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Sample records for cs te zn

  1. Composite detector for mixed radiations based on CsI(Tl) and dispersions of small ZnSe(Te) crystals

    International Nuclear Information System (INIS)

    Ryzhikov, V.; Gal'chinetskii, L.; Katrunov, K.; Lisetskaya, E.; Gavriluk, V.; Zelenskaya, O.; Starzhynskiy, N.; Chernikov, V.

    2005-01-01

    A new large area detector of high-energy X-ray and β-radiation has been designed and studied. A composite material based on small-crystalline ZnSe(Te) was applied onto the wide surface of a light guide. An experimental specimen has been prepared, which showed β-sensitivity C β =5.5cm 2 . The spectrograms of a 90 Sr+ 90 Y β-source obtained with the specimen under study make it possible to evaluate the age of the source by the ratio of low- and high-energy regions of the spectrum. The combined detector (CD) comprises a single crystalline plate of ZnSe(Te) placed onto the output window of a scintillating transparent light guide made of CsI(Tl) in the shape of a truncated pyramid. The CsI(Tl) light guide is used to create an additional channel for detection of γ-radiation, as well as for protecting the photodiode from the penetrating radiation. It is shown that introduction of the light guide does not worsen the energy resolution characteristics of ZnSe(Te). Separate detection of α- and γ-radiation has been achieved under simultaneous excitation by 239 Pu (ZnSe(Te), R α =6%) and 241 Am (CsI(Tl), R γ =20%). The use of selective optical filters allows separation of the peaks of total absorption (p.t.a.) in the case of their superposition

  2. Studies of scintillation light nonproportionality of ZnSe(Te), CsI(Tl) and YAP(Ce) crystals using heavy ions

    CERN Document Server

    Klamra, W; Kapusta, M; Kérek, A; Moszynski, M; Norlin, L O; Novák, D; Possnert, G

    2002-01-01

    The scintillation light yield for ZnSe(Te), CsI(Tl) and YAP(Ce) crystals have been studied with alpha particles, sup 1 sup 2 C and sup 8 sup 1 Br in the energy region 2.8-42.2 MeV. A nonproportional behavior was observed, mostly pronounced for alpha particles on YAP(Ce). The results are understood in terms of delta-rays effect.

  3. Phase diagrams of ZnTe-HgTe-Te and ZnTe-CdTe-HgTe-Te systems

    International Nuclear Information System (INIS)

    Andrukhiv, A.M.; Litvak, A.M.; Mironov, K.E.

    1992-01-01

    ZnTe-HgTe-Te system liquidus surface is investigated and solid solution layers are produced in this system by the method of liquid-phase epitaxy (LPE). The theoretical analysis of experimental and theoretical data allows to calculate the diagram of ZnTe-CdTe-HgTe-Te system fusibility. A significant effect of elastic stresses of the epitaxial layer, grown on CdTe substrate, on the process of LPE of solid solutions is established

  4. ZnSe/ZnSeTe Superlattice Nanotips

    Directory of Open Access Journals (Sweden)

    Young SJ

    2010-01-01

    Full Text Available Abstract The authors report the growth of ZnSe/ZnSeTe superlattice nanotips on oxidized Si(100 substrate. It was found the nanotips exhibit mixture of cubic zinc-blende and hexagonal wurtzite structures. It was also found that photoluminescence intensities observed from the ZnSe/ZnSeTe superlattice nanotips were much larger than that observed from the homogeneous ZnSeTe nanotips. Furthermore, it was found that activation energies for the ZnSe/ZnSeTe superlattice nanotips with well widths of 16, 20, and 24 nm were 76, 46, and 19 meV, respectively.

  5. Instruments and detectors on the base of scintillator crystals ZnSe(Te), CWO, CsI(Tl) for systems of security and customs inspection systems

    International Nuclear Information System (INIS)

    Ryzhikov, V.D.; Opolonin, A.D.; Pashko, P.V.; Svishch, V.M.; Volkov, V.G.; Lysetskaya, E.K.; Kozin, D.N.; Smith, C.

    2005-01-01

    Results of experimental studies of detector arrays scintillator-photodiode (S-PD) and scintillator-photoreceiving device (S-PRD) used for X-ray digital radiography have shown that there exist further possibilities to increase spatial resolution of this system up to 2-3 line pairs per mm. Theoretical analysis and experimental studies show that the two-energy detection method not only allows one to detect organics on the background of metal, but also substantially increases (by 3-5 times) the detection ability of the system as a whole, especially if parameters of the S-PD pair are optimized, in particular, when ZnSe(Te) is used in the low-energy circuit. A possibility to distinguish, in principle, between substances with insignificant differences in atomic number has been theoretically proven--by transition to multi-energy radiography. 3D-imaging has been realized using S-PD detector arrays. On base of theoretical and experimental search was installation of several types of inspection systems for control objects with square size 0.4x0.6-2.5x3.5 m

  6. On the cesium-rich part of the Cs-Te phase diagram

    International Nuclear Information System (INIS)

    Boer, R. de; Cordfunke, E.H.P.

    1995-03-01

    The cesium-tellurium system in the region between 33 and 55 at.% Te has been investigated with X-ray diffraction and DSC. The existence of the compounds Cs 5 Te 3 and CsTe is demonstrated. The latter compound exhibits a structural transition at elevated temperature, as does the compound Cs 2 Te. The earlier reported compounds Cs 3 Te 2 and Cs 5 Te 4 do not exist. (orig.)

  7. Polarization effect of CdZnTe imaging detector based on high energy γ source

    International Nuclear Information System (INIS)

    Li Miao; Xiao Shali; Wang Xi; Shen Min; Zhang Liuqiang; Cao Yulin; Chen Yuxiao

    2011-01-01

    The inner electric potential distribution of CdZnTe detector was derived by applying poisson equation with the first type boundary condition, and the polarization effect of CdZnTe pixellated detector for imaging 137 Cs γ source was investigated. The results of numerical calculation and experiment indicate that electric potential distribution is mainly influenced by applied bias for low charge density in CdZnTe crystal and, in turn, there is linear relationship between electric potential distribution and applied bias that induces uniform electric field under low irradiated flux. However, the electric potential appears polarization phenomenon, and the electric field in CdZnTe crystal is distorted when CdZnTe detector is under high irradiated flux. Consequently, charge carriers in CdZnTe crystal drift towards the edge pixels of irradiated region, and hence, the shut-off central pixels are surrounded by a ring of low counting pixels. The polarization effect indeed deteriorates the performance of CdZnTe detector severely and the event counts of edge pixels for irradiated region reduce about 70%. (authors)

  8. Zn2(TeO3Br2

    Directory of Open Access Journals (Sweden)

    Mats Johnsson

    2008-05-01

    Full Text Available Single crystals of dizinc tellurium dibromide trioxide, Zn2(TeO3Br2, were synthesized via a transport reaction in sealed evacuated silica tubes. The compound has a layered crystal structure in which the building units are [ZnO4Br] distorted square pyramids, [ZnO2Br2] distorted tetrahedra, and [TeO3E] tetrahedra (E being the 5s2 lone pair of Te4+ joined through sharing of edges and corners to form layers of no net charge. Bromine atoms and tellurium lone pairs protrude from the surfaces of each layer towards adjacent layers. This new compound Zn2(TeO3Br2 is isostructural with the synthetic compounds Zn2(TeO3Cl2, CuZn(TeO32, Co2(TeO3Br2 and the mineral sophiite, Zn2(SeO3Cl2.

  9. Properties of the ZnSe/ZnTe heterojunction prepared by a multi-source evaporation of ZnTe:Sb on ZnSe single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Romeo, N [Parma Univ. (Italy). Ist. di Fisica; First, F [Uniwersytet Mikolaja Kopernika, Torun (Poland). Inst. Fizyki; Seuret, D [Universidad de La Habana, (Cuba). Facultad de Fisica-Matematica

    1979-07-16

    A new method of preparation is described of a ZnSe/ZnTe heterojunction in which Sb-doped ZnTe is deposited by a multi-source apparatus on ZnSe monocrystals. The properties of the heterojunction was studied, esp. the I-U characteristic, the 1/C/sup 2/ plot as a function of applied voltage, the photocurrent spectrum, and the electroluminescence spectrum.

  10. Highest-order optical phonon-mediated relaxation in CdTe/ZnTe quantum dots

    International Nuclear Information System (INIS)

    Masumoto, Yasuaki; Nomura, Mitsuhiro; Okuno, Tsuyoshi; Terai, Yoshikazu; Kuroda, Shinji; Takita, K.

    2003-01-01

    The highest 19th-order longitudinal optical (LO) phonon-mediated relaxation was observed in photoluminescence excitation spectra of CdTe self-assembled quantum dots grown in ZnTe. Hot excitons photoexcited highly in the ZnTe barrier layer are relaxed into the wetting-layer state by emitting multiple LO phonons of the barrier layer successively. Below the wetting-layer state, the LO phonons involved in the relaxation are transformed to those of interfacial Zn x Cd 1-x Te surrounding CdTe quantum dots. The ZnTe-like and CdTe-like LO phonons of Zn x Cd 1-x Te and lastly acoustic phonons are emitted in the relaxation into the CdTe dots. The observed main relaxation is the fast relaxation directly into CdTe quantum dots and is not the relaxation through either the wetting-layer quantum well or the band bottom of the ZnTe barrier layer. This observation shows very efficient optical phonon-mediated relaxation of hot excitons excited highly in the ZnTe conduction band through not only the ZnTe extended state but also localized state in the CdTe quantum dots reflecting strong exciton-LO phonon interaction of telluride compounds

  11. Pixelated CdZnTe drift detectors

    DEFF Research Database (Denmark)

    Kuvvetli, Irfan; Budtz-Jørgensen, Carl

    2005-01-01

    A technique, the so-called Drift Strip Method (DSM), for improving the CdZnTe detector energy response to hard X-rays and gamma-rays was applied as a pixel geometry. First tests have confirmed that this detector type provides excellent energy resolution and imaging performance. We specifically...... report on the performance of 3 mm thick prototype CZT drift pixel detectors fabricated using material from eV-products. We discuss issues associated with detector module performance. Characterization results obtained from several prototype drift pixel detectors are presented. Results of position...

  12. Studies of the interaction of CS@ZnS:Mn with bovine serum albumin under illumination

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Li, E-mail: 2476625723@qq.com [Institute of Agricultural Quality Standards and Testing Technology Research, Hubei Academy of Agricultural Science, Wuhan 430064 (China); Xiao, Ling [School of Resource and Environmental Science, Hubei Biomass-Resource Chemistry and Environmental Biotechnology Key Laboratory, Wuhan University, Wuhan 430072 (China)

    2015-09-15

    Highlights: • The interaction and illumination damages of CS@ZnS:Mn D-dots to BSA were studied. • The quenching mechanism of CS@ZnS:Mn D-dots with BSA belongs to dynamic quenching. • The hydrophobic interaction plays a major role; the binding processes are spontaneous. • The FL enhancement of CS@ZnS:Mn D-dots by BSA under UV illumination was observed. • The probable mechanism is mainly a photo-induced free radical procedure. - Abstract: In this study, chitosan coated Mn-doped ZnS quantum dots (CS@ZnS:Mn D-dots) were obtained in aqueous media under ambient pressure. The interaction and illumination damages of CS@ZnS:Mn D-dots with bovine serum albumin (BSA) were studied by means of ultraviolet–visible (UV–vis) and fluorescence (FL) spectra. It was found that the FL of BSA was quenched by CS@ZnS:Mn D-dots. The dominating quenching mechanism of CS@ZnS:Mn D-dots with BSA belongs to dynamic quenching. Hydrophobic interaction plays a major role in the CS@ZnS:Mn–BSA interaction; binding processes are spontaneous. Influencing factors such as illumination time and CS@ZnS:Mn D-dots concentrations were considered. The FL quenching effect of BSA by CS@ZnS:Mn D-dots is enhanced with the increase of illumination time and CS@ZnS:Mn D-dots concentration. The FL enhancement of CS@ZnS:Mn D-dots by BSA under UV illumination was also observed. It was proved that, the interaction of CS@ZnS:Mn D-dots with BSA under UV illumination is mainly a result of a photo-induced free radical procedure. CS@ZnS:Mn D-dots may be used as photosensitizers in photodynamic therapy.

  13. Studies of the interaction of CS@ZnS:Mn with bovine serum albumin under illumination

    International Nuclear Information System (INIS)

    Liu, Li; Xiao, Ling

    2015-01-01

    Highlights: • The interaction and illumination damages of CS@ZnS:Mn D-dots to BSA were studied. • The quenching mechanism of CS@ZnS:Mn D-dots with BSA belongs to dynamic quenching. • The hydrophobic interaction plays a major role; the binding processes are spontaneous. • The FL enhancement of CS@ZnS:Mn D-dots by BSA under UV illumination was observed. • The probable mechanism is mainly a photo-induced free radical procedure. - Abstract: In this study, chitosan coated Mn-doped ZnS quantum dots (CS@ZnS:Mn D-dots) were obtained in aqueous media under ambient pressure. The interaction and illumination damages of CS@ZnS:Mn D-dots with bovine serum albumin (BSA) were studied by means of ultraviolet–visible (UV–vis) and fluorescence (FL) spectra. It was found that the FL of BSA was quenched by CS@ZnS:Mn D-dots. The dominating quenching mechanism of CS@ZnS:Mn D-dots with BSA belongs to dynamic quenching. Hydrophobic interaction plays a major role in the CS@ZnS:Mn–BSA interaction; binding processes are spontaneous. Influencing factors such as illumination time and CS@ZnS:Mn D-dots concentrations were considered. The FL quenching effect of BSA by CS@ZnS:Mn D-dots is enhanced with the increase of illumination time and CS@ZnS:Mn D-dots concentration. The FL enhancement of CS@ZnS:Mn D-dots by BSA under UV illumination was also observed. It was proved that, the interaction of CS@ZnS:Mn D-dots with BSA under UV illumination is mainly a result of a photo-induced free radical procedure. CS@ZnS:Mn D-dots may be used as photosensitizers in photodynamic therapy

  14. Noise in CdZnTe detectors

    International Nuclear Information System (INIS)

    Luke, P. N.; Amman, M.; Lee, J. S.; Manfredi, P. F.

    2000-01-01

    Noise in CdZnTe devices with different electrode configurations was investigated. Measurements on devices with guard-ring electrode structures showed that surface leakage current does not produce any significant noise. The parallel white noise component of the devices appeared to be generated by the bulk current alone, even though the surface current was substantially higher. This implies that reducing the surface leakage current of a CdZnTe detector may not necessarily result in a significant improvement in noise performance. The noise generated by the bulk current is also observed to be below full shot noise. This partial suppression of shot noise may be the result of Coulomb interaction between carriers or carrier trapping. Devices with coplanar strip electrodes were observed to produce a 1/f noise term at the preamplifier output. Higher levels of this 1/f noise were observed with decreasing gap widths between electrodes. The level of this 1/f noise appeared to be independent of bias voltage and leakage current but was substantially reduced after certain surface treatments

  15. Femtosecond response time measurements of a Cs2Te photocathode

    Science.gov (United States)

    Aryshev, A.; Shevelev, M.; Honda, Y.; Terunuma, N.; Urakawa, J.

    2017-07-01

    Success in design and construction of a compact, high-brightness accelerator system is strongly related to the production of ultra-short electron beams. Recently, the approach to generate short electron bunches or pre-bunched beams in RF guns directly illuminating a high quantum efficiency semiconductor photocathode with femtosecond laser pulses has become attractive. The measurements of the photocathode response time in this case are essential. With an approach of the interferometer-type pulse splitter deep integration into a commercial Ti:Sa laser system used for RF guns, it has become possible to generate pre-bunched electron beams and obtain continuously variable electron bunch separation. In combination with a well-known zero-phasing technique, it allows us to estimate the response time of the most commonly used Cs2Te photocathode. It was demonstrated that the peak-to-peak rms time response of Cs2Te is of the order of 370 fs, and thereby, it is possible to generate and control a THz sequence of relativistic electron bunches by a conventional S-band RF gun. This result can also be applied for investigation of other cathode materials and electron beam temporal shaping and further opens a possibility to construct wide-range tunable, table-top THz free electron laser.

  16. Growth And Characterization Of LPE CdHgTe/CdZnTe/CdZnTe Structure

    Science.gov (United States)

    Pelliciari, B.; Chamonal, J. P.; Destefanis, G. L.; Dicioccio, L.

    1988-05-01

    The liquid phase epitaxial technique is used to grow Hgl_x Cdx Te (x = .23) from a Te - rich solution onto a Cdl_y ZnyTe (y = .04) buffer layer grown from a Te-rich solution onto a Cdi_yZnyTe bulk substrate in an open tube multibin horizontal slider apparatus.Growth conditions and physical characterizations of both the buffer layer and the CdHgTe layer are given ; electrical properties of the CdHgTe layer are also presen-ted. PV detectors were successfully obtained on such a structure using an ion-implanted technology and their characteristics at 77 K for a 10.1 ,um cut-off wavelength are given.

  17. Zn2(TeO3)Br2

    Science.gov (United States)

    Zhang, Dong; Johnsson, Mats

    2008-01-01

    Single crystals of dizinc tellurium dibromide trioxide, Zn2(TeO3)Br2, were synthesized via a transport reaction in sealed evacuated silica tubes. The compound has a layered crystal structure in which the building units are [ZnO4Br] distorted square pyramids, [ZnO2Br2] distorted tetra­hedra, and [TeO3 E] tetra­hedra (E being the 5s 2 lone pair of Te4+) joined through sharing of edges and corners to form layers of no net charge. Bromine atoms and tellurium lone pairs protrude from the surfaces of each layer towards adjacent layers. This new compound Zn2(TeO3)Br2 is isostructural with the synthetic compounds Zn2(TeO3)Cl2, CuZn(TeO3)2, Co2(TeO3)Br2 and the mineral sophiite, Zn2(SeO3)Cl2. PMID:21202162

  18. Monte Carlo Transverse Emittance Study on Cs2Te

    CERN Document Server

    Banfi, F; Galimberti, P G; Giannetti, C; Pagliara, S; Parmigiani, F; Pedersoli, E

    2005-01-01

    A Monte Carlo study of electron transport in Cs2Te films is performed to investigate the transverse emittance epsilon at the cathode surface. We find the photoemitted electron angular distribution and explain the physical mechanism involved in the process, a mechanism hindered by the statistical nature of the Monte Carlo method. The effects of electron-phonon scattering are discussed. The transverse emittance is calculated for different radiation wavelengths and a laser spot size of 1.5*10(-3) m. For a laser radiation at 265 nm we find epsilon = 0.56 mm-mrad. The dependence of epsilon and the quantum yield on the electron affinity Ea is also investigated. The data shows the importance of aging/contamination on the material.

  19. Defect complexes formed with Ag atoms in CDTE, ZnTe, and ZnSe

    CERN Document Server

    Wolf, H; Ostheimer, V; Hamann, J; Lany, S; Wichert, T

    2000-01-01

    Using the radioactive acceptor $^{111}\\!$Ag for perturbed $\\gamma$-$\\gamma$-angular correlation (PAC) spectroscopy for the first time, defect complexes formed with Ag are investigated in the II-VI semiconductors CdTe, ZnTe and ZnSe. The donors In, Br and the Te-vacancy were found to passivate Ag acceptors in CdTe via pair formation, which was also observed in In-doped ZnTe. In undoped or Sb-doped CdTe and in undoped ZnSe, the PAC experiments indicate the compensation of Ag acceptors by the formation of double broken bond centres, which are characterised by an electric field gradient with an asymmetry parameter close to h = 1. Additionally, a very large electric field gradient was observed in CdTe, which is possibly connected with residual impurities.

  20. Electrical properties of MIS devices on CdZnTe/HgCdTe

    Science.gov (United States)

    Lee, Tae-Seok; Jeoung, Y. T.; Kim, Hyun Kyu; Kim, Jae Mook; Song, Jinhan; Ann, S. Y.; Lee, Ji Y.; Kim, Young Hun; Kim, Sun-Ung; Park, Mann-Jang; Lee, S. D.; Suh, Sang-Hee

    1998-10-01

    In this paper, we report the capacitance-voltage (C-V) properties of metal-insulator-semiconductor (MIS) devices on CdTe/HgCdTe by the metalorganic chemical vapor deposition (MOCVD) and CdZnTe/HgCdTe by thermal evaporation. In MOCVD, CdTe layers are directly grown on HgCdTe using the metal organic sources of DMCd and DiPTe. HgCdTe layers are converted to n-type and the carrier concentration, ND is low 1015 cm-3 after Hg-vacancy annealing at 260 degrees Celsius. In thermal evaporation, CdZnTe passivation layers were deposited on HgCdTe surfaces after the surfaces were etched with 0.5 - 2.0% bromine in methanol solution. To investigate the electrical properties of the MIS devices, the C-V measurement is conducted at 80 K and 1 MHz. C-V curve of MIS devices on CdTe/HgCdTe by MOCVD has shown nearly flat band condition and large hysteresis, which is inferred to result from many defects in CdTe layer induced during Hg-vacancy annealing process. A negative flat band voltage (VFB approximately equals -2 V) and a small hysteresis have been observed for MIS devices on CdZnTe/HgCdTe by thermal evaporation. It is inferred that the negative flat band voltage results from residual Te4+ on the surface after etching with bromine in methanol solution.

  1. Strong sp-d exchange coupling in ZnMnTe/ZnMgTe core/shell nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Wojnar, Piotr; Janik, Elzbieta; Szymura, Malgorzata; Zaleszczyk, Wojciech; Kret, Slawomir; Klopotowski, Lukasz; Wojciechowski, Tomasz; Baczewski, Lech T.; Wiater, Maciej; Karczewski, Grzegorz; Wojtowicz, Tomasz; Kossut, Jacek [Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw (Poland); Suffczynski, Jan; Papierska, Joanna [Institute of Experimental Physics, Warsaw University, ul. Hoza 69, 00-681 Warsaw (Poland)

    2014-07-15

    In this work, our recent progress in the growth and optical studies of telluride nanowire heterostructures containing a small molar fraction of magnetic Mn-ions of only a few percent is overviewed. ZnMnTe/ZnMgTe core/shell nanowires (NWs) are grown by molecular beam epitaxy by employing the vapor-liquid-solid growth mechanism assisted with gold catalyst. The structures are studied by means of photoluminescence and microphotoluminescence in an external magnetic field. In the first step, however, an activation of the near band edge emission from ZnTe and ZnMnTe nanowires is described, which is achieved by coating the nanowires with shells made of ZnMgTe. The role of these shells is to passivate Zn(Mn)Te surface states. The incorporation of Mn ions into the crystalline lattice of ZnMnTe nanowires is manifested as a considerable blue shift of near band edge emission with increasing Mn concentration inside the nanowire cores, which reflects directly the increase of their energy gap. In an external magnetic field the near band edge emission exhibits a giant spectral redshift accompanied by an increase of the circular polarization of the emitted light. Both effect are fingerprints of giant Zeeman splitting of the band edges due to sp-d exchange interaction between the band carriers and magnetic Mn-ions. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  2. n-(CdMgTe/CdTe)/(p-(CdTe/ZnCdTe/ZnTe)/p-GaAs heterostructure diode for photosensor applications

    Science.gov (United States)

    Yahia, I. S.; AlFaify, S.; Abutalib, M. M.; Chusnutdinow, S.; Wojtowicz, T.; Karczewski, G.; Yakuphanoglu, F.; Al-Bassam, A.; El-Naggar, A. M.; El-Bashir, S. M.

    2016-05-01

    High quality n-(CdMgTe:I/n-CdTe:I)/(p-CdTe:N/p-ZnCdTe:N/p-ZnTe:N)/p-GaAs heterojunction diodes have been fabricated by molecular beam epitaxial growth. The illumination effect on the complex impedance and conductivity of heterostructure diode was investigated. The illumination intensities were taken up to the 200 mW/cm2 with frequency range of 42 Hz to 1 MHz. The observed real and imaginary parts of the complex impedance were strongly dependent on the illumination frequency. The inverse relation was observed between the illumination intensity and the complex impedance. The relaxation mechanism of the diode was analyzed by the Cole-Cole plots. The radius of the Cole-Cole curve decreases with increasing illumination intensity. This suggests a mechanism of illumination dependent on the relaxation process. It is also found that the conductivity increases linearly with increasing the illumination intensity. We can conclude that the new design heterostructure diode in our work is a good candidate in photodetector and optoelectronic applications.

  3. Characterization of CdZnTe ambient temperature detectors

    International Nuclear Information System (INIS)

    Lavietes, A.

    1994-09-01

    A great deal of interest has been generated in the use of cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) detectors for ambient temperature detection of radionuclides. The addition of zinc to CdTe provides several benefits that enhance the materials operational characteristics at ambient temperature. Recent movement in the industry is to produce larger volume detectors using CdZnTe without much known about the effects of larger geometry on performance. The purpose of this study is to get an idea of the relationship of detector performance to both area and thickness variations

  4. Numerical study of the influence of ZnTe thickness on CdS/ZnTe solar cell performance

    Science.gov (United States)

    Skhouni, Othmane; El Manouni, Ahmed; Mari, Bernabe; Ullah, Hanif

    2016-05-01

    At present most of II-VI semiconductor based solar cells use the CdTe material as an absorber film. The simulation of its performance is realized by means of various numerical modelling programs. We have modelled a solar cell based on zinc telluride (ZnTe) thin film as absorber in substitution to the CdTe material, which contains the cadmium element known by its toxicity. The performance of such photovoltaic device has been numerically simulated and the thickness of the absorber layer has been optimized to give the optimal conversion efficiency. A photovoltaic device consisting of a ZnTe layer as absorber, CdS as the buffer layer and ZnO as a window layer was modelled through Solar Cell Capacitance Simulator Software. Dark and illuminated I-V characteristics and the results for different output parameters of ZnO/CdS/ZnTe solar cell were analyzed. The effect of ZnTe absorber thickness on different main working parameters such as: open-circuit voltage Voc, short-circuit current density Jsc, fill factor FF, photovoltaic conversion efficiency η was intensely studied in order to optimize ZnTe film thickness. This study reveals that increasing the thickness of ZnTe absorber layer results in higher efficiency until a maximum value and then decreases slightly. This maximum was found to be 10% at ZnTe optimum thickness close to 2 µm. Contribution to the topical issue "Materials for Energy Harvesting, Conversion and Storage (ICOME 2015) - Elected submissions", edited by Jean-Michel Nunzi, Rachid Bennacer and Mohammed El Ganaoui

  5. Analysis of Etched CdZnTe Substrates

    Science.gov (United States)

    Benson, J. D.; Bubulac, L. O.; Jaime-Vasquez, M.; Lennon, C. M.; Arias, J. M.; Smith, P. J.; Jacobs, R. N.; Markunas, J. K.; Almeida, L. A.; Stoltz, A.; Wijewarnasuriya, P. S.; Peterson, J.; Reddy, M.; Jones, K.; Johnson, S. M.; Lofgreen, D. D.

    2016-09-01

    State-of-the-art as-received (112)B CdZnTe substrates have been examined for surface impurity contamination and polishing residue. Two 4 cm × 4 cm and one 6 cm × 6 cm (112)B state-of-the-art as-received CdZnTe wafers were analyzed. A maximum surface impurity concentration of Al = 1.7 × 1015 atoms cm-2, Si = 3.7 × 1013 atoms cm-2, Cl = 3.12 × 1015 atoms cm-2, S = 1.7 × 1014 atoms cm-2, P = 1.1 × 1014 atoms cm-2, Fe = 1.0 × 1013 atoms cm-2, Br = 1.2 × 1014 atoms cm-2, and Cu = 4 × 1012 atoms cm-2 was observed on the as-received CdZnTe wafers. CdZnTe particulates and residual SiO2 polishing grit were observed on the surface of the as-received (112)B CdZnTe substrates. The polishing grit/CdZnTe particulate density on CdZnTe wafers was observed to vary across a 6 cm × 6 cm wafer from ˜4 × 107 cm-2 to 2.5 × 108 cm-2. The surface impurity and damage layer of the (112)B CdZnTe wafers dictate that a molecular beam epitaxy (MBE) preparation etch is required. The contamination for one 4 cm × 4 cm and one 6 cm × 6 cm CdZnTe wafer after a standard MBE Br:methanol preparation etch procedure was also analyzed. A maximum surface impurity concentration of Al = 2.4 × 1015 atoms cm-2, Si = 4.0 × 1013 atoms cm-2, Cl = 7.5 × 1013 atoms cm-2, S = 4.4 × 1013 atoms cm-2, P = 9.8 × 1013 atoms cm-2, Fe = 1.0 × 1013 atoms cm-2, Br = 2.9 × 1014 atoms cm-2, and Cu = 5.2 × 1012 atoms cm-2 was observed on the MBE preparation-etched CdZnTe wafers. The MBE preparation-etched surface contamination consists of Cd(Zn)Te particles/flakes. No residual SiO2 polishing grit was observed on the (112)B surface.

  6. THz induced nonlinear absorption in ZnTe

    DEFF Research Database (Denmark)

    Pedersen, Pernille Klarskov; Jepsen, Peter Uhd

    2015-01-01

    Absorption spectra of ZnTe during strong-field THz interaction are investigated. Bleaching of the difference phonon modes below the fundamental TO mode is observed when field strengths higher than 4 MV/cm are applied.......Absorption spectra of ZnTe during strong-field THz interaction are investigated. Bleaching of the difference phonon modes below the fundamental TO mode is observed when field strengths higher than 4 MV/cm are applied....

  7. Analysis of CdS/CdTe devices incorporating a ZnTe:Cu/Ti Contact

    International Nuclear Information System (INIS)

    Gessert, T.A.; Asher, S.; Johnston, S.; Young, M.; Dippo, P.; Corwine, C.

    2007-01-01

    High-performance CdS/CdTe photovoltaic devices can be produced using a ZnTe:Cu/Ti back contact deposited onto the CdTe layer. We observe that prolonged exposure of the ZnTe:Cu and Ti sputtering targets to an oxygen-containing plasma significantly reduces device open-circuit voltage and fill factor. High-resolution compositional analysis of these devices reveals that Cu concentration in the CdTe and CdS layers is lower for devices with poor performance. Capacitance-voltage analysis and related numerical simulations indicate that the net acceptor concentration in the CdTe is also lower for devices with poor performance. Photoluminescence analyses of the junction region reveal that the intensity of a luminescent peak associated with a defect complex involving interstitial Cu (Cu i ) and oxygen on Te (O Te ) is reduced in devices with poor performance. Combined with thermodynamic considerations, these results suggest that oxygen incorporation into the ZnTe:Cu sputtering target reduces the ability of sputtered ZnTe:Cu film to diffuse Cu into the CdTe

  8. Growth and optical properties of CdTe quantum dots in ZnTe nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Wojnar, Piotr; Janik, Elzbieta; Baczewski, Lech T.; Kret, Slawomir; Karczewski, G.; Wojtowicz, Tomasz [Institute of Physics, Polish Academy of Sciences, Al Lotnikow 32/46, 02-668 Warsaw (Poland); Goryca, Mateusz; Kazimierczuk, Tomasz; Kossacki, Piotr [Institute of Experimental Physics, Faculty of Physics, University of Warsaw, ul Hoza 69, 00-681 Warsaw (Poland)

    2011-09-12

    We report on the formation of optically active CdTe quantum dots in ZnTe nanowires. The CdTe/ZnTe nanostructures have been grown by a gold nanocatalyst assisted molecular beam epitaxy in a vapor-liquid solid growth process. The presence of CdTe insertions in ZnTe nanowire results in the appearance of a strong photoluminescence band in the 2.0 eV-2.25 eV energy range. Spatially resolved photoluminescence measurements reveal that this broad emission consists of several sharp lines with the spectral width of about 2 meV. The large degree of linear polarization of these individual emission lines confirms their nanowire origin, whereas the zero-dimensional confinement is proved by photon correlation spectroscopy.

  9. Identification of Zn vacancies in ZnTe doped with Cl and I

    Science.gov (United States)

    Asoka-Kumar, Palakkal; Alatalo, Matti; Wang, Wen

    1997-03-01

    The doping difficulties of II-VI semiconductors are well known. For example, ZnTe can be doped easily to have p-type conductivity but not n-type. We examined Cl and I doped ZnTe using positron annihilation spectroscopy to understand the role of vacancies in the compensation mechanism. The annihilation line shapes from inner-shell electrons can be used for elemental identification[1]. Results from ZnTe:Cl and ZnTe:I show an enhancement of annihilations with Te electrons compared to undoped samples, and is explained as arising due to first neighbor of a Zn vacancy. Theoretical calculations of the annihilation line shapes from bulk ZnTe and Zn and Te vacancies will also be presented. This work was supported in part by the US DOE under contract No. DE-AC02-76CH00016. [1] P. Asoka-Kumar, M. Alatalo, V.J. Ghosh, A.C. Kruseman, B. Nielsen, and K.G. Lynn, Phys. Rev. Lett. Vol. 77, 2097 (1996).

  10. Dispersion of the second-order nonlinear susceptibility in ZnTe, ZnSe, and ZnS

    DEFF Research Database (Denmark)

    Wagner, Hans Peter; Kühnelt, M.; Langbein, Wolfgang Werner

    1998-01-01

    We have measured the absolute values of the second-harmonic generation (SHG) coefficient \\d\\ for the zinc-blende II-VI semiconductors ZnTe, ZnSe, and ZnS at room temperature. The investigated spectral region of the fundamental radiation lambda(F) ranges from 520 to 1321 nm using various pulsed...

  11. Electronic bandstructure of the ZnTe absorber material

    Energy Technology Data Exchange (ETDEWEB)

    Fritsch, Daniel [Leibniz Institute for Solid State and Materials Research IFW Dresden (Germany); Schmidt, Heidemarie [Forschungszentrum Dresden-Rossendorf, Dresden (Germany)

    2009-07-01

    Due to its large absorption coefficient, zinc telluride proved to be useful for the production of high-efficiency multi-junction solar cells. Nowadays ZnTe with a mixture of zincblende and wurtzite phases is fabricated by thin film growth techniques. The optical properties of both phases have been extensively studied by ab initio density functional methods. Here we focus on the question whether the effective electron and hole mass in ZnTe are small enough to meet the high-efficiency expectation of the ZnTe absorber material in solar cells and present direction dependent effective mass and Luttinger and Luttinger-like parameters of cubic and wurtzite ZnTe, respectively. Making use of the transferability of ionic model potential parameters and the experimentally known transition energies of different II-VI compounds ZnX (X=O,S,Se,Te), we obtained one single set of cationic model parameters for the Zn atom. The calculations have been performed by means of the empirical pseudopotential method using a simple empty core model potential.

  12. Polytypism in ZnS, ZnSe, and ZnTe: First-principles study

    KAUST Repository

    Boutaiba, F.; Belabbes, Abderrezak; Ferhat, M.; Bechstedt, F.

    2014-01-01

    We report results of first-principles calculations based on the projector augmented wave (PAW) method to explore the structural, thermodynamic, and electronic properties of cubic (3C) and hexagonal (6H, 4H, and 2H) polytypes of II-VI compounds: ZnS, ZnSe, and ZnTe. We find that the different bond stacking in II-VI polytypes remarkably influences the resulting physical properties. Furthermore, the degree of hexagonality is found to be useful to understand both the ground-state properties and the electronic structure of these compounds. The resulting lattice parameters, energetic stability, and characteristic band energies are in good agreement with available experimental data. Trends with hexagonality of the polytype are investigated.

  13. Polytypism in ZnS, ZnSe, and ZnTe: First-principles study

    KAUST Repository

    Boutaiba, F.

    2014-06-23

    We report results of first-principles calculations based on the projector augmented wave (PAW) method to explore the structural, thermodynamic, and electronic properties of cubic (3C) and hexagonal (6H, 4H, and 2H) polytypes of II-VI compounds: ZnS, ZnSe, and ZnTe. We find that the different bond stacking in II-VI polytypes remarkably influences the resulting physical properties. Furthermore, the degree of hexagonality is found to be useful to understand both the ground-state properties and the electronic structure of these compounds. The resulting lattice parameters, energetic stability, and characteristic band energies are in good agreement with available experimental data. Trends with hexagonality of the polytype are investigated.

  14. Characterization of single crystalline ZnTe and ZnSe grown by vapor phase transport

    Energy Technology Data Exchange (ETDEWEB)

    Trigubo, A B; Di Stefano, M C [FRBA-UTN, (1179) Buenos Aires (Argentina); Aguirre, M H [Dpto de Quim Inorg, Fac de Cs Quim, Univ Complutense, (28040) Madrid (Spain); Martinez, A M; D' Elia, R; Canepa, H; Heredia, E, E-mail: atrigubo@citefa.gov.a [CINSO-CITEFA: (1603) Villa Martelli, Pcia de Buenos Aires (Argentina)

    2009-05-01

    Tubular furnaces were designed and built to obtain single crystalline ZnTe and ZnSe ingots using respectively physical and chemical transport methods. Different temperature profiles and growth rates were analyzed in order to optimize the necessary crystalline quality for device development. Optical and scanning electron micrographs of the corrosion figures produced by chemical etching were used to obtain the dislocation density and the misorientation between adjacent subgrains in ZnTe and ZnSe wafers. Structural quality of the single crystalline material was determined by transmission electronic microscopy. Optical transmittance was measured by infrared transmission spectrometry and the resulting values were compared to commercial samples.

  15. Prototype of the stacked CdZnTe semiconductor detector for 16N measurement

    International Nuclear Information System (INIS)

    Nishizawa, Hiroshi; Inujima, Hiroshi; Fujiwara, Hirotsugu; Nakamura, Hiroaki

    2001-01-01

    Prototype of the Stacked CdZnTe Semiconductor Detector for Measurement The prototype model of the stacked CdZnTe semiconductor detector, which is able to measure the 6.13 MeV γ-ray from 16 N, was fabricated. The prototype's response calculation was carried out by Monte-Carlo method. The result of the response calculation agreed with the experiment data of check sources of 137 Cs and 60 Co, and 16 N which was measured at vicinity of the primary cooling water pipe of the nuclear reactor. The source spectra were unfolded with detector's response function obtained by simulation, and it is indicated that the incident γ-ray energy and its intensity ratio was identified and that the energy of 6 MeV γ-ray could be measured by the prototype of the stacked detector. (author)

  16. Investigation of omnidirectional reflection band in ZnTe/ZnSe distributed Bragg reflector

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Ying-Shin [Department of Electrical Engineering, National Taiwan Ocean University, Keelung 20224, Taiwan (China); Hu, Sheng-Yao [Department of Digital Technology Design, Tungfang Design University, Kaohsiung 82941, Taiwan (China); Lee, Yueh-Chien, E-mail: jacklee@mail.tnu.edu.tw [Department of Electronic Engineering, Tungnan University, New Taipei City 22202, Taiwan (China); Chang, Chung-Cheng; Tiong, Kwong-Kau [Department of Electrical Engineering, National Taiwan Ocean University, Keelung 20224, Taiwan (China); Shen, Ji-Lin [Department of Physics, Chung Yuan Christian University, Chung-Li 32023, Taiwan (China); Chou, Wu-Ching [Department of Electrophysics, National Chiao Tung University, Hsinchu 30010, Taiwan (China)

    2015-11-15

    We report the characteristics of reflectance spectra of the 15- and 20-period ZnTe/ZnSe distributed Bragg reflector grown on GaAs (001) substrates by molecular beam epitaxy. The reflectance spectra measured at various incident angles and polarizations were investigated by the theoretical curves simulated using transfer matrix method. The wavelength variation of the refractive indices described by Sellmeier equation and random thickness model were also considered for the interpretation of the experimentally observed curves. An omnidirectional reflection range defined from the edge of incident-angle-dependent reflection band with TE and TM polarizations is about 15 nm, and is consistent with the observed experimental curves. The results showed that the selected ZnTe and ZnSe materials are suitable for constructing multilayer structures having omnidirectional reflection band. - Highlights: • ZnTe/ZnSe distributed Bragg reflector grown by molecular beam epitaxy. • The reflectance spectra are measured at various incidence angles and polarizations. • The theoretical curves are considered by Sellmeier and random thickness models. • An observed omnidirectional reflection range in ZnTe/ZnSe DBR is about 15 nm.

  17. Zn influence on the plasticity of Cdo{0.96}Zn{0.04}Te

    Science.gov (United States)

    Imhoff, D.; Zozime, A.; Triboulet, R.

    1991-11-01

    Compression tests were performed on CdTe and Cd{0.96}Zn{0.04}Te to elucidate the mechanism through which Zn inhibits dislocation formation and motion during CdTe crystal growth, thus leading to a decreasing of the dislocation density. Uniaxial deformation experiments performed with CdTe and CdZnTe at constant strain rate within a wide temperature range (0. 14;T_m le T le 0.87;T_m,;T_m = 1 365; K), have revealed a strong hardening effect of Zn within the whole temperature range. They also showed in CdZnTe a Portevin Le Chatelier effect between 770 K and 920 K confirmed by static strain aging experiments. Critical resolved shear stress (C.R.S.S.) values at T = 195; K and static strain aging results with CdZnTe point to size effect as the dominant interaction between Zn and dislocations. Thermal activation parameters were estimated in both materials. La déformation plastique a été utilisée comme approche des mécanismes par lesquels le zinc entrave le mouvement des dislocations au cours du processus de croissance cristalline de CdTe massif, réduisant ainsi la densité de dislocations. Les expériences de compression uniaxiale à vitesse constante, réalisées dans CdTe et CdZnTe entre 0,14 T_f et 0,87 T_f ont montré que le zinc est responsable d'un fort durcissement sur tout le domaine de températures étudié. Les expériences de déformation dans CdZnTe ont mis en évidence un phénomène du type Portevin Le Chatelier entre 770 K et 920 K, confirmé par des expériences de vieillissement statique. Les valeurs de scission critique tau_c à 195 K et les résultats des expériences de vieillissement statique dans CdZnTe sont compatibles avec un effet de taille dominant pour les interactions Zndislocations. Les paramètres d'activation thermique ont été estimés dans les deux matériaux.

  18. Ammonothermal synthesis and characterization of Cs{sub 2}[Zn(NH{sub 2}){sub 4}

    Energy Technology Data Exchange (ETDEWEB)

    Richter, Theresia M.M.; Niewa, Rainer [Institut fuer Anorganische Chemie, Universitaet Stuttgart, Pfaffenwaldring 55, 70569, Stuttgart (Germany); Alt, Nicolas S.A.; Schluecker, Eberhard [Lehrstuhl fuer Prozessmaschinen und Anlagentechnik, Friedrich-Alexander-Universitaet Erlangen-Nuernberg, Cauerstrasse 4, 91058, Erlangen (Germany)

    2016-10-15

    Cs{sub 2}[Zn(NH{sub 2}){sub 4}] was synthesized under ammonothermal conditions (sc-NH{sub 3}, 523 K, 155 MPa) from CsNH{sub 2} and Zn. Growth of cm-sized crystals succeeded upon application of a temperature gradient. The crystal structure is based on the motif of a hexagonal closed packing of [Zn(NH{sub 2}){sub 4}]{sup 2-} ions with occurrence of no significant hydrogen bridges according to distances and vibrational spectroscopy. Cs{sup +} ions are located within octahedral and tetrahedral holes of the packing. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  19. Vibrational properties of ZnTe at high pressures

    International Nuclear Information System (INIS)

    Camacho, J.; Loa, I.; Syassen, K.; Cantarero, A.

    2002-01-01

    Raman spectra of ZnTe were measured under hydrostatic pressures up to 15 GPa at T=300 K. Results for the frequencies of first- and second-order Raman features of the zincblende phase (0-9.5 GPa) are used to set up a rigid-ion model of the phonon dispersion relations under pressure. Calculated phonon densities of states, mode Grueneisen parameters and the thermal expansion coefficient as a function of pressure are discussed. The effect of pressure on the widths and intensities of Raman spectral features is considered. Raman spectra of high-pressure phases of ZnTe are reported. These spectra indicate the possible existence of a new phase near 13 GPa, intermediate between the cinnabar and orthorhombic (Cmcm) phases of ZnTe. (author)

  20. Vibrational properties of ZnTe at high pressures

    Energy Technology Data Exchange (ETDEWEB)

    Camacho, J. [Max-Planck-Institut fuer Festkoerperforschung, Stuttgart (Germany) and Instituto de Ciencia de Materiales, Universidad de Valencia, Valencia (Spain)]. E-mail: Juana.Camacho@uv.es; Loa, I.; Syassen, K. [Max-Planck-Institut fuer Festkoerperforschung, Stuttgart (Germany); Cantarero, A. [Instituto de Ciencia de Materiales, Universidad de Valencia, Valencia (Spain)

    2002-02-04

    Raman spectra of ZnTe were measured under hydrostatic pressures up to 15 GPa at T=300 K. Results for the frequencies of first- and second-order Raman features of the zincblende phase (0-9.5 GPa) are used to set up a rigid-ion model of the phonon dispersion relations under pressure. Calculated phonon densities of states, mode Grueneisen parameters and the thermal expansion coefficient as a function of pressure are discussed. The effect of pressure on the widths and intensities of Raman spectral features is considered. Raman spectra of high-pressure phases of ZnTe are reported. These spectra indicate the possible existence of a new phase near 13 GPa, intermediate between the cinnabar and orthorhombic (Cmcm) phases of ZnTe. (author)

  1. Strong coupling and polariton lasing in Te based microcavities embedding (Cd,Zn)Te quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Rousset, J.-G., E-mail: j-g.rousset@fuw.edu.pl; Piętka, B.; Król, M.; Mirek, R.; Lekenta, K.; Szczytko, J.; Borysiuk, J.; Suffczyński, J.; Kazimierczuk, T.; Goryca, M.; Smoleński, T.; Kossacki, P.; Nawrocki, M.; Pacuski, W. [Institute of Experimental Physics, Faculty of Physics, University of Warsaw, ul. Pasteura 5, PL-02-093 Warszawa (Poland)

    2015-11-16

    We report on properties of an optical microcavity based on (Cd,Zn,Mg)Te layers and embedding (Cd,Zn)Te quantum wells. The key point of the structure design is the lattice matching of the whole structure to MgTe, which eliminates the internal strain and allows one to embed an arbitrary number of unstrained quantum wells in the microcavity. We evidence the strong light-matter coupling regime already for the structure containing a single quantum well. Embedding four unstrained quantum wells results in further enhancement of the exciton-photon coupling and the polariton lasing in the strong coupling regime.

  2. MSM optical detector on the basis of II-type ZnSe/ZnTe superlattice

    Energy Technology Data Exchange (ETDEWEB)

    Kuznetzov, P. I., E-mail: pik218@ire216.msk.su; Averin, S. V., E-mail: sva278@ire216.msk.su; Zhitov, V. A.; Zakharov, L. Yu.; Kotov, V. M. [Russian Academy of Sciences, Kotel’nikov Institute of Radioengineering and Electronics (Fryazino Branch) (Russian Federation)

    2017-02-15

    On the basis of a type-II ZnSe/ZnTe superlattice, a MSM (metal—semiconductor–metal) photodetector is fabricated and investigated. The detector features low dark currents and a high sensitivity. The spectral characteristic of the detector provides the possibility of the selective detection of three separate spectral portions of visible and near-infrared radiation.

  3. Leakage current measurements on pixelated CdZnTe detectors

    NARCIS (Netherlands)

    Dirks, B.; Blondel, C.; Daly, F.; Gevin, O.; Limousin, O.; Lugiez, F.

    2006-01-01

    In the field of the R&D of a new generation hard X-ray cameras for space applications we focus on the use of pixelated CdTe or CdZnTe semiconductor detectors. They are covered with 64 (0.9×0.9 mm2) or 256 (0.5×0.5 mm2) pixels, surrounded by a guard ring and operate in the energy ranging from several

  4. Fundamental studies of desulfurization processes: reaction of methanethiol on ZnO and Cs/ZnO

    Science.gov (United States)

    Dvorak, Joseph; Jirsak, Tomas; Rodriguez, José A.

    2001-05-01

    The reaction of methanethiol on ZnO and Cs promoted ZnO surfaces has been studied with synchrotron based photoemission and thermal desorption spectroscopy. On ZnO, methanethiol undergoes selective reaction to produce carbon monoxide (37-58%), methane (23-38%), formaldehyde (12-15%), ethane (1-11%), and a mixture of ethylene and acetylene (3-13%). At low temperatures (cleavage occurs to yield methyl intermediate and atomic S. Carbon is removed from the surface as gaseous products above 500 K, and atomic sulfur remains bound to the zinc sites of the surface. Submonolayer amounts of cesium do not have a significant promotional effect on C-S bond cleavage, whereas Cs multilayers are found to significantly lower the activation barrier for C-S bond cleavage. This study illustrates the chemistry associated with the desulfurization of thiols on a catalytically relevant oxide surface.

  5. Deposition of polycrystalline Cd{sub 1-x}Zn{sub x} Te films on ZnTe/graphite and graphite substrates by close-spaced sublimation

    Energy Technology Data Exchange (ETDEWEB)

    Okamoto, Tamotsu; Akiba, Sho; Takahashi, Kohei; Nagatsuka, Satsuki; Kanda, Yohei [Department of Electrical and Electronic Engineering, Kisarazu National College of Technology, 2-11-1 Kiyomidai-higashi, Kisarazu, Chiba 292-0041 (Japan); Tokuda, Satoshi; Kishihara, Hiroyuki; Sato, Toshiyuki [Technology Research Laboratory, Shimadzu Corporation, 3-9-4 Hikaridai, Seika-cho, Soraku-gun, Kyoto 619-0237 (Japan)

    2014-07-15

    The effects of a ZnTe layer on the deposition of a Cd{sub 1-x}Zn{sub x}Te (CZT) layer in the initial stage of the close-spaced sublimation (CSS) deposition were investigated. The deposition rate was almost constant in the initial stage of the CdTe deposition on the ZnTe/graphite substrates. However, the deposition rate within 1 minute was lower than that after 1 minute in the CdTe deposition on graphite substrates. This result suggests that nucleation of CdTe directly deposited on graphite substrate is difficult when compared to that with a ZnTe layer. Furthermore, the effects of CdCl{sub 2} and ZnTe additions to the CdTe sources in the CSS deposition were also investigated. Both the grain size and the intensity of donor-acceptor pair (DAP) emission in photoluminescence (PL) spectra were decreased by the effect of CdCl{sub 2} addition. Zn content in CZT films was controlled by the ZnTe ratio in the CdTe/ZnTe powder sources. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  6. Matrix-controlled morphology evolution of Te inclusions in CdZnTe single crystal

    International Nuclear Information System (INIS)

    He, Yihui; Jie, Wanqi; Xu, Yadong; Wang, Tao; Zha, Gangqiang; Yu, Pengfei; Zheng, Xin; Zhou, Yan; Liu, Hang

    2012-01-01

    The fine morphologies of microscale Te inclusions in CdZnTe single crystal were investigated to reveal their shape evolution. Such inclusions from crystal ingots with different post-growth cooling rates were analyzed using scanning electron microscopy after surface treatment. A tetrakaidecahedron model embodying {1 0 0} and {1 1 1} matrix facets was developed to interpret the form of the Te inclusions. An entire shape evolution process was also proposed where the final configuration of the Te inclusions was a tetrahedron comprising {1 1 1}B facets.

  7. Thermal annealing and ionic abrasion in ZnTe

    International Nuclear Information System (INIS)

    Bensahel, D.

    1975-01-01

    Thermal annealing of the ZnTe crystal is studied first in order to obtain information on the aspect of the penetration profile. Ionic abrasion is then investigated to find out whether it produces the same effects as ionic implantation, especially for luminescence [fr

  8. Gamma Spectroscopy with Pixellated CdZnTe Gamma Detectors

    International Nuclear Information System (INIS)

    Shor, A.; Mardor, I.; Eisen, Y.

    2002-01-01

    Pixellated CdZnTe detectors are good candidates for room temperature gamma detection requiring spectroscopic performance with imaging capabilities. The CdZnTe materials possess high resistivity and good electron charge transport properties. The poor charge transport for the holes inherent in the CdZnTe material can be circumvented by fabricating the electrodes in any one of a number of structures designed for unipolar charge detection[1]. Recent interest in efficient gamma detection at relatively higher gamma energies has imposed more stringent demands on the CdZnTe material and on detector design and optimization. We developed at Soreq a technique where signals from all pixels and from the common electrode are processed, and then a correction is applied for improving the energy resolution and the photopeak efficiency. For illumination with an un-collimated 133 Ba source , we obtain a combined detector energy resolution of 5.0 % FWHM for the 81 keV peak, and 1.5 % FWHM for the 356 keV peak. We discuss the importance of detector material with high electron (μτ) e for thick Pixellated detectors

  9. Accumulation, distribution and excretion of 134Cs and 65Zn by the green mussels (Perna Viridis)

    International Nuclear Information System (INIS)

    Chen Shunhua; Zhong Chuangguang; Yan Yuanyi; Zhao Xiaokui; Peng Yefang; Shi Qiong

    1997-10-01

    Two important radionuclides 134 Cs and 65 Zn were applied to study the accumulation, distribution and excretion of radioactive nuclides in organs and tissues of green mussel Perna Viridis. the results showed that the uptake rate of 134 Cs by green mussels was very low and the concentration factor (CF) for 134 Cs in the byssus approximated to 1. This CF value was lower than that of other tissues and organs of mussels, but its excretion rate was much higher than that of soft tissues. It was also found that the byssus of mussels had a special ability to accumulate 65 Zn. Concentration factor (CF) for 65 Zn in the byssus could reach as high as 900, which was much higher than that of any other tissues. However, its excretion rate was lower than that of other tissues and organs. The uptake rate of 65 Zn by soft tissues was markedly higher than that of 134 Cs. The mussels could also highly concentrate the low level 65 Zn even if specific activity of 65 Zn was very low in the environmental seawater. Results of radioactive trace experiments showed that the absorption of 134 Cs and 65 Zn by Perna Viridis was selective

  10. Characterisation of Redlen high-flux CdZnTe

    Science.gov (United States)

    Thomas, B.; Veale, M. C.; Wilson, M. D.; Seller, P.; Schneider, A.; Iniewski, K.

    2017-12-01

    CdZnTe is a promising material for the current generation of free electron laser light sources and future laser-driven γ-ray sources which require detectors capable of high flux imaging at X-ray and γ-ray energies (> 10 keV) . However, at high fluxes CdZnTe has been shown to polarise due to hole trapping, leading to poor performance. Novel Redlen CdZnTe material with improved hole transport properties has been designed for high flux applications. Small pixel CdZnTe detectors were fabricated by Redlen Technologies and flip-chip bonded to PIXIE ASICs. An XIA Digital Gamma Finder PIXIE-16 system was used to digitise each of the nine analogue signals with a timing resolution of 10 ns. Pulse shape analysis was used to extract the rise times and amplitude of signals. These were measured as a function of applied bias voltage and used to calculate the mobility (μ) and mobility-lifetime (μτ) of electrons and holes in the material for three identical detectors. The measured values of the transport properties of electrons in the high-flux-capable material was lower than previously reported for Redlen CdZnTe material (μeτe ~ 1 × 10-3 cm2V-1 and μe ~ 1000 cm2V-1s-1) while the hole transport properties were found to have improved (μhτh ~ 3 × 10-4 cm2V-1 and μh ~ 100 cm2V-1s-1).

  11. High performance p-i-n CdTe and CdZnTe detectors

    CERN Document Server

    Khusainov, A K; Ilves, A G; Morozov, V F; Pustovoit, A K; Arlt, R D

    1999-01-01

    A breakthrough in the performance of p-i-n CdTe and CdZnTe detectors is reported. The detector stability has been significantly improved, allowing their use in precise gamma and XRF applications. Detectors with energy resolution close to Si and Ge were produced operating with only -30--35 deg. C cooling (by a Peltier cooler of 15x15x10 mm size and a consumed power less than 5 W). Presently detectors with volume of up to 300 mm sup 3 are available. In terms of photoelectric effect efficiency it corresponds to HPGe detectors with volumes of about 1.5 cm sup 3. The possibilities of further improvement of CdTe and CdZnTe detector characteristics are discussed in this paper.

  12. Fluctuations in induced charge introduced by Te inclusions within CdZnTe radiation detectors

    International Nuclear Information System (INIS)

    Bale, Derek S.

    2010-01-01

    Recently, homogenization theory based on a multiple-scale perturbation of the electron transport equation has been used to derive a mathematical framework for modeling the excess charge lost to Te inclusions within radiation detectors based on semi-insulating cadmium zinc telluride (CdZnTe). In that theory, the heterogeneous material is mathematically replaced by a homogenized CdZnTe crystal whose effective electron attenuation length incorporates the additional uniform electron trapping caused by the inclusions. In this paper, the homogenization theory is extended to incorporate fluctuations in the induced charge (i.e., charge collection nonuniformities) introduced by the random position and size distributions of a noncorrelated population of small (i.e, <20 μm) Te inclusions. Analysis of the effective parameters derived within the homogenized framework is used to develop a probability distribution of effective electron attenuation lengths, and therefore effective mobility-lifetime products, as a function of both the position and size distribution of Te inclusions. Example distributions are detailed for the case of an exponential size distribution at various number densities. Further, it is demonstrated that the inclusion-induced material nonuniformities derived in this paper can be numerically sampled efficiently, making them applicable to Monte Carlo device simulation of realistic CdZnTe detectors. Simulated charge induction maps and pulse-height spectra are presented and compared to recently published measurements.

  13. New developments in clinical applications of CdTe and CdZnTe detectors

    International Nuclear Information System (INIS)

    Scheiber, C.

    1996-01-01

    This review about the medical applications of CdTe and CdZnTe is an update on the 1992 paper (1992). This new paper is legitimized by the recent progress which has been made in this field. First of all, the usefulness of a new material, i.e. CdZnTe, has been demonstrated. While the two materials are still being improved, it seems as yet too early to debate which of CdTe:Cl or CdZnTe will be the best choice. Historical applications span over the past 18 years, involving devices like miniature probes for per-operative scintigraphy or the monitoring of physiological functions and, closer to us, appliances dedicated to bone densitometry, and have been expanding as such devices have become commercially available, for many years now. Newly available microelectronic circuitry allows 2D-arrays to be built for digital quantitative X-ray (chest, dental..) and for high-resolution gamma cameras. The clinical demand is very high, especially in the field of nuclear medicine. Although there already exist clinical demonstrators, the future of such CdTe applications depends on further reduction in material and device mounting costs. New perspectives concern XCT applications, but the data resulting from research work are kept for restricted use within industrial R and D laboratories. (orig.)

  14. Micro-Raman scattering in ZnTe thin films

    International Nuclear Information System (INIS)

    Larramendi, E. M.; Gutierrez Z-B, K.; Hernandez, E.; Melo, O. de; Berth, G.; Wiedemeier, V.; Lischka, K; Schikora, D.; Woggon, U.

    2008-01-01

    In this work we present micro-raman measurements on ZnTe thin films grown by isothermal closed space sublimation on GaAs(001) substrates in helium and nitrogen atmospheres. Micro-raman spectra were recorded at room temperature using the backscattering geometry (illuminated spot: 3 μm2, 0.3 cm-1 of resolution and the line 532 nm of a DPSSL as power excitation). Up to four order LO-phonon replicas and no peak from TO phonon were observed in the micro-raman spectra as evidence of the epitaxial character and good quality of the films (the TO mode is forbidden according to the selection rules for backscattering along [001] of this heterostructure). The micro-raman spectra also revealed two features at low energy, which have been assigned incorrectly in recent works. We demonstrate that these raman peaks can be associated to the presence of few monolayers of crystalline tellurium or its oxides on the surface of the films. These features were not observed in micro-raman spectra of as grown ZnTe films terminated in a Zn surface. However, they were detected after a prolonged exposure of the samples to air. In addition, it is shown that this effect is accelerated under a high power laser excitation (laser annealing) as used in conventional micro-Raman measurement setups. Preliminary results that suggest the inclusion of nitrogen in ZnTe structure are also shown. (Full text)

  15. Cs2Te normal conducting photocathodes in the superconducting rf gun

    CERN Document Server

    Xiang, R; Buettig, H; Janssen, D; Justus, M; Lehnert, U; Michel, P; Murcek, P; Schamlott, A; Schneider, Ch; Schurig, R; Staufenbiel, F; Teichert, J

    2010-01-01

    The superconducting radio frequency photoinjector (SRF gun) is one of the latest applications of superconducting rf technology in the accelerator field. Since superconducting photocathodes with high quantum efficiency are yet unavailable, normal conducting cathode material is the main choice for SRF photoinjectors. However, the compatibility between the photocathode and the cavity is one of the challenges for this concept. Recently, a SRF gun with Cs2Te cathode has been successfully operated in Forschungszentrum Dresden-Rossendorf. In this paper, we will present the physical properties of Cs2Te photocathodes in the SC cavity, such as the quantum efficiency, the lifetime, the rejuvenation, the charge saturation, and the dark current.

  16. A thermodynamic stability of bulk and epitaxial CdHgTe, ZnHgTe and MnHgTe solid solutions

    International Nuclear Information System (INIS)

    Dejbuk, V.G.; Dremlyuzhenko, S.G.; Ostapov, S.Eh.

    2005-01-01

    A thermodynamics of Cd 1-x Hg x Te, Zn x Hg 1-x Te and Mg x Hg 1-x Te alloys has been investigated for a delta-lattice parameter model. The phase diagrams obtained show the stability of Cd 1-x Hg x Te, Zn x Hg 1-x Te in the whole range of compositions, alongside with a miscibility gap for Mn x Hg 1-x Te being of 0.35 x Hg 1-x Te/CdTe and Mn x Hg 1-x Te/Cd 0.96 Zn 0.04 Te epitaxial films result in lowering critical temperatures and narrowing the miscibility gap [ru

  17. Performance of prototype segmented CdZnTe arrays

    International Nuclear Information System (INIS)

    Parsons, A.; Palmer, D.M.; Kurczynski, P.; Barbier, L.; Barthelmy, S.; Bartlett, L.; Gehrels, N.; Krizmanic, J.; Stahle, C.M.; Tueller, J.; Teegarden, B.

    1998-01-01

    The Burst and All Sky Imaging Survey (BASIS) is a proposed mission to provide ∼3 arc second locations of approximately 90 Gamma-Ray Bursts (GRBs) per year. The BASIS coded aperture imaging system requires a segmented detector plane able to detect the interaction position of (10--150 keV) photons to less than 100 microm. To develop prototype detector arrays with such fine position resolution the authors have fabricated many 15 mm x 15 mm x 2 mm 100 microm pitch CdZnTe strip detectors. They have assembled these fine pitch CdZnTe strip detectors into prototype 2 x 2 and 6 x 6 element arrays read out by ASIC electronics. The assembly and electronics readout of the 6 x 6 flight prototype array will be discussed, and preliminary data illustrating the uniformity and efficiency of the array will be presented

  18. Elaboration and optical properties of type-II ZnTe on ZnSe heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Najjar, Rita, E-mail: rita.najjar@cea.f [CEA-CNRS group ' Nanophysique et semiconducteurs' , Institut NEEL-CNRS, BP166, 25 rue des martyrs, 38042 Grenoble Cedex 9 (France); Andre, Regis; Besombes, Lucien; Bougerol, Catherine; Tatarenko, Serge; Mariette, Henri [CEA-CNRS group ' Nanophysique et semiconducteurs' , Institut NEEL-CNRS, BP166, 25 rue des martyrs, 38042 Grenoble Cedex 9 (France)

    2009-11-25

    Special growth conditions are presented in this work, in order to produce ZnTe/ZnSe type-II quantum dots and preserve them during the capping stage. A detailed study emphasizes the high sensitivity of the sample structure to Se/Zn ratio as opposed to other growth parameters. It is shown that nominally identical samples can evolve into two-dimensional quantum well or quantum dot plane, depending on which element is in excess. Transmission electron microscopy, atomic force microscopy and optical characterizations evidence this phenomenon.

  19. Research into the electrical property variation of undoped CdTe and ZnTe crystals grown under Te-rich conditions

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Yadong, E-mail: xyd220@nwpu.edu.cn; Liu, Hang; He, Yihui; Yang, Rui; Luo, Lin; Jie, Wanqi

    2014-11-05

    Highlights: • Conductivity type and resistivity of undoped Te-rich ZnTe and CdTe are different. • Te{sub i} and V{sub Zn} as the dominant defects account for the p-type low resistivity ZnTe. • Te{sub Cd} as the principle defect leading to the light n-type high resistivity CdTe. • DAP and eA peaks dominate the luminescence with their intensities anti-correlated. - Abstract: Both undoped ZnTe and CdTe bulk single crystals are grown under Te-saturated conditions from the solution and melt, respectively. To give an insight into the variation of the electrical properties, the defects structures in both tellurides are discussed. According to the actual growth velocities and the entire cooling history, tellurium interstitials (Te{sub i}) and Zinc vacancies (V{sub Zn}) are proposed as the dominant grown-in defects, account for the low resistivity of p-type ZnTe. However, relatively high pulling rates and slow cooling-down processes result in tellurium anti-sites (Te{sub Cd}) as the principle grown-in defects, leading to the high resistivity of light n-type CdTe. Further low-temperature (8.6 K) photoluminescence spectra of both tellurides are obtained. The donor–acceptor pair (DAP) and recombination of free electron to neutral acceptor (eA) dominate the luminescence, however, with their intensities are anti-correlated. eA is superior to DAP in undoped Te-rich ZnTe, suggests a high concentration of Te{sub i} or V{sub Zn}. On the contrary, DAP is the principal emission for undoped Te-rich CdTe. In addition, V-line is clearly identified in undoped Te-rich ZnTe, which possibly associated with V{sub Zn} or close Frenkel pair V{sub Zn}–Zn{sub i}.

  20. Thermal conductivity of ZnTe investigated by molecular dynamics

    International Nuclear Information System (INIS)

    Wang Hanfu; Chu Weiguo

    2009-01-01

    The thermal conductivity of ZnTe with zinc-blende structure has been computed by equilibrium molecular dynamics method based on Green-Kubo formalism. A Tersoff's potential is adopted in the simulation to model the atomic interactions. The calculations are performed as a function of temperature up to 800 K. The calculated thermal conductivities are in agreement with the experimental values between 150 K and 300 K, while the results above the room temperature are comparable with the Slack's equation.

  1. Optical properties and surface morphology of ZnTe thin films prepared by multiple potential steps

    Energy Technology Data Exchange (ETDEWEB)

    Gromboni, Murilo F.; Lucas, Francisco W. S.; Mascaro, Lucia H., E-mail: lmascaro@ufscar.br [Universidade de Federal de Sao Carlos (LIEC/UFSCar), SP (Brazil). Departamento de Quimica. Lab. de Eletroquimica e Ceramica

    2014-03-15

    In this work, the ZnTe thin films were electrodeposited using potentiostatic steps, on Pt substrate. The effect of steps number, the deposition time for each element (Zn or Te) and layer order (Zn/Te or Te/Zn) in the morphology, composition, band gap energy and photocurrent was evaluated. Microanalysis data showed that the ratio Zn/Te ranged from 0.12 and 0.30 and the film was not stoichiometric. However, the band-gap value obtained from in all experimental conditions used in this work was 2.28 eV, indicating film growth of ZnTe. The samples with higher Zn showed higher photocurrent, which was of the order of 2.64 μA cm{sup -2} and dendritic morphology (author)

  2. Infrared Illuminated CdZnTe detectors with improved performance

    International Nuclear Information System (INIS)

    Ivanov, V.; Loutchanski, A.; Dorogov, P.; Khinoverov, S.

    2013-06-01

    It was found that IR illumination of a properly chosen wavelength and intensity can significantly improve spectrometric characteristics of CdZnTe quasi-hemispherical detectors [1]. Improving of the spectrometric characteristics is due to improvement of uniformity of charge collection by the detector volume. For operation at room temperature the optimal wavelength of IR illumination is about 940 nm, but for operation at lower temperature of -20 deg. C the optimal wavelengths of IR illumination is about 1050 nm. Infrared illumination can be performed using conventional low-power IR LEDs. Application of SMD LEDs allows produce miniature detection probes with IR illuminated CdZnTe detectors. We have fabricated and tested a variety of detection probes with CdZnTe quasi-hemispherical detectors from the smallest with volumes of 1-5 mm 3 to larger with volumes of 1.5 cm 3 and 4.0 cm 3 . The use of IR illumination significantly improves spectrometric characteristics of the probes operating at room temperature, especially probes with detectors of large volumes. The probe with the detector of 4 cm 3 without IR illumination had energy resolution of 24.2 keV at 662 keV and of 12.5 keV with IR illumination. (authors)

  3. Chemical interaction between (Cs-Te) doped fuels and cladding material under irradiation

    International Nuclear Information System (INIS)

    Delbrassine, A.; Flipot, A.J.

    1977-01-01

    Pins containing UO 2 -30 wt.% PuO 2 low density pellets and or caesium and or tellurium as doping elements have been irradiated for about 40 days in the BR 2 reactor. The effect of two Cs/Te ratios, namely 1.3 and 4, and a wide range of O/M ratios on the inner corrosion of the clad has been investigated. The influence of tellurium on the attack of the cladding has been pointed out. It may be responsible for the chromium and nickel depletion in the grain boundaries of the steal. The corrosion patterns and the thickness of the corroded layer could be different in the total length of a fuel pin. It seems therefore necessary to measure the effective Cs/Te ratio associated with the local corrosion layers. This local Cs/Te ratio should be more useful than the initial mean Cs/Te ratio in a pin for understanding the corrosion phenomena. (author)

  4. A novel intermediate layer for Au/CdZnTe/FTO photoconductive structure

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Yuelu; Wang, Linjun, E-mail: ljwang@shu.edu.cn; Xu, Run; Huang, Jian; Tao, Jun; Meng, Hua; Zhang, Jijun; Min, Jiahua

    2016-12-01

    Highlights: • Graphene layer was spin-coated on CdZnTe to form Au/graphene/CdZnTe/FTO structure. • Graphene layer can significantly improve the contact property of Au/CdZnTe. • Graphene layer can obviously enhance UV photo-response of CdZnTe. • Graphene is a potential buffer material for CdZnTe based high-energy detectors. - Abstract: In this work, graphene is tried to use to improve the performance of polycrystalline CdZnTe high-energy radiation and photon detectors. A graphene intermediate layer is prepared by spin-coating process on the surface of polycrystalline CdZnTe film, which forms a photoconductive Au/graphene/CdZnTe/FTO structure. XRD, Raman, photoelectric response and other characterisation methods are adopted to investigate the effect of graphene layer on the electrical characteristics and UV photo-response performance of CdZnTe photoconductive structure. It is demonstrated that graphene layer can significantly improve the contact property of Au/CdZnTe structure, and obviously enhance its UV photo-response and the UV sensitivity increased with one order of magnitude.

  5. Transfer factors of radionuclides 137Cs and 65Zn from soil to pearl millet and sorghum

    International Nuclear Information System (INIS)

    Sachdev, P.; Sachdev, M.S.; Deb, D.L.

    1996-01-01

    The soil to plant transfer factors (TF) of 137 Cs and 65 Zn were determined for two crops, sorghum and pearl millet, under irrigated conditions in greenhouse and under rain fed conditions in field. In the greenhouse experiment, the accumulation of 137 Cs was almost doubled when the soil contamination level was doubled. Under field conditions, 137 Cs concentration in both pearl millet and sorghum grains as well as straw was nearly four times more at 148 kBq Kg -1 level of soil contamination as compared to lower level of 74 kBq kg -1 soil. The TF values for 65 Zn determined under greenhouse conditions for both the crops were nearly a hundred-fold higher as compared to 137 Cs. (author). 7 refs., 2 tabs

  6. Surface passivation of HgCdTe by CdZnTe and its characteristics

    Science.gov (United States)

    Lee, T. S.; Choi, K. K.; Jeoung, Y. T.; Kim, H. K.; Kim, J. M.; Kim, Y. H.; Chang, J. M.; Song, W. S.; Kim, S. U.; Park, M. J.; Lee, S. D.

    1997-06-01

    In this paper, we report the results of capacitance-voltage measurements conducted on several metal-insulator semiconductor (MIS) capacitors in which HgCdTe surfaces are treated with various surface etching and oxidation processes. CdZnTe passivation layers were deposited on HgCdTe surfaces by thermal evaporation after the surfaces were etched with 0.5-2.0% bromine in methanol solution, or thin oxide layers (tox ˜ few ten Å) were grown on the surfaces, in order to investigate effects of the surface treatments on the electrical properties of the surfaces, as determined from capacitance-voltage (C-V) measurements at 80K and 1 MHz. A negative flat band voltage has been observed for MIS capacitors fabricated after etching of HgCdTe surfaces with bromine in methanol solutions, which is reported to make the surface Te-rich. It is inferred that residual Te on the surface is a positive charge, Te4+. C-V characteristics for MIS capacitors fabricated on oxide surfaces grown by air-exposure and electrolytic process have shown large hysteresis effects, from which it is inferred that imperfect and electrically active oxide compounds and HgTe particles near the surface become slow interface states.

  7. Cumulative effects of Te precipitates in CdZnTe radiation detectors

    International Nuclear Information System (INIS)

    Bolotnikov, A.E.; Camarda, G.S.; Carini, G.A.; Cui, Y.; Li, L.; James, R.B.

    2007-01-01

    High-quality radiation detector-grade CdZnTe material is free from large-scale defects, such as grain boundaries, twins, and large Te or Cd inclusions (>50 μm), although it usually contains high concentrations of uniformly distributed Te inclusions and precipitates, typically of ∼20-μm-diameter size or smaller. We address the effects of the small-size Te precipitates on charge collection in CZT detectors, the significance of which is not yet well characterized. The strong correlation that we earlier found between the high-resolution X-ray maps and IR images proved that even small Te precipitates can trap substantial fractions of charge from the electron cloud. In this work, we modeled the transport of an electron cloud across idealized CZT devices containing Te precipitates to demonstrate that their cumulative effect can explain the degradation of energy resolution and the detection efficiency losses observed in actual CZT devices. Due to lack of experimental data on how the Te precipitates interact with an electron cloud, we developed a simplified (phenomenological) model based on the geometrical aspects of the problem. Despite its simplicity, the model correctly reproduced many experimental facts and gave quantitative predictions on the extent to which the presence of Te precipitates and inclusions can be tolerated. The broadening of the electron cloud due to repulsion and diffusion is at the core of the problem, making even low concentrations of small precipitates important in the device's performance

  8. Influence of gamma-irradiation on the electroluminescence of ZnSe:Zn,Te crystals

    International Nuclear Information System (INIS)

    Elmuratova, D.B.; Ibragimova, E.M.

    2007-01-01

    Effect of 60 Co gamma-radiation at the dose rate of 10 Gy/s on electroluminescence (El)Zn Se crystals with 0.5 weight % Te treated in zinc vapor was studied for possible manufacturing of light emitting structures. Broad El band with the maximum at 610 nm is excited in the origin samples at a voltage above 15 V. After irradiation to the high dose of 10 6 Gy the El intensity grows by ∼2.5 times in the direct polarity at 24 V. The observed El of Zn Se:Zn,Te single crystals is assumed to be caused by the charge carrier recombination at the interstitial zinc centers by the excitation mechanism of a barrier sub breakdown type (authors)

  9. Piezoelectric effect in CdTe/CdMnTe and CdTe/CdZnTe quantum wells

    International Nuclear Information System (INIS)

    Andre, Regis

    1994-01-01

    Materials with zinc-blende type structure are piezoelectric: any strain along a polar axis generates an electrical polarisation. Strained quantum wells of cubic II-VI or III-V semiconductors, grown along [111] or [112] axis, exhibit a strong built-in piezo-electric field (100 kV/cm for 1% strains). Such structures are very promising for applications to optical modulation, but it is necessary to study first the physical properties of piezoelectric heterostructures before they can be used in optical devices. For this purpose, we have performed an optical study of strained CdTe/CdMnTe or CdTe/CdZnTe quantum wells coherently grown by molecular beam epitaxy on [111] or [112] oriented substrates. Effects of piezoelectric field on optical and electronic properties of quantum wells have been analyzed in terms of the envelop function model, taking into account the effects of biaxial strains for [hhk] growth axis. Moreover, we have proposed an original way of measuring piezoelectric field in strained quantum wells, and we have used this method to show that CdTe exhibits strong non-linearities for piezoelectric field versus strain. This effect has never been mentioned before. We have also performed measurements of the piezoelectric coefficient e14 under high hydrostatic pressure inducing strains up to 2%, which shows that part of the non-linear effect is a volume effect. We have also studied the effects of the piezoelectric field on excitons in quantum wells. The binding energy decreases slightly when the electric field increases, but the oscillator strength, for the fundamental transition, decreases dramatically with the overlap of the envelope wavefunctions of electrons and holes. We have performed a modelization of an exciton in a piezoelectric quantum well using two variational parameters. This model provides an accurate calculation of excitonic absorption. Our experimental and theoretical results are in very good agreement, without any fitting parameters, for a large

  10. Correction of diagnostic x-ray spectra measured with CdTe and CdZnTe detectors

    Energy Technology Data Exchange (ETDEWEB)

    Matsumoto, M [Osaka Univ., Suita (Japan). Medical School; Kanamori, H; Toragaito, T; Taniguchi, A

    1996-07-01

    We modified the formula of stripping procedure presented by E. Di. Castor et al. We added the Compton scattering and separated K{sub {alpha}} radiation of Cd and Te (23 and 27keV, respectively). Using the new stripping procedure diagnostic x-ray spectra (object 4mm-Al) of tube voltage 50kV to 100kV for CdTe and CdZnTe detectors are corrected with comparison of those spectra for the Ge detector. The corrected spectra for CdTe and CdZnTe detectors coincide with those for Ge detector at lower tube voltage than 70kV. But the corrected spectra at higher tube voltage than 70kV do not coincide with those for Ge detector. The reason is incomplete correction for full energy peak efficiencies of real CdTe and CdZnTe detectors. (J.P.N.)

  11. Leakage current measurements on pixelated CdZnTe detectors

    International Nuclear Information System (INIS)

    Dirks, B.P.F.; Blondel, C.; Daly, F.; Gevin, O.; Limousin, O.; Lugiez, F.

    2006-01-01

    In the field of the R and D of a new generation hard X-ray cameras for space applications we focus on the use of pixelated CdTe or CdZnTe semiconductor detectors. They are covered with 64 (0.9x0.9 mm 2 ) or 256 (0.5x0.5 mm 2 ) pixels, surrounded by a guard ring and operate in the energy ranging from several keV to 1 MeV, at temperatures between -20 and +20 o C. A critical parameter in the characterisation of these detectors is the leakage current per pixel under polarisation (∼50-500 V/mm). In operation mode each pixel will be read-out by an integrated spectroscopy channel of the multi-channel IDeF-X ASIC currently developed in our lab. The design and functionality of the ASIC depends directly on the direction and value of the current. A dedicated and highly insulating electronics circuit is designed to automatically measure the current in each individual pixel, which is in the order of tens of pico-amperes. Leakage current maps of different CdZnTe detectors of 2 and 6 mm thick and at various temperatures are presented and discussed. Defect density diagnostics have been performed by calculation of the activation energy of the material

  12. Fast Neutron Detection Using Pixelated CdZnTe Spectrometers

    Science.gov (United States)

    Streicher, Michael; Goodman, David; Zhu, Yuefeng; Brown, Steven; Kiff, Scott; He, Zhong

    2017-07-01

    Fast neutrons are an important signature of special nuclear materials (SNMs). They have a low natural background rate and readily penetrate high atomic number materials that easily shield gamma-ray signatures. Therefore, they provide a complementary signal to gamma rays for detecting shielded SNM. Scattering kinematics dictate that a large nucleus (such as Cd or Te) will recoil with small kinetic energy after an elastic collision with a fast neutron. Charge carrier recombination and quenching further reduce the recorded energy deposited. Thus, the energy threshold of CdZnTe detectors must be very low in order to sense the small signals from these recoils. In this paper, the threshold was reduced to less than 5 keVee to demonstrate that the 5.9-keV X-ray line from 55Fe could be separated from electronic noise. Elastic scattering neutron interactions were observed as small energy depositions (less than 20 keVee) using digitally sampled pulse waveforms from pixelated CdZnTe detectors. Characteristic gamma-ray lines from inelastic neutron scattering were also observed.

  13. Study of gamma radiation shielding properties of ZnO-TeO_2 glasses

    International Nuclear Information System (INIS)

    Issa, Shama A.M.; Sayyed, M.I.; Kurudirek, Murat

    2017-01-01

    Mass attenuation coefficient (μm), half value layer (HVL) and mean free path (MFP) for xZnO-(100-x)TeO_2, where x=10, 15, 20, 25, 30, 35 and 40 mol%, have been measured for 0.662, 1.173 and 1.33 MeV photons emitted from "1"3"7Cs and "6"0Co using a 3 x 3 inch NaI (Tl) detector. Some relevant parameters such as effective atomic numbers (Z_e_f_f) and electron densities (Nel) of glass samples have been also calculated in the photon energy range of 0.015-15 MeV. Moreover, gamma-ray energy absorption buildup factor (EABF) and exposure buildup factor (EBF) were estimated using a five-parameter Geometric Progression (GP) fitting approximation, for penetration depths up to 40 MFP and in the energy range 0.015-15 MeV. The measured mass attenuation coefficients were found to agree satisfactorily with the theoretical values obtained through WinXcom. Effective atomic numbers (Z_e_f_f) and electron densities (N_e_l) were found to be the highest for 40ZnO-60TeO_2 glass in the energy range 0.04-0.2 MeV. The 10ZnO-90TeO_2 glass sample has lower values of gamma-ray EBFs in the intermediate energy region. The reported new data on radiation shielding characteristics of zinc tellurite glasses should be beneficial from the point of proper gamma shield designs when intended to be used as radiation shields. (author)

  14. Effect of Te atmosphere annealing on the properties of CdZnTe single crystals

    International Nuclear Information System (INIS)

    Yu Pengfei; Jie Wanqi; Wang Tao

    2011-01-01

    Low-resistivity CdZnTe:In (CZT:In) single crystals were annealed under Te atmosphere according to the behaviors of deep-donor Te antisite. The results indicated that the star-like Cd inclusions were completely eliminated after 120 h annealing. Meanwhile, the resistivity is greatly enhanced. The resistivity of the slice annealed after 240 h was achieved as high as 1.8x10 11 Ω cm, five orders of magnitude higher than that of as-grown slice. It suggested that the deep-donor level Te antisites were successfully introduced to pin the Fermi level at the mid band-gap position. The IR transmittances of the slices were also improved, which increased as the annealing time increased. PL measurement revealed that the (D 0 ,X) peak representing high quality of CZT crystal appeared. It can be concluded that the quality of CZT crystals is obviously improved after annealing under Te atmosphere. - Highlights: → High resistivity is due to deep-donor level Te Cd . → The resistivity achieved was as high as 1.8x10 11 Ω cm. → Star-like inclusions are Cd inclusions. → (D 0 ,X) peak represents the improvement of the crystal quality.

  15. Compensation scheme for online neutron detection using a Gd-covered CdZnTe sensor

    Energy Technology Data Exchange (ETDEWEB)

    Dumazert, Jonathan, E-mail: jonathan.dumazert@cea.fr; Coulon, Romain; Kondrasovs, Vladimir; Boudergui, Karim

    2017-06-11

    The development of portable and personal neutron dosimeters requires compact and efficient radiation sensors. Gd-157, Gd-155 and Cd-113 nuclei present the highest cross-sections for thermal neutron capture among natural isotopes. In order to allow for the exploitation of the low and medium-energy radiative signature of the said captures, the contribution of gamma background radiation, falling into the same energy range, needs to be cancelled out. This paper introduces a thermal neutron detector based on a twin-dense semiconductor scheme. The neutron-sensitive channel takes the form of a Gd-covered CdZnTe crystal, a high density and effective atomic number detection medium. The background compensation will be carried out by means of an identical CdZnTe sensor with a Tb cover. The setting of a hypothesis test aims at discriminating the signal generated by the signature of thermal neutron captures in Gd from statistical fluctuations over the compensation of both independent channels. The measurement campaign conducted with an integrated single-channel chain and two metal Gd and Tb covers, under Cs-137 and Cf-252 irradiations, provides first quantitative results on gamma-rejection and neutron sensitivity. The described study of concept gives grounds for a portable, online-compatible device, operable in conventional to controlled environments.

  16. Excitonic surface polaritons in luminescence from ZnTe crystals

    International Nuclear Information System (INIS)

    Brodin, M.S.; Bandura, V.M.; Matsko, M.G.

    1984-01-01

    The form and structure of reflection and exciton-polariton luminescence spectra of ZnTe crystals are studied in the region of the ground (n = 1) exciton state. The longitudinal-transverse splitting magnitude ΔE/sub LT/ is determined from the shape of the reflection spectra. A detected doublet structure of an emission band from the lower polariton branch is associated with the k-linear term. The evolution of bulk and surface polariton luminescence spectra versus temperature and wavelength of the exciting light is investigated. (author)

  17. Excitonic surface polaritons in luminescence from ZnTe crystals

    Energy Technology Data Exchange (ETDEWEB)

    Brodin, M.S.; Bandura, V.M.; Matsko, M.G. (AN Ukrainskoj SSR, Kiev. Inst. Fiziki)

    1984-10-01

    The form and structure of reflection and exciton-polariton luminescence spectra of ZnTe crystals are studied in the region of the ground (n = 1) exciton state. The longitudinal-transverse splitting magnitude ..delta..E/sub LT/ is determined from the shape of the reflection spectra. A detected doublet structure of an emission band from the lower polariton branch is associated with the k-linear term. The evolution of bulk and surface polariton luminescence spectra versus temperature and wavelength of the exciting light is investigated.

  18. Growth and Characterization of ZnTe Crystal

    International Nuclear Information System (INIS)

    Nann Thazin

    2011-12-01

    High quality ZnTe crystals have been synthesized by vapor Transport method. The grown crystals were p-type. The concentration and mobility were 2.5 x 10 16 cm-3 and 23 cm2/Vs at 300K, according to Hall effect measurements. Surface morphology of the crystal was investigated by scanning electron microscope (SEM). Crystal orientation and lattice parameters of the crystals were also analysed by XRD. From X-ray diffraction studies the structure of the grown crystals were found to be zinc-blende. The crystal emitted light in the visible range at room temperature.

  19. Determination of valence band parameters in ZnTe

    Energy Technology Data Exchange (ETDEWEB)

    Froehlich, D.; Noethe, A.; Reimann, K. (Duesseldorf Univ. (Germany, F.R.). Physikalisches Inst. - Lehrstuhl 2)

    1984-10-01

    The fine structure of the 2P exciton in ZnTe is studied by two-photon-absorption. The energy splitting into four states, caused by the envelope-hole coupling, allows the determination of the Luttinger parameters ..gamma../sub 2/ and ..gamma../sub 3/, which describe the complex valence band. ..gamma../sub 2/ = 0.8 and ..gamma../sub 3/ = 1.7 are obtained. These values are compared to results of other experiments mainly on 1S excitons.

  20. ZnTe Amorphous Semiconductor Nanowires Array Electrodeposited into Polycarbonate Membrane Thin Films

    International Nuclear Information System (INIS)

    Ohgai, T; Ikeda, T; Ohta, J

    2013-01-01

    ZnTe amorphous semiconductor nanowires array was electrodeposited into the nanochannels of ion-track etched polycarbonate membrane thin films from acidic aqueous solution at 313 K. ZnTe electrodeposits with Zn-rich composition was obtained over the wide range of cathode potential from −0.8 V to −1.1 V and the growth rate of ZnTe amorphous nanowires was around 3 nm.sec −1 at the cathode potential of −0.8 V. Cylindrical shape of the nanowires was precisely transferred from the nanochannels and the aspect ratio reached up to ca. 40. ZnTe amorphous phase electrodeposited at 313 K was crystallized by annealing at 683 K and the band gap energy of ZnTe crystalline phase reached up to ca. 2.13 eV.

  1. Cs_{2}Te normal conducting photocathodes in the superconducting rf gun

    Directory of Open Access Journals (Sweden)

    R. Xiang

    2010-04-01

    Full Text Available The superconducting radio frequency photoinjector (SRF gun is one of the latest applications of superconducting rf technology in the accelerator field. Since superconducting photocathodes with high quantum efficiency are yet unavailable, normal conducting cathode material is the main choice for SRF photoinjectors. However, the compatibility between the photocathode and the cavity is one of the challenges for this concept. Recently, a SRF gun with Cs_{2}Te cathode has been successfully operated in Forschungszentrum Dresden-Rossendorf. In this paper, we will present the physical properties of Cs_{2}Te photocathodes in the SC cavity, such as the quantum efficiency, the lifetime, the rejuvenation, the charge saturation, and the dark current.

  2. Vapour growth of Cd(Zn)Te columnar nanopixels into porous alumina

    International Nuclear Information System (INIS)

    Sochinskii, N.V.; Abellan, M.; Martin Gonzalez, M.; Saucedo, E.; Dieguez, E.; Briones, F.

    2006-01-01

    The vapour phase growth (VPG) of CdTe and Cd 1- x Zn x Te was performed in order to investigate the formation of Cd(Zn)Te columnar nanostructures, which could serve as a basis for micropixels usable for further development of X- and gamma-ray high-resolution imaging devices. The possibility to form the 'Cd(Zn)Te-in-porous alumina' nanostructures by VPG has been demonstrated. The Cd(Zn)Te crystals integrated into nanoporous alumina have shown to have photoluminescence properties compatible with those of the bulk crystals and planar epitaxial layers. Further investigations are going on to improve the structural quality of Cd(Zn)Te nanocrystals

  3. Antibacterial and wound healing properties of chitosan/poly(vinyl alcohol)/zinc oxide beads (CS/PVA/ZnO).

    Science.gov (United States)

    Gutha, Yuvaraja; Pathak, Janak L; Zhang, Weijiang; Zhang, Yaping; Jiao, Xu

    2017-10-01

    Treatment against bacterial infection is crucial for wound healing. Development of cost-effective antibacterial agent with wound healing properties is still in high demand. In this study we aimed to design chitosan/poly(vinyl alcohol)/zinc oxide (CS/PVA/ZnO) beads as novel antibacterial agent with wound healing properties. CS/PVA/ZnO beads were synthesized, and characterized by using XRD, FTIR, SEM, and TEM analysis. Pure chitosan exhibits two peaks at 2θ=10 and 20 and the CS/PVA polymer matrix exhibit the peaks at 2θ=19.7° and another of low intensity at 2θ=11.5°. Pure ZnO shows the characteristic peaks at (100), (002), (101), (102), (110), (103), (200), and (112) that were in good agreement with wurtzite ore having hexagonal lattice structure. The antibacterial activity of CS/PVA/ZnO against Escherichia coli, and Staphylococcus aureus were evaluated with the zone of inhibition method. Antibacterial activity of CS/PVA/ZnO was higher than that of chitosan (CS) and poly(vinyl alcohol (PVA). Hemocompatibility and biocompatibility of CS/PVA/ZnO were tested in in vitro. Wound healing properties of CS/PVA/ZnO were tested in mice skin wound. CS/PVA/ZnO showed strong antimicrobial, wound healing effect, hemocompatibility and biocompatibility. Hence the results strongly support the possibility of using this novel CS/PVA/ZnO material for the anti bacterial and wound healing application. Copyright © 2017 Elsevier B.V. All rights reserved.

  4. ADVANCED READOUT ELECTRONICS FOR MULTIELEMENT CdZnTe SENSORS

    International Nuclear Information System (INIS)

    DE GERONIMO, G.; O CONNOR, P.; KANDASAMY, A.; GROSHOLZ, J.

    2002-01-01

    A generation of high performance front-end and read-out ASICs customized for highly segmented CdZnTe sensors is presented. The ASICs, developed in a multi-year effort at Brookhaven National Laboratory, are targeted to a wide range of applications including medical, safeguards/security, industrial, research, and spectroscopy. The front-end multichannel ASICs provide high accuracy low noise preamplification and filtering of signals, with versions for small and large area CdZnTe elements. They implement a high order unipolar or bipolar shaper, an innovative low noise continuous reset system with self-adapting capability to the wide range of detector leakage currents, a new system for stabilizing the output baseline and high output driving capability. The general-purpose versions include programmable gain and peaking time. The read-out multichannel ASICs provide fully data driven high accuracy amplitude and time measurements, multiplexing and time domain derandomization of the shaped pulses. They implement a fast arbitration scheme and an array of innovative two-phase offset-free rail-to-rail analog peak detectors for buffering and absorption of input rate fluctuations, thus greatly relaxing the rate requirement on the external ADC. Pulse amplitude, hit timing, pulse risetime, and channel address per processed pulse are available at the output in correspondence of an external readout request. Prototype chips have been fabricated in 0.5 and 0.35 (micro)m CMOS and tested. Design concepts and experimental results are discussed

  5. Purification of CdZnTe by electromigration

    International Nuclear Information System (INIS)

    Kim, K.; Kim, Sangsu; Hong, Jinki; Lee, Jinseo; Hong, Taekwon; Bolotnikov, A. E.; Camarda, G. S.; James, R. B.

    2015-01-01

    Electro-migration of ionized/electrically active impurities in CdZnTe (CZT) was successfully demonstrated at elevated temperature with an electric field of 20 V/mm. Copper, which exists in positively charged states, electro-migrated at a speed of 15 μm/h in an electric field of 20 V/mm. A notable variation in impurity concentration along the growth direction with the segregation tendency of the impurities was observed in an electro-migrated CZT boule. Notably, both Ga and Fe, which exist in positively charged states, exhibited the opposite distribution to that of their segregation tendency in Cd(Zn)Te. A CZT detector fabricated from the middle portion of the electro-migrated CZT boule showed an improved mobility-lifetime product of 0.91 × 10 −2  cm 2 /V, compared with that of 1.4 × 10 −3  cm 2 /V, observed in an as-grown (non-electro-migrated) CZT detector. The optimum radiation detector material would have minimum concentration of deep traps required for compensation

  6. Purification of CdZnTe by electromigration

    Science.gov (United States)

    Kim, K.; Kim, Sangsu; Hong, Jinki; Lee, Jinseo; Hong, Taekwon; Bolotnikov, A. E.; Camarda, G. S.; James, R. B.

    2015-04-01

    Electro-migration of ionized/electrically active impurities in CdZnTe (CZT) was successfully demonstrated at elevated temperature with an electric field of 20 V/mm. Copper, which exists in positively charged states, electro-migrated at a speed of 15 μm/h in an electric field of 20 V/mm. A notable variation in impurity concentration along the growth direction with the segregation tendency of the impurities was observed in an electro-migrated CZT boule. Notably, both Ga and Fe, which exist in positively charged states, exhibited the opposite distribution to that of their segregation tendency in Cd(Zn)Te. A CZT detector fabricated from the middle portion of the electro-migrated CZT boule showed an improved mobility-lifetime product of 0.91 × 10-2 cm2/V, compared with that of 1.4 × 10-3 cm2/V, observed in an as-grown (non-electro-migrated) CZT detector. The optimum radiation detector material would have minimum concentration of deep traps required for compensation.

  7. Performance updating of CdZnTe strip-drift detectors

    DEFF Research Database (Denmark)

    Shorohov, M.; Tsirkunova, I.; Loupilov, A.

    2007-01-01

    59.6 and 662 keV correspondingly. Recently, significant progress was done in CdZnTe crystals growth technology. In the present paper we present preliminary result of performance updating of CdZnTe strip-drift detectors based on crystal of 10 x 10 x 6 mm 3 produced by Yinnel Tech company. Results...

  8. Syntheses, crystal structures and characterizations of BaZn(SeO3)2 and BaZn(TeO3)Cl2

    International Nuclear Information System (INIS)

    Jiang Hailong; Feng Meiling; Mao Jianggao

    2006-01-01

    Two new barium zinc selenite and tellurite, namely, BaZn(SeO 3 ) 2 and BaZn(TeO 3 )Cl 2 , have been synthesized by the solid state reaction. The structure of BaZn(SeO 3 ) 2 features double chains of [Zn(SeO 3 ) 2 ] 2- anions composed of four- and eight-member rings which are alternatively along a-axis. The double chains of [Zn 2 (TeO 3 ) 2 Cl 3 ] 3- anions in BaZn(TeO 3 )Cl 2 are formed by Zn 3 Te 3 rings in which each tellurite group connects with three ZnO 3 Cl tetrahedra. BaZn(SeO 3 ) 2 and BaZn(TeO 3 )Cl 2 are wide bandgap semiconductors based on optical diffuse reflectance spectrum measurements. -- Graphical abstract: Two new barium zinc selenite and tellurite, namely, BaZn(SeO 3 ) 2 and BaZn(TeO 3 )Cl 2 , have been synthesized by solid state reaction. The structure of BaZn(SeO 3 ) 2 features 1D double chains of [Zn(SeO 3 ) 2 ] 2- anions composed of four- and eight-member rings which are alternatively along a-axis. The 1D double chains of [Zn 2 (TeO 3 ) 2 Cl 3 ] 3- anions in BaZn(TeO 3 )Cl 2 are formed by Zn 3 Te 3 rings in which each tellurite group connects with one ZnO 3 Cl and two ZnO 2 Cl 2 tetrahedra. BaZn(SeO 3 ) 2 and BaZn(TeO 3 )Cl 2 are wide bandgap semiconductors based on optical diffuse reflectance spectrum measurements

  9. CsAg{sub 5}Te{sub 3}: a new metal-rich telluride with a unique tunnel structure

    Energy Technology Data Exchange (ETDEWEB)

    Jing, Li [Rutgers Univ., Camden, NJ (United States). Dept. of Chem.; Hongyou, Guo [Rutgers Univ., Camden, NJ (United States). Dept. of Chem.; Xiang, Zhang [Michigan State Univ., East Lansing, MI (United States). Dept. of Chemistry; Kanatzidis, M G [Michigan State Univ., East Lansing, MI (United States). Dept. of Chemistry

    1995-02-15

    The synthesis and structure of a new ternary silver telluride, CsAg{sub 5}Te{sub 3}, is described. The compound was prepared from a Cs{sub 2}Te-CaTe-Te flux but it can also be prepared from a direct combination of Cs{sub 2}Te and Ag{sub 2}Te under vacuum at 600 C. The crystal data for CsAg{sub 5}Te{sub 3} at 20 C (Mo K{alpha} radiation) are as follows: a=14.672(2) A and c=4.601(3) A; V=990.5(8) A{sup 3}; Z=4; D{sub calc}=7.075 g cm{sup -3}; space group, P4{sub 2} /mnm (No. 136); 2{theta}{sub max}=50 ; number of independent data collected, 572; number of data observed with I>3{sigma}(I), 267; number of variables, 32; {mu}=218.51 cm{sup -1}; extinction coefficient, 0.585x10{sup -7}; final R=0.040; R{sub w}=0.046; goodness of fit, 1.42. The compound features a new structure type with Cs{sup +}-filled, relatively large tunnels running through the lattice. The material is a semiconductor with a band gap of about 0.65 eV. ((orig.))

  10. Research on Cu2ZnSnTe4 crystals and heterojunctions based on such crystals

    Directory of Open Access Journals (Sweden)

    Kovaliuk T. T.

    2015-12-01

    Full Text Available The paper reports on the results of the studies of magnetic, kinetic and optical properties of Cu2ZnSnTe4 crystals. The Cu2ZnSnTe4 crystals showed diamagnetic properties (the magnetic susceptibility almost independent of the magnetic field and temperature. The Cu2ZnSnTe4 crystals possessed p-type of conductivity and the Hall coefficient was independent on temperature. The temperature dependence of the electrical conductivity of the Cu2ZnSnTe4 crystal shows metallic character, i. e. decreases with the increase of temperature, that is caused by the lower charge carrier mobility at higher temperature. Thermoelectric power of the samples ispositive that also indicates on the prevalence of p-type conductivity. Heterojunctions n-TiN/p-Cu2ZnSnTe4, n-TiO2/p-Cu2ZnSnTe4 and n-MoO/p-Cu2ZnSnTe4 were fabricated by the reactive magnetron sputtering of TiN, TiO2 and MoOx thin films, respectively, onto the substrates made of the Cu2ZnSnTe4 crystals. The dominating current transport mechanisms in the n-TiN/p-Cu2ZnSnTe4 and n-TiO2/p-Cu2ZnSnTe4 heterojunctions were established to be the tunnel-recombination mechanism at forward bias and tunneling at reverse bias.

  11. Performance optimization of CdTe and CdZnTe detectors for γ-spectrometry

    International Nuclear Information System (INIS)

    Montemont, Guillaume

    2000-01-01

    This study deals with room-temperature gamma spectrometry with CdTe and CdZnTe semiconductor detectors. The aim was the improvement of energy resolution and detection efficiency. Some different phenomena have been investigated. Electronic noise knowledge has enabled us to optimize the design of filtering. Charge transport induces signal shape uncertainty and the processing circuit has been adapted in order to account for these variations. Study and simulation of electrical current induction process has permitted the development of a new Frisch-grid based detection structure. We have reached 3% energy resolutions at 122 keV without detection efficiency loss. Finally, the remaining limits of detector performances have been estimated by focusing on gamma interaction phenomena and material non-uniformity problems. (author) [fr

  12. Boron-doped MnTe semiconductor-sensitized ZnO solar cells

    Indian Academy of Sciences (India)

    Administrator

    The B-doped MnTe semiconductor was grown on ZnO using two stages of the ... nanoparticles (NPs), i.e. MnTe and MnTe2 were observed with a diameter range of approximately ..... Kongkanand A, Tvrdy K, Takechi K, Kuno M and Kamat P.

  13. Predictive capabilities of the specific activity hypothesis for Cs and Zn in freshwater systems

    International Nuclear Information System (INIS)

    Seelye, J.G.

    1975-01-01

    Predictions of radioisotope concentrations in components of aquatic systems have been attempted using the specific activity concept, an approach that seems theoretically sound. A comprehensive examination of the specific activities of 134 Cs and 65 Zn in the components of a freshwater system, over a 10 month period, was conducted to evaluate the specific activity hypothesis under applied conditions. This study was designed to provide comparisons of predicted and observed specific activities and to test the equivalence of specific activities between all components of the system. One dose of radioisotopes was added to the system in this study and even after 10 months these radioisotopes were not distributed similarly to the stable isotopes. This suggests that the time necessary to reach a specific activity equilibrium might be a matter of years rather than months. More importantly, in natural systems, where the radioisotope addition is continuous a specific activity equilibrium may never be achieved. These things plus the non-conservative nature of the 134 Cs and 65 Zn predicted concentrations indicates that the use of the specific activity concept for predicting radioisotope concentrations of Cs and Zn in freshwater systems is questionable. A more rigorous approach must be used, considering isotope transfer rates between components and the complexity of the system. Problems with statistical comparisons of derived variables, such as specific activities, are discussed and were considered in interpreting the results of this study

  14. Multichannel CdZnTe Gamma Ray Spectrometer

    International Nuclear Information System (INIS)

    Doty, F.P.; Lingren, C. L.; Apotovsky, B. A.; Brunsch, J.; Butler, J. F.; Collins, T.; Conwell, R.L.; Friesenhahn, S.; Gormley, J.; Pi, B.; Zhao, S.; Augustine, F.L.; Bennet, B. A.; Cross, E.; James, R. B.

    1998-01-01

    A 3 cm 3 multichannel gamma spectrometer for DOE applications is under development by Digirad Corporation. The device is based on a position sensitive detector packaged in a compact multi-chip module (MCM) with integrated readout circuitry. The modular, multichannel design will enable identification and quantitative analysis of radionuclides in extended sources, or sources containing low levels of activity. The MCM approach has the advantages that the modules are designed for imaging applications, and the sensitivity can be arbitrarily increased by increasing the number of pixels, i.e. adding modules to the instrument. For a high sensitivity probe, the outputs for each pixel can be corrected for gain and offset variations, and summed digitally. Single pixel results obtained with discrete low noise readout indicate energy resolution of 3 keV can be approached with currently available CdZnTe. The energy resolution demonstrated to date with MCMs for 511 keV gamma rays is 10 keV

  15. Crystal orientation mechanism of ZnTe epilayers formed on different orientations of sapphire substrates by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Nakasu, T.; Yamashita, S.; Aiba, T.; Hattori, S.; Sun, W.; Taguri, K.; Kazami, F.; Kobayashi, M.

    2014-01-01

    The electrooptic effect in ZnTe has recently attracted research attention, and various device structures using ZnTe have been explored. For application to practical terahertz wave detector devices based on ZnTe thin films, sapphire substrates are preferred because they enable the optical path alignment to be simplified. ZnTe/sapphire heterostructures were focused upon, and ZnTe epilayers were prepared on highly mismatched sapphire substrates by molecular beam epitaxy. Epitaxial relationships between the ZnTe thin films and the sapphire substrates with their various orientations were investigated using an X-ray diffraction pole figure method. (0001) c-plane, (1-102) r-plane, (1-100) m-plane, and (11-20) a-plane oriented sapphire substrates were used in this study. The epitaxial relationship between ZnTe and c-plane sapphire was found to be (111) ZnTe//(0001) sapphire with an in-plane orientation relationship of [−211] ZnTe//[1-100] sapphire. It was found that the (211)-plane ZnTe layer was grown on the m-plane of the sapphire substrates, and the (100)-plane ZnTe layer was grown on the r-plane sapphire. When the sapphire substrates were inclined from the c-plane towards the m-axis direction, the orientation of the ZnTe thin films was then tilted from the (111)-plane to the (211)-plane. The c-plane of the sapphire substrates governs the formation of the (111) ZnTe domain and the ZnTe epilayer orientation. These crystallographic features were also related to the atom arrangements of ZnTe and sapphire.

  16. Structural analysis of nanocrystalline ZnTe alloys synthesized by melt quenching technique

    Science.gov (United States)

    Singh, Harinder; Singh, Tejbir; Thakur, Anup; Sharma, Jeewan

    2018-05-01

    Nanocrystalline ZnxTe100-x (x=0, 5, 20, 30, 40, 50) alloys have been synthesized using melt quenching technique. Energy-dispersive X-Ray spectroscopy (EDS) has been used to verify the elemental composition of samples. Various absorption modes are recorded from Fourier transform infrared spectroscopy (FTIR) confirming the formation of ZnTe. The structural study has been performed using X-Ray Diffraction (XRD) method. All synthesized samples have been found to be nanocrystalline in nature with average crystallite size in the range from 49.3 nm to 77.1 nm. Results have shown that Zn0Te100 exhibits hexagonal phase that transforms into a cubic ZnTe phase as the amount of zinc is increased. Pure ZnTe phase has been obtained for x = 50. The texture coefficient (Tc) has been calculated to find the prominent orientations of different planes.

  17. Phase change behaviors of Zn-doped Ge2Sb2Te5 films

    International Nuclear Information System (INIS)

    Wang Guoxiang; Nie Qiuhua; Shen Xiang; Fu Jing; Xu Tiefeng; Dai Shixun; Wang, R. P.; Wu Liangcai

    2012-01-01

    Zn-doped Ge 2 Sb 2 Te 5 phase-change materials have been investigated for phase change memory applications. Zn 15.16 (Ge 2 Sb 2 Te 5 ) 84.84 phase change film exhibits a higher crystallization temperature (∼258 °C), wider band gap (∼0.78 eV), better data retention of 10 years at 167.5 °C, higher crystalline resistance, and faster crystallization speed compared with the conventional Ge 2 Sb 2 Te 5 . The proper Zn atom added into Ge 2 Sb 2 Te 5 serves as a center for suppression of the face-centered-cubic (fcc) phase to hexagonal close-packed (hcp) phase transition, and fcc phase has high thermal stability partially due to the bond recombination among Zn, Sb, and Te atoms.

  18. CdZnTe background measurements at balloon altitudes with PoRTIA

    International Nuclear Information System (INIS)

    Parsons, A.; Barthelmy, S.; Bartlett, L.; Gehrels, N.; Naya, J.; Stahle, C.M.; Tueller, J.; Teegarden, B.

    2004-01-01

    Measurements of the CdZnTe internal background at balloon altitudes are essential to determine which physical processes make the most important background contributions. We present results from CdZnTe background measurements made by PoRTIA, a small CdZnTe balloon instrument that was flown three times in three different shielding configurations. PoRTIA was passively shielded during its first flight from Palestine, Texas and actively shielded as a piggyback instrument on the GRIS balloon experiment during its second and third flights from Alice Springs, Australia, using the thick GRIS NaI anticoincidence shield. A significant CdZnTe background reduction was achieved during the third flight with PoRTIA placed completely inside the GRIS shield and blocking crystal, and thus completely surrounded by 15 cm of NaI. A unique balloon altitude background data set is provided by CdZnTe and Ge detectors simultaneously surrounded by the same thick anticoincidence shield; the presence of a single coaxial Ge detector inside the shield next to PoRTIA allowed a measurement of the ambient neutron flux inside the shield throughout the flight. These neutrons interact with the detector material to produce isomeric states of the Cd, Zn, and Te nuclei that radiatively decay; calculations are presented to determine the relative contribution of these decays to the fully shielded CdZnTe background measured by PoRTIA

  19. Thermal Emittance Measurement of the Cs2Te Photocathode in FZD Superconducting RF

    CERN Document Server

    Xiang, R; Michel, P; Murcek, P; Teichert, J

    2010-01-01

    The thermal emittance of the photocathode is an interesting physical property for the photoinjector, because it decides the minimum emittance the photoinjector can finally achieve. In this paper we will report the latest results of the thermal emittance of the Cs2Te photocathode in FZD Superconducting RF gun. The measurement is performed with solenoid scan method with very low bunch charge and relative large laser spot on cathode, in order to reduce the space charge effect as much as possible, and meanwhile to eliminate the wake fields and the effect from beam halos.

  20. Interface chemistry of CdZnTe films studied by a peel-off approach

    Energy Technology Data Exchange (ETDEWEB)

    Tao, Jun; Xu, Haitao; Zhang, Yuelu; Ji, Huanhuan; Xu, Run, E-mail: runxu@staff.shu.edu.cn; Huang, Jian; Zhang, Jijun; Liang, Xiaoyan; Tang, Ke; Wang, Linjun, E-mail: ljwang@shu.edu.cn

    2016-12-01

    Highlights: • A peel-off approach is adopted to study the interface chemistry of CdZnTe films. • A thick mixed interlayer above 84 nm is found at a low growth temperature of 200 °C. • A reaction-limited model is suggested to explain the formation of mixed interlayer. - Abstract: CdZnTe films with thickness above 50 μm were deposited at temperatures of 200–500 °C by Close Space Sublimation method. A peel-off approach has been adopted to study the interface chemistry of CdZnTe thick films. For all the CdZnTe films, the scanning electron microscopy images show the small and round-like grains formed at interface in contrast to the large ordered grains at surface. For CdZnTe films grown at a low substrate temperature of 200 °C, the interface layer between CdZnTe and substrate is mixed with Te and CdTe, as evidenced by X-ray diffraction, Raman and X-ray photoelectron spectroscopy results. The thickness of the interface layer can be estimated to be 84 nm by depth profile using X-ray photoelectron spectroscopy. In contrast, a thin interface layer less than 14 nm is found at a high substrate temperature of 500 °C. The limited reaction of Te{sub 2} and Cd (Zn) to CdZnTe at a low growth temperature is responsible for the formation of the thick interface layer and a slow deposition rate at the nucleation stage.

  1. Preparation and characterization of ZnTe thin films by SILAR method

    International Nuclear Information System (INIS)

    Kale, S.S.; Mane, R.S.; Pathan, H.M.; Shaikh, A.V.; Joo, Oh-Shim; Han, Sung-Hwan

    2007-01-01

    Nanocrystalline zinc telluride (ZnTe) thin films were prepared by using successive ionic layer adsorption and reaction (SILAR) method from aqueous solutions of zinc sulfate and sodium telluride. The films were characterized by X-ray diffraction, scanning electron microscopy, energy dispersive X-ray analysis and optical absorption measurement techniques. The synthesized ZnTe thin films were nanocrystalline with densely aggregated particles in nanometer scale and were free from the voids or cracks. The optical band gap energy of the film was found to be thickness dependent. The elemental chemical compositional stoichiometric analysis revealed good Zn:Te elemental ratio of 53:47

  2. Observation of interface carrier states in no-common-atom heterostructures ZnSe/BeTe

    Science.gov (United States)

    Gurevich, A. S.; Kochereshko, V. P.; Bleuse, J.; Mariette, H.; Waag, A.; Akimoto, R.

    2011-09-01

    The existence of intrinsic carrier interface states in heterostructures with no common atom at the interface (such as ZnSe/BeTe) is shown experimentally by ellipsometry and photoluminescence spectroscopy. These states are located on interfaces and lie inside the effective bandgap of the structure; they are characterized by a high density and a long lifetime. A tight binding model confirms theoretically the existence of these states in ZnSe/BeTe heterostructures for a ZnTe-type interface, in contrast to the case of the BeSe-type interface for which they do not exist.

  3. Observation of interface carrier states in no-common-atom heterostructures ZnSe/BeTe

    Energy Technology Data Exchange (ETDEWEB)

    Gurevich, A S; Kochereshko, V P [A F Ioffe Physical-Technical Institute, St Petersburg 194021 (Russian Federation); Bleuse, J; Mariette, H [CEA-CNRS Group ' Nanophysique et Semiconducteurs' , CEA, INAC/SP2M, and Institut Neel, 17 rue des Martyrs, F-38054 Grenoble (France); Waag, A [Braunschweig Technical University, Hans-Sommer-Strasse 66, D-38106 Braunschweig (Germany); Akimoto, R, E-mail: vladimir.kochereshko@mail.ioffe.ru [National Institute of Advanced Industrial Science and Technology (AIST), AIST Tsukuba Central 2-1, Tsukuba 305-8568 (Japan)

    2011-09-07

    The existence of intrinsic carrier interface states in heterostructures with no common atom at the interface (such as ZnSe/BeTe) is shown experimentally by ellipsometry and photoluminescence spectroscopy. These states are located on interfaces and lie inside the effective bandgap of the structure; they are characterized by a high density and a long lifetime. A tight binding model confirms theoretically the existence of these states in ZnSe/BeTe heterostructures for a ZnTe-type interface, in contrast to the case of the BeSe-type interface for which they do not exist.

  4. Aqueous synthesis of ZnTe/dendrimer nanocomposites and their antimicrobial activity: implications in therapeutics

    Science.gov (United States)

    Ghosh, S.; Ghosh, D.; Bag, P. K.; Bhattacharya, S. C.; Saha, A.

    2011-03-01

    The present strategy proposes a simple and single step aqueous route for synthesizing stable, fluorescent ZnTe/dendrimer nanocomposites with varying dendrimer terminal groups. In these hybrid materials, the fluorescence of the semiconductor combines with the biomimetic properties of the dendrimer making them suitable for various biomedical applications. The ZnTe nanocomposites thus obtained demonstrate bactericidal activity against enteropathogenic bacteria without having toxic effects on the human erythrocytes. The average size of the ZnTe nanoparticles within the dendrimer matrix was in the range of 2.9-6.0 nm, and they have a good degree of crystallinity with a hexagonal crystal phase. The antibacterial activities of the ZnTe/dendrimer nanocomposites (ZnTe DNCs) as well other semiconductor nanocomposites were evaluated against enteropathogenic bacteria including multi-drug resistant Vibrio cholerae serogroup O1 and enterotoxigenic Escherichia coli (ETEC). ZnTe DNCs had significant antibacterial activity against strains of V. cholerae and ETEC with minimum inhibitory concentrations ranging from 64 to 512 μg ml-1 and minimum bactericidal concentrations ranging from 128 to 1000 μg ml-1. Thus, the observed results suggest that these water-soluble active nanocomposites have potential for the treatment of enteric diseases like diarrhoea and cholera.The present strategy proposes a simple and single step aqueous route for synthesizing stable, fluorescent ZnTe/dendrimer nanocomposites with varying dendrimer terminal groups. In these hybrid materials, the fluorescence of the semiconductor combines with the biomimetic properties of the dendrimer making them suitable for various biomedical applications. The ZnTe nanocomposites thus obtained demonstrate bactericidal activity against enteropathogenic bacteria without having toxic effects on the human erythrocytes. The average size of the ZnTe nanoparticles within the dendrimer matrix was in the range of 2.9-6.0 nm, and they

  5. Identification of Ag-acceptors in $^{111}Ag^{111}Cd$ doped ZnTe and CdTe

    CERN Document Server

    Hamann, J; Deicher, M; Filz, T; Lany, S; Ostheimer, V; Strasser, F; Wolf, H; Wichert, T

    2000-01-01

    Nominally undoped ZnTe and CdTe crystals were implanted with radioactive /sup 111/Ag, which decays to /sup 111/Cd, and investigated by photoluminescence spectroscopy (PL). In ZnTe, the PL lines caused by an acceptor level at 121 meV are observed: the principal bound exciton (PBE) line, the donor-acceptor pair (DAP) band, and the two-hole transition lines. In CdTe, the PBE line and the DAP band that correspond to an acceptor level at 108 meV appear. Since the intensities of all these PL lines decrease in good agreement with the half-life of /sup 111/Ag of 178.8 h, both acceptor levels are concluded to be associated with defects containing a single Ag atom. Therefore, the earlier assignments to substitutional Ag on Zn- and Cd-lattice sites in the respective II-VI semiconductors are confirmed. The assignments in the literature of the S/sub 1/, S /sub 2/, and S/sub 3/ lines in ZnTe and the X/sub 1//sup Ag/, X/sub 2 //sup Ag//C/sub 1//sup Ag/, and C/sub 2//sup Ag/ lines in CdTe to Ag- related defect complexes are ...

  6. The Role of Work Function and Band Gap in Resistive Switching Behaviour of ZnTe Thin Films

    Science.gov (United States)

    Rowtu, Srinu; Sangani, L. D. Varma; Krishna, M. Ghanashyam

    2018-02-01

    Resistive switching behavior by engineering the electrode work function and band gap of ZnTe thin films is demonstrated. The device structures Au/ZnTe/Au, Au/ZnTe/Ag, Al/ZnTe/Ag and Pt/ZnTe/Ag were fabricated. ZnTe was deposited by thermal evaporation and the stoichiometry and band gap were controlled by varying the source-substrate distance. Band gap could be varied between 1.0 eV to approximately 4.0 eV with the larger band gap being attributed to the partial oxidation of ZnTe. The transport characteristics reveal that the low-resistance state is ohmic in nature which makes a transition to Poole-Frenkel defect-mediated conductivity in the high-resistance states. The highest R off-to- R on ratio achieved is 109. Interestingly, depending on stoichiometry, both unipolar and bipolar switching can be realized.

  7. Study on Oxidation or Reduction Behavior of Cs-Te-O System with Gas Conditions of Voloxidation Process

    International Nuclear Information System (INIS)

    Park, Byung Heung

    2013-01-01

    Pyroprocessing has been developed for the purpose of resolving the current spent nuclear fuel management issue and enhancing the recycle of valuable resources. Pyroprocessing has been developed with the dry technologies which are performed under high temperature conditions excluding any aqueous processes. Pyro-processes which are based on the electrochemical principles require pretreatment processes and a voloxidation process is considered as a pretreatment step for an electrolytic reduction process. Various kinds of gas conditions are applicable to the voloxidation process and the understanding of Cs behavior during the process is of importance for the analyses of waste characteristics and heat load on the overall pyroprocessing. In this study, the changes of chemical compounds with the gas conditions were calculated by analyzing gas-solid reaction behavior based on the chemical equilibria on a Cs-Te-O system. Cs 2 TeO 3 and Cs 2 TeO 4 were selected after a Tpp diagram analysis and it was confirmed that they are relatively stable under oxidizing atmospheres while it was shown that Cs and Te would be removed by volatilization under reducing atmosphere at a high temperature. This work provided basic data for predicting Cs behavior during the voloxidation process at which compounds are chemically distributed as the first stage in the pyroprocessing and it is expected that the results would be used for setting up material balances and related purposes

  8. Effects of Te inclusions on charge-carrier transport properties in CdZnTe radiation detectors

    International Nuclear Information System (INIS)

    Gu, Yaxu; Rong, Caicai; Xu, Yadong; Shen, Hao; Zha, Gangqiang; Wang, Ning; Lv, Haoyan; Li, Xinyi; Wei, Dengke; Jie, Wanqi

    2015-01-01

    Highlights: • This work reveals the behaviors of Te inclusion in affecting charge-carrier transport properties in CdZnTe detectors for the first time and analysis the mechanism therein. • The results show that charge collection efficiencies in Te inclusion degraded regions experience fast ascent under low biases and slow descent at high applied biases, which deviates from the Hecht rule. • This phenomenon is attributed to the competitive influence of two mechanisms under different biases, namely charge carrier trapping due to uniformly distributed point defects and Te inclusion induced transient charge loss. • A modified Hecht equation is further proposed to explain the effects of high-density localized defects, say Te inclusions, on the charge collection efficiency. • We believe that this research has wide appeal to analyze the macroscopic defects and their influence on charge transport properties in semiconductor radiation detectors. - Abstract: The influence of tellurium (Te) inclusions on the charge collection efficiency in cadmium zinc telluride (CdZnTe or CZT) detectors has been investigated using ion beam induced charge (IBIC) technique. Combining the analysis of infrared transmittance image, most of the low charge collection areas in the IBIC images prove the existence of Te inclusions. To further clarify the role of Te inclusions on charge transport properties, bias dependent local IBIC scan was performed on Te inclusion related regions from 20 V to 500 V. The result shows that charge collection efficiencies in Te inclusion degraded regions experience fast ascent under low biases and slow descent at high applied biases, which deviates from Hecht rule. This behavior is attributed to the competitive influence of two mechanisms under different biases, namely charge carrier trapping due to uniformly distributed point defects and Te inclusion induced transient charge loss. A modified Hecht equation is further proposed to explain the effects of high

  9. Large scale ZnTe nanostructures on polymer micro patterns via capillary force photolithography

    Energy Technology Data Exchange (ETDEWEB)

    Florence, S. Sasi, E-mail: sshanmugaraj@jazanu.edu.sa; Can, N.; Adam, H. [Department of Physics, Jazan University, Jizan-114 (Saudi Arabia); Sachan, P.; Gupta, R. K. [DST-Unit on Nanosciences, Indian Institute of Technology, Kanpur (India); Arockiasamy, L. [King Abdullah Institute for Nanotechnology, King Saud University, Riyadh 11451 (Saudi Arabia); Umadevi, M. [Department of Physics, Mother Teresa Women’s University, Kodaikanal-624101 (India)

    2016-06-10

    A novel approach to prepare micro patterns ZnTe nanostructures on Si (100) substrate using thermal evaporation is proposed by capillary Force Lithography (CFL) technique on a self-assembled sacrificial Polystyrene mask. Polystyrene thin films on Si substrates are used to fabricate surface micro-relief patterns. ZnTe nanoparticles have been deposited by thermal evaporation method. The deposited ZnTe nanoparticles properties were assessed by Atomic Force Microscope (AFM), Scanning Electron Microscope (SEM). SEM studies indicated that the particles are uniform in size and shape, well dispersed and spherical in shape. This study reports the micro-arrays of ZnTe nanoparticles on a self-assembled sacrificial PS mask using a capillary flow photolithography process which showed excellent, morphological properties which can be used in photovoltaic devices for anti-reflection applications.

  10. MBE growth and characterization of ZnTe epilayers on m-plane sapphire substrates

    Energy Technology Data Exchange (ETDEWEB)

    Nakasu, Taizo; Sun, Wei-Che; Yamashita, Sotaro; Aiba, Takayuki; Taguri, Kosuke [Department of Electrical Engineering and Bioscience, Waseda University, Tokyo 169-8555 (Japan); Kobayashi, Masakazu [Department of Electrical Engineering and Bioscience, Waseda University, Tokyo 169-8555 (Japan); Kagami Memorial Research Institute for Materials Science and Technology, Waseda University, 2-8-26, Tokyo 169-0051 (Japan); Asahi, Toshiaki [Technology Development Center, JX Nippon Mining and Metals Corporation, Hitachi 317-0056 (Japan); Togo, Hiroyoshi [NTT Microsystem Integration Laboratories, Atsugi 243-0198 (Japan)

    2014-07-15

    ZnTe epilayers were grown on transparent (10-10) oriented (m -plane) sapphire substrates by molecular beam epitaxy (MBE). Pole figure imaging was used to study the domain distribution within the layer. (211)-oriented ZnTe domains were formed on m -plane sapphire. The presence of only one kind of (211) ZnTe domain formed on the 2 -tilted m -plane sapphire substrates was confirmed. Thus, single domain (211) ZnTe epilayers can be grown on the m -plane sapphire using MBE. Although differences in the crystal structure and lattice mismatch are large, precise control of the substrate surface lattice arrangement result in the formation of high-quality epitaxial layers. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  11. (211) oriented ZnTe growth on m-plane sapphire by MBE

    Energy Technology Data Exchange (ETDEWEB)

    Nakasu, Taizo [Department of Electrical Engineering and Bioscience, Waseda University, Tokyo 169-8555 (Japan); Kobayashi, Masakazu [Department of Electrical Engineering and Bioscience, Waseda University, Tokyo 169-8555 (Japan); Kagami Memorial Research Institute for Materials Science and Technology, Waseda University, 2-8-26, Tokyo 169-0051 (Japan); Togo, Hiroyoshi [NTT Microsystem Integration Laboratories, Atugi-shi 243-0198 (Japan); Asahi, Toshiaki [Technology Development Center, JX Nippon Mining and Metals Corporation, Hitachi-shi 317-0056 (Japan)

    2013-11-15

    Single-crystalline and single domain ZnTe thin films are sought for high-performance terahertz wave detectors, and ZnTe/sapphire heterostructures were considered since the Electro-Optical (EO) effect could be obtained only from epilayers. ZnTe epilayers were grown on m-plane sapphire substrates by molecular beam epitaxy, and the potential of single domain epilayers was explored. Through the X-ray diffraction pole figure measurement it was confirmed that one (100) oriented ZnTe domain along with two kinds of (211) oriented domains were formed on the m-plane sapphire when the layer was grown at 340 C. When the layer was grown at 350 C, the (211) oriented domain dominated the film. (copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  12. Performance simulation and structure design of Binode CdZnTe gamma-ray detector

    International Nuclear Information System (INIS)

    Niu Libo; Li Yulan; Fu Jianqiang; Jiang Hao; Zhang Lan; He Bin; Li Yuanjing

    2014-01-01

    A new electrode structure CdZnTe (Cadmium Zinc Telluride) detector named Binode CdZnTe has been pro- posed in this paper. Together with the softwares of MAXWELL, GEANT4, and ROOT, the charge collection process and its gamma spectrum of the detector have been simulated and the detector structure has been optimized. In order to improve its performance further, Compton scattering effect correction has been used. The simulation results demonstrate that with refined design and Compton scattering effect correction, Binode CdZnTe detectors is capable of achieving 3.92% FWHM at 122 keV, and 1.27% FWHM at 662 keV. Com- pared with other single-polarity (electron-only) detector configurations, Binode CdZnTe detector offers a cost effective and simple structure alternative with comparable energy resolution. (authors)

  13. Photoemission investigation of the ZnSe/CdTe heterojunction band discontinuity

    International Nuclear Information System (INIS)

    Nelson, A.J.

    1995-01-01

    Synchrotron radiation soft x-ray photoemission spectroscopy and reflection high-energy electron diffraction were used to investigate the structural and electronic properties at the ZnSe/CdTe(100) heterojunction interface. ZnSe overlayers were sequentially grown in steps on p-type CdTe(100) single crystals at 200 degree C. In situ photoemission measurements were acquired after each growth in order to observe changes in the valence band electronic structure as well as changes in the Cd 4d, Zn 3d, and Te 4d core lines. The results were used to correlate the interfacial chemistry with the electronic structure and to directly determine the ZnSe/CdTe heterojunction valence band discontinuity and the consequent heterojunction band diagram. Results of these measurements reveal that the valence band offset is ΔE v =0.20 eV. copyright 1995 American Institute of Physics

  14. Characterization of CdTe and (CdZn)Te detectors with different metal contacts

    Science.gov (United States)

    Pekárek, J.; Belas, E.; Grill, R.; Uxa, Å.; James, R. B.

    2013-09-01

    In the present work we studied an influence of different types of surface etching and surface passivation of high resistivity CdZnTe-based semiconductor detector material. The aim was to find the optimal conditions to improve the properties of metal-semiconductor contact. The main effort was to reduce the leakage current and thus get better X-ray and gamma-ray spectrum, i.e. to create a detector operating at room temperature based on this semiconductor material with sufficient energy resolution and the maximum charge collection efficiency. Individual surface treatments were characterized by I-V characteristics, spectral analysis and by determination of the profile of the internal electric field.

  15. Live-monitoring of Te inclusions laser-induced thermo-diffusion and annealing in CdZnTe crystals

    International Nuclear Information System (INIS)

    Zappettini, A.; Zambelli, N.; Benassi, G.; Calestani, D.; Pavesi, M.

    2014-01-01

    The presence of Te inclusions is one of the main factors limiting performances of CdZnTe crystals as X-ray detectors. We show that by means of infrared laser radiation it is possible to move and anneal tellurium inclusions exploiting a thermo-diffusion mechanism. The process is studied live during irradiation by means of an optical microscope equipment. Experimental conditions, and, in particular, energy laser fluence, for annealing inclusions of different dimensions are determined.

  16. Live-monitoring of Te inclusions laser-induced thermo-diffusion and annealing in CdZnTe crystals

    Energy Technology Data Exchange (ETDEWEB)

    Zappettini, A.; Zambelli, N.; Benassi, G.; Calestani, D. [Istituto Materiali Elettronica e Magnetismo – Consiglio Nazionale delle Ricerche, Parma (Italy); Pavesi, M. [Istituto Materiali Elettronica e Magnetismo – Consiglio Nazionale delle Ricerche, Parma (Italy); Istituto di Fisica e Scienze della Terra, Università degli Studi di Parma, Parma (Italy)

    2014-06-23

    The presence of Te inclusions is one of the main factors limiting performances of CdZnTe crystals as X-ray detectors. We show that by means of infrared laser radiation it is possible to move and anneal tellurium inclusions exploiting a thermo-diffusion mechanism. The process is studied live during irradiation by means of an optical microscope equipment. Experimental conditions, and, in particular, energy laser fluence, for annealing inclusions of different dimensions are determined.

  17. Thermoluminescent properties of nanocrystalline ZnTe thin films: Structural and morphological studies

    Science.gov (United States)

    Rajpal, Shashikant; Kumar, S. R.

    2018-04-01

    Zinc Telluride (ZnTe) is a binary II-VI direct band gap semiconducting material with cubic structure and having potential applications in different opto-electronic devices. Here we investigated the effects of annealing on the thermoluminescence (TL) of ZnTe thin films. A nanocrystalline ZnTe thin film was successfully electrodeposited on nickel substrate and the effect of annealing on structural, morphological, and optical properties were studied. The TL emission spectrum of as deposited sample is weakly emissive in UV region at ∼328 nm. The variation in the annealing temperature results into sharp increase in emission intensity at ∼328 nm along with appearance of a new peak at ∼437 nm in visible region. Thus, the deposited nanocrystalline ZnTe thin films exhibited excellent thermoluminescent properties upon annealing. Furthermore, the influence of annealing (annealed at 400 °C) on the solid state of ZnTe were also studied by XRD, SEM, EDS, AFM. It is observed that ZnTe thin film annealed at 400 °C after deposition provide a smooth and flat texture suited for optoelectronic applications.

  18. Quickest single-step one pot mechanosynthesis and characterization of ZnTe quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Patra, S. [Dept of Physics, University of Burdwan, Golapbag, Burdwan, West Bengal 713104 (India); Pradhan, S.K., E-mail: skp_bu@yahoo.com [Dept of Physics, University of Burdwan, Golapbag, Burdwan, West Bengal 713104 (India)

    2011-05-05

    Research highlights: > First time quickest mechanosynthesis of ZnTe QDs starting from Zn and Te powders. > Cubic ZnTe are formed in a single pot at RT in a single step within 1 h of milling. > The existence of stacking faults and twin faults are evident from HRTEM images. > Distinct blue shift has been observed in UV-vis absorption spectra. > First time report that ZnTe QDs with faults can also show the quantum size effect. - Abstract: ZnTe quantum dots (QDs) are synthesized at room temperature in a single step by mechanical alloying the stoichiometric equimolar mixture (1:1 mol) of Zn and Te powders under Ar within 1 h of milling. Both XRD and HRTEM characterizations reveal that these QDs having size {approx}5 nm contain stacking faults of different kinds. A distinct blue-shift in absorption spectra with decreasing particle size of QDs confirms the quantum size confinement effect (QSCE). It is observed for first time that the QDs with considerable amount of faults can also show the QSCE. Optical band gaps of these QDs increase with increasing milling time and their band gaps can be fine-tuned easily by varying milling time of QDs.

  19. Phonon Drag in Thin Films, Cases of Bi2Te3 and ZnTe

    Science.gov (United States)

    Chi, Hang; Uher, Ctirad

    2014-03-01

    At low temperatures, in (semi-)conductors subjected to a thermal gradient, charge carriers (electrons and holes) are swept (dragged) by out-of-equilibrium phonons due to strong electron-phonon interaction, giving rise to a large contribution to the Seebeck coefficient called the phonon-drag effect. Such phenomenon was surprisingly observed in our recent transport study of highly mismatched alloys as potential thermoelectric materials: a significant phonon-drag thermopower reaching 1.5-2.5 mV/K was recorded for the first time in nitrogen-doped ZnTe epitaxial layers on GaAs (100). In thin films of Bi2Te3, we demonstrate a spectacular influence of substrate phonons on charge carriers. We show that one can control and tune the position and magnitude of the phonon-drag peak over a wide range of temperatures by depositing thin films on substrates with vastly different Debye temperatures. Our experiments also provide a way to study the nature of the phonon spectrum in thin films, which is rarely probed but clearly important for a complete understanding of thin film properties and the interplay of the substrate and films. This work is supported by the Center for Solar and Thermal Energy Conversion, an Energy Frontier Research Center funded by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences under Award Number DE-SC0000957.

  20. Properties of Hg1-xCdxTe epitaxial films grown on (211)CdTe and (211)CdZnTe

    International Nuclear Information System (INIS)

    Di Stefano, M.C.; Gilabert, U.; Heredia, E.; Trigubo, A.B.

    2004-01-01

    Hg 1-x Cd x Te (MCT) epitaxial films have been grown employing single crystalline substrates of CdTe and Cd 0.96 Zn 0.04 Te with (211)Cd and (211)Te crystalline orientations. The Isothermal Vapor Phase Epitaxy (ISOVPE) technique without Hg overpressure has been used for the epitaxial growth. Substrates and films were characterized by optical microscopy, chemical etching and X ray diffraction (Laue technique). The electrical properties were determined by Hall effect measurements. The characterization results allowed to evaluate the crystalline quality of MCT films. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  1. Defect properties of Sn- and Ge-doped ZnTe: suitability for intermediate-band solar cells

    Science.gov (United States)

    Flores, Mauricio A.

    2018-01-01

    We investigate the electronic structure and defect properties of Sn- and Ge- doped ZnTe by first-principles calculations within the DFT+GW formalism. We find that ({{{Sn}}}{{Zn}}) and ({{{Ge}}}{{Zn}}) introduce isolated energy levels deep in the band gap of ZnTe, derived from Sn-5s and Ge-4s states, respectively. Moreover, the incorporation of Sn and Ge on the Zn site is favored in p-type ZnTe, in both Zn-rich and Te-rich environments. The optical absorption spectra obtained by solving the Bethe-Salpeter equation reveals that sub-bandgap absorptance is greatly enhanced due to the formation of the intermediate band. Our results suggest that Sn- and Ge-doped ZnTe would be a suitable material for the development of intermediate-band solar cells, which have the potential to achieve efficiencies beyond the single-junction limit.

  2. Chitosan/zinc oxide-polyvinylpyrrolidone (CS/ZnO-PVP) nanocomposite for better thermal and antibacterial activity.

    Science.gov (United States)

    Karpuraranjith, M; Thambidurai, S

    2017-11-01

    A new biopolymer based ZnO-PVP nanocomposite was successfully synthesized by single step in situ precipitation method using chitosan as biosurfactant, zinc chloride as a source material, PVP as stabilizing agent and sodium hydroxide as precipitating agent. The chemical bonding and crystalline behaviors of chitosan, zinc oxide and PVP were confirmed by FT-IR and XRD analysis. The biopolymer connected ZnO particles intercalated PVP matrix was layer and rod like structure appeared in nanometer range confirmed by HR-SEM and TEM analysis. The surface topography image of CS/ZnO-PVP nanocomposite was obtained in the average thickness of 12nm was confirmed by AFM analysis. Thermal stability of cationic biopolymer based ZnO intercalated PVP has higher stability than CS-PVP and chitosan. Consequently, antimicrobial activity of chitosan/ZnO-PVP matrix acts as a better microbial inhibition activity than PVP-ZnO nanocomposite. The obtained above results demonstrate that CS and ZnO intercalated PVP matrix has better reinforced effect than other components. Therefore, Chitosan/ZnO-PVP nanocomposite may be a promising material for the biomedical applications. Copyright © 2017 Elsevier B.V. All rights reserved.

  3. Impurity identification and characterization by electrical optical and nuclear methods. The ZnTe: Au case

    International Nuclear Information System (INIS)

    Magnea, N.; Pautrat, J.L.; Saminadayar, K.; Martin, P.; Bontemps, A.

    1979-01-01

    Gold is characterized in pure ZnTe by capacitance, luminescence and infra-red absorption experiments. The position of gold in the lattice is analysed by channeling of charged particles. We show that gold is principally introduced in substitutional position (Ausub(Zn)) and give a simple acceptor level at Esub(V) + 272 meV

  4. Accumulation of Cs, Sr into leaves and grain of winter wheat under act of N, Zn, Li, Na

    International Nuclear Information System (INIS)

    Grodzinsky, D.; Tkatchuk, K.; Zhmurko, N.; Bogdan, T.; Guralchuk, Zh.

    1998-01-01

    The experiments were carried out on cv Lutencens 7 winter wheat grown on grey forest soil. In order to study the influence of nitrogen on Cs and Sr accumulation, a background of P60 K60 added in autumn different doses of nitrogen (30, 60, 120 kg/ha) were applied in spring. The influence of micronutrients on Cs and Sr accumulation was studied by adding 3 kg/ha Zn and 2 kg/ha Li to the soil under ploughing on background of N60 P60 K60. Besides the foliar application with 0.05% Na 2 SO 4 was carried out. Cation content (Cs, Sn, Zn, Li, Na) in soil and plant organs was determined by atomic absorption spectrophotometry. The Cs, Sr content in control plant leaves made up 15.0 and 21.0 mg per g of dry matter at the early stages of plant development. As the plants aged, the content of those elements in the leaves decreased strongly (3-4 times). At early stages of plant development, nitrogen caused an 8.9-11% increase in the Cs content of the leaves. At the stages of heading to grain filling, the Cs content increase was only observed at a high nitrogen dose, whereas low nitrogen doses had no effected on Cs accumulation in leaves. In should be noted that nitrogen (N60 and N120) decreased the Cs content in grain by 32-33%. As for the Sr content of grain, this was 3 to 4-fold less than that of Cs. Nitrogen had no effected on the Sr content of grain. Zn and Li addition to soil as well as foliar nutrition with Na had a different effect on the Cs and Sr content of winter wheat leaves and grain. Addition of Li decreased the Cs and Sr content of old leaves by 13% and 25% respectively. Addition of Zn and Na decreased the Sr content of old leaves but had no effect on the Cs content. Zn, Na and Li reduced the Sr content in grain also, viz. by 16,11 and 7% respectively. Thus the research has demonstrated the possibility of regulating Cs and Sr accumulation in the above-ground organs of winter wheat plants

  5. Optical properties of ZnTe epilayers with submonolayer planar narrow gap inclusions

    Energy Technology Data Exchange (ETDEWEB)

    Agekian, V. F.; Filosofov, N. G., E-mail: n.filosofov@spbu.ru; Serov, A. Yu. [St. Petersburg State University, Universitetskaya nab. 7 – 9, 199034 Si. Petersburg (Russian Federation); Shtrom, I. V. [St. Petersburg State University, Universitetskaya nab. 7 – 9, 199034 Si. Petersburg (Russian Federation); Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya 26, 194021 St. Petersburg (Russian Federation); St. Petersburg Academic University — Nanotechnology Research and Education Centre, Russian Academy of Sciences, Khlopina 8/3, 194021 St. Petersburg (Russian Federation); Karczewski, G. [Institute of Physics Polish Academy of Science, Ał. Lotnikov 32/46, 02-668 Warsaw (Poland)

    2016-06-17

    The exciton luminescence of ZnTe matrices with the embedded CdTe submonolayer inclusions is investigated. It is shown that the exciton localized by CdTe narrow gap component dominates in the emission spectrum. These localized excitons are coupled mainly with the phonons belonging to the cadmium enriched layers. The real distribution of cadmium in the direction of the heterostructure growth is determined from the energy position of the localized exciton emission bands.

  6. Transfer factors of some selected radionuclides (radioactive Cs, Sr, Mn, Co and Zn) from soil to leaf vegetables

    International Nuclear Information System (INIS)

    Ban-nai, Tadaaki; Muramatsu, Yasuyuki; Yanagisawa, Kei

    1995-01-01

    Transfer factors of radionuclides from soil to leaf vegetables (cabbage, Chinese cabbage, komatsuna, spinach and lettuce) have been studied by radiotracer experiments using Andosol as a representative of Japanese soils. The transfer factors of radioactive Cs, Sr, Mn, Co and Zn for edible parts of vegetables (average of five vegetables) were 0.11, 0.24, 0.61, 0.05 and 0.52, respectively. These values should be used in safety assessment for Japanese agricultural environment. The transfer factors of Mn, Co and Zn for spinach were higher than those for the other vegetables. The transfer factors of Cs for different organs of the leaf vegetables were rather homogeneous. The transfer factors of Sr and Mn were higher for older (outer) leaves than younger (inner) ones. In contrast to Sr and Mn, transfer factors of Zn for younger leaves were higher than those for older ones. The distribution ratios of the elements between soil-solution and soil were in the order Sr>Mn>Cs>Co>Zn, whereas the distribution ratios of the elements between plant and soil-solution were in the order Zn>Cs>Mn>Co>Sr. These results indicate that the selectivity for Sr by plants from the soil-solution was low and that for Zn was very high. (author)

  7. Lifetime Studies of Cs2Te Cathodes at the Phin RF Photoinjector at CERN

    CERN Document Server

    Hessler, C; Divall Csatari, M; Doebert, S; Fedosseev, V

    2012-01-01

    The PHIN photoinjector has been developed to study the feasibility of a photoinjector option for the CLIC (Compact LInear Collider) drive beam as an alternative to the baseline design, using a thermionic gun. The CLIC drive beam requires a high charge of 8.4 nC per bunch in 0.14 ms long trains, with 2 ns bunch spacing and 50 Hz macro pulse repetition rate, which corresponds to a total charge per macro pulse of 0.59 mC. This means unusually high peak and average currents for photoinjectors and is challenging concerning the cathode lifetime. In this paper detailed studies of the lifetime of Cs2Te cathodes, produced by the co-evaporation technique, are presented with respect to bunch charge, train length and vacuum level. Furthermore, the impact of the train length and bunch charge on the vacuum level will be discussed and steps to extend the lifetime will be outlined.

  8. Luminescence and scintillation properties of Ce-doped Cs2ZnCl4 crystals

    Science.gov (United States)

    Sugawara, K.; Koshimizu, M.; Yanagida, T.; Fujimoto, Y.; Haruki, R.; Nishikido, F.; Kishimoto, S.; Asai, K.

    2015-03-01

    In this study, we have synthesized scintillation materials based on Ce-doped Cs2ZnCl4 crystals. The light yield was enhanced by up to 20% by doping Cs2ZnCl4 with Ce3+ ions. In the scintillation time profiles, fast components exhibited decay time constants on the order of nanoseconds, which was ascribed to Auger-free luminescence (AFL). The light yield of the AFL component decreased at 10 mol% Ce3+ concentration, which is mainly attributed to the reabsorption of AFL photons inside the crystals by Ce3+ ions, as seen in the scintillation spectra. Long components had decay time constants of approximately 30 ns. In addition, at 10 mol% Ce3+ concentration, a prominent band appeared at approximately 500 nm in the scintillation spectrum, which was not observed in the photoluminescence spectra. The long components in the scintillation time profiles and the 500 nm band in the scintillation spectra were tentatively attributed to self-trapped excitons perturbed by Ce3+ ions.

  9. Syntheses and crystal structures of BaAgTbS{sub 3}, BaCuGdTe{sub 3}, BaCuTbTe{sub 3}, BaAgTbTe{sub 3}, and CsAgUTe{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Prakash, Jai; Beard, Jessica C.; Ibers, James A. [Department of Chemistry, Northwestern University, 2145 Sheridan Road, Evanston, IL 60208-3113 (United States); Mesbah, Adel [Department of Chemistry, Northwestern University, 2145 Sheridan Road, Evanston, IL 60208-3113 (United States); ICSM-UMR 5257 CNRS/CEA/UM2/ENSCM, Bat 426, BP 17171, 30207 Bagnols/Ceze (France)

    2015-06-15

    Five new quaternary chalcogenides of the 1113 family, namely BaAgTbS{sub 3}, BaCuGdTe{sub 3}, BaCuTbTe{sub 3}, BaAgTbTe{sub 3}, and CsAgUTe{sub 3}, were synthesized by the reactions of the elements at 1173-1273 K. For CsAgUTe{sub 3} CsCl flux was used. Their crystal structures were determined by single-crystal X-ray diffraction studies. The sulfide BaAgTbS{sub 3} crystallizes in the BaAgErS{sub 3} structure type in the monoclinic space group C{sup 3},{sub 2h}-C2/m, whereas the tellurides BaCuGdTe{sub 3}, BaCuTbTe{sub 3}, BaAgTbTe{sub 3}, and CsAgUTe{sub 3} crystallize in the KCuZrS{sub 3} structure type in the orthorhombic space group D{sup 1},{sub 2}{sup 7},{sub h}-Cmcm. The BaAgTbS{sub 3} structure consists of edge-sharing [TbS{sub 6}{sup 9-}] octahedra and [AgS{sub 5}{sup 9-}] trigonal pyramids. The connectivity of these polyhedra creates channels that are occupied by Ba atoms. The telluride structure features {sup 2}{sub ∞}[MLnTe{sub 3}{sup 2-}] layers for BaCuGdTe{sub 3}, BaCuTbTe{sub 3}, BaAgTbTe{sub 3}, and {sup 2}{sub ∞}[AgUTe{sub 3}{sup 1-}] layers for CsAgUTe{sub 3}. These layers comprise [MTe{sub 4}] tetrahedra and [LnTe{sub 6}] or [UTe{sub 6}] octahedra. Ba or Cs atoms separate these layers. As there are no short Q..Q (Q = S or Te) interactions these compounds achieve charge balance as Ba{sup 2+}M{sup +}Ln{sup 3+}(Q{sup 2-}){sub 3} (Q = S and Te) and Cs{sup +}Ag{sup +}U{sup 4+}(Te{sup 2-}){sub 3}. (Copyright copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  10. ZnTe Semiconductor-Polymer Gel Composited Electrolyte for Conversion of Solar Energy

    Directory of Open Access Journals (Sweden)

    Wonchai Promnopas

    2014-01-01

    Full Text Available Nanostructured cubic p-type ZnTe for dye sensitized solar cells (DSSCs was synthesized from 1 : 1 molar ratio of Zn : Te by 600 W and 900 W microwave plasma for 30 min. In this research, their green emissions were detected at the same wavelengths of 563 nm, the energy gap (Eg at 2.24 eV, and three Raman shifts at 205, 410, and 620 cm−1. The nanocomposited electrolyte of quasisolid state ZnO-DSSCs was in correlation with the increase in the JSC, VOC, fill factor (ff, and efficiency (η by increasing the wt% of ZnTe-GPE (gel polymer electrolyte to an optimum value and decreased afterwards. The optimal ZnO-DSSC performance was achieved for 0.20 wt% ZnTe-GPE with the highest photoelectronic energy conversion efficiency at 174.7% with respect to that of the GPE without doping of p-type ZnTe.

  11. Synthesis and characterization of small size fluorescent LEEH caped blue emission ZnTe quantum dots

    Directory of Open Access Journals (Sweden)

    Patnaik Sumanta Kumar

    2017-04-01

    Full Text Available We report here for the first time the synthesis of LEEH caped very small size (2 nm ZnTe quantum dots at low temperature (less than 100 °C using a simple chemical route. The effects of aging and stirring time on the absorption spectra of the quantum dots were investigated. The synthesized nanocrystal (NC was characterized by PL, TEM, XRD and the formation of very small size quantum dots having FCC structure was confirmed. Further, blue emission from the prepared sample was observed during exposure to monochromatic UV radiation. ZnTe NCs obtained in this study were found to be more stable compared to those presented in literature reports. ZnTe NCs may be considered as a new material in place of CdTe for optoelectronics devices.

  12. One-dimensional zinc selenophosphates: A_2ZnP_2Se_6 (A = K, Rb, Cs)

    International Nuclear Information System (INIS)

    Haynes, Alyssa S.; Lee, Katherine; Kanatzidis, Mercouri G.

    2016-01-01

    The new compounds A_2ZnP_2Se_6 (A = K, Rb, Cs) were synthesized via molten salt flux syntheses. The crystals feature one-dimensional "1/_∞[ZnP_2Se_6]"2"- chains charge balanced by alkali metal ions between the chains. K_2ZnP_2Se_6 crystallizes in the monoclinic space group P2_1/c; cell parameters a = 12.537(3) Aa, b = 7.2742(14) Aa, c = 14.164(3) Aa, β = 109.63(3) , Z = 4, and V = 1216.7(4) Aa"3. Rb_2ZnP_2Se_6 and Cs_2ZnP_2Se_6 are isotypic, crystallizing in the triclinic space group P anti 1. Rb_2ZnP_2Se_6 has cell parameters of a = 7.4944(15) Aa, b = 7.6013(15) Aa, c = 12.729(3) Aa, α = 96.57(3) , β = 105.52(3) , γ = 110.54(3) , Z = 2, and V = 636.6(2) Aa"3. Cs_2ZnP_2Se_6 has cell parameters of a = 7.6543(6) Aa, b = 7.7006(6) Aa, c = 12.7373(11) Aa, α = 97.007(7) , β = 104.335(7) , γ = 109.241(6) , Z = 2, and V = 669.54(10) Aa"3. (Copyright copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  13. Microinhomogeneities in Semi-Insulating Cd(Zn)Te

    International Nuclear Information System (INIS)

    Fochuk, P.; Nykoniuk, Y.; Zakharuk, Z.; Kopach, O.; Kovalenko, N.

    2017-01-01

    Here, we investigated the temperature dependences (TDs) in the range of 290-423 K for the Hall constant R H and the Hall carrier mobility μn (σ R H ) in semi-insulating Cd 0.9 Zn 0.1 Te:In (CZT) crystals. As-grown, CZT material has nonequilibrium distributions of native and impurity-related defects. Thus, before taking any measurements, the samples were kept inside the test chamber in the dark at 423 K to reach an equilibrium state at T <; 423 K. For all the tested samples, the R H TD could be described by two activation energies. At the transitional point, the TD of the carrier mobility also changes from “normal” at high temperatures to “exponential” at low temperatures. The latter is a result of the collective effect of drift barriers due to microinhomogeneity. Therefore, only the high-temperature activation energies can be assigned to the ionization energies of the compensated deep donors (ε D ). For different samples, the values for ε D 0 (at absolute zero) were found to be in the range of 0.50-0.78 eV, and the degree of donor compensation [D + ]/[D] is between 0.3 and 0.98. The low-temperature region, where there are strong effects of crystal microinhomogeneities, cannot be used to characterize the ionization energy of donors. Therefore, we describe the activation energy as ε 1 = ε D - αε b , where ε b is the drift barrier height found from the TD of the carrier mobility and α takes a value close to unity. Values of ε b for our studied samples lie within (0.05-0.35) eV.

  14. Preferential adsorption of volatile hydrocarbons on high surface area chalcogels KMBiTe 3 (M = Cr, Zn, Fe)

    KAUST Repository

    Edhaim, Fatimah; Rothenberger, Alexander

    2017-01-01

    Three chalcogels KCrBiTe3, KZnBiTe3, and KFeBiTe3 were synthesized by the sol–gel metathesis route. K+ and the transition metal cations Cr2+, Zn2+ or Fe2+ connect [BiTe3]3− anions to form amorphous black compounds. Supercritical drying of the black

  15. Desorption of Te capping layer from ZnTe (100): Auger spectroscopy ...

    African Journals Online (AJOL)

    ... configurations of tellurium Te (c (2x2)) and Te (c (2x1)) are confirmed by scanning tunneling microscopy (STM). Such a study reveals a phase transition from a rich-Te to a poor-Te surface as the annealing temperature increases. Keywords: Zinc Tellure; solar cells; structural properties; optoelectronics; semiconductors.

  16. CdTe and Cd sub 1 sub - sub x Zn sub x Te for nuclear detectors: facts and fictions

    CERN Document Server

    Fougeres, P; Hageali, M; Koebel, J M; Regal, R

    1999-01-01

    Both CdTe and Cd sub 1 sub - sub x Zn sub x Te (CZT) can be considered from their physical properties as very good materials for room temperature X- and gamma-rays detection. However, despite years of intense material research, no significant advance has been made to help one to choose between both semiconductors. This paper reviews a few facts about CdTe and CZT to attempt to draw a real comparison between both. THM-CdTe and HPB-CZT have been grown and characterized in Strasbourg. Crystal growth, alloying effects, transport properties and defects are reviewed on the basis of our results and the published ones. The results show that it is still very difficult to claim which one is the best.

  17. CdZnTe and CdTe materials for X-ray and gamma ray radiation detector applications

    International Nuclear Information System (INIS)

    Szeles, Csaba

    2004-01-01

    Good detection efficiency and high energy-resolution make Cadmium Zinc Telluride (CdZnTe) and Cadmium Telluride (CdTe) detectors attractive in many room temperature X-ray and gamma-ray detection applications such as medical and industrial imaging, industrial gauging and non-destructive testing, security and monitoring, nuclear safeguards and non-proliferation, and astrophysics. Advancement of the crystal growth and device fabrication technologies and the reduction of bulk, interface and surface defects in the devices are crucial for the widespread practical deployment of Cd 1-x Zn x Te-based detector technology. Here we review the effects of bulk, interface and surface defects on charge transport, charge transport uniformity and device performance and the progress in the crystal growth and device fabrication technologies aiming at reducing the concentration of harmful defects and improving Cd 1-x Zn x Te detector performance. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  18. Emission variation in infrared (CdSeTe)/ZnS quantum dots conjugated to antibodies

    Energy Technology Data Exchange (ETDEWEB)

    Jaramillo Gómez, J.A. [UPIITA – Instituto Politécnico Nacional, México D. F. 07320, México (Mexico); Casas Espinola, J.L., E-mail: jlcasas@esfm.ipn.mx [ESFM – Instituto Politécnico Nacional, México D. F. 07738, México (Mexico); Douda, J. [UPIITA – Instituto Politécnico Nacional, México D. F. 07320, México (Mexico)

    2014-11-15

    The paper presents the photoluminescence (PL) and Raman scattering investigations of infrared CdSeTe/ZnS quantum dots (QDs) with emission at 800 nm (1.60 eV) in nonconjugated states and after the conjugation to the anti-papilloma virus antibodies (Ab). The Raman scattering study has shown that the CdSeTe core includes two layers with different material compositions such as: CdSe{sub 0.5}Te{sub 0.5} and CdSe{sub 0.7}Te{sub 0.3}. PL spectra of nonconjugated CdSeTe/ZnS QDs are characterized by two Gaussian shape PL bands related to exciton emission in the CdSeTe core and in intermediate layer at the core/shell interface. PL spectra of bioconjugated QDs have changed essentially: the main PL band related to the core emission shifts into high energy and become asymmetric. The energy diagram of double core/shell CdSeTe/ZnS QDs has been analyzed to explain the PL spectrum of nonconjugated QDs and its transformation at the bioconjugation to the papiloma virus antibodies. It is shown that the PL spectrum transformation in bioconjugated QDs can be a powerful technique for biology and medicine.

  19. Structural evolution due to Zn and Te adsorption on As-exposed Si(211): density functional calculation

    International Nuclear Information System (INIS)

    Gupta, Bikash C; Konar, Shyamal; Grein, C H; Sivananthan, S

    2009-01-01

    Systematic theoretical investigations are carried out under the density functional formalism in an effort to understand the initial structural evolution due to the adsorption of ZnTe on As-exposed Si(211). Our calculations indicate that after the adsorption of Zn and Te on the As-exposed Si(211), the stable atomic structure qualitatively follows the ideal atomic structure of Si(211) with alteration of various bond lengths. Since the basic symmetry of the Si(211) is preserved after the adsorption of ZnTe, the deposition of ZnTe on the As terminated Si(211) prior to the deposition of CdTe and HgCdTe is useful for obtaining an ultimate quality layer of HgCdTe on Si(211). Some of our results are compared with the available experimental results, and they are found to agree with each other qualitatively.

  20. Band alignment of type I at (100ZnTe/PbSe interface

    Directory of Open Access Journals (Sweden)

    Igor Konovalov

    2016-06-01

    Full Text Available A junction of lattice-matched cubic semiconductors ZnTe and PbSe results in a band alignment of type I so that the narrow band gap of PbSe is completely within the wider band gap of ZnTe. The valence band offset of 0.27 eV was found, representing a minor barrier during injection of holes from PbSe into ZnTe. Simple linear extrapolation of the valence band edge results in a smaller calculated band offset, but a more elaborate square root approximation was used instead, which accounts for parabolic bands. PbSe was electrodeposited at room temperature with and without Cd2+ ions in the electrolyte. Although Cd adsorbs at the surface, the presence of Cd in the electrolyte does not influence the band offset.

  1. CdTe/ZnS quantum dots as fluorescent probes for ammonium determination.

    Science.gov (United States)

    Yi, Kui-Yu

    2016-06-01

    Novel CdTe/ZnS quantum dot (QD) probes based on the quenching effect were proposed for the simple, rapid, and specific determination of ammonium in aqueous solutions. The QDs were modified using 3-mercaptopropionic acid, and the fluorescence responses of the CdTe/ZnS QD probes to ammonium were detected through regularity quenching. The quenching levels of the CdTe/ZnS QDs and ammonium concentration showed a good linear relationship between 4.0 × 10(-6) and 5.0 × 10(-4) mol/L; the detection limit was 3.0 × 10(-7) mol/L. Ammonium contents in synthetic explosion soil samples were measured to determine the practical applications of the QD probes and a probable quenching mechanism was described. Copyright © 2015 John Wiley & Sons, Ltd. Copyright © 2015 John Wiley & Sons, Ltd.

  2. Photoluminescence properties of ZnTe homoepitaxial films deposited by synchrotron-radiation-excited growth

    International Nuclear Information System (INIS)

    Nishio, Mitsuhiro; Hayashida, Kazuki; Harada, Hiroki; Mitsuishi, Yoshiaki; Guo Qixin; Ogawa, Hiroshi

    2001-01-01

    ZnTe homoepitaxial films have been deposited at substrate temperatures between 27 deg. C and 100 deg. C by synchrotron-radiation-excited growth using diethylzinc and diethyltelluride. Effects of diethylzinc transport rate and substrate temperature upon the photoluminescence properties of the ZnTe films have been clarified. Strong deep level emissions centered at 1.85 and 2.1 eV related to defects such as vacancy-impurity complex become emerged with increasing diethylzinc transport rate or substrate temperature. A sharply excitonic emission at 2.375 eV associated with shallow acceptors is observed and neither a donor-acceptor pair recombination nor a deep level luminescence signal is detected in the spectrum of the film grown under the nearly stoichiometric condition, which indicates that ZnTe films of good quality can be grown even at room temperature by this growth technique

  3. Wide emission-tunable CdTeSe/ZnSe/ZnS core–shell quantum dots and their conjugation with E. coli O-157

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, Haifeng [State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100 (China); Zhou, Guangjun, E-mail: gjzhou@sdu.edu.cn [State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100 (China); Zhou, Juan [Center for Disease Control and Prevention of Jinan Military Command, Jinan 250014 (China); Xu, Dong; Zhang, Xingshuang; Kong, Peng; Yang, Zhongsen [State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100 (China)

    2015-05-15

    Highlights: • QDs with variety morphology were obtained via an injection controlled process. • 3-D PL spectra of core–shell QDs show different excitation wavelength dependence. • The PL intensity of QDs with ZnSe transition layer increases dramatically. • Core–shell QDs were processed into aqueous phase and conjugated with E. coli O-157. - Abstract: Wide emission-tunable and different morphological alloyed CdTeSe quantum dots (QDs), CdTeSe/ZnS and CdTeSe/ZnSe/ZnS core–shell QDs were successfully synthesized via an injection controlled process. The effect of injection procedure and reaction temperature were systematically discussed and the growth mechanism was proposed. Most efficient PL wavelength was correlated with reaction time and temperature. The 3-D PL spectra of spherical bare CdTeSe and core–shell QDs with different passivation showed different excitation wavelength dependency. The PL intensity of CdTeSe/ZnSe/ZnS core–shell QDs increased greatly in comparison with that of CdTeSe and CdTeSe/ZnSe QDs. ZnSe transition layer played an important role in improving the PL intensity by providing a smoothened interface and gradient band offsets. The core–shell QDs were transferred into aqueous phase and successfully conjugated with Escherichia coli O-157. The proposed phase-transfer and bio-labeling strategy may be applicable to various QDs with different compositions.

  4. Structural properties and spatial ordering in multilayered ZnMgTe/ZnSe type-II quantum dot structures

    International Nuclear Information System (INIS)

    Manna, U.; Noyan, I. C.; Neumark, G. F.; Zhang, Q.; Moug, R.; Salakhutdinov, I. F.; Dunn, K. A.; Novak, S. W.; Tamargo, M. C.; Kuskovsky, I. L.

    2012-01-01

    We report the structural properties and spatial ordering of multilayer ZnMgTe quantum dots (QDs) embedded in ZnSe, where sub-monolayer quantities of Mg were introduced periodically during growth in order to reduce the valence band offset of ZnTe QDs. The periodicity, period dispersion, individual layer thickness, and the composition of the multilayer structures were determined by comparing the experimental high resolution x-ray diffraction (HRXRD) spectra to simulated ones for the allowed (004) and quasi-forbidden (002) reflections in combination with transmission electron microscopy (TEM) results. Secondary ion mass spectroscopy (SIMS) profiles confirmed the incorporation of Mg inside the QD layers, and the HRXRD analysis revealed that there is approximately 32% Mg in the ZnMgTe QDs. The presence of Mg contributes to higher scattering intensity of the HRXRD, leading to the observation of higher order superlattice peaks in both the (004) and (002) reflections. The distribution of scattered intensity in the reciprocal space map (RSM) shows that the diffuse scattered intensity is elongated along the q x axis, indicating a vertical correlation of the dots, which is found to be less defined for the sample with larger periodicity. The diffuse scattered intensity is also found to be weakly correlated along the q z direction indicating a weak lateral correlation of the dots.

  5. Solution-processing of ultra-thin CdTe/ZnO nanocrystal solar cells

    International Nuclear Information System (INIS)

    MacDonald, Brandon I.; Gengenbach, Thomas R.; Watkins, Scott E.; Mulvaney, Paul; Jasieniak, Jacek J.

    2014-01-01

    We have carried out a detailed study into how modifications of the physical, chemical and optical properties of solution-processed, nanocrystalline CdTe layers influence the photovoltaic performance of sintered CdTe/ZnO nanocrystal solar cells. Such solar cells are fabricated through layer-by-layer assembly, which is enabled through an inter layer chemical and thermal treatment cycle. In this manner we are able to fabricate working solar cells with sintered CdTe layers as low as 90 nm, provided that grain size is precisely controlled. We show that the extent of grain growth achieved during the CdTe sintering process is strongly dependent on nanocrystal surface chemistry and chemical environment, with the removal of the organic capping ligands and the introduction of CdCl 2 prior to annealing leading to greatly enhanced growth. Due to the air processing involved and the nanocrystalline nature of the CdTe, the overall performance of these solar cells is shown to be strongly dependent on both annealing temperature and time, with optimal results requiring a balance between crystal growth and degradation due to oxidation. Using this simple bi-layer device structure, optimized treatment conditions result in power conversion efficiencies of up to 7.7% and peak internal quantum efficiencies in excess of 95%. - Highlights: • We study the growth of nanocrystalline CdTe thin films from colloidal nanocrystals. • We examine the CdTe growth profiles as a function of surface chemistry. • We show that nanocrystalline CdTe is susceptible to oxidation under air annealing. • We show how this oxidation influences performance in CdTe/ZnO solar cells. • We demonstrate CdTe/ZnO solar cells with an efficiency of 7.7% fabricated in air

  6. Analysis of grain boundaries, twin boundaries, and Te precipitates in CdZnTe grown by high-pressure Bridgeman method

    International Nuclear Information System (INIS)

    Heffelfinger, J.R.; Medlin, D.L.; James, R.B.

    1998-03-01

    Grain boundaries and twin boundaries in commercial Cd 1-x Zn x Te, which is prepared by a high pressure Bridgeman technique, have been investigated with transmission electron microscopy, scanning electron microscopy, infrared light microscopy and visible light microscopy. Boundaries inside these materials were found to be decorated with Te precipitates. The shape and local density of the precipitates were found to depend on the particular boundary. For precipitates that decorate grain boundaries, their microstructure was found to consist of a single, saucer shaped grain of hexagonal Te (space group P3 1 21). Analysis of a Te precipitate precipitates by selected area diffraction revealed the Te to be aligned with the surrounding Cd 1-x Zn x Te grains. This alignment was found to match the (111) Cd 1-x Z x Te planes with the (1 bar 101) planes of hexagonal Te. Crystallographic alignments between the Cd 1-x Zn x Te grains were also observed for a high angle grain boundary. The structure of the grain boundaries and the Te/Cd 1-x Zn x Te interface are discussed

  7. Phase equilibria in TlX-Cd(Zn)X (X-S, Se, Te) systems

    International Nuclear Information System (INIS)

    Gusejnov, F.Kh.; Babanly, M.B.; Kuliev, A.A.

    1982-01-01

    The methods of DTA, RPA and measurement of the alloys microhardness have been used to investigate the phase equilibria in the TlX-Zn(Cd)X systems. It is established that the TlZn(Cd)X 2 compounds, the presence of which is mentioned in the literature earlier, do not form in these systems. The TlSe-Zn(Cd)Se systems apply to the simple eutectic type and characterized by digenerated eutectic near the TlSe. Thermodynamical analysis of the liquidus of the TlSe-CdSe and TlTe-Zn(Cd)Te systems in approximation of the regular solutions, taking into account the dissociation of tallium chalcogenides in liquid phase, is made

  8. Unprecedented Integral-Free Debye Temperature Formulas: Sample Applications to Heat Capacities of ZnSe and ZnTe

    Directory of Open Access Journals (Sweden)

    R. Pässler

    2017-01-01

    Full Text Available Detailed analytical and numerical analyses are performed for combinations of several complementary sets of measured heat capacities, for ZnSe and ZnTe, from the liquid-helium region up to 600 K. The isochoric (harmonic parts of heat capacities, CVh(T, are described within the frame of a properly devised four-oscillator hybrid model. Additional anharmonicity-related terms are included for comprehensive numerical fittings of the isobaric heat capacities, Cp(T. The contributions of Debye and non-Debye type due to the low-energy acoustical phonon sections are represented here for the first time by unprecedented, integral-free formulas. Indications for weak electronic contributions to the cryogenic heat capacities are found for both materials. A novel analytical framework has been constructed for high-accuracy evaluations of Debye function integrals via a couple of integral-free formulas, consisting of Debye’s conventional low-temperature series expansion in combination with an unprecedented high-temperature series representation for reciprocal values of the Debye function. The zero-temperature limits of Debye temperatures have been detected from published low-temperature Cp(T data sets to be significantly lower than previously estimated, namely, 270 (±3 K for ZnSe and 220 (±2 K for ZnTe. The high-temperature limits of the “true” (harmonic lattice Debye temperatures are found to be 317 K for ZnSe and 262 K for ZnTe.

  9. Temperature dependence of Raman scattering by optical phonons in ZnTe

    International Nuclear Information System (INIS)

    Simmonds, P.E.; Martin, A.D.

    1987-01-01

    Measurements of the temperature dependence of Raman scattering by optical phonons between temperatures 5 K and 293 K in the II-VI semiconductor ZnTe are reported. Typical Raman spectra for ZnTe at different temperatures are shown and values of the measured LO and TO phonon Raman shifts and linewidths are given for T = 5, 77, and 293 K. The measured linewidth of the LO Raman line as a function of temperature is plotted and compared with model predictions based on various three- and four-phonon processes

  10. Ab initio study of spinodal decomposition in (Zn,Cr)Te

    International Nuclear Information System (INIS)

    Fukushima, T.; Sato, K.; Katayama-Yoshida, H.; Dederichs, P.H.

    2006-01-01

    The spinodal decomposition in (Zn,Cr)Te is simulated by using first principles calculations and Monte Carlo simulation. It is found that the chemical pair interaction between Cr atoms in (Zn,Cr)Te is attractive interaction and leads to spinodal decomposition. Curie temperatures in decomposed situation are estimated by the random phase approximation with taking the magnetic percolation effect into account. This decomposed phase makes the random pattern of high concentration regions which connect each other and have possibility to realize high Curie temperature. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (Abstract Copyright [2006], Wiley Periodicals, Inc.)

  11. Method in analysis of CdZnTe γ spectrum with artificial neural network

    International Nuclear Information System (INIS)

    Ai Xianyun; Wei Yixiang; Xiao Wuyun

    2005-01-01

    The analysis of gamma-ray spectra to identify lines and their intensities usually requires expert knowledge and time consuming calculations with complex fitting functions. CdZnTe detector often exhibits asymmetric peak shape particularly at high energies making peak fitting methods and sophisticated isotope identification programs difficult to use. This paper investigates the use of the neural network to process gamma spectra measured with CdZnTe detector to verify nuclear materials. Results show that the neural network method gives advantages, in particular, when large low-energetic peak tailings are observed. (authors)

  12. Resonance tunneling of charge carriers in photoexcited type-II ZnSe/BeTe heterostructures

    International Nuclear Information System (INIS)

    Zaitsev, S. V.; Maksimov, A. A.; Tartakovskii, I. I.; Yakovlev, D. R.; Waag, A.

    2008-01-01

    In is shown that, at high densities of spatially separated electrons and holes in type-II ZnSe/BeTe heterostructures, the conditions for resonance tunneling of photoexcited holes from the ZnSe layer to the BeTe layer are attainable. Nonlinear behavior of the intensity of the photoluminescence band corresponding to spatially direct optical transitions with photoexcitation intensity is observed. Numerical calculations are carried out, and the results are in good agreement with the experimental data in a wide region of variation of the optical pumping intensity

  13. The X-ray sensitivity of semi-insulating polycrystalline CdZnTe thick films

    International Nuclear Information System (INIS)

    Won, Jae Ho; Kim, Ki Hyun; Suh, Jong Hee; Cho, Shin Hang; Cho, Pyong Kon; Hong, Jin Ki; Kim, Sun Ung

    2008-01-01

    The X-ray sensitivity is one of the important parameters indicating the detector performance. The X-ray sensitivity of semi-insulating polycrystalline CdZnTe:Cl thick films was investigated as a function of electric field, mean photon energy, film thickness, and charge carrier transport parameters and, compared with another promising detector materials. The X-ray sensitivities of the polycrystalline CdZnTe films with 350 μm thickness were about 2.2 and 6.2 μC/cm 2 /R in the ohmic-type and Schottky-type detector at 0.83 V/μm, respectively

  14. Epitaxial growth and optical investigations of ZnTeO alloys

    International Nuclear Information System (INIS)

    Nabetani, Y.; Okuno, T.; Aoki, K.; Kato, T.; Matsumoto, T.; Hirai, T.

    2006-01-01

    We have grown zincblende-structured ZnTeO alloy semiconductors on GaAs substrates by molecular beam epitaxy using RF-excited O. O concentrations measured by secondary ion mass spectroscopy were found to increase with the increase of O 2 flow rate supplied during the growth, while the change of lattice constant measured by X-ray diffraction does not follow Vegard's law. It is considered that the O atoms are incorporated not only into group-VI sites but also as interstitials. Formation of other compounds such as ZnTeO 3 , Zn 2 Te 3 O 8 , and TeO 2 was not detected. Optical reflectance spectroscopy revealed the increase of the band-gap energy with O concentration that can be interpreted as the repulsive interaction between the energy states originated in the localized states of O and the conduction-band edge of host ZnTe. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (Abstract Copyright [2006], Wiley Periodicals, Inc.)

  15. On the Role of Boron in CdTe and CdZnTe Crystals

    Science.gov (United States)

    Pavesi, M.; Marchini, L.; Zha, M.; Zappettini, A.; Zanichelli, M.; Manfredi, M.

    2011-10-01

    It is well known that group III elements act as donors if they play a substitutional role at the metallic site in II-tellurides; nevertheless, several studies report both on the creation of complexes with vacancies, named A-centers, and on the involvement in self-compensation mechanisms, especially for indium. The boron concentration in II-tellurides is negligible, and its contribution to transport mechanisms has not been studied yet. For the last few years the authors have been developing a new technique to grow CdZnTe by the vertical Bridgman technique, taking advantage of encapsulation by means of boron oxide. In this way, crystals characterized by large single grains, low etch pit density, and high resistivity have been obtained. Recently, x-ray detectors with state-of-the-art performance have been produced from such crystals. Boron contamination, as a consequence of this growth method, is quite low but at least one order of magnitude above values obtained with other growth techniques. Besides being a low-cost technique which is also suitable for large-scale mass production, the encapsulated vertical Bridgman technique is quite useful to prevent dislocations, grain boundaries, and stacking faults; for these reasons, careful characterization was performed to understand the effect of boron both on the electrical properties and on the spectroscopic performance of the final crystals. Our characterization is mainly based on low-temperature photoluminescence in addition to electrical current-voltage measurements, photostimulated current, and x-ray spectroscopy. The results indicate that boron behaves like other group III elements; in fact, boron forms a complex that does not affect the good performance of our x-ray detectors, even if it shows some properties which are typical of A-centers.

  16. Design and study of a coplanar grid array CdZnTe detector for improved spatial resolution

    International Nuclear Information System (INIS)

    Ma, Yuedong; Xiao, Shali; Yang, Guoqiang; Zhang, Liuqiang

    2014-01-01

    Coplanar grid (CPG) CdZnTe detectors have been used as gamma-ray spectrometers for years. Comparing with pixelated CdZnTe detectors, CPG CdZnTe detectors have either no or poor spatial resolution, which directly limits its use in imaging applications. To address the issue, a 2×2 CPG array CdZnTe detector with dimensions of 7×7×5 mm 3 was fabricated. Each of the CPG pairs in the detector was moderately shrunk in size and precisely designed to improve the spatial resolution while maintaining good energy resolution, considering the charge loss at the surface between the strips of each CPG pairs. Preliminary measurements were demonstrated at an energy resolution of 2.7–3.9% for the four CPG pairs using 662 keV gamma rays and with a spatial resolution of 3.3 mm, which is the best spatial resolution ever achieved for CPG CdZnTe detectors. The results reveal that the CPG CdZnTe detector can also be applied to imaging applications at a substantially higher spatial resolution. - Highlights: • A novel structure of coplanar grid CdZnTe detector was designed to evaluate the possibility of applying the detector to gamma-ray imaging applications. • The best spatial resolution of coplanar grid CdZnTe detectors ever reported has been achieved, along with good spectroscopic performance. • Depth correction of the energy spectra using a new algorithm is presented

  17. Photo- and Thermo-Induced Changes in Optical Constants and Structure of Thin Films from GeSe2-GeTe-ZnTe System

    Science.gov (United States)

    Petkov, Kiril; Todorov, Rossen; Vassilev, Venceslav; Aljihmani, Lilia

    We examined the condition of preparation of thin films from GeSe2-GeTe-ZnTe system by thermal evaporation and changes in their optical properties after exposure to light and thermal annealing. The results for composition analysis of thin films showed absence of Zn independently of the composition of the bulk glass. By X-ray diffraction (XRD) analysis it was found that a reduction of ZnTe in ZnSe in bulk materials takes of place during the film deposition. A residual from ZnSe was observed in the boat after thin film deposition. Optical constants (refractive index, n and absorption coefficient, α) and thickness, d as well as the optical band gap, Eg, depending of the content of Te in ternary Ge-Se-Te system are determined from specrophotometric measurements in the spectral range 400-2500 nm applying the Swanepoel's envelope method and Tauc's procedure. With the increase of Te content in the layers the absorption edge is shifted to the longer wavelengths, refractive index increases while the optical band gap decreases from 2.02 eV for GeSe2 to 1.26 eV for Ge34Se42Te24. The values of the refractive index decrease after annealing of all composition and Eg increase, respectively. Thin films with composition of Ge27Se47Te9Zn17 and Ge28Se49Te10Zn13 were prepared by co-evaporation of (GeSe2)78(GeTe)22 and Zn from a boat and a crucible and their optical properties, surface morphology and structure were investigated. The existence of a correlation between the optical band gap and the copostion of thin films from the system studied was demonstrated.

  18. High Flux Energy-Resolved Photon-Counting X-Ray Imaging Arrays with CdTe and CdZnTe for Clinical CT

    International Nuclear Information System (INIS)

    Barber, William C.; Hartsough, Neal E.; Gandhi, Thulasidharan; Iwanczyk, Jan S.; Wessel, Jan C.; Nygard, Einar; Malakhov, Nail; Wawrzyniak, Gregor; Dorholt, Ole; Danielsen, Roar

    2013-06-01

    We have fabricated fast room-temperature energy dispersive photon counting x-ray imaging arrays using pixellated cadmium zinc (CdTe) and cadmium zinc telluride (CdZnTe) semiconductors. We have also fabricated fast application specific integrated circuits (ASICs) with a two dimensional (2D) array of inputs for readout from the CdZnTe sensors. The new CdTe and CdZnTe sensors have a 2D array of pixels with a 0.5 mm pitch and can be tiled in 2D. The new 2D ASICs have four energy discriminators per pixel with a linear energy response across the entire dynamic range for clinical CT. The ASICs can also be tiled in 2D and are designed to fit within the active area of the 2D sensors. We have measured several important performance parameters including; an output count rate (OCR) in excess of 20 million counts per second per square mm, an energy resolution of 7 keV full width at half maximum (FWHM) across the entire dynamic range, and a noise floor less than 20 keV. This is achieved by directly interconnecting the ASIC inputs to the pixels of the CdTE and CdZnTe sensors incurring very little additional capacitance. We present a comparison of the performance of the CdTe and CdZnTe sensors including the OCR, FWHM energy resolution, and noise floor. (authors)

  19. CdTe and CdZnTe gamma ray detectors for medical and industrial imaging systems

    International Nuclear Information System (INIS)

    Eisen, Y.; Shor, A.; Mardor, I.

    1999-01-01

    CdTe and CdZnTe X-ray and gamma ray detectors in the form of single elements or as segmented monolithic detectors have been shown to be useful in medical and industrial imaging systems. These detectors possess inherently better energy resolution than scintillators coupled to either photodiodes or photomultipliers, and together with application specific integrated circuits they lead to compact imaging systems of enhanced spatial resolution and better contrast resolution. Photopeak efficiencies of these detectors is greatly affected by a relatively low hole mobility-lifetime product. Utilizing these detectors as highly efficient good spectrometers, demands use of techniques to improve their charge collection properties, i.e., correct for variations in charge losses at different depths of interaction in the detector. The corrections for the large hole trapping are made either by applying electronic techniques or by fabricating detector or electrical contacts configurations which differ from the commonly used planar detectors. The following review paper is divided into three parts: The first part discusses detector contact configurations for enhancing photopeak efficiencies and the single carrier collection approach which leads to improved energy resolutions and photopeak efficiencies at high gamma ray energies. The second part demonstrates excellent spectroscopic results using thick CdZnTe segmented monolithic pad and strip detectors showing energy resolutions less than 2% FWHM at 356 keV gamma rays. The third part discusses advantages and disadvantages of CdTe and CdZnTe detectors in imaging systems and describes new developments for medical diagnostics imaging systems

  20. CdTe and CdZnTe detectors behavior in X-ray computed tomography conditions

    CERN Document Server

    Ricq, S; Garcin, M

    2000-01-01

    The application of CdTe and CdZnTe 2D array detectors for medical X-ray Computed Tomography (XCT) is investigated. Different metallic electrodes have been deposited on High-Pressure Bridgman Method CdZnTe and on Traveling Heater Method CdTe:Cl. These detectors are exposed to X-rays in the CT irradiation conditions and are characterized experimentally in current mode. Detectors performances such as sensitivity and response speed are studied. They are correlated with charge trapping and de-trapping. The trapped carrier space charges may influence the injection from the electrodes. This enables one to get information on the nature of the predominant levels involved. The performances achieved are encouraging: dynamic ranges higher than 4 decades and current decreases of 3 decades in 4 ms after X-ray beam cut-off are obtained. Nevertheless, these detectors are still limited by high trap densities responsible for the memory effect that makes them unsuitable for XCT.

  1. Light-Induced Tellurium Enrichment on CdZnTe Crystal Surfaces Detected by Raman Spectroscopy

    International Nuclear Information System (INIS)

    Hawkins, Samantha A.; Villa-Aleman, Eliel; Duff, Martine C.; Hunter, Doug B.; Burger, Arnold; Groza, Michael; Buliga, Vladimir; Black, David R.

    2008-01-01

    CdZnTe (CZT) crystals can be grown under controlled conditions to produce high-quality crystals to be used as room-temperature radiation detectors. Even the best crystal growth methods result in defects, such as tellurium secondary phases, that affect the crystal's performance. In this study, CZT crystals were analyzed by micro-Raman spectroscopy. The growth of Te rich areas on the surface was induced by low-power lasers. The growth was observed versus time with low-power Raman scattering and was observed immediately under higher-power conditions. The detector response was also measured after induced Te enrichment.

  2. Clustering method to process signals from a CdZnTe detector

    International Nuclear Information System (INIS)

    Zhang, Lan; Takahashi, Hiroyuki; Fukuda, Daiji; Nakazawa, Masaharu

    2001-01-01

    The poor mobility of holes in a compound semiconductor detector results in the imperfect collection of the primary charge deposited in the detector. Furthermore the fluctuation of the charge loss efficiency due to the change in the hole collection path length seriously degrades the energy resolution of the detector. Since the charge collection efficiency varies with the signal waveform, we can expect the improvement of the energy resolution through a proper waveform signal processing method. We developed a new digital signal processing technique, a clustering method which derives typical patterns containing the information on the real situation inside a detector from measured signals. The obtained typical patterns for the detector are then used for the pattern matching method. Measured signals are classified through analyzing the practical waveform variation due to the charge trapping, the electric field and the crystal defect etc. Signals with similar shape are placed into the same cluster. For each cluster we calculate an average waveform as a reference pattern. Using these reference patterns obtained from all the clusters, we can classify other measured signal waveforms from the same detector. Then signals are independently processed according to the classified category and form corresponding spectra. Finally these spectra are merged into one spectrum by multiplying normalization coefficients. The effectiveness of this method was verified with a CdZnTe detector of 2 mm thick and a 137 Cs gamma-ray source. The obtained energy resolution as improved to about 8 keV (FWHM). Because the clustering method is only related to the measured waveforms, it can be applied to any type and size of detectors and compatible with any type of filtering methods. (author)

  3. The development of drift-strip detectors based on CdZnTe

    DEFF Research Database (Denmark)

    Gostilo, V.; Budtz-Jørgensen, Carl; Kuvvetli, Irfan

    2002-01-01

    The design and technological development of a CdZnTe drift strip detector is described. The device is based on a monocrystal of dimensions 10 x 10 x 3 mm(3) and has a pitch of 200 mum and a strip width of 100 mum. The strip length is 9.5 mm. The distribution of the leakage currents of the strips...

  4. Electronic properties and charge density of BexZn1− xTe alloys

    Indian Academy of Sciences (India)

    Electronic band structure calculations are performed for the BeZn1−Te (0 ≤ ≤ 1 in steps of 0.2) alloys following the empirical pseudopotential method. The alloying effects are modelled through the modified virtual crystal approximation. Throughout the composition, valence band maximum resides at the point.

  5. X-ray diffraction, Raman, and photoacoustic studies of ZnTe nanocrystals

    Science.gov (United States)

    Ersching, K.; Campos, C. E. M.; de Lima, J. C.; Grandi, T. A.; Souza, S. M.; da Silva, D. L.; Pizani, P. S.

    2009-06-01

    Nanocrystalline ZnTe was prepared by mechanical alloying. X-ray diffraction (XRD), energy dispersive spectroscopy, Raman spectroscopy, and photoacoustic absorption spectroscopy techniques were used to study the structural, chemical, optical, and thermal properties of the as-milled powder. An annealing of the mechanical alloyed sample at 590 °C for 6 h was done to investigate the optical properties in a defect-free sample (close to bulk form). The main crystalline phase formed was the zinc-blende ZnTe, but residual trigonal tellurium and hexagonal ZnO phases were also observed for both as-milled and annealed samples. The structural parameters, phase fractions, average crystallite sizes, and microstrains of all crystalline phases were obtained from Rietveld analyses of the X-ray patterns. Raman results corroborate the XRD results, showing the longitudinal optical phonons of ZnTe (even at third order) and those modes of trigonal Te. Nonradiative surface recombination and thermal bending heat transfer mechanisms were proposed from photoacoustic analysis. An increase in effective thermal diffusivity coefficient was observed after annealing and the carrier diffusion coefficient, the surface recombination velocity, and the recombination time parameters remained the same.

  6. The (γ, p) reaction in 30Si, 68Zn and 130Te at intermediate energies

    International Nuclear Information System (INIS)

    Bulow, B.; Johnsson, B.; Nilsson, M.

    1977-01-01

    The yields of (γ, p) reactions on 30 Si, 68 Zn and 130 Te have been measured as a function of the bremsstrahlung end-point energy, Esub(γ, max), in the energy range 75-800 MeV, using the activation method. Cross sections have been deduced and are compared to results obtained using a semiempirical model. (Auth.)

  7. Diagnostic X-ray spectrometry using a commercial CdZnTe detector

    International Nuclear Information System (INIS)

    Becker, P.H.B.

    1998-01-01

    X ray spectrometry using Ge or Si detectors is an established tool to measure characterization parameters of X-ray beams. This work describes how a commercial CdZnTe was used to perform diagnostic X-ray spectrometry. Spectra were measured for two X-ray machines and compared with similar data found in the literature with an agreement of 2% rms

  8. Performance of CdZnTe coplanar-grid gamma-ray detectors

    International Nuclear Information System (INIS)

    Luke, P.N.; Eissler, E.E.

    1995-11-01

    CdZnTe crystals grown using the high-pressure Bridgman method exhibit many properties that are desirable for radiation detector fabrication, such as high resistivity, stable operation, relative ease of processing, and the availability of large volume crystals. However, as is common with other compound semi-conductor materials, currently available CdZnTe crystals have poor charge transport characteristics. This seriously the spectral performance of detectors, especially in gamma-ray detection. The coplanar-grid detection technique was recently developed to address such charge collection problems. This technique was first demonstrated using a 5 mm cube CdZnTe detector, and a dramatic improvement in spectral response has been achieved. These early results verified the effectiveness of this technique and suggested that large-volume gamma-ray detectors with high energy resolution can be realized. To further the development of such detectors, it is important to understand the various factors that affect detector performance. The purpose of this paper is to examine the effects of material properties on the spectral performance of CdZnTe coplanar-grid detectors. Theoretical spectral response is to show the level of performance that can be achieved given the typical carrier mobility-lifetime (μτ) properties of present-day materials. Nonuniformity in the charge transport properties of the material, which could limit the energy resolution of the detectors, has been studied experimentally and some of the results are presented here

  9. Effect of anneal and quench on the nature of the dominant acceptors in ZnTe

    International Nuclear Information System (INIS)

    Bensahel, D.; Magnea, N.; Pautrat, J.L.; Pfister, J.C.; Revoil, L.

    1978-01-01

    Anneal and quench studies on high purity ZnTe have shown the dominant role of impurities and their solubilities as functions of stoichiometrical conditions. The role of 'b' acceptor, related to lithium, 'g' acceptor, related to silver, and 'a' acceptor of unknown nature is reported

  10. Current state-of-the-art industrial and research applications using room-temperature CdTe and CdZnTe solid state detectors

    International Nuclear Information System (INIS)

    Eisen, Y.

    1996-01-01

    Improvements of CdTe crystal quality and significant progress in the growth of large ingots of high resistivity CdZnTe material enable the fabrication of larger area detectors in single element form or monolithic arrays. These advances allow for the development of imaging devices of improved spatial resolution for industrial, research and medical applications. CdTe and CdZnTe detectors operate in single photon counting mode or in current mode (charge integrating mode). The paper presents advantages of CdTe and CdZnTe over common scintillator type detectors, but also presents the shortcomings of the former detectors with respect to charge collection which limit the yields of good spectrometers. The paper reviews industrial and research applications utilizing these detectors and in particular describes in detail two imaging systems for security screening and custom inspection. These systems are characterized by large dynamic range and good spatial resolution and are composed of large arrays of CdTe spectrometers and discriminator grade detectors. A wide energy range detector assembly, for astrophysical research of gamma ray bursts composed of CdTe, HgI 2 and CdZnTe spectrometers in two dimensional arrays is also presented. (orig.)

  11. Performance Evaluation of New Generation CdZnTe Detectors for Safeguards Applications

    International Nuclear Information System (INIS)

    Ivanovs, V.; Mintcheva, J.; Berlizov, A.; Lebrun, A.

    2015-01-01

    Cadmium zinc telluride detectors (CdZnTe) have found a wide application in nondestructive assay measurements in the IAEA's verification practice. It is because of their form factor, usability, sensitivity and good spectral characteristics that they are extensively used for fresh and spent fuel attribute test measurements. Until now, the series of CdZnTe detectors utilized in the IAEA have covered the range of 5 mm 3 , 20 mm 3 , 60 mm 3 and 500mm 3 of sensitive volume. Recently, new CdZnTe detectors with improved spectroscopic characteristics and significantly bigger active volume have become available, owing to advances in crystal and detector manufacturing and signal processing technologies. The distinctive feature of this new technological development is the application of a low-intensity monochromatic optical stimulation with infrared (IR) light. The use of IR illumination with a properly chosen wavelength close to the absorption edge of the CdZnTe can significantly improve the performance of the detectors. Recognizing potential benefits of these detectors in safeguards applications, the IAEA has performed an evaluation of their performance characteristics. Under evaluation were several new detectors with sensitive volumes of 500 mm 3 , 1500 mm 3 and 4000 mm 3 , as well as all-in-one 60 mm 3 , 500 mm 3 and 1500 mm 3 integrated micro-spectrometers available from RITEC, Latvia. In addition to the standard performance characteristics, such as energy resolution, peak shape, efficiency, linearity, throughput and temperature stability, the potential use of the detectors for safeguards specific measurements, such as uranium enrichment with infinite thickness method, was of particular interest. The paper will describe the advances in the CdZnTe detector technology and present the results of their performance evaluation. (author)

  12. Spectral response of THM grown CdZnTe crystals

    DEFF Research Database (Denmark)

    Chen, H.; Awadalla, S.A.; Harris, F.

    2008-01-01

    The spectral response of several crystals grown by the Traveling Heater Method (THM) were investigated. An energy resolution of 0.98% for a Pseudo Frisch-Grid of 4 × 4 × 9 mm3 and 2.1% FWHM for a coplanar-grid of size 11 × 11 × 5 mm3 were measured using 137Cs-662 keV. In addition a 4% FWHM at 122...

  13. Study of a new architecture of gamma cameras with Cd/ZnTe/CdTe semiconductors; Etude d'une nouvelle architecture de gamma camera a base de semi-conducteurs CdZnTe /CdTe

    Energy Technology Data Exchange (ETDEWEB)

    Guerin, L

    2007-11-15

    This thesis studies new semi conductors for gammas cameras in order to improve the quality of image in nuclear medicine. The chapter 1 reminds the general principle of the imaging gamma, by describing the radiotracers, the channel of detection and the types of Anger gamma cameras acquisition. The physiological, physical and technological limits of the camera are then highlighted, to better identify the needs of future gamma cameras. The chapter 2 is dedicated to a bibliographical study. At first, semi-conductors used in imaging gamma are presented, and more particularly semi-conductors CDTE and CdZnTe, by distinguishing planar detectors and monolithic pixelated detectors. Secondly, the classic collimators of the gamma cameras, used in clinical routine for the most part of between them, are described. Their geometry is presented, as well as their characteristics, their advantages and their inconveniences. The chapter 3 is dedicated to a state of art of the simulation codes dedicated to the medical imaging and the methods of reconstruction in imaging gamma. These states of art allow to introduce the software of simulation and the methods of reconstruction used within the framework of this thesis. The chapter 4 presents the new architecture of gamma camera proposed during this work of thesis. It is structured in three parts. The first part justifies the use of semiconducting detectors CdZnTe, in particular the monolithic pixelated detectors, by bringing to light their advantages with regard to the detection modules based on scintillator. The second part presents gamma cameras to base of detectors CdZnTe (prototypes or commercial products) and their associated collimators, as well as the interest of an association of detectors CdZnTe in the classic collimators. Finally, the third part presents in detail the HiSens architecture. The chapter 5 describes both software of simulation used within the framework of this thesis to estimate the performances of the Hi

  14. Electrochemically decorated ZnTe nanodots on single-walled carbon nanotubes for room-temperature NO2 sensor application.

    Science.gov (United States)

    Kim, Donguk; Park, Ki-Moon; Shanmugam, Rajakumar; Yoo, Bongyoung

    2014-11-01

    A gas sensor with ZnTe nanodot-modified single-walled carbon nanotubes (SWCNTs) is demonstrated for NO2 detection at room temperature. ZnTe nanodots are electrochemically deposited in an aqueous solution containing ZnSO4, TeO2 and citrate. A deposition potential range of ZnTe formation of -0.65 to -0.9 V is determined by cyclic voltammetry, and an intermetallic ZnTe compound is formed at above 50 degrees C bath. SWCNT-based sensors show the highly sensitive response down to 1 ppm NO2 gas at room temperature. In particular, the sensitivity of ZnTe nanodot-modified SWCNTs is increased by 6 times as compared to that of pristine SWCNT sensors. A selectivity test of SWCNT-ZnTe nanodots sensors is carried out with ammonia gas (NH3) and methanol vapor (MeOH), and the result confirms an excellent selectivity to NO2 gas.

  15. Substrate temperature dependence of ZnTe epilayers grown on GaAs(0 0 1) by molecular beam epitaxy

    Science.gov (United States)

    Zhao, Jie; Zeng, Yiping; Liu, Chao; Li, Yanbo

    2010-04-01

    ZnTe thin films have been grown on GaAs(0 0 1) substrates at different temperatures with constant Zn and Te beam equivalent pressures (BEPs) by molecular beam epitaxy (MBE). In situ reflection high-energy electron diffraction (RHEED) observation indicates that two-dimensional (2D) growth mode can be established after around one-minute three-dimensional (3D) nucleation by increasing the substrate temperature to 340 °C. We found that Zn desorption from the ZnTe surface is much greater than that of Te at higher temperatures, and estimated the Zn sticking coefficient by the evolution of growth rate. The Zn sticking coefficient decreases from 0.93 to 0.58 as the temperature is elevated from 320 to 400 °C. The ZnTe epilayer grown at 360 °C displays the narrowest full-width at half-maximum (FWHM) of 660 arcsec from (0 0 4) reflection in double-crystal X-ray rocking curve (DCXRC) measurements. The surface morphology of ZnTe epilayers is strongly dependent on the substrate temperature, and the root-mean-square (RMS) roughness diminishes drastically with the increase in temperature.

  16. X-ray detection capability of a Cs2ZnCl4 single-crystal scintillator

    International Nuclear Information System (INIS)

    Yahaba, Natsuna; Koshimizu, Masanori; Sun, Yan; Asai, Keisuke; Yanagida, Takayuki; Fujimoto, Yutaka; Haruki, Rie; Nishikido, Fumihiko; Kishimoto, Shunji

    2014-01-01

    The X-ray detection capability of a scintillation detector equipped with a Cs 2 ZnCl 4 single crystal was evaluated. The scintillation decay kinetics can be expressed as the sum of two exponential decay components. The fast decay component had a decay time constant of 1.8 ns, and its relative intensity was 95%. The total light output was 630 photons/MeV, and a subnanosecond timing resolution of 0.66 ns was obtained. The detection efficiency of 67.4 keV X-rays was 80% for a detector equipped with a 2.2-mm-thick Cs 2 ZnCl 4 crystal. Thus, excellent timing resolution and high detection efficiency were achieved simultaneously. (author)

  17. X-ray diffraction study of epitaxial heterostructures of II-VI CdTe and ZnTe semiconductors; Etude par diffraction de rayons X d`heterostructures epitaxiees a base des semi-conducteurs II-VI CdTe et ZnTe

    Energy Technology Data Exchange (ETDEWEB)

    Bouchet-Boudet, N.

    1996-10-07

    This work deals with the structural study of II-VI semiconductor (CdTe and ZnTe) heterostructures by X-ray diffraction and reflectivity. These heterostructures have a high lattice parameter misfit and are grown by Molecular Beam Epitaxy. Two main subjects are developed: the characterization of ZnTe wires, grown by step propagation on a CdTe (001) vicinal surface, and the study of the vertical correlations in Cd{sub 0.8}Zn{sub 0.2}Te / CdTe superlattices and superlattices made of ZnTe fractional layers spaced by CdTe. The growth of organised system is up to date; its aim is to realize quantum boxes (or wires) superlattices which are laterally and vertically ordered. The deformation along the growth axis induced by a ZnTe fractional layer inserted in a CdTe matrix is modelled, in the kinematical approximation, to reproduce the reflectivity measured around the substrate (004) Bragg peak. The lateral periodicity of the wires, deposited on a vicinal surface is a new and difficult subject. Some results are obtained on a vertical superlattice grown on a 1 deg. mis-cut surface. The in-plane and out-of-plane correlation lengths of a Cd{sub 0.8}Zn{sub 0.2}Te / CdTe superlattice are deduced from the diffused scattered intensity measured at grazing incidence. The calculations are made within the `distorted Wave Born Approximation`. The vertical correlation in ZnTe boxes (or wines) superlattices can be measured around Bragg peaks. It is twice bigger in a superlattice grown on a 2 deg. mis-cut substrate than a nominal one. (author). 74 refs.

  18. CdCl2 passivation of polycrystalline CdMgTe and CdZnTe absorbers for tandem photovoltaic cells

    Science.gov (United States)

    Swanson, Drew E.; Reich, Carey; Abbas, Ali; Shimpi, Tushar; Liu, Hanxiao; Ponce, Fernando A.; Walls, John M.; Zhang, Yong-Hang; Metzger, Wyatt K.; Sampath, W. S.; Holman, Zachary C.

    2018-05-01

    As single-junction silicon solar cells approach their theoretical limits, tandems provide the primary path to higher efficiencies. CdTe alloys can be tuned with magnesium (CdMgTe) or zinc (CdZnTe) for ideal tandem pairing with silicon. A II-VI/Si tandem holds the greatest promise for inexpensive, high-efficiency top cells that can be quickly deployed in the market using existing polycrystalline CdTe manufacturing lines combined with mature silicon production lines. Currently, all high efficiency polycrystalline CdTe cells require a chloride-based passivation process to passivate grain boundaries and bulk defects. This research examines the rich chemistry and physics that has historically limited performance when extending Cl treatments to polycrystalline 1.7-eV CdMgTe and CdZnTe absorbers. A combination of transmittance, quantum efficiency, photoluminescence, transmission electron microscopy, and energy-dispersive X-ray spectroscopy clearly reveals that during passivation, Mg segregates and out-diffuses, initially at the grain boundaries but eventually throughout the bulk. CdZnTe exhibits similar Zn segregation behavior; however, the onset and progression is localized to the back of the device. After passivation, CdMgTe and CdZnTe can render a layer that is reduced to predominantly CdTe electro-optical behavior. Contact instabilities caused by inter-diffusion between the layers create additional complications. The results outline critical issues and paths for these materials to be successfully implemented in Si-based tandems and other applications.

  19. Variable dimensionality and framework found in a series of quaternary zinc selenites, A2Zn3(SeO3)4·xH2O (A = Na, Rb, and Cs; 0≤x≤1) and Cs2Zn2(SeO3)3·2H2O

    Science.gov (United States)

    Lü, Minfeng; Jo, Hongil; Oh, Seung-Jin; Ok, Kang Min

    2017-01-01

    Five new alkali metal zinc selenites, A2Zn3(SeO3)4·xH2O (A = Na, Rb, and Cs; 0≤x≤1) and Cs2Zn2(SeO3)3·2H2O have been synthesized by heating a mixture of ZnO, SeO2 and A2CO3 (A = Na, Rb, and Cs), and characterized by X-ray diffraction (XRD) and spectroscopic analyses techniques. All of the reported materials revealed a rich structural chemistry with different frameworks and connection modes of Zn2+. While Rb2Zn3(SeO3)4 and Cs2Zn3(SeO3)4·H2O revealed three-dimensional frameworks consisting of isolated ZnO4 tetrahedra and SeO3 polyhedra, Na2Zn3(SeO3)4, Cs2Zn3(SeO3)4, and Cs2Zn2(SeO3)3·2H2O contained two-dimensional [Zn3(SeO3)4]2- layers. Specifically, whereas isolated ZnO4 tetrahedra and SeO3 polyhedra are arranged into two-dimensional [Zn3(SeO3)4]2- layers in two cesium compounds, circular [Zn3O10]14- chains and SeO3 linkers are formed in two-dimensional [Zn3(SeO3)4]2- layers in Na2Zn3(SeO3)4. Close structural examinations suggest that the size of alkali metal is significant in determining the framework geometry as well as connection modes of transition metal cations.

  20. Optical characterization of CdSe/ZnTe type-II interfaces for photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Richters, Jan-Peter; Bleuse, Joel [CEA-CNRS group ' ' Nanophysique et semiconducteurs' ' , CEA-Grenoble, INAC, SP2M, 17 rue des Martyrs, 38042 Grenoble (France); Gerard, Lionel; Andre, Regis [CEA-CNRS group ' ' Nanophysique et semiconducteurs' ' , Institut Neel, CNRS, BP 166, 38042 Grenoble Cedex 9 (France)

    2012-07-01

    Solar cells based on direct bandgap semiconductors (GaAs,CdTe,CdSe..) show an efficient light absorption compared to silicon solar cells. This is an advantage for material savings due to thinner absorbers, but it also comes with the drawback of higher losses due to efficient radiative electron-hole recombination. Such losses could be prevented through the use of type-II interfaces which separate electrons and holes within the active area, similar to a p-n junction. We report a study of CdSe/ZnTe samples showing such an interface. The CdSe bandgap (1.7 eV) is well adapted to the solar spectrum and its lattice parameter mismatch with ZnTe is exceptionally low. We have grown, by MBE, different kinds of samples like CdSe/ZnTe 2D interfaces and superlattices and present time-resolved spectroscopy results which specify the efficiency of the electron-hole separation in these type-II structures. The measured decay time can be above 100 ns for the interface optical transition, i.e. 3 orders of magnitude slower than the typical PL decay time for the constitutive materials taken separately.

  1. Bridgman growth and assessment of CdTe and CdZnTe using the accelerated crucible rotation technique

    Energy Technology Data Exchange (ETDEWEB)

    Capper, P.; Harris, J.E.; O' Keefe, E.; Jones, C.L.; Ard, C.K.; Mackett, P.; Dutton, D. (Philips Infrared Defence Components, Southampton (United Kingdom))

    1993-01-30

    The Bridgman growth process for CdTe has been extended by applying the accelerated crucible rotation technique (ACRT). Modelling using ACRT has been extended to the 50 mm diameter required to produce grains large enough to yield CdTe(and Cd[sub 0.96]Zn[sub 0.04]Te) slices suitable for use in liquid phase epitaxy of Cd[sub x]Hg[sub 1-x]Te (CMT) layers. Two regimes are identified: ACRT parameter combinations which give maximum fluid velocities and that which maintains stable Ekman flow. Growth of crystals shows that larger single crystal regions are obtained when the Ekman flow is stable. Effects of changing the ampoule base shape have also been investigated. Techniques have been developed to produce 20 mm x 30 mm substrates oriented oriented close to the (111) direction. Assessment of these samples has included IR transmission, IR microscopy, defect etching, X-ray topography and X-ray diffraction curve width measurements. Chemical analyses have been carried out to determine impurity levels and matrix element distributions. Good quality CMT epitaxial layers, as demonstrated by good surface topography, electrical data and chemical analyses, have been grown onto material produced in this study. (orig.).

  2. Cu and Zn substituted silicon clathrates with the cubic type-II structure. Synthesis and characterization of Cs{sub 8}Na{sub 16}Cu{sub 3.8}Si{sub 132.2} and Cs{sub 8}Na{sub 16}Zn{sub 6.9}Si{sub 129.1}

    Energy Technology Data Exchange (ETDEWEB)

    Schaefer, Marion C.; Bobev, Svilen [Department of Chemistry and Biochemistry, University of Delaware, Newark, DE (United States)

    2017-12-13

    Studies in the systems Cs-Na-Cu-Si and Cs-Na-Zn-Si yielded the novel clathrates Cs{sub 8}Na{sub 16}(Cu,Si){sub 136} and Cs{sub 8}Na{sub 16}(Zn,Si){sub 136}, both with the cubic type-II structure [space group Fd anti 3m (no. 227), Pearson symbol cF160]. The structures of the title compounds were established from single-crystal X-ray diffraction methods, confirming the complete ordering of the Cs and Na guest atoms. The framework-building Si atoms are found to be randomly substituted by Cu atoms on framework site 96g, exclusively. In the structure of Cs{sub 8}Na{sub 16}(Zn,Si){sub 136}, the refinements indicate that the Zn and Si atoms co-occupy two of the three framework sites with notable preference for site 96g over site 32e. The corresponding refined compositions and unit cell parameters are as follows: Cs{sub 8}Na{sub 16}Cu{sub 3.8}Si{sub 132.2(1)} [a = 14.7583(15) Aa]; Cs{sub 8}Na{sub 16}Zn{sub 6.9}Si{sub 129.1(1)} [a = 14.7682(5) Aa], respectively. The type-II clathrates can be obtained only from experiments employing both Na and Cs, whereas work in the ternary Cs-Cu-Si, Cs-Zn-Si, Na-Cu-Si, and Na-Zn-Si systems failed to yield any clathrate phases. At the same conditions, exploratory studies in the K-Zn-Si and Rb-Zn-Si systems provided evidence that type-I clathrates are favored. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  3. CdZnTe quantum dots study: energy and phase relaxation process

    International Nuclear Information System (INIS)

    Viale, Yannick

    2004-01-01

    We present a study of the electron-hole pair energy and phase relaxation processes in a CdTe/ZnTe heterostructure, in which quantum dots are embedded. CdZnTe quantum wells with a high Zinc concentration, separated by ZnTe barriers, contain islands with a high cadmium concentration. In photoluminescence excitation spectroscopy experiments, we evidence two types of electron hole pair relaxation processes. After being excited in the CdZnTe quantum well, the pairs relax their energy by emitting a cascade of longitudinal optical phonons until they are trapped in the quantum dots. Before their radiative recombination follows an intra-dot relaxation, which is attributed to a lattice polarization mechanism of the quantum dots. It is related to the coupling between the electronic and the vibrational states. Both relaxation mechanisms are reinforced by the strong polar character of the chemical bond in II-VI compounds. Time resolved measurements of transmission variations in a pump-probe configuration allowed us to investigate the population dynamics of the electron-hole pairs during the relaxation process. We observe a relaxation time of about 2 ps for the longitudinal phonon emission cascade in the quantum well before a saturation of the quantum dot transition. We also measured an intra-box relaxation time of 25 ps. The comparison of various cascades allows us to estimate the emission time of a longitudinal optical phonon in the quantum well to be about 100 fs. In four waves mixing experiments, we observe oscillations that we attribute to quantum beats between excitonic and bi-excitonic transitions. The dephasing times that we measure as function of the density of photons shows that excitons are strongly localized in the quantum dots. The excitonic dephasing time is much shorter than the radiative lifetime and is thus controlled by the intra-dot relaxation time. (author) [fr

  4. Recent advances in Tl Br, Cd Te and CdZnTe semiconductor radiation detectors: a review

    International Nuclear Information System (INIS)

    Oliveira, Icimone B.

    2011-01-01

    The success in the development of radiation spectrometers operating at room temperature is based on many years of effort on the part of large numbers of workers around the world. These individuals have contributed to the understanding of the fundamental materials issues associated with the growth of semiconductors for this application, the development of device fabrication and processing technology, and advances in low noise electronics and pulse processing. Progress in this field continues at an accelerated pace, as in evidenced by the improvements in detector performance and by the growing number of commercial products. Thus, the last years have been seen continued effort in the development of room temperature compound semiconductors devices. High-Z compound semiconductor detectors has been explored for high energy resolution, high detection efficiency and are of low cost. Compound semiconductors detectors are well suited for addressing needs of demanding applications such as bore hole logging where high operating temperature are encountered. In this work recent developments in semiconductors detectors were reviewed. This review concentrated on thallium bromide (TlBr), cadmium zinc telluride (CdZnTe) and cadmium telluride (CdTe) crystals detectors. TlBr has higher stopping power compared to common semiconductor materials because it has the higher photoelectric and total attenuation coefficients over wide energy range from 100 keV to 1 MeV. CdTe and CdZnTe detectors have several attractive features for detecting X-ray and low energy gamma ray. Their relatively large band gaps lead to a relatively low leakage current and offer an excellent energy resolution at room temperature. A literature survey and bibliography was also included. (author)

  5. Recent advances in Tl Br, Cd Te and CdZnTe semiconductor radiation detectors: a review

    Energy Technology Data Exchange (ETDEWEB)

    Oliveira, Icimone B. [Universidade Bandeirante (UNIBAN), Sao Paulo, SP (Brazil)

    2011-07-01

    The success in the development of radiation spectrometers operating at room temperature is based on many years of effort on the part of large numbers of workers around the world. These individuals have contributed to the understanding of the fundamental materials issues associated with the growth of semiconductors for this application, the development of device fabrication and processing technology, and advances in low noise electronics and pulse processing. Progress in this field continues at an accelerated pace, as in evidenced by the improvements in detector performance and by the growing number of commercial products. Thus, the last years have been seen continued effort in the development of room temperature compound semiconductors devices. High-Z compound semiconductor detectors has been explored for high energy resolution, high detection efficiency and are of low cost. Compound semiconductors detectors are well suited for addressing needs of demanding applications such as bore hole logging where high operating temperature are encountered. In this work recent developments in semiconductors detectors were reviewed. This review concentrated on thallium bromide (TlBr), cadmium zinc telluride (CdZnTe) and cadmium telluride (CdTe) crystals detectors. TlBr has higher stopping power compared to common semiconductor materials because it has the higher photoelectric and total attenuation coefficients over wide energy range from 100 keV to 1 MeV. CdTe and CdZnTe detectors have several attractive features for detecting X-ray and low energy gamma ray. Their relatively large band gaps lead to a relatively low leakage current and offer an excellent energy resolution at room temperature. A literature survey and bibliography was also included. (author)

  6. Robust half-metallicity at the zincblende CrTe(0 0 1) surfaces and its interface with ZnTe(0 0 1)

    International Nuclear Information System (INIS)

    Ahmadian, F.; Abolhassani, M.R.; Hashemifar, S.J.; Elahi, M.

    2010-01-01

    All electron full potential calculations based on spin density functional theory are performed to study cubic zincblende (ZB) and hexagonal NiAs structures of bulk CrTe, free (0 0 1) surfaces of ZB CrTe, and interface of ZB CrTe with ZnTe(0 0 1). The ferromagnetic NiAs structure is reported to be about 0.26 eV more stable than the ferromagnetic ZB phase while ZB CrTe is found to be a half-metallic ferromagnet with a half-metallic gap of about 2.90 eV. Thermodynamic stability of CrTe(0 0 1) surfaces are studied in the framework of ab-initio thermodynamic. The obtained phase diagram evidences more stability of the Te terminated surface compared with the Cr termination. We discuss that both Te and Cr ideal terminations of CrTe(0 0 1) retain bulk-like half-metallic property but with a reduced half-metallic gap compared with bulk value. The structural, electronic, magnetic, and band alignment properties of the ZB CrTe/ZnTe(0 0 1) interface are computed and a rather large minority valence band offset of about 1.09 eV is observed in this heterojunction.

  7. Intensification of electroluminescence of ZnSe(Te,O) crystals after gamma-irradiation

    International Nuclear Information System (INIS)

    Elmurotova, D.B.; Ibragimova, E. M.

    2006-01-01

    Full text: Wide-gap A 2 B 6 semiconductors are of special interest within eyeshot of energy-saving, on the base of which light sources are produced. Excitation voltage for injection electro luminescence (EL) corresponds to a transition potential barrier height, and wavelength determines the radiative transition energy and a recombination level position. The problem is in increasing the EL excitation efficiency, in particular the way of lowering the working voltage. The aim of the present work is experimental researches of possible amendment of EL characteristics of wide-gap ZnSe(Te,O) single crystals by influence of ionizing gamma-radiation on the electrical and optical active centers, and also exposure of possibility for creation of light emitting structures. We studied ZnSe crystals grown with Bridgman method at the Research Institute for Single Crystals (Kharkov, Ukraine). Diffusion doping with Te was used for creation of p-n transition in ZnSe crystals, that resulted in additional generation of Zn vacancies, treatment in oxidizing environment caused formation of extra Zn interstitials. Dominating evaporation of Zn, which is stipulated by a higher mobility of Zn i , leads to the increase of defect concentration of V Zn type, this process is vividly expressed in the crystals doped with Te that may be explained by the formation of stable V Zn Te Se Zn i associates. A few samples of each series were irradiated with≅ 1.25 MeV gamma-rays of 60 Co radioisotope source at the dose power of 10 Gy/s to the dose of 10 6 Gy at 300 K and compared with the non-irradiated reference samples. Spectra of EL were measured in the wave range of 200-900 nm at 300 K. A constant voltage in the range of 7-80 V was applied in straight and inverse direction for exposing hysteresis in the EL voltage-brightness dependences. The EL spectra include a wide band with the maximum at 600 nm. For the untreated samples the threshold voltage was 70-80 V, when the EL intensity began growing sharply

  8. Energy dispersive CdTe and CdZnTe detectors for spectral clinical CT and NDT applications

    Energy Technology Data Exchange (ETDEWEB)

    Barber, W.C., E-mail: william.barber@dxray.com [DxRay, Inc., Northridge, CA (United States); Interon AS, Asker (Norway); Wessel, J.C. [DxRay, Inc., Northridge, CA (United States); Interon AS, Asker (Norway); Nygard, E. [Interon AS, Asker (Norway); Iwanczyk, J.S. [DxRay, Inc., Northridge, CA (United States)

    2015-06-01

    We are developing room temperature compound semiconductor detectors for applications in energy-resolved high-flux single x-ray photon-counting spectral computed tomography (CT), including functional imaging with nanoparticle contrast agents for medical applications and non-destructive testing (NDT) for security applications. Energy-resolved photon-counting can provide reduced patient dose through optimal energy weighting for a particular imaging task in CT, functional contrast enhancement through spectroscopic imaging of metal nanoparticles in CT, and compositional analysis through multiple basis function material decomposition in CT and NDT. These applications produce high input count rates from an x-ray generator delivered to the detector. Therefore, in order to achieve energy-resolved single photon counting in these applications, a high output count rate (OCR) for an energy-dispersive detector must be achieved at the required spatial resolution and across the required dynamic range for the application. The required performance in terms of the OCR, spatial resolution, and dynamic range must be obtained with sufficient field of view (FOV) for the application thus requiring the tiling of pixel arrays and scanning techniques. Room temperature cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) compound semiconductors, operating as direct conversion x-ray sensors, can provide the required speed when connected to application specific integrated circuits (ASICs) operating at fast peaking times with multiple fixed thresholds per pixel provided the sensors are designed for rapid signal formation across the x-ray energy ranges of the application at the required energy and spatial resolutions, and at a sufficiently high detective quantum efficiency (DQE). We have developed high-flux energy-resolved photon-counting x-ray imaging array sensors using pixellated CdTe and CdZnTe semiconductors optimized for clinical CT and security NDT. We have also fabricated high

  9. Excitation states in type-II ZnSe/BeTe quantum wells

    International Nuclear Information System (INIS)

    Platonov, A.V.; Kochereshko, V.P.; Yakovlev, D.R.; Zehnder, U.; Ossau, W.; Fisher, F.; Litz, Th.; Waag, A.; Landwehr, G.

    1997-01-01

    We present an optical investigation of novel heterostructures based on beryllium chalcogenides with a type-I and type-II band alignment. In the type-II quantum well structures (ZnSe/BeTe) we observed a strong exciton transition involving an electron confined in the conduction band well and a hole localized in the valence band barrier (both in ZnSe layer). This transition is drastically broadened by the temperature increase due to enhanced exciton-acoustic phonon interaction. (author)

  10. Single crystal growth and structure refinements of CsMxTe2-xO6 (M = Al, Ga, Ge, In) pyrochlores

    International Nuclear Information System (INIS)

    Siritanon, Theeranun; Sleight, A.W.; Subramanian, M.A.

    2011-01-01

    Graphical abstract: Single crystals of CsM x Te 2-x O 6 pyrochlores with M = Al, Ga, Ge, and In have been grown and structure refinements indicate deviations from ideal stoichiometry presumably related to mixed valency of tellurium. Highlights: → Single crystals of CsM x Te 2-x O 6 pyrochlores with M = Al, Ga, Ge, and In have been grown. → Structure refinements from single crystal X-ray diffraction data confirm e structure. → Deviations from ideal stoichiometry suggest mixed valency of tellurium and hence conductivity. -- Abstract: Single crystals of CsM x Te 2-x O 6 pyrochlores with M = Al, Ga, Ge, and In have been grown from a TeO 2 flux. Structure refinements from single crystal X-ray diffraction data are reported. These results are used to discuss deviations from ideal stoichiometry that result in electronic conductivity presumably related to mixed valency of tellurium.

  11. Jahn-Teller coupling of Cr2+ ion with degenerate modes in ZnS, ZnSe, and ZnTe crystals: microscopic treatment

    International Nuclear Information System (INIS)

    Natadze, A.L.; Ryskin, A.I.

    1980-01-01

    The Jahn-Teller (JT) interaction energy is calculated for 5 T 2 and 5 E states of the Cr 2+ ion in ZnS, ZnSe, and ZnTe crystals. The calculations are made within the framework of a particular microscopic model of the crystal field in the distorted crystal (model of point-like exchange charges), the multimode interaction is taken into account. For the 5 T 2 term the energies of interaction with tetragonal and trigonal modes are of the same order of magnitude. This circumstance results in a small height of the barriers that separate various minima of the adiabatic potential and is responsible for the dynamic aspect of the static JT effect in these systems. (author)

  12. Observation of room temperature ferromagnetism in ZnTe:Cr films grown onto glass substrate by thermal evaporation method

    Energy Technology Data Exchange (ETDEWEB)

    Soundararajan, D; Mangalaraj, D; Nataraj, D [Thin Film Laboratory, Department of Physics, Bharathiar University, Coimbatore -641 046 (India); Dorosinskii, L [National Institute of Metrology (TUBITAK -UME), P.K. 54, 41470, Gebze -Kocaeli (Turkey); Santoyo-Salazar, J, E-mail: dorosins@ume.tubitak.gov.t [Universidad Nacional Autonoma de Mexico, Instituto de Investigaciones en Materiales, Mexico D.F. 04510 (Mexico)

    2009-03-01

    ZnTe and ZnTe:Cr films were prepared onto glass substrates using thermal evaporation method. Structural properties of the prepared samples were analyzed using X-ray diffractometer, and the presence of ZnCrTe phase was identified along with poor crystallinity. Composition analysis was done using XPS and the Cr content in the film was found to be 0.05 atomic percent. Transmittance spectra were recorded using UV-Vis spectrophotometer. The valence state of Cr in ZnTe:Cr film is determined to be +2 using electron spin resonance (ESR) spectroscopy. Magnetic moment data as a function of magnetic field were recorded using Superconducting Quantum Interference Device (SQUID) magnetometer at temperatures 5, 77 and 300 K. The results showed minority ferromagnetic behavior even at room temperature. Magnetic domains were observed using Magnetic Force Microscopy and the average value of domain size is 3.7 nm.

  13. The effects of deep level traps on the electrical properties of semi-insulating CdZnTe

    Energy Technology Data Exchange (ETDEWEB)

    Zha, Gangqiang; Yang, Jian; Xu, Lingyan; Feng, Tao; Wang, Ning; Jie, Wanqi [State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi' an (China)

    2014-01-28

    Deep level traps have considerable effects on the electrical properties and radiation detection performance of high resistivity CdZnTe. A deep-trap model for high resistivity CdZnTe was proposed in this paper. The high resistivity mechanism and the electrical properties were analyzed based on this model. High resistivity CdZnTe with high trap ionization energy E{sub t} can withstand high bias voltages. The leakage current is dependent on both the deep traps and the shallow impurities. The performance of a CdZnTe radiation detector will deteriorate at low temperatures, and the way in which sub-bandgap light excitation could improve the low temperature performance can be explained using the deep trap model.

  14. CdZnTe detectors for gamma-ray Burst ArcSecond Imaging and Spectroscopy (BASIS)

    International Nuclear Information System (INIS)

    Stahle, C.M.; Palmer, D.; Bartlett, L.M.; Parsons, A.; Shi Zhiqing; Lisse, C.M.; Sappington, C.; Cao, N.; Shu, P.; Gehrels, N.; Teegarden, B.; Birsa, F.; Singh, S.; Odom, J.; Hanchak, C.; Tueller, J.; Barthelmy, S.; Krizmanic, J.; Barbier, L.

    1996-01-01

    A CdZnTe detector array is being developed for the proposed gamma-ray Burst ArcSecond Imaging and Spectroscopy (BASIS) spaceflight mission to accurately locate gamma-ray bursts, determine their distance scale, and measure the physical characteristics of the emission region. Two-dimensional strip detectors with 100 μm pitch have been fabricated and wire bonded to readout electronics to demonstrate the ability to localize 60 and 122 keV gamma-rays to less than 100 μm. Radiation damage studies on a CdZnTe detector exposed to MeV neutrons showed a small amount of activation but no detector performance degradation for fluences up to 10 10 neutrons/cm 2 . A 1 x 1 in. CdZnTe detector has also been flown on a balloon payload at 115 000 ft in order to measure the CdZnTe background rates. (orig.)

  15. Surface Passivation of CdZnTe Detector by Hydrogen Peroxide Solution Etching

    Science.gov (United States)

    Hayes, M.; Chen, H.; Chattopadhyay, K.; Burger, A.; James, R. B.

    1998-01-01

    The spectral resolution of room temperature nuclear radiation detectors such as CdZnTe is usually limited by the presence of conducting surface species that increase the surface leakage current. Studies have shown that the leakage current can be reduced by proper surface preparation. In this study, we try to optimize the performance of CdZnTe detector by etching the detector with hydrogen peroxide solution as function of concentration and etching time. The passivation effect that hydrogen peroxide introduces have been investigated by current-voltage (I-V) measurement on both parallel strips and metal-semiconductor-metal configurations. The improvements on the spectral response of Fe-55 and 241Am due to hydrogen peroxide treatment are presented and discussed.

  16. Front-end electronics for the readout of CdZnTe sensors

    CERN Document Server

    Moraes, D; Rudge, A

    2006-01-01

    The CERN_DxCTA is a front-end ASIC optimized for the readout of CdZn Te sensors. The chip is implemented in 0.25 mum CMOS technology. The circuit consists of 128 channels equipped with a transimpedance amplifier followed by a gain-shaper stage with 20 ns peaking time and two discriminators, allowing two threshold settings. Each discriminator includes a 5-bit trim DAC and is followed by an 18-bit static ripple-counter. The channel architecture is optimized for the detector characteristics in order to achieve the best energy resolution at counting rates of up to 5 M counts/second. Complete evaluation of the circuit is presented using electronic pulses and Cd ZnTe pixel detectors.

  17. Laser ablation in CdZnTe crystal due to thermal self-focusing: Secondary phase hydrodynamic expansion

    Energy Technology Data Exchange (ETDEWEB)

    Medvid’, A., E-mail: mychko@latnet.lv [Riga Technical University, 3 Paula Valdena Str., LV-1048 Riga (Latvia); Mychko, A.; Dauksta, E. [Riga Technical University, 3 Paula Valdena Str., LV-1048 Riga (Latvia); Kosyak, V. [Sumy State University, 2, Rymskogo-Korsakova St., 40007 Sumy (Ukraine); Grase, L. [Riga Technical University, 3 Paula Valdena Str., LV-1048 Riga (Latvia)

    2016-06-30

    Highlights: • We found two laser induced threshold intensity for CdZnTe crystal. • The laser beam self-focusing lead to increase of intensity of laser radiation at exit surface. • Laser ablation is a result of Te inclusion hydrodynamic expansion. - Abstract: The present paper deals with the laser ablation in CdZnTe crystal irradiated by pulsed infrared laser. Two values of threshold intensities of the laser ablation were determined, namely of about 8.5 and 6.2 MW/cm{sup 2} for the incident and the rear surfaces, correspondingly. Lower intensity of the laser ablation for the rear surface is explained by thermal self-focusing of the laser beam in the CdZnTe crystal due to heating of Te inclusions with a following hydrodynamic expansion.

  18. Upconversion in rare earth ions doped TeO2-ZnO glass

    International Nuclear Information System (INIS)

    Mohanty, Deepak Kumar; Rai, Vineet Kumar

    2012-01-01

    The Er 3+ /Yb 3+ doped/codoped TeO 2 -ZnO glasses have been fabricated by conventional melt and quenching technique. The absorption spectra of the doped/codoped glasses have been performed. The visible upconversion emissions of both doped and codoped glasses have been observed using 808 nm diode laser excitation. The process involved in upconversion emissions has been discussed in detail. (author)

  19. Numerical Study of Thermal Stresses for the Semiconductor CdZnTe in Vertical Bridgman

    OpenAIRE

    Jamai , Hanen; El Ganaoui , M.; Sammouda , Habib; Pateyron , Bernard

    2015-01-01

    International audience; The aim of this work is to present a numerical simulation of thermal stress in directional solidification of CdZnTe in vertical Bridgman apparatus. Especial attention will be attributed to show the importance of cooling temperature and time's growth affecting the thermal stress. Furthermore, we will focus on investigating the thermal stress' components and their distribution in crystal, which gives a detailed about the stress distribution and consequently on the distri...

  20. Charge loss between contacts of CdZnTe pixel detectors

    International Nuclear Information System (INIS)

    Bolotnikov, A.E.; Cook, W.R.; Harrison, F.A.; Wong, A.-S.; Schindler, S.M.; Eichelberger, A.C.

    1999-01-01

    The surface of Cd 1-x Zn x Te (CZT) material has high resistivity but is not a perfect dielectric. Even a small surface conductivity can affect the electric field distribution, and therefore, the charge collection efficiency of a CZT pixel detector. The paper describes studies of this phenomenon for several contact configurations made on a single CZT detector. We have determined the maximum inter-contact separation at which the surface inter-pixel charge loss can be neglected. (author)

  1. Influence of hydrostatic pressure on nuclear radiation detector's properties based on semiconductor alloy CdZnTe

    International Nuclear Information System (INIS)

    Kutnij, V.E.; Kutnij, D.V.; Rybka, A.V.; Nakonechnyj, D.V.; Babun, A.V.

    2003-01-01

    The influence of hydrostatic pressure on properties of CdZnTe semiconductor detectors (Cd-50,Zn-2,Te-48 mas.%, 5 centre dot 5 centre dot 2 mm) was investigated. Were considered different types of hydrostatic treatment at 100 MPa, second hydrostatic treatment at 100 MPa and 200 MPa. Hydrostatic pressure influence on detectors electric resistance, J-V characteristics and spectrometric parameters was determined

  2. Investigation of ZnTe thin films grown by Pulsed Laser Deposition method

    International Nuclear Information System (INIS)

    Kotlyarchuk, B.; Savchuk, V.

    2007-01-01

    This paper is devoted to optimization of the Pulsed Laser Deposition (PLD) growth condition of ZnTe films on various substrates and subsequent investigation of relevant parameters of growth process, structural, optical and electrical properties of grown films. Studies of the effect of growth parameters on the structural quality and properties of grown films were carried out. X-ray diffraction measurements showed that the ZnTe films, which have been deposited at optimal substrate temperatures, were characterized by a (111) preferred orientation with large average grain size. The optical transmission and reflectance in the energy range 1.5-5.5 eV for films grown at various substrate temperatures were measured. We calculated the variation in the absorption coefficient with the photon energy from the transmittance spectrum for samples grown at various substrate temperatures. Obtained data were analyzed and the value of the absorption coefficient, for allowed direct transitions, has been determined as a function of photon energy. We found that the undoped ZnTe films, which were grown by the PLD method, are typically p-type and possess resistivity in the range of 10 3 Ωcm at room temperature. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  3. Primary study of Monte Carlo simulation on CdZnTe nuclear detector

    International Nuclear Information System (INIS)

    Ren Shaojun; Sang Wenbin; Jin Wei; Li Wanwan; Zhang Qi; Min Jiahua

    2004-01-01

    The Monte Carlo simulation software is developed based on the operating principle of CdZnTe detector, the randomicity of γ ray reaction in the detector and the statistic rule of the amount of electron-hole pairs produced. First, the reaction depth of photons is calculated based on the disintegration rule. Secondly, the reaction section of every reaction is estimated and the reaction probability of the three atoms in CZT and the probability of every reaction of every atom are calculated. Based on these probabilities, the category of atoms and the type of reactions of a photon reacting with the detector are determined and the amount of electron-hole pairs produced by the photon is obtained. From the reaction depth and the amount of electron-hole pairs produced, the amount of charge collected can be calculated. The response energy spectra of γ ray in the CdZnTe detector are simulated by using the Monte Carlo software developed. The simulation results are well comparable with the data of the real CdZnTe devices. In addition, the ideal thickness of the device, which is of maximum detecting efficiency, is also obtained based on the analysis over the relationship between the thickness and the efficiency, assuming the device to be under the radiation of 57 Co source

  4. Performance evaluation of a hand-held, semiconductor (CdZnTe)-based gamma camera

    CERN Document Server

    Abe, A; Lee, J; Oka, T; Shizukuishi, K; Kikuchi, T; Inoue, T; Jimbo, M; Ryuo, H; Bickel, C

    2003-01-01

    We have designed and developed a small field of view gamma camera, the eZ SCOPE, based on use of a CdZnTe semiconductor. This device utilises proprietary signal processing technology and an interface to a computer-based imaging system. The purpose of this study was to evaluate the performance of the eZ scope in comparison with currently employed gamma camera technology. The detector is a single wafer of 5-mm-thick CdZnTe that is divided into a 16 x 16 array (256 pixels). The sensitive area of the detector is a square of dimension 3.2 cm. Two parallel-hole collimators are provided with the system and have a matching (256 hole) pattern to the CdZnTe detector array: a low-energy, high-resolution parallel-hole (LEHR) collimator fabricated of lead and a low-energy, high-sensitivity parallel-hole (LEHS) collimator fabricated of tungsten. Performance measurements and the data analysis were done according to the procedures of the NEMA standard. We also studied the long-term stability of the system with continuous use...

  5. Characterization and Applications of a CdZnTe-Based Gamma-Ray Imager

    Science.gov (United States)

    Galloway, Michelle Lee

    a 137Cs at a 20 m distance with 20 seconds of observation time is estimated to be ˜0.2 mCi in spectral mode and ˜20 mCi in Compton imaging mode. These performance parameters fulfilled the requirements of the nuclear security program. Following the Fukushima Dai-ichi Nuclear Power Plant accident of March, 2011, efficient methods to assess levels of radioactive contamination over large areas are needed to aid in clean-up efforts. Although a field study was not initially intended for the HEMI prototype, its portability, low mass, and low power requirements made it a good candidate to test Compton imaging from an aerial platform. The instrument was brought to Japan in August, 2013, allowing for the first test of a Compton imager from a helicopter. The instrument and detectors proved reliable and performed well under high temperature, high humidity, and vibrations. Single-detector hit energy resolutions ranged from 2.5 - 2.8% FWHM at 662 keV. The field testing of the HEMI instrument in Fukushima revealed areas of higher activity of cesium among a diffuse background through aerial-based countrate mapping and through ground measurements. Although the Compton reconstructed events were dominated by random coincidences, preliminary Compton imaging results are promising. A future mission in medium-energy gamma-ray astrophysics would allow for many scientific advancements, e.g., a possible explanation for the excess positron emission from the Galactic Center, a better understanding of nucleosynthesis and explosion mechanisms in Type Ia supernovae, and a look at the physical forces at play in compact objects such as black holes and neutron stars. A next-generation telescope requires good energy resolution, good angular resolution, and high sensitivity in order to achieve these objectives. Large-volume CdZnTe detectors are an attractive candidate for a future instrument because of their good absorption, simple design, and minimal or no cooling requirements. Using the

  6. Band alignment and charge transfer predictions of ZnO/ZnX (X = S, Se or Te) interfaces applied to solar cells: a PBE+U theoretical study.

    Science.gov (United States)

    Flores, Efracio Mamani; Gouvea, Rogério Almeida; Piotrowski, Maurício Jeomar; Moreira, Mário Lucio

    2018-02-14

    The engineering of semiconductor materials for the development of solar cells is of great importance today. Two topics are considered to be of critical importance for the efficiency of Grätzel-type solar cells, the efficiency of charge separation and the efficiency of charge carrier transfer. Thus, one research focus is the combination of semiconductor materials with the aim of reducing charge recombination, which occurs by spatial charge separation. From an experimental point of view, the combining of materials can be achieved by decorating a core with a shell of another material resulting in a core-shell system, which allows control of the desired photoelectronic properties. In this context, a computational simulation is mandatory for the atomistic understanding of possible semiconductor combinations and for the prediction of their properties. Considering the construction of ZnO/ZnX (X = S, Se or Te) interfaces, we seek to investigate the electronic influence of the shell (ZnX) on the core (ZnO) and, consequently, find out which of the interfaces would present the appropriate properties for (Grätzel-type) solar cell applications. To perform this study, we have employed density functional theory (DFT) calculations, considering the Perdew-Burke-Ernzerhof (PBE) functional. However, it is well-known that plain DFT fails to describe strong electronic correlated materials where, in general, an underestimation of the band gap is obtained. Thus, to obtain the correct description of the electronic properties, a Hubbard correction was employed, i.e. PBE+U calculations. The PBE+U methodology provided the correct electronic structure properties for bulk ZnO in good agreement with experimental values (99.4%). The ZnO/ZnX interfaces were built and were composed of six ZnO layers and two ZnX layers, which represents the decoration process. The core-shell band gap was 2.2 eV for ZnO/ZnS, ∼1.71 eV for ZnO/ZnSe and ∼0.95 eV for ZnO/ZnTe, which also exhibited a type-II band

  7. Influence of Te and Se doping on ZnO films growth by SILAR method

    Science.gov (United States)

    Güney, Harun; Duman, Ćaǧlar

    2016-04-01

    The AIP Successive ionic layer adsorption and reaction (SILAR) is an economic and simple method to growth thin films. In this study, SILAR method is used to growth Selenium (Se) and Tellurium (Te) doped zinc oxide (ZnO) thin films with different doping rates. For characterization of the films X-ray diffraction (XRD), absorbance and scanning electron microscopy (SEM) are used. XRD results are showed well-defined strongly (002) oriented crystal structure for all samples. Also, absorbance measurements show, Te and Se concentration are proportional and inversely proportional with band gap energy, respectively. SEM measurements show that the surface morphology and thickness of the material varied with Se and/or Te and varying concentrations.

  8. Influence of Te and Se doping on ZnO films growth by SILAR method

    International Nuclear Information System (INIS)

    Güney, Harun; Duman, Çağlar

    2016-01-01

    The AIP Successive ionic layer adsorption and reaction (SILAR) is an economic and simple method to growth thin films. In this study, SILAR method is used to growth Selenium (Se) and Tellurium (Te) doped zinc oxide (ZnO) thin films with different doping rates. For characterization of the films X-ray diffraction (XRD), absorbance and scanning electron microscopy (SEM) are used. XRD results are showed well-defined strongly (002) oriented crystal structure for all samples. Also, absorbance measurements show, Te and Se concentration are proportional and inversely proportional with band gap energy, respectively. SEM measurements show that the surface morphology and thickness of the material varied with Se and/or Te and varying concentrations.

  9. Influence of Te and Se doping on ZnO films growth by SILAR method

    Energy Technology Data Exchange (ETDEWEB)

    Güney, Harun, E-mail: harunguney25@hotmail.com [Department of Electric and Energy, Vocation High School, Ağrı İbrahim Çeçen University (Turkey); Duman, Çağlar, E-mail: caglarduman@erzurum.edu.tr [Department of Electrical and Electronic Engineering, Faculty of Engineering, Erzurum Technical University (Turkey)

    2016-04-18

    The AIP Successive ionic layer adsorption and reaction (SILAR) is an economic and simple method to growth thin films. In this study, SILAR method is used to growth Selenium (Se) and Tellurium (Te) doped zinc oxide (ZnO) thin films with different doping rates. For characterization of the films X-ray diffraction (XRD), absorbance and scanning electron microscopy (SEM) are used. XRD results are showed well-defined strongly (002) oriented crystal structure for all samples. Also, absorbance measurements show, Te and Se concentration are proportional and inversely proportional with band gap energy, respectively. SEM measurements show that the surface morphology and thickness of the material varied with Se and/or Te and varying concentrations.

  10. Quality improvement of CdZnTe single crystal by ultrasound processing

    Science.gov (United States)

    Lisiansky, M.; Berner, A.; Korchnoy, V.

    2017-06-01

    Intrinsic defects and contaminations removal from the undoped p-type Cd0.96Zn0.04Te single crystals has been achieved by the ultrasound vibration processing at the room temperature. Surface analysis based on Auger Electron Spectroscopy, Energy Dispersive Spectroscopy, and Scanning Electron Spectroscopy shows a significant reconstruction of the crystal surface after processing, namely, the appearance of numerous "volcano craters" and triangle-shaped defects with a typical size of 0.2-5.0 μm. Elemental analysis of these defects shows that they are Te inclusions emerged on the surface. The regular crystal surface outside the defects also displays a considerable enrichment by Te. Distinct presence of copper is found in both the thin surface layer and in the defects emerged on the surface. The surface reconstruction is associated with a remarkable change in the bulk material properties, electrical (an increase in the resistivity by a factor of ∼6) and optical (an IR transmittance increase). A post-polishing following the ultrasound processing makes the CdZnTe material more stable and reliable for a wide range of device applications.

  11. Self-Assembled Formation of Well-Aligned Cu-Te Nano-Rods on Heavily Cu-Doped ZnTe Thin Films

    Science.gov (United States)

    Liang, Jing; Cheng, Man Kit; Lai, Ying Hoi; Wei, Guanglu; Yang, Sean Derman; Wang, Gan; Ho, Sut Kam; Tam, Kam Weng; Sou, Iam Keong

    2016-11-01

    Cu doping of ZnTe, which is an important semiconductor for various optoelectronic applications, has been successfully achieved previously by several techniques. However, besides its electrical transport characteristics, other physical and chemical properties of heavily Cu-doped ZnTe have not been reported. We found an interesting self-assembled formation of crystalline well-aligned Cu-Te nano-rods near the surface of heavily Cu-doped ZnTe thin films grown via the molecular beam epitaxy technique. A phenomenological growth model is presented based on the observed crystallographic morphology and measured chemical composition of the nano-rods using various imaging and chemical analysis techniques. When substitutional doping reaches its limit, the extra Cu atoms favor an up-migration toward the surface, leading to a one-dimensional surface modulation and formation of Cu-Te nano-rods, which explain unusual observations on the reflection high energy electron diffraction patterns and apparent resistivity of these thin films. This study provides an insight into some unexpected chemical reactions involved in the heavily Cu-doped ZnTe thin films, which may be applied to other material systems that contain a dopant having strong reactivity with the host matrix.

  12. CdZnTe Image Detectors for Hard-X-Ray Telescopes

    Science.gov (United States)

    Chen, C. M. Hubert; Cook, Walter R.; Harrison, Fiona A.; Lin, Jiao Y. Y.; Mao, Peter H.; Schindler, Stephen M.

    2005-01-01

    Arrays of CdZnTe photodetectors and associated electronic circuitry have been built and tested in a continuing effort to develop focal-plane image sensor systems for hard-x-ray telescopes. Each array contains 24 by 44 pixels at a pitch of 498 m. The detector designs are optimized to obtain low power demand with high spectral resolution in the photon- energy range of 5 to 100 keV. More precisely, each detector array is a hybrid of a CdZnTe photodetector array and an application-specific integrated circuit (ASIC) containing an array of amplifiers in the same pixel pattern as that of the detectors. The array is fabricated on a single crystal of CdZnTe having dimensions of 23.6 by 12.9 by 2 mm. The detector-array cathode is a monolithic platinum contact. On the anode plane, the contact metal is patterned into the aforementioned pixel array, surrounded by a guard ring that is 1 mm wide on three sides and is 0.1 mm wide on the fourth side so that two such detector arrays can be placed side-by-side to form a roughly square sensor area with minimal dead area between them. Figure 1 shows two anode patterns. One pattern features larger pixel anode contacts, with a 30-m gap between them. The other pattern features smaller pixel anode contacts plus a contact for a shaping electrode in the form of a grid that separates all the pixels. In operation, the grid is held at a potential intermediate between the cathode and anode potentials to steer electric charges toward the anode in order to reduce the loss of charges in the inter-anode gaps. The CdZnTe photodetector array is mechanically and electrically connected to the ASIC (see Figure 2), either by use of indium bump bonds or by use of conductive epoxy bumps on the CdZnTe array joined to gold bumps on the ASIC. Hence, the output of each pixel detector is fed to its own amplifier chain.

  13. Theoretical Determination of Optimal Material Parameters for ZnCdTe/ZnCdSe Quantum Dot Intermediate Band Solar Cells

    Science.gov (United States)

    Imperato, C. M.; Ranepura, G. A.; Deych, L. I.; Kuskovsky, I. L.

    2018-03-01

    Intermediate band solar cells (IBSCs) are designed to enhance the photovoltaic efficiency significantly over that of a single-junction solar cell as determined by the Shockley-Queisser limit. In this work we present calculations to determine parameters of type-II Zn1-xCdxTe/Zn1-yCdySe quantum dots (QDs) grown on the InP substrate suitable for IBSCs. The calculations are done via the self-consistent variational method, accounting for the disk form of the QDs, presence of the strained ZnSe interfacial layer, and under conditions of a strain-free device structure. We show that to achieve the required parameters relatively thick QDs are required. Barriers must contain Cd concentration in the range of 35-44%, while Cd concentration in QD can vary widely from 0% to 70%, depending on their thickness to achieve the intermediate band energies in the range of 0.50-0.73 eV. It is also shown that the results are weakly dependent on the barrier thickness.

  14. Thermal analyzes of phosphate glasses doped with Yb{sup 3+} and ZnTe nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Freitas, A.M.; Bell, M.J.V. [Laboratório de Espectroscopia de Materiais, Departamento de Física, ICE, Universidade Federal de Juiz de Fora, 36036-330 Juiz de Fora, MG (Brazil); Anjos, V., E-mail: virgilio@fisica.ufjf.br [Laboratório de Espectroscopia de Materiais, Departamento de Física, ICE, Universidade Federal de Juiz de Fora, 36036-330 Juiz de Fora, MG (Brazil); Pinheiro, A.S.; Dantas, N.O. [Laboratório de Novos Materiais Isolantes e Semicondutores (LNMIS), Instituto de Física da Universidade Federal de Uberlândia, CP 593, CEP 38400-902 Uberlândia, MG (Brazil)

    2016-01-15

    This work studies the thermal properties of a glass matrix called PZABP doped with ZnTe and co-doped with Yb{sup 3+} with nominal composition 60P{sub 2}O{sub 5}, 15ZnO, 5Al{sub 2}O{sub 3}, 10BaO, and 10 PbO (mol%). The presence of ZnTe results in the formation of nanocrystals which are evidenced by optical absorption, X-Ray Diffraction (XRD) and Raman scattering. Thermal lens and Volumetric Heat Capacity techniques were used to investigate thermal diffusivity (D), thermal conductivity (K) and optical path variation with temperature (ds/dT). The outcomes indicate high values for the thermal diffusivity and a relatively small thermal conductivity, i.e., around 2.6×10{sup −3} cm{sup 2}/s and 3.4×10{sup −3} W cm{sup −1} K{sup −1}, respectively. On the other hand, a low ds/dT value, 1.0×10{sup −6} K{sup −1}, was obtained as required for an active laser medium. Moreover, it has been observed that the matrix allows high concentration of dopants without compromising its thermal properties. As a result, PZABP glasses may be pointed out as a promising material to applications in high power photonics devices. - Highlights: • UV transparentglass matrix (PZABP) is used for Yb{sup 3+}doping. • Bulk like and quantum dots like crystals of ZnTe were grown. • Thermal properties point out PZABP as a material to high power photonics devices.

  15. Adsorption Isotherms of Cs+, Co2+, Zn2+ and Eu3+ on Zirconium Vanadate Ion-Exchanger

    International Nuclear Information System (INIS)

    Shady, S.A.; El-Ashery, S.M.; El-Naggar, I.M.

    2009-01-01

    Zirconium vanadate had been prepared by the dropwise addition of 0.1 M sodium vanadate and 0.1 M zirconyl chloride by molar ratio of zirconium/vanadium 2. Exchange isotherms for Cs + /H + , Co 2+ /H + ,Zn 2+ /H + and Eu 3+ /H + have been determined at 25, 40 and 60 degree C. Besides, it was proved that cesium, cobalt, zinc and europium are chemically adsorbed. Moreover, the heat of adsorption of these ions on zirconium vanadate had been calculated and indicated that zirconium vanadate is of endothermic behavior towards these ions

  16. Effect of electron transport properties on unipolar CdZnTe radiation detectors: LUND, SpectrumPlus, and Coplanar Grid

    International Nuclear Information System (INIS)

    James, Ralph B.

    2000-01-01

    Device simulations of (1) the laterally-contacted-unipolar-nuclear detector (LUND), (2) the SpectrumPlus, (3) and the coplanar grid made of Cd 0.9 Zn 0.1 Te (CZT) were performed for 137 Cs irradiation by 662.15 keV gamma-rays. Realistic and controlled simulations of the gamma-ray interactions with the CZT material were done using the MCNP4B2 Monte Carlo program, and the detector responses were simulated using the Sandia three-dimensional multielectrode simulation program (SandTMSP). The simulations were done for the best and the worst expected carrier nobilities and lifetimes of currently commercially available CZT materials for radiation detector applications. For the simulated unipolar devices, the active device volumes were relatively large and the energy resolutions were fairly good, but these performance characteristics were found to be very sensitive to the materials properties. The internal electric fields, the weighting potentials, and the charge induced efficiency maps were calculated to give insights into the operation of these devices

  17. Theoretical studies on a TeO2/ZnO/diamond-layered structure for zero TCD SAW devices

    International Nuclear Information System (INIS)

    Dewan, Namrata; Sreenivas, K; Gupta, Vinay

    2008-01-01

    High-frequency surface acoustic wave (SAW) devices based on diamond substrate are useful because of their very high SAW velocity. In the present work, SAW propagation characteristics, such as phase velocity, coupling coefficient and temperature coefficient of delay (TCD) of a TeO 2 /ZnO/diamond-layered structure, are examined using theoretical calculations. The ZnO/diamond bi-layer structure is found to exhibit a high positive TCD value. A zero TCD device structure is obtained after integration with a TeO 2 over layer having a negative TCD value. Introduction of a non-piezoelectric TeO 2 over layer on the bi-layer structure (ZnO/diamond) increases the coupling coefficient. A relatively low thickness of TeO 2 thin film (∼(1.6–3.1) × 10 −3 λ) is required to achieve temperature-stable SAW devices based on diamond

  18. Theoretical studies on a TeO2/ZnO/diamond-layered structure for zero TCD SAW devices

    Science.gov (United States)

    Dewan, Namrata; Sreenivas, K.; Gupta, Vinay

    2008-08-01

    High-frequency surface acoustic wave (SAW) devices based on diamond substrate are useful because of their very high SAW velocity. In the present work, SAW propagation characteristics, such as phase velocity, coupling coefficient and temperature coefficient of delay (TCD) of a TeO2/ZnO/diamond-layered structure, are examined using theoretical calculations. The ZnO/diamond bi-layer structure is found to exhibit a high positive TCD value. A zero TCD device structure is obtained after integration with a TeO2 over layer having a negative TCD value. Introduction of a non-piezoelectric TeO2 over layer on the bi-layer structure (ZnO/diamond) increases the coupling coefficient. A relatively low thickness of TeO2 thin film (~(1.6-3.1) × 10-3λ) is required to achieve temperature-stable SAW devices based on diamond.

  19. Loss of 51Cr, 54Mn, 57Co, 59Fe, 65Zn and 134Cs by the mussel Mytilus

    International Nuclear Information System (INIS)

    Dahlgaard, H.

    1981-01-01

    The loss of 51 Cr, 54 Mn, 57 Co, 59 Fe, 65 Zn and 134 Cs from naturally growing mussels (Mytilus edulis) was followed in a temperate estuarine environment -a Danish fjord - by individual whole-body countings on a Ge(Li) detector. The mussels accumulated the radionuclides in the laboratory from food and water and were brought back to their natural environment in small plastic cages. The loss curves for 12 animals from July - August 1979 until November 1979 (20-5 0 C) were resolved in a slow compartment with 140-215 d biological half-life for 57 Co, 54 Mn, 51 Cr and 59 Fe, and 87 d for 65 Zn, and a medium compartment with a biological half-life of 4-7 d for all nuclides. The long-lived compartments of 65 Zn, 57 Co and 54 Mn were followed in four individual animals from August 1979 to August 1980. For 65 Zn a seasonal effect was clearly demonstrated as the biological half-life was prolonged from 87 d during autumn 1979 to 347 d in the cold period (0-5 0 C), whereas it decreased again during the summer of 1980. For 57 Co and 54 Mn the long-term excretion study revealed an extra-slow compartment, as the long half-life in the cold period (approximately 600 d) persisted during the summer of 1980. This is explained by association with the shell. (author)

  20. CdTe deposition by successive ionic layer adsorption and reaction (SILAR) technique onto ZnO nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Salazar, Raul; Delamoreanu, Alexandru; Saidi, Bilel; Ivanova, Valentina [CEA, LETI, MINATEC Campus, 17 Rue des Martyrs, 38054, Grenoble (France); Levy-Clement, Claude [CNRS, Institut de Chimie et des Materiaux de Paris-Est, 94320, Thiais (France)

    2014-09-15

    In this study is reported CdTe deposition by Successive Ionic Layer Adsorption and reaction (SILAR) at room temperature onto ZnO nanowires (NWs). The as-deposited CdTe layer exhibits poor crystalline quality and not well defined optical transition which is probably result of its amorphous nature. The implementation of an annealing step and chemical treatment by CdCl{sub 2} to the classical SILAR technique improved significantly the CdTe film quality. The XRD analysis showed that the as treated layers are crystallized in the cubic zinc blende structure. The full coverage of ZnO nanowires and thickness of the CdTe shell, composed of small crystallites, was confirmed by STEM and TEM analysis. The layer thickness could be controlled by the number of SILAR cycles. The sharper optical transitions for the annealed and CdCl{sub 2} treated heterostructures additionally proves the enhancement of the layer crystalline quality. For comparison CdTe was also deposited by close space sublimation (CSS) method onto ZnO nanowires. It is shown that the SILAR deposited CdTe exhibits equal crystalline and optical properties to that prepared by CSS. These results demonstrate that SILAR technique is more suitable for conformal thin film deposition on nanostructures. CdTe extremely thin film deposited by SILAR method onto ZnO nanowire. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  1. CdTe deposition by successive ionic layer adsorption and reaction (SILAR) technique onto ZnO nanowires

    International Nuclear Information System (INIS)

    Salazar, Raul; Delamoreanu, Alexandru; Saidi, Bilel; Ivanova, Valentina; Levy-Clement, Claude

    2014-01-01

    In this study is reported CdTe deposition by Successive Ionic Layer Adsorption and reaction (SILAR) at room temperature onto ZnO nanowires (NWs). The as-deposited CdTe layer exhibits poor crystalline quality and not well defined optical transition which is probably result of its amorphous nature. The implementation of an annealing step and chemical treatment by CdCl 2 to the classical SILAR technique improved significantly the CdTe film quality. The XRD analysis showed that the as treated layers are crystallized in the cubic zinc blende structure. The full coverage of ZnO nanowires and thickness of the CdTe shell, composed of small crystallites, was confirmed by STEM and TEM analysis. The layer thickness could be controlled by the number of SILAR cycles. The sharper optical transitions for the annealed and CdCl 2 treated heterostructures additionally proves the enhancement of the layer crystalline quality. For comparison CdTe was also deposited by close space sublimation (CSS) method onto ZnO nanowires. It is shown that the SILAR deposited CdTe exhibits equal crystalline and optical properties to that prepared by CSS. These results demonstrate that SILAR technique is more suitable for conformal thin film deposition on nanostructures. CdTe extremely thin film deposited by SILAR method onto ZnO nanowire. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  2. Variable dimensionality and framework found in a series of quaternary zinc selenites, A2Zn3(SeO3)4·xH2O (A = Na, Rb, and Cs; 0≤x≤1) and Cs2Zn2(SeO3)3·2H2O

    International Nuclear Information System (INIS)

    Lü, Minfeng; Jo, Hongil; Oh, Seung-Jin; Ok, Kang Min

    2017-01-01

    Five new alkali metal zinc selenites, A 2 Zn 3 (SeO 3 ) 4 ·xH 2 O (A = Na, Rb, and Cs; 0≤x≤1) and Cs 2 Zn 2 (SeO 3 ) 3 ·2H 2 O have been synthesized by heating a mixture of ZnO, SeO 2 and A 2 CO 3 (A = Na, Rb, and Cs), and characterized by X-ray diffraction (XRD) and spectroscopic analyses techniques. All of the reported materials revealed a rich structural chemistry with different frameworks and connection modes of Zn 2+ . While Rb 2 Zn 3 (SeO 3 ) 4 and Cs 2 Zn 3 (SeO 3 ) 4 ·H 2 O revealed three-dimensional frameworks consisting of isolated ZnO 4 tetrahedra and SeO 3 polyhedra, Na 2 Zn 3 (SeO 3 ) 4 , Cs 2 Zn 3 (SeO 3 ) 4 , and Cs 2 Zn 2 (SeO 3 ) 3 ·2H 2 O contained two-dimensional [Zn 3 (SeO 3 ) 4 ] 2- layers. Specifically, whereas isolated ZnO 4 tetrahedra and SeO 3 polyhedra are arranged into two-dimensional [Zn 3 (SeO 3 ) 4 ] 2- layers in two cesium compounds, circular [Zn 3 O 10 ] 14- chains and SeO 3 linkers are formed in two-dimensional [Zn 3 (SeO 3 ) 4 ] 2- layers in Na 2 Zn 3 (SeO 3 ) 4 . Close structural examinations suggest that the size of alkali metal is significant in determining the framework geometry as well as connection modes of transition metal cations. - Graphical abstract: Variable dimensions and frameworks were found in a series of quaternary zinc selenites, A 2 Zn 3 (SeO 3 ) 4 (A = Na, Rb and Cs). - Highlights: • Five novel quaternary zinc selenites are synthesized. • All the selenites with different structures contain polarizable d 10 and lone pair cations. • The size of alkali metal cations is significant in determining the framework geometry.

  3. Preferential adsorption of volatile hydrocarbons on high surface area chalcogels KMBiTe 3 (M = Cr, Zn, Fe)

    KAUST Repository

    Edhaim, Fatimah

    2017-12-21

    Three chalcogels KCrBiTe3, KZnBiTe3, and KFeBiTe3 were synthesized by the sol–gel metathesis route. K+ and the transition metal cations Cr2+, Zn2+ or Fe2+ connect [BiTe3]3− anions to form amorphous black compounds. Supercritical drying of the black gels produced porous materials with BET surface areas of 230 m2/g (KCrBiTe3), 450 m2/g (KZnBiTe3) and 514 m2/g (KFeBiTe3). The adsorption properties of the resulting chalcogenide aerogels or chalcogels have been studied using volatile organic hydrocarbons (VOCs) and gases as adsorptives. The results show preferential adsorption of toluene vapor over cyclohexane vapor. The adsorption capacity toward toluene is 5.02 mmol/g for KCrBiTe3, 5.58 mmol/g for KZnBiTe3 and 7.89 mmol/g for KFeBiTe3. Preferential adsorption of CO2 over CH4 or H2 was observed for the chalcogels: KCrBiTe3 (CO2/H2: 175, CO2/CH4: 50), KZnBiTe3 (CO2/H2: 180 and CO2/CH4: 60) and KFeBiTe3 (CO2/H2: 225 and CO2/CH4: 65).

  4. Operation of CdZnTe Semiconductor Detectors in Liquid Scintillator for the COBRA Experiment

    International Nuclear Information System (INIS)

    Oldorf, Christian

    2015-08-01

    COBRA, the Cadmium-Zinc-Telluride O-neutrino double-Beta Research Apparatus, is an experiment aiming for the measurement of the neutrinoless double beta decay with several isotopes, in particular 116 Cd, 106 Cd and 130 Te. A highly granular large scale experiment with about 400 kg of CdZnTe semiconductor detectors is currently under development. To provide evidence for the neutrinoless double beta decay of 116 Cd, a background rate in the order of 10 -3 counts/keV/kg/a is needed to achieve the required half-life sensitivity of at least 2 . 10 26 years. To reach this target, the detectors have to be operated in a highly pure environment, shielded from external radiation. Liquid scintillator is a promising candidate as a circum fluent replacement for the currently used lacquer. Next to the function as highly pure passivation material, liquid scintillator also acts as a neutron shield and active veto for external gammas. Within this thesis, the design, construction and assembly of a test set-up is described. The operation of four CdZnTe detectors after several years of storage in liquid scintillator is demonstrated. Next to extensive material compatibility tests prior to the assembly, the commissioning of the set-up and the characterization of the detectors are shown. Finally, results concerning the background reduction capability of liquid scintillator and the detection of cosmic muons are presented and compared to a Monte Carlo simulation.

  5. Study of CdTe:Cl and CdZnTe detectors for medical multi-slices X-ray Computed Tomography

    International Nuclear Information System (INIS)

    Ricq, St.

    1999-01-01

    The application of CdTe and CdZnTe detectors to medical X-ray Computed Tomography have been investigated. Different electrodes (Au, Pt, In) have been deposited on CdZnTe HPBM and on CdTe:ClTHM. Their injection properties have been determined with Current-Voltage characteristics. Under X-ray in CT conditions, injection currents measurements reveal trapped carriers space-charges formation. The same way, the comparisons of the responses to X-beam cut-off with various injection possibilities enable to follow the space-charges evolutions and then to determine the predominant traps types. Nevertheless, both hole and electron traps are responsible for the memory effect e.g. the currents levels dependence with irradiation history. This effect is noticed in particular on responses to fast flux variations that simulate scanner's conditions. Trap levels probably corresponding to native defects are responsible for these limitations. In order to make such detectors suitable for X-ray Computed Tomography, significant progresses in CdTe for CdZnTe crystal growth with an important defects densities reduction (factor 10), or possibly counting mode operation, seem necessary. (author)

  6. Electrical properties of V205-ZnO-TeO2 glasses. V205-ZnO-TeO2 kei garasu no denki dendo

    Energy Technology Data Exchange (ETDEWEB)

    Mori, H; Igarashi, J; Sakata, H [Tokai Univ., Tokyo (Japan). Faculty of Engineering

    1993-12-01

    It is known that glasses contained Transition Metal Oxide (TMO) such as V2O5 show a semi-conductivity, those conductive mechanism has been understood according to the Small Polaron Hopping (SPH) theory developed by Mott and Austin. Authors investigated the glass formation regions, de-conductivity([sigma]) and the conductive mechanism for V2O5-Bi2O3-TeO2 glasses as a tellurite glass containing the TMO. It was clarified that the adiabatic SPH and the non-adiabatic SPH are satisfied for the glasses with V2O5>50 mol% and V2O5<50 mol%, respectively. In this study, the electrical properties of V2O5-ZnO-TeO2 glasses were investigated, and the SPH conductions were considered from the standpoints of the polaron band width J, carrier mobility [mu], carrier density Nc. The conductive mechanism and dependence of V2O5 density on Seebeck coefficients Q were clarified in which a formation region of V2O5 is from 30 to 60 mol%. 40 refs., 9 figs., 2 tabs.

  7. Cs-K-Te photo cathodes: a promising electron source for free-electron lasers

    NARCIS (Netherlands)

    Bisero, D.; Bisero, D.; van Oerle, B.M.; van Oerle, B.M.; Ernst, G.J.; Verschuur, Jeroen W.J.; Witteman, W.J.

    1998-01-01

    The characteristics of Cs–K–Te photo-cathodes when used in a photo-cathode linear accelerator will be presented together with a short review of their photo-emissive properties. The cathodes have been illuminated by light pulses obtained by frequency quadrupling the light of a Nd:YLF laser. The

  8. A CdZnTe slot-scanned detector for digital mammography

    International Nuclear Information System (INIS)

    Mainprize, James G.; Ford, Nancy L.; Yin Shi; Gordon, Eli E.; Hamilton, William J.; Tuemer, Tuemay O.; Yaffe, Martin J.

    2002-01-01

    A new high-resolution detector has been developed for use in a slot-scanned digital mammography system. The detector is a hybrid device that consists of a CCD operating in time-delay integration mode that is bonded to a 150-μm-thick CdZnTe photoconductor array. The CCD was designed with a detector element pitch of 50 μm. Two devices were evaluated with differing crystalline quality. Incomplete charge collection was a source of reduction in DQE. This occurs in both devices due to characteristically low mobility-lifetime products for CdZnTe, with the greatest losses demonstrated by the multicrystalline sample. The mobility-lifetime products for the multicrystalline device were found to be 2.4x10 -4 and 4.0x10 -7 cm 2 /V for electrons and holes, respectively. The device constructed with higher quality single crystal CdZnTe demonstrated mobility-lifetime products of 1.0x10 -4 and 4.4x10 -6 cm 2 /V for electrons and holes. The MTF and DQE for the device were measured at several exposures and results were compared to predictions from a linear systems model of signal and noise propagation. The MTF at a spatial frequency of 10 mm -1 exceeded 0.18 and 0.56 along the scan and slot directions, respectively. Scanning motion and CCD design limited the resolution along the scan direction. For an x-ray beam from a tungsten target tube with 40 μm molybdenum filtration operated at 26 kV, the single crystal device demonstrated a DQE(0) of 0.70±0.02 at 7.1x10 -6 C/kg (27 mR) exposure to the detector, despite its relatively poor charge collection efficiency

  9. Luminescence of polyethylene glycol coated CdSeTe/ZnS and InP/ZnS nanoparticles in the presence of copper cations.

    Science.gov (United States)

    Beaune, Grégory; Tamang, Sudarsan; Bernardin, Aude; Bayle-Guillemaud, Pascale; Fenel, Daphna; Schoehn, Guy; Vinet, Françoise; Reiss, Peter; Texier, Isabelle

    2011-08-22

    The use of click chemistry for quantum dot (QD) functionalization could be very promising for the development of bioconjugates dedicated to in vivo applications. Alkyne-azide ligation usually requires copper(I) catalysis. The luminescence response of CdSeTe/ZnS nanoparticles coated with polyethylene glycol (PEG) is studied in the presence of copper cations, and compared to that of InP/ZnS QDs coated with mercaptoundecanoic acid (MUA). The quenching mechanisms appear different. Luminescence quenching occurs without any wavelength shift in the absorption and emission spectra for the CdSeTe/ZnS/PEG nanocrystals. In this case, the presence of copper in the ZnS shell is evidenced by energy-filtered transmission electron microscopy (EF-TEM). By contrast, in the case of InP/ZnS/MUA nanocrystals, a redshift of the excitation and emission spectra, accompanied by an increase in absorbance and a decrease in photoluminescence, is observed. For CdSeTe/ZnS/PEG nanocrystals, PL quenching is enhanced for QDs with 1) smaller inorganic-core diameter, 2) thinner PEG shell, and 3) hydroxyl terminal groups. Whereas copper-induced PL quenching can be interesting for the design of sensitive cation sensors, copper-free click reactions should be used for the efficient functionalization of nanocrystals dedicated to bioapplications, in order to achieve highly luminescent QD bioconjugates. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  10. Multielement CdZnTe detectors for high-efficiency, ambient-temperature gamma-ray spectroscopy

    International Nuclear Information System (INIS)

    Prettyman, T.H.; Moss, C.E.; Sweet, M.R.; Ianakiev, K.; Reedy, R.C.; Li, J.; Valentine, J.D.

    1998-01-01

    CdZnTe is an attractive alternative to scintillator-based technology for ambient-temperature, gamma-ray spectroscopy. Large, single-element devices up to 3500 mm 3 have been developed for gamma-ray spectroscopy and are now available commercially. Because CdZnTe is a wide band-gap semiconductor, it can operate over a wide range of ambient temperatures with minimal power consumption. Over this range, CdZnTe detectors routinely yield better overall performance for gamma-ray spectroscopy than scintillator detectors. Manufacturing issues and material electronic properties limit the maximum size of single-element CdZnTe detectors. The authors are investigating methods to combine CdZnTe detectors together to improve detection efficiency and overall performance of gamma-ray spectroscopy. The applications include the assay and identification of radioisotopes for nuclear material safeguards and nonproliferation (over the energy range 50 keV to 1 MeV), and the analysis of elemental composition for planetary science (over the energy range 1 MeV to 10 MeV). Design issues for the two energy ranges are summarized

  11. Study on the mechanism of using IR illumination to improve the carrier transport performance of CdZnTe detector

    Science.gov (United States)

    Mao, Yifei; Zhang, Jijun; Lin, Liwen; Lai, Jianming; Min, Jiahua; Liang, Xiaoyan; Huang, Jian; Tang, Ke; Wang, Linjun

    2018-04-01

    Different wavelength IR light (770-1150 nm) was used to evaluate the effect of IR light on the carrier transport performance of CdZnTe detector. The effective mobility-lifetime product (μτ*) of CdZnTe achieved 10-2 cm2 V-1 when the IR wavelength was in the range of 820-920 nm, but decreased to 1 × 10-4 cm2 V-1 when the wavelength was longer than 920 nm. The mechanism about how IR light affecting the carrier transport property of CdZnTe detector was analyzed with Shockley-Read-Hall model. The defect of doubly ionized Cd vacancy ([VCd]2-) was found to be the main factor that assist IR light affecting the μτ of CdZnTe detector. The photoconductive experiment under 770-1150 nm IR illumination was carried out, and three kinds of photocurrent curve were detected and analyzed by solving the Hecht equation. The experiments demonstrated the effect of [VCd]2- defect on the carrier transport property of CdZnTe detector under IR illumination.

  12. Quantum efficiency of Yb{sup 3+}–ZnTe co-doped phosphate glass system

    Energy Technology Data Exchange (ETDEWEB)

    Falci, R.F.; Freitas, A.M.; Silva, G.H. [Laboratório de Espectroscopia de Materiais, Departamento de Física, ICE, Universidade Federal de Juiz de Fora, 36036-330, Juiz de Fora, MG (Brazil); Pinheiro, A.S. [Centro Federal de EducaçãoTecnológica Celso Suckow da Fonseca (CEFET/RJ) - Campus Petrópolis, CEP 25620-003, Petrópolis - RJ (Brazil); Dantas, N.O. [Laboratório de Novos Materiais Isolantes e Semicondutores (LNMIS), Instituto de Física da Universidade Federal de Uberlândia, CP 593, CEP 38400-902, Uberlândia, MG (Brazil); Anjos, V., E-mail: virgilio@fisica.ufjf.br [Laboratório de Espectroscopia de Materiais, Departamento de Física, ICE, Universidade Federal de Juiz de Fora, 36036-330, Juiz de Fora, MG (Brazil); Bell, M.J.V. [Laboratório de Espectroscopia de Materiais, Departamento de Física, ICE, Universidade Federal de Juiz de Fora, 36036-330, Juiz de Fora, MG (Brazil)

    2016-08-15

    The present paper deals with optical properties of a highly transparent phosphate glass co-doped with Yb{sup 3+} and ZnTe nanocrystals. The presence of ZnTe nanocrystals is due to a sequential melting–nucleation procedure evidenced by optical absorption and Atomic Force Microscopy. From the perspective of compositional variation of the dopants, photoluminescence and lifetime measurements were performed. As a result, it was demonstrated that the ZnTe nanocrystals increase the Yb{sup 3+} emission by a factor up to five, when the pumping wavelength is resonant with the ZnTe absorption. It was also verified that the ZnTe nanocrystals inhibit the self-trapping of the rare earth luminescence. As a consequence, the quantum efficiency of the {sup 5}F{sub 7/2}→{sup 5}F{sub 5/2} transitions of the Yb{sup 3+} is considerably increased. Finally, we have found that the glass thermal diffusivity is not sensitive to temperature variations comprising the interval from room temperature to cryogenic temperatures. This can be an important property when considering this material to future applications in high-power photonic devices.

  13. Effect of Aluminum on Characterization of ZnTe/n-Si Heterojunction Photo detector

    Science.gov (United States)

    Maki, Samir A.; Hassun, Hanan K.

    2018-05-01

    Aluminum doped zinc telluride ZnTenSi thin films of (400nm) thickness with (005 01 015 and 02) wt % were deposited on the glass substrate and nSi wafer to fabricate ZnTenSi heterojunction Photodetector by using thermal vacuum evaporation technique Structural optical electrical and photovoltaic properties are investigated for the samples XRD analysis shows that all the deposited ZnTenSi films show polycrystalline structure with cubic phases and highest sharp peak corresponding to (111) planes and from AFM images shows the surface roughness increase with increase Al percentage ratio The optical absorption measurement of the films was find from transmittance ranges in the variety of wavelength (400 1000) nm and the optical energy band gap decrease from 224 eV to 186 eV dependent upon the Aluminum ratio in the films moreover our studies contain the calculation of the electrical properties of hetero junction were obtained via IV (dark and light condition) and C V measurement The photoelectric properties indicated rise illumination current of heterojunctions through increasing both of incident lighting intensity and Aluminum dopant The values of specific detectivity and quantum efficiency are calculated for all samples also the best spectral response occurs when Al doping ratio 02% The high photo sensitivity and comparatively fast response haste are attributable to in height crystal quality of the [ZnTe ] thin films.

  14. Investigation of the limitations of the highly pixilated CdZnTe detector for PET applications.

    Science.gov (United States)

    Komarov, Sergey; Yin, Yongzhi; Wu, Heyu; Wen, Jie; Krawczynski, Henric; Meng, Ling-Jian; Tai, Yuan-Chuan

    2012-11-21

    We are investigating the feasibility of a high resolution positron emission tomography (PET) insert device based on the CdZnTe detector with 350 µm anode pixel pitch to be integrated into a conventional animal PET scanner to improve its image resolution. In this paper, we have used a simplified version of the multi pixel CdZnTe planar detector, 5 mm thick with 9 anode pixels only. This simplified 9 anode pixel structure makes it possible to carry out experiments without a complete application-specific integrated circuits readout system that is still under development. Special attention was paid to the double pixel (or charge sharing) detections. The following characteristics were obtained in experiment: energy resolution full-width-at-half-maximum (FWHM) is 7% for single pixel and 9% for double pixel photoelectric detections of 511 keV gammas; timing resolution (FWHM) from the anode signals is 30 ns for single pixel and 35 ns for double pixel detections (for photoelectric interactions only the corresponding values are 20 and 25 ns); position resolution is 350 µm in x,y-plane and ∼0.4 mm in depth-of-interaction. The experimental measurements were accompanied by Monte Carlo (MC) simulations to find a limitation imposed by spatial charge distribution. Results from MC simulations suggest the limitation of the intrinsic spatial resolution of the CdZnTe detector for 511 keV photoelectric interactions is 170 µm. The interpixel interpolation cannot recover the resolution beyond the limit mentioned above for photoelectric interactions. However, it is possible to achieve higher spatial resolution using interpolation for Compton scattered events. Energy and timing resolution of the proposed 350 µm anode pixel pitch detector is no better than 0.6% FWHM at 511 keV, and 2 ns FWHM, respectively. These MC results should be used as a guide to understand the performance limits of the pixelated CdZnTe detector due to the underlying detection processes, with the understanding of

  15. Synthesis and properties of ZnTe and Eu3+ ion co-doped glass nanocomposites

    International Nuclear Information System (INIS)

    Rahaman Molla, Atiar; Tarafder, Anal; Dey, Chirantan; Karmakar, Basudeb

    2014-01-01

    In this study, ZnTe (II-VI) semiconductor and Eu +3 -ion co-doped borosilicate glass has been prepared in the SiO 2 -K 2 O-CaO-BaO-B 2 O 3 glass system followed by controlled heat-treatment to produce glass nanocomposites. Glass transition temperature and crystallization peak temperature have been evaluated using DSC analysis. Dilatometric studies were carried out to evaluate thermal expansion co-efficient, glass transition temperature, and dilatometric softening temperature and found to be 10.7 × 10 −6 /K, 580° C and 628° C, respectively. TEM micrographs demonstrate formation of nano sized crystallites of less than 50 nm. The ZnTe crystal formation also established through selected area electron diffraction (SAED) analysis and high resolution images obtained through TEM studies. With increasing heat treatment time, optical transmission cut-off wavelength (λ cut-off ) shifted towards higher wavelength. Excitation spectra were recorded by monitoring emission at 613 nm corresponding to the 5 D 0 → 7 F 2 transition. An intense 394 nm excitation band corresponding to the 7 F 0 → 5 L 6 transition was observed. Emission spectra were then recorded by exciting the glass samples at 394 nm. When the glass is heat-treated for 30 min at 610° C, a 6-fold increase in the intensity of the red emission at 612 nm has been observed, which is attributed to the segregation of Eu 3+ ions into the low phonon energy ZnTe crystallites and as the size of the nanocrystals is smaller than the size of the exciton, quantum confinement effect is visible. Further increase in heat-treatment duration led to decrease in luminescence intensity due to the growth of larger size crystals. 5 D 1 → 7 F 0 transition is visible only in the samples heat-treated for 30 min and 1 h, which is a characteristic of presence of Eu 3+ ions in the low phonon energy ZnTe crystal sites. The micro hardness of the precursor glass and glass nanocomposites was evaluated; base glass shows

  16. Coplanar-grid CdZnTe detector with three-dimensional position sensitivity

    International Nuclear Information System (INIS)

    Luke, P.N.; Amman, M.; Lee, J.S.; Yaver, H.

    1998-06-01

    A 3-dimensional position-sensitive coplanar-grid detector design for use with compound semiconductors is described. This detector design maintains the advantage of a coplanar-grid detector in which good energy resolution can be obtained from materials with poor charge transport. Position readout in two dimensions is accomplished using proximity-sensing electrodes adjacent to the electron-collecting grid electrode of the detector. Additionally, depth information is obtained by taking the ratio of the amplitudes of the collecting grid signal and the cathode signal. Experimental results from a prototype CdZnTe detector are presented

  17. Development of CdZnTe X-ray detectors at DSRI

    DEFF Research Database (Denmark)

    van Pamelen, M.A.J.; Budtz-Jørgensen, Carl; Kuvvetli, Irfan

    2000-01-01

    An overview of the development of CdZnTe X-ray detectors at the Danish Space Research Institute is presented. Initiated in the beginning of 1996, the main motivation at that time was to develop focal plane detectors for the novel type of hard X-ray telescopes, which are currently under study...... developed a technique, which, with the use of microstrip electrodes, is able to compensate for the signal loss caused by trapping of positive charge carriers. This technique leads to a dramatic improvement of the achievable energy resolution, even for crystals of poor quality. With the technique, hole...

  18. Charge loss between contacts of CdZnTe pixel detectors

    CERN Document Server

    Bolotnikov, A E; Harrison, F A; Wong, A S; Schindler, S M; Eichelberger, A C

    1999-01-01

    The surface of Cd sub 1 sub - sub x Zn sub x Te (CZT) material has high resistivity but is not a perfect dielectric. Even a small surface conductivity can affect the electric field distribution, and therefore, the charge collection efficiency of a CZT pixel detector. The paper describes studies of this phenomenon for several contact configurations made on a single CZT detector. We have determined the maximum inter-contact separation at which the surface inter-pixel charge loss can be neglected. (author)

  19. Synthesis of ZnTe nanowires onto TiO2 nanotubular arrays by pulse-reverse electrodeposition

    International Nuclear Information System (INIS)

    Gandhi, T.; Raja, K.S.; Misra, M.

    2009-01-01

    Growth of ZnTe nanowires using a pulse-reverse electrodeposition technique from a non-aqueous solution is reported. ZnTe nanowires were grown on to an ordered nanotubular TiO 2 template in a propylene carbonate solution at 130 o C inside a controlled atmosphere glove box. The pulse-reverse electro deposition process consisted of a cathodic pulse at - 0.62 V and an anodic pulse at 0.75 V Vs Zn 2+ /Zn. Stoichiometry growth of crystalline ZnTe nanowires was observed in the as-deposited condition. The anodic pulse cycle of the pulse-reverse electrodeposition process presumably introduced zinc vacancies as deep level acceptors at an energy level of E v + 0.47 eV. The resultant ZnTe nanowires showed p-type semiconductivity with a resistivity of 7.8 x 10 4 Ω cm and a charge carrier density of 1.67 x 10 14 cm -3 . Annihilation of the defects occurred upon thermal annealing that resulted in marginal decrease in the defect density.

  20. Impact of Antibody Bioconjugation on Emission and Energy Band Profile of CdSeTe/ZnS Quantum Dots

    Science.gov (United States)

    Torchynska, T. V.; Gomez, J. A. Jaramillo; Polupan, G.; Macotela, L. G. Vega

    2018-03-01

    The variation of the photoluminescence (PL) and Raman scattering spectra of CdSeTe/ZnS quantum dots (QDs) on conjugation to an antibody has been investigated. Two types of CdSeTe/ZnS QD with different emission wavelength (705 nm and 800 nm) were studied comparatively before and after conjugation to anti-pseudorabies virus antibody (AB). Nonconjugated QDs were characterized by Gaussian-type PL bands. PL shifts to higher energy and asymmetric shape of PL bands was detected in PL spectra of bioconjugated QDs. The surface-enhanced Raman scattering effect was exhibited by the bioconjugated CdSeTe/ZnS QDs, indicating that the excitation light used in the Raman study generated electric dipoles in the AB molecules. The optical bandgap of the CdSeTe core was calculated numerically as a function of its radius based on an effective mass approximation model. The energy band diagrams for non- and bioconjugated CdSeTe/ZnS QDs were obtained, revealing a type II quantum well in the CdSeTe core. The calculations show that AB dipoles, excited in the bioconjugated QDs, stimulate a change in the energy band diagram of the QDs that alters the PL spectrum. These results could be useful for improving the sensitivity of QD biosensors.

  1. Characterization of Electronic Materials HgZnSe and HgZnTe Using Innovative and Conventional Techniques

    Science.gov (United States)

    Tanton, George; Kesmodel, Roy; Burden, Judy; Su, Ching-Hua; Cobb, Sharon D.; Lehoczky, S. L.

    2000-01-01

    HgZnSe and HgZnTe are electronic materials of interest for potential IR detector and focal plane array applications due to their improved strength and compositional stability over HgCdTe, but they are difficult to grow on Earth and to fully characterize. Conventional contact methods of characterization, such as Hall and van der Paw, although adequate for many situations are typically labor intensive and not entirely suitable where only very small samples are available. To adequately characterize and compare properties of electronic materials grown in low earth orbit with those grown on Earth, innovative techniques are needed that complement existing methods. This paper describes the implementation and test results of a unique non-contact method of characterizing uniformity, mobility, and carrier concentration together with results from conventional methods applied to HgZnSe and HgZnTe. The innovative method has advantages over conventional contact methods since it circumvents problems of possible contamination from alloying electrical contacts to a sample and also has the capability to map a sample. Non- destructive mapping, the determination of the carrier concentration and mobility at each place on a sample, provides a means to quantitatively compare, at high spatial resolution, effects of microgravity on electronic properties and uniformity of electronic materials grown in low-Earth orbit with Earth grown materials. The mapping technique described here uses a 1mm diameter polarized beam of radiation to probe the sample. Activation of a magnetic field, in which the sample is placed, causes the plane of polarization of the probe beam to rotate. This Faraday rotation is a function of the free carrier concentration and the band parameters of the material. Maps of carrier concentration, mobility, and transmission generated from measurements of the Faraday rotation angles over the temperature range from 300K to 77K will be presented. New information on band parameters

  2. Effects of SiO2 encapsulation and laser processing on single CdTe/ZnTe quantum dots grown on Si (001) substrates

    International Nuclear Information System (INIS)

    Lee, Hong Seok; Rastelli, Armando; Schmidt, Oliver G.; Kim, Tae Whan; Lee, In Won

    2011-01-01

    Micro-photoluminescence (μ-PL) measurements are carried out to investigate the effects of SiO 2 encapsulation and laser processing of single CdTe/ZnTe quantum dots (QDs) grown on Si (001) substrates by using molecular beam epitaxy and atomic layer epitaxy. After laser processing, the μ-PL peak shift for the 200-nm SiO 2 capped single QD is larger than that of the as-grown sample. The large μ-PL peak shift in the 200-nm SiO 2 capped sample is related to the compressive stress induced by the ZnTe cap layer during laser processing. These results indicate that SiO 2 encapsulation and laser processing represent effective methods for achieving local wavelength tuning in single QDs.

  3. Guided Growth of Horizontal p-Type ZnTe Nanowires

    Science.gov (United States)

    2016-01-01

    A major challenge toward large-scale integration of nanowires is the control over their alignment and position. A possible solution to this challenge is the guided growth process, which enables the synthesis of well-aligned horizontal nanowires that grow according to specific epitaxial or graphoepitaxial relations with the substrate. However, the guided growth of horizontal nanowires was demonstrated for a limited number of materials, most of which exhibit unintentional n-type behavior. Here we demonstrate the vapor–liquid–solid growth of guided horizontal ZnTe nanowires and nanowalls displaying p-type behavior on four different planes of sapphire. The growth directions of the nanowires are determined by epitaxial relations between the nanowires and the substrate or by a graphoepitaxial effect that guides their growth along nanogrooves or nanosteps along the surface. We characterized the crystallographic orientations and elemental composition of the nanowires using transmission electron microscopy and photoluminescence. The optoelectronic and electronic properties of the nanowires were studied by fabricating photodetectors and top-gate thin film transistors. These measurements showed that the guided ZnTe nanowires are p-type semiconductors and are photoconductive in the visible range. The guided growth of horizontal p-type nanowires opens up the possibility of parallel nanowire integration into functional systems with a variety of potential applications not available by other means. PMID:27885331

  4. Front-end counting mode electronics for CdZnTe sensor readout

    CERN Document Server

    Moraes, Danielle; Kaplon, Jan

    2004-01-01

    The development of a front-end circuit optimized for CdZnTe detector readout, implemented in 0.25 mu m CMOS technology, is reported. The ASIC comprises 17 channels of a charge sensitive amplifier with an active feedback, followed by a gain-shaper stage and a discriminator with a 5 bit fine-tune DAC. The signal from the discriminator is sensed by a 25 ns mono-stable circuit and an 18-bit static ripple- counter. The channel architecture is optimized for the detector characteristics in order to achieve the best energy resolution at a maximum counting rate of 2 million counts/second. The amplifier shows a linear sensitivity of 24 mV/fC with 50 ns peaking time and an equivalent noise charge of about 650 e/sup -/, for a detector capacitance of 10 pF. When connected to a 3*3*7 mm/sup 3/ CdZnTe detector the amplifier gain is about 8 mV/keV with a noise around 3.6 keV.

  5. Barrier controlled carrier trapping of extended defects in CdZnTe detector

    International Nuclear Information System (INIS)

    Guo, Rongrong; Jie, Wanqi; Xu, Yadong; Yu, Hui; Zha, Gangqiang; Wang, Tao; Ren, Jie

    2015-01-01

    Transient current techniques using alpha particle source were utilized to study the influence of extended defects on the electron drift time and the detector performance of CdZnTe crystals. Different from the case of trapping through isolated point defect, a barrier controlled trapping model was used to explain the mechanism of carrier trapping at the extended defects. The effect of extended defects on the photoconductance was studied by laser beam induced transient current (LBIC) measurement. The results demonstrate that the Schottky-type depletion space charge region is induced at the vicinity of the extended defects, which further distorts the internal electric field distribution and affects the carrier trajectory in CdZnTe crystals. The relationship between the electron drift time and detector performance has been established. - Highlights: • The barrier controlled trapping model was developed around extended defects. • Electron mobility and E-field distribution were distorted by space charge depletion region. • Extended defects act as a recombination-activated region. • The relationships between extended defects and detector performance were established

  6. Optical characterization of bulk Zn1-xBexTe crystals

    International Nuclear Information System (INIS)

    Shih, Y C; Huang, Y S; Firszt, F; Legowski, S; Meczynska, H; Tiong, K K

    2008-01-01

    This paper presents an optical characterization of three bulk sphalerite Zn 1-x Be x Te crystals grown by the modified high pressure Bridgman method. The study was conducted in the near-band-edge interband transition regime using low temperature photoluminescence (PL), temperature-dependent contactless electroreflectance (CER) and/or photoreflectance (PR) in the temperature range of 15-400 K, and surface photovoltage spectroscopy (SPS) at room temperature. PL spectra at low temperatures of the samples investigated consist of an excitonic line, a band due to recombination of free electrons with holes located at shallow acceptors and a broad band related to recombination through deeper level defects. The band-edge excitonic transitions have been observed in the CER/PR spectra. The fundamental transition energies E 0 are determined via lineshape fits to the CER/PR spectra. The values of E 0 at room temperature obtained from CER/PR spectra correspond well to that determined from SPS measurements, and the Be contents x of the samples are determined using a linear equation which describes the room temperature band gap dependence on composition for the Zn 1-x Be x Te alloy system. The parameters describing the temperature dependence of the band-edge excitonic transition energies are evaluated and discussed

  7. Structural, electronic, linear, and nonlinear optical properties of ZnCdTe{sub 2} chalcopyrite

    Energy Technology Data Exchange (ETDEWEB)

    Ouahrani, Tarik [Laboratoire de Physique Theorique, Universite de Tlemcen, B.P. 230, Tlemcen 13000 (Algeria); Reshak, Ali H. [Institute of Physical Biology, South Bohemia University, Nove Hrady 37333 (Czech Republic); School of Microelectronic Engineering, University of Malaysia Perlis (UniMAP), Block A, Kompleks Pusat Pengajian, 02600 Arau Jejawi, Perlis (Malaysia); Khenata, R. [Laboratoire de Physique Quantique et de Modelisation Mathematique, Universite de Mascara, Mascara 29000 (Algeria); Department of Physics and Astronomy, Faculty of Science, King Saud University, P.O. Box 2455, Riyadh 11451 (Saudi Arabia); Baltache, H.; Amrani, B. [Laboratoire de Physique Quantique et de Modelisation Mathematique, Universite de Mascara, Mascara 29000 (Algeria); Bouhemadou, A. [Department of Physics and Astronomy, Faculty of Science, King Saud University, P.O. Box 2455, Riyadh 11451 (Saudi Arabia); Faculty of Sciences, Department of Physics, University of Setif, Setif 19000 (Algeria)

    2011-03-15

    We report results of first-principles density functional calculations using the full-potential linearized augmented plane wave method. The generalized gradient approximation (GGA) and the Engel-Vosko-GGA (EV-GGA) formalism were used for the exchange-correlation energy to calculate the structural, electronic, linear, and nonlinear optical properties of the chalcopyrite ZnCdTe{sub 2} compound. The valence band maximum and the conduction band minimum are located at the {gamma}-point, resulting in a direct band gap of about 0.71 eV for GGA and 1.29 eV for EV-GGA. The results of bulk properties, such as lattice parameters (a, c, and u), bulk modulus B, and its pressure derivative B' are evaluated. The optical properties of this compound, namely the real and the imaginary parts of the dielectric function, reflectivity, and refractive index, show a considerable anisotropy as a consequence ZnCdTe{sub 2} posseses a strong birefringence. In addition, the extinction coefficient, the electron energy loss function, and the nonlinear susceptibility are calculated and their spectra are analyzed. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  8. Molecular beam epitaxy of CdSe epilayers and quantum wells on ZnTe substrate

    International Nuclear Information System (INIS)

    Park, Y.M.; Andre, R.; Kasprzak, J.; Dang, Le Si; Bellet-Amalric, E.

    2007-01-01

    We have grown zinc-blende cadmium selenide (CdSe) epilayers on ZnTe-(0 0 1) substrate by molecular beam epitaxy (MBE). By controlling the substrate temperature and beam-equivalent pressure (BEP) ratio, of Se to Cd, we determined the most suitable growth condition based on reflection high-energy electron diffraction (RHEED) pattern. At a substrate temperature of 280 deg. C and a BEP ratio of 3.6, the RHEED pattern showed a V-like feature, indicating a rough surface with facets. As the substrate temperature was increased to 360 deg. C at the same BEP ratio, a V-like RHEED pattern moved to a clear streaky pattern. Moreover when the BEP ratio was increased to 4.8 at 360 deg. C of substrate temperature, a clear (2 x 1) reconstruction of the CdSe layer was observed. A CdSe/CdMgSe single quantum well structure was also grown on ZnTe-(0 0 1) substrate by MBE. The RHEED pattern showed a clear (2 x 1) surface reconstruction during the growth. By photoluminescence measurement, a good optical property of the structure was obtained

  9. Structural and optical properties of alloyed quaternary CdSeTeS core and CdSeTeS/ZnS core–shell quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Adegoke, Oluwasesan, E-mail: adegoke.sesan@mailbox.co.za [Department of Chemistry, Faculty of Natural and Agricultural Sciences, University of Pretoria, Lynnwood Road, Pretoria 0002 (South Africa); Nyokong, Tebello, E-mail: t.nyokong@ru.ac.za [Department of Chemistry, Rhodes University, Grahamstown 6140 (South Africa); Forbes, Patricia B.C., E-mail: patricia.forbes@up.ac.za [Department of Chemistry, Faculty of Natural and Agricultural Sciences, University of Pretoria, Lynnwood Road, Pretoria 0002 (South Africa)

    2015-10-05

    Highlights: • Alloyed quaternary CdSeTeS core quantum dots (QDs) were synthesized. • Passivation was carried out using a ZnS shell. • Quaternary CdSeTeS core exhibited unique optical properties over CdSeTe/ZnS. • CdSeTeS can be employed as a useful alternative to core/shell QDs. - Abstract: Synthesis of fluorescent alloyed quantum dots (QDs) with unique optical properties suitable for a wide array of chemical, physical and biological applications is of research interest. In this work, highly luminescent and photostable alloyed quaternary CdSeTeS core QDs of two different sizes were fabricated via the organometallic hot-injection synthetic route. Characterization of the nanocrystals were performed using TEM, XRD, UV/vis and fluorescence spectrophotometric techniques. We have demonstrated in this work that the well fabricated alloyed quaternary CdSeTeS core QDs possess unique optical properties that are advantageous over conventional core/shell systems. Formation of the CdSeTeS/ZnS core/shell with the desired optical properties comes with a number of challenges, hence the advantages of the quaternary alloyed core over the core/shell QDs are (i) avoidance of the challenging process of determining the proper shell thickness which can provide the desired optical properties in the core/shell system and (ii) avoidance of the lattice-induced mismatch between the core and the shell material which can either lead to incomplete exciton confinement or dislocation at the core/shell interface.

  10. Dielectric properties of the ternary TeO2/Nb2O5/ZnO glasses

    International Nuclear Information System (INIS)

    Ahmad, Mohamad M.; Yousef, El Sayed; Moustafa, El Sayed

    2006-01-01

    Glasses of the system TeO 2 /Nb 2 O 5 /ZnO containing different concentration of ZnO (ranging from 5 to 20 mol%) were prepared. The dielectric properties over wide ranges of frequencies and temperatures were investigated as a function of ZnO content by impedance spectroscopy measurements. The impedance spectra of the present glasses were modeled by appropriate equivalent circuit. The dielectric constant has a value of 66 for the 85TeO 2 /10Nb 2 O 5 /5ZnO glass, which is three times larger than that of pure TeO 2 glass and other binary, e.g. TeO 2 /ZnCl 2 , tellurite glassy systems. The results have been analyzed in light of varying NbO 6 octahedra and NbO 4 tetrahedra of niobium oxide as zinc oxide varies from 5 to 20 mol%. The relaxation properties of the investigated glasses are presented in the electric modulus formalism, where the relaxation time and the respective activation energy are determined

  11. Studies on the transfer of Cs, Sr, Co, Mn and Zn from soil to plants and from medium to mushrooms by using radiotracer

    International Nuclear Information System (INIS)

    Ban-nai, Tadaaki; Muramatsu, Yasuyuki; Yoshida, Satoshi; Yanagisawa, Kei

    1996-01-01

    Radiotracer experiments were carried out to study radionuclide uptake by plants and mushrooms. Transfer factors of radionuclides from soil to leaf vegetables (cabbage, Chinese cabbage, komatsuna, spinach and lettuce) have been determined by radiotracers. The transfer factors of radioactive Cs, Sr, Mn, Co and Zn for edible parts of vegetables were 0.11, 0.24, 0.61, 0.05 and 0.52, respectively. The transfer factors of Mn, Co and Zn for spinach were higher than those for the other vegetables. The transfer factors of Cs for different organs of the leaf vegetables were rather homogeneous. The transfer factors of Sr and Mn were higher for older (outer) leaves than younger (inner) ones. In contrast to Sr and Mn, transfer factors of Zn for younger leaves were higher than those for older ones. In order to study radionuclide uptake by mushrooms, cultivation experiments in flasks were carried out using radiotracers, 137 Cs, 85 Sr, 60 Co, 54 Mn and 65 Zn. Four mushroom species Hebeloma vinosophyllum, Flammulina velutipes, Agrocybe cylindracea and Coprinus phlyctidosporus were used. In addition, Medicago sativa was also tested. Mushrooms tended to accumulate Cs, although there was a large difference between mushroom species. The concentration ratio had the highest value of 21 for Cs in vinosophyllum. The value was much higher than that in the plant sample. The present findings agreed with our previous observations in which Hebeloma species collected in forests contained large amount of 137 Cs. The effects of stable elements in the medium on the accumulations were investigated. The concentration ratios of Cs, Sr and Co were not influenced highly by coexisting stable elements in the medium. However, the ratio of Mn decreased as the amount of coexisting stable elements in the medium was increased. (J.P.N.)

  12. In-Ga-Zn-oxide thin-film transistors with Sb2TeOx gate insulators fabricated by reactive sputtering using a metallic Sb2Te target

    International Nuclear Information System (INIS)

    Cheong, Woo-Seok

    2011-01-01

    Using reactive sputtering, we made transparent amorphous Sb 2 TeO x thin films from a metallic Sb 2 Te target in an oxidizing atmosphere. In-Ga-Zn-oxide thin-film transistors (IGZO TFTs) with Sb 2 TeO x gate insulators deposited at room temperature showed a large hysteresis with a counter clockwise direction, which was caused by mobile charges in the gate insulators. The problems of the mobile charges was solved by using Sb 2 TeO x films formed at 250 .deg. C. After the IGZO TFT had been annealed at 200 .deg. C for 1 hour in an O 2 ambient, the mobility of the IGZO TFT was 22.41 cm 2 /Vs, and the drain current on-off ratio was ∼10 8 .

  13. Comparison of the surfaces and interfaces formed for sputter and electroless deposited gold contacts on CdZnTe

    Science.gov (United States)

    Bell, Steven J.; Baker, Mark A.; Duarte, Diana D.; Schneider, Andreas; Seller, Paul; Sellin, Paul J.; Veale, Matthew C.; Wilson, Matthew D.

    2018-01-01

    Cadmium zinc telluride (CdZnTe) is a leading sensor material for spectroscopic X/γ-ray imaging in the fields of homeland security, medical imaging, industrial analysis and astrophysics. The metal-semiconductor interface formed during contact deposition is of fundamental importance to the spectroscopic performance of the detector and is primarily determined by the deposition method. A multi-technique analysis of the metal-semiconductor interface formed by sputter and electroless deposition of gold onto (111) aligned CdZnTe is presented. Focused ion beam (FIB) cross section imaging, X-ray photoelectron spectroscopy (XPS) depth profiling and current-voltage (IV) analysis have been applied to determine the structural, chemical and electronic properties of the gold contacts. In a novel approach, principal component analysis has been employed on the XPS depth profiles to extract detailed chemical state information from different depths within the profile. It was found that electroless deposition forms a complicated, graded interface comprised of tellurium oxide, gold/gold telluride particulates, and cadmium chloride. This compared with a sharp transition from surface gold to bulk CdZnTe observed for the interface formed by sputter deposition. The electronic (IV) response for the detector with electroless deposited contacts was symmetric, but was asymmetric for the detector with sputtered gold contacts. This is due to the electroless deposition degrading the difference between the Cd- and Te-faces of the CdZnTe (111) crystal, whilst these differences are maintained for the sputter deposited gold contacts. This work represents an important step in the optimisation of the metal-semiconductor interface which currently is a limiting factor in the development of high resolution CdZnTe detectors.

  14. CdSe/ZnSe quantum dot structures grown by molecular beam epitaxy with a CdTe submonolayer stressor

    International Nuclear Information System (INIS)

    Sedova, I. V.; Lyublinskaya, O. G.; Sorokin, S. V.; Sitnikova, A. A.; Toropov, A. A.; Donatini, F.; Dang, Si Le; Ivanov, S. V.

    2007-01-01

    A procedure for formation of CdSe quantum dots (QDs) in a ZnSe matrix is suggested. The procedure is based on the introduction of a CdTe submonolayer stressor deposited on the matrix surface just before deposition of the material of the QDs. (For CdTe/ZnSe structure, the relative lattice mismatch is Δa/a ∼ 14%.) The stressor forms small strained islands at the ZnSe surface, thus producing local fields of high elastic stresses controlling the process of the self-assembling of the QDs. According to the data of transmission electron microscopy, this procedure allows a considerable increase in the surface density of QDs, with a certain decrease in their lateral dimensions (down to 4.5 ± 1.5 nm). In the photoluminescence spectra, a noticeable (∼150 meV) shift of the peak to longer wavelengths from the position of the reference CdSe/ZnSe QD structure is observed. The shift is due to some transformation of the morphology of the QDs and an increase in the Cd content in the QDs. Comprehensive studies of the nanostructures by recording and analyzing the excitation spectra of photoluminescence, the time-resolved photoluminescence spectra, and the cathodoluminescence spectra show that the emission spectra involve two types of optical transitions, namely, the type-I transitions in the CdSeTe/ZnSe QDs and the type-II transitions caused mainly by the low cadmium content (Zn,Cd)(Se,Te)/ZnSe layer formed between the QDs

  15. Post-growth annealing of Bridgman-grown CdZnTe and CdMnTe crystals for room-temperature nuclear radiation detectors

    International Nuclear Information System (INIS)

    Egarievwe, Stephen U.; Yang, Ge; Egarievwe, Alexander A.; Okwechime, Ifechukwude O.; Gray, Justin; Hales, Zaveon M.; Hossain, Anwar; Camarda, Giuseppe S.; Bolotnikov, Aleksey E.; James, Ralph B.

    2015-01-01

    Bridgman-grown cadmium zinc telluride (CdZnTe or CZT) and cadmium manganese telluride (CdMnTe or CMT) crystals often have Te inclusions that limit their performances as X-ray- and gamma-ray-detectors. We present here the results of post-growth thermal annealing aimed at reducing and eliminating Te inclusions in them. In a 2D analysis, we observed that the sizes of the Te inclusions declined to 92% during a 60-h annealing of CZT at 510 °C under Cd vapor. Further, tellurium inclusions were eliminated completely in CMT samples annealed at 570 °C in Cd vapor for 26 h, whilst their electrical resistivity fell by an order of 10 2 . During the temperature-gradient annealing of CMT at 730 °C and an 18 °C/cm temperature gradient for 18 h in a vacuum of 10 −5 mbar, we observed the diffusion of Te from the sample, so causing a reduction in size of the Te inclusions. For CZT samples annealed at 700 °C in a 10 °C/cm temperature gradient, we observed the migration of Te inclusions from a low-temperature region to a high one at 0.022 μm/s. During the temperature-gradient annealing of CZT in a vacuum of 10 −5 mbar at 570 °C and 30 °C/cm for 18 h, some Te inclusions moved toward the high-temperature side of the wafer, while other inclusions of the same size, i.e., 10 µm in diameter, remained in the same position. These results show that the migration, diffusion, and reaction of Te with Cd in the matrix of CZT- and CMT-wafers are complex phenomena that depend on the conditions in local regions, such as composition and structure, as well as on the annealing conditions

  16. Characterization of electroless Au, Pt and Pd contacts on CdTe and ZnTe by RBS and SIMS techniques

    Energy Technology Data Exchange (ETDEWEB)

    Roumie, M. E-mail: mroumie@cnrs.edu.lb; Hageali, M.; Zahraman, K.; Nsouli, B.; Younes, G

    2004-06-01

    Rutherford backscattering spectrometry (RBS) was applied to characterize Au, Pt and Pd contacts on II-VI semiconductor materials, CdTe and ZnTe, used as nuclear detectors. Electroless thin film depositions were prepared by changing the concentration of the reaction solution. Contrary to the deposition reaction time, it was observed that the amount of solution dilution degree had a considerable effect on increasing the thickness of the metal layer. Furthermore, PICTS electrical measurements confirmed the depth profile analysis performed by RBS and SIMS.

  17. Single-color, in situ photolithography marking of individual CdTe/ZnTe quantum dots containing a single Mn{sup 2+} ion

    Energy Technology Data Exchange (ETDEWEB)

    Sawicki, K.; Malinowski, F. K.; Gałkowski, K.; Jakubczyk, T.; Kossacki, P.; Pacuski, W.; Suffczyński, J., E-mail: Jan.Suffczynski@fuw.edu.pl [Institute of Experimental Physics, Faculty of Physics, University of Warsaw, Pasteura 5 St., PL-02-093 Warsaw (Poland)

    2015-01-05

    A simple, single-color method for permanent marking of the position of individual self-assembled semiconductor Quantum Dots (QDs) at cryogenic temperatures is reported. The method combines in situ photolithography with standard micro-photoluminescence spectroscopy. Its utility is proven by a systematic magnetooptical study of a single CdTe/ZnTe QD containing a Mn{sup 2+} ion, where a magnetic field of up to 10 T in two orthogonal, Faraday and Voigt, configurations is applied to the same QD. The presented approach can be applied to a wide range of solid state nanoemitters.

  18. 3-D Spatial Resolution of 350 μm Pitch Pixelated CdZnTe Detectors for Imaging Applications.

    Science.gov (United States)

    Yin, Yongzhi; Chen, Ximeng; Wu, Heyu; Komarov, Sergey; Garson, Alfred; Li, Qiang; Guo, Qingzhen; Krawczynski, Henric; Meng, Ling-Jian; Tai, Yuan-Chuan

    2013-02-01

    We are currently investigating the feasibility of using highly pixelated Cadmium Zinc Telluride (CdZnTe) detectors for sub-500 μ m resolution PET imaging applications. A 20 mm × 20 mm × 5 mm CdZnTe substrate was fabricated with 350 μ m pitch pixels (250 μ m anode pixels with 100 μ m gap) and coplanar cathode. Charge sharing among the pixels of a 350 μ m pitch detector was studied using collimated 122 keV and 511 keV gamma ray sources. For a 350 μ m pitch CdZnTe detector, scatter plots of the charge signal of two neighboring pixels clearly show more charge sharing when the collimated beam hits the gap between adjacent pixels. Using collimated Co-57 and Ge-68 sources, we measured the count profiles and estimated the intrinsic spatial resolution of 350 μ m pitch detector biased at -1000 V. Depth of interaction was analyzed based on two methods, i.e., cathode/anode ratio and electron drift time, in both 122 keV and 511 keV measurements. For single-pixel photopeak events, a linear correlation between cathode/anode ratio and electron drift time was shown, which would be useful for estimating the DOI information and preserving image resolution in CdZnTe PET imaging applications.

  19. Conduction and reversible memory phenomena in Au-nanoparticles-incorporated TeO{sub 2}–ZnO films

    Energy Technology Data Exchange (ETDEWEB)

    Bontempo, L., E-mail: bontempo@usp.br [Laboratório de Sistemas Integráveis, Escola Politécnica da Universidade de São Paulo, Av. Prof. Luciano Gualberto, 158, Travessa 3, 05508-900 São Paulo, SP (Brazil); Laboratório de Materiais Fotônicos e Optoeletrônicos, Faculdade de Tecnologia de São Paulo, Praça Cel. Fernando Prestes, 30, 01124-060 São Paulo, SP (Brazil); Santos Filho, S.G. dos, E-mail: sgsantos@usp.br [Laboratório de Sistemas Integráveis, Escola Politécnica da Universidade de São Paulo, Av. Prof. Luciano Gualberto, 158, Travessa 3, 05508-900 São Paulo, SP (Brazil); Kassab, L.R.P., E-mail: kassablm@osite.com.br [Laboratório de Materiais Fotônicos e Optoeletrônicos, Faculdade de Tecnologia de São Paulo, Praça Cel. Fernando Prestes, 30, 01124-060 São Paulo, SP (Brazil)

    2016-07-29

    A reversible memory behavior in TeO{sub 2}–ZnO thin films containing Au nanoparticles prepared using the sputtering technique has been observed. The current–voltage characteristics of the films, having Al and Si as electrodes, showed a switching behavior starting from an initial state of low conductivity to a high conductivity one. As a result, an abrupt increase of current (10{sup −7} to 10{sup −3} A) was observed for 6.5 V (100 nm thickness). Au nanoparticles provide a larger electron storage capability, and do not favor the transport through the insulator; they present a higher trapped charge concentration, which reduces the leakage current to lower levels. The influence of the Au nanoparticle diameter and volumetric concentration to reach the abrupt current transition and the value of the transition voltage was studied. These parameters were found to play an important role on reversible memory phenomena as they determine the facility/difficulty to fill and saturate the traps (Au nanoparticles) with electrons. - Highlights: • TeO{sub 2}–ZnO thin films with Au nanoparticles grown by magnetron co-sputtering for memory devices • Nucleation of gold nanoparticles by annealing process • Electrical properties of TeO{sub 2}–ZnO thin films with and without gold nanoparticles • Reversible memory phenomenum in Au-nanoparticles-incorporated TeO{sub 2}–ZnO thin films.

  20. A first-principles study of II-VI (II = Zn; VI = O{,} S{,} Se{,} Te) semiconductor nanostructures

    NARCIS (Netherlands)

    Azpiroz, Jon M.; Infante, Ivan; Lopez, Xabier; Ugalde, Jesus M.; De Angelis, Filippo

    2012-01-01

    We present a systematic investigation of the structural{,} electronic and optical properties of wurtzite-like ZnX (X = O{,} S{,} Se{,} Te) nanostructures at the DFT/TDDFT level of theory. To provide a direct comparison with the experiment{,} realistic 1.0-1.5 nm quantum dots have been built up from

  1. Infrared LED Enhanced Spectroscopic CdZnTe Detector Working under High Fluxes of X-rays

    Directory of Open Access Journals (Sweden)

    Jakub Pekárek

    2016-09-01

    Full Text Available This paper describes an application of infrared light-induced de-polarization applied on a polarized CdZnTe detector working under high radiation fluxes. We newly demonstrate the influence of a high flux of X-rays and simultaneous 1200-nm LED illumination on the spectroscopic properties of a CdZnTe detector. CdZnTe detectors operating under high radiation fluxes usually suffer from the polarization effect, which occurs due to a screening of the internal electric field by a positive space charge caused by photogenerated holes trapped at a deep level. Polarization results in the degradation of detector charge collection efficiency. We studied the spectroscopic behavior of CdZnTe under various X-ray fluxes ranging between 5 × 10 5 and 8 × 10 6 photons per mm 2 per second. It was observed that polarization occurs at an X-ray flux higher than 3 × 10 6 mm − 2 ·s − 1 . Using simultaneous illumination of the detector by a de-polarizing LED at 1200 nm, it was possible to recover X-ray spectra originally deformed by the polarization effect.

  2. Study of CdTe:Cl and CdZnTe detectors for medical multi-slices X-ray Computed Tomography; Etude de detecteurs en CdTe:Cl et CdZnTe pour la tomographie X medicale multicoupes

    Energy Technology Data Exchange (ETDEWEB)

    Ricq, St

    1999-09-28

    The application of CdTe and CdZnTe detectors to medical X-ray Computed Tomography have been investigated. Different electrodes (Au, Pt, In) have been deposited on CdZnTe HPBM and on CdTe:ClTHM. Their injection properties have been determined with Current-Voltage characteristics. Under X-ray in CT conditions, injection currents measurements reveal trapped carriers space-charges formation. The same way, the comparisons of the responses to X-beam cut-off with various injection possibilities enable to follow the space-charges evolutions and then to determine the predominant traps types. Nevertheless, both hole and electron traps are responsible for the memory effect e.g. the currents levels dependence with irradiation history. This effect is noticed in particular on responses to fast flux variations that simulate scanner's conditions. Trap levels probably corresponding to native defects are responsible for these limitations. In order to make such detectors suitable for X-ray Computed Tomography, significant progresses in CdTe for CdZnTe crystal growth with an important defects densities reduction (factor 10), or possibly counting mode operation, seem necessary. (author)

  3. Study of CdTe:Cl and CdZnTe detectors for medical multi-slices X-ray Computed Tomography; Etude de detecteurs en CdTe:Cl et CdZnTe pour la tomographie X medicale multicoupes

    Energy Technology Data Exchange (ETDEWEB)

    Ricq, St

    1999-09-28

    The application of CdTe and CdZnTe detectors to medical X-ray Computed Tomography have been investigated. Different electrodes (Au, Pt, In) have been deposited on CdZnTe HPBM and on CdTe:ClTHM. Their injection properties have been determined with Current-Voltage characteristics. Under X-ray in CT conditions, injection currents measurements reveal trapped carriers space-charges formation. The same way, the comparisons of the responses to X-beam cut-off with various injection possibilities enable to follow the space-charges evolutions and then to determine the predominant traps types. Nevertheless, both hole and electron traps are responsible for the memory effect e.g. the currents levels dependence with irradiation history. This effect is noticed in particular on responses to fast flux variations that simulate scanner's conditions. Trap levels probably corresponding to native defects are responsible for these limitations. In order to make such detectors suitable for X-ray Computed Tomography, significant progresses in CdTe for CdZnTe crystal growth with an important defects densities reduction (factor 10), or possibly counting mode operation, seem necessary. (author)

  4. First-principles calculations of a half-metallic ferromagnet zinc blende Zn1−xVxTe

    International Nuclear Information System (INIS)

    El Amine Monir, M.; Baltache, H.; Khenata, R.; Murtaza, G.; Azam, Sikander; Bouhemadou, A.; Al-Douri, Y.; Bin Omran, S.; Ali, Roshan

    2015-01-01

    First-principles calculations have been used to study the structural, elastic, electronic, magnetic and thermal properties of zinc blende Zn 1−x V x Te for x=0, 0.25, 0.50, 0.75 and 1 using the full-potential linearized augmented plane wave method (FP-LAPW) based on spin-polarized density functional theory (DFT). The electronic exchange-correlation potential is approached using the spin generalized gradient approximation (spin-GGA). The structural properties of the Zn 1−x V x Te alloys (x=0, 0.25, 0.50, 0.75 and 1) are given for the lattice constants and the bulk moduli and their pressure derivatives. The elastic constants C 11 , C 12 and C 44 are calculated using numerical first-principles calculations implemented in the WIEN2k package. An analysis of the band structures and the densities of states reveals that Zn 0.50 V 0.50 Te and Zn 0.75 V 0.25 Te exhibit a half-metallic character, while Zn 0.25 V 0.75 Te is nearly half-metallic. The band structure calculations are used to estimate the spin-polarized splitting energies Δ x (d) and Δ x (pd) produced by the V(3d)-doped and s(p)–d exchange constants N 0α (conduction band) and N 0β (valence band). The p–d hybridization reduces the magnetic moment of V from its atomic charge value of 3µ B and creates small local magnetic moments on the nonmagnetic Zn and Te sites. Finally, we present the thermal effect on the macroscopic properties of these alloys, such as the thermal expansion coefficient, heat capacity and Debye temperature, based on the quasi-harmonic Debye model. - Highlights: • Some physical properties of Vanadium doped ZnTe have been investigated. • Structural parameters for the parent compounds compare well with the available data. • The elastic and thermal properties are studied for the first time

  5. Phase transitions in ZnTe co-doped with Mg and oxygen

    Energy Technology Data Exchange (ETDEWEB)

    Elyukhin, V.A.; Sorokina, L.P. [Departamento de Ingenieria Electrica, CINVESTAV-IPN, Av. IPN 2508, Mexico, D.F., 07360 (Mexico); Rodriguez de Santiago, M. [Departamento de Ingenieria Quimica Petrolera, IPN, Edif. 8, Mexico, D.F., 07738 (Mexico)

    2007-05-15

    Self-assembling of 1O4Mg tetrahedral clusters in ZnTe isoelectronically co-doped with Mg and oxygen in the ultra dilute oxygen impurity limit is described by a phase diagram. The occurrence of 1O4Mg clusters is a result of the second-order transition. The final stage of self-assembling when all oxygen impurities are in 1O4Mg clusters has to be reached also as a result of the second-order transition at the temperature close to the temperature of the occurrence of these clusters. The conditions of these phase transitions are obtained. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  6. XA readout chip characteristics and CdZnTe spectral measurements

    International Nuclear Information System (INIS)

    Barbier, L.M.; Birsa, F.; Odom, J.

    1999-01-01

    The authors report on the performance of a CdZnTe (CZT) array readout by an XA (X-ray imaging chip produced at the AMS foundry) application specific readout chip (ASIC). The array was designed and fabricated at NASA/Goddard Space Flight Center (GSFC) as a prototype for the Burst Arc-Second Imaging and Spectroscopy gamma-ray instrument. The XA ASIC was obtained from Integrated Detector and Electronics (IDE), in Norway. Performance characteristics and spectral data for 241 Am are presented both at room temperature and at -20 C. The measured noise (σ) was 2.5 keV at 60 keV at room temperature. This paper represents a progress report on work with the XA ASIC and CZT detectors. Work is continuing and in particular, larger arrays are planned for future NASA missions

  7. Study on Characteristic of CdZnTe Semiconductor Detectors for Alpha Particle Measurement

    International Nuclear Information System (INIS)

    Kang, Sang Mook; Ha, Jang Ho; Kim, Yong Kyun; Park, Se Hwan; Kim, Han Soo; Chung, Chong Eun

    2005-01-01

    The last 2-3 years have seen continued effort in the development of a wide band gap room-temperature compound semiconductor devices aimed principally at photon imaging covering hard X-rays, synchrotrons, and low to medium energy gamma rays. Especially, among the semiconductor materials of a wide band gap, CdZnTe(CZT) has commonly used X-ray and gammaray detection applications because of the opportunity to achieve and excellent spectral and spatial resolution. It has recently been demonstrated that CZT can be used as an ancillary detector with the ability to detect both alpha particles and X-ray at room temperature. CZT detectors are relatively inexpensive compared with some silicon detectors, and are priced about the same as amorphous silicon and photodiodes which are routinely used for charged particle detection. In this paper, we investigated the use of the CZT semiconductor material as an alpha particles detector

  8. Excitation and recombination of donor-acceptor pairs in ZnTe

    International Nuclear Information System (INIS)

    Nakashima, S.; Yasuda, S.

    1979-01-01

    The photoluminescence spectra and its excitation spectra of the donor-acceptor pairs are observed in ZnTe crystals doped with Li and As in the region below the bandgap energy. The relaxation of electrons and holes into the first excited state of d-a pairs is studied for the three excitation processes: (1) bound-to-bound transitions, (2) bound-to-free transitions, and (3) free-to-free transitions. It is concluded that most of the electrons and holes at the excited states of each impurity level are relaxed rapidly into their ground states before the occurrence of the recombination involving the excited states. For the excitation process (2), conduction electrons are preferentially trapped by positively charged pairs. The redistribution of bound holes by hopping is suggested to explain the broad d-a emission band observed for the bound-to-free excitation for very distant pairs. (author)

  9. Evaluation of CdZnTe as neutron detector around medical accelerators

    International Nuclear Information System (INIS)

    Martin-Martin, A.; Iniguez, M. P.; Luke, P. N.; Barquero, R.; Lorente, A.; Morchon, J.; Gallego, E.; Quincoces, G.; Marti-Climent, J. M.

    2009-01-01

    The operation of electron linear accelerators (LINACs) and cyclotrons can produce a mixed gamma-neutron field composed of energetic neutrons coming directly from the source and scattered lower energy neutrons. The thermal neutron detection properties of a non-moderated coplanar-grid CdZnTe (CZT) gamma-ray detector close to an 18 MV electron LINAC and an 18 MeV proton cyclotron producing the radioisotope 18 F for positron emission tomography are investigated. The two accelerators are operated at conditions producing similar thermal neutron fluence rates of the order of 104 cm -2 s -1 at the measurement locations. The counting efficiency of the CZT detector using the prompt 558 keV photopeak following 113 Cd thermal neutron capture is evaluated and a good neutron detection performance is found at the two installations. (authors)

  10. Gas filled prototype of a CdZnTe pixel detector

    International Nuclear Information System (INIS)

    Ramsey, B.; Sharma, D.; Sipila, H.; Gostilo, V.; Loupilov, A.

    2001-01-01

    CdZnTe pixel structures are currently the most promising detectors for the focal planes of hard X-ray telescopes, for astronomical observation in the range 5-100 keV. In Sharma et al. (Proc. SPIE 3765 (1999) 822) and Ramsey et al. (Nucl. Instrum. Methods A 458 (2001) 55) we presented preliminary results on the development of prototype 4x4 CdZnTe imaging detectors operated under vacuum. These pixel detectors were installed inside vacuum chambers on three-stage Peltier coolers providing detector temperatures down to -40 deg. C. A miniature sputter ion pump inside each chamber maintained the necessary vacuum of 10 -5 Torr. At a temperature of -20 deg. C we achieved an FWHM energy resolution of between 2% and 3% at 60 keV and ∼15% at 5.9 keV; however, the dependency on temperature was weak and at +20 deg. C the respective resolutions were 3% and 20%. As the detectors could be operated at room temperature without loss of their good characteristics it was possible to exclude the sputter ion pump and fill the chamber with dry nitrogen instead. We have tested a nitrogen-filled CdZnTe (5x5x1 mm 3 ) prototype having 0.65x0.65 mm 2 readout pads on a 0.75 mm pitch. The interpixel resistance at an applied voltage of 10 V was higher than 50 GΩ and the pixel leakage currents at room temperature with a bias of 200 V between each pad and the common electrode did not exceed 0.8 nA. The pixel detector inside the microassembly, which also contained the input stages of the preamplifiers, was installed on a Peltier cooler to maintain the detector temperature at +20 deg. C. To define real leakage currents of the pixels in their switched-on state we have checked the voltage on the preamplifiers feedback resistors. The resulting currents were 10-50 pA at a detector bias of 500 V. Under test, the typical energy resolution per pixel at +20 deg. C was ∼3% at energy 59.6 keV and ∼20% at energy 5.9 keV, which are similar to the values obtained in the vacuum prototype at room temperature

  11. Simulation of the anode structure for capacitive frisch grid CdZnTe detectors

    International Nuclear Information System (INIS)

    Min Jiahua; Shi Zhubin; Sang Wenbin; Zhao Hengyu; Teng Jianyong; Qian Yongbiao; Liu Jishan

    2009-01-01

    CdZnTe (CZT) capacitive Frisch grid detectors can achieve a higher detecting resolution. The anode structrure might have an important role in improving the weighting potential distribution of the detectors. In this paper, four anode structures of capacitive Frisch grid structures have been analyzed with FE simulation, based on a 3-dimensional weighting potential analysis. The weighting potential distributions in modified anode devices (Model B, C and D) are optimized compared with a square device (Model A). In model C and D, the abrupt weighting potential can be well modified. However, with increased radius of the circular electrode in Model C the weighting potential platform away from the anode becomes higher and higher and in Model D, the weighting potential does not vary too much. (authors)

  12. Comparison of CdZnTe neutron detector models using MCNP6 and Geant4

    Science.gov (United States)

    Wilson, Emma; Anderson, Mike; Prendergasty, David; Cheneler, David

    2018-01-01

    The production of accurate detector models is of high importance in the development and use of detectors. Initially, MCNP and Geant were developed to specialise in neutral particle models and accelerator models, respectively; there is now a greater overlap of the capabilities of both, and it is therefore useful to produce comparative models to evaluate detector characteristics. In a collaboration between Lancaster University, UK, and Innovative Physics Ltd., UK, models have been developed in both MCNP6 and Geant4 of Cadmium Zinc Telluride (CdZnTe) detectors developed by Innovative Physics Ltd. Herein, a comparison is made of the relative strengths of MCNP6 and Geant4 for modelling neutron flux and secondary γ-ray emission. Given the increasing overlap of the modelling capabilities of MCNP6 and Geant4, it is worthwhile to comment on differences in results for simulations which have similarities in terms of geometries and source configurations.

  13. Analyses on the measurement of leakage currents in CdZnTe radiation detectors

    International Nuclear Information System (INIS)

    Mescher, M.J.; Hoburg, J.F.; Schlesinger, T.E.; James, R.B.

    1999-01-01

    Models that place design constraints on devices which are used to measure the leakage currents in high-resistivity semiconductor materials are presented. If these design constraints are met, these models can then be used to quantitatively predict the surface sheet resistance of devices which are dominated by surface leakage currents. As a result, a means is provided to directly compare passivation techniques which are developed to decrease surface leakage currents. Furthermore, these models illustrate the necessity for inclusion of relevant geometrical data on sample size and shape and electrode configuration when reporting results of surface passivation techniques. These models specifically examine the case where a dc potential is applied across two electrodes on the surface of a semiconductor substrate which has a surface layer with lower resistivity than the bulk material. The authors describe several of the more common configurations used in analyzing passivation techniques for compounds of Cd 1-x Zn x Te (CZT) used for room-temperature radiation detection

  14. Application of CdZnTe Gamma-Ray Detector for Imaging Corrosion under Insulation

    Science.gov (United States)

    Abdullah, J.; Yahya, R.

    2007-05-01

    Corrosion under insulation (CUI) on the external wall of steel pipes is a common problem in many types of industrial plants. This is mainly due to the presence of moisture or water in the insulation materials. This type of corrosion can cause failures in areas that are not normally of a primary concern to an inspection program. The failures are often the result of localised corrosion and not general wasting over a large area. These failures can tee catastrophic in nature or at least have an adverse economic effect in terms of downtime and repairs. There are a number of techniques used today for CUI investigations. The main ones are profile radiography, pulse eddy current, ultrasonic spot readings and insulation removal. A new system now available is portable Pipe-CUI-Profiler. The nucleonic system is based on dual-beam gamma-ray absorption technique using Cadmium Zinc Telluride (CdZnTe) semiconductor detectors. The Pipe-CUI-Profiler is designed to inspect pipes of internal diameter 50, 65, 80, 90, 100, 125 and 150 mm. Pipeline of these sizes with aluminium or thin steel sheathing, containing fibreglass or calcium silicate insulation to thickness of 25, 40 and 50 mm can be inspected. The system has proven to be a safe, fast and effective method of inspecting pipe in industrial plant operations. This paper describes the application of gamma-ray techniques and CdZnTe semiconductor detectors in the development of Pipe-CUI-Profiler for non-destructive imaging of corrosion under insulation of steel pipes. Some results of actual pipe testing in large-scale industrial plant will be presented.

  15. Application of CdZnTe Gamma-Ray Detector for Imaging Corrosion under Insulation

    International Nuclear Information System (INIS)

    Abdullah, J.; Yahya, R.

    2007-01-01

    Corrosion under insulation (CUI) on the external wall of steel pipes is a common problem in many types of industrial plants. This is mainly due to the presence of moisture or water in the insulation materials. This type of corrosion can cause failures in areas that are not normally of a primary concern to an inspection program. The failures are often the result of localised corrosion and not general wasting over a large area. These failures can tee catastrophic in nature or at least have an adverse economic effect in terms of downtime and repairs. There are a number of techniques used today for CUI investigations. The main ones are profile radiography, pulse eddy current, ultrasonic spot readings and insulation removal. A new system now available is portable Pipe-CUI-Profiler. The nucleonic system is based on dual-beam gamma-ray absorption technique using Cadmium Zinc Telluride (CdZnTe) semiconductor detectors. The Pipe-CUI-Profiler is designed to inspect pipes of internal diameter 50, 65, 80, 90, 100, 125 and 150 mm. Pipeline of these sizes with aluminium or thin steel sheathing, containing fibreglass or calcium silicate insulation to thickness of 25, 40 and 50 mm can be inspected. The system has proven to be a safe, fast and effective method of inspecting pipe in industrial plant operations. This paper describes the application of gamma-ray techniques and CdZnTe semiconductor detectors in the development of Pipe-CUI-Profiler for non-destructive imaging of corrosion under insulation of steel pipes. Some results of actual pipe testing in large-scale industrial plant will be presented

  16. Optical and electrical properties of heterostructures Zn{sub 1-x}Mg{sub x}Se crystallized on ZnTe and GaAs crystals by MBE method; Wlasnosci optyczne i elektryczne heterostruktur Zn{sub 1-x}Mg{sub x}Se krystalizowanych metoda MBE w krysztalach ZnTe i GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Gapinski, A; Glowacki, G; Bala, W [Uniwersytet Mikolaja Kopernika, Torun (Poland). Inst. Fizyki

    1997-12-01

    Triple component mixing crystals Zn{sub 1-x}Mg{sub x}Se have been crystallized on ZnTe and GaAs monocrystals by means of molecular beam epitaxy method. The optical and electrical properties of such structures with different magnesium content have been studied. The applicability for optoelectronial and light-pipe use have been discussed as well. 6 refs, 4 figs.

  17. {\\rm{ZnO}}_{1-{{x}}}{\\rm{Te}}_{{{x}}} and {\\rm{ZnO}}_{1-{{x}}}\\rm{S}_{{{x}}} semiconductor alloys as competent materials for opto-electronic and solar cell applications: a comparative analysis

    Science.gov (United States)

    Das, Utsa; Pal, Partha P.

    2017-08-01

    ZnO1-x Te x ternary alloys have great potential to work as a photovoltaic (PV) absorber in solar cells. ZnO1-x S x is also a ZnO based alloy that have uses in solar cells. In this paper we report the comparative study of various parameters of ZnO1-x Te x and ZnO1-x S x for selecting it to be a competent material for solar cell applications. The parameters are mainly being calculated using the well-known VCA (virtual crystal approximation) and VBAC (Valence Band Anti-Crossing) model. It was certainly being analysed that the incorporation of Te atoms produces a high band gap lower than S atoms in the host ZnO material. The spin-orbit splitting energy value of ZnO1-x Te x was found to be higher than that of ZnO1-x S x . Beside this, the strain effects are also higher in ZnO1-x Te x than ZnO1-x S x . The remarkable notifying result which the paper is reporting is that at a higher percentage of Te atoms in ZnO1-x Te x , the spin-orbit splitting energy value rises above the band gap value, which signifies a very less internal carrier recombination that decreases the leakage current and increases the efficiency of the solar cell. Moreover, it also covers a wide wavelength range compared to ZnO1-x S x .

  18. Defect Tolerance to Intolerance in the Vacancy-Ordered Double Perovskite Semiconductors Cs 2 SnI 6 and Cs 2 TeI 6

    Energy Technology Data Exchange (ETDEWEB)

    Maughan, Annalise E.; Ganose, Alex M.; Bordelon, Mitchell M.; Miller, Elisa M.; Scanlon, David O.; Neilson, James R.

    2016-07-13

    Vacancy-ordered double perovskites of the general formula, A2BX6, are a family of perovskite derivatives composed of a face-centered lattice of nearly isolated [BX6] units with A-site cations occupying the cuboctahedral voids. Despite the presence of isolated octahedral units, the close-packed iodide lattice provides significant electronic dispersion, such that Cs2SnI6 has recently been explored for applications in photovoltaic devices. To elucidate the structure-property relationships of these materials, we have synthesized the solid solution Cs2Sn1-xTexI6. However, even though tellurium substitution increases electronic dispersion via closer I-I contact distances, the substitution experimentally yields insulating behavior from a significant decrease in carrier concentration and mobility. Density functional calculations of native defects in Cs2SnI6 reveal that iodine vacancies exhibit a low enthalpy of formation and the defect energy level is a shallow donor to the conduction band, rendering the material tolerant to these defect states. The increased covalency of Te-I bonding renders the formation of iodine vacancy states unfavorable, and is responsible for the reduction in conductivity upon Te substitution. Additionally, Cs2TeI6 is intolerant to the formation of these defects, as the defect level occurs deep within the band gap and thus localizes potential mobile charge carriers. In these vacancy-ordered double perovskites, the close-packed lattice of iodine provides significant electronic dispersion, while the interaction of the B- and X-site ions dictates the properties as they pertain to electronic structure and defect tolerance. This simplified perspective -- based on extensive experimental and theoretical analysis -- provides a platform from which to understand structure-property relationships in functional perovskite halides.

  19. One-dimensional zinc selenophosphates: A{sub 2}ZnP{sub 2}Se{sub 6} (A = K, Rb, Cs)

    Energy Technology Data Exchange (ETDEWEB)

    Haynes, Alyssa S.; Lee, Katherine; Kanatzidis, Mercouri G. [Department of Chemistry, Northwestern University, Evanston, IL (United States)

    2016-09-15

    The new compounds A{sub 2}ZnP{sub 2}Se{sub 6} (A = K, Rb, Cs) were synthesized via molten salt flux syntheses. The crystals feature one-dimensional {sup 1}/{sub ∞}[ZnP{sub 2}Se{sub 6}]{sup 2-} chains charge balanced by alkali metal ions between the chains. K{sub 2}ZnP{sub 2}Se{sub 6} crystallizes in the monoclinic space group P2{sub 1}/c; cell parameters a = 12.537(3) Aa, b = 7.2742(14) Aa, c = 14.164(3) Aa, β = 109.63(3) , Z = 4, and V = 1216.7(4) Aa{sup 3}. Rb{sub 2}ZnP{sub 2}Se{sub 6} and Cs{sub 2}ZnP{sub 2}Se{sub 6} are isotypic, crystallizing in the triclinic space group P anti 1. Rb{sub 2}ZnP{sub 2}Se{sub 6} has cell parameters of a = 7.4944(15) Aa, b = 7.6013(15) Aa, c = 12.729(3) Aa, α = 96.57(3) , β = 105.52(3) , γ = 110.54(3) , Z = 2, and V = 636.6(2) Aa{sup 3}. Cs{sub 2}ZnP{sub 2}Se{sub 6} has cell parameters of a = 7.6543(6) Aa, b = 7.7006(6) Aa, c = 12.7373(11) Aa, α = 97.007(7) , β = 104.335(7) , γ = 109.241(6) , Z = 2, and V = 669.54(10) Aa{sup 3}. (Copyright copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  20. The Influence of Oxygen Substitution on the Optoelectronic Properties of ZnTe

    Directory of Open Access Journals (Sweden)

    Imad Khan

    2016-01-01

    Full Text Available We communicate theoretical results of the structural, electronic, and optical properties of ZnOxTe1-x (0≤x≤1 in the zincblende structure. The calculations are performed using full potential linearized augmented plane waves (FP-LAPW method, based on density functional theory (DFT. The structural properties are calculated with simple GGA (PBEsol, while the electronic and optical properties are calculated using mBJ-GGA. The mBJ-GGA is used to properly treat the active d-orbital in their valence shell. The ZnOTe alloy is highly lattice mismatched and consequently the lattice constants and bulk moduli largely deviate from the linear behavior. The calculated bandgaps are in agreement with the experimentally measured values, where the nature of bandgaps is direct for the whole range of x except at x=0.25. We also calculate the bandgap bowing parameter from our accurate bandgaps and resolve the existing controversy in this parameter.

  1. Ab initio study of lattice instabilities of zinc chalcogenides ZnX (X=O, S, Se, Te induced by ultrafast intense laser irradiation

    Directory of Open Access Journals (Sweden)

    Dahua Ren

    2017-09-01

    Full Text Available Ab initio calculations of lattice constants, lattice stabilities of ZnX (X=O, S, Se, Te at different electronic temperatures (Te have been performed using generalized gradient approximation (GGA pseudopotential method within the density functional theory (DFT. The calculated phonon frequencies of ZnX at Te = 0 eV accord well with the experimental and other theoretical values. Firstly, it is indicated that the lattice constants of ZnX increase and all the phonon frequencies reduce as Te increases. Additionally, the transverse-acoustic phonon frequencies of ZnX are imaginary with the elevation of Te, namely the lattices of ZnX become unstable under ultrafast intense laser irradiation. Moreover, the transverse optical mode-longitudinal optical mode (LO-TO splitting degree of ZnX (X=S, Se, Te gradually decreases as the electronic temperature increases, mainly due to the reason that the electronic excitation weakens the strength ionicity of ionic crystal ZnX under intense laser irradiation. However, the LO-TO splitting degree of ZnO firstly increases and then decreases with the increase of electronic temperature. After that, it can be helpful for understanding the mechanism of ultrafast intense laser induced semiconductors damage.

  2. Very high resolution detection of gamma radiation at room-temperature using P-I-N detectors of CdZnTe and HgCdTe

    Science.gov (United States)

    Hamilton, W. J.; Rhiger, D. R.; Sen, S.; Kalisher, M. H.; James, K.; Reid, C. P.; Gerrish, V.; Baccash, C. O.

    1994-08-01

    High-energy photon detectors have been constructed by engineering and fabricating p-i-n diode structures consisting of bulk CdZnTe and epitaxial HgCdTe. The p-i-n structure was obtained by liquid-phase epitaxial growth of p and n doped HgCdTe layers on 'intrinsic' CdZnTe material about 1mm thick and approximately 25mm square. Curve tracing shows I-V curves with diode characteristics having resistivity above 1011 Omega -cm and leakage current of less than 400 pA to about - 60V reverse bias on a typical test piece approximately 5 x 8 x 1 mm. Spectra of similar test pieces have been obtained at room temperature with various nuclear isotopic sources over the range of 22 keV to 662 keV which show exceptionally high energy resolution. Resolution as good as 1.82% FWHM was obtained for the 356 keV line of 133Ba with a P/V = 3.4. The performance of these detectors combined with contemporary infrared technology capable of fabricating 2D arrays of these II-VI materials opens up manifold exciting applications in astrophysics, medical, industrial, environmental, and defense spectroscopy and imaging.

  3. Fabrication and photocatalytic activity of high-efficiency visible-light-responsive photocatalyst ZnTe/TiO2 nanotube arrays

    International Nuclear Information System (INIS)

    Liu Yutang; Zhang Xilin; Liu Ronghua; Yang Renbin; Liu Chengbin; Cai Qingyun

    2011-01-01

    A new ZnTe modified TiO 2 nanotube (NT) array catalyst was prepared by pulse potential electrodeposition of ZnTe nanoparticles (NPs) onto TiO 2 NT arrays, and its application for photocatalytic degradation of anthracene-9-carboxylic acid (9-AnCOOH) was investigated. The even distribution of ZnTe NPs was well-proportionately grown on the top surface of the TiO 2 NT while without clogging the tube entrances. Compared with the unmodified TiO 2 NT, the ZnTe modified TiO 2 NT (ZnTe/TiO 2 NT) showed significantly enhanced photocatalytic activity towards 9-AnCOOH under simulated solar light. After 70 min of irradiation, 9-AnCOOH was degraded with the removal ratio of 45% on the bare TiO 2 NT, much lower than 80%, 90%, and 100% on the ZnTe/TiO 2 NT with the ZnTe NPs prepared under the pulsed 'on' potentials of -0.8, -1.0, and -2.0 V, respectively. The increased photodegradation efficiency mainly results from the improved photocurrent density as results of enhanced visible-light absorption and decreased hole-electron recombination due to the presence of narrow-band-gap p-type semiconductor ZnTe. -- Graphical abstract: Surface-view SEM images of ZnTe/TiO 2 NT prepared under -2.0 V, and the inset is the corresponding enlarged drawings. Display Omitted Research highlights: → A new method to deposit chalcogenides of transition metals on the TiO 2 nanotubes. → The even distribution of ZnTe nanoparticles was well-proportionedly grown onto TiO 2 NT arrays. → ZnTe/TiO 2 NT showed remarkably increased photocurrent density. → ZnTe/TiO 2 NT showed good photocatalytic performance. → The prepared new catalyst has a promising application in practical systems.

  4. Sensing application of an optical fiber dip coated with L-Cystein ethyl ester hydrochloride capped ZnTe quantum dots

    Directory of Open Access Journals (Sweden)

    Sundaray Madhulita

    2016-09-01

    Full Text Available Optical fiber in conjunction with ZnTe quantum dots (QDs is investigated for sensing application. ZnTe QDs, are synthesized by a simple chemical bottom up approach. Quantum dots are capped with L-Cystein ethyl ester hydrochloride (LEEH, to increase their stability. Then LEEH capped ZnTe QDs, whose size is estimated as 2.29 nm by effective mass approximation (EMA, are dip-coated on a cladding removed optical fiber. Different concentrations of alcohol and ammonia are used to investigate the sensing behavior. It is found that sensitivity of the sensor increases with the use of QDs for both alcohol and ammonia.

  5. Compositions of Mg and Se, surface morphology, roughness and Raman property of Zn1-xMgxSeyTe1-y layers grown at various substrate temperatures or dopant transport rates by MOVPE

    Science.gov (United States)

    Nishio, Mitsuhiro; Saito, Katsuhiko; Urata, Kensuke; Okamoto, Yasuhiro; Tanaka, Daichi; Araki, Yasuhiro; Abiru, Masakatsu; Mori, Eiichiro; Tanaka, Tooru; Guo, Qixin

    2015-03-01

    The growth of undoped and phosphorus (P)-doped Zn1-xMgxSeyTe1-y layers on (100) ZnTe substrates by metalorganic vapor phase epitaxy was carried out. The compositions of Mg and Se, surface morphology, roughness and Raman property were characterized as a function of substrate temperature. Not only the compositions of Mg and Se but also the crystal quality of undoped Zn1-xMgxSeyTe1-y layer strongly depended upon the substrate temperature. Furthermore, the growth of Zn1-xMgxSeyTe1-y layer nearly-lattice-matched to ZnTe substrate was achieved independent of the transport rate of trisdimethylaminophosphorus. Undoped Zn1-xMgxSeyTe1-y layer nearly-lattice-matched to ZnTe led to improvement of surface roughness. On the other hand, P doping brought about deterioration of crystalline quality.

  6. A new oxytelluride: Perovskite and CsCl intergrowth in Ba{sub 3}Yb{sub 2}O{sub 5}Te

    Energy Technology Data Exchange (ETDEWEB)

    Whalen, J.B., E-mail: icatchsnook@yahoo.com [The National High Magnetic Field Laboratory, Condensed Matter Science Department, 1800 E. Paul Dirac Drive, Tallahassee, FL 32310 (United States); Specialized Crystal Processing, Inc., 400 Capital Circle SE, Suite 18227, Tallahassee, FL 32301-3839 (United States); Besara, T. [The National High Magnetic Field Laboratory, Condensed Matter Science Department, 1800 E. Paul Dirac Drive, Tallahassee, FL 32310 (United States); The Florida Agricultural and Mechanical University-The Florida State University (FAMU-FSU) College of Engineering, Department of Chemical and Biomedical Engineering, 2525 Pottsdamer Street, Tallahassee, FL 32310-6046 (United States); Vasquez, R.; Herrera, F. [The Florida Agricultural and Mechanical University-The Florida State University (FAMU-FSU) College of Engineering, Department of Chemical and Biomedical Engineering, 2525 Pottsdamer Street, Tallahassee, FL 32310-6046 (United States); Sun, J. [The National High Magnetic Field Laboratory, Condensed Matter Science Department, 1800 E. Paul Dirac Drive, Tallahassee, FL 32310 (United States); The Florida Agricultural and Mechanical University-The Florida State University (FAMU-FSU) College of Engineering, Department of Chemical and Biomedical Engineering, 2525 Pottsdamer Street, Tallahassee, FL 32310-6046 (United States); Ramirez, D. [The National High Magnetic Field Laboratory, Condensed Matter Science Department, 1800 E. Paul Dirac Drive, Tallahassee, FL 32310 (United States); The Florida Agricultural and Mechanical University-The Florida State University (FAMU-FSU) College of Engineering, Department of Chemical and Biomedical Engineering, 2525 Pottsdamer Street, Tallahassee, FL 32310-6046 (United States); Specialized Crystal Processing, Inc., 400 Capital Circle SE, Suite 18227, Tallahassee, FL 32301-3839 (United States); Stillwell, R.L. [The National High Magnetic Field Laboratory, Condensed Matter Science Department, 1800 E. Paul Dirac Drive, Tallahassee, FL 32310 (United States); and others

    2013-07-15

    The new oxytelluride Ba{sub 3}Yb{sub 2}O{sub 5}Te was obtained from an alkaline earth flux. Ba{sub 3}Yb{sub 2}O{sub 5}Te crystallizes in the tetragonal space group P4/mmm (#123), with a=4.3615(3) Å and c=11.7596(11) Å, Z=1. The structure combines two distinct building blocks, a Ba{sub 2}Yb{sub 2}O{sub 5} perovskite-like double layer with square bipyramidal coordination of the ytterbium ions, and a CsCl-type BaTe layer. Short range magnetic order is apparent at below 5 K, with the magnetic behavior above this temperature dominated by crystal field effects. The structure may be considered as an analog to the Ruddlesden–Popper phases, where the NaCl-type layer has been replaced by the CsCl-type layer. The two-dimensional magnetic behavior is expected based on the highly anisotropic nature of the structure. - Graphical abstract: Optical images of Ba{sub 3}Yb{sub 2}O{sub 5}Te in transmission (left) and reflected (right) light, with atomic unit cell overlay. - Highlights: • Single crystal synthesis and characterization of a new phase, Ba{sub 3}Yb{sub 2}O{sub 5}Te. • The structure features the BaTe high pressure polymorph intergrowth. • Magnetic susceptibility measurements show short range 2 dimensional ordering. • Heat capacity measurements show a feature at the magnetic ordering temperature. • Optical reflectivity measurements show a {sup 2}F{sub 7/2}→{sup 2}F{sub 5/2} absorption at 976 nm.

  7. Point Defect Properties of Cd(Zn)Te and TlBr for Room-Temperature Gamma Radiation Detectors

    Science.gov (United States)

    Lordi, Vincenzo

    2013-03-01

    The effects of various crystal defects in CdTe, Cd1-xZnxTe (CZT), and TlBr are critical for their performance as room-temperature gamma radiation detectors. We use predictive first principles theoretical methods to provide fundamental, atomic scale understanding of the defect properties of these materials to enable design of optimal growth and processing conditions, such as doping, annealing, and stoichiometry. Several recent cases will be reviewed, including (i) accurate calculations of the thermodynamic and electronic properties of native point defects and point defect complexes in CdTe and CZT; (ii) the effects of Zn alloying on the native point defect properties of CZT; (iii) point defect diffusion and binding related to Te clustering in Cd(Zn)Te; (iv) the profound effect of native point defects--principally vacancies--on the intrinsic material properties of TlBr, particularly electronic and ionic conductivity; (v) tailored doping of TlBr to independently control the electronic and ionic conductivity; and (vi) the effects of metal impurities on the electronic properties and device performance of TlBr detectors. Prepared by LLNL under Contract DE-AC52-07NA27344 with support from the National Nuclear Security Administration Office of Nonproliferation and Verification Research and Development NA-22.

  8. Modified band alignment effect in ZnO/Cu2O heterojunction solar cells via Cs2O buffer insertion

    Science.gov (United States)

    Eom, Kiryung; Lee, Dongyoon; Kim, Seunghwan; Seo, Hyungtak

    2018-02-01

    The effects of a complex buffer layer of cesium oxide (Cs2O) on the photocurrent response in oxide heterojunction solar cells (HSCs) were investigated. A p-n junction oxide HSC was fabricated using p-type copper (I) oxide (Cu2O) and n-type zinc oxide (ZnO); the buffer layer was inserted between the Cu2O and fluorine-doped tin oxide (FTO). Ultraviolet-visible (UV-vis) and x-ray and ultraviolet photoelectron spectroscopy analyses were performed to characterize the electronic band structures of cells, both with and without this buffer layer. In conjunction with the measured band electronic structures, the significantly improved visible-range photocurrent spectra of the buffer-inserted HSC were analyzed in-depth. As a result, the 1 sun power conversion efficiency was increased by about three times by the insertion of buffer layer. The physicochemical origin of the photocurrent enhancement was mainly ascribed to the increased photocarrier density in the buffer layer and modified valence band offset to promote the effective hole transfer at the interface to FTO on the band-alignment model.

  9. Development of flat panel X-ray detector utilizing a CdZnTe film as conversion layer

    International Nuclear Information System (INIS)

    Tokuda, Satoshi; Kishihara, Hiroyuki; Kaino, Masatomo; Sato, Toshiyuki

    2006-01-01

    A polycrystalline CdZnTe film formed by the CSS (closed-spaced sublimation) method is one of the most promising materials as a conversion layer of next-generation highly efficient flat-panel X-ray detectors. Therefore, we have developed a prototype of a new flat-panel X-ray detector (a sensing region of 3 inches by 3 inches) with the film and evaluated its commercial feasibility. This paper describes evaluation of the physical and imaging properties of the prototype and explains the features of the CdZnTe film and the construction, specifications, and fabrication procedures of the prototype. Also included in this paper are formation of a semiconductor thin film barrier layer by the CBD (chemical bath deposition) method and conjunction of a sensor substrate and a TFT array substrate with the bump electrodes formed by screen printing, both of which we have developed during the course of the development of the prototype. (author)

  10. Laser ablation and photostimulated passivation of the surface of Cd1–хZnхTe crystals

    Directory of Open Access Journals (Sweden)

    Zagoruiko Yu. A.

    2011-06-01

    Full Text Available A new physical method of Cd1–хZnхTe-detectors passivation is proposed — the treatment of crystal surface by a laser ablation (LA with subsequent photostimulated passivation (PhSP, during wich a high-resistance oxide layer is formed on it’s surface after the surface cleaning under intensive light irradiation effect. It is shown that the method of LA+PhSP is manufacturable and in comparison with PhSP and PhESP methods developed earlier provides a thick, homogeneous and high-oxide films, which significantly increases the surface resistivity of Cd1–хZnхTe samples and reduces leakage currents in them.

  11. Origin of localized states in zinc-blende ZnCdSe thin films and the influence on carrier relaxation of self-assembled ZnTe/ZnCdSe quantum dots

    International Nuclear Information System (INIS)

    Lee, Ling; Dai, Yue-Ru; Yang, Chu-Shou; Fan, Wen-Chung; Chou, Wu-Ching

    2015-01-01

    Highlights: • The localized emission in zinc-blende ZnCdSe is induced by excess selenium. • An optimized growth is demonstrated as the VI/II ratio approaches unity. • Size-independent lifetimes are observed in ZnTe/ZnCdSe quantum dots. • Localized electrons in the capping layer dominate size-independent lifetimes. - Abstract: This study discovered the origin of deep level emission in zinc-blende ZnCdSe thin films grown by molecular beam epitaxy, in which a localization behavior was noticed. Pronounced deep level emission observed in films grown under a VI/II ratio of 1.74 (Se-accumulated regime) could be suppressed by a lower VI/II ratio of 1.04 (intermediate regime) and 0.74 (metal-rich regime). Hence the localized states could be correlated to excess selenium accumulated at the growth surface. The localized states also influence the carrier relaxation process of self-assembled ZnTe quantum dots embedded in a ZnCdSe matrix. Once quantum dots surmount the wetting layer, localized electrons in the capping layer dominate the type-II transition and exhibit size-independent lifetimes

  12. Depuration and uptake kinetics of I, CS, MN, ZN and CD by the earthworm (lumbricus terrestris) in radiotracer-spiked litter

    International Nuclear Information System (INIS)

    Sheppard, S.C.; Evenden, W.G.; Cornwell, T.C.

    1997-01-01

    The relative depuration and uptake kinetics of contaminants should be known to interpret appropriately the use of organisms such as earthworms in environmental bioassays and monitoring. For example, 14-d earthworm bioassays should be interpreted with the knowledge that some contaminants will continue to accumulate in tissues for months. The radiotracers 125 I, 134 Cs, 54 Mn, 65 Zn, and 109 Cd were applied to deciduous litter and specimens of Lumbricus terrestris were exposed, either to litter alone or to litter on the top of soil columns. Depuration was monitored for 120 d and uptake, in a separate experiment, for 20 d. Both depuration and uptake were described using two-phase, first-order statistical models. Gut clearance had a mean half-time of 1.4 d. The mean half-time for physiological depuration decreased from I (210 d) > Cd (150 d) > Zn (69 d) > Mn (40 d) > Cs (24 d). Both the deputation and the uptake experiments were necessary to resolve even partially the multiphase processes. Earthworm/soil dry weight concentration ratios decreased from Cd > Zn > I ≥ Cs ≥ Mn. The very slow kinetics indicate that tissue concentrations will increase continuously for a long time, with important implications for subsequent food-chain transfers. (author)

  13. Estimation of Th, Cs, Sr, I, Co, Fe, Zn, Ca and K in major food components using neutron activation analysis technique

    International Nuclear Information System (INIS)

    Nair, Suma; Bhati, Sharda

    2010-01-01

    The concentration of some radiologically and nutritionally important trace elements: Th, Cs, Sr, I, Co, Fe, Zn, Ca and K were determined in major food components such as cereals, pulses, vegetables, fruits, milk etc. The trace elements in food samples were determined using neutron activation analysis technique which involves instrumental and radiochemical neutron activation analysis. Whereas, the trace elements Th, Cs, K and Sr, are important in radiation protection; Fe and Zn are of importance in nutrition studies and Ca and I have dual importance, both in nutrition and radiation protection. The results of analysis show that among the food materials, higher concentrations of Th, Cs, Sr, K, Fe, Zn and Co were found in cereals and pulses. In case of Ca, the milk appears to be the main contributor towards its dietary intake. The estimated concentrations of the trace elements in food components can be employed in determining the daily dietary intake of these elements which in turn can be used for their biokinetic studies. (author)

  14. Distribution coefficients of 134Cs, 60Co, 65Zn and 51Cr in different contaminated soils affected by organic waste disposal

    International Nuclear Information System (INIS)

    Metwally, E.

    2003-01-01

    Batch adsorption experiments were conducted with mixtures of solutes of different concentrations of some radionuclides as 1 34Sc, 6 0Co, 6 5Zn and 5 1Cr, in five different soils. The soils varied in their organic matter source and content due to prolonged irrigation with primary treated sewage effluent or untreated industrial wastewater. the distribution coefficients (K d ) were measured at different equilibrium times namely, 2, 24, 48, 72, 144 and 336 h. statistical correlation and curve fittings indicated that metal sorption into soils was influenced by the presence of clays, organic matter content and hydrous oxides of Fe and Mn. The highest log K d values were obtained in case of Cs in all investigated soils with a general mean of 1.878 0.28. Log K d for Cr exhibited a higher values than those did for at any tested soil (general mean 1.675 .33 and 1.658 0.24 for Cr and Co respectively). Zinc had the lowest log K d values, indicating that Cs is highly retained in soil than other tested elements and Zn is relatively mobile in soil than other tested elements. The investigated elements retention in soil could be arranged in the following order: Cs > Cr > Co > Zn. Soils enriched in organic matter exhibited the highest sorption caption capacity for all tested metals. Variability in the distribution coefficient due to soils and metals interactions were discussed

  15. Pulse shaping system research of CdZnTe radiation detector for high energy x-ray diagnostic

    Science.gov (United States)

    Li, Miao; Zhao, Mingkun; Ding, Keyu; Zhou, Shousen; Zhou, Benjie

    2018-02-01

    As one of the typical wide band-gap semiconductor materials, the CdZnTe material has high detection efficiency and excellent energy resolution for the hard X-ray and the Gamma ray. The generated signal of the CdZnTe detector needs to be transformed to the pseudo-Gaussian pulse with a small impulse-width to remove noise and improve the energy resolution by the following nuclear spectrometry data acquisition system. In this paper, the multi-stage pseudo-Gaussian shaping-filter has been investigated based on the nuclear electronic principle. The optimized circuit parameters were also obtained based on the analysis of the characteristics of the pseudo-Gaussian shaping-filter in our following simulations. Based on the simulation results, the falling-time of the output pulse was decreased and faster response time can be obtained with decreasing shaping-time τs-k. And the undershoot was also removed when the ratio of input resistors was set to 1 to 2.5. Moreover, a two stage sallen-key Gaussian shaping-filter was designed and fabricated by using a low-noise voltage feedback operation amplifier LMH6628. A detection experiment platform had been built by using the precise pulse generator CAKE831 as the imitated radiation pulse which was equivalent signal of the semiconductor CdZnTe detector. Experiment results show that the output pulse of the two stage pseudo-Gaussian shaping filter has minimum 200ns pulse width (FWHM), and the output pulse of each stage was well consistent with the simulation results. Based on the performance in our experiment, this multi-stage pseudo-Gaussian shaping-filter can reduce the event-lost caused by pile-up in the CdZnTe semiconductor detector and improve the energy resolution effectively.

  16. Characterization of large volume CdZnTe detectors with a quad-grid structure for the COBRA experiment

    Energy Technology Data Exchange (ETDEWEB)

    Rohatsch, Katja [TU Dresden, Institut fuer Kern- und Teilchenphysik, 01069 Dresden (Germany); Collaboration: COBRA-Collaboration

    2016-07-01

    The COBRA experiment uses room temperature semiconductor detectors made of Cadmium-Zinc-Telluride, which contains several double beta isotopes, to search for neutrinoless double beta-decay. To compensate for poor hole transport in CdZnTe the detectors are equipped with a coplanar grid (CPG) instead of a planar anode. Currently, a demonstrator setup consisting of 64 1 cm{sup 3} CPG-detectors is in operation at the LNGS in Italy to prove the concept and to determine the long-term stability of the detectors and the instrumentation. For a future large scale experiment it is planned to use larger CdZnTe detectors with a volume of 6 cm{sup 3}, because of the better surface-to-volume ratio and the higher full energy detection efficiency. This will also reduce the background contribution of surface contaminations. Before the installation at the LNGS the new detector design is validated and studied in detail. This talk presents a laboratory experiment for the characterization with γ-radiation of 6 cm{sup 3} CdZnTe quad-grid detectors. The anode of such a detector is divided into four sub-CPGs. The characterization routine consists of the determination of the optimal working point and two-dimensional spatially resolved scans with a highly collimated γ-source.

  17. Optical and electrical study of CdZnTe surfaces passivated by KOH and NH{sub 4}F solutions

    Energy Technology Data Exchange (ETDEWEB)

    Zázvorka, J., E-mail: zazvorka.jakub@gmail.com [Institute of Physics, Faculty of Mathematics and Physics, Charles University in Prague, Ke Karlovu 5, 121 16 Prague (Czech Republic); Franc, J.; Statelov, M.; Pekárek, J.; Veis, M.; Moravec, P. [Institute of Physics, Faculty of Mathematics and Physics, Charles University in Prague, Ke Karlovu 5, 121 16 Prague (Czech Republic); Mašek, K. [Department of Surface and Plasma Science, Faculty of Mathematics and Physics, Charles University in Prague, V Holešovičkách 2, CZ, 18000 Prague (Czech Republic)

    2016-12-15

    Highlights: • Surface of CdZnTe samples was passivated after chemical etching. • KOH and NH{sub 4}F solutions were used as passivation agents. • Growth of surface oxide after passivation is observed. • Surface oxide thickness was evaluated over time after chemical treatment. • Oxidation of the sample correlates with decreased leakage current. - Abstract: Performance of CdZnTe-based detectors is highly related to surface preparation. Mechanical polishing, chemical etching and passivation are routinely employed for this purpose. However, the relation between these processes and the detector performance in terms of underlying physical phenomena has not been fully explained. The dynamics and properties of CdZnTe surface oxide layers, created by passivation with KOH and NH4F/H2O2 solutions, were studied by optical ellipsometry and X-ray photoelectron spectroscopy (XPS). Thicknesses and growth rates of the surface oxide layers differed for each of the passivation methods. Leakage currents which influence the final spectral resolution of the detector were measured simultaneously with ellipsometry. Results of both optical and electrical investigation showed the same trends in the time evolution and correlated to each other. NH4F/H2O2 passivation showed to be a method which produces the most desirable properties of the surface oxide layer.

  18. Electrical properties of Au/CdZnTe/Au detectors grown by the boron oxide encapsulated Vertical Bridgman technique

    Energy Technology Data Exchange (ETDEWEB)

    Turturici, A.A. [Dipartimento di Fisica e Chimica, Università di Palermo, Viale delle Scienze, Edificio 18, Palermo 90128 (Italy); Abbene, L., E-mail: leonardo.abbene@unipa.it [Dipartimento di Fisica e Chimica, Università di Palermo, Viale delle Scienze, Edificio 18, Palermo 90128 (Italy); Gerardi, G. [Dipartimento di Fisica e Chimica, Università di Palermo, Viale delle Scienze, Edificio 18, Palermo 90128 (Italy); Benassi, G. [due2lab s.r.l., Via Paolo Borsellino 2, Scandiano, 42019 Reggio Emilia (Italy); Bettelli, M.; Calestani, D. [IMEM/CNR, Parco Area delle Scienze 37/A, Parma 43100 (Italy); Zambelli, N. [due2lab s.r.l., Via Paolo Borsellino 2, Scandiano, 42019 Reggio Emilia (Italy); Raso, G. [Dipartimento di Fisica e Chimica, Università di Palermo, Viale delle Scienze, Edificio 18, Palermo 90128 (Italy); Zappettini, A. [IMEM/CNR, Parco Area delle Scienze 37/A, Parma 43100 (Italy); Principato, F. [Dipartimento di Fisica e Chimica, Università di Palermo, Viale delle Scienze, Edificio 18, Palermo 90128 (Italy)

    2016-09-11

    In this work we report on the results of electrical characterization of new CdZnTe detectors grown by the Boron oxide encapsulated Vertical Bridgman technique (B-VB), currently produced at IMEM-CNR (Parma, Italy). The detectors, with gold electroless contacts, have different thicknesses (1 and 2.5 mm) and the same electrode layout, characterized by a central anode surrounded by a guard-ring electrode. Investigations on the charge transport mechanisms and the electrical contact properties, through the modeling of the measured current–voltage (I–V) curves, were performed. Generally, the detectors are characterized by low leakage currents at high bias voltages even at room temperature: 34 nA/cm{sup 2} (T=25 °C) at 10,000 V/cm, making them very attractive for high flux X-ray measurements, where high bias voltage operation is required. The Au/CdZnTe barrier heights of the devices were estimated by using the interfacial layer-thermionic-diffusion (ITD) model in the reverse bias voltage range. Comparisons with CdZnTe detectors, grown by Traveling Heater Method (THM) and characterized by the same electrode layout, deposition technique and resistivity, were also performed.

  19. Raman and photo-modulated reflectivity studies of ZnTe/InAs semiconductor heterostructure under hydrostatic pressure

    International Nuclear Information System (INIS)

    Thomas, R.J.; Boley, M.S.; Chandrasekhar, H.R.; Chandrasekhar, M.; Parks, C.; Ramdas, A.K.; Han, J.; Kobayashi, M.; Gunshor, R.L.

    1994-01-01

    The photo--modulated reflectivity spectrum of a biaxially-strained pseudomorphic ZnTe epilayer, grown on an InAs epilayer by molecular beam epitaxy is studied as a function of applied hydrostatic pressure at 80 K. With increasing hydrostatic compression, the biaxially compressive strain is progressively compensated by the pressure induced tensile strain. At approximately 55 kbars the epilayer becomes strain free, and is under a biaxial tension at higher pressures. The separation between the heavy hole and light hole signatures is superlinear in pressure, suggestive of a pressure dependent shear deformation potential constant for the valence and conduction bands. We also compare the pressure dependence of the Raman LO phonon of the ZnTe epilayer on InAs with that of a bulk ZnTe sample at 13 K. The pressure dependent strain is found to be linear. Accurate values of the first order strain derivatives of the LO-phonons and mode Grueneisen constants are obtained. copyright 1994 American Institute of Physics

  20. Influence of infrared stimulation on spectroscopy characteristics of co-planar grid CdZnTe detectors

    International Nuclear Information System (INIS)

    Fjodorov, V.; Ivanov, V.; Loutchanski, A.

    2015-01-01

    It was previously found that illumination with monochromatic infrared (IR) light with wavelengths close to the absorption edge of the CdZnTe exert significant positive influence on the spectrometric characteristics of quasi-hemispherical CdZnTe detectors at room temperature. In this paper, preliminary results of IR stimulation on the spectrometric characteristics of coplanar-grid CdZnTe detectors as well as results of further studies of planar and quasi-hemispherical detectors are presented. Coplanar-grid detectors of 10 mm x 10 mm x 10 mm from Redlen Technologies and commercial available IR LEDs with different wavelengths of 800-1000 nm were used in the experiments. Influence of intensity and direction of IR illumination on the detector's characteristics was studied. Analysis of signals shapes from the preamplifiers outputs at registration of alpha particles showed that IR illumination leads to a change in the shapes of these signals. This may indicate changes in electric fields distributions. An improvement in energy resolution at gamma-energy of 662 keV was observed with quasi-hemispherical and co-planar detectors at the certain levels of IR illumination intensity. The most noticeable effect of IR stimulation was observed with quasi-hemispherical detectors. It is due with optimization of charge collection conditions in the quasi-hemispherical detectors under IT stimulation. (authors)

  1. Rapid pulse annealing of CdZnTe detectors for reducing electronic noise

    Science.gov (United States)

    Voss, Lars; Conway, Adam; Nelson, Art; Nikolic, Rebecca J.; Payne, Stephen A.; Swanberg, Jr., Erik Lars

    2018-05-01

    A combination of doping, rapid pulsed optical and/or thermal annealing, and unique detector structure reduces or eliminates sources of electronic noise in a CdZnTe (CZT) detector. According to several embodiments, methods of forming a detector exhibiting minimal electronic noise include: pulse-annealing at least one surface of a detector comprising CZT for one or more pulses, each pulse having a duration of .about.0.1 seconds or less. The at least one surface may optionally be ion-implanted. In another embodiment, a CZT detector includes a detector surface with two or more electrodes operating at different electric potentials and coupled to the detector surface; and one or more ion-implanted CZT surfaces on or in the detector surface, each of the one or more ion-implanted CZT surfaces being independently connected to one of the two or more electrodes and the surface of the detector. At least two of the ion-implanted surfaces are in electrical contact.

  2. Optical spectroscopy of lanthanide ions in ZnO-TeO2 glasses.

    Science.gov (United States)

    Rolli, R; Wachtler, K; Wachtler, M; Bettinelli, M; Speghini, A; Ajò, D

    2001-09-01

    Zinc tellurite glasses of compositions 19ZnO-80TeO2-1Ln2O3 with Ln = Eu, Er, Nd and Tm were prepared by melt quenching. The absorption spectra were measured and from the experimental oscillator strengths of the f-->f transitions the Judd-Ofelt parameters ohm(lambda) were obtained. The values of the ohm(lambda) parameters are in the range usually observed for oxide glasses. For Nd3+ and Er3+, luminescence spectra in the near infrared were measured and the stimulated emission cross sections sigma(p) were evaluated for some laser transitions. The high values of sigma(p), especially for Nd3+, make them possible candidates for optical applications. Fluorescence line narrowing (FLN) spectra of the Eu3+ doped glass were measured at 20 K, and the energies of the Stark components of the 7F1 and 7F2 states were obtained. A crystal field analysis was carried out assuming a C2v site symmetry. The behaviour of the crystal field ratios B22/B20 and B44/B40 agrees reasonably well with the values calculated using the geometric model proposed by Brecher and Riseberg. The crystal field strength at the Eu3+ sites appears to be very low compared to other oxide glasses.

  3. Direct conversion Si and CdZnTe detectors for digital mammography

    CERN Document Server

    Yin Shi Shi; Maeding, D; Mainprize, J; Mawdsley, G; Yaffe, M J; Gordon, E E; Hamilton, W J

    2000-01-01

    Hybrid pixel detector arrays that convert X-rays directly into charge signals are under development at NOVA for application to digital mammography. This technology also has wide application possibilities in other fields of radiology or in industrial imaging, nondestructive evaluation (NDE) and nondestructive inspection (NDI). These detectors have potentially superior properties compared to either emulsion-based film-screen systems which has nonlinear response to X-rays, or phosphor-based detectors in which there is an intermediate step of X-ray to light photon conversion (Feig and Yaffe, Radiol. Clinics North America 33 (1995) 1205-1230). Potential advantages of direct conversion detectors are high quantum efficiencies (QE) of 98% or higher (for 0.3 mm thick CdZnTe detector with 20 keV X-rays), improved contrast, high sensitivity and low intrinsic noise. These factors are expected to contribute to high detective quantum efficiency (DQE). The prototype hybrid pixel detector developed has 50x50 mu m pixel size,...

  4. Passivation of CdZnTe surfaces by oxidation in low energy atomic oxygen

    International Nuclear Information System (INIS)

    Chen, H.; Chattopadhyay, K.; Chen, K.; Burger, A.; George, M.A.; Gregory, J.C.; Nag, P.K.; Weimer, J.J.; James, R.B.

    1999-01-01

    A method of surface passivation of Cd 1-x Zn x Te (CZT) x-ray and gamma ray detectors has been established by using microwave-assisted atomic oxygen bombardment. Detector performance is significantly enhanced due to the reduction of surface leakage current. CZT samples were exposed to an atomic oxygen environment at the University of Alabama in Huntsville close-quote s Thermal Atomic Oxygen Facility. This system generates neutral atomic oxygen species with kinetic energies of 0.1 - 0.2 eV. The surface chemical composition and its morphology modification due to atomic oxygen exposure were studied by x-ray photoelectron spectroscopy and atomic force microscopy and the results were correlated with current-voltage measurements and with room temperature spectral responses to 133 Ba and 241 Am radiation. A reduction of leakage current by about a factor of 2 is reported, together with significant improvement in the gamma-ray line resolution. copyright 1999 American Vacuum Society

  5. Cooled CdZnTe detectors for X-ray astronomy

    CERN Document Server

    Bale, G; Seller, P; Lowe, B

    1999-01-01

    Recent results combining thermoelectrically cooled CdZnTe detectors with a low-noise Pentafet preamplifier are presented. Cooling between -30 deg. C and -40 deg. C reduces the leakage current of the detectors and allows the use of a pulsed reset preamplifier and long shaping times, significantly improving the energy resolution. Mn K subalpha X-rays at 5.9 keV have been observed with a resolution of less than 280 eV FWHM and a peak to background of more than 200:1. The Fano factor of the material has been estimated at 0.11+-0.012 at -40 deg. C. The detector requirement for X-ray astronomy will be a photon-counting imaging spectrometer. A 16x16 element, bump bonded pixel detector is described and results from a prototype silicon array presented. The detector is constructed with ASIC amplifiers with a system noise of <25 electrons rms and should give an energy resolution comparable to the Pentafet results presented here.

  6. Control of electric field in CdZnTe radiation detectors by above-bandgap light

    International Nuclear Information System (INIS)

    Franc, J.; Dědič, V.; Rejhon, M.; Zázvorka, J.; Praus, P.; Touš, J.; Sellin, P. J.

    2015-01-01

    We have studied the possibility of above bandgap light induced depolarization of CdZnTe planar radiation detector operating under high flux of X-rays by Pockels effect measurements. In this contribution, we show a similar influence of X-rays at 80 kVp and LED with a wavelength of 910 nm irradiating the cathode on polarization of the detector due to an accumulation of a positive space charge of trapped photo-generated holes. We have observed the depolarization of the detector under simultaneous cathode-site illumination with excitation LED at 910 nm and depolarization above bandgap LED at 640 nm caused by trapping of drifting photo-generated electrons. Although the detector current is quite high during this depolarization, we have observed that it decreases relatively fast to its initial value after switching off the depolarizing light. In order to get detailed information about physical processes present during polarization and depolarization and, moreover, about associated deep levels, we have performed the Pockels effect infrared spectral scanning measurements of the detector without illumination and under illumination in polarized and optically depolarized states

  7. Control of electric field in CdZnTe radiation detectors by above-bandgap light

    Energy Technology Data Exchange (ETDEWEB)

    Franc, J.; Dědič, V.; Rejhon, M.; Zázvorka, J.; Praus, P. [Institute of Physics of Charles University, Prague (Czech Republic); Touš, J. [Crytur Ltd., Turnov (Czech Republic); Sellin, P. J. [Department of Physics, University of Surrey, Guildford (United Kingdom)

    2015-04-28

    We have studied the possibility of above bandgap light induced depolarization of CdZnTe planar radiation detector operating under high flux of X-rays by Pockels effect measurements. In this contribution, we show a similar influence of X-rays at 80 kVp and LED with a wavelength of 910 nm irradiating the cathode on polarization of the detector due to an accumulation of a positive space charge of trapped photo-generated holes. We have observed the depolarization of the detector under simultaneous cathode-site illumination with excitation LED at 910 nm and depolarization above bandgap LED at 640 nm caused by trapping of drifting photo-generated electrons. Although the detector current is quite high during this depolarization, we have observed that it decreases relatively fast to its initial value after switching off the depolarizing light. In order to get detailed information about physical processes present during polarization and depolarization and, moreover, about associated deep levels, we have performed the Pockels effect infrared spectral scanning measurements of the detector without illumination and under illumination in polarized and optically depolarized states.

  8. Analysis of Study Trend of Growth and Characterization of CdZnTe Single Crystal

    International Nuclear Information System (INIS)

    Lee, Kyu Hong; Ha, Jang Ho; Kim, Han Soo

    2011-05-01

    CdZnTe (CZT) alloys are very important semiconducting compounds due to their use in several strategic applications in medical, space, and security devices, especially, radiation detector. Specific problems of the bulk crystal growth are still to be solved. However, since industries require excellent bulk CZT crystals, a strong effort is being organized worldwide to optimize the growth process and obtain better material. This report presents the study trend of the bulk CZT crystal growth and characteristics. After the first section where the problems connected to the complicated phase diagram of CZT are presented, the second section describes the various general physical and chemical properties, together with the compensation problems of the CZT material. In the third section, various growth methods are described, paying attention to the defects generated in the different cases. Further, the annealing process which is an essential step for improving the crystal quality is described. In the last section, the general material characterization methods are presented, as a scientific approach for assessing the quality of the bulk crystal

  9. Polymorphic one-dimensional (N2H4)2ZnTe: soluble precursors for the formation of hexagonal or cubic zinc telluride.

    Science.gov (United States)

    Mitzi, David B

    2005-10-03

    Two hydrazine zinc(II) telluride polymorphs, (N2H4)2ZnTe, have been isolated, using ambient-temperature solution-based techniques, and the crystal structures determined: alpha-(N2H4)2ZnTe (1) [P21, a = 7.2157(4) Angstroms, b = 11.5439(6) Angstroms, c = 7.3909(4) Angstroms, beta = 101.296(1) degrees, Z = 4] and beta-(N2H4)2ZnTe (2) [Pn, a = 8.1301(5) Angstroms, b = 6.9580(5) Angstroms, c = 10.7380(7) Angstroms, beta = 91.703(1) degrees, Z = 4]. The zinc atoms in 1 and 2 are tetrahedrally bonded to two terminal hydrazine molecules and two bridging tellurium atoms, leading to the formation of extended one-dimensional (1-D) zinc telluride chains, with different chain conformations and packings distinguishing the two polymorphs. Thermal decomposition of (N2H4)2ZnTe first yields crystalline wurtzite (hexagonal) ZnTe at temperatures as low as 200 degrees C, followed by the more stable zinc blende (cubic) form at temperatures above 350 degrees C. The 1-D polymorphs are soluble in hydrazine and can be used as convenient precursors for the low-temperature solution processing of p-type ZnTe semiconducting films.

  10. Sb{sub 7}Te{sub 3}/ZnSb multilayer thin films for high thermal stability and long data retention phase-change memory

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Shiyu; Wu, Weihua [Functional Materials Research Laboratory, School of Materials Science & Engineering, Tongji University, Shanghai 201804 (China); Zhai, Jiwei, E-mail: apzhai@tongji.edu.cn [Functional Materials Research Laboratory, School of Materials Science & Engineering, Tongji University, Shanghai 201804 (China); Song, Sannian; Song, Zhitang [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Science, Shanghai 200050 (China)

    2017-04-15

    Highlights: • Sb{sub 7}Te{sub 3} (ST) provides a fast crystallization speed, low melting temperature. • The Sb{sub 7}Te{sub 3}/ZnSb films exhibits faster crystallization speed, high thermal stability. • The calculated temperature for 10-year data retention is about 127 {sup o}C. • The Sb{sub 7}Te{sub 3}/ZnSb multilayer configuration with low power consumption. - Abstract: Phase-change memory is regard as one of the most promising candidates for the next-generation non-volatile memory. In this work, we proposed a Sb{sub 7}Te{sub 3}/ZnSb multilayer thin films to improve the thermal stability of Sb-rich Sb{sub 3}Te{sub 7}. The sheet resistance ratio between amorphous and crystalline states reached up to 4 orders of magnitude. With regard to the thermal stability, the calculated temperature for 10-year data retention is about 127 °C. The threshold current and threshold voltage of a cell based on Sb{sub 7}Te{sub 3}/ZnSb are 6.9 μA and 1.9 V, respectively. The lower RESET power is presented in the PCM cells of Sb{sub 7}Te{sub 3}/ZnSb films, benefiting from its high resistivity.

  11. Variable dimensionality and framework found in a series of quaternary zinc selenites, A{sub 2}Zn{sub 3}(SeO{sub 3}){sub 4}·xH{sub 2}O (A = Na, Rb, and Cs; 0≤x≤1) and Cs{sub 2}Zn{sub 2}(SeO{sub 3}){sub 3}·2H{sub 2}O

    Energy Technology Data Exchange (ETDEWEB)

    Lü, Minfeng; Jo, Hongil; Oh, Seung-Jin; Ok, Kang Min, E-mail: kmok@cau.ac.kr

    2017-01-15

    Five new alkali metal zinc selenites, A{sub 2}Zn{sub 3}(SeO{sub 3}){sub 4}·xH{sub 2}O (A = Na, Rb, and Cs; 0≤x≤1) and Cs{sub 2}Zn{sub 2}(SeO{sub 3}){sub 3}·2H{sub 2}O have been synthesized by heating a mixture of ZnO, SeO{sub 2} and A{sub 2}CO{sub 3} (A = Na, Rb, and Cs), and characterized by X-ray diffraction (XRD) and spectroscopic analyses techniques. All of the reported materials revealed a rich structural chemistry with different frameworks and connection modes of Zn{sup 2+}. While Rb{sub 2}Zn{sub 3}(SeO{sub 3}){sub 4} and Cs{sub 2}Zn{sub 3}(SeO{sub 3}){sub 4}·H{sub 2}O revealed three-dimensional frameworks consisting of isolated ZnO{sub 4} tetrahedra and SeO{sub 3} polyhedra, Na{sub 2}Zn{sub 3}(SeO{sub 3}){sub 4}, Cs{sub 2}Zn{sub 3}(SeO{sub 3}){sub 4}, and Cs{sub 2}Zn{sub 2}(SeO{sub 3}){sub 3}·2H{sub 2}O contained two-dimensional [Zn{sub 3}(SeO{sub 3}){sub 4}]{sup 2-} layers. Specifically, whereas isolated ZnO{sub 4} tetrahedra and SeO{sub 3} polyhedra are arranged into two-dimensional [Zn{sub 3}(SeO{sub 3}){sub 4}]{sup 2-} layers in two cesium compounds, circular [Zn{sub 3}O{sub 10}]{sup 14-} chains and SeO{sub 3} linkers are formed in two-dimensional [Zn{sub 3}(SeO{sub 3}){sub 4}]{sup 2-} layers in Na{sub 2}Zn{sub 3}(SeO{sub 3}){sub 4}. Close structural examinations suggest that the size of alkali metal is significant in determining the framework geometry as well as connection modes of transition metal cations. - Graphical abstract: Variable dimensions and frameworks were found in a series of quaternary zinc selenites, A{sub 2}Zn{sub 3}(SeO{sub 3}){sub 4} (A = Na, Rb and Cs). - Highlights: • Five novel quaternary zinc selenites are synthesized. • All the selenites with different structures contain polarizable d{sup 10} and lone pair cations. • The size of alkali metal cations is significant in determining the framework geometry.

  12. IDeF-X ECLAIRs: A CMOS ASIC for the Readout of CdTe and CdZnTe Detectors for High Resolution Spectroscopy

    International Nuclear Information System (INIS)

    Gevin, O.; Baron, P.; Coppolani, X.; Delagnes, E.; Lugiez, F.; Daly, F.; Limousin, O.; Meuris, A.; Pinsard, F.; Renaud, D.

    2009-01-01

    The very last member of the IDeF-X ASIC family is presented: IDeF-X ECLAIRs is a 32-channel front end ASIC designed for the readout of Cadmium Telluride (CdTe) and Cadmium Zinc Telluride (CdZnTe) Detectors. Thanks to its noise performance (Equivalent Noise Charge floor of 33 e - rms) and to its radiation hardened design (Single Event Latch-up Linear Energy Transfer threshold of 56 MeV.cm 2 .mg -1 ), the chip is well suited for soft X-rays energy discrimination and high energy resolution, 'space proof', hard X-ray spectroscopy. We measured an energy low threshold of less than 4 keV with a 10 pF input capacitor and a minimal reachable sensitivity of the Equivalent Noise Charge (ENC) to input capacitance of less than 7e - /pF obtained with a 6 μs peak time. IDeF-X ECLAIRs will be used for the readout of 6400 CdTe Schottky mono-pixel detectors of the 2D coded mask imaging telescope ECLAIRs aboard the SVOM satellite. IDeF-X ECLAIRs (or IDeF-X V2) has also been designed for the readout of a pixelated CdTe detector in the miniature spectro-imager prototype Caliste 256 that is currently foreseen for the high energy detector module of the Simbol-X mission. (authors)

  13. IDeF-X ECLAIRs: A CMOS ASIC for the Readout of CdTe and CdZnTe Detectors for High Resolution Spectroscopy

    Science.gov (United States)

    Gevin, Olivier; Baron, Pascal; Coppolani, Xavier; Daly, FranÇois; Delagnes, Eric; Limousin, Olivier; Lugiez, Francis; Meuris, Aline; Pinsard, FrÉdÉric; Renaud, Diana

    2009-08-01

    The very last member of the IDeF-X ASIC family is presented: IDeF-X ECLAIRs is a 32-channel front end ASIC designed for the readout of Cadmium Telluride (CdTe) and Cadmium Zinc Telluride (CdZnTe) Detectors. Thanks to its noise performance (Equivalent Noise Charge floor of 33 e- rms) and to its radiation hardened design (Single Event Latchup Linear Energy Transfer threshold of 56 MeV.cm2.mg-1), the chip is well suited for soft X-rays energy discrimination and high energy resolution, ldquospace proof,rdquo hard X-ray spectroscopy. We measured an energy low threshold of less than 4 keV with a 10 pF input capacitor and a minimal reachable sensitivity of the Equivalent Noise Charge (ENC) to input capacitance of less than 7 e-/pF obtained with a 6 mus peak time. IDeF-X ECLAIRs will be used for the readout of 6400 CdTe Schottky monopixel detectors of the 2D coded mask imaging telescope ECLAIRs aboard the SVOM satellite. IDeF-X ECLAIRs (or IDeF-X V2) has also been designed for the readout of a pixelated CdTe detector in the miniature spectro-imager prototype Caliste 256 that is currently foreseen for the high energy detector module of the Simbol-X mission.

  14. Structural study of (CdS/ZnSe)/BeTe superlattices for λ=1.55 μm intersubband transition

    International Nuclear Information System (INIS)

    Li, B.S.; Akimoto, R.; Akita, K.; Hasama, H.

    2004-01-01

    A (CdS/ZnSe)/BeTe superlattice (SL), based on wide band gap II-VI compounds, with a large band offset of 3.1 eV was grown on a GaAs (001) substrate using molecular-beam epitaxy and an intersubband transition (ISB-T) of 0.78 eV (λ=1.58 μm) with a full width at half maximum (FWHM) of 96 meV observed. We studied structural properties using high-resolution x-ray diffraction combined with dynamic simulation and found through the strain state in samples that a ZnSe/BeTe interface having a quaternary interface layer (ZnTe) 0.45 (BeSe) 0.55 is preferentially formed despite the promotion of one molecular layer (ML) ZnTe interface formation. Be-Se bonds thus replace the Zn-Te bond in the transition region. For the CdS/ZnSe interface, an approximately 1 ML Zn 0.75 Cd 0.25 S ternary layer accompanied by ∼1 ML Zn 0.85 Cd 0.15 Se forms at the transition region due to Cd diffusion. X-ray (002) ω/2θ scan curves for (CdS/ZnSe)/BeTe SLs show sharp, intense satellite peaks exceeding ten orders, indicating high structure quality. We obtained excellent agreement between experimental diffraction patterns and the calculated curve via dynamic simulation for (CdS/ZnSe)/BeTe SLs. The good fits allows us to identify structure parameters in (CdS/ZnSe)/BeTe SLs, which are consistent with results of high-resolution transmission electron microscopy measurement. Based on dynamic simulated results, we obtained a structure of (CdS/ZnSe)/Be 1-x Mg x Te (x=1.2%) with an average lattice constant a SL matching the GaAs substrate. An ISB-T located at wavelength λ=1.55 μm with a narrow FWHM of 90 meV was thus realized at room temperature

  15. Contribution to the study of electronic structure of crystalline semiconductors (Si, Ge, GaAs, Gap, ZnTe, ZnSe

    Directory of Open Access Journals (Sweden)

    Bouhafs B.

    2012-06-01

    Full Text Available The band structure of semiconductors was described by several theorists since the Fifties. The main objective of the present paper is to do a comparative study between various families of semi-conductors IV (Si,Ge, III-V (GaAs, GaP and II-VI (ZnSe, ZnTe with both methods; tight Binding1 method and pseudo potential method2. This work enables us to understand as well as the mechanism of conduction process in these semiconductors and powers and limits of the above methods. The obtained results allow to conclude that both methods are in a good agreement to describe the morphology of band structures of the cited semiconductors. This encourages us to study in the future the electronic behaviour through the structure of bands for more complex systems such as the heterostructures.

  16. Electronic structure and transport in the low-temperature thermoelectric CsBi4Te6: Semiclassical transport equations

    DEFF Research Database (Denmark)

    Lykke, Lars; Iversen, Bo Brummerstedt; Madsen, Georg

    2006-01-01

    The band structure of the low-temperature thermoelectric material, CsBi4Te6, is calculated and analyzed using the semiclassic transport equations. It is shown that to obtain a quantitative agreement with measured transport properties, a band gap of 0.08 eV must be enforced. A gap in reasonable...... agreement with experiment was obtained using the generalized gradient functional of Engel and Vosko [E. Engel and S. H. Vosko, Phys. Rev. B 47, 13164 (1993)]. We found that the experimental p-type sample has a carrier concentration close to optimal. Furthermore, the conduction bands have a form equally well...

  17. Two new ternary chalcogenides Ba{sub 2}ZnQ{sub 3} (Q = Se, Te) with chains of ZnQ{sub 4} tetrahedra. Syntheses, crystal structure, and optical and electronic properties

    Energy Technology Data Exchange (ETDEWEB)

    Prakash, Jai; Beard, Jessica; Malliakas, Christos D.; Ibers, James A. [Northwestern Univ., Evanston, IL (United States). Dept. of Chemistry; Mesbah, Adel [Northwestern Univ., Evanston, IL (United States). Dept. of Chemistry; ICSM, UMR 5257 CEA/CNRS/UM2/ENSCM, Bagnols-sur-Ceze (France); Rocca, Dario; Lebegue, Sebastien [Univ. de Lorraine, Vandoeuvre-les-Nancy (France). Lab. de Cristallographie, Resonance Magnetique et Modelisations (CRM2, UMR CNRS 7036)

    2016-08-01

    Single crystals of Ba{sub 2}ZnQ{sub 3} (Q = Se, Te) were obtained by solid-state reactions at 1173 K. These isostructural compounds crystallize in the K{sub 2}AgI{sub 3} structure type. The Zn atoms in this structure are coordinated to four Q atoms (2 Q1, 1 Q2, 1 Q3) and these form a distorted tetrahedron around each Zn atom. Each ZnQ{sub 4} tetrahedron shares two corners with neighboring ZnQ{sub 4} tetrahedra resulting in the formation of infinite chains of [ZnQ{sub 4}{sup 4-}] units. The absorption spectrum of a single crystal of Ba{sub 2}ZnTe{sub 3} shows an absorption edge at 2.10(2) eV, consistent with the dark-red color of the crystals. From DFT calculations Ba{sub 2}ZnSe{sub 3} and Ba{sub 2}ZnTe{sub 3} are found to be semiconductors with electronic band gaps of 2.6 and 1.9 eV, respectively.

  18. Optical Properties of Ternary TeO2-B2O3-ZnO Glass System

    Energy Technology Data Exchange (ETDEWEB)

    Ayuni, J N; Halimah, M K; Talib, Z A; Sidek, H A A; Daud, W M; Zaidan, A W; Khamirul, A M, E-mail: nfarhanayuni@gmail.com, E-mail: halimah@science.upm.edu.my [Department of Physics, Faculty of Science, Universiti Putra Malaysia, 43400 UPM Serdang, Selangor (Malaysia)

    2011-02-15

    A series of ternary tellurite based glasses [(TeO2)70 (B203)30]100-x [ZnO]x glasses with different compositions of ZnO (x= 5 to 30 wt.% in steps of 5 wt.%) have been synthesized by melt quenching method. The role of ZnO to the glasses structure was studied by IR spectroscopy. FTIR spectra revealed broad, weak and strong absorption bands in the investigated range of wavenumber from 280-4000 cm-1 which associated with their corresponding bond modes of vibration and the glass structure. The indirect optical band gap and the direct optical band gap are in the range 2.08-3.12 and 1.54-2.36 eV, respectively. A decrease in the values of energy band gap Eg may come down to the reason that the non-bridging oxygen ion content increases with increasing ZnO content and shifting the band edge to lower energies. The optical band gap and Urbach energies were calculated from the absorption spectra measured between 190 and 900 nm at room temperature. The refractive index, n of the glasses change from 1.84-2.00 while the molar refractivities decrease from 13.06 to 12.00 with the increase of ZnO in mol%.

  19. Optical properties of ternary TeO2-B2O3-ZnO Glass system

    International Nuclear Information System (INIS)

    Nurfarhana Ayuni Joha; Halimah, M.K.; Talib, Z.A.; Sidek, H.A.A.; Daud, W.M.; Zaidan, A.W.; Khamirul, A.M.

    2009-01-01

    Full text: A series of ternary tellurite based glasses [ (TeO 2 ) 70 (B 2 0 3 ) 30 ] 100-x [ZnO] x glasses with different compositions of ZnO (x= 5 to 30 wt.% in steps of 5 wt.%) have been synthesized by melt quenching method. The role of ZnO to the glasses structure was studied by IR spectroscopy. FTIR spectra revealed broad, weak and strong absorption bands in the investigated range of wavenumber from 280 - 4000 cm -1 which associated with their corresponding bond modes of vibration and the glass structure. The indirect optical band gap and the direct optical band gap are in the range 2.08-3.12 and 1.54-2.36 eV, respectively. An increase in the values of energy band gap E g may come down to the reason that the non-bridging oxygen ion content decreases with increasing ZnO content and shifting the band edge to higher energies. The optical band gap and Urbach energies were calculated from the absorption spectra measured between 190 and 900 nm at room temperature. The refractive index, n of the glasses change from 1.84 - 2.00 while the molar refractivities decrease from 13.06 to 12.00 with the increase of ZnO in mol %. (author)

  20. Optical Properties of Ternary TeO2-B2O3-ZnO Glass System

    International Nuclear Information System (INIS)

    Ayuni, J N; Halimah, M K; Talib, Z A; Sidek, H A A; Daud, W M; Zaidan, A W; Khamirul, A M

    2011-01-01

    A series of ternary tellurite based glasses [(TeO2)70 (B203)30]100-x [ZnO]x glasses with different compositions of ZnO (x= 5 to 30 wt.% in steps of 5 wt.%) have been synthesized by melt quenching method. The role of ZnO to the glasses structure was studied by IR spectroscopy. FTIR spectra revealed broad, weak and strong absorption bands in the investigated range of wavenumber from 280-4000 cm-1 which associated with their corresponding bond modes of vibration and the glass structure. The indirect optical band gap and the direct optical band gap are in the range 2.08-3.12 and 1.54-2.36 eV, respectively. A decrease in the values of energy band gap Eg may come down to the reason that the non-bridging oxygen ion content increases with increasing ZnO content and shifting the band edge to lower energies. The optical band gap and Urbach energies were calculated from the absorption spectra measured between 190 and 900 nm at room temperature. The refractive index, n of the glasses change from 1.84-2.00 while the molar refractivities decrease from 13.06 to 12.00 with the increase of ZnO in mol%.

  1. Influence of CdTe sub-monolayer stressor on CdSe quantum dot self-assembling in ZnSe

    International Nuclear Information System (INIS)

    Sedova, I.V.; Lyublinskaya, O.G.; Sorokin, S.V.; Sitnikova, A.A.; Solnyshkov, D.D.; Rykhova, O.V.; Toropov, A.A.; Ivanov, S.V.

    2006-01-01

    This paper reports on the attempt to apply the stressor-controlled quantum dot (QD) fabrication technique to the conventional CdSe/ZnSe nanostructures. Super-strained CdTe fractional monolayer (Δa/a∝14% for CdTe/ZnSe) grown on top of the Te-stabilized ZnSe surface prior to deposition of the QD material (CdSe) has been used as a stressor which is expected to affect size, composition and density of CdSe QDs. The grown structures are studied by X-ray diffraction, transmission-electron microscopy, photoluminescence (PL) and PL excitation in comparison with conventional CdSe/ZnSe QDs obtained by a modified migration enhanced epitaxy technique. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  2. Ruggedization of CdZnTe detectors and detector assemblies for radiation detection applications

    Energy Technology Data Exchange (ETDEWEB)

    Lu, P.H., E-mail: pinghe.lu@redlen.com; Gomolchuk, P.; Chen, H.; Beitz, D.; Grosser, A.W.

    2015-06-01

    This paper described improvements in the ruggedization of CdZnTe detectors and detector assemblies for use in radiation detection applications. Research included experimenting with various conductive and underfill adhesive material systems suitable for CZT substrates. A detector design with encapsulation patterning was developed to protect detector surfaces and to control spacing between CZT anode and PCB carrier. Robustness of bare detectors was evaluated through temperature cycling and metallization shear testing. Attachment processes using well-chosen adhesives and PCB carrier materials were optimized to improve reliability of detector assemblies, resulted in Improved Attachment Detector Assembly. These detector assemblies were subjected to aggressive temperature cycling, and varying levels of drop/shock and vibration, in accordance with modified JEDEC, ANSI and FedEx testing standards, to assess their ruggedness. Further enhanced detector assembly ruggedization methods were investigated involving adhesive conformal coating, potting and dam filling on detector assemblies, which resulted in the Enhanced Ruggedization Detector Assembly. Large numbers of CZT detectors and detector assemblies with 5 mm and 15 mm thick, over 200 in total, were tested. Their performance was evaluated by exposure to various radioactive sources using comprehensive predefined detector specifications and testing protocols. Detector assemblies from improved attachment and enhanced ruggedization showed stable performances during the harsh environmental condition tests. In conclusion, significant progress has been made in improving the reliability and enhancing the ruggedness of CZT detector assemblies for radiation detection applications deployed in operational environments. - Highlights: • We developed ruggedization methods to enhance reliability of CZT detector assemblies. • Attachment of CZT radiation detectors was improved through comparative studies. • Bare detector metallization

  3. Effect of precursors stoichiometry on morphology, crystallinity and electrical properties of ZnTe epilayers grown on (100)GaAs by MOVPE

    International Nuclear Information System (INIS)

    Paiano, P.; Lovergine, N.; Mancini, A.M.; Prete, P.

    2005-01-01

    The effect of precursors vapour stoichiometry on the morphological, structural and electrical properties of nominally undoped ZnTe grown on (100)GaAs by metalorganic vapour phase epitaxy is reported. The epilayers were grown at 350 C using dimethylzinc (Me 2 Zn) and di-isopropyltelluride, varying their molar flow rate ratios (MFRs) between 0.17 and 3.10. Growth in nearly stoichiometric (MFR=1.03) conditions results in best surface morphology, while samples grown in Te-rich conditions (MFR>1.7) showed micron-size hollow defects (with surface densities up to ∝10 6 cm -2 ) elongated in one of the left angle 011 right angle in-plane directions. The defects are associated to a local structural disorder of the material, ascribed to the formation of a Ga 2 Te 3 extrinsic phase at the ZnTe/GaAs interface. Ohmic contacts to p -ZnTe epilayers were prepared by tungsten evaporation and annealing at 350 C. The RT hole concentration in the epilayers varies almost linearly with Me 2 Zn molar flow between 2 x 10 15 cm -3 and 5 x 10 16 cm -3 . Temperature-dependent Hall measurements performed on samples grown at MFR≤1.03 demonstrate that the material p-type conductivity originates from a single acceptor centre with an ionisation energy between 94.7 meV and 118 meV, its concentration being in the 10 16 cm -3 range and slowly increasing with Me 2 Zn flow. We ascribe this acceptor to a complex formed by a substitutional carbon atom on a Te site and a donor on a nearest neighbor site (C Te -D Zn ), the donor impurity being further identified as Ga diffusing from the substrate. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  4. Solvent extraction of Cs(I), Zn(II), Eu(III) and Am(III) by 2-heptyl-2-methyl-nonanoic acid (Ha) from nitrate solutions

    International Nuclear Information System (INIS)

    Ramadan, A.; Elnaggar, H.A.; Souka, N.; Abdelfattah, A.

    1994-01-01

    The present work is devoted to study the extraction behavior of caesium, zinc, europium and americium radioactive isotopes using a new extractant C H 3 (C H 2 ) 6 . C(C 7 H 1 5) (C H 3 ). COOH (Ha) dissolved in benzene from aqueous nitrate media of constant ionic strength (0.1 M) using HNO 3 -Na NO 3 mixtures. The effect temperature on the extraction of these elements was also investigated to evaluate the thermodynamic functions as well as the equilibrium constant of each reaction. The extraction mechanisms were postulated on the light of the available data and the extracted species were formulated in the proposed stoichiometric equation for the extraction of each element individually and these species were suggested to be Cs (A); Zn OH(A) and Zn(A) 2 ; Eu No 3 (A) 2 and Am(A) 3 and for Cs(I), Zn(II), Eu(III) and Am(III), respectively. The thermodynamic parameters show exothermic enthalpy for all the reactions and negative entropy values reflecting very good ordering extraction mechanisms. 10 figs, 1 tab

  5. Study and development of new CdTe and CdZnTe detection structures for X and γ imagery

    International Nuclear Information System (INIS)

    Rosaz, M.

    1997-01-01

    The aim of this study is to show the interest of applying cadmium telluride (CdTe) for X- and γ- ray imaging applications, with specific technological (via contact nature) and geometric (via Frisch grids) structures suited for each application. This work is divided into three different but complementary parts: the first part describes a simulation model which allows a better understanding of CdTe based γ- ray detectors. The new feature of this model compared to previous ones, is that it is able to take into account the electric field's non uniform spatial distribution inside the detector s. The results enable us to de-convolute the influence of material and contact parameters on the spectrometric performances (energy resolution and peak/valley ratio) of CdTe based detectors; the second part presents different technological structures deposited upon CdTe, (grown by two different methods, i.e Bridgman and High Pressure Bridgman). These structures were characterised in X- and γ- ray detection; theoretical models are developed which allow a certain insight into the detection properties of each couple (material + contact); the third part deals with new contact geometries which allow a screening effect of the bulk (analogous to the Frisch grid effect in gaseous detectors) resulting in improved energy resolution and peak/valley ratios; encouraging first results on prototypes are presented and discussed. This work has allowed a better understanding of physical behaviour of CdTe based detectors, coupled with advances in technological issues to upgrade the overall performances of these detectors for application in X- and γ- ray imaging. (author)

  6. Structural characterization of the high-temperature modification of the Cu_2ZnGeTe_4 quaternary semiconductor compound

    International Nuclear Information System (INIS)

    Nieves, L.; Marcano, G.; Power, C.; Rincon, C.; Delgado, G.E.; Lopez-Rivera, S.A.

    2016-01-01

    A combined study of the X-ray powder diffraction, differential thermal analysis, optical absorption, and Raman spectroscopy of the high-temperature modification of Cu_2ZnGeTe_4 quaternary semiconductor, obtained by fast quenching from 820 K to ice water temperature, has been done. It has been found that this phase crystallizes in a tetragonal kesterite-type structure. From the analysis of the absorption coefficient spectra, the band gap energy of this material at room temperature has been found to be 1.49 eV. An optical transition from defect acceptor states to the conduction band is also observed below the fundamental absorption edge. Three strongest Raman lines observed at 116, 119, and 139 cm"-"1 have been assigned to the A-symmetry modes. Also, lines at 81, 89, 97, and 263 cm"-"1 tentatively ascribed as B or E-symmetry modes have been detected from the spectrum. The presence in this high-temperature modification of ZnTe and Cu_2GeTe_3 secondary phases has been detected by both XRD and Raman spectroscopy. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  7. Gamma spectrometric characterization of short cooling time nuclear spent fuels using hemispheric CdZnTe detectors

    CERN Document Server

    Lebrun, A; Szabó, J L; Arenas-Carrasco, J; Arlt, R; Dubreuil, A; Esmailpur-Kazerouni, K

    2000-01-01

    After years of cooling, nuclear spent fuel gamma emissions are mainly due to caesium isotopes which are emitters at 605, 662 and 796-801 keV. Extensive work has been done on such fuels using various CdTe or CdZnTe probes. When fuels have to be measured after short cooling time (during NPP outage) the spectrum is much more complex due to the important contributions of niobium and zirconium in the 700 keV range. For the first time in a nuclear power plant, four spent fuels of the Kozloduy VVER reactor no 4 were measured during outage, 37 days after shutdown of the reactor. In such conditions, good resolution is of particular interest, so a 20 mm sup 3 hemispheric crystal was used with a resolution better than 7 keV at 662 keV. This paper presents the experimental device and analyzes the results which show that CdZnTe commercially available detectors enabled us to perform a semi-quantitative determination of the burn-up after a short cooling time. In addition, it is discussed how a burn-up evolution code (CESAR)...

  8. Development of a simplified simulation model for performance characterization of a pixellated CdZnTe multimodality imaging system

    Energy Technology Data Exchange (ETDEWEB)

    Guerra, P; Santos, A [Departamento de IngenierIa Electronica, Universidad Politecnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid (Spain); Darambara, D G [Joint Department of Physics, Royal Marsden NHS Foundation Trust and The Institute of Cancer Research, Fulham Road, London SW3 6JJ (United Kingdom)], E-mail: pguerra@die.um.es

    2008-02-21

    Current requirements of molecular imaging lead to the complete integration of complementary modalities in a single hybrid imaging system to correlate function and structure. Among the various existing detector technologies, which can be implemented to integrate nuclear modalities (PET and/or single-photon emission computed tomography with x-rays (CT) and most probably with MR, pixellated wide bandgap room temperature semiconductor detectors, such as CdZnTe and/or CdTe, are promising candidates. This paper deals with the development of a simplified simulation model for pixellated semiconductor radiation detectors, as a first step towards the performance characterization of a multimodality imaging system based on CdZnTe. In particular, this work presents a simple computational model, based on a 1D approximate solution of the Schockley-Ramo theorem, and its integration into the Geant4 application for tomographic emission (GATE) platform in order to perform accurately and, therefore, improve the simulations of pixellated detectors in different configurations with a simultaneous cathode and anode pixel readout. The model presented here is successfully validated against an existing detailed finite element simulator, the multi-geometry simulation code, with respect to the charge induced at the anode, taking into consideration interpixel charge sharing and crosstalk, and to the detector charge induction efficiency. As a final point, the model provides estimated energy spectra and time resolution for {sup 57}Co and {sup 18}F sources obtained with the GATE code after the incorporation of the proposed model.

  9. Physical reasons of emission transformation in infrared CdSeTe/ZnS quantum dots at bioconjugation

    Science.gov (United States)

    Torchynska, T. V.

    2015-04-01

    The core/shell CdSeTe/ZnS quantum dots (QDs) with emission at 780-800 nm (1.55-1.60 eV) have been studied by means of photoluminescence (PL) and Raman scattering methods in the nonconjugated state and after conjugation to different antibodies (Ab): (i) mouse monoclonal [8C9] human papilloma virus Ab, anti-HPV 16-E7 Ab, (ii) mouse monoclonal [C1P5] human papilloma virus HPV16 E6+HPV18 E6 Ab, and (iii) pseudo rabies virus (PRV) Ab. The transformations of PL and Raman scattering spectra of QDs, stimulated by conjugated antibodies, have been revealed and discussed. The energy band diagram of core/shell CdSeTe/ZnS QDs has been designed that helps to analyze the PL spectra and their transformations at the bioconjugation. It is shown that the core in CdSeTe/ZnS QDs is complex and including the type II quantum well. The last fact permits to explain the nature of infrared (IR) optical transitions (1.55-1.60 eV) and the high energy PL band (1.88-1.94 eV) in the nonconjugated and bioconjugated QDs. A set of physical reasons has been analyzed with the aim to explain the transformation of PL spectra in bioconjugated QDs. Finally it is shown that two factors are responsible for the PL spectrum transformation at bioconjugation to charged antibodies: (i) the change of energy band profile in QDs and (ii) the shift of QD energy levels in the strong quantum confinement case. The effect of PL spectrum transformation is useful for the study of QD bioconjugation to specific antibodies and can be a powerful technique for early medical diagnostics.

  10. Capacitance and conductance characterization of nano-ZnGa{sub 2}Te{sub 4}/n-Si diode

    Energy Technology Data Exchange (ETDEWEB)

    Fouad, S.S. [Thin Film Laboratory, Department of Physics, Faculty of Education, Ain Shams University, Roxy, Cairo (Egypt); Sakr, G.B. [Nano-Science Laboratory, Physics Department, Faculty of Education, Ain Shams University, Roxy, Cairo (Egypt); Yahia, I.S., E-mail: isyahia@gmail.com [Nano-Science Laboratory, Physics Department, Faculty of Education, Ain Shams University, Roxy, Cairo (Egypt); Semiconductor Laboratory, Physics Department, Faculty of Education, Ain Shams University, Roxy, Cairo (Egypt); Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha (Saudi Arabia); Abdel-Basset, D.M. [Nano-Science Laboratory, Physics Department, Faculty of Education, Ain Shams University, Roxy, Cairo (Egypt); Yakuphanoglu, F. [Department of Physics, Faculty of Science, Firat University, Elazig (Turkey)

    2014-01-01

    Graphical abstract: - Highlights: • XRD and DTA micrographs were used to study the structure of ZnGa{sub 2}Te{sub 4}. • C–V, G–V and R{sub s}–V of the diode characteristics have been analyzed for the first time. • Dielectric constant, dielectric loss, loss tangent and ac conductivity were determined. • The interfaces states were determined using conductance–voltage technique. • ZnGa{sub 2}Te{sub 4} is a good candidate for electronic device applications. - Abstract: Capacitance–voltage (C–V) and conductance–voltage (G–V) characteristics of p-ZnGa{sub 2}Te{sub 4}/n-Si HJD were studied over a wide frequency and temperature. Both the interface states density N{sub ss} and series resistance R{sub s} were strongly frequency and temperature dependent. The interface states density N{sub ss} is decreased with increasing frequency and increase with increasing temperature. The values of the built-in potential (V{sub bi}) were calculated and found to increase with increasing temperature and frequency. The values of capacitance C, conductance G, series resistance R{sub s}, corrected capacitance C{sub ADJ}, corrected conductance G{sub ADJ}, dielectric constant (ε′), dielectric loss (ε″), loss tangent (tan δ) and the AC conductivity (σ{sub ac}) are strongly dependent on the applied frequency, voltage and temperature. The obtained results show that the locations of N{sub ss} and R{sub s} have a significant effect on the electrical characteristics of the studied diode.

  11. Structure and properties of ZnO-B{sub 2}O{sub 3}-P{sub 2}O{sub 5}-TeO{sub 2} glasses

    Energy Technology Data Exchange (ETDEWEB)

    Mosner, Petr, E-mail: petr.mosner@upce.cz [Department of General and Inorganic Chemistry, University of Pardubice, Faculty of Chemical Technology, 53210 Pardubice (Czech Republic); Vosejpkova, Katerina; Koudelka, Ladislav [Department of General and Inorganic Chemistry, University of Pardubice, Faculty of Chemical Technology, 53210 Pardubice (Czech Republic); Montagne, Lionel; Revel, Bertrand [Unite de Catalyse et de Chimie du Solide - UCCS, Univ Lille Nord de France, F-59000, CNRS UMR 8181, USTL F-59655, ENSCL F-59652, Villeneuve d' Ascq (France)

    2010-11-01

    Zinc borophosphate glasses doped with TeO{sub 2} were studied in the compositional series (100 - x)[0.5ZnO-0.1B{sub 2}O{sub 3}-0.4P{sub 2}O{sub 5}]-xTeO{sub 2} in a broad concentration range of x = 0-80 mol% TeO{sub 2}. The structure of the glasses was studied by Raman and IR spectroscopy and by {sup 31}P and {sup 11}B MAS NMR spectroscopy. According to the Raman and IR spectra, TeO{sub 2} is incorporated in the structural network in the form of TeO{sub 3}, TeO{sub 3+1} and TeO{sub 4} structural units. The ratio of TeO{sub 4}/TeO{sub 3} increases with increasing TeO{sub 2} content in the glasses. The incorporation of TeO{sub x} units into the glass network is associated with the depolymerisation of phosphate chains, as revealed by Raman spectroscopy. The incorporation of TeO{sub 2} modifies also the coordination of boron atoms, where B(OP){sub 4} structural units are gradually replaced by B(OP){sub 4-n}(OTe){sub n} units. The addition of TeO{sub 2} to the parent zinc borophosphate glass results in a decrease of glass transition temperature associated with the replacement of stronger P-O and B-O bonds by weaker Te-O bonds. Chemical durability of glasses reveals a minimum at the glass containing 10 mol% TeO{sub 2}, but with further additions of TeO{sub 2} it improves and the glasses with a high TeO{sub 2} content reveal better durability than the parent zinc borophosphate glass.

  12. Structural characterization of ZnTe grown by atomic-layer-deposition regime on GaAs and GaSb (100) oriented substrates

    Energy Technology Data Exchange (ETDEWEB)

    Castillo-Ojeda, Roberto Saúl [Universidad Politécnica de Pachuca (Mexico); Díaz-Reyes, Joel; Peralta-Clara, María de la Cruz; Veloz-Rendón, Julieta Salomé, E-mail: joel_diaz_reyes@hotmail.com [Centro de Investigación en Biotecnología Aplicada, Instituto Politécnico Nacional, Tlaxcala, (Mexico); Galván-Arellano, Miguel [Centro de Investigación y de Estudios Avanzados, Instituto Politécnico Nacional (Mexico); Anda-Salazar, Francisco de [Instituto de Investigación en Comunicación Óptica, Universidad Autónoma de San Luis Potosí (Mexico); Contreras-Rascon, Jorge Indalecio [Departamento de Física, Universidad de Sonora (Mexico)

    2017-10-15

    This work presents the characterization of ZnTe nano layers grown on GaAs and GaSb (100) substrates by the Atomic Layer Deposition (ALD) regime. Under certain conditions, the alternating exposition of a substrate surface to the element vapours makes possible the growth of atomic layers in a reactor where the atmosphere is high-purity hydrogen. ZnTe was grown simultaneously on GaAs and GaSb at the same run, allowing, a comparison between the effects produced by the superficial processes due to the different used substrates, thereby eliminating possible unintended changes of growth parameters. Nano layers on GaSb maintained their shiny appearance even at temperatures near 420°C. It was found that for exposure times below 2.5 s there was not growth on GaAs, while for GaSb the shortest time was 1.5 s at 385°C. By HRXRD the peak corresponding to (004) diffraction plane of ZnTe was identified and investigated, the FWHM resulted very wide (600-800 arcsec) indicating a highly distorted lattice mainly due to mosaicity. Raman scattering shows the peak corresponding to LO-ZnTe, which is weak and slightly shifted in comparison with the reported for the bulk ZnTe at 210 cm{sup -1}. Additionally, the measurements suggest that the crystalline quality have a dependence with the growth temperature. (author)

  13. Microscopic Structure of DX Centers in Cd0.8Zn0.2Te:Cl

    International Nuclear Information System (INIS)

    Shan, Y.Y.; Lynn, K.G.; Szeles, C.; Asoka-Kumar, P.; Thio, T.; Bennett, J.W.; Beling, C.B.; Fung, S.; Becla, P.

    1997-01-01

    Photoexcitation of chlorine DX centers induces a transition of the Cl atoms to the shallow-donor state and persistent photoconductivity at low temperature in Cd 0.8 Zn 0.2 Te:Cl. The relaxation of the substitutional Cl atoms to the DX state at 140K is coincident with a decrease of the positron line-shape parameter and an increase of annihilation with high-momentum core electrons. The results indicate positron trapping and annihilation at DX centers and at chlorine A centers. The data support the bond breaking model of the DX centers and the outward relaxation of the Cl and Cd(Zn) atoms along the [111] direction. The thermal barrier for the shallow-deep transition was found to be 0.44eV. copyright 1997 The American Physical Society

  14. Optical properties and crystallization kinetics of (TeO{sub 2})(ZnO)(TiO{sub 2}) glasses

    Energy Technology Data Exchange (ETDEWEB)

    Kabalci, Idris [Department of Physics Education, Education Faculty, Harran University, Sanliurfa (Turkey); Koerpe, Nese Oeztuerk [Department of Materials Science, Eskisehir, Osmangazi University, Eskisehir (Turkey); Duran, Tugba; Oezdemir, Mustafa [Department of Physics, Science and Arts Faculty, Marmara University, Istanbul (Turkey)

    2011-09-15

    Ternary tellurite based glasses in the (TeO{sub 2})(ZnO)(TiO{sub 2}) system were prepared and its optical properties and crystallization kinetics investigated by using UV-VIS spectrophotometer and differential thermal analyzer (DTA). All the glasses were transparent from visible to near infrared region for different ZnO glass compositions (x=0.05, 0.10, 0.20, and 0.30 mol). In the experiment, optical band gap and Urbach energies were estimated from the optical absorption spectra between 400 and 800 nm wavelength region. The observed results confirm that the addition of ZnO glass composition from 0.05 to 0.30 mol increases the optical band gap energy from 2.94 to 3.0 eV. In addition, glass transition (T{sub g}), crystallization (T{sub p}) and melting temperature (T{sub m}) were determined by using the DTA plots. Finally, DTA results obtained with a heating rate of 20 C/min show that the peak crystallization temperature increases from 463 to 533 C as the ZnO content increases from 0.05 to 0.30 mol (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  15. Self-assembled formation and transformation of In/CdZnTe(110) nano-rings into camel-humps

    International Nuclear Information System (INIS)

    Cohen-Taguri, G.; Ruzin, A.; Goldfarb, I.

    2012-01-01

    We used in situ scanning tunneling microscopy to monitor in real time the formation of nano-rings at the molecular beam epitaxially grown In/CdZnTe(110) surface, and Auger electron spectroscopy to explore the corresponding compositional changes. In-diffusion of In and segregation of Cd to the surface in course of annealing lead to a formation of elliptically distorted nano-rings, elongated along the fast [110] diffusion direction. Exacerbated diffusion anisotropy in the liquid state, at temperatures above the melting point of In, further distorts the nano-rings into a camel-hump shape.

  16. Growth of Cd0.96Zn0.04Te single crystals by vapor phase gas transport method

    Directory of Open Access Journals (Sweden)

    S. H. Tabatabai Yazdi

    2006-03-01

    Full Text Available   Cd0.96Zn0.04Te crystals were grown using vapor phase gas transport method (VPGT. The results show that dendritic crystals with grain size up to 3.5 mm can be grown with this technique. X-ray diffraction and Laue back-reflection patterns show that dendritic crystals are single-phase, whose single crystal grains are randomly oriented with respect to the gas-transport axis. Electrical measurements, carried out using Van der Pauw method, show that the as-grown crystals have resistivity of about 104 Ω cm and n-type conductivity.

  17. Investigating the electronic properties of multi-junction ZnS/CdS/CdTe graded bandgap solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Olusola, O.I., E-mail: olajideibk@yahoo.com [Electronic Materials and Sensors Group, Materials and Engineering Research Institute, Sheffield Hallam University, Sheffield S1 1WB (United Kingdom); Department of Physics, School of Science, The Federal University of Technology, Akure (FUTA), P.M.B. 704 (Nigeria); Madugu, M.L.; Dharmadasa, I.M. [Electronic Materials and Sensors Group, Materials and Engineering Research Institute, Sheffield Hallam University, Sheffield S1 1WB (United Kingdom)

    2017-04-15

    The fabrication of multi-junction graded bandgap solar cells have been successfully implemented by electroplating three binary compound semiconductors from II-VI family. The three semiconductor materials grown by electroplating techniques are ZnS, CdS and CdTe thin films. The electrical conductivity type and energy bandgap of each of the three semiconductors were determined using photoelectrochemical (PEC) cell measurement and UV–Vis spectrophotometry techniques respectively. The PEC cell results show that all the three semiconductor materials have n-type electrical conductivity. These two material characterisation techniques were considered in this paper in order to establish the relevant energy band diagram for device results, analysis and interpretation. Solar cells with the device structure glass/FTO/n-ZnS/n-CdS/n-CdTe/Au were then fabricated and characterised using current-voltage (I-V) and capacitance-voltage (C-V) techniques. From the I-V characteristics measurement, the fabricated device structures yielded an open circuit voltage (V{sub oc}) of 670 mV, short circuit current density (J{sub sc}) of 41.5 mA cm{sup −2} and fill-factor (FF) of 0.46 resulting in ∼12.8% efficiency when measured at room temperature under AM1.5 illumination conditions. The device structure showed an excellent rectification factor (RF) of 10{sup 4.3} and ideality factor (n) of 1.88. The results obtained from the C-V measurement also showed that the device structures have a moderate doping level of 5.2 × 10{sup 15} cm{sup −3}. - Highlights: • Electroplating of n-ZnS, n-CdS and n-CdTe binary compound semiconductors. • Fabrication of Schottky barrier solar cells from glass/FTO/n-ZnS/n-CdS/n-CdTe/Au. • Development of multi-junction graded bandgap solar cells using n-n-n structures.

  18. Compact CdZnTe-Based Gamma Camera For Prostate Cancer Imaging

    International Nuclear Information System (INIS)

    Cui, Y.; Lall, T.; Tsui, B.; Yu, J.; Mahler, G.; Bolotnikov, A.; Vaska, P.; DeGeronimo, G.; O'Connor, P.; Meinken, G.; Joyal, J.; Barrett, J.; Camarda, G.; Hossain, A.; Kim, K.H.; Yang, G.; Pomper, M.; Cho, S.; Weisman, K.; Seo, Y.; Babich, J.; LaFrance, N.; James, R.B.

    2011-01-01

    In this paper, we discuss the design of a compact gamma camera for high-resolution prostate cancer imaging using Cadmium Zinc Telluride (CdZnTe or CZT) radiation detectors. Prostate cancer is a common disease in men. Nowadays, a blood test measuring the level of prostate specific antigen (PSA) is widely used for screening for the disease in males over 50, followed by (ultrasound) imaging-guided biopsy. However, PSA tests have a high false-positive rate and ultrasound-guided biopsy has a high likelihood of missing small cancerous tissues. Commercial methods of nuclear medical imaging, e.g. PET and SPECT, can functionally image the organs, and potentially find cancer tissues at early stages, but their applications in diagnosing prostate cancer has been limited by the smallness of the prostate gland and the long working distance between the organ and the detectors comprising these imaging systems. CZT is a semiconductor material with wide band-gap and relatively high electron mobility, and thus can operate at room temperature without additional cooling. CZT detectors are photon-electron direct-conversion devices, thus offering high energy-resolution in detecting gamma rays, enabling energy-resolved imaging, and reducing the background of Compton-scattering events. In addition, CZT material has high stopping power for gamma rays; for medical imaging, a few-mm-thick CZT material provides adequate detection efficiency for many SPECT radiotracers. Because of these advantages, CZT detectors are becoming popular for several SPECT medical-imaging applications. Most recently, we designed a compact gamma camera using CZT detectors coupled to an application-specific-integrated-circuit (ASIC). This camera functions as a trans-rectal probe to image the prostate gland from a distance of only 1-5 cm, thus offering higher detection efficiency and higher spatial resolution. Hence, it potentially can detect prostate cancers at their early stages. The performance tests of this camera

  19. X-ray diffraction study on pressure-induced phase transformations and the equation of state of ZnGa{sub 2}Te{sub 4}

    Energy Technology Data Exchange (ETDEWEB)

    Errandonea, D., E-mail: daniel.errandonea@uv.es [Departamento de Física Aplicada-ICMUV, MALTA Consolider Team, Universidad de Valencia, Edificio de Investigación, C/Dr. Moliner 50, Burjassot, 46100 Valencia (Spain); Kumar, R. S. [High Pressure Science and Engineering Center, Department of Physics and Astronomy, University of Nevada Las Vegas, 4505 Maryland Parkway, Las Vegas, Nevada 89154-4002 (United States); Gomis, O. [Centro de Tecnologías Físicas: Acústica, Materiales y Astrofísica, MALTA Consolider Team, Universitat Politècnica de València, 46022 València (Spain); Manjón, F. J. [Instituto de Diseño para la Fabricación y Producción Automatizada, MALTA Consolider Team, Universitat Politècnica de València, 46022 València (Spain); Ursaki, V. V.; Tiginyanu, I. M. [Institute of Applied Physics, Academy of Sciences of Moldova, 2028 Chisinau (Moldova, Republic of)

    2013-12-21

    We report on high-pressure x-ray diffraction measurements up to 19.8 GPa in zinc digallium telluride (ZnGa{sub 2}Te{sub 4}) at room temperature. An irreversible structural phase transition takes place at pressures above 12.1 GPa and upon decompression a third polymorph of ZnGa{sub 2}Te{sub 4} was recovered as a metastable phase at pressures below 2.9 GPa. Rietveld refinements were carried out for the three detected polymorphs, being their possible crystal structures reported. The axial compressibilities for the low-pressure phase of ZnGa{sub 2}Te{sub 4} have been determined as well as the equation of state of the low- and high-pressure phases. The reported results are compared with those available in the literature for related compounds. Pressure-induced coordination changes and transition mechanisms are also discussed.

  20. Synthesis of CdTe/CdS/ZnS quantum dots and their application in imaging of hepatocellular carcinoma cells and immunoassay for alpha fetoprotein

    Energy Technology Data Exchange (ETDEWEB)

    Tian Jianniao; Liu Rongjun; Zhao Yanchun; Peng Yan; Hong Xue; Zhao Shulin [Key Laboratory for the Chemistry and Molecular Engineering of Medicinal Resources (Ministry of Education of China), College of Chemistry and Chemical Engineering of Guangxi Normal University, Guilin 541004 (China); Xu Qing, E-mail: tianjn58@yahoo.com.cn [Pharmacology Department of Guilin Medical College, Guilin 541004 (China)

    2010-07-30

    We report the imaging of hepatocellular carcinoma cells and the immunoassay for alpha fetoprotein (AFP) using CdTe/CdS/ZnS core-shell-shell QDs. Stable and high PLQY (20%-48%) CdTe/CdS/ZnS core-shell-shell QDs were synthesized by a stepwise process. Bioconjugation of the core-shell-shell QDs with streptavidin (SA) was successfully applied in immunofluorescent imaging of the human hepatocellular carcinoma (HCC) cell line HepG2.2.15. Furthermore, the thioglycolic acid (TGA)-capped CdTe/CdS/ZnS core-shell-shell QDs fluorescence lifetime is longer than fluorescein, so it was first engaged to conjugate with antigen for the determination of protein (AFP) by fluorescence polarization immunoassay.

  1. Synthesis of CdTe/CdS/ZnS quantum dots and their application in imaging of hepatocellular carcinoma cells and immunoassay for alpha fetoprotein

    International Nuclear Information System (INIS)

    Tian Jianniao; Liu Rongjun; Zhao Yanchun; Peng Yan; Hong Xue; Zhao Shulin; Xu Qing

    2010-01-01

    We report the imaging of hepatocellular carcinoma cells and the immunoassay for alpha fetoprotein (AFP) using CdTe/CdS/ZnS core-shell-shell QDs. Stable and high PLQY (20%-48%) CdTe/CdS/ZnS core-shell-shell QDs were synthesized by a stepwise process. Bioconjugation of the core-shell-shell QDs with streptavidin (SA) was successfully applied in immunofluorescent imaging of the human hepatocellular carcinoma (HCC) cell line HepG2.2.15. Furthermore, the thioglycolic acid (TGA)-capped CdTe/CdS/ZnS core-shell-shell QDs fluorescence lifetime is longer than fluorescein, so it was first engaged to conjugate with antigen for the determination of protein (AFP) by fluorescence polarization immunoassay.

  2. Effect of the external electric field on the kinetics of recombination of photoexcited carriers in a ZnSe/BeTe type II heterostructure

    Science.gov (United States)

    Filatov, E. V.; Maksimov, A. A.; Tartakovskii, I. I.; Yakovlev, D. R.; Waag, A.

    2012-02-01

    The kinetics of the radiative recombination of photoexcited electrons and holes for a spatially direct transition in a ZnSe/BeTe type II heterostructure in an external electric field has been analyzed. A strong decrease (more than two orders of magnitude) in the photoluminescence intensity, as well as a decrease in the duration of the relaxation of the direct transition, is observed when the electric field is applied. The energy levels and wavefunctions of electrons and holes in the ZnSe/BeTe heterostructure subjected to the electric field have been numerically calculated. It has been shown that the observed decrease in the photoluminescence intensity and duration of the relaxation of the direct transition is due to both an increase in the radiative recombination time and an increase in the rate of escape of photoexcited holes from the above-barrier level in the ZnSe layer to the BeTe layer.

  3. Atomistic tight-binding theory of excitonic splitting energies in CdX(X = Se, S and Te)/ZnS core/shell nanocrystals

    Science.gov (United States)

    Sukkabot, Worasak; Pinsook, Udomsilp

    2017-01-01

    Using the atomistic tight-binding theory (TB) and a configuration interaction description (CI), we numerically compute the excitonic splitting of CdX(X = Se, S and Te)/ZnS core/shell nanocrystals with the objective to explain how types of the core materials and growth shell thickness can provide the detailed manipulation of the dark-dark (DD), dark-bright (DB) and bright-bright (BB) excitonic splitting, beneficial for the active application of quantum information. To analyze the splitting of the excitonic states, the optical band gaps, ground-state wave function overlaps and atomistic electron-hole interactions tend to be numerically demonstrated. Based on the atomistic computations, the single-particle and excitonic gaps are mainly reduced with the increasing ZnS shell thickness owing to the quantum confinement. In the range of the higher to lower energies, the order of the single-particle gaps is CdSe/ZnS, CdS/ZnS and CdTe/ZnS core/shell nanocrystals, while one of the excitonic gaps is CdS/ZnS, CdSe/ZnS and CdTe/ZnS core/shell nanocrystals because of the atomistic electron-hole interaction. The strongest electron-hole interactions are mainly observed in CdSe/ZnS core/shell nanocrystals. In addition, the computational results underline that the energies of the dark-dark (DD), dark-bright (DB) and bright-bright (BB) excitonic splitting are generally reduced with the increasing ZnS growth shell thickness as described by the trend of the electron-hole exchange interaction. The high-to-low splitting of the excitonic states is demonstrated in CdSe/ZnS, CdTe/ZnS and CdS/ZnS core/shell nanocrystals because of the fashion in the electron-hole exchange interaction and overlaps of the electron-hole wave functions. As the resulting calculations, it is expected that CdS/ZnS core/shell nanocrystals are the best candidates to be the source of entangled photons. Finally, the comprehensive information on the excitonic splitting can enable the use of suitable core

  4. Design of low noise front-end ASIC and DAQ system for CdZnTe detector

    International Nuclear Information System (INIS)

    Luo Jie; Deng Zhi; Liu Yinong

    2012-01-01

    A low noise front-end ASIC has been designed for CdZnTe detector. This chip contains 16 channels and each channel consists of a dual-stage charge sensitive preamplifier, 4th order semi-Gaussian shaper, leakage current compensation (LCC) circuit, discriminator and output buffer. This chip has been fabricated in Chartered 0.35 μm CMOS process, the preliminary results show that it works well. The total channel charge gain can be adjusted from 100 mV/fC to 400 mV/fC and the peaking time can be adjusted from 1 μs to 4 μs. The minimum measured ENC at zero input capacitance is 70 e and minimum noise slope is 20 e/pF. The peak detector and derandomizer (PDD) ASIC developed by BNL and an associated USB DAQ board are also introduced in this paper. Two front-end ASICs can be connected to the PDD ASIC on the USB DAQ board and compose a 32 channels DAQ system for CdZnTe detector. (authors)

  5. X-Ray Beam Studies of Charge Sharing in Small Pixel, Spectroscopic, CdZnTe Detectors

    Science.gov (United States)

    Allwork, Christopher; Kitou, Dimitris; Chaudhuri, Sandeep; Sellin, Paul J.; Seller, Paul; Veale, Matthew C.; Tartoni, Nicola; Veeramani, Perumal

    2012-08-01

    Recent advances in the growth of CdZnTe material have allowed the development of small pixel, spectroscopic, X-ray imaging detectors. These detectors have applications in a diverse range of fields such as medical, security and industrial sectors. As the size of the pixels decreases relative to the detector thickness, the probability that charge is shared between multiple pixels increases due to the non zero width of the charge clouds drifting through the detector. These charge sharing events will result in a degradation of the spectroscopic performance of detectors and must be considered when analyzing the detector response. In this paper charge sharing and charge loss in a 250 μm pitch CdZnTe pixel detector has been investigated using a mono-chromatic X-ray beam at the Diamond Light Source, U.K. Using a 20 μm beam diameter the detector response has been mapped for X-ray energies both above (40 keV) and below (26 keV) the material K-shell absorption energies to study charge sharing and the role of fluorescence X-rays in these events.

  6. Performance of CdZnTe strip detectors as sub-millimeter resolution imaging gamma radiation spectrometers

    International Nuclear Information System (INIS)

    Mayer, M.; Boykin, D.V.; Drake, A.

    1996-01-01

    We report γ-ray detection performance measurements and computer simulations of a sub-millimeter pitch CdZnTe strip detector. The detector is a prototype for γ-ray astronomy measurements in the range of 20-200 keV. The prototype is a 1.5 mm thick, 64 x 64 orthogonal stripe CdZnTe detector of 0.375 mm pitch in both dimensions, with approximately one square inch of sensitive area. Using discrete laboratory electronics to process signals from 8 x 8 stripe region of the prototype we measured good spectroscopic uniformity and sub-pitch (∼ 0.2 mm) spatial resolution in both x and y dimensions. We present below measurements of the spatial uniformity, relative timing and pulse height of the anode and cathode signals, and the photon detection efficiency. We also present a technique for determining the location of the event in the third dimension (depth). We simulated the photon interactions and signal generation in the strip detector and the test electronics and we compare these results with the data. The data indicate that cathode signal - as well as the anode signal - arises more strongly from the conduction electrons rather than the holes

  7. Theoretical evaluation of the Doppler broadening contribution to the angular resolution in CdZnTe Compton scattering detector

    International Nuclear Information System (INIS)

    Diaz Garcia, A.; Cabal Rodriguez, A.E.; Rubio Rodriguez, J. A.; Salicio Diez, J.; Perez Morales, J.M.; Vela Morales, O.; Willmott Zappacosta, C.; Van Espen, P.

    2011-01-01

    Electronically collimated Compton Cameras have been tested in Single Photon Emission Tomography (SPECT) systems instead of mechanically collimated gamma detectors in order to improve their limited sensitivity. One of the main factors that contribute to the worsening of the angular resolution and thus to the deterioration of the system spatial resolution is Doppler broadening. Double differential Klein-Nishina equation is used to consider the random movement of electron inside the crystal. It is important to perform this analysis for each particular material because is difficult to infer one simple Doppler broadening dependency of the atomic number Z. In high Z materials the internal electrons are strongly linked to the nucleus and therefore there can be found high momentums, but they represent just a small portion of the electrons that suffers Compton scattering. This work estimates the influence of the Doppler broadening in CdZnTe semiconductor for different incoming photon energies. For this means there are analyzed main Compton broadening processes in semiconductor Cd 0,8 Zn 0,2 Te with density ρ=5,85g/cm 3 . (Author)

  8. Discrimination of alpha particles in CdZnTe detectors with coplanar grid for the COBRA experiment

    Energy Technology Data Exchange (ETDEWEB)

    Rebber, Henning [Universitaet Hamburg, Institut fuer Experimentalphysik, Luruper Chaussee 149, 22761 Hamburg (Germany); Collaboration: COBRA-Collaboration

    2016-07-01

    The aim of the COBRA experiment is the search for neutrinoless double beta decay using CdZnTe semiconductor detectors. A background rate in the order of 10{sup -3} counts per keV, kg and year is intended in order to be sensitive to a half-life larger than 10{sup 26} years. Measurements from a demonstrator setup and Monte Carlo simulations indicate that a large background component is due to alpha particles. These generate charge clouds of only few μm in diameter in the detector, leading to characteristic pulse features. Parameter-based cut criteria were developed to discriminate alpha events by means of their pulse shapes. The cuts were tested on data from alpha and beta irradiation of a (1 x 1 x 1) cm{sup 3} CdZnTe detector with coplanar grid. The pulse shapes of all event signals were read out by FADCs with a sampling rate of 100 MHz. The signals were reproduced by a detector simulation which hence was used to study the cuts for energies up to 3 MeV and different detector regions.

  9. Effect of chemical etching on the surface roughness of CdZnTe and CdMnTe gamma radiation detectors

    International Nuclear Information System (INIS)

    Hossain, A.; Babalola, S.; Bolotnikov, A.E.; Camarda, G.S.; Cui, Y.; Yang, G.; Guo, M.; Kochanowska, D.; Mycielski, A.; Burger, A.; James, R.B.

    2008-01-01

    Generally, mechanical polishing is performed to diminish the cutting damage followed by chemical etching to remove the remaining damage on crystal surfaces. In this paper, we detail the findings from our study of the effects of various chemical treatments on the roughness of crystal surfaces. We prepared several CdZnTe (CZT) and CdMnTe (CMT) crystals by mechanical polishing with 5 (micro)m and/or lower grits of Al 2 O 3 abrasive papers including final polishing with 0.05-(micro)m particle size alumina powder and then etched them for different periods with a 2%, 5% Bromine-Methanol (B-M) solution, and also with an E-solution (HNO 3 :H 2 O:Cr 2 O 7 ). The material removal rate (etching rate) from the crystals was found to be 10 (micro)m, 30 (micro)m, and 15 (micro)m per minute, respectively. The roughness of the resulting surfaces was determined by the Atomic Force Microscopy (AFM) to identify the most efficient surface processing method by combining mechanical and chemical polishing

  10. Effects of analytes on the fluorescence properties of CdTe@ZnS quantum dots decorated with cobalt tetraamino-phthalocyanine

    Energy Technology Data Exchange (ETDEWEB)

    Adegoke, Oluwasesan; Nyokong, Tebello, E-mail: t.nyokong@ru.ac.za

    2014-02-15

    In this work, we have carried out an investigation on the effects of different biologically active analytes on the fluorescence response of glutathione-capped CdTe@ZnS quantum dots (QDs)-colbalt tetraamino-phthalocyanine nanoconjugate system. Firstly, fluorescence quenching occurred. Experimental results showed that some analytes either “turned on”, others further quenched or showed no effect on the fluorescence emission of the nanoprobe. -- Highlights: • A conjugate between CdTe@ZnS quantum dots and cobalt tetraamino-phthalocyanine is formed. • The fluorescence of quantum dots is quenched on coordination. • The fluorescence is enhanced by analytes such as cystamine, hydroxyl radical, glutathione, and perchlorate.

  11. Characterization of etch pit formation via the Everson-etching method on CdZnTe crystal surfaces from the bulk to the nanoscale

    International Nuclear Information System (INIS)

    Teague, Lucile C.; Duff, Martine C.; Cadieux, James R.; Soundararajan, Raji; Shick, Charles R.; Lynn, Kelvin G.

    2011-01-01

    A combination of atomic force microscopy, optical microscopy, and mass spectrometry was employed to study CdZnTe crystal surface and used etchant solution following exposure of the CdZnTe crystal to the Everson etch solution. We discuss the results of these studies in relationship to the initial surface preparation methods, the performance of the crystals as radiation spectrometers, the observed etch pit densities, and the chemical mechanism of surface etching. Our results show that the surface features that are exposed to etchants result from interactions with the chemical components of the etchants as well as pre-existing mechanical polishing.

  12. Bandgap engineered reverse type-I CdTe/InP/ZnS core-shell nanocrystals for the near-infrared.

    Science.gov (United States)

    Kim, Sunghoon; Shim, Wooyoung; Seo, Heonjin; Hyun Bae, Je; Sung, Jaeyoung; Choi, Seung Hong; Moon, Woo Kyung; Lee, Gwang; Lee, Bunyeoul; Kim, Sang-Wook

    2009-03-14

    New quantum dots were fabricated with a core/shell/shell structure consisting of CdTe core/InP shell/ZnS shell of which the InP shell causes a red-shift to the NIR region and the ZnS shell imparts photo-stability; toxicity tests on mammalian cells and NIR imaging of a mouse highlight their potential applications in biomedical imaging.

  13. Band engineering in core/shell ZnTe/CdSe for photovoltage and efficiency enhancement in exciplex quantum dot sensitized solar cells.

    Science.gov (United States)

    Jiao, Shuang; Shen, Qing; Mora-Seró, Iván; Wang, Jin; Pan, Zhenxiao; Zhao, Ke; Kuga, Yuki; Zhong, Xinhua; Bisquert, Juan

    2015-01-27

    Even though previously reported CdTe/CdSe type-II core/shell QD sensitizers possess intrinsic superior optoelectronic properties (such as wide absorption range, fast charge separation, and slow charge recombination) in serving as light absorbers, the efficiency of the resultant solar cell is still limited by the relatively low photovoltage. To further enhance photovoltage and cell efficiency accordingly, ZnTe/CdSe type-II core/shell QDs with much larger conduction band (CB) offset in comparison with that of CdTe/CdSe (1.22 eV vs 0.27 eV) are adopted as sensitizers in the construction of quantum dot sensitized solar cells (QDSCs). The augment of band offset produces an increase of the charge accumulation across the QD/TiO2 interface under illumination and induces stronger dipole effects, therefore bringing forward an upward shift of the TiO2 CB edge after sensitization and resulting in enhancement of the photovoltage of the resultant cell devices. The variation of relative chemical capacitance, Cμ, between ZnTe/CdSe and reference CdTe/CdSe cells extracted from impedance spectroscopy (IS) characterization under dark and illumination conditions clearly demonstrates that, under light irradiation conditions, the sensitization of ZnTe/CdSe QDs upshifts the CB edge of TiO2 by the level of ∼ 50 mV related to that in the reference cell and results in the enhancement of V(oc) of the corresponding cell devices. In addition, charge extraction measurements have also confirmed the photovoltage enhancement in the ZnTe/CdSe cell related to reference CdTe/CdSe cell. Furthermore, transient grating (TG) measurements have revealed a faster electron injection rate for the ZnTe/CdSe-based QDSCs in comparison with the CdSe cells. The resultant ZnTe/CdSe QD-based QDSCs exhibit a champion power conversion efficiency of 7.17% and a certified efficiency of 6.82% under AM 1.5 G full one sun illumination, which is, as far as we know, one of the highest efficiencies for liquid-junction QDSCs.

  14. Study and modelling of the new generation Cd(Zn)Te X and gamma-ray detectors for space applications

    International Nuclear Information System (INIS)

    Dirks, Bob-Petrus-Franciscus

    2006-01-01

    The scientific astrophysics community needs a new instrument to gain more insight in the origin of the cosmic X-ray background, the physics of black holes and particle acceleration mechanisms in the energy range between 0.5 to 80 keV. Existing instruments like Chandra and XMM-Newton show very good results up to ∼10 keV but lack sufficient sensitivity above this value. In order to keep or improve the same performances up to ∼80 keV, grazing incidence mirrors with a large focal length of at least 20 m should be used. Since satellites this big cannot be launched with existing launchers, the mirror and detector must be placed on two different satellites flying in formation. The Simbol-X space mission will be the first project of this type. A high sensitivity at 80 keV requires not only a long focal length but also a detection unit with high spatial resolution, using detectors that are still efficient at these relatively high energies. CEA/Saclay/DAPNIA is developing this crucial element for the Simbol-X space mission. The imager consists of several modules, each built from individual X-ray mini-cameras. A single camera is a hybridisation of custom read-out electronics connected to a Cd(Zn)Te semiconductor crystal. The ensemble must be able to efficiently detect photons of up to 80 keV with an energy resolution of ∼1.3 keV (FWHM) at 68 keV. Furthermore it must be equipped with small pixels (∼500*500 μm"2) to attain the desired spatial resolution of 15 arcsec. In order to reach a good sensitivity and energy resolution, ultra-low noise read-out electronics in combination with high-quality semiconductor crystals are mandatory. The read-out electronics, baptised IDeF-X (Imaging Detector Front-end for X-rays), is also developed by CEA/Saclay. A thorough understanding of its functioning as well as its testing forms a part of this work. The spectroscopic performance of the detector is directly related to the electronics noise. The noise characteristics of the ASIC are

  15. Comparative Study on the Efficiency of the Photodynamic Inactivation of Candida albicans Using CdTe Quantum Dots, Zn(II Porphyrin and Their Conjugates as Photosensitizers

    Directory of Open Access Journals (Sweden)

    Osnir S. Viana

    2015-05-01

    Full Text Available The application of fluorescent II-VI semiconductor quantum dots (QDs as active photosensitizers in photodymanic inactivation (PDI is still being evaluated. In the present study, we prepared 3 nm size CdTe QDs coated with mercaptosuccinic acid and conjugated them electrostatically with Zn(II meso-tetrakis (N-ethyl-2-pyridinium-2-yl porphyrin (ZnTE-2-PyP or ZnP, thus producing QDs-ZnP conjugates. We evaluated the capability of the systems, bare QDs and conjugates, to produce reactive oxygen species (ROS and applied them in photodynamic inactivation in cultures of Candida albicans by irradiating the QDs and testing the hypothesis of a possible combined contribution of the PDI action. Tests of in vitro cytotoxicity and phototoxicity in fibroblasts were also performed in the presence and absence of light irradiation. The overall results showed an efficient ROS production for all tested systems and a low cytotoxicity (cell viability >90% in the absence of radiation. Fibroblasts incubated with the QDs-ZnP and subjected to irradiation showed a higher cytotoxicity (cell viability <90% depending on QD concentration compared to the bare groups. The PDI effects of bare CdTe QD on Candida albicans demonstrated a lower reduction of the cell viability (~1 log10 compared to bare ZnP which showed a high microbicidal activity (~3 log10 when photoactivated. The QD-ZnP conjugates also showed reduced photodynamic activity against C. albicans compared to bare ZnP and we suggest that the conjugation with QDs prevents the transmembrane cellular uptake of the ZnP molecules, reducing their photoactivity.

  16. Soil-water distribution coefficients and plant transfer factors for {sup 134}Cs, {sup 85}Sr and {sup 65}Zn under field conditions in tropical Australia

    Energy Technology Data Exchange (ETDEWEB)

    Twining, J.R. E-mail: jrt@ansto.gov.au; Payne, T.E.; Itakura, T

    2004-07-01

    Measurements of soil-to-plant transfer of {sup 134}Cs, {sup 85}Sr and {sup 65}Zn from two tropical red earth soils ('Blain' and 'Tippera') to sorghum and mung crops have been undertaken in the north of Australia. The aim of the study was to identify factors that control bioaccumulation of these radionuclides in tropical regions, for which few previous data are available. Batch sorption experiments were conducted to determine the distribution coefficient (K{sub d}) of the selected radionuclides at pH values similar to natural pH values, which ranged from about 5.5 to 6.7. In addition, K{sub d} values were obtained at one pH unit above and below the soil-water equilibrium pH values to determine the effect of pH. The adsorption of Cs showed no pH dependence, but the K{sub d} values for the Tippera soils (2300-4100 ml/g) exceeded those for the Blain soils (800-1200 ml/g) at equilibrium pH. This was related to the greater clay content of the Tippera soil. Both Sr and Zn were more strongly adsorbed at higher pH values, but the K{sub d} values showed less dependence on the soil type. Strontium K{sub d}s were 30-60 ml/g whilst Zn ranged from 160 to 1630 ml/g for the two soils at equilibrium pH. With the possible exception of Sr, there was no evidence for downward movement of radionuclides through the soils during the course of the growing season. There was some evidence of surface movement of labelled soil particles. Soil-to-plant transfer factors varied slightly between the soils. The average results for sorghum were 0.1-0.3 g/g for Cs, 0.4-0.8 g/g for Sr and 18-26 g/g for Zn (dry weight) with the initial values relating to Blain and the following values to Tippera. Similar values were observed for the mung bean samples. The transfer factors for Cs and Sr were not substantially different from the typical values observed in temperate studies. However, Zn transfer factors for plants grown on both these tropical soils were greater than for soils in

  17. Nano-crystalline p-ZnGa{sub 2}Te{sub 4}/n-Si as a new heterojunction diode

    Energy Technology Data Exchange (ETDEWEB)

    Sakr, G.B. [Nano-Science Lab., Department of Physics, Faculty of Education, Ain Shams University, Roxy, Cairo (Egypt); Fouad, S.S. [Department of Physics, Faculty of Education, Ain Shams University, Roxy, Cairo (Egypt); Yahia, I.S., E-mail: dr_isyahia@yahoo.com [Nano-Science Lab., Department of Physics, Faculty of Education, Ain Shams University, Roxy, Cairo (Egypt); Semicondcutor Lab., Department of Physics, Faculty of Education, Ain Shams University, Roxy, Cairo (Egypt); Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha (Saudi Arabia); Abdel Basset, D.M. [Department of Physics, Faculty of Education, Ain Shams University, Roxy, Cairo (Egypt); Yakuphanoglu, F. [Physics Department, Faculty of Science and Arts, Firat University, Elazig (Turkey)

    2013-02-15

    Graphical abstract: Display Omitted Highlights: ► ZnGa{sub 2}Te{sub 4}/Si thin film was prepared by thermal evaporation technique. ► XRD and AFM graphs support the nano-crystalline of the studied device. ► Dark current–voltage characteristics of the heterojunction diode were investigated. ► Electrical parameters and conduction mechanism were determined. ► Conduction mechanisms were controlled by TE, SCLC and TCLC. -- Abstract: In this communication, ZnGa{sub 2}Te{sub 4} thin film was prepared by thermal evaporation technique on n-Si substrate. P-ZnGa{sub 2}Te{sub 4}/n-Si heterojunction diode was fabricated. The structure of ZnGa{sub 2}Te{sub 4} thin film was checked by XRD pattern and confirmed by AFM micrographs. The dark current–voltage characteristics of the heterojunction diode were investigated to determine the electrical parameters and conduction mechanism as a function of forward and reverse biasing conditions in the range (−10 V to 10 V) at temperature interval (303–423 K). The conduction mechanism was controlled by thermionic emission, space charge limited (SCLC) and trap-charge limited current (TCLC) mechanisms. The basic parameters such as the series resistance R{sub s}, the shunt resistance R{sub sh}, the ideality factor n and the barrier height φ{sub b} of the diode, the total density of trap states N{sub 0} and the exponential trapping distribution P{sub o} were determined. The obtained results showed that ZnGa{sub 2}Te{sub 4} is a good candidate for the applications of electronic devices.

  18. First-principles study on electronic and optical properties of Cu2ZnSiV I4 (VI=S, Se, and Te quaternary semiconductors

    Directory of Open Access Journals (Sweden)

    Xuebiao Zhang

    2015-05-01

    Full Text Available The electronic and optical properties of Cu2ZnSiS4, Cu2ZnSiSe4 and Cu2ZnSiTe4 in kesterite and stannite structures are systematically studied using first-principles calculations. Crystal field splitting, optical transitions, p-d bonding, and anti-bonding overlapping are analyzed. The physical and chemical trends in these properties are investigated with respect to the crystal structure and anion atomic number. The optical spectra, such as dielectric function, refractive index, reflectivity and absorption coefficient are explored in a broad range of energy. A good agreement between the calculated results and experimental data is obtained.

  19. CdCl{sub 2} treatment related diffusion phenomena in Cd{sub 1−x}Zn{sub x}S/CdTe solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Kartopu, G., E-mail: giray.kartopu@glyndwr.ac.uk; Clayton, A. J.; Barrioz, V.; Lamb, D. A.; Irvine, S. J. C. [Centre for Solar Energy Research (CSER), Glyndŵr University, OpTIC, St. Asaph Business Park, St. Asaph LL17 0JD (United Kingdom); Taylor, A. A. [Physics Department, Durham University, Durham DH1 3LE (United Kingdom)

    2014-03-14

    Utilisation of wide bandgap Cd{sub 1−x}Zn{sub x}S alloys as an alternative to the CdS window layer is an attractive route to enhance the performance of CdTe thin film solar cells. For successful implementation, however, it is vital to control the composition and properties of Cd{sub 1−x}Zn{sub x}S through device fabrication processes involving the relatively high-temperature CdTe deposition and CdCl{sub 2} activation steps. In this study, cross-sectional scanning transmission electron microscopy and depth profiling methods were employed to investigate chemical and structural changes in CdTe/Cd{sub 1−x}Zn{sub x}S/CdS superstrate device structures deposited on an ITO/boro-aluminosilicate substrate. Comparison of three devices in different states of completion—fully processed (CdCl{sub 2} activated), annealed only (without CdCl{sub 2} activation), and a control (without CdCl{sub 2} activation or anneal)—revealed cation diffusion phenomena within the window layer, their effects closely coupled to the CdCl{sub 2} treatment. As a result, the initial Cd{sub 1−x}Zn{sub x}S/CdS bilayer structure was observed to unify into a single Cd{sub 1−x}Zn{sub x}S layer with an increased Cd/Zn atomic ratio; these changes defining the properties and performance of the Cd{sub 1−x}Zn{sub x}S/CdTe device.

  20. Atomistic tight-binding computations of the structural and optical properties of CdTe/CdX (X=S and Se)/ZnS core/shell/shell nanocrystals

    Science.gov (United States)

    Sukkabot, Worasak

    2018-05-01

    A study of CdTe/CdX (X=S and Se)/ZnS core/shell/shell nanocrystals is carried out using atomistic tight-binding theory and the configuration interaction method to provide information for applications in bioimaging, biolabeling, display devices and near-infrared electronic instruments. The calculations yield the dependences of the internal and external passivated shells on the natural behaviours of CdTe/CdX (X=S and Se)/ZnS core/shell/shell nanocrystals. The reduction of the optical band gaps is observed with increasing numbers of monolayers in the external ZnS shell due to quantum confinement. Interestingly, the optical band gaps of CdTe/CdS/ZnS core/shell/shell nanocrystals are greater than those of CdTe/CdSe/ZnS core/shell/shell nanocrystals. In the presence of an external ZnS-coated shell, electron-hole wave function overlaps, oscillation strengths, ground-state exchange energies and Stokes shift are improved, whereas ground-state coulomb energies and fine-structure splitting are reduced. The oscillation strengths, Stokes shift and fine-structure splitting are reduced with the increase in external ZnS shell thickness. The oscillation strengths, Stokes shift and fine-structure splitting of CdTe/CdS/ZnS core/shell/shell nanocrystals are larger than those of CdTe/CdSe/ZnS core/shell/shell nanocrystals. Reduction of the atomistic electron-hole interactions is observed with increasing external ZnS shell size. The strong electron-hole interactions are more probed in CdTe/CdS/ZnS core/shell/shell nanocrystals than in CdTe/CdSe/ZnS core/shell/shell nanocrystals.

  1. Synthesis of Aqueous CdTe/CdS/ZnS Core/shell/shell Quantum Dots by a Chemical Aerosol Flow Method

    Directory of Open Access Journals (Sweden)

    Chen Dong

    2009-01-01

    Full Text Available Abstract This work described a continuous method to synthesize CdTe/CdS/ZnS core/shell/shell quantum dots. In an integrated system by flawlessly combining the chemical aerosol flow system working at high temperature (200–300°C to generate CdTe/CdS intermediate products and an additional heat-up setup at relatively low temperature to overcoat the ZnS shells, the CdTe/CdS/ZnS multishell structures were realized. The as-synthesized CdTe/CdS/ZnS core/shell/shell quantum dots are characterized by photoluminescence spectra, X-ray diffraction (XRD, energy-dispersive X-ray spectra (EDS, transmission electron microscopy (TEM, and high-resolution transmission electron microscopy (HRTEM. Fluorescence and XRD results confirm that the obtained quantum dots have a core/shell/shell structure. It shows the highest quantum yield above 45% when compared to the rhodamine 6G. The core/shell/shell QDs were more stable via the oxidation experiment by H2O2.

  2. Evaluation the image obtained from X-ray flat-panel detectors utilizing a polycrystalline CdZnTe film as the conversion layer

    International Nuclear Information System (INIS)

    Tokuda, S.; Kishihara, H.; Kaino, M.; Sato, T.

    2006-01-01

    We can expect that fluoroscopic images with a high sensitivity and excellent detective efficiency can be obtained by using a semiconductor with a small W factor for the conversion layer of X-ray flat-panel detectors, which have experienced a rapid gain inpopularity for medical and non-destructive industrial inspection uses in recent years. We believe that polycrystalline CdZnTe film formed by the closed spaced sublimation (CSS) method is a promising conversion material for next-generation high efficiency X-ray flat-panel detectors, and have previously reported the results of feasibility studies. In this paper, we present an overview of X-ray flat-panel detectors and the features of CdZnTe film, then we describe the CSS method of deposition and evaluation of the physical characteristics of CdZnTe film, and finally we present the results of our fabrication and testing of proto-type detectors utilizing CdZnTe film. (author)

  3. Benchmark assessment of density functional methods on group II-VI MX (M = Zn, Cd; X = S, Se, Te) quantum dots

    NARCIS (Netherlands)

    Azpiroz, Jon M.; Ugalde, Jesus M.; Infante, Ivan

    2014-01-01

    In this work, we build a benchmark data set of geometrical parameters, vibrational normal modes, and low-lying excitation energies for MX quantum dots, with M = Cd, Zn, and X = S, Se, Te. The reference database has been constructed by ab initio resolution-of-identity second-order approximate coupled

  4. Near-infrared emission and upconversion in Er{sup 3+}-doped TeO{sub 2}–ZnO–ZnF{sub 2} glasses

    Energy Technology Data Exchange (ETDEWEB)

    Miguel, A. [Departamento de Física Aplicada I, Escuela Superior de Ingeniería, Universidad del País Vasco UPV/EHU, Alda. Urquijo s/n 48013 Bilbao (Spain); Morea, R.; Gonzalo, J. [Instituto de Optica, Consejo Superior de Investigaciones Científicas CSIC, Serrano 121, 28006 Madrid (Spain); Arriandiaga, M.A. [Departamento de Física Aplicada II, Facultad de Ciencia y Tecnología, Universidad del País Vasco UPV/EHU, Apartado 644, Bilbao (Spain); Fernandez, J. [Departamento de Física Aplicada I, Escuela Superior de Ingeniería, Universidad del País Vasco UPV/EHU, Alda. Urquijo s/n 48013 Bilbao (Spain); Materials Physics Center CSIC-UPV/EHU and Donostia International Physics Center, 20018 San Sebastian (Spain); Balda, R., E-mail: wupbacrr@bi.ehu.es [Departamento de Física Aplicada I, Escuela Superior de Ingeniería, Universidad del País Vasco UPV/EHU, Alda. Urquijo s/n 48013 Bilbao (Spain); Materials Physics Center CSIC-UPV/EHU and Donostia International Physics Center, 20018 San Sebastian (Spain)

    2013-08-15

    We have investigated the near infrared emission and upconversion of Er{sup 3+} ions in two different compositions of glasses based on TeO{sub 2}, ZnO, and ZnF{sub 2} for different ErF{sub 3} concentrations (0.5, 1, 2, and 3 wt%). Judd–Ofelt intensity parameters have been determined and used to calculate the radiative transition probabilities and radiative lifetimes. The infrared emission at around 1532 nm corresponding to the {sup 4}I{sub 13/2}→{sup 4}I{sub 15/2} transition is broader by nearly 30 nm if compared to silica based glasses. The stimulated emission cross section is higher for the glass with the lowest content of ZnF{sub 2} which also shows higher values of the figure of merit for bandwidth. On the other hand, the lifetimes of the excited states are longer for the glass with the highest content of ZnF{sub 2}. Green and red emissions corresponding to transitions ({sup 2}H{sub 11/2},{sup 4}S{sub 3/2})→{sup 4}I{sub 15/2} and {sup 4}F{sub 9/2}→{sup 4}I{sub 15/2} have been observed under excitation at 801 nm and attributed to a two photon process. The temporal evolution of the green emission suggests the presence of excited state absorption and energy transfer upconversion processes to populate the {sup 4}S{sub 3/2} level. In the case of the red emission, its increase as ErF{sub 3} concentration increases together with its temporal behavior indicate that for ErF{sub 3} concentrations higher than 0.5 wt%, level {sup 4}F{sub 9/2} is populated by multiphonon relaxation from level {sup 4}S{sub 3/2} and energy transfer processes. -- Highlights: ► High absorption and emission cross-sections for the {sup 4}I{sub 13/2}↔{sup 4}I{sub 15/2} transition suitable for EDFAs. ► The increase of fluorine content leads to longer lifetimes of excited levels of Er{sup 3+} ions. ► Increase of the red upconversion emission with concentration due to ETU processes.

  5. First-principles calculations of a half-metallic ferromagnet zinc blende Zn{sub 1−x}V{sub x}Te

    Energy Technology Data Exchange (ETDEWEB)

    El Amine Monir, M.; Baltache, H. [Laboratoire de Physique Quantique de la Modélisation Mathématique (LPQ3M), Université de Mascara, 29000 (Algeria); Khenata, R., E-mail: khenata_rabah@yahoo.fr [Laboratoire de Physique Quantique de la Modélisation Mathématique (LPQ3M), Université de Mascara, 29000 (Algeria); Murtaza, G. [Materials Modeling Laboratory, Department of Physics, Islamia College University, Peshawar (Pakistan); Azam, Sikander [New Technologies-Research Center, University of West Bohemia, Univerzitni 8, 306 14 Pilsen (Czech Republic); Bouhemadou, A. [Laboratory for Developing New Materials and their Characterization, Department of Physics, Faculty of Science, University Setif 1, 19000 Setif (Algeria); Al-Douri, Y. [Institute of Nano Electronic Engineering, University Malaysia Perlis, 01000 Kangar, Perlis (Malaysia); Bin Omran, S. [Department of Physics and Astronomy, College of Science, King Saud University, P.O. Box 2455, Riyadh 11451 (Saudi Arabia); Ali, Roshan [Materials Modeling Lab, Department of Physics, Post Graduate Jahanzeb College, Swat (Pakistan)

    2015-03-15

    First-principles calculations have been used to study the structural, elastic, electronic, magnetic and thermal properties of zinc blende Zn{sub 1−x}V{sub x}Te for x=0, 0.25, 0.50, 0.75 and 1 using the full-potential linearized augmented plane wave method (FP-LAPW) based on spin-polarized density functional theory (DFT). The electronic exchange-correlation potential is approached using the spin generalized gradient approximation (spin-GGA). The structural properties of the Zn{sub 1−x}V{sub x}Te alloys (x=0, 0.25, 0.50, 0.75 and 1) are given for the lattice constants and the bulk moduli and their pressure derivatives. The elastic constants C{sub 11}, C{sub 12} and C{sub 44} are calculated using numerical first-principles calculations implemented in the WIEN2k package. An analysis of the band structures and the densities of states reveals that Zn{sub 0.50}V{sub 0.50}Te and Zn{sub 0.75}V{sub 0.25}Te exhibit a half-metallic character, while Zn{sub 0.25}V{sub 0.75}Te is nearly half-metallic. The band structure calculations are used to estimate the spin-polarized splitting energies Δ{sub x}(d) and Δ{sub x}(pd) produced by the V(3d)-doped and s(p)–d exchange constants N{sub 0α} (conduction band) and N{sub 0β} (valence band). The p–d hybridization reduces the magnetic moment of V from its atomic charge value of 3µ{sub B} and creates small local magnetic moments on the nonmagnetic Zn and Te sites. Finally, we present the thermal effect on the macroscopic properties of these alloys, such as the thermal expansion coefficient, heat capacity and Debye temperature, based on the quasi-harmonic Debye model. - Highlights: • Some physical properties of Vanadium doped ZnTe have been investigated. • Structural parameters for the parent compounds compare well with the available data. • The elastic and thermal properties are studied for the first time.

  6. Effect of precursors stoichiometry on morphology, crystallinity and electrical properties of ZnTe epilayers grown on (100)GaAs by MOVPE

    Energy Technology Data Exchange (ETDEWEB)

    Paiano, P.; Lovergine, N.; Mancini, A.M. [Dipartimento di Ingegneria dell' Innovazione, Universita di Lecce, Via Arnesano, I-73100 Lecce (Italy); Prete, P. [Istituto per la Microelettronica e Microsistemi del CNR, Sezione di Lecce, Via Arnesano, I-73100 Lecce (Italy)

    2005-11-01

    The effect of precursors vapour stoichiometry on the morphological, structural and electrical properties of nominally undoped ZnTe grown on (100)GaAs by metalorganic vapour phase epitaxy is reported. The epilayers were grown at 350 C using dimethylzinc (Me{sub 2}Zn) and di-isopropyltelluride, varying their molar flow rate ratios (MFRs) between 0.17 and 3.10. Growth in nearly stoichiometric (MFR=1.03) conditions results in best surface morphology, while samples grown in Te-rich conditions (MFR>1.7) showed micron-size hollow defects (with surface densities up to {proportional_to}10{sup 6} cm{sup -2}) elongated in one of the left angle 011 right angle in-plane directions. The defects are associated to a local structural disorder of the material, ascribed to the formation of a Ga{sub 2}Te{sub 3} extrinsic phase at the ZnTe/GaAs interface. Ohmic contacts to p -ZnTe epilayers were prepared by tungsten evaporation and annealing at 350 C. The RT hole concentration in the epilayers varies almost linearly with Me{sub 2}Zn molar flow between 2 x 10{sup 15} cm{sup -3} and 5 x 10{sup 16} cm{sup -3}. Temperature-dependent Hall measurements performed on samples grown at MFR{<=}1.03 demonstrate that the material p-type conductivity originates from a single acceptor centre with an ionisation energy between 94.7 meV and 118 meV, its concentration being in the 10{sup 16} cm{sup -3} range and slowly increasing with Me{sub 2}Zn flow. We ascribe this acceptor to a complex formed by a substitutional carbon atom on a Te site and a donor on a nearest neighbor site (C{sub Te}-D{sub Zn}), the donor impurity being further identified as Ga diffusing from the substrate. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  7. Internal electric-field-lines distribution in CdZnTe detectors measured using X-ray mapping

    International Nuclear Information System (INIS)

    Bolotnikov, A.E.; Camarda, G.S.; Cui, Y.; Hossain, A.; Yang, G.; Yao, H.W.; James, R.B.

    2009-01-01

    The ideal operation of CdZnTe devices entails having a uniformly distributed internal electric field. Such uniformity especially is critical for thick long-drift-length detectors, such as large-volume CPG and 3-D multi-pixel devices. Using a high-spatial resolution X-ray mapping technique, we investigated the distribution of the electric field in real devices. Our measurements demonstrate that in thin detectors, 1 cm, with a large aspect ratio (thickness-to-width ratio), we observed two effects: the electric field lines bending away from or towards the side surfaces, which we called, respectively, the focusing field-line distribution and the defocusing field-line distribution. In addition to these large-scale variations, the field-line distributions were locally perturbed by the presence of extended defects and residual strains existing inside the crystals. We present our data clearly demonstrating the non-uniformity of the internal electric field

  8. Dynamical control of Mn spin-system cooling by photogenerated carriers in a (Zn,Mn)Se/BeTe heterostructure

    Science.gov (United States)

    Debus, J.; Maksimov, A. A.; Dunker, D.; Yakovlev, D. R.; Tartakovskii, I. I.; Waag, A.; Bayer, M.

    2010-08-01

    The magnetization dynamics of the Mn spin system in an undoped (Zn,Mn)Se/BeTe type-II quantum well was studied by a time-resolved pump-probe photoluminescence technique. The Mn spin temperature was evaluated from the giant Zeeman shift of the exciton line in an external magnetic field of 3 T. The relaxation dynamics of the Mn spin temperature to the equilibrium temperature of the phonon bath after the pump-laser-pulse heating can be accelerated by the presence of free electrons. These electrons, generated by a control laser pulse, mediate the spin and energy transfer from the Mn spin system to the lattice and bypass the relatively slow direct spin-lattice relaxation of the Mn ions.

  9. Spectroscopy and visible frequency upconversion in Er3+-Yb3+: TeO2-ZnO glass.

    Science.gov (United States)

    Mohanty, Deepak Kumar; Rai, Vineet Kumar

    2014-01-01

    The UV-Vis-NIR absorption studies of the Er(3+)/Er(3+)-Yb(3+) doped/codoped TeO2-ZnO (TZO) glasses fabricated by the melting and quenching method has been performed. The spectroscopic radiative parameters viz. radiative transition probabilities, branching ratios and lifetimes have been determined from the absorption spectrum by using Judd-Ofelt theory. The near infrared (NIR) to visible frequency upconversion (UC) have been monitored by using an excitation of 976 nm wavelength radiation from a CW diode laser. The effect of codoping with Yb(3+) ions on the intensity of the UC emission bands from the Er(3+) ions throughout visible region has been studied. The mechanism responsible for the observed upconversion emissions in the prepared samples have been explained on the basis of excited state absorption and efficient energy transfer processes. Copyright © 2013 Elsevier B.V. All rights reserved.

  10. Development of (Cd,Zn)Te X-ray and gamma ray radiation detectors for medical and security applications

    International Nuclear Information System (INIS)

    Franc, J.; Hoeschl, P.; Belas, E.; Grill, V.; Fauler, A.; Dambacher, M.; Procz, S.

    2011-01-01

    Full text: There is a growing need for large area X-and Gamma radiation detectors for penetrating radiations in various fields of application e.g. astronomy, detectors for nuclear medicine, biosensor materials, security, non-proliferation of hazardous materials, and environmental applications etc. Direct X-rays conversion into electric charges in a semiconductor is envisaged with better spectroscopic characteristics to improve contrast and quantitative measurements compared to indirect detection using scintillators. The family of II-VI semiconductor materials combine a range of excellent properties such as their high sensitivity due to the high mobility-lifetime products, their high energy resolution as a consequence of the electron-hole pair formation energy, their reasonable maturity in terms of microelectronic technologies required for commercial detector fabrication, wide range of stopping power and band-gaps available. In particular, CdTe and Cd x Zn 1-x Te (CZT) with Zn=0.1 offer a favorable combination of physical and chemical properties that makes it attractive as a room temperature X-ray detector material of choice for many applications involving photon energies up to several hundreds of keV. From the scientific experience accumulated in the past years, the detector properties are strongly dependent on a series of parameters which must be strictly controlled during crystal growth, such as the homogeneity, stoichiometry and the related intrinsic defects which appear during the material growth, a high mobility-lifetime for electron and holes is mandatory etc. Production of detector-grade CdTe and CdZnTe on industrial scale is still a challenge and optimal growth methods and growth conditions have been under intensive investigation. Progress in crystal growth and characterization achieved in a project of Institute partnership between Charles University in Prague and University of Freiburg, Germany which was sponsored by Alexander von Humboldt Foundation, will

  11. Polarimetric analysis of a CdZnTe spectro-imager under multi-pixel irradiation conditions

    Energy Technology Data Exchange (ETDEWEB)

    Pinto, M. [LIP-Laboratório de Instrumentação e Física Experimental de Partículas (Portugal); Physics Department, University of Coimbra, Coimbra (Portugal); Curado da Silva, R.M., E-mail: rui.silva@coimbra.lip.pt [LIP-Laboratório de Instrumentação e Física Experimental de Partículas (Portugal); Physics Department, University of Coimbra, Coimbra (Portugal); Maia, J.M. [LIP-Laboratório de Instrumentação e Física Experimental de Partículas (Portugal); Physics Department, University of Beira-Interior, Covilhã (Portugal); Simões, N. [LIP-Laboratório de Instrumentação e Física Experimental de Partículas (Portugal); Physics Department, University of Coimbra, Coimbra (Portugal); Marques, J. [LIP-Laboratório de Instrumentação e Física Experimental de Partículas (Portugal); Centro de Astrofísica, Universidade do Porto, Porto (Portugal); Pereira, L.; Trindade, A.M.F. [LIP-Laboratório de Instrumentação e Física Experimental de Partículas (Portugal); and others

    2016-12-21

    So far, polarimetry in high-energy astrophysics has been insufficiently explored due to the complexity of the required detection, electronic and signal processing systems. However, its importance is today largely recognized by the astrophysical community, therefore the next generation of high-energy space instruments will certainly provide polarimetric observations, contemporaneously with spectroscopy and imaging. We have been participating in high-energy observatory proposals submitted to ESA Cosmic Vision calls, such as GRI (Gamma-Ray Imager), DUAL and ASTROGAM, where the main instrument was a spectro-imager with polarimetric capabilities. More recently, the H2020 AHEAD project was launched with the objective to promote more coherent and mature future high-energy space mission proposals. In this context of high-energy proposal development, we have tested a CdZnTe detection plane prototype polarimeter under a partially polarized gamma-ray beam generated from an aluminum target irradiated by a {sup 22}Na (511 keV) radioactive source. The polarized beam cross section was 1 cm{sup 2}, allowing the irradiation of a wide multi-pixelated area where all the pixels operate simultaneously as a scatterer and as an absorber. The methods implemented to analyze such multi-pixel irradiation are similar to those required to analyze a spectro-imager polarimeter operating in space, since celestial source photons should irradiate its full pixilated area. Correction methods to mitigate systematic errors inherent to CdZnTe and to the experimental conditions were also implemented. The polarization level (~40%) and the polarization angle (precision of ±5° up to ±9°) obtained under multi-pixel irradiation conditions are presented and compared with simulated data.

  12. New semiconductor scintillators ZnSe(Te,O) and integrated radiation detectors based thereon

    NARCIS (Netherlands)

    Ryzhikov, [No Value; Starzhinskiy, N; Gal'chinetskii, L; Gashin, P; Kozin, D; Danshin, E

    Data are presented on properties of a new type of scintillator based on isovalently doped crystals of zinc selenide. Depending upon concentration of activating dopants Te and O, the wavelength of the luminescence maximum is 590-640 nm, response time is 1-50 mus, and afterglow level after 5 ms is not

  13. Thermoelectric properties of In{sub 0.2}Co{sub 4}Sb{sub 12} skutterudites with embedded PbTe or ZnO nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Chubilleau, C.; Lenoir, B.; Candolfi, C.; Masschelein, P. [Université de Lorraine, CNRS, UMR 7198, Institut Jean Lamour, Parc de Saurupt, 54011 Nancy (France); Dauscher, A., E-mail: anne.dauscher@univ-lorraine.fr [Université de Lorraine, CNRS, UMR 7198, Institut Jean Lamour, Parc de Saurupt, 54011 Nancy (France); Guilmeau, E. [Laboratoire CRISMAT, UMR 6508, 6 boulevard Maréchal Juin, 14050 Caen Cedex (France); Godart, C. [ICMPE-CMTR, CNRS-UMR 7182, 2-8 rue H. Dunant, 94320 Thiais (France)

    2014-03-15

    Highlights: • Fabrication of nanostructured skutterudites ZnO or PbTe/In{sub 0.2}Co{sub 4}Sb{sub 12.} • Thermal conductivity modeling accounts for experimental results. • Greater lattice thermal conductivity decrease in In{sub 0.2}Co{sub 4}Sb{sub 12} than in CoSb{sub 3}. • A max ZT of 1.05 is obtained at 700 K in a 2 wt% ZnO-containing sample. -- Abstract: Transport properties of the skutterudite compound In{sub 0.2}Co{sub 4}Sb{sub 12} containing ZnO or PbTe nano-sized particles (2–12 wt%) were investigated by means of electrical resistivity, thermopower and thermal conductivity between 5 and 800 K. The composite powders were prepared by freeze-drying the nanoparticles with micron-sized In{sub 0.2}Co{sub 4}Sb{sub 12} powders. Densification was achieved by spark plasma sintering. All composites were characterized by X-ray powder diffraction and scanning electron microscopy. All the transport coefficients show similar temperature dependences suggesting little influence of the nature, semiconducting or insulating, of the nanoparticles. Both the electrical and the thermal conductivities decrease with increasing the PbTe or ZnO content. The impact of ZnO and PbTe on the thermal conductivity was modelled based on the Debye model taking into account a relaxation time constant reflecting phonon scattering by spherical nanoparticles. A maximum dimensionless figure of merit ZT of 1.05 at 700 K was achieved in a sample containing 2 wt% ZnO, a value quite similar to that of the reference In{sub 0.2}Co{sub 4}Sb{sub 12} compound.

  14. Synthesis, crystal structure and electrical properties of the tetrahedral quaternary chalcogenides CuM{sub 2}InTe{sub 4} (M=Zn, Cd)

    Energy Technology Data Exchange (ETDEWEB)

    Nolas, George S., E-mail: gnolas@usf.edu [Department of Physics, University of South Florida, Tampa, FL 33620 (United States); Hassan, M. Shafiq; Dong, Yongkwan [Department of Physics, University of South Florida, Tampa, FL 33620 (United States); Martin, Joshua [Material Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899 (United States)

    2016-10-15

    Quaternary chalcogenides form a large class of materials that continue to be of interest for energy-related applications. Certain compositions have recently been identified as possessing good thermoelectric properties however these materials typically have the kesterite structure type with limited variation in composition. In this study we report on the structural, optical and electrical properties of the quaternary chalcogenides CuZn{sub 2}InTe{sub 4} and CuCd{sub 2}InTe{sub 4} which crystallize in the modified zinc-blende crystal structure, and compare their properties with that of CuZn{sub 2}InSe{sub 4}. These p-type semiconductors have direct band gaps of about 1 eV resulting in relatively high Seebeck coefficient and resistivity values. This work expands on the research into quaternary chalcogenides with new compositions and structure types in order to further the fundamental investigation of multinary chalcogenides for potential thermoelectrics applications. - Graphical abstract: The structural, optical and electrical properties of the quaternary chalcogenides CuZn{sub 2}InTe{sub 4} and CuCd{sub 2}InTe{sub 4} are reported for the first time. The unique crystal structure allows for relatively good electrical transports and therefore potential for thermoelectric applications. - Highlights: • The physical properties of CuZn{sub 2}InTe{sub 4} and CuCd{sub 2}InTe{sub 4} are reported for the first time. • These materials have potential for thermoelectric applications. • Their direct band gaps also suggest potential for photovoltaics applications.

  15. Thermal, optical and structural properties of glasses within the TeO{sub 2}-TiO{sub 2}-ZnO system

    Energy Technology Data Exchange (ETDEWEB)

    Ghribi, N. [CNRS-Université de Limoges, Science des Procédés Céramiques et de Traitements de Surface, UMR7315 CNRS, Centre Européen de la Céramique, 12 rue Atlantis, 87068 Limoges Cedex (France); Sciences des Matériaux et de l’Environnement Laboratory, Sfax University, Route de Soukra km 4, 3038 Sfax (Tunisia); Dutreilh-Colas, M.; Duclère, J.-R. [CNRS-Université de Limoges, Science des Procédés Céramiques et de Traitements de Surface, UMR7315 CNRS, Centre Européen de la Céramique, 12 rue Atlantis, 87068 Limoges Cedex (France); Hayakawa, T. [Field of Advanced Energy Conversion, Department of Frontier Materials, Nagoya Institute of Technology, Gokiso, Showa, Nagoya 466-8555 (Japan); Carreaud, J. [CNRS-Université de Limoges, Science des Procédés Céramiques et de Traitements de Surface, UMR7315 CNRS, Centre Européen de la Céramique, 12 rue Atlantis, 87068 Limoges Cedex (France); Karray, R.; Kabadou, A. [Sciences des Matériaux et de l’Environnement Laboratory, Sfax University, Route de Soukra km 4, 3038 Sfax (Tunisia); and others

    2015-02-15

    Highlights: • This paper reports on original results on new tellurium oxide-based glasses which are actually very promising glasses in the field of nonlinear optics. • We present for the first time the determination of a new glassy system and the structure of the glasses has been investigated using Raman spectroscopy which is actually the most adapted method in laboratory to study the local structure of tellurite glasses, a detail linear and non-linear optical study is also presented. - Abstract: A glass-forming domain was evidenced and studied within the TeO{sub 2}-TiO{sub 2}-ZnO system. Density, glass transition temperature (T{sub g}) and onset crystallization temperature (T{sub 0}) were measured and interpreted as a function of the zinc oxide mole fraction for relevant glasses. It was concluded that the zinc oxide favors the thermal stability of glasses. On the other hand, the impact of TiO{sub 2} addition is even more pronounced on the enhancement of the thermal stability. The optical transmission was recorded for series of glasses in the UV-Visible-NIR range. Refractive index and optical band gap were extracted from these measurements and studied as a function of the ZnO content. Linear refractive indices and optical band gap were found to decrease and increase respectively, with increasing ZnO content. The third-order non-linear susceptibility Re (χ{sup 3}), measured for two series of glasses (TiO{sub 2} content was fixed either to 5 or 10 mol%), was found to progressively decrease when the ZnO concentration increases. The impact of ZnO modifier on the glass structure was discussed based on Raman spectroscopy data. We evidenced that TiO{sub 2} does not change drastically the glass network, whereas ZnO leads in a first step to the breaking of the Te-O-Te bridges, inducing network depolymerization. A further addition in ZnO leads to the formation of new Te-O-Zn and Zn-O-Zn linkages.

  16. Decontaminating effectiveness of Ca-, Zn-, MnDTPA chelates in contamination with inner radioisotopes 137Cs, 144Ce, 131I, 90Sr

    International Nuclear Information System (INIS)

    Kossakowski, S.

    1987-01-01

    The studies were carried out on 240 rabbits divided into 4 groups, in which, after contamination with radioisotopes 137 Cs (A), 144 Ce (B), 131 I (C), 90 Sr (D), Ca-, Zn-, MnDTPA chelates were used in 12.5% water solutions in doses of 0.4 g/kg of body weight. The evaluation of the decontaminating effectiveness of the above DTPA compounds, taking into account veterinary-clinical and veterinary-sanitary aspects, was made after 1,2,4,6,15 days from the contamination. The results expressing the per cent values of radioactivity of the organs are presented in individual groups. From these data it can be assumed for practical veterinary purposes that Ca-, Zn-, MnDTPA chelates show an effective action with respect to the veterinary-clinical aspect in contamination with radiocerium and with respect to the veterinary-sanitary aspect in contamination with radiocerium and radioiodine; less effective action with respect to the veterinary-sanitary aspect and ineffective with respect to the veterinary-clinical aspect in contamination with radiocesium; negative one with respect to both aspects in contamination with radiostrontium. As regards the individual chelating compounds, the most effective can be recognized sodium zinc salt of DTPA. 58 refs., 4 tabs. (author)

  17. Foliar contamination of plants with aerosols of 137Cs, 85Sr, 133Ba and 123mTe: influence of rain

    International Nuclear Information System (INIS)

    Madoz-Escande, C.; Bonhomme, T.; Poncet-Bonnard, D.

    2004-01-01

    Different types of plants (lettuce, radish and grass sward) were contaminated by dry deposition of radioactive aerosols ( 137 Cs, 85 Sr, 133 Ba and 123m Te). Due to the rain efficiency in decreasing radiological contamination of crops, a range of rain scenarios was applied on these three types of plants. These experiments aimed at improving the prediction of the consequences on agricultural products of a nuclear accident occurring on a PWR, and also at improving the understanding of the different processes occurring between the contamination and the first harvest. For a plant species at a given stage of its growth cycle, interception of the four radionuclides was identical and varied from 68% for radish to 84% for grass. The interception of aerosols by lettuce was intermediary with 75% (at the middle of ripeness stage) or 78%(at the mature plant stage). By the use of a conceptual model, the predominance between the two processes: washing-off the leaves and absorption through the leaves cuticles that allows the translocation, was evidenced. For Cs, Sr and Ba,, for the lettuce and the radish the washing-off process on the foliar cover of lettuce and radish was the most significant during the first rain. The absorption process inside the plant became dominant only from the third rain event. Tellurium had a particular behaviour: it was non-mobile and stayed put on the leaves. The values of the washing-off and absorption coefficients were estimated. For the grass, during the washing-off, radionuclides had a tendency to accumulate in the basal parts of plant first and the root matt later. Moreover, grass cuts came in between the rains. The global transfer factor values were dependant on both the radionuclides and the plant species, nevertheless the higher value was obtained for the cesium, whatever the plant and the rain (from 0,06 m 2 .kg fresh -1 for radish to 0,1 m 2 .kg fresh -1 for whole lettuce). (author)

  18. Correlation of point defects in CdZnTe with charge transport:application to room-temperature x-ray and gamma-ray. Final Technical Report

    International Nuclear Information System (INIS)

    Giles, Nancy C.

    2003-01-01

    The primary goal of this project has been to characterize and identify point defects in CdZnTe. There are two experimental focus areas: (1) photoluminescence and EPR. Results are compared with radiation detector performance. Applications requiring room-temperature x-ray and gamma-ray detectors are rapidly increasing and now include nuclear medicine, space sciences, national security, environmental remediation, nonproliferation inspections, etc. To meet these needs, a new generation of detectors based on single crystals of cadmium zinc telluride (Cd 1-x Zn x Te) is being developed. This semiconductor material possesses many desirable detector properties, such as constituent atoms with high atomic number (Z), a sufficiently large band gap to minimize leakage currents at room temperature, and high intrinsic mobility-lifetime (p) products for electrons and holes. However, despite the tremendous promise of this material, problems clearly exist. CdZnTe crystals are difficult to grow in large sizes and with ultra-high purity. There is a need to further lower the leakage currents in detector-grade material and also to increase the efficiency of charge collection. In general, all aspects of carrier trapping in this material must be understood and minimized. Point defects are a primary reason CdZnTe crystals have not yet reached their expected levels of performance. Thus, a better understanding of the role of point defects and the larger microstructure defects on the transport of electrons and holes will lead to improved detector-grade CdZnTe. The primary goal of this project has been to characterize and identify point defects (e.g., impurities, vacancies, vacancy-impurity complexes, etc.) in CdZnTe and determine the mechanisms by which these defects influence the carrier μτ products. Special attention is given to the role of shallow donors, shallow acceptors, and deeper acceptors. There are two experimental focus areas in the project: (1) liquid-helium photoluminescence

  19. Interface Study of ITO/ZnO and ITO/SnO2 Complex Transparent Conductive Layers and Their Effect on CdTe Solar Cells

    Directory of Open Access Journals (Sweden)

    Tingliang Liu

    2013-01-01

    Full Text Available Transparent ITO/ZnO and ITO/SnO2 complex conductive layers were prepared by DC- and RF-magnetron sputtering. Their structure and optical and electronic performances were studied by XRD, UV/Vis Spectroscopy, and four-probe technology. The interface characteristic and band offset of the ITO/ZnO, ITO/SnO2, and ITO/CdS were investigated by Ultraviolet Photoelectron Spectroscopy (UPS and X-ray Photoelectron Spectroscopy (XPS, and the energy band diagrams have also been determined. The results show that ITO/ZnO and ITO/SnO2 films have good optical and electrical properties. The energy barrier those at the interface of ITO/ZnO and ITO/SnO2 layers are almost 0.4 and 0.44 eV, which are lower than in ITO/CdS heterojunctions (0.9 eV, which is beneficial for the transfer and collection of electrons in CdTe solar cells and reduces the minority carrier recombination at the interface, compared to CdS/ITO. The effects of their use in CdTe solar cells were studied by AMPS-1D software simulation using experiment values obtained from ZnO, ITO, and SnO2. From the simulation, we confirmed the increase of Eff, FF, Voc, and Isc by the introduction of ITO/ZnO and ITO/SnO2 layers in CdTe solar cells.

  20. Comparative acid-base properties of the surface of components of the CdTe-ZnS system in series of substitutional solid solutions and their analogs

    Science.gov (United States)

    Kirovskaya, I. A.; Kasatova, I. Yu.

    2011-07-01

    The acid-base properties of the surface of solid solutions and binary components of the CdTe-ZnS system are studied by hydrolytic adsorption, nonaqueous conductometric titration, mechanochemistry, IR spectroscopy, and Raman scattering spectroscopy. The strength, nature, and concentration of acid centers on the original surface and that exposed to CO are determined. The changes in acid-base properties in dependence on the composition of the system under investigation in the series of CdB6, ZnB6 analogs are studied.

  1. Detection of electron and hole traps in CdZnTe radiation detectors by thermoelectric emission spectroscopy and thermally stimulated conductivity

    International Nuclear Information System (INIS)

    Lee, E.Y.; Brunett, B.A.; Olsen, R.W.; Van Scyoc, J.M. III; Hermon, H.; James, R.B.

    1998-01-01

    The electrical properties of CdZnTe radiation detectors are largely determined by electron and hole traps in this material. The traps, in addition to degrading the detector performance, can function as dopants and determine the resistivity of the material. Thermoelectric emission spectroscopy and thermally stimulated conductivity are used to detect these traps in a commercially available spectrometer-grade CdZnTe detector, and the electrical resistivity is measured as a function of temperature. A deep electron trap having an energy of 695 meV and cross section of 8 x 10 -16 cm 2 is detected and three hole traps having energies of 70 ± 20 meV, 105 ± 30 meV and 694 ± 162 meV are detected. A simple model based on these traps explains quantitatively all the data, including the electrical properties at room temperature and also their temperature dependence

  2. Performance comparison of small-pixel CdZnTe radiation detectors with gold contacts formed by sputter and electroless deposition

    Science.gov (United States)

    Bell, S. J.; Baker, M. A.; Duarte, D. D.; Schneider, A.; Seller, P.; Sellin, P. J.; Veale, M. C.; Wilson, M. D.

    2017-06-01

    Recent improvements in the growth of wide-bandgap semiconductors, such as cadmium zinc telluride (CdZnTe or CZT), has enabled spectroscopic X/γ-ray imaging detectors to be developed. These detectors have applications covering homeland security, industrial analysis, space science and medical imaging. At the Rutherford Appleton Laboratory (RAL) a promising range of spectroscopic, position sensitive, small-pixel Cd(Zn)Te detectors have been developed. The challenge now is to improve the quality of metal contacts on CdZnTe in order to meet the demanding energy and spatial resolution requirements of these applications. The choice of metal deposition method and fabrication process are of fundamental importance. Presented is a comparison of two CdZnTe detectors with contacts formed by sputter and electroless deposition. The detectors were fabricated with a 74 × 74 array of 200 μm pixels on a 250 μm pitch and bump-bonded to the HEXITEC ASIC. The X/γ-ray emissions from an 241Am source were measured to form energy spectra for comparison. It was found that the detector with contacts formed by electroless deposition produced the best uniformity and energy resolution; the best pixel produced a FWHM of 560 eV at 59.54 keV and 50% of pixels produced a FWHM better than 1.7 keV . This compared with a FWHM of 1.5 keV for the best pixel and 50% of pixels better than 4.4 keV for the detector with sputtered contacts.

  3. Correlated analysis of 2 MeV proton-induced radiation damage in CdZnTe crystals using photoluminescence and thermally stimulated current techniques

    Energy Technology Data Exchange (ETDEWEB)

    Gu, Yaxu [State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi’an 710072 (China); Key Laboratory of Radiation Detection Materials and Devices of Ministry of Industry and Information Technology, Northwestern Polytechnical University, Xi’an 710072 (China); Jie, Wanqi, E-mail: jwq@nwpu.edu.cn [State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi’an 710072 (China); Key Laboratory of Radiation Detection Materials and Devices of Ministry of Industry and Information Technology, Northwestern Polytechnical University, Xi’an 710072 (China); Rong, Caicai [Institute of Modern Physics, Applied Ion Beam Physics Laboratory, Fudan University, Shanghai 200433 (China); Wang, Yuhan; Xu, Lingyan; Xu, Yadong [State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi’an 710072 (China); Key Laboratory of Radiation Detection Materials and Devices of Ministry of Industry and Information Technology, Northwestern Polytechnical University, Xi’an 710072 (China); Lv, Haoyan; Shen, Hao [Institute of Modern Physics, Applied Ion Beam Physics Laboratory, Fudan University, Shanghai 200433 (China); Du, Guanghua [Materials Research Center, Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); Fu, Xu [State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi’an 710072 (China); Key Laboratory of Radiation Detection Materials and Devices of Ministry of Industry and Information Technology, Northwestern Polytechnical University, Xi’an 710072 (China); and others

    2016-11-01

    Highlights: • 2 MeV proton-induced radiation damage in CdZnTe crystals is investigated by PL and TSC techniques. • The influence of radiation damage on the luminescent and electrical properties of CdZnTe crystals is studied. • Intensity of PL spectrum is found to decrease significantly in irradiated regions, suggesting the increase of non-radiative recombination centers. • A correlated analysis of PL and TSC spectra suggests that the density of dislocations and A-centers increase after proton irradiation. - Abstract: Radiation damage induced by 2 MeV protons in CdZnTe crystals has been studied by means of photoluminescence (PL) and thermally stimulated current (TSC) techniques. A notable quenching of PL intensity is observed in the regions irradiated with a fluence of 6 × 10{sup 13} p/cm{sup 2}, suggesting the increase of non-radiative recombination centers. Moreover, the intensity of emission peak D{sub complex} centered at 1.48 eV dominates in the PL spectrum obtained from irradiated regions, ascribed to the increase of interstitial dislocation loops and A centers. The intensity of TSC spectra in irradiated regions decreases compared to the virgin regions, resulting from the charge collection inefficiency caused by proton-induced recombination centers. By comparing the intensity of identified traps obtained from numerical fitting using simultaneous multiple peak analysis (SIMPA) method, it suggests that proton irradiation under such dose can introduce high density of dislocation and A-centers in CdZnTe crystals, consistent with PL results.

  4. Effects of deposition temperatures on structure and physical properties of Cd 1-xZn xTe films prepared by RF magnetron sputtering

    Science.gov (United States)

    Zeng, Dongmei; Jie, Wanqi; Zhou, Hai; Yang, Yingge

    2010-02-01

    Cd 1-xZn xTe films were deposited by RF magnetron sputtering from Cd 0.9Zn 0.1Te crystals target at different substrate temperatures (100-400 °C). The effects of the deposition temperature on structure and physical properties of Cd 1-xZn xTe films have been studied using X-ray diffraction (XRD), step profilometer, atomic force microscopy (AFM), ultraviolet spectrophotometer and Hall effect measurements. X-ray studies suggest that the deposited films were polycrystalline with preferential (1 1 1) orientation. AFM micrographs show that the grain size was changed from 50 to 250 nm with the increase of deposition temperatures, the increased grain size may result from kinetic factors during sputtering growth. The optical transmission data indicate that shallow absorption edge occurs in the range of 744-835 nm and that the optical absorption coefficient is varied with the increase of deposition temperatures. In Hall Effect measurements, the sheet resistivities of the deposited films are 3.2×10 8, 3.0×10 8, 1.9×10 8 and 1.1×10 8 Ohm/sq, which were decreased with the increase of substrate temperatures. Analysis of the resistivity of films depended on the substrate temperatures is discussed.

  5. Tunable optical properties of ZnCdTe2-xSex(x =0.625) chalcopyrite for photovoltaics; a mBJLDA approach

    Science.gov (United States)

    Kashyap, Manish K.; Paudyal, D.; Harmon, B. N.

    In the present study, we have performed ab-initio simulations of sp-element defect in ZnCdTe2-xSex (x =0.625) chalcopyrite to check the tuning of band gap as compared to the pristine case. The exchange and correlation (XC) effects are taken into account by an orbital independent modified Becke-Johnson (mBJ) potential as coupled with Local Density Approximation (LDA) for these calculations. The calculated energy band structures show a direct band gap at the point in the brillouin zone for the pristine as well as the defected case and the band gap decreases with inclusion of sp-disorder. The imaginary dielectric function predicts the optical band gap of pristine ZnCdTe2 very close to the experimental value and the results are in reasonable agreement without applying any scissor operator. With inclusion of sp-element defect, the optical spectra is tuned to optimal region, suitable for photovoltaics. It is apparent that mBJ functional is well suited for calculating electronic structure of pristine as well as defected ZnCdTe2chalcopyrite. MKK acknowledges financial support from UGC, India in the form of RAMAN Post-doctoral fellowship. This work at Ames Laboratory was supported by the DOE, Office of Basic Energy Sciences, Materials Sciences Division under contract No. DE-AC02-07CH11358.

  6. The effects of Nd2O3 concentration in the laser emission of TeO2-ZnO glasses

    Science.gov (United States)

    Moreira, L. M.; Anjos, V.; Bell, M. J. V.; Ramos, C. A. R.; Kassab, L. R. P.; Doualan, D. J. L.; Camy, P.; Moncorgé, R.

    2016-08-01

    The present work reports the modification introduced by different Nd2O3 concentration on optical properties and the laser operation of Nd3+ doped (TeO2-ZnO) bulk tellurite glass. The spectroscopic data are analyzed within the Judd Ofelt formalism framework and the results are compared to the fluorescence lifetime and emission measurements to derive values for the quantum efficiency and the stimulated emission cross section of the considered 4F3/2 → 4I11/2 infrared laser transition around 1062.5 nm. Continuous-wave laser action is achieved with this bulk tellurite glass by pumping the sample inside a standard plan-concave mirror laser cavity with different output couplers. It is possible to observe coherent emission only for the lower concentration (0.5%(wt.) of Nd2 O3). Also laser action could only be observed for this sample with threshold pump power of 73 mW associated with a laser slope efficiency of 8% for an output coupler transmission of 4% indicating that TeO2-ZnO are potential materials for laser action. The results presented in this work together with those previously reported with higher concentration (1.0% (wt) of Nd2O3) determine the adequate Nd2O3 concentration for laser action and guide the correct experimental procedure for TeO2-ZnO glasses preparation.

  7. Comparison of radiation detector performance for different metal contacts on CdZnTe deposited by electroless deposition method

    Energy Technology Data Exchange (ETDEWEB)

    Zheng, Q.; Dierre, F.; Crocco, J.; Bensalah, H.; Dieguez, E. [Crystal Growth Laboratory, Department of Materials Physics, Universidad Autonoma de Madrid, 28049 Madrid (Spain); Ayoub, M. [Durham Scientific Crystals Laboratory, Netpark, Thomas Wright Way, Sedgefield, TS21, 3FD (United Kingdom); Corregidor, V.; Alves, E. [Unidade de Fisica e Aceleradores, LFI, ITN, E.N.10, 2686-953, Sacavem (Portugal); Fernandez-Ruiz, R. [Servicio Interdepartamental de Investigacion. Laboratorio de TXRF/Laue-XRD. Facultad de Ciencias, Universidad Autonoma de Madrid, 28049 Madrid (Spain); Perez, J.M. [CIEMAT, Edificio 22, Avda Complutense 22, 28040 Madrid (Spain)

    2011-11-15

    A comparative study of four different metals gold (Au), platinum (Pt), ruthenium (Ru) and rhodium (Rh) deposited on CdZnTe(CZT) by the electroless deposition method has been carried out. Two of these materials, Ru and Rh, have been deposited for the first time by this method. In contrast to the Pt deposition, the deposition of Ru and Rh were not carried out under the optimal conditions. The metals deposited on the samples were identified by Total reflection X-ray Fluorescence (TXRF). Rutherford Backscattering Spectrometry (RBS) analyses show that Au forms the thickest layer ({proportional_to}160 nm) for the experimental conditions of this work. Current-voltage measurements show that Pt forms a more linear ohmic contact with the lowest leakage current. A {sup 57}Co gamma ray spectrum gave a better detector performance with a FWHM 11 keV at 122 keV. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  8. Impedance spectroscopy of p-ZnGa{sub 2}Te{sub 4}/n-Si nano-HJD

    Energy Technology Data Exchange (ETDEWEB)

    Fouad, S.S. [Thin film Laboratory, Department of Physics, Faculty of Education, Ain Shams University, Roxy, Cairo (Egypt); Sakr, G.B. [Nano-Science Laboratory, Physics Department, Faculty of Education, Ain Shams University, Roxy, Cairo (Egypt); Yahia, I.S., E-mail: dr_isyahia@yahoo.com [Nano-Science Laboratory, Physics Department, Faculty of Education, Ain Shams University, Roxy, Cairo (Egypt); Semiconductor Laboratory, Physics Department, Faculty of Education, Ain Shams University, Roxy, Cairo (Egypt); Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha (Saudi Arabia); Abdel-Basset, D.M. [Nano-Science Laboratory, Physics Department, Faculty of Education, Ain Shams University, Roxy, Cairo (Egypt); Yakuphanoglu, F. [Department of Physics, Faculty of Science, Firat University, Elazig (Turkey)

    2013-04-15

    The dielectric relaxation and alternating current mechanisms of nano-crystalline p-ZnGa{sub 2}Te{sub 4}/n-Si heterojunction diode (HJD) were investigated by complex impedance spectroscopy over a wide range of temperature (297–473 K) and a frequency range (42 Hz–5 MHz). The bulk resistance R{sub b} as well as the bulk capacitance C{sub b} were found to increase with increasing temperature. The dc conductivity exhibits a typical Arrhenius behavior. The electrical activation energy ΔE{sub σ} was determined to be (0.28 eV). The ac conductivity spectrum was found to obey Jonscher's universal power law. The frequency exponent s decreases slightly with increasing temperature. The temperature dependence of ac conductivity can be reasonably interpreted in terms of the correlated barrier hopping (CBH) model. The dielectric constant ε{sub 1}(ω) and dielectric loss ε{sub 2}(ω) were found to decrease with increasing frequency and to increase with increasing temperature. The mean value of the exponent m decreases with increasing temperature. The dielectric analysis is described by non-Debye type behavior.

  9. Simulation-based evaluation and optimization of a new CdZnTe gamma-camera architecture (HiSens)

    International Nuclear Information System (INIS)

    Robert, Charlotte; Montemont, Guillaume; Rebuffel, Veronique; Guerin, Lucie; Verger, Loick; Buvat, Irene

    2010-01-01

    A new gamma-camera architecture named HiSens is presented and evaluated. It consists of a parallel hole collimator, a pixelated CdZnTe (CZT) detector associated with specific electronics for 3D localization and dedicated reconstruction algorithms. To gain in efficiency, a high aperture collimator is used. The spatial resolution is preserved thanks to accurate 3D localization of the interactions inside the detector based on a fine sampling of the CZT detector and on the depth of interaction information. The performance of this architecture is characterized using Monte Carlo simulations in both planar and tomographic modes. Detective quantum efficiency (DQE) computations are then used to optimize the collimator aperture. In planar mode, the simulations show that the fine CZT detector pixelization increases the system sensitivity by 2 compared to a standard Anger camera without loss in spatial resolution. These results are then validated against experimental data. In SPECT, Monte Carlo simulations confirm the merits of the HiSens architecture observed in planar imaging.

  10. True coincidence-summing corrections for the coincident γ-rays measured with coplanar grid CdZnTe detectors

    International Nuclear Information System (INIS)

    Yuecel, H.; Solmaz, A.N.; Koese, E.; Bor, D.

    2010-01-01

    In this study, true coincidence-summing (TCS) correction factors have been measured for the sources 22 Na, 60 Co, 133 Ba and 152 Eu by use of three large volume coplanar grid CdZnTe (acronym: CZT) detectors. In case of a close-in detection geometry, two different TCS calculation algorithms were used to compute the required TCS correction factors. Both of the algorithms are based on the measured total-to-peak (TTP) ratio and full-energy peak (FEP) efficiency values that were obtained using almost 'single' energy and coincidence-free nuclides. The results for TCS correction factors obtained by two different algorithms were agreeable to each other. The obtained TCS factors were ranged from about 7% to 30.5% in a 2250 mm 3 CZT detector when a close counting geometry was used. For other two detectors with a volume of 1000 and 1687.5 mm 3 , the resulted TCS correction factors were relatively smaller and varied between about 0.1% and 20% at the close counting geometry condition. Therefore, the results indicate that there is a need for the estimation of TCS corrections in CZT detectors, especially when their crystal volumes are greater than 1 cm 3 and these detectors are used in the case of a close-in detection geometry.

  11. Description of vibrational properties of random alloy ZnTe1-xSex within the percolation model

    International Nuclear Information System (INIS)

    Souhabi, Jihane; Chafi, Allal; Kassem, Mohammed; Nassour, Ayoub; Gleize, Jerome; Postnikov, A.V.; Hugel, J.; Pages, Olivier

    2009-01-01

    We discuss the classification of the phonon type behavior of semiconductor alloys as apparent in the Raman and infrared spectra, i.e. in terms of types (i) 1-bond→1-mode and (ii) 2-bond→1-mode (both covered by the Modified Random Element Isodisplacement model, operating at the macroscopic scale), and also (iii) the modified 2-mode type (exceptional), in the framework of the recent 1-bond→2-mode percolation model based on a description of the alloy disorder at the mesoscopic scale. The leading systems of types (i) and (iii), i.e., InGaAs and InGaP, respectively, were earlier shown to obey the percolation model. The aim of this work is to investigate whether the percolation model further extends to the leading system of the last type (ii), i.e. ZnTeSe. With this end in view, we perform a careful re-examination of the Raman and infrared spectra of this alloy, as available in the literature. Special attention is awarded to the discussion and modeling of the puzzling multi-mode infrared reflectivity spectra. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  12. The CdZnTe Detector with Slit Collimator for Measure Distribution of the Specific Activity Radionuclide in the Ground

    Science.gov (United States)

    Stepanov, V. E.; Volkovich, A. G.; Potapov, V. N.; Semin, I. A.; Stepanov, A. V.; Simirskii, Iu. N.

    2018-01-01

    From 2011 in the NRC "Kurchatov Institute" carry out the dismantling of the MR multiloop research reactor. Now the reactor and all technological equipment in the premises of the reactor were dismantled. Now the measurements of radioactive contamination in the reactor premises are made. The most contaminated parts of premises - floor and the ground beneath it. To measure the distribution of specific activity in the ground the CdZnTe detector (volume 500MM3) was used. Detector placed in a lead shielding with a slit collimation hole. The upper part of shielding is made movable to close and open the slit of the collimator. At each point two measurements carried out: with open and closed collimator. The software for determination specific activity of radionuclides in ground was developed. The mathematical model of spectrometric system based on the Monte-Carlo method. Measurements of specific activity of ground were made. Using the results of measurements the thickness of the removed layer of ground and the amount of radioactive waste were calculated.

  13. Thermal analyses, spectral characterization and structural interpretation of Nd3+/Er3+ ions co-doped TeO2-ZnCl2 glasses system

    Science.gov (United States)

    Ahmed, Kasim F.; Ibrahim, Saeed O.; Sahar, Md. R.; Mawlud, Saman Q.; Khizir, Hersh A.

    2017-09-01

    The Nd3+/Er3+ ions co-doped in the system of zinc-tellurite with the composition of (70-2x)TeO2-30ZnCl2-xNd2O3-xEr2O3 concentration from 1.0 to 3.0 mol% (x=1, 2 and 3) glasses were prepared by using conventional melt-quenching technique. The amorphous nature of the glass been confirmed by using X-RAY Diffraction Spectroscopy. Thermal characteristic were determined using a DTA. The obtained results discussed in terms of the glass structure. The glass structure studied by means of FTIR. Seven significant vibrational peaks around 471, 687, 742, 768, 1632, 2833 and 3378 cm-1 which correspond to the structural bonding of the glass are observed in a range of 400-4000cm-1. The peaks observed are consistent with the stretching and bending vibrations of the Te-O, TeO4 trigonal bipyramids, TeO3 trigonal pyramids, Te-O-Te and OH linkages respectively.

  14. Characterization of freshwater bivalves as radio contamination (57Co, 110mAg, 134Cs) bio-indicators in a metallic multi pollution context (Cd, Zn)

    International Nuclear Information System (INIS)

    Fraysse, B.

    2001-07-01

    This study concerns freshwater bio-indicators of radio-contamination, in a metallic multi-pollution context. Metals, such as cadmium (Cd) and zinc (Zn), are widely represented in aquatic ecosystems, and their concentrations can induce physiological effects. This chronicle exposure generates both metabolic and behaviour stress of individuals, and can also yield to detoxification mechanisms induction. The main goal of this work was to estimate the influence of metals on the radionuclides ( 57 Co, 110m Ag, 134 Cs) bioaccumulation by two different bivalve species (Corbicula fluminea et Dreissena polymorpha), by studying the contamination level, the kinetic of the radionuclide transfer and the soft-body repartition. As the exploratory feature of this study, two parts have been developed: (i) testing the problematic suitability in a really bio-monitoring situation, and (ii) analysing the metal/radionuclide interaction mechanisms under controlled and standardised conditions (laboratory). For the different experimental conditions explored (laboratory and field), radionuclide bioaccumulation by freshwater bivalves has been influenced by metal exposure. This result was obtained after assessing a decrease of the organisms contamination level by radionuclide and their accumulation rate, an increase of their depuration rate and tissue and cellular repartition changes. (author)

  15. Impact of ytterbium on photoluminescence from the modifier in TeO{sub 2}–ZnO:Ho{sup 3+} glass

    Energy Technology Data Exchange (ETDEWEB)

    Pandey, Anurag, E-mail: anuragpandey439@gmail.com; Kroon, R.E.; Kumar, Vinod; Swart, Hendrik C., E-mail: swarthc@ufs.ac.za

    2016-01-01

    The effect of incorporation of Yb{sup 3+} ions in Ho{sup 3+} doped TeO{sub 2}–ZnO glass prepared by a melt quenching method is discussed. The amorphous nature of the prepared glass was confirmed by X-ray diffraction analysis. The optical absorption spectrum displayed several peaks, which correspond to the dopant ions embedded into the TeO{sub 2}–ZnO glass. The photoluminescence emission spectra measured upon excitation with a 325 nm He–Cd laser revealed a broad emission band of the modifier (ZnO) along with other peaks of the Ho{sup 3+} ions. A comparison of codoped glass emission with the singly Ho{sup 3+} doped system showed significant enhancement of the ZnO emissions while the Ho{sup 3+} peaks were reduced. This may be due to the energy transfer involved between the dopant ions and the glass modifier at an excitation wavelength of 325 nm. The energy transfer mechanism is discussed with a suitable energy level structure and the colour of the light emitted from the glass has been examined by calculating the corresponding colour coordinates.

  16. Extraction chromatography of Am (III), Eu (III), Zn (II), and Cs (I), Using chromo sorb impregnated by 0..01 m 2-heptyl-2-methyl-nonanoic acid in benzene. Vol. 3

    Energy Technology Data Exchange (ETDEWEB)

    El-naggar, H A; Ramadan, A; Abdel-Fattah, A [Nuclear chemistry Department, Hot laboratories Center, Atomic Energy Authority, Cairo (Egypt)

    1996-03-01

    Extraction chromatography studies were carried out for Am(III), Eu(III), Zn(II), and Cs(I) using long carboxylic acid, 2-heptyl-2-methyl nonanoic acid in benzene as an extractant chromo sorb. This was selected to act as a solid support and it was impregnated with the extractant to obtain the stationary phase. The eluting agent used was 0.1 m H N O{sub 3}. The investigation included primarily the extraction chromatography of the individual elements concerned and their elution peaks which were plotted. Group separation of the four elements into two pairs was obtained Am-Eu, and Zn-Cs. A mixture of the four elements was loaded on the column to achieve practically such promising group separations. 5 figs.

  17. Extraction chromatography of Am (III), Eu (III), Zn (II), and Cs (I), Using chromo sorb impregnated by 0..01 m 2-heptyl-2-methyl-nonanoic acid in benzene. Vol. 3

    International Nuclear Information System (INIS)

    El-naggar, H.A.; Ramadan, A.; Abdel-Fattah, A.

    1996-01-01

    Extraction chromatography studies were carried out for Am(III), Eu(III), Zn(II), and Cs(I) using long carboxylic acid, 2-heptyl-2-methyl nonanoic acid in benzene as an extractant chromo sorb. This was selected to act as a solid support and it was impregnated with the extractant to obtain the stationary phase. The eluting agent used was 0.1 m H N O 3 . The investigation included primarily the extraction chromatography of the individual elements concerned and their elution peaks which were plotted. Group separation of the four elements into two pairs was obtained Am-Eu, and Zn-Cs. A mixture of the four elements was loaded on the column to achieve practically such promising group separations. 5 figs

  18. Cs_7Sm_1_1[TeO_3]_1_2Cl_1_6 and Rb_7Nd_1_1[TeO_3]_1_2Br_1_6, the new tellurite halides of the tetragonal Rb_6LiNd_1_1[SeO_3]_1_2Cl_1_6 structure type

    International Nuclear Information System (INIS)

    Charkin, Dmitri O.; Black, Cameron; Downie, Lewis J.; Sklovsky, Dmitry E.; Berdonosov, Peter S.; Olenev, Andrei V.; Zhou, Wuzong; Lightfoot, Philip; Dolgikh, Valery A.

    2015-01-01

    Two new rare-earth – alkali – tellurium oxide halides were synthesized by a salt flux technique and characterized by single-crystal X-ray diffraction. The structures of the new compounds Cs_7Sm_1_1[TeO_3]_1_2Cl_1_6 (I) and Rb_7Nd_1_1[TeO_3]_1_2Br_1_6 (II) (both tetragonal, space group I4/mcm) correspond to the sequence of [MLn_1_1(TeO_3)_1_2] and [M_6X_1_6] layers and bear very strong similarities to those of known selenite analogs. We discuss the trends in similarities and differences in compositions and structural details between the Se and Te compounds; more members of the family are predicted. - Graphical abstract: Two new rare-earth – alkali – tellurium oxide halides were predicted and synthesized. - Highlights: • Two new rare-earth – alkali – tellurium oxide halides were synthesized. • They adopt slab structure of rare earth-tellurium-oxygen and CsCl-like slabs. • The Br-based CsCl-like slabs have been observed first in this layered family.

  19. Cs7Sm11[TeO3]12Cl16 and Rb7Nd11[TeO3]12Br16, the new tellurite halides of the tetragonal Rb6LiNd11[SeO3]12Cl16 structure type

    Science.gov (United States)

    Charkin, Dmitri O.; Black, Cameron; Downie, Lewis J.; Sklovsky, Dmitry E.; Berdonosov, Peter S.; Olenev, Andrei V.; Zhou, Wuzong; Lightfoot, Philip; Dolgikh, Valery A.

    2015-12-01

    Two new rare-earth - alkali - tellurium oxide halides were synthesized by a salt flux technique and characterized by single-crystal X-ray diffraction. The structures of the new compounds Cs7Sm11[TeO3]12Cl16 (I) and Rb7Nd11[TeO3]12Br16 (II) (both tetragonal, space group I4/mcm) correspond to the sequence of [MLn11(TeO3)12] and [M6X16] layers and bear very strong similarities to those of known selenite analogs. We discuss the trends in similarities and differences in compositions and structural details between the Se and Te compounds; more members of the family are predicted.

  20. Solubility limit of Mn{sup 2+} ions in Zn{sub 1−x}Mn{sub x}Te nanocrystals grown within an ultraviolet-transparent glass template

    Energy Technology Data Exchange (ETDEWEB)

    Silva, Alessandra dos Santos, E-mail: alemestrado@gmail.com [Universidade Federal de Uberlândia, Laboratório de Novos Materiais Isolantes e Semicondutores (LNMIS), Instituto de Física (Brazil); Silva, Sebastião William da; Morais, Paulo Cesar de [Universidade de Brasília, Núcleo de Física Aplicada, Instituto de Física (Brazil); Dantas, Noelio Oliveira [Universidade Federal de Uberlândia, Laboratório de Novos Materiais Isolantes e Semicondutores (LNMIS), Instituto de Física (Brazil)

    2016-05-15

    This paper reports on the synthesis of Zn{sub 1−x}Mn{sub x}Te nanocrystals (NCs) (with 0 ≤ x ≤ 0.800) within a PZABP glass system (P{sub 2}O{sub 5}–ZnO–Al{sub 2}O{sub 3}–BaO–PbO) using the fusion method. The as-grown samples were investigated by optical absorption measurements, atomic force microscopy, X-ray diffraction, and Raman spectroscopy. The mean radius of the as-produced NCs (around R ≈ 2.2 nm) was well below the exciton Bohr radius of the bulk ZnTe (5.2 nm). All the characterization techniques employed in this report confirmed the successful inclusion of Mn{sup 2+} ions in the ZnTe-based NCs (Zn{sub 1−x}Mn{sub x}Te NCs) up to the nominal solubility limit of x = 0.100. Above this solubility limit (around x = 0.100), one can observe the formation of MnO and α-MnO{sub 2} NCs, since the nucleation rate for the formation of these NCs is greater than that of Zn{sub 1−x}Mn{sub x}Te NCs, at high x concentrations.Graphical abstract.

  1. The effect of substrate temperature upon the compositions of Mg and Se in Zn{sub 1-x}Mg{sub x}Se{sub y}Te{sub 1-y} layer grown by MOVPE

    Energy Technology Data Exchange (ETDEWEB)

    Nishio, M.; Ito, R.; Tanaka, K.; Urata, K.; Nakamura, Y.; Tanaka, T. [Department of Electrical and Electronic Engineering, Graduate School of Science and Engineering, Saga University, 1 Honjo, Saga 840-8502 (Japan); Saito, K.; Guo, Q.X. [Synchrotron Light Application Center, Saga University, 1 Honjo, Saga 840-8502 (Japan)

    2014-07-15

    The growth of Zn{sub 1-x}Mg{sub x}Se{sub y}Te{sub 1-y} layers was performed on (100) ZnTe substrate by metalorganic vapour phase epitaxy using dimethylzinc, bis-methylcyclopentadienyl-magnesium, diethyltelluride and diethylselenide. The effects of substrate temperature upon the compositions of Mg and Se have been investigated. The Mg composition in Zn{sub 1-x}Mg{sub x}Se{sub y}Te{sub 1-y} layer is significantly enhanced at low substrate temperature. Although the Se composition decreases with decreasing the substrate temperature, Zn{sub 1-x}Mg{sub x}Se{sub y}Te{sub 1-y} layer with a relatively high Se composition of 0.3 is obtainable at a low substrate temperature as low as 380 C. For all the layers, a two-mode behaviour with ZnTe- and MgTe-like longitudinal optical phonon modes is confirmed by Raman scattering. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  2. Effects of Cd{sub 1-x}Zn{sub x}S alloy composition and post-deposition air anneal on ultra-thin CdTe solar cells produced by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Clayton, A.J., E-mail: Andrew.J.Clayton@Swansea.ac.uk [Centre for Solar Energy Research, College of Engineering, Swansea University, OpTIC, St. Asaph, LL17 0JD (United Kingdom); Baker, M.A.; Babar, S.; Grilli, R. [The Surface Analysis Laboratory, Department of Mechanical Engineering Sciences, University of Surrey, Guildford, GU2 7XH (United Kingdom); Gibson, P.N. [Institute for Health and Consumer Protection, Joint Research Centre of the European Commission, 21027, Ispra, VA (Italy); Kartopu, G.; Lamb, D.A. [Centre for Solar Energy Research, College of Engineering, Swansea University, OpTIC, St. Asaph, LL17 0JD (United Kingdom); Barrioz, V. [Engineering and Environment, Department of Physics and Electrical Engineering, Northumbria University, Newcastle, NE1 8ST (United Kingdom); Irvine, S.J.C. [Centre for Solar Energy Research, College of Engineering, Swansea University, OpTIC, St. Asaph, LL17 0JD (United Kingdom)

    2017-05-01

    Ultra-thin CdTe:As/Cd{sub 1-x}Zn{sub x}S photovoltaic solar cells with an absorber thickness of 0.5 μm were deposited by metal-organic chemical vapour deposition on indium tin oxide coated boro-aluminosilicate substrates. The Zn precursor concentration was varied to compensate for Zn leaching effects after CdCl{sub 2} activation treatment. Analysis of the solar cell composition and structure by X-ray photoelectron spectroscopy depth profiling and X-ray diffraction showed that higher concentrations of Zn in the Cd{sub 1-x}Zn{sub x}S window layer resulted in suppression of S diffusion across the CdTe/Cd{sub 1-x}Zn{sub x}S interface after CdCl{sub 2} activation treatment. Excessive Zn content in the Cd{sub 1-x}Zn{sub x}S alloy preserved the spectral response in the blue region of the solar spectrum, but increased series resistance for the solar cells. A modest increase in the Zn content of the Cd{sub 1-x}Zn{sub x}S alloy together with a post-deposition air anneal resulted in an improved blue response and an enhanced open circuit voltage and fill factor. This device yielded a mean efficiency of 8.3% over 8 cells (0.25 cm{sup 2} cell area) and best cell efficiency of 8.8%. - Highlights: • CdCl{sub 2} anneal treatment resulted in S diffusing to the back contact. • High Zn levels created mixed cubic/hexagonal structure at the p-n junction. • Increased Zn in Cd{sub 1-x}Zn{sub x}S supressed S diffusion into CdTe. • Device V{sub oc} was enhanced overall with an additional back surface air anneal.

  3. Using CdTe/ZnSe core/shell quantum dots to detect DNA and damage to DNA

    Directory of Open Access Journals (Sweden)

    Moulick A

    2017-02-01

    Full Text Available Amitava Moulick,1,2 Vedran Milosavljevic,1,2 Jana Vlachova,1,2 Robert Podgajny,3 David Hynek,1,2 Pavel Kopel,1,2 Vojtech Adam1,2 1Department of Chemistry and Biochemistry, Mendel University, 2Central European Institute of Technology, Brno University of Technology, Brno, Czech Republic; 3Faculty of Chemistry, Jagiellonian University, Krakow, Poland Abstract: CdTe/ZnSe core/shell quantum dot (QD, one of the strongest and most highly luminescent nanoparticles, was directly synthesized in an aqueous medium to study its individual interactions with important nucleobases (adenine, guanine, cytosine, and thymine in detail. The results obtained from the optical analyses indicated that the interactions of the QDs with different nucleobases were different, which reflected in different fluorescent emission maxima and intensities. The difference in the interaction was found due to the different chemical behavior and different sizes of the formed nanoconjugates. An electrochemical study also confirmed that the purines and pyrimidines show different interactions with the core/shell QDs. Based on these phenomena, a novel QD-based method is developed to detect the presence of the DNA, damage to DNA, and mutation. The QDs were successfully applied very easily to detect any change in the sequence (mutation of DNA. The QDs also showed their ability to detect DNAs directly from the extracts of human cancer (PC3 and normal (PNT1A cells (detection limit of 500 pM of DNA, which indicates the possibilities to use this easy assay technique to confirm the presence of living organisms in extreme environments. Keywords: nanoparticles, nucleobases, biosensor, fluorescence, mutation

  4. New medical imaging systems exploiting the energy dispersive X-ray diffraction with spectrometric CdZnTe based detector

    International Nuclear Information System (INIS)

    Barbes, Damien

    2016-01-01

    This thesis studies the interest of measuring the coherent scattering of X-rays for breast diagnosis imaging. Nowadays, most of X-ray-based medical imaging techniques use the information of X-rays attenuation through the tissues. It is the case for mammography, the most common breast imaging modality. The recent emergence of energy resolved detectors (based on semiconductors in particular) allows to consider using another phenomenon: the coherent X-ray scattering. Measurement of diffracted spectra can provide new information related to the molecular structure of the examined tissues, in order to improve their characterization and therefore improve the final diagnosis. Two modalities are considered: the breast cancer detection in vivo, following a suspicious mammography result, or biopsy analysis. The coherent scattering measurement system developed during this thesis work uses energy-resolved CdZnTe-based detectors, these detectors combining performances (energy resolution, sensitivity, spatial resolution, and compactness) promising for clinical application. This system is also based on the detector pixelation, which allows to provide an imaging modality capable of characterizing analyzed materials or tissues in one direction without any translation or rotation. A complete study of the measurement system is proposed in this thesis, structured in three main parts: modeling and simulation of the system, development of the processing of the data measured by the detector in order to image and characterize the analyzed sample and finally, designing of a new and more complex experimental setup based on a whole detector and multi-slit collimation system. An experimental validation is proposed for each of these three parts. (author) [fr

  5. Spectroscopic and optical properties of the VO2+ ion doped TeO2-TiO2-ZnO-Nb2O5 glass system

    Science.gov (United States)

    Swapna; Upender, G.; Sreenivasulu, V.; Prasad, M.

    2016-04-01

    Studies such as optical absorption, Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy, Electron paramagnetic resonance (EPR) spectroscopy and Differential scanning calorimetry (DSC) were carried out on VO2+ ion doped TeO2-TiO2-ZnO-Nb2O5 glass system. Raman and FTIR spectra of the glasses revealed the presence of [TeO3], [TeO4] and [NbO6] structural units in the glass network. The Urbach energy (Δ E), cut-off wavelength (λ c ), optical band gap ( E opt ), optical basicity (Λ) and electron polarizability ( α) of the glasses were determined from optical absorption studies. The density ( ρ), molar volume ( V m ), oxygen molar volume ( V o ) and refractive index ( n) were also measured. Spin-Hamiltonian parameters were calculated from the EPR studies. When Nb2O5 was increased at the expense of ZnO, the density, optical band gap and Urbach energy of the glasses increased, and the electronic polarizability and optical basicity decreased. The EPR spectra clearly showed that vanadium was in the glass as VO2+ and occupied octahedral sites with tetrahedral compression. Spin-Hamiltonian parameters g‖ and g⊥ decreased as Nb2O5 content increased in the glass. The glass transition temperature ( T g ) also increased with increasing Nb2O5 content in the glass.

  6. Structural characterization of the high-temperature modification of the Cu{sub 2}ZnGeTe{sub 4} quaternary semiconductor compound

    Energy Technology Data Exchange (ETDEWEB)

    Nieves, L.; Marcano, G.; Power, C.; Rincon, C. [Centro de Estudios de Semiconductores, Departamento de Fisica, Facultad de Ciencias, Universidad de Los Andes, Merida, 5101 (Venezuela, Bolivarian Republic of); Delgado, G.E. [Laboratorio de Cristalografia, Departamento de Quimica, Facultad de Ciencias, Universidad de Los Andes, Merida, 5101 (Venezuela, Bolivarian Republic of); Lopez-Rivera, S.A. [Grupo de Fisica Aplicada, Departamento de Fisica, Facultad de Ciencias, Universidad de Los Andes, Merida, 5101 (Venezuela, Bolivarian Republic of)

    2016-06-15

    A combined study of the X-ray powder diffraction, differential thermal analysis, optical absorption, and Raman spectroscopy of the high-temperature modification of Cu{sub 2}ZnGeTe{sub 4} quaternary semiconductor, obtained by fast quenching from 820 K to ice water temperature, has been done. It has been found that this phase crystallizes in a tetragonal kesterite-type structure. From the analysis of the absorption coefficient spectra, the band gap energy of this material at room temperature has been found to be 1.49 eV. An optical transition from defect acceptor states to the conduction band is also observed below the fundamental absorption edge. Three strongest Raman lines observed at 116, 119, and 139 cm{sup -1} have been assigned to the A-symmetry modes. Also, lines at 81, 89, 97, and 263 cm{sup -1} tentatively ascribed as B or E-symmetry modes have been detected from the spectrum. The presence in this high-temperature modification of ZnTe and Cu{sub 2}GeTe{sub 3} secondary phases has been detected by both XRD and Raman spectroscopy. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  7. Optimal configuration of a low-dose breast-specific gamma camera based on semiconductor CdZnTe pixelated detectors

    Science.gov (United States)

    Genocchi, B.; Pickford Scienti, O.; Darambara, DG

    2017-05-01

    Breast cancer is one of the most frequent tumours in women. During the ‘90s, the introduction of screening programmes allowed the detection of cancer before the palpable stage, reducing its mortality up to 50%. About 50% of the women aged between 30 and 50 years present dense breast parenchyma. This percentage decreases to 30% for women between 50 to 80 years. In these women, mammography has a sensitivity of around 30%, and small tumours are covered by the dense parenchyma and missed in the mammogram. Interestingly, breast-specific gamma-cameras based on semiconductor CdZnTe detectors have shown to be of great interest to early diagnosis. Infact, due to the high energy, spatial resolution, and high sensitivity of CdZnTe, molecular breast imaging has been shown to have a sensitivity of about 90% independently of the breast parenchyma. The aim of this work is to determine the optimal combination of the detector pixel size, hole shape, and collimator material in a low dose dual head breast specific gamma camera based on a CdZnTe pixelated detector at 140 keV, in order to achieve high count rate, and the best possible image spatial resolution. The optimal combination has been studied by modeling the system using the Monte Carlo code GATE. Six different pixel sizes from 0.85 mm to 1.6 mm, two hole shapes, hexagonal and square, and two different collimator materials, lead and tungsten were considered. It was demonstrated that the camera achieved higher count rates, and better signal-to-noise ratio when equipped with square hole, and large pixels (> 1.3 mm). In these configurations, the spatial resolution was worse than using small pixel sizes (< 1.3 mm), but remained under 3.6 mm in all cases.

  8. Increased short circuit current in organic photovoltaic using high-surface area electrode based on ZnO nanowires decorated with CdTe quantum dots.

    Science.gov (United States)

    Aga, R S; Gunther, D; Ueda, A; Pan, Z; Collins, W E; Mu, R; Singer, K D

    2009-11-18

    A photosensitized high-surface area transparent electrode has been employed to increase the short circuit current of a photovoltaic device with a blend of poly(3-hexylthiophene) (P3HT) and (6,6)-phenyl C61 butyric acid methyl ester (PCBM) as the active layer. This is achieved by directly growing ZnO nanowires on indium tin oxide (ITO) film via a physical vapor method. The nanowire surface is then decorated with CdTe quantum dots by pulsed electron-beam deposition (PED). The nanowires alone provided a 20-fold increase in the short circuit current under visible light illumination. This was further increased by a factor of approximately 1.5 by the photosensitization effect of CdTe, which has an optical absorption of up to 820 nm.

  9. Preparation and optical properties of TeO2-BaO-ZnO-ZnF2 fluoro-tellurite glass for mid-infrared fiber Raman laser applications

    Science.gov (United States)

    Li, Jie; Xiao, Xusheng; Gu, Shaoxuan; Xu, Yantao; Zhou, Zhiguang; Guo, Haitao

    2017-04-01

    A serial of novel fluoro-tellurite glasses with compositions of 60TeO2-20BaO-(20-x)ZnO-xZnF2 (x = 0, 2, 4, 5 and 6 mol%) were prepared. The compositional dependences of glass structural evaluation, Raman gain coefficient, UV-Vis transmission spectrum, IR transmission spectrum, linear refractive index and third-order nonlinearity were analyzed. The results showed that the addition of 6 mol% ZnF2 can further improve the Raman gain coefficient to as well as 52 × 10-11 cm/W and effectively decrease around 73% and 57% absorption coefficients respectively caused by free Osbnd H groups (@3.3 μm) and hydrogen-bonded Osbnd H groups (@4.5 μm) in glass. Addition of ZnF2 does not change the UV-Vis absorption edge, optical band gap energy and infrared region cut-off edge almost, while the linear refraction index and ultrafast third-nonlinearity show unmonotonic changes. These novel fluoro-tellurite glasses may be suitable candidates for using in mid-infrared Raman fiber laser and/or amplifier.

  10. Investigation of structural, electronic, elastic and optical properties of Cd{sub 1-x-y}Zn{sub x}Hg{sub y}Te alloys

    Energy Technology Data Exchange (ETDEWEB)

    Tamer, M., E-mail: mehmet.tamer@zirve.edu.tr [Zirve University Faculty of Education, 27260, Gaziantep (Turkey)

    2016-06-15

    Structural, optical and electronic properties and elastic constants of Cd1{sub -x-y}Zn{sub x} Hg{sub y}Te alloys have been studied by employing the commercial code Castep based on density functional theory. The generalized gradient approximation and local density approximation were utilized as exchange correlation. Using elastic constants for compounds, bulk modulus, band gap, Fermi energy and Kramers–Kronig relations, dielectric constants and the refractive index have been found through calculations. Apart from these, X-ray measurements revealed elastic constants and Vegard’s law. It is seen that results obtained from theory and experiments are all in agreement.

  11. Characterization of a large-format, fine-pitch CdZnTe pixel detector for the HEFT balloon-Borne experiment

    OpenAIRE

    Chen, C. M. Hubert; Cook, Walter R.; Harrison, Fiona A.; Lin, Jiao Y. Y.

    2004-01-01

    We have developed a large-format CdZnTe pixel detector with custom, low-noise ASIC readout, for astrophysical applications. In particular, this detector is targeted for use in the High-Energy Focusing Telescope (HEFT), a balloon-borne experiment with focusing optics for 20-70 keV. The detector is a 24 X 44 pixel array of 498-µm pitch. As a focal plane detector, uniformity from pixel to pixel is very desirable. In this paper, we present the characterization of some detector properties for the ...

  12. Design and Measurement of a Low-Noise 64-Channels Front-End Readout ASIC for CdZnTe Detectors

    Energy Technology Data Exchange (ETDEWEB)

    Gan, Bo; Wei, Tingcun; Gao, Wu; Liu, Hui; Hu, Yann [School of Computer Science and Technology, Northwestern Polytechnical University, Xi' an (China)

    2015-07-01

    Cadmium zinc telluride (CdZnTe) detectors, as one of the principal detectors for the next-generation X-ray and γ-ray imagers, have high energy resolution and supporting electrode patterning in the radiation environment at room-temperature. In the present, a number of internationally renowned research institutions and universities are actively using these detector systems to carry out researches of energy spectrum analysis, medical imaging, materials characterization, high-energy physics, nuclear plant monitoring, and astrophysics. As the most important part of the readout system for the CdZnTe detector, the front-end readout application specific integrated circuit (ASIC) would have an important impact on the performances of the whole detector system. In order to ensure the small signal to noise ratio (SNR) and sufficient range of the output signal, it is necessary to design a front-end readout ASIC with very low noise and very high dynamic range. In addition, radiation hardness should be considered when the detectors are utilized in the space applications and high energy physics experiments. In this paper, we present measurements and performances of a novel multi-channel radiation-hardness low-noise front-end readout ASIC for CdZnTe detectors. The readout circuits in each channel consist of charge sensitive amplifier, leakage current compensation circuit (LCC), CR-RC shaper, S-K filter, inverse proportional amplifier, peak detect and hold circuit (PDH), discriminator and trigger logic, time sequence control circuit and driving buffer. All of 64 readout channels' outputs enter corresponding inputs of a 64 channel multiplexer. The output of the mux goes directly out of the chip via the output buffer. The 64-channel readout ASIC is implemented using the TSMC 0.35 μm mixed-signal CMOS technology. The die size of the prototype chip is 2.7 mm x 8 mm. At room temperature, the equivalent noise level of a typical channel reaches 66 e{sup -} (rms) at zero farad for a

  13. Structural study of the semimagnetic semiconductor Zn{sub 0.5}Mn{sub 0.5}In{sub 2}Te{sub 4}

    Energy Technology Data Exchange (ETDEWEB)

    Delgado, G.E. [Laboratorio de Cristalografia, Departamento de Quimica, Facultad de Ciencias, Universidad de Los Andes, Merida (Venezuela); Sagredo, V. [Laboratorio de Magnetismo en Solidos, Departamento de Quimica, Facultad de Ciencias, Universidad de Los Andes, Merida (Venezuela)

    2009-02-15

    The semimagnetic semiconductor alloy Zn{sub 0.5}Mn{sub 0.5}In{sub 2}Te{sub 4} was refined from an X-ray powder diffraction pattern using the Rietveld method. This compound crystallizes in the space group I anti 42m (N {sup circle} 121), Z=2, with unit cell parameters a=6.1738(1)A, c=12.3572(4)A, V=471.00(2)A3, c/a=2.00. This material crystallizes in a stannite-type structure. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  14. Study on the behavior of the heavy metals Cu, Cr, Ni, Zn, Fe, Mn and 137Cs in an estuarine ecosystem using Mytilus galloprovincialis as a bioindicator species: the case of Thermaikos gulf, Greece

    International Nuclear Information System (INIS)

    Catsiki, Vassiliki-Angelique; Florou, H.

    2006-01-01

    Mussels are worldwide recognized as pollution bioindicators and used in Mussel Watch programs, because they accumulate pollutants in their tissues at elevated levels in relation to pollutant biological availability in the marine environment. The present study deals with the use of Mytilus galloprovincialis as a local bioindicator of heavy metal and 137 Cs contamination in an estuarine ecosystem (Thermaikos gulf, Greece in Eastern Mediterranean). M. galloprovincialis samples were collected monthly from two aquaculture farms during the period April to October 2000. Analyses for the heavy metals Cu, Cr, Ni, Zn, Fe, Mn and 137 Cs showed that the concentrations measured were low and similar to those from other non-polluted Mediterranean areas. In terms of the two sampling stations, there were no statistically significant differences between them. On the contrary, the seasonal evolution of either heavy metals or 137 Cs levels presented high variation. The levels were found to increase during the cold period of the year, especially for Cu, Zn, Mn and Cr which are essential for life. Stable metals were positively inter-related and moreover, metals more involved in biochemical activities seem to present more correlations than others with less significant role in the metabolism of the organisms

  15. Solution-processed efficient CdTe nanocrystal/CBD-CdS hetero-junction solar cells with ZnO interlayer

    International Nuclear Information System (INIS)

    Tian, Yiyao; Zhang, Yijie; Lin, Yizhao; Gao, Kuo; Zhang, Yunpeng; Liu, Kaiyi; Yang, Qianqian; Zhou, Xiao; Qin, Donghuan; Wu, Hongbin; Xia, Yuxin; Hou, Lintao; Lan, Linfeng; Chen, Junwu; Wang, Dan; Yao, Rihui

    2013-01-01

    CdTe nanocrystal (NC)/CdS p–n hetero-junction solar cells with an ITO/ZnO-In/CdS/CdTe/MoO x /Ag-inverted structure were prepared by using a layer-by-layer solution process. The CdS thin films were prepared by chemical bath deposition on top of ITO/ZnO-In and were found to be very compact and pin-hole free in a large area, which insured high quality CdTe NCs thin-film formation upon it. The device performance was strongly related to the CdCl 2 annealing temperature and annealing time. Devices exhibited power conversion efficiency (PCE) of 3.08 % following 400 °C CdCl 2 annealing for 5 min, which was a good efficiency for solution processed CdTe/CdS NC-inverted solar cells. By carefully designing and optimizing the CdCl 2 -annealing conditions (370 °C CdCl 2 annealing for about 15 min), the PCE of such devices showed a 21 % increase, in comparison to 400 °C CdCl 2 -annealing conditions, and reached a better PCE of 3.73 % while keeping a relatively high V OC of 0.49 V. This PCE value, to the best of our knowledge, is the highest PCE reported for solution processed CdTe–CdS NC solar cells. Moreover, the inverted solar cell device was very stable when kept under ambient conditions, less than 4 % degradation was observed in PCE after 40 days storage

  16. Solution-processed efficient CdTe nanocrystal/CBD-CdS hetero-junction solar cells with ZnO interlayer

    Energy Technology Data Exchange (ETDEWEB)

    Tian, Yiyao; Zhang, Yijie; Lin, Yizhao; Gao, Kuo; Zhang, Yunpeng; Liu, Kaiyi; Yang, Qianqian [South China University of Technology, School of Materials Science and Engineering (China); Zhou, Xiao; Qin, Donghuan, E-mail: qindh@scut.edu.cn; Wu, Hongbin [South China University of Technology, Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices (China); Xia, Yuxin; Hou, Lintao [Jinan University, College of Science and Engineering (China); Lan, Linfeng; Chen, Junwu; Wang, Dan; Yao, Rihui [South China University of Technology, Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices (China)

    2013-11-15

    CdTe nanocrystal (NC)/CdS p–n hetero-junction solar cells with an ITO/ZnO-In/CdS/CdTe/MoO{sub x}/Ag-inverted structure were prepared by using a layer-by-layer solution process. The CdS thin films were prepared by chemical bath deposition on top of ITO/ZnO-In and were found to be very compact and pin-hole free in a large area, which insured high quality CdTe NCs thin-film formation upon it. The device performance was strongly related to the CdCl{sub 2} annealing temperature and annealing time. Devices exhibited power conversion efficiency (PCE) of 3.08 % following 400 °C CdCl{sub 2} annealing for 5 min, which was a good efficiency for solution processed CdTe/CdS NC-inverted solar cells. By carefully designing and optimizing the CdCl{sub 2}-annealing conditions (370 °C CdCl{sub 2} annealing for about 15 min), the PCE of such devices showed a 21 % increase, in comparison to 400 °C CdCl{sub 2}-annealing conditions, and reached a better PCE of 3.73 % while keeping a relatively high V{sub OC} of 0.49 V. This PCE value, to the best of our knowledge, is the highest PCE reported for solution processed CdTe–CdS NC solar cells. Moreover, the inverted solar cell device was very stable when kept under ambient conditions, less than 4 % degradation was observed in PCE after 40 days storage.

  17. Structural, thermal and optical properties of TeO2-ZnO-CdO-BaO glasses doped with VO(2+).

    Science.gov (United States)

    Sreenivasulu, V; Upender, G; Chandra Mouli, V; Prasad, M

    2015-09-05

    The glasses with composition 64TeO2-15ZnO-(20-x)CdO-xBaO-1V2O5 (0⩽x⩽20 mol%) were prepared by conventional melt quenching technique. X-ray diffraction analysis was used to confirm the amorphous nature of the glasses. The optical absorption studies revealed that the cut-off wavelength (λα) decreases while optical band gap energy (Eopt) and Urbach energy (ΔE) values increase with an increase of BaO content. Refractive index (n) evaluated from Eopt was found to decrease with an increase of BaO content. The physical parameters such as density (ρ), molar volume (Vm), oxygen packing density (OPD), optical basicity (Λ), molar refraction (Rm), and metallization criterion (M) evaluated and discussed. FTIR and Raman spectroscopic studies showed that the glass network consists of TeO4, TeO3+1/TeO3 and ZnO4 units as basic structural units. The glass transition temperature (Tg) of glass sample, onset crystallization temperature (To) and thermal stability ΔT were determined from Differential Scanning Calorimetry (DSC). Using electron paramagnetic resonance (EPR) spectra of vanadium glasses the spin Hamiltonian parameters and dipolar hyperfine coupling parameters of VO(2+) ions were calculated. It was found that V(4+) ions in these glasses exist as VO(2+) in octahedral coordination with a tetragonal distortion and have C4V symmetry with ground state dxy. Tetragonality (Δg∥/Δg⊥) of vanadium ion sites exhibited non-linear variation with BaO content. Copyright © 2015 Elsevier B.V. All rights reserved.

  18. Radiation dose reduction using a CdZnTe-based computed tomography system: Comparison to flat-panel detectors

    Energy Technology Data Exchange (ETDEWEB)

    Le, Huy Q.; Ducote, Justin L.; Molloi, Sabee [Department of Radiological Sciences, University of California, Irvine, California 92697 (United States)

    2010-03-15

    Purpose: Although x-ray projection mammography has been very effective in early detection of breast cancer, its utility is reduced in the detection of small lesions that are occult or in dense breasts. One drawback is that the inherent superposition of parenchymal structures makes visualization of small lesions difficult. Breast computed tomography using flat-panel detectors has been developed to address this limitation by producing three-dimensional data while at the same time providing more comfort to the patients by eliminating breast compression. Flat panels are charge integrating detectors and therefore lack energy resolution capability. Recent advances in solid state semiconductor x-ray detector materials and associated electronics allow the investigation of x-ray imaging systems that use a photon counting and energy discriminating detector, which is the subject of this article. Methods: A small field-of-view computed tomography (CT) system that uses CdZnTe (CZT) photon counting detector was compared to one that uses a flat-panel detector for different imaging tasks in breast imaging. The benefits afforded by the CZT detector in the energy weighting modes were investigated. Two types of energy weighting methods were studied: Projection based and image based. Simulation and phantom studies were performed with a 2.5 cm polymethyl methacrylate (PMMA) cylinder filled with iodine and calcium contrast objects. Simulation was also performed on a 10 cm breast specimen. Results: The contrast-to-noise ratio improvements as compared to flat-panel detectors were 1.30 and 1.28 (projection based) and 1.35 and 1.25 (image based) for iodine over PMMA and hydroxylapatite over PMMA, respectively. Corresponding simulation values were 1.81 and 1.48 (projection based) and 1.85 and 1.48 (image based). Dose reductions using the CZT detector were 52.05% and 49.45% for iodine and hydroxyapatite imaging, respectively. Image-based weighting was also found to have the least beam

  19. Radiation dose reduction using a CdZnTe-based computed tomography system: Comparison to flat-panel detectors

    International Nuclear Information System (INIS)

    Le, Huy Q.; Ducote, Justin L.; Molloi, Sabee

    2010-01-01

    Purpose: Although x-ray projection mammography has been very effective in early detection of breast cancer, its utility is reduced in the detection of small lesions that are occult or in dense breasts. One drawback is that the inherent superposition of parenchymal structures makes visualization of small lesions difficult. Breast computed tomography using flat-panel detectors has been developed to address this limitation by producing three-dimensional data while at the same time providing more comfort to the patients by eliminating breast compression. Flat panels are charge integrating detectors and therefore lack energy resolution capability. Recent advances in solid state semiconductor x-ray detector materials and associated electronics allow the investigation of x-ray imaging systems that use a photon counting and energy discriminating detector, which is the subject of this article. Methods: A small field-of-view computed tomography (CT) system that uses CdZnTe (CZT) photon counting detector was compared to one that uses a flat-panel detector for different imaging tasks in breast imaging. The benefits afforded by the CZT detector in the energy weighting modes were investigated. Two types of energy weighting methods were studied: Projection based and image based. Simulation and phantom studies were performed with a 2.5 cm polymethyl methacrylate (PMMA) cylinder filled with iodine and calcium contrast objects. Simulation was also performed on a 10 cm breast specimen. Results: The contrast-to-noise ratio improvements as compared to flat-panel detectors were 1.30 and 1.28 (projection based) and 1.35 and 1.25 (image based) for iodine over PMMA and hydroxylapatite over PMMA, respectively. Corresponding simulation values were 1.81 and 1.48 (projection based) and 1.85 and 1.48 (image based). Dose reductions using the CZT detector were 52.05% and 49.45% for iodine and hydroxyapatite imaging, respectively. Image-based weighting was also found to have the least beam

  20. Influence of CdCl{sub 2} activation treatment on ultra-thin Cd{sub 1−x}Zn{sub x}S/CdTe solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Clayton, A.J., E-mail: a.clayton@glyndwr.ac.uk [Centre for Solar Energy Research, Glyndŵr University, OpTIC, St. Asaph LL17 0JD (United Kingdom); Baker, M.A.; Babar, S. [Faculty of Engineering & Physical Sciences, University of Surrey, Guildford GU2 7XH (United Kingdom); Gibson, P.N. [Institute for Health & Consumer Protection, Joint Research Centre, 21020 Ispra, VA (Italy); Irvine, S.J.C.; Kartopu, G.; Lamb, D.A.; Barrioz, V. [Centre for Solar Energy Research, Glyndŵr University, OpTIC, St. Asaph LL17 0JD (United Kingdom)

    2015-09-01

    Ultra-thin CdTe photovoltaic solar cells with an absorber thickness of 0.5 μm were produced by metal organic chemical vapour deposition onto indium tin oxide coated boroaluminosilicate glass. A wide band gap Cd{sub 1−x}Zn{sub x}S alloy window layer was employed to improve spectral response in the blue region of the solar spectrum. X-ray photoelectron spectroscopy, X-ray diffraction and scanning electron microscopy were used to monitor changes in the chemical composition and microstructure of the Cd{sub 1−x}Zn{sub x}S/CdTe solar cell after varying the post-deposition CdCl{sub 2} activation treatment time and annealing temperature. The CdCl{sub 2} treatment leached Zn from the Cd{sub 1−x}Zn{sub x}S layer causing a redshift in the spectral response onset of window absorption. S diffusion occurred across the Cd{sub 1−x}Zn{sub x}S/CdTe interface, which was more pronounced as the CdCl{sub 2} treatment was increased. A CdTe{sub 1−y}S{sub y} alloy was formed at the interface, which thickened with CdCl{sub 2} treatment time. Small concentrations of S (up to 2 at.%) were observed throughout the CdTe layer as the degree of CdCl{sub 2} treatment was increased. Greater S diffusion across the Cd{sub 1−x}Zn{sub x}S/CdTe interface caused the device open-circuit voltage (V{sub oc}) to increase. The higher V{sub oc} is attributed to enhanced strain relaxation and associated reduction of defects in the interface region as well as the increase in CdTe grain size. - Highlights: • Increased CdCl{sub 2} activation treatment resulted in loss of Zn from Cd{sub 1−x}Zn{sub x}S. • Sulphur diffusion into CdTe was enhanced with greater CdCl{sub 2} activation treatment. • Improvement to V{sub oc} correlated with increased sulphur diffusion into CdTe.

  1. Study of the aqueous synthesis, optical and electrochemical characterization of alloyed Zn{sub x}Cd{sub 1-x}Te nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Matos, Charlene Regina Santos [Postgraduate Program in Materials Science and Engineering, Federal University of Sergipe, São Cristóvão, SE (Brazil); Candido, Luan P.M.; Souza, Helio Oliveira [Department of Chemistry, Federal University of Sergipe, São Cristóvão, SE (Brazil); Pereira da Costa, Luiz [Institute of Technology and Research (ITP), Tiradentes University, Aracaju, SE (Brazil); Sussuchi, Eliana Midori [Department of Chemistry, Federal University of Sergipe, São Cristóvão, SE (Brazil); Gimenez, Iara F., E-mail: gimenez@ufs.br [Postgraduate Program in Materials Science and Engineering, Federal University of Sergipe, São Cristóvão, SE (Brazil); Department of Chemistry, Federal University of Sergipe, São Cristóvão, SE (Brazil); Postgraduate Program in Chemistry, Federal University of Sergipe, São Cristóvão, SE (Brazil)

    2016-08-01

    The effects of experimental factors such as initial reaction pH, capping ligand, and heating method on the optical and electrochemical properties of aqueous alloyed Zn{sub x}Cd{sub 1-x}Te nanocrystals were evaluated. Here the type of capping ligand (glutathione GSH and 3-mercaptopropionic acid MPA) was found to be the most significant factor in controlling the range of photoluminescence emission. Also a pronounced pH effect on the emission wavelength has been verified in the presence of GSH, in contrast to MPA for which only a minor pH effect was observed. The heating method (microwave or hydrothermal) was found to be irrelevant for the emission wavelength at the conditions studied. The electrochemical characterization in aqueous medium (cyclic voltammetry and differential pulse voltammetry) evidenced a good correlation between electrochemical and optical band gap values and allowed estimation of band edge positions. - Highlights: • ZnCdTe quantum dots were obtained by aqueous synthesis. • Nature of capping ligand was the most relevant factor. • Optical and electrochemical band gaps were well correlated.

  2. Characterization of semi-insulating materials by photoinduced current transient spectroscopy: Fe doped INP for micro-optoelectronics and CdZnTe for nuclear detection

    International Nuclear Information System (INIS)

    Cherkaoui, K.

    1998-01-01

    The need of semi-insulating materials, of great quality, concerns various application domains. For instance, the very resistive substrates InP and CdZnTe are respectively adapted to the micro-optoelectronic circuits and to nuclear detectors. These two materials have been characterized by the thermal photoinduced current transient spectroscopy. The first part of this thesis is the defects analysis of annealing InP substrates, to understand the compensation process of this material. Two activation energy levels around 0,2 to 0,4 eV resulting from the thermal treatment have been detected. The iron omnipresence in the substrates, even undoped, has been noticed. It is then necessary to take into account the iron presence to understand the compensation process in these InP annealing substrates. the second part presents the study of the CdZnTe material, elaborated by the Bridgman method, to emphasize the defects leading to the decrease of the detector performances. The presence of three deep levels, near the forbidden band middle, is in relation with the detectors performances. (A.L.B.)

  3. The variation of the energy gap with composition in the quaternary alloy system ZnTe/sub 1-2x/S/sub x/Se/sub x/

    International Nuclear Information System (INIS)

    Litvinchuk, A.P.; Vitrikhovskii, N.I.

    1983-01-01

    Studies are presented of photoluminescence spectra of the quaternary ZnTe/sub 1-2x/S/sub x/Se/sub x/ alloy (x = 0.05, 0.10, and 0.20). The determination of the energy gap variation with composition at 85 K is given. The nonlinear variation of the energy gap E/sub g/ with composition for the quaternary ZnTe/sub 1-2x/S/sub x/Se/sub x/ alloy may be interpreted in the framework of the pseudopotential theory based on the nonlinear crystal field properties

  4. Theoretical optoelectronic analysis of intermediate-band photovoltaic material based on ZnY1−xOx (Y = S, Se, Te) semiconductors by first-principles calculations

    International Nuclear Information System (INIS)

    Wu Kong-Ping; Zhou Meng-Ran; Huang You-Rui; Gu Shu-Lin; Ye Jian-Dong; Zhu Shun-Ming; Zhang Rong; Zheng You-Dou; Tang Kun

    2013-01-01

    The structural, energetic, and electronic properties of lattice highly mismatched ZnY 1−x O x (Y = S, Se, Te) ternary alloys with dilute O concentrations are calculated from first principles within the density functional theory. We demonstrate the formation of an isolated intermediate electronic band structure through diluted O-substitute in zinc-blende ZnY (Y = S, Se, Te) at octahedral sites in a semiconductor by the calculations of density of states (DOS), leading to a significant absorption below the band gap of the parent semiconductor and an enhancement of the optical absorption in the whole energy range of the solar spectrum. It is found that the intermediate band states should be described as a result of the coupling between impurity O 2p states with the conduction band states. Moreover, the intermediate bands (IBs) in ZnTeO show high stabilization with the change of O concentration resulting from the largest electronegativity difference between O and Te compared with in the other ZnSO and ZnSeO. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  5. Optical spectra of Zn{sub 1-x}Be{sub x}Te mixed crystals determined by IR-VIS-UV ellipsometry and photoluminescence measurements

    Energy Technology Data Exchange (ETDEWEB)

    Wronkowska, A.A., E-mail: aleksandra.wronkowska@utp.edu.p [Institute of Mathematics and Physics, University of Technology and Life Sciences, S. Kaliskiego 7, PL-85796 Bydgoszcz (Poland); Arwin, H. [Department of Physics, Chemistry and Biology, Linkoeping University, SE-58183 Linkoeping (Sweden); Firszt, F.; Legowski, S. [Institute of Physics, Nicholas Copernicus University, Grudziadzka 5, PL-87100 Torun (Poland); Wronkowski, A.; Skowronski, L. [Institute of Mathematics and Physics, University of Technology and Life Sciences, S. Kaliskiego 7, PL-85796 Bydgoszcz (Poland)

    2011-02-28

    Spectroscopic ellipsometry in the photon energy range from 0.04 eV to 6.50 eV is used for investigation of the optical response of Zn{sub 1-x}Be{sub x}Te crystals grown by a high-pressure Bridgman method in the composition range x {<=} 0.12. Infrared spectra display absorption bands centred between 411 cm{sup -1} and 420 cm{sup -1} associated with BeTe-type optical phonon modes. The positions of the transverse-optical and longitudinal-optical phonon modes have been found by modelling the line shape of the complex dielectric functions, {epsilon}-tilde and Im(-{epsilon}-tilde{sup -1}), using a classical damped Lorentzian oscillator approach. Ellipsometric measurements in the VIS-UV range allow determination of the fundamental energy-gap (E{sub 0}) and the higher threshold energies (E{sub 1}, E{sub 1} + {Delta}{sub 1}, E{sub 2}) originating from the band edge and spin-orbit splitting critical points. We have found that the Be content x = 0.12 causes an increase of the fundamental energy gap about 0.15 eV at room temperature when compared to the E{sub 0} = 2.23 eV of ZnTe crystal at the same temperature. Photoluminescence spectra were measured in the temperature range from 30 K to room temperature. Luminescence at temperature T > 200 K is very weak. The peak positions of the exciton emission lines agree well with the E{sub 0} band-gaps derived from ellipsometric data if corrected for their temperature dependence.

  6. Vertical Bridgman growth and characterization of Cd0.95-xMnxZn0.05Te (x=0.20, 0.30) single-crystal ingots

    Energy Technology Data Exchange (ETDEWEB)

    Bolotnikov, A. [Brookhaven National Lab. (BNL), Upton, NY (United States); Kopach, V. [Brookhaven National Lab. (BNL), Upton, NY (United States); Kopach, O. [Brookhaven National Lab. (BNL), Upton, NY (United States); Shcherbak, L. [Brookhaven National Lab. (BNL), Upton, NY (United States); Fochuk, P. [Brookhaven National Lab. (BNL), Upton, NY (United States); Filonenko, S. [Brookhaven National Lab. (BNL), Upton, NY (United States); James, R. [Brookhaven National Lab. (BNL), Upton, NY (United States)

    2017-08-01

    Solid-liquid phase transitions in Cd0.95-xMnxZn0.05Te alloys with x = 0.20 and 0.30 were investigated by differential thermal analysis (DTA). The heating/cooling rates were 5 and 10 K/min with a melt dwell time of 10, 30 and 60 minutes. Cd0.95-xMnxZn0.05Te (x=0.20, 0.30) single-crystal ingots were grown by the vertical Bridgman method guided using the DTA results. Te inclusions (1-20 microns), typical for CdTe and Cd(Zn)Te crystals, were observed in the ingots by infrared transmission microscopy. The measured X-ray diffraction patterns showed that all compositions are found to be in a single phase. Using current-voltage (I-V) measurements, the resistivity of the samples from each ingot was estimated to be about 105 Ohm·cm. The optical transmission analysis demonstrated that the band-gap width of the investigated ingots increased from 1.77 to 1.88 eV with the increase of the MnTe content from 20 to 30 mol. %.

  7. Applicability of a portable CdTe and NaI (Tl) spectrometer for activity measure; Aplicabilidade de um espectrometro portatil de CdTe e NaI (Tl) para a medida da atividade de Cesio-137 ({sup 137}Cs) e Berilio-7 ({sup 7}Be)

    Energy Technology Data Exchange (ETDEWEB)

    Fernandes, Jaquiel Salvi

    2005-02-15

    In this work it was studied the application of an in situ gamma spectrometer (ROVER) of Amptek Inc., composed by a Cadmium Telluride detector (CdTe) of 3 mm x 3 mm x 1 mm and a 30 mm x 30 mm Sodium Iodide detector doped with Thallium [NaI (Tl)). The radioactive sources used were type pastille, sealed in aluminum and polyethylene, of {sup 241}Am, {sup 133}Ba, {sup 152}Eu, 3 sources of {sup 137}Cs and soil samples contaminated with {sup 137}Cs. It was performed a factorial planning 2{sup 3} to optimize the in situ spectrometry system. This way it was determined that the best temperature for CdTe crystal operation is -22, deg C, with Shaping Time of 3 {mu}S and Rise Time Discrimination (RTD) with value 3. With the help of the certified radioactive sources, we determined the efficiency curve of the two detectors. The CdTe detector was positioned at the standard distance of 1 meter of the sources and also at 4.15 cm. The NaI (Tl) detector was also positioned at the standard distance of 1 meter of the sources and at 2.8 cm. Measures were performed to determine the Minimum Detectable Activity (MDA) for both detectors. For the pastille type sources, the {sup 137}Cs MDA for the CdTe detector at 4.15 cm, analyzing the energy line of 32 keV, was 6 kBq and at 1 meter of the {sup 137}Cs source, analyzing the line of 661.65 keV, the MDA was 67 kBq. For soil samples, CdTe detector at 4.15 cm presented a MDA of 693 kBq.kg-l for the line of 32 keV, and for the soil sample {sup 7}Be content the MDA found was 2867 Bq.kg{sup -1} at 4.15 cm. For the NaI (Tl) detector, analyzing the line of 661.65 keV, the {sup 137}Cs MDA for pastille type source at 1 meter of distance was 7 kBq, and for soil sample at 2.8 cm the measured {sup 137}Cs MDA was 71 Bq.kg{sup -1}. For the soil sample {sup 7}Be content, at 2.8 cm of the Nal (Tl) detector, the obtained MDA was 91 Bq.kg{sup -1}. Due to the minimum detectable activities found for the two detectors, we concluded that the employed in situ gamma

  8. Effect of the cadmium chloride treatment on RF sputtered Cd{sub 0.6}Zn{sub 0.4}Te films for application in multijunction solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Shimpi, Tushar M., E-mail: mechanical.tushar@gmail.com; Kephart, Jason M.; Swanson, Drew E.; Munshi, Amit H.; Sampath, Walajabad S. [Department of Mechanical Engineering, Colorado State University, 1320 Campus Delivery, Fort Collins, Colorado 80523 (United States); Abbas, A.; Walls, John M. [CREST (Centre for Renewable Energy Systems and Technology), Loughborough University, Loughborough LE11 3TU (United Kingdom)

    2016-09-15

    Single phase Cd{sub 0.6}Zn{sub 0.4}Te (CdZnTe) films of 1 μm thickness were deposited by radio frequency planar magnetron sputter deposition on commercial soda lime glass samples coated with fluorine-doped tin oxide and cadmium sulphide (CdS). The stack was then treated with cadmium chloride (CdCl{sub 2}) at different temperatures using a constant treatment time. The effect of the CdCl{sub 2} treatment was studied using optical, materials, and electrical characterization of the samples and compared with the as-deposited CdZnTe film with the same stack configuration. The band gap deduced from Tauc plots on the as-deposited CdZnTe thin film was 1.72 eV. The deposited film had good crystalline quality with a preferred orientation along the {111} plane. After the CdCl{sub 2} treatment, the absorption edge shifted toward longer wavelength region and new peaks corresponding to cadmium telluride (CdTe) emerged in the x-ray diffraction pattern. This suggested loss of zinc after the CdCl{sub 2} treatment. The cross sectional transmission electron microscope images of the sample treated at 400 °C and the energy dispersive elemental maps revealed the absence of chlorine along the grain boundaries of CdZnTe and residual CdTe. The presence of chlorine in the CdTe devices plays a vital role in drastically improving the device performance which was not observed in CdZnTe samples treated with CdCl{sub 2}. The loss of zinc from the surface and incomplete recrystallization of the grains together with the presence of high densities of stacking faults were observed. The surface images using scanning electron microscopy showed that the morphology of the grains changed from small spherical shape to large grains formed due to the fusion of small grains with distinct grain boundaries visible at the higher CdCl{sub 2} treatment temperatures. The absence of chlorine along the grain boundaries, incomplete recrystallization and distinct grain boundaries is understood to cause the poor

  9. Raman spectroscopy, thermal and optical properties of TeO2-ZnO-Nb2O5-Nd2O3 glasses.

    Science.gov (United States)

    Kamalaker, V; Upender, G; Ramesh, Ch; Mouli, V Chandra

    2012-04-01

    The glasses with composition 75TeO2-10ZnO-(15-x)Nb2O5-xNd2O3 (0≤x≤9 mol%) were prepared using melt quenching method and their physical properties such as density (ρ), molar volume (VM), average crosslink density (nc¯), oxygen packing density (OPD) and number of bonds per unit volume (nb) were determined. Raman spectroscopic studies showed that the glass network consists of TeO4, TeO3+1, TeO3 and NbO6 units as basic structural units. The glass transition temperature (Tg), crystallization onset (To) and thermal stability (ΔT) were determined from DSC thermograms. The Raman and DSC results were found to be correlated with the physical properties. In the optical absorption spectra six absorption bands were observed with different relative intensities at around 464, 522, 576, 742, 801 and 871 nm which are assigned to the transition of electrons from (ground state) 4I9/2→G11/2; 4I9/2→2K3/2, 2G7/2; 4I9/2→4G5/2, 4G7/2; 4I9/2→4S3/2; 4F7/2→2H9/2, 4F5/2 and 4I9/2→2F3/2 respectively. From optical absorption data the energy band gap (Eopt) and Urbach energy (ΔE) were calculated. Copyright © 2012 Elsevier B.V. All rights reserved.

  10. Facile fabrication of core–shell ZnO/Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} nanorods: Enhanced photoluminescence through electron charge

    Energy Technology Data Exchange (ETDEWEB)

    Shen, Shengfei; Gao, Hongli [School of Materials Science & Engineering, Beihang University, Beijing 100191 (China); Deng, Yuan, E-mail: dengyuan@buaa.edu.cn [School of Materials Science & Engineering, Beihang University, Beijing 100191 (China); Wang, Yao [School of Materials Science & Engineering, Beihang University, Beijing 100191 (China); Qu, Shengchun, E-mail: qsc@semi.ac.cn [Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

    2016-01-15

    Graphical abstract: - Highlights: • The Bi{sub 0.5}Sb{sub 1.5}Te{sub 3}/ZnO core–shells prepared by combining a facile hydrothermal growth and magnetron sputtering approach. • The light absorption and photoluminescence emission of the ZnO and the Bi{sub 0.5}Sb{sub 1.5}Te{sub 3}/ZnO core–shells are investigated. • The core–shell structure reveals a simultaneous novelty enhancement of the photoluminescence emission in the UV and visible range. • The mechanism for the PL simultaneous enhancement is described. - Abstract: Surface decoration techniques are emerging as promising strategy to improve the optical properties of the ZnO based materials. The core–shell ZnO/Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} nanorods were grown on a FTO substrate through a facile hydrothermal and magnetron sputtering combined approach. The microstructure of the core–shell nanorod arrays were investigated by the X-ray diffraction (XRD), a field emission Scanning electron microscopy (SEM) and high resolution transmission electron microscope (HTEM). The optical properties of the core–shell nanorod arrays were investigated through the diffuse reflectance absorption spectra and photoluminescence emission. The visible light absorption and especially the photoluminescence emission of the ZnO nanorods are enhanced markedly with the Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} grains coating the ZnO nanorods through the electron charge.

  11. Studies of crystalline CdZnTe radiation detectors and polycrystalline thin film CdTe for X-ray imaging applications

    International Nuclear Information System (INIS)

    Ede, Anthony

    2001-01-01

    The development of a replacement to the conventional film based X-ray imaging technique is required for many reasons. One possible route for this is the use of a large area film of a suitable semiconductor overlaid on an amorphous silicon readout array. A suitable semiconductor exists in cadmium telluride and its tertiary alloy cadmium zinc telluride. In this thesis the spectroscopic characteristics of commercially available CZT X- and γ-radiation detectors are established. The electronic, optical, electro-optic, structural and compositional properties of these detectors are then investigated. The attained data is used to infer a greater understanding for the carrier transport in a CZT radiation detector following the interaction of a high energy photon. Following this a method used to fabricate large area films of CdTe on a commercial scale is described. This is cathodic electrodeposition from an aqueous electrolyte. The theory and experimental arrangement for this technique are described in detail with preliminary results from the fabricated films presented. Attention is then turned to the CdS/CdTe films that are produced commercially for the photovoltaic industry. In this case the crystalline nature, surface topography and optical properties are investigated. A conclusion examines the progress that has been made towards the development of a large area fiat panel digital imaging technique. (author)

  12. Studies on solid solutions based on layered honeycomb-ordered phases P2-Na{sub 2}M{sub 2}TeO{sub 6} (M=Co, Ni, Zn)

    Energy Technology Data Exchange (ETDEWEB)

    Berthelot, Romain; Schmidt, Whitney; Sleight, A.W. [Department of Chemistry, Oregon State University, Corvallis, OR 97331 (United States); Subramanian, M.A., E-mail: mas.subramanian@oregonstate.edu [Department of Chemistry, Oregon State University, Corvallis, OR 97331 (United States)

    2012-12-15

    Three complete solid solutions between the layered phases P2-Na{sub 2}M{sub 2}TeO{sub 6} (M=Co, Ni, Zn) have been prepared by conventional solid state method and investigated through X-ray diffraction, magnetism and optical measurements. All compositions are characterized by a M{sup 2+}/X{sup 6+} honeycomb ordering within the slabs and crystallize in a hexagonal unit cell. However, a structural transition based on a different stacking is observed as nickel (space group P6{sub 3}/mcm) is substituted by zinc or cobalt (space group P6{sub 3}22). All compositions exhibit a paramagnetic Curie-Weiss behavior at high temperatures; and the magnetic moment values confirm the presence of Ni{sup 2+} and/or Co{sup 2+} cations. The low-temperature antiferromagnetic order of Na{sub 2}Ni{sub 2}TeO{sub 6} and Na{sub 2}Co{sub 2}TeO{sub 6} is suppressed by zinc substitution. The color of the obtained compositions varies from pink, to light green and white when M=Co, Ni, Zn, respectively. - Graphical abstract: The comparison between the structure of Na{sub 2}Ni{sub 2}TeO{sub 6} (left) and Na{sub 2}M{sub 2}TeO{sub 6} (M=Co, Zn) (right) evidences the stacking difference with distinct atom sequences along the hexagonal c-axis. Highlights: Black-Right-Pointing-Pointer Solid solutions between lamellar phases Na{sub 2}M{sub 2}TeO{sub 6} (M=Co, Ni, Zn) are investigated. Black-Right-Pointing-Pointer A M{sup 2+}/X{sup 6+} honeycomb ordering characterized all the compositions. Black-Right-Pointing-Pointer A structural transition is shown when Ni is replaced by Co or Zn. Black-Right-Pointing-Pointer The low-temperature AFM ordering of Na{sub 2}Ni{sub 2}TeO{sub 6} and Na{sub 2}Co{sub 2}TeO{sub 6} is suppressed by zinc substitution. Black-Right-Pointing-Pointer Color changes from pink to light green and white when M=Co, Ni, Zn, respectively.

  13. Raman and infrared spectroscopic investigations of a ferroelastic phase transition in B a2ZnTe O6 double perovskite

    Science.gov (United States)

    Moreira, Roberto L.; Lobo, Ricardo P. S. M.; Ramos, Sérgio L. L. M.; Sebastian, Mailadil T.; Matinaga, Franklin M.; Righi, Ariete; Dias, Anderson

    2018-05-01

    The low-temperature vibrational properties of B a2ZnTe O6 double-perovskite ceramics obtained by the solid-state route were investigated by Raman scattering and Fourier-transform infrared reflectivity. We found that this material undergoes a reversible ferroelastic phase transition at around 140 K, well compatible with a recently proposed rhombohedral-to-monoclinic structural change that would occur below 165 K. Complementary calorimetric measurements showed that the phase transition has a first-order character, with an entropy jump compatible with a displacive mechanism. The vibrational spectra show clearly the splitting of the doubly degenerate E modes into nondegenerate representations of the low-symmetry phase. In particular, the lowest-frequency Raman mode presents soft-mode behavior and splits below the critical temperature, confirming the in-plane ferroelastic deformation in the low-temperature phase.

  14. Material-specific imaging system using energy-dispersive X-ray diffraction and spatially resolved CdZnTe detectors with potential application in breast imaging

    Energy Technology Data Exchange (ETDEWEB)

    Barbes, Damien, E-mail: damien.barbes@cea.fr [Univ. Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Tabary, Joachim, E-mail: joachim.tabary@cea.fr [Univ. Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Paulus, Caroline, E-mail: caroline.paulus@cea.fr [Univ. Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Hazemann, Jean-Louis, E-mail: jean-louis.hazemann@neel.cnrs.fr [Univ.Grenoble Alpes, Inst NEEL, F-38042 Grenoble (France); CNRS, Inst NEEL, F-38042 Grenoble (France); Verger, Loïck, E-mail: loick.verger@cea.fr [Univ. Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France)

    2017-03-11

    This paper presents a coherent X-ray-scattering imaging technique using a multipixel energy-dispersive system. Without any translation, the technique produces specific 1D image from data recorded by a single CdZnTe detector pixel using subpixelation techniques. The method is described in detail, illustrated by a simulation and then experimentally validated. As the main considered application of our study is breast imaging, this validation involves 2D imaging of a phantom made of plastics mimicking breast tissues. The results obtained show that our system can specifically image the phantom using a single detector pixel. For the moment, in vivo breast imaging applications remain difficult, as the dose delivered by the system is too high, but some adjustments are considered for further work.

  15. Ground calibration of the spatial response and quantum efficiency of the CdZnTe hard x-ray detectors for NuSTAR

    Science.gov (United States)

    Grefenstette, Brian W.; Bhalerao, Varun; Cook, W. Rick; Harrison, Fiona A.; Kitaguchi, Takao; Madsen, Kristin K.; Mao, Peter H.; Miyasaka, Hiromasa; Rana, Vikram

    2017-08-01

    Pixelated Cadmium Zinc Telluride (CdZnTe) detectors are currently flying on the Nuclear Spectroscopic Telescope ARray (NuSTAR) NASA Astrophysics Small Explorer. While the pixel pitch of the detectors is ≍ 605 μm, we can leverage the detector readout architecture to determine the interaction location of an individual photon to much higher spatial accuracy. The sub-pixel spatial location allows us to finely oversample the point spread function of the optics and reduces imaging artifacts due to pixelation. In this paper we demonstrate how the sub-pixel information is obtained, how the detectors were calibrated, and provide ground verification of the quantum efficiency of our Monte Carlo model of the detector response.

  16. Prediction of electronic and optical properties of ZnAl2Te4 defect chalcopyrite semiconductor: an ab-initio study

    Science.gov (United States)

    Mayengbam, Rishikanta; Tripathy, S. K.; Pandey, B. P.

    2018-03-01

    In this paper, we have investigated the structural, electronic and optical properties of ZnAl2Te4 defect chalcopyrite semiconductor using generalized gradient approximation (GGA) within density functional theory (DFT). We have calculated the optimized lattice constants (a and c) and compared with the available experimental values. The optimized lattice constants have been used to calculate the energy band gap and found to be 1.57 eV. The partial density of states and total density of states have been discussed in detail. The frequency dependent dielectric constant and refractive index have been calculated and plotted in the energy range 0-13 eV. All the above parameters have been compared with the available experimental and theoretical values and found good agreement between them.

  17. Ab-initio investigations for opto-electronic response of (Cd, Zn)Ga2Te4: Promising solar PV materials

    Science.gov (United States)

    Sahariya, Jagrati; Soni, Amit; Kumar, Pancham

    2018-04-01

    In this paper, the first principle calculations are performed to analyze the structural, electronic and optical behavior of promising solar materials (Cd,Zn)Ga2Te4. To perform these calculations we have used one of the most accurate Full Potential Linearized Augmented Plane Wave (FP-LAPW) method. The ground state properties of these compounds are confirmed over here after proper examination of energy and charge convergence using Perdew-Burke-Ernzerhof (PBE-sol) exchange correlation potential. The investigations performed such as energy band structure, Density of States (DOS), optical parameters like complex dielectric function and absorption co-efficient are discussed over here to understand the overall response of the chosen system.

  18. Measurement of 235U Enrichment Using the Semi-Peak-Ratio Technique with CdZnTe Gamma-Ray Detector

    International Nuclear Information System (INIS)

    Ha, J. H.; Ko, W. I.; Lee, S. Y.; Song, D. Y.; Kim, H. D.; Yang, M. S.

    2001-01-01

    In uranium enrichment plants and nuclear fuel fabrication facilities, exact measurement of fissile isotope enrichment of Uranium is required for material accounting in international safeguards inspection as well as process quality control. The purpose of this study was to develop a simple measurement system which can portably be used at nuclear fuel fabrication plants especially dealing with low enriched uranium. For this purpose, a small size CZT (CdZnTe) detector was used, and the detector performance in low uranium gamma/X-rays energy range was investigated by use of various enriched uranium oxide samples. New enrichment measurement technique and analysis method for low enriched uranium oxide, so-called, 'semi-peak ratio technique' was developed. The newly developed method was considered as an alternative technique for the low enrichment and would be useful to account nuclear material in safeguarding activity at nuclear fuel fabrication facility

  19. Linearity enhancement design of a 16-channel low-noise front-end readout ASIC for CdZnTe detectors

    International Nuclear Information System (INIS)

    Zeng, Huiming; Wei, Tingcun; Wang, Jia

    2017-01-01

    A 16-channel front-end readout application-specific integrated circuit (ASIC) with linearity enhancement design for cadmium zinc telluride (CdZnTe) detectors is presented in this paper. The resistors in the slow shaper are realized using a high-Z circuit to obtain constant resistance value instead of using only a metal–oxide–semiconductor (MOS) transistor, thus the shaping time of the slow shaper can be kept constant for different amounts of input energies. As a result, the linearity of conversion gain is improved significantly. The ASIC was designed and fabricated in a 0.35 µm CMOS process with a die size of 2.60 mm×3.53 mm. The tested results show that a typical channel provides an equivalent noise charge (ENC) of 109.7e − +16.3e − /pF with a power consumption of 4 mW and achieves a conversion gain of 87 mV/fC with a nonlinearity of <0.4%. The linearity of conversion gain is improved by at least 86.6% as compared with the traditional approaches using the same front-end readout architecture and manufacture process. Moreover, the inconsistency among channels is <0.3%. An energy resolution of 2.975 keV (FWHM) for gamma rays of 59.5 keV was measured by connecting the ASIC to a 5 mm×5 mm ×2 mm CdZnTe detector at room temperature. The front-end readout ASIC presented in this paper achieves an outstanding linearity performance without compromising the noise, power consumption, and chip size performances.

  20. Linearity enhancement design of a 16-channel low-noise front-end readout ASIC for CdZnTe detectors

    Energy Technology Data Exchange (ETDEWEB)

    Zeng, Huiming; Wei, Tingcun, E-mail: weitc@nwpu.edu.cn; Wang, Jia

    2017-03-01

    A 16-channel front-end readout application-specific integrated circuit (ASIC) with linearity enhancement design for cadmium zinc telluride (CdZnTe) detectors is presented in this paper. The resistors in the slow shaper are realized using a high-Z circuit to obtain constant resistance value instead of using only a metal–oxide–semiconductor (MOS) transistor, thus the shaping time of the slow shaper can be kept constant for different amounts of input energies. As a result, the linearity of conversion gain is improved significantly. The ASIC was designed and fabricated in a 0.35 µm CMOS process with a die size of 2.60 mm×3.53 mm. The tested results show that a typical channel provides an equivalent noise charge (ENC) of 109.7e{sup −}+16.3e{sup −}/pF with a power consumption of 4 mW and achieves a conversion gain of 87 mV/fC with a nonlinearity of <0.4%. The linearity of conversion gain is improved by at least 86.6% as compared with the traditional approaches using the same front-end readout architecture and manufacture process. Moreover, the inconsistency among channels is <0.3%. An energy resolution of 2.975 keV (FWHM) for gamma rays of 59.5 keV was measured by connecting the ASIC to a 5 mm×5 mm ×2 mm CdZnTe detector at room temperature. The front-end readout ASIC presented in this paper achieves an outstanding linearity performance without compromising the noise, power consumption, and chip size performances.

  1. A P2-Type Layered Superionic Conductor Ga-Doped Na2 Zn2 TeO6 for All-Solid-State Sodium-Ion Batteries.

    Science.gov (United States)

    Li, Yuyu; Deng, Zhi; Peng, Jian; Chen, Enyi; Yu, Yao; Li, Xiang; Luo, Jiahuan; Huang, Yangyang; Zhu, Jinlong; Fang, Chun; Li, Qing; Han, Jiantao; Huang, Yunhui

    2018-01-24

    Here, a P2-type layered Na 2 Zn 2 TeO 6 (NZTO) is reported with a high Na + ion conductivity ≈0.6×10 -3  S cm -1 at room temperature (RT), which is comparable to the currently best Na 1+n Zr 2 Si n P 3-n O 12 NASICON structure. As small amounts of Ga 3+ substitutes for Zn 2+ , more Na + vacancies are introduced in the interlayer gaps, which greatly reduces strong Na + -Na + coulomb interactions. Ga-substituted NZTO exhibits a superionic conductivity of ≈1.1×10 -3  S cm -1 at RT, and excellent phase and electrochemical stability. All solid-state batteries have been successfully assembled with a capacity of ≈70 mAh g -1 over 10 cycles with a rate of 0.2 C at 80 °C. 23 Na nuclear magnetic resonance (NMR) studies on powder samples show intra-grain (bulk) diffusion coefficients D NMR on the order of 12.35×10 -12  m 2  s -1 at 65 °C that corresponds to a conductivity σ NMR of 8.16×10 -3  S cm -1 , assuming the Nernst-Einstein equation, which thus suggests a new perspective of fast Na + ion conductor for advanced sodium ion batteries. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  2. Photoluminescence of double core/shell infrared (CdSeTe)/ZnS quantum dots conjugated to Pseudo rabies virus antibodies

    Science.gov (United States)

    Torchynska, T. V.; Casas Espinola, J. L.; Jaramillo Gómez, J. A.; Douda, J.; Gazarian, K.

    2013-06-01

    Double core CdSeTe/ZnS quantum dots (QDs) with emission at 800 nm (1.60 eV) have been studied by photoluminescence (PL) and Raman scattering methods in the non-conjugated state and after the conjugation to the Pseudo rabies virus (PRV) antibodies. The transformation of PL spectra, stimulated by the electric charge of antibodies, has been detected for the bioconjugated QDs. Raman scattering spectra are investigated with the aim to reveal the CdSeTe core compositions. The double core QD energy diagrams were designed that help to analyze the PL spectra and their transformation at the bioconjugation. It is revealed that the interface in double core QDs has the type II quantum well character that permits to explain the near IR optical transition (1.60 eV) in the double core QDs. It is shown that the essential transformation of PL spectra is useful for the study of QD bioconjugation with specific antibodies and can be a powerful technique in early medical diagnostics.

  3. Foliar contamination of Phaseolus vulgaris with aerosols of {sup 137}Cs, {sup 85}Sr, {sup 133}Ba and {sup 123m}Te: influence of plant development stage upon contamination and rain

    Energy Technology Data Exchange (ETDEWEB)

    Madoz-Escande, C. E-mail: chantal.madoz-escande@irsn.fr; Henner, P.; Bonhomme, T

    2004-07-01

    As part of a requirement to improve the assessment of the impact of radioactive fallout on consumed agricultural products, bean plants at four development stages (seedlings, preflowering, late flowering and mature plants) were contaminated by dry deposition of {sup 137}Cs, {sup 85}Sr, {sup 133}Ba and {sup 123m}Te aerosols. The influence of two rain scenarios and of the development stage upon contamination on interception, retention, and translocation to pods was studied. Interception of the four radionuclides was almost identical and varied from 30 to 60% with increasing development stage. The most important rain parameter was the time which elapsed between contamination and the first rain. Whatever the development stage, rain washed off more cesium from the leaves when it occurred 2 days after the deposit (37% at the seedling stage, for example) rather than later on (6 days, 27%), due to rapid migration of Cs in the plant. The first rain washed off nearly 40% of Ba whatever the scenario. For later stages, Sr and Ba were more washed off by heavy weekly rains than by weak twice-a-week rains, perhaps because of the Sr/Ba-contaminated material loss associated with wash off (desquamation of cuticles). Te showed little wash off (less than 5%). Wash off decreased with an older development stage for a weak rain intensity, due to the superimposition of leaves. Heavy rains removed this shelter effect. At harvest, rain effect was no longer detectable as foliar activity was similar for both rain scenarios. Translocation factors (TF) for strontium and barium increased from 6x10{sup -3} to 1x10{sup -1} with the plant development stage upon contamination, whereas those for cesium remained almost unchanged between 2x10{sup -1} and 4 x 10{sup -1}. Flowering is the most critical stage towards residual contamination in pods at harvest, with the exception of direct deposit on pods at the mature stage (TF values are one order of magnitude higher). TF value for Te was 6.5x10{sup -2

  4. Synergistic solvent extraction investigation of Am (III), Eu (III), Zn(II), and Cs(I), using 2-heptyl-2-methyl-nonanoic acid mixed with different organophosphorus compounds from nitrate media. Vol. 3

    International Nuclear Information System (INIS)

    El-Naggar, H.A.; Ramadan, A.; Abdel-Fattah, A.

    1996-01-01

    Extraction studies for investigating the effect of mixing 2-heptyl-2-methyl nonanoic acid (HA) with a number of organophosphorus compounds; namely tributyl phosphate (TBP), terphenyl phosphate oxide (TPPO); tri octyl phosphine oxide (TOPO) or bis-2-(ethyl hexyl) phosphoric acid (HDEHP) in benzene on the extraction of trace elements Am(III), Eu(III), Zn(II), and Cs(I) from nitrate media of ionic strength, I=0.1 M were carried out. The effect of adding different organophosphorus compounds to HA was tested to account for the presence or absence of the phenomenon of synergism. It was found that TBP, TPPO, and TOPO causing some antagonistic effects for the elements studied. Extraction enhancement was only observed with bis- (2-ethyl-hexyl) -phosphoric acid (HDEHP) for all the elements investigated. The extraction mechanisms as well as the thermodynamic parameters for the mixed extracted species are discussed. 19 figs

  5. Synergistic solvent extraction investigation of Am (III), Eu (III), Zn(II), and Cs(I), using 2-heptyl-2-methyl-nonanoic acid mixed with different organophosphorus compounds from nitrate media. Vol. 3

    Energy Technology Data Exchange (ETDEWEB)

    El-Naggar, H A; Ramadan, A; Abdel-Fattah, A [Nuclear Chemistry Department, Hot Laboratories Center, Atomic Energy Authority, Cairo (Egypt)

    1996-03-01

    Extraction studies for investigating the effect of mixing 2-heptyl-2-methyl nonanoic acid (HA) with a number of organophosphorus compounds; namely tributyl phosphate (TBP), terphenyl phosphate oxide (TPPO); tri octyl phosphine oxide (TOPO) or bis-2-(ethyl hexyl) phosphoric acid (HDEHP) in benzene on the extraction of trace elements Am(III), Eu(III), Zn(II), and Cs(I) from nitrate media of ionic strength, I=0.1 M were carried out. The effect of adding different organophosphorus compounds to HA was tested to account for the presence or absence of the phenomenon of synergism. It was found that TBP, TPPO, and TOPO causing some antagonistic effects for the elements studied. Extraction enhancement was only observed with bis- (2-ethyl-hexyl) -phosphoric acid (HDEHP) for all the elements investigated. The extraction mechanisms as well as the thermodynamic parameters for the mixed extracted species are discussed. 19 figs.

  6. Study and development of new CdTe and CdZnTe detection structures for X and {gamma} imagery; Etude et realisation de nouvelles structures de detection a base de CdTe et CdZnTe pour l`imagerie X et {gamma}

    Energy Technology Data Exchange (ETDEWEB)

    Rosaz, M

    1997-10-24

    The aim of this study is to show the interest of applying cadmium telluride (CdTe) for X- and {gamma}- ray imaging applications, with specific technological (via contact nature) and geometric (via Frisch grids) structures suited for each application. This work is divided into three different but complementary parts: the first part describes a simulation model which allows a better understanding of CdTe based {gamma}- ray detectors. The new feature of this model compared to previous ones, is that it is able to take into account the electric field`s non uniform spatial distribution inside the detector s. The results enable us to de-convolute the influence of material and contact parameters on the spectrometric performances (energy resolution and peak/valley ratio) of CdTe based detectors; the second part presents different technological structures deposited upon CdTe, (grown by two different methods, i.e Bridgman and High Pressure Bridgman). These structures were characterised in X- and {gamma}- ray detection; theoretical models are developed which allow a certain insight into the detection properties of each couple (material + contact); the third part deals with new contact geometries which allow a screening effect of the bulk (analogous to the Frisch grid effect in gaseous detectors) resulting in improved energy resolution and peak/valley ratios; encouraging first results on prototypes are presented and discussed. This work has allowed a better understanding of physical behaviour of CdTe based detectors, coupled with advances in technological issues to upgrade the overall performances of these detectors for application in X- and {gamma}- ray imaging. (author) 93 refs.

  7. Studies on the deep-level defects in CdZnTe crystals grown by travelling heater method

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, Boru; Jie, Wanqi; Wang, Tao; Xu, Lingyan; Yang, Fan; Yin, Liying; Fu, Xu [State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi' an (China); Key Laboratory of Radiation Detection Materials and Devices, Ministry of Industry and Information Technology, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi' an, Shaanxi (China); Nan, Ruihua [State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi' an (China); Shaanxi Key Laboratory of Optoelectronic Functional Materials and Devices, School of Materials and Chemical Engineering, Xi' an Technological University, Xi' an (China)

    2017-05-15

    The variation of deep level defects along the axis of CZT:In ingots grown by Travelling Heater Method was investigated by the means of thermally stimulated current (TSC) spectra. Models for the reaction among different defects In, Te{sub i}, and V{sub Cd} were used to analyze the variation of deep level defects along the growth direction. It was found that the density of In dopant-related defects is lower in the tip, but those of Te antisites and Te interstitials are higher in the tip. The density of cadmium vacancy exhibits an initial increase followed by a decrease from the tip to tail of the ingot. In PL spectra, the intensities of (D{sub 0}, X), (DAP) and D{sub complex} peaks obviously increase from the tip to the tail, due to the increase of the density of In dopant-related defects (IN{sup +}{sub CD}), Cd vacancies, and impurities. The low concentration of net free holes was found by Hall measurements, and high resistivity with p-type conduction was demonstrated from I-V analysis. The mobility for electrons was found to increase significantly from 634 ± 26 cm{sup 2} V{sup -1} s{sup -1} in the tip to 860 ± 10 cm{sup 2} V{sup -1} s{sup -1} in the tail, due to the decrease of the deep level defect densities. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  8. Performance simulation of an x-ray detector for spectral CT with combined Si and Cd[Zn]Te detection layers.

    Science.gov (United States)

    Herrmann, Christoph; Engel, Klaus-Jürgen; Wiegert, Jens

    2010-12-21

    The most obvious problem in obtaining spectral information with energy-resolving photon counting detectors in clinical computed tomography (CT) is the huge x-ray flux present in conventional CT systems. At high tube voltages (e.g. 140 kVp), despite the beam shaper, this flux can be close to 10⁹ Mcps mm⁻² in the direct beam or in regions behind the object, which are close to the direct beam. Without accepting the drawbacks of truncated reconstruction, i.e. estimating missing direct-beam projection data, a photon-counting energy-resolving detector has to be able to deal with such high count rates. Sub-structuring pixels into sub-pixels is not enough to reduce the count rate per pixel to values that today's direct converting Cd[Zn]Te material can cope with (≤ 10 Mcps in an optimistic view). Below 300 µm pixel pitch, x-ray cross-talk (Compton scatter and K-escape) and the effect of charge diffusion between pixels are problematic. By organising the detector in several different layers, the count rate can be further reduced. However this alone does not limit the count rates to the required level, since the high stopping power of the material becomes a disadvantage in the layered approach: a simple absorption calculation for 300 µm pixel pitch shows that the required layer thickness of below 10 Mcps/pixel for the top layers in the direct beam is significantly below 100 µm. In a horizontal multi-layer detector, such thin layers are very difficult to manufacture due to the brittleness of Cd[Zn]Te. In a vertical configuration (also called edge-on illumination (Ludqvist et al 2001 IEEE Trans. Nucl. Sci. 48 1530-6, Roessl et al 2008 IEEE NSS-MIC-RTSD 2008, Conf. Rec. Talk NM2-3)), bonding of the readout electronics (with pixel pitches below 100 µm) is not straightforward although it has already been done successfully (Pellegrini et al 2004 IEEE NSS MIC 2004 pp 2104-9). Obviously, for the top detector layers, materials with lower stopping power would be advantageous

  9. Nd3+-doped TeO2-Bi2O3-ZnO transparent glass ceramics for laser application at 1.06 μm

    Science.gov (United States)

    Hu, Xiaolin; Luo, Zhiwei; Liu, Taoyong; Lu, Anxian

    2017-04-01

    The high crystallinity transparent glass ceramics based on Nd3+-doped 70TeO2-15Bi2O3-15ZnO (TBZ) compositions were successfully prepared by two-step heat treatment process. The effects of Nd2O3 content on the thermal, structural, mechanical, and optical properties of TBZ glass ceramics were studied. The incorporation of Nd2O3 enhanced the crystallization tendency in the matrix glass composition. The crystal phase and morphology of Bi2Te4O11 in the glass ceramics were confirmed by X-ray diffraction and field emission scanning electron microscopy. Due to precipitate more crystal phase, the hardness values increased from 3.21 to 3.66 GPa. Eight absorption peaks were observed from 400 to 900 nm and three emission bands appeared in the range of 850-1400 nm. With the increasing of Nd2O3 content from 0.5 to 2.5 wt%, the intensity of absorption peaks enhanced and the emission intensity increased up to 1.0 wt% and then fell down for further dopant concentration. The fluorescence decay lifetime decreased rapidly starting from 1.5 wt% Nd2O3 content due to the obvious energy migration among Nd3+. According to the extreme strong emission band around 1062 nm and the optimum Nd2O3 content (1.0 wt%), N10 glass ceramic was considered as a potential material for 1.06 μm laser applications.

  10. Solar cells based on electrodeposited thin films of ZnS, CdS, CdSSe and CdTe

    Science.gov (United States)

    Weerasinghe, Ajith R.

    The motivations of this research were to produce increased efficiency and low-cost solar cells. The production efficiency of Si solar cells has almost reached their theoretical limit, and reducing the manufacturing cost of Si solar cells is difficult to achieve due to the high-energy usage in material purifying and processing stages. Due to the low usage of materials and input energy, thin film solar cells have the potential to reduce the costs. CdS/CdTe thin film solar cells are already the cheapest on $/W basis. The cost of CdTe solar cells can be further reduced if all the semiconducting layers are fabricated using the electrodeposition (ED) method. ED method is scalable, low in the usage of energy and raw materials. These benefits lead to the cost effective production of semiconductors. The conventional method of fabricating CdS layers produces Cd containing waste solutions routinely, which adds to the cost of solar cells.ZnS, CdS and CdS(i-X)Sex buffer and window layers and CdTe absorber layers have been successfully electrodeposited and explored under this research investigation. These layers were fully characterised using complementary techniques to evaluate the material properties. Photoelectrochemical (PEC) studies, optical absorption, X-ray diffraction (XRD), X-ray fluorescence (XRF), scanning electron microscopy (SEM), energy-dispersive X-ray (EDX) spectroscopy, atomic force microscopy (AFM) and Raman spectroscopy were utilised to evaluate the material properties of these solid thin film layers. ZnS and CdS thin film layers were electrodeposited from Na-free chemical precursors to avoid the group I element (Na) to reduce deterioration of CdTe devices. Deposition parameters such as, growth substrates, temperature, pH, growth cathodic voltage, stirring rate, time and chemical concentrations were identified to fabricate the above semiconductors. To further optimise these layers, a heat treatment process specific to the material was developed. In addition

  11. Paramagnetic behavior at room temperature of Zn{sub 1−x}Mn{sub x}Te nanocrystals grown in a phosphate glass matrix by the fusion method

    Energy Technology Data Exchange (ETDEWEB)

    Silva, Alessandra S., E-mail: alessandra@mestrado.ufu.br [Universidade Federal de Uberlândia, Instituto de Física, Laboratório de Novos Materiais Isolantes e Semicondutores (LNMIS), Uberlândia CEP: 38400-902 (Brazil); Franco, Adolfo; Pelegrini, Fernando [Instituto de Física, Universidade Federal de Goiás, C. P. 131, 74001-970 Goiânia, GO (Brazil); Dantas, Noelio O. [Universidade Federal de Uberlândia, Instituto de Física, Laboratório de Novos Materiais Isolantes e Semicondutores (LNMIS), Uberlândia CEP: 38400-902 (Brazil)

    2015-10-25

    This work reports on the synthesis and characterization of Zn{sub 1−x}Mn{sub x}Te nanocrystals (NCs) with Mn doping concentration x varying from 0.000 to 0.800. Physical properties of samples were studied by transmission electron microscopy, magnetic force microscopy, vibrating sample magnetometry and electron paramagnetic resonance spectroscopy. Room temperature experiments revealed the size of NCs, the growth of magnetization and non-linear dependence of magnetic susceptibility on the concentration of Mn{sup 2+} ions; samples with low concentrations revealed the presence of ions in the interior and near the surface of the NCs. The results obtained confirm the paramagnetic behavior of Zn{sub 1−x}Mn{sub x}Te NCs at room temperature.

  12. Growth and characterization of indium-doped Cd1−xZnxTe crystal by traveling heater method

    International Nuclear Information System (INIS)

    Wei, Gaoli; Wang, Linjun; Zhang, Jijun; Yuan, Zhenwen; Qin, Kaifeng; Min, Jiahua; Liang, Xiaoyan; Xia, Yiben

    2013-01-01

    An indium-doped detector grade Cd 0.9 Zn 0.1 Te crystal was grown by the THM technique from Te-rich solution. The as-grown crystal showed the dark resistivity of (1–3)×10 10 Ω cm. Through IR transmission microscopy Te inclusion with regular triangular or circular shapes could be observed, and the size of Te inclusion was around 7 μm and the concentration was ∼10 5 cm −3 . The impurity concentrations were greatly reduced for the THM grown CZT, as compared to the Bridgman method grown CZT. A resolution of 8.5% was achieved under the 662 keV 137 Cs gamma ray radiation at room temperature for the as-grown CZT samples. -- Highlights: ► Detector grade Cd 1−x Zn x Te has been successfully grown by the THM technique. ► The as-grown CZT has a resistivity of ∼10 10 Ω cm. ► Te inclusions' size and concentration were comparable to the commercial CZT. ► A resolution of 8.5% was achieved for the 137 Cs 662 keVgamma line

  13. Instrumentation effects on U and Pu CBNM standards spectra quality measured on a 500 mm3 CdZnTe and a 2×2 inch LaBr3 detectors

    Science.gov (United States)

    Meleshenkovskii, I.; Borella, A.; Van der Meer, K.; Bruggeman, M.; Pauly, N.; Labeau, P. E.; Schillebeeckx, P.

    2018-01-01

    Nowadays, there is interest in developing gamma-ray measuring devices based on the room temperature operated medium resolution detectors such as semiconductor detectors of the CdZnTe type and scintillators of the LaBr3 type. This is true also for safeguards applications and the International Atomic Energy Agency (IAEA) has launched a project devoted to the assessment of medium resolution gamma-ray spectroscopy for the verification of the isotopic composition of U and Pu bearing samples. This project is carried out within the Non-Destructive Assay Working Group of the European Safeguards Research and Development Association (ESARDA). In this study we analyze medium resolution spectra of U and Pu standards with the aim to develop an isotopic composition determination algorithm, particularly suited for these types of detectors. We show how the peak shape of a CdZnTe detector is influenced by the instrumentation parameters. The experimental setup consisted of a 500 mm3 CdZnTe detector, a 2×2 inch LaBr3 detector, two types of measurement instrumentation - an analogue one and a digital one, and a set of certified samples - a 207Bi point source and U and Pu CBNM standards. The results of our measurements indicate that the lowest contribution to the peak asymmetry and thus the smallest impact on the resolution of the 500 mm3 CdZnTe detector was achieved with the digital MCA. Analysis of acquired spectra allowed to reject poor quality measurement runs and produce summed spectra files with the least impact of instrumentation instabilities. This work is preliminary to further studies concerning the development of an isotopic composition determination algorithm particularly suited for CZT and LaBr3 detectors for safeguards applications.

  14. Measurement of the drift mobilities and the mobility-lifetime products of charge carriers in a CdZnTe crystal by using a transient pulse technique

    International Nuclear Information System (INIS)

    Cho, H Y; Kwon, Y K; Lee, C S; Lee, J H; Moon, J Y

    2011-01-01

    In this work we present results on the measurement of the drift mobility and the mobility-lifetime product of charge carriers in a 16-pixellated CdZnTe detector. For the determination of an interaction position based on the pulse rise-time method in a CZT detector, it is necessary to characterize the transport properties governed by drift mobility and lifetime for electrons and holes. In order to extract the transport properties of an electron and a hole, we bombarded 5.5-MeV alpha particles from a 241 Am source and 81-keV gamma rays emitted from a 133 Ba source on the negatively biased contact of the CZT detector. A time-of-flight (TOF) method was used to measure the electron drift mobility at room temperature whose value turned out to be 906.4 cm 2 /Vc s. With the Hecht's equation, the electron mobility-lifetime product was also determined from the bias-dependent alpha response and was equal to (9.88 ± 2.33) x 10 -3 cm 2 /V. On the other hand, the hole mobility-lifetime product was evaluated by a model based on the average charge collection efficiency which accounts for the absorption probability with a given photon energy. By using a single parameter fitting of the model, we obtained the hole mobility-lifetime product of (8.28 ± 0.17) x 10 -4 cm 2 /V.

  15. Dual-wavelength photo-Hall effect spectroscopy of deep levels in high resistive CdZnTe with negative differential photoconductivity

    Science.gov (United States)

    Musiienko, A.; Grill, R.; Moravec, P.; Korcsmáros, G.; Rejhon, M.; Pekárek, J.; Elhadidy, H.; Šedivý, L.; Vasylchenko, I.

    2018-04-01

    Photo-Hall effect spectroscopy was used in the study of deep levels in high resistive CdZnTe. The monochromator excitation in the photon energy range 0.65-1.77 eV was complemented by a laser diode high-intensity excitation at selected photon energies. A single sample characterized by multiple unusual features like negative differential photoconductivity and anomalous depression of electron mobility was chosen for the detailed study involving measurements at both the steady and dynamic regimes. We revealed that the Hall mobility and photoconductivity can be both enhanced and suppressed by an additional illumination at certain photon energies. The anomalous mobility decrease was explained by an excitation of the inhomogeneously distributed deep level at the energy Ev + 1.0 eV, thus enhancing potential non-uniformities. The appearance of negative differential photoconductivity was interpreted by an intensified electron occupancy of that level by a direct valence band-to-level excitation. Modified Shockley-Read-Hall theory was used for fitting experimental results by a model comprising five deep levels. Properties of the deep levels and their impact on the device performance were deduced.

  16. Drift time variations in CdZnTe detectors measured with alpha-particles: Their correlation with the detector’s responses

    Energy Technology Data Exchange (ETDEWEB)

    Bolotnikov A. E.; Butcher, J.; Hamade, M.; Petryk, M.; Bolotnikov, A.; Camarda, G.; Cui, Y.; Hossain, A.; Kim, K.; Yang, G.; and James, R.

    2012-05-14

    Homogeneity of properties related to material crystallinity is a critical parameter for achieving high-performance CdZnTe (CZT) radiation detectors. Unfortunately, this requirement is not always satisfied in today's commercial CZT material due to high concentrations of extended defects, in particular subgrain boundaries, which are believed to be part of the causes hampering the energy resolution and efficiency of CZT detectors. In the past, the effects of subgrain boundaries have been studied in Si, Ge and other semiconductors. It was demonstrated that subgrain boundaries tend to accumulate secondary phases and impurities causing inhomogeneous distributions of trapping centers. It was also demonstrated that subgrain boundaries result in local perturbations of the electric field, which affect the carrier transport and other properties of semiconductor devices. The subgrain boundaries in CZT material likely behave in a similar way, which makes them responsible for variations in the electron drift time and carrier trapping in CZT detectors. In this work, we employed the transient current technique to measure variations in the electron drift time and related the variations to the device performances and subgrain boundaries, whose presence in the crystals were confirmed with white beam X-ray diffraction topography and infrared transmission microscopy.

  17. Description of vibrational properties of random alloy ZnTe{sub 1-x}Se{sub x} within the percolation model

    Energy Technology Data Exchange (ETDEWEB)

    Souhabi, Jihane; Chafi, Allal; Kassem, Mohammed; Nassour, Ayoub; Gleize, Jerome; Postnikov, A.V.; Hugel, J.; Pages, Olivier [Laboratoire de Physique des Milieux Denses, Universite Paul Verlaine - Metz, 1 Bd Arago, 57070 Metz (France)

    2009-05-15

    We discuss the classification of the phonon type behavior of semiconductor alloys as apparent in the Raman and infrared spectra, i.e. in terms of types (i) 1-bond{yields}1-mode and (ii) 2-bond{yields}1-mode (both covered by the Modified Random Element Isodisplacement model, operating at the macroscopic scale), and also (iii) the modified 2-mode type (exceptional), in the framework of the recent 1-bond{yields}2-mode percolation model based on a description of the alloy disorder at the mesoscopic scale. The leading systems of types (i) and (iii), i.e., InGaAs and InGaP, respectively, were earlier shown to obey the percolation model. The aim of this work is to investigate whether the percolation model further extends to the leading system of the last type (ii), i.e. ZnTeSe. With this end in view, we perform a careful re-examination of the Raman and infrared spectra of this alloy, as available in the literature. Special attention is awarded to the discussion and modeling of the puzzling multi-mode infrared reflectivity spectra. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  18. Compensation and trapping in CdZnTe radiation detectors studied by thermoelectric emission spectroscopy, thermally stimulated conductivity, and current-voltage measurements

    International Nuclear Information System (INIS)

    James, Ralph B.

    2000-01-01

    In today's commercially available counter-select-grade CdZnTe crystals for radiation detector applications, the thermal ionization energies of the traps and their types, whether electron or hole traps, were measured. The measurements were successfully done using thermoelectric emission spectroscopy (TEES) and thermally stimulated conductivity (TSC). For reliability, the electrical contacts to the sample were found to be very important and, instead of Au Schottky contacts, In Ohmic contacts had to be used. For the filling of the traps, photoexcitation was done at zero bias, at 20K and at wavelengths which gave the maximum bulk photoexcitation for the sample. Between the temperature range from 20 to 400 K, the TSC current was found to be on the order of ∼ 10,000 times or even larger than the TEES current, in agreement with theory, but only TEES could resolve the trap type and was sensitive to the deep traps. Large concentration of hole traps at 0.1 and 0.6 eV were observed and smaller contraction of electron traps at 0.4 eV was seen. These deep traps cause compensation in the material and also cause trapping that degrades the radiation detection measurement

  19. Dual-energy radiography of bone tissues using ZnSe-based scintielectronic detectors

    International Nuclear Information System (INIS)

    Grinyov, B.; Ryzhikov, V.; Lecoq, P.; Naydenov, S.; Opolonin, A.; Lisetskaya, E.; Galkin, S.; Shumeiko, N.

    2007-01-01

    Detectors of the scintillator-photodiode type were obtained on the basis of CsI(Tl), CdWO 4 and ZnSe(Te) crystals, and their comparative study was carried out, aiming at their use in X-ray computer tomography (CT). Because of their low afterglow level (10 ppm after 10 ms), CWO and ZnSe crystals are preferable for this application. A drawback of CWO is its lower (by 3 times) light output as compared with CsI(Tl). ZnSe has low transparence to intrinsic radiation; however, up to energies of 60-70 keV it is superior, as for the whole complex of its parameter, to materials traditionally used for CT detectors. The use of a dual-energy receiving-detecting circuit with a detector pair ZnSe/CsI or ZnSe/CdWO allows efficient distinction between muscular and bone tissues, which supports our earlier theoretical assumptions that this method could be successfully used for separate detection of materials differing in their effective atomic number Z eff and local density (e.g., calcium contents in bone densitometry)

  20. Effect of Tm{sup 3+} codoping on the near-infrared and upconversion emissions of Er{sup 3+} in TeO{sub 2}–ZnO–ZnF{sub 2} glasses

    Energy Technology Data Exchange (ETDEWEB)

    Miguel, A. [Departamento de Física Aplicada I, Escuela Superior de Ingeniería, Universidad del País Vasco UPV/EHU,Alda. Urquijo s/n, 48013 Bilbao (Spain); Arriandiaga, M.A. [Departamento de Física Aplicada II, Facultad de Ciencia y Tecnología, Universidad del País Vasco UPV/EHU, Apartado 644, Bilbao (Spain); Morea, R. [Instituto de Optica, Consejo Superior de Investigaciones Científicas CSIC, Serrano 121, 28006 Madrid (Spain); Fernandez, J. [Departamento de Física Aplicada I, Escuela Superior de Ingeniería, Universidad del País Vasco UPV/EHU,Alda. Urquijo s/n, 48013 Bilbao (Spain); Materials Physics Center CSIC-UPV/EHU and Donostia International Physics Center, 20018 San Sebastian (Spain); Gonzalo, J. [Instituto de Optica, Consejo Superior de Investigaciones Científicas CSIC, Serrano 121, 28006 Madrid (Spain); Balda, R., E-mail: wupbacrr@bi.ehu.es [Departamento de Física Aplicada I, Escuela Superior de Ingeniería, Universidad del País Vasco UPV/EHU,Alda. Urquijo s/n, 48013 Bilbao (Spain); Materials Physics Center CSIC-UPV/EHU and Donostia International Physics Center, 20018 San Sebastian (Spain)

    2014-10-15

    In this work, we report the near-infrared emission and upconversion of Er{sup 3+}–Tm{sup 3+} codoped fluorotellurite TeO{sub 2}–ZnO–ZnF{sub 2} glasses for different Tm{sup 3+} concentrations by using steady-state and time-resolved spectroscopy. A broad emission from 1350 to 1700 nm corresponding to the {sup 3}H{sub 4}→{sup 3}F{sub 4} (Tm{sup 3+}) and {sup 4}I{sub 13/2}→{sup 4}I{sub 15/2} (Er{sup 3+}) emissions which cover the complete telecommunication window of the wavelength-division-multiplexing transmission systems is observed. The full width at half-maximum of this broadband increases with increasing Tm{sup 3+}/Er{sup 3+} concentration ratio up to a value of∼150 nm. Energy transfer between Er{sup 3+} and Tm{sup 3+} ions is also observed and analyzed by both the temporal behavior of the near-infrared luminescence and the effect of Tm{sup 3+} codoping on the visible upconversion of Er{sup 3+} ions. The addition of Tm{sup 3+} reduces the upconverted green emission due to Er{sup 3+}→Tm{sup 3+} energy transfer whereas the red emission is enhanced due to the cross-relaxation {sup 3}F{sub 4}→{sup 3}H{sub 6}(Tm{sup 3+}):{sup 4}I{sub 11/2}→{sup 4}F{sub 9/2}(Er{sup 3+}) process. - Highlights: • Broadband emission covering the bands S, C+L and U of the optical telecommunications. • The effect of Tm{sup 3+} concentration were investigated in Er{sup 3+}–Tm{sup 3+} codoped fluorotellurite glasses. • Efficient Er{sup 3+}↔Tm{sup 3+} energy transfer in fluorotellurite glasses. • Increase of the red upconversion emission with Tm{sup 3+} concentration due to cross-relaxation processes.

  1. Down- and up-conversion emissions in Er{sup 3+}–Yb{sup 3+} codoped TeO{sub 2}–ZnO–ZnF{sub 2} glasses

    Energy Technology Data Exchange (ETDEWEB)

    Miguel, A. [Departamento de Física Aplicada I, Escuela Superior de Ingeniería, Universidad del País Vasco UPV/EHU, Alda. Urquijo s/n, 48013 Bilbao (Spain); Arriandiaga, M.A. [Departamento de Física Aplicada II, Facultad de Ciencia y Tecnología, Universidad del País Vasco UPV/EHU, Apartado 644, Bilbao (Spain); Morea, R. [Instituto de Optica, Consejo Superior de Investigaciones Científicas CSIC, Serrano 121, 28006 Madrid (Spain); Fernandez, J. [Departamento de Física Aplicada I, Escuela Superior de Ingeniería, Universidad del País Vasco UPV/EHU, Alda. Urquijo s/n, 48013 Bilbao (Spain); Materials Physics Center CSIC-UPV/EHU and Donostia International Physics Center, 20018 San Sebastian (Spain); Gonzalo, J. [Instituto de Optica, Consejo Superior de Investigaciones Científicas CSIC, Serrano 121, 28006 Madrid (Spain); Balda, R., E-mail: wupbacrr@bi.ehu.es [Departamento de Física Aplicada I, Escuela Superior de Ingeniería, Universidad del País Vasco UPV/EHU, Alda. Urquijo s/n, 48013 Bilbao (Spain); Materials Physics Center CSIC-UPV/EHU and Donostia International Physics Center, 20018 San Sebastian (Spain)

    2015-02-15

    In this work, we report the near infrared and upconversion emissions of Er{sup 3+}–Yb{sup 3+} codoped fluorotellurite TeO{sub 2}–ZnO–ZnF{sub 2} glasses for different YbF{sub 3} concentrations ranging between 0.5 and 2 wt%. The study includes absorption and emission spectra and lifetime measurements for the infrared and visible fluorescence. The energy transfer between Yb{sup 3+} and Er{sup 3+} ions is confirmed by the temporal behavior of the near-infrared luminescence of Yb{sup 3+} ions as well as by the enhancement of the 1532 nm emission of Er{sup 3+} ions in the codoped samples. The Yb{sup 3+}→Er{sup 3+} energy transfer efficiency is calculated from the Yb{sup 3+} lifetimes in single and codoped samples. Back transfer from Er{sup 3+} to Yb{sup 3+} ions is present under near infrared and visible excitation of Er{sup 3+} ions at 798 and 488 nm respectively. An enhancement of the visible upconversion fluorescence is also observed in the codoped samples due to energy transfer from Yb{sup 3+} to Er{sup 3+} ions. The standardized value for the efficiency of the green upconversion emission is 1.06×10{sup −4} for the codoped sample with 2 wt% of YbF{sub 3} which is comparable to that reported in lead–zinc–tellurite glasses. The possible upconversion processes and mechanisms leading to the population of several excited levels are discussed. - Highlights: • The effect of Yb{sup 3+} concentration on the NIR and VIS emissions of Er{sup 3+}ions is studied. • TheYb{sup 3+}↔Er{sup 3+} energy transfer in fluorotellurite glasses is demonstrated. • Increase of the green upconversion emission with Yb{sup 3+} concentration due to Yb{sup 3+}→Er{sup 3+} energy transfer. • The ratio of red to green upconversion emissions depends on the concentration of Yb{sup 3+} ions.

  2. Structure of even-odd spherical nuclei using the BCS approximations and the ACQPV model: application to isotones with N=82 and Ni, Zn and Cs'' isotopes

    International Nuclear Information System (INIS)

    Losano, L.

    1986-01-01

    Calculations of the (E,J Π ) spectra and the electromagnetic properties (fe,Q,BEZ,BM1) are made for Ni odd isotopes, and odd isotones with N=82, using the Shell Model (SM), the usual BCS approximation (one and three quasiparticles), blocking BCS (BBCS) and projected BCS (PBCS). The importance of the five quasiparticle correlations and of the correlation introduced in BCS are examined in detail. The collective degrees of freedom of the core are introduced through the quasiparticle-cluster-vibrator coupling (QPCVC), so that this formalism permits as well the inclusion of blocking as the projection in number of particles in the cluster of one and three quasiparticles. Comparative calculations are made between the version with blocking (BQPCV) and with projection (PQPCV) for spectra and electromagnetic properties of Zn old isotopes. The projected version is applied to the cesium isotopes in the description of the 5/2 + states generated by the anomalous coupling. In all examined cases, the comparison with the available experimental data is also shown. (L.C.) [pt

  3. A novel dual-function molecularly imprinted polymer on CdTe/ZnS quantum dots for highly selective and sensitive determination of ractopamine

    International Nuclear Information System (INIS)

    Liu, Huilin; Liu, Dongrui; Fang, Guozhen; Liu, Fangfang; Liu, Cuicui; Yang, Yukun; Wang, Shuo

    2013-01-01

    Highlights: ► We have developed a novel dual-function MIP-coated QDs material. ► The MIP-coated QDs combine the advantage of molecular imprinting and QDs. ► We used MIP-coated QDs as fluorescence sensing material for recognize RAC. ► We used QDs@MIP as sorbent to combine SPE with HPLC for the determination. -- Abstract: A novel dual-function material was synthesized by anchoring a molecularly imprinted polymer (MIP) layer on CdTe/ZnS quantum dots (QDs) using a sol–gel with surface imprinting. The material exhibited highly selective and sensitive determination of ractopamine (RAC) through spectrofluorometry and solid-phase extraction (SPE) coupled with high performance liquid chromatography (HPLC). A series of adsorption experiments revealed that the material showed high selectivity, good adsorption capacity and a fast mass transfer rate. Fluorescence from the MIP-coated QDs was more strongly quenched by RAC than that of the non-imprinted polymer, which indicated that the MIP-coated QDs acted as a fluorescence sensing material could recognize RAC. In addition, the MIP-coated QDs as a sorbent was also shown to be promising for SPE coupled with HPLC for the determination of trace RAC in feeding stuffs and pork samples. Under optimal conditions, the spectrofluorometry and SPE-HPLC methods using the MIP-coated QDs had linear ranges of 5.00 × 10 −10 –3.55 × 10 −7 and 1.50 × 10 −10 –8.90 × 10 −8 mol L −1 , respectively, with limits of detection of 1.47 × 10 −10 and 8.30 × 10 −11 mol L −1 , the relative standard deviations for six repeat experiments of RAC (2.90 × 10 −9 mol L −1 ) were below 2.83% and 7.11%

  4. Optical spectroscopy of Sm(3+) doped Na2O-ZnO-La2O3-TeO2 glasses.

    Science.gov (United States)

    Sobczyk, Marcin

    2015-10-05

    Telluride glasses with the composition xSm2O3-(7-x)La2O3-3Na2O-25ZnO-65TeO2 (where x=0.1, 1, 2, 5 and 7 mol%) were obtained by the melt quenching technique. Electronic absorption and fluorescence spectra as well as fluorescence dynamics of the Sm(3+)-doped title glasses are presented and analysed in detail. A Judd-Ofelt intensity analysis of the absorption spectrum at 300 K has been applied for determination of Ωλ parameters (Ω2=3.10, Ω4=3.80, Ω6=1.61×10(-20) cm(2)) which in turn have been used for calculations of the radiative transition probabilities (AT), the natural (radiative) lifetimes (τR) of the (4)G5/2 level of Sm(3+), the fluorescence branching ratios (β) and the emission cross-sections (σem). The τR value of the (4)G5/2 level amount to 1546 μs and is slightly higher than the measured decay time of 1306 μs. With the increasing of Sm2O3 concentration from 0.1 to 7.0 mol% the experimental lifetime of the fluorescent level decreases from 1306 to 41 μs. An analysis of the non-radiative decay was based on the cross-relaxation mechanisms. The optical achieved results indicate that the investigated glasses are potentially applicable as an orange and/or red laser host. Copyright © 2015 Elsevier B.V. All rights reserved.

  5. Dark-red-emitting CdTe{sub 0.5}Se{sub 0.5}/Cd{sub 0.5}Zn{sub 0.5}S quantum dots: Effect of chemicals on properties

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Ping, E-mail: mse_yangp@ujn.edu.cn; Zhang, Aiyu; Li, Xiaoyu; Liu, Ning; Zhang, Yulan; Zhang, Ruili

    2013-08-15

    CdTe{sub 0.5}Se{sub 0.5}/Cd{sub 0.5}Zn{sub 0.5}S core/shell quantum dots (QDs) with a tunable photoluminescence (PL) range from yellow to dark red (up to a PL peak wavelength of 683 nm) were fabricated using various reaction systems. The core/shell QDs created in the reaction solution of trioctylamine (TOA) and oleic acid (OA) at 300 °C exhibited narrow PL spectra and a related low PL efficiency (38%). In contrast, the core/shell QDs prepared in the solution of 1-octadecene (ODE) and hexadecylamine (HDA) at 200 °C revealed a high PL efficiency (70%) and broad PL spectra. This phenomenon is ascribed that the precursor of Cd, reaction temperature, solvents, and ligands affected the formation process of the shell. The slow growth rate of the shell in the solution of ODE and HDA made QDs with a high PL efficiency. Metal acetate salts without reaction with HDA led to the core/shell QDs with a broad size distribution. - Graphical abstract: CdTe{sub 0.5}Se{sub 0.5}/Cd{sub 0.5}Zn{sub 0.5}S quantum dots (QDs) with tunable photoluminescence, high PL efficiency, and high stability through organic synthesis, in which chemicals affected the properties of the QDs. Display Omitted - Highlights: • CdTe{sub 0.5}Se{sub 0.5}/Cd{sub 0.5}Zn{sub 0.5}S quantum dots created via organic synthesis. • Chemicals affected the properties of the quantum dots. • The quantum dots revealed high photoluminescence efficiency and stability. • The quantum dots with tunable photoluminescence in a range from yellow to dark red. • The QDs are utilizable for various applications such as biological labeling.

  6. Dark-red-emitting CdTe0.5Se0.5/Cd0.5Zn0.5S quantum dots: Effect of chemicals on properties

    International Nuclear Information System (INIS)

    Yang, Ping; Zhang, Aiyu; Li, Xiaoyu; Liu, Ning; Zhang, Yulan; Zhang, Ruili

    2013-01-01

    CdTe 0.5 Se 0.5 /Cd 0.5 Zn 0.5 S core/shell quantum dots (QDs) with a tunable photoluminescence (PL) range from yellow to dark red (up to a PL peak wavelength of 683 nm) were fabricated using various reaction systems. The core/shell QDs created in the reaction solution of trioctylamine (TOA) and oleic acid (OA) at 300 °C exhibited narrow PL spectra and a related low PL efficiency (38%). In contrast, the core/shell QDs prepared in the solution of 1-octadecene (ODE) and hexadecylamine (HDA) at 200 °C revealed a high PL efficiency (70%) and broad PL spectra. This phenomenon is ascribed that the precursor of Cd, reaction temperature, solvents, and ligands affected the formation process of the shell. The slow growth rate of the shell in the solution of ODE and HDA made QDs with a high PL efficiency. Metal acetate salts without reaction with HDA led to the core/shell QDs with a broad size distribution. - Graphical abstract: CdTe 0.5 Se 0.5 /Cd 0.5 Zn 0.5 S quantum dots (QDs) with tunable photoluminescence, high PL efficiency, and high stability through organic synthesis, in which chemicals affected the properties of the QDs. Display Omitted - Highlights: • CdTe 0.5 Se 0.5 /Cd 0.5 Zn 0.5 S quantum dots created via organic synthesis. • Chemicals affected the properties of the quantum dots. • The quantum dots revealed high photoluminescence efficiency and stability. • The quantum dots with tunable photoluminescence in a range from yellow to dark red. • The QDs are utilizable for various applications such as biological labeling

  7. Facile synthesis of mercaptosuccinic acid-capped CdTe/CdS/ZnS core/double shell quantum dots with improved cell viability on different cancer cells and normal cells

    Energy Technology Data Exchange (ETDEWEB)

    Parani, Sundararajan [University of Madras, Department of Inorganic Chemistry (India); Bupesh, Giridharan [Bharath University, Central Research Laboratory, Sree Balaji Medical College and Hospital (India); Manikandan, Elayaperumal [Thiruvalluvar University, Department of Physics, TUCAS, Thennangur-604408 (India); Pandian, Kannaiyan [University of Madras, Department of Inorganic Chemistry (India); Oluwafemi, Oluwatobi Samuel, E-mail: oluwafemi.oluwatobi@gmail.com [University of Johannesburg, Department of Applied Chemistry (South Africa)

    2016-11-15

    Water-soluble, mercaptosuccinic acid (MSA)-capped CdTe/CdS/ZnS core/double shell quantum dots (QDs) were prepared by successive growth of CdS and ZnS shells on the as-synthesized CdTe/CdS{sub thin} core/shell quantum dots. The formation of core/double shell structured QDs was investigated by ultraviolet-visible (UV–Vis) absorption and photoluminescence (PL) spectroscopy, PL decay studies, X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS). The core/double shell QDs exhibited good photoluminescence quantum yield (PLQY) which is 70% higher than that of the parent core/shell QDs, and they are stable for months. The average particle size of the core/double shell QDs was ∼3 nm as calculated from the transmission electron microscope (TEM) images. The cytotoxicity of the QDs was evaluated on a variety of cancer cells such as HeLa, MCF-7, A549, and normal Vero cells by 3-(4,5-dimethyl-2-thiazolyl)-2,5-diphenyl-2H-tetrazolium bromide (MTT) cell viability assay. The results showed that core/double shell QDs were less toxic to the cells when compared to the parent core/shell QDs. MCF-7 cells showed proliferation on incubation with QDs, and this is attributed to the metalloestrogenic activity of cadmium ions released from QDs. The core/double shell CdTe/CdS/ZnS (CSS) QDs were conjugated with transferrin and successfully employed for the biolabeling and fluorescent imaging of HeLa cells. These core/double shell QDs are highly promising fluorescent probe for cancer cell labeling and imaging applications.

  8. The effect of doped zinc on the structural properties of nano-crystalline (Se{sub 0.8}Te{sub 0.2}){sub 100-x}Zn{sub x}

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Arun, E-mail: arunkumar82@pu.ac.in [Department of Physics, Panjab University, Chandigarh, INDIA-160014. (India); Guru Nanak National College, Doraha, Panjab, INDIA-141421. (India); Singh, Harkawal; Gill, P. S. [Sri Guru Gobind Singh College, Sector-26, Chandigarh, INDIA-160026. (India); Goyal, Navdeep, E-mail: n.goyal@pu.ac.in [Department of Physics, Panjab University, Chandigarh, INDIA-160014. (India)

    2016-05-06

    The effect of metallic zinc (Zn) on the structural properties of (Se{sub 0.8}Te{sub 0.2}){sub 1-X}Zn{sub X} (x=0, 2, 6, 8, 10) samples analyzed by X-ray Diffraction (XRD). The presence of sharp peaks in XRD patterns confirmed the crystalline nature of the samples and is indexed in orthorhombic crystal structure. XRD studies predicts that the average particle size of all the samples are about 46.29 nm, which is less than 100 nm and hence have strong tendency of agglomeration. Williamson-Hall plot method was used to evaluate the lattice strain. The dislocation density and no. of unit cells of the samples were calculated which show the inverse relation with each other. Morphology index derived from FWHM of XRD data explains the direct relationship with the particle size.

  9. A review of Pb-Sb(As-S, Cu(Ag-Fe(Zn-Sb(As-S, Ag(Pb-Bi(Sb-S and Pb-Bi-S(Te sulfosalt systems from the Boranja orefield, West Serbia

    Directory of Open Access Journals (Sweden)

    Radosavljević Slobodan A.

    2016-01-01

    Full Text Available Recent mineralogical, chemical, physical, and crystallographic investigations of the Boranja orefield showed very complex mineral associations and assemblages where sulfosalts have significant role. The sulfosalts of the Boranja orefield can be divided in four main groups: (i Pb-Sb(As-S system with ±Fe and ±Cu; (ii Cu(Ag-Fe(Zn-Sb(As-S system; (iii Ag(Pb-Bi(Sb-S; (iv and Pb-Bi-S(Te system. Spatially, these sulfosalts are widely spread, however, they are the most abundant in the following polymetallic deposits and ore zones: Cu(Bi-FeS Kram-Mlakva; Pb(Ag-Zn-FeS2 Veliki Majdan (Kolarica-Centralni revir-Kojići; Sb-Zn-Pb-As Rujevac; and Pb-Zn-FeS2-BaSO4 Bobija. The multi stage formation of minerals, from skarnhydrothermal to complex hydrothermal with various stages and sub-stages has been determined. All hydrothermal stages and sub-stages of various polymetallic deposits and ore zones within the Boranja orefield are followed by a variety of sulfosalts. [Projekat Ministarstva nauke Republike Srbije, br. OI-176016: Magmatism and geodynamics of the Balkan Peninsula from Mesozoic to present day: Significance for the formation of metallic and non-metallic mineral deposits

  10. Investigation of fundamental physical properties of CdSiP{sub 2} and its application in solar cell devices by using (ZnX; X = Se, Te) buffer layers

    Energy Technology Data Exchange (ETDEWEB)

    Verma, A.S., E-mail: ajay_phy@rediffmail.com [Department of Physics, Banasthali Vidyapith, Rajasthan 304022 (India); Gautam, Ruchita; Singh, Pravesh [Department of Physics, Banasthali Vidyapith, Rajasthan 304022 (India); Department of Electronics and Communication, Krishna Institute of Engineering and Technology, Ghaziabad, Uttar Pradesh 201206 (India); Sharma, Sheetal [Department of Physics, Swami Premanand Mahavidyalaya, Mukerian, Punjab 144211 (India); Kumari, Sarita [Department of Physics, University of Rajasthan, Jaipur 302004 (India)

    2016-03-15

    Graphical abstract: - Highlights: • FP-LAPW method has been used to compute the solid state properties of CdSiP{sub 2}. • Electronic and optical properties reported by WIEN2K with recently developed mBJ potential. • The elastic and thermal properties were evaluated by first principles calculations. • Hardness was calculated for the first time at different temperature and pressure. • Solar cell devices with ZnSe/ZnTe buffer layers by simulated work. - Abstract: The first principles calculations were performed by the linearized augmented plane wave (LAPW) method as implemented in the WIEN2K code within the density functional theory to obtain the structural, electronic and optical properties of CdSiP{sub 2} in the body centered tetragonal (BCT) phase. The six elastic constants (C{sub 11}, C{sub 12}, C{sub 13}, C{sub 33}, C{sub 44} and C{sub 66}) and mechanical parameters were presented and compared with the available experimental data. The thermodynamic calculations within the quasi-harmonic approximation is used to give an accurate description of the pressure-temperature dependence of the thermal-expansion coefficient, bulk modulus, specific heat, Debye temperature, entropy Grüneisen parameters and hardness. Further, CdSiP{sub 2} solar cell devices have been modeled; device physics and performance parameters are analyzed for zinc chalcogenide (ZnX; X = Se, Te) buffer layers. Simulation results for CdSiP{sub 2} thin layer solar cell show the maximum efficiency (25.7%) with ZnSe as the buffer layer.

  11. X-ray response of CdZnTe detectors grown by the vertical Bridgman technique: Energy, temperature and high flux effects

    Energy Technology Data Exchange (ETDEWEB)

    Abbene, L., E-mail: leonardo.abbene@unipa.it [Dipartimento di Fisica e Chimica (DiFC), Università di Palermo, Viale delle Scienze, Edificio 18, Palermo 90128 (Italy); Gerardi, G.; Turturici, A.A.; Raso, G. [Dipartimento di Fisica e Chimica (DiFC), Università di Palermo, Viale delle Scienze, Edificio 18, Palermo 90128 (Italy); Benassi, G. [due2lab s.r.l., Via Paolo Borsellino 2, Scandiano, Reggio Emilia 42019 (Italy); Bettelli, M. [IMEM/CNR, Parco Area delle Scienze 37/A, Parma 43100 (Italy); Zambelli, N. [due2lab s.r.l., Via Paolo Borsellino 2, Scandiano, Reggio Emilia 42019 (Italy); Zappettini, A. [IMEM/CNR, Parco Area delle Scienze 37/A, Parma 43100 (Italy); Principato, F. [Dipartimento di Fisica e Chimica (DiFC), Università di Palermo, Viale delle Scienze, Edificio 18, Palermo 90128 (Italy)

    2016-11-01

    Nowadays, CdZnTe (CZT) is one of the key materials for the development of room temperature X-ray and gamma ray detectors and great efforts have been made on both the device and the crystal growth technologies. In this work, we present the results of spectroscopic investigations on new boron oxide encapsulated vertical Bridgman (B-VB) grown CZT detectors, recently developed at IMEM-CNR Parma, Italy. Several detectors, with the same electrode layout (gold electroless contacts) and different thicknesses (1 and 2.5 mm), were realized: the cathode is a planar electrode covering the detector surface (4.1×4.1 mm{sup 2}), while the anode is a central electrode (2×2 mm{sup 2}) surrounded by a guard-ring electrode. The detectors are characterized by electron mobility-lifetime product (µ{sub e}τ{sub e}) values ranging between 0.6 and 1·10{sup −3} cm{sup 2}/V and by low leakage currents at room temperature and at high bias voltages (38 nA/cm{sup 2} at 10000 V/cm). The spectroscopic response of the detectors to monochromatic X-ray and gamma ray sources ({sup 109}Cd, {sup 241}Am and {sup 57}Co), at different temperatures and fluxes (up to 1 Mcps), was measured taking into account the mitigation of the effects of incomplete charge collection, pile-up and high flux radiation induced polarization phenomena. A custom-designed digital readout electronics, developed at DiFC of University of Palermo (Italy), able to perform a fine pulse shape and height analysis even at high fluxes, was used. At low rates (200 cps) and at room temperature (T=25 °C), the detectors exhibit an energy resolution FWHM around 4% at 59.5 keV, for comparison an energy resolution of 3% was measured with Al/CdTe/Pt detectors by using the same electronics (A250F/NF charge sensitive preamplifier, Amptek, USA; nominal ENC of 100 electrons RMS). At high rates (750 kcps), energy resolution values of 7% and 9% were measured, with throughputs of 2% and 60% respectively. No radiation polarization phenomena were

  12. A novel dual-function molecularly imprinted polymer on CdTe/ZnS quantum dots for highly selective and sensitive determination of ractopamine

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Huilin; Liu, Dongrui; Fang, Guozhen; Liu, Fangfang; Liu, Cuicui; Yang, Yukun [Key Laboratory of Food Nutrition and Safety, Ministry of Education, Tianjin Key Laboratory of Food Nutrition and Safety, Tianjin University of Science and Technology, Tianjin 300457 (China); Wang, Shuo, E-mail: s.wang@tust.edu.cn [Key Laboratory of Food Nutrition and Safety, Ministry of Education, Tianjin Key Laboratory of Food Nutrition and Safety, Tianjin University of Science and Technology, Tianjin 300457 (China)

    2013-01-31

    Highlights: ► We have developed a novel dual-function MIP-coated QDs material. ► The MIP-coated QDs combine the advantage of molecular imprinting and QDs. ► We used MIP-coated QDs as fluorescence sensing material for recognize RAC. ► We used QDs@MIP as sorbent to combine SPE with HPLC for the determination. -- Abstract: A novel dual-function material was synthesized by anchoring a molecularly imprinted polymer (MIP) layer on CdTe/ZnS quantum dots (QDs) using a sol–gel with surface imprinting. The material exhibited highly selective and sensitive determination of ractopamine (RAC) through spectrofluorometry and solid-phase extraction (SPE) coupled with high performance liquid chromatography (HPLC). A series of adsorption experiments revealed that the material showed high selectivity, good adsorption capacity and a fast mass transfer rate. Fluorescence from the MIP-coated QDs was more strongly quenched by RAC than that of the non-imprinted polymer, which indicated that the MIP-coated QDs acted as a fluorescence sensing material could recognize RAC. In addition, the MIP-coated QDs as a sorbent was also shown to be promising for SPE coupled with HPLC for the determination of trace RAC in feeding stuffs and pork samples. Under optimal conditions, the spectrofluorometry and SPE-HPLC methods using the MIP-coated QDs had linear ranges of 5.00 × 10{sup −10}–3.55 × 10{sup −7} and 1.50 × 10{sup −10}–8.90 × 10{sup −8} mol L{sup −1}, respectively, with limits of detection of 1.47 × 10{sup −10} and 8.30 × 10{sup −11} mol L{sup −1}, the relative standard deviations for six repeat experiments of RAC (2.90 × 10{sup −9} mol L{sup −1}) were below 2.83% and 7.11%.

  13. Structural and luminescence studies of Eu3+: TeO2sbnd B2O3sbnd AOsbnd AF2 (A = Pb, Ba, Zn, Cd, Sr) glasses

    Science.gov (United States)

    Selvi, S.; Marimuthu, K.; Muralidharan, G.

    2017-09-01

    Eu3+ doped oxyfluoro boro-tellurite (TBXFE) with molar composition 29 TeO2sbnd 30B2O3sbnd 20AOsbnd 20AF2sbnd 1Eu2O3 (where A = Pb, Ba, Zn, Cd, Sr) glasses were prepared and investigated by XRD, FTIR, UV-Vis-NIR, luminescence and decay measurements. XRD patterns confirm the glassy nature of the prepared glasses. The influence of metal ions on the structure of boro-tellurite glasses were investigated through FTIR spectra. The intra band (4f-4f) transitions of Eu3+ ions are discussed through UV-Vis-NIR absorption spectra. The covalent nature around the Eu3+ ions with ligands are discussed using the bonding parameter (δ) and nephelauxetic ratio (β). The fundamental absorption edge, direct, indirect band gap, Urbach energy and band tailing parameters are reported. A bright red emission at 616 nm corresponding to the 5D0 → 7F2 transition of Eu3+ ions could be observed in the title glasses. Judd-Ofelt parameters were estimated from the emission spectra of Eu3+ ions. The dependence of these parameters on the composition of the glass is discussed. Judd-Ofelt parameters were used to derive the radiative parameters such as transition probabilities (A, s-1), branching ratios (βR), radiative lifetime (τrad) and stimulated emission cross-section (σPE) for the 5D0 → 7FJ (J = 0, 1, 2, 3 and 4) transitions. The luminescence intensity ratio (LIR) of 5D0 → 7F2/5D0 → 7F1 transitions was estimated to analyze the local site symmetry around the Eu3+ ions in the present glasses. The chromaticity coordinates and colour purity were calculated from the emission spectra and analyzed with Commission International de I'Eclairage (CIE) 1931 diagram. The experimental lifetime of 5D0 level could be fitted to a single exponential indicating the absence of energy transfer between the Eu3+ ions in the present glasses.

  14. CsI and some new photocathodes

    International Nuclear Information System (INIS)

    Anderson, D.F.; Kwan, S.; Peskov, V.

    1993-06-01

    A discussion of the possible sources of discrepancies in the measurements of the quantum efficiency of CsI photocathodes is presented. We propose that the major causes for disagreements in QE are due to the QE dependence on the current density extracted from the photocathode, on the electric field, and on the temperature of the photocathode. Preliminary results on TMAE enhanced GaAs and Si, plus TMAE protected CsTe and SbCs photocathodes, operated in gas, are also presented

  15. High quality antireflective ZnS thin films prepared by chemical bath deposition

    International Nuclear Information System (INIS)

    Tec-Yam, S.; Rojas, J.; Rejón, V.; Oliva, A.I.

    2012-01-01

    Zinc sulfide (ZnS) thin films for antireflective applications were deposited on glass substrates by chemical bath deposition (CBD). Chemical analysis of the soluble species permits to predict the optimal pH conditions to obtain high quality ZnS films. For the CBD, the ZnCl 2 , NH 4 NO 3 , and CS(NH 2 ) 2 were fixed components, whereas the KOH concentration was varied from 0.8 to 1.4 M. Groups of samples with deposition times from 60 to 120 min were prepared in a bath with magnetic agitation and heated at 90 °C. ZnS films obtained from optimal KOH concentrations of 0.9 M and 1.0 M exhibited high transparency, homogeneity, adherence, and crystalline. The ZnS films presented a band gap energy of 3.84 eV, an atomic Zn:S stoichiometry ratio of 49:51, a transmittance above 85% in the 300–800 nm wavelength range, and a reflectance below 25% in the UV–Vis range. X-ray diffraction analysis revealed a cubic structure in the (111) orientation for the films. The thickness of the films was tuned between 60 nm and 135 nm by controlling the deposition time and KOH concentration. The incorporation of the CBD-ZnS films into ITO/ZnS/CdS/CdTe and glass/Mo/ZnS heterostructures as antireflective layer confirms their high optical quality. -- Highlights: ► High quality ZnS thin films were prepared by chemical bath deposition (CBD). ► Better CBD-ZnS films were achieved by using 0.9 M-KOH concentration. ► Reduction in the reflectance was obtained for ZnS films used as buffer layers.

  16. Investigation of radiation shielding properties for MeO-PbCl2-TeO2 (MeO = Bi2O3, MoO3, Sb2O3, WO3, ZnO) glasses

    Science.gov (United States)

    Sayyed, M. I.; Çelikbilek Ersundu, M.; Ersundu, A. E.; Lakshminarayana, G.; Kostka, P.

    2018-03-01

    In this work, glasses in the MeO-PbCl2-TeO2 (MeO = Bi2O3, MoO3, Sb2O3, WO3, ZnO) system, which show a great potential for optoelectronic applications, were used to evaluate their resistance under high energy ionizing radiations. The basic shielding quantities for determining the penetration of radiation in glass, such as mass attenuation coefficient (μ/ρ), half value layer (HVL), mean free path (MFP) and exposure buildup factor (EBF) values were investigated within the energy range 0.015 MeV ‒ 15 MeV using XCOM program and variation of shielding parameters were compared with different glass systems and ordinary concrete. From the derived results, it was determined that MeO-PbCl2-TeO2 (MeO = Bi2O3, MoO3, Sb2O3, WO3, ZnO) glasses show great potentiality to be used under high energy radiations. Among the studied glass compositions, Bi2O3 and WO3 containing glasses were found to possess superior gamma-ray shielding effectiveness.

  17. CS Informativeness Governs CS-US Associability

    Science.gov (United States)

    Ward, Ryan D.; Gallistel, C. R.; Jensen, Greg; Richards, Vanessa L.; Fairhurst, Stephen; Balsam, Peter D

    2012-01-01

    In a conditioning protocol, the onset of the conditioned stimulus (CS) provides information about when to expect reinforcement (the US). There are two sources of information from the CS in a delay conditioning paradigm in which the CS-US interval is fixed. The first depends on the informativeness, the degree to which CS onset reduces the average expected time to onset of the next US. The second depends only on how precisely a subject can represent a fixed-duration interval (the temporal Weber fraction). In three experiments with mice, we tested the differential impact of these two sources of information on rate of acquisition of conditioned responding (CS-US associability). In Experiment 1, we show that associability (the inverse of trials to acquisition) increases in proportion to informativeness. In Experiment 2, we show that fixing the duration of the US-US interval or the CS-US interval or both has no effect on associability. In Experiment 3, we equated the increase in information produced by varying the C̅/T̅ ratio with the increase produced by fixing the duration of the CS-US interval. Associability increased with increased informativeness, but, as in Experiment 2, fixing the CS-US duration had no effect on associability. These results are consistent with the view that CS-US associability depends on the increased rate of reward signaled by CS onset. The results also provide further evidence that conditioned responding is temporally controlled when it emerges. PMID:22468633

  18. Determining of the growth mechanisms in the MBE growth of ternary Cd1-xAxTe (A = Zn, Mn, Hg) compounds. Part I - Methods of analysis of surface processes

    International Nuclear Information System (INIS)

    Sadowski, J.T.

    1999-01-01

    This paper is the first part of an extended abstract of the PhD thesis entitled 'Determining of the growth mechanisms in MBE growth of ternary Cd 1-x A x Te (A = Zn, Mn, Hg) compounds' written on the base of experiments performed in the MBE Lab. in Institute of Vacuum Technology, Warsaw. In that paper, the scientific problems to be solved in thesis are described. Also the analytical techniques (reflection quadrupole mass spectroscopy (REMS), reflection high-energy electron diffraction (RHEED), and laser interferometry (LI)) used in investigation and its implementation to 'in situ' measurements in MBE growth system are depicted. The experiments and extracted scientific results will be presented in the following paper, in next Elektronika issue. (author)

  19. Correlation of point defects in CdZnTe with charge transport:application to room-temperature X-ray and gamma-ray detectors. Final Technical Report

    International Nuclear Information System (INIS)

    Giles, Nancy C.

    2003-01-01

    The primary goal of this project has been to characterize and identify point defects (e.g., impurities, vacancies, vacancy-impurity complexes, etc.) in CdZnTe and determine the mechanisms by which these defects influence the carrier μτproducts. Special attention is given to the role of shallow donors, shallow acceptors, and deeper acceptors. There are two experimental focus areas in the project: (1) liquid-helium photoluminescence (PL) and PL excitation spectroscopy are used to identify and characterize donors and acceptors and to determine zinc molar fraction; and (2) electron paramagnetic resonance (EPR) and photoinduced EPR experiments are performed at liquid-helium temperature to identify paramagnetic point defects and to determine the concentration of these defects. Results from the two experimental focus areas are correlated with detector performance parameters (e.g., electron and hole μτ products), crystal growth conditions, and microstructure analyses

  20. Size-confined fixed-composition and composition-dependent engineered band gap alloying induces different internal structures in L-cysteine-capped alloyed quaternary CdZnTeS quantum dots

    Science.gov (United States)

    Adegoke, Oluwasesan; Park, Enoch Y.

    2016-06-01

    The development of alloyed quantum dot (QD) nanocrystals with attractive optical properties for a wide array of chemical and biological applications is a growing research field. In this work, size-tunable engineered band gap composition-dependent alloying and fixed-composition alloying were employed to fabricate new L-cysteine-capped alloyed quaternary CdZnTeS QDs exhibiting different internal structures. Lattice parameters simulated based on powder X-ray diffraction (PXRD) revealed the internal structure of the composition-dependent alloyed CdxZnyTeS QDs to have a gradient nature, whereas the fixed-composition alloyed QDs exhibited a homogenous internal structure. Transmission electron microscopy (TEM) and dynamic light scattering (DLS) analysis confirmed the size-confined nature and monodispersity of the alloyed nanocrystals. The zeta potential values were within the accepted range of colloidal stability. Circular dichroism (CD) analysis showed that the surface-capped L-cysteine ligand induced electronic and conformational chiroptical changes in the alloyed nanocrystals. The photoluminescence (PL) quantum yield (QY) values of the gradient alloyed QDs were 27-61%, whereas for the homogenous alloyed QDs, the PL QY values were spectacularly high (72-93%). Our work demonstrates that engineered fixed alloying produces homogenous QD nanocrystals with higher PL QY than composition-dependent alloying.

  1. CsI Calorimeter for a Compton-Pair Telescope

    Science.gov (United States)

    Grove, Eric J.

    We propose to build and test a hodoscopic CsI(Tl) scintillating-crystal calorimeter for a medium-energy γ-ray Compton and pair telescope. The design and technical approach for this calorimeter relies deeply on heritage from the Fermi LAT CsI Calorimeter, but it dramatically improves the low-energy performance of that design by reading out the scintillation light with silicon photomultipliers (SiPMs), making the technology developed for Fermi applicable in the Compton regime. While such a hodoscopic calorimeter is useful for an entire class of medium-energy γ-ray telescope designs, we propose to build it explicitly to support beam tests and balloon flight of the Proto-ComPair telescope, the development and construction of which was funded in a four-year APRA program beginning in 2015 ("ComPair: Steps to a Medium Energy γ-ray Mission" with PI J. McEnery of GSFC). That award did not include funding for its CsI calorimeter subsystem, and this proposal is intended to cover that gap. ComPair is a MIDEX-class instrument concept to perform a high-sensitivity survey of the γ-ray sky from 0.5 MeV to 500 MeV. ComPair is designed to provide a dramatic increase in sensitivity relative to previous instruments in this energy range (predominantly INTEGRAL/SPI and Compton COMPTEL), with the same transformative sensitivity increase - and corresponding scientific return- that the Fermi Large Area Telescope provided relative to Compton EGRET. To enable transformative science over a broad range of MeV energies and with a wide field of view, ComPair is a combined Compton telescope and pair telescope employing a silicon-strip tracker (for Compton scattering and pair conversion and tracking) and a solid-state CdZnTe calorimeter (for Compton absorption) and CsI calorimeter (for pair calorimetry), surrounded by a plastic scintillator anti-coincidence detector. Under the current proposal, we will complete the detailed design, assembly, and test of the CsI calorimeter for the risk

  2. Study and optimisation of the high energy detector in Cd(Zn)Te of the Simbol-X space mission for X and gamma astronomy

    International Nuclear Information System (INIS)

    Meuris, A.

    2009-09-01

    Stars in final phases of evolution are sites of highest energetic phenomena of the Universe. The understanding of their mechanisms is based on the observation of the X and gamma rays from the sources. The Simbol-X French-Italian project is a novel concept of telescope with two satellites flying in formation. This space mission combines upgraded optics from X-ray telescopes with detection Systems from gamma-ray telescopes. CEA Saclay involved in major space missions for gamma astronomy is in charge of the definition and the design of the High Energy Detector (HED) of Simbol-X to cover the spectral range from 8 to 80 keV. Two generations of micro-cameras called Caliste have been designed, fabricated and tested. They integrate cadmium telluride (CdTe) crystals and optimised front-end electronics named Idef-X. The hybridization technique enables to put them side by side as a mosaic to achieve for the first time a CdTe detection plane with fine spatial resolution (600 μm) and arbitrarily large surface. By setting up test benches and leading test campaigns, I was involved in the fabrication of Caliste prototypes and I assessed temporal, spatial and spectral resolutions. At the conclusion of experiments and simulations, I propose a detector type, operating conditions and digital processing on board the spacecraft to optimise HED performance. The best detector candidate is CdTe Schottky, well suited to high resolution spectroscopy; however, it suffers from lost in stability during biasing. Beyond Simbol-X mission, I studied theoretically and experimentally this kind of detector to build an updated model that can apply to other projects of gamma spectroscopy and imaging. (author)

  3. Nd{sup 3+}-doped TeO{sub 2}-Bi{sub 2}O{sub 3}-ZnO transparent glass ceramics for laser application at 1.06 μm

    Energy Technology Data Exchange (ETDEWEB)

    Hu, Xiaolin; Luo, Zhiwei; Liu, Taoyong; Lu, Anxian [Central South of University, School of Materials Science and Engineering, Changsha (China)

    2017-04-15

    The high crystallinity transparent glass ceramics based on Nd{sup 3+}-doped 70TeO{sub 2}-15Bi{sub 2}O{sub 3}-15ZnO (TBZ) compositions were successfully prepared by two-step heat treatment process. The effects of Nd{sub 2}O{sub 3} content on the thermal, structural, mechanical, and optical properties of TBZ glass ceramics were studied. The incorporation of Nd{sub 2}O{sub 3} enhanced the crystallization tendency in the matrix glass composition. The crystal phase and morphology of Bi{sub 2}Te{sub 4}O{sub 11} in the glass ceramics were confirmed by X-ray diffraction and field emission scanning electron microscopy. Due to precipitate more crystal phase, the hardness values increased from 3.21 to 3.66 GPa. Eight absorption peaks were observed from 400 to 900 nm and three emission bands appeared in the range of 850-1400 nm. With the increasing of Nd{sub 2}O{sub 3} content from 0.5 to 2.5 wt%, the intensity of absorption peaks enhanced and the emission intensity increased up to 1.0 wt% and then fell down for further dopant concentration. The fluorescence decay lifetime decreased rapidly starting from 1.5 wt% Nd{sub 2}O{sub 3} content due to the obvious energy migration among Nd{sup 3+}. According to the extreme strong emission band around 1062 nm and the optimum Nd{sub 2}O{sub 3} content (1.0 wt%), N10 glass ceramic was considered as a potential material for 1.06 μm laser applications. (orig.)

  4. Métallogénie du gîte à PB-ZN-AG de Nicholas-Denys, Nouveau-Brunswick

    OpenAIRE

    Deakin, Michelle Kyle

    2011-01-01

    Le gîte à Pb–Zn–Ag de Nicholas-Denys, dans le camp minier de Bathurst (Nouveau-Brunswick), est constitué de plusieurs lentilles à pyrrhotite–sphalérite–galène, encaissées par le mudstone de la Formation de Millstream du Groupe de Fournier, déposé dans un bassin d’arrière-arc ordovicien. Les lentilles de sulfures sont concordantes avec la foliation régional S1, et sont boudinées parallèlement à la faille de Rocky-Brook Millstream, indiquant que les sulfures prédatent la déformation décrochante...

  5. 3-D topological signatures and a new discrimination method for single-electron events and 0νββ events in CdZnTe: A Monte Carlo simulation study

    Energy Technology Data Exchange (ETDEWEB)

    Zeng, Ming; Li, Teng-Lin; Cang, Ji-Rong [Key Laboratory of Particle & Radiation Imaging (Tsinghua University), Ministry of Education (China); Department of Engineering Physics, Tsinghua University, Beijing 100084 (China); Zeng, Zhi, E-mail: zengzhi@tsinghua.edu.cn [Key Laboratory of Particle & Radiation Imaging (Tsinghua University), Ministry of Education (China); Department of Engineering Physics, Tsinghua University, Beijing 100084 (China); Fu, Jian-Qiang; Zeng, Wei-He; Cheng, Jian-Ping; Ma, Hao; Liu, Yi-Nong [Key Laboratory of Particle & Radiation Imaging (Tsinghua University), Ministry of Education (China); Department of Engineering Physics, Tsinghua University, Beijing 100084 (China)

    2017-06-21

    In neutrinoless double beta (0νββ) decay experiments, the diversity of topological signatures of different particles provides an important tool to distinguish double beta events from background events and reduce background rates. Aiming at suppressing the single-electron backgrounds which are most challenging, several groups have established Monte Carlo simulation packages to study the topological characteristics of single-electron events and 0νββ events and develop methods to differentiate them. In this paper, applying the knowledge of graph theory, a new topological signature called REF track (Refined Energy-Filtered track) is proposed and proven to be an accurate approximation of the real particle trajectory. Based on the analysis of the energy depositions along the REF track of single-electron events and 0νββ events, the REF energy deposition models for both events are proposed to indicate the significant differences between them. With these differences, this paper presents a new discrimination method, which, in the Monte Carlo simulation, achieved a single-electron rejection factor of 93.8±0.3 (stat.)% as well as a 0νββ efficiency of 85.6±0.4 (stat.)% with optimized parameters in CdZnTe.

  6. An array of virtual Frisch-grid CdZnTe detectors and a front-end application-specific integrated circuit for large-area position-sensitive gamma-ray cameras

    Energy Technology Data Exchange (ETDEWEB)

    Bolotnikov, A. E., E-mail: bolotnik@bnl.gov; Ackley, K.; Camarda, G. S.; Cherches, C.; Cui, Y.; De Geronimo, G.; Fried, J.; Hossain, A.; Mahler, G.; Maritato, M.; Roy, U.; Salwen, C.; Vernon, E.; Yang, G.; James, R. B. [Brookhaven National Laboratory, Upton, New York 11793 (United States); Hodges, D. [University of Texas at El Paso, El Paso, Texas 79968 (United States); Lee, W. [Korea University, Seoul 136-855 (Korea, Republic of); Petryk, M. [SUNY Binghamton, Vestal, New York 13902 (United States)

    2015-07-15

    We developed a robust and low-cost array of virtual Frisch-grid CdZnTe detectors coupled to a front-end readout application-specific integrated circuit (ASIC) for spectroscopy and imaging of gamma rays. The array operates as a self-reliant detector module. It is comprised of 36 close-packed 6 × 6 × 15 mm{sup 3} detectors grouped into 3 × 3 sub-arrays of 2 × 2 detectors with the common cathodes. The front-end analog ASIC accommodates up to 36 anode and 9 cathode inputs. Several detector modules can be integrated into a single- or multi-layer unit operating as a Compton or a coded-aperture camera. We present the results from testing two fully assembled modules and readout electronics. The further enhancement of the arrays’ performance and reduction of their cost are possible by using position-sensitive virtual Frisch-grid detectors, which allow for accurate corrections of the response of material non-uniformities caused by crystal defects.

  7. Improving