Anomalous precipitation hardening in Al-(1 wt%)Cu thin films

NARCIS (Netherlands)

Bergers, L. J. C.; De Hosson, J. Th. M.; Geers, M. G. D.; Hoefnagels, J. P. M.

2018-01-01

This paper concentrates on the precipitation hardening of Al-(1 wt%)Cu thin films. It is shown that in contrast to bulk, the well-known approach of precipitation hardening in confined systems like thin layers and thin films does not operate in the conventional way. This work analyses and discusses

Preparation and properties of KCl-doped Cu2O thin film by electrodeposition

International Nuclear Information System (INIS)

Yu, Xiaojiao; Li, Xinming; Zheng, Gang; Wei, Yuchen; Zhang, Ama; Yao, Binghua

2013-01-01

With the indium tin oxide-coated glass as working electrode, cuprous oxide thin film is fabricated by means of electrodeposition. The effects of KCl doped and annealing treatment upon Cu 2 O thin film morphology, surface resistivity, open-circuit voltage, electric conduction types and visible light response are studied. The research results indicate that KCl doped has a great effect upon Cu 2 O crystal morphology, thus, making Cu 2 O thin film surface resistivity drop, and the open-circuit voltage increase and that electric conduction types are transformed from p type into n type, and the visible light (400–500 nm) absorption rate is slightly reduced. Annealing treatment can obviously decrease Cu 2 O thin film surface resistivity and improve its open-circuit voltage. When KCl concentration in electrolytic solution reaches 7 mmol/L, Cu 2 O thin film morphology can be changed from the dendritic crystal into the cubic crystal and Cu 2 O thin film surface resistivity decreases from the initial 2.5 × 10 6 Ω cm to 8.5 × 10 4 Ω cm. After annealing treatment at 320 °C for 30 min, the surface resistivity decreases to 8.5 × 10 2 Ω cm, and the open-circuit voltage increases from the initial 3.1 mV to 79.2 mV.

Thermally stimulated nonlinear refraction in gelatin stabilized Cu-PVP nanocomposite thin films

Energy Technology Data Exchange (ETDEWEB)

Tamgadge, Y. S., E-mail: ystamgadge@gmail.com; Atkare, D. V. [Department of Physics, Mahatma Fule Arts, Commerce & SitaramjiChoudhari Science College, Warud, Dist. Amravati (MS), India-444906 (India); Pahurkar, V. G.; Muley, G. G., E-mail: gajananggm@yahoo.co.in [Department of Physics, SantGadge Baba Amravati University, Amravati (MS), India-444602 (India); Talwatkar, S. S. [Department of Physics, D K Marathe and N G Acharya College, Chembur, Mumbai (MS), India-440071 (India); Sunatkari, A. L. [Department of Physics, Siddharth College of Arts, Science and Commerce, Fort, Mumbai (MS), India-440001 (India)

2016-05-06

This article illustrates investigations on thermally stimulated third order nonlinear refraction of Cu-PVP nanocomposite thin films. Cu nanoparticles have been synthesized using chemical reduction method and thin films in PVP matrix have been obtained using spin coating technique. Thin films have been characterized by X-ray diffraction (XRD) and Ultraviolet-visible (UV-vis) spectroscopyfor structural and linear optical studies. Third order nonlinear refraction studies have been performed using closed aperture z-scan technique under continuous wave (CW) He-Ne laser. Cu-PVP nanocomposites are found to exhibit strong nonlinear refractive index stimulated by thermal lensing effect.

Influences of annealing temperature on sprayed CuFeO2 thin films

Science.gov (United States)

Abdelwahab, H. M.; Ratep, A.; Abo Elsoud, A. M.; Boshta, M.; Osman, M. B. S.

2018-06-01

Delafossite CuFeO2 thin films were successfully prepared onto quartz substrates using simple spray pyrolysis technique. Post annealing under nitrogen atmosphere for 2 h was necessary to form delafossite CuFeO2 phase. The effect of alteration in annealing temperature (TA) 800, 850 and 900 °C was study on structural, morphology and optical properties. The XRD results for thin film annealed at TA = 850 °C show single phase CuFeO2 with rhombohedral crystal system and R 3 bar m space group with preferred orientation along (0 1 2). The prepared copper iron oxide thin films have an optical transmission ranged ∼40% in the visible region. The optical direct optical band gap of the prepared thin films was ranged ∼2.9 eV.

Semiconductor thin films directly from minerals—study of structural, optical, and transport characteristics of Cu2O thin films from malachite mineral and synthetic CuO

International Nuclear Information System (INIS)

Balasubramaniam, K.R.; Kao, V.M.; Ravichandran, J.; Rossen, P.B.; Siemons, W.; Ager, J.W.

2012-01-01

We demonstrate the proof-of-concept of using an abundantly occurring natural ore, malachite (Cu 2 CO 3 (OH) 2 ) to directly yield the semiconductor Cu 2 O to be used as an active component of a functional thin film based device. Cu 2 O is an archetype hole-conducting semiconductor that possesses several interesting characteristics particularly useful for solar cell applications, including low cost, non-toxicity, good hole mobility, large minority carrier diffusion length, and a direct energy gap ideal for efficient absorption. In this article, we compare the structural, optical, and electrical transport characteristics of Cu 2 O thin films grown from the natural mineral malachite and synthetic CuO targets. Growth from either source material results in single-phase, fully epitaxial cuprous oxide thin films as determined by x-ray diffraction. The films grown from malachite have strong absorption coefficients ( 10 4 cm −1 ), a direct allowed optical bandgap ( 2.4 eV), and majority carrier hole mobilities ( 35 cm 2 V −1 s −1 at room temperature) that compare well with films grown from the synthetic target as well as with previously reported values. Our work demonstrates that minerals could be useful to directly yield the active components in functional devices and suggests a route for the exploration of low cost energy conversion and storage technologies. - Highlights: ► Semiconductor thin films directly from minerals ► Chemistry and structure evolution of the films obtained from mineral target is very similar to that films obtained from high-purity synthetic targets. ► Quite interestingly, transport and optical characteristics are also found to be similar.

Cathodic electrodeposition of CuInSe sub 2 thin films

Energy Technology Data Exchange (ETDEWEB)

Guillen, C; Galiano, E; Herrero, J [Inst. de Energias Renovables (CIEMAT), Madrid (Spain)

1991-01-01

In order to study the preparation process of CuInSe{sub 2} thin films by a one-step electrodeposition method, thin films of the compound were prepared from aqueous citric acid (C{sub 6}H{sub 8}O{sub 7} . H{sub 2}O) plating baths onto titanium substrates. During electrodeposition, the bath composition and deposition potential were changed to obtain stoichiometric thin films. In general, close to stoichiometry, layers rich in selenium were observed, and this excess of selenium was removed after heat treatment. Best quality films were obtained after annealing at 400deg C during 15 min. X-ray diffraction showed the formation of CuInSe{sub 2} films, the chalcopyrite structure, at heating treatment temperatures higher than 350deg C. Optical measurements showed that the band gap of the deposited material was 0.99 eV. (orig.).

Room temperature chemical synthesis of Cu(OH)2 thin films for supercapacitor application

International Nuclear Information System (INIS)

Gurav, K.V.; Patil, U.M.; Shin, S.W.; Agawane, G.L.; Suryawanshi, M.P.; Pawar, S.M.; Patil, P.S.; Lokhande, C.D.; Kim, J.H.

2013-01-01

Highlights: •Cu(OH) 2 is presented as the new supercapacitive material. •The novel room temperature method used for the synthesis of Cu(OH) 2 . •The hydrous, nanograined Cu(OH) 2 shows higher specific capacitance of 120 F/g. -- Abstract: Room temperature soft chemical synthesis route is used to grow nanograined copper hydroxide [Cu(OH) 2 ] thin films on glass and stainless steel substrates. The structural, morphological, optical and wettability properties of Cu(OH) 2 thin films are studied by means of X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), field emission scanning electron microscopy (FESEM), UV–vis spectrophotometer and water contact angle measurement techniques. The results showed that, room temperature chemical synthesis route allows to form the nanograined and hydrophilic Cu(OH) 2 thin films with optical band gap energy of 3.0 eV. The electrochemical properties of Cu(OH) 2 thin films are studied in an aqueous 1 M NaOH electrolyte using cyclic voltammetry. The sample exhibited supercapacitive behavior with 120 F/g specific capacitance

RF magnetron sputtered TiNiCu shape memory alloy thin film

International Nuclear Information System (INIS)

Fu Yongqing; Du Hejun

2003-01-01

Shape memory alloys (SMAs) offer a unique combination of novel properties, such as shape memory effect, super-elasticity, biocompatibility and high damping capacity, and thin film SMAs have the potential to become a primary actuating mechanism for micro-actuators. In this study, TiNiCu films were successfully prepared by mix sputtering of a Ti 55 Ni 45 target with a separated Cu target. Crystalline structure, residual stress and phase transformation properties of the TiNiCu films were investigated using X-ray diffraction (XRD), differential scanning calorimeter (DSC), and curvature measurement methods. Effects of the processing parameters on the film composition, phase transformation and shape-memory effects were analyzed. Results showed that films prepared at a high Ar gas pressure exhibited a columnar structure, while films deposited at a low Ar gas pressure showed smooth and featureless structure. Chemical composition of TiNiCu thin films was dependent on the DC power of copper target. DSC, XRD and curvature measurement revealed clearly the martensitic transformation of the deposited TiNiCu films. When the free-standing film was heated and cooled, a 'two-way' shape-memory effect can be clearly observed

Composition-dependent nanostructure of Cu(In,Ga)Se{sub 2} powders and thin films

Energy Technology Data Exchange (ETDEWEB)

Schnohr, C.S., E-mail: c.schnohr@uni-jena.de [Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, 07743 Jena (Germany); Kämmer, H.; Steinbach, T.; Gnauck, M. [Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, 07743 Jena (Germany); Rissom, T.; Kaufmann, C.A.; Stephan, C. [Helmholtz-Zentrum Berlin für Materialien und Energie, Hahn-Meitner-Platz 1, 14109 Berlin (Germany); Schorr, S. [Helmholtz-Zentrum Berlin für Materialien und Energie, Hahn-Meitner-Platz 1, 14109 Berlin (Germany); Institut für Geologische Wissenschaften, Freie Universität Berlin, Malteserstr. 74-100, 12249 Berlin (Germany)

2015-05-01

Atomic-scale structural parameters of Cu(In,Ga)Se{sub 2} powders and polycrystalline thin films were determined as a function of the In and Cu contents using X-ray absorption spectroscopy. No difference in the two sample types is observed for the average bond lengths demonstrating the strong tendency towards bond length conservation typical for tetrahedrally coordinated semiconductors. In contrast, the bond length variation is significantly smaller in the thin films than in the powders, particularly for Cu-poor material. This difference in the nanostructure is proposed to originate from differences in the preparation conditions, most prominently from the different history of Cu composition. - Highlights: • Cu(In,Ga)Se{sub 2} powders and thin films are studied with X-ray absorption spectroscopy. • Structural parameters are determined as a function of the In and Cu contents. • The element-specific average bond lengths are identical for powders and thin films. • The Ga-Se/In-Se bond length variation is smaller for thin films than for powders. • The differences are believed to stem from the different history of the Cu content.

Progress in Polycrystalline Thin-Film Cu(In,GaSe2 Solar Cells

Directory of Open Access Journals (Sweden)

Udai P. Singh

2010-01-01

Full Text Available For some time, the chalcopyrite semiconductor CuInSe2 and its alloy with Ga and/or S [Cu(InGaSe2 or Cu(InGa(Se,S2], commonly referred as CIGS, have been leading thin-film material candidates for incorporation in high-efficiency photovoltaic devices. CuInSe2-based solar cells have shown long-term stability and the highest conversion efficiencies among all thin-film solar cells, reaching 20%. A variety of methods have been reported to prepare CIGS thin film. Efficiency of solar cells depends upon the various deposition methods as they control optoelectronic properties of the layers and interfaces. CIGS thin film grown on glass or flexible (metal foil, polyimide substrates require p-type absorber layers of optimum optoelectronic properties and n-type wideband gap partner layers to form the p-n junction. Transparent conducting oxide and specific metal layers are used for front and back contacts. Progress made in the field of CIGS solar cell in recent years has been reviewed.

Preparation and properties of KCl-doped Cu{sub 2}O thin film by electrodeposition

Energy Technology Data Exchange (ETDEWEB)

Yu, Xiaojiao, E-mail: yxjw@xaut.edu.cn [Xi’an University of Technology, Xi’an 710048 (China); Li, Xinming [Xi’an University of Technology, Xi’an 710048 (China); Zheng, Gang [Xi’an University of Technology, Xi’an 710048 (China); Northwestern Polytechnical University, Xi’an 710072 (China); Wei, Yuchen [The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong (China); Zhang, Ama; Yao, Binghua [Xi’an University of Technology, Xi’an 710048 (China)

2013-04-01

With the indium tin oxide-coated glass as working electrode, cuprous oxide thin film is fabricated by means of electrodeposition. The effects of KCl doped and annealing treatment upon Cu{sub 2}O thin film morphology, surface resistivity, open-circuit voltage, electric conduction types and visible light response are studied. The research results indicate that KCl doped has a great effect upon Cu{sub 2}O crystal morphology, thus, making Cu{sub 2}O thin film surface resistivity drop, and the open-circuit voltage increase and that electric conduction types are transformed from p type into n type, and the visible light (400–500 nm) absorption rate is slightly reduced. Annealing treatment can obviously decrease Cu{sub 2}O thin film surface resistivity and improve its open-circuit voltage. When KCl concentration in electrolytic solution reaches 7 mmol/L, Cu{sub 2}O thin film morphology can be changed from the dendritic crystal into the cubic crystal and Cu{sub 2}O thin film surface resistivity decreases from the initial 2.5 × 10{sup 6} Ω cm to 8.5 × 10{sup 4} Ω cm. After annealing treatment at 320 °C for 30 min, the surface resistivity decreases to 8.5 × 10{sup 2} Ω cm, and the open-circuit voltage increases from the initial 3.1 mV to 79.2 mV.

Studies on nonlocal optical nonlinearity of Sr–CuO–polyvinyl alcohol nanocomposite thin films

International Nuclear Information System (INIS)

Tamgadge, Y.S.; Talwatkar, S.S.; Sunatkari, A.L.; Pahurkar, V.G.; Muley, G.G.

2015-01-01

Thermally induced nonlocal nonlinear optical properties of strontium (Sr) doped CuO-polyvinyl alcohol (PVA) nanocomposite thin films under continuous wave Helium–Neon laser illumination are investigated by single beam Z-scan method. Undoped and Sr doped CuO nanoparticles (NPs) using L-arginine as surface modifying agent have been synthesized by wet chemical method and their thin films with PVA as host matrix have been obtained by spin coating technique. Structure, morphology and purity of prepared CuO NPs and thin films have been studied by X-ray diffraction, high-resolution transmission electron microscopy, field emission scanning electron microscopy and energy dispersive X-ray absorption spectroscopy. Fourier transform infra-red spectrum attests the role of L-arginine as surface modifier and ultraviolet–visible absorption studies reveal that the excitonic absorption wavelengths are blue shifted for strontium doped CuO NPs. Sr doped CuO NPs with average particle size of 7 nm and calculated optical band gap up to 2.54 eV have been reported. All Sr doped CuO–PVA nanocomposite thin films show enhanced nonlinear refraction and absorption best suited for optical limiting applications. Observed effects have been attributed to thermal lensing effect. - Highlights: • Pure and strontium doped CuO–polyvinyl alcohol nanocomposite thin films are prepared. • Z-scan studies of thin films are performed under continuous wave helium–neon laser. • Enhanced values of third order nonlinear optical coefficients are obtained for all films. • Thermally induced self-defocusing and reverse saturable absorption have been discussed.

Studies on nonlocal optical nonlinearity of Sr–CuO–polyvinyl alcohol nanocomposite thin films

Energy Technology Data Exchange (ETDEWEB)

Tamgadge, Y.S. [Department of Physics, Mahatma Fule Arts, Commerce and S C Science Mahavidyalaya, Warud, Dist. Amravati (MS), 444906 (India); Talwatkar, S.S. [Department of Physics, D K Marathe and N G Acharya College, Chembur, Mumbai (MS) 440071 (India); Sunatkari, A.L. [Department of Physics, Siddharth College of Arts, Science and Commerce, Fort, Mumbai (MS) 440001 (India); Pahurkar, V.G. [Department of Physics, Sant Gadge Baba Amravati University, Amravati (MS), 444602 (India); Muley, G.G., E-mail: gajananggm@yahoo.co.in [Department of Physics, Sant Gadge Baba Amravati University, Amravati (MS), 444602 (India)

2015-11-30

Thermally induced nonlocal nonlinear optical properties of strontium (Sr) doped CuO-polyvinyl alcohol (PVA) nanocomposite thin films under continuous wave Helium–Neon laser illumination are investigated by single beam Z-scan method. Undoped and Sr doped CuO nanoparticles (NPs) using L-arginine as surface modifying agent have been synthesized by wet chemical method and their thin films with PVA as host matrix have been obtained by spin coating technique. Structure, morphology and purity of prepared CuO NPs and thin films have been studied by X-ray diffraction, high-resolution transmission electron microscopy, field emission scanning electron microscopy and energy dispersive X-ray absorption spectroscopy. Fourier transform infra-red spectrum attests the role of L-arginine as surface modifier and ultraviolet–visible absorption studies reveal that the excitonic absorption wavelengths are blue shifted for strontium doped CuO NPs. Sr doped CuO NPs with average particle size of 7 nm and calculated optical band gap up to 2.54 eV have been reported. All Sr doped CuO–PVA nanocomposite thin films show enhanced nonlinear refraction and absorption best suited for optical limiting applications. Observed effects have been attributed to thermal lensing effect. - Highlights: • Pure and strontium doped CuO–polyvinyl alcohol nanocomposite thin films are prepared. • Z-scan studies of thin films are performed under continuous wave helium–neon laser. • Enhanced values of third order nonlinear optical coefficients are obtained for all films. • Thermally induced self-defocusing and reverse saturable absorption have been discussed.

Preparation of Cu{sub 2}ZnSnS{sub 4} thin films by sulfurizing stacked precursor thin films via successive ionic layer adsorption and reaction method

Energy Technology Data Exchange (ETDEWEB)

Su Zhenghua; Yan Chang; Sun Kaiwen; Han Zili [School of Metallurgical Science and Engineering, Central South University, Changsha 410083 (China); Liu Fangyang, E-mail: liufangyang@csu.edu.cn [School of Metallurgical Science and Engineering, Central South University, Changsha 410083 (China); Liu Jin [School of Metallurgical Science and Engineering, Central South University, Changsha 410083 (China); Lai Yanqing, E-mail: laiyanqingcsu@163.com [School of Metallurgical Science and Engineering, Central South University, Changsha 410083 (China); Li Jie; Liu Yexiang [School of Metallurgical Science and Engineering, Central South University, Changsha 410083 (China)

2012-07-15

Earth-abundant Cu{sub 2}ZnSnS{sub 4} is a promising alternative photovoltaic material which has been examined as absorber layer of thin film solar cells. In this study, Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films have been successfully fabricated by sulfurizing stacked precursor thin films via successive ionic layer adsorption and reaction (SILAR) method. The prepared CZTS thin films have been characterized by X-ray diffraction, energy dispersive spectrometer, Raman spectroscopy, UV-vis spectroscopy, Hall effect measurements and photoelectrochemical tests. Results reveal that the thin films have kesterite structured Cu{sub 2}ZnSnS{sub 4} and the p-type conductivity with a carrier concentration in the order of 10{sup 18} cm{sup -3} and an optical band gap of 1.5 eV, which are suitable for applications in thin film solar cells.

Room temperature chemical synthesis of Cu(OH){sub 2} thin films for supercapacitor application

Energy Technology Data Exchange (ETDEWEB)

Gurav, K.V. [Thin Film Photonic and Electronics Lab, Department of Materials Science and Engineering, Chonnam National University, 300 Yongbong-dong, Puk-Gu, Gwangju 500-757 (Korea, Republic of); Patil, U.M. [Thin Film Physics Laboratory, Department of Physics, Shivaji University, Kolhapur 416 007 (M.S.) (India); Shin, S.W.; Agawane, G.L.; Suryawanshi, M.P.; Pawar, S.M.; Patil, P.S. [Thin Film Photonic and Electronics Lab, Department of Materials Science and Engineering, Chonnam National University, 300 Yongbong-dong, Puk-Gu, Gwangju 500-757 (Korea, Republic of); Lokhande, C.D. [Thin Film Physics Laboratory, Department of Physics, Shivaji University, Kolhapur 416 007 (M.S.) (India); Kim, J.H., E-mail: jinhyeok@chonnam.ac.kr [Thin Film Photonic and Electronics Lab, Department of Materials Science and Engineering, Chonnam National University, 300 Yongbong-dong, Puk-Gu, Gwangju 500-757 (Korea, Republic of)

2013-10-05

Highlights: •Cu(OH){sub 2} is presented as the new supercapacitive material. •The novel room temperature method used for the synthesis of Cu(OH){sub 2}. •The hydrous, nanograined Cu(OH){sub 2} shows higher specific capacitance of 120 F/g. -- Abstract: Room temperature soft chemical synthesis route is used to grow nanograined copper hydroxide [Cu(OH){sub 2}] thin films on glass and stainless steel substrates. The structural, morphological, optical and wettability properties of Cu(OH){sub 2} thin films are studied by means of X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), field emission scanning electron microscopy (FESEM), UV–vis spectrophotometer and water contact angle measurement techniques. The results showed that, room temperature chemical synthesis route allows to form the nanograined and hydrophilic Cu(OH){sub 2} thin films with optical band gap energy of 3.0 eV. The electrochemical properties of Cu(OH){sub 2} thin films are studied in an aqueous 1 M NaOH electrolyte using cyclic voltammetry. The sample exhibited supercapacitive behavior with 120 F/g specific capacitance.

Compositionally graded SiCu thin film anode by magnetron sputtering for lithium ion battery

Energy Technology Data Exchange (ETDEWEB)

Polat, B.D., E-mail: bpolat@itu.edu.tr [Department of Metallurgical and Materials Engineering, Istanbul Technical University, Maslak, Istanbul 34469 (Turkey); Eryilmaz, O.L. [Energy Systems Division, Argonne National Laboratory, Argonne, IL 60439 (United States); Keleş, O., E-mail: ozgulkeles@itu.edu.tr [Department of Metallurgical and Materials Engineering, Istanbul Technical University, Maslak, Istanbul 34469 (Turkey); Erdemir, A. [Energy Systems Division, Argonne National Laboratory, Argonne, IL 60439 (United States); Amine, K. [Chemical Sciences and Engineering Division, Argonne National Laboratory, Argonne, IL 60439 (United States)

2015-12-01

Compositionally graded and non-graded composite SiCu thin films were deposited by magnetron sputtering technique on Cu disks for investigation of their potentials in lithium ion battery applications. The compositionally graded thin film electrodes with 30 at.% Cu delivered a 1400 mAh g{sup −1} capacity with 80% Coulombic efficiency in the first cycle and still retained its capacity at around 600 mAh g{sup −1} (with 99.9% Coulombic efficiency) even after 100 cycles. On the other hand, the non-graded thin film electrodes with 30 at.% Cu exhibited 1100 mAh g{sup −1} as the first discharge capacity with 78% Coulombic efficiency but the cycle life of this film degraded very quickly, delivering only 250 mAh g{sup −1} capacity after 100th cycles. Not only the Cu content but also the graded film thickness were believed to be the main contributors to the much superior performance of the compositionally graded SiCu films. We also believe that the Cu-rich region of the graded film helped reduce internal stress build-up and thus prevented film delamination during cycling. In particular, the decrease of Cu content from interface region to the top of the coating reduced the possibility of stress build-up across the film during cycling, thus leading to a high electrochemical performance.b - Highlights: • Highly adherent SiCu films are deposited by magnetron sputtering. • Compositionally graded SiCu film is produced and characterized. • Decrease of Cu content diverted the propagation of stress in the anode. • Cu rich layer at the bottom improves the adherence of the film.

The Cu2ZnSnSe4 thin films solar cells synthesized by electrodeposition route

Science.gov (United States)

Li, Ji; Ma, Tuteng; Wei, Ming; Liu, Weifeng; Jiang, Guoshun; Zhu, Changfei

2012-06-01

An electrodeposition route for preparing Cu2ZnSnSe4 thin films for thin film solar cell absorber layers is demonstrated. The Cu2ZnSnSe4 thin films are prepared by co-electrodeposition Cu-Zn-Sn metallic precursor and subsequently annealing in element selenium atmosphere. The structure, composition and optical properties of the films were investigated by X-ray diffraction (XRD), Raman spectrometry, energy dispersive spectrometry (EDS) and UV-VIS absorption spectroscopy. The Cu2ZnSnSe4 thin film with high crystalline quality was obtained, the band gap and absorption coefficient were 1.0 eV and 10-4 cm-1, which is quite suitable for solar cells fabrication. A solar cell with the structure of ZnO:Al/i-ZnO/CdS/Cu2ZnSnSe4/Mo/glass was fabricated and achieved an conversion efficiency of 1.7%.

Preparation of biaxially oriented TlCu-1234 thin films

CERN Document Server

Khan, N A; Tateai, F; Kojima, T; Ishida, K; Terada, N; Ihara, H

1999-01-01

The single phase of TlCu-1234 superconductor thin films is prepared for the first time by the amorphous phase epitaxy (APE) method, which is thallium treatment of sputtered amorphous phase at 900 degrees C for 1 h. The amorphous $9 phase is prepared by sputtering from the stoichiometric target composition CuBa/sub 2/Ca/sub 3/Cu/sub 4/O/sub 12-y/. The films on the SrTiO/sub 3/ substrate are aligned biaxially after the thallium treatment. Highly reproducible $9 TlCu-1234 films are prepared by this method. The XRD reflected a predominant single phase with the c-axis lattice constant of 18.74 AA. This lattice constant value is in between that of Cu-1234 (17.99 AA) and Tl-1234 (19.11 AA) . The $9 pole figure measurements of (103) reflection of the films showed a-axis-oriented crystals with Delta phi =0.8 degrees . The composition of the films after energy dispersive X-ray (EDX) measurements is Tl/sub 0.8/Cu/sub 0.2/Ba/sub $9 2/Ca/sub 3/Cu/sub 4/O /sub 12-y/. From the resistivity measurements, the T/sub c/ is 113 K...

Micro-Raman spectroscopy studies of bulk and thin films of CuInTe2

International Nuclear Information System (INIS)

Ananthan, M R; Mohanty, Bhaskar Chandra; Kasiviswanathan, S

2009-01-01

Micro-Raman spectroscopy measurements were made on polycrystalline and amorphous thin films of CuInTe 2 as well as bulk polycrystalline CuInTe 2 . Various vibrational modes exhibited by the bulk and polycrystalline thin films were attributed to those expected for single crystal CuInTe 2 . Raman spectra of amorphous films presented a broad spectrum, decomposition of which revealed the presence of elemental tellurium on the film surface. Laser-induced changes on CuInTe 2 thin films were studied by acquiring spectra with higher laser beam power. Modes due to tellurium appeared when the spectra were acquired during laser–sample interaction, indicating tellurium segregation. The Raman spectra measured from polycrystalline films during high laser power irradiation did not show decrease in the intensity of the A 1 mode of CuInTe 2 in spite of loss of tellurium from the lattice. This has been interpreted as related to an increased contribution from the undistorted subsurface CuInTe 2 region at higher excitation power

Pulsed laser deposition of Cu-Sn-S for thin film solar cells

DEFF Research Database (Denmark)

Ettlinger, Rebecca Bolt; Crovetto, Andrea; Bosco, Edoardo

Thin films of copper tin sulfide were deposited from a target of the stoichiometry Cu:Sn:S ~1:2:3 using pulsed laser deposition (PLD). Annealing with S powder resulted in films close to the desired Cu2SnS3 stoichiometry although the films remained Sn rich. Xray diffraction showed that the final...... films contained both cubic-phase Cu2SnS3 and orthorhombic-phase SnS...

Characterization of Cu(In,Ga)(S,Se)2 thin films prepared by sequential evaporation from ternary compounds

International Nuclear Information System (INIS)

Yamaguchi, T.; Hatori, M.; Niiyama, S.; Miyake, Y.

2006-01-01

Cu(In,Ga)(S,Se) 2 thin films were fabricated by sequential evaporation from CuGaSe 2 , CuInSe 2 and In 2 S 3 compounds for photovoltaic device applications. From XRF analysis, the Cu:(In+Ga):(S+Se) atomic ratio in all thin films was approximately 1:1:2. As the [In 2 S 3 ]/([CuGaSe 2 ]+[CuInSe 2 ]) mole ratio in the evaporating materials increased, the S/(S+Se) atomic ratio in the thin films increased from 0 to 0.16 determined by XRF and to 0.43 by EPMA. XRD studies demonstrated that the prepared thin films had a chalcopyrite Cu(In,Ga) (S,Se) 2 structure and the preferred orientation to the 112 plane. The SEM images demonstrated that Cu(In,Ga)(S,Se) 2 thin films had large and columnar grains. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (Abstract Copyright [2006], Wiley Periodicals, Inc.)

Superconducting thin films of YBa2Cu3O7-x

International Nuclear Information System (INIS)

Hudner, J.

1993-01-01

Thin films of the high temperature superconductor YBa 2 Cu 3 O 7-x (YBCO) are of significance in fundamental studies of oxide superconductors and for prospected electronic applications based on superconductors operating at liquid nitrogen temperatures (T= 77 K). Synthesis of YBCO thin films is complex and a large part of this thesis has been devoted to the elaboration of various techniques in forming YBCO thin films. A general observation was that synthesis of YBCO films exhibiting high zero-resistivity temperatures temperatures (T c ) ≥ 88 K and elevated critical current densities (J c ) ≥ 10 6 A/cm 2 at 77 K was possible under widely different conditions of film growth. For the BaF 2 -based method, various substrate materials were investigated. Among perovskite related substrates with low losses in the high frequency regime, LaA10 3 was found to yield YBCO films exhibiting the highest quality electrical properties. A study of YBCO film interaction with sapphire substrates was performed. It was suggested that the YBCO film on sapphire consists of weakly coupled superconducting grains. Compositional effects of Y, BA and Cu for MOCVD-YBCO films were examined with respect to morphology, structure, resistivity, as susceptibility and J c (T). High T c :s and J c :s were observed for an anomalous large compositional range of Cu in off-compositional YBCO films. This was shown to be related to the formation of Cu-rich precipitates embedded within a c-Axis oriented stoichiometric YBCO film matrix. Thermal critical current behavior at zero field in thin films of YBCO fabricated by various methods has been studied by three techniques: transport measurements on patterned microbridges, dc magnetization hysteresis loops using the Bean model and non-linear ac susceptibility analysis. Absolute critical current values obtained form the two former techniques when measured on the same YBCO film were observed to differ about a factor of two. The feasibility of non-linear ac

n-Type Conductivity of Cu2O Thin Film Prepared in Basic Aqueous Solution Under Hydrothermal Conditions

Science.gov (United States)

Ursu, Daniel; Miclau, Nicolae; Miclau, Marinela

2018-03-01

We report for the first time in situ hydrothermal synthesis of n-type Cu2O thin film using strong alkaline solution. The use of copper foil as substrate and precursor material, low synthesis temperature and short reaction time represent the arguments of a new, simple, inexpensive and high field synthesis method for the preparation of n-type Cu2O thin film. The donor concentration of n-type Cu2O thin film obtained at 2 h of reaction time has increased two orders of magnitude than previous reported values. We have demonstrated n-type conduction in Cu2O thin film prepared in strong alkaline solution, in the contradiction with the previous works. Based on experimental results, the synthesis mechanism and the origin of n-type photo-responsive behavior of Cu2O thin film were discussed. We have proposed that the unexpected n-type character could be explained by H doping of Cu2O thin film in during of the hydrothermal synthesis that caused the p-to-n conductivity-type conversion. Also, this work raises new questions about the origin of n-type conduction in Cu2O thin film, the influence of the synthesis method on the nature of the intrinsic defects and the electrical conduction behavior.

Chemical solution deposition of CaCu3Ti4O12 thin film

Indian Academy of Sciences (India)

Administrator

CaCu3Ti4O12; thin film; chemical solution deposition; dielectric properties. 1. Introduction. The CaCu3Ti4O12. (CCTO) compound has recently attracted considerable ... and Kelvin probe force microscopy (Chung et al 2004). Intrinsic .... SEM images of CCTO thin films as a function of sintering temperature. silicon based ...

FABRICATION OF Cu-Al-Ni SHAPE MEMORY THIN FILM BY THERMAL EVOPRATION

OpenAIRE

Özkul, İskender; Canbay, Canan Aksu; Tekataş, Ayşe

2017-01-01

Among the functional, materials shape memory alloysare important because of their unique properties. So, these materials haveattracted more attention to be used in micro/nano electronic andelectromechanic systems. In this work, thermal evaporation method has been usedto produce CuAlNi shape memory alloy thin film. The produced CuAlNi thin filmhas been characterized and the presence of the martensite phase wasinvestigated and compared with the CuAlNi alloy sample. CuAlNi shape memoryalloy thin...

Optoelectronic properties of transparent p-type semiconductor Cu{sub x}S thin films

Energy Technology Data Exchange (ETDEWEB)

Parreira, P.; Valente, J. [ICEMS, IST-UTL, Lisboa (Portugal); Lavareda, G. [Departamento de Fisica, IST-UTL, Lisboa (Portugal); Nunes, F.T. [Departamento de Ciencia dos Materiais, FCT-UNL, Caparica (Portugal); Amaral, A. [Departamento de Fisica, IST-UTL, Lisboa (Portugal); ICEMS, IST-UTL, Lisboa (Portugal); Carvalho, C.N. de [Departamento de Ciencia dos Materiais, FCT-UNL, Caparica (Portugal); ICEMS, IST-UTL, Lisboa (Portugal)

2010-07-15

Nowadays, among the available transparent semiconductors for device use, the great majority (if not all) have n-type conductivity. The fabrication of a transparent p-type semiconductor with good optoelectronic properties (comparable to those of n-type: InO{sub x}, ITO, ZnO{sub x} or FTO) would significantly broaden the application field of thin films. However, until now no material has yet presented all the required properties. Cu{sub 2}S is a p-type narrow-band-gap material with an average optical transmittance of about 60% in the visible range for 50 nm thick films. However, due to its high conductivity at room temperature, 10 nm in thickness seems to be appropriate for device use. Cu{sub 2}S thin films with 10 nm in thickness have an optical visible transmittance of about 85% rendering them as very good candidates for transparent p-type semiconductors. In this work Cu{sub x}S thin films were deposited on alkali-free (AF) glass by thermal evaporation. The objective was not only the determination of its optoelectronic properties but also the feasibility of an active layer in a p-type thin film transistor. In our Cu{sub x}S thin films, p-type high conductivity with a total visible transmittance of about 50% have been achieved. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

Effect of oxygen on the surface morphology of CuGaS{sub 2} thin films

Energy Technology Data Exchange (ETDEWEB)

Smaili, F., E-mail: fethi.smaili@voila.fr [Laboratoire de Photovoltaique et Materiaux Semi-conducteurs -ENIT BP 37, Le belvedere 1002-Tunis (Tunisia); Kanzari, M. [Laboratoire de Photovoltaique et Materiaux Semi-conducteurs -ENIT BP 37, Le belvedere 1002-Tunis (Tunisia)

2009-08-01

Since the effect of oxygen is very significant during the heat treatment of the thin films, we study the effect of this during the annealing of CuGaS{sub 2} thin films by two different types. In this study, CuGaS{sub 2} thin films were deposited by vacuum thermal evaporation of CuGaS{sub 2} powder on heated glass substrates at 200 deg. C submitted to a thermal gradient. The films are annealed in air and under nitrogen atmosphere at 400 deg. C for 2 h. In order to improve our understanding of the influence of oxygen during two annealing types on device performance, we have investigated our CuGaS{sub 2} material by X-ray diffraction, scanning electron microscopy (SEM), atomic force microscopy (AFM), energy dispersive X-ray analysis (EDX) and spectrophotometry. A correlation was established between the surface roughness, growth morphology and optical properties, of the annealed CuGaS{sub 2} thin films. It was found that annealing of CuGaS{sub 2} film in nitrogen atmosphere leads to a decrease of the mean grain size and to an evolution of a (112) preferred film orientation. Annealing in air results in the growth of oxide phases such as CuO and modifies the films structure and their surface morphology.

Cu2SixSn1-xS3 Thin Films Prepared by Reactive Magnetron Sputtering For Low-Cost Thin Film Solar Cells

Science.gov (United States)

Yan, Chang; Liu, Fang-Yang; Lai, Yan-Qing; Li, Jie; Liu, Ye-Xiang

2011-10-01

We report the preparation of Cu2SixSn1-xS3 thin films for thin film solar cell absorbers using the reactive magnetron co-sputtering technique. Energy dispersive spectrometer and x-ray diffraction analyses indicate that Cu2Si1-xSnxS3 thin films can be synthesized successfully by partly substituting Si atoms for Sn atoms in the Cu2SnS3 lattice, leading to a shrinkage of the lattice, and, accordingly, by 2θ shifting to larger values. The blue shift of the Raman peak further confirms the formation of Cu2SixSn1-xS3. Environmental scanning electron microscope analyses reveal a polycrystalline and homogeneous morphology with a grain size of about 200-300 nm. Optical measurements indicate an optical absorption coefficient of higher than 104 cm-1 and an optical bandgap of 1.17±0.01 eV.

Preliminary study of CdTe and CdTe:Cu thin films nanostructures deposited by using DC magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Marwoto, Putut; Made, D. P. Ngurah; Sugianto [Departement of Physics, Faculty of Mathematics and Natural Sciences, Universitas Negeri Semarang, Gunungpati, Semarang 50229 Jawa Tengah (Indonesia); Wibowo, Edy; Astuti, Santi Yuli; Aryani, Nila Prasetya [Materials Research Group, Laboratory of Thin Film, Department of Physics, Universitas Negeri Semarang, Gunungpati, Semarang 50229 Jawa Tengah (Indonesia); Othaman, Zulkafli [Departement of Physics, Universiti Teknologi Malaysia (UTM), Skudai, Johor Bahru (Malaysia)

2013-09-03

Growth and properties of CdTe and CdTe:Cu thin films nanostrucures deposited by using dc magnetron sputtering are reported. Scanning electron microscope (SEM) was used to observe the surface morphologies of the thin films. At growth conditions of 250 °C and 14 W, CdTe films did not yet evenly deposited. However, at growth temperature and plasma power of 325 °C and 43 W, both CdTe and CdTe:Cu(2%) have deposited on the substrates. In this condition, the morphology of the films indicate that the films have a grain-like nanostructures. Grain size diameter of about 200 nm begin to appear on top of the films. Energy Dispersive X-rays spectroscopy (EDX) was used to investigate chemical elements of the Cu doped CdTe film deposited. It was found that the film deposited consist of Cd, Te and Cu elements. XRD was used to investigate the full width at half maximum (FWHM) values of the thin films deposited. The results show that CdTe:Cu(2%) thin film has better crystallographic properties than CdTe thin film. The UV-Vis spectrometer was used to investigate the optical properties of thin films deposited. The transmittance spectra showed that transmittance of CdTe:Cu(2%) film is lower than CdTe film. It was found that the bandgap energy of CdTe and CdTe:Cu(2%) thin films of about 1.48 eV.

Effect of the Precursor Solution Concentration of CuI Thin Film Deposited By Spin Coating Method

International Nuclear Information System (INIS)

Nur Amalina Muhmmad; Atiq, A.M.; Rusop, M.

2011-01-01

Copper (I) Iodide is a p-type semiconductor with bandgap of 3.1 eV. It is water insoluble solid with three crystalline phases α, β, γ. In this research, the effect of precursor concentration of CuI thin film deposited by spin coating method was studied. The wide band gap p type semiconductor CuI thin film was prepared by mixing the CuI powder (ALDRICH, 98 %) with 50 ml of acetonitrile as a solvent. The CuI concentration varies from 0.025 M to 0.5 M. The speed for spin coating is 1000 rpm for 60 seconds. After the deposition the CuI thin films were annealed at 150 degree Celsius. The electrical and optical properties were characterized by current-voltage (I-V) measurement using Solar Simulator (Bukoh Keiki EP-2000) and ultraviolet visible- near infrared (UV-VIS-NIR) measurement (Jasco V-670). The result shows the CuI thin film properties strongly depends on its precursor concentration. Thickness between 33.65 nm - 441.25 nm was obtained as the concentration increases. The increment of thickness affects the electrical properties which is the resistivity and conductivity of CuI thin film. For optical properties, the transmittance decreases with high concentration as high amount of CuI particle were observed in the thin films. From the transmittance, the absorption coefficient and optical band gap of CuI was determined using Taucs plot. (author)

Fabrication, characterization and sensing properties of Cu(II) ion imprinted sol–gel thin film on QCM

International Nuclear Information System (INIS)

Su, Pi-Guey; Hung, Fang-Chieh; Lin, Po-Hung

2012-01-01

Cu(II)-molecularly imprinted sol–gel films (Cu(II)-MISGF), coated on a quartz crystal microbalance (QCM) chip, were fabricated using a sol–gel procedure. Co-hydrolysis and co-condensation of Cu(II) (templates), 3-aminopropyltrimethoxysilane (APTS, functional monomer) and tetraethoxysilane (TEOS, cross-linking agent) were performed with acid and base catalysis. The properties of the Cu(II)-MISGF were characterized by Fourier transform infrared spectroscopy (FTIR), scanning electron microscopy (SEM) and the electrochemical methods of cyclic voltammetry (CV). Microstructural observations revealed that the acid-catalyzed system yielded more mechanically stable thin films. A combined Cu(II)-MISGF-QCM with flow injection analysis (FIA) method was utilized to investigate the sensing performance of the Cu(II)-MISGF, with special emphasis on the most important properties of sensitivity, selectivity and response time. The Cu(II)-MISGF-QCM sensor, at a TEOS/APTS molar ratio of 10, exhibited excellent selectivity and rapidly responded to Cu(II) ions. - Highlights: ► A Cu(II)-molecularly imprinted sol–gel thin film on chip was fabricated. ► The thin film had mechanical stability using acidic catalyst. ► The thin film had good selectivity and response time for Cu(II) ions.

Fabrication and nano-imprintabilities of Zr-, Pd- and Cu-based glassy alloy thin films

International Nuclear Information System (INIS)

Takenaka, Kana; Saidoh, Noriko; Nishiyama, Nobuyuki; Inoue, Akihisa

2011-01-01

With the aim of investigating nano-imprintability of glassy alloys in a film form, Zr 49 Al 11 Ni 8 Cu 32 , Pd 39 Cu 29 Ni 13 P 19 and Cu 38 Zr 47 Al 9 Ag 6 glassy alloy thin films were fabricated on Si substrate by a magnetron sputtering method. These films exhibit a very smooth surface, a distinct glass transition phenomenon and a large supercooled liquid region of about 80 K, which are suitable for imprinting materials. Moreover, thermal nano-imprintability of these obtained films is demonstrated by using a dot array mold with a dot diameter of 90 nm. Surface observations revealed that periodic nano-hole arrays with a hole diameter of 90 nm were successfully imprinted on the surface of these films. Among them, Pd-based glassy alloy thin film indicated more precise pattern imprintability, namely, flatter residual surface plane and sharper hole edge. It is said that these glassy alloy thin films, especially Pd-based glassy alloy thin film, are one of the promising materials for fabricating micro-machines and nano-devices by thermal imprinting.

Stability of Tl-Ba-Ca-Cu-O Superconducting Thin Films

Energy Technology Data Exchange (ETDEWEB)

Siegal, M.P.; Overmyer, D.L.; Venturini, E.L.; Padilla, R.R.; Provencio, P.N.

1999-08-23

We report the stability of TlBa{sub 2}CaCu{sub 2}O{sub 7} (Tl-1212) and Tl{sub 2}Ba{sub 2}CaCu{sub 2}O{sub 8} (T1-2212) thin films and by inference, the stability of TlBa{sub 2}Ca{sub 2}Cu{sub 3}O{sub 9} (Tl-1223) and Tl{sub 2}Ba{sub 2}Ca{sub 2}Cu{sub 3}O{sub 10} (Tl-2223) thin films, under a variety of conditions. In general, we observe that the stability behavior of the single Tl-O layer materials (Tl-1212 and Tl-1223)are similar and the double Tl-O layer materials (Tl-2212 and Tl-2223) are similar. All films are stable with repeated thermal cycling to cryogenic temperatures. Films are also stable in acetone and methanol. Moisture degrades film quality rapidly, especially in the form of vapor. Tl-1212 is more sensitive to vapor than Tl-2212. These materials are stable to high temperatures in either N{sub 2}, similar to vacuum for the cuprates, and O{sub 2} ambients. While total degradation of properties (superconducting and structural) occur at the same temperatures for all phases, 600 C in N{sub 2} and 700 C in O{sub 2}, the onset of degradation occurs at somewhat lower temperatures for Tl-1212 than for Tl-2212 films. In all cases, sample degradation is associated with Tl depletion from the films.

Deposition of CuIn(Se,S)2 thin films by sulfurization of selenized Cu/In alloys

International Nuclear Information System (INIS)

Sheppard, C.J.; Alberts, V.; Bekker, W.J.

2004-01-01

The relatively small band gap values (close to 1eV) of CuInSe 2 thin films limits the conversion efficiencies of completed CuInSe 2 /CdS/ZnO solar cell devices. In the case of traditional two-stage growth techniques, limited success has been achieved to increase the band gap by substituting indium with gallium. In this study, sputtered copper-indium alloys were exposed to a H 2 Se/Ar atmosphere under defined conditions in order to produce partially reacted CuInSe 2 structures. These films were subsequently exposed to a H 2 S/Ar atmosphere to produce monophasic CuIn(Se, S) 2 quaternary alloys. The homogeneous incorporation of S into CuInSe 2 led to a systematic shift in the lattice parameters and band gap of the ab- sorber films. From these studies optimum selenization/sulfurization conditions were determined for the deposition of homogeneous CuIn(Se,S) 2 thin films with an optimum band gap values between 1.15 and 1.2 eV. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Optical properties of CuCdTeO thin films sputtered from CdTe-CuO composite targets

Energy Technology Data Exchange (ETDEWEB)

Mendoza-Galván, A., E-mail: amendoza@qro.cinvestav.mx [Cinvestav-IPN, Unidad Querétaro, Libramiento Norponiente 2000, 76230 Querétaro (Mexico); Laboratory of Applied Optics, Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping (Sweden); Arreola-Jardón, G. [Cinvestav-IPN, Unidad Querétaro, Libramiento Norponiente 2000, 76230 Querétaro (Mexico); Karlsson, L.H.; Persson, P.O.Å. [Thin Film Physics Division, Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping (Sweden); Jiménez-Sandoval, S. [Cinvestav-IPN, Unidad Querétaro, Libramiento Norponiente 2000, 76230 Querétaro (Mexico)

2014-11-28

The effective complex dielectric function (ε) of Cu and O containing CdTe thin films is reported in the spectral range of 0.05 to 6 eV. The films were fabricated by rf sputtering from targets comprised by a mixture of CdTe and CuO powders with nominal Cu and O concentrations in the range of 2–10 at.%. Low concentration levels improved the crystalline quality of the films. Spectroscopic ellipsometry and transmittance measurements were used to determine ε. The critical point energies E{sub 1}, E{sub 1} + Δ{sub 1}, and E{sub 2} of CdTe are red-shifted with the incorporation of Cu and O. Also, an absorption band is developed in the infrared range which is associated with a mixture of CdTe and low resistivity phases Cu{sub 2−x}Te according to an effective medium analysis. The elemental distribution of the films was mapped by energy dispersive X-ray spectroscopy using scanning transmission electron microscopy. - Highlights: • Incorporation of 2 to 10 at.% of Cu and O atoms in CdTe films • Improved crystalline quality with 2 and 3 at.% of Cu and O • Complex dielectric function of Cu and O containing CdTe thin films • Effective medium modeling of below band-gap absorption.

Self-Assembled Formation of Well-Aligned Cu-Te Nano-Rods on Heavily Cu-Doped ZnTe Thin Films

Science.gov (United States)

Liang, Jing; Cheng, Man Kit; Lai, Ying Hoi; Wei, Guanglu; Yang, Sean Derman; Wang, Gan; Ho, Sut Kam; Tam, Kam Weng; Sou, Iam Keong

2016-11-01

Cu doping of ZnTe, which is an important semiconductor for various optoelectronic applications, has been successfully achieved previously by several techniques. However, besides its electrical transport characteristics, other physical and chemical properties of heavily Cu-doped ZnTe have not been reported. We found an interesting self-assembled formation of crystalline well-aligned Cu-Te nano-rods near the surface of heavily Cu-doped ZnTe thin films grown via the molecular beam epitaxy technique. A phenomenological growth model is presented based on the observed crystallographic morphology and measured chemical composition of the nano-rods using various imaging and chemical analysis techniques. When substitutional doping reaches its limit, the extra Cu atoms favor an up-migration toward the surface, leading to a one-dimensional surface modulation and formation of Cu-Te nano-rods, which explain unusual observations on the reflection high energy electron diffraction patterns and apparent resistivity of these thin films. This study provides an insight into some unexpected chemical reactions involved in the heavily Cu-doped ZnTe thin films, which may be applied to other material systems that contain a dopant having strong reactivity with the host matrix.

Deposition of Cu-doped PbS thin films with low resistivity using DC sputtering

Directory of Open Access Journals (Sweden)

Hariyadi Soetedjo

2018-03-01

Full Text Available Investigation of the electrical resistivity of Cu-doped PbS thin films has been carried out. The films were prepared using a DC sputtering technique. The doping was achieved by introducing the Cu dopant plate material directly on the surface of the PbS sputtering target plate. SEM-EDX data shows the Cu concentration in the PbS film to be proportional to the Cu plate diameter. The XRD pattern indicates the film is in crystalline cubic form. The Hall effect measurement shows that Cu doping yields an increase in the carrier concentration to 3.55 × 1019 cm−3 and a significant decrease in electrical resistivity. The lowest resistivity obtained was 0.13 Ωcm for a Cu concentration of 18.5%. Preferential orientation of (1 1 1 and (2 0 0 occurs during deposition. Keywords: Thin films, Lead sulfide, Sputtering, Resistivity, Semiconductor, Infrared

Structural and magnetic properties of pure and Cu doped In{sub 2}O{sub 3} thin films

Energy Technology Data Exchange (ETDEWEB)

Krishna, N. Sai; Kaleemulla, S., E-mail: skaleemulla@gmail.com; Rao, N. Madhusudhana; Krishnamoorthi, C.; Begam, M. Rigana [Thin Films Laboratory, School of Advanced Sciences, VIT University, Vellore – 632014 (India); Amarendra, G. [Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam –603102 (India); UGC-DAE-CSR, Kalpakkam Node, Kokilamedu-603104 (India)

2015-06-24

Pure and Cu (7 at.%) doped In{sub 2}O{sub 3} thin films were prepared using an electron beam evaporation technique. A systematic study was carried out on the structural, chemical and magnetic properties of the thin films. X-ray diffraction analysis revealed that all the films were cubic in structure. The pure and Cu doped In{sub 2}O{sub 3} thin films showed ferromagnetism at room temperature. The Cu doped In{sub 2}O{sub 3} thin films showed the saturation magnetization, coercivity and retentivity of 38.71 emu/cm{sup 3}, 245 G and 5.54 emu/cm{sup 3}, respectively.

Post-annealing effect on the room-temperature ferromagnetism in Cu-doped ZnO thin films

International Nuclear Information System (INIS)

Hu, Yu-Min; Kuang, Chein-Hsiun; Han, Tai-Chun; Yu, Chin-Chung; Li, Sih-Sian

2015-01-01

In this work, we investigated the structural and magnetic properties of both as-deposited and post-annealed Cu-doped ZnO thin films for better understanding the possible mechanisms of room-temperature ferromagnetism (RT-FM) in ZnO-based diluted magnetic oxides. All of the films have a c-axis-oriented wurtzite structure and display RT-FM. X-ray photoelectron spectroscopy results showed that the incorporated Cu ions in as-deposited films are in 1+ valence state merely, while an additional 2+ valence state occurs in post-annealed films. The presence of Cu 2+ state in post-annealed film accompanies a higher magnetization value than that of as-deposited film and, in particular, the magnetization curves at 10 K and 300 K of the post-annealed film separate distinctly. Since Cu 1+ ion has a filled 3d band, the RT-FM in as-deposited Cu-doped ZnO thin films may stem solely from intrinsic defects, while that in post-annealed films is enhanced due to the presence of CuO crystallites

Magnetic and structural study of Cu-doped TiO2 thin films

International Nuclear Information System (INIS)

Torres, C.E. Rodriguez; Golmar, F.; Cabrera, A.F.; Errico, L.; Navarro, A.M. Mudarra; Renteria, M.; Sanchez, F.H.; Duhalde, S.

2007-01-01

Transparent pure and Cu-doped (2.5, 5 and 10 at.%) anatase TiO 2 thin films were grown by pulsed laser deposition technique on LaAlO 3 substrates. The samples were structurally characterized by X-ray absorption spectroscopy and X-ray diffraction. The magnetic properties were measured using a SQUID. All films have a FM-like behaviour. In the case of the Cu-doped samples, the magnetic cycles are almost independent of the Cu concentration. Cu atoms are forming CuO and/or substituting Ti in TiO 2 . The thermal treatment in air promotes the CuO segregation. Since CuO is antiferromagnetic, the magnetic signals present in the films could be assigned to Cu substitutionally replacing cations in TiO 2

Chemical bath deposited and dip coating deposited CuS thin films - Structure, Raman spectroscopy and surface study

Science.gov (United States)

Tailor, Jiten P.; Khimani, Ankurkumar J.; Chaki, Sunil H.

2018-05-01

The crystal structure, Raman spectroscopy and surface microtopography study on as-deposited CuS thin films were carried out. Thin films deposited by two techniques of solution growth were studied. The thin films used in the present study were deposited by chemical bath deposition (CBD) and dip coating deposition techniques. The X-ray diffraction (XRD) analysis of both the as-deposited thin films showed that both the films possess covellite phase of CuS and hexagonal unit cell structure. The determined lattice parameters of both the films are in agreement with the standard JCPDS as well as reported data. The crystallite size determined by Scherrer's equation and Hall-Williamsons relation using XRD data for both the as-deposited thin films showed that the respective values were in agreement with each other. The ambient Raman spectroscopy of both the as-deposited thin films showed major emission peaks at 474 cm-1 and a minor emmision peaks at 265 cm-1. The observed Raman peaks matched with the covellite phase of CuS. The atomic force microscopy of both the as-deposited thin films surfaces showed dip coating thin film to be less rough compared to CBD deposited thin film. All the obtained results are presented and deliberated in details.

Electrodeposited Cu2ZnSnS4 thin films

CSIR Research Space (South Africa)

Valdes, M

2014-05-01

Full Text Available Cu(sub2)ZnSnS(sub4)(CZTS) thin films have been prepared using Electrochemical Atomic Layer Deposition (EC-ALD)and also by one-step conventional constant potential electrodeposition. Optimal deposition conditionswere investigated using cyclic...

Preparation and structure characterization of SmCo5(0001) epitaxial thin films grown on Cu(111) underlayers

International Nuclear Information System (INIS)

Ohtake, Mitsuru; Nukaga, Yuri; Futamoto, Masaaki; Kirino, Fumiyoshi

2009-01-01

SmCo 5 (0001) epitaxial films were prepared on Cu(111) single-crystal underlayers formed on Al 2 O 3 (0001) substrates at 500 deg. C. The nucleation and growth mechanism of (0001)-oriented SmCo 5 crystal on Cu(111) underlayer is investigated and a method to control the nucleation is proposed. The SmCo 5 epitaxial thin film formed directly on Cu underlayer consists of two types of domains whose orientations are rotated around the film normal by 30 deg. each other. By introducing a thin Co seed layer on the Cu underlayer, a SmCo 5 (0001) single-crystal thin film is successfully obtained. Nucleation of SmCo 5 crystal on Cu underlayer seems controllable by varying the interaction between the Cu underlayer and the SmCo 5 layer

Preparation and characterization of Cu2SnS3 thin films by electrodeposition

Science.gov (United States)

Patel, Biren; Narasimman, R.; Pati, Ranjan K.; Mukhopadhyay, Indrajit; Ray, Abhijit

2018-05-01

Cu2SnS3 thin films were electrodeposited on F:SnO2/Glass substrates at room temperature by using aqueous solution. Copper and tin were first electrodeposited from single bath and post annealed in the presence of sulphur atmosphere to obtain the Cu2SnS3 phase. The Cu2SnS3 phase with preferred orientation along the (112) crystal direction grows to greater extent by the post annealing of the film. Raman analysis confirms the monoclinic crystal structure of Cu2SnS3 with principle mode of vibration as A1 (symmetric breathing mode) corresponding to the band at 291 cm-1. It also reveals the benign coexistence of orthorhombic Cu3SnS4 and Cu2SnS7 phases. Optical properties of the film show direct band gap of 1.25 eV with a high absorption coefficient of the order of 104 cm-1 in the visible region. Photo activity of the electrodeposited film was established in two electrode photoelectro-chemical cell, where an open circuit voltage of 91.6 mV and a short circuit current density of 10.6 µA/cm2 were recorded. Fabrication of Cu2SnS3 thin film heterojunction solar cell is underway.

Synthesis of high-oxidation Y-Ba-Cu-O phases in superoxygenated thin films

Science.gov (United States)

Zhang, H.; Gauquelin, N.; McMahon, C.; Hawthorn, D. G.; Botton, G. A.; Wei, J. Y. T.

2018-03-01

It is known that solid-state reaction in high-pressure oxygen can stabilize high-oxidation phases of Y-Ba-Cu-O superconductors in powder form. We extend this superoxygenation concept of synthesis to thin films which, due to their large surface-to-volume ratio, are more reactive thermodynamically. Epitaxial thin films of YBa2Cu3O7 -δ grown by pulsed laser deposition are annealed at up to 700 atm O2 and 900 ∘C , in conjunction with Cu enrichment by solid-state diffusion. The films show the clear formation of Y2Ba4Cu7O15 -δ and Y2Ba4Cu8O16 as well as regions of YBa2Cu5O9 -δ and YBa2Cu6O10 -δ phases, according to scanning transmission electron microscopy, x-ray diffraction, and x-ray absorption spectroscopy. Similarly annealed YBa2Cu3O7 -δ powders show no phase conversion. Our results demonstrate a route of synthesis towards discovering more complex phases of cuprates and other superconducting oxides.

Thickness-dependent radiative properties of Y-Ba-Cu-O thin films

International Nuclear Information System (INIS)

Phelan, P.E.; Chen, G.; Tien, C.L.

1991-01-01

Some applications of high-temperature superconductors where their thermal radiative behavior is important, such as bolometers, optically-triggered switches and gates, and space-cooled electronics, required the superconductor to be in the form of a very thin film whose radiative behavior cannot be adequately represented by a semi-infinite analysis. Two properties of particular importance are the film absorptance and the combined film/substrate absorptance, which are crucial to the operation of many devices. This paper reports on calculations of the absorptance of superconducting-state Y-Ba-Cu-O films on MgO substrates which suggest that for film thicknesses less than about 50 nm, a decrease in the film thickness leads to an increase in both the film absorptance and the film/substrate absorptance. Furthermore, the film absorptance is maximum at some optimal value of film thickness. Assuming the film to be a smooth, continuous slab with a refractive index equal to that of the bulk Y-Ba-Cu-O is verified, at least in the normal state and for films as thin as 35 nm, by room-temperature reflectance and transmittance measurements

Preparation of Copper Iodide (CuI) Thin Film by In-Situ Spraying and Its Properties

International Nuclear Information System (INIS)

Rahmi, G H; Pratiwi, P; Aimon, A H; Winata, T; Iskandar, F; Nuryadi, B W

2016-01-01

Perovskite based solar cells have attracted interest as low-cost and high-efficiency solar cells due to their great performance, with efficiency up to 20.1%. One type of hole transport material (HTM) used in perovskite based solar cells is copper iodide (CuI) thin film. CuI is inexpensive and has high mobility compared to other HTMs commonly used in perovskite based solar cells. However, diisopropylsulfide solvent, which is used to dissolve CuI in the preparation process, is a malodorous and toxic compound. Therefore, the objective of this research was to develop a synthesis method for CuI thin film with in-situ spraying, a low- cost, safe and easy fabrication method. As precursor solution, CuSO 45 H 2 O was dissolved in ammonia and KI aqueous solution. The precursor solution was then sprayed directly onto a glass substrate with appropriate temperature to form CuI film. The prepared thin films were characterized by X-ray diffractometer, UV-Vis spectrophotometer, scanning electron microscope and four-point probes to study their properties. (paper)

Stability of Tl-Ba-Ca-Cu-O superconducting thin films

International Nuclear Information System (INIS)

Siegal, M. P.; Overmyer, D. L.; Venturini, E. L.; Padilla, R. R.; Provencio, P. N.

1999-01-01

We report the stability of TlBa 2 CaCu 2 O 7 and Tl 2 Ba 2 CaCu 2 O 8 on LaAlO 3 (100) epitaxial thin films, under a variety of conditions. All films are stable in acetone and methanol and with repeated thermal cycling to cryogenic temperatures. Moisture, especially vapor, degrades film quality rapidly. These materials are stable to high temperatures in either N 2 or O 2 ambients. While total degradation, resulting from Tl depletion, occurs at the same temperatures for both phases, 600 degree sign C in N 2 and 700 degree sign C in O 2 , the onset of degradation occurs at somewhat lower temperatures for TlBa 2 CaCu 2 O 7 than for Tl 2 Ba 2 CaCu 2 O 8 . (c) 1999 Materials Research Society

Deposition and characterization of CuInSe2 thin films

International Nuclear Information System (INIS)

Dhere, N.G.; Ferreira, C.L.; Cruz, L.R.O.; Mattoso, I.G.; Alves, R.M.P.

1988-01-01

CuInSe 2 thin films with 1,3 to 1,7 μm of thickness were deposited by the constituent elements (copper, indium and selenium) in glass substrate. The producted films were characterized by scanning microscopy, X-ray diffraction, Auger electron spectroscopy, Hall effect measures and optical absorption. (C.G.C.) [pt

Characterization of CuS nanocrystalline thin films synthesized by chemical bath deposition and dip coating techniques

International Nuclear Information System (INIS)

Chaki, Sunil H.; Deshpande, M.P.; Tailor, Jiten P.

2014-01-01

CuS thin films were synthesized by chemical bath deposition and dip coating techniques at ambient temperature. The energy dispersive analysis of X-rays of the thin films confirmed that both the as synthesized thin films are stoichiometric. The X-ray diffraction of the chemical bath deposited and dip coating deposited thin films showed that the films possess hexagonal structure having lattice parameters, a = b = 3.79 A and c = 16.34 A. The crystallite sizes determined from the X-ray diffraction data using Scherrer's formula for the chemical bath deposition and dip coating deposition thin films came out to be nearly 11 nm and 13 nm, respectively. The optical microscopy of the as deposited thin films surfaces showed that the substrates are well covered in both the deposited films. The scanning electron microscopy of the thin films clearly showed that in chemical bath deposited thin films the grain size varies from few μm to nm, while in dip coating deposited films the grain size ranges in nm. The optical bandgap determined from the optical absorbance spectrum analysis showed, chemical bath deposited thin films possess direct bandgap of 2.2 eV and indirect bandgap of 1.8 eV. In the case of dip coating deposited thin films, the direct bandgap is 2.5 eV and indirect bandgap is 1.9 eV. The d.c. electrical resistivity variation with temperature for both the deposited films showed that the resistivity decreases with temperature thus confirming the semiconducting nature. The thermoelectric power variations with temperature and the room temperature Hall Effect study of both the synthesized CuS thin films showed them to be of p-type conductivity. The obtained results are discussed in details. - Highlights: • CuS thin films were synthesized by chemical bath deposition and dip coating techniques. • The films possessed hexagonal structure. • The optical absorption showed that the films had direct and indirect bandgap. • Study of electrical transport properties

Preparation of highly oriented Al:ZnO and Cu/Al:ZnO thin films by sol-gel method and their characterization

Energy Technology Data Exchange (ETDEWEB)

Vijayaprasath, G.; Murugan, R. [School of Physics, Alagappa University, Karaikudi 630 004, Tamil Nadu (India); Mahalingam, T. [Department of Electrical and Computer Engineering, Ajou University, Suwon 443-749 (Korea, Republic of); Hayakawa, Y. [Research Institute of Electronics, Shizuoka University, Hamamatsu 432-8011 (Japan); Ravi, G., E-mail: gravicrc@gmail.com [School of Physics, Alagappa University, Karaikudi 630 004, Tamil Nadu (India)

2015-11-15

Highly oriented thin films of Al doped ZnO (Al:ZnO) and Cu co-doped Al:ZnO (Cu/Al:ZnO) thin films were successfully deposited by sol–gel spin coating on glass substrates. The deposited films were characterized using X-ray diffraction analysis and found to exhibit hexagonal wurtzite structure with c-axis orientation. SEM images revealed that hexagonal rod shaped morphologies were grown perpendicular to the substrate surface due to repeated deposition process. High transmittance values were observed for pure ZnO compared to Al:ZnO and Cu/Al:ZnO thin films. The band gap widening is caused by the increase of carrier concentration, which is believed to be due to Burstein-Moss effect due to Al and Cu doping. PL spectra of Cu/Al:ZnO thin films indicate that the UV emission peaks slightly shifted towards lower energy side. XPS study was carried out for Zn{sub 0.80}Al{sub 0.10}Cu{sub 0.10}O thin films to analyze the binding energy of Al, Cu, Zn and O. Magnetic measurement studies exhibited ferromagnetic behavior at room temperature, which may be due to the increase in copper concentration in the doped films. The ferromagnetic behavior can be understood from the exchange coupling between localized ‘d’ spin of Cu ion mediated by free delocalized carriers. - Highlights: • High quality of Al:ZnO and Cu co-doped Al:ZnO thin films were fabricated by sol–gel method. • The XRD analyses revealed that the deposited thin films have hexagonal wurtzite structure. • XPS was carried out for Zn{sub 0.80}Al{sub 0.10}Cu{sub 0.10}O films to analyze the binding energy of Al, Cu, Zn and O. • SEM studies were made for Al:ZnO and Cu/Al:ZnO thin films. • RTFM was observed in Cu co-doped Al:ZnO thin films.

Preparation of YBa2Cu3O7-δ epitaxial thin films by pulsed ion-beam evaporation

International Nuclear Information System (INIS)

Sorasit, S.; Yoshida, G.; Suzuki, T.; Suematsu, H.; Jiang, W.; Yatsui, K.

2001-01-01

Thin films of YBa 2 Cu 3 O 7-δ (Y-123) grown epitaxially have been successfully deposited by ion-beam evaporation (IBE). The c-axis oriented YBa 2 Cu 3 O 7-δ thin films were successfully deposited on MgO and SrTiO 3 substrates. The Y-123 thin films which were prepared on the SrTiO 3 substrates were confirmed to be epitaxially grown, by X-ray diffraction analysis. The instantaneous deposition rate of the Y-123 thin films was estimated as high as 4 mm/s. (author)

The investigation on electrochemical reaction mechanism of CuF2 thin film with lithium

International Nuclear Information System (INIS)

Cui Yanhua; Xue Mingzhe; Zhou Yongning; Peng Shuming; Wang Xiaolin; Fu Zhengwen

2011-01-01

Crystalline CuF 2 thin films were prepared by pulsed laser deposition under room temperature. The physical and electrochemical properties of the as-deposited thin films have been investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), galvanostatic cycling and cyclic voltammetry (CV). Reversible capacity of 544 mAh g -1 was achieved in the potential range of 1.0-4.0 V. A reversible couple of redox peaks at 3.0 V and 3.7 V was firstly observed. By using ex situ XRD and TEM techniques, an insertion process followed by a fully conversion reaction to Cu and LiF was revealed in the lithium electrochemical reaction of CuF 2 thin film electrode. The reversible insertion reaction above 2.8 V could provide a capacity of about 125 mAh g -1 , which makes CuF 2 a potential cathode material for rechargeable lithium batteries.

Characteristics of CuInSe2 thin films grown by the selenization method

International Nuclear Information System (INIS)

Kim, Sang Deok; Kim, Hyeong Joon; Adurodija, Frederick Ojo; Yoon, Kyeong Hoon; Song, Jin Soo

1999-01-01

CuInSe 2 thin films were formed from a selenization of co-sputtered Cu-In alloy layers which consisted of only two phases, CuIn 2 and Cu 11 In 9 . A linear dependence of the Cu-In alloy film composition on the Cu/In sputtering power was found. The metallic layers were selenized in vacuum or at 1 atm. A small number of Cu-Se and In-Se compounds was observed during the early stage of selenization, and single-phase CuInSe 2 was more easily formed in vacuum than at atmospheric pressure. Therefore, CuInSe 2 films selenized in vacuum showed larger grain sizes, smoother surfaces, and denser microstructures than those selenized at 1 atm

Memristive properties of transparent oxide semiconducting (Ti,Cu)O x -gradient thin film

Science.gov (United States)

Domaradzki, Jarosław; Kotwica, Tomasz; Mazur, Michał; Kaczmarek, Danuta; Wojcieszak, Damian

2018-01-01

The paper presents the results of the analysis of memristive properties observed in (Ti,Cu)-oxide thin film with gradient distribution of elements, prepared using the multi-source reactive magnetron co-sputtering process. The performed electrical measurements showed the presence of pinched hysteresis loops in the voltage-current plane for direct and alternating current bipolar periodic signal stimulation. Investigations performed using a transmission electron microscope equipped with an energy dispersive spectrometer showed that the elemental composition at the cross section of the thin film was very well correlated with the gradient V-shaped profile of the powering of the magnetron source equipped with a Cu target. The prepared samples were transparent in the visible part of optical radiation. The obtained results showed that the prepared gradient (Ti,Cu)O x thin film could be an interesting alternative to the conventional multilayer stack construction of memristive devices, which makes them a promising material for manufacturing transparent memory devices for transparent electronics.

Electrochemical preparation of photoelectrochemically active CuI thin films from room temperature ionic liquid

International Nuclear Information System (INIS)

Huang, Hsin-Yi; Chien, Da-Jean; Huang, Genin-Gary; Chen, Po-Yu

2012-01-01

Highlights: ► CuI film can be formed by anodization of Cu in ionic liquid containing iodide. ► Coordinating strength of anion in ionic liquid determine the formation of CuI. ► Photocurrent of the CuI film can be observed in aqueous solution and in ionic liquid. ► Cu layer coated on conductive substrates can be converted to CuI. - Abstract: Cuprous iodide (CuI) thin films with photoelectrochemical activity were prepared by anodizing copper wire or copper-electrodeposited tungsten wire in the room temperature ionic liquid 1-butyl-3-methylimidazolium hexafluorophosphate (BMI-PF 6 RTIL) containing N-butyl-N-methylpyrrolidinium iodide (BMP-I). A copper coating was formed on the tungsten wire by potentiostatic electrodeposition in BMP-dicyanamide (BMP-DCA) RTIL containing copper chloride (CuCl). The CuI films formed using this method were compact, fine-grained and exhibited good adhesion. The characteristic diffraction signals of CuI were observed by powder X-ray diffractometry (XRD). X-ray photoelectron spectroscopy (XPS) also confirmed the formation of a CuI compound semiconductor. The CuI films demonstrated an apparent and stable photocurrent under white light illumination in aqueous solutions and in a RTIL. This method has enabled the electrochemical formation of CuI from a RTIL for the first time, and the first observation of a photocurrent produced from CuI in a RTIL. The coordinating strength of the anions of the RTIL is the key to the successful formation of the CuI thin film. If the coordinating strength of the anions of the RTIL is too strong, no CuI formation is observed.

Stability of Tl-Ba-Ca-Cu-O superconducting thin films

Energy Technology Data Exchange (ETDEWEB)

Siegal, M. P. [Sandia National Laboratories, Albuquerque, New Mexico 87185-1421 (United States); Overmyer, D. L. [Sandia National Laboratories, Albuquerque, New Mexico 87185-1421 (United States); Venturini, E. L. [Sandia National Laboratories, Albuquerque, New Mexico 87185-1421 (United States); Padilla, R. R. [Sandia National Laboratories, Albuquerque, New Mexico 87185-1421 (United States); Provencio, P. N. [Sandia National Laboratories, Albuquerque, New Mexico 87185-1421 (United States)

1999-12-01

We report the stability of TlBa{sub 2}CaCu{sub 2}O{sub 7} and Tl{sub 2}Ba{sub 2}CaCu{sub 2}O{sub 8} on LaAlO{sub 3}(100) epitaxial thin films, under a variety of conditions. All films are stable in acetone and methanol and with repeated thermal cycling to cryogenic temperatures. Moisture, especially vapor, degrades film quality rapidly. These materials are stable to high temperatures in either N{sub 2} or O{sub 2} ambients. While total degradation, resulting from Tl depletion, occurs at the same temperatures for both phases, 600 degree sign C in N{sub 2} and 700 degree sign C in O{sub 2}, the onset of degradation occurs at somewhat lower temperatures for TlBa{sub 2}CaCu{sub 2}O{sub 7} than for Tl{sub 2}Ba{sub 2}CaCu{sub 2}O{sub 8}. (c) 1999 Materials Research Society.

Effect of Annealing Temperature on Flowerlike Cu3BiS3 Thin Films Grown by Chemical Bath Deposition

Science.gov (United States)

Deshmukh, S. G.; Patel, S. J.; Patel, K. K.; Panchal, A. K.; Kheraj, Vipul

2017-10-01

For widespread application of thin-film photovoltaic solar cells, synthesis of inexpensive absorber material is essential. In this work, deposition of ternary Cu3BiS3 absorber material, which contains abundant and environmentally benign elements, was carried out on glass substrate. Flowerlike Cu3BiS3 thin films with nanoflakes as building block were formed on glass substrate by chemical bath deposition. These films were annealed at 573 K and 673 K in sulfur ambient for structural improvement. Their structure was characterized using Raman spectroscopy, as well as their surface morphological and optical properties. The x-ray diffraction profile of as-deposited Cu3BiS3 thin film revealed amorphous structure, which transformed to orthorhombic phase after annealing. The Raman spectrum exhibited a characteristic peak at 290 cm-1. Scanning electron microscopy of as-deposited Cu3BiS3 film confirmed formation of nanoflowers with diameter of around 1052 nm. Wettability testing of as-deposited Cu3BiS3 thin film demonstrated hydrophobic nature, which became hydrophilic after annealing. The measured ultraviolet-visible (UV-Vis) absorption spectra of the Cu3BiS3 thin films gave an absorption coefficient of 105 cm-1 and direct optical bandgap of about 1.42 eV after annealing treatment. Based on all these results, such Cu3BiS3 material may have potential applications in the photovoltaic field as an absorber layer.

Preparation of transparent Cu{sub 2}Y{sub 2}O{sub 5} thin films by RF magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Chiu, Te-Wei, E-mail: tewei@ntut.edu.tw; Chang, Chih-Hao; Yang, Li-Wei; Wang, Yung-Po

2015-11-01

Highlights: • Cu{sub 2}Y{sub 2}O{sub 5} thin films were prepared by RF magnetron sputtering. • Cu{sub 2}Y{sub 2}O{sub 5} thin films have high transmittance and antibacterial properties. • Mechanical properties of Cu{sub 2}Y{sub 2}O{sub 5} thin films were investigated. - Abstract: Cu{sub 2}Y{sub 2}O{sub 5} thin films were deposited on non-alkali glass substrates by RF magnetron sputtering. Its crystal structure, microstructure, optical property, mechanical property, and antibacterial activity were investigated by grazing-incidence X-ray diffraction, transmittance spectra, nanoindenter, and antibiotics test, respectively. A single-phase of Cu{sub 2}Y{sub 2}O{sub 5} was obtained while annealing at 700 °C in air and its optical transparency was >80% in the visible region. The hardness and elastic modulus of the film were 6.7 GPa and 82 GPa, respectively. Antibiotics testing result revealed that Cu{sub 2}Y{sub 2}O{sub 5} surface had a superior antibacterial performance even at a dark environment. Therefore, Cu{sub 2}Y{sub 2}O{sub 5} is a promising novel transparent antibacterial hard coating material.

Phase and electrical properties of PZT thin films embedded with CuO nano-particles by a hybrid sol-gel route

Science.gov (United States)

Sreesattabud, Tharathip; Gibbons, Brady J.; Watcharapasorn, Anucha; Jiansirisomboon, Sukanda

2013-07-01

Pb(Zr0.52Ti0.48)O3 or PZT thin films embedded with CuO nano-particles were successfully prepared by a hybrid sol-gel process. In this process, CuO (0, 0.1, 0.2, 0.3, 0.4, 0.5 and 1 wt. %) nanopowder was suspended in an organometallic solution of PZT, and then coated on platinised silicon substrate using a spin-coating technique. The influence of CuO nano-particles' dispersion on the phase of PZT thin films was investigated. XRD results showed a perovskite phase in all films. At the CuO concentration of 0.4-1 wt. %, a second phase was observed. The addition of CuO nano-particles affected the orientation of PZT thin films. The addition was also found to reduce the ferroelectric properties of PZT thin films. However, at 0.2 wt. % CuO concentration, the film exhibited good ferroelectric properties similar to those of PZT films. In addition, the fatigue retention properties of the PZT/CuO system was observed, and it showed 14% fatigue at 108 switching bipolar pulse cycles while the fatigue in PZT thin films was found to be 17% at the same switching bipolar pulse cycles.

Growth and applications of superconducting Y-Ba-Cu-O thin films

International Nuclear Information System (INIS)

Pinto, R.

1991-01-01

This paper attempt to highlight the important PVD techniques such as evaporation, sputtering, ion beam deposition and excimer laser ablation for the preparation of superconducting YBaCuO thin films. Since enormous amount of work has been published over the last few years, this review is not comprehensive even in PVD techniques. In the area of applications for electronics, thin film appear to be much more promising than bulk high T c superconductors. Already high J c values in the region of 4 x 10 6 A cm -2 have been realized in thin films. Resonators and transmission lines have been fabricated using 123 films showing a transmission loss significantly lower than that of copper at 77 degrees K at X-band frequencies. This review will discuss some of the important electronic applications feasible with 123 films

Magnetic and structural study of Cu-doped TiO{sub 2} thin films

Energy Technology Data Exchange (ETDEWEB)

Torres, C.E. Rodriguez [Dpto de Fisica-IFLP, Fac. Cs. Exactas, Universidad Nacional de La Plata-CONICET, CC 67, 1900 La Plata (Argentina)], E-mail: torres@fisica.unlp.edu.ar; Golmar, F. [Laboratorio de Ablacion Laser, Facultad de Ingenieria, Universidad de Buenos Aires, Paseo Colon 850, 1063 Buenos Aires (Argentina); Cabrera, A.F.; Errico, L.; Navarro, A.M. Mudarra; Renteria, M.; Sanchez, F.H. [Dpto de Fisica-IFLP, Fac. Cs. Exactas, Universidad Nacional de La Plata-CONICET, CC 67, 1900 La Plata (Argentina); Duhalde, S. [Laboratorio de Ablacion Laser, Facultad de Ingenieria, Universidad de Buenos Aires, Paseo Colon 850, 1063 Buenos Aires (Argentina)

2007-10-31

Transparent pure and Cu-doped (2.5, 5 and 10 at.%) anatase TiO{sub 2} thin films were grown by pulsed laser deposition technique on LaAlO{sub 3} substrates. The samples were structurally characterized by X-ray absorption spectroscopy and X-ray diffraction. The magnetic properties were measured using a SQUID. All films have a FM-like behaviour. In the case of the Cu-doped samples, the magnetic cycles are almost independent of the Cu concentration. Cu atoms are forming CuO and/or substituting Ti in TiO{sub 2}. The thermal treatment in air promotes the CuO segregation. Since CuO is antiferromagnetic, the magnetic signals present in the films could be assigned to Cu substitutionally replacing cations in TiO{sub 2}.

Fabrication and characterization of CuAlO2 transparent thin films prepared by spray technique

International Nuclear Information System (INIS)

Bouzidi, C.; Bouzouita, H.; Timoumi, A.; Rezig, B.

2005-01-01

CuAlO 2 thin films have been grown on glass substrates using spray technique; a low-cost method of thin films depositing. The deposition was carried out in a 450-525 deg. C range of substrate temperature. The solution and gas flow rates were kept constant at 5 cm 3 min -1 and 6.10 -3 m 3 min -1 , respectively. Compressed air was used as a carrier gas. The structural, morphological and optical properties of these thin films have been studied. These properties are strongly related to the substrate temperature and to the [Cu]/[Al] molar ratio r. X-ray diffraction analysis confirmed the initial amorphous nature of as-deposited films and phase transition into crystalline CuAlO 2 with the preferential orientation (1 0 1) upon annealing at 570 deg. C. The optical transmission of 80% has been achieved in the visible spectrum. CuAlO 2 band gap energy in the range of 3.34-3.87 eV has been found by optical measurement depending on fabrication parameters

Layered Cu-based electrode for high-dielectric constant oxide thin film-based devices

International Nuclear Information System (INIS)

Fan, W.; Saha, S.; Carlisle, J.A.; Auciello, O.; Chang, R.P.H.; Ramesh, R.

2003-01-01

Ti-Al/Cu/Ta multilayered electrodes were fabricated on SiO 2 /Si substrates by ion beam sputtering deposition, to overcome the problems of Cu diffusion and oxidation encountered during the high dielectric constant (κ) materials integration. The Cu and Ta layers remained intact through the annealing in oxygen environment up to 600 deg. C. The thin oxide layer, formed on the Ti-Al surface, effectively prevented the oxygen penetration toward underneath layers. Complex oxide (Ba x Sr 1-x )TiO 3 (BST) thin films were grown on the layered Ti-Al/Cu/Ta electrodes using rf magnetron sputtering. The deposited BST films exhibited relatively high permittivity (150), low dielectric loss (0.007) at zero bias, and low leakage current -8 A/cm 2 at 100 kV/cm

P-type CuxS thin films: Integration in a thin film transistor structure

International Nuclear Information System (INIS)

Nunes de Carvalho, C.; Parreira, P.; Lavareda, G.; Brogueira, P.; Amaral, A.

2013-01-01

Cu x S thin films, 80 nm thick, are deposited by vacuum thermal evaporation of sulfur-rich powder mixture, Cu 2 S:S (50:50 wt.%) with no intentional heating of the substrate. The process of deposition occurs at very low deposition rates (0.1–0.3 nm/s) to avoid the formation of Cu or S-rich films. The evolution of Cu x S films surface properties (morphology/roughness) under post deposition mild annealing in air at 270 °C and their integration in a thin film transistor (TFT) are the main objectives of this study. Accordingly, Scanning Electron Microscopy studies show Cu x S films with different surface morphologies, depending on the post deposition annealing conditions. For the shortest annealing time, the Cu x S films look to be constructed of grains with large dimension at the surface (approximately 100 nm) and consequently, irregular shape. For the longest annealing time, films with a fine-grained surface are found, with some randomly distributed large particles bound to this fine-grained surface. Atomic Force Microscopy results indicate an increase of the root-mean-square roughness of Cu x S surface with annealing time, from 13.6 up to 37.4 nm, for 255 and 345 s, respectively. The preliminary integration of Cu x S films in a TFT bottom-gate type structure allowed the study of the feasibility and compatibility of this material with the remaining stages of a TFT fabrication as well as the determination of the p-type characteristic of the Cu x S material. - Highlights: • Surface properties of annealed Cu x S films. • Variation of conductivity with annealing temperatures of Cu x S films. • Application of evaporated Cu x S films in a thin film transistor (TFT) structure. • Determination of Cu x S p-type characteristic from TFT behaviour

An investigation on silar Cu(In1-xAlx)Se2 thin films

International Nuclear Information System (INIS)

Dhanam, M.; Kavitha, B.; Velumani, S.

2010-01-01

Cu(In 1-x Al x )Se 2 [CIAS] thin films were prepared for the first time by successive ionic layer adsorption and reaction [SILAR] method with two different dipping cycles. The thickness of the films was measured by gravimetric technique. The structural, morphological, compositional, optical transition and electrical investigation of SILAR CIAS thin films with respect to two different dipping cycles have been discussed in this paper.

Growth and characterization of chalcostibite CuSbSe2 thin films for photovoltaic application

Science.gov (United States)

Tiwari, Kunal J.; Vinod, Vijay; Subrahmanyam, A.; Malar, P.

2017-10-01

Bulk copper antimony selenide was synthesized using mechanical alloying from the elemental precursors. Phase formation in milled powders was studied using x-ray diffraction (XRD) and Raman spectroscopy studies. The synthesized bulk source after cold compaction was used as source material for thin film deposition by e-beam evaporation. Thin film deposition was carried out at various e-beam current values (Ib ∼30, 40 and 50 mA) and at a substrate temperature of 200 °C. Near stoichiometric CuSbSe2 thin films were obtained for Ib values closer to 50 mA and post annealing at a temperature of 380 °C for 1 h. Thin films deposited using above conditions were found to exhibit an absorption coefficient (α) values of >105 cm-1 and a band gap value ∼1.18 eV that is closer to the reported band gap for CuSbSe2 compound.

Preparation of Cu2Sn3S7 Thin-Film Using a Three-Step Bake-Sulfurization-Sintering Process and Film Characterization

Directory of Open Access Journals (Sweden)

Tai-Hsiang Lui

2015-01-01

Full Text Available Cu2Sn3S7 (CTS can be used as the light absorbing layer for thin-film solar cells due to its good optical properties. In this research, the powder, baking, sulfur, and sintering (PBSS process was used instead of vacuum sputtering or electrochemical preparation to form CTS. During sintering, Cu and Sn powders mixed in stoichiometric ratio were coated to form the thin-film precursor. It was sulfurized in a sulfur atmosphere to form CTS. The CTS film metallurgy mechanism was investigated. After sintering at 500°C, the thin film formed the Cu2Sn3S7 phase and no impurity phase, improving its energy band gap. The interface of CTS film is continuous and the formation of intermetallic compound layer can increase the carrier concentration and mobility. Therefore, PBSS process prepared CTS can potentially be used as a solar cell absorption layer.

Preparation and characterization of CuInSe2 particles via the hydrothermal route for thin-film solar cells

International Nuclear Information System (INIS)

Wu, Chung-Hsien; Chen, Fu-Shan; Lin, Shin-Hom; Lu, Chung-Hsin

2011-01-01

Highlights: → A new hydrothermal process for preparing copper indium diselenide (CuInSe 2 ). → Well-crystallized CuInSe 2 particles are obtained at 180 deg. C for 1 h. → Densified CuInSe 2 thin films are prepared from ink printing. → Increasing temperatures result in an improvement of properties of CuInSe 2 films. - Abstract: CuInSe 2 powders with a chalcopyrite structure used in thin-film solar cells were successfully prepared via a hydrothermal method at low temperatures within short durations. Well-crystallized CuInSe 2 particles were formed via the hydrothermal reaction at 180 deg. C for 1 h. The concentrations of stabilizer, triethanolamine (TEA), significantly affected the purity, morphology and particle sizes of the prepared powders. Increasing the reaction duration and temperatures led to decrease the amount of second phase In(OH) 3 and resulted in the formation of pure CuInSe 2 . Densified CuInSe 2 thin films were prepared from ink printing with the addition of the flux. Increasing the selenization temperatures increased the grain size and improved the crystallinity of CuInSe 2 films.

Phase Competition Induced Bio-Electrochemical Resistance and Bio-Compatibility Effect in Nanocrystalline Zr x -Cu100-x Thin Films.

Science.gov (United States)

Badhirappan, Geetha Priyadarshini; Nallasivam, Vignesh; Varadarajan, Madhuri; Leobeemrao, Vasantha Priya; Bose, Sivakumar; Venugopal, Elakkiya; Rajendran, Selvakumar; Angleo, Peter Chrysologue

2018-07-01

Nano-crystalline Zrx-Cu100-x (x = 20-100 at.%) thin films with thickness ranging from 50 to 185 nm were deposited by magnetron co-sputtering with individual Zr and Cu targets. The as-sputtered thin films were characterized by Field Emission Scanning Electron Microscope (FE-SEM), Atomic Force Microscopy (AFM) and Glancing Incidence X-ray Diffraction (GIXRD) for structural and morphological properties. The crystallite size was found to decrease from 57 nm to 37 nm upon increasing the Zr content from 20 to 30 at.% with slight increase in the lattice strain from 0.17 to 0.33%. Further, increase in Zr content to 40 at.% leads to increase in the crystallite size to 57 nm due to stabilization of C10Zr7 phase along with the presence of nanocrystalline Cu-Zr phase. A bimodal distribution of grain size was observed from FE-SEM micrograph was attributed to the highest surface roughness in Zr30Cu70 thin films comprised of Cu10Zr7, Cu9Zr2, Cu-Zr intermetallic phases. In-vitro electrochemical behaviors of nano-crystalline Zrx-Cu100-x thin films in simulated body fluid (SBF) were investigated using potentiodynamic polarization studies. Electrochemical impedance spectroscopy (EIS) data fitting by equivalent electrical circuit fit model suggests that inner bulk layer contributes to high bio-corrosion resistance in Zrx-Cu100-x thin films with increase in Zr content. The results of cyto-compatibility assay suggested that Zr-Cu thin film did not introduce cytotoxicity to osteoblast cells, indicating its suitability as a bio-coating for minimally invasive medical devices.

Reactive pulsed laser deposition of Cu2ZnSnS4 thin films in H2S

International Nuclear Information System (INIS)

Surgina, G.D.; Zenkevich, A.V.; Sipaylo, I.P.; Nevolin, V.N.; Drube, W.; Teterin, P.E.; Minnekaev, M.N.

2013-01-01

Cu 2 ZnSnS 4 (CZTS) thin films have been grown by reactive pulsed laser deposition in H 2 S atmosphere, combining the alternate ablation from the metallic (Cu) and alloyed (Zn x Sn) targets at room temperature. The morphological, structural and optical properties of as grown CZTS thin films with varying compositions as well as upon annealing in N 2 atmosphere are investigated by Rutherford backscattering spectrometry, X-ray diffraction, Raman spectroscopy and optical spectrophotometry. The chemical bonding in the “bulk” of the CZTS films is elucidated via hard X-ray photoemission spectroscopy measurements. The formation of the good quality stoichiometric polycrystalline CZTS films is demonstrated upon optimization of the growth parameters. - Highlights: ► The new method of Cu 2 ZnSnS 4 (CZTS) thin films growth in H 2 S was realized. ► CZTS films were grown by pulsed laser deposition from Cu and alloyed Zn–Sn targets. ► The effect of the processing parameters on the CZTS properties was investigated. ► The chemical bonding in the “bulk” of CZTS films was studied

Effects of Chlorine Ions on the Dissolution Mechanism of Cu Thin Film in Phosphoric Acid Based Solution.

Science.gov (United States)

Seo, Bo-Hyun; Kim, Byoung O; Seo, Jong Hyun

2015-10-01

The dissolution mechanisms of Cu thin film were studied with a focus on the effect of chlorine ion concentrations in mixture solutions of phosphoric and nitric acid. The dissolution behaviors of Cu thin film were investigated by using potentio-dynamic curves and impedance spectroscopy with varying chlorine ion concentrations. The copper dissolution rate decreased and as a result of this change, CuCl, salt films formed on the Cu surface in the presence of chlorine ions in the mixture solution. Such behavior was interpreted as being competitive adsorption between chlorine and nitrate ions on the copper surface. The passive oxide film on the Cu surface was further investigated in detail using X-ray photoelectron spectroscopy in both the absence and presence of differing chlorine ion concentrations.

Formation dynamics of FeN thin films on Cu(100)

KAUST Repository

Heryadi, Dodi; Schwingenschlö gl, Udo

2012-01-01

To investigate the structural and magnetic properties of thin films of FeN we have performed ab initio molecular dynamics simulations of their formation on Cu(100) substrates. The iron nitride layers exhibit a p4gm(2 × 2) reconstruction and order

Electrical transport in (103) YBa2Cu3O7-x thin films

International Nuclear Information System (INIS)

Divin, Yu.Ya.; Poppe, U.; Faley, M.I.; Soltner, H.; Seo, J.W.; Kabius, B.; Urban, K.

1993-01-01

We have studied the electrical and structural properties of (103) YBa 2 Cu 3 O 7-x thin films to estimate the applicability of these films as base electrodes of planar-type Josephson junctions. (orig.)

YBa2Cu3O(7-x) based superconducting thin films by multitarget sputtering

International Nuclear Information System (INIS)

Bouteloup, E.; Mercey, B.; Poullain, G.; Brousse, T.; Murray, H.; Raveau, B.

1990-01-01

This paper reports a new technique to prepare superconducting YBa 2 Cu 3 O (7-x) thin films. The multitarget sputtering apparatus described below allows the simultaneous and reproducible production of numerous films with a metallic composition close to Y 17% Ba 33% Cu 50% . Superconducting films (R = 0) at 80 K have been produced on polycrystalline zirconia substrates after a high temperature annealing [fr

Post-growth annealing treatment effects on properties of Na-doped CuInS2 thin films

International Nuclear Information System (INIS)

Zribi, M.; Kanzari, M.; Rezig, B.

2008-01-01

Structural and optical properties of Na-doped CuInS 2 thin films grown by double source thermal evaporation method were studied. The films were annealed from 250 to 500 deg. C in a vacuum after evaporation. X-ray diffraction pattern indicated that there are traces of Cu and In 6 S 7 , which disappeared on annealing above 350 deg. C. Good quality CuInS 2 :Na 0.3% films were obtained on annealing at 500 deg. C. Furthermore, we found that the absorption coefficient of Na-doped CuInS 2 thin films reached 1.5 x 10 5 cm -1 . The change in band gap of the doped samples annealed in the temperatures from 250 to 500 deg. C was in the range 0.038-0.105 eV

Optical, structural and photocatalysis properties of Cu-doped TiO{sub 2} thin films

Energy Technology Data Exchange (ETDEWEB)

Bensouici, F., E-mail: fbensouici@yahoo.fr [Department of Physics, URMPE Unite, UMBB University, 35000 Boumerdes (Algeria); Bououdina, M.; Dakhel, A.A. [Department of Physics, College of Science, University of Bahrain, PO Box 32038 (Bahrain); Tala-Ighil, R.; Tounane, M.; Iratni, A. [Department of Physics, URMPE Unite, UMBB University, 35000 Boumerdes (Algeria); Souier, T. [Department of Physics, College of Science, Sultan Qaboos University, PO Box 36 (Oman); Liu, S.; Cai, W. [Key laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Technology, Center for Environmental and Energy Nanomaterials, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031 (China)

2017-02-15

Highlights: • A simple chemical route to obtain thin layers of Cu doped TiO{sub 2}. • Detailed structure analysis was carried out by Rietveld refinements. • Forming the CuO phase decreases the efficiency photocatalysis of TiO{sub 2}. - Abstract: Pure and Cu{sup +2} doped TiO{sub 2} thin films have been successfully deposited onto glass substrate by sol–gel dip-coating. The films were annealed at 450 °C for 1 h and characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM-EDX), atomic force microscopy (AFM), UV–vis spectrophotometer and photocatalytic degradation of methylene blue. XRD confirmed the presence of two phases at higher Cu concentration; TiO{sub 2} anatase and CuO. AFM analysis showed that the surface roughness increases within increasing Cu content as well as the presence of large aggregates at higher Cu content. SEM observations confirmed the granular structure of the films, and EDX analysis revealed a low solubility limit (effective doping) of Cu into TiO{sub 2} lattice. It was found that the optical band gap energy decreases with increasing Cu content. At constant irradiation time, the photo-degradation of methylene blue rate decreased with increasing concentration of Cu{sup +2}.

Effect of deposition time of sputtering Ag-Cu thin film on mechanical and antimicrobial properties

Science.gov (United States)

Purniawan, A.; Hermastuti, R.; Purwaningsih, H.; Atmono, T. M.

2018-04-01

Metallic implants are important components in biomedical treatment. However, post-surgery infection often occurs after installation of implant. The infections are usually treated by antibiotics, but it still causes several secondary problems. As a prevention treatment, the surgical instruments and implants must be in a sterile condition. This action is still not optimal too because the material still can attract the bacteria. From material science point of view, it can be anticipated by developing a type of material which has antibacterial properties or called antimicrobial material. Silver (Ag) and Copper (Cu) have antimicrobial properties to prevent the infection. In this research, the influence of deposition time of Ag-Cu thin film deposition process as antimicrobial material with Physical Vapor Deposition (PVD) RF Sputtering method was analyzed. Deposition time used were for 10, 15 and 20 minutes in Argon gas pressure around 3 x 10-2 mbar in during deposition process. The morphology and surface roughness of Ag-Cu thin film were characterized using SEM and AFM. Based on the results, the deposition time influences the quality morphology that the thin films have good homogeneity and complete structure for longer deposition time. In addition, from roughness measurement results show that increase deposition time decrease the roughness of thin film. Antimicrobial performance was analyzed using Kirby Bauer Test. The results show that all of sample have good antimicrobial inhibition. Adhesion quality was evaluated using Rockwell C Indentation Test. However, the results indicate that the Ag-Cu thin film has low adhesion strength.

Studying Selective Transparency in ZnS/ Cu/ ZnS Thin Films

International Nuclear Information System (INIS)

Ksibe, A.; Howari, H.; Diab, M.

2009-01-01

Dielectric/ Metal/ Dielectric (DMD) thin films deposited on glass offer of significant energy saving in buildings and can find other applications of advanced materials design. In an effort to reduce the complexity and cost production of DMD films, physical vapor deposition was used for the laboratory manufacture of ZnS/ Cu/ ZnS films on glass. ZnS was used because of its high refractive index, ease of deposition and low cost; Cu was used because of its low absorption in the visible spectrum and its thermal stability. The films produced were of good quality, with transmittance as high as 85%. The ZnS layers were found not only to antireflect the Ag layer, but also to stabilize the ZnS/ Cu/ ZnS films, improve its adherence on glass and increase the film thermal resistance up to 240 C. The influence of annealing on the optical properties was investigated. The experimental results show that the properties of the multilayers are improved with annealing in air. the change of maximum transmission indicates that, with the increase of annealing temperature, maximum transmittance was change. Multilayer films annealed at after 200 C, show a decrease in the maximum transmittance witch might be due to the diffused Cu atoms onto ZnS layer. (author)

Reduction of crystallization temperature of the Nd-Fe-B thin films by Cu addition

International Nuclear Information System (INIS)

Ma Yungui; Yang Zheng; Matsumoto, M.; Morisako, A.; Takei, S.

2004-01-01

Nonmagnetic Cu element has been doped into the sputtered Nd-Fe-B thin films. It is found that the introduction of suitable amount of copper atoms could reduce the crystallization temperature of the 2:14:1 phase by near 100 deg. C, compared with that without Cu. For the 15 nm Nd 16 Fe 70.2 Cu 1.8 B 12 film deposited at 340 deg. C, perpendicular coercivity and remanent magnetization ratio of 350 kA/m and 0.96 have been successfully obtained. Cu addition would lead to the grain growth, but the average grain size in the films could be greatly decreased through lowering the deposition temperature. These results are compared with those found in the fabrication of FePtCu films

Characteristics of CuInSe sub 2 thin films grown by the selenization method

CERN Document Server

Kim, S D; Adurodija, F O; Yoon, K H; Song, J S

1999-01-01

CuInSe sub 2 thin films were formed from a selenization of co-sputtered Cu-In alloy layers which consisted of only two phases, CuIn sub 2 and Cu sub 1 sub 1 In sub 9. A linear dependence of the Cu-In alloy film composition on the Cu/In sputtering power was found. The metallic layers were selenized in vacuum or at 1 atm. A small number of Cu-Se and In-Se compounds was observed during the early stage of selenization, and single-phase CuInSe sub 2 was more easily formed in vacuum than at atmospheric pressure. Therefore, CuInSe sub 2 films selenized in vacuum showed larger grain sizes, smoother surfaces, and denser microstructures than those selenized at 1 atm.

Highly absorbing Cu-In-O thin films for photovoltaic applications

International Nuclear Information System (INIS)

Khemiri, N.; Chaffar Akkari, F.; Kanzari, M.; Rezig, B.

2008-01-01

We report in this paper on the preparation and characterization of improved quality Cu-In-O films for use as a high-efficiency solar cell absorber. Samples were prepared via sequential thermal vacuum deposition of Cu and In or In and Cu (at 10 -5 mbar) on glass substrates heated at 150 deg. C. After what, the obtained binary systems (Cu/In or In/Cu) were annealed in air at 400 deg. C for 3h. These films were characterized for their structural, electrical and optical properties by using X-ray diffraction (XRD), electrical resistivity and optical (transmittance and reflectance) measurement techniques. The X-ray diffraction (XRD) patterns revealed the presence of CuO and In 2 O 3 phases. The absorption coefficient of Cu-In-O thin films (4.10 5 cm -1 ) is larger than 10 5 cm -1 for the In/Cu case and in the range of 10 4 -10 5 cm -1 for the Cu/In case in the visible spectral range. Direct optical band gaps of 1.40 and 1.52eV were found for the In/Cu and Cu/In cases, respectively. The complex dielectric constants of the Cu-In-O films have been calculated. It was found that the refractive index dispersion data obeyed the Wemple-Di Domenico single oscillator model, from which the dispersion parameters and the high-frequency dielectric constant were determined. The electric free carrier susceptibility and the ratio of the carrier concentration to the effective mass were estimated according to the model of Spitzer and Fan. The electrical measurements show a conversion from a metallic phase to the semiconductor phase by a switching in the electrical resistivity values at an annealing temperature of 275 deg. C. In both cases the samples were highly compensated

Optical spectroscopy, optical conductivity, dielectric properties and new methods for determining the gap states of CuSe thin films

International Nuclear Information System (INIS)

Sakr, G.B.; Yahia, I.S.; Fadel, M.; Fouad, S.S.; Romcevic, N.

2010-01-01

Research highlights: → The structural, optical dispersion parameters and the Raman spectroscopy have been studied for CuSe thin films. → X-ray diffraction results indicate the amorphous nature of the thermally evaporated CuSe thin films. → The refractive index shows an anomalous dispersion at the lower wavelength (absorption region) and a normal dispersion at the higher wavelengths (transparent region). → The refractive index dispersion obeys the single oscillator model proposed by Wemple and DiDomenico WDD model and the single oscillator parameters were determined. → The band gap of CuSe thin films was determined by three novel methods i.e. (relaxation time, real and imaginary dielectric constant and real and imaginary optical conductivity) which in a good agreement with the Tauc band gap value. - Abstract: The paper describes the structural and optical properties of CuSe thin films. X-ray diffraction pattern indicates that CuSe thin film has an amorphous structure. Transmittance T(λ) and reflectance R(λ) measurements in the wavelength range (300-1700 nm) were used to calculate the refractive index n(λ), the absorption index and the optical dispersion parameters according to Wemple and Didomenico WDD model. The dispersion curve of the refractive index shows an anomalous dispersion in the absorption region and a normal dispersion in the transparent region. The optical bandgap has been estimated and confirmed by four different methods. The value for the direct bandgap for the as-deposited CuSe thin film approximately equals 2.7 eV. The Raman spectroscopy was used to identify and quantify the individual phases presented in the CuSe films.

Tuning Bandgap of p-Type Cu2Zn(Sn, Ge)(S, Se)4 Semiconductor Thin Films via Aqueous Polymer-Assisted Deposition.

Science.gov (United States)

Yi, Qinghua; Wu, Jiang; Zhao, Jie; Wang, Hao; Hu, Jiapeng; Dai, Xiao; Zou, Guifu

2017-01-18

Bandgap engineering of kesterite Cu 2 Zn(Sn, Ge)(S, Se) 4 with well-controlled stoichiometric composition plays a critical role in sustainable inorganic photovoltaics. Herein, a cost-effective and reproducible aqueous solution-based polymer-assisted deposition approach is developed to grow p-type Cu 2 Zn(Sn, Ge)(S, Se) 4 thin films with tunable bandgap. The bandgap of Cu 2 Zn(Sn, Ge)(S, Se) 4 thin films can be tuned within the range 1.05-1.95 eV using the aqueous polymer-assisted deposition by accurately controlling the elemental compositions. One of the as-grown Cu 2 Zn(Sn, Ge)(S, Se) 4 thin films exhibits a hall coefficient of +137 cm 3 /C. The resistivity, concentration and carrier mobility of the Cu 2 ZnSn(S, Se) 4 thin film are 3.17 ohm·cm, 4.5 × 10 16 cm -3 , and 43 cm 2 /(V·S) at room temperature, respectively. Moreover, the Cu 2 ZnSn(S, Se) 4 thin film when used as an active layer in a solar cell leads to a power conversion efficiency of 3.55%. The facile growth of Cu 2 Zn(Sn, Ge)(S, Se) 4 thin films in an aqueous system, instead of organic solvents, provides great promise as an environmental-friendly platform to fabricate a variety of single/multi metal chalcogenides for the thin film industry and solution-processed photovoltaic devices.

Infrared refractive index of thin YBa2Cu3O7 superconducting films

International Nuclear Information System (INIS)

Zhang, Z.M.; Choi, B.I.; Le, T.A.; Flik, M.I.; Siegal, M.P.; Phillips, J.M.

1992-01-01

This work investigates whether thin-film optics with a constant refractive index can be applied to high-T c superconducting thin films. The reflectance and transmittance of YBa 2 Cu 3 O 7 films on LaAlO 3 substrates are measured using a Fourier-transform infrared spectrometer at wavelengths from 1 to 100 μm at room temperature. The reflectance of these superconducting films at 10K in the wavelength region from 2.5 to 25 μm is measured using a cryogenic reflectance accessory. The film thickness varies from 10 to 200 nm. By modeling the frequency-dependent complex conductivity in the normal and superconducting states and applying electromagnetic-wave theory, the complex refractive index of YBa 2 Cu 3 O 7 films is obtained with a fitting technique. It is found that a thickness-independent refractive index can be applied even to a 25nm film, and average values of the spectral refractive index for film thicknesses between 25 and 200 nm are recommended for engineering applications

Structure and photoelectrochemistry of silver-copper-indium-diselenide ((AgCu)InSe2) thin film

Science.gov (United States)

Zhang, Lin Rui; Li, Tong; Wang, Hao; Pang, Wei; Chen, Yi Chuan; Song, Xue Mei; Zhang, Yong Zhe; Yan, Hui

2018-02-01

In this work, silver (Ag) precursors with different thicknesses were sputtered on the surfaces of CuIn alloys, and (AgCu)InSe2 (ACIS) films were formed after selenization at 550 °C under nitrogen condition using a rapid thermal process furnace. The structure and electrical properties of the ACIS films were investigated. The result showed that the distribution of Ag+ ion was more uniform with increasing the thickness of Ag precursor, and the surface of the thin-film became more homogeneous and denser. When Ag/Cu ratio ≥0.249, the small grain particles disappeared. The band gap can be rationally controlled by adjusting Ag content. When (Ag + Cu)/In ratio ≥ 1.15, the surface of the ACIS thin-film mainly exhibited n-type semiconductor. Through the photoelectrochemistry measurement, it was observed that the incorporation of Ag+ ions could improve photocurrent by adjusting the band gap. With the Ag precursor thickness increased, the dark current decreased at the more negative potential.

Growth and properties of CuInS2 thin films

International Nuclear Information System (INIS)

Agarwal, M.K.; Patel, P.D.; Chaki, Sunil H.; Lakshminarayana, D.

1998-01-01

Single phase copper indium disulphide (CuInS 2 ) thin films of thickness between 60 nm and 650 nm with the chalcopyrite structure are obtained on NaCl and glass substrates by flash evaporation. The films were found to be n-type semiconducting. The influence of the substrate temperature on the crystallinity, conductivity, activation energy and optical band gap was studied. An improvement in the film properties could be achieved up to a temperature of 523 K at a molybdenum source temperature of 1873 K. (author)

Photon induced facile synthesis and growth of CuInS{sub 2} absorber thin film for photovoltaic applications

Energy Technology Data Exchange (ETDEWEB)

Singh, Manjeet, E-mail: msitbhu@gmail.com [Department of Physics, Incheon National University, 12-1, Songdo-dong, Yeonsu-gu, Incheon 406-772 (Korea, Republic of); Jiu, Jinting; Suganuma, Katsuaki [Department of Advanced Interconnection Materials, Institute of Scientific and Industrial Research, Osaka University, Mihogaoka 8-1, Ibaraki, Osaka, 567-0047 (Japan)

2016-04-30

Graphical abstract: The thin film containing CuS and In{sub 2}S{sub 3} can be converted into CuInS{sub 2} by irradiation of intense pulses of light. - Highlights: • Photonic sintering technique is demonstrated for CuInS{sub 2} (CIS) thin film preparation. • The binary sulfides CuS and In{sub 2}S{sub 3} are converted into CIS using intense light pulses. • The light energy of 706 mJ/cm{sup 2} is found best for phase pure CIS film formation. - Abstract: In this paper, we demonstrate the use of high intensity pulsed light technique for the synthesis of phase pure CuInS{sub 2} (CIS) thin film at room temperature. The intense pulse of light is used to induce sintering of binary sulfides CuS and In{sub 2}S{sub 3} to produce CIS phase without any direct thermal treatment. Light energy equivalent to the 706 mJ/cm{sup 2} is found to be the best energy to convert the CIS precursor film deposited at room temperature into CIS pure phase and well crystalline film. The CIS absorber film thus prepared is useful in making printed solar cell at room temperature on substrate with large area.

Progress in Thin Film Solar Cells Based on Cu2ZnSnS4

Directory of Open Access Journals (Sweden)

Hongxia Wang

2011-01-01

Full Text Available The research in thin film solar cells has been dominated by light absorber materials based on CdTe and Cu(In,GaSe2 (CIGS in the last several decades. The concerns of environment impact of cadmium and the limited availability of indium in those materials have driven the research towards developing new substitute light absorbers made from earth abundant, environment benign materials. Cu2ZnSnS4 (CZTS semiconductor material has emerged as one of the most promising candidates for this aim and has attracted considerable interest recently. Significant progress in this relatively new research area has been achieved in the last three years. Over 130 papers on CZTS have been published since 2007, and the majority of them are on the preparation of CZTS thin films by different methods. This paper, will review the wide range of techniques that have been used to deposit CZTS semiconductor thin films. The performance of the thin film solar cells using the CZTS material will also be discussed.

High-Performance Ink-Synthesized Cu-Gate Thin-Film Transistor with Diffusion Barrier Formation

Science.gov (United States)

Woo, Whang Je; Nam, Taewook; Oh, Il-Kwon; Maeng, Wanjoo; Kim, Hyungjun

2018-05-01

The improved electrical properties of Cu-gate thin-film transistors (TFTs) using an ink-synthesizing process were studied; this technology enables a low-cost and large area process for the display industry. We investigated the film properties and the effects of the ink-synthesized Cu layer in detail with respect to device characteristics. The mobility and reliability of the devices were significantly improved by applying a diffusion barrier at the interface between the Cu gate and the gate insulator. By using a TaN diffusion barrier layer, considerably improved and stabilized ink-Cu gated TFTs could be realized, comparable to sputtered-Cu gated TFTs under positive bias temperature stress measurements.

High-Performance Ink-Synthesized Cu-Gate Thin-Film Transistor with Diffusion Barrier Formation

Science.gov (United States)

Woo, Whang Je; Nam, Taewook; Oh, Il-Kwon; Maeng, Wanjoo; Kim, Hyungjun

2018-02-01

The improved electrical properties of Cu-gate thin-film transistors (TFTs) using an ink-synthesizing process were studied; this technology enables a low-cost and large area process for the display industry. We investigated the film properties and the effects of the ink-synthesized Cu layer in detail with respect to device characteristics. The mobility and reliability of the devices were significantly improved by applying a diffusion barrier at the interface between the Cu gate and the gate insulator. By using a TaN diffusion barrier layer, considerably improved and stabilized ink-Cu gated TFTs could be realized, comparable to sputtered-Cu gated TFTs under positive bias temperature stress measurements.

Electrochemical growth and studies of CuInSe2 thin films

International Nuclear Information System (INIS)

Prasher, Dixit; Chandel, Tarun; Rajaram, Poolla

2014-01-01

Thin films of CuInSe 2 were grown on fluorine doped tin oxide (<10 Ω/□) coated glass using the electrodeposition technique. The electrodeposition was carried out potentiostatically using an aqueous bath consisting of solutions of CuCl 2 , InCl 3 and SeO 2 with ethylenediamine-dihydrochloride (EDC) added for complexation. CuInSe 2 films were also deposited without using any complexing agent in the bath. To improve the crystallinity the CuInSe 2 films were annealed in vaccum at 300 °C for one hour. The annealed films were analyzed by x-ray diffraction, transmission electron microscopy (TEM), scanning electron microscopy (SEM), energy dispersive analysis of x-rays (EDAX), atomic force microscopy (AFM) and optical spectra. The results obtained in this work show that by adding a suitable complexing agent to the electrochemical bath, nanocrystalline CuInSe 2 , 20 nm to 30 nm in size, can be grown. The composition of the CuInSe 2 films can be controlled by means of the bath composition and stoichiometric films can be obtained for a bath with ionic Cu:In:Se composition close to 1:4:2. AFM micrographs show that the particles are generally oval shaped for near stoichiometric compositions. However for extreme copper rich layers, the morphology is completely different, the particles in this case appearing in the form of nanoflakes. Each flake has a thickness in the nano range, but the surface extends to a length of several microns. (papers)

Physical characterization of Cu{sub 2}ZnGeSe{sub 4} thin films from annealing of Cu-Zn-Ge precursor layers

Energy Technology Data Exchange (ETDEWEB)

Buffière, M., E-mail: buffiere@imec.be [Imec—Partner in Solliance, Leuven (Belgium); Department of Electrical Engineering (ESAT), KU Leuven, Heverlee (Belgium); ElAnzeery, H. [Imec—Partner in Solliance, Leuven (Belgium); KACST-Intel Consortium Center of Excellence in Nano-manufacturing Applications (CENA), Riyadh (Saudi Arabia); Microelectronics System Design department, Nile University, Cairo (Egypt); Oueslati, S.; Ben Messaoud, K. [Imec—Partner in Solliance, Leuven (Belgium); KACST-Intel Consortium Center of Excellence in Nano-manufacturing Applications (CENA), Riyadh (Saudi Arabia); Department of Physics, Faculty of Sciences of Tunis, El Manar (Tunisia); Brammertz, G.; Meuris, M. [Imec Division IMOMEC — Partner in Solliance, Diepenbeek (Belgium); Institute for Material Research (IMO) Hasselt University, Diepenbeek (Belgium); Poortmans, J. [Imec—Partner in Solliance, Leuven (Belgium); Department of Electrical Engineering (ESAT), KU Leuven, Heverlee (Belgium)

2015-05-01

Cu{sub 2}ZnGeSe{sub 4} (CZGeSe) can be considered as a potential alternative for wide band gap thin film devices. In this work, CZGeSe thin films were deposited on Mo-coated soda lime glass substrates by sequential deposition of sputtered Cu, Zn and e-beam evaporated Ge layers from elemental targets followed by annealing at high temperature using H{sub 2}Se gas. We report on the effect of the precursor stack order and composition and the impact of the annealing temperature on the physical properties of CZGeSe thin films. The optimal layer morphology was obtained when using a Mo/Cu/Zn/Ge precursor stack annealed at 460 °C. We have observed that the formation of secondary phases such as ZnSe can be prevented by tuning the initial composition of the stack, the stack order and the annealing conditions. This synthesis process allows synthesizing CZGeSe absorber with an optical band gap of 1.5 eV. - Highlights: • Cu{sub 2}ZnGeSe{sub 4} (CZGeSe) thin films were deposited using a two-step process. • CZGeSe dense layers were obtained using a Mo/Cu/Zn/Ge precursor annealed at 460 °C. • Formation of ZnSe can be avoided by tuning the composition and order of the initial stack. • P-type CZGeSe absorber with an optical band gap of 1.5 eV was obtained.

Deposition of Cu-doped PbS thin films with low resistivity using DC sputtering

Science.gov (United States)

Soetedjo, Hariyadi; Siswanto, Bambang; Aziz, Ihwanul; Sudjatmoko

2018-03-01

Investigation of the electrical resistivity of Cu-doped PbS thin films has been carried out. The films were prepared using a DC sputtering technique. The doping was achieved by introducing the Cu dopant plate material directly on the surface of the PbS sputtering target plate. SEM-EDX data shows the Cu concentration in the PbS film to be proportional to the Cu plate diameter. The XRD pattern indicates the film is in crystalline cubic form. The Hall effect measurement shows that Cu doping yields an increase in the carrier concentration to 3.55 × 1019 cm-3 and a significant decrease in electrical resistivity. The lowest resistivity obtained was 0.13 Ωcm for a Cu concentration of 18.5%. Preferential orientation of (1 1 1) and (2 0 0) occurs during deposition.

Alloy-dependent deformation behavior of highly ductile nanocrystalline AuCu thin films

International Nuclear Information System (INIS)

Lohmiller, Jochen; Spolenak, Ralph; Gruber, Patric A.

2014-01-01

Nanocrystalline thin films on compliant substrates become increasingly important for the development of flexible electronic devices. In this study, nanocrystalline AuCu thin films on polyimide substrate were tested in tension while using a synchrotron-based in situ testing technique. Analysis of X-ray diffraction profiles allowed identifying the underlying deformation mechanisms. Initially, elastic and microplastic deformation is observed, followed by dislocation-mediated shear band formation, and eventually macroscopic crack formation. Particularly the influence of alloy composition, heat-treatment, and test temperature were investigated. Generally, a highly ductile behavior is observed. However, high Cu concentrations, annealing, and/or large plastic strains lead to localized deformation and hence reduced ductility. On the other hand, enhanced test temperature allows for a delocalized deformation and extended ductility

Alloy-dependent deformation behavior of highly ductile nanocrystalline AuCu thin films

Energy Technology Data Exchange (ETDEWEB)

Lohmiller, Jochen [Karlsruhe Institute of Technology, Institute for Applied Materials, P.O. Box 3640, 76021 Karlsruhe (Germany); Laboratory for Nanometallurgy, Department of Materials, ETH Zurich, Wolfgang-Pauli-Str. 10, 8093 Zurich (Switzerland); Spolenak, Ralph [Laboratory for Nanometallurgy, Department of Materials, ETH Zurich, Wolfgang-Pauli-Str. 10, 8093 Zurich (Switzerland); Gruber, Patric A., E-mail: patric.gruber@kit.edu [Karlsruhe Institute of Technology, Institute for Applied Materials, P.O. Box 3640, 76021 Karlsruhe (Germany)

2014-02-10

Nanocrystalline thin films on compliant substrates become increasingly important for the development of flexible electronic devices. In this study, nanocrystalline AuCu thin films on polyimide substrate were tested in tension while using a synchrotron-based in situ testing technique. Analysis of X-ray diffraction profiles allowed identifying the underlying deformation mechanisms. Initially, elastic and microplastic deformation is observed, followed by dislocation-mediated shear band formation, and eventually macroscopic crack formation. Particularly the influence of alloy composition, heat-treatment, and test temperature were investigated. Generally, a highly ductile behavior is observed. However, high Cu concentrations, annealing, and/or large plastic strains lead to localized deformation and hence reduced ductility. On the other hand, enhanced test temperature allows for a delocalized deformation and extended ductility.

Magnetic and structural properties of ion beam sputtered Fe–Zr–Nb–B–Cu thin films

International Nuclear Information System (INIS)

Modak, S.S.; Kane, S.N.; Gupta, A.; Mazaleyrat, F.; LoBue, M.; Coisson, M.; Celegato, F.; Tiberto, P.; Vinai, F.

2012-01-01

Magnetic and structural properties of Fe–Zr–Nb–B–Cu thin films, prepared by ion beam sputtering on silicon substrates by using a target made up of amorphous ribbons of nominal composition Fe 84 Zr 3.5 Nb 3.5 B 8 Cu 1 , are reported. As-deposited thin film samples exhibit an in-plane uniaxial anisotropy, which can be ascribed to the preparation technique and the coupling of quenched-in internal stresses. Structural measurements indicate no significant variation of the grain size with thickness and with the annealing temperature. Increase in surface irregularities with annealing temperature and oxidation results in aggregates that would act as pinning centers, affecting the magnetic properties leading to magnetic hardening of the specimens. The role of the magnetic anisotropy is thoroughly discussed with the help of magnetic and ferromagnetic resonance measurements. - Highlights: ►Ion beam sputtered Fe–Zr–Nb–B–Cu thin films of different thickness are prepared. ►Films exhibit in-plane uniaxial anisotropy, which reduces with thermal treatments. ►Increased surface roughness leads to wall pinning, increasing the coercive field.

Electron-gun Evaporation of Cu and In thin Films as Precursors for CuInSe, Formation

International Nuclear Information System (INIS)

Caballero, R.; Guillen, C.

2001-01-01

In the present invigorations CuInSe, is obtained in two stages: sequential evaporation of Cu and In using an electron gun evaporator on substrates up to 30 x 30 cm 2 , and a posterior selenization of the deposited films. The study is mainly focused on the first stage, in where the control of the different evaporation parameters of the metal precursors is essential. Electrical measurements are carried out, and also the topography and the thickness are determined with the object of studying the properties and homogeneity of the thin films. (Author) 19 refs

Experimental study of the plasma fluorination of Y-Ba-Cu-O thin films

CERN Document Server

Li Qi; Ji Zheng Ming; Feng Yi Jun; Kang Lin; Yang Sen Zu; Wu Pei Heng; Wang Xiao Shu; Ye Yuda

2002-01-01

The authors have experimentally studied the surface modifications of Y-Ba-Cu-O (YBCO) thin films using CF sub 4 plasma. The intensity of the plasma fluorination was controlled by changing the biasing voltage and the time of the plasma treatment. Microstructural analyses reveal that the oxygen content of the YBCO thin films was changed. Transport measurements of sufficient fluorinated YBCO films imply that the films changed totally into an oxygen-deficient semi-conducting state. From these experimental results, the authors believe that plasma fluorination is quite a useful method to form controllable a thin barrier layer in fabricating interface engineered junctions and to form a stable narrow weak-link region in fabricating planar superconductor-normal-superconductor junctions

High-frequency properties of superconducting Y-Ba-Cu-oxide thin films

International Nuclear Information System (INIS)

Ramakrishnan, E.S.; Su, M.; Howng, W.

1992-01-01

rf and microwave properties of superconducting YBa 2 Cu 3 O 7-x thin films were measured and analyzed using a coplanar resonator structure. The films were developed by sequential electron-beam evaporation of the metals followed by postanneal processing. dc properties of the films were obtained from resistance-temperature and current-voltage measurements to evaluate the transition temperature and current densities. High-frequency properties were measured from 70 to 10 K and in the frequency range 1--3 GHz to determine the film characteristics as compared to pure copper films on the same substrates

The Effects of Film Thickness and Evaporation Rate on Si-Cu Thin Films for Lithium Ion Batteries.

Science.gov (United States)

Polat, B Deniz; Keles, Ozgul

2015-12-01

The reversible cyclability of Si based composite anodes is greatly improved by optimizing the atomic ratio of Si/Cu, the thickness and the evaporation rates of films fabricated by electron beam deposition method. The galvanostatic test results show that 500 nm thick flim, having 10%at. Cu-90%at. Si, deposited with a moderate evaporation rate (10 and 0.9 Å/s for Si and Cu respectively) delivers 2642.37 mAh g(-1) as the first discharge capacity with 76% Coulombic efficiency. 99% of its initial capacity is retained after 20 cycles. The electron conductive pathway and high mechanical tolerance induced by Cu atoms, the low electrical resistivity of the film due to Cu3Si particles, and the homogeneously distributed nano-sized/amorphous particles in the composite thin film could explain this outstanding electrochemical performance of the anode.

Preparation and characterization of co-evaporated Cu{sub 2}ZnGeSe{sub 4} thin films

Energy Technology Data Exchange (ETDEWEB)

Uday Bhaskar, P.; Suresh Babu, G.; Kishore Kumar, Y.B.; Sundara Raja, V., E-mail: sundararajav@rediffmail.com

2013-05-01

Cu{sub 2}ZnGeSe{sub 4} (CZGSe), a member of Cu{sub 2}–II–IV–VI{sub 4} family, is a promising material for solar cell absorber layer in thin film heterojunction solar cells like Cu{sub 2}ZnSnS{sub 4} and Cu{sub 2}ZnSnSe{sub 4} which have been explored in recent years as alternate to CuInGaSe{sub 2} solar cells. The effect of substrate temperature (523 K–723 K) on the growth of CZGSe films is investigated by studying their structural, morphological and optical properties. Raman spectroscopy studies have been done to identify the phases in addition to X-ray diffraction studies. CZGSe films deposited at different substrate temperatures and annealed at 723 K in selenium atmosphere are Cu-rich and Ge-poor and contained secondary phases Cu{sub (2−x)}Se and ZnSe. CZGSe films obtained by reducing the starting Cu mass by 10% were found to be single phase with stannite structure, the lattice parameters being a = 0.563 nm, c = 1.101 nm. The direct optical band gap of CZGSe films is found to be 1.63 eV which is close to ideal band gap of 1.50 eV for the highest photovoltaic conversion efficiency. The films are found to be p-type. - Highlights: • Synthesis of Cu{sub 2}ZnGeSe{sub 4} films for solar cell absorber layer • Effect of substrate temperature on the growth of co-evaporated Cu{sub 2}ZnGeSe{sub 4} films • X-ray diffraction, Raman and morphological studies of Cu{sub 2}ZnGeSe{sub 4} thin films.

Thin film solar cells from earth abundant materials growth and characterization of Cu2(ZnSn)(SSe)4 thin films and their solar cells

CERN Document Server

Kodigala, Subba Ramaiah

2013-01-01

The fundamental concept of the book is to explain how to make thin film solar cells from the abundant solar energy materials by low cost. The proper and optimized growth conditions are very essential while sandwiching thin films to make solar cell otherwise secondary phases play a role to undermine the working function of solar cells. The book illustrates growth and characterization of Cu2ZnSn(S1-xSex)4 thin film absorbers and their solar cells. The fabrication process of absorber layers by either vacuum or non-vacuum process is readily elaborated in the book, which helps for further developm

Synthesis, structure and magnetic properties of crystallographically aligned CuCr_2Se_4 thin films

International Nuclear Information System (INIS)

Esters, Marco; Liebig, Andreas; Ditto, Jeffrey J.; Falmbigl, Matthias; Albrecht, Manfred; Johnson, David C.

2016-01-01

We report the low temperature synthesis of highly textured CuCr_2Se_4 thin films using the modulated elemental reactant (MER) method. The structure of CuCr_2Se_4 is determined for the first time in its thin film form and exhibits cell parameters that are smaller than found in bulk CuCr_2Se_4. X-ray diffraction and precession electron diffraction show a strong degree of crystallographic alignment of the crystallites, where the axis is oriented perpendicular to the substrate surface, while being rotationally disordered within the plane. Temperature and field dependent in-plane and out-of-plane magnetization measurements show that the film is ferromagnetic with a Curie temperature of 406 K CuCr_2Se_4 synthesized utilizing the MER method shows stronger magnetic anisotropy (effective anisotropy: 1.82 × 10"6 erg cm"−"3; shape anisotropy: 1.07 × 10"6 erg cm"−"3), with the easy axis lying out of plane, and a larger magnetic moment (6 μ_B/f.u.) than bulk CuCr_2Se_4. - Highlights: • Crystallographically aligned, phase pure CuCr_2Se_4 were synthesized. • The degree of alignment decreases with annealing time. • The films are ferromagnetic with the easy axis along the direction. • The magnetization is larger than bulk CuCr_2Se_4 or other CuCr_2Se_4 films made to date.

Bi-Sr-Ca-Cu-O superconducting thin films: theory and experiment

Energy Technology Data Exchange (ETDEWEB)

Yavuz, M [Department of Mechanical Engineering and Mechatronics Engineering Program, University of Waterloo, Waterloo, Ontario N2L 3G1 (Canada); Boybay, M S [Department of Mechanical Engineering and Mechatronics Engineering Program, University of Waterloo, Waterloo, Ontario N2L 3G1 (Canada); Elbuken, C [Department of Mechanical Engineering and Mechatronics Engineering Program, University of Waterloo, Waterloo, Ontario N2L 3G1 (Canada); Andrews, M J [Los Alamos National Lab, PO Box 1663, Mail Stop B 296, Los Alamos, NM 87545 (United States); Hu, C R [Department of Physics, Texas A and M University, College Station, Texas 77843 (United States); Ross, J H [Department of Physics, Texas A and M University, College Station, Texas 77843 (United States)

2006-06-01

The interest of this paper centers on fabrication and characterization and modeling of vortices in high temperature superconducting thin films. As a first step, the magnetic vertices of the superconducting matrix were modeled. As a second, Bi-Sr-Ca-Cu-O thin films were grown using Pulsed Laser Ablation (PLD) on single crystal MgO substrates as magnetic templates for the potential use for Nano and Microelectronic circuits, and were characterized by x-ray diffraction, electron, and atomic force microscopy. The third step (future work) will be observation and pinning of these vortices using Bitter decoration.

Electrochemical preparation and characterization of CuInSe2 thin films for photovoltaic applications

International Nuclear Information System (INIS)

Guillen Arqueros, C.

1992-01-01

The objective of this work has been to investigate the electrodeposition as a low-cost, large-area fabrication process to obtain CuInSe 2 this films for efficient photovoltaic devices. this objective entails the elucidation of thin film deposition mechanism, the study of the fundamental properties of electrodeposited material, and also the modification of their physical and chemical parameters for photovoltaic applications. CuInSe 2 thin films have been successfully electrodeposited from a citric was characterized by compositional, structural, electrical, optical and electrochemical measurements, relating their properties with the preparation parameters and also studying the effect of various thermal and chemical treatments. The results showed post-deposition treatment are needed for optimizing these films for solar cells fabrication: first, an annealing in inert atmosphere at temperatures above 400 degrees celsius to obtain a high recrystallization in the chalcopyrite structure, and after a chemical etching in KCN solution to remove secondary phases of Cu x Se and Se which are frequently electrodeposited with the CuInSe 2 . The treated samples showed appropriate photovoltaic activity in a semiconductor-electrolite liquid junction. (author) 193 ref

The crystallisation of Cu2ZnSnS4 thin film solar cell absorbers from co-electroplated Cu-Zn-Sn precursors

International Nuclear Information System (INIS)

Schurr, R.; Hoelzing, A.; Jost, S.; Hock, R.; Voss, T.; Schulze, J.; Kirbs, A.; Ennaoui, A.; Lux-Steiner, M.; Weber, A.; Koetschau, I.; Schock, H.-W.

2009-01-01

The best CZTS solar cell so far was produced by co-sputtering continued with vapour phase sulfurization method. Efficiencies of up to 5.74% were reached by Katagiri et al. The one step electrochemical deposition of copper, zinc, tin and subsequent sulfurization is an alternative fabrication technique for the production of Cu 2 ZnSnS 4 based thin film solar cells. A kesterite based solar cell (size 0.5 cm 2 ) with a conversion efficiency of 3.4% (AM1.5) was produced by vapour phase sulfurization of co-electroplated Cu-Zn-Sn films. We report on results of in-situ X-ray diffraction (XRD) experiments during crystallisation of kesterite thin films from electrochemically co-deposited metal films. The kesterite crystallisation is completed by the solid state reaction of Cu 2 SnS 3 and ZnS. The measurements show two different reaction paths depending on the metal ratios in the as deposited films. In copper-rich metal films Cu 3 Sn and CuZn were found after electrodeposition. In copper-poor or near stoichiometric precursors additional Cu 6 Sn 5 and Sn phases were detected. The formation mechanism of Cu 2 SnS 3 involves the binary sulphides Cu 2-x S and SnS 2 in the absence of the binary precursor phase Cu 6 Sn 5 . The presence of Cu 6 Sn 5 leads to a preferred formation of Cu 2 SnS 3 via the reaction educts Cu 2-x S and SnS 2 in the presence of a SnS 2 (Cu 4 SnS 6 ) melt. The melt phase may be advantageous in crystallising the kesterite, leading to enhanced grain growth in the presence of a liquid phase

Growth of Cu2O on Ga-doped ZnO and their interface energy alignment for thin film solar cells

International Nuclear Information System (INIS)

Wong, L. M.; Chiam, S. Y.; Wang, S. J.; Pan, J. S.; Huang, J. Q.; Chim, W. K.

2010-01-01

Cu 2 O thin films are deposited by direct current reactive magnetron sputtering on borofloat glass and indium tin oxide (ITO) coated glass at room temperature. The effect of oxygen partial pressure on the structures and properties of Cu 2 O thin films are investigated. We show that oxygen partial pressure is a crucial parameter in achieving pure phases of CuO and Cu 2 O. Based on this finding, we fabricate heterojunctions of p-type Cu 2 O with n-type gallium doped ZnO (GZO) on ITO coated glass substrates by pulsed laser deposition for GZO thin films. The energy band alignment for thin films of Cu 2 O/GZO on ITO glass is characterized using high-resolution x-ray photoelectron spectroscopy. The energy band alignment for the Cu 2 O/GZO heterojunctions is determined to be type II with a valence band offset of 2.82 eV and shows negligible effects of variation with gallium doping. The higher conduction band of the Cu 2 O relative to that of GZO in the obtained band alignment shows that the heterojunctions are suitable for solar cell application based on energy levels consideration.

Characterization of carrier states in CuWO₄ thin-films at elevated temperatures using conductometric analysis

Energy Technology Data Exchange (ETDEWEB)

Gonzalez, Carlos M., E-mail: carlosmiguelgg@yahoo.com [Energy Mining and Environment Portfolio, National Research Council of Canada, 1200 Montreal Road, Ottawa, Ontario, Canada, K1A 0R6 (Canada); Dunford, Jeffrey L.; Du, Xiaomei; Post, Michael L. [Energy Mining and Environment Portfolio, National Research Council of Canada, 1200 Montreal Road, Ottawa, Ontario, Canada, K1A 0R6 (Canada)

2013-05-01

CuWO₄ thin-films were deposited by pulsed laser deposition onto an insulating substrate. The temperature dependence of the electronic conductivity of CuWO₄ thin-films was determined over 100–500 °C temperature range in a synthetic air atmosphere. Additionally, variations of conductivity at 300 °C and 500 °C have been measured for oxygen partial pressures (0.1 atmCuWO₄ thin-films reveals the operation of two temperature-dependent oxygen states. The effect of varying oxygen concentration on the electronic properties is discussed in detail. The electrochemical nature of the operating oxygen states for 100–500 °C temperature range is deduced using a physicochemical model that relates electronic conductivity with oxygen partial pressure and temperature. - Graphical abstract: Formation of oxygen states in n-type semiconducting metal-oxides and its effect on the surface electrochemical potential and electron transport. Highlights: • The study of surface species in CuWO₄ thin-films was carried using conductometry. • The determination of the apparent activation energy of conduction with temperature is outlined. • Temperature and O₂ concentration effects on the oxygen states was established. • For the ranges of temperature studied, the identified operating oxygen states were O₂⁻ and O⁻.

Cu2ZnSnS4 thin films grown by flash evaporation and subsequent annealing in Ar atmosphere

International Nuclear Information System (INIS)

Caballero, R.; Izquierdo-Roca, V.; Merino, J.M.; Friedrich, E.J.; Climent-Font, A.; Saucedo, E.; 2UB, Departament d'Electrònica, Universitat de Barcelona, C. Martí i Franquès 1, E-08028 Barcelona (Spain))" data-affiliation=" (IREC, Catalonia Institute for Energy Research, C. Jardins de les Dones de Negre 1, Sant Adriá del Besòs, E-08930 Barcelona (Spain); IN2UB, Departament d'Electrònica, Universitat de Barcelona, C. Martí i Franquès 1, E-08028 Barcelona (Spain))" >Pérez-Rodríguez, A.; León, M.

2013-01-01

A study of Cu 2 ZnSnS 4 thin films grown by flash evaporation and subsequently annealed in Ar atmosphere has been carried out. Prior to thin film deposition, Cu 2 ZnSnS 4 bulk compounds with stoichiometric and Zn-rich compositions were synthesized as evaporation sources. The characteristics of the bulk compounds and thin films were investigated by X-ray diffraction, Raman spectroscopy, scanning electron microscopy and elastic back scattering. Cu 2 ZnSnS 4 deposited films contain lower concentrations of Zn than the bulk compounds used as evaporation sources, which is related to a preferential Zn re-evaporation during the deposition process. The desired kesterite composition for solar cell applications was achieved by using a Zn-rich compound as the evaporation source plus a thermal treatment at 620 °C in Ar atmosphere. - Highlights: ► Cu 2 ZnSnS 4 (CZTS) thin films by flash evaporation + annealing in Ar atmosphere ► Difficulty of growing a single phase kesterite material ► X-ray diffraction and Raman spectroscopy to identify the different phases ► Importance of the starting film composition to get the desired CZTS material ► Annealing treatment to obtain the optimum material to be used for CZTS solar cells

Amorphization reaction in thin films of elemental Cu and Y

Science.gov (United States)

Johnson, R. W.; Ahn, C. C.; Ratner, E. R.

1989-10-01

Compositionally modulated thin films of Cu and Y were prepared in an ultrahigh-vacuum dc ion-beam deposition chamber. The amorphization reaction was monitored by in situ x-ray-diffraction measurements. Growth of amorphous Cu1-xYx is observed at room temperature with the initial formation of a Cu-rich amorphous phase. Further annealing in the presence of unreacted Y leads to Y enrichment of the amorphous phase. Growth of crystalline CuY is observed for T=469 K. Transmission-electron-microscopy measurements provide real-space imaging of the amorphous interlayer and growth morphology. Models are developed, incorporating metastable interfacial and bulk free-energy diagrams, for the early stage of the amorphization reaction.

Photolithographically patterened thin-film multilayer devices of YBa2Cu3O7-x

International Nuclear Information System (INIS)

Kingston, J.J.; Wellstood, F.C.; Quan, D.; Clarke, J.

1990-09-01

We have fabricated thin-film YBa 2 Cu 3 O 7-x -SrTiO 3 -YBa 2 Cu 3 O 7-x multilayer interconnect structures in which each in situ laser-deposited film is independently patterned by photolithography. In particular, we have constructed the two key components necessary for a superconducting multilayer interconnect technology, crossovers and window contacts. As a further demonstration of the technology, we have fabricated a thin-film flux transformer, suitable for use with a Superconducting QUantum Interference Device (SQUID), that includes a ten-turn input coil with 6μm linewidth. Transport measurements showed that the critical temperature was 87K and the critical current was 135 μA at 82K. 7 refs., 6 figs

Formation of SmFe5(0001) ordered alloy thin films on Cu(111) single-crystal underlayers

International Nuclear Information System (INIS)

Yabuhara, Osamu; Ohtake, Mitsuru; Nukaga, Yuri; Futamoto, Masaaki; Kirino, Fumiyoshi

2010-01-01

SmFe 5 (0001) single-crystal thin films are prepared by molecular beam epitaxy employing Cu(111) single-crystal underlayers on MgO(111) substrates. The Cu atoms diffuse into the Sm-Fe layer and substitute the Fe sites in SmFe 5 structure forming an alloy compound of Sm(Fe,Cu) 5 . The Sm(Fe,Cu) 5 film is more Cu enriched with increasing the substrate temperature. The Cu underlayer plays an important role in assisting the formation of the ordered phase.

Effect of the ITO substrate on the growth of Cu(In,Ga)Se{sub 2}, CuGa{sub 3}Se{sub 5}, CuGa{sub 5}Se{sub 8} and CuIn{sub 3}Se{sub 5} thin films by flash evaporation

Energy Technology Data Exchange (ETDEWEB)

Friedrich, E J; Merino, J M; Leon, M [Department of Applied Physics, Universidad Autonoma de Madrid (UAM), Cantoblanco, 28049 Madrid (Spain); Trigo, J F; Guillen, C [Department of Energy, CIEMAT, Avda Complutense, 22, 28040 Madrid (Spain); Ramiro, J, E-mail: josue.friedrich@uam.e [Department of Theory of Signal and Communications, URJC, Campus Fuenlabrada, 122, 28943 Madrid (Spain)

2009-04-21

Structural, compositional, electrical and morphological properties of CuIn{sub 1-x}Ga{sub x}Se{sub 2} (x = 0.15, 0.30) and ordered defect compounds (ODC) CuGa{sub 3}Se{sub 5}, CuGa{sub 5}Se{sub 8}, CuIn{sub 3}Se{sub 5} thin films grown by flash evaporation onto soda lime glass substrates (SLG) and ITO/SLG have been studied. Polycrystalline thin films with accentuated preferential orientation in the (1 1 2) plane of the tetragonal structure have been obtained. Annealing in Se atmosphere improves the structural, morphological, electrical and optical properties of the evaporated films, but provokes the formation of a CuIn{sub x}Se{sub y} phase on the surface of the films. Band gap values ranging between 1.01 and 1.21 eV have been obtained for the as-grown CuIn{sub 1-x}Ga{sub x}Se{sub 2} thin films and between 1.09 and 2.01 eV for the CuGa{sub 3}Se{sub 5}, CuGa{sub 5}Se{sub 8} and CuIn{sub 3}Se{sub 5} thin films.

Sensors of the gas CO in thin film of SnO2:Cu

International Nuclear Information System (INIS)

Tirado G, S.; Sanchez Z, F. E.

2011-10-01

Thin films of SnO 2 :Cu with different thickness, were deposited on soda-lime glass substrates and prepared by the Sol-gel process and repeated immersion. The sensor properties of these films to the gas CO for the range of 0-200 ppm in the gas concentration and operating to temperatures of 23, 100, 200, and 300 C were studied. Prepared films of pure SnO 2 were modified superficially with 1, 3, 5 and 10 layers of the catalyst Cu (SnO 2 :Cu) with the purpose of studying the effect on the sensor capacity of the gas CO by part of the films SnO 2 :Cu. Using the changes in the electric properties of the films with the incorporation of the different copper layers and experimental conditions, the sensor modifications of the gas CO were evaluated. To complete this study, was realized a characterization of the superficial morphology of the films by scanning electron microscopy and atomic force microscopy, equally was studied their structure and their electric and optical properties. (Author)

Some physical parameters of CuInGaS_2 thin films deposited by spray pyrolysis for solar cells

International Nuclear Information System (INIS)

Kotbi, Ahmed; Hartiti, Bouchaib; Fadili, Salah; Ridah, Abderraouf; Thevenin, Philippe

2017-01-01

Copper-indium-gallium-disulphide (CuInGaS_2) is a promising absorber material for thin film photovoltaic. In this paper, CuInGaS_2 (CIGS) thin films have been prepared by chemical spray pyrolysis method onto glass substrates at ambient atmosphere. Structural, morphological, optical and electrical properties of CuInGaS_2 films were analysed by X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM), UV-Vis spectrophotometer and Hall Effect measurement, respectively. The films exhibited single phase chalcopyrite structure. The strain and dislocation density decreased with increase of spray time. The grain size of the films increased from 4.45 to 9.01 nm with increase of spray time. The Raman spectrum indicated the presence of the principal chalcopyrite peak at 295 cm"-"1. The optical properties of the synthesized films have been carried out through the measurement of the absorbance spectrum. The optical band gap was estimated by the absorption spectrum fitting (ASF) method. For each sample, the width of the band tail (E_T_a_i_l) of CuInGaS_2 thin films was determined. The resistivity (ρ), conductivity (σ), mobility (μ), carrier concentration and conduction type of the films were determined using Hall Effect measurements. The interesting optical properties of CuInGaS_2 make them an attractive material for photovoltaic devices. (orig.)

Analysis of the influence of structure on mechanical properties of multilayer Ni/Cu thin films for use in microelectronic technologies

Directory of Open Access Journals (Sweden)

Lamovec Jelena S.

2015-01-01

Full Text Available Multilayer Ni/Cu thin films were produced by dual-bath electrodeposition technique (DBT on polycrystalline cold-rolled Cu substrate. Different Ni/Cu multilayer structures were realized by changing of process parameters such as total film thickness, sublayer thickness and Ni/Cu sublayer thickness ratio. The mechanical properties of Vickers microhardness and interfacial adhesion in the films were investigated. Decreasing of sublayer thickness down to 300 nm and increasing of Ni:Cu sublayer thickness ratio to 1:4, lead to higher values of Vickers microhardness compared to monolayer metal films. Thin films with sublayer thicknesses from 75 nm to 5 μm show strong interfacial adhesion. A weak adhesion and sublayer exfoliation for the films with sublayer thickness greater than 5μm were found. Three-dimensional Ni microstructures can be fabricated using multilayer Ni/Cu film by selective etching of Cu layers in an acidic thiourea solution ('surface micromachining' technique.

Effects of the substrate temperature on the properties of CuIn5S8 thin films

International Nuclear Information System (INIS)

Gannouni, M.; Kanzari, M.

2011-01-01

Structural, optical and electrical properties of CuIn 5 S 8 thin films grown by thermal evaporation have been studied relating the effects of substrate heating conditions of these properties. The CuIn 5 S 8 thin films were carried out at substrate temperatures in the temperature range 100-300 deg. C. The effects of heated substrate on their physico-chemical properties were investigated using X-ray diffraction (XRD), energy-dispersive X-ray spectroscopy (EDX), optical transmission and hot probe method. X-ray diffraction revealed that the films are strong preferred orientation along the (3 1 1) plane upon substrate temperature 200 deg. C and amorphous for the substrate temperatures below 200 deg. C. No secondary phases are observed for all the films. The composition is greatly affected by heated substrate. From the optical transmission and reflection, an important absorption coefficient exceeds 10 5 cm -1 at 800 nm was found. As increasing the substrate temperature, the optical energy band gap decreases from 1.70 eV for the unheated films to 1.25 eV for the deposited films at 300 deg. C. It was found that CuIn 5 S 8 thin film is an n-type semiconductor at 250 deg. C.

First-principles-based study of transport properties of Fe thin films on Cu surfaces

Energy Technology Data Exchange (ETDEWEB)

Kishi, Tomoya [Department of Applied Physics, Osaka University, Suita, Osaka 565-0871 (Japan); Kasai, Hideaki [Department of Applied Physics, Osaka University, Suita, Osaka 565-0871 (Japan); Nakanishi, Hiroshi [Department of Applied Physics, Osaka University, Suita, Osaka 565-0871 (Japan); Dino, Wilson Agerico [Department of Applied Physics, Osaka University, Suita, Osaka 565-0871 (Japan); Komori, Fumio [Institute for Solid State Physics, University of Tokyo, Kashiwa, Chiba 277-8587 (Japan)

2004-12-08

We investigate the transport properties of Fe thin films on Cu(111) based on first principles calculation. We calculate the electron current through these Fe thin films, which can be observed by using a double-tipped scanning tunnelling microscope. We find that the conductance is majority spin polarized. On the basis of the band structures for this system, we discuss the origin of these interesting transport properties.

First-principles-based study of transport properties of Fe thin films on Cu surfaces

International Nuclear Information System (INIS)

Kishi, Tomoya; Kasai, Hideaki; Nakanishi, Hiroshi; Dino, Wilson Agerico; Komori, Fumio

2004-01-01

We investigate the transport properties of Fe thin films on Cu(111) based on first principles calculation. We calculate the electron current through these Fe thin films, which can be observed by using a double-tipped scanning tunnelling microscope. We find that the conductance is majority spin polarized. On the basis of the band structures for this system, we discuss the origin of these interesting transport properties

Optical response of Cu3Ge thin films

OpenAIRE

Aboelfotoh, M. O.; Guizzetti, G.; Marabelli, F.; Pellegrino, Paolo; Sassella, A.

1996-01-01

We report an investigation on the optical properties of Cu3Ge thin films displaying very high conductivity, with thickness ranging from 200 to 2000 Å, deposited on Ge substrates. Reflectance, transmittance, and ellipsometric spectroscopy measurements were performed at room temperature in the 0.01-6.0, 0.01-0.6, and 1.4-5.0 eV energy range, respectively. The complex dielectric function, the optical conductivity, the energy-loss function, and the effective charge density were obtained over the ...

Thickness characteristics of YBaCuO system thin films prepared by RF magnetron sputtering

International Nuclear Information System (INIS)

Furuhashi, Hideo; Jinno, Makoto; Takashima, Osamu; Uchida, Yoshiyuki; Maeda, Akinori; Kojima, Kenzo; Ochiai, Shizuyasu; Ohashi, Asao

1994-01-01

The practical use of oxide high temperature superconductors for electronics field has been advanced. The oxide high temperature superconductor thin films is very sensitive to the production conditions, and their making with good reproducibility is difficult. In this study, the method of producing the thin films having good quality with good reproducibility by RF magnetron sputtering, and the relation of the film thickness with the superconductivity characteristics of YBaCuO system thin films in the different methods of substrate washing were examined. The sputtering conditions are shown. For the purpose of preventing the worsening of the film quality due to the reverse sputtering of oxygen negative ions to the thin film surface, sputtering gas pressure was set up high at 30 Pa. The film thickness and the temperature-resistance characteristics were measured. The experimental method and the experimental results are reported. By keeping the temperature on substrate surfaces constant, the reproducibility in the production of the thin films was improved remarkably. The effect of substrate washing was large. (K.I.)

Fabrication and sulfurization of Cu{sub 2}SnS{sub 3} thin films with tuning the concentration of Cu-Sn-S precursor ink

Energy Technology Data Exchange (ETDEWEB)

Wang, Chi-Jie [Institute of Microelectronics & Department of Electrical Engineering, National Cheng Kung University, Taiwan (China); Shei, Shih-Chang, E-mail: scshei@mail.nutn.edu.tw [Department of Electrical Engineering, Nation University of Tainan, Taiwan (China); Chang, Shih-Chang [Department of Electrical Engineering, Nation University of Tainan, Taiwan (China); Chang, Shoou-Jinn [Institute of Microelectronics & Department of Electrical Engineering, National Cheng Kung University, Taiwan (China)

2016-12-01

Highlights: • Tuning the relative reaction rate of component phases proved to be beneficial in controlling the reaction process. • Low-concentration samples display closely packed Cu{sub 2}SnS{sub 3} grains with a flat morphology. • Optical band-gap energy measured at 1.346 eV suitable for thin-film solar cell applications. - Abstract: In this study, Cu-Sn-S nanoinks were synthesized by combining chelating polyetheramine to Cu, Sn, S powders of various concentrations. X-ray diffraction patterns indicate that nanoinks synthesized at low concentrations are composed almost entirely of binary phases SnS and Cu{sub 2}S. Synthesizing nanoinks at higher concentrations decreased the quantity of binary phase and led to the appearance of ternary phase Cu{sub 4}SnS{sub 4}. Following sulfurization, single phase Cu{sub 2}SnS{sub 3} (CTS) thin film was obtained from nanoinks of low concentration; however, impurities, such as Cu{sub 2}S were detected in the thin film obtained from nanoinks of high concentration. This can be attributed to the fact that lower concentrations reduce the reactivity of all the elements. As a result, the SnS phase reacted more readily and more rapidly, resulting in the early formation of a stoichiometric CTS thin film during sulfurization. Under these reaction conditions, Cu{sub 2}S and SnS transform into CTS and thereby prevent the formation of unwanted phases of Cu{sub 2}S and Cu{sub 4}SnS{sub 4}. Raman spectra revealed that second phase Cu{sub 2}S phase remained in the high-concentration samples, due to an increase in reactivity due to the participation of a greater proportion of the copper in the reaction. The surface microstructure of low-concentration samples display closely packed Cu{sub 2}SnS{sub 3} grains with a flat morphology and an atomic composition ratio of Cu:Sn:S = 34.69:15.90:49.41, which is close to stoichiometric. Hall measurement revealed that low-concentration sample has superior electrical properties; i.e., a hole

Superconducting Bi-Sr-Ca-Cu-O thin films from metallo-organic complexes

International Nuclear Information System (INIS)

Gruber, H.; Krautz, E.; Fritzer, H.P.; Popitsch, A.

1991-01-01

Thin films in the Bi-Sr-Ca-Cu-O system are produced by decomposition of organic precursor compounds containing different metallo-organic complexes. The superconducting phase identified is Bi 2 Sr 2 CaCu 2 O 8+x on (100)-MgO single crystal substrates, polycrystalline Au- and Ag-ribbons and Bi 2 Sr 2 Ca 2 Cu 3 O 10+x on Ag-ribbons. For the 2212-phase a zero resistance temperature of 79 K is found. The 2223-samples on Ag-ribbons show a broad transition at 110 K with a zero resistance at 85 K. SEM and EDX are used for the detection of the microstructure and composition of the prepared films. (orig.)

Electrochemical synthesis of nanoplatelets-like CuS0.2Se0.8 thin film for photoluminescence applications

Directory of Open Access Journals (Sweden)

Sharma A. K.

2015-06-01

Full Text Available Copper sulfide-selenide (CuS0.2Se0.8 thin films were deposited on FTO coated glass substrate (fluorine doped tin oxide and stainless steel substrates using electrodeposition technique. Deposited thin films were characterized using different characterization techniques viz. X-ray diffraction (XRD, scanning electron microscopy (SEM, UV-Vis spectroscopy, photoluminescence spectroscopy and surface wettability. XRD study showed polycrystalline nature with cubic phase of the films. Scanning electron microscopy showed that the surface area of the substrate was covered by the nanoplatelets structure of a thickness of 140 to 150 nm and optical study showed that the direct band gap was ~1.90 eV. Surface wettability showed hydrophobic nature of the CuS0.2Se0.8 thin films.

Study of optical properties of vacuum evaporated carbon nanotube containing Se80Te16Cu4 thin films

Science.gov (United States)

Upadhyay, A. N.; Tiwari, R. S.; Singh, Kedar

2016-08-01

Thin films of Se80Te16Cu4 glassy alloy and 3 wt.% of carbon nanotubes (CNTs) containing Se80Te16Cu4 glassy composite were deposited on clean glass substrate by thermal evaporation technique. The scanning electron microscope and energy dispersive x-ray analysis were performed to investigate the surface morphology and elemental composition of as synthesised samples. The reflectance and transmittance spectra of as-deposited thin films were recorded (200-1100 nm) by using UV/VIS/NIR spectrophotometer. The optical band gap and optical constants such as absorption coefficient (α), refractive index (n) and extinction coefficient (k) of Se80Te16Cu4 and 3 wt.% CNTs-Se80Te16Cu4 glassy composite thin films were calculated. It is observed that optical properties alter due to CNTs incorporation in Se80Te16Cu4 glassy alloy. Effect on optical properties due to CNTs incorporation can be explained in terms of concentration of unsaturated bonds/defects in the localised states.

Intense coherent longitudinal optical phonons in CuI thin films under exciton-excitation conditions

International Nuclear Information System (INIS)

Kojima, O.; Mizoguchi, K.; Nakayama, M..

2005-01-01

We have investigated the dynamical properties of the coherent longitudinal optical (LO) phonon in CuI thin films grown on a NaCl substrate by vacuum deposition. The intense coherent LO phonon in the CuI thin film is observed under the exciton-excitation conditions. Moreover, the pump-energy dependence of the amplitude of the coherent LO phonon shows peaks at the heavy-hole and light-hole exciton energies. The enhancement of the coherent LO phonon under the exciton-resonance condition is much larger than that in an ordinary semiconductor quantum well system such as a GaAs/AlAs one. These facts demonstrate that the intense coherent LO phonon is generated under the exciton-excitation condition in a material with a strong exciton-phonon interaction such as CuI

Structural, optical and electrical properties of CuIn{sub 5}S{sub 8} thin films grown by thermal evaporation method

Energy Technology Data Exchange (ETDEWEB)

Gannouni, M., E-mail: gm_mounir@yahoo.fr [Laboratoire de Photovoltaique et Materiaux Semi-conducteurs -ENIT BP 37, Le belvedere 1002-Tunis (Tunisia); Kanzari, M. [Laboratoire de Photovoltaique et Materiaux Semi-conducteurs -ENIT BP 37, Le belvedere 1002-Tunis (Tunisia)

2011-05-19

Highlights: > In this work, thin films of CuIn{sub 5}S{sub 8} were successfully deposited onto glass substrates by thermal evaporation and annealed in air. > Post-depositional annealing effects on structural, optical and electrical properties of thermal evaporated CuIn{sub 5}S{sub 8} thin films were studied. > The results reported in this work make this material attractive as an absorber material in solar cells applications. - Abstract: Stoichiometric compound of copper indium sulfur (CuIn{sub 5}S{sub 8}) was synthesized by direct reaction of high purity elemental copper, indium and sulfur in an evacuated quartz tube. The phase structure of the synthesized material revealed the cubic spinel structure. The lattice parameter (a) of single crystals was calculated to be 10.667 A. Thin films of CuIn{sub 5}S{sub 8} were deposited onto glass substrates under the pressure of 10{sup -6} Torr using thermal evaporation technique. CuIn{sub 5}S{sub 8} thin films were then thermally annealed in air from 100 to 300 deg. C for 2 h. The effects of thermal annealing on their physico-chemical properties were investigated using X-ray diffraction (XRD), Energy-dispersive X-ray spectroscopy (EDX), scanning electron microscope (SEM), optical transmission and hot probe method. XRD studies of CuIn{sub 5}S{sub 8} thin films showed that as-deposited films were amorphous in nature and transformed into polycrystalline spinel structure with strong preferred orientation along the (3 1 1) plane after the annealing at 200 deg. C. The composition is greatly affected by thermal treatment. From the optical transmission and reflection, an important absorption coefficient exceeds 10{sup 4} cm{sup -1} was found. As increasing the annealing temperature, the optical energy band gap decreases from 1.83 eV for the as-deposited films to 1.43 eV for the annealed films at 300 deg. C. It was found that CuIn{sub 5}S{sub 8} thin film is an n-type semiconductor at 300 deg. C.

Chemical solution deposition of CaCu 3 Ti 4 O 12 thin film

Indian Academy of Sciences (India)

CaCu3Ti4O12 (CCTO) thin film was successfully deposited on boron doped silica substrate by chemical solution deposition and rapid thermal processing. The phase and microstructure of the deposited films were studied as a function of sintering temperature, employing X-ray diffractometry and scanning electron ...

SURFACE MODIFICATION OF SEMICONDUCTOR THIN FILM OF TiO2 ON GRAPHITE SUBSTRATE BY Cu-ELECTRODEPOSITION

Directory of Open Access Journals (Sweden)

Fitria Rahmawati

2010-06-01

Full Text Available Surface modification of graphite/TiO2 has been done by mean of Cu electrodeposition. This research aims to study the effect of Cu electrodeposition on photocatalytic enhancing of TiO2. Electrodeposition has been done using CuSO4 0,4 M as the electrolyte at controlled current. The XRD pattern of modified TiO2 thin film on graphite substrate exhibited new peaks at 2θ= 43-44o and 2θ= 50-51o that have been identified as Cu with crystal cubic system, face-centered crystal lattice and crystallite size of 26-30 nm. CTABr still remains in the material as impurities. Meanwhile, based on morphological analysis, Cu particles are dissipated in the pore of thin film. Graphite/TiO2/Cu has higher photoconversion efficiency than graphite/TiO2.   Keywords: semiconductor, graphite/TiO2, Cu electrodeposition

Stress evolution during and after sputter deposition of thin Cu Al alloy films

Science.gov (United States)

Pletea, M.; Wendrock, H.; Kaltofen, R.; Schmidt, O. G.; Koch, R.

2008-06-01

The stress evolution during and after sputter deposition of thin Cu-Al alloy films containing 1 and 2 at.% Al onto oxidized Si(100) substrates has been studied up to thicknesses of 300 nm by means of in situ substrate curvature measurements. In order to correlate stress and morphology, the microstructure was investigated by focused ion beam microscopy, scanning electron microscopy, and atomic force microscopy. The evolution of the stress and microstructure of the Cu-Al alloy films is similar to that for sputtered pure Cu films. Film growth proceeds in the Volmer-Weber mode, typical for high mobility metals. It is characterized by nucleation, island, percolation, and channel stages before the films become continuous, as well as lateral grain growth in the compact films. With increasing Al content the overall atom mobility and, thus, the average grain size of the alloy films are reduced. Increase of the sputter pressure from 0.5 to 2 Pa leads to films with larger grain size, rougher surface morphology and higher electrical resistivity.

One-step chemical bath deposition and photocatalytic activity of Cu2O thin films with orientation and size controlled by a chelating agent

International Nuclear Information System (INIS)

Xu, HaiYan; Dong, JinKuang; Chen, Chen

2014-01-01

Nanocrystalline cuprous oxide (Cu 2 O) thin films were prepared via a one-step chemical bath deposition (CBD) method. The effects of a chelating agent on the orientation, morphology, crystallite size, and photocatalytic activity of the thin films were carefully examined using X-ray diffractometry, scanning electron microscopy, and UV–vis spectrophotometry. The results confirmed that the crystallite size as well as the orientation of the films was dependent on the volume of trisodium citrate (TSC), demonstrating that the band gap ranged from 2.71 eV to 2.49 eV. The morphology and number density of the thin films also depended on the volume of TSC. In addition, the obtained Cu 2 O thin films could degrade methyl orange (MO) efficiently in the presence of H 2 O 2 under visible-light irradiation, and the mechanism for the enhanced photocatalytic activity of the Cu 2 O thin films with the assistance of H 2 O 2 was also explored in detail. - Graphical abstract: Nano-structured Cu 2 O thin films have been prepared by a one-step chemical bath deposition method. The number density, crystallite size, surface morphology and orientation of these thin films could be tailored by chelating agent. The results confirmed that the crystallite size as well as the orientation of the thin films was dependent on the volume of TSC, showed that the band gap ranged from 2.71 eV to 2.49 eV. The formation mechanism of the Cu 2 O particles could be illuminated by an oriented attachment mode. In addition, the obtained Cu 2 O thin films degraded methyl orange efficiently in the presence of H 2 O 2 under the irradiation of visible light, and the mechanism for photocatalytic reaction was also discussed in detail. - Highlights: • Oriented Cu 2 O thin films were prepared by one-step chemical bath deposition. • Orientation and crystallite size were dependent on trisodium citrate volume. • The enhanced visible light degradation mechanism was systematically studied. • Oriented attachment

In-situ investigation of the icosahedral Al-Cu-Fe phase formation in thin films

Energy Technology Data Exchange (ETDEWEB)

Haidara, F., E-mail: fanta.haidara@im2np.fr [IM2NP, UMR 6242 CNRS - Universite Aix-Marseille, Av. Escadrille Normandie-Niemen, Case 142, 13397 Marseille Cedex 20 (France); Duployer, B. [Universite Paul Sabatier CIRIMAT-LCMIE 2R1, 118, Route de Narbonne, 31062 Toulouse Cedex 09 (France); Mangelinck, D.; Record, M.-C. [IM2NP, UMR 6242 CNRS - Universite Aix-Marseille, Av. Escadrille Normandie-Niemen, Case 142, 13397 Marseille Cedex 20 (France)

2012-09-05

Highlights: Black-Right-Pointing-Pointer We investigated the phase formation of i-Al{sub 62.5}Cu{sub 25}Fe{sub 12.5} in thin films. Black-Right-Pointing-Pointer We characterized the samples by DSC and in-situ XRD and resistance measurements. Black-Right-Pointing-Pointer The resistivity value for i-Al{sub 62.5}Cu{sub 25}Fe{sub 12.5} was determined. - Abstract: This work is an investigation of the formation by reactive diffusion at high temperatures of the icosahedral phase, i-Al{sub 62.5}Cu{sub 25}Fe{sub 12.5}, in thin films. The samples were prepared by sputtering at room temperature. The elements Al, Cu and Fe were sequentially deposited onto oxidized silicon substrates. The two following stacking sequences, Al/Cu/Fe and Al/Fe/Cu, were investigated. The phase formation was studied using in situ resistivity, in situ X-ray Diffraction and Differential Scanning Calorimetry measurements. Whatever the stacking sequence, the sequences of phase formation evidenced during the heating treatment are similar. However the temperatures of formation for the first phases that are formed are different; they are higher in the case of the Al/Fe/Cu stacking sequence.

Sol-gel deposition and electrical properties of laser irradiated Cu doped TiO2 multilayer thin films

Directory of Open Access Journals (Sweden)

M.I. Khan

Full Text Available Multilayer thin films (3, 5 and 7 of 20% copper doped titanium dioxide (Cu:TiO2 have been deposited on glass substrates by sol-gel spin coating method. After deposition, films have been irradiated by a beam of continuous wave diode laser (532 nm for two minutes at the angle of 45°. Structural, surface morphology and electrical properties of films have been investigated by X-rays diffraction (XRD, scanning electron microscope (SEM and four point probe technique respectively. XRD shows the formation of titanium copper oxide. Surface morphology of thin films indicated that the average grain size is increased by increasing the number of layers. The average sheet resistivity of 3, 5 and 7 layers of thin films measured by four point probe technique is 2.2 × 104, 1.2 × 104 and 1.0 × 104 (Ohm-cm respectively. The present study will facilitate a cost effective and environmental friendly study for several properties of materials. Keywords: Cu:TiO2, Multilayer thin films, Diode laser

Synthesis of Cu2ZnSnS4 thin films by a precursor solution paste for thin film solar cell applications.

Science.gov (United States)

Cho, Jin Woo; Ismail, Agus; Park, Se Jin; Kim, Woong; Yoon, Sungho; Min, Byoung Koun

2013-05-22

Cu2ZnSnS4 (CZTS) is a very promising semiconductor material when used for the absorber layer of thin film solar cells because it consists of only abundant and inexpensive elements. In addition, a low-cost solution process is applicable to the preparation of CZTS absorber films, which reduces the cost when this film is used for the production of thin film solar cells. To fabricate solution-processed CZTS thin film using an easily scalable and relatively safe method, we suggest a precursor solution paste coating method with a two-step heating process (oxidation and sulfurization). The synthesized CZTS film was observed to be composed of grains of a size of ~300 nm, showing an overall densely packed morphology with some pores and voids. A solar cell device with this film as an absorber layer showed the highest efficiency of 3.02% with an open circuit voltage of 556 mV, a short current density of 13.5 mA/cm(2), and a fill factor of 40.3%. We also noted the existence of Cd moieties and an inhomogeneous Zn distribution in the CZTS film, which may have been triggered by the presence of pores and voids in the CZTS film.

Influence of complexing agent (Na2EDTA on chemical bath deposited Cu4SnS4 thin films

Directory of Open Access Journals (Sweden)

Anuar Kassim

2010-08-01

Full Text Available The quality of thin film is influenced by the presence of complexing agents such as Na2EDTA. The Cu4SnS4 thin films were deposited onto indium tin oxide glass substrate by chemical bath deposition method. The structural, morphological and optical properties of the deposited films have been studied using X-ray diffraction, atomic force microscopy and UV-Vis spectrophotometer, respectively. The XRD data showed that the films have a polycrystalline and orthorhombic structure. It also indicated that the most intense peak at 2 θ = 30.2° which belongs to (221 plane of Cu4 SnS4. The film deposited with 0.05 M Na2 EDTA showed good uniformity, good surface coverage with bigger grains and produced higher absorbance value. The band gap energy varies with the variation of Na2EDTA concentration which ranging from 1.56-1.60 eV. Deposition at concentration of 0.05 M Na2EDTA proved to offer a reasonably good Cu4SnS4 thin film.

Some physical parameters of CuInGaS{sub 2} thin films deposited by spray pyrolysis for solar cells

Energy Technology Data Exchange (ETDEWEB)

Kotbi, Ahmed [Hassan II Casablanca University, MAC and PM Laboratory, ANEPMAER Group, FSTM, Mohammedia (Morocco); Hassan II Casablanca University, LIMAT Laboratory, Department of Physics, FSB, Casablanca (Morocco); Hartiti, Bouchaib; Fadili, Salah [Hassan II Casablanca University, MAC and PM Laboratory, ANEPMAER Group, FSTM, Mohammedia (Morocco); Ridah, Abderraouf [Hassan II Casablanca University, LIMAT Laboratory, Department of Physics, FSB, Casablanca (Morocco); Thevenin, Philippe [University of Lorraine, LMOPS Laboratory, Department of Physics, Metz (France)

2017-05-15

Copper-indium-gallium-disulphide (CuInGaS{sub 2}) is a promising absorber material for thin film photovoltaic. In this paper, CuInGaS{sub 2} (CIGS) thin films have been prepared by chemical spray pyrolysis method onto glass substrates at ambient atmosphere. Structural, morphological, optical and electrical properties of CuInGaS{sub 2} films were analysed by X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM), UV-Vis spectrophotometer and Hall Effect measurement, respectively. The films exhibited single phase chalcopyrite structure. The strain and dislocation density decreased with increase of spray time. The grain size of the films increased from 4.45 to 9.01 nm with increase of spray time. The Raman spectrum indicated the presence of the principal chalcopyrite peak at 295 cm{sup -1}. The optical properties of the synthesized films have been carried out through the measurement of the absorbance spectrum. The optical band gap was estimated by the absorption spectrum fitting (ASF) method. For each sample, the width of the band tail (E{sub Tail}) of CuInGaS{sub 2} thin films was determined. The resistivity (ρ), conductivity (σ), mobility (μ), carrier concentration and conduction type of the films were determined using Hall Effect measurements. The interesting optical properties of CuInGaS{sub 2} make them an attractive material for photovoltaic devices. (orig.)

Fractal formation of a Y-Ba-Cu-O thin film on SrTiO3

International Nuclear Information System (INIS)

Chow, L.; Chen, J.; Desai, V.; Sundaram, K.; Arora, S.

1989-01-01

Fractal formation has been observed after thermal annealing of the rf-sputtered Y-Ba-Cu-O thin film on SrTiO 3 substrate. Through energy-dispersive x-ray analysis, it was found that the composition of the fractal was YBa 2 Cu 3 O x and the surrounding film composition wasY 2 Ba 2 Cu 3 O x . The fractal dimensions D ranging from 1.26 to 1.65 were obtained using the standard sandbox method with different thresholds

Influences of oxygen incorporation on the structural and optoelectronic properties of Cu_2ZnSnS_4 thin films

International Nuclear Information System (INIS)

Yu, Ruei-Sung; Hung, Ta-Chun

2016-01-01

Highlights: • Oxygen incorporation in Cu_2ZnSnS_4 changes the energy band structure. • The material has a comparatively high-absorptive capacity for short wavelength. • Absorption coefficients of the film increase from 10"4 to 10"5 cm"−"1. • The oxygen-containing CZTS film has a mixture of crystallite and crystalline states. • The material could be a candidate as an absorber layer in multi-junction solar cells. - Abstract: This study used the sol–gel method to prepare Cu_2ZnSnS_4 thin films containing oxygen and explored the composition, structural, and optoelectronic properties of the films. The non-vacuum process enabled the oxygen content of the Cu_2ZnSnS_4 films to be 8.89 at% and 10.30 at% for two different annealing conditions. In the crystal structure, oxygen was substituted at the positions of sulfur and appeared in the interstitial sites of the lattice. The compositions of the thin films deviated from the stoichiometric ratio. Both films had kesterite structures with no secondary phase structure. The kesterite CZTS film possessed a composite microstructure of crystallite and crystalline states. The microstructure of the Cu_2ZnSnS_4 film with higher oxygen content was denser and the average grain size was smaller. Incorporating oxygen atoms into crystalline Cu_2ZnSnS_4 changed the energy band structure: the direct energy band gaps were, respectively, 2.75 eV and 2.84 eV; the thin films mainly adsorbed photons with wavelengths less than 500 nm; and the absorption coefficients increased from 10"4 cm"−"1 to 10"5 cm"−"1. The films had a comparatively high absorptive capacity for photons less than 350 nm. Increasing the oxygen content of the film lowered the resistivity. Thus, the oxygen-containing Cu_2ZnSnS_4 thin film could be a candidate for the p-type absorber layer material required in multi-junction solar cells.

Low-temperature photoluminescence of CuSe2 nano-objects in selenium thin films

Directory of Open Access Journals (Sweden)

Martina Gilić

2017-06-01

Full Text Available Thin films of CuSe2 nanoparticles embedded in selenium matrix were prepared by vacuum evaporation method on a glass substrate at room temperature. The optical properties of the films were investigated by photoluminescence spectroscopy (T=20-300K and UV-VIS spectroscopy (T = 300K. Surface morphology was investigated by scanning electron microscopy. The band gap for direct transition in CuSe2 was found to be in the range of 2.72-2.75 eV and that for indirect transition is in the range of 1.71-1.75 eV determined by UV-VIS spectroscopy. On the other hand, selenium exhibits direct band gap in the range of 2.33-2.36 eV. All estimated band gaps slightly decrease with the increase of the film thickness. Photoluminescence spectra of the thin films clearly show emission bands at about 1.63 and 2.32 eV at room temperature, with no shift observed with decreasing temperature. A model was proposed for explaining such anomaly.

Influence of Ni Solute segregation on the intrinsic growth stresses in Cu(Ni) thin films

International Nuclear Information System (INIS)

Kaub, T.M.; Felfer, P.; Cairney, J.M.; Thompson, G.B.

2016-01-01

Using intrinsic solute segregation in alloys, the compressive stress in a series of Cu(Ni) thin films has been studied. The highest compressive stress was noted in the 5 at.% Ni alloy, with increasing Ni concentration resulting in a subsequent reduction of stress. Atom probe tomography quantified Ni's Gibbsian interfacial excess in the grain boundaries and confirmed that once grain boundary saturation is achieved, the compressive stress was reduced. This letter provides experimental support in elucidating how interfacial segregation of excess adatoms contributes to the post-coalescence compressive stress generation mechanism in thin films. - Graphical abstract: Cu(Ni) film stress relationship with Ni additions. Atom probe characterization confirms solute enrichment in the boundaries, which was linked to stress response.

Detecting properties of thin film superconducting bridges made of YBa2Cu3O7-x

International Nuclear Information System (INIS)

Kulikov, V.A.; Matveets, L.V.; Serebryakov, A.Yu.; Laptev, V.N.; Makhov, V.I.; Emel'yanenkov, D.G.; Inkin, Yu.N.

1989-01-01

Results of study of detecting properties of thin film YBa 2 Cu 3 O 7-x bridges, subjected to the effect of 8 mm SHF-radiation are presented. The transition temperatures of bridges were equal to 80-85 K. Current-voltage characteristics and response dependences of bridges with 67, 150 and 425 Ω resistances were measured. It is shown that thin film bridges of YBa 2 Cu 3 O 7-x , representing the system of weak bonds, demonstrate nonstationary Josephson effect and synchronization of weak bonds in bridge volume

Precipitates in YBa2Cu3O7-δ thin films annealed at low oxygen partial pressure

International Nuclear Information System (INIS)

Hou, S.Y.; Phillips, J.M.; Werder, D.J.; Tiefel, T.H.; Fleming, R.M.; Marshall, J.H.; Siegal, M.P.

1993-01-01

We have studied the precipitates in YBa 2 Cu 3 O 7-δ (YBCO) thin films grown by the BaF 2 process in p O 2 =4 Torr and 700 degree C. While stoichiometric films result in BaCuO 2 surface precipitates, we have found Y 2 Cu 2 O 5 precipitates embedded in the matrix of the same film. Off stoichiometric films with Ba/Y 2 Cu 2 O 5 in the film matrix. The estimated densities of the two precipitates favor a stoichiometric YBCO film matrix. This behavior is not explainable in terms of phase equilibria and is attributed to kinetic effects. The electrical properties of the films degrade as the Ba/Y ratio deviates from 2.00

Formation of SmFe{sub 5}(0001) ordered alloy thin films on Cu(111) single-crystal underlayers

Energy Technology Data Exchange (ETDEWEB)

Yabuhara, Osamu; Ohtake, Mitsuru; Nukaga, Yuri; Futamoto, Masaaki [Faculty of Science and Engineering, Chuo University, 1-13-27 Kasuga, Bunkyo-ku, Tokyo 112-8551 (Japan); Kirino, Fumiyoshi, E-mail: yabuhara@futamoto.elect.chuo-u.ac.j [Graduate School of Fine Arts, Tokyo National University of Fine Arts and Music, 12-8 Ueno-koen, Taito-ku, Tokyo 110-8714 (Japan)

2010-01-01

SmFe{sub 5}(0001) single-crystal thin films are prepared by molecular beam epitaxy employing Cu(111) single-crystal underlayers on MgO(111) substrates. The Cu atoms diffuse into the Sm-Fe layer and substitute the Fe sites in SmFe{sub 5} structure forming an alloy compound of Sm(Fe,Cu){sub 5}. The Sm(Fe,Cu){sub 5} film is more Cu enriched with increasing the substrate temperature. The Cu underlayer plays an important role in assisting the formation of the ordered phase.

The crystallisation of Cu{sub 2}ZnSnS{sub 4} thin film solar cell absorbers from co-electroplated Cu-Zn-Sn precursors

Energy Technology Data Exchange (ETDEWEB)

Schurr, R. [Chair for Crystallography and Structural Physics, University of Erlangen-Nuernberg, Staudtstrasse 3, D-91058 Erlangen (Germany)], E-mail: schurr@krist.uni-erlangen.de; Hoelzing, A.; Jost, S.; Hock, R. [Chair for Crystallography and Structural Physics, University of Erlangen-Nuernberg, Staudtstrasse 3, D-91058 Erlangen (Germany); Voss, T.; Schulze, J.; Kirbs, A. [Atotech Deutschland GmbH, Erasmusstrasse 20, D-10553 Berlin (Germany); Ennaoui, A.; Lux-Steiner, M. [Heterogeneous Material Systems SE II, Hahn-Meitner-Institut, Glienickerstr.100, D-14109 Berlin (Germany); Weber, A.; Koetschau, I.; Schock, H.-W. [Technology SE III, Hahn-Meitner-Institut, Glienickerstr.100, D-14109 Berlin (Germany)

2009-02-02

The best CZTS solar cell so far was produced by co-sputtering continued with vapour phase sulfurization method. Efficiencies of up to 5.74% were reached by Katagiri et al. The one step electrochemical deposition of copper, zinc, tin and subsequent sulfurization is an alternative fabrication technique for the production of Cu{sub 2}ZnSnS{sub 4} based thin film solar cells. A kesterite based solar cell (size 0.5 cm{sup 2}) with a conversion efficiency of 3.4% (AM1.5) was produced by vapour phase sulfurization of co-electroplated Cu-Zn-Sn films. We report on results of in-situ X-ray diffraction (XRD) experiments during crystallisation of kesterite thin films from electrochemically co-deposited metal films. The kesterite crystallisation is completed by the solid state reaction of Cu{sub 2}SnS{sub 3} and ZnS. The measurements show two different reaction paths depending on the metal ratios in the as deposited films. In copper-rich metal films Cu{sub 3}Sn and CuZn were found after electrodeposition. In copper-poor or near stoichiometric precursors additional Cu{sub 6}Sn{sub 5} and Sn phases were detected. The formation mechanism of Cu{sub 2}SnS{sub 3} involves the binary sulphides Cu{sub 2-x}S and SnS{sub 2} in the absence of the binary precursor phase Cu{sub 6}Sn{sub 5}. The presence of Cu{sub 6}Sn{sub 5} leads to a preferred formation of Cu{sub 2}SnS{sub 3} via the reaction educts Cu{sub 2-x}S and SnS{sub 2} in the presence of a SnS{sub 2}(Cu{sub 4}SnS{sub 6}) melt. The melt phase may be advantageous in crystallising the kesterite, leading to enhanced grain growth in the presence of a liquid phase.

One-step chemical bath deposition and photocatalytic activity of Cu{sub 2}O thin films with orientation and size controlled by a chelating agent

Energy Technology Data Exchange (ETDEWEB)

Xu, HaiYan, E-mail: xuhaiyan@ahjzu.edu.cn; Dong, JinKuang, E-mail: dongjinkuang1988@126.com; Chen, Chen, E-mail: 13865901653@139.com

2014-01-15

Nanocrystalline cuprous oxide (Cu{sub 2}O) thin films were prepared via a one-step chemical bath deposition (CBD) method. The effects of a chelating agent on the orientation, morphology, crystallite size, and photocatalytic activity of the thin films were carefully examined using X-ray diffractometry, scanning electron microscopy, and UV–vis spectrophotometry. The results confirmed that the crystallite size as well as the orientation of the films was dependent on the volume of trisodium citrate (TSC), demonstrating that the band gap ranged from 2.71 eV to 2.49 eV. The morphology and number density of the thin films also depended on the volume of TSC. In addition, the obtained Cu{sub 2}O thin films could degrade methyl orange (MO) efficiently in the presence of H{sub 2}O{sub 2} under visible-light irradiation, and the mechanism for the enhanced photocatalytic activity of the Cu{sub 2}O thin films with the assistance of H{sub 2}O{sub 2} was also explored in detail. - Graphical abstract: Nano-structured Cu{sub 2}O thin films have been prepared by a one-step chemical bath deposition method. The number density, crystallite size, surface morphology and orientation of these thin films could be tailored by chelating agent. The results confirmed that the crystallite size as well as the orientation of the thin films was dependent on the volume of TSC, showed that the band gap ranged from 2.71 eV to 2.49 eV. The formation mechanism of the Cu{sub 2}O particles could be illuminated by an oriented attachment mode. In addition, the obtained Cu{sub 2}O thin films degraded methyl orange efficiently in the presence of H{sub 2}O{sub 2} under the irradiation of visible light, and the mechanism for photocatalytic reaction was also discussed in detail. - Highlights: • Oriented Cu{sub 2}O thin films were prepared by one-step chemical bath deposition. • Orientation and crystallite size were dependent on trisodium citrate volume. • The enhanced visible light degradation mechanism

Optical and Electrical Properties of Thin Films of CuS Nanodisks Ensembles Annealed in a Vacuum and Their Photocatalytic Activity

Directory of Open Access Journals (Sweden)

J. Santos Cruz

2013-01-01

Full Text Available Effects on the optical, electrical, and photocatalytic properties of undoped CuS thin films nanodisks vacuum annealed at different temperatures were investigated. The chemical bath prepared CuS thin films were obtained at 40°C on glass substrates. The grain size of 13.5±3.5 nm was computed directly from high-resolution transmission electron microscopy (HRTEM images. The electrical properties were measured by means of both Hall effect at room temperature and dark resistivity as a function of the absolute temperature 100–330 K. The activation energy values were calculated as 0.007, 0.013, and 0.013 eV for 100, 150, and 200°C, respectively. The energy band gap of the films varied in the range of 1.98 up to 2.34 eV. The photocatalytic activity of the CuS thin film was evaluated by employing the degradation of aqueous methylene blue solution in the presence of hydrogen peroxide. The CuS sample thin film annealed in vacuum at 150°C exhibited the highest photocatalytic activity in presence of hydrogen peroxide.

The W alloying effect on thermal stability and hardening of nanostructured Cu-W alloyed thin films.

Science.gov (United States)

Zhao, J T; Zhang, J Y; Hou, Z Q; Wu, K; Feng, X B; Liu, G; Sun, J

2018-05-11

In order to achieve desired mechanical properties of alloys by manipulating grain boundaries (GBs) via solute decoration, it is of great significance to understand the underlying mechanisms of microstructural evolution and plastic deformation. In this work, nanocrystalline (NC) Cu-W alloyed films with W concentrations spanning from 0 to 40 at% were prepared by using magnetron sputtering. Thermal stability (within the temperature range of 200 °C-600 °C) and hardness of the films were investigated by using the x-ray diffraction, transmission electron microscope (TEM) and nanoindentation, respectively. The NC pure Cu film exhibited substantial grain growth upon all annealing temperatures. The Cu-W alloyed films, however, displayed distinct microstructural evolution that depended not only on the W concentration but also on the annealing temperature. At a low temperature of 200 °C, all the Cu-W alloyed films were highly stable, with unconspicuous change in grain sizes. At high temperatures of 400 °C and 600 °C, the microstructural evolution was greatly controlled by the W concentrations. The Cu-W films with low W concentration manifested abnormal grain growth (AGG), while the ones with high W concentrations showed phase separation. TEM observations unveiled that the AGG in the Cu-W alloyed thin films was rationalized by GB migration. Nanoindentation results showed that, although the hardness of both the as-deposited and annealed Cu-W alloyed thin films monotonically increased with W concentrations, a transition from annealing hardening to annealing softening was interestingly observed at the critical W addition of ∼25 at%. It was further revealed that an enhanced GB segregation associated with detwinning was responsible for the annealing hardening, while a reduced solid solution hardening for the annealing softening.

Microstructural, thermal and mechanical behavior of co-sputtered binary Zr–Cu thin film metallic glasses

Energy Technology Data Exchange (ETDEWEB)

Apreutesei, M. [MATEIS Laboratory-INSA de Lyon, Bât. B. Pascal, 7 Avenue Jean Capelle, 69621 Villeurbanne Cedex (France); Steyer, P., E-mail: philippe.steyer@insa-lyon.fr [MATEIS Laboratory-INSA de Lyon, Bât. B. Pascal, 7 Avenue Jean Capelle, 69621 Villeurbanne Cedex (France); Joly-Pottuz, L. [MATEIS Laboratory-INSA de Lyon, Bât. B. Pascal, 7 Avenue Jean Capelle, 69621 Villeurbanne Cedex (France); Billard, A. [LERMPS-UTBM, Site de Montbéliard, 90010 Belfort Cédex (France); Qiao, J.; Cardinal, S. [MATEIS Laboratory-INSA de Lyon, Bât. B. Pascal, 7 Avenue Jean Capelle, 69621 Villeurbanne Cedex (France); Sanchette, F. [LASMIS-UTT, UMR CNRS 6279, 12 rue Marie Curie, CS 42060, 10004 Troyes Cedex (France); Pelletier, J.M.; Esnouf, C. [MATEIS Laboratory-INSA de Lyon, Bât. B. Pascal, 7 Avenue Jean Capelle, 69621 Villeurbanne Cedex (France)

2014-06-30

Bulk metallic glasses have attracted considerable attention over the last decades for their outstanding mechanical features (high strength, super-elasticity) and physico-chemical properties (corrosion resistance). Recently, some attempts to assign such original behavior from bulk materials to modified surfaces have been reported in the literature based on multicomponent alloys. In this paper we focused on the opportunity to form a metallic glass coating from the binary Zr–Cu system using a magnetron co-sputtering physical vapor deposition process. The composition of the films can be easily controlled by the relative intensities applied to both pure targets, which made possible the study of the whole Zr–Cu system (from 13.4 to 85.0 at.% Cu). The chemical composition of the films was obtained by energy dispersive X-ray spectroscopy, and their microstructure was characterized by scanning and transmission electron microscopy. The thermal stability of the films was deduced from an in situ X-ray diffraction analysis (from room temperature up to 600 °C) and correlated with the results of the differential scanning calorimetry technique. Their mechanical properties were determined by nanoindentation experiments. - Highlights: • We reported deposition of Zr-Cu thin film metallic glasses by co-sputtering • Films were XRD-amorphous in a wide composition range (33.3 – 85.0 at.% Cu) • Microstructure investigation revealed some local nanodomains • We examined the thermal stability by means of in situ X-ray diffraction • Nanoindentation was used to obtained mechanical properties of thin films.

Chemical bath deposition of CdS thin films doped with Zn and Cu

Indian Academy of Sciences (India)

Abstract. Zn- and Cu-doped CdS thin films were deposited onto glass substrates by the chemical bath technique. ... Cadmium sulfide; chemical bath deposition; doping; optical window. 1. ..... at low temperature (10 K), finding similar trends than.

Physical and chemical properties of YBa2Cu3O7 thin films

International Nuclear Information System (INIS)

El-Samahi, M.I.

1991-12-01

Investigations were carried out to determine the influence of different annealing processes on the superconducting properties of the YBa 2 Cu 3 O 7 thin films. The samples were produced by means of coevaporation of Cu, Y and Ba on polycrystalline yttria stabilized (YSZ) ZrO 2 and single crystal SrTiO 3 (001) substrates. Subsequently, the as-deposited films were subjected to two different annealing methods to crystallize the superconducting phase YBa 2 Cu 3 O 7 : (i) heating up, annealing and cooling in an oxygen atmosphere and (ii) heating up in an innert gas atmosphere up to the maximum annealing temperature (T max ) and then annealing and cooling under oxygen. (orig.)

Electrodeposited semiconductors at room temperature: an X-ray Absorption Spectroscopy study of Cu-, Zn-, S-bearing thin films

International Nuclear Information System (INIS)

Di Benedetto, Francesco; Cinotti, Serena; D’Acapito, Francesco; Vizza, Francesco; Foresti, Maria Luisa; Guerri, Annalisa; Lavacchi, Alessandro; Montegrossi, Giordano; Romanelli, Maurizio; Cioffi, Nicola; Innocenti, Massimo

2015-01-01

A SEM, DRS and XAS study was carried out on ultra-thin films with chemical composition belonging to the Cu-Zn-S ternary system, related to the kesterite-type materials, in the light of their potential application to thin film photovoltaic technology. The films, realized through the layer-by-layer E-ALD electrochemical technique, reveal variable phase composition as a function of the applied E-ALD sequence. In particular, by increasing the Zn cycles per Cu cycle from 1:1 to 9:1, the number of detected phases changes from 3 to 2. In all samples, Cu mainly crystallize in a Cu_2S type phase, whereas Zn occurs as ZnS. In the 1:1 sample, additional ZnO is detected. The variable phase composition parallels apparent changes in the sample morphology. In all samples, a sulphide thin film is covered by a net of elongated nanostructures, the length of which decreases with increasing the number of Zn cycles per Cu cycle. All these evidences are interpreted as due to the operating electrochemical route during the synthesis and confirm the lack of miscibility between Cu_2S and ZnS, thermodynamically relevant after the E-ALD has stopped. The band gap values exhibited by the three films, modulated by changing the copper:zinc ratio, progressively approach a value useful for solar energy conversion, thus strongly proposing these new sulfide nanomaterials for photovoltaics and photochemical applications.

Influence of the spacer layer on microstructure and magnetic properties of [NdFeB/(NbCu)]xn thin films

Energy Technology Data Exchange (ETDEWEB)

Chiriac, H. [National Institute of R and D for Technical Physics, 47 Mangeron Blvd., 700050 Iasi (Romania); Grigoras, M. [National Institute of R and D for Technical Physics, 47 Mangeron Blvd., 700050 Iasi (Romania); Urse, M. [National Institute of R and D for Technical Physics, 47 Mangeron Blvd., 700050 Iasi (Romania)]. E-mail: urse@phys-iasi.ro

2007-09-15

Some results concerning the influence of the composition and thickness of NbCu spacer layer on the microstructure and magnetic properties of multilayer [NdFeB/(NbCu)]xn films, in view of their utilization for manufacturing the thin film permanent magnets are presented. A comparison between the microstructure and magnetic properties of NdFeB single layer and [NdFeB/(NbCu)]xn multilayer is also presented. The multilayer [NdFeB/(NbCu)]xn thin films with the thickness of the NdFeB layer of 180nm and the thickness of the NbCu spacer layer of 3nm, exhibit good hard magnetic characteristics such as coercive force H{sub c} of about 1510kA/m and the remanence ratio M{sub r}/M{sub s} of about 0.8.

Influence of the spacer layer on microstructure and magnetic properties of [NdFeB/(NbCu)]xn thin films

International Nuclear Information System (INIS)

Chiriac, H.; Grigoras, M.; Urse, M.

2007-01-01

Some results concerning the influence of the composition and thickness of NbCu spacer layer on the microstructure and magnetic properties of multilayer [NdFeB/(NbCu)]xn films, in view of their utilization for manufacturing the thin film permanent magnets are presented. A comparison between the microstructure and magnetic properties of NdFeB single layer and [NdFeB/(NbCu)]xn multilayer is also presented. The multilayer [NdFeB/(NbCu)]xn thin films with the thickness of the NdFeB layer of 180nm and the thickness of the NbCu spacer layer of 3nm, exhibit good hard magnetic characteristics such as coercive force H c of about 1510kA/m and the remanence ratio M r /M s of about 0.8

One, step electrodeposition of Cu(Ga,In)Se2 thin films from aqueous solution

Science.gov (United States)

Fahoume, M.; Boudraine, H.; Aggour, M.; Chraïbi, F.; Ennaoui, A.; Delplancke, J. L.

2005-03-01

Cu(In,Ga)Se{2} (CIGS) semiconducting thin films films were prepared by electrodeposition from aqueous solution containing CuCl{2}, InCl{3}, GaCl{3} and H{2}SeO{3}. The deposited material was characterized by cyclic voltammetry. The compositional, structural studies were carried out using scanning electron microscopy (SEM), energy dispersive X-ray microanalysis (EDX), X-ray diffraction (XRD) and transmission electron microscopy (TEM). X-ray analysis showed the formation of CuIn{1-x}GaxSe{2} films, in the optimum conditions, with preferred orientation in the (112) direction. We observed a shift of the peaks to higher angles with increasing x, accounting for a decrease of the lattice constants when In atoms are substituted by Ga atoms. Element mapping and scanline (EDX) indicate that the Cu, In, Ga, and Se elements are homogeneously distributed.

Development of sputtered CuSbS2 thin films grown by sequential deposition of binary sulfides

Science.gov (United States)

Medina-Montes, M. I.; Vieyra-Brito, O.; Mathews, N. R.; Mathew, X.

2018-05-01

In this work, CuSbS2 thin films were developed by annealing binary precursors deposited sequentially by rf magnetron sputtering. The recrystallization process was optimized and the films were extensively characterized using a number of tools such as XRD, Raman, SEM, energy dispersive x-ray spectroscopy, atomic force microscopy, Hall, UV–vis spectroscopy, Ellipsometry, Seebeck, and photoresponse. The influence of annealing temperature on the structure, morphology, elemental composition, optical and electrical properties are reported. Annealing below 350 °C resulted in famatinite (Cu3SbS4) and chalcostibite (CuSbS2) ternaries as well as binary phases. Phase-pure chalcostibite was obtained in the range of 350 °C–375 °C. At 400 °C, although CuSbS2 was predominant, tetrahedrite phase (Cu12Sb4S13) appeared as an additional phase. The elemental composition of the films was slightly sulfur deficient, and the atomic percentages of Cu, Sb and S showed a dependence on annealing temperature. The material properties of the phase-pure CuSbS2 thin films are: optical band gap in the range of 1.5–1.62 eV, absorption coefficient close to 105 cm‑1, atomic ratios of Cu/Sb ∼1 and (Cu + Sb)/S ∼1.2, crystal size 18.3–24.5 nm and grain size 50–300 nm. The films were photo-sensitive, showed p-type semiconductor behavior. Electrical resistivity, carrier density and hole mobility were 94–459 Ω cm, 1.6–7.0 × 1015 cm‑3 and 8.4–9.5 cm2 V‑1 s respectively.

An Investigation of Structural and Electrical Properties of Nano Crystalline SnO2:Cu Thin Films Deposited by Spray Pyrolysis

Directory of Open Access Journals (Sweden)

J. Podder

2011-11-01

Full Text Available Pure tin oxide (SnO2 and Cu doped SnO2 thin films have been deposited onto glass substrates by a simple spray pyrolysis technique under atmospheric pressure at temperature 350 °C. The doping concentration of Cu was varied from 1 to 8 wt. % while all other deposition parameters such as spray rate, carrier air gas pressure, deposition time, and distance between spray nozzle to substrate were kept constant. Surface morphology of the as-deposited thin films has been studied by Scanning Electron Microscopy (SEM. The SEM micrograph of the films shows uniform deposition. The structural properties of the as-deposited and annealed thin films have been studied by XRD and the electrical characterization was performed by Van-der Pauw method. The as-deposited films are found polycrystalline in nature with tetragonal crystal structure. Average grain sizes of pure and Cu doped SnO2 thin film have been obtained in the range of 7.2445 Å to 6.0699 Å, which indicates the nanometric size of SnO2 grains developed in the film. The resistivity of SnO2 films was found to decrease initially from 4.5095×10−4 Ωm to 1.1395× 10−4 Ωm for concentration of Cu up to 4 % but it was increased further with increasing of Cu concentrations. The experimental results depict the suitability of this material for using as transparent and conducting window materials in solar cells and gas sensors.

Non-conventional photocathodes based on Cu thin films deposited on Y substrate by sputtering

Energy Technology Data Exchange (ETDEWEB)

Perrone, A. [Department of Mathematics and Physics “E. De Giorgi”, University of Salento, 73100 Lecce (Italy); National Institute of Nuclear Physics and University of Salento, 73100 Lecce (Italy); D’Elia, M. [Department of Mathematics and Physics “E. De Giorgi”, University of Salento, 73100 Lecce (Italy); Gontad, F., E-mail: francisco.gontad@le.infn.it [Department of Mathematics and Physics “E. De Giorgi”, University of Salento, 73100 Lecce (Italy); National Institute of Nuclear Physics and University of Salento, 73100 Lecce (Italy); Di Giulio, M.; Maruccio, G. [Department of Mathematics and Physics “E. De Giorgi”, University of Salento, 73100 Lecce (Italy); Cola, A. [National Council Research, Institute for Microelectronics and Microsystems, 73100 Lecce (Italy); Stankova, N.E. [Institute of Electronics, Bulgarian Academy of Sciences, 1784 Sofia (Bulgaria); Kovacheva, D.G. [Institute of General and Inorganic Chemistry, Bulgarian Academy of Sciences, 1113 Sofia (Bulgaria); Broitman, E. [Department of Physics, Chemistry and Biology (IFM), Linköping University, SE-581 83 Linköping (Sweden)

2014-07-01

Copper (Cu) thin films were deposited on yttrium (Y) substrate by sputtering. During the deposition, a small central area of the Y substrate was shielded to avoid the film deposition and was successively used to study its photoemissive properties. This configuration has two advantages: the cathode presents (i) the quantum efficiency and the work function of Y and (ii) high electrical compatibility when inserted into the conventional radio-frequency gun built with Cu bulk. The photocathode was investigated by scanning electron microscopy to determine surface morphology. X-ray diffraction and atomic force microscopy studies were performed to compare the structure and surface properties of the deposited film. The measured electrical resistivity value of the Cu film was similar to that of high purity Cu bulk. Film to substrate adhesion was also evaluated using the Daimler–Benz Rockwell-C adhesion test method. Finally, the photoelectron performance in terms of quantum efficiency was obtained in a high vacuum photodiode cell before and after laser cleaning procedures. A comparison with the results obtained with a twin sample prepared by pulsed laser deposition is presented and discussed.

Influence of deposition parameters and annealing on Cu2ZnSnS4 thin films grown by SILAR

International Nuclear Information System (INIS)

Patel, Kinjal; Shah, Dimple V.; Kheraj, Vipul

2015-01-01

Highlights: • Optimisation of Cu 2 ZnSnS 4 (CZTS) thin film deposition using SILAR method. • Study on effects of annealing at different temperature under two different ambients, viz. sulphur and tin sulphide. • Formation of CZTS thin films with good crystalline quality confirmed by XRD and Raman spectra. - Abstract: Cu 2 ZnSnS 4 (CZTS) thin films were deposited on glass substrates using Successive Ionic Layer Adsorption and Reaction (SILAR) technique at the room-temperature. The deposition parameters such as concentration of precursors and number of cycles were optimised for the deposition of uniform CZTS thin films. Effects of annealing at different temperature under two different ambient, viz. sulphur and tin sulphide have also been investigated. The structural and optical properties of the films were studied using X-ray diffraction, scanning electron microscopy, Raman spectroscopy and UV-visible spectra in light with the deposition parameters and annealing conditions. It is observed that a good quality CZTS film can be obtained by SILAR at room temperature followed by annealing at 500 °C in presence of sulphur

Physical, optical and electrical properties of copper selenide (CuSe) thin films deposited by solution growth technique at room temperature

International Nuclear Information System (INIS)

Gosavi, S.R.; Deshpande, N.G.; Gudage, Y.G.; Sharma, Ramphal

2008-01-01

Copper selenide (CuSe) thin films are grown onto amorphous glass substrate from an aqueous alkaline medium using solution growth technique (SGT) at room temperature. The preparative parameters were optimized to obtain good quality of thin films. The as-deposited films were characterized for physical, optical and electrical properties. X-ray diffraction (XRD) pattern reveals that the films are polycrystalline in nature. Energy dispersive analysis by X-ray (EDAX) shows formation of stoichiometric CuSe compound. Uniform deposition of CuSe thin films on glass substrate was observed from scanning electron microscopy (SEM) and atomic force microscopy (AFM) micrographs. Average grain size was determined to 144.53 ± 10 nm using atomic force microscopy. The band gap was found to be 2.03 eV with direct band-to-band transition. Semi-conducting behaviour was observed from resistivity measurements. Ohmic behaviour was seen from I-V curve with good electrical conductivity

AFM study of growth of Bi2Sr2-xLaxCuO6 thin films

International Nuclear Information System (INIS)

Haitao Yang; Hongjie Tao; Yingzi Zhang; Duogui Yang; Lin Li; Zhongxian Zhao

1997-01-01

c-axis-oriented Bi 2 Sr 1.6 La 0.4 CuO 6 thin films deposited on flat planes of (100)SrTiO 3 , (100)LaAlO 3 and (100)MgO substrates and vicinal planes (off-angle ∼ 6 deg.) of SrTiO 3 substrates by RF magnetron sputtering were studied by atomic force microscopy (AFM). T c of these films reached 29 K. Film thickness ranged from 15 nm to 600 nm. Two typical growth modes have been observed. AFM images of thin films on flat planes of substrates showed a terraced-island growth mode. By contrast, Bi-2201 thin films on vicinal planes of substrates showed a step-flow growth mode. The growth unit is a half-unit-cell in the c-axis for both growth modes. No example of spiral growth, which was thought to be the typical structure of YBCO thin films, was found in either of these kinds of thin films. (author)

CuIn{sub x}Ga{sub 1-x}Se{sub 2} thin films prepared by electron beam evaporation

Energy Technology Data Exchange (ETDEWEB)

Venkatachalam, M.; Kannan, M.D.; Jayakumar, S.; Balasundaraprabhu, R.; Nandakumar, A.K. [Thin Film Center, Department of Physics, PSG College of Technology (India); Muthukumarasamy, N. [Department of Physics, Coimbatore Institute of Technology (India)

2008-05-15

CuIn{sub x}Ga{sub 1-x}Se{sub 2} bulk compound of three different compositions x=0.75, 0.80 and 0.85 have been prepared using individual elements of copper, indium, gallium and selenium. Thin films of CuIn{sub x}Ga{sub 1-x}Se{sub 2} have been deposited using the prepared bulk by electron beam evaporation method. The structural studies carried on the deposited films revealed that films annealed at 400 C are crystalline in nature exhibiting chalcopyrite phase. The position of the (1 1 2) peak in the X-ray diffractogram corresponding to the chalcopyrite phase has been found to be dependent on the percentage of gallium in the films. The composition of the prepared bulk and thin films has been identified using energy dispersive X-ray analysis. The photoluminescence spectra of the CuIn{sub x}Ga{sub 1-x}Se{sub 2} films exhibited sharp luminescence peaks corresponding to the band gap of the material. (author)

Some Characteristics of r.f. Sputtered CuInS2 Thin Films

International Nuclear Information System (INIS)

Samaan, A.N.Y.; Al-Saffar, I.S.; Wasim, S.M.; Hill, A.E.; Armour, D.G.; Tomlinson, R.D.

1983-01-01

Electrical data from sputtered and annealed p-type CuInS 2 thin films have been obtained over a range of temperatures. An analysis of hole mobility vs. temperature data indicates that the charge carriers are predominantly scattered by neutral and ionized impurities and by acoustic-mode vibrations

CuOX thin films by direct oxidation of Cu films deposited by physical vapor deposition

Directory of Open Access Journals (Sweden)

D. Santos-Cruz

Full Text Available Thin films of Cu2O and CuO oxides were developed by direct oxidation of physical vapor deposited copper films in an open atmosphere by varying the temperature in the range between 250 and 400 °C. In this work, the influence of oxidation temperature on structural, optical and electrical properties of copper oxide films has been discussed. The characterization results revealed that at lower temperatures (<300 °C, it is feasible to obtained coper (I oxide whereas at temperatures higher than 300 °C, the copper (II oxide is formed. The band gap is found to vary in between 1.54 and 2.21 eV depending on the oxidation temperature. Both oxides present p-type electrical conductivity. The carrier concentration has been increased as a function of the oxidation temperature from 1.61 × 1012 at 250 °C to 6.8 × 1012 cm−3 at 400 °C. The mobility has attained its maximum of 34.5 cm2 V−1 s−1 at a temperature of 300 °C, and a minimum of 13.8 cm2 V−1 s−1 for 400 °C. Finally, the resistivity of copper oxide films decreases as a function of oxidation temperature from 5.4 × 106 to 2.4 × 105 Ω-cm at 250 and 400 °C, respectively. Keywords: PVD, Oxidizing annealed treatment, Non-toxic material

Effects of the substrate temperature on the properties of CuIn{sub 5}S{sub 8} thin films

Energy Technology Data Exchange (ETDEWEB)

Gannouni, M., E-mail: gm_mounir@yahoo.fr [Laboratoire de Photovoltaique et Materiaux Semi-conducteurs - ENIT BP 37, Le belvedere 1002-Tunis (Tunisia); Kanzari, M. [Laboratoire de Photovoltaique et Materiaux Semi-conducteurs - ENIT BP 37, Le belvedere 1002-Tunis (Tunisia)

2011-10-01

Structural, optical and electrical properties of CuIn{sub 5}S{sub 8} thin films grown by thermal evaporation have been studied relating the effects of substrate heating conditions of these properties. The CuIn{sub 5}S{sub 8} thin films were carried out at substrate temperatures in the temperature range 100-300 deg. C. The effects of heated substrate on their physico-chemical properties were investigated using X-ray diffraction (XRD), energy-dispersive X-ray spectroscopy (EDX), optical transmission and hot probe method. X-ray diffraction revealed that the films are strong preferred orientation along the (3 1 1) plane upon substrate temperature 200 deg. C and amorphous for the substrate temperatures below 200 deg. C. No secondary phases are observed for all the films. The composition is greatly affected by heated substrate. From the optical transmission and reflection, an important absorption coefficient exceeds 10{sup 5} cm{sup -1} at 800 nm was found. As increasing the substrate temperature, the optical energy band gap decreases from 1.70 eV for the unheated films to 1.25 eV for the deposited films at 300 deg. C. It was found that CuIn{sub 5}S{sub 8} thin film is an n-type semiconductor at 250 deg. C.

Room-temperature wide-range luminescence and structural, optical, and electrical properties of SILAR deposited Cu-Zn-S nano-structured thin films

Science.gov (United States)

Jose, Edwin; Kumar, M. C. Santhosh

2016-09-01

We report the deposition of nanostructured Cu-Zn-S composite thin films by Successive Ionic Layer Adsorption and Reaction (SILAR) method on glass substrates at room temperature. The structural, morphological, optical, photoluminescence and electrical properties of Cu-Zn-S thin films are investigated. The results of X-ray diffraction (XRD) and Raman spectroscopy studies indicate that the films exhibit a ternary Cu-Zn-S structure rather than the Cu xS and ZnS binary composite. Scanning electron microscope (SEM) studies show that the Cu-Zn-S films are covered well over glass substrates. The optical band gap energies of the Cu-Zn-S films are calculated using UV-visible absorption measurements, which are found in the range of 2.2 to 2.32 eV. The room temperature photoluminescence studies show a wide range of emissions from 410 nm to 565 nm. These emissions are mainly due to defects and vacancies in the composite system. The electrical studies using Hall effect measurements show that the Cu-Zn-S films are having p-type conductivity.

Controlling the Performance of P-type Cu2O/SnO Bilayer Thin-Film Transistors by Adjusting the Thickness of the Copper Oxide Layer

KAUST Repository

Al-Jawhari, Hala A.

2014-11-11

The effect of copper oxide layer thickness on the performance of Cu2O/SnO bilayer thin-film transistors was investigated. By using sputtered Cu2O films produced at an oxygen partial pressure, Opp, of 10% as the upper layer and 3% Opp SnO films as the lower layer we built a matrix of bottom-gate Cu2O/SnO bilayer thin-film transistors of different thickness. We found that the thickness of the Cu2O layer is of major importance in oxidation of the SnO layer underneath. The thicker the Cu2O layer, the more the underlying SnO layer is oxidized, and, hence, the more transistor mobility is enhanced at a specific temperature. Both device performance and the annealing temperature required could be adjusted by controlling the thickness of each layer of Cu2O/SnO bilayer thin-film transistors.

CuS p-type thin film characterization deposited on Ti, ITO and glass substrates using spray pyrolysis deposition (SPD) for light emitting diode (LED) application

Energy Technology Data Exchange (ETDEWEB)

Sabah, Fayroz A., E-mail: fayroz-arif@yahoo.com [Institue of Nano-Optoelectronics Research and Technology (INOR), School of Physics, Universiti Sains Malaysia, 11800 Penang (Malaysia); Department of Electrical Engineering, College of Engineering, Al-Mustansiriya University, Baghdad (Iraq); Ahmed, Naser M., E-mail: naser@usm.my; Hassan, Z., E-mail: zai@usm.my; Azzez, Shrook A. [Institue of Nano-Optoelectronics Research and Technology (INOR), School of Physics, Universiti Sains Malaysia, 11800 Penang (Malaysia); Rasheed, Hiba S., E-mail: hibasaad1980@yahoo.com [Institue of Nano-Optoelectronics Research and Technology (INOR), School of Physics, Universiti Sains Malaysia, 11800 Penang (Malaysia); Department of Physics, College of Education, Al-Mustansiriya University, Baghdad (Iraq); Al-Hazim, Nabeel Z., E-mail: nabeelnano333@gmail.com [Institue of Nano-Optoelectronics Research and Technology (INOR), School of Physics, Universiti Sains Malaysia, 11800 Penang (Malaysia); Ministry of Education, the General Directorate for Educational Anbar (Iraq)

2016-07-06

The copper sulphide (CuS) thin films were grown with good adhesion by spray pyrolysis deposition (SPD) on Ti, ITO and glass substrates at 200 °C. The distance between nozzle and substrate is 30 cm. The composition was prepared by mixing copper chloride CuCl{sub 2}.2H{sub 2}O as a source of Cu{sup 2+} and sodium thiosulfate Na{sub 2}S{sub 2}O{sub 3}.5H{sub 2}O as a source of and S{sup 2−}. Two concentrations (0.2 and 0.4 M) were used for each CuCl{sub 2} and Na{sub 2}S{sub 2}O{sub 3} to be prepared and then sprayed (20 ml). The process was started by spraying the solution for 3 seconds and after 10 seconds the cycle was repeated until the solution was sprayed completely on the hot substrates. The structural characteristics were studied using X-ray diffraction; they showed covellite CuS hexagonal crystal structure for 0.2 M concentration, and covellite CuS hexagonal crystal structure with two small peaks of chalcocite Cu{sub 2}S hexagonal crystal structure for 0.4 M concentration. Also the surface and electrical characteristics were investigated using Field Emission Scanning Electron Microscopy (FESEM) and current source device, respectively. The surface study for the CuS thin films showed nanorods to be established for 0.2 M concentration and mix of nanorods and nanoplates for 0.4 M concentration. The electrical study showed ohmic behavior and low resistivity for these films. Hall Effect was measured for these thin films, it showed that all samples of CuS are p- type thin films and ensured that the resistivity for thin films of 0.2 M concentration was lower than that of 0.4 M concentration; and for the two concentrations CuS thin film deposited on ITO had the lowest resistivity. This leads to the result that the conductivity was high for CuS thin film deposited on ITO substrate, and the conductivity of the three thin films of 0.2 M concentration was higher than that of 0.4 M concentration.

An investigation on silar Cu(In{sub 1-x}Al{sub x})Se{sub 2} thin films

Energy Technology Data Exchange (ETDEWEB)

Dhanam, M. [PG and Research, Department of Physics, Kongunadu Arts and Science College, Coimbatore 641029 (India); Kavitha, B., E-mail: kavitha_48@yahoo.co.in [PG and Research, Department of Physics, Kongunadu Arts and Science College, Coimbatore 641029 (India); Velumani, S. [Centro de Investigacion y de Estudios Avanzados del I.P.N.(CINVESTAV) (Mexico)

2010-10-25

Cu(In{sub 1-x}Al{sub x})Se{sub 2} [CIAS] thin films were prepared for the first time by successive ionic layer adsorption and reaction [SILAR] method with two different dipping cycles. The thickness of the films was measured by gravimetric technique. The structural, morphological, compositional, optical transition and electrical investigation of SILAR CIAS thin films with respect to two different dipping cycles have been discussed in this paper.

Cu{sub 2}ZnSnS{sub 4} thin films grown by flash evaporation and subsequent annealing in Ar atmosphere

Energy Technology Data Exchange (ETDEWEB)

Caballero, R., E-mail: raquel.caballero@uam.es [Universidad Autónoma de Madrid, Departamento de Física Aplicada, M12, C/Francisco Tomás y Valiente 7, E-28049 Madrid (Spain); Izquierdo-Roca, V. [IREC, Catalonia Institute for Energy Research, C. Jardins de les Dones de Negre 1, Sant Adriá del Besòs, E-08930 Barcelona (Spain); Merino, J.M.; Friedrich, E.J. [Universidad Autónoma de Madrid, Departamento de Física Aplicada, M12, C/Francisco Tomás y Valiente 7, E-28049 Madrid (Spain); Climent-Font, A. [Universidad Autónoma de Madrid, Departamento de Física Aplicada, M12, C/Francisco Tomás y Valiente 7, E-28049 Madrid (Spain); CMAM, Universidad Autónoma de Madrid, C/Faraday 3, E-28049, Madrid (Spain); Saucedo, E. [IREC, Catalonia Institute for Energy Research, C. Jardins de les Dones de Negre 1, Sant Adriá del Besòs, E-08930 Barcelona (Spain); Pérez-Rodríguez, A. [IREC, Catalonia Institute for Energy Research, C. Jardins de les Dones de Negre 1, Sant Adriá del Besòs, E-08930 Barcelona (Spain); IN" 2UB, Departament d' Electrònica, Universitat de Barcelona, C. Martí i Franquès 1, E-08028 Barcelona (Spain); León, M. [Universidad Autónoma de Madrid, Departamento de Física Aplicada, M12, C/Francisco Tomás y Valiente 7, E-28049 Madrid (Spain)

2013-05-01

A study of Cu{sub 2}ZnSnS{sub 4} thin films grown by flash evaporation and subsequently annealed in Ar atmosphere has been carried out. Prior to thin film deposition, Cu{sub 2}ZnSnS{sub 4} bulk compounds with stoichiometric and Zn-rich compositions were synthesized as evaporation sources. The characteristics of the bulk compounds and thin films were investigated by X-ray diffraction, Raman spectroscopy, scanning electron microscopy and elastic back scattering. Cu{sub 2}ZnSnS{sub 4} deposited films contain lower concentrations of Zn than the bulk compounds used as evaporation sources, which is related to a preferential Zn re-evaporation during the deposition process. The desired kesterite composition for solar cell applications was achieved by using a Zn-rich compound as the evaporation source plus a thermal treatment at 620 °C in Ar atmosphere. - Highlights: ► Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films by flash evaporation + annealing in Ar atmosphere ► Difficulty of growing a single phase kesterite material ► X-ray diffraction and Raman spectroscopy to identify the different phases ► Importance of the starting film composition to get the desired CZTS material ► Annealing treatment to obtain the optimum material to be used for CZTS solar cells.

Crystallization and electrical resistivity of Cu2O and CuO obtained by thermal oxidation of Cu thin films on SiO2/Si substrates

International Nuclear Information System (INIS)

De Los Santos Valladares, L.; Salinas, D. Hurtado; Dominguez, A. Bustamante; Najarro, D. Acosta; Khondaker, S.I.; Mitrelias, T.; Barnes, C.H.W.; Aguiar, J. Albino; Majima, Y.

2012-01-01

In this work, we study the crystallization and electrical resistivity of the formed oxides in a Cu/SiO 2 /Si thin film after thermal oxidation by ex-situ annealing at different temperatures up to 1000 °C. Upon increasing the annealing temperature, from the X ray diffractogram the phase evolution Cu → Cu + Cu 2 O → Cu 2 O → Cu 2 O + CuO → CuO was detected. Pure Cu 2 O films are obtained at 200 °C, whereas uniform CuO films without structural surface defects such as terraces, kinks, porosity or cracks are obtained in the temperature range 300–550 °C. In both oxides, crystallization improves with annealing temperature. A resistivity phase diagram, which is obtained from the current–voltage response, is presented here. The resistivity was expected to increase linearly as a function of the annealing temperature due to evolution of oxides. However, anomalous decreases are observed at different temperatures ranges, this may be related to the improvement of the crystallization and crystallite size when the temperature increases. - Highlights: ► The crystallization and electrical resistivity of oxides in a Cu films are studied. ► In annealing Cu films, the phase evolution Cu + Cu 2 O → Cu 2 O → Cu 2 O + CuO → CuO occurs. ► A resistivity phase diagram, obtained from the current–voltage response, is presented. ► Some decreases in the resistivity may be related to the crystallization.

Properties of Spray Pyrolysied Copper Oxide Thin Films

Directory of Open Access Journals (Sweden)

S. S. Roy

2017-02-01

Full Text Available Copper oxide (CuO thin films were deposited on well cleaned glass substrates by spray pyrolysis technique (SPT from cupric acetate (Cu(CH3COO2.H2O precursor solutions of 0.05 – 0.15 M molar concentrations (MC at a substrate temperature of 350 °C and at an air pressure of 1 bar. Effect of varying MC on the surface morphology, structural optical and electrical properties of CuO thin films were investigated. XRD patterns of the prepared films revealed the formation of CuO thin films having monoclinic structure with the main CuO (111 orientation and crystalline size ranging from 8.02 to 9.05 nm was observed. The optical transmission of the film was found to decrease with the increase of MC. The optical band gap of the thin films for 0.10 M was fond to be 1.60 eV. The room temperature electrical resistivity varies from 31 and 24 ohm.cm for the films grown with MC of 0.05 and 0.10 M respectively. The change in resistivity of the films was studied with respect to the change in temperature was shown that semiconductor nature is present. This information is expected to underlie the successful development of CuO films for solar windows and other semi-conductor applications including gas sensors.

Synthesis, structure and magnetic properties of crystallographically aligned CuCr{sub 2}Se{sub 4} thin films

Energy Technology Data Exchange (ETDEWEB)

Esters, Marco [Department of Chemistry, University of Oregon, Eugene, OR 97403 (United States); Liebig, Andreas [Institut für Physik, Universität Augsburg, 86159 Augsburg (Germany); Ditto, Jeffrey J.; Falmbigl, Matthias [Department of Chemistry, University of Oregon, Eugene, OR 97403 (United States); Albrecht, Manfred [Institut für Physik, Universität Augsburg, 86159 Augsburg (Germany); Johnson, David C., E-mail: davej@uoregon.edu [Department of Chemistry, University of Oregon, Eugene, OR 97403 (United States)

2016-06-25

We report the low temperature synthesis of highly textured CuCr{sub 2}Se{sub 4} thin films using the modulated elemental reactant (MER) method. The structure of CuCr{sub 2}Se{sub 4} is determined for the first time in its thin film form and exhibits cell parameters that are smaller than found in bulk CuCr{sub 2}Se{sub 4}. X-ray diffraction and precession electron diffraction show a strong degree of crystallographic alignment of the crystallites, where the <111> axis is oriented perpendicular to the substrate surface, while being rotationally disordered within the plane. Temperature and field dependent in-plane and out-of-plane magnetization measurements show that the film is ferromagnetic with a Curie temperature of 406 K CuCr{sub 2}Se{sub 4} synthesized utilizing the MER method shows stronger magnetic anisotropy (effective anisotropy: 1.82 × 10{sup 6} erg cm{sup −3}; shape anisotropy: 1.07 × 10{sup 6} erg cm{sup −3}), with the easy axis lying out of plane, and a larger magnetic moment (6 μ{sub B}/f.u.) than bulk CuCr{sub 2}Se{sub 4}. - Highlights: • Crystallographically aligned, phase pure CuCr{sub 2}Se{sub 4} were synthesized. • The degree of alignment decreases with annealing time. • The films are ferromagnetic with the easy axis along the <111> direction. • The magnetization is larger than bulk CuCr{sub 2}Se{sub 4} or other CuCr{sub 2}Se{sub 4} films made to date.

Formation dynamics of FeN thin films on Cu(100)

KAUST Repository

Heryadi, Dodi

2012-01-01

To investigate the structural and magnetic properties of thin films of FeN we have performed ab initio molecular dynamics simulations of their formation on Cu(100) substrates. The iron nitride layers exhibit a p4gm(2 × 2) reconstruction and order ferromagnetically in agreement with experiment. We establish the dynamics and time scale of the film formation as a function of the film thickness. The process is split in two phases: formation of almost flat FeN layers and optimization of the distance to the substrate. Our calculated magnetic moments are 1.67 μ B, 2.14 μ B, and 2.21 μ B for one, two, and three monolayers of iron nitride. © 2011 Elsevier B.V. All rights reserved.

Quantized dissipation and random telegraph voltage noise in epitaxial BiSrCaCuO thin films

International Nuclear Information System (INIS)

Jung, G.; Savo, B.; Vecchione, A.

1993-01-01

In this paper we report on the observation of correlated multiple-voltage RTN switching in high quality epitaxial BiSrCaCuO thin film. We ascribe the correlated noise to the quantization of flux flow dissipation in the film. (orig.)

Low temperature interdiffusion in Cu/Ni thin films

International Nuclear Information System (INIS)

Lefakis, H.; Cain, J.F.; Ho, P.S.

1983-01-01

Interdiffusion in Cu/Ni thin films was studied by means of Auger electron spectroscopy in conjunction with Ar + ion sputter profiling. The experimental conditions used aimed at simulating those of typical chip-packaging fabrication processes. The Cu/Ni couple (from 10 μm to 60 nm thick) was produced by sequential vapor deposition on fused-silica substrates at 360, 280 and 25 0 C in 10 - 6 Torr vacuum. Diffusion anneals were performed between 280 and 405 0 C for times up to 20 min. Such conditions define grain boundary diffusion in the regimes of B- and C-type kinetics. The data were analyzed according to the Whipple-Suzuoka model. Some deviations from the assumptions of this model, as occurred in the present study, are discussed but cannot fully account for the typical data scatter. The grain boundary diffusion coefficients were determined allowing calculation of respective permeation distances. (Auth.)

Passivation of defects in polycrystalline Cu2O thin films by hydrogen or cyanide treatment

International Nuclear Information System (INIS)

Ishizuka, S.; Kato, S.; Okamoto, Y.; Sakurai, T.; Akimoto, K.; Fujiwara, N.; Kobayashi, H.

2003-01-01

The effects of the passivation of defects in polycrystalline nitrogen-doped cuprous oxide (Cu 2 O) thin films with hydrogen or cyanide treatment were studied. In the photoluminescence (PL) measurements, although the emission was not observed before treatment, luminescence of Cu 2 O at around 680 nm was observed after each treatment. This improvement in the luminescence property may be due to the passivation of non-radiative recombination centers by H or CN. The hole carrier concentration increased from the order of 10 16 to 10 17 cm -3 with hydrogen or cyanide treatment. From these results, both the hydrogen and cyanide treatments were found to be very effective to passivate defects and improve the optical and electrical properties of polycrystalline Cu 2 O thin films. The thermal stability of the passivation effects by the cyanide treatment is, however, superior to that by the hydrogen treatment

In-situ XRD study of alloyed Cu2ZnSnSe4-CuInSe2 thin films for solar cells

International Nuclear Information System (INIS)

Hartnauer, Stefan; Wägele, Leonard A.; Jarzembowski, Enrico; Scheer, Roland

2015-01-01

We investigate the growth of Cu 2 ZnSnSe 4 -CuInSe 2 (CZTISe) thin films using a 2-stage (Cu-rich/Cu-free) co-evaporation process under simultaneous application of in-situ angle dispersive X-ray diffraction (XRD). In-situ XRD allows monitoring the phase formation during preparation. A variation of the content of indium in CZTISe leads to a change in the lattice constant. Single phase CZTISe is formed in a wide range, while at high In contents a phase separation is detected. Because of different thermal expansion coefficients, the X-ray diffraction peaks of ZnSe and CZTISe can be distinguished at elevated substrate temperatures. The formation of ZnSe appears to be inhibited even for low indium content. In-situ XRD shows no detectable sign for the formation of ZnSe. First solar cells of CZTISe have been prepared and show comparable performance to CZTSe. - Highlights: • In-situ XRD study of two-stage co-evaporated Cu 2 ZnSnSe 4 -CuInSe 2 alloyed thin films. • No detection of ZnSe with in-situ XRD due to Indium incorporation • Comparable efficiency of alloyed solar cells

Optical and structural properties of CuSbS2 thin films grown by thermal evaporation method

International Nuclear Information System (INIS)

Rabhi, A.; Kanzari, M.; Rezig, B.

2009-01-01

Structural, optical and electrical properties of CuSbS 2 thin films grown by thermal evaporation have been studied relating the effects of substrate heating conditions of these properties. The CuSbS 2 thin films were carried out at substrate temperatures in the temperature range 100-200 deg. C . The structure and composition were characterized by XRD, SEM and EDX. X-ray diffraction revealed that the films are (111) oriented upon substrate temperature 170 deg. C and amorphous for the substrate temperatures below 170 deg. C . No secondary phases are observed for all the films. The optical absorption coefficients and band gaps of the films were estimated by optical transmission and reflection measurements at room temperature. Strong absorption coefficients in the range 10 5 -10 6 cm -1 at 500 nm were found. The direct gaps Eg lie between 0.91-1.89 eV range. It is observed that there is a decrease in optical band gap Eg with increasing the substrate temperature. Resistivity of 0.03-0.96 Ω cm, in dependence on substrate temperature was characterized. The all unheated films exhibit p-type conductivity. The characteristics reported here also offer perspective for CuSbS 2 as an absorber material in solar cells applications

Development of p-type amorphous Cu{sub 1−x}B{sub x}O{sub 2−δ} thin films and fabrication of pn hetero junction

Energy Technology Data Exchange (ETDEWEB)

Sanal, K.C., E-mail: sanalcusat@gmail.com [Nanophotonic and Optoelectronic Devices Laboratory, Department of Physics, Cochin University of Science and Technology, Kerala 682022 (India); Inter University Center for Nanomaterials and Devices (IUCND), Cochin University of Science and Technology, Kerala 682022 (India); Center for Advanced Materials, Cochin University of Science and Technology, Kerala 682022 (India); Jayaraj, M.K., E-mail: mkj@cusat.ac.in [Nanophotonic and Optoelectronic Devices Laboratory, Department of Physics, Cochin University of Science and Technology, Kerala 682022 (India); Center for Advanced Materials, Cochin University of Science and Technology, Kerala 682022 (India)

2014-07-01

Highlights: • Growth of p-type semiconducting amorphous Cu{sub 1−x}B{sub x}O{sub 2−δ} thin films by co-sputtering. • Atomic percentage of Cu{sub 1−x}B{sub x}O{sub 2−δ} thin films from the XPS analysis. • Variation of bandgap with boron concentration in Cu{sub 1−x}B{sub x}O{sub 2−δ} thin films. • Demonstration of p–n hetero junctions fabricated in the structure n-Si/p-Cu{sub 1−x}B{sub x}O{sub 2−δ}/Au. - Abstract: Transparent conducting amorphous p type Cu{sub 1−x}B{sub x}O{sub 2−δ} thin films were grown by RF magnetron co-sputtering at room temperature, using copper and boron targets in oxygen atmosphere. The structural, electrical as well as optical properties were studied. Composition of the films was analyzed by XPS. Amorphous structure of as deposited films was confirmed by GXRD. Surface morphology of the films was analyzed by AFM studies. p-Type nature and concentration of carriers were investigated by Hall effect measurement. Band gap of the films was found to increase with the atomic content of boron in the film. A p–n hetero junction using p-type Cu{sub 1−x}B{sub x}O{sub 2−δ} and n-type silicon was fabricated in the structure n-Si/p-Cu{sub 1−x}B{sub x}O{sub 2−δ}/Au which showed rectifying behavior. As deposited amorphous Cu{sub 1−x}B{sub x}O{sub 2−δ} thin films with lower carrier concentration can be used as a channel layer for thin film transistors.

Spray pyrolyzed Cu2SnS3 thin films for photovoltaic application

Science.gov (United States)

Patel, Biren; Waldiya, Manmohansingh; Pati, Ranjan K.; Mukhopadhyay, Indrajit; Ray, Abhijit

2018-05-01

We report the fabrication of Cu2SnS3 (CTS) thin films by a non-vacuum and low cost spray pyrolysis technique. Annealing of the as-deposited film in the sulphur atmosphere produces highly stoichiometric, granular and crystalline CTS phase. The CTS thin films shows direct optical band gap of 1.58 eV with high absorption coefficient of 105 cm-1. Hall measurement shows the carrier concentration of the order of 1021 cm-3 and a favourable resistivity of 10-3 Ω cm. A solar cell architecture of Glass/FTO/CTS/CdS/Al:ZnO/Al was fabricated and its current-voltage characteristic shows an open circuit voltage, short circuit current density and fill-factor of 12.6 mV, 20.2 µA/cm2 and 26% respectively. A further improvement in the solar cell parameters is underway.

Effects of substrate temperature and Cu underlayer thickness on the formation of SmCo5(0001) epitaxial thin films

International Nuclear Information System (INIS)

Ohtake, Mitsuru; Nukaga, Yuri; Futamoto, Masaaki; Kirino, Fumiyoshi

2010-01-01

SmCo 5 (0001) epitaxial thin films were prepared on Cu(111) underlayers heteroepitaxially grown on Al 2 O 3 (0001) single-crystal substrates by molecular beam epitaxy. The effects of substrate temperature and Cu underlayer thickness on the crystallographic properties of SmCo 5 (0001) epitaxial films were investigated. The Cu atoms of underlayer diffuse into the SmCo 5 film and substitute the Co sites in SmCo 5 structure forming an alloy compound of Sm(Co,Cu) 5 . The ordered phase formation is enhanced with increasing the substrate temperature and with increasing the Cu underlayer thickness. The Cu atom diffusion into the SmCo 5 film is assisting the formation of Sm(Co,Cu) 5 ordered phase.

Smooth surfaces in very thin GdBa2Cu3O7−δ films for application in superconducting tunnel junctions

International Nuclear Information System (INIS)

Navarro, H.; Sirena, M.; Kim, Jeehoon; Haberkorn, N.

2015-01-01

Highlights: • A detailed study of the morphological properties of GdBa 2 Cu 3 O 7−δ thin films was realized. • The inclusion of a very thin SrTiO 3 buffer layer modifies the surface of the SrTiO 3 substrates. • The inclusion of the buffer layer suppress the three dimensional nucleation in the GdBa 2 Cu 3 O 7−δ film. • GdBa 2 Cu 3 O 7−δ films with large areas free of topological defects and T c close to liquid nitrogen can be obtained. - Abstract: This paper provides a systematic analysis of the morphology and the superconducting critical temperature obtained in very thin GdBa 2 Cu 3 O 7−δ films grown on (0 0 1) SrTiO 3 substrates by DC sputtering. We find that the use of a very thin SrTiO 3 buffer layer (≈2 nm) modify the nucleation of GdBa 2 Cu 3 O 7−δ on the surface of the substrate reducing the formation of 3 dimensional clusters. Our results demonstrate that 16 nm thick GdBa 2 Cu 3 O 7−δ films with an average root-mean-square (RMS) smaller than 1 nm and large surface areas (up 10 μm 2 ) free of 3 dimensional topological defects can be obtained. In films thinner than 24 nm the onset (zero resistance) of superconducting transition of the films is reduced, being close to liquid nitrogen. This fact can be associated with stress reducing the orthorhombicity and slightly drop in oxygen stoichiometry

Synthesis of nanostructured CuInS{sub 2} thin films and their application in dye-sensitized solar cells

Energy Technology Data Exchange (ETDEWEB)

Zhao, Yu; Zhuang, Mixue; Liu, Zhen; Wei, Aixiang [Guangdong University of Technology, Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter, School of Material and Energy, Guangzhou (China); Luo, Fazhi [Guangdong University of Technology, Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter, School of Material and Energy, Guangzhou (China); The Fifth Electronics Research Institute of Ministry of Industry and Information Technology, Guangzhou (China); Liu, Jun [Guangdong University of Technology, Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter, School of Material and Energy, Guangzhou (China); Zhejiang University, State Key Lab of Silicon Materials, Hangzhou (China)

2016-03-15

CuInS{sub 2} (CIS) nanostructure thin films were successfully synthesized on FTO conductive glass substrates by solvothermal method. It is found that the surface morphology and microstructure of CIS thin films can be tailored by simply adjusting the concentration of oxalic acid. CIS nanostructure films with texture of ''nanosheet array'' and ''flower-like microsphere'' were obtained and used as Pt-free counter electrode for dye-sensitized solar cells (DSSCs). The nanosheet array CIS was found to have a better electrocatalytic activity than the flower-like microsphere one. DSSCs based on nanosheet array CIS thin film counter electrode show conversion efficiency of 3.33 %, which is comparable to the Pt-catalyzed DSSCs. The easy synthesis, low cost, morphology tunable and excellent electrocatalytic property may make the CuInS{sub 2} nanostructure competitive as counter electrode in DSSCs. (orig.)

Hydrogen effects on deep level defects in proton implanted Cu(In,Ga)Se{sub 2} based thin films

Energy Technology Data Exchange (ETDEWEB)

Lee, D.W.; Seol, M.S.; Kwak, D.W.; Oh, J.S. [Department of Physics, Dongguk University, Seoul 100-715 (Korea, Republic of); Jeong, J.H. [Photo-electronic Hybrids Research Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); Cho, H.Y., E-mail: hycho@dongguk.edu [Department of Physics, Dongguk University, Seoul 100-715 (Korea, Republic of)

2012-08-01

Hydrogen effects on deep level defects and a defect generation in proton implanted Cu(In,Ga)Se{sub 2} (CIGS) based thin films for solar cell were investigated. CIGS films with a thickness of 3 {mu}m were grown on a soda-lime glass substrate by a co-evaporation method, and then were implanted with protons. To study deep level defects in the proton implanted CIGS films, deep level transient spectroscopy measurements on the CIGS-based solar cells were carried out, these measurements found 6 traps (including 3 hole traps and 3 electron traps). In the proton implanted CIGS films, the deep level defects, which are attributed to the recombination centers of the CIGS solar cell, were significantly reduced in intensity, while a deep level defect was generated around 0.28 eV above the valence band maximum. Therefore, we suggest that most deep level defects in CIGS films can be controlled by hydrogen effects. - Highlights: Black-Right-Pointing-Pointer Proton implanted Cu(In,Ga)Se{sub 2} thin film and solar cell are prepared. Black-Right-Pointing-Pointer Deep level defects of Cu(In,Ga)Se{sub 2} thin film and solar cell are investigated. Black-Right-Pointing-Pointer Hydrogenation using proton implantation and H{sub 2} annealing reduces deep level defects. Black-Right-Pointing-Pointer Hydrogenation could enhance electrical properties and efficiency of solar cells.

Electrochemically modified crystal orientation, surface morphology and optical properties using CTAB on Cu2O thin films

Directory of Open Access Journals (Sweden)

Karupanan Periyanan Ganesan

Full Text Available Cuprous oxide (Cu2O thin films with different crystal orientations were electrochemically deposited in the presence of various molar concentrations of cetyl trimethyl ammonium bromide (CTAB on fluorine doped tin oxide (FTO glass substrate using standard three electrodes system. X-ray diffraction (XRD studies reveal cubic structure of Cu2O with (111 plane orientation, after addition of CTAB in deposition solution, the orientation of crystal changes from (111 into (200 plane. Scanning electron microscope (SEM images explored significant variation on morphology of Cu2O thin films deposited with addition of CTAB compared to without addition of CTAB. Photoluminescence (PL spectra illustrate that the emission peak around at 650 nm is attributed to near band edge emission, and the film prepared at the 3 mM of CTAB exhibits much higher intensity than that of the all other films. UV–Visible spectra show optical absorption in the range of 480–610 nm and the highest transparency of Cu2O film prepared at the concentration of 3 mM CTAB. The optical band gap is increased in the range between 2.16 and 2.45 eV with increasing the CTAB concentrations. Keywords: Cuprous oxide, Crystal orientation, Electrodeposition and cubic structure

Structure, morphology and optical properties of CuInS2 thin films prepared by modulated flux deposition

International Nuclear Information System (INIS)

Guillen, C.; Herrero, J.; Gutierrez, M.T.; Briones, F.

2005-01-01

The structure, morphology and optical properties of copper indium sulfide thin films prepared by a novel modulated flux deposition procedure have been investigated for layers from 200 to 400 nm thickness. These polycrystalline CuInS 2 films grown onto glass substrates showed CuAu-like structure, similar to epitaxial CuInS 2 films grown onto monocrystalline substrates, and direct band gap values Eg=1.52-1.55 eV, optimum for single-junction photovoltaic applications. The increase in the layer thickness leads to growth of the average crystallite size and increases slightly the surface roughness and the absorption coefficient

Preparation, microwave and magnetic field response of YBaCuO thin film microbridges

NARCIS (Netherlands)

Hauser, B.; Klopman, B.B.G.; Rogalla, Horst

1989-01-01

On YBaCuO thin films, which were deposited at ambient temperature and were superconducting after post-deposition annealing in oxygen, microbridges and d.c. superconducting quantium interference devices (SQUIDs) were constructed by lift-off. Over a temperature range from 4.2 to > 70 K the devices

Microstructure and Electrical Properties of Fe,Cu Substituted (Co,Mn)3O4 Thin Films

DEFF Research Database (Denmark)

Szymczewska, Dagmara; Molin, Sebastian; Hendriksen, Peter Vang

2017-01-01

In this work, thin films (~1000 nm) of a pure MnCo2O4 spinel together with its partially substituted derivatives (MnCo1.6Cu0.2Fe0.2O4, MnCo1.6Cu0.4O4, MnCo1.6Fe0.4O4) were prepared by spray pyrolysis and were evaluated for electrical conductivity. Doping by Cu increases the electrical conductivit...

Control of gallium incorporation in sol–gel derived CuIn(1−x)GaxS2 thin films for photovoltaic applications

International Nuclear Information System (INIS)

Bourlier, Yoan; Cristini Robbe, Odile; Lethien, Christophe

2015-01-01

Highlights: • CuIn (1−x) Ga x S 2 thin films were prepared by sol–gel process. • Evolution of lattice parameters is characteristic of a solid solution. • Optical band gap was found to be linearly dependent on the gallium rate. - Abstract: In this paper, we report the elaboration of Cu(In,Ga)S 2 chalcopyrite thin films via a sol–gel process. To reach this aim, solutions containing copper, indium and gallium complexes were prepared. These solutions were thereafter spin-coated onto the soda lime glass substrates and calcined, leading to metallic oxides thin films. Expected chalcopyrite films were finally obtained by sulfurization of oxides layers using a sulfur atmosphere at 500 °C. The rate of gallium incorporation was studied both at the solutions synthesis step and at the thin films sulfurization process. Elemental and X-ray diffraction (XRD) analyses have shown the efficiency of monoethanolamine used as a complexing agent for the preparation of CuIn (1−x) Ga x S 2 thin layers. Moreover, the replacement of diethanolamine by monoethanolamine has permitted the substitution of indium by isovalent gallium from x = 0 to x = 0.4 and prevented the precipitation of copper derivatives. XRD analyses of sulfurized thin films CuIn (1−x) Ga x S 2, clearly indicated that the increasing rate of gallium induced a shift of XRD peaks, revealing an evolution of the lattice parameter in the chalcopyrite structure. These results were confirmed by Raman analyses. Moreover, the optical band gap was also found to be linearly dependent upon the gallium rate incorporated within the thin films: it varies from 1.47 eV for x = 0 to 1.63 eV for x = 0.4

Antimicrobial activities of CuO films deposited on Cu foils by solution chemistry

Energy Technology Data Exchange (ETDEWEB)

Ekthammathat, Nuengruethai [Department of Chemistry, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thongtem, Titipun, E-mail: ttpthongtem@yahoo.com [Department of Chemistry, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Materials Science Research Center, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thongtem, Somchai, E-mail: schthongtem@yahoo.com [Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Materials Science Research Center, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand)

2013-07-15

Monoclinic CuO thin films on Cu foils were successfully synthesized by a simple wet chemical method in alkaline solution with the pH of 13 at room temperature for different lengths of time. The as-synthesized thin films were characterized by X-ray diffraction (XRD), Fourier transform infrared (FTIR) spectroscopy, scanning electron microscopy (SEM), transmission electron microscopy (TEM) and selected area electron diffraction (SAED). Formation mechanism of the phase and morphologies was also discussed according to the experimental results. In this research, assemblies of pure CuO nanospindles with different orientations containing in the thin film synthesized for 2 weeks with 400 nm and 413 nm violet emissions showed better antimicrobial activity against S. aureus than E. coli.

Antimicrobial activities of CuO films deposited on Cu foils by solution chemistry

International Nuclear Information System (INIS)

Ekthammathat, Nuengruethai; Thongtem, Titipun; Thongtem, Somchai

2013-01-01

Monoclinic CuO thin films on Cu foils were successfully synthesized by a simple wet chemical method in alkaline solution with the pH of 13 at room temperature for different lengths of time. The as-synthesized thin films were characterized by X-ray diffraction (XRD), Fourier transform infrared (FTIR) spectroscopy, scanning electron microscopy (SEM), transmission electron microscopy (TEM) and selected area electron diffraction (SAED). Formation mechanism of the phase and morphologies was also discussed according to the experimental results. In this research, assemblies of pure CuO nanospindles with different orientations containing in the thin film synthesized for 2 weeks with 400 nm and 413 nm violet emissions showed better antimicrobial activity against S. aureus than E. coli.

Investigations on the role of alkali to obtain modulated defect concentrations for Cu{sub 2}O thin films

Energy Technology Data Exchange (ETDEWEB)

Chowdhury, Anirban, E-mail: anirban.chowdhury@gmail.com [Research and Development, Tata Steel Limited, Jamshedpur, 831001 (India); Bijalwan, Pavan Kumar [Research and Development, Tata Steel Limited, Jamshedpur, 831001 (India); Sahu, Ranjan Kumar [MST Division, CSIR-National Metallurgical Laboratory, Jamshedpur, 831007 (India)

2014-01-15

An economic successive ionic layer adsorption and reaction (SILAR) method has been investigated for depositing thin Cu{sub 2}O layers on steel. The mole ratios of the Cu{sup +} ions to OH{sup −} ions in the alkali bath were varied and the changes in the properties were characterised by X-ray photoelectron spectroscopy (XPS), photoluminescence (PL) spectroscopy, scanning electron microscopy (SEM) and Ultraviolet–visible spectroscopy techniques. The increase in the binding energy values of the Cu 2p peaks in XPS established that an optimum copper vacancy concentration can be obtained for a Cu{sup +}/OH{sup −} mole ratio between 1:10 and 1:15; SEM studies confirmed a dense, uniform microstructure for Cu{sub 2}O thin films coated with these compositions. The strongest absolute peak intensity counts in PL for the peak at 580 nm along with low energy peaks (1.2–1.4 eV) due to Cu vacancy was found to be most prominent for thin film made with Cu{sup +}/OH{sup −} mole ratio 1:15. The role of alkali concentration has been explained in relation to create a stable Cu{sub 2−δ}O structure with optimum copper vacancy. This is an easy way to modulate surface reactivity of the Cu{sub 2}O thin layers and the concept can be utilised for large area device integrations for various electrical and mechanical applications.

Thin-film photovoltaic technology

Energy Technology Data Exchange (ETDEWEB)

Bhattacharya, R.N. [National Renewable Energy Laboratory, Golden, CO (United States)

2010-07-01

The high material and processing costs associated with single-crystal and polycrystalline silicon wafers that are commonly used in photovoltaic cells render these modules expensive. This presentation described thin-film solar cell technology as a promising alternative to silicon solar cell technology. Cadmium telluride (CdTe) thin films along with copper, indium, gallium, and selenium (CIGS) thin films have become the leaders in this field. Their large optical absorption coefficient can be attributed to a direct energy gap that allows the use of thin layers (1-2 {mu}m) of active material. The efficiency of thin-film solar cell devices based on CIGS is 20 per cent, compared to 16.7 per cent for thin-film solar cell devices based on CdTe. IBM recently reported an efficiency of 9.7 per cent for a new type of inorganic thin-film solar cell based on a Cu{sub 2}ZnSn(S, Se){sub 4} compound. The efficiency of an organic thin-film solar cell is 7.9 per cent. This presentation included a graph of PV device efficiencies and discussed technological advances in non-vacuum deposited, CIGS-based thin-film solar cells. 1 fig.

Use of low-temperature nanostructured CuO thin films deposited by spray-pyrolysis in lithium cells

International Nuclear Information System (INIS)

Morales, J.; Sanchez, L.; Martin, F.; Ramos-Barrado, J.R.; Sanchez, M.

2005-01-01

Nanostructured CuO thin films were prepared by spray pyrolysis of aqueous copper acetate solutions at temperatures over 200-300 deg C range. The textural and structural properties of the films were determined by scanning electron microscopy, atomic force microscopy, X-ray diffraction spectroscopy and X-ray photoelectron spectroscopy (XPS). Although the sole crystalline phase detected in the film was CuO, XPS spectra revealed a more complex surface structure due to the presence of undecomposed copper acetate that can be easily removed by Ar + ion sputtering. The heating temperature was found to have little limited effect on the particle size and thickness of the films, which, however, increased significantly increasing deposition time. The film with the smallest grain size exhibited an excellent electrochemical response in Li battery electrodes and was capable of supplying sustained specific capacity as high as 625 A h kg -1 (50% greater than that delivered by bulk CuO and close to the theoretical capacity for the CuO Cu reaction) upon extensive cycling

Structural, optical and electrical properties of CuInS{sub 2} thin films prepared by chemical spray pyrolysis

Energy Technology Data Exchange (ETDEWEB)

Terasako, Tomoaki; Uno, Yuji; Inoue, Seiki; Shirakata, Sho [Faculty of Engineering, Ehime University, 3 Bunkyo-cho, Matsuyama 780-8577 (Japan); Kariya, Tetsuya [Faculty of Science, Kochi University, Akebono-cho, Kochi, 780-8072 (Japan)

2006-09-15

Polycrystalline CuInS{sub 2} thin films were prepared by chemical spray pyrolisis (CSP) on glass substrate from the ethanol aqueous solution containing CuCl{sub 2}, InCl{sub 3} and thiourea. Structural, electrical and optical properties were systematically studied in terms of substrate temperature, pH and the ion ratio (Cu/In) of the spray solution. Although the In-rich films were composed of CuInS{sub 2} and In{sub 2}S{sub 3}, the In{sub 2}S{sub 3} content in the film decreased with Cu/In ratio. Appearance of Raman peaks at 288 and 298 cm{sup -1} indicated that the films contained CuInS{sub 2} with chalcopyrite and CuAu phases. Typical grain size in the Cu-rich films was 200 nm. Optical gap energies were approximately 0.1-0.2eV smaller than the bandgap energy of the CuInS{sub 2} bulk crystal. Resistivity of the Cu-rich films without In{sub 2}S{sub 3} secondary phase was 0.2-5 {omega}cm. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Y-Ba-Cu-O superconducting thin films by simultaneous or sequential evaporation

International Nuclear Information System (INIS)

Mogro-Campero, A.; Hunt, B.D.; Turner, L.G.; Burrell, M.C.; Balz, W.E.

1988-01-01

Superconducting thin films of Y-Ba-Cu-O near the 1:2:3 stoichiometry were produced by simultaneous (coevaporation) and sequential (multilayer) evaporation in the same evaporator. The best film obtained on yttria-stabilized zirconia (YSZ) had a superconducting onset temperature of 104 K, a midpoint T/sub c/ of 92 K, and zero resistance at T≤74 K. Stoichiometry was deduced by inductively coupled plasma emission spectroscopy, and elemental depth profiles were obtained by x-ray photoelectron spectroscopy. Film stoichiometry changes only near the film/substrate boundary for films on YSZ. Films on Si/SiO 2 were not superconducting; depth profiling shows severe changes of film composition with depth. A major theme of this work is process reproducibility, which was found to be poor for coevaporation but improved considerably for sequential evaporation

CuAlO2 and CuAl2O4 thin films obtained by stacking Cu and Al films using physical vapor deposition

Science.gov (United States)

Castillo-Hernández, G.; Mayén-Hernández, S.; Castaño-Tostado, E.; DeMoure-Flores, F.; Campos-González, E.; Martínez-Alonso, C.; Santos-Cruz, J.

2018-06-01

CuAlO2 and CuAl2O4 thin films were synthesized by the deposition of the precursor metals using the physical vapor deposition technique and subsequent annealing. Annealing was carried out for 4-6 h in open and nitrogen atmospheres respectively at temperatures of 900-1000 °C with control of heating and cooling ramps. The band gap measurements ranged from 3.3 to 4.5 eV. Electrical properties were measured using the van der Pauw technique. The preferred orientations of CuAlO2 and CuAl2O4 were found to be along the (1 1 2) and (3 1 1) planes, respectively. The phase percentages were quantified using a Rietveld refinement simulation and the energy dispersive X-ray spectroscopy indicated that the composition is very close to the stoichiometry of CuAlO2 samples and with excess of aluminum and deficiency of copper for CuAl2O4 respectively. High resolution transmission electron microscopy identified the principal planes in CuAlO2 and in CuAl2O4. Higher purities were achieved in nitrogen atmosphere with the control of the cooling ramps.

Soft x-ray photoemission investigation of the oxidation of CuInSe/sub 2/ thin films

International Nuclear Information System (INIS)

Zurcher, P.; Nelson, A.J.; Johnson, P.; Lapeyre, G.J.; Noufi, R.

1987-01-01

CuInSe/sub 2/ films are used as absorber layers in heterojunction thin film solar cells. It has been demonstrated that, depending on the stoichiometry, oxygen annealing can make CuInSe/sub 2/ films more p-type or even convert n-type films into p-type while subsequent reduction with hydrazine will reverse such processes. Using synchrotron radiation soft x-ray photoemission spectroscopy, the authors found associated with the hydrazine reduced films an In1+ state that converts into In3+ under the influence of oxygen at elevated sample temperatures. The samples investigated were grown in a way that the top several thousand Angstroms are increasingly Cu-poor and In-rich. It is this region which is sampled by the surface sensitive technique of photoemission. The Cu-poor/In-rich top regions will most likely have a large number of intrinsic In on Cu-site defects leaving the In in a 1+ state. All the oxidation and reduction results and the associated changes in majority carrier concentrations and type conversions can be understood in terms of oxygem/In/sub Cu/-defect interactions

Influence of Sn incorporation on the properties of CuInS2 thin films grown by vacuum evaporation method

International Nuclear Information System (INIS)

Zribi, M.; Rabeh, M. Ben; Brini, R.; Kanzari, M.; Rezig, B.

2006-01-01

Structural, morphological and optical properties of Sn-doped CuInS 2 thin films grown by double source thermal evaporation method were studied. Firstly, the films were annealed in vacuum after evaporation from 250 to 500 deg. C for Sn deposition time equal to 3 min. Secondly, the films deposited for several Sn evaporation times were annealed in vacuum after evaporation at 500 deg. C. The X-ray diffraction spectra indicated that polycrystalline Sn-doped CuInS 2 films were obtained and no Sn binary or ternary phases are observed for the Sn evaporation times equal to 5 min. Scanning electron microscopy observation revealed the decrease of the surface crystallinity with increasing the Sn evaporation times and the annealing temperatures. The Sn-doped samples after annealing have bandgap energy of 1.42-1.50 eV. Furthermore, we found that the Sn-doped CuInS 2 thin films exhibit N-type conductivity after annealing

Investigations of structural, morphological and optical properties of Cu:ZnO/TiO2/ZnO and Cu:TiO2/ZnO/TiO2 thin films prepared by spray pyrolysis technique

Directory of Open Access Journals (Sweden)

M.I. Khan

Full Text Available The aim of this research work is presented a comparison study of Cu:ZnO/TiO2/ZnO (Cu:ZTZ and Cu:TiO2/ZnO/TiO2 (Cu:TZT thin films deposited by spray pyrolysis technique on FTO substrates. After deposition, these films are annealed at 500 °C. XRD confirms the anatase phase of TiO2 and Hexagonal wurtzite phase of ZnO. SEM shows that Cu:TZT has more porous surface than Cu:ZTZ and also the root mean square (RMS roughness of Cu:TZT film is 48.96 and Cu:ZTZ film is 32.69. The calculated optical band gaps of Cu:TZT and Cu:ZTZ thin films are 2.65 eV and 2.6 eV respectively, measured by UV–Vis spectrophotometer. This work provides an environment friendly and low cost use of an abundant material for highly efficient dye sensitized solar cells (DSSCs. Keywords: Multilayer films, ZnO, TiO2, Cu

Characterization of as-grown and Ge-ion implanted CuGaSe{sub 2} thin films prepared by the CCSVT technique

Energy Technology Data Exchange (ETDEWEB)

Doka Yamigno, Serge

2006-08-15

Single phase polycrystalline thin films of CuGaSe{sub 2} in the compositional range of 1.0=[Ga]/[Cu]=1.3, corresponding to a thickness ranging from 1.6 {mu}m to 1.9 {mu}m deposited onto plain or Mo-coated soda lime glass (SLG) were prepared and found to be polycrystalline with a strongly preferred <221> orientation. A combination of microstructural investigations of the films by TEM, EDX within the TEM and ERDA measurements has shown that CuGaSe{sub 2} thin films possess high crystalline bulk quality with Cu, Ga and Se homogeneously distributed within the CuGaSe{sub 2} bulk. One of the main result of this present work was found to be the accumulation of Ga in the region of the CuGaSe2/Mo interface and the dependence of the CuGaSe{sub 2} surface composition on the integral [Ga]/[Cu] ratio in the film, namely Ga- and Cu-poor, Se-rich surface for stoichiometric films; and Cu- poor, and Ga- and Se- rich surface for increasing [Ga]/[Cu] ratios. These observations were also supported by optical measurements carried out through photoluminescence and absorption measurements. In order to gain a better understanding of the influence of the extrinsic doping of the CuGaSe{sub 2} films and why many attempts towards the type inversion in the p-type CuGaSe2 compounds by varying the composition or by doping with extrinsic defects have failed, ion implantation was used to introduce Ge into CuGaSe{sub 2}. Photoluminescence of the Ge containing films has evidenced the presence of new defects such as donor levels in the band gap. Electron spin resonance measurements of the Ge- containing CuGaSe2 films has highlighted an additional ESR resonance observed at g=2.003 ascribed to donors. However, Curie paramagnetism up to room temperature for all the Ge implanted films, characteristic of localized states has been observed for this resonance. (orig.)

Cation disorder and gas phase equilibrium in an YBa 2Cu 3O 7- x superconducting thin film

Science.gov (United States)

Shin, Dong Chan; Ki Park, Yong; Park, Jong-Chul; Kang, Suk-Joong L.; Yong Yoon, Duk

1997-02-01

YBa 2Cu 3O 7- x superconducting thin films have been grown by in situ off-axis rf sputtering with varying oxygen pressure, Ba/Y ratio in a target, and deposition temperature. With decreasing oxygen pressure, increasing Ba/Y ratio, increasing deposition temperature, the critical temperature of the thin films decreased and the c-axis length increased. The property change of films with the variation of deposition variables has been explained by a gas phase equilibrium of the oxidation reaction of Ba and Y. Applying Le Chatelier's principle to the oxidation reaction, we were able to predict the relation of deposition variables and the resultant properties of thin films; the prediction was in good agreement with the experimental results. From the relation between the three deposition variables and gas phase equilibrium, a 3-dimensional processing diagram was introduced. This diagram has shown that the optimum deposition condition of YBa 2Cu 3O 7- x thin films is not a fixed point but can be varied. The gas phase equilibrium can also be applied to the explanation of previous results that good quality films were obtained at low deposition temperature using active species, such as O, O 3, and O 2+.

Structural and electrical properties of CuAlMo thin films prepared by magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Birkett, Martin, E-mail: martin.birkett@northumbria.ac.uk; Penlington, Roger; Wan, Chaoying; Zoppi, Guillaume

2013-07-01

The structural and electrical properties of a low resistivity CuAlMo thin film resistor material were investigated. The thin films were grown on Al{sub 2}O{sub 3} and glass substrates by direct current (dc) magnetron sputtering. The key electrical properties of sheet resistance, temperature coefficient of resistance (TCR) and resistance stability were investigated as a function of sputtering pressure and post-deposition heat treatment time and temperature. A low sputtering pressure range of 0.13 to 0.40 Pa produced CuAlMo films with sheet resistance in the range 0.1 to 0.2 Ω/□ and resistance stability of 0.45 to 0.65% with a TCR of − 90 ppm/°C which could be shifted to zero following annealing in air at 425 °C. Films grown at higher sputtering pressures of 0.53 to 0.80 Pa had increased sheet resistance in the range 0.4 to 0.6 Ω/□ and inferior stability of 0.8 to 1.7% with a more negative TCR of − 110 to − 180 ppm/°C which could not be shifted to zero following annealing. The stability of the films grown at 0.13 and 0.40 Pa could be further improved to < 0.25% with heat treatment, due to the formation of a protective aluminium oxide layer. A minimum dwell time of 3 h at 425 °C was required to stabilise the films and set the electrical properties. - Highlights: • Thin films of copper–aluminium–molybdenum were sputtered on alumina substrates. • Film properties were investigated with variation in process conditions. • Low sputtering pressure gave improved electrical performance. • Post deposition annealing in air further improved electrical performance.

Structural and electrical properties of CuAlMo thin films prepared by magnetron sputtering

International Nuclear Information System (INIS)

Birkett, Martin; Penlington, Roger; Wan, Chaoying; Zoppi, Guillaume

2013-01-01

The structural and electrical properties of a low resistivity CuAlMo thin film resistor material were investigated. The thin films were grown on Al 2 O 3 and glass substrates by direct current (dc) magnetron sputtering. The key electrical properties of sheet resistance, temperature coefficient of resistance (TCR) and resistance stability were investigated as a function of sputtering pressure and post-deposition heat treatment time and temperature. A low sputtering pressure range of 0.13 to 0.40 Pa produced CuAlMo films with sheet resistance in the range 0.1 to 0.2 Ω/□ and resistance stability of 0.45 to 0.65% with a TCR of − 90 ppm/°C which could be shifted to zero following annealing in air at 425 °C. Films grown at higher sputtering pressures of 0.53 to 0.80 Pa had increased sheet resistance in the range 0.4 to 0.6 Ω/□ and inferior stability of 0.8 to 1.7% with a more negative TCR of − 110 to − 180 ppm/°C which could not be shifted to zero following annealing. The stability of the films grown at 0.13 and 0.40 Pa could be further improved to < 0.25% with heat treatment, due to the formation of a protective aluminium oxide layer. A minimum dwell time of 3 h at 425 °C was required to stabilise the films and set the electrical properties. - Highlights: • Thin films of copper–aluminium–molybdenum were sputtered on alumina substrates. • Film properties were investigated with variation in process conditions. • Low sputtering pressure gave improved electrical performance. • Post deposition annealing in air further improved electrical performance

Experimental study of Pulsed Laser Deposited Cu2ZnSnS 4 (CZTS) thin films for photovoltaic applications

Science.gov (United States)

Nandur, Abhishek S.

Thin film solar cells are gaining momentum as a renewable energy source. Reduced material requirements (15 mum in total thickness) solar cells. Among the various thin film solar absorbers that have been proposed, CZTS (Cu2ZnSnS4) has become the subject of intense interest because of its optimal band gap (1.45 eV), high absorption coefficient (104 cm--1 ) and abundant elemental components. Pulsed Laser Deposition (PLD) provides excellent control over film composition since films are deposited under high vacuum with excellent stoichiometry transfer from the target. Defect-free, near-stoichiometric poly-crystalline CZTS thin films were deposited using PLD from a stoichiometrically close CZTS target (Cu2.6Zn1.1Sn0.7S3.44). The effects of fabrication parameters such as laser energy density, deposition time, substrate temperature and sulfurization (annealing in sulfur) on the surface morphology, composition and optical absorption of the CZTS thin films were examined. The results show that the presence of secondary phases, present both in the bulk and on the surface, affected the electrical and optical properties of the CZTS thin films and the CZTS based TFSCs. After selectively etching away the secondary phases with DIW, HCl and KCN, it was observed that their removal improved the performance of CZTS based TFSCs. Optimal CZTS thin films exhibited an optical band gap of 1.54 eV with an absorption coefficient of 4x10 4cm-1 with a low volume of secondary phases. A TFSC fabricated with the best CZTS thin film obtained from the experimental study done in this thesis showed a conversion efficiency of 6.41% with Voc = 530 mV, Jsc= 27.5 mA/cm2 and a fill factor of 0.44.

Epitaxial growth and properties of YBaCuO thin films

International Nuclear Information System (INIS)

Geerk, J.; Linker, G.; Meyer, O.

1989-08-01

The growth quality of YBaCuO thin films deposited by sputtering on different substrates (Al 2 O 3 , MgO, SrTiO 3 , Zr(Y)O 2 ) has been studied by X-ray diffraction and channeling experiments as a function of the deposition temperature. Besides the substrate orientation, the substrate temperature is the parameter determining whether films grow in c-, a-, (110) or mixed directions. Epitaxial growth correlates with high critical current values in the films of up to 5.5x10 6 A/cm 2 at 77 K. Ultrathin films with thicknesses down to 2 nm were grown revealing three-dimensional superconducting behaviour. Films on (100) SrTiO 3 of 9 nm thickness and below are partially strained indicating commensurate growth. From the analysis of the surface disorder 1 displaced Ba atom per Ba 2 Y row was obtained indicating that the disordered layer thickness is about 0.6 nm. Tunnel junctions fabricated on these films reveal gap-like structures near ±16 mV and ±30 mV. (orig.) [de

Influences of oxygen incorporation on the structural and optoelectronic properties of Cu{sub 2}ZnSnS{sub 4} thin films

Energy Technology Data Exchange (ETDEWEB)

Yu, Ruei-Sung, E-mail: rsyu@asia.edu.tw [Department of Photonics and Communication Engineering, Asia University, 500, Lioufeng Rd., Wufeng, Taichung 41354, Taiwan (China); Department of Medical Research, China Medical University Hospital, China Medical University, Taichung 40402, Taiwan (China); Hung, Ta-Chun [Department of Photonics and Communication Engineering, Asia University, 500, Lioufeng Rd., Wufeng, Taichung 41354, Taiwan (China)

2016-02-28

Highlights: • Oxygen incorporation in Cu{sub 2}ZnSnS{sub 4} changes the energy band structure. • The material has a comparatively high-absorptive capacity for short wavelength. • Absorption coefficients of the film increase from 10{sup 4} to 10{sup 5} cm{sup −1}. • The oxygen-containing CZTS film has a mixture of crystallite and crystalline states. • The material could be a candidate as an absorber layer in multi-junction solar cells. - Abstract: This study used the sol–gel method to prepare Cu{sub 2}ZnSnS{sub 4} thin films containing oxygen and explored the composition, structural, and optoelectronic properties of the films. The non-vacuum process enabled the oxygen content of the Cu{sub 2}ZnSnS{sub 4} films to be 8.89 at% and 10.30 at% for two different annealing conditions. In the crystal structure, oxygen was substituted at the positions of sulfur and appeared in the interstitial sites of the lattice. The compositions of the thin films deviated from the stoichiometric ratio. Both films had kesterite structures with no secondary phase structure. The kesterite CZTS film possessed a composite microstructure of crystallite and crystalline states. The microstructure of the Cu{sub 2}ZnSnS{sub 4} film with higher oxygen content was denser and the average grain size was smaller. Incorporating oxygen atoms into crystalline Cu{sub 2}ZnSnS{sub 4} changed the energy band structure: the direct energy band gaps were, respectively, 2.75 eV and 2.84 eV; the thin films mainly adsorbed photons with wavelengths less than 500 nm; and the absorption coefficients increased from 10{sup 4} cm{sup −1} to 10{sup 5} cm{sup −1}. The films had a comparatively high absorptive capacity for photons less than 350 nm. Increasing the oxygen content of the film lowered the resistivity. Thus, the oxygen-containing Cu{sub 2}ZnSnS{sub 4} thin film could be a candidate for the p-type absorber layer material required in multi-junction solar cells.

Fluorination of an epitaxial YBaCuO thin film with controlled oxygen vacancies

Energy Technology Data Exchange (ETDEWEB)

Perrin, C. (Lab. de Chimie du Solide et Inorganique Moleculaire, Univ. de Rennes 1, 35 (France)); Pena, O. (Lab. de Chimie du Solide et Inorganique Moleculaire, Univ. de Rennes 1, 35 (France)); Mokhtari, M. (Lab. de Chimie du Solide et Inorganique Moleculaire, Univ. de Rennes 1, 35 (France)); Thivet, C. (Lab. de Chimie du Solide et Inorganique Moleculaire, Univ. de Rennes 1, 35 (France)); Guilloux-Viry, M. (Lab. de Chimie du Solide et Inorganique Moleculaire, Univ. de Rennes 1, 35 (France)); Perrin, A. (Lab. de Chimie du Solide et Inorganique Moleculaire, Univ. de Rennes 1, 35 (France)); Sergent, M. (Lab. de Chimie du Solide et Inorganique Moleculaire, Univ. de Rennes 1, 35 (France))

1993-05-10

An intentionally oxygen-deficient thin film, epitaxially grown in-situ on a (100) MgO substrate by laser ablation at 750 C under a low pressure oxygen atmosphere, has been treated under NF[sub 3] diluted in N[sub 2] at temperatures not exceeding 280 C. During the fluorination process the epitaxy of the thin film is maintained; its Tc onset progressively increases from 54 K up to 85.6 K and the width of the inductive transition is narrow at the end of treatment (1.2 K). These results are discussed and compared to those obtained during the fluorination of oxygen-deficient YBa[sub 2]Cu[sub 3]O[sub x] ceramics. (orig.)

Structural characterization of a Cu(II) thin-film aging in a Cu-nitrate solution

International Nuclear Information System (INIS)

Mear, F.O.; Essi, M.; Sistat, P.; Guimon, M.-F.; Gonbeau, D.; Pradel, A.

2009-01-01

The response of thin-film copper (II) ion-selective electrodes based on chalcogenide glassy Cu-Sb-Ge-Se is described according to the soaking time in a 10 -4 M copper (II) solution. The chalcogenide membrane/solution interface has been investigated by using electrochemical impedance spectroscopy (EIS) and X-ray photoelectron spectroscopy (XPS) in order to understand the sensing properties. During the first month of the soaking, an alteration of the membrane by a chemical change without alteration of the sensor detection performance has been observed.

Ecofriendly and Nonvacuum Electrostatic Spray-Assisted Vapor Deposition of Cu(In,Ga)(S,Se)2 Thin Film Solar Cells.

Science.gov (United States)

Hossain, Md Anower; Wang, Mingqing; Choy, Kwang-Leong

2015-10-14

Chalcopyrite Cu(In,Ga)(S,Se)2 (CIGSSe) thin films have been deposited by a novel, nonvacuum, and cost-effective electrostatic spray-assisted vapor deposition (ESAVD) method. The generation of a fine aerosol of precursor solution, and their controlled deposition onto a molybdenum substrate, results in adherent, dense, and uniform Cu(In,Ga)S2 (CIGS) films. This is an essential tool to keep the interfacial area of thin film solar cells to a minimum value for efficient charge separation as it helps to achieve the desired surface smoothness uniformity for subsequent cadmium sulfide and window layer deposition. This nonvacuum aerosol based approach for making the CIGSSe film uses environmentally benign precursor solution, and it is cheaper for producing solar cells than that of the vacuum-based thin film solar technology. An optimized CIGSSe thin film solar cell with a device configuration of molybdenum-coated soda-lime glass substrate/CIGSSe/CdS/i-ZnO/AZO shows the photovoltaic (j-V) characteristics of Voc=0.518 V, jsc=28.79 mA cm(-2), fill factor=64.02%, and a promising power conversion efficiency of η=9.55% under simulated AM 1.5 100 mW cm(-2) illuminations, without the use of an antireflection layer. This demonstrates the potential of ESAVD deposition as a promising alternative approach for making thin film CIGSSe solar cells at a lower cost.

Effect of substituted rare earth element in (Yb1-xNd x)Ba2Cu3O y thin film on growth orientation and superconducting properties

International Nuclear Information System (INIS)

Honda, R.; Ichino, Y.; Yoshida, Y.; Takai, Y.; Matsumoto, K.; Ichinose, A.; Kita, R.; Mukaida, M.; Horii, S.

2005-01-01

We studied the orientation and superconducting properties in (Yb 1-x Nd x )Ba 2 Cu 3 O y (Yb/Nd123) thin films as a function of Yb/Nd composition ratio x. As a results, we needed so high oxygen pressure as to increase x for obtaining the c-axis oriented films. J c -B curves in the Yb/Nd123 thin films were superior to that in YBa 2 Cu 3 O y thin film. Since a RE fluctuation in a composition in the Yb/Nd123 thin films was observed with TEM-EDX, we speculated the pinning centers in the Yb/Nd123 thin films were strongly affected by the RE fluctuation

P-type Cu2O/SnO bilayer thin film transistors processed at low temperatures

KAUST Repository

Al-Jawhari, Hala A.

2013-10-09

P-type Cu2O/SnO bilayer thin film transistors (TFTs) with tunable performance were fabricated using room temperature sputtered copper and tin oxides. Using Cu2O film as capping layer on top of a SnO film to control its stoichiometry, we have optimized the performance of the resulting bilayer transistor. A transistor with 10 nm/15 nm Cu2O to SnO thickness ratio (25 nm total thickness) showed the best performance using a maximum process temperature of 170 C. The bilayer transistor exhibited p-type behavior with field-effect mobility, on-to-off current ratio, and threshold voltage of 0.66 cm2 V-1 s-1, 1.5×10 2, and -5.2 V, respectively. The advantages of the bilayer structure relative to single layer transistor are discussed. © 2013 American Chemical Society.

Surface study and thickness control of thin Al2O3 film on Cu-9%Al(111) single crystal

International Nuclear Information System (INIS)

Yamauchi, Yasuhiro; Yoshitake, Michiko; Song Weijie

2004-01-01

We were successful in growing a uniform flat Al 2 O 3 film on the Cu-9%Al(111) surface using the improved cleaning process, low ion energy and short time sputtering. The growth of ultra-thin film of Al 2 O 3 on Cu-9%Al was investigated using Auger electron spectroscopy (AES) and a scanning electron microscope (SEM). The Al 2 O 3 film whose maximum thickness was about 4.0 nm grew uniformly on the Cu-9%Al surface. The Al and O KLL Auger peaks of Al 2 O 3 film shifted toward low kinetic energy, and the shifts were related to Schottky barrier formation and band bending at the Al 2 O 3 /Cu-9%Al interface. The thickness of Al 2 O 3 film on the Cu-9%Al surface was controlled by the oxygen exposure

Phase transformation during simultaneous chalcogenization of CuIn(S,Se){sub 2} thin films using metalorganic sources

Energy Technology Data Exchange (ETDEWEB)

Shoji, Ryuki; Kayama, Yoshiki; Sugiyama, Mutsumi [Department of Electrical Engineering, Faculty of Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda 278-8510 (Japan); Chichibu, Shigefusa F. [Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba, Sendai 980-8577 (Japan)

2017-06-15

Simultaneous chalcogenization of CuIn(S{sub y},Se{sub 1-y}){sub 2} (CISSe) thin films has been demonstrated using organometallic sources such as diethylselenide [(C{sub 2}H{sub 5}){sub 2}Se] and ditertiarybutylsulfide [(t-C{sub 4}H{sub 9}){sub 2}S] to obtain homogeneous CISSe pseudobinary alloys with controlled amounts of Se and S species. Low-temperature chalcogenization at 300 C resulted in the formation of Cu-SSe and In-SSe alloys diffused into the Cu{sub 11}In{sub 9} metallic precursor. On the other hand, high-temperature chalcogenization produced CISSe thin films without additional phases. The obtained results can be used for elucidating the mechanism of simultaneous chalcogenization and development of high-performance and cost-effective commercial applications. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Synthesis and characterisation of Cu{sub 2}ZnSnSe{sub 4} thin films prepared via a vacuum evaporation-based route

Energy Technology Data Exchange (ETDEWEB)

Volobujeva, O., E-mail: v.olga@staff.ttu.ee; Bereznev, S.; Raudoja, J.; Otto, K.; Pilvet, M.; Mellikov, E.

2013-05-01

Different sequentially stacked binary chalcogenide layers (CuSe, ZnSe, and SnSe) deposited by vacuum evaporation onto molybdenum covered soda-lime glass substrates were used as precursors to form Cu{sub 2}ZnSnSe{sub 4} films. The influence of the stacked binary layer sequence, substrate temperature, both the duration and speed of deposition and the post deposition treatment atmosphere on the structural and the morphological parameters of the Cu{sub 2}ZnSnSe{sub 4} thin films was studied. Our results indicate the possibility of replacing the Se{sub 2} selenisation with a thermal treatment in an SnSe{sub 2} atmosphere to avoid the selenisation of the Mo substrate and MoSe{sub 2} formation. This SnSe{sub 2} treatment forms p-type Cu{sub 2}ZnSnSe{sub 4} films with an optical band-gap of 1.14 eV and a solar cell structure with an efficiency of up to 3%. - Highlights: ► Cu{sub 2}ZnSnSe{sub 4} thin films were grown using binary precursors and selenisation. ► Composition and morphology were studied in dependence of selenisation atmosphere. ► The use of SnSe{sub 2} selenisation allows to avoid Mo substrate selenisation. ► The high quality of films is indicated by the value of their E{sub g} = 1.14 eV. ► Cu{sub 2}ZnSnSe{sub 4} thin films were in p-type conductivity and were realized as solar cells.

Growth of Cu2ZnSnS4(CZTS) by Pulsed Laser Deposition for Thin film Photovoltaic Absorber Material

Science.gov (United States)

Nandur, Abhishek; White, Bruce

2014-03-01

CZTS (Cu2ZnSnS4) has become the subject of intense interest because it is an ideal candidate absorber material for thin-film solar cells with an optimal band gap (1.5 eV), high absorption coefficient (104 cm-1) and abundant elemental components. Pulsed Laser Deposition (PLD) provides excellent control over film composition since thin films are deposited under high vacuum with excellent stoichiometry transfer from the target. CZTS thin films were deposited using PLD from a stoichiometrically close CZTS target (Cu2.6Zn1.1Sn0.7S3.44). The effects of laser energy fluence and substrate temperature and post-deposition sulfur annealing on the surface morphology, composition and optical absorption have been investigated. Optimal CZTS thin films exhibited a band gap of 1.54 eV with an absorption coefficient of 4x104cm-1. A solar cell utilizing PLD grown CZTS with the structure SLG/Mo/CZTS/CdS/ZnO/ITO showed a conversion efficiency of 5.85% with Voc = 376 mV, Jsc = 38.9 mA/cm2 and Fill Factor, FF = 0.40.

Postdeposition Annealing Effect on Cu2ZnSnS4 Thin Films Grown at Different Substrate Temperature

Directory of Open Access Journals (Sweden)

Samia Ahmed Nadi

2014-01-01

Full Text Available Cu2ZnSnS4 (CZTS thin films were deposited on top of Molybdenum (Mo coated soda lime glass (SLG substrates using a single target rf magnetron sputtering technique. The sputtering parameters such as base pressure, working pressure, rf power, argon (Ar gas flow rate, and deposition time were kept consistent throughout the experiment. The effect of different substrate temperatures, for example, room temperature (RT, 300°C, 350°C, 370°C, 400°C, and 450°C, was analyzed by studying their structural, electrical, and optical properties. As-sputtered films were then annealed at 460°C. X-ray diffraction (XRD measurement revealed the structure to be kesterite with peak of (112 plane in both annealed and as-sputtered CZTS thin films. The crystallinity of the films improved with the increasing substrate temperature until 370°C. Secondary phases of MoS2, CuxMoSx, CuxSnSx, CuxS, and Cu6MoSnS8 (hemusite were also observed in the annealed CZTS films. Scanning electron microscopy (SEM shows crystallite size of deposited CZTS thin film to be proportionally related to deposition temperature. The highest surface roughness of 67.318 nm is observed by atomic force microscopy (AFM. The conductivity type of the films was found to be p-type by Hall effect measurement system.

Colloidal CuInSe2 nanocrystals thin films of low surface roughness

International Nuclear Information System (INIS)

Kergommeaux, Antoine de; Fiore, Angela; Faure-Vincent, Jérôme; Pron, Adam; Reiss, Peter

2013-01-01

Thin-film processing of colloidal semiconductor nanocrystals (NCs) is a prerequisite for their use in (opto-)electronic devices. The commonly used spin-coating is highly materials consuming as the overwhelming amount of deposited matter is ejected from the substrate during the spinning process. Also, the well-known dip-coating and drop-casting procedures present disadvantages in terms of the surface roughness and control of the film thickness. We show that the doctor blade technique is an efficient method for preparing nanocrystal films of controlled thickness and low surface roughness. In particular, by optimizing the deposition conditions, smooth and pinhole-free films of 11 nm CuInSe 2 NCs have been obtained exhibiting a surface roughness of 13 nm root mean square (rms) for a 350 nm thick film, and less than 4 nm rms for a 75 nm thick film. (paper)

CuPc/C60 heterojunction thin film optoelectronic devices

International Nuclear Information System (INIS)

Murtaza, Imran; Karimov, Khasan S.; Qazi, Ibrahim

2010-01-01

The optoelectronic properties of heterojunction thin film devices with ITO/CuPc/C 60 /Al structure have been investigated by analyzing their current-voltage characteristics, optical absorption and photocurrent. In this organic photovoltaic device, CuPc acts as an optically active layer, C 60 as an electron-transporting layer and ITO and Al as electrodes. It is observed that, under illumination, excitons are formed, which subsequently drift towards the interface with C 60 , where an internal electric field is present. The excitons that reach the interface are subsequently dissociated into free charge carriers due to the electric field present at the interface. The experimental results show that in this device the total current density is a function of injected carriers at the electrode-organic semiconductor surface, the leakage current through the organic layer and collected photogenerated current that results from the effective dissociation of excitons. (semiconductor devices)

Crystallization and electrical resistivity of Cu{sub 2}O and CuO obtained by thermal oxidation of Cu thin films on SiO{sub 2}/Si substrates

Energy Technology Data Exchange (ETDEWEB)

De Los Santos Valladares, L., E-mail: ld301@cam.ac.uk [Cavendish Laboratory, University of Cambridge, J.J Thomson Av., Cambridge CB3 0HE (United Kingdom); Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8503 (Japan); Departamento de Fisica, Universidade Federal de Pernambuco, 50670-901, Recife-Pe (Brazil); Salinas, D. Hurtado [Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8503 (Japan); Laboratorio de Ceramicos y Nanomateriales, Facultad de Ciencias Fisicas, Universidad Nacional Mayor de San Marcos, Ap. Postal 14-0149, Lima (Peru); Dominguez, A. Bustamante [Laboratorio de Ceramicos y Nanomateriales, Facultad de Ciencias Fisicas, Universidad Nacional Mayor de San Marcos, Ap. Postal 14-0149, Lima (Peru); Najarro, D. Acosta [Instituto de Fisica, Departamento de Materia Condensada, Universidad Nacional Autonoma de Mexico, Ap. Postal 20-364, CP 01000 (Mexico); Khondaker, S.I. [NanoScience Technology Centre and Department of Physics, University of Central Florida, Orlando, FL 32826 (United States); Mitrelias, T.; Barnes, C.H.W. [Cavendish Laboratory, University of Cambridge, J.J Thomson Av., Cambridge CB3 0HE (United Kingdom); Aguiar, J. Albino [Departamento de Fisica, Universidade Federal de Pernambuco, 50670-901, Recife-Pe (Brazil); Majima, Y. [Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8503 (Japan); CREST, Japan Science and Technology Agency (JST), 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8503 (Japan)

2012-08-01

In this work, we study the crystallization and electrical resistivity of the formed oxides in a Cu/SiO{sub 2}/Si thin film after thermal oxidation by ex-situ annealing at different temperatures up to 1000 Degree-Sign C. Upon increasing the annealing temperature, from the X ray diffractogram the phase evolution Cu {yields} Cu + Cu{sub 2}O {yields} Cu{sub 2}O {yields} Cu{sub 2}O + CuO {yields} CuO was detected. Pure Cu{sub 2}O films are obtained at 200 Degree-Sign C, whereas uniform CuO films without structural surface defects such as terraces, kinks, porosity or cracks are obtained in the temperature range 300-550 Degree-Sign C. In both oxides, crystallization improves with annealing temperature. A resistivity phase diagram, which is obtained from the current-voltage response, is presented here. The resistivity was expected to increase linearly as a function of the annealing temperature due to evolution of oxides. However, anomalous decreases are observed at different temperatures ranges, this may be related to the improvement of the crystallization and crystallite size when the temperature increases. - Highlights: Black-Right-Pointing-Pointer The crystallization and electrical resistivity of oxides in a Cu films are studied. Black-Right-Pointing-Pointer In annealing Cu films, the phase evolution Cu + Cu{sub 2}O {yields} Cu{sub 2}O {yields} Cu{sub 2}O + CuO {yields} CuO occurs. Black-Right-Pointing-Pointer A resistivity phase diagram, obtained from the current-voltage response, is presented. Black-Right-Pointing-Pointer Some decreases in the resistivity may be related to the crystallization.

Preparation of CuAlO2 Thin Films by Sol-Gel Method Using Nitrate Solution Dip-Coating

Directory of Open Access Journals (Sweden)

Ehara Takashi

2016-01-01

Full Text Available CuAlO2 thin films are prepared by sol-gel dip-coating followed by annealing in nitrogen atmosphere using copper nitrate and aluminum nitrate as metal source materials. X-ray diffraction (XRD patterns show (003, (006 and (009 oriented peaks of CuAlO2 at annealing temperature of 800 – 1000°C. This result indicates that the CuAlO2 films prepared in the present work are c-axis oriented. XRD peak intensity increase with annealing temperature and becomes maximum at 850°C. The CuAlO2 XRD peak decreased at annealing temperature of 900°C with appearance of a peak of CuO, and then increased again with annealing temperature until 1000 °C. The films have bandgap of 3.4 eV at annealing temperature of 850°C in which the transparency becomes the highest. At the annealing temperature of 850°C, scanning electron microscope (SEM observation reveals that the films are consist of amorphous fraction and microcrystalline CuAlO2 fraction.

Properties of CuS thin films treated in air plasma

International Nuclear Information System (INIS)

Rodriguez-Lazcano, Y.; Martinez, H.; Calixto-Rodriguez, M.; Nunez Rodriguez, A.

2009-01-01

Copper sulfide thin films were grown by chemical deposition and post treated in air plasma during 20 min. Air plasma was generated by alternating current discharge at a pressure of 4 x 10 2 Pa. The power discharge was maintained at an output of 220 V and a current of 0.2 A. Thermal annealing at 300 o C was performed for comparison. X-ray diffraction shows that plasma treatment results in phase transformation of Cu 39 S 28 (as grown) to CuS (treated by plasma). The copper lost is confirmed by X-ray fluorescence. No significant change in the optical band gap was observed due to plasma action. In addition, the electrical conductivity increases in one order of magnitude. On the other hand, the samples under plasma condition show a parallel growth to the substrate and an increase in the surface uniformity. The plasma etching removes copper due to its affinity with oxygen to form CuO, as is corroborated by optical emission spectroscopy.

Role of oxygen in enhancing N-type conductivity of CuInS2 thin films

International Nuclear Information System (INIS)

Rabeh, M. Ben; Kanzari, M.; Rezig, B.

2007-01-01

Post-growth treatments in air atmosphere were performed on CuInS 2 films prepared by the single-source thermal evaporation method. Their effect on the structural, optical and electrical properties of the films was studied by means of X-ray diffraction (XRD), scanning electron microscopy (SEM), optical reflection and transmission and resistance measurements. The films were annealed from 100 to 350 deg. C in air. The stability of the observed N-type conductivity after annealing depends strongly on the annealing temperature. Indeed it is shown that for annealing temperatures above 200 deg. C the N-type conductivity is stable. The resistance of the N-CuInS 2 thin films correlates well with the corresponding annealing temperature. The samples after annealing have direct bandgap energies of 1.45-1.50 eV

DC Magnetron sputtering of Y-Ba-Cu-O thin films

International Nuclear Information System (INIS)

Larsson, Gunnar.

1990-01-01

I have been studying dc magnetron sputtering of thin film YBa 2 Cu 3 O 6+x , one of the recently discovered high- temperatures superconductors. In the introduction a brief review of the subjects sputtering and superconductivity is given. Since partial pressure measurements, especially for oxygen, have been important in the work I include a short description of the operating principles of mass spectroscopy. Experimental results in addition to what is given in the papers concerning plasma are presented in an appendix at the end of the introduction. (au)

Effect of Cu addition on coercivity and interfacial state of Nd-Fe-B/Nd-rich thin films

International Nuclear Information System (INIS)

Matsuura, M; Sugimoto, S; Fukada, T; Tezuka, N; Goto, R

2010-01-01

This study provides the effect of Cu addition on coercivity (H cJ ) and interfacial microstructure in Nd-Fe-B/Nd-rich thin films. All films were deposited by using ultra high vacuum (UHV) magnetron sputtering, and the Nd-Fe-B layer was oxidized under several atmospheres with different oxygen content. Then, the films were annealed at 250-550 0 C under UHV. The films oxidized in low vacuum (10 -2 -10 -5 Pa) (under low oxygen state) exhibited the recovery of H cJ by the annealing at 450 0 C. On the contrary, the H cJ of the films oxidized in Ar (under high oxygen state) decreased with increasing annealing temperature. However, the H cJ increased drastically at the temperatures above 550 0 C. In addition, the Cu added films, which were annealed at temperatures above 350 0 C, showed higher coercivities than the films without Cu addition. The XRD analysis suggested the existence of C-Nd 2 O 3 phase in the Cu added films annealed at 550 0 C. It can be considered that the Cu addition decreases the eutectic temperature of Nd-rich phase and influences the interfacial state between Nd 2 Fe 14 B and Nd-rich phase.

Influence of substrate temperature and post annealing of CuGaO2 thin films on optical and structural properties

International Nuclear Information System (INIS)

Bakar, Muhammad Hafiz Abu; Li, Lam Mui; Salleh, Saafie; Alias, Afishah; Mohamad, Khairul Anuar; Sulaiman, Salina

2015-01-01

A transparent p-type thin film CuGaO 2 was deposited by using RF sputtering deposition method on plastic (PET) and glass substrate. The characteristics of the film is investigated. The thin film was deposited at temperature range from 50-250°C and the pressure inside the chamber is 1.0×10 −2 Torr and Argon gas was used as a working gas. The RF power is set to 100 W. The thickness of thin film is 300nm. In this experiment the transparency of the thin film is more than 70% for the visible light region. The band gap obtain is between 3.3 to 3.5 eV. The details of the results will be discussed in the conference

Preparation of thin films, with base to precursor materials of type Cu-In-Se elaborated by electrodeposition for the solar cells elaboration

International Nuclear Information System (INIS)

Fernandez, A.M.

1999-01-01

Thin films of chalcogenide compounds are promising because they have excellent optoelectronic characteristics to be applied in solar cells. In particular, CuInSe 2 and Cd Te thin films have shown high solar to electrical conversion efficiency. However, this efficiency is limited by the method of preparation, in this case, physical vapor deposition techniques are used. In order to increase the area of deposition t is necessary to use chemical methods, for example, electrodeposition technique. In this paper, the preparation of Cu-In-Se precursors thin films by electrochemical method is reported. These precursors were used to build solar cells with 7.9 % of efficiency. (Author)

Effect of sulfurization temperature on the property of Cu2ZnSnS4 thin film by eco-friendly nanoparticle ink method

Science.gov (United States)

Wang, Wei; Shen, Honglie; Yao, Hanyu; Shang, Huirong; Tang, ZhengXia; Li, Yufang

2017-09-01

Cu2ZnSnS4 (CZTS) thin films were fabricated by a low-cost nanoparticle ink method. The eco-friendly hydrophilic CZTS nanoparticles were mixed with low-cost n-propanol to form nanoparticle ink. To improve crystallinity and remove oxygen element, the CZTS thin films were sulfurized further. The effects of sulfurization temperature on the structure, morphologies, and photovoltaic performances of CZTS thin films were investigated. The results showed that the crystallinity of CZTS thin film was improved with increasing sulfurization temperature. The surface morphology studies demonstrated the formation of compact and homogenous CZTS thin film at a sulfurization temperature of 600 °C. By optimizing thickness of CZTS thin film, the CZTS thin-film solar cell with an optimal efficiency of 2.1% was obtained.

Influence of deposition parameters and annealing on Cu{sub 2}ZnSnS{sub 4} thin films grown by SILAR

Energy Technology Data Exchange (ETDEWEB)

Patel, Kinjal; Shah, Dimple V. [Department of Applied Physics, S.V. National Institute of Technology, Surat 395007 (India); Kheraj, Vipul, E-mail: vipulkheraj@gmail.com [Department of Applied Physics, S.V. National Institute of Technology, Surat 395007 (India); Department of Electrical and Computer Engineering, University of Utah, Salt Lake City, UT 84112 (United States)

2015-02-15

Highlights: • Optimisation of Cu{sub 2}ZnSnS{sub 4} (CZTS) thin film deposition using SILAR method. • Study on effects of annealing at different temperature under two different ambients, viz. sulphur and tin sulphide. • Formation of CZTS thin films with good crystalline quality confirmed by XRD and Raman spectra. - Abstract: Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films were deposited on glass substrates using Successive Ionic Layer Adsorption and Reaction (SILAR) technique at the room-temperature. The deposition parameters such as concentration of precursors and number of cycles were optimised for the deposition of uniform CZTS thin films. Effects of annealing at different temperature under two different ambient, viz. sulphur and tin sulphide have also been investigated. The structural and optical properties of the films were studied using X-ray diffraction, scanning electron microscopy, Raman spectroscopy and UV-visible spectra in light with the deposition parameters and annealing conditions. It is observed that a good quality CZTS film can be obtained by SILAR at room temperature followed by annealing at 500 °C in presence of sulphur.

Ab initio thermodynamics for the growth of ultra-thin Cu film on a perfect Mg O(001) surface

Energy Technology Data Exchange (ETDEWEB)

Zhukovskii, Yuri F. [Institute for Solid State Physics, University of Latvia, Kengaraga str. 8, Riga LV-1063 (Latvia)]. E-mail: quantzh@latnet.lv; Fuks, David [Materials Engineering Department, Ben-Gurion University of the Negev, POB 653, Beer-Sheva IL-84105 (Israel); Kotomin, Eugene A. [Institute for Solid State Physics, University of Latvia, Kengaraga str. 8, Riga LV-1063 (Latvia); Dorfman, Simon [Department of Physics, Israel Institute of Technology-Technion, Haifa IL-32000 (Israel)

2005-12-15

Controlled growth of thin metallic films on oxide substrates is important for numerous micro-and nano electronic applications. Our ab initio study is devoted to the periodic slab simulations for a series of ordered 2a Cu superlattices on the regular Mg O(001) substrate. Submonolayer and monolayer substrate Cu coverages were calculated using the Daft-Gaga method, as implemented into the Crystal-98 code. The results of ab initio calculations have been combined with thermodynamic theory which allows US to predict the growth mode of ultra-thin metal films (spinodal decomposition vs. nucleation-and-growth regime) as a function of the metal coverage and the temperature, and to estimate the metal density in clusters. We show that 3a cluster formation becomes predominant already at low Cu coverages, in agreement with the experiment.

Ab initio thermodynamics for the growth of ultra-thin Cu film on a perfect Mg O(001) surface

International Nuclear Information System (INIS)

Zhukovskii, Yuri F.; Fuks, David; Kotomin, Eugene A.; Dorfman, Simon

2005-01-01

Controlled growth of thin metallic films on oxide substrates is important for numerous micro-and nano electronic applications. Our ab initio study is devoted to the periodic slab simulations for a series of ordered 2a Cu superlattices on the regular Mg O(001) substrate. Submonolayer and monolayer substrate Cu coverages were calculated using the Daft-Gaga method, as implemented into the Crystal-98 code. The results of ab initio calculations have been combined with thermodynamic theory which allows US to predict the growth mode of ultra-thin metal films (spinodal decomposition vs. nucleation-and-growth regime) as a function of the metal coverage and the temperature, and to estimate the metal density in clusters. We show that 3a cluster formation becomes predominant already at low Cu coverages, in agreement with the experiment

Superconducting Tl2Ba2CaCu2O8 thin films prepared by post-annealing in a flow-through multiple-zone furnace

International Nuclear Information System (INIS)

Pluym, T.C.; Muenchausen, R.E.; Arendt, P.N.

1994-01-01

Tl 2 Ba 2 CaCu 2 O 8 thin films were prepared for the first time by use of a multiple-zone flow-through thallination process. Thallous oxide was volatilized from condensed thallium oxide in a low temperature source zone and convectively transported to a higher temperature thallination zone in which initially amorphous Ba 2 CaCu 2 O 5 precursor films were located. By careful control of the source temperature, film temperature, flow rate, anneal time, and rates of heat up and cool down, smooth Tl 2 Ba 2 CaCu 2 O 8 thin films were prepared on (100) LaAlO 3 with the following properties: inductive T c of 107.6 K and 80% transition width of 1.3 K, transport J c at 75 K of 1.3 x 10 5 A/cm 2 , and R s at 10 GHz and 80 K of 1.3 mΩ. The scalability of the process to large area film processing was demonstrated by the preparation of Tl 2 Ba 2 CaCu 2 O 8 thin films on LaAlO 3 three-inch diameter wafers

Femtosecond optical detection of quasiparticle dynamics in high-Tc YBa2Cu3O7-δ superconducting thin films

International Nuclear Information System (INIS)

Han, S.G.; Vardeny, Z.V.; Wong, K.S.; Symko, O.G.; Koren, G.

1990-01-01

Femtosecond dynamics of photogenerated quasiparticles in YBa 2 Cu 3 O 7-δ superconducting thin films shows, at T≤T c , two main electronic processes: (i) quasiparticle avalanche production during hot-carrier thermalization, which takes about 300 fsec; (ii) recombination of quasiparticles to form Cooper pairs, which is completed within 5 psec. In contrastr, nonsuperconducting epitaxial films such as PrBa 2 Cu 2 O 7 and YBa 2 Cu 3 O 6 show regular picosecond electronic response

On the underlying micromechanisms in time-dependent anelasticity in Al-(1 wt%)Cu thin films

NARCIS (Netherlands)

Bergers, L.I.J.C.; Hoefnagels, J.P.M.; Geers, M.G.D.

2017-01-01

This paper reveals potential micro mechanisms underlying time-dependent anelasticity observed in Al-(1 wt%)Cu thin films. The analyzed deformation mechanisms involve dislocation motion and interaction with solute diffusion, grain boundaries and precipitates. In order to investigate the role of these

Effect of strain on the structural and optical properties of Cu-N co-doped ZnO thin films

International Nuclear Information System (INIS)

Zhao Yue; Zhou Mintao; Li Zhao; Lv Zhiyong; Liang Xiaoyan; Min Jiahua; Wang Linjun; Shi Weimin

2011-01-01

Polycrystalline ZnO thin films co-doped with Cu and N have been obtained by chemical bath deposition. Introduction of Cu and N causes the change of strained stress in ZnO films, which subsequently affects the structural and optical properties. The dependence of structural and optical properties of the ZnO films on lattice strained stress is investigated by XRD measurement, SEM, PL spectrum, optical reflection and Raman spectrum. The result of photoluminescence of Cu-N co-doped ZnO films indicates that the UV emission peaks shift slightly towards higher energy side with decrease in tensile strain and vise versa. The blue-shift of the absorption edge and up-shift of E2 (high) mode of the films can be observed in the optical reflection and Raman spectra. - Highlights: →Cu-N co-doped ZnO is first prepared by the wet chemical method. → Stress is produced by the introduction of Cu and N atoms. → Effect of stress on the structural and optical properties of ZnO film is investigated. → Cu concentration will be used to control the structural and optical properties.

Characterization of nano-powder grown ultra-thin film p-CuO/n-Si hetero-junctions by employing vapour-liquid-solid method for photovoltaic applications

Energy Technology Data Exchange (ETDEWEB)

Sultana, Jenifar; Das, Anindita [Centre for Research in Nanoscience and Nanotechnology (CRNN), Kolkata 700098 (India); Das, Avishek [Department of Electronic Science, University of Calcutta, Kolkata 700009 (India); Saha, Nayan Ranjan [Department of Polymer Science and Technology, University of Calcutta, Kolkata 700009 (India); Karmakar, Anupam [Department of Electronic Science, University of Calcutta, Kolkata 700009 (India); Chattopadhyay, Sanatan, E-mail: scelc@caluniv.ac.in [Department of Electronic Science, University of Calcutta, Kolkata 700009 (India)

2016-08-01

In this work, the CuO nano-powder has been synthesized by employing chemical bath deposition technique for its subsequent use to grow ultrathin film (20 nm) of p-CuO on n-Si substrate for the fabrication of p-CuO/n-Si hetero-junction diodes. The thin CuO film has been grown by employing vapour-liquid-solid method. The crystalline structure and chemical phase of the film are characterized by employing field-emission scanning electron microscopy and X-ray diffraction studies. Chemical stoichiometry of the film has been confirmed by using energy dispersive X-ray spectroscopy. The potential for photovoltaic applications of such films is investigated by measuring the junction current-voltage characteristics and by extracting the relevant parameters such as open circuit photo-generated voltage, short circuit current density, fill-factor and energy conversion efficiency. - Highlights: • Synthesis of CuO nano-powder by CBD method • Growth of ultra-thin film of CuO by employing VLS method for the first time • Physical and electrical characterization of such films for photovoltaic applications • Estimation of energy conversion efficiency of the p-CuO/n-Si p-n junction solar cell.

Study of the magnetic anisotropy in Ni/Cu and Ni/glass thin films

International Nuclear Information System (INIS)

Cherif, S.-M.; Layadi, A.; Ben Youssef, J.; Nacereddine, C.; Roussigne, Y.

2007-01-01

The magnetic properties of evaporated Ni/Cu and Ni/glass thin films have been investigated by means of the vibrating sample magnetometer (VSM), the Brillouin light scattering (BLS) and magnetic force microscopy (MFM). The Ni thickness, t, ranges from 31 to 165 nm. The second- and fourth-order magnetic anisotropy constants, K 1 and K 2 , have been included; for the Ni/Cu series, K 1 was found to decrease from 1.0x10 6 to 0.18x10 6 erg/cm 3 as t increases from 31 to 165 nm, while K 2 increased from 0.24x10 6 to 0.8x10 6 erg/cm 3 . Over all the thickness range, the magnetization easy axis is in plane. For thinner films, there is a good agreement between anisotropy constant values inferred from VSM and BLS. Stripe domains were observed for t≥165 nm in Ni/glass and t≥90 nm in Ni/Cu

Superconducting thin films of Bi-Sr-Ca-Cu-O by laser ablation

International Nuclear Information System (INIS)

Bedekar, M.M.

1992-01-01

The discovery of a new class of copper oxide superconductors has led to the development of three major systems that exhibit superconducting properties. The Bi-Sr-Ca-Cu-O superconductors offer intrinsic advantages due to the high T c , chemical inertness and tolerance for a range of compositions. However, thin film research on these materials has progressed more slowly than the other cuprate systems. This dissertation examines the film growth, by laser ablation, of the Bi-Sr-Ca-Cu-O superconductors and the effect of the deposition parameters such as the laser target interaction, substrate temperature, target to substrate distance, deposition and cooling pressure, target type and processing and the substrate type. CO 2 laser ablation was shown to give rise to a non-stoichiometric material transfer due to the low fluences and long pulse lengths. In situ superconducting thin films with T c(0) 's of 76 K could be deposited using the KrF laser at substrate temperatures of 5 degrees C to 20 degrees C below phases. Lower temperatures gave rise to a mixture of 2201 and glassy phases. An increase in the target to substrate distance led to a deterioration of the electrical and structural properties of the films due to a decrease in the energy for film formation. A maximum in T c(0) was observed at 450 mtorr as the deposition pressure was varied between 200 to 700 mtorr. Optimum oxygen incorporation could be achieved by cooling the films in high oxygen pressures and the best films were obtained with 700 torr cooling pressure. The oxygen deficiency of the hot pressed targets led to inferior properties compared to the conventionally sintered targets. The microwave surface resistance of the films measured at 35 GHz showed an onset at 80 K and dropped below that of copper at 30 K. The study of the laser ablation process in this system revealed the presence of a stoichiometric forward directed component and a diffuse evaporation component

Lattice positions of Sn in Cu2ZnSnS4 nanoparticles and thin films studied by synchrotron X-ray absorption near edge structure analysis

Science.gov (United States)

Zillner, E.; Paul, A.; Jutimoosik, J.; Chandarak, S.; Monnor, T.; Rujirawat, S.; Yimnirun, R.; Lin, X. Z.; Ennaoui, A.; Dittrich, Th.; Lux-Steiner, M.

2013-06-01

Lattice positions of Sn in kesterite Cu2ZnSnS4 and Cu2SnS3 nanoparticles and thin films were investigated by XANES (x-ray absorption near edge structure) analysis at the S K-edge. XANES spectra were analyzed by comparison with simulations taking into account anti-site defects and vacancies. Annealing of Cu2ZnSnS4 nanoparticle thin films led to a decrease of Sn at its native and defect sites. The results show that XANES analysis at the S K-edge is a sensitive tool for the investigation of defect sites, being critical in kesterite thin film solar cells.

Electrical and photovoltaic characteristics of CuInSe2 thin films processed by nontoxic Cu–In precursor solutions

International Nuclear Information System (INIS)

Choi, Ik Jin; Jang, Jin Woo; Lee, Seung Min; Yeon, Deuk Ho; Jo, Yeon Hwa; Lee, Myung Ho; Cho, Yong Soo; Yun, Jae Ho; Yoon, Kyung Hoon

2013-01-01

Nontoxic Cu–In solution-processed CuInSe 2 absorber thin films and resultant photovoltaic cells have been investigated. Acetate-based Cu–In precursors having different Cu/In ratios of 0.8–1.2 were deposited by spin-coating and then selenized in Se atmosphere up to 550 °C. Single tetragonal CuInSe 2 phase was dominantly obtained regardless of Cu/In ratios, with the segregation of Cu 2−x Se secondary phase only in the case of Cu-rich films as evidenced by Raman spectra. The films with the 1.1 ratio demonstrated a larger grain size of ∼1.06 µm with an increased carrier concentration of ∼1.7 × 10 18 cm −3 and a decreased band gap of ∼1.02 eV, compared to the values obtained for Cu-deficient absorber films. The resultant best cell efficiency was ∼3.1% for the absorber having the 1.1 ratio, suggesting a potential of this simple spin-coating method as an alternative to typical vacuum processes. (paper)

Structural and optical properties of Cu2ZnSnS4 thin film absorbers from ZnS and Cu3SnS4 nanoparticle precursors

International Nuclear Information System (INIS)

Lin, Xianzhong; Kavalakkatt, Jaison; Kornhuber, Kai; Levcenko, Sergiu; Lux-Steiner, Martha Ch.; Ennaoui, Ahmed

2013-01-01

Cu 2 ZnSnS 4 (CZTS) has been considered as an alternative absorber layer to Cu(In,Ga)Se 2 due to its earth abundant and environmentally friendly constituents, optimal direct band gap of 1.4–1.6 eV and high absorption coefficient in the visible range. In this work, we propose a solution-based chemical route for the preparation of CZTS thin film absorbers by spin coating of the precursor inks composed of Cu 3 SnS 4 and ZnS NPs and annealing in Ar/H 2 S atmosphere. X-ray diffraction and Raman spectroscopy were used to characterize the structural properties. The chemical composition was determined by energy dispersive X-ray spectroscopy. Optical properties of the CZTS thin film absorbers were studied by transmission, reflection and photoluminescence spectroscopy

Enhanced electrical properties of pulsed laser-deposited CuIn{sub 0.7}Ga{sub 0.3}Se{sub 2} thin films via processing control

Energy Technology Data Exchange (ETDEWEB)

Jo, Yeon Hwa; Mohanty, Bhaskar Chandra; Cho, Yong Soo [Department of Materials Science and Engineering, Yonsei University, Seoul (Korea, Republic of)

2010-12-15

Polycrystalline CuIn{sub 0.7}Ga{sub 0.3}Se{sub 2} thin films were prepared on soda-lime glass substrates using pulsed laser deposition (PLD) with various process parameters such as laser energy, repetition rate and substrate temperature. It was confirmed that there existed a limited laser energy, i.e. less than 300 mJ, to get phase pure CIGS thin films at room temperature. Particularly, even at room temperature, distinct crystalline CIGS phase was observed in the films. Crystallinity of the films improved with increasing substrate temperature as evidenced by the decrease of FWHM from 0.65 degto 0.54 deg. Slightly Cu-rich surface with Cu{sub 2-x}Se phase was confirmed to exist by Raman spectra, depending on substrate temperature. Improved electrical properties, i.e., carrier concentration of {proportional_to}10{sup 18} cm{sup -3} and resistivity of 10{sup -1}{omega} cm at higher substrate temperature for the optimal CIGS films are assumed to be induced by the potential contributions from highly crystallized thin films, existence of Cu{sub 2-x}Se phase and diffusion of Na from substrates to films. (author)

Effect of Heat and Laser Treatment on Cu2S Thin Film Sprayed on Polyimide Substrate

Science.gov (United States)

Magdy, Wafaa; Mahmoud, Fawzy A.; Nassar, Amira H.

2018-02-01

Three samples of copper sulfide Cu2S thin film were deposited on polyimide substrate by spray pyrolysis using deposition temperature of 400°C and deposition time of about 45 min. One of the samples was left as deposited, another was heat treated, while the third was laser treated. The structural, surface morphological, optical, mechanical, and electrical properties of the films were investigated. X-ray diffraction (XRD) analysis showed that the copper sulfide films were close to copper-rich phase (Cu2S). Increased crystallite size after heat and laser treatment was confirmed by XRD analysis and scanning electron microscopy. Vickers hardness measurements showed that the samples' hardness values were enhanced with increasing crystallite size, representing an inverse Hall-Petch (H-P) effect. The calculated optical bandgap of the treated films was lower than that of the deposited film. Finally, it was found that both heat and laser treatment enhanced the physical properties of the sprayed Cu2S films on polyimide substrate for use in solar energy applications.

Crystalline nanostructured Cu doped ZnO thin films grown at room temperature by pulsed laser deposition technique and their characterization

Energy Technology Data Exchange (ETDEWEB)

Drmosh, Qasem A. [Department of Mechanical Engineering, King Fahd University of Petroleum and Minerals, Dhahran 31261 (Saudi Arabia); Rao, Saleem G.; Yamani, Zain H. [Laser Research Group, Department of Physics, Center of Excellence in Nanotechnology, King Fahd University of Petroleum and Minerals, Dhahran 31261 (Saudi Arabia); Gondal, Mohammed A., E-mail: magondal@kfupm.edu.sa [Laser Research Group, Department of Physics, Center of Excellence in Nanotechnology, King Fahd University of Petroleum and Minerals, Dhahran 31261 (Saudi Arabia)

2013-04-01

We report structural and optical properties of Cu doped ZnO (ZnO:Cu) thin films deposited on glass substrate at room temperature by pulsed laser deposition (PLD) method without pre and post annealing contrary to all previous reports. For preparation of (ZnO:Cu) composites pure Zn and Cu targets in special geometrical arrangements were exposed to 248 nm radiations generated by KrF exciter laser. The laser energy was 200 mJ with 10 Hz frequency and 20 ns pulse width. The effect of Cu concentration on crystal structure, morphology, and optical properties were investigated by XRD, FESEM and photoluminescence spectrometer respectively. A systematic shift in ZnO (0 0 2) peak with Cu concentration observed in XRD spectra demonstrated that Cu ion has been incorporated in ZnO lattice. Uniform film with narrow size range grains were observed in FESEM images. The photoluminescence (PL) spectra measured at room temperature revealed a systematic red shift in ZnO emission peak and decrease in the band gap with the increase in Cu concentration. These results entail that PLD technique can be realized to deposit high quality crystalline ZnO and ZnO:Cu thin films without pre and post heat treatment which is normally practiced worldwide for such structures.

PANI-Ag-Cu Nanocomposite Thin Films Based Impedimetric Microbial Sensor for Detection of E. coli Bacteria

Directory of Open Access Journals (Sweden)

Huda Abdullah

2014-01-01

Full Text Available PANI-Ag-Cu nanocomposite thin films were prepared by sol-gel method and deposited on the glass substrate using spin coating technique. Polyaniline was synthesized by chemical oxidative polymerization of aniline monomer in the presence of nitric acid. The films were characterized using XRD, FTIR, and UV-Visible spectroscopy. The performance of the sensor was conducted using electrochemical impedance spectroscopy to obtain the change in impedance of the sensor film before and after incubation with E. coli bacteria in water. The peaks in XRD pattern confirm the presence of Ag and Cu nanoparticles in face-centered cubic structure. FTIR analysis shows the stretching of N–H in the polyaniline structure. The absorption band from UV-Visible spectroscopy shows high peaks between 400 nm and 500 nm which indicate the presence of Ag and Cu nanoparticles, respectively. Impedance analysis indicates that the change in impedance of the films decreases with the presence of E. coli. The sensitivity on E. coli increases for the sample with high concentration of Cu.

Investigation of Au9+ swift heavy ion irradiation on CdS/CuInSe2 thin films

International Nuclear Information System (INIS)

Joshi, Rajesh A.; Taur, Vidya S.; Singh, Fouran; Sharma, Ramphal

2013-01-01

In the present manuscript we report about the preparation of CdS/CuInSe 2 heterojunction thin films by chemical ion exchange method and investigation of 120 MeV Au 9+ swift heavy ions (SHI) irradiation effect on its physicochemical as well as optoelectronic properties. These pristine (as grown) samples are irradiated with 120 MeV Au 9+ SHI of 5×10 11 and 5×10 12 ions/cm 2 fluencies and later on characterized for structural, compositional, morphological, optical and I–V characteristics. X-ray diffraction (XRD) pattern obtained from pristine and irradiated films shows considerable modifications in peak intensity as well as rising of some new peaks, corresponding to In 2 Se 3 , Cu 3 Se 2 and CuIn 2 Se 3 materials. Transmission electron microscope (TEM) images show decrease in grain size upon increase in irradiation ion fluencies, which is also supported from the observation of random and uneven distribution of nano-grains as confirmed through scanning electron microscope (SEM) images. Presence of Cd, Cu, In, S and Se in energy dispersive X-ray spectrum analysis (EDAX) confirms the expected and observed elemental composition in thin films, the absorbance peaks are related to band to band transitions and spin orbit splitting while energy band gap is observed to increase from 1.36 for pristine to 1.53 eV for SHI irradiated thin films and I–V characteristics under illumination to 100 mW/cm 2 light source shows enhancement in conversion efficiency from 0.26 to 1.59% upon irradiation. - Highlights: • Nanostructured CdS/CuInSe 2 can be grown by chemical ion exchange method. • Physicochemical and optoelectronic properties can be modified by 120 MeV Au 9+ SHI Irradiation. • Solar energy conversion efficiency improved from 0.26 to 1.59% in CdS/CuInSe 2 upon irradiation

Polymer thin film as coating layer to prevent corrosion of metal/metal oxide film

Science.gov (United States)

Sarkar, Suman; Kundu, Sarathi

2018-04-01

Thin film of polymer is used as coating layer and the corrosion of metal/metal oxide layer is studied with the variation of the thickness of the coating layer. The thin layer of polystyrene is fabricated using spin coating method on copper oxide (CuO) film which is deposited on glass substrate using DC magnetron sputtering technique. Thickness of the polystyrene and the CuO layers are determined using X-ray reflectivity (XRR) technique. CuO thin films coated with the polystyrene layer are exposed to acetic acid (2.5 v/v% aqueous CH3COOH solution) environments and are subsequently analyzed using UV-Vis spectroscopy and atomic force microscopy (AFM). Surface morphology of the film before and after interaction with the acidic environment is determined using AFM. Results obtained from the XRR and UV-Vis spectroscopy confirm that the thin film of polystyrene acts as an anticorrosion coating layer and the strength of the coating depends upon the polymer layer thickness at a constant acid concentration.

Josephson effectss in bicrystalline Bi2Sr2CaCu2O8+δ thin films

International Nuclear Information System (INIS)

Amrein, T.

1994-08-01

A pulsed laser deposition process is developed for preparing high quality thin films of Bi 2 Sr 2 CaCu 2 O x on different substrates. Both microstructural and electrical properties of the superconducting films are well characterized, e.g. by SEM, TEM and AFM. The high reproducability of the thin film quality facilitated a detailed study of Josephson effects in bicrystalline grain boundary junctions (GBJs). Thin films are deposited on commercially available (001) SrTiO 3 bicrystalls and patterned by standard photolithography using wet-etching or Ar + -ion milling. The width of the micobridges ranges from 2 to 111 μm. The critical current densities across grain boundaries of thin film bicrystals have been measured as a function of the tilt angle Θ. For Θ=0 to 45 , the ratio of the grain boundary critical current density to the bulk critical current density decreases exponentially with increasing tilt angle. Microstructure investigations show a rough grain boundary of the superconductor (roughness 100 nm-1 μm) which is not determined by the roughness of the substrate grain boundary (1-3 nm) but by the island-plus-layer growth of the twin domains. The electrical properties are well described by the resistively shunted junction (RSJ) model. The I c R n -product reaches values of 2.2 mV at 4.2 K and 60 μV at 77 K. An optimized design for dc SQUIDs (Θ=24 ) is developed relating to the results of single GBJs. The values of the transfer function (∂V/∂Φ) run up to 74 μV/Φ o . The equivalent flux noise which is measured in a flux-locked loop mode amounts 4.5 to 25 μPhi o Hz in the white noise region for Φ≥25-50 Hz and 13 to 150 μΦ o Hz at 1 Hz. In conclusion, microstructural as well as electrical properties of bicrystalline Bi 2 Sr 2 CaCu 2 O x and YBa 2 Cu 3 O y GBJs are more or less equal. (orig.)

Native oxidation of ultra high purity Cu bulk and thin films

International Nuclear Information System (INIS)

Iijima, J.; Lim, J.-W.; Hong, S.-H.; Suzuki, S.; Mimura, K.; Isshiki, M.

2006-01-01

The effect of microstructure and purity on the native oxidation of Cu was studied by using angle-resolved X-ray photoelectron spectroscopy (AR-XPS) and spectroscopic ellipsometry (SE). A high quality copper film prepared by ion beam deposition under a substrate bias voltage of -50 V (IBD Cu film at V s = -50 V) showed an oxidation resistance as high as an ultra high purity copper (UHP Cu) bulk, whereas a Cu film deposited without substrate bias voltage (IBD Cu film at V s = 0 V) showed lower oxidation resistance. The growth of Cu 2 O layer on the UHP Cu bulk and both types of the films obeyed in principle a logarithmic rate law. However, the growth of oxide layer on the IBD Cu films at V s = 0 and -50 V deviated upward from the logarithmic rate law after the exposure time of 320 and 800 h, respectively. The deviation from the logarithmic law is due to the formation of CuO on the Cu 2 O layer after a critical time

Effects of deposition period on the chemical bath deposited Cu4SnS4 thin films

International Nuclear Information System (INIS)

Kassim, Anuar; Wee Tee, Tan; Soon Min, Ho.; Nagalingam, Saravanan

2010-01-01

Cu 4 SnS 4 thin films were prepared by simple chemical bath deposition technique. The influence of deposition period on the structural, morphological and optical properties of films was studied. The films were characterized using X-ray diffraction, atomic force microscopy and UV-Vis Spectrophotometer. X-ray diffraction patterns indicated that the films were polycrystalline with prominent peak attributed to (221) plane of orthorhombic crystal structure. The films prepared at 80 min showed significant increased in the intensity of all diffractions. According to AFM images, these films indicated that the surface of substrate was covered completely. The obtained films also produced higher absorption characteristics when compared to the films prepared at other deposition periods based on optical absorption studies. The band gap values of films deposited at different deposition periods were in the range of 1.6-2.1 eV. Deposition for 80 min was found to be the optimum condition to produce good quality thin films under the current conditions. (author).

Effect of preparation conditions on the properties of Cu3BiS3 thin films grown by a two - step process

Science.gov (United States)

Mesa, F.; Gordillo, G.

2009-05-01

Cu3BiS3 thin films were prepared on soda-lime glass substrates by co-evaporation of the precursors in a two-step process; for that, the metallic precursors were evaporated from a tungsten boat in presence of elemental sulfur evaporated from a tantalum effusion cell. The films were characterized by spectral transmittance, atomic force microscopy AFM and x-ray diffraction (XRD) measurements to investigate the effect of the growth conditions on the optical, morphological and structural properties. The results revealed that, independently of the deposition conditions, the films grow only in the orthorhombic Cu3BiS3 phase. It was also found that the Cu3BiS3 films present p-type conductivity, a high absorption coefficient (greater than 104 cm-1) and an energy band gap Eg of about 1.41 eV, indicating that this compound has good properties to perform as absorbent layer in thin film solar cells.

Comparative study of the mechanical properties of nanostructured thin films on stretchable substrates

Energy Technology Data Exchange (ETDEWEB)

Djaziri, S. [Max-Planck-Institut für Eisenforschung GmbH, Max-Planck-Straße 1, 40237 Düsseldorf (Germany); Institut P' (UPR 3346 CNRS), Université de Poitiers, ENSMA, Bd Pierre et Marie Curie, 86962 Futuroscope Cedex (France); Renault, P.-O.; Le Bourhis, E.; Goudeau, Ph., E-mail: Philippe.goudeau@univ-poitiers.fr [Institut P' (UPR 3346 CNRS), Université de Poitiers, ENSMA, Bd Pierre et Marie Curie, 86962 Futuroscope Cedex (France); Faurie, D. [LSPM, (UPR 3407 CNRS), Université Paris 13, Institut Galilée, 99 avenue Jean-Baptiste Clément, 93430 Villetaneuse (France); Geandier, G. [Institut Jean Lamour (UMR 3079 CNRS), Université de Lorraine, Parc de Saurupt, CS 50840, 54011 NANCY Cedex (France); Mocuta, C.; Thiaudière, D. [Synchrotron SOLEIL, L' Orme des Merisiers, Saint-Aubin, BP 48, 91192 Gif-sur-Yvette Cedex (France)

2014-09-07

Comparative studies of the mechanical behavior between copper, tungsten, and W/Cu nanocomposite based on copper dispersoïd thin films were performed under in-situ controlled tensile equi-biaxial loadings using both synchrotron X-ray diffraction and digital image correlation techniques. The films first deform elastically with the lattice strain equal to the true strain given by digital image correlation measurements. The Cu single thin film intrinsic elastic limit of 0.27% is determined below the apparent elastic limit of W and W/Cu nanocomposite thin films, 0.30% and 0.49%, respectively. This difference is found to be driven by the existence of as-deposited residual stresses. Above the elastic limit on the lattice strain-true strain curves, we discriminate two different behaviors presumably footprints of plasticity and fracture. The Cu thin film shows a large transition domain (0.60% true strain range) to a plateau with a smooth evolution of the curve which is associated to peak broadening. In contrast, W and W/Cu nanocomposite thin films show a less smooth and reduced transition domain (0.30% true strain range) to a plateau with no peak broadening. These observations indicate that copper thin film shows some ductility while tungsten/copper nanocomposites thin films are brittle. Fracture resistance of W/Cu nanocomposite thin film is improved thanks to the high compressive residual stress and the elimination of the metastable β-W phase.

Complementary Characterization of Cu(In,Ga)Se₂ Thin-Film Photovoltaic Cells Using Secondary Ion Mass Spectrometry, Auger Electron Spectroscopy, and Atom Probe Tomography.

Science.gov (United States)

Jang, Yun Jung; Lee, Jihye; Jeong, Jeung-Hyun; Lee, Kang-Bong; Kim, Donghwan; Lee, Yeonhee

2018-05-01

To enhance the conversion performance of solar cells, a quantitative and depth-resolved elemental analysis of photovoltaic thin films is required. In this study, we determined the average concentration of the major elements (Cu, In, Ga, and Se) in fabricated Cu(In,Ga)Se2 (CIGS) thin films, using inductively coupled plasma atomic emission spectroscopy, X-ray fluorescence, and wavelengthdispersive electron probe microanalysis. Depth profiling results for CIGS thin films with different cell efficiencies were obtained using secondary ion mass spectrometry and Auger electron spectroscopy to compare the atomic concentrations. Atom probe tomography, a characterization technique with sub-nanometer resolution, was used to obtain three-dimensional elemental mapping and the compositional distribution at the grain boundaries (GBs). GBs are identified by Na increment accompanied by Cu depletion and In enrichment. Segregation of Na atoms along the GB had a beneficial effect on cell performance. Comparative analyses of different CIGS absorber layers using various analytical techniques provide us with understanding of the compositional distributions and structures of high efficiency CIGS thin films in solar cells.

Nanoscale observation of surface potential and carrier transport in Cu2ZnSn(S,Se)4 thin films grown by sputtering-based two-step process.

Science.gov (United States)

Kim, Gee Yeong; Kim, Ju Ri; Jo, William; Son, Dae-Ho; Kim, Dae-Hwan; Kang, Jin-Kyu

2014-01-08

Stacked precursors of Cu-Zn-Sn-S were grown by radio frequency sputtering and annealed in a furnace with Se metals to form thin-film solar cell materials of Cu2ZnSn(S,Se)4 (CZTSSe). The samples have different absorber layer thickness of 1 to 2 μm and show conversion efficiencies up to 8.06%. Conductive atomic force microscopy and Kelvin probe force microscopy were used to explore the local electrical properties of the surface of CZTSSe thin films. The high-efficiency CZTSSe thin film exhibits significantly positive bending of surface potential around the grain boundaries. Dominant current paths along the grain boundaries are also observed. The surface electrical parameters of potential and current lead to potential solar cell applications using CZTSSe thin films, which may be an alternative choice of Cu(In,Ga)Se2.PACS number: 08.37.-d; 61.72.Mm; 71.35.-y.

High absorption coefficients of the CuSb(Se,Te2 and CuBi(S,Se2 alloys enable high-efficient 100 nm thin-film photovoltaics

Directory of Open Access Journals (Sweden)

Chen Rongzhen

2017-01-01

Full Text Available We demonstrate that the band-gap energies Eg of CuSb(Se,Te2 and CuBi(S,Se2 can be optimized for high energy conversion in very thin photovoltaic devices, and that the alloys then exhibit excellent optical properties, especially for tellurium rich CuSb(Se1−xTex2. This is explained by multi-valley band structure with flat energy dispersions, mainly due to the localized character of the Sb/Bi p-like conduction band states. Still the effective electron mass is reasonable small: mc ≈ 0.25m0 for CuSbTe2. The absorption coefficient α(ω for CuSb(Se1−xTex2 is at ħω = Eg + 1 eV as much as 5–7 times larger than α(ω for traditional thin-film absorber materials. Auger recombination does limit the efficiency if the carrier concentration becomes too high, and this effect needs to be suppressed. However with high absorptivity, the alloys can be utilized for extremely thin inorganic solar cells with the maximum efficiency ηmax ≈ 25% even for film thicknesses d ≈ 50 − 150 nm, and the efficiency increases to ∼30% if the Auger effect is diminished.

High absorption coefficients of the CuSb(Se,Te)2 and CuBi(S,Se)2 alloys enable high-efficient 100 nm thin-film photovoltaics

Science.gov (United States)

Chen, Rongzhen; Persson, Clas

2017-06-01

We demonstrate that the band-gap energies Eg of CuSb(Se,Te)2 and CuBi(S,Se)2 can be optimized for high energy conversion in very thin photovoltaic devices, and that the alloys then exhibit excellent optical properties, especially for tellurium rich CuSb(Se1-xTex)2. This is explained by multi-valley band structure with flat energy dispersions, mainly due to the localized character of the Sb/Bi p-like conduction band states. Still the effective electron mass is reasonable small: mc ≈ 0.25m0 for CuSbTe2. The absorption coefficient α(ω) for CuSb(Se1-xTex)2 is at ħω = Eg + 1 eV as much as 5-7 times larger than α(ω) for traditional thin-film absorber materials. Auger recombination does limit the efficiency if the carrier concentration becomes too high, and this effect needs to be suppressed. However with high absorptivity, the alloys can be utilized for extremely thin inorganic solar cells with the maximum efficiency ηmax ≈ 25% even for film thicknesses d ≈ 50 - 150 nm, and the efficiency increases to ˜30% if the Auger effect is diminished.

Heterojunction solar cell with 6% efficiency based on an n-type aluminum-gallium-oxide thin film and p-type sodium-doped Cu2O sheet

Science.gov (United States)

Minami, Tadatsugu; Nishi, Yuki; Miyata, Toshihiro

2015-02-01

In this paper, we describe efforts to enhance the efficiency of Cu2O-based heterojunction solar cells fabricated with an aluminum-gallium-oxide (Al-Ga-O) thin film as the n-type layer and a p-type sodium (Na)-doped Cu2O (Cu2O:Na) sheet prepared by thermally oxidizing copper sheets. The optimal Al content [X; Al/(Ga + Al) atomic ratio] of an AlX-Ga1-X-O thin-film n-type layer was found to be approximately 2.5 at. %. The optimized resistivity was approximately 15 Ω cm for n-type AlX-Ga1-X-O/p-type Cu2O:Na heterojunction solar cells. A MgF2/AZO/Al0.025-Ga0.975-O/Cu2O:Na heterojunction solar cell with 6.1% efficiency was fabricated using a 60-nm-thick n-type oxide thin-film layer and a 0.2-mm-thick Cu2O:Na sheet with the optimized resistivity.

Magnon dispersion in thin magnetic films

International Nuclear Information System (INIS)

Balashov, T; Wulfhekel, W; Buczek, P; Sandratskii, L; Ernst, A

2014-01-01

Although the dispersion of magnons has been measured in many bulk materials, few studies deal with the changes in the dispersion when the material is in the form of a thin film, a system that is of interest for applications. Here we review inelastic tunneling spectroscopy studies of magnon dispersion in Mn/Cu 3 Au(1 0 0) and present new studies on Co and Ni thin films on Cu(1 0 0). The dispersion in Mn and Co films closely follows the dispersion of bulk samples with negligible dependence on thickness. The lifetime of magnons depends slightly on film thickness, and decreases considerably as the magnon energy increases. In Ni/Cu(1 0 0) films the thickness dependence of dispersion is much more pronounced. The measurements indicate a considerable mode softening for thinner films. Magnon lifetimes decrease dramatically near the edge of the Brillouin zone due to a close proximity of the Stoner continuum. The experimental study is supported by first-principles calculations. (paper)

Magnon dispersion in thin magnetic films.

Science.gov (United States)

Balashov, T; Buczek, P; Sandratskii, L; Ernst, A; Wulfhekel, W

2014-10-01

Although the dispersion of magnons has been measured in many bulk materials, few studies deal with the changes in the dispersion when the material is in the form of a thin film, a system that is of interest for applications. Here we review inelastic tunneling spectroscopy studies of magnon dispersion in Mn/Cu3Au(1 0 0) and present new studies on Co and Ni thin films on Cu(1 0 0). The dispersion in Mn and Co films closely follows the dispersion of bulk samples with negligible dependence on thickness. The lifetime of magnons depends slightly on film thickness, and decreases considerably as the magnon energy increases. In Ni/Cu(1 0 0) films the thickness dependence of dispersion is much more pronounced. The measurements indicate a considerable mode softening for thinner films. Magnon lifetimes decrease dramatically near the edge of the Brillouin zone due to a close proximity of the Stoner continuum. The experimental study is supported by first-principles calculations.

Spray-coated ligand-free Cu2ZnSnS4 nanoparticle thin films

DEFF Research Database (Denmark)

Engberg, Sara Lena Josefin; Murthy, Swathi; Kofod, Guggi

We have fabricated Cu2ZnSnS4 (CZTS) thin films from spray-coating ligand-free nanoparticle inks. The as-synthesized CZTS nanoparticles were inherently ligand-free [1], which allows the use of polar solvents, such as water and ethanol. Another advantage of these particles is that user- and environ......We have fabricated Cu2ZnSnS4 (CZTS) thin films from spray-coating ligand-free nanoparticle inks. The as-synthesized CZTS nanoparticles were inherently ligand-free [1], which allows the use of polar solvents, such as water and ethanol. Another advantage of these particles is that user......- and environmentally-friendly alkali metal chloride salts can be directly dissolved in controllable amounts. The homogeneous distribution of alkali metals in the ink allows uniform grain growth within the deposited absorber layer as a result of liquid phase assisted sintering. We find that particularly beneficial...... as an unquantifiable amount of ZnS. A Sono-tek spray-coating system is used which utilizes ultrasonic atomization. We investigate the effect of different binders, ink concentration, and spray-coating conditions, i.e. spray power, flow rate from syringe pump, distance between spray nozzle and the substrate, and time...

Growth of Sr1-xNdxCuOy thin films by rf-magnetron sputtering and pulsed-laser deposition

International Nuclear Information System (INIS)

Sugii, N.; Ichikawa, M.; Kuba, K.; Sakurai, T.; Iamamoto, K.; Yamauchi, H.

1992-01-01

This paper reports on Sr 1- x Nd x CuO y thin films grown on SrTiO 3 substrates by rf-magnetron sputtering and pulsed-laser deposition. The sputter-deposited film with x=0 has an infinite-layer structure whose lattice constants are: a=0.390 nm and c=0.347 nm. When x is larger than 0.1, the films contain a phase of the Sr 14 Cu 24 O 41 structure. The laser-deposited films of Sr 1- x Nd x CuO y with x ≥ 0.075 were single phase of the infinite-layer structure. The lattice parameter c decreased and the lattice parameter a increased, as the Nd content, x, increased. The films with x=0.10 and 0.125 exhibited superconducting onset temperatures around 26 K. Weak Meissner signals were observed for these films at temperatures below 30 K

Highly enhanced photocurrent of novel quantum-dot-co-sensitized PbS-Hg/CdS/Cu:ZnO thin films for photoelectrochemical applications

International Nuclear Information System (INIS)

Gohel, Jignasa V.; Jana, A.K.; Singh, Mohit

2017-01-01

A novel quantum-dot-co-sensitized PbS-Hg/CdS/Cu:ZnO thin films synthesized by low-cost process. The properties of ZnO are also enhanced by doping and co-doping. It is also compared with quantum-dot co-sensitization. Optical properties, crystal structure, morphology, and photocurrent are characterized by UV-Vis spectroscopy, XRD, SEM, and solar simulator, respectively. The bandgap is interestingly reduced highly to 2.6 eV for Ag co-doped Cu:ZnO. It is unprecedentedly reduced to 2.1 eV and even 1.97 eV for CdS and PbS-Hg QD-sensitized thin films, respectively. An exceptionally enhanced photocurrent of 17.1 mA/cm"2 is achieved with PbS-Hg-co-sensitized CdS-sensitized Cu:ZnO thin film. This is an excellent achievement, which highly supports the potential of low-cost solar conversion. (orig.)

Highly enhanced photocurrent of novel quantum-dot-co-sensitized PbS-Hg/CdS/Cu:ZnO thin films for photoelectrochemical applications

Energy Technology Data Exchange (ETDEWEB)

Gohel, Jignasa V.; Jana, A.K.; Singh, Mohit [Sardar Vallabhbhai National Institute of Technology, Chemical Engineering Department, Surat, Gujarat (India)

2017-08-15

A novel quantum-dot-co-sensitized PbS-Hg/CdS/Cu:ZnO thin films synthesized by low-cost process. The properties of ZnO are also enhanced by doping and co-doping. It is also compared with quantum-dot co-sensitization. Optical properties, crystal structure, morphology, and photocurrent are characterized by UV-Vis spectroscopy, XRD, SEM, and solar simulator, respectively. The bandgap is interestingly reduced highly to 2.6 eV for Ag co-doped Cu:ZnO. It is unprecedentedly reduced to 2.1 eV and even 1.97 eV for CdS and PbS-Hg QD-sensitized thin films, respectively. An exceptionally enhanced photocurrent of 17.1 mA/cm{sup 2} is achieved with PbS-Hg-co-sensitized CdS-sensitized Cu:ZnO thin film. This is an excellent achievement, which highly supports the potential of low-cost solar conversion. (orig.)

Optical and electrical characterizations of nanoparticle Cu2S thin films

International Nuclear Information System (INIS)

Saadeldin, M.; Sawaby, K.; Soliman, H. S.; Ali, H. A. M.

2014-01-01

Copper sulfide thin films are deposited onto different substrates at room temperature using the thermal evaporation technique. X-ray diffraction spectra show that the film has an orthorhombicchalcocite (γ-Cu 2 S) phase. The atomic force microscopy images indicate that the film exhibits nanoparticles with an average size of nearly 44 nm. Specrtophotometric measurements for the transmittance and reflectance are carried out at normal incidence in a spectral wavelength range of 450 nm–2500 nm. The refractive index, n, as well as the absorption index, k is calculated. Some dispersion parameters are determined. The analyses of ε 1 and ε 2 reveal several absorption peaks. The analysis of the spectral behavior of the absorption coefficient, α, in the absorption region reveals direct and indirect allowed transitions. The dark electrical resistivity is studied as a function of film thickness and temperature. Tellier's model is adopted for determining the mean free path and bulk resistance. (condensed matter: structural, mechanical, and thermal properties)

Effect of alkali elements in thin-film Cu2ZnSnS4 solar cells produced by solution-processing

DEFF Research Database (Denmark)

Engberg, Sara Lena Josefin; Canulescu, Stela; Schou, Jørgen

The effect of adding Li, Na, and K to Cu2ZnSnS4 nanoparticle thin-film absorber layers has been investigated. Among them, K is found to enhance grain growth as well as increase the photoluminescence of the films....

Colloidal CuInSe2 nanocrystals thin films of low surface roughness

Science.gov (United States)

de Kergommeaux, Antoine; Fiore, Angela; Faure-Vincent, Jérôme; Pron, Adam; Reiss, Peter

2013-03-01

Thin-film processing of colloidal semiconductor nanocrystals (NCs) is a prerequisite for their use in (opto-)electronic devices. The commonly used spin-coating is highly materials consuming as the overwhelming amount of deposited matter is ejected from the substrate during the spinning process. Also, the well-known dip-coating and drop-casting procedures present disadvantages in terms of the surface roughness and control of the film thickness. We show that the doctor blade technique is an efficient method for preparing nanocrystal films of controlled thickness and low surface roughness. In particular, by optimizing the deposition conditions, smooth and pinhole-free films of 11 nm CuInSe2 NCs have been obtained exhibiting a surface roughness of 13 nm root mean square (rms) for a 350 nm thick film, and less than 4 nm rms for a 75 nm thick film. Invited talk at the 6th International Workshop on Advanced Materials Science and Nanotechnology, 30 October-2 November 2012, Ha Long, Vietnam.

Patterned YBa2Cu3O7-x thin films from photopolymerizable precursors

International Nuclear Information System (INIS)

Hung, Y.; Agostinelli, J.A.

1990-01-01

A technique which combines the fabrication and patterning of thin films of the high T c superconductor YBa 2 Cu 3 O 7-x has been developed. The technique possesses the essential features of the metalorganic decomposition method with the additional attribute that the metalorganic precursor is photopolymerizable. Patterns are generated directly in the precursor film using optical exposure through a mask followed by development in a solvent. A subsequent thermal treatment transforms the patterned precursor film to the oriented superconducting phase with c axis perpendicular to the substrate surface. Resistivity measurements for such a patterned film on a single crystal (100)MgO substrate show an onset to the superconducting state occurring at 85 K with zero resistivity below 67 K

Effects of Sb-doping on the grain growth of Cu(In, Ga)Se2 thin films fabricated by means of single-target sputtering

International Nuclear Information System (INIS)

Zhang, Shu; Wu, Lu; Yue, Ruoyu; Yan, Zongkai; Zhan, Haoran; Xiang, Yong

2013-01-01

To investigate the effects of Sb doping on the kinetics of grain growth in Cu(In,Ga)Se 2 (CIGS) thin films during annealing, CIGS thin films were sputtered onto Mo coated substrates from a single CIGS alloy target, followed by chemical bath deposition of Sb 2 S 3 thin layers on top of CIGS layers and subsequent annealing at different temperatures for 30 min in Se vapors. X-ray diffraction results showed that CIGS thin films were obtained directly using the single-target sputtering method. After annealing, the In/Ga ratio in Sb-doped CIGS thin films remained stable compared to undoped film, possibly because Sb can promote the incorporation of Ga into CIGS. The grain growth in CIGS thin films was enhanced after Sb doping, exhibiting significantly larger grains after annealing at 400 °C or 450 °C compared to films without Sb. In particular, the effect was strikingly significant in grain growth across the film thickness, resulting in columnar grain structure in Sb-doped films. This grain growth improvement may be led by the diffusion of Sb from the front surface to the CIGS-Mo back interface, which promoted the mass transport process in CIGS thin films. - Highlights: ► Cu(In,Ga)Se 2 (CIGS) thin films made by sputtering from a single CIGS target. ► Chemical bath deposition used to introduce antimony into CIGS absorber layers. ► In/Ga ratio decreases in Sb-doped annealed films, comparatively to undoped films. ► Sb-doped CIGS films are superior to undoped films in terms of grain-growth kinetics

Origin of perpendicular magnetic anisotropy of SmCo5 thin films with Cu underlayer

International Nuclear Information System (INIS)

Sayama, Junichi; Mizutani, Kazuki; Asahi, Toru; Ariake, Jun; Ouchi, Kazuhiro; Osaka, Tetsuya

2006-01-01

Effects of the Cu underlayer thickness and the addition of Cu to a Sm-Co layer on magnetic properties and microstructure of SmCo 5 thin films exhibiting perpendicular magnetic anisotropy were studied. The origin of the perpendicular magnetic anisotropy was discussed from these experimental results. A thick Cu underlayer of more than 100 nm brought about high perpendicular magnetic anisotropy leading to the squareness ratio equal to unity. The Cu addition enhanced the perpendicular magnetic anisotropy and reduced the Cu underlayer thickness required to obtain the squareness ratio of unity. X-ray diffractometry showed that the crystalline orientation of the Sm-Co layer did not correlate with that of the Cu underlayer. Auger electron spectroscopy revealed that Cu atoms were diffused up to the Sm-Co layer from the Cu underlayer. From the results, Cu atoms existing in the Sm-Co layer were suggested to be strongly related with an appearance of the perpendicular magnetic anisotropy by introducing the Cu underlayer

Highly coercive thin-film nanostructures

International Nuclear Information System (INIS)

Zhou, J.; Skomski, R.; Kashyap, A.; Sorge, K.D.; Sui, Y.; Daniil, M.; Gao, L.; Yan, M.L.; Liou, S.-H.; Kirby, R.D.; Sellmyer, D.J.

2005-01-01

The processing, structure, and magnetism of highly coercive Sm-Co and FePt thin-film nanostructures are investigated. The structures include 1:5 based Sm-Co-Cu-Ti magnets, particulate FePt:C thin films, and FePt nanotubes. As in other systems, the coercivity depends on texture and imperfections, but there are some additional features. A specific coercivity mechanism in particulate media is a discrete pinning mode intermediate between Stoner-Wohlfarth rotation and ordinary domain-wall pinning. This mechanism yields a coercivity maximum for intermediate intergranular exchange and explains the occurrence of coercivities of 5 T in particulate Sm-Co-Cu-Ti magnets

Effect of preparation conditions on the diffusion parameters of Cu/Ni thin films

Energy Technology Data Exchange (ETDEWEB)

Rammo, N.N.; Makadsi, M.N. [College of Science, Baghdad University, Baghdad (Iraq); Abdul-Lettif, A.M. [College of Science, Babylon University, Hilla (Iraq)

2004-11-01

Diffusion coefficients of vacuum-deposited Cu/Ni bilayer thin films were determined in the temperature range 200-500 C using X-ray photoelectron spectroscopy, sheet resistance measurements, and X-ray diffraction analysis. The difference between the results of the present work and those of previous relevant investigations may be attributed to the difference in the film microstructure, which is controlled by the preparation conditions. Therefore, the effects of deposition rate, substrate temperature, film thickness, and substrate structure on the diffusion parameters were separately investigated. It is shown that the diffusion activation energy (Q) decreases as deposition rate increases, whereas Q increases as substrate temperature and film thickness increase. The value of Q for films deposited on amorphous substrates is less than that for films deposited on single-crystal substrates. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Thin films of copper antimony sulfide: A photovoltaic absorber material

Energy Technology Data Exchange (ETDEWEB)

Ornelas-Acosta, R.E. [Universidad Autónoma de Nuevo León, Facultad de Ingeniería Mecánica y Eléctrica, San Nicolás de los Garza, Nuevo León 66450 (Mexico); Shaji, S. [Universidad Autónoma de Nuevo León, Facultad de Ingeniería Mecánica y Eléctrica, San Nicolás de los Garza, Nuevo León 66450 (Mexico); Universidad Autónoma de Nuevo León-CIIDIT, Apodaca, Nuevo León (Mexico); Avellaneda, D.; Castillo, G.A.; Das Roy, T.K. [Universidad Autónoma de Nuevo León, Facultad de Ingeniería Mecánica y Eléctrica, San Nicolás de los Garza, Nuevo León 66450 (Mexico); Krishnan, B., E-mail: kbindu_k@yahoo.com [Universidad Autónoma de Nuevo León, Facultad de Ingeniería Mecánica y Eléctrica, San Nicolás de los Garza, Nuevo León 66450 (Mexico); Universidad Autónoma de Nuevo León-CIIDIT, Apodaca, Nuevo León (Mexico)

2015-01-15

Highlights: • CuSbS{sub 2} thin films were prepared by heating Sb{sub 2}S{sub 3}/Cu layers. • Analyzed the structure, composition, optical, and electrical properties. • PV structures: glass/SnO{sub 2}:F/n-CdS/p-CuSbS{sub 2}/C/Ag were formed at different conditions. • The PV parameters (J{sub sc}, V{sub oc}, and FF) were evaluated from the J–V characteristics. • J{sub sc}: 0.52–3.20 mA/cm{sup 2}, V{sub oc}:187–323 mV, FF: 0.27–0.48 were obtained. - Abstract: In this work, we report preparation and characterization of CuSbS{sub 2} thin films by heating glass/Sb{sub 2}S{sub 3}/Cu layers and their use as absorber material in photovoltaic structures: glass/SnO{sub 2}:F/n-CdS/p-CuSbS{sub 2}/C/Ag. The Sb{sub 2}S{sub 3} thin films of 600 nm were prepared by chemical bath deposition on which copper thin films of 50 nm were thermally evaporated, and the glass/Sb{sub 2}S{sub 3}/Cu multilayers were heated in vacuum at different temperatures. X-ray diffraction analysis showed the formation of orthorhombic CuSbS{sub 2} after heating the precursor layers. Studies on identification and chemical state of the elements were done using X-ray photoelectron spectroscopy. The optical band gap of the CuSbS{sub 2} thin films was 1.55 eV and the thin films were photoconductive. The photovoltaic parameters of the devices using CuSbS{sub 2} as absorber and CdS as window layer were evaluated from the J–V curves, yielding J{sub sc}, V{sub oc}, and FF values in the range of 0.52–3.20 mA/cm{sup 2}, 187–323 mV, and 0.27–0.48, respectively, under illumination of AM1.5 radiation.

The morphology and structure of PVD ZrN-Cu thin films

International Nuclear Information System (INIS)

Audronis, M; Jimenez, O; Leyland, A; Matthews, A

2009-01-01

ZrN-Cu thin films containing variable amounts of copper, namely 8, 33 and 58 at%, were produced by reactive pulsed unbalanced magnetron sputtering. Coatings were found to possess hardness values of 22.5 GPa, 9.5 GPa and 3.7 GPa, respectively. The morphology of coatings was investigated by field emission gun scanning electron microscopy and the structure (microstructure and nanostructure) was investigated by conventional (bright-field and dark-field imaging) and high-resolution transmission electron microscopy. Complementary x-ray diffraction experiments were also performed. ZrN coatings containing 8 at% of copper were found to possess a nano-columnar structure composed of ZrN columnar grains, the diameter of which was approximately 15-35 nm. The majority of the copper content was apparently dissolved within the ZrN grains, rather than existing as a separate phase. Coatings of the two other compositions were found to be composed of a mixture of mostly equiaxed ZrN and Cu nano-crystalline grains, the diameters of which were in the approximate range 5-25 nm. None of the coatings investigated in this study were found to possess the so-called 'nanocomposite' structure, which is often envisaged as crystalline nano-grains surrounded by a thin amorphous intergranular phase. Instead, coatings were found to be either single-phase ZrN (with Cu in substitutional solid solution for Zr) or a mixture of ZrN and Cu nano-grains.

Effects of hydrothermal annealing on characteristics of CuInS{sub 2} thin films by SILAR method

Energy Technology Data Exchange (ETDEWEB)

Shi Yong, E-mail: sys-99@163.com [Key Laboratory of Industrial Ecology and Environmental Engineering and State Key Laboratory of Fine Chemical, School of Environmental Sciences and Technology, Dalian University of Technology, Dalian 116024 (China); Xue Fanghong [Key Laboratory of Industrial Ecology and Environmental Engineering and State Key Laboratory of Fine Chemical, School of Environmental Sciences and Technology, Dalian University of Technology, Dalian 116024 (China); Li Chunyan [School of Materials, Dalian University of Technology, Dalian 116024 (China); Zhao Qidong; Qu Zhenping; Li Xinyong [Key Laboratory of Industrial Ecology and Environmental Engineering and State Key Laboratory of Fine Chemical, School of Environmental Sciences and Technology, Dalian University of Technology, Dalian 116024 (China)

2012-07-15

CuInS{sub 2} thin films have been deposited by successive ionic layer absorption and reaction (SILAR) method, then annealed in a Na{sub 2}S solution (denoted as hydrothermal annealing) at 200 Degree-Sign C for different time. The effect of hydrothermal annealing on the properties of the films was studied by X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM) and optical absorption spectroscopy. The XRD, TEM and SEM results indicate that well-crystallized CuInS{sub 2} films could be obtained after annealing in 0.1 mol/L Na{sub 2}S solution for 1.5 h. The annealed CuInS{sub 2} films were slightly S-rich and the direct band gap varied from 1.32 to 1.58 eV as the annealing time increased from 0.5 h to 2 h.

Cu-Doped ZnO Thin Films Deposited by a Sol-Gel Process Using Two Copper Precursors: Gas-Sensing Performance in a Propane Atmosphere

Directory of Open Access Journals (Sweden)

Heberto Gómez-Pozos

2016-01-01

Full Text Available A study on the propane gas-sensing properties of Cu-doped ZnO thin films is presented in this work. The films were deposited on glass substrates by sol-gel and dip coating methods, using zinc acetate as a zinc precursor, copper acetate and copper chloride as precursors for doping. For higher sensitivity values, two film thickness values are controlled by the six and eight dippings, whereas for doping, three dippings were used, irrespective of the Cu precursor. The film structure was analyzed by X-ray diffractometry, and the analysis of the surface morphology and film composition was made through scanning electron microscopy (SEM and secondary ion mass spectroscopy (SIMS, respectively. The sensing properties of Cu-doped ZnO thin films were then characterized in a propane atmosphere, C3H8, at different concentration levels and different operation temperatures of 100, 200 and 300 °C. Cu-doped ZnO films doped with copper chloride presented the highest sensitivity of approximately 6 × 104, confirming a strong dependence on the dopant precursor type. The results obtained in this work show that the use of Cu as a dopant in ZnO films processed by sol-gel produces excellent catalysts for sensing C3H8 gas.

CuInSe2-Based Thin-Film Photovoltaic Technology in the Gigawatt Production Era

Science.gov (United States)

Kushiya, Katsumi

2012-10-01

The objective of this paper is to review current status and future prospect on CuInSe2 (CIS)-based thin-film photovoltaic (PV) technology. In CIS-based thin-film PV technology, total-area cell efficiency in a small-area (i.e., smaller than 1 cm2) solar cell with top grids has been over 20%, while aperture-area efficiency in a large-area (i.e., larger than 800 cm2 as definition) monolithic module is approaching to an 18% milestone. However, most of the companies with CIS-based thin-film PV technology still stay at a production research stage, except Solar Frontier K.K. In July, 2011, Solar Frontier has joined the gigawatt (GW) group by starting up their third facility with a 0.9-GW/year production capacity. They are keeping the closest position to pass a 16% module-efficiency border by transferring the developed technologies in the R&D and accelerating the preparation for the future based on the concept of a product life-cycle management.

Solution processible Cu{sub 2}SnS{sub 3} thin films for cost effective photovoltaics: Characterization

Energy Technology Data Exchange (ETDEWEB)

Dias, Sandra, E-mail: dias.sandra123@gmail.com; Murali, Banavoth; Krupanidhi, S.B.

2015-11-01

Thin films of Cu{sub 2}SnS{sub 3} (CTS) were deposited by the facile solution processed sol–gel route followed by a low-temperature annealing. The Cu–Sn-thiourea complex formation was analysed using Fourier Transform Infrared spectrophotometer (FTIR). The various phase transformations and the deposition temperature range for the initial precursor solution was determined using Thermogravimetric analysis (TGA) and Differential Scanning Calorimetry (DSC). X-Ray Diffraction (XRD) studies revealed the tetragonal phase formation of the CTS annealed films. Raman spectroscopy studies further confirmed the tetragonal phase formation and the absence of any deterioratory secondary phases. The morphological investigations and compositional analysis of the films were determined using Scanning Electron Microscopy (SEM) and Energy Dispersive Spectroscopy (EDS) respectively. Atomic Force Microscopy (AFM) was used to estimate the surface roughness of 1.3 nm. The absorption coefficient was found to be 10{sup 4} cm{sup −1} and bandgap 1.3 eV which qualifies CTS to be a potential candidate for photovoltaic applications. The refractive index, extinction coefficient and relative permittivity of the film were measured by Spectroscopic ellipsometry. Hall effect measurements, indicated the p type nature of the films with a hole concentration of 2 × 10{sup 18} cm{sup −3}, electrical conductivity of 9 S/cm and a hole mobility of 29 cm{sup 2}/V. The properties of CTS as deduced from the current study, present CTS as a potential absorber layer material for thin film solar cells. - Highlights: • Cu{sub 2}SnS{sub 3} thin films have been synthesized by spin coating of a precursor solution. • The Cu–Sn-thiourea complex precursor was analysed. • The structural, optical and electrical properties of the thin films were studied. • Totally 24 infra-red, 30 optical, 29 Raman and 30 hyper Raman modes are active. • Refractive index, extinction coefficient and relative

Structure, surface morphology and electrical properties of evaporated Ni thin films: Effect of substrates, thickness and Cu underlayer

International Nuclear Information System (INIS)

Hemmous, M.; Layadi, A.; Guittoum, A.; Souami, N.; Mebarki, M.; Menni, N.

2014-01-01

Series of Ni thin films have been deposited by thermal evaporation onto glass, Si(111), Cu, mica and Al 2 O 3 substrates with and without a Cu underlayer. The Ni thicknesses, t, are in the 4 to 163 nm range. The Cu underlayer has also been evaporated with a Cu thickness equal to 27, 52 and 90 nm. The effects of substrate, the Ni thickness and the Cu underlayer on the structural and electrical properties of Ni are investigated. Rutherford Backscattering Spectroscopy was used to probe the Ni/Substrate and Ni–Cu underlayer interfaces and to measure both Ni and Cu thicknesses. The texture, the strain and the grain size values were derived from X-ray diffraction experiments. The surface morphology is studied by means of a Scanning Electron Microscope. The electrical resistivity is measured by the four point probe. The Ni films grow with the <111> texture on all substrates. The Ni grain sizes D increase with increasing thickness for the glass, Si and mica substrates and decrease for the Cu one. The strain ε is positive for low thickness, decreases in magnitude and becomes negative as t increases. With the Cu underlayer, the growth mode goes through two phases: first, the stress (grain size) increases (decreases) up to a critical thickness t Cr , then stress is relieved and grain size increases. All these results will be discussed and correlated. - Highlights: • The structural and electrical properties of evaporated Ni thin films are studied. • The effect of thickness, substrates and Cu underlayer is investigated. • Texture, grain size, strain and surface morphology are discussed. • Growth modes are described as a function of Ni thickness

Diffusion and influence of Cu on properties of CdTe thin films and CdTe/CdS cells