and flexible has gained growing importance in recent years. In military area these characteristics allow the reduction of weight and volume of platforms, and in civilian sector these materials stimulate innovative projects of electronic and microwave devices. The present work was devoted to studying ultrathin films of Al (20–80 nm) and Cu (10–100 nm) deposited on poly(ethylene terephthalate) (PET) substrate by magnetron sputtering technique. The electrical conductivity values of the films were determined by 4 probes method, the S parameters (S{sub 11} and S{sub 12}) were obtained by transmission line using a X-band waveguide and the skin depth calculated. The results show the dependence of the electrical conductivity with the thickness for both films. The experimental values of microwave attenuation were compared with calculated values based on the equivalent electric circuit theory. This comparison shows a good adjustment and confirms the use of electrical conductivity measurements to predict the microwave absorption behavior of ultrathin films. - Highlights: • This article focuses on recent progresses in ultrathin films aiming microwave absorption. • Nanometric films of Al and Cu deposited on poly(ethylene terephthalate) substrate were produced. • Electrical conductivity (4-probes) and S-parameters (S{sub 11} and S{sub 12}) of nanofilms were measured. • Calculated microwave attenuations were obtained based on the equivalent electric circuit theory. • A good fit between experimental and predictions data of microwave absorption was observed.

Comparative study of experimental and numerical behaviors of microwave absorbers based on ultrathin Al and Cu films

International Nuclear Information System (INIS)

Costa, D.S.; Nohara, E.L.; Rezende, M.C.

2017-01-01

The study of radar absorbing materials increasingly thin, lightweight and flexible has gained growing importance in recent years. In military area these characteristics allow the reduction of weight and volume of platforms, and in civilian sector these materials stimulate innovative projects of electronic and microwave devices. The present work was devoted to studying ultrathin films of Al (20–80 nm) and Cu (10–100 nm) deposited on poly(ethylene terephthalate) (PET) substrate by magnetron sputtering technique. The electrical conductivity values of the films were determined by 4 probes method, the S parameters (S_1_1 and S_1_2) were obtained by transmission line using a X-band waveguide and the skin depth calculated. The results show the dependence of the electrical conductivity with the thickness for both films. The experimental values of microwave attenuation were compared with calculated values based on the equivalent electric circuit theory. This comparison shows a good adjustment and confirms the use of electrical conductivity measurements to predict the microwave absorption behavior of ultrathin films. - Highlights: • This article focuses on recent progresses in ultrathin films aiming microwave absorption. • Nanometric films of Al and Cu deposited on poly(ethylene terephthalate) substrate were produced. • Electrical conductivity (4-probes) and S-parameters (S_1_1 and S_1_2) of nanofilms were measured. • Calculated microwave attenuations were obtained based on the equivalent electric circuit theory. • A good fit between experimental and predictions data of microwave absorption was observed.

Microspot two-photon photoemission spectroscopy for CuPc film on HOPG

International Nuclear Information System (INIS)

Yamada, T.; Yamamoto, R.; Munakata, T.

2015-01-01

Highlights: • Unoccupied levels of CuPc/HOPG are assigned by using 2PPE microspectroscopy. • Lateral distribution of unoccupied energy levels is imaged. • Modified IPS stabilized by the hole localized in the 2nd layer molecule is identified. - Abstract: Microspot two-photon photoemission (micro-2PPE) spectroscopy has been applied to measure the lateral distribution of unoccupied levels on copper phthalocyanine (CuPc) film on HOPG. In addition to the LUMO-derived level and the image potential state (IPS) on the film, we identified the modified IPS which is stabilized by the hole localized in a molecule. We show that modified IPS is observed only on bilayer area, reflecting the localization of the hole in a molecule. The modified IPS is absent on monolayer area, because the hole strongly interacts with substrate.

Surface-driven, one-step chemical vapor deposition of γ-Al{sub 4}Cu{sub 9} complex metallic alloy film

Energy Technology Data Exchange (ETDEWEB)

Prud’homme, Nathalie [CIRIMAT, Université de Toulouse - CNRS, 4 allée Emile Monso, BP-44362, 31432 Toulouse Cedex 4 (France); Université Paris-Sud 11, LEMHE/ICMMO, Bat 410, 91405 Orsay Cedex (France); Duguet, Thomas, E-mail: thomas.duguet@ensiacet.fr [CIRIMAT, Université de Toulouse - CNRS, 4 allée Emile Monso, BP-44362, 31432 Toulouse Cedex 4 (France); Samélor, Diane; Senocq, François; Vahlas, Constantin [CIRIMAT, Université de Toulouse - CNRS, 4 allée Emile Monso, BP-44362, 31432 Toulouse Cedex 4 (France)

2013-10-15

The present paper is a paradigm for the one-step formation of complex intermetallic coatings by chemical vapor deposition. It genuinely addresses the challenge of depositing an intermetallic coating with comparable contents of Cu and Al. Depending on processing conditions, a pure γ-Al{sub 4}Cu{sub 9} and multi-phase Al-Cu films are grown with wetting properties of the former being similar to its bulk counterpart. The deposition process and its parametric investigation are detailed. Two metalorganic precursors are used taking into account their transport and chemical properties, and deposition temperature ranges. On line and ex situ characterizations enlighten the competition which occurs at the growing surface between molecular fragments, and which limits growth rates. Notably, introducing a partial pressure of hydrogen gas during deposition reduces Al growth rate from dimethylethylamine alane (DMEAA), by displacing the hydrogen desorption equilibrium. This Al partial growth rate decrease is not sufficient to achieve a Cu/Al atomic ratio that is high enough for the formation of intermetallics with close Al and Cu compositions. A fivefold increase of the flux of the gaseous copper(I) cyclopentadienyl triethylphosphine CpCuPEt{sub 3}, whereas the DMEAA flux remains constant, results in the targeted Al/Cu atomic ratio equal to 44/56. Nevertheless, the global growth rate is rendered extremely low by the deposition inhibition caused by a massive phosphine adsorption (-PEt{sub 3}). Despite these limitations, the results pave the way towards the conformal coating of complex surface geometries by such intermetallic compounds.

Controlling the alloy composition of PtNi nanocrystals using solid-state dewetting of bilayer films

Energy Technology Data Exchange (ETDEWEB)

Seo, Okkyun; Oh, Se An; Lee, Ji Yeon; Ha, Sung Soo; Kim, Jae Myung; Choi, Jung Won; Kim, Jin-Woo [Department of Physics and Photon Science & School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 61005 (Korea, Republic of); Kang, Hyon Chol [Department of Materials and Science Engineering, Chosun University, Gwangju 61542 (Korea, Republic of); Noh, Do Young, E-mail: dynoh@gist.ac.kr [Department of Physics and Photon Science & School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 61005 (Korea, Republic of)

2016-05-15

We demonstrate that solid-state dewetting of bilayer films is an effective way for obtaining bimetallic alloy nanocrystals of controlled composition. When a Pt–Ni bilayer film were annealed near 700 °C, Pt and Ni atoms inter-diffused to form a PtNi bimetallic alloy film. Upon annealing at higher temperatures, the bilayer films transformed into <111> oriented PtNi alloy nanocrystals in small-rhombicuboctahedron shape through solid-state dewetting process. The Pt content of the nanocrystals and the alloy films, estimated by applying the Vegard's law to the relaxed lattice constant, was closely related to the thickness of each layer in the as-grown bilayer films which can be readily controlled during bilayer deposition. - Highlights: • Composition control of PtNi nanoparticles using solid state dewetting is proposed. • PtNi alloy composition was controlled by thickness ratio of Pt–Ni bilayer films. • PtNi alloy nanocrystals were obtained in small-rhombicuboctahedron shape.

Crystallinity and superconductivity of as-grown MgB2 thin films with AlN buffer layers

International Nuclear Information System (INIS)

Tsujimoto, K.; Shimakage, H.; Wang, Z.; Kaya, N.

2005-01-01

The effects of aluminum nitride (AlN) buffer layers on the superconducting properties of MgB 2 thin film were investigated. The AlN buffer layers and as-grown MgB 2 thin films were deposited in situ using the multiple-target sputtering system. The best depositing condition for the AlN/MgB 2 bi-layer occurred when the AlN was deposited on c-cut sapphire substrates at 290 deg. C. The crystallinity of the AlN/MgB 2 bi-layer was studied using the XRD φ-scan and it showed that AlN and MgB 2 had the same in-plane alignment rotated at an angle of 30 deg. as compared to c-cut sapphire. The critical temperature of the MgB 2 film was 29.8 K and the resistivity was 50.0 μΩ cm at 40 K

Characteristics of Bilayer Molybdenum Films Deposited Using RF Sputtering for Back Contact of Thin Film Solar Cells

Directory of Open Access Journals (Sweden)

Sea-Fue Wang

2014-01-01

Full Text Available Mo films prepared under a single deposition condition seldom simultaneously obtain a low resistivity and a good adhesion necessary for use in solar cells. In order to surmount the obstacle, bilayer Mo films using DC sputtering at a higher working pressure and a lower working pressure have been attempted as reported in the literature. In this study, RF sputtering with different powers in conjunction with different working pressures was explored to prepare bilayer Mo film. The first bottom layer was grown at a RF sputtering power of 30 W and a working pressure of 12 mTorr, and the second top layer was deposited at 100 W and 4.5 mTorr. The films revealed a columnar growth with a preferred orientation along the (110 plane. The bilayer Mo films reported an electrical resistivity of 6.35 × 10−5 Ω-cm and passed the Scotch tape test for adhesion to the soda-lime glass substrate, thereby qualifying the bilayer Mo films for use as back metal contacts for CIGS substrates.

Fabrication of oriented wrinkles on polydopamine/polystyrene bilayer films.

Science.gov (United States)

Wang, Rong; Long, Yuhua; Zhu, Tang; Guo, Jing; Cai, Chao; Zhao, Ning; Xu, Jian

2017-07-15

Wrinkles exist widely in nature and our life. In this paper, wrinkles on polydopamine (PDA)/polystyrene (PS) bilayer films were formed by thermal annealing due to the different thermal coefficients of expansion of each layer. The factors that influenced the dimensions of wrinkles were studied. We found that oriented wrinkles could be formed if the bilayer films were patterned with micro-grooves, and the degree of the orientation depended on the thickness of the PDA and the dimensions of the grooves. Combined with the strong adhesion, biocompatibility and reactivity of PDA, the oriented wrinkles on PDA/PS patterned bilayers may find potential application in diffraction gratings, optical sensors and microfluidic devices. Copyright © 2017 Elsevier Inc. All rights reserved.

Mechanical and tribological properties of a-C/a-C:Ti multilayer films with various bilayer periods

Energy Technology Data Exchange (ETDEWEB)

Bai, W.Q.; Cai, J.B.; Wang, X.L., E-mail: wangxl@zju.edu.cn; Wang, D.H.; Gu, C.D.; Tu, J.P., E-mail: tujp@zju.edu.cn

2014-05-02

Thick a-C/a-C:Ti multilayer films with bilayer periods of 12–70 nm were deposited on Ti6Al4V alloy substrate by means of closed field unbalance magnetron sputtering. The morphology and microstructure of the multilayer films were investigated by scanning electron microscopy, high resolution transmission electron microscopy and X-ray photoelectron spectroscopy. Nanocrystalline TiC was distributed in the a-C:Ti layer and at the interface between the two adjacent layers. The mechanical and tribological properties were evaluated by Rockwell and scratch tests, a nanoindentor and a ball-on-disk tribometer. The multilayer film with a bilayer period of 12 nm showed the highest adhesion strength, hardness (26 GPa) and elastic modulus (232 GPa); it also had the lowest average coefficient of friction (0.09) and a wear rate of 8.06 × 10{sup −17} m{sup 3} N{sup −1} m{sup −1}. - Highlights: • a-C/a-C:Ti multilayers with various bilayer periods were prepared. • Nanocrystalline TiCs were confirmed in the a-C:Ti layer and at the interface. • These multilayers show fine ability to comply with substrate deformation. • The multilayer with a bilayer period of 12 nm exhibits the best properties.

Tunable resistive switching behaviour in ferroelectric–ZnO bilayer films

International Nuclear Information System (INIS)

Zhou Mingxiu; Li Ziwei; Chen Bo; Wan Jianguo; Liu Junming

2013-01-01

Pb(Zr 0.52 Ti 0.48 )O 3 /ZnO bilayer films with various ZnO-layer thicknesses were prepared by a sol–gel process, and their phase structures, electric conduction and polarization behaviour were measured. The results showed that the preferential crystal orientation of the ZnO layer changed with a change in its thickness. The strong dependence of both asymmetric current–voltage and polarization–voltage characteristics on the ZnO-layer thickness was observed. The resistance ratio of the high-resistance state (HRS) to the low-resistance state (LRS) increased with increasing ZnO-layer thickness, and a high rectification ratio was obtained in the bilayer film with an optimized ZnO-layer thickness. The combined effects of interface polarization coupling and energy band structure on the resistive switching behaviour of the bilayer films were revealed, and the electric conduction mechanisms of the bilayer films at both HRS and LRS were analysed in detail. This work presents an effective method to modulate the resistive switching behaviour of ferroelectric–ZnO heterostructures, which is significant in designing high-performance ferroelectric–semiconductor heterostructures for actual applications. (paper)

Magnetic properties of epitaxial bismuth ferrite-garnet mono- and bilayers

International Nuclear Information System (INIS)

Semuk, E.Yu.; Berzhansky, V.N.; Prokopov, A.R.; Shaposhnikov, A.N.; Karavainikov, A.V.; Salyuk, O.Yu.; Golub, V.O.

2015-01-01

Magnetic properties of Bi 1.5 Gd 1.5 Fe 4.5 Al 0.5 O 12 (84 nm) and Bi 2.8 Y 0.2 Fe 5 O 12 (180 nm) films epitaxially grown on gallium-gadolinium garnet (GGG) single crystal (111) substrate as well as Bi 1.5 Gd 1.5 Fe 4.5 Al 0.5 O 12 /Bi 2.8 Y 0.2 Fe 5 O 12 bilayer were investigated using ferromagnetic resonance technique. The mismatch of the lattice parameters of substrate and magnetic layers leads to formation of adaptive layers which affect on the high order anisotropy constant of the films but practically do not affect on uniaxial perpendicular magnetic anisotropy The magnetic properties of the bilayer film were explained in supposition of strong exchange coupling between magnetic layers taking into account film-film and film-substrate elastic interaction. - Highlights: • Magnetic parameters of epitaxial Bi-YIG films and bilayers on GGG substrate. • Adaptive layers affect on high order magnetic anisotropy. • Magnetic properties of bilayers are result of strong exchange interaction

Coupled growth of Al-Al2Cu eutectics in Al-Cu-Ag alloys

International Nuclear Information System (INIS)

Hecht, U; Witusiewicz, V; Drevermann, A

2012-01-01

Coupled eutectic growth of Al and Al 2 Cu was investigated in univariant Al-Cu-Ag alloys during solidification with planar and cellular morphology. Experiments reveal the dynamic selection of small spacings, below the minimum undercooling spacing and show that distinct morphological features pertain to nearly isotropic or anisotropic Al-Al 2 Cu interfaces.

Biomimetic Cationic Nanoparticles Based on Silica: Optimizing Bilayer Deposition from Lipid Films

Directory of Open Access Journals (Sweden)

Rodrigo T. Ribeiro

2017-10-01

Full Text Available The optimization of bilayer coverage on particles is important for a variety of biomedical applications, such as drug, vaccine, and genetic material delivery. This work aims at optimizing the deposition of cationic bilayers on silica over a range of experimental conditions for the intervening medium and two different assemblies for the cationic lipid, namely, lipid films or pre-formed lipid bilayer fragments. The lipid adsorption on silica in situ over a range of added lipid concentrations was determined from elemental analysis of carbon, hydrogen, and nitrogen and related to the colloidal stability, sizing, zeta potential, and polydispersity of the silica/lipid nanoparticles. Superior bilayer deposition took place from lipid films, whereas adsorption from pre-formed bilayer fragments yielded limiting adsorption below the levels expected for bilayer adsorption.

Preparation of Copper (Cu)-Nickel (Ni) Alloy Thin Films for Bilayer Graphene Growth

Science.gov (United States)

2016-02-01

of each sample after annealing . Transene brand APS-100 etchant is used to completely wet etch away the unmasked portion of the Cu-Ni alloy, and...morphological changes in the metal surfaces such as roughness, grain size, and crystal orientation due to the effects of annealing temperature, hydrogen...post- annealed at 1000 °C for 30 min, 40% H2, 15 Torr.............5 Fig. 6 AFM imaging of Cu:Ni alloyed films with ratios of a) 6:1 , b) 4:1, and c) 3

Magnetic properties of epitaxial bismuth ferrite-garnet mono- and bilayers

Energy Technology Data Exchange (ETDEWEB)

Semuk, E.Yu.; Berzhansky, V.N.; Prokopov, A.R.; Shaposhnikov, A.N.; Karavainikov, A.V. [Taurida National V.I. Vernadsky University, Vernadsky Avenue, 4, 95007 Simferopol (Ukraine); Salyuk, O.Yu. [Institute of Magnetism NASU and MESU, 36-B Vernadsky Blvd., 03142 Kiev (Ukraine); Golub, V.O., E-mail: golub@imag.kiev.ua [Institute of Magnetism NASU and MESU, 36-B Vernadsky Blvd., 03142 Kiev (Ukraine)

2015-11-15

Magnetic properties of Bi{sub 1.5}Gd{sub 1.5}Fe{sub 4.5}Al{sub 0.5}O{sub 12} (84 nm) and Bi{sub 2.8}Y{sub 0.2}Fe{sub 5}O{sub 12} (180 nm) films epitaxially grown on gallium-gadolinium garnet (GGG) single crystal (111) substrate as well as Bi{sub 1.5}Gd{sub 1.5}Fe{sub 4.5}Al{sub 0.5}O{sub 12}/Bi{sub 2.8}Y{sub 0.2}Fe{sub 5}O{sub 12} bilayer were investigated using ferromagnetic resonance technique. The mismatch of the lattice parameters of substrate and magnetic layers leads to formation of adaptive layers which affect on the high order anisotropy constant of the films but practically do not affect on uniaxial perpendicular magnetic anisotropy The magnetic properties of the bilayer film were explained in supposition of strong exchange coupling between magnetic layers taking into account film-film and film-substrate elastic interaction. - Highlights: • Magnetic parameters of epitaxial Bi-YIG films and bilayers on GGG substrate. • Adaptive layers affect on high order magnetic anisotropy. • Magnetic properties of bilayers are result of strong exchange interaction.

Photoconducting and photocapacitance properties of Al/p-CuNiO{sub 2}-on-p-Si isotype heterojunction photodiode

Energy Technology Data Exchange (ETDEWEB)

Elsayed, I.A. [Physics Department, College of Science and Humanitarian Studies, Salman bin Abdulaziz University (Saudi Arabia); Physics Department, Faculty of Science, Damietta University (Egypt); Çavaş, Mehmet [Department of Mechatronics, Faculty of Technology, Firat University, Elazig (Turkey); Gupta, R. [Department of Chemistry, Pittsburg State University, Pittsburg, KS 66762 (United States); Fahmy, T. [Physics Department, College of Science and Humanitarian Studies, Salman bin Abdulaziz University (Saudi Arabia); Polymer Research Group, Physics Department, Faculty of Science, Mansoura University (Egypt); Al-Ghamdi, Ahmed A. [Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah 21589 (Saudi Arabia); Yakuphanoglu, F., E-mail: fyhan@hotmail.com [Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah 21589 (Saudi Arabia); Physics Department, Faculty of Science, Firat University, Elazig (Turkey)

2015-07-25

Highlights: • The CuNiO{sub 2} thin film was prepared by sol gel method. • The diode has a high photosensitivity value of 1.02 × 10{sup 3} under 100 mW/cm{sup 2}. • Al/p-Si/CuNiO{sub 2}/Al can used in optoelectronic device applications. - Abstract: Thin film of CuNiO{sub 2} was prepared by sol gel method to fabricate a photodiode. The surface morphology of the CuNiO{sub 2} thin film was investigated by atomic force microscopy (AFM). AFM results indicated that CuNiO{sub 2} film was formed from the nanoparticles and the average size of the nanoparticles was about 115 nm. The optical band gap of CuNiO{sub 2} film was calculated using optical data and was found to be about 2.4 eV. A photodiode having a structure of Al/p-Si/CuNiO{sub 2}/Al was prepared. The electronic parameters such as ideality factor and barrier height of the diode were determined and were obtained to be 8.23 and 0.82 eV, respectively. The interface states properties of the Al/p-Si/CuNiO{sub 2}/Al diode was performed using capacitance–voltage and conductance–voltage characteristics. The series resistance of the Al/p-Si/CuNiO{sub 2}/Al photo diode was observed to be decreasing with increasing frequency. The diode exhibited a photoconducting behavior with a high photosensitivity value of 1.02 × 10{sup 3} under 100 mW/cm{sup 2}. The obtained results indicate that Al/p-Si/CuNiO{sub 2}/Al can used in optoelectronic device applications.

Behavior of aluminum oxide, intermetallics and voids in Cu-Al wire bonds

International Nuclear Information System (INIS)

Xu, H.; Liu, C.; Silberschmidt, V.V.; Pramana, S.S.; White, T.J.; Chen, Z.; Acoff, V.L.

2011-01-01

Nanoscale interfacial evolution in Cu-Al wire bonds during isothermal annealing from 175 deg. C to 250 deg. C was investigated by high resolution transmission electron microscopy (HRTEM). The native aluminum oxide film (∼5 nm thick) of the Al pad migrates towards the Cu ball during annealing. The formation of intermetallic compounds (IMC) is controlled by Cu diffusion, where the kinetics obey a parabolic growth law until complete consumption of the Al pad. The activation energies to initiate crystallization of CuAl 2 and Cu 9 Al 4 are 60.66 kJ mol -1 and 75.61 kJ mol -1 , respectively. During IMC development, Cu 9 Al 4 emerges as a second layer and grows together with the initial CuAl 2 . When Al is completely consumed, CuAl 2 transforms to Cu 9 Al 4 , which is the terminal product. Unlike the excessive void growth in Au-Al bonds, only a few voids nucleate in Cu-Al bonds after long-term annealing at high temperatures (e.g., 250 o C for 25 h), and their diameters are usually in the range of tens of nanometers. This is due to the lower oxidation rate and volumetric shrinkage of Cu-Al IMC compared with Au-Al IMC.

Calculation of Gibbs energy of Zr-Al-Ni, Zr-Al-Cu, Al-Ni-Cu and Zr-Al-Ni-Cu liquid alloys based on quasiregular solution model

International Nuclear Information System (INIS)

Li, H.Q.; Yang, Y.S.; Tong, W.H.; Wang, Z.Y.

2007-01-01

With the effects of electronic structure and atomic size being introduced, the mixing enthalpy as well as the Gibbs energy of the ternary Zr-Al-Cu, Ni-Al-Cu, Zr-Ni-Al and quaternary Zr-Al-Ni-Cu systems are calculated based on quasiregular solution model. The computed results agree well with the experimental data. The sequence of Gibbs energies of different systems is: G Zr-Al-Ni-Cu Zr-Al-Ni Zr-Al-Cu Cu-Al-Ni . To Zr-Al-Cu, Ni-Al-Cu and Zr-Ni-Al, the lowest Gibbs energy locates in the composition range of X Zr 0.39-0.61, X Al = 0.38-0.61; X Ni = 0.39-0.61, X Al = 0.38-0.60 and X Zr = 0.32-0.67, X Al = 0.32-0.66, respectively. And to the Zr-Ni-Al-Cu system with 66.67% Zr, the lowest Gibbs energy is obtained in the region of X Al = 0.63-0.80, X Ni = 0.14-0.24

Magnetic pinning-effect in Nd0.7Ca0.3MnO3/YBa2Cu3O7 bilayer

International Nuclear Information System (INIS)

Hsu, Daniel; Lin, J.G.; Wu, W.F.

2007-01-01

The vortex lines of superconductor can be driven by electrical currents, which are often coupled with a reliable control of flux quanta movement by defects or magnetic domains. In this work, the magnetic pinning-effect in Nd 0.7 Ca 0.3 MnO 3 /YBa 2 Cu 3 O 7 (NCMO/YBCO) bilayers is investigated. It is found that by increasing the field from 0 to 5 Tesla, the critical current I c of pure YBCO film at 50 K is suppressed by three orders of magnitude. However, in the NCMO/YBCO bilayer I c is less sensitive to the field and maintains at the level of 100 mA at high field. This result indicates that the magnetic pinning effect of NCMO is much more efficient than the conventional routes, which maybe related to the fine domain structure of NCMO film. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Superhard behaviour, low residual stress, and unique structure in diamond-like carbon films by simple bilayer approach

International Nuclear Information System (INIS)

Dwivedi, Neeraj; Kumar, Sushil; Malik, Hitendra K.

2012-01-01

Simple bilayer approach is proposed for synthesizing hard and superhard diamond-like carbon (DLC) coatings with reduced residual stress. For this, M/DLC bilayer (M = Ti and Cu) structures are grown using hybrid system involving radio frequency (RF)-sputtering and RF-plasma enhanced chemical vapor deposition techniques. Ti/DLC bilayer deposited at negative self bias of 100 V shows superhard behaviour with hardness (H) as 49 GPa. Cu/DLC bilayer grown at self bias of 100 V exhibits hard behaviour with H as 22.8 GPa. The hardness of Ti/DLC (Cu/DLC) bilayer gets changed from superhard (hard) to hard (moderate hard) regime, when the self bias is raised to 300 V. Residual stress in Ti/DLC (Cu/DLC) bilayer is found to be significantly low that varies in the range of 1 GPa-1.65 GPa (0.8 GPa-1.6 GPa). The microstructure and morphology are studied by Raman spectroscopy, scanning electron microscopy (SEM), and atomic force microscopy (AFM). SEM and AFM pictures reveal the creation of nanostructured features in the deposited bilayers. Raman, SEM, and AFM analyses are correlated with the nano-mechanical properties. Owing to excellent nano-mechanical properties, these bilayers can find their direct industrial applications as hard and protective coatings.

Self-forming Al oxide barrier for nanoscale Cu interconnects created by hybrid atomic layer deposition of Cu–Al alloy

Energy Technology Data Exchange (ETDEWEB)

Park, Jae-Hyung; Han, Dong-Suk; Kang, You-Jin [Division of Nanoscale Semiconductor Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Shin, So-Ra; Park, Jong-Wan, E-mail: jwpark@hanyang.ac.kr [Division of Materials Science and Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of)

2014-01-15

The authors synthesized a Cu–Al alloy by employing alternating atomic layer deposition (ALD) surface reactions using Cu and Al precursors, respectively. By alternating between these two ALD surface chemistries, the authors fabricated ALD Cu–Al alloy. Cu was deposited using bis(1-dimethylamino-2-methyl-2-butoxy) copper as a precursor and H{sub 2} plasma, while Al was deposited using trimethylaluminum as the precursor and H{sub 2} plasma. The Al atomic percent in the Cu–Al alloy films varied from 0 to 15.6 at. %. Transmission electron microscopy revealed that a uniform Al-based interlayer self-formed at the interface after annealing. To evaluate the barrier properties of the Al-based interlayer and adhesion between the Cu–Al alloy film and SiO{sub 2} dielectric, thermal stability and peel-off adhesion tests were performed, respectively. The Al-based interlayer showed similar thermal stability and adhesion to the reference Mn-based interlayer. Our results indicate that Cu–Al alloys formed by alternating ALD are suitable seed layer materials for Cu interconnects.

Self-forming Al oxide barrier for nanoscale Cu interconnects created by hybrid atomic layer deposition of Cu–Al alloy

International Nuclear Information System (INIS)

Park, Jae-Hyung; Han, Dong-Suk; Kang, You-Jin; Shin, So-Ra; Park, Jong-Wan

2014-01-01

The authors synthesized a Cu–Al alloy by employing alternating atomic layer deposition (ALD) surface reactions using Cu and Al precursors, respectively. By alternating between these two ALD surface chemistries, the authors fabricated ALD Cu–Al alloy. Cu was deposited using bis(1-dimethylamino-2-methyl-2-butoxy) copper as a precursor and H 2 plasma, while Al was deposited using trimethylaluminum as the precursor and H 2 plasma. The Al atomic percent in the Cu–Al alloy films varied from 0 to 15.6 at. %. Transmission electron microscopy revealed that a uniform Al-based interlayer self-formed at the interface after annealing. To evaluate the barrier properties of the Al-based interlayer and adhesion between the Cu–Al alloy film and SiO 2 dielectric, thermal stability and peel-off adhesion tests were performed, respectively. The Al-based interlayer showed similar thermal stability and adhesion to the reference Mn-based interlayer. Our results indicate that Cu–Al alloys formed by alternating ALD are suitable seed layer materials for Cu interconnects

First-principles investigation of the structure and synergistic chemical bonding of Ag and Mg at the Al | Ω interface in a Al-Cu-Mg-Ag alloy

International Nuclear Information System (INIS)

Sun Lipeng; Irving, Douglas L.; Zikry, Mohammed A.; Brenner, D.W.

2009-01-01

Density functional theory was used to characterize the atomic structure and bonding of the Al | Ω interface in a Al-Cu-Mg-Ag alloy. The most stable interfacial structure was found to be connected by Al-Al bonds with a hexagonal Al lattice on the surface of the Ω phase sitting on the vacant hollow sites of the Al {1 1 1} matrix plane. The calculations predict that when substituted separately for Al at this interface, Ag and Mg do not enhance the interface stability through chemical bonding. Combining Ag and Mg, however, was found to chemically stabilize this interface, with the lowest-energy structure examined being a bi-layer with Ag atoms adjacent to the Al matrix and Mg adjacent to the Ω phase. This study provides an atomic arrangement for the interfacial bi-layer observed experimentally in this alloy.

Magnetic and structural study of Cu-doped TiO2 thin films

International Nuclear Information System (INIS)

Torres, C.E. Rodriguez; Golmar, F.; Cabrera, A.F.; Errico, L.; Navarro, A.M. Mudarra; Renteria, M.; Sanchez, F.H.; Duhalde, S.

2007-01-01

Transparent pure and Cu-doped (2.5, 5 and 10 at.%) anatase TiO 2 thin films were grown by pulsed laser deposition technique on LaAlO 3 substrates. The samples were structurally characterized by X-ray absorption spectroscopy and X-ray diffraction. The magnetic properties were measured using a SQUID. All films have a FM-like behaviour. In the case of the Cu-doped samples, the magnetic cycles are almost independent of the Cu concentration. Cu atoms are forming CuO and/or substituting Ti in TiO 2 . The thermal treatment in air promotes the CuO segregation. Since CuO is antiferromagnetic, the magnetic signals present in the films could be assigned to Cu substitutionally replacing cations in TiO 2

Development and characterization of bilayer films of FucoPol and chitosan.

Science.gov (United States)

Ferreira, Ana R V; Torres, Cristiana A V; Freitas, Filomena; Sevrin, Chantal; Grandfils, Christian; Reis, Maria A M; Alves, Vítor D; Coelhoso, Isabel M

2016-08-20

Bilayer films of FucoPol and chitosan were prepared and characterized in terms of optical, morphologic, hygroscopic, mechanical and barrier properties, to evaluate their potential application in food packaging. Bilayer films have shown dense and homogeneous layers, and presented enhanced properties when comparing to monolayer FucoPol films. Though, a high swelling degree in contact with liquid water (263.3%) and a high water vapour permeability (0.75×10(-11)mol/msPa), typical of polysaccharide films, was still observed. However, they presented a low permeability to O2 and CO2 (0.47×10(-16)molm/m(2)sPa and 5.8×10(-16)molm/m(2)sPa, respectively). Tensile tests revealed a flexible and resistant film with an elongation at break of 38% and an elastic modulus of 137MPa. The studied properties, in particular the excellent barrier to gases, impart these bilayer films potential to be used in packaging of low moisture content products, as well as in multilayered hydrophobic/hydrophilic/hydrophobic barriers for food products with a broader range of water content. Copyright © 2016 Elsevier Ltd. All rights reserved.

/Cu-Al System

Science.gov (United States)

Kish, Orel; Froumin, Natalya; Aizenshtein, Michael; Frage, Nachum

2014-05-01

Wettability and interfacial interaction of the Ta2O5/Cu-Al system were studied. Pure Cu does not wet the Ta2O5 substrate, and improved spreading is achieved when relatively a high fraction of the active element (~40 at.% Al) was added. The Al2O3 and AlTaO4 phases were observed at the Ta2O5/Cu-Al interface. A thermodynamic evaluation allowed us to suggest that the lack of wetting bellow 40 at.% Al is due to the presence of a native oxide, which covers the drop. The conditions of the native oxide decomposition and the formation of the volatile Al2O suboxide strongly depend on the vacuum level during sessile drop experiments and the composition of the Cu-Al alloy. In our case, Al contents greater than 40% provides thermodynamic conditions for the formation of Al2O (as a result of Al reaction with Al2O3) and the drop spreading. It was suggested that the final contact angle in the Ta2O5/Cu-Al system (50°) is determined by Ta adsorption on the newly formed alumina interlayer.

Preparation and Characterization of an Olive Flounder (Paralichthys olivaceus) Skin Gelatin and Polylactic Acid Bilayer Film.

Science.gov (United States)

Lee, Ka-Yeon; Song, Kyung Bin

2017-03-01

Olive flounder skin gelatin (OSG) was used as a film base material. A bilayer film of OSG and polylactic acid (PLA) was prepared using solvent casting method to enhance the film properties. Physical properties of the OSG-PLA film were increased compared with the nonaugmented OSG film. In particular, the PLA lamination decreased water vapor permeability from 2.17 to 0.92 × 10 -9 g·m/m 2 ·s·Pa, as well as of the water solubility from 16.62% to 9.27%, in the bilayer film relative to the OSG film. The oxygen permeability of the OSG-PLA bilayer film was held low by the OSG film, compensating for the high oxygen permeability of the PLA layer. Therefore, the OSG-PLA bilayer film with its enhanced physical properties and high water and oxygen barrier properties can be applied as a food packaging material. © 2017 Institute of Food Technologists®.

Cu2ZnSnS4 thin film solar cells from electroplated precursors: Novel low-cost perspective

International Nuclear Information System (INIS)

Ennaoui, A.; Lux-Steiner, M.; Weber, A.; Abou-Ras, D.; Koetschau, I.; Schock, H.-W.; Schurr, R.; Hoelzing, A.; Jost, S.; Hock, R.; Voss, T.; Schulze, J.; Kirbs, A.

2009-01-01

Thin-film solar cells based on Cu 2 ZnSnS 4 (CZTS) absorbers were fabricated successfully by solid-state reaction in H 2 S atmosphere of electrodeposited Cu-Zn-Sn precursors. These ternary alloys were deposited in one step from a cyanide-free alkaline electrolyte containing Cu(II), Zn (II) and Sn (IV) metal salts on Mo-coated glass substrates. The solar cell was completed by a chemical bath-deposited CdS buffer layer and a sputtered i-ZnO/ZnO:Al bilayer. The best solar cell performance was obtained with Cu-poor samples. A total area (0.5 cm 2 ) efficiency of 3.4% is achieved (V oc = 563 mV, j sc = 14.8 mA/cm 2 , FF = 41%) with a maximum external quantum efficiency (EQE) of 80%. The estimated band-gap energy from the external quantum efficiency (EQE) measurements is about 1.54 eV. Electron backscatter-diffraction maps of cross-section samples revealed CZTS grain sizes of up to 10 μm. Elemental distribution maps of the CZTS absorber show Zn-rich precipitates, probably ZnS, and a Zn-poor region, presumably Cu 2 SnS 3 , close to the interface Mo/CZTS

Raman Spectroscopy of DLC/a-Si Bilayer Film Prepared by Pulsed Filtered Cathodic Arc

Directory of Open Access Journals (Sweden)

C. Srisang

2012-01-01

Full Text Available DLC/a-Si bilayer film was deposited on germanium substrate. The a-Si layer, a seed layer, was firstly deposited on the substrate using DC magnetron sputtering and DLC layer was then deposited on the a-Si layer using pulsed filtered cathodic arc method. The bilayer films were deposited with different DLC/a-Si thickness ratios, including 2/2, 2/6, 4/4, 6/2, and 9/6. The effect of DLC/a-Si thickness ratios on the sp3 content of DLC was analyzed by Raman spectroscopy. The results show that a-Si layer has no effect on the structure of DLC film. Furthermore, the upper shift in G wavenumber and the decrease in ID/IG inform that sp3 content of the film is directly proportional to DLC thickness. The plot modified from the three-stage model informed that the structural characteristics of DLC/a-Si bilayer films are located close to the tetrahedral amorphous carbon. This information may be important for analyzing and developing bilayer protective films for future hard disk drive.

Nanoporous Al sandwich foils using size effect of Al layer thickness during Cu/Al/Cu laminate rolling

Science.gov (United States)

Yu, Hailiang; Lu, Cheng; Tieu, A. Kiet; Li, Huijun; Godbole, Ajit; Kong, Charlie

2018-06-01

The roll bonding technique is one of the most widely used methods to produce metal laminate sheets. Such sheets offer interesting research opportunities for both scientists and engineers. In this paper, we report on an experimental investigation of the 'thickness effect' during laminate rolling for the first time. Using a four-high multifunction rolling mill, Cu/Al/Cu laminate sheets were fabricated with a range of thicknesses (16, 40, 70 and 130 μm) of the Al layer. The thickness of the Cu sheets was a constant 300 μm. After rolling, TEM images show good bonding quality between the Cu and Al layers. However, there are many nanoscale pores in the Al layer. The fraction of nanoscale pores in the Al layer increases with a reduction in the Al layer thickness. The finite element method was used to simulate the Cu/Al/Cu rolling process. The simulation results reveal the effect of the Al layer thickness on the deformation characteristics of the Cu/Al/Cu laminate. Finally, we propose that the size effect of the Al layer thickness during Cu/Al/Cu laminate rolling may offer a method to fabricate 'nanoporous' Al sandwich laminate foils. Such foils can be used in electromagnetic shielding of electrical devices and noisy shielding of building.

Quantitative TEM analysis of Al/Cu multilayer systems prepared by pulsed laser deposition

DEFF Research Database (Denmark)

Liu, Haihua; Pryds, Nini; Schou, Jørgen

2010-01-01

Thin films composed of alternating Al/Cu/Al layers were deposited on a (111) Si substrate using pulsed laser deposition (PLD). The thicknesses of the film and the individual layers, and the detailed internal structure within the layers were characterized by means of transmission electron microscopy...... for the formation of the first layer of nano-sized Al grains. The results demonstrate that the PLD technique is a powerful tool to produce nano-scale multilayered metal films with controllable thickness and grain sizes....... (TEM), high-resolution TEM (HRTEM), and energy-filtered TEM (EFTEM). Each Al or Cu layer consists of a single layer of nano-sized grains of different orientations. EFTEM results revealed a layer of oxide about 2 nm thick on the surface of the Si substrate, which is considered to be the reason...

Study of Sb/SnO{sub 2} bi-layer films prepared by ion beam sputtering deposition technique

Energy Technology Data Exchange (ETDEWEB)

Wang, Chun-Min [Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan, ROC (China); Huang, Chun-Chieh [Department of Electrical Engineering, Cheng Shiu University, No. 840, Chengcing Road, Niaosong Township, Kaohsiung 833, Taiwan, ROC (China); Kuo, Jui-Chao [Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan, ROC (China); Huang, Jow-Lay, E-mail: jlh888@mail.ncku.edu.tw [Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan, ROC (China); Department of Chemical and Materials Engineering, National University of Kaohsiung, Kaohsiung 811, Taiwan, ROC (China); Research Center for Energy Technology and Strategy, National Cheng Kung University, Tainan 701, Taiwan, ROC (China)

2014-11-03

In the present work, bi-layer thin films of Sb/SnO{sub 2} were produced on unheated glass substrates using ion beam sputtering (IBS) technique without post annealing treatment. The thickness of Sb layers was varied from 2 to 10 nm and the Sb layers were deposited on SnO{sub 2} layers having thicknesses of 40 nm to 115 nm. The effect of thickness was studied on the morphological, electrical and optical properties. The Sb/SnO{sub 2} bi-layer resulted in lowering the electrical resistivity as well as reducing the optical transmittance. However, the optical and electrical properties of the bi-layer films were mainly influenced by the thickness of Sb layers due to progressive transfer in structures from aggregate to continuous films. The bi-layer films show the electrical resistivity of 1.4 × 10{sup −3} Ω cm and an optical transmittance of 26% for Sb film having 10 nm thickness. - Highlights: • Bi-layer Sb/SnO{sub 2} structures were synthesized by ion beam sputtering (IBS) technique. • The 6 nm-thick Sb film is a transition region in this study. • The conductivity of the bi-layer films is increased as Sb thickness increases. • The transmittance of the bi-layer films is decreased as Sb thickness increases.

High power density thin film SOFCs with YSZ/GDC bilayer electrolyte

International Nuclear Information System (INIS)

Cho, Sungmee; Kim, YoungNam; Kim, Jung-Hyun; Manthiram, Arumugam; Wang Haiyan

2011-01-01

Graphical abstract: . A: Cross-sectional TEM images show a GDC single layer and YSZ/GDC bilayer electrolyte structures. As clearly observed from TEM images, the YSZ interlayer thickness varies from ∼330 nm to ∼1 μm. B: The cell with the bilayer electrolyte (YSZ ∼330 nm) doubles the overall power output at 750 deg. C compared to that achieved in the GDC single layer cell. Display Omitted Highlights: → YSZ/ GDC bilayer thin film electrolytes were deposited by a pulsed laser deposition (PLD) technique. → Thin YSZ film as a blocking layer effectively suppresses the cell voltage drop without reducing the ionic conductivity of the electrolyte layer. → The YSZ/ GDC bilayer structure presents a feasible architecture for enhancing the overall power density and enabling chemical, mechanical, and structural stability in the cells. - Abstract: Bilayer electrolytes composed of a gadolinium-doped CeO 2 (GDC) layer (∼6 μm thickness) and an yttria-stabilized ZrO 2 (YSZ) layer with various thicknesses (∼330 nm, ∼440 nm, and ∼1 μm) were deposited by a pulsed laser deposition (PLD) technique for thin film solid oxide fuel cells (TFSOFCs). The bilayer electrolytes were prepared between a NiO-YSZ (60:40 wt.% with 7.5 wt.% carbon) anode and La 0.5 Sr 0.5 CoO 3 -Ce 0.9 Gd 0.1 O 1.95 (50:50 wt.%) composite cathode for anode-supported single cells. Significantly enhanced maximum power density was achieved, i.e., a maximum power density of 188, 430, and 587 mW cm -2 was measured in a bilayer electrolyte single cell with ∼330 nm thin YSZ at 650, 700, and 750 deg. C, respectively. The cell with the bilayer electrolyte (YSZ ∼330 nm) doubles the overall power output at 750 deg. C compared to that achieved in the GDC single layer cell. This signifies that the YSZ thin film serves as a blocking layer for preventing electrical current leakage in the GDC layer and also provides chemical, mechanical, and structural integrity in the cell, which leads to the overall enhanced

Development and characterization of sugar palm starch and poly(lactic acid) bilayer films.

Science.gov (United States)

Sanyang, M L; Sapuan, S M; Jawaid, M; Ishak, M R; Sahari, J

2016-08-01

The development and characterization of environmentally friendly bilayer films from sugar palm starch (SPS) and poly(lactic acid) (PLA) were conducted in this study. The SPS-PLA bilayer films and their individual components were characterized for their physical, mechanical, thermal and water barrier properties. Addition of 50% PLA layer onto 50% SPS layer (SPS50-PLA50) increased the tensile strength of neat SPS film from 7.74 to 13.65MPa but reduced their elongation at break from 46.66 to 15.53%. The incorporation of PLA layer significantly reduced the water vapor permeability as well as the water uptake and solubility of bilayer films which was attributed to the hydrophobic characteristic of the PLA layer. Furthermore, scanning electron microscopy (SEM) image of SPS50-PLA50 revealed lack of strong interfacial adhesion between the SPS and PLA. Overall, the incorporation of PLA layer onto SPS films enhances the suitability of SPS based films for food packaging. Copyright © 2016 Elsevier Ltd. All rights reserved.

Effect of preparation conditions on the diffusion parameters of Cu/Ni thin films

Energy Technology Data Exchange (ETDEWEB)

Rammo, N.N.; Makadsi, M.N. [College of Science, Baghdad University, Baghdad (Iraq); Abdul-Lettif, A.M. [College of Science, Babylon University, Hilla (Iraq)

2004-11-01

Diffusion coefficients of vacuum-deposited Cu/Ni bilayer thin films were determined in the temperature range 200-500 C using X-ray photoelectron spectroscopy, sheet resistance measurements, and X-ray diffraction analysis. The difference between the results of the present work and those of previous relevant investigations may be attributed to the difference in the film microstructure, which is controlled by the preparation conditions. Therefore, the effects of deposition rate, substrate temperature, film thickness, and substrate structure on the diffusion parameters were separately investigated. It is shown that the diffusion activation energy (Q) decreases as deposition rate increases, whereas Q increases as substrate temperature and film thickness increase. The value of Q for films deposited on amorphous substrates is less than that for films deposited on single-crystal substrates. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Layered Cu-based electrode for high-dielectric constant oxide thin film-based devices

International Nuclear Information System (INIS)

Fan, W.; Saha, S.; Carlisle, J.A.; Auciello, O.; Chang, R.P.H.; Ramesh, R.

2003-01-01

Ti-Al/Cu/Ta multilayered electrodes were fabricated on SiO 2 /Si substrates by ion beam sputtering deposition, to overcome the problems of Cu diffusion and oxidation encountered during the high dielectric constant (κ) materials integration. The Cu and Ta layers remained intact through the annealing in oxygen environment up to 600 deg. C. The thin oxide layer, formed on the Ti-Al surface, effectively prevented the oxygen penetration toward underneath layers. Complex oxide (Ba x Sr 1-x )TiO 3 (BST) thin films were grown on the layered Ti-Al/Cu/Ta electrodes using rf magnetron sputtering. The deposited BST films exhibited relatively high permittivity (150), low dielectric loss (0.007) at zero bias, and low leakage current -8 A/cm 2 at 100 kV/cm

Wetting - Dewetting Transitions of Au/Ni Bilayer Films

Science.gov (United States)

Cen, Xi

Thin films deposited at low temperatures are often kinetically constrained and will dewet the underlying substrate when annealed. Solid state dewetting is driven by the minimization of the total free energy of thin film-substrate interface and free surface, and mostly occurs through surface diffusion. Dewetting is a serious concern in microelectronics reliability. However, it can also be utilized for the self-assembly of nanostructures with potentials in storage, catalysis, or transistors. Therefore, a fundamental understanding of the dewetting behavior of thin metal films is critical for improving the thermal stability of microelectronics and controlling the order of self-assembled nanostructures. Mechanisms for dewetting of single layer films have been studied extensively. However little work has been reported on multilayer or alloyed thin films. In the thesis, the solid state dewetting of Au/Ni bilayer films deposited on SiO2/Si substrates was investigated by scanning electron microscopy (SEM), transmission electron microscopy (TEM) and aberration corrected scanning TEM (STEM). Ex-situ SEM and TEM studies were performed with in-situ TEM heating characterization to identify the mechanisms during the dewetting process of Au/Ni bilayer films. The solid state dewetting of Au/Ni bilayer films from SiO2/Si substrates exhibits both homogeneous and localized dewetting of Ni and long-edge retraction for Au under isothermal annealing condition. The top Au layer retracts up to 1 mm from the edge of the substrate wafer to reduce the energetically unfavored Au/Ni interface. In contrast, Ni dewets and agglomerates locally due to its limited diffusivity compared to Au. Film morphology and local chemical composition varies significantly across hundreds of microns along the direction normal to the retracting edge. Besides long range edge receding, localized dewetting shows significant changes in film morphology and chemical distribution. Both Au and Ni shows texturing. Despite

Fabrication of high-quality single-crystal Cu thin films using radio-frequency sputtering.

Science.gov (United States)

Lee, Seunghun; Kim, Ji Young; Lee, Tae-Woo; Kim, Won-Kyung; Kim, Bum-Su; Park, Ji Hun; Bae, Jong-Seong; Cho, Yong Chan; Kim, Jungdae; Oh, Min-Wook; Hwang, Cheol Seong; Jeong, Se-Young

2014-08-29

Copper (Cu) thin films have been widely used as electrodes and interconnection wires in integrated electronic circuits, and more recently as substrates for the synthesis of graphene. However, the ultra-high vacuum processes required for high-quality Cu film fabrication, such as molecular beam epitaxy (MBE), restricts mass production with low cost. In this work, we demonstrated high-quality Cu thin films using a single-crystal Cu target and radio-frequency (RF) sputtering technique; the resulting film quality was comparable to that produced using MBE, even under unfavorable conditions for pure Cu film growth. The Cu thin film was epitaxially grown on an Al2O3 (sapphire) (0001) substrate, and had high crystalline orientation along the (111) direction. Despite the 10(-3) Pa vacuum conditions, the resulting thin film was oxygen free due to the high chemical stability of the sputtered specimen from a single-crystal target; moreover, the deposited film had >5× higher adhesion force than that produced using a polycrystalline target. This fabrication method enabled Cu films to be obtained using a simple, manufacturing-friendly process on a large-area substrate, making our findings relevant for industrial applications.

Stability of Tl-Ba-Ca-Cu-O superconducting thin films

International Nuclear Information System (INIS)

Siegal, M. P.; Overmyer, D. L.; Venturini, E. L.; Padilla, R. R.; Provencio, P. N.

1999-01-01

We report the stability of TlBa 2 CaCu 2 O 7 and Tl 2 Ba 2 CaCu 2 O 8 on LaAlO 3 (100) epitaxial thin films, under a variety of conditions. All films are stable in acetone and methanol and with repeated thermal cycling to cryogenic temperatures. Moisture, especially vapor, degrades film quality rapidly. These materials are stable to high temperatures in either N 2 or O 2 ambients. While total degradation, resulting from Tl depletion, occurs at the same temperatures for both phases, 600 degree sign C in N 2 and 700 degree sign C in O 2 , the onset of degradation occurs at somewhat lower temperatures for TlBa 2 CaCu 2 O 7 than for Tl 2 Ba 2 CaCu 2 O 8 . (c) 1999 Materials Research Society

Intermetallic Compound Growth and Stress Development in Al-Cu Diffusion Couple

Science.gov (United States)

Mishler, M.; Ouvarov-Bancalero, V.; Chae, Seung H.; Nguyen, Luu; Kim, Choong-Un

2018-01-01

This paper reports experimental observations evidencing that the intermetallic compound phase interfaced with Cu in the Al-Cu diffusion couple is most likely α2-Cu3Al phase, not γ-Cu9Al4 phase as previously assumed, and that its growth to a critical thickness may result in interface failure by stress-driven fracture. These conclusions are made based on an interdiffusion study of a diffusion couple made of a thick Cu plate coated with ˜ 2- μm-thick Al thin film. The interface microstructure and lattice parameter were characterized using scanning electron microscopy and x-ray diffraction analysis. Specimens aged at temperature between 623 K (350°C) and 723 K (450°C) for various hours produced consistent results supporting the main conclusions. It is found that disordered α2-Cu3Al phase grows in a similar manner to solid-state epitaxy, probably owing to its structural similarity to the Cu lattice. The increase in the interface strain that accompanies the α2-Cu3Al phase growth ultimately leads to interface fracture proceeding from crack initiation and growth along the interface. This mechanism provides the most consistent explanation for interface failures observed in other studies.

Magnetic and structural study of Cu-doped TiO{sub 2} thin films

Energy Technology Data Exchange (ETDEWEB)

Torres, C.E. Rodriguez [Dpto de Fisica-IFLP, Fac. Cs. Exactas, Universidad Nacional de La Plata-CONICET, CC 67, 1900 La Plata (Argentina)], E-mail: torres@fisica.unlp.edu.ar; Golmar, F. [Laboratorio de Ablacion Laser, Facultad de Ingenieria, Universidad de Buenos Aires, Paseo Colon 850, 1063 Buenos Aires (Argentina); Cabrera, A.F.; Errico, L.; Navarro, A.M. Mudarra; Renteria, M.; Sanchez, F.H. [Dpto de Fisica-IFLP, Fac. Cs. Exactas, Universidad Nacional de La Plata-CONICET, CC 67, 1900 La Plata (Argentina); Duhalde, S. [Laboratorio de Ablacion Laser, Facultad de Ingenieria, Universidad de Buenos Aires, Paseo Colon 850, 1063 Buenos Aires (Argentina)

2007-10-31

Transparent pure and Cu-doped (2.5, 5 and 10 at.%) anatase TiO{sub 2} thin films were grown by pulsed laser deposition technique on LaAlO{sub 3} substrates. The samples were structurally characterized by X-ray absorption spectroscopy and X-ray diffraction. The magnetic properties were measured using a SQUID. All films have a FM-like behaviour. In the case of the Cu-doped samples, the magnetic cycles are almost independent of the Cu concentration. Cu atoms are forming CuO and/or substituting Ti in TiO{sub 2}. The thermal treatment in air promotes the CuO segregation. Since CuO is antiferromagnetic, the magnetic signals present in the films could be assigned to Cu substitutionally replacing cations in TiO{sub 2}.

Giant secondary grain growth in Cu films on sapphire

Directory of Open Access Journals (Sweden)

David L. Miller

2013-08-01

Full Text Available Single crystal metal films on insulating substrates are attractive for microelectronics and other applications, but they are difficult to achieve on macroscopic length scales. The conventional approach to obtaining such films is epitaxial growth at high temperature using slow deposition in ultrahigh vacuum conditions. Here we describe a different approach that is both simpler to implement and produces superior results: sputter deposition at modest temperatures followed by annealing to induce secondary grain growth. We show that polycrystalline as-deposited Cu on α-Al2O3(0001 can be transformed into Cu(111 with centimeter-sized grains. Employing optical microscopy, x-ray diffraction, and electron backscatter diffraction to characterize the films before and after annealing, we find a particular as-deposited grain structure that promotes the growth of giant grains upon annealing. To demonstrate one potential application of such films, we grow graphene by chemical vapor deposition on wafers of annealed Cu and obtain epitaxial graphene grains of 0.2 mm diameter.

Comparative study of Cu-Zr and Cu-Ru alloy films for barrier-free Cu metallization

International Nuclear Information System (INIS)

Wang Ying; Cao Fei; Zhang Milin; Liu Yuntao

2011-01-01

The properties of Cu-Zr and Cu-Ru alloy films were comparatively studied to evaluate their potential use as alloying elements. Cu alloy films were deposited on SiO 2 /Si substrates by magnetron sputtering. Samples were subsequently annealed and analyzed by four-point probe measurement, X-ray diffraction, X-ray photoelectron spectroscopy, transmission electron microscopy and Auger electron spectroscopy. X-ray diffraction data suggest that Cu film has preferential (111) crystal orientation and no extra peak corresponding to any compound of Cu, Zr, Ru, and Si. According to transmission electron microscopy results, Cu grains grow in size for both systems but the grain sizes of the Cu alloy films are smaller than that of pure Cu films. These results indicate that Cu-Zr film is suitable for advanced barrier-free metallization in terms of interfacial stability and lower resistivity.

Chemical solution deposition of CaCu3Ti4O12 thin film

Indian Academy of Sciences (India)

Administrator

CaCu3Ti4O12; thin film; chemical solution deposition; dielectric properties. 1. Introduction. The CaCu3Ti4O12. (CCTO) compound has recently attracted considerable ... and Kelvin probe force microscopy (Chung et al 2004). Intrinsic .... SEM images of CCTO thin films as a function of sintering temperature. silicon based ...

Barrier effect of AlN film in flexible Cu(In,Ga)Se{sub 2} solar cells on stainless steel foil and solar cell

Energy Technology Data Exchange (ETDEWEB)

Li, Boyan; Li, Jianjun [Institute of Photo-electronic Thin Film Devices and Technology, Key Laboratory of Photo-electronic Thin Film Devices and Technology of Tianjin, Nankai University, Tianjin 300071 (China); Wu, Li [The MOE Key Laboratory of Weak-Light Nonlinear Photonics, School of Physics, Nankai University, Tianjin 300071 (China); Liu, Wei; Sun, Yun [Institute of Photo-electronic Thin Film Devices and Technology, Key Laboratory of Photo-electronic Thin Film Devices and Technology of Tianjin, Nankai University, Tianjin 300071 (China); Zhang, Yi, E-mail: yizhang@nankai.edu.cn [Institute of Photo-electronic Thin Film Devices and Technology, Key Laboratory of Photo-electronic Thin Film Devices and Technology of Tianjin, Nankai University, Tianjin 300071 (China)

2015-04-05

Highlights: • The adhension between AlN film and Mo are verygood. • AlN film can be effectively used as the barrier of flexible CIGS solar cell on SS substrate. • AlN film is suitable as the insulation barrier of flexible CIGS solar cell on SS substrate. - Abstract: The AlN film deposited by DC magnetron sputtering on stainless steel (SS) foils was used as the barrier in flexible Cu(In,Ga)Se{sub 2} (CIGS) solar cells on stainless steel foil and characterized comprehensively by X-ray diffraction (XRD), scanning electron microscopy (SEM), I–V, and QE measurements study. The study of AlN as insulation barrier in the flexible CIGS solar cell showed that the adhesion strength between the SS foil and the deposited AlN film was very strong even after annealing at high temperature at 530 °C. More importantly, a high resistance of over 10 MΩ was remained with the film with thickness of around 200 nm after annealing. This indicates that the AlN film is suitable as an effective insulation barrier in flexible CIGS solar cells based on SS foil. In addition, the XRD and SEM results showed that the AlN film did not influence the crystal structure of the Mo film which was deposited upon the AlN layer and used as the electrical contact in CIGS solar cells. It was found that the AlN film contributed to an improved crystallinity of the Mo contact layer compared to the bare SS foil. The combined results of secondary ion mass spectrometry, I–V and EQE measurements of the corresponding flexible CIGS solar cells confirmed that 1 μm-thick AlN film could be used as an efficient barrier layer in CIGS solar cells on SS foil.

Fabrication and nano-imprintabilities of Zr-, Pd- and Cu-based glassy alloy thin films

International Nuclear Information System (INIS)

Takenaka, Kana; Saidoh, Noriko; Nishiyama, Nobuyuki; Inoue, Akihisa

2011-01-01

With the aim of investigating nano-imprintability of glassy alloys in a film form, Zr 49 Al 11 Ni 8 Cu 32 , Pd 39 Cu 29 Ni 13 P 19 and Cu 38 Zr 47 Al 9 Ag 6 glassy alloy thin films were fabricated on Si substrate by a magnetron sputtering method. These films exhibit a very smooth surface, a distinct glass transition phenomenon and a large supercooled liquid region of about 80 K, which are suitable for imprinting materials. Moreover, thermal nano-imprintability of these obtained films is demonstrated by using a dot array mold with a dot diameter of 90 nm. Surface observations revealed that periodic nano-hole arrays with a hole diameter of 90 nm were successfully imprinted on the surface of these films. Among them, Pd-based glassy alloy thin film indicated more precise pattern imprintability, namely, flatter residual surface plane and sharper hole edge. It is said that these glassy alloy thin films, especially Pd-based glassy alloy thin film, are one of the promising materials for fabricating micro-machines and nano-devices by thermal imprinting.

Cu{sub 2}ZnSnS{sub 4} thin film solar cells from electroplated precursors: Novel low-cost perspective

Energy Technology Data Exchange (ETDEWEB)

Ennaoui, A. [Helmholtz-Zentrum Berlin fuer Materialien und Energie GmbH, Solar Energy Division, Glienickerstrasse 100, D-14109 Berlin (Germany)], E-mail: ennaoui@helmholtz-berlin.de; Lux-Steiner, M.; Weber, A.; Abou-Ras, D.; Koetschau, I.; Schock, H.-W. [Helmholtz-Zentrum Berlin fuer Materialien und Energie GmbH, Solar Energy Division, Glienickerstrasse 100, D-14109 Berlin (Germany); Schurr, R.; Hoelzing, A.; Jost, S.; Hock, R. [Crystallography and Structural Physics, University of Erlangen-Nuernberg, Staudtstrasse 3, D-91058 Erlangen (Germany); Voss, T.; Schulze, J.; Kirbs, A. [Atotech Deutschland GmbH, Erasmusstr. 20, D-10553 Berlin (Germany)

2009-02-02

Thin-film solar cells based on Cu{sub 2}ZnSnS{sub 4} (CZTS) absorbers were fabricated successfully by solid-state reaction in H{sub 2}S atmosphere of electrodeposited Cu-Zn-Sn precursors. These ternary alloys were deposited in one step from a cyanide-free alkaline electrolyte containing Cu(II), Zn (II) and Sn (IV) metal salts on Mo-coated glass substrates. The solar cell was completed by a chemical bath-deposited CdS buffer layer and a sputtered i-ZnO/ZnO:Al bilayer. The best solar cell performance was obtained with Cu-poor samples. A total area (0.5 cm{sup 2}) efficiency of 3.4% is achieved (V{sub oc} = 563 mV, j{sub sc} = 14.8 mA/cm{sup 2}, FF = 41%) with a maximum external quantum efficiency (EQE) of 80%. The estimated band-gap energy from the external quantum efficiency (EQE) measurements is about 1.54 eV. Electron backscatter-diffraction maps of cross-section samples revealed CZTS grain sizes of up to 10 {mu}m. Elemental distribution maps of the CZTS absorber show Zn-rich precipitates, probably ZnS, and a Zn-poor region, presumably Cu{sub 2}SnS{sub 3}, close to the interface Mo/CZTS.

Rapid thermal annealing of FePt and FePt/Cu thin films

Energy Technology Data Exchange (ETDEWEB)

Brombacher, Christoph

2011-01-10

Chemically ordered FePt is one of the most promising materials to reach the ultimate limitations in storage density of future magnetic recording devices due to its high uniaxial magnetocrystalline anisotropy and a corrosion resistance superior to rare-earth based magnets. In this study, FePt and FePt/Cu bilayers have been sputter deposited at room temperature onto thermally oxidized silicon wafers, glass substrates and self-assembled arrays of spherical SiO{sub 2} particles with diameters down to 10 nm. Millisecond flash lamp annealing, as well as conventional rapid thermal annealing was employed to induce the phase transformation from the chemically disordered A1 phase into the chemically ordered L1{sub 0} phase. The influence of the annealing temperature, annealing time and the film thickness on the ordering transformation and (001) texture evolution of FePt films with near equiatomic composition was studied. Whereas flash lamp annealed FePt films exhibit a polycrystalline morphology with high chemical L1{sub 0} order, rapid thermal annealing can lead to the formation of chemically ordered FePt films with (001) texture on amorphous SiO{sub 2}/Si substrates. The resultant high perpendicular magnetic anisotropy and large coercivities up to 40 kOe are demonstrated. Simultaneously to the ordering transformation, rapid thermal annealing to temperatures exceeding 600 C leads to a break up of the continuous FePt film into separated islands. This dewetting behavior was utilized to create regular arrays of FePt nanostructures on SiO{sub 2} particle templates with periods down to 50 nm. The addition of Cu improves the (001) texture formation and chemical ordering for annealing temperatures T{sub a} {<=}600 C. In addition, the magnetic anisotropy and the coercivity of the ternary FePtCu alloy can be effectively tailored by adjusting the Cu content. The prospects of FePtCu based exchange spring media, as well as the magnetic properties of FePtCu nanostructures fabricated

Elastocaloric effect in CuAlZn and CuAlMn shape memory alloys under compression

OpenAIRE

Qian, Suxin; Geng, Yunlong; Wang, Yi; Pillsbury, Thomas E.; Hada, Yoshiharu; Yamaguchi, Yuki; Fujimoto, Kenjiro; Hwang, Yunho; Radermacher, Reinhard; Cui, Jun; Yuki, Yoji; Toyotake, Koutaro; Takeuchi, Ichiro

2016-01-01

This paper reports the elastocaloric effect of two Cu-based shape memory alloys: Cu68Al16Zn16 (CuAlZn) and Cu73Al15Mn12 (CuAlMn), under compression at ambient temperature. The compression tests were conducted at two different rates to approach isothermal and adiabatic conditions. Upon unloading at a strain rate of 0.1 s−1 (adiabatic condition) from 4% strain, the highest adiabatic temperature changes (ΔTad) of 4.0 K for CuAlZn and 3.9 K for CuAlMn were obtained. The maximum stress and hystere...

Development and characterization of novel antimicrobial bilayer films based on Polylactic acid (PLA)/Pickering emulsions.

Science.gov (United States)

Zhu, Jun-You; Tang, Chuan-He; Yin, Shou-Wei; Yang, Xiao-Quan

2018-02-01

Biodegradable food packaging is sustainable and has a great application prospect. PLA is a promising alternative for petroleum-derived polymers. However, PLA packaging suffers from poor barrier properties compared with petroleum-derived ones. To address this issue, we designed bilayer films based on PLA and Pickering emulsions. The formed bilayer films were compact and uniform and double layers were combined firmly. This strategy enhanced mechanical resistance, ductility and moisture barrier of Pickering emulsion films, and concomitantly enhanced the oxygen barrier for PLA films. Thymol loadings in Pickering emulsion layer endowed them with antimicrobial and antioxidant activity. The release profile of thymol was well fitted with Fick's second law. The antimicrobial activity of the films depended on film types, and Pickering emulsion layer presented larger inhibition zone than PLA layer, hinting that the films possessed directional releasing role. This study opens a promising route to fabricate bilayer architecture creating synergism of each layer. Copyright © 2017 Elsevier Ltd. All rights reserved.

Structure, microstructure and determination of optical constants from transmittance data of co-doped Zn0.90Co0.05M0.05O (M=Al, Cu, Cd, Na) films

International Nuclear Information System (INIS)

2 A Laboratoire des Structures, Propriétés et Interactions Inter Atomiques, Université Abbes Laghrour, Khenchela 40000 (Algeria))" data-affiliation=" (LASPI2 A Laboratoire des Structures, Propriétés et Interactions Inter Atomiques, Université Abbes Laghrour, Khenchela 40000 (Algeria))" >Roguai, S.; 2 A Laboratoire des Structures, Propriétés et Interactions Inter Atomiques, Université Abbes Laghrour, Khenchela 40000 (Algeria))" data-affiliation=" (LASPI2 A Laboratoire des Structures, Propriétés et Interactions Inter Atomiques, Université Abbes Laghrour, Khenchela 40000 (Algeria))" >Djelloul, A.; Nouveau, Corinne; Souier, T.; Dakhel, A.A.; Bououdina, M.

2014-01-01

Highlights: • A series of Zn 0.90 Co 0.05 M 0.05 O (M=Al, Cu, Cd, Na) films has been prepared. • Thin films of these prepared samples have been deposited using USP technique. • Absorption of electronic transition has been used to fit the transmittance data. • Optical and dispersion parameters have been determined. - Abstract: ZnO, Zn 0.95 Co 0.05 O and Zn 0.90 Co 0.05 M 0.05 O (M=Al, Cd, Na, Cu) single phase films have been successfully synthesized by ultrasonic spray pyrolysis technique. Structural analysis by X-ray diffraction show that all the films have hexagonal wurtzite structure with an average crystallite size in the range of 19–25 nm. SEM analysis revealed that Cd and Na preserve the shape of nanopetals observed with ZnO or Co-ZnO films, while the doping with Al or Cu promote the formation of dense films constituted of nanorods. By the application of Levenberg–Marquardt least square method, the experimental transmittance data were fitted perfectly with the transmittance data calculated via a combination of Wemple–DiDomenico model, absorption coefficient of an electronic transition and Tauc–Urbach model. The concentration of absorbing centres N Co and oscillator strength f of d–d transition of Co 2+ ions are calculated from Smakula’s formula

Heterogeneous bilayer films NiFe (Fe)-Dy: magnetic circular dichroism and Dy spin ordering

Energy Technology Data Exchange (ETDEWEB)

Markov, V.V. E-mail: ise@iph.krasn.ruise@iph.krasnoyarsk.su; Kesler, V.G.; Khudyakov, A.E.; Edelman, I.S.; Bondarenko, G.V

2001-08-01

Results of the magnetic circular dichroism (MCD) and Auger electron spectroscopy (AES) investigations in the 3d transition metal-Dy bi-layer films are presented. It is shown that even at room temperature the Dy layer makes a contribution to MCD of the bi-layer film, which corresponds to the MCD value in the single-layer Dy film measured below T{sub C}=85 K. According to the AES data there is no sharp interface between 3d and Dy layers in these films. Some amount of Ni and Fe atoms is dispersed in the Dy layer and some amount of Dy atoms is dispersed in the 3d layer. The comparison of the MCD and AES data allows one to suppose the Dy layer in the bi-layer films to be magnetically ordered at room temperature under the influence of the 3d-layer spin system. The influence spreads to long distances inside Dy layer through the 3d-ions dispersed in it.

Heterogeneous bilayer films NiFe (Fe)-Dy: magnetic circular dichroism and Dy spin ordering

International Nuclear Information System (INIS)

Markov, V.V.; Kesler, V.G.; Khudyakov, A.E.; Edelman, I.S.; Bondarenko, G.V.

2001-01-01

Results of the magnetic circular dichroism (MCD) and Auger electron spectroscopy (AES) investigations in the 3d transition metal-Dy bi-layer films are presented. It is shown that even at room temperature the Dy layer makes a contribution to MCD of the bi-layer film, which corresponds to the MCD value in the single-layer Dy film measured below T C =85 K. According to the AES data there is no sharp interface between 3d and Dy layers in these films. Some amount of Ni and Fe atoms is dispersed in the Dy layer and some amount of Dy atoms is dispersed in the 3d layer. The comparison of the MCD and AES data allows one to suppose the Dy layer in the bi-layer films to be magnetically ordered at room temperature under the influence of the 3d-layer spin system. The influence spreads to long distances inside Dy layer through the 3d-ions dispersed in it

Stability of Tl-Ba-Ca-Cu-O superconducting thin films

Energy Technology Data Exchange (ETDEWEB)

Siegal, M. P. [Sandia National Laboratories, Albuquerque, New Mexico 87185-1421 (United States); Overmyer, D. L. [Sandia National Laboratories, Albuquerque, New Mexico 87185-1421 (United States); Venturini, E. L. [Sandia National Laboratories, Albuquerque, New Mexico 87185-1421 (United States); Padilla, R. R. [Sandia National Laboratories, Albuquerque, New Mexico 87185-1421 (United States); Provencio, P. N. [Sandia National Laboratories, Albuquerque, New Mexico 87185-1421 (United States)

1999-12-01

We report the stability of TlBa{sub 2}CaCu{sub 2}O{sub 7} and Tl{sub 2}Ba{sub 2}CaCu{sub 2}O{sub 8} on LaAlO{sub 3}(100) epitaxial thin films, under a variety of conditions. All films are stable in acetone and methanol and with repeated thermal cycling to cryogenic temperatures. Moisture, especially vapor, degrades film quality rapidly. These materials are stable to high temperatures in either N{sub 2} or O{sub 2} ambients. While total degradation, resulting from Tl depletion, occurs at the same temperatures for both phases, 600 degree sign C in N{sub 2} and 700 degree sign C in O{sub 2}, the onset of degradation occurs at somewhat lower temperatures for TlBa{sub 2}CaCu{sub 2}O{sub 7} than for Tl{sub 2}Ba{sub 2}CaCu{sub 2}O{sub 8}. (c) 1999 Materials Research Society.

Power losses in bilayer inverted small molecule organic solar cells

KAUST Repository

Trinh, Cong; Bakke, Jonathan R.; Brennan, Thomas P.; Bent, Stacey F.; Navarro, Francisco; Bartynski, Andrew; Thompson, Mark E.

2012-01-01

Inverted bilayer organic solar cells using copper phthalocyanine (CuPc) as a donor and C60 as an acceptor with the structure: glass/indium tin oxide (ITO)/ZnO/C60/CuPc/MoO3/Al, in which the zinc oxide (ZnO) was deposited by atomic layer deposition

Cu diffusion as an alternative method for nanopatterned CuTCNQ film growth

International Nuclear Information System (INIS)

Capitán, M J; Álvarez, J; Miranda, R; Navío, C

2016-01-01

In this paper we show by means of ‘in situ’ x-ray diffraction studies that CuTCNQ formation from Cu(solid)–TCNQ(solid tetracyanoquinodimethane) goes through Cu diffusion at room temperature. The film quality depends on the TCNQ evaporation rate. At low evaporation rate we get a single phase-I CuTCNQ film very well crystallized and well oriented. The film has a CuTCNQ(0 2 0) orientation. The film is formed by CuTCNQ nanorods of a very homogeneous size. The film homogeneity has also been seen by atomic force microscopy (AFM). The electronic properties of the film have been measured by x-ray photoelectron spectroscopy (XPS) and ultra-violet photoelectron spectroscopy (UPS). Thus, the Cu-diffusion method has arisen as a very simple, clean and efficient method to grow localized CuTCNQ nanorods on Cu, opening up new insights for technological applications. (paper)

Microstructure of epitaxial YBa2Cu3O7-x thin films grown on LaAlO3 (001)

International Nuclear Information System (INIS)

Hsieh, Y.; Siegal, M.P.; Hull, R.; Phillips, J.M.

1990-01-01

We report a microstructural investigation of the epitaxial growth of YBa 2 Cu 3 O 7-x (YBCO) thin films on LaAlO 3 (001) substrates using transmission electron microscopy (TEM). Epitaxial films grow with two distinct modes: c epitaxy (YBCO) single crystal with the c (axis normal to the surface and a epitaxy (YBCO) single crystal with the c axis in the interfacial plane), where c epitaxy is the dominant mode grown in all samples 35--200 nm thick. In 35 nm YBCO films annealed at 850 degree C, 97±1% of the surface area is covered by c epitaxy with embedded anisotropic a-epitaxial grains. Quantitative analysis reveals the effect of film thickness and annealing temperature on the density, grain sizes, areal coverages, and anisotropic growth of a epitaxy

(SiC/AlN)2 multilayer film as an effective protective coating for sintered NdFeB by magnetron sputtering

Science.gov (United States)

You, Yu; Li, Heqin; Huang, Yiqin; Tang, Qiong; Zhang, Jing; Xu, Jun

2017-08-01

SiC/AlN and (SiC/AlN)2 multilayer films with a well-arranged bilayer structure and a four-layer structure are prepared respectively on NdFeB substrates by a magnetron sputtering method. Crystal phase and microstructures of the SiC/AlN and (SiC/AlN)2 films are investigated using x-ray diffraction (XRD), field-emission scanning electron microscope (FESEM) and atomic force microscope (AFM). It is observed that the surface of the (SiC/AlN)2 four-layer film is much denser and smoother than that of the SiC/AlN bilayer film. Corrosion behaviors of the NdFeB substrates coated with SiC/AlN and (SiC/AlN)2 films as well as the bare NdFeB substrate are evaluated by potentiodynamic polarization curve tests. It is revealed that the lateral growth structures developed in interfaces are favorable for an enhanced corrosion resistance. Corrosion current densities of the (SiC/AlN)2 coated NdFeB measured in acid, alkali and salt solutions are 2.796  ×  10-9, 3.65  ×  10-6, and 2.912  ×  10-6 A cm-2, respectively, which are much lower than those of the bare NdFeB and the SiC/AlN coated NdFeB.

Impact of ac/dc spark anodizing on the corrosion resistance of Al-Cu alloys

Energy Technology Data Exchange (ETDEWEB)

Alsrayheen, Enam, E-mail: ealsrayh@ucalgary.ca [Department of Chemistry, University of Calgary, 2500 University Drive NW, Calgary AB, T2N 1N4 (Canada); McLeod, Eric, E-mail: hmolero@ucalgary.ca [Department of Chemistry, University of Calgary, 2500 University Drive NW, Calgary AB, T2N 1N4 (Canada); Rateick, Richard, E-mail: richard.rateick@honeywell.com [Department of Chemistry, University of Calgary, 2500 University Drive NW, Calgary AB, T2N 1N4 (Canada); Molero, Hebert, E-mail: Eric.McLeod@stmu.ab.ca [Department of Chemistry, University of Calgary, 2500 University Drive NW, Calgary AB, T2N 1N4 (Canada); Birss, Viola, E-mail: birss@ucalgary.ca [Department of Chemistry, University of Calgary, 2500 University Drive NW, Calgary AB, T2N 1N4 (Canada)

2011-07-01

An ac/dc spark anodization method was used to deposit an oxide film (6 {+-} 3 {mu}m in thickness) on the Al-Cu alloy AA2219. The oxide films were formed at 10 mA/cm{sup 2} for 30 min in an alkaline silicate solution, showing three main stages of growth. Scanning electron microscopy and electron microprobe analysis revealed that the oxide films are not uniform and consist of three main layers, an inner Al-rich barrier layer ({approx}1 {mu}m), an intermediate Al-Si mixed oxide layer ({approx}2 {+-} 1 {mu}m), and an outer porous Si-rich layer ({approx}3 {+-} 3 {mu}m). In addition, microscopic analysis showed that the Al{sub 2}Cu intermetallics present in the alloy have not been excessively oxidized during the anodization process and thus are retained beneath the oxide film, as desired. The coating passivity and corrosion resistance, evaluated using linear sweep voltammetry (LSV) in pH 7 borate buffer solution and electrochemical impedance spectroscopy (EIS) in 0.86 M NaCl solution, respectively, were both significantly improved after spark-anodization.

Nucleation and Growth of Cu-Al Intermetallics in Al-Modified Sn-Cu and Sn-Ag-Cu Lead-Free Solder Alloys

Science.gov (United States)

Reeve, Kathlene N.; Anderson, Iver E.; Handwerker, Carol A.

2015-03-01

Lead-free solder alloys Sn-Cu (SC) and Sn-Ag-Cu (SAC) are widely used by the microelectronics industry, but enhanced control of the microstructure is needed to improve solder performance. For such control, nucleation and stability of Cu-Al intermetallic compound (IMC) solidification catalysts were investigated by variation of the Cu (0.7-3.0 wt.%) and Al (0.0-0.4 wt.%) content of SC + Al and SAC + Al alloys, and of SAC + Al ball-grid array (BGA) solder joints. All of the Al-modified alloys produced Cu-Al IMC particles with different morphologies and phases (occasionally non-equilibrium phases). A trend of increasing Cu-Al IMC volume fraction with increasing Al content was established. Because of solidification of non-equilibrium phases in wire alloy structures, differential scanning calorimetry (DSC) experiments revealed delayed, non-equilibrium melting at high temperatures related to quenched-in Cu-Al phases; a final liquidus of 960-1200°C was recorded. During cooling from 1200°C, the DSC samples had the solidification behavior expected from thermodynamic equilibrium calculations. Solidification of the ternary alloys commenced with formation of ternary β and Cu-Al δ phases at 450-550°C; this was followed by β-Sn, and, finally, Cu6Sn5 and Cu-Al γ1. Because of the presence of the retained, high-temperature phases in the alloys, particle size and volume fraction of the room temperature Cu-Al IMC phases were observed to increase when the alloy casting temperature was reduced from 1200°C to 800°C, even though both temperatures are above the calculated liquidus temperature of the alloys. Preliminary electron backscatter diffraction results seemed to show Sn grain refinement in the SAC + Al BGA alloy.

Cu-segregation at the Q'/α-Al interface in Al-Mg-Si-Cu alloy

International Nuclear Information System (INIS)

Matsuda, Kenji; Teguri, Daisuke; Uetani, Yasuhiro; Sato, Tatsuo; Ikeno, Susumu

2002-01-01

Cu segregation was detected at the Q ' /α-Al interface in an Al-Mg-Si-Cu alloy by energy-filtered transmission electron microscopy. By contrast, in a Cu-free Al-Mg-Si alloy no segregation was observed at the interface between the matrix and Type-C precipitate

Spin glass transition in a thin-film NiO/permalloy bilayer

Science.gov (United States)

Ma, Tianyu; Urazhdin, Sergei

2018-02-01

We experimentally study magnetization aging in a thin-film NiO/permalloy bilayer. Aging characteristics are nearly independent of temperature below the exchange bias blocking temperature TB, but rapidly vary above it. The dependence on the magnetic history qualitatively changes across TB. The observed behaviors are consistent with the spin glass transition at TB, with significant implications for magnetism and magnetoelectronic phenomena in antiferromagnet/ferromagnet bilayers.

Improved resistive switching phenomena and mechanism using Cu-Al alloy in a new Cu:AlO{sub x}/TaO{sub x}/TiN structure

Energy Technology Data Exchange (ETDEWEB)

Roy, S. [Thin Film Nano Tech. Lab., Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Rd., Kwei-Shan, Tao-Yuan 333, Taiwan (China); Maikap, S., E-mail: sidhu@mail.cgu.edu.tw [Thin Film Nano Tech. Lab., Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Rd., Kwei-Shan, Tao-Yuan 333, Taiwan (China); Sreekanth, G.; Dutta, M.; Jana, D. [Thin Film Nano Tech. Lab., Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Rd., Kwei-Shan, Tao-Yuan 333, Taiwan (China); Chen, Y.Y.; Yang, J.R. [Department of Materials Science and Engineering, National Taiwan University, Taipei 106, Taiwan (China)

2015-07-15

Highlights: • Cu:AlO{sub x} alloy is used for the first time to have defective TaO{sub x} film. • A relation in between formation voltage and RESET current has been developed. • A switching mechanism based on a thinner with dense Cu filament is demonstrated. • Good uniformity with yield of >90% and long cycles using 1 ms pulse are obtained. - Abstract: Improved resistive switching phenomena such as device-to-device uniformity, lower formation voltage (2.8 V) and RESET current, >500 program/erase cycles, longer read endurance of >10{sup 6} cycles with a program/erase pulse width of 1 μs, and data retention of >225 h under a low current compliance of 300 μA have been discussed by using Cu-Al alloy in Cu:AlO{sub x}/TaO{sub x}/TiN conductive bridging resistive random access memory (CBRAM) device for the first time. The switching mechanism is based on a thinner with dense Cu filament formation/dissolution through the defects in the Cu:AlO{sub x}/TaO{sub x}/TiN structure owing to enhance memory characteristics. These characteristics have been confirmed by measuring randomly picked 100 devices having via-hole size of 0.4 × 0.4 μm{sup 2}. The Cu-Al alloy becomes Cu:AlO{sub x} buffer layer and Ta{sub 2}O{sub 5} becomes TaO{sub x} switching layer owing to Gibbs free energy dependency. All layers and elements are observed by high-resolution transmission electron microscope (HRTEM) image and energy dispersive X-ray spectroscopy (EDX). By developing a numerical equation in between RESET current and formation voltage, it is found that a higher rate of Cu migration is observed owing to both the defective switching layer and larger size, which results a lower formation voltage and RESET current of the Cu:AlO{sub x}/TaO{sub x}/TiN structure, as compared to Cu/Ta{sub 2}O{sub 5}/TiN under external positive bias on the Cu electrode. This simple Cu:AlO{sub x}/TaO{sub x}/TiN CBRAM device is useful for future nanoscale non-volatile memory application.

Microstructure of Co/X (X=Cu,Ag,Au) epitaxial thin films grown on Al2O3(0001) substrates

International Nuclear Information System (INIS)

Ohtake, Mitsuru; Akita, Yuta; Futamoto, Masaaki; Kirino, Fumiyoshi

2007-01-01

Epitaxial thin films of Co/X (X=Cu,Ag,Au) were prepared on Al 2 O 3 (0001) substrates at substrate temperatures of 100 and 300 degree sign C by UHV molecular beam epitaxy. A complicated microstructure was realized for the epitaxial thin films. In-situ reflection high-energy electron diffraction observation has shown that X atoms of the buffer layer segregated to the surface during Co layer deposition, and it yielded a unique epitaxial granular structure. The structure consists of small Co grains buried in the X buffer layer, where both the magnetic small Co grains and the nonmagnetic X layer are epitaxially grown on the single crystal substrate. The structure varied depending on the X element and the substrate temperature. The crystal structure of Co grains is influenced by the buffer layer material and determined to be hcp and fcc structures for the buffer layer materials of Au and Cu, respectively

Graphene Oxide Monolayer as a Compatibilizer at the Polymer-Polymer Interface for Stabilizing Polymer Bilayer Films against Dewetting.

Science.gov (United States)

Kim, Tae-Ho; Kim, Hyeri; Choi, Ki-In; Yoo, Jeseung; Seo, Young-Soo; Lee, Jeong-Soo; Koo, Jaseung

2016-12-06

We investigate the effect of adding graphene oxide (GO) sheets at the polymer-polymer interface on the dewetting dynamics and compatibility of immiscible polymer bilayer films. GO monolayers are deposited at the poly(methyl methacrylate) (PMMA)-polystyrene (PS) interface by the Langmuir-Schaefer technique. GO monolayers are found to significantly inhibit the dewetting behavior of both PMMA films (on PS substrates) and PS films (on PMMA substrates). This can be interpreted in terms of an interfacial interaction between the GO sheets and these polymers, which is evidenced by the reduced contact angle of the dewet droplets. The favorable interaction of GO with both PS and PMMA facilitates compatibilization of the immiscible polymer bilayer films, thereby stabilizing their bilayer films against dewetting. This compatibilization effect is verified by neutron reflectivity measurements, which reveal that the addition of GO monolayers broadens the interface between PS and the deuterated PMMA films by 2.2 times over that of the bilayer in the absence of GO.

Mechanochemical synthesis of Cu-Al and methyl orange intercalated Cu-Al layered double hydroxides

International Nuclear Information System (INIS)

Qu, Jun; He, Xiaoman; Chen, Min; Hu, Huimin; Zhang, Qiwu; Liu, Xinzhong

2017-01-01

In this study, a mechanochemical route to synthesize a Cu-Al layered double hydroxide (LDH) and a methyl orange (MO) intercalated one (MO-LDH) was introduced, in which basic cupric carbonate (Cu_2(OH)_2CO_3) and aluminum hydroxide (Al(OH)_3) with Cu/Al molar ratio at 2/1 was first dry ground for 2 h and then agitated in water or methyl orange solution for another 4 h to obtain the LDH and MO-LDH products without any heating operation. The prepared samples were characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), Thermogravimetry (TG), Differential scanning calorimetry (DSC) and Scanning electron microscopy (SEM). The products showed high crystallinity phase of Cu-Al and MO intercalated Cu-Al LDH with no evident impurities, proving that the craft introduced here was facile and effective. The new idea can be applied in other fields to produce organic-inorganic composites. - Highlights: • A facile mechanochemical route to synthesize Cu-Al and MO intercalated Cu-Al LDH. • The products possesses high crystalline of LDH phase with no impure phases. • The dry milling process induces the element substitution between the raw materials. • The agitation operation helps the grain growth of LDH.

Mechanochemical synthesis of Cu-Al and methyl orange intercalated Cu-Al layered double hydroxides

Energy Technology Data Exchange (ETDEWEB)

Qu, Jun, E-mail: forsjun@whut.edu.cn [School of Resources and Environmental Engineering, Wuhan University of Technology, Luoshi Road 122, Wuhan, Hubei 430070 (China); He, Xiaoman; Chen, Min; Hu, Huimin [School of Resources and Environmental Engineering, Wuhan University of Technology, Luoshi Road 122, Wuhan, Hubei 430070 (China); Zhang, Qiwu, E-mail: zhangqw@whut.edu.cn [School of Resources and Environmental Engineering, Wuhan University of Technology, Luoshi Road 122, Wuhan, Hubei 430070 (China); Liu, Xinzhong [College of Ecological Environment and Urban Construction, Fujian University of Technology, Fuzhou 350118 China (China)

2017-04-15

In this study, a mechanochemical route to synthesize a Cu-Al layered double hydroxide (LDH) and a methyl orange (MO) intercalated one (MO-LDH) was introduced, in which basic cupric carbonate (Cu{sub 2}(OH){sub 2}CO{sub 3}) and aluminum hydroxide (Al(OH){sub 3}) with Cu/Al molar ratio at 2/1 was first dry ground for 2 h and then agitated in water or methyl orange solution for another 4 h to obtain the LDH and MO-LDH products without any heating operation. The prepared samples were characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), Thermogravimetry (TG), Differential scanning calorimetry (DSC) and Scanning electron microscopy (SEM). The products showed high crystallinity phase of Cu-Al and MO intercalated Cu-Al LDH with no evident impurities, proving that the craft introduced here was facile and effective. The new idea can be applied in other fields to produce organic-inorganic composites. - Highlights: • A facile mechanochemical route to synthesize Cu-Al and MO intercalated Cu-Al LDH. • The products possesses high crystalline of LDH phase with no impure phases. • The dry milling process induces the element substitution between the raw materials. • The agitation operation helps the grain growth of LDH.

Is LaAlO3 a viable substrate for the deposition of high quality thin films of YBa2Cu3O7-δ?

International Nuclear Information System (INIS)

Koren, Gad; Polturak, Emil

2002-01-01

A systematic study of the surface morphology of epitaxial thin films of YBa 2 Cu 3 O 7-δ on (100) LaAlO 3 wafers is reported. The films were prepared by high pressure dc sputtering or laser ablation deposition, on wafers of 0.5-2.8 mm thickness and 2 or 3 inch diameter. Optical and atomic force microscopy (AFM) were used to characterize the surfaces, while transport was used to verify the high quality of the films. For films prepared under the same conditions, we found a systematic increase in size and number of extended defects in the films with wafer thickness. In some cases, a clear correlation was observed between the defect structure and the twin boundaries of the LaAlO 3 substrate. We specify the conditions for minimizing these defects. (author)

High-efficiency THz modulator based on phthalocyanine-compound organic films

International Nuclear Information System (INIS)

He, Ting; Zhang, Bo; Shen, Jingling; Zang, Mengdi; Chen, Tianji; Hu, Yufeng; Hou, Yanbing

2015-01-01

We report a high efficiency, broadband terahertz (THz) modulator following a study of phthalocyanine-compound organic films irradiated with an external excitation laser. Both transmission and reflection modulations of each organic/silicon bilayers were measured using THz time-domain and continuous-wave systems. For very low intensities, the experimental results show that AlClPc/Si can achieve a high modulation factor for transmission and reflection, indicating that AlClPc/Si has a superior modulation efficiency compared with the other films (CuPc and SnCl 2 Pc). In contrast, the strong attenuation of the transmitted and reflected THz waves revealed that a nonlinear absorption process takes place at the organic/silicon interface

Development of a slip sensor using separable bilayer with Ecoflex-NBR film

Science.gov (United States)

Kim, Sung Joon; Moon, Hyungpil; Choi, Hyouk Ryeol; Koo, Ja Choon

2017-04-01

Polymer film-type slip sensor is presented by using novel working principle rather than measuring micro-vibration. The sensor is comprised of bilayer with Ecoflex and NBR(acrylonitrile butadiene rubber) films divided by di-electric. When slip occur on surface, bilayer have relative displacement from each other because friction-induced vibration make a clearance between two layers. This displacement can be obtained by capacitance difference. CNT(carbon nanotube) was employed for electrode because of flexible and stretchable characteristics. Also normal and shear force can be decoupled by the working principle. To verify developed sensor, slip test apparatus was designed and experiments were conducted.

Cu and Cu2O films with semi-spherical particles grown by electrochemical deposition

International Nuclear Information System (INIS)

Zheng, Jin You; Jadhav, Abhijit P.; Song, Guang; Kim, Chang Woo; Kang, Young Soo

2012-01-01

Cu and Cu 2 O films can be prepared on indium-doped tin oxide glass substrates by simple electrodeposition in a solution containing 0.1 M Cu(NO 3 ) 2 and 3 M lactic acid at different pH values. At low pH (pH = 1.2), the uniform Cu films were obtained; when pH ≥ 7, the pure Cu 2 O films can be deposited. Especially, at pH = 11, the deposited Cu 2 O films exhibited cubic surface morphology exposing mainly {100} plane; in contrast, the films consisting of semi-spherical particles were obtained when the solution was being stirred for 2 weeks prior to use. The possible growth process and mechanism were comparatively discussed. - Highlights: ► Cu and Cu 2 O films were prepared by facile electrodeposition. ► Electrodeposition was preformed in electrolyte at different pH values. ► Dendritic Cu films were obtained at 1.2 pH with relatively high deposition potential. ► Semi-spherical Cu 2 O films were obtained with solution at 11 pH and stirred for 2 weeks. ► The possible growth mechanism of semi-spherical Cu 2 O films was discussed.

Nb/NiCu bilayers in single and stacked superconductive tunnel junctions: preliminary results

International Nuclear Information System (INIS)

Pepe, G.P.; Ruotolo, A.; Parlato, L.; Peluso, G.; Ausanio, G.; Carapella, G.; Latempa, R.

2004-01-01

We present preliminary experimental results concerning both single and stacked tunnel junctions in which one of the electrodes was formed by a superconductor/ferromagnet (S/F) bi-layer. In particular, in the stacked configuration a Nb/NiCu bi-layer was used as the intermediate electrode, and it was probed by tunneling on both sides. Tunnel junctions have been characterized in terms of current-voltage characteristics (IVC), and differential conductance. Preliminary steady-state injection-detection measurements performed in the stacked devices at T=4.2 K are also presented and discussed

The Cu2ZnSnSe4 thin films solar cells synthesized by electrodeposition route

Science.gov (United States)

Li, Ji; Ma, Tuteng; Wei, Ming; Liu, Weifeng; Jiang, Guoshun; Zhu, Changfei

2012-06-01

An electrodeposition route for preparing Cu2ZnSnSe4 thin films for thin film solar cell absorber layers is demonstrated. The Cu2ZnSnSe4 thin films are prepared by co-electrodeposition Cu-Zn-Sn metallic precursor and subsequently annealing in element selenium atmosphere. The structure, composition and optical properties of the films were investigated by X-ray diffraction (XRD), Raman spectrometry, energy dispersive spectrometry (EDS) and UV-VIS absorption spectroscopy. The Cu2ZnSnSe4 thin film with high crystalline quality was obtained, the band gap and absorption coefficient were 1.0 eV and 10-4 cm-1, which is quite suitable for solar cells fabrication. A solar cell with the structure of ZnO:Al/i-ZnO/CdS/Cu2ZnSnSe4/Mo/glass was fabricated and achieved an conversion efficiency of 1.7%.

Characteristics of TiO_2/ZnO bilayer film towards pH sensitivity prepared by different spin coating deposition process

International Nuclear Information System (INIS)

Rahman, Rohanieza Abdul; Zulkefle, Muhammad Al Hadi; Abdullah, Wan Fazlida Hanim; Rusop, M.; Herman, Sukreen Hana

2016-01-01

In this study, titanium dioxide (TiO_2) and zinc oxide (ZnO) bilayer film for pH sensing application will be presented. TiO_2/ZnO bilayer film with different speed of spin-coating process was deposited on Indium Tin Oxide (ITO), prepared by sol-gel method. This fabricated bilayer film was used as sensing membrane for Extended Gate Field-Effect Transistor (EGFET) for pH sensing application. Experimental results indicated that the sensor is able to detect the sensitivity towards pH buffer solution. In order to obtained the result, sensitivity measurement was done by using the EGFET setup equipment with constant-current (100 µA) and constant-voltage (0.3 V) biasing interfacing circuit. TiO_2/ZnO bilayer film which the working electrode, act as the pH-sensitive membrane was connected to a commercial metal-oxide semiconductor FET (MOSFET). This MOSFET then was connected to the interfacing circuit. The sensitivity of the TiO2 thin film towards pH buffer solution was measured by dipping the sensing membrane in pH4, pH7 and pH10 buffer solution. These thin films were characterized by using Field Emission Scanning Electron Microscope (FESEM) to obtain the surface morphology of the composite bilayer films. In addition, I-V measurement was done in order to determine the electrical properties of the bilayer films. According to the result obtained in this experiment, bilayer film that spin at 4000 rpm, gave highest sensitivity which is 52.1 mV/pH. Relating the I-V characteristic of the thin films and sensitivity, the sensing membrane with higher conductivity gave better sensitivity.

Water-enhanced adhesion at interface in immiscible bilayer film of polystyrene and poly(methyl methacrylate)

International Nuclear Information System (INIS)

Harada, M; Koga, T; Fukumori, K; Sugiyama, J; Geue, T

2014-01-01

From nano-scratch tests, strong interfacial adhesion has been found for polystyrene (PS) and poly(methyl methacrylate) (PMMA) bilayer films prepared by a water floating (WF) method, while a PS layer on a PMMA film produced by a spin coating (SC) method peels off easily at the interface. Neutron reflectivity measurements demonstrated a clear difference in the interfacial width (σ) between the two bilayers; σ = 9 nm for the film obtained by the WF method, whereas σ = 5 nm for that by the SC method. Plasticization of the films by water would be responsible for broadening of the interface to enhance adhesion strength.

Effect of substrate on texture and mechanical properties of Mg-Cu-Zn thin films

Science.gov (United States)

Eshaghi, F.; Zolanvari, A.

2018-04-01

In this work, thin films of Mg-Cu-Zn with 60 nm thicknesses have been deposited on the Si(100), Al, stainless steel, and Cu substrates using DC magnetron sputtering. FESEM images displayed uniformity of Mg-Cu-Zn particles on the different substrates. AFM micrograph revealed the roughness of thin film changes due to the different kinds of the substrates. XRD measurements showed the existence of strong Mg (002) reflections and weak Mg (101) peaks. Residual stress and adhesion force have been measured as the mechanical properties of the Mg-Cu-Zn thin films. The residual stresses of thin films which have been investigated by X-ray diffraction method revealed that the thin films sputtered on the Si and Cu substrates endure minimum and maximum stresses, respectively, during the deposition process. However, the force spectroscopy analysis indicated that the films grew on the Si and Cu experienced maximum and minimum adhesion force. The texture analysis has been done using XRD instrument to make pole figures of Mg (002) and Mg (101) reflections. ODFs have been calculated to evaluate the distribution of the orientations within the thin films. It was found that the texture and stress have an inverse relation, while the texture and the adhesion force of the Mg-Cu-Zn thin films have direct relation. A thin film that sustains the lowest residual stresses and highest adhesive force had the strongest {001} basal fiber texture.

Electrochemomechanical Behaviour of Bilayer and Trilayer Films with PEDOT and PPY Conducting Polymers

DEFF Research Database (Denmark)

Zainudeen, Umer L.; Careem, M.A.; Skaarup, Steen

2008-01-01

a constant load of 1.5 g. The cyclic voltammograms as well as the UV-visible spectra of PEDOT and PPy are very different, pointing towards the possibility of being able to separate the two layers experimentally – even when combined in a single film. Bilayer results show combined characteristics of each...... layer is very thin compared to that of the PPy layer, and characterized using cyclic voltammetry, optical absorption spectroscopy and electrochemical quartz crystal microbalance (EQCM) techniques. Actuators of bilayer and trilayer free standing films were characterized electromechanically under...

Pitting corrosion of Al and Al-Cu alloys by ClO4- ions in neutral sulphate solutions

International Nuclear Information System (INIS)

Amin, Mohammed A.; Abd El Rehim, Sayed S.; Moussa, S.O.; Ellithy, Abdallah S.

2008-01-01

The influence of various concentrations of NaClO 4 , as a pitting corrosion agent, on the corrosion behaviour of pure Al, and two Al-Cu alloys, namely (Al + 2.5 wt% Cu) and (Al + 7 wt% Cu) alloys in 1.0 M Na 2 SO 4 solution was investigated by potentiodynamic polarization and potentiostatic techniques at 25 deg. C. Measurements were conducted under the influence of various experimental conditions, complemented by ex situ energy dispersive X-ray (EDX) and scanning electron microscopy (SEM) examinations of the electrode surface. In free perchlorate sulphate solutions, for the three Al samples, the anodic polarization exhibits an active/passive transition. The active dissolution region involves an anodic peak (peak A) which is assigned to the formation of Al 2 O 3 passive film on the electrode surface. The passive region extends up to 1500 mV with almost constant current density (j pass ) without exhibiting a critical breakdown potential or showing any evidence of pitting attack. For the three Al samples, addition of ClO 4 - ions to the sulphate solution stimulates their active anodic dissolution and tends to induce pitting corrosion within the oxide passive region. Pitting corrosion was confirmed by SEM examination of the electrode surface. The pitting potential decreases with increasing ClO 4 - ion concentration indicating a decrease in pitting corrosion resistance. The susceptibility of the three Al samples towards pitting corrosion decreases in the order: Al > (Al + 2.5 wt% Cu) alloy > (Al + 7 wt% Cu) alloy. Potentiostatic measurements showed that the rate of pitting initiation increases with increasing ClO 4 - ion concentration and applied step anodic potential, while it decreases with increasing %Cu in the Al samples. The inhibitive effect of SO 4 2- ions was also discussed

YBa2Cu3O7 films prepared by aerosol MOCVD

International Nuclear Information System (INIS)

Weiss, F.; Froehlich, K.; Haase, R.; Labeau, M.; Selbmann, D.; Senateur, J.P.; Thomas, O.

1993-01-01

In the present study we report on properties of YBa 2 Cu 3 O 7 films prepared by aerosol MOCVD. We give a short description of the process and we focus on the superconducting and related properties of the films deposited on SrTiO 3 , LaAlO 3 and NdGaO 3 single crystalline substrates. (orig.)

The crystallisation of Cu2ZnSnS4 thin film solar cell absorbers from co-electroplated Cu-Zn-Sn precursors

International Nuclear Information System (INIS)

Schurr, R.; Hoelzing, A.; Jost, S.; Hock, R.; Voss, T.; Schulze, J.; Kirbs, A.; Ennaoui, A.; Lux-Steiner, M.; Weber, A.; Koetschau, I.; Schock, H.-W.

2009-01-01

The best CZTS solar cell so far was produced by co-sputtering continued with vapour phase sulfurization method. Efficiencies of up to 5.74% were reached by Katagiri et al. The one step electrochemical deposition of copper, zinc, tin and subsequent sulfurization is an alternative fabrication technique for the production of Cu 2 ZnSnS 4 based thin film solar cells. A kesterite based solar cell (size 0.5 cm 2 ) with a conversion efficiency of 3.4% (AM1.5) was produced by vapour phase sulfurization of co-electroplated Cu-Zn-Sn films. We report on results of in-situ X-ray diffraction (XRD) experiments during crystallisation of kesterite thin films from electrochemically co-deposited metal films. The kesterite crystallisation is completed by the solid state reaction of Cu 2 SnS 3 and ZnS. The measurements show two different reaction paths depending on the metal ratios in the as deposited films. In copper-rich metal films Cu 3 Sn and CuZn were found after electrodeposition. In copper-poor or near stoichiometric precursors additional Cu 6 Sn 5 and Sn phases were detected. The formation mechanism of Cu 2 SnS 3 involves the binary sulphides Cu 2-x S and SnS 2 in the absence of the binary precursor phase Cu 6 Sn 5 . The presence of Cu 6 Sn 5 leads to a preferred formation of Cu 2 SnS 3 via the reaction educts Cu 2-x S and SnS 2 in the presence of a SnS 2 (Cu 4 SnS 6 ) melt. The melt phase may be advantageous in crystallising the kesterite, leading to enhanced grain growth in the presence of a liquid phase

Heterojunction solar cell with 6% efficiency based on an n-type aluminum-gallium-oxide thin film and p-type sodium-doped Cu2O sheet

Science.gov (United States)

Minami, Tadatsugu; Nishi, Yuki; Miyata, Toshihiro

2015-02-01

In this paper, we describe efforts to enhance the efficiency of Cu2O-based heterojunction solar cells fabricated with an aluminum-gallium-oxide (Al-Ga-O) thin film as the n-type layer and a p-type sodium (Na)-doped Cu2O (Cu2O:Na) sheet prepared by thermally oxidizing copper sheets. The optimal Al content [X; Al/(Ga + Al) atomic ratio] of an AlX-Ga1-X-O thin-film n-type layer was found to be approximately 2.5 at. %. The optimized resistivity was approximately 15 Ω cm for n-type AlX-Ga1-X-O/p-type Cu2O:Na heterojunction solar cells. A MgF2/AZO/Al0.025-Ga0.975-O/Cu2O:Na heterojunction solar cell with 6.1% efficiency was fabricated using a 60-nm-thick n-type oxide thin-film layer and a 0.2-mm-thick Cu2O:Na sheet with the optimized resistivity.

The Y-Cu-Al system

International Nuclear Information System (INIS)

Krachan, T.; Stel'makhovych, B.; Kuz'ma, Yu.

2003-01-01

The phase diagram of the Y-Cu-Al system at 820 K has been constructed using X-ray powder diffraction. The existence of earlier known ternary aluminides has been confirmed and their homogeneity regions and atomic distributions in the structures have been determined: YCu 4.6-4.0 Al 7.4-8.0 (ThMn 12 -type R I =0.049), Y 2 Cu 12.0-10.5 Al 5.0-6.5 (Th 2 Zn 17 -type R I =0.092), YCu 1.0-1.1 Al 1.0-0.9 (Fe 2 P-type R I =0.068). It has been shown that the structure of Y(Cu,Al) 3 is characterized by an ordered distribution of the Cu and Al atoms and it should be referred as Ca 3 Cu 2 Al 7 structure type (R I =0.060) besides the PuNi 3 structure type with statistical occupancies of the smaller atoms. At the investigated temperature the compound YCu 1.0-0.25 Al 3.0-3.75 (BaAl 4 -type) was not observed. However, we found the ternary aluminide with composition Y 3 Cu 2.7-2.0 Al 8.3-9.0 and related La 3 Al 11 -type (space group Immm, a=0.4192-0.4228, b=1.2423-1.2557, c=0.9812-0.9895 nm, R I =0.069). The compounds YCu 6.8 Al 4.2 (space group Fddd, Tb(Cu 0.58 Al 0.42 ) 11 -type, a=1.42755, b=1.48587, c=0.65654 nm, R I =0.062) and YCu 6.5 Al 4.5 (space group I4 1 /amd, BaCd 11 -type, a=1.02774, c=0.65838 nm, R I =0.071) have been found and structurally refined for the first time

Synthesis of Cu2O from CuO thin films: Optical and electrical properties

Directory of Open Access Journals (Sweden)

Dhanya S. Murali

2015-04-01

Full Text Available Hole conducting, optically transparent Cu2O thin films on glass substrates have been synthesized by vacuum annealing (5×10−6 mbar at 700 K for 1 hour of magnetron sputtered (at 300 K CuO thin films. The Cu2O thin films are p-type and show enhanced properties: grain size (54.7 nm, optical transmission 72% (at 600 nm and Hall mobility 51 cm2/Vs. The bulk and surface Valence band spectra of Cu2O and CuO thin films are studied by temperature dependent Hall effect and Ultra violet photo electron Spectroscopy (UPS. CuO thin films show a significant band bending downwards (due to higher hole concentration than Cu2O thin films.

Chemical and electrical characterisation of the segregation of Al from a CuAl alloy (90%:10% wt) with thermal anneal

Energy Technology Data Exchange (ETDEWEB)

Byrne, C., E-mail: conor.byrne2@mail.dcu.ie [School of Physical Sciences, Dublin City University, Dublin 9 (Ireland); Brady, A.; Walsh, L.; McCoy, A.P.; Bogan, J. [School of Physical Sciences, Dublin City University, Dublin 9 (Ireland); McGlynn, E. [School of Physical Sciences, National Centre for Plasma Science and Technology, Dublin City University, Dublin 9 (Ireland); Rajani, K.V. [School of Electronic Engineering, Dublin City University, Dublin 9 (Ireland); Hughes, G. [School of Physical Sciences, Dublin City University, Dublin 9 (Ireland); School of Physical Sciences, National Centre for Plasma Science and Technology, Dublin City University, Dublin 9 (Ireland)

2016-01-29

A copper–aluminium (CuAl) alloy (90%:10% wt) has been investigated in relation to segregation of the alloying element Al, from the alloy bulk during vacuum anneal treatments. X-ray photoelectron spectroscopy (XPS) measurements were used to track the surface enrichment of Al segregating from the alloy bulk during in situ ultra-high vacuum anneals. Secondary ion mass spectroscopy (SIMS) indicates a build-up of Al at the surface of the annealed alloy relative to the bulk composition. Metal oxide semiconductor (MOS) CuAl/SiO{sub 2}/Si structures show a shift in flatband voltage upon thermal anneal consistent with the segregation of the Al to the alloy/SiO{sub 2} interface. Electrical four point probe measurements indicate that the segregation of Al from the alloy bulk following thermal annealing results in a decrease in film resistivity. X-ray diffraction data shows evidence for significant changes in crystal structure upon annealing, providing further evidence for expulsion of Al from the alloy bulk. - Highlights: • CuAl alloy (90%:Al 10% wt) deposited and vacuum annealed • XPS and SIMS data show segregation of Al from the alloy bulk. • Chemical changes seen indicate the reduction of Cu oxide and growth of Al Oxide. • Electrical measurements indicate a chemical change at the metal/SiO{sub 2} interface. • All data consistent with Cu diffusion barrier layer formed.

Preparation and structure characterization of SmCo5(0001) epitaxial thin films grown on Cu(111) underlayers

International Nuclear Information System (INIS)

Ohtake, Mitsuru; Nukaga, Yuri; Futamoto, Masaaki; Kirino, Fumiyoshi

2009-01-01

SmCo 5 (0001) epitaxial films were prepared on Cu(111) single-crystal underlayers formed on Al 2 O 3 (0001) substrates at 500 deg. C. The nucleation and growth mechanism of (0001)-oriented SmCo 5 crystal on Cu(111) underlayer is investigated and a method to control the nucleation is proposed. The SmCo 5 epitaxial thin film formed directly on Cu underlayer consists of two types of domains whose orientations are rotated around the film normal by 30 deg. each other. By introducing a thin Co seed layer on the Cu underlayer, a SmCo 5 (0001) single-crystal thin film is successfully obtained. Nucleation of SmCo 5 crystal on Cu underlayer seems controllable by varying the interaction between the Cu underlayer and the SmCo 5 layer

Formation of closely packed Cu nanoparticle films by capillary immersion force for preparing low-resistivity Cu films at low temperature

Energy Technology Data Exchange (ETDEWEB)

Yokoyama, Shun, E-mail: shun.yokoyama.c2@tohoku.ac.jp; Motomiya, Kenichi; Takahashi, Hideyuki; Tohji, Kazuyuki [Tohoku University, Graduate School of Environmental Studies (Japan)

2016-11-15

Films made of closely packed Cu nanoparticles (NPs) were obtained by drop casting Cu NP inks. The capillary immersion force exerted during the drying of the inks caused the Cu NPs to attract each other, resulting in closely packed Cu NP films. The apparent density of the films was found to depend on the type of solvent in the ink because the capillary immersion force is affected by the solvent surface tension and dispersibility of Cu NPs in the solvent. The closely packed particulate structure facilitated the sintering of Cu NPs even at low temperature, leading to low-resistivity Cu films. The sintering was also enhanced with a decrease in the size of NPs used. We demonstrated that a closely packed particulate structure using Cu NPs with a mean diameter 61.7 nm showed lower resistivity (7.6 μΩ cm) than a traditionally made Cu NP film (162 μΩ cm) after heat treatment.

Tribological properties of self-lubricating Ta-Cu films

Science.gov (United States)

Qin, Wen; Fu, Licai; Zhu, Jiajun; Yang, Wulin; Li, Deyi; Zhou, Lingping

2018-03-01

In this paper, Ta and TaCu films were deposited by using magnetron sputtering, and the tribological properties of the films against Si3N4 balls were investigated under the loads of 2 N and 5 N. The average grain sizes of both films are below 25 nm. Ta and TaCu films have approximate hardness. While the wear rate of TaCu film is much smaller than that of Ta film. Post-wear testing XRD, Raman and XPS revealed the formation of tantalum oxide on the worn surface of both Ta and TaCu films. Tantalum oxidation is effectively lubricating to reduce friction coefficient. So the friction coefficient of both Ta and TaCu film is about 0.45 under different applied loads. Meanwhile, the addition of Cu could increase the toughness of the film, and avoid the generation of wear debris, resulting in a significant increase in wear resistance.

Cu(InGa)Se{sub 2} absorber formation by in-situ, low-temperature annealing of co-evaporated bilayer (InGa){sub 2}Se{sub 3}/CuSe precursors

Energy Technology Data Exchange (ETDEWEB)

Moon, Kyeongchan; Kim, Woo Kyoung, E-mail: wkim@ynu.ac.kr

2015-12-01

Chalcopyrite Cu(InGa)Se{sub 2} (CIGS) absorbers were fabricated by the formation of bilayer stacked glass/Mo/(InGa){sub 2}Se{sub 3}/CuSe precursors followed by in-situ thermal annealing at 450 °C for approximately 10 min in a vacuum evaporator. The material properties (e.g., crystal orientation, compositional depth profile, and overall composition) and device performance of the resulting CIGS absorbers were compared with those of the CIGS absorbers formed by conventional 1-stage and 3-stage CIGS formation processes at a similar temperature. X-ray diffraction confirmed that the 1-stage co-evaporation and in-situ annealing of the bilayer precursor produced a polycrystalline CIGS absorber without a specific texture, whereas the CIGS absorber formed by the 3-stage process showed a highly (220) preferred orientation. Secondary ion mass spectrometry revealed Ga accumulation at the bottom of CIGS formed by in-situ annealing of the bilayer precursors. The cell efficiency of the device with the CIGS absorber formed by the in-situ, low-temperature (450 °C) annealing of bilayer stacked glass/Mo/(InGa){sub 2}Se{sub 3}/CuSe precursors was comparable to that produced by the conventional 3-stage process at a similar temperature. - Highlights: • Annealing of (InGa){sub 2}Se{sub 3}/CuSe precursors was compared with coevaporation process. • In-situ annealing of (InGa){sub 2}Se{sub 3}/CuSe precursors at 450 °C produced about 9% solar cell. • Ga profile within Cu(InGa)Se{sub 2} depended on process profile during co-evaporation.

Characteristics of TiO{sub 2}/ZnO bilayer film towards pH sensitivity prepared by different spin coating deposition process

Energy Technology Data Exchange (ETDEWEB)

Rahman, Rohanieza Abdul, E-mail: rohanieza.abdrahman@gmail.com; Zulkefle, Muhammad Al Hadi, E-mail: alhadizulkefle@gmail.com [NANO-Electronic Centre, Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); Abdullah, Wan Fazlida Hanim, E-mail: wanfaz@salam.uitm.edu.my [Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM) Shah Alam, 40450 Shah Alam, Selangor (Malaysia); Rusop, M., E-mail: rusop@salam.uitm.com [NANO-Electronic Centre, Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); NANO-Science Technology Centre (NST), Institute of Science (IOS), Faculty of Applied Science, Universiti Teknologi MARA - UiTM, 40450 Shah Alam, Selangor (Malaysia); Herman, Sukreen Hana, E-mail: hana1617@salam.uitm.edu.my [NANO-Electronic Centre, Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); CoRe of Frontier Materials & Industry Applications, Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia)

2016-07-06

In this study, titanium dioxide (TiO{sub 2}) and zinc oxide (ZnO) bilayer film for pH sensing application will be presented. TiO{sub 2}/ZnO bilayer film with different speed of spin-coating process was deposited on Indium Tin Oxide (ITO), prepared by sol-gel method. This fabricated bilayer film was used as sensing membrane for Extended Gate Field-Effect Transistor (EGFET) for pH sensing application. Experimental results indicated that the sensor is able to detect the sensitivity towards pH buffer solution. In order to obtained the result, sensitivity measurement was done by using the EGFET setup equipment with constant-current (100 µA) and constant-voltage (0.3 V) biasing interfacing circuit. TiO{sub 2}/ZnO bilayer film which the working electrode, act as the pH-sensitive membrane was connected to a commercial metal-oxide semiconductor FET (MOSFET). This MOSFET then was connected to the interfacing circuit. The sensitivity of the TiO2 thin film towards pH buffer solution was measured by dipping the sensing membrane in pH4, pH7 and pH10 buffer solution. These thin films were characterized by using Field Emission Scanning Electron Microscope (FESEM) to obtain the surface morphology of the composite bilayer films. In addition, I-V measurement was done in order to determine the electrical properties of the bilayer films. According to the result obtained in this experiment, bilayer film that spin at 4000 rpm, gave highest sensitivity which is 52.1 mV/pH. Relating the I-V characteristic of the thin films and sensitivity, the sensing membrane with higher conductivity gave better sensitivity.

Preparation of Cu{sub 2}ZnSnS{sub 4} thin films by sulfurization of co-electroplated Cu-Zn-Sn precursors

Energy Technology Data Exchange (ETDEWEB)

Araki, Hideaki; Kubo, Yuki; Jimbo, Kazuo; Maw, Win Shwe; Katagiri, Hironori; Yamazaki, Makoto; Oishi, Koichiro; Takeuchi, Akiko [Nagaoka National College of Technology, 888 Nishikatakai, Nagaoka, Niigata 940-8532 (Japan)

2009-05-15

Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films were prepared by sulfurization of electrodeposited Cu-Zn-Sn precursors. The Cu-Zn-Sn precursors were deposited on Mo-coated glass substrates in a one-step process from an electrolyte containing copper (II) sulfate pentahydrate, zinc sulfate heptahydrate, tin (II) chloride dehydrate and tri-sodium citrate dehydrate. The precursors were sulfurized by annealing with sulfur at temperatures of 580 C and 600 C in an N{sub 2} atmosphere. X-ray diffraction peaks attributable to CZTS were detected in the sulfurized films. Photovoltaic cells with the structure glass/Mo/CZTS/ CdS/ZnO:Al/Al were fabricated using the CZTS films by sulfurizing the electrodeposited precursors. The best photovoltaic cell performance was obtained with Zn-rich samples. An open-circuit voltage of 540 mV, a short-circuit current of 12.6 mA/cm{sup 2} and an efficiency of 3.16% were achieved. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Study of the influence of semiconductor material parameters on acoustic wave propagation modes in GaSb/AlSb bi-layered structures by Legendre polynomial method

Energy Technology Data Exchange (ETDEWEB)

Othmani, Cherif, E-mail: othmanicheriffss@gmail.com; Takali, Farid; Njeh, Anouar; Ben Ghozlen, Mohamed Hédi

2016-09-01

The propagation of Rayleigh–Lamb waves in bi-layered structures is studied. For this purpose, an extension of the Legendre polynomial (LP) method is proposed to formulate the acoustic wave equation in the bi-layered structures induced by thin film Gallium Antimonide (GaSb) and with Aluminum Antimonide (AlSb) substrate in moderate thickness. Acoustic modes propagating along a bi-layer plate are shown to be quite different than classical Lamb modes, contrary to most of the multilayered structures. The validation of the LP method is illustrated by a comparison between the associated numerical results and those obtained using the ordinary differential equation (ODE) method. The convergency of the LP method is discussed through a numerical example. Moreover, the influences of thin film GaSb parameters on the characteristics Rayleigh–Lamb waves propagation has been studied in detail. Finally, the advantages of the Legendre polynomial (LP) method to analyze the multilayered structures are described. All the developments performed in this work were implemented in Matlab software.

Study of the influence of semiconductor material parameters on acoustic wave propagation modes in GaSb/AlSb bi-layered structures by Legendre polynomial method

International Nuclear Information System (INIS)

Othmani, Cherif; Takali, Farid; Njeh, Anouar; Ben Ghozlen, Mohamed Hédi

2016-01-01

The propagation of Rayleigh–Lamb waves in bi-layered structures is studied. For this purpose, an extension of the Legendre polynomial (LP) method is proposed to formulate the acoustic wave equation in the bi-layered structures induced by thin film Gallium Antimonide (GaSb) and with Aluminum Antimonide (AlSb) substrate in moderate thickness. Acoustic modes propagating along a bi-layer plate are shown to be quite different than classical Lamb modes, contrary to most of the multilayered structures. The validation of the LP method is illustrated by a comparison between the associated numerical results and those obtained using the ordinary differential equation (ODE) method. The convergency of the LP method is discussed through a numerical example. Moreover, the influences of thin film GaSb parameters on the characteristics Rayleigh–Lamb waves propagation has been studied in detail. Finally, the advantages of the Legendre polynomial (LP) method to analyze the multilayered structures are described. All the developments performed in this work were implemented in Matlab software.

Interfacial effects revealed by ultrafast relaxation dynamics in BiFeO 3 / YBa 2 Cu 3 O 7 bilayers

KAUST Repository

Springer, D.

2016-02-12

The temperature dependence of the relaxation dynamics in the bilayer thin film heterostructure composed of multiferroic BiFeO3 (BFO) and superconducting YBa2Cu3O7 (YBCO) grown on a (001) SrTiO3 substrate is studied by a time-resolved pump-probe technique, and compared with that of pure YBCO thin film grown under the same growth conditions. The superconductivity of YBCO is found to be retained in the heterostructure. We observe a speeding up of the YBCO recombination dynamics in the superconducting state of the heterostructure, and attribute it to the presence of weak ferromagnetism at the BFO/YBCO interface as observed in magnetization data. An extension of the Rothwarf-Taylor model is used to fit the ultrafast dynamics of BFO/YBCO, that models an increased quasiparticle occupation of the ferromagnetic interfacial layer in the superconducting state of YBCO.

Interfacial effects revealed by ultrafast relaxation dynamics in BiFeO 3 / YBa 2 Cu 3 O 7 bilayers

KAUST Repository

Springer, D.; Nair, Saritha K.; He, Mi; Lu, C. L.; Cheong, S. A.; Wu, Tao; Panagopoulos, C.; Chia, Elbert E. M.; Zhu, Jian-Xin

2016-01-01

The temperature dependence of the relaxation dynamics in the bilayer thin film heterostructure composed of multiferroic BiFeO3 (BFO) and superconducting YBa2Cu3O7 (YBCO) grown on a (001) SrTiO3 substrate is studied by a time-resolved pump-probe technique, and compared with that of pure YBCO thin film grown under the same growth conditions. The superconductivity of YBCO is found to be retained in the heterostructure. We observe a speeding up of the YBCO recombination dynamics in the superconducting state of the heterostructure, and attribute it to the presence of weak ferromagnetism at the BFO/YBCO interface as observed in magnetization data. An extension of the Rothwarf-Taylor model is used to fit the ultrafast dynamics of BFO/YBCO, that models an increased quasiparticle occupation of the ferromagnetic interfacial layer in the superconducting state of YBCO.

Nano-structured Cu(In,Al)Se{sub 2} near-infrared photodetectors

Energy Technology Data Exchange (ETDEWEB)

Chang, Ruo-Ping [Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung University, 1 University Road, Tainan 701, Taiwan (China); Perng, Dung-Ching, E-mail: dcperng@ee.ncku.edu.tw [Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung University, 1 University Road, Tainan 701, Taiwan (China); Center for Micro/Nano Science and Technology, National Cheng Kung University, 1 University Road, Tainan 701, Taiwan (China)

2013-02-01

We have demonstrated nano-structured Cu(In,Al)Se{sub 2} (CIAS) near-infrared (NIR) photodetectors (PDs). The CIAS NIR PDs were fabricated on ZnO nanowires (NWs)/ZnO/Mo/ITO (indium tin oxide) glass substrate. CIAS film acted as a sensing layer and sparse ZnSe NWs, which were converted from ZnO NWs after selenization process, were embedded in the CIAS film to improve the amplification performance of the NIR PDs. X-ray diffraction patterns show that the CIAS film is a single phased polycrystalline film. Scanning electron microscopy was used to examine the morphology of the CIAS film and the growth of NWs. Two detection schemes, plain Al–CIAS–Al metal–semiconductor–metal structure and vertical structure with CIAS/ZnSe NWs annular p–n junctions, were studied. The nano-structured NIR PDs demonstrate two orders of magnitude for the annular p–n junction and one order of magnitude for the MSM structure in photocurrent amplification. The responsivities of the PDs using both sensing structures have the same cut-off frequency near 790 nm. - Highlights: ► We demonstrate nano-structured Cu(In,Al)Se{sub 2} near-infrared photodetectors. ► Photodetectors were fabricated on ZnO nanowires/ZnO/Mo/ITO glass substrate. ► Two detection schemes studied: a plain MSM structure and a vertical structure. ► Photocurrent amplification for the vertical structure is two orders of magnitude. ► Photocurrent amplification for the MSM structure is one order of magnitude.

Effects of substrate temperature and Cu underlayer thickness on the formation of SmCo5(0001) epitaxial thin films

International Nuclear Information System (INIS)

Ohtake, Mitsuru; Nukaga, Yuri; Futamoto, Masaaki; Kirino, Fumiyoshi

2010-01-01

SmCo 5 (0001) epitaxial thin films were prepared on Cu(111) underlayers heteroepitaxially grown on Al 2 O 3 (0001) single-crystal substrates by molecular beam epitaxy. The effects of substrate temperature and Cu underlayer thickness on the crystallographic properties of SmCo 5 (0001) epitaxial films were investigated. The Cu atoms of underlayer diffuse into the SmCo 5 film and substitute the Co sites in SmCo 5 structure forming an alloy compound of Sm(Co,Cu) 5 . The ordered phase formation is enhanced with increasing the substrate temperature and with increasing the Cu underlayer thickness. The Cu atom diffusion into the SmCo 5 film is assisting the formation of Sm(Co,Cu) 5 ordered phase.

Growth and characterisation of potentiostatically electrodeposited Cu2O and Cu thin films

International Nuclear Information System (INIS)

Wijesundera, R.P.; Hidaka, M.; Koga, K.; Sakai, M.; Siripala, W.

2006-01-01

Cuprous oxide and copper thin films were potentiostatically electrodeposited in an acetate bath. Voltammetric curves were used to investigate the growth parameters; deposition potential, pH and temperature of the bath. Deposition potential dependency on the structural, morphological, optical and electronic properties of the films were investigated by the X-ray diffraction measurements, scanning electron micrographs, absorption measurements and dark and light current-voltage characterisations. It was observed that single phase polycrystalline Cu 2 O can be deposited from 0 to - 300 mV Vs saturated calomel electrode (SCE) and co-deposition of Cu and Cu 2 O starts at - 400 mV Vs SCE. Further increase in deposition potential from - 700 mV Vs SCE produces single phase Cu thin films. Single phase polycrystalline Cu 2 O thin films with cubic grains of 1-2 μm can be possible within the very narrow potential domain around - 200 mV Vs SCE. Enhanced photoresponse in a photoelectrochemical cell is produced by the Cu 2 O thin film prepared at - 400 mV Vs SCE, where Cu is co-deposited with Cu 2 O with random distribution of Cu spheres on the Cu 2 O surface. This study reveals that a single deposition bath can be used to deposit both Cu and Cu 2 O separately and an admixture of Cu-Cu 2 O by controlling the deposition parameters

Stability of Cu-Precipitates in Al-Cu Alloys

Directory of Open Access Journals (Sweden)

Torsten E. M. Staab

2018-06-01

Full Text Available We present first principle calculations on formation and binding energies for Cu and Zn as solute atoms forming small clusters up to nine atoms in Al-Cu and Al-Zn alloys. We employ a density-functional approach implemented using projector-augmented waves and plane wave expansions. We find that some structures, in which Cu atoms are closely packed on {100}-planes, turn out to be extraordinary stable. We compare the results with existing numerical or experimental data when possible. We find that Cu atoms precipitating in the form of two-dimensional platelets on {100}-planes in the fcc aluminum are more stable than three-dimensional structures consisting of the same number of Cu-atoms. The preference turns out to be opposite for Zn in Al. Both observations are in agreement with experimental observations.

Materials science and integration bases for fabrication of (BaxSr1-x)TiO3 thin film capacitors with layered Cu-based electrodes

Science.gov (United States)

Fan, W.; Kabius, B.; Hiller, J. M.; Saha, S.; Carlisle, J. A.; Auciello, O.; Chang, R. P. H.; Ramesh, R.

2003-11-01

The synthesis and fundamental material properties of layered TiAl/Cu/Ta electrodes were investigated to achieve the integration of Cu electrodes with high-dielectric constant (κ) oxide thin films for application to the fabrication of high-frequency devices. The Ta layer is an excellent diffusion barrier to inhibit deleterious Cu diffusion into the Si substrate, while the TiAl layer provides an excellent barrier against oxygen diffusion into the Cu layer to inhibit Cu oxidation during the growth of the high-κ layer in an oxygen atmosphere. Polycrystalline (BaxSr1-x)TiO3 (BST) thin films were grown on the Cu-based bottom electrode by rf magnetron sputtering at temperatures in the range 400-600 °C in oxygen, to investigate the performance of BST/Cu-based capacitors. Characterization of the Cu-based layered structure using surface analytical methods showed that two amorphous oxide layers were formed on both sides of the TiAl barrier, such that the oxide layer on the free surface of the TiAl layer correlates with TiAlOx, while the oxide layer at the TiAl/Cu interface is an Al2O3-rich layer. This double amorphous barrier layer structure effectively prevents oxygen penetration towards the underlying Cu and Ta layers. The TiAlOx interfacial layer, which has a relatively low dielectric constant compared with BST, reduced the total capacitance of the BST thin film capacitors. In addition, the layered electrode-oxide interface roughening observed during the growth of BST films at high temperature, due to copper grain growth, resulted in large dielectric loss on the fabricated BST capacitors. These problems were solved by growing the BST layer at 450 °C followed by a rapid thermal annealing at 700 °C. This process significantly reduced the thickness of the TiAlOx layer and interface roughness resulting in BST capacitors exhibiting properties suitable for the fabrication of high-performance high-frequency devices. In summary, relatively high dielectric constant (280), low

Materials science and integration bases for fabrication of (BaxSr1-x)TiO3 thin film capacitors with layered Cu-based electrodes

International Nuclear Information System (INIS)

Fan, W.; Kabius, B.; Hiller, J.M.; Saha, S.; Carlisle, J.A.; Auciello, O.; Chang, R.P.H.; Ramesh, R.

2003-01-01

The synthesis and fundamental material properties of layered TiAl/Cu/Ta electrodes were investigated to achieve the integration of Cu electrodes with high-dielectric constant (κ) oxide thin films for application to the fabrication of high-frequency devices. The Ta layer is an excellent diffusion barrier to inhibit deleterious Cu diffusion into the Si substrate, while the TiAl layer provides an excellent barrier against oxygen diffusion into the Cu layer to inhibit Cu oxidation during the growth of the high-κ layer in an oxygen atmosphere. Polycrystalline (Ba x Sr 1-x )TiO 3 (BST) thin films were grown on the Cu-based bottom electrode by rf magnetron sputtering at temperatures in the range 400-600 deg. C in oxygen, to investigate the performance of BST/Cu-based capacitors. Characterization of the Cu-based layered structure using surface analytical methods showed that two amorphous oxide layers were formed on both sides of the TiAl barrier, such that the oxide layer on the free surface of the TiAl layer correlates with TiAlO x , while the oxide layer at the TiAl/Cu interface is an Al 2 O 3 -rich layer. This double amorphous barrier layer structure effectively prevents oxygen penetration towards the underlying Cu and Ta layers. The TiAlO x interfacial layer, which has a relatively low dielectric constant compared with BST, reduced the total capacitance of the BST thin film capacitors. In addition, the layered electrode-oxide interface roughening observed during the growth of BST films at high temperature, due to copper grain growth, resulted in large dielectric loss on the fabricated BST capacitors. These problems were solved by growing the BST layer at 450 deg. C followed by a rapid thermal annealing at 700 deg. C. This process significantly reduced the thickness of the TiAlO x layer and interface roughness resulting in BST capacitors exhibiting properties suitable for the fabrication of high-performance high-frequency devices. In summary, relatively high

Temperature-induced assembly of semiconductor nanocrystals into fractal architectures and thermoelectric power properties in Au/Ge bilayer films

Energy Technology Data Exchange (ETDEWEB)

Li Quanbao; Wang Jian; Jiao Zheng [Shanghai Applied Radiation Institute, Institute of Nanochemistry and Nanobiology, School of Environmental and Chemical Engineering, Shanghai University, Shanghai 200444 (China); Wu Minghong, E-mail: mhwu@staff.shu.edu.cn [Shanghai Applied Radiation Institute, Institute of Nanochemistry and Nanobiology, School of Environmental and Chemical Engineering, Shanghai University, Shanghai 200444 (China); Shek, Chan-Hung; Lawrence Wu, C.M.; Lai, Joseph K.L. [Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon Tong (Hong Kong); Chen Zhiwen, E-mail: cnzwchen@yahoo.com.cn [Shanghai Applied Radiation Institute, Institute of Nanochemistry and Nanobiology, School of Environmental and Chemical Engineering, Shanghai University, Shanghai 200444 (China); Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon Tong (Hong Kong)

2011-08-15

Highlights: > Ge fractal architectures were achieved by temperature-induced assembly. > The appearance of fractal architectures influences the thermoelectric power. > But it has little effect on the resistivity. > The values of the superlocalization exponent were within 1.22 {<=} {xi} {<=} 1.29. > It was higher than expected for two-dimension fractal system. - Abstract: Fractal architectures of semiconductor nanocrystals were successfully achieved by temperature-induced assembly of semiconductor nanocrystals in gold/germanium (Au/Ge) bilayer films. New assessment strategies of fractal architectures are of fundamental importance in the development of micro/nano-devices. Temperature-dependent properties including resistivity and thermoelectric power (TEP) of Au/Ge bilayer films with self-similar fractal patterns were investigated in detail. Experimental results indicated that the microstructure of Au film plays an important role in the characteristics of Au/Ge bilayer films after annealing and the crystallization processes of amorphous Ge accompany by fractal formation of Ge nanocrystals via temperature-induced assembly. The appearance of fractal architectures has significantly influence on the TEP but little effect on the resistivity of the annealed bilayer film. By analysis of the data, we found that the values of superlocalization exponent are within 1.22 {<=} {xi} {<=} 1.29, which are higher than expected for two-dimension fractal systems. The results provided possible evidence for the superlocalization on fractal architectures in Au/Ge bilayer films. The TEP measurements are considered a more effective method than the conductivity for investigating superlocalization in a percolating system.

Studies of the Superconducting Transition in the Mo/Au-Bilayer Thin Films

Science.gov (United States)

Sadleir, John; Smith, Stephen; Iyomoto, naoko; Bandler, Simon; Chervenak, Jay; Brown, Ari; Brekowsky, Regis; Kilbourne, Caroline; Robinson, Ian

2007-01-01

At NASA Goddard, microcalorimeter arrays using superconducting transition edge sensor thermometers (TESs) are under development for high energy resolution X-ray astrophysics applications. We report on our studies of the superconducting transition in our Mo/Au-bilayer TES films including: low current measurements of the superconducting bilayer's resistance transition versus temperature on pixels with different normal metal absorber attachment designs and measured temperature scaling of the critical current and critical magnetic field.

Microstructural and electronic properties of highly oriented Tl0.5Pb0.5Sr2CaCu2O7 films on LaAlO3

International Nuclear Information System (INIS)

Kountz, D.J.; Gai, P.L.; Wilker, C.; Holstein, W.L.; Pellicone, F.M.

1992-01-01

Epitaxial T1 0.5 Pb 0.5 Sr 2 CaCu 2 O 7 films produced by rf magnetron sputtering followed by annealing in the presence of thallium oxide vapor have been produced on (100) LaAl0 3 substrates. These films are highly c-axis oriented with rocking curve full width at half maximum less than 0.4 degrees. The resulting two copper oxide layer films exhibit microwave surface resistance at 10 GHz of 60 ± 3 μΩ at 4.2 K and 498 ± 10 μΩ at 70 K (T c =88 ± 2 K). The degree of lattice mismatch between this phase and the LaAl0 3 substrate is very small resulting in epitaxial thin films. This material exhibits very little intrinsic defect structure

Structure and phase composition of Al-Ce-Cu system alloys in range of quasi-binary Al-Al8CeCu4 section

International Nuclear Information System (INIS)

Belov, N.A.; Khvan, A.V.

2007-01-01

The phase diagram of the Al-Cu-Ce system in the quasibinary section area of Al-Al 8 CeCu 4 has been investigated by metallographic, thermal, micro-X-ray spectral and X-ray structural analyses. The parameters of the eutectic reaction L→(Al)+CeCu 4 Al 8 : T=610 Deg C were found out; the composition was 14% Cu and 7% Ce. This eutectics is of a disperse structure and the ternary compound contained is capable of fragmentation and spheroidizing in the heating process (starting from 540 Deg C). It was demonstrated that the area of optimal (Al)+CeCu 4 Al 8 eutectics-based alloy compositions was within the narrow limits. That is related to the fact that at a comparatively little variation of the Cu:Ce=2 ratio solidus sharply decreases and, as a result, the crystallization interval considerably extends [ru

Electromigration in Cu(Al) and Cu(Mn) damascene lines

Science.gov (United States)

Hu, C.-K.; Ohm, J.; Gignac, L. M.; Breslin, C. M.; Mittal, S.; Bonilla, G.; Edelstein, D.; Rosenberg, R.; Choi, S.; An, J. J.; Simon, A. H.; Angyal, M. S.; Clevenger, L.; Maniscalco, J.; Nogami, T.; Penny, C.; Kim, B. Y.

2012-05-01

The effects of impurities, Mn or Al, on interface and grain boundary electromigration (EM) in Cu damascene lines were investigated. The addition of Mn or Al solute caused a reduction in diffusivity at the Cu/dielectric cap interface and the EM activation energies for both Cu-alloys were found to increase by about 0.2 eV as compared to pure Cu. Mn mitigated and Al enhanced Cu grain boundary diffusion; however, no significant mitigation in Cu grain boundary diffusion was observed in low Mn concentration samples. The activation energies for Cu grain boundary diffusion were found to be 0.74 ± 0.05 eV and 0.77 ± 0.05 eV for 1.5 μm wide polycrystalline lines with pure Cu and Cu (0.5 at. % Mn) seeds, respectively. The effective charge number in Cu grain boundaries Z*GB was estimated from drift velocity and was found to be about -0.4. A significant enhancement in EM lifetimes for Cu(Al) or low Mn concentration bamboo-polycrystalline and near-bamboo grain structures was observed but not for polycrystalline-only alloy lines. These results indicated that the existence of bamboo grains in bamboo-polycrystalline lines played a critical role in slowing down the EM-induced void growth rate. The bamboo grains act as Cu diffusion blocking boundaries for grain boundary mass flow, thus generating a mechanical stress-induced back flow counterbalancing the EM force, which is the equality known as the "Blech short length effect."

Reaction products between Bi-Sr-Ca-Cu-oxide thick films and alumina substrates

International Nuclear Information System (INIS)

Alarco, J.A.; Ilushechkin, A.; Yamashita, T.; Bhargava, A.; Barry, J.; Mackinnon, I.D.R.

1997-01-01

The structure and composition of reaction products between Bi-Sr-Ca-Cu-oxide (BSCCO) thick films and alumina substrates have been characterized using a combination of electron diffraction, scanning electron microscopy and energy dispersive X-ray spectrometry (EDX). Sr and Ca are found to be the most reactive cations with alumina. Sr 4 Al 6 O 12 SO 4 is formed between the alumina substrates and BSCCO thick films prepared from paste with composition close to Bi-2212 (and Bi-2212+10 wt.% Ag). For paste with composition close to Bi(Pb)-2223 +20 wt.% Ag, a new phase with f.c.c. structure, lattice parameter about a=24.5 A and approximate composition Al 3 Sr 2 CaBi 2 CuO x has been identified in the interface region. Understanding and control of these reactions is essential for growth of high quality BSCCO thick films on alumina. (orig.)

The crystallisation of Cu{sub 2}ZnSnS{sub 4} thin film solar cell absorbers from co-electroplated Cu-Zn-Sn precursors

Energy Technology Data Exchange (ETDEWEB)

Schurr, R. [Chair for Crystallography and Structural Physics, University of Erlangen-Nuernberg, Staudtstrasse 3, D-91058 Erlangen (Germany)], E-mail: schurr@krist.uni-erlangen.de; Hoelzing, A.; Jost, S.; Hock, R. [Chair for Crystallography and Structural Physics, University of Erlangen-Nuernberg, Staudtstrasse 3, D-91058 Erlangen (Germany); Voss, T.; Schulze, J.; Kirbs, A. [Atotech Deutschland GmbH, Erasmusstrasse 20, D-10553 Berlin (Germany); Ennaoui, A.; Lux-Steiner, M. [Heterogeneous Material Systems SE II, Hahn-Meitner-Institut, Glienickerstr.100, D-14109 Berlin (Germany); Weber, A.; Koetschau, I.; Schock, H.-W. [Technology SE III, Hahn-Meitner-Institut, Glienickerstr.100, D-14109 Berlin (Germany)

2009-02-02

The best CZTS solar cell so far was produced by co-sputtering continued with vapour phase sulfurization method. Efficiencies of up to 5.74% were reached by Katagiri et al. The one step electrochemical deposition of copper, zinc, tin and subsequent sulfurization is an alternative fabrication technique for the production of Cu{sub 2}ZnSnS{sub 4} based thin film solar cells. A kesterite based solar cell (size 0.5 cm{sup 2}) with a conversion efficiency of 3.4% (AM1.5) was produced by vapour phase sulfurization of co-electroplated Cu-Zn-Sn films. We report on results of in-situ X-ray diffraction (XRD) experiments during crystallisation of kesterite thin films from electrochemically co-deposited metal films. The kesterite crystallisation is completed by the solid state reaction of Cu{sub 2}SnS{sub 3} and ZnS. The measurements show two different reaction paths depending on the metal ratios in the as deposited films. In copper-rich metal films Cu{sub 3}Sn and CuZn were found after electrodeposition. In copper-poor or near stoichiometric precursors additional Cu{sub 6}Sn{sub 5} and Sn phases were detected. The formation mechanism of Cu{sub 2}SnS{sub 3} involves the binary sulphides Cu{sub 2-x}S and SnS{sub 2} in the absence of the binary precursor phase Cu{sub 6}Sn{sub 5}. The presence of Cu{sub 6}Sn{sub 5} leads to a preferred formation of Cu{sub 2}SnS{sub 3} via the reaction educts Cu{sub 2-x}S and SnS{sub 2} in the presence of a SnS{sub 2}(Cu{sub 4}SnS{sub 6}) melt. The melt phase may be advantageous in crystallising the kesterite, leading to enhanced grain growth in the presence of a liquid phase.

Combinatorial development of antibacterial Zr-Cu-Al-Ag thin film metallic glasses.

Science.gov (United States)

Liu, Yanhui; Padmanabhan, Jagannath; Cheung, Bettina; Liu, Jingbei; Chen, Zheng; Scanley, B Ellen; Wesolowski, Donna; Pressley, Mariyah; Broadbridge, Christine C; Altman, Sidney; Schwarz, Udo D; Kyriakides, Themis R; Schroers, Jan

2016-05-27

Metallic alloys are normally composed of multiple constituent elements in order to achieve integration of a plurality of properties required in technological applications. However, conventional alloy development paradigm, by sequential trial-and-error approach, requires completely unrelated strategies to optimize compositions out of a vast phase space, making alloy development time consuming and labor intensive. Here, we challenge the conventional paradigm by proposing a combinatorial strategy that enables parallel screening of a multitude of alloys. Utilizing a typical metallic glass forming alloy system Zr-Cu-Al-Ag as an example, we demonstrate how glass formation and antibacterial activity, two unrelated properties, can be simultaneously characterized and the optimal composition can be efficiently identified. We found that in the Zr-Cu-Al-Ag alloy system fully glassy phase can be obtained in a wide compositional range by co-sputtering, and antibacterial activity is strongly dependent on alloy compositions. Our results indicate that antibacterial activity is sensitive to Cu and Ag while essentially remains unchanged within a wide range of Zr and Al. The proposed strategy not only facilitates development of high-performing alloys, but also provides a tool to unveil the composition dependence of properties in a highly parallel fashion, which helps the development of new materials by design.

3-D modelling of a bilayer heterojunction organic solar cell based on ...

African Journals Online (AJOL)

The thin film multilayer stacking theory is applied to the bilayer heterojunction organic solar cell, with the optical matrix of the Abeles theory leading to new expression of generation rate and density of exciton photogenerated in the organic photoactive layer of CuPc/C60. The excitons density is investigated considering the ...

Thermodynamic properties of Al-Mn, Al-Cu, and Al-Fe-Cu melts and their relations to liquid and quasicrystal structure

International Nuclear Information System (INIS)

Zaitsev, A I; Zaitseva, N E; Shimko, R Yu; Arutyunyan, N A; Dunaev, S F; Kraposhin, V S; Lam, Ha Thanh

2008-01-01

Thermodynamic properties of molten Al-Mn, Al-Cu and Al-Fe-Cu alloys in a wide temperature range of 1123-1878 K and the whole range of concentrations have been studied using the integral effusion method and Knudsen mass spectrometry. Thermodynamic functions of melts were described by the associated solution model. The possibility of icosahedral quasicrystal (i-QC) precipitation from liquid Al-Mn and Al-Cu-Fe alloys was found to be a consequence of the existence in liquid associates (clusters). A geometric model is suggested for the structure of associates in liquid

Magnetic and exchange bias properties of YCo thin films and IrMn/YCo bilayers

Science.gov (United States)

Venkat Narayana, M.; Manivel Raja, M.; Jammalamadaka, S. Narayana

2018-02-01

We report on the structural and magnetic properties of YCo thin films and IrMn/YCo bilayers. X-ray diffraction infer that all the films are amorphous in nature. Magnetization versus magnetic field measurements reveal room temperature soft ferromagnetism in all the YCo films. Thin films which were grown at 100 W sputter power with growth rates of 0.677, 0.694 and 0.711 Å/sec show better morphology and composition than 50 W (0.333, 0.444 and 0.277 Å/sec) grown films. Perpendicular exchange bias in as deposited bilayers is evident for IrMn/YCo bilayers. Exchange bias (EB) decreases in case of in plane measurements and enhances for out of plane measurements after perpendicular field annealing. EB is more in case of out of plane direction due to large perpendicular anisotropy in comparison with in plane direction. Above the critical thickness, EB variation is explained on the basis of random field model in the Heisenberg regime, which has been proposed by Malozemoff. Indeed there exists an inverse relationship between EB and IrMn layer thickness. Evidenced vertical shift apart from the horizontal shift for magnetization loops is attributed to frozen magnetic moments in one of the layers at the interface. Present results would prove to be helpful in spintronic device applications.

CuGaS2 and CuGaS2–ZnS Porous Layers from Solution-Processed Nanocrystals

Science.gov (United States)

Guardia, Pablo; Estradé, Sònia; Peiró, Francesca; Cabot, Andreu

2018-01-01

The manufacturing of semiconducting films using solution-based approaches is considered a low cost alternative to vacuum-based thin film deposition strategies. An additional advantage of solution processing methods is the possibility to control the layer nano/microstructure. Here, we detail the production of mesoporous CuGaS2 (CGS) and ZnS layers from spin-coating and subsequent cross-linking through chalcogen-chalcogen bonds of properly functionalized nanocrystals (NCs). We further produce NC-based porous CGS/ZnS bilayers and NC-based CGS–ZnS composite layers using the same strategy. Photoelectrochemical measurements are used to demonstrate the efficacy of porous layers, and particularly the CGS/ZnS bilayers, for improved current densities and photoresponses relative to denser films deposited from as-produced NCs. PMID:29621198

Microstructure and opto-electric properties of Cu/ITO thin films

International Nuclear Information System (INIS)

Wang Xian; Li Junlei; Shi Shiwei; Song Xueping; Cui Jingbiao; Sun Zhaoqi

2012-01-01

Highlights: ► We prepared Cu/ITO films with different Cu layer thickness. ► We analyzed the relation between opto-electric properties and roughness of the films. ► The Cu-16.1 nm/ITO film shows excellent optical and electric properties. ► Cu/ITO films have great application prospects in new-type transflective displays. - Abstract: Cu/ITO thin films were deposited on glass and silicon substrates by DC and RF magnetron sputtering at room temperature. X-ray diffraction results showed that the films were amorphous. Both of SEM images and 3D Profilometer images indicated that the surface morphology of the ITO films had been affected by the Cu layer. The optical and electric properties of the Cu/ITO films changed significantly with the variation of Cu layer thickness. Cu-5.4 nm/ITO film exhibited the highest optical transmittance of 62.9% at 550 nm and the lowest sheet resistance of 96 Ω/□, whereas Cu-16.1 nm/ITO film showed the highest average reflectance of 24.0% and the lowest resistance of 27.4 Ω/□. Based on our analysis, it was evaluated that Cu layer had an important effect on the electrical and optical properties of ITO thin films.

Formation of a ZnS/Zn(S,O) bilayer buffer on CuInS2 thin film solar cell absorbers by chemical bath deposition

Science.gov (United States)

Bär, M.; Ennaoui, A.; Klaer, J.; Kropp, T.; Sáez-Araoz, R.; Allsop, N.; Lauermann, I.; Schock, H.-W.; Lux-Steiner, M. C.

2006-06-01

The application of Zn compounds as buffer layers was recently extended to wide-gap CuInS2 (CIS) based thin film solar cells. Using an alternative chemical deposition route for the buffer preparation aiming at the deposition of a single-layer, nominal ZnS buffer without the need for any toxic reactants such as hydrazine has helped us to achieve a similar efficiency as respective CdS-buffered reference devices. In order to shed light on the differences of other Zn-compound buffers deposited in conventional chemical baths [chemical bath deposition (CBD)] compared to the buffer layers deposited by this alternative CBD process, the composition of the deposited buffers was investigated by x-ray excited Auger electron and x-ray photoelectron spectroscopy to potentially clarify their superiority in terms of device performance. We have found that in the early stages of this alternative CBD process a thin ZnS layer is formed on the CIS, whereas in the second half of the CBD the growth rate is greatly increased and Zn(S,O) with a ZnS/(ZnS+ZnO) ratio of ~80% is deposited. Thus, a ZnS/Zn(S,O) bilayer buffer is deposited on the CIS thin film solar cell absorbers by the alternative chemical deposition route used in this investigation. No major changes of these findings after a postannealing of the buffer/CIS sample series and recharacterization could be identified.

Microhardness variation and related microstructure in Al-Cu alloys prepared by HF induction melting and RF sputtering

Science.gov (United States)

Boukhris, N.; Lallouche, S.; Debili, M. Y.; Draissia, M.

2009-03-01

The materials under consideration are binary aluminium-copper alloys (10 at% to 90.3 at%Cu) produced by HF melting and RF magnetron sputtering. The resulting micro structures have been observed by standard metallographic techniques, X-ray powder diffraction, scanning electron microscopy and transmission electron microscopy. Vickers microhardness of bulk Al-Cu alloys reaches a maximum of 1800 MPa at 70.16 at%Cu. An unexpected metastable θ ' phase has been observed within aluminium grain in Al-37 at%Cu. The mechanical properties of a family of homogeneous Al{1-x}Cu{x} (0 Al-Cu targets have been investigated. The as-deposited microstructures for all film compositions consisted of a mixture of the two expected face-centred-cubic (fcc) Al solid solution and tetragonal θ (Al{2}Cu) phases. The microhardness regularly increases and the grain size decreases both with copper concentration. This phenomenon of significant mechanical strengthening of aluminium by means of copper is essentially due to a combination between solid solution effects and grain size refinement. This paper reports some structural features of different Al-Cu alloys prepared by HF melting and RF magnetron on glass substrate sputtering.

Growth feature of ionic nitrogen doped CN_x bilayer films with Ti and TiN interlayer by pulse cathode arc discharge

International Nuclear Information System (INIS)

Zhou, Bing; Liu, Zhubo; Piliptsou, D.G.; Rogachev, A.V.; Yu, Shengwang; Wu, Yanxia; Tang, Bin; Rudenkov, A.S.

2016-01-01

Graphical abstract: - Highlights: • Ti/ and TiN/CN_x (N"+) bilayers are prepared at various frequencies by pulse cathode arc. • Ti interlayer facilitates the introduction of N atoms into the CN_x (N"+) films. • The most N-sp"2C bonds (mainly graphite-like N) present in the TiN/CN_x (N"+, 3 Hz) film. • Ti/CN_x (N"+, 3 Hz) bilayer possesses small size and disordering of Csp"2 clusters. • The higher hardness and the lower stress presents in the TiN/CN_x (N"+, 10 Hz) bilayer. - Abstract: Using nano-scaled Ti and TiN as interlayer, ionic nitrogen doped carbon (CN_x (N"+)) bilayer films were prepared at various pulse frequencies by cathode arc technique. Elemental distribution at the interface, bonding compositions, microstructure, and mechanical properties of CN_x (N"+) bilayer films were investigated in dependence of interlayer and pulse frequency by Auger electron spectroscopy, X-ray photoelectron spectroscopy, Raman spectroscopy, nanoindentation, and surface profilometer. The results showed that the diffusion extent of C atoms at the interface of CN_x (N"+) bilayers is higher than for the α-C and CN_x (N_2) bilayers with the same interlayer. Nitrogen atoms could diffuse throughout the pre-deposited Ti and TiN layers into the Si substrate for all CN_x (N"+) bilayers. Ti interlayer facilitates the introduction of N atoms into the CN_x (N"+) films and exhibits a certain catalytic effect on the coordination of N atoms with sp"2- and sp"3-C binding. More nitrogenated and intense CN bonding configurations (mainly graphite-like N) form in the TiN/CN_x (N"+) bilayer. Ti/CN_x (N"+) bilayer prepared at low frequency possesses small size and disordering of Csp"2 clusters but TiN interlayer weakens the formation of Csp"2 bonding and increases the disordering of Csp"2 clusters in the films. The residual stress in the bilayer is lower than for CN_x (N"+) monolayer. The higher hardness and the lower residual stress are present in the TiN/CN_x (N"+, 10 Hz) bilayer.

Strongly compressed Bi (111) bilayer films on Bi{sub 2}Se{sub 3} studied by scanning tunneling microscopy

Energy Technology Data Exchange (ETDEWEB)

Zhang, K. F.; Yang, Fang; Song, Y. R. [Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Department of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240 (China); Liu, Canhua; Qian, Dong; Gao, C. L.; Jia, Jin-Feng [Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Department of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240 (China); Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093 (China)

2015-09-21

Ultra-thin Bi films show exotic electronic structure and novel quantum effects, especially the widely studied Bi (111) film. Using reflection high-energy electron diffraction and scanning tunneling microscopy, we studied the structure and morphology evolution of Bi (111) thin films grown on Bi{sub 2}Se{sub 3}. A strongly compressed, but quickly released in-plane lattice of Bi (111) is found in the first three bilayers. The first bilayer of Bi shows a fractal growth mode with flat surface, while the second and third bilayer show a periodic buckling due to the strong compression of the in-plane lattice. The lattice slowly changes to its bulk value with further deposition of Bi.

CuInS2 thin films obtained through the annealing of chemically deposited In2S3-CuS thin films

International Nuclear Information System (INIS)

Pena, Y.; Lugo, S.; Calixto-Rodriguez, M.; Vazquez, A.; Gomez, I.; Elizondo, P.

2011-01-01

In this work, we report the formation of CuInS 2 thin films on glass substrates by heating chemically deposited multilayers of copper sulfide (CuS) and indium sulfide (In 2 S 3 ) at 300 and 350 deg. C in nitrogen atmosphere at 10 Torr. CIS thin films were prepared by varying the CuS layer thickness in the multilayers with indium sulfide. The XRD analysis showed that the crystallographic structure of the CuInS 2 (JCPDS 27-0159) is present on the deposited films. From the optical analysis it was estimated the band gap value for the CIS film (1.49 eV). The electrical conductivity varies from 3 x 10 -8 to 3 Ω -1 cm -1 depending on the thickness of the CuS film. CIS films showed p-type conductivity.

Optical response of Al/Ti bilayer transition edge sensors

International Nuclear Information System (INIS)

Zhang Qing-Ya; Liu Jian-She; Dong Wen-Hui; He Gen-Fang; Li Tie-Fu; Chen Wei; Wang Tian-Shun; Zhou Xing-Xiang

2014-01-01

We report the optical response characteristics of Al/Ti bilayer transition edge sensors (TESs), which are mainly comprised of Al/Ti bilayer thermometers and suspended SiN membranes for thermal isolation. The measurement was performed in a 3 He sorption refrigerator and the device's response to optical pulses was investigated using a pulsed laser source. Based on these measurements, we obtained the effective recovery time (τ eff ) of the devices at different biases and discussed the dependence of τ eff on the bias. The device with a 940 μm × 940 μm continuous suspended SiN membrane demonstrated a fast response speed with τ eff = 3.9 μs, which indicates a high temperature sensitivity (α = T/R · dR/dT = 326). The results also showed that the TES exhibits good linearity under optical pulses of variable widths. (interdisciplinary physics and related areas of science and technology)

An investigation on silar Cu(In1-xAlx)Se2 thin films

International Nuclear Information System (INIS)

Dhanam, M.; Kavitha, B.; Velumani, S.

2010-01-01

Cu(In 1-x Al x )Se 2 [CIAS] thin films were prepared for the first time by successive ionic layer adsorption and reaction [SILAR] method with two different dipping cycles. The thickness of the films was measured by gravimetric technique. The structural, morphological, compositional, optical transition and electrical investigation of SILAR CIAS thin films with respect to two different dipping cycles have been discussed in this paper.

Pseudomorphy, surface alloys and the role of elementary clusters on the domain orientations in the Cu/Al13Co4(100) system

International Nuclear Information System (INIS)

Addou, R; Shukla, A K; De Weerd, M-C; Fournee, V; Dubois, J-M; Ledieu, J; Gille, P; Widmer, R; Groening, O

2011-01-01

We have used the pseudo-tenfold surface of the orthorhombic Al 13 Co 4 crystal as a template for the adsorption of Cu thin films of various thicknesses deposited at different temperatures. This study has been carried out by means of low energy electron diffraction (LEED), scanning tunnelling microscopy (STM), x-ray photoelectron spectroscopy (XPS) and x-ray photoelectron diffraction (XPD). From 300 to 573 K, Cu adatoms grow pseudomorphically up to one monolayer. At 300 K, the β-Al(Cu, Co) phase appears for coverages greater than one monolayer. For higher temperature deposition, the β-Al(Cu, Co) phase further transforms into the γ-Al 4 Cu 9 phase. Both β and γ phases grow as two (110) domains rotated by 72 0 ± 1 0 from each other. Instead of following the substrate symmetry, it is the orientations of the bipentagonal motifs present on the clean Al 13 Co 4 (100) surface that dictate the growth orientation of these domains. The initial bulk composition and structural complexity of the substrate have a minor role in the formation of the γ-Al 4 Cu 9 phase as long as the amount of Al and the Cu film thickness reach a critical stoichiometry. (paper)

Growth and magnetic properties dependence of the Co–Cu/Cu films electrodeposited under high magnetic fields

Energy Technology Data Exchange (ETDEWEB)

Franczak, Agnieszka, E-mail: agnieszka.franczak@mtm.kuleuven.be [Laboratoire d’Ingénierie et Sciences des Matériaux (LISM EA 4695), Université de Reims Champagne-Ardenne, UFR Sciences et Naturelles, Bat. 6, Moulin de la Housse, BP 1039, 51687 Reims Cedex 2 (France); Department of Materials Science (MTM), KU Leuven, Kasteelpark Arenberg 44, 3001 Haverlee (Leuven) (Belgium); Levesque, Alexandra [Laboratoire d’Ingénierie et Sciences des Matériaux (LISM EA 4695), Université de Reims Champagne-Ardenne, UFR Sciences et Naturelles, Bat. 6, Moulin de la Housse, BP 1039, 51687 Reims Cedex 2 (France); Zabinski, Piotr [Laboratory of Physical Chemistry and Electrochemistry, Faculty of Non-Ferrous Metals, AGH University of Science and Technology, al. A. Mickiewicza 30, 30059 Krakow (Poland); Li, Donggang [Key Laboratory of Electromagnetic Processing of Materials (Ministry of Education), Northeastern University, 314 Box, 110004 Shenyang (China); Czapkiewicz, Maciej [Department of Electronics, AGH University of Science and Technology, al. A. Mickiewicza 30, 30059 Krakow (Poland); Kowalik, Remigiusz [Laboratory of Physical Chemistry and Electrochemistry, Faculty of Non-Ferrous Metals, AGH University of Science and Technology, al. A. Mickiewicza 30, 30059 Krakow (Poland); Bohr, Frédéric [Laboratoire d’Ingénierie et Sciences des Matériaux (LISM EA 4695), Université de Reims Champagne-Ardenne, UFR Sciences et Naturelles, Bat. 6, Moulin de la Housse, BP 1039, 51687 Reims Cedex 2 (France); and others

2015-07-15

The present work is focused on the investigations of magnetic properties dependence on microstructure of Co–Cu/Cu films electrodeposited under superimposed high magnetic field. The experimental results indicate a strong effect of an external magnetic field on the morphology of deposited films, more precisely on the Co:Cu ratio that determines the film growth. It is shown that the Co–Cu/Cu films electrodeposited without superimposed magnetic field consisted of two clearly visible features: compact film with incorporated granular particles. Under a superimposed external high magnetic field the privilege growth of the particles was induced. As a consequence, development of the well-defined branched structure of Co–Cu/Cu film was observed. In contrary, the phase compositional investigations do not reveal any changes in the phase formation during electrodeposition under magnetic field conditions. Thus, it is assumed that a strong growth of Co–Cu/Cu films in (111) direction under magnetic or non-magnetic electrodeposition conditions is related with the growth of Cu (111) plane and embedded into it some of the Co fcc atoms of same (111) orientation, as well as the Co hcp atoms that grows in the (002) direction. This non-equilibrium growth of Co–Cu/Cu films under magnetic deposition conditions affects strongly the magnetic properties of deposited films, revealing that films obtained under magnetic fields higher than 3 T were no more magnetic materials. - Highlights: • Co–Cu/Cu electrodeposits were obtained at elevated temperature under HMFs. • The effects of HMFs on microstructure and magnetic properties were investigated. • Interesting morphological changes due to HMFs has been observed. • Changes in Co:Cu ratio due to HMFs modified the magnetic properties of deposits.

Growth and magnetic properties dependence of the Co–Cu/Cu films electrodeposited under high magnetic fields

International Nuclear Information System (INIS)

Franczak, Agnieszka; Levesque, Alexandra; Zabinski, Piotr; Li, Donggang; Czapkiewicz, Maciej; Kowalik, Remigiusz; Bohr, Frédéric

2015-01-01

The present work is focused on the investigations of magnetic properties dependence on microstructure of Co–Cu/Cu films electrodeposited under superimposed high magnetic field. The experimental results indicate a strong effect of an external magnetic field on the morphology of deposited films, more precisely on the Co:Cu ratio that determines the film growth. It is shown that the Co–Cu/Cu films electrodeposited without superimposed magnetic field consisted of two clearly visible features: compact film with incorporated granular particles. Under a superimposed external high magnetic field the privilege growth of the particles was induced. As a consequence, development of the well-defined branched structure of Co–Cu/Cu film was observed. In contrary, the phase compositional investigations do not reveal any changes in the phase formation during electrodeposition under magnetic field conditions. Thus, it is assumed that a strong growth of Co–Cu/Cu films in (111) direction under magnetic or non-magnetic electrodeposition conditions is related with the growth of Cu (111) plane and embedded into it some of the Co fcc atoms of same (111) orientation, as well as the Co hcp atoms that grows in the (002) direction. This non-equilibrium growth of Co–Cu/Cu films under magnetic deposition conditions affects strongly the magnetic properties of deposited films, revealing that films obtained under magnetic fields higher than 3 T were no more magnetic materials. - Highlights: • Co–Cu/Cu electrodeposits were obtained at elevated temperature under HMFs. • The effects of HMFs on microstructure and magnetic properties were investigated. • Interesting morphological changes due to HMFs has been observed. • Changes in Co:Cu ratio due to HMFs modified the magnetic properties of deposits

Fluorescence lifetime, dipole orientation and bilayer polymer films

Science.gov (United States)

Ho, Xuan Long; Chen, Po-Jui; Woon, Wei-Yen; White, Jonathon David

2017-10-01

Bilayer films consisting of the optically transparent polymers, polystyrene (PS) and poly(methyl methacrylate) (PMMA) were spin-cast on glass substrates. The upper 13.5 nm layer (PS) was lightly doped with Rhodamine-6 G (RH6G) or MEH-PPV. While the fluorescence of MEH-PPV was independent of PMMA thickness, the lifetime of RH6G increased 3-fold as the underlying PMMA thickness increased from 0 to 500 nm while the collected flux decreased suggesting a reorientation of the smaller molecule's dipole with respect to the air-polymer interface with PMMA thickness. This suggests lifetime may find application for nondestructive thickness measurements of transparent films with sub-micron lateral resolution and large range.

Abnormal electrical resistivity in γ-TiAl thin films deposited by magnetron sputtering

International Nuclear Information System (INIS)

Alford, T.L.; Gadre, K.S.; Kim, H.C.; Deevi, S.C.

2003-01-01

Thin films of γ-TiAl are being considered as a potential conductor and/or diffusion barrier for high temperature electronics because of their high melting points and high oxidation resistance. However, it is not possible to form pure γ-TiAl thin films by thermal annealing of Al/Ti bilayers. This study, however, demonstrates the formation of γ-TiAl thin films by dc magnetron sputtering of a compound target. X-ray diffractometry and Rutherford backscattering spectrometry analyses confirm the γ-TiAl phase formation, composition, and thermal stability in vacuum (up to 700 deg. C, 1 h) on SiO 2 . Four-point probe resistivity measurements in vacuum show an initial increase in the resistivity with temperature up to transition temperature for the γ-TiAl thin films. At higher temperatures a decrease in resistivity with additional heating (i.e., negative temperature coefficient of resistivity, TCR) is seen. The values of dρ/dT are typically on the order of -0.32 μΩ cm/ deg. C between 200 and 550 deg. C. At the highest temperature, a minimum value of resistivity of ∼13 μΩ cm is obtained; this value is about one half the value of bulk TiAl at room temperatures. The negative TCR, low resistivity values at high temperatures, and temperature stability are not typically seen in bulk TiAl. This abnormal electrical property is explained using a modified model for a thermally activated polaron-hopping mechanism

Bilayered Films Based on Novel Polymer Derivative for Improved Ocular Therapy of Gatifloxacin

Directory of Open Access Journals (Sweden)

Naval Dinesh Aher

2014-01-01

Full Text Available Context. Thiomers could prove to be suitable mucoadhesives for fabrication of ocular inserts. Objective. The study intends to explore the application of thiolated sodium alginate (TSA to the preparation of bilayered ocular inserts of gatifloxacin. Methods. Cysteine moieties were grafted onto sodium alginate (SA and the resultant thiomer was characterized for relevant physicochemical properties. Bilayered inserts were fabricated with a mucoadhesive immediate release layer composed of either SA or TSA and a sustained release layer composed of acrylates. Films were prepared by solvent evaporation and evaluated for mechanical properties, drug content, and in vitro release. Results and Discussion. The synthesized TSA possessed 248.80±49.7 μmol thiol groups/gm and its solutions thickened on standing due to disulphide bridging. Its films showed improved mucoadhesion and also a strikingly beneficial property of resisting erosion and remaining as a hydrated adhesive layer for the duration of drug release. The bilayered films were found to be flexible, with good folding endurance, uniform thickness, and appropriate drug content, and showed a release of about 80% of loaded gatifloxacin in 12 h. Conclusion. The study demonstrates promise in employing thiolated polymer in conjunction with acrylates for the design of ocular inserts for twice a day therapy with gatifloxacin.

Bilayered Films Based on Novel Polymer Derivative for Improved Ocular Therapy of Gatifloxacin

Science.gov (United States)

Aher, Naval Dinesh; Nair, Hema Ajit

2014-01-01

Context. Thiomers could prove to be suitable mucoadhesives for fabrication of ocular inserts. Objective. The study intends to explore the application of thiolated sodium alginate (TSA) to the preparation of bilayered ocular inserts of gatifloxacin. Methods. Cysteine moieties were grafted onto sodium alginate (SA) and the resultant thiomer was characterized for relevant physicochemical properties. Bilayered inserts were fabricated with a mucoadhesive immediate release layer composed of either SA or TSA and a sustained release layer composed of acrylates. Films were prepared by solvent evaporation and evaluated for mechanical properties, drug content, and in vitro release. Results and Discussion. The synthesized TSA possessed 248.80 ± 49.7 μmol thiol groups/gm and its solutions thickened on standing due to disulphide bridging. Its films showed improved mucoadhesion and also a strikingly beneficial property of resisting erosion and remaining as a hydrated adhesive layer for the duration of drug release. The bilayered films were found to be flexible, with good folding endurance, uniform thickness, and appropriate drug content, and showed a release of about 80% of loaded gatifloxacin in 12 h. Conclusion. The study demonstrates promise in employing thiolated polymer in conjunction with acrylates for the design of ocular inserts for twice a day therapy with gatifloxacin. PMID:24516362

Investigations into the corrosion resistance of copper aluminium alloys. Effect of phosphorus as corrosion resistant third alloying element in the ternary system CuAl20P1

International Nuclear Information System (INIS)

Allwardt, A.

1997-01-01

The effect of phosphorus on the corrosion resistance of Al-bronzes is studied in detail in this work. A literature review showed that there are a lot of things known about the microstructure and the mechanical properties of Al-bronzes. In spite of their corrosion resistance the corrosion properties and the structure of the protective oxide films of Al-bronzes were seldom a matter of interest. Systematic studies of the influence of different alloying elements on the oxide film and the corrosion properties are rare. Therefore, it is not possible to predict the corrosion resistance of Al-bronzes, made by alloying particular elements. The high corrosion resistance of the new alloy CuAl 20 P 1 was the reason to investigate the influence of phosphorus on the corrosion properties of Al-bronzes in more detail. A systematic study of the microstructure and the corrosion properties of Cu, CuP x , CuAl 20 and CuAl 20 P x offers an insight into the effect of aluminium and phosphorus on the formation of the oxide film on Al-bronzes. It was found that there exists a critical amount of 1 at.-% of phosphorus. Above and below this amount the corrosion resistance becomes worse. This behaviour could be explained by XPS-and electrochemical measurements. Although there are still some questions about the influence of phosphorus on the corrosion resistance of Al-bronzes, this work has produced some important results, which in the future may be helpful to develop new high corrosion resistant Al-bronzes more efficiently: - on clean surface Al-bronze, the oxidation of Al and Cu takes place simultaneously, - Al promotes the formation of Cu 2 O but impedes the formation of Cu(II)-oxide/-hydride in neutral solutions, - P impedes the formation of Cu 2 O and as a consequence promotes the formation of aluminium oxide. This results in a higher amount of Al in the oxide film on the surface of the alloy, which leads to a better corrosion resistance. (author) figs., tabs., 106 refs

Bi-layer SixNy passivation on AlGaN/GaN HEMTs to suppress current collapse and improve breakdown

International Nuclear Information System (INIS)

Lee, K B; Green, R T; Houston, P A; Tan, W S; Uren, M J; Wallis, D J; Martin, T

2010-01-01

Si x N y deposited at low temperature was found to improve the breakdown voltage of AlGaN/GaN HEMTs at the expense of current collapse due to the presence of a high density of charge trapping states. On the other hand, stoichiometric Si 3 N 4 film deposited at high temperature was effective in mitigating current slump but no improvement in the breakdown voltage was observed. Combining the benefit of both films, a bi-layer stacked passivation has been employed on the HEMTs. Gate lag measurements revealed that the current collapse was mitigated and the breakdown voltage of the devices was found to increase from 120 V to 238 V upon passivation

Adhesion Improvement and Characterization of Magnetron Sputter Deposited Bilayer Molybdenum Thin Films for Rear Contact Application in CIGS Solar Cells

Directory of Open Access Journals (Sweden)

Weimin Li

2016-01-01

Full Text Available Molybdenum (Mo thin films are widely used as rear electrodes in copper indium gallium diselenide (CIGS solar cells. The challenge in Mo deposition by magnetron sputtering lies in simultaneously achieving good adhesion to the substrates while retaining the electrical and optical properties. Bilayer Mo films, comprising five different thickness ratios of a high pressure (HP deposited bottom layer and a low pressure (LP deposited top layer, were deposited on 40 cm × 30 cm soda-lime glass substrates by DC magnetron sputtering. We focus on understanding the effects of the individual layer properties on the resulting bilayer Mo films, such as microstructure, surface morphology, and surface oxidation. We show that the thickness of the bottom HP Mo layer plays a major role in determining the micromechanical and physical properties of the bilayer Mo stack. Our studies reveal that a thicker HP Mo bottom layer not only improves the adhesion of the bilayer Mo, but also helps to improve the film crystallinity along the preferred [110] direction. However, the surface roughness and the porosity of the bilayer Mo films are found to increase with increasing bottom layer thickness, which leads to lower optical reflectance and a higher probability for oxidation at the Mo surface.

Effect of Al doping on the magnetic and electrical properties of Zn(Cu)O based diluted magnetic semiconductors

Science.gov (United States)

Chakraborti, D.; Trichy, G.; Narayan, J.; Prater, J. T.; Kumar, D.

2007-12-01

The effect of Al doping on the magnetic properties of Zn(Cu)O based dilute magnetic semiconducting thin films has been systematically investigated. Epitaxial thin films have been deposited onto sapphire c-plane single crystals using pulsed laser deposition technique. X-ray diffraction and high resolution transmission electron microscopy studies show that the Zn(Cu,Al)O films are epitaxially grown onto (0001) sapphire substrates with a 30°/90° rotation in the basal plane. The large lattice misfit of the order of 16% is accommodated by matching integral multiples of lattice and substrate planes. In these large mismatch systems, the resulting films are fully relaxed following deposition of the first complete monolayer of ZnO (consistent with a critical thickness that is less than one monolayer). Magnetic hysteresis measurements indicate that the pure Zn(Cu)O thin films are ferromagnetic at room temperature. Doping with up to 5% Al (n type) does not significantly affect the ferromagnetism even though it results in an increase in carrier densities of more than 3 orders of magnitude, rising from 1×1017 to 1.5×1020 cm-3. However, for Al additions above 5%, a drop in net magnetization is observed. Annealing the films in an oxygen atmosphere at 600 °C also resulted in a dramatic drop in magnetic moment of the samples. These results strongly suggest that carrier induced exchange is not directly responsible for the magnetic properties of these materials. Rather, a defect mediated exchange mechanism needs to be invoked for this system.

Dynamic electrical response of YBaCuO thin films as a function of microstructure in view of applications to agile electronics

Energy Technology Data Exchange (ETDEWEB)

Abbott, F.; Degardin, A.F.; Luca, A. de; Schneegans, O.; Caristan, E.; Kreisler, A.J. [Paris-6 Univ. (France). LGEP

2001-12-01

The electrical characteristics of YBaCuO thin films sputtered on LaAlO{sub 3} and MgO single-crystal substrates have been measured using a pulsed current technique, to avoid ohmic heating effects. The results are discussed in relation with deposition temperature (for films deposited on LaAlO{sub 3}) and substrate preparation (for films deposited on MgO). In the latter case, results are also discussed in the framework of a statistical model, which provides an empirical approach for the pinning phenomena in YBaCuO films, when a static magnetic field is applied. (orig.)

Highly stable carbon-doped Cu films on barrierless Si

International Nuclear Information System (INIS)

Zhang, X.Y.; Li, X.N.; Nie, L.F.; Chu, J.P.; Wang, Q.; Lin, C.H.; Dong, C.

2011-01-01

Electrical resistivities and thermal stabilities of carbon-doped Cu films on silicon have been investigated. The films were prepared by magnetron sputtering using a Cu-C alloy target. After annealing at 400 deg. C for 1 h, the resistivity maintains a low level at 2.7 μΩ-cm and no Cu-Si reaction is detected in the film by X-ray diffraction (XRD) and transmission electron microscopy (TEM) observations. According to the secondary ion mass spectroscopy (SIMS) results, carbon is enriched near the interfacial region of Cu(C)/Si, and is considered responsible for the growth of an amorphous Cu(C)/Si interlayer that inhibits the Cu-Si inter-diffusion. Fine Cu grains, less than 100 nm, were present in the Cu(C) films after long-term and high-temperature annealings. The effect of C shows a combination of forming a self-passivated interface barrier layer and maintaining a fine-grained structure of Cu. A low current leakage measured on this Cu(C) film also provides further evidence for the carbon-induced diffusion barrier interlayer performance.

Atmospheric Pressure Spray Chemical Vapor Deposited CuInS2 Thin Films for Photovoltaic Applications

Science.gov (United States)

Harris, J. D.; Raffaelle, R. P.; Banger, K. K.; Smith, M. A.; Scheiman, D. A.; Hepp, A. F.

2002-01-01

Solar cells have been prepared using atmospheric pressure spray chemical vapor deposited CuInS2 absorbers. The CuInS2 films were deposited at 390 C using the single source precursor (PPh3)2CuIn(SEt)4 in an argon atmosphere. The absorber ranges in thickness from 0.75 - 1.0 micrometers, and exhibits a crystallographic gradient, with the leading edge having a (220) preferred orientation and the trailing edge having a (112) orientation. Schottky diodes prepared by thermal evaporation of aluminum contacts on to the CuInS2 yielded diodes for films that were annealed at 600 C. Solar cells were prepared using annealed films and had the (top down) composition of Al/ZnO/CdS/CuInS2/Mo/Glass. The Jsc, Voc, FF and (eta) were 6.46 mA per square centimeter, 307 mV, 24% and 0.35%, respectively for the best small area cells under simulated AM0 illumination.

Effects of Cu content on the photoelectrochemistry of Cu2ZnSnS4 nanocrystal thin films

International Nuclear Information System (INIS)

Khoshmashrab, Saghar; Turnbull, Matthew J.; Vaccarello, Daniel; Nie, Yuting; Martin, Spencer; Love, David A.; Lau, Po K.; Sun, Xuhui; Ding, Zhifeng

2015-01-01

Highlights: • Two compositions of CZTS were synthesized, one yielding Cu-poor and the other Cu-stoichiometric nanocrystals (NCs). • Physical and electronic properties of both films were probed using various analytical techniques. • Films comprised of Cu-poor CZTS showed tighter packing with less defects compared to those of stoichiometric-Cu. • Photoelectrochemical measurements exhibited increased photoconversion and increased photostability of the Cu-poor films. • Intensity modulated photocurrent spectroscopy showed that the Cu-deficient NCs had half the recombination rate as that of stoichiometric-Cu films. - Abstract: Cu 2 ZnSnS 4 (CZTS) nanocrystals (NCs) were prepared via a one-pot solvothermal method. Given that the composition affects the electronic properties of this p-type semiconductor, two compositional ratios were chosen from 10 designed and synthesized analogues, one yielding Cu-poor and the other Cu-stoichiometric CZTS. NCs in which the Cu concentration was slightly below stoichiometric yielded more uniform films with greater photovoltaic performance. The lower Cu content also lead to slightly better crystallinity within the film, as demonstrated by XRD, Raman spectroscopy and transmission electron microscopy. Chronophotoelectrochemical measurements indicated that both types of NC films displayed good stability; however, with a decrease in potential, an increase in resistance for the Cu-stoichiometric film was observed. As determined by intensity modulated photocurrent spectroscopy, the product separation rate of the photoinduced holes and electrons in the Cu-poor films were more than 3 times that of the Cu-stoichiometric, confirming that the lower Cu content led to an improved photoperformance

Diffusion and adhesion properties of Cu films on polyimide substrates

International Nuclear Information System (INIS)

Liang, T.X.; Liu, Y.Q.; Fu, Z.Q.; Luo, T.Y.; Zhang, K.Y.

2005-01-01

Copper thin films were prepared on polyimide (PI) substrates by physical vapor deposition (PVD) and chemical vapor deposition (CVD). Titanium nitride (TiN) diffusion barrier layers were deposited between the copper films and the PI substrates by PVD. Auger electron spectroscopy compositional depth profile showed that TiN barrier layer was very effective in preventing copper diffusion into PI substrate even after the Cu/TiN/PI samples were annealed at 300 deg. C for 5 h. For the as-deposited CVD-Cu/PI, CVD-Cu/TiN/PI, and as-deposited PVD-Cu/PI samples, the residual stress in Cu films was very small. Relatively larger residual stress existed in Cu films for PVD-Cu/TiN/PI samples. For PVD-Cu/TiN/PI samples, annealing can increase the peeling strength to the level observed without a diffusion barrier. The adhesion improvement of Cu films by annealing treatment can be attributed to lowering of the residual tensile stress in Cu films

CuGaS2 and CuGaS2–ZnS Porous Layers from Solution-Processed Nanocrystals

Directory of Open Access Journals (Sweden)

Taisiia Berestok

2018-04-01

Full Text Available The manufacturing of semiconducting films using solution-based approaches is considered a low cost alternative to vacuum-based thin film deposition strategies. An additional advantage of solution processing methods is the possibility to control the layer nano/microstructure. Here, we detail the production of mesoporous CuGaS2 (CGS and ZnS layers from spin-coating and subsequent cross-linking through chalcogen-chalcogen bonds of properly functionalized nanocrystals (NCs. We further produce NC-based porous CGS/ZnS bilayers and NC-based CGS–ZnS composite layers using the same strategy. Photoelectrochemical measurements are used to demonstrate the efficacy of porous layers, and particularly the CGS/ZnS bilayers, for improved current densities and photoresponses relative to denser films deposited from as-produced NCs.

Investigation of physical properties and surface morphology of Cu nanolayer deposited on glass and (Al, Fe) thin films by DC magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Eslami, P.A. [Islamic Azad Univ., North Tehran (Iran, Islamic Republic of). Dept. of Chemistry; Islamic Azad Univ., Tabriz (Iran, Islamic Republic of). Dept. of Science-Applied Chemistry; Laheghi, S.N.; Ghoranneviss, M. [Islamic Azad Univ., Tehran (Iran, Islamic Republic of). Plasma Research Center; Moradi, S. [Islamic Azad Univ., Tehran (Iran, Islamic Republic of). Dept. of Chemistry; Aberumand, P. [Islamic Azad Univ., Tehran (Iran, Islamic Republic of). Science and Research Laboratory Complex

2008-07-01

The applications for copper (Cu) thin films with micro or nanostructural dimensions range from catalysis to microelectronic devices. This paper reported on a study in which DC magnetron sputtering was used to coat iron (Fe), copper (Cu) and aluminum (Al) on glass substrate under a particular voltage, time and optimized deposition pressure. The samples were then coated with Cu using the same technique in preparation of different multilayers. Physical properties such as transmission and reflection per cent, magnetic and electrical properties, size and surface morphology were analyzed using data from AFM, XRD, SEM, Four point probe, and magneto resistive spectrophotometers. The study showed that the size, surface morphology and some physical properties of Cu nanolayer depend on substrate materials, surface morphology and physical properties below the nanolayer. Future work will focus on chemical properties such as catalytic and electrochemical properties. Copper nanoparticles will also be synthesized on other materials such as ZnO. 14 refs., 1 tab., 3 figs.

A first-principles study of the structural, mechanical and electronic properties of precipitates of Al2Cu in Al-Cu alloys.

Science.gov (United States)

Ouyang, Y F; Chen, H M; Tao, X M; Gao, F; Peng, Q; Du, Y

2018-01-03

The properties of precipitates are important in understanding the strengthening mechanism via precipitation during heat treatment and the aging process in Al-Cu based alloys, where the formation of precipitates is sensitive to temperature and pressure. Here we report a first-principles investigation of the effect of temperature and pressure on the structural stability, elastic constants and formation free energy for precipitates of Al 2 Cu, as well as their mechanical properties. Based on the formation enthalpy of Guinier-Preston (GP(I)) zones, the size of the GP(I) zone is predicted to be about 1.4 nm in diameter, which is in good agreement with experimental observations. The formation enthalpies of the precipitates are all negative, suggesting that they are all thermodynamically stable. The present calculations reveal that entropy plays an important role in stabilizing θ-Al 2 Cu compared with θ C '-Al 2 Cu. The formation free energies of θ''-Al 3 Cu, θ C '-Al 2 Cu, θ D '-Al 5 Cu 3 and θ t '-Al 11 Cu 7 increase with temperature, while those of θ'-Al 2 Cu, θ O '-Al 2 Cu and θ-Al 2 Cu decrease. The same trend is observed with the effect of pressure. The calculated elastic constants for the considered precipitation phases indicate that they are all mechanically stable and anisotropic, except θ C '-Al 2 Cu. θ D '-Al 5 Cu 3 has the highest Vicker's hardness. The electronic structures are also calculated to gain insight into the bonding characteristics. The present results can help in understanding the formation of precipitates by different treatment processes.

Ni-free Zr-Cu-Al-Nb-Pd bulk metallic glasses with different Zr/Cu ratios for biomedical applications.

Science.gov (United States)

Huang, Lu; Yokoyama, Yoshihiko; Wu, Wei; Liaw, Peter K; Pang, Shujie; Inoue, Akihisa; Zhang, Tao; He, Wei

2012-08-01

Zr-based bulk metallic glasses (BMGs) possess attractive properties for prospective biomedical applications. The present study designs Ni-free Zr-Cu-Al-Nb-Pd BMGs and investigates their in vitro biocompatibility by studying mechanical properties, bio-corrosion resistance, and cellular responses. The Ti-6Al-4V alloy is used as a reference material. It is found that the Zr-based BMGs exhibit good mechanical properties, including high strengths above 1600 MPa, high hardness over 4700 MPa, and low elastic moduli of 85-90 GPa. The Zr-based BMGs are corrosion resistant in a simulated body environment, as revealed by wide passive regions, low passive current densities, and high pitting overpotentials. The formation of ZrO(2)-rich surface passive films of the Zr-based BMGs contributes to their high corrosion resistance, whereas their pitting corrosion in the phosphate buffered saline solution can be attributed to the sensitivity of the ZrO(2) films to the chloride ion. The general biosafety of the Zr-based BMGs is revealed by normal cell adhesions and cell morphologies. Moreover, the Zr/Cu content ratio in the alloy composition affects the biocompatibility of the Zr-based BMGs, by increasing their corrosion resistance and surface wettability with the increase of the Zr/Cu ratio. Effects of Zr/Cu ratios can be used to guide the future design of biocompatible Zr-based BMGs. Copyright © 2012 Wiley Periodicals, Inc.

Study On Nanohardness Of Phases Occurring In ZnAl22Cu3 And ZnAl40Cu3 Alloys

Directory of Open Access Journals (Sweden)

Michalik R.

2015-06-01

Full Text Available Zn-Al alloys are mainly used due to their high tribological and damping properties. A very important issue is determination of the hardness of the phases present in the Zn-Al-Cu alloys. Unfortunately, in literature there is lack of studies on the hardness of the phases present in the alloys Zn-Al-Cu. The aim of this research was to determine the hardness of the phases present in the ZnAl22Cu3Si and ZnAl40Cu3Si alloys. The scope of the research included examination of the structure, chemical composition of selected micro-regions and hardness of phases present in the examined alloys. The research carried out has shown, that CuZn4 phase is characterized by a similar hardness as the hardness of the interdendritic areas. The phases present in the structure of ZnAl40Cu3 and ZnAl22Cu3 alloys after soaking at the temperature of 185 °C are characterized by lower hardness than the phase present in the structure of the as-cast alloys.

Active Bilayer PE/PCL Films for Food Packaging Modified with Zinc Oxide and Casein

Directory of Open Access Journals (Sweden)

Ana Rešček

2015-12-01

Full Text Available This paper studies the properties of active polymer food packaging bilayer polyethylene/polycaprolactone (PE/PCL films. Such packaging material consists of primary PE layer coated with thin film of PCL coating modified with active component (zinc oxide or zinc oxide/casein complex with intention to extend the shelf life of food and to maintain the quality and health safety. The influence of additives as active components on barrier, mechanical, thermal and antimicrobial properties of such materials was studied. The results show that, in comparison to the neat PE and PE/PCL films, some of PE/PCL bilayer films with additives exhibit improved barrier properties i.e. decreased water vapour permeability. Higher thermal stability of modified PE/PCL material is obtained due to a modified mechanism of thermal degradation. The samples with the additive nanoparticles homogeneously dispersed in the polymer matrix showed good mechanical properties. Addition of higher ZnO content contributes to the enhanced antibacterial activity of a material.

Brillouin light scattering study of spin waves in NiFe/Co exchange spring bilayer films

Energy Technology Data Exchange (ETDEWEB)

Haldar, Arabinda; Banerjee, Chandrima; Laha, Pinaki; Barman, Anjan, E-mail: abarman@bose.res.in [Thematic Unit of Excellence on Nanodevice Technology, Department of Condensed Matter Physics and Material Sciences, S. N. Bose National Centre for Basic Sciences, Kolkata 700098 (India)

2014-04-07

Spin waves are investigated in Permalloy(Ni{sub 80}Fe{sub 20})/Cobalt(Co) exchange spring bilayer thin films using Brillouin light scattering (BLS) experiment. The magnetic hysteresis loops measured by magneto-optical Kerr effect show a monotonic decrease in coercivity of the bilayer films with increasing Py thickness. BLS study shows two distinct modes, which are modelled as Damon-Eshbach and perpendicular standing wave modes. Linewidths of the frequency peaks are found to increase significantly with decreasing Py layer thickness. Interfacial roughness causes to fluctuate exchange coupling at the nanoscale regimes and the effect is stronger for thinner Py films. A quantitative analysis of the magnon linewidths shows the presence of strong local exchange coupling field which is much larger compared to macroscopic exchange field.

Bioplasmonic Alloyed Nanoislands Using Dewetting of Bilayer Thin Films.

Science.gov (United States)

Kang, Minhee; Ahn, Myeong-Su; Lee, Youngseop; Jeong, Ki-Hun

2017-10-25

Unlike monometallic materials, bimetallic plasmonic materials offer extensive benefits such as broadband tuning capability or high environmental stability. Here we report a broad range tuning of plasmon resonance of alloyed nanoislands by using solid-state dewetting of gold and silver bilayer thin films. Thermal dewetting after successive thermal evaporation of thin metal double-layer films readily forms AuAg-alloyed nanoislands with a precise composition ratio. The complete miscibility of alloyed nanoislands results in programmable tuning of plasmon resonance wavelength in a broadband visible range. Such extraordinary tuning capability opens up a new direction for plasmonic enhancement in biophotonic applications such as surface-enhanced Raman scattering or plasmon-enhanced fluorescence.

Facile synthesis of dendritic Cu by electroless reaction of Cu-Al alloys in multiphase solution

Energy Technology Data Exchange (ETDEWEB)

Wang, Ying; Liang, Shuhua, E-mail: liangxaut@gmail.com; Yang, Qing; Wang, Xianhui

2016-11-30

Highlights: • Nano- or micro-scale fractal dendritic copper (FDC) was synthesized by electroless immersing of Cu-Al alloys in CuCl{sub 2} + HCl. • FDC size increases with the increase of Al content in Cu-Al alloys immersed in CuCl{sub 2} + HCl solution. • Nanoscale Cu{sub 2}O was found at the edge of FDC. Nanoporous copper (NPC) can also be obtained by using Cu{sub 17}Al{sub 83} alloy. • The potential difference between CuAl{sub 2} and α-Al phase and the replacement reaction in multiphase solution are key factors. - Abstract: Two-dimensional nano- or micro-scale fractal dendritic coppers (FDCs) were synthesized by electroless immersing of Cu-Al alloys in hydrochloric acid solution containing copper chloride without any assistance of template or surfactant. The FDC size increases with the increase of Al content in Cu-Al alloys immersed in CuCl{sub 2} + HCl solution. Compared to Cu{sub 40}Al{sub 60} and Cu{sub 45}Al{sub 55} alloys, the FDC shows hierarchical distribution and homogeneous structures using Cu{sub 17}Al{sub 83} alloy as the starting alloy. The growth direction of the FDC is <110>, and all angles between the trunks and branches are 60°. Nanoscale Cu{sub 2}O was found at the edge of FDC. Interestingly, nanoporous copper (NPC) can also be obtained through Cu{sub 17}Al{sub 83} alloy. Studies showed that the formation of FDC depended on two key factors: the potential difference between CuAl{sub 2} intermetallic and α-Al phase of dual-phase Cu-Al alloys; a replacement reaction that usually occurs in multiphase solution. The electrochemical experiment further proved that the multi-branch dendritic structure is very beneficial to the proton transfer in the process of catalyzing methanol.

Magnetron sputtered Cu{sub 3}N/NiTiCu shape memory thin film heterostructures for MEMS applications

Energy Technology Data Exchange (ETDEWEB)

Kaur, Navjot; Choudhary, Nitin [Indian Institute of Technology Roorkee, Roorkee, Functional Nanomaterials Research Lab, Department of Physics and Centre of Nanotechnology (India); Goyal, Rajendra N. [Indian Institute of Technology, Roorkee, Department of Chemistry (India); Viladkar, S. [Indian Institute of Technology Roorkee, Roorkee, Functional Nanomaterials Research Lab, Department of Physics and Centre of Nanotechnology (India); Matai, I.; Gopinath, P. [Indian Institute of Technology, Roorkee, Centre for Nanotechnology (India); Chockalingam, S. [Indian Institute of Technology, Guwahati, Department of Biotechnology (India); Kaur, Davinder, E-mail: dkaurfph@iitr.ernet.in [Indian Institute of Technology Roorkee, Roorkee, Functional Nanomaterials Research Lab, Department of Physics and Centre of Nanotechnology (India)

2013-03-15

In the present study, for the first time, Cu{sub 3}N/NiTiCu/Si heterostructures were successfully grown using magnetron sputtering technique. Nanocrystalline copper nitride (Cu{sub 3}N with thickness {approx}200 nm) thin films and copper nanodots were subsequently deposited on the surface of 2-{mu}m-thick NiTiCu shape memory thin films in order to improve the surface corrosion and nickel release properties of NiTiCu thin films. Interestingly, the phase transformation from martensite phase to austenite phase has been observed in Cu{sub 3}N/NiTiCu heterostructures with corresponding change in texture and surface morphology of top Cu{sub 3}N films. Field emission scanning electron microscopy and atomic force microscope images of the heterostructures reveals the formation of 20-nm-sized copper nanodots on NiTiCu surface at higher deposition temperature (450 Degree-Sign C) of Cu{sub 3}N. Cu{sub 3}N passivated NiTiCu films possess low corrosion current density with higher corrosion potential and, therefore, better corrosion resistance as compared to pure NiTiCu films. The concentration of Ni released from the Cu{sub 3}N/NiTiCu samples was observed to be much less than that of pure NiTiCu film. It can be reduced to the factor of about one-ninth after the surface passivation resulting in smooth, homogeneous and highly corrosion resistant surface. The antibacterial and cytotoxicity of pure and Cu{sub 3}N coated NiTiCu thin films were investigated through green fluorescent protein expressing E. coli bacteria and human embryonic kidney cells. The results show the strong antibacterial property and non cytotoxicity of Cu{sub 3}N/NiTiCu heterostructure. This work is of immense technological importance due to variety of BioMEMS applications.

Solid-state dewetting of Au-Ni bi-layer films mediated through individual layer thickness and stacking sequence

Science.gov (United States)

Herz, Andreas; Theska, Felix; Rossberg, Diana; Kups, Thomas; Wang, Dong; Schaaf, Peter

2018-06-01

In the present work, the solid-state dewetting of Au-Ni bi-layer thin films deposited on SiO2/Si is systematically studied with respect to individual layer thickness and stacking sequence. For this purpose, a rapid heat treatment at medium temperatures is applied in order to examine void formation at the early stages of the dewetting. Compositional variations are realized by changing the thickness ratio of the bi-layer films, while the total thickness is maintained at 20 nm throughout the study. In the event of Au/Ni films annealed at 500 °C, crystal voids exposing the substrate are missing regardless of chemical composition. In reverse order, the number of voids per unit area in two-phase Au-Ni thin films is found to be governed by the amount of Au-rich material. At higher temperatures up to 650 °C, a decreased probability of nucleation comes at the expense of a major portion of cavities, resulting in the formation of bubbles in 15 nm Ni/5 nm Au bi-layers. Film buckling predominantly occurred at phase boundaries crossing the bubbles.

Infrared refractive index of thin YBa2Cu3O7 superconducting films

International Nuclear Information System (INIS)

Zhang, Z.M.; Choi, B.I.; Le, T.A.; Flik, M.I.; Siegal, M.P.; Phillips, J.M.

1992-01-01

This work investigates whether thin-film optics with a constant refractive index can be applied to high-T c superconducting thin films. The reflectance and transmittance of YBa 2 Cu 3 O 7 films on LaAlO 3 substrates are measured using a Fourier-transform infrared spectrometer at wavelengths from 1 to 100 μm at room temperature. The reflectance of these superconducting films at 10K in the wavelength region from 2.5 to 25 μm is measured using a cryogenic reflectance accessory. The film thickness varies from 10 to 200 nm. By modeling the frequency-dependent complex conductivity in the normal and superconducting states and applying electromagnetic-wave theory, the complex refractive index of YBa 2 Cu 3 O 7 films is obtained with a fitting technique. It is found that a thickness-independent refractive index can be applied even to a 25nm film, and average values of the spectral refractive index for film thicknesses between 25 and 200 nm are recommended for engineering applications

Effect of Cu Content on TiN-Cu Nanocomposite Film Properties: Structural and Hardness Studies

Directory of Open Access Journals (Sweden)

M. M. Larijani

2013-06-01

Full Text Available Titanium nitride-Copper (TiN-Cu nanocomposite films were deposited onto stainless steel substrate using hollow cathode discharge ion plating technique. The influence of Cu content in the range of 2-7 at.% on the microstructure, morphology and mechanical properties of deposited films were investigated. Structural properties of the films were studied by X-ray diffraction pattern. Topography of the deposited films was studied using atomic force microscopy. Film hardness was estimated by a triboscope nanoindentation system. However, X-ray photoelectron spectroscopy analysis was performed to study the surface chemical bonding states. It was found that addition of soft Cu phase above 2 at.% to TiN film drastically decreased the film hardness from 30 to 2.8 Gpa due to lubricant effect of segregated copper particles. X-ray photoelectron spectroscopy results showed that Cu and TiN phases grew separately. In our case,the formation of a solid solution or chemical bonding between Cu and Ti was rejected.

Comparative study of Ta, TaN and Ta/TaN bi-layer barriers for Cu-ultra low-k porous polymer integration

International Nuclear Information System (INIS)

Yang, L.Y.; Zhang, D.H.; Li, C.Y.; Foo, P.D.

2004-01-01

Tantalum (Ta), TaN and bilayer Ta/TaN barriers deposited on ultra-low-k porous polymer (ULKPP) and the thermal stability of their structures are comparatively investigated using various techniques. The Ta/ultra-low-k polymer shows the smallest sheet resistance, but the poorest thermal stability, while TaN on the ultra-low-k polymer shows the highest resistance but the best thermal stability. The bi-layer Ta/TaN barrier takes the advantage of both Ta and TaN barriers and gives reasonable resistance and thermal stability. The electrical tests indicate that the Cu lines with the TaN and bi-layer Ta/TaN barriers exhibit the smaller leakage current and higher breakdown voltage compared with the Cu lines with the Ta barrier. The better thermal stability of the TaN and the bi-layer Ta/TaN barriers is mainly due to the amorphous/nanostructure and less grain boundaries of the barriers. In addition, the texture discontinuity at the Ta/TaN interfaces in the bi-layers barrier also plays an important role in reducing mutual diffusion of Ta atoms in the Ta barrier and some atoms in the ultra-low-k porous polymer

Amorphous Cu-Ag films with high stability

International Nuclear Information System (INIS)

Reda, I.M.; Hafner, J.; Pongratz, P.; Wagendristel, A.; Bangert, H.; Bhat, P.K.

1982-06-01

Films produced by quenching Cu-Ag vapour onto cooled substrates at liquid nitrogen temperature have been investigated using electron microscopy, electron diffraction and electrical resistivity measurements. In the composition range from 30 to 70 at% Cu the as quenched films are amorphous, and within the range of 35 to 63 at% Cu the amorphous phase is stable above room temperature with a maximum crystallization temperature Tsub(c)=381 K at 47.5 at% Cu. Crystallization results in the formation of a supersaturated fcc solid solution which decomposes in a second crystallization step. The effect of deposition rate, film thickness, temperature and surface of the substrate, and most importantly of the composition on the transition temperatures has been investigated. A comparative study of the formation of amorphous phases in a wide variety of Cu-based alloys is presented. (author)

Time-dependent protection of ground and polished Cu using graphene film

International Nuclear Information System (INIS)

Dong, Yuhua; Liu, Qingqing; Zhou, Qiong

2015-01-01

Highlights: • Graphene was deposited on polished and ground Cu sheets by CVD. • Graphene films provide better protection to polished Cu for short time. • Multilayer graphene films provide better protection for short time. - Abstract: Graphene was deposited on Cu sheets with different morphologies by chemical vapor deposition. Scanning electron microscopy (SEM) analysis indicated that the morphology of the Cu sheet affected the graphene film properties. Electrochemical impedance spectroscopy measurements showed that the graphene film did not effectively protect Cu against corrosion because of prolonged exposure to ionic environments (3.5 wt.% NaCl solution). For short durations, graphene films provided better protection to polished Cu than ground Cu. Prolonged electrolyte immersion of graphene-coated Cu samples showed that the graphene film from the polished Cu surface was detached more easily than that from ground Cu

27Al, 63Cu NMR spectroscopy and electrical transport in Heusler Cu-Mn-Al alloy powders

Science.gov (United States)

Nadutov, V. M.; Perekos, A. O.; Kokorin, V. V.; Trachevskii, V. V.; Konoplyuk, S. M.; Vashchuk, D. L.

2018-02-01

The ultrafine powder of the Heusler Cu-13,1Mn-12,6Al (wt.%) alloy produced by electrical spark dispersion (ESD) in ethanol and the pellets prepared by pressing of the powders and aged in various gas environment (air, Ar, vacuum) were studied by XRD, nuclear magnetic resonance, magnetic and electric transport methods. The constituent phases were identified as b.c.c. α-Cu-Mn-Al, f.c.c. γ-Cu-Mn-Al, Cu2MnAl, and oxides. The sizes of the coherently scattering domains (CSD) and the saturation magnetizations were in the range of 4-90 nm and 0-1.5 Am2/kg, respectively. 27Al and 63Cu NMR spectra of the powders and pellets have shown hyperfine structure caused by contributions from atomic nuclei of the constituent phases. The aging of pellets in different gas environments had effect on their phase composition but no effect on dispersion of the phases. In contrast to the as-cast alloy, electrical resistance of the pellets evidenced semiconducting behavior at elevated temperatures due to the presence of metal oxides formed on the surfaces of nanoparticles.

CuGaTe2-CuAlTe2 system

International Nuclear Information System (INIS)

Bodnar', I.V.

2003-01-01

The results of studies on the chemical interaction in the CuGaTe 2 -CuAlTe 2 as well as on the thermal and optical properties of the formed solid solutions are presented. It is shown, that continuous number of solid solutions are formed in the CuGaTe 2 -CuAlTe 2 system, which crystallize in the chalcopyrite structure. The diagram of state of this system is plotted. The thermal expansion of these materials is studied through the dilatometric method. The linear dependence of the thermal expansion coefficient on the composition is established. The concentration dependences of the forbidden zone width diverge from the linearity [ru

Impact of AlO x layer on resistive switching characteristics and device-to-device uniformity of bilayered HfO x -based resistive random access memory devices

Science.gov (United States)

Chuang, Kai-Chi; Chung, Hao-Tung; Chu, Chi-Yan; Luo, Jun-Dao; Li, Wei-Shuo; Li, Yi-Shao; Cheng, Huang-Chung

2018-06-01

An AlO x layer was deposited on HfO x , and bilayered dielectric films were found to confine the formation locations of conductive filaments (CFs) during the forming process and then improve device-to-device uniformity. In addition, the Ti interposing layer was also adopted to facilitate the formation of oxygen vacancies. As a result, the resistive random access memory (RRAM) device with TiN/Ti/AlO x (1 nm)/HfO x (6 nm)/TiN stack layers demonstrated excellent device-to-device uniformity although it achieved slightly larger resistive switching characteristics, which were forming voltage (V Forming) of 2.08 V, set voltage (V Set) of 1.96 V, and reset voltage (V Reset) of ‑1.02 V, than the device with TiN/Ti/HfO x (6 nm)/TiN stack layers. However, the device with a thicker 2-nm-thick AlO x layer showed worse uniformity than the 1-nm-thick one. It was attributed to the increased oxygen atomic percentage in the bilayered dielectric films of the 2-nm-thick one. The difference in oxygen content showed that there would be less oxygen vacancies to form CFs. Therefore, the random growth of CFs would become severe and the device-to-device uniformity would degrade.

Hydrodeoxygenation of furfuryl alcohol over Cu/MgAl and Cu/ZnAl catalysts derived from hydrotalcite-like precursors

Directory of Open Access Journals (Sweden)

Natalia Andrea Pino

2017-01-01

Full Text Available The aqueous phase hydrodeoxygenation (HDO of furfuryl alcohol over Cu/MgAl and Cu/ZnAl catalysts with different Mg/Al and Zn/Al molar ratios, were investigated. Mg-Al and Zn-Al mixed oxides derived from hydrotalcites precursors were used as supports, which were impregnated with an aqueous solution of copper nitrate by incipient wetness impregnation. The HDO reaction was carried out in a typical batch reactor at 5 MPa of H2 and 200 °C for 4 h. Among the catalysts studied, the Cu/MgAl-0.5 catalyst exhibited the higher furfuryl alcohol conversion (86% and yield of cyclopentanol (35%, which is the reaction product with the highest hydrogen-carbon (H/C ratio. With the Cu/MgAl-3 catalyst a high cyclopentanone yield (67% was achieved. The results obtained, showed that copper supported on mixed oxides catalysts derived from hydrotalcite precursors are a promising alternative to improve the bio-oil quality.

Zr-(Cu,Ag)-Al bulk metallic glasses

International Nuclear Information System (INIS)

Jiang, Q.K.; Wang, X.D.; Nie, X.P.; Zhang, G.Q.; Ma, H.; Fecht, H.-J.; Bendnarcik, J.; Franz, H.; Liu, Y.G.; Cao, Q.P.; Jiang, J.Z.

2008-01-01

In this paper, we report the formation of a series Zr-(Cu,Ag)-Al bulk metallic glasses (BMGs) with diameters at least 20 mm and demonstrate the formation of about 25 g amorphous metallic ingots in a wide Zr-(Cu,Ag)-Al composition range using a conventional arc-melting machine. The origin of high glass-forming ability (GFA) of the Zr-(Cu,Ag)-Al alloy system has been investigated from the structural, thermodynamic and kinetic points of view. The high GFA of the Zr-(Cu,Ag)-Al system is attributed to denser local atomic packing and the smaller difference in Gibbs free energy between amorphous and crystalline phases. The thermal, mechanical and corrosion properties, as well as elastic constants for the newly developed Zr-(Cu,Ag)-Al BMGs, are also presented. These newly developed Ni-free Zr-(Cu,Ag)-Al BMGs exhibit excellent combined properties: strong GFA, high strength, high compressive plasticity, cheap and non-toxic raw materials and biocompatible property, as compared with other BMGs, leading to their potential industrial applications

CuPc/C60 heterojunction thin film optoelectronic devices

International Nuclear Information System (INIS)

Murtaza, Imran; Karimov, Khasan S.; Qazi, Ibrahim

2010-01-01

The optoelectronic properties of heterojunction thin film devices with ITO/CuPc/C 60 /Al structure have been investigated by analyzing their current-voltage characteristics, optical absorption and photocurrent. In this organic photovoltaic device, CuPc acts as an optically active layer, C 60 as an electron-transporting layer and ITO and Al as electrodes. It is observed that, under illumination, excitons are formed, which subsequently drift towards the interface with C 60 , where an internal electric field is present. The excitons that reach the interface are subsequently dissociated into free charge carriers due to the electric field present at the interface. The experimental results show that in this device the total current density is a function of injected carriers at the electrode-organic semiconductor surface, the leakage current through the organic layer and collected photogenerated current that results from the effective dissociation of excitons. (semiconductor devices)

Cross-sectional characterization of the dewetting of a Au/Ni bilayer film

Energy Technology Data Exchange (ETDEWEB)

Cen, Xi; Thron, Andrew M.; Zhang, Xinming; Benthem, Klaus van

2017-07-15

The solid state dewetting of Au/Ni bilayer films was investigated by cross-sectional transmission electron microscopy techniques, including energy-dispersive X-ray spectroscopy, electron energy-loss spectroscopy and precession electron diffraction. After annealing under high vacuum conditions the early stage of film agglomeration revealed significant changes in film morphology and chemical distribution. Both Au and Ni showed texturing. Despite the initial deposition sequence of the as-deposited Au/Ni/SiO{sub 2}/Si interface structure, the majority of the metal/SiO{sub 2} interface was Au/SiO{sub 2} after annealing at 675 °C for 1 h. Void nucleation was predominantly observed at Au/Ni/SiO{sub 2} triple junctions, rather than grain boundary grooving at free surface of the metal film. Detailed cross-sectional characterization reveals that the Au/Ni interface in addition to small amounts of metal alloying strongly affects film break-up and agglomeration kinetics. The formation of Au/SiO{sub 2} interface sections is found to be energetically preferred over Ni/SiO{sub 2} due to compressive stress in the as-deposited Ni layer. Void nucleation is observed at the film/substrate interface, while the formation of voids at Ni/Au phase boundaries inside the metal film is caused by the Kirkendall effect. - Highlights: • The dewetting of Au/Ni bilayer films was studied by cross-sectional TEM techniques. • The majority of the metal/SiO{sub 2} interface was comprised of Au/SiO{sub 2} after annealing. • Void formation was dominant for hole nucleation at early dewetting stage. • The Kirkendall effect was also observed to cause the formation of voids.

Ultrathin Cr added Ru film as a seedless Cu diffusion barrier for advanced Cu interconnects

Science.gov (United States)

Hsu, Kuo-Chung; Perng, Dung-Ching; Yeh, Jia-Bin; Wang, Yi-Chun

2012-07-01

A 5 nm thick Cr added Ru film has been extensively investigated as a seedless Cu diffusion barrier. High-resolution transmission electron microscopy micrograph, X-ray diffraction (XRD) pattern and Fourier transform-electron diffraction pattern reveal that a Cr contained Ru (RuCr) film has a glassy microstructure and is an amorphous-like film. XRD patterns and sheet resistance data show that the RuCr film is stable up to 650 °C, which is approximately a 200 °C improvement in thermal stability as compared to that of the pure Ru film. X-ray photoelectron spectroscopy depth profiles show that the RuCr film can successfully block Cu diffusion, even after a 30-min 650 °C annealing. The leakage current of the Cu/5 nm RuCr/porous SiOCH/Si stacked structure is about two orders of magnitude lower than that of a pristine Ru sample for electric field below 1 MV/cm. The RuCr film can be a promising Cu diffusion barrier for advanced Cu metallization.

Magnetoresistance and magnetostriction of Ni81Fe19 and Co90Fe10 mono- and bilayer films

International Nuclear Information System (INIS)

Sahingoz, R.; Hollingworth, M.P.; Gibbs, M.R.J.; Murdoch, S.J.

2005-01-01

Monolayer and bilayer films of Ni 81 Fe 19 , Co 90 Fe 10 , Co 90 Fe 10 /Ni 81 Fe 19 , and Ni 81 Fe 19 /Co 90 Fe 10 have been grown on thermally oxidized Si. The magnetoresistance (MR) of the samples was measured as a function of applied DC magnetic field, using a four-point probe method. The magnetostriction constant, λ s , was derived from the change of anisotropy field as a function of strain. The dependence of the MR on different combinations of film layers was investigated. The magnetoresistance of the bilayers changed dramatically upon reversal of the layer order. The mono- and bilayer samples with the same material on top of the substrate showed similar MR loop shapes. However, the saturation fields of the bilayers were larger than those for the monolayers. The magnetostriction of all samples was negative. We discuss the consequences for the study and optimization of spin-valve devices

RF and microwave noise suppression in a transmission line using Fe-Si-Al/Ni-Zn magnetic composite films

International Nuclear Information System (INIS)

Lee, J. W.; Hong, Y. K.; Kim, K.; Joo, J.; Yoon, Y. W.; Kim, S. W.; Kim, Y. B.; Kim, K. Y.

2006-01-01

Radio-frequency (RF) and microwave noise suppression by using magnetic composite films on a microstrip line (MSL) was studied in the frequency range from 50 MHz to 13.5 GHz. The MSL was composed of a Cu transmission line, dielectric materials, and a Cu substrate. The Fe-Si-Al/Ni-Zn magnetic composite films were placed on the MSL, and the reflection and the transmission characteristics were investigated. We observed that RF and microwave noise suppression caused by the Fe-Si-Al/Ni-Zn magnetic composite films varied with the concentration ratio of the sendust (Fe-Si-Al) and the Ni-Zn ferrite. The frequency dependence of the power loss due to the composite films on the MSL was measured and the power loss increased at higher frequencies with increasing concentration of the sendust in the composites. The electromagnetic interference shielding efficiencies of the magnetic composite films in the far-field region are also discussed.

Electrodeposition and Thermoelectric Properties of Cu-Se Binary Compound Films

Science.gov (United States)

Yang, Mengqian; Shen, Zhengwu; Liu, Xiaoqing; Wang, Wei

2016-03-01

Cu-Se binary compound films have been prepared by electrodeposition from solutions containing CuSO4, H2SeO3, and H2SO4 and their composition, structure, and thermoelectric performance analyzed. Moving the depositing potential negatively increased the Cu content in the film, remarkably so for relatively low Cu2+ concentration in the solution. X-ray diffraction analysis showed that the phase composition of the films varied with their Cu content. Cu-Se binary compound films electrodeposited from solutions with different concentration ratios of CuSO4 to H2SeO3 showed two different phases: α-Cu2- x Se (monoclinic) with Se content in the range of 33.3 at.% to 33.8 at.%, and β-Cu2Se (cubic) with Se content in the range of 35.3 at.% to 36.0 at.%. The highest power factor for electrodeposited Cu2- x Se film was 0.13 mW/(K2 m) with Seebeck coefficient of 56.0 μV/K.

Processing of La(1.8)Sr(0.2)CuO4 and YBa2Cu3O7 superconducting thin films by dual-ion-beam sputtering

Science.gov (United States)

Madakson, P.; Cuomo, J. J.; Yee, D. S.; Roy, R. A.; Scilla, G.

1988-03-01

High-quality La(1.8)Sr(0.2)CuO4 and YBa2Cu3O7 superconducting thin films, with zero resistance at 88 K, have been made by dual-ion-beam sputtering of metal and oxide targets at elevated temperatures. The films are about 1.0 micron thick and are single phase after annealing. The substrates investigated are Nd-YAP, MgO, SrF2, Si, CaF2, ZrO2-(9 pct)Y2O3, BaF2, Al2O3, and SrTiO3. Characterization of the films was carried out using Rutherford backscattering spectroscopy, resistivity measurements, TEM, X-ray diffraction, and SIMS. Substrate/film interaction was observed in every case. This generally involves diffusion of the substrate into the film, which is accompanied by, for example, the replacement of Ba by Sr in the YBa2Cu2O7 structure, in the case of SrTiO3 substrate. The best substrates were those that did not significantly diffuse into the film and which did not react chemically with the film.

First-principle Calculations of Mechanical Properties of Al2Cu, Al2CuMg and MgZn2 Intermetallics in High Strength Aluminum Alloys

Directory of Open Access Journals (Sweden)

LIAO Fei

2016-12-01

Full Text Available Structural stabilities, mechanical properties and electronic structures of Al2Cu, Al2CuMg and MgZn2 intermetallics in Al-Zn-Mg-Cu aluminum alloys were determined from the first-principle calculations by VASP based on the density functional theory. The results show that the cohesive energy (Ecoh decreases in the order MgZn2 > Al2CuMg > Al2Cu, whereas the formation enthalpy (ΔH decreases in the order MgZn2 > Al2Cu > Al2CuMg. Al2Cu can act as a strengthening phase for its ductile and high Young's modulus. The Al2CuMg phase exhibits elastic anisotropy and may act as a crack initiation point. MgZn2 has good plasticity and low melting point, which is the main strengthening phase in the Al-Zn-Mg-Cu aluminum alloys. Metallic bonding mode coexists with a fractional ionic interaction in Al2Cu, Al2CuMg and MgZn2, and that improves the structural stability. In order to improve the alloys' performance further, the generation of MgZn2 phase should be promoted by increasing Zn content while Mg and Cu contents are decreased properly.

Facile synthesis of dendritic Cu by electroless reaction of Cu-Al alloys in multiphase solution

Science.gov (United States)

Wang, Ying; Liang, Shuhua; Yang, Qing; Wang, Xianhui

2016-11-01

Two-dimensional nano- or micro-scale fractal dendritic coppers (FDCs) were synthesized by electroless immersing of Cu-Al alloys in hydrochloric acid solution containing copper chloride without any assistance of template or surfactant. The FDC size increases with the increase of Al content in Cu-Al alloys immersed in CuCl2 + HCl solution. Compared to Cu40Al60 and Cu45Al55 alloys, the FDC shows hierarchical distribution and homogeneous structures using Cu17Al83 alloy as the starting alloy. The growth direction of the FDC is , and all angles between the trunks and branches are 60°. Nanoscale Cu2O was found at the edge of FDC. Interestingly, nanoporous copper (NPC) can also be obtained through Cu17Al83 alloy. Studies showed that the formation of FDC depended on two key factors: the potential difference between CuAl2 intermetallic and α-Al phase of dual-phase Cu-Al alloys; a replacement reaction that usually occurs in multiphase solution. The electrochemical experiment further proved that the multi-branch dendritic structure is very beneficial to the proton transfer in the process of catalyzing methanol.

Power losses in bilayer inverted small molecule organic solar cells

KAUST Repository

Trinh, Cong

2012-01-01

Inverted bilayer organic solar cells using copper phthalocyanine (CuPc) as a donor and C60 as an acceptor with the structure: glass/indium tin oxide (ITO)/ZnO/C60/CuPc/MoO3/Al, in which the zinc oxide (ZnO) was deposited by atomic layer deposition, are compared with a conventional device: glass/ITO/CuPc/C60/bathocuproine/Al. These inverted and conventional devices give short circuit currents of 3.7 and 4.8 mA/cm 2, respectively. However, the inverted device gives a reduced photoresponse from the CuPc donor compared to that of the conventional device. Optical field models show that the arrangement of organic layers in the inverted devices leads to lower absorption of long wavelengths by the CuPc donor; the low energy portion of the spectrum is concentrated near the metal oxide electrode in both devices. © 2012 American Institute of Physics.

Cu and Cu(Mn) films deposited layer-by-layer via surface-limited redox replacement and underpotential deposition

Energy Technology Data Exchange (ETDEWEB)

Fang, J.S., E-mail: jsfang@nfu.edu.tw [Department of Materials Science and Engineering, National Formosa University, Huwei 63201, Taiwan (China); Sun, S.L. [Department of Materials Science and Engineering, National Formosa University, Huwei 63201, Taiwan (China); Cheng, Y.L. [Department of Electrical Engineering, National Chi-Nan University, Nan-Tou 54561, Taiwan (China); Chen, G.S.; Chin, T.S. [Department of Materials Science and Engineering, Feng Chia University, Taichung 40724, Taiwan (China)

2016-02-28

Graphical abstract: - Abstract: The present paper reports Cu and Cu(Mn) films prepared layer-by-layer using an electrochemical atomic layer deposition (ECALD) method. The structure and properties of the films were investigated to elucidate their suitability as Cu interconnects for microelectronics. Previous studies have used primarily a vacuum-based atomic layer deposition to form a Cu metallized film. Herein, an entirely wet chemical process was used to fabricate a Cu film using the ECALD process by combining underpotential deposition (UPD) and surface-limited redox replacement (SLRR). The experimental results indicated that an inadequate UPD of Pb affected the subsequent SLRR of Cu and lead to the formation of PbSO{sub 4}. A mechanism is proposed to explain the results. Layer-by-layer deposition of Cu(Mn) films was successfully performed by alternating the deposition cycle-ratios of SLRR-Cu and UPD-Mn. The proposed self-limiting growth method offers a layer-by-layer wet chemistry-based deposition capability for fabricating Cu interconnects.

Phase equilibria and crystalline structure of compounds in the Lu-Al and Lu-Cu-Al systems

International Nuclear Information System (INIS)

Kuz'ma, Yu.B.; Stel'makhovich, B.M.; Galamushka, L.I.

1992-01-01

Phase equilibria and crystal structure of compounds in Lu-Al and Lu-Cu-Al systems were studied. Existence of Lu 2 Al compound having the structure of the PbCl 2 type is ascertained. Diagram of phase equilibria of Lu-Cu-Al system at 870 K is plotted. Compounds Lu 2 (Cu,Al) 17 (the Th 2 Zn 17 type structure), Lu(Cu,Al) 5 (CaCu 5 type structure), Lu 6 (Cu,Al) 23 (Th 6 Mn 23 type structure) and ∼ LuCuAl 2 have been prepared for the first time. Investigation of component interaction in Lu-Cu-Al system shows that the system is similar to previously studied systems Dy-Cu-Al and Er-Cu-Al. The main difference consists in the absence of LuCuAl 3 compound with rhombic structure of the CeNi 2+x Sb 2-x type in the system investigated

Phase relationships in the Al-rich region of the Al-Cu-Er system

International Nuclear Information System (INIS)

Zhang Ligang; Masset, Patrick J.; Cao Fuyong; Meng Fangui; Liu Libin; Jin Zhanpeng

2011-01-01

Research highlights: → One ternary phase τ 1 -Al 8 Cu 4 Er in Al-rich region with a composition of 59.4-60.4 at.% Al, 32.2-33.8 at.% Cu, and 6.4-7.7 at.% Er is observed in both as-cast and annealed alloys. At 673 K, the binary Al 3 Er phase dissolves about 3.51 at.% Cu. → The calculated solidification paths (based on the CALPHAD method) of as-cast alloys are in agreement with the experimental results. → It can be found that the resultant thermodynamic database can be applied to case studies of as-cast alloys, showing that the literature thermodynamic description of the Al-Cu-Er system is reliable as a working basis for computer-assisted alloy design. - Abstract: The Al-rich region of the ternary Al-Cu-Er system is investigated using the method of X-ray diffraction, scanning electron microscopy with energy dispersive X-ray spectroscopy. Phase equilibria in the Al-rich region of the Al-Cu-Er system at 673 K have been obtained, and the microstructures of as-cast alloys in the Al-rich region are also investigated. One ternary phase τ 1 -Al 8 Cu 4 Er with a composition of 59.4-60.4 at.% Al, 32.2-33.8 at.% Cu, and 6.4-7.7 at.% Er is observed in both as-cast and annealed alloys. At 673 K, the binary Al 3 Er phase dissolves about 3.51 at.% Cu. The calculated solidification paths (based on the CALPHAD method) of as-cast alloys are in agreement with the experimental results.

NMR and NQR study of the electronic and structural properties of Al-Cu-Fe and Al-Cu-Ru quasicrystals

International Nuclear Information System (INIS)

Shastri, A.; Borsa, F.; Torgeson, D.R.; Shield, J.E.; Goldman, A.I.

1994-01-01

27 Al and 63,65 Cu NMR is reported for powdered stable Al-Cu-Fe and Al-Cu-Ru icosahedral quasicrystals and crystalline approximants, and for an Al-Pd-Mn single-grain quasicrystal. 27 Al NQR spectra at 4.2 K were observed in Al-Cu-Fe and Al-Cu-Ru samples. From quadrupole-perturbed NMR spectra at different magnetic fields, and from zero-field NQR spectra, a wide distribution of local electric-field gradient (EFG) tensor components and principal-axis-system orientations was found at the Al site. A model EFG calculation based on a 1/1 Al-Cu-Fe approximant successfully explained the observed NQR spectra. The average local gradient is largely determined by the p-electron wave function at the Al site, while the width of the distribution is due to EFG lattice contribution. Comparison of 63 Cu and 27 Al NMR shows the EFG distribution at the two sites is similar, but the electronic contribution to the EFG is considerably smaller at the Cu site, in agreement with a more s-type wave function of the conduction electrons. Overall spread of EFG values is well reproduced by calculation based on the approximant. However, the experimental spectra indicate a much larger number of nonequivalent sites when compared with the simulated NQR spectra based on the 1/1 approximant. The short-range, local chemical order is well represented by the approximant, but differences in coordination must be included at intermediate range in the quasicrystal. Measured 27 Al Knight shift, magnetic susceptibility, and nuclear spin-lattice relaxation time as a function of temperature indicate reduced density of states at the Fermi level by a factor of 7 or 8 from the value in Al metal, consistent with the notion of a pseudogap for these quasicrystals. No differences in measured parameters were detected as a function of composition of the quasicrystalline alloys

CuInS{sub 2} thin films obtained through the annealing of chemically deposited In{sub 2}S{sub 3}-CuS thin films

Energy Technology Data Exchange (ETDEWEB)

Pena, Y., E-mail: yolapm@gmail.com [Facultad de Ciencias Quimicas, Universidad Autonoma de Nuevo Leon, Pedro de Alba S/N, Ciudad Universitaria, 66451, San Nicolas de los Garza, Nuevo Leon (Mexico); Lugo, S. [Facultad de Ciencias Quimicas, Universidad Autonoma de Nuevo Leon, Pedro de Alba S/N, Ciudad Universitaria, 66451, San Nicolas de los Garza, Nuevo Leon (Mexico); Calixto-Rodriguez, M. [Centro de Investigacion en Energia, Universidad Nacional Autonoma de Mexico, Privada Xochicalco S/N, Col Centro, 62580, Temixco, Morelos (Mexico); Vazquez, A.; Gomez, I.; Elizondo, P. [Facultad de Ciencias Quimicas, Universidad Autonoma de Nuevo Leon, Pedro de Alba S/N, Ciudad Universitaria, 66451, San Nicolas de los Garza, Nuevo Leon (Mexico)

2011-01-01

In this work, we report the formation of CuInS{sub 2} thin films on glass substrates by heating chemically deposited multilayers of copper sulfide (CuS) and indium sulfide (In{sub 2}S{sub 3}) at 300 and 350 deg. C in nitrogen atmosphere at 10 Torr. CIS thin films were prepared by varying the CuS layer thickness in the multilayers with indium sulfide. The XRD analysis showed that the crystallographic structure of the CuInS{sub 2} (JCPDS 27-0159) is present on the deposited films. From the optical analysis it was estimated the band gap value for the CIS film (1.49 eV). The electrical conductivity varies from 3 x 10{sup -8} to 3 {Omega}{sup -1} cm{sup -1} depending on the thickness of the CuS film. CIS films showed p-type conductivity.

Instantaneous preparation of CuInSe2 films from elemental In, Cu, Se particles precursor films in a non-vacuum process

International Nuclear Information System (INIS)

Kaigawa, R.; Uesugi, T.; Yoshida, T.; Merdes, S.; Klenk, R.

2009-01-01

CuInSe 2 (CIS) films are successfully prepared by means of non-vacuum, instantaneous, direct synthesis from elemental In, Cu, Se particles precursor films without prior synthesis of CIS nanoparticle precursors and without selenization with H 2 Se or Se vapor. Our precursor films were prepared on metal substrates by spraying the solvent with added elemental In, Cu, and Se particles. Precursor films were instantaneously sintered using a spot welding machine. When the electric power was fixed to 0.6 kVA, elemental In, Cu, or Se peaks were not observed and only peaks of CIS are observed by X-ray diffraction (XRD) on the film sintered for 7/8 s. We can observe XRD peaks indicative of the chalcopyrite-type structure, such as (101), (103) and (211) diffraction peaks. We conclude that the synthesized CIS crystals have chalcopyrite-type structure with high crystallinity

Research on fabrication technology for thin film solar cells for practical use. Technological development for qualitative improvement (CuInSe2 based PV cell); Usumaku taiyo denchi seizo gijutsu no jitsuyoka kenkyu. Kohinshitsuka gijutsu (CuInSe2 taiyo denchi seizo no gijutsu kaihatsu)

Energy Technology Data Exchange (ETDEWEB)

Tatsuta, M [New Energy and Industrial Technology Development Organization, Tokyo (Japan)

1994-12-01

This paper reports the study results on the fabrication technology of CuInSe2 based PV cell in fiscal 1994. (1) On formation of high-quality CIGS thin films by bilayer method, Mo film was deposited on a glass substrate by sputtering, and CIGS film with different Ga/In ratios was next formed on the substrate by quaternary simultaneous deposition at different In and Ga deposition speeds. In addition, CdS film was deposited on the CIGS film, and ZnO and ITO films were finally deposited on it by sputtering to complete solar cell. This solar cell offered the maximum conversion efficiency among cells using CIGS film. (2) On formation of high-quality CIGS thin films by three-stage method, a certain correlation was found between substrate temperature and CIGS film composition by monitoring substrate temperature in film forming process. This phenomenon allowed rigorous control of CIS film compositions important for CIS thin film solar cells. (3) On low-cost process technology for thin film formation, Cu(In,Ga)S2 solid solution film was fabricated by expanded selenic process. 3 figs.

Bilayered Oxide thin films for transparent electrode application

Science.gov (United States)

Dutta, Titas; Narayan, Jagdish

2008-10-01

Ga doped ZnO films with electrical and optical properties comparable to indium tin oxide (ITO) is a promising candidate for transparent conducting oxides (TCOs) because of its superior stability in hydrogen environment, benign nature and relatively inexpensive supply. However, ZnO based TCO films suffer from low work function, which is a critical parameter for device applications. We report here the growth of a novel bilayered structure consisting of very thin (few monolayers) ITO, MoOx layer on Zn0.95Ga0.05O film for transparent electrode applications by using pulsed laser deposition technique at different temperatures and oxygen partial pressure. The characteristics of the ITO film and the heterostructure have been investigated in detail using XRD, TEM, XPS, and electrical and optical property measurements. It is envisaged that the overall transmittance and the resistivity are dictated by the thicker layer of ZnGa0.05O beneath the ITO layer. Hence, this study is aimed to improve the surface characteristics without affecting the overall transmittance and sheet resistance. This will enhance the transport of the carriers across the heterojunction in the device, thus, resulting in the increase in device efficiency.

Preparation of biaxially oriented TlCu-1234 thin films

CERN Document Server

Khan, N A; Tateai, F; Kojima, T; Ishida, K; Terada, N; Ihara, H

1999-01-01

The single phase of TlCu-1234 superconductor thin films is prepared for the first time by the amorphous phase epitaxy (APE) method, which is thallium treatment of sputtered amorphous phase at 900 degrees C for 1 h. The amorphous $9 phase is prepared by sputtering from the stoichiometric target composition CuBa/sub 2/Ca/sub 3/Cu/sub 4/O/sub 12-y/. The films on the SrTiO/sub 3/ substrate are aligned biaxially after the thallium treatment. Highly reproducible $9 TlCu-1234 films are prepared by this method. The XRD reflected a predominant single phase with the c-axis lattice constant of 18.74 AA. This lattice constant value is in between that of Cu-1234 (17.99 AA) and Tl-1234 (19.11 AA) . The $9 pole figure measurements of (103) reflection of the films showed a-axis-oriented crystals with Delta phi =0.8 degrees . The composition of the films after energy dispersive X-ray (EDX) measurements is Tl/sub 0.8/Cu/sub 0.2/Ba/sub $9 2/Ca/sub 3/Cu/sub 4/O /sub 12-y/. From the resistivity measurements, the T/sub c/ is 113 K...

Native oxidation of ultra high purity Cu bulk and thin films

International Nuclear Information System (INIS)

Iijima, J.; Lim, J.-W.; Hong, S.-H.; Suzuki, S.; Mimura, K.; Isshiki, M.

2006-01-01

The effect of microstructure and purity on the native oxidation of Cu was studied by using angle-resolved X-ray photoelectron spectroscopy (AR-XPS) and spectroscopic ellipsometry (SE). A high quality copper film prepared by ion beam deposition under a substrate bias voltage of -50 V (IBD Cu film at V s = -50 V) showed an oxidation resistance as high as an ultra high purity copper (UHP Cu) bulk, whereas a Cu film deposited without substrate bias voltage (IBD Cu film at V s = 0 V) showed lower oxidation resistance. The growth of Cu 2 O layer on the UHP Cu bulk and both types of the films obeyed in principle a logarithmic rate law. However, the growth of oxide layer on the IBD Cu films at V s = 0 and -50 V deviated upward from the logarithmic rate law after the exposure time of 320 and 800 h, respectively. The deviation from the logarithmic law is due to the formation of CuO on the Cu 2 O layer after a critical time

LaNiO3 buffer layers for high critical current density YBa2Cu3O7-δ and Tl2Ba2CaCu2O8-δ films

International Nuclear Information System (INIS)

Carlson, C.M.; Parilla, P.A.; Siegal, M.P.; Ginley, D.S.; Wang, Y.; Blaugher, R.D.; Price, J.C.; Overmyer, D.L.; Venturini, E.L.

1999-01-01

We demonstrate high critical current density superconducting films of YBa 2 Cu 3 O 7-δ (YBCO) and Tl 2 Ba 2 CaCu 2 O 8-δ (Tl-2212) using LaNiO 3 (LNO) buffer layers. YBCO films grown on an LNO buffer layer have only a slightly lower J c (5 K, H=0) than films grown directly on a bare LaAlO 3 substrate. YBCO films grown on LNO buffer layers exhibit minor microstructural disorder and enhanced flux pinning. LNO-buffered Tl-2212 samples show large reductions in J c at all temperatures and fields compared to those grown on bare LaAlO 3 , correlating to both a-axis grain and nonsuperconducting phase formation. LNO could be a promising buffer layer for both YBCO and Tl-based superconducting films in coated conductor applications. copyright 1999 American Institute of Physics

LaNiO3 Buffer Layers for High Critical Current Density YBa2Cu3O7δ and Tl2Ba2CaCu2O8δ Films

International Nuclear Information System (INIS)

Carlson, C.M.; Parilla, P.A.; Siegal, M.P.; Ginley, D.S.; Wang, Y.-T.; Blaugher, R.D.; Price, J.C.; Overmyer, D.L.; Venturini, E.L.

1999-01-01

We demonstrate high critical current density superconducting films of YBa 2 Cu 3 O 7-δ (YBCO) and Tl 2 Ba 2 CaCu 2 O 8-δ (Tl-2212) using LaNiO 3 (LNO) buffer layers. YBCO films grown on an LNO buffer layer have only a slightly lower J c (5K, H=0) than films grown directly on a bare LaAlO 3 substrate. It is noteworthy that YBCO films grown on LNO buffer layers exhibit minor microstructural disorder and enhanced flux pinning. LNO-buffered Tl-2212 samples show large reductions in J c at all temperatures and fields compared to those grown on bare LaAlO 3 , correlating to both a-axis grain and nonsuperconducting phase formation. With additional optimization, LNO could be a promising buffer layer for both YBCO and Tl-based superconducting films, perhaps ideally suited for coated conductor applications

Indium-free Cu/fluorine doped ZnO composite transparent conductive electrodes with stretchable and flexible performance on poly(ethylene terephthalate) substrate

Science.gov (United States)

Han, Jun; Gong, Haibo; Yang, Xiaopeng; Qiu, Zhiwen; Zi, Min; Qiu, Xiaofeng; Wang, Hongqiang; Cao, Bingqiang

2015-03-01

Material-abundant ZnO and metal thin film have been proposed as potential alternatives for the most widely commercial indium tin oxide (ITO) transparent and conductive electrode. Yet the deterioration of optical transparency and conductivity for these materials makes them difficult to compete with ITO. In this work, a double-layer structured film-composed of FZO and Cu film is presented at room temperature, which combines the high transparency of FZO and high conductivity of Cu film. We first studied the effect of oxygen pressure on the transparency and conductivity of free-standing FZO layer deposited on poly(ethylene terephthalate) (PET) by PLD method. Also the structural, electrical, and optical properties of bilayers electrode dependence on the Cu layer thickness were optimized in detail. As the Cu layer thickness increases, the resistivity decreases. The lowest resistivity of 6.6 × 10-5 Ω cm with a carrier concentration of 1.11 × 1022 cm-3 and mobility of 8.52 cm2 V-1 s-1 was obtained at the optimum Cu (12 nm) layer thickness. We find that FZO layer have anti-reflection effect for Cu/FZO (250 nm) bilayer in the wavelength range of 650-1000 nm compared with single Cu layer. And we firstly study the stretchable performance for Cu film-based composite electrodes with stretching ratio changing from 0 to 5%. Furthermore, we study excellent mechanical flexibility and stability of composite electrodes by bending test.

Intense coherent longitudinal optical phonons in CuI thin films under exciton-excitation conditions

International Nuclear Information System (INIS)

Kojima, O.; Mizoguchi, K.; Nakayama, M..

2005-01-01

We have investigated the dynamical properties of the coherent longitudinal optical (LO) phonon in CuI thin films grown on a NaCl substrate by vacuum deposition. The intense coherent LO phonon in the CuI thin film is observed under the exciton-excitation conditions. Moreover, the pump-energy dependence of the amplitude of the coherent LO phonon shows peaks at the heavy-hole and light-hole exciton energies. The enhancement of the coherent LO phonon under the exciton-resonance condition is much larger than that in an ordinary semiconductor quantum well system such as a GaAs/AlAs one. These facts demonstrate that the intense coherent LO phonon is generated under the exciton-excitation condition in a material with a strong exciton-phonon interaction such as CuI

Effect of Cu{sup 2+}/Al{sup 3+} mole ratio on structure of Cu-Al bimetallic nanoparticles prepared by radiation induced method

Energy Technology Data Exchange (ETDEWEB)

Abedini, Alam; Larki, Farhad; Saion, Elias; Noroozi, Monir [Putra Malaysia Univ., Serdang, Selangor (Malaysia). Dept. of Physics

2013-07-15

Cu-Al bimetallic nanoparticles were synthesized by gamma irradiation technique in aqueous solutions containing metal chlorides as precursors, polyvinyl alcohol (PVA) as a capping agent, isopropanol as a radical scavenger, and distilled water as a solvent. The Cu-Al bimetallic nanoparticles were characterized by transmission electron microscopy (TEM), UV-visible absorption spectrometry, powder X-ray diffractometer (XRD), and Energy-dispersive X-ray spectroscopy (EDX). The TEM, XRD, EDX, and absorption analyses confirmed the formation of core-shell structure of Cu-Al bimetallic nanoparticles at lower Cu{sup 2+}/Al{sup 3+} mole ratio, and the formation of Cu-Al alloy nanoparticles at higher Cu{sup 2+}/Al{sup 3+} mole ratio. The TEM analysis for particle size and size distribution revealed that the average particle size of Cu-Al bimetallic nanoparticles decreased with the increase of absorbed dose. It may be explained due to the competition between nucleation and aggregation processes in the formation of metallic nanoparticles under irradiation. (orig.)

Morphological evolution in dewetting polystyrene/polyhedral oligomeric silsesquioxane thin film bilayers.

Science.gov (United States)

Paul, Rituparna; Karabiyik, Ufuk; Swift, Michael C; Hottle, John R; Esker, Alan R

2008-05-06

Morphological evolution in dewetting thin film bilayers of polystyrene (PS) and a polyhedral oligomeric silsesquioxane (POSS), trisilanolphenyl-POSS (TPP), was studied as a function of annealing temperature and annealing time. The results demonstrate unique dewetting morphologies in PS/TPP bilayers at elevated temperatures that are significantly different from those typically observed in dewetting polymer/polymer bilayers. During temperature ramp studies by optical microscopy (OM) in the reflection mode, PS/TPP bilayers form cracks with a weak optical contrast at approximately 130 degrees C. The crack formation is attributed to tensile stresses within the upper TPP layer. The weak optical contrast of the cracks observed in the bilayers for annealing temperatures below approximately 160 degrees C is consistent with the cracking and dewetting of only the upper TPP layer from the underlying PS layer. The optical contrast of the morphological features is significantly enhanced at annealing temperatures of >160 degrees C. This observation suggests dewetting of both the upper TPP and the lower PS layers that results in the exposure of the silicon substrate. Upon annealing the PS/TPP bilayers at 200 degrees C in a temperature jump experiment, the upper TPP layer undergoes instantaneous cracking as observed by OM. These cracks in the upper TPP layer serve as nucleation sites for rapid dewetting and aggregation of the TPP layer, as revealed by OM and atomic force microscopy (AFM). X-ray photoelectron spectroscopy (XPS) results indicated that dewetting of the lower PS layer ensued for annealing times >5 min and progressed up to 90 min. For annealing times >90 min, OM, AFM, and XPS results revealed complete dewetting of both the layers with the formation of TPP encapsulated PS droplets.

Low-cost and eco-friendly nebulizer spray coated CuInAlS2 counter electrode for dye-sensitized solar cells

Science.gov (United States)

Dhas, C. Ravi; Christy, A. Jennifer; Venkatesh, R.; Esther Santhoshi Monica, S.; Panda, Subhendu K.; Subramanian, B.; Ravichandran, K.; Sudhagar, P.; Raj, A. Moses Ezhil

2018-05-01

CuInAlS2 thin films for different substrate temperatures were deposited by a novel nebulizer spray technique. The polycrystalline CIAS thin film exhibited tetragonal structure with the preferential orientation of (1 1 2) plane. Nanoflakes were observed from the surface morphology of CIAS film. The peak position of core level spectra confirms the presence of CuInAlS2 from XPS analysis. The absorbance spectra and optical band gap were observed from the optical property. The activation energy, carrier concentration, hole mobility and resistivity were determined by linear four probe and Hall effect measurements. The CIAS film was used as a counter electrode (CE) in dye-sensitized solar cells (DSSCs) and is characterized by cyclic voltammetry, electrochemical impedance spectroscopy and Tafel measurements. DSSC fabricated with the CIAS CE achieved the photo conversion efficiency of about 2.55%.

Superconducting Tl2Ba2CaCu2O8 thin films prepared by post-annealing in a flow-through multiple-zone furnace

International Nuclear Information System (INIS)

Pluym, T.C.; Muenchausen, R.E.; Arendt, P.N.

1994-01-01

Tl 2 Ba 2 CaCu 2 O 8 thin films were prepared for the first time by use of a multiple-zone flow-through thallination process. Thallous oxide was volatilized from condensed thallium oxide in a low temperature source zone and convectively transported to a higher temperature thallination zone in which initially amorphous Ba 2 CaCu 2 O 5 precursor films were located. By careful control of the source temperature, film temperature, flow rate, anneal time, and rates of heat up and cool down, smooth Tl 2 Ba 2 CaCu 2 O 8 thin films were prepared on (100) LaAlO 3 with the following properties: inductive T c of 107.6 K and 80% transition width of 1.3 K, transport J c at 75 K of 1.3 x 10 5 A/cm 2 , and R s at 10 GHz and 80 K of 1.3 mΩ. The scalability of the process to large area film processing was demonstrated by the preparation of Tl 2 Ba 2 CaCu 2 O 8 thin films on LaAlO 3 three-inch diameter wafers

Preparation and Characterization of Cu(In,GaSe2 Thin Films by Selenization of Cu0.8Ga0.2 and In2Se3 Precursor Films

Directory of Open Access Journals (Sweden)

Jiang Liu

2012-01-01

Full Text Available Se-containing precursor films with two different compositions were prepared by magnetron sputtering from and targets, and then were selenized using Se vapor. The effects of precursor composition and selenization temperature on the film properties were investigated. The results show that Se phase plays a critical role in film growth and electrical properties of CIGS films. The Cu-rich films exhibit different surface morphology and better crystallinity, as compared to the Cu-poor films. All the CIGS films exhibit p-type conductivity. The resistivity of the Cu-rich films is about three orders of magnitude lower than that of the Cu-poor films, which is attributed to the presence of p-type highly conductive Se phase.

Local Electrical Response in Alkaline-Doped Electrodeposited CuInSe2/Cu Films

Directory of Open Access Journals (Sweden)

Javier A. Barón-Miranda

2016-12-01

Full Text Available The local electrical response in alkaline-doped CuInSe2 films prepared by single-step electrodeposition onto Cu substrates was studied by current-sensing atomic force microscopy. The CuInSe2 (CIS films were prepared from single baths containing the dopant ions (Li, Na, K or Cs and were studied by X-ray diffraction, scanning electron microscopy, energy dispersive X-ray spectroscopy and photocurrent response. Increased crystallinity and surface texturing as the ion size increased were observed, as well as an enhanced photocurrent response in Cs-doped CIS. Li- and Na-doped films had larger conductivity than the undoped film while the K- and Cs-doped samples displayed shorter currents and the current images indicated strong charge accumulation in the K- and Cs-doped films, forming surface capacitors. Corrected current-sensing AFM IV curves were adjusted with the Shockley equation.

Compositional ratio effect on the surface characteristics of CuZn thin films

Science.gov (United States)

Choi, Ahrom; Park, Juyun; Kang, Yujin; Lee, Seokhee; Kang, Yong-Cheol

2018-05-01

CuZn thin films were fabricated by RF co-sputtering method on p-type Si(100) wafer with various RF powers applied on metallic Cu and Zn targets. This paper aimed to determine the morphological, chemical, and electrical properties of the deposited CuZn thin films by utilizing a surface profiler, atomic force microscopy (AFM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), UV photoelectron spectroscopy (UPS), and a 4-point probe. The thickness of the thin films was fixed at 200 ± 8 nm and the roughness of the thin films containing Cu was smaller than pure Zn thin films. XRD studies confirmed that the preferred phase changed, and this tendency is dependent on the ratio of Cu to Zn. AES spectra indicate that the obtained thin films consisted of Cu and Zn. The high resolution XPS spectra indicate that as the content of Cu increased, the intensities of Zn2+ decreased. The work function of CuZn thin films increased from 4.87 to 5.36 eV. The conductivity of CuZn alloy thin films was higher than pure metallic thin films.

Enhanced Optical and Electrical Properties of TiO_2 Buffered IGZO/TiO_2 Bi-Layered Films

International Nuclear Information System (INIS)

Moon, Hyun-Joo; Kim, Daeil

2016-01-01

In and Ga doped ZnO (IGZO, 100-nm thick) thin films were deposited by radio frequency magnetron sputtering without intentional substrate heating on a bare glass substrate and a TiO_2-deposited glass substrate to determine the effect of the thickness of a thin TiO_2 buffer layer on the structural, optical, and electrical properties of the films. The thicknesses of the TiO_2 buffer layers were 5, 10 and 15 nm, respectively. As-deposited IGZO films with a 10 nm-thick TiO_2 buffer layer had an average optical transmittance of 85.0% with lower resistivity (1.83×10-2 Ω cm) than that of IGZO single layer films. The figure of merit (FOM) reached a maximum of 1.44×10-4 Ω-1 for IGZO/10 nm-thick TiO_2 bi-layered films, which is higher than the FOM of 6.85×10-5 Ω-1 for IGZO single layer films. Because a higher FOM value indicates better quality transparent conducting oxide (TCO) films, the IGZO/10 nm-thick TiO_2 bi-layered films are likely to perform better in TCO applications than IGZO single layer films.

Micro-chip initiator realized by integrating Al/CuO multilayer nanothermite on polymeric membrane

International Nuclear Information System (INIS)

Taton, G; Lagrange, D; Conedera, V; Rossi, C; Renaud, L

2013-01-01

We have developed a new nanothermite based polymeric electro-thermal initiator for non-contact ignition of a propellant. A reactive Al/CuO multilayer nanothermite resides on a 100 µm thick SU-8/PET (polyethyleneterephtalate) membrane to insulate the reactive layer from the silicon bulk substrate. When current is supplied to the initiator, the chemical reaction Al+CuO occurs and sparkles are spread to a distance of several millimeters. A micro-manufacturing process for fabricating the initiator is presented and the electrical behaviors of the ignition elements are also investigated. The characteristics of the initiator made on a 100 µm thick SU-8/PET membrane were compared to two bulk electro-thermal initiators: one on a silicon and one on a Pyrex substrate. The PET devices give 100% of Al/CuO ignition success for an electrical current >250 mA. Glass based reactive initiators give 100% of Al/CuO ignition success for an electrical current >500 mA. Reactive initiators directly on silicon cannot initiate even with a 4 A current. At low currents (<1 A), the initiation time is two orders of magnitude longer for Pyrex initiator compared to those obtained for PET initiator technology. We also observed that, the Al/CuO thermite film on PET membrane reacts within 1 ms (sparkles duration) whereas it reacts within 4 ms on Pyrex. The thermite reaction is 40 times greater in intensity using the PET substrate in comparison to Pyrex. (paper)

Spray pyrolyzed Cu2SnS3 thin films for photovoltaic application

Science.gov (United States)

Patel, Biren; Waldiya, Manmohansingh; Pati, Ranjan K.; Mukhopadhyay, Indrajit; Ray, Abhijit

2018-05-01

We report the fabrication of Cu2SnS3 (CTS) thin films by a non-vacuum and low cost spray pyrolysis technique. Annealing of the as-deposited film in the sulphur atmosphere produces highly stoichiometric, granular and crystalline CTS phase. The CTS thin films shows direct optical band gap of 1.58 eV with high absorption coefficient of 105 cm-1. Hall measurement shows the carrier concentration of the order of 1021 cm-3 and a favourable resistivity of 10-3 Ω cm. A solar cell architecture of Glass/FTO/CTS/CdS/Al:ZnO/Al was fabricated and its current-voltage characteristic shows an open circuit voltage, short circuit current density and fill-factor of 12.6 mV, 20.2 µA/cm2 and 26% respectively. A further improvement in the solar cell parameters is underway.

LaNiO(3) Buffer Layers for High Critical Current Density YBa(2)Cu(3)O(7-delta) and Tl(2)Ba(2)CaCu(2)O(8-delta) Films

Energy Technology Data Exchange (ETDEWEB)

Carlson, C.M.; Parilla, P.A.; Siegal, M.P.; Ginley, D.S.; Wang, Y.-T.; Blaugher, R.D.; Price, J.C.; Overmyer, D.L.; Venturini, E.L.

1999-08-24

We demonstrate high critical current density superconducting films of YBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}} (YBCO) and Tl{sub 2}Ba{sub 2}CaCu{sub 2}O{sub 8{minus}{delta}} (Tl-2212) using LaNiO{sub 3} (LNO) buffer layers. YBCO films grown on an LNO buffer layer have only a slightly lower J{sub c} (5K, H=0) than films grown directly on a bare LaAlO{sub 3} substrate. It is noteworthy that YBCO films grown on LNO buffer layers exhibit minor microstructural disorder and enhanced flux pinning. LNO-buffered Tl-2212 samples show large reductions in J{sub c} at all temperatures and fields compared to those grown on bare LaAlO{sub 3}, correlating to both a-axis grain and nonsuperconducting phase formation. With additional optimization, LNO could be a promising buffer layer for both YBCO and Tl-based superconducting films, perhaps ideally suited for coated conductor applications.

Thermoelectric properties of bismuth antimony tellurium thin films through bilayer annealing prepared by ion beam sputtering deposition

Energy Technology Data Exchange (ETDEWEB)

Zheng, Zhuang-hao [College of Physics Science and Technology, Shenzhen University, 518060 (China); Shenzhen Key Laboratory of Sensor Technology, Shenzhen 518060 (China); Fan, Ping, E-mail: fanping308@126.com [College of Physics Science and Technology, Shenzhen University, 518060 (China); Shenzhen Key Laboratory of Sensor Technology, Shenzhen 518060 (China); Luo, Jing-ting [College of Physics Science and Technology, Shenzhen University, 518060 (China); Shenzhen Key Laboratory of Sensor Technology, Shenzhen 518060 (China); Cai, Xing-min; Liang, Guang-xing; Zhang, Dong-ping [College of Physics Science and Technology, Shenzhen University, 518060 (China); Ye, Fan [Shenzhen Key Laboratory of Sensor Technology, Shenzhen 518060 (China)

2014-07-01

Bismuth antimony tellurium is one of the most important tellurium-based materials for high-efficient thermoelectric application. In this paper, ion beam sputtering was used to deposit Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} bilayer thin films on borosilicate substrates at room-temperature. Then the bismuth antimony tellurium thin films were synthesized via post thermal treatment of the Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} bilayer thin films. The effect of annealing temperature and compositions on the thermoelectric properties of the thin films was investigated. After the thin films were annealed from 150 °C to 350 °C for 1 h in the high vacuum condition, the Seebeck coefficient changed from a negative sign to a positive sign. The X-ray diffraction results showed that the synthesized tellurium-based thermoelectric thin film exhibited various alloys phases, which contributed different thermoelectricity conductivity to the synthesized thin film. The overall Seebeck coefficient of the synthesized thin film changed from negative sign to positive sign, which was due to the change of the primary phase of the tellurium-based materials at different annealing conditions. Similarly, the thermoelectric properties of the films were also associated with the grown phase. High-quality thin film with the Seebeck coefficient of 240 μV K{sup −1} and the power factor of 2.67 × 10{sup −3} Wm{sup −1} K{sup −2} showed a single Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} phase when the Sb/Te thin film sputtering time was 40 min. - Highlights: • Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} thermoelectric thin films synthesized via bilayer annealing • The film has single Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} phase with best thermoelectric performance. • The film has high thermoelectric properties comparable with other best results.

Potassium-doped n-type bilayer graphene

Science.gov (United States)

Yamada, Takatoshi; Okigawa, Yuki; Hasegawa, Masataka

2018-01-01

Potassium-doped n-type bilayer graphene was obtained. Chemical vapor deposited bilayer and single layer graphene on copper (Cu) foils were used. After etching of Cu foils, graphene was dipped in potassium hydroxide aqueous solutions to dope potassium. Graphene on silicon oxide was characterized by X-ray photoelectron spectroscopy (XPS), energy dispersive X-ray spectroscopy (EDX), and Raman spectroscopy. Both XPS and EDX spectra indicated potassium incorporation into the bilayer graphene via intercalation between the graphene sheets. The downward shift of the 2D peak position of bilayer graphene after the potassium hydroxide (KOH) treatment was confirmed in Raman spectra, indicating that the KOH-treated bilayer graphene was doped with electrons. Electrical properties were measured using Hall bar structures. The Dirac points of bilayer graphene were shifted from positive to negative by the KOH treatment, indicating that the KOH-treated bilayer graphene was n-type conduction. For single layer graphene after the KOH treatment, although electron doping was confirmed from Raman spectra, the peak of potassium in the X-ray photoelectron spectroscopy (XPS) spectrum was not detected. The Dirac points of single layer graphene with and without the KOH treatment showed positive.

Thin-film encapsulation of organic electronic devices based on vacuum evaporated lithium fluoride as protective buffer layer

Science.gov (United States)

Peng, Yingquan; Ding, Sihan; Wen, Zhanwei; Xu, Sunan; Lv, Wenli; Xu, Ziqiang; Yang, Yuhuan; Wang, Ying; Wei, Yi; Tang, Ying

2017-03-01

Encapsulation is indispensable for organic thin-film electronic devices to ensure reliable operation and long-term stability. For thin-film encapsulating organic electronic devices, insulating polymers and inorganic metal oxides thin films are widely used. However, spin-coating of insulating polymers directly on organic electronic devices may destroy or introduce unwanted impurities in the underlying organic active layers. And also, sputtering of inorganic metal oxides may damage the underlying organic semiconductors. Here, we demonstrated that by utilizing vacuum evaporated lithium fluoride (LiF) as protective buffer layer, spin-coated insulating polymer polyvinyl alcohol (PVA), and sputtered inorganic material Er2O3, can be successfully applied for thin film encapsulation of copper phthalocyanine (CuPc)-based organic diodes. By encapsulating with LiF/PVA/LiF trilayer and LiF/Er2O3 bilayer films, the device lifetime improvements of 10 and 15 times can be achieved. These methods should be applicable for thin-film encapsulation of all kinds of organic electronic devices. Moisture-induced hole trapping, and Al top electrode oxidation are suggest to be the origins of current decay for the LiF/PVA/LiF trilayer and LiF/Er2O3 bilayer films encapsulated devices, respectively.

Density functional study of CaN mono and bilayer on Cu(001)

International Nuclear Information System (INIS)

Zahedifar, Maedeh; Hashemifar, S. Javad; Akbarzadeh, Hadi

2014-01-01

Density functional - pseudopotential calculations are performed to provide first-principles insights into magnetic behaviour of bulk CaN and CaN monolayers on Cu(001) in the rock-salt (RS) and zinc-blende (ZB) structures. Our results indicate that both RS- and ZB-CaN exhibit half-metallic ferromagnetism originated from the incomplete 2p shell of the nitrogen ion. In contrast to the bulk CaN, the CaN monolayers on Cu(001) generally favor ZB structure. We argue that the more stable ZB-CaN thin films on Cu(001) are nonmagnetic, because of strong Cu-N bonding at the interface, while the less stable Ca terminated ZB-CaN thin films exhibit half-metallic ferromagnetism. The transition path between the high energy ferromagnetic and the stable nonmagnetic configurations of the ZB-CaN monolayer on Cu(001) are studied by using the nudged elastic band method. We observe a two stages transition and an activation barrier of about 1.18 eV in the minimum energy path of this transition

Composition driven monolayer to bilayer transformation in a surfactant intercalated Mg-Al layered double hydroxide.

Science.gov (United States)

Naik, Vikrant V; Chalasani, Rajesh; Vasudevan, S

2011-03-15

The structure and organization of dodecyl sulfate (DDS) surfactant chains intercalated in an Mg-Al layered double hydroxide (LDH), Mg(1-x)Alx(OH)2, with differing Al/Mg ratios has been investigated. The Mg-Al LDHs can be prepared over a range of compositions with x varying from 0.167 to 0.37 and therefore provides a simple system to study how the organization of the alkyl chains of the intercalated DDS anions change with packing density; the Al/Mg ratio or x providing a convenient handle to do so. Powder X-ray diffraction measurements showed that at high packing densities (x ≥ 0.3) the alkyl chains of the intercalated dodecyl sulfate ions are anchored on opposing LDH sheets and arranged as bilayers with an interlayer spacing of ∼27 Å. At lower packing densities (x flat in the galleries with an interlayer spacing of ∼8 Å. For the in between compositions, 0.2 ≤ x organization of the chains and the interlayer spacing. The simulations are able to reproduce the composition driven monolayer to bilayer transformation in the arrangement of the intercalated surfactant chains and in addition provide insights into the factors that decide the arrangement of the surfactant chains in the two situations. In the bilayer arrangement, it is the dispersive van der Waals interactions between chains in opposing layers of the anchored bilayer that is responsible for the cohesive energy of the solid whereas at lower packing densities, where a monolayer arrangement is favored, Coulomb interactions between the positively charged Mg-Al LDH sheets and the negatively charged headgroup of the DDS anion dominate.

Optimization of Electrochemically Deposited Highly Doped ZnO Bilayers on Ga-Rich Chalcopyrite Selenide for Cost-Effective Photovoltaic Device Technology

Directory of Open Access Journals (Sweden)

Dimitra N. Papadimitriou

2016-11-01

Full Text Available High quality polycrystalline bilayers of aluminium doped ZnO (Al:ZnO were successively electrodeposited in the form of columnar structures preferentially oriented along the ( 10 1 ¯ 1 crystallographic direction from aqueous solution of zinc nitrate (Zn(NO32 at negative electrochemical potential of EC = (−0.8–(−1.2 V and moderate temperature of 80 °C on gallium rich (30% Ga chalcopyrite selenide Cu(In,GaSe2 (CIGS with chemically deposited ZnSe buffer (ZnSe/Cu(In,GaSe2/Mo/glass. The aluminium doped ZnO layer properties have initially been probed by deposition of Al:ZnO/i-ZnO bilayers directly on Mo/glass substrates. The band-gap energy of the Al:ZnO/i-ZnO reference layers was found to vary from 3.2 to 3.7 eV by varying the AlCl3 solute dopant concentration from 1 to 20 mM. The electrical resistivity of indium-pellet contacted highly doped Al:ZnO sheet of In/Al:ZnO/i-ZnO/Mo/glass reference samples was of the order ρ ~10−5 Ω·cm; the respective carrier concentration of the order 1022 cm−3 is commensurate with that of sputtered Al:ZnO layers. For crystal quality optimization of the bilayers by maintenance of the volatile selenium content of the chalcopyrite, they were subjected to 2-step annealing under successive temperature raise and N2 flux regulation. The hydrostatic compressive strain due to Al3+ incorporation in the ZnO lattice of bilayers processed successively with 5 and 12 mM AlCl3 dopant was εh = −0.046 and the respective stress σh = −20 GPa. The surface reflectivity of maximum 5% over the scanned region of 180–900 nm and the (optical band gap of Eg = 3.67 eV were indicative of the high optical quality of the electrochemically deposited (ECD Al:ZnO bilayers.

Study of annealing effects in Al–Sb bilayer thin films

Indian Academy of Sciences (India)

There are three methods to prepare compound semiconductor systems: bilayer annealing (Singh and Vijay 2004a), rapid thermal annealing (Singh and Vijay 2004b) and ion beam mixing (Dhar et al 2003). The annealing and ion beam mixing were found to show inferior mixing effects compared to rapid thermal annealing.

Reflection Enhancement Using TiO2/SiO2 Bilayer Films Prepared by Cost-Effective Sol-gel Method

Directory of Open Access Journals (Sweden)

R. Ajay Kumar

2017-04-01

Full Text Available Multilayer dielectric thin film structure has been demanded for its application in optoelectronic devices such as optical waveguides, vertical cavity surface-emitting devices, biosensors etc. In this paper, we present the fabrication and characterization of bilayer thin films of TiO2/SiO2 using sol-gel spin coating method. Ellipsometer measurement showed refractive index values 1.46, 2.1 corresponding to the SiO2 and TiO2 films respectively. The FTIR transmittance peaks observed at ~970 cm-1, ~1100 cm-1 and ~1400 cm-1 are attributed to the Ti-O-Si, Si-O-Si and Ti-O-Ti bonds respectively. Maximum reflectance is observed from two bilayer film structure which can be further optimized to get the high reflection to a broad wavelength range.

Phase equilibria in Dy-Cu-Al system at 500 deg C

International Nuclear Information System (INIS)

Kuz'ma, Yu.B.; Milyan, V.V.

1989-01-01

Using the methods of X-ray diffraction analysis a diagram of phase equilibria in Dy-Cu-Al system at 500 deg C is plotted. Boundaries of solid solutions on the basis of DyCu 2 , DyCu and DyAl 2 compounds are determined and homogeneity regions of ternary compounds Dy 2 (Cu, Al) 7 and Dy(CuAl) 5 are ascertained. Compounds DyCuAl 3 , Dy 4 Cu 4 Al 11 and Dy 5 Cu 6 Al 9 have been detected for the first time

Relation between interfacial structure and mechanical properties in AlN/TiN bilayers investigated by EXAFS

International Nuclear Information System (INIS)

Ersen, O.; Tuilier, M.-H.; Thobor-Keck, A.; Rousselot, C.; Cortes, R.

2005-01-01

The relation between the mechanical properties and the structure of AlN/TiN bilayers prepared by reactive magnetron sputtering in the 600 nm range is investigated. Al and Ti K-edge extended X-ray absorption fine structure is used in order to determine the local order around Al and Ti by comparison with 300 nm thick AlN and TiN single layers. The use of this powerful local probe allows the evidence of intermixing between AlN and TiN deposited layers, which is suggested by glow discharge optical emission spectroscopy experiments. The effect of ionic bombardment applied at various steps of the deposition process is studied. The ionic bombardment applied during the deposit induces substantial changes in the absorption spectra that are assigned to a decrease of intermixing and an improvement of local order. Simulations of (Al, Ti)N ternary alloys Al and Ti K-edge absorption spectra for increasing mean occupation factors C Ti (C Al ) of Ti(Al) substituting Al(Ti) in hexagonal AlN (cubic TiN) lattice are performed in order to determine the initial parameters for the fit of the experimental data. The refinements performed by using FEFFIT software demonstrate that an ionic bombardment applied during the deposition phase results in a significant reduction of the number of Al-Ti pairs within the bilayer and an improvement of the local order around Ti and Al, which is quantified by a decrease of the Debye-Waller parameters. This structural evolution is tentatively correlated with the improvement of mechanical properties of the bilayers

Relation between interfacial structure and mechanical properties in AlN/TiN bilayers investigated by EXAFS

Energy Technology Data Exchange (ETDEWEB)

Ersen, O. [Equipe de Recherche Mecanique, Materiaux et Procedes de Fabrication, 61, rue Albert Camus, F-68093 Mulhouse (France)]. E-mail: ovidiu.ersen@ipcms.u-strasbg.fr; Tuilier, M.-H. [Equipe de Recherche Mecanique, Materiaux et Procedes de Fabrication, 61, rue Albert Camus, F-68093 Mulhouse (France); Thobor-Keck, A. [Centre de Recherche sur les Ecoulements les Surfaces et les Transferts (UMR CNRS 6000), ITSFC, 4, place Tharradin, BP 71427, F-25211 Montbeliard (France); Rousselot, C. [Centre de Recherche sur les Ecoulements les Surfaces et les Transferts (UMR CNRS 6000), ITSFC, 4, place Tharradin, BP 71427, F-25211 Montbeliard (France); Cortes, R. [Laboratoire de Physique de la Matiere Condensee (UMR CNRS 7643), Ecole Polytechnique, F-91128 Palaiseau cedex (France)

2005-06-01

The relation between the mechanical properties and the structure of AlN/TiN bilayers prepared by reactive magnetron sputtering in the 600 nm range is investigated. Al and Ti K-edge extended X-ray absorption fine structure is used in order to determine the local order around Al and Ti by comparison with 300 nm thick AlN and TiN single layers. The use of this powerful local probe allows the evidence of intermixing between AlN and TiN deposited layers, which is suggested by glow discharge optical emission spectroscopy experiments. The effect of ionic bombardment applied at various steps of the deposition process is studied. The ionic bombardment applied during the deposit induces substantial changes in the absorption spectra that are assigned to a decrease of intermixing and an improvement of local order. Simulations of (Al, Ti)N ternary alloys Al and Ti K-edge absorption spectra for increasing mean occupation factors C {sub Ti} (C {sub Al}) of Ti(Al) substituting Al(Ti) in hexagonal AlN (cubic TiN) lattice are performed in order to determine the initial parameters for the fit of the experimental data. The refinements performed by using FEFFIT software demonstrate that an ionic bombardment applied during the deposition phase results in a significant reduction of the number of Al-Ti pairs within the bilayer and an improvement of the local order around Ti and Al, which is quantified by a decrease of the Debye-Waller parameters. This structural evolution is tentatively correlated with the improvement of mechanical properties of the bilayers.

ZnO Nanoparticles/Reduced Graphene Oxide Bilayer Thin Films for Improved NH3-Sensing Performances at Room Temperature

Science.gov (United States)

Tai, Huiling; Yuan, Zhen; Zheng, Weijian; Ye, Zongbiao; Liu, Chunhua; Du, Xiaosong

2016-03-01

ZnO nanoparticles and graphene oxide (GO) thin film were deposited on gold interdigital electrodes (IDEs) in sequence via simple spraying process, which was further restored to ZnO/reduced graphene oxide (rGO) bilayer thin film by the thermal reduction treatment and employed for ammonia (NH3) detection at room temperature. rGO was identified by UV-vis absorption spectra and X-ray photoelectron spectroscope (XPS) analyses, and the adhesion between ZnO nanoparticles and rGO nanosheets might also be formed. The NH3-sensing performances of pure rGO film and ZnO/rGO bilayer films with different sprayed GO amounts were compared. The results showed that ZnO/rGO film sensors exhibited enhanced response properties, and the optimal GO amount of 1.5 ml was achieved. Furthermore, the optimal ZnO/rGO film sensor showed an excellent reversibility and fast response/recovery rate within the detection range of 10-50 ppm. Meanwhile, the sensor also displayed good repeatability and selectivity to NH3. However, the interference of water molecules on the prepared sensor is non-ignorable; some techniques should be researched to eliminate the effect of moisture in the further work. The remarkably enhanced NH3-sensing characteristics were speculated to be attributed to both the supporting role of ZnO nanoparticles film and accumulation heterojunction at the interface between ZnO and rGO. Thus, the proposed ZnO/rGO bilayer thin film sensor might give a promise for high-performance NH3-sensing applications.

Antimicrobial activities of CuO films deposited on Cu foils by solution chemistry

Energy Technology Data Exchange (ETDEWEB)

Ekthammathat, Nuengruethai [Department of Chemistry, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thongtem, Titipun, E-mail: ttpthongtem@yahoo.com [Department of Chemistry, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Materials Science Research Center, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thongtem, Somchai, E-mail: schthongtem@yahoo.com [Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Materials Science Research Center, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand)

2013-07-15

Monoclinic CuO thin films on Cu foils were successfully synthesized by a simple wet chemical method in alkaline solution with the pH of 13 at room temperature for different lengths of time. The as-synthesized thin films were characterized by X-ray diffraction (XRD), Fourier transform infrared (FTIR) spectroscopy, scanning electron microscopy (SEM), transmission electron microscopy (TEM) and selected area electron diffraction (SAED). Formation mechanism of the phase and morphologies was also discussed according to the experimental results. In this research, assemblies of pure CuO nanospindles with different orientations containing in the thin film synthesized for 2 weeks with 400 nm and 413 nm violet emissions showed better antimicrobial activity against S. aureus than E. coli.

Antimicrobial activities of CuO films deposited on Cu foils by solution chemistry

International Nuclear Information System (INIS)

Ekthammathat, Nuengruethai; Thongtem, Titipun; Thongtem, Somchai

2013-01-01

Monoclinic CuO thin films on Cu foils were successfully synthesized by a simple wet chemical method in alkaline solution with the pH of 13 at room temperature for different lengths of time. The as-synthesized thin films were characterized by X-ray diffraction (XRD), Fourier transform infrared (FTIR) spectroscopy, scanning electron microscopy (SEM), transmission electron microscopy (TEM) and selected area electron diffraction (SAED). Formation mechanism of the phase and morphologies was also discussed according to the experimental results. In this research, assemblies of pure CuO nanospindles with different orientations containing in the thin film synthesized for 2 weeks with 400 nm and 413 nm violet emissions showed better antimicrobial activity against S. aureus than E. coli.

Determination of structural, mechanical and corrosion properties of Nb{sub 2}O{sub 5} and (Nb{sub y}Cu{sub 1−y})O{sub x} thin films deposited on Ti6Al4V alloy substrates for dental implant applications

Energy Technology Data Exchange (ETDEWEB)

Mazur, M. [Wroclaw University of Technology, Faculty of Microsystem Electronics and Photonics, Janiszewskiego 11/17, 50-372 Wroclaw (Poland); Kalisz, M., E-mail: malgorzata.kalisz@its.waw.pl [Motor Transport Institute, Jagiellońska 80, 03-301 Warsaw (Poland); Wojcieszak, D. [Wroclaw University of Technology, Faculty of Microsystem Electronics and Photonics, Janiszewskiego 11/17, 50-372 Wroclaw (Poland); Grobelny, M. [Motor Transport Institute, Jagiellońska 80, 03-301 Warsaw (Poland); Mazur, P. [Wroclaw University, Institute of Experimental Physics, Max Born 9, 50-204 Wroclaw (Poland); Kaczmarek, D.; Domaradzki, J. [Wroclaw University of Technology, Faculty of Microsystem Electronics and Photonics, Janiszewskiego 11/17, 50-372 Wroclaw (Poland)

2015-02-01

In this paper comparative studies on the structural, mechanical and corrosion properties of Nb{sub 2}O{sub 5}/Ti and (Nb{sub y}Cu{sub 1−y})O{sub x}/Ti alloy systems have been investigated. Pure layers of niobia and niobia with a copper addition were deposited on a Ti6Al4V titanium alloy surface using the magnetron sputtering method. The physicochemical properties of the prepared thin films were examined with the aid of XRD, XPS SEM and AFM measurements. The mechanical properties (i.e., nanohardness, Young's modulus and abrasion resistance) were performed using nanoindentation and a steel wool test. The corrosion properties of the coatings were determined by analysis of the voltammetric curves. The deposited coatings were crack free, exhibited good adherence to the substrate, no discontinuity of the thin film was observed and the surface morphology was homogeneous. The hardness of pure niobium pentoxide was ca. 8.64 GPa. The obtained results showed that the addition of copper into pure niobia resulted in the preparation of a layer with a lower hardness of ca. 7.79 GPa (for niobia with 17 at.% Cu) and 7.75 GPa (for niobia with 25 at.% Cu). The corrosion properties of the tested thin films deposited on the surface of titanium alloy depended on the composition of the thin layer. The addition of copper (i.e. a noble metal) to Nb{sub 2}O{sub 5} film increased the corrosion resistance followed by a significant decrease in the value of corrosion currents and, in case of the highest Cu content, the shift of corrosion potential towards the noble direction. The best corrosion properties were obtained from a sample of Ti6Al4V coated with (Nb{sub 0.75}Cu{sub 0.25})O{sub x} thin film. It seems that the tested materials could be used in the future as protection coatings for Ti alloys in biomedical applications such as implants. - Highlights: • Nb{sub 2}O{sub 5} and Nb{sub 2}O{sub 5}:Cu thin films were deposited on a Ti–Al–V surface using the magnetron sputtering. �

Chalcopyrite CuInSe2 films prepared by reactive sputtering

International Nuclear Information System (INIS)

Lommasson, T.C.; Burnett, A.F.; Chou, L.H.; Thornton, J.A.; Kim, M.

1987-01-01

Polycrystalline films of CuInSe 2 have been prepared on glass substrates by reactive cosputtering from Cu and In planar magnetron targets using Ar-H 2 Se as a working gas. The film compositions were close to the Cu 2 Se-In 2 Se 3 tie-line of the ternary phase diagram with Cu/In ratios ranging from 0.75 to about 2. This paper reports on measurements of the structural, electronic and optical properties of the films. The coatings on the Cu-rich side of the stoichiometric composition were characterized by a columnar structure with an uneven surface topography

Structural and electrical properties of co-evaporated Cu(In,Ga)Se{sub 2} thin films with varied Cu contents

Energy Technology Data Exchange (ETDEWEB)

Kim, Min Young; Kim, Girim; Kim, Jongwan; Park, Jae Hwan; Lim, Donggun, E-mail: dglim@ut.ac.kr

2013-11-01

Cu(In,Ga)Se{sub 2} (CIGS) thin films were fabricated with varying Cu contents. Cu/(Ga + In) ratios were varied between 0.4 and 1.02. Solar cells were then fabricated by co-evaporation using the CIGS layers as absorbers. The influences of Cu content on the cells' structural, optical and electrical properties were studied. The CIGS thin films were characterized by X-ray diffractometer, scanning electron microscopy, energy-dispersive spectroscopy, four-point probe measurement and Hall measurement. Grain size in the films increased with increasing Cu content. At a Cu/(Ga + In) ratio of 0.86, the (220/204) peak was stronger than the (112) peak and carrier concentration was 1.49 × 10{sup 16} cm{sup −3}. Optimizing the Cu content resulted in a CIGS solar cell with an efficiency of 16.5%. - Highlights: • Improvement of technique to form Cu(In,Ga)Se{sub 2} (CIGS) film by co-evaporation method • Cu/(In + Ga) ratio to improve the efficiency for CIGS thin film solar cell • Cu content effects have been analyzed. • Optimum condition of CIGS layer as an absorber of thin film solar cells.

TEM and TED investigation of Ag/PbTe thin film bilayers.

Science.gov (United States)

Mandrino, Đorđe; Marinković, V.

Morphology and phase structure of Ag/PbTe thin film bilayers were investigated. This system was of particular interest because of interfacial reaction observed previously in an analogous Ag/SnTe system. Reaction products due to the interdiffusion of Ag with the substrate were determined as well as their orientations. They were discussed in view of the reaction products' structural relations to the PbTe.

Al-Si/Al2O3 in situ composite prepared by displacement reaction of CuO/Al system

Directory of Open Access Journals (Sweden)

Zhang Jing

2010-02-01

Full Text Available Al2O3 particle-reinforced ZL109 composite was prepared by in situ reaction between CuO and Al. The microstructure was observed by means of OM, SEM and TEM. The Al2O3 particles in sub-micron sizes distribute uniformly in the matrix, and the Cu displaced from the in situ reaction forms net-like alloy phases with other alloy elements. The hardness and the tensile strength of the composites at room temperature have a slight increase as compared to that of the matrix. However, the tensile strength at 350 ℃ has reached 90.23 MPa, or 16.92 MPa higher than that of the matrix. The mechanism of the reaction in the CuO/Al system was studied by using of differential scanning calorimetry(DSC and thermodynamic calculation. The reaction between CuO and Al involves two steps. First, CuO reacts with Al to form Cu2O and Al2O3 at the melting temperature of the matrix alloy, and second, Cu2O reacts with Al to form Cu and Al2O3 at a higher temperature. At ZL109 casting temperature of 750–780 ℃, the second step can also take place because of the effect of exothermic reaction of the first step.

Investigation of new type Cu-Hf-Al bulk glassy alloys

International Nuclear Information System (INIS)

Nagy, E; Ronto, V; Solyom, J; Roosz, A

2009-01-01

In the last years new type Cu-Hf-Al ternary alloys were developed with high glass forming ability and ductility. The addition of Al to Cu-Hf alloys results in improvements in glass formation, thermal stability and mechanical properties of these alloys. We have investigated new Cu-based bulk amorphous alloys in Cu-Hf-Al ternary system. The alloys with Cu 49 Hf 42 Al 9 , Cu 46 Hf 45 Al 9 , Cu 50 Hf 42.5 Al 7.5 and Cu 50 Hf 45 Al 5 compositions were prepared by arc melting. The samples were made by centrifugal casting and were investigated by X-ray diffraction method. Thermodynamic properties were examined by differential scanning calorimetry and the structure of the crystallising phases by scanning electron microscopy. The determination of liquidus temperatures of alloys were measured by differential thermal analysis.

Investigation of annealing treatment on the interfacial properties of explosive-welded Al/Cu/Al multilayer

International Nuclear Information System (INIS)

Honarpisheh, M.; Asemabadi, M.; Sedighi, M.

2012-01-01

Highlights: ► We studied explosive-welded Al/Cu/Al multilayer. ► We investigated heat treatment influence on the bond properties of Al/Cu/Al. ► Intermetallic compounds were studied using the SEM, OM and EDS analysis. ► Variations of hardness in the thickness were investigated using micro-hardness. ► Intermetallic phases such as AlCu 3 and Al 2 C create at the interface of Al/Cu/Al. -- Abstract: In this study, an Al/Cu/Al multilayer sheet was fabricated by explosive welding process and the effects of annealing temperature on the interfacial properties of explosively bonded Al/Cu bimetal have been investigated. For this purpose, hardness changes along the thickness of the samples have been measured, and the thickness and type of intermetallic compounds formed at the joining interface have been explored by means of optical microscopy (OM), scanning electron microscopy (SEM) and also energy dispersive spectroscopy (EDS). The obtained results indicate that, with the increase of the annealing temperature, the thickness of intermetallic compounds has increased and the amount of hardness along the thickness of the joining interface has diminished. In the annealed sample at 400 °C for 30 min, it was observed that intermetallic layers have formed at the interface of Al/Cu bimetals. These layers consist of the intermetallic compounds AlCu 3 , Al 2 Cu and AlCu, and their thickness gets to about 5 μm at some points. The examinations performed by the SEM, following the Vickers micro-hardness test, indicated the existence of a number of microcracks at the top and bottom interface of the sample annealed at 400 °C. This shows the formation of brittle intermetallic compounds at the joining interface, and also indicates the low ductility of these compounds.

Microstructure, Magnetic, and Magnetoresistance Properties of La0.7Sr0.3MnO3:CuO Nanocomposite Thin Films.

Science.gov (United States)

Fan, Meng; Wang, Han; Misra, Shikhar; Zhang, Bruce; Qi, Zhimin; Sun, Xing; Huang, Jijie; Wang, Haiyan

2018-02-14

(La 0.7 Sr 0.3 MnO 3 ) 0.67 :(CuO) 0.33 (LSMO:CuO) nanocomposite thin films were deposited on SrTiO 3 (001), LaAlO 3 (001), and MgO (001) substrates by pulsed laser deposition, and their microstructure as well as magnetic and magnetoresistance properties were investigated. X-ray diffraction (XRD) and transmission electron microscopy (TEM) results show that LSMO:CuO films grow as highly textured self-assembled vertically aligned nanocomposite (VAN), with a systematic domain structure and strain tuning effect based on the substrate type and laser deposition frequency. A record high low-field magnetoresistance (LFMR) value of ∼80% has been achieved in LSMO:CuO grown on LaAlO 3 (001) substrate under high frequency. Detailed analysis indicates that both the strain state and the phase boundary effect play a significant role in governing the overall LFMR behavior.

Optical properties of CuCdTeO thin films sputtered from CdTe-CuO composite targets

Energy Technology Data Exchange (ETDEWEB)

Mendoza-Galván, A., E-mail: amendoza@qro.cinvestav.mx [Cinvestav-IPN, Unidad Querétaro, Libramiento Norponiente 2000, 76230 Querétaro (Mexico); Laboratory of Applied Optics, Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping (Sweden); Arreola-Jardón, G. [Cinvestav-IPN, Unidad Querétaro, Libramiento Norponiente 2000, 76230 Querétaro (Mexico); Karlsson, L.H.; Persson, P.O.Å. [Thin Film Physics Division, Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping (Sweden); Jiménez-Sandoval, S. [Cinvestav-IPN, Unidad Querétaro, Libramiento Norponiente 2000, 76230 Querétaro (Mexico)

2014-11-28

The effective complex dielectric function (ε) of Cu and O containing CdTe thin films is reported in the spectral range of 0.05 to 6 eV. The films were fabricated by rf sputtering from targets comprised by a mixture of CdTe and CuO powders with nominal Cu and O concentrations in the range of 2–10 at.%. Low concentration levels improved the crystalline quality of the films. Spectroscopic ellipsometry and transmittance measurements were used to determine ε. The critical point energies E{sub 1}, E{sub 1} + Δ{sub 1}, and E{sub 2} of CdTe are red-shifted with the incorporation of Cu and O. Also, an absorption band is developed in the infrared range which is associated with a mixture of CdTe and low resistivity phases Cu{sub 2−x}Te according to an effective medium analysis. The elemental distribution of the films was mapped by energy dispersive X-ray spectroscopy using scanning transmission electron microscopy. - Highlights: • Incorporation of 2 to 10 at.% of Cu and O atoms in CdTe films • Improved crystalline quality with 2 and 3 at.% of Cu and O • Complex dielectric function of Cu and O containing CdTe thin films • Effective medium modeling of below band-gap absorption.

Local Plasticity of Al Thin Films as Revealed by X-Ray Microdiffraction

Science.gov (United States)

Spolenak, R.; Brown, W. L.; Tamura, N.; MacDowell, A. A.; Celestre, R. S.; Padmore, H. A.; Valek, B.; Bravman, J. C.; Marieb, T.; Fujimoto, H.; Batterman, B. W.; Patel, J. R.

2003-03-01

Grain-to-grain interactions dominate the plasticity of Al thin films and establish effective length scales smaller than the grain size. We have measured large strain distributions and their changes under plastic strain in 1.5-μm-thick Al0.5%Cu films using a 0.8-μm-diameter white x-ray probe at the Advanced Light Source. Strain distributions arise not only from the distribution of grain sizes and orientation, but also from the differences in grain shape and from stress environment. Multiple active glide plane domains have been found within single grains. Large grains behave like multiple smaller grains even before a dislocation substructure can evolve.

Microstructural characterization and compression properties of TiC0.61/Cu(Al) composite synthesized from Cu and Ti3AlC2 powders

International Nuclear Information System (INIS)

Huang, Zhenying; Bonneville, Joel; Zhai, Hongxiang; Gauthier-Brunet, Veronique

2014-01-01

Highlights: • Submicro-layered TiC 0.61 /Cu(Al) nanocomposite. • MAX phase. • High yield stress. • Deformation mechanism. - Abstract: A new submicro-layered TiC 0.61 /Cu(Al) composite has been prepared by hot-pressing a mixture of 50 vol.% Ti 3 AlC 2 and 50 vol.% Cu powders at 1150 °C and 30 MPa. It is shown that the initial reinforcement Ti 3 AlC 2 particles have, after synthesis, an unusual microstructure, which consists of submicron-thick layers of TiC 0.61 and Cu(Al) alloy. Both the width of the TiC 0.61 and Cu(Al) layers are ∼150 nm. Thus, the Ti 3 AlC 2 particles are decomposed into the TiC 0.61 phase, while the additional Al atoms provided by Ti 3 AlC 2 diffuse into the molten Cu matrix at high temperature. Compression tests were performed at constant strain rate in the temperature range 20–800 °C. The new designed TiC 0.61 /Cu(Al) composite has both a high yield stress, σ 0.2 measured at 0.2% strain offset, and a high ultimate compressive strength, σ UCS , which is attributed to strong interface bonding between TiC 0.61 and Cu(Al) phase. For instance, at 20 and 200 °C, σ 0.2 is 770 MPa and 700 MPa, while σ UCS is 1.18 GPa and 1 GPa, respectively. Plastic deformation takes place in the Cu(Al) matrix. Wavy slip lines are observed indicating that cross-slip could be the dominant deformation mechanism

Nonmonotonic behaviour of superconducting critical temperature of Nb/CuNi bilayers with a nanometer range of layer thickness

International Nuclear Information System (INIS)

Morari, R.; Antropov, E.; Socrovisciuc, A.; Prepelitsa, A.; Zdravkov, V.I.; Tagirov, L.R.; Kupriyanov, M.Yu.; Sidorenko, A.S.

2009-01-01

Present work reports the result of the proximity effect investigation for superconducting Nb/CuNi-bilayers with the thickness of the ferromagnetic layer (Cu x Ni 1-x ) being in the sub-nanometer range. It was found a non-monotonic behavior of the critical temperature T c , i.e. its growth with the increasing of the ferromagnetic layer thickness dF, for the series of the samples with constant thickness of Nb layer, (d Nb = const). (authors)

Experimental and thermodynamic investigation of Al-Cu-Nd ternary system

Energy Technology Data Exchange (ETDEWEB)

Bai, W.M. [School of Materials Science and Engineering, Central South University, Changsha, 410083 (China); Jiang, Y. [Hunan Sushi Guangbo Testing Techniques Co. LTD, Changsha (China); Guo, Z.Y.; Zeng, L.J.; Tan, M.Y. [School of Materials Science and Engineering, Central South University, Changsha, 410083 (China); Meggs, C. [School of Metallurgy and Materials, The University of Birmingham, Edgbaston, Birmingham, B15 2TT (United Kingdom); Zhang, L.G., E-mail: ligangzhang@csu.edu.cn [School of Materials Science and Engineering, Central South University, Changsha, 410083 (China); Liu, L.B., E-mail: pdc@csu.edu.cn [School of Materials Science and Engineering, Central South University, Changsha, 410083 (China); Jin, Z.P. [School of Materials Science and Engineering, Central South University, Changsha, 410083 (China)

2017-07-01

The phase relationships in the Al–Cu-Nd ternary system at 673 K have been investigated by X-ray powder diffraction (XRD) and scanning electron microscope (SEM) with energy disperse X-ray spectroscopy (EDS) in backscattered electron imaging (BSE) modes. The existence of six ternary Stoichiometric compounds, namely τ{sub 1}-Al{sub 8}Cu{sub 4}Nd, τ{sub 2}-Al{sub 9}Cu{sub 8}Nd{sub 2}, τ{sub 3}-Al{sub 6}Cu{sub 7}Nd, τ{sub 4}-Al{sub 2.4}Cu{sub 8.6}Nd, τ{sub 5}-Al{sub 3}CuNd, τ{sub 6}-AlCuNd, have been confirmed. A complete thermodynamic description of the Al–Cu-Nd ternary system coupled with the CALPHAD method is obtained based on experimental results and first-principles calculations. The calculated phase equilibria were in agreement with the available experimental data. - Highlights: • Phase relationships in the Al-Cu-Nd system has been systematically investigated. • 9 three-phase regions and 4 two-phase regions are confirmed. • A complete thermodynamic description of the Al-Cu-Nd system is obtained. • Results of first-principle calculation consist with thermodynamic calculation.

Mechanical properties of Al-Cu alloy-SiC composites

Science.gov (United States)

Anggara, B. S.; Handoko, E.; Soegijono, B.

2014-09-01

The synthesis of aluminum (Al) alloys, Al-Cu, from mixture 96.2 % Al and 3.8 % Cu has been prepared by melting process at a temperature of 1200°C. The adding 12.5 wt% up to 20 wt% of SiC on Al-Cu alloys samples has been investigated. The structure analyses were examined by X-Ray Diffractometer (XRD) and scanning electron microscope (SEM). Moreover, the morphology of Al-Cu alloys has been seen as structure in micrometer range. The hardness was measured by hardness Vickers method. According to the results, it can be assumed that the 15 wt% of SiC content is prefer content to get better quality of back to back hardness Vickers of Al-Cu alloys.

Mechanical properties of Al-Cu alloy-SiC composites

Energy Technology Data Exchange (ETDEWEB)

Anggara, B. S., E-mail: anggorobs1960@yahoo.com [Jurusan Fisika, FMIPA Universitas Negeri Jakarta, Indonesia 13220 and PPS Ilmu Material, Department Fisika, FMIPA, Universitas Indonesia (Indonesia); Handoko, E. [Jurusan Fisika, FMIPA Universitas Negeri Jakarta, 13220 (Indonesia); Soegijono, B. [PPS Ilmu Material, Department Fisika, FMIPA, Universitas Indonesia (Indonesia)

2014-09-25

The synthesis of aluminum (Al) alloys, Al-Cu, from mixture 96.2 % Al and 3.8 % Cu has been prepared by melting process at a temperature of 1200°C. The adding 12.5 wt% up to 20 wt% of SiC on Al-Cu alloys samples has been investigated. The structure analyses were examined by X-Ray Diffractometer (XRD) and scanning electron microscope (SEM). Moreover, the morphology of Al-Cu alloys has been seen as structure in micrometer range. The hardness was measured by hardness Vickers method. According to the results, it can be assumed that the 15 wt% of SiC content is prefer content to get better quality of back to back hardness Vickers of Al-Cu alloys.

Fragility and structure of Al-Cu alloy melts

International Nuclear Information System (INIS)

Lv Xiaoqian; Bian Xiufang; Mao Tan; Li Zhenkuan; Guo Jing; Zhao Yan

2007-01-01

The dynamic viscosity measurements are performed for Al-Cu alloy melts with different compositions using an oscillating-cup viscometer. The results show that the viscosities of Al-Cu alloy melts increase with the copper content increasing, and also have a correlation with the correlation radius of clusters, which is measured by the high-temperature X-ray diffractometer. It has also been found that the fragilities of superheated melts (M) of hypereutectic Al-Cu alloys increase with the copper content increasing. There exists a relationship between the fragility and the structure in Al-Cu alloy melts. The value of the M reflects the variation of activation energy for viscous flow

Massive spalling of Cu-Zn and Cu-Al intermetallic compounds at the interface between solders and Cu substrate during liquid state reaction

Science.gov (United States)

Kotadia, H. R.; Panneerselvam, A.; Mokhtari, O.; Green, M. A.; Mannan, S. H.

2012-04-01

The interfacial intermetallic compound (IMC) formation between Cu substrate and Sn-3.8Ag-0.7Cu-X (wt.%) solder alloys has been studied, where X consists of 0-5% Zn or 0-2% Al. The study has focused on the effect of solder volume as well as the Zn or Al concentration. With low solder volume, when the Zn and Al concentrations in the solder are also low, the initial Cu-Zn and Al-Cu IMC layers, which form at the solder/substrate interface, are not stable and spall off, displaced by a Cu6Sn5 IMC layer. As the total Zn or Al content in the system increases by increasing solder volume, stable CuZn or Al2Cu IMCs form on the substrate and are not displaced. Increasing concentration of Zn has a similar effect of stabilizing the Cu-Zn IMC layer and also of forming a stable Cu5Zn8 layer, but increasing Al concentration alone does not prevent spalling of Al2Cu. These results are explained using a combination of thermodynamic- and kinetics-based arguments.

Transparent conductive ITO/Cu/ITO films prepared on flexible substrates at room temperature

International Nuclear Information System (INIS)

Ding Xingwei; Yan Jinliang; Li Ting; Zhang Liying

2012-01-01

Transparent conductive ITO/Cu/ITO films were deposited on PET substrates by magnetron sputtering using three cathodes at room temperature. Effects of the SiO 2 buffer layer and thickness of Cu interlayer on the structural, electrical and optical properties of ITO/Cu/ITO films were investigated. The optical transmittance was affected slightly by SiO 2 buffer layer, but the electrical properties of ITO/Cu/ITO films were improved. The transmittance and resistivity of the SiO 2 /ITO/Cu/ITO films decrease as the Cu layer thickness increases. The ITO/Cu/ITO film with 5 nm Cu interlayer deposited on the 40 nm thick SiO 2 buffer layer exhibits the sheet resistance of 143 Ω/sq and transmittance of 65% at 550 nm wavelength. The optical and electrical properties of the ITO/Cu/ITO films were mainly dependent on the Cu layer.

Transparent conductive ITO/Cu/ITO films prepared on flexible substrates at room temperature

Science.gov (United States)

Ding, Xingwei; Yan, Jinliang; Li, Ting; Zhang, Liying

2012-01-01

Transparent conductive ITO/Cu/ITO films were deposited on PET substrates by magnetron sputtering using three cathodes at room temperature. Effects of the SiO2 buffer layer and thickness of Cu interlayer on the structural, electrical and optical properties of ITO/Cu/ITO films were investigated. The optical transmittance was affected slightly by SiO2 buffer layer, but the electrical properties of ITO/Cu/ITO films were improved. The transmittance and resistivity of the SiO2/ITO/Cu/ITO films decrease as the Cu layer thickness increases. The ITO/Cu/ITO film with 5 nm Cu interlayer deposited on the 40 nm thick SiO2 buffer layer exhibits the sheet resistance of 143 Ω/sq and transmittance of 65% at 550 nm wavelength. The optical and electrical properties of the ITO/Cu/ITO films were mainly dependent on the Cu layer.

TiO2 and Cu/TiO2 Thin Films Prepared by SPT

Directory of Open Access Journals (Sweden)

S. S. Roy

2015-12-01

Full Text Available Titanium oxide (TiO2 and copper (Cu doped titanium oxide (Cu/TiO2 thin films have been prepared by spray pyrolysis technique. Titanium chloride (TiCl4 and copper acetate (Cu(CH3COO2.H2O were used as source of Ti and Cu. The doping concentration of Cu was varied from 1-10 wt. %. The X-ray diffraction studies show that TiO2 thin films are tetragonal structure and Cu/TiO2 thin films implies CuO has present with monoclinic structure. The optical properties of the TiO2 thin films have been investigated as a function of Cu-doping level. The optical transmission of the thin films was found to increase from 88 % to 94 % with the addition of Cu up to 8 % and then decreases for higher percentage of Cu doping. The optical band gap (Eg for pure TiO2 thin film is found to be 3.40 eV. Due to Cu doping, the band gap is shifted to lower energies and then increases further with increasing the concentration of Cu. The refractive index of the TiO2 thin films is found to be 2.58 and the variation of refractive index is observed due to Cu doped. The room temperature resistivity of the films decreases with increasing Cu doping and is found to be 27.50 - 23.76 W·cm. It is evident from the present study that the Cu doping promoted the thin film morphology and thereby it is aspect for various applications.

White lighting device from composite films embedded with hydrophilic Cu(In, Ga)S2/ZnS and hydrophobic InP/ZnS quantum dots

Science.gov (United States)

Kim, Jong-Hoon; Yang, Heesun

2014-06-01

Two types of non-Cd quantum dots (QDs)—In/Ga ratio-varied, green-to-greenish-yellow fluorescence-tuned Cu-In-Ga-S (CIGS) alloy ones, and red-emitting InP ones—are synthesized for use as down-converters in conjunction with a blue light-emitting diode (LED). Among a series of Ga-rich CI1-xGxS/ZnS core/shell QDs (x = 0.7, 0.8, and 0.9), CI0.2G0.8S/ZnS QD is chosen for the hydrophobic-to-hydrophilic surface modification via an in-situ ligand exchange and then embedded in a water-soluble polyvinyl alcohol (PVA). This free-standing composite film is utilized as a down-converter for the fabrication of a remote-type white QD-LED, but the resulting bi-colored device exhibits a cool white light with a limited color rendering index property. To improve white light qualities, another QD-polymer film of hydrophobic red InP/ZnS QD-embedding polyvinylpyrrolidone is sequentially stacked onto the CI0.2G0.8S/ZnS QD-PVA film, producing a unique dual color-emitting, flexible and transparent bilayered composite film. Tri-colored white QD-LED integrated with the bilayered QD film possesses an exceptional color rendering property through reinforcing a red spectral component and balancing a white spectral distribution.

Synthesis of single phase of CuTl-1234 thin films

CERN Document Server

Khan, N A; Ishida, K; Tateai, F; Kojima, T; Terada, N; Ihara, H

1999-01-01

Thin films of CuTl-1234 superconductor have been prepared for the first time using an amorphous phase epitaxy method (APE). In this method, an amorphous phase is sputtered from a target of stoichiometric composition CuBa/sub 2/Ca/sub 3/Cu/sub 4/O/sub x/. Thin films on the SrTiO/sub 3/ substrate after the thallium treatment are biaxially oriented. The XRD reflected a predominant single phase with c-axis 18.7 AA and pole figure measurements of (103) reflections showed a-axis oriented films with Delta phi =0.8 degrees . Resistivity measurements showed T/sub c/=113 K and preliminary J/sub c/ measurements manifested a current density of 1.0*10/sup 6/ A/cm (77 K, 0 T). The composition of films after EDX measurements is Cu /sub 0.3/Tl/sub 0.7/CuBa/sub 2/Ca/sub 3/Cu/sub 4/O/sub 12-y/. (8 refs).

Inhibiting properties of benzimidazole films for Cu(II)/Cu(I) reduction in chloride media studied by RDE and EQCN techniques

Energy Technology Data Exchange (ETDEWEB)

Scendo, M. [Institute of Chemistry, Saint Cross Academy, ul. Checinska 5, 25020 Kielce (Poland)]. E-mail: scendo@pu.kielce.pl; Hepel, M. [Department of Chemistry, State University of New York, Potsdam, NY 13676, USA (United States)

2007-08-15

The effects of benzimidazole (BIM) and 2-methylbenzimidazole (MBIM) on the electroreduction of Cu(II) on a rotating Pt disk electrode in chloride media were investigated. These studies were undertaken in conjunction with earlier observation that these imidazole derivatives act as inhibitors of copper corrosion processes and are non-toxic. We have found that BIM and MBIM also form adsorption films on Pt, which are able to inhibit one-electron reduction of Cu(II) to Cu(I) and prevent the development of convective diffusion limiting current wave. The inhibition was found to be controlled by field-assisted mass transfer in the film. The ingress of Cu(II) species into the film was detected using the EQCN technique. The EQCN measurements indicate that small fraction of Cu(I) formed in the film by reduction of Cu(II) is retained in the film, most likely in the form of CuCl. The uptake of CuCl by inhibitor films diminishes in strongly inhibiting films (e.g., in acidic medium). The inhibition effectiveness of Cu(II) reduction process by Pt vertical bar BIM and Pt vertical bar MBIM films increases strongly with increasing acidity of the medium in the pH range from 3.0 to 1.0. The mechanism of this remarkable pH effect has been proposed. It is based on charge and pH-induced film restructuring, including changes in orientation and protonation of BIM molecules in the film.

Enhancement of oxidation resistance in Cu and Cu(Al) thin layers

International Nuclear Information System (INIS)

Horvath, Z.E.; Peto, G.; Paszti, Z.; Zsoldos, E.; Szilagyi, E.; Battistig, G.; Lohner, T.; Molnar, G.L.; Gyulai, J.

1999-01-01

High conductivity and good resistance to electromigration makes copper a promising interconnect material in microelectronics. However, one of its disadvantages is the poor corrosion resistance. Two methods of passivation are investigated and compared: Al alloying and BF 2 + ion implantation. X-ray diffraction (XRD) and Rutherford Backscattering Spectrometry (RBS) show the oxidation inhibition of both methods, but the different ratio of CuO 2 to CuO phases suggests different mechanisms of passivation. There are no definite oxide lines in the XRD spectrum of the implanted and annealed Cu(Al) sample, so the presence of Al and the implantation together give increased protection against oxidation. The difference between the two mechanisms of oxidation inhibition is discussed briefly

Molybdenum thin film deposited by in-line DC magnetron sputtering as a back contact for Cu(In,Ga)Se{sub 2} solar cells

Energy Technology Data Exchange (ETDEWEB)

Li Zhaohui; Cho, Eou-Sik [Department of Electronics Engineering, Kyungwon University, San 65, Bokjung-dong, Soojung-gu, Seongnam city, Kyunggi-do, 461-701 (Korea, Republic of); Kwon, Sang Jik, E-mail: sjkwon@kyungwon.ac.kr [Department of Electronics Engineering, Kyungwon University, San 65, Bokjung-dong, Soojung-gu, Seongnam city, Kyunggi-do, 461-701 (Korea, Republic of)

2011-09-01

In this paper, we reported the effect of the power and the working pressure on the molybdenum (Mo) films deposited using an in-line direct current (DC) magnetron sputtering system. The electrical and the structural properties of Mo film were improved by increasing DC power from 1 to 3 kW. On the other side, the resistivity of the Mo films became higher with the increasing working pressure. However, the adhesion property was improved when the working pressure was higher. In this work, in order to obtain an optimal Mo film as a back metal contact of Cu(In,Ga)Se{sub 2} (CIGS) solar cells, a bilayer Mo film was formed through the different film structures depending on the working pressure. The first layer was formed at a high pressure of 12 mTorr for a better adhesion and the second layer was formed at a low pressure of 3 mTorr for a lower resistivity.

Epitaxial growth and properties of YBaCuO thin films

International Nuclear Information System (INIS)

Geerk, J.; Linker, G.; Meyer, O.

1989-08-01

The growth quality of YBaCuO thin films deposited by sputtering on different substrates (Al 2 O 3 , MgO, SrTiO 3 , Zr(Y)O 2 ) has been studied by X-ray diffraction and channeling experiments as a function of the deposition temperature. Besides the substrate orientation, the substrate temperature is the parameter determining whether films grow in c-, a-, (110) or mixed directions. Epitaxial growth correlates with high critical current values in the films of up to 5.5x10 6 A/cm 2 at 77 K. Ultrathin films with thicknesses down to 2 nm were grown revealing three-dimensional superconducting behaviour. Films on (100) SrTiO 3 of 9 nm thickness and below are partially strained indicating commensurate growth. From the analysis of the surface disorder 1 displaced Ba atom per Ba 2 Y row was obtained indicating that the disordered layer thickness is about 0.6 nm. Tunnel junctions fabricated on these films reveal gap-like structures near ±16 mV and ±30 mV. (orig.) [de

The electrochemical properties of melt-spun Al-Si-Cu alloys

International Nuclear Information System (INIS)

Zhang Linping; Wang Fei; Liang Pu; Song Xianlei; Hu Qing; Sun Zhanbo; Song Xiaoping; Yang Sen; Wang Liqun

2011-01-01

Highlights: → Non-equilibrium Al 75-X Si 25 Cu X alloys exhibit high lithiation storages. → The lithiation mechanism is different from melt-spun Al-Si-Mn system. → The structural evolution is mitigated in the non-equilibrium alloys. → Volume variation is alleviated due to the co-existence of Al 2 Cu, α-Si and α-Al. - Abstract: Melt spinning was used to prepare Al 75-X Si 25 Cu X (X = 1, 4, 7, 10 mol%) alloy anode materials for lithium-ion batteries. A metastable supersaturated solid solution of Si and Cu in fcc-Al, α-Si and Al 2 Cu co-existed in the alloys. Nano-scaled α-Al grains, as the matrix, formed in the as-quenched ribbons. The Al 74 Si 25 Cu 1 and Al 71 Si 25 Cu 4 anodes exhibited initial discharge specific capacities of 1539 mAh g -1 , 1324 mAh g -1 and reversible capacities above 472 mAh g -1 , 508 mAh g -1 at the 20th cycle, respectively. The specific capacities reduced as the increase of the Cu content. AlLi intermetallic compound was detected in the lithiated alloys. It is concluded that the lithiation mechanism of the Al-Si-based alloys can be affected by the third component. The structural evolution and volume variation can be mitigated due to the formation of non-equilibrium state and the co-existence of nano-scaled α-Al, α-Si, and Al 2 Cu for the present alloys.

Room Temperature Radiolytic Synthesized Cu@CuAlO₂-Al₂O₃ Nanoparticles

Directory of Open Access Journals (Sweden)

Nayereh Soltani

2012-09-01

Full Text Available Colloidal Cu@CuAlO₂-Al₂O₃ bimetallic nanoparticles were prepared by a gamma irradiation method in an aqueous system in the presence of polyvinyl pyrrolidone (PVP and isopropanol respectively as a colloidal stabilizer and scavenger of hydrogen and hydroxyl radicals. The gamma irradiation was carried out in a ⁶⁰Co gamma source chamber with different doses up to 120 kGy. The formation of Cu@CuAlO₂-Al₂O₃ nanoparticles was observed initially by the change in color of the colloidal samples from colorless to brown. Fourier transform infrared spectroscopy (FTIR confirmed the presence of bonds between polymer chains and the metal surface at all radiation doses. Results of transmission electron microscopy (TEM, energy dispersive X-ray spectrometry (EDX, and X-ray diffraction (XRD showed that Cu@CuAlO₂-Al₂O₃ nanoparticles are in a core-shell structure. By controlling the absorbed dose and precursor concentration, nanoclusters with different particle sizes were obtained. The average particle diameter increased with increased precursor concentration and decreased with increased dose. This is due to the competition between nucleation, growth, and aggregation processes in the formation of nanoclusters during irradiation.

RF magnetron sputtered TiNiCu shape memory alloy thin film

International Nuclear Information System (INIS)

Fu Yongqing; Du Hejun

2003-01-01

Shape memory alloys (SMAs) offer a unique combination of novel properties, such as shape memory effect, super-elasticity, biocompatibility and high damping capacity, and thin film SMAs have the potential to become a primary actuating mechanism for micro-actuators. In this study, TiNiCu films were successfully prepared by mix sputtering of a Ti 55 Ni 45 target with a separated Cu target. Crystalline structure, residual stress and phase transformation properties of the TiNiCu films were investigated using X-ray diffraction (XRD), differential scanning calorimeter (DSC), and curvature measurement methods. Effects of the processing parameters on the film composition, phase transformation and shape-memory effects were analyzed. Results showed that films prepared at a high Ar gas pressure exhibited a columnar structure, while films deposited at a low Ar gas pressure showed smooth and featureless structure. Chemical composition of TiNiCu thin films was dependent on the DC power of copper target. DSC, XRD and curvature measurement revealed clearly the martensitic transformation of the deposited TiNiCu films. When the free-standing film was heated and cooled, a 'two-way' shape-memory effect can be clearly observed

Elemental separation in nanocrystalline Cu-Al alloys

Science.gov (United States)

Wang, Y. B.; Liao, X. Z.; Zhao, Y. H.; Cooley, J. C.; Horita, Z.; Zhu, Y. T.

2013-06-01

Nanocrystallization by high-energy severe plastic deformation has been reported to increase the solubility of alloy systems and even to mix immiscible elements to form non-equilibrium solid solutions. In this letter, we report an opposite phenomenon—nanocrystallization of a Cu-Al single-phase solid solution by high-pressure torsion separated Al from the Cu matrix when the grain sizes are refined to tens of nanometers. The Al phase was found to form at the grain boundaries of nanocrystalline Cu. The level of the separation increases with decreasing grain size, which suggests that the elemental separation was caused by the grain size effect.

Investigation of interdiffusion in copper-nickel bilayer thin films

Energy Technology Data Exchange (ETDEWEB)

Abdul-Lettif, Ahmed M. [Physics Department, College of Science, Babylon University, Hilla (Iraq)]. E-mail: abdullettif@yahoo.com

2007-01-15

Auger depth profiling technique and X-ray diffraction analysis have been employed to study the interdiffusion in vacuum-deposited copper-nickel bilayer thin films. An adaptation of the Whipple model was used to determine the diffusion coefficients of both nickel in copper and copper in nickel. The calculated diffusion coefficient is (2.0x10{sup -7} cm{sup 2}/s)exp(-1.0 eV/kT) for nickel in copper, and (6x10{sup -8} cm{sup 2}/s)exp(-0.98 eV/kT) for copper in nickel. The difference between the diffusion parameters obtained in the present work and those extracted by other investigators is attributed essentially to the difference in the films microstructure and to the annealing ambient. It is concluded that interdiffusion in the investigated films is described by type-B kinetics in which rapid grain-boundary diffusion is coupled to defect-enhanced diffusion into the grain interior. The present data raise a question about the effectiveness of nickel as a diffusion barrier between copper and the silicon substrate.

Bilayered buccal films as child-appropriate dosage form for systemic administration of propranolol.

Science.gov (United States)

Abruzzo, Angela; Nicoletta, Fiore Pasquale; Dalena, Francesco; Cerchiara, Teresa; Luppi, Barbara; Bigucci, Federica

2017-10-05

Buccal mucosa has emerged as an attractive site for systemic administration of drug in paediatric patients. This route is simple and non-invasive, even if the saliva wash-out effect and the relative permeability of the mucosa can reduce drug absorption. Mucoadhesive polymers represent a common employed strategy to increase the contact time of the formulation at the application site and to improve drug absorption. Among the different mucoadhesive dosage forms, buccal films are particularly addressed for paediatric population since they are thin, adaptable to the mucosal surface and able to offer an exact and flexible dose. The objective of the present study was to develop bilayered buccal films for the release of propranolol hydrochloride. A primary polymeric layer was prepared by casting and drying of solutions of film-forming polymers, such as polyvinylpyrrolidone (PVP) or polyvinylalcohol (PVA), added with different weight ratios of gelatin (GEL) or chitosan (CH). In order to achieve unidirectional drug delivery towards buccal mucosa, a secondary ethylcellulose layer was applied onto the primary layer. Bilayered films were characterized for their physico-chemical (morphology, thickness, drug content and solid state) and functional (water uptake, mucoadhesion, drug release and permeation) properties. The inclusion of CH into PVP and PVA primary layer provided the best mucoadhesion ability. Films containing CH provided a lower drug release with respect to films containing GEL and increased the amount of permeated drug through buccal mucosa, thanks to its ability of interfering with the lipid organization. The secondary ethylcellulose layer did not interfere with drug permeation, but it could limit drug release in the buccal cavity. Copyright © 2017 Elsevier B.V. All rights reserved.

Diffusion barrier performance of novel Ti/TaN double layers for Cu metallization

International Nuclear Information System (INIS)

Zhou, Y.M.; He, M.Z.; Xie, Z.

2014-01-01

Highlights: • Novel Ti/TaN double layers offering good stability as a barrier against Cu metallization have been made achievable by annealing in vacuum. • The Ti/TaN double layers improved the adhesion with Cu thin films and showed good diffusion barrier between Cu and SiO 2 /Si up to the annealing condition. • The failure mechanism of Ti/TaN bi-layer is similar with the Cu/TaN/Si metallization system in which Cu atoms diffuse through the grain boundary of barrier and react with silicon to form Cu 3 Si. - Abstract: Novel Ti/TaN double layers offering good stability as a barrier against Cu metallization have been made achievable by annealing in vacuum better than 1 × 10 −3 Pa. Ti/TaN double layers were formed on SiO 2 /Si substrates by DC magnetron sputtering and then the properties of Cu/Ti/TaN/SiO 2 /Si film stacks were studied. It was found that the Ti/TaN double layers provide good diffusion barrier between Cu and SiO 2 /Si up to 750 °C for 30 min. The XRD, Auger and EDS results show that the Cu–Si compounds like Cu 3 Si were formed by Cu diffusion through Ti/TaN barrier for the 800 °C annealed samples. It seems that the improved diffusion barrier property of Cu/Ti/TaN/SiO 2 /Si stack is due to the diffusion of nitrogen along the grain boundaries in Ti layer, which would decrease the defects in Ti film and block the diffusion path for Cu diffusion with increasing annealing temperature. The failure mechanism of Ti/TaN bi-layer is similar to the Cu/TaN/Si metallization system in which Cu atoms diffuse through the grain boundary of barrier and react with silicon to form Cu 3 Si