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Sample records for cs te zn

  1. Studies of scintillation light nonproportionality of ZnSe(Te), CsI(Tl) and YAP(Ce) crystals using heavy ions

    CERN Document Server

    Klamra, W; Kapusta, M; Kérek, A; Moszynski, M; Norlin, L O; Novák, D; Possnert, G

    2002-01-01

    The scintillation light yield for ZnSe(Te), CsI(Tl) and YAP(Ce) crystals have been studied with alpha particles, sup 1 sup 2 C and sup 8 sup 1 Br in the energy region 2.8-42.2 MeV. A nonproportional behavior was observed, mostly pronounced for alpha particles on YAP(Ce). The results are understood in terms of delta-rays effect.

  2. Characterization of charge carrier collection in a CdZnTe Frisch collar detector with a highly collimated {sup 137}Cs source

    Energy Technology Data Exchange (ETDEWEB)

    Kargar, Alireza [S.M.A.R.T. Laboratory, Department of Mechanical and Nuclear Engineering, Kansas State University, Manhattan, KS 66506 (United States); Harrison, Mark J. [Nuclear and Radiological Engineering, University of Florida, 202 NSB, Gainesville, FL 32611 (United States); Brooks, Adam C. [S.M.A.R.T. Laboratory, Department of Mechanical and Nuclear Engineering, Kansas State University, Manhattan, KS 66506 (United States); McGregor, Douglas S., E-mail: mcgregor@ksu.ed [S.M.A.R.T. Laboratory, Department of Mechanical and Nuclear Engineering, Kansas State University, Manhattan, KS 66506 (United States)

    2010-08-21

    A 4.7 x4.7x9.5 mm{sup 3} CdZnTe Frisch collar device was characterized through probing the device with a highly collimated {sup 137}Cs 662 keV gamma ray source. In a systematic series of experiments, the detector was probed along the length and width with a {sup 137}Cs gamma ray source using a 43.0 mm long Pb-collimator with a 0.6 mm circular hole. The detector was probed along the central line under different operating voltages of 1200, 1000, 800, 600 and 400 V. The experimental results correlated well to charge collection calculations for a modeled device with the same size and operating conditions. It was proved that, unlike the planar configuration, the charge collection efficiency profile along the length of Frisch collar device is considerably improved. The CdZnTe raw materials for this study were acquired from Redlen Technologies, and the Frisch collar device was fabricated and characterized at S.M.A.R.T. Laboratory at Kansas State University.

  3. Radiochemical neutron activation analysis for 36 elements in geological material: Au, Ag, Bi, Br, Cd, Cs, Ge, In, Ir, Ni, Os, Pd, Rb, Re, Sb, Se, Sn, Te, Tl, U, and Zn as well as Sc, Y, and REE

    Energy Technology Data Exchange (ETDEWEB)

    Anders, E; Wolf, R; Morgan, J W; Ebihara, M; Woodrow, A B; Janssens, M J; Hertogen, J

    1988-01-01

    In lunar and terrestrial rocks and in meteorites, the radiochemical neutron activation method decribed here enables determination of the 21 trace and ultratrace elements Ag, Au, Bi, Br, Cd, Cs, Ga, Ge, In, Ir, Ni, Os, Pd, Rb, Re, Sb, Se, Te, Tl, U, Zn, as well as 13 rare earth elements (REE), Sc and Y. Materials, techniques and procedures are discussed. 81 refs.

  4. ZnSe/ZnSeTe Superlattice Nanotips

    Directory of Open Access Journals (Sweden)

    Young SJ

    2010-01-01

    Full Text Available Abstract The authors report the growth of ZnSe/ZnSeTe superlattice nanotips on oxidized Si(100 substrate. It was found the nanotips exhibit mixture of cubic zinc-blende and hexagonal wurtzite structures. It was also found that photoluminescence intensities observed from the ZnSe/ZnSeTe superlattice nanotips were much larger than that observed from the homogeneous ZnSeTe nanotips. Furthermore, it was found that activation energies for the ZnSe/ZnSeTe superlattice nanotips with well widths of 16, 20, and 24 nm were 76, 46, and 19 meV, respectively.

  5. ZnSe/ZnSeTe Superlattice Nanotips

    Science.gov (United States)

    2010-01-01

    The authors report the growth of ZnSe/ZnSeTe superlattice nanotips on oxidized Si(100) substrate. It was found the nanotips exhibit mixture of cubic zinc-blende and hexagonal wurtzite structures. It was also found that photoluminescence intensities observed from the ZnSe/ZnSeTe superlattice nanotips were much larger than that observed from the homogeneous ZnSeTe nanotips. Furthermore, it was found that activation energies for the ZnSe/ZnSeTe superlattice nanotips with well widths of 16, 20, and 24 nm were 76, 46, and 19 meV, respectively. PMID:20672085

  6. The properties of CdTe solar cells with ZnTe/ZnTe: Cu buffer layers

    Institute of Scientific and Technical Information of China (English)

    Song Huijin; Zheng Jiagui; Feng Lianghuan; Yan Qiang; Lei Zhi; Wu Lili; Zhang Jingquan; Li Wei; Li Bing

    2008-01-01

    CdS/CdTe solar cells with ZnTe/ZnTe:Cu buffer layers were fabricated and studied. The energy band structure of it was analyzed. The C-V, I-V characteristics and the spectral response show that the ZnTe/ZnTe:Cu buffer layers improve the back contact characteristic properties, the diode characteristics of the forward junction and the short-wave spectral response of the CdTe solar cells. The ZnTe/ZnTe:Cu buffer layers affect the solar cell conversion efficiency and its fill factor.

  7. Thermionic work function of /Cs/ZnO

    Science.gov (United States)

    Sommer, A. H.; Briere, T. R.

    1976-01-01

    The collector electrode of a thermionic converter requires a material having a low thermionic work function and chemical stability in a Cs atmosphere in the 800-K range. This letter reports that ZnO with an adsorbed Cs film meets these requirements. The work function is approximately 1.3 eV. Various methods of preparing the ZnO film are described as well as an experiment in which Cs was replaced by K.

  8. ZnTe/CdTe thin-film heterojunctions

    Directory of Open Access Journals (Sweden)

    M.M. Kolesnyk

    2009-01-01

    Full Text Available In this work we have studied the structural and electrophysical properties of the ZnTe/CdTe heterojunctions, obtained by the method of thermal evaporation in quasi-closed volume. Investigations allowed to define the films structural parameters, such as texture, lattice constant, sizes of grains and coherent-scattering domains, micro-deformation level, and their dependence on the conditions of films production as well. Electrophysical investigations allowed to define the charge-transport mechanism in heterojunction.

  9. Femtosecond response time measurements of a Cs2Te photocathode

    CERN Document Server

    Aryshev, A; Honda, Y; Terunuma, N; Urakawa, J

    2015-01-01

    We present the response time measurements of a Cs2Te photocathode illuminated with two 100 fs duration, variable time separation laser pulses at 266 nm wavelength. The response time was confirmed in dispersive region downstream of a 12-cell standing wave S-band acceleration structure using a well-known RF zero-crossing technique. At the same time it was also measured by changing mechanical path-length difference between two micro-bunches. Both methods agree that Cs2Te photocathode time response is of the order of 250 fs and thereby it is possible to generate and control a THz sequence of relativistic electron bunches by a conventional S-band RF gun. This result further opens a possibility to construct wide-range tunable THz FEL.

  10. Carrier dynamics and activation energy of CdTe/ZnTe nanostructures with different CdTe thicknesses

    Science.gov (United States)

    Han, Won Il; Lee, Ju Hyung; Choi, Jin Chul; Lee, Hong Seok

    2013-05-01

    We investigate the dimensional transition and optical properties of CdTe/ZnTe nanostructures with various CdTe thicknesses. The excitonic peak corresponding to the transitions from the ground electronic sub-band to the ground heavy-hole band in CdTe/ZnTe nanostructures shows different redshifts with increasing CdTe thickness due to variations in the dimensions of CdTe/ZnTe nanostructures. Time-resolved photoluminescence (PL) measurements used to study the carrier dynamics show that the decay time of 4.0 monolayer (ML) CdTe/ZnTe nanostructures is longer than that of CdTe/ZnTe nanostructures with different CdTe thicknesses. The activation energy of electrons confined in 4.0 ML CdTe/ZnTe nanostructures, as obtained from the temperature-dependent PL spectra, is higher than that of electrons confined in CdTe/ZnTe nanostructures with different CdTe thicknesses. These results indicate that the carrier dynamics and activation energy of CdTe/ZnTe nanostructures are affected by the thickness and dimensions of CdTe/ZnTe nanostructures.

  11. Stripe structure CdTe-CdZnTe-CdTe in a bulk single crystal

    Science.gov (United States)

    Azoulay, M.; Sinvani, M.; Mizrachi, M.; Feldstein, H.

    1994-03-01

    In this paper we present a study that was aimed at performing a selective diffusion of Zn into CdTe. A single crystal CdTe wafer fabricated into a "tooth-like" structure which was further subjected to high temperature annealing in the presence of Zn vapour. The sample was then cut parallel to the diffusion direction and a Zn concentration analysis, using an electron microprobe, was performed. As expected, the stripe structure CdTe-CdZnTe-CdTe has been confirmed. The Zn decay profiles were fitted to a modified diffusion model, suggesting a bulk diffusion mechanism coupled with a surface reaction. Practical implementation of this stripe structure for an infrared light waveguide is being evaluated.

  12. Intense white luminescence in ZnTe embedded porous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Melo, O. de; Melo, C. de [Physics Faculty, University of Havana, La Habana (Cuba); Santana, G. [Instituto de Investigaciones en Materiales, Universidad Nacional Autonoma de Mexico, Cd. Universtaria, A.P. 70-360, Coyoacan 04510 (Mexico); Santoyo, J.; Zelaya-Angel, O.; Mendoza-Alvarez, J. G. [Department of Physics, CINVESTAV, IPN (Mexico); Torres-Costa, V. [Departmento de Fisica Aplicada, Universidad Autonoma de Madrid, Cantoblanco, 28049 Madrid (Spain)

    2012-06-25

    Porous silicon layers were embedded with ZnTe using the isothermal close space sublimation technique. The presence of ZnTe was demonstrated using cross-sectional energy dispersive spectroscopy maps. ZnTe embedded samples present intense room temperature photoluminescence along the whole visible range. We ascribe this PL to ZnTe nanocrystals of different sizes grown on the internal pore surface. Such crystals, with different orientations and sizes, were observed in transmission electron microscopy images, while transmission electron diffraction images of the same regions reveal ZnTe characteristic patterns.

  13. Studies of the interaction of CS@ZnS:Mn with bovine serum albumin under illumination

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Li, E-mail: 2476625723@qq.com [Institute of Agricultural Quality Standards and Testing Technology Research, Hubei Academy of Agricultural Science, Wuhan 430064 (China); Xiao, Ling [School of Resource and Environmental Science, Hubei Biomass-Resource Chemistry and Environmental Biotechnology Key Laboratory, Wuhan University, Wuhan 430072 (China)

    2015-09-15

    Highlights: • The interaction and illumination damages of CS@ZnS:Mn D-dots to BSA were studied. • The quenching mechanism of CS@ZnS:Mn D-dots with BSA belongs to dynamic quenching. • The hydrophobic interaction plays a major role; the binding processes are spontaneous. • The FL enhancement of CS@ZnS:Mn D-dots by BSA under UV illumination was observed. • The probable mechanism is mainly a photo-induced free radical procedure. - Abstract: In this study, chitosan coated Mn-doped ZnS quantum dots (CS@ZnS:Mn D-dots) were obtained in aqueous media under ambient pressure. The interaction and illumination damages of CS@ZnS:Mn D-dots with bovine serum albumin (BSA) were studied by means of ultraviolet–visible (UV–vis) and fluorescence (FL) spectra. It was found that the FL of BSA was quenched by CS@ZnS:Mn D-dots. The dominating quenching mechanism of CS@ZnS:Mn D-dots with BSA belongs to dynamic quenching. Hydrophobic interaction plays a major role in the CS@ZnS:Mn–BSA interaction; binding processes are spontaneous. Influencing factors such as illumination time and CS@ZnS:Mn D-dots concentrations were considered. The FL quenching effect of BSA by CS@ZnS:Mn D-dots is enhanced with the increase of illumination time and CS@ZnS:Mn D-dots concentration. The FL enhancement of CS@ZnS:Mn D-dots by BSA under UV illumination was also observed. It was proved that, the interaction of CS@ZnS:Mn D-dots with BSA under UV illumination is mainly a result of a photo-induced free radical procedure. CS@ZnS:Mn D-dots may be used as photosensitizers in photodynamic therapy.

  14. Femtosecond response time measurements of a Cs2Te photocathode

    Science.gov (United States)

    Aryshev, A.; Shevelev, M.; Honda, Y.; Terunuma, N.; Urakawa, J.

    2017-07-01

    Success in design and construction of a compact, high-brightness accelerator system is strongly related to the production of ultra-short electron beams. Recently, the approach to generate short electron bunches or pre-bunched beams in RF guns directly illuminating a high quantum efficiency semiconductor photocathode with femtosecond laser pulses has become attractive. The measurements of the photocathode response time in this case are essential. With an approach of the interferometer-type pulse splitter deep integration into a commercial Ti:Sa laser system used for RF guns, it has become possible to generate pre-bunched electron beams and obtain continuously variable electron bunch separation. In combination with a well-known zero-phasing technique, it allows us to estimate the response time of the most commonly used Cs2Te photocathode. It was demonstrated that the peak-to-peak rms time response of Cs2Te is of the order of 370 fs, and thereby, it is possible to generate and control a THz sequence of relativistic electron bunches by a conventional S-band RF gun. This result can also be applied for investigation of other cathode materials and electron beam temporal shaping and further opens a possibility to construct wide-range tunable, table-top THz free electron laser.

  15. First observation of sol-gel derived Al:CsZnO/CsZnO bilayer thin film for solar cells application

    Science.gov (United States)

    Ahmadi, Mehdi; Rashidi Dafeh, Sajjad; Alinazmabadi, Saeid

    2016-10-01

    In this research, we fabricated CsZnO and Al:CsZnO/CsZnO bilayer thin films grown by the spin-coating-assisted sol-gel method on ITO substrate. The influence of diverse velocity of spin-coating (500, 1000, 1500, 2000, 2500 and 3000RPM) and also annealing times (30, 60, 90, 120, 150 and 180min) on the characteristics of the ZnO thin film was examined. The samples were examined by X-ray diffraction, scanning electron microscopy, Uv-Vis spectrometer and conductivity measurement. With the optimization of the velocity of spin-coating (2500RPM) and annealing times (60min), we fabricated Al:CsZnO/CsZnO bilayer thin films with diverse dopant concentration. By comparing the effect of dopant concentration with different dopant ratio (0, 0.5, 1.0 and 2%), 0.5% of CsZnO and Al:CsZnO/CsZnO bilayer was found as the most effective doping level with the best conductivity properties among the selected doping concentrations.

  16. CdTe and ZnTe metal interface formation and Fermi-level pinning

    Science.gov (United States)

    Wahi, A. K.; Carey, G. P.; Chiang, T. T.; Lindau, I.; Spicer, W. E.

    1989-01-01

    Interfacial morphology and Fermi-level pinning behavior at the interfaces of Al, Ag, and Pt with UHV-cleaved CdTe and ZnTe are studied using X-ray photoelectron and ultraviolet photoemission spectroscopies. Results are compared to metal/HgCdTe interface formation. For Al/CdTe, a case is found where significantly greater intermixing occurs in CdTe than seen on HgCdTe. The Al/ZnTe interface is also more abrupt than Al/CdTe. Band bending results for interfaces of all three metals with p-CdTe and p-ZnTe are presented and implications for metal/HgZnTe interface formation are considered.

  17. Pixelated CdZnTe drift detectors

    DEFF Research Database (Denmark)

    Kuvvetli, Irfan; Budtz-Jørgensen, Carl

    2005-01-01

    A technique, the so-called Drift Strip Method (DSM), for improving the CdZnTe detector energy response to hard X-rays and gamma-rays was applied as a pixel geometry. First tests have confirmed that this detector type provides excellent energy resolution and imaging performance. We specifically...... report on the performance of 3 mm thick prototype CZT drift pixel detectors fabricated using material from eV-products. We discuss issues associated with detector module performance. Characterization results obtained from several prototype drift pixel detectors are presented. Results of position...

  18. Monolithic ZnTe-based pillar microcavities containing CdTe quantum dots

    Science.gov (United States)

    Kruse, Carsten; Pacuski, Wojciech; Jakubczyk, Tomasz; Kobak, Jakub; Gaj, Jan A.; Frank, Kristian; Schowalter, Marco; Rosenauer, Andreas; Florian, Matthias; Jahnke, Frank; Hommel, Detlef

    2011-07-01

    Micropillars of different diameters have been prepared by focused ion beam milling out of a planar ZnTe-based cavity. The monolithic epitaxial structure, deposited on a GaAs substrate, contains CdTe quantum dots embedded in a ZnTe λ-cavity delimited by two distributed Bragg reflectors (DBRs). The high refractive index material of the DBR structure is ZnTe, while for the low index material a short-period triple MgTe/ZnTe/MgSe superlattice is used. The CdTe quantum dots are formed by a novel Zn-induced formation process and are investigated by scanning transmission electron microscopy. Micro-photoluminescence measurements show discrete optical modes for the pillars, in good agreement with calculations based on a vectorial transfer matrix method. The measured quality factor reaches a value of 3100.

  19. Monolithic ZnTe-based pillar microcavities containing CdTe quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Kruse, Carsten; Pacuski, Wojciech; Hommel, Detlef [Institute of Solid State Physics, Semiconductor Epitaxy, University of Bremen, PO Box 330 440, D-28334 Bremen (Germany); Jakubczyk, Tomasz; Kobak, Jakub; Gaj, Jan A [Institute of Experimental Physics, University of Warsaw, Hoza 69, PL-00-681 Warszawa (Poland); Frank, Kristian; Schowalter, Marco; Rosenauer, Andreas [Institute of Solid State Physics, Electron Microscopy, University of Bremen, PO Box 330 440, D-28334 Bremen (Germany); Florian, Matthias; Jahnke, Frank, E-mail: ckruse@ifp.uni-bremen.de [Institute of Theoretical Physics, University of Bremen, PO Box 330 440, D-28334 Bremen (Germany)

    2011-07-15

    Micropillars of different diameters have been prepared by focused ion beam milling out of a planar ZnTe-based cavity. The monolithic epitaxial structure, deposited on a GaAs substrate, contains CdTe quantum dots embedded in a ZnTe {lambda}-cavity delimited by two distributed Bragg reflectors (DBRs). The high refractive index material of the DBR structure is ZnTe, while for the low index material a short-period triple MgTe/ZnTe/MgSe superlattice is used. The CdTe quantum dots are formed by a novel Zn-induced formation process and are investigated by scanning transmission electron microscopy. Micro-photoluminescence measurements show discrete optical modes for the pillars, in good agreement with calculations based on a vectorial transfer matrix method. The measured quality factor reaches a value of 3100.

  20. Optical properties of ZnO/ZnS and ZnO/ZnTe heterostructures forphotovoltaic applications

    Energy Technology Data Exchange (ETDEWEB)

    Schrier, Joshua; Demchenko, Denis O.; Wang, Lin-Wang; Alivisatos,A. Paul

    2007-05-01

    Although ZnO and ZnS are abundant, stable, environmentallybenign, their band gap energies (3.44 eV, 3.72 eV) are too large foroptimal photovoltaic efficiency. By using band-corrected pseudopotentialdensity-functional theory calculations, we study how the band gap,opticalabsorption, and carrier localization canbe controlled by formingquantum-well like and nanowire-based heterostructures ofZnO/ZnS andZnO/ZnTe. In the case of ZnO/ZnS core/shell nanowires, which can besynthesized using existing methods, we obtain a band gap of 2.07 eV,which corresponds to a Shockley-Quiesser efficiency limitof 23 percent.Based on these nanowire results, we propose that ZnO/ZnScore/shellnanowires can be used as photovoltaic devices with organic polymersemiconductors as p-channel contacts.

  1. Effect of ZnTe and CdZnTe Alloys at the Back Contact of 1-μm-Thick CdTe Thin Film Solar Cells

    Science.gov (United States)

    Amin, Nowshad; Yamada, Akira; Konagai, Makoto

    2002-05-01

    N2-doped ZnTe was introduced onto 1-μm-thick CdTe absorbers in order to reduce the carrier recombination at the back contact of CdS/CdTe/C/Ag configuration solar cells. ZnTe films were grown by molecular beam epitaxy (MBE) on GaAs and Corning glass substrates to investigate the characteristics of the films. Epitaxial growth of ZnTe was realized on GaAs substrates and a hole concentration of 8 × 1018 cm-3 with a resistivity of 0.045 Ω \\cdotcm was achieved as a result of nitrogen doping. In contrast, polycrystalline ZnTe films were grown on Corning glass and CdTe thin films. Dark and photoconductivity of ZnTe films increased to 1.43 × 10-5 S/cm and 1.41 × 10-4 S/cm, respectively, while the Zn to Te ratio was decreased to 0.25 during MBE growth. These ZnTe films with different thicknesses were inserted into close-spaced sublimation (CSS)-grown 1-μm-thick CdTe solar cells. A conversion efficiency of 8.31% (Voc: 0.74 V, Jsc: 22.98 mA/cm2, FF: 0.49, area: 0.5 cm2) was achieved for a 0.2-μm-thick ZnTe layer with a cell configuration of CdS/CdTe/ZnTe/Cu-doped-C/Ag. Furthermore, to overcome the problem of possible recombination loss in the interface layer of CdTe and ZnTe, the intermediate ternary CdZnTe is investigated. The compositional factor in Cd1-xZnxTe:N alloy is varied and the dependence of the conductivity is evaluated. For instance, Cd0.5Zn0.5Te:N, with dark and photoconductivity of 2.13 × 10-6 and 2.9 × 10-5 S/cm, respectively, is inserted at the back contact of a 1-μm-thick CdTe solar cell. A conversion efficiency of 7.46% (Voc: 0.68 V, Jsc: 22.60 mA/cm2, FF: 0.49, area: 0.086 cm2) was achieved as the primary result for a 0.2-μm-thick Cd0.5Zn0.5Te:N layer with the cell configuration of CdS/CdTe/Cd0.5Zn0.5Te:N/Au.

  2. HgZnTe-based detectors for LWIR NASA applications

    Science.gov (United States)

    Patten, Elizabeth A.; Kalisher, Murray H.

    1990-01-01

    The initial goal was to grow and characterize HgZnTe and determine if it indeed had the advantageous properties that were predicted. Researchers grew both bulk and liquid phase epitaxial HgZnTe. It was determined that HgZnTe had the following properties: (1) microhardness at least 50 percent greater than HgCdTe of equivalent bandgap; (2) Hg annealing rates of at least 2 to 4 times longer than HgCdTe; and (3) higher Hg vacancy formation energies. This early work did not focus on one specific composition (x-value) of HgZnTe since NASA was interested in HgZnTe's potential for a variety of applications. Since the beginning of 1989, researchers have been concentrating, however, on the liquid phase growth of very long wavelength infrared (VLWIR) HgZnTe (cutoff approx. equals 17 microns at 65K) to address the requirements of the Earth Observing System (EOS). Since there are no device models to predict the advantages in reliability one can gain with increased microhardness, surface stability, etc., one must fabricate HgZnTe detectors and assess their relative bake stability (accelerated life test behavior) compared with HgCdTe devices fabricated in the same manner. Researchers chose to fabricate HIT detectors as a development vehicle for this program because high performance in the VLWIR has been demonstrated with HgCdTe HIT detectors and the HgCdTe HIT process should be applicable to HgZnTe. HIT detectors have a significant advantage for satellite applications since these devices dissipate much less power than conventional photoconductors to achieve the same responsivity.

  3. Effect of ZnTe/ZnTe:Cu complex back-contact on device characteristics of CdTe solar cells

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    ZnTe/ZnTe:Cu complex layers deposited by vacuum co-evaporation have been in- troduced to CdS/CdTe solar cells. The C-V and I-V curves have been investigated and the effects of un-doped ZnTe layer thickness as well as annealing temperatures on I-V characteristics of CdTe solar cells have been studied. The results show that the “roll over” and “cross over” phenomena of dark and light I-V curves can be eliminated by use of ZnTe/ZnTe:Cu layer and the fill factor for a typical sample has increased to 73%, where there is no high resistance transparent layer. The reasons have been discussed combined with the energy band diagram of CdTe solar cells.

  4. Phase diagrams and microscopic structures of (Hg,Cd)Te, (Hg,Zn)Te, and (Cd,Zn)Te alloys

    Science.gov (United States)

    Patrick, R. S.; Chen, A.-B.; Sher, A.; Berding, M. A.

    1988-01-01

    A cluster theory based on the quasi-chemical approximation has been applied to study the local correlation bond-length distribution, and phase diagrams of the II-VI pseudobinary alloys Hg(1 - x)Cd(x)Te, Hg(1 - x)Zn(x)Te, and Cd(1 - x)Zn(x)Te. The cluster energy is calculated by letting it relax in some effective alloy medium and then considering the contributions from the strain and chemical energies. Two different models are presented to simulate the alloy medium. While both models show that all three alloys have nearly random distributions, the signs of the local correlation prove to be sensitive to the alloy medium chosen for the energy calculation. Good agreement is found between experiment and the bond lengths and phase diagrams in both models.

  5. Isothermal close space sublimation of CdTe/ZnTe heterostructures in vacuum conditions

    Energy Technology Data Exchange (ETDEWEB)

    Melo, O. de; Garcia, B.J. [Departamento de Fisica Aplicada, Universidad Autonoma de Madrid. Cantoblanco 28049, Madrid (Spain); Sanchez, M. [Physics Faculty, IMRE, University of Havana, Colina Universitaria, 10400 La Habana (Cuba); Departamento de Fisica Aplicada, Universidad Autonoma de Madrid. Cantoblanco 28049, Madrid (Spain); Hernandez-Velez, M. [Departamento de Fisica Aplicada, Universidad Autonoma de Madrid. Cantoblanco 28049, Madrid (Spain); Unidad GMNF Asociada al CSIC, Cantoblanco 28049, Madrid (Spain)

    2010-06-15

    Thin films and structures of ZnTe and CdTe have been grown by isothermal close space sublimation using alternated exposure of single crystalline substrates to elemental Zn, Te and Cd sources. The results show that the use of vacuum conditions promotes the transport of vapors towards the surface and then efficient growth at lower temperatures. Films thickness ranged between 200 and 600 nm for 50 cycles samples. ZnTe and CdTe films were obtained even at temperatures as low as 310 C. This is important because low temperatures worsen the inter- diffusion processes; as a consequence we have obtained relatively abrupt interfaces in the ZnTe/CdTe system. Its compositional, structural and optical properties are presented. These results offer new possibilities of this low cost technique for growing heterostructures. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  6. Defect complexes formed with Ag atoms in CDTE, ZnTe, and ZnSe

    CERN Document Server

    Wolf, H; Ostheimer, V; Hamann, J; Lany, S; Wichert, T

    2000-01-01

    Using the radioactive acceptor $^{111}\\!$Ag for perturbed $\\gamma$-$\\gamma$-angular correlation (PAC) spectroscopy for the first time, defect complexes formed with Ag are investigated in the II-VI semiconductors CdTe, ZnTe and ZnSe. The donors In, Br and the Te-vacancy were found to passivate Ag acceptors in CdTe via pair formation, which was also observed in In-doped ZnTe. In undoped or Sb-doped CdTe and in undoped ZnSe, the PAC experiments indicate the compensation of Ag acceptors by the formation of double broken bond centres, which are characterised by an electric field gradient with an asymmetry parameter close to h = 1. Additionally, a very large electric field gradient was observed in CdTe, which is possibly connected with residual impurities.

  7. n-(CdMgTe/CdTe)/(p-(CdTe/ZnCdTe/ZnTe)/p-GaAs heterostructure diode for photosensor applications

    Science.gov (United States)

    Yahia, I. S.; AlFaify, S.; Abutalib, M. M.; Chusnutdinow, S.; Wojtowicz, T.; Karczewski, G.; Yakuphanoglu, F.; Al-Bassam, A.; El-Naggar, A. M.; El-Bashir, S. M.

    2016-05-01

    High quality n-(CdMgTe:I/n-CdTe:I)/(p-CdTe:N/p-ZnCdTe:N/p-ZnTe:N)/p-GaAs heterojunction diodes have been fabricated by molecular beam epitaxial growth. The illumination effect on the complex impedance and conductivity of heterostructure diode was investigated. The illumination intensities were taken up to the 200 mW/cm2 with frequency range of 42 Hz to 1 MHz. The observed real and imaginary parts of the complex impedance were strongly dependent on the illumination frequency. The inverse relation was observed between the illumination intensity and the complex impedance. The relaxation mechanism of the diode was analyzed by the Cole-Cole plots. The radius of the Cole-Cole curve decreases with increasing illumination intensity. This suggests a mechanism of illumination dependent on the relaxation process. It is also found that the conductivity increases linearly with increasing the illumination intensity. We can conclude that the new design heterostructure diode in our work is a good candidate in photodetector and optoelectronic applications.

  8. Numerical study of the influence of ZnTe thickness on CdS/ZnTe solar cell performance

    Science.gov (United States)

    Skhouni, Othmane; El Manouni, Ahmed; Mari, Bernabe; Ullah, Hanif

    2016-05-01

    At present most of II-VI semiconductor based solar cells use the CdTe material as an absorber film. The simulation of its performance is realized by means of various numerical modelling programs. We have modelled a solar cell based on zinc telluride (ZnTe) thin film as absorber in substitution to the CdTe material, which contains the cadmium element known by its toxicity. The performance of such photovoltaic device has been numerically simulated and the thickness of the absorber layer has been optimized to give the optimal conversion efficiency. A photovoltaic device consisting of a ZnTe layer as absorber, CdS as the buffer layer and ZnO as a window layer was modelled through Solar Cell Capacitance Simulator Software. Dark and illuminated I-V characteristics and the results for different output parameters of ZnO/CdS/ZnTe solar cell were analyzed. The effect of ZnTe absorber thickness on different main working parameters such as: open-circuit voltage Voc, short-circuit current density Jsc, fill factor FF, photovoltaic conversion efficiency η was intensely studied in order to optimize ZnTe film thickness. This study reveals that increasing the thickness of ZnTe absorber layer results in higher efficiency until a maximum value and then decreases slightly. This maximum was found to be 10% at ZnTe optimum thickness close to 2 µm. Contribution to the topical issue "Materials for Energy Harvesting, Conversion and Storage (ICOME 2015) - Elected submissions", edited by Jean-Michel Nunzi, Rachid Bennacer and Mohammed El Ganaoui

  9. Analysis of Etched CdZnTe Substrates

    Science.gov (United States)

    Benson, J. D.; Bubulac, L. O.; Jaime-Vasquez, M.; Lennon, C. M.; Arias, J. M.; Smith, P. J.; Jacobs, R. N.; Markunas, J. K.; Almeida, L. A.; Stoltz, A.; Wijewarnasuriya, P. S.; Peterson, J.; Reddy, M.; Jones, K.; Johnson, S. M.; Lofgreen, D. D.

    2016-09-01

    State-of-the-art as-received (112)B CdZnTe substrates have been examined for surface impurity contamination and polishing residue. Two 4 cm × 4 cm and one 6 cm × 6 cm (112)B state-of-the-art as-received CdZnTe wafers were analyzed. A maximum surface impurity concentration of Al = 1.7 × 1015 atoms cm-2, Si = 3.7 × 1013 atoms cm-2, Cl = 3.12 × 1015 atoms cm-2, S = 1.7 × 1014 atoms cm-2, P = 1.1 × 1014 atoms cm-2, Fe = 1.0 × 1013 atoms cm-2, Br = 1.2 × 1014 atoms cm-2, and Cu = 4 × 1012 atoms cm-2 was observed on the as-received CdZnTe wafers. CdZnTe particulates and residual SiO2 polishing grit were observed on the surface of the as-received (112)B CdZnTe substrates. The polishing grit/CdZnTe particulate density on CdZnTe wafers was observed to vary across a 6 cm × 6 cm wafer from ˜4 × 107 cm-2 to 2.5 × 108 cm-2. The surface impurity and damage layer of the (112)B CdZnTe wafers dictate that a molecular beam epitaxy (MBE) preparation etch is required. The contamination for one 4 cm × 4 cm and one 6 cm × 6 cm CdZnTe wafer after a standard MBE Br:methanol preparation etch procedure was also analyzed. A maximum surface impurity concentration of Al = 2.4 × 1015 atoms cm-2, Si = 4.0 × 1013 atoms cm-2, Cl = 7.5 × 1013 atoms cm-2, S = 4.4 × 1013 atoms cm-2, P = 9.8 × 1013 atoms cm-2, Fe = 1.0 × 1013 atoms cm-2, Br = 2.9 × 1014 atoms cm-2, and Cu = 5.2 × 1012 atoms cm-2 was observed on the MBE preparation-etched CdZnTe wafers. The MBE preparation-etched surface contamination consists of Cd(Zn)Te particles/flakes. No residual SiO2 polishing grit was observed on the (112)B surface.

  10. THz induced nonlinear absorption in ZnTe

    DEFF Research Database (Denmark)

    Pedersen, Pernille Klarskov; Jepsen, Peter Uhd

    2015-01-01

    Absorption spectra of ZnTe during strong-field THz interaction are investigated. Bleaching of the difference phonon modes below the fundamental TO mode is observed when field strengths higher than 4 MV/cm are applied.......Absorption spectra of ZnTe during strong-field THz interaction are investigated. Bleaching of the difference phonon modes below the fundamental TO mode is observed when field strengths higher than 4 MV/cm are applied....

  11. Analysis of CdS/CdTe devices incorporating a ZnTe:Cu/Ti Contact

    Energy Technology Data Exchange (ETDEWEB)

    Gessert, T.A. [National Renewable Energy Laboratory, 1617 Cole Blvd, Golden, Colorado 80401 (United States)]. E-mail: tim_gessert@nrel.gov; Asher, S. [National Renewable Energy Laboratory, 1617 Cole Blvd, Golden, Colorado 80401 (United States); Johnston, S. [National Renewable Energy Laboratory, 1617 Cole Blvd, Golden, Colorado 80401 (United States); Young, M. [National Renewable Energy Laboratory, 1617 Cole Blvd, Golden, Colorado 80401 (United States); Dippo, P. [National Renewable Energy Laboratory, 1617 Cole Blvd, Golden, Colorado 80401 (United States); Corwine, C. [National Renewable Energy Laboratory, 1617 Cole Blvd, Golden, Colorado 80401 (United States)

    2007-05-31

    High-performance CdS/CdTe photovoltaic devices can be produced using a ZnTe:Cu/Ti back contact deposited onto the CdTe layer. We observe that prolonged exposure of the ZnTe:Cu and Ti sputtering targets to an oxygen-containing plasma significantly reduces device open-circuit voltage and fill factor. High-resolution compositional analysis of these devices reveals that Cu concentration in the CdTe and CdS layers is lower for devices with poor performance. Capacitance-voltage analysis and related numerical simulations indicate that the net acceptor concentration in the CdTe is also lower for devices with poor performance. Photoluminescence analyses of the junction region reveal that the intensity of a luminescent peak associated with a defect complex involving interstitial Cu (Cu{sub i}) and oxygen on Te (O{sub Te}) is reduced in devices with poor performance. Combined with thermodynamic considerations, these results suggest that oxygen incorporation into the ZnTe:Cu sputtering target reduces the ability of sputtered ZnTe:Cu film to diffuse Cu into the CdTe.

  12. Chemical thermodynamics of Cs and Te fission product interactions in irradiated LMFBR mixed-oxide fuel pins

    Energy Technology Data Exchange (ETDEWEB)

    Adamson, M.G.; Aitken, E.A. (General Electric Co., Sunnyvale, CA (USA). Advanced Nuclear Technology Operation)

    1985-02-01

    A combination of fuel chemistry modelling and equilibrium thermodynamic calculations has been used to predict the atom ratios of Cs and Te fission products (Cs:Te) that find their way into the fuel-cladding interface region of irradiated stainless steel-clad mixed-oxide fast breeder reactor fuel pins. It has been concluded that the ratio of condensed, chemically-associated Cs and Te in the interface region, <Cs:Te), which in turn determines the Te activity, is controlled by an equilibrium reaction between Cs/sub 2/Te and the oxide fuel, and that the value of <Cs:Te) is, depending on fuel O:M, either equal to or slightly less than 2:1. Since Cs and Te fission products are both implicated as causative agents in FCCI (fission product-assisted inner surface attack of stainless steel cladding) and in FPLME (fission product-assisted liquid metal embrittlement of AISI-Type 316), the observed out-of-pile Cs:Te thresholds for FCCI (proportional4:1) and FPLME (proportional2:1) have been rationalized in terms of Cs:Te thermochemistry and phase equilibria. Also described in the paper is an updated chemical evolution model for reactive/volatile fission product behavior in irradiated oxide pins.

  13. TEM characterization of MBE grown CdTe/ZnTe axial nanowires.

    Science.gov (United States)

    Dłuzewski, P; Janik, E; Kret, S; Zaleszczyk, W; Tang, D; Karczewski, G; Wojtowicz, T

    2010-03-01

    CdTe/ZnTe axial nanowires were successfully fabricated by molecular beam epitaxy with the use of Au nano-catalysts and vapour-liquid-solid growth mechanism. Nanowires had zinc-blende structure with numerous stacking faults in the bottom ZnTe part and near perfect crystalline structure in the top CdTe part. Energy dispersive X-ray spectroscopy (EDXS) and lattice fringe spacing analysis revealed nonabrupt nature of hetero-interface, whose width was estimated to be 50-70 nm for the nanowires having a diameter in the range from 40 to 50 nm.

  14. Serendipitous syntheses of the series Cs 3Ln 7Te 12 (Ln = Sm, Gd, Tb): Compounds with large tunnels

    Science.gov (United States)

    Tougait, Olivier; Noël, Henri; Ibers, James A.

    2001-05-01

    Single crystals of Cs 3Ln 7Te 12 (Ln = Sm, Gd, Tb) have been grown accidentally through the reaction of Ln and Te with a CsCl or Cs 2Te 3 flux at elevated temperatures. The crystal structures have been determined from single crystal X-ray diffraction data. These compounds, which are isostructural with Rb 3Yb 7Se 12, crystallize in space group Pnnm of the orthorhombic system with two molecules in the following cells: Cs 3Sm 7Te 12, a=13.750(6), b=28.332(7), c=4.473(3) Å, T=293 K; Cs 3Gd 7Te 12, a=13.6064(13), b=28.209(3), c=4.4324(4) Å, T=153 K; Cs 3Tb 7Te 12, a=13.5708(16), b=28.116(3), c=4.4147(5) Å, T=153 K.

  15. Dispersion of the second-order nonlinear susceptibility in ZnTe, ZnSe, and ZnS

    DEFF Research Database (Denmark)

    Wagner, Hans Peter; Kühnelt, M.; Langbein, Wolfgang Werner

    1998-01-01

    We have measured the absolute values of the second-harmonic generation (SHG) coefficient \\d\\ for the zinc-blende II-VI semiconductors ZnTe, ZnSe, and ZnS at room temperature. The investigated spectral region of the fundamental radiation lambda(F) ranges from 520 to 1321 nm using various pulsed...

  16. Synthesis of near-infrared-emitting CdTe/CdSe/ZnSe/ZnS heterostructure.

    Science.gov (United States)

    Yang, Ping

    2014-04-01

    Near-infrared-emitting quantum dots (QDs) were fabricated via organic synthesis strategies through constructing CdTe/CdSe/ZnSe/ZnS multishell heterostructure. An effective shell-coating route was developed for multishell growth on CdTe cores. Core/shell growth was monitored by absorption and photoluminescence (PL) spectroscopy and transmission electron microscopy observation. Yellow emitting CdTe cores were coated with a CdSe shell to generate type II structure. This yields core/shell QDs with red photoluminescence. The passivation by the ZnSe shell having a substantially wide bandgap confines the excitons within the CdTe/CdSe interface and isolates them from the solution environment and consequently improves the stability of the heterostructure. An additional ZnS shell was deposited around the outer layer of CdTe/CdSe/ZnSe QDs to form a heterostructure through the reaction between zinc oleate and trioctylphosphine sulfur in the crude CdTe/CdSe/ZnSe solution. By varying CdTe core size and each shell thickness, the PL wavelength of the obtained heterostructure can span from 580 to 770 nm. The PL efficiency is quenched in CdTe QDs in diluted solution but increases substantially up to 24% for CdTe/CdSe core/shell QDs. The PL efficiency of CdTe/CdSe/ZnSe/ZnS QDs with average diameter of 5.4 nm and a PL peak wavelength of 770 nm is 20%.

  17. Dielectric function of ZnTe nanocrystals by spectroscopic ellipsometry

    Energy Technology Data Exchange (ETDEWEB)

    Ahmed, F; En Naciri, A; Johann, L [Universite Paul Verlaine-Metz, Laboratoire LPMD, 1 Boulevard Arago, 57078 Metz (France); Grob, J J [InESS, 23 rue du Loess-B20, 67037 Strasbourg Cedex2 (France); Stchakovsky, M, E-mail: ennacir@univ-metz.f [Horiba-Jobin Yvon, Z A de la Vigne-aux-loups, 5 Avenue Arago, 91380 Chilly-Mazarin Cedex (France)

    2009-07-29

    We have studied the optical properties of ZnTe nanocrystals (ZnTe-nc) by spectroscopic ellipsometry. The ZnTe-nc are embedded in a SiO{sub 2} matrix by an ion implantation technique. Two doses of 1 x 10{sup 16} and 5 x 10{sup 15} cm{sup -2} of tellurium and zinc ions are implanted in a 250 nm thick SiO{sub 2} layer thermally grown on silicon with respective implantation energies of 180 and 115 keV. Subsequent thermal treatments at 800 {sup 0}C lead to the formation of ZnTe-nc. Their sizes are characterized by transmission electron microscopy. The ZnTe-nc obtained with the 1 x 10{sup 16} cm{sup -2} dose are self-organized into two layers parallel to the surface. Their mean radius ranges between 4-17 nm and 7-17 nm. The ZnTe-nc obtained with the 5 x 10{sup 15} cm{sup -2} dose are self-organized into one layer with a mean radius between 4-17 nm. A critical points (CPs) dispersion model is used to extract the optical responses of the ZnTe-nc. The optical properties such as the dielectric function and the second derivative of the dielectric function are presented and analyzed. The dielectric function spectra reveal distinct structures attributed to band gap and optical transitions at higher energy. The correlation between the optical responses and the size of the nanocrystals is also given.

  18. Controlling electronic structure through epitaxial strain in ZnSe/ZnTe nano-heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Yadav, S. K., E-mail: syadav@lanl.gov, E-mail: yadav.satyesh@gmail.com [Materials Science and Engineering, University of Connecticut, Storrs, Connecticut 06269 (United States); Materials Science and Technology Division, MST-8, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States); Sharma, V.; Ramprasad, R. [Materials Science and Engineering, University of Connecticut, Storrs, Connecticut 06269 (United States)

    2015-07-07

    Using first-principles computations, we study the effect of epitaxial strains on electronic structure variations across ZnSe/ZnTe nano-heterostructures. Epitaxial strains of various types are modeled using pseudomorphic ZnSe/ZnTe heterostructures. We find that a wide range of band gaps (spanning the visible solar spectrum) and band offsets (0–1.5 eV) is accessible across the heterostructures in a controllable manner via reasonable levels of epitaxial strain. In addition to quantum confinement effects, strain in ZnSe/ZnTe heterostructures may thus be viewed as a powerful degree of freedom that can enable the rational design of optoelectronic devices.

  19. Polytypism in ZnS, ZnSe, and ZnTe: First-principles study

    KAUST Repository

    Boutaiba, F.

    2014-06-23

    We report results of first-principles calculations based on the projector augmented wave (PAW) method to explore the structural, thermodynamic, and electronic properties of cubic (3C) and hexagonal (6H, 4H, and 2H) polytypes of II-VI compounds: ZnS, ZnSe, and ZnTe. We find that the different bond stacking in II-VI polytypes remarkably influences the resulting physical properties. Furthermore, the degree of hexagonality is found to be useful to understand both the ground-state properties and the electronic structure of these compounds. The resulting lattice parameters, energetic stability, and characteristic band energies are in good agreement with available experimental data. Trends with hexagonality of the polytype are investigated.

  20. Characterization of single crystalline ZnTe and ZnSe grown by vapor phase transport

    Energy Technology Data Exchange (ETDEWEB)

    Trigubo, A B; Di Stefano, M C [FRBA-UTN, (1179) Buenos Aires (Argentina); Aguirre, M H [Dpto de Quim Inorg, Fac de Cs Quim, Univ Complutense, (28040) Madrid (Spain); Martinez, A M; D' Elia, R; Canepa, H; Heredia, E, E-mail: atrigubo@citefa.gov.a [CINSO-CITEFA: (1603) Villa Martelli, Pcia de Buenos Aires (Argentina)

    2009-05-01

    Tubular furnaces were designed and built to obtain single crystalline ZnTe and ZnSe ingots using respectively physical and chemical transport methods. Different temperature profiles and growth rates were analyzed in order to optimize the necessary crystalline quality for device development. Optical and scanning electron micrographs of the corrosion figures produced by chemical etching were used to obtain the dislocation density and the misorientation between adjacent subgrains in ZnTe and ZnSe wafers. Structural quality of the single crystalline material was determined by transmission electronic microscopy. Optical transmittance was measured by infrared transmission spectrometry and the resulting values were compared to commercial samples.

  1. Cs2Te normal conducting photocathodes in the superconducting rf gun

    CERN Document Server

    Xiang, R; Buettig, H; Janssen, D; Justus, M; Lehnert, U; Michel, P; Murcek, P; Schamlott, A; Schneider, Ch; Schurig, R; Staufenbiel, F; Teichert, J

    2010-01-01

    The superconducting radio frequency photoinjector (SRF gun) is one of the latest applications of superconducting rf technology in the accelerator field. Since superconducting photocathodes with high quantum efficiency are yet unavailable, normal conducting cathode material is the main choice for SRF photoinjectors. However, the compatibility between the photocathode and the cavity is one of the challenges for this concept. Recently, a SRF gun with Cs2Te cathode has been successfully operated in Forschungszentrum Dresden-Rossendorf. In this paper, we will present the physical properties of Cs2Te photocathodes in the SC cavity, such as the quantum efficiency, the lifetime, the rejuvenation, the charge saturation, and the dark current.

  2. Investigation of omnidirectional reflection band in ZnTe/ZnSe distributed Bragg reflector

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Ying-Shin [Department of Electrical Engineering, National Taiwan Ocean University, Keelung 20224, Taiwan (China); Hu, Sheng-Yao [Department of Digital Technology Design, Tungfang Design University, Kaohsiung 82941, Taiwan (China); Lee, Yueh-Chien, E-mail: jacklee@mail.tnu.edu.tw [Department of Electronic Engineering, Tungnan University, New Taipei City 22202, Taiwan (China); Chang, Chung-Cheng; Tiong, Kwong-Kau [Department of Electrical Engineering, National Taiwan Ocean University, Keelung 20224, Taiwan (China); Shen, Ji-Lin [Department of Physics, Chung Yuan Christian University, Chung-Li 32023, Taiwan (China); Chou, Wu-Ching [Department of Electrophysics, National Chiao Tung University, Hsinchu 30010, Taiwan (China)

    2015-11-15

    We report the characteristics of reflectance spectra of the 15- and 20-period ZnTe/ZnSe distributed Bragg reflector grown on GaAs (001) substrates by molecular beam epitaxy. The reflectance spectra measured at various incident angles and polarizations were investigated by the theoretical curves simulated using transfer matrix method. The wavelength variation of the refractive indices described by Sellmeier equation and random thickness model were also considered for the interpretation of the experimentally observed curves. An omnidirectional reflection range defined from the edge of incident-angle-dependent reflection band with TE and TM polarizations is about 15 nm, and is consistent with the observed experimental curves. The results showed that the selected ZnTe and ZnSe materials are suitable for constructing multilayer structures having omnidirectional reflection band. - Highlights: • ZnTe/ZnSe distributed Bragg reflector grown by molecular beam epitaxy. • The reflectance spectra are measured at various incidence angles and polarizations. • The theoretical curves are considered by Sellmeier and random thickness models. • An observed omnidirectional reflection range in ZnTe/ZnSe DBR is about 15 nm.

  3. Optical characterization of CdTe/ZnTe semiconductor wires and dots

    OpenAIRE

    Gourgon, C; Eriksson, B; Dang, L.; MARIETTE H.; Vieu, C.

    1993-01-01

    Arrays of wires and dots have been fabricated by electron beam lithography and Ar+ ion beam etching from CdTe/ZnTe quantum wells. Low temperature photoluminescence coming out from these structures is still observed for the smallest wires (40 nm) whereas for the dots, the detection limit occurs for lateral dimensions of 100 nm.

  4. CdZnTe Frisch collar detectors for {gamma}-ray spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Kargar, Alireza [S.M.A.R.T. Laboratory, Department of Mechanical and Nuclear Engineering, Kansas State University, Manhattan, KS 66506 (United States); Jones, Andrew M. [S.M.A.R.T. Laboratory, Department of Mechanical and Nuclear Engineering, Kansas State University, Manhattan, KS 66506 (United States); McNeil, Walter J. [S.M.A.R.T. Laboratory, Department of Mechanical and Nuclear Engineering, Kansas State University, Manhattan, KS 66506 (United States); Harrison, Mark J. [S.M.A.R.T. Laboratory, Department of Mechanical and Nuclear Engineering, Kansas State University, Manhattan, KS 66506 (United States); McGregor, Douglas S. [S.M.A.R.T. Laboratory, Department of Mechanical and Nuclear Engineering, Kansas State University, Manhattan, KS 66506 (United States)]. E-mail: mcgregor@ksu.edu

    2006-03-15

    Low-energy {gamma}-ray spectra were collected from {sup 241}Am, {sup 57}Co, {sup 133}Ba, {sup 198}Au, {sup 137}Cs and {sup 235}U using a 3.4x3.4x5.7 mm{sup 3} CdZnTe detector utilizing an insulated Frisch ring. The CdZnTe detector was fabricated from a single crystal and a copper shim was used as the Frisch collar. Room-temperature energy resolution of 1.45% full-width half-maximum (FWHM) was obtained for {sup 137}Cs at 661.7 keV without electronic correction. The detector fabrication process is described and the resulting energy spectra are discussed. The detector fabrication process is described and the resulting energy spectra are discussed. The detector full-energy-peak intrinsic efficiency is reported for different {gamma}-ray energies, specifically from {sup 241}Am, {sup 57}Co, {sup 133}Ba and {sup 137}Cs.

  5. Chemical thermodynamics of Cs and Te fission product interactions in irradiated LMFBR mixed-oxide fuel pins

    Science.gov (United States)

    Adamson, M. G.; Aitken, E. A.; Lindemer, T. B.

    1985-02-01

    A combination of fuel chemistry modelling and equilibrium thermodynamic calculations has been used to predict the atom ratios of Cs and Te fission products (Cs:Te) that find their way into the fuel-cladding interface region of irradiated stainless steel-clad mixed-oxide fast breeder reactor fuel pins. It has been concluded that the ratio of condensed, chemically-associated Cs and Te in the interface region,Čs:Te, which in turn determines the Te activity, is controlled by an equilibrium reaction between Cs 2Te and the oxide fuel, and that the value of Čs:Te is, depending on fuel 0:M, either equal to or slightly less than 2:1. Since Cs and Te fission products are both implicated as causative agents in FCCI (fission product-assisted inner surface attack of stainless steel cladding) and in FPLME (fission product-assisted liquid metal embrittlement of AISI-Type 316), the observed out-of-pile Cs:Te thresholds for FCCI (4˜:1) and FPLME (2˜:1) have been rationalized in terms of Cs:Te thermochemistry and phase equilibria. Also described in the paper is an updated chemical evolution model for reactive/volatile fission product behavior in irradiated oxide pins.

  6. A Quaternary ZnCdSeTe Nanotip Photodetector

    Directory of Open Access Journals (Sweden)

    Cheng YC

    2009-01-01

    Full Text Available Abstract The authors report the growth of needle-like high density quaternary Zn0.87Cd0.13Se0.98Te0.02nanotips on oxidized Si(100 substrate. It was found that average length and average diameter of the nanotips were 1.3 μm and 91 nm, respectively. It was also found that the as-grown ZnCdSeTe nanotips exhibit mixture of cubic zinc-blende and hexagonal wurtzite structures. Furthermore, it was found that the operation speeds of the fabricated ZnCdSeTe nanotip photodetector were fast with turn-on and turn-off time constants both less than 2 s.

  7. Optical properties of ZnSe(Te) with ytterbium impurity.

    Science.gov (United States)

    Makhniy, Viktor P; Horley, Paul P; Vorobiev, Yuri V; Kinzerska, Oksana V

    2016-04-20

    We report the results on infrared transmission measurements of non-doped and tellurium-doped crystals of zinc selenide grown from the melt. It was found that non-doped samples feature high transmission (50%-60%) for the wavelengths of 1-22 μm. The efficient scintillating crystals of ZnSe(Te) are almost opaque for λ>7  μm. Doping these samples with ytterbium from the gas phase does not achieve any significant transmission increase for non-doped ZnSe samples in the spectral range of 1-22 μm. However, it considerably increases (up to 50%) transmission for doped ZnSe(Te) at the wavelengths λ>10  μm. These optical peculiarities were analyzed taking into account restructurization of point defect ensembles created by Te and Yb impurities.

  8. Oxygen in sputter-deposited ZnTe thin films

    Energy Technology Data Exchange (ETDEWEB)

    Merita, S.; Kraemer, T.; Polity, A.; Meyer, B.K. [I. Physikalisches Institut, Justus-Liebig-Universitaet Giessen, Heinrich-Buff-Ring 16, 35392 Giessen (Germany); Mogwitz, B.; Franz, B. [Physikalisch-Chemisches Institut, Justus-Liebig-Universitaet Giessen, Heinrich-Buff-Ring 58, 35392 Giessen (Germany)

    2006-03-15

    Bandgap-bowing has been observed in many of the zinc-group-VI compounds, when the anion is substituted with an isovalent element. Recently new results on the ZnO{sub 1-x}S{sub x} and ZnO{sub 1-x}Se{sub x} system have been presented, but so far only one report on ZnO{sub 1-x}Te{sub x} is known. We examine the possibility of substituting tellurium by oxygen in sputter-deposited polycrystalline ZnTe thin-films and the effects on bandgap energy and crystal structure. A first approximation of the bowing curve with a lower limit of the bowing parameter of 2.7 eV is performed. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  9. Novel electrode geometry to improve performance of CdZnTe detectors

    DEFF Research Database (Denmark)

    van Pamelen, M.A.J.; Budtz-Jørgensen, Carl

    1998-01-01

    unipolar sensing. The effectiveness of the geometry was demonstrated with a CdZnTe crystal. Above X-ray energies of 40 keV, large improvements were achieved ill the spectral sensitivity, and the spectral resolution could be increased further by applying a correction for charge trapping. The peak of Cs-137......A novel electrode geometry to improve the sensitivity to single-polarity charge carriers in ionization detectors is presented. The electrode geometry is based on the same principle as Frisch grids in gas detectors. It reduces the sensitivity to one type of charge carrier, making the detector almost...

  10. Synthesis and Characterization of ZnTe Hierarchical Nanostructures

    Directory of Open Access Journals (Sweden)

    Baohua Zhang

    2012-01-01

    Full Text Available Single-crystalline ZnTe hierarchical nanostructures have been successfully synthesized by a simple thermal evaporation technology. The as-prepared products were characterized with X-ray diffraction (XRD, scanning electron microcopy (SEM, transmission electron microscope (TEM, and photoluminescence spectrum (PL. These results showed that the ZnTe hierarchical nanostructures consisted of nanowires and nanolumps. The room temperature PL spectrum exhibited a pure green luminescence centered at 545nm. The growth mechanism of hierarchical nanostructure was also discussed.

  11. Leakage current measurements on pixelated CdZnTe detectors

    NARCIS (Netherlands)

    Dirks, B.P.F.; Blondel, C.; Daly, F.; Gevin, O.; Limousin, O.; Lugiez, F.

    2006-01-01

    In the field of the R&D of a new generation hard X-ray cameras for space applications we focus on the use of pixelated CdTe or CdZnTe semiconductor detectors. They are covered with 64 (0.9×0.9 mm2) or 256 (0.5×0.5 mm2) pixels, surrounded by a guard ring and operate in the energy ranging from several

  12. Angular response of a W-collimated room-temperature-operated CdZnTe Frisch collar spectrometer

    Energy Technology Data Exchange (ETDEWEB)

    Kargar, Alireza [S.M.A.R.T. Laboratory, Department of Mechanical and Nuclear Engineering, Kansas State University, Manhattan, KS 66506 (United States); Jones, Andrew M. [S.M.A.R.T. Laboratory, Department of Mechanical and Nuclear Engineering, Kansas State University, Manhattan, KS 66506 (United States); McNeil, Walter J. [S.M.A.R.T. Laboratory, Department of Mechanical and Nuclear Engineering, Kansas State University, Manhattan, KS 66506 (United States); Harrison, Mark J. [S.M.A.R.T. Laboratory, Department of Mechanical and Nuclear Engineering, Kansas State University, Manhattan, KS 66506 (United States); McGregor, Douglas S. [S.M.A.R.T. Laboratory, Department of Mechanical and Nuclear Engineering, Kansas State University, Manhattan, KS 66506 (United States)]. E-mail: mcgregor@ksu.edu

    2006-06-15

    The spatial resolution of a collimated CdZnTe Frisch collar detector was experimentally investigated for two different tungsten collimator designs using a {sup 198}Au gamma-ray source at 412 keV. A two-dimensional model for the detector-collimator-source geometry was developed and applied with some simplifying assumptions. The CdZnTe detector was fabricated from a single crystal using a copper shim as the Frisch collar. The detector fabrication process is briefly described. Pulse height spectra were collected from {sup 241}Am, {sup 198}Au and {sup 137}Cs using a 3.4x3.4x5.8 mm{sup 3} CdZnTe detector utilizing an insulated Frisch collar mounted inside a tungsten collimator. The resulting energy spectra are presented. Room-temperature energy resolution of 1.72% full-width at half-maximum (FWHM) was obtained for {sup 137}Cs at 662 keV without electronic correction. The two-dimensional model reasonably predicts the angular response of the CdZnTe detectors when inserted into two different collimators.

  13. Electronic structure and optical properties of Cu-doping and Zn vacancy impurities in ZnTe.

    Science.gov (United States)

    Li, Qing-Fang; Hu, Ge; She, Qing; Yao, Jing; Feng, Wen-Jiang

    2013-09-01

    The geometric structures of perfect ZnTe, that with Zn vacancy (Zn0.875Te), and Cu-doped ZnTe (Zn0.875Cu0.125Te) were optimized using the pseudopotential plane wave (PP-PW) method based on the density functional theory (DFT) within generalized gradient approximation (GGA). The cohesive energy, band structure, density of states, and Mulliken populations were calculated and discussed in detail. On the other hand, an accurate calculation of linear optical functions (the dielectric function, refraction index, reflectivity, conductivity function, and energy-loss spectrum) was performed. The results demonstrated that compared to the perfect ZnTe, the lattice parameters of Zn0.875Te and Zn0.875Cu0.125Te were changed and the cell volumes decreased to some extent due to the vacancy and introduction of impurity. A vacancy acceptor level and an acceptor impurity level were produced in Zn0.875Te and Zn0.875Cu0.125Te, respectively. By comparison, Cu doping in the ZnTe system is relatively stable while the monovacancy system is not.

  14. Heavy-Metal-Free Fluorescent ZnTe/ZnSe Nanodumbbells.

    Science.gov (United States)

    Ji, Botao; Panfil, Yossef E; Banin, Uri

    2017-07-25

    For visible range emitting particles, which are relevant for display and additional applications, Cd-chalcogenide nanocrystals have reached the highest degree of control and performance. Considering potential toxicity and regulatory limitations, there is a challenge to successfully develop Cd-free emitting nanocrystals and, in particular, heterostructures with desirable properties. Herein, we report a colloidal synthesis of fluorescent heavy-metal-free Zn-chalcogenide semiconductor nanodumbbells (NDBs), in which ZnSe tips were selectively grown on the apexes of ZnTe rods, as evidenced by a variety of methods. The fluorescence of the NDBs can be tuned between ∼500 and 585 nm by changing the ZnSe tip size. The emission quantum yield can be greatly increased through chloride surface treatment and reaches more than 30%. Simulations within an effective-mass-based model show that the hole wave function is spread over the ZnTe nanorods, while the electron wave function is localized on the ZnSe tips. Quantitative agreement for the red-shifted emission wavelength is obtained between the simulations and the experiments. Additionally, the changes in radiative lifetimes correlate well with the calculated decrease in electron-hole overlap upon growth of larger ZnSe tips. The heavy-metal-free ZnTe/ZnSe NDBs may be relevant for optoelectronic applications such as displays or light-emitting diodes.

  15. Deposition of polycrystalline Cd{sub 1-x}Zn{sub x} Te films on ZnTe/graphite and graphite substrates by close-spaced sublimation

    Energy Technology Data Exchange (ETDEWEB)

    Okamoto, Tamotsu; Akiba, Sho; Takahashi, Kohei; Nagatsuka, Satsuki; Kanda, Yohei [Department of Electrical and Electronic Engineering, Kisarazu National College of Technology, 2-11-1 Kiyomidai-higashi, Kisarazu, Chiba 292-0041 (Japan); Tokuda, Satoshi; Kishihara, Hiroyuki; Sato, Toshiyuki [Technology Research Laboratory, Shimadzu Corporation, 3-9-4 Hikaridai, Seika-cho, Soraku-gun, Kyoto 619-0237 (Japan)

    2014-07-15

    The effects of a ZnTe layer on the deposition of a Cd{sub 1-x}Zn{sub x}Te (CZT) layer in the initial stage of the close-spaced sublimation (CSS) deposition were investigated. The deposition rate was almost constant in the initial stage of the CdTe deposition on the ZnTe/graphite substrates. However, the deposition rate within 1 minute was lower than that after 1 minute in the CdTe deposition on graphite substrates. This result suggests that nucleation of CdTe directly deposited on graphite substrate is difficult when compared to that with a ZnTe layer. Furthermore, the effects of CdCl{sub 2} and ZnTe additions to the CdTe sources in the CSS deposition were also investigated. Both the grain size and the intensity of donor-acceptor pair (DAP) emission in photoluminescence (PL) spectra were decreased by the effect of CdCl{sub 2} addition. Zn content in CZT films was controlled by the ZnTe ratio in the CdTe/ZnTe powder sources. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  16. Spin dynamics of ZnSe-ZnTe nanostructures grown by migration enhanced molecular beam epitaxy

    Science.gov (United States)

    Deligiannakis, Vasilios; Dhomkar, Siddharth; Ji, Haojie; Pagliero, Daniela; Kuskovsky, Igor L.; Meriles, Carlos A.; Tamargo, Maria C.

    2017-03-01

    We study the spin dynamics of ZnSe layers with embedded type-II ZnTe quantum dots using time resolved Kerr rotation (TRKR). Three samples were grown with an increasing amount of Te, which correlates with increased quantum dot (QD) density. Samples with a higher quantum dot density exhibit longer electron spin lifetimes, up to ˜1 ns at low temperatures. Tellurium isoelectronic centers, which form in the ZnSe spacer regions as a result of the growth conditions, were probed via spectrally dependent TRKR. Temperature dependent TRKR results show that samples with high QD density are not affected by an electron-hole exchange dephasing mechanism.

  17. Red bayberry-like ZnTe microstructures: Controlled synthesis, growth mechanism and enhanced photocatalytic performance

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Xiao-Ping; Gu, Jie [Department of Physics, Zhejiang Sci-Tech University, Hangzhou 310018 (China); Zhou, Shao-Min [Key Lab for Special Functional Materials of Ministry of Education, Henan University, Kaifeng 475004 (China); Li, Xiao-Yun; Wang, Shun-Li; Jin, Li; Chen, Hui [Department of Physics, Zhejiang Sci-Tech University, Hangzhou 310018 (China); Shi, Jian-Jun, E-mail: jjshi61@126.com [Department of Physics, Zhejiang Sci-Tech University, Hangzhou 310018 (China)

    2015-04-05

    Graphical abstract: Different ZnTe microstructures with controllable morphologies were synthesized via a facile NaOH-mediated solvothermal menthod. The as-obtained Red bayberry-like ZnTe microstructures possessed remarkable photocatalytic capability reached up to about 90%. - Highlights: • For the first time, Red bayberry-like ZnTe is successful fabricated. • ZnTe microstructures with controllable morphology were synthesized. • NaOH played significant roles in the fabrication of Red bayberry-like ZnTe. • Red bayberry-like ZnTe exhibited remarkable photocatalytic activities. - Abstract: Uniform Red bayberry-like ZnTe microstructures have been synthesized by a facile solvothermal method. The effects of synthetic conditions, such as the amount of NaOH, the zinc source and reaction time were investigated. The results showed that the morphology of the ZnTe microstructures can be controlled by altering the concentration of NaOH. The growth mechanism of Red bayberry-like ZnTe microstructures was as follows: At the initial stage, the decomposition of Na{sub 2}TeO{sub 3} generates Te nucleus. Trigonal tellurium has a highly anisotropic crystal structure consisting of helical chains of covalently bound atoms, thus resulting in Te nanowires are firstly formed in the reaction. Subsequently, the Te nanowires were reduced by CH{sub 3}CHO generated from ethylene glycol, meanwhile the generated Te{sup 2−} ions combined with Zn{sup 2+} ions generates ZnTe nucleus, finally forming Red bayberry-like ZnTe. When used as a catalytic of organic pollutants, the as-obtained Red bayberry-like ZnTe showed strong photocatalytic capability reached up to about 90%. The high photocatalytic activities of the Red bayberry-like ZnTe would have a potential photocatalytic application in environmental purification.

  18. Pathways toward higher performance CdS/CdTe devices: Te exposure of CdTe surface before ZnTe:Cu/Ti contacting

    Energy Technology Data Exchange (ETDEWEB)

    Gessert, T.A., E-mail: tim.gessert@nrel.gov; Burst, J.M.; Wei, S.-H.; Ma, J.; Kuciauskas, D.; Rance, W.L.; Barnes, T.M.; Duenow, J.N.; Reese, M.O.; Li, J.V.; Young, M.R.; Dippo, P.

    2013-05-01

    Many studies of thin-film CdS/CdTe photovoltaic devices have suggested that performance may be improved by reducing recombination due to Te-vacancy (V{sub Te}), Te antisite (Te{sub Cd}), or Te-interstitial (Te{sub i}) defects. Although formation of these intrinsic defects is likely influenced by CdTe deposition parameters, it may be also coupled to the formation of beneficial cadmium vacancy (V{sub Cd}) defects. In this study, we expose the CdTe surface to Te vapor prior to ZnTe:Cu/Ti contact-interface formation with the goal of reducing V{sub Te} without significantly reducing V{sub Cd}. Initial results show that when this modified contact is used on a CdCl{sub 2}-treated CdS/CdTe device, poorer device performance results. This suggests two things: First, the amount of free-Te available during contact formation (either from chemical etching or Cu{sub x}Te or ZnTe deposition) may be a more important parameter to device performance than previously appreciated. Second, if processes have been used to reduce the effect of V{sub Te} (e.g., oxygen and chlorine additions), adding even a small amount of Te may produce detrimental defects. - Highlights: ► Te exposure of CdS/CdTe back contact reduces device performance. ► Field strength and minority carrier lifetime reduced. ► Calculations suggest formation of Te on Cd antisite defect.

  19. Electronic structure and band alignments of ZnTe/CrTe(0 0 1), CdSe/CrTe(0 0 1) and CdTe/CrTe(0 0 1) interfaces

    Indian Academy of Sciences (India)

    F Ahmadian; R Zare

    2011-08-01

    All-electron full potential calculations based on spin density functional theory were performed to study cubic zincblende (ZB) and hexagonal NiAs structures of bulk CrTe and ZnTe/CrTe(0 0 1), CdTe/CrTe(0 0 1) and CdSe/CrTe(0 0 1) interfaces. The lattice mismatch effect in ZB CrTe and magnetic properties of CrTe in the ideal ZB CrTe structure were investigated. The band alignment properties of the ZnTe/CrTe(0 0 1), CdTe/CrTe(0 0 1) and CdSe/CrTe(0 0 1) interfaces were computed and a rather large minority valence band offset of about 1.09 eV was observed in ZnTe/CrTe(0 0 1) heterojunction. Also in the CdTe/CrTe(0 0 1) and CdSe/CrTe(0 0 1) interfaces, the conduction band minimum of minority spin in CrTe was above the conduction band minimum of CdTe and CdSe and so the majority spin electrons could be directly injected to both semiconductors, indicating the possibility of highly efficient spin injection into the CdSe and CdTe semiconductors.

  20. Zinc segregation in CdZnTe grown under Cd/Zn partial pressure control

    Science.gov (United States)

    Azoulay, M.; Rotter, S.; Gafni, G.; Tenne, R.; Roth, M.

    1992-02-01

    CdZnTe crystals have been grown by the modified vertical gradient freeze (VGF) method. Growth atmosphere control has been introduced to compensate for the Zn depletion in the melt during solidification. The axial Zn concentration in the grown crystals is found to be uniform within ±3%, as evaluated by X-ray diffraction and electron microprobe analysis. The radial segregation of Zn is minimal and does not exceed the experimental error due to the nearly planar interface achieved. Zinc microsegregation has been studied as well and is discussed in terms of the temporal variations of the solute concentration at the growth interface.

  1. High performance p-i-n CdTe and CdZnTe detectors

    CERN Document Server

    Khusainov, A K; Ilves, A G; Morozov, V F; Pustovoit, A K; Arlt, R D

    1999-01-01

    A breakthrough in the performance of p-i-n CdTe and CdZnTe detectors is reported. The detector stability has been significantly improved, allowing their use in precise gamma and XRF applications. Detectors with energy resolution close to Si and Ge were produced operating with only -30--35 deg. C cooling (by a Peltier cooler of 15x15x10 mm size and a consumed power less than 5 W). Presently detectors with volume of up to 300 mm sup 3 are available. In terms of photoelectric effect efficiency it corresponds to HPGe detectors with volumes of about 1.5 cm sup 3. The possibilities of further improvement of CdTe and CdZnTe detector characteristics are discussed in this paper.

  2. Effect of Cu doping on the properties of ZnTe:Cu thin films and CdS/CdTe/ZnTe solar cells

    Science.gov (United States)

    Tang, J.; Mao, D.; Trefny, J. U.

    1997-02-01

    The effects of Cu doping concentration and post-deposition annealing treatment on the properties of ZnTe thin films were investigated in an effort to decrease the Cu doping concentration and improve the long-term stability of CdS/CdTe/ZnTe solar cells. The structural, compositional, and electrical properties were studied systematically using x-ray diffraction (XRD), electron microprobe, Hall effect and conductivity measurements. XRD measurements indicated that the crystalline phase of as-deposited and low-temperature annealed ZnTe films is dependent on Cu doping concentration. Low-Cu-doped films exhibited zincblende phase, whereas high-Cu-doped films showed wurtzite phase. After annealing at high temperature (⩾350 °C), all films exhibited zincblende structure. Electron probe microanalysis revealed a deficiency of cations in low-Cu-doped films and an excess of cations in high-Cu-doped films. Hall effect measurements revealed a dependence of hole mobility on Cu doping concentration with the highest mobility (20 cm2/Vṡs) obtained at a low Cu concentration. Carrier concentrations higher than mid-1016cm-3 were obtained at a Cu concentration of 2 at. % and relatively low annealing temperatures. Studies of the activation energy of dark conductivity suggested that intrinsic defects (e.g., Zn vacancies) are the dominant acceptors for Cu concentrations lower than 4.5 at. %. Finally, ZnTe films with Cu concentrations as low as 1 at. % were used successfully as a back contact layer in CdTe based solar cells. Fill factors over 0.70 were obtained using ZnTe films of low Cu concentrations.

  3. Type-II excitons in ZnTe/ZnSe quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Andre, Regis; Najjar, Rita; Besombes, Lucien; Bougerol, Catherine; Tatarenko, Serge; Mariette, Henri [CEA-CNRS group ' ' Nanophysique et Semiconducteurs' ' , Institut Neel-CNRS, Grenoble (France)

    2009-04-15

    We present the photoluminescence and time resolved photoluminescence properties of an ensemble of ZnTe quantum dots embedded in a ZnSe matrix. Those heterostructures exhibit a type-II band alignment with holes confined within the dots and electrons kept in the close vicinity of the dots by coulomb attraction. We show that the structural and optical features of the samples, grown by molecular beam epitaxy, are highly sensitive to the growth conditions. Depending on the Se to Zn flux ratio, the ZnTe islands can disappear and lead to a thin 2D quantum well, or be preserved and localize excitons, as evidenced by photoluminescence experiments. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  4. Point Defect Characterization in CdZnTe

    Energy Technology Data Exchange (ETDEWEB)

    Gul,R.; Li, Z.; Bolotnikov, A.; Keeter, K.; Rodriguez, R.; James, R.

    2009-03-24

    Measurements of the defect levels and performance testing of CdZnTe detectors were performed by means of Current Deep Level Transient Spectroscopy (I-DLTS), Transient Charge Technique (TCT), Current versus Voltage measurements (I-V), and gamma-ray spectroscopy. CdZnTe crystals were acquired from different commercial vendors and characterized for their point defects. I-DLTS studies included measurements of defect parameters such as energy levels in the band gap, carrier capture cross sections, and defect densities. The induced current due to laser-generated carriers was measured using TCT. The data were used to determine the transport properties of the detectors under study. A good correlation was found between the point defects in the detectors and their performance.

  5. Optical properties and surface morphology of ZnTe thin films prepared by multiple potential steps

    Energy Technology Data Exchange (ETDEWEB)

    Gromboni, Murilo F.; Lucas, Francisco W. S.; Mascaro, Lucia H., E-mail: lmascaro@ufscar.br [Universidade de Federal de Sao Carlos (LIEC/UFSCar), SP (Brazil). Departamento de Quimica. Lab. de Eletroquimica e Ceramica

    2014-03-15

    In this work, the ZnTe thin films were electrodeposited using potentiostatic steps, on Pt substrate. The effect of steps number, the deposition time for each element (Zn or Te) and layer order (Zn/Te or Te/Zn) in the morphology, composition, band gap energy and photocurrent was evaluated. Microanalysis data showed that the ratio Zn/Te ranged from 0.12 and 0.30 and the film was not stoichiometric. However, the band-gap value obtained from in all experimental conditions used in this work was 2.28 eV, indicating film growth of ZnTe. The samples with higher Zn showed higher photocurrent, which was of the order of 2.64 μA cm{sup -2} and dendritic morphology (author)

  6. Elaboration and optical properties of type-II ZnTe on ZnSe heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Najjar, Rita, E-mail: rita.najjar@cea.f [CEA-CNRS group ' Nanophysique et semiconducteurs' , Institut NEEL-CNRS, BP166, 25 rue des martyrs, 38042 Grenoble Cedex 9 (France); Andre, Regis; Besombes, Lucien; Bougerol, Catherine; Tatarenko, Serge; Mariette, Henri [CEA-CNRS group ' Nanophysique et semiconducteurs' , Institut NEEL-CNRS, BP166, 25 rue des martyrs, 38042 Grenoble Cedex 9 (France)

    2009-11-25

    Special growth conditions are presented in this work, in order to produce ZnTe/ZnSe type-II quantum dots and preserve them during the capping stage. A detailed study emphasizes the high sensitivity of the sample structure to Se/Zn ratio as opposed to other growth parameters. It is shown that nominally identical samples can evolve into two-dimensional quantum well or quantum dot plane, depending on which element is in excess. Transmission electron microscopy, atomic force microscopy and optical characterizations evidence this phenomenon.

  7. CdZnTe Background Measurement at Balloon Altitudes

    CERN Document Server

    Bloser, P F; Narita, T; Harrison, F

    1998-01-01

    We report results of an experiment conducted in May 1997 to measure CdZnTe background and background reduction schemes in space flight conditions similar to those of proposed hard X-ray astrophysics missions. A 1 cm^2 CdZnTe detector was placed adjacent to a thick BGO anticoincidence shield and flown piggybacked onto the EXITE2 scientific balloon payload. The planar shield was designed to veto background countsproduced by local gamma-ray production in passive material and neutron interactions in the detector. The CdZnTe and BGO were partially surrounded by a Pb-Sn-Cu shield to approximate the grammage of an X-ray collimator, although the field of view was still ~2 pi sr. At an altitude of 127000 feet we find a reduction in background by a factor of 6 at 100 keV. The non-vetoed background is 9 X 10^{-4} cts /cm^2-sec-keV at 100 keV, about a factor of 2 higher than that of the collimated (4.5 deg FWHM) EXITE2 phoswich detector. We compare our recorded spectrum with that expected from simulations using GEANT and...

  8. Thermal conductivity studies of CdZnTe with varying Te excess

    Science.gov (United States)

    Jackson, Maxx; Bennett, Brittany; Giltnane, Dustin; Babalola, Stephen; Ohmes, Martin F.; Stowe, A. C.

    2016-09-01

    Cadmium Zine Telluride (CZT) has been extensively studied as a room temperature semiconductor gamma radiation detector. CZT continues to show promise as a bulk and pixelated gamma spectrometer with less than one percent energy resolution; however the fabrication costs are high. Improved yields of high quality, large CZT spectroscopy grade crystals must be achieved. CZT is grown by the Traveling Heater Method (THM) with a Te overpressure to account for vaporization losses. This procedure creates Te rich zones. During growth, boules will often cleave limiting the number of harvestable crystals. As a result, crystal growth parameter optimization was evaluated by modeling the heat flow within the system. Interestingly, Cadmium Telluride (CdTe) is used as a thermal conductivity surrogate in the absence of a thorough study of the CZT thermal properties. The current study has measured the thermal conductivity of CZT pressed powders with varying Te concentrations from 50-100% over 25-800°C to understand the variation in this parameter from CdTe. Cd0.9Zn0.1Te1.0 is the base CZT (designated 50%). CZT exhibits a thermal conductivity of nearly 1 W/mK, an order of magnitude greater than CdTe. Further, the thermal conductivity decreased with increasing Te concentration.

  9. RF Sputtered ZnTe:N as CdS/CdTe Solar Cell Back-Contact Material

    Science.gov (United States)

    Ma, X.

    1999-04-01

    The most frequently used electrical contact to CdTe thin-film polycrystalline solar cells on glass involves the use of copper. However, Cu is known to be a fast diffuser in many semiconductors and is suspected of leading to some deterioration of performance of CdTe solar cells under extreme conditions. In this work we report on the development of a reactively sputtered ZnTe:N back contact on solar cells. Promising low-resistive nitrogen-doped ZnTe films were obtained. Efficiencies up to 10.8 percent were obtained for solar cells fabricated with a ZnTe:N/Au back contact scheme. Comparison of cell performances using ZnTe:N and Cu/Au back-contacts is presented.

  10. CdTe and CdZnTe crystals for room temperature gamma-ray detectors

    CERN Document Server

    Franc, J; Belas, E; Grill, R; Hlidek, P; Moravec, P; Bok, J B

    1999-01-01

    CdTe(Cl) detectors from CdTe single crystals, grown by the Bridgman method from Te-rich melt, were fabricated. The quality of the detectors was tested with sup 5 sup 7 Co and sup 2 sup 4 sup 1 Am sources. In the sup 5 sup 7 Co spectrum low noise is demonstrated by the presence of a 14 keV peak and good resolution approx 7 keV (FWHM) evident from the separation of 122 and 136 keV peaks. A review is given of the state-of-the-art properties of (CdZn)Te single crystals prepared for substrates in the Institute of Physics of Charles University. The quality of samples is tested by measurements of the diffusion length of minority carriers, from which the mobility-lifetime product is evaluated. (author)

  11. Correction of diagnostic x-ray spectra measured with CdTe and CdZnTe detectors

    Energy Technology Data Exchange (ETDEWEB)

    Matsumoto, M. [Osaka Univ., Suita (Japan). Medical School; Kanamori, H.; Toragaito, T.; Taniguchi, A.

    1996-07-01

    We modified the formula of stripping procedure presented by E. Di. Castor et al. We added the Compton scattering and separated K{sub {alpha}} radiation of Cd and Te (23 and 27keV, respectively). Using the new stripping procedure diagnostic x-ray spectra (object 4mm-Al) of tube voltage 50kV to 100kV for CdTe and CdZnTe detectors are corrected with comparison of those spectra for the Ge detector. The corrected spectra for CdTe and CdZnTe detectors coincide with those for Ge detector at lower tube voltage than 70kV. But the corrected spectra at higher tube voltage than 70kV do not coincide with those for Ge detector. The reason is incomplete correction for full energy peak efficiencies of real CdTe and CdZnTe detectors. (J.P.N.)

  12. Growth and characterization of Cd1-xZnxTe/ZnO heterostructures from furnace-annealed CdTe/Zn multi-stacks

    Science.gov (United States)

    Chakraborty, Monisha; Bhattacharyya, Sugata

    2015-10-01

    Cd1-xZnxTe/ZnO hetero-structures were grown on glass substrates by furnace annealing of stack-deposited CdTe/Zn/CdTe/Zn thin film multi-layers in air. The multilayered structures were annealed in furnace at various temperatures in between 350 and 600 °C. XRD results revealed that while growth of Cd1-xZnxTe compound reached saturation by 500 °C, ZnO growth geared up in between 550 and 600 °C. The band-gap values of the composite structures were less than either standard Cd1-xZnxTe or ZnO. It was because of large presence of free Zn and Cd and staggered type-II band alignment. An exponential growth was observed for the Cd1-xZnxTe particle sizes against annealing temperature. Next SEM images showed reduced surface granularity with increasing Zn percentage in Cd1-xZnxTe. SEM micrographs further revealed growth of fiber like formations of ZnO on film surface with increasing annealing temperature. ImageJ software was further used to analyse the SEM micrographs and compositional characteristics from EDX results were co-related with structural, optical and morphological results.

  13. Carrier transfer and thermal escape in CdTe/ZnTe quantum dots.

    Science.gov (United States)

    Man, Minh Tan; Lee, Hong Seok

    2014-02-24

    We report on the carrier transfer and thermal escape in CdTe/ZnTe quantum dots (QDs) grown on a GaAs substrate. The significant emission-energy-dependent decay time at high excitation intensity (35 W/cm2) is attributed to the lateral transfer of carriers in the QDs. At low temperature (thermally activated transition occurs between two different states separated by approximately 9 meV, while the main contribution to nonradiative processes is the thermal escape from QDs that is assisted by carrier scattering via the emission of longitudinal phonons through the excited QD states at high temperature, with energies of approximately 19 meV.

  14. Study of gamma radiation shielding properties of ZnO−TeO$_2$ glasses

    Indian Academy of Sciences (India)

    SHAMS A M ISSA; M I SAYYED; MURAT KURUDIREK

    2017-08-01

    Mass attenuation coefficient ($\\mu_{\\rm m}$), half value layer (HVL) and mean free path (MFP) for xZnO−(100−$x$)TeO$_2$, where $x = 10$, 15, 20, 25, 30, 35 and 40 mol%, have been measured for 0.662, 1.173 and 1.33 MeV photons emittedfrom ${}^{137}$Cs and ${}^{60}$Co using a $3\\times 3 inch NaI(Tl) detector. Some relevant parameters such as effective atomic numbers ($Z_{\\rm eff}$) and electron densities ($N_{el}$) of glass samples have been also calculated in the photon energy range of 0.015–15 MeV. Moreover, gamma-ray energy absorption buildup factor (EABF) and exposure buildup factor (EBF) were estimated using a five-parameter Geometric Progression (GP) fitting approximation, for penetration depths up to 40 MFP and in the energy range 0.015–15 MeV. The measured mass attenuation coefficients were found to agree satisfactorily with the theoreticalvalues obtained through WinXcom. Effective atomic numbers ($Z_{\\rm eff}$) and electron densities ($N_{el}$) were found to be the highest for 40ZnO−60TeO$_2$ glass in the energy range 0.04–0.2 MeV. The 10ZnO−90TeO$_2$ glass sample has lower values of gamma-ray EBFs in the intermediate energy region. The reported new data on radiation shielding characteristics of zinctellurite glasses should be beneficial from the point of proper gamma shield designs when intended to be used as radiationshields.

  15. Fast Neutron Detection Using Pixelated CdZnTe Spectrometers

    Science.gov (United States)

    Streicher, Michael; Goodman, David; Zhu, Yuefeng; Brown, Steven; Kiff, Scott; He, Zhong

    2017-07-01

    Fast neutrons are an important signature of special nuclear materials (SNMs). They have a low natural background rate and readily penetrate high atomic number materials that easily shield gamma-ray signatures. Therefore, they provide a complementary signal to gamma rays for detecting shielded SNM. Scattering kinematics dictate that a large nucleus (such as Cd or Te) will recoil with small kinetic energy after an elastic collision with a fast neutron. Charge carrier recombination and quenching further reduce the recorded energy deposited. Thus, the energy threshold of CdZnTe detectors must be very low in order to sense the small signals from these recoils. In this paper, the threshold was reduced to less than 5 keVee to demonstrate that the 5.9-keV X-ray line from 55Fe could be separated from electronic noise. Elastic scattering neutron interactions were observed as small energy depositions (less than 20 keVee) using digitally sampled pulse waveforms from pixelated CdZnTe detectors. Characteristic gamma-ray lines from inelastic neutron scattering were also observed.

  16. Influence of Illumination on the Electrical Properties of p-(ZnMgTe/ZnTe:N)/CdTe/n-(CdTe:I)/GaAs Heterojunction Grown by Molecular Beam Epitaxy (MBE)

    Science.gov (United States)

    Jum'h, I.; Abd El-Sadek, M. S.; Al-Taani, H.; Yahia, I. S.; Karczewski, G.

    2016-11-01

    Heterostructure p-(ZnMgTe/ZnTe:N)/CdTe/n-(CdTe:I)/GaAs was evaporated using molecular beam epitaxy and investigated for photovoltaic energy conversion application. The electrical properties of the studied heterostructure were measured and characterized in order to understand the relevant electrical transport mechanisms. Electrical properties derived from the current-voltage (I-V) characteristics of solar cells provide essential information necessary for the analysis of performance losses and device efficiency. I-V characteristics are investigated in dark conditions and under different light intensities. All the electrical and power parameters of the heterostructure were measured, calculated and explained.

  17. Influence of Illumination on the Electrical Properties of p-(ZnMgTe/ZnTe:N)/CdTe/n-(CdTe:I)/GaAs Heterojunction Grown by Molecular Beam Epitaxy (MBE)

    Science.gov (United States)

    Jum'h, I.; Abd El-Sadek, M. S.; Al-Taani, H.; Yahia, I. S.; Karczewski, G.

    2017-02-01

    Heterostructure p-(ZnMgTe/ZnTe:N)/CdTe/n-(CdTe:I)/GaAs was evaporated using molecular beam epitaxy and investigated for photovoltaic energy conversion application. The electrical properties of the studied heterostructure were measured and characterized in order to understand the relevant electrical transport mechanisms. Electrical properties derived from the current-voltage ( I- V) characteristics of solar cells provide essential information necessary for the analysis of performance losses and device efficiency. I- V characteristics are investigated in dark conditions and under different light intensities. All the electrical and power parameters of the heterostructure were measured, calculated and explained.

  18. Thermal Emittance Measurement of the Cs2Te Photocathode in FZD Superconducting RF

    CERN Document Server

    Xiang, R; Michel, P; Murcek, P; Teichert, J

    2010-01-01

    The thermal emittance of the photocathode is an interesting physical property for the photoinjector, because it decides the minimum emittance the photoinjector can finally achieve. In this paper we will report the latest results of the thermal emittance of the Cs2Te photocathode in FZD Superconducting RF gun. The measurement is performed with solenoid scan method with very low bunch charge and relative large laser spot on cathode, in order to reduce the space charge effect as much as possible, and meanwhile to eliminate the wake fields and the effect from beam halos.

  19. Photoluminescence characteristics of ZnTe bulk crystal and ZnTe epilayer grown on GaAs substrate by MOVPE

    Science.gov (United States)

    Lü, Hai-Yan; Mu, Qi; Zhang, Lei; Lü, Yuan-Jie; Ji, Zi-Wu; Feng, Zhi-Hong; Xu, Xian-Gang; Guo, Qi-Xin

    2015-12-01

    Excitation power and temperature-dependent photoluminescence (PL) spectra of the ZnTe epilayer grown on (100) GaAs substrate and ZnTe bulk crystal are investigated. The measurement results show that both the structures are of good structural quality due to their sharp bound excitonic emissions and absence of the deep level structural defect-related emissions. Furthermore, in contrast to the ZnTe bulk crystal, although excitonic emissions for the ZnTe epilayer are somewhat weak, perhaps due to As atoms diffusing from the GaAs substrate into the ZnTe epilayer and/or because of the strain-induced degradation of the crystalline quality of the ZnTe epilayer, neither the donor-acceptor pair (DAP) nor conduction band-acceptor (e-A) emissions are observed in the ZnTe epilayer. This indicates that by further optimizing the growth process it is possible to obtain a high-crystalline quality ZnTe heteroepitaxial layer that is comparable to the ZnTe bulk crystal. Project supported by the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20120131110006), the Key Science and Technology Program of Shandong Province, China (Grant No. 2013GGX10221), the Key Laboratory of Functional Crystal Materials and Device (Shandong University, Ministry of Education), China (Grant No. JG1401), the National Natural Science Foundation of China (Grant No. 61306113), the Major Research Plan of the National Natural Science Foundation of China (Grant No. 91433112), and the Partnership Project for Fundamental Technology Researches of the Ministry of Education, Culture, Sports, Science and Technology, Japan.

  20. Extended defects in as-grown CdZnTe

    Energy Technology Data Exchange (ETDEWEB)

    Xu, L.; Bolotnikov, A.E.; Hossain, A.; Kim, K-H.; Gul, R.; Yang, G.; Camarda, G.S.; Marchini, L.; Cui, Y.; James, R.B.; Xu, Y.; Wang, T.; Jie, W.

    2010-08-01

    We characterized samples cut from different locations in as-grown CdZnTe (CZT) ingots, using Automated Infrared (IR) Transmission Microscopy and White Beam X-ray Diffraction Topography (WBXDT), to locate and identify the extended defects in them. Our goal was to define the distribution of these defects throughout the entire ingot and their effects on detectors’ performance as revealed by the pulse-height spectrum. We found the highest- and the lowest- concentration of Te inclusions, respectively, in the head and middle part of the ingot, which could serve as guidance in selecting samples. Crystals with high concentration of Te inclusions showed high leakage current and poor performance, because the accumulated charge loss around trapping centers associated with Te inclusions distorts the internal electric field, affects the carrier transport properties inside the crystal, and finally degrades the detector’s performance. In addition, other extended defects revealed by the WBXDT measurements severely reduced the detector’s performance, since they trap large numbers of electrons, leading to a low signal for the pulse-height spectrum, or none whatsoever. Finally, we fully correlated the detector’s performance with our information on the extended defects gained from both the IR- and the WBXDT-measurements.

  1. Characteristics of a prototype CdZnTe detector

    Institute of Scientific and Technical Information of China (English)

    XU Huichao; CHENG Cheng; ZHAO Cuilan; ZHANG Jinzhou; PU Shijie

    2007-01-01

    Cadmium zinc telluride(CZT)is a preferred material for X-ray and gamma-ray detector.Thanks to the relatively high atomic number,high density and wide band-gap.CZT detector possesses sharp energy resolution and high detection efficiency without cryogenic cooling.We have developed a CdZnTe detector with an energy resolution of 3.45%(FWHM)at 59.54 keV at room temperature.and it is used for X-ray fluorescence analysis.In this paper,leakage current,energy resolution and long term stability of the CZT detector are discussed.

  2. Photoconductivity of ZnTe thin films at elevated temperatures

    Indian Academy of Sciences (India)

    N Mazumdar; R Sarma; B K Sarma; H L Das

    2006-02-01

    Photoconductivity of thermally evaporated ZnTe thin films was studied at different elevated temperatures. A gap type cell configuration with Al electrodes on glass substrates was used. The conductivity was found to obey two distinct conduction mechanisms within the region of applied fields. At low fields the photoconduction is ohmic and at high fields it is of Poole–Frenkel type. With increase of ambient temperatures, the Poole–Frenkel conductivity regions were found to extend to lower fields. The temperature dependence of dark conductivity also was found to be of similar nature.

  3. Some spectral response characteristics of ZnTe thin films

    Indian Academy of Sciences (India)

    R Sarma; N Mazumdar; H L Das

    2006-02-01

    Zinc telluride thin films have been grown at room temperature and higher temperature substrates by thermal evaporation technique in a vacuum of 10-6 torr. A main peak in the photocurrent is observed at 781 nm (1.58 eV) with two lower amplitude peaks on the lower wavelength side and one on higher wavelength side. The evaluated thermal activation energy is found to correspond well with the main spectral peak. From these studies it can be inferred that temperatures up to 453 K is still in the extrinsic conductivity region of the studied ZnTe thin films.

  4. Analysis of Cu Diffusion in ZnTe-Based Contacts for Thin-Film CdS/CdTe Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Narayanswamy, C. (Department of Physics & Astronomy, University of Toledo); Gessert, T. A. and Asher, S. E. (National Renewable Energy Laboratory)

    1998-10-27

    Ohmic contacts to thin-film CdS/CdTe photovoltaic devices have been formed using a two-layer contact interface of undoped ZnTe (ZnTe) and Cu-doped ZnTe (ZnTe:Cu), followed by Ni or Ti as an outer metallization. Secondary ion mass spectroscopy (SIMS) is used to study Cu diffusion within this back-contact structure, and also, to monitor Cu diffusion from the contact into the CdTe. When Ni metallization is used, the ZnTe:Cu layer becomes increasingly depleted of Cu, and Ni diffusion into the ZnTe:Cu increases as the contact deposition temperature increases from 100 C to 300 C. Cu depletion is not observed when Ni is replaced with Ti. Diffusion of Cu from the ZnTe:Cu layer into the ZnTe layer also increases with contact deposition temperature, and produces a buildup of Cu at the ZnTe/CdTe interface. High-mass resolution SIMS indicates that, although Cu levels in the CdTe remain low, Cu diffusion from the contact proceeds into the CdTe layer and toward the CdTe/CdS junction region.

  5. The Effects of Sputtering Target Preparation and Deposition Temperature on ZnTe:Cu Film Properties

    Energy Technology Data Exchange (ETDEWEB)

    Faulkner, Brooke R.; Ohno, T. R.; Burst, James M.; Duenow, Joel N.; Perkins, Craig L.; To, Bobby; Gessert, Timothy A.

    2015-06-14

    A back contact containing a sputtered ZnTe:Cu interface layer can produce high-performing thin-film CdS/CdTe photovoltaic devices. We have found that varying the ZnTe:Cu sputtering target fabrication processes and deposition temperature can affect material properties of the ZnTe:Cu films and the resulting device performance. Two different target 'recipes' with various copper contents were used to study changes in the compositional, structural, optical, and electrical properties of ZnTe:Cu films. Substrate temperature during deposition was also varied to investigate the temperature dependence of the films. It was found that the target recipe, Cu concentration in the target, and deposition temperature affect the composition of the ZnTe:Cu films, which impacts their structural, optical, and electrical properties.

  6. Heterostructures with CdTe/ZnTe quantum dots for single photon emitters grown by molecular beam epitaxy

    Science.gov (United States)

    Sorokin, S. V.; Sedova, I. V.; Gronin, S. V.; Belyaev, K. G.; Rakhlin, M. V.; Toropov, A. A.; Mukhin, I. S.; Ivanov, S. V.

    2016-12-01

    We report on the molecular beam epitaxy (MBE) of heterostructures with CdTe/ZnTe quantum dots (QDs) with relatively low surface density, which could be used as single-photon emitters. The QDs were formed on the surface of a 3.1- to 4.5-monolayer-thick two-dimensional strained CdTe layer by depositing amorphous Te layer and its fast thermal desorption. Subsequent thermal annealing of the surface with QDs in the absence of external Te flux led to strong broadening and short-wavelength shift of the QD photoluminescence (PL) peak. Measurement of the micro-PL spectra of individual CdTe/ZnTe quantum dots in fabricated mesastructures with a diameter of 200—1000 nm allowed estimation of the QD surface density as 1010 cm-2.

  7. Auger and x-ray photoemission spectroscopy study on Cs2Te photocathodes

    Science.gov (United States)

    di Bona, A.; Sabary, F.; Valeri, S.; Michelato, P.; Sertore, D.; Suberlucq, G.

    1996-09-01

    Thin films of Cs2Te have been produced and analyzed by Auger depth profiling and x-ray photoemission spectroscopy (XPS). The formation of the photoemissive material passes through different phases, each of them has been characterized by XPS and by its total yield in the spectral region 3.5-5 eV. Copper and molybdenum substrates have been considered. While Mo behaves to all practical purposes like an ideal support for Cs2Te, strong diffusion from the substrate material into the photoemissive film has been observed on photocathodes fabricated on Cu. The ruggedness of the photocathodes has been tested by exposing them to a few hundred Langmuirs of different gases, namely O2, CO2, CO, N2, and CH4. The last three have no effect on the photocathode lifetime, while a substantial reduction of the quantum efficiency has been observed after the exposure to oxygen. The main reason for this is the formation of a thick cesium oxide layer at the surface of the photocathode. However, the oxygen pollution can be partially recovered by the combined effect of heating the photocathode at 230 °C and illuminating the poisoned material with the 4.9 eV radiation. No rejuvenation has been observed under the effect of the temperature or the radiation alone.

  8. Viscosity Relaxation in Molten HgZnTe

    Science.gov (United States)

    Baird, James K.

    2002-01-01

    Because of its narrow electronic band-gap, HgZnTe solid solutions have been proposed as effective detectors for infrared radiation. To produce the best single crystals of these materials for this application, knowledge of the phase diagram that governs the freezing of the liquid is essential. Besides the phase diagram, however, some information concerning the thermophysical properties of the melt, such as viscosity, density, specific heat, and enthalpy of mixing, can also be useful. Of these thermophysical properties, the viscosity is perhaps of the most interest scientifically. Measurements using the oscillating cup method have shown that the isothermal melt requires tens of hours of equilibration time before a steady value of the viscosity can be achieved. Over this equilibration time, which depends upon temperature, the viscosity can increase by as much as a factor of two before reaching a steady state. We suggest that this relaxation phenomenon may be due to a slight polymerization of Te atoms in the melt. To account for the time dependence of the viscosity in the HgZnTe melt, we propose that the liquid acts as a solvent that favors the formation of Te atom chains. We suggest that as the melt is cooled from a high temperature to the temperature for measurement of the viscosity, a free radical polymerization of Te atoms begins. To estimate this average molecular weight, we use a simple free radical polymerization mechanism, including a depolymerization step, to calculate the time dependence to the concentration of each Te polymer molecular weight fraction. From these molecular weight fractions, we compute the weight average molecular weight of the distribution. Using the semi-empirical relation between average molecular weight and viscosity, we obtain a formula for the time dependence of the viscosity of the melt. Upon examining this formula, we find that the viscosity achieves a steady value when a balance is achieved between the rate of formation of the chains

  9. Optical properties of ZnTe and ZnS nanocrystals by critical-points and Tauc-Lorentz models

    Energy Technology Data Exchange (ETDEWEB)

    En Naciri, A., E-mail: ennacir@univ-metz.f [Universite Paul Verlaine-Metz, Laboratoire LPMD, 1 Bd Arago, 57078 Metz (France); Ahmed, F. [Universite Paul Verlaine-Metz, Laboratoire LPMD, 1 Bd Arago, 57078 Metz (France); Stchakovsky, M. [Horiba-Jobin Yvon, Z. A. de la Vigne-aux-loups, 5 Avenue Arago, 91380 Chilly-Mazarin Cedex (France)

    2011-02-28

    The optical properties of ZnTe and ZnS nanocrystals (ZnTe-NC and ZnS-NC) were determined by Spectroscopic Ellipsometry. The nanocrystals were embedded in a SiO{sub 2} matrix by ion implantation technique. Their sizes were characterized by transmission electron microscopy. The ZnTe-NC and ZnS-NC were modelled using Critical Points (CPs) dispersion formulas developed by Adachi. Besides the CPs model, the Tauc-Lorentz model was found to be another choice to get a good spectral fitting. Here we demonstrated that these models yield reasonable values of optical constants of II-VI nanocrystals. The best agreement was found with the experimental data over the entire range of 0.6 to 6.5 eV.

  10. ADVANCED READOUT ELECTRONICS FOR MULTIELEMENT CdZnTe SENSORS.

    Energy Technology Data Exchange (ETDEWEB)

    DE GERONIMO,G.; O CONNOR,P.; KANDASAMY,A.; GROSHOLZ,J.

    2002-07-08

    A generation of high performance front-end and read-out ASICs customized for highly segmented CdZnTe sensors is presented. The ASICs, developed in a multi-year effort at Brookhaven National Laboratory, are targeted to a wide range of applications including medical, safeguards/security, industrial, research, and spectroscopy. The front-end multichannel ASICs provide high accuracy low noise preamplification and filtering of signals, with versions for small and large area CdZnTe elements. They implement a high order unipolar or bipolar shaper, an innovative low noise continuous reset system with self-adapting capability to the wide range of detector leakage currents, a new system for stabilizing the output baseline and high output driving capability. The general-purpose versions include programmable gain and peaking time. The read-out multichannel ASICs provide fully data driven high accuracy amplitude and time measurements, multiplexing and time domain derandomization of the shaped pulses. They implement a fast arbitration scheme and an array of innovative two-phase offset-free rail-to-rail analog peak detectors for buffering and absorption of input rate fluctuations, thus greatly relaxing the rate requirement on the external ADC. Pulse amplitude, hit timing, pulse risetime, and channel address per processed pulse are available at the output in correspondence of an external readout request. Prototype chips have been fabricated in 0.5 and 0.35 {micro}m CMOS and tested. Design concepts and experimental results are discussed.

  11. Performance updating of CdZnTe strip-drift detectors

    DEFF Research Database (Denmark)

    Shorohov, M.; Tsirkunova, I.; Loupilov, A.;

    2007-01-01

    59.6 and 662 keV correspondingly. Recently, significant progress was done in CdZnTe crystals growth technology. In the present paper we present preliminary result of performance updating of CdZnTe strip-drift detectors based on crystal of 10 x 10 x 6 mm 3 produced by Yinnel Tech company. Results...

  12. Interface chemistry of CdZnTe films studied by a peel-off approach

    Science.gov (United States)

    Tao, Jun; Xu, Haitao; Zhang, Yuelu; Ji, Huanhuan; Xu, Run; Huang, Jian; Zhang, Jijun; Liang, Xiaoyan; Tang, Ke; Wang, Linjun

    2016-12-01

    CdZnTe films with thickness above 50 μm were deposited at temperatures of 200-500 °C by Close Space Sublimation method. A peel-off approach has been adopted to study the interface chemistry of CdZnTe thick films. For all the CdZnTe films, the scanning electron microscopy images show the small and round-like grains formed at interface in contrast to the large ordered grains at surface. For CdZnTe films grown at a low substrate temperature of 200 °C, the interface layer between CdZnTe and substrate is mixed with Te and CdTe, as evidenced by X-ray diffraction, Raman and X-ray photoelectron spectroscopy results. The thickness of the interface layer can be estimated to be 84 nm by depth profile using X-ray photoelectron spectroscopy. In contrast, a thin interface layer less than 14 nm is found at a high substrate temperature of 500 °C. The limited reaction of Te2 and Cd (Zn) to CdZnTe at a low growth temperature is responsible for the formation of the thick interface layer and a slow deposition rate at the nucleation stage.

  13. Fluorescence enhancement of glutathione capped CdTe/ZnS quantum dots by embedding into cationic starch for sensitive detection of rifampicin

    Science.gov (United States)

    Hooshyar, Zari; Bardajee, Ghasem Rezanejade

    2017-02-01

    In this study, we describe the synthesis of a new quantum dots (QDs) by embedding glutathione capped CdTe/ZnS QDs into cationic starch biopolymer (CS-GSH-CdTe/ZnS QDs). The fluorescence intensity of prepared QDs was significantly enhanced. When QDs interacted with rifampicin, the fluorescence intensity of the CS-GSH-CdTe/ZnS QDs was highly quenched compared with GSH-CdTe/ZnS QDs. Based on the above, a new fluorescent nanosensor for simple, sensitive and selective detection of rifampicin was developed. The fluorescence quenching was well described by the typical Stern-Volmer equation. After optimization, the linear range of the as-prepared QDs fluorescence intensity versus the concentration of rifampicin was F0/F = 0.0422Q + 1.109 (R2 = 0.99). The detection limit was 0.06 × 10- 6 mol/L. The proposed method with satisfactory results was used to detect rifampicin in commercial capsules and tablets.

  14. A novel intermediate layer for Au/CdZnTe/FTO photoconductive structure

    Science.gov (United States)

    Zhang, Yuelu; Wang, Linjun; Xu, Run; Huang, Jian; Tao, Jun; Meng, Hua; Zhang, Jijun; Min, Jiahua

    2016-12-01

    In this work, graphene is tried to use to improve the performance of polycrystalline CdZnTe high-energy radiation and photon detectors. A graphene intermediate layer is prepared by spin-coating process on the surface of polycrystalline CdZnTe film, which forms a photoconductive Au/graphene/CdZnTe/FTO structure. XRD, Raman, photoelectric response and other characterisation methods are adopted to investigate the effect of graphene layer on the electrical characteristics and UV photo-response performance of CdZnTe photoconductive structure. It is demonstrated that graphene layer can significantly improve the contact property of Au/CdZnTe structure, and obviously enhance its UV photo-response and the UV sensitivity increased with one order of magnitude.

  15. Photoluminescence of vapor and solution grown ZnTe single crystals

    Science.gov (United States)

    Biao, Y.; Azoulay, M.; George, M. A.; Burger, A.; Collins, W. E.; Silberman, E.; Su, C.-H.; Volz, M. E.; Szofran, F. R.; Gillies, D. C.

    1994-04-01

    ZnTe single crystals grown by horizontal physical vapor transport (PVT) and by vertical traveling heater method (THM) from a Te solution were characterized by photoluminescence (PL) at 10.6 K and by atomic force microscopy (AFM). Copper was identified by PL as a major impurity existing in both crystals, forming a substitutional acceptor, Cu Zn. The THM ZnTe crystals were found to contain more Cu impurity than the PVT ZnTe crystals. The formation of Cu Zn-V Te complexes and the effects of annealing, oxygen contamination and intentional Cu doping were also studied. Finally, the surface morphology analyzed by AFM was correlated to the PL results.

  16. Research on Cu2ZnSnTe4 crystals and heterojunctions based on such crystals

    Directory of Open Access Journals (Sweden)

    Kovaliuk T. T.

    2015-12-01

    Full Text Available The paper reports on the results of the studies of magnetic, kinetic and optical properties of Cu2ZnSnTe4 crystals. The Cu2ZnSnTe4 crystals showed diamagnetic properties (the magnetic susceptibility almost independent of the magnetic field and temperature. The Cu2ZnSnTe4 crystals possessed p-type of conductivity and the Hall coefficient was independent on temperature. The temperature dependence of the electrical conductivity of the Cu2ZnSnTe4 crystal shows metallic character, i. e. decreases with the increase of temperature, that is caused by the lower charge carrier mobility at higher temperature. Thermoelectric power of the samples ispositive that also indicates on the prevalence of p-type conductivity. Heterojunctions n-TiN/p-Cu2ZnSnTe4, n-TiO2/p-Cu2ZnSnTe4 and n-MoO/p-Cu2ZnSnTe4 were fabricated by the reactive magnetron sputtering of TiN, TiO2 and MoOx thin films, respectively, onto the substrates made of the Cu2ZnSnTe4 crystals. The dominating current transport mechanisms in the n-TiN/p-Cu2ZnSnTe4 and n-TiO2/p-Cu2ZnSnTe4 heterojunctions were established to be the tunnel-recombination mechanism at forward bias and tunneling at reverse bias.

  17. Size and temperature effects on electric properties of CdTe/ZnTe quantum rings

    Institute of Scientific and Technical Information of China (English)

    Woo-Pyo Hong; Seoung-Hwan Park

    2011-01-01

    The electronic properties of CdTe/ZnTe quantum rings (QRs) are investigated as functions of size and temperature using an eight-band strain-dependent k-p Hamiltonian. The size effects of diameter and height on the strain distributions around the QRs are studied. We find that the interband transition energy,defined as the energy difference between the ground electronic and the ground heavy-hole subbands,increases with the increasing QR inner diameter regardless of the temperature,while the interband energy decreases with the increasing QR height. This is attributed to the reduction of subband energies in both the conduction and the valence bands due to the strain effects. Our model,in the framework of the finite element method and the theory of elasticity of solids,shows a good agreement with the temperature-dependent photoluminescence measurement of the interband transition energies.

  18. Lifetime Studies of Cs2Te Cathodes at the Phin RF Photoinjector at CERN

    CERN Document Server

    Hessler, C; Divall Csatari, M; Doebert, S; Fedosseev, V

    2012-01-01

    The PHIN photoinjector has been developed to study the feasibility of a photoinjector option for the CLIC (Compact LInear Collider) drive beam as an alternative to the baseline design, using a thermionic gun. The CLIC drive beam requires a high charge of 8.4 nC per bunch in 0.14 ms long trains, with 2 ns bunch spacing and 50 Hz macro pulse repetition rate, which corresponds to a total charge per macro pulse of 0.59 mC. This means unusually high peak and average currents for photoinjectors and is challenging concerning the cathode lifetime. In this paper detailed studies of the lifetime of Cs2Te cathodes, produced by the co-evaporation technique, are presented with respect to bunch charge, train length and vacuum level. Furthermore, the impact of the train length and bunch charge on the vacuum level will be discussed and steps to extend the lifetime will be outlined.

  19. Cross-Sectional Study of Macrodefects in MBE Dual-Band HgCdTe on CdZnTe

    Science.gov (United States)

    Reddy, M.; Lofgreen, D. D.; Jones, K. A.; Peterson, J. M.; Radford, W. A.; Benson, J. D.; Johnson, S. M.

    2013-11-01

    HgCdTe dual-band mid-wave infrared/long-wave infrared focal-plane arrays on CdZnTe are a key component in advanced electrooptic sensor applications. Molecular beam epitaxy (MBE) has been used successfully for growth of dual-band layers on larger CdZnTe substrates. However, the macrodefect density, which is known to reduce the pixel operability and its run-to-run variation, is larger when compared with layers grown on Si substrate. This paper reports the macrodefect density versus size signature of a well-optimized MBE dual-band growth and a cross-sectional study of a macrodefect that represents the most prevalent class using focused ion beam, scanning transmission electron microscopy, and energy-dispersive x-ray spectroscopy. The results show that the macrodefect originates from a void, which in turn is associated with a pit on the CdZnTe substrate.

  20. Chemical shift and spin-lattice relaxation time for two crystallographically inequivalent 133Cs sites in Cs2BBr4 (B=57Co, 63Cu, and 65Zn) using magic-angle spinning nuclear magnetic resonance

    Science.gov (United States)

    Lim, Ae Ran; Kim, Sun Ha

    2017-05-01

    The structural geometry around the 133Cs nuclei in Cs2BBr4 (B = 57Co, 63Cu, and 65Zn) was investigated by examining the chemical shifts and spin-lattice relaxation times in a rotating frame. Two crystallographically inequivalent Cs(1) and Cs(2) sites were differentiated. The spin-lattice relaxation times T1ρ of 133Cs nuclei in three crystals were measured to obtain detailed information about their structural dynamics. Cs(1) surrounded by eleven bromide ions was found to have a longer relaxation time than Cs(2) surrounded by nine bromide ions. The nuclear magnetic resonance (NMR) results were compared to previously reported results for Cs2BCl4. The halogen species in Cs2BX4 (X = Br, Cl) was not found to influence the relaxation time, whereas the B metal ion (B = Co, Cu, and Zn) was found to alter the relaxation time mechanism.

  1. Chitosan/zinc oxide-polyvinylpyrrolidone (CS/ZnO-PVP) nanocomposite for better thermal and antibacterial activity.

    Science.gov (United States)

    Karpuraranjith, M; Thambidurai, S

    2017-03-06

    A new biopolymer based ZnO-PVP nanocomposite was successfully synthesized by single step in situ precipitation method using chitosan as biosurfactant, zinc chloride as a source material, PVP as stabilizing agent and sodium hydroxide as precipitating agent. The chemical bonding and crystalline behaviors of chitosan, zinc oxide and PVP were confirmed by FT-IR and XRD analysis. The biopolymer connected ZnO particles intercalated PVP matrix was layer and rod like structure appeared in nanometer range confirmed by HR-SEM and TEM analysis. The surface topography image of CS/ZnO-PVP nanocomposite was obtained in the average thickness of 12nm was confirmed by AFM analysis. Thermal stability of cationic biopolymer based ZnO intercalated PVP has higher stability than CS-PVP and chitosan. Consequently, antimicrobial activity of chitosan/ZnO-PVP matrix acts as a better microbial inhibition activity than PVP-ZnO nanocomposite. The obtained above results demonstrate that CS and ZnO intercalated PVP matrix has better reinforced effect than other components. Therefore, Chitosan/ZnO-PVP nanocomposite may be a promising material for the biomedical applications.

  2. Numerical modeling of CdS/CdTe and CdS/CdTe/ZnTe solar cells as a function of CdTe thickness

    Energy Technology Data Exchange (ETDEWEB)

    Amin, Nowshad [Department of Electrical, Electronic and System Engineering, Faculty of Engineering, National University of Malaysia (UKM), Bangi 43600, Selangor D.E (Malaysia); Sopian, Kamaruzzaman [Solar Energy Research Institute, National University of Malaysia (UKM), Bangi 43600, Selangor D.E (Malaysia); Konagai, Makoto [Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552 (Japan)

    2007-08-15

    CdTe-based solar cells have long been of interest for terrestrial usage because of their high potential conversion efficiency (in the range of 18-24%) with low-cost manufacturability and concern over environmental effects. In order to conserve material and address environmental pollution concerns as well as to reduce carrier recombination loss throughout the absorber layer, efforts have been carried out to decrease the thickness of the CdTe absorption layer to 1 {mu}m. As a result, to date, the experimental part of this study has realized cell efficiencies of 15.3% and 11.5% with 7 and 1.2-{mu}m-thick CdTe layers, grown by close-spaced sublimation (CSS) [N. Amin, T. Isaka, T. Okamoto, A. Yamada, M. Konagai, Jpn. J. Appl. Phys. 38 (8) (1999) 4666; N. Amin, T. Isaka, A. Yamada, M. Konagai, Sol. Energy Matter. Sol. Cells 67 (2001) 195]. Since some problems remain with such thin 1 {mu}m CdTe layers, possible methods to realize higher efficiency have been investigated using novel solar cell structures, with the help of numerical analyses tools. In the theory part of this study, numerical analysis with a 1-D simulation program named NSSP (Numerical Solar Cell Simulation Program) has been used to simulate these structures. We investigated the viability of CdTe thickness reduction to 1 {mu}m together with the insertion of higher band-gap materials (i.e., ZnTe) at the back contacts to reduce carrier recombination loss there. The study shows potential results of the thickness reduction of CdTe absorption layer for a conventional CdS/CdTe/Cu-doped C structure with around 16% efficiency for cells below 3 {mu}m CdTe. Decreases were found in spectral response that suggest from minority carrier recombination loss at the back contact interface. A higher band-gap material like ZnTe has been inserted to produce a back surface field (BSF) to inhibit the minority carrier loss at the back contact. An increase in the efficiency to about 20% has been found for a 1 {mu}m-thin CdTe cell

  3. Electronic structure and transport in the low-temperature thermoelectric CsBi4Te6: Semiclassical transport equations

    DEFF Research Database (Denmark)

    Lykke, Lars; Iversen, Bo Brummerstedt; Madsen, Georg

    2006-01-01

    The band structure of the low-temperature thermoelectric material, CsBi4Te6, is calculated and analyzed using the semiclassic transport equations. It is shown that to obtain a quantitative agreement with measured transport properties, a band gap of 0.08 eV must be enforced. A gap in reasonable...

  4. Defect Tolerance to Intolerance in the Vacancy-Ordered Double Perovskite Semiconductors Cs2SnI6 and Cs2TeI6.

    Science.gov (United States)

    Maughan, Annalise E; Ganose, Alex M; Bordelon, Mitchell M; Miller, Elisa M; Scanlon, David O; Neilson, James R

    2016-07-13

    Vacancy-ordered double perovskites of the general formula A2BX6 are a family of perovskite derivatives composed of a face-centered lattice of nearly isolated [BX6] units with A-site cations occupying the cuboctahedral voids. Despite the presence of isolated octahedral units, the close-packed iodide lattice provides significant electronic dispersion, such that Cs2SnI6 has recently been explored for applications in photovoltaic devices. To elucidate the structure-property relationships of these materials, we have synthesized solid-solution Cs2Sn1-xTexI6. However, even though tellurium substitution increases electronic dispersion via closer I-I contact distances, the substitution experimentally yields insulating behavior from a significant decrease in carrier concentration and mobility. Density functional calculations of native defects in Cs2SnI6 reveal that iodine vacancies exhibit a low enthalpy of formation, and that the defect energy level is a shallow donor to the conduction band rendering the material tolerant to these defect states. The increased covalency of Te-I bonding renders the formation of iodine vacancy states unfavorable and is responsible for the reduction in conductivity upon Te substitution. Additionally, Cs2TeI6 is intolerant to the formation of these defects, because the defect level occurs deep within the band gap and thus localizes potential mobile charge carriers. In these vacancy-ordered double perovskites, the close-packed lattice of iodine provides significant electronic dispersion, while the interaction of the B- and X-site ions dictates the properties as they pertain to electronic structure and defect tolerance. This simplified perspective based on extensive experimental and theoretical analysis provides a platform from which to understand structure-property relationships in functional perovskite halides.

  5. Defect Tolerance to Intolerance in the Vacancy-Ordered Double Perovskite Semiconductors Cs2SnI6 and Cs2TeI6

    Energy Technology Data Exchange (ETDEWEB)

    Maughan, Annalise E.; Ganose, Alex M.; Bordelon, Mitchell M.; Miller, Elisa M.; Scanlon, David O.; Neilson, James R.

    2016-07-13

    Vacancy-ordered double perovskites of the general formula, A2BX6, are a family of perovskite derivatives composed of a face-centered lattice of nearly isolated [BX6] units with A-site cations occupying the cuboctahedral voids. Despite the presence of isolated octahedral units, the close-packed iodide lattice provides significant electronic dispersion, such that Cs2SnI6 has recently been explored for applications in photovoltaic devices. To elucidate the structure-property relationships of these materials, we have synthesized the solid solution Cs2Sn1-xTexI6. However, even though tellurium substitution increases electronic dispersion via closer I-I contact distances, the substitution experimentally yields insulating behavior from a significant decrease in carrier concentration and mobility. Density functional calculations of native defects in Cs2SnI6 reveal that iodine vacancies exhibit a low enthalpy of formation and the defect energy level is a shallow donor to the conduction band, rendering the material tolerant to these defect states. The increased covalency of Te-I bonding renders the formation of iodine vacancy states unfavorable, and is responsible for the reduction in conductivity upon Te substitution. Additionally, Cs2TeI6 is intolerant to the formation of these defects, as the defect level occurs deep within the band gap and thus localizes potential mobile charge carriers. In these vacancy-ordered double perovskites, the close-packed lattice of iodine provides significant electronic dispersion, while the interaction of the B- and X-site ions dictates the properties as they pertain to electronic structure and defect tolerance. This simplified perspective -- based on extensive experimental and theoretical analysis -- provides a platform from which to understand structure-property relationships in functional perovskite halides.

  6. Bulk and surface properties of ZnTe-ZnS system semiconductors

    Science.gov (United States)

    Kirovskaya, I. A.; Mironova, E. V.; Kosarev, B. A.; Nor, P. E.; Bukashkina, T. L.

    2016-10-01

    Physicochemical studies of a new ZnTe-ZnS semiconductor system are conducted. It is found that at certain ratios of binary components, substitutional solid solutions with a cubic sphalerite structure are formed in this system. Interrelated laws governing changes in the bulk (crystal chemical, structural) and surface (acid-base) properties with varying system composition are identified. It is assumed they can be attributed to the nature of the active (acid-base) sites. The presented data, observed patterns, and an interpretation of them are used not only to confirm earlier proposed mechanisms of atomic-molecular interaction on diamond-like semiconductors, but to search for promising materials for use in highly sensitive selective sensors for environmental and medical purposes as well.

  7. Measurement of the CdSe/ZnTe valence band offset by x-ray photoelectron spectroscopy

    OpenAIRE

    E. T. Yu; Phillips, M. C.; McCaldin, J. O.; McGill, T. C.

    1991-01-01

    We have used x-ray photoelectron spectroscopy (XPS) to measure the valence band offset in situ for CdSe/ZnTe (100) heterojunctions grown by molecular-beam epitaxy. XPS measurements were performed for films of CdSe (100) and ZnTe (100), and for heterojunctions consisting of either ~25 Å of CdSe grown on ZnTe or ~25 Å of ZnTe grown on CdSe. Observations of reflection high energy electron diffraction patterns indicated that CdSe films deposited on ZnTe were grown in cubic zinc blende form, rathe...

  8. 衬底温度对CdTe/ZnTe多层薄膜制备的影响%The influence of substrate temperature on the preparation of CdTe/ZnTe Multi-layer thin films

    Institute of Scientific and Technical Information of China (English)

    程四兴; 王文武; 黎兵; 唐萍; 冯良桓; 蔡亚平; 张静全; 李卫; 武莉莉; 曾广根

    2012-01-01

    CdTe/ZnTe multi-layer thin films are prepared by magnetron sputtering. On the base of preparing single CdTe films and ZnTe films, the influence of substrate temperature on the properties of CdTe/ZnTe multi-layer thin films is studied. The structure is studied through the analysis of XRD and absorption spectrum. CdTe and ZnTe thin films have an essentially (111) perferred growth orientation when the CdTe/ZnTe multi-layer films are prepared at 185℃. Especially, ZnTe layers have significantly (111) perferred growth orientation and great diffraction intensity. The simples prepared at 185℃ have the greater diffraction intensity and better film quality when compared with those prepared at room-temperature and 300℃. As can be seen through the absorption spectrum, the films deposited at 185℃ have better absorption.%采用射频磁控溅射法制备了CdTe/ZnTe多层薄膜,并在制备单层CdTe薄膜和ZnTe薄膜的基础上,研究了衬底温度对CdTe/ZnTe多层薄膜性质的影响;通过XRD和透过谱、吸收谱的分析,对其结构进行了研究.结果表明在185℃下制备的CdTe/ZnTe多层膜中,CdTe和ZnTe均沿(111)晶面择优取向生长,尤其是ZnTe沿(111)晶面择优取向明显,衍射强度极大.通过比较不同衬底温度,发现185℃生长的样品衍射峰强度最高,成膜质量较好;通过吸收谱图分析,185℃下沉积的样品对光有较好的吸收性.

  9. Aqueous synthesis of ZnTe/dendrimer nanocomposites and their antimicrobial activity: implications in therapeutics

    Science.gov (United States)

    Ghosh, S.; Ghosh, D.; Bag, P. K.; Bhattacharya, S. C.; Saha, A.

    2011-03-01

    The present strategy proposes a simple and single step aqueous route for synthesizing stable, fluorescent ZnTe/dendrimer nanocomposites with varying dendrimer terminal groups. In these hybrid materials, the fluorescence of the semiconductor combines with the biomimetic properties of the dendrimer making them suitable for various biomedical applications. The ZnTe nanocomposites thus obtained demonstrate bactericidal activity against enteropathogenic bacteria without having toxic effects on the human erythrocytes. The average size of the ZnTe nanoparticles within the dendrimer matrix was in the range of 2.9-6.0 nm, and they have a good degree of crystallinity with a hexagonal crystal phase. The antibacterial activities of the ZnTe/dendrimer nanocomposites (ZnTe DNCs) as well other semiconductor nanocomposites were evaluated against enteropathogenic bacteria including multi-drug resistant Vibrio cholerae serogroup O1 and enterotoxigenic Escherichia coli (ETEC). ZnTe DNCs had significant antibacterial activity against strains of V. cholerae and ETEC with minimum inhibitory concentrations ranging from 64 to 512 μg ml-1 and minimum bactericidal concentrations ranging from 128 to 1000 μg ml-1. Thus, the observed results suggest that these water-soluble active nanocomposites have potential for the treatment of enteric diseases like diarrhoea and cholera.The present strategy proposes a simple and single step aqueous route for synthesizing stable, fluorescent ZnTe/dendrimer nanocomposites with varying dendrimer terminal groups. In these hybrid materials, the fluorescence of the semiconductor combines with the biomimetic properties of the dendrimer making them suitable for various biomedical applications. The ZnTe nanocomposites thus obtained demonstrate bactericidal activity against enteropathogenic bacteria without having toxic effects on the human erythrocytes. The average size of the ZnTe nanoparticles within the dendrimer matrix was in the range of 2.9-6.0 nm, and they

  10. Preparation and characterization of ZnTe thin films by SILAR method

    Energy Technology Data Exchange (ETDEWEB)

    Kale, S.S. [Inorganic Nano-Materials Laboratory, Department of Chemistry, Hanyang University, Sungdong-Ku, Seoul 133-791 (Korea, Republic of); Mane, R.S. [Inorganic Nano-Materials Laboratory, Department of Chemistry, Hanyang University, Sungdong-Ku, Seoul 133-791 (Korea, Republic of); Pathan, H.M. [Eco-Nano Research Centre, Korea Institute of Science and Technology, P.O. Box 131, Chongryang, Seoul 130-650 (Korea, Republic of); Shaikh, A.V. [AKI' s Poona College of Arts, Science and Commerce, Pune (India); Joo, Oh-Shim [Eco-Nano Research Centre, Korea Institute of Science and Technology, P.O. Box 131, Chongryang, Seoul 130-650 (Korea, Republic of); Han, Sung-Hwan [Inorganic Nano-Materials Laboratory, Department of Chemistry, Hanyang University, Sungdong-Ku, Seoul 133-791 (Korea, Republic of)]. E-mail: shhan@hanyang.ac.kr

    2007-02-28

    Nanocrystalline zinc telluride (ZnTe) thin films were prepared by using successive ionic layer adsorption and reaction (SILAR) method from aqueous solutions of zinc sulfate and sodium telluride. The films were characterized by X-ray diffraction, scanning electron microscopy, energy dispersive X-ray analysis and optical absorption measurement techniques. The synthesized ZnTe thin films were nanocrystalline with densely aggregated particles in nanometer scale and were free from the voids or cracks. The optical band gap energy of the film was found to be thickness dependent. The elemental chemical compositional stoichiometric analysis revealed good Zn:Te elemental ratio of 53:47.

  11. Preparation and characterization of ZnTe thin films by SILAR method

    Science.gov (United States)

    Kale, S. S.; Mane, R. S.; Pathan, H. M.; Shaikh, A. V.; Joo, Oh-Shim; Han, Sung-Hwan

    2007-02-01

    Nanocrystalline zinc telluride (ZnTe) thin films were prepared by using successive ionic layer adsorption and reaction (SILAR) method from aqueous solutions of zinc sulfate and sodium telluride. The films were characterized by X-ray diffraction, scanning electron microscopy, energy dispersive X-ray analysis and optical absorption measurement techniques. The synthesized ZnTe thin films were nanocrystalline with densely aggregated particles in nanometer scale and were free from the voids or cracks. The optical band gap energy of the film was found to be thickness dependent. The elemental chemical compositional stoichiometric analysis revealed good Zn:Te elemental ratio of 53:47.

  12. Identification of Ag-acceptors in $^{111}Ag^{111}Cd$ doped ZnTe and CdTe

    CERN Document Server

    Hamann, J; Deicher, M; Filz, T; Lany, S; Ostheimer, V; Strasser, F; Wolf, H; Wichert, T

    2000-01-01

    Nominally undoped ZnTe and CdTe crystals were implanted with radioactive /sup 111/Ag, which decays to /sup 111/Cd, and investigated by photoluminescence spectroscopy (PL). In ZnTe, the PL lines caused by an acceptor level at 121 meV are observed: the principal bound exciton (PBE) line, the donor-acceptor pair (DAP) band, and the two-hole transition lines. In CdTe, the PBE line and the DAP band that correspond to an acceptor level at 108 meV appear. Since the intensities of all these PL lines decrease in good agreement with the half-life of /sup 111/Ag of 178.8 h, both acceptor levels are concluded to be associated with defects containing a single Ag atom. Therefore, the earlier assignments to substitutional Ag on Zn- and Cd-lattice sites in the respective II-VI semiconductors are confirmed. The assignments in the literature of the S/sub 1/, S /sub 2/, and S/sub 3/ lines in ZnTe and the X/sub 1//sup Ag/, X/sub 2 //sup Ag//C/sub 1//sup Ag/, and C/sub 2//sup Ag/ lines in CdTe to Ag- related defect complexes are ...

  13. Low-cost CdZnTe devices for cascade cell application

    Energy Technology Data Exchange (ETDEWEB)

    Basol, B.M.; Kapur, V.K. (International Solar Electric Technology, Inglewood, CA (USA))

    1990-11-01

    This report describes a research program to develop a low-cost technique for producing Cd{sub 1-x}Zn{sub x}Te devices for cascade solar cell applications. The technique involves a two-stage process for fabricating such devices with a band gap of about 1.7 eV and a transparent contact layer of low-resistivity ZnTe. In the first stage, thin films of Cd, Zn, and Te are deposited in stacked layers as Cd{sub 1-x}An{sub x}Te. The second stage involves hearing and reacting the layers to form the compound. At first, electrodeposition was used for depositing the layers to successfully fabricate Dc{sub 1-x}Zn{sub x}Te thin-film devices. These films were also intrinsically doped with copper. For the first time, transparent ZnTe films of low resistivity were obtained in a two-stage process; preliminary solar cells using films with low Zn content were demonstrated. A second phase of the project involved growing films with higher Zn content (>15%). Such films were grown on CdS-coated substrates for fabricating devices. The effects of the solar-cell processing steps on the Cd{sub 1-x}Zn{sub x}Te and CdS/Cd{sub 1-x}Zn{sub x}Te interfaces were studied; results showed that the nature of the interface depended on the stoichiometry of the Cd{sub 1-x}Zn{sub x}Te thin film. A sharp interface was observed for the CdS/CdTe structures, but the interface became highly diffused as the Zn content in the absorber layer increased above 15%. The interaction between the CdS window layer and the Cd{sub 1-x}Zn{sub x}Te absorber layer was found to result from an exchange reaction between Zn in the absorber layer and the thin CdS film. 14 refs., 10 figs.

  14. Misfit stress relaxation mechanism in CdTe(100) and CdTe/ZnTe(100) on a GaAs(100) highly mismatched heteroepitaxial layer

    Science.gov (United States)

    Nishino, H.; Sugiyama, I.; Nishijima, Y.

    1996-09-01

    We studied the misfit stress in CdTe(100)/GaAs(100). In general, this highly mismatched system initially forms a ``coincidence interface,'' where seven CdTe lattices match with eight GaAs lattices. In this system, the epilayer is elastically strained by the mismatch remaining between both groups of lattices. Afterward, the misfit stress is gradually relaxed with the generation of misfit dislocations. In this work, we derived a new model to describe this misfit relaxation mechanism and verified it with experimental observations. As introducing the effects of the interface modification, we found that the simple force balance between the substrate and epilayer governed the misfit stress. We assume that the relaxation process during growth is similar to that in CdTe/CdZnTe, since the residual misfit was fairly small. By extending the stress relaxation model of CdTe/GaAs, it is possible to explain the strain in CdTe/ZnTe/GaAs, which contains two highly mismatched interfaces. The threading dislocations in HgCdTe, derived from the CdTe buffer, decreased with increasing CdTe thickness. Assuming that the misfit dislocations are generated by bending threading dislocations, we could explain the dislocation reduction by utilizing the above misfit stress relaxation model. In spite of the extremely large mismatch, the structural quality of CdTe(100)/GaAs(100) was improved due to the relatively small strain remaining in the coincidence interface.

  15. Evaluation of ZnO:Al as a contact material to CdZnTe for radiation detector applications (Conference Presentation)

    Science.gov (United States)

    Roy, Utpal N.; Camarda, Giuseppe S.; Cui, Yonggang; Gul, Rubi; Hossain, Anwar; Yang, Ge; James, Ralph B.; Pradhan, Aswini K.; Mundle, Rajeh

    2016-09-01

    Aluminum (Al) doped ZnO with very high Al concentration acts as metal regarding its electrical conductivity. ZnO offers many advantages over the commonly-known metals being used today as electrode materials for nuclear detector fabrication. Often, the common metals show poor adhesion to CdZnTe or CdTe surfaces and have a tendency to peel off. In addition, there is a large mismatch of the coefficients of thermal expansion (CTE) between the metals and underlying CdZnTe, which is one of the reasons for mechanical degradation of the contact. In contrast ZnO has a close match of the CTE with CdZnTe and possesses 8-20 times higher hardness than the commonly-used metals. In this presentation, we will explore and discuss the properties of CdZnTe detectors with ZnO:Al contacts.

  16. Aqueous Phase Synthesis of Red CdX (X=Te,Te/CdS,Te/ZnS) Quantum Dots and Their Toxic Effects%水相合成CdX(X=Te,Te/CdS,Te/ZnS)红色量子点及毒性效应

    Institute of Scientific and Technical Information of China (English)

    王显祥; 黄娟; 靳茹文; 杨中科; 单志; 杨婉身

    2009-01-01

    分别以巯基乙酸(Mercaptoacetic Acid,MA)、还原犁谷胱甘肽(Glutathione,GSH)为稳定剂在水相中直接合成了巯基乙酸CdTe(CdTe-MA)、红色巯基乙酸CdTe/CdS(CdTe/CdS-MA)、巯基乙酸CdTe/ZnS(CdTe/ZnS-MA)及谷胱甘肽CdTe(CdTe-GSH)量子点.其中,CdTe-GSH量子点的量子产率可达47.3%.体外溶血实验证实CdTe/ZnS-MA和CdTe-GSH量子点的溶血率较CdTe-MA和CdTe/CdS-MA低,浓度为0.05 mmol/L的量子点溶血率<5%,达到了生物医用材料的要求.活体实验证实:通过尾静脉方式把量子点注入小鼠体内后,荧光显微镜观察发现高剂量的量子点(0.4mmol/10 g)在体内主要在心、肝、脾、肾组织中分布较多,且引起不同程度的组织病变.

  17. Novel magnetic-fluorescent CS-Fe{sub 3}O{sub 4}@ZnS:Mn/ZnS (core/shell) nanoparticles: Preparation, characterization and damage to bovine serum albumin under UV irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Li, E-mail: liuli5058@yahoo.cn; Xiao, Ling, E-mail: 775706196@qq.com; Cao, Chunhua

    2013-07-15

    Novel magnetic-fluorescent nanoparticles (CS-Fe{sub 3}O{sub 4}@ZnS:Mn/ZnS) combined ZnS:Mn/ZnS semiconductor nanoparticles and Fe{sub 3}O{sub 4} magnetic nanoparticles with chitosan (CS) matrix were prepared and characterized. Characterization results indicate that CS-Fe{sub 3}O{sub 4}@ZnS:Mn/ZnS (core/shell) nanoparticles show superparamagnetic and strong fluorescent properties. Introduction of ZnS shell significantly enhances the photoluminescence intensity by 3.5 times. The saturation magnetization of CS-Fe{sub 3}O{sub 4}@ZnS:Mn/ZnS nanoparticles was 14.85 emu g{sup −1} at room temperature. The interaction and damage of CS-Fe{sub 3}O{sub 4}@ZnS:Mn/ZnS to bovine serum albumin (BSA) under UV irradiation was investigated by ultraviolet–visible and fluorescence spectra. The results show that electrostatic interaction is the major force for the binding processes of BSA to the surface of CS-Fe{sub 3}O{sub 4}@ZnS:Mn/ZnS. The damage of BSA is prone to happen in the presence of CS-Fe{sub 3}O{sub 4}@ZnS:Mn/ZnS under UV irradiation. CS-Fe{sub 3}O{sub 4}@ZnS:Mn/ZnS may be potential candidate for application as photosensitizers in photodynamic therapy, and fluorescence imaging and magnetic resonance imaging contrast agents for theranostics of cancer. - Highlights: • Novel magnetic-fluorescent CS-Fe{sub 3}O{sub 4}@ZnS:Mn/ZnS nanoparticles were synthesized. • CS-Fe{sub 3}O{sub 4}@ZnS:Mn/ZnS possesses superparamagnetic and bright fluorescent properties. • Introduction of ZnS shell significantly enhances the PL intensity by 3.5 times. • BSA molecule was effectively damaged by CS-Fe{sub 3}O{sub 4}@ZnS:Mn/ZnS under UV irradiation. • Magnetic-fluorescent nanoparticles would be potential agents for cancer treatment.

  18. Temperature-Dependent Energy Gap Shift and Thermally Activated Transition in Multilayer CdTe/ZnTe Quantum Dots.

    Science.gov (United States)

    Man, Minh Tan; Lee, Hong Seok

    2015-10-01

    We investigated the influence of growth conditions on carrier dynamics in multilayer CdTe/ZnTe quantum dots (QDs) by monitoring the temperature dependence of the photoluminescence emission energy. The results were analyzed using the empirical Varshni and O'Donnell relations for temperature variation of the energy gap shift. Best fit values showed that the thermally activated transition between two different states occurs due to band low-temperature quenching with values separated by 5.0-6.5 meV. The addition of stack periods in multilayer CdTe/ZnTe QDs plays an important role in the energy gap shift, where the exciton binding energy is enhanced, and, conversely, the exciton-phonon coupling strength is suppressed with an average energy of 19.3-19.8 meV.

  19. Highly sensitive and selective detection of phosphate using novel highly photoluminescent water-soluble Mn-doped ZnTe/ZnSe quantum dots.

    Science.gov (United States)

    Song, Yu; Li, Yang; Liu, Yunling; Su, Xingguang; Ma, Qiang

    2015-11-01

    Herein, the facile method with high selectivity for phosphate ion (Pi) sensing using novel Type-II core/shell Mn: ZnTe/ZnSe quantum dots (QDs) was reported. This was the first time that Mn: ZnTe/ZnSe QDs with highlighted optical properties were used for sensing. The water-soluble Mn: ZnTe/ZnSe QDs with a high quantum yield of 7% were synthesized by aqueous synthetic method. Compared with traditional ZnSe QDs or Mn: ZnSe QDs, the smaller effective band gap, longer wavelength and lower ionization potential (high valence band edge) for effective hole localization made Type-II core/shell Mn: ZnTe/ZnSe QDs to be stable and had high photoluminescence (PL). Only Mg(2+) was found to be able to enhance Mn: ZnTe/ZnSe QDs PL selectively. The mechanism of fluorescence enhancement was attributed to the passivated surface nonradiative relaxation centers of Mn: ZnTe/ZnSe QDs. In the presence of Pi anion, the PL intensity got quenched due to the aggregation species of QDs via electrostatic attraction between Pi and Mg(2+) on the surface of Mn: ZnTe/ZnSe QDs. Therefore, the quenching effect can be used to detect Pi selectively. The PL was observed to be linearly proportional to the Pi analyte concentration in the range from 0.67 to 50.0 μmol/L, with a detection limit of 0.2μ mol/L (S/N=3). The novel "on-off" fluorescence nanosensor for Pi detection was sensitive and convenient in the real analysis application. The reported analytical method of Mn: ZnTe/ZnSe QDs is highly sensitive and selective, which can corroborate the extension of its usages in chemo/ biosensing and bioimaging. Copyright © 2015 Elsevier B.V. All rights reserved.

  20. Development of Portable Uranium Enrichment Measurement Apparatus With CdZnTe Detector

    Institute of Scientific and Technical Information of China (English)

    2008-01-01

    <正>A portable uranium enrichment measurement apparatus with CdZnTe detector manufactured by "eV Products" company was tested in this work. The apparatus consists of a co-planar grid detector based on

  1. Synthesis and properties of 10% Zn layered CdTe thin films by SEL method

    Science.gov (United States)

    Shanmugan, S.; Mutharasu, D.

    2011-10-01

    Te/Cd/Te/Zn/Cd stacked layers were prepared by Stacked Elemental Layer (SEL) Method. All stacks were annealed from 200 °C to 500 °C and the prepared films were confirmed as polycrystalline nature. Cubic CdTe and Hexagonal ZnTe were identified at high annealing temperature. Transmittance spectra emphasized the significance of Zn doping by annealing the stack. The calculated optical constants n and k were 1.52-2.45 and 0.07-0.36 respectively. The band gaps (Eg) were observed between 1.38 and 1.44 eV at above 350 °C. A uniform surface morphology could be observed at high annealing temperatures. The observed results encouraged the Zn doping using SEL method.

  2. MBE growth and characterization of ZnTe epilayers on m-plane sapphire substrates

    Energy Technology Data Exchange (ETDEWEB)

    Nakasu, Taizo; Sun, Wei-Che; Yamashita, Sotaro; Aiba, Takayuki; Taguri, Kosuke [Department of Electrical Engineering and Bioscience, Waseda University, Tokyo 169-8555 (Japan); Kobayashi, Masakazu [Department of Electrical Engineering and Bioscience, Waseda University, Tokyo 169-8555 (Japan); Kagami Memorial Research Institute for Materials Science and Technology, Waseda University, 2-8-26, Tokyo 169-0051 (Japan); Asahi, Toshiaki [Technology Development Center, JX Nippon Mining and Metals Corporation, Hitachi 317-0056 (Japan); Togo, Hiroyoshi [NTT Microsystem Integration Laboratories, Atsugi 243-0198 (Japan)

    2014-07-15

    ZnTe epilayers were grown on transparent (10-10) oriented (m -plane) sapphire substrates by molecular beam epitaxy (MBE). Pole figure imaging was used to study the domain distribution within the layer. (211)-oriented ZnTe domains were formed on m -plane sapphire. The presence of only one kind of (211) ZnTe domain formed on the 2 -tilted m -plane sapphire substrates was confirmed. Thus, single domain (211) ZnTe epilayers can be grown on the m -plane sapphire using MBE. Although differences in the crystal structure and lattice mismatch are large, precise control of the substrate surface lattice arrangement result in the formation of high-quality epitaxial layers. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  3. Synthesis, Structural and Optical Characterization of CdTeSe/ZnSe and CdTeSe/ZnTe Core/Shell Ternary Quantum Dots for Potential Application in Solar Cells

    OpenAIRE

    Hung, Le Xuan; Thang, Pham Nam; Van Nong, Hoang; Yen, Nguyen Hai; Chinh, Vu Đuc; Van Vu, Le; Hien, Nguyen Thi Thuc; Marcillac, Willy Daney,; Hong, Phan Ngoc; Loan, Nguyen Thu; Schwob, Catherine; Maître, Agnès; Liem, Nguyen Quang; Bénalloul, Paul; Coolen, Laurent

    2016-01-01

    International audience; This work presents the results on the fabrication, structural and optical properties of CdTeSe/ZnTe and CdTeSe/ZnSe n monolayers (ML) (with n = 0,1,2,4 and 6 being the nominal shell monolayer thickness) ternary alloyed core/shell quantum dots (QDs). Transmission electron microscopy has been used to observe the shape and size of the QDs. These QDs crystallize at the zinc-blende phase. Raman scattering has been used to characterize the CdTeSe QDs’ alloy composition in th...

  4. Modelling of a Cd1-xZnxTe/ZnTe Single Quantum Well for Laser Diodes

    Science.gov (United States)

    Dehimi, Sai˙d.; Dehimi, Lakhdar; Asar, Tarik; Özçelik, Süleyman

    2016-10-01

    In this paper, the carrier density, temperature and quantum well width effect have been investigated for the optical gain for a Cd1-xZnxTe/ZnTe Zinc-blend strained quantum well structure. The device emits laser radiations in green-yellow-orange. Our results showed that the optical gain significantly increases with the increasing of the carrier density. It also increases with the decreasing of the Zn concentration, the well width and the temperature. In addition, the optimal threshold current density values were determined for three alloy compositions as 0.7, 0.8 and 0.9.

  5. Identification of Ag-acceptors in $^{111}\\!$Ag $^{111}\\!$Cd doped ZnTe and CdTe

    CERN Document Server

    Hamann, J; Deicher, M; Filz, T; Lany, S; Ostheimer, V; Strasser, F; Wolf, H; Wichert, T

    2000-01-01

    Nominally undoped ZnTe and CdTe crystals were implanted with radioactive $^{111}\\!$Ag, which decays to $^{111}\\!$Cd, and investigated by photoluminescence spectroscopy (PL). In ZnTe, the PL lines caused by an acceptor level at 121 meV are observed: the principal bound exciton (PBE) line, the donor-acceptor pair (DAP) band, and the two-hole transition lines. In CdTe, the PBE line and the DAP band that correspond to an acceptor level at 108 meV appear. Since the intensities of all these PL lines decrease in good agreement with the half-life of $^{111}\\!$Ag of 178.8 h, both acceptor levels are concluded to be associated with defects containing a single Ag atom. Therefore, the earlier assignments to substitutional Ag on Zn- and Cd-lattice sites in the respective II-VI semiconductors are confirmed. The assignments in the literature of the S$_1$, S$_2$, and S$_3$ lines in ZnTe and the X$\\scriptstyle^\\textrm{Ag}_{1}\\,\\,,$ X$\\scriptstyle^\\textrm{Ag}_{2}$/ C$\\scriptstyle^\\textrm{Ag}_{1}\\,$ and C$\\scriptstyle^\\textrm{...

  6. Live-monitoring of Te inclusions laser-induced thermo-diffusion and annealing in CdZnTe crystals

    Energy Technology Data Exchange (ETDEWEB)

    Zappettini, A.; Zambelli, N.; Benassi, G.; Calestani, D. [Istituto Materiali Elettronica e Magnetismo – Consiglio Nazionale delle Ricerche, Parma (Italy); Pavesi, M. [Istituto Materiali Elettronica e Magnetismo – Consiglio Nazionale delle Ricerche, Parma (Italy); Istituto di Fisica e Scienze della Terra, Università degli Studi di Parma, Parma (Italy)

    2014-06-23

    The presence of Te inclusions is one of the main factors limiting performances of CdZnTe crystals as X-ray detectors. We show that by means of infrared laser radiation it is possible to move and anneal tellurium inclusions exploiting a thermo-diffusion mechanism. The process is studied live during irradiation by means of an optical microscope equipment. Experimental conditions, and, in particular, energy laser fluence, for annealing inclusions of different dimensions are determined.

  7. Dual roles of ZnS thin layers in significant photocurrent enhancement of ZnO/CdTe nanocable arrays photoanode.

    Science.gov (United States)

    Wang, Xina; Liu, Rong; Wang, Tian; Wang, Baoyuan; Xu, Yang; Wang, Hao

    2013-04-24

    The effect of a ZnS thin layer on the photoelectrochemical property of ZnO/CdTe nanocable arrays-on-indium tin oxide was systematically studied by the successive ion layer absorption and reaction (SILAR) of ZnS. The thickness of CdTe on bare ZnO/CdTe nanocable arrays was optimized to approximately 10 nm to achieve a saturated photocurrent density of 6.5 mA/cm(2). Significant photocurrent enhancement was achieved by gradually increasing the ZnS SILAR cycle number from 0 to 10. A "type I" band alignment with conduction and valence band offsets of 0.58 and 1.52 eV, respectively, was deduced for the CdTe/ZnS interface. The detailed microstructure of the CdTe/ZnS interface and the relationship between the photocurrent and the ZnS thickness indicated that ZnS not only serves as a barrier layer that prevents electron injection from CdTe to the electrolyte but also provides an effective tunneling channel for hole transfers to the electrolyte. A ZnO/CdTe/ZnS nanocable photoanode yielded a saturated photocurrent density of 13.8 mA/cm(2) when the thickness of ZnS was controlled to approximately 2 nm.

  8. Preparation and characterization of ZnTe as an interlayer for CdS/CdTe substrate thin film solar cells on flexible substrates

    Energy Technology Data Exchange (ETDEWEB)

    Feng, Xianjin, E-mail: xianjinfeng@gmail.com; Singh, Kartikay; Bhavanam, Sushma; Palekis, Vasilios; Morel, Don L.; Ferekides, Chris

    2013-05-01

    ZnTe thin films have been prepared on Mo-coated stainless steel substrates by the close spaced sublimation (CSS) technique. Cu-doped ZnTe (ZnTe:Cu) films are prepared by immersing the as-deposited samples in a CuCl–H{sub 2}O solution. The structural and morphological properties of the ZnTe films as a function of substrate temperature are investigated using X-ray diffraction and scanning electron microscopy. CdS/CdTe solar cells with and without the ZnTe and ZnTe:Cu interlayers are prepared and characterized with current–voltage (J–V), spectral response, and capacitance–voltage measurements. The structural and morphological properties of the ZnTe films prepared by CSS are found to be strongly influenced by the substrate temperature. The ‘roll-over’ behavior in the J–V characteristics of the CdS/CdTe solar cells due to a Schottky barrier at the back contact can be eliminated using ZnTe as the interlayer. Preliminary results on the application of ZnTe:Cu films suggest that the open circuit voltage and fill factor can be further improved, depending on processing conditions. - Highlights: ► Thin film CdTe solar cells on flexible stainless steel substrates are prepared. ► Using ZnTe can eliminate the ‘roll-over’ behavior in the current–voltage curve. ► Incorporating Cu can further improve the open circuit voltage and fill factor.

  9. Growth and characterization of CdTe and CdZnTe crystals for substrate application

    Science.gov (United States)

    Azoulay, Moshe; Zilber, Raphael; Shusterman, Sergy; Goldgirsh, Alex; Zontag, Itzhak

    2003-01-01

    During the last decade we have investigated the synthesis, growth and characterization of CdTe and CdZnTe semiconductor compounds. As a result, substrate crystals, suitable for mercury cadmium telluride thin film growth are prepared. The emphasis will be given to the investigation of the thermal regime during growth, reflected at the solid liquid interface shape and its influence on the crystalline quality. Seeded and unseeded growth experiments are compared in terms of structural crystalline quality. Seeded and unseeded growth experiments are compared in terms of structural crystalline perfection as well as single crystal yield. The effect of thermal annealing on IR transmittance, precipitates and inclusions will be discussed in detail. Moreover, we will show the recent new trends for simulation of crystal growth processes by CRYSVUN software as well as practical implementation of calculated data for the grwoth of II-VI crystals. Preliminary study on the vapor phase control during growth and crystal cooling procedures will also be discussed.

  10. The ultraviolet detection component based on Te-Cs image intensifier

    Science.gov (United States)

    Qian, Yunsheng; Zhou, Xiaoyu; Wu, Yujing; Wang, Yan; Xu, Hua

    2017-05-01

    Ultraviolet detection technology has been widely focused and adopted in the fields of ultraviolet warning and corona detection for its significant value and practical meaning. The component structure of ultraviolet ICMOS, imaging driving and the photon counting algorithm are studied in this paper. Firstly, the one-inch and wide dynamic range CMOS chip with the coupling optical fiber panel is coupled to the ultraviolet image intensifier. The photocathode material in ultraviolet image intensifier is Te-Cs, which contributes to the solar blind characteristic, and the dual micro-channel plates (MCP) structure ensures the sufficient gain to achieve the single photon counting. Then, in consideration of the ultraviolet detection demand, the drive circuit of the CMOS chip is designed and the corresponding program based on Verilog language is written. According to the characteristics of ultraviolet imaging, the histogram equalization method is applied to enhance the ultraviolet image and the connected components labeling way is utilized for the ultraviolet single photon counting. Moreover, one visible light video channel is reserved in the ultraviolet ICOMS camera, which can be used for the fusion of ultraviolet and visible images. Based upon the module, the ultraviolet optical lens and the deep cut-off solar blind filter are adopted to construct the ultraviolet detector. At last, the detection experiment of the single photon signal is carried out, and the test results are given and analyzed.

  11. Molecular interaction investigation between three CdTe:Zn(2+) quantum dots and human serum albumin: A comparative study.

    Science.gov (United States)

    Huang, Shan; Qiu, Hangna; Liu, Yi; Huang, Chusheng; Sheng, Jiarong; Su, Wei; Xiao, Qi

    2015-12-01

    Water-soluble Zn-doped CdTe quantum dots (CdTe:Zn(2+) QDs) have attracted great attention in biological and biomedical applications. In particular, for any potential in vivo application, the interaction of CdTe:Zn(2+) QDs with human serum albumin (HSA) is of greatest importance. As a step toward the elucidation of the fate of CdTe:Zn(2+) QDs introduced to organism, the molecular interactions between CdTe:Zn(2+) QDs with three different sizes and HSA were systematically investigated by spectroscopic techniques. Three CdTe:Zn(2+) QDs with maximum emission of 514 nm (green QDs, GQDs), 578 nm (yellow QDs, YQDs), and 640 nm (red QDs, RQDs) were tested. The binding of CdTe:Zn(2+) QDs with HSA was a result of the formation of HSA-QDs complex and electrostatic interactions played major roles in stabilizing the complex. The Stern-Volmer quenching constant, associative binding constant, and corresponding thermodynamic parameters were calculated. The site-specific probe competitive experiments revealed that the binding location of CdTe:Zn(2+) QDs with HSA was around site I. The microenvironmental and conformational changes of HSA induced by CdTe:Zn(2+) QDs were analyzed. These results suggested that the conformational change of HSA was dramatically at secondary structure level and the biological activity of HSA was weakened in the present of CdTe:Zn(2+) QDs with bigger size.

  12. Prototype Imaging Cd-Zn-Te Array Detector

    CERN Document Server

    Bloser, P F; Grindlay, J E; Shah, K

    1998-01-01

    We describe initial results of our program to develop and test Cd-Zn-Te (CZT) detectors with a pixellated array readout. Our primary interest is in the development of relatively thick CZT detectors for use in astrophysical coded aperture telescopes with response extending over the energy range $\\sim 10-600$ keV. The coded aperture imaging configuration requires only relatively large area pixels (1-3 mm), whereas the desired high energy response requires detector thicknesses of at least 3-5 mm. We have developed a prototype detector employing a 10 x 10 x 5 mm CZT substrate and 4 x 4 pixel (1.5 mm each) readout with gold metal contacts for the pixels and continuous gold contact for the bias on the opposite detector face. This MSM contact configuration was fabricated by RMD and tested at Harvard for uniformity, efficiency and spatial as well as spectral resolution. We have developed an ASIC readout (IDE-VA-1) and analysis system and report results, including $\\sim 4$% (FWHM) energy resolution at 60 keV. A protot...

  13. Prototype imaging Cd-Zn-Te array detector

    Energy Technology Data Exchange (ETDEWEB)

    Bloser, P.F.; Narita, T.; Grindlay, J.E. [Harvard-Smithsonian Center for Astrophysics, Cambridge, MA (United States); Shah, K. [Radiation Monitoring Devices, Inc., Watertown, MA (United States)

    1998-12-31

    The authors describe initial results of their program to develop and test Cd-Zn-Te (CZT) detectors with a pixellated array readout. Their primary interest is in the development of relatively thick CZT detectors for use in astrophysical coded aperture telescopes with response extending over the energy range {approximately}10--600 keV. The coded aperture imaging configuration requires only relatively large area pixels (1--3 mm), whereas the desired high energy response requires detector thicknesses of at least 3--5 mm. They have developed a prototype detector employing a 10 x 10 x 5 mm CZT substrate and 4 x 4 pixel (1.5 mm each) readout with gold metal contacts for the pixels and continuous gold contact for the bias on the opposite detector face. This MSM contact configuration was fabricated by RMD and tested at Harvard for uniformity, efficiency and spatial as well as spectral resolution. The authors have developed an ASIC readout (IDE-VA-1) and analysis system and report results, including {approximately}4% (FWHM) energy resolution at 60 keV. A prototype design for a full imaging detector array is discussed.

  14. The X-ray response of CdZnTe

    CERN Document Server

    Owens, A; Andersson, H; Gagliardi, T; Krumrey, M; Nenonen, S; Peacock, A; Taylor, I; Troeger, L

    2002-01-01

    We report the results of a series of X-ray measurements on a 3.1 mm sup 2 , 2.5 mm thick CdZnTe detector carried out at the BESSY II and HASYLAB synchrotron radiation facilities. The detector energy response function was found to be linear over the energy range 2.3-100 keV with an average rms non-linearity of 0.6%, consistent with statistics. At room temperature, under full-area illumination, the FWHM energy resolution was 1.6 keV at 5.9 keV rising to 2.9 keV at 59.54 keV. At a reduced detector temperature of -20 deg. C, these fall to 380 and 818 eV FWHM, respectively. Under pencil beam illumination, the measured energy resolution at 2.5 keV was 360 eV FWHM rising to 1558 eV at 100 keV. By best fitting the expected resolution function to the experimental data, we derive a value for the Fano factor of (0.099+-0.02). Cooling the detector to -50 deg. C, resulted in no noticeable difference in DELTA E above 60 keV, but a 40% reduction at energies <10 keV. At 5.9 keV, the measured resolution under full-area ill...

  15. Large area thin film CdTe and Zn(x)Cd(1-x)Te heterojunction solar cells

    Science.gov (United States)

    Chu, T. L.; Chu, S. S.; Firszt, F.; Naseem, H. A.; Stawski, R.

    Thin film CdTe heterojunction solar cells have been prepared by the deposition of p-type CdTe films on CdS/SnO2:F/glass substrates using chemical vapor deposition (CVD) and close-spaced sublimation (CSS) techniques. The relative merits of the two techniques are discussed, and the characteristics of solar cells prepared by CVD and CSS techniques are compared. In addition, the properties of Zn(x)Cd(1-x)Te have been investigated.

  16. Hg1-xCdxTe vapor deposition on CdZnTe substrates by Closed Space Sublimation technique

    Science.gov (United States)

    Rubio, Sandra; Sochinskii, Nikolai V.; Repiso, Eva; Tsybrii, Zinoviia; Sizov, Fiodor; Plaza, Jose Luis; Diéguez, Ernesto

    2017-01-01

    Closed Space Sublimation (CSS) technique has been studied to deposit Hg1-xCdxTe polycrystalline films on CdZnTe substrates at the improved pressure-temperature conditions. The experimental results on film characterization suggest that the CSS optimal conditions are the argon atmospheric pressure (1013 mbar) and the deposition temperature in the range of 500-550 °C. These conditions provide macro-defect free Hg1-xCdxTe films with the uniform size and surface distribution of polycrystals.

  17. ZnTe Semiconductor-Polymer Gel Composited Electrolyte for Conversion of Solar Energy

    Directory of Open Access Journals (Sweden)

    Wonchai Promnopas

    2014-01-01

    Full Text Available Nanostructured cubic p-type ZnTe for dye sensitized solar cells (DSSCs was synthesized from 1 : 1 molar ratio of Zn : Te by 600 W and 900 W microwave plasma for 30 min. In this research, their green emissions were detected at the same wavelengths of 563 nm, the energy gap (Eg at 2.24 eV, and three Raman shifts at 205, 410, and 620 cm−1. The nanocomposited electrolyte of quasisolid state ZnO-DSSCs was in correlation with the increase in the JSC, VOC, fill factor (ff, and efficiency (η by increasing the wt% of ZnTe-GPE (gel polymer electrolyte to an optimum value and decreased afterwards. The optimal ZnO-DSSC performance was achieved for 0.20 wt% ZnTe-GPE with the highest photoelectronic energy conversion efficiency at 174.7% with respect to that of the GPE without doping of p-type ZnTe.

  18. Optical properties of single ZnTe nanowires grown at low temperature

    Energy Technology Data Exchange (ETDEWEB)

    Artioli, A.; Stepanov, P.; Den Hertog, M.; Bougerol, C.; Genuist, Y.; Donatini, F.; André, R.; Nogues, G.; Tatarenko, S.; Ferrand, D.; Cibert, J. [Inst NEEL, Universiy of Grenoble Alpes, F-38042 Grenoble (France); Inst NEEL, CNRS, F-38042 Grenoble (France); Rueda-Fonseca, P. [Inst NEEL, Universiy of Grenoble Alpes, F-38042 Grenoble (France); Inst NEEL, CNRS, F-38042 Grenoble (France); INAC, CEA and Université de Grenoble, 17 rue des Martyrs, 38054 Grenoble (France); Bellet-Amalric, E.; Kheng, K. [INAC, CEA and Université de Grenoble, 17 rue des Martyrs, 38054 Grenoble (France)

    2013-11-25

    Optically active gold-catalyzed ZnTe nanowires have been grown by molecular beam epitaxy, on a ZnTe(111) buffer layer, at low temperature (350 °C) under Te rich conditions, and at ultra-low density (from 1 to 5 nanowires per μm{sup 2}). The crystalline structure is zinc blende as identified by transmission electron microscopy. All nanowires are tapered and the majority of them are <111> oriented. Low temperature micro-photoluminescence and cathodoluminescence experiments have been performed on single nanowires. We observe a narrow emission line with a blue-shift of 2 or 3 meV with respect to the exciton energy in bulk ZnTe. This shift is attributed to the strain induced by a 5 nm-thick oxide layer covering the nanowires, and this assumption is supported by a quantitative estimation of the strain in the nanowires.

  19. Synthesis and characterization of small size fluorescent LEEH caped blue emission ZnTe quantum dots

    Directory of Open Access Journals (Sweden)

    Patnaik Sumanta Kumar

    2017-04-01

    Full Text Available We report here for the first time the synthesis of LEEH caped very small size (2 nm ZnTe quantum dots at low temperature (less than 100 °C using a simple chemical route. The effects of aging and stirring time on the absorption spectra of the quantum dots were investigated. The synthesized nanocrystal (NC was characterized by PL, TEM, XRD and the formation of very small size quantum dots having FCC structure was confirmed. Further, blue emission from the prepared sample was observed during exposure to monochromatic UV radiation. ZnTe NCs obtained in this study were found to be more stable compared to those presented in literature reports. ZnTe NCs may be considered as a new material in place of CdTe for optoelectronics devices.

  20. MBE growth and properties of Cr-doped ZnTe on GaAs(001)

    Energy Technology Data Exchange (ETDEWEB)

    Hou, X.J. [Data Storage Institute, 5 Engineering Drive 1, Singapore 117608 (Singapore); Information Storage Materials Laboratory, Electrical and Computer Engineering Department, National University of Singapore, 4 Engineering Drive 3, Singapore 117576 (Singapore); Teo, K.L. [Information Storage Materials Laboratory, Electrical and Computer Engineering Department, National University of Singapore, 4 Engineering Drive 3, Singapore 117576 (Singapore)]. E-mail: eleteokl@nus.edu.sg; Sreenivasan, M.G. [Data Storage Institute, 5 Engineering Drive 1, Singapore 117608 (Singapore); Information Storage Materials Laboratory, Electrical and Computer Engineering Department, National University of Singapore, 4 Engineering Drive 3, Singapore 117576 (Singapore); Liew, T. [Data Storage Institute, 5 Engineering Drive 1, Singapore 117608 (Singapore); Information Storage Materials Laboratory, Electrical and Computer Engineering Department, National University of Singapore, 4 Engineering Drive 3, Singapore 117576 (Singapore); Chong, T.C. [Data Storage Institute, 5 Engineering Drive 1, Singapore 117608 (Singapore); Information Storage Materials Laboratory, Electrical and Computer Engineering Department, National University of Singapore, 4 Engineering Drive 3, Singapore 117576 (Singapore)

    2006-05-18

    Cr-doped ZnTe diluted magnetic semiconductor thin films were grown on semi-insulating GaAs [001] substrates at low temperature by solid-source molecular-beam epitaxy. Zn{sub 1-x}Cr {sub x}Te samples with Cr concentrations x 0.026 and x = 0.141 were prepared. The magnetization versus magnetic field (M-H) measurement showed a clear hysteresis loop at low temperature for these samples. For higher Cr doping with nominal Cr concentration of x > 0.18, we obtained a Curie temperature of 365 K; the highest reported so far for thin film sample. However, this strong ferromagnetic momentum could possibly be due to Cr{sub 1-{delta}}Te precipitate in the Cr-doped ZnTe system.

  1. Ethanol gas sensing by Zn-doped CdS/CdTe nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Prabhu, M., E-mail: prabhumku@gmail.com; Manikandan, V. S.; Soundararajan, N.; Ramachandran, K. [School of Physics, Madurai Kamaraj University, Madurai – 625 021 (India)

    2016-05-23

    Zn-doped CdS/CdTe nanoparticles (NPs) were synthesized and studied here for gas sensing. The crystallographic properties of the samples were studied by X-ray diffraction (XRD), which shows cubic structure for CdS and CdTe NPs. The three longitudinal optical phonon modes at 298, 595 and 895 cm{sup −1} were obtained from Raman spectrum and this also reveals the cubic structure of CdS NPs. The band gap for Zn-doped CdS/CdTe NPs increased slightly when compared with pure sample. The ethanol gas sensing in CdS/CdTe NPs shows an enhancement on Zn substitution.

  2. Study of ammonium fluoride passivation time on CdZnTe bulk crystal wafers

    Energy Technology Data Exchange (ETDEWEB)

    Bensalah, H.; Crocco, J.; Carcelen, V.; Plaza, J.L.; Zheng, Q.; Dieguez, E. [Crystal Growth Laboratory, Departamento de Fisica de Materiales, Universidad Autonoma de Madrid, Cantoblanco, 28049 Madrid (Spain); Marchini, L. [IMEM-CNR, Parma (Italy); Zanichelli, M. [Department of Physics, University of Parma (Italy); Dominguez, G.; Soriano, L. [Departamento de Fisica Aplicada and Instituto de Ciencias de Materiales Nicolas Cabrera, Universidad Autonoma de Madrid, Cantoblanco, 28049 Madrid (Spain)

    2011-07-15

    The chemical etching and the passivation processes of CdZnTe wafers were studied. The treatment effects were tested through an X-Ray Photoelectron Spectroscopy (XPS) analysis and I-V measurement. The chemical etching in 2%Br-MeOH solution may effectively remove the damaged layer and improve the ohmic contact between CdZnTe wafer and Au electrodes making rich the surface with Te. After different etching times, the CdZnTe wafers were passivated with NH{sub 4}F/H{sub 2}O{sub 2}.CdZnTe wafer passivated immediately after etching showed the best passivation efficiency because the enriched Te on the surface was fully oxidized to TeO{sub 2}, which results in the thickest oxide layer, and the most stoichiometric surface. Also the surface leakage current was reduced in comparison with the sample passivated 24 h after etching. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  3. X and {gamma}-Ray imaging CdTe/CdZnTe detectors. From material to imaging; Imagerie X et {gamma}. Detecteurs CdTe/CdZnTe. Du materiau a l'imageur

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1999-07-01

    This document presents the recent advances made by the Laboratory of electronics and computer science technologies (Leti) of the French atomic energy commission (CEA) in the domain of semiconductor detectors for X- and {gamma}-ray imaging systems. The new generation of detectors is based on the use of cadmium telluride CdTe or its compound CdZnTe, in association with integrated read-out electronics. The advantages of direct conversion for X-ray and {gamma}-ray detectors and the choice of CdTe is presented first. Then some applications of the CdTe detector are presented: high-energy X-ray tomograph for the control of radioactive waste drums, high definition X-ray imager for medical applications, high-energy X-ray imager for military simulation programs, {gamma}-ray imager for astrophysics applications, and a medical gamma camera to replace the standard Anger camera used in nuclear medicine. (J.S.)

  4. Tandem Solar Cells from Solution-Processed CdTe and PbS Quantum Dots Using a ZnTe-ZnO Tunnel Junction.

    Science.gov (United States)

    Crisp, Ryan W; Pach, Gregory F; Kurley, J Matthew; France, Ryan M; Reese, Matthew O; Nanayakkara, Sanjini U; MacLeod, Bradley A; Talapin, Dmitri V; Beard, Matthew C; Luther, Joseph M

    2017-02-08

    We developed a monolithic CdTe-PbS tandem solar cell architecture in which both the CdTe and PbS absorber layers are solution-processed from nanocrystal inks. Due to their tunable nature, PbS quantum dots (QDs), with a controllable band gap between 0.4 and ∼1.6 eV, are a promising candidate for a bottom absorber layer in tandem photovoltaics. In the detailed balance limit, the ideal configuration of a CdTe (Eg = 1.5 eV)-PbS tandem structure assumes infinite thickness of the absorber layers and requires the PbS band gap to be 0.75 eV to theoretically achieve a power conversion efficiency (PCE) of 45%. However, modeling shows that by allowing the thickness of the CdTe layer to vary, a tandem with efficiency over 40% is achievable using bottom cell band gaps ranging from 0.68 and 1.16 eV. In a first step toward developing this technology, we explore CdTe-PbS tandem devices by developing a ZnTe-ZnO tunnel junction, which appropriately combines the two subcells in series. We examine the basic characteristics of the solar cells as a function of layer thickness and bottom-cell band gap and demonstrate open-circuit voltages in excess of 1.1 V with matched short circuit current density of 10 mA/cm(2) in prototype devices.

  5. Unique formation of two high-nuclearity metallamacrocycles from a mononuclear complex [Zn(dmpzdtc)2] (dmpzdtc=3,5-dimethylpyrazole-1-dithiocarboxylate) via CS2 elimination.

    Science.gov (United States)

    Li, Hong-Xi; Wu, Hua-Zhou; Zhang, Wen-Hua; Ren, Zhi-Gang; Zhang, Yong; Lang, Jian-Ping

    2007-12-21

    Dissolution of a mononuclear complex [Zn(dmpzdtc)2] in BrCH2CH2Br or DMF saturated with water followed by CS2 elimination led to the formation of two unique high-nuclearity metallamacrocyclic complexes, [Zn4(micro-dmpz)6(micro-OH)2]2 and [Zn4(micro-dmpz)6(micro-OH)2]4.

  6. Growth and Crystal Orientation of ZnTe on m-Plane Sapphire with Nanofaceted Structure

    Science.gov (United States)

    Nakasu, Taizo; Sun, Wei-Che; Kobayashi, Masakazu; Asahi, Toshiaki

    2016-11-01

    ZnTe thin films on sapphire substrate with nanofaceted structure have been studied. The nanofaceted structure of the m-plane (10-10) sapphire was obtained by heating the substrate at above 1100°C in air, and the r-plane (10-12) and S-plane (1-101) were confirmed. ZnTe layers were prepared on the nanofaceted m-plane sapphire substrates by molecular beam epitaxy (MBE). The effect of the nanofaceted structure on the orientation of the thin films was examined based on x-ray diffraction (XRD) pole figures. Transmission electron microscopy (TEM) was also employed to characterize the interface structures. The ZnTe layer on the nanofaceted m-plane sapphire substrate exhibited (331)-plane orientation, compared with (211)-plane without the nanofaceted structure. After thermal treatment, the m-plane surface vanished and (211) layer could not be formed because of the lack of surface lattice matching. On the other hand, (331)-plane thin film was formed on the nanofaceted m-plane sapphire substrate, since the (111) ZnTe domains were oriented on the S-facet. The orientation of the ZnTe epilayer depended on the atomic ordering on the surface and the influence of the S-plane.

  7. Optical properties of embedded ZnTe nanocrystals in SiO{sub 2} thin layer

    Energy Technology Data Exchange (ETDEWEB)

    Ahmed, F.; Naciri, A.E. [Universite Paul Verlaine-Metz, Laboratoire LPMD, 1 Bd Arago, 57078 Metz (France); Grob, J.J. [InESS, 23 rue du Loess-B20, 67037 Strasbourg Cedex 2 (France)

    2010-07-15

    We have studied the optical properties of ZnTe nanocrystals (ZnTe-nc) embedded in a SiO{sub 2} matrix by spectroscopic ellipsometry. The ZnTe-nc are embedded in a SiO{sub 2} matrix by ion implantation technique. The dose of 2.9 x 10{sup 16} cm{sup -2} of tellurium and zinc ions are implanted in a 250 nm thick SiO{sub 2} layer thermally grown on Si with respective implantation energies of 180 and 115 keV. Subsequent thermal treatments at 700 C lead to the formation of ZnTe-nc. Their size is characterized by transmission electron microscopy. Variable angle ellipsometric measurements are performed in air at room temperature at angles of incidence of 55, 60, and 65 . By taking into account defects caused by ion implantation in silica matrix, the critical points (CPs) dispersion model is used in order to extract the optical responses of the ZnTe-nc. The determined dielectric function spectra reveals distinct structures attributed to direct band gap and optical transition at higher energy. The observed structures are analyzed by fitting second derivative spectrum of the imaginary part of dielectric function with analytic CP line shapes. Results show good agreement with CPs data. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  8. The synthesis of large-diameter ZnTe crystal for THz emitting and detection

    Science.gov (United States)

    Liu, Hang; Bai, Wei; Feng, Jiatai; Jie, Wanqi

    2017-10-01

    A high-quality, large-size ZnTe ingot with the diameter of 60 mm and the length of 80 mm were prepared by the modified temperature gradient solvent method, where the Te rich solution acted as both solubility promoter and reactant. Using this method, the crystallization temperature was reduced from 1568 K to 1333 K, plus, the crystal defects could be reduced in some extent due to the lower zinc partial pressure. Few Te inclusions are found in the as-grown ZnTe crystal with the bulk factor less than 0.1%. X-ray diffraction (XRD), infrared transmission microscope, fourier transform infrared (FT-IR) spectrometer, ultraviolet-visible (UV-Vis) spectrophotometer were used to analyze the qualities and properties of the ZnTe crystals. The infrared transmittance over the wavenumber range from 500 to 4000 cm-1 is about 60% and the band gap is about 2.23 eV at the room temperature. The FWHM of the detection pulse with the THz time-domain spectroscopy (THz-TDS) is about 0.34 ps. Besides, both the radiation and detection pulse have a wide frequency distribution about 3 THz at the room temperature. These results strongly indicate that the high-quality ZnTe crystal synthesized by the temperature gradient solvent method is superior for THz device applications.

  9. Photoelectric converters on Cr/x/Te/y/-Zn/x/Cd/1-x/S heterojunction

    Science.gov (United States)

    Konstantinova, E. M.; Stratieva, N. R.

    The layer properties of Zn(x)Cd(1-x)S(x) are are investigated, and the use of these materials in heterojunction photocells and convertors is evaluated. Results show that the calculated lattice mismatch of the semiconductor decreases with an increase of the Zn content in the solid solutions. A Cr(x)Te(y)-Zn(x)Cd(1-x)S heterojunction is fabricated and is found to have an increase in efficiency of 1% when the open-circuit voltage is raised by about 150 mV and the other parameters are held constant. The open-circuit voltage for photocells based on Cr(x)Te(y) and Zn(x)Cd(1-x)S, with x = 0.05-0.3, is measured under 80 mW/sq cm illumination, and is shown to be lower than the open circuit voltages for Cr(x)Te(y)-Zn(x) Cd(1-x)S samples. In addition, the I-V characteristics of the samples are determined. It is concluded that the wide spectral sensitivity, the high open-circuit voltage, as well as satisfactory conversion efficiencies, of solar cells based on Cr(x)Te(y)-Zn(x)Cd(1-x)S will allow the development of solar energy convertors with improved parameters.

  10. Photoelectric converters on Cr/x/Te/y/-Zn/x/Cd/1-x/S heterojunction

    Energy Technology Data Exchange (ETDEWEB)

    Konstantinova, E.M.; Stratieva, N.R.

    1982-01-01

    The layer properties of Zn(x)Cd(1-x)S(x) are investigated, and the use of these materials in heterojunction photocells and convertors is evaluated. Results show that the calculated lattice mismatch of the semiconductor decreases with an increase of the Zn content in the solid solutions. A Cr(x)Te(y)-Zn(x)Cd(1-x)S heterojunction is fabricated and is found to have an increase in efficiency of 1% when the open-circuit voltage is raised by about 150 mV and the other parameters are held constant. The open-circuit voltage for photocells based on Cr(x)Te(y) and Zn(x)Cd(1-x)S, with x 0.05-0.3, is measured under 80 mW/sq cm illumination, and is shown to be lower than the open circuit voltages for Cr(x)Te(y)-Zn(x) Cd(1-x)S samples. In addition, the I-V characteristics of the samples are determined. It is concluded that the wide spectral sensitivity, the high open-circuit voltage, as well as satisfactory conversion efficiencies, of solar cells based on Cr(x)Te(y)-Zn(x)Cd(1-x)S will allow the development of solar energy convertors with improved parameters.

  11. CdTe nBn photodetectors with ZnTe barrier layer grown on InSb substrates

    Science.gov (United States)

    He, Zhao-Yu; Campbell, Calli M.; Lassise, Maxwell B.; Lin, Zhi-Yuan; Becker, Jacob J.; Zhao, Yuan; Boccard, Mathieu; Holman, Zachary; Zhang, Yong-Hang

    2016-09-01

    We have demonstrated an 820 nm cutoff CdTe nBn photodetector with ZnTe barrier layer grown on an InSb substrate. At room temperature, under a bias of -0.1 V, the photodetector shows Johnson and shot noise limited specific detectivity (D*) of 3 × 1013 cm Hz1/2/W at a wavelength of 800 nm and 2 × 1012 cm Hz1/2/W at 200 nm. The D* is optimized by using a top contact design of ITO/undoped-CdTe. This device not only possesses nBn advantageous characteristics, such as generation-recombination dark current suppression and voltage-bias-addressed two-color photodetection, but also offers features including responsivity enhancements by deep-depletion and by using a heterostructure ZnTe barrier layer. In addition, this device provides a platform to study nBn device physics at room temperature, which will help us to understand more sophisticated properties of infrared nBn photodetectors that may possess a large band-to-band tunneling current at a high voltage bias, because this current is greatly suppressed in the large-bandgap CdTe nBn photodetector.

  12. Emission variation in infrared (CdSeTe)/ZnS quantum dots conjugated to antibodies

    Energy Technology Data Exchange (ETDEWEB)

    Jaramillo Gómez, J.A. [UPIITA – Instituto Politécnico Nacional, México D. F. 07320, México (Mexico); Casas Espinola, J.L., E-mail: jlcasas@esfm.ipn.mx [ESFM – Instituto Politécnico Nacional, México D. F. 07738, México (Mexico); Douda, J. [UPIITA – Instituto Politécnico Nacional, México D. F. 07320, México (Mexico)

    2014-11-15

    The paper presents the photoluminescence (PL) and Raman scattering investigations of infrared CdSeTe/ZnS quantum dots (QDs) with emission at 800 nm (1.60 eV) in nonconjugated states and after the conjugation to the anti-papilloma virus antibodies (Ab). The Raman scattering study has shown that the CdSeTe core includes two layers with different material compositions such as: CdSe{sub 0.5}Te{sub 0.5} and CdSe{sub 0.7}Te{sub 0.3}. PL spectra of nonconjugated CdSeTe/ZnS QDs are characterized by two Gaussian shape PL bands related to exciton emission in the CdSeTe core and in intermediate layer at the core/shell interface. PL spectra of bioconjugated QDs have changed essentially: the main PL band related to the core emission shifts into high energy and become asymmetric. The energy diagram of double core/shell CdSeTe/ZnS QDs has been analyzed to explain the PL spectrum of nonconjugated QDs and its transformation at the bioconjugation to the papiloma virus antibodies. It is shown that the PL spectrum transformation in bioconjugated QDs can be a powerful technique for biology and medicine.

  13. Emission variation in infrared (CdSeTe)/ZnS quantum dots conjugated to antibodies

    Science.gov (United States)

    Jaramillo Gómez, J. A.; Casas Espinola, J. L.; Douda, J.

    2014-11-01

    The paper presents the photoluminescence (PL) and Raman scattering investigations of infrared CdSeTe/ZnS quantum dots (QDs) with emission at 800 nm (1.60 eV) in nonconjugated states and after the conjugation to the anti-papilloma virus antibodies (Ab). The Raman scattering study has shown that the CdSeTe core includes two layers with different material compositions such as: CdSe0.5Te0.5 and CdSe0.7Te0.3. PL spectra of nonconjugated CdSeTe/ZnS QDs are characterized by two Gaussian shape PL bands related to exciton emission in the CdSeTe core and in intermediate layer at the core/shell interface. PL spectra of bioconjugated QDs have changed essentially: the main PL band related to the core emission shifts into high energy and become asymmetric. The energy diagram of double core/shell CdSeTe/ZnS QDs has been analyzed to explain the PL spectrum of nonconjugated QDs and its transformation at the bioconjugation to the papiloma virus antibodies. It is shown that the PL spectrum transformation in bioconjugated QDs can be a powerful technique for biology and medicine.

  14. Synthesis and fluorescence properties of water-soluble CdZnTe quantum dots%水溶性 CdZnTe 量子点制备及光谱性能

    Institute of Scientific and Technical Information of China (English)

    陈燕清; 龙冠虹

    2014-01-01

    以巯基丙酸(MPA)为修饰剂,在水溶液中制备出 CdZnTe 量子点(QDs)。研究了 ZnCd 摩尔比,pH,反应时间等因素对 CdZnTe 量子点荧光性能的影响。为了进一步改善 CdZnTe 量子点的水溶性,采用聚乙烯亚胺(PEI)对 CdZnTe 量子点进一步进行包裹,探讨了前驱体溶液 pH 对 PEI 包裹 CdZnTe 量子点荧光性能的影响。相比于 CdTe 量子点,CdZnTe 量子点具有更强的荧光性能,PEI 修饰的 CdZnTe 量子点的稳定性更好。通过荧光光谱仪,红外光谱仪,X-射线粉末衍射仪,透射电镜对所制得量子点进行了表征。%Water-soluble CdZnTe quantum dots (QDs)were synthesized in aqueous solution by using mer-captopropionic acid (MPA)as stabilizer.The influence of the molar ratio of CdZn,pHand aging time on photoluminescence of obtained QDs had been studied.To further improve the solubility of CdZnTe QDs, surfaces of water-soluble quantum dots were modified by polyethyleneimine (PEI),and the effect of pH on CdZnTe QDs coated with PEI was discussed as well.CdZnTe QDs acquired better photoluminescence and decreased biological toxicity compared with CdTe QDs.The modification using PEI highly enhanced the lu-minescent property of CdZnTe QDs.The water-soluble CdZnTe QDs were characterized by fluorescence e-mission spectra,infrared spectra (IR),transmission electron microscopy (TEM),and X-ray powder diffrac-tion (XRD).

  15. Degradation mechanisms studies in CdS/CdTe solar cells with ZnTe:Cu/Au back contact

    Science.gov (United States)

    Morgan, D.; Tang, J.; Kaydanov, V.; Ohno, T. R.; Trefny, J. U.

    1999-03-01

    CdS/CdTe/ZnTe:Cu/Au solar cells were fabricated and tested under stressed conditions including enhanced temperature, forward and reverse bias, open circuit, dark and light. Discussion of results was focused mostly on the development of the back contact Schottky diode (increase in series resistance). Changes in the cell parameters were detected based on the analysis of the dynamic resistance of a cell (dV/dJ) at forward biases. A possible role of electromigration of the Cu dopant was discussed.

  16. Degradation mechanisms studies in CdS/CdTe solar cells with ZnTe:Cu/Au back contact

    Energy Technology Data Exchange (ETDEWEB)

    Morgan, D.; Tang, J.; Kaydanov, V.; Ohno, T.R.; Trefny, J.U. [Department of Physics, Colorado School of Mines, Golden, Colorado 80401 (United States)

    1999-03-01

    CdS/CdTe/ZnTe:Cu/Au solar cells were fabricated and tested under stressed conditions including enhanced temperature, forward and reverse bias, open circuit, dark and light. Discussion of results was focused mostly on the development of the back contact Schottky diode (increase in series resistance). Changes in the cell parameters were detected based on the analysis of the dynamic resistance of a cell (dV/dJ) at forward biases. A possible role of electromigration of the Cu dopant was discussed. {copyright} {ital 1999 American Institute of Physics.}

  17. Anomalous effect of phonon wind on lateral migration of excitons in ultrathin quantum CdTe/ZnTe well

    CERN Document Server

    Onishchenko, E E; Zajtsev, V V

    2001-01-01

    The effect of the acoustic phonons nonequilibrium flux on the photoluminescence of the CdTe/ZnTe thin quantum well, excited quasi-resonantly by the He-Ne-laser is studied. It is established that the phonon flux leads to the change in the form of the quantum well luminescence band even by low generation capacities. It is assumed that the nonequilibrium phonons flux stimulates the excitons migration in the quantum well plane, conditioned by the tunnel transitions between the potential local minima, which are accompanied by the phonons induced emission

  18. A first-principles study on polar hexagonal Cs2TeM3O12 (M = W, Mo): New visible-light responsive photocatalyst

    Science.gov (United States)

    Zahedi, Ehsan; Hojamberdiev, Mirabbos

    2017-08-01

    The crystal structures, electro-optical properties, and charge carrier effective masses of Cs2TeW3O12 and Cs2TeMo3O12 with hexagonal, polar and non-centrosymmetric crystal structure were investigated based on density functional theory. Cs2TeW3O12 and Cs2TeMo3O12 are found to be indirect K (1/3, 1/3, 0) → G (0, 0, 0) band gap semiconductors (Eg > 3 eV) with small effective masses of photogenerated charge carriers. The mixing of octahedrally coordinated d° transition metal cations (W6+ and Mo6+) with the filled p orbitals of the oxygen ligands leads to the formation of some W5+/Mo5+ sites and splitting of d orbitals into the partially filled t2g (dxy, dyz, and dzx) orbitals and empty eg (dz2 and dx2-y2) orbitals. The top of the valence bond is mainly contributed by O 2p orbital of the oxygen ligands mixed with the partially filled t2g orbitals of W 5d/Mo 4d, while the conduction band mainly consists of empty eg orbitals of W 5d/Mo 4d with a little contribution of O 2p orbitals. The dielectric function exhibits a slight anisotropic behavior and optical absorption peak for Cs2TeW3O12 and Cs2TeMo3O12 belonging to the strong electronic transition O 2p → W 5d/Mo 4d within the octahedral units. According to the estimated valence band and conduction band edges, Cs2TeW3O12 and Cs2TeMo3O12 can be applied as visible-light-responsive photocatalysts for the decomposition of organic pollutants and dye molecules. Also, Cs2TeMo3O12 can be used in water splitting for hydrogen generation but Cs2TeW3O12 requires further experimental studies to confirm its ability for water splitting.

  19. A highly pixelated CdZnTe detector based on \\textit{Topmetal-${II}^-$} sensor

    CERN Document Server

    Zou, Shuguang; Sun, Xiangming; Huang, Guangming; Pei, Hua; Wang, Zhen; Liu, Jun; Yang, Ping; Wang, Dong

    2016-01-01

    \\textit{Topmetal-${II}^-$} is a low noise CMOS pixel direct charge sensor with a pitch of 83$\\mu m$. CdZnTe is an excellent semiconductor material for radiation detection. The combination of CdZnTe and the sensor makes it possible to build a detector with high spatial resolution. In our experiments, an epoxy adhesive is used as the conductive medium to connect the sensor and CdZnTe. The diffusion coefficient and charge efficiency of electrons are measured at a low bias voltage of -2 Volts, and the image of a single alpha is clear with a reasonable spatial resolution. The detector of such structure has the potential to be applied in X-ray imaging systems with a further improvements of the sensor.

  20. Nuclear reactor pulse calibration using a CdZnTe electro-optic radiation detector

    Energy Technology Data Exchange (ETDEWEB)

    Nelson, Kyle A., E-mail: knelson1@ksu.edu [S.M.A.R.T. Laboratory, Mechanical and Nuclear Engineering, Kansas State University, Manhattan, KS 66506 (United States); Geuther, Jeffrey A. [TRIGA Mark II Nuclear Reactor, Mechanical and Nuclear Engineering, Kansas State University, Manhattan, KS 66506 (United States); Neihart, James L.; Riedel, Todd A. [S.M.A.R.T. Laboratory, Mechanical and Nuclear Engineering, Kansas State University, Manhattan, KS 66506 (United States); Rojeski, Ronald A. [Nanometrics, Inc., 1550 Buckeye Drive, Milpitas, CA 95035 (United States); Saddler, Jeffrey L. [TRIGA Mark II Nuclear Reactor, Mechanical and Nuclear Engineering, Kansas State University, Manhattan, KS 66506 (United States); Schmidt, Aaron J.; McGregor, Douglas S. [S.M.A.R.T. Laboratory, Mechanical and Nuclear Engineering, Kansas State University, Manhattan, KS 66506 (United States)

    2012-07-15

    A CdZnTe electro-optic radiation detector was used to calibrate nuclear reactor pulses. The standard configuration of the Pockels cell has collimated light passing through an optically transparent CdZnTe crystal located between crossed polarizers. The transmitted light was focused onto an IR sensitive photodiode. Calibrations of reactor pulses were performed using the CdZnTe Pockels cell by measuring the change in the photodiode current, repeated 10 times for each set of reactor pulses, set between 1.00 and 2.50 dollars in 0.50 increments of reactivity. - Highlights: Black-Right-Pointing-Pointer We demonstrated the first use of an electro-optic device to trace reactor pulses in real-time. Black-Right-Pointing-Pointer We examined the changes in photodiode current for different reactivity insertions. Black-Right-Pointing-Pointer Created a linear best fit line from the data set to predict peak pulse powers.

  1. In vivo biodistribution and behavior of CdTe/ZnS quantum dots.

    Science.gov (United States)

    Zhao, Yan; Zhang, Yue; Qin, Gaofeng; Cheng, Jinjun; Zeng, Wenhao; Liu, Shuchen; Kong, Hui; Wang, Xueqian; Wang, Qingguo; Qu, Huihua

    2017-01-01

    The unique features of quantum dots (QDs) make them desirable fluorescent tags for cell and developmental biology applications that require long-term, multitarget, and highly sensitive imaging. In this work, we imaged fluorescent cadmium telluride/zinc sulfide (CdTe/ZnS) QDs in organs, tissues, and cells, and analyzed the mechanism of their lymphatic uptake and cellular distribution. We observed that the fluorescent CdTe/ZnS QDs were internalized by lymph nodes in four cell lines from different tissue sources. We obtained the fluorescence intensity-QD concentrations curve by quantitative analysis. Our results demonstrate that cells containing QDs can complete mitosis normally and that distribution of QDs was uniform across cell types and involved the vesicular transport system, including the endoplasmic reticulum. This capacity for CdTe/ZnS QD targeting provides insights into the applicability and limitations of fluorescent QDs for imaging biological specimens.

  2. Laterally emitted surface second harmonic generation in a single ZnTe nanowire

    CERN Document Server

    Liu, Weiwei; Liu, Zhe; Shen, Guozhen; Lu, Peixiang

    2012-01-01

    We report a direct observation on the unique laterally emitted surface second harmonic generation (SHG) in a single ZnTe nanowire. The highly directional surface SHG signal that polarizes along the direction vertical to the nanowire growth axis, is significantly larger than the bulk SHG contribution, indicating a high efficiency of surface SHG. Two strong SHG peaks are observed on both sides of the nanowire surfaces in the far-field scanning images, which is further supported by FDTD simulations, demonstrating that the unique laterally emitted signal is ascribed to surface SHG in the ZnTe nanowire. The surface SHG in a single ZnTe nanowire with unique lateral emission and high conversion efficiency shows great potential applications in short-wavelength nanolasers, nonlinear microscopy and polarization dependent photonic integrating.

  3. Studies on interaction and illumination damage of CS-Fe{sub 3}O{sub 4}-ZnS:Mn to bovine serum albumin

    Energy Technology Data Exchange (ETDEWEB)

    Liu Li, E-mail: liuli520666@sohu.com; Xiao Ling, E-mail: xiaoling9119@yahoo.cn; Zhu Huayue, E-mail: zhuhuayue@126.com; Shi Xiaowen, E-mail: shixwwhu@163.com [Wuhan University, College of Resource and Environmental Science, Hubei Biomass-Resource Chemistry and EnvironmentalBiotechnology Key Laboratory (China)

    2013-01-15

    In this study, the interaction of chitosan (CS) coated CS-Fe{sub 3}O{sub 4}-ZnS:Mn magnetic-fluorescent nanoparticles (MFNPs) with bovine serum albumin (BSA) was studied by means of ultraviolet-visible and fluorescence spectra; evidences for the damage of BSA molecule in the presence of CS-Fe{sub 3}O{sub 4}-ZnS:Mn MFNPs under UV illumination were also obtained. The results show that the dominating fluorescence quenching mechanism of CS-Fe{sub 3}O{sub 4}-ZnS:Mn MFNPs with BSA belongs to static quenching. Fluorescence resonance energy transfer (FRET) occurred from BSA to CS-Fe{sub 3}O{sub 4}-ZnS:Mn MFNPs. The thermodynamic parameters indicated that electrostatic interaction play major roles in CS-Fe{sub 3}O{sub 4}-ZnS:Mn-BSA, while binding processes exist spontaneously. In addition, the damage of CS-Fe{sub 3}O{sub 4}-ZnS:Mn MFNPs to BSA molecule under UV illumination was studied under various experimental parameters. It was proved that: the damage of BSA is prone to happen in the presence of CS-Fe{sub 3}O{sub 4}-ZnS:Mn MFNPs under UV illumination, there is synergic effect of oxygen and UV illumination on the damage of BSA, and the fluorescence quenching of BSA by CS-Fe{sub 3}O{sub 4}-ZnS:Mn MFNPs under UV illumination is mainly a result of a photo-induced free radical procedure.

  4. Intersubband optical transition energy in a CdTe/Zn{sub 0.2}Cd{sub 0.8}Te/ZnTe core/shell/shell spherical quantum dot with Smorodinsky–Winternitz confinement potential

    Energy Technology Data Exchange (ETDEWEB)

    Christina lily Jasmine, P. [Dept. of Physics, N.M.S. Sermathai Vasan College for Women, Madurai 625 012 (India); John Peter, A., E-mail: a.john.peter@gmail.com [P.G. and Research Dept. of Physics, Government Arts College, Melur, 625 106 Madurai (India); Lee, Chang Woo [Department of Chemical Engineering, College of Engineering, Kyung Hee University, 1732 Deogyeong-daero, Gihung, Yongin, Gyeonggi 446-701 (Korea, Republic of)

    2015-05-01

    Highlights: • Optical properties of a hydrogenic donor impurity in CdTe/Zn{sub 0.2}Cd{sub 0.8}Te/ZnTe core/shell/shell dot are discussed. • Two parametrical potential of Smorodinsky–Winternitz are considered in this problem. • The dielectric mismatch is included in the Hamiltonian. • The position dependent effective mass is applied. • The intersubband optical absorption, oscillator strength and radiative life time are studied. - Abstract: Electronic and optical properties of a hydrogenic donor impurity in a CdTe/Zn{sub 0.2}Cd{sub 0.8}Te/ZnTe core/shell/shell quantum dot are discussed taking into consideration of geometrical confinement effect. The confining potentials on both the sides of the barrier are different and a two parametrical potential of Smorodinsky–Winternitz is considered in this problem. The dielectric mismatch is included in the Hamiltonian. The position dependent effective mass is applied. The electronic properties are studied using variational method and the optical properties are investigated using the density matrix approach. The intersubband optical absorption, the oscillator strength and the radiative life time between ground and the excited states are studied based on the wave functions and the confined energies with and without the impurity with various dot radii. The results show that the absorption wavelength in type-II core and shell semiconducting nanomaterials can be tuned over a wider range of wavelengths by altering their size and the composition.

  5. DESORPTION OF Te CAPPING LAYER FROM ZnTe (100: AUGER SPECTROSCOPY, LOW-ENERGY ELECTRON DIFFRACTION AND SCANNING TUNNELING MICROSCOPY

    Directory of Open Access Journals (Sweden)

    K. K. Sossoe

    2016-01-01

    Full Text Available The influence of the annealing temperature to desorb a protective Te capping layer of the zinc telluride (ZnTe (100 surface was investigated. The surface reconstruction of the ZnTe (100 upon the removal of a Te capping layer grown by the molecular beam epitaxy was characterized by different methods. Auger spectroscopy brought out the chemical composition of the surface before and after annealing; the Low-energy electron diffraction (LEED gave information about the crystallographic structure. The surface crystallographic configurations of tellurium Te (c (2x2 and Te (c (2x1 are confirmed by scanning tunneling microscopy (STM. Such a study reveals a phase transition from a rich-Te to a poor-Te surface as the annealing temperature increases. 

  6. Wide emission-tunable CdTeSe/ZnSe/ZnS core–shell quantum dots and their conjugation with E. coli O-157

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, Haifeng [State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100 (China); Zhou, Guangjun, E-mail: gjzhou@sdu.edu.cn [State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100 (China); Zhou, Juan [Center for Disease Control and Prevention of Jinan Military Command, Jinan 250014 (China); Xu, Dong; Zhang, Xingshuang; Kong, Peng; Yang, Zhongsen [State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100 (China)

    2015-05-15

    Highlights: • QDs with variety morphology were obtained via an injection controlled process. • 3-D PL spectra of core–shell QDs show different excitation wavelength dependence. • The PL intensity of QDs with ZnSe transition layer increases dramatically. • Core–shell QDs were processed into aqueous phase and conjugated with E. coli O-157. - Abstract: Wide emission-tunable and different morphological alloyed CdTeSe quantum dots (QDs), CdTeSe/ZnS and CdTeSe/ZnSe/ZnS core–shell QDs were successfully synthesized via an injection controlled process. The effect of injection procedure and reaction temperature were systematically discussed and the growth mechanism was proposed. Most efficient PL wavelength was correlated with reaction time and temperature. The 3-D PL spectra of spherical bare CdTeSe and core–shell QDs with different passivation showed different excitation wavelength dependency. The PL intensity of CdTeSe/ZnSe/ZnS core–shell QDs increased greatly in comparison with that of CdTeSe and CdTeSe/ZnSe QDs. ZnSe transition layer played an important role in improving the PL intensity by providing a smoothened interface and gradient band offsets. The core–shell QDs were transferred into aqueous phase and successfully conjugated with Escherichia coli O-157. The proposed phase-transfer and bio-labeling strategy may be applicable to various QDs with different compositions.

  7. Solution-processing of ultra-thin CdTe/ZnO nanocrystal solar cells

    Energy Technology Data Exchange (ETDEWEB)

    MacDonald, Brandon I. [CSIRO, Materials Science and Engineering, Bayview Ave, Clayton, Victoria, 3168 (Australia); School of Chemistry and Bio21 Institute, The University of Melbourne, Parkville, Victoria, 3010 (Australia); Gengenbach, Thomas R.; Watkins, Scott E. [CSIRO, Materials Science and Engineering, Bayview Ave, Clayton, Victoria, 3168 (Australia); Mulvaney, Paul [School of Chemistry and Bio21 Institute, The University of Melbourne, Parkville, Victoria, 3010 (Australia); Jasieniak, Jacek J., E-mail: Jacek.Jasieniak@csiro.au [CSIRO, Materials Science and Engineering, Bayview Ave, Clayton, Victoria, 3168 (Australia)

    2014-05-02

    We have carried out a detailed study into how modifications of the physical, chemical and optical properties of solution-processed, nanocrystalline CdTe layers influence the photovoltaic performance of sintered CdTe/ZnO nanocrystal solar cells. Such solar cells are fabricated through layer-by-layer assembly, which is enabled through an inter layer chemical and thermal treatment cycle. In this manner we are able to fabricate working solar cells with sintered CdTe layers as low as 90 nm, provided that grain size is precisely controlled. We show that the extent of grain growth achieved during the CdTe sintering process is strongly dependent on nanocrystal surface chemistry and chemical environment, with the removal of the organic capping ligands and the introduction of CdCl{sub 2} prior to annealing leading to greatly enhanced growth. Due to the air processing involved and the nanocrystalline nature of the CdTe, the overall performance of these solar cells is shown to be strongly dependent on both annealing temperature and time, with optimal results requiring a balance between crystal growth and degradation due to oxidation. Using this simple bi-layer device structure, optimized treatment conditions result in power conversion efficiencies of up to 7.7% and peak internal quantum efficiencies in excess of 95%. - Highlights: • We study the growth of nanocrystalline CdTe thin films from colloidal nanocrystals. • We examine the CdTe growth profiles as a function of surface chemistry. • We show that nanocrystalline CdTe is susceptible to oxidation under air annealing. • We show how this oxidation influences performance in CdTe/ZnO solar cells. • We demonstrate CdTe/ZnO solar cells with an efficiency of 7.7% fabricated in air.

  8. Growth of CdZnTe Crystals for Radiation Detector Applications by Directional Solidification

    Science.gov (United States)

    Su, Ching-Hua

    2014-01-01

    Advances in Cadmium Zinc Telluride (Cd(sub 1-x)Zn(sub x)Te) growth techniques are needed for the production of large-scale arrays of gamma and x-ray astronomy. The research objective is to develop crystal growth recipes and techniques to obtain large, high quality CdZnTe single crystal with reduced defects, such as charge trapping, twinning, and tellurium precipitates, which degrade the performance of CdZnTe and, at the same time, to increase the yield of usable material from the CdZnTe ingot. A low gravity material experiment, "Crystal Growth of Ternary Compound Semiconductors in Low Gravity Environment", will be performed in the Material Science Research Rack (MSRR) on International Space Station (ISS). One section of the flight experiment is the melt growth of CdZnTe ternary compounds. This talk will focus on the ground-based studies on the growth of Cd(sub 0.80)Zn(sub 0.20)Te crystals for radiation detector applications by directional solidification. In this investigation, we have improved the properties that are most critical for the detector applications (electrical properties and crystalline quality): a) Electrical resistivity: use high purity starting materials (with reproducible impurity levels) and controlled Cd over pressure during growth to reproducibly balance the impurity levels and Cd vacancy concentration b) Crystalline quality: use ultra-clean growth ampoule (no wetting after growth), optimized thermal profile and ampoule design, as well as a technique for supercool reduction to growth large single crystal with high crystalline quality

  9. Optical characterization of a-Se85−Te15Zn thin films

    Indian Academy of Sciences (India)

    S Shukla; S Kumar

    2012-02-01

    Thin films of Se85−Te15Zn ( = 0, 2, 4, 6 and 10) glassy alloys have been deposited onto a chemically cleaned glass substrate by thermal evaporation technique under vacuum. The analysis of transmission spectra, measured at normal incidence, in the spectral range of 400–2500 nm helped us in the optical characterization of thin films under study. From the analysis of transmission spectra, the optical parameters such as refractive index (), extinction coefficient (), absorption coefficient (), real and imaginary dielectric constants (' and ") have been calculated. It is observed that the parameters , , ', " and decrease with increase in wavelength () and increase with Zn content. Optical band gap ($E_g$) has also been calculated and found to decrease with Zn content in Se85−Te15Zn glassy system which could be correlated with increase in the density of defect states.

  10. Crystal growth and reflectivity studies of Zn1–MnTe crystals

    Indian Academy of Sciences (India)

    K Veera Brahmam; D Raja Reddy; B K Reddy

    2005-08-01

    Single crystals of Zn1–MnTe were prepared by vertical Bridgman crystal growth method for different concentrations of Mn. Chemical analysis and reflectivity studies were carried out for compositional and band structure properties. Microscopic variation in composition between starting and end compounds was observed from EDAX analysis. Linear dependence of fundamental absorption edge (0) as a function of Mn concentration () was expressed in terms of a straight line fit and a shift in 0 towards higher energy was observed in reflectivity spectra of Zn1–MnTe.

  11. Photo- and Thermo-Induced Changes in Optical Constants and Structure of Thin Films from GeSe2-GeTe-ZnTe System

    Science.gov (United States)

    Petkov, Kiril; Todorov, Rossen; Vassilev, Venceslav; Aljihmani, Lilia

    We examined the condition of preparation of thin films from GeSe2-GeTe-ZnTe system by thermal evaporation and changes in their optical properties after exposure to light and thermal annealing. The results for composition analysis of thin films showed absence of Zn independently of the composition of the bulk glass. By X-ray diffraction (XRD) analysis it was found that a reduction of ZnTe in ZnSe in bulk materials takes of place during the film deposition. A residual from ZnSe was observed in the boat after thin film deposition. Optical constants (refractive index, n and absorption coefficient, α) and thickness, d as well as the optical band gap, Eg, depending of the content of Te in ternary Ge-Se-Te system are determined from specrophotometric measurements in the spectral range 400-2500 nm applying the Swanepoel's envelope method and Tauc's procedure. With the increase of Te content in the layers the absorption edge is shifted to the longer wavelengths, refractive index increases while the optical band gap decreases from 2.02 eV for GeSe2 to 1.26 eV for Ge34Se42Te24. The values of the refractive index decrease after annealing of all composition and Eg increase, respectively. Thin films with composition of Ge27Se47Te9Zn17 and Ge28Se49Te10Zn13 were prepared by co-evaporation of (GeSe2)78(GeTe)22 and Zn from a boat and a crucible and their optical properties, surface morphology and structure were investigated. The existence of a correlation between the optical band gap and the copostion of thin films from the system studied was demonstrated.

  12. Electrical and photoresponse properties of vacuum deposited Si/Al:ZnSe and Bi:ZnTe/Al:ZnSe photodiodes

    Science.gov (United States)

    Rao, Gowrish K.

    2017-04-01

    The paper reports fabrication and characterization of Bi:ZnTe/Al:ZnSe and Si/Al:ZnSe thin film photodiodes. The characteristics of the devices were studied under dark and illuminated conditions. The normalized spectral response, speed of photoresponse and variation of photocurrent with power density were studied in detail. Many vital parameters, such as diode ideality factor, barrier height, the thickness of the depletion region, trap depth, rise and decay times of photocurrent, were determined. Conduction mechanism in the photodiodes is discussed with the help of widely accepted theoretical models.

  13. Progress in the Development of CdTe and CdZnTe Semiconductor Radiation Detectors for Astrophysical and Medical Applications

    Directory of Open Access Journals (Sweden)

    Anna Maria Mancini

    2009-05-01

    Full Text Available Over the last decade, cadmium telluride (CdTe and cadmium zinc telluride (CdZnTe wide band gap semiconductors have attracted increasing interest as X-ray and gamma ray detectors. Among the traditional high performance spectrometers based on silicon (Si and germanium (Ge, CdTe and CdZnTe detectors show high detection efficiency and good room temperature performance and are well suited for the development of compact and reliable detection systems. In this paper, we review the current status of research in the development of CdTe and CdZnTe detectors by a comprehensive survey on the material properties, the device characteristics, the different techniques for improving the overall detector performance and some major applications. Astrophysical and medical applications are discussed, pointing out the ongoing Italian research activities on the development of these detectors.

  14. Progress in the Development of CdTe and CdZnTe Semiconductor Radiation Detectors for Astrophysical and Medical Applications.

    Science.gov (United States)

    Sordo, Stefano Del; Abbene, Leonardo; Caroli, Ezio; Mancini, Anna Maria; Zappettini, Andrea; Ubertini, Pietro

    2009-01-01

    Over the last decade, cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) wide band gap semiconductors have attracted increasing interest as X-ray and gamma ray detectors. Among the traditional high performance spectrometers based on silicon (Si) and germanium (Ge), CdTe and CdZnTe detectors show high detection efficiency and good room temperature performance and are well suited for the development of compact and reliable detection systems. In this paper, we review the current status of research in the development of CdTe and CdZnTe detectors by a comprehensive survey on the material properties, the device characteristics, the different techniques for improving the overall detector performance and some major applications. Astrophysical and medical applications are discussed, pointing out the ongoing Italian research activities on the development of these detectors.

  15. Unprecedented Integral-Free Debye Temperature Formulas: Sample Applications to Heat Capacities of ZnSe and ZnTe

    Directory of Open Access Journals (Sweden)

    R. Pässler

    2017-01-01

    Full Text Available Detailed analytical and numerical analyses are performed for combinations of several complementary sets of measured heat capacities, for ZnSe and ZnTe, from the liquid-helium region up to 600 K. The isochoric (harmonic parts of heat capacities, CVh(T, are described within the frame of a properly devised four-oscillator hybrid model. Additional anharmonicity-related terms are included for comprehensive numerical fittings of the isobaric heat capacities, Cp(T. The contributions of Debye and non-Debye type due to the low-energy acoustical phonon sections are represented here for the first time by unprecedented, integral-free formulas. Indications for weak electronic contributions to the cryogenic heat capacities are found for both materials. A novel analytical framework has been constructed for high-accuracy evaluations of Debye function integrals via a couple of integral-free formulas, consisting of Debye’s conventional low-temperature series expansion in combination with an unprecedented high-temperature series representation for reciprocal values of the Debye function. The zero-temperature limits of Debye temperatures have been detected from published low-temperature Cp(T data sets to be significantly lower than previously estimated, namely, 270 (±3 K for ZnSe and 220 (±2 K for ZnTe. The high-temperature limits of the “true” (harmonic lattice Debye temperatures are found to be 317 K for ZnSe and 262 K for ZnTe.

  16. Characterization of CdZnTe after argon ion beam bombardment

    Energy Technology Data Exchange (ETDEWEB)

    Bensalah, H., E-mail: hakima.bensalah@uam.es [Departamento de Fisica de Materiales, Laboratorio de Crecimiento de Cristales, Facultad de Ciencias, Universidad Autonoma de Madrid, Cantoblanco, 28049 Madrid (Spain); Hortelano, V. [GdS-Optronlab Group, Departamento Fisica Materia Condensada, Universidad de Valladolid, Edificio I-D, Paseo de Belen 1, 47011 Valladolid (Spain); Plaza, J.L. [Departamento de Fisica de Materiales, Laboratorio de Crecimiento de Cristales, Facultad de Ciencias, Universidad Autonoma de Madrid, Cantoblanco, 28049 Madrid (Spain); Martinez, O. [GdS-Optronlab Group, Departamento Fisica Materia Condensada, Universidad de Valladolid, Edificio I-D, Paseo de Belen 1, 47011 Valladolid (Spain); Crocco, J.; Zheng, Q.; Carcelen, V.; Dieguez, E. [Departamento de Fisica de Materiales, Laboratorio de Crecimiento de Cristales, Facultad de Ciencias, Universidad Autonoma de Madrid, Cantoblanco, 28049 Madrid (Spain)

    2012-12-05

    Highlights: Black-Right-Pointing-Pointer After argon irradiation using low fluence, the defects on surface were removed. Black-Right-Pointing-Pointer The PL intensity increases after irradiation. This increase should be related to the improved quality of the CdZnTe surfaces. Black-Right-Pointing-Pointer Irradiation process lead to an elimination of Te precipitates from the surfaces of the CdZnTe samples. - Abstract: The objective of this work is to analyze the effects of argon ion irradiation process on the structure and distribution of Te inclusions in Cd{sub 1-x}Zn{sub x}Te crystals. The samples were treated with different ion fluences ranging from 2 to 8 Multiplication-Sign 10{sup 17} cm{sup -2}. The state of the samples before and after irradiation were studied by Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM), Cathodoluminescence, Photoluminescence, and micro-Raman spectroscopy. The effect of the irradiation on the surface of the samples was clearly observed by SEM or AFM. Even for small fluences a removal of polishing scratches on the sample surfaces was observed. Likely correlated to this effect, an important enhancement in the luminescence intensity of the irradiated samples was observed. An aggregation effect of the Te inclusions seems to occur due to the Ar bombardment, which are also eliminated from the surfaces for the highest ion fluences used.

  17. CdTe and CdZnTe detectors behavior in X-ray computed tomography conditions

    CERN Document Server

    Ricq, S; Garcin, M

    2000-01-01

    The application of CdTe and CdZnTe 2D array detectors for medical X-ray Computed Tomography (XCT) is investigated. Different metallic electrodes have been deposited on High-Pressure Bridgman Method CdZnTe and on Traveling Heater Method CdTe:Cl. These detectors are exposed to X-rays in the CT irradiation conditions and are characterized experimentally in current mode. Detectors performances such as sensitivity and response speed are studied. They are correlated with charge trapping and de-trapping. The trapped carrier space charges may influence the injection from the electrodes. This enables one to get information on the nature of the predominant levels involved. The performances achieved are encouraging: dynamic ranges higher than 4 decades and current decreases of 3 decades in 4 ms after X-ray beam cut-off are obtained. Nevertheless, these detectors are still limited by high trap densities responsible for the memory effect that makes them unsuitable for XCT.

  18. Electronic properties of traps induced by gamma-irradiation in CdTe and CdZnTe detectors

    CERN Document Server

    Cavallini, A; Chirco, P; Morigi, M P; Zanarini, M; Auricchio, N; Caroli, E; Dusi, W; Fougeres, P; Hage-Ali, M; Siffert, P

    2000-01-01

    The knowledge of a detector response to different types of radiation sources is becoming a key issue for its employment in many medical, space and scientific applications. Nevertheless, a clear understanding of the effects of irradiation on the material properties is still a long way ahead and, therefore, we have started a thorough investigation of room temperature CdTe and CdZnTe detectors exposed to gamma-ray irradiation. As-grown detectors have been exposed to increasing gamma-ray doses, up to the virtual death of the detector, which occurs at a dose of 30 kGy. The modifications in the detector performance have been investigated by dark-current measurements and quantitative spectroscopic analyses at low and medium energies. The deep levels present in the material have been identified by means of Photo-Induced Current Transient Spectroscopy (PICTS) analyses. The evolution of the trap parameters with increasing irradiation dose has been monitored and a comparison of the results obtained from CdTe and CdZnTe ...

  19. Comparison of CdTe and CdZnTe Detectors for Field Determination of Uranium Isotopic Enrichments

    Energy Technology Data Exchange (ETDEWEB)

    Hofstetter, KJ

    2004-01-23

    A performance comparison of a CdTe and a CdZnTe detector when exposed to uranium samples of various isotopic enrichments has been performed. These high-resolution detectors can assist in the rapid determination of uranium isotopic content of illicit material. Spectra were recorded from these room temperature semiconductor detectors with a portable multi-channel analyzer, both in the laboratory and in a field environment. Both detectors were operated below ambient temperature using the vendor supplied thermoelectric coolers. Both detectors had nominally the same active volume (18 mm3 for the CdZnTe and 25 mm3 for the CdTe detector) and resolution. Spectra of samples of known isotopic content were recorded at fixed geometries. An evaluation of potential signature g rays for the detection of enriched uranium was completed. Operational advantages and disadvantages of each detector are discussed. There is a need to improve the detection sensitivity during the interdiction of special nuclear materials (SNM) for increased homeland protection. It is essential to provide additional tools to first responders and law enforcement personnel for assessing nuclear and radiological threats.

  20. Synthesis, Structural and Optical Characterization of CdTeSe/ZnSe and CdTeSe/ZnTe Core/Shell Ternary Quantum Dots for Potential Application in Solar Cells

    Science.gov (United States)

    Hung, Le Xuan; Thang, Pham Nam; Van Nong, Hoang; Yen, Nguyen Hai; Chinh, Vu Đuc; Van Vu, Le; Hien, Nguyen Thi Thuc; de Marcillac, Willy Daney; Hong, Phan Ngoc; Loan, Nguyen Thu; Schwob, Catherine; Maître, Agnès; Liem, Nguyen Quang; Bénalloul, Paul; Coolen, Laurent; Nga, Pham Thu

    2016-08-01

    This work presents the results on the fabrication, structural and optical properties of CdTeSe/ZnTe and CdTeSe/ZnSe n monolayers (ML) (with n = 0,1,2,4 and 6 being the nominal shell monolayer thickness) ternary alloyed core/shell quantum dots (QDs). Transmission electron microscopy has been used to observe the shape and size of the QDs. These QDs crystallize at the zinc-blende phase. Raman scattering has been used to characterize the CdTeSe QDs' alloy composition in the fabrication and coating processes. The Raman spectrum of CdTeSe QDs, in the frequency range from 100 cm-1 to 300 cm-1, is a composite band with two peaks at 160 cm-1 and 192 cm-1. When the thickness of the ZnTe shell is 4 ML, the peak of the Raman spectrum only appears at 160 cm-1. For the ZnSe 4 ML shell, the peak only appears at ˜200 cm-1. This shows that the nature of the CdTeSe QDs is either CdTe-rich or CdSe-rich depending on the shell of each sample. The shell thickness of 2 ML does not change the ternary core QDs' crystalline phase. The absorption and photoluminescence spectra show that the absorption and emission bands can be shifted to 900 nm, depending on each ternary alloyed QD core/shell sample. This near-infrared spectrum region is suitable for applications in solar cells.

  1. Synthesis and Optical Properties of ZnO-TeO2 Glass System

    Directory of Open Access Journals (Sweden)

    H. A.A. Sidek

    2009-01-01

    Full Text Available Problem statement: Systematic series of ZnO-TeO2 glasses with mole fraction of 0.10-0.40 ZnO content with an interval of 0.05 were studied to obtain their physical and optical properties. Approach: All the glass samples were synthesized by rapid melting quenching method under controlled conditions, while their refractive indices (n were measured by the EL X-02C high precision ellipsometer. The room temperature absorption of all glass samples were determined using Camspec M350 double beam UV-visible spectrophotometer. The infrared (IR spectra of each glass samples were recorded with Thermo Nicolet Fourier Transform-Infrared (FT-IR spectrophotometer. Their physical properties were measured and the amorphous nature was confirmed by the x-ray diffraction technique. Results: The increase of refractive index of the TeO2-ZnO glasses with the addition of ZnO was best explained in terms of either electron density or polarizability of the ions. The absorption edge shift to higher energy (shorter wavelength with increasing ZnO content was observed in this glass. The optical band gap (Eopt of zinc tellurite glass decreases with increasing of ZnO content probably due to the increment of Non-Bridging Oxygen (NBO ion contents which eventually shifted the band edge to lower energies. Conclusion/Recommendation: The physical and optical properties of zinc tellurite glasses were found generally affected by the changes in the glass composition. FTIR spectra of zinc tellurite glass revealed broad, weak and strong absorption bands in the investigated range of wave numbers from 4000-400 cm-1 which associated with their corresponding bond modes of vibration and the glass structure. The addition of ZnO into TeO2 glass network shifted the major band from 626 cm-1 (for pure TeO2 glass to the band at around 669 cm-1.

  2. A comparative study on the sensitive detection of hydroxyl radical using thiol-capped CdTe and CdTe/ZnS quantum dots.

    Science.gov (United States)

    Adegoke, Oluwasesan; Nyokong, Tebello

    2012-11-01

    Four types of water-soluble luminescent quantum dots (QDs) whose surface was functionlaized with thioglycolic acid (TGA), 3-mercaptopropionic acid (MPA), or glutathione (GSH), were investigated for the sensitive and selective detection of hydroxyl radical (·OH) in aqueous media. It was found that the type of capping agent and QD influenced the sensitivity of the probe. The order of sensitivity of the probe was: GSH-CdTe@ZnS > MPA-CdTe@ZnS > TGA-CdTe > MPA-CdTe QDs. Under the optimum conditions, a limit of detection as low as 8.5 × 10(-8) M was obtained using GSH-CdTe@ZnS. The effects of foreign reactive oxygen species and the Fenton reactants and products as possible interferences on the proposed probe were negligible for CdTe@ZnS QDs. Besides, experimental results indicated that CdTe@ZnS QDs were more attractive for the selective recognition of ·OH than CdTe QDs. The mechanistic reaction pathway between the QDs and ·OH is proposed.

  3. Synthesis of CdSe/ZnS and CdTe/ZnS Quantum Dots: Refined Digestive Ripening

    Directory of Open Access Journals (Sweden)

    Sreeram Cingarapu

    2012-01-01

    Full Text Available We report synthesis of CdSe and CdTe quantum dots (QDs from the bulk CdSe and CdTe material by evaporation/co-condensation using the solvated metal atom dispersion (SMAD technique and refined digestive ripening. The outcomes of this new process are (1 the reduction of digestive ripening time by employing ligands (trioctylphosphine oxide (TOPO and oleylamine (OA as capping agent as well as digestive ripening solvent, (2 ability to tune the photoluminescence (PL from 410 nm to 670 nm, (3 demonstrate the ability of SMAD synthesis technique for other semiconductors (CdTe, (4 direct comparison of CdSe QDs growth with CdTe QDs growth based on digestive ripening times, and (5 enhanced PL quantum yield (QY of CdSe QDs and CdTe QDs upon covering with a ZnS shell. Further, the merit of this synthesis is the use of bulk CdSe and CdTe as the starting materials, which avoids usage of toxic organometallic compounds, eliminates the hot injection procedure, and size selective precipitation processes. It also allows the possibility of scale up. These QDs were characterized by UV-vis, photoluminescence (PL, transmission electron microscopy (TEM, high-resolution transmission electron microscopy (HRTEM, X-ray photoelectron spectroscopy (XPS, and powder XRD.

  4. Vapor Growth and Characterization of ZnSeTe Solid Solutions

    Science.gov (United States)

    Su, Ching-Hua; Sha, Yi-Gao; Volz, M. P.; Carpenter, P.; Lehoczky, S. L.

    2000-01-01

    Six ZnSe(1-x)Te(x) crystals were grown by the physical vapor transport technique. For each of the source material compositions, x = 0.10, 0.20 and 0.30, two crystals were grown - one under the horizontal and the other under the vertical stabilized configurations. The axial and radial compositional uniformity were measured by precision density measurements, wavelength dispersive X-ray spectroscopy (WDS) and optical transmission mappings. The measured radial ZnTe content was quite uniform for all the grown crystals except the horizontally grown crystal for x = 0.30. The WDS results on this crystal indicated a core with uniform ZnTe content, about 0.38, surrounded by a thin region of high ZnTe content with x = 0.8. This feature was confirmed by the SEM back scattering electron images. For the three source compositions the axial compositional variations for the vertically grown crystals were more uniform than that for the horizontally grown crystals. The measured compositions in the crystals grown from source composition of x = 0.10 suggest that the transport mechanism in the system can not be interpreted by a simple one-dimensional diffusion limited model.

  5. The analysis of X-ray response of CdZnTe detectors

    Institute of Scientific and Technical Information of China (English)

    ZHA GangQiang; XIANG Hang; LIU Ting; XU YaDong; WANG Tao; JIE WanQi

    2012-01-01

    CdZnTe is an excellent material candidate for high efficiency,high-resolution room-temperature nuclear radiation detectors,and the CdZnTe detectors are being widely used in medicine,industry,safeguard and scientific X-ray and γ-ray imaging and spectroscopic applications.In this work,three CdZnTe planar detectors with different grades,named CZT-1,CZT-2 and CZT-3,respectively,were fabricated.And the effects of mobility,lifetime and de-trapping time on the performance of CdZnTe planar detector,such as the energy rcsolution,charge collection efficiency and peak to valley ratio,were analyzed.The charge collection efficiency depends on the product of carrier mobility and lifetime,which has a great effect on the energy resolution of detector when the efficiency is less than 90%.The de-trapping time of carriers in deep levels should be responsible for the peak to valley ratio and "polarization".

  6. The development of drift-strip detectors based on CdZnTe

    DEFF Research Database (Denmark)

    Gostilo, V.; Budtz-Jørgensen, Carl; Kuvvetli, Irfan

    2002-01-01

    The design and technological development of a CdZnTe drift strip detector is described. The device is based on a monocrystal of dimensions 10 x 10 x 3 mm(3) and has a pitch of 200 mum and a strip width of 100 mum. The strip length is 9.5 mm. The distribution of the leakage currents of the strips...

  7. CdZnTe room-temperature semiconductor operation in liquid scintillator

    CERN Document Server

    Stewart, D Y

    2008-01-01

    We demonstrate the first operation of CdZnTe room-temperature detectors in a liquid scintillator environment. This work follows conceptually the Heusser-type detector method of operating HPGe detectors in liquid nitrogen and liquid argon but instead for a far more practical room-temperature ensemble with the aim of achieving ultra-low background levels for radiation detection.

  8. One-Pot Aqueous Phase Synthesis of CdTe and CdTe/ZnS Core/Shell Quantum Dots.

    Science.gov (United States)

    Zhou, Beiying; Yang, Fengjiu; Zhang, Xin; Cheng, Wenyan; Luo, Wei; Wang, Lianjun; Jiang, Wan

    2016-06-01

    A facile and economical one-pot strategy has been developed for the synthesis of water-solute CdTe and CdTe/ZnS core/shell quantum dots (QDs) using tellurium dioxide (TeO2) as a tellurium precursor and thioglycolic acid (TGA) as stabilizer without any pre-treatment and inert atmosphere protection. As-synthesized QDs were characterized by transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM), electron diffraction spectroscopy (EDS), X-ray powder diffraction (XRD), UV-vis and photoluminescence (PL). The spherical particles were uniformly distributed with the average diameters of 3.2 nm (CdTe QDs) and -5 nm (CdTe/ZnS QDs). By altering the reaction conditions, the emission wavelengths of the CdTe core QDs and CdTe/ZnS core/shell QDs could be tuned from 508 to 574 nm and 526 to 600 nm with narrow full widths at half maximum (FWHM) of 33 to 58 nm, respectively. Meanwhile, on the optimum condition, the luminescence efficiency of CdTe/ZnS QDs can achieve to 74%, which was higher than that of CdTe core QDs (24%).

  9. Structure and morphology in diffusion-driven growth of nanowires: the case of ZnTe.

    Science.gov (United States)

    Rueda-Fonseca, P; Bellet-Amalric, E; Vigliaturo, R; den Hertog, M; Genuist, Y; André, R; Robin, E; Artioli, A; Stepanov, P; Ferrand, D; Kheng, K; Tatarenko, S; Cibert, J

    2014-01-01

    Gold-catalyzed ZnTe nanowires were grown at low temperature by molecular beam epitaxy on a ZnTe(111) B buffer layer, under different II/VI flux ratios, including with CdTe insertions. High-resolution electron microscopy and energy-dispersive X-ray spectroscopy (EDX) gave information about the crystal structure, polarity, and growth mechanisms. We observe, under stoichiometric conditions, the simultaneous presence of zinc-blende and wurtzite nanowires spread homogeneously on the same sample. Wurtzite nanowires are cylinder-shaped with a pyramidal-structured base. Zinc-blende nanowires are cone-shaped with a crater at their base. Both nanowires and substrate show a Te-ended polarity. Te-rich conditions favor zinc-blende nanowires, while Zn-rich suppress nanowire growth. Using a diffusion-driven growth model, we present a criterion for the existence of a crater or a pyramid at the base of the nanowires. The difference in nanowire morphology indicates lateral growth only for zinc-blende nanowires. The role of the direct impinging flux on the nanowire's sidewall is discussed.

  10. Al-doped ZnO contact to CdZnTe for x- and gamma-ray detector applications

    Science.gov (United States)

    Roy, U. N.; Camarda, G. S.; Cui, Y.; Gul, R.; Hossain, A.; Yang, G.; Mundle, R. M.; Pradhan, A. K.; James, R. B.

    2016-06-01

    The poor adhesion of common metals to CdZnTe (CZT)/CdTe surfaces has been a long-standing challenge for radiation detector applications. In this present work, we explored the use of an alternative electrode, viz., Al-doped ZnO (AZO) as a replacement to common metallic contacts. ZnO offers several advantages over the latter, such as having a higher hardness, a close match of the coefficients of thermal expansion for CZT and ZnO, and better adhesion to the surface of CZT due to the contact layer being an oxide. The AZO/CZT contact was investigated via high spatial-resolution X-ray response mapping for a planar detector at the micron level. The durability of the device was investigated by acquiring I-V measurements over an 18-month period, and good long-term stability was observed. We have demonstrated that the AZO/CZT/AZO virtual-Frisch-grid device performs fairly well, with comparable or better characteristics than that for the same detector fabricated with gold contacts.

  11. Development of ZnTe:Cu Contacts for CdTe Solar Cells: Cooperative Research and Development Final Report, CRADA Number CRD-08-320

    Energy Technology Data Exchange (ETDEWEB)

    Dhere, R.

    2012-04-01

    The main focus of the work at NREL was on the development of Cu-doped ZnTe contacts to CdTe solar cells in the substrate configuration. The work performed under the CRADA utilized the substrate device structure used at NREL previously. All fabrication was performed at NREL. We worked on the development of Cu-doped ZnTe as well as variety of other contacts such as Sb-doped ZnTe, CuxTe, and MoSe2. We were able to optimize the contacts to improve device parameters. The improvement was obtained primarily through increasing the open-circuit voltage, to values as high as 760 mV, leading to device efficiencies of 7%.

  12. The Analysis of Structure and Morphology for Big Area CdTe/CdZnTe/Si Thin Film Grown by HWE Technique%HWE生长大面积CdTe/CdZnTe/Si薄膜的结构和形貌分析

    Institute of Scientific and Technical Information of China (English)

    杨爱明; 吴长树; 杨宇; 唐利斌

    2004-01-01

    用热壁外延法(HWE)生长直径30mm的CdTe/CdZnTe/Si薄膜,经XRD测试说明它是晶面为(111)取向的立方闪锌矿结构.SEM对Si衬底、CdZnTe缓冲层和CdTe薄膜三层分别测试,结果发现:Si衬底表面结构粗糙,CdZnTe缓冲层较Si衬底表面结构细致,CdTe薄膜较CdZnTe缓冲层表面结构光滑细密,即缺陷较CdZnTe缓冲层少很多.通过对该片子照像看出其表面如镜面.由此说明大面积CdTe/CdZnTe/Si薄膜可用HWE技术制备.

  13. Surface morphology study on CdZnTe crystals by atomic force microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Azoulay, M.; George, M.A.; Burger, A.; Collins, W.E.; Silberman, E. [Fisk Univ., Nashville, TN (United States)

    1993-03-01

    The study of the crystal surface morphology of CdZnTe is important for the understanding of the fundamentals of crystal growth in order to improve the crystal quality which is essential in applications such as substrates for epitaxy or performance of devices, i.e., room temperature nuclear spectrometers. We present a first atomic force microscopy study on CdZnTe. Cleaved (110) surfaces were imaged in the ambient and an atomic layer step structure was revealed. The effects of thermal annealing on the atomic steps together with Te precipitation along these steps are discussed in terms of deformation due to stress relief and the diffusion of tellurium precipitates. 12 refs., 3 figs.

  14. Use of a ZnTe:N/ZnO: A1 bilayer in thin-flim, multi-junction II-VI solar cells.

    Science.gov (United States)

    Rich, Geoffrey

    2002-03-01

    Development of a low-cost, thin-film tandem solar cell structure utilizing II-VI compound semiconductors is described. The structure consists of a CdS/CdTe top cell to which a bilayer of ZnTe:N/ZnO:Al is applied, subsequently bonded to a thin-film or crystalline bottom cell. The bilayer forms a back contact to the top cell, with an appropriate optical transmission and lateral conductivity characteristic for use in a four-terminal tandem device. Previous work at the University of Toledo has shown that ZnTe can be effectively doped by reactive sputtering in nitrogen, and demonstration of ZnTe:N as a component of a back contact to CdS/CdTe heterojunctions has been demonstrated [1]. The addition of a ZnO:Al layer provides the necessary lateral conductivity required by a four-terminal tandem solar cell design. Test structures consisting of Al/ZnTe:N/ZnO:Al/Al, deposited on glass by magnetron sputtering, are characterized optically and electrically. The ZnTe:N/ZnO:Al bilayer is applied to thin-film CdS/CdTe heterojunctions deposited by rapid, low-cost techniques (provided by First Solar, LLC). With the addition of a metallic grid, functioning top cell structures are created and measured. By bonding a bottom cell to this structure, a complete dual-junction, four-terminal device is constructed and demonstrated. [1] J. Drayton, A. Gupta, K. Makhratchev, K. Price, R. Bohn, and A. Compaan, Mat. Res. Soc. Symp. Proc. 668, “II-VI Compound Semiconductor Photovoltaic Materials,” ed. by R Noufi, R. W. Birkmire, D. Lincot, H. W. Schock.

  15. Spectral response of THM grown CdZnTe crystals

    DEFF Research Database (Denmark)

    Chen, H.; Awadalla, S.A.; Harris, F.

    2008-01-01

    The spectral response of several crystals grown by the Traveling Heater Method (THM) were investigated. An energy resolution of 0.98% for a Pseudo Frisch-Grid of 4 × 4 × 9 mm3 and 2.1% FWHM for a coplanar-grid of size 11 × 11 × 5 mm3 were measured using 137Cs-662 keV. In addition a 4% FWHM at 122...

  16. X-ray diffraction study of epitaxial heterostructures of II-VI CdTe and ZnTe semiconductors; Etude par diffraction de rayons X d`heterostructures epitaxiees a base des semi-conducteurs II-VI CdTe et ZnTe

    Energy Technology Data Exchange (ETDEWEB)

    Bouchet-Boudet, N.

    1996-10-07

    This work deals with the structural study of II-VI semiconductor (CdTe and ZnTe) heterostructures by X-ray diffraction and reflectivity. These heterostructures have a high lattice parameter misfit and are grown by Molecular Beam Epitaxy. Two main subjects are developed: the characterization of ZnTe wires, grown by step propagation on a CdTe (001) vicinal surface, and the study of the vertical correlations in Cd{sub 0.8}Zn{sub 0.2}Te / CdTe superlattices and superlattices made of ZnTe fractional layers spaced by CdTe. The growth of organised system is up to date; its aim is to realize quantum boxes (or wires) superlattices which are laterally and vertically ordered. The deformation along the growth axis induced by a ZnTe fractional layer inserted in a CdTe matrix is modelled, in the kinematical approximation, to reproduce the reflectivity measured around the substrate (004) Bragg peak. The lateral periodicity of the wires, deposited on a vicinal surface is a new and difficult subject. Some results are obtained on a vertical superlattice grown on a 1 deg. mis-cut surface. The in-plane and out-of-plane correlation lengths of a Cd{sub 0.8}Zn{sub 0.2}Te / CdTe superlattice are deduced from the diffused scattered intensity measured at grazing incidence. The calculations are made within the `distorted Wave Born Approximation`. The vertical correlation in ZnTe boxes (or wines) superlattices can be measured around Bragg peaks. It is twice bigger in a superlattice grown on a 2 deg. mis-cut substrate than a nominal one. (author). 74 refs.

  17. Study of a new architecture of gamma cameras with Cd/ZnTe/CdTe semiconductors; Etude d'une nouvelle architecture de gamma camera a base de semi-conducteurs CdZnTe /CdTe

    Energy Technology Data Exchange (ETDEWEB)

    Guerin, L

    2007-11-15

    This thesis studies new semi conductors for gammas cameras in order to improve the quality of image in nuclear medicine. The chapter 1 reminds the general principle of the imaging gamma, by describing the radiotracers, the channel of detection and the types of Anger gamma cameras acquisition. The physiological, physical and technological limits of the camera are then highlighted, to better identify the needs of future gamma cameras. The chapter 2 is dedicated to a bibliographical study. At first, semi-conductors used in imaging gamma are presented, and more particularly semi-conductors CDTE and CdZnTe, by distinguishing planar detectors and monolithic pixelated detectors. Secondly, the classic collimators of the gamma cameras, used in clinical routine for the most part of between them, are described. Their geometry is presented, as well as their characteristics, their advantages and their inconveniences. The chapter 3 is dedicated to a state of art of the simulation codes dedicated to the medical imaging and the methods of reconstruction in imaging gamma. These states of art allow to introduce the software of simulation and the methods of reconstruction used within the framework of this thesis. The chapter 4 presents the new architecture of gamma camera proposed during this work of thesis. It is structured in three parts. The first part justifies the use of semiconducting detectors CdZnTe, in particular the monolithic pixelated detectors, by bringing to light their advantages with regard to the detection modules based on scintillator. The second part presents gamma cameras to base of detectors CdZnTe (prototypes or commercial products) and their associated collimators, as well as the interest of an association of detectors CdZnTe in the classic collimators. Finally, the third part presents in detail the HiSens architecture. The chapter 5 describes both software of simulation used within the framework of this thesis to estimate the performances of the Hi

  18. Concerted Rattling in CsAg5 Te3 Leading to Ultralow Thermal Conductivity and High Thermoelectric Performance.

    Science.gov (United States)

    Lin, Hua; Tan, Gangjian; Shen, Jin-Ni; Hao, Shiqiang; Wu, Li-Ming; Calta, Nicholas; Malliakas, Christos; Wang, Si; Uher, Ctirad; Wolverton, Christopher; Kanatzidis, Mercouri G

    2016-09-12

    Thermoelectric (TE) materials convert heat energy directly into electricity, and introducing new materials with high conversion efficiency is a great challenge because of the rare combination of interdependent electrical and thermal transport properties required to be present in a single material. The TE efficiency is defined by the figure of merit ZT=(S(2) σ) T/κ, where S is the Seebeck coefficient, σ is the electrical conductivity, κ is the total thermal conductivity, and T is the absolute temperature. A new p-type thermoelectric material, CsAg5 Te3 , is presented that exhibits ultralow lattice thermal conductivity (ca. 0.18 Wm(-1)  K(-1) ) and a high figure of merit of about 1.5 at 727 K. The lattice thermal conductivity is the lowest among state-of-the-art thermoelectrics; it is attributed to a previously unrecognized phonon scattering mechanism that involves the concerted rattling of a group of Ag ions that strongly raises the Grüneisen parameters of the material.

  19. Electrical Characterization of Cu Composition Effects in CdS/CdTe Thin-Film Solar Cells with a ZnTe:Cu Back Contact: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Li, J. V.; Duenow, J. N.; Kuciauskas, D.; Kanevce, A.; Dhere, R. G.; Young, M. R.; Levi, D. H.

    2012-07-01

    We study the effects of Cu composition on the CdTe/ZnTe:Cu back contact and the bulk CdTe. For the back contact, its potential barrier decreases with Cu concentration while its saturation current density increases. For the bulk CdTe, the hole density increases with Cu concentration. We identify a Cu-related deep level at {approx}0.55 eV whose concentration is significant when the Cu concentration is high. The device performance, which initially increases with Cu concentration then decreases, reflects the interplay between the positive influences and negative influences (increasing deep levels in CdTe) of Cu.

  20. Time-resolved photoluminescence of type-II quantum dots and isoelectronic centers in Zn-Se-Te superlattice structures

    Science.gov (United States)

    Cheung, M. C.-K.; Cartwright, A. N.; Sellers, I. R.; McCombe, B. D.; Kuskovsky, I. L.

    2008-01-01

    Spectrally and time-resolved photoluminescence of a ZnTe /ZnSe superlattice reveals a smooth transition of the photoluminescence (PL) lifetime from ˜100ns at 2.35eV to less than a few nanoseconds at 2.8eV. The significant increase of the lifetime in the low energy region is strong evidence to support the formation of type-II quantum dots (QDs), since in these nanostructures the spatial separation of carriers is increased. The shorter lived emission above 2.5eV is attributed to excitons bound to Te isoelectronic centers in the ZnSe matrix. The smooth transition of the PL lifetime confirms that clusters of these Te atoms evolve into type-II ZnTe /ZnSe QDs.

  1. Effect of in situ annealing on structure and optical properties of ZnTe nanoparticles produced by pulsed laser ablation

    Science.gov (United States)

    Orii, Takaaki; Hirasawa, Makoto; Seto, Takafumi

    2007-04-01

    An improvement in morphology, crystallinity, and optical property of ZnTe nanoparticles produced by pulsed laser ablation (PLA) was achieved by in situ annealing. ZnTe nanoparticles produced in argon gas ambience by PLA were annealed in the gas flow at a temperatures Ta ranging from 300 °C to 800 °C and size-selected by a differential mobility analyzer. The bimodal size distribution of the ZnTe nanoparticles changed to unimodal at Ta = 600 °C. In this condition, the shape of the monodispersed ZnTe nanoparticles, classified into around 20 nm, became uniformly spherical and their crystallinity estimated by x-ray diffraction was extremely improved. These improvements by the in situ annealing were examined for ZnTe nanoparticles produced from off-stoichiometric target. Although the optical property of ZnTe nanoparticles produced from a zinc rich target was improved, those produced from a tellurium rich target could not be improved. It was found that the effect of in situ annealing on optical properties of ZnTe nanoparticles was dependent upon its content.

  2. Effect of in situ annealing on structure and optical properties of ZnTe nanoparticles produced by pulsed laser ablation

    Energy Technology Data Exchange (ETDEWEB)

    Orii, Takaaki [Research Consortium for Synthetic Nano-Function Materials Project (SYNAF), National Institute of Advanced Industrial Science and Technology (AIST), Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki, 305-8568 (Japan); Hirasawa, Makoto [Research Consortium for Synthetic Nano-Function Materials Project (SYNAF), National Institute of Advanced Industrial Science and Technology (AIST), Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki, 305-8568 (Japan); Seto, Takafumi [Research Consortium for Synthetic Nano-Function Materials Project (SYNAF), National Institute of Advanced Industrial Science and Technology (AIST), Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki, 305-8568 (Japan)

    2007-04-15

    An improvement in morphology, crystallinity, and optical property of ZnTe nanoparticles produced by pulsed laser ablation (PLA) was achieved by in situ annealing. ZnTe nanoparticles produced in argon gas ambience by PLA were annealed in the gas flow at a temperatures T{sub a} ranging from 300 deg. C to 800 deg. C and size-selected by a differential mobility analyzer. The bimodal size distribution of the ZnTe nanoparticles changed to unimodal at T{sub a} = 600 deg. C. In this condition, the shape of the monodispersed ZnTe nanoparticles, classified into around 20 nm, became uniformly spherical and their crystallinity estimated by x-ray diffraction was extremely improved. These improvements by the in situ annealing were examined for ZnTe nanoparticles produced from off-stoichiometric target. Although the optical property of ZnTe nanoparticles produced from a zinc rich target was improved, those produced from a tellurium rich target could not be improved. It was found that the effect of in situ annealing on optical properties of ZnTe nanoparticles was dependent upon its content.

  3. The structural, optical, and electrical properties of vacuum evaporated Cu-doped ZnTe polycrystalline thin films

    Science.gov (United States)

    Feng, L.; Mao, D.; Tang, J.; Collins, R. T.; Trefny, J. U.

    1996-09-01

    We have studied the structural, optical, and electrical properties of thermally evaporated, Cu-doped, ZnTe thin films as a function of Cu concentration and post-deposition annealing temperature. X-ray diffraction measurements showed that the ZnTe films evaporated on room temperature substrates were characterized by an average grain size of 300Å with a (111) preferred orientation. Optical absorption measurements yielded a bandgap of 2.21 eV for undoped ZnTe. A bandgap shrinkage was observed for the Cu-doped films. The dark resistivity of the as-deposited ZnTe decreased by more than three orders of magnitude as the Cu concentration was increased from 4 to 8 at.% and decreased to less than 1 ohm-cm after annealing at 260°C. For films doped with 6 7 at.% Cu, an increase of resistivity was also observed during annealing at 150 200°C. The activation energy of the dark conductivity was measured as a function of Cu concentration and annealing temperature. Hall measurements yielded hole mobility values in the range between 0.1 and 1 cm2/V·s for both as-deposited and annealed films. Solar cells with a CdS/CdTe/ZnTe/metal structure were fabricated using Cudoped ZnTe as a back contact layer on electrodeposited CdTe. Fill factors approaching 0.75 and energy conversion efficiencies as high as 12.1% were obtained.

  4. Low-Cost Lattice Matching Zn(Se)Te/Si Composite Substrates for HgCdSe and Type-2 Superlattices

    Science.gov (United States)

    2013-09-01

    which thin ZnTe grown on Si is used as a buffer layer to bridge the lattice 2 parameter gap between Si and CdTe , we believe that high quality...ZnSeTe. To date, the only research on ZnTe growth on Si has been related to the nucleation thin ZnTe buffer layer used for growing high quality CdTe ...Considering light passing through a thin film , the thickness (t) of the thin film can be expressed as a function of the interference fringe separation (Δ

  5. CdTe/ZnTe Quantum Dots - Growth and Optical Properties

    Science.gov (United States)

    2002-06-03

    either of the QD Parameters of the samples studied in this paper: substrate temperature, time of healing, nominal CdTe thickness and the number of... CdTe thickness of 2 ML one can easily distinguish both in Fig. la. QW- and QD-related emissions, while for the sample Both these effects are most...probably responsible for with the nominal CdTe thickness of 4 ML the QW the observed broadening of the PL line in the investi- emission is no longer

  6. Synthesis and structures of type-I clathrates: Rb6Na2Ge44.89(1), Cs6Na2Zn4Ge42 and Cs6.40(1)Na1.60(1)Ga8Ge38

    Science.gov (United States)

    Zhang, Hui; Mu, Gang; Huang, Fuqiang; Xie, Xiaoming

    2016-10-01

    Type-I clathrates of Rb6Na2Ge44.89(1), Cs6Na2Zn4Ge42 and Cs6.40(1)Na1.60(1)Ga8Ge38 were synthesized via solid-state reaction. Rb6Na2Ge44.89(1), Cs6Na2Zn4Ge42 and Cs6.40(1)Na1.60(1)Ga8Ge38 were found to crystalize in the cubic space group of Pm 3 ̅ n with lattice parameters of a=10.72755(5) Å, a=10.79501(8) Å and a=10.79726(5) Å, respectively. Theoretical calculations indicated semiconducting features for the calculation models of Rb6Na2Ge44, Cs6Na2Zn4Ge42 and Cs6Na2Ga8Ge38 with band gaps of 0.002 eV, 0.297 eV and 0.221 eV, respectively.

  7. CdTe,核-壳型CdTe/CdS及CdTe/ZnS量子点的合成及表征%CdTe, Core-shell CdTe/CdS and CdTe/ZnS Quantum Dots: Their Synthesis and Characterization*

    Institute of Scientific and Technical Information of China (English)

    张纪梅; 许世超; 宋秀云; 代昭; 孙波; 姚翠翠

    2009-01-01

    Semiconductor CdTe, core-shell CdTe/CdS and CdTe/ZnS nanocrystals(quantum dots; QDs) were prepared in aqueous phase. Investigations of the prepared nanocrystals were performed via scanning tunneling microscope(STM) and fluorescence spectrum(FS), and quantum yields(Qys) was calculated based on the resulting data from FS. Particle size of well dispersed CdTe was evaluated to be ca 3 nm via STM. Some reaction conditions were investigated and discussed to enhance Qys of CdTe/CdS core-shell QDs, such as dependence of Cd2+ concentration, and effect of Cd2+∶S2- etc. Among all of those methods, Qys of core-shell CdTe/CdS is generally degressive with refluxing time elapsing. The best Qys of ca 80.0% can be achieved when pH was set at 8.5, Cd2+∶S2-=10:1(mol ratio). Moreover, CdTe/ZnS core-shell QDs was prepared, and results indicated a red-shift from 551 nm to 635 nm comparing with CdTe core, which suggested the growth of QDs size, however, Qys of CdTe/ZnS decreased to 14.4%. QDs currently discussed in this research are easily synthesized, and they will be useful in applications of biolabeling, imaging, and biosensing based on fluorescence resonance energy transfer(FRET).%在水相中制备了半导体CdTe纳米晶,核-壳型CdTe/CdS和CdTe/ZnS纳米晶(即量子点;QDs).利用扫描隧道显微镜(STM)和荧光光谱(FS)对合成的纳米晶量子点进行了研究,并且根据FS的数据进行了量子效率的计算.STM的结果表明合成的量子点直径约为3 nm并且分布良好.为了提高量子效率,对Cd2+浓度和Cd2+∶S2-比例等反应条件进行了研究,结果表明随着回流时间的增加,核-壳型量子点CdTe/CdS的量子效率总体上呈下降趋势.CdTe/CdS在pH8.5,Cd2+∶S2-=10∶1(摩尔比)时可获得80.0%的最大量子效率.同时制备了核-壳型量子点CdTe/ZnS,其最大发射波长由551 nm(CdTe)红移到635 nm(CdTe/ZnS)表明量子点的尺寸在增长,但是量子效率下降到14.4%. 当前研究的量子点可适用于生

  8. Study of Morphological Defects on Dual-Band HgCdTe on CdZnTe

    Science.gov (United States)

    Reddy, M.; Radford, W. A.; Lofgreen, D. D.; Olsson, K. R.; Peterson, J. M.; Johnson, S. M.

    2014-08-01

    HgCdTe dual-band epitaxial layers on lattice-matched CdZnTe substrates often have morphological defects. These defects, unlike normal void and microvoid defects, do not contain a polycrystalline core and, therefore, do not offer a good contrast for observation using optical and electron microscopes. This paper reports a way of identifying these defects by using a Nomarski optical microscopy image overlay on focused ion beam microscopy images for preparation of thin cross-sectional foils of these defects. Transmission electron microscopy was used to study the defect cross-sections to identify the origin and evolution of the morphological defects and their effect on the epitaxial layer. This paper reports cross-sectional analysis of four morphological defects of different shape and size.

  9. CdTe and CdZnTe gamma ray detectors for medical and industrial imaging systems

    CERN Document Server

    Eisen, Y; Mardor, I

    1999-01-01

    CdTe and CdZnTe X-ray and gamma ray detectors in the form of single elements or as segmented monolithic detectors have been shown to be useful in medical and industrial imaging systems. These detectors possess inherently better energy resolution than scintillators coupled to either photodiodes or photomultipliers, and together with application specific integrated circuits they lead to compact imaging systems of enhanced spatial resolution and better contrast resolution. Photopeak efficiencies of these detectors is greatly affected by a relatively low hole mobility-lifetime product. Utilizing these detectors as highly efficient good spectrometers, demands use of techniques to improve their charge collection properties, i.e., correct for variations in charge losses at different depths of interaction in the detector. The corrections for the large hole trapping are made either by applying electronic techniques or by fabricating detector or electrical contacts configurations which differ from the commonly used pla...

  10. A multi-technique characterization of electroless gold contacts on single crystal CdZnTe radiation detectors

    OpenAIRE

    Bell, S J; BAKER, M.A.; Chen, H.; Marthandam, P; V. Perumal; A. Schneider; Seller, P.; Sellin, P J; Veale, M C; Wilson, M. D.

    2013-01-01

    Cadmium zinc telluride (CdZnTe) is now established as a popular choice of sensor for the detection of γ-rays and hard x-rays, leading to its adoption in security, medical and scientific applications. There are still many technical challenges involving the deposition of high-quality, uniform metal contacts on CdZnTe. A detailed understanding of the interface between the bulk CdZnTe and the metal contacts is required for improvements to be made. To understand these complex interfaces, a range o...

  11. Recent advances in Tl Br, Cd Te and CdZnTe semiconductor radiation detectors: a review

    Energy Technology Data Exchange (ETDEWEB)

    Oliveira, Icimone B. [Universidade Bandeirante (UNIBAN), Sao Paulo, SP (Brazil)

    2011-07-01

    The success in the development of radiation spectrometers operating at room temperature is based on many years of effort on the part of large numbers of workers around the world. These individuals have contributed to the understanding of the fundamental materials issues associated with the growth of semiconductors for this application, the development of device fabrication and processing technology, and advances in low noise electronics and pulse processing. Progress in this field continues at an accelerated pace, as in evidenced by the improvements in detector performance and by the growing number of commercial products. Thus, the last years have been seen continued effort in the development of room temperature compound semiconductors devices. High-Z compound semiconductor detectors has been explored for high energy resolution, high detection efficiency and are of low cost. Compound semiconductors detectors are well suited for addressing needs of demanding applications such as bore hole logging where high operating temperature are encountered. In this work recent developments in semiconductors detectors were reviewed. This review concentrated on thallium bromide (TlBr), cadmium zinc telluride (CdZnTe) and cadmium telluride (CdTe) crystals detectors. TlBr has higher stopping power compared to common semiconductor materials because it has the higher photoelectric and total attenuation coefficients over wide energy range from 100 keV to 1 MeV. CdTe and CdZnTe detectors have several attractive features for detecting X-ray and low energy gamma ray. Their relatively large band gaps lead to a relatively low leakage current and offer an excellent energy resolution at room temperature. A literature survey and bibliography was also included. (author)

  12. Band gap energy in Zn-rich Zn{sub 1-x} Cd{sub x} Te thin films grown by r.f. sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Becerril, M.; Silva L, H.; Zelaya A, O. [Depto. de Fisica, CINVESTAV, A.P. 14-740, 07360 Mexico D.F. (Mexico)

    2004-07-01

    Ternary Zn{sub 1-x} Cd{sub x} Te semiconducting thin films were grown on 7059 Corning glass substrates at room temperature by co-sputtering from a Zn Te-Cd target. The visible Cd-area onto Zn Te target was varied to cover 0% - 4% of the total area. The optical and structural properties of the films were analysed as a function of the Cd concentration (x) on the layers. The sharp diffraction lines indicate mainly the Zn Te in cubic phase. When the cadmium was incorporated into the Zn Te lattice, the band gap energy (E{sub g}) decreased from 2.2748 eV (x = 0) to 2.2226 eV (x = 0.081). We found a linear relationship between E{sub g} and (x) in the interval of (x) studied, that predicts a value of the bowing parameter b in the E{sub g} (x) = E{sub g0} + ax + bx{sup 2} relationship, which coincides with the value of b calculated by making the same study for Cd-rich Cd Zn Te. This result becomes interesting given the large number of values reported for b and a for E{sub g} (x) of this ternary material. (Author) 17 refs., 1 tab., 6 figs.

  13. Band offsets for mismatched interfaces: The special case of ZnO on CdTe (001)

    Energy Technology Data Exchange (ETDEWEB)

    Jaffe, John E.; Kaspar, Tiffany C.; Droubay, Timothy C. [Fundamental and Computational Sciences Directorate, Pacific Northwest National Laboratory, P.O. Box 999, Richland, Washington 99352 (United States); Varga, Tamas [Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory, P.O. Box 999, Richland, Washington 99352 (United States)

    2013-11-15

    High-quality planar interfaces between ZnO and CdTe would be useful in optoelectronic applications. Although CdTe is zinc blende with cubic lattice constant a = 6.482 Å while ZnO is hexagonal wurtzite with a = 3.253 Å and c = 5.213 Å, (001)-oriented cubic zinc blende ZnO films could be stabilized epitaxially on a CdTe (001) surface in an √2 × √2 R45° configuration with a lattice mismatch of <0.5%. Modeling such a configuration allows density-functional total-energy electronic-structure calculations to be performed on several interface arrangements (varying terminations and in-plane fractional translations) to identify the most likely form of the interface, and to predict valence-band offsets between CdTe and ZnO in each case. Growth of ZnO on Te-terminated CdTe(001) is predicted to produce small or even negative (CdTe below ZnO) valence band offsets, resulting in a Type I band alignment. Growth on Cd-terminated CdTe is predicted to produce large positive offsets for a Type II alignment as needed, for example, in solar cells. To corroborate some of these predictions, thin layers of ZnO were deposited on CdTe(001) by pulsed laser deposition, and the band alignments of the resulting heterojunctions were determined from x-ray photoelectron spectroscopy measurements. Although zinc blende ZnO could not be confirmed, the measured valence band offset (2.0–2.2 eV) matched well with the predicted value.

  14. Boron-doped MnTe semiconductor-sensitized ZnO solar cells

    Indian Academy of Sciences (India)

    Auttasit Tubtimtae; Suwanna Sheangliw; Kritsada Hongsith; Supab Choopun

    2014-10-01

    We studied the photovoltaic performance of boron-doped MnTe semiconductor-sensitized solar cells (B-doped MnTe SSCs). The B-doped MnTe semiconductor was grown on ZnO using two stages of the successive ionic layer adsorption and reaction (SILAR) technique. The two phases of B-doped semiconductor nanoparticles (NPs), i.e. MnTe and MnTe2 were observed with a diameter range of approximately 15–30 nm. The result of the energy conversion efficiency of the sample with boron doping was superior compared to that of an undoped sample, due to the substantial change in the short-circuit current density and the open-circuit voltage. In addition, plots of ( ℎ )2 vs ℎ with band gaps of 1.30 and 1.27 eV were determined for the undoped and B-doped MnTe NPs, respectively. It can be noted that the boron doping effects with the change in the band gap and lead to an improvement in the crystalline quality and also intimate contact between the larger sizes of MnTe NPs. Hence, a noticeably improved photovoltaic performance resulted. However, this kind of semiconductor sensitizer can be further extended by experiments on yielding a higher power conversion efficiency and greater stability of the device.

  15. Optimization of control parameters of CdZnTe ACRT-Bridgman single crystal growth

    Institute of Scientific and Technical Information of China (English)

    2004-01-01

    [1]Kennedey, J. J., Amirtharaj, P. M., Boyd, P. R. Et al., Growth and characterization of Cd1-xZnxTe and Hg1-yZnyTe, J. Cryst. Growth, 1988, 86: 93-99.[2]Tanaka, A., Masa, Y., Seto, S. et al., Zinc and selenium co-doped CdTe substrates lattice matched to HgCdTe, J. Cryst. Growth, 1989, 94: 166-170.[3]Sen, S., Stanard, J. E., Developments in the bulk growth of Cd1-xZnxTe for substrates, Prog. Crystal Growth and Charact., 1994, 29: 253-273.[4]Azoulay, M., Rotter, S., Gafni, G. et al., Zinc segregation in CdZnTe grown under Cd/Zn partial pressure control, J. Cryst. Growth, 1992, 117: 276-280.[5]Lee, T. S., Lee, S. B., Kim, J. M. et al., Vertical Bridgman techniques to homogenize zinc composition of CdZnTe substrates, J. Electronic Materials, 1995, 24: 1057-1059.[6]Mühlberg, M., Rudolph, P., Genzel, C. Et al., Crystalline and chemical quality of CdTe and Cd1-xZnxTe grown by the Bridgman method in low temperature gradients, J. Cryst. Growth, 1990, 101: 275-280.[7]Cheuvart, P., El-Hanani, U., Schneider, D. et al., CdTe and CdZnTe crystal growth by horizontal Bridgman technique, J. Cryst. Growth, 1990, 101: 270-274.[8]Lu, Y. C., Shiau, J. J., Fiegelson, R. S. et al., Effect of vibrational stirring on the quality of Bridgman-grown CdTe, J. Cryst. Growth, 1990, 102: 807-813.[9]Butler, J. F., Doty, F. P., Apotovsky, B. Et al., γ-ray and X-ray detectors manufactured from Cd1-xZnxTe grown by a high-pressure Bridgman method, Mater. Sci. & Eng. B, 1993, 16: 291-295.[10]Capper, P., The role of accelerated crucible rotation in the growth of Hg1-xCdxTe and CdTe/CdZnTe, Prog. Crystal Growth and Charact., 1994, 28: 1-55.[11]Schulz-Dubois, E. O., Accelerated crucible rotation: hydrodynamics and stirring effect, J. Cryst. Growth, 1971, 12: 81-87.[12]Capper, P., Gosney, J. J. G., Jones, C. L. et al., Fluid flows in tall narrow containers by ACRT, Journal of Electronic Materials, 1986 15(6): 361-370.[13]Distanov, V. E., Kirdyashkin, A

  16. Electrical characterization of vacuum-deposited p-CdTe/n-ZnSe heterojunctions

    Science.gov (United States)

    Acharya, Shashidhara; Bangera, Kasturi V.; Shivakumar, G. K.

    2015-11-01

    In this paper, we report a heterojunction of p-CdTe/n-ZnSe fabricated on a quartz substrate using thermal evaporation technique. The materials have a larger band gap difference in comparison to other II-VI heterojunctions-involving CdTe. The larger band gap difference is expected to increase diffusion potential and photovoltaic conversion efficiency. The electrical conduction mechanism involved, barrier height and band offset at the interface that are crucial to determine device performance are evaluated using electrical characterization of heterojunction. The junction exhibited excellent rectification behavior with an estimated barrier height of 0.9 eV.

  17. Novel ZnO:Al contacts to CdZnTe for X- and gamma-ray detectors.

    Science.gov (United States)

    Roy, U N; Mundle, R M; Camarda, G S; Cui, Y; Gul, R; Hossain, A; Yang, G; Pradhan, A K; James, R B

    2016-05-24

    CdZnTe (CZT) has made a significant impact as a material for room-temperature nuclear-radiation detectors due to its potential impact in applications related to nonproliferation, homeland security, medical imaging, and gamma-ray telescopes. In all such applications, common metals, such as gold, platinum and indium, have been used as electrodes for fabricating the detectors. Because of the large mismatch in the thermal-expansion coefficient between the metal contacts and CZT, the contacts can undergo stress and mechanical degradation, which is the main cause for device instability over the long term. Here, we report for the first time on our use of Al-doped ZnO as the preferred electrode for such detectors. The material was selected because of its better contact properties compared to those of the metals commonly used today. Comparisons were conducted for the detector properties using different contacts, and improvements in the performances of ZnO:Al-coated detectors are described in this paper. These studies show that Al:ZnO contacts to CZT radiation detectors offer the potential of becoming a transformative replacement for the common metallic contacts due to the dramatic improvements in the performance of detectors and improved long-term stability.

  18. Pulsed THz radiation due to phonon-polariton effect in [110] ZnTe crystal

    CERN Document Server

    Tu, Chien-Ming; Chu, Wei-Chen; Luo, Chih-Wei; Chen, Jeng-Chung; Chi, Cheng-Chung

    2012-01-01

    Pulsed terahertz (THz) radiation, generated through optical rectification (OR) by exciting [110] ZnTe crystal with ultrafast optical pulses, typically consists of only a few cycles of electromagnetic field oscillations with a duration about a couple of picoseconds. However, it is possible, under appropriate conditions, to generate a long damped oscillation tail (LDOT) following the main cycles. The LDOT can last tens of picoseconds and its Fourier transform shows a higher and narrower frequency peak than that of the main pulse. We have demonstrated that the generation of the LDOT depends on both the duration of the optical pulse and its central wavelength. Furthermore, we have also performed theoretical calculations based upon the OR effect coupled with the phonon-polariton mode of ZnTe and obtained theoretical THz waveforms in good agreement with our experimental observation.

  19. A test device for isotopic γ-ray imaging with CdZnTe detector

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    A test device for isotopic γ-ray imaging, which consists of an isotope γ-ray source, a CdZnTe γ-ray spectrometer and other auxiliary equipment, is studied here. Compared with the conventional X-ray, the isotope γ-ray,which is utilized in this project, has its own advantages in imaging. Furthermore, with a room-temperature high-energy-resolution CdZnTe detector and a modern imaging processing technique, this device is capable of effectively suppressing the background and gaining more information, thus it can obtain a better image than conventional X-ray devices. In the experiment of PCB imaging, all soldered points and chip components are sharply demonstrated.

  20. The Effect of Twin Boundaries on the Spectroscopic Performance of CdZnTe Detectors

    Science.gov (United States)

    Parker, Bradford H.; Stahle, C. M.; Roth, D.; Babu, S.; Tueller, Jack; Powers, Edward I. (Technical Monitor)

    2001-01-01

    Most single grains in cadmium zinc telluride (CdZnTe) grown by the high-pressure Bridgman (HPB) technique contain multiple twin boundaries. As a consequence, twin boundaries are one of the most common macroscopic material defects found in large area (400 to 700 sq mm) CdZnTe specimens obtained from HPB ingots. Due to the prevalence of twin boundaries, understanding their effect on detector performance is key to the material selection process. Twin boundaries in several 2 mm thick large area specimens were first, documented using infrared transmission imaging. These specimens were then fabricated into either 2 mm pixel or planar detectors in order to examine the effect of the twin boundaries on detector performance. Preliminary results show that twin boundaries, which are decorated with tellurium inclusions, produce a reduction in detector efficiency and a degradation in resolution. The extent of the degradation appears to be a function of the density of tellurium inclusions.

  1. Crystal Growth of HgZnTe Alloy by Directional Solidification in Low Gravity Environment

    Science.gov (United States)

    Su, Ching-Hua; Sha, Yi-Gao; Lehoczky, S. L.; Szofran, F. R.; Gillies, D. C.; Scripa, R. N.; Cobb, S. D.; Wang, J. C.

    2002-01-01

    An Hg(0.84)Zn(0.16)Te alloy crystal was back-melted and partially re-solidified during the first United States Microgravity Laboratory mission in the Marshall Space Flight Center's Crystal Growth Furnace. The experiment was inadvertently terminated at about 30% of planned completion. Nonetheless, it was successfully demonstrated that a HgZnTe alloy ingot partially grown and quenched on the ground can be back-melted and re-grown in space under nearly steady-state growth conditions. An identical "ground-truth" experiment was performed following the mission and a comparison between the properties of the crystals is described. The results indicate the importance of residual microgravity acceleration (less than or approx. equal to 0.4 micro-grams) even in the sub-microgravity range for the slow solidification velocities and large density gradients.

  2. Characterization of a large CdZnTe coplanar quad-grid semiconductor detector

    CERN Document Server

    Ebert, Joachim; Gehre, Daniel; Hagner, Caren; Heidrich, Nadine; Klingenberg, Rainer; Kröninger, Kevin; Nitsch, Christian; Oldorf, Christian; Quante, Thomas; Rajek, Silke; Rebber, Henning; Rohatsch, Katja; Tebrügge, Jan; Temminghoff, Robert; Theinert, Robert; Timm, Jan; Wonsak, Björn; Zatschler, Stefan; Zuber, Kai

    2015-01-01

    The COBRA collaboration aims to search for neutrinoless double beta-decay of $^{116}$Cd. A demonstrator setup with 64 CdZnTe semiconductor detectors, each with a volume of 1cm$^3$, is currently being operated at the LNGS underground laboratory in Italy. This paper reports on the characterization of a large (2 $\\times$ 2 $\\times$ 1.5)cm$^3$ CdZnTe detector with a new coplanar-grid design for applications in $\\gamma$-ray spectroscopy and low-background operation. Several studies of electric properties as well as of the spectrometric performance, like energy response and resolution, are conducted. Furthermore, measurements including investigating the operational stability and a possibility to identify multiple-scattered photons are presented.

  3. Band offsets for mismatched interfaces. The special case of ZnO on CdTe (001)

    Energy Technology Data Exchange (ETDEWEB)

    Jaffe, John E. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Kaspar, Tiffany C. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Droubay, Timothy C. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Varga, Tamas [Pacific Northwest National Lab. (PNNL), Richland, WA (United States)

    2013-08-02

    High-quality planar interfaces between ZnO and CdTe would be useful in optoelectronic applications, but appear difficult to achieve given the rather different crystal structures (CdTe is zinc blende with cubic lattice constant a = 6.482 Å, ZnO is hexagonal wurtzite with a = 3.253 Å and c = 5.213 Å.) However, ZnO has been reported to occur in some epitaxially stabilized films in the zinc blende structure with an fcc primitive lattice constant close to the hexagonal a value. Observing that this value equals half of the CdTe cubic lattice constant to within 1%, we propose that (001)-oriented cubic ZnO films could be grown epitaxially on a CdTe (001) surface in an R45° √2 x √2 configuration. Many terminations and alignments (in-plane fractional translations) are possible, and we describe density-functional total-energy electronic-structure calculations on several configurations to identify the most likely form of the interface, and to predict valence-band offsets between CdTe and ZnO in each case. Growth of ZnO on Te-terminated CdTe (001) is predicted to produce small or even negative (CdTe below ZnO) valence band offsets, resulting in a Type I band alignment. Growth on Cd-terminated CdTe is predicted to produce large positive offsets for a type II alignment as needed, for example, in solar cells. We also describe recent experiments that corroborate some of these predictions.

  4. IDeF-X ASIC for Cd(Zn)Te spectro-imaging systems

    OpenAIRE

    Limousin, O.; Gevin, O.; Lugiez, F.; Chipaux, R; Delagnes, E.; Dirks, B.; Horeau, B.

    2004-01-01

    Joint progresses in Cd(Zn)Te detectors, microelectronics and interconnection technologies open the way for a new generation of instruments for physics and astrophysics applications in the energy range from 1 to 1000 keV. Even working between -20 and 20 degrees Celsius, these instruments will offer high spatial resolution (pixel size ranging from 300 x 300 square micrometers to few square millimeters), high spectral response and high detection efficiency. To reach these goals, reliable, highly...

  5. CdZnTe gamma ray spectrometer for orbital planetary missions

    Energy Technology Data Exchange (ETDEWEB)

    Feldman, W. C. (William C.); Storms, S. A. (Steven A.); Fuller, K. R. (Kenneth R.); Moss, C. E. (Calvin E.); Browne, M. C. (Michael C.); Lawrence, David J. (David Jeffery),; Ianakiev, K. D.; Prettyman, T. H. (Thomas H.)

    2001-01-01

    Knowledge of surface elemental composition is needed to understand the formation and evolution of planetary bodies. Gamma rays and neutrons produced by the interaction of galactic cosmic rays with surface materials can be detected from orbit and analyzed to determine composition. Using gamma ray spectroscopy, major rock forming elements such as Fe, Ti, Al, Si, Mg, and Ca can be detected. The accuracy of elemental abundance is limited by the resolution of the spectrometer. For space missions, scintillators such as BGO and NaI(Tl) have been used for gamma ray spectroscopy. New planetary science missions are being planned to explore Mars, Mercury, the asteroid belt, and the outer planets. Significant improvements in the pulse height resolution relative to scintillation detectors can be made using CdZnTe, a new room temperature detector technology. For an orbiting instrument, a CdZnTe detector at least 16 cm{sup 3} in size is needed. A 4 x 4 array of 1-cm{sup 3} coplanar grid detectors can be manufactured that meets requirements for resolution and counting efficiency. The array will shielded from gamma rays produced in the spacecraft by a BGO detector. By improving pulse height resolution by a factor of three at low energy, the CdZnTe detector will be able to make accurate measurements of elements that are currently difficult to measure using scintillation technology. The BGO shield will provide adequate suppression of gamma rays originating in the spacecraft, enabling the gamma ray spectrometer to be mounted on the deck of a spacecraft. To test this concept, we are constructing a flight qualified, prototype CdZnTe detector array. The prototype consists of a 2 x 2 array of coplanar grid detectors. We will present the results of mechanical and electronic testing and radiation damage tests, and the performance of the array for gamma ray spectroscopy.

  6. Hard x-ray response of pixellated CdZnTe detectors

    Science.gov (United States)

    Abbene, L.; Del Sordo, S.; Caroli, E.; Gerardi, G.; Raso, G.; Caccia, S.; Bertuccio, G.

    2009-06-01

    In recent years, the development of cadmium zinc telluride (CdZnTe) detectors for x-ray and gamma ray spectrometry has grown rapidly. The good room temperature performance and the high spatial resolution of pixellated CdZnTe detectors make them very attractive in space-borne x-ray astronomy, mainly as focal plane detectors for the new generation of hard x-ray focusing telescopes. In this work, we investigated on the spectroscopic performance of two pixellated CdZnTe detectors coupled with a custom low noise and low power readout application specific integrated circuit (ASIC). The detectors (10×10×1 and 10×10×2 mm3 single crystals) have an anode layout based on an array of 256 pixels with a geometric pitch of 0.5 mm. The ASIC, fabricated in 0.8 μm BiCMOS technology, is equipped with eight independent channels (preamplifier and shaper) and characterized by low power consumption (0.5 mW/channel) and low noise (150-500 electrons rms). The spectroscopic results point out the good energy resolution of both detectors at room temperature [5.8% full width at half maximum (FWHM) at 59.5 keV for the 1 mm thick detector; 5.5% FWHM at 59.5 keV for the 2 mm thick detector) and low tailing in the measured spectra, confirming the single charge carrier sensing properties of the CdZnTe detectors equipped with a pixellated anode layout. Temperature measurements show optimum performance of the system (detector and electronics) at T =10 °C and performance degradation at lower temperatures. The detectors and the ASIC were developed by our collaboration as two small focal plane detector prototypes for hard x-ray multilayer telescopes operating in the 20-70 keV energy range.

  7. Charge-sensitive front-end electronics with operational amplifiers for CdZnTe detectors

    OpenAIRE

    Födisch, P.; Berthel, M.; Lange, B; Kirschke, T.; Enghardt, W.; Kaever, P.

    2016-01-01

    Cadmium zinc telluride (CdZnTe, CZT) radiation detectors are suitable for a variety of applications, due to their high spatial resolution and spectroscopic energy performance at room temperature. However, state-of-the-art detector systems require high-performance readout electronics. Though an application-specific integrated circuit (ASIC) is an adequate solution for the readout, requirements of high dynamic range and high throughput are not available in any commercial circuit. Consequently, ...

  8. Research of CdZnTe detector based portable energy dispersive spectrometer

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    A kind of excellent CdZnTe crystal has been grown in Yinnel Tech, Inc. in recent years. Based on these CdZnTe crystals and some new techniques, a portable energy-dispersive spectrometer has been constructed which has yielded good results. CdZnTe detector has a 3% relative resolution in high-energy field and can detect gamma rays at room temperature. An integrated circuit based on preamplifier and shaping amplifier chips is connected to the detector.Voltage pulses are transformed into digital signals in MCA (multichannel analyzer) and are then transmitted to computer via USB bus. Data process algorithms are improved in this spectrometer. Fast Fourier transform (FFT) and numerical differentiation (ND) are used in energy peak's searching program. Sampling-based correction technique is used in X-ray energy calibration. Modified Gaussian-Newton algorithm is a classical method to solve nonlinear curve fitting problems, and it is used to compute absolute intensity of each detected characteristic line.

  9. High resistivity In-doped ZnTe: electrical and optical properties

    Indian Academy of Sciences (India)

    D N Bose; S Bhunia

    2005-12-01

    Semi-insulating < 111 > ZnTe prepared by In doping during Bridgman growth was found to have a resistivity of 5.74 × 107 ohm-cm, the highest reported so far in ZnTe, with hole concentration of 2.4 × 109/cm3 and hole mobility of 46 cm2/V.s at 300 K. The optical band gap was 2.06 eV at 293 K compared with 2.26 eV for undoped semiconducting ZnTe. Thermally stimulated current (TSC) studies revealed 2 trap levels at depths of 202–222 meV and 412–419 meV, respectively. Photoluminescence (PL) studies at 10 K showed strong peaks at 1.37 eV and 1.03 eV with a weak shoulder at 1.43 eV. Short anneal for 3 min at 250°C led to conversion to a -type material with resistivity, 14.5 ohm-cm, indicating metastable behaviour. Raman studies carried out on undoped and In-doped samples showed small but significant differences. Possible models for semi-insulating behaviour and meta-stability are proposed.

  10. Microstructural parameters and optical constants of ZnTe thin films with various thicknesses

    Science.gov (United States)

    Shaaban, Essam R.; Kansal, Ishu; Mohamed, S. H.; Ferreira, Joés M. F.

    2009-11-01

    Different thickness of polycrystalline ZnTe films have been deposited onto glass substrates at room temperature by vacuum evaporation technique. The structural characteristics studied by X-ray diffraction (XRD) showed that the films are polycrystalline and have a zinc blende (cubic) structure. The calculated microstructure parameters revealed that the crystallite size increases and microstrain decreases with increasing film thickness. The transmittance and reflectance have been measured at normal and near normal incidence, respectively, in the spectral range 400-2500 nm. For ZnTe films of different thicknesses, the dependence of absorption coefficient, α on the photon energy showed the occurrence of a direct transition with band gap energy Egopt=2.21±0.01 eV (For ZnTe films of different thicknesses) confirming the independency of deduced energy gap on film thickness. The refractive indices have been evaluated in terms of envelope method, which has been suggested by Swanepoul in the transparent region. The refractive index could be extrapolated by Cauchy dispersion relationship over the whole spectra range, which extended from 400 to 2500 nm. It was observed that the refractive index, n increased upon increasing the film thickness up to 508 nm, lying within the experimental error for further increases in film thickness.

  11. Performance evaluation of a hand-held, semiconductor (CdZnTe)-based gamma camera

    CERN Document Server

    Abe, A; Lee, J; Oka, T; Shizukuishi, K; Kikuchi, T; Inoue, T; Jimbo, M; Ryuo, H; Bickel, C

    2003-01-01

    We have designed and developed a small field of view gamma camera, the eZ SCOPE, based on use of a CdZnTe semiconductor. This device utilises proprietary signal processing technology and an interface to a computer-based imaging system. The purpose of this study was to evaluate the performance of the eZ scope in comparison with currently employed gamma camera technology. The detector is a single wafer of 5-mm-thick CdZnTe that is divided into a 16 x 16 array (256 pixels). The sensitive area of the detector is a square of dimension 3.2 cm. Two parallel-hole collimators are provided with the system and have a matching (256 hole) pattern to the CdZnTe detector array: a low-energy, high-resolution parallel-hole (LEHR) collimator fabricated of lead and a low-energy, high-sensitivity parallel-hole (LEHS) collimator fabricated of tungsten. Performance measurements and the data analysis were done according to the procedures of the NEMA standard. We also studied the long-term stability of the system with continuous use...

  12. A single CdZnTe detector for simultaneous CT/SPECT imaging

    Energy Technology Data Exchange (ETDEWEB)

    Barber, W.C. E-mail: bill@barber.uscf.edu; Iwata, Koji; Hasegawa, B.H.; Bennett, P.R.; Cirignano, L.J.; Shah, K.S

    2003-06-01

    Clinical CT/SPECT systems acquire CT and SPECT data sequentially using different detectors in close proximity to minimise patient movement and interscan delay. We have developed a prototype simultaneous CT/SPECT imager, using a single CdZnTe detector, with the goal of improving image coregistration and decreasing scan time. A 16-pixel CdZnTe detector was operated in pulse-counting mode with 50 ns shaping time. Energy discrimination is used to separate the CT and SPECT data. Simultaneous SPECT and CT images were obtained for a phantom with the X-ray flux limited to reduce pulse pile-up in the radionuclide energy window. At 140 keV, the efficiency and energy resolution are 70% and 10%, respectively, and were constant for fluence rates up to 10{sup 3} cps per detector element for 140 keV gamma rays, but degrade rapidly at higher fluence rates. In pulse-counting mode, the maximum count rate of 10{sup 3} cps per element from the CdZnTe detector is sufficient for SPECT imaging, but is considerably lower than the fluence rates encountered in CT. The smallest lesion visually detectable in SPECT is 9 mm and the CT spatial resolution is smaller than 4.5 mm. Image registration is intrinsic because the data can be acquired simultaneously with a single detector with the same reconstruction geometry.

  13. Nanomechanical behaviors of (110) and (111) CdZnTe crystals investigated by nanoindentation

    Institute of Scientific and Technical Information of China (English)

    LI Yan; KANG Renke; GAO Hang; WANG Jinghe; LANG Yanju

    2009-01-01

    The nanomechanical behaviors of (110) and (111) CdZnTe crystals were investigated by nanoindentation. It was found that the indenter tip was adhered by the removed materials in scanning testing area although the scanning force on the tested surface was very small (1000 nN), which would affect the testing result of nanoindentation, so the indenter was clean before nanoindentation test. The experimemtal results showed that the hardness and Young's modulus decreased with the increase of indentation loads on the same plane. Because of the anisot-ropy of the CdZnTe crystal, the average hardness of (110) plane is 35% lower than that of (l 11 ) plane, and there are about 30% difference of the hardness along different crystallographic directions on the same plane. The hardness in 0° and 120° testing directions was the same due to the threefold symmetry of a Berkovich indenter. And the anisotropy affected the surface quality during machining of CdZnTe crystal.

  14. Study on Spectral Response beyond Cut off of Cs2Te Ultra Violet Photo Cathode%Cs2Te紫外光电阴极带外光谱响应研究

    Institute of Scientific and Technical Information of China (English)

    李晓峰; 姜云龙; 李靖雯; 姬明; 李金沙; 张勤东

    2015-01-01

    With the strong light as the input, the spectral response beyond cut off of the Cs2Te ultraviolet photo cathode is measured. The results show that the spectral response of the Cs2Te cathode beyond cut off is lower, and is several orders of magnitude lower than that within the cutoff. The peak sensitivity of within cutoff can be greater than 40mA/W, but the spectral response beyond cut off can be as low as 10-3mA/W order of magnitude at 550nm wavelength. The divergence of spectral response beyond cut off of Cs2Te ultraviolet photo cathode made with the same process is large. According to the test of three different visible light photo cathode, namely Na2KSb (Cs), K2CsSb and GaAs (Cs-O), it is proved that these three kinds of visible light photo cathode also have certain spectral response. The test data show that the spectral response beyond cut off is related to the size of the work function (positive electron affinity cathode) or the band gap (negative electron affinity cathode). The smaller the work function or the band gap is, the greater the spectral response beyond cut off. The spectral response beyond cut off is a common phenomenon for photo cathode. The reason is that the effect of multiphoton absorption, i.e. multiphoton effect. Because Cs2Te photo cathodes are present spectral response beyond cut off, thus, when solar blind image intensifier adopting Cs2Te photo cathodes is used in the strong sun light or straight to the sun's light, detected signal would be disturbed by the light of the sun, or by the image of the sun like. Thus solar blind image intensifier does not have the sun blind characteristic. In order to make the solar blind ultraviolet image intensifier fully equipped with solar blind characteristic, solar blind filter is needed. Combining solar blind filter with spectral response of Cs2Te cathode beyond cut off, solar blind image intensifier can achieve complete solar blind. So in the practical application of ultra violet detecting, the solar

  15. Influence of Te and Se doping on ZnO films growth by SILAR method

    Science.gov (United States)

    Güney, Harun; Duman, Ćaǧlar

    2016-04-01

    The AIP Successive ionic layer adsorption and reaction (SILAR) is an economic and simple method to growth thin films. In this study, SILAR method is used to growth Selenium (Se) and Tellurium (Te) doped zinc oxide (ZnO) thin films with different doping rates. For characterization of the films X-ray diffraction (XRD), absorbance and scanning electron microscopy (SEM) are used. XRD results are showed well-defined strongly (002) oriented crystal structure for all samples. Also, absorbance measurements show, Te and Se concentration are proportional and inversely proportional with band gap energy, respectively. SEM measurements show that the surface morphology and thickness of the material varied with Se and/or Te and varying concentrations.

  16. ZnSe/ITO thin films: candidate for CdTe solar cell window layer

    Science.gov (United States)

    Khurram, A. A.; Imran, M.; Khan, Nawazish A.; Nasir Mehmood, M.

    2017-09-01

    The crystal structure, electrical and optical properties of ZnSe thin films deposited on an In2O3:Sn (ITO) substrate are evaluated for their suitability as the window layer of CdTe thin film solar cells. ZnSe thin films of 80, 90, and 100 nm thickness were deposited by a physical vapor deposition method on Indium tin oxide coated glass substrates. The lattice parameters are increased to 5.834 Å when the film thickness was 100 nm, which is close to that of CdS. The crystallite size is decreased with the increase of film thickness. The optical transmission analysis shows that the energy gap for the sample with the highest thickness has also increased and is very close to 2.7 eV. The photo decay is also studied as a function of ZnSe film thickness.

  17. Morphology, electrical, and optical properties of heavily doped ZnTe:Cu thin films

    Energy Technology Data Exchange (ETDEWEB)

    El Akkad, Fikry [Physics Department, College of Science, Kuwait University, P.O. Box 5969, Safat 13060 (Kuwait); Abdulraheem, Yaser [Department of Electrical Engineering, College of Engineering and Petroleum, Kuwait University, Safat 13060 Kuwait (Kuwait)

    2013-11-14

    We report on a study of the physical properties of ZnTe:Cu films with Cu content up to ∼12 at. % prepared using rf magnetron sputtering. The composition and lateral homogeneities are studied using X-ray photoelectron spectroscopy (XPS). Atomic force microscopy measurements on films deposited at different substrate temperatures (up to 325 °C) yielded activation energy of 12 kJ/mole for the grains growth. The results of XPS and electrical and optical measurements provide evidence for the formation of the ternary zinc copper telluride alloy in films containing Cu concentration above ∼4 at. %. The XPS results suggest that copper is incorporated in the alloy with oxidation state Cu{sup 1+} so that the alloy formula can be written Zn{sub 1−y}Cu{sub y} Te with y = 2−x, where x is a parameter measuring the stoichiometry in the Cu site. The formation of this alloy causes appreciable shift in the binding energies of the XPS peaks besides an IR shift in the energy band gap. Detailed analysis of the optical absorption data revealed the presence of two additional transitions, besides the band gap one, originating from the Γ{sub 8} and Γ{sub 7} (spin-orbit) valence bands to a donor level at ∼0.34 eV below the Γ{sub 6} conduction band. This interpretation yields a value for the valence band splitting energy Δ≅ 0.87 eV independent of copper concentration. On the other hand, the mechanism of formation of the alloy is tentatively explained in terms of a point defect reaction in which substitutional Cu defect Cu{sub Zn} is also created. Assuming that substitutional Cu is the dominant acceptor in the Zn rich alloy as in ZnTe, its formation energy was determined to be 1.7 eV close to the theoretical value (1.41 eV) in ZnTe.

  18. Impact of annealing on the chemical structure and morphology of the thin-film CdTe/ZnO interface

    Energy Technology Data Exchange (ETDEWEB)

    Horsley, K., E-mail: horsley5@unlv.nevada.edu; Hanks, D. A.; Weir, M. G. [Department of Chemistry, University of Nevada, Las Vegas (UNLV), Las Vegas, Nevada 89154 (United States); Beal, R. J. [Materials Science and Engineering Department, University of Arizona, Tucson, Arizona 85721 (United States); Wilks, R. G. [Solar Energy Research, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH (HZB), 14109 Berlin (Germany); Blum, M. [Department of Chemistry, University of Nevada, Las Vegas (UNLV), Las Vegas, Nevada 89154 (United States); Advanced Light Source (ALS), Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Häming, M. [Department of Chemistry, University of Nevada, Las Vegas (UNLV), Las Vegas, Nevada 89154 (United States); Institute for Photon Science and Synchrotron Radiation, Karlsruhe Institute of Technology (KIT), 76344 Eggenstein-Leopoldshafen (Germany); Hofmann, T. [Department of Chemistry, University of Nevada, Las Vegas (UNLV), Las Vegas, Nevada 89154 (United States); Bundeswehr Research Institute for Materials, Fuels and Lubricants (WIWeB), Institutsweg 1, 85435 Erding (Germany); Weinhardt, L. [Department of Chemistry, University of Nevada, Las Vegas (UNLV), Las Vegas, Nevada 89154 (United States); Institute for Photon Science and Synchrotron Radiation, Karlsruhe Institute of Technology (KIT), 76344 Eggenstein-Leopoldshafen (Germany); ANKA Synchrotron Radiation Facility, Karlsruhe Institute of Technology (KIT), 76344 Eggenstein-Leopoldshafen (Germany); and others

    2014-07-14

    To enable an understanding and optimization of the optoelectronic behavior of CdTe-ZnO nanocomposites, the morphological and chemical properties of annealed CdTe/ZnO interface structures were studied. For that purpose, CdTe layers of varying thickness (4–24 nm) were sputter-deposited on 100 nm-thick ZnO films on surface-oxidized Si(100) substrates. The morphological and chemical effects of annealing at 525 °C were investigated using X-ray Photoelectron Spectroscopy (XPS), X-ray-excited Auger electron spectroscopy, energy dispersive X-ray spectroscopy, scanning electron microscopy, and atomic force microscopy. We find a decrease of the Cd and Te surface concentration after annealing, parallel to an increase in Zn and O signals. While the as-deposited film surfaces show small grains (100 nm diameter) of CdTe on the ZnO surface, annealing induces a significant growth of these grains and separation into islands (with diameters as large as 1 μm). The compositional change at the surface is more pronounced for Cd than for Te, as evidenced using component peak fitting of the Cd and Te 3d XPS peaks. The modified Auger parameters of Cd and Te are also calculated to further elucidate the local chemical environment before and after annealing. Together, these results suggest the formation of tellurium and cadmium oxide species at the CdTe/ZnO interface upon annealing, which can create a barrier for charge carrier transport, and might allow for a deliberate modification of interface properties with suitably chosen thermal treatment parameters.

  19. Evaluation of a multistage CdZnTe Compton camera for prompt γ imaging for proton therapy

    Science.gov (United States)

    McCleskey, M.; Kaye, W.; Mackin, D. S.; Beddar, S.; He, Z.; Polf, J. C.

    2015-06-01

    A new detector system, Polaris J from H3D, has been evaluated for its potential application as a Compton camera (CC) imaging device for prompt γ rays (PGs) emitted during proton radiation therapy (RT) for the purpose of dose range verification. This detector system consists of four independent CdZnTe detector stages and a coincidence module, allowing the user to construct a Compton camera in different geometrical configurations and to accept both double and triple scatter events. Energy resolution for the 662 keV line from 137Cs was found to be 9.7 keV FWHM. The raw absolute efficiencies for double and triple scatter events were 2.2 ×10-5 and 5.8 ×10-7, respectively, for γs from a 60Co source. The position resolution for the reconstruction of a point source from the measured CC data was about 2 mm. Overall, due to the low efficiency of the Polaris J CC, the current system was deemed not viable for imaging PGs emitted during proton RT treatment delivery. However, using a validated Monte Carlo model of the CC, we found that by increasing the size of the detectors and placing them in a two stage configuration, the efficiency could be increased to a level to make PG imaging possible during proton RT.

  20. Effect of electron transport properties on unipolar CdZnTe radiation detectors: LUND, SpectrumPlus, and Coplanar Grid

    Energy Technology Data Exchange (ETDEWEB)

    Ralph B. James

    2000-01-07

    Device simulations of (1) the laterally-contacted-unipolar-nuclear detector (LUND), (2) the SpectrumPlus, (3) and the coplanar grid made of Cd{sub 0.9}Zn{sub 0.1}Te (CZT) were performed for {sup 137}Cs irradiation by 662.15 keV gamma-rays. Realistic and controlled simulations of the gamma-ray interactions with the CZT material were done using the MCNP4B2 Monte Carlo program, and the detector responses were simulated using the Sandia three-dimensional multielectrode simulation program (SandTMSP). The simulations were done for the best and the worst expected carrier nobilities and lifetimes of currently commercially available CZT materials for radiation detector applications. For the simulated unipolar devices, the active device volumes were relatively large and the energy resolutions were fairly good, but these performance characteristics were found to be very sensitive to the materials properties. The internal electric fields, the weighting potentials, and the charge induced efficiency maps were calculated to give insights into the operation of these devices.

  1. Aligned ZnO/CdTe core-shell nanocable arrays on indium tin oxide: synthesis and photoelectrochemical properties.

    Science.gov (United States)

    Wang, Xina; Zhu, Haojun; Xu, Yeming; Wang, Hao; Tao, Yin; Hark, Suikong; Xiao, Xudong; Li, Quan

    2010-06-22

    Vertically aligned ZnO/CdTe core-shell nanocable arrays-on-indium tin oxide (ITO) are fabricated by electrochemical deposition of CdTe on ZnO nanorod arrays in an electrolyte close to neutral pH. By adjusting the total charge quantity applied during deposition, the CdTe shell thickness can be tuned from several tens to hundreds of nanometers. The CdTe shell, which has a zinc-blende structure, is very dense and uniform both radially and along the axial direction of the nanocables, and forms an intact interface with the wurtzite ZnO nanorod core. The absorption of the CdTe shell above its band gap ( approximately 1.5 eV) and the type II band alignment between the CdTe shell and the ZnO core, respectively, demonstrated by absorption and photoluminescence measurements, make a nanocable array-on-ITO architecture a promising photoelectrode with excellent photovoltaic properties for solar energy applications. A photocurrent density of approximately 5.9 mA/cm(2) has been obtained under visible light illumination of 100 mW cm(-2) with zero bias potential (vs saturated calomel electrode). The neutral electrodeposition method can be generally used for plating CdTe on nanostructures made of different materials, which would be of interest in various applications.

  2. Explorations of new types of second-order nonlinear optical materials in Cd(Zn)-VV-TeIV-O Systems.

    Science.gov (United States)

    Jiang, Hai-Long; Huang, Shu-Ping; Fan, Yang; Mao, Jiang-Gao; Cheng, Wen-Dan

    2008-01-01

    Solid-state reactions of zinc(II) or cadmium(II) oxide, V(2)O(5), and TeO(2) at high temperature led to two novel quaternary compounds, namely, Zn(3)V(2)TeO(10) and Cd(4)V(2)Te(3)O(15). The structure of Zn(3)V(2)TeO(10) is a complicated three-dimensional (3D) network constructed by the interconnection of ZnO(5), ZnO(6), VO(4), and TeO(4) polyhedra via corner- and edge-sharing. Cd(4)V(2)Te(3)O(15) with an acentric structure features a 3D network in which the cadmium tellurite layers are further interconnected by both "isolated" VO(4) tetrahedra and one-dimensional (1D) vanadium oxide helical chains. Cd(4)V(2)Te(3)O(15) displays a second harmonic generation (SHG) efficiency of about 1.4 times that of KH(2)PO(4) (KDP). Both compounds are direct band-gap semiconductors and are transparent in the range of 0.6-10.0 mum. Measurements of luminescence indicate that both compounds exhibit broad emission bands in the blue-light region.

  3. CdTe deposition by successive ionic layer adsorption and reaction (SILAR) technique onto ZnO nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Salazar, Raul; Delamoreanu, Alexandru; Saidi, Bilel; Ivanova, Valentina [CEA, LETI, MINATEC Campus, 17 Rue des Martyrs, 38054, Grenoble (France); Levy-Clement, Claude [CNRS, Institut de Chimie et des Materiaux de Paris-Est, 94320, Thiais (France)

    2014-09-15

    In this study is reported CdTe deposition by Successive Ionic Layer Adsorption and reaction (SILAR) at room temperature onto ZnO nanowires (NWs). The as-deposited CdTe layer exhibits poor crystalline quality and not well defined optical transition which is probably result of its amorphous nature. The implementation of an annealing step and chemical treatment by CdCl{sub 2} to the classical SILAR technique improved significantly the CdTe film quality. The XRD analysis showed that the as treated layers are crystallized in the cubic zinc blende structure. The full coverage of ZnO nanowires and thickness of the CdTe shell, composed of small crystallites, was confirmed by STEM and TEM analysis. The layer thickness could be controlled by the number of SILAR cycles. The sharper optical transitions for the annealed and CdCl{sub 2} treated heterostructures additionally proves the enhancement of the layer crystalline quality. For comparison CdTe was also deposited by close space sublimation (CSS) method onto ZnO nanowires. It is shown that the SILAR deposited CdTe exhibits equal crystalline and optical properties to that prepared by CSS. These results demonstrate that SILAR technique is more suitable for conformal thin film deposition on nanostructures. CdTe extremely thin film deposited by SILAR method onto ZnO nanowire. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  4. Development and analysis of Cu-doped ZnTe for use as a back contact interface for CdS/CdTe solar cells

    Science.gov (United States)

    Gessert, T. A.; Coutts, T. J.

    1994-06-01

    It is well known that the losses associated with the back contact of typical CdS/CdTe solar cell devices can be a substantial part of the total external loss. Previous modeling has indicated that these losses will be significant, unless the value of specific contact resistance (rc) at this interface is reduced to ˜0.10 Ω-cm2 or less. Although several studies have inferred values of rc near this level, few have attempted to measure directly the value of rc as a function of various processing conditions. One reason for this situation is the difficulty in fabricating the appropriate patterns for direct analysis of rc. In the following paper, initial characterization studies of sputter-deposited, Cu-doped ZnTe are documented. Additionally, recent attempts to measure directly the contact resistance associated with the two interfaces of the Ni/ZnTe/CdTe contact stack, are presented and discussed. Preliminary testing of these processes has been conducted using sputter-deposited test structures representing the individual interfaces of a typical Ni/ZnTe/CdTe contact stack. Contact resistance analysis of these structures has allowed for the estimation of rc suggesting that, for the conditions studied, the contact stack appears to meet the criterion of yielding an rc value <0.1 Ω-cm2.

  5. 不同沉积条件下ZnTe与ZnTe:Cu复合背接触层对CdTe太阳电池性能的影响%The Effect of Deposition Parameters on ZnTe and ZnTe : Cu Thin Film

    Institute of Scientific and Technical Information of China (English)

    钟永强; 郑家贵; 冯良桓; 王文武; 贺剑雄

    2011-01-01

    制备高效的CdTe太阳电池,改善电池的背接触特性是一关键技术.背接触层中掺Cu能够得到性能良好的电池,但Cu在CdTe中进一步扩散,会形成缺陷,造成CdTe太阳电池性能不稳定.因此,有必要系统研究Cu原子在薄膜中的存在状态,进而有效控制Cu的浓度;另一方面,要获得良好的背接触层,必须制备出结构致密的ZnTe与五ZnTe:Cu多晶薄膜.研究了衬底温度及沉积速率的变化对ZnTe:Cu薄膜质量及电池性能的影响.在常温下沉积ZnTe后,提高衬底温度沉积ZnTe:Cu对太阳能电池的影响明显,得到了转化效率达10.28%的电池.

  6. Low noise CMOS readout for CdZnTe detector arrays

    CERN Document Server

    Jakobson, C G; Lev, S B; Nemirovsky, Y

    1999-01-01

    A low noise CMOS readout for CdTe and CdZnTe X- and gamma-ray detector arrays has been designed and implemented in the CMOS 2 mu m low noise analog process provided by the multi-chip program of Metal Oxide Semiconductor Implementation Service. The readout includes CMOS low noise charge sensitive preamplifier and a multiplexed semi-Gaussian pulse shaper. Thus, each detector has a dedicated charge sensitive preamplifier that integrates its signal, while a single shaping amplifier shapes the pulses after the multiplexer. Low noise and low-power operation are achieved by optimizing the input transistor of the charge sensitive preamplifier. Two optimization criteria are used to reduce noise. The first criterion is based on capacitance matching between the input transistor and the detector. The second criterion is based on bandwidth optimization, which is obtained by tailoring the shaper parameters to the particular noise mechanisms of the MOS transistor and the CdZnTe detector. Furthermore, the multiplexing functi...

  7. Low noise CMOS readout for CdZnTe detector arrays

    Energy Technology Data Exchange (ETDEWEB)

    Jakobson, C.G.; Asa, G.; Lev, S. Bar; Nemirovsky, Y. E-mail: nemirov@ee.technion.ac.il

    1999-06-01

    A low noise CMOS readout for CdTe and CdZnTe X- and gamma-ray detector arrays has been designed and implemented in the CMOS 2 {mu}m low noise analog process provided by the multi-chip program of Metal Oxide Semiconductor Implementation Service. The readout includes CMOS low noise charge sensitive preamplifier and a multiplexed semi-Gaussian pulse shaper. Thus, each detector has a dedicated charge sensitive preamplifier that integrates its signal, while a single shaping amplifier shapes the pulses after the multiplexer. Low noise and low-power operation are achieved by optimizing the input transistor of the charge sensitive preamplifier. Two optimization criteria are used to reduce noise. The first criterion is based on capacitance matching between the input transistor and the detector. The second criterion is based on bandwidth optimization, which is obtained by tailoring the shaper parameters to the particular noise mechanisms of the MOS transistor and the CdZnTe detector. Furthermore, the multiplexing function incorporated in the shaper provides low power and reduces chip area. The system is partitioned into a chip containing the charge amplifiers and a chip containing the semi-Gaussian pulse shaper and multiplexer. This architecture minimizes coupling from multiplexer switches as well as shaper output to the input of the charge sensitive preamplifiers.

  8. A new fluorescent film sensor for Pb(II) ions developed by simulating bio-mineralization process synthesizing of ZnS/CS nanocomposite

    Energy Technology Data Exchange (ETDEWEB)

    Wang Shan, E-mail: shanwang2005@163.com [School of Chemistry and Chemical Engineering, Xianyang Normal University, Xianyang, 712000, Shaanxi Province (China) and Department of Applied Chemistry, Xi' an Jiaotong University, Xi' an, 710049, Shaanxi Province (China); Yu Demei; Wu Guangwen [Department of Applied Chemistry, Xi' an Jiaotong University, Xi' an, 710049, Shaanxi Province (China); Guo Jinchan; Lei Cao [School of Chemistry and Chemical Engineering, Xianyang Normal University, Xianyang, 712000, Shaanxi Province (China)

    2011-07-25

    Highlights: > Chitosan/zinc sulfide (CS/ZnS) nano-composite films have been prepared by simulating bio-mineralization process.the sensing properties of nano-composite films to lead ions have been systematically investigated. > SEM and TEM observations showed that the size of ZnS particles in the CS films. > The fluorescence emission of the nanocomposite films is very sensitive to the presence of Pb ions and the emission is hardly affected by common ions in water, except for the iron ions. > The films may be developed as excellent sensing films for Pb ions in water. - Abstract: Chitosan/zinc sulfide (CS/ZnS) nano-composite films have been prepared by simulating bio-mineralization process. Factors affecting the hydrothermal stability and fluorescence properties of the films have been studied. Furthermore, the sensing properties of nano-composite films to lead ions have been systematically investigated. SEM and TEM observations showed that the size of ZnS particles is 70 nm, and the particles are evenly distributed within the CS films. The fluorescence emission of the nano-composite films indicates that the sizes of real fluorescing ZnS particles are less than 20 nm. This suggests that ZnS particles observed via SEM and TEM may be aggregates of smaller ZnS particles, and the smaller particles may be separated by the organics. The fluorescence emission (363 nm) of the nano-composite films is very sensitive to the presence of Pb ions. C{sub (Pb}{sup 2+}{sub )} increased from 0 to 664.2 mg L{sup -1} increases the emission dramatically. The emission is hardly affected by common ions in water, except for the iron ions. The films may be developed as excellent sensing films for Pb ions in water.

  9. Thermal activated energy transfer between luminescent states of Mn2+-doped ZnTe nanoparticles embedded in a glass matrix.

    Science.gov (United States)

    Dantas, Noelio O; Silva, Alessandra S; Freitas Neto, Ernesto S; Lourenço, Sidney A

    2012-03-14

    Zn(1-x)Mn(x)Te nanocrystals (NCs), at various concentrations x, were successfully grown in a host glass matrix by the fusion method after appropriate annealing. Growth of these NCs was evidenced by optical absorption (OA), X-Ray Diffraction (XRD), magnetic force microscopy (MFM) and photoluminescence (PL) measurements. From the room temperature OA spectra, it was possible to observe the formation of two well defined, different sized groups of NCs, one attributed to quantum dots (QDs) and the other to bulk-like nanocrystals (NCs). XRD results have confirmed that the cubic zincblend structure of nanoparticles is not altered by the substitutional incorporation of Mn(2+) ions into the ZnTe NCs. MFM images supported the OA spectra results and thus provided additional confirmation of the formation of Zn(1-x)Mn(x)Te magnetic nanoparticles in the host glass matrix. The two groups of NCs were also observed in the PL spectra as well as deep defects attributed to the presence of oxygen centers in the electronic structure of the Zn(1-x)Mn(x)Te NCs. Strong agreement between the fitting model, based on rate equation, and experimental PL intensity data at different temperatures demonstrates that this model adequately describes the energy transfer processes between the NCs and the defects of the Zn(1-x)Mn(x)Te system at different temperatures.

  10. CMOS Pixel Spectroscopic Circuits for Cd(ZnTe Gamma Ray Imagers

    Directory of Open Access Journals (Sweden)

    Hatzistratis D.

    2016-01-01

    Full Text Available A family of 2-D pixel CMOS ASICs have been developed to be used as readout electronics of gamma ray imaging instruments based on hybrid pixel sensor arrays. One element of the sensor array consists of a pixilated single crystal of CdTe or CdZnTe semiconductor bump bonded to the CMOS electronic circuit. The first member of the family can process single photon signals which deliver up to 4fCb charge, while the two other can process signals up to 36fCb. A unique readout mode and the simultaneous extraction of energy and time tagging information of the converted photons differentiate the members of this family from other existing CMOS readout circuits.

  11. Characterization and optical properties of TeO2/ZnO nanocomposites synthesized in a narrow temperature range

    Science.gov (United States)

    Lee, Dongjin; Park, Seokhyun; Kim, Hee Jung; Hyun, Soong-Keun; Choe, Kyeonghwan; Jin, Changhyun

    2017-08-01

    Two different TeO2- and ZnO-based nanocomposites were synthesized by a continuous two-step gas phase transport process with a pre-deposited Au catalyst at different synthetic temperatures. The morphology and composition of the TeO2 nanowires showed successive changes with ZnO precursor powder with increasing temperature, going from TeO2 nanowires to TeO2/ZnO nanocomposites. The photoluminescence (PL) spectra of these samples indicated that (1) the as-synthesized TeO2 nanowires have a broad blue emission band at 420 nm as well as green (540 nm), orange (607 nm), and red (723 nm) emissions, and (2) the TeO2/ZnO nanocomposites display not only a narrow violet emission band at 380 nm but also green (510 and 540 nm), orange (607 and 645 nm), and red (723 nm) bands. The optical quality of two different samples, based on the emission intensity ratio (I excitonic/I defect) related to band to band transitions and deep level defects, has a tendency to decrease rapidly with increasing synthesis temperature. Simple control of the synthetic temperature zone between two different oxide composites may cause functional, compositional, and optical changes in the product.

  12. Intersubband optical transition energy in a CdTe/Zn0.2Cd0.8Te/ZnTe core/shell/shell spherical quantum dot with Smorodinsky-Winternitz confinement potential

    Science.gov (United States)

    Christina lily Jasmine, P.; John Peter, A.; Lee, Chang Woo

    2015-05-01

    Electronic and optical properties of a hydrogenic donor impurity in a CdTe/Zn0.2Cd0.8Te/ZnTe core/shell/shell quantum dot are discussed taking into consideration of geometrical confinement effect. The confining potentials on both the sides of the barrier are different and a two parametrical potential of Smorodinsky-Winternitz is considered in this problem. The dielectric mismatch is included in the Hamiltonian. The position dependent effective mass is applied. The electronic properties are studied using variational method and the optical properties are investigated using the density matrix approach. The intersubband optical absorption, the oscillator strength and the radiative life time between ground and the excited states are studied based on the wave functions and the confined energies with and without the impurity with various dot radii. The results show that the absorption wavelength in type-II core and shell semiconducting nanomaterials can be tuned over a wider range of wavelengths by altering their size and the composition.

  13. Core-shell ITO/ZnO/CdS/CdTe nanowire solar cells

    Science.gov (United States)

    Williams, B. L.; Taylor, A. A.; Mendis, B. G.; Phillips, L.; Bowen, L.; Major, J. D.; Durose, K.

    2014-02-01

    Radial p-n junction nanowire (NW) solar cells with high densities of CdTe NWs coated with indium tin oxide (ITO)/ZnO/CdS triple shells were grown with excellent heterointerfaces. The optical reflectance of the devices was lower than for equivalent planar films by a factor of 100. The best efficiency for the NW solar cells was η = 2.49%, with current transport being dominated by recombination, and the conversion efficiencies being limited by a back contact barrier (ϕB = 0.52 eV) and low shunt resistances (RSH < 500 Ω.cm2).

  14. Effect of Substrate Temperature on Structural and Morphological Parameters Of ZnTe Thin Films

    Directory of Open Access Journals (Sweden)

    K.D. Patel

    2011-01-01

    Full Text Available Vacuum evaporated thin films of Zinc Telluride (ZnTe of 5000 Å thickness have been deposited on glass substrates at different substrate temperatures (303 K, 373 K, 448 K. Structural parameters were obtained using XRD analysis. Atomic Force Microscope (AFM in non-contact mode has been used to study the surface morphological properties of the deposited thin films. The results obtained from structural and surface morphological studies have been correlated and it is found that the films deposited at higher substrate temperatures possess increasingly good crystallinity and smoother surfaces.

  15. CdZnTe position-sensitive drift detectors with thicknesses up to 5 cm

    Science.gov (United States)

    Bolotnikov, A. E.; Camarda, G. S.; Chen, E.; Cheng, S.; Cui, Y.; Gul, R.; Gallagher, R.; Dedic, V.; De Geronimo, G.; Ocampo Giraldo, L.; Fried, J.; Hossain, A.; MacKenzie, J. M.; Sellin, P.; Taherion, S.; Vernon, E.; Yang, G.; El-hanany, U.; James, R. B.

    2016-02-01

    We investigated the feasibility of long-drift-time CdZnTe (CZT) gamma-ray detectors, fabricated from CZT material produced by Redlen Technologies. CZT crystals with cross-section areas of 5 × 5 mm2 and 6 × 6 mm2 and thicknesses of 20-, 30-, 40-, and 50-mm were configured as 3D position-sensitive drift detectors and were read out using a front-end ASIC. By correcting the electron charge losses caused by defects in the crystals, we demonstrated high performance for relatively thick detectors fabricated from unselected CZT material.

  16. CdZnTe position-sensitive drift detectors with thicknesses up to 5 cm

    OpenAIRE

    Bolotnikov, AE; Camarda, GS; Chen, E.; Cheng, S.; Cui, Y.; Gul, R; Gallagher, R; Dedic, V.; De Geronimo, G.; Giraldo, LO; Fried, J.; Hossain, A; MacKenzie, JM; Sellin, P.; Taherion, S

    2016-01-01

    We investigated the feasibility of long-drift-time CdZnTe (CZT) gamma-ray detectors, fabricated from CZT material produced by Redlen Technologies. CZT crystals with cross-section areas of 5 5 mm2 and 6 6 mm2 and thicknesses of 20-, 30-, 40-, and 50-mm were configured as 3D position-sensitive drift detectors and were read out using a front-end ASIC. By correcting the electron charge losses caused by defects in the crystals, we demonstrated high performance for relatively thick detectors fabric...

  17. Electrophysical and structural properties of n-ZnS/p-CdTe heterojunctions

    Directory of Open Access Journals (Sweden)

    V.V. Kosyak

    2009-01-01

    Full Text Available Electrophysical and structural properties of ZnS/CdTe film heterojunctions obtained by the sublimation method in quasi-closed volume at different growth conditions have been studied in this work. As a result, the ideality factors, saturation currents, potential barriers and the charge-transport mechanisms of these heterostructures are found. Structural investigations allowed to determine the texture type of the films, their phase composition, the lattice parameters, and the dependence of these parameters on the growth conditions as well. Shown, that on the interface of heterosystems obtained at the substrate temperatures Ts > 773 К the solid solutions with certain chemical composition are formed.

  18. Stable core/shell CdTe/Mn-CdS quantum dots sensitized three-dimensional, macroporous ZnO nanosheet photoelectrode and their photoelectrochemical properties.

    Science.gov (United States)

    Li, Weili; Sheng, Pengtao; Feng, Hongyan; Yin, Xuehua; Zhu, Xuewei; Yang, Xu; Cai, Qingyun

    2014-08-13

    A novel photoelectrode based on ZnS/CdTe/Mn-CdS/ZnS-sensitized three-dimensional macroporous ZnO nanosheet (NS) has been prepared by electrodeposition and successive ion layer adsorption and reaction (SILAR) method. The photoelectrode performances were significantly improved through the coupling of the core/shell CdTe/Mn-CdS quantum dots (QDs) with ZnO NS, and the introduction of the ZnS layer as a potential barrier. The photocurrent density systematically increases from ZnO NS (0.45 mA/cm(2)), CdTe/Mn-CdS/ZnO NS (4.98 mA/cm(2)), to ZnS/CdTe/Mn-CdS/ZnS/ZnO (6.23 mA/cm(2)) under the irradiation of AM 1.5G simulated sunlight. More important, the ZnS/CdTe/Mn-CdS/ZnS-sensitized ZnO NS photoelectrode provides a remarkable photoelectrochemical cell efficiency of 4.20% at -0.39 V vs Ag/AgCl.

  19. Electronic Structure and Photoelectric Properties of ZnTe under High Pressure%高压下 ZnTe 的电子结构和光电性质

    Institute of Scientific and Technical Information of China (English)

    胡永金; 何开华

    2014-01-01

    The electrons structure and photoelectric properties of zinc-blende structural ZnTe were in-vestigated under high pressure,using first-principles plane-wave pseudo-potential method.The dielec-tric function and optical absorption coefficient were also predicted under high pressure.The results show that the distributions of density of states of Te and Zn atoms under high pressure shift towards lower energy direction and cover wider range.High pressure leads to stronger hybridization between Te 5p and Zn 3d electrons.The direct band gap increases gradually with pressure while the indirect band gap decreases.The direct band gap structure becomes an indirect one when the ambient pressure reaches 10.7 GPa.High pressure helps the transitions between Te 5p and Zn 3d electrons.The optical absorption coefficient increases,which leads to more electron-hole pairs and enhances the conductivity.%应用第一性原理平面波赝势计算方法,研究了闪锌矿 ZnTe 晶体在外界压力下的电子结构和光电性质,并计算了介电函数和光学吸收系数随压力的变化情况。结果表明:在高压作用下,Te 原子和 Zn 原子的态密度分布都向低能量方向移动,分布范围增大,Te 5p 和 Zn 3d电子轨道杂化变强。随着压力的增大,直接带隙逐渐增大,而间接带隙逐渐变小。当压力为10.7 GPa 时,能带结构从直接带隙转变为间接带隙结构。压力增大,有利于 Te 5p 与 Zn 3d电子间的跃迁,光吸收系数增大,产生更多的电子-空穴对,材料导电能力增强。

  20. Structural, electronic and thermodynamic properties of R{sub 3}ZnH{sub 5} (R=K, Rb, Cs): A first-principle calculation

    Energy Technology Data Exchange (ETDEWEB)

    Li, Jia; Zhang, Shengli [Division of Molecule and Materials Simulation, State Key Laboratory of Organic-Inorganic Composites, Beijing University of Chemical Technology, Beijing 100029 (China); Huang, Shiping, E-mail: huangsp@mail.buct.edu.cn [Division of Molecule and Materials Simulation, State Key Laboratory of Organic-Inorganic Composites, Beijing University of Chemical Technology, Beijing 100029 (China); Wang, Peng; Tian, Huiping [Research Institute of Petroleum Processing, SINOPEC , Beijing 100083 (China)

    2013-02-15

    R{sub 3}ZnH{sub 5} (R=K, Rb, Cs) series have been investigated with respect to the crystal structure, electronic and thermodynamic properties using first-principle methods based on density functional theory with generalized gradient approximation. The optimized structures and atomic coordinates are in good agreement with the experimental data. The strong covalent interactions are obtained between Zn and H atoms in the 18-electron [ZnH{sub 4}]{sup 2-} complex, while an ionic interaction is found between [ZnH{sub 4}]{sup 2-} and R atom. The formation enthalpies show that the formations of R{sub 3}ZnH{sub 5} hydrides are all exothermic at 298 K. The vibration free energies of R{sub 3}ZnH{sub 5} show that the thermodynamic stabilities of R{sub 3}ZnH{sub 5} hydrides decrease with the increasing diameter of R atom. Two possible decomposition reactions of R{sub 3}ZnH{sub 5} series have been suggested in our work. One (reaction one) is that R{sub 3}ZnH{sub 5} hydrides decomposes to elements directly, and the other (reaction two) is that R{sub 3}ZnH{sub 5} hydrides decomposes to RH hydride. The results show that the first decomposition reaction is more favorable one. The spontaneous decomposition reaction of K{sub 3}ZnH{sub 5} hydrides occur upon 465 K via reaction one, and 564 K via reaction two, respectively. - Graphical abstract: Total charge density of K{sub 3}ZnH{sub 5}. Highlights: Black-Right-Pointing-Pointer Electronic and thermodynamic properties of R{sub 3}ZnH{sub 5} (R=K, Rb, Cs) were calculated. Black-Right-Pointing-Pointer The formations of R{sub 3}ZnH{sub 5} hydrides are all exothermic at 298 K. Black-Right-Pointing-Pointer The thermodynamic stabilities decrease with the increasing diameter of R atom. Black-Right-Pointing-Pointer Two possible decomposition pathways of R{sub 3}ZnH{sub 5} were investigated.

  1. (CdTe)0.05(ZnSe)0.95 solid solution application in carbon monoxide diagnostics

    Science.gov (United States)

    Podgornyi, S. O.; Podgornaya, O. T.; Demeshko, I. P.; Lukoyanova, O. V.; Muromtsev, I. V.

    2017-08-01

    The research centered on (CdTe)0.05(ZnSe)0.95 solid solutions. The article is aimed at developing innovative primary transducer material for semi-conductor sensors, investigating their surface physicochemical properties and evaluation their applicability in carbon monoxide diagnostics. Powders and nanofilms of (CdTe)0.05(ZnSe)0.95 solid solutions were obtained by isothermal diffusion and discrete thermal evaporation in vacuum. (CdTe)0.05(ZnSe)0.95 applicability in gas analysis was investigated. Adsorption properties of the given material for carbon oxide (II) were studied by the piezoquartz microweighing, volumetrically and IR spectroscopy of multiple disturbed complete internal reflections. The principles of adsorption, depending on the process conditions, were established. Based on the obtained experimental data, CO micro-impurities sensors were developed, the laboratory tests passed successfully.

  2. HAND-HELD GAMMA-RAY SPECTROMETER BASED ON HIGH-EFFICIENCY FRISCH-RING CdZnTe DETECTORS.

    Energy Technology Data Exchange (ETDEWEB)

    CUI,Y.

    2007-05-01

    Frisch-ring CdZnTe detectors have demonstrated good energy resolution, el% FWHM at 662 keV, and good efficiency for detecting gamma rays. This technique facilitates the application of CdZnTe materials for high efficiency gamma-ray detection. A hand-held gamma-ray spectrometer based on Frisch-ring detectors is being designed at Brookhaven National Laboratory. It employs an 8x8 CdZnTe detector array to achieve a high volume of 19.2 cm3, so that detection efficiency is significantly improved. By using the front-end ASICs developed at BNL, this spectrometer has a small profile and high energy resolution. The spectrometer includes signal processing circuit, digitization and storage circuit, high-voltage module, and USB interface. In this paper, we introduce the details of the system structure and report our test results with it.

  3. Thermal Stability and Structure of Glass Systems of TeO2-ZnO%TeO2-ZnO玻璃的结构与热稳定性

    Institute of Scientific and Technical Information of China (English)

    陈东丹; 陈炳炎; 刘粤惠; 邓再德; 戴世勋; 姜中宏

    2004-01-01

    通过DSC,红外光谱(FTIR)和X射线衍射(XRD)分析,研究了TeO2-ZnO碲酸盐玻璃的组分和结构对其热力学稳定性的影响.结果表明,玻璃的热力学稳定性与ZnO 引起玻璃的结构发生变化密切相关.

  4. Characterization of Electronic Materials HgZnSe and HgZnTe Using Innovative and Conventional Techniques

    Science.gov (United States)

    Tanton, George; Kesmodel, Roy; Burden, Judy; Su, Ching-Hua; Cobb, Sharon D.; Lehoczky, S. L.

    2000-01-01

    HgZnSe and HgZnTe are electronic materials of interest for potential IR detector and focal plane array applications due to their improved strength and compositional stability over HgCdTe, but they are difficult to grow on Earth and to fully characterize. Conventional contact methods of characterization, such as Hall and van der Paw, although adequate for many situations are typically labor intensive and not entirely suitable where only very small samples are available. To adequately characterize and compare properties of electronic materials grown in low earth orbit with those grown on Earth, innovative techniques are needed that complement existing methods. This paper describes the implementation and test results of a unique non-contact method of characterizing uniformity, mobility, and carrier concentration together with results from conventional methods applied to HgZnSe and HgZnTe. The innovative method has advantages over conventional contact methods since it circumvents problems of possible contamination from alloying electrical contacts to a sample and also has the capability to map a sample. Non- destructive mapping, the determination of the carrier concentration and mobility at each place on a sample, provides a means to quantitatively compare, at high spatial resolution, effects of microgravity on electronic properties and uniformity of electronic materials grown in low-Earth orbit with Earth grown materials. The mapping technique described here uses a 1mm diameter polarized beam of radiation to probe the sample. Activation of a magnetic field, in which the sample is placed, causes the plane of polarization of the probe beam to rotate. This Faraday rotation is a function of the free carrier concentration and the band parameters of the material. Maps of carrier concentration, mobility, and transmission generated from measurements of the Faraday rotation angles over the temperature range from 300K to 77K will be presented. New information on band parameters

  5. Deposition of CdS, CdS/ZnSe and CdS/ZnSe/ZnS shells around CdSeTe alloyed core quantum dots: effects on optical properties.

    Science.gov (United States)

    Adegoke, Oluwasesan; Nyokong, Tebello; Forbes, Patricia B C

    2016-05-01

    In this work, we synthesized water-soluble L-cysteine-capped alloyed CdSeTe core quantum dots (QDs) and investigated the structural and optical properties of deposition of each of CdS, CdS/ZnSe and CdS/ZnSe/ZnS shell layers. Photophysical results showed that the overcoating of a CdS shell around the alloyed CdSeTe core [quantum yield (QY) = 8.4%] resulted in effective confinement of the radiative exciton with an improved QY value of 93.5%. Subsequent deposition of a ZnSe shell around the CdSeTe/CdS surface decreased the QY value to 24.7%, but an increase in the QY value of up to 49.5% was observed when a ZnS shell was overcoated around the CdSeTe/CdS/ZnSe surface. QDs with shell layers showed improved stability relative to the core. Data obtained from time-resolved fluorescence measurements provided useful insight into variations in the photophysical properties of the QDs upon the formation of each shell layer. Our study suggests that the formation of CdSeTe/CdS core/shell QDs meets the requirements of quality QDs in terms of high photoluminescence QY and stability, hence further deposition of additional shells are not necessary in improving the optical properties of the core/shell QDs. Copyright © 2015 John Wiley & Sons, Ltd.

  6. Structural, electronic, linear, and nonlinear optical properties of ZnCdTe{sub 2} chalcopyrite

    Energy Technology Data Exchange (ETDEWEB)

    Ouahrani, Tarik [Laboratoire de Physique Theorique, Universite de Tlemcen, B.P. 230, Tlemcen 13000 (Algeria); Reshak, Ali H. [Institute of Physical Biology, South Bohemia University, Nove Hrady 37333 (Czech Republic); School of Microelectronic Engineering, University of Malaysia Perlis (UniMAP), Block A, Kompleks Pusat Pengajian, 02600 Arau Jejawi, Perlis (Malaysia); Khenata, R. [Laboratoire de Physique Quantique et de Modelisation Mathematique, Universite de Mascara, Mascara 29000 (Algeria); Department of Physics and Astronomy, Faculty of Science, King Saud University, P.O. Box 2455, Riyadh 11451 (Saudi Arabia); Baltache, H.; Amrani, B. [Laboratoire de Physique Quantique et de Modelisation Mathematique, Universite de Mascara, Mascara 29000 (Algeria); Bouhemadou, A. [Department of Physics and Astronomy, Faculty of Science, King Saud University, P.O. Box 2455, Riyadh 11451 (Saudi Arabia); Faculty of Sciences, Department of Physics, University of Setif, Setif 19000 (Algeria)

    2011-03-15

    We report results of first-principles density functional calculations using the full-potential linearized augmented plane wave method. The generalized gradient approximation (GGA) and the Engel-Vosko-GGA (EV-GGA) formalism were used for the exchange-correlation energy to calculate the structural, electronic, linear, and nonlinear optical properties of the chalcopyrite ZnCdTe{sub 2} compound. The valence band maximum and the conduction band minimum are located at the {gamma}-point, resulting in a direct band gap of about 0.71 eV for GGA and 1.29 eV for EV-GGA. The results of bulk properties, such as lattice parameters (a, c, and u), bulk modulus B, and its pressure derivative B' are evaluated. The optical properties of this compound, namely the real and the imaginary parts of the dielectric function, reflectivity, and refractive index, show a considerable anisotropy as a consequence ZnCdTe{sub 2} posseses a strong birefringence. In addition, the extinction coefficient, the electron energy loss function, and the nonlinear susceptibility are calculated and their spectra are analyzed. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  7. Mixed carriers thermoelectric effect of vanadium doped ZnTe thin films

    Directory of Open Access Journals (Sweden)

    M. S. Hossain

    2016-05-01

    Full Text Available Vanadium doped zinc telluride (ZnTe:V thin films (containing 2.5 to 10wt% V were deposited onto glass substrates by e-beam evaporation technique in vacuum at a pressure of 8×10-4 Pa. Thermoelectric power of these films have been measured from room temperature up to 413 K with reference to pure copper material. The deposition rate of the films was maintained at 2.05 nms-1 . The composition and temperature dependence thermopower and its related parameters have been studied in detail for a particular thickness of 150 nm. The Fermi levels were determined using a non-degenerate semiconducting model. The carrier scattering index, activation energy and temperature coefficient of activation energy have all been obtained at different ranges of compositions and temperatures. The results of thermopower of ZnTe:V thin films obey an activated conduction mechanism and also suggest that the simultaneous bipolar conduction of both (n- and p-types carriers (mixed carriers take place. All these samples are optically transparent and mixed crystalline in structure

  8. Characterisation of vapour grown CdZnTe crystals using synchrotron X-ray topography

    Science.gov (United States)

    Egan, Christopher K.; Choubey, Ashutosh; Moore, Moreton; Cernik, Robert J.

    2012-03-01

    Synchrotron white beam X-ray topography has been used to characterise bulk crystal defects of thick vapour grown CdZnTe crystals. Whole 50 mm diameter wafers with thicknesses in the range of 2-3 mm were sliced from boules grown by the multi-tube physical vapour transport method and analysed by diffraction topography in a transmission geometry. A variety of defects were observed including cracks, voids and grain boundaries. The largest quantity of defects observed were sub-grains appearing as localised increased intensity in the topographs. The periphery of the wafers showed the highest number of defects, whereas central regions where largely defect-free. We failed to observe any inclusions or precipitates within these crystals. Surface damage from wire-saw cutting was also observed on poorly processed wafers; these defects were otherwise invisible to standard characterisation methods. X-ray topography has proven to be a useful tool for non-destructively investigating bulk extended defects in CdZnTe crystals for radiation detector applications.

  9. Analysis of trapping and de-trapping in CdZnTe detectors by Pockels effect

    Science.gov (United States)

    Rejhon, M.; Franc, J.; Dědič, V.; Kunc, J.; Grill, R.

    2016-09-01

    In this contribution we introduce a method of deep level spectroscopy in semi-insulating semiconductors demonstrated on detector-grade bulk CdZnTe. The method is based on the measurements of temporal and temperature evolution of the electric field profile in studied samples, which is very sensitive to a change of occupancy of deep levels. The measurement of the electric field is based on the linear electro-optic (Pockels) effect using the InGaAs avalanche photodiode with fast response. The internal electric field profile in studied samples significantly changes under various external conditions represented by the application of the bias and pulsed illumination with below-bandgap light. From the knowledge of the electric field behavior and using a standard analysis based on thermally induced transitions of electrons and holes from the deep levels to the conduction and valence bands, respectively, it is possible to get activation energies of the energy levels, their types (donor or acceptor) and corresponding capture cross-sections. By this method we have found deep levels responsible for the polarization of CdZnTe detector under high photon-fluxes. Identified deep levels {{E}\\text{v}}+0.41 eV, {{E}\\text{v}}+0.77 eV and {{E}\\text{v}}+0.94 eV can capture the photo-generated holes and thus form a positive space charge, which is responsible for polarization of the detector.

  10. Structural and optical properties of alloyed quaternary CdSeTeS core and CdSeTeS/ZnS core–shell quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Adegoke, Oluwasesan, E-mail: adegoke.sesan@mailbox.co.za [Department of Chemistry, Faculty of Natural and Agricultural Sciences, University of Pretoria, Lynnwood Road, Pretoria 0002 (South Africa); Nyokong, Tebello, E-mail: t.nyokong@ru.ac.za [Department of Chemistry, Rhodes University, Grahamstown 6140 (South Africa); Forbes, Patricia B.C., E-mail: patricia.forbes@up.ac.za [Department of Chemistry, Faculty of Natural and Agricultural Sciences, University of Pretoria, Lynnwood Road, Pretoria 0002 (South Africa)

    2015-10-05

    Highlights: • Alloyed quaternary CdSeTeS core quantum dots (QDs) were synthesized. • Passivation was carried out using a ZnS shell. • Quaternary CdSeTeS core exhibited unique optical properties over CdSeTe/ZnS. • CdSeTeS can be employed as a useful alternative to core/shell QDs. - Abstract: Synthesis of fluorescent alloyed quantum dots (QDs) with unique optical properties suitable for a wide array of chemical, physical and biological applications is of research interest. In this work, highly luminescent and photostable alloyed quaternary CdSeTeS core QDs of two different sizes were fabricated via the organometallic hot-injection synthetic route. Characterization of the nanocrystals were performed using TEM, XRD, UV/vis and fluorescence spectrophotometric techniques. We have demonstrated in this work that the well fabricated alloyed quaternary CdSeTeS core QDs possess unique optical properties that are advantageous over conventional core/shell systems. Formation of the CdSeTeS/ZnS core/shell with the desired optical properties comes with a number of challenges, hence the advantages of the quaternary alloyed core over the core/shell QDs are (i) avoidance of the challenging process of determining the proper shell thickness which can provide the desired optical properties in the core/shell system and (ii) avoidance of the lattice-induced mismatch between the core and the shell material which can either lead to incomplete exciton confinement or dislocation at the core/shell interface.

  11. Intensifying process of polarization effect within pixellated CdZnTe detectors for X-ray imaging

    Institute of Scientific and Technical Information of China (English)

    Xi Wang; Shali Xiao; Miao Li; Liuqiang Zhang; Yulin Cao; Yuxiao Chen

    2011-01-01

    The intensifying process of polarization effect at room temperature in a pixellated Cadmium zinc telluride (CdZnTe) monolithic detector is studied.The process is attributed to the increase in build up space charges in the CdZnTe crystal,which causes an expansion of the space charge region under the irradiated area.The simulations of electric potential distributions indicate that the distorted electric potential due to the high X-ray flux is significantly changed and even deteriorated due to increasing space charges within the irradiated volume.An agreement between the space charge distribution and electric potential is discussed.

  12. Polycrystalline ZnTe thin film on silicon synthesized by pulsed laser deposition and subsequent pulsed laser melting

    Science.gov (United States)

    Xu, Menglei; Gao, Kun; Wu, Jiada; Cai, Hua; Yuan, Ye; Prucnal, S.; Hübner, R.; Skorupa, W.; Helm, M.; Zhou, Shengqiang

    2016-03-01

    ZnTe thin films on Si substrates have been prepared by pulsed laser deposition and subsequent pulsed laser melting (PLM) treatment. The crystallization during PLM is confirmed by Raman scattering, x-ray diffraction and room temperature photoluminescence (PL) measurements. The PL results show a broad peak at 574 nm (2.16 eV), which can be assigned to the transitions from the conduction band to the acceptor level located at 0.145 eV above the valence band induced by zinc-vacancy ionization. Our work provides an applicable approach to low temperature preparation of crystalline ZnTe thin films.

  13. Water-Soluble Fluorescent CdTe/ZnSe Core/Shell Quantum Dot: Aqueous Phase Synthesis and Cytotoxicity Assays.

    Science.gov (United States)

    Li, Yansheng; Wang, Wenqian; Zhao, Dan; Chen, Peng; Du, Hongwu; Wen, Yongqiang; Zhang, Xueji

    2015-06-01

    In this manuscript, we demonstrate a novel, facile and environmentally friendly method to directly obtain CdTe/ZnSe core/shell QDs in the aqueous phase based on the method of epitaxial growth of ZnSe shells on CdTe cores. The ZnSe shell and the capping reagent glutathione of the CdTe/ZnSe core/shell QDs greatly increased the biocompatibility and stability of the original CdTe cores. The optical property of the as-prepared CZ QDs could be controlled by precisely adjusting the size of CdTe cores, which showed broad emission spectra from 530 to 688 nm. The crystalline structure of the CZ QDs was extensively characterized by XRD, TEM and HRTEM, etc. Furthermore, since there were several functional groups on glutathione molecules, the QDs could be potentially used for connecting other functional small molecules, biomolecules or nanoparticles. Such QDs have bright future perspectives in the development biological and nanomedical fields.

  14. Growth of ZnO nanowires through thermal oxidation of metallic zinc films on CdTe substrates

    Energy Technology Data Exchange (ETDEWEB)

    Martinez, O., E-mail: oscar@fmc.uva.es [Optronlab Group, Dpto. Fisica Materia Condensada, Edificio I-D, Universidad de Valladolid, Paseo de Belen 1, 47011, Valladolid (Spain); Hortelano, V.; Jimenez, J. [Optronlab Group, Dpto. Fisica Materia Condensada, Edificio I-D, Universidad de Valladolid, Paseo de Belen 1, 47011, Valladolid (Spain); Plaza, J.L.; Dios, S. de; Olvera, J.; Dieguez, E. [Laboratorio de Crecimiento de Cristales, Departamento de Fisica de Materiales, Facultad de Ciencias, Universidad Autonoma de Madrid, Cantoblanco, 28049 Madrid (Spain); Fath, R.; Lozano, J.G.; Ben, T.; Gonzalez, D. [Dpto. Ciencia de los Materiales e Ingenieria Metalurgica y Q.I., Facultad de Ciencias, Apdo. 40, 11510 Puerto Real, Cadiz (Spain); Mass, J. [Dpto. de Fisica, Universidad del Norte, Km.5 Via Puerto Colombia, Barranquilla (Colombia)

    2011-04-28

    Research highlights: > ZnO nanowires grown from thermal Zn oxidation. > TEM reveals high quality thin nanowires several microns long. > New phase formation at long oxidation time. > Good spectroscopic properties measured by Raman, Photo and Cathodoluminsecence spectroscopies. - Abstract: <112-bar 0> wurtzite ZnO nanowires (NWs) have been obtained by oxidizing in air at 500 deg. C thermally evaporated Zn metal films deposited onto CdTe substrates. The presence of Cd atoms from the substrate on the ZnO seeding layer and NWs seems to affect the growth of the NWs. The effects of the oxidation time on the structural and optical properties of the NWs are described in detail. It is shown that the NWs density decreases and their length increases when increasing the oxidation time. Thicker Zn layers result in thinner and longer ZnO NWs. Very long oxidation times also lead to the formation of a new CdO phase which is related to the partial destruction and quality reduction of the NWs. The possible process for ZnO NW formation on CdTe substrates is discussed.

  15. A new oxytelluride: Perovskite and CsCl intergrowth in Ba{sub 3}Yb{sub 2}O{sub 5}Te

    Energy Technology Data Exchange (ETDEWEB)

    Whalen, J.B., E-mail: icatchsnook@yahoo.com [The National High Magnetic Field Laboratory, Condensed Matter Science Department, 1800 E. Paul Dirac Drive, Tallahassee, FL 32310 (United States); Specialized Crystal Processing, Inc., 400 Capital Circle SE, Suite 18227, Tallahassee, FL 32301-3839 (United States); Besara, T. [The National High Magnetic Field Laboratory, Condensed Matter Science Department, 1800 E. Paul Dirac Drive, Tallahassee, FL 32310 (United States); The Florida Agricultural and Mechanical University-The Florida State University (FAMU-FSU) College of Engineering, Department of Chemical and Biomedical Engineering, 2525 Pottsdamer Street, Tallahassee, FL 32310-6046 (United States); Vasquez, R.; Herrera, F. [The Florida Agricultural and Mechanical University-The Florida State University (FAMU-FSU) College of Engineering, Department of Chemical and Biomedical Engineering, 2525 Pottsdamer Street, Tallahassee, FL 32310-6046 (United States); Sun, J. [The National High Magnetic Field Laboratory, Condensed Matter Science Department, 1800 E. Paul Dirac Drive, Tallahassee, FL 32310 (United States); The Florida Agricultural and Mechanical University-The Florida State University (FAMU-FSU) College of Engineering, Department of Chemical and Biomedical Engineering, 2525 Pottsdamer Street, Tallahassee, FL 32310-6046 (United States); Ramirez, D. [The National High Magnetic Field Laboratory, Condensed Matter Science Department, 1800 E. Paul Dirac Drive, Tallahassee, FL 32310 (United States); The Florida Agricultural and Mechanical University-The Florida State University (FAMU-FSU) College of Engineering, Department of Chemical and Biomedical Engineering, 2525 Pottsdamer Street, Tallahassee, FL 32310-6046 (United States); Specialized Crystal Processing, Inc., 400 Capital Circle SE, Suite 18227, Tallahassee, FL 32301-3839 (United States); Stillwell, R.L. [The National High Magnetic Field Laboratory, Condensed Matter Science Department, 1800 E. Paul Dirac Drive, Tallahassee, FL 32310 (United States); and others

    2013-07-15

    The new oxytelluride Ba{sub 3}Yb{sub 2}O{sub 5}Te was obtained from an alkaline earth flux. Ba{sub 3}Yb{sub 2}O{sub 5}Te crystallizes in the tetragonal space group P4/mmm (#123), with a=4.3615(3) Å and c=11.7596(11) Å, Z=1. The structure combines two distinct building blocks, a Ba{sub 2}Yb{sub 2}O{sub 5} perovskite-like double layer with square bipyramidal coordination of the ytterbium ions, and a CsCl-type BaTe layer. Short range magnetic order is apparent at below 5 K, with the magnetic behavior above this temperature dominated by crystal field effects. The structure may be considered as an analog to the Ruddlesden–Popper phases, where the NaCl-type layer has been replaced by the CsCl-type layer. The two-dimensional magnetic behavior is expected based on the highly anisotropic nature of the structure. - Graphical abstract: Optical images of Ba{sub 3}Yb{sub 2}O{sub 5}Te in transmission (left) and reflected (right) light, with atomic unit cell overlay. - Highlights: • Single crystal synthesis and characterization of a new phase, Ba{sub 3}Yb{sub 2}O{sub 5}Te. • The structure features the BaTe high pressure polymorph intergrowth. • Magnetic susceptibility measurements show short range 2 dimensional ordering. • Heat capacity measurements show a feature at the magnetic ordering temperature. • Optical reflectivity measurements show a {sup 2}F{sub 7/2}→{sup 2}F{sub 5/2} absorption at 976 nm.

  16. Recent Results on Growth of (211)B CdTe on (211)Si with Intermediate Ge and ZnTe Buffer Layers by Metalorganic Vapor-Phase Epitaxy

    Science.gov (United States)

    Shintri, Shashidhar; Rao, Sunil; Wijewarnasuriya, Priyalal; Trivedi, Sudhir; Bhat, Ishwara

    2012-10-01

    We report on the investigation of epitaxial cadmium telluride grown by metalorganic vapor-phase epitaxy (MOVPE) on (211)Si, with particular emphasis on studying the effect of changing the reactor parameters and thermal annealing conditions on the epilayer quality. The CdTe films were characterized by scanning electron microscopy (SEM), atomic force microscopy (AFM), and x-ray diffraction (XRD). The best CdTe films were observed when the Te/Cd precursor partial pressure ratio was close to 3.1. It was also observed that, though annealing improved the crystal quality, a slight increase in surface roughness was observed. Similar attempts were made to improve the growth conditions of ZnTe intermediate buffer layer, which showed similar trends with changes in precursor flows.

  17. Structural and optical properties of electron-beam-evaporated ZnSe{sub 1-x}Te{sub x} ternary compounds with various Te contents

    Energy Technology Data Exchange (ETDEWEB)

    Suthagar, J. [Karunya University, Coimbatore (India); Kissinger, N. J. [Jubail University College, Royal Commission for Jubail, Jubail Industrial City (Saudi Arabia); Nath, G. M. [Stella Mary' s College of Engineering, Nagercoil (India); Perumal, K. [SNMV College of Arts and Sciences, Coimbatore (India)

    2014-01-15

    ZnSe{sub 1-x}Te{sub x} films with different tellurium (Te) contents were deposited by using an electron beam (EB) evaporation technique onto glass substrates for applications to optoelectronic devices. The structural and the optical properties of the ZnSe{sub 1-x}Te{sub x} films were studied in the present work. The host material ZnSe{sub 1-x}Te{sub x}, were prepared by using the physical vapor deposition method of the electron beam evaporation technique (PVD: EBE) under a pressure of 1 x 10{sup -5} mbar. The X-ray diffractogram indicated that these alloy films had cubic structure with a strong preferential orientation of the crystallites along the (1 1 1) direction. The optical properties showed that the band gap (E{sub g}) values varied from 2.73 to 2.41 eV as the tellurium content varied from 0.2 to 0.8. Thus the material properties can be altered and excellently controlled by controlling the system composition x.

  18. Ⅱ-Ⅵ族化合物半導体ITO-ZnSe-CdTe セルの電気特性

    OpenAIRE

    2008-01-01

    In this report, ITO(Indium Tin Oxide) was used on the glass substrates as the transparent electrode, and ZnSe and CdTe layer was prepared by the vacuum deposition on this ITO. Then, the electrical characteristics of this sample were investigated by mans of the electric current transport analysis. The ZnSe-CdTe sample that CdTe layer is prepared on ITO-ZnSe(0.1μm) substrate has not high-density level at the junction surface, and the CdTe layer with little lattice imperfection can be prepared. ...

  19. Tandem Solar Cells from Solution-Processed CdTe and PbS Quantum Dots Using a ZnTe–ZnO Tunnel Junction

    Energy Technology Data Exchange (ETDEWEB)

    Crisp, Ryan W.; Pach, Gregory F.; Kurley, J. Matthew; France, Ryan M.; Reese, Matthew O.; Nanayakkara, Sanjini U.; MacLeod, Bradley A.; Talapin, Dmitri V.; Beard, Matthew C.; Luther, Joseph M.

    2017-01-10

    We developed a monolithic CdTe-PbS tandem solar cell architecture in which both the CdTe and PbS absorber layers are solution-processed from nanocrystal inks. Due to their tunable nature, PbS quantum dots (QDs), with a controllable band gap between 0.4 and ~1.6 eV, are a promising candidate for a bottom absorber layer in tandem photovoltaics. In the detailed balance limit, the ideal configuration of a CdTe (Eg = 1.5 eV)-PbS tandem structure assumes infinite thickness of the absorber layers and requires the PbS band gap to be 0.75 eV to theoretically achieve a power conversion efficiency (PCE) of 45%. However, modeling shows that by allowing the thickness of the CdTe layer to vary, a tandem with efficiency over 40% is achievable using bottom cell band gaps ranging from 0.68 and 1.16 eV. In a first step toward developing this technology, we explore CdTe-PbS tandem devices by developing a ZnTe-ZnO tunnel junction, which appropriately combines the two subcells in series. We examine the basic characteristics of the solar cells as a function of layer thickness and bottom-cell band gap and demonstrate open-circuit voltages in excess of 1.1 V with matched short circuit current density of 10 mA/cm2 in prototype devices.

  20. Characterization of HgCdTe Films Grown on Large-Area CdZnTe Substrates by Molecular Beam Epitaxy

    Science.gov (United States)

    Arkun, F. Erdem; Edwall, Dennis D.; Ellsworth, Jon; Douglas, Sheri; Zandian, Majid; Carmody, Michael

    2017-09-01

    Recent advances in growth of Hg1- x Cd x Te films on large-area (7 cm × 7.5 cm) CdZnTe (CZT) substrates is presented. Growth of Hg1- x Cd x Te with good uniformity on large-area wafers is achieved using a Riber 412 molecular beam epitaxy (MBE) tool designed for growth of Hg1- x Cd x Te compounds. The reactor is equipped with conventional CdTe, Te, and Hg sources for achieving uniform exposure of the wafer during growth. The composition of the Hg1- x Cd x Te compound is controlled in situ by employing a closed-loop spectral ellipsometry technique to achieve a cutoff wavelength ( λ co) of 14 μm at 78 K. We present data on the thickness and composition uniformity of films grown for large-format focal-plane array applications. The composition and thickness nonuniformity are determined to be maps show the spatial distribution of defects generated during the epitaxial growth of the Hg1- x Cd x Te films. Microdefect densities are in the low 103 cm-2 range, and void defects are below 500 cm-2. Dislocation densities less than 5 × 105 cm-2 are routinely achieved for Hg1- x Cd x Te films grown on CZT substrates. HgCdTe 4k × 4k focal-plane arrays with 15 μm pitch for astronomical wide-area infrared imagers have been produced using the recently developed MBE growth process at Teledyne Imaging Sensors.

  1. Single-color, in situ photolithography marking of individual CdTe/ZnTe quantum dots containing a single Mn{sup 2+} ion

    Energy Technology Data Exchange (ETDEWEB)

    Sawicki, K.; Malinowski, F. K.; Gałkowski, K.; Jakubczyk, T.; Kossacki, P.; Pacuski, W.; Suffczyński, J., E-mail: Jan.Suffczynski@fuw.edu.pl [Institute of Experimental Physics, Faculty of Physics, University of Warsaw, Pasteura 5 St., PL-02-093 Warsaw (Poland)

    2015-01-05

    A simple, single-color method for permanent marking of the position of individual self-assembled semiconductor Quantum Dots (QDs) at cryogenic temperatures is reported. The method combines in situ photolithography with standard micro-photoluminescence spectroscopy. Its utility is proven by a systematic magnetooptical study of a single CdTe/ZnTe QD containing a Mn{sup 2+} ion, where a magnetic field of up to 10 T in two orthogonal, Faraday and Voigt, configurations is applied to the same QD. The presented approach can be applied to a wide range of solid state nanoemitters.

  2. CdZnTe- and TlBr-detectors response simulation for registration of the mixed beta- and gamma-radiation

    Directory of Open Access Journals (Sweden)

    Skrypnyk A. I.

    2015-02-01

    Full Text Available One of the approaches for reconstructing the spectra of the mixed beta- and gamma-radiation, produced by wide band-gap semiconductor detectors, and the subsequent identification of radionuclides that are comprised in the mixture composition is a method based on various methods of spectral deconvolution. The presence of the detector response functions for each individual source of radiation is a key point in the studying such techniques. The response of TlBr- and CdZnTe-detectors to gamma-rays from 90Sr and 137Cs was simulated by Monte-Carlo method via Geant4 package. The computer experiments were conducted with using a β-filter and without it. It was shown that optimal thickness of the Al β-filter required for complete suppressing the conversion electrons in the 137Cs spectrum is 0.5 mm. The modification of 661.7 keV photopeaks with a using β-filter was investigated.

  3. Study of CdTe:Cl and CdZnTe detectors for medical multi-slices X-ray Computed Tomography; Etude de detecteurs en CdTe:Cl et CdZnTe pour la tomographie X medicale multicoupes

    Energy Technology Data Exchange (ETDEWEB)

    Ricq, St

    1999-09-28

    The application of CdTe and CdZnTe detectors to medical X-ray Computed Tomography have been investigated. Different electrodes (Au, Pt, In) have been deposited on CdZnTe HPBM and on CdTe:ClTHM. Their injection properties have been determined with Current-Voltage characteristics. Under X-ray in CT conditions, injection currents measurements reveal trapped carriers space-charges formation. The same way, the comparisons of the responses to X-beam cut-off with various injection possibilities enable to follow the space-charges evolutions and then to determine the predominant traps types. Nevertheless, both hole and electron traps are responsible for the memory effect e.g. the currents levels dependence with irradiation history. This effect is noticed in particular on responses to fast flux variations that simulate scanner's conditions. Trap levels probably corresponding to native defects are responsible for these limitations. In order to make such detectors suitable for X-ray Computed Tomography, significant progresses in CdTe for CdZnTe crystal growth with an important defects densities reduction (factor 10), or possibly counting mode operation, seem necessary. (author)

  4. Structural stability, electronic, magnetic and optical properties of zincblende Zn0.5V0.5Te under pressure

    Science.gov (United States)

    Yin, Zhu-Hua; Zhang, Jian-Min

    2016-10-01

    The structural stability, electronic, magnetic and optical properties of zincblende Zn0.5V0.5Te under pressures 0-5 GPa are investigated by the spin-polarized first-principles calculation. Under pressure, the Zn0.5V0.5Te is always half-metal with the total magnetic moment μtot of 3μB / cell mainly contributed by V2+ ion, but the spin-down channel opens a band gap. The Zn0.5V0.5Te also behaves in a ductile manner and is mechanical stable until 3.78 GPa pressure. The static dielectric function ε1 (0) and refractive index n (0) increase with pressure. The two absorption peaks located in energy regions 0-20 eV and 35-50 eV not only increase but also shift to the higher energy region (blue shift) with pressure. So the electronic and optical properties of Zn0.5V0.5Te could be tuned through external pressure, which is beneficial to the electronic and optical applications.

  5. Infrared LED Enhanced Spectroscopic CdZnTe Detector Working under High Fluxes of X-rays

    Directory of Open Access Journals (Sweden)

    Jakub Pekárek

    2016-09-01

    Full Text Available This paper describes an application of infrared light-induced de-polarization applied on a polarized CdZnTe detector working under high radiation fluxes. We newly demonstrate the influence of a high flux of X-rays and simultaneous 1200-nm LED illumination on the spectroscopic properties of a CdZnTe detector. CdZnTe detectors operating under high radiation fluxes usually suffer from the polarization effect, which occurs due to a screening of the internal electric field by a positive space charge caused by photogenerated holes trapped at a deep level. Polarization results in the degradation of detector charge collection efficiency. We studied the spectroscopic behavior of CdZnTe under various X-ray fluxes ranging between 5 × 10 5 and 8 × 10 6 photons per mm 2 per second. It was observed that polarization occurs at an X-ray flux higher than 3 × 10 6 mm − 2 ·s − 1 . Using simultaneous illumination of the detector by a de-polarizing LED at 1200 nm, it was possible to recover X-ray spectra originally deformed by the polarization effect.

  6. Infrared LED Enhanced Spectroscopic CdZnTe Detector Working under High Fluxes of X-rays.

    Science.gov (United States)

    Pekárek, Jakub; Dědič, Václav; Franc, Jan; Belas, Eduard; Rejhon, Martin; Moravec, Pavel; Touš, Jan; Voltr, Josef

    2016-09-27

    This paper describes an application of infrared light-induced de-polarization applied on a polarized CdZnTe detector working under high radiation fluxes. We newly demonstrate the influence of a high flux of X-rays and simultaneous 1200-nm LED illumination on the spectroscopic properties of a CdZnTe detector. CdZnTe detectors operating under high radiation fluxes usually suffer from the polarization effect, which occurs due to a screening of the internal electric field by a positive space charge caused by photogenerated holes trapped at a deep level. Polarization results in the degradation of detector charge collection efficiency. We studied the spectroscopic behavior of CdZnTe under various X-ray fluxes ranging between 5 × 10 5 and 8 × 10 6 photons per mm 2 per second. It was observed that polarization occurs at an X-ray flux higher than 3 × 10 6 mm - 2 ·s - 1 . Using simultaneous illumination of the detector by a de-polarizing LED at 1200 nm, it was possible to recover X-ray spectra originally deformed by the polarization effect.

  7. Conduction and reversible memory phenomena in Au-nanoparticles-incorporated TeO{sub 2}–ZnO films

    Energy Technology Data Exchange (ETDEWEB)

    Bontempo, L., E-mail: bontempo@usp.br [Laboratório de Sistemas Integráveis, Escola Politécnica da Universidade de São Paulo, Av. Prof. Luciano Gualberto, 158, Travessa 3, 05508-900 São Paulo, SP (Brazil); Laboratório de Materiais Fotônicos e Optoeletrônicos, Faculdade de Tecnologia de São Paulo, Praça Cel. Fernando Prestes, 30, 01124-060 São Paulo, SP (Brazil); Santos Filho, S.G. dos, E-mail: sgsantos@usp.br [Laboratório de Sistemas Integráveis, Escola Politécnica da Universidade de São Paulo, Av. Prof. Luciano Gualberto, 158, Travessa 3, 05508-900 São Paulo, SP (Brazil); Kassab, L.R.P., E-mail: kassablm@osite.com.br [Laboratório de Materiais Fotônicos e Optoeletrônicos, Faculdade de Tecnologia de São Paulo, Praça Cel. Fernando Prestes, 30, 01124-060 São Paulo, SP (Brazil)

    2016-07-29

    A reversible memory behavior in TeO{sub 2}–ZnO thin films containing Au nanoparticles prepared using the sputtering technique has been observed. The current–voltage characteristics of the films, having Al and Si as electrodes, showed a switching behavior starting from an initial state of low conductivity to a high conductivity one. As a result, an abrupt increase of current (10{sup −7} to 10{sup −3} A) was observed for 6.5 V (100 nm thickness). Au nanoparticles provide a larger electron storage capability, and do not favor the transport through the insulator; they present a higher trapped charge concentration, which reduces the leakage current to lower levels. The influence of the Au nanoparticle diameter and volumetric concentration to reach the abrupt current transition and the value of the transition voltage was studied. These parameters were found to play an important role on reversible memory phenomena as they determine the facility/difficulty to fill and saturate the traps (Au nanoparticles) with electrons. - Highlights: • TeO{sub 2}–ZnO thin films with Au nanoparticles grown by magnetron co-sputtering for memory devices • Nucleation of gold nanoparticles by annealing process • Electrical properties of TeO{sub 2}–ZnO thin films with and without gold nanoparticles • Reversible memory phenomenum in Au-nanoparticles-incorporated TeO{sub 2}–ZnO thin films.

  8. Progress in the Development of CdZnTe Unipolar Detectors for Different Anode Geometries and Data Corrections

    Directory of Open Access Journals (Sweden)

    Qiushi Ren

    2013-02-01

    Full Text Available CdZnTe detectors have been under development for the past two decades, providing good stopping power for gamma rays, lightweight camera heads and improved energy resolution. However, the performance of this type of detector is limited primarily by incomplete charge collection problems resulting from charge carriers trapping. This paper is a review of the progress in the development of CdZnTe unipolar detectors with some data correction techniques for improving performance of the detectors. We will first briefly review the relevant theories. Thereafter, two aspects of the techniques for overcoming the hole trapping issue are summarized, including irradiation direction configuration and pulse shape correction methods. CdZnTe detectors of different geometries are discussed in detail, covering the principal of the electrode geometry design, the design and performance characteristics, some detector prototypes development and special correction techniques to improve the energy resolution. Finally, the state of art development of 3-D position sensing and Compton imaging technique are also discussed. Spectroscopic performance of CdZnTe semiconductor detector will be greatly improved even to approach the statistical limit on energy resolution with the combination of some of these techniques.

  9. Charge-Sensitive Front-End Electronics with Operational Amplifiers for CdZnTe Detectors

    CERN Document Server

    Födisch, P; Lange, B; Kirschke, T; Enghardt, W; Kaever, P

    2016-01-01

    Cadmium zinc telluride (CdZnTe, "CZT") radiation detectors are announced to be a game-changing detector technology. However, state-of-the-art detector systems require high-performance readout electronics as well. Even though an application-specific integrated circuit (ASIC) is an adequate solution for the readout, our demands on a high dynamic range for energy measurement and a high throughput are not served by any commercially available circuit. Consequently, we had to develop the analog front-end electronics with operational amplifiers for an 8x8 pixelated CZT detector. For this purpose, we model an electrical equivalent circuit of the CZT detector with the associated charge-sensitive amplifier (CSA). Therefore, we present the mathematical equations for a detailed network analysis. Additionally, we enhance the design with numerical values for various features such as ballistic deficit, charge-to-voltage gain, rise time, noise level and verify the performance with synthetic detector signals. With this benchm...

  10. Pressure-induced phase transition in wurtzite ZnTe: an ab initio study.

    Science.gov (United States)

    Alptekin, Sebahaddin

    2012-03-01

    A constant pressure ab initio MD technique and density functional theory with a generalized gradient approximation (GGA) was used to study the pressure-induced phase transition in wurtzite ZnTe. A first-order phase transition from the wurtzite structure to a Cmcm structure was successfully observed in a constant-pressure molecular dynamics simulation. This phase transformation was also analyzed using enthalpy calculations. We also investigated the stability of wurtzite (WZ) and zinc-blende (ZB) phases from energy-volume calculations, and found that both structures show quite similar equations of state and transform into a Cmcm structure at 16 GPa using enthalpy calculations, in agreement with experimental observations. The transition phase, lattice parameters and bulk properties we obtained are comparable with experimental and theoretical data.

  11. Simulation of the anode structure for capacitive Frisch grid CdZnTe detectors

    Institute of Scientific and Technical Information of China (English)

    MIN Jiahua; SHI Zhubin; QIAN Yongbiao; SANG Wenbin; ZHAO Hengyu; TENG Jianyong; LIU Jishan

    2009-01-01

    CdZnTe (CZT) capacitive Frisch grid detectors can achieve a higher detecting resolution.The anode structure might have an important role in improving the weighting potential distribution of the detectors.In this paper,four anode structures of capacitive Frisch grid structures have been analyzed with FE simulation,based on a 3-dimensional weighting potential analysis.The weighting potential distributions in modified anode devices (Model B,C and D) are optimized compared with a square device (Model A).In model C and D,the abrupt weighting potential can be well modified.However,with increased radius of the circular electrode in Model C the weighting potential platform away from the anode becomes higher and higher and in Model D,the weighting potential does not vary too much.

  12. CdZnTe drift detector with correction for hole trapping

    DEFF Research Database (Denmark)

    van Pamelen, M.A.J.; Budtz-Jørgensen, Carl

    1998-01-01

    The results are presented of a CdZnTe drift detector for which the energy determination can be corrected for hole trapping. The electronic noise and the hole contribution to the signal are reduced and the signals are also corrected for any residual effects of hole trapping. This is achieved...... by using drift strips and an anode strip on one side of the detector crystal in combination with a single planar electrode on the other side. Below 100 keV, the resolution tin FWHM) was electronic noise limited. Using a planar electrode, the peak of Am-241 at 59.6 keV has a width of 14.1 ke...

  13. Electronic properties and charge density of BeZn1−Te alloys

    Indian Academy of Sciences (India)

    C B Swarnkar; U Paliwal; N N Patel; K B Joshi

    2011-06-01

    Electronic band structure calculations are performed for the BeZn1−Te (0 ≤ ≤ 1 in steps of 0.2) alloys following the empirical pseudopotential method. The alloying effects are modelled through the modified virtual crystal approximation. Throughout the composition, valence band maximum resides at the point. The conduction band minimum, however, shifts from to point of symmetry when = 0.27. The observed crossover from direct to indirect bandgap is well in accordance with the experimental observations. Effect of alloying on the density of states is also discussed. The charge density distribution along a few major planes is computed and discussed. The electronic band structure related parameters like bandwidths, bandgaps and ionicity are reported and compared with experimental data wherever available. We also give estimates of cohesive energy and bulk modulus for the alloys.

  14. Analysis of Surface Chemistry and Detector Performance of Chemically Process CdZnTe crystals

    Energy Technology Data Exchange (ETDEWEB)

    HOSSAIN, A.; Yang, G.; Sutton, J.; Zergaw, T.; Babalola, O. S.; Bolotnikov, A. E.; Camarda. ZG. S.; Gul, R.; Roy, U. N., and James, R. B.

    2015-10-05

    The goal is to produce non-conductive smooth surfaces for fabricating low-noise and high-efficiency CdZnTe devices for gamma spectroscopy. Sample preparation and results are discussed. The researachers demonstrated various bulk defects (e.g., dislocations and sub-grain boundaries) and surface defects, and examined their effects on the performance of detectors. A comparison study was made between two chemical etchants to produce non-conductive smooth surfaces. A mixture of bromine and hydrogen peroxide proved more effective than conventional bromine etchant. Both energy resolution and detection efficiency of CZT planar detectors were noticeably increased after processing the detector crystals using improved chemical etchant and processing methods.

  15. Core-shell ITO/ZnO/CdS/CdTe nanowire solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Williams, B. L.; Phillips, L.; Major, J. D.; Durose, K. [Stephenson Institute for Renewable Energy, University of Liverpool, Chadwick Building, Peach St., Liverpool L69 7ZF (United Kingdom); Taylor, A. A.; Mendis, B. G.; Bowen, L. [G. J. Russell Microscopy Facility, University of Durham, South Road, Durham DH1 3LE (United Kingdom)

    2014-02-03

    Radial p-n junction nanowire (NW) solar cells with high densities of CdTe NWs coated with indium tin oxide (ITO)/ZnO/CdS triple shells were grown with excellent heterointerfaces. The optical reflectance of the devices was lower than for equivalent planar films by a factor of 100. The best efficiency for the NW solar cells was η = 2.49%, with current transport being dominated by recombination, and the conversion efficiencies being limited by a back contact barrier (ϕ{sub B} = 0.52 eV) and low shunt resistances (R{sub SH} < 500 Ω·cm{sup 2})

  16. Atomic and Electronic Structures of Cd0.96Zn0.04Te(110) Surface

    Institute of Scientific and Technical Information of China (English)

    ZHA Gang-Qiang; JIE Wan-Qi; ZHANG Wen-Hua; LI Qiang; XU Fa-Qiang

    2005-01-01

    @@ X-Ray diffraction is used to analyse the lattice structure of Cd0.96Zn0.04Te (CZT), and the lattice constant is measured to be 0.647nm. The atomic structure of the clean CZT(110) surface obtained by Ar+ etching in vacuum is observed by low-energy electron diffraction, where no surface reconstruction is discovered. Angleresolved photoemission spectroscopy was used to characterize the surface state of the clean CZT (110) surface,by which we find a 1.5-eV-wide surface band with the peak at 0.9eV below the Fermi energy containing about6.9 × 1014 electrons/cm2, approximately one electron per surface atom.

  17. Structural and Optoelectrical Properties of ZnTe Thin Films Prepared by E-Beam Evaporation

    Science.gov (United States)

    Zia, Rehana; Saleemi, Farhat; Riaz, Madeeha; Nassem, Shahzad

    2016-10-01

    ZnTe thin films have been prepared by an electron-beam evaporation technique on glass substrates, changing the accelerating voltage and the substrate temperature at accelerating voltage of 2 kV. Structural analysis showed that all the films had cubic structure with preferential orientation along (111) direction, though (220) and (311) orientations were also present. The (111) peak intensity increased with increasing film thickness. The crystallite size increased with increasing film thickness. Conductivity measurements showed that the films were p-type. Films prepared at accelerating voltage of 2 kV exhibited minimum resistivity. Optical characterization indicated that both absorbing and transparent thin films can be achieved by using different deposition conditions. The optical bandgap value was found to vary with substrate temperature.

  18. Charge sharing in common-grid pixelated CdZnTe detectors

    Science.gov (United States)

    Kim, Jae Cheon; Anderson, Stephen E.; Kaye, Willy; Zhang, Feng; Zhu, Yuefeng; Kaye, Sonal Joshi; He, Zhong

    2011-10-01

    The charge sharing effect in pixelated CdZnTe (CZT) detectors with a common anode steering grid has been studied. The impact on energy resolution of weighting potential cross-talk and ballistic deficit due to cathode signal shaping has been investigated. A detailed system modeling package considering charge induction, electronic noise, pulse shaping, and ASIC triggering procedures has been developed to study the characteristics of common-grid CZT detectors coupled to the VAS_UM/TAT4 ASIC. Besides an actual common-grid CZT detector coupled to VAS_UM/TAT4 ASIC, a prototype digital read-out system has been developed to better understand the nature of the charge sharing effect.

  19. Charge sharing in common-grid pixelated CdZnTe detectors

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Jae Cheon, E-mail: jaecheon@umich.edu [Department of Nuclear Engineering and Radiological Sciences, University of Michigan, Ann Arbor, MI 48109 (United States); Anderson, Stephen E.; Kaye, Willy; Zhang Feng; Zhu Yuefeng; Kaye, Sonal Joshi; He Zhong [Department of Nuclear Engineering and Radiological Sciences, University of Michigan, Ann Arbor, MI 48109 (United States)

    2011-10-21

    The charge sharing effect in pixelated CdZnTe (CZT) detectors with a common anode steering grid has been studied. The impact on energy resolution of weighting potential cross-talk and ballistic deficit due to cathode signal shaping has been investigated. A detailed system modeling package considering charge induction, electronic noise, pulse shaping, and ASIC triggering procedures has been developed to study the characteristics of common-grid CZT detectors coupled to the VAS{sub U}M/TAT4 ASIC. Besides an actual common-grid CZT detector coupled to VAS{sub U}M/TAT4 ASIC, a prototype digital read-out system has been developed to better understand the nature of the charge sharing effect.

  20. XA readout chip characteristics and CdZnTe spectral measurements

    Energy Technology Data Exchange (ETDEWEB)

    Barbier, L.M.; Birsa, F.; Odom, J. [NASA/Goddard Space Flight Center, Greenbelt, MD (United States)] [and others

    1999-02-01

    The authors report on the performance of a CdZnTe (CZT) array readout by an XA (X-ray imaging chip produced at the AMS foundry) application specific readout chip (ASIC). The array was designed and fabricated at NASA/Goddard Space Flight Center (GSFC) as a prototype for the Burst Arc-Second Imaging and Spectroscopy gamma-ray instrument. The XA ASIC was obtained from Integrated Detector and Electronics (IDE), in Norway. Performance characteristics and spectral data for {sup 241}Am are presented both at room temperature and at {minus}20 C. The measured noise ({sigma}) was 2.5 keV at 60 keV at room temperature. This paper represents a progress report on work with the XA ASIC and CZT detectors. Work is continuing and in particular, larger arrays are planned for future NASA missions.

  1. The crystalline quality distribution in CdZnTe single crystal correlated to the interface shape during growth

    Energy Technology Data Exchange (ETDEWEB)

    Azoulay, M.; Rotter, S.; Gafni, G. (Soreq Nuclear Research Center, Yavne (Israel)); Roth, M. (School of Applied Science and Technology, Hebrew Univ. of Jerusalem (Israel))

    1992-02-01

    Crystalline quality of CdZnTe single crystals grown by the vertical gradient freeze (VGF) method has been evaluated using the double crystal rocking curve (DCRC) analysis and etch pits density (EPD) measurements. The full width at half maximum (HWHM) values of the DCRCs vary within 40% while the EPD values range from 2 to 8 x 10{sup 4} cm{sup -2} along the crystal growth axis. Best results are obtained for the central part of the crystals, where the growth interface exhibits a nearly planar shape. The results obtained have been used for practical implications with regard to the use of CdZnTe crystals as a substrate material for HgCdTe thin films growth. (orig.).

  2. Light absorption processes and optimization of ZnO/CdTe core-shell nanowire arrays for nanostructured solar cells

    Science.gov (United States)

    Michallon, Jérôme; Bucci, Davide; Morand, Alain; Zanuccoli, Mauro; Consonni, Vincent; Kaminski-Cachopo, Anne

    2015-02-01

    The absorption processes of extremely thin absorber solar cells based on ZnO/CdTe core-shell nanowire (NW) arrays with square, hexagonal or triangular arrangements are investigated through systematic computations of the ideal short-circuit current density using three-dimensional rigorous coupled wave analysis. The geometrical dimensions are optimized for optically designing these solar cells: the optimal NW diameter, height and array period are of 200 ± 10 nm, 1-3 μm and 350-400 nm for the square arrangement with CdTe shell thickness of 40-60 nm. The effects of the CdTe shell thickness on the absorption of ZnO/CdTe NW arrays are revealed through the study of two optical key modes: the first one is confining the light into individual NWs, the second one is strongly interacting with the NW arrangement. It is also shown that the reflectivity of the substrate can improve Fabry-Perot resonances within the NWs: the ideal short-circuit current density is increased by 10% for the ZnO/fluorine-doped tin oxide (FTO)/ideal reflector as compared to the ZnO/FTO/glass substrate. Furthermore, the optimized square arrangement absorbs light more efficiently than both optimized hexagonal and triangular arrangements. Eventually, the enhancement factor of the ideal short-circuit current density is calculated as high as 1.72 with respect to planar layers, showing the high optical potentiality of ZnO/CdTe core-shell NW arrays.

  3. Light absorption processes and optimization of ZnO/CdTe core-shell nanowire arrays for nanostructured solar cells.

    Science.gov (United States)

    Michallon, Jérôme; Bucci, Davide; Morand, Alain; Zanuccoli, Mauro; Consonni, Vincent; Kaminski-Cachopo, Anne

    2015-02-20

    The absorption processes of extremely thin absorber solar cells based on ZnO/CdTe core-shell nanowire (NW) arrays with square, hexagonal or triangular arrangements are investigated through systematic computations of the ideal short-circuit current density using three-dimensional rigorous coupled wave analysis. The geometrical dimensions are optimized for optically designing these solar cells: the optimal NW diameter, height and array period are of 200 ± 10 nm, 1-3 μm and 350-400 nm for the square arrangement with CdTe shell thickness of 40-60 nm. The effects of the CdTe shell thickness on the absorption of ZnO/CdTe NW arrays are revealed through the study of two optical key modes: the first one is confining the light into individual NWs, the second one is strongly interacting with the NW arrangement. It is also shown that the reflectivity of the substrate can improve Fabry-Perot resonances within the NWs: the ideal short-circuit current density is increased by 10% for the ZnO/fluorine-doped tin oxide (FTO)/ideal reflector as compared to the ZnO/FTO/glass substrate. Furthermore, the optimized square arrangement absorbs light more efficiently than both optimized hexagonal and triangular arrangements. Eventually, the enhancement factor of the ideal short-circuit current density is calculated as high as 1.72 with respect to planar layers, showing the high optical potentiality of ZnO/CdTe core-shell NW arrays.

  4. Nuclear reactor pulse tracing using a CdZnTe electro-optic radiation detector

    Energy Technology Data Exchange (ETDEWEB)

    Nelson, Kyle A., E-mail: nuclearengg@gmail.com [S.M.A.R.T. Laboratory, Mechanical and Nuclear Engineering, Kansas State University, Manhattan KS 66506 (United States); Geuther, Jeffrey A. [TRIGA Mark II Nuclear Reactor, Mechanical and Nuclear Engineering, Kansas State University, Manhattan KS 66506 (United States); Neihart, James L.; Riedel, Todd A. [S.M.A.R.T. Laboratory, Mechanical and Nuclear Engineering, Kansas State University, Manhattan KS 66506 (United States); Rojeski, Ronald A. [Nanometrics, Inc., 1550 Buckeye Drive, Milpitas CA 95035 (United States); Ugorowski, Philip B.; McGregor, Douglas S. [S.M.A.R.T. Laboratory, Mechanical and Nuclear Engineering, Kansas State University, Manhattan KS 66506 (United States)

    2012-07-11

    CdZnTe has previously been shown to operate as an electro-optic radiation detector by utilizing the Pockels effect to measure steady-state nuclear reactor power levels. In the present work, the detector response to reactor power excursion experiments was investigated. Peak power levels during an excursion were predicted to be between 965 MW and 1009 MW using the Fuchs-Nordheim and Fuchs-Hansen models and confirmed with experimental data from the Kansas State University TRIGA Mark II nuclear reactor. The experimental arrangement of the Pockels cell detector includes collimated laser light passing through a transparent birefringent crystal, located between crossed polarizers, and focused upon a photodiode. The birefringent crystal, CdZnTe in this case, is placed in a neutron beam emanating from a nuclear reactor beam port. After obtaining the voltage-dependent Pockels characteristic response curve with a photodiode, neutron measurements were conducted from reactor pulses with the Pockels cell set at the 1/4 and 3/4 wave bias voltages. The detector responses to nuclear reactor pulses were recorded in real-time using data logging electronics, each showing a sharp increase in photodiode current for the 1/4 wave bias, and a sharp decrease in photodiode current for the 3/4 wave bias. The polarizers were readjusted to equal angles in which the maximum light transmission occurred at 0 V bias, thereby, inverting the detector response to reactor pulses. A high sample rate oscilloscope was also used to more accurately measure the FWHM of the pulse from the electro-optic detector, 64 ms, and is compared to the experimentally obtained FWHM of 16.0 ms obtained with the {sup 10}B-lined counter.

  5. Development of CdZnTe X-ray detectors at DSRI

    DEFF Research Database (Denmark)

    van Pamelen, M.A.J.; Budtz-Jørgensen, Carl; Kuvvetli, Irfan

    2000-01-01

    An overview of the development of CdZnTe X-ray detectors at the Danish Space Research Institute is presented. Initiated in the beginning of 1996, the main motivation at that time was to develop focal plane detectors for the novel type of hard X-ray telescopes, which are currently under study at D...... trapping has now little influence and the spectrum displays a pronounced Gaussian peak at 661 keV with a width (FWHM) of 6.9 keV. Also a small peak produced by CdTe escape events can now be observed. At the same time, no events have to be rejected....... at DSRI. With the advent of the Danish Micro Satellite program it was, however, recognised that this type of detector is very well suited for two proposed missions (eXCALIBur, AXO). The research at DSRI has so far been concentrated on the spectroscopic properties of the CZT detector. At DSRI we have...

  6. The Influence of Oxygen Substitution on the Optoelectronic Properties of ZnTe

    Directory of Open Access Journals (Sweden)

    Imad Khan

    2016-01-01

    Full Text Available We communicate theoretical results of the structural, electronic, and optical properties of ZnOxTe1-x (0≤x≤1 in the zincblende structure. The calculations are performed using full potential linearized augmented plane waves (FP-LAPW method, based on density functional theory (DFT. The structural properties are calculated with simple GGA (PBEsol, while the electronic and optical properties are calculated using mBJ-GGA. The mBJ-GGA is used to properly treat the active d-orbital in their valence shell. The ZnOTe alloy is highly lattice mismatched and consequently the lattice constants and bulk moduli largely deviate from the linear behavior. The calculated bandgaps are in agreement with the experimentally measured values, where the nature of bandgaps is direct for the whole range of x except at x=0.25. We also calculate the bandgap bowing parameter from our accurate bandgaps and resolve the existing controversy in this parameter.

  7. Dynamics of native oxide growth on CdTe and CdZnTe X-ray and gamma-ray detectors

    Science.gov (United States)

    Zázvorka, Jakub; Franc, Jan; Beran, Lukáš; Moravec, Pavel; Pekárek, Jakub; Veis, Martin

    2016-01-01

    Abstract We studied the growth of the surface oxide layer on four different CdTe and CdZnTe X-ray and gamma-ray detector-grade samples using spectroscopic ellipsometry. We observed gradual oxidization of CdTe and CdZnTe after chemical etching in bromine solutions. From X-ray photoelectron spectroscopy measurements, we found that the oxide consists only of oxygen bound to tellurium. We applied a refined theoretical model of the surface layer to evaluate the spectroscopic ellipsometry measurements. In this way we studied the dynamics and growth rate of the oxide layer within a month after chemical etching of the samples. We observed two phases in the evolution of the oxide layer on all studied samples. A rapid growth was visible within five days after the chemical treatment followed by semi-saturation and a decrease in the growth rate after the first week. After one month all the samples showed an oxide layer about 3 nm thick. The oxide thickness was correlated with leakage current degradation with time after surface preparation. PMID:27933118

  8. Simulation, Modeling, and Crystal Growth of Cd0.9Zn0.1Te for Nuclear Spectrometers

    Energy Technology Data Exchange (ETDEWEB)

    Mandal, Krishna [EIC Laboratories, Inc.; Kang, Sung Hoon [EIC Laboratories, Inc.; Choi, Michael [EIC Laboratories, Inc.; Bello, Job [EIC Laboratories, Inc.; Zheng, Lili [State University of New York, Stony Brook; Zhang, Hui [State University of New York, Stony Brook; Groza, Michael [Fisk University, Nashville, TN; Roy, Utpal N. [Fisk University, Nashville, TN; Burger, Arnold [Fisk University, Nashville, TN; Jellison Jr, Gerald Earle [ORNL; Holcomb, David Eugene [ORNL; Wright, Gomez W [ORNL; Williams, Joseph A [ORNL

    2006-01-01

    High-quality, large (10 cm long and 2.5 cm diameter), nuclear spectrometer grade Cd{sub 0.9}Zn{sub 0.1}Te (CZT) single crystals have been grown by a controlled vertical Bridgman technique using in-house zone refined precursor materials (Cd, Zn, and Te). A state-of-the-art computer model, multizone adaptive scheme for transport and phase-change processes (MASTRAP), is used to model heat and mass transfer in the Bridgman growth system and to predict the stress distribution in the as-grown CZT crystal and optimize the thermal profile. The model accounts for heat transfer in the multiphase system, convection in the melt, and interface dynamics. The grown semi-insulating (SI) CZT crystals have demonstrated promising results for high-resolution room-temperature radiation detectors due to their high dark resistivity ({rho} {approx} 2.8 x 10{sup 11} {Theta} cm), good charge-transport properties, electron and hole mobility-life-time product, {mu}{tau}{sub e} {approx} (2-5) x 10{sup -3} and {mu}{tau}{sub h} {approx} (3-5) x 10{sup -5} respectively, and low cost of production. Spectroscopic ellipsometry and optical transmission measurements were carried out on the grown CZT crystals using two-modulator generalized ellipsometry (2-MGE). The refractive index n and extinction coefficient k were determined by mathematically eliminating the {approx}3-nm surface roughness layer. Nuclear detection measurements on the single-element CZT detectors with {sup 241}Am and {sup 137}Cs clearly detected 59.6 and 662 keV energies with energy resolution (FWHM) of 2.4 keV (4.0%) and 9.2 keV (1.4%), respectively.

  9. [The impact of ZnS/CdS composite window layer on the quantun efficiency of CdTe solar cell in short wavelength].

    Science.gov (United States)

    Zhang, Li-xiang; Feng, Liang-huan; Wang, Wen-wu; Xu, Hang; Wu, Li-li; Zhang, Jing-quan; Li, Wei; Zeng, Guang-gen

    2015-02-01

    ZnS/CdS composite window layer was prepared by magnetron sputtering method and then applied to CdTe solar cell. The morphology and structure of films were measured. The data of I-V in light and the quantum efficiency of CdTe solar cells with different window layers were also measured. The effect of ZnS films prepared in different conditions on the performance of CdTe solar cells was researched. The effects of both CdS thickness and ZnS/CdS composite layer on the transmission in short wavelength were studied. Particularly, the quantum efficiency of CdTe solar cells with ZnS/CdS window layer was measured. The results show as follows. With the thickness of CdS window layer reducing from 100 to 50 nm, the transmission increase 18.3% averagely in short wavelength and the quantum efficiency of CdTe solar cells increase 27.6% averagely. The grain size of ZnS prepared in 250 degrees C is smaller than prepared at room temperature. The performance of CdTe solar cells with ZnS/CdS window layer is much better if ZnS deposited at 250 degrees C. This indicates grain size has some effect on the electron transportation. When the CdS holds the same thickness, the transmission of ZnS/CdS window layer was improved about 2% in short wavelength compared with CdS window layer. The quantum efficiency of CdTe solar cells with ZnS/CdS window layer was also improved about 2% in short wavelength compared with that based on CdS window layer. These indicate ZnS/CdS composite window layer can increase the photon transmission in short wavelength so that more photons can be absorbed by the absorbent layer of CdTe solar cells.

  10. Sensing application of an optical fiber dip coated with L-Cystein ethyl ester hydrochloride capped ZnTe quantum dots

    Directory of Open Access Journals (Sweden)

    Sundaray Madhulita

    2016-09-01

    Full Text Available Optical fiber in conjunction with ZnTe quantum dots (QDs is investigated for sensing application. ZnTe QDs, are synthesized by a simple chemical bottom up approach. Quantum dots are capped with L-Cystein ethyl ester hydrochloride (LEEH, to increase their stability. Then LEEH capped ZnTe QDs, whose size is estimated as 2.29 nm by effective mass approximation (EMA, are dip-coated on a cladding removed optical fiber. Different concentrations of alcohol and ammonia are used to investigate the sensing behavior. It is found that sensitivity of the sensor increases with the use of QDs for both alcohol and ammonia.

  11. Distinct enhancement of sub-bandgap photoresponse through intermediate band in high dose implanted ZnTe:O alloys

    Science.gov (United States)

    Li, Jing; Ye, Jiandong; Ren, Fangfang; Tang, Dongming; Yang, Yi; Tang, Kun; Gu, Shulin; Zhang, Rong; Zheng, Youdou

    2017-03-01

    The demand for high efficiency intermediate band (IB) solar cells is driving efforts in producing high quality IB photovoltaic materials. Here, we demonstrate ZnTe:O highly mismatched alloys synthesized by high dose ion implantation and pulsed laser melting exhibiting optically active IB states and efficient sub-gap photoresponse, as well as investigate the effect of pulsed laser melting on the structural and optical recovery in detail. The structural evolution and vibrational dynamics indicates a significant structural recovery of ZnTe:O alloys by liquid phase epitaxy during pulsed laser melting process, but laser irradiation also aggravates the segregation of Te in ZnTe:O alloys. A distinct intermediate band located at 1.8 eV above valence band is optically activated as evidenced by photoluminescence, absorption and photoresponse characteristics. The carrier dynamics indicates that carriers in the IB electronic states have a relatively long lifetime, which is beneficial for the fast separation of carriers excited by photons with sub-gap energy and thus the improved overall conversion efficiency. The reproducible capability of implantation and laser annealing at selective area enable the realization of high efficient lateral junction solar cells, which can ensure extreme light trapping and efficient charge separation.

  12. The transport phenomena during the growth of ZnTe crystal by the temperature gradient solution growth technique

    Science.gov (United States)

    Yin, Liying; Jie, Wanqi; Wang, Tao; Zhou, Boru; Yang, Fan

    2017-03-01

    A numerical model is developed to simulate the temperature field, the thermosolutal convection, the solute segregation and the growth interface morphology during the growth of ZnTe crystal from Te rich solution by the temperature gradient solution growth (TGSG) technique. Effects of the temperature gradient on the transport phenomena, the growth interface morphology and the growth rate are examined. The influences of the latent heat and the thermal conductivity of ZnTe crystal on the transport phenomena and the growth interface are also discussed. We find that the mass transfer of ZnTe in the solution is very slow because of the low diffusion coefficient and the lack of mixing in the lower part of the solution. During the growth, dilute solution with high density and low growth temperature accumulates in the central region of the growth interface, making the growth interface change into two distinct parts. The inner part is very concave, while the outer part is relatively flat. Growth conditions in front of the two parts of the growth interface are different. The crystalline quality of the inner part of the ingot is predicted to be worse than that of the outer part. High temperature gradient can significantly increase the growth rate, and avoid the diffusion controlled growth to some extent.

  13. Syntheses and Structures of the Quaternary Copper Tellurides K 3Ln4Cu 5Te 10 ( Ln=Sm, Gd, Er), Rb 3Ln4Cu 5Te 10 ( Ln=Nd, Gd), and Cs 3Gd 4Cu 5Te 10

    Science.gov (United States)

    Huang, Fu Qiang; Ibers, James A.

    2001-09-01

    Six quaternary alkali-metal rare-earth copper tellurides K3Ln4Cu5Te10 (Ln=Sm, Gd, Er), Rb3Ln4Cu5Te10 (Ln=Nd, Gd), and Cs3Gd4Cu5Te10 have been synthesized at 1123 K with the use of reactive fluxes of alkali-metal halides ACl (A=K, Rb, Cs). All crystallographic data were collected at 153 K. These compounds crystallize in space group Pnnm of the orthorhombic system with two formula units in cells of dimensions (A3Ln4, a, b, c (Å)): K3Sm4, 16.590(2), 17.877(2), 4.3516(5); K3Gd4, 16.552(4), 17.767(4), 4.3294(9); K3Er4, 16.460(4), 17.550(4), 4.2926(9); Rb3Nd4, 17.356(1), 17.820(1), 4.3811(3); Rb3Gd4, 17.201(2), 17.586(2), 4.3429(6); Cs3Gd4, 17.512(1), 17.764(1), 4.3697(3). The corresponding R1 indices for the refined structures are 0.0346, 0.0315, 0.0212, 0.0268, 0.0289, and 0.0411. The three K3Ln4Cu5Te10 structures belong to one structure type and the Rb3Ln4Cu5Te10 (Ln=Nd, Gd) and Cs3Gd4Cu5Te10 structures belong to another one, the difference being the location of one of the three unique Cu atoms. Both structure types are three-dimensional tunnel structures that contain similar Ln/Te fragments built from LnTe6 octahedra and CuTe4 tetrahedra. The CuTe4 tetrahedra form 1∞[CuTe5-3] and 1∞[CuTe3-2] chains. The alkali-metal atoms, which are in the tunnels, are coordinated to seven or eight Te atoms.

  14. Nondestructive Characterization of Residual Threading Dislocation Density in HgCdTe Layers Grown on CdZnTe by Liquid-Phase Epitaxy

    Science.gov (United States)

    Fourreau, Y.; Pantzas, K.; Patriarche, G.; Destefanis, V.

    2016-09-01

    The performance of mercury cadmium telluride (MCT)-based infrared (IR) focal-plane arrays is closely related to the crystalline perfection of the HgCdTe thin film. In this work, Te-rich, (111)B-oriented HgCdTe epilayers grown by liquid-phase epitaxy on CdZnTe substrates have been studied. Surface atomic steps are shown on as-grown MCT materials using atomic force microscopy (AFM) and white-light interferometry (WLI), suggesting step-flow growth. Locally, quasiperfect surface spirals are also evidenced. A demonstration is given that these spirals are related to the emergence of almost pure screw threading dislocations. A nondestructive and quantitative technique to measure the threading dislocation density is proposed. The technique consists of counting the surface spirals on the as-grown MCT surface from images obtained by either AFM or WLI measurements. The benefits and drawbacks of both destructive—chemical etching of HgCdTe dislocations—and nondestructive surface imaging techniques are compared. The nature of defects is also discussed. Finally, state-of-the-art threading dislocation densities in the low 104 cm-2 range are evidenced by both etch pit density (EPD) and surface imaging measurements.

  15. Competing mechanism driving diverse pressure dependence of thermal conductivity of X Te (X =Hg ,Cd , and Zn)

    Science.gov (United States)

    Ouyang, Tao; Hu, Ming

    2015-12-01

    Effectively engineering the lattice thermal conductivity of materials is a key interest of the current thermal science community. Pressure or compressive strain is one of the most worthwhile processes to modify the thermal transport property of materials, due to its robust tunability and flexibility of realization. While it is well documented in the literature that the application of hydrostatic pressure normally increases the thermal conductivity of bulk materials, little work has been performed on abnormal pressure-dependent thermal conductivity and the governing mechanism has not been fully understood yet. In this paper, taking bulk telluride systems X Te (X =Hg ,Cd ,Zn ) as examples, we show, by combining first-principle calculation and the phonon Boltzmann transport equation, that the thermal conductivity presents diverse pressure dependence although they belong to the same group. The thermal conductivity of ZnTe is independent of pressure, while abnormal negative pressure dependence of thermal conductivity is observed in HgTe. As for CdTe, the trend falls in between HgTe and ZnTe and relies largely on the temperature. By comparing the key contributors of the lattice thermal conductivity, we find that the diverse pressure dependence of the lattice thermal conductivity is governed by the competition between the enhancement of group velocity of longitudinal acoustic and optic modes and the reduction of phonon relaxation time of transverse acoustic modes, with both effects being fully quantified by our calculation. Comparison with traditional bulk systems such as silicon further underpins the governing mechanism. The correlation between the diverse thermal transport phenomena and the nature of the atomic bonding is also qualitatively established. These findings are expected to deepen our understanding of manipulating phonon transport of bulk materials via simple compressive strain and are also helpful for related applications, such as optimizing thermoelectric

  16. Magnetic and magneto-optical studies on Zn{sub 1-x}Cr{sub x}Te (x=0.05) films grown on glass substrate

    Energy Technology Data Exchange (ETDEWEB)

    Soundararajan, D. [Thin Films and Nanomaterials Laboratory, Department of Physics, Bharathiar University, Coimbatore 641 046 (India); Mangalaraj, D. [Department of Nanoscience and Technology, Bharathiar University, Coimbatore 641 046 (India)], E-mail: dmraj800@yahoo.com; Nataraj, D. [Thin Films and Nanomaterials Laboratory, Department of Physics, Bharathiar University, Coimbatore 641 046 (India); Dorosinskii, L. [National Institute of Metrology (TUBITAK-UME), P.K. 54, 41470 Gebze-Kocaeli (Turkey); Santoyo-Salazar, J. [Instituto de Investigaciones en Materiales, Universidad Nacional Autonoma de Mexico, Circuito Exterior s/n. Ciudad Uuniversitaria AP 70-360, Mexico D.F., 04510 (Mexico); Institut de Physique et Chimie des Materiaux de Strasbourg, UMR CNRS-ULP-ECPM 7504, 23, rue du Loess, BP 43, 67034 Strasbourg Cedex 2 (France); Riley, M.J. [University of Queensland, School of Molecular Microbial Sciences, St Lucia 4072 (Australia)

    2009-12-15

    Zn{sub 1-x}Cr{sub x}Te (x=0.05) films were prepared by thermal evaporation onto glass substrates. X-ray diffraction (XRD) was used to determine the crystalline quality of the ZnTe:Cr film. Magnetic force microscopy (MFM) investigation has shown a non-uniform distribution of magnetic domains with an average size of 4 nm at room temperature. SQUID measurements have further shown that the non-uniform distribution of domains does not affect the room temperature ferromagnetism of this material. Electron spin resonance spectroscopy (ESR) was done to determine the Cr valence state in the ZnTe lattice. Magnetic circular dichroism (MCD) analysis was used to confirm the ZnCrTe phase contributing to the ferromagnetic behavior.

  17. Optimal bandgap variants of Cd sub 1 sub - sub x Zn sub x Te for high-resolution X-ray and gamma-ray spectroscopy

    CERN Document Server

    Toney, J E; James, R B

    1999-01-01

    We show that the trade-off between noise and charge generation statistics in Cd sub 1 sub - sub x Zn sub x Te leads to an optimal band gap of approximately 2.0 eV at room temperature. This implies a ZnTe fraction of approximately 0.7-0.8. We show that for X-rays and relatively low energy gamma-rays Cd sub 0 sub . sub 2 Zn sub 0 sub . sub 8 Te theoretically offers a significant potential improvement in energy resolution over Cd sub 0 sub . sub 9 Zn sub 0 sub . sub 1 Te even if compensation of shallow levels is less complete and carrier lifetimes are an order of magnitude lower for the higher x variant. We also show that these calculations are consistent with observed detector performance reported by many workers over a large period of time.

  18. Study of far-infrared reflection and Raman scattering spectra in reactive ion, etched ZnTe

    Institute of Scientific and Technical Information of China (English)

    吴森; 沈文忠; 小川博司; 郭其新

    2003-01-01

    Far-infrared reflection and Raman scattering measurements have been carried out on reactive ion,etched p-ZnTe samples.The averaged thickness of the surface damaged layer is found to be in the range of 1.0-1.5μm,and the,etch-induced defect density is in the order of 1018cm-3.The Raman intensity ratio between the second-order Raman peaks and the first-order longitudinal optical phonons reveals an increase trend with the radio frequency(rf)power.With the aid of related theories,we discuss the effects of the rf plasma power and the concentration of CH4/H2 on the damage,disorder,and the second-order Raman structures in p-ZnTe samples.

  19. Investigation of CdZnTe and LiNbO{sub 3} as electro-optic neutron detectors

    Energy Technology Data Exchange (ETDEWEB)

    Nelson, Kyle A.; Edwards, Nathan [S.M.A.R.T. Laboratory, Mechanical and Nuclear Engineering Department, Kansas State University, Manhattan, KS 66506 (United States); Harrison, Mark J. [Nuclear and Radiological Engineering, University of Florida, 202 NSB, Gainesville, FL 32611 (United States); Kargar, Alireza; McNeil, Walter J. [S.M.A.R.T. Laboratory, Mechanical and Nuclear Engineering Department, Kansas State University, Manhattan, KS 66506 (United States); Rojeski, Ronald A. [Cymer, Inc., San Diego, CA 92127 (United States); McGregor, Douglas S., E-mail: mcgregor@ksu.ed [S.M.A.R.T. Laboratory, Mechanical and Nuclear Engineering Department, Kansas State University, Manhattan, KS 66506 (United States)

    2010-08-21

    An alternative method for the detection of thermal neutrons has been investigated utilizing the Pockels effect with CdZnTe and LiNbO{sub 3}. A photodiode was used to indicate a change in light intensity transmitted through an assembly consisting of polarizer, Pockels cell, and analyzer. Ionization due to neutron reaction products can perturb an established electric field within the cell, thus changing the transmitted light intensity through the assembly. The CdZnTe cell demonstrated a repeatable change in transmitted light intensity, increasing with neutron flux, marking the first recorded use of this technology to detect neutrons. However, the LiNbO{sub 3} cell gave no response to neutron irradiation, and is assumed to be a result of the extremely short carrier lifetimes found in the material.

  20. Fluorescent probe for detection of Cu2+ using core-shell CdTe/ZnS quantum dots.

    Science.gov (United States)

    Bian, Wei; Wang, Fang; Zhang, Hao; Zhang, Lin; Wang, Li; Shuang, Shaomin

    2015-11-01

    Core-shell CdTe/ZnS quantum dots capped with 3-mercaptopropionic acid (MPA) were successfully synthesized in aqueous medium by hydrothermal synthesis. These quantum dots have advantages compared to traditional quantum dots with limited biological applications, high toxicity and tendency to aggregate. The concentration of Cu(2+) has a significant impact on the fluorescence intensity of quantum dots (QDs), therefore, a rapid sensitive and selective fluorescence probe has been proposed for the detection of Cu(2+) in aqueous solution. Under optimal conditions, the fluorescence intensity of CdTe/ZnS QDs was linearly proportional to the concentration of Cu(2+) in the range from 2.5 × 10(-9) M to 17.5 × 10(-7) M with the limit of 1.5 × 10(-9) M and relative standard deviation of 0.23%. The quenching mechanism is static quenching with recoveries of 97.30-102.75%.

  1. Impurity Studies of Cd(0.8)Zn(0.2)Te Crystals Using Photoluminescence and Glow Discharge Mass Spectroscopy

    Science.gov (United States)

    Su, Ching-Hua; Lehoczky, Sandor L.; Scripa, Rosalie N.

    2005-01-01

    Cd(1-x)Zn(x)Te semiconductor crystal is a highly promising material for room temperature x- and gamma-ray detector applications because of its high resistivity, long carrier lifetime, and relatively high hole and electron mobilities. This paper reports the investigation of the impurities in several Cd(1-x)Zn(x)Te (x = 0.20) crystals grown using the vertical Bridgman method under a Cd overpressure. The impurity concentrations were measured using glow discharge mass spectroscopy (GDMS). The energy states of the impurities were studied using photoluminescence (PL) spectroscopy at liquid helium temperature. The PL spectra showed a series of sharp high energy lines which are associated with free excitons and excitons bound to impurities as donors and acceptors in the crystals. The impurities also contributed to donor-acceptor pair recombination. The correlation between the GDMS and PL results will be reported.

  2. Laser ablation and photostimulated passivation of the surface of Cd1–хZnхTe crystals

    Directory of Open Access Journals (Sweden)

    Zagoruiko Yu. A.

    2011-06-01

    Full Text Available A new physical method of Cd1–хZnхTe-detectors passivation is proposed — the treatment of crystal surface by a laser ablation (LA with subsequent photostimulated passivation (PhSP, during wich a high-resistance oxide layer is formed on it’s surface after the surface cleaning under intensive light irradiation effect. It is shown that the method of LA+PhSP is manufacturable and in comparison with PhSP and PhESP methods developed earlier provides a thick, homogeneous and high-oxide films, which significantly increases the surface resistivity of Cd1–хZnхTe samples and reduces leakage currents in them.

  3. Study of the Zn{sub 0.75}M{sub 0.25}Te (M = Fe, Co, Ni) diluted magnetic semiconductor system by first principles approach

    Energy Technology Data Exchange (ETDEWEB)

    Mahmood, Q. [Department of Physics, University of the Punjab, Quaid-i-Azam Campus, Lahore 54590 (Pakistan); Javed, A., E-mail: athar.physics@pu.edu.pk [Department of Physics, University of the Punjab, Quaid-i-Azam Campus, Lahore 54590 (Pakistan); Murtaza, G. [Centre for Advanced Studies in Physics, GC University, Lahore 54000 (Pakistan); Alay-e-Abbas, S.M. [Department of Physics, GC University, Faisalabad (Pakistan)

    2015-07-15

    Structure, mechanical and electronic properties of ternary Zn{sub 0.75}M{sub 0.25}Te (M = Fe, Co and Ni) diluted magnetic semiconductor system has been studied by first principles approach. Theoretical results revealed that the structure of all three alloys was stable in ferromagnetic phase. The enthalpies of formation were negative which also confirmed the structural stability of all three alloys in ferromagnetic phase. For Zn{sub 0.75}M{sub 0.25}Te (M = Fe, Co, Ni) alloys, the equilibrium lattice constants decreased from Fe to Ni. The band structure calculations showed that the Zn{sub 0.75}M{sub 0.25}Te (M = Fe, Co, Ni) alloys exhibit ferromagnetic semiconductor behavior. The energy band gap (E{sub g}) increased from 2.19 eV to 2.33 eV with the addition of 25%M (M = Fe, Co, Ni) in Zn{sub 0.75}M{sub 0.25}Te alloys. For Zn{sub 0.75}M{sub 0.25}Te (M = Fe, Co, Ni) alloys, the magnetic moments of magnetic ions (Fe, Co, Ni) decreased from Fe to Ni, whereas small local magnetic moments were also found to appear at the non-magnetic (Zn and Te) atomic sites due to p-d hybridization. - Graphical abstract: Display Omitted - Highlights: • Ab initio calculations has been performed for Zn{sub 0.75}M{sub 0.25}Te (M = Fe, Co, Ni) alloys. • Equilibrium lattice constants were calculated for all three alloys. • All three alloys exhibit stable structure in ferromagnetic phase. • Band gap of Zn{sub 0.75}M{sub 0.25}Te (M = Fe, Co, Ni) alloys increased from Fe to Ni. • Mechanical and magnetic behavior was studied for all three alloys.

  4. Composition dependence of electrical properties of ZnF2–MO–TeO2 glasses

    Indian Academy of Sciences (India)

    D K Durga; N Veeraiah

    2001-08-01

    Dielectric constant ('), loss (tan ), a.c. conductivity () of ZnF2–MO–TeO2 glasses with varying concentrations of MO (P2O5, As2O3 and Bi2O3) were measured as a function of frequency and temperature over moderately wide ranges. From the analysis of these studies along with IR spectra and DTA results of these glasses, the structural changes in the systems with the concentration of metal oxides are discussed.

  5. Transport properties of Cd{sub 0.8}Zn{sub 0.2}Te crystals

    Energy Technology Data Exchange (ETDEWEB)

    Gamal, G.A. [Physics Department, Faculty of Science, South Valley University, Qena 83523 (Egypt); Abou Zied, M. [Physics Department, Faculty of Science, South Valley University, Qena 83523 (Egypt); Ebnalwaled, A.A. [Physics Department, Faculty of Science, South Valley University, Qena 83523 (Egypt)]. E-mail: Kh_bnalwaled@yahoo.com

    2007-04-30

    After Cd{sub 0.8}Zn{sub 0.2}Te (CZT) crystals were prepared by a special design based on Bridgman technique, the transport properties were investigated. The dependence of electrical conductivity, Hall effect, Hall mobility, charge carriers concentration and thermoelectric power on temperatures was carried out in the temperature range (228-500 K). The relaxation time for both majority and minority carriers was estimated. The scattering mechanism for carrier transport was discussed in the same temperature range.

  6. Time response of Cd0.9Zn0.1Te crystals under transient and pulsed irradiation

    Directory of Open Access Journals (Sweden)

    X. C. Zhao

    2012-03-01

    Full Text Available A CdZnTe detector based on high-quality Cd0.9Zn0.1Te crystals was developed and tested as a monitor in high-intensity radiation fields. The current–voltage measurements were performed using thermally evaporated Au contacts deposited on the crystals, which revealed resistivity of 1010 Ω·cm. Typical leakage current for the planar devices was ∼3 nA for a field strength of 1000 V·cm–1. The test results show that the CdZnTe detector has a fast time response, with a rise time of approximately 2 ns, when exposed to transient and pulsed irradiation of X-rays or electron beams. The decay of current curves is observed and discussed according to charge carrier trapping effects and space-charge accumulation mechanisms. It is suggested that the current decreases quickly with strengthening of the electric field, possibly because of charge de-trapping.

  7. Electrical properties of Au/CdZnTe/Au detectors grown by the boron oxide encapsulated Vertical Bridgman technique

    Energy Technology Data Exchange (ETDEWEB)

    Turturici, A.A. [Dipartimento di Fisica e Chimica, Università di Palermo, Viale delle Scienze, Edificio 18, Palermo 90128 (Italy); Abbene, L., E-mail: leonardo.abbene@unipa.it [Dipartimento di Fisica e Chimica, Università di Palermo, Viale delle Scienze, Edificio 18, Palermo 90128 (Italy); Gerardi, G. [Dipartimento di Fisica e Chimica, Università di Palermo, Viale delle Scienze, Edificio 18, Palermo 90128 (Italy); Benassi, G. [due2lab s.r.l., Via Paolo Borsellino 2, Scandiano, 42019 Reggio Emilia (Italy); Bettelli, M.; Calestani, D. [IMEM/CNR, Parco Area delle Scienze 37/A, Parma 43100 (Italy); Zambelli, N. [due2lab s.r.l., Via Paolo Borsellino 2, Scandiano, 42019 Reggio Emilia (Italy); Raso, G. [Dipartimento di Fisica e Chimica, Università di Palermo, Viale delle Scienze, Edificio 18, Palermo 90128 (Italy); Zappettini, A. [IMEM/CNR, Parco Area delle Scienze 37/A, Parma 43100 (Italy); Principato, F. [Dipartimento di Fisica e Chimica, Università di Palermo, Viale delle Scienze, Edificio 18, Palermo 90128 (Italy)

    2016-09-11

    In this work we report on the results of electrical characterization of new CdZnTe detectors grown by the Boron oxide encapsulated Vertical Bridgman technique (B-VB), currently produced at IMEM-CNR (Parma, Italy). The detectors, with gold electroless contacts, have different thicknesses (1 and 2.5 mm) and the same electrode layout, characterized by a central anode surrounded by a guard-ring electrode. Investigations on the charge transport mechanisms and the electrical contact properties, through the modeling of the measured current–voltage (I–V) curves, were performed. Generally, the detectors are characterized by low leakage currents at high bias voltages even at room temperature: 34 nA/cm{sup 2} (T=25 °C) at 10,000 V/cm, making them very attractive for high flux X-ray measurements, where high bias voltage operation is required. The Au/CdZnTe barrier heights of the devices were estimated by using the interfacial layer-thermionic-diffusion (ITD) model in the reverse bias voltage range. Comparisons with CdZnTe detectors, grown by Traveling Heater Method (THM) and characterized by the same electrode layout, deposition technique and resistivity, were also performed.

  8. Synchrotron radiation studies of spectral response features caused by Te inclusions in a large volume coplanar grid CdZnTe detector

    CERN Document Server

    Hansson, Conny C T; Quarati, Francesco; Kozorezov, Alexander; Gostilo, Vladimir; Lumb, David

    2011-01-01

    We report preliminary results from a synchrotron radiation study of Te inclusions in a large volume single crystal CdZnTe (CZT) coplanar-grid detector. The experiment was carried out by probing individual inclusions with highly collimated monochromatic X-and gamma-ray beams. It was found that for shallow X-ray interaction depths, the effect of an inclusion on measured energy loss spectra is to introduce a ~10% shift in the peak centroid energy towards lower channel numbers. The total efficiency is however not affected, showing that the net result of inclusions is a reduction in the Charge Collection Efficiency (CCE). For deeper interaction depths, the energy-loss spectra shows the emergence of two distinct peaks, both downshifted in channel number. We note that the observed spectral behavior shows strong similarities with that reported in semiconductors which exhibit polarization effects, suggesting that the underlying mechanism is common.

  9. Cooled CdZnTe detectors for X-ray astronomy

    CERN Document Server

    Bale, G; Seller, P; Lowe, B

    1999-01-01

    Recent results combining thermoelectrically cooled CdZnTe detectors with a low-noise Pentafet preamplifier are presented. Cooling between -30 deg. C and -40 deg. C reduces the leakage current of the detectors and allows the use of a pulsed reset preamplifier and long shaping times, significantly improving the energy resolution. Mn K subalpha X-rays at 5.9 keV have been observed with a resolution of less than 280 eV FWHM and a peak to background of more than 200:1. The Fano factor of the material has been estimated at 0.11+-0.012 at -40 deg. C. The detector requirement for X-ray astronomy will be a photon-counting imaging spectrometer. A 16x16 element, bump bonded pixel detector is described and results from a prototype silicon array presented. The detector is constructed with ASIC amplifiers with a system noise of <25 electrons rms and should give an energy resolution comparable to the Pentafet results presented here.

  10. Photoconductivity and high-field effects in amorphous Se83Te15Zn2 thin film

    Indian Academy of Sciences (India)

    S Shukla; S Kumar

    2011-12-01

    The glassy alloy of Se83Te15Zn2 has been prepared by conventional rapid melt-quenching technique. The glassy nature of the prepared alloy is confirmed through X-ray diffraction (XRD) technique. A thin film of the aforesaid material was prepared by thermal evaporation technique. Coplanar indium electrode was used. Current–voltage (–) characteristics and photoconductivity measurements were obtained. At low electric field, ohmic, and at high electric fields ( ∼ 104 V/cm), non-ohmic behaviour was observed. An analysis of the experimental data confirms the presence of space charge limited conduction (SCLC) in the glassy material studied in the present case. From the fitting of the data to the theory of SCLC, the density of defect states (DOS) near the Fermi level was calculated. Temperature dependence of conductivity in dark as well as in the presence of light shows that conduction is through a thermally activated process in both the cases. The activation energy is found to decrease with the increase in light intensity. This indicates the shift of the Fermi level with intensity. Transient photoconductivity measurements at different temperatures indicate that the decay of photoconductivity is quite slow, which is found to be non-exponential in the present case, indicating the presence of a continuous distribution of defect states in the aforesaid glassy alloy.

  11. Direct conversion Si and CdZnTe detectors for digital mammography

    CERN Document Server

    Yin Shi Shi; Maeding, D; Mainprize, J; Mawdsley, G; Yaffe, M J; Gordon, E E; Hamilton, W J

    2000-01-01

    Hybrid pixel detector arrays that convert X-rays directly into charge signals are under development at NOVA for application to digital mammography. This technology also has wide application possibilities in other fields of radiology or in industrial imaging, nondestructive evaluation (NDE) and nondestructive inspection (NDI). These detectors have potentially superior properties compared to either emulsion-based film-screen systems which has nonlinear response to X-rays, or phosphor-based detectors in which there is an intermediate step of X-ray to light photon conversion (Feig and Yaffe, Radiol. Clinics North America 33 (1995) 1205-1230). Potential advantages of direct conversion detectors are high quantum efficiencies (QE) of 98% or higher (for 0.3 mm thick CdZnTe detector with 20 keV X-rays), improved contrast, high sensitivity and low intrinsic noise. These factors are expected to contribute to high detective quantum efficiency (DQE). The prototype hybrid pixel detector developed has 50x50 mu m pixel size,...

  12. Charge collection characteristics of Frisch collar CdZnTe gamma-ray spectrometers

    Energy Technology Data Exchange (ETDEWEB)

    Harrison, Mark J. [Kansas State University, Manhattan, KS 66506 (United States)], E-mail: harrison@ksu.edu; Kargar, Alireza; McGregor, Douglas S. [Kansas State University, Manhattan, KS 66506 (United States)

    2007-08-21

    A collimated {sup 198}Au source was used to determine the charge collection efficiency (CCE) at several locations along the length of a 3.4x3.4x5.5 mm{sup 3} CdZnTe bar detector, both in planar configuration and with Frisch collars of varying length. For each configuration, a 0.50-mm-long region spanning the width of the device was irradiated with 411-keV gamma rays produced by a neutron-activated gold foil. Irradiation began at the cathode and stepped in 0.50-mm steps toward the anode, with a spectrum being collected at each location. By observing the channel location of the full-energy peak in each collected spectrum, an average CCE was determined for each irradiated region. The CCE was found to vary nearly linearly along the length of the device in the planar configuration, starting at a peak value of 89% and dropping to a minimum measured value of 26% near the anode. The addition of a Frisch collar covering the entire length of the crystal greatly altered the CCE profile, which remained near 87% for approximately two-thirds of the length, then sharply dropped near the anode. Results were confirmed by theoretical models. Further CCE mapping was also completed for devices with Frisch collars of various lengths. Those results are reported as well.

  13. CdZnTe detector for computed tomography based on weighting potential

    Energy Technology Data Exchange (ETDEWEB)

    Lim, Hyun Jong; Park, Chan Sun; Kim, Jung Su; Kim, Jung Min; Choi, Jong Hak; Kim, Ki Hyun [Korea University, Seoul (Korea, Republic of)

    2016-03-15

    Room-temperature operating CdZnTe(CZT) material is an innovative radiation detector which could reduce the patient dose to one-tenth level of conventional CT (Computed Tomography) and mammography system. The pixel and pixel pitch in the imaging device determine the conversion efficiency of incident Xor gamma-ray and the cross-talk of signal, that is, image quality of detector system. The weighting potential is the virtual potential determined by the position and geometry of electrode. The weighting potential obtained by computer-based simulation in solving Poisson equation with proper boundaries condition. The pixel was optimized by considering the CIE (charge induced efficiency) and the signal cross-talk in CT detector system. The pixel pitch was 1-mm and the detector thickness was 2-mm in the simulation. The optimized pixel size and inter-pixel distance for maximizing the CIE and minimizing the signal cross-talk is about 750 μm and 125 μm, respectively.

  14. Charge-sensitive front-end electronics with operational amplifiers for CdZnTe detectors

    Science.gov (United States)

    Födisch, P.; Berthel, M.; Lange, B.; Kirschke, T.; Enghardt, W.; Kaever, P.

    2016-09-01

    Cadmium zinc telluride (CdZnTe, CZT) radiation detectors are suitable for a variety of applications, due to their high spatial resolution and spectroscopic energy performance at room temperature. However, state-of-the-art detector systems require high-performance readout electronics. Though an application-specific integrated circuit (ASIC) is an adequate solution for the readout, requirements of high dynamic range and high throughput are not available in any commercial circuit. Consequently, the present study develops the analog front-end electronics with operational amplifiers for an 8×8 pixelated CZT detector. For this purpose, we modeled an electrical equivalent circuit of the CZT detector with the associated charge-sensitive amplifier (CSA). Based on a detailed network analysis, the circuit design is completed by numerical values for various features such as ballistic deficit, charge-to-voltage gain, rise time, and noise level. A verification of the performance is carried out by synthetic detector signals and a pixel detector. The experimental results with the pixel detector assembly and a 22Na radioactive source emphasize the depth dependence of the measured energy. After pulse processing with depth correction based on the fit of the weighting potential, the energy resolution is 2.2% (FWHM) for the 511 keV photopeak.

  15. Optimization of control parameters of CdZnTe ACRT-Bridgman single crystal growth

    Institute of Scientific and Technical Information of China (English)

    LIU Juncheng

    2004-01-01

    The CdZnTe vertical Bridgman single crystal process with accelerated crucible rotation technique (ACRT) has been simulated. Effects have been investigated of the ACRT wave parameters on the solid-liquid interface concavity and the solute segregation of the crystal. The results show that ACRT can result in the increase of both the solid-liquid interface concavity and the temperature gradient of the melt in the front of the solid-liquid interface, of which the magnitude varies from small to many times when the ACRT wave parameters change. Of the ACRT wave parameters, the increase of the crucible maximum rotation rate can hardly improve the radial solute segregation of the crystal, but the variation of the crucible acceleration time, the keep time at the maximum rotation rate, and the crucible deceleration time can affect the solute segregation of the single crystal extraordinarily. With suitable wave parameters, ACRT greatly decreases the radial solute segregation of the crystal, and even makes it disappear completely. However, it increases both the axial solute segregation and the radial one notably with bad wave parameters. An excellent single crystal could be gotten, of which a majority part is with no segregation, with ACRT-Bridgman method by adjusting both the ACRT wave parameters and the crystal growth control parameters, such as the initial temperature of the melt, the temperature gradient, and the crucible withdrawal rate, etc.

  16. Composition Dependence of Spectroscopic Properties of Er3+ Doped TeO2-WO3-ZnO Glasses

    Institute of Scientific and Technical Information of China (English)

    李家成; 李顺光; 胡和方; 干福熹

    2004-01-01

    Er3+-doped TeO2-WO3-ZnO glasses were prepared and the absorption spectra, emission spectra and fluorescence lifetimes were measured. With more TeO2 content in the glasses, the emission full width at half maximum (FWHM) increaseswhile the lifetime of the 4 I13/2 level of Er3+ decreases. The stimulated emission cross-section of Er3+ calculated by the McCumber theory is as large as 0.86pm2. The product of the FWHM and the emission cross-section σe of Er3+ in TeO2-WO3-ZnO glass is larger than those in other glasses, which indicates that the glasses are promising candidates for Er3+-doped broadband amplifiers. The Judd-Offelt parameter Ω6 shows close composition dependence of the 1.5 μm emission bandwidth. The more the TeO2 content is, the larger the values of Ω6 and FWHM.

  17. Study on optical nonlinearities of ZnO-Nb2O5-TeO2 glass with time-resolved four-wave mixing technique

    Institute of Scientific and Technical Information of China (English)

    Li Jiang(江丽); Shi'an Zhang(张诗按); Yufei Wang(王宇飞); Zhenrong Sun(孙真荣); Zugeng Wang(王祖赓); Jian Lin(林健); Wenhai Huang(黄文旵); Zhizhan Xu(徐至展); Ruxin Li(李儒新)

    2004-01-01

    We investigated nonlinear optical properties of ZnO-Nb2O5-TeO2 glass excited by a femtosecond laser with time-resolved four-wave mixing (FWM) technique. The unusual FWM signals were observed in samples with ZnO dopant. The mechanism for the optical nonlinearities was discussed.

  18. Properties of Type-II ZnTe/ZnSe Submonolayer Quantum Dots Studied via Excitonic Aharonov- Bohm Effect and Polarized Optical Spectroscopy

    Science.gov (United States)

    Ji, Haojie

    In this thesis I develop understanding of the fundamental physical and material properties of type-II ZnTe/ZnSe submonolayer quantum dots (QDs), grown via combination of molecular beam epitaxy (MBE) and migration enhanced epitaxy (MEE). I use magneto-photoluminescence, including excitonic Aharonov-Bohm (AB) effect and polarized optical spectroscopy as the primary tools in this work. I present previous studies as well as the background of optical and magneto-optical processes in semiconductor nanostructures and introduce the experimental methods in Chapters 1 - 3. In Chapter 4 I focus on the excitonic AB effect in the type-II QDs. I develop a lateral tightly-bound exciton model for ZnTe/ZnSe type-II QDs, using analytical methods and numerical calculations. This explained the magneto-PL observation and allowed for establishing the size and density of the QDs in each sample based on the results of PL and magneto-PL measurements. For samples with larger QDs, I observe behaviors that fall between properties of quantum-dot and quantum-well-like systems due to increased QD densities and their type-II nature. Finally, the decoherence mechanisms of the AB excitons are investigated via the temperature dependent studies of the magneto-PL. It is determined that the AB exciton decoherence is due to transport-like (acoustic phonon) scattering of the electrons moving in the ZnSe barriers, but with substantially smaller magnitude of electron-phonon coupling constant due to relatively strong electron-hole coupling within these type-II QDs. In Chapter 5 I discuss the results of circularly polarized magneto-PL measurements. A model with ultra-long spin-flip time of holes confined to submonolayer QDs is proposed. The g-factor of type-II excitons was extracted from the Zeeman splitting and the g-factor of electrons was obtained by fitting the temperature dependence of the degree of circular polarization (DCP), from which g-factor of holes confined within ZnTe QDs was found. It is shown

  19. Surface-Guided Core-Shell ZnSe@ZnTe Nanowires as Radial p-n Heterojunctions with Photovoltaic Behavior.

    Science.gov (United States)

    Oksenberg, Eitan; Martí-Sánchez, Sara; Popovitz-Biro, Ronit; Arbiol, Jordi; Joselevich, Ernesto

    2017-06-27

    The organization of nanowires on surfaces remains a major obstacle toward their large-scale integration into functional devices. Surface-material interactions have been used, with different materials and substrates, to guide horizontal nanowires during their growth into well-organized assemblies, but the only guided nanowire heterostructures reported so far are axial and not radial. Here, we demonstrate the guided growth of horizontal core-shell nanowires, specifically of ZnSe@ZnTe, with control over their crystal phase and crystallographic orientations. We exploit the directional control of the guided growth for the parallel production of multiple radial p-n heterojunctions and probe their optoelectronic properties. The devices exhibit a rectifying behavior with photovoltaic characteristics upon illumination. Guided nanowire heterostructures enable the bottom-up assembly of complex semiconductor structures with controlled electronic and optoelectronic properties.

  20. Contribution to the study of electronic structure of crystalline semiconductors (Si, Ge, GaAs, Gap, ZnTe, ZnSe

    Directory of Open Access Journals (Sweden)

    Bouhafs B.

    2012-06-01

    Full Text Available The band structure of semiconductors was described by several theorists since the Fifties. The main objective of the present paper is to do a comparative study between various families of semi-conductors IV (Si,Ge, III-V (GaAs, GaP and II-VI (ZnSe, ZnTe with both methods; tight Binding1 method and pseudo potential method2. This work enables us to understand as well as the mechanism of conduction process in these semiconductors and powers and limits of the above methods. The obtained results allow to conclude that both methods are in a good agreement to describe the morphology of band structures of the cited semiconductors. This encourages us to study in the future the electronic behaviour through the structure of bands for more complex systems such as the heterostructures.

  1. Two new ternary chalcogenides Ba{sub 2}ZnQ{sub 3} (Q = Se, Te) with chains of ZnQ{sub 4} tetrahedra. Syntheses, crystal structure, and optical and electronic properties

    Energy Technology Data Exchange (ETDEWEB)

    Prakash, Jai; Beard, Jessica; Malliakas, Christos D.; Ibers, James A. [Northwestern Univ., Evanston, IL (United States). Dept. of Chemistry; Mesbah, Adel [Northwestern Univ., Evanston, IL (United States). Dept. of Chemistry; ICSM, UMR 5257 CEA/CNRS/UM2/ENSCM, Bagnols-sur-Ceze (France); Rocca, Dario; Lebegue, Sebastien [Univ. de Lorraine, Vandoeuvre-les-Nancy (France). Lab. de Cristallographie, Resonance Magnetique et Modelisations (CRM2, UMR CNRS 7036)

    2016-08-01

    Single crystals of Ba{sub 2}ZnQ{sub 3} (Q = Se, Te) were obtained by solid-state reactions at 1173 K. These isostructural compounds crystallize in the K{sub 2}AgI{sub 3} structure type. The Zn atoms in this structure are coordinated to four Q atoms (2 Q1, 1 Q2, 1 Q3) and these form a distorted tetrahedron around each Zn atom. Each ZnQ{sub 4} tetrahedron shares two corners with neighboring ZnQ{sub 4} tetrahedra resulting in the formation of infinite chains of [ZnQ{sub 4}{sup 4-}] units. The absorption spectrum of a single crystal of Ba{sub 2}ZnTe{sub 3} shows an absorption edge at 2.10(2) eV, consistent with the dark-red color of the crystals. From DFT calculations Ba{sub 2}ZnSe{sub 3} and Ba{sub 2}ZnTe{sub 3} are found to be semiconductors with electronic band gaps of 2.6 and 1.9 eV, respectively.

  2. Cancer Cell Targeting Using Folic Acid/Anti-HER2 Antibody Conjugated Fluorescent CdSe/CdS/ZnS-MPA and CdTe-MSA Quantum Dots.

    Science.gov (United States)

    Singh, Gurpal; Kumar, Manoj; Soni, Udit; Arora, Vikas; Bansal, Vivek; Gupta, Dikshi; Bhat, Madhusudan; Dinda, Amit K; Sapra, Sameer; Singh, Harpal

    2015-12-01

    CdSe/CdS/ZnS and CdTe quantum dots (QDs) were synthesized by successive ion layer adsorption and reaction (SILAR) technique and direct aqueous synthesis respectively using thiol stabilizers. Synthesized CdSe/CdS/ZnS and CdTe QDs stabilized with 3-mercaptopropionic acid (MPA) and mercaptosuccinic acid (MSA) were used as fluorescent labels after conjugation with folic acid (FA) and anti-HER2 antibodies. Photoluminescence quantum yield of folated CdSe/CdS/ZnS-MPA and CdTe-MSA QDs was 59% and 77% than that of non-folated hydrophilic QDs. The folate receptor-mediated delivery of folic acid-conjugated CdTe-MSA and CdSe/CdS/ZnS-MPA QDs showed higher cellular internalization as observed by confocal laser scanning microscopic studies. Folated and non-folated CdTe-MSA QDs were highly toxic and exhibited only 10% cell viability as compared to > 80% cell viability with CdSe/CdS/ZnS-MPA QDs over the concentration ranging from 3.38 to 50 pmoles. Immunohistochemistry (IHC) results of human breast cancer tissue samples showed positive results with anti-HER2 antibody conjugated CdSe/CdS/ZnS-MPA QDs with better sensitivity and specificity as compared to conventional IHC analysis using diaminobenzedene staining.

  3. Theoretical study of the phase transformation of ZnSe{sub 0.5}Te{sub 0.5} alloy under pressure

    Energy Technology Data Exchange (ETDEWEB)

    Zhu, Yan [State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004 (China); College of Physics and Chemistry, Hebei Normal University of Science and Technology, Qinhuangdao 066004 (China); Zhang, Xinyu, E-mail: xyzhang@ysu.edu.cn [State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004 (China); Zhang, Suhong; Jing, Qin; Ma, Mingzhen; Liu, Riping [State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004 (China)

    2014-09-15

    The structural properties and pressure-induced solid–solid phase transitions of ternary alloy ZnSe{sub 0.5}Te{sub 0.5} have been investigated using first principles calculations. The sequence of the phase transition, structural parameters, relative volume changes, formation energies and electronic properties have been analyzed in detail. The results indicate that the cation–anion interaction plays an important role in the process of structural transition. Zn–Se bonds are more subject to applied pressure than Zn–Te bonds in the alloy. The different orders of phase transition between of ZnSe and ZnTe are caused mainly by the electronegativity difference of Se and Te.

  4. Preparation of Cd(Zn)Te and CuInSe sub 2 films and devices by a two-stage process

    Energy Technology Data Exchange (ETDEWEB)

    Basol, B.M.; Kapur, V.K. (International Solar Electric Technology (ISET), Inglewood, CA (USA))

    1991-05-01

    The two-stage process was used to prepare thin films of Cd(Zn)Te and CuInSe{sub 2}. The technique involves first depositing the elemental components of the compound onto a substrate in the form of thin stacked layers and then reacting these elemental components to obtain a thin film of the desired compound. While CdTe films grown on thin CdS layers have uniform stoichiometries and sharp interfaces with the underlying CdS layers, CdZnTe films deposited onto similar substrates give rise to diffused CdZnTe-CdS interfaces because of the reactive nature of zinc. In CuInSe{sub 2} processing, the nature of the reacted compound film strongly depends on the nature of the Cu-In layers. CdS/CuInSe{sub 2} device efficiencies are also influenced by the method of deposition for the CdS window layers. (orig.).

  5. Reconfigurable Ion Gating of 2H-MoTe2 Field-Effect Transistors Using Poly(ethylene oxide)-CsClO4 Solid Polymer Electrolyte.

    Science.gov (United States)

    Xu, Huilong; Fathipour, Sara; Kinder, Erich W; Seabaugh, Alan C; Fullerton-Shirey, Susan K

    2015-05-26

    Transition metal dichalcogenides are relevant for electronic devices owing to their sizable band gaps and absence of dangling bonds on their surfaces. For device development, a controllable method for doping these materials is essential. In this paper, we demonstrate an electrostatic gating method using a solid polymer electrolyte, poly(ethylene oxide) and CsClO4, on exfoliated, multilayer 2H-MoTe2. The electrolyte enables the device to be efficiently reconfigured between n- and p-channel operation with ON/OFF ratios of approximately 5 decades. Sheet carrier densities as high as 1.6 × 10(13) cm(-2) can be achieved because of a large electric double layer capacitance (measured as 4 μF/cm(2)). Further, we show that an in-plane electric field can be used to establish a cation/anion transition region between source and drain, forming a p-n junction in the 2H-MoTe2 channel. This junction is locked in place by decreasing the temperature of the device below the glass transition temperature of the electrolyte. The ideality factor of the p-n junction is 2.3, suggesting that the junction is recombination dominated.

  6. Optical and Recombination Losses in Thin Film Solar Cells Based on Heterojunctions n-ZnS (n-CdS / p-CdTe with Current Collecting Contacts ITO and ZnO

    Directory of Open Access Journals (Sweden)

    O.A. Dobrozhan

    2014-11-01

    Full Text Available The optical and recombination losses in auxiliary and absorbing layers of solar cells based on heterojunctions n-ZnS / p-CdTe and n-CdS / p-CdTe with current collecting front sublayers ITO and ZnO were determined. As a result, spectral dependence of light transmittance (T of solar cells, taking into account its reflections from the boundaries of the contacting materials and in case of absorption in the auxiliary layers of solar cells was calculated. The influence of optical and recombination losses in the solar cell structure ITO (ZnO / CdS (ZnS / CdTe on the short circuit current (Jsc and efficiency (η of solar cells with different thickness of the window layer CdS (ZnS (50-300 nm and constant current collecting layer (200 nm was investigated. It has been established that the greatest efficiency values (15,9-16,1% solar cells have the structure of ZnO / ZnS / CdTe at a concentration of uncompensated acceptors in the absorbent layer (Na – Nd = 1015-1017 cm – 3 and the window layer thickness of 50 nm.

  7. Signal modeling of charge sharing effect in simple pixelated CdZnTe detector

    Science.gov (United States)

    Kim, Jae Cheon; Kaye, William R.; He, Zhong

    2014-05-01

    In order to study the energy resolution degradation in 3D position-sensitive pixelated CdZnTe (CZT) detectors, a detailed detector system modeling package has been developed and used to analyze the detector performance. A 20 × 20 × 15 mm3 CZT crystal with an 11 × 11 simple-pixel anode array and a 1.72 mm pixel pitch was modeled. The VAS UM/TAT4 Application Specific Integrated Circuitry (ASIC) was used for signal read-out. Components of the simulation package include gamma-ray interactions with the CZT crystal, charge induction, electronic noise, pulse shaping, and ASIC triggering procedures. The charge induction model considers charge drift, trapping, diffusion, and sharing between pixels. This system model is used to determine the effects of electron cloud sharing, weighting potential non-uniformity, and weighting potential cross-talk which produce non-uniform signal responses for different gamma-ray interaction positions and ultimately degrade energy resolution. The effect of the decreased weighting potential underneath the gap between pixels on the total pulse amplitude of events has been studied. The transient signals induced by electron clouds collected near the gap between pixels may generate false signals, and the measured amplitude can be even greater than the photopeak. As the number of pixels that collect charge increases, the probability of side-neighbor events due to charge sharing significantly increases. If side-neighbor events are not corrected appropriately, the energy resolution of pixelated CZT detectors in multiple-pixel events degrades rapidly.

  8. Signal modeling of charge sharing effect in simple pixelated CdZnTe detector

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Jae C.; Kaye, William R.; He, Zhong [University of Michigan, Ann Arbor, MI (United States)

    2014-05-15

    In order to study the energy resolution degradation in 3D position-sensitive pixelated CdZnTe (CZT) detectors, a detailed detector system modeling package has been developed and used to analyze the detector performance. A 20 x 20 x 15 mm{sup 3} CZT crystal with an 11 x 11 simple-pixel anode array and a 1.72 mm pixel pitch was modeled. The VAS UM/TAT4 Application Specific Integrated Circuitry (ASIC) was used for signal read-out. Components of the simulation package include gamma-ray interactions with the CZT crystal, charge induction, electronic noise, pulse shaping, and ASIC triggering procedures. The charge induction model considers charge drift, trapping, diffusion, and sharing between pixels. This system model is used to determine the effects of electron cloud sharing, weighting potential non-uniformity, and weighting potential cross-talk which produce non-uniform signal responses for different gamma-ray interaction positions and ultimately degrade energy resolution. The effect of the decreased weighting potential underneath the gap between pixels on the total pulse amplitude of events has been studied. The transient signals induced by electron clouds collected near the gap between pixels may generate false signals, and the measured amplitude can be even greater than the photopeak. As the number of pixels that collect charge increases, the probability of side-neighbor events due to charge sharing significantly increases. If side-neighbor events are not corrected appropriately, the energy resolution of pixelated CZT detectors in multiple-pixel events degrades rapidly.

  9. Development of a simplified simulation model for performance characterization of a pixellated CdZnTe multimodality imaging system

    Energy Technology Data Exchange (ETDEWEB)

    Guerra, P; Santos, A [Departamento de IngenierIa Electronica, Universidad Politecnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid (Spain); Darambara, D G [Joint Department of Physics, Royal Marsden NHS Foundation Trust and The Institute of Cancer Research, Fulham Road, London SW3 6JJ (United Kingdom)], E-mail: pguerra@die.um.es

    2008-02-21

    Current requirements of molecular imaging lead to the complete integration of complementary modalities in a single hybrid imaging system to correlate function and structure. Among the various existing detector technologies, which can be implemented to integrate nuclear modalities (PET and/or single-photon emission computed tomography with x-rays (CT) and most probably with MR, pixellated wide bandgap room temperature semiconductor detectors, such as CdZnTe and/or CdTe, are promising candidates. This paper deals with the development of a simplified simulation model for pixellated semiconductor radiation detectors, as a first step towards the performance characterization of a multimodality imaging system based on CdZnTe. In particular, this work presents a simple computational model, based on a 1D approximate solution of the Schockley-Ramo theorem, and its integration into the Geant4 application for tomographic emission (GATE) platform in order to perform accurately and, therefore, improve the simulations of pixellated detectors in different configurations with a simultaneous cathode and anode pixel readout. The model presented here is successfully validated against an existing detailed finite element simulator, the multi-geometry simulation code, with respect to the charge induced at the anode, taking into consideration interpixel charge sharing and crosstalk, and to the detector charge induction efficiency. As a final point, the model provides estimated energy spectra and time resolution for {sup 57}Co and {sup 18}F sources obtained with the GATE code after the incorporation of the proposed model.

  10. Gamma spectrometric characterization of short cooling time nuclear spent fuels using hemispheric CdZnTe detectors

    CERN Document Server

    Lebrun, A; Szabó, J L; Arenas-Carrasco, J; Arlt, R; Dubreuil, A; Esmailpur-Kazerouni, K

    2000-01-01

    After years of cooling, nuclear spent fuel gamma emissions are mainly due to caesium isotopes which are emitters at 605, 662 and 796-801 keV. Extensive work has been done on such fuels using various CdTe or CdZnTe probes. When fuels have to be measured after short cooling time (during NPP outage) the spectrum is much more complex due to the important contributions of niobium and zirconium in the 700 keV range. For the first time in a nuclear power plant, four spent fuels of the Kozloduy VVER reactor no 4 were measured during outage, 37 days after shutdown of the reactor. In such conditions, good resolution is of particular interest, so a 20 mm sup 3 hemispheric crystal was used with a resolution better than 7 keV at 662 keV. This paper presents the experimental device and analyzes the results which show that CdZnTe commercially available detectors enabled us to perform a semi-quantitative determination of the burn-up after a short cooling time. In addition, it is discussed how a burn-up evolution code (CESAR)...

  11. Design and synthesis of highly luminescent near-infrared-emitting water-soluble CdTe/CdSe/ZnS core/shell/shell quantum dots.

    Science.gov (United States)

    Zhang, Wenjin; Chen, Guanjiao; Wang, Jian; Ye, Bang-Ce; Zhong, Xinhua

    2009-10-19

    Applications of water-dispersible near-infrared (NIR)-emitting quantum dots (QDs) have been hampered by their instability and low photoluminescence (PL) efficiencies. In this paper, water-soluble highly luminescent NIR-emitting QDs were developed through constructing CdTe/CdSe/ZnS core/shell/shell nanostructure. The CdTe/CdSe type-II structure yields the QDs with NIR emission. By varying the size of CdTe cores and the thickness of the CdSe shell, the emission wavelength of the obtained nanostructure can span from 540 to 825 nm. In addition, the passivation of the ZnS shell with a substantially wide bandgap confines the excitons within the CdTe/CdSe interface and isolates them from the solution environment and consequently improves the stability of the nanostructure, especially in aqueous media. An effective shell-coating route was developed for the preparation of CdTe/CdSe core/shell nanostructures by selecting capping reagents with a strong coordinating capacity and adopting a low temperature for shell deposition. An additional ZnS shell was deposited around the outer layer of CdTe/CdSe QDs to form the core/shell/shell nanostructure through the decomposition of single molecular precursor zinc diethyldithiocarbamate in the crude CdTe/CdSe reaction solution. The water solubilization of the initially oil-soluble CdTe/CdSe/ZnS QDs was achieved through ligand replacement by 3-mercaptopropionic acid. The as-prepared water-soluble CdTe/CdSe/ZnS QDs possess PL quantum yields as high as 84% in aqueous media, which is one of the best results for the luminescent semiconductor nanocrystals.

  12. MnTe semiconductor-sensitized boron-doped TiO2 and ZnO photoelectrodes for solar cell applications.

    Science.gov (United States)

    Tubtimtae, Auttasit; Arthayakul, Khanittha; Teekwang, Bussayanee; Hongsith, Kritsada; Choopun, Supab

    2013-09-01

    We report a new tailoring MnTe semiconductor-sensitized solar cells (MnTe SSCs) using successive ionic layer adsorption and reaction (SILAR) technique. X-ray diffraction and SAED patterns reveal the orthorhombic MnTe and cubic MnTe2 phases were grown on boron-doped TiO2 and ZnO nanoparticles. The diameter of MnTe NPs ranged from 15 to 30nm on both B-doped metal oxide structures. The energy gaps of metal oxide become narrower after boron doping, which have an advantage for enhancing the light absorption from UV to visible region. Also, the energy gap of MnTe NPs on B-doped metal oxide was determined ~1.27-1.30eV. The best power conversion efficiency (η) of 0.033% and 0.030% yielded from B-doped TiO2/MnTe(7) and B-doped ZnO/MnTe(9), respectively. The reduction in power conversion efficiency by 103% and 91% was due to the absence of boron doping into TiO2 and ZnO nanostructures, respectively.

  13. Facile synthesis and photoluminescence of near-infrared-emitting CdTe(x)Se(1-x) and CdTe(x)Se(1-x)/Cd(y)Zn(-1-y)S quantum dots.

    Science.gov (United States)

    Zhang, Ruili; Wang, Jianrong; Yang, Ping

    2014-03-01

    High-quality colloidal photoluminescent (PL) CdTe(x)Se(1-x) quantum dots (QDs) with gradient distribution of components, consisting of Te-rich inner cores and Se-rich outer shells, were synthesized via a facile organic method using stearic acid as a capping agent. The transmission electron microscopy observation and X-ray diffraction analysis indicated that the CdTe(x)Se(1-x) QDs revealed a "dot" shaped morphology and exhibited a zinc-blende structure which located between those of bulk CdTe and CdSe (with the lattice parameters between those of bulk CdTe and CdSe). The ternary CdTe(x)Se(1-x) QDs were emitting in the red to near-infrared (NIR) range. In order to enhance the PL properties and reduce the sensitivity to oxidation of CdTe-based QDs, the CdTe(x)Se(1-x) QDs were coated with Cd(y)Zn(1-y)S multishells by using different growth kinetics of CdS and ZnS. The coated QDs exhibited a controlled red shift of PL compared with the initial CdTe(x)Se(1-x) cores and revealed much improved PL intensity. Because of thier tunable emission from red to NIR, these composite QDs open new possibilities in band gap engineering and in developing NIR fluorescent probes for biological imaging and detection.

  14. Structure and properties of ZnO-B{sub 2}O{sub 3}-P{sub 2}O{sub 5}-TeO{sub 2} glasses

    Energy Technology Data Exchange (ETDEWEB)

    Mosner, Petr, E-mail: petr.mosner@upce.cz [Department of General and Inorganic Chemistry, University of Pardubice, Faculty of Chemical Technology, 53210 Pardubice (Czech Republic); Vosejpkova, Katerina; Koudelka, Ladislav [Department of General and Inorganic Chemistry, University of Pardubice, Faculty of Chemical Technology, 53210 Pardubice (Czech Republic); Montagne, Lionel; Revel, Bertrand [Unite de Catalyse et de Chimie du Solide - UCCS, Univ Lille Nord de France, F-59000, CNRS UMR 8181, USTL F-59655, ENSCL F-59652, Villeneuve d' Ascq (France)

    2010-11-01

    Zinc borophosphate glasses doped with TeO{sub 2} were studied in the compositional series (100 - x)[0.5ZnO-0.1B{sub 2}O{sub 3}-0.4P{sub 2}O{sub 5}]-xTeO{sub 2} in a broad concentration range of x = 0-80 mol% TeO{sub 2}. The structure of the glasses was studied by Raman and IR spectroscopy and by {sup 31}P and {sup 11}B MAS NMR spectroscopy. According to the Raman and IR spectra, TeO{sub 2} is incorporated in the structural network in the form of TeO{sub 3}, TeO{sub 3+1} and TeO{sub 4} structural units. The ratio of TeO{sub 4}/TeO{sub 3} increases with increasing TeO{sub 2} content in the glasses. The incorporation of TeO{sub x} units into the glass network is associated with the depolymerisation of phosphate chains, as revealed by Raman spectroscopy. The incorporation of TeO{sub 2} modifies also the coordination of boron atoms, where B(OP){sub 4} structural units are gradually replaced by B(OP){sub 4-n}(OTe){sub n} units. The addition of TeO{sub 2} to the parent zinc borophosphate glass results in a decrease of glass transition temperature associated with the replacement of stronger P-O and B-O bonds by weaker Te-O bonds. Chemical durability of glasses reveals a minimum at the glass containing 10 mol% TeO{sub 2}, but with further additions of TeO{sub 2} it improves and the glasses with a high TeO{sub 2} content reveal better durability than the parent zinc borophosphate glass.

  15. Effect of thickness on physical properties of electron beam vacuum evaporated CdZnTe thin films for tandem solar cells

    Science.gov (United States)

    Chander, Subhash; Dhaka, M. S.

    2016-10-01

    The thickness and physical properties of electron beam vacuum evaporated CdZnTe thin films have been optimized in the present work. The films of thickness 300 nm and 400 nm were deposited on ITO coated glass substrates and subjected to different characterization tools like X-ray diffraction (XRD), UV-Vis spectrophotometer, source meter and scanning electron microscopy (SEM) to investigate the structural, optical, electrical and surface morphological properties respectively. The XRD results show that the as-deposited CdZnTe thin films have zinc blende cubic structure and polycrystalline in nature with preferred orientation (111). Different structural parameters are also evaluated and discussed. The optical study reveals that the optical transition is found to be direct and energy band gap is decreased for higher thickness. The transmittance is found to increase with thickness and red shift observed which is suitable for CdZnTe films as an absorber layer in tandem solar cells. The current-voltage characteristics of deposited films show linear behavior in both forward and reverse directions as well as the conductivity is increased for higher film thickness. The SEM studies show that the as-deposited CdZnTe thin films are found to be homogeneous, uniform, small circle-shaped grains and free from crystal defects. The experimental results confirm that the film thickness plays an important role to optimize the physical properties of CdZnTe thin films for tandem solar cell applications as an absorber layer.

  16. Effective improvement in optical properties of colloidal CdTe@ZnS quantum dots synthesized from aqueous solution

    Science.gov (United States)

    Wang, Yongbo; Si, Boni; Lu, Siwu; Ma, Xuan; Liu, Enzhou; Fan, Jun; Li, Xinghua; Hu, Xiaoyun

    2016-09-01

    Efficient synthesis of high-quality quantum dots (QDs) with excellent optical properties by aqueous synthesis is still of great significance for extended optical applications. Herein we highlight the advantages in optical properties of colloidal CdTe@ZnS QDs prepared by a facile and highly effective aqueous synthesis method. These achievements were realized by delicate manipulation of the conditions involved in nucleation and the growth process. Transmission electron microscopy (TEM) images indicated the QDs were uniform size and well dispersible. The emission peaks of the as-prepared QDs could shift from 496 to 698 nm with narrow full width at half maximum (FWHM), and the corresponding fluorescent color changed from green to red. Moreover, the emission could even reach to the near-infrared (NIR) region (706-796 nm) by extending the reaction time. The highest photoluminescence (PL) quantum yield (QY) of the QDs could reach to 60%, and the average of FWHM was about 55 nm. To address the problem of wide size-distribution in PL QY decrease and FWHM broadening, the colloids of QDs prepared at long reaction time (above 3 h) were centrifuged (12 000 r min-1). In addition, the assessment of QD cytotoxicity indicated the CdTe@ZnS QDs were much less cytotoxic and showed good biocompatibility. Compared with organic synthesis, our aqueous synthesis of QDs could be carried out efficiently on a large scale and showed good batch-to-batch reproducibility. The as-prepared CdTe@ZnS QDs exhibited excellent optical properties and hold a good potential to be applied in optoelectronic and biological applications.

  17. Flexible photodiodes constructed with CdTe nanoparticle thin films and single ZnO nanowires on plastics.

    Science.gov (United States)

    Kwak, Kiyeol; Cho, Kyoungah; Kim, Sangsig

    2011-10-14

    We construct a flexible pn heterostructured photodiode using a CdTe nanoparticle thin film and a single ZnO nanowire (NW) on a plastic substrate. The photocurrent characteristics of the flexible photodiode are examined under illumination with 325 nm wavelength light and the photocurrent efficiencies at bias voltages of ± 2.5 V are estimated to be 8.0 and 2.1 µA W(-1) under forward and reverse bias conditions, respectively. The photocurrent generation of the pn heterostructured photodiode is dominantly associated with the transport of the photogenerated charge carriers in the single ZnO NW. Furthermore, the operations of our flexible photodiode are investigated in the upwardly and downwardly bent states, as well as in the flat state.

  18. Self-assembled formation and transformation of In/CdZnTe(110) nano-rings into camel-humps

    Energy Technology Data Exchange (ETDEWEB)

    Cohen-Taguri, G. [School of Mechanical Engineering and Materials and Nanotechnologies Program, Faculty of Engineering, Tel Aviv University, Tel Aviv 69978 (Israel); Ruzin, A. [School of Electrical Engineering, Faculty of Engineering, Tel Aviv University, Tel Aviv 69978 (Israel); Goldfarb, I. [School of Mechanical Engineering and Materials and Nanotechnologies Program, Faculty of Engineering, Tel Aviv University, Tel Aviv 69978 (Israel); Research Center for Nanoscience and Nanotechnology, Tel Aviv University, Tel Aviv 69978 (Israel)

    2012-05-21

    We used in situ scanning tunneling microscopy to monitor in real time the formation of nano-rings at the molecular beam epitaxially grown In/CdZnTe(110) surface, and Auger electron spectroscopy to explore the corresponding compositional changes. In-diffusion of In and segregation of Cd to the surface in course of annealing lead to a formation of elliptically distorted nano-rings, elongated along the fast [110] diffusion direction. Exacerbated diffusion anisotropy in the liquid state, at temperatures above the melting point of In, further distorts the nano-rings into a camel-hump shape.

  19. Vibrational and thermal properties of ZnX (X=S, Se, Te): Density functional theory versus experiment

    Energy Technology Data Exchange (ETDEWEB)

    Kremer, Reinhard K.; Cardona, Manuel; Lauck, Robert; Siegle, Gisela [Max-Planck-Institut fuer Festkoerperforschung, Heisenbergstrasse 1, D-70569 Stuttgart (Germany); Romero, Aldo H. [Departamento de Materiales, Unidad Queretaro, CINVESTAV, Queretaro 76230 (Mexico); Schindler, Alexander [NETZSCH-Geraetebau GmbH, Wittelsbacherstrasse 42, D-95100 Selb (Germany)

    2012-07-01

    We calculated the phonon dispersion relations of ZnX (X=S,Se,Te) employing up-to-date ab initio codes. The dispersion relations have been used to evaluate the temperature dependence of the respective specific heats of crystals with varied isotopic compositions. These results are compared with measurements performed on crystals down to 2 K. The calculated and measured data are generally in excellent agreement. Trends in the phonon dispersion relations and the corresponding densities of states for the zinc chalcogenide series of zincblende type materials are discussed.

  20. Influence of the thickness of a crystal on the electrical characteristics of Cd(Zn)Te detectors

    Energy Technology Data Exchange (ETDEWEB)

    Sklyarchuk, V. [Chernivtsi National Univ. (Ukraine); Fochuk, p. [Chernivtsi National Univ. (Ukraine); Rarenko, I. [Chernivtsi National Univ. (Ukraine); Zakharuk, Z. [Chernivtsi National Univ. (Ukraine); Sklyarchuk, O. F. [Chernivtsi National Univ. (Ukraine); Bolotnikov, A. E. [Brookhaven National Lab. (BNL), Upton, NY (United States); James, R. B. [Brookhaven National Lab. (BNL), Upton, NY (United States)

    2015-08-01

    We studied the electrical characteristics of Cd(Zn)Te detectors with rectifying contacts and varying thicknesses, and established that their geometrical dimensions affect the measured electrical properties. We found that the maximum value of the operating-bias voltage and the electric field in the detector for acceptable values of the dark current can be achieved when the crystal has an optimum thickness. This finding is due to the combined effect of generation-recombination in the space-charge region and space-charge limited currents (SCLC).

  1. Growth of Cd0.96Zn0.04Te single crystals by vapor phase gas transport method

    Directory of Open Access Journals (Sweden)

    S. H. Tabatabai Yazdi

    2006-03-01

    Full Text Available   Cd0.96Zn0.04Te crystals were grown using vapor phase gas transport method (VPGT. The results show that dendritic crystals with grain size up to 3.5 mm can be grown with this technique. X-ray diffraction and Laue back-reflection patterns show that dendritic crystals are single-phase, whose single crystal grains are randomly oriented with respect to the gas-transport axis. Electrical measurements, carried out using Van der Pauw method, show that the as-grown crystals have resistivity of about 104 Ω cm and n-type conductivity.

  2. CdTe/ZnS量子点荧光可逆调控研究ctDNA与吡柔比星的相互作用%Reversible control of fluorescence on CdTe/ZnS quantum dots using the interaction between pirarubicin and ctDNA

    Institute of Scientific and Technical Information of China (English)

    闫曙光; 刘绍璞; 何佑秋

    2011-01-01

    Glutathione (GSH)-capped CdTe quantum dots (GSH-CdTe/ZnS QDs) were synthesized in aqueous solution. QD particle sizes'and morphological characteristics were studied by atomic force microscope. The results indicate that a narrow size distribution and good dispersivity were obtained. Fluorescence (FL) of GSH-CdTe/ZnS QDs can be effectively quenched by binding of pirarubicin (THP) on their surfaces, enabling the photoinduced electron transfer (PET) process from the QDs to THP. Subsequent addition of ctDNA restored FL intensity to the QDs as THP dissociated from the surface and embedded into the ctDNA double helix structure, thus preventing PET. Reversible control of FL was realized for anthraquinone anticancer drugs through induced FL quenching and subsequent ctDNA-induced FL restoration for GSH-CdTe/ZnS QDs. The reaction of GSH-CdTe/ZnS QDs-THP-ctDNA is discussed on the basis of FL, resonance Rayleigh scattering and ultraviolet-visible absorption spectra and the spectroscopic method developed was used to investigate the interaction between anthraquinone anticancer drugs and DNA.%水相合成了谷胱甘肽修饰的CdTe/ZnS量子点(GSH-CdTe/ZnS QDs).从原子力显徽镜照片可以看出,合成的核壳型GSH-CdTe/ZnS QDs具有良好的分散性.当吡柔比星与GSH-CdTe/ZnS QDs相互作用时,吡柔比星吸附在GSH-CdTe/ZnS QDs的表面,通过光诱导电子转移的方式猝灭GSH-CdTe/ZnS QDs的荧光.然后向GSH-CdTe/ZnS QDs-吡柔比星体系中加入ctDNA,吡柔比星从GSH-CdTe/ZnS QDs表面脱落后嵌入ctDNA双螺旋结构中,光诱导电子转移过程被阻断,GSH-CdTe/ZnS QDs的荧光恢复.根据GSH-CdTe/ZnSQDs荧光的猝灭和恢复,实现了量子点荧光的可逆调控.结合共振瑞利散射和紫外吸收光谱,讨论了GSH-CdTe/ZnS QDs吡柔比星-ctDNA的相互作用机理,建立了一种研究蒽醌类抗癌药物与核酸相互作用的光谱方法.

  3. Influence of Zn2+ doping on the crystal structure and optical-electrical properties of CdTe thin films

    Science.gov (United States)

    Kavitha, R.; Sakthivel, K.

    2015-10-01

    The present study reports the synthesis of Cd1-xZnxTe (x = 0, 0.025, 0.050, 0.075 and 0.100) nanocrystalline thin film through a simple two step method. In the first step fine nanoparticles of Cd1-xZnxTe was prepared by solvothermal microwave irradiation (SMI) technique and then deposited as thin film using dip-coating technique. X-ray diffraction study showed that films are polycrystalline with cubic phase, which are preferentially oriented along the (1 1 1) direction. No impurity phase was observed in the XRD pattern even after higher concentration of doping (x = 0.100) of Zn. FESEM study revealed that the films are homogeneous without cracks and pinholes. TEM micrographs revealed the particles are slightly agglomerated and lesser than 25 nm. The optical absorption study revealed that pure and doped CdTe films possess a direct band gap material with bandgap values between 2.39 and 2.63 eV (±0.02 eV). The values of optical bandgap increase with an increase in dopant (Zn) concentration from x = 0.025 to 0.10. The pure cadmium telluride (CdTe) nanocrystalline film shows a strong green emission peak centered at about 525 nm. The emission peaks of Cd1-xZnxTe nanocrystalline films are red shifted from 525 nm to 611 nm according to the dopant (Zn2+) concentration. The grains in the prepared films are uniformly distributed, which was confirmed by narrow full width at half maximum (FWHM) of the emission peaks (40-65 nm). The DC conductivity has increased by 1.25 and 4 orders as the concentration of dopant increases from x = 0.025 to 0.10 at room temperature (30 °C) and 150 °C respectively. The higher conductivity value is underpinned by the smaller activation energy value and is explained by thermionic emission mechanism.

  4. Synthesis of highly luminescent and biocompatible CdTe/CdS/ZnS quantum dots using microwave irradiation: a comparative study of different ligands.

    Science.gov (United States)

    He, Hua; Sun, Xing; Wang, Xiaojuan; Xu, Hai

    2014-11-01

    We compared the effects of several ligands frequently used in aqueous synthesis, including L-cysteine, L-cysteine hydrochloride, N-acetyl-L-cysteine (NAC), glutathione and 3-mercaptopropionic acid, for microwave synthesis of CdTe quantum dots (QDs) in a sealed vessel with varied temperatures and times, and then developed a rapid microwave-assisted protocol for preparing highly luminescent, photostable and biocompatible CdTe/CdS/ZnS core-multishell QDs. The effects of molecular structures of these ligands on QD synthesis under high temperatures were explored. Among these ligands, NAC was found to be the optimal ligand in terms of the optical properties of resultant QDs and reaction conditions. The emission wavelength of NAC-capped CdTe QDs could reach 700 nm in 5 min by controlling the reaction temperature, and the resultant CdTe/CdS/ZnS core-multishell QDs could achieve the highest quantum yields up to 74% with robust photostability. In addition, the effects of temperature, growth time and shell-precursor ratio on shell growth were examined. Finally, cell culturing indicated the low cytotoxicity of CdTe/CdS/ZnS core-multishell QDs as compared to CdTe and CdTe/CdS QDs, suggesting their high potential for applications in biomedical imaging and diagnostics.

  5. COMPACT CdZnTe-BASED GAMMA CAMERA FOR PROSTATE CANCER IMAGING

    Energy Technology Data Exchange (ETDEWEB)

    CUI, Y.; LALL, T.; TSUI, B.; YU, J.; MAHLER, G.; BOLOTNIKOV, A.; VASKA, P.; DeGERONIMO, G.; O' CONNOR, P.; MEINKEN, G.; JOYAL, J.; BARRETT, J.; CAMARDA, G.; HOSSAIN, A.; KIM, K.H.; YANG, G.; POMPER, M.; CHO, S.; WEISMAN, K.; SEO, Y.; BABICH, J.; LaFRANCE, N.; AND JAMES, R.B.

    2011-10-23

    In this paper, we discuss the design of a compact gamma camera for high-resolution prostate cancer imaging using Cadmium Zinc Telluride (CdZnTe or CZT) radiation detectors. Prostate cancer is a common disease in men. Nowadays, a blood test measuring the level of prostate specific antigen (PSA) is widely used for screening for the disease in males over 50, followed by (ultrasound) imaging-guided biopsy. However, PSA tests have a high false-positive rate and ultrasound-guided biopsy has a high likelihood of missing small cancerous tissues. Commercial methods of nuclear medical imaging, e.g. PET and SPECT, can functionally image the organs, and potentially find cancer tissues at early stages, but their applications in diagnosing prostate cancer has been limited by the smallness of the prostate gland and the long working distance between the organ and the detectors comprising these imaging systems. CZT is a semiconductor material with wide band-gap and relatively high electron mobility, and thus can operate at room temperature without additional cooling. CZT detectors are photon-electron direct-conversion devices, thus offering high energy-resolution in detecting gamma rays, enabling energy-resolved imaging, and reducing the background of Compton-scattering events. In addition, CZT material has high stopping power for gamma rays; for medical imaging, a few-mm-thick CZT material provides adequate detection efficiency for many SPECT radiotracers. Because of these advantages, CZT detectors are becoming popular for several SPECT medical-imaging applications. Most recently, we designed a compact gamma camera using CZT detectors coupled to an application-specific-integrated-circuit (ASIC). This camera functions as a trans-rectal probe to image the prostate gland from a distance of only 1-5 cm, thus offering higher detection efficiency and higher spatial resolution. Hence, it potentially can detect prostate cancers at their early stages. The performance tests of this camera

  6. Compact CdZnTe-based gamma camera for prostate cancer imaging

    Science.gov (United States)

    Cui, Yonggang; Lall, Terry; Tsui, Benjamin; Yu, Jianhua; Mahler, George; Bolotnikov, Aleksey; Vaska, Paul; De Geronimo, Gianluigi; O'Connor, Paul; Meinken, George; Joyal, John; Barrett, John; Camarda, Giuseppe; Hossain, Anwar; Kim, Ki Hyun; Yang, Ge; Pomper, Marty; Cho, Steve; Weisman, Ken; Seo, Youngho; Babich, John; LaFrance, Norman; James, Ralph B.

    2011-06-01

    In this paper, we discuss the design of a compact gamma camera for high-resolution prostate cancer imaging using Cadmium Zinc Telluride (CdZnTe or CZT) radiation detectors. Prostate cancer is a common disease in men. Nowadays, a blood test measuring the level of prostate specific antigen (PSA) is widely used for screening for the disease in males over 50, followed by (ultrasound) imaging-guided biopsy. However, PSA tests have a high falsepositive rate and ultrasound-guided biopsy has a high likelihood of missing small cancerous tissues. Commercial methods of nuclear medical imaging, e.g. PET and SPECT, can functionally image the organs, and potentially find cancer tissues at early stages, but their applications in diagnosing prostate cancer has been limited by the smallness of the prostate gland and the long working distance between the organ and the detectors comprising these imaging systems. CZT is a semiconductor material with wide band-gap and relatively high electron mobility, and thus can operate at room temperature without additional cooling. CZT detectors are photon-electron direct-conversion devices, thus offering high energy-resolution in detecting gamma rays, enabling energy-resolved imaging, and reducing the background of Compton-scattering events. In addition, CZT material has high stopping power for gamma rays; for medical imaging, a few-mm-thick CZT material provides adequate detection efficiency for many SPECT radiotracers. Because of these advantages, CZT detectors are becoming popular for several SPECT medical-imaging applications. Most recently, we designed a compact gamma camera using CZT detectors coupled to an application-specific-integratedcircuit (ASIC). This camera functions as a trans-rectal probe to image the prostate gland from a distance of only 1-5 cm, thus offering higher detection efficiency and higher spatial resolution. Hence, it potentially can detect prostate cancers at their early stages. The performance tests of this camera

  7. Contamination of terrestrial gastropods Helix aspersa maxima with {sup 137}Cs, {sup 85}Sr, {sup 133}Ba and {sup 123m}Te by direct and trophic pathways

    Energy Technology Data Exchange (ETDEWEB)

    Madoz-Escande, C.; Querrec, N.; Bonhomme, T.; Poncet-Bonnard, D. [CEA Cadarache (DEI/SECRE/LRE), Laboratory of Radioecology and Ecotoxicology, Institute for Radioprotection and Nuclear Safety, 13 - Saint-Paul-lez-Durance (France)

    2004-07-01

    Contaminations of terrestrial gastropod Helix aspersa Maxima by direct deposition or labelled food ingestion of {sup 137}Cs, {sup 85}Sr, {sup 133}Ba and {sup 123m}Te were carried out in laboratory conditions. This study was performed to compare the two pathways of contamination: direct and trophic in terms of individual mortality and, radionuclide uptake, depuration and tissular distribution. A first group of 30 snails (2-year old) was exposed to radioactive aerosols during a twenty-hour period. These aerosols were supposed to be representative of those produced during a nuclear accident occurring on a PWR. A second group of 40 snails (same ages) was submitted to twice-a-week ingestion of food during 10 days (flour at a feeding rate of about 0,2 g) contaminated by these same aerosols. During the 21 days observation period, comparison among the two groups and a reference group (not contaminated by radionuclides) was performed. No significant difference between the three groups was observed neither on the growth nor on the mortality. One day after the deposit, the cesium was the most bioavailable element, distributed homogeneously within the whole body (from 15 to 25% of total Cs respectively in shell and muscle). The strontium accumulated in the shell (about 70%). The barium was found in the muscle (20%) and the shell (65%). Tellurium was mainly present in the shell (70%) and in digestive gland (20%), Later, this element was mostly present in faeces. As regards the contamination by ingestion, it was mainly accumulated in digestive gland. (author)

  8. X-ray diffraction study on pressure-induced phase transformations and the equation of state of ZnGa{sub 2}Te{sub 4}

    Energy Technology Data Exchange (ETDEWEB)

    Errandonea, D., E-mail: daniel.errandonea@uv.es [Departamento de Física Aplicada-ICMUV, MALTA Consolider Team, Universidad de Valencia, Edificio de Investigación, C/Dr. Moliner 50, Burjassot, 46100 Valencia (Spain); Kumar, R. S. [High Pressure Science and Engineering Center, Department of Physics and Astronomy, University of Nevada Las Vegas, 4505 Maryland Parkway, Las Vegas, Nevada 89154-4002 (United States); Gomis, O. [Centro de Tecnologías Físicas: Acústica, Materiales y Astrofísica, MALTA Consolider Team, Universitat Politècnica de València, 46022 València (Spain); Manjón, F. J. [Instituto de Diseño para la Fabricación y Producción Automatizada, MALTA Consolider Team, Universitat Politècnica de València, 46022 València (Spain); Ursaki, V. V.; Tiginyanu, I. M. [Institute of Applied Physics, Academy of Sciences of Moldova, 2028 Chisinau (Moldova, Republic of)

    2013-12-21

    We report on high-pressure x-ray diffraction measurements up to 19.8 GPa in zinc digallium telluride (ZnGa{sub 2}Te{sub 4}) at room temperature. An irreversible structural phase transition takes place at pressures above 12.1 GPa and upon decompression a third polymorph of ZnGa{sub 2}Te{sub 4} was recovered as a metastable phase at pressures below 2.9 GPa. Rietveld refinements were carried out for the three detected polymorphs, being their possible crystal structures reported. The axial compressibilities for the low-pressure phase of ZnGa{sub 2}Te{sub 4} have been determined as well as the equation of state of the low- and high-pressure phases. The reported results are compared with those available in the literature for related compounds. Pressure-induced coordination changes and transition mechanisms are also discussed.

  9. Point Defects in Pb-, Bi-, and In-Doped CdZnTe Detectors: Deep-Level Transient Spectroscopy (DLTS) Measurements

    Science.gov (United States)

    Gul, R.; Keeter, K.; Rodriguez, R.; Bolotnikov, A. E.; Hossain, A.; Camarda, G. S.; Kim, K. H.; Yang, G.; Cui, Y.; Carcelen, V.; Franc, J.; Li, Z.; James, R. B.

    2012-03-01

    We studied, by current deep-level transient spectroscopy (I-DLTS), point defects induced in CdZnTe detectors by three dopants: Pb, Bi, and In. Pb-doped CdZnTe detectors have a new acceptor trap at around 0.48 eV. The absence of a VCd trap suggests that all Cd vacancies are compensated by Pb interstitials after they form a deep-acceptor complex [[PbCd]+-V{Cd/2-}]-. Bi-doped CdZnTe detectors had two distinct traps: a shallow trap at around 36 meV and a deep donor trap at around 0.82 eV. In detectors doped with In, we noted three well-known traps: two acceptor levels at around 0.18 eV (A-centers) and 0.31 eV (VCd), and a deep trap at around 1.1 eV.

  10. Long-Term Stable Surface Treatments on CdTe and CdZnTe Radiation Detectors

    Science.gov (United States)

    Pekarek, Jakub; Belas, Eduard; Zazvorka, Jakub

    2017-04-01

    The spectral resolution and charge collection efficiency (CCE) of cadmium telluride (CdTe) and cadmium zinc telluride (CZT) room-temperature x-ray and gamma-ray detectors are often limited by high surface leakage current due to conducting surface species created during detector fabrication. Surface treatments play a major role in reduction of this surface leakage current. The effect of various types of surface etching and passivation on the leakage current and thereby the spectral energy resolution, CCE, and internal electric field profile of CdTe/CZT detectors has been studied. The main aim of this work is preparation of long-term stable detectors with strongly reduced leakage current. The time stability of the current-voltage characteristic and spectral resolution was investigated during 21 days and 1 year, respectively, after performing surface treatments. Our results suggest that the optimal detector preparation method is chemomechanical polishing in bromine-ethylene glycol solution followed by chemical etching in bromine-methanol solution then surface passivation in potassium hydroxide or ammonium fluoride (NH4F/H2O2). Detectors prepared using this optimal treatment exhibited low leakage current, high spectral resolution, and long-term stability compared with those subjected to other surface preparation methods.

  11. Long-Term Stable Surface Treatments on CdTe and CdZnTe Radiation Detectors

    Science.gov (United States)

    Pekarek, Jakub; Belas, Eduard; Zazvorka, Jakub

    2016-12-01

    The spectral resolution and charge collection efficiency (CCE) of cadmium telluride (CdTe) and cadmium zinc telluride (CZT) room-temperature x-ray and gamma-ray detectors are often limited by high surface leakage current due to conducting surface species created during detector fabrication. Surface treatments play a major role in reduction of this surface leakage current. The effect of various types of surface etching and passivation on the leakage current and thereby the spectral energy resolution, CCE, and internal electric field profile of CdTe/CZT detectors has been studied. The main aim of this work is preparation of long-term stable detectors with strongly reduced leakage current. The time stability of the current-voltage characteristic and spectral resolution was investigated during 21 days and 1 year, respectively, after performing surface treatments. Our results suggest that the optimal detector preparation method is chemomechanical polishing in bromine-ethylene glycol solution followed by chemical etching in bromine-methanol solution then surface passivation in potassium hydroxide or ammonium fluoride (NH4F/H2O2). Detectors prepared using this optimal treatment exhibited low leakage current, high spectral resolution, and long-term stability compared with those subjected to other surface preparation methods.

  12. Atomistic tight-binding theory of excitonic splitting energies in CdX(X = Se, S and Te)/ZnS core/shell nanocrystals

    Science.gov (United States)

    Sukkabot, Worasak; Pinsook, Udomsilp

    2017-01-01

    Using the atomistic tight-binding theory (TB) and a configuration interaction description (CI), we numerically compute the excitonic splitting of CdX(X = Se, S and Te)/ZnS core/shell nanocrystals with the objective to explain how types of the core materials and growth shell thickness can provide the detailed manipulation of the dark-dark (DD), dark-bright (DB) and bright-bright (BB) excitonic splitting, beneficial for the active application of quantum information. To analyze the splitting of the excitonic states, the optical band gaps, ground-state wave function overlaps and atomistic electron-hole interactions tend to be numerically demonstrated. Based on the atomistic computations, the single-particle and excitonic gaps are mainly reduced with the increasing ZnS shell thickness owing to the quantum confinement. In the range of the higher to lower energies, the order of the single-particle gaps is CdSe/ZnS, CdS/ZnS and CdTe/ZnS core/shell nanocrystals, while one of the excitonic gaps is CdS/ZnS, CdSe/ZnS and CdTe/ZnS core/shell nanocrystals because of the atomistic electron-hole interaction. The strongest electron-hole interactions are mainly observed in CdSe/ZnS core/shell nanocrystals. In addition, the computational results underline that the energies of the dark-dark (DD), dark-bright (DB) and bright-bright (BB) excitonic splitting are generally reduced with the increasing ZnS growth shell thickness as described by the trend of the electron-hole exchange interaction. The high-to-low splitting of the excitonic states is demonstrated in CdSe/ZnS, CdTe/ZnS and CdS/ZnS core/shell nanocrystals because of the fashion in the electron-hole exchange interaction and overlaps of the electron-hole wave functions. As the resulting calculations, it is expected that CdS/ZnS core/shell nanocrystals are the best candidates to be the source of entangled photons. Finally, the comprehensive information on the excitonic splitting can enable the use of suitable core

  13. Rich structural chemistry in new alkali metal yttrium tellurites: three-dimensional frameworks of NaYTe4O10, KY(TeO3)2, RbY(TeO3)2, and a novel variant of hexagonal tungsten bronze, CsYTe3O8.

    Science.gov (United States)

    Kim, Youngkwon; Lee, Dong Woo; Ok, Kang Min

    2015-01-05

    Pure polycrystalline phases and single crystals of four new quaternary alkali metal yttrium tellurites, NaYTe4O10, KY(TeO3)2, RbY(TeO3)2, and CsYTe3O8, have been prepared by solid-state and hydrothermal reactions using A2CO3 (A = Na, K, Rb, and Cs), Y(NO3)3·6H2O, Y2O3, and TeO2 as starting reagents. X-ray diffraction analyses suggest that NaYTe4O10 exhibits a highly symmetric three-dimensional (3D) framework consisting of YO8 square antiprisms and chains of TeO4 polyhedra. Within the framework, six- (6-) and eight-membered ring (8-MR) channels are observed. KY(TeO3)2 and RbY(TeO3)2 are isostructural to each other and reveal another 3D framework with structures containing YO6 octahedra and TeO3 trigonal pyramids with 4-MR and 12-MR channels. CsYTe3O8 shows a hexagonal tungsten bronze (HTB)-like topology composed of hexagonal tungsten oxide-like layers of TeO4 polyhedra and YO6 octahedral linkers with 3-MR and 6-MR channels. Thermal analyses, elemental analyses, and spectroscopic characterizations, such as UV-vis diffuse reflectance and infrared spectra, are presented, as are local dipole moment calculations for the constituent asymmetric polyhedra TeO3 and TeO4.

  14. New application of scintillator ZnSe(Te) in scintielectronic detectors for detection of neutrons, medical imaging, explosive detection, and NDT

    Science.gov (United States)

    Ryzhikov, Volodymyr D.; Opolonin, Oleksandr D.; Fedorov, Alexander G.; Lysetska, Olena K.; Kostioukevitch, Sergey A.

    2008-08-01

    Scintillators on the basis of AIIBVI compounds, such as ZnSe(Te), can be used for detection of secondary charged particles coming from nuclear reactions in which neutrons interact with target nuclei of atoms present in transparent materials of dispersion scintillation detectors matrices. Using unique properties of scintillator ZnSe(Te) we show possibility of increase detection efficiency for soft x-ray radiation (20 - 90 keV). The amorphous silicon flat panels and the photodiode arrays wide used for non-destructive testing and medical imaging (spatial resolution 20 - 400 mkm). By our estimations, using of such detectors in combination with thin film of ZnSe(Te) can increase efficiency of registration of x-ray radiation (for the source of 60-140kV) in 1,2 - 2 times. We obtained thin films (10-450mkm) of scintillator ZnSe(Te) on the different substrate materials and estimated the relative light yield of the layers deposited on the graphite and Al2O3 ceramic substrates and the bulk ZnSe(Te) crystal. Use of ZnSe(Te) in the low-energy "scintillator - photodiode" type detector allowed to increase accuracy of authentication of explosives (HEIMANN X-RAY INSPECTION SYSTEM EDtS10080). Using the dual energy digital radiography system prototype we obtained the x-ray images (60 projections of each object). These images are basic data for computer tomography and three-dimensional reconstruction of density and effective atomic number. The color identification palette provides clearly show variations of effective atomic number in biological and inorganic objects. So, for example, changes of calcium concentration in a bone. The research described in this publication was supported by STCU #4115 and NATO SfP-982823.

  15. Effect of chemical etching on the surface roughness of CdZnTe and CdMnTe gamma radiation detectors

    Energy Technology Data Exchange (ETDEWEB)

    Hossain,A.; Babalola, S.; Bolotnikov, A.E.; Camarda, G.S.; Cui, Y.; Yang, G.; Guo, M.; Kochanowska, D.; Mycielski, A.; Burger, A.; James, R.B.

    2008-08-11

    Generally, mechanical polishing is performed to diminish the cutting damage followed by chemical etching to remove the remaining damage on crystal surfaces. In this paper, we detail the findings from our study of the effects of various chemical treatments on the roughness of crystal surfaces. We prepared several CdZnTe (CZT) and CdMnTe (CMT) crystals by mechanical polishing with 5 {micro}m and/or lower grits of Al{sub 2}O{sub 3} abrasive papers including final polishing with 0.05-{micro}m particle size alumina powder and then etched them for different periods with a 2%, 5% Bromine-Methanol (B-M) solution, and also with an E-solution (HNO{sub 3}:H{sub 2}O:Cr{sub 2}O{sub 7}). The material removal rate (etching rate) from the crystals was found to be 10 {micro}m, 30 {micro}m, and 15 {micro}m per minute, respectively. The roughness of the resulting surfaces was determined by the Atomic Force Microscopy (AFM) to identify the most efficient surface processing method by combining mechanical and chemical polishing.

  16. CMOS low-noise switched charge sensitive preamplifier for CdTe and CdZnTe X-ray detectors

    Energy Technology Data Exchange (ETDEWEB)

    Jakobson, C.G.; Nemirovsky, Y. [Technion-Israel Inst. of Tech., Haifa (Israel)

    1997-02-01

    CdTe and CdZnTe X-ray detector arrays for imaging and spectroscopy provide low capacitance current sources with low leakage currents. The optimal shaping time for low-noise operation is relatively high in CMOS analog channels that provide the readout for these detectors. The shaper is centered at lower frequencies, and thus the l/f noise from the electronics is the main noise source that limits the resolution of the channel. The optimal dimensions of the input stage MOSFET are determined by this noise. In this paper a design criterion for the optimization of the resolution and the power consumption in a l/f noise dominated readout is introduced. A readout based on CMOS switched charge sensitive preamplifier without feedback resistor has been designed and fabricated in the CMOS 2-{mu} low-noise analog process provided by MOSIS. This design provides high sensitivity and the possibility to integrate a large number of channels with low power consumption. Measurements of the performance of a first prototype chip are presented.

  17. Effect of ambient gas pressure on pulsed laser ablation plume dynamics and ZnTe film growth

    Energy Technology Data Exchange (ETDEWEB)

    Rouleau, C.M.; Lowndes, D.H.; Geohegan, D.B.; Allard, L.F. [Oak Ridge National Lab., TN (United States); Strauss, M.A.; Cao, S.; Pedraza, A.J. [Univ. of Tennessee, Knoxville, TN (United States). Dept. of Materials Science and Engineering; Puretzky, A.A. [Inst. of Spectroscopy, Troitsk (Russian Federation)

    1995-12-01

    Epitaxial thin films of nitrogen-doped p-ZnTe were grown on single-crystal, semi-insulating Ga-As substrates via pulsed laser ablation of a stoichiometric ZnTe target. Both low pressure nitrogen ambients and high vacuum were used. Results of in situ reflection high energy electron diffraction (RHEED) and time-resolved ion probe measurements have been compared with ex situ Hall effect and transmission electron microscopy (TEM) measurements. A strong correlation was observed between the nature of the film`s surface during growth (2-D vs. 3-D, assessed via RHEED) and the ambient gas pressures employed during deposition. The extended defect content (assessed via cross-sectional TEM) in the region >150 mn from the film/substrate interface was found to increase with the ambient gas pressure during deposition, which could not be explained by lattice mismatch alone. At sufficiently high pressures, misoriented, columnar grains developed which were not only consistent with the RHEED observations but also were correlated with a marked decrease in Hall mobility and a slight decrease in hole concentration. Ion probe measurements, which monitored the attenuation and slowing of the ion current arriving at the substrate surface, indicated that for increasing nitrogen pressure the fast (vacuum) velocity distribution splits into a distinct fast and two collisionally-slowed components or modes. Gas controlled variations in these components mirrored trends in electrical properties and microstructural measurements.

  18. Discrimination of alpha particles in CdZnTe detectors with coplanar grid for the COBRA experiment

    Energy Technology Data Exchange (ETDEWEB)

    Rebber, Henning [Universitaet Hamburg, Institut fuer Experimentalphysik, Luruper Chaussee 149, 22761 Hamburg (Germany); Collaboration: COBRA-Collaboration

    2016-07-01

    The aim of the COBRA experiment is the search for neutrinoless double beta decay using CdZnTe semiconductor detectors. A background rate in the order of 10{sup -3} counts per keV, kg and year is intended in order to be sensitive to a half-life larger than 10{sup 26} years. Measurements from a demonstrator setup and Monte Carlo simulations indicate that a large background component is due to alpha particles. These generate charge clouds of only few μm in diameter in the detector, leading to characteristic pulse features. Parameter-based cut criteria were developed to discriminate alpha events by means of their pulse shapes. The cuts were tested on data from alpha and beta irradiation of a (1 x 1 x 1) cm{sup 3} CdZnTe detector with coplanar grid. The pulse shapes of all event signals were read out by FADCs with a sampling rate of 100 MHz. The signals were reproduced by a detector simulation which hence was used to study the cuts for energies up to 3 MeV and different detector regions.

  19. Facile fabrication of core-shell ZnO/Bi0.5Sb1.5Te3 nanorods: Enhanced photoluminescence through electron charge

    Science.gov (United States)

    Shen, Shengfei; Gao, Hongli; Deng, Yuan; Wang, Yao; Qu, Shengchun

    2016-01-01

    Surface decoration techniques are emerging as promising strategy to improve the optical properties of the ZnO based materials. The core-shell ZnO/Bi0.5Sb1.5Te3 nanorods were grown on a FTO substrate through a facile hydrothermal and magnetron sputtering combined approach. The microstructure of the core-shell nanorod arrays were investigated by the X-ray diffraction (XRD), a field emission Scanning electron microscopy (SEM) and high resolution transmission electron microscope (HTEM). The optical properties of the core-shell nanorod arrays were investigated through the diffuse reflectance absorption spectra and photoluminescence emission. The visible light absorption and especially the photoluminescence emission of the ZnO nanorods are enhanced markedly with the Bi0.5Sb1.5Te3 grains coating the ZnO nanorods through the electron charge.

  20. Development activities of a CdTe/CdZnTe pixel detector for gamma-ray spectrometry with imaging and polarimetry capability in astrophysics

    Science.gov (United States)

    Gálvez, J. L.; Hernanz, M.; Álvarez, J. M.; Álvarez, L.; La Torre, M.; Caroli, E.; Lozano, M.; Pellegrini, G.; Ullán, M.; Cabruja, E.; Martínez, R.; Chmeissani, M.; Puigdengoles, C.

    2013-05-01

    In the last few years we have been working on feasibility studies of future instruments in the gamma-ray range, from several keV up to a few MeV, in collaboration with other research institutes. High sensitivities are essential to perform detailed studies of cosmic explosions and cosmic accelerators, e.g., Supernovae, Classical Novae, Supernova Remnants (SNRs), Gamma-Ray Bursts (GRBs), Pulsars, Active Galactic Nuclei (AGN).Cadmium Telluride (CdTe) and Cadmium Zinc Telluride (CdZnTe) are very attractive materials for gamma-ray detection, since they have already demonstrated their great performance onboard current space missions, such as IBIS/INTEGRAL and BAT/SWIFT, and future projects like ASIM onboard the ISS. However, the energy coverage of these instruments is limited up to a few hundred keV, and there has not been yet a dedicated instrument for polarimetry.Our research and development activities aim to study a gamma-ray imaging spectrometer in the MeV range based on CdTe detectors, suited either for the focal plane of a focusing mission or as a calorimeter for a Compton camera. In addition, our undergoing detector design is proposed as the baseline for the payload of a balloon-borne experiment dedicated to hard X- and soft gamma-ray polarimetry, currently under study and called CμSP (CZT μ-Spectrometer Polarimeter). Other research institutes such as INAF-IASF, DTU Space, LIP, INEM/CNR, CEA, are involved in this proposal. We will report on the main features of the prototype we are developing at the Institute of Space Sciences, a gamma-ray detector with imaging and polarimetry capabilities in order to fulfil the combined requirement of high detection efficiency with good spatial and energy resolution driven by the science.

  1. CdTe(1-x)Se(x)/Cd0.5Zn0.5S core/shell quantum dots: core composition and property.

    Science.gov (United States)

    Yang, Ping; Cao, Yongqiang; Li, Xiaoyu; Zhang, Ruili; Liu, Ning; Zhang, Yulan

    2014-08-01

    Alloy CdTe(1-x)Se(x) quantum dots (QDs) have been fabricated by an organic route using Cd, Te and Se precursors in a mixture of trioctylamine and octadecylphosphonic acid at 280 °C. The variation of photoluminescence (PL) peak wavelength of the CdTe(1-x)Se(x) QDs compared with CdTe QDs confirmed the formation of an alloy structure. The Se component drastically affected the stability of CdTe(1-x)Se(x) QDs. A Cd0.5Zn0.5S shell coating on CdTe(1-x)Se(x) cores was carried out using oleic acid as a capping agent. CdTe(1-x)Se(x)/Cd0.5Zn0.5S core/shell QDs revealed dark red PL while a yellow PL peak was observed for the CdTe(1-x)Se(x) cores. The PL efficiency of the core/shell QDs was drastically increased (less than 1% for the cores and up to 65% for the core/shell QDs). The stability of QDs in various buffer solutions was investigated. Core/shell QDs can be used for biological applications because of their high stability, tunable PL and high PL efficiency.

  2. Studies on charge production from Cs2Te photocathodes in the PITZ L-band normal conducting radio frequency photo injector

    CERN Document Server

    Hernandez-Garcia, C; Asova, G; Bakr, M; Boonpornprasert, P; Good, J; Gross, M; Huck, H; Isaev, I; Kalantaryan, D; Khojoyan, M; Kourkafas, G; Lishilin, O; Malyutin, D; Melkumyan, D; Oppelt, A; Otevrel, M; Pathak, G; Renier, Y; Rublack, T; Stephan, F; Vashchenko, G; Zhao, Q

    2016-01-01

    This paper discusses the behavior of electron bunch charge produced in an L-band normal conducting radio frequency cavity (RF gun) from Cs2Te photocathodes illuminated with ps-long UV laser pulses when the laser transverse distribution consists of a flat-top core with Gaussian-like decaying halo. The produced charge shows a linear dependence at low laser pulse energies as expected in the quantum efficiency limited emission regime, while its dependence on laser pulse energy is observed to be much weaker for higher values, due to space charge limited emission. However, direct plug-in of experimental parameters into the space charge tracking code ASTRA yields lower output charge in the space charge limited regime compared to measured values. The rate of increase of the produced charge at high laser pulse energies close to the space charge limited emission regime seems to be proportional to the amount of halo present in the radial laser profile since the charge from the core has saturated already. By utilizing co...

  3. Influence of rotating magnetic fields on THM growth of CdZnTe crystals under microgravity and ground conditions

    Science.gov (United States)

    Stelian, Carmen; Duffar, Thierry

    2015-11-01

    The influence of rotating magnetic fields (RMF) on species transport and interface stability during the growth of Cd0.96Zn0.04Te:In crystals by using the traveling heater method (THM), under microgravity and terrestrial conditions, is numerically investigated. The numerical results are compared to ground and space experiments. The modeling of THM under ground conditions shows very deleterious effects of the natural convection on the morphological stability of the growth interface. The vertical flow transports the liquid of low Te concentration from the dissolution interface to the growth interface, which is consequently destabilized. The suppression of this flow, in low-gravity conditions, results in higher morphological stability of the growth interface. Application of RMF induces a two flow cell pattern, which has a destabilizing effect on the growth interface. Simulations performed by varying the magnetic field induction in the range of 1 - 3 mT show optimal conditions for the growth with a stable interface at low strength of the magnetic field (B = 1 mT). Computations of indium distribution show a better homogeneity of crystals grown under purely diffusive conditions. Rotating magnetic fields of B = 1 mT induce low intensity convection, which generates concentration gradients near the growth interface. These numerical results are in agreement with experiments performed during the FOTON M4 space mission, showing good structural quality of Cd0.96Zn0.04Te crystals grown at very low gravity level. Applying low intensity rotating magnetic fields in ground experiments has no significant influence on the flow pattern and solute distribution. At high intensity of RMF (B = 50 mT), the buoyancy convection is damped near the growth front, resulting in a more stable advancing interface. However, convection is strengthening in the upper part of the liquid zone, where the flow becomes unsteady. The multi-cellular unsteady flow generates temperature oscillations, having

  4. Comparative Study on the Efficiency of the Photodynamic Inactivation of Candida albicans Using CdTe Quantum Dots, Zn(II Porphyrin and Their Conjugates as Photosensitizers

    Directory of Open Access Journals (Sweden)

    Osnir S. Viana

    2015-05-01

    Full Text Available The application of fluorescent II-VI semiconductor quantum dots (QDs as active photosensitizers in photodymanic inactivation (PDI is still being evaluated. In the present study, we prepared 3 nm size CdTe QDs coated with mercaptosuccinic acid and conjugated them electrostatically with Zn(II meso-tetrakis (N-ethyl-2-pyridinium-2-yl porphyrin (ZnTE-2-PyP or ZnP, thus producing QDs-ZnP conjugates. We evaluated the capability of the systems, bare QDs and conjugates, to produce reactive oxygen species (ROS and applied them in photodynamic inactivation in cultures of Candida albicans by irradiating the QDs and testing the hypothesis of a possible combined contribution of the PDI action. Tests of in vitro cytotoxicity and phototoxicity in fibroblasts were also performed in the presence and absence of light irradiation. The overall results showed an efficient ROS production for all tested systems and a low cytotoxicity (cell viability >90% in the absence of radiation. Fibroblasts incubated with the QDs-ZnP and subjected to irradiation showed a higher cytotoxicity (cell viability <90% depending on QD concentration compared to the bare groups. The PDI effects of bare CdTe QD on Candida albicans demonstrated a lower reduction of the cell viability (~1 log10 compared to bare ZnP which showed a high microbicidal activity (~3 log10 when photoactivated. The QD-ZnP conjugates also showed reduced photodynamic activity against C. albicans compared to bare ZnP and we suggest that the conjugation with QDs prevents the transmembrane cellular uptake of the ZnP molecules, reducing their photoactivity.

  5. Selective uptake, distribution, and redistribution of (109)Cd, (57)Co, (65)Zn, (63)Ni, and (134)Cs via xylem and phloem in the heavy metal hyperaccumulator Solanum nigrum L.

    Science.gov (United States)

    Wei, Shuhe; Anders, Iwona; Feller, Urs

    2014-06-01

    The focus of this article was to explore the translocation of (109)Cd, (57)Co, (65)Zn, (63)Ni, and (134)Cs via xylem and phloem in the newly found hyperaccumulator Solanum nigrum L. Two experiments with the uptake via the roots and transport of (109)Cd, (57)Co, and (65)Zn labeled by roots, and the redistribution of (109)Cd, (65)Zn, (57)Co, (63)Ni, and (134)Cs using flap label in S. nigrum in a hydroponic culture with a standard nutrient solution were conducted. The results showed that (109)Cd added for 24 h to the nutrient medium of young plants was rapidly taken up, transferred to the shoot, and accumulated in the cotyledons and the oldest leaves but was not efficiently redistributed within the shoot afterward leading to a rather low content in the fruits. In contrast, (57)Co was more slowly taken up and released to the shoot, but afterward, this element was redistributed from older leaves to younger leaves and maturing fruits. (65)Zn was rapidly taken up and transferred to the shoot (mainly to the youngest leaves and not to the cotyledons). Afterward, this radionuclide was redistributed within the shoot to the youngest organs and finally accumulated in the maturing fruits. After flap labeling, all five heavy metals tested ((109)Cd, (57)Co, (65)Zn, (63)Ni, (134)Cs) were exported from the labeled leaf and redistributed within the plant. The accumulation in the fruits was most pronounced for (63)Ni and (65)Zn, while a relatively high percentage of (57)Co was finally found in the roots. (134)Cs was roughly in the middle of them. The transport of (109)Cd differed from that previously reported for wheat or lupin and might be important for the potential of S. nigrum to hyperaccumulate cadmium.

  6. Ultraviolet radiation synthesis of water dispersed CdTe/CdS/ZnS core-shell-shell quantum dots with high fluorescence strength and biocompatibility.

    Science.gov (United States)

    Xu, Bin; Cai, Bing; Liu, Ming; Fan, Hongsong

    2013-05-24

    This study explored a simple and fast method utilizing ultraviolet (UV) irradiation to synthesize CdTe/CdS/ZnS QDs in aqueous solution. Based on the reaction of photolysis and chemical deposition, the CdS and ZnS shell can be successively deposited around the thiol-capped CdTe cores through the interaction of Cd²⁺/Zn²⁺ and S²⁻ produced by UV irradiation. The effect of the UV irradiation time, the ratios of thioglycolic acid (TGA)/Cd and TGA/Zn on the shell formation, shell stability, and the photoluminescence (PL) intensity of the QDs, was systematically investigated. Keeping the ratio of TGA/Cd, increasing UV irradiation time from 30 to 120 s, the blue-shift of the fluorescence emission peak position of CdTe/CdS QDs was observed. As the irradiation time increased continuously from 120 to 300 s, the red-shift of the emission peak position was observed. In the total irradiation time, the PL intensity of all the samples was enhanced. By applying 300 s irradiation on the samples, the emission peak was blue-shifted at a fixed TGA/Cd ratio of 1:1 and red-shifted at the ratios of 2:1, 4:1, 8:1, and 13:1. The PL intensity reached its highest value at the ratio of 2:1. The effect of TGA/Zn ratio on ZnS shell formation showed a similar progress. Under an optimum synthesized reaction condition, the particle sizes of CdTe core, CdTe/CdS core-shell and CdTe/CdS/ZnS core-shell-shell QDs were 2.6 nm, 3.4 nm, and 4.6 nm respectively. This study confirmed that with the core-shell-shell structure, CdTe/CdS/ZnS QDs had high anti-oxidability, photostability, and low toxicity. Therefore they can be further used in cell imaging efficiently.

  7. Pulsed laser annealing of CdTe/Cd{sub 1-x}Mn{sub x}Te epilayers and pulsed laser emission of ZnS/Zn{sub 1-x}Cd{sub x}S quantum well structures

    Energy Technology Data Exchange (ETDEWEB)

    Howari, H

    1999-10-01

    Pulsed laser annealing (PLA) of CdTe/CdMnTe quantum well structures are made in order to verify the calculated depth dependent increase of temperature within the surface of a semiconductor for different laser fluences. Since diffusion coefficients are strongly dependent on the temperature, depth resolution is achieved because quantum wells at different depths diffuse by different amounts. Further, magneto-optical measurements of the CdTe/CdMnTe magnetic quantum well structures are used to confirm the extent of the diffusion. The energies of the different resulting optical transitions of the quantum wells are compared to calculated values, from which the amount of diffusion is estimated. At a laser fluence of 90 mJ cm{sup -2} the lattice melts and the amount of diffusion in the quantum well (QW) beneath the melt front is found to be characterised by a value of D(T)t = 300 A{sup 2}. The amount of diffusion is found to drop approximately by a factor of 10 when the heat pulse progresses to the next QW beneath the melt front. We have shown that ion implantation-induced disorder in DQW structures can be laser annealed in a low-energy mode. In other words there appears to be an energy window around 50 mJ cm{sup -2}, with the upper limit below the melting threshold, in which the crystallinity of the structure can be restored. Increasing the laser pulse energy above this limit induce a new kind of structural disorder in the irradiated sample where the crystalline channels can be destroyed and the material can finally be melted. We have also demonstrated, for the first time to my knowledge, optically pumped UV laser emission in ZnS/Zn{sub 1-x}Cd{sub x}S non-graded SCH and GRIN-SCH structures and measured the optical gain. We have shown the need to prevent surface recombination if laser action is to he achieved and find that a GRIN-SCH or a non-graded SCH structures are equally effective in achieving this. The minimum laser threshold of the non-graded SCH structure is 20 k

  8. New trends in γ-ray imaging with CdZnTe/CdTe at CEA-Leti

    Science.gov (United States)

    Verger, Loïck; Gros d'Aillon, Eric; Monnet, Olivier; Montémont, Guillaume; Pelliciari, Bernard

    2007-02-01

    Increasing interest in CdTe/CZT for γ-ray imaging has marked the last 10 years with progress in crystal growth, device technology, integrated electronics and signal processing. The purpose of this paper is to present recent advances in these four fields at CEA-LETI. A new method to grow very large dimension CZT up to 300 mm in diameter is presented. MS-contact process control allows design of very small electrodes (100 μm pitch) and results on long-term stability are presented. The development of low-noise front-end integrated electronics and new interconnects technologies have made "pixel detectors" feasible. Significant effort has been focused on reaching high-energy resolution as well as high detection efficiency. The combination of signal processing such as bi-parametric (BP) approaches and electrode design presents an interest in charge loss compensation for a large range of μτ products, tailing reduction due to geometric effect and depth of interaction information. New digital approaches may give drastic advantages to push the limit of spectrometric performance. In the field of γ-ray application, single-channel device for per-operative probes and small 2-D imager for molecular imaging are the most promising ones. By using a tailored "mixed" electrode (small anode and capacitive grid Frich effect) and a BP correction, an energy resolution of 1% at 662 keV has been demonstrated with CZT based 8×8×15 mm 3 detector. New results of 3-D CZT detectors for μPET imaging are presented with a measured coincidence time of 2.6 ns FWHM and an expected spatial resolution of 1 mm FWHM.

  9. Infrared reflection spectra of the films of topological insulator Pb1-xSnxSe on the substrates ZnTe/GaAs

    Directory of Open Access Journals (Sweden)

    Novikova N.N.

    2017-01-01

    Full Text Available Infrared reflectivity spectra of the 700 nm thick topological insulator Pb1-xSnxSe films grown by the molecular beam epitaxy technique on ZnTe/GaAs substrates were studied. Using dispersion analysis of reflectivity spectra plasmon and phonon parameters for the samples under study were obtained.

  10. Synthesis of Aqueous CdTe/CdS/ZnS Core/shell/shell Quantum Dots by a Chemical Aerosol Flow Method

    Directory of Open Access Journals (Sweden)

    Chen Dong

    2009-01-01

    Full Text Available Abstract This work described a continuous method to synthesize CdTe/CdS/ZnS core/shell/shell quantum dots. In an integrated system by flawlessly combining the chemical aerosol flow system working at high temperature (200–300°C to generate CdTe/CdS intermediate products and an additional heat-up setup at relatively low temperature to overcoat the ZnS shells, the CdTe/CdS/ZnS multishell structures were realized. The as-synthesized CdTe/CdS/ZnS core/shell/shell quantum dots are characterized by photoluminescence spectra, X-ray diffraction (XRD, energy-dispersive X-ray spectra (EDS, transmission electron microscopy (TEM, and high-resolution transmission electron microscopy (HRTEM. Fluorescence and XRD results confirm that the obtained quantum dots have a core/shell/shell structure. It shows the highest quantum yield above 45% when compared to the rhodamine 6G. The core/shell/shell QDs were more stable via the oxidation experiment by H2O2.

  11. Graded-Bandgap Solar Cells Using All-Electrodeposited ZnS, CdS and CdTe Thin-Films

    Directory of Open Access Journals (Sweden)

    Obi K. Echendu

    2015-05-01

    Full Text Available A 3-layer graded-bandgap solar cell with glass/FTO/ZnS/CdS/CdTe/Au structure has been fabricated using all-electrodeposited ZnS, CdS and CdTe thin layers. The three semiconductor layers were electrodeposited using a two-electrode system for process simplification. The incorporation of a wide bandgap amorphous ZnS as a buffer/window layer to form glass/FTO/ZnS/CdS/CdTe/Au solar cell resulted in the formation of this 3-layer graded-bandgap device structure. This has yielded corresponding improvement in all the solar cell parameters resulting in a conversion efficiency >10% under AM1.5 illumination conditions at room temperature, compared to the 8.0% efficiency of a 2-layer glass/FTO/CdS/CdTe/Au reference solar cell structure. These results demonstrate the advantages of the multi-layer graded-bandgap device architecture over the conventional 2-layer structure. In addition, they demonstrate the effective application of the two-electrode system as a simplification to the conventional three-electrode system in the electrodeposition of semiconductors with the elimination of the reference electrode as a possible impurity source.

  12. A Simple Fluorescence Quenching Method for the Determination of Vanillin Using TGA-capped CdTe/ZnS Nanoparticles as Probes.

    Science.gov (United States)

    Li, Li; Zhang, Qiaolin; Ding, Yaping; Lu, Yaxiang; Cai, Xiaoyong; Yu, Lurong

    2015-07-01

    Based on the quenching of the fluorescence intensity of thioglycolic acid (TGA)-capped core-shell CdTe/ZnS nanoparticles (NPs) by vanillin, a novel, simple and rapid method for the determination of vanillin was proposed. In aqueous medium, the functionalized core-shell CdTe/ZnS NPs were successfully synthesized with TGA as the capping ligand. TGA-capped core-shell CdTe/ZnS NPs were characterized by using X-ray diffraction (XRD), transmission electron microscopy (TEM) and Fourier transform infrared (FTIR) spectroscopy. Factors affecting the vanillin detection were investigated, and the optimum conditions were also determined. Under the optimum conditions, the relative fluorescence intensity of CdTe/ZnS NPs was linearly proportional to vanillin over a concentration range from 9.4 × 10(-7) to 5.2 × 10(-4) M with a correlation coefficient of 0.998 and a detection limit of 2.6 × 10(-7) M. The proposed method was also employed to detect trace vanillin in cookies with satisfactory results.

  13. Deep levels in high resistive CdTe and CdZnTe explored by photo-Hall effect and photoluminescence spectroscopy

    Science.gov (United States)

    Musiienko, Artem; Grill, Roman; Hlídek, Pavel; Moravec, Pavel; Belas, Eduard; Zázvorka, Jakub; Korcsmáros, Gabriel; Franc, Jan; Vasylchenko, Igor

    2017-01-01

    High resistive CdTe and CdZnTe single crystals were measured by photo-Hall effect spectroscopy (PHES) and photoluminescence spectroscopy (PL) with the aim of discovering the position of deep levels (DLs) in the band gap. Illumination in the range of 0.65-1.77 eV, room temperature, and DC electrical measurements were used in the case of PHES. Low temperature (4 K) photoluminescence spectra were recorded in the spectral range above 0.47 eV. Eight samples, both n-type and p-type, were studied and typical shapes of spectra were collected, compared and interpreted for both spectroscopy methods. It was shown that a simple single-level model of PHES often fails in the interpretation of DLs distant from the midgap. Eight DLs with the energy E c - 0.65 eV, E c - 0.8 eV, E c - 0.9 eV, E c - (1.10-1.15) eV, E v + 0.70 eV, E v + 0.85 eV, E v + 1.0 eV, and E c - 1.25 eV were interpreted. A memory effect characterized by a relaxation time of about 60 s was observed at the 0.8 eV level and allowed us to determine the 1.7 × 10-17 cm2 capture cross-section of electrons on this level. It is argued that PHES is a convenient complementary method to identify and characterize DLs, including DLs inaccessible by thermal emission techniques. DLs observed by PHES were consistently verified by PL.

  14. First-principles calculations of a half-metallic ferromagnet zinc blende Zn{sub 1−x}V{sub x}Te

    Energy Technology Data Exchange (ETDEWEB)

    El Amine Monir, M.; Baltache, H. [Laboratoire de Physique Quantique de la Modélisation Mathématique (LPQ3M), Université de Mascara, 29000 (Algeria); Khenata, R., E-mail: khenata_rabah@yahoo.fr [Laboratoire de Physique Quantique de la Modélisation Mathématique (LPQ3M), Université de Mascara, 29000 (Algeria); Murtaza, G. [Materials Modeling Laboratory, Department of Physics, Islamia College University, Peshawar (Pakistan); Azam, Sikander [New Technologies-Research Center, University of West Bohemia, Univerzitni 8, 306 14 Pilsen (Czech Republic); Bouhemadou, A. [Laboratory for Developing New Materials and their Characterization, Department of Physics, Faculty of Science, University Setif 1, 19000 Setif (Algeria); Al-Douri, Y. [Institute of Nano Electronic Engineering, University Malaysia Perlis, 01000 Kangar, Perlis (Malaysia); Bin Omran, S. [Department of Physics and Astronomy, College of Science, King Saud University, P.O. Box 2455, Riyadh 11451 (Saudi Arabia); Ali, Roshan [Materials Modeling Lab, Department of Physics, Post Graduate Jahanzeb College, Swat (Pakistan)

    2015-03-15

    First-principles calculations have been used to study the structural, elastic, electronic, magnetic and thermal properties of zinc blende Zn{sub 1−x}V{sub x}Te for x=0, 0.25, 0.50, 0.75 and 1 using the full-potential linearized augmented plane wave method (FP-LAPW) based on spin-polarized density functional theory (DFT). The electronic exchange-correlation potential is approached using the spin generalized gradient approximation (spin-GGA). The structural properties of the Zn{sub 1−x}V{sub x}Te alloys (x=0, 0.25, 0.50, 0.75 and 1) are given for the lattice constants and the bulk moduli and their pressure derivatives. The elastic constants C{sub 11}, C{sub 12} and C{sub 44} are calculated using numerical first-principles calculations implemented in the WIEN2k package. An analysis of the band structures and the densities of states reveals that Zn{sub 0.50}V{sub 0.50}Te and Zn{sub 0.75}V{sub 0.25}Te exhibit a half-metallic character, while Zn{sub 0.25}V{sub 0.75}Te is nearly half-metallic. The band structure calculations are used to estimate the spin-polarized splitting energies Δ{sub x}(d) and Δ{sub x}(pd) produced by the V(3d)-doped and s(p)–d exchange constants N{sub 0α} (conduction band) and N{sub 0β} (valence band). The p–d hybridization reduces the magnetic moment of V from its atomic charge value of 3µ{sub B} and creates small local magnetic moments on the nonmagnetic Zn and Te sites. Finally, we present the thermal effect on the macroscopic properties of these alloys, such as the thermal expansion coefficient, heat capacity and Debye temperature, based on the quasi-harmonic Debye model. - Highlights: • Some physical properties of Vanadium doped ZnTe have been investigated. • Structural parameters for the parent compounds compare well with the available data. • The elastic and thermal properties are studied for the first time.

  15. Effect of precursors stoichiometry on morphology, crystallinity and electrical properties of ZnTe epilayers grown on (100)GaAs by MOVPE

    Energy Technology Data Exchange (ETDEWEB)

    Paiano, P.; Lovergine, N.; Mancini, A.M. [Dipartimento di Ingegneria dell' Innovazione, Universita di Lecce, Via Arnesano, I-73100 Lecce (Italy); Prete, P. [Istituto per la Microelettronica e Microsistemi del CNR, Sezione di Lecce, Via Arnesano, I-73100 Lecce (Italy)

    2005-11-01

    The effect of precursors vapour stoichiometry on the morphological, structural and electrical properties of nominally undoped ZnTe grown on (100)GaAs by metalorganic vapour phase epitaxy is reported. The epilayers were grown at 350 C using dimethylzinc (Me{sub 2}Zn) and di-isopropyltelluride, varying their molar flow rate ratios (MFRs) between 0.17 and 3.10. Growth in nearly stoichiometric (MFR=1.03) conditions results in best surface morphology, while samples grown in Te-rich conditions (MFR>1.7) showed micron-size hollow defects (with surface densities up to {proportional_to}10{sup 6} cm{sup -2}) elongated in one of the left angle 011 right angle in-plane directions. The defects are associated to a local structural disorder of the material, ascribed to the formation of a Ga{sub 2}Te{sub 3} extrinsic phase at the ZnTe/GaAs interface. Ohmic contacts to p -ZnTe epilayers were prepared by tungsten evaporation and annealing at 350 C. The RT hole concentration in the epilayers varies almost linearly with Me{sub 2}Zn molar flow between 2 x 10{sup 15} cm{sup -3} and 5 x 10{sup 16} cm{sup -3}. Temperature-dependent Hall measurements performed on samples grown at MFR{<=}1.03 demonstrate that the material p-type conductivity originates from a single acceptor centre with an ionisation energy between 94.7 meV and 118 meV, its concentration being in the 10{sup 16} cm{sup -3} range and slowly increasing with Me{sub 2}Zn flow. We ascribe this acceptor to a complex formed by a substitutional carbon atom on a Te site and a donor on a nearest neighbor site (C{sub Te}-D{sub Zn}), the donor impurity being further identified as Ga diffusing from the substrate. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  16. Sensitivity studies of beta-radiation detector based on small-crystalline scintillator ZnSe(Te)

    CERN Document Server

    Gavrylyuk, V; Danshin, E

    2001-01-01

    A new large area beta-detector has been designed and studied.The design includes wedge-shaped light transducers.A composite material based on a small crystalline ZnSe(Te) was applied onto the wide surface of light transducer.This design ensures optimum light collection from the large sensitive surface onto the output window of a much smaller size.An experimental specimen has been prepared, which showed a beta-sensitivity C subbeta=5.5 cm sup 2. The spectrograms of a sup 9 sup 0 Sr sup + sup 9 sup 0 Y beta--source obtained with the specimen under study make it possible to evaluate the age of the source by the ratio of low-and high-energy regions of the spectrum. Other designs are proposed for application of large-area detectors possessing wedge-shaped light transducers as elements of assembled constructions for high efficiency detectors operating under flow conditions.

  17. An effect of the networks of the subgrain boundaries on spectral responses of thick CdZnTe detectors

    Energy Technology Data Exchange (ETDEWEB)

    Bolotnikov, A.; Butcher, J.; Camarda, G.; Cui, Y.; Egarievwe, S.; Fochuk, P.; Gul,R.; Hamade, M.; Hossain, A.; Kim, K.; Kopach,O.; Petryk, M.; Raghothamachar, B.; Yang, G.; and James, R.B.

    2011-08-12

    CdZnTe (CZT) crystals used for nuclear-radiation detectors often contain high concentrations of subgrain boundaries and networks of poligonized dislocations that can significantly degrade the performance of semiconductor devices. These defects exist in all commercial CZT materials, regardless of their growth techniques and their vendor. We describe our new results from examining such detectors using IR transmission microscopy and white X-ray beam diffraction topography. We emphasize the roles on the devices performances of networks of subgrain boundaries with low dislocation densities, such as poligonized dislocations and mosaic structures. Specifically, we evaluated their effects on the gamma-ray responses of thick, >10 mm, CZT detectors. Our findings set the lower limit on the energy resolution of CZT detectors containing dense networks of subgrain boundaries, and walls of dislocations.

  18. Parallel readout of two-element CdZnTe detectors with real-time digital signal processing

    Energy Technology Data Exchange (ETDEWEB)

    Shi Zhubin; Wang Linjun; Qin Kaifeng; Min Jiahua; Zhang Jijun; Liang Xiaoyan; Huang Jian; Tang Ke; Xia Yiben, E-mail: ljwang@shu.edu.cn [School of Materials Science and Engineering, Shanghai University, Shanghai 200072 (China)

    2010-12-15

    Readout electronics, especially digital electronics, for two-element CdZnTe (CZT) detectors in parallel are developed. The preliminary results show the detection efficiency of the two-element CZT detectors in parallel with analog electronics is as many as 1.8 and 2.1 times the single ones, and the energy resolution (FWHM) is limited by that of the single one by the means of analog electronics. However, the digital method for signal processing will be sufficiently better by contrast with an analog method especially in energy resolution. The energy resolution by the means of digital electronics can be improved by about 26.67%, compared to that only with analog electronics, while their detection efficiency is almost the same. The cause for this difference is also discussed. (semiconductor devices)

  19. Growth by the Multi-tube Physical Vapour Transport method and characterisation of bulk (Cd,Zn)Te

    Science.gov (United States)

    Choubey, A.; Veeramani, P.; Pym, A. T. G.; Mullins, J. T.; Sellin, P. J.; Brinkman, A. W.; Radley, I.; Basu, A.; Tanner, B. K.

    2012-08-01

    Growth by the Multi-tube Physical Vapour Transport technique and characterisation of bulk (Cd,Zn)Te is described. The crystalline perfection and uniformity of zinc content have been mapped by infra-red transmission and microscopy, X-ray diffraction and photoluminescence. X-ray double crystal rocking curve full widths at half maximum as low as 43 in have been obtained and a mean zinc mole fraction of 0.03 has been found to vary by less than ±0.003 over the diameter of a 50 mm boule. The material exhibits a resistivity in the 2×109Ω cm range and planar devices fabricated from this material have shown electron mobility lifetime products of 4.07×10-3 cm2 V-1.

  20. SEMICONDUCTOR DEVICES Parallel readout of two-element CdZnTe detectors with real-time digital signal processing

    Science.gov (United States)

    Zhubin, Shi; Linjun, Wang; Kaifeng, Qin; Jiahua, Min; Jijun, Zhang; Xiaoyan, Liang; Jian, Huang; Ke, Tang; Yiben, Xia

    2010-12-01

    Readout electronics, especially digital electronics, for two-element CdZnTe (CZT) detectors in parallel are developed. The preliminary results show the detection efficiency of the two-element CZT detectors in parallel with analog electronics is as many as 1.8 and 2.1 times the single ones, and the energy resolution (FWHM) is limited by that of the single one by the means of analog electronics. However, the digital method for signal processing will be sufficiently better by contrast with an analog method especially in energy resolution. The energy resolution by the means of digital electronics can be improved by about 26.67%, compared to that only with analog electronics, while their detection efficiency is almost the same. The cause for this difference is also discussed.

  1. Polarimetric analysis of a CdZnTe spectro-imager under multi-pixel irradiation conditions

    Science.gov (United States)

    Pinto, M.; da Silva, R. M. Curado; Maia, J. M.; Simões, N.; Marques, J.; Pereira, L.; Trindade, A. M. F.; Caroli, E.; Auricchio, N.; Stephen, J. B.; Gonçalves, P.

    2016-12-01

    So far, polarimetry in high-energy astrophysics has been insufficiently explored due to the complexity of the required detection, electronic and signal processing systems. However, its importance is today largely recognized by the astrophysical community, therefore the next generation of high-energy space instruments will certainly provide polarimetric observations, contemporaneously with spectroscopy and imaging. We have been participating in high-energy observatory proposals submitted to ESA Cosmic Vision calls, such as GRI (Gamma-Ray Imager), DUAL and ASTROGAM, where the main instrument was a spectro-imager with polarimetric capabilities. More recently, the H2020 AHEAD project was launched with the objective to promote more coherent and mature future high-energy space mission proposals. In this context of high-energy proposal development, we have tested a CdZnTe detection plane prototype polarimeter under a partially polarized gamma-ray beam generated from an aluminum target irradiated by a 22Na (511 keV) radioactive source. The polarized beam cross section was 1 cm2, allowing the irradiation of a wide multi-pixelated area where all the pixels operate simultaneously as a scatterer and as an absorber. The methods implemented to analyze such multi-pixel irradiation are similar to those required to analyze a spectro-imager polarimeter operating in space, since celestial source photons should irradiate its full pixilated area. Correction methods to mitigate systematic errors inherent to CdZnTe and to the experimental conditions were also implemented. The polarization level ( 40%) and the polarization angle (precision of ±5° up to ±9°) obtained under multi-pixel irradiation conditions are presented and compared with simulated data.

  2. Design and performances of a low-noise and radiation-hardened readout ASIC for CdZnTe detectors

    Science.gov (United States)

    Bo, Gan; Tingcun, Wei; Wu, Gao; Yongcai, Hu

    2016-06-01

    In this paper, we present the design and performances of a low-noise and radiation-hardened front-end readout application specific integrated circuit (ASIC) dedicated to CdZnTe detectors for a hard X-ray imager in space applications. The readout channel is comprised of a charge sensitive amplifier, a CR-RC shaping amplifier, an analog output buffer, a fast shaper, and a discriminator. An 8-channel prototype ASIC is designed and fabricated in TSMC 0.35-μm mixed-signal CMOS technology, the die size of the prototype chip is 2.2 × 2.2 mm2. The input energy range is from 5 to 350 keV. For this 8-channel prototype ASIC, the measured electrical characteristics are as follows: the overall gain of the readout channel is 210 V/pC, the linearity error is less than 2%, the crosstalk is less than 0.36%, The equivalent noise charge of a typical channel is 52.9 e- at zero farad plus 8.2 e- per picofarad, and the power consumption is less than 2.4 mW/channel. Through the measurement together with a CdZnTe detector, the energy resolution is 5.9% at the 59.5-keV line under the irradiation of the radioactive source 241Am. The radiation effect experiments show that the proposed ASIC can resist the total ionization dose (TID) irradiation of higher than 200 krad(Si). Project supported by the National Key Scientific Instrument and Equipment Development Project (No. 2011YQ040082), the National Natural Science Foundation of China (Nos. 11475136, 11575144, 61176094), and the Shaanxi Natural Science Foundation of China (No. 2015JM1016).

  3. Effects of excess tellurium and growth parameters on the band gap defect levels in CdxZn1-xTe

    Science.gov (United States)

    Soundararajan, Raji; Lynn, Kelvin G.

    2012-10-01

    This research summarizes an effective way to understand compensation for use of CdZnTe as ambient temperature radiation detector. The indium doped CdZnTe passivates certain detrimental intrinsic defects and defect complexes in the band gap. This was achieved by using a combination of excess tellurium in the starting material (0% to 7.5% by weight) and the process variables during growth, including the imposed temperature gradient, growth rate, and cool-down process. These studies have shown that a combination of slight excess tellurium as well as the cool-down scheme could control certain intrinsic defect levels and defect level complexes in the band gap of CdZnTe by causing favorable carrier compensation. At a macroscopic level, these manipulations help to minimize thermal instabilities during growth and determine the final grain structure, integrity, and yield of the ingot. Also, these manipulations help to control the formation of certain intrinsic defect levels and defect level complexes in the band gap, which have a direct bearing on the ability of the CdZnTe crystals to function as room temperature radiation detectors. The band-gap defects in CdZnTe were studied using the thermally stimulated current (TSC) technique. The thermal ionization energy and capture cross-section for 8 prominent defect levels (current peaks in the TSC spectrum) were calculated using the variable heating rate method. These fitted values were compared to transition energy levels of possible defects in the band gap of CdTe and purity data of CdZnTe samples used in this study. The theoretical values of the transition energy levels of defects in the band gap of CdTe were determined by the first principle band gap structure studies as well as our earlier studies on defects and defect levels in the band gap of CdTe. We have tentatively associated some prominent current peaks to certain defect levels and defect level complexes in Cd1-xZnxTe. The improvement in the detector properties was

  4. New semiconductor scintillators ZnSe(Te,O) and integrated radiation detectors based thereon

    NARCIS (Netherlands)

    Ryzhikov, [No Value; Starzhinskiy, N; Gal'chinetskii, L; Gashin, P; Kozin, D; Danshin, E

    Data are presented on properties of a new type of scintillator based on isovalently doped crystals of zinc selenide. Depending upon concentration of activating dopants Te and O, the wavelength of the luminescence maximum is 590-640 nm, response time is 1-50 mus, and afterglow level after 5 ms is not

  5. New semiconductor scintillators ZnSe(Te,O) and integrated radiation detectors based thereon

    NARCIS (Netherlands)

    Ryzhikov, [No Value; Starzhinskiy, N; Gal'chinetskii, L; Gashin, P; Kozin, D; Danshin, E

    2001-01-01

    Data are presented on properties of a new type of scintillator based on isovalently doped crystals of zinc selenide. Depending upon concentration of activating dopants Te and O, the wavelength of the luminescence maximum is 590-640 nm, response time is 1-50 mus, and afterglow level after 5 ms is not

  6. Thermal, optical and structural properties of glasses within the TeO{sub 2}-TiO{sub 2}-ZnO system

    Energy Technology Data Exchange (ETDEWEB)

    Ghribi, N. [CNRS-Université de Limoges, Science des Procédés Céramiques et de Traitements de Surface, UMR7315 CNRS, Centre Européen de la Céramique, 12 rue Atlantis, 87068 Limoges Cedex (France); Sciences des Matériaux et de l’Environnement Laboratory, Sfax University, Route de Soukra km 4, 3038 Sfax (Tunisia); Dutreilh-Colas, M.; Duclère, J.-R. [CNRS-Université de Limoges, Science des Procédés Céramiques et de Traitements de Surface, UMR7315 CNRS, Centre Européen de la Céramique, 12 rue Atlantis, 87068 Limoges Cedex (France); Hayakawa, T. [Field of Advanced Energy Conversion, Department of Frontier Materials, Nagoya Institute of Technology, Gokiso, Showa, Nagoya 466-8555 (Japan); Carreaud, J. [CNRS-Université de Limoges, Science des Procédés Céramiques et de Traitements de Surface, UMR7315 CNRS, Centre Européen de la Céramique, 12 rue Atlantis, 87068 Limoges Cedex (France); Karray, R.; Kabadou, A. [Sciences des Matériaux et de l’Environnement Laboratory, Sfax University, Route de Soukra km 4, 3038 Sfax (Tunisia); and others

    2015-02-15

    Highlights: • This paper reports on original results on new tellurium oxide-based glasses which are actually very promising glasses in the field of nonlinear optics. • We present for the first time the determination of a new glassy system and the structure of the glasses has been investigated using Raman spectroscopy which is actually the most adapted method in laboratory to study the local structure of tellurite glasses, a detail linear and non-linear optical study is also presented. - Abstract: A glass-forming domain was evidenced and studied within the TeO{sub 2}-TiO{sub 2}-ZnO system. Density, glass transition temperature (T{sub g}) and onset crystallization temperature (T{sub 0}) were measured and interpreted as a function of the zinc oxide mole fraction for relevant glasses. It was concluded that the zinc oxide favors the thermal stability of glasses. On the other hand, the impact of TiO{sub 2} addition is even more pronounced on the enhancement of the thermal stability. The optical transmission was recorded for series of glasses in the UV-Visible-NIR range. Refractive index and optical band gap were extracted from these measurements and studied as a function of the ZnO content. Linear refractive indices and optical band gap were found to decrease and increase respectively, with increasing ZnO content. The third-order non-linear susceptibility Re (χ{sup 3}), measured for two series of glasses (TiO{sub 2} content was fixed either to 5 or 10 mol%), was found to progressively decrease when the ZnO concentration increases. The impact of ZnO modifier on the glass structure was discussed based on Raman spectroscopy data. We evidenced that TiO{sub 2} does not change drastically the glass network, whereas ZnO leads in a first step to the breaking of the Te-O-Te bridges, inducing network depolymerization. A further addition in ZnO leads to the formation of new Te-O-Zn and Zn-O-Zn linkages.

  7. Improvement of the physical properties of ZnO/CdTe core-shell nanowire arrays by CdCl2 heat treatment for solar cells.

    Science.gov (United States)

    Consonni, Vincent; Renet, Sébastien; Garnier, Jérôme; Gergaud, Patrice; Artús, Lluis; Michallon, Jérôme; Rapenne, Laetitia; Appert, Estelle; Kaminski-Cachopo, Anne

    2014-01-01

    CdTe is an important compound semiconductor for solar cells, and its use in nanowire-based heterostructures may become a critical requirement, owing to the potential scarcity of tellurium. The effects of the CdCl2 heat treatment are investigated on the physical properties of vertically aligned ZnO/CdTe core-shell nanowire arrays grown by combining chemical bath deposition with close space sublimation. It is found that recrystallization phenomena are induced by the CdCl2 heat treatment in the CdTe shell composed of nanograins: its crystallinity is improved while grain growth and texture randomization occur. The presence of a tellurium crystalline phase that may decorate grain boundaries is also revealed. The CdCl2 heat treatment further favors the chlorine doping of the CdTe shell with the formation of chlorine A-centers and can result in the passivation of grain boundaries. The absorption properties of ZnO/CdTe core-shell nanowire arrays are highly efficient, and more than 80% of the incident light can be absorbed in the spectral range of the solar irradiance. The resulting photovoltaic properties of solar cells made from ZnO/CdTe core-shell nanowire arrays covered with CuSCN/Au back-side contact are also improved after the CdCl2 heat treatment. However, recombination and trap phenomena are expected to operate, and the collection of the holes that are mainly photo-generated in the CdTe shell from the CuSCN/Au back-side contact is presumably identified as the main critical point in these solar cells.

  8. Effect of impurities on the successive phase transitions in (Cs sub 1 sub - sub x Rb sub x) sub 2 ZnI sub 4 compounds

    CERN Document Server

    Aleksandrova, I P; Falvello, L R; Torres, J M; Sukhovskii, A A

    2002-01-01

    The heat capacity, nuclear quadrupole resonance (NQR) and x-ray diffraction of (Cs sub 1 sub - sub x Rb sub x) sub 2 ZnI sub 4 single crystals have been measured, for x=0, 0.001, 0.005, 0.01, 0.025 and 0.05. The normal to incommensurate (N-Inc) phase transition at T sub I , the incommensurate to commensurate (Inc-C) lock-in transition at T sub L and the structural commensurate monoclinic to triclinic transition at T sub L sub T , observed in the parent compound (x=0), takes place for x=0, 0.001, 0.005 and 0.01. For x=0.025 only T sub I and T sub L are detected, while for x=0.05 no transitions were observable. The values of T sub I and T sub L increase with x while T sub L sub T decreases and disappears at the concentration x=0.025. The effect of defects, besides modifying the transition temperatures, is that of broadening and lowering the heat capacity anomaly at the lock-in transition until its total quenching for x=0.05. No observable hysteresis is detected in this transition. NQR and x-ray diffraction data...

  9. Effect of plastic deformation on the optical and electrical properties in Cd0.96Zn0.04Te single crystals

    Science.gov (United States)

    Lmai, F.; Moubah, R.; Amiri, A. El.; Boudali, A.; Hlil, E. K.; Lassri, H.

    2017-01-01

    Using UV-visible, photoluminescence, electrical measurements and ab-initio calculations, we study the effect of introduced dislocations on the optical and electrical properties in Cd0.96Zn0.04Te crystals. To generate dislocations, a plastic deformation on the Cd(111) and Te (1 bar 1 bar 1 bar) faces was induced. It is shown that the plastic deformation results in: i) a decrease in Zn concentration in the deformed regions, which is higher on the Cd face, ii) decrease in the band gap energy, iii) an increase of acceptor concentration, and iv) the leakage current is higher on the Te face. Calculation of barrier height has led to identify the dominant defect, which is the complex Cd vacancies, acceptor center [VCd, ACd] on the Cd face and VTe on the Te side, respectively. Electronic structure calculations based on full potential linearized augmented plane waves (FPLAPW) method were performed as well and have shown that the optical band gap energy decrease upon deformation can be understood by the decrease in Zn content in the deformed regions.

  10. Interface Study of ITO/ZnO and ITO/SnO2 Complex Transparent Conductive Layers and Their Effect on CdTe Solar Cells

    Directory of Open Access Journals (Sweden)

    Tingliang Liu

    2013-01-01

    Full Text Available Transparent ITO/ZnO and ITO/SnO2 complex conductive layers were prepared by DC- and RF-magnetron sputtering. Their structure and optical and electronic performances were studied by XRD, UV/Vis Spectroscopy, and four-probe technology. The interface characteristic and band offset of the ITO/ZnO, ITO/SnO2, and ITO/CdS were investigated by Ultraviolet Photoelectron Spectroscopy (UPS and X-ray Photoelectron Spectroscopy (XPS, and the energy band diagrams have also been determined. The results show that ITO/ZnO and ITO/SnO2 films have good optical and electrical properties. The energy barrier those at the interface of ITO/ZnO and ITO/SnO2 layers are almost 0.4 and 0.44 eV, which are lower than in ITO/CdS heterojunctions (0.9 eV, which is beneficial for the transfer and collection of electrons in CdTe solar cells and reduces the minority carrier recombination at the interface, compared to CdS/ITO. The effects of their use in CdTe solar cells were studied by AMPS-1D software simulation using experiment values obtained from ZnO, ITO, and SnO2. From the simulation, we confirmed the increase of Eff, FF, Voc, and Isc by the introduction of ITO/ZnO and ITO/SnO2 layers in CdTe solar cells.

  11. Cu{sub 2}ZnSnSb(S,Se,Te){sub 4} film formation from selenization of sputtered self-prepared single ceramic target

    Energy Technology Data Exchange (ETDEWEB)

    Tsega, Moges, E-mail: mogestsega@yahoo.com [Department of Physics, University of the Free State (Qwaqwa campus), Private Bag X13, Phuthaditjhaba 9866 (South Africa); Kuo, Dong-Hau [Department of Materials Science and Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan (China); Dejene, F.B. [Department of Physics, University of the Free State (Qwaqwa campus), Private Bag X13, Phuthaditjhaba 9866 (South Africa)

    2015-08-31

    Single-layered Cu{sub 2}ZnSnSb(S,Se,Te){sub 4}(CZTASSeTe) thin films were prepared on Mo/glass substrate by radio frequency magnetron sputtering of a self-prepared single ceramic target. Successive selenization for the as-deposited film at a substrate temperature of 200 °C in Se-atmosphere was performed at various temperatures between 400 °C and 600 °C for 1 h. Structural investigation of the grown films revealed single-phase tetragonal structure corresponding to kesterite CZTSSe. All measured samples were found to exhibit p-type conductivity. An improved grain size and crystal quality with suitable atomic ratio [Cu/(Zn + Sb + Sn) = 0.89, Zn/Sn = 1.15, and metal/(S + Se + Te) = 1.02] obtained for CZTASSeTe film selenized at 600 °C. The Hall concentration increased from 1.06 to 5.8 × 10{sup 17} cm{sup −3}, mobility increased from 2.82 to 44.3 cm{sup 2} V{sup −1} s{sup −1}, and resistivity decreased from 20.92 to 0.24 Ω cm as the precursor film is selenized to 600 °C. An enhanced Hall mobility can be ascribed to the larger grains with better crystallinity and composition in the selenized film at 600 °C. Our large grain size and maximized mobility for CZTASSeTe film at the selenization temperature of 600 °C from single ceramic target can be useful for the fabrication of the CZTASSeTe absorber layer. - Highlights: • Cu{sub 2}ZnSnSb(S,Se,Te){sub 4} thin films were deposited by sputtering single ceramic target. • Structural and electrical properties of the films are presented. • Properties of CZTASSeTe thin films were related to Se vaporization temperature. • Selenized film at 600 °C presents the best crystal quality and enhanced Hall mobility.

  12. Improvement of the physical properties of ZnO/CdTe core-shell nanowire arrays by CdCl2 heat treatment for solar cells

    OpenAIRE

    Consonni, Vincent; Renet, Sébastien; Garnier, Jérôme; Gergaud, Patrice; Artús, Lluis; Michallon, Jérôme; Rapenne, Laetitia; Appert, Estelle; Kaminski-Cachopo, Anne

    2014-01-01

    Abstract CdTe is an important compound semiconductor for solar cells, and its use in nanowire-based heterostructures may become a critical requirement, owing to the potential scarcity of tellurium. The effects of the CdCl2 heat treatment are investigated on the physical properties of vertically aligned ZnO/CdTe core-shell nanowire arrays grown by combining chemical bath deposition with close space sublimation. It is found that recrystallization phenomena are induced by the CdCl2 heat treatmen...

  13. X-ray photoelectron spectroscopy and atomic force microscopy characterization of the effects of etching Zn xCd 1- xTe surfaces

    Science.gov (United States)

    George, M. A.; Azoulay, M.; Jayatirtha, H. N.; Burger, A.; Collins, W. E.; Silberman, E.

    1993-10-01

    X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM) was used for the first time to characterize the chemical composition of modified surfaces of Zn xCd 1- xTe single crystals. These surface treatments were selected for their relevance to device preparation procedures. The XPS peaks indicated an increase of the tellurium and a depletion of the cadmium concentrations upon etching in bromine methanol solution. AFM revealed the formation of pronounced Te inclusions. Higher x values correlated with a decrease in residual bromine left on the surface, while cut and polished samples had higher oxide concentrations and increased bromination of the surface than cleaved samples.

  14. Comparative acid-base properties of the surface of components of the CdTe-ZnS system in series of substitutional solid solutions and their analogs

    Science.gov (United States)

    Kirovskaya, I. A.; Kasatova, I. Yu.

    2011-07-01

    The acid-base properties of the surface of solid solutions and binary components of the CdTe-ZnS system are studied by hydrolytic adsorption, nonaqueous conductometric titration, mechanochemistry, IR spectroscopy, and Raman scattering spectroscopy. The strength, nature, and concentration of acid centers on the original surface and that exposed to CO are determined. The changes in acid-base properties in dependence on the composition of the system under investigation in the series of CdB6, ZnB6 analogs are studied.

  15. Optical properties of tellurite glasses elaborated within the TeO{sub 2}–Tl{sub 2}O–Ag{sub 2}O and TeO{sub 2}–ZnO–Ag{sub 2}O ternary systems

    Energy Technology Data Exchange (ETDEWEB)

    Linda, D. [Laboratoire de Sciences des Procédés Céramiques et de Traitements de Surface, UMR 7315 CNRS, Université de Limoges, Centre Européen de la Céramique, 12, rue Atlantis, 87068 Limoges Cedex (France); Laboratoire des Sciences des Matériaux et d’Environnement, Sfax University, Route de Soukra km 4, 3038 Sfax (Tunisia); Duclère, J.-R., E-mail: jean-rene.duclere@unilim.fr [Laboratoire de Sciences des Procédés Céramiques et de Traitements de Surface, UMR 7315 CNRS, Université de Limoges, Centre Européen de la Céramique, 12, rue Atlantis, 87068 Limoges Cedex (France); Hayakawa, T. [Field of Advanced Energy Conversion, Department of Frontier Materials, Nagoya Institute of Technology, Gokiso, Showa, Nagoya 466-8555 (Japan); Dutreilh-Colas, M. [Laboratoire de Sciences des Procédés Céramiques et de Traitements de Surface, UMR 7315 CNRS, Université de Limoges, Centre Européen de la Céramique, 12, rue Atlantis, 87068 Limoges Cedex (France); Cardinal, T. [Institut de Chimie de la Matière Condensée de Bordeaux, UPR 9048 CNRS, Université de Bordeaux, 87 avenue du Dr. A. Schweitzer, 33608 Pessac (France); and others

    2013-06-05

    Highlights: ► Nonlinear optical properties of TeO{sub 2}–Tl{sub 2}O glasses containing silver are presented. ► The evolution of the linear optical properties with Ag{sub 2}O content is discussed. ► The photoluminescence properties of new TeO{sub 2}–ZnO–Ag{sub 2}O glasses are reported. -- Abstract: The optical properties of glasses elaborated within the TeO{sub 2}–Tl{sub 2}O–Ag{sub 2}O and TeO{sub 2}–ZnO–Ag{sub 2}O ternary systems are presented. The paper is articulated in two parts. The first part concerns the TeO{sub 2}–Tl{sub 2}O–Ag{sub 2}O system, where the linear refractive index, the absorption coefficient and the optical band gap are measured as a function of the Ag{sub 2}O content. From ellipsometry measurements, it is noticed that the linear refractive index n{sub 0} remains constant up to 5 mol% in AgO{sub 0.5} and then slightly increases at higher concentrations (10 mol%). Such evolution of the refractive index was related to the higher electronic polarizability of Ag{sup +} cations compared to that of Te{sup 4+} cations, assuming that the electronic polarizability of O{sup 2−} anions remains constant. The reduction in the optical band gap value is attributed for some part to the higher quantity of non-bridging oxygen atoms induced by the depolymerization of the glass. The third order non-linear optical properties (γ and Re(χ{sup (3)}) values) of these TeO{sub 2}–Tl{sub 2}O–Ag{sub 2}O glasses are then extracted from Z-scan measurements. For glass compositions ranging from 0 to 10 mol% in AgO{sub 0.5}, the Re(χ{sup (3)}) value shifts from roughly 60 to more than 80 times that of silica, which testify to the excellent non-linear optical properties of such TeO{sub 2}–Tl{sub 2}O glasses containing silver (tellurite glasses possess intrinsic high optical non-linearity). The addition of Tl{sub 2}O induces the depolymerization of the glass framework but, on the other hand, helps to maintain the amplitude of the optical non

  16. Photoluminescence properties of the ZnO-CdO-TeO{sub 2} system doped with the Tb{sup 3+}and Yb{sup 3+} ions

    Energy Technology Data Exchange (ETDEWEB)

    Ruvalcaba-Cornejo, C. [Departamento de Investigacion en Polimeros y Materiales, Universidad de Sonora (Mexico); Flores-Acosta, M. [Universidad de Sonora, Centro de Investigacion en Fisica, Rosales y Luis Encinas s/n, colonia Centro 83000, Hermosillo, Sonora (Mexico); Elena Zayas, Ma. [Departamento de C. Quimico-Biologicas y Agropecuarias, Universidad de Sonora, Unidad Regional Sur, Navojoa, Sonora (Mexico); Lozada-Morales, R. [Facultad de Ciencias Fisico-Matematicas, Benemerita Universidad Autonoma de Puebla (Mexico); Palomino-Merino, R. [Facultad de Ciencias Fisico-Matematicas, Benemerita Universidad Autonoma de Puebla (Mexico)], E-mail: palomino@fcfm.buap.mx; Espinosa, J.E. [Facultad de Ciencias Fisico-Matematicas, Benemerita Universidad Autonoma de Puebla (Mexico); Portillo-Moreno, O. [Facultad de Ciencias Quimicas, Benemerita Universidad Autonoma de Puebla (Mexico); Martinez-Juarez, J. [Departamento de Dispositivos Semiconductores, Benemerita Universidad Autonoma de Puebla, 14 Av. Sur y Av. San Claudio, Col. San Manuel, Puebla (Mexico); Zelaya-Angel, O.; Tomas, S.A.; Soto, A.B. [Departamento de Fisica, Centro de Investigacion y de Estudios Avanzados, P.O. Box 14-740, Mexico 07360 D.F. (Mexico)

    2008-02-15

    ZnO-CdO-TeO{sub 2} was employed as a host of Tb{sup 3+} and Yb{sup 3+} ions. The matrix doped with Tb{sup 3+} presents a crystalline/amorphous structure, while the same matrix shows an amorphous structure when it is doped with Yb{sup 3+}. Optical absorption spectra, measured by using photoacoustic (PA) spectroscopy, allowed to determine the band gap, which is localized in the range 3.47-3.60 eV. Both kinds of ions Tb{sup 3+} and Yb{sup 3+} in the ZnO-CdO-TeO{sub 2} matrix show emissions that are characteristic of such ions. For Tb{sup 3+} the signals were allocated in 548, 586, 622 nm, respectively, while for Yb{sup 3+} only one signal was registered at 1000 nm.

  17. Synthesis, crystal structure and electrical properties of the tetrahedral quaternary chalcogenides CuM2InTe4 (M=Zn, Cd)

    Science.gov (United States)

    Nolas, George S.; Hassan, M. Shafiq; Dong, Yongkwan; Martin, Joshua

    2016-10-01

    Quaternary chalcogenides form a large class of materials that continue to be of interest for energy-related applications. Certain compositions have recently been identified as possessing good thermoelectric properties however these materials typically have the kesterite structure type with limited variation in composition. In this study we report on the structural, optical and electrical properties of the quaternary chalcogenides CuZn2InTe4 and CuCd2InTe4 which crystallize in the modified zinc-blende crystal structure, and compare their properties with that of CuZn2InSe4. These p-type semiconductors have direct band gaps of about 1 eV resulting in relatively high Seebeck coefficient and resistivity values. This work expands on the research into quaternary chalcogenides with new compositions and structure types in order to further the fundamental investigation of multinary chalcogenides for potential thermoelectrics applications.

  18. Performance comparison of small-pixel CdZnTe radiation detectors with gold contacts formed by sputter and electroless deposition

    Science.gov (United States)

    Bell, S. J.; Baker, M. A.; Duarte, D. D.; Schneider, A.; Seller, P.; Sellin, P. J.; Veale, M. C.; Wilson, M. D.

    2017-06-01

    Recent improvements in the growth of wide-bandgap semiconductors, such as cadmium zinc telluride (CdZnTe or CZT), has enabled spectroscopic X/γ-ray imaging detectors to be developed. These detectors have applications covering homeland security, industrial analysis, space science and medical imaging. At the Rutherford Appleton Laboratory (RAL) a promising range of spectroscopic, position sensitive, small-pixel Cd(Zn)Te detectors have been developed. The challenge now is to improve the quality of metal contacts on CdZnTe in order to meet the demanding energy and spatial resolution requirements of these applications. The choice of metal deposition method and fabrication process are of fundamental importance. Presented is a comparison of two CdZnTe detectors with contacts formed by sputter and electroless deposition. The detectors were fabricated with a 74 × 74 array of 200 μm pixels on a 250 μm pitch and bump-bonded to the HEXITEC ASIC. The X/γ-ray emissions from an 241Am source were measured to form energy spectra for comparison. It was found that the detector with contacts formed by electroless deposition produced the best uniformity and energy resolution; the best pixel produced a FWHM of 560 eV at 59.54 keV and 50% of pixels produced a FWHM better than 1.7 keV . This compared with a FWHM of 1.5 keV for the best pixel and 50% of pixels better than 4.4 keV for the detector with sputtered contacts.

  19. Electronic structure and magnetic properties of Zn1-xTMxTe (TM = Fe, Co, Ni) for 0 ≤ x ≤ 1 alloys

    Science.gov (United States)

    Mahmood, Q.; Faridi, A.; Mahmood, Asif; Rashid, M.; Hassan, M.; Noor, N. A.

    2016-07-01

    In this study, we employed Wu-Cohen generalized gradient approximation (WC-GGA) to calculate the structural stability, whereas the modified Becke and Johnson local-density approximation (mBJLDA) functional has been used to determine the electronic and magnetic properties of Zn1-xTMxTe (TM = Fe, Co, Ni) alloys in the x range 0-1. Structural optimization in paramagnetic (PM), ferromagnetic (FM) and anti-ferromagnetic (AFM) orders has been done to check the state stability of the doped alloys and then verified with the calculated values of enthalpy of formation (ΔH). The erections of enthalpies were negative which gave the evidence of structural stability in FM phase for all three alloys. Our calculated values of equilibrium lattice constants decreased by increasing the TM concentration, in Zn1-xTMxTe (TM = Fe, Co, Ni) alloys. We found ferromagnetism caused by the spin polarization of electron in TM-d states in the studied alloys by analyzing the calculated band structure (BS), density of state (DOS) and magnetic moments. The calculated ferromagnetism was also explained from the Zener model. Due to the tetrahedral crystal field, the 3d-state of TM splits into double eg and triple degenerate t2g states and our calculated results show the strong pd interaction is only due to t2g. Furthermore, we predict exchange splitting energies Δx(d) and Δx(pd) and exchange constants (N0α) and (N0β). Their calculated values are consistent with typical magneto-optical experiment. The magnetic moments of TM ions were reduced by increasing TM concentration in Zn1-xTMxTe (TM = Fe, Co, Ni) alloys, while trivial local magnetic moments at Zn and Te sites were also found.

  20. ZnTe结构相变、电子结构和光学性质的研究∗%Structural phase transition, electronic structures and optical prop erties of ZnTe

    Institute of Scientific and Technical Information of China (English)

    胡永金; 吴云沛; 刘国营; 罗时军; 何开华

    2015-01-01

    The equations of state and phase transition of ZnTe in zinc blende (ZB) and cinnabar (CB) structures under high pressure are investigated by the projected augmented wave method in the scheme of density functional theory. The primitive cell volumes, electronic structures and optical properties are also predicted before and after phase transition. The variations of the calculated total energy with volume, for the structures of ZB and CB, yield the information about the static equation of state and phase stability. The results show that the ZB phase of ZnTe has lower energy, and is more stable than its CB phase. The pressure-induced transition occurs along the common tangent line connecting the tangential points on the two enthalpy-volume curves. The calculations show that the phase transition pressure is 8.6 GPa from the ZB structure to the CB structure. The value is also compatible with those of other available theoretical and experimental results. Just before the ZB phase is transferred to the CB phase at about 8.6 GPa, the volume is reduced by 13.0%relative to the former volume at the ambient pressure condition. The calculated critical volumes and volume compressibilities by using two methods agree well with other results in the literature. The lattice parameters and equations of state of the two structures are also obtained. Metallization case of other similar materials such as ZnS caused by high pressure does not occur here. The CB phase has the behavior of indirect band gap with 0.98 eV along the symmetry of G → K . After phase transition, the distributions of density of states of Zn and Te atoms of the CB structure shift towards lower energy, especially in the conduction band bottom, and the band gap decreases. Energy level overlapping is more obvious in the CB structure, and orbital hybridizations still exist, that is the reason why it is the stable phase under high pressure condition. Stronger orbital hybridization helps the transitions between Te 5p and

  1. Microwave irradiation synthesis of functionalized CdTe/ZnS quantum dots and its interaction with sparfloxacin%微波辐射法制备水溶性CdTe/ZnS量子点及其与司帕沙星的作用

    Institute of Scientific and Technical Information of China (English)

    沈坤; 侯明; 那佳

    2011-01-01

    The water-soluble CdTe nanocrystals capped with ZnS were synthesized using mercaptoacetic acid as stabilizer by microwave with controllable temperature. Ultraviolet visible spectra and fluorescence spectra of CdTe/ZnS nanoparticles for different pH values, reaction time and temperatures, different CdTe/S2- ratios were investigated. Obviously red shifts of the fluorescence emission peak were observed as the reflux time prolonged.Fluorescence quenching was observed between trace sparfloxacin (SPFX)and the functionalized CdTe/ZnS QDs with phosphoric acid as the buffer solution at pH 7. 17. The response is linearly proportional to the concentration of SPFX from 0. 05 to 3.0 μg/mL with correlation coefficient of r =0. 9954 and the detection limit of 0. O1 μg/mL. The functionalized nanoparticles are hopeful to be used as fluorescence probes in detecting trace SPFX.%以巯基乙酸为稳定剂,通过微波加热在水溶液中制备了CdTe/znS量子点.研究了pH值、反应时间、反应温度和cdTe/s浓度比等合成条件对cdTe量子点荧光光谱的影响.以CdTe/ZnS量子点为探针,探讨了喹诺酮类抗生素司帕沙星与量子点的荧光猝灭作用,结果表明,在最佳实验条件下,其线性范围为0.05~3.00μg/mL,线性相关系数为0.9954,检出限为0.01μg/mL,可将CdTe/ZnS量子点荧光探针用于司帕沙星的测定.

  2. Nearly lattice matched all wurtzite CdSe/ZnTe type II core-shell nanowires with epitaxial interfaces for photovoltaics.

    Science.gov (United States)

    Wang, Kai; Rai, Satish C; Marmon, Jason; Chen, Jiajun; Yao, Kun; Wozny, Sarah; Cao, Baobao; Yan, Yanfa; Zhang, Yong; Zhou, Weilie

    2014-04-07

    Achieving a high-quality interface is of great importance in core-shell nanowire solar cells, as it significantly inhibits interfacial recombination and thus improves the photovoltaic performance. Combining thermal evaporation of CdSe and pulsed laser deposition of ZnTe, we successfully synthesized nearly lattice matched all wurtzite CdSe/ZnTe core-shell nanowires on silicon substrates. Comprehensive morphological and structural characterizations revealed that a wurtzite ZnTe shell layer epitaxially grows over a wurtzite CdSe core nanowire with an abrupt interface. Further optical studies confirmed a high-quality interface and demonstrated efficient charge separation induced by the type-II band alignment. A representative photovoltaic device has been demonstrated and yielded an energy-conversion efficiency of 1.7% which can be further improved by surface passivation. The all-wurtzite core-shell nanowire with an epitaxial interface offers an attractive platform to explore the piezo-phototronic effect and promises an efficient hybrid nano-sized, energy harvesting system.

  3. Point Defects in Pb-, Bi-, and In-Doped CdZnTe Detectors:Deep-Level Transient Spectroscopy (DLTS) Measurements

    Energy Technology Data Exchange (ETDEWEB)

    Bolotnikov A.; GUL, R.; KEETER, K.; RODRIGUEZ, R.; BOLOTNIKOV, A.E.; HOSSAIN, A.; CAMARDA, G.S.; KIM, K.H.; YANG, Y.; CUI, Y.; CARCELEN, V.; FRANC, J.; LI, Z.; JAMES, R.B.

    2012-02-29

    We studied, by current deep-level transient spectroscopy (I-DLTS), point defects induced in CdZnTe detectors by three dopants: Pb, Bi, and In. Pb-doped CdZnTe detectors have a new acceptor trap at around 0.48 eV. The absence of a V{sub Cd} trap suggests that all Cd vacancies are compensated by Pb interstitials after they form a deep-acceptor complex [[Pb{sub Cd}]{sup +}-V{sub Cd}{sup 2-}]{sup -}. Bi-doped CdZnTe detectors had two distinct traps: a shallow trap at around 36 meV and a deep donor trap at around 0.82 eV. In detectors doped with In, we noted three well-known traps: two acceptor levels at around 0.18 eV (A-centers) and 0.31 eV (V{sub Cd}), and a deep trap at around 1.1 eV.

  4. Using CdTe/ZnSe core/shell quantum dots to detect DNA and damage to DNA

    Science.gov (United States)

    Moulick, Amitava; Milosavljevic, Vedran; Vlachova, Jana; Podgajny, Robert; Hynek, David; Kopel, Pavel; Adam, Vojtech

    2017-01-01

    CdTe/ZnSe core/shell quantum dot (QD), one of the strongest and most highly luminescent nanoparticles, was directly synthesized in an aqueous medium to study its individual interactions with important nucleobases (adenine, guanine, cytosine, and thymine) in detail. The results obtained from the optical analyses indicated that the interactions of the QDs with different nucleobases were different, which reflected in different fluorescent emission maxima and intensities. The difference in the interaction was found due to the different chemical behavior and different sizes of the formed nanoconjugates. An electrochemical study also confirmed that the purines and pyrimidines show different interactions with the core/shell QDs. Based on these phenomena, a novel QD-based method is developed to detect the presence of the DNA, damage to DNA, and mutation. The QDs were successfully applied very easily to detect any change in the sequence (mutation) of DNA. The QDs also showed their ability to detect DNAs directly from the extracts of human cancer (PC3) and normal (PNT1A) cells (detection limit of 500 pM of DNA), which indicates the possibilities to use this easy assay technique to confirm the presence of living organisms in extreme environments. PMID:28243089

  5. High-Efficiency CdZnTe Position-Sensitive VFG Gamma-Ray Detectors for Safeguards Applications

    Energy Technology Data Exchange (ETDEWEB)

    Bolotnikov, Aleksey E. [Brookhaven National Lab. (BNL), Upton, NY (United States); James, Ralph B. [Brookhaven National Lab. (BNL), Upton, NY (United States); Cui, Y. [Brookhaven National Lab. (BNL), Upton, NY (United States); De Geronimo, G. [Brookhaven National Lab. (BNL), Upton, NY (United States); Vernon, E. [Brookhaven National Lab. (BNL), Upton, NY (United States); Camarda, G. S. [Brookhaven National Lab. (BNL), Upton, NY (United States); Hossain, A. [Brookhaven National Lab. (BNL), Upton, NY (United States); Yang, G. [Brookhaven National Lab. (BNL), Upton, NY (United States); Indusi, J. [Brookhaven National Lab. (BNL), Upton, NY (United States); Boyer, Brian [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

    2015-09-30

    The goal of this project is to incorporate a Cadmium-Zinc-Telluride (CdZnTe or CZT) detector (with 1% or better resolution) into a bench-top prototype for isotope identification and related safeguards applications. The bench-top system is based on a 2x2 array of 6x6x20 mm3 position-sensitive virtual Frisch-grid (VFG) CZT detectors. The key features of the array are that it allows for the use of average-grade CZT material with a moderate content of defects, and yet it provides high energy resolution, 1% FWHM at 662 keV, large effective area, and low-power consumption. The development of this type of 3D detector and new instruments incorporating them is motivated by the high cost and low availability of large, > 1 cm3, CZT crystals suitable for making multi-pixel detectors with acceptable energy resolution and efficiency.

  6. Pressure dependence of elastic properties of ZnX (X = Se, S and Te): Role of charge transfer

    Indian Academy of Sciences (India)

    Dinesh Varshney; P Sharma; N Kaurav; R K Singh

    2005-12-01

    An effective interaction potential (EIOP) is developed to invoke the pressure induced phase transition from zinc blende (3) to rocksalt (1) structure and anharmonic properties in ZnX (X = Se, S, Te) semiconductors. The effective interaction potential incorporates the long range Coulomb interaction, van der Waals interaction and short-range repulsive interaction up to second neighbour ions within the Hafemeister and Flygare approach as well as the charge transfer effects caused by the electron-shell deformation of the overlapping ions. The van der Waals coefficients are computed by the Slater Kirkwood variation method as a first step. Later on, we evaluate volume collapse, second order and third order elastic constants with pressure pointing to the systematic trends in all compounds of zinc blende structure and their thermal properties such as force constant, Gruneisen parameter, compressibility, Debye temperature etc. The vast volume discontinuity in pressure–volume (PV) phase diagram identifies the structural phase transition from zinc blende (3) to rock salt (1) structure and is consistent with those revealed from earlier reports.

  7. A 12-bit 1 MS/s SAR-ADC for multi-channel CdZnTe detectors

    Science.gov (United States)

    Wei, Liu; Tingcun, Wei; Bo, Li; Panjie, Guo; Yongcai, Hu

    2015-04-01

    This paper presents a low power, area-efficient and radiation-hardened 12-bit 1 MS/s successive approximation register (SAR) analog-to-digital converter (ADC) for multi-channel CdZnTe (CZT) detector applications. In order to improve the SAR-ADC's accuracy, a novel comparator is proposed in which the offset voltage is self-calibrated and also a new architecture for the unit capacitor array is proposed to reduce the capacitance mismatches in the charge-redistribution DAC. The ability to radiation-harden the SAR-ADC is enhanced through circuit and layout design technologies. The prototype chip was fabricated using a TSMC 0.35 μm 2P4M CMOS process. At a 3.3/5 V power supply and a sampling rate of 1 MS/s, the proposed SAR-ADC achieves a peak signal to noise and distortion ratio (SINAD) of 67.64 dB and consumes only 10 mW power. The core of the prototype chip occupies an active area of 1180 × 1080 μm2. Project supported by the Special-Funded Program on National Key Scientific Instruments and Equipment Development (No. 2011YQ040082).

  8. Improving performance of a CdZnTe imaging array by mapping the detector with gamma rays

    CERN Document Server

    Marks, D G; Barrett, H H; Tüller, J; Woolfenden, J M

    1999-01-01

    We can greatly reduce image artifacts in our pixellated CdZnTe arrays by mapping imperfect regions with a narrow collimated beam of gamma rays. Portions of our detectors produce signals that agree well with simulations of gamma-ray interactions, but there are many examples of structures in the material that respond unpredictably to gamma rays. We mapped some of these imperfect regions using 60 and 140 keV gamma-ray beams, recording a 7x7 set of pixel signals for each interaction. The pixel pitch was 380 mu m. We used the mapped data to estimate the probability density function (PDF) of the pixel signals for each interaction position. Images were taken on the mapped sections, storing each gamma ray as a list of pixel signals. Images could be formed by either estimating each gamma-ray interaction position individually or using the entire set of image data in a single iterative computation using the expectation-maximization (EM) algorithm. At 60 keV individual interaction positions were estimated by fitting the ...

  9. One-dimensional photonic crystal with spectrally selective low infrared emissivity fabricated with Te and ZnSe

    Science.gov (United States)

    Zhang, Ji-Kui; Shi, Jia-Ming; Zhao, Da-Peng; Chen, Yu-Zheng

    2017-07-01

    To restrain the infrared radiation from high temperature objects to decrease the probability of being discovered by infrared detectors operating in the mid- and far-infrared atmospheric windows, we design a one-dimensional heterostructure photonic crystal (PC) using low-cost coating materials Te and ZnSe, and test its reflection spectra and radiant temperature. The tested results show that this PC has high average reflectance in 3- to 5-μm and 8- to 14-μm wavebands, which is 86.72% and 72.91%, respectively, and the corresponding emissivity is 0.072 and 0.194, respectively. The radiant temperatures of the PC are always lower than those of the background, with the maximal difference of the radiant temperature being 31.97°C corresponding to a background radiant temperature of 75.64°C. The study confirms that the deposited PC can effectively decrease the infrared radiation in mid- and far-infrared bands.

  10. ZnTe nanoparticles formed by ion implantation in a SiO{sub 2} layer on silicon

    Energy Technology Data Exchange (ETDEWEB)

    Chemam, R. E-mail: che_raf@yahoo.fr; Bouabellou, A.; Grob, J.J.; Muller, D.; Schmerber, G

    2004-02-01

    Ion implantation is a very simple and suitable way, compatible with the silicon technology, to form nanometric precipitates in materials. Sequential high dose (3-5 x 10{sup 16} cm{sup -2}) implantations of tellurium and zinc ions have been performed in a 250 nm thick SiO{sub 2} layer thermally grown on <1 1 1> silicon. Their respective energies (180 and 104 keV) have been chosen to produce 5-10 at.% profiles overlapping at a mean depth of about 80 nm. Subsequent thermal treatments (800-1100 deg. C) lead to the formation of nanometric precipitates of the compound semiconductor ZnTe. Their size, crystalline structure and depth distribution have been studied as a function of annealing temperature using X-ray diffraction, transmission electron microscopy and Rutherford backscattering spectrometry. For the highest temperatures, the nanoparticles progressively redistribute in two bands located close to the surface and interface. Their mean diameter ranges between 13 and 26 nm, as a function of annealing temperature.

  11. High-Efficiency CdZnTe Position-Sensitive VFG Gamma-Ray Detectors for Safeguards Applications

    Energy Technology Data Exchange (ETDEWEB)

    Bolotnikov, Aleksey E. [Brookhaven National Lab. (BNL), Upton, NY (United States); James, Ralph B. [Brookhaven National Lab. (BNL), Upton, NY (United States); Cui, Y. [Brookhaven National Lab. (BNL), Upton, NY (United States); De Geronimo, G. [Brookhaven National Lab. (BNL), Upton, NY (United States); Vernon, E. [Brookhaven National Lab. (BNL), Upton, NY (United States); Camarda, G. S. [Brookhaven National Lab. (BNL), Upton, NY (United States); Hossain, A. [Brookhaven National Lab. (BNL), Upton, NY (United States); Yang, G. [Brookhaven National Lab. (BNL), Upton, NY (United States); Indusi, J. [Brookhaven National Lab. (BNL), Upton, NY (United States); Boyer, Brian [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

    2015-09-30

    The goal of this project is to incorporate a Cadmium-Zinc-Telluride (CdZnTe or CZT) detector (with 1% or better resolution) into a bench-top prototype for isotope identification and related safeguards applications. The bench-top system is based on a 2x2 array of 6x6x20 mm3 position-sensitive virtual Frisch-grid (VFG) CZT detectors. The key features of the array are that it allows for the use of average-grade CZT material with a moderate content of defects, and yet it provides high-energy resolution, 1% FWHM at 662 keV, large effective area, and low-power consumption. The development of this type of 3D detector and new instruments incorporating them is motivated by the high cost and low availability of large, > 1 cm3, CZT crystals suitable for making multi-pixel detectors with acceptable energy resolution and efficiency.

  12. Internal electric-field-lines distribution in CdZnTe detectors measured using X-ray mapping

    Energy Technology Data Exchange (ETDEWEB)

    Bolotnikov,A.E.; , .; Camarda, G.S.; Cui, Y.; Hossain, A.; Yang, G.; Yao, H.W.; James, R.B.

    2009-10-19

    The ideal operation of CdZnTe devices entails having a uniformly distributed internal electric field. Such uniformity especially is critical for thick long-drift-length detectors, such as large-volume CPG and 3-D multi-pixel devices. Using a high-spatial resolution X-ray mapping technique, we investigated the distribution of the electric field in real devices. Our measurements demonstrate that in thin detectors, <5 mm, the electric field-lines tend to bend away from the side surfaces (i.e., a focusing effect). In thick detectors, >1 cm, with a large aspect ratio (thickness-to-width ratio), we observed two effects: the electric field lines bending away from or towards the side surfaces, which we called, respectively, the focusing field-line distribution and the defocusing field-line distribution. In addition to these large-scale variations, the field-line distributions were locally perturbed by the presence of extended defects and residual strains existing inside the crystals. We present our data clearly demonstrating the non-uniformity of the internal electric field.

  13. Using the TOF method to measure the electron lifetime in long-drift CdZnTe detectors (Conference Presentation)

    Science.gov (United States)

    Bolotnikov, Aleksey E.; Camarda, Giuseppe S.; Chen, Eric; Cui, Yonggang; Gul, Rubi; Dedic, Václav; De Geronimo, Gianluigi; Fried, Jack; Hossain, Anwar; MacKenzie, Jason M.; Sellin, Paul; Taherion, Saeid; Vernon, Emerson; Yang, Ge; El-hanany, Uri; James, Ralph B.

    2016-09-01

    The traditional method for electron lifetime measurements of CdZnTe (CZT) detectors relies on using the Hecht equation. The procedure involves measuring the dependence of the detector response on the applied bias and applying the Hecht equation to evaluate the mu-tau product, which in turn can be converted into the carrier lifetime if the mobility is known. Despite general acceptance of this technique, which is very convenient for comparative testing of different CZT materials, the assumption of a constant electric field inside a detector is unjustified. In the Hecht equation, this assumption means that the drift time would be a linear function of the drift distance. This condition is rarely fulfilled in practice at low applied biases where the Hecht equation is most sensitive to the mu-tau product. As a result, researchers usually take measurements at relatively high biases, which work well in the case of the low mu-tau material, Technologies. The TOF-based techniques are traditionally used for monitoring the electronegative impurity concentrations in noble gas detectors by measuring the electron lifetimes. We found the electron mu-tau product of tested crystals is in the range 0.1-0.2 cm2/V, which is an order of the magnitude higher than any value previously reported for CZT material. In this work, we reported the measurement procedure and the results. We will also discuss the applicability criteria of the Hecht equation for measuring the electron lifetime in high mu-tau product CZT.

  14. Structural and optical properties of Zn1−xNixTe thin films prepared by electron beam evaporation technique

    Directory of Open Access Journals (Sweden)

    Arshad Mahmood

    2015-02-01

    Full Text Available Zn1−xNixTe thin films with different composition (x=0.0, 0.05, 0.10, 0.15 and 0.20 were deposited on glass substrate by electron beam evaporation technique followed by its characterization using advanced structural and optical analysis techniques. Structural properties of the prepared thin films were studied by X-ray diffraction (XRD. The XRD patterns revealed that the binary compounds transformed into a ternary compound with cubic structure having preferred orientation along the c-direction with (111 planes. Composition analysis of the films was determined by energy dispersive analysis of X-rays (EDAX and found to be in agreement with the precursor composition. Optical properties such as extinction coefficient (k and band gap energy of these films were examined by using a spectroscopic ellipsometer. It was found that the extinction coefficient (k increased with the addition of Ni content in the alloy. In comparison, the band gap energy was also determined by using transmission spectra and found to be agreed with that of the ellipsometric results. These analyses confirm that the band gap energy decreases with the increase of Ni content in the alloy.

  15. PENGEMBANGAN APLIKASI BERBASIS MATLAB UNTUK MENGANALISIS SIFAT LASING KACA Te-Zn-Bi YANG TERDADAH ION Er3+

    Directory of Open Access Journals (Sweden)

    Rudi Susanto

    2016-06-01

    Full Text Available Tujuan penelitian ini adalah mengembangkan  aplikasi untuk menganalis sifat lasing kaca bahan penguat optik dengan parameter Judd-Ofelt. Pengembangan aplikasi menggunakan kaidah Software Development Life Cycle (SDLC yang terdiri dari analisis, perancangan, pembangunan dan pengujian. Perancangan aplikasi mengunakan flowchart yang sesuai dengan kebutuhan dan pembangunan aplikasi mengunakan GUI matlab. Pengujian aplikasi mengunakan metode black box serta perbandingan hasil aplikasi dan perhitungan manual. Hasil pengujian menunjukan bahwa aplikasi mampu bekerja sesuai fungsionalitasnya yaitu digunakan untuk menganalisis sifat lasing kaca Te-Zn-Bi dengan doping Er3+ yang ditunjukan dengan output aplikasi berupa  (1 Parameter , (2 Probabilitas Transisi, (3 Branching Ratio, (4 Life Time, (5 Omega4/ Omega6 serta(6 Aem/AESA. Output aplikasi tersebut merupakan parameter yang digunakan untuk menganalis sifat lasing sesuai parameter Judd Ofelt. Hasil perbandingan perhitungan manual dan aplikasi dapat diketahui bahwa rata-rata kesalahan relative adalah 1.2476%. Dari hasil pengujian dapat disimpulkan bahwa aplikasi dapat digunakan untuk menganalisis sifat lasing.

  16. Structural and luminescence properties of heavily doped radio-frequency-sputtered ZnTe:Cu thin films

    Energy Technology Data Exchange (ETDEWEB)

    El Akkad, Fikry, E-mail: f.elakkad@ku.edu.kw; Mathai, Maneesh [Physics Department, Kuwait University, P.O. Box 5969, Safat 13060 (Kuwait)

    2015-09-07

    We report on the structural and luminescence properties of ZnTe:Cu films containing Cu concentrations up to 12 at. % and prepared using rf magnetron sputtering. The lattice parameters of the various crystalline phases prevailing at different Cu concentrations (cubic, hexagonal, and orthorhombic) are calculated and compared with literature results on films prepared using other techniques. Study of the steady state photoluminescence and excitation spectra revealed the presence of three donor impurities involved in the well-known band at ∼1.70 eV (peak L) attributed to self-activated transition. One of these donors is merging partially with the conduction band and the two others have mutually overlapping density of states with maxima at 0.29 eV and 0.45 eV below the conduction band edge. Another donor that is resonant with the conduction continuum is responsible for a higher energy emission band (peak H). The density of states of this donor has a maximum at 0.57 eV above the conduction band edge for a copper concentration of 8.2 at. %. The emission peak H undergoes a blue shift and its intensity increases sharply relative to the intensity of the L peak with the increase of Cu concentration. Moreover, the H emission extends to photon energies higher than the band gap. A possible interpretation of the behaviour of the peak H in terms of recombination involving the resonant states is suggested.

  17. Effect of de-trapping on carrier transport process in semi-insulating CdZnTe

    Science.gov (United States)

    Guo, Rong-Rong; Jie, Wan-Qi; Zha, Gang-Qiang; Xu, Ya-Dong; Feng, Tao; Wang, Tao; Du, Zhuo-Tong

    2015-06-01

    The effect of de-trapping on the carrier transport process in the CdZnTe detector is studied by laser beam-induced transient current (LBIC) measurement. Trapping time, de-trapping time, and mobility for electrons are determined directly from transient waveforms under various bias voltages. The results suggest that an electric field strengthens the capture and emission effects in trap center, which is associated with field-assisted capture and the Poole-Frenkel effect, respectively. The electron mobility is calculated to be 950 cm2/V·s and the corresponding electron mobility-lifetime product is found to be 1.32×10-3 cm2/V by a modified Hecht equation with considering the surface recombination effect. It is concluded that the trapping time and de-trapping time obtained from LBIC measurement provide direct information concerning the transport process. Project supported by the National Instrumentation Program, China (Grant No. 2011YQ040082), the National Natural Science Foundation of China (Grant Nos. 61274081, 51372205, and 51202197), the National 973 Project of China (Grant No. 2011CB610400), the China Postdoctoral Science Foundation (Grant No. 2014M550509), and the 111 Project of China (Grant No. B08040).

  18. Study on the behavior of the heavy metals Cu, Cr, Ni, Zn, Fe, Mn and {sup 137}Cs in an estuarine ecosystem using Mytilus galloprovincialis as a bioindicator species: the case of Thermaikos gulf, Greece

    Energy Technology Data Exchange (ETDEWEB)

    Catsiki, Vassiliki-Angelique [Hellenic Centre for Marine Research, Mavro Lithari, 46.7 Km Athens-Sounio, Anavyssos Attikis 19013 (Greece)]. E-mail: cats@ath.hcmr.gr; Florou, H. [National Centre for Scientific Research ' Demokritos' , Ag. Paraskevi 153 10, Athens (Greece)

    2006-07-01

    Mussels are worldwide recognized as pollution bioindicators and used in Mussel Watch programs, because they accumulate pollutants in their tissues at elevated levels in relation to pollutant biological availability in the marine environment. The present study deals with the use of Mytilus galloprovincialis as a local bioindicator of heavy metal and {sup 137}Cs contamination in an estuarine ecosystem (Thermaikos gulf, Greece in Eastern Mediterranean). M. galloprovincialis samples were collected monthly from two aquaculture farms during the period April to October 2000. Analyses for the heavy metals Cu, Cr, Ni, Zn, Fe, Mn and {sup 137}Cs showed that the concentrations measured were low and similar to those from other non-polluted Mediterranean areas. In terms of the two sampling stations, there were no statistically significant differences between them. On the contrary, the seasonal evolution of either heavy metals or {sup 137}Cs levels presented high variation. The levels were found to increase during the cold period of the year, especially for Cu, Zn, Mn and Cr which are essential for life. Stable metals were positively inter-related and moreover, metals more involved in biochemical activities seem to present more correlations than others with less significant role in the metabolism of the organisms.

  19. Contamination of terrestrial gastropods, Helix aspersa maxima, with {sup 137}Cs, {sup 85}Sr, {sup 133}Ba and {sup 123m}Te by direct, trophic and combined pathways

    Energy Technology Data Exchange (ETDEWEB)

    Madoz-Escande, C. [Laboratory of Radioecology and Ecotoxicology, Institute for Radioprotection and Nuclear Safety, IRSN/DEI/SECRE/LRE, Cadarache, Bld 186, BP 3, 13115 St-Paul-lez-Durance Cedex (France)]. E-mail: chantal.madoz-escande@irsn.fr; Simon, O. [Laboratory of Radioecology and Ecotoxicology, Institute for Radioprotection and Nuclear Safety, IRSN/DEI/SECRE/LRE, Cadarache, Bld 186, BP 3, 13115 St-Paul-lez-Durance Cedex (France)

    2006-07-01

    {sup 137}Cs, {sup 85}Sr, {sup 133}Ba and {sup 123m}Te contaminations of terrestrial gastropods, Helix aspersa maxima, by direct deposition, labelled food ingestion or combined (trophic and direct pathways) exposure were carried out under laboratory conditions. The aim of this study was to compare the three contamination pathways: direct, trophic and combined, in terms of individual mortality, radionuclide uptake, depuration and distribution in the tissues. An initial group of 30 snails (2 years old) was exposed to radioactive aerosols during a 20-h period. These aerosols were assumed to be representative of those that would be released during a nuclear accident occurring in a PWR. A second group of 50 snails (same age) was submitted to an ingestion of commercial food contaminated by the same aerosols, twice a week for 21 days (flour at a feeding rate of about 0.2 g). A third group of 40 snails was submitted to a combined exposure: exposure to radioactive aerosols (20 h), followed by ingestion of flour contaminated by the same aerosols, twice a week for 21 days. No significant difference between the three groups and a reference group of 10 snails was observed, neither in growth nor in mortality. Concerning the direct pathway, at the end of direct deposition (about 1 day after the beginning), cesium was the most bioavailable element, distributed rather homogeneously throughout the whole body (13% of the total Cs in all organs excepting the digestive system and 28% in the muscle). Strontium was measured in the shell (about 70%). Barium was found in the muscle (20%) and in the shell (65%). Tellurium was mainly present in the shell (70%) and in the digestive system (20%). After 21 days of depuration, the faeces eliminated 42% of the Te. As for contamination by ingestion, Te mainly accumulated in the digestive system (72% of Te present in the total body), Ba accumulated in the muscle (75%) and Sr in the shell (70%). Concerning contamination by combined pathways, at the

  20. Cancer Cell Targeting Using Folic Acid/Anti-HER2 Antibody Conjugated Fluorescent CdSe/CdS/ZnS-Mercaptopropionic Acid and CdTe-Mercaptosuccinic Acid Quantum Dots.

    Science.gov (United States)

    Singh, Gurpal; Kumar, Manoj; Soni, Udit; Arora, Vikas; Bansal, Vivek; Gupta, Dikshi; Bhat, Madhusudan; Dinda, Amit K; Sapra, Sameer; Singh, Harpal

    2016-01-01

    CdSe/CdS/ZnS and CdTe quantum dots (QDs) were synthesized by successive ion layer adsorption and reaction (SILAR) technique and direct aqueous synthesis respectively using thiol stabilizers. Synthesized CdSe/CdS/ZnS and CdTe QDs stabilized with 3-mercaptopropionic acid (MPA) and mercaptosuccinic acid (MSA) were used as fluorescent labels after conjugation with folic acid (FA) and anti-HER2 antibodies. Photoluminescence quantum yield of folated CdSe/CdS/ZnS-MPA and CdTe-MSA QDs was 59% and 77% than that of non-folated hydrophilic QDs. The folate receptor-mediated delivery of folic acid-conjugated CdTe-MSA and CdSe/CdS/ZnS-MPA QDs showed higher cellular internalization as observed by confocal laser scanning microscopic studies. Folated and non-folated CdTe-MSA QDs were highly toxic and exhibited only 10% cell viability as compared to > 80% cell viability with CdSe/CdS/ZnS-MPA QDs over the concentration ranging from 3.38 to 50 pmoles. Immunohistochemistry (IHC) results of human breast cancer tissue samples showed positive results with anti-HER2 antibody conjugated CdSe/CdS/ZnS-MPA QDs with better sensitivity and specificity as compared to conventional IHC analysis using diaminobenzedene staining.

  1. Metal mono-chalcogenides ZnX and CdX (X = S, Se and Te) monolayers: Chemical bond and optical interband transitions by first principles calculations

    Science.gov (United States)

    Safari, Mandana; Izadi, Zohreh; Jalilian, Jaafar; Ahmad, Iftikhar; Jalali-Asadabadi, Saeid

    2017-02-01

    In this paper, we explore the structural, electronic and optical properties of ZnX and CdX (X = S, Se and Te) compounds in the two-dimensional (2D) graphene-like structure using the full potential augmented plane waves plus local orbitals (FP-APW + lo) method. Unlike their bulk phase, they are optically inactive because of their indirect band gap nature except CdS and ZnS. These two compounds maintain their direct band gap nature and hence are optically active. The static dielectric constants for these monolayers illustrate increasing trend with decrease in the band gap values. Furthermore, an acceptable description of electron transitions in these monolayers is accomplished according to the imaginary parts of the dielectric functions and absorption spectra in ZnS and CdS as examples of each group of CdX and ZnX. The results presented in this article revealed that ZnS and CdS in the 2D structure can be effectively used in optoelectronic devices such as solar cell materials and so forth.

  2. Investigation of inhomogeneities in Ga, Cd and Zn - doped Pbsub(1-x)Snsub(x)Te (x=0,00 and 0,20) crystals by the method of Auger electron spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Gas' kov, A.M.; Lisina, N.G.; Zlomanov, V.P.; NovoseloVa, A.V. (Moskovskij Gosudarstvennyj Univ. (USSR))

    An Auger electron microanalysis of doped crystal Pbsub(1-x)Snsub(x)Te is made using the Jamp-10 Jeol device with an analyser of cycindric mirror type. The crystals have been doped with Ga, Cd and Zn both in the process of growing from vapour and by means of diffusion annealing. Auger electron spectra have been studied in high vacuum (10/sup -9/ - 10/sup -10/ mm Hg) in the range of 70-1200 eV under the following conditions: the energy of electron beam is 5 keV, the current across the sample is 10/sup -8/ - 10/sup -9/ A. A conclusion is made that PbTe and Pbsub(0,8)Snsub(0,2)Te crystals doped by Ga, Cd and Zn both in the process of growing and by means of the diffusion annealing are characterized by inhomogeneous distribution of impurities. Gallium segregations in the vicinity of low-angle boundaries and dislocations in PbTe (Ga) tin- and lead-enriched inclusions in Pbsub(0,8)Snsub(0,2)Te (Cd), and ZnTe inclusions in Pbsub(0,8)Snsub(0,2)Te (Zn) samples are found.

  3. Using CdTe/ZnSe core/shell quantum dots to detect DNA and damage to DNA

    Directory of Open Access Journals (Sweden)

    Moulick A

    2017-02-01

    Full Text Available Amitava Moulick,1,2 Vedran Milosavljevic,1,2 Jana Vlachova,1,2 Robert Podgajny,3 David Hynek,1,2 Pavel Kopel,1,2 Vojtech Adam1,2 1Department of Chemistry and Biochemistry, Mendel University, 2Central European Institute of Technology, Brno University of Technology, Brno, Czech Republic; 3Faculty of Chemistry, Jagiellonian University, Krakow, Poland Abstract: CdTe/ZnSe core/shell quantum dot (QD, one of the strongest and most highly luminescent nanoparticles, was directly synthesized in an aqueous medium to study its individual interactions with important nucleobases (adenine, guanine, cytosine, and thymine in detail. The results obtained from the optical analyses indicated that the interactions of the QDs with different nucleobases were different, which reflected in different fluorescent emission maxima and intensities. The difference in the interaction was found due to the different chemical behavior and different sizes of the formed nanoconjugates. An electrochemical study also confirmed that the purines and pyrimidines show different interactions with the core/shell QDs. Based on these phenomena, a novel QD-based method is developed to detect the presence of the DNA, damage to DNA, and mutation. The QDs were successfully applied very easily to detect any change in the sequence (mutation of DNA. The QDs also showed their ability to detect DNAs directly from the extracts of human cancer (PC3 and normal (PNT1A cells (detection limit of 500 pM of DNA, which indicates the possibilities to use this easy assay technique to confirm the presence of living organisms in extreme environments. Keywords: nanoparticles, nucleobases, biosensor, fluorescence, mutation

  4. Structural characterization of the high-temperature modification of the Cu{sub 2}ZnGeTe{sub 4} quaternary semiconductor compound

    Energy Technology Data Exchange (ETDEWEB)

    Nieves, L.; Marcano, G.; Power, C.; Rincon, C. [Centro de Estudios de Semiconductores, Departamento de Fisica, Facultad de Ciencias, Universidad de Los Andes, Merida, 5101 (Venezuela, Bolivarian Republic of); Delgado, G.E. [Laboratorio de Cristalografia, Departamento de Quimica, Facultad de Ciencias, Universidad de Los Andes, Merida, 5101 (Venezuela, Bolivarian Republic of); Lopez-Rivera, S.A. [Grupo de Fisica Aplicada, Departamento de Fisica, Facultad de Ciencias, Universidad de Los Andes, Merida, 5101 (Venezuela, Bolivarian Republic of)

    2016-06-15

    A combined study of the X-ray powder diffraction, differential thermal analysis, optical absorption, and Raman spectroscopy of the high-temperature modification of Cu{sub 2}ZnGeTe{sub 4} quaternary semiconductor, obtained by fast quenching from 820 K to ice water temperature, has been done. It has been found that this phase crystallizes in a tetragonal kesterite-type structure. From the analysis of the absorption coefficient spectra, the band gap energy of this material at room temperature has been found to be 1.49 eV. An optical transition from defect acceptor states to the conduction band is also observed below the fundamental absorption edge. Three strongest Raman lines observed at 116, 119, and 139 cm{sup -1} have been assigned to the A-symmetry modes. Also, lines at 81, 89, 97, and 263 cm{sup -1} tentatively ascribed as B or E-symmetry modes have been detected from the spectrum. The presence in this high-temperature modification of ZnTe and Cu{sub 2}GeTe{sub 3} secondary phases has been detected by both XRD and Raman spectroscopy. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  5. Applicability of a portable CdTe and NaI (Tl) spectrometer for activity measure; Aplicabilidade de um espectrometro portatil de CdTe e NaI (Tl) para a medida da atividade de Cesio-137 ({sup 137}Cs) e Berilio-7 ({sup 7}Be)

    Energy Technology Data Exchange (ETDEWEB)

    Fernandes, Jaquiel Salvi

    2005-02-15

    In this work it was studied the application of an in situ gamma spectrometer (ROVER) of Amptek Inc., composed by a Cadmium Telluride detector (CdTe) of 3 mm x 3 mm x 1 mm and a 30 mm x 30 mm Sodium Iodide detector doped with Thallium [NaI (Tl)). The radioactive sources used were type pastille, sealed in aluminum and polyethylene, of {sup 241}Am, {sup 133}Ba, {sup 152}Eu, 3 sources of {sup 137}Cs and soil samples contaminated with {sup 137}Cs. It was performed a factorial planning 2{sup 3} to optimize the in situ spectrometry system. This way it was determined that the best temperature for CdTe crystal operation is -22, deg C, with Shaping Time of 3 {mu}S and Rise Time Discrimination (RTD) with value 3. With the help of the certified radioactive sources, we determined the efficiency curve of the two detectors. The CdTe detector was positioned at the standard distance of 1 meter of the sources and also at 4.15 cm. The NaI (Tl) detector was also positioned at the standard distance of 1 meter of the sources and at 2.8 cm. Measures were performed to determine the Minimum Detectable Activity (MDA) for both detectors. For the pastille type sources, the {sup 137}Cs MDA for the CdTe detector at 4.15 cm, analyzing the energy line of 32 keV, was 6 kBq and at 1 meter of the {sup 137}Cs source, analyzing the line of 661.65 keV, the MDA was 67 kBq. For soil samples, CdTe detector at 4.15 cm presented a MDA of 693 kBq.kg-l for the line of 32 keV, and for the soil sample {sup 7}Be content the MDA found was 2867 Bq.kg{sup -1} at 4.15 cm. For the NaI (Tl) detector, analyzing the line of 661.65 keV, the {sup 137}Cs MDA for pastille type source at 1 meter of distance was 7 kBq, and for soil sample at 2.8 cm the measured {sup 137}Cs MDA was 71 Bq.kg{sup -1}. For the soil sample {sup 7}Be content, at 2.8 cm of the Nal (Tl) detector, the obtained MDA was 91 Bq.kg{sup -1}. Due to the minimum detectable activities found for the two detectors, we concluded that the employed in situ gamma

  6. Love-mode surface acoustic wave devices based on multilayers of TeO2/ZnO(112¯0)/Si(100) with high sensitivity and temperature stability.

    Science.gov (United States)

    Luo, Jing-Ting; Quan, Ao-Jie; Liang, Guang-Xing; Zheng, Zhuang-Hao; Ramadan, Sami; Fu, Chen; Li, Hong-Lang; Fu, Yong-Qing

    2017-03-01

    A multilayer structure of TeO2/interdigital transducers (IDTs)/ZnO(112¯0)/Si(100) was proposed and investigated to achieve both high sensitivity and temperature-stability for bio-sensing applications. Dispersions of phase velocities, electromechanical coupling coefficients K(2), temperature coefficient of delay (TCD) and sensitivity in the multilayer structures were simulated as functions of normalized thicknesses of ZnO (hZnO/λ) and TeO2 (hTeO2/λ) films. The fundamental mode of Love mode (LM) - surface acoustic wave (SAW) shows a larger value of K(2) and higher sensitivity compared with those of the first mode. TeO2 film with a positive TCD not only compensates the temperature effect induced due to the negative TCD of ZnO(112¯0)/Si(100), but also enhances the sensitivity of the love mode device. The optimal normalized thickness ratios were identified to be hTeO2/λ=0.021 and hZnO/λ=0.304, and the devices with such structures can which generate a normalized sensitivity of -1.04×10(-3)m(3)/kg, a TCD of 0.009ppm/°C, and a K(2) value of 2.76%.

  7. Optimal configuration of a low-dose breast-specific gamma camera based on semiconductor CdZnTe pixelated detectors

    Science.gov (United States)

    Genocchi, B.; Pickford Scienti, O.; Darambara, DG

    2017-05-01

    Breast cancer is one of the most frequent tumours in women. During the ‘90s, the introduction of screening programmes allowed the detection of cancer before the palpable stage, reducing its mortality up to 50%. About 50% of the women aged between 30 and 50 years present dense breast parenchyma. This percentage decreases to 30% for women between 50 to 80 years. In these women, mammography has a sensitivity of around 30%, and small tumours are covered by the dense parenchyma and missed in the mammogram. Interestingly, breast-specific gamma-cameras based on semiconductor CdZnTe detectors have shown to be of great interest to early diagnosis. Infact, due to the high energy, spatial resolution, and high sensitivity of CdZnTe, molecular breast imaging has been shown to have a sensitivity of about 90% independently of the breast parenchyma. The aim of this work is to determine the optimal combination of the detector pixel size, hole shape, and collimator material in a low dose dual head breast specific gamma camera based on a CdZnTe pixelated detector at 140 keV, in order to achieve high count rate, and the best possible image spatial resolution. The optimal combination has been studied by modeling the system using the Monte Carlo code GATE. Six different pixel sizes from 0.85 mm to 1.6 mm, two hole shapes, hexagonal and square, and two different collimator materials, lead and tungsten were considered. It was demonstrated that the camera achieved higher count rates, and better signal-to-noise ratio when equipped with square hole, and large pixels (> 1.3 mm). In these configurations, the spatial resolution was worse than using small pixel sizes (< 1.3 mm), but remained under 3.6 mm in all cases.

  8. Microstructure and optical studies of electron beam evaporated ZnSe{sub 1-x}Te{sub x} nanocrystalline thin films

    Energy Technology Data Exchange (ETDEWEB)

    Emam-Ismail, M., E-mail: me_ismail_01@yahoo.com [Physics Department, Collage of Science, Qassim University, P.O. 6644, 51452 Buryadh (Saudi Arabia); Physics Department, Faculty of Science, Ain Shams University, 11566 Cairo (Egypt); El-Hagary, M. [Physics Department, Collage of Science, Qassim University, P.O. 6644, 51452 Buryadh (Saudi Arabia); Physics Department, Faculty of Science, Helwan University, Helwan, 11792 Cairo (Egypt); Shaaban, E.R. [Physics Department, Faculty of Science, Al-Azhar University, 71452 Assuit (Egypt); Al-Hedeib, A.M. [Physics Department, Collage of Science and Arts, Qassim University, Buryadh (Saudi Arabia)

    2012-08-15

    Highlights: Black-Right-Pointing-Pointer The structural and optical properties of ZnSeTe thin films were studied. Black-Right-Pointing-Pointer The micro structural parameters of the films have been determined. Black-Right-Pointing-Pointer The room temperature reflectance and transmittance data are analyzed. Black-Right-Pointing-Pointer The refractive index and energy gap are determined. Black-Right-Pointing-Pointer The single oscillator parameters were calculated. - Abstract: Nanocrystalline thin films of ZnSe{sub 1-x}Te{sub x} (0.0 {<=} x {<=} 1.0) were deposited on glass substrate using electron beam deposition technique. The structure of the prepared films was examined using X-ray diffraction technique and revealed that the deposited films have polycrystalline zinc blend structure with lattice constant, a, increasing linearly from 0.55816 to 0.59989 nm as x varies from 0 to 1. The optical studies of the nanocrystalline ZnSe{sub 1-x}Te{sub x} films showed that the refractive index increases and fundamental band gap E{sub g} decreases from 2.58 to 2.21 eV as the tellurium concentration increases from 0 to 1. Furthermore, it was also found that the variation of E{sub g} with composition shows quadratic behavior with bowing parameter equal to 0.105. In addition, the thickness and annealing effects on the structure and optical properties of the deposited films were also investigated. The refractive index dispersion and its dependence on composition were discussed in terms of single oscillator model proposed by Wemple-DiDomenico.

  9. Au{sup 9+} swift heavy ion irradiation of Zn[CS(NH{sub 2}){sub 2}]{sub 3}SO{sub 4} crystal: Crystalline perfection and optical properties

    Energy Technology Data Exchange (ETDEWEB)

    Kushwaha, S.K., E-mail: kushwaha@princeton.edu [CSIR – National Physical Laboratory, Dr. K.S. Krishnan Road, New Delhi 110012 (India); Department of Chemistry, Princeton University, Princeton, NJ 08544 (United States); Maurya, K.K.; Vijayan, N.; Gupta, A.K.; Haranath, D. [CSIR – National Physical Laboratory, Dr. K.S. Krishnan Road, New Delhi 110012 (India); Kumar, B. [Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India); Kanjilal, D. [Inter-University Accelerator Centre, New Delhi 110067 (India); Bhagavannarayana, G. [CSIR – National Physical Laboratory, Dr. K.S. Krishnan Road, New Delhi 110012 (India)

    2014-11-01

    Highlights: • Zn[CS(NH2){sub 2}]{sub 3}SO{sub 4}, a NLO crystal irradiated by Au{sup 9+} 150 MeV swift heavy ions. • Structural defects in pristine and irradiated crystals investigated and compared. • Functional groups and Raman lattice modes in crystal investigated. • Au{sup 9+} irradiation related PL emission, optical transparency and band gap studied. • Correlation of crystalline perfection with optical properties is discussed. - Abstract: The single crystal of tris(thiourea)zinc sulphate (Zn[CS(NH{sub 2}){sub 2}]{sub 3}SO{sub 4}) was irradiated by 150 MeV Au{sup 9+} swift heavy ions and analyzed in comparison with pure crystal for crystalline perfection and optical properties. The Fourier transform infrared and X-ray powder diffraction inferred that swift ions lead the disordering and breaking of molecular bonds in lattice without formation of new structural phases. High resolution X-ray diffraction (HRXRD) revealed the abundance of point defects, and formation of mosaics and low angle grain boundaries in the irradiated region of crystal. The swift ion irradiation found to affect the lattice vibrational modes and functional groups significantly. The defects induced by heavy ions act as the color centers and resulted in enhance of photoluminescence emission intensity. The optical transparency and band gap found to be decreased.

  10. Structural study of the semimagnetic semiconductor Zn{sub 0.5}Mn{sub 0.5}In{sub 2}Te{sub 4}

    Energy Technology Data Exchange (ETDEWEB)

    Delgado, G.E. [Laboratorio de Cristalografia, Departamento de Quimica, Facultad de Ciencias, Universidad de Los Andes, Merida (Venezuela); Sagredo, V. [Laboratorio de Magnetismo en Solidos, Departamento de Quimica, Facultad de Ciencias, Universidad de Los Andes, Merida (Venezuela)

    2009-02-15

    The semimagnetic semiconductor alloy Zn{sub 0.5}Mn{sub 0.5}In{sub 2}Te{sub 4} was refined from an X-ray powder diffraction pattern using the Rietveld method. This compound crystallizes in the space group I anti 42m (N {sup circle} 121), Z=2, with unit cell parameters a=6.1738(1)A, c=12.3572(4)A, V=471.00(2)A3, c/a=2.00. This material crystallizes in a stannite-type structure. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  11. FP-LAPW investigation of structural, electronic, linear and nonlinear optical properties of ZnIn2Te4 defect-chalcopyrite

    OpenAIRE

    AYEB, Y.; OUAHRANI, T.; Khenata, R.; Reshak, Ali H.; RACHED, D.; Bouhemadou, A.; ARRAR, R.

    2010-01-01

    A theoretical study of structural, electronic, linear and nonlinear optical properties of ZnIn2Te4 defect-chalcopyrite is presented using the full-potential linearized augmented plane-wave (FP-LAPW) method. The exchange and correlation potential is treated by the generalized-gradient approximation (GGA). Moreover, the Engel and Vosko GGA formalism (EV-GGA) is also used to improve the band gap results. The lattice parameters (a, c) and the atomic positions (x, y and z) are optimized and found ...

  12. Energy resolution and light yield non-proportionality of ZnSe Te scintillator studied by large area avalanche photodiodes and photomultipliers

    CERN Document Server

    Balcerzyk, M; Moszynski, M; Kapusta, M; Szawlowski, M

    2002-01-01

    The ZnSe : Te scintillator has been studied by means of a photomultiplier with an extended bialkali photocathode, a large area avalanche photodiode (LAAPD) and a PIN photodiode. The light output was determined to be 28 300+-1700 photons/MeV. Results indicate good proportionality for light output versus gamma-ray energy. Measurements of the 662 keV gamma-ray energy spectrum recorded using a LAAPD resulted in an energy resolution of 5.4+-0.3%. Based on these results, an intrinsic energy resolution of 3.3+-0.7% has been calculated.

  13. Caractérisation temporelle et spectrale de la photoluminescence de boîtes quantiques de CdZnTe

    Science.gov (United States)

    Brimont, C.; Cronenberger, S.; Crégut, O.; Gallart, M.; Hönerlage, B.; Gilliot, P.

    2006-10-01

    Nous étudions la relaxation des paires électron-trou dans des échantillons de boîtes quantiques auto-assemblées de CdZnTe riches en cadmium incluses dans un puits quantique riche en zinc. Dans ce type de système, le couplage électron-phonon LO est le principal mécanisme responsable de la relaxation d'énergie des porteurs. Nous mesurons cette relaxation par photoluminescence résolue en temps, en fonction de l'intensité et de l'énergie de photon de l'excitation.

  14. A comparative study of (ZnO, In{sub 2}O{sub 3}: SnO{sub 2}, SnO{sub 2})/CdS/CdTe/(Cu/)Ni heterojunctions

    Energy Technology Data Exchange (ETDEWEB)

    Vatavu, Sergiu, E-mail: svatavu@usm.md [Faculty of Physics and Engineering, Moldova State University, 60 A. Mateevici str., MD-2009 Chisinau, Republic of Moldova (Moldova, Republic of); Rotaru, Corneliu; Fedorov, Vladimir [Faculty of Physics and Engineering, Moldova State University, 60 A. Mateevici str., MD-2009 Chisinau, Republic of Moldova (Moldova, Republic of); Stein, Timo A. [Institut für Heterogene Materialsysteme, Helmholtz-Zentrum Berlin für Materialien und Energie, Lise-Meitner-Campus, Hahn-Meitner-Platz 1, 14109 Berlin (Germany); Caraman, Mihail; Evtodiev, Igor [Faculty of Physics and Engineering, Moldova State University, 60 A. Mateevici str., MD-2009 Chisinau, Republic of Moldova (Moldova, Republic of); Kelch, Carola; Kirsch, Michael [Institut für Heterogene Materialsysteme, Helmholtz-Zentrum Berlin für Materialien und Energie, Lise-Meitner-Campus, Hahn-Meitner-Platz 1, 14109 Berlin (Germany); Chetruş, Petru; Gaşin, Petru [Faculty of Physics and Engineering, Moldova State University, 60 A. Mateevici str., MD-2009 Chisinau, Republic of Moldova (Moldova, Republic of); Lux-Steiner, Martha Ch. [Institut für Heterogene Materialsysteme, Helmholtz-Zentrum Berlin für Materialien und Energie, Lise-Meitner-Campus, Hahn-Meitner-Platz 1, 14109 Berlin (Germany); Rusu, Marin [Faculty of Physics and Engineering, Moldova State University, 60 A. Mateevici str., MD-2009 Chisinau, Republic of Moldova (Moldova, Republic of); Institut für Heterogene Materialsysteme, Helmholtz-Zentrum Berlin für Materialien und Energie, Lise-Meitner-Campus, Hahn-Meitner-Platz 1, 14109 Berlin (Germany)

    2013-05-01

    The influence of the manufacturing technology on the structural properties of CdTe and CdS layers, components of the CdS/CdTe solar cells, has been investigated. CdTe based solar cells have been prepared using glass substrates coated with different transparent conductive oxides (TCOs: SnO{sub 2}, In{sub 2}O{sub 3}: SnO{sub 2} (ITO), ZnO:Al, ZnO:Al/i-ZnO). The analysis of the technology combined with various investigation methods allowed to determine optimum deposition parameters for CdS and CdTe for each type of TCO used. X-ray diffraction (XRD) and grazing incidence XRD analysis have been carried out for TCO, CdS, and CdTe layers at different deposition stages before and after annealing in the presence of CdCl{sub 2} in air. The reflection spectra in the 100–600 cm{sup −1} spectral region have been thoroughly studied by using Fourier transform infrared spectroscopy. It was found that (i) the best quality possess CdS and CdTe thin films sequentially deposited on ZnO:Al substrates and that (ii) the pre-treatment defects can be effectively cured and most of the secondary phases can be removed by annealing, while the basic structure of the investigated thin films does not essentially change. - Highlights: ► Deposition technology of CdS and CdTe thin films. ► Slightly improved CdS film quality obtained for deposition on ZnO:Al substrates. ► Improved quality of CdTe deposited on CdS layers grown at high substrate temperature. ► Defects and secondary phases removal as a result of thermal annealing.

  15. Preparation and optical properties of TeO2-BaO-ZnO-ZnF2 fluoro-tellurite glass for mid-infrared fiber Raman laser applications

    Science.gov (United States)

    Li, Jie; Xiao, Xusheng; Gu, Shaoxuan; Xu, Yantao; Zhou, Zhiguang; Guo, Haitao

    2017-04-01

    A serial of novel fluoro-tellurite glasses with compositions of 60TeO2-20BaO-(20-x)ZnO-xZnF2 (x = 0, 2, 4, 5 and 6 mol%) were prepared. The compositional dependences of glass structural evaluation, Raman gain coefficient, UV-Vis transmission spectrum, IR transmission spectrum, linear refractive index and third-order nonlinearity were analyzed. The results showed that the addition of 6 mol% ZnF2 can further improve the Raman gain coefficient to as well as 52 × 10-11 cm/W and effectively decrease around 73% and 57% absorption coefficients respectively caused by free Osbnd H groups (@3.3 μm) and hydrogen-bonded Osbnd H groups (@4.5 μm) in glass. Addition of ZnF2 does not change the UV-Vis absorption edge, optical band gap energy and infrared region cut-off edge almost, while the linear refraction index and ultrafast third-nonlinearity show unmonotonic changes. These novel fluoro-tellurite glasses may be suitable candidates for using in mid-infrared Raman fiber laser and/or amplifier.

  16. Performance of a CdZnTe Radiation Detector Grown by a Low-pressure Bridgman Method

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Han Soo; Ha, Jang Ho; Lee, Kyu Hong [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

    2011-11-15

    CdZnTe (CZT) has been studied for many years as a material for room-temperature, high energy resolution gamma-ray detectors. Currently, prototypical detectors are now available for medical imaging, industrial tomograph and astrophysics in the world-wide. For this reason and next-generation gamma-ray detector, core-technology of CZT crystal growth and detector fabrication is much more crucial. CZT crystal was grown by Low-pressure Bridgman Method at Korea Atomic Energy Research Institute (KAERI) for room-temperature gamma-ray detector. In this study, performance of a CZT radiation detector such as I-V curve and energy resolution for gamma-ray was presented. We measured the I-V curve to define the resistivity of the grown CZT crystal. The electrometer, Keithley 6517A, was used to biasthe high voltage on the detector and read the leakage current. The measured I-V curve is shown in Fig. 3. Resistivity of the planar-type CZT detector, which didn't apply any passivation, was 7.8 x 10{sup 9} Ω·cm. The pulse height spectra was obtained with a CREMAT® CR-110 preamplifier, ORTEC® 572 amplifier, and 919 MCA. Figure 4 and 5 shows the pulse height spectra for 511 keV and 660 keV gamma-ray. The 10.0 % and 9.7 % energy resolutions for 511 keV and 662 keV gamma-ray, respectively, were obtained with the fabricated CZT detector. CZT single crystal was grown by low-pressure Bridgman method. Large domain of (1,1,1) crystalline face was obtained. Resistivity of 7.8 x 10{sup 9} Ω·cm of the grown CZT crystal, can be fabricated gamma-ray detector from the results. 10.0 % and 9.7 % of enrgy resolution for 511 keV and 662 keV gamma-ray, respectively, was also obtained. In the future work, passivation and types of detector, such as a Schottky-type, a Frisch Collor, and a coplanar electrode, will be studied to improve energy resolution.

  17. Radiation dose reduction using a CdZnTe-based computed tomography system: Comparison to flat-panel detectors

    Energy Technology Data Exchange (ETDEWEB)

    Le, Huy Q.; Ducote, Justin L.; Molloi, Sabee [Department of Radiological Sciences, University of California, Irvine, California 92697 (United States)

    2010-03-15

    Purpose: Although x-ray projection mammography has been very effective in early detection of breast cancer, its utility is reduced in the detection of small lesions that are occult or in dense breasts. One drawback is that the inherent superposition of parenchymal structures makes visualization of small lesions difficult. Breast computed tomography using flat-panel detectors has been developed to address this limitation by producing three-dimensional data while at the same time providing more comfort to the patients by eliminating breast compression. Flat panels are charge integrating detectors and therefore lack energy resolution capability. Recent advances in solid state semiconductor x-ray detector materials and associated electronics allow the investigation of x-ray imaging systems that use a photon counting and energy discriminating detector, which is the subject of this article. Methods: A small field-of-view computed tomography (CT) system that uses CdZnTe (CZT) photon counting detector was compared to one that uses a flat-panel detector for different imaging tasks in breast imaging. The benefits afforded by the CZT detector in the energy weighting modes were investigated. Two types of energy weighting methods were studied: Projection based and image based. Simulation and phantom studies were performed with a 2.5 cm polymethyl methacrylate (PMMA) cylinder filled with iodine and calcium contrast objects. Simulation was also performed on a 10 cm breast specimen. Results: The contrast-to-noise ratio improvements as compared to flat-panel detectors were 1.30 and 1.28 (projection based) and 1.35 and 1.25 (image based) for iodine over PMMA and hydroxylapatite over PMMA, respectively. Corresponding simulation values were 1.81 and 1.48 (projection based) and 1.85 and 1.48 (image based). Dose reductions using the CZT detector were 52.05% and 49.45% for iodine and hydroxyapatite imaging, respectively. Image-based weighting was also found to have the least beam

  18. Development of new CdZnTe detectors for room-temperature high-flux radiation measurements.

    Science.gov (United States)

    Abbene, Leonardo; Gerardi, Gaetano; Raso, Giuseppe; Principato, Fabio; Zambelli, Nicola; Benassi, Giacomo; Bettelli, Manuele; Zappettini, Andrea

    2017-03-01

    Recently, CdZnTe (CZT) detectors have been widely proposed and developed for room-temperature X-ray spectroscopy even at high fluxes, and great efforts have been made on both the device and the crystal growth technologies. In this work, the performance of new travelling-heater-method (THM)-grown CZT detectors, recently developed at IMEM-CNR Parma, Italy, is presented. Thick planar detectors (3 mm thick) with gold electroless contacts were realised, with a planar cathode covering the detector surface (4.1 mm × 4.1 mm) and a central anode (2 mm × 2 mm) surrounded by a guard-ring electrode. The detectors, characterized by low leakage currents at room temperature (4.7 nA cm(-2) at 1000 V cm(-1)), allow good room-temperature operation even at high bias voltages (>7000 V cm(-1)). At low rates (200 counts s(-1)), the detectors exhibit an energy resolution around 4% FWHM at 59.5 keV ((241)Am source) up to 2200 V, by using commercial front-end electronics (A250F/NF charge-sensitive preamplifier, Amptek, USA; nominal equivalent noise charge of 100 electrons RMS). At high rates (1 Mcounts s(-1)), the detectors, coupled to a custom-designed digital pulse processing electronics developed at DiFC of University of Palermo (Italy), show low spectroscopic degradations: energy resolution values of 8% and 9.7% FWHM at 59.5 keV ((241)Am source) were measured, with throughputs of 0.4% and 60% at 1 Mcounts s(-1), respectively. An energy resolution of 7.7% FWHM at 122.1 keV ((57)Co source) with a throughput of 50% was obtained at 550 kcounts s(-1) (energy resolution of 3.2% at low rate). These activities are in the framework of an Italian research project on the development of energy-resolved photon-counting systems for high-flux energy-resolved X-ray imaging.

  19. Influence of CdCl{sub 2} activation treatment on ultra-thin Cd{sub 1−x}Zn{sub x}S/CdTe solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Clayton, A.J., E-mail: a.clayton@glyndwr.ac.uk [Centre for Solar Energy Research, Glyndŵr University, OpTIC, St. Asaph LL17 0JD (United Kingdom); Baker, M.A.; Babar, S. [Faculty of Engineering & Physical Sciences, University of Surrey, Guildford GU2 7XH (United Kingdom); Gibson, P.N. [Institute for Health & Consumer Protection, Joint Research Centre, 21020 Ispra, VA (Italy); Irvine, S.J.C.; Kartopu, G.; Lamb, D.A.; Barrioz, V. [Centre for Solar Energy Research, Glyndŵr University, OpTIC, St. Asaph LL17 0JD (United Kingdom)

    2015-09-01

    Ultra-thin CdTe photovoltaic solar cells with an absorber thickness of 0.5 μm were produced by metal organic chemical vapour deposition onto indium tin oxide coated boroaluminosilicate glass. A wide band gap Cd{sub 1−x}Zn{sub x}S alloy window layer was employed to improve spectral response in the blue region of the solar spectrum. X-ray photoelectron spectroscopy, X-ray diffraction and scanning electron microscopy were used to monitor changes in the chemical composition and microstructure of the Cd{sub 1−x}Zn{sub x}S/CdTe solar cell after varying the post-deposition CdCl{sub 2} activation treatment time and annealing temperature. The CdCl{sub 2} treatment leached Zn from the Cd{sub 1−x}Zn{sub x}S layer causing a redshift in the spectral response onset of window absorption. S diffusion occurred across the Cd{sub 1−x}Zn{sub x}S/CdTe interface, which was more pronounced as the CdCl{sub 2} treatment was increased. A CdTe{sub 1−y}S{sub y} alloy was formed at the interface, which thickened with CdCl{sub 2} treatment time. Small concentrations of S (up to 2 at.%) were observed throughout the CdTe layer as the degree of CdCl{sub 2} treatment was increased. Greater S diffusion across the Cd{sub 1−x}Zn{sub x}S/CdTe interface caused the device open-circuit voltage (V{sub oc}) to increase. The higher V{sub oc} is attributed to enhanced strain relaxation and associated reduction of defects in the interface region as well as the increase in CdTe grain size. - Highlights: • Increased CdCl{sub 2} activation treatment resulted in loss of Zn from Cd{sub 1−x}Zn{sub x}S. • Sulphur diffusion into CdTe was enhanced with greater CdCl{sub 2} activation treatment. • Improvement to V{sub oc} correlated with increased sulphur diffusion into CdTe.

  20. The Summarization of Passivation Techniques on CdTe and CdZnTe Room-tempreture Detectors%CdTe和CdZnTe室温探测器钝化方法概述

    Institute of Scientific and Technical Information of China (English)

    赵晓燕; 鲁正雄

    2005-01-01

    CdTe和CdZnTe是X射线和γ射线探测器最理想的材料.钝化可以降低CdTe和CdZnTe的表面漏电流,提高其能量分辨率.本文综述了CdTe和CdZnTe的H2O2湿法钝化方法和热氧化、氧离子钝化、氧离子/SiNx钝化等干法钝化方法.

  1. Study of the aqueous synthesis, optical and electrochemical characterization of alloyed Zn{sub x}Cd{sub 1-x}Te nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Matos, Charlene Regina Santos [Postgraduate Program in Materials Science and Engineering, Federal University of Sergipe, São Cristóvão, SE (Brazil); Candido, Luan P.M.; Souza, Helio Oliveira [Department of Chemistry, Federal University of Sergipe, São Cristóvão, SE (Brazil); Pereira da Costa, Luiz [Institute of Technology and Research (ITP), Tiradentes University, Aracaju, SE (Brazil); Sussuchi, Eliana Midori [Department of Chemistry, Federal University of Sergipe, São Cristóvão, SE (Brazil); Gimenez, Iara F., E-mail: gimenez@ufs.br [Postgraduate Program in Materials Science and Engineering, Federal University of Sergipe, São Cristóvão, SE (Brazil); Department of Chemistry, Federal University of Sergipe, São Cristóvão, SE (Brazil); Postgraduate Program in Chemistry, Federal University of Sergipe, São Cristóvão, SE (Brazil)

    2016-08-01

    The effects of experimental factors such as initial reaction pH, capping ligand, and heating method on the optical and electrochemical properties of aqueous alloyed Zn{sub x}Cd{sub 1-x}Te nanocrystals were evaluated. Here the type of capping ligand (glutathione GSH and 3-mercaptopropionic acid MPA) was found to be the most significant factor in controlling the range of photoluminescence emission. Also a pronounced pH effect on the emission wavelength has been verified in the presence of GSH, in contrast to MPA for which only a minor pH effect was observed. The heating method (microwave or hydrothermal) was found to be irrelevant for the emission wavelength at the conditions studied. The electrochemical characterization in aqueous medium (cyclic voltammetry and differential pulse voltammetry) evidenced a good correlation between electrochemical and optical band gap values and allowed estimation of band edge positions. - Highlights: • ZnCdTe quantum dots were obtained by aqueous synthesis. • Nature of capping ligand was the most relevant factor. • Optical and electrochemical band gaps were well correlated.

  2. Correlated analysis of 2 MeV proton-induced radiation damage in CdZnTe crystals using photoluminescence and thermally stimulated current techniques

    Science.gov (United States)

    Gu, Yaxu; Jie, Wanqi; Rong, Caicai; Wang, Yuhan; Xu, Lingyan; Xu, Yadong; Lv, Haoyan; Shen, Hao; Du, Guanghua; Fu, Xu; Guo, Na; Zha, Gangqiang; Wang, Tao

    2016-11-01

    Radiation damage induced by 2 MeV protons in CdZnTe crystals has been studied by means of photoluminescence (PL) and thermally stimulated current (TSC) techniques. A notable quenching of PL intensity is observed in the regions irradiated with a fluence of 6 × 1013 p/cm2, suggesting the increase of non-radiative recombination centers. Moreover, the intensity of emission peak Dcomplex centered at 1.48 eV dominates in the PL spectrum obtained from irradiated regions, ascribed to the increase of interstitial dislocation loops and A centers. The intensity of TSC spectra in irradiated regions decreases compared to the virgin regions, resulting from the charge collection inefficiency caused by proton-induced recombination centers. By comparing the intensity of identified traps obtained from numerical fitting using simultaneous multiple peak analysis (SIMPA) method, it suggests that proton irradiation under such dose can introduce high density of dislocation and A-centers in CdZnTe crystals, consistent with PL results.

  3. Frequency upconversion properties of Tm{sup 3+} doped TeO{sub 2}-ZnO glasses containing silver nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Assumpcao, Thiago A.A. de [Departamento de Engenharia de Sistemas Eletronicos, Escola Politecnica da USP, 05508-900 Sao Paulo, SP (Brazil); Silva, Davinson M. da, E-mail: davinsonm@gmail.com [Departamento de Engenharia de Sistemas Eletronicos, Escola Politecnica da USP, 05508-900 Sao Paulo, SP (Brazil); Camilo, Mauricio E.; Kassab, Luciana R.P. [Laboratorio de Tecnologia em Materiais Fotonicos e Optoeletronicos, Faculdade de Tecnologia de Sao Paulo, (CEETEPS/UNESP), 01124-060 Sao Paulo, SP (Brazil); Gomes, Anderson S.L.; Araujo, Cid B. de [Departamento de Fisica, Universidade Federal de Pernambuco, 50670-901 Recife, PE (Brazil); Wetter, Niklaus U. [Centro de Lasers e Aplicacoes, Instituto de Pesquisas Energeticas e Nucleares (IPEN - SP), 05508-000 Sao Paulo, SP (Brazil)

    2012-09-25

    Highlights: Black-Right-Pointing-Pointer Luminescence of Tm{sup 3+} doped TeO{sub 2}-ZnO glasses with Ag nanoparticles were investigated. Black-Right-Pointing-Pointer Upconversion processes associated to the Tm{sup 3+} were studied under a 1050 nm laser pump. Black-Right-Pointing-Pointer Photo luminescence enhancement by one-order of magnitude was observed. Black-Right-Pointing-Pointer Enhancement of the UC signals is attributed to local field enhancement nearby NPs. - Abstract: Frequency upconversion (UC) properties of Tm{sup 3+} doped TeO{sub 2}-ZnO glasses containing silver nanoparticles (NPs) were investigated. Infrared-to-visible and infrared-to-infrared UC processes associated to the Tm{sup 3+} ions were studied by exciting the samples with a cw 1050 nm ytterbium laser. The luminescence intensity as a function of laser intensity was also measured using a pulsed 1047 nm Nd{sup 3+}:YVO laser in order to determine the number of photons participating in the UC processes. Enhancement of the UC signals for samples heat-treated during various time intervals is attributed to the growth of the local field in the vicinity of the NPs. PL enhancement by one-order of magnitude was observed in the whole spectrum of the samples heat-treated during 48 h. On the other hand PL quenching was observed for the samples heat-treated more than 48 h.

  4. Unbiased Sunlight-Driven Artificial Photosynthesis of Carbon Monoxide from CO2 Using a ZnTe-Based Photocathode and a Perovskite Solar Cell in Tandem.

    Science.gov (United States)

    Jang, Youn Jeong; Jeong, Inyoung; Lee, Jaehyuk; Lee, Jinwoo; Ko, Min Jae; Lee, Jae Sung

    2016-07-26

    Solar fuel production, mimicking natural photosynthesis of converting CO2 into useful fuels and storing solar energy as chemical energy, has received great attention in recent years. Practical large-scale fuel production needs a unique device capable of CO2 reduction using only solar energy and water as an electron source. Here we report such a system composed of a gold-decorated triple-layered ZnO@ZnTe@CdTe core-shell nanorod array photocathode and a CH3NH3PbI3 perovskite solar cell in tandem. The assembly allows effective light harvesting of higher energy photons (>2.14 eV) from the front-side photocathode and lower energy photons (>1.5 eV) from the back-side-positioned perovskite solar cell in a single-photon excitation. This system represents an example of a photocathode-photovoltaic tandem device operating under sunlight without external bias for selective CO2 conversion. It exhibited a steady solar-to-CO conversion efficiency over 0.35% and a solar-to-fuel conversion efficiency exceeding 0.43% including H2 as a minor product.

  5. Defect Measurements of CdZnTe Detectors Using I-DLTS, TCT, I-V and Gamma-ray Spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Gul,R.

    2008-08-11

    In this work we measured the crystal defect levels and tested the performance of CdZnTe detectors by diverse methodologies, viz., Current Deep Level Transient Spectroscopy (I-DLTS), Transient Current Technique (TCT), Current and Capacitance versus Voltage measurements (I-V and C-V), and gamma-ray spectroscopy. Two important characteristics of I-DLTS technique for advancing this research are (1) it is applicable for high-resistivity materials (>10{sup 6} {Omega}-cm), and, (2) the minimum temperature for measurements can be as low as 10 K. Such low-temperature capability is excellent for obtaining measurements at shallow levels. We acquired CdZnTe crystals grown by different techniques from two different vendors and characterized them for point defects and their response to photons. I-DLTS studies encompassed measuring the parameters of the defects, such as the energy levels in the band gap, the carrier capture cross-sections and their densities. The current induced by the laser-generated carriers and the charge collected (or number of electrons collected) were obtained using TCT that also provides the transport properties, such as the carrier life time and mobility of the detectors under study. The detector's electrical characteristics were explored, and its performance tested using I-V, C-V and gamma-ray spectroscopy.

  6. Defect measurements of CdZnTe detectors using I-DLTS, TCT, I-V, C-V and γ-ray spectroscopy

    Science.gov (United States)

    Gul, R.; Li, Z.; Rodriguez, R.; Keeter, K.; Bolotnikov, A.; James, R.

    2008-08-01

    In this work we measured the crystal defect levels and tested the performance of CdZnTe detectors by diverse methodologies, viz., Current Deep Level Transient Spectroscopy (I-DLTS), Transient Current Technique (TCT), Current and Capacitance versus Voltage measurements (I-V and C-V), and gamma-ray spectroscopy. Two important characteristics of I-DLTS technique for advancing this research are (1) it is applicable for high-resistivity materials (>106 Ω-cm), and, (2) the minimum temperature for measurements can be as low as 10 K. Such low-temperature capability is excellent for obtaining measurements at shallow levels. We acquired CdZnTe crystals grown by different techniques from two different vendors and characterized them for point defects and their response to photons. I-DLTS studies encompassed measuring the parameters of the defects, such as the energy levels in the band gap, the carrier capture cross-sections and their densities. The current induced by the laser-generated carriers and the charge collected (or number of electrons collected) were obtained using TCT that also provides the transport properties, such as the carrier life time and mobility of the detectors under study. The detector's electrical characteristics were explored, and its performance tested using I-V, C-V and gamma-ray spectroscopy.

  7. Effect of the cadmium chloride treatment on RF sputtered Cd{sub 0.6}Zn{sub 0.4}Te films for application in multijunction solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Shimpi, Tushar M., E-mail: mechanical.tushar@gmail.com; Kephart, Jason M.; Swanson, Drew E.; Munshi, Amit H.; Sampath, Walajabad S. [Department of Mechanical Engineering, Colorado State University, 1320 Campus Delivery, Fort Collins, Colorado 80523 (United States); Abbas, A.; Walls, John M. [CREST (Centre for Renewable Energy Systems and Technology), Loughborough University, Loughborough LE11 3TU (United Kingdom)

    2016-09-15

    Single phase Cd{sub 0.6}Zn{sub 0.4}Te (CdZnTe) films of 1 μm thickness were deposited by radio frequency planar magnetron sputter deposition on commercial soda lime glass samples coated with fluorine-doped tin oxide and cadmium sulphide (CdS). The stack was then treated with cadmium chloride (CdCl{sub 2}) at different temperatures using a constant treatment time. The effect of the CdCl{sub 2} treatment was studied using optical, materials, and electrical characterization of the samples and compared with the as-deposited CdZnTe film with the same stack configuration. The band gap deduced from Tauc plots on the as-deposited CdZnTe thin film was 1.72 eV. The deposited film had good crystalline quality with a preferred orientation along the {111} plane. After the CdCl{sub 2} treatment, the absorption edge shifted toward longer wavelength region and new peaks corresponding to cadmium telluride (CdTe) emerged in the x-ray diffraction pattern. This suggested loss of zinc after the CdCl{sub 2} treatment. The cross sectional transmission electron microscope images of the sample treated at 400 °C and the energy dispersive elemental maps revealed the absence of chlorine along the grain boundaries of CdZnTe and residual CdTe. The presence of chlorine in the CdTe devices plays a vital role in drastically improving the device performance which was not observed in CdZnTe samples treated with CdCl{sub 2}. The loss of zinc from the surface and incomplete recrystallization of the grains together with the presence of high densities of stacking faults were observed. The surface images using scanning electron microscopy showed that the morphology of the grains changed from small spherical shape to large grains formed due to the fusion of small grains with distinct grain boundaries visible at the higher CdCl{sub 2} treatment temperatures. The absence of chlorine along the grain boundaries, incomplete recrystallization and distinct grain boundaries is understood to cause the poor

  8. Use of high-granularity CdZnTe pixelated detectors to correct response non-uniformities caused by defects in crystals

    Energy Technology Data Exchange (ETDEWEB)

    Bolotnikov, A.E., E-mail: bolotnik@bnl.gov [Brookhaven National Laboratory, Upton, NY 11793 (United States); Camarda, G.S.; Cui, Y.; De Geronimo, G. [Brookhaven National Laboratory, Upton, NY 11793 (United States); Eger, J.; Emerick, A. [eV Products Inc., Saxonburg, PA 16056 (United States); Fried, J.; Hossain, A.; Roy, U.; Salwen, C. [Brookhaven National Laboratory, Upton, NY 11793 (United States); Soldner, S. [eV Products Inc., Saxonburg, PA 16056 (United States); Vernon, E.; Yang, G.; James, R.B. [Brookhaven National Laboratory, Upton, NY 11793 (United States)

    2016-01-01

    Following our successful demonstration of the position-sensitive virtual Frisch-grid detectors, we investigated the feasibility of using high-granularity position sensing to correct response non-uniformities caused by the crystal defects in CdZnTe (CZT) pixelated detectors. The development of high-granularity detectors able to correct response non-uniformities on a scale comparable to the size of electron clouds opens the opportunity of using unselected off-the-shelf CZT material, whilst still assuring high spectral resolution for the majority of the detectors fabricated from an ingot. Here, we present the results from testing 3D position-sensitive 15×15×10 mm{sup 3} pixelated detectors, fabricated with conventional pixel patterns with progressively smaller pixel sizes: 1.4, 0.8, and 0.5 mm. We employed the readout system based on the H3D front-end multi-channel ASIC developed by BNL's Instrumentation Division in collaboration with the University of Michigan. We use the sharing of electron clouds among several adjacent pixels to measure locations of interaction points with sub-pixel resolution. By using the detectors with small-pixel sizes and a high probability of the charge-sharing events, we were able to improve their spectral resolutions in comparison to the baseline levels, measured for the 1.4-mm pixel size detectors with small fractions of charge-sharing events. These results demonstrate that further enhancement of the performance of CZT pixelated detectors and reduction of costs are possible by using high spatial-resolution position information of interaction points to correct the small-scale response non-uniformities caused by crystal defects present in most devices. - Highlights: • We investigated performances of 3D position sensitive CdZnTe pixelated detectors. • We employed the readout electronics based on H3D ASIC and data processing. • We demonstrated the feasibility of correcting response nonuniformities in CdZnTe pixelated detectors.

  9. Twinned CsLn{sub 2}F{sub 7} compounds (Ln=Nd, Gd, Tb, Er, Yb). The role of a highly symmetrical cation lattice with an arrangement analogous to the Laves phase MgZn{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Friese, Karen [Forschungszentrum Juelich GmbH, Juelich (Germany). Juelich Centre for Neutron Science-2; Khaidukov, Nicholas [Kurnakov Institute of General and Inorganic Chemistry, Moscow (Russian Federation); Grzechnik, Andrzej [RWTH Aachen Univ. (Germany). Inst. for Crystallography

    2016-07-01

    The occurrence of twinning can often be related to higher symmetrical structures. Fluorides are frequently twinned due to their close relation to high symmetry structures like fluoride, tysonite or pyrochlores. The series of compounds CsLn{sub 2}F{sub 7} is no exception. We refined the structures of the twinned compounds with Ln=Nd, Gd, Tb, Er, Yb in space group P112{sub 1}/b. An analysis of the pseudosymmetry of the resulting structures shows a highly symmetrical cation partial structure with a cation distribution similar to the one in the hexagonal Laves phase MgZn{sub 2}. Several other compounds ALn{sub 2}F{sub 7}, which have been described in the literature, show a similar cation array. The diversity of different space groups which have been reported for ALn{sub 2}F{sub 7} compounds can be better understood using group-subgroup relationships assuming the hypothetical structure of the cation array with space group P6{sub 3}/mmc as aristotype. Furthermore, the twinning is easily understood on the basis of the lost symmetry operations in the symmetry reduction from point group 6/mmm, e.g. to 2/m in the case of the CsLn{sub 2}F{sub 7} compounds.

  10. Fabrication and cyto-compatibility of Fe3O4/SiO2/graphene-CdTe QDs/CS nanocomposites for drug delivery.

    Science.gov (United States)

    Ou, Jun; Wang, Fang; Huang, Yuanjie; Li, Duosheng; Jiang, Yuming; Qin, Qing-Hua; Stachurski, Z H; Tricoli, Antonio; Zhang, Tina

    2014-05-01

    Synthesis of magnetic Fe3O4/SiO2/graphene-CdTe QDs/chitosan nanocomposites (FGQCs) is investigated with respect to their potential of improving the drug loading content above that of magnetic/fluorescent bifunctional nanocomposites. To evaluate the performance of the FGQCs, their surface morphology was thoroughly assessed. The in vitro interaction between the FGQCs and heptoma cell line smmc-7721 cells was observed for the first time by TEM ultrathin section imaging. At an excitation wavelength of 365 nm, the graphene-QDs exhibit a strong luminescence in aqueous environments. The loading content and entrapment efficiency of the FGQCs were 70% and 50%, respectively. The cytotoxicity of this novel drug delivery system was evaluated in vitro using heptoma cell line smmc-7721 and quantified by the 3-(4,5-dimethylthiazol-z-yl)-2,5-diphenyltetrazolium bromide (MTT) assay. The results show that FGQCs are a promising new multifunctional material for drug delivery in biological and medical applications.

  11. 高荧光CdSe/ZnTe Ⅱ型核壳量子点的水相合成与表征%Aqueous synthesis and characterization of highly fluorescent type-Ⅱ core/shell CdSe/ZnTe quantum dots

    Institute of Scientific and Technical Information of China (English)

    孙启壮; 付沙沙; 董美婷; 刘淑贤; 黄朝表

    2012-01-01

    It was synthesised a type II core-shell semiconductor quantum dots ( QDs) with high fluorescence quantum efficiency and chemical stability in aqueous solution. In which MPA was used as stabilizing agent and the prepared CdSe was used as core material. The fluorescence spectrum, UV-vis absorption spectra and X-ray diffraction (XRD) were performed to investigate the optical properties and the structure of QDs. The results showed that the fluorescence emission spectrum of type II CdSe/ZnTe tuned continuously from 500 nm to 570 nm, its half peak width was 40 ~50 nm and the fluorescence quantum yield was as high as 6. 8%. Furthermore , the particles were spherical, particle size was about 3.2 nm, particle size distribution was uniform, and the crystal structure was cubic.%以巯基丙酸(MPA)为稳定剂,CdSe量子点为核,在水相中合成了具有较高荧光量子效率和化学稳定性的Ⅱ型核壳半导体量子点.通过荧光光谱、紫外-可见光吸收光谱和X-射线衍射方法对该CdSe/ZnTe Ⅱ型核壳量子点的光谱性质和结构进行了表征,证明:CdSe/ZnTe Ⅱ型核壳量子点的荧光发射光谱在500~573nm连续可调,半峰宽为40~ 50 nm,荧光量子产率高达6.8%;粒型为球形,粒径约3.2nm,且粒径分布均匀;晶体结构为立方晶型.

  12. Macromolecular Systems with MSA-Capped CdTe and CdTe/ZnS Core/Shell Quantum Dots as Superselective and Ultrasensitive Optical Sensors for Picric Acid Explosive.

    Science.gov (United States)

    Dutta, Priyanka; Saikia, Dilip; Adhikary, Nirab Chandra; Sarma, Neelotpal Sen

    2015-11-11

    This work reports the development of highly fluorescent materials for the selective and efficient detection of picric acid explosive in the nanomolar range by fluorescence quenching phenomenon. Poly(vinyl alcohol) grafted polyaniline (PPA) and its nanocomposites with 2-mercaptosuccinic acid (MSA)-capped CdTe quantum dots (PPA-Q) and with MSA-capped CdTe/ZnS core/shell quantum dots (PPA-CSQ) are synthesized in a single step free radical polymerization reaction. The thermal stability and photo stability of the polymer increases in the order of PPA < PPA-Q < PPA-CSQ. The polymers show remarkably high selectivity and efficient sensitivity toward picric acid, and the quenching efficiency for PPA-CSQ reaches up to 99%. The detection limits of PPA, PPA-Q, and PPA-CSQ for picric acid are found to be 23, 1.6, and 0.65 nM, respectively, which are remarkably low. The mechanism operating in the quenching phenomenon is proposed to be a combination of a strong inner filter effect and ground state electrostatic interaction between the polymers and picric acid. A portable and cost-effective electronic device for the visual detection of picric acid by the sensory system is successfully fabricated. The device is further employed for quantitative detection of picric acid in real water samples.

  13. Energy spectrum of an exciton in a CdSe/ZnTe type-II core/shell spherical quantum dot

    Science.gov (United States)

    Chafai, A.; Dujardin, F.; Essaoudi, I.; Ainane, A.

    2017-01-01

    The binding energy of an exciton inside a CdSe/ZnTe core/shell spherical quantum dot was theoretically examined taking into account the dependence of the dielectric constant and charge carriers effective mass on radius, and using the envelope function approximation. Such a structure presents original optical and electronic properties because of the spatial separation of electrons and holes caused by the type-II alignment of energy states. The mean distance between the electron and hole was calculated variationally using a trial function taking into account the coulomb interaction between charge carriers. Our numerical results provide a description to the size dependence of the binding energy of an exciton inside a core/shell nanoheterostructure type-II. Indeed, by controlling the inner and outer radii, we can precisely control the energy spectrum of the exciton.

  14. Material-specific imaging system using energy-dispersive X-ray diffraction and spatially resolved CdZnTe detectors with potential application in breast imaging

    Science.gov (United States)

    Barbes, Damien; Tabary, Joachim; Paulus, Caroline; Hazemann, Jean-Louis; Verger, Loïck

    2017-03-01

    This paper presents a coherent X-ray-scattering imaging technique using a multipixel energy-dispersive system. Without any translation, the technique produces specific 1D image from data recorded by a single CdZnTe detector pixel using subpixelation techniques. The method is described in detail, illustrated by a simulation and then experimentally validated. As the main considered application of our study is breast imaging, this validation involves 2D imaging of a phantom made of plastics mimicking breast tissues. The results obtained show that our system can specifically image the phantom using a single detector pixel. For the moment, in vivo breast imaging applications remain difficult, as the dose delivered by the system is too high, but some adjustments are considered for further work.

  15. Observation of Superfluorescence from a Spontaneous Coherence of Excitons in ZnTe Crystal: Evidence for Bose-Einstein Condensation of Excitons?

    CERN Document Server

    Dai, D C

    2011-01-01

    Superfluorescence (SF) is the emission from a dense coherent system in population inversion, formed from an initially incoherent ensemble. This is characterised by an induction time (t_D) for the spontaneous development of the macroscopic quantum coherence. Here we report detailed observation of SF on ultrafast timescale from a quantum ensemble of coherent excitons in highly excited intrinsic bulk ZnTe single crystal at 5 K, showing a characteristic t_D from 40 ps to 10 ps, quantum noise and fluctuations, and quantum beating and ringing. From this clear observation of SF from a spontaneous coherence of excitons we infer that this is indicative of the formation of BEC of excitons on an ultrafast timescale.

  16. Preliminary test results of a new high-energy-resolution silicon and CdZnTe pixel detectors for application to x-ray astronomy

    Science.gov (United States)

    Sushkov, V. V.; Hamilton, William J.; Hurley, Kevin; Maeding, Dale G.; Ogelman, Hakki; Paulos, Robert J.; Puetter, Richard C.; Tumer, Tumay O.; Zweerink, Jeffrey

    1999-10-01

    New, high spatial resolution CdZnTe (CZT) and silicon (Si) pixel detectors are highly suitable for x-ray astronomy. These detectors are planned for use in wide field of view, imaging x-ray, and low energy gamma-ray all-sky monitor (AXGAM) in a future space mission. The high stopping power of CZT detectors combined with low-noise front-end readout makes possible an order of magnitude improvement in spatial and energy resolution in x-ray detection. The AXGAM instrument will be built in the form of a fine coded aperture placed over two-dimensional, high spatial resolution and low energy threshold CZT pixel detector array. The preliminary result of CZT and silicon pixel detector test with low-noise readout electronics system are presented. These detectors may also be used with or without modification for medical and industrial imaging.

  17. Studies of crystalline CdZnTe radiation detectors and polycrystalline thin film CdTe for X-ray imaging applications

    CERN Document Server

    Ede, A

    2001-01-01

    The development of a replacement to the conventional film based X-ray imaging technique is required for many reasons. One possible route for this is the use of a large area film of a suitable semiconductor overlaid on an amorphous silicon readout array. A suitable semiconductor exists in cadmium telluride and its tertiary alloy cadmium zinc telluride. In this thesis the spectroscopic characteristics of commercially available CZT X- and gamma-radiation detectors are established. The electronic, optical, electro-optic, structural and compositional properties of these detectors are then investigated. The attained data is used to infer a greater understanding for the carrier transport in a CZT radiation detector following the interaction of a high energy photon. Following this a method used to fabricate large area films of CdTe on a commercial scale is described. This is cathodic electrodeposition from an aqueous electrolyte. The theory and experimental arrangement for this technique are described in detail with ...

  18. CdZnTe个人剂量计能响特性的Monte Carlo模拟%Monte Carlo simulations of the energy response of γ-ray dosimeters with CdZnTe semiconductor detectors

    Institute of Scientific and Technical Information of China (English)

    康玺; 李君利; 曾志; 武祯

    2007-01-01

    为了获得合适的CdZnTe(CZT)个人剂量计的剂量-能量响应补偿方案,利用Monte Carlo程序MCNP4C对CZT、CZT加各种补偿物质和CZT在不同电子学下阀的剂量-能量响应特性进行了模拟计算.通过模拟得到了2种CZT个人剂量计剂量补偿方案:在CZT(5mm×5 mm×5mm)前加15 mm Pb(带有阶梯孔)和2 mm Pb(带有孔面积为Pb截面面积3%的孔,并分高、低能两能量道计数).为今后的CZT个人剂量计设计提供了理论依据.

  19. Linearity enhancement design of a 16-channel low-noise front-end readout ASIC for CdZnTe detectors

    Science.gov (United States)

    Zeng, Huiming; Wei, Tingcun; Wang, Jia

    2017-03-01

    A 16-channel front-end readout application-specific integrated circuit (ASIC) with linearity enhancement design for cadmium zinc telluride (CdZnTe) detectors is presented in this paper. The resistors in the slow shaper are realized using a high-Z circuit to obtain constant resistance value instead of using only a metal-oxide-semiconductor (MOS) transistor, thus the shaping time of the slow shaper can be kept constant for different amounts of input energies. As a result, the linearity of conversion gain is improved significantly. The ASIC was designed and fabricated in a 0.35 μm CMOS process with a die size of 2.60 mm×3.53 mm. The tested results show that a typical channel provides an equivalent noise charge (ENC) of 109.7e-+16.3e-/pF with a power consumption of 4 mW and achieves a conversion gain of 87 mV/fC with a nonlinearity of <0.4%. The linearity of conversion gain is improved by at least 86.6% as compared with the traditional approaches using the same front-end readout architecture and manufacture process. Moreover, the inconsistency among channels is <0.3%. An energy resolution of 2.975 keV (FWHM) for gamma rays of 59.5 keV was measured by connecting the ASIC to a 5 mm×5 mm ×2 mm CdZnTe detector at room temperature. The front-end readout ASIC presented in this paper achieves an outstanding linearity performance without compromising the noise, power consumption, and chip size performances.

  20. Optimized Optical Rectification and Electro-optic Sampling in ZnTe Crystals with Chirped Femtosecond Laser Pulses

    DEFF Research Database (Denmark)

    Erschens, Dines Nøddegaard; Turchinovich, Dmitry; Jepsen, Peter Uhd

    2011-01-01

    We report on optimization of the intensity of THz signals generated and detected by optical rectification and electro-optic sampling in dispersive, nonlinear media. Addition of a negative prechirp to the femtosecond laser pulses used in the THz generation and detection processes in 1-mm thick ZnT...

  1. Emission Properties of Yb3+/Er3+ Doped TeO2-WO3-ZnO Glasses for Broadband Optical Amplifiers

    Institute of Scientific and Technical Information of China (English)

    Jiacheng LI; Shunguang LI; Hefang HU; Fuxi GAN

    2004-01-01

    The YbS+/Er3+ doped TeO2-WO3-ZnO glasses were prepared. The absorption spectra, emission spectra and fluorescence lifetime of Era+ at 1.5μm, excited by 970 nm were measured. The influence of Er2Oa, Yb2Oa and Ohcontents on emission properties of Era+ at 1.5 μm was investigated. The optimum doping concentrations for Era+and Yba+ is around 3.34× 1020 ions/cma and 6.63×1020 ions/cma, respectively. The peak emission cross section is 0.83~0.87 pm2. With the increasing concentration of Yba+, the FWHM of Era+ emission at 1.5 μm in the glass increases from 77 nm to 83 nm. The results show that Yba+/Era+ doped meO2-Woa-ZnO glasses are promising candidate for Era+-doped broadband optical amplifier.

  2. First principles study on the structural, electronic and optical properties of diluted magnetic semiconductors Zn1-xCoxX (X=S, Se, Te)

    Institute of Scientific and Technical Information of China (English)

    Ouyang Chu-Ying; Xiong Zhi-Hua; Uuyang Qi-Zhen; Liu Guo-Dong; Ye Zhi-Qing; Lei Min-Sheng

    2006-01-01

    The electronic and optical properties of zincblende ZnX(X=S, Se, Te) and ZnX:Co are studied from density functional theory (DFT) based first principles calculations. The local crystal structure changes around the Co atoms in the lattice are studied after Co atoms are doped. It is shown that the Co-doped materials have smaller lattice constant (about 0.6%-0.9%). This is mainly due to the shortened Co-X bond length. The (partial) density of states (DOS) is calculated and differences between the pure and doped materials are studied. Results show that for the Co-doped materials, the valence bands are moving upward due to the existence of Co 3d electron states while the conductance bands are moving downward due to the reduced lattice constants. This results in the narrowed band gap of the doped materials. The complex dielectric indices and the absorption coefficients are calculated to examine the influences of the Co atoms on the optical properties. Results show that for the Co-doped materials, the absorption peaks in the high wavelength region are not as sharp and distinct as the undoped materials, and the absorption ranges are extended to even higher wavelength region.

  3. Study and development of new CdTe and CdZnTe detection structures for X and {gamma} imagery; Etude et realisation de nouvelles structures de detection a base de CdTe et CdZnTe pour l`imagerie X et {gamma}

    Energy Technology Data Exchange (ETDEWEB)

    Rosaz, M

    1997-10-24

    The aim of this study is to show the interest of applying cadmium telluride (CdTe) for X- and {gamma}- ray imaging applications, with specific technological (via contact nature) and geometric (via Frisch grids) structures suited for each application. This work is divided into three different but complementary parts: the first part describes a simulation model which allows a better understanding of CdTe based {gamma}- ray detectors. The new feature of this model compared to previous ones, is that it is able to take into account the electric field`s non uniform spatial distribution inside the detector s. The results enable us to de-convolute the influence of material and contact parameters on the spectrometric performances (energy resolution and peak/valley ratio) of CdTe based detectors; the second part presents different technological structures deposited upon CdTe, (grown by two different methods, i.e Bridgman and High Pressure Bridgman). These structures were characterised in X- and {gamma}- ray detection; theoretical models are developed which allow a certain insight into the detection properties of each couple (material + contact); the third part deals with new contact geometries which allow a screening effect of the bulk (analogous to the Frisch grid effect in gaseous detectors) resulting in improved energy resolution and peak/valley ratios; encouraging first results on prototypes are presented and discussed. This work has allowed a better understanding of physical behaviour of CdTe based detectors, coupled with advances in technological issues to upgrade the overall performances of these detectors for application in X- and {gamma}- ray imaging. (author) 93 refs.

  4. Optical properties of Cd{sub 0.9}Zn{sub 0.1}Te studied by variable angle spectroscopic ellipsometry between 0.75 and 6.24 eV

    Energy Technology Data Exchange (ETDEWEB)

    Yao, H.W.; Erickson, J.C. [Univ. of Nebraska, Lincoln, NE (United States)]|[Sandia National Labs., Livermore, CA (United States); Barber, H.B. [Univ. of Arizona, Tucson, AZ (United States); James, R.B.; Hermon, H. [Sandia National Labs., Livermore, CA (United States)

    1999-06-01

    Cadmium zinc telluride (CZT) is a leading technological material for room-temperature gamma-ray and x-ray detectors. Optical properties of Cd{sub 0.9}Zn{sub 0.1}Te (CZT) were studied by variable angle spectroscopic ellipsometry (VASE). Measurements made by VASE were performed on CZT and CdTe samples in air at room temperature at multiple angles of incidence. A parametric function model was employed in the VASE analysis to determine the dielectric functions {epsilon} = {epsilon}{sub 1} + i{epsilon}{sub 2} in the range of 0.75 to 6.24 eV. A two-oscillator analytical model was used to describe the dielectric response of native oxides on CZT. Surface oxide optical properties and thickness on CZT were also determined in conjunction with the VASE measurement and analysis of a CdTe sample. Two samples of CZT of different oxide thicknesses were measured and their optical constants were coupled together in a multiple-sample, multiple-model VASE analysis to resolve correlations between fitting parameters. Effective medium approximation was used to describe the optical properties of the CZT oxide with roughness. A Kramers-Kronig self-consistency check of the real and imaginary parts of the Cd{sub 0.9}Zn{sub 0.1}Te dielectric functions was performed over the energy range 0.75 to 6.24 eV. A five-Lorentz-oscillator model was employed to describe the dielectric response of CZT in the range of 1.6 to 6.24 eV. Intensity transmission measurements were made on the Cd{sub 0.9}Zn{sub 0.1}Te and CdTe, showing the absorption energy band edges of {approximately}1.58 and 1.46 eV, respectively.

  5. Antiferromagnetic spin ordering and interlayer magnetic correlations in MnTe/CdTe superlattices

    Science.gov (United States)

    Giebultowicz, T. M.; Faschinger, W.; Nunez, V.; Klosowski, P.; Bauer, G.; Sitter, H.; Furdyna, J. K.

    1994-04-01

    Results of neutron scattering studies on MnTe/CdTe superlattices with ultrathin non-magnetic CdTe "barriers" are presented and compared with data from earlier studies on MnSe/ZnSe, MnTe/ZnTe, and MnSe/ZnTe multilayers with thick non-magnetic spacers. The experiments revealed two qualitatively new effects—namely, (i) the existence of pronounced interlayer magnetic correlations in the case of the CdTe thickness corresponding to two single monolayers and (ii) the coexistence of two magnetic phases that never occurred simultaneously in the previously studied systems.

  6. Studies on the deep-level defects in CdZnTe crystals grown by travelling heater method

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, Boru; Jie, Wanqi; Wang, Tao; Xu, Lingyan; Yang, Fan; Yin, Liying; Fu, Xu [State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi' an (China); Key Laboratory of Radiation Detection Materials and Devices, Ministry of Industry and Information Technology, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi' an, Shaanxi (China); Nan, Ruihua [State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi' an (China); Shaanxi Key Laboratory of Optoelectronic Functional Materials and Devices, School of Materials and Chemical Engineering, Xi' an Technological University, Xi' an (China)

    2017-05-15

    The variation of deep level defects along the axis of CZT:In ingots grown by Travelling Heater Method was investigated by the means of thermally stimulated current (TSC) spectra. Models for the reaction among different defects In, Te{sub i}, and V{sub Cd} were used to analyze the variation of deep level defects along the growth direction. It was found that the density of In dopant-related defects is lower in the tip, but those of Te antisites and Te interstitials are higher in the tip. The density of cadmium vacancy exhibits an initial increase followed by a decrease from the tip to tail of the ingot. In PL spectra, the intensities of (D{sub 0}, X), (DAP) and D{sub complex} peaks obviously increase from the tip to the tail, due to the increase of the density of In dopant-related defects (IN{sup +}{sub CD}), Cd vacancies, and impurities. The low concentration of net free holes was found by Hall measurements, and high resistivity with p-type conduction was demonstrated from I-V analysis. The mobility for electrons was found to increase significantly from 634 ± 26 cm{sup 2} V{sup -1} s{sup -1} in the tip to 860 ± 10 cm{sup 2} V{sup -1} s{sup -1} in the tail, due to the decrease of the deep level defect densities. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  7. Performance simulation of an x-ray detector for spectral CT with combined Si and Cd[Zn]Te detection layers.

    Science.gov (United States)

    Herrmann, Christoph; Engel, Klaus-Jürgen; Wiegert, Jens

    2010-12-21

    The most obvious problem in obtaining spectral information with energy-resolving photon counting detectors in clinical computed tomography (CT) is the huge x-ray flux present in conventional CT systems. At high tube voltages (e.g. 140 kVp), despite the beam shaper, this flux can be close to 10⁹ Mcps mm⁻² in the direct beam or in regions behind the object, which are close to the direct beam. Without accepting the drawbacks of truncated reconstruction, i.e. estimating missing direct-beam projection data, a photon-counting energy-resolving detector has to be able to deal with such high count rates. Sub-structuring pixels into sub-pixels is not enough to reduce the count rate per pixel to values that today's direct converting Cd[Zn]Te material can cope with (≤ 10 Mcps in an optimistic view). Below 300 µm pixel pitch, x-ray cross-talk (Compton scatter and K-escape) and the effect of charge diffusion between pixels are problematic. By organising the detector in several different layers, the count rate can be further reduced. However this alone does not limit the count rates to the required level, since the high stopping power of the material becomes a disadvantage in the layered approach: a simple absorption calculation for 300 µm pixel pitch shows that the required layer thickness of below 10 Mcps/pixel for the top layers in the direct beam is significantly below 100 µm. In a horizontal multi-layer detector, such thin layers are very difficult to manufacture due to the brittleness of Cd[Zn]Te. In a vertical configuration (also called edge-on illumination (Ludqvist et al 2001 IEEE Trans. Nucl. Sci. 48 1530-6, Roessl et al 2008 IEEE NSS-MIC-RTSD 2008, Conf. Rec. Talk NM2-3)), bonding of the readout electronics (with pixel pitches below 100 µm) is not straightforward although it has already been done successfully (Pellegrini et al 2004 IEEE NSS MIC 2004 pp 2104-9). Obviously, for the top detector layers, materials with lower stopping power would be advantageous

  8. Water-soluble, luminescent ZnTe quantum dots: supersaturation-controlled synthesis and self-assembly into nanoballs, nanonecklaces and nanowires.

    Science.gov (United States)

    Patra, Sovan Kumar; Bhushan, Bhavya; Priyam, Amiya

    2016-03-07

    A supersaturation-controlled aqueous synthesis route has been developed for ZnTe quantum dots (QDs) with high monodispersity, size tunability, stability, band-edge luminescence (full-width at half-maximum (FWHM) 10-12 nm) and negligibly small Stokes' shift (2-4 nm). The degree of supersaturation of the initial reaction mixture was varied by increasing the reagent concentration, but keeping the molar ratio Zn(2+) : thioglycolic acid : Te(2-) constant at 1 : 2.5 : 0.5. For a 10× increase in supersaturation, the photoluminescence (PL) peak underwent a 50 nm blue shift from 330 to 280 nm at pH 6. The effect was more pronounced at pH 12, where the PL peak blue-shifted by 100 nm from 327 to 227 nm. Concomitantly, the FWHM was also reduced to a low value of 10 nm, indicating high monodispersity. For a 10× change in supersaturation, the particle size decreased by 63% (from 2.2 to 0.8 nm) at pH 12, whereas it changed by 19% (from 2.1 to 1.7 nm) at pH 6. High-resolution transmission electron microscopy and selected area electron diffraction data further revealed that the QDs synthesized at higher supersaturation had a better crystallinity. These QDs exhibited the unique property of undergoing isotropic and anisotropic self-assembly, which resulted in a blue shift and a red shift in the absorption and PL spectra, respectively. Isotropic assembly into spherical nanoballs (100 nm diameter, 1 nm inter-QD separation) occurred when the QDs were stored at pH 12 for 3 weeks at room temperature. The nanoballs further self-assembled into a 'pearl necklace' arrangement. On the partial removal of the capping agents, the QDs self-organized anisotropically into nanowires (1.3 μm long and 4.6 nm in diameter). The self-assembled nanostructures showed exciton-exciton coupling and excellent PL properties, which may be useful in enhanced optoelectronics, photovoltaics and biochemical sensing.

  9. Nd3+-doped TeO2-Bi2O3-ZnO transparent glass ceramics for laser application at 1.06 μm

    Science.gov (United States)

    Hu, Xiaolin; Luo, Zhiwei; Liu, Taoyong; Lu, Anxian

    2017-04-01

    The high crystallinity transparent glass ceramics based on Nd3+-doped 70TeO2-15Bi2O3-15ZnO (TBZ) compositions were successfully prepared by two-step heat treatment process. The effects of Nd2O3 content on the thermal, structural, mechanical, and optical properties of TBZ glass ceramics were studied. The incorporation of Nd2O3 enhanced the crystallization tendency in the matrix glass composition. The crystal phase and morphology of Bi2Te4O11 in the glass ceramics were confirmed by X-ray diffraction and field emission scanning electron microscopy. Due to precipitate more crystal phase, the hardness values increased from 3.21 to 3.66 GPa. Eight absorption peaks were observed from 400 to 900 nm and three emission bands appeared in the range of 850-1400 nm. With the increasing of Nd2O3 content from 0.5 to 2.5 wt%, the intensity of absorption peaks enhanced and the emission intensity increased up to 1.0 wt% and then fell down for further dopant concentration. The fluorescence decay lifetime decreased rapidly starting from 1.5 wt% Nd2O3 content due to the obvious energy migration among Nd3+. According to the extreme strong emission band around 1062 nm and the optimum Nd2O3 content (1.0 wt%), N10 glass ceramic was considered as a potential material for 1.06 μm laser applications.

  10. Optical properties of Cd{sub 0.9}Zn{sub 0.1}Te studied by variable angle spectroscopic ellipsometry between 0.75 and 6.24 eV

    Energy Technology Data Exchange (ETDEWEB)

    Ralph B. James

    2000-01-07

    Optical properties of Cd{sub 0.9}Zn{sub 0.1}Te (CZT) were studied by variable angle spectroscopic ellipsometry (VASE). Measurements made by VASE were performed on CZT and CdTe samples in air at room temperature at multiple angles of incidence. A parametric function model was employed in the VASE analysis to determine the dielectric functions {var_epsilon}={var_epsilon}{sub 1} + i{var_epsilon}{sub 2} in the range of 0.75 to 6.24 eV. A two-oscillator analytical model was used to describe the dielectric response of native oxides on CZT. Surface oxide optical properties and thickness on CZT were also determined in conjunction with the VASE measurement and analysis of a CdTe sample. Two samples of CZT of different oxide thicknesses were measured and their optical constants were coupled together in a multiple-sample, multiple-model VASE analysis to resolve correlations between fitting parameters. Effective medium approximation (EMA) was used to describe the optical properties of the CZT oxide with roughness. A Kramers-Kronig self-consistency check of the real and imaginary parts of the Cd{sub 0.9}Zn{sub 0.1} dielectric functions was performed over the energy range 0.75 to 6.24 eV. A five-Lorentz-oscillator model was employed to describe the dielectric response of CZT in the range of 1.6 to 6.24 eV. Intensity transmission measurements were made on the Cd{sub 0.9}Zn{sub 0.1}Te and CdTe, showing the absorption energy band edges of {approximately} 1.58 and 1.46 eV, respectively.

  11. Benchmark Assessment of Density Functional Methods on Group II-VI MX (M = Zn, Cd; X = S, Se, Te) Quantum Dots.

    Science.gov (United States)

    Azpiroz, Jon M; Ugalde, Jesus M; Infante, Ivan

    2014-01-14

    In this work, we build a benchmark data set of geometrical parameters, vibrational normal modes, and low-lying excitation energies for MX quantum dots, with M = Cd, Zn, and X = S, Se, Te. The reference database has been constructed by ab initio resolution-of-identity second-order approximate coupled cluster RI-CC2/def2-TZVPP calculations on (MX)6 model molecules in the wurtzite structure. We have tested 26 exchange-correlation density functionals, ranging from local generalized gradient approximation (GGA) and hybrid GGA to meta-GGA, meta-hybrid, and long-range corrected. The best overall functional is the hybrid PBE0 that outperforms all other functionals, especially for excited state energies, which are of particular relevance for the systems studied here. Among the DFT methodologies with no Hartree-Fock exchange, the M06-L is the best one. Local GGA functionals usually provide satisfactory results for geometrical structures and vibrational frequencies but perform rather poorly for excitation energies. Regarding the CdSe cluster, we also present a test of several basis sets that include relativistic effects via effective core potentials (ECPs) or via the ZORA approximation. The best basis sets in terms of computational efficiency and accuracy are the SBKJC and def2-SV(P). The LANL2DZ basis set, commonly employed nowadays on these types of nanoclusters, performs very disappointingly. Finally, we also provide some suggestions on how to perform calculations on larger systems keeping a balance between computational load and accuracy.

  12. T(z) diagram and magnetic behavior of the Zn{sub 1-z}Mn{sub z}In{sub 2}Te{sub 4} alloy system

    Energy Technology Data Exchange (ETDEWEB)

    Morocoima, M.; Pineda, F. [Centro de Estudios de Semiconductores, Departamento de Fisica, Facultad de Ciencias, Universidad de los Andes, Merida 5101 (Venezuela, Bolivarian Republic of); Quintero, M., E-mail: mquinter@ula.v [Centro de Estudios de Semiconductores, Departamento de Fisica, Facultad de Ciencias, Universidad de los Andes, Merida 5101 (Venezuela, Bolivarian Republic of); Quintero, E.; Moreno, E.; Grima, P.; Tovar, R.; Bocaranda, P. [Centro de Estudios de Semiconductores, Departamento de Fisica, Facultad de Ciencias, Universidad de los Andes, Merida 5101 (Venezuela, Bolivarian Republic of); Henao, J.A. [Grupo de Investigacion en Quimica Estructural (GIQUE), Facultad de Ciencias, Escuela de Quimica, Universidad Industrial de Santander, Apartado aereo 678, Bucaramanga (Colombia)

    2009-06-01

    Measurements of X-ray diffraction, differential thermal analysis (DTA) and of magnetic susceptibility chi, in the temperature range from 2 to 300 K, were carried out on polycrystalline samples of the Zn{sub 1-z}Mn{sub z}In{sub 2}Te{sub 4} alloy system. The X-ray diffraction patterns were used to check the equilibrium conditions and to estimate crystalline parameter values. The DTA transition temperature values were plotted as a function of alloy composition z. The 1/chi vs T curves indicated that samples in the alpha{sub 1}I4-bar range (0

  13. Photostable water-dispersible NIR-emitting CdTe/CdS/ZnS core-shell-shell quantum dots for high-resolution tumor targeting.

    Science.gov (United States)

    Wang, Jie; Lu, Yimei; Peng, Fei; Zhong, Yiling; Zhou, Yanfeng; Jiang, Xiangxu; Su, Yuanyuan; He, Yao

    2013-12-01

    Near-infrared (NIR, 700-900 nm) fluorescent quantum dots are highly promising as NIR bioprobes for high-resolution and high-sensitivity bioimaging applications. In this article, we present a class of NIR-emitting CdTe/CdS/ZnS core-shell-shell quantum dots (QDs), which are directly prepared in aqueous phase via a facile microwave synthesis. Significantly, the prepared NIR-emitting QDs possess excellent aqueous dispersibility, strong photoluminescence, favorable biocompatibility, robust storage-, chemical-, and photo-stability, and finely tunable emission in the NIR range (700-800 nm). The QDs are readily functionalized with antibodies for use in immunofluorescent bioimaging, yielding highly spectrally and spatially resolved emission for in vitro and in vivo imaging. In comparison to the large size of 15-30 nm of the conventional NIR QDs, the extremely small size (≈ 4.2 nm or 7.5 nm measured by TEM or DLS, respectively) of our QDs offers great opportunities for high-efficiency and high-sensitivity targeted imaging in cells and animals.

  14. Use of the drift-time method to measure the electron lifetime in long-drift-length CdZnTe detectors

    Science.gov (United States)

    Bolotnikov, A. E.; Camarda, G. S.; Chen, E.; Gul, R.; Dedic, V.; De Geronimo, G.; Fried, J.; Hossain, A.; MacKenzie, J. M.; Ocampo, L.; Sellin, P.; Taherion, S.; Vernon, E.; Yang, G.; El-Hanany, U.; James, R. B.

    2016-09-01

    The traditional method for electron lifetime measurements of CdZnTe (CZT) detectors relies on using the Hecht equation. The procedure involves measuring the dependence of the detector response on the applied bias to evaluate the μτ product, which in turn can be converted into the carrier lifetime. Despite general acceptance of this technique, which is very convenient for comparative testing of different CZT materials, the assumption of a constant electric field inside a detector is unjustified. In the Hecht equation, this assumption means that the drift time would be a linear function of the distance. This condition is not fulfilled in practice at low applied biases, where the Hecht equation is most sensitive to the μτ product. As a result, researchers usually take measurements at relatively high biases, which work well in the case of the low μτ-product material, grade CZT detectors produced by the Redlen Technologies. We found that the electron μτ product of tested crystals is in the range 0.1-0.2 cm2/V, which is an order of the magnitude higher than any value previously reported for a CZT material. In comparison, using the Hecht equation fitting, we obtained μτ = 2.3 × 10-2 cm2/V for a 2-mm thin planar detector fabricated from the same CZT material.

  15. Description of vibrational properties of random alloy ZnTe{sub 1-x}Se{sub x} within the percolation model

    Energy Technology Data Exchange (ETDEWEB)

    Souhabi, Jihane; Chafi, Allal; Kassem, Mohammed; Nassour, Ayoub; Gleize, Jerome; Postnikov, A.V.; Hugel, J.; Pages, Olivier [Laboratoire de Physique des Milieux Denses, Universite Paul Verlaine - Metz, 1 Bd Arago, 57070 Metz (France)

    2009-05-15

    We discuss the classification of the phonon type behavior of semiconductor alloys as apparent in the Raman and infrared spectra, i.e. in terms of types (i) 1-bond{yields}1-mode and (ii) 2-bond{yields}1-mode (both covered by the Modified Random Element Isodisplacement model, operating at the macroscopic scale), and also (iii) the modified 2-mode type (exceptional), in the framework of the recent 1-bond{yields}2-mode percolation model based on a description of the alloy disorder at the mesoscopic scale. The leading systems of types (i) and (iii), i.e., InGaAs and InGaP, respectively, were earlier shown to obey the percolation model. The aim of this work is to investigate whether the percolation model further extends to the leading system of the last type (ii), i.e. ZnTeSe. With this end in view, we perform a careful re-examination of the Raman and infrared spectra of this alloy, as available in the literature. Special attention is awarded to the discussion and modeling of the puzzling multi-mode infrared reflectivity spectra. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  16. Characterization of Cd{sub 0.9}Zn{sub 0.1}Te based virtual Frisch grid detectors for high energy gamma ray detection

    Energy Technology Data Exchange (ETDEWEB)

    Krishna, R.M.; Chaudhuri, S.K.; Zavalla, K.J. [Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208 (United States); Mandal, K.C., E-mail: mandalk@cec.sc.edu [Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208 (United States)

    2013-02-11

    Detector grade CZT single crystals have been grown from zone refined Cd, Zn, and